WorldWideScience

Sample records for lateral p-n junction

  1. Atomically thin lateral p-n junction photodetector with large effective detection area

    Science.gov (United States)

    Xu, Zai-Quan; Zhang, Yupeng; Wang, Ziyu; Shen, Yuting; Huang, Wenchao; Xia, Xue; Yu, Wenzhi; Xue, Yunzhou; Sun, Litao; Zheng, Changxi; Lu, Yuerui; Liao, Lei; Bao, Qiaoliang

    2016-12-01

    The widely used photodetector design based on atomically thin transition metal dichalcogenides (TMDs) has a lateral metal-TMD-metal junction with a fairly small, line shape photoresponsive active area at the TMD-electrode interface. Here, we report a highly efficient photodetector with extremely large photoresponsive active area based on a lateral junction of monolayer-bilayer WSe2. Impressively, the separation of the electron-hole pairs (excitons) extends onto the whole 1L-2L WSe2 junction surface. The responsivity of the WSe2 junction photodetector is over 3200 times higher than that of a monolayer WSe2 device and leads to a highest external quantum efficiency of 256% due to the efficient carrier extraction. Unlike the TMD p-n junctions modulated by dual gates or localized doping, which require complex fabrication procedures, our study establishes a simple, controllable, and scalable method to improve the photodetection performance by maximizing the active area for current generation.

  2. Analytical theory of the space-charge region of lateral p-n junctions in nanofilms

    Energy Technology Data Exchange (ETDEWEB)

    Gurugubelli, Vijaya Kumar, E-mail: vkgurugubelli@gmail.com; Karmalkar, Shreepad [Department of Electrical Engineering, Indian Institute of Technology Madras, Chennai 600036 (India)

    2015-07-21

    There is growing interest in fabricating conventional semiconductor devices in a nanofilm which could be a 3D material with one reduced dimension (e.g., silicon-on-insulator (SOI) film), or single/multiple layers of a 2D material (e.g., MoS{sub 2}), or a two dimensional electron gas/two dimensional hole gas (2DEG/2DHG) layer. Lateral p-n junctions are essential parts of these devices. The space-charge region electrostatics in these nanofilm junctions is strongly affected by the surrounding field, unlike in bulk junctions. Current device physics of nanofilms lacks a simple analytical theory of this 2D electrostatics of lateral p-n junctions. We present such a theory taking into account the film's thickness, permittivity, doping, interface charge, and possibly different ambient permittivities on film's either side. In analogy to the textbook theory of the 1D electrostatics of bulk p-n junctions, our theory yields simple formulas for the depletion width, the extent of space-charge tails beyond this width, and the screening length associated with the space-charge layer in nanofilm junctions; these formulas agree with numerical simulations and measurements. Our theory introduces an electrostatic thickness index to classify nanofilms into sheets, bulk and intermediate sized.

  3. Temporal characteristics of surface-acoustic-wave-driven luminescence from a lateral p-n junction

    Science.gov (United States)

    Gell, J. R.; Ward, M. B.; Shields, A. J.; Atkinson, P.; Bremner, S. P.; Anderson, D.; Kataoka, M.; Barnes, C. H. W.; Jones, G. A. C.; Ritchie, D. A.

    2007-07-01

    Short radio frequency pulses were used to study the surface-acoustic-wave-driven light emission from a molecular beam epitaxy regrown GaAs /AlGaAs lateral p-n junction. The luminescence provides a fast probe of the signals arriving at the junction allowing the authors to temporally separate the effect of the surface-acoustic-wave from pickup of the free space electromagnetic wave. Oscillations in the light intensity are resolved at the resonant frequency of the transducer, suggesting that the surface-acoustic-wave is transporting electrons across the junction in packets.

  4. Surface-acoustic-wave-driven luminescence from a lateral p-n junction

    Science.gov (United States)

    Gell, J. R.; Atkinson, P.; Bremner, S. P.; Sfigakis, F.; Kataoka, M.; Anderson, D.; Jones, G. A. C.; Barnes, C. H. W.; Ritchie, D. A.; Ward, M. B.; Norman, C. E.; Shields, A. J.

    2006-12-01

    The authors report surface-acoustic-wave-driven luminescence from a lateral p-n junction formed by molecular beam epitaxy regrowth of a modulation doped GaAs /AlGaAs quantum well on a patterned GaAs substrate. Surface-acoustic-wave-driven transport is demonstrated by peaks in the electrical current and light emission from the GaAs quantum well at the resonant frequency of the transducer. This type of junction offers high carrier mobility and scalability. The demonstration of surface-acoustic-wave luminescence is a significant step towards single-photon applications in quantum computation and quantum cryptography.

  5. Photocurrent generation in lateral graphene p-n junction created by electron-beam irradiation

    KAUST Repository

    Yu, Xuechao

    2015-07-08

    Graphene has been considered as an attractive material for optoelectronic applications such as photodetectors owing to its extraordinary properties, e.g. broadband absorption and ultrahigh mobility. However, challenges still remain in fundamental and practical aspects of the conventional graphene photodetectors which normally rely on the photoconductive mode of operation which has the drawback of e.g. high dark current. Here, we demonstrated the photovoltaic mode operation in graphene p-n junctions fabricated by a simple but effective electron irradiation method that induces n-type doping in intrinsic p-type graphene. The physical mechanism of the junction formation is owing to the substrate gating effect caused by electron irradiation. Photoresponse was obtained for this type of photodetector because the photoexcited electron-hole pairs can be separated in the graphene p-n junction by the built-in potential. The fabricated graphene p-n junction photodetectors exhibit a high detectivity up to ~3 × 1010 Jones (cm Hz1/2 W−1) at room temperature, which is on a par with that of the traditional III–V photodetectors. The demonstrated novel and simple scheme for obtaining graphene p-n junctions can be used for other optoelectronic devices such as solar cells and be applied to other two dimensional materials based devices.

  6. Temporal isolation of surface-acoustic-wave-driven luminescence from a lateral p n junction using pulsed techniques

    Science.gov (United States)

    Gell, J. R.; Ward, M. B.; Atkinson, P.; Bremner, S. P.; Anderson, D.; Norman, C. E.; Kataoka, M.; Barnes, C. H. W.; Jones, G. A. C.; Shields, A. J.; Ritchie, D. A.

    2008-04-01

    The authors report surface-acoustic-wave-driven luminescence from a lateral p-n junction formed by molecular-beam epitaxy regrowth of a modulation doped GaAs/AlGaAs quantum well on a patterned GaAs substrate. Pulsed techniques are used to isolate the surface-acoustic-wave-driven emission from any emission due to pick-up of the free-space electromagnetic wave. The luminescence provides a fast probe of the signals arriving at the p-n junction allowing the response of the junction to the surface-acoustic-wave to be studied in the time domain. Oscillations in the surface-acoustic-wave-driven component of the light intensity are resolved at the resonant frequency of the transducer, suggesting that the surface-acoustic-wave is transporting electrons across the junction in packets.

  7. Atomically Abrupt Topological p-n Junction.

    Science.gov (United States)

    Kim, Sung Hwan; Jin, Kyung-Hwan; Kho, Byung Woo; Park, Byeong-Gyu; Liu, Feng; Kim, Jun Sung; Yeom, Han Woong

    2017-08-24

    Topological insulators (TI's) are a new class of quantum matter with extraordinary surface electronic states, which bear great potential for spintronics and error-tolerant quantum computing. In order to put a TI into any practical use, these materials need to be fabricated into devices whose basic units are often p-n junctions. Interesting electronic properties of a 'topological' p-n junction were proposed theoretically such as the junction electronic state and the spin rectification. However, the fabrication of a lateral topological p-n junction has been challenging because of materials, process, and fundamental reasons. Here, we demonstrate an innovative approach to realize a p-n junction of topological surface states (TSS's) of a three-dimensional (3D) topological insulator (TI) with an atomically abrupt interface. When a ultrathin Sb film is grown on a 3D TI of Bi2Se3 with a typical n-type TSS, the surface develops a strongly p-type TSS through the substantial hybridization between the 2D Sb film and the Bi2Se3 surface. Thus, the Bi2Se3 surface covered partially with Sb films bifurcates into areas of n- and p-type TSS's as separated by atomic step edges with a lateral electronic junction of as short as 2 nm. This approach opens a different avenue toward various electronic and spintronic devices based on well-defined topological p-n junctions with the scalability down to atomic dimensions.

  8. Epitaxial growth of a monolayer WSe2-MoS2 lateral p-n junction with an atomically sharp interface

    Science.gov (United States)

    Li, Ming-Yang; Shi, Yumeng; Cheng, Chia-Chin; Lu, Li-Syuan; Lin, Yung-Chang; Tang, Hao-Lin; Tsai, Meng-Lin; Chu, Chih-Wei; Wei, Kung-Hwa; He-Hau, Jr.; Chang, Wen-Hao; Suenaga, Kazu; Li, Lain-Jong

    2015-07-01

    Two-dimensional transition metal dichalcogenides (TMDCs) such as molybdenum sulfide MoS2 and tungsten sulfide WSe2 have potential applications in electronics because they exhibit high on-off current ratios and distinctive electro-optical properties. Spatially connected TMDC lateral heterojunctions are key components for constructing monolayer p-n rectifying diodes, light-emitting diodes, photovoltaic devices, and bipolar junction transistors. However, such structures are not readily prepared via the layer-stacking techniques, and direct growth favors the thermodynamically preferred TMDC alloys. We report the two-step epitaxial growth of lateral WSe2-MoS2 heterojunction, where the edge of WSe2 induces the epitaxial MoS2 growth despite a large lattice mismatch. The epitaxial growth process offers a controllable method to obtain lateral heterojunction with an atomically sharp interface.

  9. Epitaxial growth of a monolayer WSe2-MoS2 lateral p-n junction with an atomically sharp interface

    KAUST Repository

    Li, Ming Yang

    2015-07-30

    Two-dimensional transition metal dichalcogenides (TMDCs) such as molybdenum sulfide MoS2 and tungsten sulfide WSe2 have potential applications in electronics because they exhibit high on-off current ratios and distinctive electro-optical properties. Spatially connected TMDC lateral heterojunctions are key components for constructing monolayer p-n rectifying diodes, light-emitting diodes, photovoltaic devices, and bipolar junction transistors. However, such structures are not readily prepared via the layer-stacking techniques, and direct growth favors the thermodynamically preferred TMDC alloys. We report the two-step epitaxial growth of lateral WSe2-MoS2 heterojunction, where the edge of WSe2 induces the epitaxial MoS2 growth despite a large lattice mismatch. The epitaxial growth process offers a controllable method to obtain lateral heterojunction with an atomically sharp interface.

  10. Silicon fiber with p-n junction

    Energy Technology Data Exchange (ETDEWEB)

    Homa, D.; Cito, A.; Pickrell, G.; Hill, C.; Scott, B. [Department of Materials Science and Engineering, Virginia Polytechnic Institute and State University, 312 Holden Hall, Blacksburg, Virginia 24060 (United States)

    2014-09-22

    In this study, we fabricated a p-n junction in a fiber with a phosphorous doped silicon core and fused silica cladding. The fibers were fabricated via a hybrid process of the core-suction and melt-draw techniques and maintained overall diameters ranging from 200 to 900 μm and core diameters of 20–800 μm. The p-n junction was formed by doping the fiber with boron and confirmed via the current-voltage characteristic. The demonstration of a p-n junction in a melt-drawn silicon core fiber paves the way for the seamless integration of optical and electronic devices in fibers.

  11. Multiplication in Silicon p-n Junctions

    DEFF Research Database (Denmark)

    Moll, John L.

    1965-01-01

    Multiplication values were measured in the collector junctions of silicon p-n-p and n-p-n transistors before and after bombardment by 1016 neutrons/cm2. Within experimental error there was no change either in junction fields, as deduced from capacitance measurements, or in multiplication values...... in any of the transistors. The implication is that the electron and hole ionization rates did not change as a result of the addition of extra scattering centers. This result is in direct contradiction to observations of Lee et al. The most likely explanation for the discrepancy is erroneous determination...

  12. Single P-N junction tandem photovoltaic device

    Science.gov (United States)

    Walukiewicz, Wladyslaw; Ager, III, Joel W.; Yu, Kin Man

    2011-10-18

    A single P-N junction solar cell is provided having two depletion regions for charge separation while allowing the electrons and holes to recombine such that the voltages associated with both depletion regions of the solar cell will add together. The single p-n junction solar cell includes an alloy of either InGaN or InAlN formed on one side of the P-N junction with Si formed on the other side in order to produce characteristics of a two junction (2J) tandem solar cell through only a single P-N junction. A single P-N junction solar cell having tandem solar cell characteristics will achieve power conversion efficiencies exceeding 30%.

  13. Single P-N junction tandem photovoltaic device

    Science.gov (United States)

    Walukiewicz, Wladyslaw [Kensington, CA; Ager, III, Joel W.; Yu, Kin Man [Lafayette, CA

    2012-03-06

    A single P-N junction solar cell is provided having two depletion regions for charge separation while allowing the electrons and holes to recombine such that the voltages associated with both depletion regions of the solar cell will add together. The single p-n junction solar cell includes an alloy of either InGaN or InAlN formed on one side of the P-N junction with Si formed on the other side in order to produce characteristics of a two junction (2J) tandem solar cell through only a single P-N junction. A single P-N junction solar cell having tandem solar cell characteristics will achieve power conversion efficiencies exceeding 30%.

  14. Electron optics with p-n junctions in ballistic graphene

    Science.gov (United States)

    Chen, Shaowen; Han, Zheng; Elahi, Mirza M.; Habib, K. M. Masum; Wang, Lei; Wen, Bo; Gao, Yuanda; Taniguchi, Takashi; Watanabe, Kenji; Hone, James; Ghosh, Avik W.; Dean, Cory R.

    2016-09-01

    Electrons transmitted across a ballistic semiconductor junction are expected to undergo refraction, analogous to light rays across an optical boundary. In graphene, the linear dispersion and zero-gap band structure admit highly transparent p-n junctions by simple electrostatic gating. Here, we employ transverse magnetic focusing to probe the propagation of carriers across an electrostatically defined graphene junction. We find agreement with the predicted Snell’s law for electrons, including the observation of both positive and negative refraction. Resonant transmission across the p-n junction provides a direct measurement of the angle-dependent transmission coefficient. Comparing experimental data with simulations reveals the crucial role played by the effective junction width, providing guidance for future device design. Our results pave the way for realizing electron optics based on graphene p-n junctions.

  15. Nonlinear screening and ballistic transport in a graphene p-n junction.

    Science.gov (United States)

    Zhang, L M; Fogler, M M

    2008-03-21

    We study the charge density distribution, the electric field profile, and the resistance of an electrostatically created lateral p-n junction in graphene. We show that the electric field at the interface of the electron and hole regions is strongly enhanced due to limited screening capacity of Dirac quasiparticles. Accordingly, the junction resistance is lower than estimated in previous literature.

  16. Nonlinear screening and ballistic transport in a graphene p-n junction

    OpenAIRE

    Zhang, L. M.; Fogler, M. M.

    2007-01-01

    We study the charge density distribution, the electric field profile, and the resistance of an electrostatically created lateral p-n junction in graphene. We show that the electric field at the interface of the electron and hole regions is strongly enhanced due to limited screening capacity of Dirac quasiparticles. Accordingly, the junction resistance is lower than estimated in previous literature.

  17. Studies of silicon p-n junction solar cells

    Science.gov (United States)

    Neugroschel, A.; Lindholm, F. A.

    1979-01-01

    To provide theoretical support for investigating different ways to obtain high open-circuit voltages in p-n junction silicon solar cells, an analytical treatment of heavily doped transparent-emitter devices is presented that includes the effects of bandgap narrowing, Fermi-Dirac statistics, a doping concentration gradient, and a finite surface recombination velocity at the emitter surface. Topics covered include: (1) experimental determination of bandgap narrowing in the emitter of silicon p-n junction devices; (2) heavily doped transparent regions in junction solar cells, diodes, and transistors; (3) high-low-emitter solar cell; (4) determination of lifetimes and recombination currents in p-n junction solar cells; (5) MOS and oxide-charged-induced BSF solar cells; and (6) design of high efficiency solar cells for space and terrestrial applications.

  18. Electronic transmission through p-n and n-p-n junctions of graphene

    Energy Technology Data Exchange (ETDEWEB)

    Setare, M R [Department of Science of Bijar, University of Kurdistan, Bijar (Iran, Islamic Republic of); Jahani, D, E-mail: rezakord@ipm.co, E-mail: Dariush110@gmail.co [Department of Physics, Razi University, Kermanshah (Iran, Islamic Republic of)

    2010-06-23

    In this paper, we first evaluate the electronic transmission of Dirac fermions into a p-n junction of gapped graphene and show that the final result depends on the sign of the refractive index, n. We also, by considering the appropriate wavefunctions in the region of the electrostatic potential, show that both transmission and the reflection probability turn out to be positive and less than unity instead of the negative transmission and higher than unity reflection coefficient commonly referred to as the Klein paradox. We then obtain the transmission probability corresponding to a special p-n junction for which there exists a region in which the low energy excitations of graphene acquire a finite mass and, interestingly, find that in this case the transmission is independent of the index of refraction, in contrast with the corresponding result for gapped graphene. We then discuss the validity of the solutions reported in some of the papers cited in this work which, considering the Buettiker formula, turn out to lead to the wrong results for conductivity.

  19. Maskless Selective Growth Method for p-n Junction Applications on (001)-Oriented Diamond

    Science.gov (United States)

    Kato, Hiromitsu; Makino, Toshiharu; Ogura, Masahiko; Takeuchi, Daisuke; Yamasaki, Satoshi

    2012-09-01

    A maskless selective growth method by chemical vapor deposition (CVD) is a promising technique for fabricating various types of p-n junction devices on diamond semiconductors, instead of the impurity doping by ion-implantation technique. We control diamond growth and impurity doping using patterned surface morphologies of (001)-oriented diamond, which results in a selective growth along the or direction. In the case of phosphorus doping, the diamond with selective growth shows the n-type conducting property, whereas that with selective growth shows the insulating property owing to the coincorporation of hydrogen. Such strong orientational properties are peculiar in CVD phosphorus doping. The detailed procedures of this selective growth method and the electrical properties of fabricated vertical and lateral p-n junction diodes are described in this article.

  20. Linearity of P-N junction photodiodes under pulsed irradiation

    CERN Document Server

    Stuik, R

    2002-01-01

    The dependence of the sensitivity on the radiation pulse length for a P-N junction photodiode has been investigated over an extended range of pulse lengths, from 170 ns to 1.2 ms. The power incident on the diode surface was varied between 1.6 and 118 mW. A novel method was used to generate the light pulses with variable length, while keeping the temporal pulse shape and the intensity constant. The method consists of using a rotating mirror in combination with a DC light source, in our case at 633 and 532 nm. In this way, the pulse shape only depends on the geometry of the setup, with the pulse length solely determined by the rotation frequency of the mirror. No further calibration is needed for determination of the pulse intensity and shape. Accuracies obtained are better than 2%, mainly determined by instabilities in the setup. The sensitivity of an IRD AXUV-100 photodiode was studied, both with and without a reverse bias voltage applied. At unbiased conditions and irradiation levels well below the saturatio...

  1. Chaotic Behaviour of a Driven P-N Junction

    Science.gov (United States)

    Perez, Jose Maria

    The chaotic behavior of a driven p-n junction is experimentally examined. Bifurcation diagrams for the system are measured, showing period doubling bifurcations up to f/32, onset of chaos, reverse bifurcations of chaotic bands, and periodic windows. Some of the measured bifurcation diagrams are similar to the bifurcation diagram of the logistic map x(,n+1) = (lamda)x(,n)(1 - x(,n)). A return map is also measured showing approximately a one-dimensional map with a single extremum at low driving voltages. The intermittency route to chaos is experimentally observed to occur near a tangent bifurcation as the system approaches a period 5 window at (lamda) = (lamda)(,5). Data are presented for the dependence of the average laminar length on (epsilon) = (lamda)(,5) - (lamda), and for the probability distribution P(l) vs. l. The effects of additive stochastic noise on period doubling, chaos, windows, and intermittency are examined and are found to agree with the logistic model and universal predictions. Three examples of crisis of the attractor are observed. The crises occur when an unstable orbit intersects the chaotic attractor. A period adding sequence is reported in which wide periodic windows of period 2, 3, 4, ... are observed for increasing driving voltage. The initial period doubling cascade and the period adding sequence are compared to two theoretical models, with reasonable success.

  2. Imaging the p-n junction in a gallium nitride nanowire with a scanning microwave microscope

    Energy Technology Data Exchange (ETDEWEB)

    Imtiaz, Atif [Physical Measurement Laboratory, National Institute of Standards and Technology, Boulder, Colorado 80305 (United States); Department of Electrical, Computer, and Energy Engineering, University of Colorado, Boulder, Colorado 80309 (United States); Wallis, Thomas M.; Brubaker, Matt D.; Blanchard, Paul T.; Bertness, Kris A.; Sanford, Norman A.; Kabos, Pavel, E-mail: kabos@boulder.nist.gov [Physical Measurement Laboratory, National Institute of Standards and Technology, Boulder, Colorado 80305 (United States); Weber, Joel C. [Physical Measurement Laboratory, National Institute of Standards and Technology, Boulder, Colorado 80305 (United States); Department of Mechanical Engineering, University of Colorado, Boulder, Colorado 80309 (United States); Coakley, Kevin J. [Information Technology Laboratory, National Institute of Standards and Technology, Boulder, Colorado 80305 (United States)

    2014-06-30

    We used a broadband, atomic-force-microscope-based, scanning microwave microscope (SMM) to probe the axial dependence of the charge depletion in a p-n junction within a gallium nitride nanowire (NW). SMM enables the visualization of the p-n junction location without the need to make patterned electrical contacts to the NW. Spatially resolved measurements of S{sub 11}{sup ′}, which is the derivative of the RF reflection coefficient S{sub 11} with respect to voltage, varied strongly when probing axially along the NW and across the p-n junction. The axial variation in S{sub 11}{sup ′}  effectively mapped the asymmetric depletion arising from the doping concentrations on either side of the junction. Furthermore, variation of the probe tip voltage altered the apparent extent of features associated with the p-n junction in S{sub 11}{sup ′} images.

  3. Nondestructive determination of the depth of planar p-n junctions by scanning electron microscopy

    Science.gov (United States)

    Chi, J.-Y.; Gatos, H. C.

    1977-01-01

    A method was developed for measuring nondestructively the depth of planar p-n junctions in simple devices as well as in integrated-circuit structures with the electron-beam induced current (EBIC) by scanning parallel to the junction in a scanning electron microscope (SEM). The results were found to be in good agreement with those obtained by the commonly used destructive method of lapping at an angle to the junction and staining to reveal the junction.

  4. Nondestructive determination of the depth of planar p-n junctions by scanning electron microscopy

    Science.gov (United States)

    Chi, J.-Y.; Gatos, H. C.

    1977-01-01

    A method was developed for measuring nondestructively the depth of planar p-n junctions in simple devices as well as in integrated-circuit structures with the electron-beam induced current (EBIC) by scanning parallel to the junction in a scanning electron microscope (SEM). The results were found to be in good agreement with those obtained by the commonly used destructive method of lapping at an angle to the junction and staining to reveal the junction.

  5. Theory of Landau level mixing in heavily graded graphene p -n junctions

    Science.gov (United States)

    LaGasse, Samuel W.; Lee, Ji Ung

    2016-10-01

    We demonstrate the use of a quantum transport model to study heavily graded graphene p -n junctions in the quantum Hall regime. A combination of p -n interface roughness and delta function disorder potential allows us to compare experimental results on different devices from the literature. We find that wide p -n junctions suppress mixing of n ≠0 Landau levels. Our simulations spatially resolve carrier transport in the device, revealing separation of higher order Landau levels in strongly graded junctions, which suppresses mixing.

  6. Study on Porous Silicon with P-N Junction Sensor for Humidity Measurement

    Institute of Scientific and Technical Information of China (English)

    Chuzhe Tu; Zhenhong Jia

    2006-01-01

    Porous materials used for humidity sensing have been commercialized. In this paper, the preparation and humidity sensing characteristics of porous silicon with P-N junctions (PNJPS) are studied. PNJPS is made by electro-chemical anodic etched method from silicon wafers with P-N junctions. Its porous structure is verified by scanning electronic micrograph.Experiments also show that PNJPS has high sensitivity, short response time (less than 30 seconds), and long-term stability.

  7. Built-in voltage of a silicon p-n junction having a heavily doped region

    Science.gov (United States)

    Sinha, Amitabha

    1984-01-01

    An analysis of the built-in voltage of a silicon p-n junction has been done, taking into account the band-gap narrowing effects in the heavily doped region. It has been observed that much lower values of built-in voltage are obtained when heavy doping effects are considered. Also, the magnitude of built-in voltage decreases when the temperature of the p-n junction is increased.

  8. Dynamic visualization of axial p-n junctions in single gallium nitride nanorods under electrical bias.

    Science.gov (United States)

    Lu, Yu-Jung; Lu, Ming-Yen; Yang, Yu-Chen; Chen, Hung-Ying; Chen, Lih-Juann; Gwo, Shangjr

    2013-09-24

    We demonstrate a direct visualization method based on secondary electron (SE) imaging in scanning electron microscopy for mapping electrostatic potentials across axial semiconductor nanorod p-n junctions. It is found that the SE doping contrast can be directly related to the spatial distribution of electrostatic potential across the axial nanorod p-n junction. In contrast to the conventional SE doping contrast achieved for planar p-n junctions, the quasi-one-dimensional geometry of nanorods allows for high-resolution, versatile SE imaging under high accelerating voltage, long working distance conditions. Furthermore, we are able to delineate the electric field profiles across the axial nanorod p-n junction as well as depletion widths at different reverse biases. By using standard p-n junction theory and secondary ion mass spectroscopy, the carrier concentrations of p- and n-regions can be further extracted from the depletion widths under reverse biasing conditions. This direct imaging method enables determination of electrostatic potential variation of p-n junctions in semiconductor nanorod and nanowire devices with a spatial resolution better than 10 nm.

  9. Focusing RKKY interaction by graphene P-N junction

    Science.gov (United States)

    Zhang, Shu-Hui; Zhu, Jia-Ji; Yang, Wen; Chang, Kai

    2017-09-01

    The carrier-mediated RKKY interaction between local spins plays an important role for the application of magnetically doped graphene in spintronics and quantum computation. Previous studies largely concentrate on the influence of electronic states of uniform systems on the RKKY interaction. Here we reveal a very different way to manipulate the RKKY interaction by showing that the anomalous focusing—a well-known electron optics phenomenon in graphene P-N junctions—can be utilized to refocus the massless Dirac electrons emanating from one local spin to the other local spin. This gives rise to rich spatial interference patterns and symmetry-protected non-oscillatory RKKY interaction with a strongly enhanced magnitude. It may provide a new way to engineer the long-range spin-spin interaction in graphene.

  10. Quantized four-terminal resistances in a ferromagnetic graphene p-n junction.

    Science.gov (United States)

    Xu, Lei; An, Jin; Gong, Chang-De

    2012-06-06

    The quantum Hall and longitudinal resistances in four-terminal ferromagnetic graphene p-n junctions under a perpendicular magnetic field are investigated. In the Hall measurement, the transverse contacts are assumed to be located at the p-n interface to avoid the mixing of edge states at the interface and the resulting quantized resistances are then topologically protected. According to the charge carrier type, the resistances in a four-terminal p-n junction can be naturally divided into nine different regimes. The symmetric Hall and longitudinal resistances are observed, with many new robust quantum plateaus revealed due to the competition between spin splitting and local potentials.

  11. Laser direct writing of modulation-doped nanowire p/n junctions

    Science.gov (United States)

    Nam, Woongsik; Mitchell, James I.; Xu, Xianfan

    2016-12-01

    We demonstrate a single-step, laser-based technique to fabricate axial modulation-doped silicon nanowires. Our method is based on laser-direct-write chemical vapor deposition and has the capability to fabricate nanowires as small as 60 nm, which is far below the diffraction limit of the laser wavelength of 395 nm, with precise control of nanowire position, length, and orientation. By switching dopant gases during nanowire writing, p-n junction nanowires are produced. The p-n junction nanowires are fabricated into multifinger devices with parallel metal contacts and electrically tested to demonstrate diode characteristics.

  12. Turn-on and turn-off voltages of an avalanche p-n junction

    Institute of Scientific and Technical Information of China (English)

    Zhang Guoqing; Han Dejun; Zhu Changjun; Zhai Xuejun

    2012-01-01

    Characteristics of the turn-on and turn-off voltage of avalanche p-n junctions were demonstrated and studied.As opposed to existing reports,the differences between the turn-on and turn-off voltage cannot be neglected when the size of the p-n junction is in the order of microns.The difference increases inversely with the area of a junction,exerting significant influences on characterizing some parameters of devices composed of small avalanche junctions.Theoretical analyses show that the mechanism for the difference lies in the increase effect of the threshold multiplication factor at the turn-on voltage of a junction when the area of a junction decreases.Moreover,the "breakdown voltage" in the formula of the avalanche asymptotic current is,in essence,the avalanche turn-off voltage,and consequently,the traditional expression of the avalanche asymptotic current and the gain of a Geiger mode avalanche photodiode were modified.

  13. Graphene p n junction in a quantizing magnetic field: Conductance at intermediate disorder strength

    Science.gov (United States)

    Fräßdorf, Christian; Trifunovic, Luka; Bogdanoff, Nils; Brouwer, Piet W.

    2016-11-01

    In a graphene p n junction at high magnetic field, unidirectional "snake states" are formed at the p n interface. In a clean p n junction, each snake state exists in one of the valleys of the graphene band structure, and the conductance of the junction as a whole is determined by microscopic details of the coupling between the snake states at the p n interface and quantum Hall edge states at the sample boundaries [Tworzydło et al., Phys. Rev. B 76, 035411 (2007), 10.1103/PhysRevB.76.035411]. Disorder mixes and couples the snake states. We here report a calculation of the full conductance distribution in the crossover between the clean limit and the strong-disorder limit, in which the conductance distribution is given by random matrix theory [Abanin and Levitov, Science 317, 641 (2007), 10.1126/science.1144672]. Our calculation involves an exact solution of the relevant scaling equation for the scattering matrix, and the results are formulated in terms of parameters describing the microscopic disorder potential in bulk graphene.

  14. Photothermoelectric p-n junction photodetector with intrinsic broadband polarimetry based on macroscopic carbon nanotube films.

    Science.gov (United States)

    He, Xiaowei; Wang, Xuan; Nanot, Sébastien; Cong, Kankan; Jiang, Qijia; Kane, Alexander A; Goldsmith, John E M; Hauge, Robert H; Léonard, François; Kono, Junichiro

    2013-08-27

    Light polarization is used in the animal kingdom for communication, navigation, and enhanced scene interpretation and also plays an important role in astronomy, remote sensing, and military applications. To date, there have been few photodetector materials demonstrated to have direct polarization sensitivity, as is usually the case in nature. Here, we report the realization of a carbon-based broadband photodetector, where the polarimetry is intrinsic to the active photodetector material. The detector is based on p-n junctions formed between two macroscopic films of single-wall carbon nanotubes. A responsivity up to ~1 V/W was observed in these devices, with a broadband spectral response spanning the visible to the mid-infrared. This responsivity is about 35 times larger than previous devices without p-n junctions. A combination of experiment and theory is used to demonstrate the photothermoelectric origin of the responsivity and to discuss the performance attributes of such devices.

  15. Effect of deep dislocation levels in silicon on the properties of p-n junctions

    Energy Technology Data Exchange (ETDEWEB)

    Zakharov, A.G.; Dudko, V.G.; Nabokov, G.M.; Sechenov, D.A.

    1988-07-01

    We present the results of studies on the influence of deep levels, due to dislocations in electronic-grade silicon, on the lifetime of minority carriers and on the current-voltage and capacitance-voltage characteristics of p-n junctions. The parameters of the deep levels were determined by means of dynamic spectroscopy. The carrier lifetime in the high-resistance region of the p-n junction correlates well with the dislocation density and varies from 10/sup /minus/7/ sec to 3 /centered dot/10/sup /minus/6/ sec when the dislocation density N/sub d/ varies from 10/sup 7/ cm/sup /minus/2/ to 5 /centered dot/10/sup 3/ cm/sup /minus/2/. The voltage across the p-n junction at a high level of injection varies 1.6 to 6.2 v as a function of N/sub d/. The ionization energy of deep levels associated with dislocation in silicon is 0.44 and 0.57 eV, measured from the bottom of the conduction band.

  16. Properties of Edge States at the Graphene P-N Junction Interface

    Science.gov (United States)

    Le, Son; Klimov, Nikolai; Newell, David; Yan, Jun; Lee, Ji Ung; Richter, Curt

    The Landau level edge states from the p- and the n-section of a graphene P/N junction (pnJ) interact with each other differently across the junction depending upon the properties of the junction and the graphene. Full equilibration was reported for a two terminal graphene pnJ device in Williams et al.. In our four-terminal device, however, only the lowest Landau level edge state is equilibrated across the pnJ. When the two devices are compared, the LL energy spacings, the length of the edge states along the pnJ interface, and the carrier mobility are similar. Electrostatic simulations for our device geometry and that of contrast the rate of change of the electrostatic potential across the pnJs. Edge states at an electrostatically smooth junction are spatially further apart than those at a relatively abrupt junction, which decreases the probability of edge states mixing. Thus, we attribute the difference in equilibration in our device and that of to the dramatic difference in the shape of the electrostatic junction.

  17. Veselago lensing in graphene with a p-n junction: Classical versus quantum effects

    Energy Technology Data Exchange (ETDEWEB)

    Milovanović, S. P., E-mail: slavisa.milovanovic@uantwerpen.be; Moldovan, D., E-mail: dean.moldovan@uantwerpen.be; Peeters, F. M., E-mail: francois.peeters@uantwerpen.be [Departement Fysica, Universiteit Antwerpen, Groenenborgerlaan 171, B-2020 Antwerpen (Belgium)

    2015-10-21

    The feasibility of Veselago lensing in graphene with a p-n junction is investigated numerically for realistic injection leads. Two different set-ups with two narrow leads are considered with absorbing or reflecting side edges. This allows us to separately determine the influence of scattering on electron focusing for the edges and the p-n interface. Both semiclassical and tight-binding simulations show a distinctive peak in the transmission probability that is attributed to the Veselago lensing effect. We investigate the robustness of this peak on the width of the injector, the position of the p-n interface, and different gate potential profiles. Furthermore, the influence of scattering by both short- and long-range impurities is considered.

  18. Enhanced spin Seebeck effect in a germanene p-n junction

    Energy Technology Data Exchange (ETDEWEB)

    Zheng, Jun [College of New Energy, Bohai University, Jinzhou 121013 (China); Chi, Feng [School of Physical Science and Technology, Inner Mongolia University, Huhehaote 010023 (China); College of Engineering, Bohai University, Jinzhou 121013 (China); Guo, Yong [Department of Physics and State Key Laboratory of Low-Dimensional Quantum Physics, Tsinghua University, Beijing 100084 (China); Collaborative Innovation of Quantum Matter, Beijing (China)

    2014-12-28

    Spin Seebeck effect in a germanene p-n junction is studied by using the nonequilibrium Green's function method combined with the tight-binding Hamiltonian. We find that the thermal bias ΔT can generate spin thermopower when a local exchange field is applied on one edge of the germanene nano-ribbon. The magnitude of the spin thermopower can be modulated by the potential drop across the two terminals of the p-n junction. When the value of the potential drop is smaller than the spin-orbit interaction strength, the spin thermopower is enhanced by two orders of magnitude larger as compared to the case of zero p-n voltage. Optimal temperature corresponding to maximum spin thermopower is insensitive to the potential drop. In the p-n region, maximum spin thermopower can be obtained at relatively higher temperatures. When the value of the potential drop is larger than that of the spin-orbit interaction, however, the spin Seebeck effect decays rapidly with increasing potential drop or temperature. By optimizing the structure parameters, the magnitude of the spin thermopower can be remarkably enhanced due to the coexistence of the exchange field and the potential drop.

  19. Lateral junction dynamics lead the way out.

    Science.gov (United States)

    Behrndt, Martin; Heisenberg, Carl-Philipp

    2014-02-01

    Epithelial cell layers need to be tightly regulated to maintain their integrity and correct function. Cell integration into epithelial sheets is now shown to depend on the N-WASP-regulated stabilization of cortical F-actin, which generates distinct patterns of apical-lateral contractility at E-cadherin-based cell-cell junctions.

  20. Study of seed layer effect in nuclear battery with P-N diode junction

    Energy Technology Data Exchange (ETDEWEB)

    Uhm, Young Rang; Son, Kwang Jae; Lee, Jun Sig [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of); Choi, Byoung Gun [Kookmin Univ., Seoul (Korea, Republic of)

    2014-10-15

    A nuclear battery with diode junction is a device that converts nuclear radiation directly to electric power. The mechanism of a nuclear battery is same as the P-N junction diode for solar cell application. The photovoltaic is operated by converted photons to electrical energy in the junction. In betavoltaic battery, beta particles are collected and converted to electrical energy as similar principle as photovoltaic. A very low current, order of nano or micro amps, is generated in devices. If a radioisotope (RI) with a long halflife (over 50 years) is used, a lifetime of a power source is extended as long as halflife time of RI.. Some special applications require long-lived compact power sources. These include space equipment, sensors in remote locations (space, underground, etc.), and implantable medical devices. Conventionally, these sources rely on converting chemical energy to electricity. This means they require a large storage of chemical 'fuel' since the amount of energy released per reaction is small. The nuclear battery is a novel solution to solve the power needs of these applications. For the {sup 63}Ni beta-source we used, the half-life is 100.2 years. Hence, the power sources we describe could extend a system's operating life by several decades or even a century, during which time the system could gain learned behavior without worrying about the power turning off. Radioactive thin-film-based power sources also have energy density orders of magnitude higher than chemical-reaction-based energy sources. In this study, we fabricate nuclear battery using {sup 63}Ni source with diode junction, and studied seed layer effect for optimization of structure of p-n junction.

  1. CMOS buried quad p-n junction photodetector for multi-wavelength analysis.

    Science.gov (United States)

    Richard, Charles; Courcier, Thierry; Pittet, Patrick; Martel, Stéphane; Ouellet, Luc; Lu, Guo-Neng; Aimez, Vincent; Charette, Paul G

    2012-01-30

    This paper presents a buried quad p-n junction (BQJ) photodetector fabricated with a HV (high-voltage) CMOS process. Multiple buried junction photodetectors are wavelength-sensitive devices developed for spectral analysis applications where a compact integrated solution is preferred over systems involving bulk optics or a spectrometer due to physical size limitations. The BQJ device presented here is designed for chip-based biochemical analyses using simultaneous fluorescence labeling of multiple analytes such as with advanced labs-on-chip or miniaturized photonics-based biosensors. Modeling and experimental measurements of the spectral response of the device are presented. A matrix-based method for estimating individual spectral components in a compound spectrum is described. The device and analysis method are validated via a test setup using individually modulated LEDs to simulate light from 4-component fluorescence emission.

  2. Investigation of defects in boron implanted silicon by means of p-n junction

    Energy Technology Data Exchange (ETDEWEB)

    Lenhard, R. (Tesla, Roznov pod Radhostem (Czechoslovakia)); Luby, S. (Slovenska Akademia Vied, Bratislava (Czechoslovakia). Fyzikalny Ustav)

    1990-01-01

    A simple electrical method for the evaluation of radiation damage in implanted silicon is described. It is based on the measurement of reverse current of a p-n junction. Radiation defects were formed by implantation of boron at the doses of N{sub d} = 10{sup 11} and 10{sup 12} cm{sup -2}, respectively. The maxima of the distribution of defects were within the depletion region of the junctions. Samples were annealed at temperatures up to 500{sup 0}C. These conditions were sufficient for the recombination of practically all defects. The activation energy of the radiation damage recovery had values between 0.14 and 0.26 eV. The recovery of defects during ion implantation was observed. (author).

  3. Enhancement of the spin Hall voltage in a reverse-biased planar p -n junction

    Science.gov (United States)

    Nádvorník, L.; Olejník, K.; Němec, P.; Novák, V.; Janda, T.; Wunderlich, J.; Trojánek, F.; Jungwirth, T.

    2016-08-01

    We report an experimental demonstration of a local amplification of the spin Hall voltage using an expanding depletion zone at a p -n junction in GaAs/AlGaAs Hall-bar microdevices. It is demonstrated that the depletion zone can be spatially expanded by applying reverse bias by at least 10 μ m at low temperature. In the depleted regime, the spin Hall signals reached more than one order of magnitude higher values than in the normal regime at the same electrical current flowing through the microdevice. It is shown that the p -n bias has two distinct effects on the detected spin Hall signal. It controls the local drift field at the Hall cross which is highly nonlinear in the p -n bias due to the shift of the depletion front. Simultaneously, it produces a change in the spin-transport parameters due to the nonlinear change in the carrier density at the Hall cross with the p -n bias.

  4. Electrical Properties and Electroluminescence of 4H-SiC p-n Junction Diodes

    Institute of Scientific and Technical Information of China (English)

    Sun Guosheng; Zhang Yongxing; Gao Xin; Wang Lei; Zhao Wanshun; Zeng Yiping; Li Jinmin

    2004-01-01

    Homoepitaxial growth of 4H-SiC on off-oriented Si-face(0001 ) substrates was performed by using the step-controlled epitaxy technique in a newly developed low-pressure hot-wall CVD (LP-HWCVD) system with a horizontal aircooled quartz tube at around 1500 ℃and 1.33 × 104 Pa by employing SiH4 + C2H4 + H2. In-situ doping during growth was carried out by adding NH3 gas into the precursor gases. It was shown that the maximum Hall mobility of the undoped 4H-SiC epilayers at room temperature is about 430 cm2 ·V -1 ·s -1 with a carrier concentration of ~ 1016 cm-3 and the highest carrier concentration of the N-doped 4H-SiC epilayer obtained at NH3 flow rate of 3 sccm is about 2.7 × 1021 cm-3 with a mobility of 0.75 cm2 ·V -1 ·S -1. SiC p-n junctions were obtained by epitaxially growing N-doped 4H-SiC epilayers on Aldoped 4H-SiC substrates. The C-V characteristics of the diodes were linear in the 1/C3-V coordinates indicating that the obtained p-n junctions were graded with a built-in voltage of 2.7 eV. The room temperature electroluminescence spectra of 4H-SiC p-n junctions are studied as a function of forward current. The D-A pair recombination due to nitrogen donors and the unintentional, deep boron center is dominant at low forward bias, while the D-A pair recombination due to nitrogen donors and aluminum acceptors are dominant at higher forward biases. The p-n junctions could operate at temperature of up to 400 ℃, which provides a potential for high-temperature applications.

  5. Axially connected nanowire core-shell p-n junctions: a composite structure for high-efficiency solar cells.

    Science.gov (United States)

    Wang, Sijia; Yan, Xin; Zhang, Xia; Li, Junshuai; Ren, Xiaomin

    2015-01-01

    A composite nanostructure for high-efficiency solar cells that axially connects nanowire core-shell p-n junctions is proposed. By axially connecting the p-n junctions in one nanowire, the solar spectrum is separated and absorbed in the top and bottom cells with respect to the wavelength. The unique structure of nanowire p-n junctions enables substantial light absorption along the nanowire and efficient radial carrier separation and collection. A coupled three-dimensional optoelectronic simulation is used to evaluate the performance of the structure. With an excellent current matching, a promising efficiency of 19.9% can be achieved at a low filling ratio of 0.283 (the density of the nanowire array), which is much higher than the tandem axial p-n junctions.

  6. Modeling the Effect of P-N Junction Depth on the Output of Planer and Rectangular Textured Solar Cells

    Directory of Open Access Journals (Sweden)

    F. Jahanshah

    2009-01-01

    Full Text Available Problem statement: High cost of the solar cells is one of the important limitations in extensively using of the photovoltaic panels. Thin monocrystalline silicon solar cell could be reduce the cost but lost the absorption efficiency. Surface texturing help to enhance absorption. Using of advance texturing by diffraction grating was suggested for high absorption. It is necessary to investigate the scattering effect of diffraction grating with other solar cell parameter for optimization. In first step we concentrate on p-n junction position impact by modeling. Approach: The effect of position of p-n junction on the output current for both micro rectangular texturing and planer surface in solar cell has been investigated by ray tracing. Modeling of nine pairs solar cells with the same texture and planer surfaces but with different p-n junction position are done by using Atlas software. The output short current is a criterion for determining of efficiency performance. By comparing of the short current for each pair we was find the impacts of texturing and p-n junction depth on the monocrystalline thin film. Results: Light scattering due to diffraction grating inside the silicon with rectangular depth of 5 µm and a range of 5-40 µm p-n junction depths are investigated. The difference of short current in textured to bare silicon showed the enhancement from 4-8 µA when the p-n junction depths vary from 5-45 µm. Conclusions: Comparison of short current output confirms the correlation between p-n junction depth and texturing. Advanced texturing improve the solar cell efficiency but the effectiveness change with the p-n junction depth and need a simultaneous optimization for getting the high efficiency solar cell.

  7. Horizontal Silicon Nanowires with Radial p-n Junctions: A Platform for Unconventional Solar Cells.

    Science.gov (United States)

    Zhang, Xing; Pinion, Christopher W; Christesen, Joseph D; Flynn, Cory J; Celano, Thomas A; Cahoon, James F

    2013-06-20

    The silicon p-n junction is the most successful solar energy technology to date, yet it accounts for a marginal percentage of worldwide energy production. To change the status quo, a disruptive technological breakthrough is needed. In this Perspective, we discuss the potential for complex silicon nanowires to serve as a platform for next-generation photovoltaic devices. We review the synthesis, electrical characteristics, and optical properties of core/shell silicon nanowires that are subwavelength in diameter and contain radial p-n junctions. We highlight the unique features of these nanowires, such as optical antenna effects that concentrate light and intense built-in electric fields that enable ultrafast charge-carrier separation. We advocate a paradigm in which nanowires are arranged in periodic horizontal arrays to form ultrathin devices. Unlike conventional planar silicon, nanowire structures provide the flexibility to incorporate multiple semiconductor, dielectric, and metallic materials in a single system, providing the foundation for a disruptive, unconventional solar energy technology.

  8. Fabrication of a Graphene/ZnO based p-n junction device and its ultraviolet photoresponse properties

    Science.gov (United States)

    Kwon, Young-Tae; Kang, Sung-Oong; Cheon, Ji-Ae; Song, Yoseb; Lee, Jong-Jin; Choa, Yong-Ho

    2017-09-01

    Graphene with a zero-bandgap energy is easily doped using a chemical dopant, and a shift upwards or downwards in the Fermi level is generated. Moreover, the integration of inorganic material into the doped graphene changes the physical and chemical properties of the material. For this purpose, we successfully fabricated a p-n junction device by depositing an n-typed ZnO layer on p-doped graphene and studied the ultraviolet (UV) photoresponse properties under a photocurrent (UV light on) and a dark current (UV light off). Two devices, lateral and vertical, were developed by alternating the thickness of the ZnO layer, and the photoresponse mechanisms were described on the basis of the contact potential difference.

  9. Shot noise suppression in p-n junctions due to carrier generation-recombination

    Science.gov (United States)

    Maione, I. A.; Pellegrini, B.; Fiori, G.; Macucci, M.; Guidi, L.; Basso, G.

    2011-04-01

    We present a theoretical and experimental investigation of shot noise suppression in gallium arsenide and silicon p-n junctions due the to effect of generation-recombination phenomena. In particular, the availability of the cross-correlation technique and of ultra-low-noise amplifiers has allowed us to significantly extend, down to 10 pA, the range of bias current values for which results were available in the literature. To provide a quantitative understanding of the observed V-shape noise behavior, we have extended the Shockley-Read-Hall model for the trap-assisted generation-recombination mechanism. Such a model has represented the theoretical background for the performed Monte Carlo noise simulations, which have provided good agreement with the experimental results.

  10. Thin Film of Perovskite Oxide with Atomic Scale p-n Junctions

    Institute of Scientific and Technical Information of China (English)

    HU Bin; HUANG Ke-ke; HOU Chang-min; YUAN Hong-ming; PANG Guang-sheng; FENG Shou-hua

    2012-01-01

    Thin films of perovskite manganese oxide La0.66Ca0.29K0.05MnO3(LCKMO) on Au/ITO(ITO=indium tin oxide) substrates were prepared by off-axis radio frequency magnetron sputtering and characterized by X-ray diffraction(XRD),high-resolution transmission electron microscopy(HRTEM),and conductive atomic force microscopy (C-AFM) at room temperature.The thin films with thickness ranged from 100 nm to 300 nm basically show cubic structures with a=0.3886 nm,the same as that of the raw material used,but the structures are highly modulated.C-AFM results revealed that the atomic scale p-n junction feature of the thin films was the same as that of the single crystals.The preparation of the thin films thus further confirms the possibility of their application extending from micrometer-sized single crystals to macroscopic thin film.

  11. Solution-route low-temperature fabrication of thin-film p-n junctions

    Science.gov (United States)

    Panamá, Gustavo; Ayag, Kevin; Kim, Hongdoo

    2016-11-01

    In this work, p-n junctions were fabricated at low temperature by means of UV-assisted thermal annealing. At 200 °C, remarkable rectifying and optical properties were observed due to the conversion of the sol-gel precursors to oxide films, which was aided by UV exposure. The resulting p-NiO/n-ZnO structures are featured as the thinnest ever reported (≈55 nm) based on a solution process with a large forward electrical current 10 -2 -10 -1 A cm-2 and the lowest leakage current (1 μA cm-2). UV light and precursor solution engineering contributed to form metal-oxide bonding at relatively low temperature in ambient conditions. The heterojunctions fabricated by the proper combination of these alternatives and simple processes were evaluated using UV-vis and FT-IR spectroscopy, FE-SEM, AFM, XRD, XPS, and I-V curves.

  12. Mixed polarity in polarization-induced p-n junction nanowire light-emitting diodes.

    Science.gov (United States)

    Carnevale, Santino D; Kent, Thomas F; Phillips, Patrick J; Sarwar, A T M G; Selcu, Camelia; Klie, Robert F; Myers, Roberto C

    2013-07-10

    Polarization-induced nanowire light emitting diodes (PINLEDs) are fabricated by grading the Al composition along the c-direction of AlGaN nanowires grown on Si substrates by plasma-assisted molecular beam epitaxy (PAMBE). Polarization-induced charge develops with a sign that depends on the direction of the Al composition gradient with respect to the [0001] direction. By grading from GaN to AlN then back to GaN, a polarization-induced p-n junction is formed. The orientation of the p-type and n-type sections depends on the material polarity of the nanowire (i.e., Ga-face or N-face). Ga-face material results in an n-type base and a p-type top, while N-face results in the opposite. The present work examines the polarity of catalyst-free nanowires using multiple methods: scanning transmission electron microscopy (STEM), selective etching, conductive atomic force microscopy (C-AFM), and electroluminescence (EL) spectroscopy. Selective etching and STEM measurements taken in annular bright field (ABF) mode demonstrate that the preferred orientation for catalyst-free nanowires grown by PAMBE is N-face, with roughly 10% showing Ga-face orientation. C-AFM and EL spectroscopy allow electrical and optical differentiation of the material polarity in PINLEDs since the forward bias direction depends on the p-n junction orientation and therefore on nanowire polarity. Specifically, C-AFM reveals that the direction of forward bias for individual nanowire LEDs changes with the polarity, as expected, due to reversal of the sign of the polarization-induced charge. Electroluminescence measurements of mixed polarity PINLEDs wired in parallel show ambipolar emission due to the mixture of p-n and n-p oriented PINLEDs. These results show that, if catalyst-free III-nitride nanowires are to be used to form polarization-doped heterostructures, then it is imperative to understand their mixed polarity and to design devices using these nanowires accordingly.

  13. Analyses and Simulation of V-I Characteristics for Solar Cells Based on P-N Junction

    Institute of Scientific and Technical Information of China (English)

    ZHENG Jian-bang; REN Ju; GUO Wen-ge; HOU Chao-qi

    2005-01-01

    Through theoretical analyses of the Shockley equation and the difference between a practical P-N junction and its ideal model, the mathematical models of P-N junction and solar cells had been obtained. With Matlab software, the V-I characteristics of diodes and solar cells were simulated, and a computer simulation model of the solar cells based on P-N junction was also established. Based on the simulation model, the influences of solar cell's internal resistances on open-circuit voltage and short-circuit current under certain illumination were numerically analyzed and solved. The simulation results showed that the equivalent series resistance and shunt resistance could strongly affect the V-I characteristics of solar cell, but their influence styles were different.

  14. Efficient photocatalytic degradation of acid orange 7 on metal oxide p-n junction composites under visible light

    Science.gov (United States)

    Suk Jang, Jum; Gyu Kim, Hyun; Lee, Se-Hee

    2012-11-01

    MO(=CuO, Co3O4, NiO)/BiVO4 p-n junction composites were synthesized by urea-precipitation and wet impregnation method. The physicochemical and optical properties of the as-prepared materials were investigated by X-ray diffraction (XRD), X-ray photoelectron spectra (XPS), scanning electron microscopy (SEM), transmission electron microscopy (TEM), and UV-visible diffuse reflectance spectra. The photocatalytic performance of the as-prepared materials was investigated for decomposition of azo dye, acid orange 7. The CuO/BiVO4 and Co3O4/BiVO4 p-n junction composite photocatalysts exhibited the higher photocatalytic degradation of acid orange 7 than those of BiVO4 and NiO/BiVO4 as-prepared samples under visible light irradiation. We also discussed the mechanism of enhanced photocatalytic activity of p-n junctioned composites based on their energy band structures.

  15. Gate-tunable diode and photovoltaic effect in an organic-2D layered material p-n junction

    Science.gov (United States)

    Vélez, Saül; Ciudad, David; Island, Joshua; Buscema, Michele; Txoperena, Oihana; Parui, Subir; Steele, Gary A.; Casanova, Fèlix; van der Zant, Herre S. J.; Castellanos-Gomez, Andres; Hueso, Luis E.

    2015-09-01

    The semiconducting p-n junction is a simple device structure with great relevance for electronic and optoelectronic applications. The successful integration of low-dimensional materials in electronic circuits has opened the way forward for producing gate-tunable p-n junctions. In that context, we present here an organic (Cu-phthalocyanine)-2D layered material (MoS2) hybrid p-n junction with both gate-tunable diode characteristics and photovoltaic effect. Our proof-of-principle devices show multifunctional properties with diode rectifying factors of up to 104, while under light exposure they exhibit photoresponse with a measured external quantum efficiency of ~11%. As for their photovoltaic properties, we found open circuit voltages of up to 0.6 V and optical-to-electrical power conversion efficiency of 0.7%. The extended catalogue of known organic semiconductors and two-dimensional materials offer the prospect for tailoring the properties and the performance of the resulting devices, making organic-2D p-n junctions promising candidates for future technological applications.The semiconducting p-n junction is a simple device structure with great relevance for electronic and optoelectronic applications. The successful integration of low-dimensional materials in electronic circuits has opened the way forward for producing gate-tunable p-n junctions. In that context, we present here an organic (Cu-phthalocyanine)-2D layered material (MoS2) hybrid p-n junction with both gate-tunable diode characteristics and photovoltaic effect. Our proof-of-principle devices show multifunctional properties with diode rectifying factors of up to 104, while under light exposure they exhibit photoresponse with a measured external quantum efficiency of ~11%. As for their photovoltaic properties, we found open circuit voltages of up to 0.6 V and optical-to-electrical power conversion efficiency of 0.7%. The extended catalogue of known organic semiconductors and two-dimensional materials

  16. A DLTS study of 4H-SiC-based p-n junctions fabricated by boron implantation

    Energy Technology Data Exchange (ETDEWEB)

    Ivanov, P. A., E-mail: Pavel.Ivanov@mail.ioffe.ru; Potapov, A. S.; Samsonova, T. P. [Russian Academy of Sciences, Ioffe Physical Technical Institute (Russian Federation); Korol' kov, O.; Sleptsuk, N. [Tallinn University of Technology, Department of Electronics (Estonia)

    2011-10-15

    Deep-level transient spectroscopy (DLTS) has been used to study p-n junctions fabricated by implantation of boron into epitaxial 4H-SiC films with n-type conductivity and the donor concentration (8-9) Multiplication-Sign 10{sup 14} cm{sup -3}. A DLTS signal anomalous in sign is observed; this signal is related to recharging of deep compensating boron-involved centers in the n-type region near the metallurgical boundary of the p-n junction.

  17. Horizontal Assembly of Single Nanowire Diode Fabricated by p-n Junction GaN NW Grown by MOCVD

    Directory of Open Access Journals (Sweden)

    Ji-Hyeon Park

    2014-01-01

    Full Text Available Uniaxially p-n junction gallium nitride nanowires have been synthesized via metal-organic chemical vapor deposition method. Nanowires prepared on Si(111 substrates were found to grow perpendicular to the substrate, and the transmission electron microscopy studies demonstrated that the nanowires had singlecrystalline structures with a growth axis. The parallel assembly of the p-n junction nanowire was prepared on a Si substrate with a thermally grown SiO2 layer. The transport studies of horizontal gallium nitride nanowire structures assembled from p- and n-type materials show that these junctions correspond to well-defined p-n junction diodes. The p-n junction devices based on GaN nanowires suspended over the electrodes were fabricated and their electrical properties were investigated. The horizontally assembled gallium nitride nanowire diodes suspended over the electrodes exhibited a substantial increase in conductance under UV light exposure. Apart from the selectivity to different light wavelengths, high responsivity and extremely short response time have also been obtained.

  18. Atomic and electronic structure of a Rashba p-n junction at the BiTeI surface

    OpenAIRE

    Tournier-Colletta, C.; Autes, G.; Kierren, B.; Bugnon, Ph.; Berger, H.; Fagot-Revurat, Y.; Yazyev, O. V.; Grioni, M.; Malterre, D.

    2014-01-01

    The non-centrosymmetric semiconductor BiTeI exhibits two distinct surface terminations that support spin-split Rashba surface states. Their ambipolarity can be exploited for creating spin-polarized $p$-$n$ junctions at the boundaries between domains with different surface terminations. We use scanning tunneling microscopy/spectroscopy (STM/STS) to locate such junctions and investigate their atomic and electronic properties. The Te- and I-terminated surfaces are identified owing to their disti...

  19. p-n Junction Diodes Fabricated on Si-Si/Ge Heteroepitaxial Films

    Science.gov (United States)

    Das, K.; Mazumder, M. D. A.; Hall, H.; Alterovitz, Samuel A. (Technical Monitor)

    2000-01-01

    A set of photolithographic masks was designed for the fabrication of diodes in the Si-Si/Ge material system. Fabrication was performed on samples obtained from two different wafers: (1) a complete HBT structure with an n (Si emitter), p (Si/Ge base), and an n/n+ (Si collector/sub-collector) deposited epitaxially (MBE) on a high resistivity p-Si substrate, (2) an HBT structure where epitaxial growth was terminated after the p-type base (Si/Ge) layer deposition. Two different process runs were attempted for the fabrication of Si-Si/Ge (n-p) and Si/Ge-Si (p-n) junction diodes formed between the emitter-base and base-collector layers, respectively, of the Si-Si/Ge-Si HBT structure. One of the processes employed a plasma etching step to expose the p-layer in the structure (1) and to expose the e-layer in structure (2). The Contact metallization used for these diodes was a Cu-based metallization scheme that was developed during the first year of the grant. The plasma-etched base-collector diodes on structure (2) exhibited well-behaved diode-like characteristics. However, the plasma-etched emitter-base diodes demonstrated back-to-back diode characteristics. These back-to back characteristics were probably due to complete etching of the base-layer, yielding a p-n-p diode. The deep implantation process yielded rectifying diodes with asymmetric forward and reverse characteristics. The ideality factor of these diodes were between 1.6 -2.1, indicating that the quality of the MBE grown epitaxial films was not sufficiently high, and also incomplete annealing of the implantation damage. Further study will be conducted on CVD grown films, which are expected to have higher epitaxial quality.

  20. Methods for investigating the properties of polycrystalline silicon p-n junction solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Mazer, J.A.

    1981-01-01

    The degrading effects of areal inhomogeneity are demonstrated by means of a parallel-subcell equivalent circuit model. An experimental method is developed for assessing the validity of the shifting approximation for solar cells made from polysilicon and other material. The shifting approximation is valid for a variety of polysilicon solar cells in which the intra-grain base minority carrier diffusion length is smaller than or equal to the average grain diameter. The current components associated with the grain boundaries of diffused p-n junction polysilicon solar cells made on Wacker substrates are analyzed and experimentally identified. The dominant current component at small bias levels is the recombination current at the grain boundary within the space-charge region. At higher bias levels, both this current component and the current component due to recombination at that part of the grain boundary which is adjacent to the quasi-neutral base region are important. New electrical methods for determining the presence or absence of preferential diffusion along the grain boundaries and for determining the average doping density of preferentially diffused regions along the grain boundaries are described. A small-signal admittance mehtod is developed for the determination of the grain-boundary surface-state distribution in the energy gap for that part of a grain boundary which has been preferentially diffused with phosphorus.

  1. RKKY interaction in P-N junction based on surface states of 3D topological insulator

    Science.gov (United States)

    Zhang, Shuhui; Yang, Wen; Chang, Kai

    The RKKY interaction mediated by conduction electrons supplies a mechanism to realize the long-range coupling of localized spins which is desired for the spin devices. Here, we examine the controllability of RKKY interaction in P-N junction (PNJ) based on surface states of 3D topological insulator (3DTI). In this study, through quantum way but not usual classical analogy to light propagation, the intuitive picture for electron waves across the interface of PNJ is obtained, e.g., Klein tunneling, negative refraction and focusing. Moreover, we perform the numerical calculations for all kinds of RKKY interaction including the Heisenberg, Ising, and Dzyaloshinskii-Moriya terms. We find the focusing of surface states leads to the local augmentation of RKKY interaction. Most importantly, a dimension transition occurs, i.e., the decay rate of RKKY interaction from the deserved 1/R 2 to 1/ R . In addition, the quadratic gate-dependence of RKKY interaction is also beneficial to the application of 3DTI PNJ in the fields of spintronics and quantum computation. This work was supported by the MOST (Grant No. 2015CB921503, and No. 2014CB848700) and NSFC (Grant No. 11434010, No. 11274036, No. 11322542, and No. 11504018).

  2. Phonovoltaic. I. Harvesting hot optical phonons in a nanoscale p -n junction

    Science.gov (United States)

    Melnick, Corey; Kaviany, Massoud

    2016-03-01

    The phonovoltaic (pV) cell is similar to the photovoltaic. It harvests nonequilibrium (hot) optical phonons (Ep ,O) more energetic than the band gap (Δ Ee ,g) to generate power in a p-n junction. We examine the theoretical electron-phonon and phonon-phonon scattering rates, the Boltzmann transport of electrons, and the diode equation and hydrodynamic simulations to describe the operation of a pV cell and develop an analytic model predicting its efficiency. Our findings indicate that a pV material with Ep ,O≃Δ Ee ,g≫kBT , where kBT is the thermal energy, and a strong interband electron-phonon coupling surpasses the thermoelectric limit, provided the optical phonon population is excited in a nanoscale cell, enabling the ensuing local nonequilibrium. Finding and tuning a material with these properties is challenging. In Paper II [C. Melnick and M. Kaviany, Phys. Rev. B 93, 125203 (2016), 10.1103/PhysRevB.93.125203], we tune the band gap of graphite within density functional theory through hydrogenation and the application of isotropic strains. The band gap is tuned to resonate with its energetic optical phonon modes and calculate the ab initio electron-phonon and phonon-phonon scattering rates. While hydrogenation degrades the strong electron-phonon coupling in graphene such that the figure of merit vanishes, we outline the methodology for a continued material search.

  3. Analytical Study of 90Sr Betavoltaic Nuclear Battery Performance Based on p-n Junction Silicon

    Science.gov (United States)

    Rahastama, Swastya; Waris, Abdul

    2016-08-01

    Previously, an analytical calculation of 63Ni p-n junction betavoltaic battery has been published. As the basic approach, we reproduced the analytical simulation of 63Ni betavoltaic battery and then compared it to previous results using the same design of the battery. Furthermore, we calculated its maximum power output and radiation- electricity conversion efficiency using semiconductor analysis method.Then, the same method were applied to calculate and analyse the performance of 90Sr betavoltaic battery. The aim of this project is to compare the analytical perfomance results of 90Sr betavoltaic battery to 63Ni betavoltaic battery and the source activity influences to performance. Since it has a higher power density, 90Sr betavoltaic battery yields more power than 63Ni betavoltaic battery but less radiation-electricity conversion efficiency. However, beta particles emitted from 90Sr source could travel further inside the silicon corresponding to stopping range of beta particles, thus the 90Sr betavoltaic battery could be designed thicker than 63Ni betavoltaic battery to achieve higher conversion efficiency.

  4. Gate-tunable diode and photovoltaic effect in an organic-2D layered material p-n junction.

    Science.gov (United States)

    Vélez, Saül; Ciudad, David; Island, Joshua; Buscema, Michele; Txoperena, Oihana; Parui, Subir; Steele, Gary A; Casanova, Fèlix; van der Zant, Herre S J; Castellanos-Gomez, Andres; Hueso, Luis E

    2015-10-07

    The semiconducting p-n junction is a simple device structure with great relevance for electronic and optoelectronic applications. The successful integration of low-dimensional materials in electronic circuits has opened the way forward for producing gate-tunable p-n junctions. In that context, we present here an organic (Cu-phthalocyanine)-2D layered material (MoS2) hybrid p-n junction with both gate-tunable diode characteristics and photovoltaic effect. Our proof-of-principle devices show multifunctional properties with diode rectifying factors of up to 10(4), while under light exposure they exhibit photoresponse with a measured external quantum efficiency of ∼11%. As for their photovoltaic properties, we found open circuit voltages of up to 0.6 V and optical-to-electrical power conversion efficiency of 0.7%. The extended catalogue of known organic semiconductors and two-dimensional materials offer the prospect for tailoring the properties and the performance of the resulting devices, making organic-2D p-n junctions promising candidates for future technological applications.

  5. Formation of a Stable p-n Junction in a Liquid-Gated MoS2 Ambipolar Transistor

    NARCIS (Netherlands)

    Zhang, Y. J.; Ye, J. T.; Yornogida, Y.; Takenobu, T.; Iwasa, Y.

