WorldWideScience

Sample records for lateral p-n junction

  1. Photocurrent generation in lateral graphene p-n junction created by electron-beam irradiation

    KAUST Repository

    Yu, Xuechao

    2015-07-08

    Graphene has been considered as an attractive material for optoelectronic applications such as photodetectors owing to its extraordinary properties, e.g. broadband absorption and ultrahigh mobility. However, challenges still remain in fundamental and practical aspects of the conventional graphene photodetectors which normally rely on the photoconductive mode of operation which has the drawback of e.g. high dark current. Here, we demonstrated the photovoltaic mode operation in graphene p-n junctions fabricated by a simple but effective electron irradiation method that induces n-type doping in intrinsic p-type graphene. The physical mechanism of the junction formation is owing to the substrate gating effect caused by electron irradiation. Photoresponse was obtained for this type of photodetector because the photoexcited electron-hole pairs can be separated in the graphene p-n junction by the built-in potential. The fabricated graphene p-n junction photodetectors exhibit a high detectivity up to ~3 × 1010 Jones (cm Hz1/2 W−1) at room temperature, which is on a par with that of the traditional III–V photodetectors. The demonstrated novel and simple scheme for obtaining graphene p-n junctions can be used for other optoelectronic devices such as solar cells and be applied to other two dimensional materials based devices.

  2. Photocurrent generation in lateral graphene p-n junction created by electron-beam irradiation

    KAUST Repository

    Yu, Xuechao; Shen, Youde; Liu, Tao; Wu, Tao; Jie Wang, Qi

    2015-01-01

    Graphene has been considered as an attractive material for optoelectronic applications such as photodetectors owing to its extraordinary properties, e.g. broadband absorption and ultrahigh mobility. However, challenges still remain in fundamental and practical aspects of the conventional graphene photodetectors which normally rely on the photoconductive mode of operation which has the drawback of e.g. high dark current. Here, we demonstrated the photovoltaic mode operation in graphene p-n junctions fabricated by a simple but effective electron irradiation method that induces n-type doping in intrinsic p-type graphene. The physical mechanism of the junction formation is owing to the substrate gating effect caused by electron irradiation. Photoresponse was obtained for this type of photodetector because the photoexcited electron-hole pairs can be separated in the graphene p-n junction by the built-in potential. The fabricated graphene p-n junction photodetectors exhibit a high detectivity up to ~3 × 1010 Jones (cm Hz1/2 W−1) at room temperature, which is on a par with that of the traditional III–V photodetectors. The demonstrated novel and simple scheme for obtaining graphene p-n junctions can be used for other optoelectronic devices such as solar cells and be applied to other two dimensional materials based devices.

  3. Steady-state characteristics of lateral p-n junction vertical-cavity surface-emitting lasers

    Science.gov (United States)

    Ryzhii, V.; Tsutsui, N.; Khmyrova, I.; Ikegami, T.; Vaccaro, P. O.; Taniyama, H.; Aida, T.

    2001-09-01

    We developed an analytical device model for lateral p-n junction vertical-cavity surface-emitting lasers (LJVCSELs) with a quantum well active region. The model takes into account the features of the carrier injection, transport, and recombination in LJVCSELs as well as the features of the photon propagation in the cavity. This model is used for the calculation and analysis of the LJVCSEL steady-state characteristics. It is shown that the localization of the injected electrons primarily near the p-n junction and the reabsorption of lateral propagating photons significantly effects the LJVCSELs performance, in particular, the LJVCSEL threshold current and power-current characteristics. The reincarnation of electrons and holes due to the reabsorption of lateral propagating photons can substantially decrease the threshold current.

  4. Vertical versus Lateral Two-Dimensional Heterostructures: On the Topic of Atomically Abrupt p/n-Junctions.

    Science.gov (United States)

    Zhou, Ruiping; Ostwal, Vaibhav; Appenzeller, Joerg

    2017-08-09

    The key appeal of two-dimensional (2D) materials such as graphene, transition metal dichalcogenides (TMDs), or phosphorene for electronic applications certainly lies in their atomically thin nature that offers opportunities for devices beyond conventional transistors. It is also this property that makes them naturally suited for a type of integration that is not possible with any three-dimensional (3D) material, that is, forming heterostructures by stacking dissimilar 2D materials together. Recently, a number of research groups have reported on the formation of atomically sharp p/n-junctions in various 2D heterostructures that show strong diode-type rectification. In this article, we will show that truly vertical heterostructures do exhibit much smaller rectification ratios and that the reported results on atomically sharp p/n-junctions can be readily understood within the framework of the gate and drain voltage response of Schottky barriers that are involved in the lateral transport.

  5. Epitaxial growth of a monolayer WSe2-MoS2 lateral p-n junction with an atomically sharp interface

    KAUST Repository

    Li, Ming Yang; Shi, Yumeng; Cheng, Chia Chin; Lu, Li Syuan; Lin, Yung Chang; Tang, Hao-Ling; Tsai, Meng Lin; Chu, Chih Wei; Wei, Kung Hwa; He, Jr-Hau; Chang, Wen Hao; Suenaga, Kazu; Li, Lain-Jong

    2015-01-01

    . Spatially connected TMDC lateral heterojunctions are key components for constructing monolayer p-n rectifying diodes, light-emitting diodes, photovoltaic devices, and bipolar junction transistors. However, such structures are not readily prepared via

  6. Multiplication in Silicon p-n Junctions

    DEFF Research Database (Denmark)

    Moll, John L.

    1965-01-01

    Multiplication values were measured in the collector junctions of silicon p-n-p and n-p-n transistors before and after bombardment by 1016 neutrons/cm2. Within experimental error there was no change either in junction fields, as deduced from capacitance measurements, or in multiplication values i...

  7. Epitaxial growth of a monolayer WSe2-MoS2 lateral p-n junction with an atomically sharp interface

    KAUST Repository

    Li, Ming Yang

    2015-07-30

    Two-dimensional transition metal dichalcogenides (TMDCs) such as molybdenum sulfide MoS2 and tungsten sulfide WSe2 have potential applications in electronics because they exhibit high on-off current ratios and distinctive electro-optical properties. Spatially connected TMDC lateral heterojunctions are key components for constructing monolayer p-n rectifying diodes, light-emitting diodes, photovoltaic devices, and bipolar junction transistors. However, such structures are not readily prepared via the layer-stacking techniques, and direct growth favors the thermodynamically preferred TMDC alloys. We report the two-step epitaxial growth of lateral WSe2-MoS2 heterojunction, where the edge of WSe2 induces the epitaxial MoS2 growth despite a large lattice mismatch. The epitaxial growth process offers a controllable method to obtain lateral heterojunction with an atomically sharp interface.

  8. Field-effect P-N junction

    Science.gov (United States)

    Regan, William; Zettl, Alexander

    2015-05-05

    This disclosure provides systems, methods, and apparatus related to field-effect p-n junctions. In one aspect, a device includes an ohmic contact, a semiconductor layer disposed on the ohmic contact, at least one rectifying contact disposed on the semiconductor layer, a gate including a layer disposed on the at least one rectifying contact and the semiconductor layer and a gate contact disposed on the layer. A lateral width of the rectifying contact is less than a semiconductor depletion width of the semiconductor layer. The gate contact is electrically connected to the ohmic contact to create a self-gating feedback loop that is configured to maintain a gate electric field of the gate.

  9. Silicon fiber with p-n junction

    International Nuclear Information System (INIS)

    Homa, D.; Cito, A.; Pickrell, G.; Hill, C.; Scott, B.

    2014-01-01

    In this study, we fabricated a p-n junction in a fiber with a phosphorous doped silicon core and fused silica cladding. The fibers were fabricated via a hybrid process of the core-suction and melt-draw techniques and maintained overall diameters ranging from 200 to 900 μm and core diameters of 20–800 μm. The p-n junction was formed by doping the fiber with boron and confirmed via the current-voltage characteristic. The demonstration of a p-n junction in a melt-drawn silicon core fiber paves the way for the seamless integration of optical and electronic devices in fibers.

  10. Axial p-n-junctions in nanowires.

    Science.gov (United States)

    Fernandes, C; Shik, A; Byrne, K; Lynall, D; Blumin, M; Saveliev, I; Ruda, H E

    2015-02-27

    The charge distribution and potential profile of p-n-junctions in thin semiconductor nanowires (NWs) were analyzed. The characteristics of screening in one-dimensional systems result in a specific profile with large electric field at the boundary between the n- and p- regions, and long tails with a logarithmic drop in the potential and charge density. As a result of these tails, the junction properties depend sensitively on the geometry of external contacts and its capacity has an anomalously large value and frequency dispersion. In the presence of an external voltage, electrons and holes in the NWs can not be described by constant quasi-Fermi levels, due to small values of the average electric field, mobility, and lifetime of carriers. Thus, instead of the classical Sah-Noice-Shockley theory, the junction current-voltage characteristic was described by an alternative theory suitable for fast generation-recombination and slow diffusion-drift processes. For the non-uniform electric field in the junction, this theory predicts the forward branch of the characteristic to have a non-ideality factor η several times larger than the values 1 < η < 2 from classical theory. Such values of η have been experimentally observed by a number of researchers, as well as in the present work.

  11. Single P-N junction tandem photovoltaic device

    Science.gov (United States)

    Walukiewicz, Wladyslaw [Kensington, CA; Ager, III, Joel W.; Yu, Kin Man [Lafayette, CA

    2011-10-18

    A single P-N junction solar cell is provided having two depletion regions for charge separation while allowing the electrons and holes to recombine such that the voltages associated with both depletion regions of the solar cell will add together. The single p-n junction solar cell includes an alloy of either InGaN or InAlN formed on one side of the P-N junction with Si formed on the other side in order to produce characteristics of a two junction (2J) tandem solar cell through only a single P-N junction. A single P-N junction solar cell having tandem solar cell characteristics will achieve power conversion efficiencies exceeding 30%.

  12. Manufacturing P-N junctions in germanium bodies

    International Nuclear Information System (INIS)

    Hall, R.N.

    1980-01-01

    A method of producing p-n junctions in Ge so as to facilitate their use as radiation detectors involves forming a body of high purity p-type germanium, diffusing lithium deep into the body, in the absence of electrolytic processes, to form a junction between n-type and p-type germanium greater than 1 mm depth. (UK)

  13. Electronic transmission through p-n and n-p-n junctions of graphene

    Energy Technology Data Exchange (ETDEWEB)

    Setare, M R [Department of Science of Bijar, University of Kurdistan, Bijar (Iran, Islamic Republic of); Jahani, D, E-mail: rezakord@ipm.co, E-mail: Dariush110@gmail.co [Department of Physics, Razi University, Kermanshah (Iran, Islamic Republic of)

    2010-06-23

    In this paper, we first evaluate the electronic transmission of Dirac fermions into a p-n junction of gapped graphene and show that the final result depends on the sign of the refractive index, n. We also, by considering the appropriate wavefunctions in the region of the electrostatic potential, show that both transmission and the reflection probability turn out to be positive and less than unity instead of the negative transmission and higher than unity reflection coefficient commonly referred to as the Klein paradox. We then obtain the transmission probability corresponding to a special p-n junction for which there exists a region in which the low energy excitations of graphene acquire a finite mass and, interestingly, find that in this case the transmission is independent of the index of refraction, in contrast with the corresponding result for gapped graphene. We then discuss the validity of the solutions reported in some of the papers cited in this work which, considering the Buettiker formula, turn out to lead to the wrong results for conductivity.

  14. Nanofibrous p-n Junction and Its Rectifying Characteristics

    Directory of Open Access Journals (Sweden)

    Jian Fang

    2013-01-01

    Full Text Available Randomly oriented tin oxide (SnO2 nanofibers and poly(3,4-ethylenedioxythiophene-poly(styrenesulfonate/polyvinylpyrrolidone (PEDOT:PSS/PVP nanofibers were prepared by a two-step electrospinning technique to form a layered fibrous mat. The current-voltage measurement revealed that the fibrous mat had an obvious diode-rectifying characteristic. The thickness of the nanofiber layers was found to have a considerable influence on the device resistance and rectifying performance. Such an interesting rectifying property was attributed to the formation of a p-n junction between the fibrous SnO2 and PEDOT:PSS/PVP layers. This is the first report that a rectifying junction can be formed between two layers of electrospun nanofiber mats, and the resulting nanofibrous diode rectifier may find applications in sensors, energy harvest, and electronic textiles.

  15. Strong Depletion in Hybrid Perovskite p-n Junctions Induced by Local Electronic Doping.

    Science.gov (United States)

    Ou, Qingdong; Zhang, Yupeng; Wang, Ziyu; Yuwono, Jodie A; Wang, Rongbin; Dai, Zhigao; Li, Wei; Zheng, Changxi; Xu, Zai-Quan; Qi, Xiang; Duhm, Steffen; Medhekar, Nikhil V; Zhang, Han; Bao, Qiaoliang

    2018-04-01

    A semiconductor p-n junction typically has a doping-induced carrier depletion region, where the doping level positively correlates with the built-in potential and negatively correlates with the depletion layer width. In conventional bulk and atomically thin junctions, this correlation challenges the synergy of the internal field and its spatial extent in carrier generation/transport. Organic-inorganic hybrid perovskites, a class of crystalline ionic semiconductors, are promising alternatives because of their direct badgap, long diffusion length, and large dielectric constant. Here, strong depletion in a lateral p-n junction induced by local electronic doping at the surface of individual CH 3 NH 3 PbI 3 perovskite nanosheets is reported. Unlike conventional surface doping with a weak van der Waals adsorption, covalent bonding and hydrogen bonding between a MoO 3 dopant and the perovskite are theoretically predicted and experimentally verified. The strong hybridization-induced electronic coupling leads to an enhanced built-in electric field. The large electric permittivity arising from the ionic polarizability further contributes to the formation of an unusually broad depletion region up to 10 µm in the junction. Under visible optical excitation without electrical bias, the lateral diode demonstrates unprecedented photovoltaic conversion with an external quantum efficiency of 3.93% and a photodetection responsivity of 1.42 A W -1 . © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  16. A numerical model of p-n junctions bordering on surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Altermatt, P.P.; Aberle, A.G.; Jianhua Zhao; Aihua Wang; Heiser, G. [University of New South Wales, Sydney (Australia). Centre for Photovolatic Engineering

    2002-10-01

    Many solar cell structures contain regions where the emitter p-n junction borders on the surface. If the surface is not well passivated, a large amount of recombination occurs in such regions. This type of recombination is influenced by the electrostatics of both the p-n junction and the surface, and hence it is different from the commonly described recombination phenomena occurring in the p-n junction within the bulk. We developed a two-dimensional model for the recombination mechanisms occurring in emitter p-n junctions bordering on surfaces. The model is validated by reproducing the experimental I-V curves of specially designed silicon solar cells. It is shown under which circumstances a poor surface passivation, near where the p-n junction borders on the surface, reduces the fill factor and the open-circuit voltage. The model can be applied to many other types of solar cells. (author)

  17. Photoeffect on the p-n silicon junction under conditions of interband heating of carriers by light

    Energy Technology Data Exchange (ETDEWEB)

    Andrianov, A V; Valov, P M; Sukhanov, V L; Tuchkevich, V V; Shmidt, N M [AN SSSR, Leningrad. Fiziko-Tekhnicheskij Inst.

    1980-05-01

    Photoeffect on the p-n silicon junction conditioned by interband heating of carriers by the CO/sub 2/-laser light has been studied experimentally at room temperature and under nonstationary conditions. Photoelectromotive force (p.e.m.f.) with the sign opposite to the value p.e.m.f. appears in the case of direct displacement of p-n structures. The p.e.m.f. value increases with the increase of direct desplacement. Photoelectrons are shown to make the main contribution into the mechanism of p.e.m.f. formation. Lateral p.e.m.f. connected with spreading currents in the direction parallel to the surface of the p-n junction appears in the p-n structure base. It has been found out that structures with highly alloyed emitter at reverse displacement operates under standard photodiod conditions, that is due to the semiconductor lattice heating by CO/sub 2/-laser irradiation.

  18. Photoeffect on the p-n silicon junction under conditions of interband heating of carriers by light

    International Nuclear Information System (INIS)

    Andrianov, A.V.; Valov, P.M.; Sukhanov, V.L.; Tuchkevich, V.V.; Shmidt, N.M.

    1980-01-01

    Photoeffect on the p-n silicon junction conditioned by interband heating of carriers by the CO 2 -laser light has been studied experimentally at room temperature and under nonstationary conditions. Photoelectromotive force (p.e.m.f.) with the sign opposite to the value p.e.m.f. appears in the case of direct displacement of p-n structures. The p.e.m.f. value increases with the increase of direct desplacement. Photoelectrons are shown to make the main contribution into the mechanism of p.e.m.f. formation. Lateral p.e.m.f. connected with spreading currents in the direction parallel to the surface of the p-n junction appears in the p-n structure base. It has been found out that structures with highly alloyed emitter at reverse displacement operates under standard photodiod conditions, that is due to the semiconductor lattice heating by CO 2 -laser irradiation

  19. Imaging the p-n junction in a gallium nitride nanowire with a scanning microwave microscope

    Energy Technology Data Exchange (ETDEWEB)

    Imtiaz, Atif [Physical Measurement Laboratory, National Institute of Standards and Technology, Boulder, Colorado 80305 (United States); Department of Electrical, Computer, and Energy Engineering, University of Colorado, Boulder, Colorado 80309 (United States); Wallis, Thomas M.; Brubaker, Matt D.; Blanchard, Paul T.; Bertness, Kris A.; Sanford, Norman A.; Kabos, Pavel, E-mail: kabos@boulder.nist.gov [Physical Measurement Laboratory, National Institute of Standards and Technology, Boulder, Colorado 80305 (United States); Weber, Joel C. [Physical Measurement Laboratory, National Institute of Standards and Technology, Boulder, Colorado 80305 (United States); Department of Mechanical Engineering, University of Colorado, Boulder, Colorado 80309 (United States); Coakley, Kevin J. [Information Technology Laboratory, National Institute of Standards and Technology, Boulder, Colorado 80305 (United States)

    2014-06-30

    We used a broadband, atomic-force-microscope-based, scanning microwave microscope (SMM) to probe the axial dependence of the charge depletion in a p-n junction within a gallium nitride nanowire (NW). SMM enables the visualization of the p-n junction location without the need to make patterned electrical contacts to the NW. Spatially resolved measurements of S{sub 11}{sup ′}, which is the derivative of the RF reflection coefficient S{sub 11} with respect to voltage, varied strongly when probing axially along the NW and across the p-n junction. The axial variation in S{sub 11}{sup ′}  effectively mapped the asymmetric depletion arising from the doping concentrations on either side of the junction. Furthermore, variation of the probe tip voltage altered the apparent extent of features associated with the p-n junction in S{sub 11}{sup ′} images.

  20. Solution-grown organic single-crystalline p-n junctions with ambipolar charge transport.

    Science.gov (United States)

    Fan, Congcheng; Zoombelt, Arjan P; Jiang, Hao; Fu, Weifei; Wu, Jiake; Yuan, Wentao; Wang, Yong; Li, Hanying; Chen, Hongzheng; Bao, Zhenan

    2013-10-25

    Organic single-crystalline p-n junctions are grown from mixed solutions. First, C60 crystals (n-type) form and, subsequently, C8-BTBT crystals (p-type) nucleate heterogeneously on the C60 crystals. Both crystals continue to grow simultaneously into single-crystalline p-n junctions that exhibit ambipolar charge transport characteristics. This work provides a platform to study organic single-crystalline p-n junctions. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  1. P-N semiconductor junctions used as X-ray detectors

    International Nuclear Information System (INIS)

    Pela, C.A.; Bruco, J.L.; Navas, E.A.; Paula, E. de; Guilardi Neto, T.

    1987-01-01

    The current response of some comercial P-N semiconductor junctions in function of X-ray incidency, in 40 to 140 KVp band used in diagnosis was characterized. Some junctions were also exposed to radiation of 80 to 250 KVp used in therapy. (C.G.C.) [pt

  2. Two-dimensional dopant profiling of gallium nitride p-n junctions by scanning capacitance microscopy

    Science.gov (United States)

    Lamhamdi, M.; Cayrel, F.; Frayssinet, E.; Bazin, A. E.; Yvon, A.; Collard, E.; Cordier, Y.; Alquier, D.

    2016-04-01

    Two-dimensional imaging of dopant profiles for n and p-type regions are relevant for the development of new power semiconductors, especially for gallium nitride (GaN) for which classical profiling techniques are not adapted. This is a challenging task since it needs a technique with simultaneously good sensitivity, high spatial resolution and high dopant gradient resolution. To face these challenges, scanning capacitance microscopy combined with Atomic Force Microscopy is a good candidate, presenting reproducible results, as demonstrated in literature. In this work, we attempt to distinguish reliably and qualitatively the various doping concentrations and type at p-n and unipolar junctions. For both p-n and unipolar junctions three kinds of samples were prepared and measured separately. The space-charge region of the p-n metallurgical junction, giving rise to different contrasts under SCM imaging, is clearly observed, enlightening the interest of the SCM technique.

  3. Formation of p-n-p junction with ionic liquid gate in graphene

    International Nuclear Information System (INIS)

    He, Xin; Tang, Ning; Duan, Junxi; Zhang, Yuewei; Lu, Fangchao; Xu, Fujun; Yang, Xuelin; Gao, Li; Wang, Xinqiang; Shen, Bo; Ge, Weikun

    2014-01-01

    Ionic liquid gating is a technique which is much more efficient than solid gating to tune carrier density. To observe the electronic properties of such a highly doped graphene device, a top gate made of ionic liquid has been used. By sweeping both the top and back gate voltage, a p-n-p junction has been created. The mechanism of forming the p-n-p junction has been discussed. Tuning the carrier density by ionic liquid gate can be an efficient method to be used in flexible electronics

  4. Two-dimensional non-volatile programmable p-n junctions

    Science.gov (United States)

    Li, Dong; Chen, Mingyuan; Sun, Zhengzong; Yu, Peng; Liu, Zheng; Ajayan, Pulickel M.; Zhang, Zengxing

    2017-09-01

    Semiconductor p-n junctions are the elementary building blocks of most electronic and optoelectronic devices. The need for their miniaturization has fuelled the rapid growth of interest in two-dimensional (2D) materials. However, the performance of a p-n junction considerably degrades as its thickness approaches a few nanometres and traditional technologies, such as doping and implantation, become invalid at the nanoscale. Here we report stable non-volatile programmable p-n junctions fabricated from the vertically stacked all-2D semiconductor/insulator/metal layers (WSe2/hexagonal boron nitride/graphene) in a semifloating gate field-effect transistor configuration. The junction exhibits a good rectifying behaviour with a rectification ratio of 104 and photovoltaic properties with a power conversion efficiency up to 4.1% under a 6.8 nW light. Based on the non-volatile programmable properties controlled by gate voltages, the 2D p-n junctions have been exploited for various electronic and optoelectronic applications, such as memories, photovoltaics, logic rectifiers and logic optoelectronic circuits.

  5. Experimental analysis and theoretical model for anomalously high ideality factors in ZnO/diamond p-n junction diode

    International Nuclear Information System (INIS)

    Wang Chengxin; Yang Guowei; Liu Hongwu; Han Yonghao; Luo Jifeng; Gao Chunxiao; Zou Guangtian

    2004-01-01

    High-quality heterojunctions between p-type diamond single-crystalline films and highly oriented n-type ZnO films were fabricated by depositing the p-type diamond single-crystal films on the I o -type diamond single crystal using a hot filament chemical vapor deposition, and later growing a highly oriented n-type ZnO film on the p-type diamond single-crystal film by magnetron sputtering. Interestingly, anomalously high ideality factors (n>>2.0) in the prepared ZnO/diamond p-n junction diode in the interim bias voltage range were measured. For this, detailed electronic characterizations of the fabricated p-n junction were conducted, and a theoretical model was proposed to clarify the much higher ideality factors of the special heterojunction diode

  6. Characteristic features of silicon multijunction solar cells with vertical p-n junctions

    International Nuclear Information System (INIS)

    Guk, E.G.; Nalet, T.A.; Shvarts, M.Z.; Shuman, V.B.

    1997-01-01

    A relatively simple technology (without photolithography) based on diffusion welding and ion-plasma deposition of an insulating coating has been developed for fabricating multijunction silicon solar cells with vertical p-n junctions. The effective collection factor for such structures is independent of the wavelength of the incident light in the wavelength range λ=340-1080 nm

  7. The electronic structure of radial p-n junction silicon nanowires

    Science.gov (United States)

    Chiou, Shan-Haw; Grossman, Jeffrey

    2007-03-01

    Silicon nanowires with radial p-n junctions have recently been suggested for photovoltaic applications because incident light can be absorbed along the entire length of the wire, while photogenerated carriers only need to diffuse a maximum of one radius to reach the p-n junction. If the differential of the potential is larger than the binding energy of the electron-hole pair and has a range larger than the Bohr radius of electron-hole pair, then the charge separation mechanism will be similar to traditional silicon solar cells. However, in the small-diameter limit, where quantum confinement effects are prominent, both the exciton binding energy and the potential drop will increase, and the p-n junction itself may have a dramatically different character. We present ab initio calculations based on the generalized gradient approximation (GGA) of silicon nanowires with 2-3 nm diameter in the [111] growth direction. A radial p-n junction was formed by symmetrically doping boron and phosphorous at the same vertical level along the axis of the nanowire. The competition between the slope and character of the radial electronic potential and the exciton binding energy will presented in the context of a charge separation mechanism.

  8. Axial p-n junction and space charge limited current in single GaN nanowire

    Science.gov (United States)

    Fang, Zhihua; Donatini, Fabrice; Daudin, Bruno; Pernot, Julien

    2018-01-01

    The electrical characterizations of individual basic GaN nanostructures, such as axial nanowire (NW) p-n junctions, are becoming indispensable and crucial for the fully controlled realization of GaN NW based devices. In this study, electron beam induced current (EBIC) measurements were performed on two single axial GaN p-n junction NWs grown by plasma-assisted molecular beam epitaxy. I-V characteristics revealed that both ohmic and space charge limited current (SCLC) regimes occur in GaN p-n junction NW. Thanks to an improved contact process, both the electric field induced by the p-n junction and the SCLC in the p-part of GaN NW were disclosed and delineated by EBIC signals under different biases. Analyzing the EBIC profiles in the vicinity of the p-n junction under 0 V and reverse bias, we deduced a depletion width in the range of 116-125 nm. Following our previous work, the acceptor N a doping level was estimated to be 2-3 × 1017 at cm-3 assuming a donor level N d of 2-3 × 1018 at cm-3. The hole diffusion length in n-GaN was determined to be 75 nm for NW #1 and 43 nm for NW #2, demonstrating a low surface recombination velocity at the m-plane facet of n-GaN NW. Under forward bias, EBIC imaging visualized the electric field induced by the SCLC close to p-side contact, in agreement with unusual SCLC previously reported in GaN NWs.

  9. Axial p-n junction and space charge limited current in single GaN nanowire.

    Science.gov (United States)

    Fang, Zhihua; Donatini, Fabrice; Daudin, Bruno; Pernot, Julien

    2018-01-05

    The electrical characterizations of individual basic GaN nanostructures, such as axial nanowire (NW) p-n junctions, are becoming indispensable and crucial for the fully controlled realization of GaN NW based devices. In this study, electron beam induced current (EBIC) measurements were performed on two single axial GaN p-n junction NWs grown by plasma-assisted molecular beam epitaxy. I-V characteristics revealed that both ohmic and space charge limited current (SCLC) regimes occur in GaN p-n junction NW. Thanks to an improved contact process, both the electric field induced by the p-n junction and the SCLC in the p-part of GaN NW were disclosed and delineated by EBIC signals under different biases. Analyzing the EBIC profiles in the vicinity of the p-n junction under 0 V and reverse bias, we deduced a depletion width in the range of 116-125 nm. Following our previous work, the acceptor N a doping level was estimated to be 2-3 × 10 17 at cm -3 assuming a donor level N d of 2-3 × 10 18 at cm -3 . The hole diffusion length in n-GaN was determined to be 75 nm for NW #1 and 43 nm for NW #2, demonstrating a low surface recombination velocity at the m-plane facet of n-GaN NW. Under forward bias, EBIC imaging visualized the electric field induced by the SCLC close to p-side contact, in agreement with unusual SCLC previously reported in GaN NWs.

  10. P-N junction solar cell grown by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Hazrati Fard, M.

    2001-01-01

    Growth of GaAs epilayers by Molecular Beam Epitaxy was accomplished for the first time in Iran. The layers were grown on GaAs (001) substrates (p+ wafer) with Si impurity for p n junction solar cell fabrication at a rate of nearly one micron per hour and 0.25 micron per quarter. Crystalline quality of grown layers had been monitored during growth by Reflection High Energy Electron Diffraction system. Doping profile and layer thickness was assessed by electrochemical C-V profiling method. Then Hall measurements were conducted on small samples both in room temperature and liquid nitrogen temperature so giving average carrier concentration and compensation ratio. The results as like: V oc , I sc , F F, η were comparable with other laboratory reports. information for obtaining good and repeatable growths was collected. Therefore, the conditions of repeatable quality growth p n junction solar cells onto GaAs (001) substrates were determined

  11. Oscillating Magnetoresistance in Graphene p-n Junctions at Intermediate Magnetic Fields.

    Science.gov (United States)

    Overweg, Hiske; Eggimann, Hannah; Liu, Ming-Hao; Varlet, Anastasia; Eich, Marius; Simonet, Pauline; Lee, Yongjin; Watanabe, Kenji; Taniguchi, Takashi; Richter, Klaus; Fal'ko, Vladimir I; Ensslin, Klaus; Ihn, Thomas

    2017-05-10

    We report on the observation of magnetoresistance oscillations in graphene p-n junctions. The oscillations have been observed for six samples, consisting of single-layer and bilayer graphene, and persist up to temperatures of 30 K, where standard Shubnikov-de Haas oscillations are no longer discernible. The oscillatory magnetoresistance can be reproduced by tight-binding simulations. We attribute this phenomenon to the modulated densities of states in the n- and p-regions.

  12. Temperature-Dependent Asymmetry of Anisotropic Magnetoresistance in Silicon p-n Junctions.

    Science.gov (United States)

    Yang, D Z; Wang, T; Sui, W B; Si, M S; Guo, D W; Shi, Z; Wang, F C; Xue, D S

    2015-09-01

    We report a large but asymmetric magnetoresistance in silicon p-n junctions, which contrasts with the fact of magnetoresistance being symmetric in magnetic metals and semiconductors. With temperature decreasing from 293 K to 100 K, the magnetoresistance sharply increases from 50% to 150% under a magnetic field of 2 T. At the same time, an asymmetric magnetoresistance, which manifests itself as a magnetoresistance voltage offset with respect to the sign of magnetic field, occurs and linearly increases with magnetoresistance. More interestingly, in contrast with other materials, the lineshape of anisotropic magnetoresistance in silicon p-n junctions significantly depends on temperature. As temperature decreases from 293 K to 100 K, the width of peak shrinks from 90° to 70°. We ascribe these novel magnetoresistance to the asymmetric geometry of the space charge region in p-n junction induced by the magnetic field. In the vicinity of the space charge region the current paths are deflected, contributing the Hall field to the asymmetric magnetoresistance. Therefore, the observed temperature-dependent asymmetry of magnetoresistance is proved to be a direct consequence of the spatial configuration evolution of space charge region with temperature.

  13. Effect of deep dislocation levels in silicon on the properties of p-n junctions

    Energy Technology Data Exchange (ETDEWEB)

    Zakharov, A.G.; Dudko, V.G.; Nabokov, G.M.; Sechenov, D.A.

    1988-07-01

    We present the results of studies on the influence of deep levels, due to dislocations in electronic-grade silicon, on the lifetime of minority carriers and on the current-voltage and capacitance-voltage characteristics of p-n junctions. The parameters of the deep levels were determined by means of dynamic spectroscopy. The carrier lifetime in the high-resistance region of the p-n junction correlates well with the dislocation density and varies from 10/sup /minus/7/ sec to 3 /centered dot/10/sup /minus/6/ sec when the dislocation density N/sub d/ varies from 10/sup 7/ cm/sup /minus/2/ to 5 /centered dot/10/sup 3/ cm/sup /minus/2/. The voltage across the p-n junction at a high level of injection varies 1.6 to 6.2 v as a function of N/sub d/. The ionization energy of deep levels associated with dislocation in silicon is 0.44 and 0.57 eV, measured from the bottom of the conduction band.

  14. Transport properties of monolayer and bilayer graphene p-n junctions with charge puddles in the quantum Hall regime

    International Nuclear Information System (INIS)

    Cheng Shuguang

    2010-01-01

    Recent experiments have confirmed that the electron-hole inhomogeneity in graphene is a new type of charge disorder. Motivated by such confirmation, we theoretically study the transport properties of a monolayer graphene (MLG) based p-n junction and a bilayer graphene (BLG) p-n junction in the quantum Hall regime where electron-hole puddles are considered. By using the non-equilibrium Green function method, both the current and conductance are obtained. We find that, in the presence of the electron-hole inhomogeneity, the lowest quantized conductance plateau at e 2 /h emerges in the MLG p-n junction under very small charge puddle disorder strength. For a BLG p-n junction, however, the conductance in the p-n region is enhanced with charge puddles, and the lowest quantized conductance plateau emerges at 2e 2 /h. Besides, when an ideal quantized conductance plateau is formed for a MLG p-n junction, the universal conductance fluctuation is found to be 2e 2 /3h. Furthermore, we also investigate the influence of Anderson disorder on such p-n junctions and the comparison and discussion are given accordingly. To compare the two models with different types of disorder, we investigate the conductance distribution specially. Finally the influence of disorder strength on the conductance of a MLG p-n junction is investigated.

  15. Study of seed layer effect in nuclear battery with P-N diode junction

    Energy Technology Data Exchange (ETDEWEB)

    Uhm, Young Rang; Son, Kwang Jae; Lee, Jun Sig [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of); Choi, Byoung Gun [Kookmin Univ., Seoul (Korea, Republic of)

    2014-10-15

    A nuclear battery with diode junction is a device that converts nuclear radiation directly to electric power. The mechanism of a nuclear battery is same as the P-N junction diode for solar cell application. The photovoltaic is operated by converted photons to electrical energy in the junction. In betavoltaic battery, beta particles are collected and converted to electrical energy as similar principle as photovoltaic. A very low current, order of nano or micro amps, is generated in devices. If a radioisotope (RI) with a long halflife (over 50 years) is used, a lifetime of a power source is extended as long as halflife time of RI.. Some special applications require long-lived compact power sources. These include space equipment, sensors in remote locations (space, underground, etc.), and implantable medical devices. Conventionally, these sources rely on converting chemical energy to electricity. This means they require a large storage of chemical 'fuel' since the amount of energy released per reaction is small. The nuclear battery is a novel solution to solve the power needs of these applications. For the {sup 63}Ni beta-source we used, the half-life is 100.2 years. Hence, the power sources we describe could extend a system's operating life by several decades or even a century, during which time the system could gain learned behavior without worrying about the power turning off. Radioactive thin-film-based power sources also have energy density orders of magnitude higher than chemical-reaction-based energy sources. In this study, we fabricate nuclear battery using {sup 63}Ni source with diode junction, and studied seed layer effect for optimization of structure of p-n junction.

  16. High-efficiency p-n junction oxide photoelectrodes for photoelectrochemical water splitting.

    Science.gov (United States)

    Liu, Zhifeng; Yan, Lu

    2016-11-16

    Development of all oxide p-n junctions makes a significant advancement in photoelectrode catalysis functional materials. In this article, we report the preparation of TiO 2 nanorod (NR)/Cu 2 O photoanodes via a simple hydrothermal method followed by an electrochemical deposition process. This facile synthesis route can simultaneously achieve uniform TiO 2 NR/Cu 2 O composite nanostructures and obtain varied amounts of Cu 2 O by controlling the deposition time. The photocurrent density of TiO 2 NR/Cu 2 O heterojunction photoanodes enhanced the photocatalytic activity with a photocurrent density of 5.25 mA cm -2 at 1.23 V versus RHE compared to pristine TiO 2 NR photoanodes under the same conditions. It is demonstrated that the presence of Cu 2 O has played an important role in expanding the spectral response region and reducing the photogenerated charge recombination rate. More importantly, the results provide new insights into the performance of all oxide p-n junctions as photoanodes for PEC water splitting.

  17. Efficient p-n junction-based thermoelectric generator that can operate at extreme temperature conditions

    Science.gov (United States)

    Chavez, Ruben; Angst, Sebastian; Hall, Joseph; Maculewicz, Franziska; Stoetzel, Julia; Wiggers, Hartmut; Thanh Hung, Le; Van Nong, Ngo; Pryds, Nini; Span, Gerhard; Wolf, Dietrich E.; Schmechel, Roland; Schierning, Gabi

    2018-01-01

    In many industrial processes, a large proportion of energy is lost in the form of heat. Thermoelectric generators can convert this waste heat into electricity by means of the Seebeck effect. However, the use of thermoelectric generators in practical applications on an industrial scale is limited in part because electrical, thermal, and mechanical bonding contacts between the semiconductor materials and the metal electrodes in current designs are not capable of withstanding thermal-mechanical stress and alloying of the metal-semiconductor interface when exposed to the high temperatures occurring in many real-world applications. Here we demonstrate a concept for thermoelectric generators that can address this issue by replacing the metallization and electrode bonding on the hot side of the device by a p-n junction between the two semiconductor materials, making the device robust against temperature induced failure. In our proof-of-principle demonstration, a p-n junction device made from nanocrystalline silicon is at least comparable in its efficiency and power output to conventional devices of the same material and fabrication process, but with the advantage of sustaining high hot side temperatures and oxidative atmosphere.

  18. Efficient p-n junction-based thermoelectric generator that can operate at extreme temperature conditions

    DEFF Research Database (Denmark)

    Chavez, Ruben; Angst, Sebastian; Hall, Joseph

    2017-01-01

    In many industrial processes a large proportion of energy is lost in the form of heat. Thermoelectric generators can convert this waste heat into electricity by means of the Seebeck effect. However, the use of thermoelectric generators in practical applications on an industrial scale is limited...... in part because electrical, thermal, and mechanical bonding contacts between the semiconductor materials and the metal electrodes in current designs are not capable of withstanding thermal-mechanical stress and alloying of the metal-semiconductor interface when exposed to the high temperatures occurring...... in many real-world applications. Here we demonstrate a concept for thermoelectric generators that can address this issue by replacing the metallization and electrode bonding on the hot side of the device by a p-n junction between the two semiconductor materials, making the device robust against...

  19. Dual-gate operation and carrier transport in SiGe p-n junction nanowires

    Science.gov (United States)

    Delker, C. J.; Yoo, J. Y.; Bussmann, E.; Swartzentruber, B. S.; Harris, C. T.

    2017-11-01

    We investigate carrier transport in silicon-germanium nanowires with an axial p-n junction doping profile by fabricating these wires into transistors that feature separate top gates over each doping segment. By independently biasing each gate, carrier concentrations in the n- and p-side of the wire can be modulated. For these devices, which were fabricated with nickel source-drain electrical contacts, holes are the dominant charge carrier, with more favorable hole injection occurring on the p-side contact. Channel current exhibits greater sensitivity to the n-side gate, and in the reverse biased source-drain configuration, current is limited by the nickel/n-side Schottky contact.

  20. Sb2S3:C/CdS p-n junction by laser irradiation

    International Nuclear Information System (INIS)

    Arato, A.; Cardenas, E.; Shaji, S.; O'Brien, J.J.; Liu, J.; Castillo, G. Alan; Das Roy, T.K.; Krishnan, B.

    2009-01-01

    In this paper, we report laser irradiated carbon doping of Sb 2 S 3 thin films and formation of a p-n junction photovoltaic structure using these films. A very thin carbon layer was evaporated on to chemical bath deposited Sb 2 S 3 thin films of approximately 0.5 μm in thickness. Sb 2 S 3 thin films were prepared from a solution containing SbCl 3 and Na 2 S 2 O 3 at 27 deg. C for 5 h and the films obtained were highly resistive. These C/Sb 2 S 3 thin films were irradiated by an expanded laser beam of diameter approximately 0.5 cm (5 W power, 532 nm Verdi laser), for 2 min at ambient atmosphere. Morphology and composition of these films were analyzed. These films showed p-type conductivity due to carbon diffusion (Sb 2 S 3 :C) by the thermal energy generated by the absorption of laser radiation. In addition, these thin films were incorporated in a photovoltaic structure Ag/Sb 2 S 3 :C/CdS/ITO/Glass. For this, CdS thin film of 50 nm in thickness was deposited on a commercially available ITO coated glass substrate from a chemical bath containing CdCl 2 , sodium citrate, NH 4 OH and thiourea at 70 deg. C . On the CdS film, Sb 2 S 3 /C layers were deposited. This multilayer structure was subjected to the laser irradiation, C/Sb 2 S 3 side facing the beam. The p-n junction formed by p-Sb 2 S 3 :C and n-type CdS showed V oc = 500 mV and J sc = 0.5 mA/cm 2 under illumination by a tungsten halogen lamp. This work opens up a new method to produce solar cell structures by laser assisted material processing

  1. Horizontal Assembly of Single Nanowire Diode Fabricated by p-n Junction GaN NW Grown by MOCVD

    Directory of Open Access Journals (Sweden)

    Ji-Hyeon Park

    2014-01-01

    Full Text Available Uniaxially p-n junction gallium nitride nanowires have been synthesized via metal-organic chemical vapor deposition method. Nanowires prepared on Si(111 substrates were found to grow perpendicular to the substrate, and the transmission electron microscopy studies demonstrated that the nanowires had singlecrystalline structures with a growth axis. The parallel assembly of the p-n junction nanowire was prepared on a Si substrate with a thermally grown SiO2 layer. The transport studies of horizontal gallium nitride nanowire structures assembled from p- and n-type materials show that these junctions correspond to well-defined p-n junction diodes. The p-n junction devices based on GaN nanowires suspended over the electrodes were fabricated and their electrical properties were investigated. The horizontally assembled gallium nitride nanowire diodes suspended over the electrodes exhibited a substantial increase in conductance under UV light exposure. Apart from the selectivity to different light wavelengths, high responsivity and extremely short response time have also been obtained.

  2. Broad and focused ion beams Ga+ implantation damage in the fabrication of p+-n Si shallow junctions

    International Nuclear Information System (INIS)

    Steckl, A.J.; Lin, C.M.; Patrizio, D.; Rai, A.K.; Pronko, P.P.

    1989-01-01

    The use of focused and broad beam Ga + implantation for the fabrication of p + -n Si shallow junctions is explored. In particular, the issue of ion induced damage and its effect on diode electrical properties is explored. FIB-fabricated junctions exhibit a deeper junction with lower sheet resistance and higher leakage current than the BB-implanted diodes. TEM analysis exhibits similar amorphization and recrystallization behavior for both implantation techniques with the BB case generating a higher dislocation loop density after a 900 degree C anneal. 6 refs., 5 figs., 1 tab

  3. Comparative analysis of photovoltaic principles governing dye-sensitized solar cells and p-n junctions

    Science.gov (United States)

    Bisquert, Juan; Garcia-Canadas, Jorge; Mora-Sero, Ivan; Palomares, Emilio

    2004-02-01

    We discuss a generalized model for a solar cell, and the realization with heterogeneous photochemical photovoltaic converters such as the dye-sensitized solar cell. The different steps involved in the conversion of photon energy to electrical energy, indicate that a key point to consider is maintaining the separation of Fermi levels in the selective contacts to the absorber. In order to understand the irreversible processes limiting the efficient operation of the solar cell, it is necessary to obtain a precise description of the internal distribution of Fermi levels. We suggest the equivalent circuit as a central tool for obtaining such description, in relation with small perturbation measurement techniques. The fundamental steps of excitation and charge separation, and the losses by transport and charge transfer, can be represented by suitable circuit elements, and the overall circuit configuration indicates the operation of the selective contacts. The comparison of the equivalent circuits for heterogeneous dye solar cells and solid-state p-n junctions, shows the significant difference in the mechanisms of the selective contacts of these solar cells.

  4. The p - n junction under nonuniform strains: general theory and application to photovoltaics

    Science.gov (United States)

    Guin, L.; Jabbour, M. E.; Triantafyllidis, N.

    2018-01-01

    It is well known that mechanical strains influence the electronic properties of semiconductor devices. Modeling the fully coupled mechanical, electrical, and electronic responses of semiconductors is therefore essential for predicting the effects of mechanical loading on their overall electronic response. In the first part of this paper, we develop a general continuum model that couples the mechanical, electrical, and electronic responses of a finitely deformable semiconductor. The proposed model accounts for the dependence of the band edge energies, densities of states, and electronic mobilities on strain. The governing equations are derived from the basic principles of the thermomechanics of electromagnetic continua undergoing electronic transport. In particular, we find that there exists electronically induced strains that can exceed their electromagnetic (Maxwell) counterparts by an order of magnitude. In the second part, motivated by applications that involve the bending of a photovoltaic cell, we use asymptotic methods to compute the current-voltage characteristic of a p - n junction under nonuniform strains. We find that, for a typical monocrystalline silicon solar cell, the changes in dark current are significant, i.e., of the order of 20% for strains of 0.2%.

  5. Analytical Study of 90Sr Betavoltaic Nuclear Battery Performance Based on p-n Junction Silicon

    International Nuclear Information System (INIS)

    Rahastama, Swastya; Waris, Abdul

    2016-01-01

    Previously, an analytical calculation of 63 Ni p-n junction betavoltaic battery has been published. As the basic approach, we reproduced the analytical simulation of 63 Ni betavoltaic battery and then compared it to previous results using the same design of the battery. Furthermore, we calculated its maximum power output and radiation- electricity conversion efficiency using semiconductor analysis method.Then, the same method were applied to calculate and analyse the performance of 90 Sr betavoltaic battery. The aim of this project is to compare the analytical perfomance results of 90 Sr betavoltaic battery to 63 Ni betavoltaic battery and the source activity influences to performance. Since it has a higher power density, 90 Sr betavoltaic battery yields more power than 63 Ni betavoltaic battery but less radiation-electricity conversion efficiency. However, beta particles emitted from 90 Sr source could travel further inside the silicon corresponding to stopping range of beta particles, thus the 90 Sr betavoltaic battery could be designed thicker than 63 Ni betavoltaic battery to achieve higher conversion efficiency. (paper)

  6. Universal tunneling behavior in technologically relevant P/N junction diodes

    International Nuclear Information System (INIS)

    Solomon, Paul M.; Jopling, Jason; Frank, David J.; D'Emic, Chris; Dokumaci, O.; Ronsheim, P.; Haensch, W.E.

    2004-01-01

    Band-to-band tunneling was studied in ion-implanted P/N junction diodes with profiles representative of present and future silicon complementary metal-oxide-silicon (CMOS) field effect transistors. Measurements were done over a wide range of temperatures and implant parameters. Profile parameters were derived from analysis of capacitance versus voltage characteristics, and compared to secondary-ion mass spectroscopy analysis. When the tunneling current was plotted against the effective tunneling distance (tunneling distance corrected for band curvature) a quasi-universal exponential reduction of tunneling current versus, tunneling distance was found with an attenuation length of 0.38 nm, corresponding to a tunneling effective mass of 0.29 times the free electron mass (m 0 ), and an extrapolated tunneling current at zero tunnel distance of 5.3x10 7 A/cm 2 at 300 K. These results are directly applicable for predicting drain to substrate currents in CMOS transistors on bulk silicon, and body currents in CMOS transistors in silicon-on-insulator

  7. Imaging the formation of a p-n junction in a suspended carbon nanotube with scanning photocurrent microscopy

    NARCIS (Netherlands)

    Buchs, G.; Barkelid, K.M.; Bagiante, S.; Steele, G.A.; Zwiller, V.

    2011-01-01

    We use scanning photocurrent microscopy (SPCM) to investigate individual suspended semiconducting carbon nanotube devices where the potential profile is engineered by means of local gates. In situ tunable p-n junctions can be generated at any position along the nanotube axis. Combining SPCM with

  8. Direct assessment of p-n junctions in single GaN nanowires by Kelvin probe force microscopy

    Science.gov (United States)

    Minj, Albert; Cros, Ana; Auzelle, Thomas; Pernot, Julien; Daudin, Bruno

    2016-09-01

    Making use of Kelvin probe force microscopy, in dark and under ultraviolet illumination, we study the characteristics of p-n junctions formed along the axis of self-organized GaN nanowires (NWs). We map the contact potential difference of the single NW p-n junctions to locate the space charge region and directly measure the depletion width and the junction voltage. Simulations indicate a shrinkage of the built-in potential for NWs with small diameter due to surface band bending, in qualitative agreement with the measurements. The photovoltage of the NW/substrate contact is studied by analyzing the response of NW segments with p- and n-type doping under illumination. Our results show that the shifts of the Fermi levels, and not the changes in surface band bending, are the most important effects under above band-gap illumination. The quantitative electrical information obtained here is important for the use of NW p-n junctions as photovoltaic or rectifying devices at the nanoscale, and is especially relevant since the technique does not require the formation of ohmic contacts to the NW junction.

  9. An apparatus and process for forming P-N junction semiconductor units

    International Nuclear Information System (INIS)

    1975-01-01

    It is stated that although many methods of ion implantation have been developed it seems that the method of 'hot implantation' is still in its infancy. In this method the target is preheated in an ion implantor during implantation of ions, leading to radiation enhanced diffusion. The apparatus described comprises the following: (i) a bell jar evacuated to -3 Torr containing four electrodes arranged in two pairs, one electrode of the first pair being in the form of a mesh; (ii) a source of high pulsating direct voltage connected to the first pair of electrodes, with the mesh electrode negatively poled, to ionise the rarified air in the bell jar and accelerate the resulting positive N and O ions; (iii) an RF voltage source connected to the other pair of electrodes to facilitate the ionisation; (iv) a dopant semiconductor body, heated by a wire wound heater, placed underneath the mesh electrode so that the accelerated ions bombard the dopant layer through the mesh electrode and implant dopant atoms in the semiconductor body. The distance between the mesh electrode and the surface of the dopant-coated semiconductive body, should be about 5mm. The mesh electrode consists of a sputtering-resistant refractory metal, and includes a cooling system. The dopant-coated semiconductive body is placed on a ceramic plate in the bell jar, and the power supply line of the heater is insulated from the voltage applied to the negative electrode, which is earthed, by using an insulated heater transformer combined with an autotransformer. The ceramic plate is attached to a plate on which the heater is wound, and the temperature of the heating should be variable between 400 0 and 500 0 C. A process for forming P-N junction semiconductor units using this apparatus is described. (U.K.)

  10. Negative differential resistance observed from vertical p+-n+ junction device with two-dimensional black phosphorous

    Science.gov (United States)

    Lee, Daeyeong; Jang, Young Dae; Kweon, Jaehwan; Ryu, Jungjin; Hwang, Euyheon; Yoo, Won Jong; Samsung-SKKU Graphene/2D Center (SSGC) Collaboration

    A vertical p+-n+ homojunction was fabricated by using black phosphorus (BP) as a van der Waals two-dimensional (2D) material. The top and bottom layers of the materials were doped by chemical dopants of gold chloride (AuCl3) for p-type doping and benzyl viologen (BV) for n-type doping. The negative differential resistance (NDR) effect was clearly observed from the output curves of the fabricated BP vertical devices. The thickness range of the 2D material showing NDR and the peak to valley current ratio of NDR are found to be strongly dependent on doping condition, gate voltage, and BP's degradation level. Furthermore, the carrier transport of the p+-n+ junction was simulated by using density functional theory (DFT) and non-equilibrium Green's function (NEGF). Both the experimental and simulation results confirmed that the NDR is attributed to the band-to-band tunneling (BTBT) across the 2D BP p+-n+ junction, and further quantitative details on the carrier transport in the vertical p+-n+ junction devices were explored, according to the analyses of the measured transfer curves and the DFT simulation results. This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MEST) (2013R1A2A2A01015516).

  11. Porous silicon formation by hole injection from a back side p+/n junction for electrical insulation applications

    International Nuclear Information System (INIS)

    Fèvre, A; Menard, S; Defforge, T; Gautier, G

    2016-01-01

    In this paper, we propose to study the formation of porous silicon (PS) in low doped (1 × 10 14 cm −3 ) n-type silicon through hole injection from a back side p + /n junction in the dark. This technique is investigated within the framework of electrical insulation. Three different types of junctions are investigated. The first one is an epitaxial n-type layer grown on p + doped silicon wafer. The two other junctions are carried out by boron diffusion leading to p + regions with junction depths of 20 and 115 μm. The resulting PS morphology is a double layer with a nucleation layer (NL) and macropores fully filled with mesoporous material. This result is unusual for low doped n-type silicon. Morphology variations are described depending on the junction formation process, the electrolyte composition, the anodization current density and duration. In order to validate the more interesting industrial potentialities of the p + /n injection technique, a comparison is achieved with back side illumination in terms of resulting morphology and experiments confirm comparable results. Electrical characterizations of the double layer, including NL and fully filled macropores, are then performed. To our knowledge, this is the first electrical investigation in low doped n type silicon with this morphology. Compared to the bulk silicon, the measured electrical resistivities are 6–7 orders of magnitude higher at 373 K. (paper)

  12. p-n Junction Dynamics Induced in a Graphene Channel by Ferroelectric-Domain Motion in the Substrate

    International Nuclear Information System (INIS)

    Kurchak, Anatolii I.; Eliseev, Eugene A.; Kalinin, Sergei V.; Strikha, Maksym V.; Morozovska, Anna N.

    2017-01-01

    The p - n junction dynamics induced in a graphene channel by stripe-domain nucleation, motion, and reversal in a ferroelectric substrate is explored using a self-consistent approach based on Landau-Ginzburg-Devonshire phenomenology combined with classical electrostatics. Relatively low gate voltages are required to induce the hysteresis of ferroelectric polarization and graphene charge in response to the periodic gate voltage. Pronounced nonlinear hysteresis of graphene conductance with a wide memory window corresponds to high amplitudes of gate voltage. Also, we reveal the extrinsic size effect in the dependence of the graphene-channel conductivity on its length. We predict that the top-gate–dielectric-layer–graphene-channel–ferroelectric-substrate nanostructure considered here can be a promising candidate for the fabrication of the next generation of modulators and rectifiers based on the graphene p - n junctions.

  13. Tunnel currents produced by defects in p-n junctions of GaAs grown on vapor phase

    International Nuclear Information System (INIS)

    Barrales Guadarrama, V R; Rodríguez Rodriguez, E M; Barrales Guadarrama, R; Reyes Ayala, N

    2017-01-01

    With the purpose of assessing if the epitaxy on vapor phase technique “Close Space Vapor Deposition (CSVT)” is capable of produce thin films with adequate properties in order to manufacture p-n junctions, a study of invert and direct current was developed, in a temperature range of 94K to 293K, to junctions p-n of GaAs grown through the technique CSVT. It is shown that the dominant current, within the range 10 -7 to 10 -2 A, is consistent with a currents model of the type of internal emission form field, which shows these currents are due to the presence of localized states in the band gap. (paper)

  14. Van der Waals epitaxial growth and optoelectronics of large-scale WSe2/SnS2 vertical bilayer p-n junctions.

    Science.gov (United States)

    Yang, Tiefeng; Zheng, Biyuan; Wang, Zhen; Xu, Tao; Pan, Chen; Zou, Juan; Zhang, Xuehong; Qi, Zhaoyang; Liu, Hongjun; Feng, Yexin; Hu, Weida; Miao, Feng; Sun, Litao; Duan, Xiangfeng; Pan, Anlian

    2017-12-04

    High-quality two-dimensional atomic layered p-n heterostructures are essential for high-performance integrated optoelectronics. The studies to date have been largely limited to exfoliated and restacked flakes, and the controlled growth of such heterostructures remains a significant challenge. Here we report the direct van der Waals epitaxial growth of large-scale WSe 2 /SnS 2 vertical bilayer p-n junctions on SiO 2 /Si substrates, with the lateral sizes reaching up to millimeter scale. Multi-electrode field-effect transistors have been integrated on a single heterostructure bilayer. Electrical transport measurements indicate that the field-effect transistors of the junction show an ultra-low off-state leakage current of 10 -14 A and a highest on-off ratio of up to 10 7 . Optoelectronic characterizations show prominent photoresponse, with a fast response time of 500 μs, faster than all the directly grown vertical 2D heterostructures. The direct growth of high-quality van der Waals junctions marks an important step toward high-performance integrated optoelectronic devices and systems.

  15. P-n junction diodes with polarization induced p-type graded InxGa1-xN layer

    Science.gov (United States)

    Enatsu, Yuuki; Gupta, Chirag; Keller, Stacia; Nakamura, Shuji; Mishra, Umesh K.

    2017-10-01

    In this study, p-n junction diodes with polarization induced p-type layer are demonstrated on Ga polar (0001) bulk GaN substrates. A quasi-p-type region is obtained by linearly grading the indium composition in un-doped InxGa1-xN layers from 0% to 5%, taking advantage of the piezoelectric and spontaneous polarization fields which exist in group III-nitride heterostructures grown in the typical (0001) or c-direction. The un-doped graded InxGa1-xN layers needed to be capped with a thin Mg-doped InxGa1-xN layer to make good ohmic contacts and to reduce the on-resistance of the p-n diodes. The Pol-p-n junction diodes exhibited similar characteristics compared to reference samples with traditional p-GaN:Mg layers. A rise in breakdown voltage from 30 to 110 V was observed when the thickness of the graded InGaN layer was increased from 100 to 600 nm at the same grade composition.

  16. A multiple p-n junction structure obtained from as-grown Czochralski silicon crystals by heat treatment - Application to solar cells

    Science.gov (United States)

    Chi, J. Y.; Gatos, H. C.; Mao, B. Y.

    1980-01-01

    Multiple p-n junctions have been prepared in as-grown Czochralski p-type silicon through overcompensation near the oxygen periodic concentration maxima by oxygen thermal donors generated during heat treatment at 450 C. Application of the multiple p-n-junction configuration to photovoltaic energy conversion has been investigated. A new solar-cell structure based on multiple p-n-junctions was developed. Theoretical analysis showed that a significant increase in collection efficiency over the conventional solar cells can be achieved.

  17. The influence of defects produced by high energy electrons on the electrical characteristics of p-n junctions

    International Nuclear Information System (INIS)

    Koch, L.; Van Dong, N.

    1961-01-01

    The life-time of minority carriers in semi-conductors is very sensitive to the presence of defects introduced by high-energy electrons. The formation of defects thus affects the short-circuiting current and the open circuit voltage of a p-n junction, these being dependent on the life-time. In the work presented, we have bombarded several types of germanium and silicon junctions with 2 MeV electrons from a Van der Graaff, and with β-particles from radioactive sources. The experiments were carried out both at ordinary temperatures and that of liquid air. In this latter case an anomaly in the electron-volt effect was found: the short-circuiting current and the voltage in vacuo, after an initial decrease, increase again and exceed their initial maximum value before once more decreasing. A qualitative interpretation of this abnormal effect is given. (author) [fr

  18. Performance of ultra high efficiency thin germanium p-n junction solar cells intended for solar thermophotovoltaic application

    Energy Technology Data Exchange (ETDEWEB)

    Vera, E S; Loferski, J J; Spitzer, M; Schewchun, J

    1981-01-01

    The theoretical upper limit conversion efficiency as a function of cell thickness and junction position is calculated for a germanium p-n junction solar cell intended for solar thermophotovoltaic energy conversion which incorporates minority carrier mirrors and optical mirrors on both the front and back boundaries of the active part of the device. The optical mirrors provide light confinement reducing the thickness required for optimum performance while minority carrier mirrors diminish surface recombination of carriers which seriously reduce short circuit current and limit open circuit voltage. The role of non-ideal optical and minority carrier mirrors and the effect of resistivity variations are studied. The calculations are conducted under conditions of high incident power (2-25 W/cm/sup 2/) which are encountered in solar thermophotovoltaic energy conversion systems. 14 refs.

  19. Counterdoped very shallow p+/n junctions obtained by B and Sb implantation and codiffusion in Si

    Science.gov (United States)

    Solmi, Sandro

    1998-02-01

    In this article we investigate the B and Sb codiffusion upon postimplantation annealing in order to fabricate very shallow p+/n junctions (⩽70 nm), suitable for a complementary metal-oxide-semiconductor technology with a channel length of 0.18 μm. The junctions are prepared by implanting Sb and subsequently BF2, at a higher dose, in an n-type Si substrate. The preamorphization with Sb avoids the B channeling and increases the n-type doping in the junction region, thus confining the depth of the p layer. Furthermore, both the transient enhanced diffusion, being the B implanted in a preamorphized layer, and the standard diffusion, due to the pairing between donors and acceptors, are strongly reduced. This procedure allows us to obtain very shallow junctions even after annealings with relatively high thermal budget, like 800 °C/8 h or 900 °C/1 h, or 950 °C/10 min or 1000 °C/60 s. We verified that dopant diffusion is strongly affected by a direct donor-acceptor interaction, and that good prediction of the experimental results can only be obtained using a simulation code which takes into account the formation of neutral, near immobile, Sb-B pairs.

  20. Nuclear radiation detector based on ion implanted p-n junction in 4H-SiC

    International Nuclear Information System (INIS)

    Vervisch, V.; Issa, F.; Ottaviani, L.; Lazar, M.; Kuznetsov, A.; Szalkai, D.; Klix, A.; Lyoussi, A.; Vermeeren, L.; Hallen, A.

    2013-06-01

    In this paper, we propose a new device detector based on ion implanted p-n junction in 4H-SiC for nuclear instrumentation. We showed the interest to use 10 Boron as a Neutron Converter Layer in order to detect thermal neutrons. We present the main results obtained during irradiation tests performed in the Belgian Reactor 1. We show the capability of our detector by means of first results of the detector response at different reverse voltage biases and at different reactor power (authors)

  1. Hybrid p-n junction light-emitting diodes based on sputtered ZnO and organic semiconductors

    International Nuclear Information System (INIS)

    Na, Jong H.; Kitamura, M.; Arita, M.; Arakawa, Y.

    2009-01-01

    We fabricated light-emitting hybrid p-n junction devices using low temperature deposited ZnO and organic films, in which the ZnO and the organic films served as the n- and p-type component, respectively. The devices have a rectification factor as high as ∼10 3 and a current density greater than 2 A/cm 2 . Electroluminescence of the hybrid device shows the mixture of the emission bands arising from radiative charge recombination in organic and ZnO. The substantial device properties could provide various opportunities for low cost and large area multicolor light-emitting sources.

  2. Single Atomically Sharp Lateral Monolayer p-n Heterojunction Solar Cells with Extraordinarily High Power Conversion Efficiency

    KAUST Repository

    Tsai, Meng-Lin; Li, Ming-yang; Duran Retamal, Jose Ramon; Lam, Kai-Tak; Lin, Yung-Chang; Suenaga, Kazu; Chen, Lih-Juann; Liang, Gengchiau; Li, Lain-Jong; He, Jr-Hau

    2017-01-01

    The recent development of 2D monolayer lateral semiconductor has created new paradigm to develop p-n heterojunctions. Albeit, the growth methods of these heterostructures typically result in alloy structures at the interface, limiting

  3. Black Phosphorus-Zinc Oxide Nanomaterial Heterojunction for p-n Diode and Junction Field-Effect Transistor.

    Science.gov (United States)

    Jeon, Pyo Jin; Lee, Young Tack; Lim, June Yeong; Kim, Jin Sung; Hwang, Do Kyung; Im, Seongil

    2016-02-10

    Black phosphorus (BP) nanosheet is two-dimensional (2D) semiconductor with distinct band gap and attracting recent attention from researches because it has some similarity to gapless 2D semiconductor graphene in the following two aspects: single element (P) for its composition and quite high mobilities depending on its fabrication conditions. Apart from several electronic applications reported with BP nanosheet, here we report for the first time BP nanosheet-ZnO nanowire 2D-1D heterojunction applications for p-n diodes and BP-gated junction field effect transistors (JFETs) with n-ZnO channel on glass. For these nanodevices, we take advantages of the mechanical flexibility of p-type conducting of BP and van der Waals junction interface between BP and ZnO. As a result, our BP-ZnO nanodimension p-n diode displays a high ON/OFF ratio of ∼10(4) in static rectification and shows kilohertz dynamic rectification as well while ZnO nanowire channel JFET operations are nicely demonstrated by BP gate switching in both electrostatics and kilohertz dynamics.

  4. A simplified boron diffusion for preparing the silicon single crystal p-n junction as an educational device

    Energy Technology Data Exchange (ETDEWEB)

    Shiota, Koki, E-mail: a14510@sr.kagawa-nct.ac.jp; Kai, Kazuho; Nagaoka, Shiro, E-mail: nagaoka@es.kagawa-nct.ac.jp [National Institute of Technology, Kagawa College, Kagawa, Mitoyo, Takuma, Koda 551 (Japan); Tsuji, Takuto [National Institute of Technology, Suzuka College, Mie, Suzuka, Shiroko (Japan); Wakahara, Akihiro [Toyohashi University of Technology, Aichi, Toyohashi, Tenpaku, Hibarigaoka 1-1 (Japan); Rusop, Mohamad [University Technology Mara, Selangor, Shah Alam, 40450 (Malaysia)

    2016-07-06

    The educational method which is including designing, making, and evaluating actual semiconductor devices with learning the theory is one of the best way to obtain the fundamental understanding of the device physics and to cultivate the ability to make unique ideas using the knowledge in the semiconductor device. In this paper, the simplified Boron thermal diffusion process using Sol-Gel material under normal air environment was proposed based on simple hypothesis and the feasibility of the reproducibility and reliability were investigated to simplify the diffusion process for making the educational devices, such as p-n junction, bipolar and pMOS devices. As the result, this method was successfully achieved making p+ region on the surface of the n-type silicon substrates with good reproducibility. And good rectification property of the p-n junctions was obtained successfully. This result indicates that there is a possibility to apply on the process making pMOS or bipolar transistors. It suggests that there is a variety of the possibility of the applications in the educational field to foster an imagination of new devices.

  5. Design and Simulation of InGaN p-n Junction Solar Cell

    Directory of Open Access Journals (Sweden)

    A. Mesrane

    2015-01-01

    Full Text Available The tunability of the InGaN band gap energy over a wide range provides a good spectral match to sunlight, making it a suitable material for photovoltaic solar cells. The main objective of this work is to design and simulate the optimal InGaN single-junction solar cell. For more accurate results and best configuration, the optical properties and the physical models such as the Fermi-Dirac statistics, Auger and Shockley-Read-Hall recombination, and the doping and temperature-dependent mobility model were taken into account in simulations. The single-junction In0.622Ga0.378N (Eg = 1.39 eV solar cell is the optimal structure found. It exhibits, under normalized conditions (AM1.5G, 0.1 W/cm2, and 300 K, the following electrical parameters: Jsc=32.6791 mA/cm2, Voc=0.94091 volts, FF = 86.2343%, and η=26.5056%. It was noticed that the minority carrier lifetime and the surface recombination velocity have an important effect on the solar cell performance. Furthermore, the investigation results show that the In0.622Ga0.378N solar cell efficiency was inversely proportional with the temperature.

