WorldWideScience

Sample records for leakage current characteristics

  1. Leakage current characteristics of the multiple metal alloy nanodot memory

    International Nuclear Information System (INIS)

    Lee, Gae Hun; Lee, Jung Min; Yang, Hyung Jun; Song, Yun Heub; Bea, Ji Chel; Tanaka, Tetsu

    2010-01-01

    The leakage current characteristics of a multiple metal alloy nanodot device for a nonvolatile random access memory using FePt materials are investigated. Several annealing conditions are evaluated and optimized to suppress the leakage current and to better the memory characterisctics. This work confirmed that the annealing condition of 700 .deg. C in a high vacuum ambience (under 1 x 10 -5 Pa) simultaneously provided good cell characteristics from a high dot density of over 1 x 10 13 /cm 2 and a low leakage current. In addition, a smaller nanodot diameter was found to give a lower leakage current for the multiple nanodot memory. Finally, for the proposed annealing condition, the quadruple FePt multiple nanodot memory with a 2-nm dot diameter provided good leakage current characteristics, showing a threshold voltage shift of under 5% at an initial retention stage of 1000 sec.

  2. Reverse leakage current characteristics of InGaN/GaN multiple quantum well ultraviolet/blue/green light-emitting diodes

    Science.gov (United States)

    Zhou, Shengjun; Lv, Jiajiang; Wu, Yini; Zhang, Yuan; Zheng, Chenju; Liu, Sheng

    2018-05-01

    We investigated the reverse leakage current characteristics of InGaN/GaN multiple quantum well (MQW) near-ultraviolet (NUV)/blue/green light-emitting diodes (LEDs). Experimental results showed that the NUV LED has the smallest reverse leakage current whereas the green LED has the largest. The reason is that the number of defects increases with increasing nominal indium content in InGaN/GaN MQWs. The mechanism of the reverse leakage current was analyzed by temperature-dependent current–voltage measurement and capacitance–voltage measurement. The reverse leakage currents of NUV/blue/green LEDs show similar conduction mechanisms: at low temperatures, the reverse leakage current of these LEDs is attributed to variable-range hopping (VRH) conduction; at high temperatures, the reverse leakage current of these LEDs is attributed to nearest-neighbor hopping (NNH) conduction, which is enhanced by the Poole–Frenkel effect.

  3. Modelling of illuminated current–voltage characteristics to evaluate leakage currents in long wavelength infrared mercury cadmium telluride photovoltaic detectors

    International Nuclear Information System (INIS)

    Gopal, Vishnu; Qiu, WeiCheng; Hu, Weida

    2014-01-01

    The current–voltage characteristics of long wavelength mercury cadmium telluride infrared detectors have been studied using a recently suggested method for modelling of illuminated photovoltaic detectors. Diodes fabricated on in-house grown arsenic and vacancy doped epitaxial layers were evaluated for their leakage currents. The thermal diffusion, generation–recombination (g-r), and ohmic currents were found as principal components of diode current besides a component of photocurrent due to illumination. In addition, both types of diodes exhibited an excess current component whose growth with the applied bias voltage did not match the expected growth of trap-assisted-tunnelling current. Instead, it was found to be the best described by an exponential function of the type, I excess  = I r0  + K 1 exp (K 2 V), where I r0 , K 1 , and K 2 are fitting parameters and V is the applied bias voltage. A study of the temperature dependence of the diode current components and the excess current provided the useful clues about the source of origin of excess current. It was found that the excess current in diodes fabricated on arsenic doped epitaxial layers has its origin in the source of ohmic shunt currents. Whereas, the source of excess current in diodes fabricated on vacancy doped epitaxial layers appeared to be the avalanche multiplication of photocurrent. The difference in the behaviour of two types of diodes has been attributed to the difference in the quality of epitaxial layers

  4. Leakage Current Waveforms and Arcing Characteristics of Epoxy Resin for Outdoor Insulators under Clean and Salt Fogs

    Directory of Open Access Journals (Sweden)

    Suwarno

    2008-05-01

    Full Text Available Ceramic outdoor insulators have been used in high voltage transmission lines since long time ago. Due to superiority in their resistance to pollution, recently, polymeric outdoor insulators are widely used. Epoxy resin is one polymer which shows good properties for outdoor insulation. During service, outdoor insulators may severe a certain degree of pollution which may reduce their surface resistance. Leakage current (LC usually increase and degradation may take place. This paper reports experimental results on the leakage current waveforms and arcing characteristics of epoxy resin under clean and salt fog. The samples used are blocks of epoxy resin with dimension of 250 x 50 x 20 mm3. The samples were put in a test chamber with dimension of 900x900x1200 mm3 with controllable humidity and pollution conditions. Clean and salt fog were generated according to IEC 60-1 and 507. The arcing experiment was done with incline plane test in accordance with IEC 587. AC voltage in the range from 5 kV to 50 kV with frequency of 50 Hz was applied. The LC waveforms up to flash over were measured. The magnitudes as well as harmonic content of the LC were analyzed. The correlation between LC waveforms and dry band arching phenomenon was elaborated. Visual observation of the arc on the sample surfaces was observed using a video camera. Experimental results indicated that LC magnitude on clean samples was slightly affected by humidity (RH. However, under salt fog, RH greatly affected the LC magnitude. The flashover voltage of clean samples under salt fog reduced significantly for fog conductivity of more than 1.2 mS/cm. Kaolin-polluted samples under salt fog showed an Ohmic behaviour. The LC magnitude was high and a large discrepancy of LC magnitude was observed for high applied voltage of larger than 25 kV. The largest LC magnitude was observed on salt-kaolin polluted samples under clean fog at high RH. LC waveforms analysis indicated that in general LC waveforms

  5. Stress-induced leakage current characteristics of PMOS fabricated by a new multi-deposition multi-annealing technique with full gate last process

    International Nuclear Information System (INIS)

    Wang Yanrong; Yang Hong; Xu Hao; Luo Weichun; Qi Luwei; Zhang Shuxiang; Wang Wenwu; Zhu Huilong; Zhao Chao; Chen Dapeng; Ye Tianchun; Yan Jiang

    2017-01-01

    In the process of high- k films fabrication, a novel multi deposition multi annealing (MDMA) technique is introduced to replace simple post deposition annealing. The leakage current decreases with the increase of the post deposition annealing (PDA) times. The equivalent oxide thickness (EOT) decreases when the annealing time(s) change from 1 to 2. Furthermore, the characteristics of SILC (stress-induced leakage current) for an ultra-thin SiO 2 /HfO 2 gate dielectric stack are studied systematically. The increase of the PDA time(s) from 1 to 2 can decrease the defect and defect generation rate in the HK layer. However, increasing the PDA times to 4 and 7 may introduce too much oxygen, therefore the type of oxygen vacancy changes. (paper)

  6. Insulator Contamination Forecasting Based on Fractal Analysis of Leakage Current

    Directory of Open Access Journals (Sweden)

    Bing Luo

    2012-07-01

    Full Text Available In this paper, an artificial pollution test is carried out to study the leakage current of porcelain insulators. Fractal theory is adopted to extract the characteristics hidden in leakage current waveforms. Fractal dimensions of the leakage current for the security, forecast and danger zones are analyzed under four types of degrees of contamination. The mean value and the standard deviation of the fractal dimension in the forecast zone are calculated to characterize the differences. The analysis reveals large differences in the fractal dimension of leakage current under different contamination discharge stages and degrees. The experimental and calculation results suggest that the fractal dimension of a leakage current waveform can be used as a new indicator of the discharge process and contamination degree of insulators. The results provide new methods and valid indicators for forecasting contamination flashovers.

  7. Total dose effects on the shallow-trench isolation leakage current characteristics in a 0.35microm SiGe BiCMOS technology

    International Nuclear Information System (INIS)

    Niu, G.; Mathew, S.J.; Banerjee, G.; Cressler, J.D.; Clark, S.D.; Palmer, M.J.; Subbanna, S.

    1999-01-01

    The effects of gamma irradiation on the Shallow-Trench Isolation (STI) leakage currents in a SiGe BiCMOS technology are investigated for the first time, and shown to be strongly dependent on the irradiation gate bias and operating substrate bias. A positive irradiation gate bias significantly enhances the STI leakage, suggesting a strong field assisted nature of the charge buildup process in the STI. Numerical simulations also suggest the existence of fixed positive charges deep in the bulk along the STI/Si interface. A negative substrate bias, however, effectively suppresses the STI leakage, and can be used to eliminate the leakage produced by the charges deep in the bulk under irradiation

  8. Suppression of tunneling leakage current in junctionless nanowire transistors

    International Nuclear Information System (INIS)

    Lou, Haijun; Li, Dan; Dong, Yan; Lin, Xinnan; He, Jin; Yang, Shengqi; Chan, Mansun

    2013-01-01

    In this paper, the characteristics of tunneling leakage current for the dual-material gate junctionless nanowire transistor (DMG-JNT) are investigated by three-dimensional numerical simulations and compared with conventional junctionless nanowire transistor (JNT). The suppression of the tunneling leakage current on the JNT by introducing an energy band step with the DMG structure is verified and presented for the first time. The effects of channel length on the DMG-JNT and the JNT are also studied. Results showed that the tunneling leakage current of the DMG-JNT is two orders smaller than that of the JNT, and further, the DMG-JNT exhibits superior scaling capability. Two key design parameters of the DMG-JNT, control gate ratio (Ra) and work function difference (δW), have been optimized and the optimal ranges of Ra and δW are pointed out. (paper)

  9. Suppression of tunneling leakage current in junctionless nanowire transistors

    Science.gov (United States)

    Lou, Haijun; Li, Dan; Dong, Yan; Lin, Xinnan; He, Jin; Yang, Shengqi; Chan, Mansun

    2013-12-01

    In this paper, the characteristics of tunneling leakage current for the dual-material gate junctionless nanowire transistor (DMG-JNT) are investigated by three-dimensional numerical simulations and compared with conventional junctionless nanowire transistor (JNT). The suppression of the tunneling leakage current on the JNT by introducing an energy band step with the DMG structure is verified and presented for the first time. The effects of channel length on the DMG-JNT and the JNT are also studied. Results showed that the tunneling leakage current of the DMG-JNT is two orders smaller than that of the JNT, and further, the DMG-JNT exhibits superior scaling capability. Two key design parameters of the DMG-JNT, control gate ratio (Ra) and work function difference (δW), have been optimized and the optimal ranges of Ra and δW are pointed out.

  10. Interfacial characteristics and leakage current transfer mechanisms in organometal trihalide perovskite gate-controlled devices via doping of PCBM

    International Nuclear Information System (INIS)

    Wang, Yucheng; Zhang, Yuming; Liu, Yintao; Pang, Tiqiang; Luan, Suzhen; Jia, Renxu; Hu, Ziyang; Zhu, Yuejin

    2017-01-01

    Two types of perovskite (with and without doping of PCBM) based metal-oxide-semiconductor (MOS) gate-controlled devices were fabricated and characterized. The study of the interfacial characteristics and charge transfer mechanisms by doping of PCBM were analyzed by material and electrical measurements. Doping of PCBM does not affect the size and crystallinity of perovskite films, but has an impact on carrier extraction in perovskite MOS devices. The electrical hysteresis observed in capacitance–voltage and current–voltage measurements can be alleviated by doping of PCBM. Experimental results demonstrate that extremely low trap densities are found for the perovskite device without doping, while the doped sample leads to higher density of interface state. Three mechanisms including Ohm’s law, trap-filled-limit (TFL) emission, and child’s law were used to analyze possible charge transfer mechanisms. Ohm’s law mechanism is well suitable for charge transfer of both the perovskite MOS devices under light condition at large voltage, while TFL emission well addresses the behavior of charge transfer under dark at small voltage. This change of charge transfer mechanism is attributed to the impact of the ion drift within perovskites. (paper)

  11. Leakage current measurement in transformerless PV inverters

    DEFF Research Database (Denmark)

    Kerekes, Tamas; Sera, Dezso; Mathe, Laszlo

    2012-01-01

    Photovoltaic (PV) installations have seen a huge increase during the last couple of years. Transformerless PV inverters are gaining more share of the total inverter market, due to their high conversion efficiency, small weight and size. Nevertheless safety should have an important role in case...... of these tranformerless systems, due to the missing galvanic isolation. Leakage and fault current measurement is a key issue for these inverter topologies to be able to comply with the required safety standards. This article presents the test results of two different current measurement sensors that were suggested...

  12. Radiation induced leakage current and stress induced leakage current in ultra-thin gate oxides

    International Nuclear Information System (INIS)

    Ceschia, M.; Paccagnella, A.; Cester, A.; Scarpa, A.

    1998-01-01

    Low-field leakage current has been measured in thin oxides after exposure to ionizing radiation. This Radiation Induced Leakage Current (RILC) can be described as an inelastic tunneling process mediated by neutral traps in the oxide, with an energy loss of about 1 eV. The neutral trap distribution is influenced by the oxide field applied during irradiation, thus indicating that the precursors of the neutral defects are charged, likely being defects associated to trapped holes. The maximum leakage current is found under zero-field condition during irradiation, and it rapidly decreases as the field is enhanced, due to a displacement of the defect distribution across the oxide towards the cathodic interface. The RILC kinetics are linear with the cumulative dose, in contrast with the power law found on electrically stressed devices

  13. Radiation-induced off-state leakage current in commercial power MOSFETs

    International Nuclear Information System (INIS)

    Dodd, Paul Emerson; Shaneyfelt, Marty Ray; Draper, Bruce Leroy; Felix, James Andrew; Schwank, James Ralph; Dalton, Scott Matthew

    2005-01-01

    The total dose hardness of several commercial power MOSFET technologies is examined. After exposure to 20 krad(SiO 2 ) most of the n- and p-channel devices examined in this work show substantial (2 to 6 orders of magnitude) increases in off-state leakage current. For the n-channel devices, the increase in radiation-induced leakage current follows standard behavior for moderately thick gate oxides, i.e., the increase in leakage current is dominated by large negative threshold voltage shifts, which cause the transistor to be partially on even when no bias is applied to the gate electrode. N-channel devices biased during irradiation show a significantly larger leakage current increase than grounded devices. The increase in leakage current for the p-channel devices, however, was unexpected. For the p-channel devices, it is shown using electrical characterization and simulation that the radiation-induced leakage current increase is related to an increase in the reverse bias leakage characteristics of the gated diode which is formed by the drain epitaxial layer and the body. This mechanism does not significantly contribute to radiation-induced leakage current in typical p-channel MOS transistors. The p-channel leakage current increase is nearly identical for both biased and grounded irradiations and therefore has serious implications for long duration missions since even devices which are usually powered off could show significant degradation and potentially fail.

  14. Failure analysis of leakage current in plastic encapsulated packages

    International Nuclear Information System (INIS)

    Hu, S.J.; Cheang, F.T.

    1989-12-01

    Plastic encapsulated packages exhibit high leakage current after a few hundred hours steam pressure pot test. The present study investigates two possible sources of leakage current, the mold compound and the lead frame tape used for taping the lead frame fingers. The results of the study indicate that the leakage current is independent of the frame and is not caused by the mold compound. The data further indicates that it is the ionic contents and acrylic-based adhesive layer of the lead frame tapes which cause the leakage current. To eliminate the leakage current, lead frame tape with low ionic contents and non acrylic-based adhesive should be used. (author). 1 fig., 2 tabs, 3 graphs

  15. Transformerless photovoltaic inverters with leakage current and pulsating power elimination

    DEFF Research Database (Denmark)

    Tang, Yi; Yao, Wenli; Wang, H.

    2015-01-01

    This paper presents a transformerless inverter topology, which is capable of simultaneously solving leakage current and pulsating power issues in grid-connected photovoltaic (PV) systems. Without adding any additional components to the system, the leakage current caused by the PV......-to-ground parasitic capacitance can be bypassed by introducing a common mode (CM) conducting path to the inverter. The resulting ground leakage current is therefore well controlled to be below the regulation limit. Moreover, the proposed inverter can also eliminate the well-known double line frequency pulsating power....... The mechanism of leakage current suppression and the closed-loop control of pulsating power decoupling are discussed in the paper in details. A 500 W prototype was also built and tested in the laboratory, and both simulation and experimental results are finally presented to show the excellent performance...

  16. Reducing leakage current in semiconductor devices

    Energy Technology Data Exchange (ETDEWEB)

    Lu, Bin; Matioli, Elison de Nazareth; Palacios, Tomas Apostol

    2018-03-06

    A semiconductor device includes a first region having a first semiconductor material and a second region having a second semiconductor material. The second region is formed over the first region. The semiconductor device also includes a current blocking structure formed in the first region between first and second terminals of the semiconductor device. The current blocking structure is configured to reduce current flow in the first region between the first and second terminals.

  17. Accurate characterization of organic thin film transistors in the presence of gate leakage current

    Directory of Open Access Journals (Sweden)

    Vinay K. Singh

    2011-12-01

    Full Text Available The presence of gate leakage through polymer dielectric in organic thin film transistors (OTFT prevents accurate estimation of transistor characteristics especially in subthreshold regime. To mitigate the impact of gate leakage on transfer characteristics and allow accurate estimation of mobility, subthreshold slope and on/off current ratio, a measurement technique involving simultaneous sweep of both gate and drain voltages is proposed. Two dimensional numerical device simulation is used to illustrate the validity of the proposed technique. Experimental results obtained with Pentacene/PMMA OTFT with significant gate leakage show a low on/off current ratio of ∼ 102 and subthreshold is 10 V/decade obtained using conventional measurement technique. The proposed technique reveals that channel on/off current ratio is more than two orders of magnitude higher at ∼104 and subthreshold slope is 4.5 V/decade.

  18. Parametrization of the radiation induced leakage current increase of NMOS transistors

    International Nuclear Information System (INIS)

    Backhaus, M.

    2017-01-01

    The increase of the leakage current of NMOS transistors during exposure to ionizing radiation is known and well studied. Radiation hardness by design techniques have been developed to mitigate this effect and have been successfully used. More recent developments in smaller feature size technologies do not make use of these techniques due to their drawbacks in terms of logic density and requirement of dedicated libraries. During operation the resulting increase of the supply current is a serious challenge and needs to be considered during the system design. A simple parametrization of the leakage current of NMOS transistors as a function of total ionizing dose is presented. The parametrization uses a transistor transfer characteristics of the parasitic transistor along the shallow trench isolation to describe the leakage current of the nominal transistor. Together with a parametrization of the number of positive charges trapped in the silicon dioxide and number of activated interface traps in the silicon to silicon dioxide interface the leakage current results as a function of the exposure time to ionizing radiation. This function is fitted to data of the leakage current of single transistors as well as to data of the supply current of full ASICs.

  19. Parametrization of the radiation induced leakage current increase of NMOS transistors

    CERN Document Server

    Backhaus, Malte

    2017-01-13

    The increase of the leakage current of NMOS transistors during exposure to ionizing radiation is known and well studied. Radiation hardness by design techniques have been developed to mitigate this effect and have been successfully used. More recent developments in smaller feature size technologies do not make use of these techniques due to their drawbacks in terms of logic density and requirement of dedicated libraries. During operation the resulting increase of the supply current is a serious challenge and needs to be considered during the system design. A simple parametrization of the leakage current of NMOS transistors as a function of total ionizing dose is presented. The parametrization uses a transistor transfer characteristics of the parasitic transistor along the shallow trench isolation to describe the leakage current of the nominal transistor. Together with a parametrization of the number of positive charges trapped in the silicon dioxide and number of activated interface traps in the silicon to si...

  20. Correlation among ESDD, NSDD and leakage current in distribution insulators

    International Nuclear Information System (INIS)

    Montoya, G.; Ramirez, I.; Montoya, J.I.

    2004-01-01

    The maintenance of distribution networks is more effective if the insulation contamination levels are known. The selection of measuring methods of pollution levels is then crucial. The relationship between several evaluation methods of pollution levels and the operating behaviour of several insulator profiles in a polluted zone is described. Laboratory tests were carried out to reproduce pollution levels found in the field. The quantity of non-soluble materials deposited over the insulators' surface affect the magnitude of the leakage current generated over a contaminated insulator. The relationship that defines leakage current with respect to the equivalent salt deposit density (ESDD) level for a specific non-soluble material level is almost linear, from which it is possible to develop a relationship between them for each insulator. (author)

  1. Low-leakage, high-current power crowbar transformer

    International Nuclear Information System (INIS)

    Buck, R.T.; Galbraith, J.D.; Nunnally, W.C.

    1979-01-01

    The design, fabrication, and testing of two sizes of power crowbar transformers for the ZT-40 Toroidal Z-Pinch experiment at the Los Alamos Scientific Laboratory are described. Low-leakage transformers in series with the poloidal and the toroidal field coils are used to sustain magnetic field currents initially produced by 50-kV capacitor banks. The transformer primaries are driven by cost-effective, ignitron-switched, 10-kV high-density capacitor banks. The transformer secondaries, in series with the field coils, provide from 1,000 to 1,500 V to cancel the resistive voltage drop in the coil circuits. Prototype transformers, with a total leakage inductance measured in the secondary of 5 nH, have been tested with peak secondary currents in excess of 600 kA resulting from a 10-kV primary charge voltage. The test procedures and results and the mechanical construction details are presented

  2. Leakage current measurements on pixelated CdZnTe detectors

    International Nuclear Information System (INIS)

    Dirks, B.P.F.; Blondel, C.; Daly, F.; Gevin, O.; Limousin, O.; Lugiez, F.

    2006-01-01

    In the field of the R and D of a new generation hard X-ray cameras for space applications we focus on the use of pixelated CdTe or CdZnTe semiconductor detectors. They are covered with 64 (0.9x0.9 mm 2 ) or 256 (0.5x0.5 mm 2 ) pixels, surrounded by a guard ring and operate in the energy ranging from several keV to 1 MeV, at temperatures between -20 and +20 o C. A critical parameter in the characterisation of these detectors is the leakage current per pixel under polarisation (∼50-500 V/mm). In operation mode each pixel will be read-out by an integrated spectroscopy channel of the multi-channel IDeF-X ASIC currently developed in our lab. The design and functionality of the ASIC depends directly on the direction and value of the current. A dedicated and highly insulating electronics circuit is designed to automatically measure the current in each individual pixel, which is in the order of tens of pico-amperes. Leakage current maps of different CdZnTe detectors of 2 and 6 mm thick and at various temperatures are presented and discussed. Defect density diagnostics have been performed by calculation of the activation energy of the material

  3. A Labview Based Leakage Current Monitoring System For HV Insulators

    Directory of Open Access Journals (Sweden)

    N. Mavrikakis

    2015-10-01

    Full Text Available In this paper, a Labview based leakage current monitoring system for High Voltage insulators is described. The system uses a general purpose DAQ system with the addition of different current sensors. The DAQ system consists of a chassis and hot-swappable modules. Through the proper design of current sensors, low cost modules operating with a suitable input range can be employed. Fully customizable software can be developed using Labview, allowing on-demand changes and incorporation of upgrades. Such a system provides a low cost alternative to specially designed equipment with the added advantage of maximum flexibility. Further, it can be modified to satisfy the specifications (technical and economical set under different scenarios. In fact, the system described in this paper has already been installed in the HV Lab of the TEI of Crete whereas a variation of it is currently in use in TALOS High Voltage Test Station.

  4. Effect of the critical current density and the junction size on the leakage current of Nb/Al-AlOx/Nb superconducting tunnel junctions for radiation detection

    International Nuclear Information System (INIS)

    Joosse, K.; Nakagawa, Hiroshi; Akoh, Hiroshi; Takada, Susumu; Maehata, Keisuke; Ishibashi, Kenji.

    1996-01-01

    Nb/Al-AlO x /Nb superconducting tunnel junctions (STJ's) designed for X-ray detection have been fabricated. The behavior of the low-temperature subgap leakage current, which severely limits the energy resolution obtained in such devices, is investigated. From trends in the dependence of the leakage currents on the critical current density and the size of the STJ, as well as from the low-temperature current-voltage characteristics, and an analysis of the base electrode surface morphology, it is concluded that physical defects in the barrier region are the most probable cause of the leakage currents. Suggestions are given for optimization of the device processing. (author)

  5. Modeling of leakage currents in high-k dielectrics

    International Nuclear Information System (INIS)

    Jegert, Gunther Christian

    2012-01-01

    Leakage currents are one of the major bottlenecks impeding the downscaling efforts of the semiconductor industry. Two core devices of integrated circuits, the transistor and, especially, the DRAM storage capacitor, suffer from the increasing loss currents. In this perspective a fundamental understanding of the physical origin of these leakage currents is highly desirable. However, the complexity of the involved transport phenomena so far has prevented the development of microscopic models. Instead, the analysis of transport through the ultra-thin layers of high-permittivity (high-k) dielectrics, which are employed as insulating layers, was carried out at an empirical level using simple compact models. Unfortunately, these offer only limited insight into the physics involved on the microscale. In this context the present work was initialized in order to establish a framework of microscopic physical models that allow a fundamental description of the transport processes relevant in high-k thin films. A simulation tool that makes use of kinetic Monte Carlo techniques was developed for this purpose embedding the above models in an environment that allows qualitative and quantitative analyses of the electronic transport in such films. Existing continuum approaches, which tend to conceal the important physics behind phenomenological fitting parameters, were replaced by three-dimensional transport simulations at the level of single charge carriers. Spatially localized phenomena, such as percolation of charge carriers across pointlike defects, being subject to structural relaxation processes, or electrode roughness effects, could be investigated in this simulation scheme. Stepwise a self-consistent, closed transport model for the TiN/ZrO 2 material system, which is of outmost importance for the semiconductor industry, was developed. Based on this model viable strategies for the optimization of TiN/ZrO 2 /TiN capacitor structures were suggested and problem areas that may

  6. Modeling of leakage currents in high-k dielectrics

    Energy Technology Data Exchange (ETDEWEB)

    Jegert, Gunther Christian

    2012-03-15

    Leakage currents are one of the major bottlenecks impeding the downscaling efforts of the semiconductor industry. Two core devices of integrated circuits, the transistor and, especially, the DRAM storage capacitor, suffer from the increasing loss currents. In this perspective a fundamental understanding of the physical origin of these leakage currents is highly desirable. However, the complexity of the involved transport phenomena so far has prevented the development of microscopic models. Instead, the analysis of transport through the ultra-thin layers of high-permittivity (high-k) dielectrics, which are employed as insulating layers, was carried out at an empirical level using simple compact models. Unfortunately, these offer only limited insight into the physics involved on the microscale. In this context the present work was initialized in order to establish a framework of microscopic physical models that allow a fundamental description of the transport processes relevant in high-k thin films. A simulation tool that makes use of kinetic Monte Carlo techniques was developed for this purpose embedding the above models in an environment that allows qualitative and quantitative analyses of the electronic transport in such films. Existing continuum approaches, which tend to conceal the important physics behind phenomenological fitting parameters, were replaced by three-dimensional transport simulations at the level of single charge carriers. Spatially localized phenomena, such as percolation of charge carriers across pointlike defects, being subject to structural relaxation processes, or electrode roughness effects, could be investigated in this simulation scheme. Stepwise a self-consistent, closed transport model for the TiN/ZrO{sub 2} material system, which is of outmost importance for the semiconductor industry, was developed. Based on this model viable strategies for the optimization of TiN/ZrO{sub 2}/TiN capacitor structures were suggested and problem areas

  7. Simulation of leakage current measurement on medical devices using helmholtz coil configuration with different current flow

    Science.gov (United States)

    Sutanto, E.; Chandra, F.; Dinata, R.

    2017-05-01

    Leakage current measurement which can follow IEC standard for medical device is one of many challenges to be answered. The IEC 60601-1 has defined that the limit for a leakage current for Medical Device can be as low as 10 µA and as high as 500 µA, depending on which type of contact (applied part) connected to the patient. Most people are using ELCB (Earth-leakage circuit breaker) for safety purpose as this is the most common and available safety device in market. One type of ELCB devices is RCD (Residual Current Device) and this RCD type can measure the leakage current directly. This work will show the possibility on how Helmholtz Coil Configuration can be made to be like the RCD. The possibility is explored by comparing the magnetic field formula from each device, then it proceeds with a simulation using software EJS (Easy Java Simulation). The simulation will make sure the concept of magnetic field current cancellation follows the RCD concept. Finally, the possibility of increasing the measurement’s sensitivity is also analyzed. The sensitivity is needed to see the possibility on reaching the minimum leakage current limit defined by IEC, 0.01mA.

  8. Simulation of leakage current measurement on medical devices using helmholtz coil configuration with different current flow

    International Nuclear Information System (INIS)

    Sutanto, E; Chandra, F; Dinata, R

    2017-01-01

    Leakage current measurement which can follow IEC standard for medical device is one of many challenges to be answered. The IEC 60601-1 has defined that the limit for a leakage current for Medical Device can be as low as 10 µA and as high as 500 µA, depending on which type of contact (applied part) connected to the patient. Most people are using ELCB (Earth-leakage circuit breaker) for safety purpose as this is the most common and available safety device in market. One type of ELCB devices is RCD (Residual Current Device) and this RCD type can measure the leakage current directly. This work will show the possibility on how Helmholtz Coil Configuration can be made to be like the RCD. The possibility is explored by comparing the magnetic field formula from each device, then it proceeds with a simulation using software EJS (Easy Java Simulation). The simulation will make sure the concept of magnetic field current cancellation follows the RCD concept. Finally, the possibility of increasing the measurement’s sensitivity is also analyzed. The sensitivity is needed to see the possibility on reaching the minimum leakage current limit defined by IEC, 0.01mA. (paper)

  9. Initial leakage current paths in the vertical-type GaN-on-GaN Schottky barrier diodes

    Science.gov (United States)

    Sang, Liwen; Ren, Bing; Sumiya, Masatomo; Liao, Meiyong; Koide, Yasuo; Tanaka, Atsushi; Cho, Yujin; Harada, Yoshitomo; Nabatame, Toshihide; Sekiguchi, Takashi; Usami, Shigeyoshi; Honda, Yoshio; Amano, Hiroshi

    2017-09-01

    Electrical characteristics of leakage current paths in vertical-type n-GaN Schottky barrier diodes (SBDs) on free-standing GaN substrates are investigated by using photon emission microscopy (PEM). The PEM mapping shows that the initial failure of the SBD devices at low voltages is due to the leakage current paths from polygonal pits in the GaN epilayers. It is observed that these polygonal pits originate from carbon impurity accumulation to the dislocations with a screw-type component by microstructure analysis. For the SBD without polygonal pits, no initial failure is observed and the first leakage appeals at the edge of electrodes as a result of electric field concentration. The mechanism of leakage at pits is explained in terms of trap assisted tunneling through fitting current-voltage characteristics.

  10. Fluorine-plasma surface treatment for gate forward leakage current reduction in AlGaN/GaN HEMTs

    International Nuclear Information System (INIS)

    Chen Wanjun; Zhang Jing; Zhang Bo; Chen, Kevin Jing

    2013-01-01

    The gate forward leakage current in AlGaN/GaN high electron mobility transistors (HEMTs) is investigated. It is shown that the current which originated from the forward biased Schottky-gate contributed to the gate forward leakage current. Therefore, a fluorine-plasma surface treatment is presented to induce the negative ions into the AlGaN layer which results in a higher metal—semiconductor barrier. Consequently, the gate forward leakage current shrinks. Experimental results confirm that the gate forward leakage current is decreased by one order magnitude lower than that of HEMT device without plasma treatment. In addition, the DC characteristics of the HEMT device with plasma treatment have been studied. (semiconductor devices)

  11. Improving off-state leakage characteristics for high voltage AlGaN/GaN-HFETs on Si substrates

    Science.gov (United States)

    Moon, Sung-Woon; Twynam, John; Lee, Jongsub; Seo, Deokwon; Jung, Sungdal; Choi, Hong Goo; Shim, Heejae; Yim, Jeong Soon; Roh, Sungwon D.

    2014-06-01

    We present a reliable process and design technique for realizing high voltage AlGaN/GaN hetero-junction field effect transistors (HFETs) on Si substrates with very low and stable off-state leakage current characteristics. In this work, we have investigated the effects of the surface passivation layer, prepared by low pressure chemical vapor deposition (LPCVD) of silicon nitride (SiNx), and gate bus isolation design on the off-state leakage characteristics of metal-oxide-semiconductor (MOS) gate structure-based GaN HFETs. The surface passivated devices with gate bus isolation fully surrounding the source and drain regions showed extremely low off-state leakage currents of less than 20 nA/mm at 600 V, with very small variation. These techniques were successfully applied to high-current devices with 80-mm gate width, yielding excellent off-state leakage characteristics within a drain voltage range 0-700 V.

  12. Influence of process parameters on threshold voltage and leakage current in 18nm NMOS device

    Science.gov (United States)

    Atan, Norani Binti; Ahmad, Ibrahim Bin; Majlis, Burhanuddin Bin Yeop; Fauzi, Izzati Binti Ahmad

    2015-04-01

    The process parameters are very crucial factor in the development of transistors. There are many process parameters that influenced in the development of the transistors. In this research, we investigate the effects of the process parameters variation on response characteristics such as threshold voltage (VTH) and sub-threshold leakage current (IOFF) in 18nm NMOS device. The technique to identify semiconductor process parameters whose variability would impact most on the device characteristic is realized through the process by using Taguchi robust design method. This paper presents the process parameters that influenced in threshold voltage (VTH) and sub-threshold leakage current (IOFF) which includes the Halo Implantation, Compensation Implantation, Adjustment Threshold voltage Implantation and Source/Drain Implantation. The design, fabrication and characterization of 18nm HfO2/TiSi2 NMOS device is simulated and performed via a tool called Virtual Wafer Fabrication (VWF) Silvaco TCAD Tool known as ATHENA and ATLAS simulators. These two simulators were combined with Taguchi L9 Orthogonal method to aid in the design and the optimization of the process parameters to achieve the optimum average of threshold voltage (VTH) and sub-threshold leakage current, (IOFF) in 18nm device. Results from this research were obtained; where Halo Implantation dose was identified as one of the process parameter that has the strongest effect on the response characteristics. Whereby the Compensation Implantation dose was identified as an adjustment factor to get the nominal values of threshold voltage VTH, and sub-threshold leakage current, IOFF for 18nm NMOS devices equal to 0.302849 volts and 1.9123×10-16 A/μm respectively. The design values are referred to ITRS 2011 prediction.

  13. Modelling of Leakage Current Through Double Dielectric Gate Stack in Metal Oxide Semiconductor Capacitor

    International Nuclear Information System (INIS)

    Fatimah A Noor; Mikrajuddin Abdullah; Sukirno; Khairurrijal

    2008-01-01

    In this paper, we have derived analytical expression of leakage current through double barriers in Metal Oxide Semiconductor (MOS) capacitor. Initially, electron transmittance through the MOS capacitor was derived by including the coupling between the transverse and longitudinal energies. The transmittance was then employed to obtain leakage current through the double barrier. In this model, we observed the effect of electron velocity due to the coupling effect and the oxide thickness to the leakage current. The calculated results showed that the leakage current decreases as the electron velocity increases. (author)

  14. Single phase cascaded H5 inverter with leakage current elimination for transformerless photovoltaic system

    DEFF Research Database (Denmark)

    Guo, Xiaoqiang; Jia, X.; Lu, Z.

    2016-01-01

    Leakage current reduction is one of the important issues for the transformelress PV systems. In this paper, the transformerless single-phase cascaded H-bridge PV inverter is investigated. The common mode model for the cascaded H4 inverter is analyzed. And the reason why the conventional cascade H4...... inverter fails to reduce the leakage current is clarified. In order to solve the problem, a new cascaded H5 inverter is proposed to solve the leakage current issue. Finally, the experimental results are presented to verify the effectiveness of the proposed topology with the leakage current reduction...... for the single-phase transformerless PV systems....

  15. Leakage Current Elimination of Four-Leg Inverter for Transformerless Three-Phase PV Systems

    DEFF Research Database (Denmark)

    Guo, Xiaoqiang; He, Ran; Jian, Jiamin

    2016-01-01

    Eliminating the leakage current is one of the most important issues for transformerless three phase photovoltaic (PV) systems. In this paper, the leakage current elimination of a three-phase four-leg PV inverter is investigated. With the common mode loop model established, the generation mechanism...... of the leakage current is clearly identified. Different typical carrier-based modulation methods and their corresponding common mode voltages are discussed. A new modulation strategy with Boolean logic function is proposed to achieve the constant common mode voltage for the leakage current reduction. Finally...

  16. Leakage Current Degradation Due to Ion Drift and Diffusion in Tantalum and Niobium Oxide Capacitors

    Directory of Open Access Journals (Sweden)

    Kuparowitz Martin

    2017-06-01

    Full Text Available High temperature and high electric field applications in tantalum and niobium capacitors are limited by the mechanism of ion migration and field crystallization in a tantalum or niobium pentoxide insulating layer. The study of leakage current (DCL variation in time as a result of increasing temperature and electric field might provide information about the physical mechanism of degradation. The experiments were performed on tantalum and niobium oxide capacitors at temperatures of about 125°C and applied voltages ranging up to rated voltages of 35 V and 16 V for tantalum and niobium oxide capacitors, respectively. Homogeneous distribution of oxygen vacancies acting as positive ions within the pentoxide layer was assumed before the experiments. DCL vs. time characteristics at a fixed temperature have several phases. At the beginning of ageing the DCL increases exponentially with time. In this period ions in the insulating layer are being moved in the electric field by drift only. Due to that the concentration of ions near the cathode increases producing a positively charged region near the cathode. The electric field near the cathode increases and the potential barrier between the cathode and insulating layer decreases which results in increasing DCL. However, redistribution of positive ions in the insulator layer leads to creation of a ion concentration gradient which results in a gradual increase of the ion diffusion current in the direction opposite to the ion drift current component. The equilibrium between the two for a given temperature and electric field results in saturation of the leakage current value. DCL vs. time characteristics are described by the exponential stretched law. We found that during the initial part of ageing an exponent n = 1 applies. That corresponds to the ion drift motion only. After long-time application of the electric field at a high temperature the DCL vs. time characteristics are described by the exponential

  17. Insulation Resistance and Leakage Currents in Low-Voltage Ceramic Capacitors with Cracks

    Science.gov (United States)

    Teverovsky, Alexander A.

    2016-01-01

    Measurement of insulation resistance (IR) in multilayer ceramic capacitors (MLCCs) is considered a screening technique that ensures the dielectric is defect-free. This work analyzes the effectiveness of this technique for revealing cracks in ceramic capacitors. It is shown that absorption currents prevail over the intrinsic leakage currents during standard IR measurements at room temperature. Absorption currents, and consequently IR, have a weak temperature dependence, increase linearly with voltage (before saturation), and are not sensitive to the presence of mechanical defects. In contrary, intrinsic leakage currents increase super-linearly with voltage and exponentially with temperature (activation energy is in the range from 0.6 eV to 1.1 eV). Leakage currents associated with the presence of cracks have a weaker dependence on temperature and voltage compared to the intrinsic leakage currents. For this reason, intrinsic leakage currents prevail at high temperatures and voltages, thus masking the presence of defects.

  18. First principle leakage current reduction technique for CMOS devices

    CSIR Research Space (South Africa)

    Tsague, HD

    2015-12-01

    Full Text Available This paper presents a comprehensive study of leakage reduction techniques applicable to CMOS based devices. In the process, mathematical equations that model the power-performance trade-offs in CMOS logic circuits are presented. From those equations...

  19. Leakage current analysis of single-phase transformer-less grid-connected PV inverters

    DEFF Research Database (Denmark)

    Ma, Lin; Kerekes, Tamas; Teodorescu, Remus

    2016-01-01

    Transformer-less string PV inverter is getting more and more widely utilized due to its higher efficiency, smaller volume and weight. However, without the galvanic isolation, the leakage current limitation and operation safety became the key issues of transformer-less inverters. This paper...... simplifies the leakage current generation circuit model and presents a leakage current estimation method both in real time and frequency domain. It shows that the leakage current is related to the circuit stray parameters, output filter and common mode voltage. Furthermore, with the proposed analysis method......, the leakage current generation of H-bridge with different modulation methods and HERIC inverter are discussed individually. At last, the presented method has been verified via simulation....

  20. Space Vector Modulation Technique to Reduce Leakage Current of a Transformerless Three-Phase Four-Leg Photovoltaic System

    Directory of Open Access Journals (Sweden)

    F. Hasanzad

    2017-06-01

    Full Text Available Photovoltaic systems integrated to the grid have received considerable attention around the world. They can be connected to the electrical grid via galvanic isolation (transformer or without it (transformerless. Despite making galvanic isolation, low frequency transformer increases size, cost and losses. On the other hand, transformerless PV systems increase the leakage current (common-mode current, (CMC through the parasitic capacitors of the PV array. Inverter topology and switching technique are the most important parameters the leakage current depends on. As there is no need to extra hardware for switching scheme modification, it's an economical method for reducing leakage current. This paper evaluates the effect of different space vector modulation techniques on leakage current for a two-level three-phase four-leg inverter used in PV system. It proposes an efficient space vector modulation method which decreases the leakage current to below the quantity specified in VDE-0126-1-1 standard. furthermore, some other characteristics of the space vector modulation schemes that have not been significantly discussed for four-leg inverter, are considered, such as, modulation index, switching actions per period, common-mode voltage (CMV, and total harmonic distortion (THD. An extend software simulation using MATLAB/Simulink is performed to verify the effectiveness of the modulation technique.

  1. Conduction mechanism of leakage current due to the traps in ZrO2 thin film

    Science.gov (United States)

    Seo, Yohan; Lee, Sangyouk; An, Ilsin; Song, Chulgi; Jeong, Heejun

    2009-11-01

    In this work, a metal-oxide-semiconductor capacitor with zirconium oxide (ZrO2) gate dielectric was fabricated by an atomic layer deposition (ALD) technique and the leakage current characteristics under negative bias were studied. From the result of current-voltage curves there are two possible conduction mechanisms to explain the leakage current in the ZrO2 thin film. The dominant mechanism is the space charge limited conduction in the high-electric field region (1.5-5.0 MV cm-1) while the trap-assisted tunneling due to the existence of traps is prevailed in the low-electric field region (0.8-1.5 MV cm-1). Conduction caused by the trap-assisted tunneling is found from the experimental results of a weak temperature dependence of current, and the trap barrier height is obtained. The space charge limited conduction is evidenced, for different temperatures, by Child's law dependence of current density versus voltage. Child's law dependence can be explained by considering a single discrete trapping level and we can obtain the activation energy of 0.22 eV.

  2. A new on-line leakage current monitoring system of ZnO surge arresters

    International Nuclear Information System (INIS)

    Lee, Bok-Hee; Kang, Sung-Man

    2005-01-01

    This paper presents a new on-line leakage current monitoring system of zinc oxide (ZnO) surge arresters. To effectively diagnose the deterioration of ZnO surge arresters, a new algorithm and on-line leakage current detection device, which uses the time-delay addition method, for discriminating the resistive and capacitive currents was developed to use in the aging test and durability evaluation for ZnO arrester blocks. A computer-based measurement system of the resistive leakage current, the on-line monitoring device can detect accurately the leakage currents flowing through ZnO surge arresters for power frequency ac applied voltages. The proposed on-line leakage current monitoring device of ZnO surge arresters is more highly sensitive and gives more linear response than the existing devices using the detection method of the third harmonic leakage currents. Therefore, the proposed leakage current monitoring device can be useful for predicting the defects and performance deterioration of ZnO surge arresters in power system applications

  3. Conduction mechanism of leakage current due to the traps in ZrO2 thin film

    International Nuclear Information System (INIS)

    Seo, Yohan; Lee, Sangyouk; An, Ilsin; Jeong, Heejun; Song, Chulgi

    2009-01-01

    In this work, a metal-oxide-semiconductor capacitor with zirconium oxide (ZrO 2 ) gate dielectric was fabricated by an atomic layer deposition (ALD) technique and the leakage current characteristics under negative bias were studied. From the result of current–voltage curves there are two possible conduction mechanisms to explain the leakage current in the ZrO 2 thin film. The dominant mechanism is the space charge limited conduction in the high-electric field region (1.5–5.0 MV cm −1 ) while the trap-assisted tunneling due to the existence of traps is prevailed in the low-electric field region (0.8–1.5 MV cm −1 ). Conduction caused by the trap-assisted tunneling is found from the experimental results of a weak temperature dependence of current, and the trap barrier height is obtained. The space charge limited conduction is evidenced, for different temperatures, by Child's law dependence of current density versus voltage. Child's law dependence can be explained by considering a single discrete trapping level and we can obtain the activation energy of 0.22 eV

  4. Process effects on leakage current of Si-PIN neutron detectors with porous microstructure

    Energy Technology Data Exchange (ETDEWEB)

    Yu, Baoning; Zhao, Kangkang; Yang, Taotao [Beijing University of Technology, Chaoyang District, Pingleyuan 100, 100124 Beijing (China); Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Ruoshui Road 398, 215123 Suzhou (China); Jiang, Yong; Fan, Xiaoqiang [Institute of Nuclear Physics and Chemistry, CAEP, Mianshan Road 64, 621900 Mianyang (China); Lu, Min [Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Ruoshui Road 398, 215123 Suzhou (China); Han, Jun [Beijing University of Technology, Chaoyang District, Pingleyuan 100, 100124 Beijing (China)

    2017-06-15

    Using the technique of Microfabrication, such as deep silicon dry etching, lithography, etc. Si-PIN neutron detectors with porous microstructure have been successfully fabricated. In order to lower the leakage current, the key fabrication processes, including the Al windows opening, deep silicon etching and the porous side wall smoothing, have been optimized. The cross-section morphology and current-voltage characteristics have been measured to evaluate the microfabrication processes. With the optimized conditions presented by the measurements, a neutron detector with a leakage current density of 2.67 μA cm{sup -2} at a bias of -20 V is obtained. A preliminary neutron irradiation test with {sup 252}Cf neutron source has also been carried out. The neutron irradiation test shows that the neutron detection efficiency of the microstructured neutron detectors is almost 3.6 times higher than that of the planar ones. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  5. The influence of interband tunneling on leakage current in manganite/titanate heterojunction

    International Nuclear Information System (INIS)

    Han Peng; Jia Jinfeng

    2008-01-01

    The behavior of leakage current at reverse bias in p-La 0.9 Sr 0.1 MnO 3 /n-SrNb 0.01 Ti 0.99 O 3 heterojunction has been theoretically studied by calculating interband tunneling current with various doping densities and temperatures. Our results reveal that the reduction of leakage current with decrease of doping density and increase of temperature originates from properties of interband tunneling

  6. Leakage Characteristics of Dual-Cannula Fenestrated Tracheostomy Tubes during Positive Pressure Ventilation: A Bench Study

    Directory of Open Access Journals (Sweden)

    Thomas Berlet

    2016-01-01

    Full Text Available This study compared the leakage characteristics of different types of dual-cannula fenestrated tracheostomy tubes during positive pressure ventilation. Fenestrated Portex® Blue Line Ultra®, TRACOE® twist, or Rüsch® Traceofix® tracheostomy tubes equipped with nonfenestrated inner cannulas were tested in a tracheostomy-lung simulator. Transfenestration pressures and transfenestration leakage rates were measured during positive pressure ventilation. The impact of different ventilation modes, airway pressures, temperatures, and simulated static lung compliance settings on leakage characteristics was assessed. We observed substantial differences in transfenestration pressures and transfenestration leakage rates. The leakage rates of the best performing tubes were <3.5% of the delivered minute volume. At body temperature, the leakage rates of these tracheostomy tubes were <1%. The tracheal tube design was the main factor that determined the leakage characteristics. Careful tracheostomy tube selection permits the use of fenestrated tracheostomy tubes in patients receiving positive pressure ventilation immediately after stoma formation and minimises the risk of complications caused by transfenestration gas leakage, for example, subcutaneous emphysema.

  7. Analysis of Reverse-Bias Leakage Current Mechanisms in Metal/GaN Schottky Diodes

    Directory of Open Access Journals (Sweden)

    P. Pipinys

    2010-01-01

    Full Text Available Temperature-dependent reverse-bias current-voltage characteristics obtained by other researchers for Schottky diodes fabricated on GaN are reinterpreted in terms of phonon-assisted tunneling (PhAT model. Temperature dependence of reverse-bias leakage current is shown could be caused by the temperature dependence of electron tunneling rate from traps in the metal-semiconductor interface to the conduction band of semiconductor. A good fit of experimental data with the theory is received in a wide temperature range (from 80 K to 500 K using for calculation the effective mass of 0.222 me. and for the phonon energy the value of 70 meV. The temperature and bias voltages dependences of an apparent barrier height (activation energy are also explicable in the framework of the PhAT model.

  8. Determination of the Steady State Leakage Current in Structures with Ferroelectric Ceramic Films

    Science.gov (United States)

    Podgornyi, Yu. V.; Vorotilov, K. A.; Sigov, A. S.

    2018-03-01

    Steady state leakage currents have been investigated in capacitor structures with ferroelectric solgel films of lead zirconate titanate (PZT) formed on silicon substrates with a lower Pt electrode. It is established that Pt/PZT/Hg structures, regardless of the PZT film thickness, are characterized by the presence of a rectifying contact similar to p-n junction. The steady state leakage current in the forward direction increases with a decrease in the film thickness and is determined by the ferroelectric bulk conductivity.

  9. Compilation of current literature on seals, closures, and leakage for radioactive material packagings

    International Nuclear Information System (INIS)

    Warrant, M.M.; Ottinger, C.A.

    1989-01-01

    This report presents an overview of the features that affect the sealing capability of radioactive material packagings currently certified by the US Nuclear Regulatory Commission. The report is based on a review of current literature on seals, closures, and leakage for radioactive material packagings. Federal regulations that relate to the sealing capability of radioactive material packagings, as well as basic equations for leakage calculations and some of the available leakage test procedures are presented. The factors which affect the sealing capability of a closure, including the properties of the sealing surfaces, the gasket material, the closure method and the contents are discussed in qualitative terms. Information on the general properties of both elastomer and metal gasket materials and some specific designs are presented. A summary of the seal material, closure method, and leakage tests for currently certified packagings with large diameter seals is provided. 18 figs., 9 tabs

  10. Negative charging effect of traps on the gate leakage current of an AlGaN/GaN HEMT

    Energy Technology Data Exchange (ETDEWEB)

    Kim, J. J.; Lim, J. H.; Yang, J. W. [Chonbuk National University, Jeonju (Korea, Republic of); Stanchina, W. [University of Pittsburgh, Pittsburgh, PA (United States)

    2014-08-15

    The negative charging effect of surface traps on the gate leakage current of AlGaN/GaN high electron mobility transistors (HEMTs) was investigated. The gate leakage current could be decreased by two orders of magnitude by using a photo-electrochemical process to treat of the source and the drain region, but current flowed into the gate even at a negative voltage in a limited region when the measurement was executed with a gate voltage sweep from negative to positive voltage. Also the electrical characteristics of the HEMT were degraded by pulsed operation of the gate. Traps newly generated on the surface were regarded as sources for the current that flowed against the applied voltage, and the number of traps was estimated. Also, a slow transient in the drain current was confirmed based on the results of delayed sweep measurements.

  11. Comparison of the Standard of Air Leakage in Current Metal Duct Systems in the World

    Science.gov (United States)

    Di, Yuhui; Wang, Jiqian; Feng, Lu; Li, Xingwu; Hu, Chunlin; Shi, Junshe; Xu, Qingsong; Qiao, Leilei

    2018-01-01

    Based on the requirements of air leakage of metal ducts in Chinese design standards, technical measures and construction standards, this paper compares the development history, the classification of air pressure levels and the air tightness levels of air leakage standards of current Chinese and international metal ducts, sums up the differences, finds shortage by investigating the design and construction status and access to information, and makes recommendations, hoping to help the majority of engineering and technical personnel.

  12. Leakage current of amorphous silicon p-i-n diodes made by ion shower doping

    International Nuclear Information System (INIS)

    Kim, Hee Joon; Cho, Gyuseong; Choi, Joonhoo; Jung, Kwan-Wook

    2002-01-01

    In this letter, we report the leakage current of amorphous silicon (a-Si:H) p-i-n photodiodes, of which the p layer is formed by ion shower doping. The ion shower doping technique has an advantage over plasma-enhanced chemical vapor deposition (PECVD) in the fabrication of a large-area amorphous silicon flat-panel detector. The leakage current of the ion shower diodes shows a better uniformity within a 30 cmx40 cm substrate than that of the PECVD diodes. However, it shows a higher leakage current of 2-3 pA/mm 2 at -5 V. This high current originates from the high injection current at the p-i junction

  13. Band to Band Tunneling (BBT) Induced Leakage Current Enhancement in Irradiated Fully Depleted SOI Devices

    Science.gov (United States)

    Adell, Phillipe C.; Barnaby, H. J.; Schrimpf, R. D.; Vermeire, B.

    2007-01-01

    We propose a model, validated with simulations, describing how band-to-band tunneling (BBT) affects the leakage current degradation in some irradiated fully-depleted SOI devices. The dependence of drain current on gate voltage, including the apparent transition to a high current regime is explained.

  14. Highly Reliable Transformerless Photovoltaic Inverters With Leakage Current and Pulsating Power Elimination

    DEFF Research Database (Denmark)

    Tang, Yi; Yao, Wenli; Loh, Poh Chiang

    2016-01-01

    This paper presents a transformerless inverter topology, which is capable of simultaneously solving leakage current and pulsating power issues in grid-connected photovoltaic (PV) systems. Without adding any additional components to the system, the leakage current caused by the PV-to-ground parasi......This paper presents a transformerless inverter topology, which is capable of simultaneously solving leakage current and pulsating power issues in grid-connected photovoltaic (PV) systems. Without adding any additional components to the system, the leakage current caused by the PV......-to-ground parasitic capacitance can be bypassed by introducing a common-mode (CM) conducting path to the inverter. The resulting ground leakage current is therefore well controlled to be below the regulation limit. Furthermore, the proposed inverter can also eliminate the well-known double-line-frequency pulsating...... power that is inherent in single-phase PV systems. By properly injecting CM voltages to the output filter capacitors, the pulsating power can be decoupled from the dc-link. Therefore, it is possible to use long-lifetime film capacitors instead of electrolytic capacitors to improve the reliability...

  15. Analyzing the effect of gate dielectric on the leakage currents

    Directory of Open Access Journals (Sweden)

    Sakshi

    2016-01-01

    Full Text Available An analytical threshold voltage model for MOSFETs has been developed using different gate dielectric oxides by using MATLAB software. This paper explains the dependency of threshold voltage on the dielectric material. The variation in the subthreshold currents with the change in the threshold voltage sue to the change of dielectric material has also been studied.

  16. Ultrathin silicon dioxide layers with a low leakage current density formed by chemical oxidation of Si

    Science.gov (United States)

    Asuha,; Kobayashi, Takuya; Maida, Osamu; Inoue, Morio; Takahashi, Masao; Todokoro, Yoshihiro; Kobayashi, Hikaru

    2002-10-01

    Chemical oxidation of Si by use of azeotrope of nitric acid and water can form 1.4-nm-thick silicon dioxide layers with a leakage current density as low as those of thermally grown SiO2 layers. The capacitance-voltage (C-V) curves for these ultrathin chemical SiO2 layers have been measured due to the low leakage current density. The leakage current density is further decreased to approx1/5 (cf. 0.4 A/cm2 at the forward gate bias of 1 V) by post-metallization annealing at 200 degC in hydrogen. Photoelectron spectroscopy and C-V measurements show that this decrease results from (i) increase in the energy discontinuity at the Si/SiO2 interface, and (ii) elimination of Si/SiO2 interface states and SiO2 gap states.

  17. Analyses on the measurement of leakage currents in CdZnTe radiation detectors

    International Nuclear Information System (INIS)

    Mescher, M.J.; Hoburg, J.F.; Schlesinger, T.E.; James, R.B.

    1999-01-01

    Models that place design constraints on devices which are used to measure the leakage currents in high-resistivity semiconductor materials are presented. If these design constraints are met, these models can then be used to quantitatively predict the surface sheet resistance of devices which are dominated by surface leakage currents. As a result, a means is provided to directly compare passivation techniques which are developed to decrease surface leakage currents. Furthermore, these models illustrate the necessity for inclusion of relevant geometrical data on sample size and shape and electrode configuration when reporting results of surface passivation techniques. These models specifically examine the case where a dc potential is applied across two electrodes on the surface of a semiconductor substrate which has a surface layer with lower resistivity than the bulk material. The authors describe several of the more common configurations used in analyzing passivation techniques for compounds of Cd 1-x Zn x Te (CZT) used for room-temperature radiation detection

  18. Current leakage for low altitude satellites: modeling applications

    International Nuclear Information System (INIS)

    Konradi, A.; Mccoy, J.E.; Garriott, O.K.

    1979-01-01

    To simulate the behavior of a high voltage solar cell array in the ionospheric plasma environment, the large (90 ft x 55 ft diameter) vacuum chamber was used to measure the high-voltage plasma interactions of a 3 ft x 30 ft conductive panel. The chamber was filled with nitrogen and argon plasma at electron densities of up to 1,000,000 per cu cm. Measurements of current flow to the plasma were made in three configurations: (a) with one end of the panel grounded, (b) with the whole panel floating while a high bias was applied between the ends of the panel, and (c) with the whole panel at high negative voltage with respect to the chamber walls. The results indicate that a simple model with a constant panel conductivity and plasma resistance can adequately describe the voltage distribution along the panel and the plasma current flow. As expected, when a high potential difference is applied to the panel ends more than 95% of the panel floats negative with respect to the plasma

  19. Leakage Current Suppression with A Novel Six-Switch Photovoltaic Grid-Connected Inverter

    DEFF Research Database (Denmark)

    Wei, Baoze; Guo, Xiaoqiang; Guerrero, Josep M.

    2015-01-01

    In order to solve the problem of the leakage current in non-isolated photovoltaic (PV) systems, a novel six-switch topology and control strategy are proposed in this paper. The inductor-bypass strategy solves the common-mode voltage limitation of the conventional six-switch topology in case...... of unmatched inductances. And the stray capacitor voltage of the non-isolated photovoltaic system is free of high frequency ripples. Theoretical analysis and simulation are carried out to verify the proposed topology and its control strategy. Results indicate that the leakage current suppression can...

  20. Investigation of leakage current and breakdown voltage in irradiated double-sided 3D silicon sensors

    International Nuclear Information System (INIS)

    Betta, G.-F. Dalla; Mendicino, R.; Povoli, M.; Sultan, D.M.S.; Ayllon, N.; Hoeferkamp, M.; McDuff, H.; Seidel, S.; Boscardin, M.; Zorzi, N.; Mattiazzo, S.

    2016-01-01

    We report on an experimental study aimed at gaining deeper insight into the leakage current and breakdown voltage of irradiated double-sided 3D silicon sensors from FBK, so as to improve both the design and the fabrication technology for use at future hadron colliders such as the High Luminosity LHC. Several 3D diode samples of different technologies and layout are considered, as well as several irradiations with different particle types. While the leakage current follows the expected linear trend with radiation fluence, the breakdown voltage is found to depend on both the bulk damage and the surface damage, and its values can vary significantly with sensor geometry and process details.

  1. Polarization retention loss in PbTiO3 ferroelectric films due to leakage currents

    NARCIS (Netherlands)

    Morelli, A.; Venkatesan, Sriram; Palasantzas, G.; Kooi, B. J.; De Hosson, J. Th. M.

    2007-01-01

    The relationship between retention loss in single crystal PbTiO3 ferroelectric thin films and leakage currents is demonstrated by piezoresponse and conductive atomic force microscopy measurements. It was found that the polarization reversal in the absence of an electric field followed a stretched

  2. Analysis of Gas Leakage and Current Loss of Solid Oxide Fuel Cells by Screen Printing

    DEFF Research Database (Denmark)

    Jia, Chuan; Han, Minfang; Chen, Ming

    2017-01-01

    Two types of anode supported solid oxide fuel cell (SOFC) NiO-YSZ/YSZ/GDC/LSCF with the same structure and different manufacturing process were tested. Gas leakage was suspected for cells manufactured with screen printing technique. Effective leak current densities for both types of cells were...... calculated. Their performances of electrochemical impedance spectroscopy (EIS) were compared and distribution function of relaxation times (DRT) technique was also used to find the clue of gas leakage. Finally, thinning and penetrating holes were observed in electrolyte layer, which confirmed the occurrence...

  3. The study of human bodies' impedance networks in testing leakage currents of electrical equipments

    Science.gov (United States)

    Zhang, Zhaohui; Wang, Xiaofei

    2006-11-01

    In the testing of electrical equipments' leakage currents, impedance networks of human bodies are used to simulate the current's effect on human bodies, and they are key to the preciseness of the testing result. This paper analyses and calculates three human bodies' impedance networks of measuring electric burn current, perception or reaction current, let-go current in IEC60990, by using Matlab, compares the research result of current effect thresholds' change with sine wave's frequency published in IEC479-2, and amends parameters of measuring networks. It also analyses the change of perception or reaction current with waveform by Multisim.

  4. Effect of crack size on gas leakage characteristics in a confined space

    Energy Technology Data Exchange (ETDEWEB)

    Sung, Kun Hyuk; Ryou, Hong Sun; Yoon, Kee Bong; Lee, Hy Uk; Bang, Joo Won [Chung-Ang University, Seoul (Korea, Republic of); Li, Longnan; Choi, Jin Wook; Kim, Dae Joong [Sogang University, Seoul (Korea, Republic of)

    2016-07-15

    We numerically investigated the influence of crack size on gas leakage characteristics in a confined space. The real scale model of underground Combined cycle power plant (CCPP) was taken for simulating gas leakage characteristics for different crack sizes such as 10 mm, 15 mm and 20 mm. The commercial code of Fluent (v.16.1) was used for three-dimensional simulation. In particular, a risk region showing such a probability of ignition was newly suggested with the concept of Lower flammable limit (LFL) of methane gas used in the present study to characterize the gas propagation and the damage area in space. From the results, the longitudinal and transverse leakage distances were estimated and analyzed for quantitative evaluation of risk area. The crack size was found to have a great impact on the longitudinal leakage distance, showing an increasing tendency with the crack size. In case of a crack size of 20 mm, the longitudinal leakage distance suddenly increased after 180 s, whereas it remained constant after 2 s in the other cases. This is because a confinement effect, which is caused by circulation flows in the whole space, increased the gas concentration near the gas flow released from the crack. The confinement effect is thus closely associated with the released mass flow rate changing with the crack size. This result would be useful in designing the gas detector system for preventing accidents in the confined space as like CCPP.

  5. Leakage current reduction of vertical GaN junction barrier Schottky diodes using dual-anode process

    Science.gov (United States)

    Hayashida, Tetsuro; Nanjo, Takuma; Furukawa, Akihiko; Watahiki, Tatsuro; Yamamuka, Mikio

    2018-04-01

    The origin of the leakage current of a trench-type vertical GaN diode was discussed. We found that the edge of p-GaN is the main leakage spot. To reduce the reverse leakage current at the edge of p-GaN, a dual-anode process was proposed. As a result, the reverse blocking voltage defined at the leakage current density of 1 mA/cm2 of a vertical GaN junction barrier Schottky (JBS) diode was improved from 780 to 1,190 V, which is the highest value ever reported for vertical GaN Schottky barrier diodes (SBDs).

  6. Power crowbar system coupled by a current transformer with very low leakage inductance

    International Nuclear Information System (INIS)

    Kitagawa, S.; Hirano, K.I.

    1976-01-01

    A reliable, efficient power crowbar system has been developed for fast pinch experiments. In order to reduce the effective impedance of series capacitor system, a current transformer with extremely low leakage inductance has been designed and used. Primary and secondary windings of the transformer are alternately arranged as closely as possible. As a result, the leakage inductance is reduced to 2 nH. It is demonstrated that a current of 390 kA, the rise time of which is 4.5 μsec, is sustained for 100 μsec. Much larger system is being built, which maintains a current of 1 MA over 1 msec. The life of crowbar gap switches is prolonged by the aid of a mechanically-driven metal-to-metal contact switch. Another crowbar switch system with a high coulomb rating is under consideration, in which a gap switch is used together with a saturable reactor and a current transformer

  7. Correlation between dislocations and leakage current of p-n diodes on a free-standing GaN substrate

    Science.gov (United States)

    Usami, Shigeyoshi; Ando, Yuto; Tanaka, Atsushi; Nagamatsu, Kentaro; Deki, Manato; Kushimoto, Maki; Nitta, Shugo; Honda, Yoshio; Amano, Hiroshi; Sugawara, Yoshihiro; Yao, Yong-Zhao; Ishikawa, Yukari

    2018-04-01

    Dislocations that cause a reverse leakage current in vertical p-n diodes on a GaN free-standing substrate were investigated. Under a high reverse bias, dot-like leakage spots were observed using an emission microscope. Subsequent cathodoluminescence (CL) observations revealed that the leakage spots coincided with part of the CL dark spots, indicating that some types of dislocation cause reverse leakage. When etch pits were formed on the dislocations by KOH etching, three sizes of etch pits were obtained (large, medium, and small). Among these etch pits, only the medium pits coincided with leakage spots. Additionally, transmission electron microscopy observations revealed that pure screw dislocations are present under the leakage spots. The results revealed that 1c pure screw dislocations are related to the reverse leakage in vertical p-n diodes.