    2013-01-01

    Molybdenum disulfide (MoS2) has gained attention because of its high mobility and circular dichroism. As a crucial step to merge these advantages into a single device, we present a method that electronically controls and locates p-n junctions in liquid-gated ambipolar MoS2 transistors. A bias-indepe

  6. Electrolysis as a controllable method for establishing p-n junctions in multi-nanolayer films of amorphous selenium

    Science.gov (United States)

    John, Joshua D.; Saito, Ichitaro; Ochiai, Jun; Toyama, Ryo; Masuzawa, Tomoaki; Yamada, Takatoshi; Chua, Daniel H. C.; Okano, Ken

    2017-08-01

    We present a controllable way of establishing a p-n junction in amorphous selenium (a-Se) using electrolysis. Amorphous selenium is used as an anode in the electrolysis of NaCl solution. By varying the duration of the electrolysis, we can make the contact to a-Se either Ohmic or rectifying and control the built-in potential and full depletion voltage of the contacts and junctions formed in the a-Se. I-V and C-V measurements show that after electrolysis rectification occurs and that as the duration of electrolysis increases, the direction of rectification changes, with the magnitudes of the built-in potential and the full depletion becoming higher. From the results, we present a model for the electrochemical process of forming the p-n junction and highlight the dependence on the duration of the electrolysis.

  7. Thick layers of PPy and PTh: electrosynthesis and modification of electrical parameters by ion implantation p-n junctions

    Energy Technology Data Exchange (ETDEWEB)

    Lucas, B. (LEPOFI, Fac. des Sciences, 87 - Limoges (France)); Ratier, B. (LEPOFI, Fac. des Sciences, 87 - Limoges (France)); Moliton, A. (LEPOFI, Fac. des Sciences, 87 - Limoges (France)); Moliton, J.P. (LEPOFI, Fac. des Sciences, 87 - Limoges (France)); Otero, T.F. (U.P.V., Fac. de Quimica, Lab. de Electroquimica, San Sebastian (Spain)); Santamaria, C. (U.P.V., Fac. de Quimica, Lab. de Electroquimica, San Sebastian (Spain)); Angulo, E. (U.P.V., Fac. de Quimica, Lab. de Electroquimica, San Sebastian (Spain)); Rodriguez, J. (U.P.V., Fac. de Quimica, Lab. de Electroquimica, San Sebastian (Spain))

    1993-03-22

    Thick layers of polypyrrole and polythiophene (d > 10 [mu]m) were electrogenerated by square or trapezoidal waves of potential. These polymers were electrogenerated on stainless steel, electrochemically reduced, and later translated on a non metal. In the last state the electric characterization is possible without any influence of the conducting electrode. The electrogenerated films have a conductivity of p type, even after a deep electrochemical reduction and were employed to obtain a negative doping by implantation of alkali ions. Measurements of alternating conductivity ([sigma][proportional to]) showed that n doping is efficient. The conductivity [sigma][proportional to] increases with fluence (number of ions deposited on the unit surface). This increase is more efficient when a lower energy of implantation was used, as in the case of other electroactive polymers. From electroreduced polythiophene having a conductivity of 10[sup -6] S.cm[sup -1] and a > 600 [mu]V.K[sup -1] thermoelectric power, a change of sign is obtained for the thermoelectric power after implantation with Cs[sup +] or Na[sup +] ions. A stable p-n junction was constructed and controlled. (orig.)

  8. Electrical characterization of ZnO/NiO p-n junction prepared by the sol-gel method

    Science.gov (United States)

    Merih Akyuzlu, A.; Dagdelen, Fethi; Gultek, Ahmet; Hendi, A. A.; Yakuphanoglu, Fahrettin

    2017-04-01

    ZnO and NiO films were synthesized on fluourine-doped tin oxide (FTO) glass substrate by the sol-gel method. The surface morphology of the films was investigated by atomic force microscopy. The optical band gaps of the ZnO and NiO films were found to be 3.198 and 3.827eV, respectively. A ZnO/NiO p-n junction diode was prepared and electrical charge transport mechanism of the diode was analyzed using thermionic emission and Norde functions. The ideality factor, barrier height and series resistance of the diode were determined to be 6.46, 1.036eV and 39.1 M {Ω} , respectively. The obtained results indicate that ZnO/NiO p-n junction can be used as transparent diode for optic communications.

  9. Auger recombination in heavily doped shallow-emitter silicon p-n-junction solar cells, diodes, and transistors

    Science.gov (United States)

    Shibib, M. A.; Lindholm, F. A.; Fossum, J. G.

    1979-01-01

    A rigorous analytic evaluation of an emitter model that includes Auger recombination but excludes bandgap narrowing is presented. It is shown that such a model cannot explain the experimentally observed values of the open-circuit voltage in p-n-junction silicon solar cells. Thus physical mechanisms in addition to Auger recombination are responsible for the experimentally observed values of the open-circuit voltage in silicon solar cells and the common-emitter current gain in bipolar transistors.

  10. Massless Dirac fermions trapping in a quasi-one-dimensional n p n junction of a continuous graphene monolayer

    Science.gov (United States)

    Bai, Ke-Ke; Qiao, Jia-Bin; Jiang, Hua; Liu, Haiwen; He, Lin

    2017-05-01

    Massless Dirac fermions in graphene provide unprecedented opportunities to realize the Klein paradox, which is one of the most exotic and striking properties of relativistic particles. In the seminal theoretical work [M. I. Katsnelson et al., Nat. Phys. 2, 620 (2006), 10.1038/nphys384], it was predicted that the massless Dirac fermions can pass through one-dimensional (1D) potential barriers unimpededly at normal incidence. Such a result seems to preclude confinement of the massless Dirac fermions in graphene by using 1D potential barriers. Here, we demonstrate both experimentally and theoretically that massless Dirac fermions can be trapped in a quasi-1D n p n junction of a continuous graphene monolayer. Because of highly anisotropic transmission of the massless Dirac fermions at n-p junction boundaries (the so-called Klein tunneling in graphene), charge carriers incident at large oblique angles will be reflected from one edge of the junction with high probability and continue to bounce from the opposite edge. Consequently, these electrons are trapped for a finite time to form quasibound states in the quasi-1D n p n junction. The quasibound states seen as pronounced resonances are probed and the quantum interference patterns arising from these states are directly visualized in our scanning tunneling microscope measurements.

  11. P-N junction and metal contact reliability of SiC diode in high temperature (873 K) environment

    Science.gov (United States)

    Chand, R.; Esashi, M.; Tanaka, S.

    2014-04-01

    This paper reports the high temperature test results of SiC p-n junction diode up to 873 K. No significant change in diode series resistance (Rs) and a diode ideality factor of 1.02 were confirmed in air. We used the 4H-SiC diode which had a contact pad area of 300 μm × 300 μm and a junction area of 220 μm × 220 μm. Ohmic contact on both p and n (i.e. front and back) sides were made by Ni, because nickel silicide (NiSi) provides good ohmic contact for high temperature applications. The electrical contact pads of the SiC diode were made by sputter-depositing Ni or Pt on the NiSi ohmic contact. High temperature aging tests at 673 K, 773 K and 873 K were carried out in air, and the forward current-voltage (I-V) characteristics of the SiC diodes were measured at different time intervals to observe change in the junction and series resistance. Stable p-n junction characteristic and constant series resistance were confirmed for the Pt-metalized diodes at 673 K, 773 K and 873 K. However, the Ni-metallized diodes showed marginal increase in series resistance due to the oxidation of Ni metal contacts.

  12. Nanostructured p-type CZTS thin films prepared by a facile solution process for 3D p-n junction solar cells.

    Science.gov (United States)

    Park, Si-Nae; Sung, Shi-Joon; Sim, Jun-Hyoung; Yang, Kee-Jeong; Hwang, Dae-Kue; Kim, JunHo; Kim, Gee Yeong; Jo, William; Kim, Dae-Hwan; Kang, Jin-Kyu

    2015-07-07

    Nanoporous p-type semiconductor thin films prepared by a simple solution-based process with appropriate thermal treatment and three-dimensional (3D) p-n junction solar cells fabricated by depositing n-type semiconductor layers onto the nanoporous p-type thin films show considerable photovoltaic performance compared with conventional thin film p-n junction solar cells. Spin-coated p-type Cu2ZnSnS4 (CZTS) thin films prepared using metal chlorides and thiourea show unique nanoporous thin film morphology, which is composed of a cluster of CZTS nanograins of 50-500 nm, and the obvious 3D p-n junction structure is fabricated by the deposition of n-type CdS on the nanoporous CZTS thin films by chemical bath deposition. The photovoltaic properties of 3D p-n junction CZTS solar cells are predominantly affected by the scale of CZTS nanograins, which is easily controlled by the sulfurization temperature of CZTS precursor films. The scale of CZTS nanograins determines the minority carrier transportation within the 3D p-n junction between CZTS and CdS, which are closely related with the photocurrent of series resistance of 3D p-n junction solar cells. 3D p-n junction CZTS solar cells with nanograins below 100 nm show power conversion efficiency of 5.02%, which is comparable with conventional CZTS thin film solar cells.

  13. The photoirradiation induced p-n junction in naphthylamine-based organic photovoltaic cells.

    Science.gov (United States)

    Bai, Linyi; Gao, Qiang; Xia, Youyi; Ang, Chung Yen; Bose, Purnandhu; Tan, Si Yu; Zhao, Yanli

    2015-09-21

    The bulk heterojunction (BHJ) plays an indispensable role in organic photovoltaics, and thus has been investigated extensively in recent years. While a p-n heterojunction is usually fabricated using two different donor and acceptor materials such as poly(3-hexylthiophene-2,5-diyl) (P3HT) and phenyl-C61-butyric acid methyl ester (PCBM), it is really rare that such a BHJ is constructed by a single entity. Here, we presented a photoirradiation-induced p-n heterojunction in naphthylamine-based organic photovoltaic cells, where naphthylamine as a typical p-type semiconductor could be oxidized under photoirradiation and transformed into a new semiconductor with the n-type character. The p-n heterojunction was realized using both the remaining naphthylamine and its oxidative product, giving rise to the performance improvement in organic photovoltaic devices. The experimental results show that the power conversion efficiency (PCE) of the devices could be achieved up to 1.79% and 0.43% in solution and thin film processes, respectively. Importantly, this technology using naphthylamine does not require classic P3HT and PCBM to realize the p-n heterojunction, thereby simplifying the device fabrication process. The present approach opens up a promising route for the development of novel materials applicable to the p-n heterojunction.

  14. Four-terminal magneto-transport in graphene p-n junctions created by spatially selective doping.

    Science.gov (United States)

    Lohmann, Timm; von Klitzing, Klaus; Smet, Jurgen H

    2009-05-01

    In this paper, we describe a graphene p-n junction created by chemical doping. We find that chemical doping does not reduce mobility in contrast to top-gating. The preparation technique has been developed from systematic studies about influences on the initial doping of freshly prepared graphene. We investigated the removal of adsorbates by vacuum treatment, annealing, and compensation doping using NH(3). Hysteretic behavior is observed in the electric field effect due to dipolar adsorbates like water and NH(3). Finally we demonstrate spatially selective doping of graphene using patterned PMMA. Four-terminal transport measurements of the p-n devices reveal edge channel mixing in the quantum hall regime. Quantized resistances of h/e(2), h/3e(2) and h/15e(2) can be observed as expected from theory.

  15. Low-cost process for P-N junction-type solar cell

    Energy Technology Data Exchange (ETDEWEB)

    Mooney, J.B.; Cubicciotti, D.D.; Bates, C.W. Jr.

    1980-03-01

    Spray pyrolysis of CuInS/sub 2/ was studied. The concentrations of copper and sulfur in the spray solutions were increased so as to increase the copper content of the films to the stoichiometric level. Although Auger analysis indicates that this was successful, x ray microanalysis has identified the growth of copper-rich crystals on the surfaces of the deposit. Heat treatment in H/sub 2/S did not improve the stoichiometry. The copper-rich crystals were also found on a sample sprayed from a solution with no excess copper. Heterojunctions of glass/SnO/sub 2/(Sb)/CdS/CdTe/carbon(Cu)/Ag-In were prepared with a number of methods used to restrict the junction. The various devices failed to exhibit a diode characteristic or a photo-response. Work on this project is being directed toward understanding the type of junction and how it is formed.

  16. Direct electrical contact of slanted ITO film on axial p-n junction silicon nanowire solar cells.

    Science.gov (United States)

    Lee, Ya-Ju; Yao, Yung-Chi; Yang, Chia-Hao

    2013-01-14

    A novel scheme of direct electrical contact on vertically aligned silicon nanowire (SiNW) axial p-n junction is demonstrated by means of oblique-angle deposition of slanted indium-tin-oxide (ITO) film for photovoltaic applications. The slanted ITO film exhibits an acceptable resistivity of 1.07 x 10⁻³Ω-cm underwent RTA treatment of T = 450°C, and the doping concentration and carrier mobility by Hall measurement amount to 3.7 x 10²⁰ cm⁻³ and 15.8 cm²/V-s, respectively, with an n-type doping polarity. Because of the shadowing effect provided by the SiNWs, the incident ITO vapor-flow is deposited preferentially on the top of SiNWs, which coalesces and eventually forms a nearly continuous film for the subsequent fabrication of grid electrode. Under AM 1.5 G normal illumination, our axial p-n junction SiNW solar cell exhibits an open circuit voltage of VOC = 0.56 V, and a short circuit current of JSC = 1.54 mA/cm² with a fill factor of FF = 30%, resulting in a total power conversion efficiency of PEC = 0.26%.

  17. Junction studies on electrochemically fabricated p-n Cu(2)O homojunction solar cells for efficiency enhancement.

    Science.gov (United States)

    McShane, Colleen M; Choi, Kyoung-Shin

    2012-05-01

    p-n Cu(2)O homojunction solar cells were electrochemically fabricated by consecutively depositing an n-Cu(2)O layer on a p-Cu(2)O layer. In order to better understand the Fermi levels of the electrochemically grown polycrystalline p- and n-Cu(2)O layers and maximize the overall cell performance, the back and front contacts of the Cu(2)O homojunction cells were systematically changed and the I-V characteristics of the resulting cells were examined. The result shows that the intrinsic doping levels of the electrochemically prepared p-Cu(2)O and n-Cu(2)O layers are very low and they made almost Ohmic junctions with Cu metal with which previously studied p-Cu(2)O layers prepared by thermal oxidation of Cu foils are known to form Schottky junctions. The best cell performance (an η of 1.06%, a V(OC) of 0.621 V, an I(SC) of 4.07 mA cm(-2), and a fill factor (ff) of 42%) was obtained when the p-Cu(2)O layer was deposited on a commercially available ITO substrate as the back contact and a sputter deposited ITO layer was used as the front contact on the n-Cu(2)O layer. The unique features of the p-n Cu(2)O homojunction solar cell are discussed in comparison with other Cu(2)O-based heterojunction solar cells.

  18. A simplified boron diffusion for preparing the silicon single crystal p-n junction as an educational device

    Science.gov (United States)

    Shiota, Koki; Kai, Kazuho; Nagaoka, Shiro; Tsuji, Takuto; Wakahara, Akihiro; Rusop, Mohamad

    2016-07-01

    The educational method which is including designing, making, and evaluating actual semiconductor devices with learning the theory is one of the best way to obtain the fundamental understanding of the device physics and to cultivate the ability to make unique ideas using the knowledge in the semiconductor device. In this paper, the simplified Boron thermal diffusion process using Sol-Gel material under normal air environment was proposed based on simple hypothesis and the feasibility of the reproducibility and reliability were investigated to simplify the diffusion process for making the educational devices, such as p-n junction, bipolar and pMOS devices. As the result, this method was successfully achieved making p+ region on the surface of the n-type silicon substrates with good reproducibility. And good rectification property of the p-n junctions was obtained successfully. This result indicates that there is a possibility to apply on the process making pMOS or bipolar transistors. It suggests that there is a variety of the possibility of the applications in the educational field to foster an imagination of new devices.

  19. Forward-bias capacitance and current measurements for determining lifetimes and band narrowing in p-n junction solar cells

    Science.gov (United States)

    Neugroschel, A.; Chen, P. J.; Pao, S. C.; Lindholm, F. A.

    1978-01-01

    A new method is described and illustrated for determining the minority-carrier diffusion length and lifetime in the base region of p-n junction solar cells. The method requires only capacitance measurements at the device terminals and its accuracy is estimated to be + or - 5%. It is applied to a set of silicon p-n junction devices and the values of the diffusion lengths agree with those obtained using the current response to X-ray excitation but disagree with those obtained by the OCVD method. The reasons for the relative inaccuracy of OCVD applied to silicon devices are discussed. The capacitance method includes corrections for a two-dimensional fringing effects which occur in small area devices. For a device having highly-doped base region and surface (emitter) layer, the method can be extended to enable the determination of material properties of the degenerately doped surface layer. These material properties include the phenomenological emitter lifetime and a measure of the energy band-gap narrowing in the emitter. An alternate method for determining the energy band-gap narrowing from temperature dependence of emitter current is discussed and demonstrated.

  20. Applications of nanosecond laser annealing to fabricating p-n homo junction on ZnO nanorods

    Science.gov (United States)

    Shimogaki, T.; Ofuji, T.; Tetsuyama, N.; Okazaki, K.; Higashihata, M.; Nakamura, D.; Ikenoue, H.; Asano, T.; Okada, T.

    2013-03-01

    Zinc oxide (ZnO) has attracted considerable attension due to its wide applications in particular ultra violet light emitting diode (UV-LED). In addition, the one-dimensional ZnO crystals are quite attractive as building blocks for light emitting devices like laser and LED, because of their high crystallinity and light confinement properties. However, a method for the realization of the stable p-type ZnO has not been well established. In our study, we have investigated the effect of the nanosecond laser irradiation to the ZnO nanorods as an ultrafast melting and recrystallizing process for realization of the p-type ZnO. Fabrication of the p-n homo junction along ZnO nanorods has been demonstrated using phosphorus ion implantation and ns-laser annealing by a KrF excimer laser. Rectifying I-V characteristics attributed to p-n junction were observed from the measurement of electrical properties. In addition, the penetration depth of laser annealed layer was measured by observing cathode luminescence images. Then, it was turned out that high repetition rate laser annealing can anneal ZnO nanorods over the optical-absorption length. In this report, optical, structural, and electrical characteristics of the phosphorus ion-implanted ZnO nanorods annealed by the KrF excimer laser are discussed.

  1. High photoresponsivity in an all-graphene p-n vertical junction photodetector.

    Science.gov (United States)

    Kim, Chang Oh; Kim, Sung; Shin, Dong Hee; Kang, Soo Seok; Kim, Jong Min; Jang, Chan Wook; Joo, Soong Sin; Lee, Jae Sung; Kim, Ju Hwan; Choi, Suk-Ho; Hwang, Euyheon

    2014-01-01

    Intensive studies have recently been performed on graphene-based photodetectors, but most of them are based on field effect transistor structures containing mechanically exfoliated graphene, not suitable for practical large-scale device applications. Here we report high-efficient photodetector behaviours of chemical vapor deposition grown all-graphene p-n vertical-type tunnelling diodes. The observed photodetector characteristics well follow what are expected from its band structure and the tunnelling of current through the interlayer between the metallic p- and n-graphene layers. High detectivity (~10(12) cm Hz(1/2) W(-1)) and responsivity (0.4~1.0 A W(-1)) are achieved in the broad spectral range from ultraviolet to near-infrared and the photoresponse is almost consistent under 6-month operations. The high photodetector performance of the graphene p-n vertical diodes can be understood by the high photocurrent gain and the carrier multiplication arising from impact ionization in graphene.

  2. Design and Simulation of InGaN p-n Junction Solar Cell

    Directory of Open Access Journals (Sweden)

    A. Mesrane

    2015-01-01

    Full Text Available The tunability of the InGaN band gap energy over a wide range provides a good spectral match to sunlight, making it a suitable material for photovoltaic solar cells. The main objective of this work is to design and simulate the optimal InGaN single-junction solar cell. For more accurate results and best configuration, the optical properties and the physical models such as the Fermi-Dirac statistics, Auger and Shockley-Read-Hall recombination, and the doping and temperature-dependent mobility model were taken into account in simulations. The single-junction In0.622Ga0.378N (Eg = 1.39 eV solar cell is the optimal structure found. It exhibits, under normalized conditions (AM1.5G, 0.1 W/cm2, and 300 K, the following electrical parameters: Jsc=32.6791 mA/cm2, Voc=0.94091 volts, FF = 86.2343%, and η=26.5056%. It was noticed that the minority carrier lifetime and the surface recombination velocity have an important effect on the solar cell performance. Furthermore, the investigation results show that the In0.622Ga0.378N solar cell efficiency was inversely proportional with the temperature.

  3. Photovoltaic Response from Multilayered Transition Metal Dichalcogenides p-n Junctions

    Science.gov (United States)

    Memaran, Shahriar; Pradhan, Nihar; Lu, Zhengguang; Rhodes, Daniel; Ludwig, Jonathan; Zhou, Qiong; Ogunsolu, Omotola; Ajayan, Pulickel; Smirnov, Dmitry; Fernandez-Dominguez, Antonio; Garcia-Vidal, Francisco; Balicas, Luis

    Transition metal dichalcogenides (TMDs) are layered semiconductors with indirect band gaps comparable to Si. These compounds can be grown in large area, while their gap(s) can be tuned by changing their chemical composition or by applying a gate voltage. The experimental evidence collected so far points toward a strong interaction with light, which contrasts with the small photovoltaic efficiencies η stacked onto the dielectric h-BN. In addition to ideal diode-like response, we find that these junctions can yield, under AM-1.5 illumination, photovoltaic efficiencies η exceeding 14%, with fill factors of ~ 70 % . Given the available strategies for increasing η such as gap tuning, improving the quality of the electrical contacts, or the fabrication of tandem cells, our study suggests a remarkable potential for photovoltaic applications based on TMDs.

  4. Visible electroluminescence from p-n junction porous Si diode with a polyaniline film contact

    Institute of Scientific and Technical Information of China (English)

    Hongjian Li (李宏建); Baiyun Huang (黄伯云); Danqing Yi (易丹青); Haoyang Gui (崔昊杨); Jingcui Peng (彭景翠)

    2003-01-01

    We have fabricated a light emitting diode using a p-type conducting polyaniline layer deposited on a n-type porous silicon (PS) layer. The contact formed between a p-type conducting polyaniline layer and a n-type PS wafer has rectified behaviour demonstrated clearly by the I-V curves. The series resistance Rs in the p-type conducting polyaniline/n-PS diode is reduced greatly and has a lower onset voltage compared with ITO/n-PS diode. The PS has an orange photoluminescence (PL) band after coating with polyaniline.Visible electroluminescence (EL) has been obtained from this junction when a forward bias is applied. The emission band is very broad extending from 600 - 803 nm with a peak at 690 nm.

  5. The Pedagogy of the p-n Junction: Diffusion or Drift?

    CERN Document Server

    Kasap, S O

    2003-01-01

    The majority of current textbooks on device physics at the undergraduate level derive the diode equation based on the diffusion of injected minority carriers. Generally the drift of the majority carriers, or the extent of drift, is not discussed and the importance of drift in the presence of a field in the neutral regions is almost totally ignored. The assumptions of zero field in the neutral regions and conduction by minority carrier diffusion lead to a number of pedagogical problems and paradoxes for the student. The purpose of this paper is to address the pedagogical problems and paradoxes apparent in the current treatment of conduction in the pn junction as it appears in the majority of texts.

  6. Inductively Coupled Plasma-Induced Etch Damage of GaN p-n Junctions

    Energy Technology Data Exchange (ETDEWEB)

    SHUL,RANDY J.; ZHANG,LEI; BACA,ALBERT G.; WILLISON,CHRISTI LEE; HAN,JUNG; PEARTON,S.J.; REN,F.

    1999-11-03

    Plasma-induced etch damage can degrade the electrical and optical performance of III-V nitride electronic and photonic devices. We have investigated the etch-induced damage of an Inductively Coupled Plasma (ICP) etch system on the electrical performance of mesa-isolated GaN pn-junction diodes. GaN p-i-n mesa diodes were formed by Cl{sub 2}/BCl{sub 3}/Ar ICP etching under different plasma conditions. The reverse leakage current in the mesa diodes showed a strong relationship to chamber pressure, ion energy, and plasma flux. Plasma induced damage was minimized at moderate flux conditions ({le} 500 W), pressures {ge}2 mTorr, and at ion energies below approximately -275 V.

  7. The importance of surface recombination and energy-bandgap narrowing in p-n-junction silicon solar cells

    Science.gov (United States)

    Fossum, J. G.; Lindholm, F. A.; Shibib, M. A.

    1979-01-01

    Experimental data demonstrating the sensitivity of open-circuit voltage to front-surface conditions are presented for a variety of p-n-junction silicon solar cells. Analytical models accounting for the data are defined and supported by additional experiments. The models and the data imply that a) surface recombination significantly limits the open-circuit voltage (and the short-circuit current) of typical silicon cells, and b) energy-bandgap narrowing is important in the manifestation of these limitations. The models suggest modifications in both the structural design and the fabrication processing of the cells that would result in substantial improvements in cell performance. The benefits of one such modification - the addition of a thin thermal silicon-dioxide layer on the front surface - are indicated experimentally.

  8. Efficiently Harvesting Sun Light for Silicon Solar Cells through Advanced Optical Couplers and A Radial p-n Junction Structure

    Directory of Open Access Journals (Sweden)

    Hsin-Cheng Lee

    2010-04-01

    Full Text Available Silicon-based solar cells (SCs promise to be an alternative energy source mainly due to: (1 a high efficiency-to-cost ratio, (2 the absence of environmental-degradation issues, and (3 great reliability. Transition from wafer-based to thin-film SC significantly reduces the cost of SCs, including the cost from the material itself and the fabrication process. However, as the thickness of the absorption (or the active layer decreases, the energy-conversion efficiency drops dramatically. As a consequence, we discuss here three techniques to increase the efficiency of silicon-based SCs: (1 photonic crystal (PC optical couplers and (2 plasmonic optical couplers to increase efficiency of light absorption in the SCs, and (3 a radial p-n junction structure, decomposing light absorption and diffusion path into two orthogonal directions. The detailed mechanisms and recent research progress regarding these techniques are discussed in this review article.

  9. Sb{sub 2}S{sub 3}:C/CdS p-n junction by laser irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Arato, A. [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, San Nicolas de los Garza, Nuevo Leon (Mexico); Centro de Innovacion, Investigacion y Desarrollo en Ingenieria y Tecnologia-Universidad Autonoma de Nuevo Leon, Apodaca, Nuevo Leon (Mexico); Cardenas, E. [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, San Nicolas de los Garza, Nuevo Leon (Mexico); Shaji, S. [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, San Nicolas de los Garza, Nuevo Leon (Mexico); Centro de Innovacion, Investigacion y Desarrollo en Ingenieria y Tecnologia-Universidad Autonoma de Nuevo Leon, Apodaca, Nuevo Leon (Mexico); O' Brien, J.J.; Liu, J. [Center for Nanoscience, University of Missouri-St. Louis, One University Boulevard, St. Louis, Missouri-63121 (United States); Department of Chemistry and Biochemistry, University of Missouri-St. Louis, One University Boulevard, St. Louis, Missouri-63121 (United States); Castillo, G. Alan; Das Roy, T.K. [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, San Nicolas de los Garza, Nuevo Leon (Mexico); Krishnan, B. [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, San Nicolas de los Garza, Nuevo Leon (Mexico); Centro de Innovacion, Investigacion y Desarrollo en Ingenieria y Tecnologia-Universidad Autonoma de Nuevo Leon, Apodaca, Nuevo Leon (Mexico)], E-mail: bkrishnan@fime.uanl.mx

    2009-02-02

    In this paper, we report laser irradiated carbon doping of Sb{sub 2}S{sub 3} thin films and formation of a p-n junction photovoltaic structure using these films. A very thin carbon layer was evaporated on to chemical bath deposited Sb{sub 2}S{sub 3} thin films of approximately 0.5 {mu}m in thickness. Sb{sub 2}S{sub 3} thin films were prepared from a solution containing SbCl{sub 3} and Na{sub 2}S{sub 2}O{sub 3} at 27 deg. C for 5 h and the films obtained were highly resistive. These C/Sb{sub 2}S{sub 3} thin films were irradiated by an expanded laser beam of diameter approximately 0.5 cm (5 W power, 532 nm Verdi laser), for 2 min at ambient atmosphere. Morphology and composition of these films were analyzed. These films showed p-type conductivity due to carbon diffusion (Sb{sub 2} S{sub 3}:C) by the thermal energy generated by the absorption of laser radiation. In addition, these thin films were incorporated in a photovoltaic structure Ag/Sb{sub 2}S{sub 3}:C/CdS/ITO/Glass. For this, CdS thin film of 50 nm in thickness was deposited on a commercially available ITO coated glass substrate from a chemical bath containing CdCl{sub 2}, sodium citrate, NH{sub 4}OH and thiourea at 70 deg. C . On the CdS film, Sb{sub 2}S{sub 3}/C layers were deposited. This multilayer structure was subjected to the laser irradiation, C/Sb{sub 2}S{sub 3} side facing the beam. The p-n junction formed by p-Sb{sub 2}S{sub 3}:C and n-type CdS showed V{sub oc} = 500 mV and J{sub sc} = 0.5 mA/cm{sup 2} under illumination by a tungsten halogen lamp. This work opens up a new method to produce solar cell structures by laser assisted material processing.

  10. Vertical current-flow enhancement via fabrication of GaN nanorod p-n junction diode on graphene

    Science.gov (United States)

    Ryu, Sung Ryong; Ram, S. D. Gopal; Lee, Seung Joo; Cho, Hak-dong; Lee, Sejoon; Kang, Tae Won; Kwon, Sangwoo; Yang, Woochul; Shin, Sunhye; Woo, Yongdeuk

    2015-08-01

    Mg doped GaN nanorods were grown on undoped n-type GaN nanorods uniaxial on monolayer graphene by hydride vapor phase epitaxy (HVPE) method. The monolayer graphene used as the bottom electrode and a substrate as well provides good electrical contact, acts as a current spreading layer, well suitable for the growth of hexagonal GaN nanorod. In addition it has a work function suitable to that of n-GaN. The formed p-n nanorods show a Schottky behavior with a turn on voltage of 3 V. Using graphene as the substrate, the resistance of the nanorod is reduced by 700 times when compared with the case without using graphene as the current spreading layer. The low resistance of graphene acts in parallel with the resistance of the GaN buffer layer, and reduces the resistance drastically. The formed p-n junction in a single GaN nanorod is visualized by Kelvin Force Probe Microscopy (KPFM) to have distinctively contrast p and n regions. The measured contact potential difference of p-and n-region has a difference of 103 mV which well confirms the formed regions are electronically different. Low temperature photoluminescence (PL) spectra give evidence of dopant related acceptor bound emission at 3.2 eV different from 3.4 eV of undoped GaN. The crystalline structure, compositional purity is confirmed by X-ray diffraction (XRD), Transmission and Scanning electron microcopies (SEM), (TEM), Energy dispersive analysis by X-ray (EDAX) and X-ray photoelectron spectroscopy (XPS) as well.

  11. Simulating and modeling the breakdown voltage in a semi-insulating GaAs P+N junction diode

    Science.gov (United States)

    Resfa, A.; Menezla, Brahimi. R.; Benchhima, M.

    2014-08-01

    This work aims to determine the characteristic I (breakdown voltage) of the inverse current in a GaAs PN junction diode, subject to a reverse polarization, while specifying the parameters that influence the breakdown voltage of the diode. In this work, we simulated the behavior of the ionization phenomenon by impact breakdown by avalanche of the PN junctions, subject to an inverse polarization. We will take into account both the trapping model in a stationary regime in the P+N structure using like material of basis the III-V compounds and mainly the GaAs semi-insulating in which the deep centers have in important densities. We are talking about the model of trapping in the space charge region (SCR) and that is the trap density donor and acceptor states. The carrier crossing the space charge region (SCR) of W thickness creates N electron—hole pairs: for every created pair, the electron and the hole are swept quickly by the electric field, each in an opposite direction, which comes back, according to an already accepted reasoning, to the crossing of the space charge region (SCR) by an electron or a hole. So the even N pair created by the initial particle provoke N2 ionizations and so forth. The study of the physical and electrical behaviour of semiconductors is based on the influence of the presence of deep centers on the characteristic I(V) current-tension, which requires the calculation of the electrostatic potential, the electric field, the integral of ionization, the density of the states traps, the diffusion current of minority in the regions (1) and (3), the current thermal generation in the region (2), the leakage current in the surface, and the breakdown voltage.

  12. Single Atomically Sharp Lateral Monolayer p-n Heterojunction Solar Cells with Extraordinarily High Power Conversion Efficiency

    KAUST Repository

    Tsai, Meng-Lin

    2017-06-26

    The recent development of 2D monolayer lateral semiconductor has created new paradigm to develop p-n heterojunctions. Albeit, the growth methods of these heterostructures typically result in alloy structures at the interface, limiting the development for high-efficiency photovoltaic (PV) devices. Here, the PV properties of sequentially grown alloy-free 2D monolayer WSe-MoS lateral p-n heterojunction are explores. The PV devices show an extraordinary power conversion efficiency of 2.56% under AM 1.5G illumination. The large surface active area enables the full exposure of the depletion region, leading to excellent omnidirectional light harvesting characteristic with only 5% reduction of efficiency at incident angles up to 75°. Modeling studies demonstrate the PV devices comply with typical principles, increasing the feasibility for further development. Furthermore, the appropriate electrode-spacing design can lead to environment-independent PV properties. These robust PV properties deriving from the atomically sharp lateral p-n interface can help develop the next-generation photovoltaics.

  13. Self-assembled molecular p/n junctions for applications in dye-sensitized solar energy conversion.

    Science.gov (United States)

    Farnum, Byron H; Wee, Kyung-Ryang; Meyer, Thomas J

    2016-09-01

    The achievement of long-lived photoinduced redox separation lifetimes has long been a central goal of molecular-based solar energy conversion strategies. The longer the redox-separation lifetime, the more time available for useful work to be extracted from the absorbed photon energy. Here we describe a novel strategy for dye-sensitized solar energy applications in which redox-separated lifetimes on the order of milliseconds to seconds can be achieved based on a simple toolkit of molecular components. Specifically, molecular chromophores (C), electron acceptors (A) and electron donors (D) were self-assembled on the surfaces of mesoporous, transparent conducting indium tin oxide nanoparticle (nanoITO) electrodes to prepare both photoanode (nanoITO|-A-C-D) and photocathode (nanoITO|-D-C-A) assemblies. Nanosecond transient-absorption and steady-state photolysis measurements show that the electrodes function microscopically as molecular analogues of semiconductor p/n junctions. These results point to a new chemical strategy for dye-sensitized solar energy conversion based on molecular excited states and electron acceptors/donors on the surfaces of transparent conducting oxide nanoparticle electrodes.

  14. Hidden symmetry and enhanced Rudermann-Kittel-Kasuya-Yosida interaction in P-N junctions of two-dimensional materials

    Science.gov (United States)

    Yang, Wen; Zhang, Shuhui; Zhu, Jiaji; Chang, Kai

    Correlation between magnetic atoms (spins) in non-magnetic two-dimensional (2D) systems and materials is one of the central issues in condensed matter physics. Engineering this correlation relies heavily on the carrier-mediated Rudermann-Kittel- Kasuya-Yosida (RKKY) interaction. However, tailoring and direct detection of spin-spin correlation has been limited to spins separated by a few nanometers due to the rapid 1 /R2 decay of RKKY interaction with inter-spin distance R. Here we reveal a hidden symmetry - absent from the Hamiltonian - in planar P-N junctions, which could qualitatively change the spatial scaling of various response functions in a wide range of 2D systems and materials. In particular, it allows RKKY interaction to attain 1 / R decay, the slowest decay in extended systems. This dramatically enhances RKKY interaction and enables long-range correlation between distant spins, with applications in nanoscale magnetism, spintronics, and solid-state quantum computation. This work was supported by the MOST (Grant No. 2015CB921503, and No. 2014CB848700) and NSFC (Grant No. 11434010, No. 11274036, No. 11322542, and No. 11404043).

  15. Optimizing performance of silicon-based p-n junction photodetectors by the piezo-phototronic effect.

    Science.gov (United States)

    Wang, Zhaona; Yu, Ruomeng; Wen, Xiaonan; Liu, Ying; Pan, Caofeng; Wu, Wenzhuo; Wang, Zhong Lin

    2014-12-23

    Silicon-based p-n junction photodetectors (PDs) play an essential role in optoelectronic applications for photosensing due to their outstanding compatibility with well-developed integrated circuit technology. The piezo-phototronic effect, a three-way coupling effect among semiconductor properties, piezoelectric polarizations, and photon excitation, has been demonstrated as an effective approach to tune/modulate the generation, separation, and recombination of photogenerated electron-hole pairs during optoelectronic processes in piezoelectric-semiconductor materials. Here, we utilize the strain-induced piezo-polarization charges in a piezoelectric n-ZnO layer to modulate the optoelectronic process initiated in a p-Si layer and thus optimize the performances of p-Si/ZnO NWs hybridized photodetectors for visible sensing via tuning the transport property of charge carriers across the Si/ZnO heterojunction interface. The maximum photoresponsivity R of 7.1 A/W and fastest rising time of 101 ms were obtained from these PDs when applying an external compressive strain of -0.10‰ on the ZnO NWs, corresponding to relative enhancement of 177% in R and shortening to 87% in response time, respectively. These results indicate a promising method to enhance/optimize the performances of non-piezoelectric semiconductor material (e.g., Si) based optoelectronic devices by the piezo-phototronic effect.

  16. Colossal Magnetoresistive p-n Junctions of Te-Doped LaMnO3/Nb-doped SrTiO3

    Institute of Scientific and Technical Information of China (English)

    Lü Hui-Bin; YANG Guo-Zhen; DAI Shou-Yu; CHEN Zheng-Hao; LIU Li-feng; GUO Hai-Zhong; XIANG Wen-Feng; FEI Yi-Yan; HE Meng; ZHOU Yue-Liang

    2003-01-01

    We have fabricated colossal magnetoresistive (CMR) p-n junctions made of Te-doped LaMnOs and Nb-doped SrTiOa with laser molecular beam epitaxy. The I - V characteristics of the Lao.aTeo.iMnOs/SrNfao.oiTio.ggOs p-n junctions as a function of applied magnetic field (0-5 T) were experimentally studied in the temperature range 77-300 K. The results indicate that the p-n junction exhibited the CMR behaviour. The magnetoresistance (MR) is positive at 220 K and 300 K, while it displays a negative MR at 77K. For a positive bias, the MR ratios (&.R/RO, Afl = RH - Ro) are 7.5% at 0.1 T and 18% at 5T for 300K, 5% at 0.1 T and 33% at 5T for 220K, -14% at 0.1 T and -71% at 5 T for 77K. For a negative bias, the MR ratios are 6.3% at 0.1 T and 10.8% at 3T for 300K, 5.1% at 0.1 T and 15% at 3T for 220K, -19% at 0.1 T and -72% at 5 T for 77K. The CMR behaviour of the p-n junction is different from those of the LaMnOa compound family.

  17. The effect of dephasing on edge state transport through p-n junctions in HgTe/CdTe quantum wells.

    Science.gov (United States)

    Zhang, Ying-Tao; Song, Juntao; Sun, Qing-Feng

    2014-02-26

    Using the Landauer-Büttiker formula, we study the effect of dephasing on the transport properties of the HgTe/CdTe p-n junction. It is found that in the HgTe/CdTe p-n junction the topologically protected gapless helical edge states manifest a quantized 2e²/h plateau robust against dephasing, in sharp contrast to the case for the normal HgTe/CdTe quantum well. This robustness of the transport properties of the edge states against dephasing should be attributed to the special construction of the HgTe/CdTe p-n junction, which limits the gapless helical edge states to a very narrow region and thus weakens the influence of the dephasing on the gapless edge states to a large extent. Our results demonstrate that the p-n junction could be a substitute device for use in experimentally observing the robust edge states and quantized plateau. Finally, we present a feasible scheme based on current experimental methods.

  18. High-voltage (900 V) 4 H-SiC Schottky diodes with a boron-implanted guard p-n junction

    Energy Technology Data Exchange (ETDEWEB)

    Grekhov, I. V.; Ivanov, P. A., E-mail: Pavel.Ivanov@mail.ioffe.ru; Il' inskaya, N. D.; Kon' kov, O. I.; Potapov, A. S.; Samsonova, T. P. [Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation)

    2008-02-15

    High-voltage (900 V) 4H-SiC Schottky diodes terminated with a guard p-n junction were fabricated and studied. The guard p-n junction was formed by room-temperature boron implantation with subsequent high-temperature annealing. Due to transient enhanced boron diffusion during annealing, the depth of the guard p-n junction was equal to about 1.7 {mu}m, which is larger by approximately 1 {mu}m than the projected range of 11 B ions in 4H-SiC. The maximum reverse voltage of fabricated 4H-SiC Schottky diodes is found to be limited by avalanche breakdown of the planar p-n junction; the value of the breakdown voltage (910 V) is close to theoretical estimate in the case of the impurity concentration N = 2.5 Multiplication-Sign 10{sup 15} cm{sup -3} in the n-type layer, thickness of the n-type layer d = 12.5 {mu}m, and depth of the p-n junction r{sub j} = 1.7 {mu}m. The on-state diode resistance (3.7 m{Omega} cm{sup 2}) is controlled by the resistance of the epitaxial n-type layer. The recovery charge of about 1.3 nC is equal to the charge of majority charge carriers that are swept out of an epitaxial n-type layer under the effect of a reverse voltage.

  19. The effect of built-in drift field and emitter recombinations on FCVD of a p- n junction diode

    Science.gov (United States)

    Jain, S. C.; Ray, U. C.

    1983-06-01

    This paper discusses the Forward Current induced open circuit Voltage Decay (FCVD) of a p- n junction diode including the effects of recombinations in the emitter as well as the built-in drift fields in the base and in the emitter. The analysis is based on the quasi-static approximation (QSA) of the carrier profiles in the emitter. It is shown that the emitter effects on FCVD is completely determined by JEO, the dark saturation current in the emitter. The value of JEO in general, depends on the heavy doping effects in the emitter, the drift field in the emitter, emitter thickness and surface recombination velocity at the emitter surface. It is shown that for a diode with retarding drift field in the base, emitter recombinations play a very significant role in FCVD. The decay time constant for large values of time in this case is given by τ eff = τ B/[1 + ƒ B2 - (a - ƒ B) 2], where a = J EO/J BO, ƒ B is the drift field parameter in the base. The higher value of a, the faster is the voltage decay. For accelerating fields in the base, the time constant for large values of time is independent of emitter recombinations and is given by τ eff = τ B/(1 + ƒ B2) . However, the decay rate for small values of time is strongly affected by emitter recombinations for both types of the field; the higher the emitter recombinations, the faster is the initial rate of the voltage decay. For extremely strong drift fields in the base, QSA in the emitter is not valid. The coupled continuity equations are solved with the conditions ƒ B2 ≫ τ B/τ E and an analytic expression for FCVD is derived. It is seen that FCVD for strong base fields is determined solely by emitter lifetime τE except for small values of time of the order of a few τE.

  20. Magnetotransport effects in lateral and vertical ferromagnetic semiconductor junctions

    OpenAIRE

    Rüster, Christian

    2005-01-01

    This work is an investigation of giant magnetoresistance (GMR), tunneling magnetoresistance (TMR) and tunneling anisotropic magnetoresistance (TAMR)effects in (Ga,Mn) based ferromagnetic semiconductor junctions. Detailed results are published in the following articles: [1] C. Rüster, T. Borzenko, C. Gould, G. Schmidt, L.W. Molenkamp, X. Liu, T.J.Wojtowicz, J.K. Furdyna, Z.G. Yu and M. Flatt´e, Very Large Magnetoresistance in Lateral Ferromagnetic (Ga,Mn)As Wires with Nanoconstrictions, Physic...

  1. Tuning of optical and electrical properties of wide band gap Fe:SnO2/Li:NiO p- n junctions using 80 MeV oxygen ion beam

    Science.gov (United States)

    Mistry, Bhaumik V.; Avasthi, D. K.; Joshi, U. S.

    2016-12-01

    Electrical and optical properties of pristine and swift heavy ion (SHI) irradiated p- n junction diode have been investigated for advanced electronics application. Fe:SnO2/Li:NiO p- n junction was fabricated by using pulsed laser deposition on c-sapphire substrate. The optical band gaps of Fe:SnO2 and Li:NiO films were obtained to be 3.88 and 3.37 eV, respectively. The current-voltage characteristics of the oxide-based p- n junction showed a rectifying behaviour with turn-on voltage of 0.95 V. The oxide-based p- n junction diode was irradiated to 80 MeV O+6 ions with 1 × 1012 ions/cm2 fluence. Decrease in grain size due to SHI irradiation is confirmed by the grazing angle X-ray diffraction and atomic force microscopy. In comparison with the pristine p- n junction diode, O+6 ion irradiated p-n junction diode shows the increase of surface roughness and decrease of percentage transmittance in visible region. For irradiated p- n junction diode, current-voltage curve has still rectifying behaviour but exhibits lower turn-on voltage than that of virgin p- n junction diode.

  2. Hybrid p-type ZnO film and n-type ZnO nanorod p-n homo-junction for efficient photovoltaic applications

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Jong Hyun; Lee, Jun Seok; Lee, Sang Hyo; Nam, Hye Won [Novel Functional Materials and Device Lab, Department of Physics, Hanyang University, Seoul 133-791 (Korea, Republic of); Hong, Jin Pyo, E-mail: jphong@hanyang.ac.k [Novel Functional Materials and Device Lab, Department of Physics, Hanyang University, Seoul 133-791 (Korea, Republic of); Cha, Seoung Nam; Park, Young Jun; Kim, Jong Min [Samsung Advanced Institute of Technology, P.O. Box 11, 1 Suwon 440-600 (Korea, Republic of)

    2010-09-01

    Simple hybrid p-n homo-junctions using p-type ZnO thin films and n-type nanorods grown on fluorine tin oxide (FTO) substrates for photovoltaic applications are described. The ZnO nanorods (1.5 {mu}m) were synthesized via an aqueous solution method with zinc nitrate hexahydrate and hexamethylenetetramine on ZnO seed layers. The 10-nm-thick ZnO seed layers showed n-type conductivity on FTO substrates and were deposited with a sputtering-based method. After synthesizing ZnO nanorods, aluminum-nitride co-doped p-type ZnO films (200 nm) were efficiently grown using pre-activated nitrogen (N) plasma sources with an inductively-coupled dual-target co-sputtering system. The structural and electrical properties of hybrid p-n homo-junctions were investigated by scanning electron microscopy, transmittance spectrophotometry, and I-V measurements.

  3. Experimental evidence of deep electron and hole trapping levels in high fluence proton irradiated p-n Si junctions using optical charging spectroscopy

    CERN Document Server

    Pintilie, I; Botila, T; Petre, D

    2000-01-01

    Optical charging spectroscopy (OCS) is first time reported as applied to p-n junctions. The existence of one deep trapping level for electrons and two deep trapping levels for holes was put into evidence, using this method, in proton irradiated p/sup +/-n-n/sup +/ silicon structures. An analytical formula for the OCS discharging current for this type of structures was deduced. (19 refs).

  4. Improved electrical properties of n-n and p-n Si/SiC junctions with thermal annealing treatment

    Science.gov (United States)

    Liang, J.; Nishida, S.; Arai, M.; Shigekawa, N.

    2016-07-01

    The effects of annealing process on the electrical properties of n+-Si/n-SiC and p+-Si/n-SiC junctions fabricated by using surface-activated bonding are investigated. It is found by measuring the current-voltage (I-V) characteristics of n+-Si/n-SiC junctions that the reverse-bias current and the ideality factor decreased to 2.0 × 10-5 mA/cm2 and 1.10, respectively, after the junctions annealing at 700 °C. The flat band voltages of n+-Si/n-SiC and p+-Si/n-SiC junctions obtained from capacitance-voltage (C-V) measurements decreased with increasing annealing temperature. Furthermore, their flat band voltages are very close to each other irrespective of the annealing temperature change, which suggests that the Fermi level is still pinned at the bonding interface even for the junctions annealing at high temperature and the interface state density causing Fermi level pinning varies with the junctions annealing. The reverse characteristics of n+-Si/n-SiC junctions are in good agreement with the calculations based on thermionic field emission. In addition, the calculated donor concentration of 4H-SiC epi-layers and flat band voltage is consistent with the values obtained from C-V measurements.

  5. UV and visible light synergetic photodegradation using rutile TiO2 nanorod arrays based on a p-n Junction.

    Science.gov (United States)

    Ji, Tao; Cui, Ze; Zhang, Wenlong; Cao, Yunjiu; Zhang, Yongfang; He, Shu-Ang; Xu, Mingdong; Sun, Yangang; Zou, Rujia; Hu, Junqing

    2017-03-27

    Herein, we report a photocatalytic heterojunction device of rutile TiO2 nanorod arrays based on a p-n silicon junction (TiO2@PN) and its full absorption of ultraviolet and visible light for synergistic photodegradation. The fabricated TiO2@PN had excellent photocatalytic degradation of methyl orange (MO) under irradiation of a 300 W Xe lamp, and its pseudo-first-order rate constant k was 0.221 h(-1), which was greatly higher than that for TiO2 nanorod arrays based on an n-p silicon junction (TiO2@NP, 0.078 h(-1)) and glass (TiO2@G, 0.032 h(-1)). The higher photocatalytic performance of TiO2@PN could be attributed to the fact that the photovoltage (PV) of the p-n junction promotes separation of the electron-hole pairs of the TiO2, and the holes are thus left within the TiO2 nanorods to produce a strong oxidant of hydroxyl radicals (˙OH). Moreover, this heterojunction device could be easily fabricated in a large size for easy recovery and recycling, which shows its promise in the solar-driven degradation of environmental pollution.

  6. Nanoscale insight into the p-n junction of alkali-incorporated Cu(In,Ga)Se 2 solar cells: P-N junction of alkali-incorporated Cu(In,Ga)Se 2 solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Stokes, Adam [National Renewable Energy Laboratory, National Center for Photovoltaics, 15013 Denver W Pkwy Golden CO USA; Colorado School of Mines, 1600 Illinois St Golden CO 80401 USA; Al-Jassim, Mowafak [National Renewable Energy Laboratory, National Center for Photovoltaics, 15013 Denver W Pkwy Golden CO USA; Norman, Andrew [National Renewable Energy Laboratory, National Center for Photovoltaics, 15013 Denver W Pkwy Golden CO USA; Diercks, David [Colorado School of Mines, 1600 Illinois St Golden CO 80401 USA; Gorman, Brian [Colorado School of Mines, 1600 Illinois St Golden CO 80401 USA

    2017-04-05

    The effects of alkali diffusion and post-deposition treatment in three-stage processed Cu(In,Ga)Se2 solar cells are examined by using atom probe tomography and electrical property measurements. Cells, for which the substrate was treated at 650 degrees C to induce alkali diffusion from the substrate prior to absorber deposition, exhibited high open-circuit voltage (758 mV) and efficiency (18.2%) and also exhibited a 50 to 100-nm-thick ordered vacancy compound layer at the metallurgical junction. Surprisingly, these high-temperature samples exhibited higher concentrations of K at the junction (1.8 at.%) than post-deposition treatment samples (0.4 at.%). A model that uses Ga/(Ga + In) and Cu/(Ga + In) profiles to predict bandgaps (+/-17.9 meV) of 22 Cu(In,Ga)Se2 solar cells reported in literature was discussed and ultimately used to predict band properties at the nanoscale by using atom probe tomography data. The high-temperature samples exhibited a greater drop in the valence band maximum (200 meV) due to a lower Cu/(Ga + In) ratio than the post-deposition treatment samples. There was an anticorrelation of K concentrations and Cu/(Ga + In) ratios for all samples, regardless of processing conditions. Changes in elemental profiles at the active junctions correlate well with the electrical behaviour of these devices.

  7. Summary of theoretical and experimental investigation of grating type, silicon photovoltaic cells. [using p-n junctions on light receiving surface of base crystal

    Science.gov (United States)

    Chen, L. Y.; Loferski, J. J.

    1975-01-01

    Theoretical and experimental aspects are summarized for single crystal, silicon photovoltaic devices made by forming a grating pattern of p/n junctions on the light receiving surface of the base crystal. Based on the general semiconductor equations, a mathematical description is presented for the photovoltaic properties of such grating-like structures in a two dimensional form. The resulting second order elliptical equation is solved by computer modeling to give solutions for various, reasonable, initial values of bulk resistivity, excess carrier concentration, and surface recombination velocity. The validity of the computer model is established by comparison with p/n devices produced by alloying an aluminum grating pattern into the surface of n-type silicon wafers. Current voltage characteristics and spectral response curves are presented for cells of this type constructed on wafers of different resistivities and orientations.

  8. A Novel Method to Fabricate Silicon Nanowire p-n Junctions by a Combination of Ion Implantation and in-situ Doping.

    Science.gov (United States)

    Kanungo, Pratyushdas; Kögler, Reinhard; Werner, Peter; Gösele, Ulrich; Skorupa, Wolfgang

    2009-11-08

    We demonstrate a novel method to fabricate an axial p-n junction inside oriented short vertical silicon nanowires grown by molecular beam epitaxy by combining ion implantation with in-situ doping. The lower halves of the nanowires were doped in-situ with boron (concentration ~1018cm-3), while the upper halves were doubly implanted with phosphorus to yield a uniform concentration of 2 × 1019 cm-3. Electrical measurements of individually contacted nanowires showed excellent diode characteristics and ideality factors close to 2. We think that this value of ideality factors arises out of a high rate of carrier recombination through surface states in the native oxide covering the nanowires.

  9. Design, fabrication, and performance analysis of GaN vertical electron transistors with a buried p/n junction

    Energy Technology Data Exchange (ETDEWEB)

    Yeluri, Ramya, E-mail: ramyay@ece.ucsb.edu; Lu, Jing; Keller, Stacia; Mishra, Umesh K. [Electrical and Computer Engineering Department, University of California Santa Barbara, Santa Barbara, California 93106 (United States); Hurni, Christophe A.; Browne, David A.; Speck, James S. [Materials Department, University of California Santa Barbara, Santa Barbara, California 93106 (United States); Chowdhury, Srabanti [School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, Arizona 85287 (United States)

    2015-05-04

    The Current Aperture Vertical Electron Transistor (CAVET) combines the high conductivity of the two dimensional electron gas channel at the AlGaN/GaN heterojunction with better field distribution offered by a vertical design. In this work, CAVETs with buried, conductive p-GaN layers as the current blocking layer are reported. The p-GaN layer was regrown by metalorganic chemical vapor deposition and the subsequent channel regrowth was done by ammonia molecular beam epitaxy to maintain the p-GaN conductivity. Transistors with high ON current (10.9 kA/cm{sup 2}) and low ON-resistance (0.4 mΩ cm{sup 2}) are demonstrated. Non-planar selective area regrowth is identified as the limiting factor to transistor breakdown, using planar and non-planar n/p/n structures. Planar n/p/n structures recorded an estimated electric field of 3.1 MV/cm, while non-planar structures showed a much lower breakdown voltage. Lowering the p-GaN regrowth temperature improved breakdown in the non-planar n/p/n structure. Combining high breakdown voltage with high current will enable GaN vertical transistors with high power densities.

  10. Determination of lifetime and surface recombination velocity of p-n junction solar cells and diodes by observing transients

    Science.gov (United States)

    Lindholm, Fredrik A.; Liou, Juin J.; Neugroschel, Arnost; Jung, Taewon W.

    1987-01-01

    The unified view of transient methods for the determination of recombination lifetime tau and back surface recombination velocity S presented here for silicon solar cells and diodes attempts to define limitations of existing methods and to evolve improvements. The presence of sizable junction capacitance for silicon devices under forward voltage invalidates the use of conventional open-circuit voltage decay (OCVD) and reverse recovery. This led Green (1983) to his method of compensated open-circuit voltage decay, in which the addition of an external resistor shunting the solar cell partially corrects for the presence of the junction capacitance. Setting this resistance to zero produces an electrical short-circuit current-decay method, which has the advantage of enabling determination of both tau and S. In an alternate approach, one may insert the functional dependence of the junction capacitance on forward voltage. This new method, denoted by the acronym OCVDCAP, enables the determination of tau with apparently greater accuracy than that obtained by previous methods utilizing voltage transients. But OCVDCAP has in common with the previous methods that it determines tau only and has practical utility only for determining tau of long-base devices. This means that it is useful only for thick base regions. In principle, however, it has an advantage over short-circuit current decay: it requires only pressure contacts, not ohmic contacts, and therefore may be used to determine tau after key processing steps in manufacturing.

  11. Effect of equivalent surface charge density on electrical field of positively beveled p-n junction%等效表面电荷对斜角造型p-n结表面电场的影响

    Institute of Scientific and Technical Information of China (English)

    吴春瑜; 王颖; 朱长纯

    2008-01-01

    The space-charge layer (SCL) and surface depletion area (SDA) model for beveled p-n junction is presented. Thesurface space-charge density is calculated for depletion case of beveled p-n junction. Based on the finite difference method,the effect of the equivalent surface charge density on the surface depletion area for positively beveled p-n junction is alsostudied. Thyristors passivated with polyimide (PI) or polyester improved silicon paint (SP) are fabricated to verify the effectof equivalent surface charge on the peripheral surface of beveled p-n junction. The change of leakage current is sensitive tothe surface charges. It indicates that the selection of passivation materials is a significant process to ensure the breakdownvoltage capability of beveled devices.

  12. Large-area, transparent, and flexible infrared photodetector fabricated using P-N junctions formed by N-doping chemical vapor deposition grown graphene.

    Science.gov (United States)

    Liu, Nan; Tian, He; Schwartz, Gregor; Tok, Jeffrey B-H; Ren, Tian-Ling; Bao, Zhenan

    2014-07-01

    Graphene is a highly promising material for high speed, broadband, and multicolor photodetection. Because of its lack of bandgap, individually gated P- and N-regions are needed to fabricate photodetectors. Here we report a technique for making a large-area photodetector on the basis of controllable fabrication of graphene P-N junctions. Our selectively doped chemical vapor deposition (CVD) graphene photodetector showed a ∼5% modulation of conductance under global IR irradiation. By comparing devices of various geometries, we identify that both the homogeneous and the P-N junction regions contribute competitively to the photoresponse. Furthermore, we demonstrate that our two-terminal graphene photodetector can be fabricated on both transparent and flexible substrates without the need for complex fabrication processes used in electrically gated three-terminal devices. This represents the first demonstration of a fully transparent and flexible graphene-based IR photodetector that exhibits both good photoresponsivity and high bending capability. This simple approach should facilitate the development of next generation high-performance IR photodetectors.

  13. Synthesis and enhanced photoelectrocatalytic activity of p-n junction Co{sub 3}O{sub 4}/TiO{sub 2} nanotube arrays

    Energy Technology Data Exchange (ETDEWEB)

    Dai Gaopeng, E-mail: dgp20028@hotmail.com [Department of Chemical engineering and Food Science, Hubei University of Arts and Science, Xiangyang 441053 (China); Liu Suqin [Department of Chemical engineering and Food Science, Hubei University of Arts and Science, Xiangyang 441053 (China); Liang Ying [Department of Chemical engineering and Food Science, Hubei University of Arts and Science, Xiangyang 441053 (China); Key laboratory of catalysis and materials science of the State Ethnic Affairs Commission and Ministry of Education, South-Central University for Nationalities, Wuhan 430074 (China); Luo Tianxiong [Department of Chemical engineering and Food Science, Hubei University of Arts and Science, Xiangyang 441053 (China)

    2013-01-01

    Highlights: Black-Right-Pointing-Pointer Co{sub 3}O{sub 4}/TiO{sub 2} nanotube arrays (NTs) were prepared by an impregnating-deposition-decompostion method treatment. Black-Right-Pointing-Pointer Co{sub 3}O{sub 4}/TiO{sub 2} NTs exhibit high photoelectrocatalytic (PEC) activity. Black-Right-Pointing-Pointer The high PEC activity was attribute to the formation of p-n junction between Co{sub 3}O{sub 4} and TiO{sub 2}. - Abstract: Co{sub 3}O{sub 4}/TiO{sub 2} nanotube arrays (NTs) were prepared by depositing Co{sub 3}O{sub 4} nanoparticles (NPs) on the tube wall of the self-organized TiO{sub 2} NTs using an impregnating-deposition-decompostion method. The prepared samples were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), and UV-vis absorption spectroscopy. The photoelectrocatalytic (PEC) activity is evaluated by degradation of methyl orange (MO) aqueous solution. The prepared Co{sub 3}O{sub 4}/TiO{sub 2} NTs exhibit much higher PEC activity than TiO{sub 2} NTs due to the p-n junction formed between Co{sub 3}O{sub 4} and TiO{sub 2}.

  14. In situ Ni-doping during cathodic electrodeposition of hematite for excellent photoelectrochemical performance of nanostructured nickel oxide-hematite p-n junction photoanode

    Science.gov (United States)

    Phuan, Yi Wen; Ibrahim, Elyas; Chong, Meng Nan; Zhu, Tao; Lee, Byeong-Kyu; Ocon, Joey D.; Chan, Eng Seng

    2017-01-01

    Nanostructured nickel oxide-hematite (NiO/α-Fe2O3) p-n junction photoanodes synthesized from in situ doping of nickel (Ni) during cathodic electrodeposition of hematite were successfully demonstrated. A postulation model was proposed to explain the fundamental mechanism of Ni2+ ions involved, and the eventual formation of NiO on the subsurface region of hematite that enhanced the potential photoelectrochemical water oxidation process. Through this study, it was found that the measured photocurrent densities of the Ni-doped hematite photoanodes were highly dependent on the concentrations of Ni dopant used. The optimum Ni dopant at 25 M% demonstrated an excellent photoelectrochemical performance of 7-folds enhancement as compared to bare hematite photoanode. This was attributed to the increased electron donor density through the p-n junction and thus lowering the energetic barrier for water oxidation activity at the optimum Ni dopant concentration. Concurrently, the in situ Ni-doping of hematite has also lowered the photogenerated charge carrier transfer resistance as measured using the electrochemical impedance spectroscopy. It is expected that the fundamental understanding gained through this study is helpful for the rational design and construction of highly efficient photoanodes for application in photoelectrochemical process.

  15. Substrate engineering by hexagonal boron nitride/SiO2 for hysteresis-free graphene FETs and large-scale graphene p-n junctions.

    Science.gov (United States)

    Xu, Hua; Wu, Juanxia; Chen, Yabin; Zhang, Haoli; Zhang, Jin

    2013-10-01

    We have explored an approach for the fabrication of intrinsic and hysteresis-free graphene field-effect transistors (FETs) and for the construction of graphene p-n junctions based on substrate engineering by hexagonal boron nitride (h-BN)/SiO2. The effect of various interfaces on the performance of the graphene FETs was systematically studied by constructing four types of graphene devices (graphene/SiO2 FETs, graphene/h-BN FETs, h-BN/graphene/SiO2 FETs, and h-BN/graphene/h-BN FETs). Graphene/SiO2 FETs and h-BN/graphene/SiO2 FETs always exhibit large hysteresis before and after annealing, whereas graphene/h-BN FETs and h-BN/graphene/h-BN FETs show intrinsic properties after annealing. Raman measurements also indicate that graphene on a SiO2 substrate contains large amounts of p-doping, whereas that on a h-BN substrate is intrinsic. Thus, the graphene/h-BN interface gives intrinsic and hysteresis-free graphene FETs, whilst the graphene/SiO2 interface affords p-doping and a hysteresis effect in the graphene FETs. This result is because h-BN serves as an insulation layer, which prevents charge trapping between the graphene and the charge traps at the graphene/SiO2 interface, which cause the hysteresis. In addition, the negligible electrostatic doping of h-BN into graphene also ensures the intrinsic and hysteresis-free properties of graphene/BN/SiO2 FETs. Moreover, benefitting from the p-doped and intrinsic features of graphene on SiO2 and h-BN substrates, respectively, large-scale graphene p-n junction superlattices with great potential difference are constructed and integrated into photodetector arrays by substrate engineering with h-BN/SiO2. Efficient hot carrier-assisted photocurrent was generated by laser excitation at the junction under ambient conditions.

  16. Electron-beam-induced current measurements with applied bias provide insight to locally resolved acceptor concentrations at p-n junctions

    Energy Technology Data Exchange (ETDEWEB)

    Abou-Ras, D., E-mail: daniel.abou-ras@helmholtz-berlin.de; Schäfer, N.; Baldaz, N.; Brunken, S. [Helmholtz-Zentrum Berlin für Materialien und Energie, Hahn-Meitner-Platz 1, 14109 Berlin (Germany); Boit, C. [Technische Universität Berlin, Department of Semiconductor Devices, Einsteinufer 19, 10587 Berlin (Germany)

    2015-07-15

    Electron-beam-induced current (EBIC) measurements have been employed for the investigation of the local electrical properties existing at various types of electrical junctions during the past decades. In the standard configuration, the device under investigation is analyzed under short-circuit conditions. Further insight into the function of the electrical junction can be obtained when applying a bias voltage. The present work gives insight into how EBIC measurements at applied bias can be conducted at the submicrometer level, at the example of CuInSe{sub 2} solar cells. From the EBIC profiles acquired across ZnO/CdS/CuInSe{sub 2}/Mo stacks exhibiting p-n junctions with different net doping densities in the CuInSe{sub 2} layers, values for the width of the space-charge region, w, were extracted. For all net doping densities, these values decreased with increasing applied voltage. Assuming a linear relationship between w{sup 2} and the applied voltage, the resulting net doping densities agreed well with the ones obtained by means of capacitance-voltage measurements.

  17. High-speed carrier-depletion silicon Mach-Zehnder optical modulators with lateral PN junctions

    Directory of Open Access Journals (Sweden)

    Graham Trevor Reed

    2014-12-01

    Full Text Available This paper presents new experimental data from a lateral PN junction silicon Mach-Zehnder optical modulator. Efficiencies in the 1.4V.cm to 1.9V.cm range are demonstrated for drive voltages between 0V and 6V. High speed operation up to 52Gbit/s is also presented. The performance of the device which has its PN junction positioned in the centre of the waveguide is then compared to previously reported data from a lateral PN junction device with the junction self-aligned to the edge of the waveguide rib. An improvement in modulation efficiency is demonstrated when the junction is positioned in the centre of the waveguide. Finally we propose schemes for achieving high modulation efficiency whilst retaining self-aligned formation of the PN junction.

  18. Zn doping induced conductivity transformation in NiO films for realization of p-n homo junction diode

    Science.gov (United States)

    Dewan, Sheetal; Tomar, Monika; Tandon, R. P.; Gupta, Vinay

    2017-06-01

    Mixed transition metal oxide, zinc doped NiO, Z n x N i 1 - x O (x = 0, 0.01, 0.02, 0.05, and 0.10), thin films have been fabricated by the RF magnetron sputtering technique in an oxygen deficit ambience at a growth temperature of 400 °C. The present report highlights the effect of Zn doping in NiO thin films on its structural, optical, and electrical properties. Optical transmission enhancement and band gap engineering in a-axis oriented NiO films have been demonstrated via Zn substitution. Hall effect measurements of the prepared samples revealed a transition from p-type to n-type conductivity in NiO at 2% Zn doping. A NiO based transparent p-n homojunction diode has been fabricated successfully, and the conduction mechanism dominating the diode properties is reported in detail. Current-voltage (I-V) characteristics of the homojunction diode are found to obey the Space Charge Limited Conduction mechanism with non-ideal square law behaviour.