  6. Analysis of the photo voltage decay /PVD/ method for measuring minority carrier lifetimes in P-N junction solar cells

    Science.gov (United States)

    Von Roos, O.

    1981-01-01

    The photo voltage decay (PVD) method for the measurement of minority carrier lifetimes in P-N junction solar cells with cell thickness comparable to or even less than the minority carrier diffusion length is examined. The method involves the generation of free carriers in the quasi-neutral bulk material by flashes of light and the monitoring of the subsequent decay of the induced open-circuit voltages as the carriers recombine, which is dependent on minority carrier recombination lifetime. It is shown that the voltage versus time curve for an ordinary solar cell (N(+)-P junction) is proportional to the inverse minority carrier lifetime plus a factor expressing the ratio of diffusion length to cell thickness. In the case of an ideal back-surface-field cell (N(+)-P-P(+) junction) however, the slope is directly proportional to the inverse minority carrier lifetime. It is noted that since most BSF cells are not ideal, possessing a sizable back surface recombination velocity, the PVD measurements must be treated with caution and supplemented with other nonstationary methods.

  7. Inductively Coupled Plasma-Induced Etch Damage of GaN p-n Junctions

    International Nuclear Information System (INIS)

    SHUL, RANDY J.; ZHANG, LEI; BACA, ALBERT G.; WILLISON, CHRISTI LEE; HAN, JUNG; PEARTON, S.J.; REN, F.

    1999-01-01

    Plasma-induced etch damage can degrade the electrical and optical performance of III-V nitride electronic and photonic devices. We have investigated the etch-induced damage of an Inductively Coupled Plasma (ICP) etch system on the electrical performance of mesa-isolated GaN pn-junction diodes. GaN p-i-n mesa diodes were formed by Cl 2 /BCl 3 /Ar ICP etching under different plasma conditions. The reverse leakage current in the mesa diodes showed a strong relationship to chamber pressure, ion energy, and plasma flux. Plasma induced damage was minimized at moderate flux conditions (≤ 500 W), pressures ≥2 mTorr, and at ion energies below approximately -275 V

  8. Realization of p-n junction solar cells by an ion implantation doping procedure

    International Nuclear Information System (INIS)

    Muller, J.C.; Hage-Ali, M.; Siffert, P.

    1978-01-01

    The possibility of using a low cost ion implantation procedure for the preparation of junction solar cells has been investigated. The method employs a d.c. glow discharge ion source and a short post acceleration structure, without any mass separation. Preparation of the cells in a continuous way is possible at competitive speeds since the ion beam current density reaches 1 mA/cm 2 . The properties of silicon cells, obtained by discharge bombardment in BF 3 or PF 5 atmosphere followed by recristallisation of the damaged layer either by thermal annealing or fast surface laser pulses, have been investigated. Rutherford backscattering, SIMS, electrical measurements have been used. Finally, characteristics and performance of the devices are presented

  9. Influence of electron irradiation at elevated temperatures on silicon diffuse structures with p-n-junctions

    International Nuclear Information System (INIS)

    Korshunov, F.P.; Marchenko, I.G.

    2012-01-01

    The behavior of the lifetime of nonequilibrium carriers (τ), reverse current (I R ), and forward voltage drop (U F ) in industrial p + -n-n + -diodes irradiated with electrons (E=6 MeV) at temperatures for the range T irr = 20-400 Celsius degree was investigated. The tests were conducted on the samples manufactured on phosphorous doped single-crystal Si during the CZ growing process of ingot (KAF) and using the nuclear reactions (KOF). The investigation showed that the problem to reach smaller τ values with a minimal increase of U F and I R in fast diodes can be solved by means of selection of a technological irradiation temperature regime. It was determined that the comparable changes of the τ value in the diode base area, the best trade-off of U F and I R in the samples (KAF) is observed at T irr = 300 Celsius degree, and in the KOF samples at T irr = 350 Celsius degree. (authors)

  10. DLTS spectra of silicon diodes with p+-n-junction irradiated with high energy krypton ions

    Directory of Open Access Journals (Sweden)

    Nikolai A. Poklonski

    2016-06-01

    Full Text Available p+-n-Diodes have been studied. The diodes were manufactured on wafers (thickness 460 μm, (111 plane of uniformly phosphorus doped float-zone-grown single-crystal silicon. The resistivity of silicon was 90 Ω cm and the phosphorus concentration was 5×1013 cm−3. The diodes were irradiated with 250 MeV krypton ions. The irradiation fluence was 108 cm−2. Deep-level transient spectroscopy (DLTS was used to examine the defects induced by high energy krypton ion implantation. The DLTS spectra were recorded at a frequency of 1 MHz in the 78–290 K temperature range. The capacity-voltage characteristics have been measured at a reverse bias voltage from 0 to −19 V at a frequency of 1 MHz. We show that the main irradiation-induced defects are A-centers and divacancies. The behavior of DLTS spectra in the 150–260 K temperature range depends essentially on the emission voltage Ue. The variation of Ue allows us to separate the contributions of different defects into the DLTS spectrum in the 150–260 K temperature range. We show that, in addition to A-centers and divacancies, irradiation produces multivacancy complexes with the energy level Et = Ec−(0.5±0.02 eV and an electron capture cross section of ~4×10–13 cm2.

  11. Site-selective dopant profiling of p-n junction specimens in the dual-beam FIB/SEM system

    International Nuclear Information System (INIS)

    Chee, K W A; Beanland, R; Midgley, P A; Humphreys, C J

    2010-01-01

    Results from site-specific dopant profiling in a dual-beam FIB/SEM system are reported. Si specimens containing p-n junctions were milled using Ga + ion beam energies ranging from 30 keV to 2 keV, and analysed in situin the vacuum chamber. We compare the dopant contrast observed when milling a cleaved surface to that obtained from a side-wall of a trench cut using 30 kV Ga + ions, and using successively lower ion beam energies. The latter technique is suitable for site-specific dopant profiling. We find that lower energy ion beam milling significantly improves contrast, but only achieves 50 % of that observed on a freshly-cleaved surface. Furthermore, the contrast on a side-wall previously milled using high energy Ga + ions is less than that of a cleaved surface subjected to the same ion beam energy.

  12. Operando x-ray photoelectron emission microscopy for studying forward and reverse biased silicon p-n junctions

    Energy Technology Data Exchange (ETDEWEB)

    Barrett, N., E-mail: nick.barrett@cea.fr; Gottlob, D. M.; Mathieu, C.; Lubin, C. [SPEC, CEA, CNRS, Université Paris-Saclay, CEA Saclay, 91191 Gif-sur-Yvette Cedex (France); Passicousset, J. [SPEC, CEA, CNRS, Université Paris-Saclay, CEA Saclay, 91191 Gif-sur-Yvette Cedex (France); IFP Energies nouvelles, Rond-point de l’échangeur de Solaize, BP 3, 69360 Solaize (France); Renault, O.; Martinez, E. [University Grenoble-Alpes, 38000 Grenoble, France and CEA, LETI, MINATEC Campus, 38054 Grenoble (France)

    2016-05-15

    Significant progress in the understanding of surfaces and interfaces of materials for new technologies requires operando studies, i.e., measurement of chemical, electronic, and magnetic properties under external stimulus (such as mechanical strain, optical illumination, or electric fields) applied in situ in order to approach real operating conditions. Electron microscopy attracts much interest, thanks to its ability to determine semiconductor doping at various scales in devices. Spectroscopic photoelectron emission microscopy (PEEM) is particularly powerful since it combines high spatial and energy resolution, allowing a comprehensive analysis of local work function, chemistry, and electronic structure using secondary, core level, and valence band electrons, respectively. Here we present the first operando spectroscopic PEEM study of a planar Si p-n junction under forward and reverse bias. The method can be used to characterize a vast range of materials at near device scales such as resistive oxides, conducting bridge memories and domain wall arrays in ferroelectrics photovoltaic devices.

  13. Deep level transient spectroscopic analysis of p/n junction implanted with boron in n-type silicon substrate

    Science.gov (United States)

    Wakimoto, Hiroki; Nakazawa, Haruo; Matsumoto, Takashi; Nabetani, Yoichi

    2018-04-01

    For P-i-N diodes implanted and activated with boron ions into a highly-resistive n-type Si substrate, it is found that there is a large difference in the leakage current between relatively low temperature furnace annealing (FA) and high temperature laser annealing (LA) for activation of the p-layer. Since electron trap levels in the n-type Si substrate is supposed to be affected, we report on Deep Level Transient Spectroscopy (DLTS) measurement results investigating what kinds of trap levels are formed. As a result, three kinds of electron trap levels are confirmed in the region of 1-4 μm from the p-n junction. Each DLTS peak intensity of the LA sample is smaller than that of the FA sample. In particular, with respect to the trap level which is the closest to the silicon band gap center most affecting the reverse leakage current, it was not detected in LA. It is considered that the electron trap levels are decreased due to the thermal energy of LA. On the other hand, four kinds of trap levels are confirmed in the region of 38-44 μm from the p-n junction and the DLTS peak intensities of FA and LA are almost the same, considering that the thermal energy of LA has not reached this area. The large difference between the reverse leakage current of FA and LA is considered to be affected by the deep trap level estimated to be the interstitial boron.

  14. 5.0 kV breakdown-voltage vertical GaN p-n junction diodes

    Science.gov (United States)

    Ohta, Hiroshi; Hayashi, Kentaro; Horikiri, Fumimasa; Yoshino, Michitaka; Nakamura, Tohru; Mishima, Tomoyoshi

    2018-04-01

    A high breakdown voltage of 5.0 kV has been achieved for the first time in vertical GaN p-n junction diodes by using our newly developed guard-ring structures. A resistance device was inserted between the main diode portion and the guard-ring portion in a ring-shaped p-n diode to generate a voltage drop over the resistance device by leakage current flowing through the guard-ring portion under negatively biased conditions before breakdown. The voltage at the outer mesa edge of the guard-ring portion, where the electric field intensity is highest and the destructive breakdown usually occurs, is decreased by the voltage drop, so the electric field concentration in the portion is reduced. By adopting this structure, the breakdown voltage (V B) is raised by about 200 V. Combined with a low measured on-resistance (R on) of 1.25 mΩ cm2, Baliga’s figure of merit (V\\text{B}2/R\\text{on}) was as high as 20 GW/cm2.

  15. The nonideality coefficient of current-voltage characteristics for p-n junctions in a high ultrahigh-frequency (microwave) field

    International Nuclear Information System (INIS)

    Shamirzaev, S. H.; Gulyamov, G.; Dadamirzaev, M. G.; Gulyamov, A. G.

    2009-01-01

    The effect of heating of electrons and holes on the nonideality coefficient of the current-voltage characteristic for a p-n junction in a high microwave field is studied. It is established that the nonideality coefficient for a diode depends on the type of charge carriers that make the major contribution to the current in the p-n junction. It is shown that, in some cases in silicon samples, the nonideality coefficient for the diode is governed by the temperature for holes in spite of the fact that the temperature for electrons is higher than the temperature for holes.

  16. High-resolution scanning near-field EBIC microscopy: Application to the characterisation of a shallow ion implanted p+-n silicon junction

    International Nuclear Information System (INIS)

    Smaali, K.; Faure, J.; El Hdiy, A.; Troyon, M.

    2008-01-01

    High-resolution electron beam induced current (EBIC) analyses were carried out on a shallow ion implanted p + -n silicon junction in a scanning electron microscope (SEM) and a scanning probe microscope (SPM) hybrid system. With this scanning near-field EBIC microscope, a sample can be conventionally imaged by SEM, its local topography investigated by SPM and high-resolution EBIC image simultaneously obtained. It is shown that the EBIC imaging capabilities of this combined instrument allows the study of p-n junctions with a resolution of about 20 nm

  17. Sb{sub 2}S{sub 3}:C/CdS p-n junction by laser irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Arato, A. [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, San Nicolas de los Garza, Nuevo Leon (Mexico); Centro de Innovacion, Investigacion y Desarrollo en Ingenieria y Tecnologia-Universidad Autonoma de Nuevo Leon, Apodaca, Nuevo Leon (Mexico); Cardenas, E. [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, San Nicolas de los Garza, Nuevo Leon (Mexico); Shaji, S. [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, San Nicolas de los Garza, Nuevo Leon (Mexico); Centro de Innovacion, Investigacion y Desarrollo en Ingenieria y Tecnologia-Universidad Autonoma de Nuevo Leon, Apodaca, Nuevo Leon (Mexico); O' Brien, J.J.; Liu, J. [Center for Nanoscience, University of Missouri-St. Louis, One University Boulevard, St. Louis, Missouri-63121 (United States); Department of Chemistry and Biochemistry, University of Missouri-St. Louis, One University Boulevard, St. Louis, Missouri-63121 (United States); Castillo, G. Alan; Das Roy, T.K. [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, San Nicolas de los Garza, Nuevo Leon (Mexico); Krishnan, B. [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, San Nicolas de los Garza, Nuevo Leon (Mexico); Centro de Innovacion, Investigacion y Desarrollo en Ingenieria y Tecnologia-Universidad Autonoma de Nuevo Leon, Apodaca, Nuevo Leon (Mexico)], E-mail: bkrishnan@fime.uanl.mx

    2009-02-02

    In this paper, we report laser irradiated carbon doping of Sb{sub 2}S{sub 3} thin films and formation of a p-n junction photovoltaic structure using these films. A very thin carbon layer was evaporated on to chemical bath deposited Sb{sub 2}S{sub 3} thin films of approximately 0.5 {mu}m in thickness. Sb{sub 2}S{sub 3} thin films were prepared from a solution containing SbCl{sub 3} and Na{sub 2}S{sub 2}O{sub 3} at 27 deg. C for 5 h and the films obtained were highly resistive. These C/Sb{sub 2}S{sub 3} thin films were irradiated by an expanded laser beam of diameter approximately 0.5 cm (5 W power, 532 nm Verdi laser), for 2 min at ambient atmosphere. Morphology and composition of these films were analyzed. These films showed p-type conductivity due to carbon diffusion (Sb{sub 2} S{sub 3}:C) by the thermal energy generated by the absorption of laser radiation. In addition, these thin films were incorporated in a photovoltaic structure Ag/Sb{sub 2}S{sub 3}:C/CdS/ITO/Glass. For this, CdS thin film of 50 nm in thickness was deposited on a commercially available ITO coated glass substrate from a chemical bath containing CdCl{sub 2}, sodium citrate, NH{sub 4}OH and thiourea at 70 deg. C . On the CdS film, Sb{sub 2}S{sub 3}/C layers were deposited. This multilayer structure was subjected to the laser irradiation, C/Sb{sub 2}S{sub 3} side facing the beam. The p-n junction formed by p-Sb{sub 2}S{sub 3}:C and n-type CdS showed V{sub oc} = 500 mV and J{sub sc} = 0.5 mA/cm{sup 2} under illumination by a tungsten halogen lamp. This work opens up a new method to produce solar cell structures by laser assisted material processing.

  18. Optimizing performance of silicon-based p-n junction photodetectors by the piezo-phototronic effect.

    Science.gov (United States)

    Wang, Zhaona; Yu, Ruomeng; Wen, Xiaonan; Liu, Ying; Pan, Caofeng; Wu, Wenzhuo; Wang, Zhong Lin

    2014-12-23

    Silicon-based p-n junction photodetectors (PDs) play an essential role in optoelectronic applications for photosensing due to their outstanding compatibility with well-developed integrated circuit technology. The piezo-phototronic effect, a three-way coupling effect among semiconductor properties, piezoelectric polarizations, and photon excitation, has been demonstrated as an effective approach to tune/modulate the generation, separation, and recombination of photogenerated electron-hole pairs during optoelectronic processes in piezoelectric-semiconductor materials. Here, we utilize the strain-induced piezo-polarization charges in a piezoelectric n-ZnO layer to modulate the optoelectronic process initiated in a p-Si layer and thus optimize the performances of p-Si/ZnO NWs hybridized photodetectors for visible sensing via tuning the transport property of charge carriers across the Si/ZnO heterojunction interface. The maximum photoresponsivity R of 7.1 A/W and fastest rising time of 101 ms were obtained from these PDs when applying an external compressive strain of -0.10‰ on the ZnO NWs, corresponding to relative enhancement of 177% in R and shortening to 87% in response time, respectively. These results indicate a promising method to enhance/optimize the performances of non-piezoelectric semiconductor material (e.g., Si) based optoelectronic devices by the piezo-phototronic effect.

  19. The effect of dephasing on edge state transport through p-n junctions in HgTe/CdTe quantum wells.

    Science.gov (United States)

    Zhang, Ying-Tao; Song, Juntao; Sun, Qing-Feng

    2014-02-26

    Using the Landauer-Büttiker formula, we study the effect of dephasing on the transport properties of the HgTe/CdTe p-n junction. It is found that in the HgTe/CdTe p-n junction the topologically protected gapless helical edge states manifest a quantized 2e²/h plateau robust against dephasing, in sharp contrast to the case for the normal HgTe/CdTe quantum well. This robustness of the transport properties of the edge states against dephasing should be attributed to the special construction of the HgTe/CdTe p-n junction, which limits the gapless helical edge states to a very narrow region and thus weakens the influence of the dephasing on the gapless edge states to a large extent. Our results demonstrate that the p-n junction could be a substitute device for use in experimentally observing the robust edge states and quantized plateau. Finally, we present a feasible scheme based on current experimental methods.

  20. Single Atomically Sharp Lateral Monolayer p-n Heterojunction Solar Cells with Extraordinarily High Power Conversion Efficiency

    KAUST Repository

    Tsai, Meng-Lin

    2017-06-26

    The recent development of 2D monolayer lateral semiconductor has created new paradigm to develop p-n heterojunctions. Albeit, the growth methods of these heterostructures typically result in alloy structures at the interface, limiting the development for high-efficiency photovoltaic (PV) devices. Here, the PV properties of sequentially grown alloy-free 2D monolayer WSe-MoS lateral p-n heterojunction are explores. The PV devices show an extraordinary power conversion efficiency of 2.56% under AM 1.5G illumination. The large surface active area enables the full exposure of the depletion region, leading to excellent omnidirectional light harvesting characteristic with only 5% reduction of efficiency at incident angles up to 75°. Modeling studies demonstrate the PV devices comply with typical principles, increasing the feasibility for further development. Furthermore, the appropriate electrode-spacing design can lead to environment-independent PV properties. These robust PV properties deriving from the atomically sharp lateral p-n interface can help develop the next-generation photovoltaics.

  1. Tuning of optical and electrical properties of wide band gap Fe:SnO{sub 2}/Li:NiO p-n junctions using 80 MeV oxygen ion beam

    Energy Technology Data Exchange (ETDEWEB)

    Mistry, Bhaumik V.; Joshi, U.S. [Gujarat University, Department of Physics, School of Sciences, Ahmedabad (India); Avasthi, D.K. [Inter University Accelerator Centre, New Delhi (India)

    2016-12-15

    Electrical and optical properties of pristine and swift heavy ion (SHI) irradiated p-n junction diode have been investigated for advanced electronics application. Fe:SnO{sub 2}/Li:NiO p-n junction was fabricated by using pulsed laser deposition on c-sapphire substrate. The optical band gaps of Fe:SnO{sub 2} and Li:NiO films were obtained to be 3.88 and 3.37 eV, respectively. The current-voltage characteristics of the oxide-based p-n junction showed a rectifying behaviour with turn-on voltage of 0.95 V. The oxide-based p-n junction diode was irradiated to 80 MeV O{sup +6} ions with 1 x 10{sup 12} ions/cm{sup 2} fluence. Decrease in grain size due to SHI irradiation is confirmed by the grazing angle X-ray diffraction and atomic force microscopy. In comparison with the pristine p-n junction diode, O{sup +6} ion irradiated p-n junction diode shows the increase of surface roughness and decrease of percentage transmittance in visible region. For irradiated p-n junction diode, current-voltage curve has still rectifying behaviour but exhibits lower turn-on voltage than that of virgin p-n junction diode. (orig.)

  2. Investigation on electrical properties of diffusive p-n junctions in InP and solid solutions of InAssub(x)Psub(1-x)

    International Nuclear Information System (INIS)

    Agaev, Ya.; Atabaev, Kh.; Gazakov, O.

    1977-01-01

    Diodes from InP and from solid solutions of InAssub(0.6)Psub(0.4), InAssub(0.5)Psub(0.5) were obtained by the diffusion of Zn. The voltage-current characteristic was measured at a direct current in the temperature range from 80 to 300 K. The rectification factor is 10 4 and 2.5 -3.0 x10 2 , respectively, for InP and InAssub(x)Psub(1-x) p-n junctions. The lifetime, the series resistance and resistance of the p-n junction at a zero bias were calculated from an analysis of the voltage-current characteristics

  3. Semiconducting ZnSnN{sub 2} thin films for Si/ZnSnN{sub 2} p-n junctions

    Energy Technology Data Exchange (ETDEWEB)

    Qin, Ruifeng [Hebei Engineering Laboratory of Photoelectronic Functional Crystals, Hebei University of Technology (HEBUT), Tianjin 300401 (China); Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences, and Key Laboratory of Additive Manufacturing Materials of Zhejiang Province, Ningbo 315201 (China); Cao, Hongtao; Liang, Lingyan, E-mail: lly@nimte.ac.cn, E-mail: swz@hebut.edu.cn; Xie, Yufang; Zhuge, Fei; Zhang, Hongliang; Gao, Junhua; Javaid, Kashif [Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences, and Key Laboratory of Additive Manufacturing Materials of Zhejiang Province, Ningbo 315201 (China); Liu, Caichi; Sun, Weizhong, E-mail: lly@nimte.ac.cn, E-mail: swz@hebut.edu.cn [Hebei Engineering Laboratory of Photoelectronic Functional Crystals, Hebei University of Technology (HEBUT), Tianjin 300401 (China)

    2016-04-04

    ZnSnN{sub 2} is regarded as a promising photovoltaic absorber candidate due to earth-abundance, non-toxicity, and high absorption coefficient. However, it is still a great challenge to synthesize ZnSnN{sub 2} films with a low electron concentration, in order to promote the applications of ZnSnN{sub 2} as the core active layer in optoelectronic devices. In this work, polycrystalline and high resistance ZnSnN{sub 2} films were fabricated by magnetron sputtering technique, then semiconducting films were achieved after post-annealing, and finally Si/ZnSnN{sub 2} p-n junctions were constructed. The electron concentration and Hall mobility were enhanced from 2.77 × 10{sup 17} to 6.78 × 10{sup 17 }cm{sup −3} and from 0.37 to 2.07 cm{sup 2} V{sup −1} s{sup −1}, corresponding to the annealing temperature from 200 to 350 °C. After annealing at 300 °C, the p-n junction exhibited the optimum rectifying characteristics, with a forward-to-reverse ratio over 10{sup 3}. The achievement of this ZnSnN{sub 2}-based p-n junction makes an opening step forward to realize the practical application of the ZnSnN{sub 2} material. In addition, the nonideal behaviors of the p-n junctions under both positive and negative voltages are discussed, in hope of suggesting some ideas to further improve the rectifying characteristics.

  4. On-chip photonic system using suspended p-n junction InGaN/GaN multiple quantum wells device and multiple waveguides

    International Nuclear Information System (INIS)

    Wang, Yongjin; Zhu, Guixia; Gao, Xumin; Yang, Yongchao; Yuan, Jialei; Shi, Zheng; Zhu, Hongbo; Cai, Wei

    2016-01-01

    We propose, fabricate, and characterize the on-chip integration of suspended p-n junction InGaN/GaN multiple quantum wells (MQWs) device and multiple waveguides on the same GaN-on-silicon platform. The integrated devices are fabricated via a wafer-level process and exhibit selectable functionalities for diverse applications. As the suspended p-n junction InGaN/GaN MQWs device operates under a light emitting diode (LED) mode, part of the light emission is confined and guided by the suspended waveguides. The in-plane propagation along the suspended waveguides is measured by a micro-transmittance setup. The on-chip data transmission is demonstrated for the proof-of-concept photonic integration. As the suspended p-n junction InGaN/GaN MQWs device operates under photodiode mode, the light is illuminated on the suspended waveguides with the aid of the micro-transmittance setup and, thus, coupled into the suspended waveguides. The guided light is finally sensed by the photodiode, and the induced photocurrent trace shows a distinct on/off switching performance. These experimental results indicate that the on-chip photonic integration is promising for the development of sophisticated integrated photonic circuits in the visible wavelength region.

  5. Investigation of p-n-junctions in n-InP based on voltage dependence of differential capacity

    International Nuclear Information System (INIS)

    Agaev, Ja.; Atabaev, Kh.; Gazakov, O.; Sadykov, K.B.

    1976-01-01

    The barrier capacity of alloyed p-n transitions on n-InP crystals grown by the crystallization method has been investigated. The transitions have been obtained by fusing In + 3 - 10% Zn. Step-by-step distribution of the impurity concentration in the space charge layer takes place in the alloyed diodes under investigation. The coefficient characterizing the impurity distribution in the space charge layer has been determined. The well-expressed dependence of I/C 2 =f/u) observed both at a room temperature and at the temperature of liquid nitrogen indicates that the density of ground carriers in the p-n regions are constant at a definite distance from the p-n transition. The main parameters of p-n transitions have been determined

  6. Characterization of vertical GaN p-n diodes and junction field-effect transistors on bulk GaN down to cryogenic temperatures

    Science.gov (United States)

    Kizilyalli, I. C.; Aktas, O.

    2015-12-01

    There is great interest in wide-bandgap semiconductor devices and most recently in vertical GaN structures for power electronic applications such as power supplies, solar inverters and motor drives. In this paper the temperature-dependent electrical behavior of vertical GaN p-n diodes and vertical junction field-effect transistors fabricated on bulk GaN substrates of low defect density (104 to 106 cm-2) is described. Homoepitaxial MOCVD growth of GaN on its native substrate and the ability to control the doping in the drift layers in GaN have allowed the realization of vertical device architectures with drift layer thicknesses of 6 to 40 μm and net carrier electron concentrations as low as 1 × 1015 cm-3. This parameter range is suitable for applications requiring breakdown voltages of 1.2 kV to 5 kV. Mg, which is used as a p-type dopant in GaN, is a relatively deep acceptor (E A ≈ 0.18 eV) and susceptible to freeze-out at temperatures below 200 K. The loss of holes in p-GaN has a deleterious effect on p-n junction behavior, p-GaN contacts and channel control in junction field-effect transistors at temperatures below 200 K. Impact ionization-based avalanche breakdown (BV > 1200 V) in GaN p-n junctions is characterized between 77 K and 423 K for the first time. At higher temperatures the p-n junction breakdown voltage improves due to increased phonon scattering. A positive temperature coefficient in the breakdown voltage is demonstrated down to 77 K; however, the device breakdown characteristics are not as abrupt at temperatures below 200 K. On the other hand, contact resistance to p-GaN is reduced dramatically above room temperature, improving the overall device performance in GaN p-n diodes in all cases except where the n-type drift region resistance dominates the total forward resistance. In this case, the electron mobility can be deconvolved and is found to decrease with T -3/2, consistent with a phonon scattering model. Also, normally-on vertical junction

  7. In situ Ni-doping during cathodic electrodeposition of hematite for excellent photoelectrochemical performance of nanostructured nickel oxide-hematite p-n junction photoanode

    Energy Technology Data Exchange (ETDEWEB)

    Phuan, Yi Wen, E-mail: phuan.yi.wen@monash.edu [School of Engineering, Chemical Engineering Discipline, Monash University Malaysia, Jalan Lagoon Selatan, Bandar Sunway, Selangor DE 47500 (Malaysia); Ibrahim, Elyas, E-mail: meibr2@student.monash.edu [School of Engineering, Chemical Engineering Discipline, Monash University Malaysia, Jalan Lagoon Selatan, Bandar Sunway, Selangor DE 47500 (Malaysia); Chong, Meng Nan, E-mail: Chong.Meng.Nan@monash.edu [School of Engineering, Chemical Engineering Discipline, Monash University Malaysia, Jalan Lagoon Selatan, Bandar Sunway, Selangor DE 47500 (Malaysia); Sustainable Water Alliance, Advanced Engineering Platform, Monash University Malaysia, Jalan Lagoon Selatan, Bandar Sunway, Selangor DE 47500 (Malaysia); Zhu, Tao, E-mail: zhu.tao@monash.edu [School of Engineering, Chemical Engineering Discipline, Monash University Malaysia, Jalan Lagoon Selatan, Bandar Sunway, Selangor DE 47500 (Malaysia); Lee, Byeong-Kyu, E-mail: bklee@ulsan.ac.kr [Department of Civil and Environmental Engineering, University of Ulsan, Nam-gu, Daehakro 93, Ulsan 680-749 (Korea, Republic of); Ocon, Joey D., E-mail: jdocon@up.edu.ph [Laboratory of Electrochemical Engineering (LEE), Department of Chemical Engineering, University of the Philippines Diliman, Quezon City 1101 (Philippines); Chan, Eng Seng, E-mail: chan.eng.seng@monash.edu [School of Engineering, Chemical Engineering Discipline, Monash University Malaysia, Jalan Lagoon Selatan, Bandar Sunway, Selangor DE 47500 (Malaysia)

    2017-01-15

    Highlights: • NiO-hematite p-n junction photoanodes were fabricated via an in situ Ni-doping. • The fundamental mechanism of Ni{sup 2+} ions involved was elucidated. • The optimum Ni dopant was 25 M% for the highest photocurrent density. • It exhibited an excellent photoelectrochemical performance of 7-folds enhancement. - Abstract: Nanostructured nickel oxide-hematite (NiO/α-Fe{sub 2}O{sub 3}) p-n junction photoanodes synthesized from in situ doping of nickel (Ni) during cathodic electrodeposition of hematite were successfully demonstrated. A postulation model was proposed to explain the fundamental mechanism of Ni{sup 2+} ions involved, and the eventual formation of NiO on the subsurface region of hematite that enhanced the potential photoelectrochemical water oxidation process. Through this study, it was found that the measured photocurrent densities of the Ni-doped hematite photoanodes were highly dependent on the concentrations of Ni dopant used. The optimum Ni dopant at 25 M% demonstrated an excellent photoelectrochemical performance of 7-folds enhancement as compared to bare hematite photoanode. This was attributed to the increased electron donor density through the p-n junction and thus lowering the energetic barrier for water oxidation activity at the optimum Ni dopant concentration. Concurrently, the in situ Ni-doping of hematite has also lowered the photogenerated charge carrier transfer resistance as measured using the electrochemical impedance spectroscopy. It is expected that the fundamental understanding gained through this study is helpful for the rational design and construction of highly efficient photoanodes for application in photoelectrochemical process.

  8. In situ Ni-doping during cathodic electrodeposition of hematite for excellent photoelectrochemical performance of nanostructured nickel oxide-hematite p-n junction photoanode

    International Nuclear Information System (INIS)

    Phuan, Yi Wen; Ibrahim, Elyas; Chong, Meng Nan; Zhu, Tao; Lee, Byeong-Kyu; Ocon, Joey D.; Chan, Eng Seng

    2017-01-01

    Highlights: • NiO-hematite p-n junction photoanodes were fabricated via an in situ Ni-doping. • The fundamental mechanism of Ni"2"+ ions involved was elucidated. • The optimum Ni dopant was 25 M% for the highest photocurrent density. • It exhibited an excellent photoelectrochemical performance of 7-folds enhancement. - Abstract: Nanostructured nickel oxide-hematite (NiO/α-Fe_2O_3) p-n junction photoanodes synthesized from in situ doping of nickel (Ni) during cathodic electrodeposition of hematite were successfully demonstrated. A postulation model was proposed to explain the fundamental mechanism of Ni"2"+ ions involved, and the eventual formation of NiO on the subsurface region of hematite that enhanced the potential photoelectrochemical water oxidation process. Through this study, it was found that the measured photocurrent densities of the Ni-doped hematite photoanodes were highly dependent on the concentrations of Ni dopant used. The optimum Ni dopant at 25 M% demonstrated an excellent photoelectrochemical performance of 7-folds enhancement as compared to bare hematite photoanode. This was attributed to the increased electron donor density through the p-n junction and thus lowering the energetic barrier for water oxidation activity at the optimum Ni dopant concentration. Concurrently, the in situ Ni-doping of hematite has also lowered the photogenerated charge carrier transfer resistance as measured using the electrochemical impedance spectroscopy. It is expected that the fundamental understanding gained through this study is helpful for the rational design and construction of highly efficient photoanodes for application in photoelectrochemical process.

  9. Characterization of GaN P-N Junction Grown on Si (111) Substrate by Plasma-assisted Molecular Beam Epitaxy

    International Nuclear Information System (INIS)

    Rosfariza Radzali; Rosfariza Radzali; Mohd Anas Ahmad; Zainuriah Hassan; Norzaini Zainal; Kwong, Y.F.; Woei, C.C.; Mohd Zaki Mohd Yusoff; Mohd Zaki Mohd Yusoff

    2011-01-01

    In this report, the growth of GaN pn junction on Si (111) substrate by plasma assisted molecular beam epitaxy (PAMBE) is presented. Doping of GaN p-n junction has been carried out using Si and Mg as n-type dopant and p-type dopants, respectively. The sample had been characterized by PL, Raman spectroscopy, HR-XRD and SEM. PL spectrum showed strong band edge emission of GaN at ∼364 nm, indicating good quality of the sample. The image of SEM cross section of the sample showed sharp interfaces. The presence of peak ∼657 cm -1 in Raman measurement exhibited successful doping of Mg in the sample. (author)

  10. Summary of theoretical and experimental investigation of grating type, silicon photovoltaic cells. [using p-n junctions on light receiving surface of base crystal

    Science.gov (United States)

    Chen, L. Y.; Loferski, J. J.

    1975-01-01

    Theoretical and experimental aspects are summarized for single crystal, silicon photovoltaic devices made by forming a grating pattern of p/n junctions on the light receiving surface of the base crystal. Based on the general semiconductor equations, a mathematical description is presented for the photovoltaic properties of such grating-like structures in a two dimensional form. The resulting second order elliptical equation is solved by computer modeling to give solutions for various, reasonable, initial values of bulk resistivity, excess carrier concentration, and surface recombination velocity. The validity of the computer model is established by comparison with p/n devices produced by alloying an aluminum grating pattern into the surface of n-type silicon wafers. Current voltage characteristics and spectral response curves are presented for cells of this type constructed on wafers of different resistivities and orientations.

  11. Model of a tunneling current in a p-n junction based on armchair graphene nanoribbons - an Airy function approach and a transfer matrix method

    International Nuclear Information System (INIS)

    Suhendi, Endi; Syariati, Rifki; Noor, Fatimah A.; Khairurrijal; Kurniasih, Neny

    2014-01-01

    We modeled a tunneling current in a p-n junction based on armchair graphene nanoribbons (AGNRs) by using an Airy function approach (AFA) and a transfer matrix method (TMM). We used β-type AGNRs, in which its band gap energy and electron effective mass depends on its width as given by the extended Huckel theory. It was shown that the tunneling currents evaluated by employing the AFA are the same as those obtained under the TMM. Moreover, the calculated tunneling current was proportional to the voltage bias and inversely with temperature

  12. In situ Ni-doping during cathodic electrodeposition of hematite for excellent photoelectrochemical performance of nanostructured nickel oxide-hematite p-n junction photoanode

    Science.gov (United States)

    Phuan, Yi Wen; Ibrahim, Elyas; Chong, Meng Nan; Zhu, Tao; Lee, Byeong-Kyu; Ocon, Joey D.; Chan, Eng Seng

    2017-01-01

    Nanostructured nickel oxide-hematite (NiO/α-Fe2O3) p-n junction photoanodes synthesized from in situ doping of nickel (Ni) during cathodic electrodeposition of hematite were successfully demonstrated. A postulation model was proposed to explain the fundamental mechanism of Ni2+ ions involved, and the eventual formation of NiO on the subsurface region of hematite that enhanced the potential photoelectrochemical water oxidation process. Through this study, it was found that the measured photocurrent densities of the Ni-doped hematite photoanodes were highly dependent on the concentrations of Ni dopant used. The optimum Ni dopant at 25 M% demonstrated an excellent photoelectrochemical performance of 7-folds enhancement as compared to bare hematite photoanode. This was attributed to the increased electron donor density through the p-n junction and thus lowering the energetic barrier for water oxidation activity at the optimum Ni dopant concentration. Concurrently, the in situ Ni-doping of hematite has also lowered the photogenerated charge carrier transfer resistance as measured using the electrochemical impedance spectroscopy. It is expected that the fundamental understanding gained through this study is helpful for the rational design and construction of highly efficient photoanodes for application in photoelectrochemical process.

  13. Preparation of p-type GaN-doped SnO2 thin films by e-beam evaporation and their applications in p-n junction

    Science.gov (United States)

    Lv, Shuliang; Zhou, Yawei; Xu, Wenwu; Mao, Wenfeng; Wang, Lingtao; Liu, Yong; He, Chunqing

    2018-01-01

    Various transparent GaN-doped SnO2 thin films were deposited on glass substrates by e-beam evaporation using GaN:SnO2 targets of different GaN weight ratios. It is interesting to find that carrier polarity of the thin films was converted from n-type to p-type with increasing GaN ratio higher than 15 wt.%. The n-p transition in GaN-doped SnO2 thin films was explained for the formation of GaSn and NO with increasing GaN doping level in the films, which was identified by Hall measurement and XPS analysis. A transparent thin film p-n junction was successfully fabricated by depositing p-type GaN:SnO2 thin film on SnO2 thin film, and a low leakage current (6.2 × 10-5 A at -4 V) and a low turn-on voltage of 1.69 V were obtained for the p-n junction.

  14. Preparation, characterization and activity evaluation of p-n junction photocatalyst p-CaFe2O4/n-Ag3VO4 under visible light irradiation

    International Nuclear Information System (INIS)

    Chen Shifu; Zhao Wei; Liu Wei; Zhang Huaye; Yu Xiaoling; Chen Yinghao

    2009-01-01

    p-n junction photocatalyst p-CaFe 2 O 4 /n-Ag 3 VO 4 was prepared by ball milling Ag 3 VO 4 in H 2 O doped with p-type CaFe 2 O 4 . The structural and optical properties of the photocatalyst were characterized by X-ray powder diffraction (XRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM) and UV-vis diffuse reflection spectrum (DRS). The photocatalytic activity was evaluated by photocatalytic degradation of methylene blue (MB) under visible light irradiation. The results showed that the photocatalytic activity of the p-CaFe 2 O 4 /n-Ag 3 VO 4 was higher than that of Ag 3 VO 4 . When the amount of doped p-CaFe 2 O 4 was 2.0 wt.% and the p-CaFe 2 O 4 /n-Ag 3 VO 4 was ball milled for 12 h, the photocatalytic degradation efficiency was 85.4%. Effect of ball milling time on the photocatalytic activity of the photocatalyst was also investigated. The mechanisms of the increase in the photocatalytic activity were discussed by the p-n junction principle.

  15. Ultra-Shallow P+/N Junction Formation in Si Using Low Temperature Solid Phase Epitaxy Assisted with Laser Activation

    International Nuclear Information System (INIS)

    Hara, Shuhei; Tanaka, Yuki; Fukaya, Takumi; Matsumoto, Satoru; Suzuki, Toshiharu; Fuse, Genshu; Kudo, Toshio; Sakuragi, Susumu

    2008-01-01

    A combination of Ge pre-amorphization implantation (Ge-PAI), low-energy B implantation and laser annealing is a promising method to form highly-activated, abrupt and ultra-shallow junctions (USJ). In our previous report of IIT 2006, we succeeded in forming pn junctions less than 10 nm using non-melt double-pulsed green laser. However, a large leakage current under reverse bias was observed consequently due to residual defects in the implanted layer. In this study, a method to form USJ is proposed: a combination of low-temperature solid phase epitaxy and non-melt laser irradiation for B activation. Ge pre-amorphization implantation was performed at energy of 6 keV with a dose of 3x10 14 /cm 2 . Then B implantation was performed at energy of 0.2 keV with a dose of 1.2x10 15 /cm 2 . Samples were annealed at 400 deg. C for 10 h in nitrogen atmosphere. Subsequently, non-melt laser irradiation was performed at energy of 690 mJ/cm 2 and pulse duration of 100 ns with intervals of 300 ns. As a result, USJ around 10 nm with better crystallinity was successfully formed. And the leakage current of pn diodes was reduced significantly. Moreover, it is proven from secondary ion mass spectroscopy (SIMS) analysis that transient enhanced diffusion (TED) of B is specifically suppressed.

  16. Through space and through bridge channels of charge transfer at p-n nano-junctions: A DFT study

    Energy Technology Data Exchange (ETDEWEB)

    Dandu, Naveen [Department of Chemistry and Biochemistry, NDSU, Fargo, ND 58108 (United States); Tretiak, Sergei [Theoretical Division, Center for Nonlinear Studies (CNLS) and Center for Integrated Nanotechnologies (CINT), Los Alamos National Laboratory, Los Alamos, 57069, NM 87454 (United States); Kilina, Svetlana [Department of Chemistry and Biochemistry, NDSU, Fargo, ND 58108 (United States); Kilin, Dmitri, E-mail: Dmitri.Kilin@ndsu.edu [Department of Chemistry and Biochemistry, NDSU, Fargo, ND 58108 (United States)

    2016-12-20

    Highlights: • Properties of interacting QDs depend on the fashion of interaction: through-bond or through-space. • The disconnected and undoped dimer models shows FÓ§rster band formation. • Dimer models with some doping exhibit degenerate charge-transfer excitons. • p- and n-doped qds shows polarization at the interface. • A photoexcitation polarizes p-n interface, in relation to phototovoltaic effect. - Abstract: Details of charge density distribution at p-n nano interface are analyzed with density functional theory techniques using model system of dimers of doped silicon quantum dots interacting through bond and through space. Spatial distributions of transition densities between the ground and excited states suggest the character of essential electronic excitations, which have a FÓ§rster, bound, unbound, or charge transfer character. A redistribution of electronic density from n-impurities to p-impurities results in a ground state polarization and creates an offset of energies of the bands localized on p-doped quantum dot and the bands localized on n-doped quantum dot. Although impurities contribute very few orbitals to the total density, a ground state charge redistribution and polarization are both responsible for the presence of a large number of charge transfer excitations involving solely silicon orbitals.

  17. Electron-beam-induced current measurements with applied bias provide insight to locally resolved acceptor concentrations at p-n junctions

    Directory of Open Access Journals (Sweden)

    D. Abou-Ras

    2015-07-01

    Full Text Available Electron-beam-induced current (EBIC measurements have been employed for the investigation of the local electrical properties existing at various types of electrical junctions during the past decades. In the standard configuration, the device under investigation is analyzed under short-circuit conditions. Further insight into the function of the electrical junction can be obtained when applying a bias voltage. The present work gives insight into how EBIC measurements at applied bias can be conducted at the submicrometer level, at the example of CuInSe2 solar cells. From the EBIC profiles acquired across ZnO/CdS/CuInSe2/Mo stacks exhibiting p-n junctions with different net doping densities in the CuInSe2 layers, values for the width of the space-charge region, w, were extracted. For all net doping densities, these values decreased with increasing applied voltage. Assuming a linear relationship between w2 and the applied voltage, the resulting net doping densities agreed well with the ones obtained by means of capacitance-voltage measurements.

  18. Modulation of Quantum Tunneling via a Vertical Two-Dimensional Black Phosphorus and Molybdenum Disulfide p-n Junction.

    Science.gov (United States)

    Liu, Xiaochi; Qu, Deshun; Li, Hua-Min; Moon, Inyong; Ahmed, Faisal; Kim, Changsik; Lee, Myeongjin; Choi, Yongsuk; Cho, Jeong Ho; Hone, James C; Yoo, Won Jong

    2017-09-26

    Diverse diode characteristics were observed in two-dimensional (2D) black phosphorus (BP) and molybdenum disulfide (MoS 2 ) heterojunctions. The characteristics of a backward rectifying diode, a Zener diode, and a forward rectifying diode were obtained from the heterojunction through thickness modulation of the BP flake or back gate modulation. Moreover, a tunnel diode with a precursor to negative differential resistance can be realized by applying dual gating with a solid polymer electrolyte layer as a top gate dielectric material. Interestingly, a steep subthreshold swing of 55 mV/dec was achieved in a top-gated 2D BP-MoS 2 junction. Our simple device architecture and chemical doping-free processing guaranteed the device quality. This work helps us understand the fundamentals of tunneling in 2D semiconductor heterostructures and shows great potential in future applications in integrated low-power circuits.

  19. Zn doping induced conductivity transformation in NiO films for realization of p-n homo junction diode

    Science.gov (United States)

    Dewan, Sheetal; Tomar, Monika; Tandon, R. P.; Gupta, Vinay

    2017-06-01

    Mixed transition metal oxide, zinc doped NiO, Z n x N i 1 - x O (x = 0, 0.01, 0.02, 0.05, and 0.10), thin films have been fabricated by the RF magnetron sputtering technique in an oxygen deficit ambience at a growth temperature of 400 °C. The present report highlights the effect of Zn doping in NiO thin films on its structural, optical, and electrical properties. Optical transmission enhancement and band gap engineering in a-axis oriented NiO films have been demonstrated via Zn substitution. Hall effect measurements of the prepared samples revealed a transition from p-type to n-type conductivity in NiO at 2% Zn doping. A NiO based transparent p-n homojunction diode has been fabricated successfully, and the conduction mechanism dominating the diode properties is reported in detail. Current-voltage (I-V) characteristics of the homojunction diode are found to obey the Space Charge Limited Conduction mechanism with non-ideal square law behaviour.

  20. Polarization-enhanced InGaN/GaN-based hybrid tunnel junction contacts to GaN p-n diodes and InGaN LEDs

    Science.gov (United States)

    Mughal, Asad J.; Young, Erin C.; Alhassan, Abdullah I.; Back, Joonho; Nakamura, Shuji; Speck, James S.; DenBaars, Steven P.

    2017-12-01

    Improved turn-on voltages and reduced series resistances were realized by depositing highly Si-doped n-type GaN using molecular beam epitaxy on polarization-enhanced p-type InGaN contact layers grown using metal-organic chemical vapor deposition. We compared the effects of different Si doping concentrations and the addition of p-type InGaN on the forward voltages of p-n diodes and light-emitting diodes, and found that increasing the Si concentrations from 1.9 × 1020 to 4.6 × 1020 cm-3 and including a highly doped p-type InGaN at the junction both contributed to reductions in the depletion width, the series resistance of 4.2 × 10-3-3.4 × 10-3 Ω·cm2, and the turn-on voltages of the diodes.

  1. Effect of Plasma, RF, and RIE Treatments on Properties of Double-Sided High Voltage Solar Cells with Vertically Aligned p-n Junctions

    Directory of Open Access Journals (Sweden)

    Mykola O. Semenenko

    2016-01-01

    Full Text Available Si-based solar cells with vertically aligned p-n junctions operating at high voltage were designed and fabricated. The plasma treatments and antireflection coating deposition on the working surfaces of both single- and multijunction cells were made using the special holders. It was shown that additional treatment of solar cells in argon plasma prior to hydrogen plasma treatment and deposition of diamond-like carbon antireflection films led to the improvement of the cell efficiency by up to 60%. Radio frequency waves support plasma generation and improve photoelectric conversion mainly due to reduction of internal stresses at the interfaces. Application of reactive ion etching technique removes the broken layer, reduces elastic strain in the wafer, decreases recombination of charge carriers in the bulk, and provides cell efficiency increase by up to ten times.

  2. High-speed carrier-depletion silicon Mach-Zehnder optical modulators with lateral PN junctions

    Directory of Open Access Journals (Sweden)

    Graham Trevor Reed

    2014-12-01

    Full Text Available This paper presents new experimental data from a lateral PN junction silicon Mach-Zehnder optical modulator. Efficiencies in the 1.4V.cm to 1.9V.cm range are demonstrated for drive voltages between 0V and 6V. High speed operation up to 52Gbit/s is also presented. The performance of the device which has its PN junction positioned in the centre of the waveguide is then compared to previously reported data from a lateral PN junction device with the junction self-aligned to the edge of the waveguide rib. An improvement in modulation efficiency is demonstrated when the junction is positioned in the centre of the waveguide. Finally we propose schemes for achieving high modulation efficiency whilst retaining self-aligned formation of the PN junction.

  3. p - n junction diodes fabricated from isolated electrospun fibers of (P(NDI2ODT2)) and an inorganic p-doped semiconductor

    Science.gov (United States)

    Rosado, Alexander; Pinto, Nicholas

    2013-03-01

    A simple method to fabricate, under ambient conditions and within seconds, p - n diodes using an individual electrospun poly{[N, N'-bis(2-octyldodecyl)-naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diyl]-alt-5,5'-(2,2'-bithiophene)}-(P(NDI2ODT2)) fiber and a commercially available p-doped Si/SiO2 substrate is presented. Band bending at the fiber/Si+ interface leads to asymmetric I-V characteristic curves resembling that of a diode. The diode turn-on voltage was in the range 1V and was unaffected via UV light irradiation. The rectification ratio however could be tuned reversibly thereby making this device multifunctional. In addition to being a rectifier, the advantage of our design is the complete exposure of the rectifying junction to the surrounding environment. This has the advantage of making them attractive candidates in the potential fabrication of low power, sensitive and rapid response photo-sensors. NSF

  4. Effect of low temperature and electron irradiation on the volt-ampere characteristics of silicon structures with p-n junctions; Vliyanie nizkikh temperatur i ehlektronnogo oblucheniya na vol`t-ampernye kharakteristiki kremnievykh struktur s p-n perekhodami

    Energy Technology Data Exchange (ETDEWEB)

    Korshunov, F P [and others

    1994-12-31

    Features of volt-ampere characteristic behaviour of silicon, diffusion p-n-p structures making up the basis of force diodes under their operation in the mode of nominal and overload current densities are investigated.

  5. Gas-liquid flow splitting in T-junction with inclined lateral arm

    Science.gov (United States)

    Yang, Le-le; Liu, Shuo; Li, Hua; Zhang, Jian; Wu, Ying-xiang; Xu, Jing-yu

    2018-02-01

    This paper studies the gas-liquid flow splitting in T-junction with inclined lateral arm. The separation mechanism of the T-junction is related to the pressure distribution in the T-junction. It is shown that the separation efficiency strongly depends on the inclination angle, when the angle ranges from 0° to 30°, while not so strongly for angles in the range from 30° to 90° Increasing the number of connecting tubes is helpful for the gas-liquid separation, and under the present test conditions, with four connecting tubes, a good separation performance can be achieved. Accordingly, a multi-tube Y-junction separator with four connecting tubes is designed for the experimental investigation. A good agreement between the simulated and measured data shows that there is an optimal split ratio to achieve the best performance for the multi-tube Y-junction separator.

  6. Lateral n-p-n bipolar transistors by ion implantation into semi-insulating GaAs

    International Nuclear Information System (INIS)

    Canfield, P.; Forbes, L.

    1988-01-01

    GaAs bipolar transistors have not seen the major development effort that GaAs MESFETs have due primarily to the short minority carrier lifetimes in GaAs. The short minority carrier lifetimes require that the base region be very thin which, if done by implantation, requires that the doping be high to obtain a well defined base profile. These requirements are very difficult to achieve in GaAs and typically, if high current gain and high speed are desired for a bipolar technology, then heterostructure bipolars are the appropriate technology, although the cost of heterostructure devices will be prohibitive for some time to come. For applications requiring low current gain, more modest fabrication rules can be followed. Lateral bipolars are particularly attractive since they would be easier to fabricate than a planar bipolar or a heterojunction bipolar. Lateral bipolars do not require steps or deep contacts to make contact with the subcollector or highly doped very thin epilayers for the base region and they can draw upon the semi-insulating properties of the GaAs substrates for device isolation. Bipolar transistors are described and shown to work successfully. (author)

  7. Impact of fluorine co-implantation on B deactivation and leakage currents in low and high energy Ge preamorphised p+n shallow junctions

    International Nuclear Information System (INIS)

    Girginoudi, D.; Tsiarapas, C.

    2008-01-01

    The impact of fluorine (F) co-implantation on boron (B) deactivation and B TED, as well as on the I-V characteristics of p + n shallow junctions, have been studied for low (10 keV) and high (70 keV) energy Ge preamorphised (PAI) n-type Si samples, that were annealed at 600 deg. C and 700 deg. C. Transmission electron microscopy revealed the existence of defects and dislocation loops (DLs) in the EOR region. It has been found that F stabilizes the EOR defect population via the increase of EOR defect density and the percentage of the stable DLs. This phenomenon is more pronounced when the preamorphisation is shallow (10 keV Ge energy). SIMS and sheet resistance measurements showed the formation of BICs, which implies B deactivation and increased B TED, especially in the shallow PAI samples and at the 700 deg. C annealing temperature. The role of F on B deactivation is multiplex: in the 70 keV PAI samples, and at 600 deg. C annealing temperature, F forms clusters with B causing further B deactivation. In the case of 700 deg. C annealing temperature, F probably forms fluorine-vacancy (F-V) clusters that trap silicon interstitials (Is), thus reducing the possibility of forming BICs and, therefore, resulting in B re-activation and suppression of B TED. Conversely, in the 10-keV PAI samples, and irrespective of the annealing temperature, F improves significantly the sheet resistance, and we suggest that this is a result of the contribution of two physical mechanisms: in the EOR region, F is trapped into DLs, which release less Is than other types of defects. In the amorphous part of Si, there are probably F-V clusters that trap the Is released from the EOR region. Although F in most cases improves B deactivation, it increases the reverse leakage currents, probably due to the stabilization of the EOR defects. As regards the carrier-transport mechanisms, it has been found that the dominant mechanism is the generation-recombination process under forward bias as well as under

  8. Interplay of Chiral and Helical States in a Quantum Spin Hall Insulator Lateral Junction

    Science.gov (United States)

    Calvo, M. R.; de Juan, F.; Ilan, R.; Fox, E. J.; Bestwick, A. J.; Mühlbauer, M.; Wang, J.; Ames, C.; Leubner, P.; Brüne, C.; Zhang, S. C.; Buhmann, H.; Molenkamp, L. W.; Goldhaber-Gordon, D.

    2017-12-01

    We study the electronic transport across an electrostatically gated lateral junction in a HgTe quantum well, a canonical 2D topological insulator, with and without an applied magnetic field. We control the carrier density inside and outside a junction region independently and hence tune the number and nature of 1D edge modes propagating in each of those regions. Outside the bulk gap, the magnetic field drives the system to the quantum Hall regime, and chiral states propagate at the edge. In this regime, we observe fractional plateaus that reflect the equilibration between 1D chiral modes across the junction. As the carrier density approaches zero in the central region and at moderate fields, we observe oscillations in the resistance that we attribute to Fabry-Perot interference in the helical states, enabled by the broken time reversal symmetry. At higher fields, those oscillations disappear, in agreement with the expected absence of helical states when band inversion is lifted.

  9. Co-activation-based parcellation of the lateral prefrontal cortex delineates the inferior frontal junction area

    OpenAIRE

    Muhle-Karbe, Paul Simon; Derrfuss, Jan; Lynn, Maggie; Neubert, Franz Xaver; Fox, Peter; Brass, Marcel; Eickhoff, Simon

    2016-01-01

    The inferior frontal junction (IFJ) area, a small region in the posterior lateral prefrontal cortex (LPFC), has received increasing interest in recent years due to its central involvement in the control of action, attention, and memory. Yet, both its function and anatomy remain controversial. Here, we employed a meta-analytic parcellation of the left LPFC to show that the IFJ can be isolated based on its specific functional connections. A seed region, oriented along the left inferior frontal ...

  10. Diode characteristics and residual deep-level defects of p+n abrupt junctions fabricated by rapid thermal annealing of boron implanted silicon

    International Nuclear Information System (INIS)

    Usami, A.; Katayama, M.; Wada, T.; Tokuda, Y.

    1987-01-01

    p + n diodes were fabricated by rapid thermal annealing (RTA) of boron implanted silicon in the annealing temperature range 700-1100 0 C for around 7 s, and the RTA temperature dependence of electrical characteristics of these diodes was studied. Deep-level transient spectroscopy (DLTS) measurements were made to evaluate residual deep-level defects in the n-type bulk. Three electron traps were observed in p + n diodes fabricated by RTA at 700 0 C. It was considered that these three traps were residual point defects near the tail of the implantation damage after RTA. Residual defect concentrations increased in the range 700-900 0 C and decreased in the range 1000-1100 0 C. The growth of defects in the bulk was ascribed to the diffusion of defects from the implanted layer during RTA. Concentrations of electron traps observed in p + n diodes fabricated by RTA at 1100 0 C were approx. 10 12 cm -3 . It was found that these residual deep-level defects observed by DLTS were inefficient generation-recombination centres since the reverse current was independent of the RTA temperatures. (author)

  11. Large lateral photovoltaic effect with ultrafast relaxation time in SnSe/Si junction

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Xianjie; Zhao, Xiaofeng; Hu, Chang; Zhang, Yang; Song, Bingqian; Zhang, Lingli; Liu, Weilong; Lv, Zhe; Zhang, Yu; Sui, Yu, E-mail: suiyu@hit.edu.cn [Department of Physics, Harbin Institute of Technology, Harbin 150001 (China); Tang, Jinke [Department of Physics and Astronomy, University of Wyoming, Laramie, Wyoming 82071 (United States); Song, Bo, E-mail: songbo@hit.edu.cn [Department of Physics, Harbin Institute of Technology, Harbin 150001 (China); Academy of Fundamental and Interdisciplinary Sciences, Harbin Institute of Technology, Harbin 150001 (China)

    2016-07-11

    In this paper, we report a large lateral photovoltaic effect (LPE) with ultrafast relaxation time in SnSe/p-Si junctions. The LPE shows a linear dependence on the position of the laser spot, and the position sensitivity is as high as 250 mV mm{sup −1}. The optical response time and the relaxation time of the LPE are about 100 ns and 2 μs, respectively. The current-voltage curve on the surface of the SnSe film indicates the formation of an inversion layer at the SnSe/p-Si interface. Our results clearly suggest that most of the excited-electrons diffuse laterally in the inversion layer at the SnSe/p-Si interface, which results in a large LPE with ultrafast relaxation time. The high positional sensitivity and ultrafast relaxation time of the LPE make the SnSe/p-Si junction a promising candidate for a wide range of optoelectronic applications.

  12. Radiation effects on the current-voltage and capacitance-voltage characteristics of advanced p-n junction diodes surrounded by shallow trench isolation

    International Nuclear Information System (INIS)

    Poyai, A.; Simoen, E.; Claeys, C.; Hayama, K.; Kobayashi, K.; Ohyama, H.

    2002-01-01

    This paper investigates the impact of 20 MeV proton irradiation on the current-voltage (I-V) and capacitance-voltage (C-V) characteristics of different geometry n + -p-well junction diodes surrounded by shallow trench isolation and processed in a 0.18 μm CMOS technology. From I-V characteristics, a higher current damage coefficient was found for the bulk than for the peripheral component. The radiation-induced boron de-activation resulted in a lowering of the p-well doping, which has been derived from high-frequency C-V measurements. This was confirmed by deep level transient spectroscopy (DLTS) analysis, revealing the presence of interstitial boron related radiation defects. As will be demonstrated for the bulk leakage-current damage coefficient, the electric field enhanced generation rate of charge carriers and the radiation-induced boron de-activation should be accounted for properly

  13. Topological Insulator Bi2Se3/Si-Nanowire-Based p-n Junction Diode for High-Performance Near-Infrared Photodetector.

    Science.gov (United States)

    Das, Biswajit; Das, Nirmalya S; Sarkar, Samrat; Chatterjee, Biplab K; Chattopadhyay, Kalyan K

    2017-07-12

    Chemically derived topological insulator Bi 2 Se 3 nanoflake/Si nanowire (SiNWs) heterojunctions were fabricated employing all eco-friendly cost-effective chemical route for the first time. X-ray diffraction studies confirmed proper phase formation of Bi 2 Se 3 nanoflakes. The morphological features of the individual components and time-evolved hybrid structures were studied using field emission scanning electron microscope. High resolution transmission electron microscopic studies were performed to investigate the actual nature of junction whereas elemental distributions at junction, along with overall stoichiometry of the samples were analyzed using energy dispersive X-ray studies. Temperature dependent current-voltage characteristics and variation of barrier height and ideality factor was studied between 50 and 300 K. An increase in barrier height and decrease in the ideality factor were observed with increasing temperature for the sample. The rectification ratio (I + /I - ) for SiNWs substrate over pristine Si substrate under dark and near-infrared (NIR) irradiation of 890 nm was found to be 3.63 and 10.44, respectively. Furthermore, opto-electrical characterizations were performed for different light power intensities and highest photo responsivity and detectivity were determined to be 934.1 A/W and 2.30 × 10 13 Jones, respectively. Those values are appreciably higher than previous reports for topological insulator based devices. Thus, this work establishes a hybrid system based on topological insulator Bi 2 Se 3 nanoflake and Si nanowire as the newest efficient candidate for advanced optoelectronic materials.

  14. Molecular beam epitaxial growth of Bi2Te3 and Sb2Te3 topological insulators on GaAs (111 substrates: a potential route to fabricate topological insulator p-n junction

    Directory of Open Access Journals (Sweden)

    Zhaoquan Zeng

    2013-07-01

    Full Text Available High quality Bi2Te3 and Sb2Te3 topological insulators films were epitaxially grown on GaAs (111 substrate using solid source molecular beam epitaxy. Their growth and behavior on both vicinal and non-vicinal GaAs (111 substrates were investigated by reflection high-energy electron diffraction, atomic force microscopy, X-ray diffraction, and high resolution transmission electron microscopy. It is found that non-vicinal GaAs (111 substrate is better than a vicinal substrate to provide high quality Bi2Te3 and Sb2Te3 films. Hall and magnetoresistance measurements indicate that p type Sb2Te3 and n type Bi2Te3 topological insulator films can be directly grown on a GaAs (111 substrate, which may pave a way to fabricate topological insulator p-n junction on the same substrate, compatible with the fabrication process of present semiconductor optoelectronic devices.

  15. High efficient photocatalytic activity from nanostructuralized photonic crystal-like p-n coaxial hetero-junction film photocatalyst of Cu3SnS4/TiO2 nanotube arrays

    Science.gov (United States)

    Li, Yan; Liu, Fang-Ting; Chang, Yin; Wang, Jian; Wang, Cheng-Wei

    2017-12-01

    Structuring the materials in the form of photonic crystals is a new strategy for photocatalytic applications. Herein, a new concept of photonic crystal-induced p-n coaxial heterojunction film photocatalyst of Cu3SnS4/TiO2 (CTS/PhC-TNAs) was well-designed and successfully fabricated by combining periodic pulse anodic oxidation and in-situ self-assembling methods Such nanostructured CTS/PhC-TNAs exhibited significantly improved photocatalytic degradation activity under simulated sunlight irradiation with methyl orange (MO) as the target pollutants. Within 120 min, 82% of the MO (10 mg/L) was photodegraded and its kinetic constant per specific surface area reached 0.05332 μmol/m2h, which is 1.6 and 12.8 times more quickly than that of PhC-TNAs and CTS, respectively. Its significantly enhanced photocatalytic activity could be mainly attributed to a joint effect of the unique photonic crystal property of PhC-TNAs and the nanostructured hollow p-n coaxial hetero-junction, which result in an increased efficiency of charge separation and transfer and also an improved spectral response capability. This photonic crystal film photocatalyst has the potential for enhancing the photocatalytic activity via further optimizing the photonic stop band of PhC-TNAs. The study presents a new means to design the kind of photonic crystal structural-induced novel photocatalysts with high photocatalytic activities in pollution treatment.

  16. Functional lateralization of temporoparietal junction - imitation inhibition, visual perspective-taking and theory of mind.

    Science.gov (United States)

    Santiesteban, Idalmis; Banissy, Michael J; Catmur, Caroline; Bird, Geoffrey

    2015-10-01

    Although neuroimaging studies have consistently identified the temporoparietal junction (TPJ) as a key brain region involved in social cognition, the literature is far from consistent with respect to lateralization of function. For example, during theory-of-mind tasks bilateral TPJ activation is found in some studies but only right hemisphere activation in others. Visual perspective-taking and imitation inhibition, which have been argued to recruit the same socio-cognitive processes as theory of mind, are associated with unilateral activation of either left TPJ (perspective taking) or right TPJ (imitation inhibition). The present study investigated the functional lateralization of TPJ involvement in the above three socio-cognitive abilities using transcranial direct current stimulation. Three groups of healthy adults received anodal stimulation over right TPJ, left TPJ or the occipital cortex prior to performing three tasks (imitation inhibition, visual perspective-taking and theory of mind). In contrast to the extant neuroimaging literature, our results suggest bilateral TPJ involvement in imitation inhibition and visual perspective-taking, while no effect of anodal stimulation was observed on theory of mind. The discrepancy between these findings and those obtained using neuroimaging highlight the efficacy of neurostimulation as a complementary methodological tool in cognitive neuroscience. © 2015 Federation of European Neuroscience Societies and John Wiley & Sons Ltd.

  17. Neuromuscular Junction Impairment in Amyotrophic Lateral Sclerosis: Reassessing the Role of Acetylcholinesterase.

    Science.gov (United States)

    Campanari, Maria-Letizia; García-Ayllón, María-Salud; Ciura, Sorana; Sáez-Valero, Javier; Kabashi, Edor

    2016-01-01

    Amyotrophic Lateral Sclerosis (ALS) is a highly debilitating disease caused by progressive degeneration of motorneurons (MNs). Due to the wide variety of genes and mutations identified in ALS, a highly varied etiology could ultimately converge to produce similar clinical symptoms. A major hypothesis in ALS research is the "distal axonopathy" with pathological changes occurring at the neuromuscular junction (NMJ), at very early stages of the disease, prior to MNs degeneration and onset of clinical symptoms. The NMJ is a highly specialized cholinergic synapse, allowing signaling between muscle and nerve necessary for skeletal muscle function. This nerve-muscle contact is characterized by the clustering of the collagen-tailed form of acetylcholinesterase (ColQ-AChE), together with other components of the extracellular matrix (ECM) and specific key molecules in the NMJ formation. Interestingly, in addition to their cholinergic role AChE is thought to play several "non-classical" roles that do not require catalytic function, most prominent among these is the facilitation of neurite growth, NMJ formation and survival. In all this context, abnormalities of AChE content have been found in plasma of ALS patients, in which AChE changes may reflect the neuromuscular disruption. We review these findings and particularly the evidences of changes of AChE at neuromuscular synapse in the pre-symptomatic stages of ALS.

  18. P N Shukla

    Indian Academy of Sciences (India)

    Home; Journals; Journal of Earth System Science. P N Shukla. Articles written in Journal of Earth System Science. Volume 110 Issue 2 June 2001 pp 103-110. High Iridium concentration of alkaline rocks of Deccan and implications to K/T boundary · P N Shukla N Bhandari Anirban Das A D Shukla J S Ray · More Details ...