  8. A transformerless single-phase symmetrical Z-source HERIC inverter with reduced leakage currents for PV systems

    DEFF Research Database (Denmark)

    Li, Kerui; Shen, Yanfeng; Yang, Yongheng

    2018-01-01

    and thus low leakage currents in PV applications. The symmetric Z-source HERIC inverter requires two extra active switches. Nevertheless, the operation frequency of the two switches is the line frequency, leading to negligible losses. More importantly, the performance in terms of low leakage currents...... and harmonics is improved. Experimental tests are performed to validate the analysis and performance of the proposed system....

  9. Leakage current phenomena in Mn-doped Bi(Na,K)TiO_3-based ferroelectric thin films

    International Nuclear Information System (INIS)

    Walenza-Slabe, J.; Gibbons, B. J.

    2016-01-01

    Mn-doped 80(Bi_0_._5Na_0_._5)TiO_3-20(Bi_0_._5K_0_._5)TiO_3 thin films were fabricated by chemical solution deposition on Pt/TiO_2/SiO_2/Si substrates. Steady state and time-dependent leakage current were investigated from room temperature to 180 °C. Undoped and low-doped films showed space-charge-limited current (SCLC) at high temperatures. The electric field marking the transition from Ohmic to trap-filling-limited current increased monotonically with Mn-doping. With 2 mol. % Mn, the current was Ohmic up to 430 kV/cm, even at 180 °C. Modeling of the SCLC showed that all films exhibited shallow trap levels and high trap concentrations. In the regime of steady state leakage, there were also observations of negative differential resistivity and positive temperature coefficient of resistivity near room temperature. Both of these phenomena were confined to relatively low temperatures (below ∼60 °C). Transient currents were observed in the time-dependent leakage data, which was measured out to several hundred seconds. In the undoped films, these were found to be a consequence of oxygen vacancy migration modulating the electronic conductivity. The mobility and thermal activation energy for oxygen vacancies was extracted as μ_i_o_n ≈ 1.7 × 10"−"1"2 cm"2 V"−"1 s"−"1 and E_A_,_i_o_n ≈ 0.92 eV, respectively. The transient current displayed different characteristics in the 1 mol. % Mn-doped films which were not readily explained by oxygen vacancy migration.

  10. A new circuit technique for reduced leakage current in Deep Submicron CMOS technologies

    Directory of Open Access Journals (Sweden)

    A. Schmitz

    2005-01-01

    Full Text Available Modern CMOS processes in the Deep Submicron regime are restricted to supply voltages below 2 volts and further to account for the transistors' field strength limitations and to reduce the power per logic gate. To maintain the high switching performance, the threshold voltage must be scaled according with the supply voltage. However, this leads to an increased subthreshold current of the transistors in standby mode (VGS=0. Another source of leakage is gate current, which becomes significant for gate oxides of 3nm and below. We propose a Self-Biasing Virtual Rails (SBVR - CMOS technique which acts like an adaptive local supply voltage in case of standby mode. Most important sources of leakage currents are reduced by this technique. Moreover, SBVR-CMOS is capable of conserving stored information in sleep mode, which is vital for memory circuits. Memories are exposed to radiation causing soft errors. This well-known problem becomes even worse in standby mode of typical SRAMs, that have low driving performance to withstand alpha particle hits. In this paper, a 16-transistor SRAM cell is proposed, which combines the advantage of extremely low leakage currents with a very high soft error stability.

  11. On Leakage Current Measured at High Cell Voltages in Lithium-Ion Batteries

    Energy Technology Data Exchange (ETDEWEB)

    Vadivel, Nicole R.; Ha, Seungbum; He, Meinan; Dees, Dennis; Trask, Steve; Polzin, Bryant; Gallagher, Kevin G.

    2017-01-01

    In this study, parasitic side reactions in lithium-ion batteries were examined experimentally using a potentiostatic hold at high cell voltage. The experimental leakage current measured during the potentiostatic hold was compared to the Tafel expression and showed poor agreement with the expected transfer coefficient values, indicating that a more complicated expression could be needed to accurately capture the physics of this side reaction. Here we show that cross-talk between the electrodes is the primary contribution to the observed leakage current after the relaxation of concentration gradients has ceased. This cross-talk was confirmed with experiments using a lithium-ion conducting glass ceramic (LICGC) separator, which has high conductance only for lithium cations. The cells with LICGC separators showed significantly less leakage current during the potentiostatic hold test compared to cells with standard microporous separators where cross-talk is present. In addition, direct-current pulse power tests show an impedance rise for cells held at high potentials and for cells held at high temperatures, which could be attributed to film formation from the parasitic side reaction. Based on the experimental findings, a phenomenological mechanism is proposed for the parasitic side reaction which accounts for cross-talk and mass transport of the decomposition products across the separator.

  12. Leakage Currents in Low-Voltage PME and BME Ceramic Capacitors

    Science.gov (United States)

    Teverovsky, Alexander

    2015-01-01

    Introduction of BME capacitors to high-reliability electronics as a replacement for PME capacitors requires better understanding of changes in performance and reliability of MLCCs to set justified screening and qualification requirements. In this work, absorption and leakage currents in various lots of commercial and military grade X7R MLCCs rated to 100V and less have been measured to reveal difference in behavior of PME and BME capacitors in a wide range of voltages and temperatures. Degradation of leakage currents and failures in virgin capacitors and capacitors with introduced cracks has been studied at different voltages and temperatures during step stress highly accelerated life testing. Mechanisms of charge absorption, conduction and degradation have been discussed and a failure model in capacitors with defects suggested.

  13. Inverse temperature dependence of reverse gate leakage current in AlGaN/GaN HEMT

    International Nuclear Information System (INIS)

    Kaushik, J K; Balakrishnan, V R; Muralidharan, R; Panwar, B S

    2013-01-01

    The experimentally observed inverse temperature dependence of the reverse gate leakage current in AlGaN/GaN HEMT is explained using a virtual gate trap-assisted tunneling model. The virtual gate is formed due to the capture of electrons by surface states in the vicinity of actual gate. The increase and decrease in the length of the virtual gate with temperature due to trap kinetics are used to explain this unusual effect. The simulation results have been validated experimentally. (paper)

  14. FNR demonstration experiments Part I: Beam port leakage currents and spectra

    International Nuclear Information System (INIS)

    Wehe, D.K.; King, J.S.

    1983-01-01

    The goal of the NR-LEU experimental program has been to measure the changes in numerous reactor characteristics when the conventional HEU core is replaced by a complete LEU fueled core or by a single LEU element in the normal HEU core. We have observed comparisons in a) thermal flux intensity, spatial distribution and cadmium ratios, both in the core and in the light and heavy water reflectors, b) fast flux intensity and spectral shape at a special element within the core, c) the thermal leakage flux intensity at the exit positions of several beam ports and its spectral shape at one beam port, d) shim and control rod worths, e) temperature coefficient of reactivity, and f) xenon poison worth. The NR is a 2 MW light water pool reactor, reflected on three faces by light water and on one face by D 2 O, composed of MTR plate fuel elements. Figure shows a plan view of the core grid, D 2 O reflector tank, and beam ports. The conventional HEU fuel element contains eighteen MTR Al plates 30 in x 24 in x 0.06 in. The center 0.02 in of each plate is 93% U-235 enriched UAl x . A normal equilibrium HEU core loading is outlined. Each new HEU element contains ∼ 140 grams of U-235. The LEU low enrichment fuel retains the same plate and element geometry but the fuel is contained in a central 0.03 in thick UA l x matrix with 19.5% U-235 enrichment. Each new LEU element contains ov 167.3 grams U-235. In-core neutron fluxes were routinely mapped by a rhodium SPND and by many wire and foil activations. The same data, but in more restricted positions, were obtained through the light water reflector (south) and D 2 O reflector tank (north). Beam port leakage currents were measured during all power cycles, by transmission fission chambers at the exits of ports GI, and J, by a B3 detector at A-port, and by a prompt detector at the F-port exit. Thermal neutron spectra for both HEU and LEU cores were measured at I port using a single crystal silicon diffractometer. These measurements

  15. Leakage current transport mechanisms of La 0.67 Sr 0.33 MnO 3 ...

    Indian Academy of Sciences (India)

    limited current mechanism under forward bias while thermionic emission model under reverse bias. Analysis indicates that a modulating Schottky barrier exists at the LSMO/BTO interface, which dominates the leakage current transport properties ...

  16. Effect of Reverse Bias Stress on Leakage Currents and Breakdown Voltages of Solid Tantalum Capacitors

    Science.gov (United States)

    Teverovsky, Alexander A.

    2011-01-01

    The majority of solid tantalum capacitors are produced by high-temperature sintering of a fine tantalum powder around a tantalum wire followed by electrolytic anodization that forms a thin amorphous Ta2O5 dielectric layer and pyrolysis of manganese nitrite on the oxide to create a conductive manganese dioxide electrode. A contact to tantalum wire is used as anode terminal and to the manganese layer as a cathode terminal of the device. This process results in formation of an asymmetric Ta -- Ta2O5 -- MnO2 capacitor that has different characteristics at forward (positive bias applied to tantalum) and reverse (positive bias applied to manganese cathode) voltages. Reverse bias currents might be several orders of magnitude larger than forward leakage currents so I-V characteristics of tantalum capacitors resemble characteristics of semiconductor rectifiers. Asymmetric I-V characteristics of Ta -- anodic Ta2O5 systems have been observed at different top electrode materials including metals, electrolytes, conductive polymers, and manganese oxide thus indicating that this phenomenon is likely related to the specifics of the Ta -- Ta2O5 interface. There have been multiple attempts to explain rectifying characteristics of capacitors employing anodic tantalum pentoxide dielectrics. A brief review of works related to reverse bias (RB) behavior of tantalum capacitors shows that the mechanism of conduction in Ta -- Ta2O5 systems is still not clear and more testing and analysis is necessary to understand the processes involved. If tantalum capacitors behave just as rectifiers, then the assessment of the safe reverse bias operating conditions would be a relatively simple task. Unfortunately, these parts can degrade with time under reverse bias significantly, and this further complicates analysis of the I-V characteristics and establishing safe operating areas of the parts. On other hand, time dependence of reverse currents might provide additional information for investigation of

  17. Chaos characteristics and least squares support vector machines based online pipeline small leakages detection

    International Nuclear Information System (INIS)

    Liu, Jinhai; Su, Hanguang; Ma, Yanjuan; Wang, Gang; Wang, Yuan; Zhang, Kun

    2016-01-01

    Small leakages are severe threats to the long distance pipeline transportation. An online small leakage detection method based on chaos characteristics and Least Squares Support Vector Machines (LS-SVMs) is proposed in this paper. For the first time, the relationship between the chaos characteristics of pipeline inner pressures and the small leakages is investigated and applied in the pipeline detection method. Firstly, chaos in the pipeline inner pressure is found. Relevant chaos characteristics are estimated by the nonlinear time series analysis package (TISEAN). Then LS-SVM with a hybrid kernel is built and named as hybrid kernel LS-SVM (HKLS-SVM). It is applied to analyze the chaos characteristics and distinguish the negative pressure waves (NPWs) caused by small leaks. A new leak location method is also expounded. Finally, data of the chaotic Logistic-Map system is used in the simulation. A comparison between HKLS-SVM and other methods, in terms of the identification accuracy and computing efficiency, is made. The simulation result shows that HKLS-SVM gets the best performance and is effective in error analysis of chaotic systems. When real pipeline data is used in the test, the ultimate identification accuracy of HKLS-SVM reaches 97.38% and the position accuracy is 99.28%, indicating that the method proposed in this paper has good performance in detecting and locating small pipeline leaks.

  18. Study of leakage current behaviour on artificially polluted surface of ceramic insulator

    International Nuclear Information System (INIS)

    Subba Reddy, B.; Nagabhushana, G.R.

    2003-01-01

    This paper presents the results of the study concerning to the leakage current behaviour on artificially polluted ceramic insulator surface. From the present study it was observed that there is a reasonably well-defined inception of current i.e. scintillations at a finite voltage. The corresponding voltages for extinction of the current are in the range of 0.8 kV to 2.1 kV. Obviously, the dry band formed in the immediate vicinity of the pin prevents smooth current flow as the voltage rises from zero. Only when the voltage is adequate it causes a flashover of the dray band and current starts flowing. As is common in similar current extinction phenomena, here also, the extinction voltages are significantly lower than the inception voltages. Further, the voltage-current curves invariably show hysteresis-the leakage currents are lower in the reducing portion of the voltage. This is obviously due to drying of the wet pollutant layer thereby increasing its resistance. It is believed that this is the first time that such a direct quantitative evidence of drying in individual half cycles is experimentally visualized

  19. Low dislocation density InAlN/AlN/GaN heterostructures grown on GaN substrates and the effects on gate leakage characteristics

    Energy Technology Data Exchange (ETDEWEB)

    Kotani, Junji, E-mail: kotani.junji-01@jp.fujitsu.com; Yamada, Atsushi; Ishiguro, Tetsuro; Tomabechi, Shuichi; Nakamura, Norikazu [Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197 (Japan)

    2016-04-11

    This paper reports on the electrical characterization of Ni/Au Schottky diodes fabricated on InAlN high-electron-mobility transistor (HEMT) structures grown on low dislocation density free-standing GaN substrates. InAlN HEMT structures were grown on sapphire and GaN substrates by metal-organic vapor phase epitaxy, and the effects of threading dislocation density on the leakage characteristics of Ni/Au Schottky diodes were investigated. Threading dislocation densities were determined to be 1.8 × 10{sup 4 }cm{sup −2} and 1.2 × 10{sup 9 }cm{sup −2} by the cathodoluminescence measurement for the HEMT structures grown on GaN and sapphire substrates, respectively. Leakage characteristics of Ni/Au Schottky diodes were compared between the two samples, and a reduction of the leakage current of about three to four orders of magnitude was observed in the forward bias region. For the high reverse bias region, however, no significant improvement was confirmed. We believe that the leakage current in the low bias region is governed by a dislocation-related Frenkel–Poole emission, and the leakage current in the high reverse bias region originates from field emission due to the large internal electric field in the InAlN barrier layer. Our results demonstrated that the reduction of dislocation density is effective in reducing leakage current in the low bias region. At the same time, it was also revealed that another approach will be needed, for instance, band modulation by impurity doping and insertion of insulating layers beneath the gate electrodes for a substantial reduction of the gate leakage current.

  20. A 200 mV low leakage current subthreshold SRAM bitcell in a 130 nm CMOS process

    International Nuclear Information System (INIS)

    Bai Na; Lü Baitao

    2012-01-01

    A low leakage current subthreshold SRAM in 130 nm CMOS technology is proposed for ultra low voltage (200 mV) applications. Almost all of the previous subthreshold works ignore the leakage current in both active and standby modes. To minimize leakage, a self-adaptive leakage cut off scheme is adopted in the proposed design without any extra dynamic energy dissipation or performance penalty. Combined with buffering circuit and reconfigurable operation, the proposed design ensures both read and standby stability without deteriorating writability in the subthreshold region. Compared to the referenced subthreshold SRAM bitcell, the proposed bitcell shows: (1) a better critical state noise margin, and (2) smaller leakage current in both active and standby modes. Measurement results show that the proposed SRAM functions well at a 200 mV supply voltage with 0.13 μW power consumption at 138 kHz frequency. (semiconductor integrated circuits)

  1. Effects of vacuum ultraviolet irradiation on trapped charges and leakage currents of low-k organosilicate dielectrics

    Energy Technology Data Exchange (ETDEWEB)

    Zheng, H.; Guo, X.; Pei, D.; Shohet, J. L. [Plasma Processing and Technology Laboratory and Department of Electrical and Computer Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States); Ryan, E. T. [GLOBALFOUNDRIES, Albany, New York 12203 (United States); Nishi, Y. [Stanford University, Stanford, California 94305 (United States)

    2015-05-11

    Vacuum ultraviolet (VUV) photoemission spectroscopy is utilized to investigate the distribution of trapped charges within the bandgap of low dielectric constant (low-k) organosilicate (SiCOH) materials. It was found that trapped charges are continuously distributed within the bandgap of porous SiCOH and the center of the trapped states is 1.3 eV above the valence band of the tested sample. By comparing photoemission spectroscopic results before and after VUV exposure, VUV irradiation with photon energies between 7.6 and 8.9 eV was found to deplete trapped charge while UV exposure with photon energies less than 6.0 eV induces more trapped charges in tested samples. Current-Voltage (IV) characteristics results show that the reliability of dielectrics is improved after VUV irradiation with photon energies between 7.6 and 8.9 eV, while UV exposure results in an increased level of leakage current and a decreased breakdown voltage, both of which are harmful to the reliability of the dielectric. This work shows that VUV irradiation holds the potential to substitute for UV curing in microelectronic processing to improve the reliability of low-k dielectrics by mitigating the leakage currents and trapped charges induced by UV irradiation.

  2. Study of surface leakage current of AlGaN/GaN high electron mobility transistors

    International Nuclear Information System (INIS)

    Chen, YongHe; Zhang, Kai; Cao, MengYi; Zhao, ShengLei; Zhang, JinCheng; Hao, Yue; Ma, XiaoHua

    2014-01-01

    Temperature-dependent surface current measurements were performed to analyze the mechanism of surface conductance of AlGaN/GaN channel high-electron-mobility transistors by utilizing process-optimized double gate structures. Different temperatures and electric field dependence have been found in surface current measurements. At low electric field, the mechanism of surface conductance is considered to be two-dimensional variable range hopping. At elevated electric field, the Frenkel–Poole trap assisted emission governs the main surface electrons transportation. The extracted energy barrier height of electrons emitting from trapped state near Fermi energy level into a threading dislocations-related continuum state is 0.38 eV. SiN passivation reduces the surface leakage current by two order of magnitude and nearly 4 orders of magnitude at low and high electric fields, respectively. SiN also suppresses the Frenkel–Poole conductance at high temperature by improving the surface states of AlGaN/GaN. A surface treatment process has been introduced to further suppress the surface leakage current at high temperature and high field, which results in a decrease in surface current of almost 3 orders of magnitude at 476 K

  3. Current leakage relaxation and charge trapping in ultra-porous low-k materials

    International Nuclear Information System (INIS)

    Borja, Juan; Plawsky, Joel L.; Gill, William N.; Lu, T.-M.; Bakhru, Hassaram

    2014-01-01

    Time dependent dielectric failure has become a pivotal aspect of interconnect design as industry pursues integration of sub-22 nm process-technology nodes. Literature has provided key information about the role played by individual species such as electrons, holes, ions, and neutral impurity atoms. However, no mechanism has been shown to describe how such species interact and influence failure. Current leakage relaxation in low-k dielectrics was studied using bipolar field experiments to gain insight into how charge carrier flow becomes impeded by defects within the dielectric matrix. Leakage current decay was correlated to injection and trapping of electrons. We show that current relaxation upon inversion of the applied field can be described by the stretched exponential function. The kinetics of charge trapping events are consistent with a time-dependent reaction rate constant, k=k 0 ⋅(t+1) β−1 , where 0 < β < 1. Such dynamics have previously been observed in studies of charge trapping reactions in amorphous solids by W. H. Hamill and K. Funabashi, Phys. Rev. B 16, 5523–5527 (1977). We explain the relaxation process in charge trapping events by introducing a nonlinear charge trapping model. This model provides a description on the manner in which the transport of mobile defects affects the long-tail current relaxation processes in low-k films

  4. Leakage Current Suppression with A Novel Six-Switch Photovoltaic Grid-Connected Inverter

    OpenAIRE

    Wei, Baoze; Guo, Xiaoqiang; Guerrero, Josep M.; Savaghebi, Mehdi

    2015-01-01

    In order to solve the problem of the leakage current in non-isolated photovoltaic (PV) systems, a novel six-switch topology and control strategy are proposed in this paper. The inductor-bypass strategy solves the common-mode voltage limitation of the conventional six-switch topology in case of unmatched inductances. And the stray capacitor voltage of the non-isolated photovoltaic system is free of high frequency ripples. Theoretical analysis and simulation are carried out to verify the propos...

  5. Role of Ga vacancies in enhancing the leakage current of GaN Schottky barrier ultraviolet photodetectors

    International Nuclear Information System (INIS)

    De-Gang, Zhao; Shuang, Zhang; Wen-Bao, Liu; De-Sheng, Jiang; Jian-Jun, Zhu; Zong-Shun, Liu; Hui, Wang; Shu-Ming, Zhang; Hui, Yang; Xiao-Peng, Hao; Long, Wei

    2010-01-01

    The leakage current of GaN Schottky barrier ultraviolet photodetectors is investigated. It is found that the photodetectors adopting undoped GaN instead of lightly Si-doped GaN as an active layer show a much lower leakage current even when they have a higher dislocation density. It is also found that the density of Ga vacancies in undoped GaN is much lower than in Si-doped GaN. The Ga vacancies may enhance tunneling and reduce effective Schottky barrier height, leading to an increase of leakage current. It suggests that when undoped GaN is used as the active layer, it is necessary to reduce the leakage current of GaN Schottky barrier ultraviolet photodetector. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  6. Nanoscale leakage current measurements in metal organic chemical vapor deposition crystalline SrTiO3 films

    International Nuclear Information System (INIS)

    Rozier, Y.; Gautier, B.; Hyvert, G.; Descamps, A.; Plossu, C.; Dubourdieu, C.; Ducroquet, F.

    2009-01-01

    The properties of SrTiO 3 thin films, grown by liquid injection metal organic chemical vapor deposition on Si/SiO 2 , using a mixture of precursors, have been investigated at the nanoscale using an Atomic Force Microscope in the so-called Conductive Atomic Force Microscopy mode. Maps of the leakage currents with a nanometric resolution have been obtained on films elaborated at different temperatures and stoichiometries in order to discriminate the role of each parameter on the onset of leakage currents in the resulting layers. It appears that the higher the deposition temperature, the higher the leakage currents of the films. The mapping with a nanometric precision allows to show a heterogeneous behaviour of the surface with leaky grains and insulating boundaries. The study of films elaborated at the same temperature with different compositions supports the assumption that the leakage currents on Ti-rich layers are far higher than on Sr-rich layers

  7. Permanent supervision of leakage currents in low voltage installations; Supervisao permanente de correntes de fuga em instalacoes BT

    Energy Technology Data Exchange (ETDEWEB)

    Muhm, Helmut [W. Bender GmbH (Germany)

    2010-09-15

    Electromagnetic compatibility (EMC) is a premise for the electrical installations operate free of disturbances and reliably. Therefor, It is important detect dispersed leakage currents. This article show the corrective measures of this problem.

  8. Detection of defect states responsible for leakage current in ultrathin tantalum pentoxide (Ta2O5) films by zero-bias thermally stimulated current spectroscopy

    International Nuclear Information System (INIS)

    Lau, W.S.; Zhong, L.; Lee, A.; See, C.H.; Han, T.; Sandler, N.P.; Chong, T.C.

    1997-01-01

    Defect states responsible for leakage current in ultrathin (physical thickness 2 O 5 ) films were measured with a novel zero-bias thermally stimulated current technique. It was found that defect states A, whose activation energy was estimated to be about 0.2 eV, can be more efficiently suppressed by using N 2 O rapid thermal annealing (RTA) instead of using O 2 RTA for postdeposition annealing. The leakage current was also smaller for samples with N 2 O RTA than those with O 2 RTA for postdeposition annealing. Hence, defect states A are quite likely to be important in causing leakage current. copyright 1997 American Institute of Physics

  9. Image artifacts in concurrent transcranial magnetic stimulation (TMS) and fMRI caused by leakage currents: modeling and compensation.

    Science.gov (United States)

    Weiskopf, Nikolaus; Josephs, Oliver; Ruff, Christian C; Blankenburg, Felix; Featherstone, Eric; Thomas, Anthony; Bestmann, Sven; Driver, Jon; Deichmann, Ralf

    2009-05-01

    To characterize and eliminate a new type of image artifact in concurrent transcranial magnetic stimulation and functional MRI (TMS-fMRI) caused by small leakage currents originating from the high-voltage capacitors in the TMS stimulator system. The artifacts in echo-planar images (EPI) caused by leakage currents were characterized and quantified in numerical simulations and phantom studies with different phantom-coil geometries. A relay-diode combination was devised and inserted in the TMS circuit that shorts the leakage current. Its effectiveness for artifact reduction was assessed in a phantom scan resembling a realistic TMS-fMRI experiment. The leakage-current-induced signal changes exhibited a multipolar spatial pattern and the maxima exceeded 1% at realistic coil-cortex distances. The relay-diode combination effectively reduced the artifact to a negligible level. The leakage-current artifacts potentially obscure effects of interest or lead to false-positives. Since the artifact depends on the experimental setup and design (eg, amplitude of the leakage current, coil orientation, paradigm, EPI parameters), we recommend its assessment for each experiment. The relay-diode combination can eliminate the artifacts if necessary.

  10. Image Artifacts in Concurrent Transcranial Magnetic Stimulation (TMS) and fMRI Caused by Leakage Currents: Modeling and Compensation

    Science.gov (United States)

    Weiskopf, Nikolaus; Josephs, Oliver; Ruff, Christian C; Blankenburg, Felix; Featherstone, Eric; Thomas, Anthony; Bestmann, Sven; Driver, Jon; Deichmann, Ralf

    2009-01-01

    Purpose To characterize and eliminate a new type of image artifact in concurrent transcranial magnetic stimulation and functional MRI (TMS-fMRI) caused by small leakage currents originating from the high-voltage capacitors in the TMS stimulator system. Materials and Methods The artifacts in echo-planar images (EPI) caused by leakage currents were characterized and quantified in numerical simulations and phantom studies with different phantom-coil geometries. A relay-diode combination was devised and inserted in the TMS circuit that shorts the leakage current. Its effectiveness for artifact reduction was assessed in a phantom scan resembling a realistic TMS-fMRI experiment. Results The leakage-current-induced signal changes exhibited a multipolar spatial pattern and the maxima exceeded 1% at realistic coil-cortex distances. The relay-diode combination effectively reduced the artifact to a negligible level. Conclusion The leakage-current artifacts potentially obscure effects of interest or lead to false-positives. Since the artifact depends on the experimental setup and design (eg, amplitude of the leakage current, coil orientation, paradigm, EPI parameters), we recommend its assessment for each experiment. The relay-diode combination can eliminate the artifacts if necessary. J. Magn. Reson. Imaging 2009;29:1211–1217. © 2009 Wiley-Liss, Inc. PMID:19388099

  11. Effect of Relative Movement between the Shroud and Blade on Tip Leakage Flow Characteristics

    Directory of Open Access Journals (Sweden)

    Xiaochun Wang

    2017-10-01

    Full Text Available An experimental and numerical investigation into the tip leakage flow of a turbine rotor is carried out using a particle image velocimetry (PIV system and the commercial software ANSYS CFX 14.0. The specimen used in this work is a typical GE-E3 model with a new squealer tip design. The experimental data are used to create a turbulence model and numerical strategy. Through the validated turbulence model and numerical strategy, simulations are carried out to compare the characteristics of the tip leakage flow in three cases: (1 the blade is rotating, but the shroud is stationary, which is the real status of turbine rotor operation; (2 the blade is stationary, but the shroud moves, to simulate their relative movement; (3 the blade is stationary, and the shroud is also stationary, this is a simplified case, but has been widely used in the experiments on rotor tip leakage flow. Detailed analysis of the flow phenomena shows that the second case is a reasonable alternative approach to simulate the real state. However, the flow patterns in the third case exhibit some evident differences from the real status. These differences are caused by the inaccurate viscous force arising from the stationary blade and shroud. In this work, a modification method for the experiments conducted in the third case is firstly proposed, which is realized through adding an imaginary roughness at the shroud wall to be close to the real viscous effect, and to thereby reduce the deviation of the experiment from the real case. According to the results calculated by ANSYS CFX, the flow structure in the modification case is very close to the real status. Besides, this modification case is an easy and cheap way to simulate the real tip leakage flow.

  12. A Grid Connected Transformerless Inverter and its Model Predictive Control Strategy with Leakage Current Elimination Capability

    Directory of Open Access Journals (Sweden)

    J. Fallah Ardashir

    2017-06-01

    Full Text Available This paper proposes a new single phase transformerless Photovoltaic (PV inverter for grid connected systems. It consists of six power switches, two diodes, one capacitor and filter at the output stage. The neutral of the grid is directly connected to the negative terminal of the source. This results in constant common mode voltage and zero leakage current. Model Predictive Controller (MPC technique is used to modulate the converter to reduce the output current ripple and filter requirements. The main advantages of this inverter are compact size, low cost, flexible grounding configuration. Due to brevity, the operating principle and analysis of the proposed circuit are presented in brief. Simulation and experimental results of 200W prototype are shown at the end to validate the proposed topology and concept. The results obtained clearly verifies the performance of the proposed inverter and its practical application for grid connected PV systems.

  13. Leakage current analysis for dislocations in Na-flux GaN bulk single crystals by conductive atomic force microscopy

    Science.gov (United States)

    Hamachi, T.; Takeuchi, S.; Tohei, T.; Imanishi, M.; Imade, M.; Mori, Y.; Sakai, A.

    2018-04-01

    The mechanisms associated with electrical conduction through individual threading dislocations (TDs) in a Na-flux GaN crystal grown with a multipoint-seed-GaN technique were investigated by conductive atomic force microscopy (C-AFM). To focus on individual TDs, dislocation-related etch pits (DREPs) were formed on the Na-flux GaN surface by wet chemical etching, after which microscopic Pt electrodes were locally fabricated on the DREPs to form conformal contacts to the Na-flux GaN crystal, using electron beam assisted deposition. The C-AFM data clearly demonstrate that the leakage current flows through the individual TD sites. It is also evident that the leakage current and the electrical conduction mechanism vary significantly based on the area within the Na-flux GaN crystal where the TDs are formed. These regions include the c-growth sector (cGS) in which the GaN grows in the [0001 ] direction on top of the point-seed with a c-plane growth front, the facet-growth sector (FGS) in which the GaN grows with {10 1 ¯ 1 } facets on the side of the cGS, the boundary region between the cGS and FGS (BR), and the coalescence boundary region between FGSs (CBR). The local current-voltage (I-V) characteristics of the specimen demonstrate space charge limited current conduction and conduction related to band-like trap states associated with TDs in the FGS, BR, and CBR. A detailed analysis of the I-V data indicates that the electrical conduction through TDs in the cGS may proceed via the Poole-Frenkel emission mechanism.

  14. Optimization of process parameter variations on leakage current in in silicon-oninsulator vertical double gate mosfet device

    Directory of Open Access Journals (Sweden)

    K.E. Kaharudin

    2015-12-01

    Full Text Available This paper presents a study of optimizing input process parameters on leakage current (IOFF in silicon-on-insulator (SOI Vertical Double-Gate,Metal Oxide Field-Effect-Transistor (MOSFET by using L36 Taguchi method. The performance of SOI Vertical DG-MOSFET device is evaluated in terms of its lowest leakage current (IOFF value. An orthogonal array, main effects, signal-to-noise ratio (SNR and analysis of variance (ANOVA are utilized in order to analyze the effect of input process parameter variation on leakage current (IOFF. Based on the results, the minimum leakage current ((IOFF of SOI Vertical DG-MOSFET is observed to be 0.009 nA/µm or 9 ρA/µm while keeping the drive current (ION value at 434 µA/µm. Both the drive current (ION and leakage current (IOFF values yield a higher ION/IOFF ratio (48.22 x 106 for low power consumption application. Meanwhile, polysilicon doping tilt angle and polysilicon doping energy are recognized as the most dominant factors with each of the contributing factor effects percentage of 59% and 25%.

  15. New Leakage Current Particulate Matter Sensor for On-Board Diagnostics

    Directory of Open Access Journals (Sweden)

    Jiawei Wang

    2016-01-01

    Full Text Available Structure and principle of the new leakage current particulate matter (PM sensor are introduced and further study is performed on the PM sensor with the combination of numerical simulation and bench test. High voltage electrode, conductive shell, and heaters are all built-in. Based on the principle of Venturi tube and maze structure design, this sensor can detect transient PM concentrations. Internal flow field of the sensor and distribution condition of PM inside the sensor are analyzed through gas-solid two-phase flow numerical simulation. The experiment was also carried out on the whole sensor system (including mechanical and electronic circuit part and the output signals were analyzed. The results of simulation and experiment reveal the possibility of PM concentration (mass detection by the sensor.

  16. Leakage current-induced effects in the silicon microstrip and gas electron multiplier readout chain and their compensation method

    Science.gov (United States)

    Zubrzycka, W.; Kasinski, K.

    2018-04-01

    Leakage current flowing into the charge sensitive amplifier (CSA) is a common issue in many radiation detection systems as it can increase overall system noise, shift a DC baseline or even lead a recording channel to instability. The commonly known leakage current contributor is a detector, however other system components like wires or an input protection circuit may become a serious problem. Compensation of the leakage current resulting from the electrostatic discharge (ESD) protection circuit by properly sizing its components is possible only for a narrow temperature range. Moreover, the leakage current from external sources can be significantly larger. Many applications, especially High Energy Physics (HEP) experiments, require a fast baseline restoration for high input hit rates by applying either a low-value feedback resistor or a high feedback resistance combined with a pulsed reset circuit. Leakage current flowing in the feedback in conjunction with a large feedback resistance supplied with a pulsed reset results in a significant voltage offset between the CSA input and output which can cause problems (e.g. fake hits or instability). This paper shows an issue referred to the leakage current of the ESD protection circuit flowing into the input amplifier. The following analysis and proposed solution is a result of the time and energy readout ASIC project realization for the Compressed Baryonic Matter (CBM) experiment at FAIR (Facility for Antiproton and Ion Research) in Darmstadt, Germany. This chip is purposed to work with microstrip and gaseous detectors, with high average input pulses frequencies (250 kHit/s per channel) and the possibility to process input charge of both polarities. We present measurements of the test structure fabricated in UMC 180 nm technology and propose a solution addressing leakage current related issues. This work combines the leakage current compensation capabilities at the CSA level with high, controllable value of the amplifier

  17. Investigation of surface related leakage current in AlGaN/GaN High Electron Mobility Transistors

    Energy Technology Data Exchange (ETDEWEB)

    Kaushik, J.K., E-mail: janeshkaushik@sspl.drdo.in [Solid State Physics Laboratory, Delhi 110054 (India); Balakrishnan, V.R.; Mongia, D.; Kumar, U.; Dayal, S. [Solid State Physics Laboratory, Delhi 110054 (India); Panwar, B.S. [Indian Institute of Technology Delhi, Hauz Khas, New Delhi 110016 (India); Muralidharan, R. [Indian Institute of Science, Bengaluru, Karnataka 560012 (India)

    2016-08-01

    This paper reports the study of surface-related mechanisms to explain the high reverse leakage current observed in the in-house fabricated Si{sub 3}N{sub 4} passivated AlGaN/GaN High Electron Mobility Transistors. We propose that the Si{sub 3}N{sub 4}/AlGaN interface in the un-gated regions provides an additional leakage path between the gate and source/drain and may constitute a large component of reverse current. This surface related leakage component of current exhibits both temperature and electric field dependence and its Arrhenius behavior has been experimentally verified using Conductance Deep Level Transient Spectroscopy and temperature dependent reverse leakage current measurements. A thin interfacial amorphous semiconductor layer formed due to inter diffusion at Si{sub 3}N{sub 4}/AlGaN interface has been presumed as the source for this surface related leakage. We, therefore, conclude that optimum Si{sub 3}N{sub 4} deposition conditions and careful surface preparation prior to passivation can limit the extent of surface leakage and can thus vastly improve the device performance. - Highlights: • Enhanced leakage in AlGaN/GaN High Electron Mobility Transistors after passivation • Experimental evidence of the presence of extrinsic traps at Si{sub 3}N{sub 4}/AlGaN interface • Electron hopping in shallower extended defects and band tail traps at the interface. • Reduction in current collapse due to the virtual gate inhibition by this conduction • However, limitation on the operating voltages due to decrease in breakdown voltage.

  18. Motor current and leakage flux signature analysis technique for condition monitoring

    International Nuclear Information System (INIS)

    Pillai, M.V.; Moorthy, R.I.K.; Mahajan, S.C.

    1994-01-01

    Till recently analysis of vibration signals was the only means available to predict the state of health of plant equipment. Motor current and leakage magnetic flux signature analysis is acquiring importance as a technique for detection of incipient damages in the electrical machines and as a supplementary technique for diagnostics of driven equipment such as centrifugal and reciprocating pumps. The state of health of the driven equipment is assessed by analysing time signal, frequency spectrum and trend analysis. For example, the pump vane frequency, piston stroke frequency, gear frequency and bearing frequencies are indicated in the current and flux spectra. By maintaining a periodic record of the amplitudes of various frequency lines in the frequency spectra, it is possible to understand the trend of deterioration of parts and components of the pump. All problems arising out of inappropriate mechanical alignment of vertical pumps are easily identified by a combined analysis of current, flux and vibration signals. It is found that current signature analysis technique is a sufficient method in itself for the analysis of state of health of reciprocating pumps and compressors. (author). 10 refs., 4 figs

  19. Study on the low leakage current of an MIS structure fabricated by ICP-CVD

    Energy Technology Data Exchange (ETDEWEB)

    Tsai, S-Y; Hon, M-H [Department of Materials Science and Engineering, National Cheng Kung University, 1, Ta-Hsueh Road, Tainan, 701 Taiwan (China); Lu, Y-M, E-mail: ymlumit@yahoo.com.tw

    2008-03-15

    As the dimensions of electric devices continue to shrink, it is becoming increasingly important to understand how to obtain good quality gate oxide film materials wilth higher carrier mobility, lower leakage current and greater reliability. All of them have become major concerns in the fabrication of thin film oxide transistors. A novel film deposition method called Inductively Coupled Plasma-Chemical Vapor Deposition (ICP-CVD) has received attraction in the semiconductor industry, because it can be capable of generating high density plasmas at extremely low temperature, resulting in less ion bombardment of the material surface. In this work, we present the results of crystallized silicon dioxide films deposited by inductively coupled plasma chemical vapor deposition technique at an extremely low temperature of 90 deg. C. The value of the refractive index of the crystallized ICP-CVD SiO{sub 2} film depends on the r.f. power of the ICP system, and approximates to be 1.46. This value is comparable to that of SiO{sub 2} films prepared by thermal oxidation. As the r.f. power of ICP applied more than 1250 Watts, still only the (111) diffraction peak is observed by XRD, which implies a very strong preferred orientation or single crystal structure. Too low or too high r.f. power both produces amorphous SiO{sub 2} films. From the I-V curve, the MIS device with a SiO{sub 2} dielectric film has a lower leakage current density of 6.8x10{sup -8}A/cm{sup 2} at 1V as the film prepared at 1750 watts. The highest breakdown field in this study is 15.8 MV/cm. From the FTIR analysis, it was found that more hydrogen atoms incorporate into films and form Si-OH bonds as the r.f. power increases. The existence of Si-OH bonds leads to a poor reliability of the MIS device.

  20. Prediction of leakage current of non-ceramic insulators in early aging period

    Energy Technology Data Exchange (ETDEWEB)

    El-Hag, Ayman H. [Electrical Engineering Department, American University of Sharjah, Sharjah (United Arab Emirates); Jahromi, Ali Naderian [Kinectrics Inc., Transmission and Distribution Technologies, Toronto (Canada); Sanaye-Pasand, Majid [Electrical and Computer Engineering Department, University of Tehran (Iran)

    2008-10-15

    The paper presents a neural network based prediction technique for the leakage current (LC) of non-ceramic insulators during salt-fog test. Nearly 50 distribution class silicone rubber (SIR) insulators with three different voltage classes have been tested in a salt-fog chamber, where the LC has been continuously recorded for at least 100 h. A boundary for early aging period is defined by the rate of change of the LC instead of a fixed threshold value. Consequently, the Gaussian radial basis network has been adopted to predict the level of LC at the early stage of aging of the SIR insulators and is compared with a classical network. The initial values of LC and its rate of change at 10 min intervals for the first 5 h are selected as the input to the network, and the final value of LC of the early aging period is considered as the output of the network. It is found that Gaussian radial basis function network with a random optimizing training method is an appropriate network to predict the LC with a 3.5-5.3% accuracy, if the training data and the testing data are selected from the same type of SIR insulators. (author)

  1. The effect of cathode bias (field effect) on the surface leakage current of CdZnTe detectors

    DEFF Research Database (Denmark)

    Bolotnikov, A.E.; Chen, C.M.H.; Cook, W.R.

    2003-01-01

    Surface resistivity is an important parameter of multi-electrode CZT detectors such as coplanar-grid, strip, or pixel detectors. Low surface resistivity results in a high leakage current and affects the charge collection efficiency in the areas near contacts. Thus, it is always desirable to have ...

  2. Influence of the gate edge on the reverse leakage current of AlGaN/GaN HEMTs

    Directory of Open Access Journals (Sweden)

    YongHe Chen

    2015-09-01

    Full Text Available By comparing the Schottky diodes of different area and perimeter, reverse gate leakage current of AlGaN/GaN high mobility transistors (HEMT at gate bias beyond threshold voltage is studied. It is revealed that reverse current consists of area-related and perimeter-related current. An analytical model of electric field calculation is proposed to obtain the average electric field around the gate edge at high revers bias and estimate the effective range of edge leakage current. When the reverse bias increases, the increment of electric field is around the gate edge of a distance of ΔL, and perimeter-related gate edge current keeps increasing. By using the calculated electric field and the temperature-dependent current-voltage measurements, the edge gate leakage current mechanism is found to be Fowler-Nordheim tunneling at gate bias bellows -15V caused by the lateral extended depletion region induced barrier thinning. Effective range of edge current of Schottky diodes is about hundred to several hundred nano-meters, and is different in different shapes of Schottky diodes.

  3. Leakage current analysis of a single-phase transformer-less PV inverter connected to the grid

    DEFF Research Database (Denmark)

    Ma, Lin; Tang, F.; Zhou, F.

    2009-01-01

    Due to the large surface of the PV generator, its stray capacity with respect to the ground reaches values that can be quite high. When no transformer is used in a grid-connected PV system, common-mode current, which caused by the common mode voltage, can flow through the stray capacitance between...... the PV array and the ground. It is quite harmful to the body safety and PV system. In order to avoid leakage current, different inverter topologies that generate no varying common-mode voltages, such as bipolar pulse-width modulation (PWM) full-bridge topology, NPC topology have been proposed. From...... the safety and energy saving viewpoint, it is necessary to develop a higher efficiency topology. In this paper, the generation mechanism of common mode current is discussed. Then different methods used to eliminate the leakage current are compared. Finally, the full-bridge which generates no varying common...

  4. First-principles simulations of the leakage current in metal-oxide-semiconductor structures caused by oxygen vacancies in HfO2 high-K gate dielectric

    International Nuclear Information System (INIS)

    Mao, L.F.; Wang, Z.O.

    2008-01-01

    HfO 2 high-K gate dielectric has been used as a new gate dielectric in metal-oxide-semiconductor structures. First-principles simulations are used to study the effects of oxygen vacancies on the tunneling current through the oxide. A level which is nearly 1.25 eV from the bottom of the conduction band is introduced into the bandgap due to the oxygen vacancies. The tunneling current calculations show that the tunneling currents through the gate oxide with different defect density possess the typical characteristic of stress-induced leakage current. Further analysis shows that the location of oxygen vacancies will have a marked effect on the tunneling current. The largest increase in the tunneling current caused by oxygen vacancies comes about at the middle oxide field when defects are located at the middle of the oxide. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  5. Leakage current characterization for estimating the conditions of non-ceramic insulators' surfaces

    Energy Technology Data Exchange (ETDEWEB)

    El-Hag, Ayman H. [Electrical Engineering Department, American University of Sharjah, Sharjah (United Arab Emirate)

    2007-03-15

    In this work both detection of the beginning of dry-band arcing and correlating the average value of leakage current (LC) with non-ceramic insulator surface damage have been investigated. Silicone rubber insulators were tested in salt-fog under different voltage and conductivity levels. The autocorrelation function (ACF) was calculated for both the fundamental and third harmonic components of LC during the early aging period (EAP). It has been observed that distinct differences exist in the behavior of both the fundamental and that of the third harmonic components of the LC during EAP. Although the fundamental component of the LC begins to grow immediately after starting the test, the third harmonic requires a much longer period of time to begin. Dry-band arcing is highly correlated with distortion in the LC and hence to its third harmonic component. But it has been observed that the level of the fundamental component of LC at which the third harmonic component started to increase is different from one case to another. As such, it is more appropriate to use the ACF of the third harmonic component of LC as an indication of dry-band arcing rather than a simple threshold value. Moreover, the average value of LC during late aging period (LAP) was correlated with the damage of non-ceramic insulators. It has been found that the average level of both the fundamental and third harmonic component of LC is well correlated with the different degrees of damage of non-ceramic insulators' surface. (author)

  6. The optimal design of 15 nm gate-length junctionless SOI FinFETs for reducing leakage current

    International Nuclear Information System (INIS)

    Liu, Xi; Wu, Meile; Jin, Xiaoshi; Chuai, Rongyan; Lee, Jung-Hee; Lee, Jong-Ho

    2013-01-01

    Junctionless (JL) transistors need to be heavily doped to have large drain current in the ON-state, which engenders the effect of band-to-band tunneling (BTBT) in the OFF-state simultaneously. It causes an obvious increase of the leakage current in the OFF-state. This paper presents an effective method of reducing the leakage current by changing the geometrical shape and dimension of the oxide layer under the edge of the gate. The optimal design of 15 nm gate-length JL silicon-on-insulator FinFETs with the triple-gate structure is performed for reducing the effect of BTBT through simulation and analysis by this means. (paper)

  7. Study of radiation-induced leakage current between adjacent devices in a CMOS integrated circuit

    Institute of Scientific and Technical Information of China (English)

    Ding Lili; Guo Hongxia; Chen Wei; Fan Ruyu

    2012-01-01

    Radiation-induced inter-device leakage is studied using an analytical model and TCAD simulation.There were some different opinions in understanding the process of defect build-up in trench oxide and parasitic leakage path turning on from earlier studies.To reanalyze this problem and make it beyond argument,every possible variable is considered using theoretical analysis,not just the change of electric field or oxide thickness independently.Among all possible inter-device leakage paths,parasitic structures with N-well as both drain and source are comparatively more sensitive to the total dose effect when a voltage discrepancy exists between the drain and source region.Since N-well regions are commonly connected to the same power supply,these kinds of structures will not be a problem in a real CMOS integrated circuit.Generally speaking,conduction paths of inter-device leakage existing in a real integrated circuit and under real electrical circumstances are not very sensitive to the total ionizing dose effect.

  8. Simulation and investigation of SiPM’s leakage currents at low voltages

    International Nuclear Information System (INIS)

    Parygin, P P; Popova, E V; Grachev, V M

    2017-01-01

    Technology Computer-Aided Design (TCAD) allows us to use computers in order to develop semiconductor processing technologies and devices and optimize them. Within a framework of a study of silicon photomultipliers (SiPM) a simulation of these devices has been made. The simulation was performed for the irradiated SiPMs and current-voltage characteristics were obtained for the modeled devices. Investigation of current-voltage curve below breakdown with regard to the simulated structure was performed. Obtained curves are presented. (paper)

  9. The analysis of leakage current in MIS Au/SiO{sub 2}/n-GaAs at room temperature

    Energy Technology Data Exchange (ETDEWEB)

    Altuntas, H., E-mail: altunhalit@gmail.com [Cankiri Karatekin University, Department of Physics, Faculty of Science (Turkey); Ozcelik, S. [Gazi University, Department of Physics, Faculty of Science (Turkey)

    2013-10-15

    The aim of this study is to determine the reverse-bias leakage current conduction mechanisms in Au/SiO{sub 2}/n-GaAs metal-insulator-semiconductor type Schottky contacts. Reverse-bias current-voltage measurements (I-V) were performed at room temperature. The using of leakage current values in SiO{sub 2} at electric fields of 1.46-3.53 MV/cm, ln(J/E) vs. {radical}E graph showed good linearity. Rom this plot, dielectric constant of SiO{sub 2} was calculated as 3.7 and this value is perfect agreement with 3.9 which is value of SiO{sub 2} dielectric constant. This indicates, Poole-Frenkel type emission mechanism is dominant in this field region. On the other hand, electric fields between 0.06-0.73 and 0.79-1.45 MV/cm, dominant leakage current mechanisms were found as ohmic type conduction and space charge limited conduction, respectively.

  10. Minority Carrier Tunneling and Stress-Induced Leakage Current for p+ gate MOS Capacitors with Poly-Si and PolySi0.7Ge0.3 Gate Material

    NARCIS (Netherlands)

    Houtsma, V.E.; Holleman, J.; Salm, Cora; de Haan, I.R.; Schmitz, Jurriaan; Widdershoven, F.P.; Widdershoven, F.P.; Woerlee, P.H.

    1999-01-01

    In this paper the I-V conduction mechanism for gate injection (-V g), Stress-Induced Leakage Current (SILC) characteristics and time-to-breakdown (tbd) of PMOS capacitors with p+-poly-Si and poly-SiGe gate material on 5.6, 4.8 and 3.1 nm oxide thickness are studied. A model based on Minority Carrier

  11. Capacitor Property and Leakage Current Mechanism of ZrO2 Thin Dielectric Films Prepared by Anodic Oxidation

    Science.gov (United States)

    Kamijyo, Masahiro; Onozuka, Tomotake; Shinkai, Satoko; Sasaki, Katsutaka; Yamane, Misao; Abe, Yoshio

    2003-07-01

    Polycrystalline ZrO2 thin film capacitors were prepared by anodizing sputter-deposited Zr films. Electrical measurements are performed for the parallel-plate anodized capacitors with an Al-ZrO2-Zr (metal-insulator-metal) structure, and a high capacitance density (0.6 μF/cm2) and a low dielectric loss of nearly 1% are obtained for a very thin-oxide capacitor anodized at 10 V. In addition, the leakage current density of this capacitor is about 1.8 × 10-8 A/cm2 at an applied voltage of 5 V. However, the leakage current is somewhat larger than that of a low-loss HfO2 capacitor. The leakage current density (J) of ZrO2 capacitors as a function of applied electric field (E) was investigated for several capacitors with different oxide thicknesses, by plotting \\ln(J) vs E1/2 curves. As a result, it is revealed that the conduction mechanism is due to the Poole-Frenkel effect, irrespective of the oxide thickness.

  12. Suppression of Lateral Diffusion and Surface Leakage Currents in nBn Photodetectors Using an Inverted Design

    Science.gov (United States)

    Du, X.; Savich, G. R.; Marozas, B. T.; Wicks, G. W.

    2018-02-01

    Surface leakage and lateral diffusion currents in InAs-based nBn photodetectors have been investigated. Devices fabricated using a shallow etch processing scheme that etches through the top contact and stops at the barrier exhibited large lateral diffusion current but undetectably low surface leakage. Such large lateral diffusion current significantly increased the dark current, especially in small devices, and causes pixel-to-pixel crosstalk in detector arrays. To eliminate the lateral diffusion current, two different approaches were examined. The conventional solution utilized a deep etch process, which etches through the top contact, barrier, and absorber. This deep etch processing scheme eliminated lateral diffusion, but introduced high surface current along the device mesa sidewalls, increasing the dark current. High device failure rate was also observed in deep-etched nBn structures. An alternative approach to limit lateral diffusion used an inverted nBn structure that has its absorber grown above the barrier. Like the shallow etch process on conventional nBn structures, the inverted nBn devices were fabricated with a processing scheme that only etches the top layer (the absorber, in this case) but avoids etching through the barrier. The results show that inverted nBn devices have the advantage of eliminating the lateral diffusion current without introducing elevated surface current.

  13. Evaluation of Information Leakage from Cryptographic Hardware via Common-Mode Current

    Science.gov (United States)

    Hayashi, Yu-Ichi; Homma, Naofumi; Mizuki, Takaaki; Sugawara, Takeshi; Kayano, Yoshiki; Aoki, Takafumi; Minegishi, Shigeki; Satoh, Akashi; Sone, Hideaki; Inoue, Hiroshi

    This paper presents a possibility of Electromagnetic (EM) analysis against cryptographic modules outside their security boundaries. The mechanism behind the information leakage is explained from the view point of Electromagnetic Compatibility: electric fluctuation released from cryptographic modules can conduct to peripheral circuits based on ground bounce, resulting in radiation. We demonstrate the consequence of the mechanism through experiments where the ISO/IEC standard block cipher AES (Advanced Encryption Standard) is implemented on an FPGA board and EM radiations from power and communication cables are measured. Correlation Electromagnetic Analysis (CEMA) is conducted in order to evaluate the information leakage. The experimental results show that secret keys are revealed even though there are various disturbing factors such as voltage regulators and AC/DC converters between the target module and the measurement points. We also discuss information-suppression techniques as electrical-level countermeasures against such CEMAs.

  14. Carbon nanotube feedback-gate field-effect transistor: suppressing current leakage and increasing on/off ratio.

    Science.gov (United States)

    Qiu, Chenguang; Zhang, Zhiyong; Zhong, Donglai; Si, Jia; Yang, Yingjun; Peng, Lian-Mao

    2015-01-27

    Field-effect transistors (FETs) based on moderate or large diameter carbon nanotubes (CNTs) usually suffer from ambipolar behavior, large off-state current and small current on/off ratio, which are highly undesirable for digital electronics. To overcome these problems, a feedback-gate (FBG) FET structure is designed and tested. This FBG FET differs from normal top-gate FET by an extra feedback-gate, which is connected directly to the drain electrode of the FET. It is demonstrated that a FBG FET based on a semiconducting CNT with a diameter of 1.5 nm may exhibit low off-state current of about 1 × 10(-13) A, high current on/off ratio of larger than 1 × 10(8), negligible drain-induced off-state leakage current, and good subthreshold swing of 75 mV/DEC even at large source-drain bias and room temperature. The FBG structure is promising for CNT FETs to meet the standard for low-static-power logic electronics applications, and could also be utilized for building FETs using other small band gap semiconductors to suppress leakage current.

  15. PREDICTION OF LEAKAGE FLOW AND ROTORDYNAMIC CHARACTERISTICS FOR AN ECCENTRIC LABYRINTH GAS SEAL

    Directory of Open Access Journals (Sweden)

    MOHAMED KAMOUNI

    2017-11-01

    Full Text Available Labyrinth seals are key elements to limit leakage flow between rotating and stationary parts of turbo machines. However, these seals can modify the rotordynamic stability of machines. Thus, accurate predictions of static and dynamic behaviour for labyrinth seals are very important to optimize efficiency and operating conditions of rotating machines using this kind of seals. The present work contributes by a numerical model based on CFD computation to predict leakage flow and rotordynamic coefficients for a short eccentric labyrinth seal with four teeth fixed on the rotor. The developed model accuracy has been validated on experimental measurements of the pressure distribution along and around the seal which drops from 110770 Pa at the seal inlet to 103300 Pa at the seal outlet. A parametric study has been conducted to show the effect of pressure ratio and inlet swirl ratio on leakage flow and rotordynamic coefficients of the seal. In this study, the outlet pressure is kept constant but the inlet/outlet pressure ratio varies from 1.072 to 8 while three inlet swirl ratios (0, 0.5 and 1 are considered. Obtained results of this work are presented to help designers and industrials optimizing operating conditions and improving performances of this kind of seals.

  16. Suppression of photo-leakage current in amorphous silicon thin-film transistors by n-doped nanocrystalline silicon

    International Nuclear Information System (INIS)

    Lin, Hung-Chien; Ho, King-Yuan; Hsu, Chih-Chieh; Yan, Jing-Yi; Ho, Jia-Chong

    2011-01-01

    The reduction of photo-leakage current of amorphous silicon thin-film transistors (a-Si TFTs) is investigated and is found to be successfully suppressed by the use of an n-doped nanocrystalline silicon layer (n+ nc-Si) as an ohmic contact layer. The shallow-level defects of n+ nc-Si can become trapping centres of photo-induced electrons as the a-Si TFT is operated under light illumination. A lower oxygen concentration during n+ nc-Si deposition can increase the creation of shallow-level defects and improve the contrast ratio of active matrix organic light-emitting diode panels.

  17. Research and development of a high-temperature helium-leak detection system (joint research). Part 1 survey on leakage events and current leak detection technology

    Energy Technology Data Exchange (ETDEWEB)

    Sakaba, Nariaki; Nakazawa, Toshio; Kawasaki, Kozo [Japan Atomic Energy Research Inst., Oarai, Ibaraki (Japan). Oarai Research Establishment; Urakami, Masao; Saisyu, Sadanori [Japan Atomic Power Co., Tokyo (Japan)

    2003-03-01

    In High Temperature Gas-cooled Reactors (HTGR), the detection of leakage of helium at an early stage is very important for the safety and stability of operations. Since helium is a colourless gas, it is generally difficult to identify the location and the amount of leakage when very little leakage has occurred. The purpose of this R and D is to develop a helium leak detection system for the high temperature environment appropriate to the HTGR. As the first step in the development, this paper describes the result of surveying leakage events at nuclear facilities inside and outside Japan and current gas leakage detection technology to adapt optical-fibre detection technology to HTGRs. (author)

  18. Carrier Transport of Silver Nanowire Contact to p-GaN and its Influence on Leakage Current of LEDs

    Science.gov (United States)

    Oh, Munsik; Kang, Jae-Wook; Kim, Hyunsoo

    2018-03-01

    The authors investigated the silver nanowires (AgNWs) contact formed on p-GaN. Transmission line model applied to the AgNWs contact to p-GaN produced near ohmic contact with a specific contact resistance (ρ sc) of 10-1˜10-4 Ω·cm2. Noticeably, the contact resistance had a strong bias-voltage (or current-density) dependence associated with a local joule heating effect. Current-voltage-temperature (I-V-T) measurement revealed a strong temperature dependence with respect to ρ sc, indicating that the temperature played a key role of an enhanced carrier transport. The local joule heating at AgNW/GaN interface, however, resulted in a generation of leakage current of light-emitting diodes (LEDs) caused by degradation of AgNW contact.

  19. Experimental investigation of localized stress-induced leakage current distribution in gate dielectrics using array test circuit

    Science.gov (United States)

    Park, Hyeonwoo; Teramoto, Akinobu; Kuroda, Rihito; Suwa, Tomoyuki; Sugawa, Shigetoshi

    2018-04-01

    Localized stress-induced leakage current (SILC) has become a major problem in the reliability of flash memories. To reduce it, clarifying the SILC mechanism is important, and statistical measurement and analysis have to be carried out. In this study, we applied an array test circuit that can measure the SILC distribution of more than 80,000 nMOSFETs with various gate areas at a high speed (within 80 s) and a high accuracy (on the 10-17 A current order). The results clarified that the distributions of localized SILC in different gate areas follow a universal distribution assuming the same SILC defect density distribution per unit area, and the current of localized SILC defects does not scale down with the gate area. Moreover, the distribution of SILC defect density and its dependence on the oxide field for measurement (E OX-Measure) were experimentally determined for fabricated devices.

  20. Defect generation and activation processes in HfO{sub 2} thin films: Contributions to stress-induced leakage currents

    Energy Technology Data Exchange (ETDEWEB)

    Oettking, Rolf; Leitsmann, Roman; Lazarevic, Florian; Plaenitz, Philipp [AQcomputare, Business Unit MATcalc, Chemnitz (Germany); Kupke, Steve; Roll, Guntrade; Slesazeck, Stefan [NaMLab gGmbH, Dresden (Germany); Nadimi, Ebrahim [AQcomputare, Business Unit MATcalc, Chemnitz (Germany); K.N. Toosi University of Technology, Faculty of Electrical Engineering, Tehran (Iran, Islamic Republic of); Trentzsch, Martin [Globalfoundries Dresden, Dresden (Germany); Mikolajick, Thomas [Technische Universitaet Dresden, Fakultaet Elektrotechnik und Informationstechnik, Institut fuer Halbleiter- und Mikrosystemtechnik, Dresden (Germany)

    2015-03-01

    An important source of degradation in thin dielectric material layers is the generation and migration of oxygen vacancies. We investigated the formation of Frenkel pairs (FPs) in HfO{sub 2} as the first structural step for the creation of new defects as well as the migration of preexisting and newly built oxygen vacancies by nudged elastic band (NEB) calculations and stress induced leakage current (SILC) experiments. The analysis indicates, that for neutral systems no stable intimate FPs are built, whereas for the charge states q = ± 2 FPs are formed at threefold and at fourfold coordinated oxygen lattice sites. Their generation and annihilation rate are in equilibrium according to the Boltzmann statistics. Distant FPs (stable defects) are unlikely to build due to high formation energies and therefore cannot be accounted for the measured gate leakage current increase of nMOSFETs under constant voltage stress. The negatively charged oxygen vacancies were found to be very immobile in contrast to positively charged V{sub 0}'s with a low migration barrier that coincides well with the experimentally obtained activation energy. We show that rather the activation of preexisting defects and migration towards the interface than the defect generation are the cause for the gate oxide degradation. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  1. Millennial-scale Agulhas Current variability and its implications for salt-leakage through the Indian–Atlantic Ocean Gateway

    NARCIS (Netherlands)

    Simon, M.H.; Arthur, K.L.; Hall, I.R.; Peeters, F.J.C.; Loveday, B.R.; Barker, S.; Zahn, R.

    2013-01-01

    The inter-ocean exchange of warm and salt-enriched waters around South Africa (Agulhas leakage), may have played an important role in the mechanism of deglaciations. Paleoceanographic reconstructions from the Agulhas leakage corridor show that leakage maxima occurred during glacial terminations.

  2. The effect of cathode bias (field effect) on the surface leakage current of CdZnTe detectors

    International Nuclear Information System (INIS)

    Bolotnikov, A.E.; Hubert Chen, C.M.; Cook, W.R.; Harrison, F.A.; Kuvvetli, I.; Schindler, S.M.; Stahle, C.M.; Parker, B.H.

    2003-01-01

    Surface resistivity is an important parameter of multi-electrode CZT detectors such as coplanar-grid, strip, or pixel detectors. Low surface resistivity results in a high leakage current and affects the charge collection efficiency in the areas near contacts. Thus, it is always desirable to have the surface resistivity of the detector as high as possible. In the past the most significant efforts were concentrated to develop passivation techniques for CZT detectors. However, as we found, the field-effect caused by a bias applied on the cathode can significantly reduce the surface resistivity even though the detector surface was carefully passivated. In this paper we illustrate that the field-effect is a common feature of the CZT multi-electrode detectors, and discuss how to take advantage of this effect to improve the surface resistivity of CZT detectors

  3. Super high voltage Schottky diode with low leakage current for x- and γ-ray detector application

    International Nuclear Information System (INIS)

    Kosyachenko, L. A.; Sklyarchuk, V. M.; Sklyarchuk, O. F.; Maslyanchuk, O. L.; Gnatyuk, V. A.; Aoki, T.

    2009-01-01

    A significant improvement in x-/γ-ray detector performance has been achieved by forming both rectifying and near-Ohmic contacts by the deposition of Ni on opposite surfaces of semi-insulating CdTe crystals pretreated by special chemical etching and Ar-ion bombardment with different parameters. The reduced injection of the minority carriers from the near-Ohmic contact in the neutral part of the diode provides low leakage current even at high bias ( 2 at 2000 V and 293 K). The electrical properties of the detectors are well described quantitatively by the generation-recombination Sah-Noyce-Shockley theory excepting the high reverse voltage range where some injection of minority carriers takes place

  4. A study on cross-talk nerve stimulation: electrode placement and current leakage lid

    Directory of Open Access Journals (Sweden)

    Nicolas Julémont

    2016-07-01

    Full Text Available Cross-talk phenomena should be avoided when stimulating nerves. One option to limit the current spread is to use tripolar electrodes, but at the cost of increasing the number of wires connection. This should be avoided since cables must be thin and compliant. We investigated the impact of the central electrode position and of current spread due to a gap between book and lid on cross-talk, in a set of tripolar or quasi-tripolar configurations.

  5. Voltage current characteristics of type III superconductors

    International Nuclear Information System (INIS)

    Dorofejev, G.L.; Imenitov, A.B.; Klimenko, E.Y.

