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Sample records for leakage current characteristics

  1. Leakage Current Characteristics of Pre-flashover Along Ice-covered Insulator String%Leakage Current Characteristics of Pre-flashover Along Ice-covered Insulator String

    Institute of Scientific and Technical Information of China (English)

    LI Zhou; ZHANG Qiao-gen; LIU Feng-lian; JIA Hui-dong; XI Hai-bo

    2011-01-01

    Flashover of ice-covered in power grid. As leakage current suspension insulator string is one of the is one of the important characteristics to major problems for the transmission lines predict the flashover of suspension insulator string, measuring method and analysis of the leakage current are developed for ice-covered XWP2-160 porcelain suspension insulator string in this paper. The waveform of the leakage current is perfectly recorded from the occurrence of micro-discharge to flashover, in which the process can be divided into four periods according to the evolution of the leakage current. There are different rising rates of the leakage current and various phenomena of arc discharge in different periods with the increase of the applied voltage, and the distortion on the leakage current waveform is detected because of the effect of arc discharge. A characteristic current (Iw)and a critical current (IFT)of flashover, two important parameters of the leakage current before ice-covered insulator string flashover, are defined for analysis of the leakage current characteristics of pre-flashover along the polluted insulator string covered with ice. Statistical experimental results show that the average values of Iw and IFT are within the major distribution zones, and both currents can be used for predicting the icing flashover. The values of two important leakage currents are approximately constant at different contamination degrees, while the direct relationships between the critical currents and the contamination degrees are not found in this paper.

  2. Leakage-current properties of encapsulants

    Science.gov (United States)

    Wen, L. C.

    A theoretical modeling of leakage current in ethylene vinyl acetate (EVA) and polyvinyl butyral (PVB) modules is being developed and is described. The modeling effort derives mathematical relationships for the bulk and surface conductivites of EVA and PVB, the surface conductivities of glass and polymeric films, and the EVA and PVB pottants, all as functions of environmental parameters. Results from the modeling indicate that for glass/EVA, the glass surface controls the interfacial conductivity, although EVA bulk conductivity controls total leakage current. For PVB/glass, the interface conductivity controls leakage currents for relative humidity (RH) less than 40 to 50%, but PVB bulk conductivity controls leakage current above 50% RH.

  3. Leakage Current Waveforms and Arcing Characteristics of Epoxy Resin for Outdoor Insulators under Clean and Salt Fogs

    Directory of Open Access Journals (Sweden)

    Suwarno

    2008-05-01

    Full Text Available Ceramic outdoor insulators have been used in high voltage transmission lines since long time ago. Due to superiority in their resistance to pollution, recently, polymeric outdoor insulators are widely used. Epoxy resin is one polymer which shows good properties for outdoor insulation. During service, outdoor insulators may severe a certain degree of pollution which may reduce their surface resistance. Leakage current (LC usually increase and degradation may take place. This paper reports experimental results on the leakage current waveforms and arcing characteristics of epoxy resin under clean and salt fog. The samples used are blocks of epoxy resin with dimension of 250 x 50 x 20 mm3. The samples were put in a test chamber with dimension of 900x900x1200 mm3 with controllable humidity and pollution conditions. Clean and salt fog were generated according to IEC 60-1 and 507. The arcing experiment was done with incline plane test in accordance with IEC 587. AC voltage in the range from 5 kV to 50 kV with frequency of 50 Hz was applied. The LC waveforms up to flash over were measured. The magnitudes as well as harmonic content of the LC were analyzed. The correlation between LC waveforms and dry band arching phenomenon was elaborated. Visual observation of the arc on the sample surfaces was observed using a video camera. Experimental results indicated that LC magnitude on clean samples was slightly affected by humidity (RH. However, under salt fog, RH greatly affected the LC magnitude. The flashover voltage of clean samples under salt fog reduced significantly for fog conductivity of more than 1.2 mS/cm. Kaolin-polluted samples under salt fog showed an Ohmic behaviour. The LC magnitude was high and a large discrepancy of LC magnitude was observed for high applied voltage of larger than 25 kV. The largest LC magnitude was observed on salt-kaolin polluted samples under clean fog at high RH. LC waveforms analysis indicated that in general LC waveforms

  4. Leakage current measurement in transformerless PV inverters

    DEFF Research Database (Denmark)

    Kerekes, Tamas; Sera, Dezso; Mathe, Laszlo

    2012-01-01

    to be used in commercial PV inverters for the measurement of leakage and fault ground currents. The German VDE0126–1–1 standard gives the limit for fault and leakage ground currents and all grid connected PV inverters have to comply with these limits and disconnect from the grid in case of a fault.......Photovoltaic (PV) installations have seen a huge increase during the last couple of years. Transformerless PV inverters are gaining more share of the total inverter market, due to their high conversion efficiency, small weight and size. Nevertheless safety should have an important role in case...... of these tranformerless systems, due to the missing galvanic isolation. Leakage and fault current measurement is a key issue for these inverter topologies to be able to comply with the required safety standards. This article presents the test results of two different current measurement sensors that were suggested...

  5. Leakage Current Estimation of CMOS Circuit with Stack Effect

    Institute of Scientific and Technical Information of China (English)

    Yong-Jun Xu; Zu-Ying Luo; Xiao-Wei Li; Li-Jian Li; Xian-Long Hong

    2004-01-01

    Leakage current of CMOS circuit increases dramatically with the technology scaling down and has become a critical issue of high performance system. Subthreshold, gate and reverse biased junction band-to-band tunneling (BTBT) leakages are considered three main determinants of total leakage current. Up to now, how to accurately estimate leakage current of large-scale circuits within endurable time remains unsolved, even though accurate leakage models have been widely discussed. In this paper, the authors first dip into the stack effect of CMOS technology and propose a new simple gate-level leakage current model. Then, a table-lookup based total leakage current simulator is built up according to the model. To validate the simulator, accurate leakage current is simulated at circuit level using popular simulator HSPICE for comparison. Some further studies such as maximum leakage current estimation, minimum leakage current generation and a high-level average leakage current macromodel are introduced in detail. Experiments on ISCAS85 and ISCAS89 benchmarks demonstrate that the two proposed leakage current estimation methods are very accurate and efficient.

  6. Automatic parameter extraction technique for gate leakage current modeling in double gate MOSFET

    Science.gov (United States)

    Darbandy, Ghader; Gneiting, Thomas; Alius, Heidrun; Alvarado, Joaquín; Cerdeira, Antonio; Iñiguez, Benjamin

    2013-11-01

    Direct Tunneling (DT) and Trap Assisted Tunneling (TAT) gate leakage current parameters have been extracted and verified considering automatic parameter extraction approach. The industry standard package IC-CAP is used to extract our leakage current model parameters. The model is coded in Verilog-A and the comparison between the model and measured data allows to obtain the model parameter values and parameters correlations/relations. The model and parameter extraction techniques have been used to study the impact of parameters in the gate leakage current based on the extracted parameter values. It is shown that the gate leakage current depends on the interfacial barrier height more strongly than the barrier height of the dielectric layer. There is almost the same scenario with respect to the carrier effective masses into the interfacial layer and the dielectric layer. The comparison between the simulated results and available measured gate leakage current transistor characteristics of Trigate MOSFETs shows good agreement.

  7. Radio frequency leakage current from unipolar laparoscopic electrocoagulators.

    Science.gov (United States)

    DiNovo, J A

    1983-09-01

    Radio frequency (RF) leakage current has been suspected of causing accidental tissue burns associated with laparoscopic electrocoagulation used for tubal sterilization. A study was done to determine the levels of capacitively coupled RF leakage current from six unipolar laparoscopes manufactured by five companies. Leakage current values ranging from less than 100 mA to over 550 mA were measured at electrosurgical unit power settings of up to 150 w into 1,000 ohms. These levels represent 24-62% of the total electrosurgical current generated by the electrosurgical units. Using a criterion for tissue injury of 100 mA/sq cm applied for ten seconds, leakage current levels exceeding 400 mA are capable of producing burns either at the abdominal wall or to internal organs that accidentally come into contact with the body of the laparoscope. One of the six devices tested had leakage current levels higher than 400 mA at power settings lower than 100 w. Capacitance measurements between the unipolar laparoscope body and the forceps ranged from 53 to 140 picofarads.

  8. Relating Agulhas leakage to the Agulhas Current retroflection location

    NARCIS (Netherlands)

    van Sebille, E.|info:eu-repo/dai/nl/304831921; Barron, N.; Biastoch, A.; van Leeuwen, P.J.|info:eu-repo/dai/nl/102655758; Vossepoel, F.; de Ruijter, W.P.M.|info:eu-repo/dai/nl/068476760

    2009-01-01

    The relation between the Agulhas Current retroflection location and the magnitude of Agulhas leakage, the transport of water from the Indian to the Atlantic Ocean, is investigated in a high-resolution numerical ocean model. Sudden eastward retreats of the Agulhas Current retroflection loop are

  9. Leakage Currents and Gas Generation in Advanced Wet Tantalum Capacitors

    Science.gov (United States)

    Teverovsky, Alexander

    2015-01-01

    Currently, military grade, established reliability wet tantalum capacitors are among the most reliable parts used for space applications. This has been achieved over the years by extensive testing and improvements in design and materials. However, a rapid insertion of new types of advanced, high volumetric efficiency capacitors in space systems without proper testing and analysis of degradation mechanisms might increase risks of failures. The specifics of leakage currents in wet electrolytic capacitors is that the conduction process is associated with electrolysis of electrolyte and gas generation resulting in building up of internal gas pressure in the parts. The risk associated with excessive leakage currents and increased pressure is greater for high value advanced wet tantalum capacitors, but it has not been properly evaluated yet. In this work, in Part I, leakages currents in various types of tantalum capacitors have been analyzed in a wide range of voltages, temperatures, and time under bias. Gas generation and the level of internal pressure have been calculated in Part II for different case sizes and different hermeticity leak rates to assess maximal allowable leakage currents. Effects related to electrolyte penetration to the glass seal area have been studied and the possibility of failures analyzed in Part III. Recommendations for screening and qualification to reduce risks of failures have been suggested.

  10. Parametrization of the radiation induced leakage current increase of NMOS transistors

    Science.gov (United States)

    Backhaus, M.

    2017-01-01

    The increase of the leakage current of NMOS transistors during exposure to ionizing radiation is known and well studied. Radiation hardness by design techniques have been developed to mitigate this effect and have been successfully used. More recent developments in smaller feature size technologies do not make use of these techniques due to their drawbacks in terms of logic density and requirement of dedicated libraries. During operation the resulting increase of the supply current is a serious challenge and needs to be considered during the system design. A simple parametrization of the leakage current of NMOS transistors as a function of total ionizing dose is presented. The parametrization uses a transistor transfer characteristics of the parasitic transistor along the shallow trench isolation to describe the leakage current of the nominal transistor. Together with a parametrization of the number of positive charges trapped in the silicon dioxide and number of activated interface traps in the silicon to silicon dioxide interface the leakage current results as a function of the exposure time to ionizing radiation. This function is fitted to data of the leakage current of single transistors as well as to data of the supply current of full ASICs.

  11. Parametrization of the radiation induced leakage current increase of NMOS transistors

    CERN Document Server

    Backhaus, Malte

    2016-01-01

    The increase of the leakage current of NMOS transistors during exposure to ionizing radiation is known and well studied. Radiation hardness by design techniques have been developed to mitigate this effect and have been successfully used. More recent developments in smaller feature size technologies do not make use of these techniques due to their drawbacks in terms of logic density and requirement of dedicated libraries. During operation the resulting increase of the supply current is a serious challenge and needs to be considered during the system design. A simple parametrization of the leakage current of NMOS transistors as a function of total ionizing dose is presented. The parametrization uses a transistor transfer characteristics of the parasitic transistor along the shallow trench isolation to describe the leakage current of the nominal transistor. Together with a parametrization of the number of positive charges trapped in the silicon dioxide and number of activated interface traps in the silicon to si...

  12. Leakage Current Simulation of Insulating Thin Film Irradiated by a Nonpenetrating Electron Beam

    Institute of Scientific and Technical Information of China (English)

    ZHANG Hai-Bo; LI Wei-Qin; CAO Meng

    2012-01-01

    We perform numerical simulations of the leakage current characteristics of an insulating thin film of SiO2 negatively charged by a low-energy nonpenetrating focused electron beam. For the formation of leakage current, electrons are demonstrated to turn from diffusion to drift after clearing the minimum potential barrier due to electron-hole separation. In the equilibrium state, the leakage current increases approximately linearly with the increasing primary beam current and energy. It also increases with the increasing film thickness and trap density, and with the decreasing electron mobility, in which the film thickness has a greater influence. Validated by some existing experiments, the simulation results provide a new perspective for the negative charging effects of insulating samples due to the low-energy focused electron beam.%We perform numerical simulations of the leakage current characteristics of an insulating thin film of SiO2 negatively charged by a low-energy nonpenetrating focused electron beam.For the formation of leakage current,electrons are demonstrated to turn from diffusion to drift after clearing the minimum potential barrier due to electron-hole separation.In the equilibrium state,the leakage current increases approximately linearly with the increasing primary beam current and energy.It also increases with the increasing film thickness and trap density,and with the decreasing electron mobility,in which the film thickness has a greater influence.Validated by some existing experiments,the simulation results provide a new perspective for the negative charging effects of insulating samples due to the low-energy focused electron beam.

  13. Evaluation of Leakage Current Measurement for Site Pollution Severity Assessment

    Directory of Open Access Journals (Sweden)

    Mohammad Ali Shercat MASOUM

    2007-01-01

    Full Text Available Flashover of insulators in transmission and distribution systems may cause costly outages for power companies and their customers. Industrial and/or coastal pollution of external insulation is a major cause for such events at the normal power frequency voltage of the systems. The power companies are now facing increasing competition resulting in pressure to lower the cost and to increase the system reliability. Different methods have been applied in the past to overcome or reduce the problems with flashover on insulators. Methods which should provide reliable data under real physical conditions. In this paper several measuring methods to evaluate the pollution levels on outdoor insulators are described. According to this comparison, Leakage Current Measurement ‘LCM’ method is a reliable method for measurement leakage current in outdoor insulators and surge arresters.

  14. Local leakage current behaviours of BiFeO3 films

    Institute of Scientific and Technical Information of China (English)

    Zou Cheng; Chen Bin; Zhu Xiao-Jian; Zuo Zheng-Hu; Liu Yi-Wei; Chen Yuan-Fu; Zhan Qing-Feng; Li Run-Wei

    2011-01-01

    The leakage current behaviours of polycrystalline BiFeO3 thin films are investigated by using both conductive atomic force microscopy and current-voltage characteristic measurements.The local charge transport pathways are found to be located mainly at the grain boundaries of the films.The leakage current density can be tuned by changing the post-annealing temperature,the annealing time,the bias voltage and the light illumination,which can be used to improve the performances of the ferroelectric devices based on the BiFeO3 films.A possible leakage mechanism is proposed to interpret the charge transports in the polycrystalline BiFeO3 films.

  15. Current leakage performance of dielectric elastomers under different boundary conditions

    Science.gov (United States)

    Lu, Tongqing; Shi, Zhibao; Chen, Zhiqiang; Huang, He; Wang, T. J.

    2015-10-01

    In the past decade, dielectric elastomers have become promising candidates in the applications of soft electromechanical transducers due to their outstanding properties of large deformation and high energy density. Current leakage of dielectric elastomer is one of the important dissipative mechanisms affecting the energy conversion efficiency. In this work, we experimentally investigate the current leakage performance of dielectric elastomers with different boundary conditions. We find that for displacement-type boundary conditions, the transition from Ohmic conduction to non-Ohmic conduction is abrupt near the critical electric field. By comparison, for force-type boundary conditions, the current leakage density versus electric field curve is smooth and is fit well by an exponential function. The equivalent resistivity of dielectric elastomers under force-type boundary conditions is approximately an order of magnitude smaller than that under displacement-type boundary conditions. The difference is qualitatively explained by a microscopic physical model. These results will help to design and optimize dielectric elastomer transducers to improve their energy conversion efficiency.

  16. Effects of Geometry on Leakage Flow Characteristics of Brush Seal

    Institute of Scientific and Technical Information of China (English)

    Yuan Wei; Zhaobo Chen∗; Yinghou Jiao

    2015-01-01

    In order to better application of brush seal in rotating machinery, the leakage flow characteristics of the brush seal considering geometry effects are numerically analyzed using Reynolds⁃Averaged Navier⁃Stokes ( RANS) model coupling with a non⁃Darcian porous medium model. The reliability of the present numerical method is proved, which is in agreement with the experimental and numerical results from literatures. Three different bristle pack thicknesses, fence heights and initial clearances under different pressure ratios, rotational velocities and other operating conditions are utilized to investigate the effects of geometry modification on the brush seal leakage flow behaviors. It discusses the effectiveness of various geometry configurations outlining important flow features. The results indicate that the increase of fence height and clearance would lead to the increase of leakage rate. But the leakage is not linearly with respect to the bristle pack thickness, and the effect of rotational velocity is not obvious. Moreover, the detailed leakage flow fields and pressure distributions along the rotor surface, free bristle height, and fence height of the brush seals are also presented. The static pressure drop amplitude through the bristle pack and the pressure rise amplitude through the cavity would increase while the pressure differential increases. And the axial pressure is the main reason of bristle blow down. The results provide theoretical support for the brush seal structure optimal design.

  17. Growth and Current Leakage Characteristics of SrHfON High-k Gate Dielectric Films%SrHfON高κ栅介质薄膜的漏电特性研究

    Institute of Scientific and Technical Information of China (English)

    王雪梅; 刘正堂; 冯丽萍

    2013-01-01

    采用射频反应磁控溅射法在p-Si(100)衬底上成功制备出SrHfON高k栅介质薄膜,并研究了Au/SrHfON/Si MOS电容的漏电流机制及应力感应漏电流(SILC)效应.结果表明,MOS电容的漏电流密度随N2流量的增加而减小.在正栅压下,漏电流主要由Schottky发射机制引起;在负栅压下,漏电流机制在低、中、高栅电场区时分别为Schottky发射、F-P发射和F-N隧穿机制.同时,Au/SrHfON/Si MOS电容表现出明显的SILC效应,经恒压应力后薄膜在正栅压下的漏电流由Schouky发射和F-P发射机制共同作用,且后者占主导地位.%The SrHfON high-κ gate dielectric films,deposited by RF reactive magnetron sputtering on p-type Si (100)substrates,were used to fabricate the Au/SrHfON/Si MOS capacitor.The impacts of the growth conditions on the leakage current density were evaluated with X-ray photoelectron spectroscopy and conventional proves.The leakage current conduction mechanisms and the stress induced leakage current(SILC) effect of the MOS capacitor were studied.The leakage current density of the MOS capacitor was found to decrease with an increase of N2 flow rate.At a positive bias of the metal gate,the leakage current mainly originated from Schottky emission,but at a negative bias,the leakage current in the low-,medium-and high-gate voltage ranges resulted from Schottky emission,Poole-Franel (F-P) emission and Fowler-Nord-heim (F-N) tunneling,respectively.In addition,the SILC effect was found to dominate the Au/SrHfON/Si MOS capacitor;but after being stressel by a constant voltage,Schottky emission outperforms F-P emission in generating the leakage current.

  18. Fluorine-plasma surface treatment for gate forward leakage current reduction in AlGaN/GaN HEMTs

    Institute of Scientific and Technical Information of China (English)

    Chen Wanjun; Zhang Jing; Zhang Bo; Chen Kevin Jing

    2013-01-01

    The gate forward leakage current in AlGaN/GaN high electron mobility transistors (HEMTs) is investigated.It is shown that the current which originated from the forward biased Schottky-gate contributed to the gate forward leakage current.Therefore,a fluorine-plasma surface treatment is presented to induce the negative ions into the AlGaN layer which results in a higher metal-semiconductor barrier.Consequently,the gate forward leakage current shrinks.Experimental results confirm that the gate forward leakage current is decreased by one order magnitude lower than that of HEMT device without plasma treatment.In addition,the DC characteristics of the HEMT device with plasma treatment have been studied.

  19. Modeling of leakage currents in high-k dielectrics

    Energy Technology Data Exchange (ETDEWEB)

    Jegert, Gunther Christian

    2012-03-15

    Leakage currents are one of the major bottlenecks impeding the downscaling efforts of the semiconductor industry. Two core devices of integrated circuits, the transistor and, especially, the DRAM storage capacitor, suffer from the increasing loss currents. In this perspective a fundamental understanding of the physical origin of these leakage currents is highly desirable. However, the complexity of the involved transport phenomena so far has prevented the development of microscopic models. Instead, the analysis of transport through the ultra-thin layers of high-permittivity (high-k) dielectrics, which are employed as insulating layers, was carried out at an empirical level using simple compact models. Unfortunately, these offer only limited insight into the physics involved on the microscale. In this context the present work was initialized in order to establish a framework of microscopic physical models that allow a fundamental description of the transport processes relevant in high-k thin films. A simulation tool that makes use of kinetic Monte Carlo techniques was developed for this purpose embedding the above models in an environment that allows qualitative and quantitative analyses of the electronic transport in such films. Existing continuum approaches, which tend to conceal the important physics behind phenomenological fitting parameters, were replaced by three-dimensional transport simulations at the level of single charge carriers. Spatially localized phenomena, such as percolation of charge carriers across pointlike defects, being subject to structural relaxation processes, or electrode roughness effects, could be investigated in this simulation scheme. Stepwise a self-consistent, closed transport model for the TiN/ZrO{sub 2} material system, which is of outmost importance for the semiconductor industry, was developed. Based on this model viable strategies for the optimization of TiN/ZrO{sub 2}/TiN capacitor structures were suggested and problem areas

  20. Simulation of leakage current measurement on medical devices using helmholtz coil configuration with different current flow

    Science.gov (United States)

    Sutanto, E.; Chandra, F.; Dinata, R.

    2017-05-01

    Leakage current measurement which can follow IEC standard for medical device is one of many challenges to be answered. The IEC 60601-1 has defined that the limit for a leakage current for Medical Device can be as low as 10 µA and as high as 500 µA, depending on which type of contact (applied part) connected to the patient. Most people are using ELCB (Earth-leakage circuit breaker) for safety purpose as this is the most common and available safety device in market. One type of ELCB devices is RCD (Residual Current Device) and this RCD type can measure the leakage current directly. This work will show the possibility on how Helmholtz Coil Configuration can be made to be like the RCD. The possibility is explored by comparing the magnetic field formula from each device, then it proceeds with a simulation using software EJS (Easy Java Simulation). The simulation will make sure the concept of magnetic field current cancellation follows the RCD concept. Finally, the possibility of increasing the measurement’s sensitivity is also analyzed. The sensitivity is needed to see the possibility on reaching the minimum leakage current limit defined by IEC, 0.01mA.

  1. Analysis of Leakage Current to Predict Insulator Flashover Using Artificial Neural Network

    Directory of Open Access Journals (Sweden)

    N. Narmadhai

    2011-01-01

    Full Text Available Problem statement: The phenomenon of flashover in polluted insulators has been continued by the study of the characteristics of contaminating layers deposited on the surface of insulators in high voltage laboratories. In the literature, Experimental investigations have been carried out on a real insulator or a flat plate model of insulators under high voltage application. This study proposed the Equivalent insulator flat plate model for studying the flashover phenomena due to pollution under wet conditions even at low voltage. Laboratory based tests were carried out on the model under AC voltage at different pollution levels. Different concentrations of salt solution has been prepared using sodium chloride, Kaolin and distilled water representing the various contaminations. Leakage current during the experimental studies were measured for various polluted conditions. Approach: A new model of Vc = f (V, Iinitial, Iem, Iemax and Iσ based on artificial neural network has been developed to predict flashover from the analysis of leakage current. The input variable to the artificial neural network are mean (Imean, Maximum(Imax and standard deviation(Iσ of leakage current extracted along with the initial value of leakage current Iinitial and the input voltage(V.The target obtained was used to evaluate the performance of the neural network model. Results: The optimum process has been carried out based on the training accuracy measured by RMSE, the network converged to a threshold of 0.0001.The trained model prediction is in good agreement with the actual results and the R2 value of the developed model is 0.99996. Conclusion: The developed ANN model is well-suited for the analysis of leakage current to predict flashover on the insulator surface with high accuracy.

  2. Enhancement-mode InAlN/GaN MISHEMT with low gate leakage current

    Institute of Scientific and Technical Information of China (English)

    Gu Guodong; Cai Yong; Feng Zhihong; Liu Bo; Zeng Chunhong; Yu Guohao; Dong Zhihua; Zhang Baoshun

    2012-01-01

    We report an enhancement-mode InAlN/GaN MISHEMT with a low gate leakage current by a thermal oxidation technique under gate.The off-state source-drain current density is as low as ~10-7 A/mm at VGs =0 V and VDS =5 V.The threshold voltage is measured to be +0.8 V by linear extrapolation from the transfer characteristics.The E-mode device exhibits a peak transconductance of 179 mS/mm at a gate bias of 3.4 V.A low reverse gate leakage current density of 4.9 × 10-7 A/mm is measured at VGS =-15 V.

  3. Analysis of leakage current in GaAs micro-solar cell arrays

    Institute of Scientific and Technical Information of China (English)

    2010-01-01

    The output characteristics of micro-solar cell arrays are analyzed on the basis of a modified model in which the shunt resistance between cell lines results in current leakage.The modification mainly consists of adding a shunt resistor network to the traditional model.The obtained results agree well with the reported experimental results.The calculation results demonstrate that leakage current in substrate affects seriously the performance of GaAs micro-solar cell arrays.The performance of arrays can be improved by reducing the number of cells per line.In addition,at a certain level of integration,an appropriate space occupancy rate of the single cell is recommended for ensuring high open circuit voltages,and it is more appropriate to set the rates at 80%-90% through the calculation.

  4. Effect of Compressive Stresses on Leakage Currents in Microchip Tantalum Capacitors

    Science.gov (United States)

    Teverovsky, Alexander

    2012-01-01

    Microchip tantalum capacitors are manufactured using new technologies that allow for production of small size capacitors (down to EIA case size 0402) with volumetric efficiency much greater than for regular chip capacitors. Due to a small size of the parts and leadless design they might be more sensitive to mechanical stresses that develop after soldering onto printed wiring boards (PWB) compared to standard chip capacitors. In this work, the effect of compressive stresses on leakage currents in capacitors has been investigated in the range of stresses up to 200 MPa. Significant, up to three orders of magnitude, variations of currents were observed after the stress exceeds a certain critical level that varied from 10 MPa to 180 MPa for capacitors used in this study. A stress-induced generation of electron traps in tantalum pentoxide dielectric is suggested to explain reversible variations of leakage currents in tantalum capacitors. Thermo-mechanical characteristics of microchip capacitors have been studied to estimate the level of stresses caused by assembly onto PWB and assess the risk of stress-related degradation and failures. Keywords: tantalum capacitors, leakage current, soldering, reliability, mechanical stress.

  5. Leakage current and stability of acrylic elastomer subjected to high DC voltage

    Science.gov (United States)

    Hammami, S.; Jean-Mistral, C.; Jomni, F.; Gallot-Lavallée, O.; Rain, P.; Yangui, B.; Sylvestre, A.

    2015-04-01

    Dielectric elastomers such as 3M VHB4910 acrylate film have been widely used for electromechanical energy conversion such as actuators, sensors and generators, due to their lightweight, high efficiency, low cost and high energy density. Mechanical and electric properties of such materials have been deeply investigated according to various parameters (temperature, frequency, pre-stress, nature of the compliant electrodes…). Models integrating analytic laws deduced from experiments increase their accuracy. Nevertheless, leakage current and electrical breakdown reduce the efficiency and the lifetime of devices made with these polymers. These two major phenomena are not deeply investigated in the literature. Thus, this paper describes the current-voltage characteristics of acrylate 3M VHB4910 and investigates the stability of the current under high electric field (kV) for various temperatures (from 20°C to 80°C) and over short (300 s) and long (12h) periods. Experimental results show that, with gold electrodes at ambient temperature, the current decreases with time to a stable value corresponding to the conduction current. This decrease occurs during 6 hours, whereas in the literature values of current at short time (less than 1 hour) are generally reported. This decrease can be explained by relaxations mechanisms in the polymer. Schottky emission and Poole-Frenkel emission are both evaluated to explain the leakage current. It emerges from this study that the Schottky effect constitutes the main mechanism of electric current in the 3M VHB4910. For high temperatures, the steady state is reached quickly. To end, first results on the leakage current changes for pre-stretch VHB4910 complete this study.

  6. Temperature-dependent analysis of conduction mechanism of leakage current in thermally grown oxide on 4H-SiC

    Energy Technology Data Exchange (ETDEWEB)

    Sometani, Mitsuru; Takei, Manabu [Advanced Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, 305-8568 Ibaraki (Japan); Fuji Electric Co. Ltd., 1 Fuji-machi, Hino, 191-8502 Tokyo (Japan); Okamoto, Dai; Harada, Shinsuke; Ishimori, Hitoshi; Takasu, Shinji; Hatakeyama, Tetsuo; Yonezawa, Yoshiyuki; Fukuda, Kenji; Okumura, Hajime [Advanced Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, 305-8568 Ibaraki (Japan)

    2015-01-14

    The conduction mechanism of the leakage current of a thermally grown oxide on 4H silicon carbide (4H-SiC) was investigated. The dominant carriers of the leakage current were found to be electrons by the carrier-separation current-voltage method. The current-voltage and capacitance-voltage characteristics, which were measured over a wide temperature range, revealed that the leakage current in SiO{sub 2}/4H-SiC on the Si-face can be explained as the sum of the Fowler-Nordheim (FN) tunneling and Poole-Frenkel (PF) emission leakage currents. A rigorous FN analysis provided the true barrier height for the SiO{sub 2}/4H-SiC interface. On the basis of Arrhenius plots of the PF current separated from the total leakage current, the existence of carbon-related defects and/or oxygen vacancy defects was suggested in thermally grown SiO{sub 2} films on the Si-face of 4H-SiC.

  7. Temperature-dependent analysis of conduction mechanism of leakage current in thermally grown oxide on 4H-SiC

    Science.gov (United States)

    Sometani, Mitsuru; Okamoto, Dai; Harada, Shinsuke; Ishimori, Hitoshi; Takasu, Shinji; Hatakeyama, Tetsuo; Takei, Manabu; Yonezawa, Yoshiyuki; Fukuda, Kenji; Okumura, Hajime

    2015-01-01

    The conduction mechanism of the leakage current of a thermally grown oxide on 4H silicon carbide (4H-SiC) was investigated. The dominant carriers of the leakage current were found to be electrons by the carrier-separation current-voltage method. The current-voltage and capacitance-voltage characteristics, which were measured over a wide temperature range, revealed that the leakage current in SiO2/4H-SiC on the Si-face can be explained as the sum of the Fowler-Nordheim (FN) tunneling and Poole-Frenkel (PF) emission leakage currents. A rigorous FN analysis provided the true barrier height for the SiO2/4H-SiC interface. On the basis of Arrhenius plots of the PF current separated from the total leakage current, the existence of carbon-related defects and/or oxygen vacancy defects was suggested in thermally grown SiO2 films on the Si-face of 4H-SiC.

  8. Leakage Current Degradation Due to Ion Drift and Diffusion in Tantalum and Niobium Oxide Capacitors

    Directory of Open Access Journals (Sweden)

    Kuparowitz Martin

    2017-06-01

    Full Text Available High temperature and high electric field applications in tantalum and niobium capacitors are limited by the mechanism of ion migration and field crystallization in a tantalum or niobium pentoxide insulating layer. The study of leakage current (DCL variation in time as a result of increasing temperature and electric field might provide information about the physical mechanism of degradation. The experiments were performed on tantalum and niobium oxide capacitors at temperatures of about 125°C and applied voltages ranging up to rated voltages of 35 V and 16 V for tantalum and niobium oxide capacitors, respectively. Homogeneous distribution of oxygen vacancies acting as positive ions within the pentoxide layer was assumed before the experiments. DCL vs. time characteristics at a fixed temperature have several phases. At the beginning of ageing the DCL increases exponentially with time. In this period ions in the insulating layer are being moved in the electric field by drift only. Due to that the concentration of ions near the cathode increases producing a positively charged region near the cathode. The electric field near the cathode increases and the potential barrier between the cathode and insulating layer decreases which results in increasing DCL. However, redistribution of positive ions in the insulator layer leads to creation of a ion concentration gradient which results in a gradual increase of the ion diffusion current in the direction opposite to the ion drift current component. The equilibrium between the two for a given temperature and electric field results in saturation of the leakage current value. DCL vs. time characteristics are described by the exponential stretched law. We found that during the initial part of ageing an exponent n = 1 applies. That corresponds to the ion drift motion only. After long-time application of the electric field at a high temperature the DCL vs. time characteristics are described by the exponential

  9. Insulation Resistance and Leakage Currents in Low-Voltage Ceramic Capacitors with Cracks

    Science.gov (United States)

    Teverovsky, Alexander A.

    2016-01-01

    Measurement of insulation resistance (IR) in multilayer ceramic capacitors (MLCCs) is considered a screening technique that ensures the dielectric is defect-free. This work analyzes the effectiveness of this technique for revealing cracks in ceramic capacitors. It is shown that absorption currents prevail over the intrinsic leakage currents during standard IR measurements at room temperature. Absorption currents, and consequently IR, have a weak temperature dependence, increase linearly with voltage (before saturation), and are not sensitive to the presence of mechanical defects. In contrary, intrinsic leakage currents increase super-linearly with voltage and exponentially with temperature (activation energy is in the range from 0.6 eV to 1.1 eV). Leakage currents associated with the presence of cracks have a weaker dependence on temperature and voltage compared to the intrinsic leakage currents. For this reason, intrinsic leakage currents prevail at high temperatures and voltages, thus masking the presence of defects.

  10. Effect of STI-induced mechanical stress on leakage current in deep submicron CMOS devices

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    The shallow trench isolation (STI) induced mechanical stress significantly affects the CMOS device off-state leakage behaviour. In this paper, we designed two types of devices to investigate this effect, and all leakage components,including sub-threshold leakage (Isub), gate-induced-drain-leakage (IGIDL), gate edge-direct-tunnelling leakage (IEDT) and band-to-band-tunnelling leakage (IBTBT) were analysed. For NMOS, Isub can be reduced due to the mechanical stress induced higher boron concentration in well region. However, the GIDL component increases simultaneously as a result of the high well concentration induced drain-to-well depletion layer narrowing as well as the shrinkage of the energy gap. For PMOS, the only mechanical stress effect on leakage current is the energy gap narrowing induced GIDL increase.

  11. Leakage current measurement of protective equipment insulating materials used in electrical installations

    Science.gov (United States)

    Buică, G.; Dobra, R.; Păsculescu, D.; Tătar, A.

    2016-06-01

    This research describes the behaviour of equipment and safety devices during use in extreme environmental conditions, in order to establish the technical conditions and additional health and safety requirements during operation, to ensure the health and safety of users, regardless of conditions and working environment in which they are use. The studies have been conducted both on new equipment and means of protection used in electrical installations. There has been evaluated protective equipment made of insulating rubber, reinforced fiberglass or PVC. They have been followed the technical characteristics and protection against electric shock by measuring the leakage current of different insulating materials.

  12. Leakage Current Optimization Techniques During Test Based on Don't Care Bits Assignment

    Institute of Scientific and Technical Information of China (English)

    Wei Wang; Yu Hu; Yin-He Han; Xiao-Wei Li; You-Sheng Zhang

    2007-01-01

    It is a well-known fact that test power consumption may exceed that during functional operation. Leakage power dissipation caused by leakage current in Complementary Metal-Oxide-Semiconductor (CMOS) circuits during test has become a significant part of the total power dissipation. Hence, it is important to reduce leakage power to prolong battery life in portable systems which employ periodic self-test, to increase test reliability and to reduce test cost. This paper analyzes leakage current and presents a kind of leakage current simulator based on the transistor stacking effect.Using it, we propose techniques based on don't care bits (denoted by Xs) in test vectors to optimize leakage current in integrated circuit (IC) test by genetic algorithm. The techniques identify a set of don't care inputs in given test vectors and reassign specified logic values to the X inputs by the genetic algorithm to get minimum leakage vector (MLV).Experimental results indicate that the techniques can effectually optimize leakage current of combinational circuits and sequential circuits during test while maintaining high fault coverage.

  13. A new on-line leakage current monitoring system of ZnO surge arresters

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Bok-Hee [Research Center for Next-Generation High Voltage and Power Technology, Inha University, 253 Yonghyun-dong, Nam-ku, Incheon 402-751 (Korea, Republic of)]. E-mail: bhlee@inha.ac.kr; Kang, Sung-Man [Research Center for Next-Generation High Voltage and Power Technology, Inha University, 253 Yonghyun-dong, Nam-ku, Incheon 402-751 (Korea, Republic of)

    2005-05-15

    This paper presents a new on-line leakage current monitoring system of zinc oxide (ZnO) surge arresters. To effectively diagnose the deterioration of ZnO surge arresters, a new algorithm and on-line leakage current detection device, which uses the time-delay addition method, for discriminating the resistive and capacitive currents was developed to use in the aging test and durability evaluation for ZnO arrester blocks. A computer-based measurement system of the resistive leakage current, the on-line monitoring device can detect accurately the leakage currents flowing through ZnO surge arresters for power frequency ac applied voltages. The proposed on-line leakage current monitoring device of ZnO surge arresters is more highly sensitive and gives more linear response than the existing devices using the detection method of the third harmonic leakage currents. Therefore, the proposed leakage current monitoring device can be useful for predicting the defects and performance deterioration of ZnO surge arresters in power system applications.

  14. A Review of Novel Leakage Current Suppression Techniques for Transformerless Photovoltaic Inverters

    Institute of Scientific and Technical Information of China (English)

    WU Weiyang; GUO Xiaoqiang

    2012-01-01

    In recent years, the transformerless PV inverters have been paid more attention due to cost and size reduction, as well as efficiency improvement compared with the conventional transformer ones. Leakage current suppression is one of the most important techniques for transformerless grid connected photovoltaic systems. The objective of this paper is to present a comprehensive review of the recently developed solution to the leakage current reduction. First of all, the common-mode model of the PV system is described to explain how the leakage current generates.

  15. Process effects on leakage current of Si-PIN neutron detectors with porous microstructure

    Energy Technology Data Exchange (ETDEWEB)

    Yu, Baoning; Zhao, Kangkang; Yang, Taotao [Beijing University of Technology, Chaoyang District, Pingleyuan 100, 100124 Beijing (China); Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Ruoshui Road 398, 215123 Suzhou (China); Jiang, Yong; Fan, Xiaoqiang [Institute of Nuclear Physics and Chemistry, CAEP, Mianshan Road 64, 621900 Mianyang (China); Lu, Min [Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Ruoshui Road 398, 215123 Suzhou (China); Han, Jun [Beijing University of Technology, Chaoyang District, Pingleyuan 100, 100124 Beijing (China)

    2017-06-15

    Using the technique of Microfabrication, such as deep silicon dry etching, lithography, etc. Si-PIN neutron detectors with porous microstructure have been successfully fabricated. In order to lower the leakage current, the key fabrication processes, including the Al windows opening, deep silicon etching and the porous side wall smoothing, have been optimized. The cross-section morphology and current-voltage characteristics have been measured to evaluate the microfabrication processes. With the optimized conditions presented by the measurements, a neutron detector with a leakage current density of 2.67 μA cm{sup -2} at a bias of -20 V is obtained. A preliminary neutron irradiation test with {sup 252}Cf neutron source has also been carried out. The neutron irradiation test shows that the neutron detection efficiency of the microstructured neutron detectors is almost 3.6 times higher than that of the planar ones. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  16. A Modified Time-Delay Addition Method to Extract Resistive Leakage Current of MOSA

    Science.gov (United States)

    Khodsuz, Masume; Mirzaie, Mohammad

    2016-12-01

    Metal oxide surge arresters are one of the most important equipment for power system protection against switching and lightning over-voltages. High-energy stresses and environmental features are the main factors which degrade surge arresters. In order to verify surge arresters good condition, their monitoring is necessary. The majority of surge arrester monitoring techniques is based on total leakage current decomposition of their capacitive and resistive components. This paper introduces a new approach based on time-delay addition method to extract the resistive current from the total leakage current without measuring voltage signal. Surge arrester model for calculating leakage current has been performed in ATP-EMTP. In addition, the signal processing has been done using MATLAB software. To show the accuracy of the proposed method, experimental tests have been performed to extract resistive leakage current by the proposed method.

  17. Leakage current characteristics and dielectric breakdown of antiferroelectric Pb0.92La0.08Zr0.95Ti0.05O3 film capacitors grown on metal foils

    Science.gov (United States)

    Ma, Beihai; Kwon, Do-Kyun; Narayanan, Manoj; Balachandran, U. Balu

    2008-10-01

    We have grown crack-free antiferroelectric (AFE) Pb0.92La0.08Zr0.95Ti0.05O3 (PLZT) films on nickel foils by chemical solution deposition. To eliminate the parasitic effect caused by the formation of a low-permittivity interfacial oxide, we applied a conductive buffer layer of lanthanum nickel oxide (LNO) on the nickel foil by chemical solution deposition prior to the PLZT deposition. Use of the LNO buffer allowed high-quality film-on-foil capacitors to be prepared at high temperatures in air. With the AFE PLZT deposited on LNO-buffered Ni foils, we observed field-induced phase transformations of AFE to ferroelectric (FE). The AFE-to-FE phase transition field, EAF = 260 kV cm-1, and the reverse phase transition field, EFA = 220 kV cm-1, were measured at room temperature on a ~1.15 µm thick PLZT film grown on LNO-buffered Ni foils. The relative permittivities of the AFE and FE states were ~530 and ~740, respectively, with dielectric loss <0.05 at room temperature. P-E hysteresis loop measured at room temperature confirmed the field-induced phase transition. The time-relaxation current density was investigated under various applied electric fields. The leakage current density of a 1.15 µm thick AFE PLZT film-on-foil capacitor was 5 × 10-9 A cm-2 at room temperature under 87 kV cm-1 applied field. The breakdown behaviour of the AFE PLZT film-on-foil capacitors was studied by Weibull analysis. The mean breakdown time decreased exponentially with increasing applied field. The mean breakdown time was over 610 s when a field of 1.26 MV cm-1 was applied to a 1.15 µm thick AFE PLZT film-on-foil capacitor.

  18. Modeling and analysis of sub-surface leakage current in nano-MOSFET under cutoff regime

    Science.gov (United States)

    Swami, Yashu; Rai, Sanjeev

    2017-02-01

    The high leakage current in nano-meter regimes is becoming a significant portion of power dissipation in nano-MOSFET circuits as threshold voltage, channel length, and gate oxide thickness are scaled down to nano-meter range. Precise leakage current valuation and meticulous modeling of the same at nano-meter technology scale is an increasingly a critical work in designing the low power nano-MOSFET circuits. We present a specific compact model for sub-threshold regime leakage current in bulk driven nano-MOSFETs. The proposed logical model is instigated and executed into the latest updated PTM bulk nano-MOSFET model and is found to be in decent accord with technology-CAD simulation data. This paper also reviews various transistor intrinsic leakage mechanisms for nano-MOSFET exclusively in weak inversion, like drain-induced barricade lowering (DIBL), gate-induced drain leakage (GIDL), gate oxide tunneling (GOT) leakage etc. The root cause of the sub-surface leakage current is mainly due to the nano-scale short channel length causing source-drain coupling even in sub-threshold domain. Consequences leading to carriers triumphing the barricade between the source and drain. The enhanced model effectively considers the following parameter dependence in the account for better-quality value-added results like drain-to-source bias (VDS), gate-to-source bias (VGS), channel length (LG), source/drain junction depth (Xj), bulk doping concentration (NBULK), and operating temperature (Top).

  19. Analysis of Reverse-Bias Leakage Current Mechanisms in Metal/GaN Schottky Diodes

    Directory of Open Access Journals (Sweden)

    P. Pipinys

    2010-01-01

    Full Text Available Temperature-dependent reverse-bias current-voltage characteristics obtained by other researchers for Schottky diodes fabricated on GaN are reinterpreted in terms of phonon-assisted tunneling (PhAT model. Temperature dependence of reverse-bias leakage current is shown could be caused by the temperature dependence of electron tunneling rate from traps in the metal-semiconductor interface to the conduction band of semiconductor. A good fit of experimental data with the theory is received in a wide temperature range (from 80 K to 500 K using for calculation the effective mass of 0.222 me. and for the phonon energy the value of 70 meV. The temperature and bias voltages dependences of an apparent barrier height (activation energy are also explicable in the framework of the PhAT model.

  20. Leakage Current Elimination of Four-Leg Inverter for Transformerless Three-Phase PV Systems

    DEFF Research Database (Denmark)

    Guo, Xiaoqiang; He, Ran; Jian, Jiamin

    2016-01-01

    Eliminating the leakage current is one of the most important issues for transformerless three phase photovoltaic (PV) systems. In this paper, the leakage current elimination of a three-phase four-leg PV inverter is investigated. With the common mode loop model established, the generation mechanis...... the different modulation methods are implemented and tested on the TMS320F28335 DSP +XC3S400 FPGA digital control platform. The experimental results verify the effectiveness of the proposed solution....

  1. Investigating the effects of the interface defects on the gate leakage current in MOSFETs

    Science.gov (United States)

    Mao, Ling-Feng

    2008-08-01

    The effects of the interface defects on the gate leakage current have been numerically modeled. The results demonstrate that the shallow and deep traps have different effects on the dependence relation of the stress-induced leakage current on the oxide electric field in the regime of direct tunneling, whereas both traps keep the same dependence relation in the regime of Fowler-Nordheim tunneling. The results also shows that the stress-induced leakage current will be the largest at a moderate oxide voltage for the electron interface traps but it increases with the decreasing oxide voltage for the hole interface traps. The results illustrate that the stress-induced leakage current strongly depends on the location of the electron interface traps but it weakly depends on the location of the hole interface traps. The increase in the gate leakage current caused by the electron interface traps can predict the increase, then decrease in the stress-induced leakage current, with decreasing oxide thickness, which is observed experimentally. And the electron interface trap level will have a large effect on the peak height and position.

  2. Leakage Characteristics of Dual-Cannula Fenestrated Tracheostomy Tubes during Positive Pressure Ventilation: A Bench Study

    Directory of Open Access Journals (Sweden)

    Thomas Berlet

    2016-01-01

    Full Text Available This study compared the leakage characteristics of different types of dual-cannula fenestrated tracheostomy tubes during positive pressure ventilation. Fenestrated Portex® Blue Line Ultra®, TRACOE® twist, or Rüsch® Traceofix® tracheostomy tubes equipped with nonfenestrated inner cannulas were tested in a tracheostomy-lung simulator. Transfenestration pressures and transfenestration leakage rates were measured during positive pressure ventilation. The impact of different ventilation modes, airway pressures, temperatures, and simulated static lung compliance settings on leakage characteristics was assessed. We observed substantial differences in transfenestration pressures and transfenestration leakage rates. The leakage rates of the best performing tubes were <3.5% of the delivered minute volume. At body temperature, the leakage rates of these tracheostomy tubes were <1%. The tracheal tube design was the main factor that determined the leakage characteristics. Careful tracheostomy tube selection permits the use of fenestrated tracheostomy tubes in patients receiving positive pressure ventilation immediately after stoma formation and minimises the risk of complications caused by transfenestration gas leakage, for example, subcutaneous emphysema.

  3. Leakage Characteristics of Dual-Cannula Fenestrated Tracheostomy Tubes during Positive Pressure Ventilation: A Bench Study.

    Science.gov (United States)

    Berlet, Thomas; Marchon, Mathias

    2016-01-01

    This study compared the leakage characteristics of different types of dual-cannula fenestrated tracheostomy tubes during positive pressure ventilation. Fenestrated Portex® Blue Line Ultra®, TRACOE® twist, or Rüsch® Traceofix® tracheostomy tubes equipped with nonfenestrated inner cannulas were tested in a tracheostomy-lung simulator. Transfenestration pressures and transfenestration leakage rates were measured during positive pressure ventilation. The impact of different ventilation modes, airway pressures, temperatures, and simulated static lung compliance settings on leakage characteristics was assessed. We observed substantial differences in transfenestration pressures and transfenestration leakage rates. The leakage rates of the best performing tubes were <3.5% of the delivered minute volume. At body temperature, the leakage rates of these tracheostomy tubes were <1%. The tracheal tube design was the main factor that determined the leakage characteristics. Careful tracheostomy tube selection permits the use of fenestrated tracheostomy tubes in patients receiving positive pressure ventilation immediately after stoma formation and minimises the risk of complications caused by transfenestration gas leakage, for example, subcutaneous emphysema.

  4. Negative charging effect of traps on the gate leakage current of an AlGaN/GaN HEMT

    Energy Technology Data Exchange (ETDEWEB)

    Kim, J. J.; Lim, J. H.; Yang, J. W. [Chonbuk National University, Jeonju (Korea, Republic of); Stanchina, W. [University of Pittsburgh, Pittsburgh, PA (United States)

    2014-08-15

    The negative charging effect of surface traps on the gate leakage current of AlGaN/GaN high electron mobility transistors (HEMTs) was investigated. The gate leakage current could be decreased by two orders of magnitude by using a photo-electrochemical process to treat of the source and the drain region, but current flowed into the gate even at a negative voltage in a limited region when the measurement was executed with a gate voltage sweep from negative to positive voltage. Also the electrical characteristics of the HEMT were degraded by pulsed operation of the gate. Traps newly generated on the surface were regarded as sources for the current that flowed against the applied voltage, and the number of traps was estimated. Also, a slow transient in the drain current was confirmed based on the results of delayed sweep measurements.

  5. RF leakage current in electrosurgical units: Influence of the layout in taking measurements

    Science.gov (United States)

    Gentile, L.; Palacios, P.

    2007-11-01

    The RF leakage current in electrosurgical units is a critical parameter to measure, because it may cause accidental burns in patients. The particular standard for electrosurgical units IEC 60601-2-2 indicates the maximum RF leakage levels and defines the elements and their layout to do these measurements. On this paper we show the RF leakage current values of 6 electrosurgical units. We did these measurements in two different ways: in the first one we measured in normal conditions of use in the operating rooms and in the second we followed the mentioned Standard. The results shows differences between one group and the other, observing higher RF leakage current values in the measurements that we did without following the standard's layout.

  6. RF leakage current in electrosurgical units: Influence of the layout in taking measurements

    Energy Technology Data Exchange (ETDEWEB)

    Gentile, L; Palacios, P [Cardiology and Cardiovascular Surgery Institute, Favaloro Foundation Biomedical Engineering Department, Av. Belgrano 1746. Bs. As. (Argentina)

    2007-11-15

    The RF leakage current in electrosurgical units is a critical parameter to measure, because it may cause accidental burns in patients. The particular standard for electrosurgical units IEC 60601-2-2 indicates the maximum RF leakage levels and defines the elements and their layout to do these measurements. On this paper we show the RF leakage current values of 6 electrosurgical units. We did these measurements in two different ways: in the first one we measured in normal conditions of use in the operating rooms and in the second we followed the mentioned Standard. The results shows differences between one group and the other, observing higher RF leakage current values in the measurements that we did without following the standard's layout.

  7. Compilation of current literature on seals, closures, and leakage for radioactive material packagings

    Energy Technology Data Exchange (ETDEWEB)

    Warrant, M.M.; Ottinger, C.A.

    1989-01-01

    This report presents an overview of the features that affect the sealing capability of radioactive material packagings currently certified by the US Nuclear Regulatory Commission. The report is based on a review of current literature on seals, closures, and leakage for radioactive material packagings. Federal regulations that relate to the sealing capability of radioactive material packagings, as well as basic equations for leakage calculations and some of the available leakage test procedures are presented. The factors which affect the sealing capability of a closure, including the properties of the sealing surfaces, the gasket material, the closure method and the contents are discussed in qualitative terms. Information on the general properties of both elastomer and metal gasket materials and some specific designs are presented. A summary of the seal material, closure method, and leakage tests for currently certified packagings with large diameter seals is provided. 18 figs., 9 tabs.

  8. Sub-Threshold Leakage Current Reduction Techniques In VLSI Circuits -A Survey

    Directory of Open Access Journals (Sweden)

    V.Sri Sai Harsha

    2015-09-01

    Full Text Available There is an increasing demand for portable devices powered up by battery, this led the manufacturers of semiconductor technology to scale down the feature size which results in reduction in threshold voltage and enables the complex functionality on a single chip. By scaling down the feature size the dynamic power dissipation has no effect but the static power dissipation has become equal or more than that of Dynamic power dissipation. So in recent CMOS technologies static power dissipation i.e. power dissipation due to leakage current has become a challenging area for VLSI chip designers. In order to prolong the battery life and maintain reliability of circuit, leakage current reduction is the primary goal. A basic overview of techniques used for reduction of sub-threshold leakages is discussed in this paper. Based on the surveyed techniques, one would be able to choose required and apt leakage reduction technique.

  9. Modified model of gate leakage currents in AlGaN/GaN HEMTs

    Science.gov (United States)

    Wang, Yuan-Gang; Feng, Zhi-Hong; Lv, Yuan-Jie; Tan, Xin; Dun, Shao-Bo; Fang, Yu-Long; Cai, Shu-Jun

    2016-10-01

    It has been reported that the gate leakage currents are described by the Frenkel-Poole emission (FPE) model, at temperatures higher than 250 K. However, the gate leakage currents of our passivated devices do not accord with the FPE model. Therefore, a modified FPE model is developed in which an additional leakage current, besides the gate (I II), is added. Based on the samples with different passivations, the I II caused by a large number of surface traps is separated from total gate currents, and is found to be linear with respect to (φ B-V g)0.5. Compared with these from the FPE model, the calculated results from the modified model agree well with the I g-V g measurements at temperatures ranging from 295 K to 475 K. Project supported by the National Natural Science Foundation of China (Grant No. 61306113).

  10. Effect of High-K Dielectric Materials on Leakage Current

    OpenAIRE

    Puneet Kundu; Rekha Yadav

    2012-01-01

    In this paper, a comparative study of different high-k dielectric materials based on tunneling current density has been deployed. The various types of high-k dielectric materials such as aluminium oxide, hafnium oxide, silicon nitride are compared using Schrödinger equation. The analytical model of tunneling current density has been computed using WKB approximation method. The simulation results of various high-k dielectric materials have also been computed. Different high-k dielectric materi...

  11. Effect of High-K Dielectric Materials on Leakage Current

    Directory of Open Access Journals (Sweden)

    Puneet Kundu

    2012-06-01

    Full Text Available In this paper, a comparative study of different high-k dielectric materials based on tunneling current density has been deployed. The various types of high-k dielectric materials such as aluminium oxide, hafnium oxide, silicon nitride are compared using Schrödinger equation. The analytical model of tunneling current density has been computed using WKB approximation method. The simulation results of various high-k dielectric materials have also been computed. Different high-k dielectric materials are also compared on the basis of barrier height and effective mass etc.

  12. Leakage Characteristics of Dual-Cannula Fenestrated Tracheostomy Tubes during Positive Pressure Ventilation: A Bench Study

    OpenAIRE

    Thomas Berlet; Mathias Marchon

    2016-01-01

    This study compared the leakage characteristics of different types of dual-cannula fenestrated tracheostomy tubes during positive pressure ventilation. Fenestrated Portex® Blue Line Ultra®, TRACOE® twist, or Rüsch® Traceofix® tracheostomy tubes equipped with nonfenestrated inner cannulas were tested in a tracheostomy-lung simulator. Transfenestration pressures and transfenestration leakage rates were measured during positive pressure ventilation. The impact of different ventilation modes, air...

  13. Analysis of Leakage Current and DC Injection in Transformerless PV Inverter Topologies

    Directory of Open Access Journals (Sweden)

    Anjali Varghese C

    2014-03-01

    Full Text Available Considering low efficiencies of solar panels, the reliability and efficiency of power electronic interface has to be ensured. Transformerless PV inverters increases the efficiency by nearly 2% and decreases cost by 25%. With no galvanic isolation comes the problem of dc injection and ground leakage current which pauses serious problems to core saturation of distribution transformers, cable corrosion, Power quality and EMI problems and has to be limited as per IEEE standards. This paper gives an analysis of leakage current flowing through the parasitic capacitance and also the DC injection in the output of the inverter. Analysis is done for various values of parasitic capacitance. Five different HBridge derived topologies and PWM techniques are evaluated on the basis of leakage current and DC injection.

  14. Investigation of Leakage Current Waveforms Recorded in a Coastal High Voltage Substation

    Directory of Open Access Journals (Sweden)

    E. Thalassinakis

    2011-06-01

    Full Text Available Leakage current monitoring is a widely employed technique to monitor the performance of outdoor insulation. The evaluation of leakage current waveforms recorded in the field, offers significant information since insulation’s performance is strongly linked with local conditions, and the waveforms’ shape correlate to different types of surface activity. In this paper, an investigation of leakage current waveforms recorded in a 150 kV coastal Substations suffering which suffers intense marine pollution is presented. Investigation of the recorded waveforms verified the basic waveform shapes described in the literature. Further, several variations of the basic types and complex waveforms, as well as field related waveforms, are presented. The need for added categorization criteria in the case of field measurements is discussed.

  15. Leakage current and induced electrical energy dissipation in nonlinear oscillation of dielectric elastomer actuators

    Science.gov (United States)

    Zhang, Junshi; Chen, Hualing; Li, Dichen

    2017-09-01

    Subject to a high voltage, leakage current and induced electrical energy dissipation inevitably occur during the actuation of dielectric elastomers (DEs). In this article, a theoretical model is developed to investigate the dissipative performance of DEs in dynamic actuation. Effects of three different actuation conditions, including DE materials’ viscoelasticity intensity, amplitude of applied voltage, and mechanical tensile force, are considered. Numerical calculations are employed to detect the dynamic dissipative performance of DEs including leakage current, electrical power density, and electrical energy density in certain vibrational periods. Leakage current and induced electrical energy dissipation are enhanced with the enlargement of amplitude of applied voltage and mechanical force, and are suppressed as the intensity of DEs’ viscoelastic creep increases. The electrical energy for dissipation and actuation is also analyzed and compared.

  16. Analytical model for thin-film SOI PIN-diode leakage current

    Science.gov (United States)

    Schmidt, Andrei; Dreiner, Stefan; Vogt, Holger; Goehlich, Andreas; Paschen, Uwe

    2017-04-01

    An analytical model for the thin-film silicon-on-insulator pin-diode leakage current is presented. Particularly the back-gate potential influence on the leakage current is addressed. The two-dimensional Poisson equation is simplified and then solved including the influence of the back-gate potential. Subsequently the analytical model is verified by comparison with numerical simulation and measurements. For the verification of the model the dependence on the back-gate potential, reverse voltage, device geometry, doping concentration and -polarity is considered. In this procedure the interface recombination velocity is used as fitting parameter. The model verification shows an accurate modeling of the leakage current at full depletion in combination with a back-gate potential dependence. The usage of the model is limited to back-gate and reverse potentials close to full depletion state of the pin-diode.

  17. Leakage Currents and Capacitances of Thick CZT Detectors

    CERN Document Server

    Garson, Alfred; Jung, Ira V; Dowkontt, Paul; Bose, Richard; Simburger, Garry; Krawczynski, Henric

    2009-01-01

    The quality of Cadmium Zinc Telluride (CZT) detectors is steadily improving. For state of the art detectors, readout noise is thus becoming an increasingly important factor for the overall energy resolution. In this contribution, we present measurements and calculations of the dark currents and capacitances of 0.5 cm-thick CZT detectors contacted with a monolithic cathode and 8x8 anode pixels on a surface of 2 cm x 2 cm. Using the NCI ASIC from Brookhaven National Laboratory as an example, we estimate the readout noise caused by the dark currents and capacitances. Furthermore, we discuss possible additional readout noise caused by pixel-pixel and pixel-cathode noise coupling.

  18. Investigation of leakage current and breakdown voltage in irradiated double-sided 3D silicon sensors

    Science.gov (United States)

    Dalla Betta, G.-F.; Ayllon, N.; Boscardin, M.; Hoeferkamp, M.; Mattiazzo, S.; McDuff, H.; Mendicino, R.; Povoli, M.; Seidel, S.; Sultan, D. M. S.; Zorzi, N.

    2016-09-01

    We report on an experimental study aimed at gaining deeper insight into the leakage current and breakdown voltage of irradiated double-sided 3D silicon sensors from FBK, so as to improve both the design and the fabrication technology for use at future hadron colliders such as the High Luminosity LHC. Several 3D diode samples of different technologies and layout are considered, as well as several irradiations with different particle types. While the leakage current follows the expected linear trend with radiation fluence, the breakdown voltage is found to depend on both the bulk damage and the surface damage, and its values can vary significantly with sensor geometry and process details.

  19. Leakage Current Suppression with A Novel Six-Switch Photovoltaic Grid-Connected Inverter

    DEFF Research Database (Denmark)

    Wei, Baoze; Guo, Xiaoqiang; Guerrero, Josep M.;

    2015-01-01

    In order to solve the problem of the leakage current in non-isolated photovoltaic (PV) systems, a novel six-switch topology and control strategy are proposed in this paper. The inductor-bypass strategy solves the common-mode voltage limitation of the conventional six-switch topology in case...... of unmatched inductances. And the stray capacitor voltage of the non-isolated photovoltaic system is free of high frequency ripples. Theoretical analysis and simulation are carried out to verify the proposed topology and its control strategy. Results indicate that the leakage current suppression can...

  20. H6 Non-isolated Full Bridge Grid-connected PV Inverters With Low Leakage Currents

    Institute of Scientific and Technical Information of China (English)

    ZHANG Li; SUN Kai; FENG Lanlan; XING Yan; XU Ming

    2012-01-01

    Non-isolated inverter topologies have obtained more attentions in photovoltaic (PV) generation system since they are featured by higher efficiency and lower cost. In order to meet the safety requirement for the non-isolated grid-tied PV inverter, the common-mode leakage current is required to be carefully tackled due to the absence of the transformer. A H6 non-isolated full bridge PV grid-connected inverter is proposed to meet the limit for common-mode leakage current in grid-tied PV generation systems, as shown in Fig. 1.

  1. Influence of the Leakage Current on the Performance of Large Area Silicon Drift Detectors

    CERN Document Server

    Rashevsky, A; CERN. Geneva; Piemonte, C

    2000-01-01

    Abstract In this paper we investigate the influence of the leakage current on the performance of Silicon Drift Detectors. First, analytical considerations are given in order to highlight the problems, specific for this type of detector, that emerge with leakage current. Then the obtained results are compared with the data of laboratory measurements. Aiming at a mass production of SDDs for the Inner Tracking System of the ALICE experiment at LHC, we propose a simple and fast measurement for a preliminary selection before passing to a detailed acceptance test.

  2. Power-Integrated Circuit Active Leakage Current Detector

    Directory of Open Access Journals (Sweden)

    M. F. Bulacio

    2012-01-01

    Full Text Available Most of the failures of induction motors become insulation faults, causing a permanent damage. Using differential current transformers, a system capable of insulation fault detection was developed, based on the differential relay protection scheme. Both signal injection and fault detection circuitry were integrated in a single chip. The proposed scheme is faster than other existing protection and not restricted to protect induction motors, but several other devices (such as IGBTs and systems. This paper explains the principle of operation of fault protection scheme and analyzes an integrated implementation through simulations and experimental results. A power-integrated circuit (PIC implementation is presented.

  3. Leakage Currents and Capacitances of Thick CZT Detectors

    OpenAIRE

    Garson III, Alfred; Li, Qiang; Jung, Ira V.; Dowkontt, Paul; Bose, Richard; Simburger, Garry; Krawczynski, Henric

    2009-01-01

    The quality of Cadmium Zinc Telluride (CZT) detectors is steadily improving. For state of the art detectors, readout noise is thus becoming an increasingly important factor for the overall energy resolution. In this contribution, we present measurements and calculations of the dark currents and capacitances of 0.5 cm-thick CZT detectors contacted with a monolithic cathode and 8x8 anode pixels on a surface of 2 cm x 2 cm. Using the NCI ASIC from Brookhaven National Laboratory as an example, we...

  4. Deep-Trap Stress Induced Leakage Current Model for Nominal and Weak Oxides

    Science.gov (United States)

    Kamohara, Shiro; Hu, Chenming; Okumura, Tsugunori

    2008-08-01

    We have developed a model of the stress-induced leakage current (SILC) based on the inelastic trap-assisted tunneling (ITAT) by introducing a trap with a deep energy level of 3.6 eV from the bottom of the conduction band. This model can explain both of two field dependencies, i.e., a field dependence of the direct tunneling (DT) for A-mode SILC and that of the Fowler-Nordheim (FN) tunneling for B-mode SILC by analytical equations of a common form. For simple analytical equations, we introduce the most favorable trap position (MFTP), which gives the largest contribution to the leakage current. The trap area density for A-mode SILC of around 1×1010 cm-2 and the area density of the leakage paths for B-mode SILC of 1×102 cm-2 were obtained by comparisons between the experimental results and the present model.

  5. Characteristics of tip-leakage flow in an axial fan

    Science.gov (United States)

    Park, Keuntae; Choi, Haecheon; Choi, Seokho; Sa, Yongcheol

    2014-11-01

    An axial fan with a shroud generates complicated vortical structures by the interaction of the axial flow with the fan blades and shroud near the blade tips. Large eddy simulation (LES) is performed for flow through a forward-swept axial fan, operating at the design condition of Re = 547,000 based on the radius of blade tip and the tip velocity. A dynamic global model (Lee et al. 2010) is used for a subgrid-scale model, and an immersed boundary method in a non-inertial reference frame (Kim & Choi 2006) is adopted for the present simulation. It is found that two vortical structures are formed near the blade tip: the main tip leakage vortex (TLV) and the auxiliary TLV. The main TLV is initiated near the leading edge, develops downstream, and impinges on the pressure surface of the next blade, where the pressure fluctuations and turbulence intensity become high. On the other hand, the auxiliary TLV is initiated at the aft part of the blade but is relatively weak such that it merges with the main TLV. Supported by the KISTI Supercomputing Center (KSC-2014-C2-014).

  6. Rotordynamic and leakage characteristics of a 4-stage brush seal

    Science.gov (United States)

    Conner, K. J.; Childs, D. W.

    1992-12-01

    Experimental results are presented for the direct and cross-coupled stiffness and damping coefficients as well as the leakage performance for a 4-stage brush seal. Variable test parameters include the inlet pressure, pressure ratio, shaft speed, fluid prerotation, and seal spacing. Direct damping is shown to increase with running speed; otherwise, the rotordynamic coefficients are relatively insensitive to changes in the test parameters. Cross-coupled stiffness is generally unchanged by increasing the inlet tangential velocity to the seals, suggesting that the brush seal is not affected by inlet swirl. Direct stiffness is shown to increase with frequency; however, the magnitudes of direct stiffness are always positive. Cross-coupled stiffness increases slightly with frequency; yet not as drastically as direct stiffness. Comparisons of test results for the 4-stage brush seal with an 8-cavity labyrinth showed superior rotordynamics performance for the brush seal; viz., large values for direct stiffness and lower values for the (destabilizing) cross-coupled stiffness coefficient. The damping for brush seals is smaller, but comparable to labyrinth seals. The whirl-frequency ratio is always smaller for the brush seal.

  7. Space-charge-limited leakage current in high dielectric constant and ferroelectric thin films considering the field-dependent permittivity

    Science.gov (United States)

    Sun, J.; Zheng, X. J.; Yin, W.; Tang, M. H.; Li, W.

    2010-12-01

    Distinguishing from the traditional characterization on high-field leakage current density-voltage relationship, the field-dependent permittivity from the polarization derivative is used to solve the space-charge-limited conduction, and the simulated leakage current densities are compared with the previous experimental observations. The influences of the mobility, ferroelectric parameters, and film thickness on the leakage current densities are discussed. The results verify that the high-field quasi-Ohmic region observed experimentally may result from the field-dependent permittivity, and that the leakage current can be influenced by the ferroelectric polarization.