  19. Limits for the graphene on ferroelectric domain wall p-n-junction rectifier for different regimes of current

    Science.gov (United States)

    Strikha, Maksym V.; Morozovska, Anna N.

    2016-12-01

    Here, we present the theory of the conductivity of a pn junction (pnJ) in a graphene channel, placed on a ferroelectric substrate, caused by the ferroelectric domain wall for the case of the arbitrary current regime: from ballistic to diffusive one. We calculated the ratio of the pnJ conductions for opposite polarities of voltages, applied to source and drain electrodes of the channel, G+to t a l /G-to t a l , as a function of graphene channel length L, electron mean free path λ, and ferroelectric substrate permittivity ɛ33f . We have demonstrated that the small values of G+to t a l /G-to t a l (0.1 and smaller), which correspond to the efficient graphene pnJ based rectifier, can be obtained for the ferroelectrics with high ɛ33f≫100 and for the ratios of L/λ ˜ 1 or smaller. However, for ferroelectrics with extremely high ɛ33f (relaxor or PbZrxTi1-xO3 with the composition x near the morphotropic phase boundary x = 0.52), the ratio G+to t a l /G-to t a l can be essentially smaller than unity for the case of a pronounced diffusive regime of current as well. This makes the ferroelectric substrates with high permittivity excellent candidates for the fabrication of new generation of rectifiers based on the graphene pnJ. The temperature effect on the G+to t a l /G-to t a l ratio was studied within the Landau-Ginzburg-Devonshire approach. We have demonstrated that the rectifying properties of the graphene pnJ become better in the vicinity of Curie temperature. However, for the temperatures higher than the Curie temperature, the rectifying effect vanishes due to the ferroelectric polarization disappearance.

  20. Effect of Plasma, RF, and RIE Treatments on Properties of Double-Sided High Voltage Solar Cells with Vertically Aligned p-n Junctions

    Directory of Open Access Journals (Sweden)

    Mykola O. Semenenko

    2016-01-01

    Full Text Available Si-based solar cells with vertically aligned p-n junctions operating at high voltage were designed and fabricated. The plasma treatments and antireflection coating deposition on the working surfaces of both single- and multijunction cells were made using the special holders. It was shown that additional treatment of solar cells in argon plasma prior to hydrogen plasma treatment and deposition of diamond-like carbon antireflection films led to the improvement of the cell efficiency by up to 60%. Radio frequency waves support plasma generation and improve photoelectric conversion mainly due to reduction of internal stresses at the interfaces. Application of reactive ion etching technique removes the broken layer, reduces elastic strain in the wafer, decreases recombination of charge carriers in the bulk, and provides cell efficiency increase by up to ten times.

  1. Carrier dynamics in nitride-based light-emitting p-n junction diodes with two active regions emitting at different wavelengths

    Science.gov (United States)

    Li, Y.-L.; Gessmann, Th.; Schubert, E. F.; Sheu, J. K.

    2003-08-01

    The carrier transport and recombination dynamics of monolithic InGaN/GaN light-emitting p-n junction structures with two active regions are investigated. Room-temperature and low-temperature photoluminescence and room-temperature electroluminescence measurements show two emission bands originating from the two active regions. In electroluminescence, the intensity ratio of the two emission bands is independent of injection current. In contrast, the intensity ratio depends strongly on the excitation intensity in photoluminescence measurements. The dependency of the emission on excitation is discussed and attributed to carrier transport between the two active regions and to the different carrier injection dynamics in photoluminescence and electroluminescence. The luminous efficacy of a Gaussian dichromatic white-light source is calculated assuming a line broadening ranging from 2kT to 10kT. Luminous efficacies ranging from 380 to 440 lm/W are obtained for broadened dichromatic sources.

  2. Dependences of spin polarization on the control parameters in the spin-polarized injection through the magnetic p-n junction

    Institute of Scientific and Technical Information of China (English)

    Zhang Lei; Deng Ning; Ren Min; Dong Hao; Chen Pei-Yi

    2007-01-01

    Effective spin-polarized injection from magnetic semiconductor (MS) to nonmagnetic semiconductor (NMS) has been highlighted in recent years. In this paper we study theoretically the dependence of nonequilibrium spin polarization (NESP) in NMS during spin-polarized injection through the magnetic p-n junction. Based on the theory in semiconductor physics, a model is established and the boundary conditions are determined in the case of no external spin-polarized injection and low bias. The control parameters that may influence the NESP in NMS are indicated by calculating the distribution of spin polarization. They are the doping concentrations, the equilibrium spin polarization in MS and the bias. The effective spin-polarized injection can' be realized more easily by optimizing the above parameters.

  3. Synthesis and photocatalytic degradation of methylene blue over p-n junction Co{sub 3}O{sub 4}/ZnO core/shell nanorods

    Energy Technology Data Exchange (ETDEWEB)

    Dong, Chengjun; Xiao, Xuechun; Chen, Gang; Guan, Hongtao; Wang, Yude, E-mail: ydwang@ynu.edu.cn

    2015-04-01

    One-dimension (1D) Co{sub 3}O{sub 4}/ZnO core/shell nanorods (NRs) were synthesized on nickel foil substrate by means of a two-step synthetic strategy. Co{sub 3}O{sub 4} NRs were initially fabricated by a facile hydrothermal reaction and then ZnO was coated via a simple thermal decomposition. The results verified that the surface of the p-type Co{sub 3}O{sub 4} core was uniformly assembled by the n-type ZnO nanoparticles with approximate 20 nm thickness. Compared with pristine Co{sub 3}O{sub 4} NRs, Co{sub 3}O{sub 4}/ZnO core/shell NRs was exhibited to have a much higher photocatalytic properties in the decomposition of a model dye compound, methylene blue (MB), under ultraviolet irradiation. As confirmed by Photoluminescence (PL) spectra, the formation of p-n junction heterostructures gives rise to the enhanced photocatalystic performance of Co{sub 3}O{sub 4}/ZnO core/shell NRs. This study provides a general and effective method in the fabrication of 1D composition NRs with sound heterojunctions that show remarkable enhancement of photocatalytic performance. - Highlights: • 1D Co{sub 3}O{sub 4}/ZnO core/shell NRs were synthesized on nickel foil by a two-step synthetic strategy. • The thickness of ZnO coating is determined to be about 20 nm. • Co{sub 3}O{sub 4}/ZnO NRs exhibited better photocatalytic performance for MB degradation under UV irradiation. • The formation of p-n junctions confirmed by PL is a critical factor for photocatalytic enhancement. • The working mechanism for Co{sub 3}O{sub 4}/ZnO NRs as photocatalyst was proposed.

  4. BiOI/TiO2 nanotube arrays, a unique flake-tube structured p-n junction with remarkable visible-light photoelectrocatalytic performance and stability.

    Science.gov (United States)

    Liu, Jiaqin; Ruan, Lili; Adeloju, Samuel B; Wu, Yucheng

    2014-01-28

    A series of unique flake-tube structured p-n heterojunctions of BiOI/TiO2 nanotube arrays (TNTAs) were successfully prepared by loading large amounts of BiOI nanoflakes onto both the outer and inner walls of well-separated TiO2 nanotubes using anodization followed by the sequential chemical bath deposition (S-CBD) method. The as-prepared BiOI/TNTAs samples were characterized by X-ray diffraction, electron microscopy, X-ray photoelectron spectroscopy, UV-vis diffuse reflectance spectroscopy and nitrogen sorption. The photoelectrocatalytic (PEC) activity and stability of the BiOI/TNTAs samples toward degradation of methyl orange (MO) solutions under visible-light irradiation (λ > 420 nm) were evaluated. The visible-light PEC performance of BiOI/TNTAs samples was further confirmed by the transient photocurrent response test. The results from the current study revealed that the 5-BiOI/TNTAs sample exhibited the best PEC activity, favourable stability, and the highest photocurrent density among all the BiOI/TNTAs heterostructured samples. The combined effects of several factors may contribute to the remarkable visible-light PEC performance for the 5-BiOI/TNTAs sample including a 3D connected intertube spacing system and an open tube-mouth structure, strong visible-light absorption by BiOI, the formation of a p-n junction, larger specific surface area, and the impact of the applied external electrostatic field.

  5. Electro-Optical Characteristics of P+n In0.53Ga0.47As Hetero-Junction Photodiodes in Large Format Dense Focal Plane Arrays

    Science.gov (United States)

    DeWames, R.; Littleton, R.; Witte, K.; Wichman, A.; Bellotti, E.; Pellegrino, J.

    2015-08-01

    This paper is concerned with focal plane array (FPA) data and use of analytical and three-dimensional numerical simulation methods to determine the physical effects and processes limiting performance. For shallow homojunction P+n designs the temperature dependence of dark current for T InGaAs interface. In this description the fitting property is the effective conductivity, σ eff( T), in mho cm-1. Variation in the data suggests σ eff (300 K) values of 1.2 × 10-11-4.6 × 10-11 mho cm-1). Substrate removal extends the quantum efficiency (QE) spectral band into the visible region. However, dead-layer effects limit the QE to 10% at a wavelength of 0.5 μm. For starlight-no moon illumination conditions, the signal-to-noise ratio is estimated to be 50 at an operating temperature of 300 K. A major result of the 3D numerical simulation of the device is the prediction of a perimeter G-R current not associated with the properties of the metallurgical interface. Another is the prediction that for a junction positioned in the larger band gap InP cap layer the QE is bias-dependent and that a relatively large reverse bias ≥0.9 V is needed for the QE to saturate to the shallow homojunction value. At this higher bias the dark current is larger than the shallow homojunction value. The 3D numerical model and the analytical model agree in predicting and explaining the measured radiatively limited diffusion current originating at the n-side of the junction. The calculations of the area-dependent G-R current for the condition studied are also in agreement. Unique advantages of the 3D numerical simulation are the ability to mimic real device structures, achieve deeper understanding of the real physical effects associated with the various methods of junction formation, and predict how device designs will function.

  6. Tandem photo-electrode of InGaN with two Si p-n junctions for CO2 conversion to HCOOH with the efficiency greater than biological photosynthesis

    Science.gov (United States)

    Sekimoto, Takeyuki; Shinagawa, Shuichi; Uetake, Yusuke; Noda, Keiichi; Deguchi, Masahiro; Yotsuhashi, Satoshi; Ohkawa, Kazuhiro

    2015-02-01

    We report on a highly improved CO2 to HCOOH conversion system using a tandem photo-electrode (TPE) of InGaN and two Si p-n junctions. To improve its efficiency, narrow-band-gap InGaN was applied as the photo-absorption layer. In the TPE structure, the current matching between GaN-based photo-absorption layer and two Si p-n junctions is crucial for the improvement of the efficiency. The energy conversion efficiency for HCOOH production reached 0.97%, which is greater than average of global biological photosynthetic one.

  7. Band alignment at the interface between Ni-doped Cr2O3 and Al-doped ZnO: implications for transparent p-n junctions

    Science.gov (United States)

    Arca, Elisabetta; McInerney, Michael A.; Shvets, Igor V.

    2016-06-01

    The realization of transparent electronic and optoelectronic devices requires the use of transparent p-n junctions. In this context, understanding the band alignment at the interface between the p- and n-components represents a fundamental step towards the realization of high performance devices. In this work, the band alignment at the interface between Al-doped ZnO (AZO) and Ni-doped Cr2O3 has been analysed. The formation and evolution of the core levels as the interface progressively forms have been followed by means of x-ray Photoelectron Spectroscopy, x-ray diffraction and x-ray reflectivity. A type two (staggered) band alignment was identified, with the valence band offset and conduction band offset found to be 2.6 eV and 2.5 eV, respectively. The electrical behaviour will be discussed in terms of the position of the bands, the presence of band bending and the expected built-in potential and how these can be engineered in order to achieve the maximum performance for this hetero-structure.

  8. Sputter deposition of Cu{sub 2}O thin films, nitrogen-doping and formation of Cu{sub 2}O-ZnO p/n junctions

    Energy Technology Data Exchange (ETDEWEB)

    Graubner, Swen; Kronenberger, Achim; Benz, Julian; Reppin, Daniel; Fischer, Martin; Polity, Angelika; Hofmann, Detlef; Henning, Torsten; Klar, Peter; Meyer, Bruno K. [I. Physikalisches Institut, JLU Giessen (Germany)

    2010-07-01

    Cu{sub 2}O is one of the rare intrinsically p-type conducting semiconductors, in addition the energy of its band gap is in the visible spectral range. Thus it is considered to be a promising material for thin-film-solar cell applications. Metallic and ceramic sputtering processes can be used for the thin-film deposition. Depending on the oxygen partial-pressure, the stoichiometric properties of Cu{sub x}O are adjustable from x=2 to x=1. The electrical properties change considerably depending on the copper-to-oxygen-ratio. It is commonly assumed that copper-vacancies are the dominant intrinsic acceptors in Cu{sub 2}O, thus high carrier concentrations come along with a reduced crystalline quality. Using nitrogen-gas for doping allows carrier concentrations of p=10{sup 15}-10{sup 17} cm{sup -3} without significantly reducing the structural properties of the Cu{sub 2}O-thin-films. By using ZnO as n-type semiconductor, first p/n hetero-junctions were realized. The mesa etched structures show rectifying behaviour and its electrical properties are discussed on the conference.

  9. In-plane topological p-n junction in the three-dimensional topological insulator Bi2-xSbxTe3-ySey

    Science.gov (United States)

    Tu, Ngoc Han; Tanabe, Yoichi; Satake, Yosuke; Huynh, Khuong Kim; Tanigaki, Katsumi

    2016-12-01

    A topological p-n junction (TPNJ) is an important concept to control spin and charge transport on a surface of three-dimensional topological insulators (3D-TIs). Here we report successful fabrication of such TPNJ on a surface of 3D-TI Bi2-xSbxTe3-ySey thin films and experimental observation of the electrical transport. By tuning the chemical potential of n-type topological Dirac surface of Bi2-xSbxTe3-ySey on its top half by using tetrafluoro-7,7,8,8-tetracyanoquinodimethane as an organic acceptor molecule, a half surface can be converted to p-type with leaving the other half side as the opposite n-type, and consequently TPNJ can be created. By sweeping the back-gate voltage in the field effect transistor structure, the TPNJ was controlled both on the bottom and the top surfaces. A dramatic change in electrical transport observed at the TPNJ on 3D-TI thin films promises novel spin and charge transport of 3D-TIs for future spintronics.

  10. Lateral resistance reduction induced by light-controlled leak current in silicon-based Schottky junction

    Institute of Scientific and Technical Information of China (English)

    王拴虎; 张勖; 邹吕宽; 赵靓; 王文鑫; 孙继荣

    2015-01-01

    Lateral resistance of silicon-based p-type and n-type Schottky junctions is investigated. After one electrode on a metallic film is irradiated, the differential lateral resistance of the system is dependent on the direction of the bias current:it keeps constant in one direction and decreases in the opposite direction. By systematically investigating the electrical potential changes in silicon and the junction, we propose a new mechanism based on light-controlled leak current. Our work provides an insight into the nature of this phenomenon and will facilitate the advanced design of switchable devices.

  11. A complete analytic model for the base and collector current in lateral p-n-p transistors

    Science.gov (United States)

    Eltoukhy, A. A.; Roulston, D. J.

    1984-01-01

    A complete analytical model to calculate the different current components in the lateral pnp transistor is derived using regional approximations. The model is based on a rigorous two dimensional solution of the continuity equations in the base region as well as the emitter region. A comparison between the two dimensional analysis and the analytic model is given for different values of epitaxial layer thickness, base width and doping profile.

  12. Direct lateral interbody fusion (DLIF) at the lumbosacral junction L5-S1.

    Science.gov (United States)

    Shirzadi, Ali; Birch, Kurtis; Drazin, Doniel; Liu, John C; Acosta, Frank

    2012-07-01

    The direct lateral interbody fusion (DLIF), a minimally invasive lateral approach for placement of an interbody fusion device, does not require nerve root retraction or any contact with the great vessels and can lead to short operative times with little blood loss. Due to anatomical restrictions, this procedure has not been used at the lumbosacral (L5-S1) junction. Lumbosacral transitional vertebrae (LSTV), a structural anomaly of the lumbosacral spine associated with low back pain, can result in a level being wrongly identified pre-operatively due to misnumbering of the vertebral levels. To our knowledge, use of the DLIF graft in this patient is the first report of an interbody fusion graft being placed at the disc space between the LSTV and S1 via the transpsoas route. We present a review of the literature regarding the LSTV variation as well as the lateral placement of interbody fusion grafts at the lumbosacral junction.

  13. Nanosecond photoelectric effects in all-oxide p-n junction of La0.9Sr0.1MnO3/SrNb0.01Ti0.99O3

    Institute of Scientific and Technical Information of China (English)

    HUANG Yanhong; YANG Guozhen; L(U) Huibin; HE Meng; ZHAO Kun; CHEN Zhenghao; CHENG Bolin; ZHOU Yueliang; JIN Kuijuan; DAI Shouyu

    2005-01-01

    Nanosecond (ns) photoelectric effects have been observed in all-oxide p-n junctions of La0.9Sr0.1MnO3/SrNb0.01Ti0.99O3 for the first time. The rise time was about 23 ns and the full width at half maximum was about 125 ns for the open-circuit photovoltaic pulse when the La0.9Sr0.1MnO3 thin film in the p-n junction was irradiated by a laser of ~20 ns pulse duration and 308 nm wavelength. The photovoltaic sensitivity was 80 mV/mJ for a 308 nm laser pulse.

  14. An all-perovskite p-n junction based on transparent conducting p -La 1-x Sr x CrO 3 epitaxial layers

    Energy Technology Data Exchange (ETDEWEB)

    Du, Yingge; Li, Chen; Zhang, Kelvin H. L.; McBriarty, Martin E.; Spurgeon, Steven R.; Mehta, Hardeep S.; Wu, Di; Chambers, Scott A.

    2017-08-07

    Transparent, conducting p -La 1-x Sr x CrO 3 epitaxial layers were deposited on Nb-doped SrTiO3(001) by oxygen-assisted molecular beam epitaxy to form structurally coherent p-n junctions. X-ray photoelectron spectroscopy reveals a type II or “staggered” band alignment, with valence and conduction band offsets of 2.0 eV and 0.9 eV, respectively. Diodes fabricated from these heterojunctions exhibit rectifying behavior, and the I-V characteristics are different from those for traditional semiconductor p-n junctions. A rather large ideality factor is ascribed to the complex nature of the interface.

  15. Large lateral photovoltaic effect with ultrafast relaxation time in SnSe/Si junction

    Science.gov (United States)

    Wang, Xianjie; Zhao, Xiaofeng; Hu, Chang; Zhang, Yang; Song, Bingqian; Zhang, Lingli; Liu, Weilong; Lv, Zhe; Zhang, Yu; Tang, Jinke; Sui, Yu; Song, Bo

    2016-07-01

    In this paper, we report a large lateral photovoltaic effect (LPE) with ultrafast relaxation time in SnSe/p-Si junctions. The LPE shows a linear dependence on the position of the laser spot, and the position sensitivity is as high as 250 mV mm-1. The optical response time and the relaxation time of the LPE are about 100 ns and 2 μs, respectively. The current-voltage curve on the surface of the SnSe film indicates the formation of an inversion layer at the SnSe/p-Si interface. Our results clearly suggest that most of the excited-electrons diffuse laterally in the inversion layer at the SnSe/p-Si interface, which results in a large LPE with ultrafast relaxation time. The high positional sensitivity and ultrafast relaxation time of the LPE make the SnSe/p-Si junction a promising candidate for a wide range of optoelectronic applications.

  16. Junction termination extension (JTE) with variation lateral doping (VLD) optimization method

    CERN Document Server

    Chernyavskiy, Evgeny

    2016-01-01

    A simple and effective method for the junction termination design was suggested. Optimization method uses lateral charge function F(x) which depends from two arguments and can be changed in wide range of shapes. To demonstrate method effectiveness, design and optimization example for the HV diode (1800 V) edge termination was shown. Achieved breakdown voltage is 93% of the corresponding 1D structure breakdown voltage.

  17. The performances of silicon solar cell with core-shell p-n junctions of micro-nano pillars fabricated by cesium chloride self-assembly and dry etching

    Science.gov (United States)

    Liu, Jing; Zhang, Xinshuai; Dong, Gangqiang; Liao, Yuanxun; Wang, Bo; Zhang, Tianchong; Yi, Futing

    2014-03-01

    Silicon micro-nano pillars are cost-efficiently integrated using twice cesium chloride (CsCl) islands lithography technique and dry etching for solar cell applications. The micro PMMA islands are fabricated by inductively coupled plasma (ICP) dry etching with micro CsCl islands as masks, and the nano CsCl islands with nano sizes then are made on the surface of micro PMMA islands and silicon. By ICP dry etching with the mask of micro PMMA islands and nano CsCl islands, the micro-nano silicon pillars are made and certain height micro pillars are randomly positioned between dense arrays of nano pillars with different morphologies by controlling etching conditions. With 300 nm depth p-n junction detected by secondary-ion mass spectrometry (SIMS), the micro pillars of the diameter about 1 μm form the core-shell p-n junction to maximize utility of p-n junction interface and enable efficient free carrier collection, and the nano tapered pillars of 150 nm diameter are used to decrease reflection by a graded-refractive-index. Compared to single micro or nano pillar arrayed cells, the co-integrated solar cell with micro and nano pillars demonstrates improved photovoltaic characteristic that is a photovoltaic conversion efficiency (PCE) of 15.35 % with a short circuit current density ( J sc) of 38.40 mA/cm2 and an open circuit voltage ( V oc) of 555.7 mV, which benefits from the advantages of micro-nano pillar structures and can be further improved upon process optimization.

  18. Topological Insulator Bi2Se3/Si-Nanowire-Based p-n Junction Diode for High-Performance Near-Infrared Photodetector.

    Science.gov (United States)

    Das, Biswajit; Das, Nirmalya S; Sarkar, Samrat; Chatterjee, Biplab K; Chattopadhyay, Kalyan K

    2017-07-12

    Chemically derived topological insulator Bi2Se3 nanoflake/Si nanowire (SiNWs) heterojunctions were fabricated employing all eco-friendly cost-effective chemical route for the first time. X-ray diffraction studies confirmed proper phase formation of Bi2Se3 nanoflakes. The morphological features of the individual components and time-evolved hybrid structures were studied using field emission scanning electron microscope. High resolution transmission electron microscopic studies were performed to investigate the actual nature of junction whereas elemental distributions at junction, along with overall stoichiometry of the samples were analyzed using energy dispersive X-ray studies. Temperature dependent current-voltage characteristics and variation of barrier height and ideality factor was studied between 50 and 300 K. An increase in barrier height and decrease in the ideality factor were observed with increasing temperature for the sample. The rectification ratio (I+/I-) for SiNWs substrate over pristine Si substrate under dark and near-infrared (NIR) irradiation of 890 nm was found to be 3.63 and 10.44, respectively. Furthermore, opto-electrical characterizations were performed for different light power intensities and highest photo responsivity and detectivity were determined to be 934.1 A/W and 2.30 × 10(13) Jones, respectively. Those values are appreciably higher than previous reports for topological insulator based devices. Thus, this work establishes a hybrid system based on topological insulator Bi2Se3 nanoflake and Si nanowire as the newest efficient candidate for advanced optoelectronic materials.

  19. Hybrid Tunnel Junction-Graphene Transparent Conductive Electrodes for Nitride Lateral Light Emitting Diodes.

    Science.gov (United States)

    Wang, Liancheng; Cheng, Yan; Liu, Zhiqiang; Yi, Xiaoyan; Zhu, Hongwei; Wang, Guohong

    2016-01-20

    Graphene transparent conductive electrode (TCE) applications in nitride light emitting diodes (LEDs) are still limited by the large contact resistance and interface barrier between graphene and p-GaN. We propose a hybrid tunnel junction (TJ)-graphene TCE approach for nitride lateral LEDs theoretically and experimentally. Through simulation using commercial advanced physical models of semiconductor devices (APSYS), we found that low tunnel resistance can be achieved in the n(+)-GaN/u-InGaN/p(+)-GaN TJ, which has a lower tunneling barrier and an enhanced electric field due to the polarization effect. Graphene TCEs and hybrid graphene-TJ TCEs are then modeled. The designed hybrid TJ-graphene TCEs show sufficient current diffusion length (Ls), low introduced series resistance, and high transmittance. The assembled TJ LED with the triple-layer graphene (TLG) TCEs show comparable optoelectrical performance (3.99 V@20 mA, LOP = 10.8 mW) with the reference LED with ITO TCEs (3.36 V@20 mA, LOP = 12.6 mW). The experimental results further prove that the TJ-graphene structure can be successfully incorporated as TCEs for lateral nitride LEDs.

  20. Functional lateralization of temporoparietal junction - imitation inhibition, visual perspective-taking and theory of mind.

    Science.gov (United States)

    Santiesteban, Idalmis; Banissy, Michael J; Catmur, Caroline; Bird, Geoffrey

    2015-10-01

    Although neuroimaging studies have consistently identified the temporoparietal junction (TPJ) as a key brain region involved in social cognition, the literature is far from consistent with respect to lateralization of function. For example, during theory-of-mind tasks bilateral TPJ activation is found in some studies but only right hemisphere activation in others. Visual perspective-taking and imitation inhibition, which have been argued to recruit the same socio-cognitive processes as theory of mind, are associated with unilateral activation of either left TPJ (perspective taking) or right TPJ (imitation inhibition). The present study investigated the functional lateralization of TPJ involvement in the above three socio-cognitive abilities using transcranial direct current stimulation. Three groups of healthy adults received anodal stimulation over right TPJ, left TPJ or the occipital cortex prior to performing three tasks (imitation inhibition, visual perspective-taking and theory of mind). In contrast to the extant neuroimaging literature, our results suggest bilateral TPJ involvement in imitation inhibition and visual perspective-taking, while no effect of anodal stimulation was observed on theory of mind. The discrepancy between these findings and those obtained using neuroimaging highlight the efficacy of neurostimulation as a complementary methodological tool in cognitive neuroscience. © 2015 Federation of European Neuroscience Societies and John Wiley & Sons Ltd.

  1. A p-n Junction Modulation Technique for Printed Thin Film Solar Cell%一种印刷型薄膜太阳能电池p-n结调制技术

    Institute of Scientific and Technical Information of China (English)

    朱子诚; 王伟; 蒋辰; 周芳芳

    2013-01-01

    能带值为0.5~0.85 eV材料的稀缺是多结太阳能电池面临的一个主要挑战,本文使用非真空的机械化学法合成了能带值为0.83 eV的Cu2SnS3化合物,使用印刷技术将其制备成吸收层薄膜,并采用superstrate太阳能电池结构(Mo/Cu2SnS3/In2S3/TiO2/FTO glass)对其光伏特性进行了研究.实验表明所制备的太阳能电池短路电流密度、开路电压、填充因子和转换效率分别为12.38 mA/cm2、320 mV、0.28和1.10%.此外.为更好地满足多结太阳能电池对电流匹配的需求,本文对所制备太阳能电池的Cu2SnS3/In2S3p-n结进行了分析.通过在p-n结界面植入一层薄的疏松缓冲层,使调制后的太阳能电池短路电流密度从最初的12.38 mA/cm-2增加到了23.15 mA/cm2,相应太阳能电池转换效率从1.1%增加到了1.92%.该p-n调制技术对印刷型薄膜太阳能电池具有重要借鉴意义.%The scarcity of materials with band gap value of 0. 5~0. 85 eV is one of the major challenges for the multi-junction solar cells. In this study, the compounds Cu2SnS3 with band gap of 0. 83 eV is synthesized by non-vacuum mechanochemical method, and is prepared into absorber layer by non-vacuum printing technique. The photovoltaic properties of the Cu2SnS3 are studied by employing a superstrate solar cell structure of Mo/Cu2SnS3/In2S3/TiO2/FTO glass. Experiment result indicates that the short-circuit current density, open-circuit voltage, fill factor and conversion efficiency of the fabricated solar cell are 12.38 mA/cm2 , 320 mV, 0. 28% and 1. 10%, respectively. Furthermore, to better meet the requirements of multi-junction solar cell on the current matching, the Cu2SnS3/In2S3 p-n junction of the fabricated solar cell is analyzed. A p-n modulation technique with a thin porous buffer layer inserted into the p-n junction interface is proposed. The results indicate that the technique can promote the short-circuit current density of the solar cell from initial 12

  2. Molecular beam epitaxial growth of Bi2Te3 and Sb2Te3 topological insulators on GaAs (111 substrates: a potential route to fabricate topological insulator p-n junction

    Directory of Open Access Journals (Sweden)

    Zhaoquan Zeng

    2013-07-01

    Full Text Available High quality Bi2Te3 and Sb2Te3 topological insulators films were epitaxially grown on GaAs (111 substrate using solid source molecular beam epitaxy. Their growth and behavior on both vicinal and non-vicinal GaAs (111 substrates were investigated by reflection high-energy electron diffraction, atomic force microscopy, X-ray diffraction, and high resolution transmission electron microscopy. It is found that non-vicinal GaAs (111 substrate is better than a vicinal substrate to provide high quality Bi2Te3 and Sb2Te3 films. Hall and magnetoresistance measurements indicate that p type Sb2Te3 and n type Bi2Te3 topological insulator films can be directly grown on a GaAs (111 substrate, which may pave a way to fabricate topological insulator p-n junction on the same substrate, compatible with the fabrication process of present semiconductor optoelectronic devices.

  3. Blockade of gap junction hemichannel suppresses disease progression in mouse models of amyotrophic lateral sclerosis and Alzheimer's disease.

    Science.gov (United States)

    Takeuchi, Hideyuki; Mizoguchi, Hiroyuki; Doi, Yukiko; Jin, Shijie; Noda, Mariko; Liang, Jianfeng; Li, Hua; Zhou, Yan; Mori, Rarami; Yasuoka, Satoko; Li, Endong; Parajuli, Bijay; Kawanokuchi, Jun; Sonobe, Yoshifumi; Sato, Jun; Yamanaka, Koji; Sobue, Gen; Mizuno, Tetsuya; Suzumura, Akio

    2011-01-01

    Glutamate released by activated microglia induces excitotoxic neuronal death, which likely contributes to non-cell autonomous neuronal death in neurodegenerative diseases, including amyotrophic lateral sclerosis and Alzheimer's disease. Although both blockade of glutamate receptors and inhibition of microglial activation are the therapeutic candidates for these neurodegenerative diseases, glutamate receptor blockers also perturbed physiological and essential glutamate signals, and inhibitors of microglial activation suppressed both neurotoxic/neuroprotective roles of microglia and hardly affected disease progression. We previously demonstrated that activated microglia release a large amount of glutamate specifically through gap junction hemichannel. Hence, blockade of gap junction hemichannel may be potentially beneficial in treatment of neurodegenerative diseases. In this study, we generated a novel blood-brain barrier permeable gap junction hemichannel blocker based on glycyrrhetinic acid. We found that pharmacologic blockade of gap junction hemichannel inhibited excessive glutamate release from activated microglia in vitro and in vivo without producing notable toxicity. Blocking gap junction hemichannel significantly suppressed neuronal loss of the spinal cord and extended survival in transgenic mice carrying human superoxide dismutase 1 with G93A or G37R mutation as an amyotrophic lateral sclerosis mouse model. Moreover, blockade of gap junction hemichannel also significantly improved memory impairments without altering amyloid β deposition in double transgenic mice expressing human amyloid precursor protein with K595N and M596L mutations and presenilin 1 with A264E mutation as an Alzheimer's disease mouse model. Our results suggest that gap junction hemichannel blockers may represent a new therapeutic strategy to target neurotoxic microglia specifically and prevent microglia-mediated neuronal death in various neurodegenerative diseases.

  4. Blockade of gap junction hemichannel suppresses disease progression in mouse models of amyotrophic lateral sclerosis and Alzheimer's disease.

    Directory of Open Access Journals (Sweden)

    Hideyuki Takeuchi

    Full Text Available BACKGROUND: Glutamate released by activated microglia induces excitotoxic neuronal death, which likely contributes to non-cell autonomous neuronal death in neurodegenerative diseases, including amyotrophic lateral sclerosis and Alzheimer's disease. Although both blockade of glutamate receptors and inhibition of microglial activation are the therapeutic candidates for these neurodegenerative diseases, glutamate receptor blockers also perturbed physiological and essential glutamate signals, and inhibitors of microglial activation suppressed both neurotoxic/neuroprotective roles of microglia and hardly affected disease progression. We previously demonstrated that activated microglia release a large amount of glutamate specifically through gap junction hemichannel. Hence, blockade of gap junction hemichannel may be potentially beneficial in treatment of neurodegenerative diseases. METHODS AND FINDINGS: In this study, we generated a novel blood-brain barrier permeable gap junction hemichannel blocker based on glycyrrhetinic acid. We found that pharmacologic blockade of gap junction hemichannel inhibited excessive glutamate release from activated microglia in vitro and in vivo without producing notable toxicity. Blocking gap junction hemichannel significantly suppressed neuronal loss of the spinal cord and extended survival in transgenic mice carrying human superoxide dismutase 1 with G93A or G37R mutation as an amyotrophic lateral sclerosis mouse model. Moreover, blockade of gap junction hemichannel also significantly improved memory impairments without altering amyloid β deposition in double transgenic mice expressing human amyloid precursor protein with K595N and M596L mutations and presenilin 1 with A264E mutation as an Alzheimer's disease mouse model. CONCLUSIONS: Our results suggest that gap junction hemichannel blockers may represent a new therapeutic strategy to target neurotoxic microglia specifically and prevent microglia-mediated neuronal

  5. Neuromuscular Junction Impairment in Amyotrophic Lateral Sclerosis: Reassessing the Role of Acetylcholinesterase

    Science.gov (United States)

    Campanari, Maria-Letizia; García-Ayllón, María-Salud; Ciura, Sorana; Sáez-Valero, Javier; Kabashi, Edor

    2016-01-01

    Amyotrophic Lateral Sclerosis (ALS) is a highly debilitating disease caused by progressive degeneration of motorneurons (MNs). Due to the wide variety of genes and mutations identified in ALS, a highly varied etiology could ultimately converge to produce similar clinical symptoms. A major hypothesis in ALS research is the “distal axonopathy” with pathological changes occurring at the neuromuscular junction (NMJ), at very early stages of the disease, prior to MNs degeneration and onset of clinical symptoms. The NMJ is a highly specialized cholinergic synapse, allowing signaling between muscle and nerve necessary for skeletal muscle function. This nerve-muscle contact is characterized by the clustering of the collagen-tailed form of acetylcholinesterase (ColQ-AChE), together with other components of the extracellular matrix (ECM) and specific key molecules in the NMJ formation. Interestingly, in addition to their cholinergic role AChE is thought to play several “non-classical” roles that do not require catalytic function, most prominent among these is the facilitation of neurite growth, NMJ formation and survival. In all this context, abnormalities of AChE content have been found in plasma of ALS patients, in which AChE changes may reflect the neuromuscular disruption. We review these findings and particularly the evidences of changes of AChE at neuromuscular synapse in the pre-symptomatic stages of ALS. PMID:28082868

  6. Adducin at the Neuromuscular Junction in Amyotrophic Lateral Sclerosis: Hanging on for Dear Life

    Directory of Open Access Journals (Sweden)

    Charles eKrieger

    2016-01-01

    Full Text Available The neurological dysfunction in amyotrophic lateral sclerosis (ALS/motor neurone disease (MND is associated with defective nerve-muscle contacts early in the disease suggesting that perturbations of cell adhesion molecules linking the pre- and post-synaptic components of the neuromuscular junction (NMJ are involved. To search for candidate proteins implicated in this degenerative process, researchers have studied the Drosophila larval NMJ and find that the cytoskeleton-associated protein, adducin, is ideally placed to regulate synaptic contacts. By controlling the levels of synaptic proteins, adducin can de-stabilize synaptic contacts. Interestingly, elevated levels of phosphorylated adducin have been reported in ALS patients and in a mouse model of the disease. Adducin is regulated by phosphorylation through protein kinase C (PKC, some isoforms of which exhibit Ca2+-dependence, raising the possibility that changes in intracellular Ca2+ might alter PKC activation and secondarily influence adducin phosphorylation. Furthermore, adducin has interactions with the alpha subunit of the Na+/K+-ATPase. Thus, the phosphorylation of adducin may secondarily influence synaptic stability at the NMJ and so influence pre- and post-synaptic integrity at the NMJ in ALS.

  7. Near-ultraviolet lateral photovoltaic effect in Fe3O4/3C-SiC Schottky junctions.

    Science.gov (United States)

    Song, Bingqian; Wang, Xianjie; Li, Bo; Zhang, Lingli; Lv, Zhe; Zhang, Yu; Wang, Yang; Tang, Jinke; Xu, Ping; Li, Bingsheng; Yang, Yanqiang; Sui, Yu; Song, Bo

    2016-10-17

    In this paper, we report a sensitive lateral photovoltaic effect (LPE) in Fe3O4/3C-SiC Schottky junctions with a fast relaxation time at near-ultraviolet wavelengths. The rectifying behavior suggests that the large build-in electric field was formed in the Schottky junctions. This device has excellent position sensitivity as high as 67.8 mV mm-1 illuminated by a 405 nm laser. The optical relaxation time of the LPE is about 30 μs. The fast relaxation and high positional sensitivity of the LPE make the Fe3O4/3C-SiC junction a promising candidate for a wide range of ultraviolet/near-ultraviolet optoelectronic applications.

  8. Focal junctions retard lateral movement and disrupt fluid phase connectivity in the plasma membrane

    DEFF Research Database (Denmark)

    Vind-Kezunovic, D.; Wojewodzka, U.; Gniadecki, R.

    2008-01-01

    containing liquid-ordered (L-o) lipids. Indeed, values of maximal fluorescence recovery after photobleaching revealed that the long-range mobility of cholera toxin B subunit (CTB, marker of L-o) was similar to 1.5-fold retarded within the focal junctions compared to the surrounding membrane. However, 1......,1'-dioctadecyl-3,3,3',3'-tetramethylindocarbocyanine perchlorate (DiI-C-18:0), which specifically partitions to the liquid-disordered (L-d), non-raft phase, was also enriched in focal junctions and its mobility was slightly retarded. Cross-linking of GM(1) by CTB or raft aggregation by methyl...

  9. Can extracapsular lymph node involvement be a tool to fine-tune pN1 for adenocarcinoma of the oesophagus and gastro-oesophageal junction in the Union Internationale contre le Cancer (UICC) TNM 7th edition?†.

    Science.gov (United States)

    Nafteux, Philippe; Lerut, Toni; De Hertogh, Gert; Moons, Johnny; Coosemans, Willy; Decker, Georges; Van Veer, Hans; De Leyn, Paul

    2014-06-01

    The current (7th) International Union Against Cancer (UICC) pN staging system is based on the number of positive lymph nodes but does not take into consideration the characteristics of the metastatic lymph nodes itself. In particular, it has been suggested that tumour penetration beyond the lymph node capsule in metastatic lymph nodes, which is also called extracapsular lymph node involvement, has a prognostic impact. The aim of the current study was to assess the prognostic value of extracapsular (EC) and intracapsular (IC) lymph node involvement (LNI) in adenocarcinoma of the oesophagus and gastro-oesophageal junction (GOJ) and to assess its potential impact on the 7th edition of the UICC TNM manual. From 2000 to 2010, all consecutive adenocarcinoma patients with primary R0-resection (n = 499) were prospectively included for analysis. The number of resected lymph nodes, number of positive lymph nodes and number of EC-LNI/IC-LNI were determined. Extracapsular spread was defined as infiltration of cancer cells beyond the capsule of the positive lymph node. Two hundred and eighteen (43%) patients had positive lymph nodes. Cancer-specific 5-year survival in lymph node-positive patients was significantly (P TNM classification resulted in improved homogeneity, monotonicity of gradients and discriminatory ability indicating an improved performance of the staging system. EC-LNI is associated with worse survival compared with IC-LNI. EC-LNI patients show survival rates that are more closely associated with the current TNM stage IIIB, while IC-LNI patients have a survival more similar to TNM stage IIB. Incorporating the EC-IC factor in the TNM classification results in an increased performance of the TNM model. Further confirmation from other centres is required within the context of future adaptations of the UICC/AJCC (American Joint Committee on Cancer) staging system for oesophageal cancer. © The Author 2014. Published by Oxford University Press on behalf of the

  10. Measuring Neuromuscular Junction Functionality in the SOD1(G93A) Animal Model of Amyotrophic Lateral Sclerosis.

    Science.gov (United States)

    Rizzuto, Emanuele; Pisu, Simona; Musarò, Antonio; Del Prete, Zaccaria

    2015-09-01

    Amyotrophic lateral sclerosis (ALS) is a fatal neurodegenerative disease that leads to motor neuron degeneration, alteration in neuromuscular junctions (NMJs), muscle atrophy, and paralysis. To investigate the NMJ functionality in ALS we tested, in vitro, two innervated muscle types excised from SOD1(G93A) transgenic mice at the end-stage of the disease: the Soleus, a postural muscle almost completely paralyzed at that stage, and the diaphragm, which, on the contrary, is functional until death. To this aim we employed an experimental protocol that combined two types of electrical stimulation: the direct stimulation and the stimulation through the nerve. The technique we applied allowed us to determine the relevance of NMJ functionality separately from muscle contractile properties in SOD1(G93A) animal model. Functional measurements revealed that the muscle contractility of transgenic diaphragms is almost unaltered in comparison to control muscles, while transgenic Soleus muscles were severely compromised. In contrast, when stimulated via the nerve, both transgenic muscle types showed a strong decrease of the contraction force, a slowing down of the kinetic parameters, as well as alterations in the neurotransmission failure parameter. All together, these results confirm a severely impaired functionality in the SOD1(G93A) neuromuscular junctions.

  11. Draft Genome Sequences of Escherichia coli Strains Isolated at Calving from the Uterus, Vagina, Vulva, and Rectoanal Junction of a Dairy Cow That Later Developed Metritis.

    Science.gov (United States)

    Jeon, Soo Jin; Cunha, Federico; Ginn, Amber; Jeong, KwangCheol Casey; Galvão, Klibs N

    2017-03-16

    Escherichia coli is involved in the pathogenicity of metritis in cows. We report here the genome sequences of E. coli strains isolated at calving from the uterus, vagina, vulva, and rectoanal junction of a dairy cow that later developed metritis. The genomic similarities will give an insight into phylogenetic relationships among strains. Copyright © 2017 Jeon et al.

  12. Vertebral Artery Transposition Via an Extreme-Lateral Approach for Anterior Foramen Magnum Meningioma or Craniocervical Junction Tumors.

    Science.gov (United States)

    Park, Hun Ho; Lee, Kyu-Sung; Hong, Chang-Ki

    2016-04-01

    Vertebral artery (VA) transposition in the extreme-lateral transcondylar approach can minimize the manipulation of the low cranial nerves and the brain stem. The authors describe the surgical technique of VA transposition. From March 2000 to December 2014, 28 of 48 patients underwent VA transposition for anterior foramen magnum meningioma (16 patients) and craniocervical junction (CCJ) tumors (12 patients). Tumor was resected via an extreme-lateral approach with partial condylectomy to expose the anterior portion of the brain stem. For intradural tumors, the VA was mobilized caudomedially after circumferential dural incision around the VA at the level of the foramen magnum. For extradural tumors involving the CCJ, VA was transposed medially from the transverse foramen of C1 without any dural incision. Gross total resection was achieved in 26 of 28 patients (92.9%) with VA transposition. Histologically, meningioma and schwannoma were most common. The origin of the tumors was foramen magnum (57.1%), C1 nerve root (17.9%), clivus (10.7%), jugular foramen (7.1%), posterior skull base (3.6%), and hypoglossal canal (3.6%). VA transposition was performed intradurally in 19 patients (67.9%) and extradurally in 9 patients (32.1%). Surgical morbidity was 17.9% including 4 patients with hypoglossal nerve palsy and 1 patient with quadriparesis. The mean follow-up duration after surgery was 4.2 years (range, 0.1-14.8 years). VA transposition can provide a wide surgical window for anterior foramen magnum meningioma or tumors involving the CCJ with the least manipulation of the neuraxis. Copyright © 2016 Elsevier Inc. All rights reserved.

  13. Photoelectrochemical corrosion of GaN-based p-n structures

    Science.gov (United States)

    Fomichev, A. D.; Kurin, S. Yu; Ermakovi, I. A.; Puzyk, M. V.; Usikov, A. S.; Helava, H.; Nikiforov, A.; Papchenko, B. P.; Makarov, Yu N.; Chernyakov, A. E.

    2016-08-01

    Direct water photoelectrolysis using III-N materials is a promising way for hydrogen production. GaN/AlGaN based p-n structures were used in a photoelectrochemical process to investigate the material etching (corrosion) in an electrolyte. At the beginning, the corrosion performs through the top p-type layers via channels associated with threading defects and can penetrate deep into the structure. Then, the corrosion process occurs in lateral direction in n- type layers forming voids and cavities in the structure. The lateral etching is due to net positive charges at the AlGaN/GaN interfaces arising because of spontaneous and piezoelectric polarization in the structure and positively charged ionized donors in the space charge region of the p-n junction.

  14. Blockade of Gap Junction Hemichannel Suppresses Disease Progression in Mouse Models of Amyotrophic Lateral Sclerosis and Alzheimer's Disease: e21108

    National Research Council Canada - National Science Library

    Hideyuki Takeuchi; Hiroyuki Mizoguchi; Yukiko Doi; Shijie Jin; Mariko Noda; Jianfeng Liang; Hua Li; Yan Zhou; Rarami Mori; Satoko Yasuoka; Endong Li; Bijay Parajuli; Jun Kawanokuchi; Yoshifumi Sonobe; Jun Sato; Koji Yamanaka; Gen Sobue; Tetsuya Mizuno; Akio Suzumura

    2011-01-01

    ... neurotoxic/neuroprotective roles of microglia and hardly affected disease progression. We previously demonstrated that activated microglia release a large amount of glutamate specifically through gap junction hemichannel...

  15. A highly efficient visible-light-driven novel p-n junction Fe2O3/BiOI photocatalyst: Surface decoration of BiOI nanosheets with Fe2O3 nanoparticles

    Science.gov (United States)

    Mehraj, Owais; Pirzada, Bilal M.; Mir, Niyaz A.; Khan, Mohammad Zain; Sabir, Suhail

    2016-11-01

    Novel xFe2O3/yBiOI composites (x/y = 0.25, 0.35, 0.45 molar ratios) with a p-n heterojunction were prepared for the first time through an in situ hydrolysis method under solvothermal conditions. The phase structure, morphology and optical properties of the composites were studied using several characterization tools including X-ray diffraction (XRD), scanning electron microscopy (SEM), high resolution transmission electron microscopy (HRTEM), selected area electron diffraction (SAED), Fourier transform infrared (FTIR), N2 adsorption-desorption isotherms (BET) and UV-vis diffuse reflectance spectroscopy (UV-DRS). The characterization results suggest square shaped nanosheets of BiOI with Fe2O3 nanoparticles well distributed on the surface of BiOI nanosheets. The photodegradation performances of the xFe/yBi samples were investigated using aqueous solution of Rhodamine B (RhB) dye. The xFe/yBi composites displayed much higher photocatalytic efficiencies for RhB degradation than the single BiOI under visible light (λ > 400 nm). Specifically, the degradation rate of xFe/yBi samples at molar ratio of 0.35 is 4.24 times higher than single BiOI. The novel Fe2O3/BiOI heterojunction was found to be highly stable in cyclic experiments. Based on the results of BET, PL and DRS analysis, the enhanced photocatalytic efficiency can be mainly ascribed to the formation of stable p-n heterojunction between Fe2O3 and BiOI, which facilitates the transfer and separation of photogenerated electron-hole pairs.

  16. Cross-disease comparison of amyotrophic lateral sclerosis and spinal muscular atrophy reveals conservation of selective vulnerability but differential neuromuscular junction pathology.

    Science.gov (United States)

    Comley, Laura H; Nijssen, Jik; Frost-Nylen, Johanna; Hedlund, Eva

    2016-05-01

    Neuromuscular junctions are primary pathological targets in the lethal motor neuron diseases spinal muscular atrophy (SMA) and amyotrophic lateral sclerosis (ALS). Synaptic pathology and denervation of target muscle fibers has been reported prior to the appearance of clinical symptoms in mouse models of both diseases, suggesting that neuromuscular junctions are highly vulnerable from the very early stages, and are a key target for therapeutic intervention. Here we examined neuromuscular pathology longitudinally in three clinically relevant muscle groups in mouse models of ALS and SMA in order to assess their relative vulnerabilities. We show for the first time that neuromuscular junctions of the extraocular muscles (responsible for the control of eye movement) were resistant to degeneration in endstage SMA mice, as well as in late symptomatic ALS mice. Tongue muscle neuromuscular junctions were also spared in both animal models. Conversely, neuromuscular junctions of the lumbrical muscles of the hind-paw were vulnerable in both SMA and ALS, with a loss of neuronal innervation and shrinkage of motor endplates in both diseases. Thus, the pattern of selective vulnerability was conserved across these two models of motor neuron disease. However, the first evidence of neuromuscular pathology occurred at different timepoints of disease progression, with much earlier evidence of presynaptic involvement in ALS, progressing to changes on the postsynaptic side. Conversely, in SMA changes appeared concomitantly at the neuromuscular junction, suggesting that mechanisms of neuromuscular disruption are distinct in these diseases. J. Comp. Neurol. 524:1424-1442, 2016. © 2015 The Authors The Journal of Comparative Neurology Published by Wiley Periodicals, Inc. © 2015 The Authors The Journal of Comparative Neurology Published by Wiley Periodicals, Inc.

  17. Cross‐disease comparison of amyotrophic lateral sclerosis and spinal muscular atrophy reveals conservation of selective vulnerability but differential neuromuscular junction pathology

    Science.gov (United States)

    Nijssen, Jik; Frost‐Nylen, Johanna

    2015-01-01

    Neuromuscular junctions are primary pathological targets in the lethal motor neuron diseases spinal muscular atrophy (SMA) and amyotrophic lateral sclerosis (ALS). Synaptic pathology and denervation of target muscle fibers has been reported prior to the appearance of clinical symptoms in mouse models of both diseases, suggesting that neuromuscular junctions are highly vulnerable from the very early stages, and are a key target for therapeutic intervention. Here we examined neuromuscular pathology longitudinally in three clinically relevant muscle groups in mouse models of ALS and SMA in order to assess their relative vulnerabilities. We show for the first time that neuromuscular junctions of the extraocular muscles (responsible for the control of eye movement) were resistant to degeneration in endstage SMA mice, as well as in late symptomatic ALS mice. Tongue muscle neuromuscular junctions were also spared in both animal models. Conversely, neuromuscular junctions of the lumbrical muscles of the hind‐paw were vulnerable in both SMA and ALS, with a loss of neuronal innervation and shrinkage of motor endplates in both diseases. Thus, the pattern of selective vulnerability was conserved across these two models of motor neuron disease. However, the first evidence of neuromuscular pathology occurred at different timepoints of disease progression, with much earlier evidence of presynaptic involvement in ALS, progressing to changes on the postsynaptic side. Conversely, in SMA changes appeared concomitantly at the neuromuscular junction, suggesting that mechanisms of neuromuscular disruption are distinct in these diseases. J. Comp. Neurol. 524:1424–1442, 2016. © 2015 The Authors The Journal of Comparative Neurology Published by Wiley Periodicals, Inc. PMID:26502195

  18. A Novel Super-Junction Lateral Double-Diffused Metal-Oxide-Semiconductor Field Effect Transistor with n-Type Step Doping Buffer Layer

    Institute of Scientific and Technical Information of China (English)

    CHENG Jian-Bing; ZHANG Do; DUAN Bao-Xing; LI Zhao-Ji

    2008-01-01

    A novel super-junction lateral double-diffused metal-nxide-semiconductor field effect transistor(SJ-LDMOSFET)with n-type step doping buffer layer is proposed.The step doping buffer layer almost completely eliminates the substrate-assisted depletion effect.modulates lateral electric field and achieves nearly uniform surface field.On the other hand,the buffer layer also provides another conductive path and reduces on-state resistance.In short,the proposed LDMOSFET improves trade-off performance between breakdown voltage (BV)and specific on-state resistance Ron,sp.Compared with the conventional SJ-LDMOSFET,the simulation results indicate that the BV of the SSJ-LDMOSFET is increased from saturation voltage 121.7 V to 644.9 V;at the same time,the specific when the drift region length and the step number are taken as 48μm and 3,respectively.

  19. Value of the swimming position and arm traction in visualizing the cervicothoracic junction over the standard lateral cervical X-ray.

    Science.gov (United States)

    Toksoy, Aydin; Bektas, Firat; Eken, Cenker; Ceken, Kaan; Cete, Yildiray

    2010-03-23

    The cervicothoracic junction (CTJ) is often inadequately visualized on lateral cervical X-rays due to anatomic variations and technical factors. The aim of this study was to investigate whether the swimmer's view and arm traction could enhance the image field on the standard lateral cervical (SLC) X-ray. The study was conducted in a university hospital in October 2007 with 40 volunteers. SLC X-ray, lateral cervical X-ray in the swimming position, and lateral cervical X-ray with arm traction were performed in the supine position. The enhancements in the image fields were analyzed. There was a statistically significant difference for the increases in the view of cervical spines between SLC X-ray (12.60 +/- 7.48) and either lateral cervical X-ray with arm traction (21.73 +/- 9.78; p = 0.000) or in the swimming position (21.20 +/- 14.19; p = 0.001). Both arm traction and swimming position increased the field of view by approximately 9 mm. Increased visualization of the cervical spine occurred for 24 of the 40 participants using the arm traction view (60.0%) and 23 participants (57.5%) using the swimming position view-results found to be statistically similar according to the >/= 1/3 caudal vertebral height visualized (p = 0.902). Using the lateral cervical X-ray view, the number of cervical vertebrae visualized differed according to body mass index (BMI)-seven cervical vertebrae were visualized in participants with a BMI /= 25 (p = 0.007). Lateral cervical X-rays with arm traction and swimming position enhance the view of SLC X-rays. An initial SLC X-ray including the lower third of the cervical spine (with C7), arm traction, and swimming position may be beneficial in visualizing the CTJ. However, patients with an increased BMI are unlikely to benefit from all three methods.

  20. Study of recombination processes for 'electron-hole' pairs in germanium irradiated by {gamma} rays from {sup 60}Co using the photovoltaic effect in P-N junctions; Etude du processus de recombinaison des paires ''electron-trou'' dans le germanium irradie par les rayons {gamma} du cobalt 60 a l'aide de l'effet photovoltaique dans les jonctions P-N

    Energy Technology Data Exchange (ETDEWEB)

    Zahedi-Mochadam, A.A. [Commissariat a l' Energie Atomique, Saclay (France). Centre d' Etudes Nucleaires

    1964-10-01

    Using the photo-voltaic effect in p-n junctions, we have studied, during bombardment, the mechanism of the recombination of 'electron-hole' pairs in the presence of structure defects produced in germanium of the N and P types by {gamma} rays from a Co{sup 60} source. At 310 K the level of the recombination centres is situated 0.25 eV above the conduction band and the capture cross-sections of the holes and of the electrons have the respective values of: {sigma}{sub p} = 4 X 10{sup -15} cm{sup 2} and {sigma}{sub n} = 3 X 10{sup -15} cm{sup 2}. The value of {sigma}{sub n} appears to be under-estimated because the number of defects in P-type samples appears to be lower than that in N-type samples. These results lead to the conclusion that the interstitials are responsible for the recombination. At 80 K it has been found that in N-type samples, a shallow level exists at O.05 eV below the conduction band with a capture cross-section for the holes of {sigma}{sub p} {>=} 10{sup -14} cm{sup 2}. We believe that in this case the recombination of charge carriers is controlled by the neighbouring 'defect-interstitial' pairs. In P-type samples at low temperature, the life-time is practically constant during irradiation. This fact is attributed to a spontaneous annealing of defects ol purely electrical origin. In the last part of the work the study of the photo-voltaic effect applied to the problem of gamma radiation dosimetry is considered. It is shown that such dosimeters, based on this principle, make it possible to measure the intensity of gamma rays over a very wide range. (author) [French] En utilisant l'effet photovoltaique dans les jonctions p-n, nous avons etudie au cours du bombardement le mecanisme de recombinaison des paires 'electron-trou' en presence des defauts de structure introduits dans le germanium de type N et de type P par les rayons gamma d'une source de Co{sup 60}. A 310 K, le niveau des centres de recombinaison se

  1. Size effect on the magnetic and electronic properties of the monolayer lateral hetero-junction WS{sub 2}-MoS{sub 2} nanoribbon

    Energy Technology Data Exchange (ETDEWEB)

    Wen, Yan-Ni [Department of Applied Physics, School of Science, Xi’an Jiaotong University, Shaanxi 710049 (China); Ankang University, Ankang, 725000 Shannxi (China); Xia, Ming-Gang [Department of Applied Physics, School of Science, Xi’an Jiaotong University, Shaanxi 710049 (China); Department of Optical Information Science and Technology, School of Science, Xi’an Jiaotong University, 710049 (China); Zhang, Sheng-Li, E-mail: zhangsl@mail.xjtu.edu.cn [Department of Applied Physics, School of Science, Xi’an Jiaotong University, Shaanxi 710049 (China)

    2016-05-15

    Highlights: • The magnetic moment decreases in the order of N{sub z} = 2, 6 and 4 (the width of zigzag NRs) • The magnetic moment decreases with the increased r{sub z} (the number of the Mo-S chains,r{sub z} ≠ 0 and r{sub z} ≠ N{sub z}) at the same width N{sub z}. • The energy band varies with the increased N{sub A} (the width of armchair NRs) and r{sub A} (r{sub A} = 0∼ N{sub A}) at the same width N{sub A}. • The lowest band gap 0.150 eV and the highest one 0.581 eV can be obtained from the armchair WS2-MoS2 NRs, respectively. - Abstract: By using the VASP, we studied the magnetic and electronic properties of the monolayer lateral hetero-junction WS{sub 2}-MoS{sub 2}-nanoribbons (WS{sub 2}-MoS{sub 2}-NRs). Our results show that the NRs’ edge chirality and width affect significantly its magnetic and electronic properties. The monolayer lateral hetero-junction ZZ-WS{sub 2}-MoS{sub 2}-NRs(ZZ: zigzag) exhibitmetallic behavior and have considerable magnetic moment. Their magnetic moments decrease in the order of N{sub z} = 2, 6 and 4 (the width of NRs). While, the magnetic moment decreases with the increased r{sub z} (the number of the Mo-S chains, r{sub z} ≠ 0 and r{sub z} ≠ N{sub z}) at the same width N{sub z}. The N{sub A}-AC-WS{sub 2}-NR (AC: armchair) and N{sub A}-AC-WS{sub 2}-MoS{sub 2}-NR-1 (the number of the Mo-S chain is 1) show metallic behavior when N{sub A} = 3 (the width of NRs). The other monolayer lateral hetero-junction AC-WS{sub 2}-MoS{sub 2}-NRs remain the nonmagnetic and semiconductingbehavior as bulk. But they are indirect band-gap except for the N{sub A} = 3, r{sub A} = 2 (the number of the Mo-S chains) and N{sub A} = 7, r{sub A} = 0 when N{sub A} < 9. However they are direct band-gap when N{sub A} ≥ 9. Their lowest and highest band gaps are 0.150 eV and 0.581 eV, respectively. These unique magnetic and electronic properties will provide guidanceon the WS{sub 2}-MoS{sub 2} hetero-junction application in nanodevice.

  2. Effect of dorsal laminectomy and dorsal annulectomy with partial lumbosacral discectomy on the volume of the lateral intervertebral neuroforamina in dogs when the lumbosacral junction is extended.

    Science.gov (United States)

    Worth, Andrew J; Hartman, Angela; Bridges, Janis P; Jones, Boyd R; Mayhew, Joe I G

    2017-02-01

    To determine the effect of dorsal annulectomy and partial discectomy on the volume of the lumbosacral lateral intervertebral neurovascular foramina (intervertebral foramina) in canine cadavers during extension of the lumbosacral junction. Ex vivo experiment. Lumbosacral specimens from 10 large breed dogs euthanatized for reasons unrelated to lumbosacral disease. The lumbosacral specimens were clamped in a wooden jig and scanned using computed tomography (CT) with the lumbosacral junction in a neutral position and loaded in extension using a tensioning device. The 3-dimensional volumes of the lumbosacral intervertebral neurovascular foramina were measured and the extent of any disc degeneration was determined from the CT data. A limited dorsal laminectomy of S1 and a dorsal LS annulectomy and partial discectomy were then performed. The lumbosacral specimens were remounted into the jig and loaded into extension at the same tension and were re-scanned. Measurements of intervertebral foraminal volume were then repeated. The mean volume of the lumbosacral foramina (n = 20) was 381 mm(3) in neutral (unloaded) positioning and 137 mm(3) when loaded in extension. Following dorsal annulectomy, the mean volume was significantly reduced by a mean of 28% to 98 mm(3) (P < .01). The foraminal volume was reduced in 19/20 lumbosacral foramen, with the post-annulectomy volume ranging from 31% to 97% of the pre-annulectomy volume (3%-69% reduction). This study suggests that a dorsal annulectomy with partial discectomy may induce further dynamic collapse of the lumbosacral articulation in the dog. © 2017 The American College of Veterinary Surgeons.

  3. Evolution of the Rodgers Creek–Maacama right-lateral fault system and associated basins east of the northward-migrating Mendocino Triple Junction, northern California

    Science.gov (United States)

    McLaughlin, Robert J.; Sarna-Wojcicki, Andrei M.; Wagner, David L.; Fleck, Robert J.; Langenheim, V.E.; Jachens, Robert C.; Clahan, Kevin; Allen, James R.

    2012-01-01

    The Rodgers Creek–Maacama fault system in the northern California Coast Ranges (United States) takes up substantial right-lateral motion within the wide transform boundary between the Pacific and North American plates, over a slab window that has opened northward beneath the Coast Ranges. The fault system evolved in several right steps and splays preceded and accompanied by extension, volcanism, and strike-slip basin development. Fault and basin geometries have changed with time, in places with younger basins and faults overprinting older structures. Along-strike and successional changes in fault and basin geometry at the southern end of the fault system probably are adjustments to frequent fault zone reorganizations in response to Mendocino Triple Junction migration and northward transit of a major releasing bend in the northern San Andreas fault. The earliest Rodgers Creek fault zone displacement is interpreted to have occurred ca. 7 Ma along extensional basin-forming faults that splayed northwest from a west-northwest proto-Hayward fault zone, opening a transtensional basin west of Santa Rosa. After ca. 5 Ma, the early transtensional basin was compressed and extensional faults were reactivated as thrusts that uplifted the northeast side of the basin. After ca. 2.78 Ma, the Rodgers Creek fault zone again splayed from the earlier extensional and thrust faults to steeper dipping faults with more north-northwest orientations. In conjunction with the changes in orientation and slip mode, the Rodgers Creek fault zone dextral slip rate increased from ∼2–4 mm/yr 7–3 Ma, to 5–8 mm/yr after 3 Ma. The Maacama fault zone is shown from several data sets to have initiated ca. 3.2 Ma and has slipped right-laterally at ∼5–8 mm/yr since its initiation. The initial Maacama fault zone splayed northeastward from the south end of the Rodgers Creek fault zone, accompanied by the opening of several strike-slip basins, some of which were later uplifted and compressed

  4. Energy backtransfer and infrared photoresponse in erbium-doped silicon p-n diodes

    NARCIS (Netherlands)

    Hamelin, N.; Kik, P.G.; Suyver, J.F.; Kikoin, K.; Polman, A.; Schönecker, A.; Saris, F.W.

    2001-01-01

    Temperature-dependent measurements of the photoluminescence (PL) intensity, PL lifetime, and infrared photocurrent, were performed on an erbium-implanted silicon p - n junction in order to investigate the energy transfer processes between the silicon electronic system and the Er 4 f energy levels. T

  5. Energy backtransfer and infrared photoresponse in erbium-doped silicon p-n diodes

    NARCIS (Netherlands)

    Hamelin, N.; Kik, P.G.; Suyver, J.F.; Kikoin, K.; Polman, A.; Schönecker, A.; Saris, F.W.

    2000-01-01

    Temperature-dependent measurements of the photoluminescence (PL) intensity, PL lifetime, and infrared photocurrent, were performed on an erbium-implanted silicon p - n junction in order to investigate the energy transfer processes between the silicon electronic system and the Er 4 f energy levels. T

  6. Semi-automatic delineation of the spino-laminar junction curve on lateral x-ray radiographs of the cervical spine

    Science.gov (United States)

    Narang, Benjamin; Phillips, Michael; Knapp, Karen; Appelboam, Andy; Reuben, Adam; Slabaugh, Greg

    2015-03-01

    Assessment of the cervical spine using x-ray radiography is an important task when providing emergency room care to trauma patients suspected of a cervical spine injury. In routine clinical practice, a physician will inspect the alignment of the cervical spine vertebrae by mentally tracing three alignment curves along the anterior and posterior sides of the cervical vertebral bodies, as well as one along the spinolaminar junction. In this paper, we propose an algorithm to semi-automatically delineate the spinolaminar junction curve, given a single reference point and the corners of each vertebral body. From the reference point, our method extracts a region of interest, and performs template matching using normalized cross-correlation to find matching regions along the spinolaminar junction. Matching points are then fit to a third order spline, producing an interpolating curve. Experimental results demonstrate promising results, on average producing a modified Hausdorff distance of 1.8 mm, validated on a dataset consisting of 29 patients including those with degenerative change, retrolisthesis, and fracture.

  7. Value of the swimming position and arm traction in visualizing the cervicothoracic junction over the standard lateral cervical X-ray

    National Research Council Canada - National Science Library

    Toksoy, Aydin; Bektas, Firat; Eken, Cenker; Ceken, Kaan; Cete, Yildiray

    2010-01-01

    .... The study was conducted in a university hospital in October 2007 with 40 volunteers. SLC X-ray, lateral cervical X-ray in the swimming position, and lateral cervical X-ray with arm traction were performed in the supine position...