  19. Study of recombination processes for 'electron-hole' pairs in germanium irradiated by {gamma} rays from {sup 60}Co using the photovoltaic effect in P-N junctions; Etude du processus de recombinaison des paires ''electron-trou'' dans le germanium irradie par les rayons {gamma} du cobalt 60 a l'aide de l'effet photovoltaique dans les jonctions P-N

    Energy Technology Data Exchange (ETDEWEB)

    Zahedi-Mochadam, A A [Commissariat a l' Energie Atomique, Saclay (France). Centre d' Etudes Nucleaires

    1964-10-01

    Using the photo-voltaic effect in p-n junctions, we have studied, during bombardment, the mechanism of the recombination of 'electron-hole' pairs in the presence of structure defects produced in germanium of the N and P types by {gamma} rays from a Co{sup 60} source. At 310 K the level of the recombination centres is situated 0.25 eV above the conduction band and the capture cross-sections of the holes and of the electrons have the respective values of: {sigma}{sub p} = 4 X 10{sup -15} cm{sup 2} and {sigma}{sub n} = 3 X 10{sup -15} cm{sup 2}. The value of {sigma}{sub n} appears to be under-estimated because the number of defects in P-type samples appears to be lower than that in N-type samples. These results lead to the conclusion that the interstitials are responsible for the recombination. At 80 K it has been found that in N-type samples, a shallow level exists at O.05 eV below the conduction band with a capture cross-section for the holes of {sigma}{sub p} {>=} 10{sup -14} cm{sup 2}. We believe that in this case the recombination of charge carriers is controlled by the neighbouring 'defect-interstitial' pairs. In P-type samples at low temperature, the life-time is practically constant during irradiation. This fact is attributed to a spontaneous annealing of defects ol purely electrical origin. In the last part of the work the study of the photo-voltaic effect applied to the problem of gamma radiation dosimetry is considered. It is shown that such dosimeters, based on this principle, make it possible to measure the intensity of gamma rays over a very wide range. (author) [French] En utilisant l'effet photovoltaique dans les jonctions p-n, nous avons etudie au cours du bombardement le mecanisme de recombinaison des paires 'electron-trou' en presence des defauts de structure introduits dans le germanium de type N et de type P par les rayons gamma d'une source de Co{sup 60}. A 310 K, le niveau des centres de recombinaison se trouve a 0,25 eV au-dessous de la bande

  20. Potential profile and photovoltaic effect in nanoscale lateral pn junction observed by Kelvin probe force microscopy

    International Nuclear Information System (INIS)

    Nowak, Roland; Moraru, Daniel; Mizuno, Takeshi; Jablonski, Ryszard; Tabe, Michiharu

    2014-01-01

    Nanoscale pn junctions have been investigated by Kelvin probe force microscopy and several particular features were found. Within the depletion region, a localized noise area is observed, induced by temporal fluctuations of dopant states. Electronic potential landscape is significantly affected by dopants with ground-state energies deeper than in bulk. Finally, the effects of light illumination were studied and it was found that the depletion region shifts its position as a function of light intensity. This is ascribed to charge redistribution within the pn junction as a result of photovoltaic effect and due to the impact of deepened-level dopants. - Highlights: • In pn nano-junctions, temporal potential fluctuations are found in depletion layer. • Fluctuations are due to frequent capture and emission of free carriers by dopants. • Depletion layer position shifts as a function of the intensity of irradiated light. • The depletion layer shifts are due to changes of deep-level dopants' charge states

  1. Focal junctions retard lateral movement and disrupt fluid phase connectivity in the plasma membrane

    DEFF Research Database (Denmark)

    Vind-Kezunovic, D.; Wojewodzka, U.; Gniadecki, R.

    2008-01-01

    ,1'-dioctadecyl-3,3,3',3'-tetramethylindocarbocyanine perchlorate (DiI-C-18:0), which specifically partitions to the liquid-disordered (L-d), non-raft phase, was also enriched in focal junctions and its mobility was slightly retarded. Cross-linking of GM(1) by CTB or raft aggregation by methyl...

  2. Lateral view dissection of the prostato-urethral junction to reduce positive apical margin in laparoscopic radical prostatectomy.

    Science.gov (United States)

    Sasaki, Hiroshi; Miki, Jun; Kimura, Takahiro; Sanuki, Kunitaro; Miki, Kenta; Takahashi, Hiroyuki; Egawa, Shin

    2009-08-01

    To assess the impact of lateral view apical dissection in laparoscopic radical prostatectomy (LRP) on the reduction of positive surgical margin rates and recovery of postoperative continence. One hundred and forty-four consecutive patients underwent LRP from October 2004 to March 2008. Lateral view dissection of the prostato-urethral junction was conducted in 76 of them (Group 2). Standard dissection was used in the remaining patients (Group 1). The effect of this technical modification on the reduction of positive surgical margin rates and postoperative recovery of urinary continence was assessed in the two groups. Overall, the incidence of positive margins decreased from 23 (35.9%) in Group 1 to 16 cases (21.9%) in Group 2 (P = 0.07). Positive margin rates in pT2 decreased from 30.6% to 6.5% (P = 0.006). Apical and dorso-apical margins were reduced from 26.5% to 4.3% (P = 0.009) and from 10.2% to 0% (P Lateral view dissection of the prostato-urethral junction is an easily applicable technical modification. It provides better visualization of apical anatomy substantially contributing to the reduction of positive surgical margin rates, especially at the level of prostatic apex.

  3. P N Kotru

    Indian Academy of Sciences (India)

    Volume 33 Issue 4 August 2010 pp 377-382 Electrical Properties. Dielectric and thermal studies on gel grown strontium tartrate pentahydrate crystals ... High resolution X-ray diffraction studies on unirradiated and irradiated strontium hexaferrite crystals · Balwinder Kaur Monita Bhat F Licci Ravi Kumar K K Bamzai P N Kotru.

  4. MOSFET-BJT hybrid mode of the gated lateral bipolar junction transistor for C-reactive protein detection.

    Science.gov (United States)

    Yuan, Heng; Kwon, Hyurk-Choon; Yeom, Se-Hyuk; Kwon, Dae-Hyuk; Kang, Shin-Won

    2011-10-15

    In this study, we propose a novel biosensor based on a gated lateral bipolar junction transistor (BJT) for biomaterial detection. The gated lateral BJT can function as both a BJT and a metal-oxide-semiconductor field-effect transistor (MOSFET) with both the emitter and source, and the collector and drain, coupled. C-reactive protein (CRP), which is an important disease marker in clinical examinations, can be detected using the proposed device. In the MOSFET-BJT hybrid mode, the sensitivity, selectivity, and reproducibility of the gated lateral BJT for biosensors were evaluated in this study. According to the results, in the MOSFET-BJT hybrid mode, the gated lateral BJT shows good selectivity and reproducibility. Changes in the emitter (source) current of the device for CRP antigen detection were approximately 0.65, 0.72, and 0.80 μA/decade at base currents of -50, -30, and -10 μA, respectively. The proposed device has significant application in the detection of certain biomaterials that require a dilution process using a common biosensor, such as a MOSFET-based biosensor. Copyright © 2011 Elsevier B.V. All rights reserved.

  5. Measuring Neuromuscular Junction Functionality in the SOD1(G93A) Animal Model of Amyotrophic Lateral Sclerosis.

    Science.gov (United States)

    Rizzuto, Emanuele; Pisu, Simona; Musarò, Antonio; Del Prete, Zaccaria

    2015-09-01

    Amyotrophic lateral sclerosis (ALS) is a fatal neurodegenerative disease that leads to motor neuron degeneration, alteration in neuromuscular junctions (NMJs), muscle atrophy, and paralysis. To investigate the NMJ functionality in ALS we tested, in vitro, two innervated muscle types excised from SOD1(G93A) transgenic mice at the end-stage of the disease: the Soleus, a postural muscle almost completely paralyzed at that stage, and the diaphragm, which, on the contrary, is functional until death. To this aim we employed an experimental protocol that combined two types of electrical stimulation: the direct stimulation and the stimulation through the nerve. The technique we applied allowed us to determine the relevance of NMJ functionality separately from muscle contractile properties in SOD1(G93A) animal model. Functional measurements revealed that the muscle contractility of transgenic diaphragms is almost unaltered in comparison to control muscles, while transgenic Soleus muscles were severely compromised. In contrast, when stimulated via the nerve, both transgenic muscle types showed a strong decrease of the contraction force, a slowing down of the kinetic parameters, as well as alterations in the neurotransmission failure parameter. All together, these results confirm a severely impaired functionality in the SOD1(G93A) neuromuscular junctions.

  6. Formation of definite GaN p-n junction by Mg-ion implantation to n--GaN epitaxial layers grown on a high-quality free-standing GaN substrate

    Science.gov (United States)

    Oikawa, Takuya; Saijo, Yusuke; Kato, Shigeki; Mishima, Tomoyoshi; Nakamura, Tohru

    2015-12-01

    P-type conversion of n--GaN by Mg-ion implantation was successfully performed using high quality GaN epitaxial layers grown on free-standing low-dislocation-density GaN substrates. These samples showed low-temperature PL spectra quite similar to those observed from Mg-doped MOVPE-grown p-type GaN, consisting of Mg related donor-acceptor pair (DAP) and acceptor bound exciton (ABE) emission. P-n diodes fabricated by the Mg-ion implantation showed clear rectifying I-V characteristics and UV and blue light emissions were observed at forward biased conditions for the first time.

  7. Cross‐disease comparison of amyotrophic lateral sclerosis and spinal muscular atrophy reveals conservation of selective vulnerability but differential neuromuscular junction pathology

    Science.gov (United States)

    Nijssen, Jik; Frost‐Nylen, Johanna

    2015-01-01

    Neuromuscular junctions are primary pathological targets in the lethal motor neuron diseases spinal muscular atrophy (SMA) and amyotrophic lateral sclerosis (ALS). Synaptic pathology and denervation of target muscle fibers has been reported prior to the appearance of clinical symptoms in mouse models of both diseases, suggesting that neuromuscular junctions are highly vulnerable from the very early stages, and are a key target for therapeutic intervention. Here we examined neuromuscular pathology longitudinally in three clinically relevant muscle groups in mouse models of ALS and SMA in order to assess their relative vulnerabilities. We show for the first time that neuromuscular junctions of the extraocular muscles (responsible for the control of eye movement) were resistant to degeneration in endstage SMA mice, as well as in late symptomatic ALS mice. Tongue muscle neuromuscular junctions were also spared in both animal models. Conversely, neuromuscular junctions of the lumbrical muscles of the hind‐paw were vulnerable in both SMA and ALS, with a loss of neuronal innervation and shrinkage of motor endplates in both diseases. Thus, the pattern of selective vulnerability was conserved across these two models of motor neuron disease. However, the first evidence of neuromuscular pathology occurred at different timepoints of disease progression, with much earlier evidence of presynaptic involvement in ALS, progressing to changes on the postsynaptic side. Conversely, in SMA changes appeared concomitantly at the neuromuscular junction, suggesting that mechanisms of neuromuscular disruption are distinct in these diseases. J. Comp. Neurol. 524:1424–1442, 2016. © 2015 The Authors The Journal of Comparative Neurology Published by Wiley Periodicals, Inc. PMID:26502195

  8. Molecular beam epitaxial growth of Bi{sub 2}Te{sub 3} and Sb{sub 2}Te{sub 3} topological insulators on GaAs (111) substrates: a potential route to fabricate topological insulator p-n junction

    Energy Technology Data Exchange (ETDEWEB)

    Zeng, Zhaoquan; Morgan, Timothy A.; Li, Chen; Hirono, Yusuke; Hu, Xian; Hawkridge, Michael E.; Benamara, Mourad; Salamo, Gregory J. [Arkansas Institute for Nanoscale Material Sciences and Engineering, University of Arkansas, Fayetteville, AR 72701 (United States); Fan, Dongsheng; Yu, Shuiqing [Arkansas Institute for Nanoscale Material Sciences and Engineering, University of Arkansas, Fayetteville, AR 72701 (United States); Department of Electrical Engineering, University of Arkansas, Fayetteville, AR 72701 (United States); Zhao, Yanfei [International Center for Quantum Materials, School of Physics, Peking University, Beijing, 100871 (China); Lee, Joon Sue [The Center for Nanoscale Science and Department of Physics, The Pennsylvania State University, University Park, PA 16802 (United States); Wang, Jian [International Center for Quantum Materials, School of Physics, Peking University, Beijing, 100871 (China); The Center for Nanoscale Science and Department of Physics, The Pennsylvania State University, University Park, PA 16802 (United States); Wang, Zhiming M. [Arkansas Institute for Nanoscale Material Sciences and Engineering, University of Arkansas, Fayetteville, AR 72701 (United States); State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 (China); Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Science, Beijing 100083 (China)

    2013-07-15

    High quality Bi{sub 2}Te{sub 3} and Sb{sub 2}Te{sub 3} topological insulators films were epitaxially grown on GaAs (111) substrate using solid source molecular beam epitaxy. Their growth and behavior on both vicinal and non-vicinal GaAs (111) substrates were investigated by reflection high-energy electron diffraction, atomic force microscopy, X-ray diffraction, and high resolution transmission electron microscopy. It is found that non-vicinal GaAs (111) substrate is better than a vicinal substrate to provide high quality Bi{sub 2}Te{sub 3} and Sb{sub 2}Te{sub 3} films. Hall and magnetoresistance measurements indicate that p type Sb{sub 2}Te{sub 3} and n type Bi{sub 2}Te{sub 3} topological insulator films can be directly grown on a GaAs (111) substrate, which may pave a way to fabricate topological insulator p-n junction on the same substrate, compatible with the fabrication process of present semiconductor optoelectronic devices.

  9. An optically controlled SiC lateral power transistor based on SiC/SiCGe super junction structure

    International Nuclear Information System (INIS)

    Pu Hongbin; Cao Lin; Ren Jie; Chen Zhiming; Nan Yagong

    2010-01-01

    An optically controlled SiC/SiCGe lateral power transistor based on superjunction structure has been proposed, in which n-SiCGe/p-SiC superjunction structure is employed to improve device figure of merit. Performance of the novel optically controlled power transistor was simulated using Silvaco Atlas tools, which has shown that the device has a very good response to the visible light and the near infrared light. The optoelectronic responsivities of the device at 0.5 μm and 0.7 μm are 330 mA/W and 76.2 mA/W at 2 V based voltage, respectively. (semiconductor devices)

  10. An optically controlled SiC lateral power transistor based on SiC/SiCGe super junction structure

    Energy Technology Data Exchange (ETDEWEB)

    Pu Hongbin; Cao Lin; Ren Jie; Chen Zhiming; Nan Yagong, E-mail: puhongbin@xaut.edu.c [Xi' an University of Technology, Xi' an 710048 (China)

    2010-04-15

    An optically controlled SiC/SiCGe lateral power transistor based on superjunction structure has been proposed, in which n-SiCGe/p-SiC superjunction structure is employed to improve device figure of merit. Performance of the novel optically controlled power transistor was simulated using Silvaco Atlas tools, which has shown that the device has a very good response to the visible light and the near infrared light. The optoelectronic responsivities of the device at 0.5 {mu}m and 0.7 {mu}m are 330 mA/W and 76.2 mA/W at 2 V based voltage, respectively. (semiconductor devices)

  11. Macroanatomical Landmarks Featuring Junctions of Major Sulci and Fissures and Scalp Landmarks Based on the International 10–10 System for Analyzing Lateral Cortical Development of Infants

    Directory of Open Access Journals (Sweden)

    Daisuke Tsuzuki

    2017-07-01

    Full Text Available The topographic relationships between the macroanatomical structure of the lateral cortex, including sulci and fissures, and anatomical landmarks on the external surface of the head are known to be consistent. This allows the coregistration of EEG electrodes or functional near-infrared spectroscopy over the scalp with underlying cortical regions. However, limited information is available as to whether the topographic relationships are maintained in rapidly developing infants, whose brains and heads exhibit drastic growth. We used MRIs of infants ranging in age from 3 to 22 months old, and identified 20 macroanatomical landmarks, featuring the junctions of major sulci and fissures, as well as cranial landmarks and virtually determined positions of the international 10-20 and 10-10 systems. A Procrustes analysis revealed developmental trends in changes of shape in both the cortex and head. An analysis of Euclidian distances between selected pairs of cortical landmarks at standard stereotactic coordinates showed anterior shifts of the relative positions of the premotor and parietal cortices with age. Finally, cortical landmark positions and their spatial variability were compared with 10-10 landmark positions. The results indicate that variability in the distribution of each macroanatomical landmark was much smaller than the pitch of the 10-10 landmarks. This study demonstrates that the scalp-based 10-10 system serves as a good frame of reference in infants not only for assessing the development of the macroanatomy of the lateral cortical structure, but also for functional studies of cortical development using transcranial modalities such as EEG and fNIRS.

  12. Systematic optimization of quantum junction colloidal quantum dot solar cells

    KAUST Repository

    Liu, Huan; Zhitomirsky, David; Hoogland, Sjoerd; Tang, Jiang; Kramer, Illan J.; Ning, Zhijun; Sargent, Edward H.

    2012-01-01

    The recently reported quantum junction architecture represents a promising approach to building a rectifying photovoltaic device that employs colloidal quantum dot layers on each side of the p-n junction. Here, we report an optimized quantum

  13. A Monolithic Interconnected module with a tunnel Junction for Enhanced Electrical and Optical Performance

    Energy Technology Data Exchange (ETDEWEB)

    Murray, Christopher Sean; Wilt, David Morgan

    1999-06-30

    An improved thermophotovoltaic (TPV) n/p/n device is provided. Monolithic Interconnected Modules (MIMs), semiconductor devices converting infrared radiation to electricity, have been developed with improved electrical and optical performance. The structure is an n-type emitter on a p-type base with an n-type lateral conduction layer. The incorporation of a tunnel junction and the reduction in the amount of p-type material used results in negligible parasitic absorption, decreased series resistance, increased voltage and increased active area. The novel use of a tunnel junction results in the potential for a TPV device with efficiency greater than 24%.

  14. Visualizing the photovoltaic behavior of a type-II p-n heterojunction superstructure

    Energy Technology Data Exchange (ETDEWEB)

    Xing, Juanjuan, E-mail: xingjuanjuan@mail.sic.ac.cn [State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road, Shanghai 200050 (China); Electron Microscopy Group, Surface Physics and Structure Unit, National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Takeguchi, Masaki [Electron Microscopy Group, Surface Physics and Structure Unit, National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Hashimoto, Ayako [Electron Microscopy Group, Surface Physics and Structure Unit, National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Global Research Center for Environment and Energy Based on Nanomaterials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Cao, Junyu; Ye, Jinhua [International Center for Materials Nanoarchitectonics (WPI-MANA), 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan)

    2014-04-21

    Photovoltaic behavior of a CaFe{sub 2}O{sub 4}/ZnFe{sub 2}O{sub 4} p-n multi-junction was investigated with electron holography combined with an in situ light irradiation system. Potential profiles of the samples with and without light irradiation were extracted to measure the open circuit photovoltage generated either by the whole heterojunction superstructure or from each p-n junction. Investigation on the variation in the energy band configuration under light irradiation revealed the mechanism involved in the photoelectric effect, with respect to the properties of the heterojunction and its periodic quantum structure.

  15. Atomic-scaled characterization of graphene PN junctions

    Science.gov (United States)

    Zhou, Xiaodong; Wang, Dennis; Dadgar, Ali; Agnihotri, Pratik; Lee, Ji Ung; Reuter, Mark C.; Ross, Frances M.; Pasupathy, Abhay N.

    Graphene p-n junctions are essential devices for studying relativistic Klein tunneling and the Veselago lensing effect in graphene. We have successfully fabricated graphene p-n junctions using both lithographically pre-patterned substrates and the stacking of vertical heterostructures. We then use our 4-probe STM system to characterize the junctions. The ability to carry out scanning electron microscopy (SEM) in our STM instrument is essential for us to locate and measure the junction interface. We obtain both the topography and dI/dV spectra at the junction area, from which we track the shift of the graphene chemical potential with position across the junction interface. This allows us to directly measure the spatial width and roughness of the junction and its potential barrier height. We will compare the junction properties of devices fabricated by the aforementioned two methods and discuss their effects on the performance as a Veselago lens.

  16. Tight junctions and human diseases.

    Science.gov (United States)

    Sawada, Norimasa; Murata, Masaki; Kikuchi, Keisuke; Osanai, Makoto; Tobioka, Hirotoshi; Kojima, Takashi; Chiba, Hideki

    2003-09-01

    Tight junctions are intercellular junctions adjacent to the apical end of the lateral membrane surface. They have two functions, the barrier (or gate) function and the fence function. The barrier function of tight junctions regulates the passage of ions, water, and various macromolecules, even of cancer cells, through paracellular spaces. The barrier function is thus relevant to edema, jaundice, diarrhea, and blood-borne metastasis. On the other hand, the fence function maintains cell polarity. In other words, tight junctions work as a fence to prevent intermixing of molecules in the apical membrane with those in the lateral membrane. This function is deeply involved in cancer cell biology, in terms of loss of cell polarity. Of the proteins comprising tight junctions, integral membrane proteins occludin, claudins, and JAMs have been recently discovered. Of these molecules, claudins are exclusively responsible for the formation of tight-junction strands and are connected with the actin cytoskeleton mediated by ZO-1. Thus, both functions of tight junctions are dependent on the integrity of the actin cytoskeleton as well as ATP. Mutations in the claudin14 and the claudin16 genes result in hereditary deafness and hereditary hypomagnesemia, respectively. Some pathogenic bacteria and viruses target and affect the tight-junction function, leading to diseases. In this review, the relationship between tight junctions and human diseases is summarized.

  17. (p,n) reaction at intermediate energy

    International Nuclear Information System (INIS)

    Goodman, C.D.

    1979-01-01

    The use of the (p,n) reaction in exploring effective interactions is reviewed. Some recent data on self-conjugate nuclei taken at the Indiana University Cyclotron Facility (IUCF) are presented, and the differences between low- and high-energy data are emphasized. Experimental problems and techniques used are briefly described. It is concluded that forward-angle (p,n) spectra at energies greater than 100 MeV are dominated by Gamow-Teller (GT) transitions, while Fermi transitions (IAS transitions) dominate near 45 MeV. Prominent GT transitions are expected from a pion-exchange interaction, and it is expected that OPEP is the dominant component of the interaction in the energy range of 100 to 200 MeV. 27 figures, 2 tables

  18. Photovoltaic characteristics of diffused P/+N bulk GaAs solar cells

    Science.gov (United States)

    Borrego, J. M.; Keeney, R. P.; Bhat, I. B.; Bhat, K. N.; Sundaram, L. G.; Ghandhi, S. K.

    1982-01-01

    The photovoltaic characteristics of P(+)N junction solar cells fabricated on bulk GaAs by an open tube diffusion technique are described in this paper.Spectral response measurements were analyzed in detail and compared to a computer simulation in order to determine important material parameters. It is projected that proper optimization of the cell parameters can increase the efficiency of the cells from 12.2 percent to close to 20 percent.

  19. Gap Junctions

    Science.gov (United States)

    Nielsen, Morten Schak; Axelsen, Lene Nygaard; Sorgen, Paul L.; Verma, Vandana; Delmar, Mario; Holstein-Rathlou, Niels-Henrik

    2013-01-01

    Gap junctions are essential to the function of multicellular animals, which require a high degree of coordination between cells. In vertebrates, gap junctions comprise connexins and currently 21 connexins are known in humans. The functions of gap junctions are highly diverse and include exchange of metabolites and electrical signals between cells, as well as functions, which are apparently unrelated to intercellular communication. Given the diversity of gap junction physiology, regulation of gap junction activity is complex. The structure of the various connexins is known to some extent; and structural rearrangements and intramolecular interactions are important for regulation of channel function. Intercellular coupling is further regulated by the number and activity of channels present in gap junctional plaques. The number of connexins in cell-cell channels is regulated by controlling transcription, translation, trafficking, and degradation; and all of these processes are under strict control. Once in the membrane, channel activity is determined by the conductive properties of the connexin involved, which can be regulated by voltage and chemical gating, as well as a large number of posttranslational modifications. The aim of the present article is to review our current knowledge on the structure, regulation, function, and pharmacology of gap junctions. This will be supported by examples of how different connexins and their regulation act in concert to achieve appropriate physiological control, and how disturbances of connexin function can lead to disease. © 2012 American Physiological Society. Compr Physiol 2:1981-2035, 2012. PMID:23723031

  20. The ZnO p-n homojunctions modulated by ZnMgO barriers

    International Nuclear Information System (INIS)

    Yang, Jing-Jing; Fang, Qing-Qing; Wang, Dan-Dan; Du, Wen-Han

    2015-01-01

    In this paper, we fabricated the ultrathin ZnO p-n homojunctions, which modulated by ZnMgO asymmetrical double barriers (ADB). The ADB p-n homojunctions displays step-like curve in the absorption spectrums, this is the first time that quantum confinement effect has been observed in the absorption spectrums at room temperature (RT). The Hall-effect data confirm there is 2-dimensional electron gas in the interface of the ZnMgO ADB p-n junctions. The quantum confinement effect enhances the hall-mobility μ to 10 3 cm 2 V −1 s −1 based on the polarity of the films. There was no rectification property in the ZnO homojunctions with thickness of 250nm, however, when the ADB was added in the n-type layer of the homojunctions, it displays a typical Zener diode rectification property in the I-V curve

  1. Titanium-dioxide nanotube p-n homojunction diode

    Science.gov (United States)

    Alivov, Yahya; Ding, Yuchen; Singh, Vivek; Nagpal, Prashant

    2014-12-01

    Application of semiconductors in functional optoelectronic devices requires precise control over their doping and formation of junction between p- and n-doped semiconductors. While doped thin films have led to several semiconductor devices, need for high-surface area nanostructured devices for photovoltaic, photoelectrochemical, and photocatalytic applications has been hindered by lack of desired doping in nanostructures. Here, we show titanium-dioxide (TiO2) nanotubes doped with nitrogen (N) and niobium (Nb) as acceptors and donors, respectively, and formation of TiO2 nanotubes p-n homojunction. This TiO2:N/TiO2:Nb homojunction showed distinct diode-like behaviour with rectification ratio of 1115 at ±5 V and exhibited good photoresponse for ultraviolet light (λ = 365 nm) with sensitivity of 0.19 A/W at reverse bias of -5 V. These results can have important implications for development of nanostructured metal-oxide solar-cells, photodiodes, LED's, photocatalysts, and photoelectrochemical devices.

  2. Titanium-dioxide nanotube p-n homojunction diode

    Energy Technology Data Exchange (ETDEWEB)

    Alivov, Yahya, E-mail: y.alivov@colorado.edu, E-mail: pnagpal@colorado.edu; Ding, Yuchen; Singh, Vivek [Department of Chemical and Biological Engineering, University of Colorado Boulder, 3415 Colorado Avenue, Boulder, Colorado 80303 (United States); Nagpal, Prashant, E-mail: y.alivov@colorado.edu, E-mail: pnagpal@colorado.edu [Department of Chemical and Biological Engineering, University of Colorado Boulder, 3415 Colorado Avenue, Boulder, Colorado 80303 (United States); Materials Science and Engineering, University of Colorado Boulder, 3415 Colorado Avenue, Boulder, Colorado 80303 (United States); Renewable and Sustainable Energy Institute, University of Colorado Boulder, 2445 Kittredge Loop, Boulder, Colorado 80309 (United States)

    2014-12-29

    Application of semiconductors in functional optoelectronic devices requires precise control over their doping and formation of junction between p- and n-doped semiconductors. While doped thin films have led to several semiconductor devices, need for high-surface area nanostructured devices for photovoltaic, photoelectrochemical, and photocatalytic applications has been hindered by lack of desired doping in nanostructures. Here, we show titanium-dioxide (TiO{sub 2}) nanotubes doped with nitrogen (N) and niobium (Nb) as acceptors and donors, respectively, and formation of TiO{sub 2} nanotubes p-n homojunction. This TiO{sub 2}:N/TiO{sub 2}:Nb homojunction showed distinct diode-like behaviour with rectification ratio of 1115 at ±5 V and exhibited good photoresponse for ultraviolet light (λ = 365 nm) with sensitivity of 0.19 A/W at reverse bias of −5 V. These results can have important implications for development of nanostructured metal-oxide solar-cells, photodiodes, LED's, photocatalysts, and photoelectrochemical devices.

  3. Two-dimensional dopant profiling for shallow junctions by TEM and AFM

    International Nuclear Information System (INIS)

    Yoo, K.

    2000-01-01

    The present work concerns the development of the Etch/TEM and Etch/AFM methods to obtain quantitative 2-D dopant profiles for the ultra shallow p-n junctions of the next generation of metal-oxide-semiconductor field effect transistors (MOSFETs). For these methods, thin foil (TEM) or bulk (AFM) cross-sectional specimens were etched using a dopant selective chemical so that local areas of the dopant implanted source/drain (S/D) regions were etched to different depths. The surface topography of the S/D regions was determined from the thickness fringes for the TEM method and by the direct measurement for the AFM method. The local etched depths were converted to etch rates, and these were then converted to corresponding 1-D and 2-D dopant profiles by the experimentally independent etch rate calibration curves. Shallow junction MOSFET samples were designed and fabricated with junction depths 60nm (n + /p), 80nm (n + /p) and 120nm (p + /n) using 0.25μm process technology. A new method using SOG (Spin-on-Glass) contributed to the high quality XTEM thin foil specimens. Controlled stirring of the etchant increased the dopant concentration selectivity and etching consistency. Computer modelling simulated the isotropic etching behaviours, which can introduce the significant error in dopant profiling for shallow and abrupt junction samples. Comprehensive quantitative results enabled the optimum etching time to be determined for the first time. Etch/TEM method gave 1-D dopant profiles that showed good agreement with 1-D Spreading Resistance Probe (SRP) dopant profiles for determining junction depths. 2-D dopant profiles gave L eff , i.e. the shortest lateral distance between the S/D junctions, of major importance for MOSFET performance. Values for L eff of 161, 159 and 123nm were determined from 60, 80 and 120nm junction depth samples respectively, compared with the 215nm MOSFET gate length. The resolution and accuracy of the Etch/TEM method are estimated as 2 and 10nm

  4. Systematics in p-n interaction vs deformation

    International Nuclear Information System (INIS)

    Singh, M.; Singh, Yuvraj; Kumar, Rajesh; Vrshney, A.K.; Gupta, K.K.

    2017-01-01

    The correlation of integrated valance p-n interaction in the onset of collectivity and deformation has been described phenomenologically in terms of N p N n scheme. L. Esser et al. presented the graphs between N p N n and deformation β and γ for some heavy nuclei

  5. Optimization of Silicon parameters as a betavoltaic battery: Comparison of Si p-n and Ni/Si Schottky barrier

    International Nuclear Information System (INIS)

    Rahmani, Faezeh; Khosravinia, Hossein

    2016-01-01

    Theoretical studies on the optimization of Silicon (Si) parameters as the base of betavoltaic battery have been presented using Monte Carlo simulations and the state equations in semiconductor to obtain maximum power. Si with active area of 1 cm 2 has been considered in p-n junction and Schottky barrier structure to collect the radiation induced-charge from 10 mCi cm −2 of Nickle-63 ( 63 Ni) Source. The results show that the betavoltaic conversion efficiency in the Si p-n structure is about 2.7 times higher than that in the Ni/Si Schottky barrier structure. - Highlights: • Silicon parameters were studied in betavoltaic batteries. • Studied betavoltaic batteries include p-n and Schottky barrier structures. • The p-n structure has higher conversion efficiency.

  6. The effect of magnetic field on chiral transmission in p-n-p graphene junctions

    Science.gov (United States)

    Li, Yuan; Wan, Qi; Peng, Yingzi; Wang, Guanqing; Qian, Zhenghong; Zhou, Guanghui; Jalil, Mansoor B. A.

    2015-12-01

    We investigate Klein tunneling in graphene heterojunctions under the influence of a perpendicular magnetic field via the non-equilibrium Green’s function method. We find that the angular dependence of electron transmission is deflected sideways, resulting in the suppression of normally incident electrons and overall decrease in conductance. The off-normal symmetry axis of the transmission profile was analytically derived. Overall tunneling conductance decreases to almost zero regardless of the potential barrier height when the magnetic field (B-field) exceeds a critical value, thus achieving effective confinement of Dirac fermions. The critical field occurs when the width of the magnetic field region matches the diameter of the cyclotron orbit. The potential barrier also induces distinct Fabry-Pérot fringe patterns, with a “constriction region” of low transmission when is close to the Fermi energy. Application of B-field deflects the Fabry-Pérot interference pattern to an off-normal angle. Thus, the conductance of the graphene heterojunctions can be sharply modulated by adjusting the B-field strength and the potential barrier height relative to the Fermi energy.

  7. The effect of magnetic field on chiral transmission in p-n-p graphene junctions.

    Science.gov (United States)

    Li, Yuan; Wan, Qi; Peng, Yingzi; Wang, Guanqing; Qian, Zhenghong; Zhou, Guanghui; Jalil, Mansoor B A

    2015-12-18

    We investigate Klein tunneling in graphene heterojunctions under the influence of a perpendicular magnetic field via the non-equilibrium Green's function method. We find that the angular dependence of electron transmission is deflected sideways, resulting in the suppression of normally incident electrons and overall decrease in conductance. The off-normal symmetry axis of the transmission profile was analytically derived. Overall tunneling conductance decreases to almost zero regardless of the potential barrier height V0 when the magnetic field (B-field) exceeds a critical value, thus achieving effective confinement of Dirac fermions. The critical field occurs when the width of the magnetic field region matches the diameter of the cyclotron orbit. The potential barrier also induces distinct Fabry-Pérot fringe patterns, with a "constriction region" of low transmission when V0 is close to the Fermi energy. Application of B-field deflects the Fabry-Pérot interference pattern to an off-normal angle. Thus, the conductance of the graphene heterojunctions can be sharply modulated by adjusting the B-field strength and the potential barrier height relative to the Fermi energy.

  8. Spin dependent surface recombination in silicon p-n junctions: the effect of irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Kaplan, D [Laboratoire Central de Recherches, 91 - Corbeville par Orsay (France); Pepper, M [Cambridge Univ. (UK). Cavendish Lab.

    1980-06-01

    The results are presented of an investigation of spin dependent recombination in (100) oriented, gate controlled Si diodes irradiated by 30 keV electrons. After irradiation, recombination at the Si-SiO/sub 2/ interface is increased, and saturation of the spin resonance increases the diode forward current by 5 parts in 10/sup 4/. The results cannot be described by a conventional Shockley-Read recombination model. An alternative picture is proposed involving recombination between trapped electrons and trapped holes.

  9. Organic p-n heterostructures and superlattices

    Energy Technology Data Exchange (ETDEWEB)

    Kowarik, Stefan [Lawrence Berkeley National Laboratory, Berkeley, CA (United States); Hinderhofer, Alexander; Gerlach, Alexander; Schreiber, Frank [Institut fuer Angewandte Physik, Tuebingen (Germany); Osso, Oriol [MATGAS 2000 A.I.E., Esfera UAB, Barcelona (Spain); Wang, Cheng; Hexemer, Alexander [Advanced Light Source, Berkeley, CA (United States)

    2009-07-01

    For many applications of organic semiconductors two components such as e.g. n and p-type layers are required, and the morphology of such heterostructures is crucial for their performance. Pentacene (PEN) is one of the most promising p-type molecular semiconductors and recently perfluoro-pentacene (PFP) has been identified as a good electron conducting material for complementary circuits with PEN. We use soft and hard X-ray reflectivity measurements, scanning transmission X-ray microscopy (STXM) and atomic force microscopy for structural investigations of PFP-PEN heterostructures. The chemical contrast between PEN and PFP in STXM allows us to determine the lateral length scales of p and n domains in a bilayer. For a superlattice of alternating PFP and PEN layers grown by organic molecular beam deposition, X-ray reflectivity measurements demonstrate good structural order. We find a superlattice reflection that varies strongly when tuning the X-ray energy around the fluorine edge, demonstrating that there are indeed alternating PFP and PEN layers.

  10. Liquid phase epitaxy of abrupt junctions in InAs and studies of injection radiative tunneling processes

    International Nuclear Information System (INIS)

    Bull, D.J.

    1977-01-01

    The p-n junction in a InAs crystal, by liquid phase epitaxy is obtained. The processes of injection and tunneling radiative recombination by emitted radiation from active region of p-n junction for low injection current are studied. (M.C.K.) [pt

  11. Narrow-band light emission from a single carbon nanotube p-n diode

    Science.gov (United States)

    Kinoshita, Megumi; Mueller, Thomas; Steiner, Mathias; Perebeinos, Vasili; Bol, Ageeth; Farmer, Damon; Avouris, Phaedon

    2010-03-01

    We present the first observation of electroluminescence from electrostatically-generated carbon nanotube (CNT) p-n junctions[1]. While CNT optoelectronics has made much progress in recent years, observations of emission from electrically excited CNT devices have been limited to the high-bias regime and with low efficiency. Furthermore, the resulting broad linewidths are broad, making it difficult to investigate electronic levels and carrier dynamics. We find that p-n junctions allow for better carrier control at lower power inputs, resulting in emission with near-zero threshold, low self-heating and efficiency two to three orders of magnitude greater compared to previous device configurations. This yields higher signal-to-noise ratio and narrower linewidths (down to ˜35 meV) that allows us to identify localized excitonic transitions that have previously been observed only in photoluminescent studies. [1] T. Mueller, M. Kinoshita, M. Steiner, V. Perebeinos, A. Bol, D. Farmer, and Ph. Avouris, Nature Nanotech., web publication, November 15 2009.

  12. A three-dimensional breakdown model of SOI lateral power transistors with a circular layout

    International Nuclear Information System (INIS)

    Guo Yufeng; Wang Zhigong; Sheu Gene

    2009-01-01

    This paper presents an analytical three-dimensional breakdown model of SOI lateral power devices with a circular layout. The Poisson equation is solved in cylindrical coordinates to obtain the radial surface potential and electric field distributions for both fully- and partially-depleted drift regions. The breakdown voltages for N + N and P + N junctions are derived and employed to investigate the impact of cathode region curvature. A modified RESURF criterion is proposed to provide a design guideline for optimizing the breakdown voltage and doping concentration in the drift region in three dimensional space. The analytical results agree well with MEDICI simulation results and experimental data from earlier publications. (semiconductor devices)

  13. Chemically fixed p-n heterojunctions for polymer electronics by means of covalent B-F bond formation

    Science.gov (United States)

    Hoven, Corey V.; Wang, Huiping; Elbing, Mark; Garner, Logan; Winkelhaus, Daniel; Bazan, Guillermo C.

    2010-03-01

    Widely used solid-state devices fabricated with inorganic semiconductors, including light-emitting diodes and solar cells, derive much of their function from the p-n junction. Such junctions lead to diode characteristics and are attained when p-doped and n-doped materials come into contact with each other. Achieving bilayer p-n junctions with semiconducting polymers has been hindered by difficulties in the deposition of thin films with independent p-doped and n-doped layers. Here we report on how to achieve permanently fixed organic p-n heterojunctions by using a cationic conjugated polyelectrolyte with fluoride counteranions and an underlayer composed of a neutral conjugated polymer bearing anion-trapping functional groups. Application of a bias leads to charge injection and fluoride migration into the neutral layer, where irreversible covalent bond formation takes place. After the initial charging and doping, one obtains devices with no delay in the turn on of light-emitting electrochemical behaviour and excellent current rectification. Such devices highlight how mobile ions in organic media can open opportunities to realize device structures in ways that do not have analogies in the world of silicon and promise new opportunities for integrating organic materials within technologies now dominated by inorganic semiconductors.

  14. A fast and zero-biased photodetector based on GaTe-InSe vertical 2D p-n heterojunction

    Science.gov (United States)

    Feng, W.; Jin, Z.; Yuan, J.; Zhang, J.; Jia, S.; Dong, L.; Yoon, J.; Zhou, L.; Vajtai, R.; Tour, J. M.; Ajayan, P. M.; Hu, P.; Lou, J.

    2018-04-01

    p-n junctions serve as the building blocks for fundamental semiconductor devices, such as solar cells, light-emitting diodes (LEDs) and photodetectors. With recent studies unveiling the excellent optoelectronic properties of two-dimensional (2D) semiconductors, they are considered to be superb candidates for high performance p-n junctions. Here, we fabricate a vertical GaTe-InSe van der Waals (vdWs) p-n heterojunction by a PDMS-assisted transfer technique without etching. The fabricated p-n heterojunction shows gate-tunable current-rectifying behavior with a rectification factor reaching 1000. In addition, it features fast photodetection under zero bias as well as a high power conversion efficiency (PCE). Under 405 nm laser excitation, the zero-biased photodetector shows a high responsivity of 13.8 mA W-1 as well as a high external quantum efficiency (EQE) of 4.2%. Long-term stability is also observed and a response time of 20 µs is achieved due to stable and fast carrier transit through the built-in electric field in the depletion region. Fast and efficient charge separation in the vertical 2D p-n junction paves the way for developing 2D photodetectors with zero dark current, high speed and low power consumption.

  15. Method for manufacturing nuclear radiation detector with deep diffused junction

    International Nuclear Information System (INIS)

    Hall, R.N.

    1977-01-01

    Germanium radiation detectors are manufactured by diffusing lithium into high purity p-type germanium. The diffusion is most readily accomplished from a lithium-lead-bismuth alloy at approximately 430 0 C and is monitored by a quartz half cell containing a standard composition of this alloy. Detectors having n-type cores may be constructed by converting high purity p-type germanium to n-type by a lithium diffusion and subsequently diffusing some of the lithium back out through the surface to create a deep p-n junction. Production of coaxial germanium detectors comprising deep p-n junctions by the lithium diffusion process is described

  16. 19th Scientific Readings Devoted to P.N. Chirvinskiy

    Directory of Open Access Journals (Sweden)

    I. Ya. Ilaltdinov

    2017-03-01

    Full Text Available Scientific conference devoted to P.N. Chirvinskiy was held in the Perm State University (January 2017. The problems of mineralogy, petrology, lithology, metallogeny and geochemistry were discussed.

  17. Studies of frequency dependent C-V characteristics of neutron irradiated p+-n silicon detectors

    International Nuclear Information System (INIS)

    Li, Zheng; Kraner, H.W.

    1990-10-01

    Frequency-dependent capacitance-voltage fluence (C-V) characteristics of neutron irradiated high resistivity silicon p + -n detectors have been observed up to a fluence of 8.0 x 10 12 n/cm 2 . It has been found that frequency dependence of the deviation of the C-V characteristic (from its normal V -1/2 dependence), is strongly dependent on the ratio of the defect density and the effective doping density N t /N' d . As the defect density approaches the effective dopant density, or N t /N' d → 1, the junction capacitance eventually assumes the value of the detector geometry capacitance at high frequencies (f ≤ 10 5 Hz), independent of voltage. A two-trap-level model using the concept of quasi-fermi levels has been developed, which predicts both the effects of C-V frequency dependence and dopant compensation observed in this study

  18. Electrical characterization of proton irradiated p+-n-n+ Si diode

    International Nuclear Information System (INIS)

    Kim, J.H.; Lee, D.U.; Kim, E.K.; Bae, Y.H.

    2006-01-01

    Electrical characterization of p + -n-n + Si power electric diodes was done with proton irradiation. The kinetic energies of irradiated protons were 2.32, 2.55 and 2.97MeV, and for each energy condition, doses of 1x10 11 , 1x10 12 and 1x10 13 cm -2 were given. By modulating the kinetic energy, the proton penetration depth into Si crystal could be adjusted to the range of 55-90μm, and then controlled to the special depth regions such as junction region, depletion region and neutral region over the depletion layer in the p + -n-n + diode structure. Defects produced by the proton irradiation affected to electrical property of the Si diode because of their carrier trapping, and then the reverse recovery time was improved from 240 to 50ns. It appeared that the defect states with activation energies of 0.47 and 0.54eV may be responsible for the decrease of the minority carrier lifetime in the proton-irradiated diode with 2.97MeV energy and 1x10 13 cm -2 doses

  19. Molecular electronic junction transport

    DEFF Research Database (Denmark)

    Solomon, Gemma C.; Herrmann, Carmen; Ratner, Mark

    2012-01-01

    Whenasinglemolecule,oracollectionofmolecules,isplacedbetween two electrodes and voltage is applied, one has a molecular transport junction. We discuss such junctions, their properties, their description, and some of their applications. The discussion is qualitative rather than quantitative, and f...

  20. Atomic-Monolayer Two-Dimensional Lateral Quasi-Heterojunction Bipolar Transistors with Resonant Tunneling Phenomenon

    KAUST Repository

    Lin, Che-Yu; Zhu, Xiaodan; Tsai, Shin-Hung; Tsai, Shiao-Po; Lei, Sidong; Li, Ming-Yang; Shi, Yumeng; Li, Lain-Jong; Huang, Shyh-Jer; Wu, Wen-Fa; Yeh, Wen-Kuan; Su, Yan-Kuin; Wang, Kang L.; Lan, Yann-Wen

    2017-01-01

    High-frequency operation with ultra-thin, lightweight and extremely flexible semiconducting electronics are highly desirable for the development of mobile devices, wearable electronic systems and defense technologies. In this work, the first experimental observation of quasi-heterojunction bipolar transistors utilizing a monolayer of the lateral WSe2-MoS2 junctions as the conducting p-n channel is demonstrated. Both lateral n-p-n and p-n-p heterojunction bipolar transistors are fabricated to exhibit the output characteristics and current gain. A maximum common-emitter current gain of around 3 is obtained in our prototype two-dimensional quasi-heterojunction bipolar transistors. Interestingly, we also observe the negative differential resistance in the electrical characteristics. A potential mechanism is that the negative differential resistance is induced by resonant tunneling phenomenon due to the formation of quantum well under applying high bias voltages. Our results open the door to two-dimensional materials for high-frequency, high-speed, high-density and flexible electronics.

  1. Atomic-Monolayer Two-Dimensional Lateral Quasi-Heterojunction Bipolar Transistors with Resonant Tunneling Phenomenon

    KAUST Repository

    Lin, Che-Yu

    2017-10-04

    High-frequency operation with ultra-thin, lightweight and extremely flexible semiconducting electronics are highly desirable for the development of mobile devices, wearable electronic systems and defense technologies. In this work, the first experimental observation of quasi-heterojunction bipolar transistors utilizing a monolayer of the lateral WSe2-MoS2 junctions as the conducting p-n channel is demonstrated. Both lateral n-p-n and p-n-p heterojunction bipolar transistors are fabricated to exhibit the output characteristics and current gain. A maximum common-emitter current gain of around 3 is obtained in our prototype two-dimensional quasi-heterojunction bipolar transistors. Interestingly, we also observe the negative differential resistance in the electrical characteristics. A potential mechanism is that the negative differential resistance is induced by resonant tunneling phenomenon due to the formation of quantum well under applying high bias voltages. Our results open the door to two-dimensional materials for high-frequency, high-speed, high-density and flexible electronics.

  2. Atomic-Monolayer Two-Dimensional Lateral Quasi-Heterojunction Bipolar Transistors with Resonant Tunneling Phenomenon.

    Science.gov (United States)

    Lin, Che-Yu; Zhu, Xiaodan; Tsai, Shin-Hung; Tsai, Shiao-Po; Lei, Sidong; Shi, Yumeng; Li, Lain-Jong; Huang, Shyh-Jer; Wu, Wen-Fa; Yeh, Wen-Kuan; Su, Yan-Kuin; Wang, Kang L; Lan, Yann-Wen

    2017-11-28

    High-frequency operation with ultrathin, lightweight, and extremely flexible semiconducting electronics is highly desirable for the development of mobile devices, wearable electronic systems, and defense technologies. In this work, the experimental observation of quasi-heterojunction bipolar transistors utilizing a monolayer of the lateral WSe 2 -MoS 2 junctions as the conducting p-n channel is demonstrated. Both lateral n-p-n and p-n-p heterojunction bipolar transistors are fabricated to exhibit the output characteristics and current gain. A maximum common-emitter current gain of around 3 is obtained in our prototype two-dimensional quasi-heterojunction bipolar transistors. Interestingly, we also observe the negative differential resistance in the electrical characteristics. A potential mechanism is that the negative differential resistance is induced by resonant tunneling phenomenon due to the formation of quantum well under applying high bias voltages. Our results open the door to two-dimensional materials for high-frequency, high-speed, high-density, and flexible electronics.

  3. A single-gradient junction technique to replace multiple-junction shifts for craniospinal irradiation treatment

    International Nuclear Information System (INIS)

    Hadley, Austin; Ding, George X.

    2014-01-01

    Craniospinal irradiation (CSI) requires abutting fields at the cervical spine. Junction shifts are conventionally used to prevent setup error–induced overdosage/underdosage from occurring at the same location. This study compared the dosimetric differences at the cranial-spinal junction between a single-gradient junction technique and conventional multiple-junction shifts and evaluated the effect of setup errors on the dose distributions between both techniques for a treatment course and single fraction. Conventionally, 2 lateral brain fields and a posterior spine field(s) are used for CSI with weekly 1-cm junction shifts. We retrospectively replanned 4 CSI patients using a single-gradient junction between the lateral brain fields and the posterior spine field. The fields were extended to allow a minimum 3-cm field overlap. The dose gradient at the junction was achieved using dose painting and intensity-modulated radiation therapy planning. The effect of positioning setup errors on the dose distributions for both techniques was simulated by applying shifts of ± 3 and 5 mm. The resulting cervical spine doses across the field junction for both techniques were calculated and compared. Dose profiles were obtained for both a single fraction and entire treatment course to include the effects of the conventional weekly junction shifts. Compared with the conventional technique, the gradient-dose technique resulted in higher dose uniformity and conformity to the target volumes, lower organ at risk (OAR) mean and maximum doses, and diminished hot spots from systematic positioning errors over the course of treatment. Single-fraction hot and cold spots were improved for the gradient-dose technique. The single-gradient junction technique provides improved conformity, dose uniformity, diminished hot spots, lower OAR mean and maximum dose, and one plan for the entire treatment course, which reduces the potential human error associated with conventional 4-shifted plans

  4. Junction and circuit fabrication

    International Nuclear Information System (INIS)

    Jackel, L.D.

    1980-01-01

    Great strides have been made in Josephson junction fabrication in the four years since the first IC SQUID meeting. Advances in lithography have allowed the production of devices with planar dimensions as small as a few hundred angstroms. Improved technology has provided ultra-high sensitivity SQUIDS, high-efficiency low-noise mixers, and complex integrated circuits. This review highlights some of the new fabrication procedures. The review consists of three parts. Part 1 is a short summary of the requirements on junctions for various applications. Part 2 reviews intergrated circuit fabrication, including tunnel junction logic circuits made at IBM and Bell Labs, and microbridge radiation sources made at SUNY at Stony Brook. Part 3 describes new junction fabrication techniques, the major emphasis of this review. This part includes a discussion of small oxide-barrier tunnel junctions, semiconductor barrier junctions, and microbridge junctions. Part 3 concludes by considering very fine lithography and limitations to miniaturization. (orig.)

  5. [ital N][sub [ital p]N[ital n

    Energy Technology Data Exchange (ETDEWEB)

    Saha, M.; Sen, S. (Saha Institute of Nuclear Physics, Calcutta 700 064 (India))

    1993-02-01

    It is shown that the well known phenomenon of the saturation in the [ital B]([ital E]2;0[sub 1][sup +][r arrow]2[sub 1][sup +]), as well as the [ital E][sub 21][sup +] values near midshell in the even rare-earth and actinide nuclei, can be reproduced in the [ital N][sub [ital p]N[ital n

  6. Enhancement of the Si p-n diode NIR photoresponse by embedding β-FeSi2 nanocrystallites.

    Science.gov (United States)

    Shevlyagin, A V; Goroshko, D L; Chusovitin, E A; Galkin, K N; Galkin, N G; Gutakovskii, A K

    2015-10-05

    By using solid phase epitaxy of thin Fe films and molecular beam epitaxy of Si, a p(+)-Si/p-Si/β-FeSi2 nanocrystallites/n-Si(111) diode structure was fabricated. Transmission electron microscopy data confirmed a well-defined multilayered structure with embedded nanocrystallites of two typical sizes: 3-4 and 15-20 nm, and almost coherent epitaxy of the nanocrystallites with the Si matrix. The diode at zero bias conditions exhibited a current responsivity of 1.7 mA/W, an external quantum efficiency of about 0.2%, and a specific detectivity of 1.2 × 10(9) cm × Hz(1/2)/W at a wavelength of 1300 nm at room temperature. In the avalanche mode, the responsivity reached up to 20 mA/W (2% in terms of efficiency) with a value of avalanche gain equal to 5. The data obtained indicate that embedding of β-FeSi2 nanocrystallites into the depletion region of the Si p-n junction results in expansion of the spectral sensitivity up to 1600 nm and an increase of the photoresponse by more than two orders of magnitude in comparison with a conventional Si p-n junction. Thereby, fabricated structure combines advantage of the silicon photodiode functionality and simplicity with near infrared light detection capability of β-FeSi2.

  7. Josephson junction arrays

    International Nuclear Information System (INIS)

    Bindslev Hansen, J.; Lindelof, P.E.

    1985-01-01

    In this review we intend to cover recent work involving arrays of Josephson junctions. The work on such arrays falls naturally into three main areas of interest: 1. Technical applications of Josephson junction arrays for high-frequency devices. 2. Experimental studies of 2-D model systems (Kosterlitz-Thouless phase transition, commensurate-incommensurate transition in frustrated (flux) lattices). 3. Investigations of phenomena associated with non-equilibrium superconductivity in and around Josephson junctions (with high current density). (orig./BUD)

  8. Electron transport in doped fullerene molecular junctions

    Science.gov (United States)

    Kaur, Milanpreet; Sawhney, Ravinder Singh; Engles, Derick

    The effect of doping on the electron transport of molecular junctions is analyzed in this paper. The doped fullerene molecules are stringed to two semi-infinite gold electrodes and analyzed at equilibrium and nonequilibrium conditions of these device configurations. The contemplation is done using nonequilibrium Green’s function (NEGF)-density functional theory (DFT) to evaluate its density of states (DOS), transmission coefficient, molecular orbitals, electron density, charge transfer, current, and conductance. We conclude from the elucidated results that Au-C16Li4-Au and Au-C16Ne4-Au devices behave as an ordinary p-n junction diode and a Zener diode, respectively. Moreover, these doped fullerene molecules do not lose their metallic nature when sandwiched between the pair of gold electrodes.

  9. Equivalent Josephson junctions

    International Nuclear Information System (INIS)

    Boyadzhiev, T.L.; ); Semerdzhieva, E.G.; Shukrinov, Yu.M.; Fiziko-Tekhnicheskij Inst., Dushanbe

    2008-01-01

    The magnetic field dependences of critical current are numerically constructed for a long Josephson junction with a shunt- or resistor-type microscopic inhomogeneities and compared to the critical curve of a junction with exponentially varying width. The numerical results show that it is possible to replace the distributed inhomogeneity of a long Josephson junction by an inhomogeneity localized at one of its ends, which has certain technological advantages. It is also shown that the critical curves of junctions with exponentially varying width and inhomogeneities localized at the ends are unaffected by the mixed fluxon-antifluxon distributions of the magnetic flux [ru

  10. Systematic optimization of quantum junction colloidal quantum dot solar cells

    KAUST Repository

    Liu, Huan

    2012-01-01

    The recently reported quantum junction architecture represents a promising approach to building a rectifying photovoltaic device that employs colloidal quantum dot layers on each side of the p-n junction. Here, we report an optimized quantum junction solar cell that leverages an improved aluminum zinc oxide electrode for a stable contact to the n-side of the quantum junction and silver doping of the p-layer that greatly enhances the photocurrent by expanding the depletion region in the n-side of the device. These improvements result in greater stability and a power conversion efficiency of 6.1 under AM1.5 simulated solar illumination. © 2012 American Institute of Physics.

  11. Repercussion of Solid state vs. Liquid state synthesized p-n heterojunction RGO-copper phosphate on proton reduction potential in water.

    Science.gov (United States)

    Samal, Alaka; Das, Dipti P; Madras, Giridhar

    2018-02-13

    The same copper phosphate catalysts were synthesized by obtaining the methods involving solid state as well as liquid state reactions in this work. And then the optimised p-n hybrid junction photocatalysts have been synthesized following the same solid/liquid reaction pathways. The synthesized copper phosphate photocatalyst has unique rod, flower, caramel-treat-like morphology. The Mott-Schottky behavior is in accordance with the expected behavior of n-type semiconductor and the carrier concentration was calculated using the M-S analysis for the photocatalyst. And for the p-n hybrid junction of 8RGO-Cu 3 (PO 4 ) 2 -PA (PA abbreviated for photoassisted synthesis method), 8RGO-Cu 3 (PO 4 ) 2 -EG(EG abbreviated for Ethylene Glycol based synthesis method), 8RGO-Cu 3 (PO 4 ) 2 -PEG (PEG abbreviated for Poly(ethylene glycol)-block-poly(propylene glycol)-block-poly(ethylene glycol based synthesis method)the amount of H 2 synthesized was 7500, 6500 and 4500 µmol/h/g, respectively. The excited electrons resulting after the irradiation of visible light on the CB of p-type reduced graphene oxide (RGO) migrate easily to n-type Cu 3 (PO 4 ) 2 via. the p-n junction interfaces and hence great charge carrier separation was achieved.

  12. (p, p') and (p, n) reactions on halo nuclei

    International Nuclear Information System (INIS)

    Satou, Y; Nakamura, T; Fukuda, N; Sugimoto, T; Kondo, Y; Matsui, N; Hashimoto, Y; Nakabayashi, T; Okumura, T; Shinohara, M; Motobayashi, T; Yanagisawa, Y; Aoi, N; Takeuchi, S; Gomi, T; Togano, Y; Kawai, S; Sakurai, H; Ong, H J; Onishi, T K; Shimoura, S; Tamaki, M; Kobayashi, T; Otsu, H; Matsuda, Y; Endo, N; Kitayama, M; Ishihara, M

    2006-01-01

    We have measured the 1 H( 19 C, 18 C+n) 1 H and 1 H( 14 Be, 13 B+n)n reactions at 70 MeV/nucleon using the invariant mass method in inverse kinematics. A new state was identified at 1.49 MeV in 19 C. In the latter (p, n) reaction, a resonance peak corresponding to the 1.28 MeV state in 14 B recently reported in a beta-decay study was clearly observed. Forward peaked character in the differential cross section supports the 1 + assignment for this state

  13. Magnetostriction-strain-induced enhancement and modulation of photovoltaic performance in Si-p-n/TbxDy1-xFe2 composite

    International Nuclear Information System (INIS)

    Wu, Zheng; Zhang, Yihe; Fang, Cong; Ma, Ke; Lin, He; Jia, Yanmin; Chen, Jianrong; Wang, Yu; Chan, Helen Lai Wa

    2014-01-01

    High photovoltaic efficiency is a key index in the application of silicon (Si) solar cells. In this study, a composite of a photovoltaic Si p-n junction solar cell and a magnetostrictive Tb x Dy 1-x Fe 2 alloy was fabricated. By utilizing the magnetostrictive strain to modulate the energy bandgap of Si, the open-circuit voltage and the maximum photovoltaic output power of the Si p-n junction solar cell could be enhanced by ∝12% and 9.1% under a dc magnetic field of ∝250 mT, respectively. The significantly enhanced photovoltaic performance and the simple fabrication process make the Si-p-n/Tb x Dy 1-x Fe 2 composite a promising material for high-efficiency solar cell devices. The structure of the proposed Si-p-n/Tb x Dy 1-x Fe 2 laminated composite. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  14. Magnetostriction-strain-induced enhancement and modulation of photovoltaic performance in Si-p-n/Tb{sub x}Dy{sub 1-x}Fe{sub 2} composite

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Zheng [School of Materials Science and Technology, China University of Geosciences, Beijing (China); Department of Physics and College of Geography and Environmental Sciences, Zhejiang Normal University, Jinhua (China); Zhang, Yihe [School of Materials Science and Technology, China University of Geosciences, Beijing (China); Fang, Cong; Ma, Ke; Lin, He; Jia, Yanmin; Chen, Jianrong [Department of Physics and College of Geography and Environmental Sciences, Zhejiang Normal University, Jinhua (China); Wang, Yu; Chan, Helen Lai Wa [Department of Applied Physics, The Hong Kong Polytechnic University (China)

    2014-03-15

    High photovoltaic efficiency is a key index in the application of silicon (Si) solar cells. In this study, a composite of a photovoltaic Si p-n junction solar cell and a magnetostrictive Tb{sub x}Dy{sub 1-x}Fe{sub 2} alloy was fabricated. By utilizing the magnetostrictive strain to modulate the energy bandgap of Si, the open-circuit voltage and the maximum photovoltaic output power of the Si p-n junction solar cell could be enhanced by ∝12% and 9.1% under a dc magnetic field of ∝250 mT, respectively. The significantly enhanced photovoltaic performance and the simple fabrication process make the Si-p-n/Tb{sub x}Dy{sub 1-x}Fe{sub 2} composite a promising material for high-efficiency solar cell devices. The structure of the proposed Si-p-n/Tb{sub x}Dy{sub 1-x}Fe{sub 2} laminated composite. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  15. Benchmarking theoretical formalisms for (p ,p n ) reactions: The 15C(p ,p n )14C case

    Science.gov (United States)

    Yoshida, K.; Gómez-Ramos, M.; Ogata, K.; Moro, A. M.

    2018-02-01

    Background: Proton-induced knockout reactions of the form (p ,p N ) have experienced a renewed interest in recent years due to the possibility of performing these measurements with rare isotopes, using inverse kinematics. Several theoretical models are being used for the interpretation of these new data, such as the distorted-wave impulse approximation (DWIA), the transition amplitude formulation of the Faddeev equations due to Alt, Grassberger, and Sandhas (FAGS) and, more recently, a coupled-channels method here referred to as transfer-to-the- continuum (TC). Purpose: Our goal is to compare the momentum distributions calculated with the DWIA and TC models for the same reactions, using whenever possible the same inputs (e.g., distorting potential). A comparison with already published results for the FAGS formalism is performed as well. Method: We choose the 15C(p ,p n )14C reaction at an incident energy of 420 MeV/u, which has been previously studied with the FAGS formalism. The knocked-out neutron is assumed to be in a 2 s single-particle orbital. Longitudinal and transverse momentum distributions are calculated for different assumed separation energies. Results: For all cases considered, we find a very good agreement between DWIA and TC results. The energy dependence of the distorting optical potentials is found to affect in a modest way the shape and magnitude of the momentum distributions. Moreover, when relativistic kinematics corrections are omitted, our calculations reproduce remarkably well the FAGS result. Conclusions: The results found in this work provide confidence on the consistency and accuracy of the DWIA and TC models for analyzing momentum distributions for (p ,p n ) reactions at intermediate energies.

  16. Supramolecular tunneling junctions

    NARCIS (Netherlands)

    Wimbush, K.S.

    2012-01-01

    In this study a variety of supramolecular tunneling junctions were created. The basis of these junctions was a self-assembled monolayer of heptathioether functionalized ß-cyclodextrin (ßCD) formed on an ultra-flat Au surface, i.e., the bottom electrode. This gave a well-defined hexagonally packed

  17. Vertically p-n-junctioned GaN nano-wire array diode fabricated on Si(111) using MOCVD.

    Science.gov (United States)

    Park, Ji-Hyeon; Kim, Min-Hee; Kissinger, Suthan; Lee, Cheul-Ro

    2013-04-07

    We demonstrate the fabrication of n-GaN:Si/p-GaN:Mg nanowire arrays on (111) silicon substrate by metal organic chemical vapor deposition (MOCVD) method .The nanowires were grown by a newly developed two-step growth process. The diameter of as-grown nanowires ranges from 300-400 nm with a density of 6-7 × 10(7) cm(-2). The p- and n-type doping of the nanowires is achieved with Mg and Si dopant species. Structural characterization by X-ray diffraction (XRD) and high-resolution transmission electron microscopy (HRTEM) indicates that the nanowires are relatively defect-free. The room-temperature photoluminescence emission with a strong peak at 370 nm indicates that the n-GaN:Si/p-GaN:Mg nanowire arrays have potential application in light-emitting nanodevices. The cathodoluminscence (CL) spectrum clearly shows a distinct optical transition of GaN nanodiodes. The nano-n-GaN:Si/p-GaN:Mg diodes were further completed using a sputter coating approach to deposit Au/Ni metal contacts. The polysilazane filler has been etched by a wet chemical etching process. The n-GaN:Si/p-GaN:Mg nanowire diode was fabricated for different Mg source flow rates. The current-voltage (I-V) measurements reveal excellent rectifying properties with an obvious turn-on voltage at 1.6 V for a Mg flow rate of 5 sccm (standard cubic centimeters per minute).

  18. Estimation of conduction and displacement currents on p-n-junction in electromagnetic superhigh-frequency field

    International Nuclear Information System (INIS)

    Shamirzaev, S.Kh.; Dadamirzaev, M.G.; Gulyamov, G.; Gulyamov, A.G.

    2009-01-01

    Current generated in semiconductor diode that is in variable field is shown to define only by convection current, but the average value of displacement current is always zero and has not influence on current, outgoing from diode. This conclusion explains an origin of generated currents in different diode in electromagnetic field. The formula is found out allowing one to calculate the diode current with any nonlinear feature. (authors)

  19. The effect of charge collection recovery in silicon p-n junction detectors irradiated by different particles

    International Nuclear Information System (INIS)

    Verbitskaya, E.; Abreu, M.; Anbinderis, P.; Anbinderis, T.; D'Ambrosio, N.; Boer, W. de; Borchi, E.; Borer, K.; Bruzzi, M.; Buontempo, S.; Casagrande, L.; Chen, W.; Cindro, V.; Dezillie, B.; Dierlamm, A.; Eremin, V.; Gaubas, E.; Gorbatenko, V.; Granata, V.; Grigoriev, E.; Grohmann, S.; Hauler, F.; Heijne, E.; Heising, S.; Hempel, O.; Herzog, R.; Haerkoenen, J.; Ilyashenko, I.; Janos, S.; Jungermann, L.; Kalesinskas, V.; Kapturauskas, J.; Laiho, R.; Li, Z.; Mandic, I.; De Masi, Rita; Menichelli, D.; Mikuz, M.; Militaru, O.; Niinikoski, T.O.; O'Shea, V.; Pagano, S.; Palmieri, V.G.; Paul, S.; Perea Solano, B.; Piotrzkowski, K.; Pirollo, S.; Pretzl, K.; Rato Mendes, P.; Ruggiero, G.; Smith, K.; Sonderegger, P.; Sousa, P.; Tuominen, E.; Vaitkus, J.; Da Via, C.; Wobst, E.; Zavrtanik, M.