    1980-01-01

    An adequate description of voltage-current characteristics is important in order to understand the nature of high critical current for the electrodynamic construction of type-III superconductors and for commercial superconductor specification. Homogeneous monofilament and multifilament Nb-Ti, Nb-Zr,Nb 3 Sn wires were investigated in different ranges of magnetic field, temperature and current. The shape of the voltage-current characteristics of multifilament wires, and the parameter's dependence on temperature and magnetic field may be explained qualitatively by the longitudinal heterogeneous nature of the filaments. A method of attaining the complete specification of the wire's electro-physical properties is proposed. It includes the traditional description of a critical surface (i.e. the surface corresponding to a certain conventional effective resistivity in T,B,J-space) and a description of any increasing parameter that depends on B and T. (author)

  6. Voltage current characteristics of type III superconductors

    Energy Technology Data Exchange (ETDEWEB)

    Dorofeiev, G L; Imenitov, A B; Klimenko, E Y [Gosudarstvennyi Komitet po Ispol' zovaniyu Atomnoi Ehnergii SSSR, Moscow. Inst. Atomnoi Ehnergii

    1980-06-01

    An adequate description of voltage-current characteristics is important in order to understand the nature of high critical current for the electrodynamic construction of type-III superconductors and for commercial superconductor specification. Homogeneous monofilament and multifilament Nb-Ti, Nb-Zr,Nb/sub 3/Sn wires were investigated in different ranges of magnetic field, temperature and current. The shape of the voltage-current characteristics of multifilament wires, and the parameter's dependence on temperature and magnetic field may be explained qualitatively by the longitudinal heterogeneous nature of the filaments. A method of attaining the complete specification of the wire's electro-physical properties is proposed. It includes the traditional description of a critical surface (i.e. the surface corresponding to a certain conventional effective resistivity in T,B,J-space) and a description of any increasing parameter that depends on B and T.

  7. Study of the tunnelling initiated leakage current through the carbon nanotube embedded gate oxide in metal oxide semiconductor structures

    International Nuclear Information System (INIS)

    Chakraborty, Gargi; Sarkar, C K; Lu, X B; Dai, J Y

    2008-01-01

    The tunnelling currents through the gate dielectric partly embedded with semiconducting single-wall carbon nanotubes in a silicon metal-oxide-semiconductor (MOS) structure have been investigated. The application of the gate voltage to such an MOS device results in the band bending at the interface of the partly embedded oxide dielectric and the surface of the silicon, initiating tunnelling through the gate oxide responsible for the gate leakage current whenever the thickness of the oxide is scaled. A model for silicon MOS structures, where carbon nanotubes are confined in a narrow layer embedded in the gate dielectric, is proposed to investigate the direct and the Fowler-Nordheim (FN) tunnelling currents of such systems. The idea of embedding such elements in the gate oxide is to assess the possibility for charge storage for memory device applications. Comparing the FN tunnelling onset voltage between the pure gate oxide and the gate oxide embedded with carbon nanotubes, it is found that the onset voltage decreases with the introduction of the nanotubes. The direct tunnelling current has also been studied at very low gate bias, for the thin oxide MOS structure which plays an important role in scaling down the MOS transistors. The FN tunnelling current has also been studied with varying nanotube diameter

  8. A new regime of the Agulhas Current Retroflection: Turbulent Choking of Indian-Atlantic leakag

    NARCIS (Netherlands)

    le Bars, D.L.B.; de Ruijter, W.P.M.; Dijkstra, H.A.

    2012-01-01

    An analysis of the Indian Ocean circulation and the Agulhas Current retroflection is carried out using a primitive equation model with simplified coastline and flat bottom. Four configurations with 0.258 and 0.18 horizontal resolution and in barotropic and baroclinic cases are considered. The wind

  9. Effect of incorporation of nitrogen atoms in Al2O3 gate dielectric of wide-bandgap-semiconductor MOSFET on gate leakage current and negative fixed charge

    Science.gov (United States)

    Kojima, Eiji; Chokawa, Kenta; Shirakawa, Hiroki; Araidai, Masaaki; Hosoi, Takuji; Watanabe, Heiji; Shiraishi, Kenji

    2018-06-01

    We performed first-principle calculations to investigate the effect of incorporation of N atoms into Al2O3 gate dielectrics. Our calculations show that the defect levels generated by VO in Al2O3 are the origin of the stress-induced gate leakage current and that VOVAl complexes in Al2O3 cause negative fixed charge. We revealed that the incorporation of N atoms into Al2O3 eliminates the VO defect levels, reducing the stress-induced gate leakage current. Moreover, this suppresses the formation of negatively charged VOVAl complexes. Therefore, AlON can reduce both stress-induced gate leakage current and negative fixed charge in wide-bandgap-semiconductor MOSFETs.

  10. Current distribution characteristics of superconducting parallel circuits

    International Nuclear Information System (INIS)

    Mori, K.; Suzuki, Y.; Hara, N.; Kitamura, M.; Tominaka, T.

    1994-01-01

    In order to increase the current carrying capacity of the current path of the superconducting magnet system, the portion of parallel circuits such as insulated multi-strand cables or parallel persistent current switches (PCS) are made. In superconducting parallel circuits of an insulated multi-strand cable or a parallel persistent current switch (PCS), the current distribution during the current sweep, the persistent mode, and the quench process were investigated. In order to measure the current distribution, two methods were used. (1) Each strand was surrounded with a pure iron core with the air gap. In the air gap, a Hall probe was located. The accuracy of this method was deteriorated by the magnetic hysteresis of iron. (2) The Rogowski coil without iron was used for the current measurement of each path in a 4-parallel PCS. As a result, it was shown that the current distribution characteristics of a parallel PCS is very similar to that of an insulated multi-strand cable for the quench process

  11. Analytical models for the 2DEG concentration and gate leakage current in AlGaN/GaN HEMTs

    Science.gov (United States)

    Ahmed, Nadim; Dutta, Aloke K.

    2017-06-01

    In this paper, we present a completely analytical model for the 2DEG concentration in AlGaN/GaN HEMTs as a function of gate bias, considering the donor-like trap states present at the metal/AlGaN interface to be the primary source of 2DEG carriers. To the best of our knowledge, this is a completely new contribution of this work. The electric field in the AlGaN layer is calculated using this model, which is further used to model the gate leakage current under reverse bias. We have modified the existing TTT (Thermionic Trap-Assisted Tunneling) current model, taking into account the effect of both metal/AlGaN interface traps as well as AlGaN bulk traps. The gate current under forward bias is also modeled using the existing thermionic emission model, approximating it by its Taylor series expansion. To take into account the effect of non-zero drain-source bias (VDS), an empirical fitting parameter is introduced in order to model the channel voltage in terms of VDS. The results of our models have been compared with the experimental data reported in the literature for three different devices, and the match is found to be excellent for both forward and reverse bias as well as for zero and non-zero VDS.

  12. Low-leakage-current AlGaN/GaN HEMTs on Si substrates with partially Mg-doped GaN buffer layer by metal organic chemical vapor deposition

    International Nuclear Information System (INIS)

    Li Ming; Wang Yong; Wong Kai-Ming; Lau Kei-May

    2014-01-01

    High-performance low-leakage-current AlGaN/GaN high electron mobility transistors (HEMTs) on silicon (111) substrates grown by metal organic chemical vapor deposition (MOCVD) with a novel partially Magnesium (Mg)-doped GaN buffer scheme have been fabricated successfully. The growth and DC results were compared between Mg-doped GaN buffer layer and a unintentionally one. A 1-μm gate-length transistor with Mg-doped buffer layer exhibited an OFF-state drain leakage current of 8.3 × 10 −8 A/mm, to our best knowledge, which is the lowest value reported for MOCVD-grown AlGaN/GaN HEMTs on Si featuring the same dimension and structure. The RF characteristics of 0.25-μm gate length T-shaped gate HEMTs were also investigated

  13. Comparison of CT characteristics of extravertebral cement leakages after vertebroplasty performed by different navigation and injection techniques

    International Nuclear Information System (INIS)

    Kaso, G.; Horvath, Z.; Doczi, T.; Szenohradszky, K.; Sandor, J.

    2008-01-01

    This study was intended to assess the results of post-operative CT scans in three groups of patients following percutaneous vertebroplasty (VP) using different navigation and injection methods, in an attempt to explain the radiological characteristics of extravertebral cement leakage with relation to needle placement and focused on the ventral epidural accumulation of bone cement. Furthermore, we have suggested a morphological (and functional) classification of the types of cement leakage. Between July 2001 and February 2005, 123 percutaneous VP procedures were performed during 75 sessions in 65 patients for treatment of painful osteoporotic vertebral body compression fractures. These included: group 1: 28 patients, 33 sessions; 50 right sided unilateral VP under fluoroscopic control with central position of the tip of the needle within the bone marrow. Group 2: 27 patients, 28 sessions; 50 bilateral VP under fluoroscopic control with separate cement injections into both 'hemivertebrae'. Group 3: 14 patients, 14 sessions; 23 bilateral VP navigated by frameless stereotaxy (neuronavigation). Needles were positioned strictly into the lateral thirds of the vertebral bodies. Leakages were classified as epidural, foraminal, intradiscal, venous paravertebral, compact extravertebral on the post-operative CT scans, and their frequency was compared in relation to the navigation method and the position of the tip of the needle. Group 1: extravertebral cement was detected in 23 patients (82 %), and in 35 (70 %) of the 50 vertebrae treated (ventral epidural: 23 vertebrae = 46 %; intradiscal: 12 vertebrae = 24 %; venous paravertebral: 8 vertebrae = 16 %; intraforaminal: 7 vertebrae = 14 %; and compact extravertebral: 3 vertebrae = 6 %). Group 2: extravertebral cement was detected in 20 patients (74 %), and in 38 (76 %) of the 50 vertebrae treated (ventral epidural: 12 vertebrae = 24 %; intradiscal: 12 vertebrae = 24 %; venous paravertebral: 9 vertebrae = 18 %; and foraminal: 1

  14. The Current Cluster Policy: Essence and Characteristics

    Directory of Open Access Journals (Sweden)

    Onipko Tetiana A.

    2017-05-01

    Full Text Available The article is aimed at defining essence of the current cluster policy and its characteristics. It was specified that, in the process of developing and implementing regional, innovation and entrepreneurial policies, many governments drew attention to the clustering of economy as a means of achieving a high level of regional and national competitiveness. The current cluster policy needs to be integrated, that is, to unify different policies, programs, and means. One of the characteristics of the current cluster policy is its orientation towards public-private partnership. The efficient form of such a partnership is cluster organizations. The author’s vision of the current cluster policy is that both the State and the private sector should be parties to it. Emphasis has been placed on the need to support in Ukraine, at the State level, the innovation clusters that facilitate modernization of the existing economic sectors by combining the traditions and the challenges of modernity. It has been concluded that social organizations could be involved in the process of development and implementation of cluster policy in Ukraine. A prospect for further research can be development of the «intellectual specialization» strategy for regions as an important constituent of the current cluster policy.

  15. The Leakage Current Improvement of a Ni-Silicided SiGe/Si Junction Using a Si Cap Layer and the PAI Technique

    International Nuclear Information System (INIS)

    Chang Jian-Guang; Wu Chun-Bo; Ji Xiao-Li; Ma Hao-Wen; Yan Feng; Shi Yi; Zhang Rong

    2012-01-01

    We investigate the leakage current of ultra-shallow Ni-silicided SiGe/Si junctions for 45 nm CMOS technology using a Si cap layer and the pre-amorphization implantation (PAI) process. It is found that with the conventional Ni silicide method, the leakage current of a p + (SiGe)—n(Si) junction is large and attributed to band-to-band tunneling and the generation-recombination process. The two leakage contributors can be suppressed quite effectively when a Si cap layer is added in the Ni silicide method. The leakage reduction is about one order of magnitude and could be associated with the suppression of the agglomeration of the Ni germano-silicide film. In addition, the PAI process after the application of a Si cap layer has little effect on improving the junction leakage but reduces the sheet resistance of the silicide film. As a result, the novel Ni silicide method using a Si cap combined with PAI is a promising choice for SiGe junctions in advanced technology. (cross-disciplinary physics and related areas of science and technology)

  16. Voltage current characteristics of type III superconductors

    Science.gov (United States)

    Dorofejev, G. L.; Imenitov, A. B.; Klimenko, E. Yu.

    1980-06-01

    An adequate description of voltage-current characteristics is important in order to understand the nature of high critical current for the electrodynamic construction of type-III superconductors and for commercial superconductor specification. Homogenious monofilament and multifilament Nb-Ti, Nb-Zr, Nb 3Sn wires were investigated in different ranges of magnetic field, temperature and current. The longitudinal electric field for homogenious wires may be described by E=J ρnexp- T c/T 0+ T/T 0+ B/B 0+ J/J 0, where To, Bo, Jo are the increasing parameters, which depend weakly on B and T, of the electric field. The shape of the voltage-current characteristics of multifilament wires, and the parameter's dependence on temperature and magnetic field may be explained qualitatively by the longitudinal heterogeneous nature of the filaments. A method of attaining the complete specification of the wire's electro-physical properties is proposed. It includes the traditional description of a critical surface (ie the surface corresponding to a certain conventional effective resistivity in T, B, J - space) and a description of any increasing parameter that depends on B and T.

  17. Current Distribution Characteristics of CFRP Panels

    Science.gov (United States)

    Yamamoto, Kazuo

    CFRP (Carbon Fiber Reinforced Plastic) is widely used in the structures of aircrafts, automobiles, wing turbines, and rockets because of its qualities of high mechanical strength, low weight, fatigue resistance, and dimensional stability. However, these structures are often at risk of being struck by lightning. When lightning strikes such structures and lightning current flows through the CFRP, it may be structurally damaged because of the impact of the lightning strike or ignitions between layers. If there are electronic systems near the CFRP, they may break down or malfunction because of the resulting electromagnetic disturbance. In fact, the generation mechanisms of these breakdowns and malfunctions depend on the current distribution in the CFRP. Hence, it is critical to clarify the current distribution in various kinds of CFRPs. In this study, two kinds of CFRP panels—one composed of quasi-isotropic lamination layers and the other composed of 0°/90° lamination layers of unidirectional CFRP prepregs—are used to investigate the dependence of current distribution on the nature of the lamination layers. The current distribution measurements and simulations for CFRP panels are compared with those for a same-sized aluminum plate. The knowledge of these current distribution characteristics would be very useful for designing the CFRP structures of aircrafts, automobiles, wing turbines, rockets, etc. in the future.

  18. LEAKAGE CHARACTERISTICS OF BASE OF RIVERBANK BY SELF POTENTIAL METHOD AND EXAMINATION OF EFFECTIVENESS OF SELF POTENTIAL METHOD TO HEALTH MONITORING OF BASE OF RIVERBANK

    Science.gov (United States)

    Matsumoto, Kensaku; Okada, Takashi; Takeuchi, Atsuo; Yazawa, Masato; Uchibori, Sumio; Shimizu, Yoshihiko

    Field Measurement of Self Potential Method using Copper Sulfate Electrode was performed in base of riverbank in WATARASE River, where has leakage problem to examine leakage characteristics. Measurement results showed typical S-shape what indicates existence of flow groundwater. The results agreed with measurement results by Ministry of Land, Infrastructure and Transport with good accuracy. Results of 1m depth ground temperature detection and Chain-Array detection showed good agreement with results of the Self Potential Method. Correlation between Self Potential value and groundwater velocity was examined model experiment. The result showed apparent correlation. These results indicate that the Self Potential Method was effective method to examine the characteristics of ground water of base of riverbank in leakage problem.

  19. Signal amplification and leakage current suppression in amorphous silicon p-i-n diodes by field profile tailoring

    International Nuclear Information System (INIS)

    Hong, W.S.; Zhong, F.; Mireshghi, A.; Perez-Mendez, V.

    1999-01-01

    The performance of amorphous silicon p-i-n diodes as radiation detectors in terms of signal amplitude can be greatly improved when there is a built-in signal gain mechanism. The authors describe an avalanche gain mechanism which is achieved by introducing stacked intrinsic, p-type, and n-type layers into the diode structure. They replaced the intrinsic layer of the conventional p-i-n diode with i 1 -p-i 2 -n-i 3 multilayers. The i 2 layer (typically 1 ∼ 3 microm) achieves an electric field > 10 6 V/cm, while maintaining the p-i interfaces to the metallic contact at electric fields 4 V/cm, when the diode is fully depleted. For use in photo-diode applications the whole structure is less than 10 microm thick. Avalanche gains of 10 ∼ 50 can be obtained when the diode is biased to ∼ 500 V. Also, dividing the electrodes to strips of 2 microm width and 20 microm pitch reduced the leakage current up to an order of magnitude, and increased light transmission without creating inactive regions

  20. Liquid helium boil-off measurements of heat leakage from sinter-forged BSCCO current leads under DC and AC conditions

    International Nuclear Information System (INIS)

    Cha, Y.S.; Niemann, R.C.; Hull, J.R.; Youngdahl, C.A.; Lanagan, M.T.; Nakade, M.; Hara, T.

    1995-06-01

    Liquid helium boil-off experiments are conducted to determine the heat leakage rate of a pair of BSCCO 2223 high-temperature superconductor current leads made by sinter forging. The experiments are carried out in both DC and AC conditions and with and without an intermediate heat intercept. Current ranges are from 0-500 A for DC tests and 0-1,000 A rms for AC tests. The leads are self-cooled. Results show that magnetic hysteresis (AC) losses for both the BSCCO leads and the low-temperature superconductor current jumper are small for the current range. It is shown that significant reduction in heat leakage rate (liquid helium boil-off rate) is realized by using the BSCCO superconductor leads. At 100 A, the heat leakage rate of the BSCCO/copper binary lead is approximately 29% of that of the conventional copper lead. Further reduction in liquid helium boil-off rate can be achieved by using an intermediate heat intercept. For example, at 500 K, the heat leakage rate of the BSCCO/copper binary lead is only 7% of that of the conventional copper lead when an intermediate heat intercept is used

  1. Temperature-dependent leakage current behavior of epitaxial Bi0.5Na0.5TiO3-based thin films made by pulsed laser deposition

    Science.gov (United States)

    Hejazi, M. M.; Safari, A.

    2011-11-01

    This paper discusses the electrical conduction mechanisms in a 0.88 Bi0.5Na0.5TiO3-0.08 Bi0.5K0.5TiO3-0.04 BaTiO3 thin film in the temperature range of 200-350 K. The film was deposited on a SrRuO3/SrTiO3 substrate by pulsed laser deposition technique. At all measurement temperatures, the leakage current behavior of the film matched well with the Lampert's triangle bounded by three straight lines of different slopes. The relative location of the triangle sides varied with temperature due to its effect on the density of charge carriers and un-filled traps. At low electric fields, the ohmic conduction governed the leakage mechanism. The calculated activation energy of the trap is 0.19 eV implying the presence of shallow traps in the film. With increasing the applied field, an abrupt increase in the leakage current was observed. This was attributed to a trap-filling process by the injected carriers. At sufficiently high electric fields, the leakage current obeyed the Child's trap-free square law suggesting the space charge limited current was the dominant mechanism.

  2. Direct observation of the leakage current in epitaxial diamond Schottky barrier devices by conductive-probe atomic force microscopy and Raman imaging

    Science.gov (United States)

    Alvarez, J.; Boutchich, M.; Kleider, J. P.; Teraji, T.; Koide, Y.

    2014-09-01

    The origin of the high leakage current measured in several vertical-type diamond Schottky devices is conjointly investigated by conducting probe atomic force microscopy and confocal micro-Raman/photoluminescence imaging analysis. Local areas characterized by a strong decrease of the local resistance (5-6 orders of magnitude drop) with respect to their close surrounding have been identified in several different regions of the sample surface. The same local areas, also referenced as electrical hot-spots, reveal a slightly constrained diamond lattice and three dominant Raman bands in the low-wavenumber region (590, 914 and 1040 cm-1). These latter bands are usually assigned to the vibrational modes involving boron impurities and its possible complexes that can electrically act as traps for charge carriers. Local current-voltage measurements performed at the hot-spots point out a trap-filled-limited current as the main conduction mechanism favouring the leakage current in the Schottky devices.

  3. On the problem of internal optical loss and current leakage in laser heterostructures based on AlGaInAs/InP solid solutions

    International Nuclear Information System (INIS)

    Veselov, D. A.; Shashkin, I. S.; Bakhvalov, K. V.; Lyutetskiy, A. V.; Pikhtin, N. A.; Rastegaeva, M. G.; Slipchenko, S. O.; Bechvay, E. A.; Strelets, V. A.; Shamakhov, V. V.; Tarasov, I. S.

    2016-01-01

    Semiconductor lasers based on MOCVD-grown AlGaInAs/InP separate-confinement heterostructures are studied. It is shown that raising only the energy-gap width of AlGaInAs-waveguides without the introduction of additional barriers results in more pronounced current leakage into the cladding layers. It is found that the introduction of additional barrier layers at the waveguide–cladding-layer interface blocks current leakage into the cladding layers, but results in an increase in the internal optical loss with increasing pump current. It is experimentally demonstrated that the introduction of blocking layers makes it possible to obtain maximum values of the internal quantum efficiency of stimulated emission (92%) and continuouswave output optical power (3.2 W) in semiconductor lasers in the eye-safe wavelength range (1400–1600 nm).

  4. On the problem of internal optical loss and current leakage in laser heterostructures based on AlGaInAs/InP solid solutions

    Energy Technology Data Exchange (ETDEWEB)

    Veselov, D. A., E-mail: dmitriy90@list.ru; Shashkin, I. S.; Bakhvalov, K. V.; Lyutetskiy, A. V.; Pikhtin, N. A.; Rastegaeva, M. G.; Slipchenko, S. O.; Bechvay, E. A.; Strelets, V. A.; Shamakhov, V. V.; Tarasov, I. S. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation)

    2016-09-15

    Semiconductor lasers based on MOCVD-grown AlGaInAs/InP separate-confinement heterostructures are studied. It is shown that raising only the energy-gap width of AlGaInAs-waveguides without the introduction of additional barriers results in more pronounced current leakage into the cladding layers. It is found that the introduction of additional barrier layers at the waveguide–cladding-layer interface blocks current leakage into the cladding layers, but results in an increase in the internal optical loss with increasing pump current. It is experimentally demonstrated that the introduction of blocking layers makes it possible to obtain maximum values of the internal quantum efficiency of stimulated emission (92%) and continuouswave output optical power (3.2 W) in semiconductor lasers in the eye-safe wavelength range (1400–1600 nm).

  5. Leakage current suppression with a combination of planarized gate and overlap/off-set structure in metal-induced laterally crystallized polycrystalline-silicon thin-film transistors

    Science.gov (United States)

    Chae, Hee Jae; Seok, Ki Hwan; Lee, Sol Kyu; Joo, Seung Ki

    2018-04-01

    A novel inverted staggered metal-induced laterally crystallized (MILC) polycrystalline-silicon (poly-Si) thin-film transistors (TFTs) with a combination of a planarized gate and an overlap/off-set at the source-gate/drain-gate structure were fabricated and characterized. While the MILC process is advantageous for fabricating inverted staggered poly-Si TFTs, MILC TFTs reveal higher leakage current than TFTs crystallized by other processes due to their high trap density of Ni contamination. Due to this drawback, the planarized gate and overlap/off-set structure were applied to inverted staggered MILC TFTs. The proposed device shows drastic suppression of leakage current and pinning phenomenon by reducing the lateral electric field and the space-charge limited current from the gate to the drain.

  6. Direct observation of the leakage current in epitaxial diamond Schottky barrier devices by conductive-probe atomic force microscopy and Raman imaging

    OpenAIRE

    Alvarez, Jose; Boutchich, M.; Kleider, J. P.; Teraji, T.; Koide, Y.

    2014-01-01

    The origin of the high leakage current measured in several vertical-type diamond Schottky devices is conjointly investigated by conducting probe atomic force microscopy (CP-AFM) and confocal micro-Raman/Photoluminescence (PL) imaging analysis. Local areas characterized by a strong decrease of the local resistance (5-6 orders of magnitude drop) with respect to their close surrounding have been identified in several different regions of the sample surface. The same local areas, also referenced ...

  7. Effects of doping on ferroelectric properties and leakage current behavior of KNN-LT-LS thin films on SrTiO3 substrate

    Science.gov (United States)

    Abazari, M.; Safari, A.

    2009-05-01

    We report the effects of Ba, Ti, and Mn dopants on ferroelectric polarization and leakage current of (K0.44Na0.52Li0.04)(Nb0.84Ta0.1Sb0.06)O3 (KNN-LT-LS) thin films deposited by pulsed laser deposition. It is shown that donor dopants such as Ba2+, which increased the resistivity in bulk KNN-LT-LS, had an opposite effect in the thin film. Ti4+ as an acceptor B-site dopant reduces the leakage current by an order of magnitude, while the polarization values showed a slight degradation. Mn4+, however, was found to effectively suppress the leakage current by over two orders of magnitude while enhancing the polarization, with 15 and 23 μC/cm2 remanent and saturated polarization, whose values are ˜70% and 82% of the reported values for bulk composition. This phenomenon has been associated with the dual effect of Mn4+ in KNN-LT-LS thin film, by substituting both A- and B-site cations. A detailed description on how each dopant affects the concentrations of vacancies in the lattice is presented. Mn-doped KNN-LT-LS thin films are shown to be a promising candidate for lead-free thin films and applications.

  8. Leakage characterization of top select transistor for program disturbance optimization in 3D NAND flash

    Science.gov (United States)

    Zhang, Yu; Jin, Lei; Jiang, Dandan; Zou, Xingqi; Zhao, Zhiguo; Gao, Jing; Zeng, Ming; Zhou, Wenbin; Tang, Zhaoyun; Huo, Zongliang

    2018-03-01

    In order to optimize program disturbance characteristics effectively, a characterization approach that measures top select transistor (TSG) leakage from bit-line is proposed to quantify TSG leakage under program inhibit condition in 3D NAND flash memory. Based on this approach, the effect of Vth modulation of two-cell TSG on leakage is evaluated. By checking the dependence of leakage and corresponding program disturbance on upper and lower TSG Vth, this approach is validated. The optimal Vth pattern with high upper TSG Vth and low lower TSG Vth has been suggested for low leakage current and high boosted channel potential. It is found that upper TSG plays dominant role in preventing drain induced barrier lowering (DIBL) leakage from boosted channel to bit-line, while lower TSG assists to further suppress TSG leakage by providing smooth potential drop from dummy WL to edge of TSG, consequently suppressing trap assisted band-to-band tunneling current (BTBT) between dummy WL and TSG.

  9. An Experimental Study of Emission and Combustion Characteristics of Marine Diesel Engine in Case of Cylinder Valves Leakage

    Directory of Open Access Journals (Sweden)

    Kowalski Jerzy

    2015-09-01

    Full Text Available Presented paper shows the results of the laboratory tests on the relationship between throttling of both air intake duct and exhaust gas duct and a gaseous emission from the marine engine. The object of research is a laboratory, four-stroke, DI diesel engine, operated at loads from 50 kW to 250 kW at a constant speed equal to 750 rpm. During the laboratory tests over 50 parameters of the engine were measured with its technical condition recognized as a „working properly” and with simulated leakage of both air intake valve and exhaust gas valve on the second cylinder. The results of this laboratory research confirm that the leakage of cylinder valves causes no significant changes of the thermodynamic parameters of the engine. Simulated leakages through the inlet and exhaust valve caused a significant increase in fuel consumption of the engine. Valve leakages cause an increase of the exhaust gas temperature behind the cylinder with leakage and behind other cylinders. The exhaust gas temperature increase is relatively small and clearly visible only at low loads of the engine. The increase of the temperature and pressure of the charging air behind the intercooler were observed too. Charging air temperature is significantly higher during the engine operation with inlet valve leakage. The study results show significant increases of the CO, NOx and CO2 emission for all the mentioned malfunctions. The conclusion is that the results of measurements of the composition of the exhaust gas may contain valuable diagnostic information about the technical condition of the air intake duct and the exhaust gas duct of the marine engine.

  10. Leakage current behavior in lead-free ferroelectric (K,Na)NbO3-LiTaO3-LiSbO3 thin films

    Science.gov (United States)

    Abazari, M.; Safari, A.

    2010-12-01

    Conduction mechanisms in epitaxial (001)-oriented pure and 1 mol % Mn-doped (K0.44,Na0.52,Li0.04)(Nb0.84,Ta0.1,Sb0.06)O3 (KNN-LT-LS) thin films on SrTiO3 substrate were investigated. Temperature dependence of leakage current density was measured as a function of applied electric field in the range of 200-380 K. It was shown that the different transport mechanisms dominate in pure and Mn-doped thin films. In pure (KNN-LT-LS) thin films, Poole-Frenkel emission was found to be responsible for the leakage, while Schottky emission was the dominant mechanism in Mn-doped thin films at higher electric fields. This is a remarkable yet clear indication of effect of 1 mol % Mn on the resistive behavior of such thin films.

  11. Characteristic of TPF-I Current Signals

    International Nuclear Information System (INIS)

    Kunamaspakorn, T.; Poolyarat, N.; Picha, R.; Promping, J.; Onjun, T.

    2014-01-01

    Thailand Plasma Focus I (TPF-I) is a dense plasma focus device which has been built and developed as a collaborative project among TINT, SIIT, and TU as a radiation source for academic research. This prototype device is powered by a 30 μF capacitor bank, charged at 15 kV. In this work, we assembled a Rogowski coils, which was used for measuring high speed current pulse, to capture current signals from TPF-I. The signals were then compared with the simulation results from Lee model code and found to be in good agreement. The current development status of the TPF-I will also be presented.

  12. Effect of gamma irradiation on leakage current in CMOS read-out chips for the ATLAS upgrade silicon strip tracker at the HL-LHC

    CERN Document Server

    Stucci, Stefania Antonia; Lynn, Dave; Kierstead, James; Kuczewski, Philip; van Nieuwenhuizen, Gerrit J; Rosin, Guy; Tricoli, Alessandro

    2017-01-01

    The increase of the leakage current of NMOS transistors in detector readout chips in certain 130 nm CMOS technologies during exposure to ionising radiation needs special consideration in the design of detector systems, as this can result in a large increase of the supply current and power dissipation. As part of the R&D; program for the upgrade of the ATLAS inner detector tracker for the High Luminosity upgrade of the LHC at CERN, a dedicated set of irradiations have been carried out with the $^60$Co gamma-ray source at the Brookhaven National Laboratory. Measurements will be presented that characterise the increase in the digital leakage current in the 130 nm-technology ABC130 readout chips. The variation of the current as a function of time and total ionising dose has been studied under various conditions of dose rate, temperature and power applied to the chip. The range of variation of dose rates and temperatures has been set to be close to those expected at the High Luminosity LHC, i.e. in the range 0...

  13. Occurrence, characteristics and leakage of polybrominated diphenyl ethers in leachate from municipal solid waste landfills in China

    International Nuclear Information System (INIS)

    Li, Ying; Li, Jinhui; Deng, Chao

    2014-01-01

    Raw leachate samples were collected from various municipal solid waste (MSW) landfills in a densely populated city in North China to measure the levels and compositional patterns of polybrominated diphenyl ethers (PBDEs) in leachate. The total concentration of PBDEs ranged from 4.0 to 351.2 ng/L, with an average of 73.0 ng/L. BDE-209 dominated the congeners in most of the samples, followed by BDE-47 and -99. Higher PBDEs concentrations were found in leachate from younger landfill facilities in the urban area. Pearson correlation analysis implied a potential dependence of the PBDEs level on landfill age, suspended solids and dissolved organic carbon, while the results of principal component analysis (PCA) suggested potential origins and transportation of PBDEs in leachate. The Monte Carlo method was adopted to estimate the annual leakage of PBDEs into the underground environment nationwide, based on two main scenarios: simple landfills with inadequate liner systems and composite-lined landfills with defective geomembranes. -- Highlights: • Levels and congener patterns of PBDEs in landfill leachate from China are measured. • Pollution loading of PBDEs in leachate is identified through comparative analysis. • Leachate properties perform moderate impact on the occurrence of PBDEs. • Both commercial and decomposition origins contribute to lower brominated congeners. • Leakage rate of PBDEs due to inadequate liner is estimated nationwide. -- This paper determined the levels and distribution of PBDEs in MSW landfill leachate and predicted the leakage of PBDEs from sanitary landfills into the underground environment across China

  14. Revisiting the role of trap-assisted-tunneling process on current-voltage characteristics in tunnel field-effect transistors

    Science.gov (United States)

    Omura, Yasuhisa; Mori, Yoshiaki; Sato, Shingo; Mallik, Abhijit

    2018-04-01

    This paper discusses the role of trap-assisted-tunneling process in controlling the ON- and OFF-state current levels and its impacts on the current-voltage characteristics of a tunnel field-effect transistor. Significant impacts of high-density traps in the source region are observed that are discussed in detail. With regard to recent studies on isoelectronic traps, it has been discovered that deep level density must be minimized to suppress the OFF-state leakage current, as is well known, whereas shallow levels can be utilized to control the ON-state current level. A possible mechanism is discussed based on simulation results.

  15. Direct observation of the leakage current in epitaxial diamond Schottky barrier devices by conductive-probe atomic force microscopy and Raman imaging

    International Nuclear Information System (INIS)

    Alvarez, J; Boutchich, M; Kleider, J P; Teraji, T; Koide, Y

    2014-01-01

    The origin of the high leakage current measured in several vertical-type diamond Schottky devices is conjointly investigated by conducting probe atomic force microscopy and confocal micro-Raman/photoluminescence imaging analysis. Local areas characterized by a strong decrease of the local resistance (5–6 orders of magnitude drop) with respect to their close surrounding have been identified in several different regions of the sample surface. The same local areas, also referenced as electrical hot-spots, reveal a slightly constrained diamond lattice and three dominant Raman bands in the low-wavenumber region (590, 914 and 1040 cm −1 ). These latter bands are usually assigned to the vibrational modes involving boron impurities and its possible complexes that can electrically act as traps for charge carriers. Local current–voltage measurements performed at the hot-spots point out a trap-filled-limited current as the main conduction mechanism favouring the leakage current in the Schottky devices. (paper)

  16. Current-potential characteristics of electrochemical systems

    Energy Technology Data Exchange (ETDEWEB)

    Battaglia, Vincent S. [Univ. of California, Berkeley, CA (United States)

    1993-07-01

    This dissertation contains investigations in three distinct areas. Chapters 1 and 2 provide an analysis of the effects of electromagnetic phenomena during the initial stages of cell discharge. Chapter 1 includes the solution to Maxwell`s equations for the penetration of the axial component of an electric field into an infinitely long cylindrical conductor. Chapter 2 contains the analysis of the conductor included in a radial circuit. Chapter 3 provides a complete description of the equations that describe the growth of an oxide film. A finite difference program was written to solve the equations. The system investigated is the iron/iron oxide in a basic, aqueous solution. Chapters 4 and 5 include the experimental attempts for replacing formaldehyde with an innocuous reducing agent for electroless deposition. In chapter 4, current-versus-voltage curves are provided for a sodium thiosulfate bath in the presence of a copper disk electrode. Also provided are the cathodic polarization curves of a copper/EDTA bath in the presence of a copper electrode. Chapter 5 contains the experimental results of work done with sodium hypophosphite as a reducing agent. Mixed-potential-versus-time curves for solutions containing various combinations of copper sulfate, nickel chloride, and hypophosphite in the presence of a palladium disk electrode provide an indication of the reducing power of the solutions.

  17. Impact of fluorine co-implantation on B deactivation and leakage currents in low and high energy Ge preamorphised p+n shallow junctions

    International Nuclear Information System (INIS)

    Girginoudi, D.; Tsiarapas, C.

    2008-01-01

    The impact of fluorine (F) co-implantation on boron (B) deactivation and B TED, as well as on the I-V characteristics of p + n shallow junctions, have been studied for low (10 keV) and high (70 keV) energy Ge preamorphised (PAI) n-type Si samples, that were annealed at 600 deg. C and 700 deg. C. Transmission electron microscopy revealed the existence of defects and dislocation loops (DLs) in the EOR region. It has been found that F stabilizes the EOR defect population via the increase of EOR defect density and the percentage of the stable DLs. This phenomenon is more pronounced when the preamorphisation is shallow (10 keV Ge energy). SIMS and sheet resistance measurements showed the formation of BICs, which implies B deactivation and increased B TED, especially in the shallow PAI samples and at the 700 deg. C annealing temperature. The role of F on B deactivation is multiplex: in the 70 keV PAI samples, and at 600 deg. C annealing temperature, F forms clusters with B causing further B deactivation. In the case of 700 deg. C annealing temperature, F probably forms fluorine-vacancy (F-V) clusters that trap silicon interstitials (Is), thus reducing the possibility of forming BICs and, therefore, resulting in B re-activation and suppression of B TED. Conversely, in the 10-keV PAI samples, and irrespective of the annealing temperature, F improves significantly the sheet resistance, and we suggest that this is a result of the contribution of two physical mechanisms: in the EOR region, F is trapped into DLs, which release less Is than other types of defects. In the amorphous part of Si, there are probably F-V clusters that trap the Is released from the EOR region. Although F in most cases improves B deactivation, it increases the reverse leakage currents, probably due to the stabilization of the EOR defects. As regards the carrier-transport mechanisms, it has been found that the dominant mechanism is the generation-recombination process under forward bias as well as under

  18. Current-Voltage Characteristics of Quasi-One-Dimensional Superconductors

    DEFF Research Database (Denmark)

    Vodolazov, D.Y.; Peeters, F.M.; Piraux, L.

    2003-01-01

    The current-voltage (I-V) characteristics of quasi-one-dimensional superconductors were discussed. The I-V characteristics exhibited an unusual S behavior. The dynamics of superconducting condensate and the existence of two different critical currents resulted in such an unusual behavior....

  19. Ion induced intermixing and consequent effects on the leakage currents in HfO{sub 2}/SiO{sub 2}/Si systems

    Energy Technology Data Exchange (ETDEWEB)

    Manikanthababu, N.; Saikiran, V.; Pathak, A.P.; Rao, S.V.S.N. [University of Hyderabad, School of Physics, Hyderabad (India); Chan, T.K.; Vajandar, S.; Osipowicz, T. [National University of Singapore, Department of Physics, Centre for Ion Beam Applications (CIBA), Singapore (Singapore)

    2017-05-15

    Atomic layer deposited (ALD) samples with layer stacks of HfO{sub 2} (3 nm)/SiO{sub 2} (0.7 nm)/Si were subjected to 120 MeV Au ion irradiation at different fluences to study intermixing effects across the HfO{sub 2}/SiO{sub 2} interface. High-resolution Rutherford backscattering spectrometry (HRBS) and X-ray reflectivity (XRR) measurements confirm an increase in the interlayer thickness as a result of SHI induced intermixing effects. Current-voltage (I-V) measurements reveal an order of magnitude difference in the leakage current density between the pristine and irradiated samples. This can be explained by considering the increased physical thickness of interlayer (HfSiO). Furthermore, the samples were subjected to rapid thermal annealing (RTA) process to analyze annealing kinetics. (orig.)

  20. On Probability Leakage

    OpenAIRE

    Briggs, William M.

    2012-01-01

    The probability leakage of model M with respect to evidence E is defined. Probability leakage is a kind of model error. It occurs when M implies that events $y$, which are impossible given E, have positive probability. Leakage does not imply model falsification. Models with probability leakage cannot be calibrated empirically. Regression models, which are ubiquitous in statistical practice, often evince probability leakage.

  1. Current-voltage characteristics of carbon nanotubes with substitutional nitrogen

    DEFF Research Database (Denmark)

    Kaun, C.C.; Larade, B.; Mehrez, H.

    2002-01-01

    unit cell generates a metallic transport behavior. Nonlinear I-V characteristics set in at high bias and a negative differential resistance region is observed for the doped tubes. These behaviors can be well understood from the alignment/mis-alignment of the current carrying bands in the nanotube leads......We report ab initio analysis of current-voltage (I-V) characteristics of carbon nanotubes with nitrogen substitution doping. For zigzag semiconducting tubes, doping with a single N impurity increases current flow and, for small radii tubes, narrows the current gap. Doping a N impurity per nanotube...

  2. General characteristics of current in front of Port Said, Egypt

    Directory of Open Access Journals (Sweden)

    Mohamed S. Elsharkawy

    2017-06-01

    Full Text Available This paper is a preliminary investigation of the general characteristics of the current in front of the coastal Mediterranean city: Port Said, Egypt. The study of the current regime in front of Port Said helps environmental engineers to tackle problems as marine port sedimentation and shoreline changes. Surface and bottom current recordings at a single offshore station of depth 104 m located at 31° 34.90′ N, 32° 30.01′ E have been subject to statistical analysis. The measurements showed unexpectedly that bottom currents were relatively stronger than surface currents during May-99.

  3. Current voltage characteristics of composite superconductors with high contact resistance

    International Nuclear Information System (INIS)

    Akhmetov, A.A.; Baev, V.P.

    1984-01-01

    An experimental study has been made of current-voltage characteristics of composite superconductors with contact resistance between superconducting filaments and normal metal with high electrical conductivity. It is shown that stable resistive states exist in such conductors over a wide range of currents. The presence of resistive states is interpreted in terms of the resistive domain concept. The minimum and maximum currents of resistive states are found to be dependent on the electrical resistance of normal metal and magnetic field. (author)

  4. Solution-Processed Small-Molecule Bulk Heterojunctions: Leakage Currents and the Dewetting Issue for Inverted Solar Cells.

    Science.gov (United States)

    Destouesse, Elodie; Chambon, Sylvain; Courtel, Stéphanie; Hirsch, Lionel; Wantz, Guillaume

    2015-11-11

    In organic photovoltaic (PV) devices based on solution-processed small molecules, we report here that the physicochemical properties of the substrate are critical for achieving high-performances organic solar cells. Three different substrates were tested: ITO coated with PSS, ZnO sol-gel, and ZnO nanoparticles. PV performances are found to be low when the ZnO nanoparticles layer is used. This performance loss is attributed to the formation of many dewetting points in the active layer, because of a relatively high roughness of the ZnO nanoparticles layer, compared to the other layers. We successfully circumvented this phenomenon by adding a small quantity of polystyrene (PS) in the active layer. The introduction of PS improves the quality of film forming and reduces the dark currents of solar cells. Using this method, high-efficiency devices were achieved, even in the case of substrates with higher roughness.

  5. AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors with reduced leakage current and enhanced breakdown voltage using aluminum ion implantation

    Energy Technology Data Exchange (ETDEWEB)

    Sun, Shichuang [Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074 (China); Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123 (China); Fu, Kai, E-mail: kfu2009@sinano.ac.cn, E-mail: cqchen@mail.hust.edu.cn; Yu, Guohao; Zhang, Zhili; Song, Liang; Deng, Xuguang; Li, Shuiming; Sun, Qian; Cai, Yong; Zhang, Baoshun [Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123 (China); Qi, Zhiqiang; Dai, Jiangnan; Chen, Changqing, E-mail: kfu2009@sinano.ac.cn, E-mail: cqchen@mail.hust.edu.cn [Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074 (China)

    2016-01-04

    This letter has studied the performance of AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors on silicon substrate with GaN buffer treated by aluminum ion implantation for insulating followed by a channel regrown by metal–organic chemical vapor deposition. For samples with Al ion implantation of multiple energies of 140 keV (dose: 1.4 × 10{sup 14} cm{sup −2}) and 90 keV (dose: 1 × 10{sup 14} cm{sup −2}), the OFF-state leakage current is decreased by more than 3 orders and the breakdown voltage is enhanced by nearly 6 times compared to the samples without Al ion implantation. Besides, little degradation of electrical properties of the 2D electron gas channel is observed where the maximum drain current I{sub DSmax} at a gate voltage of 3 V was 701 mA/mm and the maximum transconductance g{sub mmax} was 83 mS/mm.

  6. Electrical current leakage and open-core threading dislocations in AlGaN-based deep ultraviolet light-emitting diodes

    International Nuclear Information System (INIS)

    Moseley, Michael; Allerman, Andrew; Crawford, Mary; Wierer, Jonathan J.; Smith, Michael; Biedermann, Laura

    2014-01-01

    Electrical current transport through leakage paths in AlGaN-based deep ultraviolet (DUV) light-emitting diodes (LEDs) and their effect on LED performance are investigated. Open-core threading dislocations, or nanopipes, are found to conduct current through nominally insulating Al 0.7 Ga 0.3 N layers and limit the performance of DUV-LEDs. A defect-sensitive phosphoric acid etch reveals these open-core threading dislocations in the form of large, micron-scale hexagonal etch pits visible with optical microscopy, while closed-core screw-, edge-, and mixed-type threading dislocations are represented by smaller and more numerous nanometer-scale pits visible by atomic-force microscopy. The electrical and optical performances of DUV-LEDs fabricated on similar Si-doped Al 0.7 Ga 0.3 N templates are found to have a strong correlation to the density of these nanopipes, despite their small fraction (<0.1% in this study) of the total density of threading dislocations

  7. Leakage Current Induced by Energetic Disorder in Organic Bulk Heterojunction Solar Cells: Comprehending the Ultrahigh Loss of Open-Circuit Voltage at Low Temperatures

    Science.gov (United States)

    Yang, Wenchao; Luo, Yongsong; Guo, Pengfei; Sun, Haibin; Yao, Yao

    2017-04-01

    The open-circuit voltage (Voc ) of organic solar cells generally approaches its maximum obtainable values as the temperature decreases. However, recent experiments have revealed that the Voc may suffer from an ultrahigh loss at low temperatures. In order to verify this explanation and investigate the impacts of energetic disorder on the temperature-dependent behaviors of the Voc in general, we calculate the Voc-T plots with the drift-diffusion method under various device working parameters. With the disorder being incorporated into the device model by considering the disorder-suppressed (temperature-dependent) charge-carrier mobilities, it is found that the ultrahigh Voc losses cannot be reproduced under the Onsager-Braun-type charge generation rate. With the charge generation rate being constant or weakly dependent on temperature, for nonselective contacts, the Voc reduces drastically at low temperatures, while for selective contacts, the Voc increases monotonically with decreasing temperature. With higher carrier mobilities or smaller device thicknesses, the ultrahigh loss occurs at lower temperatures. The mechanism is that, since the disorder-suppressed charge mobilities give rise to both low charge-extraction efficiency and small bimolecular recombination rate, plenty of charge carriers can be extracted from the wrong electrode and can form a large leakage current, which counteracts the majority-carrier current and reduces the Voc at low temperatures. Our results thus highlight the essential role of charge-carrier kinetics, except for the charge-filling effect, on dominating the disorder-induced Voc losses.

  8. Low voltage stress-induced leakage current and traps in ultrathin oxide (1.2 2.5 nm) after constant voltage stresses

    Science.gov (United States)

    Petit, C.; Zander, D.

    2007-10-01

    It has been shown that the low voltage gate current in ultrathin oxide metal-oxide-semiconductor devices is very sensitive to electrical stresses. Therefore, it can be used as a reliability monitor when the oxide thickness becomes too small for traditional electrical measurements to be used. In this work, we present a study on n-MOSCAP devices at negative gate bias in the direct tunneling (DT) regime. If the low voltage stress-induced leakage current (LVSILC) depends strongly on the low sense voltages, it also depends strongly on the stress voltage magnitude. We show that two LVSILC peaks appear as a function of the sense voltage in the LVSILC region and that their magnitude, one compared to the other, depends strongly on the stress voltage magnitude. One is larger than the other at low stress voltage and smaller at high stress voltage. From our experimental results, different conduction mechanisms are analyzed. To explain LVSILC variations, we propose a model of the conduction through the ultrathin gate oxide based on two distinctly different trap-assisted tunneling mechanisms: inelastic of gate electron (INE) and trap-assisted electron (ETAT).

  9. Calculation of Leakage Inductance for High Frequency Transformers

    DEFF Research Database (Denmark)

    Ouyang, Ziwei; Jun, Zhang; Hurley, William Gerard

    2015-01-01

    Frequency dependent leakage inductance is often observed. High frequency eddy current effects cause a reduction in leakage inductance. The proximity effect between adjacent layers is responsible for the reduction of leakage inductance. This paper gives a detailed analysis of high frequency leakag...

  10. A Study on the Leakage Characteristic Evaluation of High Temperature and Pressure Pipeline at Nuclear Power Plants Using the Acoustic Emission Technique

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Young Hoon; Kim, Jin Hyun; Song, Bong Min; Lee, Joon Hyun; Cho, Youn Ho [Pusan National University, Busan (Korea, Republic of)

    2009-10-15

    An acoustic leak monitoring system(ALMS) using acoustic emission(AE) technique was applied for leakage detection of nuclear power plant's pipeline which is operated in high temperature and pressure condition. Since this system only monitors the existence of leak using the root mean square(RMS) value of raw signal from AE sensor, the difficulty occurs when the characteristics of leak size and shape need to be evaluated. In this study, dual monitoring system using AE sensor and accelerometer was introduced in order to solve this problem. In addition, artificial neural network(ANN) with Levenberg Marquardt(LM) training algorithm was also applied due to rapid training rate and gave the reliable classification performance. The input parameters of this ANN were extracted from varying signal received from experimental conditions such as the fluid pressure inside pipe, the shape and size of the leak area. Additional experiments were also carried out and with different objective which is to study the generation and characteristic of lamb and surface wave according to the pipe thickness

  11. A Study on the Leakage Characteristic Evaluation of High Temperature and Pressure Pipeline at Nuclear Power Plants Using the Acoustic Emission Technique

    International Nuclear Information System (INIS)

    Kim, Young Hoon; Kim, Jin Hyun; Song, Bong Min; Lee, Joon Hyun; Cho, Youn Ho

    2009-01-01

    An acoustic leak monitoring system(ALMS) using acoustic emission(AE) technique was applied for leakage detection of nuclear power plant's pipeline which is operated in high temperature and pressure condition. Since this system only monitors the existence of leak using the root mean square(RMS) value of raw signal from AE sensor, the difficulty occurs when the characteristics of leak size and shape need to be evaluated. In this study, dual monitoring system using AE sensor and accelerometer was introduced in order to solve this problem. In addition, artificial neural network(ANN) with Levenberg Marquardt(LM) training algorithm was also applied due to rapid training rate and gave the reliable classification performance. The input parameters of this ANN were extracted from varying signal received from experimental conditions such as the fluid pressure inside pipe, the shape and size of the leak area. Additional experiments were also carried out and with different objective which is to study the generation and characteristic of lamb and surface wave according to the pipe thickness

  12. Leakage current conduction mechanisms and electrical properties of atomic-layer-deposited HfO2/Ga2O3 MOS capacitors

    Science.gov (United States)

    Zhang, Hongpeng; Jia, Renxu; Lei, Yuan; Tang, Xiaoyan; Zhang, Yimen; Zhang, Yuming

    2018-02-01

    In this paper, current conduction mechanisms in HfO2/β-Ga2O3 metal-oxide-semiconductor (MOS) capacitors under positive and negative biases are investigated using the current-voltage (I-V) measurements conducted at temperatures from 298 K to 378 K. The Schottky emission is dominant under positively biased electric fields of 0.37-2.19 MV cm-1, and the extracted Schottky barrier height ranged from 0.88 eV to 0.91 eV at various temperatures. The Poole-Frenkel emission dominates under negatively biased fields of 1.92-4.83 MV cm-1, and the trap energy levels are from 0.71 eV to 0.77 eV at various temperatures. The conduction band offset (ΔE c) of HfO2/β-Ga2O3 is extracted to be 1.31  ±  0.05 eV via x-ray photoelectron spectroscopy, while a large negative sheet charge density of 1.04  ×  1013 cm-2 is induced at the oxide layer and/or HfO2/β-Ga2O3 interface. A low C-V hysteresis of 0.76 V, low interface state density (D it) close to 1  ×  1012 eV-1 cm-2, and low leakage current density of 2.38  ×  10-5 A cm-2 at a gate voltage of 7 V has been obtained, suggesting the great electrical properties of HfO2/β-Ga2O3 MOSCAP. According to the above analysis, ALD-HfO2 is an attractive candidate for high voltage β-Ga2O3 power devices.

  13. Hyperpolarization-activated inward leakage currents caused by deletion or mutation of carboxy-terminal tyrosines of the Na+/K+-ATPase {alpha} subunit.

    Science.gov (United States)

    Meier, Susan; Tavraz, Neslihan N; Dürr, Katharina L; Friedrich, Thomas

    2010-02-01

    The Na(+)/K(+)-ATPase mediates electrogenic transport by exporting three Na(+) ions in exchange for two K(+) ions across the cell membrane per adenosine triphosphate molecule. The location of two Rb(+) ions in the crystal structures of the Na(+)/K(+)-ATPase has defined two "common" cation binding sites, I and II, which accommodate Na(+) or K(+) ions during transport. The configuration of site III is still unknown, but the crystal structure has suggested a critical role of the carboxy-terminal KETYY motif for the formation of this "unique" Na(+) binding site. Our two-electrode voltage clamp experiments on Xenopus oocytes show that deletion of two tyrosines at the carboxy terminus of the human Na(+)/K(+)-ATPase alpha(2) subunit decreases the affinity for extracellular and intracellular Na(+), in agreement with previous biochemical studies. Apparently, the DeltaYY deletion changes Na(+) affinity at site III but leaves the common sites unaffected, whereas the more extensive DeltaKETYY deletion affects the unique site and the common sites as well. In the absence of extracellular K(+), the DeltaYY construct mediated ouabain-sensitive, hyperpolarization-activated inward currents, which were Na(+) dependent and increased with acidification. Furthermore, the voltage dependence of rate constants from transient currents under Na(+)/Na(+) exchange conditions was reversed, and the amounts of charge transported upon voltage pulses from a certain holding potential to hyperpolarizing potentials and back were unequal. These findings are incompatible with a reversible and exclusively extracellular Na(+) release/binding mechanism. In analogy to the mechanism proposed for the H(+) leak currents of the wild-type Na(+)/K(+)-ATPase, we suggest that the DeltaYY deletion lowers the energy barrier for the intracellular Na(+) occlusion reaction, thus destabilizing the Na(+)-occluded state and enabling inward leak currents. The leakage currents are prevented by aromatic amino acids at the

  14. Current-Voltage Characteristic of Nanosecond - Duration Relativistic Electron Beam

    Science.gov (United States)

    Andreev, Andrey

    2005-10-01

    The pulsed electron-beam accelerator SINUS-6 was used to measure current-voltage characteristic of nanosecond-duration thin annular relativistic electron beam accelerated in vacuum along axis of a smooth uniform metal tube immersed into strong axial magnetic field. Results of these measurements as well as results of computer simulations performed using 3D MAGIC code show that the electron-beam current dependence on the accelerating voltage at the front of the nanosecond-duration pulse is different from the analogical dependence at the flat part of the pulse. In the steady-state (flat) part of the pulse), the measured electron-beam current is close to Fedosov current [1], which is governed by the conservation law of an electron moment flow for any constant voltage. In the non steady-state part (front) of the pulse, the electron-beam current is higher that the appropriate, for a giving voltage, steady-state (Fedosov) current. [1] A. I. Fedosov, E. A. Litvinov, S. Ya. Belomytsev, and S. P. Bugaev, ``Characteristics of electron beam formed in diodes with magnetic insulation,'' Soviet Physics Journal (A translation of Izvestiya VUZ. Fizika), vol. 20, no. 10, October 1977 (April 20, 1978), pp.1367-1368.

  15. Branching in current-voltage characteristics of intrinsic Josephson junctions

    International Nuclear Information System (INIS)

    Shukrinov, Yu M; Mahfouzi, F

    2007-01-01

    We study branching in the current-voltage characteristics of the intrinsic Josephson junctions of high-temperature superconductors in the framework of the capacitively coupled Josephson junction model with diffusion current. A system of dynamical equations for the gauge-invariant phase differences between superconducting layers for a stack of ten intrinsic junctions has been numerically solved. We have obtained a total branch structure in the current-voltage characteristics. We demonstrate the existence of a 'breakpoint region' on the current-voltage characteristics and explain it as a result of resonance between Josephson and plasma oscillations. The effect of the boundary conditions is investigated. The existence of two outermost branches and correspondingly two breakpoint regions for the periodic boundary conditions is shown. One branch, which is observed only at periodic boundary conditions, corresponds to the propagating of the plasma mode. The second one corresponds to the situation when the charge oscillations on the superconducting layers are absent, excluding the breakpoint. A time dependence of the charge oscillations at breakpoints is presented

  16. Langmuir probe characteristic in a current - carrying magnetized plasma

    International Nuclear Information System (INIS)

    Stanojevic, M.; Cercek, M.; Gyergyek, T.

    1995-01-01

    Experimental investigation of the Langmuir probe characteristic is a magnetized plasma with an electron current along the magnetic field direction shows that the standard procedure for determination of the electron temperature and plasma density, which is applicable in a current - free magnetized plasma, gives erroneous results for these plasma parameters. However, more precise values of the plasma parameters can be calculated from the ion saturation currents and electron temperatures obtained with that procedure for two opposite orientations of the one - sided planar probe collecting surface with respect to the direction of the electron drift. With the existing theoretical models only the order of magnitude of the electron drift velocity can be accurately determined from the measured electron saturation currents for the two probe orientations. (author)

  17. Correlation between stress-induced leakage current and dielectric degradation in ultra-porous SiOCH low-k materials

    Energy Technology Data Exchange (ETDEWEB)

    Wu, C., E-mail: Chen.Wu@imec.be; De Wolf, I. [imec, Kapeldreef 75, 3001 Leuven (Belgium); Department of Materials Engineering, KU Leuven, 3000 Leuven (Belgium); Li, Y.; Leśniewska, A.; Varela Pedreira, O.; Marneffe, J.-F. de; Ciofi, I.; Verdonck, P.; Baklanov, M. R.; Bömmels, J.; Tőkei, Zs.; Croes, K. [imec, Kapeldreef 75, 3001 Leuven (Belgium)

    2015-10-28

    Stress-Induced Leakage Current (SILC) behavior during the dielectric degradation of ultra-porous SiOCH low-k materials was investigated. Under high voltage stress, SILC increases to a critical value before final hard breakdown. This SILC increase rate is mainly driven by the injected charges and is negligibly influenced by temperature and voltage. SILC is found to be transient and shows a t{sup −1} relaxation behavior, where t is the storage time at low voltages. This t{sup −1} transient behavior, described by the tunneling front model, is caused by both electron charging of neutral defects in the dielectric close to the cathode interface and discharging of donor defects close to the anode interface. These defects have a uniform density distribution within the probed depth range, which is confirmed by the observed flat band voltage shift results collected during the low voltage storage. By applying an additional discharging step after the low voltage storage, the trap energies and spatial distributions are derived. In a highly degraded low-k dielectric, the majority of defects have a trap depth between 3.4 eV and 3.6 eV and a density level of 1 × 10{sup 18 }eV{sup −1 }cm{sup −3}. The relation between the defect density N and the total amount of the injected charges Q is measured to be sub-linear, N ∼ Q{sup 0.45±0.07}. The physical nature of these stress-induced defects is suggested to be caused by the degradation of the Si-O based skeleton in the low-k dielectric.

  18. Study on GaN buffer leakage current in AlGaN/GaN high electron mobility transistor structures grown by ammonia-molecular beam epitaxy on 100-mm Si(111)

    International Nuclear Information System (INIS)

    Ravikiran, L.; Radhakrishnan, K.; Ng, G. I.; Munawar Basha, S.; Dharmarasu, N.; Agrawal, M.; Manoj kumar, C. M.; Arulkumaran, S.

    2015-01-01

    The effect of carbon doping on the structural and electrical properties of GaN buffer layer of AlGaN/GaN high electron mobility transistor (HEMT) structures has been studied. In the undoped HEMT structures, oxygen was identified as the dominant impurity using secondary ion mass spectroscopy and photoluminescence (PL) measurements. In addition, a notable parallel conduction channel was identified in the GaN buffer at the interface. The AlGaN/GaN HEMT structures with carbon doped GaN buffer using a CBr 4 beam equivalent pressure of 1.86 × 10 −7 mTorr showed a reduction in the buffer leakage current by two orders of magnitude. Carbon doped GaN buffers also exhibited a slight increase in the crystalline tilt with some pits on the growth surface. PL and Raman measurements indicated only a partial compensation of donor states with carbon acceptors. However, AlGaN/GaN HEMT structures with carbon doped GaN buffer with 200 nm thick undoped GaN near the channel exhibited good 2DEG characteristics

  19. Study on GaN buffer leakage current in AlGaN/GaN high electron mobility transistor structures grown by ammonia-molecular beam epitaxy on 100-mm Si(111)

    Energy Technology Data Exchange (ETDEWEB)

    Ravikiran, L.; Radhakrishnan, K., E-mail: ERADHA@e.ntu.edu.sg; Ng, G. I. [NOVITAS-Nanoelectronics, Centre of Excellence, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798 (Singapore); Munawar Basha, S.; Dharmarasu, N.; Agrawal, M.; Manoj kumar, C. M.; Arulkumaran, S. [Temasek Laboratories@NTU, Nanyang Technological University, Singapore 637553 (Singapore)

    2015-06-28

    The effect of carbon doping on the structural and electrical properties of GaN buffer layer of AlGaN/GaN high electron mobility transistor (HEMT) structures has been studied. In the undoped HEMT structures, oxygen was identified as the dominant impurity using secondary ion mass spectroscopy and photoluminescence (PL) measurements. In addition, a notable parallel conduction channel was identified in the GaN buffer at the interface. The AlGaN/GaN HEMT structures with carbon doped GaN buffer using a CBr{sub 4} beam equivalent pressure of 1.86 × 10{sup −7} mTorr showed a reduction in the buffer leakage current by two orders of magnitude. Carbon doped GaN buffers also exhibited a slight increase in the crystalline tilt with some pits on the growth surface. PL and Raman measurements indicated only a partial compensation of donor states with carbon acceptors. However, AlGaN/GaN HEMT structures with carbon doped GaN buffer with 200 nm thick undoped GaN near the channel exhibited good 2DEG characteristics.

  20. Fault Current Characteristics of the DFIG under Asymmetrical Fault Conditions

    Directory of Open Access Journals (Sweden)

    Fan Xiao

    2015-09-01

    Full Text Available During non-severe fault conditions, crowbar protection is not activated and the rotor windings of a doubly-fed induction generator (DFIG are excited by the AC/DC/AC converter. Meanwhile, under asymmetrical fault conditions, the electrical variables oscillate at twice the grid frequency in synchronous dq frame. In the engineering practice, notch filters are usually used to extract the positive and negative sequence components. In these cases, the dynamic response of a rotor-side converter (RSC and the notch filters have a large influence on the fault current characteristics of the DFIG. In this paper, the influence of the notch filters on the proportional integral (PI parameters is discussed and the simplified calculation models of the rotor current are established. Then, the dynamic performance of the stator flux linkage under asymmetrical fault conditions is also analyzed. Based on this, the fault characteristics of the stator current under asymmetrical fault conditions are studied and the corresponding analytical expressions of the stator fault current are obtained. Finally, digital simulation results validate the analytical results. The research results are helpful to meet the requirements of a practical short-circuit calculation and the construction of a relaying protection system for the power grid with penetration of DFIGs.

  1. Starting characteristics of direct current motors powered by solar cells

    Science.gov (United States)

    Singer, S.; Appelbaum, J.

    1989-01-01

    Direct current motors are used in photovoltaic systems. Important characteristics of electric motors are the starting to rated current and torque ratios. These ratios are dictated by the size of the solar cell array and are different for the various dc motor types. Discussed here is the calculation of the starting to rated current ratio and starting to rated torque ratio of the permanent magnet, and series and shunt excited motors when powered by solar cells for two cases: with and without a maximum-power-point-tracker (MPPT) included in the system. Comparing these two cases, one gets a torque magnification of about 3 for the permanent magnet motor and about 7 for other motor types. The calculation of the torques may assist the PV system designer to determine whether or not to include an MPPT in the system.

  2. Characteristics of inertial currents observed in offshore wave records

    Science.gov (United States)

    Gemmrich, J.; Garrett, C.

    2012-04-01

    It is well known that ambient currents can change the amplitude, direction and frequency of ocean surface waves. Regions with persistent strong currents, such as the Agulhas current off the east coast of South Africa, are known as areas of extreme waves, and wave height modulations of up to 50% observed in the shallow North Sea have been linked to tidal currents. In the open ocean, inertial currents, while intermittent, are typically the most energetic currents with speeds up to 0.5 m/s, and can interact with the surface wave field to create wave modulation, though this has not previously been reported. We use long records of significant wave heights from buoy observations in the northeast Pacific and show evidence of significant modulation at frequencies that are slightly higher than the local inertial frequency. Quite apart from the relevance to surface waves, this result can provide a consistent and independent measurement, over a wide range of latitudes, of the frequency blue-shift, the strength and intermittency of ocean surface inertial currents. Near-inertial waves constitute the most energetic portion of the internal wave band and play a significant role in deep ocean mixing. So far, observational data on near-surface inertial currents has tended to come from short records that do not permit the reliable determination of the frequency blue-shift, though this is an important factor affecting the energy flux from the surface into deeper waters. Long records from routine wave height observations are widely available and could help to shed new light globally on the blue-shift and on the characteristics of inertial currents.