  8. Single phase cascaded H5 inverter with leakage current elimination for transformerless photovoltaic system

    DEFF Research Database (Denmark)

    Guo, Xiaoqiang; Jia, X.; Lu, Z.;

    2016-01-01

    Leakage current reduction is one of the important issues for the transformelress PV systems. In this paper, the transformerless single-phase cascaded H-bridge PV inverter is investigated. The common mode model for the cascaded H4 inverter is analyzed. And the reason why the conventional cascade H...

  9. A Transformerless Single Phase Inverter For photovoltaic Systems without Leakage Current

    DEFF Research Database (Denmark)

    Mostaan, Ali; Qu, Ying; Alizadeh, Ebrahim

    2017-01-01

    A new single phase inverter is introduced in this paper. In the proposed inverter, negative terminal of the DC source is common with the negative terminal of the grid. Therefore, the leakage current value is zero naturally and the safety is improved when the DC source is a photovoltaic module. In...

  10. Polarization retention loss in PbTiO3 ferroelectric films due to leakage currents

    NARCIS (Netherlands)

    Morelli, A.; Venkatesan, Sriram; Palasantzas, G.; Kooi, B. J.; De Hosson, J. Th. M.

    2007-01-01

    The relationship between retention loss in single crystal PbTiO3 ferroelectric thin films and leakage currents is demonstrated by piezoresponse and conductive atomic force microscopy measurements. It was found that the polarization reversal in the absence of an electric field followed a stretched ex

  11. Analysis of Non-Conventional Hybrid MOSFET Structure for Gate Leakage Current

    Directory of Open Access Journals (Sweden)

    RANA Ashwani K.

    2011-10-01

    Full Text Available A non-conventional hybrid MOSFET (HMOSstructure has been proposed to reduce the gate leakagecurrent. This non-conventional hybrid MOSFET consistsof source/drain-to-gate non-overlap region and high-kgate stack. The gate leakage behaviour of HMOS hasbeen investigated with the help of compact analyticalmodel, which is backed by Sentaurus Simulation. Ourmodel sustains a very good agreement between the modeland TCAD result. It is found that HMOS structure hasreduced the gate leakage current to great extent ascompared to conventional overlapped MOSFETstructure.

  12. Analysis of Gas Leakage and Current Loss of Solid Oxide Fuel Cells by Screen Printing

    DEFF Research Database (Denmark)

    Jia, Chuan; Han, Minfang; Chen, Ming

    2017-01-01

    calculated. Their performances of electrochemical impedance spectroscopy (EIS) were compared and distribution function of relaxation times (DRT) technique was also used to find the clue of gas leakage. Finally, thinning and penetrating holes were observed in electrolyte layer, which confirmed the occurrence......Two types of anode supported solid oxide fuel cell (SOFC) NiO-YSZ/YSZ/GDC/LSCF with the same structure and different manufacturing process were tested. Gas leakage was suspected for cells manufactured with screen printing technique. Effective leak current densities for both types of cells were...

  13. Asymmetric tunneling model of forward leakage current in GaN/InGaN light emitting diodes

    Energy Technology Data Exchange (ETDEWEB)

    Zhi, Ting; Tao, Tao; Liu, Bin, E-mail: bliu@nju.edu.cn, E-mail: rzhang@nju.edu.cn; Li, Yi; Zhuang, Zhe; Zhang, Guogang; Xie, Zili; Zhang, Rong, E-mail: bliu@nju.edu.cn, E-mail: rzhang@nju.edu.cn; Zheng, Youdou [Jiangsu Provincial Key Laboratory of Advanced photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing National Laboratory of Microstructures Nanjing University, Nanjing 210093 (China)

    2015-08-15

    Through investigating the temperature dependent current-voltage (T-I-V) properties of GaN based blue and green LEDs in this study, we propose an asymmetric tunneling model to understand the leakage current below turn-on voltage (V < 3.2 V): At the forward bias within 1.5 V ∼ 2.1 V (region 1), the leakage current is main attributed to electrons tunneling from the conduction band of n-type GaN layer to the valence band of p-type GaN layer via defect states in space-charge region (SCR); While, at the forward bias within 2 V ∼ 2.4 V (region 2), heavy holes tunneling gradually becomes dominant at low temperature (T < 200K) as long as they can overcome the energy barrier height. The tunneling barrier for heavy holes is estimated to be lower than that for electrons, indicating the heavy holes might only tunnel to the defect states. This asymmetric tunneling model shows a novel carrier transport process, which provides better understanding of the leakage characteristics and is vital for future device improvements.

  14. Asymmetric tunneling model of forward leakage current in GaN/InGaN light emitting diodes

    Directory of Open Access Journals (Sweden)

    Ting Zhi

    2015-08-01

    Full Text Available Through investigating the temperature dependent current-voltage (T-I-V properties of GaN based blue and green LEDs in this study, we propose an asymmetric tunneling model to understand the leakage current below turn-on voltage (V < 3.2 V: At the forward bias within 1.5 V ∼ 2.1 V (region 1, the leakage current is main attributed to electrons tunneling from the conduction band of n-type GaN layer to the valence band of p-type GaN layer via defect states in space-charge region (SCR; While, at the forward bias within 2 V ∼ 2.4 V (region 2, heavy holes tunneling gradually becomes dominant at low temperature (T < 200K as long as they can overcome the energy barrier height. The tunneling barrier for heavy holes is estimated to be lower than that for electrons, indicating the heavy holes might only tunnel to the defect states. This asymmetric tunneling model shows a novel carrier transport process, which provides better understanding of the leakage characteristics and is vital for future device improvements.

  15. Effect of crack size on gas leakage characteristics in a confined space

    Energy Technology Data Exchange (ETDEWEB)

    Sung, Kun Hyuk; Ryou, Hong Sun; Yoon, Kee Bong; Lee, Hy Uk; Bang, Joo Won [Chung-Ang University, Seoul (Korea, Republic of); Li, Longnan; Choi, Jin Wook; Kim, Dae Joong [Sogang University, Seoul (Korea, Republic of)

    2016-07-15

    We numerically investigated the influence of crack size on gas leakage characteristics in a confined space. The real scale model of underground Combined cycle power plant (CCPP) was taken for simulating gas leakage characteristics for different crack sizes such as 10 mm, 15 mm and 20 mm. The commercial code of Fluent (v.16.1) was used for three-dimensional simulation. In particular, a risk region showing such a probability of ignition was newly suggested with the concept of Lower flammable limit (LFL) of methane gas used in the present study to characterize the gas propagation and the damage area in space. From the results, the longitudinal and transverse leakage distances were estimated and analyzed for quantitative evaluation of risk area. The crack size was found to have a great impact on the longitudinal leakage distance, showing an increasing tendency with the crack size. In case of a crack size of 20 mm, the longitudinal leakage distance suddenly increased after 180 s, whereas it remained constant after 2 s in the other cases. This is because a confinement effect, which is caused by circulation flows in the whole space, increased the gas concentration near the gas flow released from the crack. The confinement effect is thus closely associated with the released mass flow rate changing with the crack size. This result would be useful in designing the gas detector system for preventing accidents in the confined space as like CCPP.

  16. Study on analysis technology of the leakage current from Power facilities by using the laser technology

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Won Bin; Lee, Bok Kyu; Ohk, Young Hwan [Korea Electric Power Corp. (KEPCO), Taejon (Korea, Republic of). Research Center; Han, Min Koo; Seung, Hwang Bo; Kwack, Hee Ro; Kim, Jae Chul [Electrical Engineering and Science Research Institute (Korea, Republic of)

    1995-12-31

    In order to apply the laser technology to the power systems, we widely investigated and analyzed optic fiber technology for signal transmissions, optic-sensor technology for detecting the physical quantum such as mechanical and electrical, and the base technology of laser application. The prototype was designed to detect the whole and the third harmonic current, for the analysis of the leakage current from gapless arrester. Also, the device was designed for portable use and for on-line checking. This prototype enables us to store and analyze the data easily by using the computer. Those stored data can be used as the reference data for estimating the extent of badness by analyzing and evaluating the trend of the leakage current with time. (author). 36 refs., 78 figs.

  17. New Approach to Low-Power & Leakage Current Reduction Technique for CMOS Circuit Design

    Directory of Open Access Journals (Sweden)

    Sujata Prajapati

    2014-02-01

    Full Text Available Leakage power dissipation has become major portion of total power consumption in the integrated device and is expected to grow exponentially in the next decade as per International Technology Roadmap for Semiconductors (IRTS. This directly affects the battery operated devices as it has long idle times. Thus by scaling down the threshold voltage has tremendously increased the sub threshold leakage current thereby making the static power dissipation very high. To overcome this problem several techniques has been proposed to overcome this high leakage power dissipation. A comprehensive survey and analysis of various leakage power minimization techniques is presented in this paper. Of the available techniques, eight techniques are considered for the analysis namely, Multi Threshold CMOS (MTCMOS, Super Cut-off CMOS (SCCMOS, Forced Transistor Stacking (FTS and Sleepy Stack (SS, Sleepy keeper (SK, Dual Stack (OS, and LECTOR. From the results, it is observed that Lector techniques produces lower power dissipation than the other techniques due to the ability of power gating.

  18. Leakage current phenomena in Mn-doped Bi(Na,K)TiO3-based ferroelectric thin films

    Science.gov (United States)

    Walenza-Slabe, J.; Gibbons, B. J.

    2016-08-01

    Mn-doped 80(Bi0.5Na0.5)TiO3-20(Bi0.5K0.5)TiO3 thin films were fabricated by chemical solution deposition on Pt/TiO2/SiO2/Si substrates. Steady state and time-dependent leakage current were investigated from room temperature to 180 °C. Undoped and low-doped films showed space-charge-limited current (SCLC) at high temperatures. The electric field marking the transition from Ohmic to trap-filling-limited current increased monotonically with Mn-doping. With 2 mol. % Mn, the current was Ohmic up to 430 kV/cm, even at 180 °C. Modeling of the SCLC showed that all films exhibited shallow trap levels and high trap concentrations. In the regime of steady state leakage, there were also observations of negative differential resistivity and positive temperature coefficient of resistivity near room temperature. Both of these phenomena were confined to relatively low temperatures (below ˜60 °C). Transient currents were observed in the time-dependent leakage data, which was measured out to several hundred seconds. In the undoped films, these were found to be a consequence of oxygen vacancy migration modulating the electronic conductivity. The mobility and thermal activation energy for oxygen vacancies was extracted as μion ≈ 1.7 × 10-12 cm2 V-1 s-1 and EA,ion ≈ 0.92 eV, respectively. The transient current displayed different characteristics in the 1 mol. % Mn-doped films which were not readily explained by oxygen vacancy migration.

  19. A new circuit technique for reduced leakage current in Deep Submicron CMOS technologies

    Directory of Open Access Journals (Sweden)

    A. Schmitz

    2005-01-01

    Full Text Available Modern CMOS processes in the Deep Submicron regime are restricted to supply voltages below 2 volts and further to account for the transistors' field strength limitations and to reduce the power per logic gate. To maintain the high switching performance, the threshold voltage must be scaled according with the supply voltage. However, this leads to an increased subthreshold current of the transistors in standby mode (VGS=0. Another source of leakage is gate current, which becomes significant for gate oxides of 3nm and below. We propose a Self-Biasing Virtual Rails (SBVR - CMOS technique which acts like an adaptive local supply voltage in case of standby mode. Most important sources of leakage currents are reduced by this technique. Moreover, SBVR-CMOS is capable of conserving stored information in sleep mode, which is vital for memory circuits. Memories are exposed to radiation causing soft errors. This well-known problem becomes even worse in standby mode of typical SRAMs, that have low driving performance to withstand alpha particle hits. In this paper, a 16-transistor SRAM cell is proposed, which combines the advantage of extremely low leakage currents with a very high soft error stability.

  20. Leakage Currents in Low-Voltage PME and BME Ceramic Capacitors

    Science.gov (United States)

    Teverovsky, Alexander

    2015-01-01

    Introduction of BME capacitors to high-reliability electronics as a replacement for PME capacitors requires better understanding of changes in performance and reliability of MLCCs to set justified screening and qualification requirements. In this work, absorption and leakage currents in various lots of commercial and military grade X7R MLCCs rated to 100V and less have been measured to reveal difference in behavior of PME and BME capacitors in a wide range of voltages and temperatures. Degradation of leakage currents and failures in virgin capacitors and capacitors with introduced cracks has been studied at different voltages and temperatures during step stress highly accelerated life testing. Mechanisms of charge absorption, conduction and degradation have been discussed and a failure model in capacitors with defects suggested.

  1. Gate Leakage Current Reduction With Advancement of Graded Barrier AlGaN/GaN HEMT

    Directory of Open Access Journals (Sweden)

    Palash Das

    2011-01-01

    Full Text Available The gate leakage current reduction solution of AlGaN/GaN HEMT device issue has been addressed in this paper with compositional grading of AlGaN barrier layer. This work is also conjugated with the critical thickness limitation of heterostructure material growth. Hence, critical thickness calculation of AlGaN over GaN has been kept in special view. 1D Schrodinger and Poisson solver was used to calculate the 2DEG concentration and effective location to use it in the ATLAS device simulator for the predictions. The proposed Al0.50Ga0.50N/Al0.35Ga0.65N/Al0.20Ga0.80N/GaN HEMT structure exhibits the leakage current of the order of around 15 nA/mm at gate voltage of 1 V.

  2. Stress-Induced Leakage Current in p+ Poly MOS Capacitors with Poly-Si and Poly-Si0.7Ge0.3 Gate Material

    NARCIS (Netherlands)

    Houtsma, V.E.; Holleman, J.; Salm, C.; Widdershoven, F.P.; Woerlee, P.H.

    1999-01-01

    The gate bias polarity dependence of stress-induced leakage current (SILC) of PMOS capacitors with a p+ polycrystalline silicon (poly-Si) and polycrystalline Silicon-Germanium (poly-Si0.7 Ge0.3) gate on 5.6-nm thick gate oxides has been investigated. It is shown that the SILC characteristics are hig

  3. Prediction of Pollution Flashover Voltage Based on Leakage Current Under AC Operating Voltage

    Institute of Scientific and Technical Information of China (English)

    MEI Hongwei; WANG Liming; GUAN Zhicheng; MAO Yingke

    2012-01-01

    This paper presented a model to predict the AC flashover voltage of contaminated suspension insulators.The prediction method is based on the maximum leakage current under AC operating voltage.Three kinds of widely used suspension insulators were tested in various contamination states such as pollution layers with different equivalent salt deposit density(ESDD),different composition of the conductive components,different non-soluble deposit density(NSDD) and different pollution distribution states to simulate the contamination states in nature.The effective ESDD was proposed and calculated.Influences of contamination states to maximum leakage current and flashover voltage were studied.Then,the relationships between flashover voltage and leakage current in these states were presented.Finally,considering the difference of insulator profiles,a new parameter is defined and a model to estimate the flashover voltage based on this parameter is developed.The model could be used in all kinds of suspension insulators in different contamination states and was validated by the test results.

  4. Leakage current induced by surfactant residues in self-assembly based ultralow-k dielectric materials

    Science.gov (United States)

    Krishtab, M.; Afanas'ev, V.; Stesmans, A.; De Gendt, S.

    2017-07-01

    In this work, we studied low-field leakage currents in the self-assembly based spin-on low-k dielectrics (k = 2.2) as it may be affected by the degree of the organic template decomposition. The distinct role of the template residues could be examined due to the remarkably different rate of organosilica matrix cross-linking and template decomposition during the hard-bake process. We found that the incomplete decomposition of the sacrificial organic phase is responsible for increased low-field leakage current through the dielectric. The analysis of photocurrent spectra and the results of electron resonance spectroscopy suggest that the degradation of electrical performance can be attributed to the presence of defect states ˜5 eV below the insulator conduction band induced by the residues in the form of oxidized sp3-carbon chains. The lowest leakage current is attained in the template-free material obtained by introduction of additional broadband UV-assisted curing (λ > 200 nm).

  5. Dynamic Memory Cells Using MoS2 Field-Effect Transistors Demonstrating Femtoampere Leakage Currents.

    Science.gov (United States)

    Kshirsagar, Chaitanya U; Xu, Weichao; Su, Yang; Robbins, Matthew C; Kim, Chris H; Koester, Steven J

    2016-09-27

    Two-dimensional semiconductors such as transition-metal dichalcogenides (TMDs) are of tremendous interest for scaled logic and memory applications. One of the most promising TMDs for scaled transistors is molybdenum disulfide (MoS2), and several recent reports have shown excellent performance and scalability for MoS2 MOSFETs. An often overlooked feature of MoS2 is that its wide band gap (1.8 eV in monolayer) and high effective masses should lead to extremely low off-state leakage currents. These features could be extremely important for dynamic memory applications where the refresh rate is the primary factor affecting the power consumption. Theoretical predictions suggest that leakage currents in the 10(-18) to 10(-15) A/μm range could be possible, even in scaled transistor geometries. Here, we demonstrate the operation of one- and two-transistor dynamic memory circuits using MoS2 MOSFETs. We characterize the retention times in these circuits and show that the two-transistor memory cell reveals MoS2 MOSFETs leakage currents as low as 1.7 × 10(-15) A/μm, a value that is below the noise floor of conventional DC measurements. These results have important implications for the future use of MoS2 MOSFETs in low-power circuit applications.

  6. Study of Leakage Current Behaviour on Artificially Polluted Surface of Ceramic Insulator

    Institute of Scientific and Technical Information of China (English)

    B. Subba Reddy; G. R. Nagabhushana

    2003-01-01

    This paper presents the results of the study concerning to the leakage current be-haviour on artificially polluted ceramic insulator surface. From the present study it was observedthat there is a reasonably well-defined inception of current i.e. scintillations at a finite voltage.The corresponding voltages for extinction of the current are in the range of 0.8 kV to 2.1 kV.Obviously, the dry band formed in the immediate vicinity of the pin prevents smooth current flowas the voltage rises from zero. Only when the voltage is adequate it causes a flashover of the dryband and current starts flowing. As is common in similar current extinction phenomena, herealso, the extinction voltages are significantly lower than the inception voltages.Further, the voltage-current curves invariably show hysteresis - the leakage currents are lowerin the reducing portion of the voltage. This is obviously due to drying of the wet pollutantlayer thereby increasing its resistance. It is believed that this is the first time that such a directquantitative evidence of drying in individual half cycles is experimentally visualized.

  7. A 200 mV low leakage current subthreshold SRAM bitcell in a 130 nm CMOS process

    Science.gov (United States)

    Na, Bai; Baitao, Lü

    2012-06-01

    A low leakage current subthreshold SRAM in 130 nm CMOS technology is proposed for ultra low voltage (200 mV) applications. Almost all of the previous subthreshold works ignore the leakage current in both active and standby modes. To minimize leakage, a self-adaptive leakage cut off scheme is adopted in the proposed design without any extra dynamic energy dissipation or performance penalty. Combined with buffering circuit and reconfigurable operation, the proposed design ensures both read and standby stability without deteriorating writability in the subthreshold region. Compared to the referenced subthreshold SRAM bitcell, the proposed bitcell shows: (1) a better critical state noise margin, and (2) smaller leakage current in both active and standby modes. Measurement results show that the proposed SRAM functions well at a 200 mV supply voltage with 0.13 μW power consumption at 138 kHz frequency.

  8. Low dislocation density InAlN/AlN/GaN heterostructures grown on GaN substrates and the effects on gate leakage characteristics

    Science.gov (United States)

    Kotani, Junji; Yamada, Atsushi; Ishiguro, Tetsuro; Tomabechi, Shuichi; Nakamura, Norikazu

    2016-04-01

    This paper reports on the electrical characterization of Ni/Au Schottky diodes fabricated on InAlN high-electron-mobility transistor (HEMT) structures grown on low dislocation density free-standing GaN substrates. InAlN HEMT structures were grown on sapphire and GaN substrates by metal-organic vapor phase epitaxy, and the effects of threading dislocation density on the leakage characteristics of Ni/Au Schottky diodes were investigated. Threading dislocation densities were determined to be 1.8 × 104 cm-2 and 1.2 × 109 cm-2 by the cathodoluminescence measurement for the HEMT structures grown on GaN and sapphire substrates, respectively. Leakage characteristics of Ni/Au Schottky diodes were compared between the two samples, and a reduction of the leakage current of about three to four orders of magnitude was observed in the forward bias region. For the high reverse bias region, however, no significant improvement was confirmed. We believe that the leakage current in the low bias region is governed by a dislocation-related Frenkel-Poole emission, and the leakage current in the high reverse bias region originates from field emission due to the large internal electric field in the InAlN barrier layer. Our results demonstrated that the reduction of dislocation density is effective in reducing leakage current in the low bias region. At the same time, it was also revealed that another approach will be needed, for instance, band modulation by impurity doping and insertion of insulating layers beneath the gate electrodes for a substantial reduction of the gate leakage current.

  9. A Leakage Current-based Measurement of the Radiation Damage in the ATLAS Pixel Detector

    CERN Document Server

    Gorelov, Igor; The ATLAS collaboration

    2015-01-01

    A measurement has been made of the radiation damage incurred by the ATLAS Pixel Detector barrel silicon modules from the beginning of operations through the end of 2012. This translates to hadronic fluence received over the full period of operation at energies up to and including 8 TeV. The measurement is based on a per-module measurement of the silicon sensor leakage current. The results are presented as a function of integrated luminosity and compared to predictions by the Hamburg Model. This information can be used to predict limits on the lifetime of the Pixel Detector due to current, for various operating scenarios.

  10. Relationship between crystal defects and leakage current in β-Ga2O3 Schottky barrier diodes

    Science.gov (United States)

    Kasu, Makoto; Hanada, Kenji; Moribayashi, Tomoya; Hashiguchi, Akihiro; Oshima, Takayoshi; Oishi, Toshiyuki; Koshi, Kimiyoshi; Sasaki, Kohei; Kuramata, Akito; Ueda, Osamu

    2016-12-01

    We fabricated Schottky barrier diodes (SBDs) on the entire surface of a (0\\bar{1}0) β-Ga2O3 single crystal, and investigated the leakage current in both forward and reverse directions. Subsequently, we investigated the distribution of dislocation and void etch pits on the entire surface. The dislocation etch pit density on the surface ranged from void etch pit density on the surface ranged from void etch pit densities, we found that dislocations are closely related to the SBD reverse leakage current, and that not all voids produce the leakage current.

  11. The Thermal Performance and Air Leakage Characteristics of Six Log Homes in Idaho.

    Energy Technology Data Exchange (ETDEWEB)

    Roos, Carolyn; Eklund, Ken; Baylon, David

    1993-08-01

    The thermal performance and air leakage characteristics of four electrically heated log houses located in Idaho are summarized. The air leakage and construction characteristics of two additional log homes are also examined. The energy consumption of the four homes was submetered at weekly reporting intervals for up to 16 months. Blower door tests and site audits were performed. In addition, conditions at two of these homes, including heat flux through the log walls, indoor and outdoor temperatures, solar flux and envelope tightness, were measured in detail over several days during winter conditions. The energy use and thermal performance of these two homes were then modeled using SUNCODE-PC, an hourly thermal simulation program employing a finite difference technique.

  12. Study of surface leakage current of AlGaN/GaN high electron mobility transistors

    Energy Technology Data Exchange (ETDEWEB)

    Chen, YongHe; Zhang, Kai; Cao, MengYi; Zhao, ShengLei; Zhang, JinCheng; Hao, Yue, E-mail: yhao@xidian.edu.cn [Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi' an 710071 (China); Ma, XiaoHua, E-mail: xhma@xidian.edu.cn [Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi' an 710071 (China); School of Advanced Materials and Nanotechnology, Xidian University, Xi' an 710071 (China)

    2014-04-14

    Temperature-dependent surface current measurements were performed to analyze the mechanism of surface conductance of AlGaN/GaN channel high-electron-mobility transistors by utilizing process-optimized double gate structures. Different temperatures and electric field dependence have been found in surface current measurements. At low electric field, the mechanism of surface conductance is considered to be two-dimensional variable range hopping. At elevated electric field, the Frenkel–Poole trap assisted emission governs the main surface electrons transportation. The extracted energy barrier height of electrons emitting from trapped state near Fermi energy level into a threading dislocations-related continuum state is 0.38 eV. SiN passivation reduces the surface leakage current by two order of magnitude and nearly 4 orders of magnitude at low and high electric fields, respectively. SiN also suppresses the Frenkel–Poole conductance at high temperature by improving the surface states of AlGaN/GaN. A surface treatment process has been introduced to further suppress the surface leakage current at high temperature and high field, which results in a decrease in surface current of almost 3 orders of magnitude at 476 K.

  13. Current leakage relaxation and charge trapping in ultra-porous low-k materials

    Energy Technology Data Exchange (ETDEWEB)

    Borja, Juan; Plawsky, Joel L., E-mail: plawsky@rpi.edu; Gill, William N. [Howard P. Isermann Department of Chemical and Biological Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States); Lu, T.-M. [Department of Physics, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States); Bakhru, Hassaram [University at Albany' s College of Nanoscale Science and Engineering (CNSE), Albany, New York 12203 (United States)

    2014-02-28

    Time dependent dielectric failure has become a pivotal aspect of interconnect design as industry pursues integration of sub-22 nm process-technology nodes. Literature has provided key information about the role played by individual species such as electrons, holes, ions, and neutral impurity atoms. However, no mechanism has been shown to describe how such species interact and influence failure. Current leakage relaxation in low-k dielectrics was studied using bipolar field experiments to gain insight into how charge carrier flow becomes impeded by defects within the dielectric matrix. Leakage current decay was correlated to injection and trapping of electrons. We show that current relaxation upon inversion of the applied field can be described by the stretched exponential function. The kinetics of charge trapping events are consistent with a time-dependent reaction rate constant, k=k{sub 0}⋅(t+1){sup β−1}, where 0 < β < 1. Such dynamics have previously been observed in studies of charge trapping reactions in amorphous solids by W. H. Hamill and K. Funabashi, Phys. Rev. B 16, 5523–5527 (1977). We explain the relaxation process in charge trapping events by introducing a nonlinear charge trapping model. This model provides a description on the manner in which the transport of mobile defects affects the long-tail current relaxation processes in low-k films.

  14. Current leakage relaxation and charge trapping in ultra-porous low-k materials

    Science.gov (United States)

    Borja, Juan; Plawsky, Joel L.; Lu, T.-M.; Bakhru, Hassaram; Gill, William N.

    2014-02-01

    Time dependent dielectric failure has become a pivotal aspect of interconnect design as industry pursues integration of sub-22 nm process-technology nodes. Literature has provided key information about the role played by individual species such as electrons, holes, ions, and neutral impurity atoms. However, no mechanism has been shown to describe how such species interact and influence failure. Current leakage relaxation in low-k dielectrics was studied using bipolar field experiments to gain insight into how charge carrier flow becomes impeded by defects within the dielectric matrix. Leakage current decay was correlated to injection and trapping of electrons. We show that current relaxation upon inversion of the applied field can be described by the stretched exponential function. The kinetics of charge trapping events are consistent with a time-dependent reaction rate constant, k =k0ṡ(t+1)β -1, where 0 < β < 1. Such dynamics have previously been observed in studies of charge trapping reactions in amorphous solids by W. H. Hamill and K. Funabashi, Phys. Rev. B 16, 5523-5527 (1977). We explain the relaxation process in charge trapping events by introducing a nonlinear charge trapping model. This model provides a description on the manner in which the transport of mobile defects affects the long-tail current relaxation processes in low-k films.

  15. Leakage Current Paths in PV Transformer-Less Single-Phase Inverter Topology and Its Mitigation through PWM for Switching

    Directory of Open Access Journals (Sweden)

    M. N. H. Khan

    2015-03-01

    Full Text Available The Photovoltaic (PV is a part and parcel and well known for cost-effective and easy to operatefeatures when it is used with transformer-less inverter-based grid-tied distribution generation systems. It reduces the leakage current issue that actually occurs making paths from PV penal to ground. In this paper has been addressed this issue as main problem for reducing leakage current. Moreover, here iscompared the proposed topology’s results to AC and DC-based transformer-less topologies. The possibilities of larger number of leakage current paths indicatepower loss, which is the focus of work in this paper for different switching conditions. The results on leakage current paths using PSpice with different parasitic capacitance values from inverters of different topologies are compared with the simulation results of the topology proposed in this paper.

  16. Study on the effect of humidity and dust on leakage current of bulk micro-MEGAS detector

    CERN Document Server

    Wang, Bo; Qi, Hui-Rong; Liu, Jing; Zhang, Xin-Shuai; Zhang, Tian-Chong; Yi, Fu-Ting; Ou-Yang, Qun; Chen, Yuan-Bo

    2013-01-01

    In this paper, the effect of humidity and dust trapped in avalanche region on leakage current of bulk micro-MEGAS detector is studied. Pyralux PC1025 layers of DuPont are introduced in bulk technique and micro-MEGAS detector with pillars of 300{\\mu}m in diameter is fabricated. Leakage current is tested in air with different humidity. Silicon carbide powder and PMMA (polymethyl methacrylate) powder are added as dust to avalanche region. Leakage current with and without powder is tested in air and results are depicted in the same figure. Test results indicate that leakage current increases with both storage humidity and test humidity, and also increases when powder is introduced in avalanche region.

  17. Accurate and fast table look-up models for leakage current analysis in 65 nm CMOS technology

    Institute of Scientific and Technical Information of China (English)

    薛冀颖; 李涛; 余志平

    2009-01-01

    Novel physical models for leakage current analysis in 65 nm technology are proposed. Taking into con-sideration the process variations and emerging effects in nano-scaled technology, the presented models are capable of accurately estimating the subthreshold leakage current and junction tunneling leakage current in 65 nm technol-ogy. Based on the physical models, new table look-up models are developed and first applied to leakage current analysis in pursuit of higher simulation speed. Simulation results show that the novel physical models are in ex-cellent agreement with the data measured from the foundry in the 65 nm process, and the proposed table look-up models can provide great computational efficiency by using suitable interpolation techniques. Compared with the traditional physical-based models, the table look-up models can achieve 2.5X speedup on average on a variety of industry circuits.

  18. Managing Bias Leakage Currents and High Data Rates in the BABAR Silicon Vertex Tracker

    CERN Document Server

    Garra-Tico, J; Bondioli, M; Bruinsma, M; Curry, S; Kirkby, D; Burke, S; Callahan, D; Campagnari, C; Cunha, A; Hale, D; Kyre, S; Richman, J; Beck, T; Eisner, A M; Kroseberg, J; Lockman, W S; Nesom, G; Seiden, A; Spradlin, P; Winstrom, L; Brown, D; Dardin, S; Goozen, F; Kerth, L T; Lynch, G; Roe, N A; Anderson, J; Chen, C; Lae, C K; Roberts, D; Simi, G; Tuggle, J; Lazzaro, A; Lombardo, V; Palombo, F; Ratti, L; Angelini, C; Batignani, G; Bettarini, S; Bosi, F; Bucci, F; Calderini, G; Carpinelli, M; Ceccanti, M; Cenci, R; Cervelli, A; Forti, F; Giorgi, M A; Lusiani, A; Mammini, P; Manfredi, P F; Marchiori, G; Mazur, M; Morganti, M; Morsani, F; Neri, N; Paoloni, E; Profeti, A; Rama, M; Rizzo, G; Walsh, J; Elmer, P; Long, O; Charles, E; Perazzo, A; Burchat, P; Edwards, A J; Miyashita, T S; Majewski, S; Petersen, B A; Bona, M; Bianchi, F; Gamba, D; Trapani, P; Bomben, M; Bosisio, L; Cartaro, C; Dittongo, S; Lanceri, L; Vitale, L; Azzolini, V; Lopez-March, N; Gao, Y Y; Gritsan, A V; Guo, Z J

    2008-01-01

    The silicon vertex tracker at the BABAR experiment is the primary device used in measuring the distance between B0 and meson decay vertices for the extraction of CP asymmetries. It consists of five layers of double-sided, AC-coupled silicon modules, read out by custom integrated circuits. It has run well consistently for eight years. I report on three years of experience in managing problematic bias leakage currents in the fourth layer. In addition, I report on recent success in decreasing the data acquisition time by reducing the readout window.

  19. Performance characteristics of low-dissipative generalized Carnot cycles with external leakage losses

    Institute of Scientific and Technical Information of China (English)

    黄传昆; 郭君诚; 陈金灿

    2015-01-01

    Under the assumption of low-dissipation, a unified model of generalized Carnot cycles with external leakage losses is established. Analytical expressions for the power output and efficiency are derived. The general performance characteristics between the power output and the efficiency are revealed. The maximum power output and efficiency are calculated. The lower and upper bounds of the efficiency at the maximum power output are determined. The results obtained here are universal and can be directly used to reveal the performance characteristics of different Carnot cycles, such as Carnot heat engines, Carnot-like heat engines, flux flow engines, gravitational engines, chemical engines, two-level quantum engines, etc.

  20. The Research of Through-casing Resistivity Logging Logging Calibration System Leakage Current Measurement Method

    Directory of Open Access Journals (Sweden)

    ZHANG Jiatian

    2013-07-01

    Full Text Available This paper introduces the logging principle of through-casing resistivity logging technology, finds a phenomenon that the leakage current measurements are susceptible to sufferring interferences. The through-casing resistivity logging technology in Russia and that of Schlumberger are studied, and the system of through-casing resistivity logging is established to improve the accuracy of calibrating, testing and measuring of the instrument. In this paper, distribution parameters of the form is replaced by the lumped parameter, and precision resistor array simulation in formation leakage current and scale pool simulation in different resistivity of formation are conducted, which make the dynamic range of the simulation in formation resistivity of the medium increase to 1- 300 Ω·m and meet the requirement of through-casing resistivity logging technology measurement range, 1 Ω·m ~ 100 Ω·m. Since the measuring signals of calibration acquisition and processing systems are extremely weak and calculation signals need to tell the nV (nanovolts level, the high accurate data acquisition system of 24 digits is applied.

  1. Methods for rapid frequency-domain characterization of leakage currents in silicon nanowire-based field-effect transistors

    Directory of Open Access Journals (Sweden)

    Tomi Roinila

    2014-07-01

    Full Text Available Silicon nanowire-based field-effect transistors (SiNW FETs have demonstrated the ability of ultrasensitive detection of a wide range of biological and chemical targets. The detection is based on the variation of the conductance of a nanowire channel, which is caused by the target substance. This is seen in the voltage–current behavior between the drain and source. Some current, known as leakage current, flows between the gate and drain, and affects the current between the drain and source. Studies have shown that leakage current is frequency dependent. Measurements of such frequency characteristics can provide valuable tools in validating the functionality of the used transistor. The measurements can also be an advantage in developing new detection technologies utilizing SiNW FETs. The frequency-domain responses can be measured by using a commercial sine-sweep-based network analyzer. However, because the analyzer takes a long time, it effectively prevents the development of most practical applications. Another problem with the method is that in order to produce sinusoids the signal generator has to cope with a large number of signal levels. This may become challenging in developing low-cost applications. This paper presents fast, cost-effective frequency-domain methods with which to obtain the responses within seconds. The inverse-repeat binary sequence (IRS is applied and the admittance spectroscopy between the drain and source is computed through Fourier methods. The methods is verified by experimental measurements from an n-type SiNW FET.

  2. Intrinsic leakage and adsorption currents associated with the electrocaloric effect in multilayer capacitors

    Science.gov (United States)

    Quintero, M.; Gaztañaga, P.; Irurzun, I.

    2015-10-01

    During the last few years, the increasing demand of energy for refrigeration applications has relived the interest of the scientific community in the study of alternative methods to the traditional gas-based refrigeration. Within this framework, the use of solid state refrigeration based on the electrocaloric effect reveals itself as one of the most promising technologies. In this work, we analyze how the temperature change associated with the electrocaloric effect shows a correlation with the electrical properties of a commercial multilayer capacitor. In that sense, we established a clear relation between the adsorption currents and the temperature change produced by the electrocaloric effect. Additionally, intrinsic leakage currents are responsible for the sample heating due to the Joule effect. These well distinguished contributions can be useful during the design of solid state refrigeration devices based on the electrocaloric effect.

  3. Optimization of process parameter variations on leakage current in in silicon-oninsulator vertical double gate mosfet device

    Directory of Open Access Journals (Sweden)

    K.E. Kaharudin

    2015-12-01

    Full Text Available This paper presents a study of optimizing input process parameters on leakage current (IOFF in silicon-on-insulator (SOI Vertical Double-Gate,Metal Oxide Field-Effect-Transistor (MOSFET by using L36 Taguchi method. The performance of SOI Vertical DG-MOSFET device is evaluated in terms of its lowest leakage current (IOFF value. An orthogonal array, main effects, signal-to-noise ratio (SNR and analysis of variance (ANOVA are utilized in order to analyze the effect of input process parameter variation on leakage current (IOFF. Based on the results, the minimum leakage current ((IOFF of SOI Vertical DG-MOSFET is observed to be 0.009 nA/µm or 9 ρA/µm while keeping the drive current (ION value at 434 µA/µm. Both the drive current (ION and leakage current (IOFF values yield a higher ION/IOFF ratio (48.22 x 106 for low power consumption application. Meanwhile, polysilicon doping tilt angle and polysilicon doping energy are recognized as the most dominant factors with each of the contributing factor effects percentage of 59% and 25%.

  4. New Leakage Current Particulate Matter Sensor for On-Board Diagnostics

    Directory of Open Access Journals (Sweden)

    Jiawei Wang

    2016-01-01

    Full Text Available Structure and principle of the new leakage current particulate matter (PM sensor are introduced and further study is performed on the PM sensor with the combination of numerical simulation and bench test. High voltage electrode, conductive shell, and heaters are all built-in. Based on the principle of Venturi tube and maze structure design, this sensor can detect transient PM concentrations. Internal flow field of the sensor and distribution condition of PM inside the sensor are analyzed through gas-solid two-phase flow numerical simulation. The experiment was also carried out on the whole sensor system (including mechanical and electronic circuit part and the output signals were analyzed. The results of simulation and experiment reveal the possibility of PM concentration (mass detection by the sensor.

  5. Leakage current mechanisms and their dependence on composition in silicon carbonitride thin films

    Science.gov (United States)

    Vijayakumar, Vishnuvardhanan; Varadarajan, Bhadri

    2015-04-01

    Electrical conduction in amorphous silicon carbonitride (a-SiCN:H) thin films deposited by plasma enhanced chemical vapor deposition (PECVD) is investigated for varying carbon to nitrogen ratios at room temperature. Films deposited with a lower carbon/nitrogen ratio showed two modes of electrical conduction; namely, Schottky emission mode below 2.3 MV cm-1 electric field and Poole-Frenkel mode from 2.3 MV cm-1 up to the breakdown field. Films with higher carbon/nitrogen ratios showed only Poole-Frenkel mode of conduction throughout the entire range of operation up to the breakdown field. The carbon rich films exhibited higher leakage currents attributed to its shallow defect energy levels leading to its higher Poole-Frenkel conductivity.

  6. Novel palladium germanide schottky contact for high performance schottky barrier ge MOSFETs and characterization of its leakage current mechanism.

    Science.gov (United States)

    Oh, Se-Kyung; Shin, Hong-Sik; Kang, Min-Ho; Lee, Ga-Won; Lee, Hi-Deok

    2012-07-01

    The leakage current mechanism of Palladium (Pd) germanide Schottky contact on n-type Ge-on-Si substrate is analyzed in depth. The electric field dependent analysis shows that the dominant leakage current mechanism is the Poole-Frenkel emission due to the existence of deep level traps in the depletion region of the Pd germanide/n-type Ge Schottky diode. The analysis of the dependence of leakage current on temperature also shows that the Poole-Frenkel emission and generation current are the dominant components below 100 degrees C and that the Schottky emission related to thermionic emission of majority carriers over a potential barrier is the main cause of this dominance at high temperature region.

  7. Theoretical study of the source-drain current and gate leakage current to understand the graphene field-effect transistors.

    Science.gov (United States)

    Yu, Cui; Liu, Hongmei; Ni, Wenbin; Gao, Nengyue; Zhao, Jianwei; Zhang, Haoli

    2011-02-28

    We designed acene molecules attached to two semi-infinite metallic electrodes to explore the source-drain current of graphene and the gate leakage current of the gate dielectric material in the field-effect transistors (FETs) device using the first-principles density functional theory combined with the non-equilibrium Green's function formalism. In the acene-based molecular junctions, we modify the connection position of the thiol group at one side, forming different electron transport routes. The electron transport routes besides the shortest one are defined as the cross channels. The simulation results indicate that electron transport through the cross channels is as efficient as that through the shortest one, since the conductance is weakly dependent on the distance. Thus, it is possible to connect the graphene with multiple leads, leading the graphene as a channel utilized in the graphene-based FETs in the mesoscopic system. When the conjugation of the cross channel is blocked, the junction conductance decreases dramatically. The differential conductance of the BA-1 is nearly 7 (54.57 μS) times as large as that of the BA-4 (7.35 μS) at zero bias. Therefore, the blocked graphene can be employed as the gate dielectric material in the top-gated graphene FET device, since the leakage current is small. The graphene-based field-effect transistors fabricated with a single layer of graphene as the channel and the blocked graphene as the gate dielectric material represent one way to overcome the problem of miniaturization which faces the new generation of transistors.

  8. Performance characteristics of low-dissipative generalized Carnot cycles with external leakage losses

    Science.gov (United States)

    Huang, Chuan-Kun; Guo, Jun-Cheng; Chen, Jin-Can

    2015-11-01

    Under the assumption of low-dissipation, a unified model of generalized Carnot cycles with external leakage losses is established. Analytical expressions for the power output and efficiency are derived. The general performance characteristics between the power output and the efficiency are revealed. The maximum power output and efficiency are calculated. The lower and upper bounds of the efficiency at the maximum power output are determined. The results obtained here are universal and can be directly used to reveal the performance characteristics of different Carnot cycles, such as Carnot heat engines, Carnot-like heat engines, flux flow engines, gravitational engines, chemical engines, two-level quantum engines, etc. Project supported by the Young Scientists Fund of the National Natural Science Foundation of China (Grant No. 11405032).

  9. Leakage Current Phenomenon on Ceramics and Epoxy Resin as 20 kV Outdoor Insulator at Tropical Environment

    Directory of Open Access Journals (Sweden)

    Valdi Rizki Yandri

    2011-01-01

    Full Text Available This paper explains the research results of  leakage current, hydrophobicity and flashover voltage comparison on ceramics and epoxy  resin 20 kV outdoor insulator in a  chamber at tropical climate conditions. The waveform of leakage current (LC was measured using a digital oscilloscope. The digital data was transferred to a personal computer using a RS-232 cable. The digital data was analyzed using Fast Fourier Transform. The result showed that LC was affected by various environment conditions like temperature, humidity and pollution. LC of ceramics insulator was higher than epoxy resin insulator in low temperature, high humidity and high pollution condition.

  10. Leakage current mechanisms of ultrathin high-k Er{sub 2}O{sub 3} gate dielectric film

    Energy Technology Data Exchange (ETDEWEB)

    Wu Deqi; Yao Jincheng; Zhao Hongsheng; Chang Aimin; Li Feng, E-mail: changam@ms.xjb.ac.c [Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011 (China)

    2009-10-15

    A series of high dielectric material Er{sub 2}O{sub 3} thin films with different thicknesses were deposited on p-type Si (100) substrate by pulse laser deposition at different temperatures. Phase structures of the films were determined by means of X-ray diffraction (XRD) and high resolution transmission electron microscopy (HRTEM). Leakage current density was measured with an HP4142B semiconductor parameter analyzer. The XRD and HRTEM results reveal that Er{sub 2}O{sub 3} thin films deposited below 400 {sup 0}C are amorphous, while films deposited from 400 to 840 {sup 0} are well crystallized with (111)-preferential crystallographic orientation. I-V curves show that, for ultrathin crystalline Er{sub 2}O{sub 3} films, the leakage current density increases by almost one order of magnitude from 6.20 x 10{sup -5} to 6.56 x 10{sup -4} A/cm{sup 2}, when the film thickness decreases by only 1.9 nm from 5.7 to 3.8 nm. However the leakage current density of ultrathin amorphous Er{sub 2}O{sub 3} films with a thickness of 3.8 nm is only 1.73 x 10{sup -5} A/cm{sup 2}. Finally, analysis of leakage current density showed that leakage of ultrathin Er{sub 2}O{sub 3} films at high field is mainly caused by Fowler-Nordheim tunneling, and the large leakage of ultrathin crystalline Er{sub 2}O{sub 3} films could arise from impurity defects at the grain boundary.

  11. A physical model for the reverse leakage current in (In,Ga)N/GaN light-emitting diodes based on nanowires

    Science.gov (United States)

    Musolino, M.; van Treeck, D.; Tahraoui, A.; Scarparo, L.; De Santi, C.; Meneghini, M.; Zanoni, E.; Geelhaar, L.; Riechert, H.

    2016-01-01

    We investigated the origin of the high reverse leakage current in light emitting diodes (LEDs) based on (In,Ga)N/GaN nanowire (NW) ensembles grown by molecular beam epitaxy on Si substrates. To this end, capacitance deep level transient spectroscopy (DLTS) and temperature-dependent current-voltage (I-V) measurements were performed on a fully processed NW-LED. The DLTS measurements reveal the presence of two distinct electron traps with high concentrations in the depletion region of the p-i-n junction. These band gap states are located at energies of 570 ± 20 and 840 ± 30 meV below the conduction band minimum. The physical origin of these deep level states is discussed. The temperature-dependent I-V characteristics, acquired between 83 and 403 K, show that different conduction mechanisms cause the observed leakage current. On the basis of all these results, we developed a quantitative physical model for charge transport in the reverse bias regime. By taking into account the mutual interaction of variable range hopping and electron emission from Coulombic trap states, with the latter being described by phonon-assisted tunnelling and the Poole-Frenkel effect, we can model the experimental I-V curves in the entire range of temperatures with a consistent set of parameters. Our model should be applicable to planar GaN-based LEDs as well. Furthermore, possible approaches to decrease the leakage current in NW-LEDs are proposed.

  12. PVD grown high-k SrTiO{sub 3} for capacitor applications: reliability and leakage current behavior

    Energy Technology Data Exchange (ETDEWEB)

    Kupke, Steve; Schroeder, Uwe; Knebel, Steve; Mikolajick, Thomas [NaMLab gGmbH, Noethnitzer Strasse 64, D-01187 Dresden (Germany); Schmelzer, Sebastian; Boettger, Ulrich [Institut fuer Werkstoffe der Elektrotechnik 2, RWTH, Aachen University, Sommerfeldstrasse 24, D-52074 Aachen (Germany)

    2011-07-01

    Low rate rf-sputtering was used to grow a 12 nm SrRuO{sub 3}/SrTiO{sub 3}/ SrRuO{sub 3} thin film capacitor with high dielectric constant and low leakage current behavior. Leakage current analysis and time dependent dielectric breakdown (TDDB) measurements as a function of temperature were performed. Poole-Frenkel emission and trap assisted tunneling were found to explain the leakage current behavior at different electric field ranges. Shallow trap levels between 0.75-0.85 eV below the conduction band were found whereas at higher temperatures conduction is governed by deeper traps at 1.2 eV. Constant voltage stress (CVS) measurements indicate that electron trapping is predominant and stress induced leakage current occurs before hard breakdown. Based on the Weibull model a projected lifetime of several years was obtained at product conditions. The high lifetime in combination with a high effective permittivity of approximately 200 making it a promising candidate for future DRAM applications.

  13. Eliminating leakage current in voltage-controlled exchange-bias devices

    Science.gov (United States)

    Mahmood, Ather; Echtenkamp, Will; Street, Michael; Binek, Christian; Magnetic Heterostructures Team

    Manipulation of magnetism by electric field has drawn much attention due to the technological importance for low-power devices, and for understanding fundamental magnetoelectric phenomena. A manifestation of electrically controlled magnetism is voltage control of exchange bias (EB). Robust isothermal voltage control of EB was demonstrated near room temperature using a heterostructure of Co/Pd thin film and an exchange coupled single crystal of the antiferromagnetic Cr2O3 (Chromia). A major obstacle for EB in lithographically patterned Chromia based thin-film devices is to minimize the leakage currents at high electric fields (>10 kV/mm). By combining electrical measurements on patterned devices and conductive Atomic Force Microscopy of Chromia thin-films, we investigate the defects which form conducting paths impeding the application of sufficient voltage for demonstrating the isothermal EB switching in thin film heterostructures. Technological challenges in the device fabrication will be discussed. This project was supported by SRC through CNFD, an SRC-NRI Center, by C-SPIN, part of STARnet, and by the NSF through MRSEC Abstract DMR-0820521.

  14. Leakage current behaviors of Al/ZrO2/Al and Al/YSZ/Al devices

    Science.gov (United States)

    Yeh, Tsung-Her; Lin, Ruei-De; Cherng, Bo-Ruei; Cherng, Jyh-Shiarn

    2015-01-01

    The leakage current behaviors of Al/ZrO2/Al and Al/yttria stabilized zirconia (YSZ)/Al devices are investigated for resistive random access memory (RRAM) applications. A silicon oxide layer (450 nm) is first formed on a Si wafer by thermal oxidation. Onto it an Al bottom electrode (270 nm), a ZrO2 or YSZ nano-film (75 nm), and an Al top electrode (270 nm) are sequentially deposited by sputtering. These RRAM devices exhibit ohmic behaviors in the low-field region, while Schottky and Poole-Frenkel emissions take over in the high-field regions. Both the Schottky and trap barrier levels are decreased when monoclinic ZrO2 is replaced by cubic YSZ in the metal/oxide/metal structure. This is attributed not only to the higher symmetry crystal structure and lower binding energy of YSZ, but also to the formation of more oxygen vacancies and their re-distribution associated with yttria doping.

  15. 基于剩余电流和漏电阻抗的漏电保护方法的研究%Research on method of leakage current protection based on residual current and leakage impedance

    Institute of Scientific and Technical Information of China (English)

    蔡志远; 庞佳; 陈廷辉

    2011-01-01

    Shortage of residual current protection method which can not distinguish the signals caused by switching on the leakage current impedance from those by switching it off is analyzed according to residual current protection theory.A new method based on residual current and leakage current impedance is proposed, which distinguishes the two signals through metering that the real part of impedance is positive or negative, and it can theoretically eliminate the fault performance caused by residual current change due to cutting off leakage current impedance based on original residual current protection.Based on the trigonometric functions, a new method using two points in wave signal to figure out the vector is also proposed.The method is easy for programming and with which the vector parameter needed for computing the leakage impedance can be quickly gotten.%根据剩余电流的保护原理,分析了剩余电流保护中不能够区分由于投入漏电负载和切除漏电负载产生的漏电信号的缺陷,提出了一种基于剩余电流和漏电阻抗的保护方法.该方法通过观察漏电负载阻抗的实部正负特征来加以区分这两种信号,在原有的剩余电流保护方法的基础上,在理论上消除了切除漏电负载引起的剩余电流变化导致的误动作.提出了一种基于三角函数的两点法测定向量参数,易于编程化,能够快速地提取出计算漏电阻抗所需要的向量参数.

  16. Influence of the gate edge on the reverse leakage current of AlGaN/GaN HEMTs

    Directory of Open Access Journals (Sweden)

    YongHe Chen

    2015-09-01

    Full Text Available By comparing the Schottky diodes of different area and perimeter, reverse gate leakage current of AlGaN/GaN high mobility transistors (HEMT at gate bias beyond threshold voltage is studied. It is revealed that reverse current consists of area-related and perimeter-related current. An analytical model of electric field calculation is proposed to obtain the average electric field around the gate edge at high revers bias and estimate the effective range of edge leakage current. When the reverse bias increases, the increment of electric field is around the gate edge of a distance of ΔL, and perimeter-related gate edge current keeps increasing. By using the calculated electric field and the temperature-dependent current-voltage measurements, the edge gate leakage current mechanism is found to be Fowler-Nordheim tunneling at gate bias bellows -15V caused by the lateral extended depletion region induced barrier thinning. Effective range of edge current of Schottky diodes is about hundred to several hundred nano-meters, and is different in different shapes of Schottky diodes.

  17. GATE REPLACEMENT TECHNIQUE FOR REDUCING LEAKAGE CURRENT IN WALLACE TREE MULTIPLIER

    Directory of Open Access Journals (Sweden)

    Naveen Raman

    2013-01-01

    Full Text Available Leakage power has become more significant in the power dissipation of today’s CMOS circuits. This affects the portable battery operated devices directly. The multipliers are the main key for designing an energy efficient processor, where the multiplier design decides the digital signal processors efficiency. In this study gate replacement technique is used to reduce the leakage power in 4×4 Wallace tree multiplier architecture which has been designed by using one bit full adders. This technique replaces the gate which is at worst leakage state by a library gate .In this technique the actual output logic state is maintained in active mode. The main objective of our study is to calculate leakage power in 4×4 Wallace tree multiplier by applied gate replacement technique and it is compared with 4×4 Wallace tree full adder multiplier. The proposed method reduces 43% of leakage power in 4×4 Wallace tree multiplier.

  18. Spatio-temporal characteristics of Agulhas leakage: a model inter-comparison study

    CSIR Research Space (South Africa)

    Holton, L

    2016-05-01

    Full Text Available by a passive tracer method, 60 % of the magnitude of Agulhas leakage is captured and more than 80 % of its temporal fluctuations, suggesting that the method is appropriate for investigating the variability of Agulhas leakage. In all simulations but one...

  19. Study on leakage flow characteristics of radial inflow turbines at rotor tip clearance

    Institute of Scientific and Technical Information of China (English)

    2008-01-01

    Tip clearance leakage flow in a radial inflow turbine rotor for microturbines under the stage environment is investigated using a three-dimensional viscous flow simulation. The results indicate that the scraping flow caused by relative motion between casing and rotor tip, and the pressure difference between pressure side and suction side at rotor tip, play important roles in tip clearance leakage flow. The more the rotor tip speed increases and tip clearance height decreases, the more the scraping effect acts. Though the leakage velocity of tip clearance at midsection and exducer regions changes less when the rotor rotational speed is changing, the distance between passage vortex and rotor suction side varies in evidence. Main leakage flow rate of tip clearance takes place at region of exducer tip and some seal configurations will be quite effective for cutting leakage flow if these configurations are arranged over midsection and exducer of the radial inflow rotor.

  20. Study on leakage flow characteristics of radial inflow turbines at rotor tip clearance

    Institute of Scientific and Technical Information of China (English)

    DENG QingHua; NIU JiuFang; FENG ZhenPing

    2008-01-01

    Tip clearance leakage flow in a radial inflow turbine rotor for microturbines under the stage environment is investigated using a three-dimensional viscous flow simulation. The results indicate that the scraping flow caused by relative motion between casing and rotor tip, and the pressure difference between pressure side and suction side at rotor tip, play important roles in tip clearance leakage flow. The more the rotor tip speed increases and tip clearance height decreases, the more the scraping effect acta. Though the leakage velocity of tip clearance at midsection and exducer regions changes less when the rotor rotational speed is changing, the distance between passage vortex and rotor suction side varies in evidence. Main leakage flow rate of tip clearance takes place at region of exducer tip and some seal configurations will be quite effective for cutting leakage flow if these configurations are arranged over midsection and exducer of the radial inflow rotor.

  1. 脉冲漏磁检测中的涡流效应%Eddy Current Effect in Pulsed Magnetic Flux Leakage Testing

    Institute of Scientific and Technical Information of China (English)

    费骏骉; 左宪章; 田贵云; 张云; 张韬

    2012-01-01

    In order to comprehend the characteristic of eddy current effect in pulsed magnetic flux leakage testing, this paper lays the foundation to further analyze pulsed magnetic flux leakage testing signal, builds simulating model of finite element in pulsed magnetic flux leakage testing, observes the distribution of transient magnetic field and induced eddy current in the test and analyzes and studies the features of characteristic quantity of induced eddy current and influential factors. The result shows that transient magnetic field and induced eddy current overall correspond with skin effect and affect each other in pulsed magnetic flux leakage testing. Induced eddy current has the feature of shallow penetrating depth and strong induction. Peak time of eddy current density has relative stronger resolution on depth direction. Electrical conductivity and magnetic conductivity affect the penetrating depth of induced eddy current and resolution of peak time of density on depth direction; pulsed stimulating ascendant time constant only affects the penetrating depth of induced eddy current, not relevant to resolution of peak time of density on depth direction.%为了解脉冲漏磁检测中涡流效应的特点,奠定进一步分析脉冲漏磁检测信号的基础,建立了脉冲漏磁检测的有限元仿真模型,观察了检测中瞬态磁场和感生涡流的分布,分析了感生涡流特征量的特点及影响因素。结果表明,脉冲漏磁检测中,瞬态磁场和感生涡流总体上符合集肤效应并相互影响,其中感生涡流具有渗透深度浅、感应强度大的特点,涡流密度峰值时间在深度方向上有较强的分辨率。电导率和磁导率影响感生涡流的渗透深度和密度峰值时间在深度方向上的分辨率;脉冲激励上升时间常数只影响感生涡流的渗透深度,而和密度峰值时间在深度方向上的分辨率无关。

  2. High charge, low leakage tantalum powders

    Energy Technology Data Exchange (ETDEWEB)

    Schiele, E. K.; Manley Jr., R. V.; Rerat, C. F.

    1985-10-01

    Tantalum powders for electrolytic capacitors having improved electrical capacity and low direct current leakage characteristics are produced by the introduction of combinations of carbon, nitrogen and sulfur-containing materials.

  3. The analysis of leakage current in MIS Au/SiO{sub 2}/n-GaAs at room temperature

    Energy Technology Data Exchange (ETDEWEB)

    Altuntas, H., E-mail: altunhalit@gmail.com [Cankiri Karatekin University, Department of Physics, Faculty of Science (Turkey); Ozcelik, S. [Gazi University, Department of Physics, Faculty of Science (Turkey)

    2013-10-15

    The aim of this study is to determine the reverse-bias leakage current conduction mechanisms in Au/SiO{sub 2}/n-GaAs metal-insulator-semiconductor type Schottky contacts. Reverse-bias current-voltage measurements (I-V) were performed at room temperature. The using of leakage current values in SiO{sub 2} at electric fields of 1.46-3.53 MV/cm, ln(J/E) vs. {radical}E graph showed good linearity. Rom this plot, dielectric constant of SiO{sub 2} was calculated as 3.7 and this value is perfect agreement with 3.9 which is value of SiO{sub 2} dielectric constant. This indicates, Poole-Frenkel type emission mechanism is dominant in this field region. On the other hand, electric fields between 0.06-0.73 and 0.79-1.45 MV/cm, dominant leakage current mechanisms were found as ohmic type conduction and space charge limited conduction, respectively.

  4. Study of radiation-induced leakage current between adjacent devices in a CMOS integrated circuit

    Institute of Scientific and Technical Information of China (English)

    Ding Lili; Guo Hongxia; Chen Wei; Fan Ruyu

    2012-01-01

    Radiation-induced inter-device leakage is studied using an analytical model and TCAD simulation.There were some different opinions in understanding the process of defect build-up in trench oxide and parasitic leakage path turning on from earlier studies.To reanalyze this problem and make it beyond argument,every possible variable is considered using theoretical analysis,not just the change of electric field or oxide thickness independently.Among all possible inter-device leakage paths,parasitic structures with N-well as both drain and source are comparatively more sensitive to the total dose effect when a voltage discrepancy exists between the drain and source region.Since N-well regions are commonly connected to the same power supply,these kinds of structures will not be a problem in a real CMOS integrated circuit.Generally speaking,conduction paths of inter-device leakage existing in a real integrated circuit and under real electrical circumstances are not very sensitive to the total ionizing dose effect.

  5. Simulation and investigation of SiPM’s leakage currents at low voltages

    Science.gov (United States)

    Parygin, P. P.; Popova, E. V.; Grachev, V. M.

    2017-01-01

    Technology Computer-Aided Design (TCAD) allows us to use computers in order to develop semiconductor processing technologies and devices and optimize them. Within a framework of a study of silicon photomultipliers (SiPM) a simulation of these devices has been made. The simulation was performed for the irradiated SiPMs and current-voltage characteristics were obtained for the modeled devices. Investigation of current-voltage curve below breakdown with regard to the simulated structure was performed. Obtained curves are presented.

  6. The effect of guard ring on leakage current and spectroscopic performance of TlBr planar detectors

    Science.gov (United States)

    Kargar, Alireza; Kim, Hadong; Cirignano, Leonard; Shah, Kanai

    2014-09-01

    Four thallium bromide planar detectors were fabricated from materials grown at RMD Inc. The TlBr samples were prepared to investigate the effect of guard ring on device gamma-ray spectroscopy performance, and to investigate the leakage current through surface and bulk. The devices' active area in planar configuration were 4.4 × 4.4 × 1.0 mm3. In this report, the detector fabrication process is described and the resulting energy spectra are discussed. It is shown that the guard ring improves device spectroscopic performance by shielding the sensing electrode from the surface leakage current, and by making the electric filed more uniform in the active region of the device.

  7. TCAD analysis of the leakage current and breakdown versus temperature of GaN-on-Silicon vertical structures

    Science.gov (United States)

    Cornigli, Davide; Monti, Federico; Reggiani, Susanna; Gnani, Elena; Gnudi, Antonio; Baccarani, Giorgio

    2016-01-01

    A TCAD-based approach has been used to investigate the leakage current and breakdown regime of vertical GaN/AlGaN/Si structures at different ambient temperatures. TCAD modeling has been used to assess possible mechanisms of the forward-bias leakage current. A good agreement with experimental data has been obtained by implementing both trap-assisted and Poole-Frenkel conduction mechanisms into the deeper buffer layers, indicating that conduction is dominated by electron injection from silicon into a continuum of states at a given energy offset in the transition layer, which might be associated with conductive dislocation defects. The latter mechanisms have been proven to anticipate the onset of breakdown at high temperatures.

  8. Evaluation of Information Leakage from Cryptographic Hardware via Common-Mode Current

    Science.gov (United States)

    Hayashi, Yu-Ichi; Homma, Naofumi; Mizuki, Takaaki; Sugawara, Takeshi; Kayano, Yoshiki; Aoki, Takafumi; Minegishi, Shigeki; Satoh, Akashi; Sone, Hideaki; Inoue, Hiroshi

    This paper presents a possibility of Electromagnetic (EM) analysis against cryptographic modules outside their security boundaries. The mechanism behind the information leakage is explained from the view point of Electromagnetic Compatibility: electric fluctuation released from cryptographic modules can conduct to peripheral circuits based on ground bounce, resulting in radiation. We demonstrate the consequence of the mechanism through experiments where the ISO/IEC standard block cipher AES (Advanced Encryption Standard) is implemented on an FPGA board and EM radiations from power and communication cables are measured. Correlation Electromagnetic Analysis (CEMA) is conducted in order to evaluate the information leakage. The experimental results show that secret keys are revealed even though there are various disturbing factors such as voltage regulators and AC/DC converters between the target module and the measurement points. We also discuss information-suppression techniques as electrical-level countermeasures against such CEMAs.

  9. A physical model for the reverse leakage current in (In,Ga)N/GaN light-emitting diodes based on nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Musolino, M.; Treeck, D. van, E-mail: treeck@pdi-berlin.de; Tahraoui, A.; Geelhaar, L.; Riechert, H. [Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5–7, D-10117 Berlin (Germany); Scarparo, L.; De Santi, C.; Meneghini, M.; Zanoni, E. [Department of Information Engineering, University of Padova, Via Gradenigo 6/B, 35131 Padova (Italy)

    2016-01-28

    We investigated the origin of the high reverse leakage current in light emitting diodes (LEDs) based on (In,Ga)N/GaN nanowire (NW) ensembles grown by molecular beam epitaxy on Si substrates. To this end, capacitance deep level transient spectroscopy (DLTS) and temperature-dependent current-voltage (I-V) measurements were performed on a fully processed NW-LED. The DLTS measurements reveal the presence of two distinct electron traps with high concentrations in the depletion region of the p-i-n junction. These band gap states are located at energies of 570 ± 20 and 840 ± 30 meV below the conduction band minimum. The physical origin of these deep level states is discussed. The temperature-dependent I-V characteristics, acquired between 83 and 403 K, show that different conduction mechanisms cause the observed leakage current. On the basis of all these results, we developed a quantitative physical model for charge transport in the reverse bias regime. By taking into account the mutual interaction of variable range hopping and electron emission from Coulombic trap states, with the latter being described by phonon-assisted tunnelling and the Poole-Frenkel effect, we can model the experimental I-V curves in the entire range of temperatures with a consistent set of parameters. Our model should be applicable to planar GaN-based LEDs as well. Furthermore, possible approaches to decrease the leakage current in NW-LEDs are proposed.

  10. A new technique for measuring the leakage current in Silicon Drift Detector based X-ray spectrometer—implications for on-board calibration

    Science.gov (United States)

    Shanmugam, M.; Acharya, Y. B.; Vadawale, S. V.; Mazumdar, H. S.

    2015-02-01

    In this work, we report a new technique of measuring the leakage current in Silicon Drift Detectors (SDD) and propose to use this technique as a tool for on-board estimation of the radiation damage to the SDD employed in space-borne X-ray spectrometers. The leakage current of a silicon based detector varies with the detector operating temperature and increases with the radiation dose encountered by the detector in the space environment. The proposed technique to measure detector leakage current involves measurement of the reset frequency of the reset type charge sensitive pre-amplifier when the feedback capacitor is charged only due to the detector leakage current. Using this technique, the leakage current is measured for large samples of SDDs having two different active areas of 40 mm2 and 109 mm2 with 450 micron thick silicon. These measurements are carried out in the temperature range of -50°C to 20°C. At each step energy resolution is measured for all SDDs using Fe-55 X-ray source and shown that the energy resolution varies systematically with the leakage current irrespective of the difference among the detectors of the same as well as different sizes. Thus by measuring the leakage current on-board, it would be possible to estimate the time dependent performance degradation of the SDD based X-ray spectrometer. This can be particularly useful in case where large numbers of SDD are used.

  11. Gate leakage current reduction in IP3 SRAM cells at 45 nm CMOS technology for multimedia applications

    Institute of Scientific and Technical Information of China (English)

    R.K.Singh; Neeraj Kr.Shukla; Manisha Pattanaik

    2012-01-01

    We have presented an analysis of the gate leakage current of the IP3 static random access memory (SRAM) cell structure when the cell is in idle mode (performs no data read/write operations) and active mode (performs data read/write operations),along with the requirements for the overall standby leakage power,active write and read powers.A comparison has been drawn with existing SRAM cell structures,the conventional 6T,PP,P4 and P3 cells.At the supply voltage,VDD =0.8 V,a reduction of 98%,99%,92% and 94% is observed in the gate leakage current in comparison with the 6T,PP P4 and P3 SRAM cells,respectively,while at VDD =0.7 V,it is 97%,98%,87% and 84%.A significant reduction is also observed in the overall standby leakage power by 56%,the active write power by 44% and the active read power by 99%,compared with the conventional 6T SRAM cell at VDD =0.8 V,with no loss in cell stability and performance with a small area penalty.The simulation environment used for this work is 45 nm deep sub-micron complementary metal oxide semiconductor (CMOS) technology,tox =2.4 nm,Vthn =0.22 V,Vthp =0.224 V,VDD =0.7 V and 0.8 V,at T =300 K.