  8. A highly efficient visible-light-driven novel p-n junction Fe{sub 2}O{sub 3}/BiOI photocatalyst: Surface decoration of BiOI nanosheets with Fe{sub 2}O{sub 3} nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Mehraj, Owais; Pirzada, Bilal M.; Mir, Niyaz A.; Khan, Mohammad Zain; Sabir, Suhail, E-mail: sabirsuhail09@gmail.com

    2016-11-30

    Highlights: • BiOI/Fe{sub 2}O{sub 3}p-n heterojunctions were synthesized through an in-situ hydrolysis method under solvothermal conditions. • BiOI/Fe{sub 2}O{sub 3}p-n heterojunctions showed enhanced visible light activity than single BiOI. • BiOI/Fe{sub 2}O{sub 3}p-n heterojunctions showed improved stability than pure BiOI nanosheets. - Abstract: Novel xFe{sub 2}O{sub 3}/yBiOI composites (x/y = 0.25, 0.35, 0.45 molar ratios) with a p-n heterojunction were prepared for the first time through an in situ hydrolysis method under solvothermal conditions. The phase structure, morphology and optical properties of the composites were studied using several characterization tools including X-ray diffraction (XRD), scanning electron microscopy (SEM), high resolution transmission electron microscopy (HRTEM), selected area electron diffraction (SAED), Fourier transform infrared (FTIR), N{sub 2} adsorption-desorption isotherms (BET) and UV–vis diffuse reflectance spectroscopy (UV-DRS). The characterization results suggest square shaped nanosheets of BiOI with Fe{sub 2}O{sub 3} nanoparticles well distributed on the surface of BiOI nanosheets. The photodegradation performances of the xFe/yBi samples were investigated using aqueous solution of Rhodamine B (RhB) dye. The xFe/yBi composites displayed much higher photocatalytic efficiencies for RhB degradation than the single BiOI under visible light (λ > 400 nm). Specifically, the degradation rate of xFe/yBi samples at molar ratio of 0.35 is 4.24 times higher than single BiOI. The novel Fe{sub 2}O{sub 3}/BiOI heterojunction was found to be highly stable in cyclic experiments. Based on the results of BET, PL and DRS analysis, the enhanced photocatalytic efficiency can be mainly ascribed to the formation of stable p-n heterojunction between Fe{sub 2}O{sub 3} and BiOI, which facilitates the transfer and separation of photogenerated electron-hole pairs.

  9. Efficient prediction of (p,n) yields

    Energy Technology Data Exchange (ETDEWEB)

    Swift, D C; McNaney, J M; Higginson, D P; Beg, F

    2009-09-09

    In the continuous deceleration approximation, charged particles decelerate without any spread in energy as they traverse matter. This approximation simplifies the calculation of the yield of nuclear reactions, for which the cross-section depends on the particle energy. We calculated (p,n) yields for a LiF target, using the Bethe-Bloch relation for proton deceleration, and predicted that the maximum yield would be around 0.25% neutrons per incident proton, for an initial proton energy of 70 MeV or higher. Yield-energy relations calculated in this way can readily be used to optimize source and (p,n) converter characteristics.

  10. Microsurgical anatomy related to craniocervical junction segment of the vertebral artery in far lateral approach%寰枢段椎动脉在远外侧入路中的应用显微解剖研究

    Institute of Scientific and Technical Information of China (English)

    贾旺; 毕智勇; 鲁润春; 于春江

    2013-01-01

    Objective Microsurgical anatomy of craniocervical junction (CCJ) segment of the vertebral artery (VA) were studied to provide an applied anatomic basis for the far lateral approach.Methods Simulated operation of far lateral approach was performed on 10 cadaveric heads specimens and 10 dry skulls for measurment of the osseous relationships in the region.Results Craniocervical junction segment of the vertebral artery has five curvatures in most of the specimens,and compensatory vascular expansion in the curvatures was found.The average diameter is (4.3 ± 0.5) mm with changeful direction.The average half length of posterior arch of atlas is (19.3 ±4.7) mm,also the safe extent for exposing vertebral artery.Conclusions The key points to successfully preserve vertebral artery in far lateral approach are familiarity with the microanatomical relationship of craniocervical junction segment of the vertebral artery,especially the five curvatures.%目的 为颅颈交界区手术入路提供解剖学参数,帮助神经外科医生安全、准确地暴露手术靶区.方法 应用10%甲醛固定的汉族成人尸头标本10例20侧;漂白干颅骨及寰枢椎10例20侧.模拟手术入路逐层解剖,并对解剖结构进行精确测量和拍照.结果 寰枢段椎动脉在颅颈交界区形成比较恒定的五个生理弯曲,平均直径(4.3±0.5) mm,角度多变.寰椎后弓外侧半距(19.3±4.7)mm.结论 熟悉寰枢段椎动脉五个生理弯曲的定位方法,有助于提高颅颈交界区手术入路的安全性.

  11. Spin Injection, Transport, and Detection at Room Temperature in a Lateral Spin Transport Device with Co2FeAl0.5Si0.5/n-GaAs Schottky Tunnel Junctions

    Science.gov (United States)

    Saito, Tatsuya; Tezuka, Nobuki; Matsuura, Masashi; Sugimoto, Satoshi

    2013-10-01

    We observed spin-valve signals and Hanle signals in four-terminal nonlocal measurements on a lateral spin transport device with Co2FeAl0.5Si0.5(CFAS)/n-GaAs Schottky tunnel junctions. The estimated spin injection/detection efficiency was 0.06 at 4.2 K, which is larger than those of the devices with Fe and CoFe electrodes [Nature Physics 3 (2007) 197 and Appl. Phys. Lett. 99 (2011) 082108]. The spin diffusion length estimated from Hanle signals was consistent with the gap length dependency of the spin-valve signals. Furthermore, the spin-valve signals were observed at up to 290 K. This is the first demonstration of detecting spin accumulation in semiconductor with full-Heusler alloys electrodes at room temperature.

  12. A Laminin G-EGF-Laminin G module in Neurexin IV is essential for the apico-lateral localization of Contactin and organization of septate junctions.

    Directory of Open Access Journals (Sweden)

    Swati Banerjee

    Full Text Available Septate junctions (SJs display a unique ultrastructural morphology with ladder-like electron densities that are conserved through evolution. Genetic and molecular analyses have identified a highly conserved core complex of SJ proteins consisting of three cell adhesion molecules Neurexin IV, Contactin, and Neuroglian, which interact with the cytoskeletal FERM domain protein Coracle. How these individual proteins interact to form the septal arrays that create the paracellular barrier is poorly understood. Here, we show that point mutations that map to specific domains of neurexin IV lead to formation of fewer septae and disorganization of SJs. Consistent with these observations, our in vivo domain deletion analyses identified the first Laminin G-EGF-Laminin G module in the extracellular region of Neurexin IV as necessary for the localization of and association with Contactin. Neurexin IV protein that is devoid of its cytoplasmic region is able to create septae, but fails to form a full complement of SJs. These data provide the first in vivo evidence that specific domains in Neurexin IV are required for protein-protein interactions and organization of SJs. Given the molecular conservation of SJ proteins across species, our studies may provide insights into how vertebrate axo-glial SJs are organized in myelinated axons.

  13. Photovoltaic characteristics of diffused P/+N bulk GaAs solar cells

    Science.gov (United States)

    Borrego, J. M.; Keeney, R. P.; Bhat, I. B.; Bhat, K. N.; Sundaram, L. G.; Ghandhi, S. K.

    1982-01-01

    The photovoltaic characteristics of P(+)N junction solar cells fabricated on bulk GaAs by an open tube diffusion technique are described in this paper.Spectral response measurements were analyzed in detail and compared to a computer simulation in order to determine important material parameters. It is projected that proper optimization of the cell parameters can increase the efficiency of the cells from 12.2 percent to close to 20 percent.

  14. Template method for fabricating interdigitate p-n heterojunction for organic solar cell

    OpenAIRE

    Hu, Jianchen; Shirai, Yasuhiro; Han, Liyuan; Wakayama, Yutaka

    2012-01-01

    Anodic aluminum oxide (AAO) templates are used to fabricate arrays of poly(3-hexylthiophene) (P3HT) pillars. This technique makes it possible to control the dimensions of the pillars, namely their diameters, intervals, and heights, on a tens-of-nanometer scale. These features are essential for enhancing carrier processes such as carrier generation, exciton diffusion, and carrier dissociation and transport. An interdigitated p-n junction between P3HT pillars and fullerene (C60) exhibits a phot...

  15. Gap Junctions

    Science.gov (United States)

    Nielsen, Morten Schak; Axelsen, Lene Nygaard; Sorgen, Paul L.; Verma, Vandana; Delmar, Mario; Holstein-Rathlou, Niels-Henrik

    2013-01-01

    Gap junctions are essential to the function of multicellular animals, which require a high degree of coordination between cells. In vertebrates, gap junctions comprise connexins and currently 21 connexins are known in humans. The functions of gap junctions are highly diverse and include exchange of metabolites and electrical signals between cells, as well as functions, which are apparently unrelated to intercellular communication. Given the diversity of gap junction physiology, regulation of gap junction activity is complex. The structure of the various connexins is known to some extent; and structural rearrangements and intramolecular interactions are important for regulation of channel function. Intercellular coupling is further regulated by the number and activity of channels present in gap junctional plaques. The number of connexins in cell-cell channels is regulated by controlling transcription, translation, trafficking, and degradation; and all of these processes are under strict control. Once in the membrane, channel activity is determined by the conductive properties of the connexin involved, which can be regulated by voltage and chemical gating, as well as a large number of posttranslational modifications. The aim of the present article is to review our current knowledge on the structure, regulation, function, and pharmacology of gap junctions. This will be supported by examples of how different connexins and their regulation act in concert to achieve appropriate physiological control, and how disturbances of connexin function can lead to disease. © 2012 American Physiological Society. Compr Physiol 2:1981-2035, 2012. PMID:23723031

  16. Gap junctions.

    Science.gov (United States)

    Nielsen, Morten Schak; Axelsen, Lene Nygaard; Sorgen, Paul L; Verma, Vandana; Delmar, Mario; Holstein-Rathlou, Niels-Henrik

    2012-07-01

    Gap junctions are essential to the function of multicellular animals, which require a high degree of coordination between cells. In vertebrates, gap junctions comprise connexins and currently 21 connexins are known in humans. The functions of gap junctions are highly diverse and include exchange of metabolites and electrical signals between cells, as well as functions, which are apparently unrelated to intercellular communication. Given the diversity of gap junction physiology, regulation of gap junction activity is complex. The structure of the various connexins is known to some extent; and structural rearrangements and intramolecular interactions are important for regulation of channel function. Intercellular coupling is further regulated by the number and activity of channels present in gap junctional plaques. The number of connexins in cell-cell channels is regulated by controlling transcription, translation, trafficking, and degradation; and all of these processes are under strict control. Once in the membrane, channel activity is determined by the conductive properties of the connexin involved, which can be regulated by voltage and chemical gating, as well as a large number of posttranslational modifications. The aim of the present article is to review our current knowledge on the structure, regulation, function, and pharmacology of gap junctions. This will be supported by examples of how different connexins and their regulation act in concert to achieve appropriate physiological control, and how disturbances of connexin function can lead to disease. © 2012 American Physiological Society. Compr Physiol 2:1853-1872, 2012.

  17. The ZnO p-n homojunctions modulated by ZnMgO barriers

    Directory of Open Access Journals (Sweden)

    Jing-Jing Yang

    2015-04-01

    Full Text Available In this paper, we fabricated the ultrathin ZnO p-n homojunctions, which modulated by ZnMgO asymmetrical double barriers (ADB. The ADB p-n homojunctions displays step-like curve in the absorption spectrums, this is the first time that quantum confinement effect has been observed in the absorption spectrums at room temperature (RT. The Hall-effect data confirm there is 2-dimensional electron gas in the interface of the ZnMgO ADB p-n junctions. The quantum confinement effect enhances the hall-mobility μ to 103 cm2V −1s−1 based on the polarity of the films. There was no rectification property in the ZnO homojunctions with thickness of 250nm, however, when the ADB was added in the n-type layer of the homojunctions, it displays a typical Zener diode rectification property in the I-V curve.

  18. The ZnO p-n homojunctions modulated by ZnMgO barriers

    Science.gov (United States)

    Yang, Jing-Jing; Fang, Qing-Qing; Wang, Dan-Dan; Du, Wen-Han

    2015-04-01

    In this paper, we fabricated the ultrathin ZnO p-n homojunctions, which modulated by ZnMgO asymmetrical double barriers (ADB). The ADB p-n homojunctions displays step-like curve in the absorption spectrums, this is the first time that quantum confinement effect has been observed in the absorption spectrums at room temperature (RT). The Hall-effect data confirm there is 2-dimensional electron gas in the interface of the ZnMgO ADB p-n junctions. The quantum confinement effect enhances the hall-mobility μ to 103 cm2V -1s-1 based on the polarity of the films. There was no rectification property in the ZnO homojunctions with thickness of 250nm, however, when the ADB was added in the n-type layer of the homojunctions, it displays a typical Zener diode rectification property in the I-V curve.

  19. SiC merged p-n/Schottky rectifiers for high voltage applications

    Energy Technology Data Exchange (ETDEWEB)

    Held, R.; Kaminski, N.; Niemann, E. [Daimler-Benz AG, Frankfurt am Main (Germany). Forschung und Technik

    1998-08-01

    A method of reducing reverse currents and increasing breakdown voltages without inducing negative effects on switching behavior in silicon carbide Schottky diodes is proved successfully. Implantation of p-regions in the surface of the n-drift region below the Schottky metal form face to face p-n junctions which screen the Schottky contact from high electrical fields. This results in a reduction of the reverse current and an increase of the breakdown voltage to the limit of a `pure` SiC p-n diode. It is shown, that in contrast to silicon based devices, SiC merged p-n/Schottky (MPS) rectifier preserve their excellent unipolar switching behavior. (orig.) 5 refs.

  20. Titanium-dioxide nanotube p-n homojunction diode

    Energy Technology Data Exchange (ETDEWEB)

    Alivov, Yahya, E-mail: y.alivov@colorado.edu, E-mail: pnagpal@colorado.edu; Ding, Yuchen; Singh, Vivek [Department of Chemical and Biological Engineering, University of Colorado Boulder, 3415 Colorado Avenue, Boulder, Colorado 80303 (United States); Nagpal, Prashant, E-mail: y.alivov@colorado.edu, E-mail: pnagpal@colorado.edu [Department of Chemical and Biological Engineering, University of Colorado Boulder, 3415 Colorado Avenue, Boulder, Colorado 80303 (United States); Materials Science and Engineering, University of Colorado Boulder, 3415 Colorado Avenue, Boulder, Colorado 80303 (United States); Renewable and Sustainable Energy Institute, University of Colorado Boulder, 2445 Kittredge Loop, Boulder, Colorado 80309 (United States)

    2014-12-29

    Application of semiconductors in functional optoelectronic devices requires precise control over their doping and formation of junction between p- and n-doped semiconductors. While doped thin films have led to several semiconductor devices, need for high-surface area nanostructured devices for photovoltaic, photoelectrochemical, and photocatalytic applications has been hindered by lack of desired doping in nanostructures. Here, we show titanium-dioxide (TiO{sub 2}) nanotubes doped with nitrogen (N) and niobium (Nb) as acceptors and donors, respectively, and formation of TiO{sub 2} nanotubes p-n homojunction. This TiO{sub 2}:N/TiO{sub 2}:Nb homojunction showed distinct diode-like behaviour with rectification ratio of 1115 at ±5 V and exhibited good photoresponse for ultraviolet light (λ = 365 nm) with sensitivity of 0.19 A/W at reverse bias of −5 V. These results can have important implications for development of nanostructured metal-oxide solar-cells, photodiodes, LED's, photocatalysts, and photoelectrochemical devices.

  1. [Remodeling of cardiac gap junctions and arrhythmias].

    Science.gov (United States)

    Yu, Zhi-Bin; Sheng, Juan-Juan

    2011-12-25

    In the heart, gap junctions mediate electrical and chemical coupling between adjacent cardiomyocytes, forming the cell-to-cell pathways for orderly spread of the wave of electrical excitation responsible for a functional syncytium. Three principal connexins are expressed in cardiomyocytes, connexin 43 (CX43), CX40, and CX45. CX43 predominates in ventricular muscle cells. Most of the gap junctions, assembled from CX43, are located at the intercalated discs, often with larger junctional plaques at the disc periphery. The gap junctions are rarely distributed to the sides of the cardiomyocyte. The ischemia-reperfusion, cardiac hypertrophy, heart failure, hypercholesterolemia, and diabetes mellitus induce gap junction remodeling. The gap junction remodeling induced by above-mentioned diseases shows similar characteristics, including down-regulation of CX43, reduction in gap junction plaque size, increased heterogeneity and lateralization of gap junction distribution, and dephosphorylation of CX43. The elevated angiotensin II concentration in local myocardium may play an important role in the gap junction remodeling. The down-regulation of CX43 and lateralization of gap junction distribution alter anisotropic spread of the impulse of ventricular myocardium. The dephosphorylation of CX43 not only reduces electrical conductance, but also decreases permeability of chemicals between cardiomyocytes. The lateralization of gap junctions may increase the number of hemichannels formed by CX43. The opening of hemichannels induces ATP efflux and Na(+) influx, which forms a delayed after-depolarization. The gap junction remodeling in pathological condition produces arrhythmia substrate in the ventricles. In this review, the current knowledge on the relationship between the remodeling of cardiac gap junctions and arrhythmias were summarized.

  2. Metallic Junction Thermoelectric Device Simulations

    Science.gov (United States)

    Duzik, Adam J.; Choi, Sang H.

    2017-01-01

    Thermoelectric junctions made of semiconductors have existed in radioisotope thermoelectric generators (RTG) for deep space missions, but are currently being adapted for terrestrial energy harvesting. Unfortunately, these devices are inefficient, operating at only 7% efficiency. This low efficiency has driven efforts to make high-figure-of-merit thermoelectric devices, which require a high electrical conductivity but a low thermal conductivity, a combination that is difficult to achieve. Lowered thermal conductivity has increased efficiency, but at the cost of power output. An alternative setup is to use metallic junctions rather than semiconductors as thermoelectric devices. Metals have orders of magnitude more electrons and electronic conductivities higher than semiconductors, but thermal conductivity is higher as well. To evaluate the viability of metallic junction thermoelectrics, a two dimensional heat transfer MATLAB simulation was constructed to calculate efficiency and power output. High Seebeck coefficient alloys, Chromel (90%Ni-10%Cr) and Constantan (55%Cu-45%Ni), produced efficiencies of around 20-30%. Parameters such as the number of layers of junctions, lateral junction density, and junction sizes for both series- and parallel-connected junctions were explored.

  3. Gas Sensors Based on Ceramic p-n Heterocontacts

    Energy Technology Data Exchange (ETDEWEB)

    Seymen Murat Aygun

    2004-12-19

    Ceramic p-n heterocontacts based on CuO/ZnO were successfully synthesized and a systematic study of their hydrogen sensitivity was conducted. The sensitivity and response rates of CuO/ZnO sensors were studied utilizing current-voltage, current-time, and impedance spectroscopy measurements. The heterocontacts showed well-defined rectifying characteristics and were observed to detect hydrogen via both dc and ac measurements. Surface coverage data were derived from current-time measurements which were then fit to a two-site Langmuir adsorption model quite satisfactorily. The fit suggested that there should be two energetically different adsorption sites in the system. The heterocontacts were doped in an attempt to increase the sensitivity and the response rate of the sensor. First, the effects of doping the p-type (CuO) on the sensor characteristics were investigated. Doping the p-type CuO with both acceptor and isovalent dopants greatly improved the hydrogen sensitivity. The sensitivity of pure heterocontact observed via I-V measurements was increased from {approx}2.3 to {approx}9.4 with Ni doping. Dopants also enhanced the rectifying characteristics of the heterocontacts. Small amounts of Li addition were shown to decrease the reverse bias (saturation) current to 0.2 mA at a bias level of -5V. No unambiguous trends were observed between the sensitivity, the conductivity, and the density of the samples. Comparing the two phase microstructure to the single phase microstructure there was no dramatic increase in the sensitivity. Kinetic studies also confirmed the improved sensor characteristics with doping. The dopants decreased the response time of the sensor by decreasing the response time of one of the adsorption sites. The n-type ZnO was doped with both acceptor and donor dopants. Li doping resulted in the degradation of the p-n junction and the response time of the sensor. However, the current-voltage behavior of Ga-doped heterocontacts showed the best rectifying

  4. Gas Sensors Based on Ceramic p-n Heterocontacts

    Energy Technology Data Exchange (ETDEWEB)

    Aygun, Seymen Murat [Iowa State Univ., Ames, IA (United States)

    2005-01-01

    Ceramic p-n heterocontacts based on CuO/ZnO were successfully synthesized and a systematic study of their hydrogen sensitivity was conducted. The sensitivity and response rates of CuO/ZnO sensors were studied utilizing current-voltage, current-time, and impedance spectroscopy measurements. The heterocontacts showed well-defined rectifying characteristics and were observed to detect hydrogen via both dc and ac measurements. Surface coverage data were derived from current-time measurements which were then fit to a two-site Langmuir adsorption model quite satisfactorily. The fit suggested that there should be two energetically different adsorption sites in the system. The heterocontacts were doped in an attempt to increase the sensitivity and the response rate of the sensor. First, the effects of doping the p-type (CuO) on the sensor characteristics were investigated. Doping the p-type CuO with both acceptor and isovalent dopants greatly improved the hydrogen sensitivity. The sensitivity of pure heterocontact observed via I-V measurements was increased from ~2.3 to ~9.4 with Ni doping. Dopants also enhanced the rectifying characteristics of the heterocontacts. Small amounts of Li addition were shown to decrease the reverse bias (saturation) current to 0.2 mA at a bias level of -5V. No unambiguous trends were observed between the sensitivity, the conductivity, and the density of the samples. Comparing the two phase microstructure to the single phase microstructure there was no dramatic increase in the sensitivity. Kinetic studies also confirmed the improved sensor characteristics with doping. The dopants decreased the response time of the sensor by decreasing the response time of one of the adsorption sites. The n-type ZnO was doped with both acceptor and donor dopants. Li doping resulted in the degradation of the p-n junction and the response time of the sensor. However, the current-voltage behavior of Ga-doped heterocontacts showed the best rectifying characteristics

  5. Polarization-sensitive broadband photodetector using a black phosphorus vertical p-n junction.

    Science.gov (United States)

    Yuan, Hongtao; Liu, Xiaoge; Afshinmanesh, Farzaneh; Li, Wei; Xu, Gang; Sun, Jie; Lian, Biao; Curto, Alberto G; Ye, Guojun; Hikita, Yasuyuki; Shen, Zhixun; Zhang, Shou-Cheng; Chen, Xianhui; Brongersma, Mark; Hwang, Harold Y; Cui, Yi

    2015-08-01

    The ability to detect light over a broad spectral range is central to practical optoelectronic applications and has been successfully demonstrated with photodetectors of two-dimensional layered crystals such as graphene and MoS2. However, polarization sensitivity within such a photodetector remains elusive. Here, we demonstrate a broadband photodetector using a layered black phosphorus transistor that is polarization-sensitive over a bandwidth from ∼400 nm to 3,750 nm. The polarization sensitivity is due to the strong intrinsic linear dichroism, which arises from the in-plane optical anisotropy of this material. In this transistor geometry, a perpendicular built-in electric field induced by gating can spatially separate the photogenerated electrons and holes in the channel, effectively reducing their recombination rate and thus enhancing the performance for linear dichroism photodetection. The use of anisotropic layered black phosphorus in polarization-sensitive photodetection might provide new functionalities in novel optical and optoelectronic device applications.

  6. Quantum Tunneling Model of a P-N Junction in Silvaco

    Science.gov (United States)

    2008-09-01

    September 1-5, 2008. [14] M. Shur, Physics of Semiconductor Devices, Prentice–Hall, Inc, 1990. [15] R. P. Feynman , The Feynman Lectures on Physics , Volume... physically based 2-D model was created in Silvaco Inc.’s ATLAS© software to model the quantum tunneling effect that is realized within a multi...photovoltaic cell. A physically based 2-D model was created in Silvaco Inc.’s software to model the quantum tunneling effect that is realized within a

  7. The Pedagogy of the p-n Junction: Diffusion or Drift?

    OpenAIRE

    Kasap, S. O.; Tannous, C.

    2003-01-01

    The majority of current textbooks on device physics at the undergraduate level derive the diode equation based on the diffusion of injected minority carriers. Generally the drift of the majority carriers, or the extent of drift, is not discussed and the importance of drift in the presence of a field in the neutral regions is almost totally ignored. The assumptions of zero field in the neutral regions and conduction by minority carrier diffusion lead to a number of pedagogical problems and par...

  8. Optical signature of Weyl electronic structures in tantalum pnictides Ta P n (P n = P, As)

    Science.gov (United States)

    Kimura, Shin-ichi; Yokoyama, Hiroko; Watanabe, Hiroshi; Sichelschmidt, Jörg; Süß, Vicky; Schmidt, Marcus; Felser, Claudia

    2017-08-01

    To investigate the electronic structure of Weyl semimetals Ta P n (P n = P, As), optical conductivity [σ (ω )] spectra are measured over a wide range of photon energies and temperatures, and these measured values are compared with band calculations. Two significant structures can be observed: a bending structure at ℏ ω ˜85 meV in TaAs, and peaks at ℏ ω ˜ 50 meV (TaP) and ˜30 meV (TaAs). The bending structure can be explained by the interband transition between saddle points connecting a set of W2 Weyl points. The temperature dependence of the peak intensity can be fitted by assuming the interband transition between saddle points connecting a set of W1 Weyl points. Owing to the different temperature dependence of the Drude weight in both materials, it is found that the Weyl points of TaAs are located near the Fermi level, whereas those of TaP are further away.

  9. Solar-energy conversion and light emission in an atomic monolayer p-n diode.

    Science.gov (United States)

    Pospischil, Andreas; Furchi, Marco M; Mueller, Thomas

    2014-04-01

    The limitations of the bulk semiconductors currently used in electronic devices-rigidity, heavy weight and high costs--have recently shifted the research efforts to two-dimensional atomic crystals such as graphene and atomically thin transition-metal dichalcogenides. These materials have the potential to be produced at low cost and in large areas, while maintaining high material quality. These properties, as well as their flexibility, make two-dimensional atomic crystals attractive for applications such as solar cells or display panels. The basic building blocks of optoelectronic devices are p-n junction diodes, but they have not yet been demonstrated in a two-dimensional material. Here, we report a p-n junction diode based on an electrostatically doped tungsten diselenide (WSe2) monolayer. We present applications as a photovoltaic solar cell, a photodiode and a light-emitting diode, and obtain light-power conversion and electroluminescence efficiencies of ∼ 0.5% and ∼ 0.1%, respectively. Given recent advances in the large-scale production of two-dimensional crystals, we expect them to profoundly impact future developments in solar, lighting and display technologies.

  10. Chemically fixed p-n heterojunctions for polymer electronics by means of covalent B-F bond formation

    Science.gov (United States)

    Hoven, Corey V.; Wang, Huiping; Elbing, Mark; Garner, Logan; Winkelhaus, Daniel; Bazan, Guillermo C.

    2010-03-01

    Widely used solid-state devices fabricated with inorganic semiconductors, including light-emitting diodes and solar cells, derive much of their function from the p-n junction. Such junctions lead to diode characteristics and are attained when p-doped and n-doped materials come into contact with each other. Achieving bilayer p-n junctions with semiconducting polymers has been hindered by difficulties in the deposition of thin films with independent p-doped and n-doped layers. Here we report on how to achieve permanently fixed organic p-n heterojunctions by using a cationic conjugated polyelectrolyte with fluoride counteranions and an underlayer composed of a neutral conjugated polymer bearing anion-trapping functional groups. Application of a bias leads to charge injection and fluoride migration into the neutral layer, where irreversible covalent bond formation takes place. After the initial charging and doping, one obtains devices with no delay in the turn on of light-emitting electrochemical behaviour and excellent current rectification. Such devices highlight how mobile ions in organic media can open opportunities to realize device structures in ways that do not have analogies in the world of silicon and promise new opportunities for integrating organic materials within technologies now dominated by inorganic semiconductors.

  11. The ZnO p-n homojunctions modulated by ZnMgO barriers

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Jing-Jing, E-mail: 458089431@qq.com [Physics school, Anhui University, Jiulong street 111, Hefei 230601 (China); Science school, Changzhou institute of technology, Wushan street 1, Changzhou 213002 (China); Fang, Qing-Qing, E-mail: physfangqq@126.com; Wang, Dan-Dan [Physics school, Anhui University, Jiulong street 111, Hefei 230601 (China); Du, Wen-Han [Science school, Changzhou institute of technology, Wushan street 1, Changzhou 213002 (China)

    2015-04-15

    In this paper, we fabricated the ultrathin ZnO p-n homojunctions, which modulated by ZnMgO asymmetrical double barriers (ADB). The ADB p-n homojunctions displays step-like curve in the absorption spectrums, this is the first time that quantum confinement effect has been observed in the absorption spectrums at room temperature (RT). The Hall-effect data confirm there is 2-dimensional electron gas in the interface of the ZnMgO ADB p-n junctions. The quantum confinement effect enhances the hall-mobility μ to 10{sup 3} cm{sup 2}V {sup −1}s{sup −1} based on the polarity of the films. There was no rectification property in the ZnO homojunctions with thickness of 250nm, however, when the ADB was added in the n-type layer of the homojunctions, it displays a typical Zener diode rectification property in the I-V curve.

  12. 19th Scientific Readings Devoted to P.N. Chirvinskiy

    Directory of Open Access Journals (Sweden)

    I. Ya. Ilaltdinov

    2017-03-01

    Full Text Available Scientific conference devoted to P.N. Chirvinskiy was held in the Perm State University (January 2017. The problems of mineralogy, petrology, lithology, metallogeny and geochemistry were discussed.

  13. Template method for fabricating interdigitate p-n heterojunction for organic solar cell

    Science.gov (United States)

    Hu, Jianchen; Shirai, Yasuhiro; Han, Liyuan; Wakayama, Yutaka

    2012-08-01

    Anodic aluminum oxide (AAO) templates are used to fabricate arrays of poly(3-hexylthiophene) (P3HT) pillars. This technique makes it possible to control the dimensions of the pillars, namely their diameters, intervals, and heights, on a tens-of-nanometer scale. These features are essential for enhancing carrier processes such as carrier generation, exciton diffusion, and carrier dissociation and transport. An interdigitated p-n junction between P3HT pillars and fullerene (C60) exhibits a photovoltaic effect. Although the device properties are still preliminary, the experimental results indicate that an AAO template is an effective tool with which to develop organic solar cells because highly regulated nanostructures can be produced on large areas exceeding 100 mm2.

  14. On $ (J, p_n $ summability of fourier series

    Directory of Open Access Journals (Sweden)

    Satish Chandra

    2001-09-01

    Full Text Available In this paper we prove the following two theorems for $ | J, p_n | $ summability of fourier series, which generalizes many previous result: Theorem 1.  If $$ \\Phi (t = \\int_t^{\\pi} \\frac{\\phi (u}{u} du = o \\{ p (1- \\frac{1}{t} \\} ~~~~ (t \\to 0 $$ then the Fourier series for $ t = x $ is summable $ (J, p_n $ to sum $ s $. Theorem 2.  If $$ G(t = \\int_t^{\\pi} \\frac{g(u}{u} du = o \\{ p(1-\\frac{1}{t} \\} ~~~~ (t \\to 0 $$ then the differentiated Fourier series is summable $ (J, p_n $ to the value $ C $.

  15. High-Speed Scalable Silicon-MoS2 P-N Heterojunction Photodetectors

    Science.gov (United States)

    Dhyani, Veerendra; Das, Samaresh

    2017-03-01

    Two-dimensional molybdenum disulfide (MoS2) is a promising material for ultrasensitive photodetector owing to its favourable band gap and high absorption coefficient. However, their commercial applications are limited by the lack of high quality p-n junction and large wafer scale fabrication process. A high speed Si/MoS2 p-n heterojunction photodetector with simple and CMOS compatible approach has been reported here. The large area MoS2 thin film on silicon platform has been synthesized by sulfurization of RF-sputtered MoO3 films. The fabricated molecular layers of MoS2 on silicon offers high responsivity up to 8.75 A/W (at 580 nm and 3 V bias) with ultra-fast response of 10 μsec (rise time). Transient measurements of Si/MoS2 heterojunction under the modulated light reveal that the devices can function up to 50 kHz. The Si/MoS2 heterojunction is found to be sensitive to broadband wavelengths ranging from visible to near-infrared light with maximum detectivity up to ≈1.4 × 1012 Jones (2 V bias). Reproducible low dark current and high responsivity from over 20 devices in the same wafer has been measured. Additionally, the MoS2/Si photodetectors exhibit excellent stability in ambient atmosphere.

  16. Molecular electronic junction transport

    DEFF Research Database (Denmark)

    Solomon, Gemma C.; Herrmann, Carmen; Ratner, Mark

    2012-01-01

    Whenasinglemolecule,oracollectionofmolecules,isplacedbetween two electrodes and voltage is applied, one has a molecular transport junction. We discuss such junctions, their properties, their description, and some of their applications. The discussion is qualitative rather than quantitative, and f...

  17. Emitter space charge layer transit time in bipolar junction transistors

    Science.gov (United States)

    Rustagi, S. C.; Chattopadhyaya, S. K.

    1981-04-01

    The charge defined emitter space charge layer transit times of double diffused transistors have been calculated using a regional approach, and compared with the corresponding base transit times. The results obtained for emitter space-charge layer transit times have been discussed with reference to the capacitance analysis of Morgan and Smit (1960) for graded p-n junctions.

  18. TiO2-NiO p-n nanocomposite with enhanced sonophotocatalytic activity under diffused sunlight.

    Science.gov (United States)

    Vinoth, R; Karthik, P; Devan, K; Neppolian, B; Ashokkumar, Muthupandian

    2017-03-01

    TiO2-NiO composites with p-n junction were developed by assembling p-type NiO on n-type TiO2 using ultrasound assisted wet impregnation method. The sonophotocatalytic efficiencies of pure TiO2 and TiO2-NiO composites were evaluated under diffused sunlight using methyl orange (MO) as a model pollutant. The impregnation of NiO nanoparticles on TiO2 considerably enhanced the optical absorption in visible region (500-800nm) due to the formation of p-n junctions at the interface between TiO2 and NiO. The internal electric field induced by the p-n junction led to effective separation of electron-hole pairs and thereby generating a large amount of reactive species for the degradation of MO. The individual effect of ultrasound and diffused sunlight for the degradation of MO was found to be 30% and 6%, respectively. A synergy of 4.8 fold was achieved when ultrasound was combined with photocatalytic degradation process in the presence of diffused sunlight. The sonophotocatalytic activity of TiO2-NiO photocatalysts with different NiO loading was also evaluated and 10wt% NiO loading was found to be optimal. Moreover, 66% of Total Organic Carbon (TOC) removal was achieved with the optimized TiO2-NiO composite in 140min. In addition, the TiO2-NiO composite exhibited an enhanced photocurrent response under visible light illumination.

  19. Cycles in Repeated Exponentiation Modulo $p^n$

    CERN Document Server

    Glebsky, Lev

    2010-01-01

    Given a number $r$, we consider the dynamical system generated by repeated exponentiations modulo $r$, that is, by the map $u \\mapsto f_g(u)$, where $f_g(u) \\equiv g^u \\pmod r$ and $0 \\le f_g(u) \\le r-1$. The number of cycles of the defined above dynamical system is considered for $r=p^n$.

  20. Experimental Studies of New GaAs Metal/Insulator/p-n+ Switches Using Low Temperature Oxide

    Directory of Open Access Journals (Sweden)

    K. F. Yarn

    2002-01-01

    grown at low temperature by a liquid phase chemical-enhanced oxide (LPECO with a thickness of 100 Å. A significant S-shaped negative differential resistance (NDR is shown to occur that originates from the regenerative feedback in a tunnel metal/insulator/semiconductor (MIS interface and p-n+ junction. The influence of epitaxial doping concentration on the switching and holding voltages is investigated. The switching voltages are found to be decreased when increasing the epitaxial doping concentration, while the holding voltages are almost kept constant. A high turn-off/turn-on resistance ratio up to 105 has been obtained.

  1. Photovoltaic Characteristic of La0.7Sr0.3MnO3/ZnO p-n Heterojunction

    Institute of Scientific and Technical Information of China (English)

    SUN Zhi-Hui; NING Ting-Yin; ZHOU Yue-Liang; ZHAO Song-Qing; CAO Ling-Zhu

    2008-01-01

    We report on the photovoltaic properties of La0.7Sr0.3MnO3/ZnO heterojunction fabricated by pulsed laser deposition methods.Nanosecond photovoltaic pulses are observed in this junction in the wavelength range from ultraviolet-visible to infrared.A qualitative explanation is presented,based on an analysis of the photovoltaic signals of p-n heterojunction.

  2. Electron transport in doped fullerene molecular junctions

    Science.gov (United States)

    Kaur, Milanpreet; Sawhney, Ravinder Singh; Engles, Derick

    The effect of doping on the electron transport of molecular junctions is analyzed in this paper. The doped fullerene molecules are stringed to two semi-infinite gold electrodes and analyzed at equilibrium and nonequilibrium conditions of these device configurations. The contemplation is done using nonequilibrium Green’s function (NEGF)-density functional theory (DFT) to evaluate its density of states (DOS), transmission coefficient, molecular orbitals, electron density, charge transfer, current, and conductance. We conclude from the elucidated results that Au-C16Li4-Au and Au-C16Ne4-Au devices behave as an ordinary p-n junction diode and a Zener diode, respectively. Moreover, these doped fullerene molecules do not lose their metallic nature when sandwiched between the pair of gold electrodes.

  3. Enhancement of the Si p-n diode NIR photoresponse by embedding β-FeSi2 nanocrystallites

    Science.gov (United States)

    Shevlyagin, A. V.; Goroshko, D. L.; Chusovitin, E. A.; Galkin, K. N.; Galkin, N. G.; Gutakovskii, A. K.

    2015-10-01

    By using solid phase epitaxy of thin Fe films and molecular beam epitaxy of Si, a p+-Si/p-Si/β-FeSi2 nanocrystallites/n-Si(111) diode structure was fabricated. Transmission electron microscopy data confirmed a well-defined multilayered structure with embedded nanocrystallites of two typical sizes: 3-4 and 15-20 nm, and almost coherent epitaxy of the nanocrystallites with the Si matrix. The diode at zero bias conditions exhibited a current responsivity of 1.7 mA/W, an external quantum efficiency of about 0.2%, and a specific detectivity of 1.2 × 109 cm × Hz1/2/W at a wavelength of 1300 nm at room temperature. In the avalanche mode, the responsivity reached up to 20 mA/W (2% in terms of efficiency) with a value of avalanche gain equal to 5. The data obtained indicate that embedding of β-FeSi2 nanocrystallites into the depletion region of the Si p-n junction results in expansion of the spectral sensitivity up to 1600 nm and an increase of the photoresponse by more than two orders of magnitude in comparison with a conventional Si p-n junction. Thereby, fabricated structure combines advantage of the silicon photodiode functionality and simplicity with near infrared light detection capability of β-FeSi2.

  4. Enhancement of the Si p-n diode NIR photoresponse by embedding β-FeSi2 nanocrystallites.

    Science.gov (United States)

    Shevlyagin, A V; Goroshko, D L; Chusovitin, E A; Galkin, K N; Galkin, N G; Gutakovskii, A K

    2015-10-05

    By using solid phase epitaxy of thin Fe films and molecular beam epitaxy of Si, a p(+)-Si/p-Si/β-FeSi2 nanocrystallites/n-Si(111) diode structure was fabricated. Transmission electron microscopy data confirmed a well-defined multilayered structure with embedded nanocrystallites of two typical sizes: 3-4 and 15-20 nm, and almost coherent epitaxy of the nanocrystallites with the Si matrix. The diode at zero bias conditions exhibited a current responsivity of 1.7 mA/W, an external quantum efficiency of about 0.2%, and a specific detectivity of 1.2 × 10(9) cm × Hz(1/2)/W at a wavelength of 1300 nm at room temperature. In the avalanche mode, the responsivity reached up to 20 mA/W (2% in terms of efficiency) with a value of avalanche gain equal to 5. The data obtained indicate that embedding of β-FeSi2 nanocrystallites into the depletion region of the Si p-n junction results in expansion of the spectral sensitivity up to 1600 nm and an increase of the photoresponse by more than two orders of magnitude in comparison with a conventional Si p-n junction. Thereby, fabricated structure combines advantage of the silicon photodiode functionality and simplicity with near infrared light detection capability of β-FeSi2.

  5. Systematic optimization of quantum junction colloidal quantum dot solar cells

    KAUST Repository

    Liu, Huan

    2012-01-01

    The recently reported quantum junction architecture represents a promising approach to building a rectifying photovoltaic device that employs colloidal quantum dot layers on each side of the p-n junction. Here, we report an optimized quantum junction solar cell that leverages an improved aluminum zinc oxide electrode for a stable contact to the n-side of the quantum junction and silver doping of the p-layer that greatly enhances the photocurrent by expanding the depletion region in the n-side of the device. These improvements result in greater stability and a power conversion efficiency of 6.1 under AM1.5 simulated solar illumination. © 2012 American Institute of Physics.

  6. Electrical characteristics of core-shell p-n GaAs nanowire structures with Te as the n-dopant

    Energy Technology Data Exchange (ETDEWEB)

    Caram, J; Comedi, D [Laboratorio de Fisica del Solido, Dep. de Fisica, FACET, Universidad Nacional de Tucuman, Avenida Independencia 1800, 4000 Tucuman (Argentina); Sandoval, C; Tirado, M [Laboratorio de Propiedades Dielectricas de la Materia, Dep. de Fisica, FACET, Universidad Nacional de Tucuman, Avenida Independencia 1800, 4000 Tucuman (Argentina); Czaban, J; Thompson, D A; LaPierre, R R, E-mail: dcomedi@herrera.unt.edu.ar [Centre for Emerging Device Technologies, McMaster University, Hamilton, ON L8S 4L7 (Canada)

    2010-04-02

    GaAs nanowire (NW)-based p-n photovoltaic devices, with two distinct p and n spatial distributions and where Te was the n-dopant, have been studied by impedance spectroscopy in the 10{sup 3}-10{sup 7} Hz frequency range and the - 1.5-1.5 V bias range. For a large n-core/p-shell overlap region within NWs in a coaxial geometry, the p-n junction properties (DC rectification and p-n depletion capacitance) are found to prevail. The impedance data at low bias for both NW devices show large frequency dispersions with relaxation frequencies that are compatible with carrier re-emission times from traps due to GaAs surface states. An increasing conductance with increasing frequency for low bias is observed, suggesting hopping transport through localized states. For large bias the conductance increases exponentially with bias and is frequency independent, indicating conduction through extended states in this regime.

  7. P-InAsSbP/n-InAs single heterostructure back-side illuminated 8 × 8 photodiode array

    Science.gov (United States)

    Brunkov, P. N.; Il'inskaya, N. D.; Karandashev, S. A.; Lavrov, A. A.; Matveev, B. A.; Remennyi, M. A.; Stus', N. M.; Usikova, A. A.

    2016-09-01

    P-InAsSbP/n-InAs/n+-InAs single heterostructure photodiode monolithic array with linear impurity distribution in the space charge region and "bulk" n-InAs absorbing layer has been fabricated by the LPE method and studied for the first time. Unlike all known InAsSbP/InAs PDs with an abrupt p-n junction the linear impurity distribution PDs potentially suggest lower compared with analogs capacitance and tunneling current. Indeed the developed photodiodes showed good perspectives for use in low temperature pyrometry as low dark current (8 × 10-6 A/cm2, Ubias = -0.5 V, 164 K) and background limited infrared photodetector (BLIP) regime starting from 190 K (2π field of view, D3.1μm ∗ = 1.1 × 1012 cm Hz1/2/W) have been demonstrated. High photodiode performance is thought to be due to above peculiarities of the impurity distribution as well as low defect density in P-InAsSbP/n-InAs/n+-InAs single heterostructure.

  8. Magnetic tunnel junctions (MTJs)

    Institute of Scientific and Technical Information of China (English)

    2001-01-01

    We review the giant tunnel magnetoresistance (TMR) in ferromagnetic-insulator-ferromagnetic junctions discovered in recent years, which is the magnetoresistance (MR) associated with the spin-dependent tunneling between two ferromagnetic metal films separated by an insulating thin tunnel barrier. The theoretical and experimental results including junction conductance, magnetoresistance and their temperature and bias dependences are described.

  9. Stacked Josephson Junctions

    DEFF Research Database (Denmark)

    Madsen, Søren Find; Pedersen, Niels Falsig; Christiansen, Peter Leth

    2010-01-01

    Long Josephson junctions have for some time been considered as a source of THz radiation. Solitons moving coherently in the junctions is a possible source for this radiation. Analytical computations of the bunched state and bunching-inducing methods are reviewed. Experiments showing THz radiation...

  10. Design and characterization of a p+/n-well SPAD array in 150nm CMOS process.

    Science.gov (United States)

    Xu, Hesong; Pancheri, Lucio; Betta, Gian-Franco Dalla; Stoppa, David

    2017-05-29

    This paper reports on characterization results of a single-photon avalanche diode (SPAD) array in standard CMOS 150nm technology. The array is composed by 25 (5 × 5) SPADs, based on p(+)/n-well active junction along with a retrograde deep n-well guard ring. The square-shaped SPAD has a 10µm active diameter and 15.6µm pitch size, achieving a 39.9% array fill factor. Characterization results show a good breakdown voltage uniformity (40mV max-min) within each chip and 17mV/°C temperature coefficient. The median DCR is 0.4Hz/µm(2), and the afterpulsing probability is 0.85% for a dead time of 150ns at 3V excess bias voltage. The peak PDP is 31% at 450nm wavelength and a good uniformity (1.1% standard deviation) is observed for the array at 5V excess bias. The single SPADs exhibit a timing jitter of 52ps (FWHM) and 42ps (FWHM) under a 468-nm and a 831-nm laser, respectively. The crosstalk probability as a function of pixel-to-pixel distance and excess bias voltage is presented, and random telegraph signal (RTS) noise is also discussed in detail.

  11. p+-n--n+-type power diode with crystalline/nanocrystalline Si mosaic electrodes

    Science.gov (United States)

    Wensheng, Wei; Chunxi, Zhang

    2016-06-01

    Using p+-type crystalline Si with n+-type nanocrystalline Si (nc-Si) and n+-type crystalline Si with p+-type nc-Si mosaic structures as electrodes, a type of power diode was prepared with epitaxial technique and plasma-enhanced chemical vapor deposition (PECVD) method. Firstly, the basic p+-n--n+-type Si diode was fabricated by epitaxially growing p+- and n+-type layers on two sides of a lightly doped n--type Si wafer respectively. Secondly, heavily phosphorus-doped Si film was deposited with PECVD on the lithography mask etched p+-type Si side of the basic device to form a component with mosaic anode. Thirdly, heavily boron-doped Si film was deposited on the etched n+-type Si side of the second device to form a diode with mosaic anode and mosaic cathode. The images of high resolution transmission electronic microscope and patterns of X-ray diffraction reveal nanocrystallization in the phosphorus- and boron-deposited films. Electrical measurements such as capacitance-voltage relation, current-voltage feature and reverse recovery waveform were carried out to clarify the performance of prepared devices. The important roles of (n-)Si/(p+)nc-Si and (n-)Si/(n+)nc-Si junctions in the static and dynamic conduction processes in operating diodes were investigated. The performance of mosaic devices was compared to that of a basic one. Project supported by the National Natural Science Foundation of China (No. 61274006).

  12. Organic nanowire/crystalline silicon p-n heterojunctions for high-sensitivity, broadband photodetectors.

    Science.gov (United States)

    Deng, Wei; Jie, Jiansheng; Shang, Qixun; Wang, Jincheng; Zhang, Xiujuan; Yao, Shenwen; Zhang, Qing; Zhang, Xiaohong

    2015-01-28

    Organic/inorganic hybrid devices are promising candidates for high-performance, low-cost optoelectronic devices, by virtue of their unique properties. Polycrystalline/amorphous organic films are widely used in hybrid devices, because defects in the films hamper the improvement of device performance. Here, we report the construction of 2,4-bis[4-(N,N-dimethylamino)phenyl]squaraine (SQ) nanowire (NW)/crystalline Si (c-Si) p-n heterojunctions. Thanks to the high crystal quality of the SQ NWs, the heterojunctions exhibit excellent diode characteristics in darkness. It is significant that the heterojunctions have been found to be capable of detecting broadband light with wavelengths spanning from ultraviolet (UV) light, to visible (Vis) light, to near-infrared (NIR) light, because of the complementary spectrum absorption of SQ NWs with Si. The junction is demonstrated to play a core role in enhancing the device performance, in terms of ultrahigh sensitivity, excellent stability, and fast response. The photovoltaic characteristics of the heterojunctions are further investigated, revealing a power conversion efficiency (PCE) of up to 1.17%. This result also proves the potential of the device as self-powered photodetectors operating at zero external bias voltage. This work presents an important advance in constructing single-crystal organic nanostructure/inorganic heterojunctions and will enable future exploration of their applications in broadband photodetectors and solar cells.

  13. The problem of crowd crimes: the approach of P.N. Obninskiy

    Directory of Open Access Journals (Sweden)

    Gorbatov D.S.

    2014-09-01

    Full Text Available We describe the specific approach to crowd crimes proposed by prominent Russian lawyer and public figure of the XIX century P.N. Obninskiy. We clarify its fundamental differences from other concepts of Russian and foreign psychologists and lawyers. Particular attention is paid to the P.N. Obninskiy treatment of possible sanity and responsibility of participants of mass cholera riots of the late XIX century in various regions of the Russian Empire. We reveal the moral potential of his views. Crowd as a social associations, the personality changes in the crowd, the crowd propensity to violate the law, the issue of punishment for crimes committed by it – these are some of the questions that interested the public opinion of the time. The article emphasizes that the lack of trust and lack of equal dialogue between representatives of different social groups have played a negative role in the development of «contagion morale», and later became reasons for the even more tragic events of Russian history.

  14. Vertically p-n-junctioned GaN nano-wire array diode fabricated on Si(111) using MOCVD.

    Science.gov (United States)

    Park, Ji-Hyeon; Kim, Min-Hee; Kissinger, Suthan; Lee, Cheul-Ro

    2013-04-07

    We demonstrate the fabrication of n-GaN:Si/p-GaN:Mg nanowire arrays on (111) silicon substrate by metal organic chemical vapor deposition (MOCVD) method .The nanowires were grown by a newly developed two-step growth process. The diameter of as-grown nanowires ranges from 300-400 nm with a density of 6-7 × 10(7) cm(-2). The p- and n-type doping of the nanowires is achieved with Mg and Si dopant species. Structural characterization by X-ray diffraction (XRD) and high-resolution transmission electron microscopy (HRTEM) indicates that the nanowires are relatively defect-free. The room-temperature photoluminescence emission with a strong peak at 370 nm indicates that the n-GaN:Si/p-GaN:Mg nanowire arrays have potential application in light-emitting nanodevices. The cathodoluminscence (CL) spectrum clearly shows a distinct optical transition of GaN nanodiodes. The nano-n-GaN:Si/p-GaN:Mg diodes were further completed using a sputter coating approach to deposit Au/Ni metal contacts. The polysilazane filler has been etched by a wet chemical etching process. The n-GaN:Si/p-GaN:Mg nanowire diode was fabricated for different Mg source flow rates. The current-voltage (I-V) measurements reveal excellent rectifying properties with an obvious turn-on voltage at 1.6 V for a Mg flow rate of 5 sccm (standard cubic centimeters per minute).

  15. The transformation of the spatial distribution of the radiation the p-n junction in the LED

    Science.gov (United States)

    Nekrylov, Ivan S.; Korotaev, Valery V.; Gorbachev, Aleksei A.; Kleshchenok, Maksim A.

    2016-04-01

    Design of optical-electronic devices and systems involves the selection of such technical patterns that under given initial requirements and conditions are optimal according to certain criteria.1-5 The original characteristic of the OES for any purpose, defining its most important feature ability is a threshold detection. Based on this property, will be achieved the required functional quality of the device or system. Therefore, the original criteria and optimization methods have to subordinate to the idea of a better detectability. Generally reduces to the problem of optimal selection of the expected (predetermined) signals in the predetermined observation conditions. Thus the main purpose of optimization of the system when calculating its detectability is the choice of circuits and components that provide the most effective selection of a target.

  16. Dislocation Multi-junctions and Strain Hardening

    Energy Technology Data Exchange (ETDEWEB)

    Bulatov, V; Hsiung, L; Tang, M; Arsenlis, A; Bartelt, M; Cai, W; Florando, J; Hiratani, M; Rhee, M; Hommes, G; Pierce, T; Diaz de la Rubia, T

    2006-06-20

    At the microscopic scale, the strength of a crystal derives from the motion, multiplication and interaction of distinctive line defects--dislocations. First theorized in 1934 to explain low magnitudes of crystal strength observed experimentally, the existence of dislocations was confirmed only two decades later. Much of the research in dislocation physics has since focused on dislocation interactions and their role in strain hardening: a common phenomenon in which continued deformation increases a crystal's strength. The existing theory relates strain hardening to pair-wise dislocation reactions in which two intersecting dislocations form junctions tying dislocations together. Here we report that interactions among three dislocations result in the formation of unusual elements of dislocation network topology, termed hereafter multi-junctions. The existence of multi-junctions is first predicted by Dislocation Dynamics (DD) and atomistic simulations and then confirmed by the transmission electron microscopy (TEM) experiments in single crystal molybdenum. In large-scale Dislocation Dynamics simulations, multi-junctions present very strong, nearly indestructible, obstacles to dislocation motion and furnish new sources for dislocation multiplication thereby playing an essential role in the evolution of dislocation microstructure and strength of deforming crystals. Simulation analyses conclude that multi-junctions are responsible for the strong orientation dependence of strain hardening in BCC crystals.

  17. Lateral Concepts

    Directory of Open Access Journals (Sweden)

    Christopher Gad

    2016-06-01

    Full Text Available This essay discusses the complex relation between the knowledges and practices of the researcher and his/her informants in terms of lateral concepts. The starting point is that it is not the prerogative of the (STS scholar to conceptualize the world; all our “informants” do it too. This creates the possibility of enriching our own conceptual repertoires by letting them be inflected by the concepts of those we study. In a broad sense, the lateral means that there is a many-to-many relation between domains of knowledge and practice. However, each specific case of the lateral is necessarily immanent to a particular empirical setting and form of inquiry. In this sense lateral concepts are radically empirical since it locates concepts within the field. To clarify the meaning and stakes of lateral concepts, we first make a contrast between lateral anthropology and Latour’s notion of infra-reflexivity. We end with a brief illustration and discussion of how lateral conceptualization can re-orient STS modes of inquiry, and why this matters.

  18. Equivalent Josephson junctions

    Science.gov (United States)

    Boyadjiev, T. L.; Semerdjieva, E. G.; Shukrinov, Yu. M.

    2008-01-01

    The magnetic field dependences of critical current are numerically constructed for a long Josephson junction with a shunt-or resistor-type microscopic inhomogeneities and compared to the critical curve of a junction with exponentially varying width. The numerical results show that it is adequate to replace the distributed inhomogeneity of a long Josephson junction by an inhomogeneity localized at one of its ends, which has certain technological advantages. It is also shown that the critical curves of junctions with exponentially varying width and inhomogeneities localized at the ends are unaffected by the mixed fluxon-antifluxon distributions of the magnetic flow. This fact may explain the improvement of the spectra of microwave radiation noted in the literature.

  19. Quantum Junction Solar Cells

    KAUST Repository

    Tang, Jiang

    2012-09-12

    Colloidal quantum dot solids combine convenient solution-processing with quantum size effect tuning, offering avenues to high-efficiency multijunction cells based on a single materials synthesis and processing platform. The highest-performing colloidal quantum dot rectifying devices reported to date have relied on a junction between a quantum-tuned absorber and a bulk material (e.g., TiO 2); however, quantum tuning of the absorber then requires complete redesign of the bulk acceptor, compromising the benefits of facile quantum tuning. Here we report rectifying junctions constructed entirely using inherently band-aligned quantum-tuned materials. Realizing these quantum junction diodes relied upon the creation of an n-type quantum dot solid having a clean bandgap. We combine stable, chemically compatible, high-performance n-type and p-type materials to create the first quantum junction solar cells. We present a family of photovoltaic devices having widely tuned bandgaps of 0.6-1.6 eV that excel where conventional quantum-to-bulk devices fail to perform. Devices having optimal single-junction bandgaps exhibit certified AM1.5 solar power conversion efficiencies of 5.4%. Control over doping in quantum solids, and the successful integration of these materials to form stable quantum junctions, offers a powerful new degree of freedom to colloidal quantum dot optoelectronics. © 2012 American Chemical Society.

  20. Facility for the (p, n) polarization transfer measurement

    Energy Technology Data Exchange (ETDEWEB)

    Sakai, H. [Tokyo Univ. (Japan). Dept. of Phys.; Okamura, H. [Tokyo Univ. (Japan). Dept. of Phys.; Otsu, H. [Tokyo Univ. (Japan). Dept. of Phys.; Wakasa, T. [Tokyo Univ. (Japan). Dept. of Phys.; Ishida, S. [Tokyo Univ. (Japan). Dept. of Phys.; Sakamoto, N. [Tokyo Univ. (Japan). Dept. of Phys.; Uesaka, T. [Tokyo Univ. (Japan). Dept. of Phys.; Satou, Y. [Tokyo Univ. (Japan). Dept. of Phys.; Fujita, S. [Tokyo Univ. (Japan). Dept. of Phys.; Hatanaka, K. [Research Center for Nuclear Physics, Osaka University, Mihogaoka, Ibaraki 567 (Japan)

    1996-01-21

    We have designed and constructed a facility to measure the complete polarization transfer coefficient D{sub ij} for the (p,n) reaction at intermediate energies. The facility consists of a beam swinger dipole magnet used for angular distribution measurements and a 100 m tunnel for the neutron energy measurement by the time-of-flight method. Typical neutron energy resolution is about 1.85 MeV for 290 MeV neutrons including a contribution of 1 MeV due to the target thickness. The background associated with this tunnel system was carefully investigated and found to be negligibly small. A dipole magnet for the neutron spin rotation is installed in the neutron flight path to measure the longitudinal polarization as well as the induced polarization. The neutron polarimeter which consists of 6 planes of the two-dimensional position-sensitive neutron detectors with a size of 1 m x 1 m x 0.1 m has been constructed. Its effective left-right analyzing power left angle A{sup eff}{sub y} right angle has been calibrated at 194, 290 and 384 MeV. The figure-of-merit value defined by left angle A{sup eff}{sub y} right angle {sup 2} x {epsilon}{sub DS} at 290 MeV is 4.05 x 10{sup -4}, where {epsilon}{sub DS} is the double scattering efficiency. (orig.).

  1. Three-dimensional numerical simulation of planar P+n heterojunction In0.53Ga0.47As photodiodes in dense arrays part II: modulation transfer function modeling

    Science.gov (United States)

    Wichman, Adam R.; DeWames, Roger E.; Bellotti, Enrico

    2014-06-01

    Processing improvements have facilitated manufacturing reduced pixel dimensions for lattice-matched InGaAs on InP short-wave infrared detectors. Due to its technological maturity, this material system continues to garner attention for low-light level imaging applications. With pixel dimensions smaller than minority carrier diffusion lengths, optimizing array performance by reducing crosstalk from lateral carrier diffusion remains an important design issue. Analytical models, however, have provided limited insight on underlying mechanisms limiting device performance in the conventional planar double heterointerface device. Quantitative modeling provides tools to investigate performance sensitivities and their underlying mechanisms. In this work we develop a three-dimensional numerical simulation for dense P+n In0.53Ga0.47As on InP photo detector focal plane arrays using a conventional planar, back-illuminated structure. We evaluate optical generation with finite-difference time-domain analysis, and model carrier transport in a drift diffusion analysis simultaneously solving the carrier continuity and Poisson equations. Using this model we investigate modulation transfer function variations with pixel pitch and diffused junction geometries for small dimension arrays. By accounting for carrier diffusion effects, these results should provide a benchmark against which to evaluate modulation transfer function contributions from other effects, such as crosstalk attributable to photon recycling.

  2. Binary Oxide p-n Heterojunction Piezoelectric Nanogenerators with an Electrochemically Deposited High p-Type Cu2O Layer.

    Science.gov (United States)

    Baek, Seung Ki; Kwak, Sung Soo; Kim, Joo Sung; Kim, Sang Woo; Cho, Hyung Koun

    2016-08-31

    The high performance of ZnO-based piezoelectric nanogenerators (NGs) has been limited due to the potential screening from intrinsic electron carriers in ZnO. We have demonstrated a novel approach to greatly improve piezoelectric power generation by electrodepositing a high-quality p-type Cu2O layer between the piezoelectric semiconducting film and the metal electrode. The p-n heterojunction using only oxides suppresses the screening effect by forming an intrinsic depletion region, and thus sufficiently enhances the piezoelectric potential, compared to the pristine ZnO piezoelectric NG. Interestingly, a Sb-doped Cu2O layer has high mobility and low surface trap states. Thus, this doped layer is an attractive p-type material to significantly improve piezoelectric performance. Our results revealed that p-n junction NGs consisting of Au/ZnO/Cu2O/indium tin oxide with a Cu2O:Sb (cuprous oxide with a small amount of antimony) layer of sufficient thickness (3 μm) exhibit an extraordinarily high piezoelectric potential of 0.9 V and a maximum output current density of 3.1 μA/cm(2).

  3. Junctionless nanowire TFET with built-in N-P-N bipolar action: Physics and operational principle

    Science.gov (United States)

    Rahimian, Morteza; Fathipour, Morteza

    2016-12-01

    In this paper, we present a novel junctionless nanowire tunneling FET (JN-TFET) in which the source region is divided into an n+ as well as a p+ type region. We will show that this structure can provide a built-in n-p-n bipolar junction transistor (BJT) action in the on state of the device. In this regime, tunneling of electrons from the source valence band into the channel conduction band enhances the hole concentration in the p+ source region. Also, the potential in this region is increased, which drives a built-in BJT transistor by forward biasing the base-emitter junction. Thus, the BJT current adds up to the normal tunneling current in the JN-TFET. Owing to the sharp switching of the JN-TFET and the high BJT current gain, the overall performance of the device, herein called "BJN-TFET," is improved. On-state currents as high as 2.17 × 10-6 A/μm and subthreshold swings as low as ˜50 mV/dec at VDS = 1 V are achieved.

  4. Ideals of Classical Linear Lie Superalgebra P(n) over Commutative Rings

    Institute of Scientific and Technical Information of China (English)

    SUN Li-ping; ZHANG Yong-zheng

    2007-01-01

    Let R be a commutative ring with identity 1. The relations between the ideals of Lie superalgebra P(n) and the ideals of R are discussed by studying the basis, center and order ideal of P(n). All ideals of P(n) are proved to be minimal and standard.

  5. Hydrogen passivation of N(+)-P and P(+)-N heteroepitaxial InP solar cell structures

    Science.gov (United States)

    Chatterjee, Basab; Davis, William C.; Ringel, Steve A.; Hoffman, Richard, Jr.

    1996-01-01

    Dislocations and related point defect complexes caused by lattice mismatch currently limit the performance of heteroepitaxial InP cells by introducing shunting paths across the active junction and by the formation of deep traps within the base region. We have previously demonstrated that plasma hydrogenation is an effective and stable means to passivate the electrical activity of such defects in specially designed heteroepitaxial InP test structures to probe hydrogen passivation at typical base depths within a cell structure. In this work, we present our results on the hydrogen passivation of actual heteroepitaxial n-p and p-n InP cell structures grown on GaAs substrates by metalorganic chemical vapor deposition (MOCVD). We have found that a 2 hour exposure to a 13.56 MHz hydrogen plasma at 275 C reduces the deep level concentration in the base regions of both n(+)-p and p(+)-n heteroepitaxial InP cell structures from as-grown values of 5-7 x 10(exp 14) cm(exp -3), down to 3-5 x 10(exp 12) cm(exp -3). All dopants were successfully reactivated by a 400 C, 5 minute anneal with no detectable activation of deep levels. One to five analysis indicated a subsequent approximately 100 fold decrease in reverse leakage current at -1 volt reverse bias, and an improved built in voltage for the p(+)-n structures. In addition to being passivated, dislocations are also shown to participate in secondary interactions during hydrogenation. We find that the presence of dislocations enhances hydrogen diffusion into the cell structure, and lowers the apparent dissociation energy of Zn-H complexes from 1.19 eV for homoepitaxial Zn-doped InP to 1.12 eV for heteroepitaxial Zn-doped InP. This is explained by additional hydrogen trapping at dislocations subsequent to the reactivation of Zn dopants after hydrogenation.

  6. Hydrogen Passivation of N(+)P and P(+)N Heteroepitaxial InP Solar Cell Structures

    Science.gov (United States)

    Chatterjee, B.; Davis, W. C.; Ringel, S. A.; Hoffman, R., Jr.

    1995-01-01

    Dislocations and related point defect complexes caused by lattice mismatch currently limit the performance of heteroepitaxial InP cells by introducing shunting paths across the active junction and by the formation of deep traps within the base region. We have previously demonstrated that plasma hydrogenation is an effective and stable means to passivate the electrical activity of such defects in specially designed heteroepitaxial InP test structures to probe hydrogen passivation at typical base depths within a cell structure. In this work, we present our results on the hydrogen passivation of actual heteroepitaxial n(+)p and p(+)n InP cell structures grown on GaAs substrates by metalorganic chemical vapor deposition (MOCVD). We have found that a 2 hour exposure to a 13.56 MHz hydrogen plasma at 275 C reduces the deep level concentration in the base regions of both n(+)p and p(+)n heteroepitaxial InP cell structures from as-grown values of 5 - 7 x 10(exp 14)/cc, down to 3 - 5 x 10(exp 12)/cc. All dopants were successfully reactivated by a 400 C, 5 minute anneal With no detectable activation of deep levels. I-V analysis indicated a subsequent approx. 100 fold decrease In reverse leakage current at -1 volt reverse bias, and an improved built in voltage for the p(+)n structures. ln addition to being passivated,dislocations are also shown to participate in secondary interactions during hydrogenation. We find that the presence of dislocations enhances hydrogen diffusion into the cell structure, and lowers the apparent dissociation energy of Zn-H complexes from 1.19 eV for homoepitaxial Zn-doped InP to 1.12 eV for heteroepitaxial Zn-doped InP. This is explained by additional hydrogen trapping at dislocations subsequent to the reactivation of Zn dopants after hydrogenation.