  3. Study on current limiting characteristics of SFCL with two trigger current levels

    International Nuclear Information System (INIS)

    Lim, S.H.

    2010-01-01

    In this paper, the superconducting fault current limiter (SFCL) with two trigger current levels was suggested and its effectiveness through the analysis on the current limiting characteristics was described. The proposed SFCL, which consists of the triggering and the limiting components, can limit the fault current by generating the limiting impedance through two steps according to the amplitude of the initial fault current. In case that the fault happens, the lower initial fault current causes the only superconducting element of the triggering component to be quenched. On the other hand, the higher initial fault current makes both the superconducting elements comprising the triggering and the limiting components of the SFCL to be quenched, which contributes to the higher impedance of the SFCL. Therefore, the effective fault current limiting operation of the SFCL can be performed by generating the SFCL's impedance in proportion to the amplitude of the initial fault current. To confirm the current limiting operation of the proposed SFCL, the short-circuit tests of the SFCL according to the fault angle were carried out and its effective fault current limiting operations could be discussed.

  4. Current-voltage characteristics of dendrimer light-emitting diodes

    International Nuclear Information System (INIS)

    Stevenson, S G; Samuel, I D W; Staton, S V; Knights, K A; Burn, P L; Williams, J H T; Walker, Alison B

    2010-01-01

    We have investigated current-voltage (I-V) characteristics of unipolar and bipolar organic diodes that use phosphorescent dendrimers as the emissive organic layer. Through simulation of the measured I-V characteristics we were able to determine the device parameters for each device structure studied, leading to a better understanding of injection and transport behaviour in these devices. It was found that the common practice of assuming injection barriers are equal to the difference between bare electrode work functions and molecular orbital levels is unsuitable for the devices considered here, particularly for gold contacts. The studies confirm that different aromatic units in the dendrons can give significant differences in the charge transporting properties of the dendrimers.

  5. Current-voltage characteristics of dendrimer light-emitting diodes

    Science.gov (United States)

    Stevenson, S. G.; Samuel, I. D. W.; Staton, S. V.; Knights, K. A.; Burn, P. L.; Williams, J. H. T.; Walker, Alison B.

    2010-09-01

    We have investigated current-voltage (I-V) characteristics of unipolar and bipolar organic diodes that use phosphorescent dendrimers as the emissive organic layer. Through simulation of the measured I-V characteristics we were able to determine the device parameters for each device structure studied, leading to a better understanding of injection and transport behaviour in these devices. It was found that the common practice of assuming injection barriers are equal to the difference between bare electrode work functions and molecular orbital levels is unsuitable for the devices considered here, particularly for gold contacts. The studies confirm that different aromatic units in the dendrons can give significant differences in the charge transporting properties of the dendrimers.

  6. Current-voltage characteristics of dendrimer light-emitting diodes

    Energy Technology Data Exchange (ETDEWEB)

    Stevenson, S G; Samuel, I D W [Organic Semiconductor Centre, SUPA, School of Physics and Astronomy, University of St Andrews, North Haugh, St Andrews, Fife, KY16 9SS (United Kingdom); Staton, S V; Knights, K A; Burn, P L [Department of Chemistry, Chemistry Research Laboratory, 12 Mansfield Road, Oxford, OX1 3TA (United Kingdom); Williams, J H T; Walker, Alison B, E-mail: a.b.walker@bath.ac.u [Department of Physics, University of Bath, Bath, BA2 7AY (United Kingdom)

    2010-09-29

    We have investigated current-voltage (I-V) characteristics of unipolar and bipolar organic diodes that use phosphorescent dendrimers as the emissive organic layer. Through simulation of the measured I-V characteristics we were able to determine the device parameters for each device structure studied, leading to a better understanding of injection and transport behaviour in these devices. It was found that the common practice of assuming injection barriers are equal to the difference between bare electrode work functions and molecular orbital levels is unsuitable for the devices considered here, particularly for gold contacts. The studies confirm that different aromatic units in the dendrons can give significant differences in the charge transporting properties of the dendrimers.

  7. Vessel eddy current characteristics in SST-1 tokamak

    Energy Technology Data Exchange (ETDEWEB)

    Jana, Subrata; Pradhan, Subrata, E-mail: pradhan@ipr.res.in; Dhongde, Jasraj; Masand, Harish

    2016-11-15

    Highlights: • Eddy current distribution in the SST-1 vacuum vessel. • Circuit model analysis of eddy current. • A comparison of the field lines with and without the plasma column in identical conditions. • The influence of eddy current in magnetic NULL dynamics. - Abstract: Eddy current distribution in the vacuum vessel of the Steady state superconducting (SST-1) tokamak has been determined from the experimental data obtained using an array of internal voltage loops (flux loop) installed inside the vacuum vessel. A simple circuit model has been employed. The model takes into account the geometric and constructional features of SST-1 vacuum vessel. SST-1 vacuum vessel is a modified ‘D’ shaped vessel having major axis of 1.285 m and minor axis of 0.81 m and has been manufactured from non-magnetic stainless steel. The Plasma facing components installed inside the vacuum vessel are graphite blocks mounted on Copper Chromium Zirconium (CuCrZr) heat sink plates on inconel supports. During discharge of the central solenoid, eddy currents get generated in the vacuum vessel and passive supports on it. These eddy currents influence the early magnetic NULL dynamics and plasma break-down and start-up characteristics. The computed results obtained from the model have been benchmarked against experimental data obtained in large number of SST-1 plasma shots. The results are in good agreement. Once bench marked, the calculated eddy current based on flux loop signal and circuit equation model has been extended to the reconstruction of the overall B- field contours of SST-1 tokamak in the vessel region. A comparison of the field lines with and without the plasma column in identical conditions of the central solenoid and equilibrium field profiles has also been done with an aim to quantify the diagnostics responses in vacuum shots.

  8. Analysis on current limiting characteristics of a transformer type SFCL with two triggering current levels

    International Nuclear Information System (INIS)

    Lim, Sung-Hun; Ko, Seckcheol; Han, Tae-Hee

    2013-01-01

    Highlights: ► We suggested the transformer type SFCL with two triggering current levels. ► The short-circuit tests for the suggested SFCL was executed. ► The fault angle as the fault conditions to verify its operation was selected. ► The usefulness of the suggested SFCL was confirmed through the short-circuit test. -- Abstract: In this paper, the transformer type superconducting fault current limiter (SFCL) with two triggering current levels was suggested and its current limiting characteristics were analyzed. The structure of the suggested transformer type SFCL with two triggering current levels largely consists of two parts. One is the transformer with two magnetically coupled coils, which correspond to the primary winding and the secondary one connected with one high-T C superconducting (HTSC) element. The other is third coil, or, another secondary winding with one HTSC element, which is wound on the same iron core together with two coils. This suggested transformer type SFCL can limit the fault current by generating its limiting impedance with two different amplitudes, which are dependent on the initial amplitude of the fault current in case of the fault occurrence. To confirm the usefulness of the proposed SFCL, the current limiting tests of the SFCL according to the fault angle, one of the effective fault conditions to affect the amplitude of the initial fault current, were carried out and its effective limiting operations were discussed

  9. Current-voltage characteristics of porous-silicon structures

    International Nuclear Information System (INIS)

    Diligenti, A.; Nannini, A.; Pennelli, G.; Pieri, F.; Fuso, F.; Allegrini, M.

    1996-01-01

    I-V DC characteristics have been measured on metal/porous-silicon structures. In particular, the measurements on metal/free-standing porous-silicon film/metal devices confirmed the result, already obtained, that the metal/porous-silicon interface plays a crucial role in the transport of any device. Four-contacts measurements on free-standing layers showed that the current linearly depends on the voltage and that the conduction process is thermally activated, the activation energy depending on the porous silicon film production parameters. Finally, annealing experiments performed in order to improve the conduction of rectifying contacts, are described

  10. Ion clusters, REB, and current sheath characteristics in focused discharges

    International Nuclear Information System (INIS)

    Bortolotti, A.; Brzosko, J.; DeChiara, P.; Kilic, H.; Mezzetti, F.; Nardi, V.; Powell, C.; Zeng, D.

    1990-01-01

    Small fluctuations in the current sheath characteristics (peak current density, FWHM of leading sheath, control parameters of sheath internal structure) are linked to wide fluctuations of ion and ion cluster emission from the pinch. Magnetic probe data are used for correlating variations of current sheath parameters with particle emission intensity, Z/M composition, particle energy spectrum. The emission of ion and ion clusters at 90 degrees from the axis of a plasma focus discharge is monitored simultaneously with the 0 degrees emission. The particle energy spectrum is analyzed with a Thomson (parabola) spectrometer (time resolution ∼ 1 nanosec). The cross-sectional structure of the REB at 180 degrees along the discharge axis is monitored via the deposition of collective-field accelerated ions on a target in the REB direction. Etched tracks of ion and ion clusters are in all cases recorded on CR-39 plates. Sharp peaks of the D + -ion spectrum at 90 degrees are found for E > 200 keV/unit charge in all focused discharges. These peaks are due to ion crossing of the azimuthal magnetic field of the pinch region, in a predominant ion cluster structure

  11. Current-voltage-temperature characteristics of DNA origami

    Energy Technology Data Exchange (ETDEWEB)

    Bellido, Edson P; Bobadilla, Alfredo D; Rangel, Norma L; Seminario, Jorge M [Department of Chemical Engineering, Texas A and M University, College Station, TX 77843 (United States); Zhong Hong; Norton, Michael L [Department of Chemistry, Marshall University, Huntington, WV 25755 (United States); Sinitskii, Alexander [Department of Chemistry, Rice University, Houston, TX 77005 (United States)

    2009-04-29

    The temperature dependences of the current-voltage characteristics of a sample of triangular DNA origami deposited in a 100 nm gap between platinum electrodes are measured using a probe station. Below 240 K, the sample shows high impedance, similar to that of the substrate. Near room temperature the current shows exponential behavior with respect to the inverse of temperature. Sweep times of 1 s do not yield a steady state; however sweep times of 450 s for the bias voltage secure a steady state. The thermionic emission and hopping conduction models yield similar barriers of {approx}0.7 eV at low voltages. For high voltages, the hopping conduction mechanism yields a barrier of 0.9 eV and the thermionic emission yields 1.1 eV. The experimental data set suggests that the dominant conduction mechanism is hopping in the range 280-320 K. The results are consistent with theoretical and experimental estimates of the barrier for related molecules.

  12. Current-voltage-temperature characteristics of DNA origami

    International Nuclear Information System (INIS)

    Bellido, Edson P; Bobadilla, Alfredo D; Rangel, Norma L; Seminario, Jorge M; Zhong Hong; Norton, Michael L; Sinitskii, Alexander

    2009-01-01

    The temperature dependences of the current-voltage characteristics of a sample of triangular DNA origami deposited in a 100 nm gap between platinum electrodes are measured using a probe station. Below 240 K, the sample shows high impedance, similar to that of the substrate. Near room temperature the current shows exponential behavior with respect to the inverse of temperature. Sweep times of 1 s do not yield a steady state; however sweep times of 450 s for the bias voltage secure a steady state. The thermionic emission and hopping conduction models yield similar barriers of ∼0.7 eV at low voltages. For high voltages, the hopping conduction mechanism yields a barrier of 0.9 eV and the thermionic emission yields 1.1 eV. The experimental data set suggests that the dominant conduction mechanism is hopping in the range 280-320 K. The results are consistent with theoretical and experimental estimates of the barrier for related molecules.

  13. Land-use Leakage

    Energy Technology Data Exchange (ETDEWEB)

    Calvin, Katherine V.; Edmonds, James A.; Clarke, Leon E.; Bond-Lamberty, Benjamin; Kim, Son H.; Wise, Marshall A.; Thomson, Allison M.; Kyle, G. Page

    2009-12-01

    Leakage occurs whenever actions to mitigate greenhouse gas emissions in one part of the world unleash countervailing forces elsewhere in the world so that reductions in global emissions are less than emissions mitigation in the mitigating region. While many researchers have examined the concept of industrial leakage, land-use policies can also result in leakage. We show that land-use leakage is potentially as large as or larger than industrial leakage. We identify two potential land-use leakage drivers, land-use policies and bioenergy. We distinguish between these two pathways and run numerical experiments for each. We also show that the land-use policy environment exerts a powerful influence on leakage and that under some policy designs leakage can be negative. International “offsets” are a potential mechanism to communicate emissions mitigation beyond the borders of emissions mitigating regions, but in a stabilization regime designed to limit radiative forcing to 3.7 2/m2, this also implies greater emissions mitigation commitments on the part of mitigating regions.

  14. Data leakage quantification

    NARCIS (Netherlands)

    Vavilis, S.; Petkovic, M.; Zannone, N.; Atluri, V.; Pernul, G.

    2014-01-01

    The detection and handling of data leakages is becoming a critical issue for organizations. To this end, data leakage solutions are usually employed by organizations to monitor network traffic and the use of portable storage devices. These solutions often produce a large number of alerts, whose

  15. Modeling valve leakage

    International Nuclear Information System (INIS)

    Bell, S.R.; Rohrscheib, R.

    1994-01-01

    The American Society of Mechanical Engineers (ASME) Code requires individual valve leakage testing for Category A valves. Although the U.S. Nuclear Regulatory Commission (USNRC) has recognized that it is more appropriate to test containment isolation valves in groups, as allowed by 10 CFR 50, Appendix J, a utility seeking relief from these Code requirements must provide technical justification for the relief and establish a conservative alternate acceptance criteria. In order to provide technical justification for group testing of containment isolation valves, Illinois Power developed a calculation (model) for determining the size of a leakage pathway in a valve disc or seat for a given leakage rate. The model was verified experimentally by machining leakage pathways of known size and then measuring the leakage and comparing this value to the calculated value. For the range of values typical of leakage rate testing, the correlation between the experimental values and calculated values was quote good. Based upon these results, Illinois Power established a conservative acceptance criteria for all valves in the inservice testing (IST) program and was granted relief by the USNRC from the individual leakage testing requirements of the ASME Code. This paper presents the results of Illinois Power's work in the area of valve leakage rate testing

  16. ATR confinement leakage determination

    International Nuclear Information System (INIS)

    Kuan, P.; Buescher, B.J.

    1998-01-01

    The air leakage rate from the Advanced Test Reactor (ATR) confinement is an important parameter in estimating hypothesized accidental releases of radiation to the environment. The leakage rate must be determined periodically to assure that the confinement has not degraded with time and such determination is one of the technical safety requirements of ATR operation. This paper reviews the methods of confinement leakage determination and presents an analysis of leakage determination under windy conditions, which can complicate the interpretation of the determined leakage rates. The paper also presents results of analyses of building air exchange under windy conditions. High wind can enhance air exchange and this could increase the release rates of radioisotopes following an accident

  17. Radioactivity leakage monitoring system

    International Nuclear Information System (INIS)

    Nakajima, Takuichiro; Noguchi, Noboru.

    1982-01-01

    Purpose: To obtain a device for detecting the leakage ratio of a primary coolant by utilizing the variation in the radioactivity concentration in a reactor container when the coolant is leaked. Constitution: A measurement signal is produced from a radioactivity measuring instrument, and is continuously input to a malfunction discriminator. The discriminator inputs a measurement signal to a concentration variation discriminator when the malfunction is recognized and simultaneously inputs a measurement starting time from the inputting time to a concentration measuring instrument. On the other hand, reactor water radioactivity concentration data obtained by sampling the primary coolant is input to a concentration variation computing device. A comparator obtains the ratio of the measurement signal from the measuring instrument and the computed data signal from the computing device at the same time and hence the leakage rate, indicates the average leakage rate by averaging the leakage rate signals and also indicates the total leakage amount. (Yoshihara, H.)

  18. Model for Electromagnetic Information Leakage

    OpenAIRE

    Mao Jian; Li Yongmei; Zhang Jiemin; Liu Jinming

    2013-01-01

    Electromagnetic leakage will happen in working information equipments; it could lead to information leakage. In order to discover the nature of information in electromagnetic leakage, this paper combined electromagnetic theory with information theory as an innovative research method. It outlines a systematic model of electromagnetic information leakage, which theoretically describes the process of information leakage, intercept and reproduction based on electromagnetic radiation, and ana...

  19. Characteristics of alternating current hopping conductivity in DNA sequences

    International Nuclear Information System (INIS)

    Song-Shan, Ma; Hui, Xu; Huan-You, Wang; Rui, Guo

    2009-01-01

    This paper presents a model to describe alternating current (AC) conductivity of DNA sequences, in which DNA is considered as a one-dimensional (1D) disordered system, and electrons transport via hopping between localized states. It finds that AC conductivity in DNA sequences increases as the frequency of the external electric field rises, and it takes the form of ø ac (ω) ∼ ω 2 ln 2 (1/ω). Also AC conductivity of DNA sequences increases with the increase of temperature, this phenomenon presents characteristics of weak temperature-dependence. Meanwhile, the AC conductivity in an off-diagonally correlated case is much larger than that in the uncorrelated case of the Anderson limit in low temperatures, which indicates that the off-diagonal correlations in DNA sequences have a great effect on the AC conductivity, while at high temperature the off-diagonal correlations no longer play a vital role in electric transport. In addition, the proportion of nucleotide pairs p also plays an important role in AC electron transport of DNA sequences. For p < 0.5, the conductivity of DNA sequence decreases with the increase of p, while for p ≥ 0.5, the conductivity increases with the increase of p. (cross-disciplinary physics and related areas of science and technology)

  20. Characteristics of alternating current hopping conductivity in DNA sequences

    Institute of Scientific and Technical Information of China (English)

    Ma Song-Shan; Xu Hui; Wang Huan-You; Guo Rui

    2009-01-01

    This paper presents a model to describe alternating current (AC) conductivity of DNA sequences,in which DNA is considered as a one-dimensional (1D) disordered system,and electrons transport via hopping between localized states.It finds that AC conductivity in DNA sequences increases as the frequency of the external electric field rises,and it takes the form of σac(ω)~ω2 ln2(1/ω).Also AC conductivity of DNA sequences increases with the increase of temperature,this phenomenon presents characteristics of weak temperature-dependence.Meanwhile,the AC conductivity in an off diagonally correlated case is much larger than that in the uncorrelated case of the Anderson limit in low temperatures,which indicates that the off-diagonal correlations in DNA sequences have a great effect on the AC conductivity,while at high temperature the off-diagonal correlations no longer play a vital role in electric transport. In addition,the proportion of nucleotide pairs p also plays an important role in AC electron transport of DNA sequences.For p<0.5,the conductivity of DNA sequence decreases with the increase of p,while for p > 0.5,the conductivity increases with the increase of p.

  1. Animal-cell culture media: History, characteristics, and current issues.

    Science.gov (United States)

    Yao, Tatsuma; Asayama, Yuta

    2017-04-01

    Cell culture technology has spread prolifically within a century, a variety of culture media has been designed. This review goes through the history, characteristics and current issues of animal-cell culture media. A literature search was performed on PubMed and Google Scholar between 1880 and May 2016 using appropriate keywords. At the dawn of cell culture technology, the major components of media were naturally derived products such as serum. The field then gradually shifted to the use of chemical-based synthetic media because naturally derived ingredients have their disadvantages such as large batch-to-batch variation. Today, industrially important cells can be cultured in synthetic media. Nevertheless, the combinations and concentrations of the components in these media remain to be optimized. In addition, serum-containing media are still in general use in the field of basic research. In the fields of assisted reproductive technologies and regenerative medicine, some of the medium components are naturally derived in nearly all instances. Further improvements of culture media are desirable, which will certainly contribute to a reduction in the experimental variation, enhance productivity among biopharmaceuticals, improve treatment outcomes of assisted reproductive technologies, and facilitate implementation and popularization of regenerative medicine.

  2. Cathode fall model and current-voltage characteristics of field emission driven direct current microplasmas

    Energy Technology Data Exchange (ETDEWEB)

    Venkattraman, Ayyaswamy [Department of Applied Mechanics, Indian Institute of Technology Madras, Chennai 600036 (India)

    2013-11-15

    The post-breakdown characteristics of field emission driven microplasma are studied theoretically and numerically. A cathode fall model assuming a linearly varying electric field is used to obtain equations governing the operation of steady state field emission driven microplasmas. The results obtained from the model by solving these equations are compared with particle-in-cell with Monte Carlo collisions simulation results for parameters including the plasma potential, cathode fall thickness, ion number density in the cathode fall, and current density vs voltage curves. The model shows good overall agreement with the simulations but results in slightly overpredicted values for the plasma potential and the cathode fall thickness attributed to the assumed electric field profile. The current density vs voltage curves obtained show an arc region characterized by negative slope as well as an abnormal glow discharge characterized by a positive slope in gaps as small as 10 μm operating at atmospheric pressure. The model also retrieves the traditional macroscale current vs voltage theory in the absence of field emission.

  3. Cathode fall model and current-voltage characteristics of field emission driven direct current microplasmas

    International Nuclear Information System (INIS)

    Venkattraman, Ayyaswamy

    2013-01-01

    The post-breakdown characteristics of field emission driven microplasma are studied theoretically and numerically. A cathode fall model assuming a linearly varying electric field is used to obtain equations governing the operation of steady state field emission driven microplasmas. The results obtained from the model by solving these equations are compared with particle-in-cell with Monte Carlo collisions simulation results for parameters including the plasma potential, cathode fall thickness, ion number density in the cathode fall, and current density vs voltage curves. The model shows good overall agreement with the simulations but results in slightly overpredicted values for the plasma potential and the cathode fall thickness attributed to the assumed electric field profile. The current density vs voltage curves obtained show an arc region characterized by negative slope as well as an abnormal glow discharge characterized by a positive slope in gaps as small as 10 μm operating at atmospheric pressure. The model also retrieves the traditional macroscale current vs voltage theory in the absence of field emission

  4. Analysis of the Noise Characteristics of CMOS Current Conveyors

    DEFF Research Database (Denmark)

    Bruun, Erik

    1997-01-01

    The definition of the current conveyor is reviewed and a multiple-output second generation current conveyor (CCII) is shown to combine the different generations of current conveyors presently existing. Next, noise sources are introduced, and a general noise model for the current conveyor is descr......The definition of the current conveyor is reviewed and a multiple-output second generation current conveyor (CCII) is shown to combine the different generations of current conveyors presently existing. Next, noise sources are introduced, and a general noise model for the current conveyor...

  5. Analysis of Planar E+I and ER+I Transformers for Low-Voltage High-Current DC/DC Converters with Focus on Winding Losses and Leakage Inductance

    DEFF Research Database (Denmark)

    Pittini, Riccardo; Zhang, Zhe; Ouyang, Ziwei

    2012-01-01

    on winding resistance and leakage inductances which represent the main concerns related to low-voltage high-current applications. The PCB winding design has a one to one turn ratio with no interleaving between primary and secondary windings. The main goal was to determine if ER planar core could provide...... a significant advantage in terms of winding losses compared to planar E cores. Results from finite element analysis highlight that low frequency winding resistance is lower for the ER core since it is dominated by the lower mean turn length however, as the AC-resistance becomes dominating the winding eddy...... more realistic results when computing the winding AC-resistance....

  6. Low field leakage current on ultra-thin gate oxides after ion or electron beam irradiations; Courant de fuite aux champs faibles d'oxydes ultra-minces apres irradiations avec des faisceaux d'ions et d'electrons

    Energy Technology Data Exchange (ETDEWEB)

    Ceschia, M.; Paccagnella, A.; Sandrin, S. [Universita di Padova, Dipt. di Elettronica e Informatica, Padova (Italy); Paccagnella, A. [Istituto Nazionale per la Fisica della Materia, INFM, Unita di Padova (Italy); Ghidini, G. [ST-Microelectronics, Agrate Brianza (Italy); Wyss, J. [Universita di Padova, Dipt. di Fisica, Padova (Italy)

    1999-07-01

    In contemporary CMOS 0.25-{mu}m technologies, the MOS gate oxide (thickness {approx_equal} 5 nm) shows a low-field leakage current after radiation stresses, i.e. the radiation induced leakage current (RILC). RILC is generally attributed to a trap assisted tunneling (TAT) of electrons through neutral oxide traps generated by radiation stress. RILC has been investigated on ultra-thin oxides irradiated with 158 MeV {sup 28}Si ions or 8 MeV electrons. 3 main results are worth being quoted: 1) ion or electron beam irradiation can produce RILC with similar characteristics. Even the dose dependence of RILC is similar in the 2 cases, despite the large LET difference (about a factor of 10{sup +4}), 2) RILC is not a constant as a function of time, it tends to decrease when an oxide field (few MV/cm) is applied for (tens of) thousands seconds. On the other hand, RILC stays constant in devices kept at low bias, and 3) if a pulsed gate voltage is applied during irradiation, RILC is reduced with respect to the zero-field case. (A.C.)

  7. Universal leakage elimination

    International Nuclear Information System (INIS)

    Byrd, Mark S.; Lidar, Daniel A.; Wu, L.-A.; Zanardi, Paolo

    2005-01-01

    'Leakage' errors are particularly serious errors which couple states within a code subspace to states outside of that subspace, thus destroying the error protection benefit afforded by an encoded state. We generalize an earlier method for producing leakage elimination decoupling operations and examine the effects of the leakage eliminating operations on decoherence-free or noiseless subsystems which encode one logical, or protected qubit into three or four qubits. We find that by eliminating a large class of leakage errors, under some circumstances, we can create the conditions for a decoherence-free evolution. In other cases we identify a combined decoherence-free and quantum error correcting code which could eliminate errors in solid-state qubits with anisotropic exchange interaction Hamiltonians and enable universal quantum computing with only these interactions

  8. Radiation effects on the current-voltage and capacitance-voltage characteristics of advanced p-n junction diodes surrounded by shallow trench isolation

    International Nuclear Information System (INIS)

    Poyai, A.; Simoen, E.; Claeys, C.; Hayama, K.; Kobayashi, K.; Ohyama, H.

    2002-01-01

    This paper investigates the impact of 20 MeV proton irradiation on the current-voltage (I-V) and capacitance-voltage (C-V) characteristics of different geometry n + -p-well junction diodes surrounded by shallow trench isolation and processed in a 0.18 μm CMOS technology. From I-V characteristics, a higher current damage coefficient was found for the bulk than for the peripheral component. The radiation-induced boron de-activation resulted in a lowering of the p-well doping, which has been derived from high-frequency C-V measurements. This was confirmed by deep level transient spectroscopy (DLTS) analysis, revealing the presence of interstitial boron related radiation defects. As will be demonstrated for the bulk leakage-current damage coefficient, the electric field enhanced generation rate of charge carriers and the radiation-induced boron de-activation should be accounted for properly

  9. Apparatus for detecting leakage of liquid sodium

    Science.gov (United States)

    Himeno, Yoshiaki

    1978-01-01

    An apparatus for detecting the leakage of liquid sodium includes a cable-like sensor adapted to be secured to a wall of piping or other equipment having sodium on the opposite side of the wall, and the sensor includes a core wire electrically connected to the wall through a leak current detector and a power source. An accidental leakage of the liquid sodium causes the corrosion of a metallic layer and an insulative layer of the sensor by products resulted from a reaction of sodium with water or oxygen in the atmospheric air so as to decrease the resistance between the core wire and the wall. Thus, the leakage is detected as an increase in the leaking electrical current. The apparatus is especially adapted for use in detecting the leakage of liquid sodium from sodium-conveying pipes or equipment in a fast breeder reactor.

  10. Coolant leakage detecting device

    International Nuclear Information System (INIS)

    Yamauchi, Kiyoshi; Kawai, Katsunori; Ishihara, Yoshinao.

    1995-01-01

    The device of the present invention judges an amount of leakage of primary coolants of a PWR power plant at high speed. Namely, a mass of coolants contained in a pressurizer, a volume controlling tank and loop regions is obtained based on a preset relational formula and signals of each of process amount, summed up to determine the total mass of coolants for every period of time. The amount of leakage for every period of time is calculated by a formula of Karman's filter based on the total mass of the primary coolants for every predetermined period of time, and displays it on CRT. The Karman's filter is formed on every formula for several kinds of states formed based on the preset amount of the leakage, to calculate forecasting values for every mass of coolants. An adaptable probability for every preset leakage amount is determined based on the difference between the forecast value and the observed value and the scattering thereof. The adaptable probability is compared with a predetermined threshold value, which is displayed on the CRT. This device enables earlier detection of leakage and identification of minute leakage amount as compared with the prior device. (I.S.)

  11. Characteristic time for halo current growth and rotation

    Energy Technology Data Exchange (ETDEWEB)

    Boozer, Allen H., E-mail: ahb17@columbia.edu [Department of Applied Physics and Applied Mathematics, Columbia University, New York, New York 10027 (United States)

    2015-10-15

    A halo current flows for part of its path through the plasma edge and for part through the chamber walls and during tokamak disruptions can be as large as tenths of the plasma current. The primary interest in halo currents is the large force that they can exert on machine components particularly if the toriodal rotation of the halo current resonates with a natural oscillation frequency of the tokamak device. Halo currents arise when required to slow down the growth of a kink that is too unstable to be stabilized by the chamber walls. The width of the current channel in the halo plasma is comparable to the amplitude of the kink, and the halo current grows linearly, not exponentially, in time. The current density in the halo is comparable to that of the main plasma body. The rocket force due to plasma flowing out of the halo and recombining on the chamber walls can cause the non-axisymmetric magnetic structure produced by the kink to rotate toroidally at a speed comparable to the halo speed of sound. Gerhardt's observations of the halo current in NSTX shot 141 687 [Nucl. Fusion 53, 023005 (2013)] illustrate many features of the theory of halo currents and are discussed as a summary of the theory.

  12. The Impact of Statistical Leakage Models on Design Yield Estimation

    Directory of Open Access Journals (Sweden)

    Rouwaida Kanj

    2011-01-01

    Full Text Available Device mismatch and process variation models play a key role in determining the functionality and yield of sub-100 nm design. Average characteristics are often of interest, such as the average leakage current or the average read delay. However, detecting rare functional fails is critical for memory design and designers often seek techniques that enable accurately modeling such events. Extremely leaky devices can inflict functionality fails. The plurality of leaky devices on a bitline increase the dimensionality of the yield estimation problem. Simplified models are possible by adopting approximations to the underlying sum of lognormals. The implications of such approximations on tail probabilities may in turn bias the yield estimate. We review different closed form approximations and compare against the CDF matching method, which is shown to be most effective method for accurate statistical leakage modeling.

  13. Characteristics of halo current in JT-60U

    International Nuclear Information System (INIS)

    Neyatani, Y.; Nakamura, Y.; Yoshino, R.; Hatae, T.

    1999-01-01

    Halo currents and their toroidal peaking factor (TPF) have been measured in JT-60U by Rogowski coil type halo current sensors. The electron temperature in the halo region was around 10 eV at 1 ms before the timing of the maximum halo current. The maximum TPF*I h /I p0 was 0.52 in the operational range of I p = 0.7 ∼ 1.8 MA, B T = 2.2 ∼ 3.5 T, including ITER design parameters of κ > 1.6 and q 95 = 3, which was lower than that of the maximum value of ITER data base (0.75). The magnitude of halo currents tended to decrease with the increase in stored energy just before the energy quench and with the line integrated electron density at the time of the maximum halo current. A termination technique in which the current channel remains stationary was useful to avoid halo current generation. Intense neon gas puffing during the VDE was effective for reducing the halo currents. (author)

  14. Characteristics of halo current in JT-60U

    International Nuclear Information System (INIS)

    Neyatani, Y.; Nakamura, Y.; Yoshino, R.; Hatae, T.

    2001-01-01

    Halo currents and their toroidal peaking factor (TPF) have been measured in JT-60U by Rogowski coil type halo current sensors. The electron temperature in the halo region was around 10 eV at 1 ms before the timing of the maximum halo current. The maximum TPF *I h /I p0 was 0.52 in the operational range of I p =0.7∼1.8MA, B T =2.2∼3.5T, including ITER design parameters of κ>1.6 and q 95 =3, which was lower than that of the maximum value of ITER data base (0.75). The magnitude of halo currents tended to decrease with the increase in stored energy just before the energy quench and with the line integrated electron density at the time of the maximum halo current. A termination technique in which the current channel remains stationary was useful to avoid halo current generation. Intense neon gas puffing during the VDE was effective for reducing the halo currents. (author)

  15. Water Leakage and Nitrate Leaching Characteristics in the Winter Wheat–Summer Maize Rotation System in the North China Plain under Different Irrigation and Fertilization Management Practices

    Directory of Open Access Journals (Sweden)

    Shufeng Chen

    2017-02-01

    Full Text Available Field experiments were carried out in Huantai County from 2006 to 2008 to evaluate the effects of different nitrogen (N fertilization and irrigation management practices on water leakage and nitrate leaching in the dominant wheat–maize rotation system in the North China Plain (NCP. Two N fertilization (NF1, the traditional one; NF2, fertilization based on soil testing and two irrigation (IR1, the traditional one; IR2, irrigation based on real-time soil water content monitoring management practices were designed in the experiments. Water and nitrate amounts leaving the soil layer at a depth of 2.0 m below the soil surface were calculated and compared. Results showed that the IR2 effectively reduced water leakage and nitrate leaching amounts in the two-year period, especially in the winter wheat season. Less than 10 percent irrigation water could be saved in a dry winter wheat season, but about 60 percent could be saved in a wet winter wheat season. Besides, 58.8 percent nitrate under single NF2IR1 and 85.2 percent under NF2IR2 could be prevented from leaching. The IR2 should be considered as the best management practice to save groundwater resources and prevent nitrate from leaching. The amounts of N input play a great role in affecting nitrate concentrations in the soil solutions in the winter wheat–summer maize rotation system. The NF2 significantly reduced N inputs and should be encouraged in ordinary agricultural production. Thus, nitrate leaching and groundwater contamination could be alleviated, but timely N supplement might be needed under high precipitation condition.

  16. An investigation on weld quality characteristics of pulsed current ...

    African Journals Online (AJOL)

    user

    Austenitic stainless steels are probably the most commonly used material of all the ... reported that Zr(Cr, Fe)2 intermetallic compound and Zr2Fe–Zr2Ni eutectic ... were used to analyze the microstructure and fracture characteristics of the.

  17. Characteristics of output voltage and current of integrated nanogenerators

    KAUST Repository

    Yang, Rusen; Qin, Yong; Li, Cheng; Dai, Liming; Wang, Zhong Lin

    2009-01-01

    three criteria: Schottky behavior test, switching-polarity tests, and linear superposition of current and voltage tests. The 11 tests can effectively rule out the system artifacts, whose sign does not change with the switching measurement polarity

  18. Coolant leakage detection device

    International Nuclear Information System (INIS)

    Ito, Takao.

    1983-01-01

    Purpose: To surely detect the coolant leakage at a time when the leakage amount is still low in the intra-reactor inlet pipeway of FBR type reactor. Constitution: Outside of the intra-reactor inlet piping for introducing coolants at low temperature into a reactor core, an outer closure pipe is furnished. The upper end of the outer closure pipe opens above the liquid level of the coolants in the reactor, and a thermocouple is inserted to the opening of the upper end. In such a structure, if the coolants in the in-reactor piping should leak to the outer closure pipe, coolants over-flows from the opening thereof, at which the thermocouple detects the temperature of the coolants at a low temperature, thereby enabling to detect the leakage of the coolants at a time when it is still low. (Kamimura, M.)

  19. Channel follower leakage restrictor

    International Nuclear Information System (INIS)

    Williamson, H.E.; Smith, B.A.

    1977-01-01

    An improved means is provided to control coolant leakage between the flow channel and the lower tie plate of a nuclear fuel assembly. The means includes an opening in the lower tie plate and a movable element adjacent thereto. The coolant pressure within the tie plate biases the movable means toward the inner surface of the surrounding flow channel to compensate for any movement of the flow channel away from the lower tie plate to thereby control the leakage of coolant flow from the fuel assemblies to the spaces among the fuel assemblies of the core. 9 figures

  20. Pulse current gas metal arc welding characteristics, control and applications

    CERN Document Server

    Ghosh, Prakriti Kumar

    2017-01-01

    This monograph is a first-of-its-kind compilation on high deposition pulse current GMAW process. The nine chapters of this monograph may serve as a comprehensive knowledge tool to use advanced welding engineering in prospective applications. The contents of this book will prove useful to the shop floor welding engineer in handling this otherwise critical welding process with confidence. It will also serve to inspire researchers to think critically on more versatile applications of the unique nature of pulse current in GMAW process to develop cutting edge welding technology.

  1. Characteristics of a high current ion source operated with lithium

    International Nuclear Information System (INIS)

    Bay, H.L.; Dullni, E.; Leismann, P.

    1986-05-01

    A low pressure arc ion source has been tested for operation with lithium. Currents up to 120 mA could be extracted through a multiple aperture extraction system at energies of 30 keV. The ion beam was neutralized up to 70% in a charge exchange cell filled with lithium vapour. The beam divergence ranged from 20 to 25 mrad full angle deduced from the spatial distribution of the collision induced Li I resonance line. Current densities from 2 to 3 mA/m 2 at a distance of 1.9 m from the source were measured either by laser induced fluorescence or with a Faraday cup. (orig.)

  2. Trends in Childspacing: June 1975. Current Population Reports: Population Characteristics.

    Science.gov (United States)

    Moore, Maurice J.; And Others

    This report, largely statistical tables, presents data from the June 1975 Current Population Survey, on the timing and spacing of childbearing and discusses how such data is related to annual measures of fertility. By categorizing women according to their year of birth (birth cohort) or period of first marriage (marriage cohort), in addition to…

  3. Assessing Agulhas leakage

    NARCIS (Netherlands)

    van Sebille, E.

    2009-01-01

    Agulhas leakage, the water that flows from the Indian Ocean to the Atlantic Ocean, plays an important role in the circulation of the Atlantic Ocean. The magnitude of this flux of warm and saline Indian Ocean water into the much colder and fresher Atlantic Ocean can be related to the strength of the

  4. Roxby Downs water leakage

    International Nuclear Information System (INIS)

    1996-01-01

    The Environment, Resource and development Committee has been asked by Parliament to examine 'a massive leakage of water at Roxby Downs' and to make recommendations 'as to further action'. It has also been specifically asked to comment on 'the desirability of the Department of Mines and Energy having prime responsibility for environmental matters in relation to mining operations'. This report begins with a description of the Olympic Dam operations near Roxby Downs and with a brief overview of the regulations controlling those operations. The site of the leakage the Olympic Dam tailings retention system is then described in greater detail. Part 3 describes how the system was originally designed, modified and approved. It ends with a series of findings about the adequacy of the original design (including the monitoring systems built into it) and of the approvals process. Recommendations are then made about how future approvals should be handled. Part 4 of the report outlines how the tailings retention system was built and operated and how the massive leakage from it was detected and reported. Findings about the adequacy of the management of the system and about the initial reactions to the leakage are then made, together with recommendations designed to improve future management of the system. 25 refs., 15 figs

  5. Current status and phenotypic characteristics of Bulgarian poultry genetic resources

    International Nuclear Information System (INIS)

    Teneva, A.; Gerzilov, V.; Lalev, M.; Lukanov, H.; Mincheva, N.; Oblakova, M.; Petrov, P.; Hristakieva, P.; Dimitrova, I.; Periasamy, K.

    2016-01-01

    Full text: Poultry biodiversity conservation is a great challenge for many countries. Within the last several years, the number of endangered local breeds has increased, leading to a considerable loss of genetic resources. A similar trend was observed among the poultry breeds, including chicken, local turkey and goose breeds/lines established in Bulgaria, part of which is definitely lost. Currently these breeds/lines are at risk and/or threatened with extinction. The information obtained by phenotypic characterization of these breeds is the first step for planning the management of poultry genetic resources through setting up improved selection schemes and conservation strategies. In this paper, we reviewed the current state of knowledge regarding the morphological and phenotypic diversity of local poultry breeds and some old productive poultry lines in Bulgaria. (author)

  6. Current Travertines Precipitation from CO2-rich Groundwaters as an alert of CO2 Leakages from a Natural CO2 Storage at Ganuelas-Mazarron Tertiary Basin (Murcia, Spain)

    International Nuclear Information System (INIS)

    Rodrigo-Naharro, J.; Delgado, A.; Herrero, M. J.; Granados, A.; Perez del Villar, L.

    2013-01-01

    Carbon capture and storage technologies represent the most suitable solutions related to the high anthropogenic CO 2 emissions to the atmosphere. As a consequence, monitoring of the possible CO 2 leakages from an artificial deep geological CO 2 storage is indispensable to guarantee its safety. Fast surficial travertine precipitation related to these CO 2 leakages can be used as an alert for these escapes. Since few studies exist focusing on the long-term behaviour of an artificial CO 2 DGS, natural CO 2 storage affected by natural or artificial escapes must be studied as natural analogues for predicting the long-term behaviour of an artificial CO 2 storage. In this context, a natural CO 2 reservoir affected by artificial CO 2 escapes has been studied in this work. This study has mainly focused on the current travertines precipitation associated with the upwelling CO 2 -rich waters from several hydrogeological wells drilled in the Ganuelas-Mazarron Tertiary basin (SE Spain), and consists of a comprehensive characterisation of parent-waters and their associated carbonates, including elemental and isotopic geochemistry, mineralogy and petrography. Geochemical characterisation of groundwaters has led to recognise 4 hydrofacies from 3 different aquifers. These groundwaters have very high salinity and electrical conductivity; are slightly acid; present high dissolved inorganic carbon (DIC) and free CO 2 ; are oversaturated in both aragonite and calcite; and dissolve, mobilize and transport low quantities of heavy and/or toxic elements. Isotopic values indicate that: i) the origin of parent-waters is related to rainfalls from clouds originated in the Mediterranean Sea or continental areas; ii) the origin of C is mainly inorganic; and iii) sulphate anions come mainly from the dissolution of the Messinian gypsum from the Tertiary Basin sediments. Current travertines precipitation seems to be controlled by a combination of several factors, such as: i) a fast decrease of the

  7. Current Travertines Precipitation from CO{sub 2}-rich Groundwaters as an alert of CO{sub 2} Leakages from a Natural CO{sub 2} Storage at Ganuelas-Mazarron Tertiary Basin (Murcia, Spain)

    Energy Technology Data Exchange (ETDEWEB)

    Rodrigo-Naharro, J.; Delgado, A.; Herrero, M. J.; Granados, A.; Perez del Villar, L.

    2013-02-01

    Carbon capture and storage technologies (CCS) represent the most suitable solutions related to the high anthropogenic CO{sub 2} emissions to the atmosphere. As a consequence, monitoring of the possible CO{sub 2} leakages from an artificial deep geological CO{sub 2} storage (DGS) is indispensable to guarantee its safety. Fast surficial travertine precipitation related to these CO{sub 2} leakages can be used as an alert for these escapes. Since few studies exist focusing on the long-term behaviour of an artificial CO{sub 2} DGS, natural CO{sub 2} storage affected by natural or artificial escapes must be studied as natural analogues for predicting the long-term behaviour of an artificial CO{sub 2} storage. In this context, a natural CO{sub 2} reservoir affected by artificial CO{sub 2} escapes has been studied in this work. This study has mainly focused on the current travertines precipitation associated with the upwelling CO{sub 2}-rich waters from several hydrogeological wells drilled in the Ganuelas-Mazarron Tertiary basin (SE Spain), and consists of a comprehensive characterisation of parent-waters and their associated carbonates, including elemental and isotopic geochemistry, mineralogy and petrography. Geochemical characterisation of groundwaters has led to recognise 4 hydrofacies from 3 different aquifers. These groundwaters have very high salinity and electrical conductivity; are slightly acid; present high dissolved inorganic carbon (DIC) and free CO{sub 2}; are oversaturated in both aragonite and calcite; and dissolve, mobilize and transport low quantities of heavy and/or toxic elements. Isotopic values indicate that: i) the origin of parent-waters is related to rainfalls from clouds originated in the Mediterranean Sea or continental areas; ii) the origin of C is mainly inorganic; and iii) sulphate anions come mainly from the dissolution of the Messinian gypsum from the Tertiary Basin sediments. Current travertines precipitation seems to be controlled by a

  8. Current scaling for the radiative characteristics of a micropinch discharge

    International Nuclear Information System (INIS)

    Dogov, A.N.

    2005-01-01

    The absolute vacuum UV and soft X-ray (hν > 100 eV) yield from a micropinch discharge of plasma is measured. The current scaling in the range of 30-250 kA is found for a number of the discharge parameters: the vacuum UV and soft X-ray yield, electron temperature, effective temperature of suprathermal electrons and energy of bremsstrahlung emission from thermal electrons. The experimental data are in a good agreement with the calculated data [ru

  9. Characteristics of output voltage and current of integrated nanogenerators

    KAUST Repository

    Yang, Rusen

    2009-01-01

    Owing to the anisotropic property and small output signals of the piezoelectric nanogenerators (NGs) and the influence of the measurement system and environment, identification of the true signal generated by the NG is critical. We have developed three criteria: Schottky behavior test, switching-polarity tests, and linear superposition of current and voltage tests. The 11 tests can effectively rule out the system artifacts, whose sign does not change with the switching measurement polarity, and random signals, which might change signs but cannot consistently add up or cancel out under designed connection configurations. This study establishes the standards for designing and scale up of integrated nanogenerators. © 2009 American Institute of Physics.

  10. Improved Turn-on Characteristics of Fast High Current Thyristors

    CERN Document Server

    Ducimetière, L; Vossenberg, Eugène B

    1999-01-01

    The beam dumping system of CERN's Large Hadron Collider (LHC) is equipped with fast solid state closing switches, designed for a hold-off voltage of 30 kV and a quasi half sine wave current of 20 kA, with 3 ms rise time, a maximum di/dt of 12 kA/ms and 2 ms fall time. The design repetition rate is 20 s. The switch is composed of ten Fast High Current Thyristors (FHCT’s), which are modified symmetric 4.5 kV GTO thyristors of WESTCODE. Recent studies aiming at improving the turn-on delay, switching speed and at decreasing the switch losses, have led to test an asymmetric not fully optimised GTO thyristor of WESTCODE and an optimised device of GEC PLESSEY Semiconductor (GPS), GB. The GPS FHCT, which gave the best results, is a non irradiated device of 64 mm diameter with a hold-off voltage of 4.5 kV like the symmetric FHCT. Tests results of the GPS FHCT show a reduction in turn-on delay of 40 % and in switching losses of almost 50 % with respect to the symmetric FHCT of WESTCODE. The GPS device can sustain an i...

  11. Flow characteristics of counter-current flow in debris bed

    International Nuclear Information System (INIS)

    Abe, Yutaka; Adachi, Hiromichi

    2004-01-01

    In the course of a severe accident, a damaged core would form a debris bed consisting of once-molten and fragmented fuel elements. It is necessary to evaluate the dryout heat flux for the judgment of the coolability of the debris bed during the severe accident. The dryout phenomena in the debris bed is dominated by the counter-current flow limitation (CCFL) in the debris bed. In this study, air-water counter-current flow behavior in the debris bed is experimentally investigated with glass particles simulating the debris beds. In this experiment, falling water flow rate and axial pressure distributions were experimentally measured. As the results, it is clarified that falling water flow rate becomes larger with the debris bed height and the pressure gradient in the upper region of the debris bed is different from that in the lower region of the debris bed. These results indicate that the dominant region for CCFL in the debris bed is identified near the top of the debris bed. Analytical results with annular flow model indicates that interfacial shear stress in the upper region of the debris bed is larger than that in the lower region of the debris bed. (author)

  12. Characteristics of airflow and particle deposition in COPD current smokers

    Science.gov (United States)

    Zou, Chunrui; Choi, Jiwoong; Haghighi, Babak; Choi, Sanghun; Hoffman, Eric A.; Lin, Ching-Long

    2017-11-01

    A recent imaging-based cluster analysis of computed tomography (CT) lung images in a chronic obstructive pulmonary disease (COPD) cohort identified four clusters, viz. disease sub-populations. Cluster 1 had relatively normal airway structures; Cluster 2 had wall thickening; Cluster 3 exhibited decreased wall thickness and luminal narrowing; Cluster 4 had a significant decrease of luminal diameter and a significant reduction of lung deformation, thus having relatively low pulmonary functions. To better understand the characteristics of airflow and particle deposition in these clusters, we performed computational fluid and particle dynamics analyses on representative cluster patients and healthy controls using CT-based airway models and subject-specific 3D-1D coupled boundary conditions. The results show that particle deposition in central airways of cluster 4 patients was noticeably increased especially with increasing particle size despite reduced vital capacity as compared to other clusters and healthy controls. This may be attributable in part to significant airway constriction in cluster 4. This study demonstrates the potential application of cluster-guided CFD analysis in disease populations. NIH Grants U01HL114494 and S10-RR022421, and FDA Grant U01FD005837.

  13. Colorectal Anastomotic Leakage: New perspectives

    NARCIS (Netherlands)

    F. Daams (Freek)

    2014-01-01

    markdownabstract__Abstract__ This thesis provides new perspectives on colorectal anastomotic leakages. In both experimental and clinical studies, aspects of prevention, early identification, treatment and consequences of anastomotic leakage are discussed.

  14. Influence of magnet eddy current on magnetization characteristics of variable flux memory machine

    Science.gov (United States)

    Yang, Hui; Lin, Heyun; Zhu, Z. Q.; Lyu, Shukang

    2018-05-01

    In this paper, the magnet eddy current characteristics of a newly developed variable flux memory machine (VFMM) is investigated. Firstly, the machine structure, non-linear hysteresis characteristics and eddy current modeling of low coercive force magnet are described, respectively. Besides, the PM eddy current behaviors when applying the demagnetizing current pulses are unveiled and investigated. The mismatch of the required demagnetization currents between the cases with or without considering the magnet eddy current is identified. In addition, the influences of the magnet eddy current on the demagnetization effect of VFMM are analyzed. Finally, a prototype is manufactured and tested to verify the theoretical analyses.

  15. Current employment characteristics and career intentions of Lithuanian dentists.

    Science.gov (United States)

    Janulyte, Vilija; Aleksejuniene, Jolanta; Puriene, Alina; Peciuliene, Vytaute; Benzian, Habib

    2014-12-20

    The present survey explored the current employment profile and future career intentions of Lithuanian general dentists and specialists. A census sampling method was employed with data collected by means of a structured questionnaire that inquired about demographics, different employment-related aspects (practice type and location, working hours, perceived lack of patients, etc.), and future career intentions (intent to emigrate, to change profession, or the timing of retirement). The final response rate was 67.6% corresponding to 2,008 respondents. The majority of all dentists work full or part-time in the private dental sector, more than one third of them owns a private practice or rents a dental chair. A minority of dentists works in the public dental sector. According to the survey, 26.6% of general dentists and 39.2% of dental specialists works overtime (> 40 hours per week; P 0.05). The majority (68.9% of general dentists and 65.9% of dental specialists) plans to work after the retirement age (P > 0.05). Emigration as an option for their professional career is being considered by 10.8% of general dentists and 8.3% of dental specialists (P > 0.05). Working either full or part-time in private practices (OR = 4.3) and younger age (≤ 35 years; OR = 2.2) are the two strongest predictors for a perceived insufficient number of patients. One third of dentists in Lithuania work long hours and lack patients. Many dentists practice in multiple locations and plan to retire after the official retirement age. Some dentists and dental specialists plan to emigrate. The perceived shortcomings within the dental care system and workforce planning of dentists need to be addressed.

  16. Characteristics of current roadside pollution of soils in Upper Silesia

    Science.gov (United States)

    Wawer, M.; Szuszkiewicz, M.; Magiera, T.

    2012-04-01

    The aim of the study was qualitative recognition of contemporary roadside pollutants deposited on topsoils in areas located in close vicinity to roads with high traffic volume (main roads, ring roads). So far, the determination of pollutant content in soil samples has shown only the amount of pollutants deposited on soils over long time period, without the possibility to assess the quality changes in type of deposition and to determine the present structure of roadside pollution. Moreover, in many cases, it is difficult to distinguish roadside pollution from other industrial sources. In order to avoid this issue and recognize currently emergent threats of road traffic origin, three monitoring plots filled with quartz sand had been installed in Zabrze, Gliwice and Opole (Poland) close to arteries with high traffic volume. For installation of monitoring plots 7 cm of topsoil had been removed and replaced by boxes filled with clean quartz sand with known chemical composition and neutral magnetic properties (diamagnetic). This sand was treated as neutral matrix for the accumulation of traffic pollution. Results of chemical analyses of heavy metal contents and magnetic susceptibility measurements of removed topsoils have shown that the highest content of Fe, Mn, Zn, Pb, Cu, Cr and Ni were observed in Zabrze. Amount of Zn and Pb exceeded threshold values. Magnetic susceptibility values were also the highest in Zabrze. In all investigated areas magnetic susceptibility values and heavy metal contents decreased with the distance from the road. Measurements of sand from monitoring plots which were executed after 3, 6 and 12 months of exposure have shown that values of magnetic susceptibility have increased during these time periods. It is visible especially in surface layer of sand. Initially magnetic susceptibility value of quartz sand which was used as matrix after first year of exposure increased from 0,25 - 10-8 m3kg-1 to 300 in Zabrze, 50 in Gliwice and 30- 10-8 m3kg-1

  17. Exploring dark current voltage characteristics of micromorph silicon tandem cells with computer simulations

    NARCIS (Netherlands)

    Sturiale, A.; Li, H. B. T.; Rath, J.K.; Schropp, R.E.I.; Rubinelli, F.A.

    2009-01-01

    The transport mechanisms controlling the forward dark current-voltage characteristic of the silicon micromorph tandem solar cell were investigated with numerical modeling techniques. The dark current-voltage characteristics of the micromorph tandem structure at forward voltages show three regions:

  18. Poloidal field leakage optimization in ETE

    Energy Technology Data Exchange (ETDEWEB)

    Shibata, Carlos Shinya; Montes, Antonio

    1996-12-01

    A very simple but efficient numerical algorithm is used to minimize the Ohmic coil field leakage into the plasma region of the tokamak ETE. After few interactions the code provides the positions and the current required for two pairs of compensation coils. Resulting optimum field intensity distribution is presented and commented. (author). 5 refs., 4 figs., 2 tabs.

  19. Poloidal field leakage optimization in ETE

    International Nuclear Information System (INIS)

    Shibata, Carlos Shinya; Montes, Antonio.

    1996-01-01

    A very simple but efficient numerical algorithm is used to minimize the Ohmic coil field leakage into the plasma region of the tokamak ETE. After few interactions the code provides the positions and the current required for two pairs of compensation coils. Resulting optimum field intensity distribution is presented and commented. (author). 5 refs., 4 figs., 2 tabs

  20. Investigation of Turbulent Tip Leakage Vortex in an Axial Water Jet Pump with Large Eddy Simulation

    Science.gov (United States)

    Hah, Chunill; Katz, Joseph

    2012-01-01

    Detailed steady and unsteady numerical studies were performed to investigate tip clearance flow in an axial water jet pump. The primary objective is to understand physics of unsteady tip clearance flow, unsteady tip leakage vortex, and cavitation inception in an axial water jet pump. Steady pressure field and resulting steady tip leakage vortex from a steady flow analysis do not seem to explain measured cavitation inception correctly. The measured flow field near the tip is unsteady and measured cavitation inception is highly transient. Flow visualization with cavitation bubbles shows that the leakage vortex is oscillating significantly and many intermittent vortex ropes are present between the suction side of the blade and the tip leakage core vortex. Although the flow field is highly transient, the overall flow structure is stable and a characteristic frequency seems to exist. To capture relevant flow physics as much as possible, a Reynolds-averaged Navier-Stokes (RANS) calculation and a Large Eddy Simulation (LES) were applied for the current investigation. The present study reveals that several vortices from the tip leakage vortex system cross the tip gap of the adjacent blade periodically. Sudden changes in local pressure field inside tip gap due to these vortices create vortex ropes. The instantaneous pressure filed inside the tip gap is drastically different from that of the steady flow simulation. Unsteady flow simulation which can calculate unsteady vortex motion is necessary to calculate cavitation inception accurately even at design flow condition in such a water jet pump.

  1. Reduction of leakage current in In{sub 0.53}Ga{sub 0.47}As channel metal-oxide-semiconductor field-effect-transistors using AlAs{sub 0.56}Sb{sub 0.44} confinement layers

    Energy Technology Data Exchange (ETDEWEB)

    Huang, Cheng-Ying, E-mail: cyhuang@ece.ucsb.edu; Lee, Sanghoon; Cohen-Elias, Doron; Law, Jeremy J. M.; Carter, Andrew D.; Rodwell, Mark J. W. [Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States); Chobpattana, Varistha; Stemmer, Susanne [Materials Department, University of California, Santa Barbara, California 93106 (United States); Gossard, Arthur C. [Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States); Materials Department, University of California, Santa Barbara, California 93106 (United States)

    2013-11-11

    We compare the DC characteristics of planar In{sub 0.53}Ga{sub 0.47}As channel MOSFETs using AlAs{sub 0.56}Sb{sub 0.44} barriers to similar MOSFETs using In{sub 0.52}Al{sub 0.48}As barriers. AlAs{sub 0.56}Sb{sub 0.44}, with ∼1.0 eV conduction-band offset to In{sub 0.53}Ga{sub 0.47}As, improves electron confinement within the channel. At gate lengths below 100 nm and V{sub DS} = 0.5 V, the MOSFETs with AlAs{sub 0.56}Sb{sub 0.44} barriers show steeper subthreshold swing (SS) and reduced drain-source leakage current. We attribute the greater leakage observed with the In{sub 0.52}Al{sub 0.48}As barrier to thermionic emission from the N + In{sub 0.53}Ga{sub 0.47}As source over the In{sub 0.53}Ga{sub 0.47}As/In{sub 0.52}Al{sub 0.48}As heterointerface. A 56 nm gate length device with the AlAs{sub 0.56}Sb{sub 0.44} barrier exhibits 1.96 mS/μm peak transconductance and SS = 134 mV/dec at V{sub DS} = 0.5 V.

  2. Leakage radiation interference microscopy.

    Science.gov (United States)

    Descrovi, Emiliano; Barakat, Elsie; Angelini, Angelo; Munzert, Peter; De Leo, Natascia; Boarino, Luca; Giorgis, Fabrizio; Herzig, Hans Peter

    2013-09-01

    We present a proof of principle for a new imaging technique combining leakage radiation microscopy with high-resolution interference microscopy. By using oil immersion optics it is demonstrated that amplitude and phase can be retrieved from optical fields, which are evanescent in air. This technique is illustratively applied for mapping a surface mode propagating onto a planar dielectric multilayer on a thin glass substrate. The surface mode propagation constant estimated after Fourier transformation of the measured complex field is well matched with an independent measurement based on back focal plane imaging.

  3. Leakage resilient password systems

    CERN Document Server

    Li, Yingjiu; Deng, Robert H

    2015-01-01

    This book investigates tradeoff between security and usability in designing leakage resilient password systems (LRP) and introduces two practical LRP systems named Cover Pad and ShadowKey. It demonstrates that existing LRP systems are subject to both brute force attacks and statistical attacks and that these attacks cannot be effectively mitigated without sacrificing the usability of LRP systems. Quantitative analysis proves that a secure LRP system in practical settings imposes a considerable amount of cognitive workload unless certain secure channels are involved. The book introduces a secur

  4. Field-aligned current density versus electric potential characteristics for magnetospheric flux tubes

    International Nuclear Information System (INIS)

    Lemaire, J.; Scherer, M.

    1983-01-01

    The field-aligned current density (Jsub(tot)) is a non-linear function of the applied potential difference (phi) between the ionosphere and the magnetosphere. This nonlinear function has been calculated for plasma boundary conditions typical in a dayside cusp magnetic flux tube. The J-characteristic of such a flux tube changes when the temperatures of the warm magnetospheric electrons and of the cold ionospheric electrons are modified; it changes also when the relative density of the warm plasma is modified; the presence of trapped secondary electrons changes also the J-characteristic. The partial currents contributed by the warm and cold electrons, and by warm and cold ions are illustrated. The dynamic characteristic of an electric circuit depends on the static characteristic of each component of the sytem: i.e. the resistive ionosphere, the return current region, and the region of particle precipitation whose field-aligned current/voltage characteristics have been studied in this article

  5. Power series fitting of current-voltage characteristics of Al doped ZnO thin film-Sb doped (Ba{sub 0.8}Sr{sub 0.2})TiO{sub 3} heterojunction diode

    Energy Technology Data Exchange (ETDEWEB)

    Sirikulrat, N., E-mail: scphi003@chiangmai.ac.th

    2012-02-29

    The current-voltage (I-V) relationship of aluminum doped zinc oxide thin film-antimony doped barium strontium titanate single heterojunction diodes was investigated. The linear I-V characteristics are similar to those of the PN junction diodes. The linear conduction at a low forward bias voltage as predicted by the space charge limited current theory and the trap free square law at a higher forward voltage are observed. The overall current density-voltage (J-V) characteristics of the diodes are found to be well described by the Power Series Equation J= N-Ary-Summation {sub m}C{sub m}V{sup m} where C{sub m} is the leakage constant at particular power m with the best fit for the power m found to be at the fourth and fifth orders for the forward and reverse bias respectively. - Highlights: Black-Right-Pointing-Pointer The n-n isotype heterojunction diodes of ceramic oxide semiconductors were prepared. Black-Right-Pointing-Pointer The current density-voltage (J-V) curves were analyzed using the Power Series (PS). Black-Right-Pointing-Pointer The J-V characteristics were found to be well described with PS at low order. Black-Right-Pointing-Pointer The thermionic emission and diode leakage currents were comparatively discussed.

  6. PERFORMANCE OF LEAKAGE POWER MINIMIZATION TECHNIQUE FOR CMOS VLSI TECHNOLOGY

    Directory of Open Access Journals (Sweden)

    T. Tharaneeswaran

    2012-06-01

    Full Text Available Leakage power of CMOS VLSI Technology is a great concern. To reduce leakage power in CMOS circuits, a Leakage Power Minimiza-tion Technique (LPMT is implemented in this paper. Leakage cur-rents are monitored and compared. The Comparator kicks the charge pump to give body voltage (Vbody. Simulations of these circuits are done using TSMC 0.35µm technology with various operating temper-atures. Current steering Digital-to-Analog Converter (CSDAC is used as test core to validate the idea. The Test core (eg.8-bit CSDAC had power consumption of 347.63 mW. LPMT circuit alone consumes power of 6.3405 mW. This technique results in reduction of leakage power of 8-bit CSDAC by 5.51mW and increases the reliability of test core. Mentor Graphics ELDO and EZ-wave are used for simulations.

  7. Impact Analysis of Electrical Current Characteristics in Relay Function for Electrical and Electronic Protection

    International Nuclear Information System (INIS)

    Syirrazie Che Soh; Harzawadi Hasim

    2013-01-01

    This paper is to study effect of electrical current on relay reaction, which has coil and switch inside the relay. An analysis on the electrical current will be conducted to determine current limitation for relay activation purpose. The result of analysis showing that current characteristic of relay and applied load will present their affect to the relay function performance. Finding from this result will bring the idea to develop a suitable design circuit for electrical and electronic protection. (author)

  8. Nanoscale Ferroelectric Switchable Polarization and Leakage Current Behavior in (Ba0.50Sr0.50(Ti0.80Sn0.20O3 Thin Films Prepared Using Chemical Solution Deposition

    Directory of Open Access Journals (Sweden)

    Venkata Sreenivas Puli

    2015-01-01

    Full Text Available Nanoscale switchable ferroelectric (Ba0.50Sr0.50(Ti0.80Sn0.20O3-BSTS polycrystalline thin films with a perovskite structure were prepared on Pt/TiOx/SiO2/Si substrate by chemical solution deposition. X-ray diffraction (XRD spectra indicate that a cubic perovskite crystalline structure and Raman spectra revealed that a tetragonal perovskite crystalline structure is present in the thin films. Sr2+ and Sn4+ cosubstituted film exhibited the lowest leakage current density. Piezoresponse Force Microscopy (PFM technique has been employed to acquire out-of-plane (OPP piezoresponse images and local piezoelectric hysteresis loop in polycrystalline BSTS films. PFM phase and amplitude images reveal nanoscale ferroelectric switching behavior at room temperature. Square patterns with dark and bright contrasts were written by local poling and reversible nature of the piezoresponse behavior was established. Local piezoelectric butterfly amplitude and phase hysteresis loops display ferroelectric nature at nanoscale level. The significance of this paper is to present ferroelectric/piezoelectric nature in present BSTS films at nanoscale level and corroborating ferroelectric behavior by utilizing Raman spectroscopy. Thus, further optimizing physical and electrical properties, BSTS films might be useful for practical applications which include nonvolatile ferroelectric memories, data-storage media, piezoelectric actuators, and electric energy storage capacitors.