  12. Elevated temperature annealing of the neutron induced leakage current and corresponding defect levels in low and high resistivity silicon detectors

    Energy Technology Data Exchange (ETDEWEB)

    Eremin, V.; Ivanov, A.; Verbitskaya, E. [A.F. Ioffe Physico-Technical Institute of Academy of Sciences of Russia, St. Petersburg, (Russian Federation); Li, Z.; Kraner, H.W. [Brookhaven National Lab., Upton, NY (United States)

    1994-03-01

    The leakage current (I{sub L}) annealing at the elevated temperatures and the corresponding changes of the DLTS spectra of defects for fast neutron irradiated Silicon detectors, fabricated on high (4--6 k{Omega}-cm), moderate (0.5--1.0 k{Omega}-cm), and low(<100 {Omega}-cm) resistivity silicon material, have been investigated. For all the resistivities, three annealing stages have been observed: (1) The transformation of carbon related defects at 72{degree}C; (2) slight decrease of the peak E{sub c} {minus} 0.4 eV at 150{degree}C; and (3) significant decrease of the peak E{sub c} {minus} 0.4 eV at 350{degree}C. The leakage current has been found to decrease monotonously in the temperature range of 20--150{degree}C. A sharp decrease of I{sub L} was observed at 350 {degree}C due to the annealing of the V-V{sup {minus}} center for heavily irradiated detectors, whereas I{sub L} showed a slight saturation tendency for detectors irradiated to low neutron fluence. The V-V{sup {minus}} center has been found to be dominant in the formation of the E{sub c} {minus} 0.4 eV peak and in the annealing of the leakage current. For low resistivity detectors, an anneal at 72{degree}C was needed to stimulate the decrease of the effective impurity concentration (N{sub eff}) of the detectors irradiated by high neutron fluence (1--2) {times} 10{sup 14} n/cm{sup 2}. In addition, low resistivity detectors have been found to be tolerant in terms of N{sub eff} stability to the 350{degree}C anneal, favorable to the recovery of I{sub L} after irradiation with high neutron fluence.

  13. Magnetic, ferroelectric and leakage current properties of gadolinium doped bismuth ferrite thin films by sol–gel method

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Hone-Zern, E-mail: hzc@hust.edu.tw [Department of Electronic Engineering, Hsiuping University of Science and Technology, Taichung, Taiwan (China); Kao, Ming-Cheng, E-mail: kmc@hust.edu.tw [Department of Electronic Engineering, Hsiuping University of Science and Technology, Taichung, Taiwan (China); Young, San-Lin [Department of Electronic Engineering, Hsiuping University of Science and Technology, Taichung, Taiwan (China); Hwang, Jun-Dar [Department of Electrophysics, National Chiayi University, Chiayi, Taiwan (China); Chiang, Jung-Lung [Department of Mobile Technology, Toko University, Chiayi, Taiwan (China); Chen, Po-Yen [Department of Electronic Engineering, Hsiuping University of Science and Technology, Taichung, Taiwan (China)

    2015-05-01

    Bi{sub 0.9}Gd{sub 0.1}FeO{sub 3} (BGFO) thin films were fabricated on Pt(111)/Ti/SiO{sub 2}/Si(100) substrates by using the sol–gel technology. The effects of annealing temperature (400–700 °C) on microstructure and multiferroic properties of thin films were investigated. The X-ray diffraction analysis showed that the BGFO thin films had an orthorhombic structure. The thin films showed ferroelectric and ferromagnetic properties with remanent polarization (2P{sub r}) of 10 μC/cm{sup 2}, remnant magnetization (2M{sub r}) of 2.4 emu/g and saturation magnetization (M{sub s}) of 5.3 emu/g. A small leakage current density (J) was 4.64×10{sup −8} A/cm{sup 2} under applied field 100 kV/cm. It was found that more than one conduction mechanism is involved in the electric field range used in these experiments. The leakage current mechanisms were controlled by Poole–Frenkel emission in the low electric field region and by Schottky emission from the Pt electrode in the high field region. - Highlights: • Bi{sub 3.96}Pr{sub 0.04}Ti{sub 2.95}Nb{sub 0.05}O{sub 12} thin films were prepared by sol–gel technology. • Thin films showed 2P{sub r} of 10 μC/cm{sup 2}, 2M{sub r} of 2.4 emu/g and M{sub s} of 5.3 emu/g. • Leakage current mechanisms were controlled by Poole–Frenkel and Schottky emission.

  14. Sr and Mn co-doped sol-gel derived BiFeO3 ceramics with enhanced magnetism and reduced leakage current

    Science.gov (United States)

    Sharma, Nandni; Kumar, Sanjeev; Mall, Ashish Kumar; Gupta, Rajeev; Garg, Ashish

    2017-01-01

    In this manuscript, we report the effect of Sr and Mn doping on the electrical and magnetic characteristics of BiFeO3 nanoparticles, synthesized by sol-gel technique. While powder diffraction analysis of the samples suggested absence of any structural distortion in both Sr-doped and Sr and Mn co-doped BiFeO3 nanoparticles, Rietveld refinement of the data suggested that the unit cell volume decreases with doping. Room temperature Raman studies of the samples confirmed the incorporation of Sr and Mn in BiFeO3. It was seen that Sr doping of BiFeO3 showed substantial reduction in the leakage current whilst co-doping with Sr and Mn led to lower reduction in the leakage current through offering better performance over undoped BiFeO3, due to changes brought in the defect chemistry upon doping. Additionally, Sr and Mn co-doped BiFeO3 samples exhibit enhanced magnetization in comparison to undoped and Sr doped BiFeO3, possibly due to interruptions in the spin cycloid of BiFeO3.

  15. Research and development of a high-temperature helium-leak detection system (joint research). Part 1 survey on leakage events and current leak detection technology

    Energy Technology Data Exchange (ETDEWEB)

    Sakaba, Nariaki; Nakazawa, Toshio; Kawasaki, Kozo [Japan Atomic Energy Research Inst., Oarai, Ibaraki (Japan). Oarai Research Establishment; Urakami, Masao; Saisyu, Sadanori [Japan Atomic Power Co., Tokyo (Japan)

    2003-03-01

    In High Temperature Gas-cooled Reactors (HTGR), the detection of leakage of helium at an early stage is very important for the safety and stability of operations. Since helium is a colourless gas, it is generally difficult to identify the location and the amount of leakage when very little leakage has occurred. The purpose of this R and D is to develop a helium leak detection system for the high temperature environment appropriate to the HTGR. As the first step in the development, this paper describes the result of surveying leakage events at nuclear facilities inside and outside Japan and current gas leakage detection technology to adapt optical-fibre detection technology to HTGRs. (author)

  16. Transport mechanism of reverse surface leakage current in AlGaN/GaN high-electron mobility transistor with SiN passivation

    Institute of Scientific and Technical Information of China (English)

    郑雪峰; 张进成; 郝跃; 范爽; 陈永和; 康迪; 张建坤; 王冲; 默江辉; 李亮; 马晓华

    2015-01-01

    The transport mechanism of reverse surface leakage current in AlGaN/GaN high-electron mobility transistor (HEMT) becomes one of the most important reliability issues with the downscaling of feature size. In this paper, the research results show that the reverse surface leakage current in AlGaN/GaN HEMT with SiN passivation increases with the enhancement of temperature in a range from 298 K to 423 K. Three possible transport mechanisms are proposed and examined to explain the generation of reverse surface leakage current. By comparing the experimental data with the numerical transport models, it is found that neither Fowler–Nordheim tunneling nor Frenkel–Poole emission can describe the transport of reverse surface leakage current. However, good agreement is found between the experimental data and the two-dimensional variable range hopping (2D-VRH) model. Therefore, it is concluded that the reverse surface leakage current is dominated by the electron hopping through the surface states at barrier layer. Moreover, the activation energy of surface leakage current is extracted, which is around 0.083 eV. Finally, the SiN passivated HEMT with high Al composition and thin AlGaN barrier layer is also studied. It is observed that 2D-VRH still dominates the reverse surface leakage current and the activation energy is around 0.10 eV, which demonstrates that the alteration of AlGaN barrier layer does not affect the transport mechanism of reverse surface leakage current in this paper.

  17. ZnO varistors with high voltage gradient and low leakage current by doping rare-earthoxide

    Institute of Scientific and Technical Information of China (English)

    HE JinLiang; HU Jun; LIN YuanHua

    2008-01-01

    The surge arrester of 1000 kV gas-insulated substation (GIS) needs ZnO varistor with high voltage gradient to effectively improve the potential distribution along ZnO varistor column inside the metal-oxide surge arresters. In this paper, the elec-trical and structural parameters of ZnO varistors are changed by doping with some rare-earth oxides, and the mechanism which leads these changes is discussed. When rare-earth oxide additives are added into ZnO varistors, the growing speed is slowed down due to the stabilization of the new spinel phases formed in the grain-boundary by rare-earth oxide additives, then the size of ZnO grains is smaller, and the voltage gradient of varistor increases obviously. By adding suitable amount of oxides of metal Co and Mn, the leakage current can be effectively decreased and the nonlinearity coefficient increased. The novel ZnO varistor samples sintered with the optimal additives have a voltage gradient of 492 V/mm, and the nonlinearity coefficient of 76, but their leakage currents are only 1 μA.

  18. ZnO varistors with high voltage gradient and low leakage current by doping rare-earth oxide

    Institute of Scientific and Technical Information of China (English)

    2008-01-01

    The surge arrester of 1000 kV gas-insulated substation (GIS) needs ZnO varistor with high voltage gradient to effectively improve the potential distribution along ZnO varistor column inside the metal-oxide surge arresters. In this paper, the elec-trical and structural parameters of ZnO varistors are changed by doping with some rare-earth oxides, and the mechanism which leads these changes is discussed. When rare-earth oxide additives are added into ZnO varistors, the growing speed is slowed down due to the stabilization of the new spinel phases formed in the grain-boundary by rare-earth oxide additives, then the size of ZnO grains is smaller, and the voltage gradient of varistor increases obviously. By adding suitable amount of oxides of metal Co and Mn, the leakage current can be effectively decreased and the nonlinearity coefficient increased. The novel ZnO varistor samples sintered with the optimal additives have a voltage gradient of 492 V/mm, and the nonlinearity coefficient of 76, but their leakage currents are only 1 μA.

  19. Magnetic, ferroelectric and leakage current properties of gadolinium doped bismuth ferrite thin films by sol-gel method

    Science.gov (United States)

    Chen, Hone-Zern; Kao, Ming-Cheng; Young, San-Lin; Hwang, Jun-Dar; Chiang, Jung-Lung; Chen, Po-Yen

    2015-05-01

    Bi0.9Gd0.1FeO3 (BGFO) thin films were fabricated on Pt(111)/Ti/SiO2/Si(100) substrates by using the sol-gel technology. The effects of annealing temperature (400-700 °C) on microstructure and multiferroic properties of thin films were investigated. The X-ray diffraction analysis showed that the BGFO thin films had an orthorhombic structure. The thin films showed ferroelectric and ferromagnetic properties with remanent polarization (2Pr) of 10 μC/cm2, remnant magnetization (2Mr) of 2.4 emu/g and saturation magnetization (Ms) of 5.3 emu/g. A small leakage current density (J) was 4.64×10-8 A/cm2 under applied field 100 kV/cm. It was found that more than one conduction mechanism is involved in the electric field range used in these experiments. The leakage current mechanisms were controlled by Poole-Frenkel emission in the low electric field region and by Schottky emission from the Pt electrode in the high field region.

  20. Effect of surface roughness on leakage current and corrosion resistance of oxide layer on AZ91 Mg alloy prepared by plasma electrolytic oxidation

    Science.gov (United States)

    Yoo, Bongyoung; Shin, Ki Ryoung; Hwang, Duck Young; Lee, Dong Heon; Shin, Dong Hyuk

    2010-09-01

    The influence of the surface roughness of Mg alloys on the electrical properties and corrosion resistance of oxide layers obtained by plasma electrolytic oxidation (PEO) were studied. The leakage current in the insulating oxide layer was enhanced by increasing the surface roughness, which is a favorable characteristic for the material when applied to hand-held electronic devices. The variation of corrosion resistance with surface roughness was also investigated. The corrosion resistance was degraded by the increasing surface roughness, which was confirmed with DC polarization and impedance spectroscopy. Pitting corrosion on the passive oxide layer was also analyzed with a salt spray test, which showed that the number of pits was not affected by the surface roughness when the spray time reached 96 h.

  1. The conduction mechanism of stress induced leakage current through ultra-thin gate oxide under constant voltage stresses

    Institute of Scientific and Technical Information of China (English)

    Wang Yan-Gang; Xu Ming-Zhen; Tan Chang-Hua; Zhang Zhang J.F; Duan Xiao-Rong

    2005-01-01

    The conduction mechanism of stress induced leakage current (SILC) through 2nm gate oxide is studied over a gate voltage range between 1.7V and stress voltage under constant voltage stress (CVS). The simulation results show that the SILC is formed by trap-assisted tunnelling (TAT) process which is dominated by oxide traps induced by high field stresses. Their energy levels obtained by this work are approximately 1.9eV from the oxide conduction band, and the traps are believed to be the oxygen-related donor-like defects induced by high field stresses. The dependence of the trap density on stress time and oxide electric field is also investigated.

  2. Reduced leakage current and improved ferroelectricity in magneto-electric composite ceramics prepared with microwave assisted radiant hybrid sintering

    Directory of Open Access Journals (Sweden)

    Sanjay Kumar Upadhyay

    2015-04-01

    Full Text Available Structural, electrical and magnetic properties of magneto-electric composite ceramics viz., 0.9 BaTi0.95Sn0.05O3 (BTSO- 0.1 Ni0.8Zn0.2Fe2O4 (NZFO prepared with microwave assisted radiant hybrid sintering (MARH are reported. Phase purity and isovalent substitution of Ti4+ by Sn4+ of the samples is confirmed from x-ray diffraction and 119Sn Mossbauer measurements respectively. Significant suppression of leakage current and improvement of ferroelectricity is observed for the composites prepared with MARH. The observed results are explained in terms of uniform dispersion of ferrite (NZFO phase in the ferroelectric (BTSO matrix as evidenced from back-scattered scanning electron micrographs.

  3. Study of the tunnelling initiated leakage current through the carbon nanotube embedded gate oxide in metal oxide semiconductor structures

    Energy Technology Data Exchange (ETDEWEB)

    Chakraborty, Gargi; Sarkar, C K [Department of Electronics and Telecommunication Engineering, Jadavpur University, Kolkata (India); Lu, X B; Dai, J Y [Department of Applied Physics and Materials Research Center, Hong Kong Polytechnic University, Hong Kong (China)], E-mail: gargichakraborty0@yahoo.co.in, E-mail: phyhod@yahoo.co.in

    2008-06-25

    The tunnelling currents through the gate dielectric partly embedded with semiconducting single-wall carbon nanotubes in a silicon metal-oxide-semiconductor (MOS) structure have been investigated. The application of the gate voltage to such an MOS device results in the band bending at the interface of the partly embedded oxide dielectric and the surface of the silicon, initiating tunnelling through the gate oxide responsible for the gate leakage current whenever the thickness of the oxide is scaled. A model for silicon MOS structures, where carbon nanotubes are confined in a narrow layer embedded in the gate dielectric, is proposed to investigate the direct and the Fowler-Nordheim (FN) tunnelling currents of such systems. The idea of embedding such elements in the gate oxide is to assess the possibility for charge storage for memory device applications. Comparing the FN tunnelling onset voltage between the pure gate oxide and the gate oxide embedded with carbon nanotubes, it is found that the onset voltage decreases with the introduction of the nanotubes. The direct tunnelling current has also been studied at very low gate bias, for the thin oxide MOS structure which plays an important role in scaling down the MOS transistors. The FN tunnelling current has also been studied with varying nanotube diameter.

  4. A new regime of the Agulhas Current Retroflection: Turbulent Choking of Indian-Atlantic leakag

    NARCIS (Netherlands)

    le Bars, D.L.B.|info:eu-repo/dai/nl/326165150; de Ruijter, W.P.M.|info:eu-repo/dai/nl/068476760; Dijkstra, H.A.|info:eu-repo/dai/nl/073504467

    2012-01-01

    An analysis of the Indian Ocean circulation and the Agulhas Current retroflection is carried out using a primitive equation model with simplified coastline and flat bottom. Four configurations with 0.258 and 0.18 horizontal resolution and in barotropic and baroclinic cases are considered. The wind

  5. A new regime of the Agulhas Current Retroflection: Turbulent Choking of Indian-Atlantic leakag

    NARCIS (Netherlands)

    le Bars, D.L.B.; de Ruijter, W.P.M.; Dijkstra, H.A.

    2012-01-01

    An analysis of the Indian Ocean circulation and the Agulhas Current retroflection is carried out using a primitive equation model with simplified coastline and flat bottom. Four configurations with 0.258 and 0.18 horizontal resolution and in barotropic and baroclinic cases are considered. The wind s

  6. Leakage current conduction and reliability assessment of passivating thin silicon dioxide films on n-4H-SiC

    Science.gov (United States)

    Samanta, Piyas; Mandal, Krishna C.

    2016-09-01

    We have analyzed the mechanisms of leakage current conduction in passivating silicon dioxide (SiO2) films grown on (0 0 0 1) silicon (Si) face of n-type 4H-SiC (silicon carbide). It was observed that the experimentally measured gate current density in metal-oxide-silicon carbide (MOSiC) structures under positive gate bias at an oxide field Eox above 5 MV/cm is comprised of Fowler-Nordheim (FN) tunneling of electrons from the accumulated n-4H-SiC and Poole-Frenkel (PF) emission of trapped electrons from the localized neutral traps in the SiO2 gap, IFN and IPF, respectively at temperatures between 27 and 200 °C. In MOSiC structures, PF mechanism dominates FN tunneling of electrons from the accumulation layer of n-4H-SiC due to high density (up to 1013 cm-2) of carbon-related acceptor-like traps located at about 2.5 eV below the SiO2 conduction band (CB). These current conduction mechanisms were taken into account in studying hole injection/trapping into 10 nm-thick tunnel oxide on the Si face of 4H-SiC during electron injection from n-4H-SiC under high-field electrical stress with positive bias on the heavily doped n-type polysilicon (n+-polySi) gate at a wide range of temperatures between 27 and 200 °C. Holes were generated in the n+-polySi anode material by the hot-electrons during their transport through thin oxide films at oxide electric fields Eox from 5.6 to 8.0 MV/cm (prior to the intrinsic oxide breakdown field). Time-to-breakdown tBD of the gate dielectric was found to follow reciprocal field (1/E) model irrespective of stress temperatures. Despite the significant amount of process-induced interfacial electron traps contributing to a large amount of leakage current via PF emission in thermally grown SiO2 on the Si-face of n-4H-SiC, MOSiC devices having a 10 nm-thick SiO2 film can be safely used in 5 V TTL logic circuits over a period of 10 years.

  7. Analytical models for the 2DEG concentration and gate leakage current in AlGaN/GaN HEMTs

    Science.gov (United States)

    Ahmed, Nadim; Dutta, Aloke K.

    2017-06-01

    In this paper, we present a completely analytical model for the 2DEG concentration in AlGaN/GaN HEMTs as a function of gate bias, considering the donor-like trap states present at the metal/AlGaN interface to be the primary source of 2DEG carriers. To the best of our knowledge, this is a completely new contribution of this work. The electric field in the AlGaN layer is calculated using this model, which is further used to model the gate leakage current under reverse bias. We have modified the existing TTT (Thermionic Trap-Assisted Tunneling) current model, taking into account the effect of both metal/AlGaN interface traps as well as AlGaN bulk traps. The gate current under forward bias is also modeled using the existing thermionic emission model, approximating it by its Taylor series expansion. To take into account the effect of non-zero drain-source bias (VDS), an empirical fitting parameter is introduced in order to model the channel voltage in terms of VDS. The results of our models have been compared with the experimental data reported in the literature for three different devices, and the match is found to be excellent for both forward and reverse bias as well as for zero and non-zero VDS.

  8. Quantitative analysis of SILCs (stress-induced leakage currents) based on the inelastic trap-assisted tunneling model

    Science.gov (United States)

    Kamohara, Shiro; Okuyama, Yutaka; Manabe, Yukiko; Okuyama, Kosuke; Kubota, Katsuhiko; Park, Donggun; Hu, Chenming

    1999-09-01

    We have successfully developed a new quantitative analytical ITAT-based SILC model which can explain both of the two field dependencies, i.e. Fowler-Nordheim (FN)-field and the direct tunneling (DT)-field dependent of A-mode and B-mode SILCs. While DT-field dependence of A-mode comes from the single trap assisted tunneling, FN-field dependence of B- mode originates at the tunneling via the multi-trap leakage path. We have also developed an analytical model for the anomalous SILC of the flash memory cell and investigate the properties of retention lifetime of failure bits. The anomalous SILC shows the DT-field dependence because of the tunneling via the incomplete multi-trap path. A remarkable behavior of retention characteristics predicted by our models is a nearly logarithmic time dependence. The Fowler- Nordheim tunneling model leads to an overestimation of lifetime at low Vth region. To take into account a position of each trap and clarify the detail characteristics of SILC, we have proposed a new Monte Carlo like approach for hopping conduction and successfully explained the anomalous SILC using only physical based parameters.

  9. Effect of spontaneous polarization change on current-voltage characteristics of thin ferroelectric films

    Science.gov (United States)

    Podgorny, Yu. V.; Lavrov, P. P.; Vorotilov, K. A.; Sigov, A. S.

    2015-03-01

    The role of a change in the spontaneous polarization charge in the formation of negative differential conductance regions of the current-voltage characteristics of thin ferroelectric films has been determined. It has been shown that the polarization recovery current, which appears due to partial depolarization of a preliminarily polarized film, prevails over the intrinsic leakage current of the ferroelectric film in the coercive field region and corresponds to the Weibull distribution. The influence of polarization recovery current decreases with decreasing voltage sweep rate.

  10. Liquid helium boil-off measurements of heat leakage from sinter-forged BSCCO current leads under DC and AC conditions

    Science.gov (United States)

    Cha, Y. S.; Niemann, R. C.; Hull, J. R.; Youngdahl, C. A.; Lanagan, M. T.; Nakade, M.; Hara, T.

    1995-06-01

    Liquid helium boil-off experiments are conducted to determine the heat leakage rate of a pair of BSCCO 2223 high-temperature superconductor current leads made by sinter forging. The experiments are carried out in both DC and AC conditions and with and without an intermediate heat intercept. Current ranges are from 0-500 A for DC tests and 0-1,000 A(sub rms) for AC tests. The leads are self-cooled. Results show that magnetic hysteresis (AC) losses for both the BSCCO leads and the low-temperature superconductor current jumper are small for the current range. It is shown that significant reduction in heat leakage rate (liquid helium boil-off rate) is realized by using the BSCCO superconductor leads. At 100 A, the heat leakage rate of the BSCCO/copper binary lead is approximately 29% of that of the conventional copper lead. Further reduction in liquid helium boil-off rate can be achieved by using an intermediate heat intercept. For example, at 500 K, the heat leakage rate of the BSCCO/copper binary lead is only 7% of that of the conventional copper lead when an intermediate heat intercept is used.

  11. Leakage current limiting mechanisms and ferroelectric properties of BiAlO3/La0.67Sr0.33MnO3 heterostructure

    Science.gov (United States)

    Zhao, Yanan; Luo, Bingcheng; Chen, Changle; Xing, Hui; Wang, Jianyuan; Jin, Kexin

    2017-03-01

    The BiAlO3/La0.67Sr0.33MnO3 heterostructure was deposited on LaAlO3 (111) substrate by pulse laser deposition technology. X-ray diffraction measurement indicates that BiAlO3 thin films belong to tetragonal phase. Two different leakage current mechanisms, i.e., Space Charge Limited Current and Schottky emission models are observed in J-E characteristics of BiAlO3/La0.67Sr0.33MnO3 heterostructure in different temperature regions, respectively. The ferroelectric hysteresis loops measured by positive-up negative-down method show intrinsic remnant polarization (2Pr = 2.4 μC/cm2) at the applied electric field of 750 kV/cm, with the 80 nm thickness of BiAlO3 thin films at room temperature. The domain imagines and local piezoelectric hysteresis loops obtained by Piezoresponse Force Microscopy technique further reveal the intrinsic ferroelectricity of. BiAlO3 thin films at room temperature.

  12. Analysis on installation and operation of leakage current protector in rural areas%农村漏电保护器安装运行分析

    Institute of Scientific and Technical Information of China (English)

    程夏蕾; 祝明娟; 郭行干

    2012-01-01

    In the paper, the existing problems are analyzed concerning installation and operation of leakage current protector for rural distribution network in China, inclusive of the influence on graded protections caused by transformer grounding mode, three-phase unbalanced load current and the capacitive current. The measures and suggestions for correct installation and operation of leakage current protector are therefore proposed.%分析了我国农村配电网漏电保护器安装运行中存在的问题,包括农村配电台区接地方式、三相不平衡负荷与容性电流对分级保护的影响等,并提出了正确安装使用漏电保护器的措施和建议。

  13. The Current Cluster Policy: Essence and Characteristics

    Directory of Open Access Journals (Sweden)

    Onipko Tetiana A.

    2017-05-01

    Full Text Available The article is aimed at defining essence of the current cluster policy and its characteristics. It was specified that, in the process of developing and implementing regional, innovation and entrepreneurial policies, many governments drew attention to the clustering of economy as a means of achieving a high level of regional and national competitiveness. The current cluster policy needs to be integrated, that is, to unify different policies, programs, and means. One of the characteristics of the current cluster policy is its orientation towards public-private partnership. The efficient form of such a partnership is cluster organizations. The author’s vision of the current cluster policy is that both the State and the private sector should be parties to it. Emphasis has been placed on the need to support in Ukraine, at the State level, the innovation clusters that facilitate modernization of the existing economic sectors by combining the traditions and the challenges of modernity. It has been concluded that social organizations could be involved in the process of development and implementation of cluster policy in Ukraine. A prospect for further research can be development of the «intellectual specialization» strategy for regions as an important constituent of the current cluster policy.

  14. A Location Method Using Sensor Arrays for Continuous Gas Leakage in Integrally Stiffened Plates Based on the Acoustic Characteristics of the Stiffener

    Directory of Open Access Journals (Sweden)

    Xu Bian

    2015-09-01

    Full Text Available This paper proposes a continuous leakage location method based on the ultrasonic array sensor, which is specific to continuous gas leakage in a pressure container with an integral stiffener. This method collects the ultrasonic signals generated from the leakage hole through the piezoelectric ultrasonic sensor array, and analyzes the space-time correlation of every collected signal in the array. Meanwhile, it combines with the method of frequency compensation and superposition in time domain (SITD, based on the acoustic characteristics of the stiffener, to obtain a high-accuracy location result on the stiffener wall. According to the experimental results, the method successfully solves the orientation problem concerning continuous ultrasonic signals generated from leakage sources, and acquires high accuracy location information on the leakage source using a combination of multiple sets of orienting results. The mean value of location absolute error is 13.51 mm on the one-square-meter plate with an integral stiffener (4 mm width; 20 mm height; 197 mm spacing, and the maximum location absolute error is generally within a ±25 mm interval.

  15. Suppression of gate leakage current in in-situ grown AlN/InAlN/AlN/GaN heterostructures based on the control of internal polarization fields

    Science.gov (United States)

    Kotani, Junji; Yamada, Atsushi; Ishiguro, Tetsuro; Yamaguchi, Hideshi; Nakamura, Norikazu

    2017-03-01

    This paper investigates the gate leakage characteristics of in-situ AlN capped InAlN/AlN/GaN heterostructures grown by metal-organic vapor phase epitaxy. It was revealed that the leakage characteristics of AlN capped InAlN/AlN/GaN heterostructures are strongly dependent on the growth temperature of the AlN cap. For an AlN capped structure with an AlN growth temperature of 740 °C, the leakage current even increased although there exists a large bandgap material on InAlN/AlN/GaN heterostructures. On the other hand, a large reduction of the gate leakage current by 4-5 orders of magnitudes was achieved with a very low AlN growth temperature of 430 °C. X-ray diffraction analysis of the AlN cap grown at 740 °C indicated that the AlN layer is tensile-strained. In contrast to this result, the amorphous structure was confirmed for the AlN cap grown at 430 °C by transmission electron microscopy. Furthermore, theoretical analysis based on one-dimensional band simulation was carried out, and the large increase in two-dimensional electron gas (2DEG) observed in Hall measurements was well reproduced by taking into account the spontaneous and piezo-electric polarization in the AlN layer grown at 740 °C. For the AlN capped structure grown at 430 °C, it is believed that the reduced polarization field in the AlN cap suppressed the penetration of 2DEG into the InAlN barrier layer, resulting in a small impact on 2DEG mobility and density. We believe that an in-situ grown AlN cap with a very low growth temperature of 430 °C is a promising candidate for high-frequency/high-power GaN-based devices with low gate leakage current.

  16. Electric current characteristic of anodic bonding

    Science.gov (United States)

    He, Jun; Yang, Fang; Wang, Wei; Zhang, Li; Huang, Xian; Zhang, Dacheng

    2015-06-01

    In this paper, a novel current-time model of anodic bonding is proposed and verified experimentally in order to investigate underlying mechanisms of anodic bonding and to achieve real-time monitoring of bonding procedure. The proposed model provides a thorough explanation for the electric current characteristic of anodic bonding. More significantly, it explains two issues which other models cannot explain. One is the sharp rise in current when a voltage is initially applied during anodic bonding. The other is the unexpected large width of depletion layers. In addition, enlargement of the intimately contacted area during anodic bonding can be obtained from the proposed model, which can be utilized to monitor the bonding process. To verify the proposed model, Borofloat33 glass and silicon wafers were adopted in bonding experiments in SUSS SB6 with five different bonding conditions (350 °C 1200 V 370 °C 1200 V 380 °C 1200 V 380 °C 1000 V and 380 °C 1400 V). The results indicate that the observed current data highly coincide with the proposed current-time model. For widths of depletion layers, depth profiling using secondary ion mass spectrometry demonstrates that the calculated values by the model are basically consistent with the experimental values as well.

  17. Measurement of the effect of Non Ionising Energy Losses on the leakage current of Silicon Drift Detector prototypes for the LOFT satellite

    CERN Document Server

    Del Monte, E; Zampa, G; Zampa, N; Azzarello, P; Bozzo, E; Campana, R; Diebold, S; Evangelista, Y; Perinati, E; Feroci, M; Pohl, M; Vacchi, A

    2014-01-01

    The silicon drift detectors are at the basis of the instrumentation aboard the {Large Observatory For x-ray Timing} (LOFT) satellite mission, which underwent a three year assessment phase within the "Cosmic Vision 2015 - 2025" long-term science plan of the European Space Agency. Silicon detectors are especially sensitive to the displacement damage, produced by the non ionising energy losses of charged and neutral particles, leading to an increase of the device leakage current and thus worsening the spectral resolution. During the LOFT assessment phase, we irradiated two silicon drift detectors with a proton beam at the Proton Irradiation Facility in the accelerator of the Paul Scherrer Institute and we measured the increase in leakage current. In this paper we report the results of the irradiation and we discuss the impact of the radiation damage on the LOFT scientific performance.

  18. Risk Management of Medical Electrical Equipment Leakage Current%医用电气设备漏电流风险管理

    Institute of Scientific and Technical Information of China (English)

    彭安民; 胡兆燕

    2011-01-01

    Objective The leakage current hazard and leakage current risk management of medical electrical equipment are discussed according to the requirements of the 3 ' edition of 1EC60601 - 1 for the application of medical electrical equipment leakage current risk management process for reference. Methods Firstly, general requirements for leakage current of medical electrical equipment are described and the leakage current hazards are analyzed, then medical electrical equipment leakage current risk management process is illustrated according to 1SO14971: 2007, IEC60601 - 1 3rd edition and other standards. Results Medical electrical equipment leakage current risk management is an important aspect of medical electrical equipment risk management. The systematic application of leakage current risk management process to medical electrical equipment can reduce the risk. Conclusions Medical electrical equipment meeting 1EC60601 - 1 3rd edition requirements means that the manufacturers have applied the risk management process according with 1SO14971 requirements. The general requirements for safety standard of medical electrical equipment in China are 10 years behind those in the developed countries. It is an urgent matter to make the 1EC60601-1 3rd edition as a mandatory national standard.%目的 根据IEC60601-1第3版的要求讨论医用电气设备的漏电流危害及漏电流风险管理,为应用医用电气设备的漏电流风险管理提供参考.方法 首先阐述了医用电气设备的漏电流通用要求并分析了漏电流的危害,然后依据ISO 14971:2007和 IEC60601-1第3版等标准讲述了医用电气设备的漏电流风险管理过程.结果 医用电气设备的漏电流风险管理是医用电气设备风险管理的一个重要方面,应用系统化的医用电气设备漏电流风险管理可以降低风险.结论 医用电气设备符合IEC60601-1第3版要求即意味制造商有符合ISO14971规定的风险管理过程.在医用电气设备安

  19. 铁电薄膜漏电流的应变调控%Strain control of the leakage current of the ferroelectric thin films∗

    Institute of Scientific and Technical Information of China (English)

    娟辉; 杨琼; 曹觉先†; 周益春

    2013-01-01

      基于密度泛函理论的第一性原理并结合非平衡格林函数,探讨了应变对BaTiO3铁电薄膜漏电流的影响规律。研究表明,压应变能有效地抑制BaTiO3铁电薄膜漏电流,特别是当压应变为4%时,其漏电流相对无应变状态降低了近10倍。通过考察体系的透射系数和电子态密度发现:一方面压应变状态下铁电隧道结的透射几率要比张应变时小,特别是在费米面附近;另一方面随着张应变过渡至压应变时,价带的位置逐渐向低能区移动而导带向高能区移动,导致了其带隙的增大,从而有效抑制了漏电流。本研究为寻找抑制铁电薄膜漏电流,提高铁电薄膜及铁电存储器的性能提供合适的方法。%Combining nonequilibrium Green’s functions and first-principles quantum transport calculations in density-functional theory, we investigate the effect of biaxial strain on the leakage current of BaTiO3 ferroelectric thin film. The results show that the compressive strain can effectively reduce the leakage current of ferroelectric thin film. Especially when the compressive strain is 4%, the leakage current will be reduced by nearly 10 times that of strain-free case. By calculating the transmission coefficient and the density of states, we find that the transmission probability of ferroelectric tunnel junction with compressive strain is smaller than that with tensile strain. Moreover, we find that the valence band shifts toward the lower energy zone while the conduction band moves toward the high energy zone, which leads to the enlarged energy band gap, thereby reducing the leakage current. Our study suggestes a suitable way to reduce the ferroelectric thin film leakage current and improve the performance of ferroelectric thin film and its relevant ferroelectric memory.

  20. 医用泄漏电流测量网络的校准技术研究%Research on the Calibration of Measuring Network in Medical Leakage Current Testers

    Institute of Scientific and Technical Information of China (English)

    陈志雄; 黄蓓

    2016-01-01

    研究了 GB 9706.1-2007医用泄漏电流测量网络的校准技术。分析了在 DC ~1MHz 频率范围内校准测量网络的输入阻抗和传输特性的必要性,指出测量网络具有准确的频响特性是实现泄漏电流测量的先决条件;提出了测量网络的校准方法,并分析了测量网络的频响参数标准值。通过分析测试线分布电感对传输特性校准的影响,指出电压表高频共模抑制能力的不足将带来显著的误差。基于 DDS、 I-V 转换和隔离测量等技术,研制了一款多功能的泄漏电流校准仪,能够实现测量网络的输入阻抗和传输电压比的自动扫频校准,满足医用泄漏电流测试仪的校准需要。%The calibration of measuring network in medical leakage current testers is researched, in compliance with the standard of GB 9706. 1-2007. It is necessary to calibrate the input-impedance and transfer-characteristic in the frequency range from DC to 1MHz. It is pointed out that correct frequency response characters are the precondition of leakage current measurement, and the calibration method of network is pro-posed, whose standard values of input-impedance and transfer-ratio are calculated then. The influence of distributed inductance on the calibration of transfer-characteristic is analyzed, and the high frequency common-mode-rejection ability of voltage meter in network’ s respond port is the main error source. Based on the technologies of DDS, I-V conversion and isolation-measurement, a multifunctional leakage current calibrator is developed, which can take automatic sweep in frequency to calibrations of input-impedance and transfer-ratio. The Calibrator meets the require-ments of medical leakage current testers well.

  1. Characteristics of bleaching of sandstone in northeast of Ordos Basin and its relationship with natural gas leakage

    Institute of Scientific and Technical Information of China (English)

    MA; YanPing; LIU; ChiYang; ZHAO; JunFeng; HUANG; Lei; YU; Lin; WANG; JianQiang

    2007-01-01

    Bleaching of sandstone has significant applications to tracing hydrocarbon pathways and evaluating the scale of natural gas seepage. Bleaching of sandstones in the northeast of Ordos Basin is mainly distributed in the Mesozoic Yan'an Formation. Studying on petrology, major elements, REEs and trace elements of bleached sandstones and comparing with adjacent sandstones, combining with geologic-geochemical evidences of gas seepage in the northeast of the basin, the bleached sandstones are formed in the acid environment and reducing fluids. Characteristics of petrology show that the contents of kaolinite are high and the color of margin of ferric oxide minerals is lighter than that of the center. Major elements of sandstone samples show high contents of Al2O3 and low ratio of Fe3+/Fe2+. The TFe2O3 content of the bleached sandstone is lower than that of red rock. REE data show that bleached sandstones have low ∑REE contents and Eu-depleted and slightly Ce-enriched. Trace elements show that the bleached sandstones enrich in Co, deplete in Sr, and slightly enrich in Zr and Hf which are close to the values for the green alteration sandstones, and slightly lower than ore-bearing sandstones. Geochemical characteristics of oil-bearing sandstone in the northern basin suggest that the oil-shows are formed by matured Carboniferous-Permian coal bed methane escaping to the surface, and natural gas in field could migrate to the north margin of the basin. The δ13C (PDB) andδ18O(PDB) values of calcite cement in the study area range from -11.729‰ to -10.210‰ and -14.104‰ to -12.481‰, respectively. Theδ13C (PDB) values less than -10‰ imply the carbon sources part from organic carbon. Comprehensive study suggests that the gas leakage has occurred in the northeastern basin, which is responsible for bleaching of the sandstone on top of the Yan'an Formation.

  2. A physical model for the reverse leakage current in (In,Ga)N/GaN light-emitting diodes based on nanowires

    OpenAIRE

    2015-01-01

    We investigated the origin of the high reverse leakage current in light emitting diodes (LEDs) based on (In,Ga)N/GaN nanowire (NW) ensembles grown by molecular beam epitaxy on Si substrates. To this end, capacitance deep level transient spectroscopy (DLTS) and temperature-dependent current-voltage (I-V) measurements were performed on a fully processed NW-LED. The DLTS measurements reveal the presence of two distinct electron traps with high concentrations in the depletion region of the p-i-n ...

  3. Structural, ferroelectric and leakage current properties of Bi{sub 3.96}Pr{sub 0.04}Ti{sub 2.95}Nb{sub 0.05}O{sub 12} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Kao, Ming-Cheng, E-mail: kmc@mail.hust.edu.tw [Department of Electronic Engineering, Hsiuping University of Science and Technology, Taichung 412, Taiwan (China); Chen, Hone-Zern, E-mail: hzc@mail.hust.edu.tw [Department of Electronic Engineering, Hsiuping University of Science and Technology, Taichung 412, Taiwan (China); Young, San-Lin [Department of Electronic Engineering, Hsiuping University of Science and Technology, Taichung 412, Taiwan (China); Kao, Ming-Hui [Department of Electronic Engineering, Chung Chou University of Science and Technology, Changhua 510, Taiwan (China)

    2014-11-03

    Praseodymium and niobium-substituted bismuth titanate (Bi{sub 3.96}Pr{sub 0.04}Ti{sub 2.95}Nb{sub 0.05}O{sub 12}, BPTNO) thin films were deposited on Pt(111)/Ti/SiO{sub 2}/Si(100) substrates by a sol–gel technology. The effects of annealing temperature (500 ∼ 800 °C) on microstructure and electric properties of thin films were investigated. X-ray diffraction analysis shows that the BPTNO thin films have a bismuth-layered perovskite structure with preferred (117) orientation. The intensities of (117) peak increases with increasing annealing temperature. With the increase of annealing temperature from 500 °C to 800 °C, the grain size of BPTNO thin films increases. The highly (117)-oriented BPTNO thin films exhibits a high remnant polarization (2P{sub r}) of 48 μC/cm{sup 2} and a low coercive field (2E{sub c}) of 110 kV/cm, fatigue free characteristics up to > 10{sup 8} switching cycles. A small leakage current density (J) was 6.23 × 10{sup −8} A/cm{sup 2} at 200 kV/cm. The leakage current mechanisms were controlled by Poole–Frenkel emission in the low electric field region and by Schottky emission in the high field region. - Highlights: • Bi{sub 3.96}Pr{sub 0.04}Ti{sub 2.95}Nb{sub 0.05}O{sub 12} thin films were prepared by sol–gel technology. • Films show preferred (117) orientation. • The Pr and Nb-doping decrease the oxygen vacancy concentration. • The Pr and Nb-doping improved the ferroelectric and leakage current properties.

  4. Leakage current transport mechanisms of La0.67Sr0.33MnO3/BaTiO3 bilayer films grown on Nb:SrTiO3

    Indian Academy of Sciences (India)

    Pan Ruikun; Liu Panke; Li Mingkai; Tao Haizheng; Li Pai; He Yunbin

    2015-06-01

    La0.67Sr0.33MnO3/BaTiO3(LSMO/BTO) bilayer films were epitaxially grown on Nb:SrTiO3 (NSTO) substrates by the pulsed laser deposition technique. Current–voltage (–) characteristics of the LSMO/BTO bilayer films were studied. – curves were measured at room temperature, which show rectifying behaviour and can be well fitted by the space-charge-limited current mechanism under forward bias while thermionic emission model under reverse bias. Analysis indicates that a modulating Schottky barrier exists at the LSMO/BTO interface, which dominates the leakage current transport properties of LSMO/BTO bilayer films.

  5. Self-Aligned ALD AlOx T-gate Insulator for Gate Leakage Current Suppression in SiNx-Passivated AlGaN/GaN HEMTs

    Science.gov (United States)

    2010-01-01

    Self-aligned ALD AlOx T-gate insulator for gate leakage current suppression in SiNx-passivated AlGaN/ GaN HEMTs David J. Meyer *, Robert Bass, D...concept metal–insulator–semiconductor (MIS) AlGaN/ GaN high-electron mobility transistor ( HEMT ) that uses a self-aligned 10 nm AlOx gate insulator and...Au gate metal layers to fabri- cate submicron insulated T-gates for AlGaN/ GaN high-electron mobility transistors ( HEMTs ). Metal–insulator

  6. Investigation of band offsets and direct current leakage properties of nitrogen doped epitaxial Gd{sub 2}O{sub 3} thin films on Si

    Energy Technology Data Exchange (ETDEWEB)

    Roy Chaudhuri, Ayan; Osten, H. J. [Institute of Electronic Materials and Devices, Leibniz University of Hannover, Schneiderberg 32, D-30167 Hannover (Germany); Fissel, A. [Information Technology Laboratory, Leibniz University of Hannover, Schneiderberg 32, D-30167 Hannover (Germany)

    2013-05-14

    Dielectric properties of epitaxial Gd{sub 2}O{sub 3} thin films grown on Si have been found to improve significantly by incorporation of suitable dopants. However, in order to achieve optimum electrical properties from such doped oxides, it is important to understand the correlation between doping and the electronic structure of the material. In the present article, we report about the effect of nitrogen doping on the electronic structure and room temperature dc leakage properties of epitaxial Gd{sub 2}O{sub 3} thin films. Epitaxial Gd{sub 2}O{sub 3}:N thin films were grown on p-type Si (111) substrates by solid source molecular beam epitaxy technique using molecular N{sub 2}O as the nitridation agent. First investigations confirmed the presence of substitutional N in the Gd{sub 2}O{sub 3}:N layers. Incorporation of nitrogen did not affect the structural quality of the oxide layers. X ray photoelectron spectroscopy investigations revealed band gap narrowing in epitaxial Gd{sub 2}O{sub 3} due to nitrogen doping, which leads to reduction in the valence band offset of the Gd{sub 2}O{sub 3}:N layers with Si. DC leakage current measured at room temperature revealed that despite reduction in the band gap and valence band offsets due to N doping, the Gd{sub 2}O{sub 3}:N layers remain sufficiently insulating. A significant reduction of the leakage current densities in the Gd{sub 2}O{sub 3}:N layers with increasing nitrogen content suggests that doping of epitaxial Gd{sub 2}O{sub 3} thin films with nitrogen can be an effective route to eliminate the adverse effects of the oxygen vacancy induced defects in the oxide layers.

  7. N-Doped LaAlO3/Si(100) Films with High-k, Low-Leakage Current and Good Thermal Stability

    Institute of Scientific and Technical Information of China (English)

    XIANG Wen-Feng; LU Hui-Bin; CHEN Zheng-Hao; HE Meng; LU Xu-Bing; LIU Li-Feng; GUO Hai-Zhong; ZHOU Yue-Liang

    2005-01-01

    @@ High quality amorphous N-doped LaAlO3 (LaAlON) films have been deposited on Si (100) in nitrogen gas by laser molecular beam epitaxy. The chemical nature and physical distribution of N in LaAlON films has been performed by x-ray photoemission spectroscopy. Compared with LaAlO3, a significant improvement in the interfacial quality and leakage current density was obtained by nitrogen additive. At gate voltage +1 V, the leakage current density of the LaAlON film with an equivalent oxide thickness as thin as 2nm is obtained to be 2.9 × 10-6 A/cm2,which decreases almost two orders of magnitude from that of LaAlO3 film with the same thickness. Moreover, high-resolution transmission electron microscope analysis show that the LaAlON sample is still amorphous with a very sharp interface between the LaAlON layer and the Si substrate after annealed at 900℃ for 60s.

  8. 绝缘子泄漏电流的自适应SPIHT数据压缩%Adaptive SPIHT Algorithm for Data Compression of Insulator Leakage Currents

    Institute of Scientific and Technical Information of China (English)

    朱永利; 翟学明; 姜小磊

    2011-01-01

    A fault in any one string of insulators may cause a power network accident, so insulator online monitoring is of vital importance. Sampling frequency of leakage currents must be high enough to find abnormalities in insulators, yielding large amount of data, hence the data compression of leakage currents is of great significance. An adaptive version of SPIHT is proposed, which can partition sets of wavelet coefficients according to their significance, thus effectively reduces the number of judgments on whether the coefficients in one set are all 0, making itself well suited for coding signals with high-level noise such as leakage currents. In view of the high noise level and periodic redundancy of the leakage currents, adaptive SPIHT and DPCM are utilized for the coding of wavelet detail and approximation coefficients, respectively. The compression efficiency can be further improved if context-based adaptive binary arithmetic coding is employed. The proposed algorithm is evaluated on testing data of insulator leakage currents, showing compression performance significantly better than SPIHT. Compared with existing two-dimensional algorithms for data compression in power systems, it can do compression after data sampling within just one AC power working cycle, so it is more suitable for the real time or online situations.%任何一串绝缘子故障都可能诱发电网事故,因此绝缘子的在线监测十分重要。为了发现绝缘子放电等异常,泄漏电流的采样频率须比较高,数据量大,这就要求对这些采样数据进行压缩。本文提出自适应SPIHT算法,该算法可以根据小波系数集合的显著性自适应地进行集合划分,有效地减少了原始SPIHT算法判断集合中系数是否全部为0的次数,尤其适合压缩泄漏电流这类高噪声信号。针对泄漏电流周期冗余和高噪声的特点,本文利用自适应SPIHT和DPCM分别对泄漏电流的小波细节分量和近似分量进行编

  9. Ion induced intermixing and consequent effects on the leakage currents in HfO{sub 2}/SiO{sub 2}/Si systems

    Energy Technology Data Exchange (ETDEWEB)

    Manikanthababu, N.; Saikiran, V.; Pathak, A.P.; Rao, S.V.S.N. [University of Hyderabad, School of Physics, Hyderabad (India); Chan, T.K.; Vajandar, S.; Osipowicz, T. [National University of Singapore, Department of Physics, Centre for Ion Beam Applications (CIBA), Singapore (Singapore)

    2017-05-15

    Atomic layer deposited (ALD) samples with layer stacks of HfO{sub 2} (3 nm)/SiO{sub 2} (0.7 nm)/Si were subjected to 120 MeV Au ion irradiation at different fluences to study intermixing effects across the HfO{sub 2}/SiO{sub 2} interface. High-resolution Rutherford backscattering spectrometry (HRBS) and X-ray reflectivity (XRR) measurements confirm an increase in the interlayer thickness as a result of SHI induced intermixing effects. Current-voltage (I-V) measurements reveal an order of magnitude difference in the leakage current density between the pristine and irradiated samples. This can be explained by considering the increased physical thickness of interlayer (HfSiO). Furthermore, the samples were subjected to rapid thermal annealing (RTA) process to analyze annealing kinetics. (orig.)

  10. Leakage current, capacitance hysteresis and deep traps in Al{sub 0.25}Ga{sub 0.75}N/GaN/SiC high-electron-mobility transistors

    Energy Technology Data Exchange (ETDEWEB)

    Saadaoui, Salah, E-mail: salahsaadaoui_22@yahoo.fr [Laboratoire de Micro-Optoélectronique et Nanostructures, Université de Monastir, Faculté des Sciences de Monastir, Avenue de l’environnement, 5000 Monastir (Tunisia); Salem, Mohamed Mongi Ben; Fathallah, Olfa; Gassoumi, Malek [Laboratoire de Micro-Optoélectronique et Nanostructures, Université de Monastir, Faculté des Sciences de Monastir, Avenue de l’environnement, 5000 Monastir (Tunisia); Gaquière, Christophe [Institut d’Electronique de Microélectronique et de Nanotechnologie IEMN, Département Hyperfréquences et Semiconducteurs, Université des Sciences et Technologies de Lille, Avenue Poincaré, 59652 Villeneuve d’Ascq Cedex (France); Maaref, Hassen [Laboratoire de Micro-Optoélectronique et Nanostructures, Université de Monastir, Faculté des Sciences de Monastir, Avenue de l’environnement, 5000 Monastir (Tunisia)

    2013-03-01

    Hysteresis phenomenon in the capacitance–voltage characteristics and leakage current under reverse-biased Schottky gate were investigated for Al{sub 0.25}Ga{sub 0.75}N/GaN/SiC HEMT's with two different gate lengths. These phenomena were attributed to the electron tunneling through the surface, the bulk or/and the metal/AlGaN interface states. Using Capacitance DLTS, we have found that the deep trap responsible of these phenomena has activation energy of 0.74 eV. It was an extended defect in the AlGaN/GaN heterostructures. Else, an electron trap (Ea=0.16 eV) was detected only in the transistor having the smaller gate length. The possible explanations of its origin will be established in this paper.

  11. On Probability Leakage

    OpenAIRE

    Briggs, William M.

    2012-01-01

    The probability leakage of model M with respect to evidence E is defined. Probability leakage is a kind of model error. It occurs when M implies that events $y$, which are impossible given E, have positive probability. Leakage does not imply model falsification. Models with probability leakage cannot be calibrated empirically. Regression models, which are ubiquitous in statistical practice, often evince probability leakage.

  12. Research on Surface Leakage Impulse Current of Iced-insulator Using Nonlinear Dynamics%利用非线性动力学研究覆冰绝缘子表面泄漏脉冲电流

    Institute of Scientific and Technical Information of China (English)

    黎辉; 李毅; 李建奇; 陆佳政; 包宗士

    2012-01-01

    笔者通过研究常温下,覆冰绝缘子各融冰阶段不同交流电压等级下表面临闪泄漏脉冲电流时域波形的变化规律,利用非线性动力学理论分析了各阶段泄漏脉冲波形的非线性特性,通过比较波形的最大幅值变化和Lyapunov指数(LE),得出了融冰过程绝缘子表面泄漏脉冲的变化特性,结果表明,不同融冰阶段及其不同电压等级下的泄漏放电脉冲波形具有不同的非线性特性,因此可为覆冰绝缘子的故障监测提供新的诊断方法.%Through making AC tests under ambient temperature,this paper studies the time-domain variation rule of facing flashed leakage impulse current on the surface of iced insulators under different voltage levels at different ice-melting stages. The nonlinear properties of leakage pulse current at various stages are analyzed by using nonlinear dynamics theoretics,meanwhile, by comparing the wave amplitude changes and the largest Lyapunov Index (LE),the change characteristics of the insulator surface's lakeage pulse current for various ice-melting processes are deduced,and the results show that they take on dissimilar nonlinear properties for the lakeage discharge pulse waveform under different voltage level at different ice-melting stages,therefore,throught which a new diagnostic method to monitor the faults for iced insulators is proposed.

  13. Calculation of Leakage Inductance for High Frequency Transformers

    DEFF Research Database (Denmark)

    Ouyang, Ziwei; Jun, Zhang; Hurley, William Gerard

    2015-01-01

    Frequency dependent leakage inductance is often observed. High frequency eddy current effects cause a reduction in leakage inductance. The proximity effect between adjacent layers is responsible for the reduction of leakage inductance. This paper gives a detailed analysis of high frequency leakage...... inductance and proposes an accurate prediction methodology. High frequency leakage inductances in several interleaved winding configurations are also discussed. Interleaved winding configurations actually give a smaller degree of reduction of leakage induction at high frequency. Finite Element Analysis (FEA...

  14. Current-potential characteristics of electrochemical systems

    Energy Technology Data Exchange (ETDEWEB)

    Battaglia, V.S.

    1993-07-01

    This dissertation contains investigations in three distinct areas. Chapters 1 and 2 provide an analysis of the effects of electromagnetic phenomena during the initial stages of cell discharge. Chapter 1 includes the solution to Maxwell`s equations for the penetration of the axial component of an electric field into an infinitely long cylindrical conductor. Chapter 2 contains the analysis of the conductor included in a radial circuit. Chapter 3 provides a complete description of the equations that describe the growth of an oxide film. A finite difference program was written to solve the equations. The system investigated is the iron/iron oxide in a basic, aqueous solution. Chapters 4 and 5 include the experimental attempts for replacing formaldehyde with an innocuous reducing agent for electroless deposition. In chapter 4, current-versus-voltage curves are provided for a sodium thiosulfate bath in the presence of a copper disk electrode. Also provided are the cathodic polarization curves of a copper/EDTA bath in the presence of a copper electrode. Chapter 5 contains the experimental results of work done with sodium hypophosphite as a reducing agent. Mixed-potential-versus-time curves for solutions containing various combinations of copper sulfate, nickel chloride, and hypophosphite in the presence of a palladium disk electrode provide an indication of the reducing power of the solutions.

  15. TMAH-based wet surface pre-treatment for reduction of leakage current in AlGaN/GaN MIS-HEMTs

    Science.gov (United States)

    Yoon, Young Jun; Seo, Jae Hwa; Cho, Min Su; Kang, Hee-Sung; Won, Chul-Ho; Kang, In Man; Lee, Jung-Hee

    2016-10-01

    The pre-passivation surface treatment process with tetramethylammonium hydroxide (TMAH)-based wet solution was proposed for the minimization of the leakage current (Ileak) in AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs). This process step contributes to the simultaneous decrease of the surface current (Isurf) in the active region of device and mesa-isolated region by removing the surface states and traps related to nitrogen (N) vacancy, Ga-oxide, and dangling bonds. Using the surface treatment, the fabricated device achieves a lower off-state current (Ioff) of ∼10-12 A/mm, a higher on/off current ratio (Ion/Ioff) of ∼1011, a small subthreshold swing (SS) of 68.4 mV/dec. The reduced Ileak also improves breakdown voltage (BV). In addition, the interface trap density (Dit) between the SiN layer and the AlGaN surface was extracted to evaluate the quality of the SiN/GaN interface, which showed that the treatment decreases the Dit with reduction of the surface defects.

  16. Current-Voltage Characteristics of Quasi-One-Dimensional Superconductors

    DEFF Research Database (Denmark)

    Vodolazov, D.Y.; Peeters, F.M.; Piraux, L.

    2003-01-01

    The current-voltage (I-V) characteristics of quasi-one-dimensional superconductors were discussed. The I-V characteristics exhibited an unusual S behavior. The dynamics of superconducting condensate and the existence of two different critical currents resulted in such an unusual behavior....

  17. Leakage current analysis of a single-phase transformer-less PV inverter connected to the grid

    DEFF Research Database (Denmark)

    Ma, Lin; Tang, F.; Zhou, F.;

    2009-01-01

    Due to the large surface of the PV generator, its stray capacity with respect to the ground reaches values that can be quite high. When no transformer is used in a grid-connected PV system, common-mode current, which caused by the common mode voltage, can flow through the stray capacitance betwee...

  18. Mechanism Study of Gate Leakage Current for AlGaN/GaN High Electron Mobility Transistor Structure Under High Reverse Bias by Thin Surface Barrier Model and Technology Computer Aided Design Simulation

    Science.gov (United States)

    Hayashi, Kazuo; Yamaguchi, Yutaro; Oishi, Toshiyuki; Otsuka, Hiroshi; Yamanaka, Koji; Nakayama, Masatoshi; Miyamoto, Yasuyuki

    2013-04-01

    Gate leakage current mechanism in GaN high electron mobility transistors (HEMTs) has been studied using a two-dimensional thin surface barrier (TSB) model to represent two unintentional donor thin layers that exit under and outside the gate electrode due to the existence of surface defects. The donor thin layer outside the gate affects the reverse gate current at the high gate voltage above the pinch-off voltage. Higher donor concentration of thin layer outside the gate results in larger ratio of lateral to vertical components of the electric field at the gate edge. On the other hand, the electric field at the center of the gate has only the vertical electric field component. As a result, the two-dimensional effects are only important for the reverse gate current above the pinch-off voltage. We have confirmed in this paper that the simulation results provided by our model correlate very well with the experimental reverse gate current characteristics of the device for a very wide range of reverse gate voltage from 0.1 to 90 V.

  19. TWO NEW DUCT LEAKAGE TESTS

    Energy Technology Data Exchange (ETDEWEB)

    ANDREWS,J.W.

    1998-12-01

    Two variations on the tests for duct leakage currently embodied in ASHRAE Standard 152P (Method of Test for Determining the Design and Seasonal Efficiencies of Residential Thermal Distribution Systems) are presented. Procedures are derived for calculating supply and return duct leakage to/from outside using these new variations. Results of these tests are compared with the original ones in Standard 152P on the basis of data collected in three New York State homes.

  20. Investigation of the characteristics of GIDL current in 90nm CMOS technology

    Institute of Scientific and Technical Information of China (English)

    Chen Hai-Feng; Hao Yue; Ma Xiao-Hua; Zhang Jin-Cheng; Li Kang; Cao Yan-Rong; Zhang Jin-Feng; Zhou Peng-Ju

    2006-01-01

    A specially designed experiment is performed for investigating gate-induced drain leakage (GIDL) current in 90nm CMOS technology using lightly-doped drain (LDD) NMOSFET. This paper shows that the drain bias VD has a strong effect on GIDL current as compared with the gate bias VG at the same drain-gate voltage VDG-It is found that the difference between ID in the off-state ID-VG characteristics and the corresponding one in the off-state ID-VD characteristics, which is defined as /DIFF, versus VDG shows a peak. The difference between the influences of VD and VG on GIDL current is shown quantitatively by /DIFF, especially in 90nm scale. The difference is due to different hole tunnellings. Furthermore, the maximum /DIFF(IDIFF.MAX) varies linearly with VDG in logarithmic coordinates and also VDG at IDIFF.MAX with VF which is the characteristic voltage of /DIFF- The relations are studied and some related expressions are given.

  1. Solution-Processed Small-Molecule Bulk Heterojunctions: Leakage Currents and the Dewetting Issue for Inverted Solar Cells.

    Science.gov (United States)

    Destouesse, Elodie; Chambon, Sylvain; Courtel, Stéphanie; Hirsch, Lionel; Wantz, Guillaume

    2015-11-11

    In organic photovoltaic (PV) devices based on solution-processed small molecules, we report here that the physicochemical properties of the substrate are critical for achieving high-performances organic solar cells. Three different substrates were tested: ITO coated with PSS, ZnO sol-gel, and ZnO nanoparticles. PV performances are found to be low when the ZnO nanoparticles layer is used. This performance loss is attributed to the formation of many dewetting points in the active layer, because of a relatively high roughness of the ZnO nanoparticles layer, compared to the other layers. We successfully circumvented this phenomenon by adding a small quantity of polystyrene (PS) in the active layer. The introduction of PS improves the quality of film forming and reduces the dark currents of solar cells. Using this method, high-efficiency devices were achieved, even in the case of substrates with higher roughness.

  2. AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors with reduced leakage current and enhanced breakdown voltage using aluminum ion implantation

    Energy Technology Data Exchange (ETDEWEB)

    Sun, Shichuang [Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074 (China); Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123 (China); Fu, Kai, E-mail: kfu2009@sinano.ac.cn, E-mail: cqchen@mail.hust.edu.cn; Yu, Guohao; Zhang, Zhili; Song, Liang; Deng, Xuguang; Li, Shuiming; Sun, Qian; Cai, Yong; Zhang, Baoshun [Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123 (China); Qi, Zhiqiang; Dai, Jiangnan; Chen, Changqing, E-mail: kfu2009@sinano.ac.cn, E-mail: cqchen@mail.hust.edu.cn [Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074 (China)

    2016-01-04

    This letter has studied the performance of AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors on silicon substrate with GaN buffer treated by aluminum ion implantation for insulating followed by a channel regrown by metal–organic chemical vapor deposition. For samples with Al ion implantation of multiple energies of 140 keV (dose: 1.4 × 10{sup 14} cm{sup −2}) and 90 keV (dose: 1 × 10{sup 14} cm{sup −2}), the OFF-state leakage current is decreased by more than 3 orders and the breakdown voltage is enhanced by nearly 6 times compared to the samples without Al ion implantation. Besides, little degradation of electrical properties of the 2D electron gas channel is observed where the maximum drain current I{sub DSmax} at a gate voltage of 3 V was 701 mA/mm and the maximum transconductance g{sub mmax} was 83 mS/mm.

  3. High performance x-ray imaging detectors on foil using solution-processed organic photodiodes with extremely low dark leakage current (Presentation Recording)

    Science.gov (United States)

    Kumar, Abhishek; Moet, Date; van der Steen, Jan Laurens; van Breemen, Albert; Shanmugam, Santhosh; Gilot, Jan; Andriessen, Ronn; Simon, Matthias; Ruetten, Walter; Douglas, Alexander; Raaijmakers, Rob; Malinowski, Pawel E.; Myny, Kris; Gelinck, Gerwin

    2015-10-01

    High performance X-ray imaging detectors on foil using solution-processed organic photodiodes with extremely low dark leakage current Abhishek Kumara, Date Moeta, Albert van Breemena, Santhosh Shanmugama, Jan-Laurens van der Steena, Jan Gilota, Ronn Andriessena, Matthias Simonb, Walter Ruettenb, Alexander U. Douglasb, Rob Raaijmakersc, Pawel E. Malinowskid, Kris Mynyd and Gerwin H. Gelincka,e a. Holst Centre/TNO, High Tech Campus 31, Eindhoven 5656 AE, The Netherlands b. Philips Research, High Tech Campus 34, 5656 AE Eindhoven, The Netherlands c. Philips Healthcare, Veenpluis 6-8, 5684 PC Best, The Netherlands d. Department of Large Area Electronics, imec vzw, Kapeldreef 75, Leuven B3001, Belgium e. Applied Physics Department, TU Eindhoven, Eindhoven, The Netherlands We demonstrate high performance X-ray imaging detectors on foil suitable for medical grade X-ray imaging applications. The detectors are based on solution-processed organic photodiodes forming bulk-heterojunctions from photovoltaic donor and acceptor blend. The organic photodiodes are deposited using an industrially compatible slot die coating technique with end of line processing temperature below 100°C. These photodiodes have extremely low dark leakage current density of 10-7 mA/cm2 at -2V bias with very high yield and have peak absorption around 550 nm wavelength. We combine these organic photodiodes with high mobility metal oxide semiconductor based thin film transistor arrays with high pixel resolution of 200ppi on thin plastic substrate. When combined with a typical CsI(TI) scintillator material on top, they are well suited for low dose X-ray imaging applications. The optical crosstalk is insignificant upto resolution of 200 ppi despite the fact that the photodiode layer is one continuous layer and is non-pixelated. Low processing temperatures are another key advantage since they can be fabricated on plastic substrate. This implies that we can make X-ray detectors on flexible foil. Those

  4. Effects of Cu2+ on characteristic of SV currents

    Institute of Scientific and Technical Information of China (English)

    ZHANG; Liping; YANG; Pin

    2006-01-01

    Applying the patch-clamp technique to vacuoles from Radish we studied the effects of Cu2+ on Slow Vacuolar (SV) current's characteristic. Our results show that Cu2+ in bath solution at higher concentration inhibits SV currents and the percentage of inhibition increases with increasing concentration and changes with different voltage. When at lower concentration, Cu2+ significantly promotes the SV currents and the promotion ratio decrease with increasing voltage. At the same time, the time constants of activation become lesser after adding Cu2+. These results show that there may be some Cu2+ binding sites on SV channels and binding to which can change SV current's characteristic.

  5. Study on Characteristics of Cracking Leakage of Large Oil Storage Tanks%大型油罐破裂泄漏特征研究

    Institute of Scientific and Technical Information of China (English)

    刘强; 王建华; 赵泽霖; 蒲家琦; 余东城; 罗朔

    2015-01-01

    Based on the statistics of the tank rupture accidents, the tank crackingcharacteristics and oil leakage flow distributionwere analyzed. According to the statistics of accidents, three typical formsof tank rupture were summarized,the location and reason of the oil tank crack were established. Consequences of the accident were analyzed, and the tank crackingleakage process was divided into two stages,theirflow field characteristics were researched respectively. With flat flow critical Reynolds number as the criterion, several Reynoldsnumbers of common oil for oil farm were calculated. It was concluded that the flowfieldof majority oil leakage was fully developed turbulence flow.%统计了多起油罐破裂事故,并对油罐破裂特征及油品泄漏流场进行分析。通过事故案例统计,总结了三种典型的油罐破裂形式,得到了油罐易发生破裂的位置及原因。对事故案例后果进行分析,将油罐破裂泄漏过程分为两个阶段,并分别对其流场特性进行研究。以平板流动临界雷诺数为判定准则,对油库常见油品泄漏流动雷诺数进行计算,得出泄漏油品的流态绝大多数为完全发展的湍流。

  6. Investigation of Leakage Current Mechanisms in La2O3/SiO2/4H-SiC MOS Capacitors with Varied SiO2 Thickness

    Science.gov (United States)

    Wang, Yucheng; Jia, Renxu; Zhao, Yanli; Li, Chengzhan; Zhang, Yuming

    2016-11-01

    In this study, the material and electrical properties of La2O3/SiO2/4H-SiC metal-oxide-semiconductor (MOS) capacitors are systematically characterized. Thermal oxidization SiO2 with varying thickness (0 nm, 3.36 nm, 5 nm, 8 nm, and 30 nm) were coated with La2O3 using atomic layer deposition on n-type 4H-SiC. The stacking oxides were measured using atomic force microscopy, transmission electron microscopy, and x-ray photoelectron spectroscopy, and the MOS capacitors were measured by capacitance-voltage and current-voltage measurements. The results demonstrate that the main gate current leakage mechanisms are dependent on the thickness of the SiO2 oxide under the applied electric field. The primary mechanism for current leakage from the La2O3/4H-SiC MOS capacitor follows the Schottky emission mechanism due to its low conduction band offset. In contrast, the current leakage mechanism for the capacitor with a 3.36 nm SiO2 layer follows the Poole-Frenkel emission mechanism on account of its high trap charge density in the gate dielectric and at the interface. When the thickness of the SiO2 layer increases to 8 nm, lower leakage current is observed by reason of the low trap charge density and high conduction band offset when E ≤ 5 MV/cm. As the electric field strength increases to 5 MV/cm and 5.88 MV/cm (30 nm SiO2: 4.8 MV/cm), the main current leakage mechanism changes to the Fowler-Nordheim tunneling mechanism, which indicates that the La2O3/SiO2 stacking structure can improve the properties of MOS capacitors.