    2003-01-01

    The recovery of the charge collection efficiency (CCE) at low temperatures, the so-called 'Lazarus effect', was studied in Si detectors irradiated by fast reactor neutrons, by protons of medium and high energy, by pions and by gamma-rays. The experimental results show that the Lazarus effect is observed: (a) after all types of irradiation; (b) before and after space charge sign inversion; (c) only in detectors that are biased at voltages resulting in partial depletion at room temperature. The experimental temperature dependence of the CCE for proton-irradiated detectors shows non-monotonic behaviour with a maximum at a temperature defined as the CCE recovery temperature. The model of the effect for proton-irradiated detectors agrees well with that developed earlier for detectors irradiated by neutrons. The same midgap acceptor-type and donor-type levels are responsible for the Lazarus effect in detectors irradiated by neutrons and by protons. A new, abnormal 'zigzag'-shaped temperature dependence of the CCE was observed for detectors irradiated by all particles (neutrons, protons and pions) and by an ultra-high dose of γ-rays, when operating at low bias voltages. This effect is explained in the framework of the double-peak electric field distribution model for heavily irradiated detectors. The redistribution of the space charge region depth between the depleted regions adjacent to p + and n + contacts is responsible for the 'zigzag'- shaped curves. It is shown that the CCE recovery temperature increases with reverse bias in all detectors, regardless of the type of radiation

  20. The problem of crowd crimes: the approach of P.N. Obninskiy

    Directory of Open Access Journals (Sweden)

    Gorbatov D.S.

    2014-09-01

    Full Text Available We describe the specific approach to crowd crimes proposed by prominent Russian lawyer and public figure of the XIX century P.N. Obninskiy. We clarify its fundamental differences from other concepts of Russian and foreign psychologists and lawyers. Particular attention is paid to the P.N. Obninskiy treatment of possible sanity and responsibility of participants of mass cholera riots of the late XIX century in various regions of the Russian Empire. We reveal the moral potential of his views. Crowd as a social associations, the personality changes in the crowd, the crowd propensity to violate the law, the issue of punishment for crimes committed by it – these are some of the questions that interested the public opinion of the time. The article emphasizes that the lack of trust and lack of equal dialogue between representatives of different social groups have played a negative role in the development of «contagion morale», and later became reasons for the even more tragic events of Russian history.

  1. Primary Tunnel Junction Thermometry

    International Nuclear Information System (INIS)

    Pekola, Jukka P.; Holmqvist, Tommy; Meschke, Matthias

    2008-01-01

    We describe the concept and experimental demonstration of primary thermometry based on a four-probe measurement of a single tunnel junction embedded within four arrays of junctions. We show that in this configuration random sample specific and environment-related errors can be avoided. This method relates temperature directly to Boltzmann constant, which will form the basis of the definition of temperature and realization of official temperature scales in the future

  2. Coaxial nuclear radiation detector with deep junction and radial field gradient

    International Nuclear Information System (INIS)

    Hall, R.N.

    1979-01-01

    Germanium radiation detectors are manufactured by diffusion lithium into high purity p-type germanium. The diffusion is most readily accomplished from a lithium-lead-bismuth alloy at approximately 430 0 and is monitored by a quartz half cell containing a standard composition of this alloy. Detectors having n-type cores may be constructed by converting high purity p-type germanium to n-type by a lithium diffusion and subsequently diffusing some of the lithium back out through the surface to create a deep p-n junction. Coaxial germanium detectors comprising deep p-n junctions are produced by the lithium diffusion process

  3. Quantum Junction Solar Cells

    KAUST Repository

    Tang, Jiang

    2012-09-12

    Colloidal quantum dot solids combine convenient solution-processing with quantum size effect tuning, offering avenues to high-efficiency multijunction cells based on a single materials synthesis and processing platform. The highest-performing colloidal quantum dot rectifying devices reported to date have relied on a junction between a quantum-tuned absorber and a bulk material (e.g., TiO 2); however, quantum tuning of the absorber then requires complete redesign of the bulk acceptor, compromising the benefits of facile quantum tuning. Here we report rectifying junctions constructed entirely using inherently band-aligned quantum-tuned materials. Realizing these quantum junction diodes relied upon the creation of an n-type quantum dot solid having a clean bandgap. We combine stable, chemically compatible, high-performance n-type and p-type materials to create the first quantum junction solar cells. We present a family of photovoltaic devices having widely tuned bandgaps of 0.6-1.6 eV that excel where conventional quantum-to-bulk devices fail to perform. Devices having optimal single-junction bandgaps exhibit certified AM1.5 solar power conversion efficiencies of 5.4%. Control over doping in quantum solids, and the successful integration of these materials to form stable quantum junctions, offers a powerful new degree of freedom to colloidal quantum dot optoelectronics. © 2012 American Chemical Society.

  4. High-Performance Visible-Blind Ultraviolet Photodetector Based on IGZO TFT Coupled with p-n Heterojunction.

    Science.gov (United States)

    Yu, Jingjing; Javaid, Kashif; Liang, Lingyan; Wu, Weihua; Liang, Yu; Song, Anran; Zhang, Hongliang; Shi, Wen; Chang, Ting-Chang; Cao, Hongtao

    2018-03-07

    A visible-blind ultraviolet (UV) photodetector was designed based on a three-terminal electronic device of thin-film transistor (TFT) coupled with two-terminal p-n junction optoelectronic device, in hope of combining the beauties of both of the devices together. Upon the uncovered back-channel surface of amorphous indium-gallium-zinc-oxide (IGZO) TFT, we fabricated PEDOT:PSS/SnO x /IGZO heterojunction structure, through which the formation of a p-n junction and directional carrier transfer of photogenerated carriers were experimentally validated. As expected, the photoresponse characteristics of the newly designed photodetector, with a photoresponsivity of 984 A/W at a wavelength of 320 nm, a UV-visible rejection ratio up to 3.5 × 10 7 , and a specific detectivity up to 3.3 × 10 14 Jones, are not only competitive compared to the previous reports but also better than those of the pristine IGZO phototransistor. The hybrid photodetector could be operated in the off-current region with low supply voltages (<0.1 V) and ultralow power dissipation (<10 nW under illumination and ∼0.2 pW in the dark). Moreover, by applying a short positive gate pulse onto the gate, the annoying persistent photoconductivity presented in the wide band gap oxide-based devices could be suppressed conveniently, in hope of improving the response rate. With the terrific photoresponsivity along with the advantages of photodetecting pixel integration, the proposed phototransistor could be potentially used in high-performance visible-blind UV photodetector pixel arrays.

  5. Photovoltaic Cells Improvised With Used Bipolar Junction Transistors

    International Nuclear Information System (INIS)

    Akintayo, J. A

    2002-01-01

    The understanding of the underlying principle that the solar cell consists of a p-n junction is exploited to adapt the basic NPN or PNP Bipolar Junction Transistors (BJT) to serve as solar cells. In this mode the in improvised solar cell have employed just the emitter and the base sections with an intact emitter/base junction as the active PN area. The improvised devices tested screened and sorted are wired up in strings, blocks and modules. The photovoltaic modules realised tested as close replica of solar cells with output voltage following insolation level. Further work need be done on the modules to make them generate usable levels of output voltage and current

  6. Binary Oxide p-n Heterojunction Piezoelectric Nanogenerators with an Electrochemically Deposited High p-Type Cu2O Layer.

    Science.gov (United States)

    Baek, Seung Ki; Kwak, Sung Soo; Kim, Joo Sung; Kim, Sang Woo; Cho, Hyung Koun

    2016-08-31

    The high performance of ZnO-based piezoelectric nanogenerators (NGs) has been limited due to the potential screening from intrinsic electron carriers in ZnO. We have demonstrated a novel approach to greatly improve piezoelectric power generation by electrodepositing a high-quality p-type Cu2O layer between the piezoelectric semiconducting film and the metal electrode. The p-n heterojunction using only oxides suppresses the screening effect by forming an intrinsic depletion region, and thus sufficiently enhances the piezoelectric potential, compared to the pristine ZnO piezoelectric NG. Interestingly, a Sb-doped Cu2O layer has high mobility and low surface trap states. Thus, this doped layer is an attractive p-type material to significantly improve piezoelectric performance. Our results revealed that p-n junction NGs consisting of Au/ZnO/Cu2O/indium tin oxide with a Cu2O:Sb (cuprous oxide with a small amount of antimony) layer of sufficient thickness (3 μm) exhibit an extraordinarily high piezoelectric potential of 0.9 V and a maximum output current density of 3.1 μA/cm(2).

  7. Charge exchange probes of nuclear structure and interactions with emphasis on (p,n)

    International Nuclear Information System (INIS)

    Goodman, C.D.

    1980-01-01

    New results from (p,n) studies at IUCF show that it is possible to observe Gamow-Teller (GT) strength and extract GT matrix elements from (p,n) measurements. The charge exchange reactions ( 6 Li, 6 He) and (π + ,π 0 ) involve different projectile quantum numbers, and the relationships of these reactions to (p,n) is discussed

  8. Lateral Concepts

    DEFF Research Database (Denmark)

    Gad, Christopher; Bruun Jensen, casper

    2016-01-01

    This essay discusses the complex relation between the knowledges and practices of the researcher and his/her informants in terms of lateral concepts. The starting point is that it is not the prerogative of the (STS) scholar to conceptualize the world; all our “informants” do it too. This creates...... the possibility of enriching our own conceptual repertoires by letting them be inflected by the concepts of those we study. In a broad sense, the lateral means that there is a many-to-many relation between domains of knowledge and practice. However, each specific case of the lateral is necessarily immanent...... to a particular empirical setting and form of inquiry. In this sense lateral concepts are radically empirical since it locates concepts within the field. To clarify the meaning and stakes of lateral concepts, we first make a contrast between lateral anthropology and Latour’s notion of infra-reflexivity. We end...

  9. Hydrogen Passivation of N(+)P and P(+)N Heteroepitaxial InP Solar Cell Structures

    Science.gov (United States)

    Chatterjee, B.; Davis, W. C.; Ringel, S. A.; Hoffman, R., Jr.

    1995-01-01

    Dislocations and related point defect complexes caused by lattice mismatch currently limit the performance of heteroepitaxial InP cells by introducing shunting paths across the active junction and by the formation of deep traps within the base region. We have previously demonstrated that plasma hydrogenation is an effective and stable means to passivate the electrical activity of such defects in specially designed heteroepitaxial InP test structures to probe hydrogen passivation at typical base depths within a cell structure. In this work, we present our results on the hydrogen passivation of actual heteroepitaxial n(+)p and p(+)n InP cell structures grown on GaAs substrates by metalorganic chemical vapor deposition (MOCVD). We have found that a 2 hour exposure to a 13.56 MHz hydrogen plasma at 275 C reduces the deep level concentration in the base regions of both n(+)p and p(+)n heteroepitaxial InP cell structures from as-grown values of 5 - 7 x 10(exp 14)/cc, down to 3 - 5 x 10(exp 12)/cc. All dopants were successfully reactivated by a 400 C, 5 minute anneal With no detectable activation of deep levels. I-V analysis indicated a subsequent approx. 100 fold decrease In reverse leakage current at -1 volt reverse bias, and an improved built in voltage for the p(+)n structures. ln addition to being passivated,dislocations are also shown to participate in secondary interactions during hydrogenation. We find that the presence of dislocations enhances hydrogen diffusion into the cell structure, and lowers the apparent dissociation energy of Zn-H complexes from 1.19 eV for homoepitaxial Zn-doped InP to 1.12 eV for heteroepitaxial Zn-doped InP. This is explained by additional hydrogen trapping at dislocations subsequent to the reactivation of Zn dopants after hydrogenation.

  10. Hydrogen passivation of N(+)-P and P(+)-N heteroepitaxial InP solar cell structures

    Science.gov (United States)

    Chatterjee, Basab; Davis, William C.; Ringel, Steve A.; Hoffman, Richard, Jr.

    1996-01-01

    Dislocations and related point defect complexes caused by lattice mismatch currently limit the performance of heteroepitaxial InP cells by introducing shunting paths across the active junction and by the formation of deep traps within the base region. We have previously demonstrated that plasma hydrogenation is an effective and stable means to passivate the electrical activity of such defects in specially designed heteroepitaxial InP test structures to probe hydrogen passivation at typical base depths within a cell structure. In this work, we present our results on the hydrogen passivation of actual heteroepitaxial n-p and p-n InP cell structures grown on GaAs substrates by metalorganic chemical vapor deposition (MOCVD). We have found that a 2 hour exposure to a 13.56 MHz hydrogen plasma at 275 C reduces the deep level concentration in the base regions of both n(+)-p and p(+)-n heteroepitaxial InP cell structures from as-grown values of 5-7 x 10(exp 14) cm(exp -3), down to 3-5 x 10(exp 12) cm(exp -3). All dopants were successfully reactivated by a 400 C, 5 minute anneal with no detectable activation of deep levels. One to five analysis indicated a subsequent approximately 100 fold decrease in reverse leakage current at -1 volt reverse bias, and an improved built in voltage for the p(+)-n structures. In addition to being passivated, dislocations are also shown to participate in secondary interactions during hydrogenation. We find that the presence of dislocations enhances hydrogen diffusion into the cell structure, and lowers the apparent dissociation energy of Zn-H complexes from 1.19 eV for homoepitaxial Zn-doped InP to 1.12 eV for heteroepitaxial Zn-doped InP. This is explained by additional hydrogen trapping at dislocations subsequent to the reactivation of Zn dopants after hydrogenation.

  11. Four-junction superconducting circuit

    Science.gov (United States)

    Qiu, Yueyin; Xiong, Wei; He, Xiao-Ling; Li, Tie-Fu; You, J. Q.

    2016-01-01

    We develop a theory for the quantum circuit consisting of a superconducting loop interrupted by four Josephson junctions and pierced by a magnetic flux (either static or time-dependent). In addition to the similarity with the typical three-junction flux qubit in the double-well regime, we demonstrate the difference of the four-junction circuit from its three-junction analogue, including its advantages over the latter. Moreover, the four-junction circuit in the single-well regime is also investigated. Our theory provides a tool to explore the physical properties of this four-junction superconducting circuit. PMID:27356619

  12. Tunable Nitride Josephson Junctions.

    Energy Technology Data Exchange (ETDEWEB)

    Missert, Nancy A. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Henry, Michael David [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Lewis, Rupert M. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Howell, Stephen W. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Wolfley, Steven L. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Brunke, Lyle Brent [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Wolak, Matthaeus [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

    2017-12-01

    We have developed an ambient temperature, SiO2/Si wafer - scale process for Josephson junctions based on Nb electrodes and Ta x N barriers with tunable electronic properties. The films are fabricated by magnetron sputtering. The electronic properties of the TaxN barriers are controlled by adjusting the nitrogen flow during sputtering. This technology offers a scalable alternative to the more traditional junctions based on AlOx barriers for low - power, high - performance computing.

  13. Quantum Junction Solar Cells

    KAUST Repository

    Tang, Jiang; Liu, Huan; Zhitomirsky, David; Hoogland, Sjoerd; Wang, Xihua; Furukawa, Melissa; Levina, Larissa; Sargent, Edward H.

    2012-01-01

    -performing colloidal quantum dot rectifying devices reported to date have relied on a junction between a quantum-tuned absorber and a bulk material (e.g., TiO 2); however, quantum tuning of the absorber then requires complete redesign of the bulk acceptor, compromising

  14. Field-In-Field Technique With Intrafractionally Modulated Junction Shifts for Craniospinal Irradiation

    International Nuclear Information System (INIS)

    Yom, Sue S.; Frija, Erik K. C.; Mahajan, Anita; Chang, Eric; Klein, Kelli C.; Shiu, Almon; Ohrt, Jared; Woo, Shiao

    2007-01-01

    Purpose: To plan craniospinal irradiation with 'field-in-field' (FIF) homogenization in combination with daily, intrafractional modulation of the field junctions, to minimize the possibility of spinal cord overdose. Methods and Materials: Lateral cranial fields and posterior spinal fields were planned using a forward-planned, step-and-shoot FIF technique. Field junctions were automatically modulated and custom-weighted for maximal homogeneity within each treatment fraction. Dose-volume histogram analyses and film dosimetry were used to assess results. Results: Plan inhomogeneity improved with FIF. Planning with daily modulated junction shifts provided consistent dose delivery during each fraction of treatment across the junctions. Modulation minimized the impact of a 5-mm setup error at the junction. Film dosimetry confirmed that no point in the junction exceeded the anticipated dose. Conclusions: Field-in-field planning and modulated junction shifts improve the homogeneity and consistency of daily dose delivery, simplify treatment, and reduce the impact of setup errors

  15. Magnetoresistance in Co/AlO sub x /Co tunnel junction arrays

    CERN Document Server

    Urech, M; Haviland, D B

    2002-01-01

    Lateral arrays of Co/AlO sub x /Co junctions with dimensions down to 60 nm and inter-junction separations approx 60-100 nm have been fabricated and analyzed for possible coherent tunneling effects. Extra attention is paid to avoid uncertainties due to inconsistencies in switching and/or resistance of successive barriers. We observe approx 10% magnetoresistance enhancement at moderate bias in double junctions that cannot be accounted for by a simple model of two resistsors in series.

  16. Josephson junctions array resonators

    Energy Technology Data Exchange (ETDEWEB)

    Gargiulo, Oscar; Muppalla, Phani; Mirzaei, Iman; Kirchmair, Gerhard [Institute for Quantum Optics and Quantum Information, Innsbruck (Austria)

    2016-07-01

    We present an experimental analysis of the self- and cross-Kerr effect of extended plasma resonances in Josephson junction chains. The chain consists of 1600 individual junctions and we can measure quality factors in excess of 10000. The Kerr effect manifests itself as a frequency shift that depends linearly on the number of photons in a resonant mode. By changing the input power we are able to measure this frequency shift on a single mode (self-kerr). By changing the input power on another mode while measuring the same one, we are able to evaluate the cross-kerr effect. We can measure the cross-Kerr effect by probing the resonance frequency of one mode while exciting another mode of the array with a microwave drive.

  17. Curved Josephson junction

    International Nuclear Information System (INIS)

    Dobrowolski, Tomasz

    2012-01-01

    The constant curvature one and quasi-one dimensional Josephson junction is considered. On the base of Maxwell equations, the sine–Gordon equation that describes an influence of curvature on the kink motion was obtained. It is showed that the method of geometrical reduction of the sine–Gordon model from three to lower dimensional manifold leads to an identical form of the sine–Gordon equation. - Highlights: ► The research on dynamics of the phase in a curved Josephson junction is performed. ► The geometrical reduction is applied to the sine–Gordon model. ► The results of geometrical reduction and the fundamental research are compared.

  18. The cranial-spinal junction in medulloblastoma: does it matter?

    International Nuclear Information System (INIS)

    Narayana, Ashwatha; Jeswani, Sam; Paulino, Arnold C.

    1999-01-01

    Purpose: Late effects of treatment in children and young adults with medulloblastoma can be influenced by the technique employed in radiating the craniospinal axis. The purpose of this study is to determine whether the placement of the cranial-spinal junction has an impact on dose to the cervical spinal cord and surrounding organs. Methods and Materials: Five patients underwent computed tomography (CT) simulation in the prone position for craniospinal irradiation. A dose of 36 Gy was prescribed to the entire neuraxis. The doses to the cervical spinal cord and surrounding organs were calculated using a cranial-spinal junction at the C1-C2 vertebral interspace (high junction) or at the lowest point in the neck, with exclusion of the shoulders in the lateral cranial fields (low junction).The volume of critical organs at risk, as well as dose to these structures using the cranial and spinal field(s) were outlined and calculated using the CMS FOCUS 3-dimensional treatment planning system. Results: The average dose to the cervical spinal cord was 11.9% higher than the prescribed dose with the low junction, and 6.7% higher with the high junction. However, doses to the thyroid gland, mandible, pharynx, and larynx were increased by an average of 29.6%, 75.8%, 70.6%, and 227.7%, respectively, by the use of the high junction compared to the low junction. Conclusion: A higher dose to the cervical spinal cord can be minimized by using a high junction. However, this would be at the cost of substantially increased doses to surrounding organs such as the thyroid gland, mandible, pharynx, and larynx. This can be critical in children and young adults, where hypothyroidism, mandibular hypoplasia, and development of second malignancies may be a late sequela of radiation therapy

  19. Two dimensional MoS{sub 2}/graphene p-n heterojunction diode: Fabrication and electronic characteristics

    Energy Technology Data Exchange (ETDEWEB)

    Su, Wei-Jhih [Graduate Institute of Electro-Optical Engineering, National Taiwan University of Science and Technology, 43, Section 4, Keelung Road, Taipei 10607, Taiwan (China); Chang, Hsuan-Chen [Department of Electronic and Computer Engineering, National Taiwan University of Science and Technology, 43, Section 4, Keelung Road, Taipei 10607, Taiwan (China); Shih, Yi-Ting [Graduate Institute of Electro-Optical Engineering, National Taiwan University of Science and Technology, 43, Section 4, Keelung Road, Taipei 10607, Taiwan (China); Wang, Yi-Ping [Department of Electronic and Computer Engineering, National Taiwan University of Science and Technology, 43, Section 4, Keelung Road, Taipei 10607, Taiwan (China); Hsu, Hung-Pin [Department of Electronic Engineering, Ming Chi University of Technology, 84 Gungjuan Road, New Taipei City 24301, Taiwan (China); Huang, Ying-Sheng [Graduate Institute of Electro-Optical Engineering, National Taiwan University of Science and Technology, 43, Section 4, Keelung Road, Taipei 10607, Taiwan (China); Department of Electronic and Computer Engineering, National Taiwan University of Science and Technology, 43, Section 4, Keelung Road, Taipei 10607, Taiwan (China); Lee, Kuei-Yi, E-mail: kylee@mail.ntust.edu.tw [Graduate Institute of Electro-Optical Engineering, National Taiwan University of Science and Technology, 43, Section 4, Keelung Road, Taipei 10607, Taiwan (China); Department of Electronic and Computer Engineering, National Taiwan University of Science and Technology, 43, Section 4, Keelung Road, Taipei 10607, Taiwan (China)

    2016-06-25

    Molybdenum disulfide (MoS{sub 2}) films are currently the most potential semiconductor materials of the two-dimensional nano-material heterojunction. Few-layer MoS{sub 2} is an n-type semiconductor that has good mechanical strength, high carrier mobility, and has similar thickness as graphene. Graphene is presently the thinnest two-dimensional material with good thermal conductivity and high carrier mobility. The graphene Fermi level can be precisely controlled using the oxygen adsorption. Therefore, graphene can be tuned from zero-gap to p-type semiconductor material using the amount of adsorbed oxygen. In this study we combine few-layer MoS{sub 2} and graphene to produce a heterojunction and exhaustively study the interface properties for heterojunction diode application. According to the results, the MoS{sub 2} band-gap increases with decreasing thickness. The I–V characteristics of the MoS{sub 2}/Graphene p-n junction diodes can be precisely tuned by adjusting different thicknesses of the MoS{sub 2} films. By applying our fabricating method, MoS{sub 2}/Graphene heterojunction diode can be easily constructed and have potential to different applications. - Highlights: • We controlled the layer thickness of MoS{sub 2} by different exfoliation times. • We presented Raman scattering of MoS{sub 2} and define their layers number. • The few-layer MoS{sub 2}/graphene pn junction diode was synthesized. • We measured the device current and voltage characteristics. • The built-in potential barrier could be adjusted by controlling MoS{sub 2} thicknesses.

  20. The empirical connection between (p,n) cross sections and beta decay transition strengths

    International Nuclear Information System (INIS)

    Taddeucci, T.N.

    1988-01-01

    A proportionality is assumed to exist between 0/degree/ (p,n) cross sections and the corresponding beta decay transition strengths. The validity of this assumption is tested by comparison of measured (p,n) cross sections and analogous beta decay strengths. Distorted waves impulse approximation calculations also provide useful estimates of the accuracy of the proportionality relationship. 14 refs., 10 figs

  1. Strain distributions and their influence on electronic structures of WSe2-MoS2 laterally strained heterojunctions

    Science.gov (United States)

    Zhang, Chendong; Li, Ming-Yang; Tersoff, Jerry; Han, Yimo; Su, Yushan; Li, Lain-Jong; Muller, David A.; Shih, Chih-Kang

    2018-02-01

    Monolayer transition metal dichalcogenide heterojunctions, including vertical and lateral p-n junctions, have attracted considerable attention due to their potential applications in electronics and optoelectronics. Lattice-misfit strain in atomically abrupt lateral heterojunctions, such as WSe2-MoS2, offers a new band-engineering strategy for tailoring their electronic properties. However, this approach requires an understanding of the strain distribution and its effect on band alignment. Here, we study a WSe2-MoS2 lateral heterojunction using scanning tunnelling microscopy and image its moiré pattern to map the full two-dimensional strain tensor with high spatial resolution. Using scanning tunnelling spectroscopy, we measure both the strain and the band alignment of the WSe2-MoS2 lateral heterojunction. We find that the misfit strain induces type II to type I band alignment transformation. Scanning transmission electron microscopy reveals the dislocations at the interface that partially relieve the strain. Finally, we observe a distinctive electronic structure at the interface due to hetero-bonding.

  2. Controlled carrier screening in p-n NiO/GaN piezoelectric generators by an Al2O3 insertion layer

    Science.gov (United States)

    Johar, Muhammad Ali; Jeong, Dae Kyung; Afifi Hassan, Mostafa; Kang, Jin-Ho; Ha, Jun-Seok; Key Lee, June; Ryu, Sang-Wan

    2017-12-01

    The performance of a piezoelectric generator (PG) depends significantly on the internal screening process inside the device. As piezoelectric charges appear on both ends of the piezoelectric crystal, internal screening starts to decrease the piezoelectric bias. Therefore, the piezoelectric energy generated by external stress is not fully utilized by external circuit, which is the most challenging aspect of high-efficiency PGs. In this work, the internal screening effect of a NiO/GaN p-n PG was analyzed and controlled with an Al2O3 insertion layer. Internal screening in the p-n diode PG was categorized into free-carrier screening in neutral regions and junction screening due to charge drift across the junction. It was observed that junction screening could be significantly suppressed by inserting an Al2O3 layer and that effect was dominant in a leaky diode PG. With this implementation, the piezoelectric bias of the NiO/GaN PG was improved by a factor of ~100 for high-leakage diodes and a factor of ~1.6 for low-leakage diodes. Consequently, NiO/Al2O3/GaN PGs under a stress of 5 MPa provided a piezoelectric bias of 12.1 V and a current density of 2.25 µA cm-2. The incorporation of a highly resistive Al2O3 layer between p-NiO and n-GaN layers in NiO/GaN heterojunctions provides an efficient means of improving the piezoelectric performance by controlling the internal screening of the piezoelectric field.

  3. Electrical transport through Pb(Zr,Ti)O3 p-n and p-p heterostructures modulated by bound charges at a ferroelectric surface: Ferroelectric p-n diode

    Science.gov (United States)

    Watanabe, Yukio

    1999-05-01

    Current through (Pb,La)(Zr,Ti)O3 ferroelectrics on perovskite semiconductors is found to exhibit diode characteristics of which polarity is universally determined by the carrier conduction-type semiconductors. A persisting highly reproducible resistance modulation by a dc voltage, which has a short retention, is observed and is ascribed to a band bending of the ferroelectric by the formation of charged traps. This interpretation is consistent with a large relaxation current observed at a low voltage. On the other hand, a reproducible resistance modulation by a pulse voltage, which has a long retention, is observed in metal/(Pb,La)(Zr,Ti)O3/SrTiO3:Nb but not in metal/(Pb,La)(Zr,Ti)O3/(La,Sr)2CuO4 and is attributed to a possible band bending due to the spontaneous polarization (P) switching. The observed current voltage (IV) characteristics, the polarity dependence, the relaxation, and the modulation are explicable, if we assume a p-n or a p-p junction at the ferroelectric semiconductor interface (p: hole conduction type, n: electron conduction type). The analysis suggests that an intrinsically inhomogeneous P (∇P) near the ferroelectric/metal interface is likely very weak or existing in a very thin layer, when a reaction of the metal with the ferroelectric is eliminated. Additionally, the various aspects of transport through ferroelectrics are explained as a transport in the carrier depleted region.

  4. The human myotendinous junction

    DEFF Research Database (Denmark)

    Knudsen, A B; Larsen, M; Mackey, Abigail

    2015-01-01

    The myotendinous junction (MTJ) is a specialized structure in the musculotendinous system, where force is transmitted from muscle to tendon. Animal models have shown that the MTJ takes form of tendon finger-like processes merging with muscle tissue. The human MTJ is largely unknown and has never...... been described in three dimensions (3D). The aim of this study was to describe the ultrastructure of the human MTJ and render 3D reconstructions. Fourteen subjects (age 25 ± 3 years) with isolated injury of the anterior cruciate ligament (ACL), scheduled for reconstruction with a semitendinosus...

  5. Gap junctions and motor behavior

    DEFF Research Database (Denmark)

    Kiehn, Ole; Tresch, Matthew C.

    2002-01-01

    The production of any motor behavior requires coordinated activity in motor neurons and premotor networks. In vertebrates, this coordination is often assumed to take place through chemical synapses. Here we review recent data suggesting that electrical gap-junction coupling plays an important role...... in coordinating and generating motor outputs in embryonic and early postnatal life. Considering the recent demonstration of a prevalent expression of gap-junction proteins and gap-junction structures in the adult mammalian spinal cord, we suggest that neuronal gap-junction coupling might also contribute...... to the production of motor behavior in adult mammals....

  6. Strong enhancement of the luminescence decay time of isoelectronic centers in GaP:N at low temperatures

    Science.gov (United States)

    St-Jean, Philippe; Ethier-Majcher, Gabriel; Bergeron, Alaric; Francoeur, Sebastien

    2013-03-01

    We report (i)- results from ac impedance measurements obtained for intrinsic indium oxide films, grown under O2-rich conditions, (ii)- current-voltage (I-V) curves for p-n homojunctions fabricated by sequential growth of a 200 nm thick p-type In2O3 layer on a 400 nm thick n-type In2O3, and (iii)- capacitance-voltage (C-V) curves for these junctions. Impedance as well as I-V and C-V measurements were performed under UV irradiation and in darkness. We find two distinct contributions to the ac conductivity. One of them is brought about by grain boundaries, and the other one by inversion layers, which are on grain surfaces. In addition, we have found that photocurrents relax extremely slowly in these films. All of this fits consistently within a model in which mobile holes in inversion layers are responsible for p-type dc conductivity in intrinsic indium oxide films grown under O2-rich conditions. Such mechanism might be important in other polycrystalline thin films which have a large number of oxidizing defects at grain boundaries. We acknowledge support from grant MAT2012-38213-C02-01, from the Ministerio de Economia y Competividad, Spain.

  7. Oxide p-n Heterojunction of Cu2O/ZnO Nanowires and Their Photovoltaic Performance

    Directory of Open Access Journals (Sweden)

    Seung Ki Baek

    2013-01-01

    Full Text Available Oxide p-n heterojunction devices consisting of p-Cu2O/n-ZnO nanowires were fabricated on ITO/glass substrates and their photovoltaic performances were investigated. The vertically arrayed ZnO nanowires were grown by metal organic chemical vapor deposition, which was followed by the electrodeposition of the p-type Cu2O layer. Prior to the fabrication of solar cells, the effect of bath pH on properties of the absorber layers was studied to determine the optimal condition of the Cu2O electrodeposition process. With the constant pH 11 solution, the Cu2O layer preferred the (111 orientation, which gave low electrical resistivity and high optical absorption. The Cu2O (pH 11/ZnO nanowire-based solar cell exhibited a higher conversion efficiency of 0.27% than the planar structure solar cell (0.13%, because of the effective charge collection in the long wavelength region and because of the enhanced junction area.

  8. Angular Distributions of Neutrons from (p,n)-Reactions in some Mirror Nuclei

    Energy Technology Data Exchange (ETDEWEB)

    Stroemberg, L G; Wiedling, T; Holmqvist, B

    1964-04-15

    The angular distributions of neutrons from the reactions {sup 13}C (p,n) {sup 13}N and {sup 19}F (p, n) {sup 19}Ne have been measured for some energies close to the reactions threshold. For the reaction {sup 9}B (p, n) {sup 9}C angular distributions have been measured at several proton energies below the reaction threshold of the neutrons to the first excited state in {sup 11}C . A 5.5 MeV Van de Graaff has been used for the experiments. The neutrons were detected with a long counter. The measurements were carried out for 16 energies for the B (p,n) reaction, 3 energies for the C (p, n) reaction, and for 7 energies for the F 19(p, n) reaction. One of the main reasons for investigating these (p, n) reactions was to check whether the direct reaction process is important at low proton energies as well as close to reaction thresholds in nuclei consisting of closed shells of neutrons and protons either with an extra nucleon outside the closed shell or a nucleon hole. Comparisons with a theory proposed by Bloom, Glendenning, and Moszkowski have been performed.

  9. Sheep laterality.

    Science.gov (United States)

    Anderson, Dean M; Murray, Leigh W

    2013-01-01

    Turning preferences among 309 white-faced ewes were individually evaluated in an enclosed, artificially lit T-maze, followed by each ewe choosing either a right or left return alley to return to peers. Data recorded included time in the start box, time in the T-maze, exit arm chosen to leave the T-maze, and return alley. Right and left arms of the T-maze were chosen 65.7% and 34.3% of the time, respectively, while right and left return alleys were chosen 32.4% and 67.6%, respectively. Exit arm and return alley were not independently chosen (p laterality was not related (α =.05) to time of day the test was administered, ewe's age or genetics, most recent liveweight, or most recent shorn fleece weight. The mean time spent in the start box (21 s) was not related to exit arm (p =.947) or return alley (p =.779). Mean time (15 s) spent in the T-maze was not related to exit arm (p =.086) or return alley (p =.952). More research will be required to understand sheep turning laterality and how it can impact working facilities and research equipment.

  10. Heated junction thermocouple level measurement apparatus

    International Nuclear Information System (INIS)

    Bevilacqua, F.; Burger, J.M.

    1984-01-01

    A liquid level sensing apparatus senses the level of liquid surrounding the apparatus. A plurality of axially spaced sensors are enclosed in a separator tube. The separator tube tends to collapse the level of a two-phase fluid within the separator tube into essentially a liquid phase and a gaseous phase where the collapsed level bears a relationship to the coolant inventory outside the separator tube. The level of the liquid phase is sensed by level sensing apparatus. The separator tube contains inlet-outlet ports near the top and bottom thereof to equalize the liquid level inside and outside the separator tube when the level fluctuates or the water within the separator tube flashes to steam. Each sensor is comprised of a heater, a heated thermocouple junction and an unheated thermocouple junction within an elongated heat conductive housing. The heated portion of housing is enclosed in a splash guard with inlet-outlet ports near the top and bottom to equalize the liquid level inside and outside the splash guardand to eliminate the spurious indications of liquid level change which may arise if water droplets contact the housing in the region of the heater. To prevent steam bubbles entrained in a two-phase fluid cross flow from entering the lateral inlet-outlet ports of the separator tube, the separator tube is enclosed in support tube which may in turn be enclosed in an otherwise unused control element assembly shroud. The lateral inlet-outlet ports of separator tube are axially offset from lateral inlet-outlet ports of support tube at least where support tube is subjected to cross flow. The shroud is open on the bottom and has lateral inlet-outlet ports to facilitate liquid level fluctuations to equalize inside and outside shroud

  11. Junction detection and pathway selection

    Science.gov (United States)

    Peck, Alex N.; Lim, Willie Y.; Breul, Harry T.

    1992-02-01

    The ability to detect junctions and make choices among the possible pathways is important for autonomous navigation. In our script-based navigation approach where a journey is specified as a script of high-level instructions, actions are frequently referenced to junctions, e.g., `turn left at the intersection.' In order for the robot to carry out these kind of instructions, it must be able (1) to detect an intersection (i.e., an intersection of pathways), (2) know that there are several possible pathways it can take, and (3) pick the pathway consistent with the high level instruction. In this paper we describe our implementation of the ability to detect junctions in an indoor environment, such as corners, T-junctions and intersections, using sonar. Our approach uses a combination of partial scan of the local environment and recognition of sonar signatures of certain features of the junctions. In the case where the environment is known, we use additional sensor information (such as compass bearings) to help recognize the specific junction. In general, once a junction is detected and its type known, the number of possible pathways can be deduced and the correct pathway selected. Then the appropriate behavior for negotiating the junction is activated.

  12. Mixing in T-junctions

    NARCIS (Netherlands)

    Kok, Jacobus B.W.; van der Wal, S.

    1996-01-01

    The transport processes that are involved in the mixing of two gases in a T-junction mixer are investigated. The turbulent flow field is calculated for the T-junction with the k- turbulence model by FLOW3D. In the mathematical model the transport of species is described with a mixture fraction

  13. Dynamics of Josephson junction arrays

    International Nuclear Information System (INIS)

    Hadley, P.

    1989-01-01

    The dynamics of Josephson junction arrays is a topic that lies at the intersection of the fields of nonlinear dynamics and Josephson junction technology. The series arrays considered here consist of several rapidly oscillating Josephson junctions where each junction is coupled equally to every other junction. The purpose of this study is to understand phaselocking and other cooperative dynamics of this system. Previously, little was known about high dimensional nonlinear systems of this sort. Numerical simulations are used to study the dynamics of these arrays. Three distinct types of periodic solutions to the array equations were observed as well as period doubled and chaotic solutions. One of the periodic solutions is the symmetric, in-phase solution where all of the junctions oscillate identically. The other two periodic solutions are symmetry-broken solutions where all of the junction do not oscillate identically. The symmetry-broken solutions are highly degenerate. As many as (N - 1) stable solutions can coexist for an array of N junctions. Understanding the stability of these several solutions and the transitions among them is vital to the design of useful devices

  14. Solar energy converters based on multi-junction photoemission solar cells.

    Science.gov (United States)

    Tereshchenko, O E; Golyashov, V A; Rodionov, A A; Chistokhin, I B; Kislykh, N V; Mironov, A V; Aksenov, V V

    2017-11-23

    Multi-junction solar cells with multiple p-n junctions made of different semiconductor materials have multiple bandgaps that allow reducing the relaxation energy loss and substantially increase the power-conversion efficiency. The choice of materials for each sub-cell is very limited due to the difficulties in extracting the current between the layers caused by the requirements for lattice- and current-matching. We propose a new vacuum multi-junction solar cell with multiple p-n junctions separated by vacuum gaps that allow using different semiconductor materials as cathode and anode, both activated to the state of effective negative electron affinity (NEA). In this work, the compact proximity focused vacuum tube with the GaAs(Cs,O) photocathode and AlGaAs/GaAs-(Cs,O) anode with GaAs quantum wells (QWs) is used as a prototype of a vacuum single-junction solar cell. The photodiode with the p-AlGaAs/GaAs anode showed the spectral power-conversion efficiency of about 1% at V bias  = 0 in transmission and reflection modes, while, at V bias  = 0.5 V, the efficiency increased up to 10%. In terms of energy conservation, we found the condition at which the energy cathode-to-anode transition was close to 1. Considering only the energy conservation part, the NEA-cell power-conversion efficiency can rich a quantum yield value which is measured up to more than 50%.

  15. GaAs nanowire array solar cells with axial p-i-n junctions.

    Science.gov (United States)

    Yao, Maoqing; Huang, Ningfeng; Cong, Sen; Chi, Chun-Yung; Seyedi, M Ashkan; Lin, Yen-Ting; Cao, Yu; Povinelli, Michelle L; Dapkus, P Daniel; Zhou, Chongwu

    2014-06-11

    Because of unique structural, optical, and electrical properties, solar cells based on semiconductor nanowires are a rapidly evolving scientific enterprise. Various approaches employing III-V nanowires have emerged, among which GaAs, especially, is under intense research and development. Most reported GaAs nanowire solar cells form p-n junctions in the radial direction; however, nanowires using axial junction may enable the attainment of high open circuit voltage (Voc) and integration into multijunction solar cells. Here, we report GaAs nanowire solar cells with axial p-i-n junctions that achieve 7.58% efficiency. Simulations show that axial junctions are more tolerant to doping variation than radial junctions and lead to higher Voc under certain conditions. We further study the effect of wire diameter and junction depth using electrical characterization and cathodoluminescence. The results show that large diameter and shallow junctions are essential for a high extraction efficiency. Our approach opens up great opportunity for future low-cost, high-efficiency photovoltaics.

  16. Homojunction p-n photodiodes based on As-doped single ZnO nanowire

    International Nuclear Information System (INIS)

    Cho, H. D.; Zakirov, A. S.; Yuldashev, Sh. U.; Kang, T. W.; Ahn, C. W.; Yeo, Y. K.

    2013-01-01

    Photovoltaic device was successfully grown solely based on the single ZnO p-n homojunction nanowire. The ZnO nanowire p-n diode consists of an as-grown n-type segment and an in-situ arsenic doped p-type segment. This p-n homojunction acts as a good photovoltaic cell, producing a photocurrent almost 45 times larger than the dark current under reverse-biased condition. Our results demonstrate that present ZnO p-n homojunction nanowire can be used as a self-powered ultraviolet photodetector as well as a photovoltaic cell, which can also be used as an ultralow electrical power source for nano-scale electronic, optoelectronic, and medical devices

  17. InP tunnel junctions for InP/InGaAs tandem solar cells

    Science.gov (United States)

    Vilela, Mauro F.; Freundlich, Alex; Renaud, P.; Medelci, N.; Bensaoula, A.

    1996-01-01

    We report, for the first time, an epitaxially grown InP p(+)/n(++) tunnel junction. A diode with peak current densities up to 1600 A/cm and maximum specific resistivities (Vp/Ip - peak voltage to peak current ratio) in the range of 10(exp -4)Omega cm(exp 2) is obtained. This peak current density is comparable to the highest results previously reported for lattice matched In(0.53)Ga(0.47)As tunnel junctions. Both results were obtained using chemical beam epitaxy (CBE). In this paper we discuss the electrical characteristics of these tunnel diodes and how the growth conditions influence them.

  18. Theoretical study on junctions in porphyrin oligomers for nano scale devices

    International Nuclear Information System (INIS)

    Mizuseki, Hiroshi; Belosludov, Rodion V.; Farajian, Amir A.; Igarashi, Nobuaki; Kawazoe, Yoshiyuki

    2005-01-01

    A unimolecular rectifier could be built by combining two molecular sub-units that contain acceptor or donor groups. Porphyrin possesses good electron-donating properties due to its large, easily ionized, π-conjugated system. In this study, we propose that a rectifier diode could be created by combining two metal porphyrin molecules containing different metal atoms. This function would realize an effect similar to a p-n junction in a solid-state device. A Zn porphyrin-Ni porphyrin junction in a non-conjugated porphyrin system displays a localization of frontier orbitals that is similar to a rectifier function

  19. The synthesis and characterization of p(nBA-DEAEMA) polymer

    Science.gov (United States)

    Jiang, X. M.; Zhu, J.; Duan, Y. Y.

    2018-01-01

    In this paper, the polymer of p (nBA-DEAEMA) was polymerized and characterized. The structure of copolymer was characterized by FT-IR and 1HNMR, and the analysis of particle size, appearance and rheology was determined too. The results showed that, the p (nBA-DEAEMA) was synthesised successful, and it could become a surface modification for the inner face of artificial trachea, after further optimization.

  20. A modular approach to neutral P,N-ligands: synthesis and coordination chemistry

    Directory of Open Access Journals (Sweden)

    Vladislav Vasilenko

    2016-04-01

    Full Text Available We report the modular synthesis of three different types of neutral κ2-P,N-ligands comprising an imine and a phosphine binding site. These ligands were reacted with rhodium, iridium and palladium metal precursors and the structures of the resulting complexes were elucidated by means of X-ray crystallography. We observed that subtle changes of the ligand backbone have a significant influence on the binding geometry und coordination properties of these bidentate P,N-donors.

  1. Photodetection in p–n junctions formed by electrolyte-gated transistors of two-dimensional crystals

    KAUST Repository

    Kozawa, Daichi

    2016-11-16

    Transition metal dichalcogenide monolayers have attracted much attention due to their strong light absorption and excellent electronic properties. These advantages make this type of two-dimensional crystal a promising one for optoelectronic device applications. In the case of photoelectric conversion devices such as photodetectors and photovoltaic cells, p–n junctions are one of the most important devices. Here, we demonstrate photodetection with WSe2 monolayer films. We prepare the electrolyte-gated ambipolar transistors and electrostatic p–n junctions are formed by the electrolyte-gating technique at 270 K. These p-n junctions are cooled down to fix the ion motion (and p-n junctions) and we observed the reasonable photocurrent spectra without the external bias, indicating the formation of p-n junctions. Very interestingly, two-terminal devices exhibit higher photoresponsivity than that of three-terminal ones, suggesting the formation of highly balanced anion and cation layers. The maximum photoresponsivity reaches 5 mA/W in resonance with the first excitonic peak. Our technique provides important evidence for optoelectronics in atomically thin crystals.

  2. Photodetection in p–n junctions formed by electrolyte-gated transistors of two-dimensional crystals

    KAUST Repository

    Kozawa, Daichi; Pu, Jiang; Shimizu, Ryo; Kimura, Shota; Chiu, Ming-Hui; Matsuki, Keiichiro; Wada, Yoshifumi; Sakanoue, Tomo; Iwasa, Yoshihiro; Li, Lain-Jong; Takenobu, Taishi

    2016-01-01

    Transition metal dichalcogenide monolayers have attracted much attention due to their strong light absorption and excellent electronic properties. These advantages make this type of two-dimensional crystal a promising one for optoelectronic device applications. In the case of photoelectric conversion devices such as photodetectors and photovoltaic cells, p–n junctions are one of the most important devices. Here, we demonstrate photodetection with WSe2 monolayer films. We prepare the electrolyte-gated ambipolar transistors and electrostatic p–n junctions are formed by the electrolyte-gating technique at 270 K. These p-n junctions are cooled down to fix the ion motion (and p-n junctions) and we observed the reasonable photocurrent spectra without the external bias, indicating the formation of p-n junctions. Very interestingly, two-terminal devices exhibit higher photoresponsivity than that of three-terminal ones, suggesting the formation of highly balanced anion and cation layers. The maximum photoresponsivity reaches 5 mA/W in resonance with the first excitonic peak. Our technique provides important evidence for optoelectronics in atomically thin crystals.

  3. A charge-based model of Junction Barrier Schottky rectifiers

    Science.gov (United States)

    Latorre-Rey, Alvaro D.; Mudholkar, Mihir; Quddus, Mohammed T.; Salih, Ali

    2018-06-01

    A new charge-based model of the electric field distribution for Junction Barrier Schottky (JBS) diodes is presented, based on the description of the charge-sharing effect between the vertical Schottky junction and the lateral pn-junctions that constitute the active cell of the device. In our model, the inherently 2-D problem is transformed into a simple but accurate 1-D problem which has a closed analytical solution that captures the reshaping and reduction of the electric field profile responsible for the improved electrical performance of these devices, while preserving physically meaningful expressions that depend on relevant device parameters. The validation of the model is performed by comparing calculated electric field profiles with drift-diffusion simulations of a JBS device showing good agreement. Even though other fully 2-D models already available provide higher accuracy, they lack physical insight making the proposed model an useful tool for device design.

  4. Variability study of Si nanowire FETs with different junction gradients

    Directory of Open Access Journals (Sweden)

    Jun-Sik Yoon

    2016-01-01

    Full Text Available Random dopant fluctuation effects of gate-all-around Si nanowire field-effect transistors (FETs are investigated in terms of different diameters and junction gradients. The nanowire FETs with smaller diameters or shorter junction gradients increase relative variations of the drain currents and the mismatch of the drain currents between source-drain and drain-source bias change in the saturation regime. Smaller diameters decreased current drivability critically compared to standard deviations of the drain currents, thus inducing greater relative variations of the drain currents. Shorter junction gradients form high potential barriers in the source-side lightly-doped extension regions at on-state, which determines the magnitude of the drain currents and fluctuates the drain currents greatly under thermionic-emission mechanism. On the other hand, longer junction gradients affect lateral field to fluctuate the drain currents greatly. These physical phenomena coincide with correlations of the variations between drain currents and electrical parameters such as threshold voltages and parasitic resistances. The nanowire FETs with relatively-larger diameters and longer junction gradients without degrading short channel characteristics are suggested to minimize the relative variations and the mismatch of the drain currents.

  5. Instabilities in thin tunnel junctions

    International Nuclear Information System (INIS)

    Konkin, M.K.; Adler, J.G.

    1978-01-01

    Tunnel junctions prepared for inelastic electron tunneling spectroscopy are often plagued by instabilities in the 0-500-meV range. This paper relates the bias at which the instability occurs to the barrier thickness

  6. The Control of Junction Flows

    National Research Council Canada - National Science Library

    Smith, Charles

    1997-01-01

    An experimental study of the effects of spatially-limited (i.e. localized) surface suction on unsteady laminar and turbulent junction flows was performed using hydrogen bubble flow visualization and Particle Image Velocimetry (PIV...

  7. How I do it: surgical ligation of craniocervical junction dural AV fistulas.

    Science.gov (United States)

    Sorenson, Thomas J; La Pira, Biagia; Hughes, Joshua; Lanzino, Giuseppe

    2017-08-01

    Dural arteriovenous fistulas (DAVFs) of the craniocervical junction are uncommon vascular lesions, which often require surgical treatment even in the endovascular era. Most commonly, the fistula is placed laterally, and surgical ligation is performed through a lateral suboccipital craniotomy. After dural opening, the area is inspected, and the arterialized vein is identified emerging from the dura, often adjacent to the entry point of the vertebral artery, and ligated. A far lateral craniotomy is the authors' preferred surgical approach for accessing and treating dural arteriovenous fistulas of the craniocervical junction that cannot be reached endovascularly.

  8. Josephson junctions with ferromagnetic interlayer

    International Nuclear Information System (INIS)

    Wild, Georg Hermann

    2012-01-01

    We report on the fabrication of superconductor/insulator/ferromagnetic metal/superconductor (Nb/AlO x /Pd 0.82 Ni 0.18 /Nb) Josephson junctions (SIFS JJs) with high critical current densities, large normal resistance times area products, and high quality factors. For these junctions, a transition from 0- to π-coupling is observed for a thickness d F =6 nm of the ferromagnetic Pd 0.82 Ni 0.18 interlayer. The magnetic field dependence of the critical current of the junctions demonstrates good spatial homogeneity of the tunneling barrier and ferromagnetic interlayer. Magnetic characterization shows that the Pd 0.82 Ni 0.18 has an out-of-plane anisotropy and large saturation magnetization indicating negligible dead layers at the interfaces. A careful analysis of Fiske modes up to about 400 GHz provides valuable information on the junction quality factor and the relevant damping mechanisms. Whereas losses due to quasiparticle tunneling dominate at low frequencies, at high frequencies the damping is explained by the finite surface resistance of the junction electrodes. High quality factors of up to 30 around 200 GHz have been achieved. They allow to study the junction dynamics, in particular the switching probability from the zero-voltage into the voltage state with and without microwave irradiation. The experiments with microwave irradiation are well explained within semi-classical models and numerical simulations. In contrast, at mK temperature the switching dynamics without applied microwaves clearly shows secondary quantum effects. Here, we could observe for the first time macroscopic quantum tunneling in Josephson junctions with a ferromagnetic interlayer. This observation excludes fluctuations of the critical current as a consequence of an unstable magnetic domain structure of the ferromagnetic interlayer and affirms the suitability of SIFS Josephson junctions for quantum information processing.

  9. Josephson junctions with ferromagnetic interlayer

    Energy Technology Data Exchange (ETDEWEB)

    Wild, Georg Hermann

    2012-03-04

    We report on the fabrication of superconductor/insulator/ferromagnetic metal/superconductor (Nb/AlO{sub x}/Pd{sub 0.82}Ni{sub 0.18}/Nb) Josephson junctions (SIFS JJs) with high critical current densities, large normal resistance times area products, and high quality factors. For these junctions, a transition from 0- to {pi}-coupling is observed for a thickness d{sub F}=6 nm of the ferromagnetic Pd{sub 0.82}Ni{sub 0.18} interlayer. The magnetic field dependence of the critical current of the junctions demonstrates good spatial homogeneity of the tunneling barrier and ferromagnetic interlayer. Magnetic characterization shows that the Pd{sub 0.82}Ni{sub 0.18} has an out-of-plane anisotropy and large saturation magnetization indicating negligible dead layers at the interfaces. A careful analysis of Fiske modes up to about 400 GHz provides valuable information on the junction quality factor and the relevant damping mechanisms. Whereas losses due to quasiparticle tunneling dominate at low frequencies, at high frequencies the damping is explained by the finite surface resistance of the junction electrodes. High quality factors of up to 30 around 200 GHz have been achieved. They allow to study the junction dynamics, in particular the switching probability from the zero-voltage into the voltage state with and without microwave irradiation. The experiments with microwave irradiation are well explained within semi-classical models and numerical simulations. In contrast, at mK temperature the switching dynamics without applied microwaves clearly shows secondary quantum effects. Here, we could observe for the first time macroscopic quantum tunneling in Josephson junctions with a ferromagnetic interlayer. This observation excludes fluctuations of the critical current as a consequence of an unstable magnetic domain structure of the ferromagnetic interlayer and affirms the suitability of SIFS Josephson junctions for quantum information processing.

  10. Electronic thermometry in tunable tunnel junction

    Science.gov (United States)

    Maksymovych, Petro

    2016-03-15

    A tunable tunnel junction thermometry circuit includes a variable width tunnel junction between a test object and a probe. The junction width is varied and a change in thermovoltage across the junction with respect to the change in distance across the junction is determined. Also, a change in biased current with respect to a change in distance across the junction is determined. A temperature gradient across the junction is determined based on a mathematical relationship between the temperature gradient, the change in thermovoltage with respect to distance and the change in biased current with respect to distance. Thermovoltage may be measured by nullifying a thermoelectric tunneling current with an applied voltage supply level. A piezoelectric actuator may modulate the probe, and thus the junction width, to vary thermovoltage and biased current across the junction. Lock-in amplifiers measure the derivatives of the thermovoltage and biased current modulated by varying junction width.

  11. Peltier cooling in molecular junctions

    Science.gov (United States)

    Cui, Longji; Miao, Ruijiao; Wang, Kun; Thompson, Dakotah; Zotti, Linda Angela; Cuevas, Juan Carlos; Meyhofer, Edgar; Reddy, Pramod

    2018-02-01

    The study of thermoelectricity in molecular junctions is of fundamental interest for the development of various technologies including cooling (refrigeration) and heat-to-electricity conversion1-4. Recent experimental progress in probing the thermopower (Seebeck effect) of molecular junctions5-9 has enabled studies of the relationship between thermoelectricity and molecular structure10,11. However, observations of Peltier cooling in molecular junctions—a critical step for establishing molecular-based refrigeration—have remained inaccessible. Here, we report direct experimental observations of Peltier cooling in molecular junctions. By integrating conducting-probe atomic force microscopy12,13 with custom-fabricated picowatt-resolution calorimetric microdevices, we created an experimental platform that enables the unified characterization of electrical, thermoelectric and energy dissipation characteristics of molecular junctions. Using this platform, we studied gold junctions with prototypical molecules (Au-biphenyl-4,4'-dithiol-Au, Au-terphenyl-4,4''-dithiol-Au and Au-4,4'-bipyridine-Au) and revealed the relationship between heating or cooling and charge transmission characteristics. Our experimental conclusions are supported by self-energy-corrected density functional theory calculations. We expect these advances to stimulate studies of both thermal and thermoelectric transport in molecular junctions where the possibility of extraordinarily efficient energy conversion has been theoretically predicted2-4,14.

  12. Phenomenological study of the p p →π+p n reaction

    Science.gov (United States)

    Fäldt, G.; Wilkin, C.

    2018-02-01

    Fully constrained bubble chamber data on the p p →π+p n and p p →π+d reactions are used to investigate the ratio of the counting rates for the two processes as function of the p n excitation energy Q . Though it is important to include effects associated with the p -wave nature of pion production, the data are insufficient to establish unambiguously the dependence on Q . The angular distributions show the presence of higher partial waves which seem to be anomalously large at small Q . The dispersion relation method to determine scattering lengths is extended to encompass cases where, as for the p p →π+p n reaction, there is a bound state and, in a test example, it is shown that the values deduced for the low-energy neutron-proton scattering parameters are significantly influenced by the pion p -wave behavior.

  13. Deuteron disintegration in the neutrino scattering reaction ν + d → ν + p + n

    International Nuclear Information System (INIS)

    Rekalo, M.P.; Gakh, G.I.; Rekalo, A.P.

    1984-01-01

    General dependence on vector and tensor deutron polarizations of differential cross section of deuteron disintegration in the reaction of neutrino scattering V+d→ν+pν conditioned by neutral weak current is disclosed. Using locality of weak neutrino interaction with hadrons the dependence of differential cross section and their asymmetries conditioned by polarization of the target on two of five kinematic variables characterizing the ν+d→ν+p+n process and namely on azimuthal angle phi and parameter x associated with the degree of linear polarization of virtual Z-boson is established. Spin structure of vector and axial parts of neutral hadron currrent for the Z+d→p+n reaction is determined. It is shown that threshold amplitude of the Z+d→p+n reaction in the general case is characterized by five vector and five axial formfactors

  14. Epitaxial Growth of an Organic p-n Heterojunction: C60 on Single-Crystal Pentacene.

    Science.gov (United States)

    Nakayama, Yasuo; Mizuno, Yuta; Hosokai, Takuya; Koganezawa, Tomoyuki; Tsuruta, Ryohei; Hinderhofer, Alexander; Gerlach, Alexander; Broch, Katharina; Belova, Valentina; Frank, Heiko; Yamamoto, Masayuki; Niederhausen, Jens; Glowatzki, Hendrik; Rabe, Jürgen P; Koch, Norbert; Ishii, Hisao; Schreiber, Frank; Ueno, Nobuo

    2016-06-01

    Designing molecular p-n heterojunction structures, i.e., electron donor-acceptor contacts, is one of the central challenges for further development of organic electronic devices. In the present study, a well-defined p-n heterojunction of two representative molecular semiconductors, pentacene and C60, formed on the single-crystal surface of pentacene is precisely investigated in terms of its growth behavior and crystallographic structure. C60 assembles into a (111)-oriented face-centered-cubic crystal structure with a specific epitaxial orientation on the (001) surface of the pentacene single crystal. The present experimental findings provide molecular scale insights into the formation mechanisms of the organic p-n heterojunction through an accurate structural analysis of the single-crystalline molecular contact.

  15. R.f.-induced steps in mutually coupled, two-dimensional distributed Josephson tunnel junctions

    International Nuclear Information System (INIS)

    Klein, U.; Dammschneider, P.

    1991-01-01

    This paper reports on the amplitudes of the current steps in the I-V characteristics of mutually coupled two-dimensional distributed Josephson tunnel junctions driven by microwaves. For this purpose we use a numerical computation algorithm based on a planar resonator model for the individual Josephson tunnel junctions to calculate the d.c. current density distribution. In addition to the fundamental microwave frequency, harmonic contents of the tunneling current are also considered. The lateral dimensions of the individual junctions are small compared to the microwave wavelength and the Josephson penetration depth, giving an almost constant current density distribution. Therefore, the coupled junctions can give much greater step amplitudes than a single junction with an equal tunneling area, because of their nonuniform current density distribution

  16. Ligament augmentation for prevention of proximal junctional kyphosis and proximal junctional failure in adult spinal deformity.

    Science.gov (United States)

    Safaee, Michael M; Deviren, Vedat; Dalle Ore, Cecilia; Scheer, Justin K; Lau, Darryl; Osorio, Joseph A; Nicholls, Fred; Ames, Christopher P

    2018-05-01

    OBJECTIVE Proximal junctional kyphosis (PJK) is a well-recognized, yet incompletely defined, complication of adult spinal deformity surgery. There is no standardized definition for PJK, but most studies describe PJK as an increase in the proximal junctional angle (PJA) of greater than 10°-20°. Ligament augmentation is a novel strategy for PJK reduction that provides strength to the upper instrumented vertebra (UIV) and adjacent segments while also reducing junctional stress at those levels. METHODS In this study, ligament augmentation was used in a consecutive series of adult spinal deformity patients at a single institution. Patient demographics, including age; sex; indication for surgery; revision surgery; surgical approach; and use of 3-column osteotomies, vertebroplasty, or hook fixation at the UIV, were collected. The PJA was measured preoperatively and at last follow-up using 36-inch radiographs. Data on change in PJA and need for revision surgery were collected. Univariate and multivariate analyses were performed to identify factors associated with change in PJA and proximal junctional failure (PJF), defined as PJK requiring surgical correction. RESULTS A total of 200 consecutive patients were included: 100 patients before implementation of ligament augmentation and 100 patients after implementation of this technique. The mean age of the ligament augmentation cohort was 66 years, and 67% of patients were women. Over half of these cases (51%) were revision surgeries, with 38% involving a combined anterior or lateral and posterior approach. The mean change in PJA was 6° in the ligament augmentation group compared with 14° in the control group (p historical cohort, ligament augmentation is associated with a significant decrease in PJK and PJF. These data support the implementation of ligament augmentation in surgery for adult spinal deformity, particularly in patients with a high risk of developing PJK and PJF.

  17. Concept and design of super junction devices

    Science.gov (United States)

    Zhang, Bo; Zhang, Wentong; Qiao, Ming; Zhan, Zhenya; Li, Zhaoji

    2018-02-01

    The super junction (SJ) has been recognized as the " milestone” of the power MOSFET, which is the most important innovation concept of the voltage-sustaining layer (VSL). The basic structure of the SJ is a typical junction-type VSL (J-VSL) with the periodic N and P regions. However, the conventional VSL is a typical resistance-type VSL (R-VSL) with only an N or P region. It is a qualitative change of the VSL from the R-VSL to the J-VSL, introducing the bulk depletion to increase the doping concentration and optimize the bulk electric field of the SJ. This paper firstly summarizes the development of the SJ, and then the optimization theory of the SJ is discussed for both the vertical and the lateral devices, including the non-full depletion mode, the minimum specific on-resistance optimization method and the equivalent substrate model. The SJ concept breaks the conventional " silicon limit” relationship of R on∝V B 2.5, showing a quasi-linear relationship of R on∝V B 1.03.

  18. Polarization transfer in (p,n) reactions at 495 MeV

    International Nuclear Information System (INIS)

    Taddeucci, T.N.

    1991-01-01

    Polarization transfer observables have been measured with the NTOF facility at LAMPF for (p,n) reactions at 495 MeV. Measurements of the longitudinal polarization transfer parameter D LL for transitions to discrete states at 0 degrees show convincing evidence for tensor interaction effects. Complete sets of polarization transfer observables have been measured for quasifree (p,n) reactions on 2 H, 12 C, 40 Ca at a scattering angle of 18 degrees. These measurements show no evidence for an enhancement in the isovector spin longitudinal response. 19 refs., 10 figs

  19. Forward voltage short-pulse technique for measuring high power laser array junction temperature

    Science.gov (United States)

    Meadows, Byron L. (Inventor); Amzajerdian, Frazin (Inventor); Barnes, Bruce W. (Inventor); Baker, Nathaniel R. (Inventor)

    2012-01-01

    The present invention relates to a method of measuring the temperature of the P-N junction within the light-emitting region of a quasi-continuous-wave or pulsed semiconductor laser diode device. A series of relatively short and low current monitor pulses are applied to the laser diode in the period between the main drive current pulses necessary to cause the semiconductor to lase. At the sufficiently low current level of the monitor pulses, the laser diode device does not lase and behaves similar to an electronic diode. The voltage across the laser diode resulting from each of these low current monitor pulses is measured with a high degree of precision. The junction temperature is then determined from the measured junction voltage using their known linear relationship.

  20. Gamow-Teller matrix elements from 00 ( p,n) cross section

    International Nuclear Information System (INIS)

    Goodman, C.D.; Goulding, C.A.; Greenfield, M.B.; Rapaport, J.; Bainum, D.E.; Foster, C.C.; Love, W.G.; Petrovich, F.

    1980-01-01

    After simple corrections for distortion effects, 120-MeV, 0 0 (p,n) cross sections are found to be proportional to the squares of the corresponding Fermi and Gamow-Teller matrix elements extracted from β-decay measurements. It is suggested that this proportionality can be used to extract Gamow-Teller matrix elements for transitions inaccessible to β decay

  1. Sequences of measures on atomic subalgebras of P(N) | Aizpuru ...

    African Journals Online (AJOL)

    Sequences of measures on atomic subalgebras of P(N). Antonio Aizpuru, Antonio Gutierrez-D´avila. Abstract. A vector form of Phillips' theorem, for atomic Boolean algebras with countably many atoms, is given. As a consequence we obtain a new characterization of weak compact sets of σ-additive measures. Quaestiones ...

  2. Iodine (p,n) and (d,2n) excitation function measurements

    International Nuclear Information System (INIS)

    West, H.I. Jr.; Nuckolls, R.M.; Mustafa, M.G.; Lanier, R.G.

    1991-01-01

    We have measured the nuclear excitation functions for the reactions 127 I (p,n) 127 Xe and 127 I(d,2n) 127 Xe. These results are being used in the interpretation of data obtained from nuclear test diagnostics. 15 refs., 3 figs., 3 tabs

  3. Comparison of polarization and analysing power for the 9Be(p,n)9B reaction

    International Nuclear Information System (INIS)

    Byrd, R.C.; Lisowski, P.W.; Tornow, W.; Walter, R.L.

    1983-01-01

    A recent Lane model of the 9 Be + nucleon system raised the question of differences between the polarization P(THETA) and the analyzing power A(THETA) in (p, n) reactions between mirror nuclei. Since these two observables are identical under exact charge symmetry, observation of a difference would indicate the breaking of this symmetry, probably by the Coulomb interaction. This paper describes the techniques for measurements of P(THETA) and A(THETA) in (p, n) reactions, with an emphasis on the elimination of systematic errors and the determination of background contributions. Measurements of both observables were made for the 9 Be(p, n 0 ) 9 B reaction at several angles for energies from 3 to 10 MeV. The results are combined with previous measurements to develop data sets for a comprehensive comparison of P(THETA) and A(THETA). Previous A(THETA) values agree well with the present measurements, while most of the earlier P(THETA) data are shown to be in error. Our data show that there do exist sizeable differences between P(THETA) and A(THETA) at energies from Esub(p) = 5-7 MeV. The existence of such differences in light nuclear systems is consistent with recent shell-model calculations for the 11 B(p, n 0 ) 11 C reaction. (orig.)

  4. Low energy 7Li(p,n)7Be neutron source (CANUTRON)

    International Nuclear Information System (INIS)

    Lone, M.A.; Ross, A.M.; Fraser, J.S.; Schriber, S.O.; Kushneriuk, S.A.; Selander, W.N.