  9. Voltage-current characteristics of multiterminal HVDC-VSC for offshore wind farms

    Energy Technology Data Exchange (ETDEWEB)

    Gomis-Bellmunt, Oriol [Centre d' Innovacio Tecnologica en Convertidors Estatics i Accionaments (CITCEA-UPC), Universitat Politecnica de Catalunya UPC, Av. Diagonal, 647, Pl. 2., 08028 Barcelona (Spain); IREC Catalonia Institute for Energy Research, Barcelona (Spain); Liang, Jun; Ekanayake, Janaka; Jenkins, Nicholas [School of Engineering, Cardiff University, Queen' s Buildings, The Parade, Cardiff CF24 3AA, Wales (United Kingdom)

    2011-02-15

    Voltage-current characteristics and equilibrium points for the DC voltages of multiterminal HVDC systems using voltage source converters are discussed. The wind farm rectifiers and grid connected inverters are analyzed through their operating modes, governing equations and graphical characteristics. Using the converter equations and the HVDC grid conductance matrix the equilibrium voltages and currents are found. Case studies are presented considering wind power generation, loss of a converter and voltage sags in the AC grid. (author)

  10. Classification of methods for measuring current-voltage characteristics of semiconductor devices

    Directory of Open Access Journals (Sweden)

    Iermolenko Ia. O.

    2014-06-01

    Full Text Available It is shown that computer systems for measuring current-voltage characteristics are very important for semiconductor devices production. The main criteria of efficiency of such systems are defined. It is shown that efficiency of such systems significantly depends on the methods for measuring current-voltage characteristics of semiconductor devices. The aim of this work is to analyze existing methods for measuring current-voltage characteristics of semiconductor devices and to create the classification of these methods in order to specify the most effective solutions in terms of defined criteria. To achieve this aim, the most common classifications of methods for measuring current-voltage characteristics of semiconductor devices and their main disadvantages are considered. Automated and manual, continuous, pulse, mixed, isothermal and isodynamic methods for measuring current-voltage characteristics are analyzed. As a result of the analysis and generalization of existing methods the next classification criteria are defined: the level of automation, the form of measurement signals, the condition of semiconductor device during the measurements, and the use of mathematical processing of the measurement results. With the use of these criteria the classification scheme of methods for measuring current-voltage characteristics of semiconductor devices is composed and the most effective methods are specified.

  11. Analysis of the current-voltage characteristics lineshapes of resonant tunneling diodes

    International Nuclear Information System (INIS)

    Rivera, P.H.; Schulz, P.A.

    1996-01-01

    It is discussed the influence of a two dimensional electron gas at the emitter-barrier interface on the current-voltage characteristics of a Ga As-Al Ga As double-barrier quantum well resonant tunneling diode. This effect is characterized by the modification of the space charge distribution along the structure. Within the framework of a self-consistent calculation we analyse the current-voltage characteristics of the tunneling diodes. This analysis permits us to infer different tunneling ways, related to the formation of confined states in the emitter region, and their signatures in the current-voltage characteristics. We show that varying the spacer layer, together with barrier heights, changes drastically the current density-voltage characteristics lineshapes. We compare our results with a variety of current-voltage characteristics lineshapes. We compare our results with a variety of current-voltage characteristics reported in the literature. The general trend of experimental lineshapes can be reproduced and interpreted with our model. The possibility of tunneling paths is predicted for a range that has not yet been explored experimentally. (author). 12 refs., 4 figs

  12. Characteristics of current quenches during disruptions in the J-TEXT tokamak

    International Nuclear Information System (INIS)

    Zhang, Y; Chen, Z Y; Fang, D; Jin, W; Huang, Y H; Wang, Z J; Yang, Z J; Chen, Z P; Ding, Y H; Zhang, M; Zhuang, G

    2012-01-01

    Characteristics of tokamak current quenches are an important issue for the determination of electro-magnetic forces that act on the in-vessel components and vacuum vessel during major disruptions. The characteristics of current quenches in spontaneous disruptions in the J-TEXT tokamak have been investigated. It is shown that the waveforms for the fastest current quenches are more accurately fitted by linear current decays than exponential, although neither is a good fit in many slower cases. The minimum current quench time is about 2.4 ms for the J-TEXT tokamak. The maximum instantaneous current quench rate is more than seven times the average current quench rate in J-TEXT. (paper)

  13. Features of current-voltage characteristic of nonequilibrium trench MOS barrier Schottky diode

    Science.gov (United States)

    Mamedov, R. K.; Aslanova, A. R.

    2018-06-01

    The trench MOS barrier Schottky diodes (TMBS diode) under the influence of the voltage drop of the additional electric field (AEF) appearing in the near-contact region of the semiconductor are in a nonequilibrium state and their closed external circuit flows currents in the absence of an external voltage. When an external voltage is applied to the TMBS diode, the current transmission is described by the thermionic emission theory with a specific feature. Both forward and reverse I-V characteristics of the TMBS diode consist of two parts. In the initial first part of the forward I-V characteristic there are no forward currents, but reverse saturation currents flow, in its subsequent second part the currents increase exponentially with the voltage. In the initial first part of the reverse I-V characteristic, the currents increase in an abrupt way and in the subsequent second part the saturation currents flow under the action of the image force. The mathematical expressions for forward and reverse I-V characteristic of the TMBS diode and also narrow or nanostructure Schottky diode are proposed, which are in good agreement with the results of experimental and calculated I-V characteristics.

  14. Current-voltage characteristic of parallel-plane ionization chamber with inhomogeneous ionization

    International Nuclear Information System (INIS)

    Stoyanov, D G

    2007-01-01

    The balances of particles and charges in the volume of parallel-plane ionization chamber are considered. Differential equations describing the distribution of current densities in the chamber volume are obtained. As a result of the differential equations solution an analytical form of the current-voltage characteristic of parallel-plane ionization chamber with inhomogeneous ionization in the volume is obtained

  15. Current-voltage characteristic of parallel-plane ionization chamber with inhomogeneous ionization

    Energy Technology Data Exchange (ETDEWEB)

    Stoyanov, D G [Faculty of Engineering and Pedagogy in Sliven, Technical University of Sofia, 59, Bourgasko Shaussee Blvd, 8800 Sliven (Bulgaria)

    2007-08-15

    The balances of particles and charges in the volume of parallel-plane ionization chamber are considered. Differential equations describing the distribution of current densities in the chamber volume are obtained. As a result of the differential equations solution an analytical form of the current-voltage characteristic of parallel-plane ionization chamber with inhomogeneous ionization in the volume is obtained.

  16. Junction leakage measurements with micro four-point probes

    DEFF Research Database (Denmark)

    Lin, Rong; Petersen, Dirch Hjorth; Wang, Fei

    2012-01-01

    We present a new, preparation-free method for measuring the leakage current density on ultra-shallow junctions. The junction leakage is found by making a series of four-point sheet resistance measurements on blanket wafers with variable electrode spacings. The leakage current density is calculated...... using a fit of the measured four-point resistances to an analytical two-sheet model. The validity of the approximation involved in the two-sheet model is verified by a comparison to finite element model calculations....

  17. Research on Harmonic Characteristic of Electronic Current Transformer Based on the Rogowski Coil

    Science.gov (United States)

    Shen, Diqiu; Hu, Bei; Wang, Xufeng; Zhu, Mingdong; Wang, Liang; Lu, Wenxing

    2017-05-01

    The nonlinear load present in the power system will cause the distortion of AC sine wave and generate the harmonic, which havea severe impact on the accuracy of energy metering and reliability of relay protection. Tosatisfy the requirements of energy metering and relay protection for the new generation of intelligent substation, based on the working principle of Rogowski coil current transformer, mathematical model and transfer characteristics of Rogowski coil sensors were studied in this paper, and frequency response characteristics of Rogowski coil current transformer system were analysed. Finally, the frequency response characteristics of the Rogowski coil current transformer at 2 to 13 harmonics was simulated and experimented. Simulation and experiments show that Rogowski coil current transformer couldmeet 0.2 accuracy requirements of harmonic power measurement of power system, and measure the harmonic components of the grid reliably.

  18. Current-voltage characteristic of a resonant tunneling diode under electromagnetic radiation

    Directory of Open Access Journals (Sweden)

    N Hatefi Kargan

    2013-09-01

    Full Text Available  In this paper, current-voltage characteristic of a resonant tunneling diode under electromagnetic radiation has been calculated and compared with the results when there is no electromagnetic radiation. For calculating current -voltage characteristic, it is required to calculate the transmission coefficient of electrons from the well and barrier structures of this device. For calculating the transmission coefficient of electrons at the presence of electromagnetic radiation, Finite Difference Time Domain (FDTD method has been used and when there is no electromagnetic radiation Transfer Matrix Method (TMM and finite diffirence time domain method have been used. The results show that the presence of electromagnetic radiation causes resonant states other than principal resonant state (without presence of electromagnetic radiation to appear on the transmition coefficient curve where they are in distances from the principal peak and from each other. Also, the presence of electromagnetic radiation causes peaks other than principal peak to appear on the current-voltage characteristics of the device. Under electromagnetic radiation, the number of peaks on the current-voltage curve is smaller than the number of peaks on the current-voltage transmission coefficient. This is due to the fact that current-voltage curve is the result of integration on the energy of electrons, Thus, the sharper and low height peaks on the transmission coefficient do not appear on the current-voltage characteristic curve.

  19. Macrophage migration inhibitory factor induces vascular leakage via autophagy

    Directory of Open Access Journals (Sweden)

    Hong-Ru Chen

    2015-01-01

    Full Text Available Vascular leakage is an important feature of acute inflammatory shock, which currently has no effective treatment. Macrophage migration inhibitory factor (MIF is a pro-inflammatory cytokine that can induce vascular leakage and plays an important role in the pathogenesis of shock. However, the mechanism of MIF-induced vascular leakage is still unclear. In this study, using recombinant MIF (rMIF, we demonstrated that MIF induced disorganization and degradation of junction proteins and increased the permeability of human endothelial cells in vitro. Western blotting analysis showed that rMIF treatment induced LC3 conversion and p62 degradation. Inhibition of autophagy with a PI3K inhibitor (3-MA, a ROS scavenger (NAC or autophagosomal-lysosomal fusion inhibitors (bafilomycin A1 and chloroquine rescued rMIF-induced vascular leakage, suggesting that autophagy mediates MIF-induced vascular leakage. The potential involvement of other signaling pathways was also studied using different inhibitors, and the results suggested that MIF-induced vascular leakage may occur through the ERK pathway. In conclusion, we showed that MIF triggered autophagic degradation of endothelial cells, resulting in vascular leakage. Inhibition of MIF-induced autophagy may provide therapeutic targets against vascular leakage in inflammatory shock.

  20. Current diffusion in a superconduting composite with a smeared I-V characteristic

    International Nuclear Information System (INIS)

    Keilin, V.E.; Romanovskii, V.R.

    1992-01-01

    Results are presented from numerical and analytical calculations of current injection into a superconducting composite of circular cross section with homogeneous properties throughout the cross section. A wire with an I-V characteristic approximated by an exponential dependence is examined. In the numerical solution, the joint occurrence of thermal and electromagnetic processes is taken into account. The calculations carried out for different current injection rates, parameters of the I-V characteristics, and heat transfer coefficients revealed: the existence of a characteristic limit current, below which the wire remains in a superconducting state after termination of current injection and above which the wire undergoes a transition to the normal state; this is somewhat below the cut-off current; the existence of a finite current at any small yet finite surface heat transfer coefficient. An analytical solution of the problem, based of the derived stability criterion, has made if possible to write an approximate relation between the limit currents and the initial parameters. Unlike previously reported results, this study takes into account the tolerable overheating of the wire, which depends on the depth of current flow, the specific heat of the wire, and its thermal and electrical conductivities

  1. The dynamic current-voltage characteristic as a powerful tool to analyze fast phenomena in plasma

    International Nuclear Information System (INIS)

    Ivan, L. M.; Mihai-Plugaru, M.; Amarandei, G.; Aflori, M.; Dimitriu, D. G.

    2006-01-01

    The static current-voltage characteristic of an electrode immersed in plasma is obtained by slowly increasing and subsequently decreasing the potential on the electrode with respect to the plasma potential or the ground. This characteristic can give us important information about the phenomena that take place in front of the electrode. Current jumps can be evidenced which were often associated with an hysteresis effect, regions with S-type or N-type negative differential resistance, etc. The method is always used when we investigate the appearance of complex space charge configurations (CSCC) in front of an electrode immersed in plasma. However, to investigate the dynamics of such structures or other fast phenomena (like instabilities) which take place in plasma devices with frequencies of tenth, hundred kHz or more, complex investigation techniques must be used. One of the most efficient methods to investigate fast phenomena in plasma devices is the dynamic current-voltage characteristic. This is obtained by recording the time series of the current collected by the electrode when the voltage applied on it is very fast modified (most likely increased) by using a signal generator. In this way, very fast oscillations of the current can be recorded and new phenomena can be evidenced. We used this technique to study the phenomena which take place at the onset of electrostatic instabilities in Q-machine plasma, namely the potential relaxation instability (PRI) and the electrostatic ion-cyclotron instability (EICI). The obtained experimental results prove that the negative differential resistance region in the static current-voltage characteristic is the result of a nonlinear dynamics of a CSCC in form of a double layer (DL) which takes place just before the onset of the instabilities. In the case of the PRI we emphasized current jumps related with the DL appearance, which are not present in the static current-voltage characteristic at high plasma density. (authors)

  2. Leakage monitoring device and method

    International Nuclear Information System (INIS)

    Yamada, Izumi; Matsui, Yuji; Fujimori, Haruo.

    1995-01-01

    In a water leakage monitor for a steam generator, output signals from an acoustic sensor disposed in the vicinity of a region to be monitored is subjected to phasing calculation (beam forming calculation) to determine the distribution of a sound source intensity distribution. A peak is retrieved based on the distribution of the sound source intensity distribution. A correction coefficient depending on the position of the peak is multiplied to the sound source intensity. The presence or absence of leakage is determined based on the degree of the sound source intensity after the completion of correction. Namely, a relative value of sound source intensity for each of the portions in the region to be monitored is determined, and the point of the greatest sound source intensity is assumed as a leaking point, to determine the position of the leakage. An absolute value of the sound source intensity at the leaking point is determined by such a constitution that a correction coefficient depending on the position is multiplied to the intensity of the position of the peak in the distribution of the sound intensity. A threshold value for the determination of the presence or absence of the leakage can be set if a relation between an amount of the leakage previously determined experimentally and the intensity of the sound source. Then, a countermeasure can easily be taken after the detection of the leakage and a restoring operation can be carried out rapidly after the occurrence of leakage while avoiding unnecessary shutdown. (N.H.)

  3. Investigation of the double exponential in the current-voltage characteristics of silicon solar cells

    Science.gov (United States)

    Wolf, M.; Noel, G. T.; Stirn, R. J.

    1976-01-01

    A theoretical analysis is presented of certain peculiarities of the current-voltage characteristics of silicon solar cells, involving high values of the empirical constant A in the diode equation for a p-n junction. An attempt was made in a lab experiment to demonstrate that the saturation current which is associated with the exponential term qV/A2kT of the I-V characteristic, with A2 roughly equal to 2, originates in the space charge region and that it can be increased, as observed on ATS-1 cells, by the introduction of additional defects through low energy proton irradiation. It was shown that the proton irradiation introduces defects into the space charge region which give rise to a recombination current from this region, although the I-V characteristic is, in this case, dominated by an exponential term which has A = 1.

  4. Special features of the current-voltage characteristics of short superconducting bridges

    International Nuclear Information System (INIS)

    Zhilinskii, S.; Latyshev, Y.; Nad', F.

    1981-01-01

    A study was made of variable-thickness superconducting bridges made of tin and indium. The current-voltage characteristics were determined for these bridges as a function of their length and width. The characteristics exhibited a linear region as well as an inflection. The temperature of the appearance of such an inflection depended on the length of the bridge but was independent of the bridge material

  5. Effect of the periphery of metal-semiconductor contacts with Schottky barriers on their static current-voltage characteristic

    International Nuclear Information System (INIS)

    Torkhov, N. A.

    2010-01-01

    Kelvin probe atomic-force microscopy of the electrostatic surface potential of gold Schottky contacts on n-GaAs showed that there is an extended transition area (halo) (tens of micrometers) around contacts in which the surface potential varies from the n-GaAs free surface potential to the gold contact surface potential. The contact potential and its distribution in the surrounding halo are controlled by the contact structure. The study of spreading currents showed that there is a high-conductance area (periphery) around the contact perimeter due to strong electric fields of the halo, which causes leakage currents. The conductivity of the main contact area is caused by 100- to 200-nm local areas with higher and lower conducting abilities. Mesa formation around contacts causes a decrease in the work function, a decrease in the halo extent and electric field strength, which is accompanied by spreading and decreasing of the peripheral area conductance. This results in disappearance of leakage currents and a decrease in the ideality index. In contrast, protection of the peripheral area by a SiO 2 insulating film 0.5 μm thick increases the work function, which is accompanied by the formation of potential lobes around the contact in two mutually perpendicular crystallographic directions. A stronger penetration of halo electric fields into the contact area results in an increase in the ideality index and disappearance of high-conductance peripheral area and leakage currents. The difference between the electrical properties of the periphery, gold grains, and their boundaries controls the contact switching mechanism when applying forward or reverse biases.

  6. Dynamic voltage-current characteristics for a water jet plasma arc

    International Nuclear Information System (INIS)

    Yang Jiaxiang; Lan Sheng; Xu Zuoming

    2008-01-01

    A virtual instrument technology is used to measure arc current, arc voltage, dynamic V-I characteristics, and nonlinear conductance for a cone-shaped water jet plasma arc under ac voltage. Experimental results show that ac arc discharge mainly happens in water vapor evaporated from water when heated. However, due to water's cooling effect and its conductance, arc conductance, reignition voltage, extinguish voltage, and current zero time are very different from those for ac arc discharge in gas work fluid. These can be valuable to further studies on mechanism and characteristics of plasma ac discharge in water, and even in gas work fluid

  7. Signal Characteristics of Eddy Current Test for Intergranular Attack of Steam Generator Tubes

    International Nuclear Information System (INIS)

    Choi, Myung Sik; Lee, Deok Hyun; Han, Jung Ho; Hur, Do Haeng; Cho, Se Gon; Yim, Chang Jae

    2002-01-01

    Because intergranular attack (IGA), one of the localized corrosion forms occurring on steam generator tubes, can not be fabricated by an electric discharge machining method, there are few data for the eddy current test (ECT) characteristics of IGA. In this paper, the characteristics of eddy current signals are evaluated using nonexpanded tubes with IGA defects formed in 0.1 M sodium tetrathionate solution at 40 .deg. C. The detectability and sizing accuracy of IGA were discussed in terms of the coil type and frequency of the ECT probes

  8. Inner volume leakage during integrated leakage rate testing

    International Nuclear Information System (INIS)

    Glover, J.P.

    1987-01-01

    During an integrated leak rate test (ILRT), the containment structure is maintained at test pressure with most penetrations isolated. Since penetrations typically employ dual isolation, the possibility exists for the inner isolation to leak while the outer holds. In this case, the ILRT instrumentation system would indicate containment out-leakage when, in fact, only the inner volume between closures is being pressurized. The problem is compounded because this false leakage is not readily observable outside of containment by standard leak inspection techniques. The inner volume leakage eventually subsides after the affected volumes reach test pressure. Depending on the magnitude of leakage and the size of the volumes, equalization could occur prior to the end of the pretest stabilization period, or significant false leakages may persist throughout the entire test. Two simple analyses were performed to quantify the effects of inside volume leakages. First, a lower bound for the equalization time was found. A second analysis was performed to find an approximate upper bound for the stabilization time. The results of both analyses are shown

  9. Current limiting characteristics of transformer type SFCL with coupled secondary windings according to its winding direction

    Energy Technology Data Exchange (ETDEWEB)

    Lim, Sung Hun [Dept. of Electrical Engineering, Soongsil University, Seoul (Korea, Republic of); Han, Tae Hee [Dept. of Aero Materials Engineering, Jungwon University, Goesan (Korea, Republic of)

    2017-06-15

    In this paper, the current limiting characteristics of the transformer type superconducting fault current limiter (SFCL) with the two coupled secondary windings due to its winding direction were analyzed. To analyze the dependence of transient fault current limiting characteristics on the winding direction of the additional secondary winding, the fault current limiting tests of the SFCL with an additional secondary winding, wound as subtractive polarity winding and additive polarity winding, were carried out. The time interval of quench occurrence between two superconducting elements comprising the transformer type SFCL with the additional secondary winding was confirmed to be affected by the winding direction of the additional secondary winding. In case of the subtractive polarity winding of the additional secondary winding, the time interval of the quench occurrence in two superconducting elements was shorter than the case of the additive polarity winding.

  10. Current-voltage characteristics of C70 solid near Meyer-Neldel temperature

    Science.gov (United States)

    Onishi, Koichi; Sezaimaru, Kouki; Nakashima, Fumihiro; Sun, Yong; Kirimoto, Kenta; Sakaino, Masamichi; Kanemitsu, Shigeru

    2017-06-01

    The current-voltage characteristics of the C70 solid with hexagonal closed-packed structures were measured in the temperature range of 250-450 K. The current-voltage characteristics can be described as a temporary expedient by a cubic polynomial of the voltage, i = a v 3 + b v 2 + c v + d . Moreover, the Meyer-Neldel temperature of the C70 solid was confirmed to be 310 K, at which a linear relationship between the current and voltage was observed. Also, at temperatures below the Meyer-Neldel temperature, the current increases with increasing voltage. On the other hand, at temperatures above the Meyer-Neldel temperature a negative differential conductivity effect was observed at high voltage side. The negative differential conductivity was related to the electric field and temperature effects on the mobility of charge carrier, which involve two variations in the carrier concentration and the activation energy for carrier hopping transport.

  11. Current limiting characteristics of transformer type SFCL with coupled secondary windings according to its winding direction

    International Nuclear Information System (INIS)

    Lim, Sung Hun; Han, Tae Hee

    2017-01-01

    In this paper, the current limiting characteristics of the transformer type superconducting fault current limiter (SFCL) with the two coupled secondary windings due to its winding direction were analyzed. To analyze the dependence of transient fault current limiting characteristics on the winding direction of the additional secondary winding, the fault current limiting tests of the SFCL with an additional secondary winding, wound as subtractive polarity winding and additive polarity winding, were carried out. The time interval of quench occurrence between two superconducting elements comprising the transformer type SFCL with the additional secondary winding was confirmed to be affected by the winding direction of the additional secondary winding. In case of the subtractive polarity winding of the additional secondary winding, the time interval of the quench occurrence in two superconducting elements was shorter than the case of the additive polarity winding

  12. Limiting characteristics of the superconducting fault current limiter applied to the neutral line of conventional transformer

    International Nuclear Information System (INIS)

    Im, I.G.; Choi, H.S.; Jung, B.I.

    2013-01-01

    Highlights: •Fault current limiter was used a high-speed interrupter. •High-speed interrupter was operated to bypass to the current limiter line. •The size of the fault current was limited to about 80% after the fault occurred. •The fault current was limited quickly within a half-cycle after the fault occurred. -- Abstract: The increased electricity demands influenced by the recent industrial development make the electric power distribution system more comprehensive, and the risks are high to cause failures to steady state electric line due to the extended range of fault at the time of fault occurrence. Also, the high performance and the high precision electric appliances that sensitive to switching surge and fault current expose vulnerability of reduced life span and increased fault occurrence ratio. Therefore, this thesis analyzed the fault limiting characteristics by the fault types by applying the superconducting fault current limiter to the neutral line of the transformer in order to reduce the fault currents that flow such high performance appliances. A current transformer (CT) that detects the fault current in the simulated power distribution system, a switching control system that is self-developed and a transformer are used in constructing a circuit. When a fault occurs, the initial fault current is restricted by the superconducting fault current limiter and simultaneously detours the fault current by operating the SCR contact of the switching control system through the detection by CT. This thesis analyzed the limiting characteristics of the superconducting fault current limiter that are applied to the neutral line of the transformer by the fault types

  13. Limiting characteristics of the superconducting fault current limiter applied to the neutral line of conventional transformer

    Energy Technology Data Exchange (ETDEWEB)

    Im, I.G., E-mail: asiligo@gmail.com; Choi, H.S., E-mail: hyosang@chosun.ac.kr; Jung, B.I.

    2013-11-15

    Highlights: •Fault current limiter was used a high-speed interrupter. •High-speed interrupter was operated to bypass to the current limiter line. •The size of the fault current was limited to about 80% after the fault occurred. •The fault current was limited quickly within a half-cycle after the fault occurred. -- Abstract: The increased electricity demands influenced by the recent industrial development make the electric power distribution system more comprehensive, and the risks are high to cause failures to steady state electric line due to the extended range of fault at the time of fault occurrence. Also, the high performance and the high precision electric appliances that sensitive to switching surge and fault current expose vulnerability of reduced life span and increased fault occurrence ratio. Therefore, this thesis analyzed the fault limiting characteristics by the fault types by applying the superconducting fault current limiter to the neutral line of the transformer in order to reduce the fault currents that flow such high performance appliances. A current transformer (CT) that detects the fault current in the simulated power distribution system, a switching control system that is self-developed and a transformer are used in constructing a circuit. When a fault occurs, the initial fault current is restricted by the superconducting fault current limiter and simultaneously detours the fault current by operating the SCR contact of the switching control system through the detection by CT. This thesis analyzed the limiting characteristics of the superconducting fault current limiter that are applied to the neutral line of the transformer by the fault types.

  14. Calculation of DC Arc Plasma Torch Voltage- Current Characteristics Based on Steebeck Model

    International Nuclear Information System (INIS)

    Gnedenko, V.G.; Ivanov, A.A.; Pereslavtsev, A.V.; Tresviatsky, S.S.

    2006-01-01

    The work is devoted to the problem of the determination of plasma torches parameters and power sources parameters (working voltage and current of plasma torch) at the predesigning stage. The sequence of calculation of voltage-current characteristics of DC arc plasma torch is proposed. It is shown that the simple Steenbeck model of arc discharge in cylindrical channel makes it possible to carry out this calculation. The results of the calculation are confirmed by the experiments

  15. Analysis and Synthesis of WAVCIS Data for Characteristics of Waves and Currents on Louisiana Coast

    Science.gov (United States)

    Li, C.; Gibson, B.; Huang, W.; Luo, Y.; Milan, B.

    2017-12-01

    Texas-Louisiana coastal currents have been studied before, with a generally well-known pattern that is quasi steady except during the summer when it may weaken or reverse briefly. In the past decade, lot more efforts have been made and there is a large quantity of current velocity data accumulated. Among these data are those from the long-term mooring observations from the Wave Current-Surge Information System (WAVCIS), with a focus on the Louisiana coastal waters. More specifically, velocity and wave time series from current meters and pressure sensors or directional wave sensors at several locations on Louisiana coast provided unique opportunity to analyze and synthesize the characteristics of waves and currents on both east and west side of the Birdfoot Delta. In this study, we assembled all available WAVCIS data for a thorough analysis and synthesis of the characteristics of waves and coastal current in the area as a function of weather during different seasons. Year-to-year variabilities and seasonal variations are discussed. Spectrum, harmonic, and EOF analyses allowed a description and comparison of circulation patterns, wave and flow energy regimes, vertical shear of horizontal flows, tidal characteristics, synoptic weather effect, and severe weather impact. We provide basic statistics, as well as classifications of type of flows/circulations, and the major mechanisms that contribute to the variability.

  16. A Framework to Estimate CO2 Leakage associated with Geological Storage in Mature Sedimentary Basins

    Science.gov (United States)

    Celia, M. A.; Bachu, S.; Gasda, S.

    2002-12-01

    Geological storage of carbon dioxide requires careful risk analysis to avoid unintended consequences associated with the subsurface injection. Most negative consequences of subsurface injection are associated with leakage of the injected CO2 out of the geological formation into which it is injected. Such leakage may occur through natural geological features, including fractures and faults, or it may occur through human-created pathways such as existing wells. Possible leakage of CO2 through existing wells appears to be especially important in mature sedimentary basins that have been explored intensively and exploited for hydrocarbon production. In the Alberta Basin of western Canada, more than 300,000 oil and gas wells have been drilled, while in the state of Texas in the United States, more than 1,500,000 wells have been drilled. Many of these wells have been abandoned, and the information available to describe their current state is highly variable and sometimes nonexistent. Because these wells represent possible direct conduits from the injection zone to the land surface, a comprehensive assessment of leakage potential associated with these wells needs to be pursued. Analysis of leakage potential associated with existing wells must combine a data mining component with a multi-level modeling effort to assess leakage potential in a probabilistic framework. Information available for existing wells must be categorized and analyzed, and general leakage characteristics associated with wells of varying properties must be quantified. One example of a realistic target formation is the Viking Formation in Alberta, which is overlain by a thick shale layer and contains hydrocarbon in some locations. The existence of hydrocarbon in the formation indicates that the overlying shale layer is an effective barrier to flow, and therefore this is a good candidate formation for CO2 storage. However, the formation and its cap rock are punctured by approximately 180,000 wells, with

  17. Climate Policy and Carbon Leakage

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2008-07-01

    This report explores the effects of the EU emissions trading scheme on the aluminium sector (i.e. competitiveness loss and carbon leakage). With its very high electricity intensity, primary aluminium stands out in the heavy industry picture: a sector whose emissions are not capped in the present EU ETS, European aluminium smelters still stand to lose profit margins and, possibly, market shares, as electricity prices increase following CO2 caps on generators' emissions - the famous pass-through of CO2 prices into electricity prices. The analysis includes a method of quantification of this issue, based on two indicators: profit margins and trade flows. As the EU is at the forefront of such policy, the paper provides policy messages to all countries on how trade exposed energy-intensive industries can be 'moved' by carbon constraint. This also is a contentious topic in Australia, Japan, New Zealand, and the US, where ambitious climate policies -- including cap-and-trade systems -- are currently debated.

  18. Recovery characteristics of flux-lock type superconducting fault current limiter

    International Nuclear Information System (INIS)

    Han, T.H.; Choi, H.S.; Lim, S.H.; Lee, N.Y.

    2007-01-01

    The flux-lock type superconducting fault current limiter (SFCL) has attractive characteristics that the current limiting level can be adjusted by a winding direction and the inductance ratio between two coils. We changed the winding direction and the number of coils to compare the resistive type SFCL with the flux-lock type SFCL. The initial limiting current (I ini ) and quench characteristic were dependent on the winding direction and the inductance ratio of two coils. As a winding number was increased from 21 to 42, I ini and quench characteristic were proportionally increased. In additive polarity winding, I ini was 10.2 A and the quench time (T q ) was 0.53 ms, which was faster than that of a subtractive polarity winding. The consumed energy and recovery characteristics in a superconducting element showed the same tendency. Recovery characteristics in the flux-lock type SFCL were dependent on the consumed energy of a superconducting element. The recovery time was related to a heat energy and it was represented as the consuming time of the heat energy. As the heat energy was shown in H 0.24I 2 Rt, the recovery time was shortened in the following order: a subtractive polarity winding, a resistive type and an additive polarity winding. It was known that the recovery time was proportional to a consumed energy of a superconducting element

  19. Singularities of current-voltage characteristics of GaAs films fabricated by pulsed ions ablation

    International Nuclear Information System (INIS)

    Kabyshev, A.V.; Konusov, F.V.; Lozhnikov, S.N.; Remnev, G.E.; Saltymakov, M.S.

    2009-01-01

    A singularities and advantages of the optical, photoelectric and electrical properties of GaAs in comparison with other available materials for electronics, for example, silicon allow to manufacture on it base the devices having an advanced characteristics. The GaAs for electronics, obtained from the dense ablation plasma, possess some preferences as compared to material manufactured by traditional methods of vacuum deposition. The electrical characteristics of GaAs produced by chemical deposition were extensively studied. Purpose of this work is investigation the current-voltage characteristics of thin films of GaAs, deposited on polycrystalline corundum (polycor) from plasma forming the power ions bunch and determination of the thermal vacuum annealing effect on photoelectric and electrical properties of films. Peculiarities of optical, photoelectric and current-voltage characteristics of films obtained by ions ablation are determined by deposition conditions and resistance of initial target GaAs. The transitions between the states with low- and high conduction were revealed directly after deposition in films having the optical properties similar to amorphous materials and/or after annealing in films with properties similar to initial target GaAs. Behavior of current-voltage characteristics at vacuum annealing correlates with Schottky barrier height and photosensitivity and is accompanies of the transport mechanism change. The stable properties of films are formed at its dark conduction 10 -10 -10 -8 s and after annealing at T an =600-700 K. (authors)

  20. Improvement of light-current characteristic linearity in a quantum well laser with asymmetric barriers

    DEFF Research Database (Denmark)

    Zubov, F. I.; Zhukov, A. E.; Shernyakov, Yu M.

    2014-01-01

    The effect of asymmetric barriers on the light-current characteristic (LCC) of a quantum well laser was studied theoretically and experimentally. It is shown that the utilization of asymmetric barriers in a waveguide prevents the nonlinearity of LCC and, consequently, allows rising of the maximum...

  1. Comment on: "Current-voltage characteristics and zero-resistance state in 2DEG"

    OpenAIRE

    Cheremisin, M. V.

    2003-01-01

    We demonstrate that N(S)-shape current-voltage characteristics proposed to explain zero-resistance state in Corbino(Hall bar) geometry 2DEG (cond-mat/0302063, cond-mat/0303530) cannot account essential features of radiation-induced magnetoresistance oscillations experiments.

  2. Educational Attainment in the United States: 2015. Population Characteristics. Current Population Reports. P20-578

    Science.gov (United States)

    Ryan, Camille L.; Bauman, Kurt

    2016-01-01

    This report provides a portrait of educational attainment in the United States based on data collected from the Current Population Survey (CPS). The report examines educational attainment of the adult population by demographic and social characteristics such as age, sex, race and Hispanic origin, and disability status, as well as differences in…

  3. Current-voltage characteristics of bulk heterojunction organic solar cells: connection between light and dark curves

    Energy Technology Data Exchange (ETDEWEB)

    Boix, Pablo P.; Guerrero, Antonio; Garcia-Belmonte, Germa; Bisquert, Juan [Photovoltaic and Optoelectronic Devices Group, Departament de Fisica, Universitat Jaume I, ES-12071 Castello (Spain); Marchesi, Luis F. [Laboratorio Interdisciplinar de, Eletroquimica e Ceramica (LIEC), Universidade Federal de Sao Carlos (Brazil); Photovoltaic and Optoelectronic Devices Group, Departament de Fisica, Universitat Jaume I, ES-12071 Castello (Spain)

    2011-11-15

    A connection is established between recombination and series resistances extracted from impedance spectroscopy and current-voltage curves of polythiophene:fullerene organic solar cells. Recombination is shown to depend exclusively on the (Fermi level) voltage, which allows construction of the current-voltage characteristics in any required conditions based on a restricted set of measurements. The analysis highlights carrier recombination current as the determining mechanism of organic solar cell performance. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  4. Research on resistance characteristics of YBCO tape under short-time DC large current impact

    Science.gov (United States)

    Zhang, Zhifeng; Yang, Jiabin; Qiu, Qingquan; Zhang, Guomin; Lin, Liangzhen

    2017-06-01

    Research of the resistance characteristics of YBCO tape under short-time DC large current impact is the foundation of the developing DC superconducting fault current limiter (SFCL) for voltage source converter-based high voltage direct current system (VSC-HVDC), which is one of the valid approaches to solve the problems of renewable energy integration. SFCL can limit DC short-circuit and enhance the interrupting capabilities of DC circuit breakers. In this paper, under short-time DC large current impacts, the resistance features of naked tape of YBCO tape are studied to find the resistance - temperature change rule and the maximum impact current. The influence of insulation for the resistance - temperature characteristics of YBCO tape is studied by comparison tests with naked tape and insulating tape in 77 K. The influence of operating temperature on the tape is also studied under subcooled liquid nitrogen condition. For the current impact security of YBCO tape, the critical current degradation and top temperature are analyzed and worked as judgment standards. The testing results is helpful for in developing SFCL in VSC-HVDC.

  5. Transient analysis for alternating over-current characteristics of HTSC power transmission cable

    Science.gov (United States)

    Lim, S. H.; Hwang, S. D.

    2006-10-01

    In this paper, the transient analysis for the alternating over-current distribution in case that the over-current was applied for a high-TC superconducting (HTSC) power transmission cable was performed. The transient analysis for the alternating over-current characteristics of HTSC power transmission cable with multi-layer is required to estimate the redistribution of the over-current between its conducting layers and to protect the cable system from the over-current in case that the quench in one or two layers of the HTSC power cable happens. For its transient analysis, the resistance generation of the conducting layers for the alternating over-current was reflected on its equivalent circuit, based on the resistance equation obtained by applying discrete Fourier transform (DFT) for the voltage and the current waveforms of the HTSC tape, which comprises each layer of the HTSC power transmission cable. It was confirmed through the numerical analysis on its equivalent circuit that after the current redistribution from the outermost layer into the inner layers first happened, the fast current redistribution between the inner layers developed as the amplitude of the alternating over-current increased.

  6. Effect of interelectrode distance on dc magnetron current-pressure characteristics

    Science.gov (United States)

    Mankelevich, Yu A.; Pal, A. F.; Ryabinkin, A. N.; Serov, A. O.

    2018-01-01

    The current-pressure (I-P) non-monotonic characteristic in the magnetron discharge dc in argon at different interelectrode distances was investigated. The ion spatial distribution was obtained with optical emission spectroscopy and the characteristic dimensions of the discharge structure in near cathode region were determined. It is shown that decreasing the distance between electrodes does not affect the shape and position of the nonmonotonic part of I-P characteristic until this distance become comparable with the dimensions of the ionization region near cathode. The existence of non-monotonic part of I-P characteristic is determined by the processes in the near cathode region and is probably unrelated with the cold electron transfer in the rest of the plasma.

  7. Voltage-current characteristics of a pin-plate system with different plate configurations

    International Nuclear Information System (INIS)

    Feng, Zhuangbo; Long, Zhengwei

    2013-01-01

    In this paper, the voltage-current (V-I) characteristics of a pin-plate system with four types of collection plate configurations are studied experimentally. The collection plates consider a single metal plate, a metal plate with a fly ash cake layer, a metal plate with a clean filter media and a metal plate with a dirty filter media. The results show that the clean filter media has no obvious effect on the V-I characteristics. But the dirty filter media reduces the current density because of its high resistance. The thick fly ash cake layer increase current density because of the anti-corona effect but the increment is not very obvious.

  8. Leakage pattern of linear accelerator treatment heads from multiple vendors

    International Nuclear Information System (INIS)

    Lonski, P.R.; Taylor, M.L.; Franich, R.D.; Harty, P.; Clements, N.; Kron, T.

    2011-01-01

    Full text: Patient life expectancy post-radiotherapy is becoming longer. Therefore, secondary cancers caused by radiotherapy treatment have more time to develop. Increasing attention is being given to out-of-field dose resulting from scatter and accelerator head leakage. Dose leakage from equivalent positions on Varian600C, Varian21-X, Siemens Primus and Elekta Synergy-II linacs were measured with TLD 1 00 H dosimeter chips and compared. Treatment parameters such as field size and beam energy were altered. Leakage doses are presented as a percentage of the dose to isocentre (5 Gy). Results illustrate significant variations in leakage dose between linac models where no model emits consistently lower amounts of radiation leakage for all treatment parameters. Results are shown below. Leakage through the collimator assembly in different units is varying as a function of location and unit design by more than a factor of 10. Differences are more pronounced in comparing Varian or Elekta models, which are fitted with an additional collimator separate from the MLC leaves, to the Siemens model, which uses MLC leaves as its only secondary collimator. Further measurements are currently being taken at the patient plane with a directional detector system to determine the spatial distribution of high leakage sources.

  9. Fractal modeling of fluidic leakage through metal sealing surfaces

    Science.gov (United States)

    Zhang, Qiang; Chen, Xiaoqian; Huang, Yiyong; Chen, Yong

    2018-04-01

    This paper investigates the fluidic leak rate through metal sealing surfaces by developing fractal models for the contact process and leakage process. An improved model is established to describe the seal-contact interface of two metal rough surface. The contact model divides the deformed regions by classifying the asperities of different characteristic lengths into the elastic, elastic-plastic and plastic regimes. Using the improved contact model, the leakage channel under the contact surface is mathematically modeled based on the fractal theory. The leakage model obtains the leak rate using the fluid transport theory in porous media, considering that the pores-forming percolation channels can be treated as a combination of filled tortuous capillaries. The effects of fractal structure, surface material and gasket size on the contact process and leakage process are analyzed through numerical simulations for sealed ring gaskets.

  10. Influence of current and temperature on discharge characteristics of electrochemical nickel−cadmium system

    Directory of Open Access Journals (Sweden)

    Todorović Andreja

    2010-01-01

    Full Text Available The paper elaborates determination of characteristic values in the discharging process of non-hermetic nickel-cadmium galvanic battery with nominal voltage Un = 60 V and nominal capacity qn = C5 = 190 Ah and its dependence from current and temperature. Study has been performed with the set of experimental metering of voltages, electromotive force, current from discharge time range and electromotive force in steady state regime before and after battery charging. Electromotive force characteristics are obtained by using the Nernst’s equation, while the least square method was used to determine the average values of internal electrical resistivity, power losses and efficiency level. These results were used in the approximate exponential functions to determine the range dependence of the efficiency level from the internal electrical resistance of discharge current in reliance from the temperature range. Obtained results show that, in accordance to the given voltage variation of 10% Un, this type of battery holds maximal full load current of one hour capacity at the temperature of 25°C and maximal full load current of two hours capacity at the temperature of −30°C. The methodology used in the case study covers determination of the electromotive force in time range based on the metered results of values during complete battery fullness and emptiness with prior determination of equilibrium constants of galvanic battery reaction through method suggested by the author of this paper. Further process, using the electromotive force values obtained through the aforementioned process, the metered current, and approximate polynomial function of the nominal discharge voltage characteristic determines range of battery internal electric resistance from time, followed by the selection of discharge cases with average values for: voltage, electromotive force, internal electrical resistance, available and utilized power, power losses, and battery efficiency

  11. The detailed characteristics of positive corona current pulses in the line-to-plane electrodes

    Science.gov (United States)

    Xuebao, LI; Dayong, LI; Qian, ZHANG; Yinfei, LI; Xiang, CUI; Tiebing, LU

    2018-05-01

    The corona current pulses generated by corona discharge are the sources of the radio interference from transmission lines and the detailed characteristics of the corona current pulses from conductor should be investigated in order to reveal their generation mechanism. In this paper, the line-to-plane electrodes are designed to measure and analyze the characteristics of corona current pulses from positive corona discharges. The influences of inter-electrode gap and line diameters on the detail characteristics of corona current pulses, such as pulse amplitude, rise time, duration time and repetition frequency, are carefully analyzed. The obtained results show that the pulse amplitude and the repetition frequency increase with the diameter of line electrode when the electric fields on the surface of line electrodes are same. With the increase of inter-electrode gap, the pulse amplitude and the repetition frequency first decrease and then turn to be stable, while the rise time first increases and finally turns to be stable. The distributions of electric field and space charges under the line electrodes are calculated, and the influences of inter-electrode gap and line electrode diameter on the experimental results are qualitatively explained.

  12. Effect of electric and magnetic fields on current-voltage characteristics of a lyotropic liquid crystal

    International Nuclear Information System (INIS)

    Minasyants, M.Kh.; Badalyan, G. G.; Shahinian, A. A.

    1997-01-01

    The effect of electric and magnetic fields on current-voltage characteristics is studied for the lamellar phase in the lyotropic liquid-crystal sodium pentadecylsulfonate (SPDS)-water and lecithin-water systems. It has been found that the current-voltage characteristics of both systems have hysteresis. In the case of ionogenic SPDS, the hysteresis is formed due to ion current caused by the spatial reorientation of domains consisting of parallel lamellar fragments; in the case of lecithin, whose molecules contain dipoles, the hysteresis is formed due to the spatial reorientation of domains caused by the interaction of the resultant dipole moment of the domains with the electric field. It is shown that the introduction into lamellae of cetylpyridine bromide, which has an intrinsic magnetic moment, changes the resultant magnetic moment of domains and, thus, also the hysteresis loop of the current-voltage characteristic. The systems studied show the 'memory' effect with respect to both the electric and magnetic fields. Field-induced processes of domain reorientation were recorded by the method of small-angle x-ray scattering

  13. Induced Current Characteristics Due to Laser Induced Plasma and Its Application to Laser Processing Monitoring

    International Nuclear Information System (INIS)

    Madjid, Syahrun Nur; Idris, Nasrullah; Kurniawan, Koo Hendrik; Kagawa, Kiichiro

    2011-01-01

    In laser processing, suitable conditions for laser and gas play important role in ensuring a high quality of processing. To determine suitable conditions, we employed the electromagnetic phenomena associated with laser plasma generation. An electrode circuit was utilised to detect induced current due to the fast electrons propelled from the material during laser material processing. The characteristics of induced current were examined by changing parameters such as supplied voltage, laser pulse energy, number of laser shots, and type of ambient gas. These characteristics were compared with the optical emission characteristics. It was shown that the induced current technique proposed in this study is much more sensitive than the optical method in monitoring laser processing, that is to determine the precise focusing condition, and to accurately determine the moment of completion of laser beam penetration. In this study it was also shown that the induced current technique induced by CW CO 2 laser can be applied in industrial material processing for monitoring the penetration completion in a stainless steel plate drilling process.

  14. Current-voltage characteristics of carbon nanostructured field emitters in different power supply modes

    Science.gov (United States)

    Popov, E. O.; Kolosko, A. G.; Filippov, S. V.; Romanov, P. A.; Terukov, E. I.; Shchegolkov, A. V.; Tkachev, A. G.

    2017-12-01

    We received and compared the current-voltage characteristics of large-area field emitters based on nanocomposites with graphene and nanotubes. The characteristics were measured in two high voltage scanning modes: the "slow" and the "fast". Correlation between two types of hysteresis observed in these regimes was determined. Conditions for transition from "reverse" hysteresis to the "direct" one were experimentally defined. Analysis of the eight-shaped hysteresis was provided with calculation of the effective emission parameters. The phenomenological model of adsorption-desorption processes in the field emission system was proposed.

  15. Peculiarities on voltage - current characteristics of HTS tapes at overloading conditions cooled by liquid nitrogen

    International Nuclear Information System (INIS)

    Vysotsky, V S; Fetisov, S S; Sytnikov, V E

    2008-01-01

    Electro - technical devices are considered as the most prospective use for high temperature superconductors. For such devices the overload currents due to faults in grids are the operational reality. In these cases the fault currents may forcibly go to superconductors being sometimes dozens times more than the critical currents of HTS. Overloads are the working modes for fault current limiters also. To understand the behavior of HTS devices at overloads it is important to study voltage-current characteristics (VCC) of basic HTS tapes in real cooling conditions. The knowledge of VCC permits to model and to simulate properly HTS devices behavior at overloads. We performed the study of VCC of several HTS tapes at currents several times more than their critical ones. Both, 1-G and 2-G tapes were tested. There were found peculiarities or 'spikes' on VCC at rising currents that vanished at decaying currents. It was shown that such peculiarities are determined by the change of cooling conditions from the convective heat exchange to the nucleate boiling. Nucleate boiling activation and development times were determined. Their dependencies on heat release were measured. The data obtained can be used in simulation of heating of real superconducting devices at overload conditions

  16. Current-Voltage Characteristics of DC Discharge in Micro Gas Jet Injected into Vacuum Environment

    International Nuclear Information System (INIS)

    Matra, K; Furuta, H; Hatta, A

    2013-01-01

    A current-voltage characteristic of direct current (DC) gas discharge operated in a micro gas jet injected into a secondary electron microscope (SEM) chamber is presented. Ar gas was injected through a 30 μm orifice gas nozzle (OGN) and was evacuated by an additional pump to keep the high vacuum environment. Gas discharges were ignited between the OGN as anode and a counter electrode of Si wafer. The discharge was self-pulsating in most of the cases while it was stable at lower pressure, larger gap length, and larger time averaged current. The self-pulsating discharge was oscillated by the RC circuit consisting of a stray capacitor and a large ballast resistor. The real time plots of voltage and current during the pulsating was investigated using a discharge model.

  17. Photonic characterization of capacitance-voltage characteristics in MOS capacitors and current-voltage characteristics in MOSFETs

    International Nuclear Information System (INIS)

    Kim, H. C.; Kim, H. T.; Cho, S. D.; Song, S. J.; Kim, Y. C.; Kim, S. K.; Chi, S. S.; Kim, D. J.; Kim, D. M.

    2002-01-01

    Based on the photonic high-frequency capacitance-voltage (HF-CV) response of MOS capacitors, a new characterization method is reported for the analysis of interface states in MOS systems. An optical source with a photonic energy less than the silicon band-gap energy (hv g ) is employed for the photonic HF-CV characterization of interface states distributed in the photoresponsive energy band (E C - hv t C ). If a uniform distribution of trap levels is assumed, the density of interface states (D it ) in the photoresponsive energy band of MOS capacitors, characterized by the new photonic HF-CV method, was observed to be D it = 1 ∼ 5 x 10 11 eV -1 cm -2 . Photonic current-voltage characteristics (I D - V GS , V DS ) of MOSFETs, which are under control of the photoconductive and the photovoltaic effects, are also investigated under optical illumination

  18. Impurity Deionization Effects on Surface Recombination DC Current-Voltage Characteristics in MOS Transistors

    International Nuclear Information System (INIS)

    Chen Zuhui; Jie Binbin; Sah Chihtang

    2010-01-01

    Impurity deionization on the direct-current current-voltage characteristics from electron-hole recombination (R-DCIV) at SiO 2 /Si interface traps in MOS transistors is analyzed using the steady-state Shockley-Read-Hall recombination kinetics and the Fermi distributions for electrons and holes. Insignificant distortion is observed over 90% of the bell-shaped R-DCIV curves centered at their peaks when impurity deionization is excluded in the theory. This is due to negligible impurity deionization because of the much lower electron and hole concentrations at the interface than the impurity concentration in the 90% range. (invited papers)

  19. Transient characteristics of current lead losses for the large scale high-temperature superconducting rotating machine

    International Nuclear Information System (INIS)

    Le, T. D.; Kim, J. H.; Park, S. I.; Kim, D. J.; Kim, H. M.; Lee, H. G.; Yoon, Y. S.; Jo, Y. S.; Yoon, K. Y.

    2014-01-01

    To minimize most heat loss of current lead for high-temperature superconducting (HTS) rotating machine, the choice of conductor properties and lead geometry - such as length, cross section, and cooling surface area - are one of the various significant factors must be selected. Therefore, an optimal lead for large scale of HTS rotating machine has presented before. Not let up with these trends, this paper continues to improve of diminishing heat loss for HTS part according to different model. It also determines the simplification conditions for an evaluation of the main flux flow loss and eddy current loss transient characteristics during charging and discharging period.

  20. Modelling of current-voltage characteristics of infrared photo-detectors based on type – II InAs/GaSb super-lattice diodes with unipolar blocking layers

    Directory of Open Access Journals (Sweden)

    Vishnu Gopal

    2015-09-01

    Full Text Available It is shown that current-voltage characteristics of infrared photo-detectors based on type-II InAs/GaSb super-lattices with uni-polar blocking layers can be modelled similar to a junction diode with a finite series resistance on account of blocking barriers. As an example this paper presents the results of a study of current-voltage characteristics of a type II InAs/GaSb super-lattice diode with PbIbN architecture using a recently proposed [J. Appl. Phys. 116, 084502 (2014] method for modelling of illuminated photovoltaic detectors. The thermal diffusion, generation – recombination (g-r, and ohmic currents are found as principal components besides a component of photocurrent due to background illumination. The experimentally observed reverse bias diode current in excess of thermal current (diffusion + g-r, photo-current and ohmic shunt current is reported to be best described by an exponential function of the type, Iexcess = Ir0 + K1exp(K2 V, where Ir0, K1 and K2 are fitting parameters and V is the applied bias voltage. The present investigations suggest that the exponential growth of excess current with the applied bias voltage may be taking place along the localized regions in the diode. These localized regions are the shunt resistance paths on account of the surface leakage currents and/or defects and dislocations in the base of the diode.

  1. Study of current-voltage characteristics in PbTe(Ga) alloys at low temperatures

    International Nuclear Information System (INIS)

    Akimov, B.A.; Albul, A.V.; Bogdanov, E.V.

    1992-01-01

    Results of determining current-voltage characteristics in PbTe(Ga) monocrystals of n- and p-types of conductivity in strong electric fields E ≤ 2 x 10 3 V/Cm at 4.2-77 K are presented. It was established that at helium and nitrogen temperatures, the current-voltage characteristics of PbTe(Ga) alloys, high-ohmic state of which was realized in helium, differed qualitatively from ones, typical for unalloyed PbTe. The superlinear dependence, observed in the fields, beginning from E ≥ 1 V/cm, is explained in the framework of concepts of strong electric field effect on conductivity of impurity states

  2. Statistical mechanical characteristics of slip-ring induction motors when direct current braking

    Energy Technology Data Exchange (ETDEWEB)

    Kedzior, W; Muchorowski, J; Pienkowski, K

    1980-09-01

    This paper evaluates methods of braking high capacity belt conveyors used in brown coal surface mines in Poland. Complications associated with belt conveyor braking, particularly when a conveyor moves down a slope, are analyzed. A method of calculating mechanical characteristics of wound-rotor induction motors during direct current braking taking into account saturation of magnetic circuit is presented. Characteristics of the SZUr motor with 630 kW power, used in brown coal mining, are also given. Analyses show that motor operation can be efficiently braked in two ways: 1. by changing additional resistance in rotor circuit (e.g. using thyristor controller); 2. by changing intensity of electric current supplied to stator winding (e.g. using a rectifier). (3 refs.) (In Polish)

  3. Effect of Applied Current Density on Cavitation-Erosion Characteristics for Anodized Al Alloy.

    Science.gov (United States)

    Lee, Seung-Jun; Kim, Seong-Jong

    2018-02-01

    Surface finishing is as important as selection of material to achieve durability. Surface finishing is a process to provide surface with the desired performance and features by applying external forces such as thermal energy or stress. This study investigated the optimum supply current density for preventing from cavitation damages by applying to an anodizing technique that artificially forms on the surface an oxide coating that has excellent mechanical characteristics, such as hardness, wear resistance. Result of hardness test, the greater hardness was associated with greater brittleness, resulting in deleterious characteristics. Consequently, under conditions such as the electrolyte concentration of 10 vol.%, the processing time of 40 min, the electrolyte temperature of 10 °C, and the current density of 20 mA/cm2 were considered to be the optimum anodizing conditions for improvement of durability in seawater.

  4. Characteristics of a High Current Helicon Ion Source With High Monatomic Fraction

    International Nuclear Information System (INIS)

    Jung, Hwa-Dong; Chung, Kyoung-Jae; Hwang, Yong-Seok

    2006-01-01

    Applications of neutron need compact and high yield neutron sources as well as very intense neutron sources from giant devices such as accelerators. Ion source based neutron sources using nuclear fusion reactions such as D(d, 3He)n, D(t, 4He)n can meet the requirements. This type of neutron generators can be simply composed of an ion source and a target. High-performance neutron generators with high yield require ion sources with high beam current, high monatomic fraction and long lifetime. Helicon ion source can meet these requirements. To make high current ion source, characteristics of helicon plasma such as high plasma density can be utilized. Moreover, efficient plasma heating with RF power lead high fraction of monatomic ion beam. Here, Characteristics of helicon plasma sources are described. Design and its performances of a helicon ion source are presented

  5. A simple approximation for the current-voltage characteristics of high-power, relativistic diodes

    Energy Technology Data Exchange (ETDEWEB)

    Ekdahl, Carl, E-mail: cekdahl@lanl.gov [Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)

    2016-06-15

    A simple approximation for the current-voltage characteristics of a relativistic electron diode is presented. The approximation is accurate from non-relativistic through relativistic electron energies. Although it is empirically developed, it has many of the fundamental properties of the exact diode solutions. The approximation is simple enough to be remembered and worked on almost any pocket calculator, so it has proven to be quite useful on the laboratory floor.

  6. Hysteresis and negative differential resistance of the current-voltage characteristic of a water bridge

    Science.gov (United States)

    Oshurko, V. B.; Fedorov, A. N.; Ropyanoi, A. A.; Fedosov, M. V.

    2014-06-01

    It is found experimentally that the properties of nanoporous ion-exchange membranes (hysteresis of the current-voltage characteristic in the solution and negative differential resistance), which have been discussed in recent years, are not associated with the properties of the membrane. It is shown that these effects are also observed in a floating water bridge and in water-filled tubes and are apparently determined by the geometrical shape of the liquid conductor. The observed effects are explained qualitatively.

  7. Characteristics of AZO thin films prepared at various Al target input current deposited on PET substrate

    Science.gov (United States)

    Kim, Yun-Hae; Park, Chang-Wook; Lee, Jin-Woo; Lee, Dong Myung

    2015-03-01

    Transparent conductive oxide is a thin film to be used in numerous applications throughout the industry in general. Transparent electrode materials used in these industries are in need of light transmittance with excellent high and low electrical characteristics, substances showing the most excellent physical properties while satisfying all the characteristics such as indium tin oxide film. However, reserves of indium are very small, there is an environmental pollution problem. So the study of zinc oxide (ZnO) is actively carried out in an alternative material. This study analyzed the characteristics by using a direct current (DC) magnetron sputtering system. The electric and optical properties of these films were studied by Hall measurement and optical spectroscopy, respectively. When the Al target input current is 2 mA and 4 mA, it demonstrates about 80% transmittance in the range of the visible spectrum. Also, when Al target input current was 6 mA, sheet resistance was the smallest on PET substrate. The minimum resistivity is 3.96×10-3 ohm/sq.

  8. Supercapacitor performance evaluation in replacing battery based on charging and discharging current characteristics

    Science.gov (United States)

    Sani, A.; Siahaan, S.; Mubarakah, N.; Suherman

    2018-02-01

    Supercapacitor is a new device of energy storage, which has much difference between ordinary capacitors and batteries. Supercapacitor have higher capacitance and energy density than regular capacitors. The supercapacitor also has a fast charging time, as well as a long life. To be used as a battery replacement please note the internal parameters of the battery to be replaced. In this paper conducted a simulation study to utilize supercapacitor as a replacement battery. The internal parameters of the battery and the supercapacitor are obtained based on the characteristics of charging and discharging current using a predefined equivalent circuit model. The battery to be replaced is a 12-volt lead-acid type, 6.5 Ah which is used on motorcycles with 6A charging and discharging currents. Super capacitor replacement capacitor is a capacity of 1600F, 2.7V which is connected in series as many as 6 pieces with 16.2 volt terminal voltage and charging current 12A. To obtain the same supercapacitor characteristic as the battery characteristic to be replaced, modification of its internal parameters is made. The results show that the super-capacitor can replace the battery function for 1000 seconds.

  9. Critical current characteristics and history dependence in superconducting SmFeAsOF bulk

    International Nuclear Information System (INIS)

    Ni, B; Ge, J; Kiuchi, M; Otabe, E S; Gao, Z; Wang, L; Qi, Y; Zhang, X; Ma, Y

    2010-01-01

    The superconducting SmFeAsO 1-x F x (x=0.2) polycrystalline bulks were prepared by the powder-in-tube (PIT) method. The magnetic field and temperature dependences of critical current densities in the samples were investigated by resistive and ac inductive (Campbell's) methods. It was found that a fairly large shielding current density over 10 9 A/m 2 , which is considered to correspond to the local critical current density, flows locally with the perimeter size similar to the average grain size of the bulk samples, while an extremely low transport current density of about 10 5 A/m 2 corresponding to the global critical current density flows through the whole sample. Furthermore, a unique history dependence of global critical current density was observed, i.e., it shows a smaller value in the increasing-field process than that in the decreasing-field process. The history dependence of global critical current characteristic in our case can be ascribed to the existence of the weak-link property between the grains in SmFeAsO 1-x F x bulk.

  10. Containment leakage rate testing requirements

    International Nuclear Information System (INIS)

    Arndt, E.G.

    1992-01-01

    This report presents the status of several documents under revision or development that provide requirements and guidance for testing nuclear power plant containment systems for leakage rates. These documents include the general revision to 10 CFR Part 50, Appendix J; the regulatory guide affiliated with the revision to Appendix J; the national standard that the regulatory guide endorses, ANSI/ANS-56.8, 'Containment System Leakage Rate Testing Requirements'; and the draft industry Licensing Topical Report, 'Standardized Program for Primary Containment Integrity Testing'. The actual or potential relationships between these documents are also explored

  11. Discharge current characteristics as an 'electrical method' for glow discharge plasma diagnosis

    International Nuclear Information System (INIS)

    Toma, M.; Paraschivescu, Alina; Morminches, Anisoara

    2001-01-01

    In its simplest form, the glow discharge can be established by passing an electric current through gas between two electrodes. The gas and the electrodes are contained in an insulating envelope. In many technological applications, and not only, the plasma devices are often treated like a black box. There is a series of external parameters or control variables which can be adjusted to obtain a desired effect, namely, the operating voltage, gas pressure, gas nature, gas flow rate, magnetic field strength and magnetic field configuration, electric field geometry, interelectrode distance, and cathode characteristics. The discharge current can be controlled by each of the above control variables. The core idea of this work is the following: a lot of information about the phenomena from the discharge volume, at electrodes or at the discharge bounding wall surface, can be obtained knowing how the change of one of the control parameters influences the discharge current. The following regimes were analyzed: dark discharges (background ionization, saturation regime, Townsend regime, corona regime), glow discharge (the normal and abnormal discharge) and arc discharge (glow to arc transition, non-thermal arcs, thermal arcs). It was concluded that the nonlinearity in the shape of the discharge current characteristics as a function of an external control parameter, can be correlated with the elementary processes and the dynamics of different space charge structures generated in plasma devices. (authors)

  12. Reverse Current Characteristics of InP Gunn Diodes for W-Band Waveguide Applications.

    Science.gov (United States)

    Kim, Hyun-Seok; Heo, Jun-Woo; Chol, Seok-Gyu; Ko, Dong-Sik; Rhee, Jin-Koo

    2015-07-01

    InP is considered as the most promising material for millimeter-wave laser-diode applications owing to its superior noise performance and wide operating frequency range of 75-110 GHz. In this study, we demonstrate the fabrication of InP Gunn diodes with a current-limiting structure using rapid thermal annealing to modulate the potential height formed between an n-type InP active layer and a cathode contact. We also explore the reverse current characteristics of the InP Gunn diodes. Experimental results indicate a maximum anode current and an oscillation frequency of 200 mA and 93.53 GHz, respectively. The current-voltage characteristics are modeled by considering the Schottky and ohmic contacts, work function variations, negative differential resistance (NDR), and tunneling effect. Although no direct indication of the NDR is observed, the simulation results match the measured data well. The modeling results show that the NDR effect is always present but is masked because of electron emission across the shallow Schottky barrier.

  13. Effect of localized states on the current-voltage characteristics of metal-semiconductor contacts with thin interfacial layer

    Science.gov (United States)

    Chattopadhyay, P.

    1994-10-01

    The role of discrete localized states on the current-voltage characteristics of metal-semiconductor contact is examined. It is seen that, because of these localized states, the logarithmic current vs voltage characteristics become nonlinear. Such nonlinearity is found sensitive to the temperature, and the energy and density of the localized states. The predicted temperature dependence of barrier height and the current-voltage characteristics are in agreement with the experimental results of Aboelfotoh [ Phys. Rev. B39, 5070 (1989)].

  14. Simulation of forward dark current voltage characteristics of tandem solar cells

    International Nuclear Information System (INIS)

    Rubinelli, F.A.