  7. Two new septate junctions in the phylum Coelenterata.

    Science.gov (United States)

    Green, C R; Flower, N E

    1980-04-01

    Freeze-fracture of fixed and unfixed tissue, lanthanum tracer and conventional thin-section studies have revealed 2 new types of septate junction in the class Anthozoa, phylum Coelenterata. These new junctions have the 15-18-nm intercellular spacing of all other described septate junctions and are found around the apical circumference of cells lining a lumen or outside edge. However, in freeze-fracture replicas and tangential views of lanthanum-impregnated tissue, they are seen to be quite different from other known septate junction types. One of the new junctions is found in endothelial tissue such as that lining the gut or the inside of the tentacles. In tangential view it is seen to consist of relatively short, straight, double septa, again with lateral projections. In feeeze-fracture of unfixed tissue, the junction consists of double rows of particles on the P face, the particles of one row being rounded, those of the other being elongated at right angles to the line of the septum. This dichotomy in particle size is unexpected, as the 2 halves of the septa as seen in tangential view are symmetrical. In freeze-fracture of fixed material the particle arrays remain on the P face and appear similar to those of unfixed material, but never as clear. In fixed tissue, some distortion had occurred and in extreme cases septa appear as a single broad jumbled row of particles. In this double septa junction, the rows of particles seen in freeze-fracture are occasionally seen to anastomose with a septum dividing into 2 and a third row of particles aligning with the 2 new septa to form their double particle rows. In both fixed and unfixed tissues, the E face of the junction consists of wide, shallow grooves. The second of the new junctions occurs in epithelial tissue, such as around the outer edge of sea-anemone tentacles, and consists of long wavy septa with lateral projections. In views where these projections appear longest, they arise predominantly from one side of the

  8. A first order theory of the p/+/-n-n/+/ edge-illuminated silicon solar cell at very high injection levels

    Science.gov (United States)

    Goradia, C.; Sater, B. L.

    1977-01-01

    A first order theory of the edge-illuminated p(+)-n-n(+) silicon solar cell under very high injection levels has been derived. The very high injection level illuminated J-V characteristic is derived for any general base width to diffusion length (W/L) ratio and it includes the minority carrier reflection by the n-n(+) high-low junction. The beneficial effects of the high-low junction are shown to be significant until extremely high injection levels are reached. The theoretical dependencies of Jsc and Voc on temperature, incident intensity, and base resistivity are derived and discussed in detail. Some experimental results are given and these are discussed in relation to the theory.

  9. Lateral Mixing

    Science.gov (United States)

    2012-11-08

    being made on their analysis. A process we became very curious about was the separation of tendrils of warm salty water from the north wall figure 7...structure, and to remove the effect of internal waves by mapping this structure onto isopycnals. This has been very successful in elucidating lateral...we passed through the same water on multiple passes, and that changes in the horizontal structure of the water mas should be readily apparent from

  10. The human myotendinous junction

    DEFF Research Database (Denmark)

    Knudsen, A B; Larsen, M; Mackey, Abigail

    2015-01-01

    The myotendinous junction (MTJ) is a specialized structure in the musculotendinous system, where force is transmitted from muscle to tendon. Animal models have shown that the MTJ takes form of tendon finger-like processes merging with muscle tissue. The human MTJ is largely unknown and has never ...

  11. Doped semiconductor nanocrystal junctions

    Energy Technology Data Exchange (ETDEWEB)

    Borowik, Ł.; Mélin, T., E-mail: thierry.melin@isen.iemn.univ-lille1.fr [Institut d’Electronique, de Microélectronique et de Nanotechnologie, CNRS-UMR8520, Avenue Poincaré, F-59652 Villeneuve d’Ascq (France); Nguyen-Tran, T.; Roca i Cabarrocas, P. [Laboratoire de Physique des Interfaces et des Couches Minces, CNRS-UMR7647, Ecole Polytechnique, F-91128 Palaiseau (France)

    2013-11-28

    Semiconductor junctions are the basis of electronic and photovoltaic devices. Here, we investigate junctions formed from highly doped (N{sub D}≈10{sup 20}−10{sup 21}cm{sup −3}) silicon nanocrystals (NCs) in the 2–50 nm size range, using Kelvin probe force microscopy experiments with single charge sensitivity. We show that the charge transfer from doped NCs towards a two-dimensional layer experimentally follows a simple phenomenological law, corresponding to formation of an interface dipole linearly increasing with the NC diameter. This feature leads to analytically predictable junction properties down to quantum size regimes: NC depletion width independent of the NC size and varying as N{sub D}{sup −1/3}, and depleted charge linearly increasing with the NC diameter and varying as N{sub D}{sup 1/3}. We thus establish a “nanocrystal counterpart” of conventional semiconductor planar junctions, here however valid in regimes of strong electrostatic and quantum confinements.

  12. Magnetoresistance in Co/AlO sub x /Co tunnel junction arrays

    CERN Document Server

    Urech, M; Haviland, D B

    2002-01-01

    Lateral arrays of Co/AlO sub x /Co junctions with dimensions down to 60 nm and inter-junction separations approx 60-100 nm have been fabricated and analyzed for possible coherent tunneling effects. Extra attention is paid to avoid uncertainties due to inconsistencies in switching and/or resistance of successive barriers. We observe approx 10% magnetoresistance enhancement at moderate bias in double junctions that cannot be accounted for by a simple model of two resistsors in series.

  13. Junction trees of general graphs

    Institute of Scientific and Technical Information of China (English)

    Xiaofei WANG; Jianhua GUO

    2008-01-01

    In this paper,we study the maximal prime subgraphs and their corresponding structure for any undirected graph.We introduce the notion of junction trees and investigate their structural characteristics,including junction properties,induced-subtree properties,running-intersection properties and maximum-weight spanning tree properties.Furthermore,the characters of leaves and edges on junction trees are discussed.

  14. Current distributions in stripe Majorana junctions

    Science.gov (United States)

    Osca, Javier; Llorenç, Serra

    2017-02-01

    We calculate current and density distributions in stripe (2D planar) junctions between normal and Majorana nanowires having a finite ( y) transverse length. In presence of a magnetic field with vertical and in-plane components, the y-symmetry of the charge current distribution in the normal lead changes strongly across the Majorana phase transition: from center-symmetric if a Majorana mode is present to laterally-shifted (as expected by the Hall effect) if the field is tilted such as to destroy the Majorana mode due to the projection rule. We compare quasi-particle and charge distributions of current and density, as well as spin magnetizations. The Majorana mode causes opposite spin accumulations on the transverse sides of the junction and the emergence of a spin current.

  15. Transport measurements of negative refractive behavior in ballistic graphene hetero junctions

    Science.gov (United States)

    Lee, Gil-Ho; Park, Geon-Hyoung; Kim, Minsoo; Lee, Jae Hyeong; Lee, Hu-Jong

    2015-03-01

    We investigated the electronic current refraction at p-n junctions (PNJs) in ballistic monolayer graphene. Given a peculiar band structure of the graphene, the transmission of electrons through a PNJ is predicted to be similar to the optical refraction at the boundary of metamaterials with negative refractive index. In consequence, electrons waves injected at a point in one side of a junction can be refocused into a single point in the other side of the junction, which demonstrates Veselago lensing for the electrons. By adopting high-yield dry-transfer technique, we fabricated fully ballistic graphene devices encapsulated by hexagonal boron nitrides with a local top gate. We will present the signatures of negative refractive transport behavior of electrons in PNJs and also discuss about the electronic current focusing in p-n-p heterojunctions in terms of Veselago lensing.

  16. Measurement of chi(cj) decaying into p(n)over-bar pi(-) and p(n)over-bar pi(-)pi(0)

    NARCIS (Netherlands)

    Ablikim, M.; Achasov, M. N.; Albayrak, O.; Ambrose, D. J.; An, F. F.; An, Q.; Bai, J. Z.; Ban, Y.; Becker, J.; Bennett, J. V.; Bertani, M.; Bian, J. M.; Boger, E.; Bondarenko, O.; Boyko, I.; Briere, R. A.; Bytev, V.; Cai, X.; Cakir, O.; Calcaterra, A.; Cao, G. F.; Cetin, S. A.; Chang, J. F.; Chelkov, G.; Chen, G.; Chen, H. S.; Chen, J. C.; Chen, M. L.; Chen, S. J.; Chen, X.; Chen, Y. B.; Cheng, H. P.; Chu, Y. P.; Cronin-Hennessy, D.; Dai, H. L.; Dai, J. P.; Dedovich, D.; Deng, Z. Y.; Denig, A.; Denysenko, I.; Destefani, M.; Ding, W. M.; Ding, Y.; Dong, L. Y.; Dong, M. Y.; Du, S. X.; Fang, J.; Fang, S. S.; Fava, L.; Feldbauer, F.; Feng, C. Q.; Ferroli, R. B.; Fu, C. D.; Fu, J. L.; Gao, Y.; Geng, C.; Goetzen, K.; Gong, W. X.; Gradl, W.; Greco, M.; Gu, M. H.; Gu, Y. T.; Guan, Y. H.; Guo, A. Q.; Guo, L. B.; Guo, Y. P.; Han, Y. L.; Harris, F. A.; He, K. L.; He, M.; He, Z. Y.; Held, T.; Heng, Y. K.; Hou, Z. L.; Hu, H. M.; Hu, T.; Huang, G. M.; Huang, G. S.; Huang, J. S.; Huang, X. T.; Huang, Y. P.; Hussain, T.; Ji, C. S.; Ji, Q.; Ji, Q. P.; Ji, X. B.; Ji, X. L.; Jiang, L. L.; Jiang, X. S.; Jiao, J. B.; Jiao, Z.; Jin, D. P.; Jin, S.; Jing, F. F.; Kalantar-Nayestanaki, N.; Kavatsyuk, M.; Kuehn, W.; Lai, W.; Lange, J. S.; Li, C. H.; Li, Cheng; Li, Cui; Li, D. M.; Li, F.; Li, G.; Li, H. B.; Li, J. C.; Li, K.; Li, Lei; Li, Q. J.; Li, S. L.; Li, W. D.; Li, W. G.; Li, X. L.; Li, X. N.; Li, X. Q.; Li, X. R.; Li, Z. B.; Liang, H.; Liang, Y. F.; Liang, Y. T.; Liao, G. R.; Liao, X. T.; Liu, B. J.; Liu, C. L.; Liu, C. X.; Liu, C. Y.; Liu, F. H.; Liu, Fang; Liu, Feng; Liu, H.; Liu, H. H.; Liu, H. M.; Liu, H. W.; Liu, J. P.; Liu, K. Y.; Liu, Kai; Liu, P. L.; Liu, Q.; Liu, S. B.; Liu, X.; Liu, Y. B.; Liu, Z. A.; Liu, Zhiqiang; Liu, Zhiqing; Loehner, H.; Lu, G. R.; Lu, H. J.; Lu, J. G.; Lu, Q. W.; Lu, X. R.; Lu, Y. P.; Luo, C. L.; Luo, M. X.; Luo, T.; Luo, X. L.; Lv, M.; Ma, C. L.; Ma, F. C.; Ma, H. L.; Ma, Q. M.; Ma, S.; Ma, T.; Ma, X. Y.; Ma, Y.; Maas, F. E.; Maggiora, M.; Malik, Q. A.; Mao, Y. J.; Mao, Z. P.; Messchendorp, J. G.; Min, J.; Min, T. J.; Mitchell, R. E.; Mo, X. H.; Morales, C. Morales; Motzko, C.; Muchnoi, N. Yu.; Muramatsu, H.; Nefedov, Y.; Nicholson, C.; Nikolaev, I. B.; Ning, Z.; Olsen, S. L.; Ouyang, Q.; Pacetti, S.; Park, J. W.; Pelizaeus, M.; Peng, H. P.; Peters, K.; Ping, J. L.; Ping, R. G.; Poling, R.; Prencipe, E.; Qi, M.; Qian, S.; Qiao, C. F.; Qin, X. S.; Qin, Y.; Qin, Z. H.; Qiu, J. F.; Rashid, K. H.; Rong, G.; Ruan, X. D.; Sarantsev, A.; Schaefer, B. D.; Schulze, J.; Shao, M.; Shen, C. P.; Shen, X. Y.; Sheng, H. Y.; Shepherd, M. R.; Song, X. Y.; Spataro, S.; Spruck, B.; Sun, D. H.; Sun, G. X.; Sun, J. F.; Sun, S. S.; Sun, Y. J.; Sun, Y. Z.; Sun, Z. J.; Sun, Z. T.; Tang, C. J.; Tang, X.; Tapan, I.; Thorndike, E. H.; Toth, D.; Ullrich, M.; Varner, G. S.; Wang, B.; Wang, B. Q.; Wang, D.; Wang, D. Y.; Wang, K.; Wang, L. L.; Wang, L. S.; Wang, M.; Wang, P.; Wang, P. L.; Wang, Q.; Wang, Q. J.; Wang, S. G.; Wang, X. L.; Wang, Y. D.; Wang, Y. F.; Wang, Y. Q.; Wang, Z.; Wang, Z. G.; Wang, Z. Y.; Wei, D. H.; Wei, J. B.; Weidenkaff, P.; Wen, Q. G.; Wen, S. P.; Wiedner, U.; Wu, L. H.; Wu, N.; Wu, S. X.; Wu, W.; Wu, Z.; Xia, L. G.; Xiao, Z. J.; Xie, Y. G.; Xiu, Q. L.; Xu, G. F.; Xu, G. M.; Xu, H.; Xu, Q. J.; Xu, X. P.; Xu, Z. R.; Xue, F.; Xue, Z.; Yan, L.; Yan, W. B.; Yan, Y. H.; Yang, H. X.; Yang, Y.; Yang, Y. X.; Ye, H.; Ye, M.; Ye, M. H.; Yu, B. X.; Yu, C. X.; Yu, H. W.; Yu, J. S.; Yu, S. P.; Yuan, C. Z.; Yuan, Y.; Zafar, A. A.; Zallo, A.; Zeng, Y.; Zhang, B. X.; Zhang, B. Y.; Zhang, C.; Zhang, C. C.; Zhang, D. H.; Zhang, H. H.; Zhang, H. Y.; Zhang, J. Q.; Zhang, J. W.; Zhang, J. Y.; Zhang, J. Z.; Zhang, S. H.; Zhang, X. J.; Zhang, X. Y.; Zhang, Y.; Zhang, Y. H.; Zhang, Y. S.; Zhang, Z. P.; Zhang, Z. Y.; Zhao, G.; Zhao, H. S.; Zhao, J. W.; Zhao, K. X.; Zhao, Lei; Zhao, Ling; Zhao, M. G.; Zhao, Q.; Zhao, Q. Z.; Zhao, S. J.; Zhao, T. C.; Zhao, X. H.; Zhao, Y. B.; Zhao, Z. G.; Zhemchugov, A.; Zheng, B.; Zheng, Y. H.; Zhong, B.; Zhong, J.; Zhong, Z.; Zhou, L.; Zhou, X. K.; Zhou, X. R.; Zhu, C.; Zhu, K.; Zhu, K. J.; Zhu, S. H.; Zhu, X. L.; Zhu, Y. C.; Zhu, Y. M.; Zhu, Y. S.; Zhu, Z. A.; Zhuang, J.; Zou, B. S.; Zou, J. H.; Werner, M.J.; Zheng, J.P.

    2012-01-01

    Using a data sample of 1.06 x 10(8) psi' events collected with the BESIII detector in 2009, the branching fractions of chi(cJ) -> p (n) over bar pi(-) and chi(cJ) -> p (n) over bar pi(-)pi(0) (J = 0, 1, 2) are measured. (Throughout the text, inclusion of charge conjugate modes is implied if not stat

  17. Forbidden 2 P- nP and 2 P- nF transitions in the energy spectrum of ultracold Rydberg lithium-7 atoms

    Science.gov (United States)

    Zelener, B. B.; Saakyan, S. A.; Sautenkov, V. A.; Manykin, E. A.; Zelener, B. V.; Fortov, V. E.

    2016-04-01

    Forbidden 2 P- nP and 2 P- nF transitions in the ranges of the principal quantum number n = 42-114 and n = 38-48 have been detected in the optical spectra of ultracold highly excited lithium-7 atoms. The presence of forbidden transitions is due to induced external electric fields. The quantum defects and ionization energy obtained in various experiments and predicted theoretically have been discussed.

  18. Holliday junction resolvases.

    Science.gov (United States)

    Wyatt, Haley D M; West, Stephen C

    2014-09-02

    Four-way DNA intermediates, called Holliday junctions (HJs), can form during meiotic and mitotic recombination, and their removal is crucial for chromosome segregation. A group of ubiquitous and highly specialized structure-selective endonucleases catalyze the cleavage of HJs into two disconnected DNA duplexes in a reaction called HJ resolution. These enzymes, called HJ resolvases, have been identified in bacteria and their bacteriophages, archaea, and eukaryotes. In this review, we discuss fundamental aspects of the HJ structure and their interaction with junction-resolving enzymes. This is followed by a brief discussion of the eubacterial RuvABC enzymes, which provide the paradigm for HJ resolvases in other organisms. Finally, we review the biochemical and structural properties of some well-characterized resolvases from archaea, bacteriophage, and eukaryotes. Copyright © 2014 Cold Spring Harbor Laboratory Press; all rights reserved.

  19. Wireless Josephson Junction Arrays

    Science.gov (United States)

    Adams, Laura

    2015-03-01

    We report low temperature, microwave transmission measurements on a wireless two- dimensional network of Josephson junction arrays composed of superconductor-insulator -superconductor tunnel junctions. Unlike their biased counterparts, by removing all electrical contacts to the arrays and superfluous microwave components and interconnects in the transmission line, we observe new collective behavior in the transmission spectra. In particular we will show emergent behavior that systematically responds to changes in microwave power at fixed temperature. Likewise we will show the dynamic and collective response of the arrays while tuning the temperature at fixed microwave power. We discuss these spectra in terms of the Berezinskii-Kosterlitz-Thouless phase transition and Shapiro steps. We gratefully acknowledge the support Prof. Steven Anlage at the University of Maryland and Prof. Allen Goldman at the University of Minnesota. Physics and School of Engineering and Applied Sciences.

  20. On the Constant Metric Dimension of Generalized Petersen Graphs P (n, 4)

    Institute of Scientific and Technical Information of China (English)

    Saba NAZ; Muhammad SALMAN; Usman ALI; Imran JAVAID; Syed Ahtsham-ul-Haq; BOKHARY

    2014-01-01

    In this paper, we consider the family of generalized Petersen graphs P (n, 4). We prove that the metric dimension of P (n, 4) is 3 when n≡0 (mod 4), and is 4 when n=4k+3 (k is even). For n ≡ 1, 2 (mod 4) and n = 4k+3 (k is odd), we prove that the metric dimension of P (n, 4) is bounded above by 4. This shows that each graph of the family of generalized Petersen graphs P (n, 4) has constant metric dimension.

  1. DNA-based nanoparticle tension sensors reveal that T-cell receptors transmit defined pN forces to their antigens for enhanced fidelity.

    Science.gov (United States)

    Liu, Yang; Blanchfield, Lori; Ma, Victor Pui-Yan; Andargachew, Rakieb; Galior, Kornelia; Liu, Zheng; Evavold, Brian; Salaita, Khalid

    2016-05-17

    T cells are triggered when the T-cell receptor (TCR) encounters its antigenic ligand, the peptide-major histocompatibility complex (pMHC), on the surface of antigen presenting cells (APCs). Because T cells are highly migratory and antigen recognition occurs at an intermembrane junction where the T cell physically contacts the APC, there are long-standing questions of whether T cells transmit defined forces to their TCR complex and whether chemomechanical coupling influences immune function. Here we develop DNA-based gold nanoparticle tension sensors to provide, to our knowledge, the first pN tension maps of individual TCR-pMHC complexes during T-cell activation. We show that naïve T cells harness cytoskeletal coupling to transmit 12-19 pN of force to their TCRs within seconds of ligand binding and preceding initial calcium signaling. CD8 coreceptor binding and lymphocyte-specific kinase signaling are required for antigen-mediated cell spreading and force generation. Lymphocyte function-associated antigen 1 (LFA-1) mediated adhesion modulates TCR-pMHC tension by intensifying its magnitude to values >19 pN and spatially reorganizes the location of TCR forces to the kinapse, the zone located at the trailing edge of migrating T cells, thus demonstrating chemomechanical crosstalk between TCR and LFA-1 receptor signaling. Finally, T cells display a dampened and poorly specific response to antigen agonists when TCR forces are chemically abolished or physically "filtered" to a level below ∼12 pN using mechanically labile DNA tethers. Therefore, we conclude that T cells tune TCR mechanics with pN resolution to create a checkpoint of agonist quality necessary for specific immune response.

  2. Perimeter Governed Minority Carrier Lifetimes in 4H-SiC p(+)-n Diodes Measured by Reverse Recovery Switching Transient Analysis

    Science.gov (United States)

    Neudeck, Philip G.

    1998-01-01

    Minority carrier lifetimes in epitaxial 4H-SiC p(+)-n junction diodes were measured via an analysis of reverse recovery switching characteristics. Behavior of reverse recovery storage time (t(s)) as a function of initial ON-state forward current (I(F)) and OFF-state reverse current (I(R)) followed well-documented trends which have been observed for decades in silicon p-n rectifiers. Average minority carrier (hole) lifetimes (tau(p)) calculated from plots of t(s) vs I(R)/I(F) strongly decreased with decreasing device area. Bulk and perimeter components of average hole lifetimes were separated by plotting 1/tau(p) as a function of device perimeter-to- area ratio (P/A). This plot reveals that perimeter recombination is dominant in these devices, whose areas are all less than 1 sq mm. The bulk minority carrier (hole) lifetime extracted from the 1/tau(p) vs P/A plot is approximately 0.7 micro-s, well above the 60 ns to 300 ns average iit'eptimes obtained when perimeter recombination effects are ignored in the analysis. Given the fact that there has been little previous investigation of bipolar diode and transistor performance as a function of perimeter-to-area ratio, this work raises the possibility that perimeter recombination may be partly responsible for poor effective minority carrier lifetimes and limited performance obtained in many previous SiC bipolar junction devices.

  3. Junctional ectopic tachycardia evolving into complete heart block

    NARCIS (Netherlands)

    Henneveld, H; Hutter, P; Bink-Boelkens, M; Sreeram, N

    1998-01-01

    Transition from congenital junctional ectopic tachycardia to complete AV block was observed in an 8 month old girl, over a 36 hour period, during initial hospital admission. Two years later she had evidence of a rapidly increasing left ventricular end diastolic diameter, associated with lowest heart

  4. Tight Junctions in Salivary Epithelium

    Directory of Open Access Journals (Sweden)

    Olga J. Baker

    2010-01-01

    Full Text Available Epithelial cell tight junctions (TJs consist of a narrow belt-like structure in the apical region of the lateral plasma membrane that circumferentially binds each cell to its neighbor. TJs are found in tissues that are involved in polarized secretions, absorption functions, and maintaining barriers between blood and interstitial fluids. The morphology, permeability, and ion selectivity of TJ vary among different types of tissues and species. TJs are very dynamic structures that assemble, grow, reorganize, and disassemble during physiological or pathological events. Several studies have indicated the active role of TJ in intestinal, renal, and airway epithelial function; however, the functional significance of TJ in salivary gland epithelium is poorly understood. Interactions between different combinations of the TJ family (each with their own unique regulatory proteins define tissue specificity and functions during physiopathological processes; however, these interaction patterns have not been studied in salivary glands. The purpose of this review is to analyze some of the current data regarding the regulatory components of the TJ that could potentially affect cellular functions of the salivary epithelium.

  5. Excimer laser annealing: A gold process for CZ silicon junction formation

    Science.gov (United States)

    Wong, David C.; Bottenberg, William R.; Byron, Stanley; Alexander, Paul

    A cold process using an excimer laser for junction formation in silicon has been evaluated as a way to avoid problems associated with thermal diffusion. Conventional thermal diffusion can cause bulk precipitation of SiOx and SiC or fail to completely activate the dopant, leaving a degenerate layer at the surface. Experiments were conducted to determine the feasibility of fabricating high quality p-n junctions using a pulsed excimer laser for junction formation at remelt temperature with ion-implanted surfaces. Solar-cell efficiency exceeding 16 percent was obtained using Czochralski single-crystal silicon without benefit of back surface field or surface passivation. Characterization shows that the formation of uniform, shallow junctions (approximately 0.25 micron) by excimer laser scanning preserves the minority carrier lifetime that leads to high current collection. However, the process is sensitive to initial surface conditions and handling parameters that drive the cost up.

  6. TiO2 coated CuO nanowire array: Ultrathin p-n heterojunction to modulate cationic/anionic dye photo-degradation in water

    Science.gov (United States)

    Scuderi, Viviana; Amiard, Guillaume; Sanz, Ruy; Boninelli, Simona; Impellizzeri, Giuliana; Privitera, Vittorio

    2017-09-01

    We report the photocatalytic efficiency of CuO nanowires covered with a thin TiO2 film, studied by dyes degradation in water. The CuO nanowires were synthesized on Cu foils by thermal oxidation. A subsequent TiO2 deposition (7, 15, 30, 50 nm thick) was performed by atomic layer deposition, developing an ultrathin p-n heterojunction. A structural characterization was obtained by X-ray diffraction analysis, scanning and transmission electron microscopies equipped with energy dispersive x-ray analysis. The photocatalytic activity of the investigated materials was tested by the degradation of a cationic (methylene blue) or anionic (methyl orange). The relevance of the reported results was discussed in relation with the effects of the ultrathin p-n TiO2/CuO heterojunction. The two semiconductors are in intimate connection increasing the exposed surface and only TiO2 is directly in contact with water. This allowed to study systematically the effect of the electric filed generated by the p-n junction on the interface TiO2/liquid and therefore to modulate cationic/anionic dyes photo-degradation in water.

  7. An induced junction photovoltaic cell

    Science.gov (United States)

    Call, R. L.

    1974-01-01

    Silicon solar cells operating with induced junctions rather than diffused junctions have been fabricated and tested. Induced junctions were created by forming an inversion layer near the surface of the silicon by supplying a sheet of positive charge above the surface. Measurements of the response of the inversion layer cell to light of different wavelengths indicated it to be more sensitive to the shorter wavelengths of the sun's spectrum than conventional cells. The greater sensitivity occurs because of the shallow junction and the strong electric field at the surface.

  8. A QCD analysis of \\bar p N -> gamma^* pi and \\bar p N -> gamma^* gamma. Where is the pion in the proton ?

    CERN Document Server

    Pire, B

    2005-01-01

    We study the scaling regime of nucleon-anti-nucleon annihilation into a deeply virtual photon and a photon or meson, \\bar p N -> gamma ^* pi, \\bar p N -> gamma ^* gamma, in the forward direction. The leading twist amplitude factorizes into an antiproton distribution amplitude, a short-distance matrix element and a long-distance dominated transition distribution amplitude (TDA) which describes the nucleon to meson or photon transition. The impact representation of this TDA maps out the transverse locations of the small size core and the meson or photon cloud inside the proton.

  9. Low dark current P-InAsSbP/n-InAs/N-InAsSbP/n+-InAs double heterostructure back-side illuminated photodiodes

    Science.gov (United States)

    Brunkov, P. N.; Il'inskaya, N. D.; Karandashev, S. A.; Karpukhina, N. G.; Lavrov, A. A.; Matveev, B. A.; Remennyi, M. A.; Stus', N. M.; Usikova, A. A.

    2016-05-01

    P-InAsSbP/n-InAs/N-InAsSbP/n+-InAs double heterostructure photodiodes with linear impurity distribution in the space charge region have been fabricated and studied. The photodiodes showed good perspectives for use in low temperature pyrometry as low dark current (8·10-6 A/cm2, Vbias = -0.5 V, 164 K) and background limited infrared photodetector (BLIP) regime starting from 150 K (2π field of view, D3.1μm ∗ = 1.4·1012 cm Hz1/2/W) have been demonstrated.

  10. RADIOLOGICAL EVALUATION OF CRANIOVERTEBRAL JUNCTION ANOMALIES

    Directory of Open Access Journals (Sweden)

    Joji Reddy

    2015-08-01

    Full Text Available INTRODUCTION: Detailed discussions of the CVJ are conspicuously absent in many standard textbooks and chapters addressing the skull or cervical spine, since it lies in between these regions . CVJ anomalies are common in India subcontinent. OBJECTIVES : To outline the normal anatomy and various abnormalities of craniovertebral junction. To evaluate the most common developmental and acquired craniovertebral junction abnormalities . CRANIOMETRY AND DIAGNOSIS: Radiological evaluation of CVJ requir es identification of only a few anatomic structures. Over the years multiple lines , planes and angles have been described for assessment of CVJ relationship , initially with radiography and later with polytomography. Two lines have remained particularly use ful for evaluation of CVJ relationship with virtually any imaging modality: the chamberlain`s line and weckenheim ’ s clivus base line . Two angles also continue to be useful: the welcher basal angle and atlanto occipital joint axis angle. PATIENTS AND METHOD S: The prospective study of craniovertebral junction anomalies was carried out at Kurnool medical college , Governament general hospital Kurnool from NOV 2012 to AUG 2014. The patients are subjected to clinical evaluation and radiological evaluation. OBSERV ATIONS AND RESULTS : In our study there is male predominance with male to female ratio of 2:1 . Majority of patients are in the age group of 11 - 40 (73.26%. The commonest symptom seen is weakness of extremities ( 70% with associated numbness (50%. On clinica l examination pyramidal tract involvement noticed in 70% of cases. Basilar invagination is the most common followed by Atlantoocoipital assimilation (40% and AAD (30% . CONCLUSION : Computed tomography and magnetic resonance imaging are invalvable adjuncts to the plain radiographs in the evaluation of the craniovertebral junction anomalies. Chamberlain’s line and McGregor line are the most commonly applied craniometric measurements

  11. Effective medium theory of the space-charge region electrostatics of arrays of nanoscale junctions

    Science.gov (United States)

    Gurugubelli, Vijaya Kumar; Karmalkar, Shreepad

    2016-01-01

    We develop an Effective Medium Theory for the electrostatics of the Space-Charge Region (SCR) of Schottky and p-n junctions in arrays of nanofilms (NFs), nanowires (NWs), and nanotubes (NTs) in a dielectric ambient. The theory captures the effects of electric fields in both the semiconductor, i.e., NF/NW/NT, and the dielectric media of the array. It shows that the depletion width and the screening length characterizing the SCR tail in the array correspond to those in a bulk junction with an effective semiconductor medium, whose permittivity and doping are their weighted averages over the cross-sectional areas of the semiconductor and dielectric; the shapes of the cross-sections are immaterial. Further, the reverse bias 1 /C2 -V behavior of junctions in NF/NW/NT arrays is linear, as in bulk junctions, and is useful to extract from measurements the built-in potential, effective doping including the semiconductor-dielectric interface charge, and NF/NW/NT length. The theory is validated with numerical simulations, is useful for the experimentalist, and yields simple formulas for nano-device design which predict the following. In the limiting case of a single sheet-like NF, the junction depletion width variation with potential drop is linear rather than square-root (as in a bulk junction). In arrays of symmetric silicon p-n junctions in oxide dielectric where NF/NW thickness and separation are 5% and 100% of the bulk depletion width, respectively, the junction depletion width and the screening length are scaled up from their bulk values by the same factor of ˜2 for NF and ˜10 for NW array.

  12. Numerical analysis of open-hole multilateral completions minimizes the risk of costly junction failures

    Energy Technology Data Exchange (ETDEWEB)

    Suarez-Rivera, Roberto; Martin, J. Wesley [TerraTek, Rio de Janeiro, RJ (Brazil); Begnaud, Bill J. [BHP Billiton Petroleum (Americas) Inc. (United States)

    2004-07-01

    This paper discusses the numerical (3D FEA) modeling of open hole, horizontal, multilateral junctions, to evaluate their mechanical stability under various conditions of junction length, junction orientation, in-situ stress, and rock strength, during drilling and production operations. The objective of the numerical analysis is to evaluate the risk of multilateral junction failure associated to changes in the above parameters for the prediction of minimum rock strength (UCS) required for placing the junction, and for minimizing the risk of junction failure, under various conditions of drawdown and depletion. Results provide clear guidelines for multilateral junction construction (i.e., multilateral geometry), placement (i.e., minimum required rock strength) and safe conditions of operation (i.e., drawdown and depletion). Results also provide critical conditions of drawdown and depletion as a function of rock strength. Furthermore, 3D FEA results show that because of the asymmetry in the junction geometry, the resulting bending moments that develop along the mother-bore and the lateral wellbores reduce the mechanical stability of the multilateral junction. This effect cannot be adequately represented by 2D plane-strain solutions. The discussed methodology will minimize the risk of junction failures resulting in considerable savings to the operator. (author)

  13. Strong enhancement of the luminescence decay time of isoelectronic centers in GaP:N at low temperatures

    Science.gov (United States)

    St-Jean, Philippe; Ethier-Majcher, Gabriel; Bergeron, Alaric; Francoeur, Sebastien

    2013-03-01

    We report (i)- results from ac impedance measurements obtained for intrinsic indium oxide films, grown under O2-rich conditions, (ii)- current-voltage (I-V) curves for p-n homojunctions fabricated by sequential growth of a 200 nm thick p-type In2O3 layer on a 400 nm thick n-type In2O3, and (iii)- capacitance-voltage (C-V) curves for these junctions. Impedance as well as I-V and C-V measurements were performed under UV irradiation and in darkness. We find two distinct contributions to the ac conductivity. One of them is brought about by grain boundaries, and the other one by inversion layers, which are on grain surfaces. In addition, we have found that photocurrents relax extremely slowly in these films. All of this fits consistently within a model in which mobile holes in inversion layers are responsible for p-type dc conductivity in intrinsic indium oxide films grown under O2-rich conditions. Such mechanism might be important in other polycrystalline thin films which have a large number of oxidizing defects at grain boundaries. We acknowledge support from grant MAT2012-38213-C02-01, from the Ministerio de Economia y Competividad, Spain.

  14. Oxide p-n Heterojunction of Cu2O/ZnO Nanowires and Their Photovoltaic Performance

    Directory of Open Access Journals (Sweden)

    Seung Ki Baek

    2013-01-01

    Full Text Available Oxide p-n heterojunction devices consisting of p-Cu2O/n-ZnO nanowires were fabricated on ITO/glass substrates and their photovoltaic performances were investigated. The vertically arrayed ZnO nanowires were grown by metal organic chemical vapor deposition, which was followed by the electrodeposition of the p-type Cu2O layer. Prior to the fabrication of solar cells, the effect of bath pH on properties of the absorber layers was studied to determine the optimal condition of the Cu2O electrodeposition process. With the constant pH 11 solution, the Cu2O layer preferred the (111 orientation, which gave low electrical resistivity and high optical absorption. The Cu2O (pH 11/ZnO nanowire-based solar cell exhibited a higher conversion efficiency of 0.27% than the planar structure solar cell (0.13%, because of the effective charge collection in the long wavelength region and because of the enhanced junction area.

  15. Electrolytic phototransistor based on graphene-MoS2 van der Waals p-n heterojunction with tunable photoresponse

    Science.gov (United States)

    Henck, Hugo; Pierucci, Debora; Chaste, Julien; Naylor, Carl H.; Avila, Jose; Balan, Adrian; Silly, Mathieu G.; Asensio, Maria C.; Sirotti, Fausto; Johnson, A. T. Charlie; Lhuillier, Emmanuel; Ouerghi, Abdelkarim

    2016-09-01

    Van der Waals (vdW) heterostructures obtained by stacking 2D materials offer a promising route for next generation devices by combining different unique properties in completely new artificial materials. In particular, the vdW heterostructures combine high mobility and optical properties that can be exploited for optoelectronic devices. Since the p-n junction is one of the most fundamental units of optoelectronics, we propose an approach for its fabrication based on the intrinsic n doped MoS2 and the p doped bilayer graphene hybrid interfaces. We demonstrate the control of the photoconduction properties using electrolytic gating which ensures a low bias operation. We show that by finely choosing the doping value of each layer, the photoconductive properties of the hybrid system can be engineered to achieve magnitude and sign control of the photocurrent. Finally, we provide a simple phase diagram relating the photoconductive behavior with the chosen doping, which we believe can be very useful for the future design of the van der Waals based photodetectors.

  16. Mixing in T-junctions

    NARCIS (Netherlands)

    Kok, Jacobus B.W.; van der Wal, S.

    1996-01-01

    The transport processes that are involved in the mixing of two gases in a T-junction mixer are investigated. The turbulent flow field is calculated for the T-junction with the k- turbulence model by FLOW3D. In the mathematical model the transport of species is described with a mixture fraction

  17. GaAs nanowire array solar cells with axial p-i-n junctions.

    Science.gov (United States)

    Yao, Maoqing; Huang, Ningfeng; Cong, Sen; Chi, Chun-Yung; Seyedi, M Ashkan; Lin, Yen-Ting; Cao, Yu; Povinelli, Michelle L; Dapkus, P Daniel; Zhou, Chongwu

    2014-06-11

    Because of unique structural, optical, and electrical properties, solar cells based on semiconductor nanowires are a rapidly evolving scientific enterprise. Various approaches employing III-V nanowires have emerged, among which GaAs, especially, is under intense research and development. Most reported GaAs nanowire solar cells form p-n junctions in the radial direction; however, nanowires using axial junction may enable the attainment of high open circuit voltage (Voc) and integration into multijunction solar cells. Here, we report GaAs nanowire solar cells with axial p-i-n junctions that achieve 7.58% efficiency. Simulations show that axial junctions are more tolerant to doping variation than radial junctions and lead to higher Voc under certain conditions. We further study the effect of wire diameter and junction depth using electrical characterization and cathodoluminescence. The results show that large diameter and shallow junctions are essential for a high extraction efficiency. Our approach opens up great opportunity for future low-cost, high-efficiency photovoltaics.

  18. Fabrication and characterization of p-ZnO:(P,N)/n-ZnO:Al homojunction ultra-violet (UV) light emitting diodes (Presentation Recording)

    Science.gov (United States)

    Rafiudeen, Amiruddin; Reddy, T. Srinivasa; Cheemadan, Shaheer; Kumar, M. C. Santhosh

    2015-10-01

    ZnO possess distinctive characteristics such as low cost, wide band gap (3.36 eV) and large exciton binding energy (60meV). As the band gap lies in ultra violet (UV) region, ZnO is considered as a novel material for the fabrication of ultra violet light emitting diodes (UV-LEDs). However, ZnO being intrinsic n-type semiconductor the key challenge lies in realization of stable and reproducible p-type ZnO. In the present research dual acceptor group-V elements such as P and N are simultaneously doped in ZnO films to obtain the p-type characteristics. The deposition is made by programmable spray pyrolysis technique upon glass substrates at 697K. The optimum doping concentration of P and N were found to be 0.75 at% which exhibits hole concentration of 4.48 x 10^18 cm-3 and resistivity value of 9.6 Ω.cm. The deposited p-ZnO were found to be stable for a period over six months. Highly conducting n-type ZnO films is made by doping aluminum (3 at%) which exhibits higher electron concentration of 1.52 x 10^19 cm-3 with lower electrical resistivity of 3.51 x 10-2 Ω.cm. The structural, morphological, optical and electrical properties of the deposited n-ZnO and p-ZnO thin films are investigated. An efficient p-n homojunction has been fabricated using the optimum p-ZnO:(P,N) and n-ZnO:Al layers. The current-voltage (I-V) characteristics show typical rectifying characteristics of p-n junction with a low turn on voltage. Electroluminescence (EL) studies reveals the fabricated p-n homojunction diodes exhibits strong emission features in ultra-violet (UV) region around 378 nm.

  19. Semiconductor device PN junction fabrication using optical processing of amorphous semiconductor material

    Science.gov (United States)

    Sopori, Bhushan; Rangappan, Anikara

    2014-11-25

    Systems and methods for semiconductor device PN junction fabrication are provided. In one embodiment, a method for fabricating an electrical device having a P-N junction comprises: depositing a layer of amorphous semiconductor material onto a crystalline semiconductor base, wherein the crystalline semiconductor base comprises a crystalline phase of a same semiconductor as the amorphous layer; and growing the layer of amorphous semiconductor material into a layer of crystalline semiconductor material that is epitaxially matched to the lattice structure of the crystalline semiconductor base by applying an optical energy that penetrates at least the amorphous semiconductor material.

  20. Photodetection in p–n junctions formed by electrolyte-gated transistors of two-dimensional crystals

    KAUST Repository

    Kozawa, Daichi

    2016-11-16

    Transition metal dichalcogenide monolayers have attracted much attention due to their strong light absorption and excellent electronic properties. These advantages make this type of two-dimensional crystal a promising one for optoelectronic device applications. In the case of photoelectric conversion devices such as photodetectors and photovoltaic cells, p–n junctions are one of the most important devices. Here, we demonstrate photodetection with WSe2 monolayer films. We prepare the electrolyte-gated ambipolar transistors and electrostatic p–n junctions are formed by the electrolyte-gating technique at 270 K. These p-n junctions are cooled down to fix the ion motion (and p-n junctions) and we observed the reasonable photocurrent spectra without the external bias, indicating the formation of p-n junctions. Very interestingly, two-terminal devices exhibit higher photoresponsivity than that of three-terminal ones, suggesting the formation of highly balanced anion and cation layers. The maximum photoresponsivity reaches 5 mA/W in resonance with the first excitonic peak. Our technique provides important evidence for optoelectronics in atomically thin crystals.

  1. A modular approach to neutral P,N-ligands: synthesis and coordination chemistry

    Science.gov (United States)

    Blasius, Clemens K; Intorp, Sebastian N; Wadepohl, Hubert

    2016-01-01

    Summary We report the modular synthesis of three different types of neutral κ2-P,N-ligands comprising an imine and a phosphine binding site. These ligands were reacted with rhodium, iridium and palladium metal precursors and the structures of the resulting complexes were elucidated by means of X-ray crystallography. We observed that subtle changes of the ligand backbone have a significant influence on the binding geometry und coordination properties of these bidentate P,N-donors. PMID:27340475

  2. Orientational order parameter, S, in N-(p-n-ethoxy benzylidene)-p-n-alkoxy anilines, 2O.Om LC compounds

    Science.gov (United States)

    Sastry, P. S.; Srinivasu, Ch.; Pardhasaradhi, P.; Pisipati, V. G. K. M.

    2016-01-01

    The orientational order parameter, S, is estimated in N-(p-n-ethoxy benzylidene)-p-n-alkoxy anilines, 2O.Om liquid crystalline (LC) compounds with alkoxy chain number, m = 3, 4, and 6-10 using four different methods. The methods employed are (1) from birefringence, ? where ne and no are extraordinary and ordinary refractive indices, (2) from effective geometry parameter, αg, where α = no/ne, (3) from the Haller approximation (1 - T/TNIβ where β is obtained from method (1), and (4) the Maier and Saupe method from density. In the four methods proposed no field is chosen to explain the nematic liquid crystal and provides the S values obtained are identical to one another except in the case of 2O.O9 compound where the S values are higher when compared to the others. All the methods are explained in detail.

  3. Modeling the time-dependent transient radiation response of semiconductor junctions

    Science.gov (United States)

    Wunsch, T. F.; Axness, C. L.

    1992-12-01

    Analytical one-dimensional time-dependent photocurrent models are developed from new solutions to the ambipolar transport equation. The p-n junction model incorporates the effects of an electric field in the quasi-neutral region, finite diode length, and an arbitrary generation function g = f(x,t). It provides improved accuracy over the Wirth-Rogers and Enlow-Alexander models. An approximate photocurrent solution for p-n-n(+), n-p-p(+), and p-i-n diode junctions is developed considering high-injection effects. Comparison with experimental data shows that a single set of physical parameters is adequate to characterize the model with respect to dose rate, pulse width, and geometry.

  4. Photoinduced carrier annihilation in silicon pn junction

    Science.gov (United States)

    Sameshima, Toshiyuki; Motoki, Takayuki; Yasuda, Keisuke; Nakamura, Tomohiko; Hasumi, Masahiko; Mizuno, Toshihisa

    2015-08-01

    We report analysis of the photo-induced minority carrier effective lifetime (τeff) in a p+n junction formed on the top surfaces of a n-type silicon substrate by ion implantation of boron and phosphorus atoms at the top and bottom surfaces followed by activation by microwave heating. Bias voltages were applied to the p+ boron-doped surface with n+ phosphorus-doped surface kept at 0 V. The values of τeff were lower than 1 × 10-5 s under the reverse-bias condition. On the other hand, τeff markedly increased to 1.4 × 10-4 s as the forward-bias voltage increased to 0.7 V and then it leveled off when continuous-wave 635 nm light was illuminated at 0.74 mW/cm2 on the p+ surface. The carrier annihilation velocity S\\text{p + } at the p+ surface region was numerically estimated from the experimental τeff. S\\text{p + } ranged from 4000 to 7200 cm/s under the reverse-bias condition when the carrier annihilation velocity S\\text{n + } at the n+ surface region was assumed to be a constant value of 100 cm/s. S\\text{p + } markedly decreased to 265 cm/s as the forward-bias voltage increased to 0.7 V.

  5. Imaging of cervicothoracic junction trauma

    Directory of Open Access Journals (Sweden)

    Wongwaisayawan S

    2013-01-01

    Full Text Available Sirote Wongwaisayawan,1 Ruedeekorn Suwannanon,2 Rathachai Kaewlai11Department of Radiology, Ramathibodi Hospital and Mahidol University, Bangkok, Thailand; 2Department of Radiology, Faculty of Medicine, Prince of Songkla University, Hat Yai, ThailandAbstract: Cervicothoracic junction trauma is an important cause of morbidity and mortality in trauma patients. Imaging has played an important role in identifying injuries and guiding appropriate, timely therapy. Computed tomography is currently a method of choice for diagnosing cervicothoracic junction trauma, in which the pattern of injuries often suggests possible mechanisms and potential injuries. In this article, the authors describe and illustrate common and uncommon injuries that can occur in the cervicothoracic junction.Keywords: cervicothoracic junction, cervical spine, trauma, imaging, radiology

  6. Perimeter Governed Minority Carrier Lifetimes in 4H-SiC p+n Diodes Measured by Reverse Recovery Switching Transient Analysis

    Science.gov (United States)

    Neudeck, Philip G.

    1998-01-01

    Minority carrier lifetimes in epitaxial 4H-SiC p-n junction diodes were measured via an analysis of reverse recovery switching characteristics. Behavior of reverse recovery storage time (t(sub s)) as a function of initial ON-state forward current (I(sub f)) and OFF-state reverse current (I(sub R)) followed well-documented trends which have been observed for decades in silicon p-n rectifiers. Average minority carrier (hole) lifetimes (tau(sub p)) calculated from plots of t(sub s) vs I(sub R)/I(sub F) strongly decreased with decreasing device area. Bulk and perimeter components of average hole lifetimes were separated by plotting tau(sub p) as a function of device perimeter-to-area ratio (P/A). This plot reveals that perimeter recombination is dominant in these devices, whose areas are all less than 1 square mm. The bulk minority carrier (hole) lifetime extracted from the 1/Tau(sub p) vs P/A plot is approximately 0.7 microns, well above the 60 ns to 300 ns average lifetimes obtained when perimeter recombination effects are ignored in the analysis. Given the fact that there has been little previous investigation of bipolar diode and transistor performance as a function of perimeter-to-area ratio, this work raises the possibility that perimeter recombination may be partly responsible for poor effective minority carrier lifetimes and limited performance obtained in many previous SiC bipolar junction devices.

  7. Isolated popliteus rupture at the musculo-tendinous junction.

    Science.gov (United States)

    Quinlan, John F; Webb, Sandra; McDonald, Karl; Meikle, Grant; McMahon, Simon F

    2011-06-01

    We report the case of a 23-year-old professional senior international rugby union player who sustained a lateral blow to his semiflexed knee during a competitive game. Initial clinical examination was unremarkable apart from some posterolateral tenderness. A magnetic resonance imaging scan showed an isolated popliteus tendon rupture at the musculo-tendinous junction. After 5 weeks of focused rehabilitation and graduated training, he was able to resume his playing career and resumed his international playing career later that season. At the time of reporting, he has completed a full domestic and international season without any sequelae from the injury. This report highlights the rarity of such an injury, especially at the musculo-tendinous junction, and sets out a detailed rehabilitation program that has enabled the patient in question to resume his playing career.

  8. Demonstrated Anomalous Pancreaticobiliary Ductal Junction

    OpenAIRE

    Koçkar, Cem; ?ENOL, Altu?; BA?TÜRK, Abdulkadir; AYDIN, Bünyamin; Cüre, Erkan

    2015-01-01

    Anomalies of the pancreaticobiliary junction are rare. Clinically anomalies of the pancreaticobiliary junction are uncommonly symptomatic but may present themselves with associated conditions ranging from benign acute abdominal pain to carcinomas. A 52 years old man was admitted to gastroenterology service with complaints of fever, nausea, vomiting and recurrent epigastric pain. He was diagnosed with biliary pancreatitis. Endoscopic retrograde cholangiopancreato-graphy was performed. Papilla ...

  9. Josephson junctions with ferromagnetic interlayer

    Energy Technology Data Exchange (ETDEWEB)

    Wild, Georg Hermann

    2012-03-04

    We report on the fabrication of superconductor/insulator/ferromagnetic metal/superconductor (Nb/AlO{sub x}/Pd{sub 0.82}Ni{sub 0.18}/Nb) Josephson junctions (SIFS JJs) with high critical current densities, large normal resistance times area products, and high quality factors. For these junctions, a transition from 0- to {pi}-coupling is observed for a thickness d{sub F}=6 nm of the ferromagnetic Pd{sub 0.82}Ni{sub 0.18} interlayer. The magnetic field dependence of the critical current of the junctions demonstrates good spatial homogeneity of the tunneling barrier and ferromagnetic interlayer. Magnetic characterization shows that the Pd{sub 0.82}Ni{sub 0.18} has an out-of-plane anisotropy and large saturation magnetization indicating negligible dead layers at the interfaces. A careful analysis of Fiske modes up to about 400 GHz provides valuable information on the junction quality factor and the relevant damping mechanisms. Whereas losses due to quasiparticle tunneling dominate at low frequencies, at high frequencies the damping is explained by the finite surface resistance of the junction electrodes. High quality factors of up to 30 around 200 GHz have been achieved. They allow to study the junction dynamics, in particular the switching probability from the zero-voltage into the voltage state with and without microwave irradiation. The experiments with microwave irradiation are well explained within semi-classical models and numerical simulations. In contrast, at mK temperature the switching dynamics without applied microwaves clearly shows secondary quantum effects. Here, we could observe for the first time macroscopic quantum tunneling in Josephson junctions with a ferromagnetic interlayer. This observation excludes fluctuations of the critical current as a consequence of an unstable magnetic domain structure of the ferromagnetic interlayer and affirms the suitability of SIFS Josephson junctions for quantum information processing.

  10. Electronic thermometry in tunable tunnel junction

    Energy Technology Data Exchange (ETDEWEB)

    Maksymovych, Petro

    2016-03-15

    A tunable tunnel junction thermometry circuit includes a variable width tunnel junction between a test object and a probe. The junction width is varied and a change in thermovoltage across the junction with respect to the change in distance across the junction is determined. Also, a change in biased current with respect to a change in distance across the junction is determined. A temperature gradient across the junction is determined based on a mathematical relationship between the temperature gradient, the change in thermovoltage with respect to distance and the change in biased current with respect to distance. Thermovoltage may be measured by nullifying a thermoelectric tunneling current with an applied voltage supply level. A piezoelectric actuator may modulate the probe, and thus the junction width, to vary thermovoltage and biased current across the junction. Lock-in amplifiers measure the derivatives of the thermovoltage and biased current modulated by varying junction width.

  11. Confocal Annular Josephson Tunnel Junctions

    Science.gov (United States)

    Monaco, Roberto

    2016-09-01

    The physics of Josephson tunnel junctions drastically depends on their geometrical configurations and here we show that also tiny geometrical details play a determinant role. More specifically, we develop the theory of short and long annular Josephson tunnel junctions delimited by two confocal ellipses. The behavior of a circular annular Josephson tunnel junction is then seen to be simply a special case of the above result. For junctions having a normalized perimeter less than one, the threshold curves in the presence of an in-plane magnetic field of arbitrary orientations are derived and computed even in the case with trapped Josephson vortices. For longer junctions, a numerical analysis is carried out after the derivation of the appropriate motion equation for the Josephson phase. We found that the system is modeled by a modified and perturbed sine-Gordon equation with a space-dependent effective Josephson penetration length inversely proportional to the local junction width. Both the fluxon statics and dynamics are deeply affected by the non-uniform annulus width. Static zero-field multiple-fluxon solutions exist even in the presence of a large bias current. The tangential velocity of a traveling fluxon is not determined by the balance between the driving and drag forces due to the dissipative losses. Furthermore, the fluxon motion is characterized by a strong radial inward acceleration which causes electromagnetic radiation concentrated at the ellipse equatorial points.

  12. Gap junctions in the nervous system.

    Science.gov (United States)

    Rozental, R; Giaume, C; Spray, D C

    2000-04-01

    Synapses are classically defined as close connections between two nerve cells or between a neuronal cell and a muscle or gland cell across which a chemical signal (i.e., a neurotransmitter) and/or an electrical signal (i.e., current-carrying ions) can pass. The definition of synapse was developed by Charles Sherrington and by Ramon y Cajal at the beginning of this century and refined by John Eccles and Bernard Katz 50 years later; in this collection of papers, the definition of synapses is discussed further in the chapter by Mike Bennett. who provided the first functional demonstration of electrical transmission via gap junction channels between vertebrate neurons. As is evidenced by the range of topics covered in this issue, research dealing with gap junctions in the nervous system has expanded enormously in the past decade, major findings being that specific cell types in the brain expresses specific types of connexins and that expression patterns coincide with tissue compartmentalization and function and that these compartments change during development.

  13. Octagonal Defects at Carbon Nanotube Junctions

    Science.gov (United States)

    Jaskólski, W.; Pelc, M.; Chico, Leonor; Ayuela, A.

    2013-01-01

    We investigate knee-shaped junctions of semiconductor zigzag carbon nanotubes. Two dissimilar octagons appear at such junctions; one of them can reconstruct into a pair of pentagons. The junction with two octagons presents two degenerate localized states at Fermi energy (EF). The reconstructed junction has only one state near EF, indicating that these localized states are related to the octagonal defects. The inclusion of Coulomb interaction splits the localized states in the junction with two octagons, yielding an antiferromagnetic system. PMID:24089604

  14. Effect of Magnetite Nano Particles on p-n-Alkyl Benzoic Acid Mesogens

    Directory of Open Access Journals (Sweden)

    S. Sreehari Sastry

    2012-01-01

    Full Text Available The magnetite (Fe3O4 nanoparticles (0.5 wt% of size less than 20 nm doped in p-n-alkyl benzoic acids where n varies from heptyl (7 to nonyl (9 are prepared and the presence of Fe+3 is confirmed through UV-Visible spectrophotometer. Textural and phase transition temperature studies are carried out using polarizing optical microscopy on pure and nano doped p-n-alkyl benzoic acids. These results are further confirmed by DSC at a scan rate of 5ºC/min and dielectric studies. Dielectric studies are carried out, in which the variation of dielectric constant, loss and the conductivity are analyzed with respect to temperatures and frequencies. Increment of relaxation times for nano doped heptyl and nonyl benzoic acids are observed which implies that the dielectric nature is strengthened for the nano doped mesogens. The preference of nano doped p-n-alkyl benzoic acids is discussed.

  15. Switching current density reduction in perpendicular magnetic anisotropy spin transfer torque magnetic tunneling junctions

    Energy Technology Data Exchange (ETDEWEB)

    You, Chun-Yeol [Department of Physics, Inha University, Incheon 402-751 (Korea, Republic of)

    2014-01-28

    We investigate the switching current density reduction of perpendicular magnetic anisotropy spin transfer torque magnetic tunneling junctions using micromagnetic simulations. We find that the switching current density can be reduced with elongated lateral shapes of the magnetic tunnel junctions, and additional reduction can be achieved by using a noncollinear polarizer layer. The reduction is closely related to the details of spin configurations during switching processes with the additional in-plane anisotropy.

  16. Ruptured venous aneurysm of cervicomedullary junction

    Directory of Open Access Journals (Sweden)

    Ashish Aggarwal

    2014-01-01

    Full Text Available Background: Ruptured venous aneurysm is often seen with arterio-venous malformation (AVM or developmental venous anomaly (DVA. However, isolated venous aneurysm is unusual. Case Description: We present a case of ruptured venous aneurysm that presented with subarachnoid hemorrhage (SAH and intraventricular hemorrhage (IVH. Digital substraction angiography (DSA revealed a saccular contrast filling pouch in the left lateral aspect of cervicomedullary junction (CMJ. Endovascular intervention was not a viable option. During surgery, a saccular pliable structure approx. 1.5 Χ 1 cm was found in the subarachnoid space that was clipped and excised. There were no arterial feeders, no evidence of surrounding AVM, and no dilated perimedullary vein. Conclusion: This is perhaps the first reported case of ruptured venous aneurysm (without associated AVM of CMJ, which was successfully managed surgically. The possible etiologies remain an unnoticed head trauma or a congenital vessel wall abnormality. Surgically clipping and excision remains the treatment of choice for such lesion.

  17. Forward voltage short-pulse technique for measuring high power laser array junction temperature

    Science.gov (United States)

    Meadows, Byron L. (Inventor); Amzajerdian, Frazin (Inventor); Barnes, Bruce W. (Inventor); Baker, Nathaniel R. (Inventor)

    2012-01-01

    The present invention relates to a method of measuring the temperature of the P-N junction within the light-emitting region of a quasi-continuous-wave or pulsed semiconductor laser diode device. A series of relatively short and low current monitor pulses are applied to the laser diode in the period between the main drive current pulses necessary to cause the semiconductor to lase. At the sufficiently low current level of the monitor pulses, the laser diode device does not lase and behaves similar to an electronic diode. The voltage across the laser diode resulting from each of these low current monitor pulses is measured with a high degree of precision. The junction temperature is then determined from the measured junction voltage using their known linear relationship.

  18. Effect of asymmetric molecule-electrode coupling and molecular bias on rectification in molecular junctions

    Science.gov (United States)

    Kaur, Rupan Preet; Sawhney, Ravinder Singh; Engles, Derick

    2016-12-01

    In this research work, we compare the rectification trends of two symmetrical and one asymmetrical molecular junction formed with gold and silver electrodes bridging benzenedithiol molecule. The origin of rectification is attributed to both molecular bias drop and asymmetric molecule-electrode coupling. The electronic transport properties are computed by using semi-empirical extended Huckel method combined with non-equilibrium Green's function framework. The results are fully rationalized by analysing the distribution of molecular orbitals with changing bias voltage, available density of states and area of transmission spectra spanned within bias window, transmission eigenstates and transmission pathways. We deduce through this work that the molecular rectification is not only the property of asymmetric molecule-metal coupling, but molecular bias also plays vital role in stemming asymmetric I- V characteristics. Our results suggest how to realize molecular rectification by using different electrode materials which act as Schottky barriers in molecular junctions that emulate p-n junction diode in semiconductor electronics.

  19. Josephson instantons and Josephson monopoles in a non-Abelian Josephson junction

    CERN Document Server

    Nitta, Muneto

    2015-01-01

    Non-Abelian Josephson junction is a junction of non-Abelian color superconductors sandwiching an insulator, or non-Abelian domain wall if flexible, whose low-energy dynamics is described by a $U(N)$ principal chiral model with the conventional pion mass. A non-Abelian Josephson vortex is a non-Abelian vortex (color magnetic flux tube) residing inside the junction, that is described as a non-Abelian sine-Gordon soliton. In this paper, we propose Josephson instantons and Josephson monopoles, that is, Yang-Mills instantons and monopoles inside a non-Abelian Josephson junction, respectively, and show that they are described as $SU(N)$ Skyrmions and $U(1)^{N-1}$ vortices in the $U(N)$ principal chiral model without and with a twisted mass term, respectively. Instantons with a twisted boundary condition are reduced (or T-dual) to monopoles, implying that ${\\mathbb C}P^{N-1}$ lumps are T-dual to ${\\mathbb C}P^{N-1}$ kinks inside a vortex. Here we find $SU(N)$ Skyrmions are T-dual to $U(1)^{N-1}$ vortices inside a wa...

  20. Theoretical study on pp --> p n pi+ reaction at medium energies

    CERN Document Server

    Ouyang, Z; Zou, B S; Xu, H S

    2009-01-01

    The $pp\\to p n \\pi^+$ reaction is a channel with the largest total cross section for pp collision in COSY/CSR energy region. In this work, we investigate individual contributions from various $N^*$ and $\\Delta^{*}$ resonances with mass up to about 2 GeV for the $pp\\to p n \\pi^+$ reaction. We extend a resonance model, which can reproduce the observed total cross section quite well, to give theoretical predictions of various differential cross sections for the present reaction at $T_p=2.88$ GeV. It could serve as a reference for identifying new physics in the future experiments at HIRFL-CSR.

  1. Application of P,N-sulfinyl imine ligands to iridium-catalyzed asymmetric hydrogenation of olefins.

    Science.gov (United States)

    Schenkel, Laurie B; Ellman, Jonathan A

    2004-03-19

    The utility of a novel class of P,N-ligands incorporating a chiral sulfinyl imine moiety is demonstrated in the iridium-catalyzed hydrogenation of both functionalized and unfunctionalized olefins, in which enantioselectivities of up to 94% are achieved. The modularity of the P,N-sulfinyl ligand class is highlighted by the facile preparation of a variety of sterically and electronically different ligands. Interesting structure-activity data for both the phosphine and sulfinamide components is provided by this expanded ligand set.

  2. An Algorithmic Characterization of Polynomial Functions over Z_{p^n}

    CERN Document Server

    Guha, Ashwin

    2012-01-01

    In this paper we consider polynomial representability of functions defined over Z_{p^n}, where p is a prime and n is a positive integer. Our aim is to provide an algorithmic characterization that answers the decision problem: to determine whether a given function over Z_{p^n} is polynomially representable or not. The previous characterizations given by Carlitz (1964) and Kempner (1921) are existential in nature and only lead to an exhaustive search method, i.e. algorithm with complexity exponential in size of the input. We present a new characterization which leads to an algorithm whose running time is linear in size of input.

  3. Modelling of Dual-Junction Solar Cells including Tunnel Junction

    Directory of Open Access Journals (Sweden)

    Abdelaziz Amine

    2013-01-01

    Full Text Available Monolithically stacked multijunction solar cells based on III–V semiconductors materials are the state-of-art of approach for high efficiency photovoltaic energy conversion, in particular for space applications. The individual subcells of the multi-junction structure are interconnected via tunnel diodes which must be optically transparent and connect the component cells with a minimum electrical resistance. The quality of these diodes determines the output performance of the solar cell. The purpose of this work is to contribute to the investigation of the tunnel electrical resistance of such a multi-junction cell through the analysis of the current-voltage (J-V characteristics under illumination. Our approach is based on an equivalent circuit model of a diode for each subcell. We examine the effect of tunnel resistance on the performance of a multi-junction cell using minimization of the least squares technique.

  4. Photoelectric Characteristic of La0.9Sr0.1MnO3/SrNb0.01Ti0.99O3 p-n Heterojunctions

    Institute of Scientific and Technical Information of China (English)

    HUANG Yan-Hong; JIN Kui-Juan; ZHAO Kun; L(U) Hui-Bin; HE Meng; CHEN Zheng-Hao; ZHOU Yue-Liang; YANG Guo-Zhen; MA Xiu-Liang

    2006-01-01

    @@ Good rectifying current-voltage characteristics and nanosecond photoelectric effects are observed in the p-n heterojunctions of La0.gSr0.1MnO3/SrNb0.01 Ti0.99O3 fabricated by laser molecular beam epitaxy. The rise time is about 26ns and the full width at half maximum is about 125ns for the open-circuit photovoltaic pulses when the La0.gSr0.1MnOs film in the heterojunction is irradiated by a laser operated at wavelength 308nm with pulse duration of about 25 ns. A qualitative explanation is presented, based on an analysis of the photoelectric effect of p-n hetero junction.

  5. Wnt and Extraocular Muscle Sparing in Amyotrophic Lateral Sclerosis

    OpenAIRE

    2014-01-01

    The potential role of Wnt signaling factors in extraocular muscle (EOM) sparing in amyotrophic lateral sclerosis (ALS) was examined. Three of the Wnts were preferentially upregulated in EOM, suggesting that they may be involved in maintenance of neuromuscular junctions in the EOM of ALS patients.

  6. Estimating p-n Diode Bulk Parameters, Bandgap Energy and Absolute Zero by a Simple Experiment

    Science.gov (United States)

    Ocaya, R. O.; Dejene, F. B.

    2007-01-01

    This paper presents a straightforward but interesting experimental method for p-n diode characterization. The method differs substantially from many approaches in diode characterization by offering much tighter control over the temperature and current variables. The method allows the determination of important diode constants such as temperature…

  7. Pharmacological Studies of p, N-(3, 4-Methylenedioxy phenyl Benzoic Acid (RRL-1364 - Part-I

    Directory of Open Access Journals (Sweden)

    Dahanukar Sharadini

    1978-01-01

    Full Text Available Detailed pharmacological investigations of p-N-(3, 4-methylene dioxy phenyl benzoic acid revealed marked hypotensive action which was dose dependent and most marked in cats; it was absent in rats. Atropine could block this hypotensive action, thus suggest-ing cholinomimetic mechanism. Further studies indicated that the hypotension produced was central and possibly medullary in origin.

  8. Gap junctions - guards of excitability.

    Science.gov (United States)

    Stroemlund, Line Waring; Jensen, Christa Funch; Qvortrup, Klaus; Delmar, Mario; Nielsen, Morten Schak

    2015-06-01

    Cardiomyocytes are connected by mechanical and electrical junctions located at the intercalated discs (IDs). Although these structures have long been known, it is becoming increasingly clear that their components interact. This review describes the involvement of the ID in electrical disturbances of the heart and focuses on the role of the gap junctional protein connexin 43 (Cx43). Current evidence shows that Cx43 plays a crucial role in organizing microtubules at the intercalated disc and thereby regulating the trafficking of the cardiac sodium channel NaV1.5 to the membrane.

  9. Endoscopic treatment of spinal trauma at the thoracolumbar junction

    Directory of Open Access Journals (Sweden)

    Beisse Rudolf

    2007-01-01

    Full Text Available Attempts of treating unstable fractures of the thoracolumbar junction by posterior reduction and fixation alone often result in a significant loss of correction, especially in lesions where a severe destruction of the vertebral body and the intervertebral disc is present. The conventional open approaches like classic thoraco-phreno-lumbotomy produces additional iatrogenic trauma at the lateral chest and abdominal wall which not rarely lead to intercostal neuralgia, as well as post-thoracotomy syndromes. The endoscopic trans-diaphragmatic approach described below opens up the whole thoracolumbar junction to a minimally invasive procedure allowing one to perform all the procedures needed for a full reconstruction of the anterior column of the spine like corpectomy, decompression, vertebral body replacement and anterior plating. The key to address also the subdia-phragmal and retroperitoneal section of the thoracolumbar junction is a partial detachment of the diaphragm which runs along the attachment at the spine and the ribs. The technique was published first in 1998 and has been used now in 650 endoscopic procedures at the thoracolumbar junction out of a total of more than 1300 thoracoscopic operations of the spine in the BG Unfallklinik Murnau, Germany since 1996.