    1982-04-01

    Characteristics of a neutron source based on the 7 Li(p,n) reaction at 2.5 MeV are investigated. It is shosn that with a 10-50 mA beam current this reaction provides a useful source for neutron radiography and other industrial applications

  5. Gamma rays from the 31P(n, γ)32P reaction

    NARCIS (Netherlands)

    Middelkoop, G. van

    1967-01-01

    The 31P(n, γ)32P reaction is studied with a 5 cm3 Ge(Li) counter. Altogether, 54 γ-rays are detected with experimental energy errors between 0.4 and 3.0 keV. The Q-value of the reaction is determined as Q = 7936.8±0.8 keV.

  6. The 2H(e, e' p)n reaction at large energy transfers

    NARCIS (Netherlands)

    Willering, Hendrik Willem

    2003-01-01

    At the ELSA accelerator facillity in Bonn, Germany, we have measured the deutron "breakup" reaction 2H(e,e' p)n at four-momentum transfers around Q2 = -0 .20(GeV/c)2 with an electron beam energy of E0 = 1.6 GeV. The cross section has been determined for energy transfers extending from the

  7. Effects of multiple substitution upon the P...N noncovalent interaction

    International Nuclear Information System (INIS)

    Scheiner, Steve

    2011-01-01

    Graphical abstract: The presence of one halogen opposite the N results in strong attraction between P and N. This force is little affected by identity of Y atoms, whether H or halogen. Highlights: → Strong attractive force directly between trivalent P and N atoms. → P...N force is unlike H-bonds or halogen bonds, but stronger than both. → Multiple halogenation beyond a single atom on P slightly weakens the interaction. - Abstract: The attractive noncovalent interaction of a P atom with N is derived primarily from two sources. Charge transfer from the N lone pair into the σ * antibonding orbital of a P-X bond that is turned away from the N atom combines with attractive Coulombic forces. As in the case of H-bonding, which is parallel in some ways to P...N attraction, placement of an electron-withdrawing substituent on the P atom enhances both of these components, and strengthens the overall interaction. However, in stark contrast with H-bonding, halogenation beyond monosubstitution does not lead to any further strengthening of the P...N noncovalent bond. Indeed, di and tri-substitution lead to small reductions in the interaction energy. In all cases, the geometry which contains a P...N bond is more stable than other candidate structures, some of which contain hydrogen or halogen bonds.

  8. Pharmacological Studies of p, N-(3, 4-Methylenedioxy phenyl Benzoic Acid (RRL-1364 - Part-I

    Directory of Open Access Journals (Sweden)

    Dahanukar Sharadini

    1978-01-01

    Full Text Available Detailed pharmacological investigations of p-N-(3, 4-methylene dioxy phenyl benzoic acid revealed marked hypotensive action which was dose dependent and most marked in cats; it was absent in rats. Atropine could block this hypotensive action, thus suggest-ing cholinomimetic mechanism. Further studies indicated that the hypotension produced was central and possibly medullary in origin.

  9. Towards ferromagnet/superconductor junctions on graphene

    International Nuclear Information System (INIS)

    Pakkayil, Shijin Babu

    2015-01-01

    to contact graphene or any other semiconductor with a ferromagnet has to overcome one important problem known as ''Conductance mismatch''. To solve the conductance mismatch problem, which had stalled the injection of spin polarised electrons to a semiconductor for many years, in our fabrication method, a thin Al 2 O 3 layer is introduced between the ferromagnet and graphene. The insulating layer is grown using Atomic layer deposition (ALD) with the help of a thin Ti seed layer. Unlike the previously reported method, which treats the entire graphene flake with PTCA (3,4,9,10-perylene tetracarboxylic acid) prior to the ALD process, no such chemical treatment occurs in our fabrication process. Also, the yield of successful devices are higher than the highest yield reported so far (∝30%). The later part of the thesis discusses how this fabrication recipe is further developed to contact graphene with superconducting contacts to produce ferromagnet/superconductor junctions on graphene. The successful spin valve devices produced using the new fabrication process are discussed along with a simple theory of spin transport in graphene. Some of the spin valve devices discussed are fabricated with the help of Ti seed layer (for growing Al 2 O 3 ) and some of them are without. Also, measurement results on devices with varying number of ALD cycles are shown and discussed which helps to decide the optimum number of ALD cycles needed for the best yield and performance. The devices made using Ti seed layer shows better consistency in terms of contact resistances and device performance. Also, ferromagnetic contacts from one device showed perfect tunnel barrier behaviour. Chapter 5 mainly discusses the results of the measurements done on a device which has 4 ferromagnetic contacts and 4 superconducting contacts arranged in a fashion that it forms multiple ferromagnet/superconductor junctions on graphene. Lateral spin valves and Josephson junctions are also part of

  10. Towards ferromagnet/superconductor junctions on graphene

    Energy Technology Data Exchange (ETDEWEB)

    Pakkayil, Shijin Babu

    2015-07-01

    to contact graphene or any other semiconductor with a ferromagnet has to overcome one important problem known as ''Conductance mismatch''. To solve the conductance mismatch problem, which had stalled the injection of spin polarised electrons to a semiconductor for many years, in our fabrication method, a thin Al{sub 2}O{sub 3} layer is introduced between the ferromagnet and graphene. The insulating layer is grown using Atomic layer deposition (ALD) with the help of a thin Ti seed layer. Unlike the previously reported method, which treats the entire graphene flake with PTCA (3,4,9,10-perylene tetracarboxylic acid) prior to the ALD process, no such chemical treatment occurs in our fabrication process. Also, the yield of successful devices are higher than the highest yield reported so far (∝30%). The later part of the thesis discusses how this fabrication recipe is further developed to contact graphene with superconducting contacts to produce ferromagnet/superconductor junctions on graphene. The successful spin valve devices produced using the new fabrication process are discussed along with a simple theory of spin transport in graphene. Some of the spin valve devices discussed are fabricated with the help of Ti seed layer (for growing Al{sub 2}O{sub 3}) and some of them are without. Also, measurement results on devices with varying number of ALD cycles are shown and discussed which helps to decide the optimum number of ALD cycles needed for the best yield and performance. The devices made using Ti seed layer shows better consistency in terms of contact resistances and device performance. Also, ferromagnetic contacts from one device showed perfect tunnel barrier behaviour. Chapter 5 mainly discusses the results of the measurements done on a device which has 4 ferromagnetic contacts and 4 superconducting contacts arranged in a fashion that it forms multiple ferromagnet/superconductor junctions on graphene. Lateral spin valves and Josephson junctions

  11. Transport properties of molecular junctions

    CERN Document Server

    Zimbovskaya, Natalya A

    2013-01-01

    A comprehensive overview of the physical mechanisms that control electron transport and the characteristics of metal-molecule-metal (MMM) junctions is presented. As far as possible, methods and formalisms presented elsewhere to analyze electron transport through molecules are avoided. This title introduces basic concepts—a description of the electron transport through molecular junctions—and briefly describes relevant experimental methods. Theoretical methods commonly used to analyze the electron transport through molecules are presented. Various effects that manifest in the electron transport through MMMs, as well as the basics of density-functional theory and its applications to electronic structure calculations in molecules are presented. Nanoelectronic applications of molecular junctions and similar systems are discussed as well. Molecular electronics is a diverse and rapidly growing field. Transport Properties of Molecular Junctions presents an up-to-date survey of the field suitable for researchers ...

  12. NbN tunnel junctions

    International Nuclear Information System (INIS)

    Villegier, J.C.; Vieux-Rochaz, L.; Goniche, M.; Renard, P.; Vabre, M.

    1984-09-01

    All-niobium nitride Josephon junctions have been prepared successfully using a new processing called SNOP: Selective Niobium (nitride) Overlap Process. Such a process involves the ''trilayer'' deposition on the whole wafer before selective patterning of the electrodes by optically controlled dry reactive ion etching. Only two photomask levels are need to define an ''overlap'' or a ''cross-type'' junction with a good accuracy. The properties of the niobium nitride films deposited by DC-magnetron sputtering and the surface oxide growth are analysed. The most critical point to obtain high quality and high gap value junctions resides in the early stage of the NbN counterelectrode growth. Some possibilities to overcome such a handicap exist even if the fabrication needs substrate temperatures below 250 0 C

  13. Coincidence of features of emitted THz electromagnetic wave power form a single Josephson junction and different current components

    Science.gov (United States)

    Hamdipour, Mohammad

    2017-12-01

    By applying a voltage to a Josephson junction, the charge in superconducting layers (S-layers) will oscillate. Wavelength of the charge oscillations in S-layers is related to external current in junction, by increasing the external current, the wavelength will decrease which cause in some currents the wavelength be incommensurate with width of junction, so the CVC shows Fiske like steps. External current throwing along junction has some components, resistive, capacitive and superconducting current, beside these currents there is a current in lateral direction of junction, (x direction). On the other hand, the emitted electromagnetic wave power in THz region is related to AC component of electric field in junction, which itself is related to charge density in S-layers, which is related to currents in the system. So we expect that features of variation of current components reflect the features of emitted THz power form junction. Here we study in detail the superconductive current in a long Josephson junction (JJ), the current voltage characteristics (CVC) of junction and emitted THz power from the system. Then we compare the results. Comparing the results we see that there is a good qualitative coincidence in features of emitted THz power and supercurrent in junction.

  14. Gravitation at the Josephson Junction

    Directory of Open Access Journals (Sweden)

    Victor Atanasov

    2018-01-01

    Full Text Available A geometric potential from the kinetic term of a constrained to a curved hyperplane of space-time quantum superconducting condensate is derived. An energy conservation relation involving the geometric field at every material point in the superconductor is demonstrated. At a Josephson junction the energy conservation relation implies the possibility of transforming electric energy into geometric field energy, that is, curvature of space-time. Experimental procedures to verify that the Josephson junction can act as a voltage-to-curvature converter are discussed.

  15. The Outcome for Patients With Pathologic Node-Positive Prostate Cancer Treated With Intensity Modulated Radiation Therapy and Androgen Deprivation Therapy: A Case-Matched Analysis of pN1 and pN0 Patients

    Energy Technology Data Exchange (ETDEWEB)

    Van Hemelryk, Annelies [Department of Urology, Ghent University Hospital, Ghent (Belgium); De Meerleer, Gert; Ost, Piet [Department of Radiation Oncology, Ghent University Hospital, Ghent (Belgium); Poelaert, Filip [Department of Urology, Ghent University Hospital, Ghent (Belgium); De Gersem, Werner [Department of Radiation Oncology, Ghent University Hospital, Ghent (Belgium); Decaestecker, Karel [Department of Urology, Ghent University Hospital, Ghent (Belgium); De Visschere, Pieter [Department of Radiology, Ghent University Hospital, Ghent (Belgium); Fonteyne, Valérie, E-mail: valerie.fonteyne@uzgent.be [Department of Radiation Oncology, Ghent University Hospital, Ghent (Belgium)

    2016-10-01

    Purpose: Improved outcome is reported after surgery or external beam radiation therapy (EBRT) plus androgen deprivation therapy (ADT) for patients with lymph node (LN) positive (N1) prostate cancer (PC). Surgical series have shown that pathologic (p)N1 PC does not behave the same in all patients. The aim of this study was to perform a matched-case analysis to compare the outcome of pN1 and pN0 PC after high-dose EBRT plus ADT. Methods and Materials: Radiation therapy up to 80 Gy was delivered to the prostate with a minimal dose of 45 Gy to the pelvis for pN1 patients. After matching, Kaplan-Meier statistics were used to compare the 5-year biochemical and clinical relapse-free survival (bRFS and cRFS), prostate cancer–specific survival (PCSS), and overall survival (OS). Acute and late rectal and urinary toxicity was evaluated. Results: Sixty-nine pN1 PC patients were matched 1:1 with pN0 PC patients. The median follow-up time was 60 months. The 5-year bRFS and cRFS for pN1 versus pN0 PC patients were 65% ± 7% versus 79% ± 5% (P=.08) and 70% ± 6% versus 83% ± 5% (P=.04) respectively. No significant difference was found in bRFS or cRFS rates between low volume pN1 (≤2 positive LNs) and pN0 patients. The 5-year PCSS and OS were comparable between pN1 and pN0 PC patients: PCSS: 92% ± 4% versus 93% ± 3% (P=.66); OS: 82% ± 5% versus 80% ± 5% (P=.58). Severe toxicity was rare for both groups, although pN1 patients experienced significantly more acute grade 2 rectal toxicity. Conclusion: Primary EBRT plus 2 to 3 years of ADT is a legitimate treatment option for pN1 PC patients, especially those with ≤2 positive LNs, and this with bRFS and cRFS rates comparable to those in pN0 PC patients. For pN1 PC patients with >2 positive LNs, bRFS and cRFS are worse than in pN0 patients, but even in this subgroup, long-term disease control is obtained.

  16. The Outcome for Patients With Pathologic Node-Positive Prostate Cancer Treated With Intensity Modulated Radiation Therapy and Androgen Deprivation Therapy: A Case-Matched Analysis of pN1 and pN0 Patients

    International Nuclear Information System (INIS)

    Van Hemelryk, Annelies; De Meerleer, Gert; Ost, Piet; Poelaert, Filip; De Gersem, Werner; Decaestecker, Karel; De Visschere, Pieter; Fonteyne, Valérie

    2016-01-01

    Purpose: Improved outcome is reported after surgery or external beam radiation therapy (EBRT) plus androgen deprivation therapy (ADT) for patients with lymph node (LN) positive (N1) prostate cancer (PC). Surgical series have shown that pathologic (p)N1 PC does not behave the same in all patients. The aim of this study was to perform a matched-case analysis to compare the outcome of pN1 and pN0 PC after high-dose EBRT plus ADT. Methods and Materials: Radiation therapy up to 80 Gy was delivered to the prostate with a minimal dose of 45 Gy to the pelvis for pN1 patients. After matching, Kaplan-Meier statistics were used to compare the 5-year biochemical and clinical relapse-free survival (bRFS and cRFS), prostate cancer–specific survival (PCSS), and overall survival (OS). Acute and late rectal and urinary toxicity was evaluated. Results: Sixty-nine pN1 PC patients were matched 1:1 with pN0 PC patients. The median follow-up time was 60 months. The 5-year bRFS and cRFS for pN1 versus pN0 PC patients were 65% ± 7% versus 79% ± 5% (P=.08) and 70% ± 6% versus 83% ± 5% (P=.04) respectively. No significant difference was found in bRFS or cRFS rates between low volume pN1 (≤2 positive LNs) and pN0 patients. The 5-year PCSS and OS were comparable between pN1 and pN0 PC patients: PCSS: 92% ± 4% versus 93% ± 3% (P=.66); OS: 82% ± 5% versus 80% ± 5% (P=.58). Severe toxicity was rare for both groups, although pN1 patients experienced significantly more acute grade 2 rectal toxicity. Conclusion: Primary EBRT plus 2 to 3 years of ADT is a legitimate treatment option for pN1 PC patients, especially those with ≤2 positive LNs, and this with bRFS and cRFS rates comparable to those in pN0 PC patients. For pN1 PC patients with >2 positive LNs, bRFS and cRFS are worse than in pN0 patients, but even in this subgroup, long-term disease control is obtained.

  17. Electrochemical preparation of vertically aligned, hollow CdSe nanotubes and their p-n junction hybrids with electrodeposited Cu2O.

    Science.gov (United States)

    Debgupta, Joyashish; Devarapalli, Ramireddy; Rahman, Shakeelur; Shelke, Manjusha V; Pillai, Vijayamohanan K

    2014-08-07

    Vertically aligned, hollow nanotubes of CdSe are grown on fluorine doped tin oxide (FTO) coated glass substrates by ZnO nanowire template-assisted electrodeposition technique, followed by selective removal of the ZnO core using NH4OH. A detailed mechanism of nucleation and anisotropic growth kinetics of nanotubes have been studied by a combination of characterization tools such as chronoamperometry, SEM and TEM. Interestingly, "as grown" CdSe nanotubes (CdSe NTs) on FTO coated glass plates behave as n-type semiconductors exhibiting an excellent photo-response (with a generated photocurrent density value of ∼ 470 μA cm(-2)) while in contact with p-type Cu2O (p-type semiconductor, grown separately on FTO plates) because of the formation of a n-p heterojunction (type II). The observed photoresponse is 3 times higher than that of a similar device prepared with electrodeposited CdSe films (not nanotubes) and Cu2O on FTO. This has been attributed to the hollow 1-D nature of CdSe NTs, which provides enhanced inner and outer surface areas for better absorption of light and also assists faster transport of photogenerated charge carriers.

  18. Preparation of Improved p-n Junction NiO/TiO2 Nanotubes for Solar-Energy-Driven Light Photocatalysis

    Directory of Open Access Journals (Sweden)

    Lan Ching Sim

    2013-01-01

    Full Text Available Self-organized TiO2 nanotubes (TNTs with average inner diameter of 109 nm, wall thickness of 15 nm, and tube length of 7–10 μm were loaded with nickel oxide (NiO nanoparticles via incipient wet impregnation method. The molar concentration of Ni(NO32·6H2O aqueous solution varied in a range of 0.5 M–2.5 M. The samples were characterized for crystalline phase, morphology, topography, chemical composition, Raman shift, and UV-Vis diffusion reflection properties. The finding shows that the loading of NiO did not influence the morphology, structure, and crystalline phase of TNTs but it exhibited significant effect on crystallite size and optical absorption properties. Further, the solar-energy-driven the photocatalytic activity of NiO/TNTs and pure TNTs was evaluated by degrading methylene blue (MB. The results confirm that photocatalytic efficiency of NiO/TNTs is higher than that of TNTs.

  19. Boron Profile Sharpening in Ultra-Shallow p+-n Junction Produced by Plasma Immersion Ion Implantation from BF3 Plasma

    International Nuclear Information System (INIS)

    Lukichev, V.; Rudenko, K.; Orlikovsky, A.; Pustovit, A.; Vyatkin, A.

    2008-01-01

    We have investigated plasma immersion ion implantation (PI 3 ) of boron with energies of 500 eV (doses up to 2x10 15 cm -2 ) from BF 3 plasma with He pre-amorphizing implantation (PAI)(energy 3 keV, dose 5x10 16 cm -2 ). Implanted samples were subjected to RTA (T = 900 to 1050 deg. C, t = 2 to 24 sec and spike anneal). SIMS analysis of boron profiles revealed its anomalous behavior. For short RTA times the profile tail (below 5x10 19 cm -3 ) moves toward the surface and then, as in the usual diffusion, toward the bulk at longer annealing times.

  20. Hybrid Organic/ZnO p-n Junctions with n-Type ZnO Grown by Atomic Layer Deposition

    Science.gov (United States)

    Łuka, G.; Krajewski, T.; Szczerbakow, A.; Łusakowska, E.; Kopalko, K.; Guziewicz, E.; Wachnicki, Ł.; Szczepanik, A.; Godlewski, M.; Fidelus, J. D.

    2008-11-01

    We report on fabrication of hybrid inorganic-on-organic thin film structures with polycrystalline zinc oxide films grown by atomic layer deposition technique. ZnO films were deposited on two kinds of thin organic films, i.e. pentacene and poly(dimethylosiloxane) elastomer with a carbon nanotube content (PDMS:CNT). Surface morphology as well as electrical measurements of the films and devices were analyzed. The current density versus voltage (I-V) characteristics of ITO/pentacene/ZnO/Au structure show a low-voltage switching phenomenon typical of organic memory elements. The I-V studies of ITO/PDMS:CNT/ZnO/Au structure indicate some charging effects in the system under applied voltages.

  1. Numerical simulation of electron-beam-induced current near a silicon grain boundary and impact of a p-n junction space charge region

    Energy Technology Data Exchange (ETDEWEB)

    Corkish, R.; Altermatt, P.P.; Heiser, G. [Photovoltaics Special Research Centre, University of New South Wales, 2052 Sydney (Australia)

    2001-01-01

    Three-dimensional numerical simulations of electron-beam-induced current (EBIC) near a vertical silicon grain boundary are demonstrated. They are compared with an analytical model which excludes the effect of carrier generation other than in the bulk base region of a solar cell structure. We demonstrate that in a wide range of solar cell structures recombination in the space charge region (SCR) significantly affects the EBIC results and hence needs to be included in the data evaluation. Apart from these findings, simulations of a realistic silicon solar cell structure (thick emitter, field-dependent mobility, etc.) are demonstrated.

  2. Photo-Electrical Characterization of Silicon Micropillar Arrays with Radial p/n Junctions Containing Passivation and Anti-Reflection Coatings

    NARCIS (Netherlands)

    Vijselaar, Wouter; Elbersen, R.; Tiggelaar, Roald M.; Gardeniers, Han; Huskens, Jurriaan

    2017-01-01

    In order to assess the contributions of anti-reflective and passivation effects in microstructured silicon-based solar light harvesting devices, thin layers of aluminum oxide (Al2O3), silicon dioxide (SiO2), silicon-rich silicon nitride (SiNx), and indium tin oxide (ITO), with a thickness ranging

  3. Laparoscopic approach to ureteropelvic junction obstruction in a bifid pelvis

    Directory of Open Access Journals (Sweden)

    Lessandro Curcio

    2013-06-01

    Full Text Available Objective About 10% of renal pelvis are bifids and not so there is a larger index of kidney disease over the normal pelves. The laparoscopy and minimally invasive techniques treat the ureteropelvic junction disease in a low agressive manner. We showed a video of an atypical pyeloplasty of ureteropelvic junction obstruction of a lower unit. The patient is a 33 year-old woman with an intermitent lumbar pain for 3 years. Your image exams showed a bifid left pelvis with a stenosis of the lower unit. We chose to do the fix of this pathology laparoscopically. Materials and Methods We positioned the patient in a right lateral decubitus and 3 trocars was placed, we identify the obstructed junction and a terminolateral anastomosis was performed. Results: The procedure lasted 95 minutes, with little blood loss and the patient was discharged in 2 days. We withdraw the double J catheter after 1 month, a pyelography and a ureteroscopy was performed which showed a pervious anastomosis. After 2 months of follow-up the patient is doing well. Conclusions As far as we know, this is the first case of literature with correction by laparoscopy. The stenosis of ureteropelvic junction in the lower unit of a bifid pelvis can be corrected effectively by laparoscopic surgery.

  4. Laparoscopic approach to ureteropelvic junction obstruction in a bifid pelvis.

    Science.gov (United States)

    Curcio, Lessandro; Ahouagi, Antonio Claudio; Renteria, Juan; Araujo, Igor Rui; Presto, Daniel

    2013-01-01

    About 10% of renal pelvis are bifids and not so there is a larger index of kidney disease over the normal pelves. The laparoscopy and minimally invasive techniques treat the ureteropelvic junction disease in a low agressive manner. We showed a video of an atypical pyeloplasty of ureteropelvic junction obstruction of a lower unit. The patient is a 33 year-old woman with an intermitent lumbar pain for 3 years. Your image exams showed a bifid left pelvis with a stenosis of the lower unit. We chose to do the fix of this pathology laparoscopically. We positioned the patient in a right lateral decubitus and 3 trocars was placed, we identify the obstructed junction and a terminolateral anastomosis was performed. The procedure lasted 95 minutes, with little blood loss and the patient was discharged in 2 days. We withdraw the double J catheter after 1 month, a pyelography and a ureteroscopy was performed which showed a pervious anastomosis. After 2 months of follow-up the patient is doing well. As far as we know, this is the first case of literature with correction by laparoscopy. The stenosis of ureteropelvic junction in the lower unit of a bifid pelvis can be corrected effectively by laparoscopic surgery.

  5. Electronic noise of superconducting tunnel junction detectors

    International Nuclear Information System (INIS)

    Jochum, J.; Kraus, H.; Gutsche, M.; Kemmather, B.; Feilitzsch, F. v.; Moessbauer, R.L.

    1994-01-01

    The optimal signal to noise ratio for detectors based on superconducting tunnel junctions is calculated and compared for the cases of a detector consisting of one single tunnel junction, as well as of series and of parallel connections of such tunnel junctions. The influence of 1 / f noise and its dependence on the dynamical resistance of tunnel junctions is discussed quantitatively. A single tunnel junction yields the minimum equivalent noise charge. Such a tunnel junction exhibits the best signal to noise ratio if the signal charge is independent of detector size. In case, signal charge increases with detector size, a parallel or a series connection of tunnel junctions would provide the optimum signal to noise ratio. The equivalent noise charge and the respective signal to noise ratio are deduced as functions of tunnel junction parameters such as tunneling time, quasiparticle lifetime, etc. (orig.)

  6. Ultrastructure and regulation of lateralized connexin43 in the failing heart.

    Science.gov (United States)

    Hesketh, Geoffrey G; Shah, Manish H; Halperin, Victoria L; Cooke, Carol A; Akar, Fadi G; Yen, Timothy E; Kass, David A; Machamer, Carolyn E; Van Eyk, Jennifer E; Tomaselli, Gordon F

    2010-04-02

    Gap junctions mediate cell-to-cell electric coupling of cardiomyocytes. The primary gap junction protein in the working myocardium, connexin43 (Cx43), exhibits increased localization at the lateral membranes of cardiomyocytes in a variety of heart diseases, although the precise location and function of this population is unknown. To define the subcellular location of lateralized gap junctions at the light and electron microscopic level, and further characterize the biochemical regulation of gap junction turnover. By electron microscopy, we characterized gap junctions formed between cardiomyocyte lateral membranes in failing canine ventricular myocardium. These gap junctions were varied in structure and appeared to be extensively internalizing. Internalized gap junctions were incorporated into multilamellar membrane structures, with features characteristic of autophagosomes. Intracellular Cx43 extensively colocalized with the autophagosome marker GFP-LC3 when both proteins were exogenously expressed in HeLa cells, and endogenous Cx43 colocalized with GFP-LC3 in neonatal rat ventricular myocytes. Furthermore, a distinct phosphorylated form of Cx43, as well as the autophagosome-targeted form of LC3 (microtubule-associated protein light chain 3) targeted to lipid rafts in cardiac tissue, and both were increased in heart failure. Our data demonstrate a previously unrecognized pathway of gap junction internalization and degradation in the heart and identify a cellular pathway with potential therapeutic implications.

  7. Preparation of TNAs/NiO p-n heterojunction and their applications in UV photosensor

    Science.gov (United States)

    Yusoff, M. M.; Mamat, M. H.; Malek, M. F.; Abdullah, M. A. R.; Ismail, A. S.; Saidi, S. A.; Mohamed, R.; Suriani, A. B.; Khusaimi, Z.; Rusop, M.

    2018-05-01

    A nanocomposite consisted of n-type titanium dioxide (TiO2) nanorod arrays (TNAs) and p-type nickel oxide (NiO) were deposited using a novel facile low-temperature aqueous chemical route (ACR) in a Schott bottle with cap clamps and sol-gel spin coating method, respectively on a transparent conductive oxide (TCO) glass substrate for the application of ultraviolet (UV) photosensor. The p-n heterojunction photosensor exhibited an increase in photocurrent under UV light (365 nm, 750 µW/cm2) at applied reverse bias. The measured UV response also revealed an increase in photocurrent, and dark current with increasing applied reverse bias on the p-n heterojunction. In this study, the fabricated TNAs/NiO composite nanostructures showed potential applications for photosensor based on the steady photocurrent results obtained under UV irradiation

  8. Suppression of the stellar enhancement factor and the reaction 85Rb(p,n)85Sr

    International Nuclear Information System (INIS)

    Rauscher, T.; Kiss, G. G.; Gyuerky, Gy.; Simon, A.; Fueloep, Zs.; Somorjai, E.

    2009-01-01

    It is shown that a Coulomb suppression of the stellar enhancement factor occurs in many endothermic reactions at and far from stability. Contrary to common assumptions, reaction measurements for astrophysics with minimal impact of stellar enhancement should be preferably performed for those reactions instead of their reverses, despite of their negative Q value. As a demonstration, the cross section of the astrophysically relevant 85 Rb(p,n) 85 Sr reaction has been measured by activation between 2.16≤E c.m. ≤3.96 MeV and the astrophysical reaction rates at p process temperatures for (p,n) as well as (n,p) are directly inferred from the data. Additionally, our results confirm a previously derived modification of a global optical proton potential. The presented arguments are also relevant for other α- and proton-induced reactions in the p, rp, and νp processes.

  9. Cross sections for the (n,p), (n,α) and (n,2n) threshold reactions

    International Nuclear Information System (INIS)

    Bychkov, V.M.; Manokhin, V.N.; Pashchenko, A.B.; Plyaskin, V.I.

    1980-07-01

    The (n,p), (n,α), (n,2n) threshold reactions are reviewed for nuclei with Z>=20 in the neutron energy range from the threshold up to 20MeV. The review consists of four parts. In the first part the theoretical methods of cross-section calculations and the empirical or semi-empirical systematics are considered. In the second, third and fourth parts the experimental data compilations on the (n,p), (n,α) and (n,2n) excitation functions are given. The recommended values of cross-sections at 14.5MeV neutron energy are given in tables. For some isotopes the recommended curves of excitation functions also are given in graphs. (author)

  10. P-N defect in GaNP studied by optically detected magnetic resonance

    International Nuclear Information System (INIS)

    Chen, W.M.; Thinh, N.Q.; Vorona, I.P.; Buyanova, I.A.; Xin, H.P.; Tu, C.W.

    2003-01-01

    We provide experimental evidence for an intrinsic defect in GaNP from optically detected magnetic resonance (ODMR). This defect is identified as a P-N complex, exhibiting hyperfine structure due to interactions with a nuclear spin I=((1)/(2)) of one P atom and also a nuclear spin I=1 due to one N atom. The introduction of the defect is assisted by the incorporation of N within the studied N composition range of up to 3.1%, under non-equilibrium growth conditions during gas-source molecular beam epitaxy. The corresponding ODMR spectrum was found to be isotropic, suggesting an A 1 symmetry of the defect state. The localization of the electron wave function at the P-N defect in GaNP is found to be even stronger than that for the isolated P Ga antisite in its parent binary compound GaP

  11. Revisiting the 7Li(p,n)7Be reaction near threshold

    International Nuclear Information System (INIS)

    Herrera, María S.; Moreno, Gustavo A.; Kreiner, Andrés J.

    2014-01-01

    In this work we review all the available experimental neutron data for the 7 Li(p,n) reaction near threshold which is necessary to obtain an accurate source model for Monte Carlo simulations in Boron Neutron Capture Therapy. Scattered published experimental results such as cross sections, differential neutron yields and total yields were collected and analyzed, exploring the sensitivity of the fitting parameters to the different possible variables and deriving a consistent working set of parameters to evaluate the neutron source near threshold. - Highlights: • We review neutron experimental data for the 7 Li(p,n) reaction near threshold. • A new computational method was used to study all the available published data. • A consistent description of the neutron source was derived fitting the available data. • We found that the neutron yield at 0° studied by Kononov is the most sensitive curve. • A consistent set of parameters to parametrize the Breit–Wigner formula is presented

  12. New method to evaluate the 7Li(p, n)7Be reaction near threshold

    International Nuclear Information System (INIS)

    Herrera, María S.; Moreno, Gustavo A.; Kreiner, Andrés J.

    2015-01-01

    In this work a complete description of the 7 Li(p, n) 7 Be reaction near threshold is given using center-of-mass and relative coordinates. It is shown that this standard approach, not used before in this context, leads to a simple mathematical representation which gives easy access to all relevant quantities in the reaction and allows a precise numerical implementation. It also allows in a simple way to include proton beam-energy spread affects. The method, implemented as a C++ code, was validated both with numerical and experimental data finding a good agreement. This tool is also used here to analyze scattered published measurements such as (p, n) cross sections, differential and total neutron yields for thick targets. Using these data we derive a consistent set of parameters to evaluate neutron production near threshold. Sensitivity of the results to data uncertainty and the possibility of incorporating new measurements are also discussed

  13. (p,n) and (n,p) reactions as probes of isovector giant monopole resonances

    International Nuclear Information System (INIS)

    Auerbach, N.; Bowman, J.D.; Franey, M.A.; Love, W.G.

    1983-01-01

    Nucleon charge exchange reactions are explored as prospective probes of isovector giant monopole resonances. Using charge exchange transition densities based on random-phase approximation sum rules, distorted wave impulse approximation calculations are made for the (p,n) and (n,p) reactions exciting the isovector giant monopole resonances in several nuclei at bombarding energies of 120 and 800 MeV. Based on our calculations, the charge exchange reactions at 800 MeV appear more promising

  14. N/sub p/.N/sub n/ systematics and their implications

    International Nuclear Information System (INIS)

    Casten, R.F.

    1985-01-01

    A substantial simplification of the systematics in nuclear phase transition regions is obtained if the data are plotted against the product, N/sub p/.N/sub n/, of the number of valence protons and neutrons instead of against N, Z, or A as is usually done. Such a scheme leads to a unified view of nuclear transition regions and to a simplified scheme for collective model calculations. 7 refs., 5 figs

  15. Coherent pion production in 12C(p,nπ) at 800MeV

    International Nuclear Information System (INIS)

    Gilman, R.; Brash, E.; Edwards, G.; Glashausser, C.; Jones, M.K.; Baker, F.T.; Bastea, S.; Beatty, D.P.; Bimbot, L.; Brusoe, J.; Chiba, J.; Cooper, D.; Kumbartzki, G.; Mauger, C.; Nagae, T.; Park, B.; Prout, D.; Ransome, R.D.; Rawool-Sullivan, M.; Rutt, P.; Storm, B.; Sugarbaker, E.; Taddeucci, T.; Zumbro, J.

    1994-01-01

    Studies of the production of the Δ resonance in hadronic charge exchange reactions show a shift in the Δ peak position. Measurements looking also at the Δ decay products give some evidence for coherent pion production. We have recently completed a new measurement of the 12 C(p,n) reaction leading to the Δ resonance, including a higher resolution coincidence measurement of decay π's in the forward direction. We describe the experiment and some aspects of the preliminary analysis. ((orig.))

  16. Quasielastic scattering using the (p,n) reaction at 795 MeV

    International Nuclear Information System (INIS)

    Prout, D.L.

    1992-08-01

    A survey in nuclear mass and in momentum transfer of cross sections and analyzing powers in the quasielastic region has been made using the (p,n) reaction. The measurements were performed at an energy of 795 MeV at the Neutron Time of Flight Facility and the Weapons Neutron Research line at LAMPF. The (p,n) reaction isolates the isovector (rvec τ 1 · rvec τ 2 ) part of the nucleon nucleus interaction. Standard models of quasielastic scattering were able to describe the magnitude and shape of the double differential cross sections very well if account was taken of a significant background from double scattering. In contrast, the quasielastic response was shifted to much higher excitation energy than what was expected. This was true for all nuclei at moderate to large momenta transfers. Neither the Coulomb energy shift nor RPA calculations with the standard particle hole (p-h) interactions could account for this large shift. The data argue for a repulsive interaction in both the transverse and longitudinal channels of the p-h interaction. A suppression of the quasielastic analyzing power compared to the free nucleon nucleon analyzing power was found in nat C at all the angles measured. The same region in nat Pb showed little or no suppression. Part of the suppression in the nat C data may be accounted for by relativistic models of the nucleus employing large vector and scalar potentials with an effective mass of .85 times the free nucleon mass. The relatively larger contribution of double scattering nat Pb(rvec p, n) than to nat C(rvec p, n) may account for the difference in analyzing power for these two targets in the quasielastic region

  17. Modeling pN2 through Geological Time: Implications for Planetary Climates and Atmospheric Biosignatures.

    Science.gov (United States)

    Stüeken, E E; Kipp, M A; Koehler, M C; Schwieterman, E W; Johnson, B; Buick, R

    2016-12-01

    Nitrogen is a major nutrient for all life on Earth and could plausibly play a similar role in extraterrestrial biospheres. The major reservoir of nitrogen at Earth's surface is atmospheric N 2 , but recent studies have proposed that the size of this reservoir may have fluctuated significantly over the course of Earth's history with particularly low levels in the Neoarchean-presumably as a result of biological activity. We used a biogeochemical box model to test which conditions are necessary to cause large swings in atmospheric N 2 pressure. Parameters for our model are constrained by observations of modern Earth and reconstructions of biomass burial and oxidative weathering in deep time. A 1-D climate model was used to model potential effects on atmospheric climate. In a second set of tests, we perturbed our box model to investigate which parameters have the greatest impact on the evolution of atmospheric pN 2 and consider possible implications for nitrogen cycling on other planets. Our results suggest that (a) a high rate of biomass burial would have been needed in the Archean to draw down atmospheric pN 2 to less than half modern levels, (b) the resulting effect on temperature could probably have been compensated by increasing solar luminosity and a mild increase in pCO 2 , and (c) atmospheric oxygenation could have initiated a stepwise pN 2 rebound through oxidative weathering. In general, life appears to be necessary for significant atmospheric pN 2 swings on Earth-like planets. Our results further support the idea that an exoplanetary atmosphere rich in both N 2 and O 2 is a signature of an oxygen-producing biosphere. Key Words: Biosignatures-Early Earth-Planetary atmospheres. Astrobiology 16, 949-963.

  18. Search for heavy pentaquark exotic baryons with hidden strangeness in the reactions p + N → (pφ) + N and p + N → [Λ(1520)K+] + N at Ep = 70 GeV

    International Nuclear Information System (INIS)

    Balatz, M.Ya.; Belyaev, I.M.; Dorofeev, V.A.

    1993-01-01

    In the experiments at the SPHINX facility on the 70 GeV proton beam of the IHEP accelerator a wide program of studying of the baryon diffractive production and search for exotic baryons in these processes is being carried out. The first data for the reactions p + N → (K + K - p) + N, p + N → (pφ) + N and p + N → [Λ(1520)K + ] + N are presented. The very sensitive upper limits for the cross sections for diffractive production of heavy narrow cryptoexotic baryon resonances with hidden strangeness in the mass region up to 4.5 GeV are obtained. 14 refs., 12 figs., 2 tabs

  19. Current noise in tunnel junctions

    Energy Technology Data Exchange (ETDEWEB)

    Frey, Moritz; Grabert, Hermann [Physikalisches Institut, Universitaet Freiburg, Hermann-Herder-Strasse 3, 79104, Freiburg (Germany)

    2017-06-15

    We study current fluctuations in tunnel junctions driven by a voltage source. The voltage is applied to the tunneling element via an impedance providing an electromagnetic environment of the junction. We use circuit theory to relate the fluctuations of the current flowing in the leads of the junction with the voltage fluctuations generated by the environmental impedance and the fluctuations of the tunneling current. The spectrum of current fluctuations is found to consist of three parts: a term arising from the environmental Johnson-Nyquist noise, a term due to the shot noise of the tunneling current and a third term describing the cross-correlation between these two noise sources. Our phenomenological theory reproduces previous results based on the Hamiltonian model for the dynamical Coulomb blockade and provides a simple understanding of the current fluctuation spectrum in terms of circuit theory and properties of the average current. Specific results are given for a tunnel junction driven through a resonator. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  20. Neutron Energy Spectra and Yields from the 7Li(p,n) Reaction for Nuclear Astrophysics

    Science.gov (United States)

    Tessler, M.; Friedman, M.; Schmidt, S.; Shor, A.; Berkovits, D.; Cohen, D.; Feinberg, G.; Fiebiger, S.; Krása, A.; Paul, M.; Plag, R.; Plompen, A.; Reifarth, R.

    2016-01-01

    Neutrons produced by the 7Li(p, n)7Be reaction close to threshold are widely used to measure the cross section of s-process nucleosynthesis reactions. While experiments have been performed so far with Van de Graaff accelerators, the use of RF accelerators with higher intensities is planned to enable investigations on radioactive isotopes. In parallel, high-power Li targets for the production of high-intensity neutrons at stellar energies are developed at Goethe University (Frankfurt, Germany) and SARAF (Soreq NRC, Israel). However, such setups pose severe challenges for the measurement of the proton beam intensity or the neutron fluence. In order to develop appropriate methods, we studied in detail the neutron energy distribution and intensity produced by the thick-target 7Li(p,n)7Be reaction and compared them to state-of- the-art simulation codes. Measurements were performed with the bunched and chopped proton beam at the Van de Graaff facility of the Institute for Reference Materials and Measurements (IRMM) using the time-of-flight (TOF) technique with thin (1/8") and thick (1") detectors. The importance of detailed simulations of the detector structure and geometry for the conversion of TOF to a neutron energy is stressed. The measured neutron spectra are consistent with those previously reported and agree well with Monte Carlo simulations that include experimentally determined 7Li(p,n) cross sections, two-body kinematics and proton energy loss in the Li-target.

  1. Stability of large-area molecular junctions

    NARCIS (Netherlands)

    Akkerman, Hylke B.; Kronemeijer, Auke J.; Harkema, Jan; van Hal, Paul A.; Smits, Edsger C. P.; de Leeuw, Dago M.; Blom, Paul W. M.

    The stability of molecular junctions is crucial for any application of molecular electronics. Degradation of molecular junctions when exposed to ambient conditions is regularly observed. In this report the stability of large-area molecular junctions under ambient conditions for more than two years

  2. Dynamics of pi-junction interferometer circuits

    DEFF Research Database (Denmark)

    Kornkev, V.K.; Mozhaev, P.B.; Borisenko, I.V.

    2002-01-01

    The pi-junction superconducting circuit dynamics was studied by means of numerical simulation technique. Parallel arrays consisting of Josephson junctions of both 0- and pi-type were studied as a model of high-T-c grain-boundary Josephson junction. The array dynamics and the critical current depe...

  3. Function Lateralization via Measuring Coherence Laterality

    Science.gov (United States)

    Wang, Ze; Mechanic-Hamilton, Dawn; Pluta, John; Glynn, Simon; Detre, John A.

    2009-01-01

    A data-driven approach for lateralization of brain function based on the spatial coherence difference of functional MRI (fMRI) data in homologous regions-of-interest (ROI) in each hemisphere is proposed. The utility of using coherence laterality (CL) to determine function laterality was assessed first by examining motor laterality using normal subjects’ data acquired both at rest and with a simple unilateral motor task and subsequently by examining mesial temporal lobe memory laterality in normal subjects and patients with temporal lobe epilepsy. The motor task was used to demonstrate that CL within motor ROI correctly lateralized functional stimulation. In patients with unilateral epilepsy studied during a scene-encoding task, CL in a hippocampus-parahippocampus-fusiform (HPF) ROI was concordant with lateralization based on task activation, and the CL index (CLI) significantly differentiated the right side group to the left side group. By contrast, normal controls showed a symmetric HPF CLI distribution. Additionally, similar memory laterality prediction results were still observed using CL in epilepsy patients with unilateral seizures after the memory encoding effect was removed from the data, suggesting the potential for lateralization of pathological brain function based on resting fMRI data. A better lateralization was further achieved via a combination of the proposed approach and the standard activation based approach, demonstrating that assessment of spatial coherence changes provides a complementary approach to quantifying task-correlated activity for lateralizing brain function. PMID:19345736

  4. Change of I-V characteristics of SiC diodes upon reactor irradiation; Modification des caracteristiques I-V de jonctions p-n au SiC du fait d'une irradiation dans un reacteur; Izmeneniya kharakteristik I-V vyrashchennogo v SiC perekhoda tipa p-n posle oblucheniya ego v reaktore; Modificaciones que sufren por irradiacion en un reactor las caracteristicas I-V de uniones p-n en SiC

    Energy Technology Data Exchange (ETDEWEB)

    Heerschap, M; De Coninck, R [Solid State Physics Dept., SCK-CEN, Mol (Belgium)

    1962-04-15

    In search for semiconductors, which can be used in high-flux reactors in order to measure flux distributions, we irradiated SiC p-n junctions in the Belgium BR-1 reactor. Two types of SiC-diodes of different origin have been irradiated. These junctions are grown in the Lely-furnace. The change in forward and reverse characteristics have been measured during and after irradiation up to temperatures of 150{sup o}C, while measurements up to a temperature of 500{sup o}C are in progress. It has been found that one type resists BR-1 neutrons up to an integrated flux of 10{sup 15} n/cm{sup 2}, while the other resists irradiation up to a flux of 10{sup 17} n/cm{sup 2}. The changes in characteristics are given as well as the result of some annealing experiments. (author) [French] En recherchant des semi-conducteurs pouvant servir a mesurer les distributions de flux dans les reacteurs a haut flux de neutrons, les auteurs ont irradie des jonctions p-n au SiC dans le reacteur belge BR-1. Deux types de diodes a SiC d'origines differentes ont ete ainsi irradies. Les jonctions en question sont preparees par etirage dans le four Lely. Les auteurs ont mesure les modifications subies par les caracteristiques I-V apres et pendant l'irradiation a des temperatures allant jusqu'a 150{sup o}C; ils poursuivent leurs mesures dans la gamme des temperatures allant de 150{sup o}C a 500{sup o}C. Us ont constate que l'un des types de diode a SiC resiste aux neutrons du reacteur BR-1 jusqu'a 10{sup 15} n/cm{sup 2}, tandis que l'autre type resiste a l'irradiation jusqu'a 10{sup 17} n/cm{sup 2}. Les auteurs indiquent les modifications subies par les caracteristiques, ainsi que le resultat de certaines experiences de recuit. (author) [Spanish] Los autores estan tratando de encontrar semiconductores con los que sea posible medir distribuciones de flujo en reactores de flujo elevado, y con este fin irradiaron uniones p-n del SiC en el reactor BR-1 de Belgica. Irradiaron dos tipos de diodos de SiC de

  5. Hydrogen passivation of n+p and p+n heteroepitaxial InP solar cell structures

    Science.gov (United States)

    Chatterjee, B.; Ringel, S. A.; Hoffman, R., Jr.

    1995-01-01

    High-efficiency, heteroepitaxial (HE) InP solar cells, grown on GaAs, Si or Ge substrates, are desirable for their mechanically strong, light-weight and radiation-hard properties. However, dislocations, caused by lattice mismatch, currently limit the performance of the HE cells. This occurs through shunting paths across the active photovoltaic junction and by the formation of deep levels. In previous work we have demonstrated that plasma hydrogenation is an effective and stable means to passivate the electrical activity of dislocations in specially designed HE InP test structures. In this work, we present the first report of successful hydrogen passivation in actual InP cell structures grown on GaAs substrates by metalorganic chemical vapor deposition (MOCVD). We have found that a 2 hour exposure to a 13.56 MHz hydrogen plasma at 275 C reduces the deep level concentration in HE n+n InP cell structures from as-grown values of approximately 10(exp 15)/cm(exp -3), down to 1-2 x 10(exp 13)/cm(exp -3). The deep levels in the p-type base region of the cell structure match those of our earlier p-type test structures, which were attributed to dislocations or related point defect complexes. All dopants were successfully reactivated by a 400 C, 5 minute anneal with no detectable activation of deep levels. I-V analysis indicated a subsequent approximately 10 fold decrease in reverse leakage current at -1 volt reverse bias, and no change in the forward biased series resistance of the cell structure which indicates complete reactivation of the n+ emitter. Furthermore, electrochemical C-V profiling indicates greatly enhanced passivation depth, and hence hydrogen diffusion, for heteroepitaxial structures when compared with identically processed homoepitaxial n+p InP structures. An analysis of hydrogen diffusion in dislocated InP will be discussed, along with comparisons of passivation effectiveness for n+p versus p+n heteroepitaxial cell configurations. Preliminary hydrogen

  6. A high efficiency lateral light emitting device on SOI

    NARCIS (Netherlands)

    Hoang, T.; Le Minh, P.; Holleman, J.; Zieren, V.; Goossens, M.J.; Schmitz, Jurriaan

    2005-01-01

    The infrared light emission of lateral p/sup +/-p-n/sup +/ diodes realized on SIMOX-SOI (separation by implantation of oxygen - silicon on insulator) substrates has been studied. The confinement of the free carriers in one dimension due to the buried oxide was suggested to be a key point to increase

  7. Ferromagnetic Josephson Junctions for Cryogenic Memory

    Science.gov (United States)

    Niedzielski, Bethany M.; Gingrich, Eric C.; Khasawneh, Mazin A.; Loloee, Reza; Pratt, William P., Jr.; Birge, Norman O.

    2015-03-01

    Josephson junctions containing ferromagnetic materials are of interest for both scientific and technological purposes. In principle, either the amplitude of the critical current or superconducting phase shift across the junction can be controlled by the relative magnetization directions of the ferromagnetic layers in the junction. Our approach concentrates on phase control utilizing two junctions in a SQUID geometry. We will report on efforts to control the phase of junctions carrying either spin-singlet or spin-triplet supercurrent for cryogenic memory applications. Supported by Northorp Grumman Corporation and by IARPA under SPAWAR Contract N66001-12-C-2017.

  8. Method of manufacturing Josephson junction integrated circuits

    International Nuclear Information System (INIS)

    Jillie, D.W. Jr.; Smith, L.N.

    1985-01-01

    Josephson junction integrated circuits of the current injection type and magnetically controlled type utilize a superconductive layer that forms both Josephson junction electrode for the Josephson junction devices on the integrated circuit as well as a ground plane for the integrated circuit. Large area Josephson junctions are utilized for effecting contact to lower superconductive layers and islands are formed in superconductive layers to provide isolation between the groudplane function and the Josephson junction electrode function as well as to effect crossovers. A superconductor-barrier-superconductor trilayer patterned by local anodization is also utilized with additional layers formed thereover. Methods of manufacturing the embodiments of the invention are disclosed

  9. Molecular series-tunneling junctions.

    Science.gov (United States)

    Liao, Kung-Ching; Hsu, Liang-Yan; Bowers, Carleen M; Rabitz, Herschel; Whitesides, George M

    2015-05-13

    Charge transport through junctions consisting of insulating molecular units is a quantum phenomenon that cannot be described adequately by classical circuit laws. This paper explores tunneling current densities in self-assembled monolayer (SAM)-based junctions with the structure Ag(TS)/O2C-R1-R2-H//Ga2O3/EGaIn, where Ag(TS) is template-stripped silver and EGaIn is the eutectic alloy of gallium and indium; R1 and R2 refer to two classes of insulating molecular units-(CH2)n and (C6H4)m-that are connected in series and have different tunneling decay constants in the Simmons equation. These junctions can be analyzed as a form of series-tunneling junctions based on the observation that permuting the order of R1 and R2 in the junction does not alter the overall rate of charge transport. By using the Ag/O2C interface, this system decouples the highest occupied molecular orbital (HOMO, which is localized on the carboxylate group) from strong interactions with the R1 and R2 units. The differences in rates of tunneling are thus determined by the electronic structure of the groups R1 and R2; these differences are not influenced by the order of R1 and R2 in the SAM. In an electrical potential model that rationalizes this observation, R1 and R2 contribute independently to the height of the barrier. This model explicitly assumes that contributions to rates of tunneling from the Ag(TS)/O2C and H//Ga2O3 interfaces are constant across the series examined. The current density of these series-tunneling junctions can be described by J(V) = J0(V) exp(-β1d1 - β2d2), where J(V) is the current density (A/cm(2)) at applied voltage V and βi and di are the parameters describing the attenuation of the tunneling current through a rectangular tunneling barrier, with width d and a height related to the attenuation factor β.

  10. Flexible 2D layered material junctions

    Science.gov (United States)

    Balabai, R.; Solomenko, A.

    2018-03-01

    Within the framework of the methods of the electron density functional and the ab initio pseudopotential, we have obtained the valence electron density spatial distribution, the densities of electron states, the widths of band gaps, the charges on combined regions, and the Coulomb potentials for graphene-based flexible 2D layered junctions, using author program complex. It is determined that the bending of the 2D layered junctions on the angle α leads to changes in the electronic properties of these junctions. In the graphene/graphane junction, there is clear charge redistribution with different signs in the regions of junctions. The presence in the heterojunctions of charge regions with different signs leads to the formation of potential barriers. The greatest potential jump is in the graphene/fluorographene junction. The greatest value of the band gap width is in the graphene/graphane junction.

  11. Observation of Switchable Photoresponse of a Monolayer WSe2-MoS2 Lateral Heterostructure via Photocurrent Spectral Atomic Force Microscopic Imaging.

    Science.gov (United States)

    Son, Youngwoo; Li, Ming-Yang; Cheng, Chia-Chin; Wei, Kung-Hwa; Liu, Pingwei; Wang, Qing Hua; Li, Lain-Jong; Strano, Michael S

    2016-06-08

    In the pursuit of two-dimensional (2D) materials beyond graphene, enormous advances have been made in exploring the exciting and useful properties of transition metal dichalcogenides (TMDCs), such as a permanent band gap in the visible range and the transition from indirect to direct band gap due to 2D quantum confinement, and their potential for a wide range of device applications. In particular, recent success in the synthesis of seamless monolayer lateral heterostructures of different TMDCs via chemical vapor deposition methods has provided an effective solution to producing an in-plane p-n junction, which is a critical component in electronic and optoelectronic device applications. However, spatial variation of the electronic and optoelectonic properties of the synthesized heterojunction crystals throughout the homogeneous as well as the lateral junction region and the charge carrier transport behavior at their nanoscale junctions with metals remain unaddressed. In this work, we use photocurrent spectral atomic force microscopy to image the current and photocurrent generated between a biased PtIr tip and a monolayer WSe2-MoS2 lateral heterostructure. Current measurements in the dark in both forward and reverse bias reveal an opposite characteristic diode behavior for WSe2 and MoS2, owing to the formation of a Schottky barrier of dissimilar properties. Notably, by changing the polarity and magnitude of the tip voltage applied, pixels that show the photoresponse of the heterostructure are observed to be selectively switched on and off, allowing for the realization of a hyper-resolution array of the switchable photodiode pixels. This experimental approach has significant implications toward the development of novel optoelectronic technologies for regioselective photodetection and imaging at nanoscale resolutions. Comparative 2D Fourier analysis of physical height and current images shows high spatial frequency variations in substrate/MoS2 (or WSe2) contact that

  12. Observation of Switchable Photoresponse of a Monolayer WSe 2 –MoS 2 Lateral Heterostructure via Photocurrent Spectral Atomic Force Microscopic Imaging

    KAUST Repository

    Son, Youngwoo

    2016-04-27

    In the pursuit of two-dimensional (2D) materials beyond graphene, enormous advances have been made in exploring the exciting and useful properties of transition metal dichalcogenides (TMDCs), such as a permanent band gap in the visible range and the transition from indirect to direct band gap due to 2D quantum confinement, and their potential for a wide range of device applications. In particular, recent success in the synthesis of seamless monolayer lateral heterostructures of different TMDCs via chemical vapor deposition methods has provided an effective solution to producing an in-plane p-n junction, which is a critical component in electronic and optoelectronic device applications. However, spatial variation of the electronic and optoelectonic properties of the synthesized heterojunction crystals throughout the homogeneous as well as the lateral junction region and the charge carrier transport behavior at their nanoscale junctions with metals remain unaddressed. In this work, we use photocurrent spectral atomic force microscopy to image the current and photocurrent generated between a biased PtIr tip and a monolayer WSe2-MoS2 lateral heterostructure. Current measurements in the dark in both forward and reverse bias reveal an opposite characteristic diode behavior for WSe2 and MoS2, owing to the formation of a Schottky barrier of dissimilar properties. Notably, by changing the polarity and magnitude of the tip voltage applied, pixels that show the photoresponse of the heterostructure are observed to be selectively switched on and off, allowing for the realization of a hyper-resolution array of the switchable photodiode pixels. This experimental approach has significant implications toward the development of novel optoelectronic technologies for regioselective photodetection and imaging at nanoscale resolutions. Comparative 2D Fourier analysis of physical height and current images shows high spatial frequency variations in substrate/MoS2 (or WSe2) contact that

  13. Equality of analyzing power and polarization in the reaction 3H(p,n)3He

    International Nuclear Information System (INIS)

    Donoghue, T.R.; Doyle, S.M.A.; Clark, H.W.; Dries, L.J.; Regner, J.L.; Tornow, W.; Byrd, R.C.; Lisowski, P.W.; Walter, R.L.

    1976-01-01

    The quantities A/sub y/ and P/sub y/ were remeasured for E/sub p/ 3 H(p,n) 3 He. Although our A/sub y/ data confirm previous data, our P/sub y/ values are appreciably larger than earlier results and in fact agree well with those for A/sub y/. Elimination of the previously reported A/sub y/-P/sub y/ difference has important consequences. Charge-symmetry-breaking effects must be small or nonexistent in this reaction; and the previously required f-wave admixture to the lowest J/sup pi/=2 - state of 4 He is no longer necessary

  14. Quasifree (p ,p N ) scattering of light neutron-rich nuclei near N =14

    Science.gov (United States)

    Díaz Fernández, P.; Alvarez-Pol, H.; Crespo, R.; Cravo, E.; Atar, L.; Deltuva, A.; Aumann, T.; Avdeichikov, V.; Beceiro-Novo, S.; Bemmerer, D.; Benlliure, J.; Bertulani, C. A.; Boillos, J. M.; Boretzky, K.; Borge, M. J. G.; Caamaño, M.; Cabanelas, P.; Caesar, C.; Casarejos, E.; Catford, W.; Cederkäll, J.; Chartier, M.; Chulkov, L. V.; Cortina-Gil, D.; Datta Pramanik, U.; Dillmann, I.; Elekes, Z.; Enders, J.; Ershova, O.; Estradé, A.; Farinon, F.; Fernández-Domínguez, B.; Fraile, L. M.; Freer, M.; Galaviz, D.; Geissel, H.; Gernhäuser, R.; Golubev, P.; Göbel, K.; Hagdahl, J.; Heftrich, T.; Heil, M.; Heine, M.; Heinz, A.; Henriques, A.; Holl, M.; Hufnagel, A.; Ignatov, A.; Johansson, H. T.; Jonson, B.; Jurčiukonis, D.; Kalantar-Nayestanaki, N.; Kanungo, R.; Kelic-Heil, A.; Knyazev, A.; Kröll, T.; Kurz, N.; Labiche, M.; Langer, C.; Le Bleis, T.; Lemmon, R.; Lindberg, S.; Machado, J.; Marganiec, J.; Moro, A. M.; Movsesyan, A.; Nacher, E.; Najafi, A.; Nikolskii, E.; Nilsson, T.; Nociforo, C.; Panin, V.; Paschalis, S.; Perea, A.; Petri, M.; Pietras, B.; Pietri, S.; Plag, R.; Reifarth, R.; Ribeiro, G.; Rigollet, C.; Rossi, D.; Röder, M.; Savran, D.; Scheit, H.; Simon, H.; Sorlin, O.; Syndikus, I.; Taylor, J. T.; Tengblad, O.; Thies, R.; Togano, Y.; Vandebrouck, M.; Velho, P.; Volkov, V.; Wagner, A.; Wamers, F.; Weick, H.; Wheldon, C.; Wilson, G.; Winfield, J. S.; Woods, P.; Yakorev, D.; Zhukov, M.; Zilges, A.; Zuber, K.; R3B Collaboration

    2018-02-01

    Background: For many years, quasifree scattering reactions in direct kinematics have been extensively used to study the structure of stable nuclei, demonstrating the potential of this approach. The R 3B collaboration has performed a pilot experiment to study quasifree scattering reactions in inverse kinematics for a stable 12C beam. The results from that experiment constitute the first quasifree scattering results in inverse and complete kinematics. This technique has lately been extended to exotic beams to investigate the evolution of shell structure, which has attracted much interest due to changes in shell structure if the number of protons or neutrons is varied. Purpose: In this work we investigate for the first time the quasifree scattering reactions (p ,p n ) and (p ,2 p ) simultaneously for the same projectile in inverse and complete kinematics for radioactive beams with the aim to study the evolution of single-particle properties from N =14 to N =15 . Method: The structure of the projectiles 23O, 22O, and 21N has been studied simultaneously via (p ,p n ) and (p ,2 p ) quasifree knockout reactions in complete inverse kinematics, allowing the investigation of proton and neutron structure at the same time. The experimental data were collected at the R3B -LAND setup at GSI at beam energies of around 400 MeV/u. Two key observables have been studied to shed light on the structure of those nuclei: the inclusive cross sections and the corresponding momentum distributions. Conclusions: The knockout reactions (p ,p n ) and (p ,2 p ) with radioactive beams in inverse kinematics have provided important and complementary information for the study of shell evolution and structure. For the (p ,p n ) channels, indications of a change in the structure of these nuclei moving from N =14 to N =15 have been observed, i.e., from the 0 d5 /2 shell to the 1 s1 /2 . This supports previous observations of a subshell closure at N =14 for neutron-rich oxygen isotopes and its weakening

  15. Beam shaping assembly optimization for (7)Li(p,n)(7)Be accelerator based BNCT.

    Science.gov (United States)

    Minsky, D M; Kreiner, A J

    2014-06-01

    Within the framework of accelerator-based BNCT, a project to develop a folded Tandem-ElectroStatic-Quadrupole accelerator is under way at the Atomic Energy Commission of Argentina. The proposed accelerator is conceived to deliver a proton beam of 30mA at about 2.5MeV. In this work we explore a Beam Shaping Assembly (BSA) design based on the (7)Li(p,n)(7)Be neutron production reaction to obtain neutron beams to treat deep seated tumors. © 2013 Elsevier Ltd. All rights reserved.

  16. 0+ analogue state in 118Sb from 117Sn(p,nγ) reaction

    International Nuclear Information System (INIS)

    Pal, J.; Dey, C.C.; Bose, S.; Sinha, B.K.; Chatterjee, M.B.; Mahapatra, D.P.

    1996-01-01

    The analogue of the 0 + ground state in 118 Sn has been observed in the compound nucleus 118 Sb through 117 Sn(p,nγ) 117 Sb reaction. The neutron decays of this analogue resonance have been studied from the deexciting γ-rays of the residual nucleus 117 Sb. From off resonance excitation functions, spin assignments have been made to states in 117 Sb, on the basis of Hauser-Feshbach formalism. The resonance parameters of the isobaric analogue resonance have been determined, including the total, proton and neutron decay widths. (orig.)

  17. Production of 139Ce by the 139La(p,n)139Ce reaction

    International Nuclear Information System (INIS)

    Ishioka, Noriko S.; Sekine, Toshiaki; Izumo, Mishiroku; Hashimoto, Kazuyuki; Kobayashi, Katsutoshi; Matsuoka, Hiromitsu

    2002-01-01

    To produce a carrier-free 139 Ce to be used as an efficiency-calibration source for Ge detectors, a target-preparation method and a chemical separation method were studied. It was found that commercially available powders of lanthanum-oxide and lanthanum metal are applicable to a target material in the nuclear reaction 139 La(p,n) 139 Ce. In the separation of 139 Ce from an irradiated lanthanum target, a solvent-extraction method and an ion-exchange method gave final products in good chemical purity. (author)

  18. High-dimensional data: p >> n in mathematical statistics and bio-medical applications

    OpenAIRE

    Van De Geer, Sara A.; Van Houwelingen, Hans C.

    2004-01-01

    The workshop 'High-dimensional data: p >> n in mathematical statistics and bio-medical applications' was held at the Lorentz Center in Leiden from 9 to 20 September 2002. This special issue of Bernoulli contains a selection of papers presented at that workshop. ¶ The introduction of high-throughput micro-array technology to measure gene-expression levels and the publication of the pioneering paper by Golub et al. (1999) has brought to life a whole new branch of data analysis under the name of...

  19. Josephson junctions and circle maps

    Energy Technology Data Exchange (ETDEWEB)

    Bak, P; Bohr, T; Jensen, M H; Christiansen, P V

    1984-01-01

    The return map of a differential equation for the current driven Josephson junction, or the damped driven pendulum, is shown numerically to be a circle map. Phase locking, noise and hysteresis, can thus be understood in a simple and coherent way. The transition to chaos is related to the development of a cubic inflection point. Recent theoretical results on universal behavior at the transition to chaos can readily be checked experimentally by studying I-V characteristics. 17 references, 1 figure.

  20. Squeezed States in Josephson Junctions.

    Science.gov (United States)

    Hu, X.; Nori, F.

    1996-03-01

    We have studied quantum fluctuation properties of Josephson junctions in the limit of large Josephson coupling energy and small charging energy, when the eigenstates of the system can be treated as being nearly localized. We have considered(X. Hu and F. Nori, preprints.) a Josephson junction in a variety of situations, e.g., coupled to one or several of the following elements: a capacitor, an inductor (in a superconducting ring), and an applied current source. By solving an effective Shrödinger equation, we have obtained squeezed vacuum (coherent) states as the ground states of a ``free-oscillating'' (linearly-driven) Josephson junction, and calculated the uncertainties of its canonical momentum, charge, and coordinate, phase. We have also shown that the excited states of the various systems we consider are similar to the number states of a simple harmonic oscillator but with different fluctuation properties. Furthermore, we have obtained the time-evolution operators for these systems. These operators can make it easier to calculate the time-dependence of the expectation values and fluctuations of various quantities starting from an arbitrary initial state.

  1. Superconducting tunnel-junction refrigerator

    International Nuclear Information System (INIS)

    Melton, R.G.; Paterson, J.L.; Kaplan, S.B.

    1980-01-01

    The dc current through an S 1 -S 2 tunnel junction, with Δ 2 greater than Δ 1 , when biased with eV 1 +Δ 2 , will lower the energy in S 1 . This energy reduction will be shared by the phonons and electrons. This device is shown to be analogous to a thermoelectric refrigerator with an effective Peltier coefficient π* approx. Δ 1 /e. Tunneling calculations yield the cooling power P/sub c/, the electrical power P/sub e/ supplied by the bias supply, and the cooling efficiency eta=P/sub c//P/sub e/. The maximum cooling power is obtained for eV= +- (Δ 2 -Δ 1 ) and t 1 =T 1 /T/sub c/1 approx. 0.9. Estimates are made of the temperature difference T 2 -T 1 achievable in Al-Pb and Sn-Pb junctions with an Al 2 O 3 tunneling barrier. The performance of this device is shown to yield a maximum cooling efficiency eta approx. = Δ 1 /(Δ 2 -Δ 1 ) which can be compared with that available in an ideal Carnot refrigerator of eta=T 1 /(T 2 -T 1 ). The development of a useful tunnel-junction refrigerator requires a tunneling barrier with an effective thermal conductance per unit area several orders of magnitude less than that provided by the A1 2 O 3 barrier in the Al-Pb and Sn-Pb systems

  2. Enhanced Photoelectrocatalytic Activity of BiOI Nanoplate-Zinc Oxide Nanorod p-n Heterojunction.

    Science.gov (United States)

    Kuang, Pan-Yong; Ran, Jing-Run; Liu, Zhao-Qing; Wang, Hong-Juan; Li, Nan; Su, Yu-Zhi; Jin, Yong-Gang; Qiao, Shi-Zhang

    2015-10-19

    The development of highly efficient and robust photocatalysts has attracted great attention for solving the global energy crisis and environmental problems. Herein, we describe the synthesis of a p-n heterostructured photocatalyst, consisting of ZnO nanorod arrays (NRAs) decorated with BiOI nanoplates (NPs), by a facile solvothermal method. The product thus obtained shows high photoelectrochemical water splitting performance and enhanced photoelectrocatalytic activity for pollutant degradation under visible light irradiation. The p-type BiOI NPs, with a narrow band gap, not only act as a sensitizer to absorb visible light and promote electron transfer to the n-type ZnO NRAs, but also increase the contact area with organic pollutants. Meanwhile, ZnO NRAs provide a fast electron-transfer channel, thus resulting in efficient separation of photoinduced electron-hole pairs. Such a p-n heterojunction nanocomposite could serve as a novel and promising catalyst in energy and environmental applications. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  3. Novel p-n heterojunction copper phosphide/cuprous oxide photocathode for solar hydrogen production.