    2012-01-01

    The transport mechanisms tailoring the shape of dark current–voltage characteristics of amorphous and microcrystalline silicon based tandem solar cell structures are explored with numerical simulations. Our input parameters were calibrated by fitting experimental current voltage curves of single and double junction structures measured under dark and illuminated conditions. At low and intermediate forward voltages the dark current–voltage characteristics show one or two regions with a current–voltage exponential dependence. The diode factor is unique in tandem cells with the same material in both intrinsic layers and two dissimilar diode factors are observed in tandem cells with different materials on the top and bottom intrinsic layers. In the exponential regions the current is controlled by recombination through gap states and by free carrier diffusion. At high forward voltages the current grows more slowly with the applied voltage. The current is influenced by the onset of electron space charge limited current (SCLC) in tandem cells where both intrinsic layers are of amorphous silicon and by series resistance of the bottom cell in tandem cells where both intrinsic layers are of microcrystalline silicon. In the micromorph cell the onset of SCLC becomes visible on the amorphous top sub-cell. The dark current also depends on the thermal generation of electron–hole (e–h) pairs present at the tunneling recombination junction. The highest dependence is observed in the tandem structure where both intrinsic layers are of microcrystalline silicon. The prediction of meaningless dark currents at low forward and reverse voltages by our code is discussed and one solution is given. - Highlights: ► Transport mechanisms shaping the dark current-voltage curves of tandem devices. ► The devices are amorphous and microcrystalline based tandem solar cells. ► Two regions with a current-voltage exponential dependence are observed. ► The tandem J-V diode factor is the

  15. Current transport mechanisms in mercury cadmium telluride diode

    Energy Technology Data Exchange (ETDEWEB)

    Gopal, Vishnu, E-mail: vishnu-46@yahoo.com, E-mail: wdhu@mail.sitp.ac.cn [Institute of Defence Scientists and Technologists, CFEES Complex, Brig. S. K. Majumdar Marg, Delhi 110054 (India); Li, Qing; He, Jiale; Hu, Weida, E-mail: vishnu-46@yahoo.com, E-mail: wdhu@mail.sitp.ac.cn [National Lab for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083 (China); He, Kai; Lin, Chun [Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083 (China)

    2016-08-28

    This paper reports the results of modelling of the current-voltage characteristics (I-V) of a planar mid-wave Mercury Cadmium Telluride photodiode in a gate controlled diode experiment. It is reported that the diode exhibits nearly ideal I-V characteristics under the optimum surface potential leading to the minimal surface leakage current. Deviations from the optimum surface potential lead to non ideal I–V characteristics, indicating a strong relationship between the ideality factor of the diode with its surface leakage current. Diode's I–V characteristics have been modelled over a range of gate voltages from −9 V to −2 V. This range of gate voltages includes accumulation, flat band, and depletion and inversion conditions below the gate structure of the diode. It is shown that the I–V characteristics of the diode can be very well described by (i) thermal diffusion current, (ii) ohmic shunt current, (iii) photo-current due to background illumination, and (iv) excess current that grows by the process of avalanche multiplication in the gate voltage range from −3 V to −5 V that corresponds to the optimum surface potential. Outside the optimum gate voltage range, the origin of the excess current of the diode is associated with its high surface leakage currents. It is reported that the ohmic shunt current model applies to small surface leakage currents. The higher surface leakage currents exhibit a nonlinear shunt behaviour. It is also shown that the observed zero-bias dynamic resistance of the diode over the entire gate voltage range is the sum of ohmic shunt resistance and estimated zero-bias dynamic resistance of the diode from its thermal saturation current.

  16. Valve leakage inspection testing and maintenance process

    International Nuclear Information System (INIS)

    Aikin, J.A.; Reinwald, J.W.; Kittmer, C.A.

    1991-01-01

    In valve maintenance, packing rings that prevent leakage along the valve stem must periodically be replaced, either during routine maintenance or to correct a leak or valve malfunction. Tools and procedures currently in use for valve packing removal and inspection are generally of limited value due to various access and application problems. A process has been developed by AECL Research that addresses these problems. The process, using incompressible fluid pressure, quickly and efficiently confirms the integrity of the valve backseat, extracts hard-to-remove valve packing sets, and verifies the leak tightness of the repacked valve

  17. Excessive leakage measurement using pressure decay method in containment building local leakage rate test at nuclear power plant

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Won Kyu; Kim, Chang Soo; Kim, Wang Bae [KHNP, Central Research Institute, Daejeon (Korea, Republic of)

    2016-06-15

    There are two methods for conducting the containment local leakage rate test (LLRT) in nuclear power plants: the make-up flow rate method and the pressure decay method. The make-up flow rate method is applied first in most power plants. In this method, the leakage rate is measured by checking the flow rate of the make-up flow. However, when it is difficult to maintain the test pressure because of excessive leakage, the pressure decay method can be used as a complementary method, as the leakage rates at pressures lower than normal can be measured using this method. We studied the method of measuring over leakage using the pressure decay method for conducting the LLRT for the containment building at a nuclear power plant. We performed experiments under conditions similar to those during an LLRT conducted on-site. We measured the characteristics of the leakage rate under varies pressure decay conditions, and calculated the compensation ratio based on these data.

  18. Detection of gas leakage

    Science.gov (United States)

    Thornberg, Steven M; Brown, Jason

    2015-02-17

    A method of detecting leaks and measuring volumes as well as a device, the Power-free Pump Module (PPM), provides a self-contained leak test and volume measurement apparatus that requires no external sources of electrical power during leak testing or volume measurement. The PPM is a portable, pneumatically-controlled instrument capable of generating a vacuum, calibrating volumes, and performing quantitative leak tests on a closed test system or device, all without the use of alternating current (AC) power. Capabilities include the ability is to provide a modest vacuum (less than 10 Torr) using a venturi pump, perform a pressure rise leak test, measure the gas's absolute pressure, and perform volume measurements. All operations are performed through a simple rotary control valve which controls pneumatically-operated manifold valves.

  19. Detection of gas leakage

    Science.gov (United States)

    Thornberg, Steven [Peralta, NM; Brown, Jason [Albuquerque, NM

    2012-06-19

    A method of detecting leaks and measuring volumes as well as an apparatus, the Power-free Pump Module (PPM), that is a self-contained leak test and volume measurement apparatus that requires no external sources of electrical power during leak testing or volume measurement, where the invention is a portable, pneumatically-controlled instrument capable of generating a vacuum, calibrating volumes, and performing quantitative leak tests on a closed test system or device, all without the use of alternating current (AC) power. Capabilities include the ability is to provide a modest vacuum (less than 10 Torr), perform a pressure rise leak test, measure the gas's absolute pressure, and perform volume measurements. All operations are performed through a simple rotary control valve which controls pneumatically-operated manifold valves.

  20. Hysteretic current-voltage characteristics in RF-sputtered nanocrystalline TiO2 thin films

    International Nuclear Information System (INIS)

    Villafuerte, Manuel; Juarez, Gabriel; Heluani, Silvia P. de; Comedi, David

    2007-01-01

    We have measured the current-voltage characteristics at room temperature of a nanocrystalline TiO 2 thin film fabricated by reactive RF-sputtering deposition and sandwiched between ITO (indium-tin-oxide)-buffered glass substrate and an indium top electrode. The I-V characteristics are ohmic for low voltages and become non-linear, hysteretic and asymmetric as the voltage is increased. The system is shown to be well represented by two distinct resistance states in the non-ohmic region. Current transient evolutions were also measured for constant voltage excitations. The resistance is stable in time for voltages in the ohmic regime. In contrast, for voltages in the non-ohmic regime, the resistance has a small variation for a short period of time (order of tens seconds) and then increases with time. For those transients, long characteristic times (on the order of tens of minutes up to hours) were found. The behavior of the system is discussed on the basis of experimental results reported in the literature for similar systems and existing models for electric-field induced resistive switching

  1. Practical Leakage-Resilient Symmetric Cryptography

    DEFF Research Database (Denmark)

    Faust, Sebastian; Pietrzak, Krzysztof; Schipper, Joachim

    2012-01-01

    Leakage resilient cryptography attempts to incorporate side-channel leakage into the black-box security model and designs cryptographic schemes that are provably secure within it. Informally, a scheme is leakage-resilient if it remains secure even if an adversary learns a bounded amount of arbitr......Leakage resilient cryptography attempts to incorporate side-channel leakage into the black-box security model and designs cryptographic schemes that are provably secure within it. Informally, a scheme is leakage-resilient if it remains secure even if an adversary learns a bounded amount...

  2. Possible influence of the voltage dependence of the Josephson tunneling current I(V,psi) on the corresponding current-voltage characteristic

    International Nuclear Information System (INIS)

    Hahlbohm, H.D.; Luebbig, H.; Luther, H.

    1975-01-01

    Analog computer calculations of the current-voltage characteristic involving the voltage dependence of the amplitudes of the tunneling current equation explicitly, for the case of a current driven tunneling junction at different temperatures are reported on. These studies are based upon the adiabatic representation of the current-phase relation. The influence of retarding effects is not included. Therefore the computational results can lead to practical consequences at best in the range near the transition temperature. (Auth.)

  3. Current-voltage characteristic of a Josephson junction with randomly distributed Abrikosov vortices

    International Nuclear Information System (INIS)

    Fistul, M.V.; Giuliani, G.F.

    1997-01-01

    We have developed a theory of the current-voltage characteristic of a Josephson junction in the presence of randomly distributed, pinned misaligned Abrikosov vortices oriented perpendicularly to the junction plane. Under these conditions the Josephson phase difference var-phi acquires an interesting stochastic dependence on the position in the plane of the junction. In this situation it is possible to define an average critical current which is determined by the spatial correlations of this function. Due to the inhomogeneity, we find that for finite voltage bias the electromagnetic waves propagating in the junction display a broad spectrum of wavelengths. This is at variance with the situation encountered in homogeneous junctions. The amplitude of these modes is found to decrease as the bias is increased. We predict that the presence of these excitations is directly related to a remarkable feature in the current-voltage characteristic. The dependence of the position and the magnitude of this feature on the vortex concentration has been determined. copyright 1997 The American Physical Society

  4. Plasma characteristics in the discharge region of a 20 A emission current hollow cathode

    Science.gov (United States)

    Mingming, SUN; Tianping, ZHANG; Xiaodong, WEN; Weilong, GUO; Jiayao, SONG

    2018-02-01

    Numerical calculation and fluid simulation methods were used to obtain the plasma characteristics in the discharge region of the LIPS-300 ion thruster’s 20 A emission current hollow cathode and to verify the structural design of the emitter. The results of the two methods indicated that the highest plasma density and electron temperature, which improved significantly in the orifice region, were located in the discharge region of the hollow cathode. The magnitude of plasma density was about 1021 m-3 in the emitter and orifice regions, as obtained by numerical calculations, but decreased exponentially in the plume region with the distance from the orifice exit. Meanwhile, compared to the emitter region, the electron temperature and current improved by about 36% in the orifice region. The hollow cathode performance test results were in good agreement with the numerical calculation results, which proved that that the structural design of the emitter and the orifice met the requirements of a 20 A emission current. The numerical calculation method can be used to estimate plasma characteristics in the preliminary design stage of hollow cathodes.

  5. Effect of cathode and anode plasma motion on current characteristics of pinch diode

    International Nuclear Information System (INIS)

    Yang Hailiang; Qiu Aici; Sun Jianfeng; Li Jingya; He Xiaoping; Tang Junping; Li Hongyu; Wang Haiyang; Huang Jianjun; Ren Shuqing; Yang Li; Zou Lili

    2005-01-01

    The preliminary research results for the effect of cathode and anode plasma motion on current characteristics of the pinch ion diode on FLASH II accelerator are reported. The structure and principle of pinch reflex ion beam diode are introduced. The time dependent evolution of electron and ion flow in large aspect-ratio relativistic diodes is studied by analytic models. The equation of Child-langmuir, weak focused-flow, strong focused-flow and parapotential flow are corrected to reduce the diode A-C gap caused by the motion of cathode and anode plasma. The diode current and ion current are calculated with these corrected equations, and the results are consistent with the experimental data. The methods of increasing ion current and efficiency are also presented. The high power ion beam peak current about 160 kA with a peak energy about 500 keV was produced using water-dielectric transmission-line generators with super-pinch reflex ion diodes on FLASH II accelerator at Northwest Institute of Nuclear Technology (NINT). (authors)

  6. Observation of dark pulses in 10 nm thick YBCO nanostrips presenting hysteretic current voltage characteristics

    Science.gov (United States)

    Ejrnaes, M.; Parlato, L.; Arpaia, R.; Bauch, T.; Lombardi, F.; Cristiano, R.; Tafuri, F.; Pepe, G. P.

    2017-12-01

    We have fabricated several 10 nm thick and 65 nm wide YBa2Cu3O7-δ (YBCO) nanostrips. The nanostrips with the highest critical current densities are characterized by hysteretic current voltage characteristics (IVCs) with a direct bistable switch from the zero-voltage to the finite voltage state. The presence of hysteretic IVCs allowed the observation of dark pulses due to fluctuations phenomena. The key role of the bistable behavior is its ability to transform a small disturbance (e.g. an intrinsic fluctuation) into a measurable transient signal, i.e. a dark pulse. On the contrary, in devices characterized by lower critical current density values, the IVCs are non-hysteretic and dark pulses have not been observed. To investigate the physical origin of the dark pulses, we have measured the bias current dependence of the dark pulse rate: the observed exponential increase with the bias current is compatible with mechanisms based on thermal activation of magnetic vortices in the nanostrip. We believe that the successful amplification of small fluctuation events into measurable signals in nanostrips of ultrathin YBCO is a milestone for further investigation of YBCO nanostrips for superconducting nanostrip single photon detectors and other quantum detectors for operation at higher temperatures.

  7. Emission characteristics in solution-processed asymmetric white alternating current field-induced polymer electroluminescent devices

    Science.gov (United States)

    Chen, Yonghua; Xia, Yingdong; Smith, Gregory M.; Gu, Yu; Yang, Chuluo; Carroll, David L.

    2013-01-01

    In this work, the emission characteristics of a blue fluorophor poly(9, 9-dioctylfluorene) (PFO) combined with a red emitting dye: Bis(2-methyl-dibenzo[f,h]quinoxaline)(acetylacetonate)iridium (III) [Ir(MDQ)2(acac)], are examined in two different asymmetric white alternating current field-induced polymer electroluminescent (FIPEL) device structures. The first is a top-contact device in which the triplet transfer is observed resulting in the concentration-dependence of the emission similar to the standard organic light-emitting diode (OLED) structure. The second is a bottom-contact device which, however, exhibits concentration-independence of emission. Specifically, both dye emission and polymer emission are found for the concentrations as high as 10% by weight of the dye in the emitter. We attribute this to the significant different carrier injection characteristics of the two FIPEL devices. Our results suggest a simple and easy way to realize high-quality white emission.

  8. AC over-current characteristics of YBCO coated conductor with copper stabilizer layer considering insulation layer

    International Nuclear Information System (INIS)

    Du, H.-I.; Kim, M.-J.; Kim, Y.-J.; Lee, D.-H.; Han, B.-S.; Song, S.-S.

    2010-01-01

    Compared with the first-generation BSCCO wire, the YBCO thin-film wire boasts low material costs and high J c and superior magnetic-field properties, among other strengths. Meanwhile, the previous BSCCO wire material for superconducting cables has been researched on considerably with regard to its post-wire quenching characteristics during the application of an alternating over-current. In this regard, the promising YBCO thin-film wire has yet to be further researched on. Moreover, still lacking is research on the YBCO thin-film wire with insulating layers, which is essential in the manufacture of superconducting cables, along with the testing of the application of an alternating over-current to the wire. In this study, YBCO thin-film wires with copper-stabilizing layers were used in testing alternating over-current application according to the presence or absence of insulating layers and to the thickness of such layers, to examine the post-quenching wire resistance increase and quenching trends. The YBCO thin-film wire with copper-stabilizing layers has a critical temperature of 90 K and a critical current of 85 A rms . Moreover, its current application cycle is 5.5 cycles, and its applied currents are 354, 517, 712, and 915 A peak . These figures enabled the YBCO thin-film wires with copper-stabilizing layers to reach 90, 180, 250, and 300 K, respectively, in this study. These temperatures serve as a relative reference to examine the post-quenching wire properties following the application of an alternating over-current.

  9. Calculation of current-voltage characteristics of electron-capture detectors

    International Nuclear Information System (INIS)

    Hinneburg, D.; Grosse, H.J.; Leonhardt, J.; Popp, P.

    1983-01-01

    Starting from the law of conservation of charge a stationary one-dimensional non-linear differential equation system is derived, which is applied to the direct-current mode of an electron-capture detector with parallel electrode plates. The theory takes into account space-charge, recombination, and inhomogeneous ionization and it deals with three kinds of charge carriers with different mobilities (positive and negative ions, electrons). Terms due to diffusion and gas-flow losses are excluded. The equations so constructed were programmed to get a means of calculating the charge and field distributions and the current-voltage characteristics as functions of various parameters of the detectors, the attaching gas and the ionization. For two cases the results are given. (author)

  10. Auroral streamers: characteristics of associated precipitation,convection and field-aligned currents

    Directory of Open Access Journals (Sweden)

    V. A. Sergeev

    2004-01-01

    Full Text Available During the long-duration steady convection activity on 11 December 1998, the development of a few dozen auroral streamers was monitored by Polar UVI instrument in the dark northern nightside ionosphere. On many occasions the DMSP spacecraft crossed the streamer-conjugate regions over the sunlit southern auroral oval, permitting the investigation of the characteristics of ion and electron precipitation, ionospheric convection and field-aligned currents associated with the streamers. We confirm the conjugacy of streamer-associated precipitation, as well as their association with ionospheric plasma streams having a substantial equatorward convection component. The observations display two basic types of streamer-associated precipitation. In its polewardmost half, the streamer-associated (field-aligned accelerated electron precipitation coincides with the strong (≥2–7μA/m2 upward field-aligned currents on the westward flank of the convection stream, sometimes accompanied by enhanced proton precipitation in the adjacent region. In the equatorward portion of the streamer, the enhanced precipitation includes both electrons and protons, often without indication of field-aligned acceleration. Most of these characteristics are consistent with the model describing the generation of the streamer by the narrow plasma bubbles (bursty bulk flows which are contained on dipolarized field lines in the plasma sheet, although the mapping is strongly distorted which makes it difficult to quantitatively interprete the ionospheric image. The convective streams in the ionosphere, when well-resolved, had the maximal convection speeds ∼0.5–1km/s, total field-aligned currents of a few tenths of MA, thicknesses of a few hundreds km and a potential drop of a few kV across the stream. However, this might represent only a small part of the associated flux transport in the equatorial plasma sheet.

    Key words. Ionosphere (electric fiels and

  11. Automation of unit for leakage test

    OpenAIRE

    LYCHKOVSKAYA V.S.; TSYGANKOV A.S.; GRINBERG G.M.; STANOVOVA O.A.

    2015-01-01

    Federal state educational standard requirements for training of university students have been considered. Leakage test procedures for components of aerospace vehicles have been described. Automation procedures of existing laboratory leakage test units have been outlined.

  12. A study on characteristic of glass dosimeter according to grade change of tube current

    Energy Technology Data Exchange (ETDEWEB)

    Son, Jin Hyun; Kim, Seong Ho; Mun, Hyun Jun; Kim, Lyun Kyun; Son, In Hwa; Kim, Young Jun; Min, Jung Whan [Dept. of Radiological Science, Shingu University, Sungnam (Korea, Republic of); Kim, Ki Won [Dept. of Radiology, Samsung Medical Center, Seoul (Korea, Republic of)

    2014-06-15

    This study was evaluated the linearity and reproducibility according to dose, and reproducibility according to delay time by changing tube current amount (5 mAs, 10 mAs, 16 mAs, 20 mAs, 25 mAs, 32 mAs respectively, which are low energy radiations) using Glass Dosimeter (GD) and piranha semiconductor dosimeter which are used for measuring exposure dose. Measurements of radiation dose were performed using external detector of piranha 657 which is multi-function QA device (RTI Electronic, Sweden). Conditions of measurement were 80 kVp, SSD 100 and exposure region is 10 cm x 10 cm. Glass dosimeter was exposed to radiation. Twenty-four glass dosimeters were divided into six groups (5 mAs, 10 mAs, 16 mAs, 20 mAs, 25 mAs, 32 mAs respectively), then measured. This study was resulted by measuring the linearity and reproducibility according to change of tube current in low energy field. In dose characteristic of GD, this study could be useful as previous study with regard to dose characteristic according to change of tube voltage in low energy field.

  13. Tunneling Characteristics Depending on Schottky Barriers and Diffusion Current in SiOC.

    Science.gov (United States)

    Oh, Teresa; Kim, Chy Hyung

    2016-02-01

    To obtain a diffusion current in SiOC, the aluminum doped zinc oxide films were deposited on SiOC/Si wafer by a RF magnetron sputtering. All the X-ray patterns of the SiOC films showed amorphous phases. The level of binding energy of Si atoms will lead to an additional potential modulation by long range Coulombic and covalent interactions with oxygen ions. The growth of the AZO film was affected by the characteristics of SiOC, resulting in similar trends in XPS spectra and a shift to higher AZO lattice d values than the original AZO d values in XRD analyses. The charges trapped by the defects at the interlayer between AZO and SiOC films induced the decreased mobility of carriers. In the absence of trap charges, AZO grown on SiOC film such as the sample prepared at O2 = 25 or 30 sccm, which has low charge carrier concentration and high mobility, showed high mobility in an ambipolar characteristic of oxide semiconductor due to the tunneling effect and diffusion current. The structural matching of an interface between AZO and amorphous SiOC enhanced the height of Schottky Barrier (SB), and then the mobility was increased by the tunneling effect from band to band through the high SB.

  14. Current-voltage temperature characteristics of Au/n-Ge (1 0 0) Schottky diodes

    Energy Technology Data Exchange (ETDEWEB)

    Chawanda, Albert, E-mail: albert.chawanda@up.ac.za [Midlands State University, Bag 9055 Gweru (Zimbabwe); University of Pretoria, 0002 Pretoria (South Africa); Mtangi, Wilbert; Auret, Francois D; Nel, Jacqueline [University of Pretoria, 0002 Pretoria (South Africa); Nyamhere, Cloud [Nelson Mandela Metropolitan University, Port Elizabeth (South Africa); Diale, Mmantsae [University of Pretoria, 0002 Pretoria (South Africa)

    2012-05-15

    The variation in electrical characteristics of Au/n-Ge (1 0 0) Schottky contacts have been systematically investigated as a function of temperature using current-voltage (I-V) measurements in the temperature range 140-300 K. The I-V characteristics of the diodes indicate very strong temperature dependence. While the ideality factor n decreases, the zero-bias Schottky barrier height (SBH) ({Phi}{sub B}) increases with the increasing temperature. The I-V characteristics are analyzed using the thermionic emission (TE) model and the assumption of a Gaussian distribution of the barrier heights due to barrier inhomogeneities at the metal-semiconductor interface. The zero-bias barrier height {Phi}{sub B} vs. 1/2 kT plot has been used to show the evidence of a Gaussian distribution of barrier heights and values of {Phi}{sub B}=0.615 eV and standard deviation {sigma}{sub s0}=0.0858 eV for the mean barrier height and zero-bias standard deviation have been obtained from this plot, respectively. The Richardson constant and the mean barrier height from the modified Richardson plot were obtained as 1.37 A cm{sup -2} K{sup -2} and 0.639 eV, respectively. This Richardson constant is much smaller than the reported of 50 A cm{sup -2} K{sup -2}. This may be due to greater inhomogeneities at the interface.

  15. A Comprehensive Analysis of Multiscale Field-Aligned Currents: Characteristics, Controlling Parameters, and Relationships

    Science.gov (United States)

    McGranaghan, Ryan M.; Mannucci, Anthony J.; Forsyth, Colin

    2017-12-01

    We explore the characteristics, controlling parameters, and relationships of multiscale field-aligned currents (FACs) using a rigorous, comprehensive, and cross-platform analysis. Our unique approach combines FAC data from the Swarm satellites and the Advanced Magnetosphere and Planetary Electrodynamics Response Experiment (AMPERE) to create a database of small-scale (˜10-150 km, 250 km) FACs. We examine these data for the repeatable behavior of FACs across scales (i.e., the characteristics), the dependence on the interplanetary magnetic field orientation, and the degree to which each scale "departs" from nominal large-scale specification. We retrieve new information by utilizing magnetic latitude and local time dependence, correlation analyses, and quantification of the departure of smaller from larger scales. We find that (1) FACs characteristics and dependence on controlling parameters do not map between scales in a straight forward manner, (2) relationships between FAC scales exhibit local time dependence, and (3) the dayside high-latitude region is characterized by remarkably distinct FAC behavior when analyzed at different scales, and the locations of distinction correspond to "anomalous" ionosphere-thermosphere behavior. Comparing with nominal large-scale FACs, we find that differences are characterized by a horseshoe shape, maximizing across dayside local times, and that difference magnitudes increase when smaller-scale observed FACs are considered. We suggest that both new physics and increased resolution of models are required to address the multiscale complexities. We include a summary table of our findings to provide a quick reference for differences between multiscale FACs.

  16. Issues behind Competitiveness and Carbon Leakage

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2008-07-01

    This report explores the vulnerability of heavy industry to carbon leakage and competitiveness loss. It reviews the existing literature on competitiveness and carbon leakage under uneven climate policies. It also suggests a statistical method to track carbon leakage, and applies this methodology to Phase I of the EU emissions trading scheme, for various industrial activities: iron and steel, cement, aluminium and refineries. Finally, it reviews measures to mitigate carbon leakage, as discussed in Australia, Canada, Europe, New Zealand and the US.

  17. Subsea Hydraulic Leakage Detection and Diagnosis

    OpenAIRE

    Stavenes, Thomas

    2010-01-01

    The motivation for this thesis is reduction of hydraulic emissions, minimizing of process emergency shutdowns, exploitation of intervention capacity, and reduction of costs. Today, monitoring of hydraulic leakages is scarce and the main way to detect leakage is the constant need for filling of hydraulic fluid to the Hydraulic Power Unit (HPU). Leakage detection and diagnosis has potential, which would be adressed in this thesis. A strategy towards leakage detection and diagnosis is given....

  18. Simulation of leakage through mechanical sealing device

    Science.gov (United States)

    Tikhomorov, V. P.; Gorlenko, O. A.; Izmerov, M. A.

    2018-03-01

    The procedure of mathematical modeling of leakage through the mechanical seal taking into account waviness and roughness is considered. The percolation process is represented as the sum of leakages through a gap between wavy surfaces and percolation through gaps formed by fractal roughness, i.e. the total leakage is determined by the slot model and filtration leakage. Dependences of leaks on the contact pressure of corrugated and rough surfaces of the mechanical seal elements are presented.

  19. Current-voltage characteristics of the semiconductor nanowires under the metal-semiconductor-metal structure

    Science.gov (United States)

    Wen, Jing; Zhang, Xitian; Gao, Hong; Wang, Mingjiao

    2013-12-01

    We present a method to calculate the I-V characteristics of semiconductor nanowires under the metal-semiconductor-metal (MSM) structure. The carrier concentration as an important parameter is introduced into the expression of the current. The subband structure of the nanowire has been considered for associating it with the position of the Fermi level and circumventing the uncertainties of the contact areas in the contacts. The tunneling and thermionic emission currents in the two Schottky barriers at the two metal-semiconductor contacts are discussed. We find that the two barriers have different influences on the I-V characteristics of the MSM structure, one of which under the forward bias plays the role of threshold voltage if its barrier height is large and the applied voltage is small, and the other under the reverse bias controls the shapes of I-V curves. Our calculations show that the shapes of the I-V curves for the MSM structure are mainly determined by the barrier heights of the contacts and the carrier concentration. The nearly identical I-V characteristics can be obtained by using different values of the barrier heights and carrier concentration, which means that the contact type conversion can be ascribed not only to the changes of the barrier heights but also that of the carrier concentration. We also discuss the mechanisms of the ohmic-Schottky conversions and clarify the ambiguity in the literature. The possibility about the variation of the carrier concentration under the applied fields has been confirmed by experimental results.

  20. Heat exchanger leakage problem location

    Directory of Open Access Journals (Sweden)

    Jícha Miroslav

    2012-04-01

    Full Text Available Recent compact heat exchangers are very often assembled from numerous parts joined together to separate heat transfer fluids and to form the required heat exchanger arrangement. Therefore, the leak tightness is very important property of the compact heat exchangers. Although, the compact heat exchangers have been produced for many years, there are still technological problems associated with manufacturing of the ideal connection between the individual parts, mainly encountered with special purpose heat exchangers, e.g. gas turbine recuperators. This paper describes a procedure used to identify the leakage location inside the prime surface gas turbine recuperator. For this purpose, an analytical model of the leaky gas turbine recuperator was created to assess its performance. The results obtained are compared with the experimental data which were acquired during the recuperator thermal performance analysis. The differences between these two data sets are used to indicate possible leakage areas.

  1. The Sidebands of the Equatorial Electrojet: General Characteristic of the Westward Currents, as Deduced From CHAMP

    Science.gov (United States)

    Zhou, Yun-Liang; Lühr, Hermann; Alken, Patrick

    2018-02-01

    Based on 5 years (2001-2005) of magnetic field measurements made by the CHAMP satellite, latitudinal profiles of the equatorial electrojet (EEJ) have been derived. This study provides a comprehensive characterization of the reverse current EEJ sidebands. These westward currents peak at ±5° quasi-dipole latitude with typical amplitudes of 35% of the main EEJ. The diurnal amplitude variation is quite comparable with that of the EEJ. Similarly to the EEJ, the intensity is increasing with solar EUV flux, but with a steeper slope, indicating that not only the conductivity plays a role. For the longitude distribution we find, in general, larger amplitudes in the Western than in the Eastern Hemisphere. It is presently a common understanding that the reverse current EEJ sidebands are generated by eastward zonal winds at altitudes above about 120 km. In particular, a positive vertical gradient of wind speed generates westward currents at magnetic latitudes outside of 2° dip latitude. Interesting information about these features can be deduced from the sidebands' tidal characteristics. The longitudinal variation of the amplitude is dominated by a wave-1 pattern, which can primarily be attributed to the tidal components SPW1 and SW3. In case of the hemispheric amplitude differences these same two wave-1 components dominate. The ratio between sideband amplitude and main EEJ is largely controlled by the tidal features of the EEJ. The longitudinal patterns of the latitude, where the sidebands peak, resemble to some extent those of the amplitude. Current densities become larger when the peaks move closer to the magnetic equator.

  2. [Bile leakage after liver resection: A retrospective cohort study].

    Science.gov (United States)

    Menclová, K; Bělina, F; Pudil, J; Langer, D; Ryska, M

    2015-12-01

    Many previous reports have focused on bile leakage after liver resection. Despite the improvements in surgical techniques and perioperative care the incidence of this complication rather keeps increasing. A number of predictive factors have been analyzed. There is still no consensus regarding their influence on the formation of bile leakage. The objective of our analysis was to evaluate the incidence of bile leakage, its impact on mortality and duration of hospitalization at our department. At the same time, we conducted an analysis of known predictive factors. The authors present a retrospective review of the set of 146 patients who underwent liver resection at the Department of Surgery of the 2nd Faculty of Medicine of the Charles University and Central Military Hospital Prague, performed between 20102013. We used the current ISGLS (International Study Group of Liver Surgery) classification to evaluate the bile leakage. The severity of this complication was determined according to the Clavien-Dindo classification system. Statistical significance of the predictive factors was determined using Fishers exact test and Students t-test. The incidence of bile leakage was 21%. According to ISGLS classification the A, B, and C rates were 6.5%, 61.2%, and 32.3%, respectively. The severity of bile leakage according to the Clavien-Dindo classification system - I-II, IIIa, IIIb, IV and V rates were 19.3%, 42%, 9.7%, 9.7%, and 19.3%, respectively. We determined the following predictive factors as statistically significant: surgery for malignancy (pBile leakage significantly prolonged hospitalization time (pbile leakage the perioperative mortality was 23 times higher (pBile leakage is one of the most serious complications of liver surgery. Most of the risk factors are not easily controllable and there is no clear consensus on their influence. Intraoperative leak tests could probably reduce the incidence of bile leakage. In the future, further studies will be required to improve

  3. Characteristics of the Current-Controlled Phase Transition of VO2 Microwires for Hybrid Optoelectronic Devices

    Directory of Open Access Journals (Sweden)

    Arash Joushaghani

    2015-08-01

    Full Text Available The optical and electrical characteristics of the insulator-metal phase transition of vanadium dioxide (VO2 enable the realization of power-efficient, miniaturized hybrid optoelectronic devices. This work studies the current-controlled, two-step insulator-metal phase transition of VO2 in varying microwire geometries. Geometry-dependent scaling trends extracted from current-voltage measurements show that the first step induced by carrier injection is delocalized over the microwire, while the second, thermally-induced step is localized to a filament about 1 to 2 μm wide for 100 nm-thick sputtered VO2 films on SiO2. These effects are confirmed by direct infrared imaging, which also measures the change in optical absorption in the two steps. The difference between the threshold currents of the two steps increases as the microwires are narrowed. Micron- and sub-micron-wide VO2 structures can be used to separate the two phase transition steps in photonic and electronic devices.

  4. Ab initio and empirical studies on the asymmetry of molecular current-voltage characteristics

    International Nuclear Information System (INIS)

    Hoft, R C; Armstrong, N; Ford, M J; Cortie, M B

    2007-01-01

    We perform theoretical calculations of the tunnelling current through various small organic molecules sandwiched between gold electrodes by using both a tunnel barrier model and an ab initio transport code. The height of the tunnelling barrier is taken to be the work function of gold as modified by the adsorbed molecule and calculated from an ab initio electronic structure code. The current-voltage characteristics of these molecules are compared. Asymmetry is introduced into the system in two ways: an asymmetric molecule and a gap between the molecule and the right electrode. The latter is a realistic situation in scanning probe experiments. The asymmetry is also realized in the tunnel barrier model by two distinct work functions on the left and right electrodes. Significant asymmetry is observed in the ab initio i(V) curves. The tunnel barrier i(V) curves show much less pronounced asymmetry. The relative sizes of the currents through the molecules are compared. In addition, the performance of the WKB approximation is compared to the results obtained from the exact Schroedinger solution to the tunnelling barrier problem

  5. Current-voltage characteristics of a superconducting slab under a superimposed small AC magnetic field

    International Nuclear Information System (INIS)

    Matsushita, Teruo; Yamafuji, Kaoru; Sakamoto, Nobuyoshi.

    1977-01-01

    In case of applying superconductors to electric machinery or high intensity field magnets for fusion reactors, the superconductors are generally expected to be sensible to small field fluctuation besides DC magnetic field. The behavior of superconductors in DC magnetic field superimposed with small AC magnetic field has been investigated often experimentally, and the result has been obtained that the critical current at which DC flow voltage begins to appear extremely decreased or disappeared. Some theoretical investigations have been carried out on this phenomenon so far, however, their application has been limited to the region where frequency is sufficiently low or which is close to the critical magnetic field. Purpose of this report is to deal with the phenomenon in more unified way by analyzing the behavior of magnetic flux lines in a superconductor under a superimposed small AC field using the criticalstate model including viscous force. In order to solve the fundamental equation in this report, first the solution has been obtained in the quasi-static state neglecting viscous force, then about the cases that current density J is not more than Jc and J is larger than Jc, concerning the deviation from the quasi-static limit by employing successive approximation. Current-voltage characteristics have been determined by utilizing the above results. This method seems to be most promising at present except the case of extremely high frequency. (Wakatsuki, Y.)

  6. Leakage of pressurized gases through unlined concrete containment structures

    International Nuclear Information System (INIS)

    Rizkalla, S.H.; Simmonds, S.H.

    1983-01-01

    Eight reinforced concrete specimens were fabricated and subjected to tensile membrane forces and air pressure to study the air leakage characteristics in cracked reinforced concrete members. A mathematical expression for the rate of pressurized air flowing through an idealized crack is presented. The mathematical expression is refined by using the experimental data to describe the air flow rate through any given crack pattern. Graphical charts are also presented for the calculation of the air leakage rate through concrete cracks. The concept of equivalent crack width for a given crack pattern is introduced. The mathematical expression and graphical charts are modified to include this equivalent crack width concept. The proposed technique is applicable for the prediction of the leakage from concrete containment structures or any similar structures due to high internal pressure sufficient to initiate cracking. (orig.)

  7. Characteristics of the cold-water belt formed off Soya Warm Current

    Science.gov (United States)

    Ishizu, Miho; Kitade, Yujiro; Matsuyama, Masaji

    2008-12-01

    We examined the data obtained by acoustic Doppler current profiler, conductivity-temperature-depth profiler, and expendable bathythermograph observations, which were collected in the summers of 2000, 2001, and 2002, to clarify the characteristics of the cold-water belt (CWB), i.e., lower-temperature water than the surrounding water extending from the southwest coast of Sakhalin along the offshore side of Soya Warm Current (SWC) and to confirm one of the formation mechanisms of the CWB as suggested by our previous study, i.e., the upwelling due to the convergence of bottom Ekman transport off the SWC region. The CWB was observed at about 30 km off the coast, having a thickness of 14 m and a minimum temperature of 12°C at the sea surface. The CWB does not have the specific water mass, but is constituted of three representative water types off the northeast coast of Hokkaido in summer, i.e., SWC water, Fresh Surface Okhotsk Sea Water, and Okhotsk Sea Intermediate Water. In a comparison of the horizontal distributions of current and temperature, the CWB region is found to be advected to the southeast at an average of 40 ± 29% of the maximum current velocity of the SWC. The pumping speed due to the convergence of the bottom Ekman transport is estimated as (1.5-3.0) × 10-4 m s-1. We examined the mixing ratio of the CWB, and the results implied that the water mass of the CWB is advected southeastward and mixes with a water mass upwelling in a different region off SWC.

  8. Nonlinear current-voltage characteristics of WO3-x nano-/micro-rods

    Science.gov (United States)

    Shen, Zhenguang; Peng, Zhijian; Zhao, Zengying; Fu, Xiuli

    2018-04-01

    A series of crystalline tungsten oxide nano-/micro-rods with different compositions of WO3, WO2.90, W19O55 (WO2.89) and W18O49 (WO2.72) but identical morphology feature were first prepared. Then, various nanoscaled electrical devices were fabricated from them by micro-fabrication through a focused ion beam technique. Interestingly, the devices from the oxygen-deficient WO3-x display significantly nonlinear current-voltage characteristics. The calculated nonlinear coefficients of the WO2.90, WO2.83, and WO2.72 varistors are 2.52, 3.32 and 4.91, respectively. The breakdown voltage of the WO2.90, WO2.83, and WO2.72 varistors are 1.93, 1.28 and 0.93 V, respectively. Such WO3-x nano-varistors might be promising for low-voltage electrical/electronic devices.

  9. Autowaves in an active two-wire line with exponential current-voltage characteristics

    International Nuclear Information System (INIS)

    Zhuravlev, V. M.

    2006-01-01

    Nonlinear wave processes in two-wire lines containing an active element with an exponential current-voltage characteristic (CVC) similar to that of a p-n junction are investigated. These lines are models of systems that are encountered in various physical and biological applications, such as biological membranes and semiconductor devices. It is shown that such systems may operate in different modes each of which has different dispersion and dissipation properties and, as a consequence, is described by autowave processes of different types. The behavior of a system in all basic modes is analyzed. For each mode, exact solutions to relevant equations are found and their differential conservation laws and intrinsic symmetries are investigated. One of common properties of such equations is the presence of a special superposition principle that describes the discrete structure of excitations in a line that consist of individual elementary excitations. It is shown that autopulses may be generated in such systems

  10. Current-Voltage Characteristics of the Composites Based on Epoxy Resin and Carbon Nanotubes

    Directory of Open Access Journals (Sweden)

    Iwona Pełech

    2015-01-01

    Full Text Available Polymer composites based on epoxy resin were prepared. Multiwalled carbon nanotubes synthesized on iron-cobalt catalyst were applied as a filler in a polymer matrix. Chlorine or hydroxyl groups were incorporated on the carbon nanotubes surface via chlorination or chlorination followed by hydroxylation. The effect of functionalized carbon nanotubes on the epoxy resin matrix is discussed in terms of the state of CNTs dispersion in composites as well as electrical properties. For the obtained materials current-voltage characteristics were determined. They had a nonlinear character and were well described by an exponential-type equation. For all the obtained materials the percolation threshold occurred at a concentration of about 1 wt%. At a higher filler concentration >2 wt%, better conductivity was demonstrated by polymer composites with raw carbon nanotubes. At a lower filler concentration <2 wt%, higher values of electrical conductivity were obtained for polymer composites with modified carbon nanotubes.

  11. Characteristics of gifted and talented student: the current situation in Portugal

    Directory of Open Access Journals (Sweden)

    Leandro Almeida

    2010-04-01

    Full Text Available This article presents the current situation in Portugal with regard to high capability and talented students, focusing on the authors’ experience in the National Association for Study and Intervention in Giftedness (ANEIS. In a sequential argument, we focus on the concept of giftedness, the most specific characteristics of high ability students, and the procedures used in their initial identification and assessment. Also, the most frequent educational responses to these students are described. Finally, we underline some studies conducted as a result of the collaboration between ANEIS and several Portuguese universities. These studies refer to the instruments and procedures used for the assessment of giftedness and talent, and the impact of the implemented educational measures.

  12. Alicyclobacillus spp. in the fruit juice industry: history, characteristics, and current isolation/detection procedures.

    Science.gov (United States)

    Chang, Su-Sen; Kang, Dong-Hyun

    2004-01-01

    The first Alicyclobacillus spp. was isolated in 1982, and was originally thought to be strictly limited to thermophilic and acidic environments. Two years later, another Alicyclobacillus sp., A. acidoterrestris, was identified as the causative agent in spoilage of commercially pasteurized apple juice. Subsequent studies soon found that Alicyclobacillus spp. are soilborne bacteria, and do not strictly require thermophilic and acidic environments. Alicyclobacillus spp. posess several distinct characteristics; the major one is their ability to survive commercial pasteurization processes and produce off-flavors in fruit juices. The fruit juice industry has acknowledged Alicyclobacillus spp. as a major quality control target microorganism. Guaiacol and halophenols were identified as the offensive smelling agent in many Alicyclobacillus spp. related spoilage. Though the exact formation pathway of these off-flavors by Alicyclobacillus spp. are not yet identified, studies report that the presence of Alicyclobacillus spp. in the medium may be a major contributor to the formation of these off-flavors. Many identification methods and isolation media were developed in the last two decades. However, most of these methods were developed specifically for A. acidoterrestris, which was the first identified off-flavor producing Alicyclobacillus. However, recent studies indicate that other species of Alicyclobacillus may also produce guaiacol or the halophenols. In this respect, all Alicyclobacillus spp. should be monitored as potential spoilage bacteria in fruit juices. This article includes an overall review of the history of Alicyclobacillus spp., characteristics, suggested off-flavor production pathways, and commonly used identification methods for the currently identified Alicyclobacillus spp.

  13. Current-voltage characteristics of individual conducting polymer nanotubes and nanowires

    Institute of Scientific and Technical Information of China (English)

    Long Yun-ze; Yin Zhi-Hua; Li Meng-Meng; Gu Chang-Zhi; Duvail Jean-Luc; Jin Ai-zi; Wan Mei-xiang

    2009-01-01

    We report the current-voltage (Ⅰ-Ⅴ) characteristics of individual polypyrrole nanotubes and poly(3,4-ethylenedioxythiophene) (PEDOT) nanowires in a temperature range from 300 K to 2 K. Considering the complex structures of such quasi-one-dimensional systems with an array of ordered conductive regions separated by disordered barriers, we use the extended fluctuation-induced tunneling (FIT) and thermal excitation model (Kaiser expression) to fit the temperature and electric-field dependent Ⅰ-Ⅴ curves. It is found that the Ⅰ-Ⅴ data measured at higher temperatures or higher voltages can be well fitted by the Kaiser expression. However, the low-temperature data around the zero bias clearly deviate from those obtained from this model. The deviation (or zero-bias conductance suppression)could be possibly ascribed to the occurrence of the Coulomb-gap in the density of states near the Femi level and/or the enhancement of electron-electron interaction resulting from nanosize effects, which have been revealed in the previous studies on low-temperature electronic transport in conducting polymer films, pellets and nanostructures. In addition,similar Ⅰ-Ⅴ characteristics and deviation are also observed in an isolated K0.27MnO2 nanowire.

  14. Current-Voltage Characteristics of Nb2O5 nanoporous via light illumination

    Science.gov (United States)

    Samihah Khairir, Nur; Rani, Rozina Abdul; Fazlida Hanim Abdullah, Wan; Hafiz Mamat, Mohamad; Kadir, Rosmalini Abdul; Rusop, M.; Sabirin Zoolfakar, Ahmad

    2018-03-01

    This work discussed the effect of light on I-V characteristics of anodized niobium pentoxide (Nb2O5) which formed nanoporous structure film. The structure was synthesized by anodizing niobium foils in glycerol based solution with 10 wt% supplied by two different voltages, 5V and 10V. The anodized foils that contained Nb2O5 film were then annealed to obtain an orthorhombic phase for 30 minutes at 450°C. The metal contact used for I-V testing was platinum (Pt) and it was deposited using thermal evaporator at 30nm thickness. I-V tests were conducted under different condition; dark and illumination to study the effect of light on I-V characteristics of anodized nanoporous Nb2O5. Higher anodization voltage and longer anodization time resulted in higher pore dispersion and larger pore size causing the current to increase. The increase of conductivity in I-V behaviour of Nb2O5 device is also affected by the illumination test as higher light intensity caused space charge region width to increase, thus making it easier for electron transfer between energy band gap.

  15. Novel method to control antenna currents based on theory of characteristic modes

    Science.gov (United States)

    Elghannai, Ezdeen Ahmed

    Characteristic Mode Theory is one of the very few numerical methods that provide a great deal of physical insight because it allows us to determine the natural modes of the radiating structure. The key feature of these modes is that the total induced antenna current, input impedance/admittance and radiation pattern can be expressed as a linear weighted combination of individual modes. Using this decomposition method, it is possible to study the behavior of the individual modes, understand them and therefore control the antennas behavior; in other words, control the currents induced on the antenna structure. This dissertation advances the topic of antenna design by carefully controlling the antenna currents over the desired frequency band to achieve the desired performance specifications for a set of constraints. Here, a systematic method based on the Theory of Characteristic Modes (CM) and lumped reactive loading to achieve the goal of current control is developed. The lumped reactive loads are determined based on the desired behavior of the antenna currents. This technique can also be used to impedance match the antenna to the source/generator connected to it. The technique is much more general than the traditional impedance matching. Generally, the reactive loads that properly control the currents exhibit a combination of Foster and non-Foster behavior. The former can be implemented with lumped passive reactive components, while the latter can be implemented with lumped non-Foster circuits (NFC). The concept of current control is applied to design antennas with a wide band (impedance/pattern) behavior using reactive loads. We successfully applied this novel technique to design multi band and wide band antennas for wireless applications. The technique was developed to match the antenna to resistive and/or complex source impedance and control the radiation pattern at these frequency bands, considering size and volume constraints. A wide band patch antenna was

  16. Superconducting coil configurations, with low flux leakage, for energy storage

    International Nuclear Information System (INIS)

    Vincent-Viry, O.; Mailfert, A.; Trassart, D.

    2001-01-01

    This paper presents two original types of SMES structures for energy storage. These two groups of SMES structures proceeded from an ideal structure: the full toroid, are modeled by the use of purely surface current densities. Their main advantage is to present no flux leakage, they give then satisfactory solution to the problem of energy storage. (orig.)

  17. Current Transport Mechanisms and Capacitance Characteristic in the InN/InP Schottky Structures

    Directory of Open Access Journals (Sweden)

    K. AMEUR

    2014-05-01

    Full Text Available In this work, electrical characterization of the current-voltage and capacitance- voltage curves for the Metal/InN/InP Schottky structures are investigated. We have studied electrically thin InN films realized by the nitridation of InP (100 substrates using a Glow Discharge Source (GDS in ultra high vacuum. The I (V curves have exhibited anomalous two-step (kink forward bias behaviour; a suitable fit was only obtained by using a model of two discrete diodes in parallel. Thus, we have calculated, using I(V and C(V curves of Hg/InN/InP Schottky structures, the ideality factor n, the saturation current Is, the barrier height jB, the series resistance Rs, the doping concentration Nd and the diffusion voltage Vd. We have also presented the band diagram of this heterojunction which indicates the presence of a channel formed by holes at the interface InN/InP which explain by the presence of two-dimensional electron gas (2-DEG and this was noticed in the presentation of characteristics C(V.

  18. Morphology and current-voltage characteristics of nanostructured pentacene thin films probed by atomic force microscopy.

    Science.gov (United States)

    Zorba, S; Le, Q T; Watkins, N J; Yan, L; Gao, Y

    2001-09-01

    Atomic force microscopy was used to study the growth modes (on SiO2, MoS2, and Au substrates) and the current-voltage (I-V) characteristics of organic semiconductor pentacene. Pentacene films grow on SiO2 substrate in a layer-by-layer manner with full coverage at an average thickness of 20 A and have the highest degree of molecular ordering with large dendritic grains among the pentacene films deposited on the three different substrates. Films grown on MoS2 substrate reveal two different growth modes, snowflake-like growth and granular growth, both of which seem to compete with each other. On the other hand, films deposited on Au substrate show granular structure for thinner coverages (no crystal structure) and dendritic growth for higher coverages (crystal structure). I-V measurements were performed with a platinum tip on a pentacene film deposited on a Au substrate. The I-V curves on pentacene film reveal symmetric tunneling type character. The field dependence of the current indicates that the main transport mechanism at high field intensities is hopping (Poole-Frenkel effect). From these measurements, we have estimated a field lowering coefficient of 9.77 x 10(-6) V-1/2 m1/2 and an ideality factor of 18 for pentacene.

  19. BIOLOGICAL CHARACTERISTICS OF PIKE (ESOX LUCIUS LINNAEUS, 1758 OF THE LOWER DNIEPER RIVER IN CURRENT CONDITIONS

    Directory of Open Access Journals (Sweden)

    K. Geina

    2015-03-01

    Full Text Available Purpose. To analyze major biological characteristics of pike (Esox lucius L., 1758 stock in the lower Dnieper River in the conditions of transformed flow. Methodology. Collection of the ichthyological material was carried out in the lower Dnieper River from commercial fishing gears, including beach seines, drag seines, fyke-nets. Field, laboratory processing of samples and mathematical analysis of the obtained results were carried out according to generally accepted methods and guidelines with some assumptions regarding the duration of pike fattening directly in the lower Dnieper River. Findings. Recent years, there is an increase in the specific weight of younger age groups in the pike stock in the lower Dnieper River. Analysis of linear growth indicates on satisfactory environmental conditions for pike. Current commercial contingent of pike is based on size classes of 46–50 cm versus 22–32 cm in the first half of the last century. Reproductive properties of pike, in particular fecundity, egg size and maturity coefficients did not virtually change compared to those of the last century. Depending on linear sizes, the absolute fecundity is 32.3–155.8 thousand eggs and the maturation coefficient is 11.1–15.7%. Morphologic variability of pike in the lower Dnieper River during the period from 1980s to the present time was observed for plastic features, which characterized fin sizes. Sexual dimorphism in current conditions was observed only for maximum body depth. No significant differences for other plastic features between males and females of pike in the lower Dnieper River. Originality. The data on biological characteristics of pike stock from the lower Dnieper River have been updated. Current fecundity of females of different size groups recorded in commercial catches was been determined. An analysis of morphological variability of major plastic features of pike in the process of the transformation of the Dnieper River flow has been

  20. Numerical calculation of hydrodynamic characteristics of tidal currents for submarine excavation engineering in coastal area

    Directory of Open Access Journals (Sweden)

    Jian-hua Li

    2016-04-01

    Full Text Available In coastal areas with complicated flow movement, deposition and scour readily occur in submarine excavation projects. In this study, a small-scale model, with a high resolution in the vertical direction, was used to simulate the tidal current around a submarine excavation project. The finite volume method was used to solve Navier-Stokes equations and the Reynolds stress transport equation, and the entire process of the tidal current was simulated with unstructured meshes, generated in the irregular shape area, and structured meshes, generated in other water areas. The meshes near the bottom and free surface were densified with a minimum layer thickness of 0.05 m. The volume of fluid method was used to track the free surface, the volume fraction of cells on the upstream boundary was obtained from the volume fraction of adjacent cells, and that on the downstream boundary was determined by the water level process. The numerical results agree with the observed data, and some conclusions can be drawn: after the foundation trench excavation, the flow velocity decreases quite a bit through the foundation trench, with reverse flow occurring on the lee slope in the foundation trench; the swirling flow impedes inflow, leading to the occurrence of dammed water above the foundation trench; the turbulent motion is stronger during ebbing than in other tidal stages, the range with the maximum value of turbulent viscosity, occurring on the south side of the foundation trench at maximum ebbing, is greater than those in other tidal stages in a tidal cycle, and the maximum value of Reynolds shear stress occurs on the south side of the foundation trench at maximum ebbing in a tidal cycle. The numerical calculation method shows a strong performance in simulation of the hydrodynamic characteristics of tidal currents in the foundation trench, providing a basis for submarine engineering construction in coastal areas.

  1. Comparative study on current limiting characteristics of flux-lock type SFCL with series or parallel connection of two coils

    International Nuclear Information System (INIS)

    Lim, S.H.

    2008-01-01

    We investigated the current limiting characteristics of the flux-lock type superconducting fault current limiter (SFCL) with series or parallel connection of two coils. These two flux-lock type SFCLs with magnetically coupled two coils have the same operational principle that the fault current can be limited by the magnetic flux generated between two coils of the SFCL when a fault happens. In addition, the inductance ratio and the winding direction of two coils in both the SFCLs are the major design parameters that affect the fault current limiting characteristics of the SFCL. On the other hand, the operational current and the limiting impedance of both the SFCLs under the same design condition have the different tendency, which results from the different winding methods of two coils on an iron core. Therefore, the comparative study for both the SFCLs from the current limiting performance of the SFCL point of view is needed. To compare the current limiting characteristics of both the SFCLs, the operational current and the limiting impedance of the SFCL, which describes the performance of the SFCL, were derived from each SFCL's electrical equivalent circuit. Through the analysis for the fault current limiting experiments of both the SFCLs, the different current limiting characteristics of both the SFCLs were discussed

  2. Investigations of leakage mechanisms and its influences on a micro swing engine considering rarefaction effects

    International Nuclear Information System (INIS)

    Zhou, Xiong; Zhang, Zhenyu; Kong, Wenjun; Du, Ning

    2016-01-01

    Highlights: • Mechanisms of the leakage flow in different flow regimes have been studied. • The leakage flow regime and patterns in the micro swing engine are presented. • Slip on the walls has a larger effect on leakage flow with decreasing the gap. • Rarefaction effects on the engine performance have been investigated. - Abstract: Considering rarefaction effects, this paper investigated mechanisms of the clearance leakage and its influences on a micro swing engine for the micro power generation by employing three different flow models named as discrete velocity direction (DVD) model, Navier-Stokes equations with slip boundary conditions (NS-slip) and no-slip boundary conditions (NS-no slip). Using the DVD model, this paper firstly studied leakage mechanisms of a micro Couette-Poisueille flow. Factors which control the leakage in different regimes were obtained. Furthermore, the system-level predictions of the clearance leakage in the micro swing engine have been conducted by solving the Navier-Stokes equations. The leakage flow regime, patterns and characteristics were presented. Results by NS-slip and NS-no slip were compared to study the rarefaction effects. Finally, investigations of the engine size and the gap height on the engine performance have been conducted. The significance of the leakage in different engine size regimes was presented, and the results show that rarefaction effects affect the indicated thermal efficiency greatly with the decrease of the engine size scale.

  3. Influence of coupling parameter on current-voltage characteristics of intrinsic Josephson junctions in high-T c superconductors

    International Nuclear Information System (INIS)

    Shukrinov, Yu.M.; Mahfouzi, F.

    2006-01-01

    We study the current-voltage characteristics of intrinsic Josephson junctions in high-T c superconductors by numerical calculations and in framework of capacitively coupled Josephson junctions model we obtain the total number of branches. The influence of the coupling parameter α on the current-voltage characteristics at fixed parameter β (β 2 1/β c , where β c is McCumber parameter) and the influence of α on β-dependence of the current-voltage characteristics are investigated. We obtain the α-dependence of the branch's slopes and branch's endpoints. The presented results show new features of the coupling effect on the scheme of hysteresis jumps in current-voltage characteristics of intrinsic Josephson junctions in high-T c superconductors

  4. Alternating current loss characteristics in (bismuth,lead)SCCO and yttrium barium copper oxide superconducting tapes

    Science.gov (United States)

    Nguyen, Doan Ngoc

    the numerical calculations. The numerical calculations are also capable of investigating eddy current loss in the stabilizer and ferromagnetic loss in the substrate of YBa2Cu3O 7-delta (YBCO) coated conductor. AC loss characteristics and electrodynamics in several (Bi,Pb)2 Sr2Ca2Cu3Ox (Bi-2223) and YBCO tapes were studied experimentally and numerically. It was found that AC loss behavior Ax in HTS tapes is strongly affected by the sample parameters such as cross-section, structure, dimensions, critical current distribution as well as by operation parameters including temperature, frequency, the phase difference between transport current and magnetic field, the orientation of magnetic field. The Ni-5%W substrate in YBCO conductors generates some ferromagnetic loss but this loss component is significantly reduced by a small parallel DC magnetic field. At a given AC magnetic field B0, there is a temperature Tmax at which the magnetization loss is maximum. The design of HTS devices needs to be optimized to avoid operating at that temperature. In general, the total AC loss in HTS tapes is still high for many power device applications, especially for those that present a rather high AC applied magnetic field. The development of low loss conductors is therefore crucial for HTS large-scale applications.

  5. Estimation of leakage power and delay in CMOS circuits using parametric variation

    Directory of Open Access Journals (Sweden)

    Preeti Verma

    2016-09-01

    Full Text Available With the advent of deep-submicron technologies, leakage power dissipation is a major concern for scaling down portable devices that have burst-mode type integrated circuits. In this paper leakage reduction technique HTLCT (High Threshold Leakage Control Transistor is discussed. Using high threshold transistors at the place of low threshold leakage control transistors, result in more leakage power reduction as compared to LCT (leakage control transistor technique but at the scarifies of area and delay. Further, analysis of effect of parametric variation on leakage current and propagation delay in CMOS circuits is performed. It is found that the leakage power dissipation increases with increasing temperature, supply voltage and aspect ratio. However, opposite pattern is noticed for the propagation delay. Leakage power dissipation for LCT NAND gate increases up to 14.32%, 6.43% and 36.21% and delay decreases by 22.5%, 42% and 9% for variation of temperature, supply voltage and aspect ratio. Maximum peak of equivalent output noise is obtained as 127.531 nV/Sqrt(Hz at 400 mHz.

  6. Current-Voltage Characteristics of the Metal / Organic Semiconductor / Metal Structures: Top and Bottom Contact Configuration Case

    Directory of Open Access Journals (Sweden)

    Šarūnas MEŠKINIS

    2013-03-01

    Full Text Available In present study five synthesized organic semiconductor compounds have been used for fabrication of the planar metal / organic semiconductor / metal structures. Both top electrode and bottom electrode configurations were used. Current-voltage (I-V characteristics of the samples were investigated. Effect of the hysteresis of the I-V characteristics was observed for all the investigated samples. However, strength of the hysteresis was dependent on the organic semiconductor used. Study of I-V characteristics of the top contact Al/AT-RB-1/Al structures revealed, that in (0 – 500 V voltages range average current of the samples measured in air is only slightly higher than current measured in nitrogen ambient. Deposition of the ultra-thin diamond like carbon interlayer resulted in both decrease of the hysteresis of I-V characteristics of top contact Al/AT-RB-1/Al samples. However, decreased current and decreased slope of the I-V characteristics of the samples with diamond like carbon interlayer was observed as well. I-V characteristic hysteresis effect was less pronounced in the case of the bottom contact metal/organic semiconductor/metal samples. I-V characteristics of the bottom contact samples were dependent on electrode metal used.DOI: http://dx.doi.org/10.5755/j01.ms.19.1.3816

  7. Characteristics of cold atmospheric plasma source based on low-current pulsed discharge with coaxial electrodes

    Science.gov (United States)

    Bureyev, O. A.; Surkov, Yu S.; Spirina, A. V.

    2017-05-01

    This work investigates the characteristics of the gas discharge system used to create an atmospheric pressure plasma flow. The plasma jet design with a cylindrical graphite cathode and an anode rod located on the axis of the system allows to realize regularly reproducible spark breakdowns mode with a frequency ∼ 5 kHz and a duration ∼ 40 μs. The device generates a cold atmospheric plasma flame with 1 cm in diameter in the flow of various plasma forming gases including nitrogen and air at about 100 mA average discharge current. In the described construction the cathode spots of individual spark channels randomly move along the inner surface of the graphite electrode creating the secondary plasma stream time-average distributed throughout the whole exit aperture area after the decay of numerous filamentary discharge channels. The results of the spectral diagnostics of plasma in the discharge gap and in the stream coming out of the source are presented. Despite the low temperature of atoms and molecules in plasma stream the cathode spots operation with temperature of ∼ 4000 °C at a graphite electrode inside a discharge system enables to saturate the plasma by CN-radicals and atomic carbon in the case of using nitrogen as the working gas.

  8. Current globalization of drug interventional clinical trials: characteristics and associated factors, 2011-2013.

    Science.gov (United States)

    Jeong, Sohyun; Sohn, Minji; Kim, Jae Hyun; Ko, Minoh; Seo, Hee-Won; Song, Yun-Kyoung; Choi, Boyoon; Han, Nayoung; Na, Han-Sung; Lee, Jong Gu; Kim, In-Wha; Oh, Jung Mi; Lee, Euni

    2017-06-21

    Clinical trial globalization is a major trend for industry-sponsored clinical trials. There has been a shift in clinical trial sites towards emerging regions of Eastern Europe, Latin America, Asia, the Middle East, and Africa. Our study objectives were to evaluate the current characteristics of clinical trials and to find out the associated multiple factors which could explain clinical trial globalization and its implications for clinical trial globalization in 2011-2013. The data elements of "phase," "recruitment status," "type of sponsor," "age groups," and "design of trial" from 30 countries were extracted from the ClinicalTrials.gov website. Ten continental representative countries including the USA were selected and the design elements were compared to those of the USA. Factors associated with trial site distribution were chosen for a multilinear regression analysis. The USA, Germany, France, Canada, and United Kingdom were the "top five" countries which frequently held clinical trials. The design elements from nine continental representative countries were quite different from those of the USA; phase 1 trials were more prevalent in India (OR 1.517, p globalization of clinical trials in the emerging regions of Asia, South Africa, and Eastern Europe developed in parallel with the factors of economic drive, population for recruitment, and regulatory constraints.

  9. Seasonal Characteristics of Widespread Ozone Pollution in China and India: Current Model Capabilities and Source Attributions

    Science.gov (United States)

    Gao, M.; Song, S.; Beig, G.; Zhang, H.; Hu, J.; Ying, Q.; McElroy, M. B.

    2017-12-01

    Fast urbanization and industrialization in China and India have led to severe ozone pollution, threatening public health in these densely populated countries. We show the spatial and seasonal characteristics of ozone concentrations using nation-wide observations for these two countries in 2013. We used the Weather Research and Forecasting model coupled to chemistry (WRF-Chem) to conduct one-year simulations and to evaluate how current models capture the important photochemical processes using the exhaustive available datasets in China and India, including surface measurements, ozonesonde data and satellite retrievals. We also employed the factor separation approach to distinguish the contributions of different sectors to ozone during different seasons. The back trajectory model FLEXPART was applied to investigate the role of transport in highly polluted regions (e.g., North China Plain, Yangtze River delta, and Pearl River Delta) during different seasons. Preliminary results indicate that the WRF-Chem model provides a satisfactory representation of the temporal and spatial variations of ozone for both China and India. The factor separation approach offers valuable insights into relevant sources of ozone for both countries providing valuable guidance for policy options designed to mitigate the related problem.

  10. Analysis of Co-Tunneling Current in Fullerene Single-Electron Transistor

    Science.gov (United States)

    KhademHosseini, Vahideh; Dideban, Daryoosh; Ahmadi, MohammadTaghi; Ismail, Razali

    2018-05-01

    Single-electron transistors (SETs) are nano devices which can be used in low-power electronic systems. They operate based on coulomb blockade effect. This phenomenon controls single-electron tunneling and it switches the current in SET. On the other hand, co-tunneling process increases leakage current, so it reduces main current and reliability of SET. Due to co-tunneling phenomenon, main characteristics of fullerene SET with multiple islands are modelled in this research. Its performance is compared with silicon SET and consequently, research result reports that fullerene SET has lower leakage current and higher reliability than silicon counterpart. Based on the presented model, lower co-tunneling current is achieved by selection of fullerene as SET island material which leads to smaller value of the leakage current. Moreover, island length and the number of islands can affect on co-tunneling and then they tune the current flow in SET.