  7. Effect of variation of I{sub 01}/I{sub 02} on short-circuit current and fill factor of a real solar cell having resistive and current leakage losses

    Energy Technology Data Exchange (ETDEWEB)

    Dadu, M.; Kapoor, A.; Tripathi, K.N. [Department of Electronic Sciences, University of Delhi, South Campus, Benito Juarez Road, -110021 New Delhi (India)

    2001-11-01

    We analyze the effect of variation of I{sub 01}/I{sub 02} on short-circuit current and the fill factor of a solar cell having resistive and current leakage losses. This analysis is particularly important for the polycrystalline solar cells, where higher values of I{sub 02} and hence lower values of I{sub 01}/I{sub 02} can be expected due to the space charge regions associated with the grain boundaries. Also in polycrystalline solar cells, we cannot ignore the effect of series and shunt resistances. It is observed that the value of fill factor depends on R{sub s}, R{sub sh} and I{sub 01}/I{sub 02}, while the value of I{sub sc} depends only on R{sub s} and I{sub 01}/I{sub 02}.

  8. NDT of a Nickel Coated Inconel Specimen Using by the Complex Induced Current - Magnetic Flux Leakage Method and Linearly Integrated Hall Sensor Array

    Energy Technology Data Exchange (ETDEWEB)

    Jun, Jong Woo; Lee, Jin Yi [Chosun University, Gwangju (Korea, Republic of); Park, Duk Keun [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of)

    2007-10-15

    Nondestructive testing (NDT) by using the electromagnetic methods are useful for detecting cracks on the surface and subsurface of the metal. However, when the material contains both ferromagnetic and paramagnetic materials, it is difficult for NDT to detect and analyze cracks using this method. In addition the existence of a partial ferromagnetic material can be incorrectly characterized as a crack in the several cases. On the other hand a large crack has sometimes been misunderstood as a partially magnetized region. Inconel 600 is an important material in atomic energy plant. A nickel film is coated when a crack a appears on an Inconel substrate. Cracks are difficult to detect on the combined material of an Inconel substrate with a nickel film, which are paramagnetic and ferromagnetic material respectively. In this paper, a scan type magnetic camera, which uses a complex induced current-magnetic flux leakage (CIC-MFL) method as a magnetic source and a linearly integrated Hall sensor array (LIHaS) on a wafer as the magnetic sensors, was examined for its ability to detect cracks on the combined material. The evaluation probability of a crack is discussed. In addition the detection probability of the minimum depth was reported

  9. Leakage current conduction, hole injection, and time-dependent dielectric breakdown of n-4H-SiC MOS capacitors during positive bias temperature stress

    Science.gov (United States)

    Samanta, Piyas; Mandal, Krishna C.

    2017-01-01

    The conduction mechanism(s) of gate leakage current JG through thermally grown silicon dioxide (SiO2) films on the silicon (Si) face of n-type 4H-silicon carbide (4H-SiC) has been studied in detail under positive gate bias. It was observed that at an oxide field above 5 MV/cm, the leakage current measured up to 303 °C can be explained by Fowler-Nordheim (FN) tunneling of electrons from the accumulated n-4H-SiC and Poole-Frenkel (PF) emission of trapped electrons from the localized neutral traps located at ≈2.5 eV below the SiO2 conduction band. However, the PF emission current IPF dominates the FN electron tunneling current IFN at oxide electric fields Eox between 5 and 10 MV/cm and in the temperature ranging from 31 to 303 °C. In addition, we have presented a comprehensive analysis of injection of holes and their subsequent trapping into as-grown oxide traps eventually leading to time-dependent dielectric breakdown during electron injection under positive bias temperature stress (PBTS) in n-4H-SiC metal-oxide-silicon carbide structures. Holes were generated in the heavily doped n-type polycrystalline silicon (n+-polySi) gate (anode) as well as in the oxide bulk via band-to-band ionization by the hot-electrons depending on their energy and SiO2 film thickness at Eox between 6 and 10 MV/cm (prior to the intrinsic oxide breakdown field). Transport of hot electrons emitted via both FN and PF mechanisms was taken into account. On the premise of the hole-induced oxide breakdown model, the time- and charge-to-breakdown ( tBD and QBD ) of 8.5 to 47 nm-thick SiO2 films on n-4H-SiC were estimated at a wide range of temperatures. tBD follows the Arrhenius law with activation energies varying inversely with initial applied constant field Eox supporting the reciprocal field ( 1 /E ) model of breakdown irrespective of SiO2 film thicknesses. We obtained an excellent margin (6.66 to 6.33 MV/cm at 31 °C and 5.11 to 4.55 MV/cm at 303 °C) of normal operating field for a 10

  10. 基于大涡模拟的轴流泵叶顶泄漏涡瞬态特性分析%Analysis on transient characteristics of tip leakage vortex in axial flow pump using large eddy simulation

    Institute of Scientific and Technical Information of China (English)

    张德胜; 石磊; 陈健; 耿琳琳; 吴苏青

    2015-01-01

    为了深入掌握轴流泵叶顶区湍流特性,采用大涡模拟方法对某一模型轴流泵内部非定常流动进行了数值模拟。根据时域和频域特性图,分析间隙内压差和泄漏速度之间的关联现象,讨论了叶顶间隙内泄漏流的瞬态特性。根据三维泄漏涡结构,揭示了轴流泵叶顶区不同类型的涡系,叶顶泄漏涡带在剪切层内涡丝动力的驱动下逐渐变长,然后与射流剪切层分离;叶顶间隙内涡团的瞬态变化大于叶顶泄漏涡的周期性变化,导致剪切层内的小尺度涡的生成周期时间较短,其在主泄漏涡带上方形成了小尺度泄漏流涡带。从叶顶轴平面的涡结构可发现,随着弦长系数的增大,剪切层内的分离涡不断被分离并且被叶顶泄漏涡卷吸,在主泄漏涡向相邻叶片压力面的运动过程中,其涡量不断减小,并且在转轮室端壁面附近不断诱导各种尺度的涡产生。%Numerical analysis of the unsteady flow in an axial flow pump was conducted to understand deeply the characteristics of turbulence in the tip region via LES (large eddy simulation) in ANSYS CFX. Such an understanding was critical to predict and eventually control cavitation and noise as well as vibration in liquid handling systems such as pumps and propellers, and improve their performance. Compared with the conventional numerical methods, LES provided the most promising and feasible alternative to compute the unsteady velocity and pressure fields. In this paper, LES method with large mesh-size requirement was used for studying the transient characteristics of the tip leakage flow and leakage vortex. Some significant conclusions were obtained by the simulation. The responsibility of different flow rate for variation of average head and efficiency calculated by LES had little discrepancy with the experimental values in the low-head axial flow pump model, especially at flow rate condition. A combination of

  11. Current Amplification Characteristics of BJT on Fast Neutron Irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Ahn, Sung Ho; Sun, Gwang Min; Baek, Hani [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of)

    2016-10-15

    BJT (Bipolar Junction Transistor) is a three-terminal device with an important feature in that the current through two terminals can be controlled by small changes we make in the current or voltage at the third terminal. This control feature allows us to amplify small AC signals or to switch the device from an on state and off state and back. Fast neutron irradiation incurs lattice damage in bulk Si. The recombination rate of minority carriers and register are increased by the lattice damage. This study will investigate the current amplification characteristics of a pnp Si BJT through fast neutron irradiation experiments. In this paper, the current amplification characteristics of a pnp Si BJT were investigated for fast neutron irradiation. The experimental results show that base-tocollector current amplification ratio is decreased with an increase in the fast neutron irradiation. These indicate that the lattice damage caused by fast neutron irradiation increases the recombination rate of minority carriers and resistor.

  12. Current-voltage characteristics of carbon nanotubes with substitutional nitrogen

    DEFF Research Database (Denmark)

    Kaun, C.C.; Larade, B.; Mehrez, H.;

    2002-01-01

    We report ab initio analysis of current-voltage (I-V) characteristics of carbon nanotubes with nitrogen substitution doping. For zigzag semiconducting tubes, doping with a single N impurity increases current flow and, for small radii tubes, narrows the current gap. Doping a N impurity per nanotube...... unit cell generates a metallic transport behavior. Nonlinear I-V characteristics set in at high bias and a negative differential resistance region is observed for the doped tubes. These behaviors can be well understood from the alignment/mis-alignment of the current carrying bands in the nanotube leads...... due to the applied bias voltage. For a armchair metallic nanotube, a reduction of current is observed with substitutional doping due to elastic backscattering by the impurity....

  13. Experimental Study on Current Decay Characteristics of Persistent Current HTS Magnet by Alternating Magnetic Field

    Science.gov (United States)

    Park, Young Gun; Lee, Chang Young; Hwang, Young Jin; Lee, Woo Seung; Lee, Jiho; Jo, Hyun Chul; Chung, Yoon Do; Ko, Tae Kuk

    This paper deals with a current decay characteristics of a high temperature superconducting (HTS) magnet operated in persistent current mode (PCM). In superconducting synchronous machine applications such as linear synchronous motor (LSM), the superconducting coil is designed to operate in the PCM to obtain steady magnetic field with DC transport current. This superconducting magnet operates on a direct current, but it can be exposed to alternating magnetic field due to the armature winding. When the magnet is subjected to an external time-varying magnetic field, it is possible to result in a decay of the current in PCM system due to AC loss. In this research, a PCM system with armature coil which generates time-varying magnetic field was fabricated to verify current decay characteristics by external alternating magnetic field. The current decay rate was measured by using a hall sensor as functions of amplitude and frequency of armature coil.

  14. Study on GaN buffer leakage current in AlGaN/GaN high electron mobility transistor structures grown by ammonia-molecular beam epitaxy on 100-mm Si(111)

    Energy Technology Data Exchange (ETDEWEB)

    Ravikiran, L.; Radhakrishnan, K., E-mail: ERADHA@e.ntu.edu.sg; Ng, G. I. [NOVITAS-Nanoelectronics, Centre of Excellence, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798 (Singapore); Munawar Basha, S.; Dharmarasu, N.; Agrawal, M.; Manoj kumar, C. M.; Arulkumaran, S. [Temasek Laboratories@NTU, Nanyang Technological University, Singapore 637553 (Singapore)

    2015-06-28

    The effect of carbon doping on the structural and electrical properties of GaN buffer layer of AlGaN/GaN high electron mobility transistor (HEMT) structures has been studied. In the undoped HEMT structures, oxygen was identified as the dominant impurity using secondary ion mass spectroscopy and photoluminescence (PL) measurements. In addition, a notable parallel conduction channel was identified in the GaN buffer at the interface. The AlGaN/GaN HEMT structures with carbon doped GaN buffer using a CBr{sub 4} beam equivalent pressure of 1.86 × 10{sup −7} mTorr showed a reduction in the buffer leakage current by two orders of magnitude. Carbon doped GaN buffers also exhibited a slight increase in the crystalline tilt with some pits on the growth surface. PL and Raman measurements indicated only a partial compensation of donor states with carbon acceptors. However, AlGaN/GaN HEMT structures with carbon doped GaN buffer with 200 nm thick undoped GaN near the channel exhibited good 2DEG characteristics.

  15. 隧道衬砌渗漏水红外辐射特征影响因素试验研究%EXPERIMENTAL STUDY OF FACTORS AFFECTING THERMAL INFRARED RADIATION CHARACTERISTICS OF TUNNEL LINING WATER LEAKAGE

    Institute of Scientific and Technical Information of China (English)

    豆海涛; 黄宏伟; 薛亚东

    2011-01-01

    In light of infrared thermal imaging of tunnel leakage detection. The factors such as temperature and flow of water leakage, water leakage location, materials of lining surface and so on. Affecting thermal infrared radiation of water leakage are summarized. The concrete specimen is used to simulate water leakage of tunnel lining. The infrared radiation characteristics are recorded and analyzed using infrared thermal imager; and the influencing law is studied. The experimental results are as follows: Thermal image presents temperature of water leakage decreasing along water flow direction, while temperature along water flow cross-section showing parabolic distribution. With the increasing water leakage flow and temperature difference, decreasing angle between horizontal surface and leakage surface, decreasing emissivity of leakage surface and temperature of leakage points increasing linearly, the temperature gradient along water flow direction increases linearly, but the temperature gradient along water flow cross-section decreases. In addition, as for the infrared radiation characteristics with different surface materials, the emissivity correction indicator is established; and the leakage characteristics of infrared thermal images are extracted with Matlab image processing program. The results show that the shape and size of water leakage after modified agree well with the actual one. The study results can provide basis and means for rapid detection and analysis in tunnel operation using infrared thermal imaging technology.%针对隧道渗漏水红外热成像检测问题,总结渗漏水红外辐射特征的影响因素(渗漏温差、流量、位置以及衬砌表面材料等),采用室内混凝土试块注水模拟各工况下隧道衬砌渗漏水,并利用红外热像仪记录分析渗漏水的红外辐射特征,研究不同因素对渗漏水红外辐射特征的影响规律.试验结果表明:渗漏水热图像呈现水流方向温度递减,水流横断面

  16. 基于TMS320F2812泄漏电流测试系统的设计%Design of leakage current test system based on TMS320F2812

    Institute of Scientific and Technical Information of China (English)

    刘建利; 李东

    2012-01-01

    Leakage current is the most important parameter index in comprehensive test of electrical safety performance. To meet the need of designing multi-standard and multi-type leakage current test system, a leakage current test system based on TMS320F2812 is introduced. The principle and methods of leakage current test system are discussed, and the TMS320F2812 collects data and communicates with computer based on signal adjusting circuit of leakage current with single human body impedance networks are elaborated. The design and implementation of the whole test system is completed based on both hardware and software. Some experimental evidence and analysis of results are performed. Through researching the test system technology, it can greatly reduce the cost of the products and improve the test accuracy. It has significance for the level of leakage current test technology in our country.%泄漏电流是电气安全性能测试最关键的参数,为了设计满足多标准、多种类型泄漏电流测试系统的要求,主要介绍了以TMS320F2812为核心的泄漏电流测试系统,讲述了泄漏电流的测试原理和测试方法,详细讲述了采取单一人体阻抗网络的泄漏电流信号调理电路,采用TMS320F2812进行数据采集以及与计算机进行数据通信,从软硬件方面完成整个测试系统的设计与实现.通过该测试系统的技术研究,可以节省产品成本,提高测试精度,对于我国的泄漏电流测试技术水平有着重要的意义.

  17. Junction leakage measurements with micro four-point probes

    DEFF Research Database (Denmark)

    Lin, Rong; Petersen, Dirch Hjorth; Wang, Fei

    2012-01-01

    We present a new, preparation-free method for measuring the leakage current density on ultra-shallow junctions. The junction leakage is found by making a series of four-point sheet resistance measurements on blanket wafers with variable electrode spacings. The leakage current density is calculate...

  18. Photovoltaic combiner box system based on DC leakage current detection%基于直流漏电流检测的光伏汇流箱系统

    Institute of Scientific and Technical Information of China (English)

    陈鸣; 肖慧明

    2016-01-01

    A novel method of detecting the ground leakage current by photovoltaic DC system to explore the positive and negative poles’earth resistance of the photovoltaic circuit and judge the earth fault branch of the photovoltaic circuit is pro⁃posed,which takes C8051F020 as the control center. A novel photovoltaic DC grounding detection system was developed. The current detection function of photovoltaic confluence is used to search which branche in the photovoltaic array has different cur⁃rent value,and find out the earth fault of the photovoltaic array circuit in combination with the detected positive and negative poles’earth resistance of the photovoltaic circuit. It is unnecessary to add any signals to the photovoltaic branches in this meth⁃od. This method has no adverse effect on the photovoltaic system. The detection results are not affected by the distribution capaci⁃tance,and is relatively simple.%以C8051F020型单片机为控制中心,采用一种通过检测光伏直流系统对地漏电流来探测光伏回路正负极接地电阻和判断光伏回路接地故障支路的新方法,研制出新的光伏直流接地探测系统。利用光伏汇流的电流检测功能,寻找出光伏阵列电流数值不同的支路,结合探测光伏回路正负极接地电阻,从而发现光伏阵列回路的对地故障。该方法无须给光伏支路施加任何信号,对光伏系统无任何不良影响,检测结果不受分布电容的影响,检测电路相对简单。

  19. Current limiting level-time characteristic of a superconducting fault current limiter

    Science.gov (United States)

    Tang, Y. J.; Yokomizu, Y.; Hayakawa, N.; Matsumura, T.; Okubo, H.; Kito, Y.

    A model superconducting fault current limiter (SE-FCL) has been developed. The adopted superconducting cable is composed of six strands insulated from each other. The current limiting level of the SC-FCL is measured under two types of overcurrent, a sinusoidal and an inrush current. The results show that the current limiting level of the SC-FCL Iq increases with an increase in the rate of rise of the overcurrent. By introducing a new parameter of time-to-quench tf, it is found that Iq increases with decreasing tf. This feature is taken as a current limiting level-time characteristic i.e. the Iq- tf characteristic. The existence of the Iq- tf characteristic found in the SC-FCL is qualitatively explained by measuring current distribution among the six strands. The superconducting cable is driven to the normal state strand by strand. Some delay in time is found from the quench of the first strand to that of the last and this is recognized as an Iq- tf characteristic in its current limiting performance.

  20. Anti-jamming Performance Analysis of Communication Based on Leakage Current Meter%基于泄漏电流仪通讯的抗干扰性能分析

    Institute of Scientific and Technical Information of China (English)

    夏弘毅; 钱晓耀; 张忆汝; 金叶丹

    2016-01-01

    In order to design computer to control leakage current meter, connection of RS232 communication is established. But it is found that there is interference in the electromagnetic compatibility test, therefore, the comparison of the wired and wireless communication between host computer and leakage current meter is carried out. The communication capability evaluation from the view of anti-disturbance is designed to evaluate the anti-interference test platform of intelligent leak current instrument set up at the present stage, so as to ensure the reliability of the communication between host computer and leakage current meter.%为设计计算机对泄漏电流仪的控制,建立了RS232通讯的连接,但发现在进行电磁兼容测试时有干扰,因此开展了对计算机上位机和泄漏电流仪间有线、无线通讯的测试比较,从抗干扰情况角度进行通讯能力评价,旨在评价现阶段所搭建的智能泄漏电流仪的抗干扰测试平台,从而以保证计算机上位机与泄漏电流仪通讯的可靠性。

  1. The Relationship between Excessive Leakage Current, Large Thermal Resistance and Voids Rate%功率VDMOS器件漏电流、热阻与软焊料空洞率的关系∗

    Institute of Scientific and Technical Information of China (English)

    谭稀; 蒲年年; 徐冬梅; 崔卫兵; 王磊; 朱宇鹏; 柴彦科; 刘肃

    2015-01-01

    Commercialized VDMOS failed to meet designed values for many reasons. Usual problems are excessive leakage current and large thermal resistance. Failed VDMOS was characterized using X-RAY,SEM and EDS. The relationship between excessive leakage current, large thermal resistance and voids rate was acquired. The results show leakage current and thermal resistance increase in direct proportion to voids rate when voids rate keeps in a low level, while the ratio changes. We attribute this to different dilatation coefficient and thermal conductivity of each material,as well as low thermal conductivity of air. Moreover,large thermal resistance will facilitate migration of Al and polluted ion,which causes increasing leakage current in turn.%现在被广泛应用的VDMOS器件存在诸多失效模式,主要表现为直流参数大漏电和热阻过高问题,限制了器件应用。通过对其失效器件进行X-RAY、SEM、EDS分析表征得到相关规律。研究结果表明空洞率相对较小时,漏电流大小、热阻值高低均与空洞率成正相关关系,只是随空洞率增长的趋势有所变化。构成器件的不同材料膨胀系数与导热率不同以及空气导热率较低是空洞率引起热阻值改变的主要原因;高热阻加速了Al的电迁移和可动污染离子移动,最终导致器件漏电流增大。

  2. Mechanism for leakage current conduction in manganese doped Bi{sub 3.25}La{sub 0.75}Ti{sub 3}O{sub 12} (BLT) ferroelectric thin films

    Energy Technology Data Exchange (ETDEWEB)

    Gautam, Prikshit, E-mail: pgautam.physics.du@gmail.com [Department of Physics and Astrophysics, University of Delhi, Delhi 110007 (India); Singh, Sushil K. [Functional Materials Division, SSPL, Timarpur, New Delhi 110054 (India); Tandon, R.P. [Department of Physics and Astrophysics, University of Delhi, Delhi 110007 (India)

    2014-09-01

    Highlights: • Mn doped Bi{sub 3.25}La{sub 0.75}Ti{sub 3}O{sub 12} (BLT) thin films prepared by chemical solution deposition technique. • Well saturated hysteresis loops are obtained for all the samples. • Charge transport phenomena in BLT and first time in Mn doped BLT thin films studied. • Conduction mechanisms viz Schottky, Modified Schottky, Poole–Frenkel, Lampert’s theory studied. • Lampert’s theory in an insulator with traps found to be the leakage current conduction mechanism in these films. - Abstract: Bi{sub 3.25}La{sub 0.75}Ti{sub 3}O{sub 12} (BLT) is one of the prospective candidate materials for data storage devices application. In order to understand the leakage current conduction mechanism in BLT we have studied Mn doped Bi{sub 3.25}La{sub 0.75}Ti{sub 3}O{sub 12} (BLT) thin films with varying concentration of Mn. These films were prepared by chemical solution deposition technique. The structure and phase analysis of these films was performed at room temperature by X-ray diffraction, and scanning electron microscope was used to investigate the surface morphology. Different leakage current conduction mechanisms, e.g., Schottky emission, Modified Schottky, Poole–Frenkel emission and space charge limited (Lampert’s theory) conduction were examined to explain the true nature of charge transport phenomena in BLT and Mn doped BLT thin films. It was found that BLT and Mn doped BLT thin films leakage current conduction mechanism follows the Lampert’s theory of space charge limited conduction in an insulator with traps.

  3. Branching in current-voltage characteristics of intrinsic Josephson junctions

    Energy Technology Data Exchange (ETDEWEB)

    Shukrinov, Yu M [BLTP, JINR, Dubna, Moscow Region, 141980 (Russian Federation); Mahfouzi, F [Institute for Advanced Studies in Basic Sciences, PO Box 45195-1159, Zanjan (Iran, Islamic Republic of)

    2007-02-15

    We study branching in the current-voltage characteristics of the intrinsic Josephson junctions of high-temperature superconductors in the framework of the capacitively coupled Josephson junction model with diffusion current. A system of dynamical equations for the gauge-invariant phase differences between superconducting layers for a stack of ten intrinsic junctions has been numerically solved. We have obtained a total branch structure in the current-voltage characteristics. We demonstrate the existence of a 'breakpoint region' on the current-voltage characteristics and explain it as a result of resonance between Josephson and plasma oscillations. The effect of the boundary conditions is investigated. The existence of two outermost branches and correspondingly two breakpoint regions for the periodic boundary conditions is shown. One branch, which is observed only at periodic boundary conditions, corresponds to the propagating of the plasma mode. The second one corresponds to the situation when the charge oscillations on the superconducting layers are absent, excluding the breakpoint. A time dependence of the charge oscillations at breakpoints is presented.

  4. Branching in current voltage characteristics of intrinsic Josephson junctions

    Science.gov (United States)

    Shukrinov, Yu M.; Mahfouzi, F.

    2007-02-01

    We study branching in the current-voltage characteristics of the intrinsic Josephson junctions of high-temperature superconductors in the framework of the capacitively coupled Josephson junction model with diffusion current. A system of dynamical equations for the gauge-invariant phase differences between superconducting layers for a stack of ten intrinsic junctions has been numerically solved. We have obtained a total branch structure in the current-voltage characteristics. We demonstrate the existence of a 'breakpoint region' on the current-voltage characteristics and explain it as a result of resonance between Josephson and plasma oscillations. The effect of the boundary conditions is investigated. The existence of two outermost branches and correspondingly two breakpoint regions for the periodic boundary conditions is shown. One branch, which is observed only at periodic boundary conditions, corresponds to the propagating of the plasma mode. The second one corresponds to the situation when the charge oscillations on the superconducting layers are absent, excluding the breakpoint. A time dependence of the charge oscillations at breakpoints is presented.

  5. Short-circuit Current Characteristics of Wind Generators

    Institute of Scientific and Technical Information of China (English)

    2012-01-01

    To study the effects of wind generators on distribution system protection, the short-circuit current (SCC) characteristics of wind generators is important. Although there are many researches on the issue, a clear agreement has not been reached so far. The SCC characteristics for different wind generators are studied. PSCAD simulation is performed in the same system integrated with different kinds of wind generators, and their results are compared with those reported in IEEE papers. The detection possibility by overcurrent relay (OCR) is discussed based on the simulation results.

  6. Current-Voltage Characteristics of Molecular Devices at Low Bias

    Institute of Scientific and Technical Information of China (English)

    LIAO Yun-Xing; CHEN Hao; R.Note; H.Mizuseki; Y.Kawazoe

    2004-01-01

    We use density functional theory and the Green function formalism with charge energy effect included in the self-consistent calculation of the Ⅰ- Ⅴ characteristics of a single benzene ring with an appendage of cf3, and identify some interesting properties of the Ⅰ-Ⅴ characteristics at low bias. The molecule picks up a fractional charge at zero bias, then the additional fractional charge produces a barrier on the junction of the molecule and contacts to perturb current flow on the molecule. This phenomenon may be useful for the design of future molecular devices.

  7. Measurement Method for Leakage Current of Insulator String Applying LED Optical Fiber Sensor%采用LED光纤传感器的绝缘子串泄漏电流测量方法

    Institute of Scientific and Technical Information of China (English)

    姚陈果; 王建; 冉启华; 李成祥; 米彦

    2012-01-01

    Measuring the leakage current of insulator strings is currently one of the principal means to monitor the contamination level of transmission lines insulator surface;however,due to the complex environment of transmission lines,a large amount of electromagnetic interference will produce much noise at the time of collecting leakage current.Therefore,in order to improve the anti-jamming and accuracy when sensors were used to measure insulator leakage current,an optical fiber sensor was employed to measure leakage current of the insulator strings,in which light emitting diode(LED) was used to detect the current signal as the photoelectric conversion and light signal stability.Taking three-piece XP-160 insulator strings as examples when ρESDD was 0.05~0.2 mg/cm2 and humidity was 85%,we increased the voltage gradually to obtain the leakage current.Results reveal that the optical fiber sensor can achieve selective measurement of leakage current,the positive half cycle or negative half cycle,and the full cycle current can be monitored after differential circuit is improved.Its zero-extinct period is less than 1 ms and response time is limited in 0.1 ms,and its sensitivity reaches 40 V/A.The pertinence coefficients of linear fitting are all higher than 99.94%,and its frequency response is 1~10 kHz,which can meet the basic requirements of the leakage current measurement.%测量绝缘子串的泄漏电流是目前监测输电线路绝缘子串表面污秽状态的主要手段之一,然而由于输电线路环境的复杂性,常常会伴生出大量的电磁干扰,会在泄漏电流的采集源头产生噪声从而导致采集失真。为提高传感器测量绝缘子泄漏电流的抗干扰能力和准确度,采用廉价稳定的光学器件—发光二极管(light emitting diode,LED)设计并制作了1套光纤传感器装置,利用光电转换和光信号的稳定性,以3片XP-160绝缘子串为试验对象,取盐密为0.05~0.2mg/cm2,

  8. The Wave and Current Characteristic at Eretan, Indramayu

    Directory of Open Access Journals (Sweden)

    Hadikusumah

    2009-11-01

    Full Text Available Erosion process occurs in many places, but each of these processes have their respective characteristics. The purpose of research for understanding the dynamics of the process that caused the coastline of the interaction between air, sea and land. Research has been conducted in Eretan, Indramayu in 2006. The results show the average wave height (H1/3 in February obtained higher (60.4 cm compared with August (23.6 cm and in May obtained a much lower (5.7 cm. Current velocity in February and in August obtained dominant raised due to by field of wave and the influence of tidal currents do not exist. Instead current velocity obtained in May was raised by the dominant tidal currents and very small currents generated by the wave field. The influence of the wave field to the velocity and direction of flow will distribute sediment transport in the area of wave breack (breack water to the coastline. Characteristic wave has a period of 3, 5, and 7 second is the trigger shoreline retreat 1.5 m/year.

  9. Flow and leakage characteristics of a sashless inclined air-curtain (sIAC) fume hood containing tall pollutant-generation tanks.

    Science.gov (United States)

    Chen, Jia-Kun; Huang, Rong Fung; Hung, Wei-Lun

    2013-01-01

    In many fume hood applications, pollutant-generation devices are tall. Human operators of a fume hood must stand close to the front of the hood and lift up their hands to reach the top opening of the tall tank. In this situation, it is inconvenient to access the conventional hood because the sash acts as a barrier. Also, the bluff-body wake in front of the operator's chest causes a problem. By using laser-assisted smoke flow visualization and tracer-gas test methods, the present study examines a sashless inclined air-curtain (sIAC) fume hood for tall pollutant-generation tanks, with a mannequin standing in front of the hood face. The configuration of the sIAC fume hood, which had the important element of a backward-inclined push-pull air curtain, was different from conventional configurations. Depending on suction velocity, the backward-inclined air curtain had three characteristic modes: straight, concave, and attachment. A large recirculation bubble covering the area--from the hood ceiling to the work surface--was formed behind the inclined air curtain in the straight and concave modes. In the attachment mode, the inclined air curtain was attached to the rear wall of the hood, about 50 cm from the hood ceiling, and bifurcated into up and down streams. Releasing the pollutants at an altitude above where the inclined air curtain was attached caused the suction slot to directly draw up the pollutants. Releasing pollutants in the rear recirculation bubble created a risk of pollutants' leaking from the hood face. The tracer-gas (SF6) test results showed that operating the sIAC hood in the attachment mode, with the pollutants being released high above the critical altitude, could guarantee almost no leakage, even though a mannequin was standing in front of the sashless hood face.

  10. Fault Current Characteristics of the DFIG under Asymmetrical Fault Conditions

    Directory of Open Access Journals (Sweden)

    Fan Xiao

    2015-09-01

    Full Text Available During non-severe fault conditions, crowbar protection is not activated and the rotor windings of a doubly-fed induction generator (DFIG are excited by the AC/DC/AC converter. Meanwhile, under asymmetrical fault conditions, the electrical variables oscillate at twice the grid frequency in synchronous dq frame. In the engineering practice, notch filters are usually used to extract the positive and negative sequence components. In these cases, the dynamic response of a rotor-side converter (RSC and the notch filters have a large influence on the fault current characteristics of the DFIG. In this paper, the influence of the notch filters on the proportional integral (PI parameters is discussed and the simplified calculation models of the rotor current are established. Then, the dynamic performance of the stator flux linkage under asymmetrical fault conditions is also analyzed. Based on this, the fault characteristics of the stator current under asymmetrical fault conditions are studied and the corresponding analytical expressions of the stator fault current are obtained. Finally, digital simulation results validate the analytical results. The research results are helpful to meet the requirements of a practical short-circuit calculation and the construction of a relaying protection system for the power grid with penetration of DFIGs.

  11. Current-voltage characteristics of borophene and borophane sheets.

    Science.gov (United States)

    Izadi Vishkayi, Sahar; Bagheri Tagani, Meysam

    2017-08-16

    Motivated by recent experimental and theoretical research on a monolayer of boron atoms, borophene, the current-voltage characteristics of three different borophene sheets, 2Pmmn, 8Pmmn, and 8Pmmm, are calculated using density functional theory combined with the nonequilibrium Green's function formalism. Borophene sheets with two and eight atoms in a unit cell are considered. Their band structure, electron density, and structural anisotropy are analyzed in detail. The results show that the 8Pmmn and 8Pmmm structures that have eight atoms in the unit cell have less anisotropy than 2Pmmn. In addition, although 8Pmmn shows a Dirac cone in the band structure, its current is lower than that of the other two. We also consider a fully hydrogenated borophene, borophane, and find that the hydrogenation process reduces the structural anisotropy and the current significantly. Our findings reveal that the current-voltage characteristics of the borophene sheets can be used to detect the type and the growth direction of the sample because it is strongly dependent on the direction of the electron transport, anisotropy, and details of the unit cell of the borophene.

  12. Improved analytical current voltage characteristics of a solar cell

    Energy Technology Data Exchange (ETDEWEB)

    Yli-Koski, M.; Tuominen, E.; Acerbis, M.; Sinkkonen, J.

    1997-12-31

    Application of the Green`s function method to the calculation of the current voltage characteristics of a pn-junction solar cell makes possible to extract more reliable and exact information about the behavior of the cell. With this method not only the minority carrier diffusion currents but also the drift currents in quasi- neutral regions of the solar cell can be taken into consideration. Furthermore, this approach is not limited to an exponentially decaying minority carrier generation function but is valid for any type of optical generation. In addition, the injection boundary condition is exploited with the result that not only the pn-diode current but also the current resulting from the optical generation depends on the voltage of the solar cell. Applying the method also gives the so called position dependent collection efficiency function which is defined as the probability that an electron-hole pair created at a certain point inside the solar cell will contribute to the current leaving the cell. (orig.) 15 refs.

  13. AlGaN/GaN 高电子迁移率晶体管漏电流退化机理研究*%Degradation mechanism of leakage current in AlGaN/GaN high electron mobility transistors*

    Institute of Scientific and Technical Information of China (English)

    任舰; 闫大为; 顾晓峰

    2013-01-01

      本文首先制备了与 AlGaN/GaN 高电子迁移率晶体管(HEMT)结构与特性等效的 AlGaN/GaN 异质结肖特基二极管,采用步进应力测试比较了不同栅压下器件漏电流的变化情况,然后基于电流-电压和电容-电压测试验证了退化前后漏电流的传输机理,并使用失效分析技术光发射显微镜(EMMI)观测器件表面的光发射,研究了漏电流的时间依赖退化机理。实验结果表明:在栅压高于某临界值后,器件漏电流随时间开始增加,同时伴有较大的噪声。将极化电场引入电流与电场的依赖关系后,器件退化前后的 log(IFP/E)与√E 都遵循良好的线性关系,表明漏电流均由电子 Frenkel-Poole (FP)发射主导。退化后 log(IFP/E)与√E 曲线斜率的减小,以及利用 EMMI 在栅边缘直接观察到了与缺陷存在对应关系的“热点”,证明了漏电流退化的机理是:高电场在 AlGaN 层中诱发了新的缺陷,而缺陷密度的增加导致了 FP 发射电流 IFP 的增加。%In order to study the degradation mechanism of leakage current in AlGaN/GaN high electron mobility transistors (HEMTs), we have fabricated AlGaN/GaN heterojunction Schottky diodes having equivalent structure and characteristics to AlGaN/GaN HEMTs. Step stress tests were then performed to compare the leakage current changes at different gate voltages. The transport mechanism of leakage current before and after degradation was validated based on the current-voltage and capacitance-voltage measurements. The light emission from the device surface was examined by emission microscopy (EMMI) to investigate the time-dependent degradation of leakage current. Experimental results show that the leakage current increases with increasing time and is accompanied by a large noise when the applied gate voltage exceeds a critical value. After introducing the polarization field into the current-field depen-dence, log(IFP/E) exhibits a good

  14. Techniques for Leakage Power Reduction in Nanoscale Circuits: A Survey

    DEFF Research Database (Denmark)

    Liu, Wei

    This report surveys progress in the field of designing low power especially low leakage CMOS circuits in deep submicron era. The leakage mechanism and various recently proposed run time leakage reduction techniques are presented. Two designs from Cadence and Sony respectively, which can represent...... current industrial application of these techniques, are also illustrated....

  15. Land-use Leakage

    Energy Technology Data Exchange (ETDEWEB)

    Calvin, Katherine V.; Edmonds, James A.; Clarke, Leon E.; Bond-Lamberty, Benjamin; Kim, Son H.; Wise, Marshall A.; Thomson, Allison M.; Kyle, G. Page

    2009-12-01

    Leakage occurs whenever actions to mitigate greenhouse gas emissions in one part of the world unleash countervailing forces elsewhere in the world so that reductions in global emissions are less than emissions mitigation in the mitigating region. While many researchers have examined the concept of industrial leakage, land-use policies can also result in leakage. We show that land-use leakage is potentially as large as or larger than industrial leakage. We identify two potential land-use leakage drivers, land-use policies and bioenergy. We distinguish between these two pathways and run numerical experiments for each. We also show that the land-use policy environment exerts a powerful influence on leakage and that under some policy designs leakage can be negative. International “offsets” are a potential mechanism to communicate emissions mitigation beyond the borders of emissions mitigating regions, but in a stabilization regime designed to limit radiative forcing to 3.7 2/m2, this also implies greater emissions mitigation commitments on the part of mitigating regions.

  16. Characteristics of sodium currents in rat geniculate ganglion neurons.

    Science.gov (United States)

    Nakamura, Shiro; Bradley, Robert M

    2011-12-01

    Geniculate ganglion (GG) cell bodies of chorda tympani (CT), greater superficial petrosal (GSP), and posterior auricular (PA) nerves transmit orofacial sensory information to the rostral nucleus of the solitary tract. We have used whole cell recording to investigate the characteristics of the Na(+) channels in isolated Fluorogold-labeled GG neurons that innervate different peripheral receptive fields. GG neurons expressed two classes of Na(+) channels, TTX sensitive (TTX-S) and TTX resistant (TTX-R). The majority of GG neurons expressed TTX-R currents of different amplitudes. TTX-R currents were relatively small in 60% of the neurons but were large in 12% of the sampled population. In a further 28% of the neurons, TTX completely abolished all Na(+) currents. Application of TTX completely inhibited action potential generation in all CT and PA neurons but had little effect on the generation of action potentials in 40% of GSP neurons. Most CT, GSP, and PA neurons stained positively with IB(4), and 27% of the GSP neurons were capsaicin sensitive. The majority of IB(4)-positive GSP neurons with large TTX-R Na(+) currents responded to capsaicin, whereas IB(4)-positive GSP neurons with small TTX-R Na(+) currents were capsaicin insensitive. These data demonstrate the heterogeneity of GG neurons and indicate the existence of a subset of GSP neurons sensitive to capsaicin, usually associated with nociceptors. Since there are no reports of nociceptors in the GSP receptive field, the role of these capsaicin-sensitive neurons is not clear.

  17. Model for Electromagnetic Information Leakage

    OpenAIRE

    Mao Jian; Li Yongmei; Zhang Jiemin; Liu Jinming

    2013-01-01

    Electromagnetic leakage will happen in working information equipments; it could lead to information leakage. In order to discover the nature of information in electromagnetic leakage, this paper combined electromagnetic theory with information theory as an innovative research method. It outlines a systematic model of electromagnetic information leakage, which theoretically describes the process of information leakage, intercept and reproduction based on electromagnetic radiation, and ana...

  18. Predicting Leakage in Labyrinth Seals

    Science.gov (United States)

    Morrison, G. L.; Rhode, D. L.; Cogan, K. C.; Chi, D.; Demko, J.

    1985-01-01

    Analytical and empirical methods evaluated. 264-page report presents comprehensive information on leakage in labyrinth seals. Summarizes previous analyses of leakage, reviews leakage tests conducted by authors and evaluates various analytical and experimental methods of determining leakage and discusses leakage prediction techniques.

  19. Reduction of leakage current by O{sub 2} plasma treatment for device isolation of AlGaN/GaN heterojunction field-effect transistors

    Energy Technology Data Exchange (ETDEWEB)

    Jiang, Ying; Wang, Qingpeng [School of Electronic Science and Technology, Faculty of Electronic Information and Electrical Engineering, Dalian University of Technology, Dalian 116024 (China); Institute of Technology and Science, The University of Tokushima, 2-1 Minami-josanjima, Tokushima 770-8506 (Japan); Zhang, Fuzhe; Li, Liuan [Institute of Technology and Science, The University of Tokushima, 2-1 Minami-josanjima, Tokushima 770-8506 (Japan); Zhou, Deqiu; Liu, Yang [School of Physics and Engineering, Sun Yat-Sen University, 135 Xingang Xi Road, Guangzhou 510275 (China); Wang, Dejun, E-mail: dwang121@dlut.edu.cn [School of Electronic Science and Technology, Faculty of Electronic Information and Electrical Engineering, Dalian University of Technology, Dalian 116024 (China); Ao, Jin-Ping, E-mail: jpao@ee.tokushima-u.ac.jp [Institute of Technology and Science, The University of Tokushima, 2-1 Minami-josanjima, Tokushima 770-8506 (Japan)

    2015-10-01

    Highlights: • The influence of O{sub 2} plasma treatment on mesa region of AlGaN/GaN HFET was studied. • An effective condition of O{sub 2} plasma treatment was confirmed. • The treated GaN surface was characterized by PL spectrum and XPS. • The AlGaN/GaN HFET with an on/off drain current ratio of 1.73 × 10{sup 7} was achieved. • The breakdown voltage of the mesa-isolated region improved. - Abstract: The influence of O{sub 2} plasma treatment on the mesa-isolated region of AlGaN/GaN heterojunction field-effect transistors (HFETs) was studied. The etched surface of the undoped GaN layer was exposed to O{sub 2} plasma generated by a plasma-enhanced chemical vapor deposition system. The current–voltage characteristics indicated that the current of the mesa-isolated region was strongly dependent on the treatment temperature. Treatment with O{sub 2} plasma at 300 °C and 250 W for 15 min was confirmed to be the optimal condition, under which isolation current was reduced by four orders of magnitude and photovoltaic response was suppressed. The photoluminescence spectrum showed a decrease in the density of defects related to the yellow luminescence band and the occurrence of defects related to the blue luminescence band. X-ray photoelectron spectroscopy results showed the formation of Ga{sub 2}O{sub 3} and a possible defect of substitutional oxygen on the nitrogen site O{sub N}. AlGaN/GaN HFETs with an on/off drain current ratio of 1.73 × 10{sup 7} were obtained, and the breakdown voltage of the mesa-isolated region increased from 171.5 to 467.2 V.

  20. The Extraction of Characteristic Quantity of Pulsed Magnetic Flux Leakage Signal of Shallow Defects%浅薄缺陷的脉冲漏磁信号特征量提取

    Institute of Scientific and Technical Information of China (English)

    费骏骉; 左宪章; 田贵云; 张云; 张韬

    2012-01-01

    为提高脉冲漏磁对浅薄缺陷的检测能力,提出了一种处理检测信号的二次差分方法,分离出在涡流效应的阻尼作用下产生的脉冲漏磁信号中的涡流分量,即二次差分信号。从二次差分信号中提取出了浅薄缺陷深度的新特征量——峰值时间Pt,并验证了二次差分方法的可行性。试验结果表明,和信号幅值大小相比,将Pt作为浅薄缺陷特征量,在检测浅薄缺陷时对缺陷深度的分辨率较高,同时能够克服检测探头提离所引起的缺陷特征量分辨率严重下降的问题。%In order to enhance the testing ability of pulsed magnetic flux leakage(PMFL) for shallow defects, the method of second difference for dealing with testing signals was put forward, which separated the eddy current components, namely second differential signals, caused by the damping of eddy current effect from the signals in pulsed magnetic flux leakage. From second differential signals, a new characteristic quantity of the depth of shallow defects--peak time Pt was extracted and the feasibility of the method of second difference was verified. The experimental results showed that compared with the value of signal amplitude, the resolution of the depth of defects was higher while testing shallow defects if Pt was taken as the characteristic quantity of shallow defects and at the same time, the problem of the seriously decreasing resolution of the characteristic quantity of defects caused by the lift--off of the testing probe could be solved.

  1. Identifying Distinguishing Characteristics of Secondary Pyroclastic Density Currents

    Science.gov (United States)

    Isom, S. L.; Brand, B. D.

    2014-12-01

    Pyroclastic density currents (PDCs) are ground-hugging mixtures of volcanic particles and gas that travel down the slopes of erupting volcanoes. The combination of high velocities, high bulk densities (due to particles in the current) and high temperatures make PDCs the most dangerous and deadly hazard associated with explosive volcanism. Secondary explosive phenomenon associated with PDCs, such as inland-directed surges (e.g., Montserrat, 2003) and phreatic explosions (e.g., Mt St Helens 1980) can increase the area affected and duration of the hazard. However, little work has been done on distinguishing the deposits of secondary explosive phenomenon from primary phenomenon. Samples have been acquired from the 1980 Mt St Helens phreatic explosion crater deposits and the 2003 eruptive event at Montserrat where a PDC flowed into the ocean, causing an inland-directed surge (Edmonds and Herd, 2005. Geology 33.4:245-248). The samples will be analyzed via depositional characteristics, granulometry, componentry, microscopic analysis and scanning electron microscope imaging. We hypothesize that thermal cracking or vesicle distortion (e.g., compression or hindered expansion) may occur in hot pyroclasts that enter a body of water, leading to a difference between the ash textures of primary PDCs, phreatic surges and inland-directed surge deposits. Analyzing granulometry and componentry from parent flows and secondary flows may also reveal distinguishing characteristics that will allow us to constrain differences in segregation mechanisms of particles for each phenomenon. Determining distinguishing depositional characteristics of these secondary phenomena is important for assessing their occurrence during past eruptions and identifying conditions conducive to the formation of secondary explosions. This will result in the ability to make more accurate hazard maps for volcanoes prone to explosive activity.

  2. Model for Electromagnetic Information Leakage

    Directory of Open Access Journals (Sweden)

    Mao Jian

    2013-09-01

    Full Text Available Electromagnetic leakage will happen in working information equipments; it could lead to information leakage. In order to discover the nature of information in electromagnetic leakage, this paper combined electromagnetic theory with information theory as an innovative research method. It outlines a systematic model of electromagnetic information leakage, which theoretically describes the process of information leakage, intercept and reproduction based on electromagnetic radiation, and analyzes amount of leakage information with formulas.  

  3. Investigation of Current-Voltage Characteristics of Ni/GaN Schottky Barrier Diodes for Potential HEMT Applications

    Directory of Open Access Journals (Sweden)

    Ashish Kumar

    2011-01-01

    Full Text Available In the present work, the I-V characteristics of Ni/GaN Schottky diodes have been studied. The Schottky diodes, having different sizes using Ni/Au and ohmic contacts using Ti/Al/Ni/Au were made on n-GaN. The GaN was epitaxially grown on c-plane sapphire by metal organic chemical vapor deposition (MOCVD technique and had a thickness of about 3.7 µm. The calculated ideality factor and barrier height from current-voltage (I-V characteristics (at 300 K for two GaN Schottky diodes were close to ~1.3 and ~ 0.8 eV respectively. A high reverse leakage current in the order of 10 – 4A/cm2 (at – 1 V was observed in both diodes. A careful analysis of forward bias I-V characteristics showed very high series resistance and calculation for ideality factor indicated presence of other current transport mechanism apart from thermionic model at room temperature.

  4. Effect of current-voltage characteristics on plasma reforming

    Energy Technology Data Exchange (ETDEWEB)

    Hwang, N. [Univ. of Science and Technology, Daejeon (Korea, Republic of). Environmental System Engineering; Korea Inst. of Machinery and Materials, Daejeon (Korea, Republic of). Environmental System Research Division; Hur, M.; Kim, K.T.; Kim, S.J.; Song, Y.H. [Korea Inst. of Machinery and Materials, Daejeon (Korea, Republic of). Environmental System Research Division

    2010-07-01

    Studies have shown that the energy costs associated with plasma fuel reforming can vary depending on the type of plasma generation technique. The reasons for the different energy costs, however, are not yet clear, since different types of plasma reactor lead to not only different plasma conditions but also lead to different reaction conditions that is not relevant to plasma, such as gas residence time, heat and mass flow conditions. This paper presented the results of a parametric study on methane partial oxidation which was conducted to determine the optimal operating conditions and geometrical design of an arc jet plasma fuel reformer. The arc reactor used in this study was designed to control various operating parameters such as arc length, gas residence time, and gas mixing. Two different types of power supply were tested, notably one that produced high voltage with low current, and one that produced relatively low voltage and high current. The effects of these different voltage-current characteristics on gas reforming process were analyzed based on methane conversion rates, selectivity of products, and thermal efficiencies. The study showed that the input power but not the voltage plays an important role in the present partial oxidation process. The gas residence time was also found to be an important factor in controlling the reformer process. 10 refs., 8 figs.

  5. Analysis of Leakages and Leakage Reduction Methods in UDSM CMOS VLSI Circuits.

    Directory of Open Access Journals (Sweden)

    Sagar Ekade

    2014-04-01

    Full Text Available This is the era of portable devices which need to be powered by battery. Due to scarcity of space and leakages in chips, battery life is a serious concern. As technology advances, scaling of transistor feature size and supply voltage has improved the performance, increased the transistor density and reduced the power required by the chip. The maximum power consumed by the chip is the function of its technology along with its implementation. As technology is scaling down and CMOS circuits are supplied with lower supply voltages, the static power i.e. standby leakage current becomes very crucial. In Ultra Deep-submicron regime scaling has reduced the threshold voltage and that has led to increase in leakage current in sub-threshold region and hence rise in static power dissipation. This paper presents a critical analysis of leakages and leakage reduction techniques.

  6. Detailed characteristics of intermittent current pulses due to positive corona

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Yang, E-mail: liuyangwuh520@sina.com; Cui, Xiang; Lu, Tiebing; Wang, Zhenguo; Li, Xuebao; Xiang, Yu; Wang, Xiaobo [State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources, North China Electric Power University, Beijing 102206 (China)

    2014-08-15

    In order to get detailed characteristics of intermittent current pulses due to positive corona such as the repetition rate of burst-pulse trains, the peak value ratio of the primary pulse to the secondary pulse, the number of pulses per burst, and the interval of the secondary pulses, a systematic study was carried out in a coaxial conductor-cylinder electrode system with the conductor electrode being set with a discharge point. Empirical formulae for the number of pulses per burst and the interval of the secondary pulses are first presented. A theoretical model based on the motion of the space-charge clouds is proposed. Analysis with the model gives explanations to the experimental results and reveals some new insights into the physical mechanism of positive intermittent corona.

  7. Current-voltage characteristics of double-strand DNA sequences

    Science.gov (United States)

    Bezerril, L. M.; Moreira, D. A.; Albuquerque, E. L.; Fulco, U. L.; de Oliveira, E. L.; de Sousa, J. S.

    2009-09-01

    We use a tight-binding formulation to investigate the transmissivity and the current-voltage (I-V) characteristics of sequences of double-strand DNA molecules. In order to reveal the relevance of the underlying correlations in the nucleotides distribution, we compare the results for the genomic DNA sequence with those of artificial sequences (the long-range correlated Fibonacci and Rudin-Shapiro one) and a random sequence, which is a kind of prototype of a short-range correlated system. The random sequence is presented here with the same first neighbors pair correlations of the human DNA sequence. We found that the long-range character of the correlations is important to the transmissivity spectra, although the I-V curves seem to be mostly influenced by the short-range correlations.

  8. Current-voltage characteristics of double-strand DNA sequences

    Energy Technology Data Exchange (ETDEWEB)

    Bezerril, L.M.; Moreira, D.A. [Departamento de Fisica, Universidade Federal do Rio Grande do Norte, 59072-970, Natal-RN (Brazil); Albuquerque, E.L., E-mail: eudenilson@dfte.ufrn.b [Departamento de Fisica, Universidade Federal do Rio Grande do Norte, 59072-970, Natal-RN (Brazil); Fulco, U.L. [Departamento de Biofisica e Farmacologia, Universidade Federal do Rio Grande do Norte, 59072-970, Natal-RN (Brazil); Oliveira, E.L. de; Sousa, J.S. de [Departamento de Fisica, Universidade Federal do Ceara, 60455-760, Fortaleza-CE (Brazil)

    2009-09-07

    We use a tight-binding formulation to investigate the transmissivity and the current-voltage (I-V) characteristics of sequences of double-strand DNA molecules. In order to reveal the relevance of the underlying correlations in the nucleotides distribution, we compare the results for the genomic DNA sequence with those of artificial sequences (the long-range correlated Fibonacci and Rudin-Shapiro one) and a random sequence, which is a kind of prototype of a short-range correlated system. The random sequence is presented here with the same first neighbors pair correlations of the human DNA sequence. We found that the long-range character of the correlations is important to the transmissivity spectra, although the I-V curves seem to be mostly influenced by the short-range correlations.

  9. 模糊物元方法评价区域漏失分布特征%Distribution characteristics evaluation of regional leakage based on fuzzy matter-element

    Institute of Scientific and Technical Information of China (English)

    侯冰; 陈勉; 朱静

    2013-01-01

      根据不同区域地层的漏失特征,建立描述漏失特征的漏失模糊物元指标体系,结合从优隶属度原则分析各漏失模糊物元的权重复合物元,确立每个区域的漏失特征与标准状况的欧氏贴近度的关系,欧氏贴近度越大则该区域漏失量越小,由此评价不同区域漏失分布规律。利用该方法对塔中1号断裂构造带不同区域的4口典型漏失井进行了评价分析,计算结果与实际漏失情况基本相符。该方法为区域地层漏失状况钻前预测提供了新的思路。%Depending on the leakage characteristics of the formation in different regions, leakage fuzzy matter-element indicators are established to describe the characteristics of leakage. Combined with the principle of membership favorably leakage of fuzzy matter-element, the most important complex element is analyzed. We can calculate the leakage characteristics of each region with the Euclidean proximity of standard conditions and effectively evaluate the distribution method of the leakage distribution in different regions.. Using fuzzy matter-element method, we have evaluated and analyzed the different leakage formation in the area of faults of the Tazhong I and verified that the index system and fuzzy recognition method are reasonable and scientific.

  10. 边缘注入对H型栅SOI pMOSFETs亚阈值泄漏电流的影响%Influence of Edge Implant on Subthreshold Leakage Current of H-Gate SOI pMOSFETs

    Institute of Scientific and Technical Information of China (English)

    吴峻峰; 李多力; 毕津顺; 薛丽君; 海潮和

    2006-01-01

    就不同边缘注入剂量对H型栅SOI pMOSFETs亚阈值泄漏电流的影响进行了研究.实验结果表明不足的边缘注入将会产生边缘背栅寄生晶体管,并且在高的背栅压下会产生明显的泄漏电流.分析表明尽管H型栅结构的器件在源和漏之间没有直接的边缘泄漏通路,但是在有源扩展区部分,由于LOCOS技术引起的硅膜减薄和剂量损失仍就促使了边缘背栅阈值电压的降低.%The research on the influence of edge implant on subthreshold leakage current of H-gate SOI pMOSFETs doses was made. The experimental results show that insufficient field implant doses for H-gate pMOSFETs devices will lead to an observable edge back-gate transistor and obvious subthreshold leakage current of the device under a higher back gate bias. The analysis of device structure and process simulation demonstrate that although this kind of devices has no direct edge leakage path between source and drain, thinning of silicon film and dose loss induced by LOCOS technology can still cause the lowered threshold voltage of back gate in edge parts without enough edge implant.

  11. Current-voltage-temperature characteristics of DNA origami

    Energy Technology Data Exchange (ETDEWEB)

    Bellido, Edson P; Bobadilla, Alfredo D; Rangel, Norma L; Seminario, Jorge M [Department of Chemical Engineering, Texas A and M University, College Station, TX 77843 (United States); Zhong Hong; Norton, Michael L [Department of Chemistry, Marshall University, Huntington, WV 25755 (United States); Sinitskii, Alexander [Department of Chemistry, Rice University, Houston, TX 77005 (United States)

    2009-04-29

    The temperature dependences of the current-voltage characteristics of a sample of triangular DNA origami deposited in a 100 nm gap between platinum electrodes are measured using a probe station. Below 240 K, the sample shows high impedance, similar to that of the substrate. Near room temperature the current shows exponential behavior with respect to the inverse of temperature. Sweep times of 1 s do not yield a steady state; however sweep times of 450 s for the bias voltage secure a steady state. The thermionic emission and hopping conduction models yield similar barriers of {approx}0.7 eV at low voltages. For high voltages, the hopping conduction mechanism yields a barrier of 0.9 eV and the thermionic emission yields 1.1 eV. The experimental data set suggests that the dominant conduction mechanism is hopping in the range 280-320 K. The results are consistent with theoretical and experimental estimates of the barrier for related molecules.

  12. Surface Leakage Mechanisms in III-V Infrared Barrier Detectors

    Science.gov (United States)

    Sidor, D. E.; Savich, G. R.; Wicks, G. W.

    2016-09-01

    Infrared detector epitaxial structures employing unipolar barriers exhibit greatly reduced dark currents compared to simple pn-based structures. When correctly positioned within the structure, unipolar barriers are highly effective at blocking bulk dark current mechanisms. Unipolar barriers are also effective at suppressing surface leakage current in infrared detector structures employing absorbing layers that possess the same conductivity type in their bulk and at their surface. When an absorbing layer possesses opposite conductivity types in its bulk and at its surface, unipolar barriers are not solutions to surface leakage. This work reviews empirically determined surface band alignments of III-V semiconductor compounds and modeled surface band alignments of both gallium-free and gallium-containing type-II strained layer superlattice material systems. Surface band alignments are used to predict surface conductivity types in several detector structures, and the relationship between surface and bulk conductivity types in the absorbing layers of these structures is used as the basis for explaining observed surface leakage characteristics.

  13. The Impact of Statistical Leakage Models on Design Yield Estimation

    Directory of Open Access Journals (Sweden)

    Rouwaida Kanj

    2011-01-01

    Full Text Available Device mismatch and process variation models play a key role in determining the functionality and yield of sub-100 nm design. Average characteristics are often of interest, such as the average leakage current or the average read delay. However, detecting rare functional fails is critical for memory design and designers often seek techniques that enable accurately modeling such events. Extremely leaky devices can inflict functionality fails. The plurality of leaky devices on a bitline increase the dimensionality of the yield estimation problem. Simplified models are possible by adopting approximations to the underlying sum of lognormals. The implications of such approximations on tail probabilities may in turn bias the yield estimate. We review different closed form approximations and compare against the CDF matching method, which is shown to be most effective method for accurate statistical leakage modeling.

  14. 屏蔽法测量金属氧化物避雷器的泄漏电流%Research on Leakage Current Measurement for Metal Oxide Surge Arrester with Shielding Method

    Institute of Scientific and Technical Information of China (English)

    秦锟

    2015-01-01

    Leakage current is an important parameter of characterization of its performance, as the growth of the running time , ex-perimental value will be critical in specification, so that it can not make an accurate judgment. This paper based on the 500 kV pre-ventive test of metal oxide surge arrester as an example, analyzes the influencing factors of leakage current in arrester test and the reason for great error in the conventional test method, proposed in the test with the shielding wire method that is commonly known as shielding arrest test experiment, in order to reduce the measurement error and the workload.%泄漏电流是表征其性能的重要参数,随着运行时间的增长,试验值临界于规程值,不能作出准确的判断。以500 kV金属氧化物避雷器的预防性试验为例,分析了避雷器试验中影响泄漏电流的因素及常规试验方法测量误差大的原因,提出了在试验时用屏蔽线进行避雷器试验的俗称屏蔽法的试验方法,以减小测量误差及工作量。

  15. Enhanced leakage current behavior of Sr{sub 2}Ta{sub 2}O{sub 7-x}/SrTiO{sub 3} bilayer dielectrics for metal-insulator-metal capacitors

    Energy Technology Data Exchange (ETDEWEB)

    Kaynak, C. Baristiran, E-mail: baristiran@ihp-microelectronics.com [IHP Im Technologiepark 25, 15236 Frankfurt Oder (Germany); Lukosius, M.; Costina, I. [IHP Im Technologiepark 25, 15236 Frankfurt Oder (Germany); Tillack, B. [IHP Im Technologiepark 25, 15236 Frankfurt Oder (Germany); Technische Universitaet Berlin, HFT4, Einsteinufer 25, 10587, Berlin (Germany); Wenger, Ch. [IHP Im Technologiepark 25, 15236 Frankfurt Oder (Germany); Ruhl, G. [Infineon Technologies AG, Wernerwerkstr. 2, 93049 Regensburg (Germany); Blomberg, T. [ASM Microchemistry Ltd., Vaeinoe Auerin katu 12 A, 00560 Helsinki (Finland)

    2011-06-30

    Metal-Insulator-Metal (MIM) capacitors are one of the most essential components of radio frequency devices and analog/mixed-signal integrated circuits. In order to obtain high capacitance densities in MIM devices, high-k materials have been considered to be promising candidates to replace the traditional insulators. The challenging point is that the dielectric material must demonstrate high capacitance density values with low leakage current densities. In this work, SrTiO{sub 3} based MIM capacitors have been investigated and the electrical performance of the devices have been optimized by using bilayered systems of Sr{sub 2}Ta{sub 2}O{sub 7-x}/SrTiO{sub 3} with different thicknesses of Sr{sub 2}Ta{sub 2}O{sub 7-x}. Sputtering X-Ray photoelectron spectroscopy (XPS) measurements have been applied to investigate the interfaces between the thin film constituents of the MIM stacks. The optimized bilayered system provides a leakage current density of 8*10{sup -8} A/cm{sup 2} at 2 V (bottom electrode injection) and a high capacitance density of 13 fF/{mu}m{sup 2}.

  16. On-line Monitoring System of Insulator Leakage Current Based on ARM%基于ARM的绝缘子泄漏电流在线监测系统设计

    Institute of Scientific and Technical Information of China (English)

    姜小丰; 胡晓光; 左廷涛

    2011-01-01

    A ceramic insulator has an excellent anti-pollution properties, but sometimes flashover occurs on it and then the outage of power network follows. This paper analyzes the formation mechanism of flashover and the result is that the RMS of leakage current (LC) and discharge pulses reflect the contamination severity approximately. This shows that to a large extent the flashover accident can be avoided by means of monitoring the leakage current value and the discharge pulses. Existing monitoring device for contaminated insulators inspects either leakage currents or discharge pulses, also,it is difficult to meet the requirements of the client for low-power consumption, low cost and high reliability. In this paper, a novel low-power and low-cost online monitoring system is presented, which is based on ARM Cortex-M and Zigbee wireless network high-voltage insulator leakage current. In addition, the monitoring system not only acquires the leakage current and discharge pulses of insulator strings, but also measures the environmental temperature and humidity and then comprehensively analyzes the severity of insulator pollution. After that the results will be displayed on the LCD or sent to the control center through the Zigbee network. Tests show that the monitoring system has good accuracy and good practical performance.%陶瓷绝缘子具有良好的防污特性,但也会发生污秽闪络,导致供电中断.文中分析了污闪的形成机理,认为绝缘子泄漏电流有效值和放电脉冲数可在一定程度上反映出其表面的污秽程度,从而可通过监测泄漏电流值及电脉冲数的方法来有效避免污闪事故的发生.现有的监测装置一般只监测泄漏电流值或电脉冲数中的一项参数,且其功耗和性能都难以达到实用要求,为此,该文设计了一种基于ARM Cortex控制器及Zigbee无线网络的高压绝缘子泄漏电流在线监测系统,系统实时采集绝缘子表面泄漏电流、电脉冲数及环境温

  17. Characteristics of alternating current hopping conductivity in DNA sequences

    Institute of Scientific and Technical Information of China (English)

    Ma Song-Shan; Xu Hui; Wang Huan-You; Guo Rui

    2009-01-01

    This paper presents a model to describe alternating current (AC) conductivity of DNA sequences,in which DNA is considered as a one-dimensional (1D) disordered system,and electrons transport via hopping between localized states.It finds that AC conductivity in DNA sequences increases as the frequency of the external electric field rises,and it takes the form of σac(ω)~ω2 ln2(1/ω).Also AC conductivity of DNA sequences increases with the increase of temperature,this phenomenon presents characteristics of weak temperature-dependence.Meanwhile,the AC conductivity in an off diagonally correlated case is much larger than that in the uncorrelated case of the Anderson limit in low temperatures,which indicates that the off-diagonal correlations in DNA sequences have a great effect on the AC conductivity,while at high temperature the off-diagonal correlations no longer play a vital role in electric transport. In addition,the proportion of nucleotide pairs p also plays an important role in AC electron transport of DNA sequences.For p<0.5,the conductivity of DNA sequence decreases with the increase of p,while for p > 0.5,the conductivity increases with the increase of p.

  18. Hypertension in Latin America: Current perspectives on trends and characteristics.

    Science.gov (United States)

    Ruilope, L M; Chagas, A C P; Brandão, A A; Gómez-Berroterán, R; Alcalá, J J A; Paris, J V; Cerda, J J O

    The region of Latin America, which includes Central America, the Caribbean and South America, is one that is rapidly developing. Signified by socio-economic growth, transition and development over the last few decades, living standards in countries like Brazil and Mexico have improved dramatically, including improvements in education and health care. An important marker of socio-economic change has been the epidemiological shift in disease burden. Cardiovascular disease is now the leading cause of death in Latin America, and the drop in prevalence of infectious diseases has been accompanied by a rise in non-communicable diseases. Hypertension is the major risk factor driving the cardiovascular disease continuum. In this article we aim to discuss the epidemiological and management trends and patterns in hypertension that may be specific or more common to Latin-American populations - what we term 'Latin American characteristics' of hypertension - via a review of the recent literature. Recognizing that there may be a specific profile of hypertension for Latin-American patients may help to improve their treatment, with the ultimate goal to reduce their cardiovascular risk. We focus somewhat on the countries of Brazil, Mexico and Venezuela, the experience of which may reflect other Latin American countries that currently have less published data regarding epidemiology and management practices. Copyright © 2016 SEH-LELHA. Publicado por Elsevier España, S.L.U. All rights reserved.

  19. Zero leakage sealings

    Science.gov (United States)

    Kotesovec, Bernhard; Steinrück, Herbert

    2010-11-01

    The piston rod of a reciprocating compressor is sealed with elastic cylindrical sealing elements. Across the sealings the pressure drops from the operating pressure to the ambient pressure. The lubrication gap between the elastic sealing and reciprocating piston rod is studied with the aim to find conditions of a leakage free sealing. The flow in the lubrication gap and the elastic deformation of the sealing are determined simultaneously. The net-flow during one cycle of the reciprocating piston rod is calculated. It turns out that maintaining zero leakage is very sensible. Indeed the outbound flow during out-stroke has to be equal the inbound flow during the in-stroke. By prescribing a special shape of the undeformed sealing zero leakage can be attained - at least theoretically for certain operating conditions. It turns out that temperature dependent material data and a model for cavitation is necessary. The model, its numerical implementation and results will be discussed.

  20. Analysis of Planar E+I and ER+I Transformers for Low-Voltage High-Current DC/DC Converters with Focus on Winding Losses and Leakage Inductance

    DEFF Research Database (Denmark)

    Pittini, Riccardo; Zhang, Zhe; Ouyang, Ziwei

    2012-01-01

    In this paper an analysis of two planar transformers designed for high-current switching applications is presented. Typical converter application is represented by fuel and electrolyser cell converters. The transformer designs are based on E+I and ER+I planar cores while the analysis focuses...... on winding resistance and leakage inductances which represent the main concerns related to low-voltage high-current applications. The PCB winding design has a one to one turn ratio with no interleaving between primary and secondary windings. The main goal was to determine if ER planar core could provide...... a significant advantage in terms of winding losses compared to planar E cores. Results from finite element analysis highlight that low frequency winding resistance is lower for the ER core since it is dominated by the lower mean turn length however, as the AC-resistance becomes dominating the winding eddy...

  1. Postoperative Urinary Leakage Following Partial Nephrectomy for Renal Mass: Risk Factors and a Proposed Algorithm for the Diagnosis and Management.