    Science.gov (United States)

    Chen, Ying-Chu; Chen, Zhong-Bo; Hsu, Yu-Kuei

    2018-08-01

    A Copper phosphide (Cu 3 P) micro-rod (MR) array, with coverage by an n-Cu 2 O thin layer by electrodeposition as a photocathode, has been directly fabricated on copper foil via simple electro-oxidation and phosphidation for photoelectrochemical (PEC) hydrogen production. The morphology, structure, and composition of the Cu 3 P/Cu 2 O heterostructure are systematically analyzed using a scanning electron microscope (SEM), X-ray diffraction and X-ray photoelectron spectra. The PEC measurements corroborate that the p-Cu 3 P/n-Cu 2 O heterostructural photocathode illustrates efficient charge separation and low charge transfer resistance to achieve the highest photocurrent of 430 μA cm -2 that is greater than other transition metal phosphide materials. In addition, a detailed energy diagram of the p-Cu 3 P/n-Cu 2 O heterostructure was investigated using Mott-Schottky analysis. Our study paves the way to explore phosphide-based materials in a new class for solar energy applications. Copyright © 2018 Elsevier Inc. All rights reserved.

  4. Discussion of isomeric ratios in (p, n) and (d, 2n) reaction

    Energy Technology Data Exchange (ETDEWEB)

    Bakhshiyan, T. M., E-mail: tiruhi44@mail.ru [Yerevan State University (Armenia)

    2016-01-15

    Isomeric ratios (IR) in the (p, n) and (d, 2n) reactions are considered. The dependence of IR values on the projectile type and energy, the target- and product-nucleus spin, the spin difference between the isomeric and ground states of products, and the product mass number is discussed. The isomeric ratios for 46 product nuclei (from {sup 44m,g}Sc to {sup 127m,g}Xe) obtained in reactions where target and product nuclei have identical mass numbers were calculated at energies from the reaction threshold to 50 MeV (with a step of ΔE = 1 MeV). The calculations in question were performed with the aid of the TALYS 1.4 code package. The calculated IR values were compared with their experimental counterparts available from the literature (EXFOR database). In the majority of cases, the calculated IR values agree well with the experimental data in question. It is noteworthy that the IR values obtained in (d, 2n) reactions are substantially greater than those in (p, n) reactions.

  5. Facile fabrication and electrical investigations of nanostructured p-Si/n-TiO2 hetero-junction diode

    Science.gov (United States)

    Kumar, Arvind; Mondal, Sandip; Rao, K. S. R. Koteswara

    2018-05-01

    In this work, we have fabricated the nanostructured p-Si/n-TiO2 hetero-junction diode by using a facile spin-coating method. The XRD analysis suggests the presence of well crystalline anatase TiO2 film on Si with small grain size (˜16 nm). We have drawn the band alignment using Anderson model to understand the electrical transport across the junction. The current-voltage (J-V) characteristics analysis reveals the good rectification ratio (103 at ± 3 V) and slightly higher ideality factor (4.7) of our device. The interface states are responsible for the large ideality factor as Si/TiO2 form a dissimilar interface and possess a large number of dangling bonds. The study reveals the promises to be used Si/TiO2 diode as an alternative to the traditional p-n homo-junction diode, which typically require high budget.

  6. Motor neuron, nerve, and neuromuscular junction disease.

    Science.gov (United States)

    Finsterer, Josef; Papić, Lea; Auer-Grumbach, Michaela

    2011-10-01

    The aim is to review the most relevant findings published during the last year concerning clinical, genetic, pathogenic, and therapeutic advances in motor neuron disease, neuropathies, and neuromuscular junction disorders. Studies on animal and cell models have improved the understanding of how mutated survival motor neuron protein in spinal muscular atrophy governs the pathogenetic processes. New phenotypes of SOD1 mutations have been described. Moreover, animal models enhanced the insight into the pathogenetic background of sporadic and familial amyotrophic lateral sclerosis. Novel treatment options for motor neuron disease have been described in humans and animal models. Considerable progress has been achieved also in elucidating the genetic background of many forms of inherited neuropathies and high clinical and genetic heterogeneity has been demonstrated. Mutations in MuSK and GFTP1 have been shown to cause new types of congenital myasthenic syndromes. A third type of autoantibodies (Lrp4) has been detected to cause myasthenia gravis. Advances in the clinical and genetic characterization of motor neuron diseases, neuropathies, and neuromuscular transmission defects have important implications on the fundamental understanding, diagnosis, and management of these disorders. Identification of crucial steps of the pathogenetic process may provide the basis for the development of novel therapeutic strategies.

  7. The Dissolution of Double Holliday Junctions

    DEFF Research Database (Denmark)

    Bizard, Anna H; Hickson, Ian D

    2014-01-01

    as "double Holliday junction dissolution." This reaction requires the cooperative action of a so-called "dissolvasome" comprising a Holliday junction branch migration enzyme (Sgs1/BLM RecQ helicase) and a type IA topoisomerase (Top3/TopoIIIα) in complex with its OB (oligonucleotide/oligosaccharide binding......Double Holliday junctions (dHJS) are important intermediates of homologous recombination. The separate junctions can each be cleaved by DNA structure-selective endonucleases known as Holliday junction resolvases. Alternatively, double Holliday junctions can be processed by a reaction known......) fold containing accessory factor (Rmi1). This review details our current knowledge of the dissolution process and the players involved in catalyzing this mechanistically complex means of completing homologous recombination reactions....

  8. Geodynamical simulation of the RRF triple junction

    Science.gov (United States)

    Wang, Z.; Wei, D.; Liu, M.; Shi, Y.; Wang, S.

    2017-12-01

    Triple junction is the point at which three plate boundaries meet. Three plates at the triple junction form a complex geological tectonics, which is a natural laboratory to study the interactions of plates. This work studies a special triple junction, the oceanic transform fault intersects the collinear ridges with different-spreading rates, which is free of influence of ridge-transform faults and nearby hotspots. First, we build 3-D numerical model of this triple junction used to calculate the stead-state velocity and temperature fields resulting from advective and conductive heat transfer. We discuss in detail the influence of the velocity and temperature fields of the triple junction from viscosity, spreading rate of the ridge. The two sides of the oceanic transform fault are different sensitivities to the two factors. And, the influence of the velocity mainly occurs within 200km of the triple junction. Then, we modify the model by adding a ridge-transform fault to above model and directly use the velocity structure of the Macquarie triple junction. The simulation results show that the temperature at both sides of the oceanic transform fault decreases gradually from the triple junction, but the temperature difference between the two sides is a constant about 200°. And, there is little effect of upwelling velocity away from the triple junction 100km. The model results are compared with observational data. The heat flux and thermal topography along the oceanic transform fault of this model are consistent with the observed data of the Macquarie triple junction. The earthquakes are strike slip distributed along the oceanic transform fault. Their depths are also consistent with the zone of maximum shear stress. This work can help us to understand the interactions of plates of triple junctions and help us with the foundation for the future study of triple junctions.

  9. Hysteresis development in superconducting Josephson junctions

    International Nuclear Information System (INIS)

    Refai, T.F.; Shehata, L.N.

    1988-09-01

    The resistively and capacitive shunted junction model is used to investigate hysteresis development in superconducting Josephson junctions. Two empirical formulas that relate the hysteresis width and the quasi-particle diffusion length in terms of the junctions electrical parameters, temperature and frequency are obtained. The obtained formulas provide a simple tool to investigate the full potentials of the hysteresis phenomena. (author). 9 refs, 3 figs

  10. Ultra-shallow junction (USJ) sheet resistance measurements with a non-penetrating four point probe

    International Nuclear Information System (INIS)

    Benjamin, M.C.; Hillard, R.J.; Borland, J.O.

    2005-01-01

    An accurate method to measure the four point probe (4PP) sheet resistance (R S ) of ultra shallow junction (USJ) Source-Drain Extension structures is described. The method utilizes Elastic Material probes (EM-probes) to form non-penetrating contacts to the silicon surface [R.J. Hillard, P.Y. Hung, William Chism, C. Win Ye, W.H. Howland, L.C. Tan, C.E. Kalnas, Characterization and Metrology for ULSI Technology, AIP Conference proceedings 683 (2003) 802.]. The probe design is kinematic and the force is controlled to ensure elastic deformation of the probe material. The probe material is such that large direct tunneling currents can flow through the native oxide thereby forming a low impedance contact. Sheet resistance measurements on USJ implanted P+/N structures with Secondary Ion Mass Spectroscopy (SIMS) junction depths less than 15 nm have been measured. The method is demonstrated on implanted USJ structures and found to be consistent with expectations

  11. Invariant submanifold for series arrays of Josephson junctions.

    Science.gov (United States)

    Marvel, Seth A; Strogatz, Steven H

    2009-03-01

    We study the nonlinear dynamics of series arrays of Josephson junctions in the large-N limit, where N is the number of junctions in the array. The junctions are assumed to be identical, overdamped, driven by a constant bias current, and globally coupled through a common load. Previous simulations of such arrays revealed that their dynamics are remarkably simple, hinting at the presence of some hidden symmetry or other structure. These observations were later explained by the discovery of N-3 constants of motion, the choice of which confines the resulting flow in phase space to a low-dimensional invariant manifold. Here we show that the dimensionality can be reduced further by restricting attention to a special family of states recently identified by Ott and Antonsen. In geometric terms, the Ott-Antonsen ansatz corresponds to an invariant submanifold of dimension one less than that found earlier. We derive and analyze the flow on this submanifold for two special cases: an array with purely resistive loading and another with resistive-inductive-capacitive loading. Our results recover (and in some instances improve) earlier findings based on linearization arguments.

  12. 26Mg(p,n)26Al and 23Na(α,n)26Al reactions

    International Nuclear Information System (INIS)

    Skelton, R.T.

    1985-01-01

    Cross sections for the 26 Mg(p,n) 26 Al reaction were measured from threshold at 4.988 MeV to 5.820 MeV. Cross sections for the 23 Na(α,n) 26 Al reaction were measured from threshold at 3.483 MeV to 4.597 MeV. In each case, separate measurements were to the ground state and to the first and second excited states of 26 Al. Cross sections for the inverse reactions were calculated and reaction rate factors relating to the destruction of 26 Al in a supernova environment were determined. Astrophysical implications relating to the observation of live and extinct 26 Al are discussed. Excitation functions for several additional exit channels for the 26 Mg + rho and 23 Na + α reactions are reported

  13. Air-stable, solution-processed oxide p-n heterojunction ultraviolet photodetector.

    Science.gov (United States)

    Kim, Do Young; Ryu, Jiho; Manders, Jesse; Lee, Jaewoong; So, Franky

    2014-02-12

    Air-stable solution processed all-inorganic p-n heterojunction ultraviolet photodetector is fabricated with a high gain (EQE, 25 300%). Solution-processed NiO and ZnO films are used as p-type and n-type ultraviolet sensitizing materials, respectively. The high gain in the detector is due to the interfacial trap-induced charge injection that occurs at the ITO/NiO interface by photogenerated holes trapped in the NiO film. The gain of the detector is controlled by the post-annealing temperature of the solution-processed NiO films, which are studied by X-ray photoelectron spectroscopy (XPS).

  14. Low frequency noise in p-InAsSbP/n-InAs infrared photodiodes

    Science.gov (United States)

    Dyakonova, N.; Karandashev, S. A.; Levinshtein, M. E.; Matveev, B. A.; Remennyi, M. A.

    2018-06-01

    We report the first experimental study of low-frequency noise in p-InAsSbP/n-InAs infrared photodiodes. For forward bias, experiments have been carried out at 300 and 77 K, in the photovoltaic regime the measurements have been done at 300 K. At room temperature the current noise spectral density, SI , exhibits the ∼1/f frequency dependence. For low currents, I ≤ I 0 ∼ 4 × 10‑5 A, S I is proportional to I 2, at higher currents this dependence changes to S I ∼ I. At 77 K the noise spectral density is significantly higher than at 300 K, and Lorentzian contributions to noise are observed. The current dependences of spectral noise density can be approximately described as S I ∼ I 1.5 and show particularities suggesting the contribution of defects.

  15. 1H(d,2p)n reaction at 2 GeV deuteron energy

    International Nuclear Information System (INIS)

    Erohuml, J.; Fodor, Z.; Koncz, P.; Seres, Z.; Perdrisat, C.F.; Punjabi, V.; Boudard, A.; Bonin, B.; Garcon, M.; Lombard, R.; Mayer, B.; Terrien, Y.; Tomasi, E.; Boivin, M.; Yonnet, J.; Bhang, H.C.; Youn, M.; Belostotsky, S.L.; Grebenuk, O.G.; Nikulin, V.N.; Kudin, L.G.

    1994-01-01

    The 1 H(d,2p)n deuteron breakup reaction was measured at 2 GeV deuteron energy in a kinematically complete experiment. Fivefold differential cross sections are given in a wide range of kinematical variables and analyzed in terms of impulse approximation and NN rescattering. The deuteron momentum density was determined and deviations were found depending on the value of the four-momentum transfer |t| in the scattering process. At low |t| the momentum densities are in good agreement with the impulse approximation whereas large discrepancies were found above q∼200 MeV/c when the four-momentum transfer was large. Various possible origins of the anomalous behavior at high q values are discussed

  16. Pionic modes of excitation in continuum from the (p,n) reaction

    International Nuclear Information System (INIS)

    Izumoto, T.; Ichimura, M.; Ko, C.M.; Siemens, P.J.; Texas A and M Univ., College Station

    1982-01-01

    The continuum spectra of the 90 Zr(p, n) reaction at Esub(p) = 200 MeV are studied in the DWBA up to high excitation hω(approx. <= 60 MeV) and large momentum transfer q(approx. <= 3 μsub(π)). The response function is obtained in a local-density approximation, taking into account p-h and Δ-h excitations and the short-range correlation g' between them. For small g' approx. <= 0.5, a broad bump due to the opalescence effect can be seen in the calculated cross section at rather low excitation and near q approx. equal to 2.2 μsub(π). However, for larger g', this effect is suppressed, and a broader bump in cross section is located at higher excitation. (orig.)

  17. Study of non-static behavior of tauσ-modes by (p,n) reactions

    International Nuclear Information System (INIS)

    Ichimura, M.; Izumoto, T.; Ko, C.M.; Siemens, P.J.

    1984-01-01

    The nuclear response function of tauσ-modes are investigated in the wide range of the energy-momentum plane (ω,q). The opalescence phenomena associated with the pion condensation is clearly seen at q asymptotically equals 2.2 μ (μ being the pion mass) and rather low ω in the response function of the normal nuclear matter if the Migdal parameter g' >= 0.5. To investigate such behavior of the nuclear response to the tauσ-modes, 90 Zr(p,n) reaction to the continuum states is analyzed by DWBA. The response functions of the finite nucleus are constructed by the local density approximation from those of the nuclear matter. It is found that the finiteness and the distorted wave effects smear the enhancement (the opalescence phenomena) considerably, but it would still be seen if q' >= 0.4. (author)

  18. Preparation of carrier-free Phosphorus-32 from 31P(n,γ )32P reaction

    International Nuclear Information System (INIS)

    Rafii, H.; Arbab Zavar, H.; Avaz Moghadam, S.

    1999-01-01

    The phosphorus-32 is a widely used radioisotope as as tracer or radioactive source in nuclear medicine, and in many other biotechnical applications. In this paper, preparation of carrier-free P-32 with a high specific activity was studied by 31 P(n, γ) 32 P reaction. The anhydrous KH 2 PO 4 , as a target material, was irradiated in Tehran Nuclear Research Reactor with a neutron flux of 2.5x10 13 n/cm 2 .sec. The P-32 produced as a result of Szilard-Chalmers effect was isolated from the target by a strong anion exchange resin, (Dowex - X 8). The quality control of the product shows a high chemical, and radiochemical purity (>98%) and the increase specific activity depends on the irradiation time

  19. n-p Short-Range Correlations from (p,2p+n) Measurements

    Science.gov (United States)

    Tang, A.; Watson, J. W.; Aclander, J.; Alster, J.; Asryan, G.; Averichev, Y.; Barton, D.; Baturin, V.; Bukhtoyarova, N.; Carroll, A.; Gushue, S.; Heppelmann, S.; Leksanov, A.; Makdisi, Y.; Malki, A.; Minina, E.; Navon, I.; Nicholson, H.; Ogawa, A.; Panebratsev, Yu.; Piasetzky, E.; Schetkovsky, A.; Shimanskiy, S.; Zhalov, D.

    2003-01-01

    We studied the 12C(p,2p+n) reaction at beam momenta of 5.9, 8.0, and 9.0 GeV/c. For quasielastic (p,2p) events pf, the momentum of the knocked-out proton before the reaction, was compared (event by event) with pn, the coincident neutron momentum. For |pn|>kF=0.220 GeV/c (the Fermi momentum) a strong back-to-back directional correlation between pf and pn was observed, indicative of short-range n-p correlations. From pn and pf we constructed the distributions of c.m. and relative motion in the longitudinal direction for correlated pairs. We also determined that 49±13% of events with |pf|>kF had directionally correlated neutrons with |pn|>kF.

  20. Multipole decomposition analysis of the 27Al, 90Zr, 208Pb(p, n) reactions at 295 MeV

    International Nuclear Information System (INIS)

    Wakasa, T.; Greenfield, M.B.; Koori, N.; Okihana, A.; Hatanaka, K.

    1996-01-01

    Differential cross sections at θ lab between 0 and 15 and the polarization transfer D NN at zero degrees for the 27 Al, 90 Zr, 208 Pb(p,n) reactions are measured at a bombarding energy of 295 MeV. A multipole decomposition (MD) technique is applied to extract L=0, L=1, and L≥2 contributions to the cross sections. The summed Gamow-Teller strength B(GT) is compared with shell-model calculations for the 27 Al(p,n) and 90 Zr(p,n) reactions. The usefulness of the polarization transfer observable in the MD analysis is discussed. (orig.)

  1. Josephson tunnel junction microwave attenuator

    DEFF Research Database (Denmark)

    Koshelets, V. P.; Shitov, S. V.; Shchukin, A. V.

    1993-01-01

    A new element for superconducting electronic circuitry-a variable attenuator-has been proposed, designed, and successfully tested. The principle of operation is based on the change in the microwave impedance of a superconductor-insulator-superconductor (SIS) Josephson tunnel junction when dc biased...... at different points in the current-voltage characteristic. Both numerical calculations based on the Tien-Gordon theory and 70-GHz microwave experiments have confirmed the wide dynamic range (more than 15-dB attenuation for one stage) and the low insertion loss in the ''open'' state. The performance of a fully...

  2. Loss models for long Josephson junctions

    DEFF Research Database (Denmark)

    Olsen, O. H.; Samuelsen, Mogens Rugholm

    1984-01-01

    A general model for loss mechanisms in long Josephson junctions is presented. An expression for the zero-field step is found for a junction of overlap type by means of a perturbation method. Comparison between analytic solution and perturbation result shows good agreement.......A general model for loss mechanisms in long Josephson junctions is presented. An expression for the zero-field step is found for a junction of overlap type by means of a perturbation method. Comparison between analytic solution and perturbation result shows good agreement....

  3. Harmonic synchronization in resistively coupled Josephson junctions

    International Nuclear Information System (INIS)

    Blackburn, J.A.; Gronbech-Jensen, N.; Smith, H.J.T.

    1994-01-01

    The oscillations of two resistively coupled Josephson junctions biased only by a single dc current source are shown to lock harmonically in a 1:2 mode over a significant range of bias current, even when the junctions are identical. The dependence of this locking on both junction and coupling parameters is examined, and it is found that, for this particular two-junction configuration, 1:1 locking can never occur, and also that a minimum coupling coefficient is needed to support harmonic locking. Some issues related to subharmonic locking are also discussed

  4. Superconducting flux qubits with π-junctions

    International Nuclear Information System (INIS)

    Shcherbakova, Anastasia

    2014-01-01

    In this thesis, we present a fabrication technology of Al/AlO x /Al Josephson junctions on Nb pads. The described technology gives the possibility of combining a variety of Nb-based superconducting circuits, like pi-junction phase-shifters with sub-micron Al/AlO x /Al junctions. Using this approach, we fabricated hybrid Nb/Al flux qubits with and without the SFS-junctions and studied dispersive magnetic field response of these qubits as well as their spectroscopy characteristics.

  5. The 152Sm(p,n) reaction and its astrophysical importance

    International Nuclear Information System (INIS)

    Pohl, Moritz

    2014-01-01

    Within the nucleosynthetic processes of the slow neutron-capture reaction network (called the s process) the so called branching points, unstable isotopes where different nuclear reactions are competing, are important to understand. For modeling and calculating the nucleosynthesis and compare the resulting abundances to the observed ones, it is indispensable to know the branching ratios as well as the corresponding cross sections. A great challenge in measuring those rates in experiments may be the radioactivity of the isotopes involved, which can make it nearly impossible to manufacture the needed targets. In addition, in stellar environments the excited states of isotopes can be in equilibrium with the ground state, affecting the half-lives and the branching ratios significantly. The isotope 152 Eu is such a branching point, with neutron captures and β-decays competing. Those challenges were approached in the s405 experiment performed at the GSI Helmholtzzentrum fuer Schwerionenforschung GmbH: the challenge the challenge of the radioactivity can be approached by experiments carried out in inverse kinematics with radioactive beams, solving the problem of unstable targets. Also a reversed reaction was used to access the excited states of the studied isotope. The performed 152 Sm(p,n) 152 Eu is a pioneering attempt to use those methods on heavy ions. The (p,n) reaction was used as a substitute for electron capture, the focus lies on reactions with low-momentum transfers, resulting in the emission of low-energy neutrons. The new developed low-energy detector array LENA was put to test for the fist time in the s405 experiment.

  6. Formation of shallow junctions for VLSI by ion implantation and rapid thermal annealing

    International Nuclear Information System (INIS)

    Oeztuerk, M.C.

    1988-01-01

    In this work, several techniques were studied to form shallow junctions in silicon by ion implantation. These include ion implantation through thin layers of silicon dioxide and ion implantation through a thick polycrystalline silicon layer. These techniques can be used to reduce the junction depth. Their main disadvantage is dopant loss in the surface layer. As an alternative, preamorphization of the Si substrate prior to boron implantation to reduce boron channeling was investigated. The disadvantage of preamorphization is the radiation damage introduced into the Si substrate using the implant. Preamorphization by silicon self-implantation has been studied before. The goal of this study was to test Ge as an alternative amorphizing agent. It was found that good-quality p + -n junctions can be formed by both boron and BF 2 ion implantation into Ge-preamorphized Si provided that the preamorphization conditions are optimized. If the amorphous crystalline interface is sufficiently close to the surface, it is possible to completely remove the end-of-range damage. If these defects are not removed and are left in the depletion region, they can result in poor-quality, leaky junctions

  7. Synthesis and reactivity of TADDOL-based chiral Fe(II) PNP pincer complexes-solution equilibria between κ(2)P,N- and κ(3)P,N,P-bound PNP pincer ligands.

    Science.gov (United States)

    Holzhacker, Christian; Stöger, Berthold; Carvalho, Maria Deus; Ferreira, Liliana P; Pittenauer, Ernst; Allmaier, Günter; Veiros, Luis F; Realista, Sara; Gil, Adrià; Calhorda, Maria José; Müller, Danny; Kirchner, Karl

    2015-08-07

    Treatment of anhydrous FeX2 (X = Cl, Br) with 1 equiv. of the asymmetric chiral PNP pincer ligands PNP-R,TAD (R = iPr, tBu) with an R,R-TADDOL (TAD) moiety afforded complexes of the general formula [Fe(PNP)X2]. In the solid state these complexes adopt a tetrahedral geometry with the PNP ligand coordinated in κ(2)P,N-fashion, as shown by X-ray crystallography and Mössbauer spectroscopy. Magnetization studies led to a magnetic moment very close to 4.9μB reflecting the expected four unpaired d-electrons (quintet ground state). In solution there are equilibria between [Fe(κ(3)P,N,P-PNP-R,TAD)X2] and [Fe(κ(2)P,N-PNP-R,TAD)X2] complexes, i.e., the PNP-R,TAD ligand is hemilabile. At -50 °C these equilibria are slow and signals of the non-coordinated P-TAD arm of the κ(2)P,N-PNP-R,TAD ligand can be detected by (31)P{(1)H} NMR spectroscopy. Addition of BH3 to a solution of [Fe(PNP-iPr,TAD)Cl2] leads to selective boronation of the pendant P-TAD arm shifting the equilibrium towards the four-coordinate complex [Fe(κ(2)P,N-PNP-iPr,TAD(BH3))Cl2]. DFT calculations corroborate the existence of equilibria between four- and five-coordinated complexes. Addition of CO to [Fe(PNP-iPr,TAD)X2] in solution yields the diamagnetic octahedral complexes trans-[Fe(κ(3)P,N,P-PNP-iPr,TAD)(CO)X2], which react further with Ag(+) salts in the presence of CO to give the cationic complexes trans-[Fe(κ(3)P,N,P-PNP-iPr,TAD)(CO)2X](+). CO addition most likely takes place at the five coordinate complex [Fe(κ(3)P,N,P-PNP-iPr,TAD)X2]. The mechanism for the CO addition was also investigated by DFT and the most favorable path obtained corresponds to the rearrangement of the pincer ligand first from a κ(2)P,N- to a κ(3)P,N,P-coordination mode followed by CO coordination to [Fe(κ(3)P,N,P-PNP-iPr,TAD)X2]. Complexes bearing tBu substituents do not react with CO. Moreover, in the solid state none of the tetrahedral complexes are able to bind CO.

  8. Temperature-sensitive junction transformations for mid-wavelength HgCdTe photovoltaic infrared detector arrays by laser beam induced current microscope

    Energy Technology Data Exchange (ETDEWEB)

    Qiu, Weicheng [College of Photoelectric Science and Engineering, National University of Defense Technology, Changsha, Hunan 410073 (China); National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083 (China); Hu, Weida, E-mail: wdhu@mail.sitp.ac.cn; Lin, Tie; Yin, Fei; Zhang, Bo; Chen, Xiaoshuang; Lu, Wei [National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083 (China); Cheng, Xiang' ai, E-mail: xiang-ai-cheng@126.com; Wang, Rui [College of Photoelectric Science and Engineering, National University of Defense Technology, Changsha, Hunan 410073 (China)

    2014-11-10

    In this paper, we report on the disappearance of the photosensitive area extension effect and the unusual temperature dependence of junction transformation for mid-wavelength, n-on-p HgCdTe photovoltaic infrared detector arrays. The n-type region is formed by B{sup +} ion implantation on Hg-vacancy-doped p-type HgCdTe. Junction transformations under different temperatures are visually captured by a laser beam induced current microscope. A physical model of temperature dependence on junction transformation is proposed and demonstrated by using numerical simulations. It is shown that Hg-interstitial diffusion and temperature activated defects jointly lead to the p-n junction transformation dependence on temperature, and the weaker mixed conduction compared with long-wavelength HgCdTe photodiode contributes to the disappearance of the photosensitive area extension effect in mid-wavelength HgCdTe infrared detector arrays.

  9. Laser processing for bevel termination of high voltage pn junction in SiC

    International Nuclear Information System (INIS)

    Kubiak, A; Ruta, Ł; Rosowski, A; French, P

    2016-01-01

    Proper edge termination of the p-n junction in silicon carbide is a key requirement in the fabrication of discrete devices able to withstand high voltages in reverse polarization. Due to the hardness of SiC the creation of the bevel termination remains difficult using mechanical machining. The use of laser beam sources with medium wavelength (532 nm) gives new possibilities in the machining of the silicon carbide. The paper presents the fabrication of the bevel termination structure in SiC using a green DPSS laser equipped with scanner and dedicated rotating sample holder. Characterization of the resulting structures proves the high potential of the proposed approach. (paper)

  10. Preliminary Experimental Study on Pressure Loss Coefficients of Exhaust Manifold Junction

    Directory of Open Access Journals (Sweden)

    Xiao-lu Lu

    2014-01-01

    Full Text Available The flow characteristic of exhaust system has an important impact on inlet boundary of the turbine. In this paper, high speed flow in a diesel exhaust manifold junction was tested and simulated. The pressure loss coefficient of the junction flow was analyzed. The steady experimental results indicated that both of static pressure loss coefficients L13 and L23 first increased and then decreased with the increase of mass flow ratio of lateral branch and public manifold. The total pressure loss coefficient K13 always increased with the increase of mass flow ratio of junctions 1 and 3. The total pressure loss coefficient K23 first increased and then decreased with the increase of mass flow ratio of junctions 2 and 3. These pressure loss coefficients of the exhaust pipe junctions can be used in exhaust flow and turbine inlet boundary conditions analysis. In addition, simulating calculation was conducted to analyze the effect of branch angle on total pressure loss coefficient. According to the calculation results, total pressure loss coefficient was almost the same at low mass flow rate of branch manifold 1 but increased with lateral branch angle at high mass flow rate of branch manifold 1.

  11. Lateral collateral ligament (image)

    Science.gov (United States)

    The lateral collateral ligament connects the end of the femur (thigh) to the top of the fibula (the thin bone that runs next to the shin bone). The lateral collateral ligament provides stability against varus stress. Varus stress ...

  12. -MoS2 Lateral Heterojunctions

    KAUST Repository

    Li, Ming-yang

    2018-02-28

    2D layered heterostructures have attracted intensive interests due to their unique optical, transport, and interfacial properties. The laterally stitched heterojunction based on dissimilar 2D transition metal dichalcogenides forms an intrinsic p–n junction without the necessity of applying an external voltage. However, no scalable processes are reported to construct the devices with such lateral heterostructures. Here, a scalable strategy, two-step and location-selective chemical vapor deposition, is reported to synthesize self-aligned WSe2–MoS2 monolayer lateral heterojunction arrays and demonstrates their light-emitting devices. The proposed fabrication process enables the growth of high-quality interfaces and the first successful observation of electroluminescence at the WSe2–MoS2 lateral heterojunction. The electroluminescence study has confirmed the type-I alignment at the interface rather than commonly believed type-II alignment. This self-aligned growth process paves the way for constructing various 2D lateral heterostructures in a scalable manner, practically important for integrated 2D circuit applications.

  13. Trap-mediated electronic transport properties of gate-tunable pentacene/MoS2 p-n heterojunction diodes.

    Science.gov (United States)

    Kim, Jae-Keun; Cho, Kyungjune; Kim, Tae-Young; Pak, Jinsu; Jang, Jingon; Song, Younggul; Kim, Youngrok; Choi, Barbara Yuri; Chung, Seungjun; Hong, Woong-Ki; Lee, Takhee

    2016-11-10

    We investigated the trap-mediated electronic transport properties of pentacene/molybdenum disulphide (MoS 2 ) p-n heterojunction devices. We observed that the hybrid p-n heterojunctions were gate-tunable and were strongly affected by trap-assisted tunnelling through the van der Waals gap at the heterojunction interfaces between MoS 2 and pentacene. The pentacene/MoS 2 p-n heterojunction diodes had gate-tunable high ideality factor, which resulted from trap-mediated conduction nature of devices. From the temperature-variable current-voltage measurement, a space-charge-limited conduction and a variable range hopping conduction at a low temperature were suggested as the gate-tunable charge transport characteristics of these hybrid p-n heterojunctions. Our study provides a better understanding of the trap-mediated electronic transport properties in organic/2-dimensional material hybrid heterojunction devices.

  14. Technical advances in neutron polarimetry and studies of the (p,n) reaction in /sup 13/C

    Energy Technology Data Exchange (ETDEWEB)

    Videla, N G

    1985-01-01

    The asymmetry in the /sup 4/He(p,n vector)/sup 4/He reaction has been measured at three different incident neutron energies: 19.40; 22.85 and 27.31 MeV, and 120/sup 0/ from forward direction. Values of the asymmetry have been used to calculate the polarization of fast neutrons produced in the /sup 13/C(p,n vector)/sup 13/N. The /sup 13/C(p,n vector)/sup 13/N reaction was studied as part of a program being undertaken at the University of Manitoba Cyclotron Laboratory to study (p,n) reactions linking isobaric analog states of mirror nuclei in the energy range of 22 to 50 MeV. The study involves a comparison of the proton analyzing power A(theta), in the reaction /sup 13/C(vector p,n)/sup 13/N to the neutron polarization in the inverse reaction /sup 13/C(p,n vector)/sup 13/N. The importance of the comparison between these two observables is based in Conzett's theorem for time reversed reactions, the theorem states that the proton analyzing power in the reaction /sup 13/C(vector p,n)/sup 13/N is equal to the neutron polarization in the reaction /sup 13/C(p,n vector)/sup 13/N provided the reaction proceeds between members of an isospin doublet and when charge symmetry and time reversal invariance hold exactly. However, isospin symmetry is broken by the Coulomb interaction. So comparison of these two observables should yield information of the breaking of isospin by the Coulomb force.

  15. Energy dependence of V/sub tau/ in the (p,n) reaction 10 to 30 MeV

    International Nuclear Information System (INIS)

    Poppe, C.H.

    1979-03-01

    Because of the relative insensitivity of the (p,n) analog reaction to details of the nuclear wave functions, a simple description is given for the studied reaction 92 Mo(p,n) at 26 MeV in which a proton is created and a neutron destroyed in the 1/sub g9/2/ orbit. The differential and angle-integrated analog cross sections and the effective potential for IF range are plotted. 27 references

  16. Linker-dependent Junction Formation Probability in Single-Molecule Junctions

    Energy Technology Data Exchange (ETDEWEB)

    Yoo, Pil Sun; Kim, Taekyeong [HankukUniversity of Foreign Studies, Yongin (Korea, Republic of)

    2015-01-15

    We compare the junction formation probabilities of single-molecule junctions with different linker molecules by using a scanning tunneling microscope-based break-junction technique. We found that the junction formation probability varies as SH > SMe > NH2 for the benzene backbone molecule with different types of anchoring groups, through quantitative statistical analysis. These results are attributed to different bonding forces according to the linker groups formed with Au atoms in the electrodes, which is consistent with previous works. Our work allows a better understanding of the contact chemistry in the metal.molecule junction for future molecular electronic devices.

  17. Cavity syncronisation of underdamped Josephson junction arrays

    DEFF Research Database (Denmark)

    Barbara, P.; Filatrella, G.; Lobb, C.

    2003-01-01

    the junctions in the array and an electromagnetic cavity. Here we show that a model of a one-dimensional array of Josephson junctions coupled to a resonator can produce many features of the coherent be havior above threshold, including coherent radiation of power and the shape of the array current...

  18. Functional anatomy of the human ureterovesical junction

    NARCIS (Netherlands)

    Roshani, H.; Dabhoiwala, N. F.; Verbeek, F. J.; Lamers, W. H.

    1996-01-01

    BACKGROUND: The valve function of the ureterovesical-junction (UVJ) is responsible for protection of the low pressure upper urinary tract from the refluxing of urine from the bladder. Controversy about the microanatomy of the human ureterovesical-junction persists. METHODS: Ten (3 male and 7 female)

  19. Spin, Vibrations and Radiation in Superconducting Junctions

    NARCIS (Netherlands)

    Padurariu, C.

    2013-01-01

    This thesis presents the theoretical study of superconducting transport in several devices based on superconducting junctions. The important feature of these devices is that the transport properties of the junction are modified by the interaction with another physical system integrated in the

  20. Gap junctions and connexin-interacting proteins

    NARCIS (Netherlands)

    Giepmans, Ben N G

    2004-01-01

    Gap junctions form channels between adjacent cells. The core proteins of these channels are the connexins. Regulation of gap junction communication (GJC) can be modulated by connexin-associating proteins, such as regulatory protein phosphatases and protein kinases, of which c-Src is the

  1. impairs gap junction function causing congenital cataract

    Indian Academy of Sciences (India)

    Navya

    2017-03-24

    Mar 24, 2017 ... experiment showed a lower dye diffusion distance of Cx46 V44M cells, ... Studies of connexins show that channel gating and permeability .... have found that connexin assembled into gap junction plaques is not soluble in 1% ..... high glucose reduces gap junction activity in microvascular endothelial cells.

  2. impairs gap junction function causing congenital cataract

    Indian Academy of Sciences (India)

    LIJUAN CHEN

    2017-12-20

    Dec 20, 2017 ... showed a lower dye diffusion distance of Cx46 V44M cells, which indicates that the gap junction intercellular ... permeability could be affected by alterations of charged residues of .... bled into gap junction plaques is not soluble in 1% Triton ..... regulation of connexin 43 expression by high glucose reduces.

  3. One-dimensional breakdown voltage model of SOI RESURF lateral power device based on lateral linearly graded approximation

    International Nuclear Information System (INIS)

    Zhang Jun; Guo Yu-Feng; Xu Yue; Lin Hong; Yang Hui; Hong Yang; Yao Jia-Fei

    2015-01-01

    A novel one-dimensional (1D) analytical model is proposed for quantifying the breakdown voltage of a reduced surface field (RESURF) lateral power device fabricated on silicon on an insulator (SOI) substrate. We assume that the charges in the depletion region contribute to the lateral PN junctions along the diagonal of the area shared by the lateral and vertical depletion regions. Based on the assumption, the lateral PN junction behaves as a linearly graded junction, thus resulting in a reduced surface electric field and high breakdown voltage. Using the proposed model, the breakdown voltage as a function of device parameters is investigated and compared with the numerical simulation by the TCAD tools. The analytical results are shown to be in fair agreement with the numerical results. Finally, a new RESURF criterion is derived which offers a useful scheme to optimize the structure parameters. This simple 1D model provides a clear physical insight into the RESURF effect and a new explanation on the improvement in breakdown voltage in an SOI RESURF device. (paper)

  4. Fabrication of Josephson Junction without shadow evaporation

    Science.gov (United States)

    Wu, Xian; Ku, Hsiangsheng; Long, Junling; Pappas, David

    We developed a new method of fabricating Josephson Junction (Al/AlOX/Al) without shadow evaporation. Statistics from room temperature junction resistance and measurement of qubits are presented. Unlike the traditional ``Dolan Bridge'' technique, this method requires two individual lithographies and straight evaporations of Al. Argon RF plasma is used to remove native AlOX after the first evaporation, followed by oxidation and second Al evaporation. Junction resistance measured at room temperature shows linear dependence on Pox (oxidation pressure), √{tox} (oxidation time), and inverse proportional to junction area. We have seen 100% yield of qubits made with this method. This method is promising because it eliminates angle dependence during Junction fabrication, facilitates large scale qubits fabrication.

  5. Overlap junctions for high coherence superconducting qubits

    Science.gov (United States)

    Wu, X.; Long, J. L.; Ku, H. S.; Lake, R. E.; Bal, M.; Pappas, D. P.

    2017-07-01

    Fabrication of sub-micron Josephson junctions is demonstrated using standard processing techniques for high-coherence, superconducting qubits. These junctions are made in two separate lithography steps with normal-angle evaporation. Most significantly, this work demonstrates that it is possible to achieve high coherence with junctions formed on aluminum surfaces cleaned in situ by Ar plasma before junction oxidation. This method eliminates the angle-dependent shadow masks typically used for small junctions. Therefore, this is conducive to the implementation of typical methods for improving margins and yield using conventional CMOS processing. The current method uses electron-beam lithography and an additive process to define the top and bottom electrodes. Extension of this work to optical lithography and subtractive processes is discussed.

  6. Quantum synchronization effects in intrinsic Josephson junctions

    International Nuclear Information System (INIS)

    Machida, M.; Kano, T.; Yamada, S.; Okumura, M.; Imamura, T.; Koyama, T.

    2008-01-01

    We investigate quantum dynamics of the superconducting phase in intrinsic Josephson junctions of layered high-T c superconductors motivated by a recent experimental observation for the switching rate enhancement in the low temperature quantum regime. We pay attention to only the capacitive coupling between neighboring junctions and perform large-scale simulations for the Schroedinger equation derived from the Hamiltonian considering the capacitive coupling alone. The simulation focuses on an issue whether the switching of a junction induces those of the other junctions or not. The results reveal that the superconducting phase dynamics show synchronous behavior with increasing the quantum character, e.g., decreasing the junction plane area and effectively the temperature. This is qualitatively consistent with the experimental result

  7. Performance enhancement of Ge-on-Insulator tunneling FETs with source junctions formed by low-energy BF2 ion implantation

    Science.gov (United States)

    Katoh, Takumi; Matsumura, Ryo; Takaguchi, Ryotaro; Takenaka, Mitsuru; Takagi, Shinichi

    2018-04-01

    To clarify the process of formation of source regions of high-performance Ge n-channel tunneling field-effect transistors (TFETs), p+-n junctions formed by low-energy ion implantation (I/I) of BF2 atoms are characterized. Here, the formation of p+-n junctions with steep B profiles and low junction leakage is a key issue. The steepness of 5.7 nm/dec in profiles of B implanted into Ge is obtained for BF2 I/I at 3 keV with a dose of 4 × 1014 cm-2. Ge-on-insulator (GOI) n-TFETs with the source tunnel junctions formed by low-energy B and BF2 I/I are fabricated on GOI substrates and the device operation is confirmed. Although the performance at room temperature is significantly degraded by the source junction leakage current, an I on/I off ratio of 105 and the minimum sub-threshold swing (S.S.) of 130 mV/dec are obtained at 10 K. It is found that GOI n-TFETs with steeper B profiles formed by BF2 I/I have led to higher on current and a lower sub-threshold slope, demonstrating the effectiveness of steep B profiles in enhancing the GOI TFET performance.

  8. Precise measurements of the thick target neutron yields of the 7Li(p,n) reaction

    International Nuclear Information System (INIS)

    Matysiak, W.; Prestwich, W.V.; Byun, S.H.

    2011-01-01

    Thick target neutron yield of the 7 Li(p,n) 7 Be reaction was measured in the proton energy range from 1.95 to 2.3 MeV by determining induced activity of the 7 Be. A HPGe detector was used to detect the 478 keV gamma-rays emitted through 7 Be decay. A series of irradiations with nominal proton energies of 1.95, 2.0, 2.1, 2.2, and 2.3 MeV were carried out. In an independent experiment, raw neutron spectra were collected by a 3 He ion chamber for the same series of proton energies. From the raw neutron spectra, it was noted, that the effective proton energies were lower than the nominal by 50-58 keV. After corrections for the proton energy offsets were applied, the measured neutron yields matched the analytically calculated yields within 20%. Long term stability of neutron yield was tested at two nominal proton energies, 2.1 and 1.95 MeV over an experimental period of one year. The results show that the yield at 2.1 MeV was stable within rmse variation coefficient of 4.7% and remained consistent even when the lithium target was replaced, whereas at 1.95 MeV, the maximum fluctuations reached a factor of 10.

  9. Depletion layer characteristics and photovoltaic energy conversion in organic P-N heterojunctions

    Energy Technology Data Exchange (ETDEWEB)

    Chamberlain, G A

    1983-11-01

    The depletion layer characteristics of an organic p-n heterojunction were investigated by measuring the temperature variation of the capacitance, rectification and photovoltaic short-circuit current and open-circuit voltage. The cell consisted of indium-tin-oxide-coated glass/n-type malachite green/p-type merocyanine/Au exposed to chlorine vapour, in the absence of air, to effect the marked rectification and photovoltaic properties observed. Capacitance measurements indicate that a depletion layer of about 65 nm and a barrier height of about 0.8 eV are formed between the two dyes. The forward dark current is dominated by electron tunnelling from the malachite green to the merocyanine. Using an asymmetric trapping model, the reverse saturation current was explained as the thermally activated emission of electrons from filled traps at the Fermi energy of the merocyanine to empty traps in the malachite green over a barrier of 0.72+-0.1 eV. When the cell is working in the photovoltaic mode, the photocurrent is limited by the poor carrier photogeneration efficiency in the malachite green.

  10. Rational hybrid modulation of P, N dual-doped holey graphene for high-performance supercapacitors

    Science.gov (United States)

    Nazarian-Samani, Masoud; Haghighat-Shishavan, Safa; Nazarian-Samani, Mahboobeh; Kim, Myeong-Seong; Cho, Byung-Won; Oh, Si-Hyoung; Kashani-Bozorg, Seyed Farshid; Kim, Kwang-Bum

    2017-12-01

    A P, N dual-doped holey graphene (PNHG) material is prepared by a scalable, facile synthetic approach, using a mixture of glucose, dicyandiamide (DCDA), and phosphoric acid (H3PO4). H3PO4 successfully functions as an "acid catalyst" to encourage the uniform breakage of C=C bonds to create large, localized perforations over the graphene monolith. Further acid treatment and annealing introduce in-plane holes. The correlation between the capacitance of the PNHG and its structural parameters during the fabrication process is comprehensively evaluated. A thermally induced sp2→sp3 transformation occurs at high temperatures because of the substantial loss of graphitic sp2-type carbons, together with a dramatic reduction in capacitance. The target PNHG-400 electrode material delivers exceptionally high gravimetric capacitance (235.5 F g-1 at 0.5 A g-1), remarkable rate capability (84.8% at 70 A g-1), superior capacitance retention (93.2 and 92.7% at 10 and 50 A g-1 over 25000 cycles, respectively), and acceptable volumetric capacitance due to moderate density, when it is used with organic electrolytes in the voltage range between 0 and 3 V. These results suggest a pioneering defect-engineered strategy to fabricate dual-doped holey graphene with valuable structural properties for high-performance electric double layer supercapacitors, which could be used in next-generation energy storage applications.

  11. p/n-Polarity of thiophene oligomers in photovoltaic cells: role of molecular vs. supramolecular properties.

    Science.gov (United States)

    Ghosh, Tanwistha; Gopal, Anesh; Saeki, Akinori; Seki, Shu; Nair, Vijayakumar C

    2015-04-28

    Molecular and supramolecular properties play key roles in the optoelectronic properties and photovoltaic performances of organic materials. In the present work, we show how small changes in the molecular structure affect such properties, which in turn control the intrinsic and fundamental properties such as the p/n-polarity of organic semiconductors in bulk-heterojunction solar cells. Herein, we designed and synthesized two acceptor-donor-acceptor type semiconducting thiophene oligomers end-functionalized with oxazolone/isoxazolone derivatives (OT1 and OT2 respectively). The HOMO-LUMO energy levels of both derivatives were found to be positioned in such a way that they can act as electron acceptors to P3HT and electron donors to PCBM. However, OT1 functions as a donor (with PCBM) and OT2 as an acceptor (with P3HT) in BHJ photovoltaic cells, and their reverse roles results in either no or poor performance of the cells. Detailed studies using UV-vis absorption and fluorescence spectroscopy, time-correlated single photon counting, UV-photoelectron spectroscopy, density functional theory calculations, X-ray diffraction, and thermal gravimetric analysis proved that both molecular and supramolecular properties contributed equally but in a contrasting manner to the abovementioned observation. The obtained results were further validated by flash-photolysis time-resolved microwave conductivity studies which showed an excellent correlation between the structure, property, and device performances of the materials.

  12. Simplified P_n transport core calculations in the Apollo3 system

    International Nuclear Information System (INIS)

    Baudron, Anne-Marie; Lautard, Jean-Jacques

    2011-01-01

    This paper describes the development of two different neutronics core solvers based on the Simplified P_N transport (SP_N) approximation developed in the context of a new generation nuclear reactor computational system, APOLLO3. Two different approaches have been used. The first one solves the standard SPN system. In the second approach, the SP_N equations are solved as diffusion equations by treating the SP_N flux harmonics like pseudo energy groups, obtained by a change of variable. These two methods have been implemented for Cartesian and hexagonal geometries in the kinetics solver MINOS. The numerical approximation is based on the mixed dual finite formulation and the discretization uses the Raviart-Thomas-Nedelec finite elements. For the unstructured geometries, the SP_N equations are treated by the SN transport solver MINARET by considering the second SP_N approach. The MINARET solver is based on discontinuous Galerkin finite element approximation on cylindrical unstructured meshes composed of a set of conforming triangles for the radial direction. Numerical applications are presented for both solvers in different core configurations (the Jules Horowitz research reactor (JHR) and the Generation IV fast reactor project ESFR). (author)

  13. Admittance studies of neutron-irradiated silicon p+-n diodes

    International Nuclear Information System (INIS)

    Tokuda, Y.; Usami, A.

    1977-01-01

    Defects introduced in n-type silicon by neutron irradiation were investigated by measuring the conductance (G) and the capacitance (C) of p + -n diodes. The method of the determination of the energy level, capture cross section, and concentration for each defect from the G-T and C-T curves for various frequencies was presented. Assuming that capture cross sections are independent of temperature, the energy levels of E/sub c/-0.15 eV, E/sub c/-0.22 eV, and E/sub c/-0.39 eV were obtained. For these defects, the calculated values of the electron capture cross section were 2.6 x 10 -14 , 3.7 x 10 -15 , and 2.0 x 10 -14 cm 2 , respectively. The introduction rate of defects for E/sub c/-0.39 eV was twice that for E/sub c/-0.22 eV which was twice that for E/sub c/-0.15 eV. Comparing with other published data, the energy levels of E/sub c/-0.15 eV and E/sub c/-0.39 eV were found to be correlated with the A center and the divacancy, respectively

  14. The interest in studying beauty baryon in pN interactions at HERA

    International Nuclear Information System (INIS)

    Albrecht, H.; Fridman, A.; Mai, O.; Oest, T.; Schmidt-Parzefall, W.; Kinnunen, R.

    1993-11-01

    We present some reasons for studying beauty baryons (N b ) produced in pN interactions. We also investigate the possibilities of using a suggested HERA experiment with an internal target in order to observe the beauty baryons. Their triggering process allows the study of N b decays having a J/Ψ in the final state. The estimates of the N b production rates and branching ratios give the possibility of analyzing Λ b → ΛJ/Ψ and Ζ b → ΖJ/Ψ channels as well as their charged conjugated processes. The measurements of the decay parameter and the polarization of N b have been considered. It was also suggested to measure the Λ b → l - νp (b →u) and Λ b → l - νΛ c + (b → c) channels in order to have a new estimate of the ratio of the CKM matrix elements vertical stroke V ub /V cb vertical stroke . (orig.)

  15. Macroscopic quantum tunneling in Josephson tunnel junctions and Coulomb blockade in single small tunnel junctions

    International Nuclear Information System (INIS)

    Cleland, A.N.

    1991-04-01

    Experiments investigating the process of macroscopic quantum tunneling in a moderately-damped, resistively shunted, Josephson junction are described, followed by a discussion of experiments performed on very small capacitance normal-metal tunnel junctions. The experiments on the resistively-shunted Josephson junction were designed to investigate a quantum process, that of the tunneling of the Josephson phase variable under a potential barrier, in a system in which dissipation plays a major role in the dynamics of motion. All the parameters of the junction were measured using the classical phenomena of thermal activation and resonant activation. Theoretical predictions are compared with the experimental results, showing good agreement with no adjustable parameters; the tunneling rate in the moderately damped (Q ∼ 1) junction is seen to be reduced by a factor of 300 from that predicted for an undamped junction. The phase is seen to be a good quantum-mechanical variable. The experiments on small capacitance tunnel junctions extend the measurements on the larger-area Josephson junctions from the region in which the phase variable has a fairly well-defined value, i.e. its wavefunction has a narrow width, to the region where its value is almost completely unknown. The charge on the junction becomes well-defined and is predicted to quantize the current through the junction, giving rise to the Coulomb blockade at low bias. I present the first clear observation of the Coulomb blockade in single junctions. The electrical environment of the tunnel junction, however, strongly affects the behavior of the junction: higher resistance leads are observed to greatly sharpen the Coulomb blockade over that seen with lower resistance leads. I present theoretical descriptions of how the environment influences the junctions; comparisons with the experimental results are in reasonable agreement

  16. Resonance Transport of Graphene Nanoribbon T-Shaped Junctions

    International Nuclear Information System (INIS)

    Xiao-Lan, Kong; Yong-Jian, Xiong

    2010-01-01

    We investigate the transport properties of T-shaped junctions composed of armchair graphene nanoribbons of different widths. Three types of junction geometries are considered. The junction conductance strongly depends on the atomic features of the junction geometry. When the shoulders of the junction have zigzag type edges, sharp conductance resonances usually appear in the low energy region around the Dirac point, and a conductance gap emerges. When the shoulders of the junction have armchair type edges, the conductance resonance behavior is weakened significantly, and the metal-metal-metal junction structures show semimetallic behaviors. The contact resistance also changes notably due to the various interface geometries of the junction

  17. Ge-on-insulator tunneling FET with abrupt source junction formed by utilizing snowplow effect of NiGe

    Science.gov (United States)

    Matsumura, Ryo; Katoh, Takumi; Takaguchi, Ryotaro; Takenaka, Mitsuru; Takagi, Shinichi

    2018-04-01

    Tunneling field-effect transistors (TFETs) attract much attention for use in realizing next-generation low-power processors. In particular, Ge-on-insulator (GOI) TFETs are expected to realize low power operation with a high on-current/off-current (I on/I off) ratio, owing to their narrow bandgap. Here, to improve the performance of GOI-TFETs, a source junction with a high doping concentration and an abrupt impurity profile is essential. In this study, a snowplow effect of NiGe combined with low-energy BF2 + implantation has been investigated to realize an abrupt p+/n Ge junction for GOI n-channel TFETs. By optimizing the Ni thickness to form NiGe (thickness: 4 nm), an abrupt junction with a B profile abruptness of ˜5 nm/dec has been realized with a high doping concentration of around 1021 cm-3. The operation of GOI n-TFETs with this source junction having the abrupt B profile has been demonstrated, and the improvement of TFET properties such as the I on/I off ratio from 311 to 743 and the subthreshold slope from 368 to 239 mV/dec has been observed. This junction formation technology is attractive for enhancing the TFET performance.

  18. Topological Phases in Graphene Nanoribbons: Junction States, Spin Centers, and Quantum Spin Chains

    Science.gov (United States)

    Cao, Ting; Zhao, Fangzhou; Louie, Steven G.

    2017-08-01

    We show that semiconducting graphene nanoribbons (GNRs) of different width, edge, and end termination (synthesizable from molecular precursors with atomic precision) belong to different electronic topological classes. The topological phase of GNRs is protected by spatial symmetries and dictated by the terminating unit cell. We have derived explicit formulas for their topological invariants and shown that localized junction states developed between two GNRs of distinct topology may be tuned by lateral junction geometry. The topology of a GNR can be further modified by dopants, such as a periodic array of boron atoms. In a superlattice consisting of segments of doped and pristine GNRs, the junction states are stable spin centers, forming a Heisenberg antiferromagnetic spin 1 /2 chain with tunable exchange interaction. The discoveries here not only are of scientific interest for studies of quasi-one-dimensional systems, but also open a new path for design principles of future GNR-based devices through their topological characters.

  19. Boudin trafficking reveals the dynamic internalisation of specific septate junction components in Drosophila.

    Science.gov (United States)

    Tempesta, Camille; Hijazi, Assia; Moussian, Bernard; Roch, Fernando

    2017-01-01

    The maintenance of paracellular barriers in invertebrate epithelia depends on the integrity of specific cell adhesion structures known as septate junctions (SJ). Multiple studies in Drosophila have revealed that these junctions have a stereotyped architecture resulting from the association in the lateral membrane of a large number of components. However, little is known about the dynamic organisation adopted by these multi-protein complexes in living tissues. We have used live imaging techniques to show that the Ly6 protein Boudin is a component of these adhesion junctions and can diffuse systemically to associate with the SJ of distant cells. We also observe that this protein and the claudin Kune-kune are endocytosed in epidermal cells during embryogenesis. Our data reveal that the SJ contain a set of components exhibiting a high membrane turnover, a feature that could contribute in a tissue-specific manner to the morphogenetic plasticity of these adhesion structures.

  20. Study of the electroplated of Ni for betavoltaic battery using PN junction without seed layer

    Energy Technology Data Exchange (ETDEWEB)

    Uhm, Young Rang; Kim, Jong Bum; Son, Kwang Jae [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of); Cho, Byoung Gun [Electronics and Telecommunications Research Institute, Daejeon (Korea, Republic of)

    2015-10-15

    The mechanism of a nuclear battery is same as the P.N junction diode for solar cell application. The photovoltaic is operated by converting photons into electrical energy in the junction. In a betavoltaic battery, beta particles are collected and converted into electrical energy with a similar principle as a photovoltaic. If a radioisotope (RI) with a long half-life (over 100 years) is used, the lifetime of the power source is extended to as long as the half-life time of the RI. Hence, the power sources we describe could extend a system's operating life by several decades or even a century, during which time the system can gain learned behavior without worrying about the power turning off. The beta spectrum of {sup 63}Ni is below the radiation damage threshold (approximately 200 keV for Si) of semiconductors such as Si and SiC. Beta particles of 63Ni were deposited by electroplating on the Ni-foil substrate and attached on the trench P-N absorber with a spacing of 50 μm. The optimum total thickness of the 63Ni layer was determined to be about 2 μm, when regarding the minimum self-shielding effect of the beta-ray (β-ray). The optimum condition of the electroplating {sup 63}Ni was determined at current density of 20 mA/cm{sup 2}.

  1. Study of the electroplated of Ni for betavoltaic battery using PN junction without seed layer

    International Nuclear Information System (INIS)

    Uhm, Young Rang; Kim, Jong Bum; Son, Kwang Jae; Cho, Byoung Gun

    2015-01-01

    The mechanism of a nuclear battery is same as the P.N junction diode for solar cell application. The photovoltaic is operated by converting photons into electrical energy in the junction. In a betavoltaic battery, beta particles are collected and converted into electrical energy with a similar principle as a photovoltaic. If a radioisotope (RI) with a long half-life (over 100 years) is used, the lifetime of the power source is extended to as long as the half-life time of the RI. Hence, the power sources we describe could extend a system's operating life by several decades or even a century, during which time the system can gain learned behavior without worrying about the power turning off. The beta spectrum of 63 Ni is below the radiation damage threshold (approximately 200 keV for Si) of semiconductors such as Si and SiC. Beta particles of 63Ni were deposited by electroplating on the Ni-foil substrate and attached on the trench P-N absorber with a spacing of 50 μm. The optimum total thickness of the 63Ni layer was determined to be about 2 μm, when regarding the minimum self-shielding effect of the beta-ray (β-ray). The optimum condition of the electroplating 63 Ni was determined at current density of 20 mA/cm 2

  2. Isospin excitation of nucleus in 42,44,48Ca (p,n)42,44,48Sc

    International Nuclear Information System (INIS)

    Suzuki, Keiji

    2002-01-01

    To obtain information of (p,n) reaction of heavy nucleus in 100 MeV or less, 42,44,48 Ca(p,n) 42,44,48 Sc was observed on the Cyclotron Radio Isotope Center in Tohoku University. The experimental results showed that 7, 8 and 10 spin parities were determined for 42 Sc, 44 Sc and 48 SC, respectively. It was the first determination of one and two negative parity transition of 42 Sc and 48 Sc,respectively, by (p,n) reaction. The full space wave function made by 0f1p shell effective interaction by Richter,et al is good accuracy and reliability. On the (p,n) reaction at E p =35 MeV, the transition matrix elements of 42 Ca, 44 Ca and 48 Ca were derived. On the experiment of 42 Ca(p,n) 42 Sc at E p 2 on energy was agreed with the calculation results by Franey and Love. The nuclear structure of 42 Ca was thought to show more stronger U(4) symmetry, because strong GT transition at T=1 was not observed, which was expected by j-j bonding shell model calculation. (S.Y.)

  3. Electron optics with ballistic graphene junctions

    Science.gov (United States)

    Chen, Shaowen

    Electrons transmitted across a ballistic semiconductor junction undergo refraction, analogous to light rays across an optical boundary. A pn junction theoretically provides the equivalent of a negative index medium, enabling novel electron optics such as negative refraction and perfect (Veselago) lensing. In graphene, the linear dispersion and zero-gap bandstructure admit highly transparent pn junctions by simple electrostatic gating, which cannot be achieved in conventional semiconductors. Robust demonstration of these effects, however, has not been forthcoming. Here we employ transverse magnetic focusing to probe propagation across an electrostatically defined graphene junction. We find perfect agreement with the predicted Snell's law for electrons, including observation of both positive and negative refraction. Resonant transmission across the pn junction provides a direct measurement of the angle dependent transmission coefficient, and we demonstrate good agreement with theory. Comparing experimental data with simulation reveals the crucial role played by the effective junction width, providing guidance for future device design. Efforts toward sharper pn junction and possibility of zero field Veselago lensing will also be discussed. This work is supported by the Semiconductor Research Corporations NRI Center for Institute for Nanoelectronics Discovery and Exploration (INDEX).

  4. Valley dependent transport in graphene L junction

    Science.gov (United States)

    Chan, K. S.

    2018-05-01

    We studied the valley dependent transport in graphene L junctions connecting an armchair lead and a zigzag lead. The junction can be used in valleytronic devices and circuits. Electrons injected from the armchair lead into the junction is not valley polarized, but they can become valley polarized in the zigzag lead. There are Fermi energies, where the current in the zigzag lead is highly valley polarized and the junction is an efficient generator of valley polarized current. The features of the valley polarized current depend sensitively on the widths of the two leads, as well as the number of dimers in the armchair lead, because this number has a sensitive effect on the band structure of the armchair lead. When an external potential is applied to the junction, the energy range with high valley polarization is enlarged enhancing its function as a generator of highly valley polarized current. The scaling behavior found in other graphene devices is also found in L junctions, which means that the results presented here can be extended to junctions with larger dimensions after appropriate scaling of the energy.

  5. Optical model analysis of quasielastic (p, n) reactions at 22.8 MeV

    International Nuclear Information System (INIS)

    Carlson, J.D.; Zafiratos, C.D.; Lind, D.A.

    1975-01-01

    Quasielastic (p, n) differential cross sections have been measured for 29 nuclei ranging from 9 Be to 208 Pb at an energy of 22.8 MeV in approximately 7.5 0 steps from 10 0 to 152 0 . The results have been analysed with a distorted-wave Born approximation in terms of the generalized optical model due to Lane. Starting with a complex isospin interaction form factor, U 1 , deduced from the Becchetti-Greenlees global set of proton optical parameters, the shape of the surface-peaked, imaginary part of U 1 was varied until good fits to the data were obtained. The shape of the real part of U 1 and the ratio of the real to imaginary well depths were kept fixed at the Becchetti-Greenlees values. The resulting best-fit form factors had overall strengths 20-30% less than the Becchetti-Greenlees value. Further, the resulting imaginary part of U 1 was found to peak at a decreasing radius relative to the real part of U 1 with an increasing width as A increased. A smoothed parametrization of the best-fit U 1 is given for all nuclei with A > 40. The individual best-fit U 1 is used to generate self-consistent neutron optical potentials from the Becchetti-Greenlees proton optical potentials as prescribed by the Lane model. Neutron elastic scattering angular distributions and reaction cross sections predicted by these self-consistent potentials are in good agreement with observed neutron scattering data. (Auth.)

  6. Cervical spine imaging in trauma: Does the use of grid and filter combination improve visualisation of the cervicothoracic junction?

    International Nuclear Information System (INIS)

    Goyal, Nimit; Rachapalli, Vamsidhar; Burns, Helen; Lloyd, David C.F.

    2011-01-01

    Purpose: To evaluate the usefulness of filter and anti-scatter grid combination in demonstrating the cervicothoracic junction in lateral cervical spine radiographs performed for trauma patients. Methods: Following a change in departmental protocol in our hospital, anti-scatter grid and filter are routinely used for lateral cervical spine radiograph in all trauma patients with immobilised cervical spine. A retrospective study was done to compare the efficacy of lateral cervical spine radiographs in demonstrating the cervicothoracic junction for a period of three months before and after the implementation of the change. All images were independently evaluated by two observers. Results: 253 trauma patients had a lateral cervical spine radiograph done in January to March 2003 without using the anti-scatter grid and filter while 309 patients in January to March 2007, using filter and grid. Inter-observer variability between the two observers was calculated using Cohen's Kappa which showed good and very good agreement for 2003 and 2007 respectively. 126 (49.8%) images adequately demonstrated the cervicothoracic junction without using filter and grid while 189 (61.1%) were adequate following their use. This was statistically significant (Fischer exact test, p value = 0.0081). Conclusion: The use of filter and anti-scatter grids improves the visualisation of cervicothoracic junction in lateral cervical spine imaging and reduces the need to repeat exposure.

  7. Cervical spine imaging in trauma: Does the use of grid and filter combination improve visualisation of the cervicothoracic junction?

    Energy Technology Data Exchange (ETDEWEB)

    Goyal, Nimit, E-mail: nimitgoyal@doctors.org.u [University Hospital of Wales, Heath Park, Cardiff, CF14 4XW (United Kingdom); Rachapalli, Vamsidhar; Burns, Helen; Lloyd, David C.F. [University Hospital of Wales, Heath Park, Cardiff, CF14 4XW (United Kingdom)

    2011-02-15

    Purpose: To evaluate the usefulness of filter and anti-scatter grid combination in demonstrating the cervicothoracic junction in lateral cervical spine radiographs performed for trauma patients. Methods: Following a change in departmental protocol in our hospital, anti-scatter grid and filter are routinely used for lateral cervical spine radiograph in all trauma patients with immobilised cervical spine. A retrospective study was done to compare the efficacy of lateral cervical spine radiographs in demonstrating the cervicothoracic junction for a period of three months before and after the implementation of the change. All images were independently evaluated by two observers. Results: 253 trauma patients had a lateral cervical spine radiograph done in January to March 2003 without using the anti-scatter grid and filter while 309 patients in January to March 2007, using filter and grid. Inter-observer variability between the two observers was calculated using Cohen's Kappa which showed good and very good agreement for 2003 and 2007 respectively. 126 (49.8%) images adequately demonstrated the cervicothoracic junction without using filter and grid while 189 (61.1%) were adequate following their use. This was statistically significant (Fischer exact test, p value = 0.0081). Conclusion: The use of filter and anti-scatter grids improves the visualisation of cervicothoracic junction in lateral cervical spine imaging and reduces the need to repeat exposure.

  8. Shot noise in YBCO bicrystal Josephson junctions

    DEFF Research Database (Denmark)

    Constantinian, K.Y.; Ovsyannikov, G.A.; Borisenko, I.V.

    2003-01-01

    We measured spectral noise density in YBCO symmetric bicrystal Josephson junctions on sapphire substrates at bias voltages up to 100 mV and T 4.2 K. Normal state resistance of the Josephson junctions, R-N = 20-90 Omega and ICRN up to 2.2 mV have been observed in the experimental samples. Noise...... may explain the experimentally measured linewidth broadening of Josephson oscillations at mm and submm wave frequencies in high-Tc superconducting junctions. Experimental results are discussed in terms of bound states existing at surfaces of d-wave superconducting electrodes....