  10. Observation of Switchable Photoresponse of a Monolayer WSe 2 –MoS 2 Lateral Heterostructure via Photocurrent Spectral Atomic Force Microscopic Imaging

    KAUST Repository

    Son, Youngwoo

    2016-04-27

    In the pursuit of two-dimensional (2D) materials beyond graphene, enormous advances have been made in exploring the exciting and useful properties of transition metal dichalcogenides (TMDCs), such as a permanent band gap in the visible range and the transition from indirect to direct band gap due to 2D quantum confinement, and their potential for a wide range of device applications. In particular, recent success in the synthesis of seamless monolayer lateral heterostructures of different TMDCs via chemical vapor deposition methods has provided an effective solution to producing an in-plane p-n junction, which is a critical component in electronic and optoelectronic device applications. However, spatial variation of the electronic and optoelectonic properties of the synthesized heterojunction crystals throughout the homogeneous as well as the lateral junction region and the charge carrier transport behavior at their nanoscale junctions with metals remain unaddressed. In this work, we use photocurrent spectral atomic force microscopy to image the current and photocurrent generated between a biased PtIr tip and a monolayer WSe2-MoS2 lateral heterostructure. Current measurements in the dark in both forward and reverse bias reveal an opposite characteristic diode behavior for WSe2 and MoS2, owing to the formation of a Schottky barrier of dissimilar properties. Notably, by changing the polarity and magnitude of the tip voltage applied, pixels that show the photoresponse of the heterostructure are observed to be selectively switched on and off, allowing for the realization of a hyper-resolution array of the switchable photodiode pixels. This experimental approach has significant implications toward the development of novel optoelectronic technologies for regioselective photodetection and imaging at nanoscale resolutions. Comparative 2D Fourier analysis of physical height and current images shows high spatial frequency variations in substrate/MoS2 (or WSe2) contact that

  11. Control over Rectification in Supramolecular Tunneling Junctions

    NARCIS (Netherlands)

    Wimbush, K.S.; Wimbush, Kim S.; Reus, William F.; van der Wiel, Wilfred Gerard; Reinhoudt, David; Whitesides, George M.; Nijhuis, C.A.; Velders, Aldrik

    2010-01-01

    In complete control: The magnitude of current rectification in well-defined supramolecular tunneling junctions can be controlled by changing the terminal functionality (red spheres) of dendrimers (gray spheres) immobilized on a supramolecular platform (see picture). Junctions containing biferrocene

  12. Recombination-current suppression in GaAs p-n junctions grown on AlGaAs buffer layers by molecular-beam epitaxy

    Science.gov (United States)

    Rancour, D. P.; Melloch, M. R.; Pierret, R. F.; Lundstrom, M. S.; Klausmeier-Brown, M. E.; Kyono, C. S.

    1987-08-01

    n+pp+GaAs and n+pP+ GaAs/GaAs/Al0.3Ga0.7As mesa diodes have been fabricated from films grown by molecular-beam epitaxy. The diodes made from films employing an AlGaAs buffer layer show marked improvements (a factor of 5 reduction) in recombination current densities. Deep level transient spectroscopy measurements moreover indicate that deep level concentrations are reduced by the AlGaAs buffer.

  13. The effect of annealing temperature and the characteristics of p-n junction diodes based on sprayed polyaniline/ZnO thin films

    Institute of Scientific and Technical Information of China (English)

    R.Suresh; V.Ponnuswamy; J.Chandrasekaran; D.Manoharan; R.Mariappan

    2013-01-01

    Polyaniline,ZnO and polyaniline/ZnO nanocomposite thin films are coated on glass substrates using the spray pyrolysis technique.The samples are characterized by the XRD,SEM,EDAX,UV-Vis and I-V characteristics.The XRD analyses confirm that the spray-coated polyaniline and ZnO thin films have orthorhombic and hexagonal structures,respectively,and optical bandgap energy decreases from 3.81 to 3.41 eV with the addition of a Zn atom.SEM analysis of the polyaniline/ZnO nanocomposite thin films shows that there is an agglomeration of ZnO particles with uniform distribution in the polyaniline matrix,and the diode characteristics of the polyaniline/ZnO nanocomposite show weak rectification behavior.Parameters such as the ideality factor,reverse saturation current and barrier height are calculated from the I-V characteristics.

  14. Photochemical tuning of ultrathin TiO2/ p-Si p-n junction properties via UV-induced H doping

    Science.gov (United States)

    Lee, Sang Yeon; Kim, Jinseo; Ahn, Byungmin; Cho, In Sun; Yu, Hak Ki; Seo, Hyungtak

    2017-03-01

    We report a modified TiO2/ p-Si electronic structure that uses ultraviolet exposure for the incorporation of H. This structure was characterized using various photoelectron spectroscopic techniques. The ultraviolet (UV) exposure of the TiO2 surface allowed the Fermi energy level to be tuned by the insertion of H radicals, which induced changes in the heterojunction TiO2/ p-Si diode properties. The UV exposure of the TiO2 surface was performed in air. On UVexposure, a photochemical reaction involving the incorporation of UV-induced H radicals led to the creation of a surface Ti-O-OH group and caused interstitial H doping (Ti-H-O) in the bulk, which modified the electronic structures in different ways, depending on the location of the H. On the basis of the band alignment determined using a combined spectroscopic analysis, it is suggested that the UV-induced H incorporation into the TiO2 could be utilized for the systematic tuning of the heterojunction property for solar cells, photocatalytic applications, and capacitors.

  15. Preparation of p-n Junction Diode by B-Doped Diamond Film Grown on Si-Doped c-BN

    Institute of Scientific and Technical Information of China (English)

    王成新; 高春晓; 张铁臣; 刘洪武; 李迅; 韩永吴; 骆继峰; 申彩霞

    2002-01-01

    A heterojunction diode has been fabricated by boron-doped p-type diamond thin film grown epitaxially ona silicon-doped n-type cubic boron nitride bulk crystal using the conventional hot tilament chemical vapourdeposition method. The ohmic electrode of Ti (50nm)/Mo (l00nm)/Au (300nm) for the p-type diamond filmand the bulk crystal of the c-BN were deposited by the rf planar magnetron method. Then the device wasannealed at 410°C in air for i h in order to form ohmic metal alloy. The current-voltage characteristics of theheterojunction diode were measured and the result indicated that the rectification ratio reached 10a, and theturn-on voltage and the highest current were 7 V and 0.35 mA, respectively.

  16. Benzo[c]thiophene-C60 diadduct: an electron acceptor for p-n junction organic solar cells harvesting visible to near-IR light.

    Science.gov (United States)

    Zhen, Yonggang; Obata, Naoki; Matsuo, Yutaka; Nakamura, Eiichi

    2012-11-01

    We synthesized a new 56-π-electron fullerene derivative through a Diels-Alder cycloaddition of benzo[c]thiophene that featured a relatively low temperature, closer to stoichiometric use of the diene, and easy product purification. The 56-π-electron benzo[c]thiophene diadduct (BTCDA) has a LUMO energy level of 0.09 to 0.18 eV higher than that of 58-π-electron fullerenes, and therefore, the BTCDA-based organic photovoltaic device exhibited a higher open-circuit voltage and power-conversion efficiency (PCE). When used with a binary-donor system, including visible-light-harvesting tetrabenzoporphyrin (BP) and near-IR-harvesting titanyl phthalocyanine (TiOPc), the device had a PCE that was 1.5-3 times higher (2.8%) than that for devices with BP or TiOPc alone because the binary-donor device can utilize light between λ=350 and 950 nm.

  17. Preparation of Improved p-n Junction NiO/TiO2 Nanotubes for Solar-Energy-Driven Light Photocatalysis

    Directory of Open Access Journals (Sweden)

    Lan Ching Sim

    2013-01-01

    Full Text Available Self-organized TiO2 nanotubes (TNTs with average inner diameter of 109 nm, wall thickness of 15 nm, and tube length of 7–10 μm were loaded with nickel oxide (NiO nanoparticles via incipient wet impregnation method. The molar concentration of Ni(NO32·6H2O aqueous solution varied in a range of 0.5 M–2.5 M. The samples were characterized for crystalline phase, morphology, topography, chemical composition, Raman shift, and UV-Vis diffusion reflection properties. The finding shows that the loading of NiO did not influence the morphology, structure, and crystalline phase of TNTs but it exhibited significant effect on crystallite size and optical absorption properties. Further, the solar-energy-driven the photocatalytic activity of NiO/TNTs and pure TNTs was evaluated by degrading methylene blue (MB. The results confirm that photocatalytic efficiency of NiO/TNTs is higher than that of TNTs.

  18. Novel approach for characterizing the specific shunt resistance caused by the penetration of the front contact through the p-n junction in solar cell

    Institute of Scientific and Technical Information of China (English)

    Zhang Lucheng; Shen Hui

    2009-01-01

    on process was completely compatible with the industrial silicon fabrication sequence, which was of great convenience. The measurement results give informations on the solar cell structure, material ingredients, and process parameters.

  19. Nano-Molecular Junctions on STM Tips

    Institute of Scientific and Technical Information of China (English)

    Chun Huang∗; Jianshu Yang

    2011-01-01

    We present a technique for building metal-organic-metal junctions, which contain ten or fewer conjugated molecules between each of such junction, and the investigations of the I-V response of these junctions. The junctions are made by self assembling thiolated molecules onto gold coated tips for use in scanning tunneling microscopy. We show that this easy technique probes the qualitative properties of the molecules. Current-voltage characteristics of a Tour wire and a new molecular rectifier are presented.

  20. Nano-Molecular Junctions on STM Tips

    Institute of Scientific and Technical Information of China (English)

    Chun Huang; Jianshu Yang

    2011-01-01

    We present a technique for building metal-organic-metal junctions, which contain ten or fewer conjugated molecules between each of such junction, and the investigations of the I-V response of these junctions.The junctions are made by self assembling thiolated molecules onto gold coated tips for use in scanning tunneling microscopy. We show that this easy technique probes the qualitative properties of the molecules. Currentvoltage characteristics of a Tour wire and a new molecular rectifier are presented.

  1. Current noise in tunnel junctions

    Energy Technology Data Exchange (ETDEWEB)

    Frey, Moritz; Grabert, Hermann [Physikalisches Institut, Universitaet Freiburg, Hermann-Herder-Strasse 3, 79104, Freiburg (Germany)

    2017-06-15

    We study current fluctuations in tunnel junctions driven by a voltage source. The voltage is applied to the tunneling element via an impedance providing an electromagnetic environment of the junction. We use circuit theory to relate the fluctuations of the current flowing in the leads of the junction with the voltage fluctuations generated by the environmental impedance and the fluctuations of the tunneling current. The spectrum of current fluctuations is found to consist of three parts: a term arising from the environmental Johnson-Nyquist noise, a term due to the shot noise of the tunneling current and a third term describing the cross-correlation between these two noise sources. Our phenomenological theory reproduces previous results based on the Hamiltonian model for the dynamical Coulomb blockade and provides a simple understanding of the current fluctuation spectrum in terms of circuit theory and properties of the average current. Specific results are given for a tunnel junction driven through a resonator. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  2. Josephson tunnel junction microwave attenuator

    DEFF Research Database (Denmark)

    Koshelets, V. P.; Shitov, S. V.; Shchukin, A. V.

    1993-01-01

    A new element for superconducting electronic circuitry-a variable attenuator-has been proposed, designed, and successfully tested. The principle of operation is based on the change in the microwave impedance of a superconductor-insulator-superconductor (SIS) Josephson tunnel junction when dc bias...

  3. Mechanical properties of DNA origami nanoassemblies are determined by Holliday junction mechanophores.

    Science.gov (United States)

    Shrestha, Prakash; Emura, Tomoko; Koirala, Deepak; Cui, Yunxi; Hidaka, Kumi; Maximuck, William J; Endo, Masayuki; Sugiyama, Hiroshi; Mao, Hanbin

    2016-08-19

    DNA nanoassemblies have demonstrated wide applications in various fields including nanomaterials, drug delivery and biosensing. In DNA origami, single-stranded DNA template is shaped into desired nanostructure by DNA staples that form Holliday junctions with the template. Limited by current methodologies, however, mechanical properties of DNA origami structures have not been adequately characterized, which hinders further applications of these materials. Using laser tweezers, here, we have described two mechanical properties of DNA nanoassemblies represented by DNA nanotubes, DNA nanopyramids and DNA nanotiles. First, mechanical stability of DNA origami structures is determined by the effective density of Holliday junctions along a particular stress direction. Second, mechanical isomerization observed between two conformations of DNA nanotubes at 10-35 pN has been ascribed to the collective actions of individual Holliday junctions, which are only possible in DNA origami with rotational symmetric arrangements of Holliday junctions, such as those in DNA nanotubes. Our results indicate that Holliday junctions control mechanical behaviors of DNA nanoassemblies. Therefore, they can be considered as 'mechanophores' that sustain mechanical properties of origami nanoassemblies. The mechanical properties observed here provide insights for designing better DNA nanostructures. In addition, the unprecedented mechanical isomerization process brings new strategies for the development of nano-sensors and actuators.

  4. Modeling pN2 through Geological Time: Implications for Planetary Climates and Atmospheric Biosignatures

    Science.gov (United States)

    Stüeken, E. E.; Kipp, M. A.; Koehler, M. C.; Schwieterman, E. W.; Johnson, B.; Buick, R.

    2016-12-01

    Nitrogen is a major nutrient for all life on Earth and could plausibly play a similar role in extraterrestrial biospheres. The major reservoir of nitrogen at Earth's surface is atmospheric N2, but recent studies have proposed that the size of this reservoir may have fluctuated significantly over the course of Earth's history with particularly low levels in the Neoarchean - presumably as a result of biological activity. We used a biogeochemical box model to test which conditions are necessary to cause large swings in atmospheric N2 pressure. Parameters for our model are constrained by observations of modern Earth and reconstructions of biomass burial and oxidative weathering in deep time. A 1-D climate model was used to model potential effects on atmospheric climate. In a second set of tests, we perturbed our box model to investigate which parameters have the greatest impact on the evolution of atmospheric pN2 and consider possible implications for nitrogen cycling on other planets. Our results suggest that (a) a high rate of biomass burial would have been needed in the Archean to draw down atmospheric pN2 to less than half modern levels, (b) the resulting effect on temperature could probably have been compensated by increasing solar luminosity and a mild increase in pCO2, and (c) atmospheric oxygenation could have initiated a stepwise pN2 rebound through oxidative weathering. In general, life appears to be necessary for significant atmospheric pN2 swings on Earth-like planets. Our results further support the idea that an exoplanetary atmosphere rich in both N2 and O2 is a signature of an oxygen-producing biosphere.

  5. Simplified P$_N$ Equations for Nonclassical Transport with Isotropic Scattering

    CERN Document Server

    Vasques, R

    2016-01-01

    A nonclassical diffusion approximation has been previously derived for the the one-speed nonclassical transport equation with isotropic scattering. In this paper we use an asymptotic analysis to derive more accurate diffusion approximations to the nonclassical transport equation. If the free-path distribution is given by an exponential (classical transport), these approximations reduce to the simplified P$_N$ (SP$_N$) equations; therefore, they are labeled nonclassical SP$_N$ equations.

  6. LiNbO3/p+n diode surface acoustic wave memory correlator

    Institute of Scientific and Technical Information of China (English)

    张朝; 水永安; 印建华

    1997-01-01

    A detailed theoretical analysis of strip-coupled LiNbO3/p+ n diode surface acoustic wave (SAW) memory correlator in the parametric mode is presented. The influence of some important factors on correlation output is analyzed and calculated, including the amplitudes of reference, read and write signal, duration of write signal and doping density of the diode array. The conclusions can be employed for the design of improved strip-coupled SAW memorycorrelators.

  7. The 2H(e, e' p)n reaction at large energy transfers

    NARCIS (Netherlands)

    Willering, Hendrik Willem

    2003-01-01

    At the ELSA accelerator facillity in Bonn, Germany, we have measured the deutron "breakup" reaction 2H(e,e' p)n at four-momentum transfers around Q2 = -0 .20(GeV/c)2 with an electron beam energy of E0 = 1.6 GeV. The cross section has been determined for energy transfers extending from the quasielast

  8. Modeling pN2 through Geological Time: Implications for Planetary Climates and Atmospheric Biosignatures.

    Science.gov (United States)

    Stüeken, E E; Kipp, M A; Koehler, M C; Schwieterman, E W; Johnson, B; Buick, R

    2016-12-01

    Nitrogen is a major nutrient for all life on Earth and could plausibly play a similar role in extraterrestrial biospheres. The major reservoir of nitrogen at Earth's surface is atmospheric N2, but recent studies have proposed that the size of this reservoir may have fluctuated significantly over the course of Earth's history with particularly low levels in the Neoarchean-presumably as a result of biological activity. We used a biogeochemical box model to test which conditions are necessary to cause large swings in atmospheric N2 pressure. Parameters for our model are constrained by observations of modern Earth and reconstructions of biomass burial and oxidative weathering in deep time. A 1-D climate model was used to model potential effects on atmospheric climate. In a second set of tests, we perturbed our box model to investigate which parameters have the greatest impact on the evolution of atmospheric pN2 and consider possible implications for nitrogen cycling on other planets. Our results suggest that (a) a high rate of biomass burial would have been needed in the Archean to draw down atmospheric pN2 to less than half modern levels, (b) the resulting effect on temperature could probably have been compensated by increasing solar luminosity and a mild increase in pCO2, and (c) atmospheric oxygenation could have initiated a stepwise pN2 rebound through oxidative weathering. In general, life appears to be necessary for significant atmospheric pN2 swings on Earth-like planets. Our results further support the idea that an exoplanetary atmosphere rich in both N2 and O2 is a signature of an oxygen-producing biosphere. Key Words: Biosignatures-Early Earth-Planetary atmospheres. Astrobiology 16, 949-963.

  9. Stability of large-area molecular junctions

    NARCIS (Netherlands)

    Akkerman, Hylke B.; Kronemeijer, Auke J.; Harkema, Jan; van Hal, Paul A.; Smits, Edsger C. P.; de Leeuw, Dago M.; Blom, Paul W. M.

    The stability of molecular junctions is crucial for any application of molecular electronics. Degradation of molecular junctions when exposed to ambient conditions is regularly observed. In this report the stability of large-area molecular junctions under ambient conditions for more than two years

  10. Soliton bunching in annular Josephson junctions

    DEFF Research Database (Denmark)

    Vernik, I.V; Lazarides, Nickos; Sørensen, Mads Peter

    1996-01-01

    By studying soliton (fluxon) motion in long annular Josephson junctions it is possible to avoid the influence of the boundaries and soliton-soliton collisions present in linear junctions. A new experimental design consisting of a niobium coil placed on top of an annular junction has been used...

  11. Long Range Magnetic Interaction between Josephson Junctions

    DEFF Research Database (Denmark)

    Grønbech-Jensen, Niels; Samuelsen, Mogens Rugholm

    1995-01-01

    A new model for magnetic coupling between long Josephson junctions is proposed. The coupling mechanism is a result of the magnetic fields outside the junctions and is consequently effective over long distances between junctions. We give specific expressions for the form and magnitude of the inter...

  12. Dynamics of pi-junction interferometer circuits

    DEFF Research Database (Denmark)

    Kornkev, V.K.; Mozhaev, P.B.; Borisenko, I.V.;

    2002-01-01

    The pi-junction superconducting circuit dynamics was studied by means of numerical simulation technique. Parallel arrays consisting of Josephson junctions of both 0- and pi-type were studied as a model of high-T-c grain-boundary Josephson junction. The array dynamics and the critical current...

  13. Dynamics of pi-junction interferometer circuits

    DEFF Research Database (Denmark)

    Kornkev, V.K.; Mozhaev, P.B.; Borisenko, I.V.

    2002-01-01

    The pi-junction superconducting circuit dynamics was studied by means of numerical simulation technique. Parallel arrays consisting of Josephson junctions of both 0- and pi-type were studied as a model of high-T-c grain-boundary Josephson junction. The array dynamics and the critical current...

  14. Band alignment of two-dimensional lateral heterostructures

    Science.gov (United States)

    Zhang, Junfeng; Xie, Weiyu; Zhao, Jijun; Zhang, Shengbai

    2017-03-01

    Recent experimental synthesis of two-dimensional (2D) heterostructures opens a door to new opportunities in tailoring the electronic properties for novel 2D devices. Here, we show that a wide range of lateral 2D heterostructures could have a prominent advantage over the traditional three-dimensional (3D) heterostructures, because their band alignments are insensitive to the interfacial conditions. They should be at the Schottky-Mott limits for semiconductor-metal junctions and at the Anderson limits for semiconductor junctions, respectively. This fundamental difference from the 3D heterostructures is rooted in the fact that, in the asymptotic limit of large distance, the effect of the interfacial dipole vanishes for 2D systems. Due to the slow decay of the dipole field and the dependence on the vacuum thickness, however, studies based on first-principles calculations often failed to reach such a conclusion. Taking graphene/hexagonal-BN and MoS2/WS2 lateral heterostructures as the respective prototypes, we show that the converged junction width can be order of magnitude longer than that for 3D junctions. The present results provide vital guidance to high-quality transport devices wherever a lateral 2D heterostructure is involved.

  15. Tennis Elbow (Lateral Epicondylitis)

    Science.gov (United States)

    .org Tennis Elbow (Lateral Epicondylitis) Page ( 1 ) Tennis elbow, or lateral epicondyliti s, is a painful condition of the elbow caused by overuse. Not surprisingly, playing tennis or other racquet sports can cause ...

  16. Hydrogen passivation of n+p and p+n heteroepitaxial InP solar cell structures

    Science.gov (United States)

    Chatterjee, B.; Ringel, S. A.; Hoffman, R., Jr.

    1995-01-01

    High-efficiency, heteroepitaxial (HE) InP solar cells, grown on GaAs, Si or Ge substrates, are desirable for their mechanically strong, light-weight and radiation-hard properties. However, dislocations, caused by lattice mismatch, currently limit the performance of the HE cells. This occurs through shunting paths across the active photovoltaic junction and by the formation of deep levels. In previous work we have demonstrated that plasma hydrogenation is an effective and stable means to passivate the electrical activity of dislocations in specially designed HE InP test structures. In this work, we present the first report of successful hydrogen passivation in actual InP cell structures grown on GaAs substrates by metalorganic chemical vapor deposition (MOCVD). We have found that a 2 hour exposure to a 13.56 MHz hydrogen plasma at 275 C reduces the deep level concentration in HE n+n InP cell structures from as-grown values of approximately 10(exp 15)/cm(exp -3), down to 1-2 x 10(exp 13)/cm(exp -3). The deep levels in the p-type base region of the cell structure match those of our earlier p-type test structures, which were attributed to dislocations or related point defect complexes. All dopants were successfully reactivated by a 400 C, 5 minute anneal with no detectable activation of deep levels. I-V analysis indicated a subsequent approximately 10 fold decrease in reverse leakage current at -1 volt reverse bias, and no change in the forward biased series resistance of the cell structure which indicates complete reactivation of the n+ emitter. Furthermore, electrochemical C-V profiling indicates greatly enhanced passivation depth, and hence hydrogen diffusion, for heteroepitaxial structures when compared with identically processed homoepitaxial n+p InP structures. An analysis of hydrogen diffusion in dislocated InP will be discussed, along with comparisons of passivation effectiveness for n+p versus p+n heteroepitaxial cell configurations. Preliminary hydrogen

  17. The function of tight junctions in maintaining differences in lipid composition between the apical and the basolateral cell surface domains of MDCK cells

    NARCIS (Netherlands)

    van Meer, G.|info:eu-repo/dai/nl/068570368; Simons, K.

    1986-01-01

    Tight junctions in epithelial cells have been postulated to act as barriers inhibiting lateral diffusion of lipids and proteins between the apical and basolateral plasma membrane domains. To study the fence function of the tight junction in more detail, we have fused liposomes containing the

  18. Octagonal Defects at Carbon Nanotube Junctions

    Directory of Open Access Journals (Sweden)

    W. Jaskólski

    2013-01-01

    Full Text Available We investigate knee-shaped junctions of semiconductor zigzag carbon nanotubes. Two dissimilar octagons appear at such junctions; one of them can reconstruct into a pair of pentagons. The junction with two octagons presents two degenerate localized states at Fermi energy (EF. The reconstructed junction has only one state near EF, indicating that these localized states are related to the octagonal defects. The inclusion of Coulomb interaction splits the localized states in the junction with two octagons, yielding an antiferromagnetic system.

  19. Fabrication of high quality ferromagnetic Josephson junctions

    Energy Technology Data Exchange (ETDEWEB)

    Weides, M. [Institute for Solid State Research, Research Centre Juelich, D-52425 Juelich (Germany) and CNI-Center of Nanoelectronic Systems for Information Technology, Research Centre Juelich, D-52425 Juelich (Germany)]. E-mail: m.weides@fz-juelich.de; Tillmann, K. [Institute for Solid State Research, Research Centre Juelich, D-52425 Juelich (Germany); Ernst Ruska-Centre for Microscopy and Spectroscopy with Electrons, Research Centre Juelich, D-52425 Juelich (Germany); Kohlstedt, H. [Institute for Solid State Research, Research Centre Juelich, D-52425 Juelich (Germany); CNI-Center of Nanoelectronic Systems for Information Technology, Research Centre Juelich, D-52425 Juelich (Germany); Department of Material Science and Engineering and Department of Physics, University of Berkeley, CA 94720 (United States)

    2006-05-15

    We present ferromagnetic Nb/Al{sub 2}O{sub 3}/Ni{sub 60}Cu{sub 40}/Nb Josephson junctions (SIFS) with an ultrathin Al{sub 2}O{sub 3} tunnel barrier. The junction fabrication was optimized regarding junction insulation and homogeneity of current transport. Using ion-beam-etching and anodic oxidation we defined and insulated the junction mesas. The additional 2 nm thin Cu-layer below the ferromagnetic NiCu (SINFS) lowered interface roughness and ensured very homogeneous current transport. A high yield of junctional devices with j {sub c} spreads less than 2% was obtained.

  20. Analysis of the turn-on process in 6 kV 4H-SiC junction diodes

    Science.gov (United States)

    Mnatsakanov, T. T.; Levinshtein, M. E.; Ivanov, P. A.; Palmour, J. W.; Das, M.; Agarwal, A. K.

    2005-01-01

    The switch-on process in 6 kV 4H-SiC junction diodes has been investigated experimentally and theoretically. The results of a detailed computer simulation are compared with the data furnished by the analytical theory. It is demonstrated that, at high current densities exceeding the critical value jcr = eNDvs (e is the elementary charge, ND is the base doping level, and vs is the carrier saturation velocity) and rather short current rise time (1 ns), an extremely fast base modulation can be achieved. In this mode, the base is spanned by an electron front that moves from the n+-n to the p+-n emitter with a velocity vs and by a relatively slow quasi-neutral hole front moving in the opposite direction, from the p+-n to the n+-n junction.

  1. Selective permeability of gap junction channels.

    Science.gov (United States)

    Goldberg, Gary S; Valiunas, Virginijus; Brink, Peter R

    2004-03-23

    Gap junctions mediate the transfer of small cytoplasmic molecules between adjacent cells. A family of gap junction proteins exist that form channels with unique properties, and differ in their ability to mediate the transfer of specific molecules. Mutations in a number of individual gap junction proteins, called connexins, cause specific human diseases. Therefore, it is important to understand how gap junctions selectively move molecules between cells. Rules that dictate the ability of a molecule to travel through gap junction channels are complex. In addition to molecular weight and size, the ability of a solute to transverse these channels depends on its net charge, shape, and interactions with specific connexins that constitute gap junctions in particular cells. This review presents some data and interpretations pertaining to mechanisms that govern the differential transfer of signals through gap junction channels.

  2. Quaternary Evolution of Karliova Triple Junction

    Science.gov (United States)

    Sançar, Taylan; Zabcı, Cengiz; Akyüz, H. Serdar

    2013-04-01

    The arguments to explain Quaternary evolution of Karlıova Triple Junction (KTJ) depends upon two different analogue models. The compressional type of Prandtl Cell Model (PCM) and 60 km wide shear zone with concomitant counter clockwise block rotation used to modelled for west and east of the KTJ respectively. The data for the model of west of the KTJ acquired by extensive field studies, and quantified geomorphic features. Compressional PCM put forward that behavior of slip lines controlled by boundary faults. But the model is not enough to explain slip distribution, age relation of them. At west of the KTJ boundary faults presented by eastern most segments of the North Anatolian Fault Zone (NAFZ) and the East Anatolian Fault Zone (EAFZ). Slip lines, however, presented by Bahçeli and Toklular faults. Both field studies and morphometric analyses undisputedly set forth that there are two different fault types between the NAFZ and EAFZ. The most strain loaded fault type, which are positioned near the NAFZ, start as a strike-slip fault and when it turn to SE its sense of motion change to oblique normal due to changing orientation of principal stress axes. The new orientation of stress axes exposed in the field as a special kind of caprock -cuesta-. The younger slip lines formed very close to junction point and accommodate less slip. Even though slip trajectories started from the boundary faults in compressional PCM, at the west of KTJ, right lateral trajectories more clearly formed close the NAFZ and left lateral trajectories, relatively less strain loaded fault type, are poorly formed close the EAFZ . We think that, this differences between KTJ and compressional PCM result from the distinction of velocity of boundary faults. East of the KTJ governed by completely different mechanism. The region controlled two main fault systems. The Varto Fault Zone (VFZ), the eastern branch of the KTJ, and Murat Fault (MF) delimited the region from north and south respectively. The

  3. Simulation of Hetero-junction (GaInP/GaAs Solar Cell Using AMPS-1D

    Directory of Open Access Journals (Sweden)

    Dennai Benmoussa

    2016-03-01

    Full Text Available Photovoltaic conversion is the direct conversion of electromagnetic energy into electrical energy continuously. This electromagnetic energy is the most solar radiation. In this work we performed a computer modelling using AMPS 1D optimization of hetero-junction solar cells GaInP / GaAs configuration for p/n. We studied the influence of the thickness the base layer in the cell offers on the open circuit voltage, the short circuit current and efficiency.

  4. Seebeck effect in molecular junctions

    Science.gov (United States)

    Zimbovskaya, Natalya A.

    2016-05-01

    Advances in the fabrication and characterization of nanoscale systems presently allow for a better understanding of their thermoelectric properties. As is known, the building blocks of thermoelectricity are the Peltier and Seebeck effects. In the present work we review results of theoretical studies of the Seebeck effect in single-molecule junctions and similar systems. The behavior of thermovoltage and thermopower in these systems is controlled by several factors including the geometry of molecular bridges, the characteristics of contacts between the bridge and the electrodes, the strength of the Coulomb interactions between electrons on the bridge, and of electron-phonon interactions. We describe the impact of these factors on the thermopower. Also, we discuss a nonlinear Seebeck effect in molecular junctions.

  5. Electron transport in molecular junctions

    DEFF Research Database (Denmark)

    Jin, Chengjun

    This thesis addresses the electron transport in molecular junctions, focusing on the energy level alignment and correlation effects. Various levels of theory have been applied to study the structural and electronic effects in different molecular junctions, starting from the single particle density...... charge position are in quantitative agreement with the experiments, while pure DFT is not. This is the consequence of the accurate energy level alignment, where the DFT+∑ method corrects the self-interaction error in the standard DFT functional and uses a static image charge model to include the image...... charge effect on the energy level renormalization. Additionally, the gating of the 4,4’-bipyridine (44BP) molecule contacted to either Ni or Au electrodes has been investigated. Here it is found that the gating mechanism is conceptually different between two cases. In the case of Ni contacts where...

  6. How coherent are Josephson junctions?

    CERN Document Server

    Paik, Hanhee; Bishop, Lev S; Kirchmair, G; Catelani, G; Sears, A P; Johnson, B R; Reagor, M J; Frunzio, L; Glazman, L; Schoelkopf, R J

    2011-01-01

    Attaining sufficient coherence is a requirement for realizing a large-scale quantum computer. We present a new implementation of a superconducting transmon qubit that is strongly coupled to a three-dimensional superconducting cavity. We observe a reproducible increase in the coherence times of qubit (both $T_1$ and $T_2$ > 10 microseconds) and cavity ($T_{cav}$ ~ 50 microseconds) by more than an order of magnitude compared to the current state-of-art superconducting qubits. This enables the study of the stability and quality of Josephson junctions at precisions exceeding one part per million. Surprisingly, we see no evidence for $1/f$ critical current noise. At elevated temperatures, we observe the dissipation due to a small density (< 1 - 10 ppm) of thermally-excited quasiparticles. The results suggest that the overall quality of Josephson junctions will allow error rates of a few $10^{-4}$, approaching the error correction threshold.

  7. Morphogenesis of rat myotendinous junction.

    Science.gov (United States)

    Curzi, Davide; Ambrogini, Patrizia; Falcieri, Elisabetta; Burattini, Sabrina

    2013-10-01

    Myotendinous junction (MTJ) is the highly specialized complex which connects the skeletal muscle to the tendon for transmitting the contractile force between the two tissues. The purpose of this study was to investigate the MTJ development and rat EDL was chosen as a model. 1, 15, 30 day animals were considered and the junctions were analyzed by light and electron microscopy. The MTJ interface architecture increased during the development, extending the interaction between muscle and tendon. 1-day-old rats showed disorganized myofibril bundles, spread cytosol and incomplete rough endoplasmic reticulum, features partially improved in 15-day-old rats, and completely developed in 30-day-old animals. These findings indicate that muscle-tendon interface displays, during rat lifetime, numerically increased and longer tendon interdigitations, correlated with an improved organization of both tissues and with a progressive acquirement of full functionality.

  8. A discrete element model of laser beam induced current (LBIC) due to the lateral photovoltaic effect in open-circuit HgCdTe photodiodes

    Energy Technology Data Exchange (ETDEWEB)

    Fynn, K.A.; Faraone, L. [Univ. of Western Australia, Nedlands (Australia). Dept. of Electrical and Electronic Engineering; Bajaj, J. [Rockwell International Science Center, Thousand Oaks, CA (United States)

    1995-10-01

    The non-destructive optical characterization technique of Laser-Beam-Induced-Current (LBIC) imaging has proven useful in qualitatively assessing electrically active defects and localized non-uniformities in HgCdTe materials and devices used for infrared photovoltaic arrays. To further the development of a quantitative working model for LBIC, this paper focuses on the application of the technique to photovoltaic structures that are represented by a discrete element equivalent circuit. For this particular case the LBIC signal arises due to the lateral photovoltaic effect in non-uniformly illuminated open-circuit photodiodes. The outcomes of the model predict all of the experimentally observed geometrical features of the LBIC image and signal. Furthermore, the model indicates that the LBIC signal has an extremely weak dependence on the p-n junction reverse saturation current, and shows a linear dependence with laser power. This latter feature may be useful for non-contact measurement of the quantum efficiency of individual photodiodes within a large two-dimensional focal plane array. The decay of the LBIC signal outside the physical boundary of the p-n junction is of the same form as the roll-off in the short circuit photoresponse and, therefore, can be used to extract the diffusion length of minority carriers. Experimental data are obtained from an arsenic implanted p-on-n junction fabricated on MBE grown Hg{sub 1{minus}x}Cd{sub x}Te material with an x-value of 0.3. The p-on-n diode is shown to be uniform and of high quality with an R{sub o}A product of 1 {times} 10{sup 8} {Omega}{center_dot}cm{sup 2} at 77 K. The validity of the simple model developed in this paper, is confirmed by the excellent agreement with experimental results. Consequently, the LBIC technique is shown to be an appropriate diagnostic tool for non-contact quantitative analysis of semiconductor materials and devices.

  9. Thermoelectric efficiency of molecular junctions

    Science.gov (United States)

    Perroni, C. A.; Ninno, D.; Cataudella, V.

    2016-09-01

    Focus of the review is on experimental set-ups and theoretical proposals aimed to enhance thermoelectric performances of molecular junctions. In addition to charge conductance, the thermoelectric parameter commonly measured in these systems is the thermopower, which is typically rather low. We review recent experimental outcomes relative to several junction configurations used to optimize the thermopower. On the other hand, theoretical calculations provide estimations of all the thermoelectric parameters in the linear and non-linear regime, in particular of the thermoelectric figure of merit and efficiency, completing our knowledge of molecular thermoelectricity. For this reason, the review will mainly focus on theoretical studies analyzing the role of not only electronic, but also of the vibrational degrees of freedom. Theoretical results about thermoelectric phenomena in the coherent regime are reviewed focusing on interference effects which play a significant role in enhancing the figure of merit. Moreover, we review theoretical studies including the effects of molecular many-body interactions, such as electron-vibration couplings, which typically tend to reduce the efficiency. Since a fine tuning of many parameters and coupling strengths is required to optimize the thermoelectric conversion in molecular junctions, new theoretically proposed set-ups are discussed in the conclusions.

  10. Incompressible Turbulent Wing-Body Junction Flow

    Science.gov (United States)

    Krishnamurthy, R.; Cagle, Corey D.; Chandra, S.

    1998-01-01

    measurements in juncture flows around the nose of a wing-body junction. Measured values of mean-velocity and/or turbulence kinetic energy was used to predict the magnitude of the shear stress vector. Algebraic stress models performed the best followed by Cebeci-Smith eddy viscosity model. The flow is reported to be dominated by a pressure field produced by the wing and the velocity field generated by the horseshoe vortex that is wrapped around the junction between the wing and wall. Kubendran et al. conclude from an experimental study that the shape of leading edge of the wing as characterized by its slenderness ratio is a major factor in determining the flow fields in the juncture region. The more thinner the leading edge of the juncture, the weaker the horseshoe vortex is. Also, with a slender leading edge, the secondary flow in the juncture would be due mainly to the cross-stream gradients of Reynolds stresses rather than due to a lateral skewing of the shear layer.

  11. New methods for determining speciality of linear systems based at fat points in P^n

    CERN Document Server

    Paul, Stepan

    2012-01-01

    In this paper we develop techniques for determining the dimension of linear systems of divisors based at a collection of general fat points in P^n by partitioning the monomial basis for the vector space of global sections of O(d). The methods we develop can be viewed as extensions of those developed by Dumnicki. We apply these techniques to produce new lower bounds on multi-point Seshadri constants of P^2 and to provide a new proof of a known result confirming the perfect-power cases of Iarrobino's analogue to Nagata's Conjecture in higher dimension.

  12. Synthesis of P,N-2,2’-biphenyl derivatives with central chirality

    Institute of Scientific and Technical Information of China (English)

    JEAN; Ludovic; POULIQUEN; Michael; BLANCHET; Jér?me; LASNE; Marie-Claire; ROUDEN; Jacques

    2010-01-01

    Enantiopure 2-(dicyclohexylphosphino)-1,1’-biphenyl derivatives substituted in the 2’-position by a chiral amino group were prepared.For the compound bearing an acyclic chiral chain,the key step was a Suzuki coupling between bromobenzeneboronic acid and N-Boc-iodoaniline whereas an aromatic nucleophilic substitution allowed the introduction of a chiral pyrrolidine in the 2’-position of the biphenyl backbone.The efficiency of the P,N-biphenyl pyrrolidine derivatives as ligands in Pd-catalyzed arylaminations compares well with that of DavePhos ligand.

  13. Photocurrent Effect in Reverse-Biased p-n Silicon Waveguides in Communication Bands

    Institute of Scientific and Technical Information of China (English)

    ZHAO Yong; XU Chao; WANG Wan-Jun; ZHOU Qiang; HAO Yin-Lei; YANG Jian-Yi; WANG Ming-Hua; JIANG Xiao-Qing

    2011-01-01

    The photocurrent effect in reverse biased p-n silicon waveguides at wavelength 1550nm is experimentally investigated.The photocurrent,which is mainly related to surface-state absorption,defect-state absorption and/or two-photon absorption,is more than 0.08 μA/mm under 8 V reverse biasing and 0.75 mW irradiation.The responsivity of a silicon waveguide with length of 4500 μm achieves 0.S mA/W.Moreover,the enhancement of the photocurrent effect under the electric field is discussed.

  14. Study of n-n correlations in d + 2H --> p + p + n + n reaction

    CERN Document Server

    Konobeevsky, E; Mordovskoy, M; Zuyev, S; Lebedev, V; Spassky, A

    2016-01-01

    A kinematically complete measurement of the four-body breakup reaction d+2H-->2ps+2ns --> p +p +n +n has been performed at 15 MeV deuteron beam of the SINP MSU. The two protons and neutron were detected at angles close to those of emission of 2ps and 2ns systems. The energy of singlet dineutron state was determined by comparing experimental TOF spectrum of breakup neutrons with simulated spectra depending on this energy. A low value Enn = 0.076 +/- 0.006 keV obtained by fitting procedure apparently indicates an effective enhancement of nn-interaction in the intermediate state of studied reaction.

  15. Laser Annealing of Self-Aligned As+ Implants in Contact Windows for Ultrashallow Junction Formation

    NARCIS (Netherlands)

    Biasotto, C.; Gonda, V.; Nanver, L.K.; Van der Cingel, J.; Jovanovic, V.

    2009-01-01

    In the past it has been shown that ultrashallow junctions with minimum lateral dimensions can be made by implanting self-aligned to the contact window and using one-shot excimer laser annealing (ELA) to activate the dopants. Besides the recrystallization of the implanted Si, the final structuring at

  16. Behavior of Photocarriers in the Light-Induced Metastable State in the p-n Heterojunction of a Cu(In,Ga)Se2 Solar Cell with CBD-ZnS Buffer Layer.

    Science.gov (United States)

    Lee, Woo-Jung; Yu, Hye-Jung; Wi, Jae-Hyung; Cho, Dae-Hyung; Han, Won Seok; Yoo, Jisu; Yi, Yeonjin; Song, Jung-Hoon; Chung, Yong-Duck

    2016-08-31

    We fabricated Cu(In,Ga)Se2 (CIGS) solar cells with a chemical bath deposition (CBD)-ZnS buffer layer grown with varying ammonia concentrations in aqueous solution. The solar cell performance was degraded with increasing ammonia concentration, due to actively dissolved Zn atoms during CBD-ZnS precipitation. These formed interfacial defect states, such as hydroxide species in the CBD-ZnS film, and interstitial and antisite Zn defects at the p-n heterojunction. After light/UV soaking, the CIGS solar cell performance drastically improved, with a rise in fill factor. With the Zn-based buffer layer, the light soaking treatment containing blue photons induced a metastable state and enhanced the CIGS solar cell performance. To interpret this effect, we suggest a band structure model of the p-n heterojunction to explain the flow of photocarriers under white light at the initial state, and then after light/UV soaking. The determining factor is a p+ defect layer, containing an amount of deep acceptor traps, located near the CIGS surface. The p+ defect layer easily captures photoexcited electrons, and then when it becomes quasi-neutral, attracts photoexcited holes. This alters the barrier height and controls the photocurrent at the p-n junction, and fill factor values, determining the solar cell performance.

  17. Chaos induced by coupling between Josephson junctions

    Science.gov (United States)

    Shukrinov, Yu. M.; Azemtsa-Donfack, H.; Botha, A. E.

    2015-02-01

    It is found that, in a stack of intrinsic Josephson junctions in layered high temperature superconductors under external electromagnetic radiation, the chaotic features are triggered by interjunction coupling, i.e., the coupling between different junctions in the stack. While the radiation is well known to produce chaotic effects in the single junction, the effect of interjunction coupling is fundamentally different and it can lead to the onset of chaos via a different route to that of the single junction. A precise numerical study of the phase dynamics of intrinsic Josephson junctions, as described by the CCJJ+DC model, is performed. We demonstrate the charging of superconducting layers, in a bias current interval corresponding to a Shapiro step subharmonic, due to the creation of a longitudinal plasma wave along the stack of junctions. With increase in radiation amplitude chaotic behavior sets in. The chaotic features of the coupled Josephson junctions are analyzed by calculations of the Lyapunov exponents. We compare results for a stack of junctions to the case of a single junction and prove that the observed chaos is induced by the coupling between the junctions. The use of Shapiro step subharmonics may allow longitudinal plasma waves to be excited at low radiation power.

  18. One-dimensional breakdown voltage model of SOI RESURF lateral power device based on lateral linearly graded approximation

    Institute of Scientific and Technical Information of China (English)

    张珺; 郭宇锋; 徐跃; 林宏; 杨慧; 洪洋; 姚佳飞

    2015-01-01

    A novel one-dimensional (1D) analytical model is proposed for quantifying the breakdown voltage of reduced surface field (RESURF) lateral power device fabricated on silicon on an insulator (SOI) substrate. We assume that the charges in the depletion region contribute to the lateral PN junctions along the diagonal of the area shared by the lateral and vertical depletion regions. Based on the assumption, the lateral PN junction behaves as a linearly graded junction, thus resulting in a reduced surface electric field and high breakdown voltage. Using the proposed model, the breakdown voltage as a function of device parameters is investigated and compared with the numerical simulation by the TCAD tools. The analytical results are shown to be in fair agreement with the numerical results. Finally, a new RESURF criterion is derived which offers a useful scheme to optimize the structure parameters. This simple 1D model provides a clear physical insight into the RESURF effect and a new explanation on the improvement in breakdown voltage in an SOI RESURF device.

  19. Effective charges, the valence p-n interaction, and the IBM

    Energy Technology Data Exchange (ETDEWEB)

    Casten, R.F. (Brookhaven National Lab., Upton, NY (United States)); Wolf, A. (Brookhaven National Lab., Upton, NY (United States) Israel Atomic Energy Commission, Beersheba (Israel). Nuclear Research Center-Negev)

    1992-01-01

    There are three recent themes in nuclear structure that come together in an interesting and useful way via the concept of effective charges and the framework of the IBM. These three concepts are the importance of dynamical symmetries in describing nuclear structure and the benefits that accrue from their exploitation, secondly, the critical role of the p-n interaction in the onset and development of collectivity in nuclei, and, thirdly, the importance of the valence nucleons in determining structure and its evolution. We will illustrate this by showing that the interpretation of measured B(E2) values in the context of the dynamical symmetries of the IBM leads to new insights into the meaning of effective charges and offers new avenues to understand the role of the proton-neutron (p-n) interaction in modulating the nature of the valence space and the growth of collectivity. In particular, we will show that effective charges in valence models, such as the IBM, can be interpreted in terms of derivatives of the collectivity of the low lying levels, that is, as measures of the rate of change of collectivity as the proton and neutron numbers vary. This paper is based on recent work by the authors.

  20. Effective charges, the valence p-n interaction, and the IBM

    Energy Technology Data Exchange (ETDEWEB)

    Casten, R.F. [Brookhaven National Lab., Upton, NY (United States); Wolf, A. [Brookhaven National Lab., Upton, NY (United States)]|[Israel Atomic Energy Commission, Beersheba (Israel). Nuclear Research Center-Negev

    1992-10-01

    There are three recent themes in nuclear structure that come together in an interesting and useful way via the concept of effective charges and the framework of the IBM. These three concepts are the importance of dynamical symmetries in describing nuclear structure and the benefits that accrue from their exploitation, secondly, the critical role of the p-n interaction in the onset and development of collectivity in nuclei, and, thirdly, the importance of the valence nucleons in determining structure and its evolution. We will illustrate this by showing that the interpretation of measured B(E2) values in the context of the dynamical symmetries of the IBM leads to new insights into the meaning of effective charges and offers new avenues to understand the role of the proton-neutron (p-n) interaction in modulating the nature of the valence space and the growth of collectivity. In particular, we will show that effective charges in valence models, such as the IBM, can be interpreted in terms of derivatives of the collectivity of the low lying levels, that is, as measures of the rate of change of collectivity as the proton and neutron numbers vary. This paper is based on recent work by the authors.

  1. Isoscalar pairing correlation in $^{100}{\\rm Sn}+p+n$ system

    CERN Document Server

    Tanimura, Yusuke

    2016-01-01

    We discuss the isoscalar $T=0, S=1$ pairing correlation in the low-lying states of $^{102}{\\rm Sb}={}^{100}{\\rm Sn}+p+n$ nucleus. To this end, we employ ${\\rm core}+p+n$ three-body model with the model space constructed by self-consistent mean-field calculations. The model is developed with both non-relativistic and relativistic effective interactions, the latter of which are found to be more realistic for the present case due to the pseudo-spin symmetry. It turns out that the $(L,S,T)=(0,1,0)$ pairing scheme is strongly hindered in $^{102}$Sb with the relativistic model because of the near degeneracy of the $g_{7/2}$ and $d_{5/2}$ orbitals in the valence space. This pair-breaking effect is clearly seen in the charge-exchange Gamow-Teller-type transitions rather than in the binding energies of $T=0$ and $T=1$ states.

  2. Top 50 most-cited articles on craniovertebral junction surgery.

    Science.gov (United States)

    Alan, Nima; Cohen, Jonathan Andrew; Zhou, James; Pease, Matthew; Kanter, Adam S; Okonkwo, David O; Hamilton, David Kojo

    2017-01-01

    Craniovertebral junction is a complex anatomical location posing unique challenges to the surgical management of its pathologies. We aimed to identify the fifty most-cited articles that are dedicated to this field. A keyword search using the Thomson Reuters Web of Knowledge was conducted to identify articles relevant to the field of craniovertebral junction surgery. The articles were reviewed based on title, abstract, and methods, if necessary, and then ranked based on the total number of citations to identify the fifty most-cited articles. Characteristics of the articles were determined and analyzed. The earliest top-cited article was published in 1948. When stratified by decade, 1990s was the most productive with 16 articles. The most-cited article was by Anderson and Dalonzo on a classification of odontoid fractures. By citation rate, the most-cited article was by Herms and Melcher who described Goel's technique of atlantoaxial fixation using C1 lateral mass screws and C2 pedicle screws with rod fixation. Atlantoaxial fixation was the most common topic. The United States, Barrow Neurological Institute, and VH Sonntag were the most represented country, institute, and author, respectively. The significant majority of articles were designed as case series providing level IV evidence. Using citation analysis, we have provided a list of the most-cited articles representing important contributions of various authors from many institutions across the world to the field of craniovertebral junction surgery.

  3. Top 50 most-cited articles on craniovertebral junction surgery

    Science.gov (United States)

    Alan, Nima; Cohen, Jonathan Andrew; Zhou, James; Pease, Matthew; Kanter, Adam S; Okonkwo, David O; Hamilton, David Kojo

    2017-01-01

    Background: Craniovertebral junction is a complex anatomical location posing unique challenges to the surgical management of its pathologies. We aimed to identify the fifty most-cited articles that are dedicated to this field. Methods: A keyword search using the Thomson Reuters Web of Knowledge was conducted to identify articles relevant to the field of craniovertebral junction surgery. The articles were reviewed based on title, abstract, and methods, if necessary, and then ranked based on the total number of citations to identify the fifty most-cited articles. Characteristics of the articles were determined and analyzed. Results: The earliest top-cited article was published in 1948. When stratified by decade, 1990s was the most productive with 16 articles. The most-cited article was by Anderson and Dalonzo on a classification of odontoid fractures. By citation rate, the most-cited article was by Herms and Melcher who described Goel's technique of atlantoaxial fixation using C1 lateral mass screws and C2 pedicle screws with rod fixation. Atlantoaxial fixation was the most common topic. The United States, Barrow Neurological Institute, and VH Sonntag were the most represented country, institute, and author, respectively. The significant majority of articles were designed as case series providing level IV evidence. Conclusion: Using citation analysis, we have provided a list of the most-cited articles representing important contributions of various authors from many institutions across the world to the field of craniovertebral junction surgery. PMID:28250633

  4. Two-Dimensional Measurement of n+-p Asymmetrical Junctions in Multicrystalline Silicon Solar Cells Using AFM-Based Electrical Techniques with Nanometer Resolution: Preprint

    Energy Technology Data Exchange (ETDEWEB)

    Jiang, C. S.; Moutinho, H. R.; Li, J. V.; Al-Jassim, M. M.; Heath, J. T.

    2011-07-01

    Lateral inhomogeneities of modern solar cells demand direct electrical imaging with nanometer resolution. We show that atomic force microscopy (AFM)-based electrical techniques provide unique junction characterizations, giving a two-dimensional determination of junction locations. Two AFM-based techniques, scanning capacitance microscopy/spectroscopy (SCM/SCS) and scanning Kelvin probe force microscopy (SKPFM), were significantly improved and applied to the junction characterizations of multicrystalline silicon (mc-Si) cells. The SCS spectra were taken pixel by pixel by precisely controlling the tip positions in the junction area. The spectra reveal distinctive features that depend closely on the position relative to the electrical junction, which allows us to indentify the electrical junction location. In addition, SKPFM directly probes the built-in potential over the junction area modified by the surface band bending, which allows us to deduce the metallurgical junction location by identifying a peak of the electric field. Our results demonstrate resolutions of 10-40 nm, depending on the techniques (SCS or SKPFM). These direct electrical measurements with nanometer resolution and intrinsic two-dimensional capability are well suited for investigating the junction distribution of solar cells with lateral inhomogeneities.

  5. Physics and Applications of NIS Junctions

    Energy Technology Data Exchange (ETDEWEB)

    Ullom, J N

    2001-08-24

    This paper reviews the physics and applications of Normal-Insulator-Superconductor (NIS) tunnel junctions. The current-voltage properties of NIS junctions are diode-like with a strong temperature dependence. Hence, these structures can be used as sensitive thermometers at temperatures well below the energy gap, {Delta}, of the superconducting electrode. For junction voltages comparable to {Delta}/q, current flow removes energy from the normal electrode. This property has been exploited to build refrigerators capable of cooling thin-film circuits from 0.3 K to 0.1 K. Calorimeters and bolometers for the detection of X-rays and millimeter-wave radiation, respectively, have successfully been built from NIS junctions. NIS junctions have also been used to probe the superconducting state. Finally, recent ideas for the use of NIS junctions as simple circuit elements are described.

  6. Algorithms for Junctions in Directed Acyclic Graphs

    CERN Document Server

    Ferreira, Carlos Eduardo

    2012-01-01

    Given a pair of distinct vertices u, v in a graph G, we say that s is a junction of u, v if there are in G internally vertex disjoint directed paths from s to u and from s to v. We show how to characterize junctions in directed acyclic graphs. We also consider the two problems in the following and derive efficient algorithms to solve them. Given a directed acyclic graph G and a vertex s in G, how can we find all pairs of vertices of G such that s is a junction of them? And given a directed acyclic graph G and k pairs of vertices of G, how can we preprocess G such that all junctions of k given pairs of vertices could be listed quickly? All junctions of k pairs problem arises in an application in Anthropology and we apply our algorithm to find such junctions on kinship networks of some brazilian indian ethnic groups.

  7. Ultra-shallow junction (USJ) sheet resistance measurements with a non-penetrating four point probe

    Science.gov (United States)

    Benjamin, M. C.; Hillard, R. J.; Borland, J. O.

    2005-08-01

    An accurate method to measure the four point probe (4PP) sheet resistance (RS) of ultra shallow junction (USJ) Source-Drain Extension structures is described. The method utilizes Elastic Material probes (EM-probes) to form non-penetrating contacts to the silicon surface [R.J. Hillard, P.Y. Hung, William Chism, C. Win Ye, W.H. Howland, L.C. Tan, C.E. Kalnas, Characterization and Metrology for ULSI Technology, AIP Conference proceedings 683 (2003) 802.]. The probe design is kinematic and the force is controlled to ensure elastic deformation of the probe material. The probe material is such that large direct tunneling currents can flow through the native oxide thereby forming a low impedance contact. Sheet resistance measurements on USJ implanted P+/N structures with Secondary Ion Mass Spectroscopy (SIMS) junction depths less than 15 nm have been measured. The method is demonstrated on implanted USJ structures and found to be consistent with expectations.

  8. Fracture of the Vomero-Premaxillary Junction in a Repaired Bilateral Cleft Lip and Palate Patient

    Science.gov (United States)

    Zwahlen, Roger Arthur; Jayaratne, Yasas Shri Nalaka; Htun, Su Yin; Bütow, Kurt-Wilhelm

    2014-01-01

    Although dental trauma is common in bilateral cleft lip and palate (BCLP), patients' reports on bony fractures of the vomero-premaxillary junction cannot be found. The aim of this report is to illustrate clinical findings and the technique of fracture fixation in a child suffering from a fractured vomero-premaxillary junction as well as subsequent columella lengthening. A 4-year-old girl with a repaired BCLP presented with an open mucosal laceration and fractured vomero-premaxillary junction. Open reduction and fixation of the dislocated premaxilla was performed under general anesthesia. Fractured bone pieces of the vomero-premaxillary junction were removed and sharp bone edges at the vomer and the premaxilla were grinded. The repositioned premaxilla was fixed to the lateral alveolar arches with two mucoperiosteal sutures on each side. Additional columella lengthening was performed 2 years later. All family members were very happy about the new aesthetics of the girl. Although rare, fractures of the vomero-premaxillary junction present several challenges to clinicians related to anatomical, physiological, and psychological issues. Immediate and minimal invasive treatment strategies are recommended when managing such cases. PMID:25383152

  9. Preliminary Experimental Study on Pressure Loss Coefficients of Exhaust Manifold Junction

    Directory of Open Access Journals (Sweden)

    Xiao-lu Lu

    2014-01-01

    Full Text Available The flow characteristic of exhaust system has an important impact on inlet boundary of the turbine. In this paper, high speed flow in a diesel exhaust manifold junction was tested and simulated. The pressure loss coefficient of the junction flow was analyzed. The steady experimental results indicated that both of static pressure loss coefficients L13 and L23 first increased and then decreased with the increase of mass flow ratio of lateral branch and public manifold. The total pressure loss coefficient K13 always increased with the increase of mass flow ratio of junctions 1 and 3. The total pressure loss coefficient K23 first increased and then decreased with the increase of mass flow ratio of junctions 2 and 3. These pressure loss coefficients of the exhaust pipe junctions can be used in exhaust flow and turbine inlet boundary conditions analysis. In addition, simulating calculation was conducted to analyze the effect of branch angle on total pressure loss coefficient. According to the calculation results, total pressure loss coefficient was almost the same at low mass flow rate of branch manifold 1 but increased with lateral branch angle at high mass flow rate of branch manifold 1.

  10. Molecular junctions: can pulling influence optical controllability?

    Science.gov (United States)

    Parker, Shane M; Smeu, Manuel; Franco, Ignacio; Ratner, Mark A; Seideman, Tamar

    2014-08-13

    We suggest the combination of single molecule pulling and optical control as a way to enhance control over the electron transport characteristics of a molecular junction. We demonstrate using a model junction consisting of biphenyl-dithiol coupled to gold contacts. The junction is pulled while optically manipulating the dihedral angle between the two rings. Quantum dynamics simulations show that molecular pulling enhances the degree of control over the dihedral angle and hence over the transport properties.

  11. Monomer, dimer or cyclic helicate? Coordination diversity with hard-soft P,N-donor ligands.

    Science.gov (United States)

    Constable, Edwin C; Hostettler, Nik; Housecroft, Catherine E; Murray, Niamh S; Schönle, Jonas; Soydaner, Umut; Walliser, Roché M; Zampese, Jennifer A

    2013-04-14

    We report the synthesis of copper(I) complexes of three ligands which contain a potential P,N,N,P-metal binding site. Elemental analysis confirms that the bulk products possess a composition of [CuL][PF6] where L = 1, 2 or 3. Electrospray mass spectrometry (ESI MS) provides evidence for speciation in MeCN or MeOH solutions and the formation of both [CuL]+ and [Cu2L2]2+; addition of NaCl to the ESI MS samples aids the observation of dinuclear species as [Cu2L2Cl]+ ions. NMR spectroscopic data for a CD3CN solution of [Cu(1)][PF6] were consistent with a mononuclear species, but more complex multinuclear spectra were observed for the same compound dissolved in CD2Cl2. In the solid state, dimeric species dominate. Crystals grown from CH2Cl2 solutions of [Cu(1)][PF6] are found to be [Cu2(1)2][PF6]2·6CH2Cl2; each Cu+ ion in the centrosymmetric cation is bound in an N,O,P,P-coordination sphere, the N-donor originating from the pyridine ring. In [Cu2(3)2][PF6]2, each bridging ligand in the centrosymmetric [Cu2(3)2]2+ ion acts as a P,N-chelate to each Cu+ ion. Competing with this dimeric assembly is that of a circular helicate in which each ligand 3 bridges adjacent pairs of copper(I) ions in a chiral, hexameric complex; both the Δ,Δ,Δ,Δ,Δ,Δ- and Λ,Λ,Λ,Λ,Λ,Λ-enantiomers are present in the crystal lattice; in [Cu6(3)6]6+, each ligand coordinates as a bis(P,N-chelate). The solution absorption spectra of [Cu(1)][PF6], [Cu(2)][PF6] and [Cu(3)][PF6] are dominated by ligand-based transitions and none of the copper(I) complexes exhibits emissive behaviour in solution.

  12. Photovoltaic nanopillar radial junction diode architecture enhanced by integrating semiconductor quantum dot nanocrystals as light harvesters

    Science.gov (United States)

    Güzeltürk, Burak; Mutlugün, Evren; Wang, Xiaodong; Pey, Kin Leong; Demir, Hilmi Volkan

    2010-08-01

    We propose and demonstrate colloidal quantum dot hybridized, radial p-n junction based, nanopillar solar cells with photovoltaic performance enhanced by intimately integrating nanocrystals to serve as light harvesting agents around the light trapping pillars. By furnishing Si based nanopillar photovoltaic diodes with CdSe quantum dots, we experimentally showed up to sixfold enhancement in UV responsivity and ˜13% enhancement in overall solar conversion efficiency. The maximum responsivity enhancement achieved by incorporation of nanocrystals in the nanopillar architecture is found to be spectrally more than four times larger than the responsivity enhancement obtained using planar architecture of the same device.

  13. Hybrid tunnel junction contacts to III-nitride light-emitting diodes

    Science.gov (United States)

    Young, Erin C.; Yonkee, Benjamin P.; Wu, Feng; Oh, Sang Ho; DenBaars, Steven P.; Nakamura, Shuji; Speck, James S.

    2016-02-01

    In this work, we demonstrate highly doped GaN p-n tunnel junction (TJ) contacts on III-nitride heterostructures where the active region of the device and the top p-GaN layers were grown by metal organic chemical vapor deposition and highly doped n-GaN was grown by NH3 molecular beam epitaxy to form the TJ. The regrowth interface in these hybrid devices was found to have a high concentration of oxygen, which likely enhanced tunneling through the diode. For optimized regrowth, the best tunnel junction device had a total differential resistivity of 1.5 × 10-4 Ω cm2, including contact resistance. As a demonstration, a blue-light-emitting diode on a (20\\bar{2}\\bar{1}) GaN substrate with a hybrid tunnel junction and an n-GaN current spreading layer was fabricated and compared with a reference sample with a transparent conducting oxide (TCO) layer. The tunnel junction LED showed a lower forward operating voltage and a higher efficiency at a low current density than the TCO LED.

  14. Switching Current Distributions in Superconductor-Topological Insulator-Superconductor Junctions

    Science.gov (United States)

    Murphy, Andrew; Zhang, Can; Huemiller, Erik; Oh, Seongshik; Eckstein, James; van Harlingen, Dale; Bezryadin, Alexey

    It has been proposed that localized Majorana fermion (MF) modes can exist in lateral Josephson junctions with a 3D-topological insulator barrier at locations at which the phase difference across the junction is an odd multiple of π. These states enter the junctions bound to the nodes of the Josephson vortices as a perpendicular magnetic field is increased. Each mode contributes a local 4 π-periodic sin(φ/2)-component to the junction's current-phase relation, adding to the usual sin(φ) dependence. The sign of this new term encodes the parity of the Majorana pair. As a way to detect these states and measure their parity, we study the distribution of switching currents in Nb-Bi2Se3-Nb junctions fabricated on thin Bi2Se3 films in which the superconductivity is induced by a pair of closely spaced Nb electrodes. We expect that such measurements will be sensitive to the parity of the MFs, yielding a splitting of the distribution. Preliminary measurements of the critical current distributions show the onset of unusual features when the magnetic field is increased which we are analyzing to determine if they may arise from Majorana fermions in the junctions.

  15. Loss models for long Josephson junctions

    DEFF Research Database (Denmark)

    Olsen, O. H.; Samuelsen, Mogens Rugholm

    1984-01-01

    A general model for loss mechanisms in long Josephson junctions is presented. An expression for the zero-field step is found for a junction of overlap type by means of a perturbation method. Comparison between analytic solution and perturbation result shows good agreement.......A general model for loss mechanisms in long Josephson junctions is presented. An expression for the zero-field step is found for a junction of overlap type by means of a perturbation method. Comparison between analytic solution and perturbation result shows good agreement....