    Science.gov (United States)

    Erlich, T; Abu-Ghanem, Y; Ramon, J; Mor, Y; Rosenzweig, B; Dotan, Z

    2017-06-01

    To evaluate the current incidence, risk factors, management, and long-term follow-up of urinary leakage following partial nephrectomy, in order to propose an algorithm for diagnosis and evaluation of postoperative urinary leakage. The study included 752 patients who underwent elective partial nephrectomies for renal masses between the years 1988 and 2013. Patients' demographics, clinico-pathologic variables, and operative details were collected retrospectively. The associations between urinary leakage and patients' variables were assessed by univariate and multivariate analyses. Of the 752 patients, 21 (2.8%) experienced urinary leakage; 4 of the 21 patients with urinary leakage had spontaneous resolution, 1 patient underwent nephrectomy, and 16 patients were treated by retrograde ureteral stents insertion. One of them necessitated insertion of an additional percutaneous nephrostomy and another one deserved concomitant percutaneous drainage of a perirenal urinoma. The average period of time that elapsed from the operation until the insertion of stent was 8.5 ± 4.5 days. Stents were removed 68 ± 20.5 days postoperatively. None of the patients had either persistent or repeated leakage. On univariate analysis, hilar renal masses (p < 0.04) and higher preoperative creatinine levels (p < 0.01) were found to be associated with higher rates of urinary leakage. None of these variables was significant on a multivariate analysis. Review of the urinary leakage rate over time revealed it has been constantly decreasing over time, from 4% in early cases to 1.3% among the most recent ones. None of the preoperative variables that were examined in this study was significantly associated with increased risk of urinary leakage. However, cumulative surgical experience was associated with lower rates of urinary leakage, suggesting that the decrease in its incidence is related to the improved surgical skills, rather than to differences in tumors' or patients

  2. Experiment on Leakage Flow Characteristics of Labyrinth Seal%迷宫密封泄漏特性的试验研究

    Institute of Scientific and Technical Information of China (English)

    李志刚; 郎骥; 李军; 丰镇平

    2011-01-01

    为了研究迷宫密封泄漏特性,设计并搭建了旋转密封试验台,测量了典型迷宫密封在8种压比、5种转速、固定密封间隙下的泄漏量和密封腔室压力.通过数值模拟结果的对比分析,找出了压比、转速对迷宫密封泄漏特性和腔室压力的影响规律.研究结果表明:搭建的旋转密封试验台在迷宫密封泄漏量和密封腔室压力的测量精度上是可靠的;相比于试验结果,数值计算获得的泄漏量和腔室压力的最大相对误差分别为3.25%、3.6%,表明试验与数值结果吻合良好,数值方法可以较准确地预测迷宫密封的泄漏量和腔室压力;相同转速下的流量系数随着压比的提高而增大,小压比下的流量系数增加迅速;相同压比下的转速对流量系数的影响很小,可以忽略;迷宫密封腔室压力系数沿流动方向逐渐减小,密封腔室结构对压力系数影响很大.%A rotating seal test rig with a data acquisition system was designed and established to investigate the leakage behavior of a typical labyrinth seal. The leakage and cavity pressure were measured for the labyrinth seal at eight pressure ratios, four rotational speeds, and a sealing gap.The effects of pressure ratio and rotational speed on the leakage behavior and cavity pressure of the labyrinth seal were examined by experiment and simulation. The results show that the maximum relative deviation of the leakage flow rate and cavity pressure predicted is 3.25% and 3.6%,respectively, compared with the experimental data. The flow coefficient increases with pressure ratio and is more sensitive to the smaller pressure ratio at the same rotational speed. The influence of rotational speed on the flow coefficient is very slight which might be neglected at the same pressure ratio. In addition, the cavity pressure coefficient decreases in the direction of flow and is significantly influenced by the cavity structure.

  3. Water Leakage and Nitrate Leaching Characteristics in the Winter Wheat–Summer Maize Rotation System in the North China Plain under Different Irrigation and Fertilization Management Practices

    Directory of Open Access Journals (Sweden)

    Shufeng Chen

    2017-02-01

    Full Text Available Field experiments were carried out in Huantai County from 2006 to 2008 to evaluate the effects of different nitrogen (N fertilization and irrigation management practices on water leakage and nitrate leaching in the dominant wheat–maize rotation system in the North China Plain (NCP. Two N fertilization (NF1, the traditional one; NF2, fertilization based on soil testing and two irrigation (IR1, the traditional one; IR2, irrigation based on real-time soil water content monitoring management practices were designed in the experiments. Water and nitrate amounts leaving the soil layer at a depth of 2.0 m below the soil surface were calculated and compared. Results showed that the IR2 effectively reduced water leakage and nitrate leaching amounts in the two-year period, especially in the winter wheat season. Less than 10 percent irrigation water could be saved in a dry winter wheat season, but about 60 percent could be saved in a wet winter wheat season. Besides, 58.8 percent nitrate under single NF2IR1 and 85.2 percent under NF2IR2 could be prevented from leaching. The IR2 should be considered as the best management practice to save groundwater resources and prevent nitrate from leaching. The amounts of N input play a great role in affecting nitrate concentrations in the soil solutions in the winter wheat–summer maize rotation system. The NF2 significantly reduced N inputs and should be encouraged in ordinary agricultural production. Thus, nitrate leaching and groundwater contamination could be alleviated, but timely N supplement might be needed under high precipitation condition.

  4. Assessing Agulhas leakage

    NARCIS (Netherlands)

    van Sebille, E.

    2009-01-01

    Agulhas leakage, the water that flows from the Indian Ocean to the Atlantic Ocean, plays an important role in the circulation of the Atlantic Ocean. The magnitude of this flux of warm and saline Indian Ocean water into the much colder and fresher Atlantic Ocean can be related to the strength of the

  5. Resistance switching memory operation using the bistability in current-voltage characteristics of GaN/AlN resonant tunneling diodes

    Science.gov (United States)

    Nagase, Masanori; Takahashi, Tokio; Shimizu, Mitsuaki

    2016-10-01

    Resistance switching memory operations using the bistability in the current-voltage (I-V) characteristics of GaN/AlN resonant tunneling diodes (RTDs) were investigated to realize an ultrafast nonvolatile memory operating at a picosecond time scale. Resistance switching memory operations based on electron accumulation due to intersubband transitions and electron release due to tunneling current were demonstrated with high reproducibility at room temperature when the leakage of electrons accumulating in the quantum well from the deep level in the AlN barrier was suppressed. A nonvolatile memory for the processor core in a normally off computing system is expected to be realized using the bistability in the I-V characteristics of GaN/AlN RTDs.

  6. Analysis of the Noise Characteristics of CMOS Current Conveyors

    DEFF Research Database (Denmark)

    Bruun, Erik

    1997-01-01

    The definition of the current conveyor is reviewed and a multiple-output second generation current conveyor (CCII) is shown to combine the different generations of current conveyors presently existing. Next, noise sources are introduced, and a general noise model for the current conveyor...... is described. This model is used for the analysis of selected examples of current conveyor based operational amplifier configurations and the noise performance of these configurations is compared. Finally, the noise model is developed for a CMOS current conveyor implementation, and approaches...... to an optimization of the noise performance are discussed. It is concluded that a class AB implementation can yield a lower noise output for the same dynamic range than a class A implementation. For both the class A implementation and the class AB implementation it is essential to design low noise current mirrors...

  7. Current Travertines Precipitation from CO{sub 2}-rich Groundwaters as an alert of CO{sub 2} Leakages from a Natural CO{sub 2} Storage at Ganuelas-Mazarron Tertiary Basin (Murcia, Spain)

    Energy Technology Data Exchange (ETDEWEB)

    Rodrigo-Naharro, J.; Delgado, A.; Herrero, M. J.; Granados, A.; Perez del Villar, L.

    2013-02-01

    Carbon capture and storage technologies (CCS) represent the most suitable solutions related to the high anthropogenic CO{sub 2} emissions to the atmosphere. As a consequence, monitoring of the possible CO{sub 2} leakages from an artificial deep geological CO{sub 2} storage (DGS) is indispensable to guarantee its safety. Fast surficial travertine precipitation related to these CO{sub 2} leakages can be used as an alert for these escapes. Since few studies exist focusing on the long-term behaviour of an artificial CO{sub 2} DGS, natural CO{sub 2} storage affected by natural or artificial escapes must be studied as natural analogues for predicting the long-term behaviour of an artificial CO{sub 2} storage. In this context, a natural CO{sub 2} reservoir affected by artificial CO{sub 2} escapes has been studied in this work. This study has mainly focused on the current travertines precipitation associated with the upwelling CO{sub 2}-rich waters from several hydrogeological wells drilled in the Ganuelas-Mazarron Tertiary basin (SE Spain), and consists of a comprehensive characterisation of parent-waters and their associated carbonates, including elemental and isotopic geochemistry, mineralogy and petrography. Geochemical characterisation of groundwaters has led to recognise 4 hydrofacies from 3 different aquifers. These groundwaters have very high salinity and electrical conductivity; are slightly acid; present high dissolved inorganic carbon (DIC) and free CO{sub 2}; are oversaturated in both aragonite and calcite; and dissolve, mobilize and transport low quantities of heavy and/or toxic elements. Isotopic values indicate that: i) the origin of parent-waters is related to rainfalls from clouds originated in the Mediterranean Sea or continental areas; ii) the origin of C is mainly inorganic; and iii) sulphate anions come mainly from the dissolution of the Messinian gypsum from the Tertiary Basin sediments. Current travertines precipitation seems to be controlled by a

  8. Uncertainty of Voltage Measurement Results of Leakage Current Tester%泄漏电流测试仪试验电压测量结果的不确定度评估

    Institute of Scientific and Technical Information of China (English)

    王霞

    2012-01-01

    介绍了泄漏电流测试仪试验电压测量结果的不确定度评估,详细分析了影响测量不确定度的原因,计算了各不确定度分量并给出合成标准不确定度。为校准结果的准确性提供了可靠保证。%The uncertainty of voltage measurement results of leakage current tester is roduced in this paper. The paper analyzes the reasons that affects the uncertainty of measurement, calculates the every kind of uncertainty components and gives the combined standard uncertainty. This work assures the accuracy of calibration result.

  9. Characteristic time for halo current growth and rotation

    Energy Technology Data Exchange (ETDEWEB)

    Boozer, Allen H., E-mail: ahb17@columbia.edu [Department of Applied Physics and Applied Mathematics, Columbia University, New York, New York 10027 (United States)

    2015-10-15

    A halo current flows for part of its path through the plasma edge and for part through the chamber walls and during tokamak disruptions can be as large as tenths of the plasma current. The primary interest in halo currents is the large force that they can exert on machine components particularly if the toriodal rotation of the halo current resonates with a natural oscillation frequency of the tokamak device. Halo currents arise when required to slow down the growth of a kink that is too unstable to be stabilized by the chamber walls. The width of the current channel in the halo plasma is comparable to the amplitude of the kink, and the halo current grows linearly, not exponentially, in time. The current density in the halo is comparable to that of the main plasma body. The rocket force due to plasma flowing out of the halo and recombining on the chamber walls can cause the non-axisymmetric magnetic structure produced by the kink to rotate toroidally at a speed comparable to the halo speed of sound. Gerhardt's observations of the halo current in NSTX shot 141 687 [Nucl. Fusion 53, 023005 (2013)] illustrate many features of the theory of halo currents and are discussed as a summary of the theory.

  10. Colorectal Anastomotic Leakage: New perspectives

    NARCIS (Netherlands)

    F. Daams (Freek)

    2014-01-01

    markdownabstract__Abstract__ This thesis provides new perspectives on colorectal anastomotic leakages. In both experimental and clinical studies, aspects of prevention, early identification, treatment and consequences of anastomotic leakage are discussed.

  11. Influence of Slot Defect Length on Magnetic Flux Leakage

    Institute of Scientific and Technical Information of China (English)

    Songling HUANG; Luming LI; Haiqing YANG; Keren SHI

    2004-01-01

    A key issue, which influences the applications of magnetic flux leakage testing, is defect quantification. There have been many research on the relationship between width, depth and magnetic flux leakage of slot defect. However, the length factor is often ignored. The relationship between characteristics of defect leakage field and defect length was investigated. The magnetic flux leakages of a series of plate specimens with the same width, same depth and different length slot defects were tested under the same magnetizing conditions. Testing results show that defect length is an important parameter needed to consider in quantifying defects.

  12. Theoretical modeling of sliding vane compressor with leakage

    Energy Technology Data Exchange (ETDEWEB)

    Al-Hawaj, Osama [Department of Mechanical Engineering, University of Kuwait, P.O. Box 5969, Safat 13060 (Kuwait)

    2009-11-15

    Performance of a sliding vane compressor is significantly influenced by the leakage effect occurring between adjacent cells during the compression phase of the cycle. In this paper, thermodynamic and dynamical mathematical models were formulated for a double action sliding vane compressor including leakage effect modeling. The leakage modeling is incorporated through an analytic pressure model with a single tunable parameter to be adjusted to correspond with specific compressor leakage characteristics. The effect of leakage on the cell pressure, temperature, mass, and work, and total vane torque variations were qualitatively investigated. The study illustrated the significant effect of leakage on power input requirement, discharge pressure and mass delivery, and less significant effect on mechanical efficiency and specific mass delivery. The validity of the simulation results is made by comparing the pressure work calculated from both the thermodynamic and the dynamic models. (author)

  13. Research on Capacitive Current Automatic Compensation on Low Voltage Power Grid Leakage Protection of Coal Mine%煤矿低压电网漏电容性电流自动补偿研究

    Institute of Scientific and Technical Information of China (English)

    徐国萍

    2014-01-01

    In neutral insulation low voltage power supply lines of coal mine,due to distributed capacitance exists, the leakage currents or personal electric shock currents exceed the limited safety value, and the changes of distributed capacitance easily cause the original system overcompensation or under compensation. The automatic compensation scheme of combining inductance the coarse adjustment with the fine adjustment is proposed on base of the minimum leakage currents closed loop control theory. Using single chip microcomputer control relay automatic switching magnetic amplifier is to achieve multi tap AC winding inductance step adjustment. The currents of magnetic amplifier DC winding are changed by single chip microcomputer control step motor to adjust potentiometer. The system attains stepless regulation of the inductance, so that the currents of distributed capacitance are completely compensated by the inductor currents of the magnetic amplifier. It has many advantages of fast compensation speed, high precision, short cycle, safety and easy operation during compensation process.%针对煤矿井下中性点绝缘低压供电线路中,由于电网对地分布电容的存在,使漏电电流或人身触电电流超过极限安全值,并且电网分布电容的多变容易引起原系统过补偿或欠补偿的情况,提出基于最小漏电电流闭环控制理论的电感量粗调和细调相融合的自动补偿方案,采用单片机控制继电器自动切换磁放大器多抽头交流绕组实现电感量有级调节,通过步进电机调节电位器改变磁放大器直流绕组的电流,实现电感量无级调节,从而使流过磁放大器的电感电流完全补偿电网分布电容的电流。该系统补偿速度快、精度高、调整周期短,补偿过程操作方便、安全。

  14. REVIEW OF THE LEAKAGE FLOW AND ROTORDYNAMIC CHARACTERISTICS OF POCKET DAMPER SEALS%袋型阻尼密封泄漏流动和转子动力特性的研究进展

    Institute of Scientific and Technical Information of China (English)

    李军; 李志刚

    2011-01-01

    Since pocket damper seals can efficiently weaken the circumferential velocity of the leakage flow, they endow rotors with excellent dynamic characteristics, as illustrated here. The research and development of pocket damper seals is presented at first. Investigations on the leakage flow and rotordynamic characteristics of pocket damper seals using theoretical analysis, experimental measurements and numerical predictions are detailed summarized. Two kinds of experimental methods, i.e. system impedance method and cavity dynamic pressure response method, for the measurement of rotordynamic characteristics of pocket damper seals are elucidated as well as their applications. Finally, the research and development of pocket damper seals for advanced turbomachinery design are briefly outlined.%袋型阻尼密封可以有效地减弱密封间隙内泄漏流体的周向流动, 从而使转子具有优良的动力特性. 本文简介了袋型阻尼密封的发展历程, 详细综述了袋型阻尼密封的泄漏和转子动力特性的理论分析、实验测量和数值预测的研究进展. 介绍了袋型阻尼密封转子动力特性的系统阻抗法和腔室动态压力响应法两种实验测试技术及其应用. 最后在袋型阻尼密封研究综述的基础上, 展望了袋型阻尼密封的研究重点和发展方向.

  15. Current Research on the Relative Effectiveness of Selected Media Characteristics.

    Science.gov (United States)

    Gulliford, Nancy L.

    The literature of research and theory on media, the psychology of learning, and the technology of instruction is reviewed. The focus is on discovering what is currently known about the intersection of these fields. Current thoughts and discoveries about brain structure and processing are discussed. The management of learning as a system is another…

  16. Vacuum Dielectric Recovery Characteristics of a Novel Current Limiting Circuit Breaker Base on Artificial Current Zero

    Institute of Scientific and Technical Information of China (English)

    JIANG Zhuangxian; ZHUANG Jinwu; WANG Chen; WU Jin; LIU Luhui

    2012-01-01

    A novel current limiting circuit breaker employs zero current switching method in cutting off DC current, which gives out a reverse impulsive current towards a high speed vacuum interrupter and force the current down to zero. This kind of breaker is simply in structure and can act in a very short time with high current limiting capability, and therefore it has a long electric life and is extremely suitable to be installed in a DC electrical system as a fault orotection utility.

  17. Effect of defects due to lattice mismatch between GaAs and InP materials on gate-leakage current and microwave noise of GaAs MESFETS on InP substrates

    Science.gov (United States)

    Chertouk, Mourad; Boudiaf, A.; Azoulay, Rozette; Clei, A.

    1993-11-01

    The effect of traps due to lattice mismatch between GaAs and InP materials on the reverse current of Schottky diodes is demonstrated by the temperature dependence of the current, which exhibits a S.R.H. component at low reverse bias (also present in GaAs/GaAs with activation energy 0.125 eV) and a trap assisted tunneling one at high reverse bias (not observed in GaAs/GaAs). A model is developed which takes into account the temperature and channel doping level dependence. Application of this model to 0.25 micrometers gate GaAs MESFETs gives a good agreement with gate leakage current behavior as a function of drain and gate bias, for 6 X 1017 cm-3 and 1018 cm-3 channel doping. The excess gate-drain assisted tunneling current in 1018 cm-3 doped channel does not affect the MESFETs dc and microwave performances. However, the microwave noise (Fmin) is increased.

  18. Zigbee Technology in Intelligent Electric Leakage Protection System Applied Research

    Directory of Open Access Journals (Sweden)

    Deng Lei-lei

    2013-08-01

    Full Text Available Aiming at inconvenient wiring and low flexibility of current wired sensor network,An implementation method for real-time monitoring system based on ZigBee wireless network is proposed in this paper. in view of existing selective earth leakage protection device of low sensitivity, poor reliability problems, proposed one kind based on the zero sequence current feature selectionSelective leakage protection and line selection method; analysis of power supply system leakage fault branch of zero-sequence current logical relations, introduced based on the zero sequence current featuresVolume selective leakage protection principle and the realization method of fault line selection.As a Zigbee wireless sensor technology, Its application to the grid. Analyze leakage protection system in relation to the past system of superior performance and favorable conditions, And its features and system design of a simple program to explain the analysis and application of specific measures.  

  19. Numerical Simulation on Leakage Flow Characteristics and Optimization on Structure of Low Hysteresis Brush Seal%低滞后刷式密封泄漏流动数值模拟及结构优化

    Institute of Scientific and Technical Information of China (English)

    张艾萍; 张帅; 李相通; 张南南

    2015-01-01

    基于多孔介质模型,采用计算流体力学软件 Fluent 对常规、低滞后矩形及翼型3种刷式密封泄漏流动特性进行数值模拟,结果表明:相比于常规刷式密封,矩形刷式密封迟滞性并没有得到改善,翼型刷式密封在降低迟滞性的同时泄漏量却大大增加。为改进低滞后刷式密封的性能,提出背板轴向间隙的概念,并研究背板轴向间隙对低滞后刷式密封泄漏流动特性的影响,结果表明:在前后压比一定的条件下,泄漏量与轴向间隙成正比,而泄漏增加量与轴向间隙成反比,且均在轴向间隙较小时变化较明显;相较于矩形刷式密封,轴向间隙密封随着轴向间隙的增大,背板处压力值除在保护高度区域内略有提高外,在其他区域均明显下降,且轴向间隙由0增大到0.1 mm 时的压力下降效果最明显。%Based on the porous media model,numerical simulation was performed to research the leakage flow charac-teristics of brush seal with three different kinds of groove,including conventional brush seal,rectangular brush seal and airfoil brush seal.Results indicate that,compared to conventional brush seal,the rectangular brush seal’s hysteresis is not been improved.The airfoil brush seal’s hysteresis is reduced greatly,but its leakage is increased a lot at the same time. In order to improve the performance of low hysteresis brush seal,the concept of backplane axial clearance was put for-ward,and the influence of backplane axial clearance on the leakage flow characteristics of low hysteresis brush seal was re-searched.The results indicate that,under the certain compression ratio,the leakage flow rate is proportional to the axial clearances,while the leakage increasement is inversely proportional to the axial clearances,and both of the changes can be found more obviously when the axial clearance is small.Compared with rectangular brush seal,the axial clearance seal

  20. The Origin and Characteristics of the Algerian Current

    Science.gov (United States)

    1990-02-15

    originates in the Almeria -Oran Front and remains withir 30 km of the Algerian coast for over 300 km, between Oran and Algiers. The differences between...Stennis Space Center, Mississippi Satellite and ship data collected between May I-and 22, 1986, show that the Algerian Current originates in the Almeria ...resulting patterns to be used as tracers of the circulation. During this field period, the Algerian Current begins as an extension of the Almeria -Oran Front

  1. Method for generating linear current-field characteristics and eliminating charging delay in no-insulation superconducting magnets

    Science.gov (United States)

    Kim, Seokho; Hahn, Seungyong; Kim, Kwangmin; Larbalestier, David

    2017-03-01

    No-insulation (NI) rare-earth barium copper oxide (REBCO) magnets are promising for high field or high temperature superconducting magnets because they simplify quench protection. However, the turn-to-turn leakage current path induced by the absence of insulation introduces nonlinearities into the magnetic fieldcurrent characteristic and significant delay in reaching the desired field. This paper shows that active feedback control can mitigate both the nonlinearity and the charging delay. To verify our approach, simulations and tests were performed with an NI REBCO magnet made of 13 double-pancake coils. A proportional and integral (PI) feedback control of the power supply was adopted which allowed determination of the appropriate PI gains using dynamic simulations of the equivalent circuit of the NI magnet. Feedback control tests were then performed in liquid nitrogen at 77 K. The time to reach 99.5% of the target magnetic field to become essentially steady-state was reduced by more than 2000 times from 850 s without control to 0.4 s with control. The results demonstrate a potential that one of the most significant perceived disadvantages of an NI magnet can essentially be removed by active feedback control of the power supply current.

  2. Radiation induced inter-device leakage degradation

    Institute of Scientific and Technical Information of China (English)

    胡志远; 刘张李; 邵华; 张正选; 宁冰旭; 陈明; 毕大炜; 邹世昌

    2011-01-01

    The evolution of inter-device leakage generation technologies is studied with an N-type current with total ionizing dose in transistors in 180 nm poly-gate field device (PFD) that uses the shallow trench isolation as an effective gate oxide. The overall r

  3. Pulse current gas metal arc welding characteristics, control and applications

    CERN Document Server

    Ghosh, Prakriti Kumar

    2017-01-01

    This monograph is a first-of-its-kind compilation on high deposition pulse current GMAW process. The nine chapters of this monograph may serve as a comprehensive knowledge tool to use advanced welding engineering in prospective applications. The contents of this book will prove useful to the shop floor welding engineer in handling this otherwise critical welding process with confidence. It will also serve to inspire researchers to think critically on more versatile applications of the unique nature of pulse current in GMAW process to develop cutting edge welding technology.

  4. Investigation of Turbulent Tip Leakage Vortex in an Axial Water Jet Pump with Large Eddy Simulation

    Science.gov (United States)

    Hah, Chunill; Katz, Joseph

    2012-01-01

    Detailed steady and unsteady numerical studies were performed to investigate tip clearance flow in an axial water jet pump. The primary objective is to understand physics of unsteady tip clearance flow, unsteady tip leakage vortex, and cavitation inception in an axial water jet pump. Steady pressure field and resulting steady tip leakage vortex from a steady flow analysis do not seem to explain measured cavitation inception correctly. The measured flow field near the tip is unsteady and measured cavitation inception is highly transient. Flow visualization with cavitation bubbles shows that the leakage vortex is oscillating significantly and many intermittent vortex ropes are present between the suction side of the blade and the tip leakage core vortex. Although the flow field is highly transient, the overall flow structure is stable and a characteristic frequency seems to exist. To capture relevant flow physics as much as possible, a Reynolds-averaged Navier-Stokes (RANS) calculation and a Large Eddy Simulation (LES) were applied for the current investigation. The present study reveals that several vortices from the tip leakage vortex system cross the tip gap of the adjacent blade periodically. Sudden changes in local pressure field inside tip gap due to these vortices create vortex ropes. The instantaneous pressure filed inside the tip gap is drastically different from that of the steady flow simulation. Unsteady flow simulation which can calculate unsteady vortex motion is necessary to calculate cavitation inception accurately even at design flow condition in such a water jet pump.

  5. Survey on Techniques for Detecting Data Leakage

    Directory of Open Access Journals (Sweden)

    Bhosale Pranjali A

    2016-06-01

    Full Text Available In current business scenario, critical data is to be shared and transferred by organizations to many stake holders in order to complete particular task. The critical data include intellectual copyright, patient information etc. The activities like sharing and transferring of such critical data includes threats like leakage of information, misuse of data, illegal access to data and/or alteration of data. It is necessary to deal with such problem efficiently and effectively, popular solutions to this problem are use of firewalls, data loss prevention tools and watermarking. But sometimes culprit succeeds in overcoming such security measures hence, if organizations becomes able to find out the guilty client responsible for leakage of particular data then risk of data leakage is reduced. For this many systems are proposed, this paper includes information about techniques discussed in some of such methodologies.

  6. Propagating characteristics of acoustic leakage signal in natural gas pipeline and establishment of prediction model%输气管道泄漏音波信号传播特性及预测模型

    Institute of Scientific and Technical Information of China (English)

    孟令雅; 付俊涛; 李玉星; 刘翠伟; 刘光晓

    2013-01-01

    The acoustic signals collected from natural gas pipeline leak detection inevitably attenuate as they propagate in the pipeline, and the propagation distance of acoustic signals must be calculated before installing acoustic sensors. With regard to the viscous absorption, heat conduction of medium and the absorption of the special pipe fittings ( elbows, branch and adjustable tube) , the propagation model of acoustic signals was established. The characteristics of acoustic leakage signals in time-frequency domain were analyzed by the improved waveform analysis method. The effects of different special fittings on sound wave propagation were simulated, and the acoustic propagation model was verified by a high pressure leakage test device. The results show that the acoustic leakage signals in the gas pipeline propagates in the form of plane wave, and the energy of acoustic leakage signals is concentrated in the 0-0. 366 Hz and 2.93-46. 88 Hz. The straight pipe and elbows have little effect on the propagation of acoustic signals, while branches and adjustable tube have great impact on the propagation. The a-coustic absorption coefficient fitted by experimental data agrees well with that calculated by the propagation model, which proves the accuracy of the propagation model. The accuracy of the acoustic leakage detection is improved.%输气管道泄漏音波在管内传播过程中发生衰减,在安装音波传感器前必须明确管内音波信号的传播距离.综合考虑介质黏滞吸收和热传导作用及特殊管件(弯管、分支及变径管)的吸收作用,建立泄漏音波在管内传播模型.利用改进的小波分析法对泄漏音波信号时频域特征进行分析,模拟分析不同特殊管件对音波传播的影响,并利用高压泄漏试验装置对建立的传播模型进行验证.结果表明:泄漏音波在管内以平面波形式传播,泄漏信号幅值能量占优的频带主要集中在0 ~0.366 Hz及2.93 ~46.88 Hz内,直管和弯

  7. 无漏电流高效可靠三电平双Buck并网逆变器%High-efficiency High-reliability Dual Buck Three-level Grid-connected Inverters Without Leakage Currents

    Institute of Scientific and Technical Information of China (English)

    洪峰; 刘周成; 万运强; 尹培培; 赵鑫; 王成华

    2014-01-01

    漏电流降低了非隔离型并网逆变装置的安全性和可靠性。已有研究通过将双极性调制全桥逆变器或半桥逆变器三电平化解决该问题。提出基于三电平双Buck逆变器的新思路,并重点研究其中的三电平双Buck全桥电路。该拓扑是将双Buck半桥逆变器中的输入均压电容用一个工频开关的桥臂取代得到,使得对地寄生电容电压在半周期内保持不变,有效地抑制漏电流至几乎可以忽略的程度。同时,该拓扑保持了双Buck电路无桥臂直通、体二极管不工作等特点,又降低了器件电压应力,使得桥臂输出变为单极性调制波。通过与各种无漏电流结构的综合比较可知,该拓扑除在器件总量上比H5结构多一个功率管外,在有源器件数量、通态电流经过器件数量、高频开关器件数量、是否需要均压控制等方面,均有一定优势,有助于降低系统复杂度,提高可靠性与变换效率。仿真与实验验证了上述分析。%Leakage currents reduce the reliability and the security of non-isolated grid-connected inverters. Three-level topologies based on the dual-polarity modified full bridge inverter or the half bridge inverter were the existing methods to resolve this problem. The use of three-level topologies based on the dual buck inverter is a new way proposed by this paper. As the input divider capacitors of the dual buck half bridge inverter have been replaced by one working period switching bridge, a so-called three-level dual buck full bridge inverter is obtained. Because the voltage of stray capacitor remains unchanged in each half period, there is no leakage current. And there is no shoot-through problem, and none of the body-diodes in this topology needs to work. At the same time, the stresses of devices were reduced, and the outputs of bridge-legs become uni-polarity. The new topology was compared with no leakage current existed topologies. The total

  8. Nanoose Range Current Characteristics at 274m Depth

    Science.gov (United States)

    1977-05-01

    data point is the resultant vector summation of the actual current sampled every 1/8 turn of the Savonius rotor speed sensor over a 112.5-second...E. Woodward and Gerald F. Appel, July 1973 5. NOAA-TM-NOS-NOIC-3, Effects of Vertical Motion on Vector Averaging ( Savonius Rotor) and Electromagnetic...IAVTORPSTh tracking ranges. The measurement apparatus entails’a Hydro Products Savonius rotor and directional vane follower. These sensors are Lpart of the

  9. Mobile applications for obesity and weight management: current market characteristics.

    Science.gov (United States)

    Nikolaou, C K; Lean, M E J

    2017-01-01

    Mobile-Health (mHealth) is the fastest-developing eHealth sector, with over 100 000 health applications (apps) currently available. Overweight/obesity is a problem of wide public concern that is potentially treatable/preventable through mHealth. This study describes the current weight-management app-market. Five app stores (Apple, Google, Amazon, Windows and Blackberry) in UK, US, Russia, Japan and Germany, Italy, France, China, Australia and Canada were searched for keywords: 'weight', 'calorie', 'weight-loss', 'slimming', 'diet', 'dietitian' and 'overweight' in January/February 2016 using App-Annie software. The 10 most downloaded apps in the lifetime of an app were recorded. Developers' lists and the app descriptions were searched to identify any professional input with keywords 'professional', 'dietitian' and 'nutritionist'. A total of 28 905 relevant apps were identified as follows: Apple iTunes=8559 (4634, 54% paid), Google Play=1762 (597, 33.9% paid), Amazon App=13569 (4821, 35.5% paid), Windows=2419 (819, 17% paid) and Blackberry=2596 (940, 36% paid). The 28 905 identified apps focused mainly on physical activity (34%), diet (31%), and recording/monitoring of exercise, calorie intake and body weight (23%). Only 17 apps (0.05%) were developed with identifiable professional input. Apps on weight management are widely available and very popular but currently lack professional content expertise. Encouraging app development based on evidence-based online approaches would assure content quality, allowing healthcare professionals to recommend their use.

  10. Leakage resilient password systems

    CERN Document Server

    Li, Yingjiu; Deng, Robert H

    2015-01-01

    This book investigates tradeoff between security and usability in designing leakage resilient password systems (LRP) and introduces two practical LRP systems named Cover Pad and ShadowKey. It demonstrates that existing LRP systems are subject to both brute force attacks and statistical attacks and that these attacks cannot be effectively mitigated without sacrificing the usability of LRP systems. Quantitative analysis proves that a secure LRP system in practical settings imposes a considerable amount of cognitive workload unless certain secure channels are involved. The book introduces a secur

  11. Characteristics of output voltage and current of integrated nanogenerators

    KAUST Repository

    Yang, Rusen

    2009-01-01

    Owing to the anisotropic property and small output signals of the piezoelectric nanogenerators (NGs) and the influence of the measurement system and environment, identification of the true signal generated by the NG is critical. We have developed three criteria: Schottky behavior test, switching-polarity tests, and linear superposition of current and voltage tests. The 11 tests can effectively rule out the system artifacts, whose sign does not change with the switching measurement polarity, and random signals, which might change signs but cannot consistently add up or cancel out under designed connection configurations. This study establishes the standards for designing and scale up of integrated nanogenerators. © 2009 American Institute of Physics.

  12. Improved Turn-on Characteristics of Fast High Current Thyristors

    CERN Document Server

    Ducimetière, L; Vossenberg, Eugène B

    1999-01-01

    The beam dumping system of CERN's Large Hadron Collider (LHC) is equipped with fast solid state closing switches, designed for a hold-off voltage of 30 kV and a quasi half sine wave current of 20 kA, with 3 ms rise time, a maximum di/dt of 12 kA/ms and 2 ms fall time. The design repetition rate is 20 s. The switch is composed of ten Fast High Current Thyristors (FHCT’s), which are modified symmetric 4.5 kV GTO thyristors of WESTCODE. Recent studies aiming at improving the turn-on delay, switching speed and at decreasing the switch losses, have led to test an asymmetric not fully optimised GTO thyristor of WESTCODE and an optimised device of GEC PLESSEY Semiconductor (GPS), GB. The GPS FHCT, which gave the best results, is a non irradiated device of 64 mm diameter with a hold-off voltage of 4.5 kV like the symmetric FHCT. Tests results of the GPS FHCT show a reduction in turn-on delay of 40 % and in switching losses of almost 50 % with respect to the symmetric FHCT of WESTCODE. The GPS device can sustain an i...

  13. SOCIAL CHARACTERISTIC OF A CURRENT STATE OF THE VILLAGE

    Directory of Open Access Journals (Sweden)

    Laura Bokenchina

    2015-12-01

    Full Text Available The author researchers the social sphere consisting of the branches’ set creating various products in the form of non-material and material services which finally provide inquiries of the society in Kazakhstan that comes to be very important and authentic for the current matter of fact for this country. Transformations associated with the transition to the market economy caused a sharp decline in the rural population of life quality. In the context of transformational recession social services in the rural areas for a long time operated on prevailing conditions in the planned economy assets, resulting in the quality of its services significantly decreased.At the same time, the social sphere of urban economy is largely felt the benefits of the economic growth and participation in the reconstruction of this sector and took the largest system of corporation, especially in the status of city-companies within the social responsibility of business and regional agreements of social partnership.

  14. Current Workforce Characteristics and Burnout in Pediatric Emergency Medicine.

    Science.gov (United States)

    Gorelick, Marc H; Schremmer, Robert; Ruch-Ross, Holly; Radabaugh, Carrie; Selbst, Steven

    2016-01-01

    Changes in health care delivery and graduate medical education have important consequences for the workforce in pediatric emergency medicine (PEM). This study compared career preparation and potential attrition of the PEM workforce with the prior assessment from 1998. An e-mail survey was sent to members of the American Academy of Pediatrics (AAP) Section on EM and to non-AAP members board certified in PEM. Information on demographics, practice characteristics and professional activities, career preparation, future plans, and burnout (using two validated screening questions) was analyzed using standard descriptive statistics. Of 2,120 surveys mailed, 895 responses were received (40.8% response). Over half (53.7%) of respondents were female, compared with 44% in 1998. The majority (62.9%) practiced in the emergency department (ED) of a free-standing children's hospital. The distribution of professional activities was similar to that reported in 1998, with the majority of time (60%) spent in direct patient care. Half indicated involvement in research, and almost half had dedicated time for other activities, including emergency medical services (7.3%), disaster (6.9%), child abuse (5.0%), transport (3.6%), toxicology (2.3% of respondents), and other (13.6%); additionally, 21.3% had dedicated time for quality/safety. Respondents were highly satisfied (95.6%) with fellowship preparation for clinical care, but less satisfied with preparation for research (49.2%) and administration (38.7%). However, satisfaction with nonclinical training was higher for those within 10 years of medical school graduation. Forty-six percent plan to change clinical activity in the next 5 years, including reducing hours, changing shifts, or retiring. Overall, 11.9% of all respondents, including 20.1% of women and 2.6% of men (p preparation for professional activities in PEM is improving, gaps remain in training in nonclinical skills. Symptoms of burnout are prevalent, and there is likely to

  15. 基于STC90C58的单相交流供电线路漏电流监测装置%STC90C58-based Device to Monitor Leakage Current of Single-phase AC Power Line

    Institute of Scientific and Technical Information of China (English)

    关旭俊; 谢力扬

    2014-01-01

    基于STC90C58设计了一种监测单相交流供电线路漏电流的装置。采用了微控制器和电能计量器件,可同时采集并显示单相交流供电线路相线电流、中性线电流和相线对地漏电流的幅值。可为判断漏电性质和排查漏电点提供数据支持,对提高漏电保安器的投入率、提高用电安全性、降低线损有一定的积极意义。%A device based on STC90C58 to monitor the leakage current of single-phase AC power line is designed .The device uses a micro-controller and a power energy IC ,it can simultaneously capture and display the amplitudes of the phase line current ,the neutral current and the phase-to-ground leakage current of the single-phase AC supply line .The device can determine the nature of leakage points and provide data to support the investigation ,it will have some positive significance to improve the input rate of leakage protectors and improve the security for using electricity and reduce line losses .

  16. Structure of the breakpoint region on current-voltage characteristics of intrinsic Josephson junctions

    Science.gov (United States)

    Shukrinov, Yu. M.; Mahfouzi, F.; Suzuki, M.

    2008-10-01

    A fine structure of the breakpoint region in the current-voltage characteristics of the coupled intrinsic Josephson junctions in the layered superconductors is found. We establish a correspondence between the features in the current-voltage characteristics and the character of the charge oscillations in superconducting layers in the stack and explain the origin of the breakpoint region structure.

  17. Power series fitting of current-voltage characteristics of Al doped ZnO thin film-Sb doped (Ba{sub 0.8}Sr{sub 0.2})TiO{sub 3} heterojunction diode

    Energy Technology Data Exchange (ETDEWEB)

    Sirikulrat, N., E-mail: scphi003@chiangmai.ac.th

    2012-02-29

    The current-voltage (I-V) relationship of aluminum doped zinc oxide thin film-antimony doped barium strontium titanate single heterojunction diodes was investigated. The linear I-V characteristics are similar to those of the PN junction diodes. The linear conduction at a low forward bias voltage as predicted by the space charge limited current theory and the trap free square law at a higher forward voltage are observed. The overall current density-voltage (J-V) characteristics of the diodes are found to be well described by the Power Series Equation J= N-Ary-Summation {sub m}C{sub m}V{sup m} where C{sub m} is the leakage constant at particular power m with the best fit for the power m found to be at the fourth and fifth orders for the forward and reverse bias respectively. - Highlights: Black-Right-Pointing-Pointer The n-n isotype heterojunction diodes of ceramic oxide semiconductors were prepared. Black-Right-Pointing-Pointer The current density-voltage (J-V) curves were analyzed using the Power Series (PS). Black-Right-Pointing-Pointer The J-V characteristics were found to be well described with PS at low order. Black-Right-Pointing-Pointer The thermionic emission and diode leakage currents were comparatively discussed.

  18. Characteristics of current roadside pollution of soils in Upper Silesia

    Science.gov (United States)

    Wawer, M.; Szuszkiewicz, M.; Magiera, T.

    2012-04-01

    The aim of the study was qualitative recognition of contemporary roadside pollutants deposited on topsoils in areas located in close vicinity to roads with high traffic volume (main roads, ring roads). So far, the determination of pollutant content in soil samples has shown only the amount of pollutants deposited on soils over long time period, without the possibility to assess the quality changes in type of deposition and to determine the present structure of roadside pollution. Moreover, in many cases, it is difficult to distinguish roadside pollution from other industrial sources. In order to avoid this issue and recognize currently emergent threats of road traffic origin, three monitoring plots filled with quartz sand had been installed in Zabrze, Gliwice and Opole (Poland) close to arteries with high traffic volume. For installation of monitoring plots 7 cm of topsoil had been removed and replaced by boxes filled with clean quartz sand with known chemical composition and neutral magnetic properties (diamagnetic). This sand was treated as neutral matrix for the accumulation of traffic pollution. Results of chemical analyses of heavy metal contents and magnetic susceptibility measurements of removed topsoils have shown that the highest content of Fe, Mn, Zn, Pb, Cu, Cr and Ni were observed in Zabrze. Amount of Zn and Pb exceeded threshold values. Magnetic susceptibility values were also the highest in Zabrze. In all investigated areas magnetic susceptibility values and heavy metal contents decreased with the distance from the road. Measurements of sand from monitoring plots which were executed after 3, 6 and 12 months of exposure have shown that values of magnetic susceptibility have increased during these time periods. It is visible especially in surface layer of sand. Initially magnetic susceptibility value of quartz sand which was used as matrix after first year of exposure increased from 0,25 - 10-8 m3kg-1 to 300 in Zabrze, 50 in Gliwice and 30- 10-8 m3kg-1

  19. Nanoscale Ferroelectric Switchable Polarization and Leakage Current Behavior in (Ba0.50Sr0.50(Ti0.80Sn0.20O3 Thin Films Prepared Using Chemical Solution Deposition

    Directory of Open Access Journals (Sweden)

    Venkata Sreenivas Puli

    2015-01-01

    Full Text Available Nanoscale switchable ferroelectric (Ba0.50Sr0.50(Ti0.80Sn0.20O3-BSTS polycrystalline thin films with a perovskite structure were prepared on Pt/TiOx/SiO2/Si substrate by chemical solution deposition. X-ray diffraction (XRD spectra indicate that a cubic perovskite crystalline structure and Raman spectra revealed that a tetragonal perovskite crystalline structure is present in the thin films. Sr2+ and Sn4+ cosubstituted film exhibited the lowest leakage current density. Piezoresponse Force Microscopy (PFM technique has been employed to acquire out-of-plane (OPP piezoresponse images and local piezoelectric hysteresis loop in polycrystalline BSTS films. PFM phase and amplitude images reveal nanoscale ferroelectric switching behavior at room temperature. Square patterns with dark and bright contrasts were written by local poling and reversible nature of the piezoresponse behavior was established. Local piezoelectric butterfly amplitude and phase hysteresis loops display ferroelectric nature at nanoscale level. The significance of this paper is to present ferroelectric/piezoelectric nature in present BSTS films at nanoscale level and corroborating ferroelectric behavior by utilizing Raman spectroscopy. Thus, further optimizing physical and electrical properties, BSTS films might be useful for practical applications which include nonvolatile ferroelectric memories, data-storage media, piezoelectric actuators, and electric energy storage capacitors.

  20. Junction leakage measurements with micro four-point probes

    DEFF Research Database (Denmark)

    Lin, Rong; Petersen, Dirch Hjorth; Wang, Fei;

    2012-01-01

    We present a new, preparation-free method for measuring the leakage current density on ultra-shallow junctions. The junction leakage is found by making a series of four-point sheet resistance measurements on blanket wafers with variable electrode spacings. The leakage current density is calculated...... using a fit of the measured four-point resistances to an analytical two-sheet model. The validity of the approximation involved in the two-sheet model is verified by a comparison to finite element model calculations....

  1. 油品泄漏对循环冷却水系统生物黏泥生长特性的影响%Effects of Oil Leakage in Circulating Cooling Water System on Biofouling Growth Characteristics

    Institute of Scientific and Technical Information of China (English)

    刘芳; 杨飞; 王飞扬; 卢宪辉; 张家权

    2012-01-01

    油品泄漏导致循环冷却水中含有大量石油烃类物质,从而影响石油炼制与化工企业生产装置的正常运行.为研究油品泄漏对循环冷却水系统的影响,以柴油作为单一泄漏油品,考察了柴油添加量及添加方式的变化对循环冷却水系统生物黏泥生长特性的影响.结果表明,低浓度的柴油对生物黏泥化学组成影响较大,柴油添加浓度增加使生物黏泥易于剥落.随着柴油添加量的增加,生物黏泥湿重有上升的趋势,脂磷质量浓度则呈现先上升后降低的趋势.泄漏方式的变化对生物黏泥生长特性影响不明显.%Oil leakage leads to a lot of petroleum hydrocarbons leaking into the circulating cooling water system, which will affect normal operation of production facilities. In order to study the impact of oil leakage on the circulating water system, diesel oil was used as the leaking oil. Effects of the diesel concentrations and addition modes on biofouling growth characteristics in circulating cooling water system were investigated. Results showed that low diesel concentrations had the rather obvious effect on biofouling chemical composition, and the increase of diesel concentration led to biofouling detachment ratio rising. With the increase of diesel concentration biofouling wet mass tended to rise, while phospholipid concentration was with the trend of first increase and then decrease. There was no obvious effect of addition modes on biofouling growth characteristics.

  2. Leakage-free journal bearings

    Science.gov (United States)

    Pinkus, O.; Etsion, I.

    1976-01-01

    A new concept of a journal bearing is developed which prevents side leakage of the lubricant, thus eliminating the need for sealing and collecting this leakage. The cooling of the bearing is accomplished by the prevailing circumferential flow. An analysis is performed and solutions are given for the bearing geometries and inlet pressures required to achieve the above purpose.

  3. The Colombia Current: An Eastern Tropical Pacific Coastal Current, Early Oceanographic Characteristics

    Science.gov (United States)

    Rodriguez-Rubio, E.

    2007-05-01

    Newly gathered hydrographic data from the Colombia Pacific Ocean is combined with remote sensing data to reassess the properties of the costal current named Colombian Current by Wooster (1959). The Colombian Pacific Ocean is located between 84°-76°W and 1°30'-5°N (oceanic zone), 1°30'- 7°N (coastal zone): This area is well-known also like Panama Bight. New hydrographic data were occupied along the Colombian Pacific coast during March of 2006, making 41 stations with measurements of CTD until a maximum depth of 1200 m, depending on the depth of the marine bottom. On the other hand, sea surface temperatures (SST) were obtained from the MODIS-AQUA satellite and sea surface wind speed and wind direction stem from QuickScat, both averaged for March 2006. Hydrographic grid layers necessary to obtain dynamic topography variable were made with objective mapping calculating is not total dynamic height, but the dynamic height between consecutive levels or "thickness". The purpose of this methodology is that in very coastal campaigns it can have a substantial number of stations that do not arrive at the reference level. Finally geostrophic velocity was computed for the Colombian Current area at several layers. The coast was characterized by low salinities due to river runoff in the North zone. The sea surface temperature during the month of March of 2006 was especially low in the oceanic zone, reaching temperatures between 19°C and 24°C.The dynamic topography indicated the presence of a surface coastal current flowing towards the north and a crosscurrent to 400 m of depth never before described. The wind corresponded to the pattern of the wind jet of Panama. During March the ITCZ moves south, drawing the Panama jet across the Isthmus and over the Pacific. Upwelling curl associated with the left (southeast) flank of this jet generates a cyclonic eddy in the Panama Bight and SST cooling in its center. In the Panama Bight, the curl dipole produces a cyclonic circulation

  4. Numerical Analysis on Current Transport Characteristics in Single Layer Organic Electroluminescent Devices

    Institute of Scientific and Technical Information of China (English)

    2002-01-01

    A new model to describe I-V characteristics of organic light-emitting devices (OLEDs) is developed based on experimental results. The dependence of I-V characteristics on energy barrier, trap density and carrier mobility is analyzed. The result shows that this model combines the Fowler-Nordheim tunnel theory and the trap charge limited current theory with exponential trap distribution (TCL), and it describes the current transport characteristics of OLEDs more comprehensively. The I-V characteristics follow Fowler-Nordheim theory when the energy barrier is high, the trap density is small and the carrier mobility is large.In other cases they follow the TCL theory.

  5. 基于多特征波长光谱分析的天然气泄漏遥测系统%Remote System of Natural Gas Leakage Based on Multi-Wavelength Characteristics Spectrum Analysis

    Institute of Scientific and Technical Information of China (English)

    李静; 鲁旭涛; 杨泽辉

    2014-01-01

    system calculated the concentration-path-length product in tested area by multi-wavelength characteristics spectrum analysis algorithm ,furthermore the inversion of the corresponding concentration of methane .By HITRAN spectrum database ,Selected wavelength position of 1.65 μm as the main characteristic absorption peaks ,thereby using 1.65 μm DFB laser as the light source .In order to improve the detection ac-curacy and stability without increasing the hardware configuration of the system ,solved absorbance ratio by the auxiliary wave-length ,and then get concentration-path-length product of measured gas by the method of the calculation proportion of multi-wavelength characteristics .The measurement error from external disturbance is caused by this innovative approach ,and it is more similar to a differential measurement .It will eliminate errors in the process of solving the ratio of multi-wavelength charac-teristics ,and can improve accuracy and stability of the system .The infrared absorption spectrum of methane is constant ,the ra-tio of absorbance of any two wavelengths by methane is also constant .The error coefficients produced by the system is the same when it received the same external interference ,so the measured noise of the system can be effectively reduced by the ratio meth-od .Experimental tested standards methane gas tank with leaking rate constant .Using the tested data of PN1000 type portable methane detector as the standard data ,and were compared to the tested data of the system ,while tested distance of the system were 100 ,200 and 500 m .Experimental results show that the methane concentration detected value was stable after a certain time leakage ,the concentration-path-length product value of the system was stable .For detection distance of 100 m ,the detec-tion error of the concentration-path-length product was less than 1.0% .With increasing distance from tested area ,the detection error is increased correspondingly .When the distance was 500

  6. Duct Leakage Repeatability Testing

    Energy Technology Data Exchange (ETDEWEB)

    Walker, Iain [Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Sherman, Max [Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)

    2014-01-01

    Duct leakage often needs to be measured to demonstrate compliance with requirements or to determine energy or Indoor Air Quality (IAQ) impacts. Testing is often done using standards such as ASTM E1554 (ASTM 2013) or California Title 24 (California Energy Commission 2013 & 2013b), but there are several choices of methods available within the accepted standards. Determining which method to use or not use requires an evaluation of those methods in the context of the particular needs. Three factors that are important considerations are the cost of the measurement, the accuracy of the measurement and the repeatability of the measurement. The purpose of this report is to evaluate the repeatability of the three most significant measurement techniques using data from the literature and recently obtained field data. We will also briefly discuss the first two factors. The main question to be answered by this study is to determine if differences in the repeatability of these tests methods is sufficient to indicate that any of these methods is so poor that it should be excluded from consideration as an allowed procedure in codes and standards.

  7. Multifamily Envelope Leakage Model

    Energy Technology Data Exchange (ETDEWEB)

    Faakye, Omari [Consortium for Advanced Residential Buildings, Norwalk, CT (United States); Griffiths, Dianne [Consortium for Advanced Residential Buildings, Norwalk, CT (United States)

    2015-05-08

    “The cost for blower testing is high, because it is labor intensive, and it may disrupt occupants in multiple units. This high cost and disruption deter program participants, and dissuade them from pursuing energy improvements that would trigger air leakage testing, such as improvements to the building envelope.” This statement found in a 2012 report by Heschong Mahone Group for several California interests emphasizes the importance of reducing the cost and complexity of blower testing in multifamily buildings. Energy efficiency opportunities are being bypassed. The cost of single blower testing is on the order of $300. The cost for guarded blower door testing—the more appropriate test for assessing energy savings opportunities—could easily be six times that, and that’s only if you have the equipment and simultaneous access to multiple apartments. Thus, the proper test is simply not performed. This research seeks to provide an algorithm for predicting the guarded blower door test result based upon a single, total blower door test.

  8. A Study of Current Chopping Characteristics in Metal-Carbide Composite Contact Materials

    Science.gov (United States)

    Yamamoto, Atsushi; Kusano, Takashi; Okutomi, Tsutomu; Yokokura, Kunio; Homma, Mitsutaka

    To clarify the effect of carbides on current chopping characteristics chopping current was evaluated for various metalcarbide contact materials. As a result, it was found that the chopping current of metal-carbide contacts was related to the vapor pressure of metals and the work function of carbides. It was also found that the chopping current was reduced by the heat treatment when the melting point of contacts is lower than the temperature of heat teatment.

  9. Current-voltage characteristic of a resonant tunneling diode under electromagnetic radiation

    National Research Council Canada - National Science Library

    N Hatefi Kargan

    2013-01-01

    In this paper, current-voltage characteristic of a resonant tunneling diode under electromagnetic radiation has been calculated and compared with the results when there is no electromagnetic radiation...

  10. A new approach for modeling of dark current characteristics of quantum wire infrared photodetectors

    Institute of Scientific and Technical Information of China (English)

    H. Barickaby; A. Zarifkar; M. H. Sheikhi

    2011-01-01

    In order to study the dark current characteristics in a quantum wire infrared photodetector (QRIP), the average number of electrons in quantum wires (QRs) must be got, which is mostly too complicated. In this paper we give a simple formula to calculate the average number of carriers in a quantum wire (QR) that can be easily evaluated by mathematical softwares, and then we use this formula to study dark current characteristics ora quantum wire infrared photodetector (QRIP).

  11. Eddy current nondestructive testing device for measuring variable characteristics of a sample utilizing Walsh functions

    Science.gov (United States)

    Libby, Hugo L.; Hildebrand, Bernard P.

    1978-01-01

    An eddy current testing device for measuring variable characteristics of a sample generates a signal which varies with variations in such characteristics. A signal expander samples at least a portion of this generated signal and expands the sampled signal on a selected basis of square waves or Walsh functions to produce a plurality of signal components representative of the sampled signal. A network combines these components to provide a display of at least one of the characteristics of the sample.

  12. Classification of methods for measuring current-voltage characteristics of semiconductor devices

    Directory of Open Access Journals (Sweden)

    Iermolenko Ia. O.

    2014-06-01

    Full Text Available It is shown that computer systems for measuring current-voltage characteristics are very important for semiconductor devices production. The main criteria of efficiency of such systems are defined. It is shown that efficiency of such systems significantly depends on the methods for measuring current-voltage characteristics of semiconductor devices. The aim of this work is to analyze existing methods for measuring current-voltage characteristics of semiconductor devices and to create the classification of these methods in order to specify the most effective solutions in terms of defined criteria. To achieve this aim, the most common classifications of methods for measuring current-voltage characteristics of semiconductor devices and their main disadvantages are considered. Automated and manual, continuous, pulse, mixed, isothermal and isodynamic methods for measuring current-voltage characteristics are analyzed. As a result of the analysis and generalization of existing methods the next classification criteria are defined: the level of automation, the form of measurement signals, the condition of semiconductor device during the measurements, and the use of mathematical processing of the measurement results. With the use of these criteria the classification scheme of methods for measuring current-voltage characteristics of semiconductor devices is composed and the most effective methods are specified.

  13. Climate Policy and Carbon Leakage

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2008-07-01

    This report explores the effects of the EU emissions trading scheme on the aluminium sector (i.e. competitiveness loss and carbon leakage). With its very high electricity intensity, primary aluminium stands out in the heavy industry picture: a sector whose emissions are not capped in the present EU ETS, European aluminium smelters still stand to lose profit margins and, possibly, market shares, as electricity prices increase following CO2 caps on generators' emissions - the famous pass-through of CO2 prices into electricity prices. The analysis includes a method of quantification of this issue, based on two indicators: profit margins and trade flows. As the EU is at the forefront of such policy, the paper provides policy messages to all countries on how trade exposed energy-intensive industries can be 'moved' by carbon constraint. This also is a contentious topic in Australia, Japan, New Zealand, and the US, where ambitious climate policies -- including cap-and-trade systems -- are currently debated.

  14. Current-voltage characteristics of Pb and Sn granular superconducting nanowires

    DEFF Research Database (Denmark)

    Michotte, S.; Mátéfi-Tempfli, Stefan; Piraux, L.

    2003-01-01

    Current-voltage characteristics of Pb and Sn granular superconducting nanowires were investigated. The nanowires were prepared by electrodeposition in nanoporous membranes. It was observed that phase-slip-centers were formed far below the critical temperature when dc current was introduced inside...

  15. Prediction of the gain versus injection-current characteristic of individual semiconductor laser amplifiers

    Energy Technology Data Exchange (ETDEWEB)

    Binder, J.O. (ANT Nachrichtentechnik GmbH, Abt. E331, D-7150 Backnang (DE)); Cormack, G.D. (Alberta Telecommunications Research Centre, Alberta T6E 5Y4 (CA))

    1990-07-01

    The gain versus current characteristic of individual semiconductor laser traveling wave amplifiers is shown to be predictable from data obtained during the anti-reflection coating procedure, namely light versus current curves and the residual reflectivity of the first-coated facet.

  16. Current-voltage characteristic of parallel-plane ionization chamber with inhomogeneous ionization

    Energy Technology Data Exchange (ETDEWEB)

    Stoyanov, D G [Faculty of Engineering and Pedagogy in Sliven, Technical University of Sofia, 59, Bourgasko Shaussee Blvd, 8800 Sliven (Bulgaria)

    2007-08-15

    The balances of particles and charges in the volume of parallel-plane ionization chamber are considered. Differential equations describing the distribution of current densities in the chamber volume are obtained. As a result of the differential equations solution an analytical form of the current-voltage characteristic of parallel-plane ionization chamber with inhomogeneous ionization in the volume is obtained.

  17. Current-voltage characteristic of parallel-plane ionization chamber with inhomogeneous ionization

    CERN Document Server

    Stoyanov, Dimitar G

    2007-01-01

    The balances of particles and charges in the volume of parallel-plane ionization chamber are considered. Differential equations describing the distribution of current densities in the chamber volume are obtained. As a result of the differential equations solution an analytical form of the current-voltage characteristic of parallel-plane ionization chamber with inhomogeneous ionization in the volume is got.

  18. Evaluation of Surface Cracks Using Magnetic Flux Leakage Testing

    Institute of Scientific and Technical Information of China (English)

    2002-01-01

    The magnetic field distribution characteristics of surface cracks with various widths are discussed based on finite element (FEM) results. The crack depth was 0.20 mm, the width range was from 0.02 to 1.00 mm. The results showed that crack width and lift-off (the distance between surface and sensor) will influence signals. Discussed in this paper is the influence of various lift-off parameters on the peak to peak values of the normal component in magnetic flux leakage testing. The effects can be applied to evaluate surface breaking cracks of different widths and depths.An idea is presented to smooth narrow, sharp crack tips using alternating current (AC) field magnetization.

  19. The influence of microwave irradiation power on current voltage characteristics of intrinsic Josephson junctions

    Science.gov (United States)

    Shukrinov, Yu M.; Mans, M.; Scherbel, J.; Seidel, P.

    2007-02-01

    The current-voltage characteristics of a micrometre bridge of intrinsic Josephson junctions under microwave irradiation are studied. The collective switching of the group of four junctions splits up as the AC signal amplitude is gradually increased. The switching current of the remaining group of junctions is increased with increasing radiation power. We consider that microwave irradiation injects an additional quasiparticle current into the Josephson junction array. We use ideas of breakdown of quasineutrality and quasiparticle charge imbalance in the superconducting layers and explain the experimental results by the competition between the 'current effect' and the effect of suppression of the switching current by irradiation.

  20. The influence of microwave irradiation power on current-voltage characteristics of intrinsic Josephson junctions

    Energy Technology Data Exchange (ETDEWEB)

    Shukrinov, Yu M [BLTP, JINR, Dubna, Moscow Region, 141980 (Russian Federation); Mans, M [Institut fur Festkoerperphysik, Friedrich-Schiller-Universitaet Jena, D-07743 Jena (Germany); Scherbel, J [Institut fur Festkoerperphysik, Friedrich-Schiller-Universitaet Jena, D-07743 Jena (Germany); Seidel, P [Institut fur Festkoerperphysik, Friedrich-Schiller-Universitaet Jena, D-07743 Jena (Germany)

    2007-02-15

    The current-voltage characteristics of a micrometre bridge of intrinsic Josephson junctions under microwave irradiation are studied. The collective switching of the group of four junctions splits up as the AC signal amplitude is gradually increased. The switching current of the remaining group of junctions is increased with increasing radiation power. We consider that microwave irradiation injects an additional quasiparticle current into the Josephson junction array. We use ideas of breakdown of quasineutrality and quasiparticle charge imbalance in the superconducting layers and explain the experimental results by the competition between the 'current effect' and the effect of suppression of the switching current by irradiation.

  1. Novel Sleep Transistor Techniques for Low Leakage Power Peripheral Circuits

    Directory of Open Access Journals (Sweden)

    Rajani H.P

    2012-09-01

    Full Text Available Static power consumption is a major concern in nanometre technologies. Along with technology scaling down and higher operating speeds of CMOS VLSI circuits, the leakage power is getting enhanced. As process geometries are becoming smaller, device density increases and threshold voltage as well as oxide thickness decrease to keep pace with performance. Two novel circuit techniques for leakage current reduction in inverters with and without state retention property are presented in this work. The powerdissipation during inactive (standby mode of operation can be significantly reduced compared to traditional power gating methods by these circuit techniques. The proposed circuit techniques are applied to inverters and the results are compared with earlier inverter leakage minimization techniques. Inverter buffer chains are designed using new state retention low leakage technique and found to be dissipatinglower power with state retention. All low leakage inverters are designed and simulated in cadence design environment using 90 nm technology files. The leakage power during sleep mode is found to be better by X 63 times for novel method. The total power dissipation has also reduced by a factor of X 3.5, compared to earlier sleepy keeper technique. The state retention feature is also good compared to earlier leakage power reduction methodologies.

  2. Novel Sleep Transistor Techniques for Low Leakage Power Peripheral Circuits

    Directory of Open Access Journals (Sweden)

    Rajani H.P

    2012-08-01

    Full Text Available Static power consumption is a major concern in nanometre technologies. Along with technology scaling down and higher operating speeds of CMOS VLSI circuits, the leakage power is getting enhanced. As process geometries are becoming smaller, device density increases and threshold voltage as well as oxide thickness decrease to keep pace with performance. Two novel circuit techniques for leakage current reduction in inverters with and without state retention property are presented in this work. The power dissipation during inactive (standby mode of operation can be significantly reduced compared to traditional power gating methods by these circuit techniques. The proposed circuit techniques are applied to inverters and the results are compared with earlier inverter leakage minimization techniques. Inverter buffer chains are designed using new state retention low leakage technique and found to be dissipating lower power with state retention. All low leakage inverters are designed and simulated in cadence design environment using 90 nm technology files. The leakage power during sleep mode is found to be better by X 63 times for novel method. The total power dissipation has also reduced by a factor of X 3.5, compared to earlier sleepy keeper technique. The state retention feature is also good compared to earlier leakage power reduction methodologies.

  3. Sensitivity of the house pressure test for duct leakage to variations in the distribution of air leakage in the house envelope

    Energy Technology Data Exchange (ETDEWEB)

    Andrews, J.W.

    1998-12-01

    The house pressure test for air leakage in ducts calculates the signed difference between the supply and return leakage from the response of the air pressure in the house to operation of the system fan. The currently accepted version of this calculation was based on particular assumptions about how the house envelope leakage is distributed between the walls, ceiling, and floor. This report generalizes the equation to account for an arbitrary distribution of envelope leakage. It concludes that the currently accepted equation is usually accurate to within {+-}5%, but in a small proportion of cases the results may diverge by 50% or more.

  4. Current-voltage characteristic of a resonant tunneling diode under electromagnetic radiation

    Directory of Open Access Journals (Sweden)

    N Hatefi Kargan

    2013-09-01

    Full Text Available  In this paper, current-voltage characteristic of a resonant tunneling diode under electromagnetic radiation has been calculated and compared with the results when there is no electromagnetic radiation. For calculating current -voltage characteristic, it is required to calculate the transmission coefficient of electrons from the well and barrier structures of this device. For calculating the transmission coefficient of electrons at the presence of electromagnetic radiation, Finite Difference Time Domain (FDTD method has been used and when there is no electromagnetic radiation Transfer Matrix Method (TMM and finite diffirence time domain method have been used. The results show that the presence of electromagnetic radiation causes resonant states other than principal resonant state (without presence of electromagnetic radiation to appear on the transmition coefficient curve where they are in distances from the principal peak and from each other. Also, the presence of electromagnetic radiation causes peaks other than principal peak to appear on the current-voltage characteristics of the device. Under electromagnetic radiation, the number of peaks on the current-voltage curve is smaller than the number of peaks on the current-voltage transmission coefficient. This is due to the fact that current-voltage curve is the result of integration on the energy of electrons, Thus, the sharper and low height peaks on the transmission coefficient do not appear on the current-voltage characteristic curve.

  5. Nonlinear Acoustics Used To Reduce Leakage Flow

    Science.gov (United States)

    Daniels, Christopher C.; Steinetz, Bruce M.

    2004-01-01

    attached to one end of the resonator while the other end remained open to ambient pressure. Measurements were taken at several values of applied pressure with the assembly stationary, oscillated at an off-resonance frequency, and then oscillated on-resonance. The three cases show that the flow through the conical resonator can be reduced by oscillating the resonator at the resonance frequency of the air contained within the cavity. The results are currently being compared with results obtained from a commercial computational fluid dynamics code. The objective is to improve the design through numerical simulation before fabricating a next-generation prototype sealing device. Future work is aimed at implementing acoustic seal design improvements to further reduce the leakage flow rate through the device and at reducing the device's overall size.

  6. Closed-form expression for the current/ voltage characteristics of pin solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Taretto, K.; Rau, U.; Werner, J.H. [Institut fuer Physikalische Elektronik, Pfaffenwaldring 47, 70569, Stuttgart (Germany)

    2003-12-01

    A closed-form expression for the current-voltage relationship of pin diodes and pin solar cells is obtained. The model considers drift and diffusion currents, and assumes a uniform electric field in the intrinsic layer, equal diffusion lengths for electrons and holes and a homogeneous generation rate. We show that both drift and diffusion currents must be taken into account to describe the current over a wide range of applied voltage. The inclusion of both transport mechanisms results in diode ideality factors between 1.8 at low, and 1.2 at high applied voltages. Comparisons of current/voltage characteristics and solar cell output parameters obtained from our model with experimental data of thin-film silicon solar cells show that our model accurately explains the output characteristics of pin solar cells. (orig.)

  7. Analysis of torque-current characteristic of brushless DC motor driven by three-phase H-bridge

    Institute of Scientific and Technical Information of China (English)

    2000-01-01

    Presents the simulation and analysis of the steady state characteristic of a brushless DC motor studies the torque-current characteristic of the motor as well and discusses the design of a current-measure circuit for torque controlling.

  8. Influence of Jet Angle and Ion Density of Cathode Side on Low Current Vacuum Arc Characteristics

    Institute of Scientific and Technical Information of China (English)

    WANG Lijun; JIA Shenli; SHI Zongqian

    2008-01-01

    In this study, the influence of the initial jet angles (IJAs) and ion number densities (INDs) at the cathode side on the low current vacuum arc (LCVA) characteristics is simulated and analysed. The results show that the ion temperature, electron temperature, ion number density, axial current density and plasma pressure all decrease with the increase of the cathode IJAs. It is also shown that LCVA can cause a current constriction for lower cathode IND, and the anode sheath potential is more nonuniform, which is mainly related to the nonuniform distribution of the axial current density at the anode side.