  9. delta-biased Josephson tunnel junctions

    DEFF Research Database (Denmark)

    Monaco, R.; Mygind, Jesper; Koshelet, V.

    2010-01-01

    Abstract: The behavior of a long Josephson tunnel junction drastically depends on the distribution of the dc bias current. We investigate the case in which the bias current is fed in the central point of a one-dimensional junction. Such junction configuration has been recently used to detect...... the persistent currents circulating in a superconducting loop. Analytical and numerical results indicate that the presence of fractional vortices leads to remarkable differences from the conventional case of uniformly distributed dc bias current. The theoretical findings are supported by detailed measurements...

  10. Parametric frequency conversion in long Josephson junctions

    International Nuclear Information System (INIS)

    Irie, F.; Ashihara, S.; Yoshida, K.

    1976-01-01

    Current steps at voltages corresponding to the parametric coupling between an applied r.f. field and junction resonant modes have been observed in long Josephson tunnel junctions in the flux-flow state. The observed periodic variations of the step height due to the applied magnetic field are explained quantitatively by a perturbational analysis using Josephson phase equations. The present study demonstrates that the moving vortex array can serve as a coherent pump wave for signal waves propagating in the barrier region, which indicates, as a result, the possibility of traveling-wave parametric devices with long Josephson tunnel junctions. (author)

  11. The Aluminum-Free P-n-P InGaAsN Double Heterojunction Bipolar Transistors

    Energy Technology Data Exchange (ETDEWEB)

    CHANG,PING-CHIH; LI,N.Y.; BACA,ALBERT G.; MONIER,C.; LAROCHE,J.R.; HOU,H.Q.; REN,F.; PEARTON,S.J.

    2000-08-01

    The authors have demonstrated an aluminum-free P-n-P GaAs/InGaAsN/GaAs double heterojunction bipolar transistor (DHBT). The device has a low turn-on voltage (V{sub ON}) that is 0.27 V lower than in a comparable P-n-p AlGaAs/GaAs HBT. The device shows near-ideal D. C. characteristics with a current gain ({beta}) greater than 45. The high-speed performance of the device are comparable to a similar P-n-p AlGaAs/GaAs HBT, with f{sub T} and f{sub MAX} values of 12 GHz and 10 GHz, respectively. This device is very suitable for low-power complementary HBT circuit applications, while the aluminum-free emitter structure eliminates issues typically associated with AlGaAs.

  12. Does the delta quench Gamow-Teller strength in (p,n)- and (p vector,p vector')-reactions

    International Nuclear Information System (INIS)

    Osterfeld, F.; Schulte, A.; Udagawa, T.; Yabe, M.

    1986-01-01

    Microscopic analyses of complete forward angle intermediate energy (p,n)-, ( 3 He,t)- and (p vector,p vector')-spin-flip spectra are presented for the reactions 90 Zr(p,n), 90 Zr( 3 He,t) and 90 Zr(p vector,p vector'). It is shown that the whole spectra up to high excitation energies (E X ∝50 MeV) are the result of correlated one-particle-one-hole (1p1h) spin-isospin transitions only. The spectra reflect, therefore, the linear spin-isospin response of the target nucleus to the probing external hadronic fields. Our results suggest that the measured (p,n)-, ( 3 He,t)- and (p vector,p vector')-cross sections are compatible with the transition strength predictions as obtained from random phase approximation (RPA) calculations. This means that the Δ isobar quenching mechanism is likely to be rather small. (orig.)

  13. 180Ta/sup g,m/ production cross sections form the 180Hf(p,n) reaction

    International Nuclear Information System (INIS)

    Norman, E.B.; Renner, T.R.; Grant, P.J.

    1981-01-01

    Cross sections have been determined for the production of the J/sup π/ = 1 + 180 Ta/sup g/ and the J/sup π/= 9 - 180 Ta/sup m/ from the 180 Hf(p,n) reaction. The 180 Ta/sup g/ cross sections were determined from measurements of γ-rays emitted following the electron-capture and β-decay of this 8.1-hour state. Total 180 Ta production cross sections were determined from measurements of the thick-target (p,n) yield. 180 Ta/sup m/ cross sections were calculated by subtracting the 180 Ta/sup g/ cross sections from the total (p,n) cross sections. These measurements are compared with the results of a statistical-model evaporation calculation

  14. Gap junctional coupling in the vertebrate retina: variations on one theme?

    Science.gov (United States)

    Völgyi, Béla; Kovács-Oller, Tamás; Atlasz, Tamás; Wilhelm, Márta; Gábriel, Róbert

    2013-05-01

    Gap junctions connect cells in the bodies of all multicellular organisms, forming either homologous or heterologous (i.e. established between identical or different cell types, respectively) cell-to-cell contacts by utilizing identical (homotypic) or different (heterotypic) connexin protein subunits. Gap junctions in the nervous system serve electrical signaling between neurons, thus they are also called electrical synapses. Such electrical synapses are particularly abundant in the vertebrate retina where they are specialized to form links between neurons as well as glial cells. In this article, we summarize recent findings on retinal cell-to-cell coupling in different vertebrates and identify general features in the light of the evergrowing body of data. In particular, we describe and discuss tracer coupling patterns, connexin proteins, junctional conductances and modulatory processes. This multispecies comparison serves to point out that most features are remarkably conserved across the vertebrate classes, including (i) the cell types connected via electrical synapses; (ii) the connexin makeup and the conductance of each cell-to-cell contact; (iii) the probable function of each gap junction in retinal circuitry; (iv) the fact that gap junctions underlie both electrical and/or tracer coupling between glial cells. These pan-vertebrate features thus demonstrate that retinal gap junctions have changed little during the over 500 million years of vertebrate evolution. Therefore, the fundamental architecture of electrically coupled retinal circuits seems as old as the retina itself, indicating that gap junctions deeply incorporated in retinal wiring from the very beginning of the eye formation of vertebrates. In addition to hard wiring provided by fast synaptic transmitter-releasing neurons and soft wiring contributed by peptidergic, aminergic and purinergic systems, electrical coupling may serve as the 'skeleton' of lateral processing, enabling important functions such

  15. Cross-section of the reaction {sup 7}Li(p,n){sup 7}Be close to the threshold

    Energy Technology Data Exchange (ETDEWEB)

    Shorin, V S [Institute of Physics and Power Engineering, Obninsk (Russian Federation)

    1997-06-01

    The status of data on the cross-section of the reaction {sup 7}Li(p,n){sup 7}Be close to the threshold is reviewed. On the basis of recent data on the cross-section of the inverse reaction {sup 7}Be(n,p){sup 7}Li and certain theoretical models, an evaluation is performed of the total cross-section of the {sup 7}Li(p,n)-reaction in the proton energy region up to 2 MeV. (author). 16 refs, 1 fig., 1 tab.

  16. Effects of Stretching by P.N.F and Harmonic Techniques on Hamstring Flexibility

    Directory of Open Access Journals (Sweden)

    Hassan Shakeri

    2006-01-01

    Full Text Available Objective: Improving of muscle flexibility is an important issue in physiotherapy and sport sciences. There are many methods for increasing muscle length and decreasing muscle stiffness. In research findings, PNF method has been found to be better than static and ballistic methods. There is another method named Harmonic technique (introduced by E. Lederman 1997 that has been claimed to be more effective, but there is not enough documentation about this claim. Aim of this study was to compare effects of stretching by PNF and harmonic techniques on hamstring flexibility. Materials & Methods: This research is a RCT study in that 45 colledge students aged 18-35 years were arranged in three groups (Harmonic, P.N.F, and control. Subjects haven’t had any painful pathology in low-back and lower extremities for last six months. Subjects had limited hamstring length (20 degrees deficiency in Active-Knee-Extension test and hadn’t professional sport activities. Dependent variablies were muscle stiffness and hamstring length which popliteal angle in AKE test was its indirect index. In pilot study, reliability of measurement of these variables were approved. Then hamstring muscle of subjects in harmonic and PNF groups were stretched by harmonic and PNF methods for six weeks, 5 minute per day and 3d/wks, whereas control group hadn’t any exercise. Results: Findings of this study showed that in both used techniques, changes of hamstring length were significant (P=0.000, but in control group there wasn’t significant change. There wasn’t significant differences between changes of hamstring length in PNF and Harmonic groups. Only in harmonic group, muscle stiffness had significant changes (P<0.03. Conclusion: According to findings of this research, both harmonic and PNF methods equally increased length of hamstring, and harmonic technique can be used as an alternative stretching method for other techniques. Maybe harmonic technique is better than PNF

  17. Technique of forecasting the working capacity of horizontal p-n-p transistor for a given radiation level; Metodika prognozirovaniya rabotosposobnosti gorizontal`nogo p-n-p tranzistora na zadannyj uroven` izlucheniya

    Energy Technology Data Exchange (ETDEWEB)

    Pershenkov, V S; Sevast` yanov, A V

    1994-12-31

    Methods of forecasting the degradation of horizontal p-n-p transistors under the effect of ionizing radiation based on the principles of invariant topological approach are presented. Results are presented and analysis of experimental investigations into the real test structures performed in the same process cycle as the integral circuit under development is given.

  18. Tunnel junctions with multiferroic barriers

    Science.gov (United States)

    Gajek, Martin; Bibes, Manuel; Fusil, Stéphane; Bouzehouane, Karim; Fontcuberta, Josep; Barthélémy, Agnès; Fert, Albert

    2007-04-01

    Multiferroics are singular materials that can exhibit simultaneously electric and magnetic orders. Some are ferroelectric and ferromagnetic and provide the opportunity to encode information in electric polarization and magnetization to obtain four logic states. However, such materials are rare and schemes allowing a simple electrical readout of these states have not been demonstrated in the same device. Here, we show that films of La0.1Bi0.9MnO3 (LBMO) are ferromagnetic and ferroelectric, and retain both ferroic properties down to a thickness of 2nm. We have integrated such ultrathin multiferroic films as barriers in spin-filter-type tunnel junctions that exploit the magnetic and ferroelectric degrees of freedom of LBMO. Whereas ferromagnetism permits read operations reminiscent of magnetic random access memories (MRAM), the electrical switching evokes a ferroelectric RAM write operation. Significantly, our device does not require the destructive ferroelectric readout, and therefore represents an advance over the original four-state memory concept based on multiferroics.

  19. Chirality effect in disordered graphene ribbon junctions

    International Nuclear Information System (INIS)

    Long Wen

    2012-01-01

    We investigate the influence of edge chirality on the electronic transport in clean or disordered graphene ribbon junctions. By using the tight-binding model and the Landauer-Büttiker formalism, the junction conductance is obtained. In the clean sample, the zero-magnetic-field junction conductance is strongly chirality-dependent in both unipolar and bipolar ribbons, whereas the high-magnetic-field conductance is either chirality-independent in the unipolar or chirality-dependent in the bipolar ribbon. Furthermore, we study the disordered sample in the presence of magnetic field and find that the junction conductance is always chirality-insensitive for both unipolar and bipolar ribbons with adequate disorders. In addition, the disorder-induced conductance plateaus can exist in all chiral bipolar ribbons provided the disorder strength is moderate. These results suggest that we can neglect the effect of edge chirality in fabricating electronic devices based on the magnetotransport in a disordered graphene ribbon. (paper)

  20. Josephson tunnel junctions in niobium films

    International Nuclear Information System (INIS)

    Wiik, Tapio.

    1976-12-01

    A method of fabricating stable Josephson tunnel junctions with reproducible characteristics is described. The junctions have a sandwich structure consisting of a vacuum evaporated niobium film, a niobium oxide layer produced by the glow discharge method and a lead film deposited by vacuum evaporation. Difficulties in producing thin-film Josephson junctions are discussed. Experimental results suggest that the lower critical field of the niobium film is the most essential parameter when evaluating the quality of these junctions. The dependence of the lower critical field on the film thickness and on the Ginzburg-Landau parameter of the film is studied analytically. Comparison with the properties of the evaporated films and with the previous calculations for bulk specimens shows that the presented model is applicable for most of the prepared samples. (author)

  1. Transparency of atom-sized superconducting junctions

    International Nuclear Information System (INIS)

    Van-der-Post, N.; Peters, E.T.; Van Ruitenbeek, J.M.; Yanson, I.K.

    1995-01-01

    We discuss the transparency of atom-size superconducting tunnel junctions by comparing experimental values of the normal resistance and Subgap Structure with the theoretical predictions for these phenomena by Landauer's formula and Multiple Andreev Reflection, respectively

  2. Josephson junction arrays and superconducting wire networks

    International Nuclear Information System (INIS)

    Lobb, C.J.

    1992-01-01

    Techniques used to fabricate integrated circuits make it possible to construct superconducting networks containing as many as 10 6 wires or Josephson junctions. Such networks undergo phase transitions from resistive high-temperature states to ordered low-resistance low-temperature states. The nature of the phase transition depends strongly on controllable parameters such as the strength of the superconductivity in each wire or junction and the external magnetic field. This paper will review the physics of these phase transitions, starting with the simplest zero-magnetic field case. This leads to a Kosterlitz-Thouless transition when the junctions or wires are weak, and a simple mean-field fransition when the junctions or wires are strong. Rich behavior, resulting from frustration, occurs in the presence of a magnetic field. (orig.)

  3. Neutron induced permanent damage in Josephson junctions

    International Nuclear Information System (INIS)

    Mueller, G.P.; Rosen, M.

    1982-01-01

    14 MeV neutron induced permanent changes in the critical current density of Josephson junctions due to displacement damage in the junction barrier are estimated using a worst case model and the binary collision simulation code MARLOWE. No likelihood of single event hard upsets is found in this model. It is estimated that a fluence of 10 18 -10 19 neutrons/cm 2 are required to change the critical current density by 5%

  4. Exotic hadron and string junction model

    International Nuclear Information System (INIS)

    Imachi, Masahiro

    1978-01-01

    Hadron structure is investigated adopting string junction model as a realization of confinement. Besides exotic hadrons (M 4 , B 5 etc.), unconventional hadrons appear. A mass formula for these hadrons is proposed. New selection rule is introduced which requires the covalence of constituent line at hadron vertex. New duality appears due to the freedom of junction, especially in anti BB→anti BB reaction. A possible assignment of exotic and unconventional hadrons to recently observed narrow meson states is presented. (auth.)

  5. Construction of tunable peptide nucleic acid junctions.

    Science.gov (United States)

    Duan, Tanghui; He, Liu; Tokura, Yu; Liu, Xin; Wu, Yuzhou; Shi, Zhengshuang

    2018-03-15

    We report here the construction of 3-way and 4-way peptide nucleic acid (PNA) junctions as basic structural units for PNA nanostructuring. The incorporation of amino acid residues into PNA chains makes PNA nanostructures with more structural complexity and architectural flexibility possible, as exemplified by building 3-way PNA junctions with tunable nanopores. Given that PNA nanostructures have good thermal and enzymatic stabilities, they are expected to have broad potential applications in biosensing, drug delivery and bioengineering.

  6. Molecular Diffusion through Cyanobacterial Septal Junctions.

    Science.gov (United States)

    Nieves-Morión, Mercedes; Mullineaux, Conrad W; Flores, Enrique

    2017-01-03

    Heterocyst-forming cyanobacteria grow as filaments in which intercellular molecular exchange takes place. During the differentiation of N 2 -fixing heterocysts, regulators are transferred between cells. In the diazotrophic filament, vegetative cells that fix CO 2 through oxygenic photosynthesis provide the heterocysts with reduced carbon and heterocysts provide the vegetative cells with fixed nitrogen. Intercellular molecular transfer has been traced with fluorescent markers, including calcein, 5-carboxyfluorescein, and the sucrose analogue esculin, which are observed to move down their concentration gradient. In this work, we used fluorescence recovery after photobleaching (FRAP) assays in the model heterocyst-forming cyanobacterium Anabaena sp. strain PCC 7120 to measure the temperature dependence of intercellular transfer of fluorescent markers. We find that the transfer rate constants are directly proportional to the absolute temperature. This indicates that the "septal junctions" (formerly known as "microplasmodesmata") linking the cells in the filament allow molecular exchange by simple diffusion, without any activated intermediate state. This constitutes a novel mechanism for molecular transfer across the bacterial cytoplasmic membrane, in addition to previously characterized mechanisms for active transport and facilitated diffusion. Cyanobacterial septal junctions are functionally analogous to the gap junctions of metazoans. Although bacteria are frequently considered just as unicellular organisms, there are bacteria that behave as true multicellular organisms. The heterocyst-forming cyanobacteria grow as filaments in which cells communicate. Intercellular molecular exchange is thought to be mediated by septal junctions. Here, we show that intercellular transfer of fluorescent markers in the cyanobacterial filament has the physical properties of simple diffusion. Thus, cyanobacterial septal junctions are functionally analogous to metazoan gap junctions

  7. Spinal Gap Junction Channels in Neuropathic Pain

    OpenAIRE

    Jeon, Young Hoon; Youn, Dong Ho

    2015-01-01

    Damage to peripheral nerves or the spinal cord is often accompanied by neuropathic pain, which is a complex, chronic pain state. Increasing evidence indicates that alterations in the expression and activity of gap junction channels in the spinal cord are involved in the development of neuropathic pain. Thus, this review briefly summarizes evidence that regulation of the expression, coupling, and activity of spinal gap junction channels modulates pain signals in neuropathic pain states induced...

  8. Enhancing light absorption within the carrier transport length in quantum junction solar cells.

    Science.gov (United States)

    Fu, Yulan; Hara, Yukihiro; Miller, Christopher W; Lopez, Rene

    2015-09-10

    Colloidal quantum dot (CQD) solar cells have attracted tremendous attention because of their tunable absorption spectrum window and potentially low processing cost. Recently reported quantum junction solar cells represent a promising approach to building a rectifying photovoltaic device that employs CQD layers on each side of the p-n junction. However, the ultimate efficiency of CQD solar cells is still highly limited by their high trap state density in both p- and n-type CQDs. By modeling photonic structures to enhance the light absorption within the carrier transport length and by ensuring that the carrier generation and collection efficiencies were both augmented, our work shows that overall device current density could be improved. We utilized a two-dimensional numerical model to calculate the characteristics of patterned CQD solar cells based on a simple grating structure. Our calculation predicts a short circuit current density as high as 31  mA/cm2, a value nearly 1.5 times larger than that of the conventional flat design, showing the great potential value of patterned quantum junction solar cells.

  9. Ballistic Josephson junctions based on CVD graphene

    Science.gov (United States)

    Li, Tianyi; Gallop, John; Hao, Ling; Romans, Edward

    2018-04-01

    Josephson junctions with graphene as the weak link between superconductors have been intensely studied in recent years, with respect to both fundamental physics and potential applications. However, most of the previous work was based on mechanically exfoliated graphene, which is not compatible with wafer-scale production. To overcome this limitation, we have used graphene grown by chemical vapour deposition (CVD) as the weak link of Josephson junctions. We demonstrate that very short, wide CVD-graphene-based Josephson junctions with Nb electrodes can work without any undesirable hysteresis in their electrical characteristics from 1.5 K down to a base temperature of 320 mK, and their gate-tuneable critical current shows an ideal Fraunhofer-like interference pattern in a perpendicular magnetic field. Furthermore, for our shortest junctions (50 nm in length), we find that the normal state resistance oscillates with the gate voltage, consistent with the junctions being in the ballistic regime, a feature not previously observed in CVD-graphene-based Josephson junctions.

  10. Junction depth measurement using carrier illumination

    International Nuclear Information System (INIS)

    Borden, Peter

    2001-01-01

    Carrier Illumination [trade mark] (CI) is a new method recently developed to meet the need for a non-destructive, high throughput junction depth measurement on patterned wafers. A laser beam creates a quasi-static excess carrier profile in the semiconductor underlying the activated junction. The excess carrier profile is fairly constant below the junction, and drops rapidly in the junction, creating a steep index of refraction gradient at the junction edge. Interference with light reflected from this index gradient provides a signal that is analyzed to determine the junction depth. The paper summarizes evaluation of performance in full NMOS and PMOS process flows, on both bare and patterned wafers. The aims have been to validate (1) performance in the presence of underlying layers typically found at the source/drain (S/D) process steps and (2) measurement on patterned wafers. Correlation of CI measurements to SIMS and transistor drive current are shown. The data were obtained from NMOS structures using As S/D and LDD implants. Correlations to SRP, SIMS and sheet resistance are shown for PMOS structures using B 11 LDD implants. Gage capability measurements are also presented

  11. Laterally loaded masonry

    DEFF Research Database (Denmark)

    Raun Gottfredsen, F.

    In this thesis results from experiments on mortar joints and masonry as well as methods of calculation of strength and deformation of laterally loaded masonry are presented. The strength and deformation capacity of mortar joints have been determined from experiments involving a constant compressive...... stress and increasing shear. The results show a transition to pure friction as the cohesion is gradually destroyed. An interface model of a mortar joint that can take into account this aspect has been developed. Laterally loaded masonry panels have also been tested and it is found to be characteristic...... that laterally loaded masonry exhibits a non-linear load-displacement behaviour with some ductility....

  12. Hybrid van der Waals p-n Heterojunctions based on SnO and 2D MoS2

    KAUST Repository

    Wang, Zhenwei; He, Xin; Zhang, Xixiang; Alshareef, Husam N.

    2016-01-01

    A p-type oxide/2D hybrid van der Waals p-n heterojunction is demonstrated for the first time between SnO (tin monoxide) (the p-type oxide) and 2D MoS2 (molybdenum disulfide), showing an ideality factor of 2 and rectification ratio up to 10

  13. K0 production in pN collisions at Ep=70 GeV in the deep-fragmentation region

    International Nuclear Information System (INIS)

    1996-01-01

    The quasiexclusive production of neutral kaons in pN collisions is investigated with the SPHINX detector irradiated by a 70-GeV proton beam from the IHEP accelerator. The cross sections for K0 production and the parameters of the corresponding differential distributions are determined for the deep-fragmentation region (xF0.79-0.86) of this interaction

  14. Comparison of polarization and analysing power for the /sup 9/Be(p,n)/sup 9/B reaction

    Energy Technology Data Exchange (ETDEWEB)

    Byrd, R.C.; Lisowski, P.W.; Tornow, W.; Walter, R.L. (Duke Univ., Durham, NC (USA). Dept. of Physics; Triangle Universities Nuclear Lab., Durham, NC (USA))

    1983-08-01

    A recent Lane model of the /sup 9/Be + nucleon system raised the question of differences between the polarization P(THETA) and the analyzing power A(THETA) in (p, n) reactions between mirror nuclei. Since these two observables are identical under exact charge symmetry, observation of a difference would indicate the breaking of this symmetry, probably by the Coulomb interaction. This paper describes the techniques for measurements of P(THETA) and A(THETA) in (p, n) reactions, with an emphasis on the elimination of systematic errors and the determination of background contributions. Measurements of both observables were made for the /sup 9/Be(p, n/sub 0/)/sup 9/B reaction at several angles for energies from 3 to 10 MeV. The results are combined with previous measurements to develop data sets for a comprehensive comparison of P(THETA) and A(THETA). Previous A(THETA) values agree well with the present measurements, while most of the earlier P(THETA) data are shown to be in error. Our data show that there do exist sizeable differences between P(THETA) and A(THETA) at energies from Esub(p) = 5-7 MeV. The existence of such differences in light nuclear systems is consistent with recent shell-model calculations for the /sup 11/B(p, n/sub 0/)/sup 11/C reaction.

  15. Reversible and Precisely Controllable p/n-Type Doping of MoTe2 Transistors through Electrothermal Doping.

    Science.gov (United States)

    Chang, Yuan-Ming; Yang, Shih-Hsien; Lin, Che-Yi; Chen, Chang-Hung; Lien, Chen-Hsin; Jian, Wen-Bin; Ueno, Keiji; Suen, Yuen-Wuu; Tsukagoshi, Kazuhito; Lin, Yen-Fu

    2018-03-01

    Precisely controllable and reversible p/n-type electronic doping of molybdenum ditelluride (MoTe 2 ) transistors is achieved by electrothermal doping (E-doping) processes. E-doping includes electrothermal annealing induced by an electric field in a vacuum chamber, which results in electron (n-type) doping and exposure to air, which induces hole (p-type) doping. The doping arises from the interaction between oxygen molecules or water vapor and defects of tellurium at the MoTe 2 surface, and allows the accurate manipulation of p/n-type electrical doping of MoTe 2 transistors. Because no dopant or special gas is used in the E-doping processes of MoTe 2 , E-doping is a simple and efficient method. Moreover, through exact manipulation of p/n-type doping of MoTe 2 transistors, quasi-complementary metal oxide semiconductor adaptive logic circuits, such as an inverter, not or gate, and not and gate, are successfully fabricated. The simple method, E-doping, adopted in obtaining p/n-type doping of MoTe 2 transistors undoubtedly has provided an approach to create the electronic devices with desired performance. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  16. Tropical calcific pancreatitis and its association with CTRC and SPINK1 (p.N34S) variants.

    NARCIS (Netherlands)

    Derikx, M.H.; Szmola, R.; Morsche, R.H.M. te; Sunderasan, S.; Chacko, A.; Drenth, J.P.H.

    2009-01-01

    BACKGROUND: Tropical calcific pancreatitis (TCP) is a relatively common form of chronic pancreatitis in parts of Asia and Africa. The SPINK1 variant p.N34S is strongly associated with TCP, but other genetic factors remain to be defined. Chymotrypsinogen C (CTRC) degrades trypsinogen and

  17. Air-water two-phase flow through a pipe junction

    International Nuclear Information System (INIS)

    Suu, Tetsuo

    1991-01-01

    The distribution of the local void fraction across the section of the conduit was studied experimentally in air-water two-phase flow flowing through a pipe junction with the branching angle of 90deg and the area ratio of unity. As in the previous report, the main conduit of the junction was set up vertically and upward air-water bubbly and slug flows were arranged in the main upstream section. If the flow regime, the quality and the ratio of lateral mass flow discharge of water to total mass flow discharge of water are the same, the larger the Reynolds number is, the more violent the variety of the local void fraction distribution adjacent to the branching part in the lateral conduit is. However, the variety in the main downstream section is scarcely influenced by the Reynolds number. (author)

  18. Later zaaien kost opbrengst

    NARCIS (Netherlands)

    Alblas, J.

    2000-01-01

    Onderzoek naar de gevolgen van het uitstellen van het zaaitijdstip op de gewasproductie en op opbrengstderving, bijvoorbeeld doordat de grond later bewerkt kan worden door een hogere grondwaterstand als gevolg van peilverhoging

  19. LATERAL ANKLE INJURY

    OpenAIRE

    Pollard, Henry; Sim, Patrick; McHardy, Andrew

    2002-01-01

    Background: Injury to the ankle joint is the most common peripheral joint injury. The sports that most commonly produce high ankle injury rates in their participating athletes include: basketball, netball, and the various codes of football. Objective: To provide an up to date understanding of manual therapy relevant to lateral ligament injury of the ankle. A discussion of the types of ligament injury and common complicating factors that present with lateral ankle pain is presented along with ...

  20. [Lateral epicondylitis: conservative - operative].

    Science.gov (United States)

    Altintas, Burak; Greiner, Stefan

    2016-10-01

    Lateral epicondylitis is a common disease of the common extensor origin at the lateral humerus. Despite its common self-limitation it can lead to chronic therapy-resistant pain with remarkable functional disability of the affected arm. Different conservative and operative treatment options of lateral epicondylitis are described and compared regarding benefits and risks. Additionally, recent surgical techniques and their complications are mentioned. Based on the current literature, it is shown which treatment option can be recommended. This review was based on the literature analysis in PubMed regarding "conservative and operative therapy of lateral epicondylitis" as well as the clinical experience of the authors. Conservative treatment is the primary choice for the treatment of lateral epicondylitis if concomitant pathologies such as instability among others can be excluded. It should include strengthening against resistance with eccentric stretching of the extensor group. In persistent cases, operative treatment is warranted. Resection of the pathologic tissue at the extensor origin with debridement and refixation of the healthy tendinous tissue yields good results. Most patients with lateral epicondylitis can be treated conservatively with success. Radiological evaluation should be performed in therapy-resistant cases. In the case of partial or complete rupture of the extensor origin, operative therapy is indicated.

  1. Josephson junctions of multiple superconducting wires

    Science.gov (United States)

    Deb, Oindrila; Sengupta, K.; Sen, Diptiman

    2018-05-01

    We study the spectrum of Andreev bound states and Josephson currents across a junction of N superconducting wires which may have s - or p -wave pairing symmetries and develop a scattering matrix based formalism which allows us to address transport across such junctions. For N ≥3 , it is well known that Berry curvature terms contribute to the Josephson currents; we chart out situations where such terms can have relatively large effects. For a system of three s -wave or three p -wave superconductors, we provide analytic expressions for the Andreev bound-state energies and study the Josephson currents in response to a constant voltage applied across one of the wires; we find that the integrated transconductance at zero temperature is quantized to integer multiples of 4 e2/h , where e is the electron charge and h =2 π ℏ is Planck's constant. For a sinusoidal current with frequency ω applied across one of the wires in the junction, we find that Shapiro plateaus appear in the time-averaged voltage across that wire for any rational fractional multiple (in contrast to only integer multiples in junctions of two wires) of 2 e /(ℏ ω ) . We also use our formalism to study junctions of two p -wave and one s -wave wires. We find that the corresponding Andreev bound-state energies depend on the spin of the Bogoliubov quasiparticles; this produces a net magnetic moment in such junctions. The time variation of these magnetic moments may be controlled by an external voltage applied across the junction. We discuss experiments which may test our theory.

  2. Josephson tunnel junctions with ferromagnetic interlayer

    International Nuclear Information System (INIS)

    Weides, M.P.

    2006-01-01

    Superconductivity and ferromagnetism are well-known physical properties of solid states that have been widely studied and long thought about as antagonistic phenomena due to difference in spin ordering. It turns out that the combination of both superconductor and ferromagnet leads to a very rich and interesting physics. One particular example, the phase oscillations of the superconducting order parameter inside the ferromagnet, will play a major role for the devices discussed in this work. In this thesis, I present Josephson junctions with a thin Al 2 O 3 tunnel barrier and a ferromagnetic interlayer, i.e. superconductor-insulator-ferromagnet-superconductor (SIFS) stacks. The fabrication of junctions was optimized regarding the insulation of electrodes and the homogeneity of the current transport. The junctions were either in the 0 or π coupled ground state, depending on the thickness of the ferromagnetic layer and on temperature. The influence of ferromagnetic layer thickness on the transport properties and the coupling (0, π) of SIFS tunnel junctions was studied. Furthermore, using a stepped ferromagnetic layer with well-chosen thicknesses, I obtained the so-called 0-π Josephson junction. At a certain temperature this 0-π junction can be made perfectly symmetric. In this case the ground state corresponds to a vortex of supercurrent creating a magnetic flux which is a fraction of the magnetic flux quantum Φ 0 . Such structures allow to study the physics of fractional vortices and to build various electronic circuits based on them. The SIFS junctions presented here have an exponentially vanishing damping at T → 0. The SIFS technology developed within the framework of this work may be used to construct classical and quantum devices such as oscillators, memory cells and qubits. (orig.)

  3. Josephson tunnel junctions with ferromagnetic interlayer

    Energy Technology Data Exchange (ETDEWEB)

    Weides, M.P.

    2006-07-01

    Superconductivity and ferromagnetism are well-known physical properties of solid states that have been widely studied and long thought about as antagonistic phenomena due to difference in spin ordering. It turns out that the combination of both superconductor and ferromagnet leads to a very rich and interesting physics. One particular example, the phase oscillations of the superconducting order parameter inside the ferromagnet, will play a major role for the devices discussed in this work. In this thesis, I present Josephson junctions with a thin Al{sub 2}O{sub 3} tunnel barrier and a ferromagnetic interlayer, i.e. superconductor-insulator-ferromagnet-superconductor (SIFS) stacks. The fabrication of junctions was optimized regarding the insulation of electrodes and the homogeneity of the current transport. The junctions were either in the 0 or {pi} coupled ground state, depending on the thickness of the ferromagnetic layer and on temperature. The influence of ferromagnetic layer thickness on the transport properties and the coupling (0, {pi}) of SIFS tunnel junctions was studied. Furthermore, using a stepped ferromagnetic layer with well-chosen thicknesses, I obtained the so-called 0-{pi} Josephson junction. At a certain temperature this 0-{pi} junction can be made perfectly symmetric. In this case the ground state corresponds to a vortex of supercurrent creating a magnetic flux which is a fraction of the magnetic flux quantum {phi}{sub 0}. Such structures allow to study the physics of fractional vortices and to build various electronic circuits based on them. The SIFS junctions presented here have an exponentially vanishing damping at T {yields} 0. The SIFS technology developed within the framework of this work may be used to construct classical and quantum devices such as oscillators, memory cells and qubits. (orig.)

  4. Macroscopic quantum tunneling in Josephson tunnel junctions and Coulomb blockade in single small tunnel junctions

    International Nuclear Information System (INIS)

    Cleland, A.N.

    1991-01-01

    Experiments investigated the process of macroscopic quantum tunneling in a moderately-damped, resistively shunted, Josephson junction are described, followed by a discussion of experiments performed on very-small-capacitance normal-metal tunnel junctions. The experiments on the resistively-shunted Josephson junction were designed to investigate a quantum process, that of the tunneling of the Josephson-phase variable under a potential barrier, in a system in which dissipation plays a major role in the dynamics of motion. All the parameters of the junction were measured using the classical phenomena of thermal activation and resonant activation. Theoretical predictions are compared with the experimental results, showing good agreement with no adjustable parameters. The experiments on small-capacitance tunnel junctions extend the measurements on the large-area Josephson junctions from the region in which the phase variable has a fairly well-defined value, i.e. its wave function has a narrow width, to the region where its value is almost completely unknown. The charge on the junction becomes well-defined and is predicted to quantize the current through the junction, giving rise to the Coulomb blockade at low bias

  5. Ballistic Graphene Josephson Junctions from the Short to the Long Junction Regimes.

    Science.gov (United States)

    Borzenets, I V; Amet, F; Ke, C T; Draelos, A W; Wei, M T; Seredinski, A; Watanabe, K; Taniguchi, T; Bomze, Y; Yamamoto, M; Tarucha, S; Finkelstein, G

    2016-12-02

    We investigate the critical current I_{C} of ballistic Josephson junctions made of encapsulated graphene-boron-nitride heterostructures. We observe a crossover from the short to the long junction regimes as the length of the device increases. In long ballistic junctions, I_{C} is found to scale as ∝exp(-k_{B}T/δE). The extracted energies δE are independent of the carrier density and proportional to the level spacing of the ballistic cavity. As T→0 the critical current of a long (or short) junction saturates at a level determined by the product of δE (or Δ) and the number of the junction's transversal modes.

  6. Increasing gap junctional coupling: a tool for dissecting the role of gap junctions

    DEFF Research Database (Denmark)

    Axelsen, Lene Nygaard; Haugan, Ketil; Stahlhut, Martin

    2007-01-01

    Much of our current knowledge about the physiological and pathophysiological role of gap junctions is based on experiments where coupling has been reduced by either chemical agents or genetic modification. This has brought evidence that gap junctions are important in many physiological processes....... In a number of cases, gap junctions have been implicated in the initiation and progress of disease, and experimental uncoupling has been used to investigate the exact role of coupling. The inverse approach, i.e., to increase coupling, has become possible in recent years and represents a new way of testing...... the role of gap junctions. The aim of this review is to summarize the current knowledge obtained with agents that selectively increase gap junctional intercellular coupling. Two approaches will be reviewed: increasing coupling by the use of antiarrhythmic peptide and its synthetic analogs...

  7. Wide-range and fast thermally-tunable silicon photonic microring resonators using the junction field effect.

    Science.gov (United States)

    Wang, Xiaoxi; Lentine, Anthony; DeRose, Christopher; Starbuck, Andrew L; Trotter, Douglas; Pomerene, Andrew; Mookherjea, Shayan

    2016-10-03

    Tunable silicon microring resonators with small, integrated micro-heaters which exhibit a junction field effect were made using a conventional silicon-on-insulator (SOI) photonic foundry fabrication process. The design of the resistive tuning section in the microrings included a "pinched" p-n junction, which limited the current at higher voltages and inhibited damage even when driven by a pre-emphasized voltage waveform. Dual-ring filters were studied for both large (>4.9 THz) and small (850 GHz) free-spectral ranges. Thermal red-shifting was demonstrated with microsecond-scale time constants, e.g., a dual-ring filter was tuned over 25 nm in 0.6 μs 10%-90% transition time, and with efficiency of 3.2 μW/GHz.

  8. Particle detection with superconducting tunnel junctions

    International Nuclear Information System (INIS)

    Jany, P.

    1990-08-01

    At the Institute of Experimental Nuclear Physics of the University of Karlsruhe (TH) and at the Institute for Nuclear Physics of the Kernforschungszentrum Karlsruhe we started to produce superconducting tunnel junctions and to investigate them for their suitability as particle detectors. The required facilities for the production of tunnel junctions and the experimental equipments to carry out experiments with them were erected. Experiments are presented in which radiations of different kinds of particles could successfully be measured with the tunnel junctions produced. At first we succeeded in detectioning light pulses of a laser. In experiments with alpha-particles of an energy of 4,6 MeV the alpha-particles were detected with an energy resolution of 1,1%, and it was shown in specific experiments that the phonons originating from the deposition of energy by an alpha-particle in the substrate can be detected with superconducting tunnel junctions at the surface. On that occasion it turned out that the signals could be separated with respect to their point of origin (tunnel junction, contact leads, substrate). Finally X-rays with an energy of 6 keV were detected with an energy resolution of 8% in a test arrangement that makes use of the so-called trapping effect to read out a larger absorber volume. (orig.) [de

  9. Joint diseases: from connexins to gap junctions.

    Science.gov (United States)

    Donahue, Henry J; Qu, Roy W; Genetos, Damian C

    2017-12-19

    Connexons form the basis of hemichannels and gap junctions. They are composed of six tetraspan proteins called connexins. Connexons can function as individual hemichannels, releasing cytosolic factors (such as ATP) into the pericellular environment. Alternatively, two hemichannel connexons from neighbouring cells can come together to form gap junctions, membrane-spanning channels that facilitate cell-cell communication by enabling signalling molecules of approximately 1 kDa to pass from one cell to an adjacent cell. Connexins are expressed in joint tissues including bone, cartilage, skeletal muscle and the synovium. Indicative of their importance as gap junction components, connexins are also known as gap junction proteins, but individual connexin proteins are gaining recognition for their channel-independent roles, which include scaffolding and signalling functions. Considerable evidence indicates that connexons contribute to the function of bone and muscle, but less is known about the function of connexons in other joint tissues. However, the implication that connexins and gap junctional channels might be involved in joint disease, including age-related bone loss, osteoarthritis and rheumatoid arthritis, emphasizes the need for further research into these areas and highlights the therapeutic potential of connexins.

  10. A novel adhering junction in the apical ciliary apparatus of the rotifer Brachionus plicatilis (Rotifera, Monogononta).

    Science.gov (United States)

    Dallai, R; Lupetti, P; Lane, N J

    1996-10-01

    Cultures of the rotifer Brachionus plicatilis were examined with regard to their interepithelial junctions after infiltration with the extracellular tracer lanthanum, freeze-fracturing or quick-freeze deep-etching. The lateral borders between ciliated cells have an unusual apical adhering junction. This apical part of their intercellular cleft looks desmosome-like, but it is characterized by unusual intramembranous E-face clusters of particles. Deep-etching reveals that these are packed together in short rows which lie parallel to one another in orderly arrays. The true membrane surface in these areas features filaments in the form of short ribbons; these are produced by projections, possibly part of the glycocalyx, emerging from the membranes, between which the electron-dense tracer lanthanum permeates. These projections appear to overlap with each other in the centre of the intercellular cleft; this would provide a particularly flexible adaptation to maintain cell-cell contact and coordination as a consequence. The filamentous ribbons may be held in position by the intramembranous particle arrays since both have a similar size and distribution. These contacts are quite different from desmosomes and appear to represent a distinct new category of adhesive cell-cell junction. Beneath these novel structures, conventional pleated septate junctions are found, exhibiting the undulating intercellular ribbons typical of this junctional type, as well as the usual parallel alignments of intramembranous rows of EF grooves and PF particles. Below these are found gap junctions as close-packed plaques of intramembranous particles on either the P-face or E-face. After freeze-fracturing, the complementary fracture face to the particles shows pits, usually on the P-face, arrayed with a very precise hexagonal pattern.

  11. MRI gel dosimetry for verification of mono-isocentric junction doses in head and neck radiotherapy

    International Nuclear Information System (INIS)

    Back, S.A.J.; Jayasekera, P.M.; Lepage, M.; Baldock, C.; Menzies, N.; Back, P.

    2000-01-01

    Full text: The use of independent collimators in the abutment of two adjacent treatment volumes, as in head and neck radiation treatments, consists typically of positioning the collimator rotation axis (CRA) at the junction of the volumes, and offsetting each field by its half-field width. This has the effect of positioning one of the collimator jaws at the CRA for each field. However, misalignment of the jaws can lead to variations in dose uniformity in the junction region. We have used gel dosimetry to measure junction doses in three dimensions. PAG gel MRI was used to investigate junction dosimetry for a mono-isocentriic treatment of two orthogonal pairs of opposed (ant/post and lateral) 6 MV x-ray beams. PAG gels in an 11cm diameter cylindrical gel phantom were imaged using a Siemens Vision 1.5 T MRI. The exposures were made using a Philips SL 20 linear accelerator with independent jaws that were known to overlap at the isocentre for sequential abutting offset (within manufacturer's specifications for symmetric fields). X-Omat V films were exposed in mono-directional beams, and optically scanned for comparison. Measurements of off-axis ratios and of relative depth profiles using gel MRI and perpendicular film were in excellent agreement with each other. Measurements through the multi-directional junction at the isocentre are illustrated in the graph, for orthogonal planes centred at the isocentre of the neck phantom. They demonstrate a minimum dose of 75 % of that of the adjacent 'treatment' regions, which agrees closely with the results measured (72%) in the mono-directional case with film. We conclude that this measurement confirms that junction dosimetry at the isocentre measured with perpendicular film for a single direction is a good approximation to the situation in multiple directions. Copyright (2000) Australasian College of Physical Scientists and Engineers in Medicine

  12. Modulation and Control of Charge Transport Through Single-Molecule Junctions.

    Science.gov (United States)

    Wang, Kun; Xu, Bingqian

    2017-02-01

    The ability to modulate and control charge transport though single-molecule junction devices is crucial to achieving the ultimate goal of molecular electronics: constructing real-world-applicable electronic components from single molecules. This review aims to highlight the progress made in single-molecule electronics, emphasizing the development of molecular junction electronics in recent years. Among many techniques that attempt to wire a molecule to metallic electrodes, the single-molecule break junction (SMBJ) technique is one of the most reliable and tunable experimental platforms for achieving metal-molecule-metal configurations. It also provides great freedom to tune charge transport through the junction. Soon after the SMBJ technique was introduced, it was extensively used to measure the conductances of individual molecules; however, different conductances were obtained for the same molecule, and it proved difficult to interpret this wide distribution of experimental data. This phenomenon was later found to be mainly due to a lack of precise experimental control and advanced data analysis methods. In recent years, researchers have directed considerable effort into advancing the SMBJ technique by gaining a deeper physical understanding of charge transport through single molecules and thus enhancing its potential applicability in functional molecular-scale electronic devices, such as molecular diodes and molecular transistors. In parallel with that research, novel data analysis methods and approaches that enable the discovery of hidden yet important features in the data are being developed. This review discusses various aspects of molecular junction electronics, from the initial goal of molecular electronics, the development of experimental techniques for creating single-molecule junctions and determining single-molecule conductance, to the characterization of functional current-voltage features and the investigation of physical properties other than charge

  13. Preventing Errors in Laterality

    OpenAIRE

    Landau, Elliot; Hirschorn, David; Koutras, Iakovos; Malek, Alexander; Demissie, Seleshie

    2014-01-01

    An error in laterality is the reporting of a finding that is present on the right side as on the left or vice versa. While different medical and surgical specialties have implemented protocols to help prevent such errors, very few studies have been published that describe these errors in radiology reports and ways to prevent them. We devised a system that allows the radiologist to view reports in a separate window, displayed in a simple font and with all terms of laterality highlighted in sep...

  14. New method to evaluate the {sup 7}Li(p, n){sup 7}Be reaction near threshold

    Energy Technology Data Exchange (ETDEWEB)

    Herrera, María S., E-mail: herrera@tandar.cnea.gov.ar [Comisión Nacional de Energía Atómica, Av. Gral. Paz 1499, Buenos Aires B1650KNA (Argentina); Consejo Nacional de Investigaciones Científicas y Técnicas, Av. Rivadavia 1917, Ciudad Autónoma de Buenos Aires C1033AAJ (Argentina); Escuela de Ciencia y Tecnología, UNSAM, 25 de Mayo y Francia, Buenos Aires B1650KNA (Argentina); Moreno, Gustavo A. [YPF Tecnología, Baradero S/N, Buenos Aires 1925 (Argentina); Departamento de Física J. J. Giambiagi, Facultad de Ciencias Exactas y Naturales, UBA, Ciudad Universitaria, Ciudad Autónoma de Buenos Aires 1428 (Argentina); Kreiner, Andrés J. [Comisión Nacional de Energía Atómica, Av. Gral. Paz 1499, Buenos Aires B1650KNA (Argentina); Consejo Nacional de Investigaciones Científicas y Técnicas, Av. Rivadavia 1917, Ciudad Autónoma de Buenos Aires C1033AAJ (Argentina); Escuela de Ciencia y Tecnología, UNSAM, 25 de Mayo y Francia, Buenos Aires B1650KNA (Argentina)

    2015-04-15

    In this work a complete description of the {sup 7}Li(p, n){sup 7}Be reaction near threshold is given using center-of-mass and relative coordinates. It is shown that this standard approach, not used before in this context, leads to a simple mathematical representation which gives easy access to all relevant quantities in the reaction and allows a precise numerical implementation. It also allows in a simple way to include proton beam-energy spread affects. The method, implemented as a C++ code, was validated both with numerical and experimental data finding a good agreement. This tool is also used here to analyze scattered published measurements such as (p, n) cross sections, differential and total neutron yields for thick targets. Using these data we derive a consistent set of parameters to evaluate neutron production near threshold. Sensitivity of the results to data uncertainty and the possibility of incorporating new measurements are also discussed.

  15. Correlation between dislocations and leakage current of p-n diodes on a free-standing GaN substrate

    Science.gov (United States)

    Usami, Shigeyoshi; Ando, Yuto; Tanaka, Atsushi; Nagamatsu, Kentaro; Deki, Manato; Kushimoto, Maki; Nitta, Shugo; Honda, Yoshio; Amano, Hiroshi; Sugawara, Yoshihiro; Yao, Yong-Zhao; Ishikawa, Yukari

    2018-04-01

    Dislocations that cause a reverse leakage current in vertical p-n diodes on a GaN free-standing substrate were investigated. Under a high reverse bias, dot-like leakage spots were observed using an emission microscope. Subsequent cathodoluminescence (CL) observations revealed that the leakage spots coincided with part of the CL dark spots, indicating that some types of dislocation cause reverse leakage. When etch pits were formed on the dislocations by KOH etching, three sizes of etch pits were obtained (large, medium, and small). Among these etch pits, only the medium pits coincided with leakage spots. Additionally, transmission electron microscopy observations revealed that pure screw dislocations are present under the leakage spots. The results revealed that 1c pure screw dislocations are related to the reverse leakage in vertical p-n diodes.

  16. Measurement and analysis of double-differential neutron emission spectra in (P,N) and (α,N) reactions

    International Nuclear Information System (INIS)

    Okamoto, K.; Mehta, M.K.

    1988-05-01

    The second IAEA Research Co-ordination Meeting on Measurement and Analysis of Double-Differential Neutron Emission Spectra in (p,n) and (α,n) Reactions was convened by the IAEA Nuclear Data Section at the IAEA Headquarters in Vienna during 8-10 February, 1988. The main objectives of the Co-ordinated Research Project for which this meeting was held are (i) to extract systematic information about nuclear level densities as a function of excitation energy by analysing the neutron emission spectra from (p,n) and (α,n) reactions on properly selected targets and bombarding energy range, and (ii) to parametrize this information into appropriate phenomenological models to enable reliable extrapolation for general use of level density information in basic and applied nuclear physics related problems. Detailed conclusions and recommendations, together with a summary of the programme during 1988/1989 are attached in the Appendices

  17. Protection of p+-n-Si Photoanodes by Sputter-Deposited Ir/IrOxThin Films

    DEFF Research Database (Denmark)

    Mei, Bastian Timo; Seger, Brian; Pedersen, Thomas

    2014-01-01

    Sputter deposition of Ir/IrOx on p+-n-Si without interfacial corrosion protection layers yielded photoanodes capable of efficient water oxidation (OER) in acidic media (1 M H2SO4). Stability of at least 18 h was shown by chronoamperomety at 1.23 V versus RHE (reversible hydrogen electrode) under 38...... density of 1 mA/cm2 at 1.05 V vs. RHE. Further improvement by heat treatment resulted in a cathodic shift of 40 mV and enabled a current density of 10 mA/cm2 (requirements for a 10% efficient tandem device) at 1.12 V vs. RHS under irradiation. Thus, the simple IrOx/Ir/p+-n-Si structures not only provide...

  18. Terahertz Responses of Intrinsic Josephson Junctions in High TC Superconductors

    International Nuclear Information System (INIS)

    Wang, H. B.; Wu, P. H.; Yamashita, T.

    2001-01-01

    High frequency responses of intrinsic Josephson junctions up to 2.5THz, including the observation of Shapiro steps under various conditions, are reported and discussed in this Letter. The sample was an array of intrinsic Josephson junctions singled out from inside a high T C superconducting Bi 2 Sr 2 CaCu 2 O 8+x single crystal, with a bow-tie antenna integrated to it. The number of junctions in the array was controllable, the junctions were homogeneous, the distribution of applied irradiation among the junctions was even, and the junctions could synchronously respond to high frequency irradiation

  19. Phase-dependent noise in Josephson junctions

    Science.gov (United States)

    Sheldon, Forrest; Peotta, Sebastiano; Di Ventra, Massimiliano

    2018-03-01

    In addition to the usual superconducting current, Josephson junctions (JJs) support a phase-dependent conductance related to the retardation effect of tunneling quasi-particles. This introduces a dissipative current with a memory-resistive (memristive) character that should also affect the current noise. By means of the microscopic theory of tunnel junctions we compute the complete current autocorrelation function of a Josephson tunnel junction and show that this memristive component gives rise to both a previously noted phase-dependent thermal noise, and an undescribed non-stationary, phase-dependent dynamic noise. As experiments are approaching ranges in which these effects may be observed, we examine the form and magnitude of these processes. Their phase dependence can be realized experimentally as a hysteresis effect and may be used to probe defects present in JJ based qubits and in other superconducting electronics applications.

  20. Phonon spectroscopy with superconducting tunnel junctions

    International Nuclear Information System (INIS)

    Grimshaw, J.M.

    1984-02-01

    Superconducting tunnel junctions can be used as generators and detectors of monochromatic phonons of frequency larger than 80 GHz, as was first devised by Eisenmenger and Dayem (1967) and Kinder (1972a, 1973). In this report, we intend to give a general outline of this type of spectroscopy and to present the results obtained so far. The basic physics underlying phonon generation and detection are described in chapter I, a wider approach being given in the references therein. In chapter II, the different types of junctions are considered with respect to their use. Chapter III deals with the evaporation technique for the superconducting junctions. The last part of this report is devoted to the results that we have obtained on γ-irradiated LiF, pure Si and Phosphorous implanted Si. In these chapters, the limitations of the spectrometer are brought out and suggestions for further work are given [fr

  1. Tunnel magnetoresistance in double spin filter junctions

    International Nuclear Information System (INIS)

    Saffarzadeh, Alireza

    2003-01-01

    We consider a new type of magnetic tunnel junction, which consists of two ferromagnetic tunnel barriers acting as spin filters (SFs), separated by a nonmagnetic metal (NM) layer. Using the transfer matrix method and the free-electron approximation, the dependence of the tunnel magnetoresistance (TMR) on the thickness of the central NM layer, bias voltage and temperature in the double SF junction are studied theoretically. It is shown that the TMR and electron-spin polarization in this structure can reach very large values under suitable conditions. The highest value of the TMR can reach 99%. By an appropriate choice of the thickness of the central NM layer, the degree of spin polarization in this structure will be higher than that of the single SF junctions. These results may be useful in designing future spin-polarized tunnelling devices

  2. Josephson junctions with ferromagnetic alloy interlayer

    Energy Technology Data Exchange (ETDEWEB)

    Himmel, Nico

    2015-07-23

    Josephson junctions are used as active devices in superconducting electronics and quantum information technology. Outstanding properties are their distinct non-linear electrical characteristics and a usually sinusoidal relation between the current and the superconducting phase difference across the junction. In general the insertion of ferromagnetic material in the barrier of a Josephson junction is associated with a suppression of superconducting correlations. But also new phenomena can arise which may allow new circuit layouts and enhance the performance of applications. This thesis presents a systematic investigation for two concepts to fabricate Josephson junctions with a rather uncommon negative critical current. Such devices exhibit an intrinsic phase slip of π between the electrodes, so they are also known as π junctions. Both studies go well beyond existing experiments and in one system a π junction is shown for the first time. All the thin film junctions are based on superconducting Nb electrodes. In a first approach, barriers made from Si and Fe were investigated with respect to the realisation of π junctions by spin-flip processes. The distribution of Fe in the Si matrix was varied from pure layers to disperse compounds. The systematic fabrication of alloy barriers was facilitated by the development of a novel timing-based combinatorial sputtering technique for planetary deposition systems. An orthogonal gradient approach allowed to create binary layer libraries with independent variations of thickness and composition. Second, Nb vertical stroke AlO{sub x} vertical stroke Nb vertical stroke Ni{sub 60}Cu{sub 40} vertical stroke Nb (SIsFS) double barrier junctions were experimentally studied for the occurrence of proximity effect induced order parameter oscillations. Detailed dependencies of the critical current density on the thickness of s-layer and F-layer were acquired and show a remarkable agreement to existing theoretical predictions. Especially

  3. Electrical analog of a Josephson junction

    International Nuclear Information System (INIS)

    Goldman, A.M.

    1979-01-01

    It is noted that a mathematical description of the phase-coupling of two oscillators synchronized by a phase-lock-loop under the influence of thermal white noise is analogous to that of the phase coupling of two superconductors in a Josephson junction also under the influence of noise. This analogy may be useful in studying threshold instabilities of the Josephson junction in regimes not restricted to the case of large damping. This is of interest because the behavior of the mean voltage near the threshold current can be characterized by critical exponents which resemble those exhibited by an order parameter of a continuous phase transition. As it is possible to couple a collection of oscillators together in a chain, the oscillator analogy may also be useful in exploring the dynamics and statistical mechanics of coupled junctions

  4. Thermionic refrigeration at CNT-CNT junctions

    Science.gov (United States)

    Li, C.; Pipe, K. P.

    2016-10-01

    Monte Carlo (MC) simulation is used to study carrier energy relaxation following thermionic emission at the junction of two van der Waals bonded single-walled carbon nanotubes (SWCNTs). An energy-dependent transmission probability gives rise to energy filtering at the junction, which is predicted to increase the average electron transport energy by as much as 0.115 eV, leading to an effective Seebeck coefficient of 386 μV/K. MC results predict a long energy relaxation length (˜8 μm) for hot electrons crossing the junction into the barrier SWCNT. For SWCNTs of optimal length, an analytical transport model is used to show that thermionic cooling can outweigh parasitic heat conduction due to high SWCNT thermal conductivity, leading to a significant cooling capacity (2.4 × 106 W/cm2).

  5. Josephson junctions with ferromagnetic alloy interlayer

    International Nuclear Information System (INIS)

    Himmel, Nico

    2015-01-01

    Josephson junctions are used as active devices in superconducting electronics and quantum information technology. Outstanding properties are their distinct non-linear electrical characteristics and a usually sinusoidal relation between the current and the superconducting phase difference across the junction. In general the insertion of ferromagnetic material in the barrier of a Josephson junction is associated with a suppression of superconducting correlations. But also new phenomena can arise which may allow new circuit layouts and enhance the performance of applications. This thesis presents a systematic investigation for two concepts to fabricate Josephson junctions with a rather uncommon negative critical current. Such devices exhibit an intrinsic phase slip of π between the electrodes, so they are also known as π junctions. Both studies go well beyond existing experiments and in one system a π junction is shown for the first time. All the thin film junctions are based on superconducting Nb electrodes. In a first approach, barriers made from Si and Fe were investigated with respect to the realisation of π junctions by spin-flip processes. The distribution of Fe in the Si matrix was varied from pure layers to disperse compounds. The systematic fabrication of alloy barriers was facilitated by the development of a novel timing-based combinatorial sputtering technique for planetary deposition systems. An orthogonal gradient approach allowed to create binary layer libraries with independent variations of thickness and composition. Second, Nb vertical stroke AlO x vertical stroke Nb vertical stroke Ni 60 Cu 40 vertical stroke Nb (SIsFS) double barrier junctions were experimentally studied for the occurrence of proximity effect induced order parameter oscillations. Detailed dependencies of the critical current density on the thickness of s-layer and F-layer were acquired and show a remarkable agreement to existing theoretical predictions. Especially a variation of

  6. Facile fabrication of p-n heterojunctions for Cu2O submicroparticles deposited on anatase TiO2 nanobelts

    International Nuclear Information System (INIS)

    Li, Li; Lei, Jingguo; Ji, Tianhao

    2011-01-01

    Graphical abstract: Cu 2 O particle-deposited TiO 2 nanobelts with p-n semiconductor heterojunction structure were successfully prepared via two-step preparation process, and their visible-light photodegradation activities of Rhodamine B were investigated in detail. Highlights: → Cu 2 O particle-deposited TiO 2 nanobelts mainly with diameters in a range of 200-400 nm were successfully prepared. → The amount of Cu 2 O particles deposited on TiO 2 nanobelts can be tuned. → The composite structure with Cu 2 O particles and TiO 2 nanobelts exhibits p-n semiconductor heterojunction performance. → Photocatalytic properties of such composites. -- Abstract: In this paper, Cu 2 O particle-deposited TiO 2 nanobelts with p-n semiconductor heterojunction structure were successfully prepared via a two-step preparation process to investigate electron-transfer performance between p-type Cu 2 O and n-type TiO 2 . Various measurement results confirm that the amount of pure Cu 2 O submicroparticles, with diameters within the range of 200-400 nm and deposited on the surface of TiO 2 nanobelts, can be controlled, and that the purity of Cu 2 O is heavily affected by reaction time. Visible-light photodegradation activities of Rhodamine B show that photocatalysts have little or no photocatalytic activities mainly due to their p-n heterojunction structure, indicating that there hardly appears any electron-transfer from Cu 2 O to TiO 2 .

  7. Introducing the C.E.P.N. (Center for the assessment of protection in the nuclear field)

    International Nuclear Information System (INIS)

    Jammet, H.P.

    1981-01-01

    The center for the assessment of protection in the nuclear field (C.E.P.N.) was set up by Electricite de France (E.D.F.) and the Commissariat a l'Energie Atomique (C.E.A.) in May 1976. Dr JAMMET, one of its promoters, relates the circumstances and motivations of its creation and presents the general lines of the purposes and programmes presently developed by the center [fr

  8. On the strong metric dimension of generalized butterfly graph, starbarbell graph, and {C}_{m}\\odot {P}_{n} graph

    Science.gov (United States)

    Yunia Mayasari, Ratih; Atmojo Kusmayadi, Tri

    2018-04-01

    Let G be a connected graph with vertex set V(G) and edge set E(G). For every pair of vertices u,v\\in V(G), the interval I[u, v] between u and v to be the collection of all vertices that belong to some shortest u ‑ v path. A vertex s\\in V(G) strongly resolves two vertices u and v if u belongs to a shortest v ‑ s path or v belongs to a shortest u ‑ s path. A vertex set S of G is a strong resolving set of G if every two distinct vertices of G are strongly resolved by some vertex of S. The strong metric basis of G is a strong resolving set with minimal cardinality. The strong metric dimension sdim(G) of a graph G is defined as the cardinality of strong metric basis. In this paper we determine the strong metric dimension of a generalized butterfly graph, starbarbell graph, and {C}mȯ {P}n graph. We obtain the strong metric dimension of generalized butterfly graph is sdim(BFn ) = 2n ‑ 2. The strong metric dimension of starbarbell graph is sdim(S{B}{m1,{m}2,\\ldots,{m}n})={\\sum }i=1n({m}i-1)-1. The strong metric dimension of {C}mȯ {P}n graph are sdim({C}mȯ {P}n)=2m-1 for m > 3 and n = 2, and sdim({C}mȯ {P}n)=2m-2 for m > 3 and n > 2.

  9. Significant Prognostic Factors for Completely Resected pN2 Non-small Cell Lung Cancer without Neoadjuvant Therapy

    Science.gov (United States)

    Nakao, Masayuki; Mun, Mingyon; Nakagawa, Ken; Nishio, Makoto; Ishikawa, Yuichi; Okumura, Sakae

    2015-01-01

    Purpose: To identify prognostic factors for pathologic N2 (pN2) non-small cell lung cancer (NSCLC) treated by surgical resection. Methods: Between 1990 and 2009, 287 patients with pN2 NSCLC underwent curative resection at the Cancer Institute Hospital without preoperative treatment. Results: The 5-year overall survival (OS), cancer-specific survival (CSS), and recurrence-free survival (RFS) rates were 46%, 55% and 24%, respectively. The median follow-up time was 80 months. Multivariate analysis identified four independent predictors for poor OS: multiple-zone mediastinal lymph node metastasis (hazard ratio [HR], 1.616; p = 0.003); ipsilateral intrapulmonary metastasis (HR, 1.042; p = 0.002); tumor size >30 mm (HR, 1.013; p = 0.002); and clinical stage N1 or N2 (HR, 1.051; p = 0.030). Multivariate analysis identified three independent predictors for poor RFS: multiple-zone mediastinal lymph node metastasis (HR, 1.457; p = 0.011); ipsilateral intrapulmonary metastasis (HR, 1.040; p = 0.002); and tumor size >30 mm (HR, 1.008; p = 0.032). Conclusion: Multiple-zone mediastinal lymph node metastasis, ipsilateral intrapulmonary metastasis, and tumor size >30 mm were common independent prognostic factors of OS, CSS, and RFS in pN2 NSCLC. PMID:25740454

  10. Comparison of polarization and analyzing power for the /sup 15/N(p,n)/sup 15/O reaction

    Energy Technology Data Exchange (ETDEWEB)

    Byrd, R.C.; Tornow, W.; Lisowski, P.W.; Murphy, K.; Walter, R.L. (Duke Univ., Durham, NC (USA). Dept. of Physics; Triangle Universities Nuclear Lab., Durham, NC (USA))

    1983-11-21

    The analyzing power Asub(y)(theta) and polarization Psup(y)(theta) for the /sup 15/N(p,n/sub 0/)/sup 15/O reaction have been measured for Esub(p)=4.5-11.3 MeV. The values of the two observables are nearly the same above 11 MeV, where a ''quasi-elastic'' view of the (p,n) reaction to the analog state should be applicable. Below 10 MeV, however, large spin-flip amplitudes and isospin-mixing ratios provide the two major conditions needed to obtain Psup(y)(theta)not=Asub(y)(theta) and dramatic differences between the two observables are observed. The size of the differences and their dependence on energy are similar to the results predicted by shell-model calculations. The Psup(y)(theta) and Asub(y)(theta) measurements have been combined with existing cross-section data to provide information about spin-flip processes. We also comment on the connection between comparisons of Psup(y)(theta) and Asup(y)(theta) in charge-symmetric (p,n) reactions and the recent controversial measurements of a difference between the values of Psup(y)(theta) for a reaction and Asub(y)(theta) for the inverse reaction.

  11. Lateral flow assays

    NARCIS (Netherlands)

    Posthuma-Trumpie, G.A.; Amerongen, van A.

    2012-01-01

    A simple version of immunochemical-based methods is the Lateral Flow Assay (LFA). It is a dry chemistry technique (reagents are included); the fluid from the sample runs through a porous membrane (often nitrocellulose) by capillary force. Typically the membrane is cut as a strip of 0.5*5 cm. In most

  12. Stamina in later life.

    Science.gov (United States)

    Colerick, E J

    1985-01-01

    Patterns of aging raise a number of important questions concerning the paths to successful adaptation. What gives some older individuals their staying power in the face of misfortune? What causes others to function less effectively when stressed, to resist change? Clearly, the margin of safety, the degree of elasticity and resilience varies across individuals in the later years. This study focuses on event histories and current behavior of 62 elderly men and women (Phase I) and reports by their confidants (N = 62; Phase II). A central proposition, that stamina in later life depends, in part, on the appraisal of previous events involving loss is investigated using a model that incorporates aspects of earlier life, cognitive appraisal and clinically judged dimensions of stamina in old age. Multivariate (particularly path analytic) techniques are used to test the links between variable foci. Results suggest that antecedents of stamina involve the interaction of social resources and cognitive orientations. Specifically, stamina in later life is contingent, for the most part, on a triumphant, positive outlook during periods of adversity. Elderly so oriented are also those with robust health histories and marked educational accomplishments. Conversely, persons who view situations involving loss as threatening, overwhelming and potentially defeating experience no such outcome; low levels of stamina mark their later years. Interestingly, quality childhood ties matter for stamina in old age only by increasing the likelihood of perceptions of a supportive environment during hard times. The findings corroborate the general pattern of research documenting the importance of cognitive orientations in adaptive processes.

  13. The lateral angle revisited

    DEFF Research Database (Denmark)

    Morgan, Jeannie; Lynnerup, Niels; Hoppa, R.D.

    2013-01-01

    measurements taken from computed tomography (CT) scans. Previous reports have observed that the lateral angle size in females is significantly larger than in males. The method was applied to an independent series of 77 postmortem CT scans (42 males, 35 females) to validate its accuracy and reliability...... method appears to be of minimal practical use in forensic anthropology and archeology....

  14. Laterally situated sinus pericranii

    International Nuclear Information System (INIS)

    Koshu, K.; Takahashi, S.

    1981-01-01

    Sinus pericranii has been reported to be situated usually along the midline. Two cases of laterally situated sinus pericranii are presented. Venous blood was obtained by puncturing the tumors directly. Injection of contrast medium into the tumors demonstrated a communication between the tumors and the intracranial venous sinuses through marked diploic veins. (orig.)