  16. Experimental study of exclusive $^2$H$(e,e^\\prime p)n$ reaction mechanisms at high $Q^2$

    CERN Document Server

    Egiyan, K S; Amaryan, M J; Ambrozewicz, P; Anefalos Pereira, S; Anghinolfi, M; Asryan, G; Audit, G; Avakian, H; Bagdasaryan, H; Baillie, N; Ball, J P; Baltzell, N A; Barrow, S; Batourine, V; Battaglieri, M; Bedlinskiy, I; Bektasoglu, M; Bellis, M; Benmouna, N; Berman, B L; Biselli, A S; Blaszczyk, L; Boiarinov, S; Bouchigny, S; Bradford, R; Branford, D; Briscoe, W J; Brooks, W K; Burkert, V D; Butuceanu, C; Bültmann, S; Calarco, J R; Careccia, S L; Carman, D S; Cazes, A; Chen, S; Cole, P L; Collins, P; Coltharp, P; Cords, D; Corvisiero, P; Crabb, D; Credé, V; Cummings, J P; Dashyan, N B; De Masi, R; De Sanctis, E; De Vita, R; Degtyarenko, P V; Denizli, H; Dennis, L; Deur, A; Dharmawardane, K V; Dickson, R; Djalali, C; Dodge, G E; Donnelly, J; Doughty, D; Dugger, M; Dytman, S; Dzyubak, O P; Egiyan, H; El Fassi, L; Elouadrhiri, L; Eugenio, P; Fatemi, R; Fedotov, G; Feldman, G; Fersch, R; Feuerbach, R J; Garçon, M; Gavalian, G; Gevorgyan, N; Gilfoyle, G P; Giovanetti, K L; Girod, F X; Goetz, J T; Gonenc, A; Gordon, C I O; Gothe, R W; Griffioen, K A; Guidal, M; Guillo, M; Guler, N; Guo, L; Gyurjyan, V; Hadjidakis, C; Hafidi, K; Hakobyan, H; Hakobyan, R S; Hanretty, C; Hardie, J; Hersman, F W; Hicks, K; Hleiqawi, I; Holtrop, M; Hyde-Wright, C E; Ilieva, Y; Ireland, D G; Ishkhanov, B S; Isupov, E L; Ito, M M; Jenkins, D; Jo, H S; Joo, K; Jüngst, H G; Kalantarians, N; Kellie, J D; Khandaker, M; Kim, W; Klein, A; Klein, F J; Klimenko, A V; Kossov, M; Krahn, Z; Kramer, L H; Kubarovski, V; Kuhn, S E; Kuleshov, S V; Kühn, J; Lachniet, J; Laget, J M; Langheinrich, J; Lawrence, D; Li, Ji; Livingston, K; Lu, H Y; MacCormick, M; Marchand, C; Markov, N; Mattione, P; McAleer, S; McKinnon, B; McNabb, J W C; Mecking, B A; Mehrabyan, S S; Melone, J J; Mestayer, M D; Meyer, C A; Mibe, T; Mikhailov, K; Minehart, R C; Mirazita, M; Miskimen, R; Mokeev, V; Moriya, K; Morrow, S A; Moteabbed, M; Munevar, E; Mutchler, G S; Müller, J; Nadel-Turonski, P; Nasseripour, R; Niccolai, S; Niculescu, G; Niculescu, I; Niczyporuk, B B; Niroula, M R; Niyazov, R A; Nozar, M; O'Rielly, G V; Osipenko, M; Ostrovidov, A I; Park, K; Pasyuk, E; Paterson, C; Pierce, J; Pivnyuk, N; Pocanic, D; Pogorelko, O I; Pozdniakov, S; Preedom, B M; Price, J W; Prok, Y; Protopopescu, D; Raue, B A; Riccardi, G; Ricco, G; Ripani, M; Ritchie, B G; Ronchetti, F; Rosner, G; Rossi, P; Sabatie, F; Salamanca, J; Salgado, C; Santoro, J P; Sapunenko, V; Schumacher, R A; Serov, V S; Sharabyan, Yu G; Shvedunov, N V; Skabelin, A V; Smith, E S; Smith, L C; Sober, D I; Sokhan, D; Stavinsky, A V; Stepanyan, S; Stepanyan, S S; Stokes, B E; Stoler, P; Strauch, S; Taiuti, M; Tedeschi, D J; Thoma, U; Tkabladze, A; Tkachenko, S I; Todor, L; Tur, C; Ungaro, M; Vineyard, M F; Vlassov, A V; Watts, D P; Weinstein, L B; Weygand, D P; Williams, M; Wolin, E; Wood, M H; Yegneswaran, A; Zana, L; Zhang, J; Zhao, B; Zhao, Z W

    2007-01-01

    The reaction $^2$H$(e,e^\\prime p)n$ has been studied with full kinematic coverage for photon virtuality $1.75p_n<100$ MeV/c) the neutron is primarily a spectator and the reaction can be described by the plane-wave impulse approximation. For $100<p_n<750$ MeV/c proton-neutron rescattering dominates the cross section, while $\\Delta$ production followed by the $N\\Delta \\to NN$ transition is the primary contribution at higher momenta.

  17. Near threshold ⁷Li(p,n) ⁷Be reaction as neutron source for BNCT.

    Science.gov (United States)

    Minsky, D M; Kreiner, A J

    2015-12-01

    (7)Li(p,n)(7)Be is an endothermic reaction and working near its threshold (1.88 MeV) has the advantage of neutron spectra with maximum energies of about 100 keV, considerably lower than at higher beam energies, or than using other neutron-producing reactions or as for the uranium fission spectrum, relevant for BNCT based on nuclear reactors. With this primary energy it is much easier to obtain the energies needed for treating deep seated tumors by BNCT (about 10 keV). This work studies bombarding energies up to 2.05 MeV, different beam incidence angles and the effect of the undesirable gamma production via the (7)Li(p,γp') (7)Li reaction.

  18. High breakdown single-crystal GaN p-n diodes by molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Qi, Meng; Zhao, Yuning; Yan, Xiaodong; Li, Guowang; Verma, Jai; Fay, Patrick [Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556 (United States); Nomoto, Kazuki; Zhu, Mingda; Hu, Zongyang; Protasenko, Vladimir; Song, Bo; Xing, Huili Grace; Jena, Debdeep, E-mail: djena@cornell.edu [Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556 (United States); Departments of ECE and MSE, Cornell University, Ithaca, New York 14853 (United States); Bader, Samuel [Departments of ECE and MSE, Cornell University, Ithaca, New York 14853 (United States)

    2015-12-07

    Molecular beam epitaxy grown GaN p-n vertical diodes are demonstrated on single-crystal GaN substrates. A low leakage current <3 nA/cm{sup 2} is obtained with reverse bias voltage up to −20 V. With a 400 nm thick n-drift region, an on-resistance of 0.23 mΩ cm{sup 2} is achieved, with a breakdown voltage corresponding to a peak electric field of ∼3.1 MV/cm in GaN. Single-crystal GaN substrates with very low dislocation densities enable the low leakage current and the high breakdown field in the diodes, showing significant potential for MBE growth to attain near-intrinsic performance when the density of dislocations is low.

  19. Dielectric Studies on Fe3O4 Nanodoped p-n-Alkyloxybenzoic Acids

    Directory of Open Access Journals (Sweden)

    S. Sreehari Sastry

    2014-01-01

    Full Text Available The stability of phase transition temperatures and textural changes for thermotropic pure and nanodoped p-n-alkyloxybenzoic acid mesogens were aimed to study at considerable time periods. Frequency and temperature dependent dielectric constant and dielectric loss for the pure and nanodoped liquid crystals were carried out. Significant anomalies in dielectric studies were observed near phase transitions when dielectric constant and dielectric loss had been measured as a function of temperature and frequency. Changes in dielectric constant and loss were observed and there were no apparent changes at high frequencies instead maintaining constant values. The variations in conductivity, activation energy, and relaxation times had also been studied in the nematic and smectic phases. The temperature dependent dielectric constant stability (temperature coefficient of dielectric constant τε had shown shift in the observed frequency range of thermotropic liquid crystals corresponding to the change in the dielectric constant values.

  20. On local-global divisibility by $p^n$ in elliptic curves

    CERN Document Server

    Paladino, Laura; Viada, Evelina

    2011-01-01

    Let $ p $ be a prime number and let $k$ be a number field, which does not contain the field $\\mathbb{Q} (\\zeta_p + \\bar{\\zeta_p})$. Let $\\mathcal{E}$ be an elliptic curve defined over $k$. We prove that if there are no $k$-rational torsion points of exact order $p$ on $\\mathcal{E}$, then the local-global principle holds for divisibility by $p^n$, with $n$ a natural number. As a consequence of the deep theorems of Merel, Mazur and Kamienny we deduce that, for $p$ larger than a constant $C ([k:\\mathbb{Q}])$, depending only on the degree of $k$, there are no counterexamples to the local-global divisibility principle. In particular, for the rational numbers $C(1)=7$ and for quadratic fields $C(2)=13$.

  1. DLTS Study of RIE-Induced Deep Levels in Si Using p+n Diode Arrays

    Science.gov (United States)

    Watanabe, Miyoko Oku; Taguchi, Minoru; Kanzaki, Koichi; Zohta, Yasuhito

    1983-02-01

    Deep levels in Si induced by reactive ion etching (RIE) of SiO2 film have been studied by DLTS. In order to detect the RIE-induced damage existing near the surface region, special device structures consisting of p+n diode arrays are used. It is found that the dominant deep levels produced by RIE are four hole traps. One level at Ev+0.40 eV exhibits the Poole-Frenkel effect, from which it is identified as an acceptor. Another level at Ev+0.46 eV is deduced to be an interstitial iron level from the emission rate. There is a strong decrease in the deep level concentrations upon annealing above 500°C. However, the deep levels do not completely disappear upon annealing at high temperatures. The deep level concentrations correlate well with the current-voltage characteristics of the devices.

  2. Stereoselective coordination: a six-membered P,N-chelate tailored for asymmetric allylic alkylation.

    Science.gov (United States)

    Császár, Z; Farkas, G; Bényei, A; Lendvay, G; Tóth, I; Bakos, J

    2015-10-01

    Six-membered chelate complexes [Pd(1a-b)Cl2], (2a-b) and [Pd(1a-b)(η(3)-PhCHCHCHPh)]BF4, (3a-b) of P,N-type ligands 1a, ((2S,4S)-2-diphenyl-phosphino-4-isopropylamino-pentane) and 1b, ((2S,4S)-2-diphenyl-phosphino-4-methylamino-pentane) have been prepared. The Pd-complexes have been characterized in solution by 1D and 2D NMR spectroscopy. The observed structures were confirmed by DFT calculations and in the case of 2a also by X-ray crystallography. Unexpectedly, the coordination of the all-carbon-backbone aminophosphine 1a resulted in not only a stereospecific locking of the donor nitrogen atom into one of the two possible configurations but also the conformation of the six-membered chelate rings containing three alkyl substituents was forced into the same single chair structure showing the axially placed isopropyl group on the coordinated N-atom. The stereodiscriminative complexation of 1a led to the formation of a palladium catalyst with a conformationally rigid chelate having a configurationally fixed nitrogen and electronically different coordination sites due to the presence of P and N donors. The stereochemically fixed catalyst provided excellent ee's (up to 96%) and activities in asymmetric allylic alkylation reactions. In contrast, the chelate rings formed by 1b exist in two different chair conformations, both containing axial methyl groups, but with the opposite configurations of the coordinated N-atom. Pd-complexes of 1b provided low enantioselectivities in similar alkylations, therefore emphasizing the importance of the stereoselective coordination of N-atoms in analogous P-N chelates. The factors determining the coordination of the ligands were also studied with respect to the chelate ring conformation and the nitrogen configuration.

  3. p-n Heterojunction of doped graphene films obtained by pyrolysis of biomass precursors.

    Science.gov (United States)

    Latorre-Sánchez, Marcos; Primo, Ana; Atienzar, Pedro; Forneli, Amparo; García, Hermenegildo

    2015-02-25

    Nitrogen-doped graphene [(N)G] obtained by pyrolysis at 900 °C of nanometric chitosan films exhibits a Hall effect characteristic of n-type semiconductors. In contrast, boron-doped graphene [(B)G] obtained by pyrolysis of borate ester of alginate behaves as a p-type semiconductor based also on the Hall effect. A p-n heterojunction of (B)G-(N)G films is built by stepwise coating of a quartz plate using a mask. The heterojunction is created by the partial overlapping of the (B)G-(N)G films. Upon irradiation with a xenon lamp of aqueous solutions of H(2) PtCl(6) and MnCl(2) in contact with the heterojunction, preferential electron migration from (B)G to (N)G with preferential location of positive holes on (B)G is established by observation in scanning electron microscopy of the formation of Pt nanoparticles (NP) on (N)G and MnO(2) NP on (B)G. The benefits of the heterojunction with respect to the devices having one individual component as a consequence of the electron migration through the p-n heterojunction are illustrated by measuring the photocurrent in the (B)G-(N)G heterojunction (180% current enhancement with respect to the dark current) and compared it to the photocurrent of the individual (B)G (15% enhancement) and (N)G (55% enhancement) components. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  4. Acceptance Data Package: SXI Stepper Motor/Encoder. Aeroflex P/N 16187. A; Engineering Drawings and Associated Lists

    Science.gov (United States)

    1994-01-01

    Acceptance data package - engineering drawings and associated lists for fabrication, assembly and maintenance (cleaning, fluidized bed coating, bounding and staking) motor/encoded solar x-ray imager (SXI) (Aeroflex p/n 16187) were given.

  5. Convenient Synthesis of Multi-dentate P,N-Ligand by HCl Elimination of N-Hetrocycle with Organophosphine Reagent

    Institute of Scientific and Technical Information of China (English)

    LI,Qing-Shan; WAN,Chong-Qing; XU,Feng-Bo; ZHANG,Zheng-Zhi

    2004-01-01

    @@ The multi-dentate ligands and their complexes have attracted more and more interests in supramolecular chemistry and catalysis.[1,2] Recently, we found a convenient and efficient method to synthesize this kind of P,N-ligands. The C-Hor C-Cl bond in N-heterocycle was activated in presence of corresponding organophospine reagent and the HCl elimination was fluent, giving the multi-dentate P,N-ligands.

  6. Amyotrophic Lateral Sclerosis (ALS)

    Science.gov (United States)

    ... ALS Neurons' broken machinery piles up in ALS Esclerosis Lateral Amiotrófica Dormant viral genes may awaken to ... Dementia Information Page Multifocal Motor Neuropathy Information Page Multiple Sclerosis Information Page Muscular Dystrophy Information Page Myasthenia ...

  7. Amyotrophic lateral sclerosis (ALS)

    Science.gov (United States)

    Lou Gehrig disease; ALS; Upper and lower motor neuron disease; Motor neuron disease ... 98. Shaw PJ. Amyotrophic lateral sclerosis and other motor neuron diseases. In: Goldman L, Schafer AI, eds. Goldman's Cecil ...

  8. Gap junctions and connexin-interacting proteins

    NARCIS (Netherlands)

    Giepmans, Ben N G

    2004-01-01

    Gap junctions form channels between adjacent cells. The core proteins of these channels are the connexins. Regulation of gap junction communication (GJC) can be modulated by connexin-associating proteins, such as regulatory protein phosphatases and protein kinases, of which c-Src is the best-studied

  9. Gap junctions and connexin-interacting proteins

    NARCIS (Netherlands)

    Giepmans, Ben N G

    2004-01-01

    Gap junctions form channels between adjacent cells. The core proteins of these channels are the connexins. Regulation of gap junction communication (GJC) can be modulated by connexin-associating proteins, such as regulatory protein phosphatases and protein kinases, of which c-Src is the

  10. Gap junctions and connexin-interacting proteins

    NARCIS (Netherlands)

    Giepmans, Ben N G

    2004-01-01

    Gap junctions form channels between adjacent cells. The core proteins of these channels are the connexins. Regulation of gap junction communication (GJC) can be modulated by connexin-associating proteins, such as regulatory protein phosphatases and protein kinases, of which c-Src is the best-studied

  11. Shot noise in YBCO bicrystal Josephson junctions

    DEFF Research Database (Denmark)

    Constantinian, K.Y.; Ovsyannikov, G.A.; Borisenko, I.V.;

    2003-01-01

    We measured spectral noise density in YBCO symmetric bicrystal Josephson junctions on sapphire substrates at bias voltages up to 100 mV and T 4.2 K. Normal state resistance of the Josephson junctions, R-N = 20-90 Omega and ICRN up to 2.2 mV have been observed in the experimental samples. Noise...

  12. Shear zone junctions: Of zippers and freeways

    Science.gov (United States)

    Passchier, Cees W.; Platt, John P.

    2017-02-01

    Ductile shear zones are commonly treated as straight high-strain domains with uniform shear sense and characteristic curved foliation trails, bounded by non-deforming wall rock. Many shear zones, however, are branched, and if movement on such branches is contemporaneous, the resulting shape can be complicated and lead to unusual shear sense arrangement and foliation geometries in the wall rock. For Y-shaped shear zone triple junctions with three joining branches and transport direction at a high angle to the branchline, only eight basic types of junction are thought to be stable and to produce significant displacement. The simplest type, called freeway junctions, have similar shear sense in all three branches. The other types show joining or separating behaviour of shear zone branches similar to the action of a zipper. Such junctions may have shear zone branches that join to form a single branch (closing zipper junction), or a single shear zone that splits to form two branches, (opening zipper junction). All categories of shear zone junctions show characteristic foliation patterns and deflection of markers in the wall rock. Closing zipper junctions are unusual, since they form a non-active zone with opposite deflection of foliations in the wall rock known as an extraction fault or wake. Shear zipper junctions can form domains of overprinting shear sense along their flanks. A small and large field example are given from NE Spain and Eastern Anatolia. The geometry of more complex, 3D shear zone junctions with slip parallel and oblique to the branchline is briefly discussed.

  13. High-resolution scanning near-field EBIC microscopy: Application to the characterisation of a shallow ion implanted p{sup +}-n silicon junction

    Energy Technology Data Exchange (ETDEWEB)

    Smaali, K. [Laboratoire de Microscopies et d' Etude de Nanostructures, EA 3799, Universite de Reims, 21 Rue Clement Ader, 51685 Reims Cedex 2 (France); Faure, J. [Laboratoire de Microscopie Electronique Analytique, ERM 0203, Universite de Reims, 21 Rue Clement Ader, 51685 Reims Cedex 2 (France); El Hdiy, A. [Laboratoire de Microscopies et d' Etude de Nanostructures, EA 3799, Universite de Reims, 21 Rue Clement Ader, 51685 Reims Cedex 2 (France); Troyon, M. [Laboratoire de Microscopies et d' Etude de Nanostructures, EA 3799, Universite de Reims, 21 Rue Clement Ader, 51685 Reims Cedex 2 (France)], E-mail: michel.troyon@univ-reims.fr

    2008-05-15

    High-resolution electron beam induced current (EBIC) analyses were carried out on a shallow ion implanted p{sup +}-n silicon junction in a scanning electron microscope (SEM) and a scanning probe microscope (SPM) hybrid system. With this scanning near-field EBIC microscope, a sample can be conventionally imaged by SEM, its local topography investigated by SPM and high-resolution EBIC image simultaneously obtained. It is shown that the EBIC imaging capabilities of this combined instrument allows the study of p-n junctions with a resolution of about 20 nm.

  14. Junction conditions of cosmological perturbations

    CERN Document Server

    Tomita, K

    2004-01-01

    The behavior of perturbations is studied in cosmological models which consist of two different homogeneous regions connected in a spherical shell boundary. The junction conditions for the metric perturbations and the displacements of the shell boundary are analyzed and the surface densities of the perturbed energy and momentum in the shell are derived, using Mukohyama's gauge-invariant formalism and the Israel discontinuity condition. In both homogeneous regions the perturbations of scalar, vector and tensor types are expanded using the 3-dimensional harmonic functions, but the model coupling among them is caused in the shell by the inhomogeneity. By treating the perturbations with odd and even parities separately, it is found, however, that we can have consistent displacements and surface densities for given metric parturbations

  15. Cervical spine imaging in trauma: Does the use of grid and filter combination improve visualisation of the cervicothoracic junction?

    Energy Technology Data Exchange (ETDEWEB)

    Goyal, Nimit, E-mail: nimitgoyal@doctors.org.u [University Hospital of Wales, Heath Park, Cardiff, CF14 4XW (United Kingdom); Rachapalli, Vamsidhar; Burns, Helen; Lloyd, David C.F. [University Hospital of Wales, Heath Park, Cardiff, CF14 4XW (United Kingdom)

    2011-02-15

    Purpose: To evaluate the usefulness of filter and anti-scatter grid combination in demonstrating the cervicothoracic junction in lateral cervical spine radiographs performed for trauma patients. Methods: Following a change in departmental protocol in our hospital, anti-scatter grid and filter are routinely used for lateral cervical spine radiograph in all trauma patients with immobilised cervical spine. A retrospective study was done to compare the efficacy of lateral cervical spine radiographs in demonstrating the cervicothoracic junction for a period of three months before and after the implementation of the change. All images were independently evaluated by two observers. Results: 253 trauma patients had a lateral cervical spine radiograph done in January to March 2003 without using the anti-scatter grid and filter while 309 patients in January to March 2007, using filter and grid. Inter-observer variability between the two observers was calculated using Cohen's Kappa which showed good and very good agreement for 2003 and 2007 respectively. 126 (49.8%) images adequately demonstrated the cervicothoracic junction without using filter and grid while 189 (61.1%) were adequate following their use. This was statistically significant (Fischer exact test, p value = 0.0081). Conclusion: The use of filter and anti-scatter grids improves the visualisation of cervicothoracic junction in lateral cervical spine imaging and reduces the need to repeat exposure.

  16. Inverse kinematics (p, n) reactions studies using the WINDS slow neutron detector and the SAMURAI spectrometer

    Science.gov (United States)

    Yasuda, J.; Sasano, M.; Zegers, R. G. T.; Baba, H.; Chao, W.; Dozono, M.; Fukuda, N.; Inabe, N.; Isobe, T.; Jhang, G.; Kameda, D.; Kubo, T.; Kurata-Nishimura, M.; Milman, E.; Motobayashi, T.; Otsu, H.; Panin, V.; Powell, W.; Sakai, H.; Sako, M.; Sato, H.; Shimizu, Y.; Stuhl, L.; Suzuki, H.; Tangwancharoen, S.; Takeda, H.; Uesaka, T.; Yoneda, K.; Zenihiro, J.; Kobayashi, T.; Sumikama, T.; Tako, T.; Nakamura, T.; Kondo, Y.; Togano, Y.; Shikata, M.; Tsubota, J.; Yako, K.; Shimoura, S.; Ota, S.; Kawase, S.; Kubota, Y.; Takaki, M.; Michimasa, S.; Kisamori, K.; Lee, C. S.; Tokieda, H.; Kobayashi, M.; Koyama, S.; Kobayashi, N.; Wakasa, T.; Sakaguchi, S.; Krasznahorkay, A.; Murakami, T.; Nakatsuka, N.; Kaneko, M.; Matsuda, Y.; Mucher, D.; Reichert, S.; Bazin, D.; Lee, J. W.

    2016-06-01

    We have combined the low-energy neutron detector WINDS (Wide-angle Inverse-kinematics Neutron Detectors for SHARAQ) and the SAMURAI spectrometer at RIKEN Nishina Center RI Beam Factory (RIBF) in order to perform (p, n) reactions in inverse kinematics for unstable nuclei in the mass region around A ∼ 100 . In this setup, WINDS is used for detecting recoil neutrons and the SAMURAI spectrometer is used for tagging decay channel of heavy residue. The first experiment by using the setup was performed to study Gamow-Teller transitions from 132Sn in April 2014. The atomic number Z and mass-to-charge ratio A / Q of the beam residues were determined from the measurements of time of flight, magnetic rigidity and energy loss. The obtained A / Q and Z resolutions were σA/Q = 0.14 % and σZ = 0.22 , respectively. Furthermore, owing to the large momentum acceptance (50 %) of SAMURAI, the beam residues associated with the γ , 1n and 2n decay channel were measured in the same magnetic field setting. The kinematic loci of the measured recoil neutron energy and laboratory angle are clearly seen. It shows that the excitation energy up to about 20 MeV can be reconstructed.

  17. p/n-Polarity of thiophene oligomers in photovoltaic cells: role of molecular vs. supramolecular properties.

    Science.gov (United States)

    Ghosh, Tanwistha; Gopal, Anesh; Saeki, Akinori; Seki, Shu; Nair, Vijayakumar C

    2015-04-28

    Molecular and supramolecular properties play key roles in the optoelectronic properties and photovoltaic performances of organic materials. In the present work, we show how small changes in the molecular structure affect such properties, which in turn control the intrinsic and fundamental properties such as the p/n-polarity of organic semiconductors in bulk-heterojunction solar cells. Herein, we designed and synthesized two acceptor-donor-acceptor type semiconducting thiophene oligomers end-functionalized with oxazolone/isoxazolone derivatives (OT1 and OT2 respectively). The HOMO-LUMO energy levels of both derivatives were found to be positioned in such a way that they can act as electron acceptors to P3HT and electron donors to PCBM. However, OT1 functions as a donor (with PCBM) and OT2 as an acceptor (with P3HT) in BHJ photovoltaic cells, and their reverse roles results in either no or poor performance of the cells. Detailed studies using UV-vis absorption and fluorescence spectroscopy, time-correlated single photon counting, UV-photoelectron spectroscopy, density functional theory calculations, X-ray diffraction, and thermal gravimetric analysis proved that both molecular and supramolecular properties contributed equally but in a contrasting manner to the abovementioned observation. The obtained results were further validated by flash-photolysis time-resolved microwave conductivity studies which showed an excellent correlation between the structure, property, and device performances of the materials.

  18. $^{12}$C(p,n)$^{12}$N reaction at 135 MeV

    CERN Document Server

    Anderson, B D; Millener, D J; Manley, D M; Baldwin, A R; Fazely, A; Madey, R; Tamimi, N; Watson, J W; Foster, C C

    1996-01-01

    We report observations from the (p,n) reaction on 12C at 135 MeV. The experiment was performed with the beam-swinger neutron time-of-flight system at the Indiana University Cyclotron Facility. Neutrons were detected in large-volume plastic scintillation detectors located in three detector stations at 0 deg, 24 deg, and 45 deg with respect to the undeflected beam line; the flight paths were 91 m, 91 m, and 74 m, respectively. Overall time resolutions of about 825 ps provided energy resolutions of about 350 keV in the first two stations and about 425 keV in the third station. The angular distributions for states with excitation energies up to 10 MeV are presented and comparisons are made with DWIA calculations that use one-body density matrices from 0hw and 1hw shell-model calculations. New information is deduced on the excitation energies, widths and spin-parity assignments for several energy levels of 12N.

  19. Thermal stability of boron nitride/silicon p-n heterojunction diodes

    Energy Technology Data Exchange (ETDEWEB)

    Teii, Kungen, E-mail: teii@asem.kyushu-u.ac.jp; Mizusako, Yusei; Hori, Takuro [Department of Applied Science for Electronics and Materials, Interdisciplinary Graduate School of Engineering Sciences, Kyushu University, Kasuga, Fukuoka 816-8580 (Japan); Matsumoto, Seiichiro [Department of Applied Science for Electronics and Materials, Interdisciplinary Graduate School of Engineering Sciences, Kyushu University, Kasuga, Fukuoka 816-8580 (Japan); Exploratory Materials Research Laboratory for Energy and Environment, National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan)

    2015-10-21

    Heterojunctions of p-type cubic boron nitride (cBN) and n-type silicon with sp{sup 2}-bonded BN (sp{sup 2}BN) interlayers are fabricated under low-energy ion impact by plasma-enhanced chemical vapor deposition, and their rectification properties are studied at temperatures up to 573 K. The rectification ratio is increased up to the order of 10{sup 5} at room temperature by optimizing the thickness of the sp{sup 2}BN interlayer and the cBN fraction for suppressing the reverse leakage current. A highly rectifying p-type cBN/thick sp{sup 2}BN/n-type silicon junction diode shows irreversible rectification properties mainly characterized by a marked decrease in reverse current by an order of magnitude in an initial temperature ramp/down cycle. This irreversible behavior is much more reduced by conducting the cycle twice or more. The temperature-dependent properties confirm an overall increase in effective barrier heights for carrier injection and conduction by biasing at high temperatures, which consequently increases the thermal stability of the diode performance.

  20. Topological Phases in Graphene Nanoribbons: Junction States, Spin Centers, and Quantum Spin Chains

    Science.gov (United States)

    Cao, Ting; Zhao, Fangzhou; Louie, Steven G.

    2017-08-01

    We show that semiconducting graphene nanoribbons (GNRs) of different width, edge, and end termination (synthesizable from molecular precursors with atomic precision) belong to different electronic topological classes. The topological phase of GNRs is protected by spatial symmetries and dictated by the terminating unit cell. We have derived explicit formulas for their topological invariants and shown that localized junction states developed between two GNRs of distinct topology may be tuned by lateral junction geometry. The topology of a GNR can be further modified by dopants, such as a periodic array of boron atoms. In a superlattice consisting of segments of doped and pristine GNRs, the junction states are stable spin centers, forming a Heisenberg antiferromagnetic spin 1 /2 chain with tunable exchange interaction. The discoveries here not only are of scientific interest for studies of quasi-one-dimensional systems, but also open a new path for design principles of future GNR-based devices through their topological characters.

  1. Structural and Electrical Properties of Heteroepitaxial Magnetic Oxide Junction Diode Fabricated by Pulsed Laser Deposition

    Science.gov (United States)

    Li, M. K.; Wong, K. H.

    2010-11-01

    Heteroepitaxial junctions formed by p-type strontium doped lanthanum manganite and n-type cobalt doped titanium dioxide were fabricated on LaAlO3 (100) substrates by pulsed laser deposition. The La0.7Sr0.3MnO3 (LSMO) layers were grown at 650° C and under 150 mTorr ambient oxygen pressure. They showed room temperature ferromagnetism and metallic-like electrical conduction with a resistivity of 0.015 ohm cm at 300 K. The CoxTi1-xO2[x = 0.05 and 0.1] (CTO), which, at anatase phase, was reported as a wide-band-gap dilute magnetic semiconductor, was deposited on the LSMO film surface at 600° C with an ambient oxygen pressure of 20 mTorr. The as-grown CTO films exhibited pure anatase crystalline phase and semiconductor-like conduction. Under optimized fabrication conditions the CTO/LSMO junction revealed a heteroepitaxial relationship of (004)CTO‖‖(001)LSMO‖‖(001)LAO. Electrical characterization of these p-n junctions yielded excellent rectifying characteristics with a current rectifying ratio over 1000 at room temperature. The electrical transport across these diodes was dominated by diffusion current at low current (low bias voltage) regime and by recombination current at high current (high bias voltage) regime. Our results have demonstrated an all-oxide spintronic junction diode with good transport property. The simultaneous of electrical and magnetic modulation in a diode junction is therefore potentially realizable.

  2. Study of the electroplated of Ni for betavoltaic battery using PN junction without seed layer

    Energy Technology Data Exchange (ETDEWEB)

    Uhm, Young Rang; Kim, Jong Bum; Son, Kwang Jae [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of); Cho, Byoung Gun [Electronics and Telecommunications Research Institute, Daejeon (Korea, Republic of)

    2015-10-15

    The mechanism of a nuclear battery is same as the P.N junction diode for solar cell application. The photovoltaic is operated by converting photons into electrical energy in the junction. In a betavoltaic battery, beta particles are collected and converted into electrical energy with a similar principle as a photovoltaic. If a radioisotope (RI) with a long half-life (over 100 years) is used, the lifetime of the power source is extended to as long as the half-life time of the RI. Hence, the power sources we describe could extend a system's operating life by several decades or even a century, during which time the system can gain learned behavior without worrying about the power turning off. The beta spectrum of {sup 63}Ni is below the radiation damage threshold (approximately 200 keV for Si) of semiconductors such as Si and SiC. Beta particles of 63Ni were deposited by electroplating on the Ni-foil substrate and attached on the trench P-N absorber with a spacing of 50 μm. The optimum total thickness of the 63Ni layer was determined to be about 2 μm, when regarding the minimum self-shielding effect of the beta-ray (β-ray). The optimum condition of the electroplating {sup 63}Ni was determined at current density of 20 mA/cm{sup 2}.

  3. Coordinate transformation in the model of long Josephson junctions: geometrically equivalent Josephson junctions

    Science.gov (United States)

    Semerdzhieva, E. G.; Boyadzhiev, T. L.; Shukrinov, Yu. M.

    2005-10-01

    The transition from the model of a long Josephson junction of variable width to the model of a junction with a coordinate-dependent Josephson current amplitude is effected through a coordinate transformation. This establishes the correspondence between the classes of Josephson junctions of variable width and quasi-one-dimensional junctions with a variable thickness of the barrier layer. It is shown that for a junction of exponentially varying width the barrier layer of the equivalent quasi-one-dimensional junction has a distributed resistive inhomogeneity that acts as an attractor for magnetic flux vortices. The curve of the critical current versus magnetic field for a Josephson junction with a resistive microinhomogeneity is constructed with the aid of a numerical simulation, and a comparison is made with the critical curve of a junction of exponentially varying width. The possibility of replacing a distributed inhomogeneity in a Josephson junction by a local inhomogeneity at the end of the junction is thereby demonstrated; this can have certain advantages from a technological point of view.

  4. Laterally loaded masonry

    DEFF Research Database (Denmark)

    Raun Gottfredsen, F.

    In this thesis results from experiments on mortar joints and masonry as well as methods of calculation of strength and deformation of laterally loaded masonry are presented. The strength and deformation capacity of mortar joints have been determined from experiments involving a constant compressive...... stress and increasing shear. The results show a transition to pure friction as the cohesion is gradually destroyed. An interface model of a mortar joint that can take into account this aspect has been developed. Laterally loaded masonry panels have also been tested and it is found to be characteristic...

  5. Gap junction communication in myelinating glia.

    Science.gov (United States)

    Nualart-Marti, Anna; Solsona, Carles; Fields, R Douglas

    2013-01-01

    Gap junction communication is crucial for myelination and axonal survival in both the peripheral nervous system (PNS) and central nervous system (CNS). This review examines the different types of gap junctions in myelinating glia of the PNS and CNS (Schwann cells and oligodendrocytes respectively), including their functions and involvement in neurological disorders. Gap junctions mediate intercellular communication among Schwann cells in the PNS, and among oligodendrocytes and between oligodendrocytes and astrocytes in the CNS. Reflexive gap junctions mediating transfer between different regions of the same cell promote communication between cellular compartments of myelinating glia that are separated by layers of compact myelin. Gap junctions in myelinating glia regulate physiological processes such as cell growth, proliferation, calcium signaling, and participate in extracellular signaling via release of neurotransmitters from hemijunctions. In the CNS, gap junctions form a glial network between oligodendrocytes and astrocytes. This transcellular communication is hypothesized to maintain homeostasis by facilitating restoration of membrane potential after axonal activity via electrical coupling and the re-distribution of potassium ions released from axons. The generation of transgenic mice for different subsets of connexins has revealed the contribution of different connexins in gap junction formation and illuminated new subcellular mechanisms underlying demyelination and cognitive defects. Alterations in metabolic coupling have been reported in animal models of X-linked Charcot-Marie-Tooth disease (CMTX) and Pelizaeus-Merzbarcher-like disease (PMLD), which are caused by mutations in the genes encoding for connexin 32 and connexin 47 respectively. Future research identifying the expression and regulation of gap junctions in myelinating glia is likely to provide a better understanding of myelinating glia in nervous system function, plasticity, and disease. This

  6. Lateral Thinking of Prospective Teachers

    Science.gov (United States)

    Lawrence, A. S. Arul; Xavier, S. Amaladoss

    2013-01-01

    Edward de Bono who invented the term "lateral thinking" in 1967 is the pioneer of lateral thinking. Lateral thinking is concerned with the generation of new ideas. Liberation from old ideas and the stimulation of new ones are twin aspects of lateral thinking. Lateral thinking is a creative skills from which all people can benefit…

  7. The ^2H(e,e'p)n Reaction at High Four-Momentum Transfer

    Energy Technology Data Exchange (ETDEWEB)

    Hassan Ibrahim

    2006-12-31

    This dissertation presents the highest four-momentum transfer, Q^2,quasielastic (x_Bj = 1) results from Experiment E01-020 which systematically explored the 2He(e,e'p)n reaction ("Electro-disintegration" of the deuteron) at three different four-momentum transfers, Q^2 = 0.8, 2.1, and 3.5 GeV^2 and missing momenta, P_miss = 0, 100, 200, 300, 400, and 500 GeV including separations of the longitudinal-transverse interference response function, R_LT, and extractoin of the longitudinal-transverse asymmetry, A_LT. This systematic approach will help to understand the reaction mechanism and the deuteron structure down to the short range part of the nucleon-nucleon interaction which is one of the fundamental missions of nuclear physics. By studying the very short distance structure of the deuteron, one may also determine whether or to what extent the description of nuclei in terms of nucleon/meson degrees of freedom must be supplemented by inclusion of explicit quark effects. The unique combination of energy, current, duty factor, and control of systematics for Hall A at Jefferson Lab made Jefferson Lab the only facility in the world where these systematic studies of the deuteron can be undertaken. This is especially true when we want to understand the short range structure of the deuteron where high energies and high luminosity/duty factor are needed. All these features of Jefferson Lab allow us to examine large missing momenta (short range scales) at kinematics where the effects of final state interactions (FSI), meson exchange currents (MEC), and isobar currents (IC) are minimal, making the extraction of the deuteron structure less model-dependent. Jefferson Lab also provides the kinematical flexibility to perform the separation of R_LT over a broad range of missing momenta and momentum transfers. Experiment E01-020 use the standard Hall A equipment in coincidence configuration in addition to the cryogenic target system. The low and middle Q^2 kinematics were

  8. Fluxon dynamics in three stacked Josephson junctions

    DEFF Research Database (Denmark)

    Gorria, Carlos; Christiansen, Peter Leth; Gaididei, Yuri Borisovich

    2002-01-01

    /sub -/, the coupling between junctions leads to a repulsion of the fluxons with the same polarity. Above this critical velocity a fluxon will induce radiation in the neighboring junctions, leading to a bunching of the fluxons in the stacked junctions. Using the Sakai-Bodin-Pedersen model, three coupled perturbed sine......-Gordon equations are numerically studied for different values of coupling, damping, and bias parameters. In a narrow range of velocities bunching occurs. Outside this interval the fluxons split and new fluxons may be created. I-V characteristics are presented...

  9. Temperature dependence of thermopower in molecular junctions

    Science.gov (United States)

    Kim, Youngsang; Lenert, Andrej; Meyhofer, Edgar; Reddy, Pramod

    2016-07-01

    The thermoelectric properties of molecular junctions are of considerable interest due to their promise for efficient energy conversion. While the dependence of thermoelectric properties of junctions on molecular structure has been recently studied, their temperature dependence remains unexplored. Using a custom built variable temperature scanning tunneling microscope, we measured the thermopower and electrical conductance of individual benzenedithiol junctions over a range of temperatures (100 K-300 K). We find that while the electrical conductance is independent of temperature, the thermopower increases linearly with temperature, confirming the predictions of the Landauer theory.

  10. Phase qubits fabricated with trilayer junctions

    Energy Technology Data Exchange (ETDEWEB)

    Weides, M; Bialczak, R C; Lenander, M; Lucero, E; Mariantoni, Matteo; Neeley, M; O' Connell, A D; Sank, D; Wang, H; Wenner, J; Yamamoto, T; Yin, Y; Cleland, A N; Martinis, J, E-mail: martin.weides@nist.gov, E-mail: martinis@physics.ucsb.edu [Department of Physics, University of California, Santa Barbara, CA 93106 (United States)

    2011-05-15

    We have developed a novel Josephson junction geometry with minimal volume of lossy isolation dielectric, suitable for higher quality trilayer junctions implemented in qubits. The junctions are based on in situ deposited trilayers with thermal tunnel oxide, have micron-sized areas and a low subgap current. In qubit spectroscopy only a few avoided level crossings are observed, and the measured relaxation time of T{sub 1{approx}}400 ns is in good agreement with the usual phase qubit decay time, indicating low loss due to the additional isolation dielectric.

  11. The 2H(e, e' p)n reaction at large energy transfers

    Science.gov (United States)

    Willering, Hendrik Willem

    2003-04-01

    At the ELSA accelerator facillity in Bonn, Germany, we have measured the deutron breakup reaction 2H(e, e' p)n at four-momentum transfers around Q2 = -0 .20(GeV/c)2 with an electron beam energy of E0 = 1.6 GeV. The cross section has been determined for energy transfers extending from the quasielastic region to just below the Delta(1232)-resonance, and for proton polar angles up to Thetanp = 145 o in the center-of-momentum system. This angular range represents missing momenta up to pm = 1000 MeV/c. By detecting the scattered protons in two segmented 3 3 m2 scintillator time-of-flight detectors, we have covered a considerable part of the out-of-plane region. The clearly visible variation of the cross section with the proton azimuthal angle fnp has enabled us to extract values for the longitudinal-transverse interference form factor fLT and for a combination of the non-interference form factors fL and fT for proton angles up to Thetanp = 40o in the center-of-momentum system. The experimental results have been compared to the full model calculations by Arenhövel et al. For the major part of our kinematical range the shape of the cross section and of the form factors is reproduced by the model, but some differences remain in the normalization, especially at higher energy transfers. Our results corroborate the conclusions from other recent experiments concerning the importance of subnuclear degrees-of-freedom beyond the quasielastic region, but the discrepancy indicates that the model can still be improved

  12. Postoperative irradiation pN2 non-small cell lung cancer

    Energy Technology Data Exchange (ETDEWEB)

    Shimizu, Wakako [Japanese Foundation for Cancer Research, Tokyo (Japan). Hospital; Okumura, Toshiyuki; Onitsuka, Masataka; Ishikawa, Shigemi; Yamamoto, Tatsuo

    2001-02-01

    The efficacy of postoperative irradiation for pN2 non-small lung cancer was evaluated retrospectively. Between January 1993 and October 1998, 31 patients with pathologically proven N2 non-small cell lung cancer underwent postoperative radiotherapy. There were 23 men and 8 women (mean age 60.6 years). The histologic was squamous cell carcinoma in 8 patients and non-squamous cell carcinoma in 23. The mean interval between operation and irradiation was 30.1 days. The irradiated fields included the surgical margin, mediastinal and bilateral supraclavicular lymph nodes. In cases with negative surgical margins, the total dose was 46-50 Gy, administered in 23-28 fractions over 5-6 weeks. A boost irradiation was added to positive surgical margins with a dose of 10-14 Gy in 2 weeks. The mean follow-up period was 39.1 months. Three-year overall survival rate was 65.6%, three-year disease-free survival rate 40.7%, and three-year local control rate 77.3%. Twenty patients (87.0%) with non-squamous cell carcinoma had small primary lesions T1-2, while four patients (50.0%) with squamous cell carcinoma had advanced primary lesions T3-4. The three-year disease-free survival rate for squamous cell carcinoma was 100%, while that for non-squamous cell carcinoma was significantly lower at 35.1%. Postoperative irradiation may be effective for squamous cell carcinoma of the lung with pathological N2 status by improving local control. In adenocarcinoma, the benefit of postoperative irradiation is controversial. (author)

  13. The Drosophila genes crumbs and stardust are involved in the biogenesis of adherens junctions.

    Science.gov (United States)

    Grawe, F; Wodarz, A; Lee, B; Knust, E; Skaer, H

    1996-03-01

    Morphogenetic movements of epithelia during development underlie the normal elaboration of the final body plan. The tissue integrity critical for these movements is conferred by anchorage of the cytoskeleton by adherens junctions, initially spot and later belt-like, zonular structures, which encircle the apical side of the cell. Loss-of-function mutations in the Drosophila genes crumbs and stardust lead to the loss of cell polarity in most ectodermally derived epithelia, followed in some, such as the epidermis, by extensive apoptosis. Here we show that both mutants fail to establish proper zonulae adherentes in the epidermis. Our results suggest that the two genes are involved in different aspects of this process. Further, they are compatible with the hypothesis that crumbs delimits the apical border, where the zonula adherens usually forms and where Crumbs protein is normally most abundant. In contrast, stardust seems to be required at an earlier stage for the assembly of the spot adherence junctions. In both mutants, the defect observed at the ultrastructural level are preceded by a misdistribution of Armadillo and DE-cadherin, the homologues of beta-catenin and E-cadherin, respectively, which are two constituents of the vertebrate adherens junctions. Strikingly, expansion of the apical membrane domain in epidermal cells by overexpression of crumbs also abolishes the formation of adherens junctions and results in the disruption of tissue integrity, but without loss of membrane polarity. This result supports the view that membrane polarity is independent of the formation of adherens junctions in epidermal cells.

  14. Onset dominance in lateralization.

    Science.gov (United States)

    Freyman, R L; Zurek, P M; Balakrishnan, U; Chiang, Y C

    1997-03-01

    Saberi and Perrott [Acustica 81, 272-275 (1995)] found that the in-head lateralization of a relatively long-duration pulse train could be controlled by the interaural delay of the single pulse pair that occurs at onset. The present study examined this further, using an acoustic pointer measure of lateralization, with stimulus manipulations designed to determine conditions under which lateralization was consistent with the interaural onset delay. The present stimuli were wideband pulse trains, noise-burst trains, and inharmonic complexes, 250 ms in duration, chosen for the ease with which interaural delays and correlations of select temporal segments of the stimulus could be manipulated. The stimulus factors studied were the periodicity of the ongoing part of the signal as well as the multiplicity and ambiguity of interaural delays. The results, in general, showed that the interaural onset delay controlled lateralization when the steady state binaural cues were relatively weak, either because the spectral components were only sparsely distributed across frequency or because the interaural time delays were ambiguous. Onset dominance can be disrupted by sudden stimulus changes within the train, and several examples of such changes are described. Individual subjects showed strong left-right asymmetries in onset effectiveness. The results have implications for understanding how onset and ongoing interaural delay cues contribute to the location estimates formed by the binaural auditory system.

  15. Laterality and reproductive indices.

    Science.gov (United States)

    Kalichman, Leonid; Kobyliansky, Eugene

    2008-01-01

    Several previous studies support the association between manual dominance and age at menarche or age at menopause. The aim of the present study was to estimate the association between indices of laterality and reproductive indices. The studied sample comprised 650 Chuvashian women aged 18 to 80 years (mean, 46.9; SD = 16.2). The independent-sample t test was used to compare the age at menarche or age at menopause between individuals with right or left dominance of handedness, dominant eye, hand clasping, and arm folding. No significant differences in age at menarche or age at menopause between women with right and left dominance in any of the studied laterality indices were found. This is the first study that simultaneously evaluates the association between dominance in four laterality indices (handedness, dominant eye, hand clasping, and arm folding) and two reproductive indices (age at menarche and age at menopause). Result of our study do not support the hypothesis of a possible association between handedness (and other indices of laterality) and an early age at menarche or age at natural menopause.

  16. Increasing gap junctional coupling: a tool for dissecting the role of gap junctions.

    Science.gov (United States)

    Axelsen, Lene Nygaard; Haugan, Ketil; Stahlhut, Martin; Kjølbye, Anne-Louise; Hennan, James K; Holstein-Rathlou, Niels-Henrik; Petersen, Jørgen Søberg; Nielsen, Morten Schak

    2007-03-01

    Much of our current knowledge about the physiological and pathophysiological role of gap junctions is based on experiments where coupling has been reduced by either chemical agents or genetic modification. This has brought evidence that gap junctions are important in many physiological processes. In a number of cases, gap junctions have been implicated in the initiation and progress of disease, and experimental uncoupling has been used to investigate the exact role of coupling. The inverse approach, i.e., to increase coupling, has become possible in recent years and represents a new way of testing the role of gap junctions. The aim of this review is to summarize the current knowledge obtained with agents that selectively increase gap junctional intercellular coupling. Two approaches will be reviewed: increasing coupling by the use of antiarrhythmic peptide and its synthetic analogs and by interfering with the gating of gap junctional channels.

  17. Novel fully vertical GaN p-n diode on Si substrate grown by metalorganic chemical vapor deposition

    Science.gov (United States)

    Mase, Suguru; Urayama, Yuya; Hamada, Takeaki; Freedsman, Joseph J.; Egawa, Takashi

    2016-11-01

    We report novel GaN fully vertical p-n diode on Si grown by metalorganic chemical vapor deposition. The thick strained layer superlattice is effective in controlling a doping level of 1016 cm-3 in an n--GaN drift layer. The GaN p-n diode exhibits a differential on-resistance R on of 7.4 mΩ cm2, a turn-on voltage of 3.4 V, and a breakdown voltage V B of 288 V. The corresponding Baliga’s figure of merit (FOM) V\\text{B}2/R\\text{on} is 11.2 MW/cm2. A good FOM value for the GaN-on-Si vertical p-n diode is realized for a drift layer thickness of 1.5 µm without using substrate removal technology.

  18. The Aluminum-Free P-n-P InGaAsN Double Heterojunction Bipolar Transistors

    Energy Technology Data Exchange (ETDEWEB)

    CHANG,PING-CHIH; LI,N.Y.; BACA,ALBERT G.; MONIER,C.; LAROCHE,J.R.; HOU,H.Q.; REN,F.; PEARTON,S.J.

    2000-08-01

    The authors have demonstrated an aluminum-free P-n-P GaAs/InGaAsN/GaAs double heterojunction bipolar transistor (DHBT). The device has a low turn-on voltage (V{sub ON}) that is 0.27 V lower than in a comparable P-n-p AlGaAs/GaAs HBT. The device shows near-ideal D. C. characteristics with a current gain ({beta}) greater than 45. The high-speed performance of the device are comparable to a similar P-n-p AlGaAs/GaAs HBT, with f{sub T} and f{sub MAX} values of 12 GHz and 10 GHz, respectively. This device is very suitable for low-power complementary HBT circuit applications, while the aluminum-free emitter structure eliminates issues typically associated with AlGaAs.

  19. Improved photocatalytic activity of single crystal ZnO nanorod derived from highly effective P/N heterojunction

    Energy Technology Data Exchange (ETDEWEB)

    Yan, Xiaoyan, E-mail: yanxiaoyan0312@163.com [School of Materials Science and Engineering, Taiyuan University of Science and Technology, Taiyuan 030024 (China); Gong, Changwei, E-mail: cw_gong2008@yahoo.com.cn [School of Materials Science and Engineering, Taiyuan University of Science and Technology, Taiyuan 030024 (China); Wang, Jian; Liang, Liping [School of Materials Science and Engineering, Taiyuan University of Science and Technology, Taiyuan 030024 (China); Zhao, Li [School of Mechanical Engineering, Hubei University of Technology, Hubei 430068 (China); Zhang, Mingang; Chai, Yuesheng [School of Materials Science and Engineering, Taiyuan University of Science and Technology, Taiyuan 030024 (China)

    2013-10-15

    Graphical abstract: Schematic showing on photocatalytic degradation 2,4-DCP of ZnO NRs/BDD heterojunction. - Highlights: • Single-crystal ZnO nanorods based P/N heterojunction has been synthesized. • Vertical growth ZnO NRs on BDD can effectively photocatalytic decompose 2,4-DCP. • The rate constant of photocatalysis can be enhanced due to P/N heterojunction. - Abstract: Highly effective single-crystal ZnO nanorods based P/N heterojunction has been synthesized by a controllable crystal seed-induced hydrothermal vertical growth method, which facilitates the separation of the photogenerated electrons and holes due to its endogenous space charge region and suitable band structure. Therefore, photocatalytic activity for degradation of the toxic pollutants is markedly enhanced.

  20. Experimental Evidence for a Revision in the Annotation of Putative Pyridoxamine 5'-Phosphate Oxidases P(N/MP from Fungi.

    Directory of Open Access Journals (Sweden)

    Tatiana Domitrovic

    Full Text Available Pyridoxinamine 5'-phosphate oxidases (P(N/MP oxidases that bind flavin mononucleotide (FMN and oxidize pyridoxine 5'-phosphate or pyridoxamine 5'-phosphate to form pyridoxal 5'-phosphate (PLP are an important class of enzymes that play a central role in cell metabolism. Failure to generate an adequate supply of PLP is very detrimental to most organisms and is often clinically manifested as a neurological disorder in mammals. In this study, we analyzed the function of YLR456W and YPR172W, two homologous genes of unknown function from S. cerevisiae that have been annotated as putative P(N/MP oxidases based on sequence homology. Different experimental approaches indicated that neither protein catalyzes PLP formation nor binds FMN. On the other hand, our analysis confirmed the enzymatic activity of Pdx3, the S. cerevisiae protein previously implicated in PLP biosynthesis by genetic and structural characterization. After a careful sequence analysis comparing the putative and confirmed P(N/MP oxidases, we found that the protein domain (PF01243 that led to the YLR456W and YPR172W annotation is a poor indicator of P(N/MP oxidase activity. We suggest that a combination of two Pfam domains (PF01243 and PF10590 present in Pdx3 and other confirmed P(N/MP oxidases would be a stronger predictor of this molecular function. This work exemplifies the importance of experimental validation to rectify genome annotation and proposes a revision in the annotation of at least 400 sequences from a wide variety of fungal species that are homologous to YLR456W and are currently misrepresented as putative P(N/MP oxidases.

  1. Isomeric yield ratio for the [sup 95]Mo (p,n) [sup 95m,g]Tc reaction

    Energy Technology Data Exchange (ETDEWEB)

    Nagame, Y.; Baba, S. (Japan Atomic Energy Research Inst., Tokai-mura, Ibaraki (Japan). Dept. of Radioisotopes); Saito, T. (Osaka Univ., Toyonaka (Japan). Faculty of Science)

    1994-03-01

    Excitation functions and isomeric yield ratios for the [sup 95]Mo(p,n) (p,n) [sup 95m.g]Tc reactions up to E[sub p] = 28 MeV are analyzed with a statistical model. In the vicinity of the threshold energy E[sub p] [<=] 12 MeV, the experimental isomeric yield ratios are well reproduced by the calculations, while the calculation overestimates the experimental value beyond that energy. This suggests that the contribution of a pre-equilibrium process occurs above E[sub p] [approx] 12 MeV. The relationship between the isomeric yield ratio and compound nucleus spin distribution is discussed. (Author).

  2. Presynaptic spike broadening reduces junctional potential amplitude.

    Science.gov (United States)

    Spencer, A N; Przysiezniak, J; Acosta-Urquidi, J; Basarsky, T A

    1989-08-24

    Presynaptic modulation of action potential duration may regulate synaptic transmission in both vertebrates and invertebrates. Such synaptic plasticity is brought about by modifications to membrane currents at presynaptic release sites, which, in turn, lead to changes in the concentration of cytosolic calcium available for mediating transmitter release. The 'primitive' neuromuscular junction of the jellyfish Polyorchis penicillatus is a useful model of presynaptic modulation. In this study, we show that the durations of action potentials in the motor neurons of this jellyfish are negatively correlated with the amplitude of excitatory junctional potentials. We present data from in vitro voltage-clamp experiments showing that short duration voltage spikes, which elicit large excitatory junctional potentials in vivo, produce larger and briefer calcium currents than do long duration action potentials, which elicit small excitatory junctional potentials.

  3. Laparoscopically assisted pyeloplasty for ureteropelvic junction ...

    African Journals Online (AJOL)

    junction obstruction: a transperitoneal versus a retroperitoneal approach ... laparoscopic-assisted dismembered pyeloplasty (TLADP) ... to an open technique for two patients of the TLADP group; ... Annals of Pediatric Surgery 2012, 8:29–31.

  4. Androgen-Dependent Sertoli Cell Tight Junction Remodeling Is Mediated by Multiple Tight Junction Components

    National Research Council Canada - National Science Library

    Chakraborty, Papia; William Buaas, F; Sharma, Manju; Smith, Benjamin E; Greenlee, Anne R; Eacker, Stephen M; Braun, Robert E

    2014-01-01

    Sertoli cell tight junctions (SCTJs) of the seminiferous epithelium create a specialized microenvironment in the testis to aid differentiation of spermatocytes and spermatids from spermatogonial stem cells...

  5. Direct solar-to-hydrogen conversion via inverted metamorphic multi-junction semiconductor architectures

    Science.gov (United States)

    Young, James L.; Steiner, Myles A.; Döscher, Henning; France, Ryan M.; Turner, John A.; Deutsch, Todd G.

    2017-03-01

    Solar water splitting via multi-junction semiconductor photoelectrochemical cells provides direct conversion of solar energy to stored chemical energy as hydrogen bonds. Economical hydrogen production demands high conversion efficiency to reduce balance-of-systems costs. For sufficient photovoltage, water-splitting efficiency is proportional to the device photocurrent, which can be tuned by judicious selection and integration of optimal semiconductor bandgaps. Here, we demonstrate highly efficient, immersed water-splitting electrodes enabled by inverted metamorphic epitaxy and a transparent graded buffer that allows the bandgap of each junction to be independently varied. Voltage losses at the electrolyte interface are reduced by 0.55 V over traditional, uniformly p-doped photocathodes by using a buried p-n junction. Advanced on-sun benchmarking, spectrally corrected and validated with incident photon-to-current efficiency, yields over 16% solar-to-hydrogen efficiency with GaInP/GaInAs tandem absorbers, representing a 60% improvement over the classical, high-efficiency tandem III-V device.

  6. Direct solar-to-hydrogen conversion via inverted metamorphic multi-junction semiconductor architectures

    Energy Technology Data Exchange (ETDEWEB)

    Young, James L.; Steiner, Myles A.; Döscher, Henning; France, Ryan M.; Turner, John A.; Deutsch, Todd G.

    2017-03-13

    Solar water splitting via multi-junction semiconductor photoelectrochemical cells provides direct conversion of solar energy to stored chemical energy as hydrogen bonds. Economical hydrogen production demands high conversion efficiency to reduce balance-of-systems costs. For sufficient photovoltage, water-splitting efficiency is proportional to the device photocurrent, which can be tuned by judicious selection and integration of optimal semiconductor bandgaps. Here, we demonstrate highly efficient, immersed water-splitting electrodes enabled by inverted metamorphic epitaxy and a transparent graded buffer that allows the bandgap of each junction to be independently varied. Voltage losses at the electrolyte interface are reduced by 0.55 V over traditional, uniformly p-doped photocathodes by using a buried p-n junction. Advanced on-sun benchmarking, spectrally corrected and validated with incident photon-to-current efficiency, yields over 16% solar-to-hydrogen efficiency with GaInP/GaInAs tandem absorbers, representing a 60% improvement over the classical, high-efficiency tandem III-V device.

  7. Dual-channel current valve in a three terminal zigzag graphene nanoribbon junction

    Science.gov (United States)

    Zhang, L.

    2017-02-01

    We theoretically propose a dual-channel current valve based on a three terminal zigzag graphene nanoribbon (ZGNR) junction driven by three asymmetric time-dependent pumping potentials. By means of the Keldysh Green’s function method, we show that two asymmetric charge currents can be pumped in the different left-right terminals of the device at a zero bias, which mainly stems from the single photon-assisted pumping approximation and the valley valve effect in a ZGNR p-n junction. The ON and OFF states of pumped charge currents are crucially dependent on the even-odd chain widths of the three electrodes, the pumping frequency, the lattice potential and the Fermi level. Two-tunneling spin valves are also considered to spatially separate and detect 100% polarized spin currents owing to the combined spin pump effect and the valley selective transport in a three terminal ZGNR ferromagnetic junction. Our investigations might be helpful to control the spatial and spin degrees of freedom of electrons in graphene pumping devices.

  8. Junction Plasmon-Induced Molecular Reorientation

    Energy Technology Data Exchange (ETDEWEB)

    El-Khoury, Patrick Z.; Hu, Dehong; Hess, Wayne P.

    2013-10-17

    Time and frequency dependent intensity variations in sequences of Raman spectra recorded at plasmonic junctions can be assigned to molecular reorientation. This is revealed through Raman trajectories recorded at a nanojunction formed between a silver AFM tip and a corrugated silver surface coated with biphenyl-4,4’-dithiol. Molecular motion is not observed when the tip is retracted and only surface enhancement is operative. In effect, junction plasmon induced molecular reorientation is tracked.

  9. [Clinical anatomy of the esophagogastric junction].

    Science.gov (United States)

    Tănase, M; Aldea, A S

    2012-01-01

    The esophagogastric junction is a controversial anatomical area, due to its sphincteric mechanism which does not show an obvious anatomical basis. The aim of this study is to investigate the anatomical components that endoscopically indicate the mucosal esophagogastric junction in hiatal hernia patients. The esophagogastric junction was investigated in 27 hiatal hernia patients undergoing surgery. Hiatal hernia is an extension of the stomach situated between the esophagogastric junction and the diaphragmatic indentation. The following types of hiatal hernia were found: sliding hiatal hernia (type I) in 4 patients (14.81%), rolling hiatal hernia (type II) in 2 (7.4%), mixed hiatal hernia (type III) in 12 (44.44%), type IV hiatal hernia in 4 (14.81%) and recurrent hiatal hernia in 5 (18.51%). Of the 27 hiatal hernia patients, 8 (29.6%) were operated using classical procedures: laparotomy--6 (75%) and laparoscopic surgery--2 (25%). The angle of His cannot be used for marking the mucosal esophagogastric junction due to the severe damage of the lower esophageal sphincter in hiatal hernia patients. The squamocolumnar junction is displaced in hiatal hernia patients and was not an option for the study group. The distal end of the esophageal longitudinal palisading vessels needs medication (proton pump inhibitors that reduce the gastric acid production), in order to enhance the visibility of these vessels. The proximal end of gastric longitudinal mucosal folds proved to be the most reliable site to identify endoscopically the mucosal esophagogastric junction. The anatomical structure of the esophagogastric junction differs in hiatal hernia patients and these peculiarities are very important in surgery.

  10. The Dissolution of Double Holliday Junctions

    DEFF Research Database (Denmark)

    Bizard, Anna H; Hickson, Ian D

    2014-01-01

    as "double Holliday junction dissolution." This reaction requires the cooperative action of a so-called "dissolvasome" comprising a Holliday junction branch migration enzyme (Sgs1/BLM RecQ helicase) and a type IA topoisomerase (Top3/TopoIIIα) in complex with its OB (oligonucleotide/oligosaccharide binding......) fold containing accessory factor (Rmi1). This review details our current knowledge of the dissolution process and the players involved in catalyzing this mechanistically complex means of completing homologous recombination reactions....

  11. Highly Efficient Photocurrent Generation from Nanocrystalline Graphene-Molybdenum Disulfide Lateral Interfaces.

    Science.gov (United States)

    Lee, Kang Hyuck; Kim, Tae-Ho; Shin, Hyun-Jin; Kim, Sang-Woo

    2016-03-02

    Nanocrystalline graphene-MoS2 lateral interfaces reveal distinct current-rectified characteristics, similar to a p-n diode, that are seldom observed for the monolayer graphene-MoS2 vertical interface. It is found that the lateral interfaces can increase the Schottky barrier between the graphene and the MoS2 because the metallic MoS2 edges cause charge reordering and a potential shift in the graphene.

  12. Neural progenitor cells isolated from the subventricular zone present hemichannel activity and form functional gap junctions with glial cells

    Directory of Open Access Journals (Sweden)

    Rocío eTalaverón

    2015-10-01

    Full Text Available The postnatal subventricular zone lining the walls of the lateral ventricles contains neural progenitor cells (NPCs that generate new olfactory bulb interneurons. Communication via gap junctions between cells in the subventricular zone is involved in NPC proliferation and in neuroblast migration towards the olfactory bulb. Subventricular zone NPCs can be expanded in vitro in the form of neurospheres that can be used for transplantation purposes after brain injury. We have previously reported that neurosphere-derived NPCs form heterocellular gap junctions with host glial cells when they are implanted after mechanical injury. To analyze functionality of NPC-glial cell gap junctions we performed dye coupling experiments in co-cultures of subventricular zone NPCs with astrocytes or microglia. Neurosphere-derived cells expressed mRNA for at least the hemichannel/gap junction channel proteins connexin 26 (Cx26, Cx43, Cx45 and pannexin 1. Dye coupling experiments revealed that gap junctional communication occurred among neurosphere cells (incidence of coupling: 100%. Moreover, hemichannel activity was also detected in neurosphere cells as evaluated in time-lapse measurements of ethidium bromide uptake. Heterocellular coupling between NPCs and glial cells was evidenced in co-cultures of neurospheres with astrocytes (incidence of coupling: 91.0 ± 4.7% or with microglia (incidence of coupling: 71.9 ± 6.7%. Dye coupling in neurospheres and in co-cultures was inhibited by octanol, a gap junction blocker. Altogether, these results suggest the existence of functional hemichannels and gap junction channels in postnatal subventricular zone neurospheres. In addition, they demonstrate that subventricular zone-derived NPCs can establish functional gap junctions with astrocytes or microglia. Therefore, cell-cell communication via gap junctions and hemichannels with host glial cells might subserve a role in the functional integration of NPCs after implantation in

  13. Neural progenitor cells isolated from the subventricular zone present hemichannel activity and form functional gap junctions with glial cells.

    Science.gov (United States)

    Talaverón, Rocío; Fernández, Paola; Escamilla, Rosalba; Pastor, Angel M; Matarredona, Esperanza R; Sáez, Juan C

    2015-01-01

    The postnatal subventricular zone (SVZ) lining the walls of the lateral ventricles contains neural progenitor cells (NPCs) that generate new olfactory bulb interneurons. Communication via gap junctions between cells in the SVZ is involved in NPC proliferation and in neuroblast migration towards the olfactory bulb. SVZ NPCs can be expanded in vitro in the form of neurospheres that can be used for transplantation purposes after brain injury. We have previously reported that neurosphere-derived NPCs form heterocellular gap junctions with host glial cells when they are implanted after mechanical injury. To analyze functionality of NPC-glial cell gap junctions we performed dye coupling experiments in co-cultures of SVZ NPCs with astrocytes or microglia. Neurosphere-derived cells expressed mRNA for at least the hemichannel/gap junction channel proteins connexin 26 (Cx26), Cx43, Cx45 and pannexin 1 (Panx1). Dye coupling experiments revealed that gap junctional communication occurred among neurosphere cells (incidence of coupling: 100%). Moreover, hemichannel activity was also detected in neurosphere cells as evaluated in time-lapse measurements of ethidium bromide uptake. Heterocellular coupling between NPCs and glial cells was evidenced in co-cultures of neurospheres with astrocytes (incidence of coupling: 91.0 ± 4.7%) or with microglia (incidence of coupling: 71.9 ± 6.7%). Dye coupling in neurospheres and in co-cultures was inhibited by octanol, a gap junction blocker. Altogether, these results suggest the existence of functional hemichannels and gap junction channels in postnatal SVZ neurospheres. In addition, they demonstrate that SVZ-derived NPCs can establish functional gap junctions with astrocytes or microglia. Therefore, cell-cell communication via gap junctions and hemichannels with host glial cells might subserve a role in the functional integration of NPCs after implantation in the damaged brain.

  14. Neural progenitor cells isolated from the subventricular zone present hemichannel activity and form functional gap junctions with glial cells

    Science.gov (United States)

    Talaverón, Rocío; Fernández, Paola; Escamilla, Rosalba; Pastor, Angel M.; Matarredona, Esperanza R.; Sáez, Juan C.