  9. Experimental study on hydrodynamic characteristics of vertical-axis floating tidal current energy power generation device

    Science.gov (United States)

    Ma, Yong; Li, Teng-fei; Zhang, Liang; Sheng, Qi-hu; Zhang, Xue-wei; Jiang, Jin

    2016-10-01

    To study the characteristics of attenuation, hydrostatic towage and wave response of the vertical-axis floating tidal current energy power generation device (VAFTCEPGD), a prototype is designed and experiment is carried out in the towing tank. Free decay is conducted to obtain attenuation characteristics of the VAFTCEPGD, and characteristics of mooring forces and motion response, floating condition, especially the lateral displacement of the VAFTCEPGD are obtained from the towing in still water. Tension response of the #1 mooring line and vibration characteristics of the VAFTCEPGD in regular waves as well as in level 4 irregular wave sea state with the current velocity of 0.6 m/s. The results can be reference for theoretical study and engineering applications related to VAFTCEPGD.

  10. 3DHZETRN: Neutron leakage in finite objects.

    Science.gov (United States)

    Wilson, John W; Slaba, Tony C; Badavi, Francis F; Reddell, Brandon D; Bahadori, Amir A

    2015-11-01

    The 3DHZETRN formalism was recently developed as an extension to HZETRN with an emphasis on 3D corrections for neutrons and light ions. Comparisons to Monte Carlo (MC) simulations were used to verify the 3DHZETRN methodology in slab and spherical geometry, and it was shown that 3DHZETRN agrees with MC codes to the degree that various MC codes agree among themselves. One limitation of such comparisons is that all of the codes (3DHZETRN and three MC codes) utilize different nuclear models/databases; additionally, using a common nuclear model is impractical due to the complexity of the software. It is therefore difficult to ascertain if observed discrepancies are caused by transport code approximations or nuclear model differences. In particular, an important simplification in the 3DHZETRN formalism assumes that neutron production cross sections can be represented as the sum of forward and isotropic components, where the forward component is subsequently solved within the straight-ahead approximation. In the present report, previous transport model results in specific geometries are combined with additional results in related geometries to study neutron leakage using the Webber 1956 solar particle event as a source boundary condition. A ratio is defined to quantify the fractional neutron leakage at a point in a finite object relative to a semi-infinite slab geometry. Using the leakage ratio removes some of the dependence on the magnitude of the neutron production and clarifies the effects of angular scattering and absorption with regard to differences between the models. Discussion is given regarding observed differences between the MC codes and conclusions drawn about the need for further code development. Although the current version of 3DHZETRN is reasonably accurate compared to MC simulations, this study shows that improved leakage estimates can be obtained by replacing the isotropic/straight-ahead approximation with more detailed descriptions. Published by

  11. 3DHZETRN: Neutron leakage in finite objects

    Science.gov (United States)

    Wilson, John W.; Slaba, Tony C.; Badavi, Francis F.; Reddell, Brandon D.; Bahadori, Amir A.

    2015-11-01

    The 3DHZETRN formalism was recently developed as an extension to HZETRN with an emphasis on 3D corrections for neutrons and light ions. Comparisons to Monte Carlo (MC) simulations were used to verify the 3DHZETRN methodology in slab and spherical geometry, and it was shown that 3DHZETRN agrees with MC codes to the degree that various MC codes agree among themselves. One limitation of such comparisons is that all of the codes (3DHZETRN and three MC codes) utilize different nuclear models/databases; additionally, using a common nuclear model is impractical due to the complexity of the software. It is therefore difficult to ascertain if observed discrepancies are caused by transport code approximations or nuclear model differences. In particular, an important simplification in the 3DHZETRN formalism assumes that neutron production cross sections can be represented as the sum of forward and isotropic components, where the forward component is subsequently solved within the straight-ahead approximation. In the present report, previous transport model results in specific geometries are combined with additional results in related geometries to study neutron leakage using the Webber 1956 solar particle event as a source boundary condition. A ratio is defined to quantify the fractional neutron leakage at a point in a finite object relative to a semi-infinite slab geometry. Using the leakage ratio removes some of the dependence on the magnitude of the neutron production and clarifies the effects of angular scattering and absorption with regard to differences between the models. Discussion is given regarding observed differences between the MC codes and conclusions drawn about the need for further code development. Although the current version of 3DHZETRN is reasonably accurate compared to MC simulations, this study shows that improved leakage estimates can be obtained by replacing the isotropic/straight-ahead approximation with more detailed descriptions.

  12. On Calculating the Current-Voltage Characteristic of Multi-Diode Models for Organic Solar Cells

    CERN Document Server

    Roberts, Ken

    2016-01-01

    We provide an alternative formulation of the exact calculation of the current-voltage characteristic of solar cells which have been modeled with a lumped parameters equivalent circuit with one or two diodes. Such models, for instance, are suitable for describing organic solar cells whose current-voltage characteristic curve has an inflection point, also known as an S-shaped anomaly. Our formulation avoids the risk of numerical overflow in the calculation. It is suitable for implementation in Fortran, C or on micro-controllers.

  13. Comment on "Electrical Conductivity and Current-Voltage Characteristics of Individual Conducting Polymer PEDOT Nanowires"

    Institute of Scientific and Technical Information of China (English)

    P. Ohlckers; P. Pipinys

    2009-01-01

    @@ In "Electrical Conductivity and Current-Voltage Characteristics of Individual Conducting Polymer PEDOT Nanowires", Long et al.[1] reported the currentvoltage ( Ⅰ - Ⅴ) characteristics of individual poly(3,4-ethylenedioxythiophene) (PEDOT) nanowires in the temperature range from 20 to 50K (Fig. 2(a)). The authors stated that at temperatures equal to 50 K and higher, the Ⅰ - Ⅴ curves were linear. With decreasing temperature the Ⅰ - Ⅴ curves gradually became nonlinear. The temperature behavior of Ⅰ - Ⅴ characteristics is not suitably explained.

  14. Current limiting characteristics of transformer type SFCL with coupled secondary windings according to its winding direction

    Energy Technology Data Exchange (ETDEWEB)

    Lim, Sung Hun [Dept. of Electrical Engineering, Soongsil University, Seoul (Korea, Republic of); Han, Tae Hee [Dept. of Aero Materials Engineering, Jungwon University, Goesan (Korea, Republic of)

    2017-06-15

    In this paper, the current limiting characteristics of the transformer type superconducting fault current limiter (SFCL) with the two coupled secondary windings due to its winding direction were analyzed. To analyze the dependence of transient fault current limiting characteristics on the winding direction of the additional secondary winding, the fault current limiting tests of the SFCL with an additional secondary winding, wound as subtractive polarity winding and additive polarity winding, were carried out. The time interval of quench occurrence between two superconducting elements comprising the transformer type SFCL with the additional secondary winding was confirmed to be affected by the winding direction of the additional secondary winding. In case of the subtractive polarity winding of the additional secondary winding, the time interval of the quench occurrence in two superconducting elements was shorter than the case of the additive polarity winding.

  15. Negative-resistance voltage-current characteristics of superconductor contact junctions for macro-scale applications

    CERN Document Server

    Takayasu, M; Minervini, J V; 10.1109/TASC.2003.812854

    2003-01-01

    Voltage-current characteristics of mechanical pressure contact junctions between superconducting wires are investigated using a voltage-driving method. It is found that the switching regions at low voltages result from negative resistance of the contact junction. The current transport of the contact junctions is discussed from the perspective of two existing models: the multiple Andreev reflections at the two SN interfaces of a SNS (Superconductor/Normal metal /Superconductor) junction and the inhomogeneous multiple Josephson weak-link array. (13 refs).

  16. Analytical form of current-voltage characteristic of cylindrical and spherical ionization chambers

    CERN Document Server

    Stoyanov, Dimitar G

    2007-01-01

    The basic processes of ionization and recombination of gas-filled ionization chamber are presented in this article. A differential equation describing the distribution of current densities in the volume of the ionization chamber is obtained from the balance of the particles and charges densities. As a result of the differential equation solving an analytical form of the current-voltage characteristic of cylindrical and spherical ionization chambers is got.

  17. 一种低漏电流六开关非隔离全桥光伏并网逆变器%H6 Non-isolated Full Bridge Grid-connected PV Inverters With Low Leakage Currents

    Institute of Scientific and Technical Information of China (English)

    张犁; 孙凯; 冯兰兰; 邢岩; 徐明

    2012-01-01

    为满足非隔离光伏并网发电系统对共模漏电流的限制,提出一种六开关逆变器拓朴(H6拓扑)。所提出的H6拓扑在功率传输模态时,进网电流半个工频周期流过3支开关管,而另半个工频周期流过2支开关管,故相对于H5拓扑,降低了通态损耗,有利于热应力均衡,且仍满足续流阶段光伏电池输出端与电网脱离的要求。详细分析拓扑的工作原理,并推论给出H6非隔离光伏并网逆变器的其它3种拓扑结构;比较分析了H5拓扑、Heric拓扑和H6拓扑的损耗和成本。通过1kW通用样机平台对比验证了上述3种拓扑的效率和共模特性。实验结果表明,H6拓扑的变换效率高于H5拓扑、但略低于Heric拓扑,共模特性优于Heric拓扑、但略劣于H5拓扑。%In order to meet the limit for common-mode leakage currents in grid-connected photovoltaic (PV) generation systems, a H6 non-isolated full bridge PV grid -connected inverter is proposed. In the power processing period, the grid-tied current flows through three power switches during one of half line cycles, while flows through only two power switches during another half line cycle. As a result, the conduction losses are reduced and the heat-stress balance is benefited with the proposed H6 topology, comparing with the H5 topology. The operation mode of the proposed topology is analyzed in detail and another three topologies of the H6 non-isolated full bridge grid-connected inverters has been derived. The power losses and costs are fairly compared among the H5 topology, Heric topology and the H6 topology. Finally, both of the conversion efficiency and common- mode performance of these topologies are compared with a universal prototype inverter rated at 1 kW. The experimental results show that the efficiency of the proposed H6 topology is higher than that of the H5 topology, while slightly being lower than that of the Heric topology. And the common

  18. Improvement of light-current characteristic linearity in a quantum well laser with asymmetric barriers

    DEFF Research Database (Denmark)

    Zubov, F. I.; Zhukov, A. E.; Shernyakov, Yu M.;

    2014-01-01

    The effect of asymmetric barriers on the light-current characteristic (LCC) of a quantum well laser was studied theoretically and experimentally. It is shown that the utilization of asymmetric barriers in a waveguide prevents the nonlinearity of LCC and, consequently, allows rising of the maximum...

  19. ELASTIC-SCATTERING AND THE CURRENT-VOLTAGE CHARACTERISTICS OF SUPERCONDUCTING NB-INAS-NB JUNCTIONS

    NARCIS (Netherlands)

    VANDERPOST, N; NITTA, J; TAKAYANAGI, H

    1993-01-01

    Superconducting niobium contacts are attached to a 0.8-mum-long epitaxially grown InAs channel sandwiched between insulating InGaAs layers. The current-voltage characteristics show nonlinearities at submultiples of the superconducting energy gap indicative of multiple-Andreev reflections. We demonst

  20. Current-voltage characteristics of bulk heterojunction organic solar cells: connection between light and dark curves

    Energy Technology Data Exchange (ETDEWEB)

    Boix, Pablo P.; Guerrero, Antonio; Garcia-Belmonte, Germa; Bisquert, Juan [Photovoltaic and Optoelectronic Devices Group, Departament de Fisica, Universitat Jaume I, ES-12071 Castello (Spain); Marchesi, Luis F. [Laboratorio Interdisciplinar de, Eletroquimica e Ceramica (LIEC), Universidade Federal de Sao Carlos (Brazil); Photovoltaic and Optoelectronic Devices Group, Departament de Fisica, Universitat Jaume I, ES-12071 Castello (Spain)

    2011-11-15

    A connection is established between recombination and series resistances extracted from impedance spectroscopy and current-voltage curves of polythiophene:fullerene organic solar cells. Recombination is shown to depend exclusively on the (Fermi level) voltage, which allows construction of the current-voltage characteristics in any required conditions based on a restricted set of measurements. The analysis highlights carrier recombination current as the determining mechanism of organic solar cell performance. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  1. EVA Suit Microbial Leakage Investigation Project

    Science.gov (United States)

    Falker, Jay; Baker, Christopher; Clayton, Ronald; Rucker, Michelle

    2016-01-01

    The objective of this project is to collect microbial samples from various EVA suits to determine how much microbial contamination is typically released during simulated planetary exploration activities. Data will be released to the planetary protection and science communities, and advanced EVA system designers. In the best case scenario, we will discover that very little microbial contamination leaks from our current or prototype suit designs, in the worst case scenario, we will identify leak paths, learn more about what affects leakage--and we'll have a new, flight-certified swab tool for our EVA toolbox.

  2. Current-voltage characteristics of light-emitting diodes under optical and electrical excitation

    Institute of Scientific and Technical Information of China (English)

    Wen Jing; Wen Yumei; Li Ping; Li Lian

    2011-01-01

    The factors influencing the current-voltage (Ⅰ-Ⅴ) characteristics of light-emitting diodes (LEDs) are investigated to reveal the connection of Ⅰ-Ⅴ characteristics under optical excitation and those under electrical excitation.By inspecting the Ⅰ-Ⅴ curves under optical and electrical excitation at identical injection current,it has been found that the Ⅰ-Ⅴ curves exhibit apparent differences in voltage values.Furthermore,the differences are found to originate from the junction temperatures in diverse excitation ways.Experimental results indicate that if the thermal effect of illuminating spot is depressed to an ignorable extent by using pulsed light,the junction temperature will hardly deflect from that under optical excitation,and then the Ⅰ-Ⅴ characteristics under two diverse excitation ways will be the same.

  3. Research on resistance characteristics of YBCO tape under short-time DC large current impact

    Science.gov (United States)

    Zhang, Zhifeng; Yang, Jiabin; Qiu, Qingquan; Zhang, Guomin; Lin, Liangzhen

    2017-06-01

    Research of the resistance characteristics of YBCO tape under short-time DC large current impact is the foundation of the developing DC superconducting fault current limiter (SFCL) for voltage source converter-based high voltage direct current system (VSC-HVDC), which is one of the valid approaches to solve the problems of renewable energy integration. SFCL can limit DC short-circuit and enhance the interrupting capabilities of DC circuit breakers. In this paper, under short-time DC large current impacts, the resistance features of naked tape of YBCO tape are studied to find the resistance - temperature change rule and the maximum impact current. The influence of insulation for the resistance - temperature characteristics of YBCO tape is studied by comparison tests with naked tape and insulating tape in 77 K. The influence of operating temperature on the tape is also studied under subcooled liquid nitrogen condition. For the current impact security of YBCO tape, the critical current degradation and top temperature are analyzed and worked as judgment standards. The testing results is helpful for in developing SFCL in VSC-HVDC.

  4. HTS-FCL EMTDC model considering nonlinear characteristics on fault current and temperature

    Energy Technology Data Exchange (ETDEWEB)

    Yoon, Jae-Young; Lee, Seung-Ryul [Korea Electrotechnology Research Institute (Korea, Republic of)

    2010-06-01

    One of the most serious problems of the KEPCO system is a higher fault current than the CB(Circuit breaker's SCC (Short Circuit Capacity). There are so many alternatives to reduce the higher fault current, such as the isolation of bus ties, enhancement of the CB's SCC, and the application of HVDC-BTB (Back to Back) or FCL (fault current limiter). However, these alternatives have drawbacks from the viewpoint of system stability and cost. As superconductivity technology has been developed, the resistive type (R-type) HTS-FCL (High Temperature Superconductor Fault Current Limiter) offers one of the important alternatives in terms of power loss and cost reduction in solving the fault current problem. To evaluate the accurate transient performance of R-type HTS-FCL, it is necessary for the dynamic simulation model to consider transient characteristics during the quenching and the recovery state. Against this background, this paper presents the new HTS-FCL EMTDC (Electro-Magnetic Transients including Direct Current) model considering the nonlinear characteristics on fault current and temperature.

  5. HTS-FCL EMTDC model considering nonlinear characteristics on fault current and temperature

    Science.gov (United States)

    Yoon, Jae-Young; Lee, Seung-Ryul

    2010-06-01

    One of the most serious problems of the KEPCO system is a higher fault current than the CB(Circuit breaker's SCC (Short Circuit Capacity). There are so many alternatives to reduce the higher fault current, such as the isolation of bus ties, enhancement of the CB's SCC, and the application of HVDC-BTB (Back to Back) or FCL (fault current limiter). However, these alternatives have drawbacks from the viewpoint of system stability and cost. As superconductivity technology has been developed, the resistive type (R-type) HTS-FCL (High Temperature Superconductor Fault Current Limiter) offers one of the important alternatives in terms of power loss and cost reduction in solving the fault current problem. To evaluate the accurate transient performance of R-type HTS-FCL, it is necessary for the dynamic simulation model to consider transient characteristics during the quenching and the recovery state. Against this background, this paper presents the new HTS-FCL EMTDC (Electro-Magnetic Transients including Direct Current) model considering the nonlinear characteristics on fault current and temperature.

  6. Rail temperature rise characteristics caused by linear eddy current brake of high-speed train

    Directory of Open Access Journals (Sweden)

    Xiaoshan Lu

    2014-12-01

    Full Text Available The rail temperature rises when the linear eddy current brake of high-speed train is working, which may lead to a change of rail physical characteristics or an effect on train operations. Therefore, a study concerning the characteristics of rail temperature rise caused by eddy current has its practical necessity. In the research, the working principle of a linear eddy current brake is introduced and its FEA model is established. According to the generation mechanism of eddy current, the theoretical formula of the internal energy which is produced by the eddy current is deduced and the thermal load on the rail is obtained. ANSYS is used to simulate the rail temperature changes under different conditions of thermal loads. The research result shows the main factors which contribute to the rising of rail temperature are the train speed, brake gap and exciting current. The rail temperature rises non-linearly with the increase of train speed. The rail temperature rise curve is more sensitive to the exciting current than the air gap. Moreover, the difference stimulated by temperature rising between rails of 60 kg/m and 75 kg/m is presented as well.

  7. Current transport mechanisms in mercury cadmium telluride diode

    Energy Technology Data Exchange (ETDEWEB)

    Gopal, Vishnu, E-mail: vishnu-46@yahoo.com, E-mail: wdhu@mail.sitp.ac.cn [Institute of Defence Scientists and Technologists, CFEES Complex, Brig. S. K. Majumdar Marg, Delhi 110054 (India); Li, Qing; He, Jiale; Hu, Weida, E-mail: vishnu-46@yahoo.com, E-mail: wdhu@mail.sitp.ac.cn [National Lab for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083 (China); He, Kai; Lin, Chun [Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083 (China)

    2016-08-28

    This paper reports the results of modelling of the current-voltage characteristics (I-V) of a planar mid-wave Mercury Cadmium Telluride photodiode in a gate controlled diode experiment. It is reported that the diode exhibits nearly ideal I-V characteristics under the optimum surface potential leading to the minimal surface leakage current. Deviations from the optimum surface potential lead to non ideal I–V characteristics, indicating a strong relationship between the ideality factor of the diode with its surface leakage current. Diode's I–V characteristics have been modelled over a range of gate voltages from −9 V to −2 V. This range of gate voltages includes accumulation, flat band, and depletion and inversion conditions below the gate structure of the diode. It is shown that the I–V characteristics of the diode can be very well described by (i) thermal diffusion current, (ii) ohmic shunt current, (iii) photo-current due to background illumination, and (iv) excess current that grows by the process of avalanche multiplication in the gate voltage range from −3 V to −5 V that corresponds to the optimum surface potential. Outside the optimum gate voltage range, the origin of the excess current of the diode is associated with its high surface leakage currents. It is reported that the ohmic shunt current model applies to small surface leakage currents. The higher surface leakage currents exhibit a nonlinear shunt behaviour. It is also shown that the observed zero-bias dynamic resistance of the diode over the entire gate voltage range is the sum of ohmic shunt resistance and estimated zero-bias dynamic resistance of the diode from its thermal saturation current.

  8. Current transport mechanisms in mercury cadmium telluride diode

    Science.gov (United States)

    Gopal, Vishnu; Li, Qing; He, Jiale; He, Kai; Lin, Chun; Hu, Weida

    2016-08-01

    This paper reports the results of modelling of the current-voltage characteristics (I-V) of a planar mid-wave Mercury Cadmium Telluride photodiode in a gate controlled diode experiment. It is reported that the diode exhibits nearly ideal I-V characteristics under the optimum surface potential leading to the minimal surface leakage current. Deviations from the optimum surface potential lead to non ideal I-V characteristics, indicating a strong relationship between the ideality factor of the diode with its surface leakage current. Diode's I-V characteristics have been modelled over a range of gate voltages from -9 V to -2 V. This range of gate voltages includes accumulation, flat band, and depletion and inversion conditions below the gate structure of the diode. It is shown that the I-V characteristics of the diode can be very well described by (i) thermal diffusion current, (ii) ohmic shunt current, (iii) photo-current due to background illumination, and (iv) excess current that grows by the process of avalanche multiplication in the gate voltage range from -3 V to -5 V that corresponds to the optimum surface potential. Outside the optimum gate voltage range, the origin of the excess current of the diode is associated with its high surface leakage currents. It is reported that the ohmic shunt current model applies to small surface leakage currents. The higher surface leakage currents exhibit a nonlinear shunt behaviour. It is also shown that the observed zero-bias dynamic resistance of the diode over the entire gate voltage range is the sum of ohmic shunt resistance and estimated zero-bias dynamic resistance of the diode from its thermal saturation current.

  9. Development of a new duct leakage test: DeltaQ

    Energy Technology Data Exchange (ETDEWEB)

    Walker,I.S.; Sherman,M.H.; Wempen, J.; Wang, D.; McWilliams, J.A.; Dickerhoff, D.J.

    2001-08-01

    Duct leakage is a key factor in determining energy losses from forced air heating and cooling systems. Several studies (Francisco and Palmiter 1997 and 1999, Andrews et al. 1998, and Siegel et al. 2001) have shown that the duct system efficiency cannot be reliably determined without good estimates of duct leakage. Specifically, for energy calculations, it is the duct leakage air flow to outside at operating conditions that is required. Existing test methods either precisely measure the size of leaks (but not the flow through them at operating conditions), or measure these flows with insufficient accuracy. The DeltaQ duct leakage test method was developed to provide improved estimates of duct leakage during system operation. In this study we developed the analytical calculation methods and the test procedures used in the DeltaQ test. As part of the development process, we have estimated uncertainties in the test method (both analytically and based on field data) and designed automated test procedures to increase accuracy and reduce the contributions of operator errors in performing field tests. In addition, the test has been evaluated in over 100 houses by several research teams to show that it can be used in a wide range of houses and to aid in finding limits or problems in field applications. The test procedure is currently being considered by ASTM as an update of an existing duct leakage standard.

  10. Measurement system for determination of current-voltage characteristics of PV modules

    Science.gov (United States)

    Idzkowski, Adam; Walendziuk, Wojciech; Borawski, Mateusz; Sawicki, Aleksander

    2015-09-01

    The realization of a laboratory stand for testing photovoltaic panels is presented here. The project of the laboratory stand was designed in SolidWorks software. The aim of the project was to control the electrical parameters of a PV panel. For this purpose a meter that measures electrical parameters i.e. voltage, current and power, was realized. The meter was created with the use of LabJack DAQ device and LabVIEW software. The presented results of measurements were obtained in different conditions (variable distance from the source of light, variable tilt angle of the panel). Current voltage characteristics of photovoltaic panel were created and all parameters could be detected in different conditions. The standard uncertainties of sample voltage, current, power measurements were calculated. The paper also gives basic information about power characteristics and efficiency of a solar cell.

  11. The Current-voltage Characteristics Simulation of the Betavoltaic Power Supply

    Directory of Open Access Journals (Sweden)

    S.U. Urchuk

    2015-12-01

    Full Text Available In order to optimize betavoltaic power supply it was calculated the current-voltage characteristics when changing the depth of the upper p-layer and at changing doping levels structure areas. It is shown that an increase in the depth reduces the short-circuit current and thus reduces the open circuit voltage. It has been observed that the concentration of the lightly doped region more significantly influence on the current-voltage characteristics than the depth of the p-n-junction. The concentration of the n-region, equal to 1014 cm – 3, can be considered as during betavoltaic power supply design. It is shown that, by increasing the power supply activity the conversion efficiency of the structure increases, too.

  12. Master Equation Approach to Current-Voltage Characteristics of Solar Cells

    Science.gov (United States)

    Oh, Sangchul; Zhang, Yiteng; Alharbi, Fahhad; Kais, Sabre

    2015-03-01

    The current-voltage characteristics of solar cells is obtained using quantum master equations for electrons, holes, and excitons, in which generation, recombination, and transport processes are taken into account. As a first example, we simulate a photocell with a molecular aggregate donor to investigate whether a delocalized quantum state could enhance the efficiency. As a second example, we calculate the current-voltage characteristics of conventional p-n junction solar cells and perovskite solar cells using the master equation. The connection between the drift-diffusion model and the master equation method is established. The short-circuit current and the open-circuit voltage are calculated numerically as a function of the intensity of the sunlight and material properties such as energy gaps, diffusion constants, etc.

  13. Modelling of current-voltage characteristics of infrared photo-detectors based on type – II InAs/GaSb super-lattice diodes with unipolar blocking layers

    Directory of Open Access Journals (Sweden)

    Vishnu Gopal

    2015-09-01

    Full Text Available It is shown that current-voltage characteristics of infrared photo-detectors based on type-II InAs/GaSb super-lattices with uni-polar blocking layers can be modelled similar to a junction diode with a finite series resistance on account of blocking barriers. As an example this paper presents the results of a study of current-voltage characteristics of a type II InAs/GaSb super-lattice diode with PbIbN architecture using a recently proposed [J. Appl. Phys. 116, 084502 (2014] method for modelling of illuminated photovoltaic detectors. The thermal diffusion, generation – recombination (g-r, and ohmic currents are found as principal components besides a component of photocurrent due to background illumination. The experimentally observed reverse bias diode current in excess of thermal current (diffusion + g-r, photo-current and ohmic shunt current is reported to be best described by an exponential function of the type, Iexcess = Ir0 + K1exp(K2 V, where Ir0, K1 and K2 are fitting parameters and V is the applied bias voltage. The present investigations suggest that the exponential growth of excess current with the applied bias voltage may be taking place along the localized regions in the diode. These localized regions are the shunt resistance paths on account of the surface leakage currents and/or defects and dislocations in the base of the diode.

  14. Air-Leakage Control Manual.

    Energy Technology Data Exchange (ETDEWEB)

    Maloney, Jim; Washington State Energy Office; United States. Bonneville Power Administration.

    1991-05-01

    This manual is for builders and designers who are interested in building energy-efficient homes. The purpose of the manual is to provide the how and why'' of controlling air leakage by means of a system called the Simple Caulk and Seal'' (SIMPLE{center dot}CS) system. This manual provides an overview of the purpose and contents of the manual; It discusses the forces that affect air leakage in homes and the benefits of controlling air leakage. Also discussed are two earlier approaches for controlling air leakage and the problems with these approaches. It describes the SIMPLE-{center dot}CS system. It outlines the standard components of the building envelope that require sealing and provides guidelines for sealing them. It outlines a step-by-step procedure for analyzing and planning the sealing effort. The procedure includes (1) identifying areas to be sealed, (2) determining the most effective and convenient stage of construction in which to do the sealing, and (3) designating the appropriate crew member or trade to be responsible for the sealing.

  15. Air-leakage control manual

    Energy Technology Data Exchange (ETDEWEB)

    Maloney, J. [Washington State Energy Office, Olympia, WA (United States)

    1991-05-01

    This manual is for builders and designers who are interested in building energy-efficient homes. The purpose of the manual is to provide the ``how and why`` of controlling air leakage by means of a system called the ``Simple Caulk and Seal`` (SIMPLE{center_dot}CS) system. This manual provides an overview of the purpose and contents of the manual; It discusses the forces that affect air leakage in homes and the benefits of controlling air leakage. Also discussed are two earlier approaches for controlling air leakage and the problems with these approaches. It describes the SIMPLE-{center_dot}CS system. It outlines the standard components of the building envelope that require sealing and provides guidelines for sealing them. It outlines a step-by-step procedure for analyzing and planning the sealing effort. The procedure includes (1) identifying areas to be sealed, (2) determining the most effective and convenient stage of construction in which to do the sealing, and (3) designating the appropriate crew member or trade to be responsible for the sealing.

  16. Effect of background parabolic current on characteristics and energetics of internal solitary waves by numerical simulation

    Institute of Scientific and Technical Information of China (English)

    L Haibin; XIE Jieshuo; YAO Yuan; XU Jiexin; CHEN Zhiwu; HE Yinghui; CAI Shuqun

    2016-01-01

    Based on modifications of the observed background parabolic current in upper layer of the northeastern South China Sea (SCS), the effects of eight kinds of background currents on the characteristics and energy conversion of internal solitary waves (ISWs) are investigated by an Internal Gravity Wave (IGW) model. It is found that, although the background current has little effect on the number of the generated ISWs, it reduces the resulted phase speed of ISW. When the background parabolic current appears with its lower boundary near or above the main thermocline, the ISW amplitude and the depth of the isopycnal undergoing maximum displacement increase;when the background parabolic current curvature is reduced, the ISW amplitude and the ratio of baroclinic to barotropic energy reduce, whilst the phase speed of ISW, the baroclinic energy, and the ratio of baroclinic kinetic energy (KE) to available potential energy (APE) increase; when the lower boundary of background parabolic current extends down to the seabed and the background current curvature is reduced, the ISW amplitude and phase speed decrease, whilst the barotropic kinetic energy, the baroclinic energy and the ratio of KE to APE increase. At a whole depth, when the lower background current curvature is reduced and the upper current curvature is increased, the ISW amplitude, and phase speed, the ratio of baroclinic to barotropic energy, the baroclinic energy, and the ratio of KE to APE all increase.

  17. Prediction on leakage and rate characteristics of CO2 storage%封存CO2的泄漏过程预测与泄漏速率的影响因素特性

    Institute of Scientific and Technical Information of China (English)

    刘永忠; 王乐; 张甲六

    2012-01-01

    地下封存CO2泄漏的评估方法和风险控制是碳捕集和封存(CCS)技术亟待解决的核心问题.为了揭示封存CO2泄漏过程的影响因素及其特性,本文建立两相流驱替过程数学模型描述封存CO2的泄漏过程,采用COMSOL Multiphysics 3.5a软件进行数值模拟.通过对基准问题及其解的拓展,分别对注入井与泄漏通道之间距离、泄漏通道半径、泄漏通道渗透率、CO2注入速率和CO2注入深度等因素对封存CO2泄漏过程的影响特性进行研究,通过过程模拟和数据分析得到了影响因素的定量函数关系.研究表明:封存CO2的渐近泄漏速率与注入井与泄漏通道之间距离倒数呈对数线性关系,与泄漏通道半径呈抛物线型关系,与注入速率呈线性关系;泄漏通道的绝对渗透率是CO2泄漏速率控制的关键因素,而CO2注入深度的增加并不能有效地降低CO2泄漏速率.本文的计算模型和数值模拟结果不仅揭示了地下封存CO2泄漏过程的影响因素与泄漏速率之间的定量关联规律,还可为地下封存CO2的封存地点选择、泄漏速率估计和泄漏风险评估提供工程分析方法和计算工具.%Evaluation method and risk control of COZ leakage are key issues for carbon capture and storage (CCS). In order to reveal affecting factors and features of CO2 leakage during injection, a two-phase flow model was proposed to describe the leakage process, and numerical simulations were conducted using a commercial software COMSOL Multiphysics 3. 5a. Based on comparison and extension of its solutions for a benchmark problem, the affecting factors, including distance between the injection well and leaky path, radius and permeability of leaky path, injection rate and injection depth, were investigated. The quantitative relationships between leakage rates and impact factors were obtained from simulations and data analysis. The results show that asymptotic leakage rates of CO2 are linearly

  18. Influence of current and temperature on discharge characteristics of electrochemical nickel−cadmium system

    Directory of Open Access Journals (Sweden)

    Todorović Andreja

    2010-01-01

    Full Text Available The paper elaborates determination of characteristic values in the discharging process of non-hermetic nickel-cadmium galvanic battery with nominal voltage Un = 60 V and nominal capacity qn = C5 = 190 Ah and its dependence from current and temperature. Study has been performed with the set of experimental metering of voltages, electromotive force, current from discharge time range and electromotive force in steady state regime before and after battery charging. Electromotive force characteristics are obtained by using the Nernst’s equation, while the least square method was used to determine the average values of internal electrical resistivity, power losses and efficiency level. These results were used in the approximate exponential functions to determine the range dependence of the efficiency level from the internal electrical resistance of discharge current in reliance from the temperature range. Obtained results show that, in accordance to the given voltage variation of 10% Un, this type of battery holds maximal full load current of one hour capacity at the temperature of 25°C and maximal full load current of two hours capacity at the temperature of −30°C. The methodology used in the case study covers determination of the electromotive force in time range based on the metered results of values during complete battery fullness and emptiness with prior determination of equilibrium constants of galvanic battery reaction through method suggested by the author of this paper. Further process, using the electromotive force values obtained through the aforementioned process, the metered current, and approximate polynomial function of the nominal discharge voltage characteristic determines range of battery internal electric resistance from time, followed by the selection of discharge cases with average values for: voltage, electromotive force, internal electrical resistance, available and utilized power, power losses, and battery efficiency

  19. EXPERIMENTAL INVESTIGATIONS ON DIFFUSION CHARACTERISTICS OF HIGH CONCENTRATION JETS IN ENVIRONMENTAL CURRENTS

    Institute of Scientific and Technical Information of China (English)

    张燕; 王道增; 樊靖郁

    2002-01-01

    By means of flow visualization and quantitative measurement, the diffusionpattern and concentration distribution characteristics of high concentration jets verticallydischarged into shallow moving waterbody were experimentally investigated in waterchannel. The interactions between the high concentration jets and environmental flowconditions were analysed, and the formulae of impinging point coordinate and transversespread angle are gained from data analysis. Experimental results indicate that the jets showcomplicated flow patterns and diffusion characteristics in near region, which are differentfrom common submerged jets, and spread downstream in the manner of density currents.

  20. Electric field characteristics of electroconvulsive therapy with individualized current amplitude: a preclinical study.

    Science.gov (United States)

    Lee, Won Hee; Lisanby, Sarah H; Laine, Andrew F; Peterchev, Angel V

    2013-01-01

    This study examines the characteristics of the electric field induced in the brain by electroconvulsive therapy (ECT) with individualized current amplitude. The electric field induced by bilateral (BL), bifrontal (BF), right unilateral (RUL), and frontomedial (FM) ECT electrode configurations was computed in anatomically realistic finite element models of four nonhuman primates (NHPs). We generated maps of the electric field strength relative to an empirical neural activation threshold, and determined the stimulation strength and focality at fixed current amplitude and at individualized current amplitudes corresponding to seizure threshold (ST) measured in the anesthetized NHPs. The results show less variation in brain volume stimulated above threshold with individualized current amplitudes (16-36%) compared to fixed current amplitude (30-62%). Further, the stimulated brain volume at amplitude-titrated ST is substantially lower than that for ECT with conventional fixed current amplitudes. Thus individualizing the ECT stimulus current could compensate for individual anatomical variability and result in more focal and uniform electric field exposure across different subjects compared to the standard clinical practice of using high, fixed current for all patients.

  1. Impact of the Indonesian throughflow on Agulhas leakage

    Directory of Open Access Journals (Sweden)

    D. Le Bars

    2013-02-01

    Full Text Available Using ocean models of different complexity we show that opening the Indonesian Passage between the Pacific and the Indian Ocean increases the input of Indian Ocean water into the South Atlantic via the Agulhas leakage. In a strongly eddying global ocean model this response results from an increased Agulhas Current transport and a constant proportion of Agulhas retroflection south of Africa. The leakage increases through an increased frequency of ring shedding events. In an idealized two-layer and flat-bottom eddy resolving model, the proportion of the Agulhas Current transport that retroflects is (for a wide range of wind stress forcing not affected by an opening of the Indonesian Passage. A linear ocean model is not able to explain this behavior which reveals the importance of mixed barotropic/baroclinic instabilities in controlling the Agulhas leakage.

  2. Experimental manifestation of the breakpoint region in the current-voltage characteristics of intrinsic Josephson junctions

    Science.gov (United States)

    Irie, A.; Shukrinov, Yu. M.; Oya, G.

    2008-10-01

    The experimental evidence of the breakpoint on the current-voltage characteristics (IVCs) of the stacks of intrinsic Josephson junctions (IJJs) is presented. The influence of the capacitive coupling on the IVCs of Bi2Sr2CaCu2Oy IJJs has been investigated. At 4.2K, clear breakpoint region is observed on the branches in the IVCs. It is found that due to the coupling between junctions, the hysteresis observed on the IVC is small compared to that expected from the McCumber parameter. Measurements agree well with the results predicted by the capacitively coupled Josephson junction model including the diffusion current.

  3. Impurity Deionization Effects on Surface Recombination DC Current-Voltage Characteristics in MOS Transistors

    Energy Technology Data Exchange (ETDEWEB)

    Chen Zuhui [Lee-Kuan-Yew Postdoctoral Fellow, 2007-2010, Nanyang Technological University, Singapore 639798 (Singapore); Jie Binbin; Sah Chihtang, E-mail: bb_jie@msn.com [Department of Physics, Xiamen University, Xiamen 361005 (China)

    2010-12-15

    Impurity deionization on the direct-current current-voltage characteristics from electron-hole recombination (R-DCIV) at SiO{sub 2}/Si interface traps in MOS transistors is analyzed using the steady-state Shockley-Read-Hall recombination kinetics and the Fermi distributions for electrons and holes. Insignificant distortion is observed over 90% of the bell-shaped R-DCIV curves centered at their peaks when impurity deionization is excluded in the theory. This is due to negligible impurity deionization because of the much lower electron and hole concentrations at the interface than the impurity concentration in the 90% range. (invited papers)

  4. Effects of hydrogen bonding on current-voltage characteristics of molecular junctions

    Science.gov (United States)

    Kula, Mathias; Jiang, Jun; Lu, Wei; Luo, Yi

    2006-11-01

    We present a first-principles study of hydrogen bonding effect on current-voltage characteristics of molecular junctions. Three model charge-transfer molecules, 2'-amino-4,4'-di(ethynylphenyl)-1-benzenethiolate (DEPBT-D), 4,4'-di(ethynylphenyl)-2'-nitro-1-benzenethiolate (DEPBT-A), and 2'-amino-4,4'-di(ethynylphenyl)-5'-nitro-1-benzenethiolate (DEPBT-DA), have been examined and compared with the corresponding hydrogen bonded complexes formed with different water molecules. Large differences in current-voltage characteristics are observed for DEPBT-D and DEPBT-A molecules with or without hydrogen bonded waters, while relatively small differences are found for DEPBT-DA. It is predicted that the presence of water clusters can drastically reduce the conductivities of the charge-transfer molecules. The underlying microscopic mechanism has been discussed.

  5. Issues behind Competitiveness and Carbon Leakage

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2008-07-01

    This report explores the vulnerability of heavy industry to carbon leakage and competitiveness loss. It reviews the existing literature on competitiveness and carbon leakage under uneven climate policies. It also suggests a statistical method to track carbon leakage, and applies this methodology to Phase I of the EU emissions trading scheme, for various industrial activities: iron and steel, cement, aluminium and refineries. Finally, it reviews measures to mitigate carbon leakage, as discussed in Australia, Canada, Europe, New Zealand and the US.

  6. A simple approximation for the current-voltage characteristics of high-power, relativistic diodes

    Science.gov (United States)

    Ekdahl, Carl

    2016-06-01

    A simple approximation for the current-voltage characteristics of a relativistic electron diode is presented. The approximation is accurate from non-relativistic through relativistic electron energies. Although it is empirically developed, it has many of the fundamental properties of the exact diode solutions. The approximation is simple enough to be remembered and worked on almost any pocket calculator, so it has proven to be quite useful on the laboratory floor.

  7. Simulation of a perfect CVD diamond Schottky diode steep forward current-voltage characteristic

    Science.gov (United States)

    Kukushkin, V. A.

    2016-10-01

    The kinetic equation approach to the simulation of the perfect CVD diamond Schottky diode current-voltage characteristic is considered. In result it is shown that the latter has a significantly steeper forward branch than that of perfect devices of such a type on usual semiconductors. It means that CVD diamond-based Schottky diodes have an important potential advantage over analogous devices on conventional materials.

  8. Critical current characteristics and history dependence in superconducting SmFeAsOF bulk

    Energy Technology Data Exchange (ETDEWEB)

    Ni, B; Ge, J [Department of Life, Environment and Materials Science, Fukuoka Institute of Technology, Fukuoka 811-0295 (Japan); Kiuchi, M; Otabe, E S [Faculty of Computer Science and Systems Engineering, Kyushu Institute of Technology, Iizuka 820-8502 (Japan); Gao, Z; Wang, L; Qi, Y; Zhang, X; Ma, Y, E-mail: nee@fit.ac.j [Key Laboratory of Applied Superconductivity, Institute of Electrical Engineering, Chinese Academy of Sciences, PO Box 2703, Beijing 100190 (China)

    2010-06-01

    The superconducting SmFeAsO{sub 1-x}F{sub x} (x=0.2) polycrystalline bulks were prepared by the powder-in-tube (PIT) method. The magnetic field and temperature dependences of critical current densities in the samples were investigated by resistive and ac inductive (Campbell's) methods. It was found that a fairly large shielding current density over 10{sup 9} A/m{sup 2}, which is considered to correspond to the local critical current density, flows locally with the perimeter size similar to the average grain size of the bulk samples, while an extremely low transport current density of about 10{sup 5} A/m{sup 2} corresponding to the global critical current density flows through the whole sample. Furthermore, a unique history dependence of global critical current density was observed, i.e., it shows a smaller value in the increasing-field process than that in the decreasing-field process. The history dependence of global critical current characteristic in our case can be ascribed to the existence of the weak-link property between the grains in SmFeAsO{sub 1-x}F{sub x} bulk.

  9. Critical current characteristics and history dependence in superconducting SmFeAsOF bulk

    Science.gov (United States)

    Ni, B.; Ge, J.; Kiuchi, M.; Otabe, E. S.; Gao, Z.; Wang, L.; Qi, Y.; Zhang, X.; Ma, Y.

    2010-06-01

    The superconducting SmFeAsO1-xFx (x=0.2) polycrystalline bulks were prepared by the powder-in-tube (PIT) method. The magnetic field and temperature dependences of critical current densities in the samples were investigated by resistive and ac inductive (Campbell's) methods. It was found that a fairly large shielding current density over 109 A/m2, which is considered to correspond to the local critical current density, flows locally with the perimeter size similar to the average grain size of the bulk samples, while an extremely low transport current density of about 105 A/m2 corresponding to the global critical current density flows through the whole sample. Furthermore, a unique history dependence of global critical current density was observed, i.e., it shows a smaller value in the increasing-field process than that in the decreasing-field process. The history dependence of global critical current characteristic in our case can be ascribed to the existence of the weak-link property between the grains in SmFeAsO1-xFx bulk.

  10. Indian Ocean sources of Agulhas leakage

    Science.gov (United States)

    Durgadoo, Jonathan V.; Rühs, Siren; Biastoch, Arne; Böning, Claus W. B.

    2017-04-01

    We examine the mean pathways, transit timescales, and transformation of waters flowing from the Pacific and the marginal seas through the Indian Ocean (IO) on their way toward the South Atlantic within a high-resolution ocean/sea-ice model. The model fields are analyzed from a Lagrangian perspective where water volumes are tracked as they enter the IO. The IO contributes 12.6 Sv to Agulhas leakage, which within the model is 14.1 ± 2.2 Sv, the rest originates from the South Atlantic. The Indonesian Through-flow constitutes about half of the IO contribution, is surface bound, cools and salinificates as it leaves the basin within 10-30 years. Waters entering the IO south of Australia are at intermediate depths and maintain their temperature-salinity properties as they exit the basin within 15-35 years. Of these waters, the contribution from Tasman leakage is 1.4 Sv. The rest stem from recirculation from the frontal regions of the Southern Ocean. The marginal seas export 1.0 Sv into the Atlantic within 15-40 years, and the waters cool and freshen on-route. However, the model's simulation of waters from the Gulfs of Aden and Oman are too light and hence overly influenced by upper ocean circulations. In the Cape Basin, Agulhas leakage is well mixed. On-route, temperature-salinity transformations occur predominantly in the Arabian Sea and within the greater Agulhas Current region. Overall, the IO exports at least 7.9 Sv from the Pacific to the Atlantic, thereby quantifying the strength of the upper cell of the global conveyor belt.

  11. Study on rejection characteristic of current loop to the base disturbance of optical communication system

    Science.gov (United States)

    Mao, Yao; Deng, Chao; Liu, Qiong; Cao, Zheng

    2016-10-01

    As laser has narrow transmitting beam and small divergence angle, the LOS (Line of Sight) stabilization of optical communication system is a primary precondition of laser communication links. Compound axis control is usually adopted in LOS stabilization of optical communication system, in which coarse tracking and fine tracking are included. Rejection against high frequency disturbance mainly depends on fine tracking LOS stabilization platform. Limited by different factors such as mechanical characteristic of the stabilization platform and bandwidth/noise of the sensor, the control bandwidth of LOS stabilization platform is restricted so that effective rejection of high frequency disturbance cannot be achieved as it mainly depends on the isolation characteristic of the platform itself. It is proposed by this paper that current loop may reject the effect of back-EMF. By adopting the method of electric control, high frequency isolation characteristic of the platform can be improved. The improvement effect is similar to increasing passive vibration reduction devices. Adopting the double closed loop control structure of velocity and current with the combining of the rejection effect of back-EMF caused by current loop is equivalent to reducing back-EMF coefficient, which can enhance the isolation ability of the LOS stabilization platform to high frequency disturbance.

  12. Heat exchanger leakage problem location

    Directory of Open Access Journals (Sweden)

    Jícha Miroslav

    2012-04-01

    Full Text Available Recent compact heat exchangers are very often assembled from numerous parts joined together to separate heat transfer fluids and to form the required heat exchanger arrangement. Therefore, the leak tightness is very important property of the compact heat exchangers. Although, the compact heat exchangers have been produced for many years, there are still technological problems associated with manufacturing of the ideal connection between the individual parts, mainly encountered with special purpose heat exchangers, e.g. gas turbine recuperators. This paper describes a procedure used to identify the leakage location inside the prime surface gas turbine recuperator. For this purpose, an analytical model of the leaky gas turbine recuperator was created to assess its performance. The results obtained are compared with the experimental data which were acquired during the recuperator thermal performance analysis. The differences between these two data sets are used to indicate possible leakage areas.

  13. Electrolyte leakage as an indicator

    Directory of Open Access Journals (Sweden)

    ahmad nezami

    2009-06-01

    Full Text Available In order to evaluate the electrolyte leakage as an indicator of freezing injury in colza (Brassica napus L. genotypes under controlled conditions, a trial carried out at the green house of College of Agriculture, Ferdowsi University of Mashhad. In this study 10 rapeseed genotypes, with 5 temperatures (0, -4, -8, -12 and -16 °C on subplot and acclimation and non acclimation on main plot were evaluated on RCD factorial split plot with two replications. Plants were kept until 3-5 leaf stage in green house condition with 23/16 2 °C (day/night and natural photoperiod. Pots were subjected to acclimation (for three weeks or non acclimation that plants immediately frozen.For acclimation treatment after three weeks freezing was done in thermogradient freezer. The cell membrane integrity was measured through electrolyte leakage and the lethal temperature 50 (LT50 of samples also were determined. There were significant differences (p

  14. Heat exchanger leakage problem location

    Science.gov (United States)

    Hejčík, Jiří; Jícha, Miroslav

    2012-04-01

    Recent compact heat exchangers are very often assembled from numerous parts joined together to separate heat transfer fluids and to form the required heat exchanger arrangement. Therefore, the leak tightness is very important property of the compact heat exchangers. Although, the compact heat exchangers have been produced for many years, there are still technological problems associated with manufacturing of the ideal connection between the individual parts, mainly encountered with special purpose heat exchangers, e.g. gas turbine recuperators. This paper describes a procedure used to identify the leakage location inside the prime surface gas turbine recuperator. For this purpose, an analytical model of the leaky gas turbine recuperator was created to assess its performance. The results obtained are compared with the experimental data which were acquired during the recuperator thermal performance analysis. The differences between these two data sets are used to indicate possible leakage areas.

  15. Reverse Current Characteristics of InP Gunn Diodes for W-Band Waveguide Applications.

    Science.gov (United States)

    Kim, Hyun-Seok; Heo, Jun-Woo; Chol, Seok-Gyu; Ko, Dong-Sik; Rhee, Jin-Koo

    2015-07-01

    InP is considered as the most promising material for millimeter-wave laser-diode applications owing to its superior noise performance and wide operating frequency range of 75-110 GHz. In this study, we demonstrate the fabrication of InP Gunn diodes with a current-limiting structure using rapid thermal annealing to modulate the potential height formed between an n-type InP active layer and a cathode contact. We also explore the reverse current characteristics of the InP Gunn diodes. Experimental results indicate a maximum anode current and an oscillation frequency of 200 mA and 93.53 GHz, respectively. The current-voltage characteristics are modeled by considering the Schottky and ohmic contacts, work function variations, negative differential resistance (NDR), and tunneling effect. Although no direct indication of the NDR is observed, the simulation results match the measured data well. The modeling results show that the NDR effect is always present but is masked because of electron emission across the shallow Schottky barrier.

  16. 小流量下周向弯曲叶片叶顶泄漏流特性的实验研究%The study on the unsteady characteristics of tip leakage flow in circumferential skewed axial fan under off-design conditions

    Institute of Scientific and Technical Information of China (English)

    金光远; 吴亚东; 欧阳华; 杜朝辉

    2013-01-01

    对带有周向前弯和周向后弯叶片的低压轴流风机,采用壁面动态压力测量技术试验研究了小流量工况下叶顶泄漏流的频谱特性.在机匣壁面布置动态压力传感器捕捉由泄漏流诱发的壁面压力信号,基于测量结果详细阐述了小流量工况下周向弯曲叶片叶顶泄漏流诱发的流动不稳定性.结果表明:随流量的降低,泄漏涡引起的频率分量逐步凸显,并向更低频段转移,具有明显的宽频特性;周向弯曲叶片控制了泄漏流动从前缘至尾缘的传播速度,前弯叶轮的泄漏流动传播速度最慢,后弯叶轮次之;周向弯曲叶片对叶顶泄漏流诱发的不稳定流动具有控制作用.%In this paper, the unsteady characteristics of tip leakage flow in axial fans with circumferential skewed blades were investigated at off-design conditions using wall pressure test. The static pressure fluctuations near blade tip were captured at off-design conditions by using pressure sensors mounted on casing wall. From the measured results, instantaneous characteristics of tip leakage flow in circumferential skewed fans were analyzed. Based on the measurement results, as the flow rate decreases, the broadband frequency components of tip leakage flow tend to increase in the low frequency domain. The forward-skewed blade is found to be effective in controlling tip leakage flow to expand from blade leading edge to tail edge, the TLF component of the BSK rotor propagates more fast than that of FSK rotor. The instability of tip leakage flow under off-design conditions is controlled by circumferential skewed blades.

  17. NONLINEAR CURRENT-VOLTAGE CHARACTERISTICS OF CONDUCTIVE POLYETHYLENE COMPOSITES WITH CARBON BLACK FILLED PET MICROFIBRILS

    Institute of Scientific and Technical Information of China (English)

    Qian-ying Chen; Jing Gao; Kun Dai; Huan Pang; Jia-zhuang Xu; Jian-hua Tang; Zhong-ming Li

    2013-01-01

    Current-voltage electrical behavior of in situ microfibrillar carbon black (CB)/poly(ethylene terephthalate)(PET)/polyethylene (PE) (m-CB/PET/PE) composites with various CB concentrations at ambient temperatures was studied under a direct-current electric field.The current-voltage (Ⅰ-Ⅴ) curves exhibited nonlinearity beyond a critical value of voltage.The dynamic random resistor network (DRRN) model was adopted to semi-qualitatively explain the nonlinear conduction behavior of m-CB/PET/PE composites.Macroscopic nonlinearity originated from the interracial interactions between CB/PET micro fibrils and additional conduction channels.Combined with the special conductive networks,an illustration was proposed to interpret the nonlinear Ⅰ-Ⅴ characteristics by a field emission or tunneling mechanism between CB particles in the CB/PET microfibers intersections.

  18. Intermonsoon Variation of Physical Characteristics and Current Circulation along the East Coast of Peninsular Malaysia

    Directory of Open Access Journals (Sweden)

    Mohd Fadzil Mohd Akhir

    2014-01-01

    Full Text Available Data from eight cruises spanning from 2002 to 2007 are used to investigate the seasonal changes in water characteristics and current circulation in southern South China Sea along the East Coast of Peninsular Malaysia. The surveys were made during two intermonsoon periods which are during March/April and September/October. In addition, monthly sea surface temperature from Moderate Resolution Imaging Spectroradiometer (MODIS is used to provide wider coverage of spatial and temporal for seasonality study. Overall, the area shares different physical properties between the two seasons. During September/October temperature is lower and salinity is higher compared to the data during Mac/April/May. The current along the East Coast of Peninsular Malaysia also shows seasonality, with dominant current flow southward during Mac/April and northward during September/October.

  19. Characteristic Analysis and Control of a Hybrid Excitation Linear Eddy Current Brake

    Directory of Open Access Journals (Sweden)

    Baoquan Kou

    2015-07-01

    Full Text Available In this paper, a novel hybrid excitation linear eddy current brake is presented as a braking system for high-speed road and rail vehicles. The presence of the permanent magnets (PMs, whose flux lines in the primary core are oppositely directed with respect to the flux lines by the excitation windings, has the effect of mitigating the saturation of the iron in the teeth of the primary core. This allows the brake to be fed with more intense currents, improving the braking force. First, using the magnetic equivalent circuit method and the layer theory approach, the analytical model of the hybrid excitation linear eddy current brake was developed, which can account for the saturation effects occurring in the iron parts. The saturation effects make the design and control of eddy current brakes more difficult. Second, the relationship between the braking force characteristics and the design parameters were analyzed to provide useful information to the designers of eddy current brakes. Then, the controller of the hybrid excitation linear eddy current brake was designed to control the amplitude of the braking force. Finally, experimental measurements were conducted to verify the validity of the theoretical analysis.

  20. Quantification Of Leakage In Microvessels Using Entropy

    Science.gov (United States)

    Desoky, Ahmed H.; O'Connor, Carol; Harris, Patrick D.; Hall, Steven

    1989-05-01

    This paper describes the use of entropy to quantify leakage of large molecules in a microvascular system. This measure can be used as a global parameter to characterize leakage. A software package for analysis of a sequence of images comprising leakage in rat cremaster tissue has been developed. The analysis is based on the statistics of both gray level components and frequency components of the images. Results show that entropy provides a better measure of leakage because it does not depend on variation in illumination or translation and rotation of image objects. Moreover entropy based on frequency components provides a more sensitive leakage measure than entropy based on gray level components.

  1. Surge current capabilities and isothermal current-voltage characteristics of high-voltage 4H-SiC junction barrier Schottky rectifiers

    Science.gov (United States)

    Palmour, J. W.; Levinshtein, M. E.; Ivanov, P. A.; Zhang, Q. J.

    2015-06-01

    Isothermal forward current-voltage characteristics of high-voltage 4H-SiC junction barrier Schottky rectifiers (JBS) have been studied for the first time. Isothermal characteristics were measured with JBS having a blocking voltage of 1700 V up to a current density j  ≈  4200 A cm-2 in the temperature range 297-460 K. Quasi-isothermal current-voltage characteristics of these devices were studied with injection of minority carriers (holes) up to j  ≈  7200 A cm-2 and ambient temperatures of 297 and 460 K. The isothermal forward current-voltage characteristics make it possible to numerically calculate (for example, by an iteration procedure) the overheating in an arbitrary operation mode.

  2. Conversion efficiency of an energy harvester based on resonant tunneling through quantum dots with heat leakage

    Science.gov (United States)

    Kano, Shinya; Fujii, Minoru

    2017-03-01

    We study the conversion efficiency of an energy harvester based on resonant tunneling through quantum dots with heat leakage. Heat leakage current from a hot electrode to a cold electrode is taken into account in the analysis of the harvester operation. Modeling of electrical output indicates that a maximum heat leakage current is not negligible because it is larger than that of the heat current harvested into electrical power. A reduction of heat leakage is required in this energy harvester in order to obtain efficient heat-to-electrical conversion. Multiple energy levels of a quantum dot can increase the output power of the harvester. Heavily doped colloidal semiconductor quantum dots are a possible candidate for a quantum-dot monolayer in the energy harvester to reduce heat leakage, scaling down device size, and increasing electrical output via multiple discrete energy levels.

  3. Understanding Instrumental Stokes Leakage in Murchison Widefield Array Polarimetry

    CERN Document Server

    Sutinjo, Adrian; Lenc, Emil; Wayth, Randall B; Padhi, Shantanu; Hall, Peter; Tingay, Steven J

    2014-01-01

    This paper offers an electromagnetic, more specifically array theory, perspective on understanding strong instrumental polarization effects for planar low-frequency "aperture arrays" with the Murchison Widefield Array (MWA) as an example. A long-standing issue that has been seen here is significant instrumental Stokes leakage after calibration, particularly in Stokes Q at high frequencies. A simple model that accounts for inter-element mutual coupling is presented which explains the prominence of Q leakage seen when the array is scanned away from zenith in the principal planes. On these planes, the model predicts current imbalance in the X (E-W) and Y (N-S) dipoles and hence the Q leakage. Although helpful in concept, we find that this model is inadequate to explain the full details of the observation data. This finding motivates further experimentation with more rigorous models that account for both mutual coupling and embedded element patterns. Two more rigorous models are discussed: the "full" and "average...

  4. Electrical Conductivity and Current-Voltage Characteristics of Individual Conducting Polymer PEDOT Nanowires

    Institute of Scientific and Technical Information of China (English)

    LONG Yun-Ze; DUVAIL Jean-Luc; CHEN Zhao-Jia; JIN Ai-Zi; GU Chang-Zhi

    2008-01-01

    We report the current-voltage (I-V) characteristics and electrical conductivity of individual template-synthesized poly(3,4-ethylenedioxythiophene) (PEDOT) nanowires (190 ± 6 nm in diameter and σRT : 11.2±2Ω-1cm-1)over a wide temperature range from 300 to 10K. With lowering temperature, the Ⅰ- Ⅴ characteristics become nonlinear around 50 K, and a clear Coulomb gap-like structure appears in the differential conductance (dI/dV)spectra. The temperature dependence of the resistance below 70 K follows ln R ∝ T-1/2, which can be interpreted as Efros-Shklovskii hopping conduction in the presence of a Coulomb gap. In addition, the influences of measurement methods such as the applied bias voltage magnitude, the two-probe and four-probe techniques used in the resistance measurements are also reported and discussed.

  5. An unusually energetic basaltic phreatomagmatic eruption: Using deposit characteristics to constrain dilute pyroclastic density current dynamics

    Science.gov (United States)

    Brand, Brittany D.; Clarke, Amanda B.

    2012-10-01

    Multiple, highly erosive base surges of the Table Rock Complex tuff ring (TRC2), Oregon, produced dune-bedded deposits with crest to crest bedform wavelengths up to 200 m, which are amongst the largest ever recognized in the deposits of pyroclastic density currents. Here we use bedform wavelength, surmounted obstacles, and a large chute-and-pool feature to estimate near-source velocities (118-233 m s- 1), lower-bound velocities at radial distances of 1.6, 2 and 4.7 km from source (34, 29 and 20 m s- 1, respectively), and corresponding column collapse heights (up to 2.8 km). This paper represents one of the few studies that attempt to quantify flow characteristics, such as emplacement velocities at different distances from source, eruption column collapse height, and eruptive energy, based on deposit characteristics.

  6. AC over-current characteristics of YBCO coated conductor with copper stabilizer layer considering insulation layer

    Science.gov (United States)

    Du, H.-I.; Kim, M.-J.; Kim, Y.-J.; Lee, D.-H.; Han, B.-S.; Song, S.-S.

    2010-11-01

    Compared with the first-generation BSCCO wire, the YBCO thin-film wire boasts low material costs and high Jc and superior magnetic-field properties, among other strengths. Meanwhile, the previous BSCCO wire material for superconducting cables has been researched on considerably with regard to its post-wire quenching characteristics during the application of an alternating over-current. In this regard, the promising YBCO thin-film wire has yet to be further researched on. Moreover, still lacking is research on the YBCO thin-film wire with insulating layers, which is essential in the manufacture of superconducting cables, along with the testing of the application of an alternating over-current to the wire. In this study, YBCO thin-film wires with copper-stabilizing layers were used in testing alternating over-current application according to the presence or absence of insulating layers and to the thickness of such layers, to examine the post-quenching wire resistance increase and quenching trends. The YBCO thin-film wire with copper-stabilizing layers has a critical temperature of 90 K and a critical current of 85 A rms. Moreover, its current application cycle is 5.5 cycles, and its applied currents are 354, 517, 712, and 915 A peak. These figures enabled the YBCO thin-film wires with copper-stabilizing layers to reach 90, 180, 250, and 300 K, respectively, in this study. These temperatures serve as a relative reference to examine the post-quenching wire properties following the application of an alternating over-current.

  7. Basic Characteristics of New Developed Higher-Voltage Direct-Current Power-Feeding Prototype System

    Science.gov (United States)

    Babasaki, Tadatoshi; Tanaka, Toshimitsu; Tanaka, Toru; Nozaki, Yousuke; Aoki, Tadahito; Kurokawa, Fujio

    High efficiency power feeding systems are effective solutions for reducing the ICT power consumption with reducing power consumption of the ICT equipment and cooling systems. A higher voltage direct current (HVDC) power feeding system prototype was produced. This system is composed of a rectifier equipment, power distribution unit, batteries, and the ICT equipment. The configuration is similar to a -48V DC power supply system. The output of the rectifier equipment is 100kW, and the output voltage is 401.4V. This paper present the configuration of the HVDC power feeding system and discuss its basic characteristics in the prototype system.

  8. Current voltage characteristics of intrinsic Josephson junctions with charge-imbalance effect

    Science.gov (United States)

    Shukrinov, Yu. M.; Mahfouzi, F.

    2007-09-01

    The current-voltage characteristics (IVC) of intrinsic Josephson junctions are numerically calculated taking into account the quasiparticle charge-imbalance effect. We solve numerically the full set of the equations including second order differential equations for phase differences, kinetic equations and generalized Josephson relations for a stack of Josephson junctions. The boundary conditions due to the proximity effect are used. We obtain the branch structure of IVC and investigate it as a function of disequilibrium parameter at different values of coupling constant and McCumber parameter. An increase in the disequilibrium parameter essentially changes the character of IVC at large values of McCumber parameter.

  9. Current-voltage characteristics of intrinsic Josephson junctions with charge-imbalance effect

    Energy Technology Data Exchange (ETDEWEB)

    Shukrinov, Yu.M. [Joint Institute for Nuclear Research, 141980 Dubna (Russian Federation); Physical Technical Institute, Dushanbe 734063 (Tajikistan)], E-mail: shukrinv@theor.jinr.ru; Mahfouzi, F. [Institute for Advanced Studies in Basic Sciences, P.O. Box 45195-1159, Zanjan (Iran, Islamic Republic of)

    2007-09-01

    The current-voltage characteristics (IVC) of intrinsic Josephson junctions are numerically calculated taking into account the quasiparticle charge-imbalance effect. We solve numerically the full set of the equations including second order differential equations for phase differences, kinetic equations and generalized Josephson relations for a stack of Josephson junctions. The boundary conditions due to the proximity effect are used. We obtain the branch structure of IVC and investigate it as a function of disequilibrium parameter at different values of coupling constant and McCumber parameter. An increase in the disequilibrium parameter essentially changes the character of IVC at large values of McCumber parameter.

  10. Experimental manifestation of the breakpoint region in the current-voltage characteristics of intrinsic Josephson junctions

    OpenAIRE

    Irie, A.; Shukrinov, Yu M.; Oya, G.

    2008-01-01

    The experimental evidence of the breakpoint on the current-voltage characteristics (IVCs) of the stacks of intrinsic Josephson junctions (IJJs) is presented. The influence of the capacitive coupling on the IVCs of Bi$_2$Sr$_2$CaCu$_2$O$_y$ IJJs has been investigated. At 4.2 K, clear breakpoint region is observed on the branches in the IVCs. It is found that the hysteresis observed on the IVC is suppressed due to the coupling compared with that expected from the McCumber parameter. Measurement...

  11. Influence of direct current plasma magnetron sputtering parameters on the material characteristics of polycrystalline copper films

    Energy Technology Data Exchange (ETDEWEB)

    Chan, K.-Y. [Thin Film Laboratory, Faculty of Engineering, Multimedia University, Jalan Multimedia, 63100 Cyberjaya, Selangor (Malaysia)], E-mail: k.y.chan@fz-juelich.de; Luo, P.-Q.; Zhou, Z.-B. [Department of Physics, Shanghai Jiao Tong University, 800 Dongchuan Road, 200240 Shanghai (China); Tou, T.-Y.; Teo, B.-S. [Thin Film Laboratory, Faculty of Engineering, Multimedia University, Jalan Multimedia, 63100 Cyberjaya, Selangor (Malaysia)

    2009-03-01

    Physical vapor processes using glow plasma discharge are widely employed in microelectronic industry. In particular magnetron sputtering is a major technique employed for the coating of thin films. This paper addresses the influence of direct current (DC) plasma magnetron sputtering parameters on the material characteristics of polycrystalline copper (Cu) thin films coated on silicon substrates. The influence of the sputtering parameters including DC plasma power and argon working gas pressure on the electrical and structural properties of the thin Cu films was investigated by means of surface profilometer, four-point probe and atomic force microscopy.

  12. Current-voltage characteristics of an individual helical CdS nanowire rope

    Institute of Scientific and Technical Information of China (English)

    Long Yun-Ze; Wang Wen-Long; Bai Feng-Lian; Chen Zhao-Jia; Jin Ai-Zi; Gu Chang-Zhi

    2008-01-01

    This paper studies the electronic transport in an individual helically twisted CdS nanowire rope, on which platinum microleacls are attached by focused-ion beam deposition. The current-voltage (Ⅰ - Ⅴ ) characteristics are nonlinear from 300 down to 60 K. Some step-like structures in the Ⅰ - Ⅴ curves and oscillation peaks in the differential conductance (dⅠ/dⅤ - Ⅴ) curves have been observed even at room temperature. It proposes that the observed behaviour can be attributed to Coulomb-blockade transport in the one-dimensional CdS nanowires with diameters of 6-10 nm.

  13. Temperature-dependent current-voltage characteristics of niobium SNIS Josephson junctions

    Energy Technology Data Exchange (ETDEWEB)

    Lacquaniti, V; Andreone, D; Cassiago, C; De Leo, N; Fretto, M; Sosso, A [National Institute of Metrological Research, Electromagnetism Division, Strada delle Cacce 91, 10135 Torino (Italy); Belogolovskii, M, E-mail: v.lacquaniti@inrim.i [Donetsk Physical and Technical Institute, National Academy of Sciences of Ukraine, Str. Rosa Luxemburg. 72, 83114 Donetsk (Ukraine)

    2010-06-01

    Motivated by a search for a suitable technology to fabricate Josephson junctions with a tunable damping regime, we performed a systematic study of the temperature effect on the critical current in Nb/Al-AlO{sub x}-Nb heterostructures with a nanometer-thick Al interlayer. For Al layer thicknesses ranging from 40 to 110 nm, we have observed a transition from hysteretic (below 4.2 K) to non-hysteretic (above 4.2 K) current-voltage curves. Measured supercurrent-vs-temperature characteristics which significantly differ from those of traditional SIS and SNS devices are interpreted in terms of the superconducting proximity effect between Al and Nb films. Thermal stability and good reproducibility of our junctions are demonstrated.