  15. Mechanically controllable break junctions for molecular electronics.

    Science.gov (United States)

    Xiang, Dong; Jeong, Hyunhak; Lee, Takhee; Mayer, Dirk

    2013-09-20

    A mechanically controllable break junction (MCBJ) represents a fundamental technique for the investigation of molecular electronic junctions, especially for the study of the electronic properties of single molecules. With unique advantages, the MCBJ technique has provided substantial insight into charge transport processes in molecules. In this review, the techniques for sample fabrication, operation and the various applications of MCBJs are introduced and the history, challenges and future of MCBJs are discussed. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  16. Microscopic tunneling theory of long Josephson junctions

    DEFF Research Database (Denmark)

    Grønbech-Jensen, N.; Hattel, Søren A.; Samuelsen, Mogens Rugholm

    1992-01-01

    We present a numerical scheme for solving a nonlinear partial integro-differential equation with nonlocal time dependence. The equation describes the dynamics in a long Josephson junction modeled by use of the microscopic theory for tunneling between superconductors. We demonstrate that the detai......We present a numerical scheme for solving a nonlinear partial integro-differential equation with nonlocal time dependence. The equation describes the dynamics in a long Josephson junction modeled by use of the microscopic theory for tunneling between superconductors. We demonstrate...

  17. Fluctuation of heat current in Josephson junctions

    Directory of Open Access Journals (Sweden)

    P. Virtanen

    2015-02-01

    Full Text Available We discuss the statistics of heat current between two superconductors at different temperatures connected by a generic weak link. As the electronic heat in superconductors is carried by Bogoliubov quasiparticles, the heat transport fluctuations follow the Levitov–Lesovik relation. We identify the energy-dependent quasiparticle transmission probabilities and discuss the resulting probability density and fluctuation relations of the heat current. We consider multichannel junctions, and find that heat transport in diffusive junctions is unique in that its statistics is independent of the phase difference between the superconductors.

  18. Superconductive junctions for x-ray spectroscopy

    International Nuclear Information System (INIS)

    Grand, J.B. le; Bruijn, M.P.; Frericks, M.; Korte, P.A.J. de; Houwman, E.P.; Flokstra, J.

    1992-01-01

    Biasing of SIS-junctions for the purpose of high energy resolution x-ray detection is complicated by the presence of a DC Josephson current and AC Josephson current resonances, so that a large magnetic field is normally used for the suppression of these Josephson features. A transimpedance amplifier is proposed for biasing and signal amplification at low magnetic field. X-ray spectroscopy detectors for astronomy require a high detection efficiency in the 0.5-10 keV energy band and a reasonable (∼1 cm 2 ) detector area. Calculations on absorber-junctions combinations which might meet these requirements are presented. (author) 9 refs.; 10 figs

  19. Electroplated Ni on the PN Junction Semiconductor

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Jin Joo; Uhm, Young Rang; Son, Kwang Jae; Kim, Jong Bum; Choi, Sang Moo; Park, Jong Han; Hong, Jintae [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of)

    2015-05-15

    Nickel (Ni) electroplating was implemented by using a metal Ni powder in order to establish a Ni-63 plating condition on the PN junction semiconductor needed for production of betavoltaic battery. PN junction semiconductors with a Ni seed layer of 500 and 1000 A were coated with Ni at current density from 10 to 50 mA cm{sup 2}. The surface roughness and average grain size of Ni deposits were investigated by XRD and SEM techniques. The roughness of Ni deposit was increased as the current density was increased, and decreased as the thickness of Ni seed layer was increased.

  20. Electroplated Ni on the PN Junction Semiconductor

    International Nuclear Information System (INIS)

    Kim, Jin Joo; Uhm, Young Rang; Son, Kwang Jae; Kim, Jong Bum; Choi, Sang Moo; Park, Jong Han; Hong, Jintae

    2015-01-01

    Nickel (Ni) electroplating was implemented by using a metal Ni powder in order to establish a Ni-63 plating condition on the PN junction semiconductor needed for production of betavoltaic battery. PN junction semiconductors with a Ni seed layer of 500 and 1000 A were coated with Ni at current density from 10 to 50 mA cm 2 . The surface roughness and average grain size of Ni deposits were investigated by XRD and SEM techniques. The roughness of Ni deposit was increased as the current density was increased, and decreased as the thickness of Ni seed layer was increased

  1. Gap junctions-guards of excitability

    DEFF Research Database (Denmark)

    Stroemlund, Line Waring; Jensen, Christa Funch; Qvortrup, Klaus

    2015-01-01

    Cardiomyocytes are connected by mechanical and electrical junctions located at the intercalated discs (IDs). Although these structures have long been known, it is becoming increasingly clear that their components interact. This review describes the involvement of the ID in electrical disturbances...... of the heart and focuses on the role of the gap junctional protein connexin 43 (Cx43). Current evidence shows that Cx43 plays a crucial role in organizing microtubules at the intercalated disc and thereby regulating the trafficking of the cardiac sodium channel NaV1.5 to the membrane....

  2. Common features of a vortex structure in long exponentially shaped Josephson junctions and Josephson junctions with inhomogeneities

    International Nuclear Information System (INIS)

    Boyadjiev, T.L.; Semerdjieva, E.G.; Shukrinov, Yu.M.

    2007-01-01

    We study the vortex structure in three different models of the long Josephson junction: the exponentially shaped Josephson junction and the Josephson junctions with the resistor and the shunt inhomogeneities in the barrier layer. For these three models the critical curves 'critical current-magnetic field' are numerically constructed. We develop the idea of the equivalence of the exponentially shaped Josephson junction and the rectangular junction with the distributed inhomogeneity and demonstrate that at some parameters of the shunt and the resistor inhomogeneities in the ends of the junction the corresponding critical curves are very close to the exponentially shaped one

  3. Rapid prototyping of magnetic tunnel junctions with focused ion beam processes

    International Nuclear Information System (INIS)

    Persson, Anders; Thornell, Greger; Nguyen, Hugo

    2010-01-01

    Submicron-sized magnetic tunnel junctions (MTJs) are most often fabricated by time-consuming and expensive e-beam lithography. From a research and development perspective, a short lead time is one of the major concerns. Here, a rapid process scheme for fabrication of micrometre size MTJs with focused ion beam processes is presented. The magnetic properties of the fabricated junctions are investigated in terms of magnetic domain structure, tunnelling magnetoresistance (TMR) and coercivity, with extra attention given to the effect of Ga implantation from the ion beam. In particular, the effect of the implantation on the minimum junction size and the magnetization of the sensing layer are studied. In the latter case, magnetic force microscopy and micromagnetic simulations, with the object-oriented micromagnetic framework (OOMMF), are used to study the magnetization reversal. The fabricated junctions show considerable coercivity both along their hard and easy axes. Interestingly, the sensing layer exhibits two remanent states: one with a single and one with a double domain. The hard axis TMR loop has kinks at about ±20 mT which is attributed to a non-uniform lateral coercivity, where the rim of the junctions, which is subjected to Ga implantation from the flank of the ion beam, is more coercive than the unirradiated centre. The width of the coercive rim is estimated to be 160 nm from the hard axis TMR loop. The easy axis TMR loop shows more coercivity than an unirradiated junction and, this too, is found to stem from the coercive rim, as seen from the simulations. It is concluded that the process scheme has three major advantages. Firstly, it has a high lateral and depth resolution—the depth resolution is enhanced by end point detection—and is capable of making junctions of sizes down towards the limit set by the width of the irradiated rim. Secondly, the most delicate process steps are performed in the unbroken vacuum enabling the use of materials prone to

  4. Improved Optics in Monolithic Perovskite/Silicon Tandem Solar Cells with a Nanocrystalline Silicon Recombination Junction

    KAUST Repository

    Sahli, Florent

    2017-10-09

    Perovskite/silicon tandem solar cells are increasingly recognized as promi­sing candidates for next-generation photovoltaics with performance beyond the single-junction limit at potentially low production costs. Current designs for monolithic tandems rely on transparent conductive oxides as an intermediate recombination layer, which lead to optical losses and reduced shunt resistance. An improved recombination junction based on nanocrystalline silicon layers to mitigate these losses is demonstrated. When employed in monolithic perovskite/silicon heterojunction tandem cells with a planar front side, this junction is found to increase the bottom cell photocurrent by more than 1 mA cm−2. In combination with a cesium-based perovskite top cell, this leads to tandem cell power-conversion efficiencies of up to 22.7% obtained from J–V measurements and steady-state efficiencies of up to 22.0% during maximum power point tracking. Thanks to its low lateral conductivity, the nanocrystalline silicon recombination junction enables upscaling of monolithic perovskite/silicon heterojunction tandem cells, resulting in a 12.96 cm2 monolithic tandem cell with a steady-state efficiency of 18%.

  5. Scissors stab wound to the cervical spinal cord at the craniocervical junction.

    Science.gov (United States)

    Zhang, Xiao-Yong; Yang, Ying-Ming

    2016-06-01

    Stab wounds resulting in spinal cord injury of the craniocervical junction are rare. A scissors stab wound to the cervical spinal cord has been reported only once in the literature. This paper aimed to report a case of Brown-Séquard-plus syndrome in an 8-year-old boy secondary to a scissors stab wound at the craniocervical junction. Case report and review of the literature. Case report of an 8-year-old boy accidentally stabbed in the neck by scissors, which were thrown as a dart. The case study of an 8-year-old boy who was hospitalized because of a scissors stab wound at the craniocervical junction. The patient developed Brown-Séquard-plus syndrome on the left side of the body. Magnetic resonance imaging revealed a laceration of the spinal cord at the craniocervical junction with cerebrospinal fluid leakage. Careful cleansing and interrupted sutures of the wounds were performed to prevent cerebrospinal fluid leakage. Rehabilitation therapy was performed 2 days later. A follow-up examination revealed complete recovery of the neurologic deficit 8 months post-injury. Treatment of scissors stab wounds to the cervical spinal cord, whether conservative management or thorough surgical exploration, should be individualized based on history, examination, and imaging. As shown in this case report, despite conservative management, complete recovery, which was unexpected, was attributed to the initial mild laceration of the spinal cord and ipsilateral spinal cord functional compensation. Copyright © 2016 Elsevier Inc. All rights reserved.

  6. House Dust Mite Der p 1 Effects on Sinonasal Epithelial Tight Junctions

    Science.gov (United States)

    Henriquez, Oswaldo A.; Beste, Kyle Den; Hoddeson, Elizabeth K.; Parkos, Charles A.; Nusrat, Asma; Wise, Sarah K.

    2013-01-01

    Background Epithelial permeability is highly dependent upon the integrity of tight junctions, cell-cell adhesion complexes located at the apical aspect of the lateral membrane of polarized epithelial cells. We hypothesize that sinonasal epithelial exposure to Der p 1 house dust mite antigen decreases expression of tight junction proteins (TJPs), representing a potential mechanism for increased permeability and presentation of antigens across the sinonasal epithelial layer. Methods Confluent cultured primary human sinonasal epithelial cells were exposed to recombinant Der p 1 antigen versus control, and transepithelial resistance measurements were performed over 24 hours. Antibody staining for a panel of tight junction proteins was examined with immunofluorescence/confocal microscopy and Western blotting. Tissue for these experiments was obtained from 4 patients total. Results Der p 1 exposed sinonasal cells showed a marked decrease in transepithelial resistance when compared to control cells. In addition, results of Western immunoblot and immunofluorescent labeling demonstrated decreased expression of TJPs claudin-1 and junction adhesion molecule-A (JAM-A) in Der p 1 exposed cultured sinonasal cells versus controls. Conclusion Der p 1 antigen exposure decreases sinonasal epithelium TJP expression, most notably seen in JAM-A and claudin-1 in these preliminary experiments. This decreased TJP expression likely contributes to increased epithelial permeability and represents a potential mechanism for transepithelial antigen exposure in allergic rhinitis. PMID:23592402

  7. Gap junctions and hemichannels composed of connexins: potential therapeutic targets for neurodegenerative diseases

    Directory of Open Access Journals (Sweden)

    Hideyuki eTakeuchi

    2014-09-01

    Full Text Available Microglia are macrophage-like resident immune cells that contribute to the maintenance of homeostasis in the central nervous system (CNS. Abnormal activation of microglia can cause damage in the CNS, and accumulation of activated microglia is a characteristic pathological observation in neurologic conditions such as trauma, stroke, inflammation, epilepsy, and neurodegenerative diseases. Activated microglia secrete high levels of glutamate, which damages CNS cells and has been implicated as a major cause of neurodegeneration in these conditions. Glutamate-receptor blockers and microglia inhibitors (e.g. minocycline have been examined as therapeutic candidates for several neurodegenerative diseases; however, these compounds exerted little therapeutic benefit because they either perturbed physiological glutamate signals or suppressed the actions of protective microglia. The ideal therapeutic approach would hamper the deleterious roles of activated microglia without diminishing their protective effects. We recently found that abnormally activated microglia secrete glutamate via gap-junction hemichannels on the cell surface. Moreover, administration of gap-junction inhibitors significantly suppressed excessive microglial glutamate release and improved disease symptoms in animal models of neurologic conditions such as stroke, multiple sclerosis, amyotrophic lateral sclerosis, and Alzheimer’s disease. Recent evidence also suggests that neuronal and glial communication via gap junctions amplifies neuroinflammation and neurodegeneration. Elucidation of the precise pathologic roles of gap junctions and hemichannels may lead to a novel therapeutic strategies that can slow and halt the progression of neurodegenerative diseases.

  8. Improved Optics in Monolithic Perovskite/Silicon Tandem Solar Cells with a Nanocrystalline Silicon Recombination Junction

    KAUST Repository

    Sahli, Florent; Kamino, Brett A.; Werner, Jé ré mie; Brä uninger, Matthias; Paviet-Salomon, Bertrand; Barraud, Loris; Monnard, Raphaë l; Seif, Johannes Peter; Tomasi, Andrea; Jeangros, Quentin; Hessler-Wyser, Aï cha; De Wolf, Stefaan; Despeisse, Matthieu; Nicolay, Sylvain; Niesen, Bjoern; Ballif, Christophe

    2017-01-01

    Perovskite/silicon tandem solar cells are increasingly recognized as promi­sing candidates for next-generation photovoltaics with performance beyond the single-junction limit at potentially low production costs. Current designs for monolithic tandems rely on transparent conductive oxides as an intermediate recombination layer, which lead to optical losses and reduced shunt resistance. An improved recombination junction based on nanocrystalline silicon layers to mitigate these losses is demonstrated. When employed in monolithic perovskite/silicon heterojunction tandem cells with a planar front side, this junction is found to increase the bottom cell photocurrent by more than 1 mA cm−2. In combination with a cesium-based perovskite top cell, this leads to tandem cell power-conversion efficiencies of up to 22.7% obtained from J–V measurements and steady-state efficiencies of up to 22.0% during maximum power point tracking. Thanks to its low lateral conductivity, the nanocrystalline silicon recombination junction enables upscaling of monolithic perovskite/silicon heterojunction tandem cells, resulting in a 12.96 cm2 monolithic tandem cell with a steady-state efficiency of 18%.

  9. Structure modeling and mutational analysis of gap junction beta 2 ...

    African Journals Online (AJOL)

    Yomi

    2012-04-03

    Apr 3, 2012 ... Three dimensional (3 D) structure is very useful for understanding biological functions. Gap junction beta 2 (GJB2), human gene encoding for gap junction beta 2 protein is involved in ... Research in deafness became real.

  10. Lateral Attitude Change.

    Science.gov (United States)

    Glaser, Tina; Dickel, Nina; Liersch, Benjamin; Rees, Jonas; Süssenbach, Philipp; Bohner, Gerd

    2015-08-01

    The authors propose a framework distinguishing two types of lateral attitude change (LAC): (a) generalization effects, where attitude change toward a focal object transfers to related objects, and (b) displacement effects, where only related attitudes change but the focal attitude does not change. They bring together examples of LAC from various domains of research, outline the conditions and underlying processes of each type of LAC, and develop a theoretical framework that enables researchers to study LAC more systematically in the future. Compared with established theories of attitude change, the LAC framework focuses on lateral instead of focal attitude change and encompasses both generalization and displacement. Novel predictions and designs for studying LAC are presented. © 2014 by the Society for Personality and Social Psychology, Inc.

  11. Macroscopic Refrigeration Using Superconducting Tunnel Junctions

    Science.gov (United States)

    Lowell, Peter; O'Neil, Galen; Underwood, Jason; Zhang, Xiaohang; Ullom, Joel

    2014-03-01

    Sub-kelvin temperatures are often a prerequisite for modern scientific experiments, such as quantum information processing, astrophysical missions looking for dark energy signatures and tabletop time resolved x-ray spectroscopy. Existing methods of reaching these temperatures, such as dilution refrigerators, are bulky and costly. In order to increase the accessibility of sub-Kelvin temperatures, we have developed a new method of refrigeration using normal-metal/insulator/superconductor (NIS) tunnel junctions. NIS junctions cool the electrons in the normal metal since the hottest electrons selectively tunnel from the normal metal into the superconductor. By extending the normal metal onto a thermally isolated membrane, the cold electrons can cool the phonons through the electron-phonon coupling. When these junctions are combined with a pumped 3He system, they provide a potentially inexpensive method of reaching these temperatures. Using only three devices, each with a junction area of approximately 3,500 μm2, we have cooled a 2 cm3 Cu plate from 290 mK to 256 mK. We will present these experimental results along with recent modeling predictions that strongly suggest that further refinements will allow cooling from 300 mK to 120 mK. This work is supported by the NASA APRA program.

  12. Characterization of magnetic tunnel junction test pads

    DEFF Research Database (Denmark)

    Østerberg, Frederik Westergaard; Kjær, Daniel; Nielsen, Peter Folmer

    2015-01-01

    We show experimentally as well as theoretically that patterned magnetic tunnel junctions can be characterized using the current-in-plane tunneling (CIPT) method, and the key parameters, the resistance-area product (RA) and the tunnel magnetoresistance (TMR), can be determined. The CIPT method...

  13. Double-barrier junction based dc SQUID

    NARCIS (Netherlands)

    Bartolomé, M.E.; Brinkman, Alexander; Flokstra, Jakob; Golubov, Alexandre Avraamovitch; Rogalla, Horst

    2000-01-01

    dc SQUIDs based on double-barrier Nb/Al/AlOx/Al/AlOx/Al/Nb junctions (DBSQs) have been fabricated and tested for the first time. The current–voltage curves have been measured at temperatures down to 1.4 K. The critical current, Ic, dependence on the temperature T is partially described by the

  14. Anatomy of the human atrioventricular junctions revisited

    NARCIS (Netherlands)

    Anderson, R. H.; Ho, S. Y.; Becker, A. E.

    2000-01-01

    There have been suggestions made recently that our understanding of the atrioventricular junctions of the heart is less than adequate, with claims for several new findings concerning the arrangement of the ordinary working myocardium and the specialised pathways for atrioventricular conduction. In

  15. CANFLEX fuel bundle junction pressure drop

    International Nuclear Information System (INIS)

    Chung, H. J.; Chung, C. H.; Jun, J. S.; Hong, S. D.; Chang, S. K.; Kim, B. D.

    1996-11-01

    This report describes the junction pressure drop test results which are to used to determine the alignment angle between bundles to achieve the most probable fuel string pressure drop for randomly aligned bundles for use in the fuel string total pressure drop test. (author). 4 tabs., 17 figs

  16. Gap junction diseases of the skin.

    NARCIS (Netherlands)

    Steensel, M.A.M. van

    2004-01-01

    Gap junctions are intercellular channels that allow the passage of water, ions, and small molecules. They are involved in quick, short-range messaging between cells and are found in skin, nervous tissue, heart, and muscle. An increasing number of hereditary skin disorders appear to be caused by

  17. Fluxon density waves in long Josephson junctions

    DEFF Research Database (Denmark)

    Olsen, O. H.; Ustinov, A. V.; Pedersen, Niels Falsig

    1993-01-01

    Numerical simulations of the multiple fluxon dynamics stimulated by an external oscillating force applied at a boundary of a long Josephson junction are presented. The calculated IV characteristics agree well with a recent experimental observation of rf-induced satellite flux-flow steps. The volt...... density waves....

  18. Soliton excitations in Josephson tunnel junctions

    DEFF Research Database (Denmark)

    Lomdahl, P. S.; Sørensen, O. H.; Christiansen, Peter Leth

    1982-01-01

    A detailed numerical study of a sine-Gordon model of the Josephson tunnel junction is compared with experimental measurements on junctions with different L / λJ ratios. The soliton picture is found to apply well on both relatively long (L / λJ=6) and intermediate (L / λJ=2) junctions. We find good...... agreement for the current-voltage characteristics, power output, and for the shape and height of the zero-field steps (ZFS). Two distinct modes of soliton oscillations are observed: (i) a bunched or congealed mode giving rise to the fundamental frequency f1 on all ZFS's and (ii) a "symmetric" mode which...... on the Nth ZFS yields the frequency Nf1 Coexistence of two adjacent frequencies is found on the third ZFS of the longer junction (L / λJ=6) in a narrow range of bias current as also found in the experiments. Small asymmetries in the experimental environment, a weak magnetic field, e.g., is introduced via...

  19. Dissipative current in SIFS Josephson junctions

    NARCIS (Netherlands)

    Vasenko, A.; Kawabata, S.; Golubov, Alexandre Avraamovitch; Kupriyanov, M. Yu; Hekking, F.W.J.

    2010-01-01

    We investigate superconductor/insulator/ferromagnet/superconductor (SIFS) tunnel Josephson junctions in the dirty limit, using the quasiclassical theory. We consider the case of a strong tunnel barrier such that the left S layer and the right FS bilayer are decoupled. We calculate quantitatively the

  20. CANFLEX fuel bundle junction pressure drop

    Energy Technology Data Exchange (ETDEWEB)

    Chung, H. J.; Chung, C. H.; Jun, J. S.; Hong, S. D.; Chang, S. K.; Kim, B. D.

    1996-11-01

    This report describes the junction pressure drop test results which are to used to determine the alignment angle between bundles to achieve the most probable fuel string pressure drop for randomly aligned bundles for use in the fuel string total pressure drop test. (author). 4 tabs., 17 figs.

  1. The functional anatomy of the ureterovesical junction

    NARCIS (Netherlands)

    Thomson, A. S.; Dabhoiwala, N. F.; Verbeek, F. J.; Lamers, W. H.

    1994-01-01

    To obtain a new insight into the anti-reflux mechanism of the ureterovesical junction by studying the topographical anatomy of the juxta- and intravesical ureter and its relationship to the surrounding bladder musculature. Fresh pig bladders were fixed, frozen and serially sectioned. Enzyme

  2. Critical current of pure SNS junctions

    International Nuclear Information System (INIS)

    Golub, A.A.; Bezzub, O.P.

    1982-01-01

    Boundary conditions at the superconductor-normal metal interface are determined, taking into account the differences in the effective masses and the density of states of the metals constituting the transition and assumed to be pure. The potential barrier of the interface is chosen to be zero. The critical current of the junction is calculated [ru

  3. Improving transition voltage spectroscopy of molecular junctions

    DEFF Research Database (Denmark)

    Markussen, Troels; Chen, Jingzhe; Thygesen, Kristian Sommer

    2011-01-01

    Transition voltage spectroscopy (TVS) is a promising spectroscopic tool for molecular junctions. The principles in TVS is to find the minimum on a Fowler-Nordheim plot where ln(I/V2) is plotted against 1/V and relate the voltage at the minimum Vmin to the closest molecular level. Importantly, Vmin...

  4. Fractional Solitons in Excitonic Josephson Junctions

    Science.gov (United States)

    Su, Jung-Jung; Hsu, Ya-Fen

    The Josephson effect is especially appealing because it reveals macroscopically the quantum order and phase. Here we study this effect in an excitonic Josephson junction: a conjunct of two exciton condensates with a relative phase ϕ0 applied. Such a junction is proposed to take place in the quantum Hall bilayer (QHB) that makes it subtler than in superconductor because of the counterflow of excitonic supercurrent and the interlayer tunneling in QHB. We treat the system theoretically by first mapping it into a pseudospin ferromagnet then describing it by the Landau-Lifshitz-Gilbert equation. In the presence of interlayer tunneling, the excitonic Josephson junction can possess a family of fractional sine-Gordon solitons that resemble the static fractional Josephson vortices in the extended superconducting Josephson junctions. Interestingly, each fractional soliton carries a topological charge Q which is not necessarily a half/full integer but can vary continuously. The resultant current-phase relation (CPR) shows that solitons with Q =ϕ0 / 2 π are the lowest energy states for small ϕ0. When ϕ0 > π , solitons with Q =ϕ0 / 2 π - 1 take place - the polarity of CPR is then switched.

  5. Constructing carbon nanotube junctions by Ar ion beam irradiation

    International Nuclear Information System (INIS)

    Ishaq, Ahmad; Ni Zhichun; Yan Long; Gong Jinlong; Zhu Dezhang

    2010-01-01

    Carbon nanotubes (CNTs) irradiated by Ar ion beams at elevated temperature were studied. The irradiation-induced defects in CNTs are greatly reduced by elevated temperature. Moreover, the two types of CNT junctions, the crossing junction and the parallel junction, were formed. And the CNT networks may be fabricated by the two types of CNT junctions. The formation process and the corresponding mechanism of CNT networks are discussed.

  6. Organizations Utilize Lateral Relationships

    OpenAIRE

    Jacqueline C.

    2017-01-01

    The structures that subscribe to different organization play a major role and determine how information flows throughout an organization as well as the reporting structure within the organization. In some organization, decision making rely with the top management, and in other organizations, decision making responsibilities may be distributed within the organization. The latter part is what mainly constitutes a lateral structural arrangement where various departments work hand in hand in achi...

  7. Advantages of later motherhood.

    Science.gov (United States)

    Myrskylä, M; Barclay, K; Goisis, A

    2017-01-01

    In high-income countries childbearing has been increasingly postponed since the 1970s and it is crucial to understand the consequences of this demographic shift. The literature has tended to characterize later motherhood as a significant health threat for children and parents. We contribute to this debate by reviewing recent evidence suggesting that an older maternal age can also have positive effects. Literature linking the age at parenthood with the sociodemographic characteristics of the parents, with macrolevel interactions, and with subjective well-being. Comprehensive review of the existing literature. Recent studies show that there can also be advantages associated with later motherhood. First, whilst in past older mothers had low levels of education and large families, currently older mothers tend to have higher education and smaller families than their younger peers. Consequently, children born to older mothers in the past tended to have worse outcomes than children born to younger mothers, whilst the opposite is true in recent cohorts. Second, postponement of childbearing means that the child is born at a later date and in a later birth cohort, and may benefit from secular changes in the macroenvironment. Evidence shows that when the positive trends in the macroenvironment are strong they overweigh the negative effects of reproductive ageing. Third, existing studies show that happiness increases around and after childbirth among older mothers, whereas for younger mothers the effect does not exist or is short-lived. There are important sociodemographic pathways associated with postponement of childbearing which might compensate or even more than compensate for the biological disadvantages associated with reproductive ageing.

  8. A cephalometric method to diagnosis the craniovertebral junction abnormalities in osteogenesis imperfecta patients

    Science.gov (United States)

    Ríos-Rodenas, Mercedes; Gutiérrez-Díez, María-Pilar; Feijóo, Gonzalo; Mourelle, Maria-Rosa; Garcilazo, Mario; Ortega-Aranegui, Ricardo

    2015-01-01

    Osteogenesis imperfecta (OI) is a hereditary bone fragility disorder that in most patients is caused by mutations affecting collagen type I. Their typical oral and craneofacial characteristics (Dentinogenesis imperfecta type I and class III malocclusion), involve the dentist in the multidisciplinary team that treat these patients. It is usual to perform lateral skull radiographs for the orthodontic diagnosis. In addition, this radiograph is useful to analyse the junctional area between skull base and spine, that could be damaged in OI. Pathology in the craneovertebral junction (CVJ) is a serious complication of OI with a prevalence ranging from rare to 37%. To diagnosis early skull base anomalies in these patients, previously the neurological symptoms have been appear, we make a simple cephalometric analysis of the CVJ. This method has four measurements and one angle. Once we calculate the values of the OI patient, we compare the result with the mean and the standard deviations of an age-appropriate average in healthy controls. If the patient has a result more than 2,5 SDs above the age-appropriate average in healthy controls, we should to refer the patient to his/her pediatrician or neurologist. These doctors have to consider acquiring another diagnostic images to be used to determine cranial base measurements with more reliability. Thereby, dentists who treat these patients, must be aware of the normal radiological anatomy of the cervical spine on the lateral cephalogram. Key words:Osteogenesis imperfecta, craniovertebral junction, cephalometric. PMID:25810828

  9. Absolute migration and the evolution of the Rodriguez triple junction ...

    African Journals Online (AJOL)

    The Rodriguez Triple Junction (RTJ) is a junction connecting three mid-ocean ridges in the Indian Ocean: the Southwest Indian Ridge (SWIR), the Central Indian Ridge (CIR) and the Southeast Indian Ridge (SEIR). The evolution of the RTJ has been studied extensively for the past 10 Ma and the triple junction is believed to ...

  10. Junction depth dependence of breakdown in silicon detector diodes

    International Nuclear Information System (INIS)

    Beck, G.A.; Carter, A.A.; Carter, J.R.; Greenwood, N.M.; Lucas, A.D.; Munday, D.J.; Pritchard, T.W.; Robinson, D.; Wilburn, C.D.; Wyllie, K.

    1996-01-01

    The high voltage capability of detector diodes fabricated in the planar process is limited by the high field generated at the edge of the junction.We have fabricated diodes with increased junction depth with respect to our standard process and find a significantly higher breakdown voltage,in reasonable agreement with previous studies of junction breakdown. (orig.)

  11. Long Josephson Junction Stack Coupled to a Cavity

    DEFF Research Database (Denmark)

    Madsen, Søren Peder; Pedersen, Niels Falsig; Groenbech-Jensen, N.

    2007-01-01

    A stack of inductively coupled long Josephson junctions are modeled as a system of coupled sine-Gordon equations. One boundary of the stack is coupled electrically to a resonant cavity. With one fluxon in each Josephson junction, the inter-junction fluxon forces are repulsive. We look at a possible...... transition, induced by the cavity, to a bunched state....

  12. Phenomenological approach to bistable behavior of Josephson junctions

    International Nuclear Information System (INIS)

    Nishi, K.; Nara, S.; Hamanaka, K.

    1985-01-01

    The interaction of unbiased Josephson junction with external electromagnetic field in the presence of externally applied uniform magnetic field is theoretically examined by means of phenomenological treatment. It is proposed that an irradiated junction with suitably chosen parameters shows a bistable behavior of voltage across the junction as a function of the radiation intensity

  13. Systematic study of shallow junction formation on germanium substrates

    DEFF Research Database (Denmark)

    Hellings, Geert; Rosseel, Erik; Clarysse, Trudo

    2011-01-01

    Published results on Ge junctions are benchmarked systematically using RS–XJ plots. The electrical activation level required to meet the ITRS targets is calculated. Additionally, new results are presented on shallow furnace-annealed B junctions and shallow laser-annealed As junctions. Co-implanting...

  14. Back-contacted back-junction silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Mangersnes, Krister

    2010-10-15

    have developed a two-dimensional BC-BJ silicon solar cell device model. The simulations, which are based on the finite element method, have been performed with the ATLAS device simulator within the Silvaco simulation framework from Silvaco Inc., USA. The device model has been used to optimize the design of a BC-BJ silicon solar cell based on experimental results obtained during the work with this thesis. The model is able to quantitatively predict the performance of cells with different designs, qualities, and dimensions through optical and electrical simulations, and thereby giving us a good indication of the efficiency potential of the cell structure. It has also given us valuable insight into the physics determining the performance of a BC-BJ silicon solar cell. From this insight, important conclusions regarding the design rules of this type of solar cell devices could be drawn. Finally, the device model was used to investigate quantum mechanical tunneling mechanisms in the junction between the adjacent, highly-doped regions of opposite polarity on the backside of the cell. Through the simulations we found some simple design rules that need to be followed in order to avoid shunting-like behavior due to unwanted trap-assisted tunneling in the lateral tunneling junction. At the same time, band-to-band tunneling entails potential current breakdowns at low to moderate reverse biases. This implies that local hot-spots can be avoided since the heat distribution under reverse bias will be distributed throughout the whole junction area. Thus, by careful optimization and tailoring of the doping profiles, the tunneling may enable the use of back-junction silicon solar cells in a solar module without the need for bypass diodes. (Author)

  15. The highly enhanced visible light photocatalytic degradation of gaseous o-dichlorobenzene through fabricating like-flowers BiPO{sub 4}/BiOBr p-n heterojunction composites

    Energy Technology Data Exchange (ETDEWEB)

    Zou, Xuejun [Department of Environmental Science and Technology, Dalian Nationalities University, Dalian, 116600 (China); Dong, Yuying, E-mail: dongy@dlnu.edu.cn [Department of Environmental Science and Technology, Dalian Nationalities University, Dalian, 116600 (China); Zhang, Xiaodong, E-mail: fatzhxd@126.com [Environment and Low-Carbon Research Center, School of Environment and Architecture, University of Shanghai for Science and Technology, Shanghai, 200093 (China); Cui, Yubo; Ou, Xiaoxia [Department of Environmental Science and Technology, Dalian Nationalities University, Dalian, 116600 (China); Qi, Xiaohui [College of Life Science, Dalian Nationalities University, Dalian, 116600 (China)

    2017-01-01

    Highlights: • Like-flowers BiPO{sub 4}/BiOBr was fabricated by mixing in solvent method. • o-Dichlorobenzene removal efficiency was 53.6% using BiPO{sub 4}/BiOBr. • The p–n junction improved o-dichlorobenzene degradation activity. - Abstract: In this paper, in order to enhance photo-induced electron-hole pairs separation of BiOBr, flowers-like BiPO{sub 4}/BiOBr p-n heterojunction composites was fabricated by a mixing in solvent method. The as-prepared samples were characterized by X-ray powder diffraction (XRD), scanning electron microscopy (SEM), high resolution transmission electron microscopy (HRTEM), UV–vis absorption spectroscopy (DRS), X-ray photoelectron spectroscopy (XPS), and N{sub 2} adsorption-desorption. Meanwhile, their photocatalytic properties were investigated by the degradation of gaseous o-dichlorobenzene under visible light irradiation. Due to its strong adsorption capacity and the formation of p-n heterojunction, compared with BiPO{sub 4} and BiOBr, the BiPO{sub 4}/BiOBr composites showed higher photocatalytic activity in the degradation of gaseous o-DCB under visible light. Among them, 2% BiPO{sub 4}/BiOBr showed the maximum value of the activity, whose degradation rate was about 2.6 times as great as the pure BiOBr. Furthermore, the OH· was confirmed the main active species during the photocatalytic process by the trapping experiments. The outstanding performance indicated that the photocatalysts could be applied to air purification for chlorinated volatile organic compound.

  16. Long-term safety and efficacy of a pasteurized nanofiltrated prothrombin complex concentrate (Beriplex P/N): a pharmacovigilance study.

    Science.gov (United States)

    Hanke, A A; Joch, C; Görlinger, K

    2013-05-01

    The rapid reversal of the effects of vitamin K antagonists is often required in cases of emergency surgery and life-threatening bleeding, or during bleeding associated with high morbidity and mortality such as intracranial haemorrhage. Increasingly, four-factor prothrombin complex concentrates (PCCs) containing high and well-balanced concentrations of vitamin K-dependent coagulation factors are recommended for emergency oral anticoagulation reversal. Both the safety and efficacy of such products are currently in focus, and their administration is now expanding into the critical care setting for the treatment of life-threatening bleeding and coagulopathy resulting either perioperatively or in cases of acute trauma. After 15 yr of clinical use, findings of a pharmacovigilance report (February 1996-March 2012) relating to the four-factor PCC Beriplex P/N (CSL Behring, Marburg, Germany) were analysed and are presented here. Furthermore, a review of the literature with regard to the efficacy and safety of four-factor PCCs was performed. Since receiving marketing authorization (February 21, 1996), ~647 250 standard applications of Beriplex P/N have taken place. During this time, 21 thromboembolic events judged to be possibly related to Beriplex P/N administration have been reported, while no incidences of viral transmission or heparin-induced thrombocytopenia were documented. The low risk of thromboembolic events reported during the observation period (one in ~31 000) is in line with the incidence observed with other four-factor PCCs. In general, four-factor PCCs have proven to be well tolerated and highly effective in the rapid reversal of vitamin K antagonists.

  17. Evaluation of pN factors in patients with primary lung cancer by using perfusion, inhalation and ventilation studies

    International Nuclear Information System (INIS)

    Tamai, Toyosato; Tanabe, Masatada; Satoh, Katashi

    1987-01-01

    The interpretation of scintigraphic patterns and the role of pathophysiological mechanisms in patients with primary lung cancer were investigated. To determine the relative roles of perfusion, inhalation and ventilation scintigraphy, the relationship between the count ratio of the affected side to the healthy side and the post-surgical histological lymph nodes factors were observed in this study. These scintigraphic count ratio's in patients with primary lung cancer did not reflect the pN factors except in the perfusion study in patients with hilar primary lung cancer. (author)

  18. Investigation of the reaction 16O(p,n)16F at Esub(p)=135 MeV

    International Nuclear Information System (INIS)

    Gareev, F.A.; Ershov, S.N.

    1984-01-01

    The 16 O(p,n) 16 F reaction at 135 MeV has been analyzed the framework of the distorted-wave impulse-approximation (DWIA). Both direct and exchange mechanisms of nucleon knock-out are taken into account. Including the n-particle n-hole (n=0, 1, 2) correlations in the wave functions of A=16 nuclei improves the description of experimental data: diminishes the absolute value of the cross sections about twice as compared with the calculations using the simple particle-hole structure models

  19. Hybrid van der Waals p-n Heterojunctions based on SnO and 2D MoS2

    KAUST Repository

    Wang, Zhenwei

    2016-08-30

    A p-type oxide/2D hybrid van der Waals p-n heterojunction is demonstrated for the first time between SnO (tin monoxide) (the p-type oxide) and 2D MoS2 (molybdenum disulfide), showing an ideality factor of 2 and rectification ratio up to 10(4) . The reported heterojunction is gate-tunable with typical anti-ambipolar transfer characteristics. Surface potential mapping is performed and a current model for such a heterojunction is proposed.

  20. Experimental study of exclusive $^2$H$(e,e^\\prime p)n$ reaction mechanisms at high $Q^2$

    Energy Technology Data Exchange (ETDEWEB)

    Kim Egiyan; Gegham Asryan; Nerses Gevorgyan; Keith Griffioen; Jean Laget; Sebastian Kuhn; Gary Adams; Moscov Amaryan; Pawel Ambrozewicz; Marco Anghinolfi; Gerard Audit; Harutyun AVAKIAN; Harutyun Avakian; Hovhannes Baghdasaryan; Nathan Baillie; Jacques Ball; Nathan Baltzell; Steve Barrow; Vitaly Baturin; Marco Battaglieri; Ivan Bedlinski; Ivan Bedlinskiy; Mehmet Bektasoglu; Matthew Bellis; Nawal Benmouna; Barry Berman; Angela Biselli; Lukasz Blaszczyk; Sylvain Bouchigny; Sergey Boyarinov; Robert Bradford; Derek Branford; William Briscoe; William Brooks; Stephen Bueltmann; Volker Burkert; Cornel Butuceanu; John Calarco; Sharon Careccia; Daniel Carman; Antoine Cazes; Shifeng Chen; Philip Cole; Patrick Collins; Philip Coltharp; Dieter Cords; Pietro Corvisiero; Donald Crabb; Volker Crede; John Cummings; Natalya Dashyan; Rita De Masi; Raffaella De Vita; Enzo De Sanctis; Pavel Degtiarenko; Haluk Denizli; Lawrence Dennis; Alexandre Deur; Kahanawita Dharmawardane; Richard Dickson; Chaden Djalali; Gail Dodge; Joseph Donnelly; David Doughty; Michael Dugger; Steven Dytman; Oleksandr Dzyubak; Hovanes Egiyan; Lamiaa Elfassi; Latifa Elouadrhiri; Paul Eugenio; Renee Fatemi; Gleb Fedotov; Gerald Feldman; Robert Feuerbach; Robert Fersch; Michel Garcon; Gagik Gavalian; Gerard Gilfoyle; Kevin Giovanetti; Francois-Xavier Girod; John Goetz; Atilla Gonenc; Christopher Gordon; Ralf Gothe; Michel Guidal; Matthieu Guillo; Hayko Guler; Lei Guo; Vardan Gyurjyan; Cynthia Hadjidakis; Kawtar Hafidi; Hayk Hakobyan; Rafael Hakobyan; Charles Hanretty; John Hardie; F. Hersman; Kenneth Hicks; Ishaq Hleiqawi; Maurik Holtrop; Charles Hyde-Wright; Yordanka Ilieva; David Ireland; Boris Ishkhanov; Eugeny Isupov; Mark Ito; David Jenkins; Hyon-Suk Jo; Kyungseon Joo; Henry Juengst; Narbe Kalantarians; James Kellie; Mahbubul Khandaker; Wooyoung Kim; Andreas Klein; Franz Klein; Alexei Klimenko; Mikhail Kossov; Zebulun Krahn; Laird Kramer; V. Kubarovsky; Joachim Kuhn; Sergey Kuleshov; Jeff Lachniet; Jorn Langheinrich; David Lawrence; Ji Li; Kenneth Livingston; Haiyun Lu; Marion MacCormick; Claude Marchand; Nikolai Markov; Paul Mattione; Simeon McAleer; Bryan McKinnon; John McNabb; Bernhard Mecking; Surik Mehrabyan; Joseph Melone; Mac Mestayer; Curtis Meyer; Tsutomu Mibe; Konstantin Mikhaylov; Ralph Minehart; Marco Mirazita; Rory Miskimen; Viktor Mokeev; Kei Moriya; Steven Morrow; Maryam Moteabbed; James Mueller; Edwin Munevar Espitia; Gordon Mutchler; Pawel Nadel-Turonski; Rakhsha Nasseripour; Silvia Niccolai; Gabriel Niculescu; Maria-Ioana Niculescu; Bogdan Niczyporuk; Megh Niroula; Rustam Niyazov; Mina Nozar; Grant O' Rielly; Mikhail Osipenko; Alexander Ostrovidov; Kijun Park; Evgueni Pasyuk; Craig Paterson; Sergio Pereira; Joshua Pierce; Nikolay Pivnyuk; Dinko Pocanic; Oleg Pogorelko; Sergey Pozdnyakov; Barry Preedom; John Price; Yelena Prok; Dan Protopopescu; Brian Raue; Gregory Riccardi; Giovanni Ricco; Marco Ripani; Barry Ritchie; Federico Ronchetti; Guenther Rosner; Patrizia Rossi; Franck Sabatie; Julian Salamanca; Carlos Salgado; Joseph Santoro; Vladimir Sapunenko; Reinhard Schumacher; Vladimir Serov; Youri Sharabian; Nikolay Shvedunov; Alexander Skabelin; Elton Smith; Lee Smith; Daniel Sober; Daria Sokhan; Aleksey Stavinskiy; Samuel Stepanyan; Stepan Stepanyan; Burnham Stokes; Paul Stoler; Steffen Strauch; Mauro Taiuti; David Tedeschi; Ulrike Thoma; Avtandil Tkabladze; Svyatoslav Tkachenko; Luminita Todor; Clarisse Tur; Maurizio Ungaro; Michael Vineyard; Alexander Vlassov; Daniel Watts; Lawrence Weinstein; Dennis Weygand; M. Williams; Elliott Wolin; Michael Wood; Amrit Yegneswaran; Lorenzo Zana; Jixie Zhang; Bo Zhao; Zhiwen Zhao

    2007-06-01

    The reaction {sup 2}H(e,e{prime} p)n has been studied with full kinematic coverage for photon virtuality 1.75 < 5.5 {approx} GeV{sup 2}. Comparisons of experimental data with theory indicate that for very low values of neutron recoil momentum (p{sub n} < 100 MeV/c) the neutron is primarily a spectator and the reaction can be described by the plane-wave impulse approximation. For 100 < 750 MeV/c proton-neutron rescattering dominates the cross section, while {Delta} production followed by the N{Delta} {yields} NN transition is the primary contribution at higher momenta.

  1. Angular measurement of the energy distribution of neutrons from the thick target 7Li(p,n)7Be source

    International Nuclear Information System (INIS)

    Rose, A.

    1981-11-01

    The energy spectrum of neutrons emitted from a thick lithium target bombarded by protons has been measured as a function of neutron angle of emission. The measurements were done at proton energies up to 2.8 MeV and at 30 deg. intervals in the range 0 to 120 deg. using proportional detectors with gas fillings of hydrogen and methane. A review is given of papers published on the 7 Li(p,n) 7 Be reactions at 0 deg.; where applicable, comparisons are made with the present results

  2. N.G. Basov and early works on semiconductor lasers at P.N. Lebedev Physics Institute

    International Nuclear Information System (INIS)

    Eliseev, P G

    2012-01-01

    A survey is presented of works on creation and investigation of semiconductor lasers during 1957 – 1977 at the P.N. Lebedev Physics Institute. Many of these works were initiated by N.G. Basov, starting from pre-laser time, when N.G. Basov and his coworkers formulated principal conditions of creation of lasers on interband transitions in semiconductors. Main directions of further works were diode lasers based on various materials and structures, their characteristics of output power, high-speed operation and reliability. (special issue devoted to the 90th anniversary of n.g. basov)

  3. Laparoscopic Puestow: lateral pancreaticojejunostomy.

    Science.gov (United States)

    Biteman, Benjamin R; Harr, Jeffrey N; Brody, Fred

    2016-12-01

    Chronic pancreatitis is a painful inflammatory disease that leads to progressive and irreversible destruction of pancreatic parenchyma [1]. A lateral pancreaticojejunostomy, also known as the Puestow procedure, is performed for symptomatic chronic pancreatitis associated with a dilated pancreatic duct secondary to calcifications or strictures [4]. An open approach is used traditionally due to the complexity of the case, and there have only been a handful of laparoscopic case reports [2]. This video depicts a laparoscopic lateral pancreaticojejunostomy for chronic pancreatitis. A 45-year-old gentleman with a 20-year history of chronic alcohol abuse presented with diffuse abdominal pain. His pain was worse postprandially and associated with loose stools. A computed tomography scan revealed multiple calcified deposits within the body and tail of the pancreas, and a dilated pancreatic duct measuring 1.4 cm with a proximal obstructing calcified stone. A 5-port foregut technique was used, and a 15-cm pancreatic ductotomy was performed with an ultrasonic scalpel. Calcified stones were cleared from the duct, and a roux-en-y pancreaticojejunostomy was performed using a hand-sewn technique. The patient had a relatively uncomplicated hospital course with return of bowel function on postoperative day 4. His patient-controlled analgesic device was discontinued on post operative day 3. He was ambulating, tolerating a regular diet and discharged home on postoperative day 5. At 12- and 26-month follow-up, he remains off narcotics, but still requires 1-2 tabs of pancreatic enzyme replacement per meal. Most importantly, he has not had any alcohol for over 2 years. The two primary goals in treating chronic pancreatitis include long-term pain relief and improvements in quality of life [3]. For patients with chronic pancreatitis and a dilated pancreatic duct, a laparoscopic lateral pancreaticojejunostomy may be an effective approach to decrease pain and improve quality of life.

  4. Modified puestow lateral pancreaticojejunostomy.

    Science.gov (United States)

    Ceppa, Eugene P; Pappas, Theodore N

    2009-05-01

    There are various surgical options for the treatment of pain associated with chronic pancreatitis. The modified Puestow lateral pancreaticojejunostomy has been proven to be effective in ameliorating symptoms and expediting return to normal lifestyle while maintaining a low rate of morbidity and mortality. However, the debate regarding which surgical treatment provides the best outcomes is controversial. The aims of this manuscript are to identify the patient population for which the Puestow benefits the most and discuss the pertinent technical aspects of the surgical procedure.

  5. The anatomical locus of T-junction processing.

    Science.gov (United States)

    Schirillo, James A

    2009-07-01

    Inhomogeneous surrounds can produce either asymmetrical or symmetrical increment/decrement induction by orienting T-junctions to selectively group a test patch with surrounding regions [Melfi, T., & Schirillo, J. (2000). T-junctions in inhomogeneous surrounds. Vision Research, 40, 3735-3741]. The current experiments aimed to determine where T-junctions are processed by presenting each eye with a different image so that T-junctions exist only in the fused percept. Only minor differences were found between retinal and cortical versus cortical-only conditions, indicating that T-junctions are processed cortically.

  6. Planar Josephson tunnel junctions in a transverse magnetic field

    DEFF Research Database (Denmark)

    Monacoa, R.; Aarøe, Morten; Mygind, Jesper

    2007-01-01

    demagnetization effects imposed by the tunnel barrier and electrodes geometry are important. Measurements of the junction critical current versus magnetic field in planar Nb-based high-quality junctions with different geometry, size, and critical current density show that it is advantageous to use a transverse......Traditionally, since the discovery of the Josephson effect in 1962, the magnetic diffraction pattern of planar Josephson tunnel junctions has been recorded with the field applied in the plane of the junction. Here we discuss the static junction properties in a transverse magnetic field where...

  7. In vitro early changes in intercellular junctions by treatment with a chemical carcinogen.

    Science.gov (United States)

    Tachikawa, T; Kohno, Y; Matsui, Y; Yoshiki, S

    1986-06-01

    To examine early intercellular junction changes caused by treatment with 9,10-dimethyl-1,2-benzanthracene (DMBA), rat lingual epithelium was cultivated in isolation and observed by electrophysiological, freeze-fracture and whole-mount electron microscopy. Electrophysiological measurements showed a transient decrease in membrane potential of -10.2 mV 6 h after the treatment. It returned to almost the same level as that of the control group 1 day later. Six hours after treatment, input resistance decreased rapidly to 5.3 M omega but increased to 18.0 M omega 12 h after treatment. Transient reduction of input resistance and membrane potential occurred prior to the decrease in the coupling ratio 6 h after treatment with DMBA. In freeze-fracture replicas, the number of gap junctions decreased by approximately 45% of the control value 6 h after treatment with DMBA. At 12 h and thereafter, the number and area of gap junctions subsequently decreased by 60-80% of the control value. Alterations in the number and area of desmosomes were similar to those of the gap junctions. The formation of epithelial cytoskeletons, partially devoid of the 2-4 and 5-8 nm filaments was also observed. A decrease in the density of filament networks beneath the plasma membranes was especially apparent. Treatment with a carcinogen brought about morphological cellular changes as early as 6 h after treatment, and such early changes might trigger metabolic cellular abnormalities. Affected cells appear to move away from normal cells in a process of repeated destruction and revision of intercellular junctions, and cytoskeletons.

  8. Preoperative multidetector CT manifestations of perigastric lymph nodes in patients with early gastric cancer and pN0

    Energy Technology Data Exchange (ETDEWEB)

    Kang, Jung Hyun; Yu, Jeong Sik; Chung, Jae Joon; Lim, Joo Hee; Cho, Eun Suk; Kim, Ki Whang [Dept. of Radiology, Yonsei University College of Medicine, Gangnam Severance Hospital, Seoul (Korea, Republic of)

    2013-11-15

    To find the determinant of lymph node (LN) manifestations on preoperative multidetector CT (MDCT) in early gastric cancer (EGC) patients with pN0. One hundred and eighty-six consecutive patients with pT1pN0, the largest perigastric LN on preoperative MDCT, were categorized into two groups according to 8 different parameters [short (SD) and long diameter (LD) 4/6/8 mm, average attenuation 100 Hounsfield unit, short-to-long diameter-ratio (SLR) 0.7], and correlated with the size, gross type, depth of invasion and microscopic type of their primary lesions by the chi-square test and multiple logistic regression analysis. When the primary lesion was larger than 3 cm, the LNs were larger in 4 parameters (SD or LD, 4/6 mm; p < 0.05); gross type IIb patients showed smaller LNs in 5 parameters (SD 4/6 mm, LD 4/6/8 mm; p < 0.05); and patients with microscopically-undifferentiated lesions showed larger LNs in SD 4 mm or LD 8 mm by the chi-square test and multiple logistic regression analysis. The depth of invasion showed no significant difference in LN size. No factors revealed significant difference in LN attenuation or SLR. Benign regional LN enlargement is more frequent in EGC patients with larger size primary lesions or lesion with poor microscopic differentiation. However, this condition is less frequent in gross type IIb patients.

  9. Charge exchange (p,n) reactions to the isobaric analog states of high Z nuclei: 73< or =Z< or =92

    International Nuclear Information System (INIS)

    Hansen, L.F.; Grimes, S.M.; Poppe, C.H.; Wong, C.

    1983-01-01

    Differential cross sections have been measured for the (p,n) reaction to the isobaric analog states of 181 Ta, 197 Au, 209 Bi, 232 Th, and 238 U at an incident energy of 27 MeV. Because of the importance of collective effects in this mass region, coupled-channel calculations have been carried out in the analysis of the data. Optical potentials obtained from the Lane model for the charge exchange reaction have been used in the simultaneous analysis of coupled proton and neutron channels. The sensitivity of the calculations to the different couplings between the levels and to the magnitude of the isovector potentials, V 1 and W 1 , is discussed. The good agreement obtained between the measured and calculated (p,n) angular distributions to the analog state confirms the validity of the Lane formalism for high-Z nuclei (Z> or =50). Elastic neutron differential cross sections inferred from the coupled-channel analysis are compared with measurements available in the literature in the energy range 7--8 MeV. The results of these calculations agree with the measured values as well as the results of calculations made using global neutron optical potential parameters optimized to fit neutron data

  10. Forward $\\pi^{+-}$ production in p-$O_2$ and p-$N_2$ interactions at 12 GeV/c

    CERN Document Server

    Catanesi, M.G.; Edgecock, R.; Ellis, M.; Gossling, C.; Bunyatov, S.; Krasnoperov, A.; Popov, B.; Tereschenko, V.; Di Capua, E.; Vidal-Sitjes, G.; Artamonov, A.; Giani, S.; Gilardoni, S.; Gorbunov, P.; Grant, A.; Grossheim, A.; Ivanchenko, A.; Ivanchenko, V.; Kayis-Topaksu, A.; Panman, J.; Papadopoulos, I.; Tcherniaev, E.; Tsukerman, I.; Wiebusch, C.; Zucchelli, P.; Blondel, A.; Borghi, S.; Morone, M.C.; Prior, G.; Schroeter, R.; Meurer, C.; Gastaldi, U.; Mills, G.B.; Graulich, J.S.; Gregoire, G.; Bonesini, M.; Ferri, F.; Kirsanov, M.; Bagulya, A.; Grichine, V.; Polukhina, N.; Palladino, V.; Coney, L.; Schmitz, D.; Barr, G.; Bobisut, F.; Gibin, D.; Guglielmi, A.; Mezzetto, M.; Dumarchez, J.; Dore, U.; Orestano, D.; Pastore, F.; Tonazzo, A.; Tortora, L.; Booth, C.; Howlett, L.; Bogomilov, M.; Kolev, D.; Tsenov, R.; Piperov, Stefan; Temnikov, P.; Apollonio, M.; Chimenti, P.; Giannini, G.; Burguet-Castell, J.; Cervera-Villanueva, A.; Gomez-Cadenas, J.J.; Martin-Albo, J.; Sorel, M.

    2008-01-01

    Measurements of double-differential charged pion production cross-sections in interactions of 12 GeV/c protons on O_2 and N_2 thin targets are presented in the kinematic range 0.5 GeV/c < p_{\\pi} < 8 GeV/c and 50 mrad < \\theta_{\\pi} < 250 mrad (in the laboratory frame) and are compared with p--C results. For p--N_2 (p--O_2) interactions the analysis is performed using 38576 (7522) reconstructed secondary pions. The analysis uses the beam instrumentation and the forward spectrometer of the HARP experiment at CERN PS. The measured cross-sections have a direct impact on the precise calculation of atmospheric neutrino fluxes and on the improved reliability of extensive air shower simulations by reducing the uncertainties of hadronic interaction models in the low energy range. In particular, the present results allow the common hypothesis that p--C data can be used to predict the p--N_2 and p--O_2 pion production cross-sections to be tested.

  11. Spontaneous lateral temporal encephalocele.

    Science.gov (United States)

    Tuncbilek, Gokhan; Calis, Mert; Akalan, Nejat

    2013-01-01

    A spontaneous encephalocele is one that develops either because of embryological maldevelopment or from a poorly understood postnatal process that permits brain herniation to occur. We here report a rare case of lateral temporal encephalocele extending to the infratemporal fossa under the zygomatic arch. At birth, the infant was noted to have a large cystic mass in the right side of the face. After being operated on initially in another center in the newborn period, the patient was referred to our clinic with a diagnosis of temporal encephalocele. He was 6 months old at the time of admission. Computerized tomography scan and magnetic resonance imaging studies revealed a 8 × 9 cm fluid-filled, multiloculated cystic mass at the right infratemporal fossa. No intracranial pathology or connection is seen. The patient was operated on to reduce the distortion effect of the growing mass. The histopathological examination of the sac revealed well-differentiated mature glial tissue stained with glial fibrillary acid protein. This rare clinical presentation of encephaloceles should be taken into consideration during the evaluation of the lateral facial masses in the infancy period, and possible intracranial connection should be ruled out before surgery to avoid complications.

  12. p-n Junction Dynamics Induced in a Graphene Channel by Ferroelectric-Domain Motion in the Substrate

    Energy Technology Data Exchange (ETDEWEB)

    Kurchak, Anatolii I. [National Academy of Sciences of Ukraine (NASU), Kiev (Ukraine); Eliseev, Eugene A. [National Academy of Sciences of Ukraine (NASU), Kiev (Ukraine); Kalinin, Sergei V. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Strikha, Maksym V. [National Academy of Sciences of Ukraine (NASU), Kiev (Ukraine); Taras Shevchenko Kyiv National Univ., Kyiv (Ukraine); Morozovska, Anna N. [National Academy of Sciences of Ukraine (NASU), Kiev (Ukraine)

    2017-08-30

    The p - n junction dynamics induced in a graphene channel by stripe-domain nucleation, motion, and reversal in a ferroelectric substrate is explored using a self-consistent approach based on Landau-Ginzburg-Devonshire phenomenology combined with classical electrostatics. Relatively low gate voltages are required to induce the hysteresis of ferroelectric polarization and graphene charge in response to the periodic gate voltage. Pronounced nonlinear hysteresis of graphene conductance with a wide memory window corresponds to high amplitudes of gate voltage. Also, we reveal the extrinsic size effect in the dependence of the graphene-channel conductivity on its length. We predict that the top-gate–dielectric-layer–graphene-channel–ferroelectric-substrate nanostructure considered here can be a promising candidate for the fabrication of the next generation of modulators and rectifiers based on the graphene p - n junctions.

  13. Phase diagrams of particles with dissimilar patches: X-junctions and Y-junctions

    International Nuclear Information System (INIS)

    Tavares, J M; Teixeira, P I C

    2012-01-01

    We use Wertheim’s first-order perturbation theory to investigate the phase behaviour and the structure of coexisting fluid phases for a model of patchy particles with dissimilar patches (two patches of type A and f B patches of type B). A patch of type α = {A,B} can bond to a patch of type β = {A,B} in a volume v αβ , thereby decreasing the internal energy by ε αβ . We analyse the range of model parameters where AB bonds, or Y-junctions, are energetically disfavoured (ε AB AA /2) but entropically favoured (v AB ≫ v αα ), and BB bonds, or X-junctions, are energetically favoured (ε BB > 0). We show that, for low values of ε BB /ε AA , the phase diagram has three different regions: (i) close to the critical temperature a low-density liquid composed of long chains and rich in Y-junctions coexists with a vapour of chains; (ii) at intermediate temperatures there is coexistence between a vapour of short chains and a liquid of very long chains with X- and Y-junctions; (iii) at low temperatures an ideal gas coexists with a high-density liquid with all possible AA and BB bonds formed. It is also shown that in region (i) the liquid binodal is reentrant (its density decreases with decreasing temperature) for the lower values of ε BB /ε AA . The existence of these three regions is a consequence of the competition between the formation of X- and Y-junctions: X-junctions are energetically favoured and thus dominate at low temperatures, whereas Y-junctions are entropically favoured and dominate at higher temperatures. (paper)

  14. Single-electron tunnel junction array

    International Nuclear Information System (INIS)

    Likharev, K.K.; Bakhvalov, N.S.; Kazacha, G.S.; Serdyukova, S.I.

    1989-01-01

    The authors have carried out an analysis of statics and dynamics of uniform one-dimensional arrays of ultrasmall tunnel junctions. The correlated single-electron tunneling in the junctions of the array results in its behavior qualitatively similar to that of the Josephson transmission line. In particular, external electric fields applied to the array edges can inject single-electron-charged solitons into the array interior. Shape of such soliton and character of its interactions with other solitons and the array edges are very similar to those of the Josephson vortices (sine-Gordon solitons) in the Josephson transmission line. Under certain conditions, a coherent motion of the soliton train along the array is possible, resulting in generation of narrowband SET oscillations with frequency f/sub s/ = /e where is the dc current flowing along the array

  15. Charge Transport Phenomena in Peptide Molecular Junctions

    International Nuclear Information System (INIS)

    Luchini, A.; Petricoin, E.F.; Geho, D.H.; Liotta, L.A.; Long, D.P.; Vaisman, I.I.

    2008-01-01

    Inelastic electron tunneling spectroscopy (IETS) is a valuable in situ spectroscopic analysis technique that provides a direct portrait of the electron transport properties of a molecular species. In the past, IETS has been applied to small molecules. Using self-assembled nano electronic junctions, IETS was performed for the first time on a large polypeptide protein peptide in the phosphorylated and native form, yielding interpretable spectra. A reproducible 10-fold shift of the I/V characteristics of the peptide was observed upon phosphorylation. Phosphorylation can be utilized as a site-specific modification to alter peptide structure and thereby influence electron transport in peptide molecular junctions. It is envisioned that kinases and phosphatases may be used to create tunable systems for molecular electronics applications, such as biosensors and memory devices.

  16. Electron and Phonon Transport in Molecular Junctions

    DEFF Research Database (Denmark)

    Li, Qian

    Molecular electronics provide the possibility to investigate electron and phonon transport at the smallest imaginable scale, where quantum effects can be investigated and exploited directly in the design. In this thesis, we study both electron transport and phonon transport in molecular junctions....... The system we are interested in here are π-stacked molecules connected with two semi-infinite leads. π-stacked aromatic rings, connected via π-π electronic coupling, provides a rather soft mechanical bridge while maintaining high electronic conductivity. We investigate electron transport...... transmission at the Fermi energy. We propose and analyze a way of using π   stacking to design molecular junctions to control heat transport. We develop a simple model system to identify optimal parameter regimes and then use density functional theory (DFT) to extract model parameters for a number of specific...

  17. Non-Lagrangian theories from brane junctions

    Energy Technology Data Exchange (ETDEWEB)

    Bao, Ling [Chalmers Univ. of Technology, Goeteborg (Sweden); Mitev, Vladimir [Humboldt Univ., Berlin (Germany). Inst. fuer Mathematik und Inst. fuer Physik; Pomoni, Elli [Deutsches Elektronen-Synchrotron DESY, Hamburg (Germany). Theory Group; Taki, Masato [RIKEN Nishina Center, Saitama (Japan). Mathematical Physics Lab.; Yagi, Futoshi [International School of Advanced Studies (SISSA), Trieste (Italy); INFN, Trieste (Italy); Korea Institute for Advanced Study (KIAS), Seoul (Korea, Republic of)

    2013-10-15

    In this article we use 5-brane junctions to study the 5D T{sub N} SCFTs corresponding to the 5D N=1 uplift of the 4D N=2 strongly coupled gauge theories, which are obtained by compactifying N M5 branes on a sphere with three full punctures. Even though these theories have no Lagrangian description, by using the 5-brane junctions proposed by Benini, Benvenuti and Tachikawa, we are able to derive their Seiberg-Witten curves and Nekrasov partition functions. We cross-check our results with the 5D superconformal index proposed by Kim, Kim and Lee. Through the AGTW correspondence, we discuss the relations between 5D superconformal indices and n-point functions of the q-deformed W{sub N} Toda theories.

  18. Non-Lagrangian theories from brane junctions

    International Nuclear Information System (INIS)

    Bao, Ling; Mitev, Vladimir

    2013-10-01

    In this article we use 5-brane junctions to study the 5D T N SCFTs corresponding to the 5D N=1 uplift of the 4D N=2 strongly coupled gauge theories, which are obtained by compactifying N M5 branes on a sphere with three full punctures. Even though these theories have no Lagrangian description, by using the 5-brane junctions proposed by Benini, Benvenuti and Tachikawa, we are able to derive their Seiberg-Witten curves and Nekrasov partition functions. We cross-check our results with the 5D superconformal index proposed by Kim, Kim and Lee. Through the AGTW correspondence, we discuss the relations between 5D superconformal indices and n-point functions of the q-deformed W N Toda theories.

  19. Fractional flux quanta in Josephson junctions

    Energy Technology Data Exchange (ETDEWEB)

    Goldobin, E.; Buckenmaier, K.; Gaber, T.; Kemmler, M.; Pfeiffer, J.; Koelle, D.; Kleiner, R. [Physikalisches Inst. - Experimentalphysik II, Univ. Tuebingen (Germany); Weides, M.; Kohlstedt, H. [Center of Nanoelectronic Systems for Information Technology (CNI), Research Centre Juelich (Germany); Siegel, M. [Inst. fuer Mikro- und Nanoelektronische Systeme, Univ. Karlsruhe (Germany)

    2007-07-01

    Fractional Josephson vortices may appear in the so-called 0-{kappa} Josephson junctions ({kappa} is an arbitrary number) and carry magnetic flux {phi}, which is a fraction of the magnetic flux quantum {phi}{sub 0}{approx}2.07 x 10{sup -15} Wb. Their properties are very different from the usual integer fluxons: they are pinned, and often represent the ground state of the system with spontaneous circulating supercurrent. They behave as well controlled macroscopic spins and can be used to construct bits, qubits, tunable photonic crystals and to study the (quantum) physics of spin systems. In this talk we discuss recent advances in 0-{pi} junction technology and present recent experimental results: evidence of the spontaneous flux in the ground state, spectroscopy of the fractional vortex eigenfrequencies and observation of dynamics effects related to the flipping of the fractional vortices. (orig.)

  20. Relaxation oscillation logic in Josephson junction circuits

    International Nuclear Information System (INIS)

    Fulton, T.A.

    1981-01-01

    A dc powered, self-resetting Josephson junction logic circuit relying on relaxation oscillations is described. A pair of Josephson junction gates are connected in series, a first shunt is connected in parallel with one of the gates, and a second shunt is connected in parallel with the series combination of gates. The resistance of the shunts and the dc bias current bias the gates so that they are capable of undergoing relaxation oscillations. The first shunt forms an output line whereas the second shunt forms a control loop. The bias current is applied to the gates so that, in the quiescent state, the gate in parallel with the second shunt is at V O, and the other gate is undergoing relaxation oscillations. By controlling the state of the first gate with the current in the output loop of another identical circuit, the invert function is performed