  11. Sistem Proteksi Arus Bocor Menggunakan Earth Leakage Circuit Breaker Berbasis Arduino

    OpenAIRE

    Syukriyadin, Syukriyadin

    2016-01-01

    Touching a live part of electrical equipment either intentionally or unintentionally can cause an electric shock. The touch can occur directly or indirectly and results in the flow of electric current through the human body to the ground. This electric current is known as the leakage current and can have fatal effects on the human body such as burns, cramps, faint and death. This paper aims to design a prototype protection model of the earth leakage circuit breaker device based on Arduino (EL...

  12. Why the CDM can reduce carbon leakage

    International Nuclear Information System (INIS)

    Kallbekken, S.

    2006-04-01

    Carbon leakage is an important concern because it can reduce the environmental effectiveness of the Kyoto Protocol. The Clean Development Mechanism, one of the flexibility mechanisms allowed under the protocol, has the potential to reduce carbon leakage significantly because it reduces the relative competitive disadvantage to Annex B countries of restricting greenhouse gas emissions. The economic intuition behind this mechanism is explored in a theoretical analysis. It is then analyzed numerically using a CGE model. The results indicate that, assuming appropriate accounting for leakage and under realistic assumptions on CDM activity, the CDM has the potential to reduce the magnitude of carbon leakage by around three fifths

  13. Enhanced ground bounce noise reduction in a low-leakage CMOS multiplier

    Science.gov (United States)

    Verma, Bipin Kumar; Akashe, Shyam; Sharma, Sanjay

    2015-09-01

    In this paper, various parameters are used to reduce leakage power, leakage current and noise margin of circuits to enhance their performance. A multiplier is proposed with low-leakage current and low ground bounce noise for the microprocessor, digital signal processors (DSP) and graphics engines. The ground bounce noise problem appears when a conventional power-gating circuit transits from sleep-to-active mode. This paper discusses a reduction in leakage current in the stacking power-gating technique by three modes - sleep, active and sleep-to-active. The simulation results are performed on a 4 × 4 carry-save multiplier for leakage current, active power, leakage power and ground bounce noise, and comparison made for different nanoscales. Ground bounce noise is limited to 90%. The leakage current of the circuit is decimated up to 80% and the active power is reduced to 31%. We performed simulations using cadence virtuoso 180 and 45 nm at room temperature at various supply voltages.

  14. Artificial-Crack-Behavior Test Evaluation of the Water-Leakage Repair Materials Used for the Repair of Water-Leakage Cracks in Concrete Structures

    Directory of Open Access Journals (Sweden)

    Soo-Yeon Kim

    2016-09-01

    Full Text Available There are no existing standard test methods at home and abroad that can verify the performance of water leakage repair materials, and it is thus very difficult to perform quality control checks in the field of water leakage repair. This study determined that the key factors that have the greatest impact on the water leakage repair materials are the micro-behaviors of cracks, and proposed an artificial-crack-behavior test method for the performance verification of the repair materials. The performance of the 15 kinds of repair materials that are currently being used in the field of water leakage repair was evaluated by applying the proposed test method. The main aim of such a test method is to determine if there is water leakage by injecting water leakage repair materials into a crack behavior test specimen with an artificial 5-mm crack width, applying a 2.5 mm vertical behavior load at 100 cycles, and applying 0.3 N/mm2 constant water pressure. The test results showed that of the 15 kinds of repair materials, only two effectively sealed the crack and thus stopped the water leakage. The findings of this study confirmed the effectiveness of the proposed artificial-crack-behavior test method and suggest that it can be used as a performance verification method for checking the responsiveness of the repair materials being used in the field of water leakage repair to the repetitive water leakage behaviors that occur in concrete structures. The study findings further suggest that the use of the proposed test method makes it possible to quantify the water leakage repair quality control in the field.

  15. Valve packing leakage monitoring device

    International Nuclear Information System (INIS)

    Ezekoye, L.I.

    1985-01-01

    A device for monitoring leakage of fluid across a seal in a component connected to a pressurized fluid system including a housing having a chamber with an inlet for receiving fluid leaking across the seal and an outlet. A positioning means is connected to an orifice plug so as to move the plug for permitting the fluid to be discharged through the orifice at the same rate at which it enters the first chamber and means for detecting the movement of the plug is provided to produce and output signal corresponding to the distance moved by the plug and thereby indicate flow rate. The positioning means compromise a piston attached to the plug by a hollow tube and springs, which at low flow rates locate the piston. When flow increases sufficiently pressure increases and urges the piston upwards. A magnetic portion of tube actuates a succession of proximity switches to indicate flow rate. (author)

  16. Model-Based Detection of Pipe Leakage at Joints

    International Nuclear Information System (INIS)

    Kim, Taejin; Youn, Byeng D.; Woo, Sihyong

    2015-01-01

    Time domain reflectometry (TDR) is widely used for wire failure detection. It transmits a pulse that is reflected at the boundaries of different characteristic impedances. By analyzing the reflected signal, TDR makes it possible to locate the failure. In this study, TDR was used to detect the water leakage at a pipe joint. A wire attached to the pipe surface was soaked by water when a leak occurred, which affected the characteristic impedance of the wet part, resulting in a change in the reflected signal. To infer the leakage from the TDR signal, we first developed a finite difference time domain-based forward model that provided the output of the TDR signal given the configuration of the transmission line. Then, by solving the inverse problem, the locations of the leaks were found

  17. Forest Carbon Leakage Quantification Methods and Their Suitability for Assessing Leakage in REDD

    Directory of Open Access Journals (Sweden)

    Sabine Henders

    2012-01-01

    Full Text Available This paper assesses quantification methods for carbon leakage from forestry activities for their suitability in leakage accounting in a future Reducing Emissions from Deforestation and Forest Degradation (REDD mechanism. To that end, we first conducted a literature review to identify specific pre-requisites for leakage assessment in REDD. We then analyzed a total of 34 quantification methods for leakage emissions from the Clean Development Mechanism (CDM, the Verified Carbon Standard (VCS, the Climate Action Reserve (CAR, the CarbonFix Standard (CFS, and from scientific literature sources. We screened these methods for the leakage aspects they address in terms of leakage type, tools used for quantification and the geographical scale covered. Results show that leakage methods can be grouped into nine main methodological approaches, six of which could fulfill the recommended REDD leakage requirements if approaches for primary and secondary leakage are combined. The majority of methods assessed, address either primary or secondary leakage; the former mostly on a local or regional and the latter on national scale. The VCS is found to be the only carbon accounting standard at present to fulfill all leakage quantification requisites in REDD. However, a lack of accounting methods was identified for international leakage, which was addressed by only two methods, both from scientific literature.

  18. Effect of manganese doping on remnant polarization and leakage current in (K0.44,Na0.52,Li0.04)(Nb0.84,Ta0.10,Sb0.06)O3 epitaxial thin films on SrTiO3

    Science.gov (United States)

    Abazari, M.; Akdoǧan, E. K.; Safari, A.

    2008-05-01

    Single phase, epitaxial, ⟨001⟩ oriented, undoped and 1mol% Mn-doped (K0.44,Na0.52,Li0.04)(Nb0.84,Ta0.10,Sb0.06)O3 thin films of 400nm thickness were synthesized on SrRuO3 coated SrTiO3. Such films exhibit well saturated hysteresis loops and have a spontaneous polarization (Ps) of 10μC /cm2, which is a 150% higher over the Ps of the undoped composition. The coercive field of 1mol% Mn doped films is 13kV/cm. Mn-doping results in three orders of magnitude decrease in leakage current above 50kV/cm electric field, which we attribute to the suppression of intrinsic p-type conductivity of undoped films by Mn donors.

  19. Radiofrequency radiation leakage from microwave ovens

    International Nuclear Information System (INIS)

    Lahham, A.; Sharabati, A.

    2013-01-01

    This work presents data on the amount of radiation leakage from 117 microwave ovens in domestic and restaurant use in the West Bank, Palestine. The study of leakage is based on the measurements of radiation emissions from the oven in real-life conditions by using a frequency selective field strength measuring system. The power density from individual ovens was measured at a distance of 1 m and at the height of centre of door screen. The tested ovens were of different types, models with operating powers between 1000 and 1600 W and ages ranging from 1 month to >20 y, including 16 ovens with unknown ages. The amount of radiation leakage at a distance of 1 m was found to vary from 0.43 to 16.4 μW cm -1 with an average value equalling 3.64 μW cm -2 . Leakages from all tested microwave ovens except for seven ovens (∼6 % of the total) were below 10 μW cm -2 . The highest radiation leakage from any tested oven was ∼16.4 μW cm -2 , and found in two cases only. In no case did the leakage exceed the limit of 1 μWcm -1 recommended by the ICNIRP for 2.45-GHz radiofrequency. This study confirms a linear correlation between the amount of leakage and both oven age and operating power, with a stronger dependence of leakage on age. (authors)

  20. Leakage-resilient cryptography from minimal assumptions

    DEFF Research Database (Denmark)

    Hazay, Carmit; López-Alt, Adriana; Wee, Hoeteck

    2013-01-01

    We present new constructions of leakage-resilient cryptosystems, which remain provably secure even if the attacker learns some arbitrary partial information about their internal secret key. For any polynomial ℓ, we can instantiate these schemes so as to tolerate up to ℓ bits of leakage. While the...

  1. Predicting Envelope Leakage in Attached Dwellings

    Energy Technology Data Exchange (ETDEWEB)

    Faakye, O. [Consortium for Advanced Residential Buildings (CARB), Norwalk, CT (United States); Arena, L. [Consortium for Advanced Residential Buildings (CARB), Norwalk, CT (United States); Griffiths, D. [Consortium for Advanced Residential Buildings (CARB), Norwalk, CT (United States)

    2013-07-01

    The most common method for measuring air leakage is to use a single blower door to pressurize and/or depressurize the test unit. In detached housing, the test unit is the entire home and the single blower door measures air leakage to the outside. In attached housing, this 'single unit', 'total', or 'solo' test method measures both the air leakage between adjacent units through common surfaces as well air leakage to the outside. Measuring and minimizing this total leakage is recommended to avoid indoor air quality issues between units, reduce energy losses to the outside, reduce pressure differentials between units, and control stack effect. However, two significant limitations of the total leakage measurement in attached housing are: for retrofit work, if total leakage is assumed to be all to the outside, the energy benefits of air sealing can be significantly over predicted; for new construction, the total leakage values may result in failing to meet an energy-based house tightness program criterion. The scope of this research is to investigate an approach for developing a viable simplified algorithm that can be used by contractors to assess energy efficiency program qualification and/or compliance based upon solo test results.

  2. Horizontal H 2-air turbulent buoyant jet resulting from hydrogen leakage

    KAUST Repository

    El-Amin, Mohamed; Sun, Shuyu

    2012-01-01

    The current article is devoted to introducing mathematical and physical analyses with numerical investigation of a buoyant jet resulting from hydrogen leakage in air from a horizontal round source. H 2-air jet is an example of the non

  3. Visual Inspection of Water Leakage from Ground Penetrating Radar Radargram

    Science.gov (United States)

    Halimshah, N. N.; Yusup, A.; Mat Amin, Z.; Ghazalli, M. D.

    2015-10-01

    Water loss in town and suburban is currently a significant issue which reflect the performance of water supply management in Malaysia. Consequently, water supply distribution system has to be maintained in order to prevent shortage of water supply in an area. Various techniques for detecting a mains water leaks are available but mostly are time-consuming, disruptive and expensive. In this paper, the potential of Ground Penetrating Radar (GPR) as a non-destructive method to correctly and efficiently detect mains water leaks has been examined. Several experiments were designed and conducted to prove that GPR can be used as tool for water leakage detection. These include instrument validation test and soil compaction test to clarify the maximum dry density (MDD) of soil and simulation studies on water leakage at a test bed consisting of PVC pipe burying in sand to a depth of 40 cm. Data from GPR detection are processed using the Reflex 2D software. Identification of water leakage was visually inspected from the anomalies in the radargram based on GPR reflection coefficients. The results have ascertained the capability and effectiveness of the GPR in detecting water leakage which could help avoiding difficulties with other leak detection methods.

  4. VISUAL INSPECTION OF WATER LEAKAGE FROM GROUND PENETRATING RADAR RADARGRAM

    Directory of Open Access Journals (Sweden)

    N. N. Halimshah

    2015-10-01

    Full Text Available Water loss in town and suburban is currently a significant issue which reflect the performance of water supply management in Malaysia. Consequently, water supply distribution system has to be maintained in order to prevent shortage of water supply in an area. Various techniques for detecting a mains water leaks are available but mostly are time-consuming, disruptive and expensive. In this paper, the potential of Ground Penetrating Radar (GPR as a non-destructive method to correctly and efficiently detect mains water leaks has been examined. Several experiments were designed and conducted to prove that GPR can be used as tool for water leakage detection. These include instrument validation test and soil compaction test to clarify the maximum dry density (MDD of soil and simulation studies on water leakage at a test bed consisting of PVC pipe burying in sand to a depth of 40 cm. Data from GPR detection are processed using the Reflex 2D software. Identification of water leakage was visually inspected from the anomalies in the radargram based on GPR reflection coefficients. The results have ascertained the capability and effectiveness of the GPR in detecting water leakage which could help avoiding difficulties with other leak detection methods.

  5. Current sheet characteristics of a parallel-plate electromagnetic plasma accelerator operated in gas-prefilled mode

    Science.gov (United States)

    Liu, Shuai; Huang, Yizhi; Guo, Haishan; Lin, Tianyu; Huang, Dong; Yang, Lanjun

    2018-05-01

    The axial characteristics of a current sheet in a parallel-plate electromagnetic plasma accelerator operated in gas-prefilled mode are reported. The accelerator is powered by a fourteen stage pulse forming network. The capacitor and inductor in each stage are 1.5 μF and 300 nH, respectively, and yield a damped oscillation square wave of current with a pulse width of 20.6 μs. Magnetic probes and photodiodes are placed at various axial positions to measure the behavior of the current sheet. Both magnetic probe and photodiode signals reveal a secondary breakdown when the current reverses the direction. An increase in the discharge current amplitude and a decrease in pressure lead to a decrease in the current shedding factor. The current sheet velocity and thickness are nearly constant during the run-down phase under the first half-period of the current. The current sheet thicknesses are typically in the range of 25 mm to 40 mm. The current sheet velocities are in the range of 10 km/s to 45 km/s when the discharge current is between 10 kA and 55 kA and the gas prefill pressure is between 30 Pa and 800 Pa. The experimental velocities are about 75% to 90% of the theoretical velocities calculated with the current shedding factor. One reason for this could be that the idealized snowplow analysis model ignores the surface drag force.

  6. Factors related to ostomy leakage in the community setting.

    Science.gov (United States)

    Ratliff, Catherine R

    2014-01-01

    pouch was associated with no leakage or seldom leakage group. Additional studies looking at specific characteristics of patients with ostomy leakage are needed to validate these results.

  7. Preventive testing and leakage detection in pipe-lines of steam condensers and generators of a PWR type reactor

    International Nuclear Information System (INIS)

    Canalini, A.; Carvalho, N.C. de

    1985-01-01

    The non-destructive methods: Spum, Helium and Hydrostatic used in leakage detection in condenser pipelines for PWR type reactors are presented. The time, costs, sensitivity, resources necessary and personnel development factors are considered to choose adequated method, in function of nuclear power plant conditions. The leakage tests are applied in pressurized systems or vacuum. Eddy Current testing is used in condensers and steam generators aiming to avoid leakage in these equipments. The spume testing for leakage detection in condenser pipelines - which operation - and hydrostatic testing for leakage detection through reaming with shutdown - were most efficients. The Helium testing applied in pressurized systems or submitted to vacuum systems presented satisfactory results. The Eddy Current testing in condenser and steam generator pipelines reached desired objective, reducing leakage in the first and preserving the integrity in the second. (M.C.K.) [pt

  8. High-temperature performance of MoS{sub 2} thin-film transistors: Direct current and pulse current-voltage characteristics

    Energy Technology Data Exchange (ETDEWEB)

    Jiang, C.; Samnakay, R.; Balandin, A. A., E-mail: balandin@ee.ucr.edu [Nano-Device Laboratory (NDL), Department of Electrical Engineering, Bourns College of Engineering, University of California—Riverside, Riverside, California 92521 (United States); Phonon Optimized Engineered Materials (POEM) Center, Materials Science and Engineering Program, University of California—Riverside, Riverside, California 92521 (United States); Rumyantsev, S. L. [Department of Electrical, Computer, and Systems Engineering, Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States); Ioffe Physical-Technical Institute, St. Petersburg 194021 (Russian Federation); Shur, M. S. [Department of Electrical, Computer, and Systems Engineering, Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States)

    2015-02-14

    We report on fabrication of MoS{sub 2} thin-film transistors (TFTs) and experimental investigations of their high-temperature current-voltage characteristics. The measurements show that MoS{sub 2} devices remain functional to temperatures of at least as high as 500 K. The temperature increase results in decreased threshold voltage and mobility. The comparison of the direct current (DC) and pulse measurements shows that the direct current sub-linear and super-linear output characteristics of MoS{sub 2} thin-films devices result from the Joule heating and the interplay of the threshold voltage and mobility temperature dependences. At temperatures above 450 K, a kink in the drain current occurs at zero gate voltage irrespective of the threshold voltage value. This intriguing phenomenon, referred to as a “memory step,” was attributed to the slow relaxation processes in thin films similar to those in graphene and electron glasses. The fabricated MoS{sub 2} thin-film transistors demonstrated stable operation after two months of aging. The obtained results suggest new applications for MoS{sub 2} thin-film transistors in extreme-temperature electronics and sensors.

  9. Water characteristics and transport of the Antarctic circumpolar current in the Indian Ocean

    Digital Repository Service at National Institute of Oceanography (India)

    Muraleedharan, P.M.; Mathew, B.

    Geostrophic velocities are computed across meridians 37 degrees E and 105 degrees E using hydrographic data. The estimated mass transport is represented on a temperature - salinity diagram. The characteristics of the water within the Antarctic...

  10. Leakage of caesium braquitherapy sources

    International Nuclear Information System (INIS)

    Lozada, J.A.

    1998-01-01

    In several Venezuelan public hospitals where cervix uteri tumours are treated by intracavitary radiotherapy, that use manual after loading Fletcher method, with Caesium 137 sources, the use of improper source holders, locally manufactured from pieces of drainage plastic tubing, which deteriorated and created a corrosive environment all around the sources, omission of manufacturer's recommendations regarding corrosion information, source storage, inspection and testing, violation of International Atomic Energy Agency Radiation Protection Procedures, and lack of proper regulatory control, resulted integrity damage to about sixty special form sources (ISO2919 C 63322), leakage of Cs-137 from a supposed insoluble refractory active content (caesium silicoaluminate), and contamination of applicators, floors and bedding. When the situation was detected by means removal contamination tests, after routine inspections, the sources were removed from the hospitals, decontaminated by means of immersion in 3% EDTA solution in ultrasonic bath, subjected to leaking assessment tests, and the ones that passed were placed in low cost stainless steel source holders, designed and built by the instituto Venezolano de Investigaciones Cientificas (IVIC) returned to the hospitals. The leaking sources were removed from use and considered radioactive waste. In order to avoid the occurrence of similar situations, all the importers of such sources are now required to send them to IVIC for testing and placement in proper source holders, before they are shipped to the hospitals. (author)

  11. Characteristics of disruptive plasma current decay in the HT-2 tokamak

    International Nuclear Information System (INIS)

    Abe, Mitsushi; Takeuchi, Kazuhiro; Otsuka, Michio

    1993-01-01

    Motions of plasma current channel and time evolutions of eddy current distribution on the vacuum vessel during disruptive plasma current decay were studied experimentally in the Hitachi tokamak HT-2. The plasmas are vertically elongated and circularly shaped plasmas. A disruptive plasma current decay has three phases. During the first phase, a large displacement of the plasma position without plasma current decay is observed. Rapid plasma current decay is observed during the second phase and the decay rate is roughly constant with time. The eddy current distribution is like that due to the shell effect which creates a poloidal field to reduce the plasma displacement. During the third phase, the plasma current decays exponentially. The second phase is observed in slightly elongated and high plasma current (> 20 kA) circularly shaped plasmas. The plasma current decay rates in the second phase depend on the plasma cross sectional shape, but they do not in the third phase. The magnetic axis moves from the plasma area to the vacuum vessel wall between the second and third phases. (author)

  12. Impact of the Indonesian Throughflow on Agulhas leakage

    Directory of Open Access Journals (Sweden)

    D. Le Bars

    2013-09-01

    Full Text Available Using ocean models of different complexity we show that opening the Indonesian Passage between the Pacific and the Indian oceans increases the input of Indian Ocean water into the South Atlantic via the Agulhas leakage. In a strongly eddying global ocean model this response results from an increased Agulhas Current transport and a constant proportion of Agulhas retroflection south of Africa. The leakage increases through an increased frequency of ring shedding events. In an idealized two-layer and flat-bottom eddy resolving model, the proportion of the Agulhas Current transport that retroflects is (for a wide range of wind stress forcing not affected by an opening of the Indonesian Passage. Using a comparison with a linear model and previous work on the retroflection problem, the result is explained as a balance between two mechanisms: decrease retroflection due to large-scale momentum balance and increase due to local barotropic/baroclinic instabilities.

  13. Experimental evaluation of clinical colon anastomotic leakage.

    Science.gov (United States)

    Pommergaard, Hans-Christian

    2014-03-01

    Colorectal anastomotic leakage remains a frequent and serious complication in gastrointestinal surgery. Patient and procedure related risk factors for anastomotic leakage have been identified. However, the responsible pathophysiological mechanisms are still unknown. Among these, ischemia and insufficient surgical technique have been suggested to play a central role. Animal models are valuable means to evaluate pathophysiological mechanisms and may be used to test preventive measures aiming at reducing the risk of anastomotic leakage, such as external anastomotic coating. The aim of this thesis was to: Clarify the best suited animal to model clinical anastomotic leakage in humans; Create animal models mimicking anastomotic leakage in humans induced by insufficient surgical technique and tissue ischemia; Determine the best suited coating materials to prevent anastomotic leakage. This study is a systematic review using the databases MEDLINE and Rex. MEDLINE was searched up to October 2010 to identify studies on experimental animal models of clinical colon anastomotic leakage. From the Rex database, textbooks on surgical aspects as well as gastrointestinal physiology and anatomy of experimental animals were identified. The results indicated that the mouse and the pig are the best suited animals to evaluate clinical anastomotic leakage. However, the pig model is less validated and more costly to use compared with the mouse. Most frequently, rats are used as models. However, extreme interventions are needed to create clinical leakage in these animals. The knowledge from this study formed the basis for selecting the animal species most suited for the models in the next studies. STUDY 2: In this experimental study, technically insufficient colonic anastomoses were performed in 110 C57BL/6 mice. The number of sutures in the intervention group was reduced to produce a suitable leakage rate. Moreover, the analgesia and suture material were changed in order to optimize the

  14. Fault identification in crystalline silicon PV modules by complementary analysis of the light and dark current-voltage characteristics

    DEFF Research Database (Denmark)

    Spataru, Sergiu; Sera, Dezso; Hacke, Peter

    2016-01-01

    This article proposes a fault identification method, based on the complementary analysis of the light and dark current-voltage (I-V) characteristics of the photovoltaic (PV) module, to distinguish between four important degradation modes that lead to power loss in PV modules: (a) degradation of t...

  15. Leakage losses from a hydraulic fracture and fracture propagation

    International Nuclear Information System (INIS)

    Johnson, R.E.; Gustafson, C.W.

    1988-01-01

    The fluid mechanics of viscous fluid injection into a fracture embedded in a permeable rock formation is studied. Coupling between flow in the fracture and flow in the rock is retained. The analysis is based on a perturbation scheme that assumes the depth of penetration of the fluid into the rock is small compared to the characteristic length w 3 0 /k, where w 0 is the characteristic crack width and k is the permeability. This restriction, however, is shown to be minor. The spatial dependence of the leakage rate per unit length from the fracture is found to be linear, decreasing from the well bore to the fracture tip where it vanishes. The magnitude of the leakage rate per unit length is found to decay in time as t -1 /sup // 3 if the injection rate at the well bore is constant, and as t -1 /sup // 2 if the well bore pressure is held constant. The results cast considerable doubt on the validity of Carter's well-known leakage formula (Drilling Prod. Prac. API 1957, 261) derived from a one-dimensional theory. Using the simple fracture propagation model made popular by Carter, the present work also predicts that the fracture grows at a rate proportional to t 1 /sup // 3 for a fixed well bore injection rate and a rate proportional to t 1 /sup // 4 for a fixed well bore pressure

  16. Comparative characteristic of transmembrane currents and caffeine-induced responses of intact and irradiated small intestine smooth muscle cells

    International Nuclear Information System (INIS)

    Stepanov, Yu.V.; Gordienko, D.V.; Preobrazhenskaya, T.D.; Stepanova, L.I.; Vojtsitskij, V.M.

    1994-01-01

    A comparative investigation of transmembrane ion currents and caffeine-induced responses of single smooth muscle cells isolated from the circular layer of rat small intestine was curried out by the method of 'patch-clamp'. No reliable difference in potential-dependent and amplitude-kinetic characteristics of transmembrane ion currents in cells of intact and irradiated with dose of 3 Gy rats was revealed. In cells of irradiated animals external application of caffeine (4 mM) was not accompanied by strong quick-inactivated transient Ca 2+ -dependent potassium current as in control

  17. Spectral characteristics of the coastal currents off Thal, Bombay during a fair day

    Digital Repository Service at National Institute of Oceanography (India)

    Suryanarayana, A.; Swamy, G.N.

    A typical one-day record of currents measured every 20 min. with a direct reading current meter at an anchored station of mean water depth about 8 m off Thal (Bombay Coast, India) during a fair day was subjected to spectral analysis to identify...

  18. Comparison of Unmodulated Current Control Characteristics of Permanent Magnet Synchronous Motor

    Directory of Open Access Journals (Sweden)

    Anwar Muqorobin

    2014-12-01

    Full Text Available This paper discusses comparison of unmodulated current controls in PMSM, more specifically, on-off, sliding mode, predictive and hybrid controls. The purpose of this study is to select the most appropriate control technique to be adopted. The comparison method is preceded by modeling the motor and entering the values of the motor parameters. PI control is used for speed control and zero d-axis current is employed. Furthermore, performing simulation for each type ofthe selected current controls and analyzing their responses in terms of dq and abc currents, q-axis current response with step reference, as well as THD. Simulation results show that the on-off control gives the best overall performance based on its abc-axis current ripple and THD at large load torque. The hybrid control shows the best response occurring only at the fastest transient time of q-axis current but its response exhibits bad qualities compared with other controls. The predictive control yields the best responses offering the smallest d-axis ripple current and THD at small load torque condition. The sliding mode control, however, does not exhibit any prominent performance compared to the others. Results presented in this paper further indicate that for the PMSM used in the simulation the most appropriate control is the predictive control.

  19. Critical current characteristics in high T/sub c/ oxide superconductors

    International Nuclear Information System (INIS)

    Matsushita, T.; Ni, B.

    1989-01-01

    Critical current densities are theoretically estimated for single-crystalline thin films, polycrystalline bulk materials with oriented and random textures of superconducting oxides. The percolation theory is used and the effect of depression of the transport current through grain boundaries is taken into account. A comparison is made with existing experimental results

  20. Measurement strategy of the water leakage into a low pressure sodium boundary for a liquid metal reactor

    International Nuclear Information System (INIS)

    Hur, S.; Kim, D.H.; Seong, S.H.; Kim, S.O.

    2004-01-01

    This paper deals with the measurement strategy of a water leakage into sodium boundary for a liquid metal reactor. There are several methods including the chemical sensing method, pressure sensing methods, and non-destructive method including the acoustic monitoring technique to measure the leakage. As for the results of the analysis with respect to the event propagation characteristics, it has been recommended that the acoustic method has a capability to detect small and intermediate leaks within required response time of 10 seconds. A leak of one gram/sec could be currently detected within the required response time of 10 seconds with a high reliability. In the case of less than a one gram/sec leakage, the response time could not meet our requirements due to a complicated signal processing logic. Thus, the system configuration for a fast processing of a leak detection has been recommended. It is expected that this configuration of the leak detection system could reduce the response time due to the distributed and parallel processing scheme. (orig.)

  1. Leakage Resilient Secure Two-Party Computation

    DEFF Research Database (Denmark)

    Damgård, Ivan Bjerre; Hazay, Carmit; Patra, Arpita

    2012-01-01

    we initiate the study of {\\em secure two-party computation in the presence of leakage}, where on top of corrupting one of the parties the adversary obtains leakage from the content of the secret memory of the honest party. Our study involves the following contributions: \\BE \\item {\\em Security...... and returns its result. Almost independently of secure computation, the area of {\\em leakage resilient cryptography} has recently been evolving intensively, studying the question of designing cryptographic primitives that remain secure even when some information about the secret key is leaked. In this paper...

  2. Method to detect steam generator tube leakage

    International Nuclear Information System (INIS)

    Watabe, Kiyomi

    1994-01-01

    It is important for plant operation to detect minor leakages from the steam generator tube at an early stage, thus, leakage detection has been performed using a condenser air ejector gas monitor and a steam generator blow down monitor, etc. In this study highly-sensitive main steam line monitors have been developed in order to identify leakages in the steam generator more quickly and accurately. The performance of the monitors was verified and the demonstration test at the actual plant was conducted for their intended application to the plants. (author)

  3. Mathematical model of voltage-current characteristics of Bi(2223)/Ag magnets under an external magnetic field

    CERN Document Server

    Pitel, J; Lehtonen, J; Kovács, P

    2002-01-01

    We have developed a mathematical model, which enables us to predict the voltage-current V(I) characteristics of a solenoidal high-temperature superconductor (HTS) magnet subjected to an external magnetic field parallel to the magnet axis. The model takes into account the anisotropy in the critical current-magnetic field (I sub c (B)) characteristic and the n-value of Bi(2223)Ag multifilamentary tape at 20 K. From the power law between the electric field and the ratio of the operating and critical currents, the voltage on the magnet terminals is calculated by integrating the contributions of individual turns. The critical current of each turn, at given values of operating current and external magnetic field, is obtained by simple linear interpolation between the two suitable points of the I sub c (B) characteristic, which corresponds to the angle alpha between the vector of the resulting magnetic flux density and the broad tape face. In fact, the model is valid for any value and orientation of external magneti...

  4. Barrier lowering effect and dark current characteristics in asymmetric GaAs/AlGaAs multi quantum well structure

    Energy Technology Data Exchange (ETDEWEB)

    Altin, E. [Inonu University, Scientific and Technological Research Center, Malatya (Turkey); Anadolu University, Department of Physics, Eskisehir (Turkey); Hostut, M. [Akdeniz University, Department of Secondary Education of Science and Maths., Division of Physics Education, Antalya (Turkey); Ergun, Y. [Anadolu University, Department of Physics, Eskisehir (Turkey)

    2011-12-15

    In this study, we investigate dark current voltage characteristics of GaAs/AlGaAs staircase-like asymmetric multiquantum well structure at various temperatures experimentally. The activation energy is calculated by using Arrhenius plots at different voltages. It is found that the activation energy decreased with increasing electric field. This result is evaluated using a barrier lowering effect which is a combination of geometrical and Poole-Frenkel effects. Measured dark current density-voltage (J-V) characteristics compared with the Levine model, 3D carrier drift model and the emission capture model. The best agreement with the experimental results of dark current densities is obtained by the Levine model. (orig.)

  5. Direct-current polarization characteristics of various AlGaAs laser diodes

    Science.gov (United States)

    Fuhr, P. L.

    1984-01-01

    Polarization characteristics of AlGaAs laser diodes having various device geometries have been measured. Measurements were performed with the laser diodes operating under dc conditions. Results show that laser diodes having different device geometries have optical outputs that exhibit varying degrees of polarization purity. Implications of this result, with respect to incoherent polarization-beam combining, are addressed.

  6. Determination of the internal parameters of tc from the current-voltage characteristics

    International Nuclear Information System (INIS)

    Kaibyshev, V.Z.

    1986-01-01

    This paper proposes a method for determining the effective work function of a collector, the electron temperature, and the voltage drop in the interelectrode gap from the experimental vurrent-voltage characteristics (IVC). Analysis of the boundary conditions at the collector shows that as the emission from the collector increases the height of the potential jump retarding plasma electrons decrease

  7. Signal attenuation due to cavity leakage

    International Nuclear Information System (INIS)

    Sherman, M.H.; Modera, M.P.

    1988-01-01

    The propagation of sound waves in fluids requires information about three properties of the system: capacitance (compressibility), resistance (friction), and inductance (inertia). Acoustical design techniques to date have tended to ignore the frictional effects associated with airflow across the envelope of the acoustic cavity (e.g., resistive vents). Since such leakage through the cavity envelope is best expressed with a power law dependence on the pressure, standard Fourier techniques that rely on linearity cannot be used. In this article, the theory relevant to nonlinear leakage is developed and equations presented. Potential applications of the theory to techniques for quantifying the leakage of buildings are presented. Experimental results from pressure decays in a full-scale test structure are presented and the leakage so measured is compared with independent measurements to demonstrate the technique

  8. Electroplating eliminates gas leakage in brazed areas

    Science.gov (United States)

    Leigh, J. D.

    1966-01-01

    Electroplating method seals brazed or welded joints against gas leakage under high pressure. Any conventional electroplating process with many different metal anodes can be used, as well as the build up of layers of different metals to any required thickness.

  9. Radiation leakage from linac electron applicator assembly

    International Nuclear Information System (INIS)

    Keys, R.A.; Purdy, J.A.

    1984-01-01

    The electron beam applicator system currently in use on the linear accelerator is constructed of light-weight fiberglass and aluminum. With an applicator in place on the accelerator, the photon collimator jaws are automatically set several centimeters greater than the electron field size projected at the patient's surface. To ensure that no regions of high dose levels exist outside the useful beam, ionization and film measurements were made to quantitate the amount of leakage radiation through the 10 cm x 10 cm and 25 cm x 25 cm applicators. In most regions, the ionization levels at the patient's surface were below 5% of the central axis dose. In one area for the 25 cm applicator, the percentage ionization was 8.5%, which could be reduced by the addition of a small piece of 1/8 inch thick lead. However, ionization levels on the outside surface of the applicator were found to be considerably higher at certain locations for the 25 cm applicator. Results for 6, 9, 12 and 20 MeV electrons are reported here

  10. Analysis of ONKALO water leakage mapping results

    International Nuclear Information System (INIS)

    Ahokas, H.; Nummela, J; Turku, J.

    2014-04-01

    As part of the programme for the final disposal of spent nuclear fuel, an analysis has been compiled of water leakage mapping performed in ONKALO. Leakage mapping is part of the Olkiluoto Monitoring Programme (OMO) and the field work has been carried out by Posiva Oy. The main objective of the study is to analyse differences detected between mapping campaigns carried out typically twice a year in 2005-2012. Differences were estimated to be caused by the differences in groundwater conditions caused by seasonal effects or by differences between the years. The effect of technical changes like shotcreting, postgrouting, ventilation etc. on the results was also studied. The development of the visualisation of mapping results was also an objective of this work. Leakage mapping results have been reported yearly in the monitoring reports of Hydrology with some brief comments on the detected differences. In this study, the development of the total area and the number of different leakages as well as the correlation of changes with shotcreting and grouting operations were studied. In addition, traces of fractures on tunnel surfaces, and the location of rock bolts and drain pipes were illustrated together with leakage mapping. In water leakage mapping, the tunnel surfaces are visually mapped to five categories: dry, damp, wet, dripping and flowing. Major changes were detected in the total area of damp leakages. It is likely that the increase has been caused by the condensation of warm ventilation air on the tunnel surfaces and the corresponding decrease by the evaporation of moisture into the dry ventilation air. Shotcreting deep in ONKALO may also have decreased the total area of damp leakages. Changes in the total area and number of wet leakages correlate at least near the surface with differences in yearly precipitation. It is possible that strong rains have also caused a temporary increase in wet leakages. Dripping and wet leakages have been observed on average more

  11. Analysis of ONKALO water leakage mapping results

    Energy Technology Data Exchange (ETDEWEB)

    Ahokas, H.; Nummela, J; Turku, J. [Poeyry Finland Oy, Vantaa (Finland)

    2014-04-15

    As part of the programme for the final disposal of spent nuclear fuel, an analysis has been compiled of water leakage mapping performed in ONKALO. Leakage mapping is part of the Olkiluoto Monitoring Programme (OMO) and the field work has been carried out by Posiva Oy. The main objective of the study is to analyse differences detected between mapping campaigns carried out typically twice a year in 2005-2012. Differences were estimated to be caused by the differences in groundwater conditions caused by seasonal effects or by differences between the years. The effect of technical changes like shotcreting, postgrouting, ventilation etc. on the results was also studied. The development of the visualisation of mapping results was also an objective of this work. Leakage mapping results have been reported yearly in the monitoring reports of Hydrology with some brief comments on the detected differences. In this study, the development of the total area and the number of different leakages as well as the correlation of changes with shotcreting and grouting operations were studied. In addition, traces of fractures on tunnel surfaces, and the location of rock bolts and drain pipes were illustrated together with leakage mapping. In water leakage mapping, the tunnel surfaces are visually mapped to five categories: dry, damp, wet, dripping and flowing. Major changes were detected in the total area of damp leakages. It is likely that the increase has been caused by the condensation of warm ventilation air on the tunnel surfaces and the corresponding decrease by the evaporation of moisture into the dry ventilation air. Shotcreting deep in ONKALO may also have decreased the total area of damp leakages. Changes in the total area and number of wet leakages correlate at least near the surface with differences in yearly precipitation. It is possible that strong rains have also caused a temporary increase in wet leakages. Dripping and wet leakages have been observed on average more

  12. Current-voltage characteristics of a tunnel junction with resonant centers

    International Nuclear Information System (INIS)

    Ivanov, T.; Valtchinov, V.

    1994-05-01

    We calculated the I-V characteristics of a tunnel junction containing impurities in the barrier. We consider the indirect resonant tunneling involving the impurities. The Coulomb repulsion energy E c between two electrons with opposite spins simultaneously residing on the impurity is introduced by an Anderson Hamiltonian. At low temperatures T is much less than E c the I-V characteristics is linear in V both for V c and for V>E c and changes slope at V=E c . This behaviour reflects the energy spectrum of the impurity electrons - the finite value of the charging energy E c . At T ∼ E c the junction reveals an ohmic-like behaviour as a result of the smearing out of the charging effects by the thermal fluctuations. (author). 10 refs, 2 figs

  13. The Fibromyalgia Impact Questionnaire (FIQ): a review of its development, current version, operating characteristics and uses.

    Science.gov (United States)

    Bennett, R

    2005-01-01

    The Fibromyalgia Impact Questionnaire (FIQ) was developed in the late 1980s by clinicians at Oregon Health & Science University in an attempt to capture the total spectrum of problems related to fibromyalgia and the responses to therapy. It was first published in 1991 and since that time has been extensively used as an index of therapeutic efficacy. Overall, it has been shown to have a credible construct validity, reliable test-retest characteristics and a good sensitivity in demonstrating therapeutic change. The original questionnaire was modified in 1997 and 2002, to reflect ongoing experience with the instrument and to clarify the scoring system. The latest version of the FIQ can be found at the web site of the Oregon Fibromyalgia Foundation (www.myalgia.com/FIQ/FIQ). The FIQ has now been translated into eight languages, and the translated versions have shown operating characteristics similar to the English version.

  14. Investigation of DC current injection effect on the microwave characteristics of HTS YBCO microstrip resonators

    Energy Technology Data Exchange (ETDEWEB)

    Nurgaliev, T., E-mail: timur@ie.bas.bg [Institute of Electronics, Bulgarian Academy of Sciences, 72 Tsarigradsko Chausse, 1784 Sofia (Bulgaria); Blagoev, B.; Mateev, E.; Neshkov, L. [Institute of Electronics, Bulgarian Academy of Sciences, 72 Tsarigradsko Chausse, 1784 Sofia (Bulgaria); Strbik, V. [Institute of Electrical Engineering, Slovak Academy of Sciences, Dúbravská cesta 9, 841 04 Bratislava (Slovakia); Uspenskaya, L. [Institute of Solid State Physics, Russian Academy of Sciences, 142432 Chernogolovka, Moscow (Russian Federation); Nedkov, I. [Institute of Electronics, Bulgarian Academy of Sciences, 72 Tsarigradsko Chausse, 1784 Sofia (Bulgaria); Chromik, Š. [Institute of Electrical Engineering, Slovak Academy of Sciences, Dúbravská cesta 9, 841 04 Bratislava (Slovakia)

    2014-03-15

    Highlights: • Current (spin) injection effect in LSMO/YBCO was studied by impedance measurements. • Complex impedance of YBCO increases at current injection from LSMO to YBCO at 77 K. • This increase is due to an increase of the quasiparticle conductivity of YBCO. • Injection does not significantly affect the relaxation time of the quasiparticles. - Abstract: The DC current injection effect from a ferromagnetic (FM) La{sub 0.7}Sr{sub 0.3}MnO{sub 3} (LSMO) to a high temperature superconducting (HTS) Y{sub 1}Ba{sub 2}Cu{sub 3}O{sub 7−x} (YBCO) thin film was investigated by the microwave surface impedance measurements in a FM/HTS structure, formed as a microstrip resonator for improving the sensitivity of the experiments. The quality factor and the resonance frequency of this structure were found to strongly depend on the current strength, injected from the LSMO electrode into the HTS microstrip electrode. The magnetic penetration depth and the quasiparticle conductivity of the HTS component were determined to increase under DC current injection process, which in all probability stimulated breaking of Cooper pairs and led to a decrease of the superfluid concentration and an increase of the normal fluid concentration without significantly affecting the relaxation time of the quasiparticles.

  15. Characteristics of persistent-current mode of HTS coil on superconducting electromagnet

    International Nuclear Information System (INIS)

    Lee, C.Y.; Kim, J.; Han, Y.J.; Kang, B.; Chung, Y.D.; Yoon, Y.S.; Chu, S.Y.; Hwang, Y.J.; Jo, H.C.; Jang, J.Y.; Ko, T.K.

    2011-01-01

    The levitation gap of an electromagnetic suspension (EMS) system affects the current decay rate of superconducting electromagnet. The presence of iron core provides a significant benefit in the PCM performance of SC coil. The increased levitation gap of the EMS model with the SC-EM could negatively affect the design of SC-EM operated in PCM. This paper investigates the way in which the levitation gap of an electromagnetic suspension (EMS) system affects the current decay rate of superconducting electromagnet (SC-EM) operated in persistence-current mode (PCM). Using inductance analyzed from the magnetic circuit of an EMS model, the current decay rate caused by the variation in the levitation gap was simulated. In order to experimentally verify the simulation results, we fabricated a small-scale EMS model with SC coil operated in PCM and measured the current decay rates at different levitation gaps. The result showed that the presence of iron core provides a significant benefit in the PCM performance of SC coil, but the benefit decreased as the levitation gap increases. This study revealed that the increased levitation gap of the EMS model with the SC-EM could negatively affect the design of SC-EM operated in PCM.

  16. Technology evaluation for space station atmospheric leakage

    Energy Technology Data Exchange (ETDEWEB)

    Lemon, D.K.; Friesel, M.A.; Griffin, J.W.; Skorpik, J.R.; Shepard, C.L.; Antoniak, Z.I.; Kurtz, R.J.

    1990-02-01

    A concern in operation of a space station is leakage of atmosphere through seal points and through the walls as a result of damage from particle (space debris and micrometeoroid) impacts. This report describes a concept for a monitoring system to detect atmosphere leakage and locate the leak point. The concept is based on analysis and testing of two basic methods selected from an initial technology survey of potential approaches. 18 refs., 58 figs., 5 tabs.

  17. Effect of sheath material on critical current characteristics of MgB2 at high temperatures

    International Nuclear Information System (INIS)

    Kiuchi, M.; Yamauchi, K.; Kurokawa, T.; Otabe, E.S.; Matsushita, T.; Okada, M.; Tanaka, K.; Kumakura, H.; Kitaguchi, H.

    2004-01-01

    Critical current density and irreversibility field were measured at various temperatures and magnetic fields for MgB 2 PIT tape specimens with different sheaths materials. The experimental results were compared with theoretical estimations using the flux creep-flow model. It is found that the hardness of sheath material indirectly affects the pinning property only through the packing density of MgB 2 . It is considered that the critical current density is mainly determined by a low value of distributed local critical current density determined by grain connectivity. On the other hand, the irreversibility field which is approximately the same among the three tapes is mainly determined by the average pinning strength

  18. First direct observations linking confined supercritical turbidity currents to their depositional architecture and facies characteristics

    Science.gov (United States)

    Hage, S.; Cartigny, M.; Hughes Clarke, J. E.; Clare, M. A.; Sumner, E.; Hubbard, S. M.; Talling, P.; Lintern, G.; Stacey, C.; Vardy, M. E.; Hunt, J.; Vendettuoli, D.; Yokokawa, M.; Hizzett, J. L.; Vellinga, A. J.; Azpiroz, M.

    2017-12-01

    Turbidity currents transfer globally significant amounts of sediment via submarine channels from the continental margin to deep submarine fans. Submarine channel inception is thought to result from erosive, supercritical turbidity currents that are common in proximal settings of the marine realm. Recent monitoring of submarine processes have provided the first measurements of supercritical turbidity currents (Hughes Clarke, 2016), demonstrating that they drive the upstream migration of crescentic bedforms in confined submarine channels. Although upstream-migrating bedforms are common in confined channels across the world's oceans, there is considerable debate over the type of deposits that they produce. It is important to understand what types of deposit record these supercritical bedforms to potentially identify them from geological archives. For the first time, we combine direct measurements from supercritical field-scale turbidity currents with the facies and depositional architecture resulting from such flows. We show how the subsurface architecture evolves in a highly active channel at Squamish submarine delta, British Columbia, Canada. Repeated upstream migration of bedforms is found to create two main deposit geometries. First, regular back-stepping beds result from flow deceleration on the slightly-inclined sides of the bedforms. Second, lens-shaped scour fills composed of massive deposits result from erosion of the back-stepping beds by subsequent turbidity currents. We relate our findings to a range of ancient outcrop studies to demonstrate that supercritical flows are common in proximal settings through the geological record. This study provides the first direct observation-based model to identify confined supercritical turbidity currents and their associated upslope-migrating bedforms in the sedimentary record. This is important for correctly identifying the proximal sites of ancient submarine channels that served as past conduits for globally

  19. A Minimum Leakage Quasi-Static RAM Bitcell

    Directory of Open Access Journals (Sweden)

    Adam Teman

    2011-05-01

    Full Text Available As SRAMs continue to grow and comprise larger percentages of the area and power consumption in advanced systems, the need to minimize static currents becomes essential. This brief presents a novel 9T Quasi-Static RAM Bitcell that provides aggressive leakage reduction and high write margins. The quasi-static operation method of this cell, based on internal feedback and leakage ratios, minimizes static power while maintaining sufficient, albeit depleted, noise margins. This paper presents the concept of the novel cell, and discusses the stability of the cell under hold, read and write operations. The cell was implemented in a low-power 40 nm TSMC process, showing as much as a 12× reduction in leakage current at typical conditions, as compared to a standard 6T or 8T bitcell at the same supply voltage. The implemented cell showed full functionality under global and local process variations at nominal and low voltages, as low as 300 mV.

  20. Indoor-Outdoor Air Leakage of Apartments and Commercial Buildings

    Energy Technology Data Exchange (ETDEWEB)

    Price, P.N.; Shehabi, A.; Chan, R.W.; Gadgil, A.J.

    2006-06-01

    We compiled and analyzed available data concerning indoor-outdoor air leakage rates and building leakiness parameters for commercial buildings and apartments. We analyzed the data, and reviewed the related literature, to determine the current state of knowledge of the statistical distribution of air exchange rates and related parameters for California buildings, and to identify significant gaps in the current knowledge and data. Very few data were found from California buildings, so we compiled data from other states and some other countries. Even when data from other developed countries were included, data were sparse and few conclusive statements were possible. Little systematic variation in building leakage with construction type, building activity type, height, size, or location within the u.s. was observed. Commercial buildings and apartments seem to be about twice as leaky as single-family houses, per unit of building envelope area. Although further work collecting and analyzing leakage data might be useful, we suggest that a more important issue may be the transport of pollutants between units in apartments and mixed-use buildings, an under-studied phenomenon that may expose occupants to high levels of pollutants such as tobacco smoke or dry cleaning fumes.

  1. Characteristics of burden resistors for high-precision DC current transducers

    CERN Document Server

    Fernqvist, G; Hudson, G; Pickering, J

    2007-01-01

    The DC current transducer (DCCT) and accompanying A/D converter determine the precision of a power converter in accelerator operation. In the LHC context this precision approaches 10-6 (1 ppm). Inside the DCCT a burden resistor is used to convert the current to an output voltage. The performance of this resistor is crucial for the accuracy, temperature behaviour, settling time and longterm drift of the DCCT. This paper reports on evaluations, a new parameter called â€ワpower coefficient” (PC) and test results from some different types of resistors available on the market.

  2. Analytical Model of Subthreshold Drain Current Characteristics of Ballistic Silicon Nanowire Transistors

    Directory of Open Access Journals (Sweden)

    Wanjie Xu

    2015-01-01

    Full Text Available A physically based subthreshold current model for silicon nanowire transistors working in the ballistic regime is developed. Based on the electric potential distribution obtained from a 2D Poisson equation and by performing some perturbation approximations for subband energy levels, an analytical model for the subthreshold drain current is obtained. The model is further used for predicting the subthreshold slopes and threshold voltages of the transistors. Our results agree well with TCAD simulation with different geometries and under different biasing conditions.

  3. Carbon leakage from a Nordic perspective

    Energy Technology Data Exchange (ETDEWEB)

    Naess-Schmidt, S.; Hansen, Martin Bo; Sand Kirk, J. [Copenhagen Economics, Copenhagen (Denmark)

    2012-02-15

    Carbon pricing is generally considered a highly effective tool in reducing carbon emissions. Putting a price on carbon provides incentives for users and producers of fossil fuels to reduce consumption and develop low carbon products and processes. However, pursuing an ambitious climate policy can lead to carbon leakage, which refers to a situation where unilateral or regional climate change policy drives the relocation of industry investments and installations, and associated emissions, to third countries. This report by Copenhagen Economics has been commissioned by the Nordic Council of Ministers to give an overview of the industries at risk of carbon leakage in the Nordic countries, and estimate the expected extent of carbon leakage from unilateral climate policies in the Nordic countries. The report also assesses available policy options that may reduce the risk of carbon leakage, such as exemptions from energy tax and exemptions from quota obligations under green certificate schemes. The key drivers of carbon leakage are identified, which include energy intensity, product differentiation, transportation costs and capital intensity. The analysis suggests that industries such as paper and pulp, iron and steel, aluminium, cement, pharmaceuticals, chemicals, and fertilizers are most at risk of carbon leakage in the Nordic manufacturing sector. (Author)

  4. Combined approach to reduced duration integrated leakage rate testing

    International Nuclear Information System (INIS)

    Galanti, P.J.

    1987-01-01

    Even though primary reactor containment allowable leakage rates are expressed in weight percent per day of contained air, engineers have been attempting to define acceptable methods to test in < 24 h as long as these tests have been performed. The reasons to reduce testing duration are obvious, because time not generating electricity is time not generating revenue for the utilities. The latest proposed revision to 10CFR50 Appendix J, concerning integrated leakage rate testing (ILRTs), was supplemented with a draft regulatory guide proposing yet another method. This paper proposes a method that includes elements of currently accepted concepts for short duration testing with a standard statistical check for criteria acceptance. Following presentation of the method, several cases are presented showing the results of these combined criteria

  5. Support calculations for management of PRISE leakage accidents

    Energy Technology Data Exchange (ETDEWEB)

    Matejovic, P.; Vranka, L. [Nuclear Power Plants Research Inst. Vuje, Trnava (Slovakia)

    1997-12-31

    Accidents involving primary-to-secondary leakage (PRISE) caused by rupture of one or a few tubes are well known design basis events in both, western and VVER NPPs. Operating experience and in-service inspections of VVER-440 units have demonstrated also the potential for large PRISE leaks in the case of the steam generator (SG) primary collector cover lift-up (Rovno NPP). Without performing any countermeasure for limitation of SG collector cover lift-up, a full opening results in PRISE leak with an equivalent diameter 107 mm. Although this accident was not considered in the original design, this event is usually analysed as DBA too. Different means are available for detection and mitigation of PRISE leakage in NPPs currently in operation (J.Bohunice V-1 and V-2) or under construction (Mochovce) in Slovakia. 8 refs.

  6. Support calculations for management of PRISE leakage accidents

    Energy Technology Data Exchange (ETDEWEB)

    Matejovic, P; Vranka, L [Nuclear Power Plants Research Inst. Vuje, Trnava (Slovakia)

    1998-12-31

    Accidents involving primary-to-secondary leakage (PRISE) caused by rupture of one or a few tubes are well known design basis events in both, western and VVER NPPs. Operating experience and in-service inspections of VVER-440 units have demonstrated also the potential for large PRISE leaks in the case of the steam generator (SG) primary collector cover lift-up (Rovno NPP). Without performing any countermeasure for limitation of SG collector cover lift-up, a full opening results in PRISE leak with an equivalent diameter 107 mm. Although this accident was not considered in the original design, this event is usually analysed as DBA too. Different means are available for detection and mitigation of PRISE leakage in NPPs currently in operation (J.Bohunice V-1 and V-2) or under construction (Mochovce) in Slovakia. 8 refs.

  7. Practical implementation of a higher order transverse leakage approximation

    International Nuclear Information System (INIS)

    Prinsloo, Rian H.; Tomašević

    2011-01-01

    Transverse integrated nodal diffusion methods currently represent the standard in full core neutronic simulation. The primary shortcoming in this approach, be it via the Analytic Nodal Method or Nodal Expansion Method, is the utilization of the quadratic transverse leakage approximation. This approach, although proven to work well for typical LWR problems, is not consistent with the formulation of nodal methods and can cause accuracy and convergence problems. In this work an improved, consistent quadratic leakage approximation is formulated, which derives from the class of higher order nodal methods developed some years ago. In this new approach, only information relevant to describing the transverse leak- age terms in the zero-order nodal equations are obtained from the higher order formalism. The method yields accuracy comparable to full higher order methods, but does not suffer from the same computational burden which these methods typically incur. (author)

  8. Characteristics of PEMFC operating at high current density with low external humidification

    International Nuclear Information System (INIS)

    Fan, Linhao; Zhang, Guobin; Jiao, Kui

    2017-01-01

    Highlights: • PEMFC with low humidity and high current density is studied by numerical simulation. • At high current density, water production lowers external humidification requirement. • A steady anode circulation status without external humidification is demonstrated. • The corresponding detailed internal water transfer path in the PEMFC is illustrated. • Counter-flow is superior to co-flow at low anode external humidification. - Abstract: A three-dimensional multiphase numerical model for proton exchange membrane fuel cell (PEMFC) is developed to study the fuel cell performance and water transport properties with low external humidification. The results show that the sufficient external humidification is necessary to prevent the polymer electrolyte dehydration at low current density, while at high current density, the water produced in cathode CL is enough to humidify the polymer electrolyte instead of external humidification by flowing back and forth between the anode and cathode across the membrane. Furthermore, a steady anode circulation status without external humidification is demonstrated in this study, of which the detailed internal water transfer path is also illustrated. Additionally, it is also found that the water balance under the counter-flow arrangement is superior to co-flow at low anode external humidification.

  9. Women and Men in the United States: March 2002. Population Characteristics. Current Population Reports.

    Science.gov (United States)

    Spraggins, Renee E.

    This report compares the status of women and men on such measures as age, marital status, educational attainment, occupation, income, and poverty status. Findings are based on data collected by the Census Bureau in the Annual Demographic Supplement to the March 2002 Current Population Survey. Overall, women slightly outnumber men in the total…

  10. Educational Attainment in the United States: 2009. Population Characteristics. Current Population Reports. P20-566

    Science.gov (United States)

    Ryan, Camille L.; Siebens, Julie

    2012-01-01

    This report provides a portrait of educational attainment in the United States based on data collected in the 2009 American Community Survey (ACS) and the 2005-2009 ACS 5-year estimates. It also uses data from the Annual Social and Economic Supplement (ASEC) to the Current Population Survey (CPS) collected in 2009 and earlier, as well as monthly…

  11. America's Families and Living Arrangements: 2003. Population Characteristics. Current Population Reports. P20-553

    Science.gov (United States)

    Fields, Jason

    2004-01-01

    The data in this report is from the Annual Social and Economic Supplement (ASEC) to the 2003 Current Population Survey (CPS). The population represented (the population universe) in the ASEC is the civilian non institutionalized population living in the United States. Members of the Armed Forces living off post or with their families on post are…

  12. Educational Attainment in the United States: 2003. Population Characteristics. Current Population Reports. P20-550

    Science.gov (United States)

    Stoops, Nicole

    2004-01-01

    This report provides information on basic educational trends and attainment levels across many segments of the population. The findings are based on data collected in the 2003 Annual Social and Economic Supplement (ASEC) to the Current Population Survey (CPS) and refer to the population 25 years and over unless otherwise specified. The population…

  13. School Enrollment in the United States: 2006. Population Characteristics. Current Population Reports

    Science.gov (United States)

    Davis, Jessica W.; Bauman, Kurt J.

    2008-01-01

    This report discusses school enrollment levels and trends in the population aged 3 and older based on data collected in 2006 by the U.S. Census Bureau in the American Community Survey (ACS) and the Current Population Survey (CPS). Historically, the CPS has been the only data source used to produce school enrollment reports. This is the first…

  14. Analytical form of current-voltage characteristic of parallel-plane, cylindrical and spherical ionization chambers with homogeneous ionization

    Energy Technology Data Exchange (ETDEWEB)

    Stoyanov, D G [Faculty of Engineering and Pedagogy in Sliven, Technical University of Sofia, 59, Bourgasko Shaussee Blvd, 8800 Sliven (Bulgaria)

    2007-11-15

    The elementary processes taking place in the formation of charged particles and their flow in parallel-plane, cylindrical and spherical geometry cases of ionization chamber are considered. On the basis of particles and charges balance a differential equation describing the distribution of current densities in the ionization chamber volume is obtained. As a result of the differential equation solution an analytical form of the current-voltage characteristic of an ionization chamber with homogeneous ionization is obtained. For the parallel-plane case comparision with experimental data is performed.

  15. Analytical form of current-voltage characteristic of parallel-plane, cylindrical and spherical ionization chambers with homogeneous ionization

    International Nuclear Information System (INIS)

    Stoyanov, D G

    2007-01-01

    The elementary processes taking place in the formation of charged particles and their flow in parallel-plane, cylindrical and spherical geometry cases of ionization chamber are considered. On the basis of particles and charges balance a differential equation describing the distribution of current densities in the ionization chamber volume is obtained. As a result of the differential equation solution an analytical form of the current-voltage characteristic of an ionization chamber with homogeneous ionization is obtained. For the parallel-plane case comparision with experimental data is performed

  16. Simulation of current-voltage characteristics of a MOS structure considering the tunnel transport of carriers in semiconductor

    International Nuclear Information System (INIS)

    Vexler, M I

    2006-01-01

    The effect of a tunnel charge transport in the near-surface region of silicon on the electrical characteristics of MOS structures with a 2-3 nm insulator layer is studied theoretically. An equilibrium condition for the substrate is assumed. The cases of an Al and polySi gate are considered. The possibility of a 'double' (in Si and through SiO 2 ) tunnelling expands the energy range of transported particles, which increases one of the components of the total tunnel current. The proposed model allows for the improved simulation of gate current in MOSFETs, which is especially important for highly-doped substrates

  17. The role of current characteristics of the arc evaporator in formation of the surface metal-coating composite

    International Nuclear Information System (INIS)

    Plikhunov, V V; Petrov, L M; Grigorovich, K V

    2016-01-01

    The influence of current characteristics of the vacuum arc evaporator on the interaction process of plasma streams with the surface under treatment during generation of the physicochemical properties of the formed metal-coating composite is considered. It is shown that the interaction of plasma streams with the processed surface provides surface heating, defects elimination, change in energy properties, and mass transfer of plasma stream elements activating surface diffusion processes whose intensity is evaluated by the arc current magnitude and location of the processed surface relative to the cathode axis. (paper)

  18. A retrospective analysis of endoscopic treatment outcomes in patients with postoperative bile leakage.

    Science.gov (United States)

    Sayar, Suleyman; Olmez, Sehmus; Avcioglu, Ufuk; Tenlik, Ilyas; Saritas, Bunyamin; Ozdil, Kamil; Altiparmak, Emin; Ozaslan, Ersan

    2016-01-01

    Bile leakage, while rare, can be a complication seen after cholecystectomy. It may also occur after hepatic or biliary surgical procedures. Etiology may be underlying pathology or surgical complication. Endoscopic retrograde cholangiopancreatography (ERCP) can play major role in diagnosis and treatment of bile leakage. Present study was a retrospective analysis of outcomes of ERCP procedure in patients with bile leakage. Patients who underwent ERCP for bile leakage after surgery between 2008 and 2012 were included in the study. Etiology, clinical and radiological characteristics, and endoscopic treatment outcomes were recorded and analyzed. Total of 31 patients (10 male, 21 female) were included in the study. ERCP was performed for bile leakage after cholecystectomy in 20 patients, after hydatid cyst operation in 10 patients, and after hepatic resection in 1 patient. Clinical signs and symptoms of bile leakage included abdominal pain, bile drainage from percutaneous drain, peritonitis, jaundice, and bilioma. Twelve (60%) patients were treated with endoscopic sphincterotomy (ES) and nasobiliary drainage (NBD) catheter, 7 patients (35%) were treated with ES and biliary stent (BS), and 1 patient (5%) was treated with ES alone. Treatment efficiency was 100% in bile leakage cases after cholecystectomy. Ten (32%) cases of hydatid cyst surgery had subsequent cystobiliary fistula. Of these patients, 7 were treated with ES and NBD, 2 were treated with ES and BS, and 1 patient (8%) with ES alone. Treatment was successful in 90% of these cases. ERCP is an effective method to diagnose and treat bile leakage. Endoscopic treatment of postoperative bile leakage should be individualized based on etiological and other factors, such as accompanying fistula.

  19. Air Leakage and Air Transfer Between Garage and Living Space

    Energy Technology Data Exchange (ETDEWEB)

    Rudd, Armin [Building Science Corporation, Westford, MA (United States)

    2014-09-01

    This research project focused on evaluation of air transfer between the garage and living space in a single-family detached home constructed by a production homebuilder in compliance with the 2009 International Residential Code and the 2009 International Energy Conservation Code. The project gathered important information about the performance of whole-building ventilation systems and garage ventilation systems as they relate to minimizing flow of contaminated air from garage to living space. A series of 25 multi-point fan pressurization tests and additional zone pressure diagnostic testing characterized the garage and house air leakage, the garage-to-house air leakage, and garage and house pressure relationships to each other and to outdoors using automated fan pressurization and pressure monitoring techniques. While the relative characteristics of this house may not represent the entire population of new construction configurations and air tightness levels (house and garage) throughout the country, the technical approach was conservative and should reasonably extend the usefulness of the results to a large spectrum of house configurations from this set of parametric tests in this one house. Based on the results of this testing, the two-step garage-to-house air leakage test protocol described above is recommended where whole-house exhaust ventilation is employed.

  20. RETRAN code analysis of Tsuruga-2 plant chemical volume control system (CVCS) reactor coolant leakage incident

    International Nuclear Information System (INIS)

    Kawai, Hiroshi

    2002-01-01

    In the Chemical Volume Control System (CVCS) reactor primary coolant leakage incident, which occurred in Tsuruga-2 (4-loop PWR, 3,423 MWt, 1,160 MWe) on July 12, 1999, it took about 14 hours before the leakage isolation. The delayed leakage isolation and a large amount of leakage have become a social concern. Effective procedure modification was studied. Three betterments were proposed based on a qualitative analysis to reduce the pressure and temperature of the primary loop as fast as possible by the current plant facilities while maintaining enough subcooling of the primary loop. I analyzed the incident with RETRAN code in order to quantitatively evaluate the leakage reduction when these betterments are adopted. This paper is very new because it created a typical analysis method for PWR plant behavior during plant shutdown procedure which conventional RETRAN transient analyses rarely dealt with. Also the event time is very long. To carry out this analysis successfully, I devised new models such as an Residual Heat Removal System (RHR) model etc. and simplified parts of the conventional model. Based on the analysis results, I confirmed that leakage can be reduced by about 30% by adopting these betterments. Then the Japan Atomic Power Company (JAPC) modified the operational procedure for reactor primary coolant leakage events adopting these betterments. (author)

  1. The Current Landscape of US Pediatric Anesthesiologists: Demographic Characteristics and Geographic Distribution.

    Science.gov (United States)

    Muffly, Matthew K; Muffly, Tyler M; Weterings, Robbie; Singleton, Mark; Honkanen, Anita

    2016-07-01

    There is no comprehensive database of pediatric anesthesiologists, their demographic characteristics, or geographic location in the United States. We endeavored to create a comprehensive database of pediatric anesthesiologists by merging individuals identified as US pediatric anesthesiologists by the American Board of Anesthesiology, National Provider Identifier registry, Healthgrades.com database, and the Society for Pediatric Anesthesia membership list as of November 5, 2015. Professorial rank was accessed via the Association of American Medical Colleges and other online sources. Descriptive statistics characterized pediatric anesthesiologists' demographics. Pediatric anesthesiologists' locations at the city and state level were geocoded and mapped with the use of ArcGIS Desktop 10.1 mapping software (Redlands, CA). We identified 4048 pediatric anesthesiologists in the United States, which is approximately 8.8% of the physician anesthesiology workforce (n = 46,000). The median age of pediatric anesthesiologists was 49 years (interquartile range, 40-57 years), and the majority (56.4%) were men. Approximately two-thirds of identified pediatric anesthesiologists were subspecialty board certified in pediatric anesthesiology, and 33% of pediatric anesthesiologists had an identified academic affiliation. There is substantial heterogeneity in the geographic distribution of pediatric anesthesiologists by state and US Census Division with urban clustering. This description of pediatric anesthesiologists' demographic characteristics and geographic distribution fills an important gap in our understanding of pediatric anesthesia systems of care.