  14. Luminescence, radiative recombination, and current voltage characteristics in sensitized TiO2 solar cells

    Science.gov (United States)

    Smestad, Greg P.

    1992-12-01

    A connection is made between the luminescence or radiative recombination in an absorber material and the current voltage characteristics of a quantum converter of light. A relationship between luminescence and voltage is derived, using detailed balance and the chemical potential of the excitation, which is similar to that obtained using the techniques of Shockley and Queisser or R. T. Ross. This model relates the absorptivity and photoluminescence efficiency of the light absorber to the I V curve. In this way both thermodynamic properties, or voltage, and the kinetics, or charge transfer and current, can be combined in order to optimize materials and configurations. The model is applied to dye sensitized Ti02 solar cells, and compared with preliminary experimental data for Ru based charge transfer dyes and inorganic compounds. The luminescence model is found to be applicable to dye sensitized converters, as well as to standard silicon solar cells, light detectors, and LEDs.

  15. Characteristics analysis and parameters optimization for the grating eddy current displacement sensor

    Institute of Scientific and Technical Information of China (English)

    Hong-li QI; Hui ZHAO; Wei-wen LIU

    2009-01-01

    The grating eddy current displacement sensor (GECDS) for distance or position measurement used in watertight electronic calipers was described. The sensor relies on repetitive variation of inductance against displacement caused by the change of coupling areas between moving coils and static reflectors. The investigations focused on setting up and utilizing a computer model of the 3D eddy current fields and geometry to analyze causes of the production of measurement blind areas, and to investigate effects of the sensor parameters, such as axial gap between coils and reflectors, reflector length and reflector width on characteristics of the sensor. Simulation results indicated that the sensor has the smallest nonlinearity error of 0.15%, which agrees well with the experimental results.

  16. Dark-current characteristics of GaN-based UV avalanche photodiodes

    Science.gov (United States)

    Xu, Jintong; Chang, Chao; Li, Xiangyang

    2015-04-01

    For UV detecting, it needs high ratio of signal to noise, which means high responsibility and low noise. GaN-based avalanche photodiodes can provide a high internal photocurrent gain. In this paper, we report the testing and characterization of GaN based thin film materials, optimization design of device structure, the device etching and passivation technology, and the photoelectric characteristics of the devices. Also, uniformity of the device was obtained. The relationship between dark current and material quality or device processes was the focus of this study. GaN based material with high aluminum components have high density defects. Scanning electron microscope, cathodoluminescence spectra, X-ray double crystal diffraction and transmission spectroscopy testing were employed to evaluate the quality of GaN-based material. It shows that patterned sapphire substrate or thick AlN buffer layer is more effective to get high quality materials. GaN-based materials have larger hole ionization coefficient, so back incident structure were adopted to maximize the hole-derived multiplication course and it was helped to get a smaller multiplication noise. The device with separate absorption and multiplication regions is also prospective to reduce the avalanche noise. According to AlGaN based material characteristics and actual device fabrication, device structure was optimized further. Low physical damage inductively coupled plasma (ICP) etching method was used to etch mesa and wet etching method was employed to treat mesa damage. Silica is passivation material of device mesa. For solar-blind ultraviolet device, it is necessary to adopt a wider bandgap material than AlGaN material. The current-voltage characteristics under reverse bias were measured in darkness and under UV illumination. The distribution of dark current and response of different devices was obtained. In short, for GaN-based UV avalanche photodiode, dark current was related to high density dislocation of

  17. Auroral streamers: characteristics of associated precipitation,convection and field-aligned currents

    Directory of Open Access Journals (Sweden)

    V. A. Sergeev

    2004-01-01

    Full Text Available During the long-duration steady convection activity on 11 December 1998, the development of a few dozen auroral streamers was monitored by Polar UVI instrument in the dark northern nightside ionosphere. On many occasions the DMSP spacecraft crossed the streamer-conjugate regions over the sunlit southern auroral oval, permitting the investigation of the characteristics of ion and electron precipitation, ionospheric convection and field-aligned currents associated with the streamers. We confirm the conjugacy of streamer-associated precipitation, as well as their association with ionospheric plasma streams having a substantial equatorward convection component. The observations display two basic types of streamer-associated precipitation. In its polewardmost half, the streamer-associated (field-aligned accelerated electron precipitation coincides with the strong (≥2–7μA/m2 upward field-aligned currents on the westward flank of the convection stream, sometimes accompanied by enhanced proton precipitation in the adjacent region. In the equatorward portion of the streamer, the enhanced precipitation includes both electrons and protons, often without indication of field-aligned acceleration. Most of these characteristics are consistent with the model describing the generation of the streamer by the narrow plasma bubbles (bursty bulk flows which are contained on dipolarized field lines in the plasma sheet, although the mapping is strongly distorted which makes it difficult to quantitatively interprete the ionospheric image. The convective streams in the ionosphere, when well-resolved, had the maximal convection speeds ∼0.5–1km/s, total field-aligned currents of a few tenths of MA, thicknesses of a few hundreds km and a potential drop of a few kV across the stream. However, this might represent only a small part of the associated flux transport in the equatorial plasma sheet.

    Key words. Ionosphere (electric fiels and

  18. Suppression of optical field leakage to GaN substrate in GaN-based green laser diode

    Science.gov (United States)

    Liang, Feng; Zhao, Degang; Jiang, Desheng; Liu, Zongshun; Zhu, Jianjun; Chen, Ping; Yang, Jing; Liu, Wei; Li, Xiang; Liu, Shuangtao; Xing, Yao; Zhang, Liqun; Long, Heng; Zhang, Jian

    2017-02-01

    In this study, n-InGaN and u-InGaN are proposed to be the lower waveguide (LWG) and quantum barrier (QB), respectively, to eliminate the leakage of optical field to GaN substrate in GaN-based green laser diode (LD). The optical and electrical characteristics of LDs are calculated by the economic software LASTIP, and it is found that the leakage of optical field is suppressed significantly and the threshold current is also reduced. Further theoretical analysis shows that n-In0.08Ga0.92N LWG and u-In0.02Ga0.98N QB is effective to concentrate the optical field and to enhance optical confinement for our green LDs, leading to an improvement of optical and electrical performance of green LDs.

  19. Current-voltage characteristics in macroporous silicon/SiOx/SnO2:F heterojunctions.

    Science.gov (United States)

    Garcés, Felipe A; Urteaga, Raul; Acquaroli, Leandro N; Koropecki, Roberto R; Arce, Roberto D

    2012-07-25

    We study the electrical characteristics of macroporous silicon/transparent conductor oxide junctions obtained by the deposition of fluorine doped-SnO2 onto macroporous silicon thin films using the spray pyrolysis technique. Macroporous silicon was prepared by the electrochemical anodization of a silicon wafer to produce pore sizes ranging between 0.9 to 1.2 μm in diameter. Scanning electronic microscopy was performed to confirm the pore filling and surface coverage. The transport of charge carriers through the interface was studied by measuring the current-voltage curves in the dark and under illumination. In the best configuration, we obtain a modest open-circuit voltage of about 70 mV and a short-circuit current of 3.5 mA/cm2 at an illumination of 110 mW/cm2. In order to analyze the effects of the illumination on the electrical properties of the junction, we proposed a model of two opposing diodes, each one associated with an independent current source. We obtain a good accordance between the experimental data and the model. The current-voltage curves in illuminated conditions are well fitted with the same parameters obtained in the dark where only the photocurrent intensities in the diodes are free parameters.

  20. Reliability and Characteristics of Wafer-Level Chip-Scale Packages under Current Stress

    Science.gov (United States)

    Chen, Po-Ying; Kung, Heng-Yu; Lai, Yi-Shao; Hsiung Tsai, Ming; Yeh, Wen-Kuan

    2008-02-01

    In this work, we present a novel approach and method for elucidating the characteristics of wafer-level chip-scale packages (WLCSPs) for electromigration (EM) tests. The die in WLCSP was directly attached to the substrate via a soldered interconnect. The shrinking of the area of the die that is available for power, and the solder bump also shrinks the volume and increases the density of electrons for interconnect efficiency. The bump current density now approaches to 106 A/cm2, at which point the EM becomes a significant reliability issue. As known, the EM failure depends on numerous factors, including the working temperature and the under bump metallization (UBM) thickness. A new interconnection geometry is adopted extensively with moderate success in overcoming larger mismatches between the displacements of components during current and temperature changes. Both environments and testing parameters for WLCSP are increasingly demanded. Although failure mechanisms are considered to have been eliminated or at least made manageable, new package technologies are again challenging its process, integrity and reliability. WLCSP technology was developed to eliminate the need for encapsulation to ensure compatibility with smart-mount technology (SMT). The package has good handing properties but is now facing serious reliability problems. In this work, we investigated the reliability of a WLCSP subjected to different accelerated current stressing conditions at a fixed ambient temperature of 125 °C. A very strong correlation exists between the mean time to failure (MTTF) of the WLCSP test vehicle and the mean current density that is carried by a solder joint. A series of current densities were applied to the WLCSP architecture; Black's power law was employed in a failure mode simulation. Additionally, scanning electron microscopy (SEM) was adopted to determine the differences existing between high- and low-current-density failure modes.

  1. A high performance InAlN/GaN HEMT with low Ron and gate leakage

    Science.gov (United States)

    Chunlei, Ma; Guodong, Gu; Yuanjie, Lü

    2016-02-01

    InAlN/GaN high-electron mobility transistors (HEMTs) with a gate length of 100 nm and oxygen plasma treatment were fabricated. A Si/Ti/Al/Ni/Au ohmic contact was also used to reduce the contact resistance. DC and RF characteristics of the devices were measured. The fabricated devices show a maximum drain current density of 2.18 A/mm at VGS = 2 V, a low on-resistance (Ron) of 1.49 ω·mm and low gate leakage current. An excellent frequency response was also obtained. The current cut-off frequency (fT) is 81 GHz and the maximum oscillation frequency is 138 GHz, respectively. Project supported by the National Natural Science Foundation of China (No. 61306113).

  2. Estimation of leakage power and delay in CMOS circuits using parametric variation

    Directory of Open Access Journals (Sweden)

    Preeti Verma

    2016-09-01

    Full Text Available With the advent of deep-submicron technologies, leakage power dissipation is a major concern for scaling down portable devices that have burst-mode type integrated circuits. In this paper leakage reduction technique HTLCT (High Threshold Leakage Control Transistor is discussed. Using high threshold transistors at the place of low threshold leakage control transistors, result in more leakage power reduction as compared to LCT (leakage control transistor technique but at the scarifies of area and delay. Further, analysis of effect of parametric variation on leakage current and propagation delay in CMOS circuits is performed. It is found that the leakage power dissipation increases with increasing temperature, supply voltage and aspect ratio. However, opposite pattern is noticed for the propagation delay. Leakage power dissipation for LCT NAND gate increases up to 14.32%, 6.43% and 36.21% and delay decreases by 22.5%, 42% and 9% for variation of temperature, supply voltage and aspect ratio. Maximum peak of equivalent output noise is obtained as 127.531 nV/Sqrt(Hz at 400 mHz.

  3. Solar Cell Parameters Extraction from a Current-Voltage Characteristic Using Genetic Algorithm

    Directory of Open Access Journals (Sweden)

    Sanjaykumar J. Patel

    2013-05-01

    Full Text Available The determination of solar cell parameters is very important for the evaluation of the cell performance as well as to extract maximum possible output power from the cell. In this paper, we propose a computational based binary-coded genetic algorithm (GA to extract the parameters (I0, Iph and n for a single diode model of solar cell from its current-voltage (I-V characteristic. The algorithm was implemented using LabVIEW as a programming tool and validated by applying it to the I-V curve synthesized from the literature using reported values. The values of parameters obtained by GA are in good agreement with those of the reported values for silicon and plastic solar cells. change to “After the validation of the program, it was used to extract parameters for an experimental I-V characteristic of 4 × 4 cm2 polycrystalline silicon solar cell measured under 900 W/m. The I-V characteristic obtained using GA shows excellent match with the experimental one.

  4. LEAKAGE OF COLONIC ANASTOMOSIS AFTER COLON RESECTION

    Institute of Scientific and Technical Information of China (English)

    Kanellos I; Pramateftakis MG

    2004-01-01

    Objective To present the diagnosis and management of anastomotic leakage after colon resection. Methods Early diagnosis and urgent therapeutic intervention are required in order to avert life-threatening conditions that may be caused by anastomotic leakage. Results The diagnosis of anastomotic leakage is based on clinical features, peripheral blood investigations and abdominal computed tomography (CT) scan. Major leaks are defined by symptoms of peritonitis and septicaemia due to leakage. Major leaks should be managed operatively. Minor leaks can be managed conservatively with successful outcomes. Conclusion Leakage of colonic anastomosis remains the most serious complication after colon resection. It is a major cause of postoperative morbidity and mortality. A high index of suspicion is required in order to detect early, nonspecific signs of a leakage and urgent surgical intervention is usually required to avert life-threatening events.

  5. Characteristics of the Nonselective Cation Current (NSCCs) in Rabbit Left Ventricular Epicardial, Midmyocardial and Endocardial Myocytes

    Institute of Scientific and Technical Information of China (English)

    Min Zong; Xinchun Yang; Xiulan Liu; Liang Shi; Taifeng Liu

    2007-01-01

    Recent studies have described regional differences in the electrophysiology and pharmacology of ventricular myocardium in canine,feline,rat,guinea pig,and human hearts.This has been shown to be due to a smaller IKs and a lager sodium-calcium exchange current (INa-Ca ) and late INa in M region (deep subepicardial to midmyocardial).Studies from our laboratory have found a new repolarization current-nonselective cation current (NSCCs) existing in rabbit right ventricular myocytes.Methods We examined the characteristics of NSCCs in epicardial,M region,and endocardial cells isolated from the rabbit left ventricle with standard microelectrode and whole-cell patch-clamp techniques.The permeability to Na+,K + ,Li + ,Cs + but not to Cl-indicating that it was a nonselective cation current.Gd3+ (0.1 mmol/1) and La3+ (0.1 mmol/1) can block the current markedly.Results Further characterization of NSCCs was significantly smaller in M cells than in epicardial and endocardial cells.NSCCs current density was significantly smaller in M cells than in epicardial and endocardial cells.With repolarization to-80 mV,INs current density was (-0.44 ±0.05) PA/PF in endocardial cells,(-0.12 ±0.05) PA/PF in M cells and (-0.28 ±0.07) PA/PF in epicardial cells;and with repolarization to + 30 mV,INs current density was ( 1.09 ± 0.29) PA/PF in endocardial cells,(0.38 ± 0.09) PA/PF in M cells and (0.91 ± 0.32) PA/PF in epicardial cells.Conclusions Transmural dispersion of repolarization was due to the heterogeneity of NSCCs in rabbit left ventricle epicardial,endocardial myocytes and M cells.These findings may advance our understanding of the ionic basis for our understanding of factors contributing to the development of cardiac arrhythmias.

  6. Modelling of Chirality-Dependent Current-Voltage Characteristics of Carbon-Nanotube Field-Effect Transistors

    Institute of Scientific and Technical Information of China (English)

    ZHAO Xu; WANG Yan; YU Zhi-Ping

    2006-01-01

    @@ Current-voltage characteristics of ballistic carbon-nanotube field-effect transistors are characterized with an it-erative simulation program. The influence of carbon-nanotube chirality and diameter on the output current is considered. An analytical current-voltage expression under the quantum capacitance limit and low-voltage application is derived. Our simulation results are compared with actual measurement data.

  7. Energy Conservation Through Duct Leakage Reduction

    Science.gov (United States)

    2004-02-26

    Energy Conservation Through Duct Leakage Reduction February 26, 2004 Rich Glatt – Lindab Inc. Report Documentation Page Form ApprovedOMB No. 0704...4. TITLE AND SUBTITLE Energy Conservation Through Duct Leakage Reduction 5a. CONTRACT NUMBER 5b. GRANT NUMBER 5c. PROGRAM ELEMENT NUMBER 6...Wall – DW that installs like SW - easiest installing DW system on the market – Eliminates the need for costly flanged connections – SMACNA Leakage

  8. Seasonal to interannual variability of water mass characteristics and currents on the Namibian shelf

    Science.gov (United States)

    Junker, Tim; Mohrholz, Volker; Siegfried, Lydia; van der Plas, Anja

    2017-01-01

    We present long-term current meter records from the Benguela system together with salinity and temperature observations gathered by a mooring on the Namibian shelf across 13 years (2002-2015). From this unique data set a climatological mean state is estimated enabling us to investigate seasonal to interannual variations of these variables on the Namibian shelf. The present study highlights the importance of the alongshore advection for the water mass characteristics in the Benguela system on a seasonal time scale. The annual cycle of the alongshore transport is characterized by a biannual flow reversal. Poleward directed currents dominate from October to April, and from May to September equatorward currents prevail. In addition, we present observational evidence for a biannual intrusion of tropical waters into the Benguela system with maxima in October and February. Based on the in situ temperature data, several anomalous events are described that affect the whole water column. During the outstanding warm event in austral fall 2011 the monthly temperature anomaly exceeds one Kelvin for five consecutive months peaking in March (2.4 K) in the upper layer of the water column. Our study suggests, that the occurrence of such extreme temperature events in the Benguela upwelling system is closely related to the strength of the alongshore advection in austral summer.

  9. Practical Leakage-Resilient Symmetric Cryptography

    DEFF Research Database (Denmark)

    Faust, Sebastian; Pietrzak, Krzysztof; Schipper, Joachim

    2012-01-01

    -adaptively. For example, we show that a three round Feistel network instantiated with a leakage resilient PRF yields a leakage resilient PRP if the inputs are chosen non-adaptively (This complements the result of Dodis and Pietrzak [CRYPTO’10] who show that if a adaptive queries are allowed, a superlogarithmic number...... of rounds is necessary.) We also show that a minor variation of the classical GGM construction gives a leakage resilient PRF if both, the leakage-function and the inputs, are chosen non-adaptively...

  10. Improving stopping construction to minimize leakage.

    Science.gov (United States)

    Grau, Roy H; Mazzella, Andrew L; Martikainen, Anu L

    2012-07-01

    The proper sealing of stoppings is an important step in reducing leakage from the intake to the return airways. Leakage and the subsequent loss of ventilation resulting from improperly sealed stoppings can lead to unhealthy and unsafe working conditions. The research presented in this paper investigates the total leakage of a stopping, including air leakage through the stopping, at the stopping perimeter, and through the coalbed. The study also examines sealing considerations for stoppings that are constructed under roof control screen, the effects that wooden wedges had on inhibiting efficient application of polyurethane foam sealant, and airflow leakage through the surrounding coal. The work involved building a stopping in a dead end room of the NIOSH Safety Research Coal Mine and then pressurising the room using compressed air. Stopping leakage was evaluated by measuring air pressure loss in the enclosed room due to the air leakage. Part of the research utilises a diluted soap solution that was applied to the stopping and the surrounding coal to detect air leakage signified by bubble formations. The results show that stopping leakage can be minimised with proper sealing.

  11. Analyzing a database of residential air leakage in the United States

    Science.gov (United States)

    Chan, Wanyu R.; Nazaroff, William W.; Price, Phillip N.; Sohn, Michael D.; Gadgil, Ashok J.

    We analyzed more than 70,000 air leakage measurements in houses across the United States to relate leakage area—the effective size of all penetrations of the building shell—to readily available building characteristics such as building size, year built, geographic region, and various construction characteristics. After adjusting for the lack of statistical representativeness of the data, we found that the distribution of leakage area normalized by floor area is approximately lognormal. Based on a classification tree analysis, year built and floor area are the two most significant predictors of leakage area: older and smaller houses tend to have higher normalized leakage areas than newer and larger ones. Multivariate regressions of normalized leakage are presented with respect to these two factors for three house classifications: low-income households, energy program houses, and conventional houses. We demonstrate a method of applying the regression model to housing characteristics from the American Housing Survey to derive a leakage-area distribution for all single-family houses in the US. The air exchange rates implied by these estimates agree reasonably well with published measurements.

  12. Current characteristics associated with hereditary angioedema attacks and treatment: the home infusion based patient experience.

    Science.gov (United States)

    Tachdjian, Raffi; Banerji, Aleena; Guyer, Autumn; Morphew, Tricia

    2015-01-01

    This article presents a current perspective on the characteristics of hereditary angioedema (HAE) attacks and treatment as captured by a home infusion service. Retrospective data on 158 HAE patients who were enrolled in this acute treatment program were analyzed for factors surrounding an attack. The majority of patients had a high level of disease severity at baseline (88%), with a higher than expected likelihood of having a positive family history (87.8%). The most likely times for patients to call for home treatment were just before and during working hours (6:00 A.M.-5:00 P.M.). Eighty-three percent had more than one alternate mode of medication. Factors associated with a severe attack included an overall severe rating of HAE attacks in the previous year, an abdominal attack alone or a combination of peripheral and abdominal attacks versus a peripheral attack alone, and the use of two doses rather than one for treatment of the current attack. Average time to relief onset was 43.5 minutes. One dose of ecallantide was sufficient to treat the majority of attacks, and a second dose was needed in 23.6% of patients experiencing a severe attack. However, patients who reported both a severe attack rating during the previous year and experiencing only a peripheral current attack were more likely to experience a severe current attack. Acute treatment paradigms for HAE remain diverse. Understanding factors driving these decisions could help alleviate the overall burden of this disease and help overcome some of the challenges faced by the patients and their caretakers and improve their quality of life. Enhanced capture and analysis of prodromal factors in future studies should help us further alleviate the burden of this disease.

  13. Characteristics of the cold-water belt formed off Soya Warm Current

    Science.gov (United States)

    Ishizu, Miho; Kitade, Yujiro; Matsuyama, Masaji

    2008-12-01

    We examined the data obtained by acoustic Doppler current profiler, conductivity-temperature-depth profiler, and expendable bathythermograph observations, which were collected in the summers of 2000, 2001, and 2002, to clarify the characteristics of the cold-water belt (CWB), i.e., lower-temperature water than the surrounding water extending from the southwest coast of Sakhalin along the offshore side of Soya Warm Current (SWC) and to confirm one of the formation mechanisms of the CWB as suggested by our previous study, i.e., the upwelling due to the convergence of bottom Ekman transport off the SWC region. The CWB was observed at about 30 km off the coast, having a thickness of 14 m and a minimum temperature of 12°C at the sea surface. The CWB does not have the specific water mass, but is constituted of three representative water types off the northeast coast of Hokkaido in summer, i.e., SWC water, Fresh Surface Okhotsk Sea Water, and Okhotsk Sea Intermediate Water. In a comparison of the horizontal distributions of current and temperature, the CWB region is found to be advected to the southeast at an average of 40 ± 29% of the maximum current velocity of the SWC. The pumping speed due to the convergence of the bottom Ekman transport is estimated as (1.5-3.0) × 10-4 m s-1. We examined the mixing ratio of the CWB, and the results implied that the water mass of the CWB is advected southeastward and mixes with a water mass upwelling in a different region off SWC.

  14. On the Current and Future Dry Spell Characteristics over Africa

    Directory of Open Access Journals (Sweden)

    Bessam Bouagila

    2013-09-01

    Full Text Available Changes in precipitation frequency and intensity distribution over Africa will have a direct impact on dry spells and, therefore, will affect various climate sensitive sectors. In this study, the ability of the fifth generation of the Canadian Regional Climate Model (CRCM5 in simulating annual and seasonal dry spell characteristics is assessed for four precipitation thresholds (0.5 mm, 1 mm, 2 mm and 3 mm over Africa. The dry spell characteristics considered are the number of dry days, number of dry spells and five-year return levels of maximum dry spell durations. The performance errors are assessed by comparing ERA-Interim driven CRCM5 with the Global Precipitation Climatology Project (GPCP dataset, for the common 1997–2008 period. Lateral boundary forcing errors, i.e., errors in the CRCM5 simulation created by errors in the driving Canadian Earth System model (CanESM2 data—as well as the added value—of CRCM5 over CanESM2 are also assessed for the current climate. This is followed by an assessment of projected changes to dry spell characteristics for two future climates (2041–2070 and 2071–2100 simulated by both CRCM5 driven by CanESM2 and CanESM2 itself, for Representative Concentration Pathway (RCP 4.5. Results suggest that CRCM5 driven by ERA-Interim has a tendency to overestimate the annual mean number of dry days and the five-year return level of the maximum dry spell duration in a majority of the regions while it slightly underestimates the number of dry spells. In general, the CRCM5 performance errors associated with the annual and seasonal dry spell characteristics are found to be larger in magnitude compared to the lateral boundary forcing errors. Projected changes to the dry spell characteristics for the 2041–2070 and 2071–2100 periods, with respect to the 1981–2010 period suggests significant changes in the tropics, with the mean number of dry days and the five-year return levels of maximum dry spell duration

  15. Characteristics of gifted and talented student: the current situation in Portugal

    Directory of Open Access Journals (Sweden)

    Leandro Almeida

    2010-04-01

    Full Text Available This article presents the current situation in Portugal with regard to high capability and talented students, focusing on the authors’ experience in the National Association for Study and Intervention in Giftedness (ANEIS. In a sequential argument, we focus on the concept of giftedness, the most specific characteristics of high ability students, and the procedures used in their initial identification and assessment. Also, the most frequent educational responses to these students are described. Finally, we underline some studies conducted as a result of the collaboration between ANEIS and several Portuguese universities. These studies refer to the instruments and procedures used for the assessment of giftedness and talent, and the impact of the implemented educational measures.

  16. Current-voltage characteristics and transition voltage spectroscopy of individual redox proteins.

    Science.gov (United States)

    Artés, Juan M; López-Martínez, Montserrat; Giraudet, Arnaud; Díez-Pérez, Ismael; Sanz, Fausto; Gorostiza, Pau

    2012-12-19

    Understanding how molecular conductance depends on voltage is essential for characterizing molecular electronics devices. We reproducibly measured current-voltage characteristics of individual redox-active proteins by scanning tunneling microscopy under potentiostatic control in both tunneling and wired configurations. From these results, transition voltage spectroscopy (TVS) data for individual redox molecules can be calculated and analyzed statistically, adding a new dimension to conductance measurements. The transition voltage (TV) is discussed in terms of the two-step electron transfer (ET) mechanism. Azurin displays the lowest TV measured to date (0.4 V), consistent with the previously reported distance decay factor. This low TV may be advantageous for fabricating and operating molecular electronic devices for different applications. Our measurements show that TVS is a helpful tool for single-molecule ET measurements and suggest a mechanism for gating of ET between partner redox proteins.

  17. Biliary leakage after urgent cholecystectomy: Optimizationof endoscopic treatment

    Institute of Scientific and Technical Information of China (English)

    2015-01-01

    AIM To investigate the results of endoscopic treatmentof postoperative biliary leakage occurring after urgentcholecystectomy with a long-term follow-up.METHODS: This is an observational database studyconducted in a tertiary care center. All consecutivepatientswho underwent endoscopic retrograde cholangiography(ERC) for presumed postoperative biliaryleakage after urgent cholecystectomy in the periodbetween April 2008 and April 2013 were consideredfor this study. Patients with bile duct transection andbiliary strictures were excluded. Biliary leakage wassuspected in the case of bile appearance from eitherpercutaneous drainage of abdominal collection orabdominal drain placed at the time of cholecystectomy.Procedural and main clinical characteristics of allconsecutive patients with postoperative biliary leakageafter urgent cholecystectomy, such as indication forcholecystectomy, etiology and type of leakage, ERCfindings and post-ERC complications, were collectedfrom our electronic database. All patients in whomthe leakage was successfully treated endoscopicallywere followed-up after they were discharged from thehospital and the main clinical characteristics, laboratorydata and common bile duct diameter were electronicallyrecorded.RESULTS: During a five-year period, biliary leakagewas recognized in 2.2% of patients who underwenturgent cholecystectomy. The median time fromcholecystectomy to ERC was 6 d (interquartile range,4-11 d). Endoscopic interventions to manage biliaryleakage included biliary stent insertion with or withoutbiliary sphincterotomy. In 23 (77%) patients after firstendoscopic treatment bile flow through existing surgicaldrain ceased within 11 d following biliary therapeuticendoscopy (median, 4 d; interquartile range, 2-8 d).In those patients repeat ERC was not performed and the biliary stent was removed on gastroscopy. In seven(23%) patients repeat ERC was done within one tofourth week after their first ERC, depending on theextent

  18. Current-voltage characteristics of individual conducting polymer nanotubes and nanowires

    Institute of Scientific and Technical Information of China (English)

    Long Yun-ze; Yin Zhi-Hua; Li Meng-Meng; Gu Chang-Zhi; Duvail Jean-Luc; Jin Ai-zi; Wan Mei-xiang

    2009-01-01

    We report the current-voltage (Ⅰ-Ⅴ) characteristics of individual polypyrrole nanotubes and poly(3,4-ethylenedioxythiophene) (PEDOT) nanowires in a temperature range from 300 K to 2 K. Considering the complex structures of such quasi-one-dimensional systems with an array of ordered conductive regions separated by disordered barriers, we use the extended fluctuation-induced tunneling (FIT) and thermal excitation model (Kaiser expression) to fit the temperature and electric-field dependent Ⅰ-Ⅴ curves. It is found that the Ⅰ-Ⅴ data measured at higher temperatures or higher voltages can be well fitted by the Kaiser expression. However, the low-temperature data around the zero bias clearly deviate from those obtained from this model. The deviation (or zero-bias conductance suppression)could be possibly ascribed to the occurrence of the Coulomb-gap in the density of states near the Femi level and/or the enhancement of electron-electron interaction resulting from nanosize effects, which have been revealed in the previous studies on low-temperature electronic transport in conducting polymer films, pellets and nanostructures. In addition,similar Ⅰ-Ⅴ characteristics and deviation are also observed in an isolated K0.27MnO2 nanowire.

  19. Estimating leakage from forest carbon sequestration programs

    Energy Technology Data Exchange (ETDEWEB)

    Murray, B.C. [RTI International, Research Triangle Park, NC (United States); McCarl, B.A. [Texas A and M Univ., College Station, TX (United States). Dept. of Agricultural Economics; Lee, H.C. [Western Ontario Univ., London, ON (Canada). Dept. of Economics

    2003-03-01

    Nearly half of all terrestrial carbon is stored in forest ecosystems. Land use changes such as deforestation were responsible for nearly 20 per cent of carbon dioxide (CO{sub 2}) released in the atmosphere worldwide between 1989 to 1998. This paper developed an estimation procedure that addressed the magnitude of potential leakage from carbon sequestration projects in the forest sector, including the conversion of land from agriculture to forest. Leakage occurs when a program's direct carbon benefits are undermined by carbon releases elsewhere. Leakage directly undermines greenhouse gas (GHG) emission reducing actions and should be considered when designing and evaluating policies. Leakage should be deducted from the carbon credits granted to mitigation projects, and accounting rules and guidelines for crediting carbon sequestration projects. Analytic, econometric, and sector-level optimization models were combined to estimate leakage from different forest carbon sequestration activities. The FASOM forest and agricultural sector model was used to investigate empirical leakage consequences in 4 categories: forest setasides, avoided deforestation, afforestation, and a combination of afforestation and avoided deforestation. The interaction of market forces that cause leakage from forest sector projects was investigated. Results suggested that leakage from geographically targeted mitigation projects can be sizeable. For small projects, leakage tends to be larger in proportion to direct project benefits than larger programs or policies. It was suggested that if leakage is more pronounced in forest carbon projects than energy sector projects, this could affect the terms of trade for the credits generated by different sources and thereby affect the optimal portfolio of mitigation options. It was concluded that policy designers and market makers should account for leakage effects when enabling exchanges of GHG offsets.

  20. Forest Carbon Leakage Quantification Methods and Their Suitability for Assessing Leakage in REDD

    Directory of Open Access Journals (Sweden)

    Sabine Henders

    2012-01-01

    Full Text Available This paper assesses quantification methods for carbon leakage from forestry activities for their suitability in leakage accounting in a future Reducing Emissions from Deforestation and Forest Degradation (REDD mechanism. To that end, we first conducted a literature review to identify specific pre-requisites for leakage assessment in REDD. We then analyzed a total of 34 quantification methods for leakage emissions from the Clean Development Mechanism (CDM, the Verified Carbon Standard (VCS, the Climate Action Reserve (CAR, the CarbonFix Standard (CFS, and from scientific literature sources. We screened these methods for the leakage aspects they address in terms of leakage type, tools used for quantification and the geographical scale covered. Results show that leakage methods can be grouped into nine main methodological approaches, six of which could fulfill the recommended REDD leakage requirements if approaches for primary and secondary leakage are combined. The majority of methods assessed, address either primary or secondary leakage; the former mostly on a local or regional and the latter on national scale. The VCS is found to be the only carbon accounting standard at present to fulfill all leakage quantification requisites in REDD. However, a lack of accounting methods was identified for international leakage, which was addressed by only two methods, both from scientific literature.

  1. Effects of substrate leakage and drain-side thermal barriers in In0.53Ga0.47As/GaAs0.5Sb0.5 quantum-well tunneling field-effect transistors

    Science.gov (United States)

    Yu, Tao; Teherani, James T.; Antoniadis, Dimitri A.; Hoyt, Judy L.

    2014-09-01

    The device leakage current and the ON-state characteristics of In0.53Ga0.47As/GaAs0.5Sb0.5 quantum-well tunneling field-effect transistors (QWTFETs) are examined on the basis of temperature-dependent measurements. Different from commonly observed Shockley-Reed-Hall (SRH) recombination in the OFF-state, substrate leakage is identified as the source of OFF-current, which limits the steepness of the device transfer characteristics. In addition, analysis of the TFET operation in the linear regime reveals a current barrier due to an ungated region near the drain, which accounts for the unexpected parasitic resistance and current saturation at low temperatures. This barrier can be eliminated by reducing the gate-to-drain distance, as illustrated by device simulations. The applied methodology provides a design guideline for the gate-to-drain alignment tolerance in TFETs.

  2. Morphology and current-voltage characteristics of nanostructured pentacene thin films probed by atomic force microscopy.

    Science.gov (United States)

    Zorba, S; Le, Q T; Watkins, N J; Yan, L; Gao, Y

    2001-09-01

    Atomic force microscopy was used to study the growth modes (on SiO2, MoS2, and Au substrates) and the current-voltage (I-V) characteristics of organic semiconductor pentacene. Pentacene films grow on SiO2 substrate in a layer-by-layer manner with full coverage at an average thickness of 20 A and have the highest degree of molecular ordering with large dendritic grains among the pentacene films deposited on the three different substrates. Films grown on MoS2 substrate reveal two different growth modes, snowflake-like growth and granular growth, both of which seem to compete with each other. On the other hand, films deposited on Au substrate show granular structure for thinner coverages (no crystal structure) and dendritic growth for higher coverages (crystal structure). I-V measurements were performed with a platinum tip on a pentacene film deposited on a Au substrate. The I-V curves on pentacene film reveal symmetric tunneling type character. The field dependence of the current indicates that the main transport mechanism at high field intensities is hopping (Poole-Frenkel effect). From these measurements, we have estimated a field lowering coefficient of 9.77 x 10(-6) V-1/2 m1/2 and an ideality factor of 18 for pentacene.

  3. Influence of coupling parameter on current-voltage characteristics of intrinsic Josephson junctions in high-T {sub c} superconductors

    Energy Technology Data Exchange (ETDEWEB)

    Shukrinov, Yu.M. [BLTP, JINR, Moscow Region, Dubna 141980 (Russian Federation) and Physical Technical Institute, Dushanbe 734063 (Tajikistan)]. E-mail: shukrinv@theor.jinr.ru; Mahfouzi, F. [Institute for Advanced Studies in Basic Sciences, P.O. Box 45195-1159, Zanjan (Iran, Islamic Republic of)

    2006-02-01

    We study the current-voltage characteristics of intrinsic Josephson junctions in high-T {sub c} superconductors by numerical calculations and in framework of capacitively coupled Josephson junctions model we obtain the total number of branches. The influence of the coupling parameter {alpha} on the current-voltage characteristics at fixed parameter {beta} ({beta} {sup 2} 1/{beta} {sub c}, where {beta} {sub c} is McCumber parameter) and the influence of {alpha} on {beta}-dependence of the current-voltage characteristics are investigated. We obtain the {alpha}-dependence of the branch's slopes and branch's endpoints. The presented results show new features of the coupling effect on the scheme of hysteresis jumps in current-voltage characteristics of intrinsic Josephson junctions in high-T {sub c} superconductors.

  4. Influence of coupling parameter on current-voltage characteristics of intrinsic Josephson junctions in high- Tc superconductors

    Science.gov (United States)

    Shukrinov, Yu. M.; Mahfouzi, F.

    2006-02-01

    We study the current-voltage characteristics of intrinsic Josephson junctions in high-Tc superconductors by numerical calculations and in framework of capacitively coupled Josephson junctions model we obtain the total number of branches. The influence of the coupling parameter α on the current-voltage characteristics at fixed parameter β (β2 = 1/βc, where βc is McCumber parameter) and the influence of α on β-dependence of the current-voltage characteristics are investigated. We obtain the α-dependence of the branch's slopes and branch's endpoints. The presented results show new features of the coupling effect on the scheme of hysteresis jumps in current-voltage characteristics of intrinsic Josephson junctions in high-Tc superconductors.

  5. Quantifying Information Leakage of Randomized Protocols

    DEFF Research Database (Denmark)

    Biondi, Fabrizio; Wasowski, Andrzej; Legay, Axel

    2013-01-01

    The quantification of information leakage provides a quantitative evaluation of the security of a system. We propose the usage of Markovian processes to model and analyze the information leakage of deterministic and probabilistic systems. We show that this method generalizes the lattice of inform...... and non-timed attacks on the Onion Routing protocol....

  6. Predicting Envelope Leakage in Attached Dwellings

    Energy Technology Data Exchange (ETDEWEB)

    Faakye, O.; Arena, L.; Griffiths, D.

    2013-07-01

    The most common method for measuring air leakage is to use a single blower door to pressurize and/or depressurize the test unit. In detached housing, the test unit is the entire home and the single blower door measures air leakage to the outside. In attached housing, this 'single unit', 'total', or 'solo' test method measures both the air leakage between adjacent units through common surfaces as well air leakage to the outside. Measuring and minimizing this total leakage is recommended to avoid indoor air quality issues between units, reduce energy losses to the outside, reduce pressure differentials between units, and control stack effect. However, two significant limitations of the total leakage measurement in attached housing are: for retrofit work, if total leakage is assumed to be all to the outside, the energy benefits of air sealing can be significantly over predicted; for new construction, the total leakage values may result in failing to meet an energy-based house tightness program criterion. The scope of this research is to investigate an approach for developing a viable simplified algorithm that can be used by contractors to assess energy efficiency program qualification and/or compliance based upon solo test results.

  7. Radiofrequency radiation leakage from microwave ovens.

    Science.gov (United States)

    Lahham, Adnan; Sharabati, Afifeh

    2013-12-01

    This work presents data on the amount of radiation leakage from 117 microwave ovens in domestic and restaurant use in the West Bank, Palestine. The study of leakage is based on the measurements of radiation emissions from the oven in real-life conditions by using a frequency selective field strength measuring system. The power density from individual ovens was measured at a distance of 1 m and at the height of centre of door screen. The tested ovens were of different types, models with operating powers between 1000 and 1600 W and ages ranging from 1 month to >20 y, including 16 ovens with unknown ages. The amount of radiation leakage at a distance of 1 m was found to vary from 0.43 to 16.4 μW cm(-2) with an average value equalling 3.64 μW cm(-2). Leakages from all tested microwave ovens except for seven ovens (∼6 % of the total) were below 10 μW cm(-2). The highest radiation leakage from any tested oven was ∼16.4 μW cm(-2), and found in two cases only. In no case did the leakage exceed the limit of 1 mW cm(-2) recommended by the ICNIRP for 2.45-GHz radiofrequency. This study confirms a linear correlation between the amount of leakage and both oven age and operating power, with a stronger dependence of leakage on age.

  8. Leakage-resilient cryptography from minimal assumptions

    DEFF Research Database (Denmark)

    Hazay, Carmit; López-Alt, Adriana; Wee, Hoeteck;

    2013-01-01

    We present new constructions of leakage-resilient cryptosystems, which remain provably secure even if the attacker learns some arbitrary partial information about their internal secret key. For any polynomial ℓ, we can instantiate these schemes so as to tolerate up to ℓ bits of leakage. While the...

  9. Markovian Processes for Quantitative Information Leakage

    DEFF Research Database (Denmark)

    Biondi, Fabrizio

    and randomized processes with Markovian models and to compute their information leakage for a very general model of attacker. We present the QUAIL tool that automates such analysis and is able to compute the information leakage of an imperative WHILE language. Finally, we show how to use QUAIL to analyze some...

  10. VISUAL INSPECTION OF WATER LEAKAGE FROM GROUND PENETRATING RADAR RADARGRAM

    Directory of Open Access Journals (Sweden)

    N. N. Halimshah

    2015-10-01

    Full Text Available Water loss in town and suburban is currently a significant issue which reflect the performance of water supply management in Malaysia. Consequently, water supply distribution system has to be maintained in order to prevent shortage of water supply in an area. Various techniques for detecting a mains water leaks are available but mostly are time-consuming, disruptive and expensive. In this paper, the potential of Ground Penetrating Radar (GPR as a non-destructive method to correctly and efficiently detect mains water leaks has been examined. Several experiments were designed and conducted to prove that GPR can be used as tool for water leakage detection. These include instrument validation test and soil compaction test to clarify the maximum dry density (MDD of soil and simulation studies on water leakage at a test bed consisting of PVC pipe burying in sand to a depth of 40 cm. Data from GPR detection are processed using the Reflex 2D software. Identification of water leakage was visually inspected from the anomalies in the radargram based on GPR reflection coefficients. The results have ascertained the capability and effectiveness of the GPR in detecting water leakage which could help avoiding difficulties with other leak detection methods.

  11. Leakage-Resilient Circuits without Computational Assumptions

    DEFF Research Database (Denmark)

    Dziembowski, Stefan; Faust, Sebastian

    2012-01-01

    Physical cryptographic devices inadvertently leak information through numerous side-channels. Such leakage is exploited by so-called side-channel attacks, which often allow for a complete security breache. A recent trend in cryptography is to propose formal models to incorporate leakage into the ......Physical cryptographic devices inadvertently leak information through numerous side-channels. Such leakage is exploited by so-called side-channel attacks, which often allow for a complete security breache. A recent trend in cryptography is to propose formal models to incorporate leakage...... into the model and to construct schemes that are provably secure within them. We design a general compiler that transforms any cryptographic scheme, e.g., a block-cipher, into a functionally equivalent scheme which is resilient to any continual leakage provided that the following three requirements are satisfied...

  12. Impact of the Indonesian Throughflow on Agulhas leakage

    Directory of Open Access Journals (Sweden)

    D. Le Bars

    2013-09-01

    Full Text Available Using ocean models of different complexity we show that opening the Indonesian Passage between the Pacific and the Indian oceans increases the input of Indian Ocean water into the South Atlantic via the Agulhas leakage. In a strongly eddying global ocean model this response results from an increased Agulhas Current transport and a constant proportion of Agulhas retroflection south of Africa. The leakage increases through an increased frequency of ring shedding events. In an idealized two-layer and flat-bottom eddy resolving model, the proportion of the Agulhas Current transport that retroflects is (for a wide range of wind stress forcing not affected by an opening of the Indonesian Passage. Using a comparison with a linear model and previous work on the retroflection problem, the result is explained as a balance between two mechanisms: decrease retroflection due to large-scale momentum balance and increase due to local barotropic/baroclinic instabilities.

  13. Self-field effects on critical current density and current-voltage characteristics in superconducting YBaCuO thick films

    Energy Technology Data Exchange (ETDEWEB)

    Hernandez, A.D.; Hart, C.; Martinez, C.M.; Ares, O. [Superconductivity Lab, IMRE-University of Havana, Vedado 10400, Havana (Cuba)

    1999-07-01

    The self-field and percolative influences on transport measurements of polycrystalline bridges engraved on YBaCuO thick film have been investigated. A maximum in the dependence of the critical current density on cross-sectional area of the bridge (A = 0.003 mm{sup 2}-0.3 mm{sup 2}) has been found experimentally, in samples with low critical current densities (J{sub c}<50 A cm{sup -2}). The result of the measurements are in agreement with Mulet and coworkers, who have predicted that, under certain conditions, the self-field effects on transport measurements are negligible and the J{sub c} dependence on the sample dimensions is determined by the percolative character of the transport current. Self-field influences have also been observed in current-voltage characteristics, which have been analysed using the Ambegaokar-Halperin phase-slip theory. By allowing the noise parameter ({gamma}) to change with temperature, magnetic field and transport current, adequate agreement between theoretical and experimental current-voltage characteristics has been obtained. The dependence of the noise parameter with the transport current is demonstrated to be related with the self-field. (author)

  14. Characteristics of cold atmospheric plasma source based on low-current pulsed discharge with coaxial electrodes

    Science.gov (United States)

    Bureyev, O. A.; Surkov, Yu S.; Spirina, A. V.

    2017-05-01

    This work investigates the characteristics of the gas discharge system used to create an atmospheric pressure plasma flow. The plasma jet design with a cylindrical graphite cathode and an anode rod located on the axis of the system allows to realize regularly reproducible spark breakdowns mode with a frequency ∼ 5 kHz and a duration ∼ 40 μs. The device generates a cold atmospheric plasma flame with 1 cm in diameter in the flow of various plasma forming gases including nitrogen and air at about 100 mA average discharge current. In the described construction the cathode spots of individual spark channels randomly move along the inner surface of the graphite electrode creating the secondary plasma stream time-average distributed throughout the whole exit aperture area after the decay of numerous filamentary discharge channels. The results of the spectral diagnostics of plasma in the discharge gap and in the stream coming out of the source are presented. Despite the low temperature of atoms and molecules in plasma stream the cathode spots operation with temperature of ∼ 4000 °C at a graphite electrode inside a discharge system enables to saturate the plasma by CN-radicals and atomic carbon in the case of using nitrogen as the working gas.

  15. Self-assembly of the 3-aminopropyltrimethoxysilane multilayers on Si and hysteretic current-voltage characteristics

    Science.gov (United States)

    Chauhan, A. K.; Aswal, D. K.; Koiry, S. P.; Gupta, S. K.; Yakhmi, J. V.; Sürgers, C.; Guerin, D.; Lenfant, S.; Vuillaume, D.

    2008-03-01

    We report the deposition of 3-aminopropyltrimethoxysilane (APTMS) multilayers on SiOx/Si(p++) substrates by a layer-by-layer self-assembly process. The multilayers were grafted in a glove box having nitrogen ambient with both humidity and oxygen contents water contact angle, ellipsometry, X-rayphotoelectron spectroscopy and atomic force microscope measurements revealed that self-assembling of the multilayers takes place in two distinct stages: (i) the first APTMS monolayer chemisorbs on a hydroxylated oxide surface by a silanization process and, (ii) the surface amino group of the first monolayer chemisorbs the hydrolyzed silane group of other APTMS molecules present in the solution, leading to the formation of a bilayer. The second stage is a self-replicating process that results in the layer-by-layer self-assembly of the multilayers with trapped NH3 + ions. The current-voltage characteristics of the multilayers exhibit a hysteresis effect along with a negative differential resistance, suggesting their potential application in the molecular memory devices. A possible mechanism for the observed hysteresis effect based on filling and de-filling of the NH3 + acting as traps is presented.

  16. Nonlinear current-voltage characteristics of sintered tungsten-vanadium oxide

    Institute of Scientific and Technical Information of China (English)

    Liu Zu-Li; Yang Lin-Feng; Wang Yu; Yao Kai-Lun; Wang Chuan-Cong

    2004-01-01

    We have studied the densification behaviour, microstructure and electrical properties of WO3 ceramics with V2O5as the additive ranging from 0.5 to 15mo1%. Scanning electron microscopic photos indicated that the grain size of WO3-V2O5 specimens is smaller than that of pure WO3. The addition of V2O5 to WO3 showed a tendency to enhance the densification rate and to restrict the grain growth. Electrical properties of all specimens were measured for different electrodes at different temperatures. The formation of the grain boundary barrier layer was confirmed by the non-ohmic I-V behaviour. The nonlinear coefficient was obtained at the current density J=0.01, 0.1 and 1mA-cm2 for a series of WO3-V2O5 samples. The V0.Smol% specimen showed an abnormal phenomenon that the nonlinear characteristics appeared at 350℃ and disappeared at lower and higher temperatures. This implies that it could be applied as a hightemperature varistor. The double Schottky barrier model was adopted to explain the phenomena for the WO3-V2O5varistors.

  17. Morphology and Frictional Characteristics Under Electrical Currents of Al203/Cu Composites Prepared by Internal Oxidation

    Institute of Scientific and Technical Information of China (English)

    Liu Ruihua; Song Kexing; Jia Shuguo; Xu Xiaofeng; Gao Jianxin; Guo Xiuhua

    2008-01-01

    Two AhO3/Cu composites containing 0.24 wt.% A1203 and 0.60 wt.% A1203 separately are prepared by internal oxidation.Effectsof sliding speed and pressure on the fi-ictional characteristics of the composites and copper against brass are investigated and compared.The changes in morphology of the sliding surface and subsurface are examined with scanning electron microscope (SEM) and energy dispersive X-ray spectrum (EDS).The results show that the wear resistance of the AI203/Cu composites is superior to that of copperunder the same conditions.Under a given electrical current,the wear rate of AI203/Cu composites decreases as the AleO3-content increases.However,the wear rates of the Al203/Cu composites and copper increase as the sliding speed and pressure increase under drysliding condition.The main wear mechanisms for AleO3/Cu composites are of abrasion and adhesion;for copper,it is adhesion,although wear by oxidation and electrical erosion can also be observed as the speed and pressure rise.

  18. First-Principles Electronic Structure Studies of the Current-Voltage Characteristics of Molecular Nanostructures

    Science.gov (United States)

    Pati, Ranjit; Karna, Shashi P.

    2001-03-01

    Recent advancements in the experimental measurement of conductance across a single molecule(M. A. Reed et al, Science, 278) , 252 (1997). have generated great deal of interest in the feasibility of molecular electronic devices. A successful realization of molecule based electronic devices rests on a detailed understanding of the physical principles underlying controlled transport of electron/hole across molecular units. In order to develop such a fundamental understanding, we have investigated current-voltage characteristics of metal atom (Ag, Au) substituted 1,4-dithiobenzene within Green's function approach according to Datta and coworkers( W. Tian et al, J. Chem. Phys., 109), 2874 (1998).. Ab initio Hamiltonian matrix elements are used to construct the Green's function. The calculated conductance spectrum for the molecule with S bonded to Au atoms qualitatively agrees with the experiment^1. However, large quantitative difference between the calculated and measured conductance is noted. The Au and Ag bonded 1,4-dithiobenzene molecules exhibit marked difference in their resistance and conductance spectra. The conductance of the Ag-bonded molecule is calculated to be about 1.5 times larger than that bonded with Au.

  19. Investigation of Characteristics of Large dB/dt for Geomagnetically Induced Currents

    Science.gov (United States)

    Munoz, D.; Ngwira, C.; Damas, M. C.

    2016-12-01

    When geomagnetically induced currents (GICs) flow through electrical networks, they become a potential threat for electrical power systems. Changes in the geomagnetic field (dB/dt) during severe geomagnetic disturbances are the main sources of GICs. These dB/dt phenomena were studied by selecting 24 strong geomagnetic storms with Dst ≤ - 150 nT. ACE spacecraft solar wind data: flow speed, proton density, By and Bz IMF components of the solar wind were correlated with measurements of the magnetic field detected on ground stations at different latitudes. This article reports characteristics of the solar wind during time intervals of large changes in the horizontal geomagnetic field with a threshold of dB/dt ≥ ± 20 nT/min for the 24 geomagnetic storms. The results of this investigation can help scientists to understand the mechanisms responsible for causing large magnetic field variations in order to predict and mitigate possible large events in the future, which is critical for our society that relies constantly on electricity for livelihood and security. In addition, this ongoing project will continue to investigate electron flux response before, during, and after large changes in geomagnetic field.

  20. Measurement of AC and DC Insulation Leakage in Platinum Resistance Thermometers up to 960 °C

    Science.gov (United States)

    García, C.; del Campo, D.; Raso, F.

    2011-08-01

    It is well known that insulation leakage at high temperatures can be one of the major contributions to uncertainties in measured temperatures above 600 °C. On the one hand, this insulation leakage shunts the sensor resistor leading to systematic errors in the measured temperatures, which are, in principle, characteristics of each thermometer. On the other hand, at high temperatures, degradation of the insulation materials used in the furnaces enhances the decrease of the insulation impedance between the thermometer and the furnace which also causes a systematic temperature measurement error. Two high-temperature standard platinum resistance thermometers have been used to measure these effects in different heat-pipe and three-zone furnaces. One of them was open-circuited by cutting the sensing element end allowing the measurement of the resistance between the two pairs of current-potential leads. Two different setups were used to measure the AC and DC insulation resistances lead-to-lead and thermometer-to-furnace. The first one was a teraohmeter with a high value standard resistor in parallel with the leakage resistance to be measured and the other one an LCR meter to perform the AC measurements at different frequencies. In this article, results for both methods are presented.

  1. Experimental evaluation of clinical colon anastomotic leakage

    DEFF Research Database (Denmark)

    Pommergaard, Hans-Christian

    2014-01-01

    has been improved and is now thoroughly validated. If used by researchers worldwide, comparison of results is possible. Pure ischemia/anoxia may be too simple an approach to create a clinical leakage model. Thus, future models could focus on multiple risk factors. Conclusively, large-scale clinical...... mice. The number of sutures in the intervention group was reduced to produce a suitable leakage rate. Moreover, the analgesia and suture material were changed in order to optimize the model. In the final experiment, the four-suture anastomoses resulted in a 40% leakage rate in the intervention groups...

  2. Correlating antimicrobial activity and model membrane leakage induced by nylon-3 polymers and detergents.

    Science.gov (United States)

    Hovakeemian, Sara G; Liu, Runhui; Gellman, Samuel H; Heerklotz, Heiko

    2015-09-14

    Most antimicrobial peptides act upon target microorganisms by permeabilizing their membranes. The mode of action is often assessed by vesicle leakage experiments that use model membranes, with the assumption that biological activity correlates with the permeabilization of the lipid bilayer. The current work aims to extend the interpretation of vesicle leakage results and examine the correlation between vesicle leakage and antimicrobial activity. To this end, we used a lifetime-based leakage assay with calcein-loaded vesicles to study the membrane permeabilizing properties of a novel antifungal polymer poly-NM, two of its analogs, and a series of detergents. In conjunction, the biological activities of these compounds against Candida albicans were assessed and correlated with data from vesicle leakage. Poly-NM induces all-or-none leakage in polar yeast lipid vesicles at the polymer's MIC, 3 μg mL(-1). At this and higher concentrations, complete leakage after an initial lag time was observed. Concerted activity tests imply that this polymer acts independently of the detergent octyl glucoside (OG) for both vesicle leakage and activity against C. albicans spheroplasts. In addition, poly-NM was found to have negligible activity against zwitterionic vesicles and red blood cells. Our results provide a consistent, detailed picture of the mode of action of poly-NM: this polymer induces membrane leakage by electrostatic lipid clustering. In contrast, poly-MM:CO, a nylon-3 polymer comprised of both cationic and hydrophobic segments, seems to act by a different mechanism that involves membrane asymmetry stress. Vesicle leakage for this polymer is transient (limited to nylon-3 polymers we examined act via similar mechanisms; it is surprising that their mechanisms are so distinct. Some, but not all mechanisms of vesicle permeabilization allow for antimicrobial activity.

  3. Effects of Annealing on Electrical Characteristics and Current Transport Mechanisms of the Y/ p-GaN Schottky Diode

    Science.gov (United States)

    Reddy, V. Rajagopal; Asha, B.; Choi, Chel-Jong

    2016-07-01

    This study investigates the effects of annealing on the electrical properties and current transport mechanism of Y/ p-GaN Schottky barrier diodes (SBDs). We found no significant change in the surface morphology of the Y Schottky contacts during the annealing process. The Schottky barrier height (SBH) of the as-deposited Y/ p-GaN SBD was estimated to be 0.95 eV ( I- V)/1.19 eV ( C- V). The SBH increased upon annealing at 400°C and 500°C, and then decreased slightly with annealing at 600°C. Thus the maximum SBH of the Y/ p-GaN SBD was achieved at 500°C, with values of 1.01 eV ( I- V)/1.29 eV ( C- V). In addition, the SBH values were estimated by Cheung's, Norde, and Ψs- V plots and were found to be in good agreement with one another. Series resistance ( R S) values were also calculated by I- V, Cheung's, and Norde functions at different annealing temperatures, with results showing a decrease in the interface state density of the SBD with annealing at 500°C, followed by a slight increase upon annealing at 600°C. The forward-bias current transport mechanism of SBD was investigated by the log I-log V plot at different annealing temperatures. Our investigations revealed that the Poole-Frenkel emission mechanism dominated the reverse leakage current in Y/ p-GaN SBD at all annealing temperatures.

  4. Characteristics of electron cyclotron resonance plasma formed by lower hybrid current drive grill antenna

    Indian Academy of Sciences (India)

    P K Sharma; S L Rao; K Mishra; R G Trivedi; D Bora

    2008-03-01

    A 3.7 GHz system, which is meant for LHCD experiments on ADITYA tokamak, is used for producing ECR discharge. The ECR discharge is produced by setting the appropriate resonance magnetic field of 0.13 T, with hydrogen at a fill pressure of about 5 × 10-5 Torr. The RF powe r, up to 10 kW (of which ∼ 50% is reflected back), with a typical pulse length of 50 ms, is injected into the vacuum chamber of the ADITYA tokamak by a LHCD grill antenna and is used for plasma formation. The average coupled RF power density (the RF power/a typical volume of the plasma) is estimated to be ∼ 5 kW/m3. When the ECR appears inside the tokamak chamber for the given pumping frequency ( = 3.7 GHz) a plasma with a density () ∼ 4 × 1016 m-3 and electron temperature ∼ 8 eV is produced. The density and temperature during the RF pulse are measured by sets of Langmuir probes, located toroidally, on either side of the antenna. signals are also monitored to detect ionization. An estimate of density and temperature based on simple theoretical calculation agrees well with our experimental measurements. The plasma produced by the above mechanism is further used to characterize the ECR-assisted low voltage Ohmic start-up discharges. During this part of the experiments, Ohmic plasma is formed using capacitor banks. The plasma loop voltage is gradually decreased, till the discharge ceases to form. The same is repeated in the presence of ECR-formed plasma (RF pre-ionization), formed 10 ms prior to the loop voltage. We have observed that (with LHCD-induced) ECR-assisted Ohmic start-up discharges is reliably and repeatedly obtained with reduced loop voltage requirement and breakdown time decreases substantially. The current ramp-up rates also decrease with reduced loop voltage operation. These studies established that ECR plasma formed with LHCD system exhibits similar characteristics as reported earlier by dedicated ECR systems. This experiment also addresses the issue of whether ECR plasma

  5. GENERATOR VIBRATION FAULT DIAGNOSIS METHOD BASED ON ROTOR VIBRATION AND STATOR WINDING PARALLEL BRANCHES CIRCULATING CURRENT CHARACTERISTICS

    Institute of Scientific and Technical Information of China (English)

    Wan Shuting; Li Heming; Li Yonggang; Tang Guiji

    2005-01-01

    Rotor vibration characteristics are first analyzed, which are that the rotor vibration of fundamental frequency will increase due to rotor winding inter-turn short circuit fault, air-gap dynamic eccentricity fault, or imbalance fault, and the vibration of the second frequency will increase when the air-gap static eccentricity fault occurs. Next, the characteristics of the stator winding parallel branches circulating current are analyzed, which are that the second harmonics circulating current will increase when the rotor winding inter-turn short circuit fault occurs, and the fundamental circulating current will increase when the air-gap eccentricity fault occurs, neither being strongly affected by the imbalance fault. Considering the differences of the rotor vibration and circulating current characteristics caused by different rotor faults, a method of generator vibration fault diagnosis, based on rotor vibration and circulating current characteristics, is developed. Finally, the rotor vibration and circulating current of a type SDF-9 generator is measured in the laboratory to verify the theoretical analysis presented above.

  6. Current tectonic deformation and seismogenic characteristics along the northeast margin of Qinghai-Xizang block*

    Institute of Scientific and Technical Information of China (English)

    王双绪; 江在森; 张希; 陈文胜

    2002-01-01

    Based on the data from repeated precise leveling and across-fault deformation measurements carried out in recent 30 years and the analyzed results from GPS observations made in recent years along the northeastern margin of Qinghai(Xizang block, and combined with the geological structures and seismic activities, some characteristics in regional tectonic deformation and strong earthquake development are studied and approached preliminarily. The results show that: a) The space-time distribution of current tectonic deformation in this area is inhomogeneous with relatively intensive tectonic deformation in the vicinity of main boundary faults and weak deformation in the farther areas. The intensity of vertical differential movement and the deformation status vary with time, and the horizontal movement and deformation are characterized by apparent compression and strike-slip. b) The tectonic stress field generated by the NE-trending continuous compressive movement of Qinghai(Xizang block due to the northward press and collision of India plate is the principal stress for the tectonic deformation and earthquake development in this area. The evolution of space-time distribution of tectonic deformation and seismicity is closely related to the block activity and dynamic evolution of regional tectonic stress field. c) The vertical deformation uplift and high-gradient deformation zones and the obvious fault deformation anomaly appeared along the boundaries of tectonic blocks can be considered as the indicators of hindered block motion and intensified tectonic stress field for strong earthquake development. Usually, the above-mentioned phenomena would be followed by the seismicity of M(6.0, but the earthquake might not occur in the place with the maximum movement. The zones with the fault deformation anomaly characterized by (tendencious accumulation acceleration turning( and the surrounding areas might be the positions for accumulation of strain energy and development and

  7. Architectural Leakage Power Minimization of Scratchpad memories

    Directory of Open Access Journals (Sweden)

    S. Paraneetharan,

    2012-03-01

    Full Text Available Partitioning a memory into multiple blocks that can be independently accessed is a widely used technique to reduce its dynamic power. For embedded systems, its benefits can be even pushed further by properly matching the partition to the memory access patterns. When leakage energy comes into play, however, idle memory blocks must be put into a proper low-leakage sleep state to actually save energy when not accessed. In this case, the matching becomes an instance of the power management problem, because moving to and from this sleep state requires additional energy. An effective solution to the problem of the leakage-aware partitioning of a memory into disjoint sub blocks, in particular, target scratchpad memories, which are commonly used in some embedded systems as a replacement for caches. By this approach, it is able to provide an optimal solution to the leakage-aware partitioning problem.

  8. Influence of bio-membrane on current characteristics induced by ambient ELF magnetic field for spherical tissue model

    Energy Technology Data Exchange (ETDEWEB)

    Hayashi, Noriyuki [Kyushu University, Kasuga (Japan). Graduate School of Engineering Sciences; Tarao, Hiroo; Isaka, Katsuo [University of Tokushima (Japan). Faculty of Engineering

    1999-07-01

    Based on the experimental works using rats and chicken eggs, possible influences of the bio-membrane on the electric field and resultant current induced by the exposure to ambient ELF magnetic field, have been pointed out. Existence of the bio-membrane is, however, rarely implemented in conventional procedures of the induced current examination. The present contribution presents results of the analytical examination on how the thickness and electric conductivity of the bio-membrane affect the induced current profiles, indicating the significant role of the bio-membrane on the exact evaluation of the induced current characteristics. (author)

  9. Characteristics of inertial oscillations according to the experimental measurements of currents on the Russian shelf of the Black Sea

    Science.gov (United States)

    Bondur, V. G.; Sabinin, K. D.; Grebenyuk, Yu. V.

    2017-01-01

    The analysis of inertial oscillations on the Gelendzhik shelf of the Black Sea is presented. Spectral characteristics of the current fields are studied based on the measurements taken by the acoustic Doppler current profiler. Strong variability of the inertial oscillation hodographs at variations in the background shear current and diverse forms of inertial oscillations measured at a fixed point at various values of the shear current are revealed. The relation between the passage of the multidirectional jets and the trains of inertial oscillations inside the jets in the studied region are established.

  10. Analysis of ONKALO water leakage mapping results

    Energy Technology Data Exchange (ETDEWEB)

    Ahokas, H.; Nummela, J; Turku, J. [Poeyry Finland Oy, Vantaa (Finland)

    2014-04-15

    As part of the programme for the final disposal of spent nuclear fuel, an analysis has been compiled of water leakage mapping performed in ONKALO. Leakage mapping is part of the Olkiluoto Monitoring Programme (OMO) and the field work has been carried out by Posiva Oy. The main objective of the study is to analyse differences detected between mapping campaigns carried out typically twice a year in 2005-2012. Differences were estimated to be caused by the differences in groundwater conditions caused by seasonal effects or by differences between the years. The effect of technical changes like shotcreting, postgrouting, ventilation etc. on the results was also studied. The development of the visualisation of mapping results was also an objective of this work. Leakage mapping results have been reported yearly in the monitoring reports of Hydrology with some brief comments on the detected differences. In this study, the development of the total area and the number of different leakages as well as the correlation of changes with shotcreting and grouting operations were studied. In addition, traces of fractures on tunnel surfaces, and the location of rock bolts and drain pipes were illustrated together with leakage mapping. In water leakage mapping, the tunnel surfaces are visually mapped to five categories: dry, damp, wet, dripping and flowing. Major changes were detected in the total area of damp leakages. It is likely that the increase has been caused by the condensation of warm ventilation air on the tunnel surfaces and the corresponding decrease by the evaporation of moisture into the dry ventilation air. Shotcreting deep in ONKALO may also have decreased the total area of damp leakages. Changes in the total area and number of wet leakages correlate at least near the surface with differences in yearly precipitation. It is possible that strong rains have also caused a temporary increase in wet leakages. Dripping and wet leakages have been observed on average more

  11. Indoor-Outdoor Air Leakage of Apartments and Commercial Buildings

    Energy Technology Data Exchange (ETDEWEB)

    Price, P.N.; Shehabi, A.; Chan, R.W.; Gadgil, A.J.

    2006-06-01

    We compiled and analyzed available data concerning indoor-outdoor air leakage rates and building leakiness parameters for commercial buildings and apartments. We analyzed the data, and reviewed the related literature, to determine the current state of knowledge of the statistical distribution of air exchange rates and related parameters for California buildings, and to identify significant gaps in the current knowledge and data. Very few data were found from California buildings, so we compiled data from other states and some other countries. Even when data from other developed countries were included, data were sparse and few conclusive statements were possible. Little systematic variation in building leakage with construction type, building activity type, height, size, or location within the u.s. was observed. Commercial buildings and apartments seem to be about twice as leaky as single-family houses, per unit of building envelope area. Although further work collecting and analyzing leakage data might be useful, we suggest that a more important issue may be the transport of pollutants between units in apartments and mixed-use buildings, an under-studied phenomenon that may expose occupants to high levels of pollutants such as tobacco smoke or dry cleaning fumes.

  12. A Minimum Leakage Quasi-Static RAM Bitcell

    Directory of Open Access Journals (Sweden)

    Adam Teman

    2011-05-01

    Full Text Available As SRAMs continue to grow and comprise larger percentages of the area and power consumption in advanced systems, the need to minimize static currents becomes essential. This brief presents a novel 9T Quasi-Static RAM Bitcell that provides aggressive leakage reduction and high write margins. The quasi-static operation method of this cell, based on internal feedback and leakage ratios, minimizes static power while maintaining sufficient, albeit depleted, noise margins. This paper presents the concept of the novel cell, and discusses the stability of the cell under hold, read and write operations. The cell was implemented in a low-power 40 nm TSMC process, showing as much as a 12× reduction in leakage current at typical conditions, as compared to a standard 6T or 8T bitcell at the same supply voltage. The implemented cell showed full functionality under global and local process variations at nominal and low voltages, as low as 300 mV.

  13. Support calculations for management of PRISE leakage accidents

    Energy Technology Data Exchange (ETDEWEB)

    Matejovic, P.; Vranka, L. [Nuclear Power Plants Research Inst. Vuje, Trnava (Slovakia)

    1997-12-31

    Accidents involving primary-to-secondary leakage (PRISE) caused by rupture of one or a few tubes are well known design basis events in both, western and VVER NPPs. Operating experience and in-service inspections of VVER-440 units have demonstrated also the potential for large PRISE leaks in the case of the steam generator (SG) primary collector cover lift-up (Rovno NPP). Without performing any countermeasure for limitation of SG collector cover lift-up, a full opening results in PRISE leak with an equivalent diameter 107 mm. Although this accident was not considered in the original design, this event is usually analysed as DBA too. Different means are available for detection and mitigation of PRISE leakage in NPPs currently in operation (J.Bohunice V-1 and V-2) or under construction (Mochovce) in Slovakia. 8 refs.

  14. Design of Low Power CMOS Circuits using Leakage Control Transistor and Multi-Threshold CMOS Techniques

    OpenAIRE

    2012-01-01

    The scaling down of technology in CMOS circuits, results in the down scaling of threshold voltage thereby increasing the sub-threshold leakage current. An IC consists of many circuits of which some circuits consists critical path like full adder, whereas some circuits like multiplexer and decoder has no specified critical path. LECTOR is a technique for designing leakage power reduced CMOS circuits without affecting the dynamic power dissipation, which can be used for circuits with no specifi...

  15. Influence of pulse line switch inductance on output characteristics of high-current nanosecond accelerators

    Science.gov (United States)

    Mashchenko, A. I.; Vintizenko, I. I.

    2016-06-01

    Various types of high-current nanosecond accelerators are simulated numerically using an equivalent circuit representation. The influence of pulse forming line switch inductance on the amplitude and waveform of output voltage and current pulses is analyzed.

  16. A retrospective analysis of endoscopic treatment outcomes in patients with postoperative bile leakage

    Science.gov (United States)

    Sayar, Suleyman; Olmez, Sehmus; Avcioglu, Ufuk; Tenlik, Ilyas; Saritas, Bunyamin; Ozdil, Kamil; Altiparmak, Emin; Ozaslan, Ersan

    2016-01-01

    OBJECTIVE: Bile leakage, while rare, can be a complication seen after cholecystectomy. It may also occur after hepatic or biliary surgical procedures. Etiology may be underlying pathology or surgical complication. Endoscopic retrograde cholangiopancreatography (ERCP) can play major role in diagnosis and treatment of bile leakage. Present study was a retrospective analysis of outcomes of ERCP procedure in patients with bile leakage. METHODS: Patients who underwent ERCP for bile leakage after surgery between 2008 and 2012 were included in the study. Etiology, clinical and radiological characteristics, and endoscopic treatment outcomes were recorded and analyzed. RESULTS: Total of 31 patients (10 male, 21 female) were included in the study. ERCP was performed for bile leakage after cholecystectomy in 20 patients, after hydatid cyst operation in 10 patients, and after hepatic resection in 1 patient. Clinical signs and symptoms of bile leakage included abdominal pain, bile drainage from percutaneous drain, peritonitis, jaundice, and bilioma. Twelve (60%) patients were treated with endoscopic sphincterotomy (ES) and nasobiliary drainage (NBD) catheter, 7 patients (35%) were treated with ES and biliary stent (BS), and 1 patient (5%) was treated with ES alone. Treatment efficiency was 100% in bile leakage cases after cholecystectomy. Ten (32%) cases of hydatid cyst surgery had subsequent cystobiliary fistula. Of these patients, 7 were treated with ES and NBD, 2 were treated with ES and BS, and 1 patient (8%) with ES alone. Treatment was successful in 90% of these cases. CONCLUSION: ERCP is an effective method to diagnose and treat bile leakage. Endoscopic treatment of postoperative bile leakage should be individualized based on etiological and other factors, such as accompanying fistula. PMID:28058396

  17. High-temperature performance of MoS{sub 2} thin-film transistors: Direct current and pulse current-voltage characteristics

    Energy Technology Data Exchange (ETDEWEB)

    Jiang, C.; Samnakay, R.; Balandin, A. A., E-mail: balandin@ee.ucr.edu [Nano-Device Laboratory (NDL), Department of Electrical Engineering, Bourns College of Engineering, University of California—Riverside, Riverside, California 92521 (United States); Phonon Optimized Engineered Materials (POEM) Center, Materials Science and Engineering Program, University of California—Riverside, Riverside, California 92521 (United States); Rumyantsev, S. L. [Department of Electrical, Computer, and Systems Engineering, Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States); Ioffe Physical-Technical Institute, St. Petersburg 194021 (Russian Federation); Shur, M. S. [Department of Electrical, Computer, and Systems Engineering, Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States)

    2015-02-14

    We report on fabrication of MoS{sub 2} thin-film transistors (TFTs) and experimental investigations of their high-temperature current-voltage characteristics. The measurements show that MoS{sub 2} devices remain functional to temperatures of at least as high as 500 K. The temperature increase results in decreased threshold voltage and mobility. The comparison of the direct current (DC) and pulse measurements shows that the direct current sub-linear and super-linear output characteristics of MoS{sub 2} thin-films devices result from the Joule heating and the interplay of the threshold voltage and mobility temperature dependences. At temperatures above 450 K, a kink in the drain current occurs at zero gate voltage irrespective of the threshold voltage value. This intriguing phenomenon, referred to as a “memory step,” was attributed to the slow relaxation processes in thin films similar to those in graphene and electron glasses. The fabricated MoS{sub 2} thin-film transistors demonstrated stable operation after two months of aging. The obtained results suggest new applications for MoS{sub 2} thin-film transistors in extreme-temperature electronics and sensors.

  18. Air Leakage and Air Transfer Between Garage and Living Space

    Energy Technology Data Exchange (ETDEWEB)

    Rudd, Armin [Building Science Corporation, Westford, MA (United States)

    2014-09-01

    This research project focused on evaluation of air transfer between the garage and living space in a single-family detached home constructed by a production homebuilder in compliance with the 2009 International Residential Code and the 2009 International Energy Conservation Code. The project gathered important information about the performance of whole-building ventilation systems and garage ventilation systems as they relate to minimizing flow of contaminated air from garage to living space. A series of 25 multi-point fan pressurization tests and additional zone pressure diagnostic testing characterized the garage and house air leakage, the garage-to-house air leakage, and garage and house pressure relationships to each other and to outdoors using automated fan pressurization and pressure monitoring techniques. While the relative characteristics of this house may not represent the entire population of new construction configurations and air tightness levels (house and garage) throughout the country, the technical approach was conservative and should reasonably extend the usefulness of the results to a large spectrum of house configurations from this set of parametric tests in this one house. Based on the results of this testing, the two-step garage-to-house air leakage test protocol described above is recommended where whole-house exhaust ventilation is employed.

  19. Oil Leakage from the Seal Ring of a Scroll Compressor

    Science.gov (United States)

    Kobayashi, Naoki; Fukui, Atsushi; Horiguchi, Hironori; Tsujimoto, Yoshinobu; Toyama, Toshiyuki

    In scroll compressors for air conditioners, there is a compressor with back-pressure chamber spaced by seal ring behind orbiting scroll. High pressure in the backpressure chamber presses the orbiting scroll to fixed scroll. In the case that lubrication oil and refrigerant gas with high pressure and temperature in the backpressure chamber leak to low pressure chamber through the seal ring, the efficiency of compressor decreases and the oil circulation rate can increase. In the present study the leakage characteristics of lubrication oil from the backpressure chamber to the low pressure chamber were investigated. In experiment, it was found that the oil leakage is larger for higher rotational speed of rotating disk, higher viscosity of oil and smaller pressure difference between the backpressure and low-pressure chambers. This could be explained by the calculation in which the seal ring was assumed to have a tilt angle. It was also found in the calculation that oil leakage is larger due to the thicker oil film between the seal ring and the rotating disk in the case of higher rotational speed of the disk, higher viscosity of oil and smaller pressure difference between the backpressure and low-pressure chambers.

  20. Statistical analysis of sudden chemical leakage accidents reported in China between 2006 and 2011.

    Science.gov (United States)

    Li, Yang; Ping, Hua; Ma, Zhi-Hong; Pan, Li-Gang

    2014-04-01

    According to the data from authoritative sources, 1,400 sudden leakage accidents occurred in China during 2006 to 2011 were investigated, in which, 666 accidents were used for statistical characteristic abstracted with no or little damage. The research results were as follows: (1) Time fluctuation: the yearly number of sudden leakage accidents is shown to be decreasing from 2006 to 2010, and a slightly increase in 2011. Sudden leakage accidents occur mainly in summer, and more than half of the accidents occur from May to September. (2) Regional distribution: the accidents are highly concentrated in the coastal area, in which accidents result from small and medium-sized enterprises more easily than that of the larger ones. (3) Pollutants: hazardous chemicals are up to 95 % of sudden leakage accidents. (4) Steps: transportation represents almost half of the accidents, followed by production, usage, storage, and discard. (5) Pollution and casualties: it is easy to cause environmental pollution and casualties. (6) Causes: more than half of the cases were caused by human factor, followed by management reason, and equipment failure. However, sudden chemical leakage may also be caused by high temperature, rain, wet road, and terrain. (7) The results of principal component analysis: five factors are extracted by the principal component analysis, including pollution, casualties, regional distribution, steps, and month. According to the analysis of the accident, the characteristics, causes, and damages of the sudden leakage accident will be investigated. Therefore, advices for prevention and rescue should be acquired.

  1. Water characteristics and transport of the Antarctic circumpolar current in the Indian Ocean

    Digital Repository Service at National Institute of Oceanography (India)

    Muraleedharan, P.M.; Mathew, B.

    Geostrophic velocities are computed across meridians 37 degrees E and 105 degrees E using hydrographic data. The estimated mass transport is represented on a temperature - salinity diagram. The characteristics of the water within the Antarctic...

  2. Cognitive load theory and multimedia learning, task characteristics, and learning engagement: The current state of the art

    NARCIS (Netherlands)

    Kirschner, Femke; Kester, Liesbeth; Corbalan, Gemma

    2010-01-01

    Kirschner, F., Kester, L., & Corbalan, G. (2011). Cognitive load theory and multimedia learning, task characteristics, and learner engagement: The current state of the art. Computers in Human Behavior, 27, 1-4. doi:10.1016/j.chb.2010.05.003

  3. Cognitive load theory and multimedia learning, task characteristics, and learning engagement: The current state of the art

    NARCIS (Netherlands)

    Kirschner, Femke; Kester, Liesbeth; Corbalan, Gemma

    2010-01-01

    Kirschner, F., Kester, L., & Corbalan, G. (2011). Cognitive load theory and multimedia learning, task characteristics, and learner engagement: The current state of the art. Computers in Human Behavior, 27, 1-4. doi:10.1016/j.chb.2010.05.003

  4. Analysis of energy leakage characteristics of dual-tree complex wavelet packet transform and its application on gear fault diagnosis%基于双树复小波包变换能量泄漏特性分析的齿轮故障诊断

    Institute of Scientific and Technical Information of China (English)

    胥永刚; 孟志鹏; 赵国亮; 付胜

    2014-01-01

    good qualities. Because the energy leakage of the frequency band was smaller when the signal was decomposed by a dual tree complex wavelet packet transform, the dual tree complex wavelet packet transform was used to extract the fault feature information in the field of fault diagnosis. In this paper, first, according to the characteristics of Gaussian white noise, whose frequency was full of the whole frequency band, Gaussian white noise was decomposed by a dual-tree complex wavelet packet transform, and the parts with energy leakage were regarded as a theoretical part band beyond the range of the frequency components. Then the lower energy leakage characteristic of dual tree complex wavelet packet transform was verified by a quantitative analysis method of frequency band energy leakage. A dual tree complex wavelet packet transform has an advantage in the pretreatment of envelope demodulation compared with the method of discrete wavelet packet transform. Secondly, the signal was decomposed layer-by-layer by a dual tree complex wavelet packet transform, and the kurtogram based on a dual tree complex wavelet packet transform could be obtained by computing the spectral kurtosis of every layer’s components. According to the standard of maximum kurtosis, the layer of decomposition and the component about the signal can be chosen automatically and accurately. The best layer of the dual tree complex wavelet packet decomposition was the layer of the maximum kurtosis and the component which had the maximum kurtosis was the best component of decomposition. Finally, the vibration signal of the engineering was processed by the method of spectral kurtosis based on a dual tree complex wavelet packet transform, the best decomposition layer and component could be chosen, and the fault feature information was extracted effectively by a Hilbert envelope demodulation, where the feasibility and effectiveness of the method were verified. The research will provide a reference for

  5. Measurements of accelerator-produced leakage neutron and photon transmission through concrete.

    Science.gov (United States)

    Kase, K R; Nelson, W R; Fasso, A; Liu, J C; Mao, X; Jenkins, T M; Kleck, J H

    2003-02-01

    Optimum shielding of the radiation from particle accelerators requires knowledge of the attenuation characteristics of the shielding material. The most common material for shielding this radiation is concrete, which can be made using various materials of different densities as aggregates. These different concrete mixes can have very different attenuation characteristics. Information about the attenuation of leakage photons and neutrons in ordinary and heavy concrete is, however, very limited. To increase our knowledge and understanding of the radiation attenuation in concrete of various compositions, we have performed measurements of the transmission of leakage radiation, photons and neutrons, from a Varian Clinac 2100C medical linear accelerator operating at maximum electron energies of 6 and 18 MeV. We have also calculated, using Monte Carlo techniques, the leakage neutron spectra and its transmission through concrete. The results of these measurements and calculations extend the information currently available for designing shielding for medical electron accelerators. Photon transmission characteristics depend more on the manufacturer of the concrete than on the atomic composition. A possible cause for this effect is a non-uniform distribution of the high-density aggregate, typically iron, in the concrete matrix. Errors in estimated transmission of photons can exceed a factor of three, depending on barrier thickness, if attenuation in high-density concrete is simply scaled from that of normal density concrete. We found that neutron transmission through the high-density concretes can be estimated most reasonably and conservatively by using the linear tenth-value layer of normal concrete if specific values of the tenth-value layer of the high-density concrete are not known. The reason for this is that the neutron transmission depends primarily on the hydrogen content of the concrete, which does not significantly depend on concrete density. Errors of factors of two

  6. Electrodynamic stabilization conditions for high-temperature superconducting composites with different types of current-voltage characteristic nonlinearity

    Science.gov (United States)

    Arkharov, A. M.; Lavrov, N. A.; Romanovskii, V. R.

    2014-06-01

    The current instability is studied in high-temperature superconducting current-carrying elements with I- V characteristics described by power or exponential equations. Stability analysis of the macroscopic states is carried out in terms of a stationary zero-dimensional model. In linear temperature approximation criteria are derived that allow one to find the maximum allowable values of the induced current, induced electric field intensity, and overheating of the superconductor. A condition is formulated for the complete thermal stabilization of the superconducting composite with regard to the nonlinearity of its I- V characteristic. It is shown that both subcritical and supercritical stable states may arise. In the latter case, the current and electric field intensity are higher than the preset critical parameters of the superconductor. Conditions for these states depending on the properties of the matrix, superconductor's critical current, fill factor, and nonlinearity of the I- V characteristic are discussed. The obtained results considerably augment the class of allowable states for high-temperature superconductors: it is demonstrated that there exist stable resistive conditions from which superconductors cannot pass to the normal state even if the parameters of these conditions are supercritical.

  7. Comparison of Unmodulated Current Control Characteristics of Permanent Magnet Synchronous Motor

    Directory of Open Access Journals (Sweden)

    Anwar Muqorobin

    2014-12-01

    Full Text Available This paper discusses comparison of unmodulated current controls in PMSM, more specifically, on-off, sliding mode, predictive and hybrid controls. The purpose of this study is to select the most appropriate control technique to be adopted. The comparison method is preceded by modeling the motor and entering the values of the motor parameters. PI control is used for speed control and zero d-axis current is employed. Furthermore, performing simulation for each type ofthe selected current controls and analyzing their responses in terms of dq and abc currents, q-axis current response with step reference, as well as THD. Simulation results show that the on-off control gives the best overall performance based on its abc-axis current ripple and THD at large load torque. The hybrid control shows the best response occurring only at the fastest transient time of q-axis current but its response exhibits bad qualities compared with other controls. The predictive control yields the best responses offering the smallest d-axis ripple current and THD at small load torque condition. The sliding mode control, however, does not exhibit any prominent performance compared to the others. Results presented in this paper further indicate that for the PMSM used in the simulation the most appropriate control is the predictive control.

  8. Spectral characteristics of the coastal currents off Thal, Bombay during a fair day

    Digital Repository Service at National Institute of Oceanography (India)

    Suryanarayana, A; Swamy, G.N.

    A typical one-day record of currents measured every 20 min. with a direct reading current meter at an anchored station of mean water depth about 8 m off Thal (Bombay Coast, India) during a fair day was subjected to spectral analysis to identify...

  9. A Study on the EM Leakage Arising from Braided Shielding Cable

    Institute of Scientific and Technical Information of China (English)

    ZHANG Hong-xin; L(U) Ying-hua; BAO Yong-fang; L(U) Jian-gang

    2005-01-01

    To investigate the electromagnetic leakage caused by braided shielding cable, the finite-difference formulation of braided shielding cable for both the inner shield-conductor circuit and outer shield-ground circuit are proposed. Then, the current in shield-ground circuit induced by the transmitting signal in the cable is computed in time-domain, and the shielding effectiveness of braided shield against trapezoid signals is studied. Further more, the video EM leakage in far zone is calculated. At last, the information leakage caused by EM radiation of braided cable is intercepted and recovered using the simulation platform. It is proved that EM radiation of braided cable can give rise to information leakage. It is a key factor that should be concerned in the information secure field.

  10. High Current Density Effect on In-situ Atomic Migration Characteristics of a BiTe Thin Film System

    Science.gov (United States)

    Kim, Seunghyun; Park, Yong-Jin; Joo, Young-Chang; Park, Young-Bae

    2013-10-01

    Understanding fundamental atomic migration characteristics of multicomponent chalcogenide materials such as GeSbTe (GST) and BiTe are important in order to investigate the failure mechanism related to the electrical reliability of thermoelectric materials under high current density. In this work, high current density effect on the in-situ atomic migration characteristics of the BiTe thermoelectric thin films was conducted by real-time observation inside an scanning electron microscope chamber. Under the high current density conditions ranging from 0.83×106 to 1.0×106 A/cm2 at 100 °C, Te migrated toward the cathode, and Bi migrated toward the anode because the electrostatic force was dominant by very high Joule heating effect.

  11. Barrier lowering effect and dark current characteristics in asymmetric GaAs/AlGaAs multi quantum well structure

    Energy Technology Data Exchange (ETDEWEB)

    Altin, E. [Inonu University, Scientific and Technological Research Center, Malatya (Turkey); Anadolu University, Department of Physics, Eskisehir (Turkey); Hostut, M. [Akdeniz University, Department of Secondary Education of Science and Maths., Division of Physics Education, Antalya (Turkey); Ergun, Y. [Anadolu University, Department of Physics, Eskisehir (Turkey)

    2011-12-15

    In this study, we investigate dark current voltage characteristics of GaAs/AlGaAs staircase-like asymmetric multiquantum well structure at various temperatures experimentally. The activation energy is calculated by using Arrhenius plots at different voltages. It is found that the activation energy decreased with increasing electric field. This result is evaluated using a barrier lowering effect which is a combination of geometrical and Poole-Frenkel effects. Measured dark current density-voltage (J-V) characteristics compared with the Levine model, 3D carrier drift model and the emission capture model. The best agreement with the experimental results of dark current densities is obtained by the Levine model. (orig.)

  12. Influence of semiconductor barrier tunneling on the current-voltage characteristics of tunnel metal-oxide-semiconductor diodes

    DEFF Research Database (Denmark)

    Nielsen, Otto M.

    1983-01-01

    Current–voltage characteristics have been examined for Al–SiO2–pSi diodes with an interfacial oxide thickness of delta[approximately-equal-to]20 Å. The diodes were fabricated on and oriented substrates with an impurity concentration in the range of NA=1014–1016 cm−3. The results show that for low...... forward voltages, the diode current is increased with increased NA, but for higher forward voltages, the diode current is decreased as NA is increased. For the diodes examined in this work, the results presented lead to the conclusion that the diode current should be treated as a superposition...... of multistep tunneling recombination current and injected minority carrier diffusion current. This can explain the observed values of the diode quality factor n. The results also show that the voltage drop across the oxide Vox is increased with increased NA, with the result that the lowering of the minority...

  13. Distribution characteristics of coronal electric current density as an indicator for the occurrence of a solar flare

    Science.gov (United States)

    Kang, Jihye; Magara, Tetsuya; Inoue, Satoshi; Kubo, Yuki; Nishizuka, Naoto

    2016-10-01

    In this paper we investigate the distribution characteristics of the coronal electric current density in a flare-producing active region (AR12158; SOL2014-09-10) by reconstructing nonlinear force-free (NLFF) fields from photospheric magnetic field data. A time series of NLFF fields shows the spatial distribution and its temporal development of coronal current density in this active region. A fractal dimensional analysis shows that a concentrated coronal current forms a structure of fractal spatiality. Furthermore, the distribution function of coronal current density is featured with a double power-law profile, and the value of electric current density at the breaking point of a double power-law fitting function shows a noticeable time variation toward the onset of an X-class flare. We discuss that this quantity will be a useful indicator for the occurrence of a flare.

  14. Distribution characteristics of coronal electric current density as an indicator for the occurrence of a solar flare

    Science.gov (United States)

    Kang, Jihye; Magara, Tetsuya; Inoue, Satoshi; Kubo, Yuki; Nishizuka, Naoto

    2016-12-01

    In this paper we investigate the distribution characteristics of the coronal electric current density in a flare-producing active region (AR12158; SOL2014-09-10) by reconstructing nonlinear force-free (NLFF) fields from photospheric magnetic field data. A time series of NLFF fields shows the spatial distribution and its temporal development of coronal current density in this active region. A fractal dimensional analysis shows that a concentrated coronal current forms a structure of fractal spatiality. Furthermore, the distribution function of coronal current density is featured with a double power-law profile, and the value of electric current density at the breaking point of a double power-law fitting function shows a noticeable time variation toward the onset of an X-class flare. We discuss that this quantity will be a useful indicator for the occurrence of a flare.

  15. Determination of leakage areas in nuclear piping

    Energy Technology Data Exchange (ETDEWEB)

    Keim, E. [Siemens/KWU, Erlangen (Germany)

    1997-04-01

    For the design and operation of nuclear power plants the Leak-Before-Break (LBB) behavior of a piping component has to be shown. This means that the length of a crack resulting in a leak is smaller than the critical crack length and that the leak is safely detectable by a suitable monitoring system. The LBB-concept of Siemens/KWU is based on computer codes for the evaluation of critical crack lengths, crack openings, leakage areas and leakage rates, developed by Siemens/KWU. In the experience with the leak rate program is described while this paper deals with the computation of crack openings and leakage areas of longitudinal and circumferential cracks by means of fracture mechanics. The leakage areas are determined by the integration of the crack openings along the crack front, considering plasticity and geometrical effects. They are evaluated with respect to minimum values for the design of leak detection systems, and maximum values for controlling jet and reaction forces. By means of fracture mechanics LBB for subcritical cracks has to be shown and the calculation of leakage areas is the basis for quantitatively determining the discharge rate of leaking subcritical through-wall cracks. The analytical approach and its validation will be presented for two examples of complex structures. The first one is a pipe branch containing a circumferential crack and the second one is a pipe bend with a longitudinal crack.

  16. Characteristic Features of Sea Level Series Analysis in the World Ocean Current Climatic Eustasy Research

    Science.gov (United States)

    Metreveli, G.; Tsivtsivadze, N.; Tavartqiladze, K.; Dokhnadze, G.; Lagidze, L.; Motsonelidze, N.

    2012-04-01

    Climatic eustasy - sea level long-term rise or decrease, is the result of ocean waters thermal expansion and the freshwater balance between land and ocean. This phenomenon accompanies climate change with some delay and like air temperature changes is an ongoing process. It is positive in warm climatic cycles and vice versa. The global climate warming, has provoked current climatic eustasy, which is started in high Northern latitudes in second part of 1890 's, and in secondary ones (basins of the Mediterranean and Black Seas)- in 1915-1923. In 2010 it caused the sea level raise at these latitudes at 0.3-0.4 m, but in the basins of these seas at 0.15 -0.20 m respectively. Climatic eustasy cycles and their continuity significantly influence on the comfortable environment forming process for living organisms in the sea and the coast. Therefore, the study of fundamental characteristics of this phenomena and its forecast in the near future (2025-2030) is highly topical issues. The solution of mentioned problems, with high precision and accuracy, is possible using "sea levels' long statistic series", combined with similar series of air and sea temperatures. The "long" is referred to as levels series if they are composed by two fragments of statistically sufficient length. First one contains information covering the period of negative eustasy, but the second- positive one. Before the using, from the fragments, the "noises", accompanying climatic fluctuations, various short-term trials and errors associated with data collection and processing have to be excluded. With special care the geological trend, caused by the altitude displacement of the coast, carried a data collection system, also should be excluded from them. Out of processed fragments, by the relevant methods, the amount of negative (Hn) and positive (Hp) eustasies, with precision of mm/year is determined. The sum of the absolute value of latter ones is the absolute eustasy (Ha), representing the local rate of

  17. Heat transfer characteristics of current primary packaging systems for pharmaceutical freeze-drying.

    Science.gov (United States)

    Hibler, Susanne; Gieseler, Henning

    2012-11-01

    In the field of freeze-drying, the primary packaging material plays an essential role. Here, the packaging system not only contains and protects the drug product during storage and shipping, but it is also directly involved in the freeze-drying process itself. The heat transfer characteristics of the actual container system influence product temperature and therefore product homogeneity and quality as well as process performance. Consequently, knowledge of the container heat transfer characteristics is of vital importance for process optimization. It is the objective of this review article to provide a summary of research focused on heat transfer characteristics of different container systems for pharmaceutical freeze-drying. Besides the common tubing and molded glass vials and metal trays, more recent packaging solutions like polymer vials, LYOGUARD® trays, syringes, and blister packs are discussed. Recent developments in vial manufacturing are also taken into account.

  18. Spectral characteristics of mesoscale variability of the bottom currents in the Ocean

    Science.gov (United States)

    Morozov, E. G.; Neiman, V. G.

    2016-11-01

    We performed spectral analysis of variations in the bottom currents on the basis of direct measurements in a number of regions of the entire Atlantic Ocean. We compared the spectra of the atmospheric pressure fluctuations at sea level and fluctuations of current velocities in the bottom layer. A significant energy of current fluctuations near the bottom with a synoptic period in the range 10-15 days that exceeds similar energies in the other regions of the ocean was found in the region of the Newfoundland energetically active zone, where increased cyclonic activity in the atmosphere is observed.

  19. Analytical two-dimensional model of solar cell current-voltage characteristics

    Energy Technology Data Exchange (ETDEWEB)

    Caldararu, F.; Caldararu, M.; Nan, S.; Nicolaescu, D.; Vasile, S. (ICCE, Bucharest (RO). R and D Center for Electron Devices)

    1991-06-01

    This paper describes an analytical two-dimensional model for pn junction solar cell I-V characteristic. In order to solve the two-dimensional equations for the minority carrier concentration the Laplace transformation method is used. The model eliminates Hovel's assumptions concerning a one-dimensional model and provides an I-V characteristic that is simpler than those derived from the one-dimensional model. The method can be extended to any other device with two-dimensional symmetry. (author).

  20. Risk factors of pancreatic leakage after pancreaticoduodenectomy

    Institute of Scientific and Technical Information of China (English)

    Yin-Mo Yang; Xiao-Dong Tian; Yan Zhuang; Wei-Min Wang; Yuan-Lian Wan; Yan-Ting Huang

    2005-01-01

    AIM: To analyze the risk factors for pancreatic leakage after pancreaticoduodenectomy (PD) and to evaluate whether duct-to-mucosa pancreaticojejunostomy could reduce the risk of pancreatic leakage.METHODS: Sixty-two patients who underwent PD at our hospital between January 2000 and November 2003 were reviewed retrospectively. The primary diseases of the patients included pancreas cancer, ampullary cancer, bile duct cancer, islet cell cancer, duodenal cancer, chronic pancreatitis, pancreatic cystadenoma, and gastric cancer.Standard PD was performed for 25 cases, PD with extended lymphadenectomy for 27 cases, pylorus-preserving PD for 10 cases. A duct-to-mucosa pancreaticojejunostomy was performed for patients with a hard pancreas and a dilated pancreatic duct, and a traditional end-to-end invagination pancreaticojejunostomy for patients with a soft pancreas and a non-dilated duct. Patients were divided into two groups according to the incidence of postoperative pancreaticojejunal anastomotic leakage: 10 cases with leakage and 52 cases without leakage. Seven preoperative and six intraoperative risk factors with the potential to affect the incidence of pancreatic leakage were analyzed with SPSS10.0 software. Logistic regression was then used to determine the effect of multiple factors on pancreatic leakage.RESULTS: Of the 62 patients, 10 (16.13%) were identified as having pancreatic leakage after operation. Other major postoperative complications included delayed gastric emptying (eight patients), abdominal bleeding (four patients), abdominal abscess (three patients) and wound infection (two patients). The overall surgical morbidity was 43.5% (27/62). The hospital mortality in this series was 4.84% (3/62), and the mortality associated with pancreatic fistula was 10% (1/10). Sixteen cases underwent duct-to-mucosa pancreaticojejunostomy and 1 case (1/16, 6.25%) devel-oped postoperative pancreatic leakage, 46 cases underwent invagination pancreaticojejunostomy and 9

  1. Current-voltage characteristics simulation and analysis of 4H-SiC metal-semiconductor-metal ultraviolet photodetectors

    Institute of Scientific and Technical Information of China (English)

    Junqin Zhang; Yintang Yang; Lifei Lou; Yan Zhao

    2008-01-01

    The current-voltage (I-V) characteristics of 4H-SiC metal-semiconductor-metal (MSM) ultraviolet pho-todetector with different finger widths and spacings, different carrier concentrations and thicknesses of n-type epitaxial layer are simulated. The simulation results indicate that the dark current and the pho-tocurrent both increase when the finger width increases. But the effect of finger width on the dark current is more significant. On the other hand, the effect of finger spacing on the photocurrent is more significant. When the finger spacing increases, the photocurrent decreases and the dark current is almost changeless. In addition, it is found that the smaller the carrier concentration of n-type epitaxial layer is, the smaller the dark current and the larger the photocurrent wiU be. It is also found that I-V characteristics of MSM detector also depend on the epitaxial layer thickness. The dark current of detector is smaller and the photocurrent is larger when the epitaxial layer thickness is about 3 μm.

  2. Influences of current density on tribological characteristics of ceramic coatings on ZK60 Mg alloy by plasma electrolytic oxidation.

    Science.gov (United States)

    Wu, Xiaohong; Su, Peibo; Jiang, Zhaohua; Meng, Song

    2010-03-01

    Current density is a key factor of plasma electrolytic oxidation process. Its influences on structure, mechanical, and tribological characteristics of ceramic coatings on ZK60 Mg alloy by pulsed bipolar microplasma oxidation in Na(3)PO(4) solution were studied in this paper. Thickness, structure, composition, mechanical property, and tribological characteristics of the coatings were studied by eddy current coating thickness gauge, scanning electron microscope (SEM), X-ray diffraction (XRD), nanoindentation measurements, and ball-on-disk friction testing. The results show that all the coatings prepared under different current densities are composed of MgO phase. The amount of MgO phase, thickness and friction coefficient of the coatings increased with the increasing current density. Among three ceramic coatings produced under three current densities, the coating produced under the current density of 7 A/dm(2) got the highest nanohardness and lowest wear rate with the value of 1.7 GPa and 1.27 x 10(-5) mm(3)/Nm.

  3. Explaining heterogeneity in disability associated with current major depressive disorder: effects of illness characteristics and comorbid mental disorders.

    Science.gov (United States)

    van der Werff, E; Verboom, C E; Penninx, B W J H; Nolen, W A; Ormel, J

    2010-12-01

    Although major depressive disorder (MDD) is associated with disability, some persons do function well despite their illness. Aim of the present study was to examine the effect of illness characteristics and comorbid mental disorders on various aspects of disability among persons with a current MDD episode. Data were derived from 607 participants with a current MDD based on the Composite International Diagnostic Interview (CIDI). Severity was assessed via the Inventory of Depressive Symptoms self-report (IDS-SR). For disability three outcome measures were used: World Health Organization Disability Assessment Schedule II (WHODAS) disability and its 7 dimensions, days out of role, and work absence. Using multiple regression analysis the effects of MDD characteristics and comorbid mental disorders were estimated. The IDS-SR score was the best predictor of all disability outcomes. Of the comorbid mental disorders, agoraphobia was significantly associated with overall disability. Collectively, all illness characteristics accounted for 43% of variance in WHODAS disability, 13% in days out of role and 10% in work absence, suggesting substantial unexplained variance. Only self-report measures of disability were used. There were no assessments of other diagnoses than depressive, anxiety and alcohol use disorders. Although heterogeneity in disability of persons with current MDD is partially explained by illness characteristics of MDD (especially symptom severity) and comorbid mental disorders, most of the variance is not accounted for. Copyright © 2010 Elsevier B.V. All rights reserved.

  4. Air leakage in residential solar heating systems

    Science.gov (United States)

    Shingleton, J. G.; Cassel, D. E.; Overton, R. L.

    1981-02-01

    A series of computer simulations was performed to evaluate the effects of component air leakage on system thermal performance for a typical residential solar heating system, located in Madison, Wisconsin. Auxiliary energy required to supplement solar energy for space heating was determined using the TRNSYS computer program, for a range of air leakage rates at the solar collector and pebble bed storage unit. The effects of heat transfer and mass transfer between the solar equipment room and the heated building were investigated. The effect of reduced air infiltration into the building due to pressurized by the solar air heating system were determined. A simple method of estimating the effect of collector array air leakage on system thermal performance was evaluated, using the f CHART method.

  5. Characteristics of chloride currents activated by noradrenaline in rabbit ear artery cells.

    Science.gov (United States)

    Amédée, T; Large, W A; Wang, Q

    1990-09-01

    1. Responses to noradrenaline were studied in isolated rabbit ear artery cells with the nystatin method of whole-cell patch-clamp recording. With this technique it was possible to obtain reproducible responses to noradrenaline which was not possible with traditional whole-cell recording. 2. With NaCl as the major constituent of the bathing solution (potassium-free pipette and external solutions) the reversal potential (Er) of the noradrenaline-evoked current was about 0 mV. When external chloride was replaced by thiocyanate, iodide, nitrate and bromide, Er was shifted to more negative potentials which indicates that a chloride conductance increase contributes to the current activated by noradrenaline. 3. When sodium was substituted by Tris, N-methyl-D-glucamine, choline or barium, Er of the noradrenaline-evoked current did not alter. This result suggests that a cation conductance is not implicated in the response to noradrenaline recorded with the nystatin method of whole-cell recording. 4. The chloride current activated by noradrenaline was blocked by the selective alpha 1-adrenoceptor antagonist prazosin but was not affected by the alpha 2-adrenoceptor antagonist yohimbine. 5. When cells were exposed to zero calcium bathing solutions the amplitude of the current elicited by noradrenaline was unaffected when measured within 1-2 min in zero calcium conditions. Continued exposure to 0 Ca + 1 mM-EGTA solution reversibly abolished the chloride current to noradrenaline. 6. In the presence of caffeine, which releases Ca2+ from internal stores and itself induced an inward current (at a holding potential of -50 mV), noradrenaline did not elicit a current. These data suggest that the chloride current evoked by noradrenaline results from an increase in intracellular concentration of calcium derived from internal stores. 7. The chloride channel blocking agents 4,4'-diisothiocyanatostilbene-2,2'-disulphonic acid (DIDS; 0.5 mM) and furosemide (0.5 mM) produced partial

  6. Leakage current measurements of a pixelated polycrystalline CVD diamond detector

    OpenAIRE

    Zain, R.M.; Maneuski, D.; O'Shea, V.; Bates, R.; Blue, A.; Cunnigham, L.; Stehl, C.; Berderman, E.; Rahim, R. A.

    2013-01-01

    Diamond has several desirable features when used as a material for radiation detection. With the invention of synthetic growth techniques, it has become feasible to look at developing diamond radiation detectors with reasonable surface areas. Polycrystalline diamond has been grown using a chemical vapour deposition (CVD) technique by the University of Augsburg and detector structures fabricated at the James Watt Nanofabrication Centre (JWNC) in the University of Glasgow in order to produce pi...

  7. Transformerless photovoltaic inverters with leakage current and pulsating power elimination

    DEFF Research Database (Denmark)

    Tang, Yi; Yao, Wenli; Wang, H.;

    2015-01-01

    that is inherent in single-phase PV systems. By properly injecting CM voltages to the output filter capacitors, the pulsating power can be decoupled from the dc-link. Therefore, it is possible to use long lifetime film capacitors instead of electrolytic capacitors to improve the reliability of the PV system...

  8. Leakage current measurements on pixelated CdZnTe detectors

    NARCIS (Netherlands)

    Dirks, B.P.F.; Blondel, C.; Daly, F.; Gevin, O.; Limousin, O.; Lugiez, F.

    2006-01-01

    In the field of the R&D of a new generation hard X-ray cameras for space applications we focus on the use of pixelated CdTe or CdZnTe semiconductor detectors. They are covered with 64 (0.9×0.9 mm2) or 256 (0.5×0.5 mm2) pixels, surrounded by a guard ring and operate in the energy ranging from several

  9. First principle leakage current reduction technique for CMOS devices

    CSIR Research Space (South Africa)

    Tsague, HD

    2015-12-01

    Full Text Available that the device is suitable for low power applications. Physical models used for simulation included SI(sub3)N(sub4) and HfO(sub2) as gate dielectric with TiSix as metal gate. From the simulation result, it was shown that HfO2 was the best dielectric material when...

  10. Current Leakage Evolution in Partially Gate Raptured Power MOSFETs

    Science.gov (United States)

    Scheick, Leif; Edmonds, Larry; Selva, Luis; Chen, Yuan

    2008-01-01

    It has been observed that power MOSFETs can experience an SEGR and continue to function with altered parameters. We propose that there are three different types of SEGR modes; the micro-break, the thermal runaway, and the avalanche breakdown. Data that demonstrates these stages of device failure are presented as well as a proposed model for the micro-break. Brief discussions of the other modes, based on analysis combined with our interpretations of the older literature, are also given.

  11. Leakage behaviors of ferroelectric (Bi{sub 3.15}Nd{sub 0.85})Ti{sub 3}O{sub 12} thin film derived from RF sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Gao, X.S. [South China Normal University, Laboratory for Advanced Materials, School of Physics and Telecommunication Engineering, Guangzhou (China); Wang, J. [National University of Singapore, Department of Materials Science and Engineering, Faculty of Engineering, Singapore (Singapore)

    2011-12-15

    The leakage behaviors of ferroelectric layered-perovskite (Bi{sub 3.15}Nd{sub 0.85})Ti{sub 3}O{sub 12} (BNdT) thin films deposited on Pt/TiO{sub 2}/Ti/Si substrates by RF sputtering have been carefully investigated. Their I-V curves exhibit a rich diversity of conducting behaviors at different temperature and voltage ranges, which may be accounted for by various conducting mechanisms, including Ohmic behavior, Schottky emission, space-charge-limited current (SCLC), and Fowler-Nordheim tunneling effects. Their time-dependent leakage currents show a nearly linear relationship with respect to logarithmic relaxation time at initial stage (<100 s) as can be ascribed to a dielectric relaxation process, while a small cusp appears at prolonged relaxation time (>400 s) showing characteristics of ionic space-charge limit current relaxation. (orig.)

  12. Theoretical aspects and methods of parameters identification of the electric traction system devices. method of cyclic current-voltage characteristics

    Directory of Open Access Journals (Sweden)

    T.M.Mishchenko

    2013-02-01

    Full Text Available Purpose. To define the characteristics of numerical calculations of mathematical model with one or more cyclic current voltage characteristics (CVC. This is an urgent problem, since any electric traction system device and electrified track in general, like non-linear passive or active two-terminal network in the present operating mode is described by current-voltage characteristic (CVC, which is based on the given input voltage and input current. Me-thodology. The electromagnetic process calculation in the power circuits of traction electric energy supply is the probabilistic task with solving nonlinear stochastic differential equations requiring for the development of special methods. Given the calculation difficulty, it is reasonable to perform them either by real CVC graph bypass or initially by applying its equivalent replacement with, for example, an ellipse. Findings. Numerical calculations of the mathematical model with one or more cyclic CVC can be performed by “real” CVC bypass or by "idealization" i. e. approximate replacement of real cyclic CVC. Originality. This paper presents the dynamic CVC of the DS3 and 2ES5K electric locomotives at different currents of electric locomotives. Practical value. Cyclic CVC normally and definitely can be applied in the system of electromagnetic state equations while transient state calculating in the traction system. Therefore while calculating the experimentally obtained CVC for the most “difficult and complex” (or/and the “easiest” mode is applied.

  13. Research of Temperature Tracer Method to Detect Tubular Leakage Passage in Earth-Dam

    Institute of Scientific and Technical Information of China (English)

    WANG Xin-jian; CHEN Jian-sheng

    2006-01-01

    The location, intensity and scope of concentrated leakage must be determined in order to repair earth-Dam scoured by the leakage. In this paper, firstly, heat tracer theory and distribution laws of temperature in soil body with leakage are discussed. Then temperature tracer model is established according to stable heat conduction theory. In such model, the concentrated seepage passage is simplified into a circular pipe as a boundary condition. The location, scope and flow-velocity of the concentrated leakage are estimated via ichnography of the lowest temperature based on temperature data from detecting wells by quantitative computation and qualitative analysis. In case study, the distribution characteristic of temperature (including temperature data of water in reservoir, drainage pipes and tail pond) can be interpreted by this model. A modified model is also set up, applied for detected data at different cross-sections of the leakage passage, in which the temperature data are rectified according to distances from data locations to calculating section. Finally, the model is solved by numerical iterative method, and the possible error of this theoretical model is discussed. The permeability coefficient in leakage area is identical with that of normal soil in magnitude after anti-seepage repairing accomplished, which indicates this model is effective.

  14. COMPUTATIONAL AND EXPERIMENTAL STUDY ON TIP LEAKAGE VORTEX OF CIRCUMFERENTIAL SKEWED BLADES

    Institute of Scientific and Technical Information of China (English)

    LI Yang; OUYANG Hua; DU Zhaohui

    2007-01-01

    In the steady operation condition, the experiments and the numerical simulations are used to investigate the tip leakage flow fields in three low pressure axial flow fans with three kinds of circumferential skewed rotors, including the radial rotor, the forward-skewed rotor and the backward-skewed rotor. The three-dimensional viscous flow fields of the fans are computed. In the experiments, the two-dimensional plane particle image velocimetry (PIV) system is used to measure the flow fields in the tip region of three different pitchwise positions of each fan. The results show that the computational results agree well with the experimental data in the flow field of the tip region of each fan. The tip leakage vortex core segments based on method of the eigenmode analysis can display clearly some characteristics of the tip leakage vortex, such as the origination position of tip leakage vortex, the development of vortex strength, and so on. Compared with the radial rotor, the other two skewed rotors can increase the stability of the tip leakage vortex and the increment in the forward-skewed rotor is more than that in the backward-skewed one. Among the tip leakage vortices of the three rotors, the velocity of the vortex in the forward-skewed rotor is the highest in the circumferential direction and the lowest in the axial direction.

  15. Inward Leakage in Tight-Fitting PAPRs

    Directory of Open Access Journals (Sweden)

    Frank C. Koh

    2011-01-01

    Full Text Available A combination of local flow measurement techniques and fog flow visualization was used to determine the inward leakage for two tight-fitting powered air-purifying respirators (PAPRs, the 3M Breathe-Easy PAPR and the SE 400 breathing demand PAPR. The PAPRs were mounted on a breathing machine head form, and flows were measured from the blower and into the breathing machine. Both respirators leaked a little at the beginning of inhalation, probably through their exhalation valves. In both cases, the leakage was not enough for fog to appear at the mouth of the head form.

  16. Quantifying information leakage of randomized protocols

    DEFF Research Database (Denmark)

    Biondi, Fabrizio; Legay, Axel; Malacaria, Pasquale;

    2015-01-01

    capable to observe the internal behavior of the system, and quantify the information leakage of such systems. We also use our method to obtain an algorithm for the computation of channel capacity from our Markovian models. Finally, we show how to use the method to analyze timed and non-timed attacks......The quantification of information leakage provides a quantitative evaluation of the security of a system. We propose the usage of Markovian processes to model deterministic and probabilistic systems. By using a methodology generalizing the lattice of information approach we model refined attackers...

  17. Quantifying information leakage of randomized protocols

    DEFF Research Database (Denmark)

    Biondi, Fabrizio; Legay, Axel; Malacaria, Pasquale

    2015-01-01

    The quantification of information leakage provides a quantitative evaluation of the security of a system. We propose the usage of Markovian processes to model deterministic and probabilistic systems. By using a methodology generalizing the lattice of information approach we model refined attackers...... capable to observe the internal behavior of the system, and quantify the information leakage of such systems. We also use our method to obtain an algorithm for the computation of channel capacity from our Markovian models. Finally, we show how to use the method to analyze timed and non-timed attacks...

  18. The fundamental characteristics of current in the Bering Strait and the Chukchi Sea from July to September 2003

    Institute of Scientific and Technical Information of China (English)

    LI Lei; DU Ling; ZHAO Jinping; ZUO Juncheng; LI Peiliang

    2005-01-01

    The characteristics of current in the Bering Strait and the Chukchi Sea are analyzed based on the two current data on the mooring stations during the Second National Arctic Research Expedition of China in 2003. The tidal currents of the principal diurnal and semidiurnal ellipses rotate clockwise in the upper layer, except for N2, S2, and Q1 at Sta. ST. In the Bering Strait (Sta. ST), the major semi-axis of tidal current constituent M2 is 2.9 cm/s in the upper layer, which is much smaller than that of semi-monthly oscillation (11.8 cm/s);and the mean current flows northwestward at the amplitude of about 20 cm/s and varies a little with depth. During the cruise, the current has significant semi-monthly oscillation at the two mooring stations. The spectra analyses of the air pressure gradient and the wind stress show that there are the semi-monthly oscillations in these two data series. The near-inertial current, approximately 4 cm/s, presents almost the same magnitude of the principal tidal currents in the Bering Strait.

  19. Characteristics of persistent-current mode of HTS coil on superconducting electromagnet

    Energy Technology Data Exchange (ETDEWEB)

    Lee, C.Y., E-mail: cylee@krri.re.kr [Korea Railroad Research Institute, Woram Dong, Uiwang Si 437-757 (Korea, Republic of); Kim, J.; Han, Y.J.; Kang, B. [Korea Railroad Research Institute, Woram Dong, Uiwang Si 437-757 (Korea, Republic of); Chung, Y.D. [Department of Electrical Engineering, Suwon University, Bongdang Eup, Hwaseong Si 445-743 (Korea, Republic of); Yoon, Y.S. [Department of Electrical Engineering, Ansan College of Technology, Choji-Dong, Ansan Si 425-792 (Korea, Republic of); Chu, S.Y.; Hwang, Y.J.; Jo, H.C.; Jang, J.Y.; Ko, T.K. [Department of Electrical and Electronic Engineering, Yonsei University, Sinchon-dong, Seoul 120-749 (Korea, Republic of)

    2011-11-15

    The levitation gap of an electromagnetic suspension (EMS) system affects the current decay rate of superconducting electromagnet. The presence of iron core provides a significant benefit in the PCM performance of SC coil. The increased levitation gap of the EMS model with the SC-EM could negatively affect the design of SC-EM operated in PCM. This paper investigates the way in which the levitation gap of an electromagnetic suspension (EMS) system affects the current decay rate of superconducting electromagnet (SC-EM) operated in persistence-current mode (PCM). Using inductance analyzed from the magnetic circuit of an EMS model, the current decay rate caused by the variation in the levitation gap was simulated. In order to experimentally verify the simulation results, we fabricated a small-scale EMS model with SC coil operated in PCM and measured the current decay rates at different levitation gaps. The result showed that the presence of iron core provides a significant benefit in the PCM performance of SC coil, but the benefit decreased as the levitation gap increases. This study revealed that the increased levitation gap of the EMS model with the SC-EM could negatively affect the design of SC-EM operated in PCM.

  20. A high fill-factor low dark leakage CMOS image sensor with shared-pixel design

    Science.gov (United States)

    Seo, Min-Woong; Yasutomi, Keita; Kagawa, Keiichiro; Kawahito, Shoji

    2014-03-01

    We have developed and evaluated the high responsivity and low dark leakage CMOS image sensor with the ring-gate shared-pixel design. A ring-gate shared-pixel design with a high fill factor makes it possible to achieve the low-light imaging. As eliminating the shallow trench isolation in the proposed pixel, the dark leakage current is significantly decreased because one of major dark leakage sources is removed. By sharing the in-pixel transistors such as a reset transistor, a select transistor, and a source follower amplifier, each pixel has a high fill-factor of 43 % and high sensitivity of 144.6 ke-/lx·sec. In addition, the effective number of transistors per pixel is 1.75. The proposed imager achieved the relatively low dark leakage current of about 104.5 e-/s (median at 60°C), corresponding to a dark current density Jdark_proposed of about 30 pA/cm2. In contrast, the conventional type test pixel has a large dark leakage current of 2450 e-/s (median at 60°C), corresponding to Jdark_conventional of about 700 pA/cm2. Both pixels have a same pixel size of 7.5×7.5 μm2 and are fabricated in same process.

  1. Modeling the current-voltage characteristics of bilayer polymer photovoltaic devices

    Science.gov (United States)

    Barker, J. A.; Ramsdale, C. M.; Greenham, N. C.

    2003-02-01

    We have developed a numerical model to predict the current-voltage curves of bilayer conjugated polymer photovoltaic devices. The model accounts for charge photogeneration, injection, drift, diffusion, and recombination, and includes the effect of space charge on the electric field within the device. Charge separation at the polymer-polymer interface leads to the formation of bound polaron pairs which may either recombine monomolecularly or be dissociated into free charges, and we develop expressions for the field dependence of the dissociation rate. We find that the short-circuit quantum efficiency is determined by the competition between polaron pair dissociation and recombination. The model shows a logarithmic dependence of the open-circuit voltage on the incident intensity, as seen experimentally. This additional intensity-dependent voltage arises from the field required to produce a drift current that balances the current due to diffusion of carriers away from the interface.

  2. Dynamics of the current filament formation and its steady-state characteristics in chalcogenide based PCM

    Science.gov (United States)

    Bogoslovskiy, Nikita; Tsendin, Konstantin

    2017-03-01

    In the phase-change memory (PCM) crystallization occurs in the high-current filament which forms during switching to the conductive state. In the present paper we conduct a numerical modeling of the current filament formation dynamics in thin chalcogenide films using an electronic-thermal model based on negative-U centers tunnel ionization and Joule heating. The key role of inhomogeneities in the filament formation process is shown. Steady-state filament parameters were obtained from the analysis of the stationary heat conduction equation. The filament formation dynamics and the steady-state filament radius and temperature could be controlled by material parameters and contact resistance. Consequently it is possible to control the size of the region wherein crystallization occurs. A good agreement with numerous experimental data leads to the conclusion that thermal effects play a significant role in CGS conduction and high-current filament formation while switching.

  3. RESEARCH ON DIRECT CURRENT ELECTRIC FIELD CHARACTERISTICS OF OVERBURDEN FAILURE AND ITS APPLICATIONS

    Institute of Scientific and Technical Information of China (English)

    程久龙; 李莉; 于师建

    1999-01-01

    The overburden failure causes the changes of the constant electric field, and the resistivity is the main parameter in these changes. The experimental simulation about the response relation between the overburden failure and its electrical parameter changes is made by building the similar material physics model of mining. The experiment results are used to analyze and test the in-situ detection. The research indicates that the resistivity changes with the electric characteristic of the rock in cracked zone and caving zone caused by overburden failure, the response characteristics of resistivity vary with the failure degrees at different overburden failure zone and that they are corresponding. The resistivity method used in monitoring the overburden failure can determine the height and the affecting scopes of the cracked zone and caving zone. This can provide reliable technological guarantee for mining design and safe production.

  4. Instabilities in the current-voltage characteristics of submicron BSCCO bridges

    Energy Technology Data Exchange (ETDEWEB)

    Zybtsev, S G [Institute of Radioengineering and Electronics RAS Moscow 125009 (Russian Federation); Pokrovskii, V Ya [Institute of Radioengineering and Electronics RAS Moscow 125009 (Russian Federation); Gorlova, I G [Institute of Radioengineering and Electronics RAS Moscow 125009 (Russian Federation); Latyshev, Yu I [Institute of Radioengineering and Electronics RAS Moscow 125009 (Russian Federation); Timofeev, V N [A.A. Baikov Institute of Metallurgy RAS Moscow (Russian Federation)

    2006-06-01

    The influence of magnetic field and microwave irradiation on dynamical phase separation in submicron Bi{sub 2}Sr{sub 2}CaCu{sub 2}O{sub 8+x} bridges has been studied. Strong effect on the shape and metastable character of the step-like I-V characteristics are found. Under a weak field H < 2 Oe and low level microwave irradiation the step-like structure of the I-V characteristics smears out and disappears completely. The average frequency of switching between metastable states grows by 5 orders under increase of magnetic field by only 1 Oe. This behavior is explained in terms of the model of dynamical vortex lines.

  5. Characteristics of burden resistors for high-precision DC current transducers

    CERN Document Server

    Fernqvist, G; Hudson, G; Pickering, J

    2007-01-01

    The DC current transducer (DCCT) and accompanying A/D converter determine the precision of a power converter in accelerator operation. In the LHC context this precision approaches 10-6 (1 ppm). Inside the DCCT a burden resistor is used to convert the current to an output voltage. The performance of this resistor is crucial for the accuracy, temperature behaviour, settling time and longterm drift of the DCCT. This paper reports on evaluations, a new parameter called â€ワpower coefficient” (PC) and test results from some different types of resistors available on the market.

  6. Analytical Model of Subthreshold Drain Current Characteristics of Ballistic Silicon Nanowire Transistors

    Directory of Open Access Journals (Sweden)

    Wanjie Xu

    2015-01-01

    Full Text Available A physically based subthreshold current model for silicon nanowire transistors working in the ballistic regime is developed. Based on the electric potential distribution obtained from a 2D Poisson equation and by performing some perturbation approximations for subband energy levels, an analytical model for the subthreshold drain current is obtained. The model is further used for predicting the subthreshold slopes and threshold voltages of the transistors. Our results agree well with TCAD simulation with different geometries and under different biasing conditions.

  7. The role of current characteristics of the arc evaporator in formation of the surface metal-coating composite

    Science.gov (United States)

    Plikhunov, V. V.; Petrov, L. M.; Grigorovich, K. V.

    2016-07-01

    The influence of current characteristics of the vacuum arc evaporator on the interaction process of plasma streams with the surface under treatment during generation of the physicochemical properties of the formed metal-coating composite is considered. It is shown that the interaction of plasma streams with the processed surface provides surface heating, defects elimination, change in energy properties, and mass transfer of plasma stream elements activating surface diffusion processes whose intensity is evaluated by the arc current magnitude and location of the processed surface relative to the cathode axis.

  8. Analytical form of current-voltage characteristic of parallel-plane, cylindrical and spherical ionization chambers with homogeneous ionization

    Energy Technology Data Exchange (ETDEWEB)

    Stoyanov, D G [Faculty of Engineering and Pedagogy in Sliven, Technical University of Sofia, 59, Bourgasko Shaussee Blvd, 8800 Sliven (Bulgaria)

    2007-11-15

    The elementary processes taking place in the formation of charged particles and their flow in parallel-plane, cylindrical and spherical geometry cases of ionization chamber are considered. On the basis of particles and charges balance a differential equation describing the distribution of current densities in the ionization chamber volume is obtained. As a result of the differential equation solution an analytical form of the current-voltage characteristic of an ionization chamber with homogeneous ionization is obtained. For the parallel-plane case comparision with experimental data is performed.

  9. The Research of Static Var Compensator's Time Characteristics and System-level Model of Controlled Current Source

    Science.gov (United States)

    Zhang, Chao; Jiang, Qi-rong; Sun, Shou-xin

    In the status of lacking research on response time of static var compensator (SVC), this paper established the controlled current source model which can achieve the same effect in response time and reactive compensation with the physical model of SVC by analyzing of characteristics in reactive power compensation and the response of the static var compensator (SVC) physical model. Through the time module in control signal of controlled current source, it can accurately calculate the response time of SVC. It tested the consistency of two models through the simulation of a rolling mill start experiment in PSCAD.

  10. Studies on temperature dependence of current-voltage characteristics of glancing angle deposited indium oxide nanowire on silicon substrate

    Energy Technology Data Exchange (ETDEWEB)

    Mondal, Aniruddha, E-mail: aniruddhamo@gmail.com; Das, Amit Kumar [Department of Physics, National Institute of technology Durgapur, Mahatma Gandhi Rd, A-Zone, Durgapur, West Bengal, India-713209 (India); Dey, Anubhab [Indian Institute of Science Education and Research, Thiruvananthapuram, Computer Science Building, College of Engineering Trivandrum Campus, Thiruvananthapuram, Kerala 695016 (India); Choudhuri, Bijit [Department of Electronics & Communication Engineering, National Institute of Technology Agartala, Jirania, Tripura, India - 799046 (India)

    2016-05-06

    The 1D perpendicular In{sub 2-x}O{sub 3-y} nanostructure arrays have been synthesized by using glancing angle deposition (GLAD) technique. A low deposition rate of 0.5 A°/S produced highly porous structure. The current - voltage characteristics for the In{sub 2-x}O{sub 3-y}nanocolumnar array based were measured through a gold Schottky contact at different temperatures. The temperature dependent ideality factor was calculated from the observed current – voltage characteristics. The ideality factor was found to vary from 4.19 to 2.75 with a variation in temperature from 313 K to 473 K.

  11. Branch structure of IV-characteristics in the capacitively coupled Josephson junctions model with the diffusion current

    Energy Technology Data Exchange (ETDEWEB)

    Shukrinov, Yu.M. [Joint Institute for Nuclear Research, 141980 Dubna (Russian Federation); Physical Technical Institute, Dushanbe 734063 (Tajikistan)], E-mail: shukrinv@theor.jinr.ru; Mahfouzi, F. [Institute for Advanced Studies in Basic Sciences, P.O. Box 45195-1159, Zanjan (Iran, Islamic Republic of); Seidel, P. [Institut fuer Festkorperphysik, Friedrich-Schiller-Universitaet Jena, D-07743 Jena (Germany)

    2007-09-01

    We have solved numerically a system of dynamical equations for the gauge-invariant phase differences between superconducting layers for a stack of N intrinsic junctions and obtained a total branch structure in the current-voltage characteristics (IVC) of the stack. The coupling dependence of the branch's slopes is investigated and demonstrated that the equidistance of the branch structure in capacitively coupled Josephson junctions (CCJJ) model is broken at small values of coupling parameter. Changes in the parameters of the boundary conditions and the use of periodic boundary conditions do not affect this result. In the framework of the CCJJ model with the diffusion current we simulate an experiment and obtain the IV-characteristic with equidistant branch structure at different values of model parameters.

  12. Branch structure of IV-characteristics in the capacitively coupled Josephson junctions model with the diffusion current

    Science.gov (United States)

    Shukrinov, Yu. M.; Mahfouzi, F.; Seidel, P.

    2007-09-01

    We have solved numerically a system of dynamical equations for the gauge-invariant phase differences between superconducting layers for a stack of N intrinsic junctions and obtained a total branch structure in the current-voltage characteristics (IVC) of the stack. The coupling dependence of the branch’s slopes is investigated and demonstrated that the equidistance of the branch structure in capacitively coupled Josephson junctions (CCJJ) model is broken at small values of coupling parameter. Changes in the parameters of the boundary conditions and the use of periodic boundary conditions do not affect this result. In the framework of the CCJJ model with the diffusion current we simulate an experiment and obtain the IV-characteristic with equidistant branch structure at different values of model parameters.

  13. Current amplification and magnetic reconnection at a 3D null point. I - Physical characteristics

    CERN Document Server

    Pontin, D I

    2007-01-01

    The behaviour of magnetic perturbations of an initially potential three-dimensional equilibrium magnetic null point are investigated. The basic components which constitute a typical disturbance are taken to be rotations and shears, in line with previous work. The spine and fan of the null point (the field lines which asymptotically approach or recede from the null) are subjected to such rotational and shear perturbations, using three-dimensional magnetohydrodynamic simulations. It is found that rotations of the fan plane and about the spine lead to current sheets which are spatially diffuse in at least one direction, and form in the locations of the spine and fan. However, shearing perturbations lead to 3D-localised current sheets focused at the null point itself. In addition, rotations are associated with a growth of current parallel to the spine, driving rotational flows and a type of rotational reconnection. Shears, on the other hand, cause a current through the null which is parallel to the fan plane, and...

  14. Inter Annual Variability of the California Current System and Associated Biochemical Characteristics from Prolonged Data Series

    Science.gov (United States)

    2016-06-01

    Huntsberger, D. V., and P. Billingsley, 1973: Regression and Correlation. Elements of Statistical Inference, 3rd ed. Allyn and Bacon, Inc., 218–243. Hu...persistence of California Current Fishes and Benthic Crustaceans: A Marine Drift Paradox. Ecological Monographs, 74, 505–524. Simmons, A. J., G. W

  15. Extracellular acidification elicits a chloride current that shares characteristics with ICl(swell).

    Science.gov (United States)

    Nobles, Muriel; Higgins, Christopher F; Sardini, Alessandro

    2004-11-01

    A Cl- current activated by extracellular acidification, ICl(pHac), has been characterized in various mammalian cell types. Many of the properties of ICl(pHac) are similar to those of the cell swelling-activated Cl- current ICl(swell): ion selectivity (I- > Br- > Cl- > F-), pharmacology [ICl(pHac) is inhibited by 4,4'-diisothiocyanostilbene-2,2'-disulfonic acid (DIDS), 1,9-dideoxyforskolin (DDFSK), diphenylamine-2-carboxylic acid (DPC), and niflumic acid], lack of dependence on intra- or extracellular Ca2+, and presence in all cell types tested. ICl(pHac) differs from ICl(swell) in three aspects: 1) its rate of activation and inactivation is very much more rapid, currents reaching a maximum in seconds rather than minutes; 2) it exhibits a slow voltage-dependent activation in contrast to the fast voltage-dependent activation and time- and voltage-dependent inactivation observed for ICl(swell); and 3) it shows a more pronounced outward rectification. Despite these differences, study of the transition between the two currents strongly suggests that ICl(swell) and ICl(pHac) are related and that extracellular acidification reflects a novel stimulus for activating ICl(swell) that, additionally, alters the biophysical properties of the channel.

  16. Effect of coupling on scheme of hysteresis jumps in current-voltage characteristics of intrinsic Josephson junctions in high- superconductors

    OpenAIRE

    Shukrinov, Yu M.; Mahfouzi, F.

    2005-01-01

    We report the numerical calculations of the current-voltage characteristics of intrinsic Josephson junctions in high- superconductors. The charging effect at superconducting layers is taken into account. A set of equations is used to study the non-linear dynamics of the system. In framework of capacitively coupled Josephson junctions model we obtain the total number of branches using fixed initial conditions for phases and their derivatives. The influence of the coupling constant \\alpha on th...

  17. Protection of window glass from acoustic leakage

    OpenAIRE

    Lych, Sergij; Rakobovchuk, Volodymyr

    2013-01-01

    In a survey was presented an analysis of the most common glass samples on the Ukrainian market on their protection level against leakage of acoustic information. The glass samples were studied by means of roentgen analysis, and the impact of elemental composition of glass according to a laser beam reflection factor was defined.

  18. Geologic Storage of CO2: Leakage Pathways and Environmental Risks

    Science.gov (United States)

    Celia, M. A.; Peters, C. A.; Bachu, S.

    2002-05-01

    of the overall storage scheme and contributes to possible climate change. To characterize these environmental consequences, reliable models of leakage characteristics and rates are needed. While leakage through natural flowpaths in the subsurface may occur, a more likely pathway is leakage through abandoned wells. This may be especially troublesome in mature sedimentary basins, which are often "punctured" by a very large number of exploration and production wells. For example, in the Alberta Basin there are more than 100,000 abandoned wells, the oldest from 1883. The cement used in the completion and abandonment of these wells, historically of variable quality and quantity, most probably has degraded with age and under the effect of formation brines. The cement may degrade even more rapidly when contacted by CO2 and possibly other components in the injection mixture (such as H2S). Cement properties and their modification through time must be understood in order to provide reliable estimates of leakage rates. Those leakage rates must then be linked to models of environmental consequences, and ultimately the entire analysis must be embedded in a probabilistic framework. Such an approach will allow leakage to be addressed rationally in terms of safety and long-term environmental impacts.

  19. Electrochemical characteristics of stainless steel using impressed current cathodic protection in seawater

    Institute of Scientific and Technical Information of China (English)

    Seok-Ki JANG; Min-Su HAN; Seong-Jong KIM

    2009-01-01

    Stainless steels such as STS 304, 316 and 630 are frequently used as shaft materials in small fiber reinforced polymer (FRP) fishing boats. If the shaft material is exposed to a severely corrosive environment such as seawater, it should be protected using appropriate methods. The impressed current cathodic protection was used to inhibit corrosion in shaft materials. In anodic polarization, passivity was remarkably more evident in STS 316 stainless steel than in STS 304 and STS 630. The pitting potentials of STS 304, 316, and 630 stainless steels were 0.30, 0.323, and 0.260 V, respectively. The concentration polarization due to oxygen reduction and activation polarization due to hydrogen generation were evident in the cathodic polarization trends of all three stainless steeds. STS 316 had the lowest current densities in all potential ranges, and STS 630 had the highest. Tafel analysis showed that STS 316 was the most noble in the three. In addition, the corrosion current density was the lowest for STS 316.

  20. A national survey of Rett syndrome: age, clinical characteristics, current abilities, and health.

    Science.gov (United States)

    Cianfaglione, Rina; Clarke, Angus; Kerr, Mike; Hastings, Richard P; Oliver, Chris; Felce, David

    2015-07-01

    As part of a wider study to investigate the behavioral phenotype of a national sample of girls and women with Rett syndrome (RTT) in comparison to a well-chosen contrast group and its relationship to parental well-being, the development, clinical severity, current abilities and health of 91 participants were analyzed in relation to diagnostic, clinical and genetic mutation categories. Early truncating mutations or large deletions were associated with greater severity. Early regression was also associated with greater severity. All three were associated with lower current abilities. Epilepsy and weight, gastrointestinal and bowel problems were common co-morbidities. Participants with classic RTT had greater health problems than those with atypical RTT. A substantial minority of respondents reported fairly frequent signs of possible pain experienced by their relative with RTT. Overall, the study provides new data on the current abilities and general health of people with RTT and adds to the evidence that the severity of the condition and variation of subsequent disability, albeit generally within the profound range, may be related to gene mutation. The presence of certain co-morbidities represents a substantial ongoing need for better health. The experience of pain requires further investigation.