  2. Current-voltage characteristics of a gas field ion source with a supertip

    International Nuclear Information System (INIS)

    Boerret, R.; Boehringer, K.; Kalbitzer, S.

    1990-01-01

    The field ionisation properties of a supertip, a fine protrusion on top of a regular emitter, have been studied for hydrogen and the lighter rare gases. The parameter set included tip temperature, tip radius, gas temperature and gas pressure. Due to the local field enhancement at the supertip site, angular current intensities of 35 μA sr -1 and values of brightness up to 10 10 A cm -2 sr -1 have been obtained near the optimum temperature of the gas-tip system. At temperatures below this, the gas density reaches values typical for a condensed phase. In geometrical proportion, the regular tip area appears to serve as a gas supply for the supertip current. (author)

  3. Neural and psychological characteristics of college students with alcoholic parents differ depending on current alcohol use.

    Science.gov (United States)

    Brown-Rice, Kathleen A; Scholl, Jamie L; Fercho, Kelene A; Pearson, Kami; Kallsen, Noah A; Davies, Gareth E; Ehli, Erik A; Olson, Seth; Schweinle, Amy; Baugh, Lee A; Forster, Gina L

    2018-02-02

    A significant proportion of college students are adult children of an alcoholic parent (ACoA), which can confer greater risk of depression, poor self-esteem, alcohol and drug problems, and greater levels of college attrition. However, some ACoA are resilient to these negative outcomes. The goal of this study was to better understand the psychobiological factors that distinguish resilient and vulnerable college-aged ACoAs. To do so, scholastic performance and psychological health were measured in ACoA college students not engaged in hazardous alcohol use (resilient) and those currently engaged in hazardous alcohol use (vulnerable). Neural activity (as measured by functional magnetic resonance imaging) in response to performing working memory and emotion-based tasks were assessed. Furthermore, the frequency of polymorphisms in candidate genes associated with substance use, risk taking and stress reactivity were compared between the two ACoA groups. College ACoAs currently engaged in hazardous alcohol use reported more anxiety, depression and posttraumatic stress symptoms, and increased risky nicotine and marijuana use as compared to ACoAs resistant to problem alcohol use. ACoA college students with current problem alcohol showed greater activity of the middle frontal gyrus and reduced activation of the posterior cingulate in response to visual working memory and emotional processing tasks, which may relate to increased anxiety and problem alcohol and drug behaviors. Furthermore, polymorphisms of cholinergic receptor and the serotonin transporter genes also appear to contribute a role in problem alcohol use in ACoAs. Overall, findings point to several important psychobiological variables that distinguish ACoAs based on their current alcohol use that may be used in the future for early intervention. Copyright © 2017 Elsevier Inc. All rights reserved.

  4. Characteristics of a superconducting magnet using a persistent current for a 110 GHz gyrotron

    International Nuclear Information System (INIS)

    Maebara, Sunao; Kasugai, Atsushi; Sakamoto, Keishi; Tsuneoka, Masaki; Imai, Tsuyoshi

    1996-03-01

    A superconducting magnet (SCM) using a persistent current for a 110 GHz gyrotron was developed to reduce liquid-helium loss, the boiled-off rate of 0.13 liter/hour was attained in a persistent current operation. It shows that the continuous operation for 50 days is capable without additional liquid-helium supply. Moreover, the 3040 liter in a year is used for a gyrotron test during five months and for the maintenance during seven months and liquid-helium savings of 65% was successfully demonstrated. The SCM is capable to excite the maximum magnetic field of 5.0 T in the persistent current mode. A mirror ratio between resonant cavity and magnetron injection gun (MIG) is 20 for operating the main coils in the persistent mode, since cavity coils and gun coils are connected in series. Auxiliary coils are equipped independently to control the mirror ratio, the mirror ratio of 13.6 - 37.0 at the 110 GHz is available. A two-stage refrigerator using helium gas was also installed and made liquid-nitrogen for cooling thermal shield of 80 K free. By developing this new type SCM, the number of routine works was drastically decreased in one time per 22-50 days, while routine works of a few times per week was needed up to now. (author)

  5. Characteristic Of Induction Magnetic Field On The Laboratory Scale Superconducting Fault Current Limiter Circuit

    International Nuclear Information System (INIS)

    Adi, Wisnu Ari; Sukirman, E.; Didin, S.W.; Yustinus, P.M.; Siregar, Riswal H.

    2004-01-01

    Model construction of the laboratory scale superconducting fault current limiter circuit (SFCL) has been performed. The SFCL is fault current limiter and used as electric network security. It mainly consists of a copper coil, a superconducting ring and an iron core that are concentrically arranged. The SFCL circuit is essentially a transformer where the secondary windings are being replaced by the ring of YBa 2 Cu 3 O 7-x superconductor (HTS). The ring has critical transition temperature Tc = 92 K and critical current Ic = 3.61 A. Characterization of the SFCL circuit is simulated by ANSYS version 5.4 software. The SFCL circuit consists of load and transformer impedances. The results show that the inductions of magnet field flux in the iron core of primer windings and ring disappear to one other before fault state. It means that impedance of the transformer is zero. After the condition a superconductivity behavior of the ring is disappear so that the impedance of the transformer becomes very high. From this experiment, we concluded that the SFCL circuit could work normally if the resultant of induction magnetic in the iron core (transformer) is zero

  6. MODELING OF TECHNICAL CHANNELS OF INFORMATION LEAKAGE AT DISTRIBUTED CONTROL OBJECTS

    Directory of Open Access Journals (Sweden)

    Aleksander Vladimirovich Karpov

    2018-05-01

    Full Text Available The significant increase in requirements for distributed control objects’ functioning can’t be realized only at the expense of the widening and strengthening of security control measures. The first step in ensuring the information security at such objects is the analysis of the conditions of their functioning and modeling of technical channels of information leakage. The development of models of such channels is essentially the only method of complete study of their opportunities and it is pointed toward receiving quantitative assessments of the safe operation of compound objects. The evaluation data are necessary to make a decision on the degree of the information security from a leak according to the current criterion. The existing models are developed for the standard concentrated objects and allow to evaluate the level of information security from a leak on each of channels separately, what involves the significant increase in the required protective resource and time of assessment of information security on an object in general. The article deals with a logical-and-probabilistic method of a security assessment of structurally-compound objects. The model of a security leak on the distributed control objects is cited as an example. It is recommended to use a software package of an automated structurally-logistical modeling of compound systems, which allows to evaluate risk of information leakage in the loudspeaker. A possibility of information leakage by technical channels is evaluated and such differential characteristics of the safe operation of the distributed control objects as positive and negative contributions of the initiating events and conditions, which cause a leak are calculated. Purpose. The aim is a quantitative assessment of data risk, which is necessary for justifying the rational composition of organizational and technical protection measures, as well as a variant of the structure of the information security system from a

  7. Improvement in operational characteristics of KEPCO’s line-commutation-type superconducting hybrid fault current limiter

    Science.gov (United States)

    Yim, S.-W.; Park, B.-C.; Jeong, Y.-T.; Kim, Y.-J.; Yang, S.-E.; Kim, W.-S.; Kim, H.-R.; Du, H.-I.

    2013-01-01

    A 22.9 kV class hybrid fault current limiter (FCL) developed by Korea Electric Power Corporation and LS Industrial Systems in 2006 operates using the line commutation mechanism and begins to limit the fault current after the first half-cycle. The first peak of the fault current is available for protective coordination in the power system. However, it also produces a large electromagnetic force and imposes a huge stress on power facilities such as the main transformer and gas-insulated switchgear. In this study, we improved the operational characteristics of the hybrid FCL in order to reduce the first peak of the fault current. While maintaining the structure of the hybrid FCL system, we developed a superconducting module that detects and limits the fault current during the first half-cycle. To maintain the protective coordination capacity, the hybrid FCL was designed to reduce the first peak value of the fault current by up to approximately 30%. The superconducting module was also designed to produce a minimum AC loss, generating a small, uniform magnetic field distribution during normal operation. Performance tests confirmed that when applied to the hybrid FCL, the superconducting module showed successful current limiting operation without any damage.

  8. Improvement in operational characteristics of KEPCO’s line-commutation-type superconducting hybrid fault current limiter

    International Nuclear Information System (INIS)

    Yim, S.-W.; Park, B.-C.; Jeong, Y.-T.; Kim, Y.-J.; Yang, S.-E.; Kim, W.-S.; Kim, H.-R.; Du, H.-I.

    2013-01-01

    Highlights: ► A line-commutation type hybrid FCL was modified for 1st peak current limitation. ► A superconducting module of current limitation and fault detection was fabricated. ► The superconducting module was applied to a hybrid FCL system and tested. ► 7.4 kA p fault current was limited to 4.3 kA p at the first-half cycle by the FCL. -- Abstract: A 22.9 kV class hybrid fault current limiter (FCL) developed by Korea Electric Power Corporation and LS Industrial Systems in 2006 operates using the line commutation mechanism and begins to limit the fault current after the first half-cycle. The first peak of the fault current is available for protective coordination in the power system. However, it also produces a large electromagnetic force and imposes a huge stress on power facilities such as the main transformer and gas-insulated switchgear. In this study, we improved the operational characteristics of the hybrid FCL in order to reduce the first peak of the fault current. While maintaining the structure of the hybrid FCL system, we developed a superconducting module that detects and limits the fault current during the first half-cycle. To maintain the protective coordination capacity, the hybrid FCL was designed to reduce the first peak value of the fault current by up to approximately 30%. The superconducting module was also designed to produce a minimum AC loss, generating a small, uniform magnetic field distribution during normal operation. Performance tests confirmed that when applied to the hybrid FCL, the superconducting module showed successful current limiting operation without any damage

  9. Pickering unit 1 containment leakage characterization

    International Nuclear Information System (INIS)

    Zakaib, G.D.

    1994-01-01

    Results of the design pressure test carried out on Pickering Reactor Building number 1 during late 1992 showed that the leakage rate of the building was close to the safety analysis value of 2.7% contained mass per hour at the design pressure of 41.4 kPa(g) and was significantly higher than that reported after the previous test conducted in the spring of 1987. This unexpected finding initiated the longest and the most comprehensive containment leakage investigation ever undertaken by Ontario Hydro. A thorough investigation of leakage behaviour by repeated testing, inspections, leak search and analysis was launched. The extensive leak search effort included items such as: leak source detection by soap solution application, use of ultrasonic detectors, fogging and tracer gas techniques, systematic systems isolation, thermal imaging of the exterior, and quantification of leak sites by flowmeter and bagging. Using a specially designed volumetric technique, the root cause of the problem was finally confirmed as being due to 'pressure dependent laminar leakage' through the hairline cracks in the dome concrete. Structural analysis indicated that the thermal gradients and pressure loading combined to cause the cracking early in the structure's operating history and that overall structural integrity has not been compromised. Leakage rate analysis using a new fluid mechanics model augmented by the effect of thermal strains indicated that the leakage could be significantly less under certain transient temperature gradient conditions. Several options for repairing the dome were considered by a multidisciplinary team and it was finally decided to apply a specially engineered multilayer elastomeric coating to the exterior concrete surface. When the unit was re-tested in October 1993, a dramatic ten-fold improvement in leakage rate (down to 0.25%/h at design pressure) was observed. This is lower than even the commissioning results and comparable to the performance of newer units

  10. Spectral and temporal characteristics of target current and electromagnetic pulse induced by nanosecond laser ablation

    Czech Academy of Sciences Publication Activity Database

    Krása, Josef; De Marco, Massimo; Cikhardt, Jakub; Pfeifer, Miroslav; Velyhan, Andriy; Klír, Daniel; Řezáč, Karel; Limpouch, J.; Krouský, Eduard; Dostál, Jan; Ullschmied, Jiří; Dudžák, Roman

    2017-01-01

    Roč. 59, č. 6 (2017), 1-8, č. článku 065007. ISSN 0741-3335 R&D Projects: GA MŠk EF15_008/0000162; GA ČR GA16-07036S EU Projects: European Commission(XE) 654148 - LASERLAB-EUROPE Grant - others:ELI Beamlines(XE) CZ.02.1.01/0.0/0.0/15_008/0000162 Institutional support: RVO:68378271 ; RVO:61389021 Keywords : laser-produced plasma * target current * electromagnetic pulse Subject RIV: BL - Plasma and Gas Discharge Physics OBOR OECD: Fluids and plasma physics (including surface physics) Impact factor: 2.392, year: 2016

  11. Study of recovery characteristics of 2nd generation HTS tapes with different stabilizers for resistive type superconducting fault current limiters

    International Nuclear Information System (INIS)

    Sheng, Jie; Zeng, Weina; Ma, Jun; Yao, Zhihao; Li, Zhuyong; Jin, Zhijian; Hong, Zhiyong

    2016-01-01

    Highlights: • Three methods of measuring the recovery time of HTS tapes are compared. • Four tapes with different stabilizers were tested to compare their recovery characteristics. • The HTS tapes with thinner stabilizers have better recovery characteristics. • Encapsulation makes the recovery characteristics of HTS tapes worse. • The results can be reference of the re-reclosed operation time interval. - Abstract: The resistive type superconducting fault current limiter (SFCL) is one of the most important superconducting power applications nowadays. As known, this type of SFCL is settled directly in the power transmission line. When a short fault happens, the temperature of the superconductors in the SFCL will increase sharply due to the huge generated heat. This means the superconductors need time to recover the superconducting properties and be ready for the next short fault. So the recovery characteristics become one of the most crucial features of the resistive type SFCL. In this paper, several different kinds of measuring methods are presented to calculate the recovery time of the HTS tapes, and comparison of these methods is also carried out by a standard test. On basis of this, samples with different kinds of stabilizers are used to explore the influence of stabilizer on their recovery characteristics. In addition, the influence of the encapsulation technology is also discussed in this paper.

  12. How to attribute market leakage to CDM projects

    NARCIS (Netherlands)

    Vöhringer, F.; Kuosmanen, T.K.; Dellink, R.B.

    2006-01-01

    Economic studies suggest that market leakage rates of greenhouse gas abatement can reach the two-digit percentage range. Although the Marrakesh Accords require Clean Development Mechanism (CDM) projects to account for leakage, most projects neglect market leakage. Insufficient leakage accounting is

  13. First wide-angle view of channelized turbidity currents links migrating cyclic steps to flow characteristics

    Science.gov (United States)

    Hughes Clarke, John E.

    2016-01-01

    Field observations of turbidity currents remain scarce, and thus there is continued debate about their internal structure and how they modify underlying bedforms. Here, I present the results of a new imaging method that examines multiple surge-like turbidity currents within a delta front channel, as they pass over crescent-shaped bedforms. Seven discrete flows over a 2-h period vary in speed from 0.5 to 3.0 ms−1. Only flows that exhibit a distinct acoustically attenuating layer at the base, appear to cause bedform migration. That layer thickens abruptly downstream of the bottom of the lee slope of the bedform, and the upper surface of the layer fluctuates rapidly at that point. The basal layer is inferred to reflect a strong near-bed gradient in density and the thickening is interpreted as a hydraulic jump. These results represent field-scale flow observations in support of a cyclic step origin of crescent-shaped bedforms. PMID:27283503

  14. Measurements of Accelerator-Produced Leakage Neutron and Photon Transmission through Concrete

    International Nuclear Information System (INIS)

    2002-01-01

    Optimum shielding of the radiation from particle accelerators requires knowledge of the attenuation characteristics of the shielding material. The most common material for shielding this radiation is concrete, which can be made using various materials of different densities as aggregates. These different concrete mixes can have very different attenuation characteristics. Information about the attenuation of leakage photons and neutrons in ordinary and heavy concrete is, however, very limited. To increase our knowledge and understanding of the radiation attenuation in concrete of various compositions, we have performed measurements of the transmission of leakage radiation, photons and neutrons, from a Varian Clinac 2100C medical linear accelerator operating at maximum electron energies of 6 and 18 MeV. We have also calculated, using Monte Carlo techniques, the leakage neutron spectra and its transmission through concrete. The results of these measurements and calculations extend the information currently available for designing shielding for medical electron accelerators. Photon transmission characteristics depend more on the manufacturer of the concrete than on the atomic composition. A possible cause for this effect is a non-uniform distribution of the high-density aggregate, typically iron, in the concrete matrix. Errors in estimated transmission of photons can exceed a factor of three, depending on barrier thickness, if attenuation in high-density concrete is simply scaled from that of normal density concrete. We found that neutron transmission through the high-density concretes can be estimated most reasonably and conservatively by using the linear tenth-value layer of normal concrete if specific values of the tenth-value layer of the high-density concrete are not known. The reason for this is that the neutron transmission depends primarily on the hydrogen content of the concrete, which does not significantly depend on concrete density. Errors of factors of two

  15. Design and construction of constant voltage and current regulated source with proper characteristics to be used in electronics laboratory designs

    International Nuclear Information System (INIS)

    Peon A, R.

    1978-01-01

    A regulated direct current feeding source was designed for the Nuclear Energy National Institute Electronics Labortory, with the following characteristics: a) voltage input 105-130V a.c. 50-60 Hz; b) voltage output 0.40 V d.c.; c) output current 0-2 Amp d.c.; d) load regulation 0.001%; e) line regulation 0.001%; f) ripple and noise 200 μ Vpp; g) temperature interval 3-60 0 C; h) stability 0.5%; i) output impedance as voltage source 0.01 ohms; j) transient response 50 μ seg. Besides of operating normally, that is as voltage source or current-source through the front controls, the source can be used and interconnected with one or other compatible sources (autoseries, autoparallel and programmed reference). The source will cost 70,000 pesos approximately. (author)

  16. Influence of semiconductor barrier tunneling on the current-voltage characteristics of tunnel metal-oxide-semiconductor diodes

    DEFF Research Database (Denmark)

    Nielsen, Otto M.

    1983-01-01

    of multistep tunneling recombination current and injected minority carrier diffusion current. This can explain the observed values of the diode quality factor n. The results also show that the voltage drop across the oxide Vox is increased with increased NA, with the result that the lowering of the minority...... carrier diode current Jmin is greater than in the usual theory. The conclusion drawn is that the increase in Vox and lowering of Jmin is due to multistep tunneling of majority carriers through the semiconductor barrier. Journal of Applied Physics is copyrighted by The American Institute of Physics.......Current–voltage characteristics have been examined for Al–SiO2–pSi diodes with an interfacial oxide thickness of delta[approximately-equal-to]20 Å. The diodes were fabricated on and oriented substrates with an impurity concentration in the range of NA=1014–1016 cm−3. The results show that for low...

  17. Study of the leakage current of clinical dosimeters for teletherapy

    International Nuclear Information System (INIS)

    Damatto, Willian B.; Santos, Gelson P.; Potiens, Maria da Penha A.; Caldas, Linda V.E.; Vivolo, Vitor

    2009-01-01

    This work demonstrates the importance of quality control of clinical dosemeters and therefore the equipment for radiotherapy treatment, exhibiting the necessary care related to answers and sensibilities and the possible defects of the clinical assembly

  18. Leakage current measurements on pixelated CdZnTe detectors

    NARCIS (Netherlands)

    Dirks, B.; Blondel, C.; Daly, F.; Gevin, O.; Limousin, O.; Lugiez, F.

    2006-01-01

    In the field of the R&D of a new generation hard X-ray cameras for space applications we focus on the use of pixelated CdTe or CdZnTe semiconductor detectors. They are covered with 64 (0.9×0.9 mm2) or 256 (0.5×0.5 mm2) pixels, surrounded by a guard ring and operate in the energy ranging from several

  19. The Social and Consumer Standards and Guarantees in Ukraine: the Current Structural and Dynamic Characteristics

    Directory of Open Access Journals (Sweden)

    Kolesov Oleksandr S.

    2017-04-01

    Full Text Available The article attempts to generalize the theoretical approaches to the social guarantees and standards as economic categories. The classification of social guarantees is provided. The dynamic parameters for development of the social and consumer standards adopted in Ukraine were considered. An evaluation of the real poverty level under the system of criteria was carried out. The inconsistency of methods for the poverty evaluation adopted by the Ministry of Social Policy of Ukraine and contradiction of its individual indicators has been indicated. The structural characteristics of the population’s income have been determined. The relevance of the existing social guarantees to their real value in today’s economic conditions have been analyzed. Tendencies of falling of the welfare level of population, resulting in a decline in the consumer demand and a narrowing of the domestic market for goods and services, have been identified. The need to take measures to stimulate small businesses, to overcome corruption, and to deregulate the economy has been indicated.

  20. Analysis on fault current limiting and recovery characteristics of a flux-lock type SFCL with an isolated transformer

    International Nuclear Information System (INIS)

    Ko, Seckcheol; Lim, Sung-Hun; Han, Tae-Hee

    2013-01-01

    Highlights: ► Countermeasure to reduce the power burden of HTSC element consisting of the flux-lock type SFCL was studied. ► The power burden of HTSC element could be decreased by using the isolated transformer. ► The SFCL designed with the additive polarity winding could be confirmed to cause less power burden of the HTSC element. -- Abstract: The flux-lock type superconducting fault current limiter (SFCL) can quickly limit the fault current shortly after the short circuit occurs and recover the superconducting state after the fault removes. However, the superconducting element comprising the flux-lock type SFCL can be destructed when the high fault current passes through the SFCL. Therefore, the countermeasure to control the fault current and protect the superconducting element is required. In this paper, the flux-lock type SFCL with an isolated transformer, which consists of two parallel connected coils on an iron core and the isolated transformer connected in series with one of two coils, was proposed and the short-circuit experimental device to analyze the fault current limiting and the recovery characteristics of the flux-lock type SFCL with the isolated transformer were constructed. Through the short-circuit tests, the flux-lock type SFCL with the isolated transformer was confirmed to perform more effective fault current limiting and recovery operation compared to the flux-lock type SFCL without the isolated transformer from the viewpoint of the quench occurrence and the recovery time of the SFCL

  1. Determination of leakage areas in nuclear piping

    International Nuclear Information System (INIS)

    Keim, E.

    1997-01-01

    For the design and operation of nuclear power plants the Leak-Before-Break (LBB) behavior of a piping component has to be shown. This means that the length of a crack resulting in a leak is smaller than the critical crack length and that the leak is safely detectable by a suitable monitoring system. The LBB-concept of Siemens/KWU is based on computer codes for the evaluation of critical crack lengths, crack openings, leakage areas and leakage rates, developed by Siemens/KWU. In the experience with the leak rate program is described while this paper deals with the computation of crack openings and leakage areas of longitudinal and circumferential cracks by means of fracture mechanics. The leakage areas are determined by the integration of the crack openings along the crack front, considering plasticity and geometrical effects. They are evaluated with respect to minimum values for the design of leak detection systems, and maximum values for controlling jet and reaction forces. By means of fracture mechanics LBB for subcritical cracks has to be shown and the calculation of leakage areas is the basis for quantitatively determining the discharge rate of leaking subcritical through-wall cracks. The analytical approach and its validation will be presented for two examples of complex structures. The first one is a pipe branch containing a circumferential crack and the second one is a pipe bend with a longitudinal crack

  2. Sustainable management of leakage from wastewater pipelines.

    Science.gov (United States)

    DeSilva, D; Burn, S; Tjandraatmadja, G; Moglia, M; Davis, P; Wolf, L; Held, I; Vollertsen, J; Williams, W; Hafskjold, L

    2005-01-01

    Wastewater pipeline leakage is an emerging concern in Europe, especially with regards to the potential effect of leaking effluent on groundwater contamination and the effects infiltration has on the management of sewer reticulation systems. This paper describes efforts by Australia, in association with several European partners, towards the development of decision support tools to prioritize proactive rehabilitation of wastewater pipe networks to account for leakage. In the fundamental models for the decision support system, leakage is viewed as a function of pipeline system deterioration. The models rely on soil type identification across the service area to determine the aggressiveness of the pipe environment and for division of the area into zones based on pipe properties and operational conditions. By understanding the interaction between pipe materials, operating conditions, and the pipe environment in the mechanisms leading to pipe deterioration, the models allow the prediction of leakage rates in different zones across a network. The decision support system utilizes these models to predict the condition of pipes in individual zones, and to optimize the utilization of rehabilitation resources by targeting the areas with the highest leakage rates.

  3. Determination of leakage areas in nuclear piping

    Energy Technology Data Exchange (ETDEWEB)

    Keim, E. [Siemens/KWU, Erlangen (Germany)

    1997-04-01

    For the design and operation of nuclear power plants the Leak-Before-Break (LBB) behavior of a piping component has to be shown. This means that the length of a crack resulting in a leak is smaller than the critical crack length and that the leak is safely detectable by a suitable monitoring system. The LBB-concept of Siemens/KWU is based on computer codes for the evaluation of critical crack lengths, crack openings, leakage areas and leakage rates, developed by Siemens/KWU. In the experience with the leak rate program is described while this paper deals with the computation of crack openings and leakage areas of longitudinal and circumferential cracks by means of fracture mechanics. The leakage areas are determined by the integration of the crack openings along the crack front, considering plasticity and geometrical effects. They are evaluated with respect to minimum values for the design of leak detection systems, and maximum values for controlling jet and reaction forces. By means of fracture mechanics LBB for subcritical cracks has to be shown and the calculation of leakage areas is the basis for quantitatively determining the discharge rate of leaking subcritical through-wall cracks. The analytical approach and its validation will be presented for two examples of complex structures. The first one is a pipe branch containing a circumferential crack and the second one is a pipe bend with a longitudinal crack.

  4. Current-Voltage Characteristics of Bi-dithiolbenzene in Parallel Arrangement

    International Nuclear Information System (INIS)

    Boudjella, Aissa

    2011-01-01

    The low voltage conductance of interacting two 1,4-dithiolbenzene (DTB) molecules is investigated. The simulation results show that the electron transport can be controlled either by changing the Fermi level position E f or modifying its inter-molecular spacing d. Molecular assembly system with close interaction between DTB units, affects significantly the conductance. In addition, the position of the Fermi plays an important role in determining the current flow. Moreover, it is important to note that E f affects not only the threshold voltage V th , but also the saturation voltage V sat . When E f approaches the LUMO energy level, V th decreases, while V sat increases. To conclude, the threshold voltage and the saturation voltage depend on the Fermi level position and the inter-molecular spacing.

  5. The Angola Current: Flow and hydrographic characteristics as observed at 11°S

    Science.gov (United States)

    Kopte, R.; Brandt, P.; Dengler, M.; Tchipalanga, P. C. M.; Macuéria, M.; Ostrowski, M.

    2017-02-01

    The eastern boundary circulation off the coast of Angola has been described only sparsely to date, although it is a key element in the understanding of the highly productive tropical marine ecosystem off Angola. Here, we report for the first time direct velocity observations of the Angola Current (AC) at ˜11°S collected between July 2013 and October 2015 in the depth range from 45 to 450 m. The measurements reveal an alongshore flow that is dominated by intraseasonal to seasonal variability with periodically alternating southward and northward velocities in the range of ±40 cm/s. During the observation period, a weak southward mean flow of 5-8 cm/s at 50 m depth is observed, with the southward current extending down to about 200 m depth. Corresponding mean southward transport of the AC is estimated to be 0.32 ± 0.046 Sv. An extensive set of hydrographic measurements is used to investigate the thermal structure and seasonality in the hydrography of the eastern boundary circulation. Within the depth range of the AC, the superposition of annual and semiannual harmonics explains a significant part of the total variability, although salinity in the near surface layer appears to be also impacted by year-to-year variability and/or short-term freshening events. In the central water layer, temperature and salinity on isopycnals vary only weakly on seasonal to annual time scales. The available data set is further used to evaluate different reanalysis products particularly emphasizing the ocean's role in coupled climate model SST biases in the Eastern Tropical Atlantic.

  6. A current assessment of diversity characteristics and perceptions of their importance in the surgical workforce.

    Science.gov (United States)

    French, Judith C; O'Rourke, Colin; Walsh, R Matthew

    2014-11-01

    Diversity in the workforce is vital to successful businesses. Healthcare in general has suffered from a lack of cultural competence, which is the ability to successfully interact with individuals from diverse backgrounds. In order to eliminate discrimination and build a diverse workforce, physicians' perceptions and importance of diversity need to be measured. A 25-item, anonymous, online questionnaire was created, and a cross-sectional survey was performed. The instrument consisted of demographic and Likert-style questions which attempted to determine the participants' perceptions of the current level of diversity in their specialty and their perceived importance of particular diversity categories. Over 1,000 responses were received from US-based physicians across all specialties and levels of training. Statistically significant differences existed between surgical and nonsurgical specialties with regard to gender, prior work experience, and political identity. In the surgical workforce, there is significant perceived homogeneity regarding gender/sexual identity. Surgical respondents also deemed gender/sexual identity diversity to be less important than respondents from medical specialties. Surgeons and surgical trainees are less diverse than their medical colleagues, both by demographics and self-acknowledgement. The long-term impact and potential barriers to resolve these differences in diversity require further investigation.

  7. Current vegetation characteristics within tree-kill zones of F- and H-Areas

    Energy Technology Data Exchange (ETDEWEB)

    Nelson, E.A.; Irwin, J.E.

    1994-04-01

    Vegetation of two wetland areas previously adversely affected by outcropping groundwater was characterized to evaluate the type and extent of revegetation. When the damage first became evident in the late 1970s and early 1980s the areas were examined and described to try to establish the cause of the extensive tree mortality. The F- and H-Area seepage basins above the wetland areas received waste products from the separation areas beginning in 1955. The operation, estimated loading, and current status of the basins were summarized by Killian et al. Analysis of soil and water at the affected seeplines where the tree-kill was occurring confirmed that the surface water was strongly influenced by constituents of the F- and H-Area seepage basins. While no single cause of the forest mortality was defined, alterations in the hydrology and siltation patterns, pH changes, increased conductivity, and increased levels of sodium, nitrogen compounds, and aluminum were believed to be interacting to cause the mortality.

  8. The Effect of Image Potential on the Current-Voltage Characteristics of a Ferritin-layer

    Directory of Open Access Journals (Sweden)

    Eunjung Bang

    2010-11-01

    Full Text Available Considering for the concept of power storage systems, such as those used to supply power to microelectronic devices, ferritins have aroused a lot of interests for applications in bioelectrochemical devices. And electron transfer rates from the proteins to electrode surface are key determinants of overall performance and efficiency of the ferritin-based devices. Here we have investigated the electron transport mechanism of ferritin layer which was immobilized on an Au electrode. The current-voltage (I-V curves are obtained by a conductive atomic force microscope (c-AFM as a function of contact area between AFM tip and the ferritin layer. In the low voltage region, I-V curves are affected by both Fowler-Nordheim tunneling and image force. On the other hand, the experimental results are consistent with a Simmons model in a high voltage region, indicating that, as the voltage increases, the image potential has a dominant effect on the electron transport mechanism. These results are attributed to the film-like character of the ferritin layer, which generates an image potential to lower the barrier height in proportion to the voltage increment.

  9. Current vegetation characteristics within tree-kill zones of F- and H-Areas

    International Nuclear Information System (INIS)

    Nelson, E.A.; Irwin, J.E.

    1994-04-01

    Vegetation of two wetland areas previously adversely affected by outcropping groundwater was characterized to evaluate the type and extent of revegetation. When the damage first became evident in the late 1970s and early 1980s the areas were examined and described to try to establish the cause of the extensive tree mortality. The F- and H-Area seepage basins above the wetland areas received waste products from the separation areas beginning in 1955. The operation, estimated loading, and current status of the basins were summarized by Killian et al. Analysis of soil and water at the affected seeplines where the tree-kill was occurring confirmed that the surface water was strongly influenced by constituents of the F- and H-Area seepage basins. While no single cause of the forest mortality was defined, alterations in the hydrology and siltation patterns, pH changes, increased conductivity, and increased levels of sodium, nitrogen compounds, and aluminum were believed to be interacting to cause the mortality

  10. Component external leakage and rupture frequency estimates

    International Nuclear Information System (INIS)

    Eide, S.A.; Khericha, S.T.; Calley, M.B.; Johnson, D.A.; Marteeny, M.L.

    1991-11-01

    In order to perform detailed internal flooding risk analyses of nuclear power plants, external leakage and rupture frequencies are needed for various types of components - piping, valves, pumps, flanges, and others. However, there appears to be no up-to-date, comprehensive source for such frequency estimates. This report attempts to fill that void. Based on a comprehensive search of Licensee Event Reports (LERs) contained in Nuclear Power Experience (NPE), and estimates of component populations and exposure times, component external leakage and rupture frequencies were generated. The remainder of this report covers the specifies of the NPE search for external leakage and rupture events, analysis of the data, a comparison with frequency estimates from other sources, and a discussion of the results

  11. Leakage-Resilient Circuits without Computational Assumptions

    DEFF Research Database (Denmark)

    Dziembowski, Stefan; Faust, Sebastian

    2012-01-01

    Physical cryptographic devices inadvertently leak information through numerous side-channels. Such leakage is exploited by so-called side-channel attacks, which often allow for a complete security breache. A recent trend in cryptography is to propose formal models to incorporate leakage...... on computational assumptions, our results are purely information-theoretic. In particular, we do not make use of public key encryption, which was required in all previous works...... into the model and to construct schemes that are provably secure within them. We design a general compiler that transforms any cryptographic scheme, e.g., a block-cipher, into a functionally equivalent scheme which is resilient to any continual leakage provided that the following three requirements are satisfied...

  12. Markovian Processes for Quantitative Information Leakage

    DEFF Research Database (Denmark)

    Biondi, Fabrizio

    Quantification of information leakage is a successful approach for evaluating the security of a system. It models the system to be analyzed as a channel with the secret as the input and an output as observable by the attacker as the output, and applies information theory to quantify the amount...... and randomized processes with Markovian models and to compute their information leakage for a very general model of attacker. We present the QUAIL tool that automates such analysis and is able to compute the information leakage of an imperative WHILE language. Finally, we show how to use QUAIL to analyze some...... of information transmitted through such channel, thus effectively quantifying how many bits of the secret can be inferred by the attacker by analyzing the system’s output. Channels are usually encoded as matrices of conditional probabilities, known as channel matrices. Such matrices grow exponentially...

  13. Reactor coolant pressure boundary leakage detection system

    International Nuclear Information System (INIS)

    Dissing, E.; Svansson, L.

    1980-01-01

    This study deals with a system for monitoring the leakage of reactor coolant. This system is based primarily on the detection of the 13 N content in the containment atmosphere. 13 N is produced from the oxygen of the reactor water via the recoil proton nuclear process Hl+016/yields/ 13 N+ 4 He. The generation is therefore independent of fuel element leakage and of the corrosion product content in the water. It is solely related to the neutron flux level in the reactor core. Typical figures for the equilibrium 13 N concentration in the containment atmosphere following a 4 kg/minute coolant leakage are 5 kBq m/sup -3/ and 7 kBq m/sup -3/ for BWR and PWR respectively. These levels are readily measured with a 10 liter Ge(Li) flow detector assembly operated at elevated pressure. 8 refs

  14. Reactor coolant pressure boundary leakage detection system

    International Nuclear Information System (INIS)

    Dissing, E.; Svansson, L.

    1980-01-01

    This study deals with a system for monitoring the leakage of reactor coolant. This system is based primarily on the detection of the N13 content in the containment atmosphere. N13 is produced from the oxygen of the reactor water via the recoil proton nuclear process Hl+016/yields/Nl3+He4. The generation is therefore independent of fuel element leakage and of the corrosion product content in the water. It is solely related to the neutron flux level in the reactor core. Typical figures for the equilibrium N13 concentration in the containment atmosphere following a 4 kg/minute coolant leakage are 5 kBq m/sup -3/ and 7 kBq m/sup -3/ for BWR and PWR respectively. These levels are readily measured with a 10 liter Ge(Li) flow detector assembly operated at elevated pressure. 8 refs

  15. Reactor coolant pressure boundary leakage detection system

    International Nuclear Information System (INIS)

    Dissing, E.; Svansson, L.

    1979-08-01

    The present paper deals with a system for monitoring the leakage of reactor coolant. This system is based primarily on the detection of the N13 content in the containment atmosphere. N13 is produced from the oxygen of the reactor water via the recoil proton nuclear process H1+016 → N13+He4. The generation is therefore independent of fuel element leakage and of the corrosion product content in the water. It is solely related to the neutron flux level in the reactor core. Typical figures for the equilibrium N13 concentration in the containment atmosphere following a 4 kg/minute coolant leakage are 5 kBq m -3 and 7 kBq m -3 for BWR and PWR respectively. These levels are readily measured with a 10 liter Ge (Li) flow detector assembly operated at elevated pressure. (Auth.)

  16. Characteristics of small young lunar impact craters focusing on current production and degradation on the Moon

    Science.gov (United States)

    Kereszturi, Akos; Steinmann, Vilmos

    2017-11-01

    Analysing the size-frequency distribution of very small lunar craters (sized below 100 m including ones below 10 m) using LROC images, spatial density and related age estimations were calculated for mare and terra terrains. Altogether 1.55 km2 area was surveyed composed of 0.1-0.2 km2 units, counting 2784 craters. The maximal areal density was present at the 4-8 m diameter range at every analysed terrain suggesting the bombardment is areally relatively homogeneous. Analysing the similarities and differences between various areas, the mare terrains look about two times older than the terra terrains using ages ranged between 13 and 20 Ma for mare, 4-6 Ma for terra terrains. Substantial fluctuation (min: 936 craters/km2, max: 2495 craters/km2) was observed without obvious source of nearby secondaries or fresh ejecta blanket produced fresh crater. Randomness analysis and visual inspection also suggested no secondary craters or ejecta blanket from fresh impact could contribute substantially in the observed heterogeneity of the areal distribution of small craters - thus distant secondaries or even other, poorly known resurfacing processes should be considered in the future. The difference between the terra/mare ages might come only partly from the easier identification of small craters on smooth mare terrains, as the differences were observed for larger (30-60 m diameter) craters too. Difference in the target hardness could more contribute in this effect. It was possible to separate two groups of small craters based on their appearance: a rimmed thus less eroded, and a rimless thus more eroded one. As the separate usage of different morphology groups of craters for age estimation at the same area is not justifiable, this was used only for comparison. The SFD curves of these two groups showed characteristic differences: the steepness of the fresh craters' SFD curves are similar to each other and were larger than the isochrones. The eroded craters' SFD curves also resemble

  17. Characteristic Analysis and Fault-Tolerant Control of Circulating Current for Modular Multilevel Converters under Sub-Module Faults

    Directory of Open Access Journals (Sweden)

    Wen Wu

    2017-11-01

    Full Text Available A modular multilevel converter (MMC is considered to be a promising topology for medium- or high-power applications. However, a significantly increased amount of sub-modules (SMs in each arm also increase the risk of failures. Focusing on the fault-tolerant operation issue for the MMC under SM faults, the operation characteristics of MMC with different numbers of faulty SMs in the arms are analyzed and summarized in this paper. Based on the characteristics, a novel circulating current-suppressing (CCS fault-tolerant control strategy comprised of a basic control unit (BCU and virtual resistance compensation control unit (VRCCU in two parts is proposed, which has three main features: (i it can suppress the multi-different frequency components of the circulating current under different SM fault types simultaneously; (ii it can help fast limiting of the transient fault current caused at the faulty SM bypassed moment; and (iii it does not need extra communication systems to acquire the information of the number of faulty SMs. Moreover, by analyzing the stability performance of the proposed controller using the Root-Locus criterion, the election principle of the value of virtual resistance is revealed. Finally, the efficiency of the control strategy is confirmed with the simulation and experiment studies under different fault conditions.

  18. Quantifying information leakage of randomized protocols

    DEFF Research Database (Denmark)

    Biondi, Fabrizio; Legay, Axel; Malacaria, Pasquale

    2015-01-01

    The quantification of information leakage provides a quantitative evaluation of the security of a system. We propose the usage of Markovian processes to model deterministic and probabilistic systems. By using a methodology generalizing the lattice of information approach we model refined attackers...... capable to observe the internal behavior of the system, and quantify the information leakage of such systems. We also use our method to obtain an algorithm for the computation of channel capacity from our Markovian models. Finally, we show how to use the method to analyze timed and non-timed attacks...

  19. Quantifying Information Leakage of Randomized Protocols

    DEFF Research Database (Denmark)

    Biondi, Fabrizio; Wasowski, Andrzej; Legay, Axel

    2013-01-01

    The quantification of information leakage provides a quantitative evaluation of the security of a system. We propose the usage of Markovian processes to model and analyze the information leakage of deterministic and probabilistic systems. We show that this method generalizes the lattice...... of information approach and is a natural framework for modeling refined attackers capable to observe the internal behavior of the system. We also use our method to obtain an algorithm for the computation of channel capacity from our Markovian models. Finally, we show how to use the method to analyze timed...

  20. Experimental evaluation of clinical colon anastomotic leakage

    DEFF Research Database (Denmark)

    Pommergaard, Hans-Christian

    2014-01-01

    , whereas the eight-suture control anastomoses had a 0% leakage rate. Furthermore, the use of absorbable suture together with voluntarily ingested Temgesic in chocolate spread as analgesic regimen were feasible. This model may be used to test the leakage reducing potential of coating materials. STUDY 3...... experimental, in which designs were not comparable and many results were contradictory. In a clinical study, a non-significant benefit of fibrin sealant was found. Based on the available clinical and experimental data it was concluded that the fibrin-based sealants, such as Tisseel and Tachosil...

  1. The Leakage determination on corrosion fretting machine

    International Nuclear Information System (INIS)

    Sriyono; Satmoko, Ari; Hafid, Abdul; Febrianto; Prasetio, Joko; Abtokhi; Sumarno, Edy; Handoyo, Ismu; Hidayati, Nur Rahmah; Histori

    1998-01-01

    Fretting machine is an experimental loop to learn fretting corrosion phenomena wich is caused by loading and vibration. On the steam generator, one of the corrosion process that's occurred, it can be caused by vibration between tubes and bending material. Because of high flow rate inside the tube, the high frequency vibration will appeared so it can make the corrosion on bending material more faster. This process can be simulate by fretting machine. This machine has already damage because of leakage. So it will be repaired by dismantling, radiography testing and redrawing. from the result of radiography, the leakage is caused by cracking on bellows seals of the dynamic main support

  2. Current-sharing temperature characteristics of ITER central solenoid insert coil

    International Nuclear Information System (INIS)

    Nabara, Yoshihiro; Saito, Toru; Suwa, Tomone; Ozeki, Hidemasa; Nunoya, Yoshihiko; Takahashi, Yoshikazu; Kawano, Katsumi; Isono, Takaaki

    2016-01-01

    The performance of the ITER central solenoid insert (CSI) conductor was tested in 2015. The current-sharing temperatures (T cs ) were measured over 16,000 electromagnetic cycles, including three thermal cycles between 4.2 K and room temperature. T cs under the initial magnetization (IM) condition (13 T, 40 kA) of the CSI conductor not only increased, but also decreased between 6.71 and 6.84 K against cycling; then T cs became almost constant at 6.74 K. Thus T cs under the IM condition, was approximately 1.5 K higher than the specification of 5.2 K throughout the test. The slope of the hoop strain (ε hoop ) on the CSI conductor against the electromagnetic force was 1.55×10 -4 % m/kN (in ε hoop > 0) and 1.39×10 -4 % m/kN (in ε hoop < 0). Taking the effect of ε hoop into account, the T cs of the CSI under the SULTAN simulated condition (11.5 T, 45.1 kA) was equivalent to that of the SULTAN test after around 10,000 cycles. Before around 10,000 cycles, especially at the initial charge, the T cs of the SULTAN test was lower than that of the CSI test. It is assumed that the hoop strain in the CSI test accelerated a strain relaxation, which increased the T cs from the initial charge. When the strain fully relaxed and T cs stopped increasing after around 10,000 cycles, the T cs of the SULTAN test became equivalent to that of the CSI test. Given this perspective, the CSI test and SULTAN test were consistent. In ε hoop > 0, the absolute value of the effective strain (ε eff ) of the CSI test decreased (i.e., T cs increased) against the electromagnetic force (F r ) because the effect of the positive ε hoop on the increase in T cs exceeded the effect of the F r on the decrease in T cs . The line of ε eff -ε hoop of the CSI test against F r was nearly symmetric about the y-axis (F r =0). Comparing the ε eff -ε hoop of the CSI test and the ε eff of the SULTAN test, the slopes of the strain against F r were almost the same between the CSI test and SULTAN test before

  3. Effects of cavity on leakage loss in straight-through labyrinth seals

    International Nuclear Information System (INIS)

    Zhao, W; Nielsen, T K; Billdal, J T

    2010-01-01

    Labyrinth seals are widely used in rotating fluid machinery, due to its low-cost, simplicity and reliability. A straight-through labyrinth seal consists of a clearance between the stator and rotor, and sometimes cavities which are included on the stator or the rotator side. In this type of seals, making cavities are an effective way to convert turbulence kinetic energy into thermal energy by forming turbulence vortices, thereby reducing pressure difference and leakage flow. In this paper, the effect of cavities on leakage loss in straight-through labyrinth seals are studied by changing cavity dimensions such as depth and length, cavity number and cavity location. The influences of unilateral cavities and bilateral cavities on the leakage loss in straight-through labyrinth seals are also compared. The fluid flow characteristics through straight-through labyrinth seals were obtained by using viscous flow analysis along with a standard k-ωturbulence model. The cavity dimensions and cavity numbers have significant effects on the leakage as well as on the flow pattern in the seal. The bilateral cavity has better leakage performance than the unilateral cavity when cavity dimensions are identical. However, the cavity location shows no significant influences on the leakage flow.

  4. Inventory and characteristics of current and projected low-level radioactive materials and waste in the United States

    International Nuclear Information System (INIS)

    Bisaria, A.; Bugos, R.G.; Pope, R.B.; Salmon, R.; Storch, S.N.; Lester, P.B.

    1994-01-01

    The Integrated Data Base (IDB), under US Department of Energy (DOE) funding and guidance, provides an annual update of compiled data on current and projected inventories and characteristics of DOE and commercially owned radioactive wastes. The data base addresses also the inventories of DOE and commercial spent fuel. These data are derived from reliable information from government sources, open literature, technical reports, and direct contacts. The radioactive materials considered are spent nuclear fuel, high-level waste (HLW), transuranic (TRU) waste, low-level waste (LLW), commercial uranium mill tailings, environmental restoration wastes, and mixed-LLW. This paper primarily focuses on LLW inventory and characterization

  5. Inhomogeneous barrier height effect on the current-voltage characteristics of an Au/n-InP Schottky diode

    Science.gov (United States)

    Zeghdar, Kamal; Dehimi, Lakhdar; Saadoune, Achour; Sengouga, Nouredine

    2015-12-01

    We report the current-voltage (I-V) characteristics of the Schottky diode (Au/n-InP) as a function of temperature. The SILVACO-TCAD numerical simulator is used to calculate the I-V characteristic in the temperature range of 280-400 K. This is to study the effect of temperature on the I-V curves and assess the main parameters that characterize the Schottky diode such as the ideality factor, the height of the barrier and the series resistance. The I-V characteristics are analyzed on the basis of standard thermionic emission (TE) theory and the inhomogeneous barrier heights (BHs) assuming a Gaussian distribution. It is shown that the ideality factor decreases while the barrier height increases with increasing temperature, on the basis of TE theory. Furthermore, the homogeneous BH value of approximately 0.524 eV for the device has been obtained from the linear relationship between the temperature-dependent experimentally effective BHs and ideality factors. The modified Richardson plot, according to the inhomogeneity of the BHs, has a good linearity over the temperature range. The evaluated Richardson constant A* was 10.32 A·cm-2·K-2, which is close to the theoretical value of 9.4 A·cm-2·K-2 for n-InP. The temperature dependence of the I-V characteristics of the Au/n-InP Schottky diode have been successfully explained on the basis of the thermionic emission (TE) mechanism with a Gaussian distribution of the Schottky barrier heights (SBHs). Simulated I-V characteristics are in good agreement with the measurements [Korucu D, Mammadov T S. J Optoelectronics Advanced Materials, 2012, 14: 41]. The barrier height obtained using Gaussian Schottky barrier distribution is 0.52 eV, which is about half the band gap of InP.

  6. Development of Multichannel Eddy Current Testing Instrument

    International Nuclear Information System (INIS)

    Lee, Hee Jong; Cho, Chan Hee; Nam, Min Woo; Yoon, Byung Sik; Yoo, Hyun Joo

    2010-01-01

    Four main techniques of electromagnetic testing are used for commercial applications: eddy current testing, alternating current field testing, magnetic flux leakage testing and remote field testing. Eddy current testing is a nondestructive evaluation method, which makes eddy current flow on a specimen by applying driving pulse to eddy current probe coil, by using eddy current testing device, and makes the change of eddy current which is dependently caused by flaws, material characteristics, testing condition, receiving through eddy current, and analyzes material properties, flaws, status on the specimen. Application of EC instrumentation varies widely in industry from the identification of metal heat treatment to the inspection of steam generator tubing in nuclear power plants. In this study, we have designed multichannel EC instrument which can be applicable to the NDE of the tube in heat exchanger for electric power facility, chemistry, and military industry, and finally confirmed the proper function of EC instrumentation

  7. The current-voltage characteristic and potential oscillations of a double layer in a triple plasma device

    International Nuclear Information System (INIS)

    Carpenter, R.T.; Torven, S.

    1986-07-01

    The properties of a strong double layer in a current circuit with a capacitance and an inductance are investigated in a triple plasma device. The double layer gives rise to a region of negative differential resistance in the current-voltage characteristic of the device, and this gives non-linear oscillations in the current and the potential drop over the double layer (PhiDL). For a sufficiently large circuit inductance PhiDL reaches an amplitude given by the induced voltage (-LdI/dt) which is much larger than the circuit EMF due to the rapid current decrease when PhiDL increases. A variable potential minimum exists in the plasma on the low potential side of the double layer, and the depth of the minimum increases when PhiDL increases. An increasing fraction of the electrons incident at the double layer are then reflected, and this is found to be the main process giving rise to the negative differential resistance. A qualitative model for the variation of the minimum potential with PhiDL is also proposed. It is based on the condition that the minimum potential must adjust itself self-consistentely so that quasi-neutrality is maintained in the plasma region where the minimum is assumed. (authors)

  8. Tunneling effects in the current-voltage characteristics of high-efficiency GaAs solar cells

    Science.gov (United States)

    Kachare, R.; Anspaugh, B. E.; Garlick, G. F. J.

    1988-01-01

    Evidence is that tunneling via states in the forbidden gap is the dominant source of excess current in the dark current-voltage (I-V) characteristics of high-efficiency DMCVD grown Al(x)Ga(1-x)As/GaAs(x is equal to or greater than 0.85) solar cells. The dark forward and reverse I-V measurements were made on several solar cells, for the first time, at temperatures between 193 and 301 K. Low-voltage reverse-bias I-V data of a number of cells give a thermal activation energy for excess current of 0.026 + or - 0.005 eV, which corresponds to the carbon impurity in GaAs. However, other energy levels between 0.02 eV and 0.04 eV were observed in some cells which may correspond to impurity levels introduced by Cu, Si, Ge, or Cd. The forward-bias excess current is mainly due to carrier tunneling between localized levels created in the space-charge layer by impurities such as carbon, which are incorporated during the solar cell growth process. A model is suggested to explain the results.

  9. Integral leakage rate tests of containments

    International Nuclear Information System (INIS)

    Engel, M.; Siefart, E.; Walter, R.

    1978-01-01

    A method is presented for the integral leakage rate tests of containments. This method, used in conjunction with statistical methods, provides reliable information on the tightness of the containment. This method forms the basis of DIN 25436/KTA 3405. (orig.) [de

  10. The concept of leakage in threat assessment.

    Science.gov (United States)

    Meloy, J Reid; O'Toole, Mary Ellen

    2011-01-01

    Leakage in the context of threat assessment is the communication to a third party of an intent to do harm to a target. Third parties are usually other people, but the means of communication vary, and include letters, diaries, journals, blogs, videos on the internet, emails, voice mails, and other social media forms of transmission. Leakage is a type of warning behavior that typically infers a preoccupation with the target, and may signal the research, planning, and implementation of an attack. Nomothetic data suggest that leakage occurs in a majority of cases of attacks on and assassinations of public figures, adult mass murders, adolescent mass murders, and school or campus shootings: very low-frequency, but catastrophic acts of intended and targeted violence. Idiographic or case data illustrate the various permutations of leakage. We discuss the operational importance of the concept, place it in the context of other warning behaviors, emphasize the need for further research, and outline risk management strategies for the mitigation of such acts of violence in both law enforcement and clinical mental health settings. Copyright © 2011 John Wiley & Sons, Ltd.

  11. Secret rate - Privacy leakage in biometric systems

    NARCIS (Netherlands)

    Ignatenko, T.; Willems, F.M.J.

    2009-01-01

    Ahlswede and Csiszár [1993] introduced the concept of secret sharing. In their source model two terminals observe two correlated sequences. It is the objective of the terminals to form a common secret by interchanging a public message (helper data) in such a way that the secrecy leakage is

  12. Radiation leakage in nuclear ship 'MUTSU'

    International Nuclear Information System (INIS)

    Ando, Yoshio; Miyasaka, Shun-ichi; Takeuchi, Kiyoshi.

    1975-01-01

    Associated with the radiation leakage in MUTSU occurred in September 1974, this report reviews the shielding design for MUTSU, radiation measurement and inspection activities by a survey group, and 2 dimensional analysis on the behavior of fast neutrons to shielding based on Ssub(N) codes. In the first part, the purpose and the structure of the primary and the secondary shields of MUTSU are briefly illustrated. In the second part, the progress of the series of affairs is explained, starting from zero power criticality experiment, through discovery of radiation leakage in output-increasing test, sending of a survey group for various measurement and inspection, and finally to the conclusion drawn by the survey group. In the third part, various numerical analyses performed to investigate into the leakage are illustrated with their results. The transport codes used were ANISN, TWOTRAN, SPAN, and PALLAS-2DCY. As a result of those inspection and calculation, it was found that the radiation leakage was due to fast neutrons coming through the gap between the reactor vessel and the primary shield. (Aoki, K.)

  13. Solving the problem of valve stem leakage

    International Nuclear Information System (INIS)

    Dixon, D.F.

    1976-01-01

    Engineering solutions to valve stem leakage, in systems carrying expensive heavy water under pressure, have progressed from changing packing brands (failure) to leak collection (partial success) to elimination of small packed valves and an improved valve packing strategy involving stable packing materials, live Belleville spring-loading of packing, and issuance of a detailed stuffing box specification (success). (E.C.B.)

  14. Zero leakage quantization scheme for biometric verification

    NARCIS (Netherlands)

    Groot, de J.A.; Linnartz, J.P.M.G.

    2011-01-01

    Biometrics gain increasing interest as a solution for many security issues, but privacy risks exist in case we do not protect the stored templates well. This paper presents a new verification scheme, which protects the secrets of the enrolled users. We will show that zero leakage is achieved if

  15. Abdominal Drainage and Amylase Measurement for Detection of Leakage After Gastrectomy for Gastric Cancer.

    Science.gov (United States)

    Schots, Judith P M; Luyer, Misha D P; Nieuwenhuijzen, Grard A P

    2018-05-07

    To investigate the value of daily measurement of drain amylase for detecting leakage in gastric cancer surgery. This was a retrospective analysis including all patients who underwent a gastrectomy for gastric cancer. From January 2013 until December 2015, an intra-abdominal drain was routinely placed. Drain amylase was measured daily. Receiver operator characteristic curves were created to assess the ability of amylase to predict leakage. Sensitivity, specificity, and negative and positive predictive value of amylase in drain fluid were determined. Leakage of the gastrojejunostomy or esophagojejunostomy, enteroenterostomy, duodenal stump, or pancreas was diagnosed by CT scan, endoscopy, or during re-operation. From January 2016 until April 2017, no drain was inserted. Surgical outcome and postoperative complications were compared between both groups. Median drain amylase concentrations were higher for each postoperative day in patients with leakage. The optimal cutoff value was 1000 IU/L (sensitivity 77.8%, specificity 98.2%, negative predictive value 96.6%). Sixty-seven consecutive procedures were performed with a drain and 40 procedures without. No differences in group characteristics were observed except for gender. Fourteen patients (13.1%) had a leakage. The incidence and severity of leakage were not different between the patients with and without a drain. There was no significant difference in time to diagnosis (1 vs. 0 days; p 0.34), mortality rate (7.5 vs. 2.5%; p 0.41), and median length of hospital stay (9 days in both groups; p 0.46). Daily amylase measurement in drain fluid does not influence the early recognition and management of leakage in gastric cancer surgery.

  16. Feasibility of Autonomous Monitoring of CO2 Leakage in Aquifers: Results From Controlled Laboratory Experiments

    Science.gov (United States)

    Versteeg, R.; Leger, E.; Dafflon, B.

    2016-12-01

    Geologic sequestration of CO2 is one of the primary proposed approaches for reducing total atmospheric CO2 concentrations. MVAA (Monitoring, Verification, Accounting and Assessment) of CO2 sequestration is an essential part of the geologic CO2 sequestration cycle. MVAA activities need to meet multiple operational, regulatory and environmental objectives, including ensuring the protection of underground sources of drinking water. Anticipated negative consequences of CO2 leakage into groundwater, besides possible brine contamination and release of gaseous CO2, include a significant increase of dissolved CO2 into shallow groundwater systems, which will decrease groundwater pH and can potentially mobilize naturally occurring trace metals and ions that are commonly absorbed to or contained in sediments. Autonomous electrical geophysical monitoring in aquifers has the potential of allowing for rapid and automated detection of CO2 leakage. However, while the feasibility of such monitoring has been demonstrated by a number of different field experiments, automated interpretation of complex electrical resistivity data requires the development of quantitative relationships between complex electrical resistivity signatures and dissolved CO2 in the aquifer resulting from leakage Under a DOE SBIR funded effort we performed multiple tank scale experiments in which we investigated complex electrical resistivity signatures associated with dissolved CO2 plumes in saturated sediments. We also investigated the feasibility of distinguishing CO2 leakage signatures from signatures associated with other processes such as salt water movement, temperature variations and other variations in chemical or physical conditions. In addition to these experiments we also numerically modeled the tank experiments. These experiments showed that (a) we can distinguish CO2 leakage signatures from other signatures, (b) CO2 leakage signatures have a consistent characteristic, (c) laboratory experiments

  17. Statistical characteristic in time-domain of direct current corona-generated audible noise from conductor in corona cage

    Energy Technology Data Exchange (ETDEWEB)

    Li, Xuebao, E-mail: lxb08357x@ncepu.edu.cn; Cui, Xiang, E-mail: x.cui@ncepu.edu.cn; Ma, Wenzuo; Bian, Xingming; Wang, Donglai [State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources, North China Electric Power University, Beijing 102206 (China); Lu, Tiebing, E-mail: tiebinglu@ncepu.edu.cn [Beijing Key Laboratory of High Voltage and EMC, North China Electric Power University, Beijing 102206 (China); Hiziroglu, Huseyin [Department of Electrical and Computer Engineering, Kettering University, Flint, Michigan 48504 (United States)

    2016-03-15

    The corona-generated audible noise (AN) has become one of decisive factors in the design of high voltage direct current (HVDC) transmission lines. The AN from transmission lines can be attributed to sound pressure pulses which are generated by the multiple corona sources formed on the conductor, i.e., transmission lines. In this paper, a detailed time-domain characteristics of the sound pressure pulses, which are generated by the DC corona discharges formed over the surfaces of a stranded conductors, are investigated systematically in a laboratory settings using a corona cage structure. The amplitude of sound pressure pulse and its time intervals are extracted by observing a direct correlation between corona current pulses and corona-generated sound pressure pulses. Based on the statistical characteristics, a stochastic model is presented for simulating the sound pressure pulses due to DC corona discharges occurring on conductors. The proposed stochastic model is validated by comparing the calculated and measured A-weighted sound pressure level (SPL). The proposed model is then used to analyze the influence of the pulse amplitudes and pulse rate on the SPL. Furthermore, a mathematical relationship is found between the SPL and conductor diameter, electric field, and radial distance.

  18. Statistical characteristic in time-domain of direct current corona-generated audible noise from conductor in corona cage

    Science.gov (United States)

    Li, Xuebao; Cui, Xiang; Lu, Tiebing; Ma, Wenzuo; Bian, Xingming; Wang, Donglai; Hiziroglu, Huseyin

    2016-03-01

    The corona-generated audible noise (AN) has become one of decisive factors in the design of high voltage direct current (HVDC) transmission lines. The AN from transmission lines can be attributed to sound pressure pulses which are generated by the multiple corona sources formed on the conductor, i.e., transmission lines. In this paper, a detailed time-domain characteristics of the sound pressure pulses, which are generated by the DC corona discharges formed over the surfaces of a stranded conductors, are investigated systematically in a laboratory settings using a corona cage structure. The amplitude of sound pressure pulse and its time intervals are extracted by observing a direct correlation between corona current pulses and corona-generated sound pressure pulses. Based on the statistical characteristics, a stochastic model is presented for simulating the sound pressure pulses due to DC corona discharges occurring on conductors. The proposed stochastic model is validated by comparing the calculated and measured A-weighted sound pressure level (SPL). The proposed model is then used to analyze the influence of the pulse amplitudes and pulse rate on the SPL. Furthermore, a mathematical relationship is found between the SPL and conductor diameter, electric field, and radial distance.

  19. The effect of using sun tracking systems on the voltage-current characteristics and power generation of flat plate photovoltaics

    International Nuclear Information System (INIS)

    Abdallah, Salah

    2004-01-01

    An experimental study was performed to investigate the effect of using different types of sun tracking systems on the voltage-current characteristics and electrical power generation at the output of flat plate photovoltaics (FPPV). Four electromechanical sun tracking systems, two axes, one axis vertical, one axis east-west and one axis north-south, were designed and constructed for the purpose of investigating the effect of tracking on the electrical values, current, voltage and power, according to the different loads (variable resistance). The above mentioned variables were measured at the output of the FPPV and compared with those on a fixed surface. The results indicated that the volt-ampere characteristics on the tracking surfaces were significantly greater than that on a fixed surface. There were increases of electrical power gain up to 43.87%, 37.53%, 34.43% and 15.69% for the two axes, east-west, vertical and north-south tracking, respectively, as compared with the fixed surface inclined 32 deg. to the south in Amman, Jordan

  20. The influence of the current intensity on the damping characteristics for a magneto-rheological damper of passenger car

    Science.gov (United States)

    Dobre, A.; Andreescu, C. N.; Stan, C.

    2016-08-01

    Due to their simplicity and controllability, adaptive dampers became very popular in automotive engineering industry, especially in the passenger cars industry, in spite of technological obstacles inherent and the high cost of the magnetic fluid. “MagneRide” is the first technology which uses smart fluids in the shock absorbers of the vehicles adaptive suspensions. Since the discovery of the magneto-rheological effect there is a consistent progress regarding the control algorithms and hardware part itself. These magneto-rheological devices have a major potential which can be explored in various fields of applications. At present many companies make researches for the improvement of the response time and for obtaining a better response at low frequency and amplitude of the body car oscillations. The main objective of this paper is to determine the damping characteristic of a magnetorheological shock absorber of a passenger car. The authors aim to observe how to modify the damping characteristic by changing the intensity of the electric current. The experimental researches have being carried out on a complex and modern test bench especially built for testing shock absorbers, in order to compare the damping characteristic of the classical damper with the magneto-rheological damper.