    2015-01-01

    The postnatal subventricular zone (SVZ) lining the walls of the lateral ventricles contains neural progenitor cells (NPCs) that generate new olfactory bulb interneurons. Communication via gap junctions between cells in the SVZ is involved in NPC proliferation and in neuroblast migration towards the olfactory bulb. SVZ NPCs can be expanded in vitro in the form of neurospheres that can be used for transplantation purposes after brain injury. We have previously reported that neurosphere-derived NPCs form heterocellular gap junctions with host glial cells when they are implanted after mechanical injury. To analyze functionality of NPC-glial cell gap junctions we performed dye coupling experiments in co-cultures of SVZ NPCs with astrocytes or microglia. Neurosphere-derived cells expressed mRNA for at least the hemichannel/gap junction channel proteins connexin 26 (Cx26), Cx43, Cx45 and pannexin 1 (Panx1). Dye coupling experiments revealed that gap junctional communication occurred among neurosphere cells (incidence of coupling: 100%). Moreover, hemichannel activity was also detected in neurosphere cells as evaluated in time-lapse measurements of ethidium bromide uptake. Heterocellular coupling between NPCs and glial cells was evidenced in co-cultures of neurospheres with astrocytes (incidence of coupling: 91.0 ± 4.7%) or with microglia (incidence of coupling: 71.9 ± 6.7%). Dye coupling in neurospheres and in co-cultures was inhibited by octanol, a gap junction blocker. Altogether, these results suggest the existence of functional hemichannels and gap junction channels in postnatal SVZ neurospheres. In addition, they demonstrate that SVZ-derived NPCs can establish functional gap junctions with astrocytes or microglia. Therefore, cell-cell communication via gap junctions and hemichannels with host glial cells might subserve a role in the functional integration of NPCs after implantation in the damaged brain. PMID:26528139

  15. Lateral information processing by spiking neurons: a theoretical model of the neural correlate of consciousness.

    Science.gov (United States)

    Ebner, Marc; Hameroff, Stuart

    2011-01-01

    Cognitive brain functions, for example, sensory perception, motor control and learning, are understood as computation by axonal-dendritic chemical synapses in networks of integrate-and-fire neurons. Cognitive brain functions may occur either consciously or nonconsciously (on "autopilot"). Conscious cognition is marked by gamma synchrony EEG, mediated largely by dendritic-dendritic gap junctions, sideways connections in input/integration layers. Gap-junction-connected neurons define a sub-network within a larger neural network. A theoretical model (the "conscious pilot") suggests that as gap junctions open and close, a gamma-synchronized subnetwork, or zone moves through the brain as an executive agent, converting nonconscious "auto-pilot" cognition to consciousness, and enhancing computation by coherent processing and collective integration. In this study we implemented sideways "gap junctions" in a single-layer artificial neural network to perform figure/ground separation. The set of neurons connected through gap junctions form a reconfigurable resistive grid or sub-network zone. In the model, outgoing spikes are temporally integrated and spatially averaged using the fixed resistive grid set up by neurons of similar function which are connected through gap-junctions. This spatial average, essentially a feedback signal from the neuron's output, determines whether particular gap junctions between neurons will open or close. Neurons connected through open gap junctions synchronize their output spikes. We have tested our gap-junction-defined sub-network in a one-layer neural network on artificial retinal inputs using real-world images. Our system is able to perform figure/ground separation where the laterally connected sub-network of neurons represents a perceived object. Even though we only show results for visual stimuli, our approach should generalize to other modalities. The system demonstrates a moving sub-network zone of synchrony, within which the contents of

  16. Gap junction intercellular communication and benzene toxicity.

    Science.gov (United States)

    Rivedal, Edgar; Witz, Gisela; Leithe, Edward

    2010-03-19

    Aberrant regulation of gap junction intercellular communication (GJIC) has been linked to several human diseases, including cancer and abnormal hematopoietic development. Benzene exposure has been shown to cause hematotoxicity and leukemia, but the underlying mechanisms involved remain unclear. We have observed that several metabolites of benzene have the ability to block gap junction intercellular communication. The ring-opened trans,trans-muconaldehyde (MUC) was found to be the most potent inhibitor of gap junction channels. MUC was found to induce cross-linking of the gap junction protein connexin43, which seemed to be responsible for the induced inhibition of GJIC. Glutaraldehyde, which has a similar molecular structure as MUC, was found to possess similar effects on gap junctions as MUC, while the mono-aldehyde formaldehyde shows lower potency, both as a connexin cross-linker, and as an inhibitor of GJIC. Both glutaraldehyde and formaldehyde have previously been associated with induction of leukemia and disturbance of hematopoiesis. Taken together, the data support a possible link between the effect of MUC on gap junctions, and the toxic effects of benzene. Copyright (c) 2009 Elsevier Ireland Ltd. All rights reserved.

  17. Gap junctions: structure and function (Review).

    Science.gov (United States)

    Evans, W Howard; Martin, Patricia E M

    2002-01-01

    Gap junctions are plasma membrane spatial microdomains constructed of assemblies of channel proteins called connexins in vertebrates and innexins in invertebrates. The channels provide direct intercellular communication pathways allowing rapid exchange of ions and metabolites up to approximately 1 kD in size. Approximately 20 connexins are identified in the human or mouse genome, and orthologues are increasingly characterized in other vertebrates. Most cell types express multiple connexin isoforms, making likely the construction of a spectrum of heteromeric hemichannels and heterotypic gap junctions that could provide a structural basis for the charge and size selectivity of these intercellular channels. The precise nature of the potential signalling information traversing junctions in physiologically defined situations remains elusive, but extensive progress has been made in elucidating how connexins are assembled into gap junctions. Also, participation of gap junction hemichannels in the propagation of calcium waves via an extracellular purinergic pathway is emerging. Connexin mutations have been identified in a number of genetically inherited channel communication-opathies. These are detected in connexin 32 in Charcot Marie Tooth-X linked disease, in connexins 26 and 30 in deafness and skin diseases, and in connexins 46 and 50 in hereditary cataracts. Biochemical approaches indicate that many of the mutated connexins are mistargeted to gap junctions and/or fail to oligomerize correctly into hemichannels. Genetic ablation approaches are helping to map out a connexin code and point to specific connexins being required for cell growth and differentiation as well as underwriting basic intercellular communication.

  18. Predictive modelling of ferroelectric tunnel junctions

    Science.gov (United States)

    Velev, Julian P.; Burton, John D.; Zhuravlev, Mikhail Ye; Tsymbal, Evgeny Y.

    2016-05-01

    Ferroelectric tunnel junctions combine the phenomena of quantum-mechanical tunnelling and switchable spontaneous polarisation of a nanometre-thick ferroelectric film into novel device functionality. Switching the ferroelectric barrier polarisation direction produces a sizable change in resistance of the junction—a phenomenon known as the tunnelling electroresistance effect. From a fundamental perspective, ferroelectric tunnel junctions and their version with ferromagnetic electrodes, i.e., multiferroic tunnel junctions, are testbeds for studying the underlying mechanisms of tunnelling electroresistance as well as the interplay between electric and magnetic degrees of freedom and their effect on transport. From a practical perspective, ferroelectric tunnel junctions hold promise for disruptive device applications. In a very short time, they have traversed the path from basic model predictions to prototypes for novel non-volatile ferroelectric random access memories with non-destructive readout. This remarkable progress is to a large extent driven by a productive cycle of predictive modelling and innovative experimental effort. In this review article, we outline the development of the ferroelectric tunnel junction concept and the role of theoretical modelling in guiding experimental work. We discuss a wide range of physical phenomena that control the functional properties of ferroelectric tunnel junctions and summarise the state-of-the-art achievements in the field.

  19. Lateral Attitude Change.

    Science.gov (United States)

    Glaser, Tina; Dickel, Nina; Liersch, Benjamin; Rees, Jonas; Süssenbach, Philipp; Bohner, Gerd

    2015-08-01

    The authors propose a framework distinguishing two types of lateral attitude change (LAC): (a) generalization effects, where attitude change toward a focal object transfers to related objects, and (b) displacement effects, where only related attitudes change but the focal attitude does not change. They bring together examples of LAC from various domains of research, outline the conditions and underlying processes of each type of LAC, and develop a theoretical framework that enables researchers to study LAC more systematically in the future. Compared with established theories of attitude change, the LAC framework focuses on lateral instead of focal attitude change and encompasses both generalization and displacement. Novel predictions and designs for studying LAC are presented.

  20. Treatment of lateral epicondylitis.

    Science.gov (United States)

    Johnson, Greg W; Cadwallader, Kara; Scheffel, Scot B; Epperly, Ted D

    2007-09-15

    Lateral epicondylitis is a common overuse syndrome of the extensor tendons of the forearm. It is sometimes called tennis elbow, although it can occur with many activities. The condition affects men and women equally and is more common in persons 40 years or older. Despite the prevalence of lateral epicondylitis and the numerous treatment strategies available, relatively few high-quality clinical trials support many of these treatment options; watchful waiting is a reasonable option. Topical nonsteroidal anti-inflammatory drugs, corticosteroid injections, ultrasonography, and iontophoresis with nonsteroidal anti-inflammatory drugs appear to provide short-term benefits. Use of an inelastic, nonarticular, proximal forearm strap (tennis elbow brace) may improve function during daily activities. Progressive resistance exercises may confer modest intermediate-term results. Evidence is mixed on oral nonsteroidal antiinflammatory drugs, mobilization, and acupuncture. Patients with refractory symptoms may benefit from surgical intervention. Extracorporeal shock wave therapy, laser treatment, and electromagnetic field therapy do not appear to be effective.

  1. [Lateral lumbar disk herniation].

    Science.gov (United States)

    Deburge, A; Barre, E; Guigui, P

    A retrospective study of 41 lateral discal hernias observed between 1984 and 1991 were studied among the 1080 discal hernias treated during this period. CT scan, performed in all cases, distinguished several different types of hernia: foramen hernias (26), extraforamen hernias (12), mixed forms (5) associated with canal component (11). Thirteen disco scans were required. Nucleolysis was performed in 24 patients (58%) and surgical treatment was the first intention choice in 17 (41%). Outcome, evaluated with a function score developed in the unit were good in the 17 surgery cases (100%). In the nucleolysis patients results were good or excellent in 13, average in 4, and poor in 7. Five of the nucleolysis failures were later operated leading to good results in 3, average in 1 and no change in 1. Indications for surgery are more frequent in this type of discal hernia and results in our surgical series were better than those for chemonucleolysis.

  2. Craniocervical junction diseases treatment with a minimally invasive approach

    Directory of Open Access Journals (Sweden)

    Roberto Carlos Díaz

    2014-01-01

    Full Text Available Objective: To introduce a new minimally invasive surgical approach to anterior and lateral craniocervical junction diseases, preserving the midline posterior cervical spine stabilizing elements and reducing the inherent morbidity risk associated with traditional approaches. Methods: We describe a novel surgical technique in four cases of extra-medullary anterolateral compressive lesions located in the occipito-cervical junction, including infections and intra- and/or extradural tumor lesions. We used a paramedian trasmuscular approach through an anatomical muscle corridor using a micro MaXcess(r surgical expandable retractor, with the purpose of reducing morbidity and preserving the posterior muscle and ligamentous tension band. Results: This type of surgical approach provides adequate visualization and microsurgical resection of lesions and reduces muscle manipulation and devascularisation, preserving the tension of the ligament complex. There was minimal blood loss and a decrease in postoperative pain, with rapid start of rehabilitation and shorter hospitalization times. There were no intraoperative complications, and all patients recovered from their pre-operative symptoms. Conclusions: This novel surgical technique is feasible and adequate for the occipito-atlanto-axial complex, with better results than traditional procedures.

  3. The lateral angle revisited

    DEFF Research Database (Denmark)

    Morgan, Jeannie; Lynnerup, Niels; Hoppa, R.D.

    2013-01-01

    measurements taken from computed tomography (CT) scans. Previous reports have observed that the lateral angle size in females is significantly larger than in males. The method was applied to an independent series of 77 postmortem CT scans (42 males, 35 females) to validate its accuracy and reliability...... method appears to be of minimal practical use in forensic anthropology and archeology. © 2013 American Academy of Forensic Sciences....

  4. Lateral Elbow Tendinopathy

    Science.gov (United States)

    Bhabra, Gev; Wang, Allan; Ebert, Jay R.; Edwards, Peter; Zheng, Monica; Zheng, Ming H.

    2016-01-01

    Lateral elbow tendinopathy, commonly known as tennis elbow, is a condition that can cause significant functional impairment in working-age patients. The term tendinopathy is used to describe chronic overuse tendon disorders encompassing a group of pathologies, a spectrum of disease. This review details the pathophysiology of tendinopathy and tendon healing as an introduction for a system grading the severity of tendinopathy, with each of the 4 grades displaying distinct histopathological features. Currently, there are a large number of nonoperative treatments available for lateral elbow tendinopathy, with little guidance as to when and how to use them. In fact, an appraisal of the clinical trials, systematic reviews, and meta-analyses studying these treatment modalities reveals that no single treatment reliably achieves outstanding results. This may be due in part to the majority of clinical studies to date including all patients with chronic tendinopathy rather than attempting to categorize patients according to the severity of disease. We relate the pathophysiology of the different grades of tendinopathy to the basic science principles that underpin the mechanisms of action of the nonoperative treatments available to propose a treatment algorithm guiding the management of lateral elbow tendinopathy depending on severity. We believe that this system will be useful both in clinical practice and for the future investigation of the efficacy of treatments. PMID:27833925

  5. Analysis of factors influencing skip lymphatic metastasis in pN2 non-small cell lung cancer

    Institute of Scientific and Technical Information of China (English)

    Gui-Long Li; Yong Zhu; Wei Zheng; Chao-Hui Guo; Chun Chen

    2012-01-01

    Objective:Although many clinical studies on skip lymphatic metastasis in non-small cell lung cancer have been reported,the risk factors for skip lymphatic metastasis are still controversy and debatable.This study investigated,by multivariate logistic regression analysis,the clinical features of skip metastasis to mediastinal lymph nodes (N2) in non-small cell lung cancer (NSCLC) patients.Methods:We collected the clinicopathological data of 256 pN2-NSCLC patients who underwent lobectomy plus systemic lymph node dissection in Fujian Medical University Union Hospital.The cases in the present study were divided into two groups:skip metastasis (N2 skip+) and non-skip metastasis (N2 skip-).A retrospective analysis of clinical pathological features of two groups was performed.To determine an independent factor,multivariate logistic regression analysis was used to identify possible risk factors.Results:A total of 256 pN2-NSCLC patients were recruited.The analysis results showed that gender,pathologic types,surgery,pleural involvement,smoking history,age,tumor stages,and differentiation were not statistical significant factors impacting on skip metastasis in pN2-NSCLC (P>0.05),whereas tumor size was an independent factor for skip metastasis (P=0.02).Conclusions:The rate of skip lymphatic metastasis increases in pN2-NSCLC patients,in accompany with an increased tumor size.

  6. Development of a benzimidazole-derived bidentate P,N-ligand for enantioselective iridium-catalyzed hydrogenations

    NARCIS (Netherlands)

    Weemers, Jarno J M; Sypaseuth, Fanni D.; Bäuerlein, Patrick S.; Van Der Graaff, William N P; Filot, Ivo A W; Lutz, Martin|info:eu-repo/dai/nl/304828971; Müller, Christian

    2014-01-01

    The development of a novel benzimidazole-derived bidentate P,N-ligand and its application in Ir-catalyzed hydrogenation is described. The ligand backbone was obtained through a one-pot tandem hydroformylation-cyclization sequence and the enantiomers of the generated alcohol were separated by chiral

  7. Surface runoff from manured cropping systems assessed by the paired-watershed method, part 1: P, N, and sediment transport

    Science.gov (United States)

    Transport of P, N, and sediment via runoff from crop fields can contribute to degradation of surface waters. We established a paired-watershed study in central Wisconsin to evaluate surface runoff losses of nutrients, sediment, and pathogens from different manure/crop/tillage management systems for ...

  8. Twisted $\\mathbb{C}P^{N-1}$ instanton projectors and the $N$-level quantum density matrix

    CERN Document Server

    Shermer, Scott

    2014-01-01

    Twisted classical solutions to the $\\mathbb{C}P^{N-1}$ model play a key role in the analysis of such models on the spatially compactified cylinder $\\mathbb{S}_L^1 \\times {\\mathbb{R}^1}$ and have recently been shown to be important for the resurgent structure of this quantum field theory. Instantons and non-self-dual solutions both fractionalize, and domain walls formed by such topological solutions can be associated with $N$-vacua having maximally repulsive energy eigenvalues. The purpose of this paper is to reinforce this view through the investigation of a number of parallels between the $\\mathbb{C}P^{N-1}$ model and $N$-level quantum mechanical density matrices. Specifically, we demonstrate the existence of a time-evolution equation for the $\\mathbb{C}P^{N-1}$ instanton projector analogous to the Liouville-von Neumann equation in the quantum mechanical formalism. The group theoretical analysis of density matrices and the $\\mathbb{C}P^{N-1}$ model are also closely related. Finally, we explore the emergence ...

  9. Charge transport in nanoscale junctions.

    Science.gov (United States)

    Albrecht, Tim; Kornyshev, Alexei; Bjørnholm, Thomas

    2008-09-03

    many particle excitations, new surface states in semiconductor electrodes, various mechanisms for single molecule rectification of the current, inelastic electron spectra and SERS spectroscopy. Three terminal architectures allowing (electrochemical) gating and transistor effects. Electrochemical nanojunctions and gating: intermolecular electron transfer in multi-redox metalloproteins, contact force modulation, characteristic current-noise patterns due to conformational fluctuations, resonance effects and electrocatalysis. Novel architectures: linear coupled quantum-dot-bridged junctions, electrochemical redox mediated transfer in two center systems leading to double maxima current-voltage plots and negative differential resistance, molecular-nanoparticle hybrid junctions and unexpected mesoscopic effects in polymeric wires. Device integration: techniques for creating stable metal/molecule/metal junctions using 'nano-alligator clips' and integration with 'traditional' silicon-based technology. The Guest Editors would like to thank all of the authors and referees of this special issue for their meticulous work in making each paper a valuable contribution to this research area, the early-bird authors for their patience, and Journal of Physics: Condensed Matter editorial staff in Bristol for their continuous support.

  10. Claudin-5 is restricted to the tight junction region of uterine epithelial cells in the uterus of pregnant/gravid squamate reptiles.

    Science.gov (United States)

    Biazik, Joanna M; Thompson, Michael B; Murphy, Christopher R

    2008-05-01

    Claudin-5, a tight junctional protein associated with ion and size selectivity, has been found in the uterus of skinks. This study has generated critical information about the molecular assembly of the tight junction at various stages of the reproductive cycle in the skink uterus. Recent studies looking at tight junctional proteins found occludin expression in the tight junction region of uterine epithelial cells in the skink uterus; however, occludin did not disclose any further information about the ions and size of ions permeating across the paracellular pathway. A approximately 22-kDa claudin-5 band was detected in the uterus of the skinks present in this study and immunohistochemistry revealed that claudin-5 redistributes to the tight junction region of the lateral plasma membrane of uterine epithelial cells in late stage pregnancy/gravidity. This finding indicates that the tight junction becomes more assembled to precisely regulate ion and solute permeation in late stage pregnancy/gravidity. Claudin-5 with its functional role as a molecular sieve due to the formation of ion and size selective pores suggests that permeation of ions smaller than 0.8 kDa are restricted when claudin-5 is redistributed to the tight junction region of the later plasma membrane. This report is the first description of the molecular mechanisms that may be involved in regulating nutrient provision in the reptilian uterus.

  11. Active Forearc Response to CO-NZ-CA Triple Junction Migration, Southern Central America

    Science.gov (United States)

    Morell, K.; Fisher, D.; Gardner, T. W.

    2007-12-01

    Southeast migration of the CO-NZ-CA triple junction at a rate of ~55 mm/yr results in an abrupt increase in convergence rate, slab thickness and subduction direction within the upper plate of the Central American convergent margin. At the triple junction, an active transform fault (the dextral Panama Fracture Zone) subducts beneath the Caribbean plate at the Middle America Trench, and juxtaposes the thick, orthogonal and shallow subduction of the Cocos plate against the thin, oblique and steeper subduction of the Nazca plate. New bedrock geology, Quaternary mapping and Ar/Ar dates of fluvial and volcanic deposits inboard of the triple junction provide evidence that both the outer and inner forearc of this system is actively responding to the dynamic changes presented by triple junction migration. Our results confirm that the Fila Costeña, a thin-skinned inner forearc thrust belt, is active and likely propagating in concert with triple junction migration. Mapping within the area overriding the Panama Fracture Zone indicates that thrusting develops only in those areas experiencing Cocos subduction; the thrust belt dies out coincident with the on-shore projection of the Panama Fracture Zone, and balanced cross-sections indicate a lateral gradient in the amount of shortening near the termination of the thrust belt. Along-strike variations in drainage basin morphometry suggest that drainage divides of the Fila Costeña are propagating to the southeast with the triple junction, resulting in hook-shaped drainage patterns and asymmetric basin shapes. A survey of a flight of 3-4 fluvial terraces along the Río Chiriquí Viejo indicates recent thrusting along a prominent thrust fault of the Fila Costeña. These terraces are also inset into multiple lahar flows with an upper surface tentatively constrained at ~507 ka based on an Ar/Ar hornblende plateau age. Recent work indicates that this thrust fault displaces surficial lahar deposits, suggesting that it must have become

  12. Josephson tunnel junctions with ferromagnetic interlayer

    Energy Technology Data Exchange (ETDEWEB)

    Weides, M.P.

    2006-07-01

    Superconductivity and ferromagnetism are well-known physical properties of solid states that have been widely studied and long thought about as antagonistic phenomena due to difference in spin ordering. It turns out that the combination of both superconductor and ferromagnet leads to a very rich and interesting physics. One particular example, the phase oscillations of the superconducting order parameter inside the ferromagnet, will play a major role for the devices discussed in this work. In this thesis, I present Josephson junctions with a thin Al{sub 2}O{sub 3} tunnel barrier and a ferromagnetic interlayer, i.e. superconductor-insulator-ferromagnet-superconductor (SIFS) stacks. The fabrication of junctions was optimized regarding the insulation of electrodes and the homogeneity of the current transport. The junctions were either in the 0 or {pi} coupled ground state, depending on the thickness of the ferromagnetic layer and on temperature. The influence of ferromagnetic layer thickness on the transport properties and the coupling (0, {pi}) of SIFS tunnel junctions was studied. Furthermore, using a stepped ferromagnetic layer with well-chosen thicknesses, I obtained the so-called 0-{pi} Josephson junction. At a certain temperature this 0-{pi} junction can be made perfectly symmetric. In this case the ground state corresponds to a vortex of supercurrent creating a magnetic flux which is a fraction of the magnetic flux quantum {phi}{sub 0}. Such structures allow to study the physics of fractional vortices and to build various electronic circuits based on them. The SIFS junctions presented here have an exponentially vanishing damping at T {yields} 0. The SIFS technology developed within the framework of this work may be used to construct classical and quantum devices such as oscillators, memory cells and qubits. (orig.)

  13. Model Building to Facilitate Understanding of Holliday Junction and Heteroduplex Formation, and Holliday Junction Resolution

    Science.gov (United States)

    Selvarajah, Geeta; Selvarajah, Susila

    2016-01-01

    Students frequently expressed difficulty in understanding the molecular mechanisms involved in chromosomal recombination. Therefore, we explored alternative methods for presenting the two concepts of the double-strand break model: Holliday junction and heteroduplex formation, and Holliday junction resolution. In addition to a lecture and…

  14. Wide-range and fast thermally-tunable silicon photonic microring resonators using the junction field effect.

    Science.gov (United States)

    Wang, Xiaoxi; Lentine, Anthony; DeRose, Christopher; Starbuck, Andrew L; Trotter, Douglas; Pomerene, Andrew; Mookherjea, Shayan

    2016-10-03

    Tunable silicon microring resonators with small, integrated micro-heaters which exhibit a junction field effect were made using a conventional silicon-on-insulator (SOI) photonic foundry fabrication process. The design of the resistive tuning section in the microrings included a "pinched" p-n junction, which limited the current at higher voltages and inhibited damage even when driven by a pre-emphasized voltage waveform. Dual-ring filters were studied for both large (>4.9 THz) and small (850 GHz) free-spectral ranges. Thermal red-shifting was demonstrated with microsecond-scale time constants, e.g., a dual-ring filter was tuned over 25 nm in 0.6 μs 10%-90% transition time, and with efficiency of 3.2 μW/GHz.

  15. The lateral line microcosmos.

    Science.gov (United States)

    Ghysen, Alain; Dambly-Chaudière, Christine

    2007-09-01

    The lateral-line system is a simple sensory system comprising a number of discrete sense organs, the neuromasts, distributed over the body of fish and amphibians in species-specific patterns. Its development involves fundamental biological processes such as long-range cell migration, planar cell polarity, regeneration, and post-embryonic remodeling. These aspects have been extensively studied in amphibians by experimental embryologists, but it is only recently that the genetic bases of this development have been explored in zebrafish. This review discusses progress made over the past few years in this field.

  16. Increasing gap junctional coupling: a tool for dissecting the role of gap junctions

    DEFF Research Database (Denmark)

    Axelsen, Lene Nygaard; Haugan, Ketil; Stahlhut, Martin;

    2007-01-01

    . In a number of cases, gap junctions have been implicated in the initiation and progress of disease, and experimental uncoupling has been used to investigate the exact role of coupling. The inverse approach, i.e., to increase coupling, has become possible in recent years and represents a new way of testing......Much of our current knowledge about the physiological and pathophysiological role of gap junctions is based on experiments where coupling has been reduced by either chemical agents or genetic modification. This has brought evidence that gap junctions are important in many physiological processes...... the role of gap junctions. The aim of this review is to summarize the current knowledge obtained with agents that selectively increase gap junctional intercellular coupling. Two approaches will be reviewed: increasing coupling by the use of antiarrhythmic peptide and its synthetic analogs...

  17. A supine cranio-spinal irradiation technique using moving field junctions

    Science.gov (United States)

    Mani, Karthick Raj; Sapru, Shantanu; Maria Das, K. J.; Basu, Ayan

    2016-12-01

    Aim: To demonstrate a simple technique of cranio-spinal irradiation (CSI) in supine position using inter fraction moving field junctions to feather out any potential hot and cold spots. Materials and Methods: Fifteen patients diagnosed with medulloblastoma were treated during the period February 2011 to June 2015 were included in this study. Out of fifteen patients in the study nine were male and 6 were female with a median age of 13.4 years (range 5-27 years). All the patients were positioned supine on CT simulation, immobilized using thermoplastic mask and aligned using room based laser system. Two parallel opposed lateral fields for the whole brain using an asymmetrical jaw with isocenter at C2 vertebral body. A posterior field also placed to cover the cervical and dorsal field using the same isocenter at C2. The second isocenter was placed at lumbar vertebral region to cover the remaining dorsal, lumbar and sacral region using an inter-fraction moving junction. Field-in-field and enhanced dynamic wedge used to homogeneous dose distribution when required. Results and Discussion: In this study, we found that only two patients failed in the primary site, no radiation myelitis or recurrences in the filed junctions were reported in these fifteen patients with a median follow-up of 36.4 months. The automated sequence of treatment plans with moving junctions in the comfortable supine position negating the need for manual junction matching or junction shifts avoiding potential treatment errors and also facilitating delivery of anesthesia where necessary.

  18. Creativity in later life.

    Science.gov (United States)

    Price, K A; Tinker, A M

    2014-08-01

    The ageing population presents significant challenges for the provision of social and health services. Strategies are needed to enable older people to cope within a society ill prepared for the impacts of these demographic changes. The ability to be creative may be one such strategy. This review outlines the relevant literature and examines current public health policy related to creativity in old age with the aim of highlighting some important issues. As well as looking at the benefits and negative aspects of creative activity in later life they are considered in the context of the theory of "successful ageing". Creative activity plays an important role in the lives of older people promoting social interaction, providing cognitive stimulation and giving a sense of self-worth. Furthermore, it is shown to be useful as a tool in the multi-disciplinary treatment of health problems common in later life such as depression and dementia. There are a number of initiatives to encourage older people to participate in creative activities such as arts-based projects which may range from visual arts to dance to music to intergenerational initiatives. However, participation shows geographical variation and often the responsibility of provision falls to voluntary organisations. Overall, the literature presented suggests that creative activity could be a useful tool for individuals and society. However, further research is needed to establish the key factors which contribute to patterns of improved health and well-being, as well as to explore ways to improve access to services.

  19. Brainmining emotive lateral solutions

    Directory of Open Access Journals (Sweden)

    Theodore Scaltsas

    2016-07-01

    Full Text Available BrainMining is a theory of creative thinking that shows how we should exploit the mind’s spontaneous natural disposition to use old solutions to address new problems – our Anchoring Cognitive Bias. BrainMining develops a simple and straightforward method to transform recalcitrant problems into types of problems which we have solved before, and then apply an old type of solution to them. The transformation makes the thinking lateral by matching up disparate types of problem and solution. It emphasises the role of emotive judgements that the agent makes, when she discerns whether a change of the values or the emotions and feelings in a situation, which would expand the space of solutions available for the problem at hand, would be acceptable or appropriate in the situation. A lateral solution for an intractable problem is thus spontaneously brainmined from the agent’s old solutions, to solve a transformed version of the intractable problem, possibly involving changes in the value system or the emotional profile of the situation, which the agent judges, emotively, will be acceptable, and even appropriate in the circumstances.

  20. Lateral Lumbar Interbody Fusion

    Science.gov (United States)

    Hughes, Alexander; Girardi, Federico; Sama, Andrew; Lebl, Darren; Cammisa, Frank

    2015-01-01

    The lateral lumbar interbody fusion (LLIF) is a relatively new technique that allows the surgeon to access the intervertebral space from a direct lateral approach either anterior to or through the psoas muscle. This approach provides an alternative to anterior lumbar interbody fusion with instrumentation, posterior lumbar interbody fusion, and transforaminal lumbar interbody fusion for anterior column support. LLIF is minimally invasive, safe, better structural support from the apophyseal ring, potential for coronal plane deformity correction, and indirect decompression, which have has made this technique popular. LLIF is currently being utilized for a variety of pathologies including but not limited to adult de novo lumbar scoliosis, central and foraminal stenosis, spondylolisthesis, and adjacent segment degeneration. Although early clinical outcomes have been good, the potential for significant neurological and vascular vertebral endplate complications exists. Nevertheless, LLIF is a promising technique with the potential to more effectively treat complex adult de novo scoliosis and achieve predictable fusion while avoiding the complications of traditional anterior surgery and posterior interbody techniques. PMID:26713134

  1. Does the axillary lymph node ratio have any added prognostic value over pN staging for South East Asian breast cancer patients?

    Directory of Open Access Journals (Sweden)

    Nakul Saxena

    Full Text Available INTRODUCTION: Lymph node ratio (LNR, i.e. the ratio of the number of positive nodes to the total number of nodes excised is reported to be superior to the absolute number of nodes involved (pN stage in classifying patients at high versus low risk of death following breast cancer. The added prognostic value of LNR over pN in addition to other prognostic factors has never been assessed. METHODS: All patients diagnosed with lymph node positive, non-metastatic invasive breast cancer at the National University Hospital (Singapore and University of Malaya Medical Center (Kuala Lumpur between 1990-2007 were included (n = 1589. Overall survival of the patients was estimated by the Kaplan Meier method for LNR [categorized as low (>0 and 0.65-1] and pN staging [pN1, pN2 and pN3]. Adjusted overall relative mortality risks associated with LNR and pN were calculated by Cox regression. The added prognostic value of LNR over pN was evaluated by comparing the discriminating capacity (as indicated by the c statistic of two multivariate models, one including pN and one including LNR. RESULTS: LNR was superior to pN in categorizing mortality risks for women ≥60 years, those with ER negative or grade 3 tumors. In combination with other factors (i.e. age, treatment, grade, tumor size and receptor status, substituting pN by LNR did not result in better discrimination of women at high versus low risk of death, neither for the entire cohort (c statistic 0.72 [0.70-0.75] and 0.73 [0.71-0.76] respectively for pN versus LNR, nor for the subgroups mentioned above. CONCLUSION: In combination with other prognosticators, substitution of pN by LNR did not provide any added prognostic value for South East Asian breast cancer patients.

  2. Band alignment of two-dimensional lateral heterostructures

    CERN Document Server

    Zhang, Junfeng; Xie, Weiyu; Zhang, S B

    2016-01-01

    Band alignment in two-dimensional (2D) lateral heterostructures is fundamentally different from three-dimensional (3D), as Schottky barrier height is at the Schottky-Mott limit and band offset is at the Anderson limit, regardless interfacial conditions. This robustness arises because, in the asymptotic limit, effect of interfacial dipole vanishes. First-principles calculations of graphene/h-BN and MoS2/WS2 show that 2D junction width W is typically an order of magnitude longer than 3D. Therefore, heterostructures with dimension less than W can also be made, leading to tunable band alignment.

  3. Created-by-current states in long Josephson junctions

    Science.gov (United States)

    Boyadjiev, T. L.; Andreeva, O. Yu.; Semerdjieva, E. G.; Shukrinov, Yu. M.

    2008-08-01

    Critical curves "critical current-external magnetic field" of long Josephson junctions with inhomogeneity and variable width are studied. We demonstrate the existence of regions of magnetic field where some fluxon states are stable only if the external current through the junction is different from zero. Position and size of such regions depend on the length of the junction, its geometry, parameters of inhomogeneity and form of the junction. The noncentral (left and right) pure fluxon states appear in the inhomogeneous Josephson junction with the increase in the junction length. We demonstrate new bifurcation points with change in width of the inhomogeneity and amplitude of the Josephson current through the inhomogeneity.

  4. SU-E-T-283: Dose Perturbations Near Heterogeneity Junctions for Modulated-Scanning Protons

    Energy Technology Data Exchange (ETDEWEB)

    Deng, Y; Li, Y; Sheng, Y; Zhao, F; Huang, Z; Sun, L; Zhao, J; Moyers, M; Hsi, W; Shahnazi, K [Shanghai Proton and Heavy Ion Center, Shanghai (China)

    2015-06-15

    Purpose: To compare calculated and measured doses near heterogeneity junctions of tissue-substitute materials for modulated-scanning protons. Methods: Three heterogeneous phantoms were configured using slabs of various plastics to simulate lung, fat, soft-tissue (polystyrene), and bone with known relative linear stopping powers (RLSPs). Each phantom consisted of soft-tissue and a single heterogeneity of a 5 or 10 cm thickness of a non-soft-tissue material. CT images were loaded into a Syngo treatment planning system and each material contoured and assigned its RLSP. Planning target volumes (PTVs) were drawn such that a beam would partially traverse the heterogeneity and partially only soft-tissue. Lateral profiles were measured using EDR2 films at a minimum of six depths between the phantom surface and the depth corresponding to the beam range. Absolute doses were measured inside and distal to the PTV in all phantoms using either a parallel plate or thimble chamber. Additional dose measurements were made between two lung slabs. Results: Profiles measured by film generally agreed with calculations except for depths distal to lung and fat junctions. Measured lateral penumbras for depths at the distal junction of lung were found to be wider than calculated ones. Compared with calculated doses, measured doses in the PTVs were 5.19% and 2.51% lower for lung and fat respectively but for bone were 0.2% higher. Measured doses for depths distal to the PTV were up to 29.65% and 10.58% higher for lung and fat, respectively but 6.30% lower for bone. Conclusion: The low measured doses in the PTVs for lung and fat might be due to underestimation of lateral scattering of protons. The higher measured doses distal to the PTV for the lung and fat are a Result of a shortened calculated beam range whereas the higher dose distal to the bone junction is within uncertainties.

  5. Radial junction solar cells based on heterojunction with intrinsic thin layer (HIT) structure

    Science.gov (United States)

    Shen, Haoting

    The radial junction wire array structure was previously proposed as a solar cell geometry to separate the direction of carrier collection from the direction of light absorption, thereby circumventing the need to use high quality but expensive single crystal silicon (c-Si) material that has long minority carrier diffusion lengths. The Si radial junction structure can be realized by forming radial p-n junctions on Si pillar/wire arrays that have a diameter comparable to the minority carrier diffusion length. With proper design, the Si pillar arrays are also able to enhance light trapping and thereby increase the light absorption. However, the larger junction area and surface area on the pillar arrays compared to traditional planar junction Si solar cells makes it challenging to fabricate high performance devices due an in increase in surface defects. Therefore, effective surface passivation strategies are essential for radial junction devices. Hydrogenated amorphous silicon (a-Si:H) deposited by plasma-enhanced chemical vapor deposition (PECVD) using a heterojunction with intrinsic thin layer (HIT) structure has previously been demonstrated as a very effective surface passivation layer for planar c-Si solar cells. It is therefore of interest to use a-Si:H in a HIT layer structure for radial p-n junction c-Si pillar array solar cells. This poses several challenges, however, including the need to fabricate ultra-thin a-Si:H layers conformally on high aspect ratio Si pillars, control the crystallinity at the a-Si:H/c-Si interface to yield a low interface state density and optimize the layer thicknesses, doping and contacts to yield high performance devices. This research in this thesis was aimed at developing the processing technology required to apply the HIT structure to radial junction Si pillar array solar cell devices and to evaluate the device characteristics. Initial studies focused on understanding the effects of process conditions on the growth rate and

  6. Thermionic refrigeration at CNT-CNT junctions

    Science.gov (United States)

    Li, C.; Pipe, K. P.

    2016-10-01

    Monte Carlo (MC) simulation is used to study carrier energy relaxation following thermionic emission at the junction of two van der Waals bonded single-walled carbon nanotubes (SWCNTs). An energy-dependent transmission probability gives rise to energy filtering at the junction, which is predicted to increase the average electron transport energy by as much as 0.115 eV, leading to an effective Seebeck coefficient of 386 μV/K. MC results predict a long energy relaxation length (˜8 μm) for hot electrons crossing the junction into the barrier SWCNT. For SWCNTs of optimal length, an analytical transport model is used to show that thermionic cooling can outweigh parasitic heat conduction due to high SWCNT thermal conductivity, leading to a significant cooling capacity (2.4 × 106 W/cm2).

  7. Vortex structures in exponentially shaped Josephson junctions

    Science.gov (United States)

    Shukrinov, Yu. M.; Semerdjieva, E. G.; Boyadjiev, T. L.

    2005-04-01

    We report the numerical calculations of the static vortex structure and critical curves in exponentially shaped long Josephson junctions for in-line and overlap geometries. Stability of the static solutions is investigated by checking the sign of the smallest eigenvalue of the associated Sturm-Liouville problem. The change in the junction width leads to the renormalization of the magnetic flux in comparison with the case of a linear one-dimensional model. We study the influence of the model's parameters, and particularly, the shape parameter on the stability of the states of the magnetic flux. We compare the vortex structure and critical curves for the in-line and overlap geometries. Our numerically constructed critical curve of the Josephson junction matches well with the experimental one.

  8. Holographic Josephson Junction from Massive Gravity

    CERN Document Server

    Hu, Ya-Peng; Zeng, Hua-Bi; Zhang, Hai-Qing

    2015-01-01

    We study the holographic superconductor-normal metal-superconductor (SNS) Josephon junction in the massive gravity. In the homogeneous case of the chemical potential, we find that the graviton mass will make the normal metal-superconductor phase transition harder to take place. In the holographic model of Josephson junction, it is found that the maximal tunneling current will decrease according to the graviton mass. Besides, the coherence length of the junction decreases as well with respect to the graviton mass. If one interprets the graviton mass as the effect of momentum dissipation in the boundary field theory, it indicates that the stronger the momentum dissipation is, the smaller the coherence length is.

  9. Characterization of magnetic tunnel junction test pads

    DEFF Research Database (Denmark)

    Østerberg, Frederik Westergaard; Kjær, Daniel; Nielsen, Peter Folmer

    2015-01-01

    We show experimentally as well as theoretically that patterned magnetic tunnel junctions can be characterized using the current-in-plane tunneling (CIPT) method, and the key parameters, the resistance-area product (RA) and the tunnel magnetoresistance (TMR), can be determined. The CIPT method...... on square tunnel junction pads with varying sizes and analyze the measured data using both the original and the modified CIPT model. Thus, we determine in which sample size range the modified CIPT model is needed to ensure validity of the extracted sample parameters, RA and TMR. In addition, measurements...... as a function of position on a square tunnel junction pad are used to investigate the sensitivity of the measurement results to probe misalignment....

  10. Gap junction diseases of the skin.

    Science.gov (United States)

    van Steensel, M A M

    2004-11-15

    Gap junctions are intercellular channels that allow the passage of water, ions, and small molecules. They are involved in quick, short-range messaging between cells and are found in skin, nervous tissue, heart, and muscle. An increasing number of hereditary skin disorders appear to be caused by mutations in one of the genes coding for the constituent proteins of gap junctions, known as connexins. In this review, the currently known connexin disorders that feature skin abnormalities are described: keratitis-ichthyosis deafness syndrome, erythrokeratoderma variabilis, Vohwinkel's syndrome, and a novel disorder called hypotrichosis-deafness syndrome. What is known about the pathogenesis of these disorders is discussed and related to gap junction physiology. (c) 2004 Wiley-Liss, Inc.

  11. New method to evaluate the {sup 7}Li(p, n){sup 7}Be reaction near threshold

    Energy Technology Data Exchange (ETDEWEB)

    Herrera, María S., E-mail: herrera@tandar.cnea.gov.ar [Comisión Nacional de Energía Atómica, Av. Gral. Paz 1499, Buenos Aires B1650KNA (Argentina); Consejo Nacional de Investigaciones Científicas y Técnicas, Av. Rivadavia 1917, Ciudad Autónoma de Buenos Aires C1033AAJ (Argentina); Escuela de Ciencia y Tecnología, UNSAM, 25 de Mayo y Francia, Buenos Aires B1650KNA (Argentina); Moreno, Gustavo A. [YPF Tecnología, Baradero S/N, Buenos Aires 1925 (Argentina); Departamento de Física J. J. Giambiagi, Facultad de Ciencias Exactas y Naturales, UBA, Ciudad Universitaria, Ciudad Autónoma de Buenos Aires 1428 (Argentina); Kreiner, Andrés J. [Comisión Nacional de Energía Atómica, Av. Gral. Paz 1499, Buenos Aires B1650KNA (Argentina); Consejo Nacional de Investigaciones Científicas y Técnicas, Av. Rivadavia 1917, Ciudad Autónoma de Buenos Aires C1033AAJ (Argentina); Escuela de Ciencia y Tecnología, UNSAM, 25 de Mayo y Francia, Buenos Aires B1650KNA (Argentina)

    2015-04-15

    In this work a complete description of the {sup 7}Li(p, n){sup 7}Be reaction near threshold is given using center-of-mass and relative coordinates. It is shown that this standard approach, not used before in this context, leads to a simple mathematical representation which gives easy access to all relevant quantities in the reaction and allows a precise numerical implementation. It also allows in a simple way to include proton beam-energy spread affects. The method, implemented as a C++ code, was validated both with numerical and experimental data finding a good agreement. This tool is also used here to analyze scattered published measurements such as (p, n) cross sections, differential and total neutron yields for thick targets. Using these data we derive a consistent set of parameters to evaluate neutron production near threshold. Sensitivity of the results to data uncertainty and the possibility of incorporating new measurements are also discussed.

  12. $^{7}Li(p,n)$ Nuclear Data Library for Incident Proton Energies to 150 MeV

    CERN Document Server

    Mashnik, S G; Hughes, H G; Little, R C; MacFarlane, R E; Waters, L S; Young, P G

    2000-01-01

    We describe evaluation methods that make use of experimental data, and nuclear model calculations, to develop an ENDF-formatted data library for the reaction p + Li7 for incident protons with energies up to 150 MeV. The important 7-Li(p,n_0) and 7-Li(p,n_1) reactions are evaluated from the experimental data, with their angular distributions represented using Lengendre polynomial expansions. The decay of the remaining reaction flux is estimated from GNASH nuclear model calculations. The evaluated ENDF-data are described in detail, and illustrated in numerous figures. We also illustrate the use of these data in a representative application by a radiation transport simulation with the code MCNPX.

  13. Epicondilite lateral do cotovelo

    OpenAIRE

    Cohen,Marcio; Motta Filho,Geraldo da Rocha

    2012-01-01

    A epicondilite lateral, também conhecida como cotovelo do tenista, é uma condição comum que acomete de 1 a 3% da população. O termo epicondilite sugere inflamação, embora a análise histológica tecidual não demonstre um processo inflamatório. A estrutura acometida com mais frequência é a origem do tendão extensor radial curto do carpo e o mecanismo de lesão está associado à sua sobrecarga. O tratamento incruento é o de escolha e inclui: repouso, fisioterapia, infiltração com cortisona ou plasm...

  14. Vitiligo Lateral Lower Lip

    Directory of Open Access Journals (Sweden)

    Sahoo Antaryami

    2002-01-01

    Full Text Available Vitiligo characteristically affecting the lateral lower lip (LLL is a common presentation in South Orissa. This type of lesion has rarely been described in literature. One hundred eighteen such cases were studied during the period from October 1999 to September, 2000. LLL vitiligo constituted 16.39% of all vitiligo patients. Both sexes were affected equally. The peak age of onset was in the 2nd decade, mean duration of illness 21.46 months. Fifty six patients had unilateral lesion (38 on the left and 18 on the right. Among the 62 patients having bilateral lesions, the onset was more frequent on the left (38 than either the right (8 or both sides together (16. All the patients were right handed. Association with local factors like infection, trauma, cheilitis, FDE etc were associated in 38.98% of cases, but systemic or autoimmune diseases were not associated. Positive family history was found in 22% of cases.

  15. Lateral conduction infrared photodetector

    Science.gov (United States)

    Kim, Jin K.; Carroll, Malcolm S.

    2011-09-20

    A photodetector for detecting infrared light in a wavelength range of 3-25 .mu.m is disclosed. The photodetector has a mesa structure formed from semiconductor layers which include a type-II superlattice formed of alternating layers of InAs and In.sub.xGa.sub.1-xSb with 0.ltoreq.x.ltoreq.0.5. Impurity doped regions are formed on sidewalls of the mesa structure to provide for a lateral conduction of photo-generated carriers which can provide an increased carrier mobility and a reduced surface recombination. An optional bias electrode can be used in the photodetector to control and vary a cut-off wavelength or a depletion width therein. The photodetector can be formed as a single-color or multi-color device, and can also be used to form a focal plane array which is compatible with conventional read-out integrated circuits.

  16. Overdamped Josephson junctions for digital applications

    Energy Technology Data Exchange (ETDEWEB)

    Febvre, P., E-mail: Pascal.Febvre@univ-savoie.fr [University of Savoie, IMEP-LAHC – CNRS UMR5130, 73376 Le Bourget du Lac (France); De Leo, N.; Fretto, M.; Sosso, A. [I.N.Ri.M., Istituto Nazionale di Ricerca Metrologica, Strada delle Cacce 91, 10135 Torino (Italy); Belogolovskii, M. [Donetsk Institute for Physics and Engineering, 72 R. Luxemburg str., 83114 Donetsk (Ukraine); Collot, R. [University of Savoie, IMEP-LAHC – CNRS UMR5130, 73376 Le Bourget du Lac (France); Lacquaniti, V. [I.N.Ri.M., Istituto Nazionale di Ricerca Metrologica, Strada delle Cacce 91, 10135 Torino (Italy)

    2013-01-15

    Highlights: ► Properties of self-shunted sub-micron Nb/Al–AlO{sub x}/Nb SNIS junctions are studied. ► 1–100 kA/cm{sup 2} current densities and 0.1–0.7 mV critical voltages are obtained. ► The critical voltage-vs-temperature behavior of SNIS junctions is discussed. ► Numerical results showing an effect of the aluminum film thickness are presented. ► A Josephson balanced comparator is studied for different temperatures of operation. -- Abstract: An interesting feature of Superconductor–Normal metal–Superconductor Josephson junctions for digital applications is due to their non-hysteretic current–voltage characteristics in a broad temperature range below T{sub c}. This allows to design Single-Flux-Quantum (SFQ) cells without the need of external shunts. Two advantages can be drawn from this property: first the SFQ cells can be more compact which leads to a more integrated solution towards nano-devices and more complex circuits; second the absence of electrical parasitic elements associated with the wiring of resistors external to the Josephson junctions increases the performance of SFQ circuits, in particular regarding the ultimate speed of operation. For this purpose Superconductor–Normal metal–Insulator–Superconductor Nb/Al–AlO{sub x}/Nb Josephson junctions have been recently developed at INRiM with aluminum layer thicknesses between 30 and 100 nm. They exhibit non-hysteretic current–voltage characteristics with I{sub c}R{sub n} values higher than 0.5 mV in a broad temperature range and optimal Stewart McCumber parameters at 4.2 K for RSFQ applications. The main features of obtained SNIS junctions regarding digital applications are presented.

  17. P(n,k)的计数及其良域%On the Calculation of P(n,k) and its Good Field

    Institute of Scientific and Technical Information of China (English)

    伍启期

    2001-01-01

    设P(n,k)为整数n分为k部的无序分拆的个数,每个分部≥1;P(n)为n的全分拆的个数.P(n,k)是用途广泛的、且又十分难予计算的数.本文证明了下述定理:当n<k,P(n,k)=0;当k≤n≤2k,P(n,k)=P(n-k);当k=1,4≤n≤5,或者当k≥2,2k+1≤n≤3k+2,P(n,k)=P(n-k)-P(t)还定义了P(n,k)的良城,因面可借助若干个P(n)的值,迅速地计算大量的P(n,k)的值.%Let P(n,k) be the number of unordered partitions of an integer n into k parts, where each part ≥1, and P(n) the number of all unordered partitions of n (so,in brief, it is called the number of total partitions). The number P(n,k) has a broad applications. However, it is rather difficult to find the values of P(n,k).   In this paper we give the following theorem: P(n,k) =0, when n < k; P(n,k) = P(n - k) ,when k ≤ n ≤ 2k ;and P(n,k) = P(n - k)-P(t),when k=1,4≤n≤ 5, or when k ≥ 2,2k + 1 ≤ n ≤ 3k + 2. And we define also the good field of P(n,k). This theorem will help us find numberless the values of P(n,k) quickly with the aid of the values of P(n) .

  18. Boron neutron capture therapy design calculation of a 3H(p,n) reaction based BSA for brain cancer setup

    OpenAIRE

    Bassem Elshahat; Akhtar Naqvi; Nabil Maalej

    2015-01-01

    Purpose: Boron neutron capture therapy (BNCT) is a promising technique for the treatment of malignant disease targeting organs of the human body. Monte Carlo simulations were carried out to calculate optimum design parameters of an accelerator based beam shaping assembly (BSA) for BNCT of brain cancer setup.Methods: Epithermal beam of neutrons were obtained through moderation of fast neutrons from 3H(p,n) reaction in a high density polyethylene moderator and a graphite reflector. The dimensio...

  19. Integrated silicon p–i–n structures with highly doped p++, n++ regions for modulation in terahertz frequency band

    OpenAIRE

    2010-01-01

    Modulators of terahertz range on the base of silicon integrated p–i–n-structures are investigated theoretically. The generalization of the Fletcher boundary conditions at the injecting contacts has been put forward for the case of highly doped p++, n++ regions, where both forbidden gap narrowing and dependence of coefficients of diffusion on doping concentration are taken into account. The problem of double injection into i-region has been simulated in a two-dimensional case. The investigatio...

  20. AB-BNCT beam shaping assembly based on {sup 7}Li(p,n){sup 7}Be reaction optimization

    Energy Technology Data Exchange (ETDEWEB)

    Minsky, D.M., E-mail: minsky@tandar.cnea.gov.ar [Gerencia de Investigacion y Aplicaciones, CNEA, Av. Gral Paz 1499 (B1650KNA), San Martin, Buenos Aires (Argentina)] [Escuela de Ciencia y Tecnologia, UNSAM, M. de Irigoyen 3100 (1650), San Martin (Argentina)] [CONICET, Av. Rivadavia 1917 (C1033AAJ), Buenos Aires (Argentina); Kreiner, A.J. [Gerencia de Investigacion y Aplicaciones, CNEA, Av. Gral Paz 1499 (B1650KNA), San Martin, Buenos Aires (Argentina)] [Escuela de Ciencia y Tecnologia, UNSAM, M. de Irigoyen 3100 (1650), San Martin (Argentina)] [CONICET, Av. Rivadavia 1917 (C1033AAJ), Buenos Aires (Argentina); Valda, A.A. [Gerencia de Investigacion y Aplicaciones, CNEA, Av. Gral Paz 1499 (B1650KNA), San Martin, Buenos Aires (Argentina)] [Escuela de Ciencia y Tecnologia, UNSAM, M. de Irigoyen 3100 (1650), San Martin (Argentina)

    2011-12-15

    A numerical optimization of a Beam Shaping Assembly (BSA) for Accelerator Based-Boron Neutron Capture Therapy (AB-BNCT) has been performed. The reaction {sup 7}Li(p,n){sup 7}Be has been considered using a proton beam on a lithium fluoride target. Proton energy and the dimensions of a simple BSA geometry have been varied to obtain a set of different configurations. The optimal configuration of this set is shown.

  1. A possible cooperative structural transition of DNA in the 0.25-2.0 pN range.

    Science.gov (United States)

    Schurr, J Michael

    2015-05-28

    The measured effective torsional rigidities of single twisted DNAs under various tensions conflict with theoretical predictions of Moroz and Nelson (MN) at low forces in the 0.25-2.0 pN range. However, MN theory was recently shown to agree well with effective torsional rigidities obtained from simulations, indicating that MN theory is valid down to 0.25 pN for a filament with a constant intrinsic torsional rigidity. Here MN theory is used with an assumed persistence length, 50 nm, to obtain the force-dependent intrinsic torsional rigidity of the filament at each force from its measured effective torsional rigidity. The resulting values rise ∼1.8-fold with increasing force from 0.25 to 2.0 pN. Unexpected behavior of the relative extensions of the untwisted DNAs of Mosconi et al. is noted, and ascribed to a small increase in contour length with force over the 0.18-2.0 pN range. The variations of both the intrinsic torsional rigidity and rise per base pair (bp) with force are suggested to arise from a force-induced shift of a cooperative equilibrium between two conformations with different rises per bp. A two-state nearest-neighbor model is formulated, and ranges of optimal parameters are determined by fitting the model to the experimental differences in rise per bp as a function of force. Optimal adjustment of the torsion elastic constants of the two states enables the same optimal model(s) with fixed parameters to provide reasonably good fits of the experimental torsion elastic constant data. The results reconcile single-molecule measurements on DNAs under tension with numerous results from fluorescence polarization anisotropy, topoisomer distributions, X-ray scattering of DNAs with attached gold colloids, and other kinds of measurements.

  2. Fast transient response of novel Peltier junctions

    Energy Technology Data Exchange (ETDEWEB)

    Hoyos, G.E.; Rao, K.R.; Jerger, D.

    1977-01-01

    The fast transient response of a thermoelectric (TE) cooler with novel geometry is discussed. This geometry involves conical semiconductor legs whose hot to cold junction cross-sectional area ratios can be varied. The novel TE junctions are fabricated such that the thermal capacitance and electrical conductance are decreased while simultaneously increasing the thermal resistance. The experimental apparatus which includes the vacuum system, power supplies, pulse and control circuitry, sensing and measuring instrumentation etc. is described. With narrow pulse width and large amplitudes, additional cooling of the order of 45/sup 0/C below the steady-state maximum with recovery times in the range of 1 to 3 sec is obtained.

  3. The Geometric Field at a Josephson Junction

    CERN Document Server

    Atanasov, Victor

    2016-01-01

    A geometric potential from the kinetic term of a constrained to a curved hyper-plane of space-time quantum superconducting condensate is derived. An energy conservation relation involving the geometric field at every material point in the superconductor is demonstrated. At a Josephson junction the energy conservation relation implies the possibility to transform electric energy into geometric field energy, that is curvature of space-time. Experimental procedures to verify that the Josephson junction can act as a voltage-to-curvature converter are discussed.

  4. Microscopic tunneling theory of long Josephson junctions

    DEFF Research Database (Denmark)

    Grønbech-Jensen, N.; Hattel, Søren A.; Samuelsen, Mogens Rugholm

    1992-01-01

    We present a numerical scheme for solving a nonlinear partial integro-differential equation with nonlocal time dependence. The equation describes the dynamics in a long Josephson junction modeled by use of the microscopic theory for tunneling between superconductors. We demonstrate that the detai......We present a numerical scheme for solving a nonlinear partial integro-differential equation with nonlocal time dependence. The equation describes the dynamics in a long Josephson junction modeled by use of the microscopic theory for tunneling between superconductors. We demonstrate...

  5. Rectangular-to-circular groove waveguide junction

    Institute of Scientific and Technical Information of China (English)

    CUI; Licheng; (崔立成); YANG; Hongsheng; (杨鸿生)

    2003-01-01

    Mode matching method is used to analyze the scattering characteristics of the rectangular-to-circular groove waveguide junction. Firstly, the scattering matrix equation is obtained by matching the electromagnetic fields at the boundary of the junction. The scattering coefficients can be obtained from the equation. Secondly the scattering characteristics of the iris with rectangular window positioned in circular groove waveguide are briefly analyzed. Thirdly, the convergent problem is discussed and the numerical results are given. At last experiment is made and good agreement is found between the calculated results and the measured results.

  6. Electroplated Ni on the PN Junction Semiconductor

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Jin Joo; Uhm, Young Rang; Son, Kwang Jae; Kim, Jong Bum; Choi, Sang Moo; Park, Jong Han; Hong, Jintae [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of)

    2015-05-15

    Nickel (Ni) electroplating was implemented by using a metal Ni powder in order to establish a Ni-63 plating condition on the PN junction semiconductor needed for production of betavoltaic battery. PN junction semiconductors with a Ni seed layer of 500 and 1000 A were coated with Ni at current density from 10 to 50 mA cm{sup 2}. The surface roughness and average grain size of Ni deposits were investigated by XRD and SEM techniques. The roughness of Ni deposit was increased as the current density was increased, and decreased as the thickness of Ni seed layer was increased.

  7. Predicted neutron yield and radioactivity for laser-induced (p,n) reactions in LiF

    Energy Technology Data Exchange (ETDEWEB)

    Swift, D C; McNaney, J M

    2009-01-30

    Design calculations are presented for a pulsed neutron source comprising polychromatic protons accelerated from a metal foil by a short-pulse laser, and a LiF converter in which (p,n) reactions occur. Although the proton pulse is directional, neutrons are predicted to be emitted relatively isotropically. The neutron spectrum was predicted to be similar to the proton spectrum, but with more neutrons of low energy in the opposite direction to the incident protons. The angular dependence of spectrum and intensity was predicted. The (p,n) reactions generate unstable nuclei which decay predominantly by positron emission to the original {sup 7}Li and {sup 19}F isotopes. For the initial planned experiments using a converter 1mm thick, we predict that 0.1% of the protons will undergo a (p,n) reaction, producing 10{sup 9} neutrons. Ignoring the unreacted protons, neutrons, and prompt gamma emission as excited nuclear states decay, residual positron radioactivity (and production of pairs of 511 keV annihilation photons) is initially 4.2MBq decaying with a half-life of 17.22 s for 6 mins ({sup 19}Ne decays), then 135Bq decaying with a half-life of 53.22 days ({sup 7}Be decays).

  8. Gap junctions and hemichannels composed of connexins: potential therapeutic targets for neurodegenerative diseases

    Directory of Open Access Journals (Sweden)

    Hideyuki eTakeuchi

    2014-09-01

    Full Text Available Microglia are macrophage-like resident immune cells that contribute to the maintenance of homeostasis in the central nervous system (CNS. Abnormal activation of microglia can cause damage in the CNS, and accumulation of activated microglia is a characteristic pathological observation in neurologic conditions such as trauma, stroke, inflammation, epilepsy, and neurodegenerative diseases. Activated microglia secrete high levels of glutamate, which damages CNS cells and has been implicated as a major cause of neurodegeneration in these conditions. Glutamate-receptor blockers and microglia inhibitors (e.g. minocycline have been examined as therapeutic candidates for several neurodegenerative diseases; however, these compounds exerted little therapeutic benefit because they either perturbed physiological glutamate signals or suppressed the actions of protective microglia. The ideal therapeutic approach would hamper the deleterious roles of activated microglia without diminishing their protective effects. We recently found that abnormally activated microglia secrete glutamate via gap-junction hemichannels on the cell surface. Moreover, administration of gap-junction inhibitors significantly suppressed excessive microglial glutamate release and improved disease symptoms in animal models of neurologic conditions such as stroke, multiple sclerosis, amyotrophic lateral sclerosis, and Alzheimer’s disease. Recent evidence also suggests that neuronal and glial communication via gap junctions amplifies neuroinflammation and neurodegeneration. Elucidation of the precise pathologic roles of gap junctions and hemichannels may lead to a novel therapeutic strategies that can slow and halt the progression of neurodegenerative diseases.

  9. Gap junctions and hemichannels composed of connexins: potential therapeutic targets for neurodegenerative diseases

    Science.gov (United States)

    Takeuchi, Hideyuki; Suzumura, Akio

    2014-01-01

    Microglia are macrophage-like resident immune cells that contribute to the maintenance of homeostasis in the central nervous system (CNS). Abnormal activation of microglia can cause damage in the CNS, and accumulation of activated microglia is a characteristic pathological observation in neurologic conditions such as trauma, stroke, inflammation, epilepsy, and neurodegenerative diseases. Activated microglia secrete high levels of glutamate, which damages CNS cells and has been implicated as a major cause of neurodegeneration in these conditions. Glutamate-receptor blockers and microglia inhibitors (e.g., minocycline) have been examined as therapeutic candidates for several neurodegenerative diseases; however, these compounds exerted little therapeutic benefit because they either perturbed physiological glutamate signals or suppressed the actions of protective microglia. The ideal therapeutic approach would hamper the deleterious roles of activated microglia without diminishing their protective effects. We recently found that abnormally activated microglia secrete glutamate via gap-junction hemichannels on the cell surface. Moreover, administration of gap-junction inhibitors significantly suppressed excessive microglial glutamate release and improved disease symptoms in animal models of neurologic conditions such as stroke, multiple sclerosis, amyotrophic lateral sclerosis, and Alzheimer's disease. Recent evidence also suggests that neuronal and glial communication via gap junctions amplifies neuroinflammation and neurodegeneration. Elucidation of the precise pathologic roles of gap junctions and hemichannels may lead to a novel therapeutic strategies that can slow and halt the progression of neurodegenerative diseases. PMID:25228858

  10. Gap junctions and hemichannels composed of connexins: potential therapeutic targets for neurodegenerative diseases.

    Science.gov (United States)

    Takeuchi, Hideyuki; Suzumura, Akio

    2014-01-01

    Microglia are macrophage-like resident immune cells that contribute to the maintenance of homeostasis in the central nervous system (CNS). Abnormal activation of microglia can cause damage in the CNS, and accumulation of activated microglia is a characteristic pathological observation in neurologic conditions such as trauma, stroke, inflammation, epilepsy, and neurodegenerative diseases. Activated microglia secrete high levels of glutamate, which damages CNS cells and has been implicated as a major cause of neurodegeneration in these conditions. Glutamate-receptor blockers and microglia inhibitors (e.g., minocycline) have been examined as therapeutic candidates for several neurodegenerative diseases; however, these compounds exerted little therapeutic benefit because they either perturbed physiological glutamate signals or suppressed the actions of protective microglia. The ideal therapeutic approach would hamper the deleterious roles of activated microglia without diminishing their protective effects. We recently found that abnormally activated microglia secrete glutamate via gap-junction hemichannels on the cell surface. Moreover, administration of gap-junction inhibitors significantly suppressed excessive microglial glutamate release and improved disease symptoms in animal models of neurologic conditions such as stroke, multiple sclerosis, amyotrophic lateral sclerosis, and Alzheimer's disease. Recent evidence also suggests that neuronal and glial communication via gap junctions amplifies neuroinflammation and neurodegeneration. Elucidation of the precise pathologic roles of gap junctions and hemichannels may lead to a novel therapeutic strategies that can slow and halt the progression of neurodegenerative diseases.

  11. Common features of a vortex structure in long exponentially shaped Josephson junctions and Josephson junctions with inhomogeneities

    Science.gov (United States)

    Boyadjiev, T. L.; Semerdjieva, E. G.; Shukrinov, Yu. M.

    2007-09-01

    We study the vortex structure in three different models of the long Josephson junction: the exponentially shaped Josephson junction and the Josephson junctions with the resistor and the shunt inhomogeneities in the barrier layer. For these three models the critical curves “critical current-magnetic field” are numerically constructed. We develop the idea of the equivalence of the exponentially shaped Josephson junction and the rectangular junction with the distributed inhomogeneity and demonstrate that at some parameters of the shunt and the resistor inhomogeneities in the ends of the junction the corresponding critical curves are very close to the exponentially shaped one.

  12. Common features of a vortex structure in long exponentially shaped Josephson junctions and Josephson junctions with inhomogeneities

    Energy Technology Data Exchange (ETDEWEB)

    Boyadjiev, T.L. [Joint Institute for Nuclear Research, 141980 Dubna (Russian Federation); Semerdjieva, E.G. [Plovdiv University, 24 Tzar Asen Str., Plovdiv 4000 (Bulgaria); Shukrinov, Yu.M. [Joint Institute for Nuclear Research, 141980 Dubna (Russian Federation)], E-mail: shukrinv@theor.jinr.ru

    2007-09-01

    We study the vortex structure in three different models of the long Josephson junction: the exponentially shaped Josephson junction and the Josephson junctions with the resistor and the shunt inhomogeneities in the barrier layer. For these three models the critical curves 'critical current-magnetic field' are numerically constructed. We develop the idea of the equivalence of the exponentially shaped Josephson junction and the rectangular junction with the distributed inhomogeneity and demonstrate that at some parameters of the shunt and the resistor inhomogeneities in the ends of the junction the corresponding critical curves are very close to the exponentially shaped one.

  13. Lateral Thinking and Technology Education.

    Science.gov (United States)

    Waks, Shlomo

    1997-01-01

    Presents an analysis of technology education and its relevance to lateral thinking. Discusses prospects for utilizing technology education as a platform and a contextual domain for nurturing lateral thinking. Argues that technology education is an appropriate environment for developing complementary incorporation of vertical and lateral thinking.…

  14. Role of gap junctions on synchronization in human neocortical networks.

    Science.gov (United States)

    Gigout, S; Deisz, R A; Dehnicke, C; Turak, B; Devaux, B; Pumain, R; Louvel, J

    2016-04-15

    Gap junctions (GJ) have been implicated in the synchronization of epileptiform activities induced by 4-aminopyrine (4AP) in slices from human epileptogenic cortex. Previous evidence implicated glial GJ to govern the frequency of these epileptiform events. The synchrony of these events (evaluated by the phase unlocking index, PUI) in adjacent areas however was attributed to neuronal GJ. In the present study, we have investigated the effects of GAP-134, a recently developed specific activator of glial GJ, on both the PUI and the frequency of the 4AP-induced epileptiform activities in human neocortical slices of temporal lobe epilepsy tissue. To delineate the impact of GJ on spatial spread of synchronous activity we evaluated the effects of carbenoxolone (CBX, a non-selective GJ blocker) on the spread in three axes 1. vertically in a given cortical column, 2. laterally within the deep cortical layers and 3. laterally within the upper cortical layers. GAP-134 slightly increased the frequency of the 4AP-induced spontaneous epileptiform activities while leaving the PUI unaffected. CBX had no effect on the PUI within a cortical column or on the PUI in the deep cortical layers. CBX increased the PUI for long interelectrodes distances in the upper cortical layers. In conclusion we provide new arguments toward the role played by glial GJ to maintain the frequency of spontaneous activities. We show that neuronal GJ control the PUI only in upper cortical layers.

  15. Transcriptional mechanisms coordinating tight junction assembly during epithelial differentiation.

    Science.gov (United States)

    Boivin, Felix J; Schmidt-Ott, Kai M

    2017-06-01

    Epithelial tissues form a selective barrier via direct cell-cell interactions to separate and establish concentration gradients between the different compartments of the body. Proper function and formation of this barrier rely on the establishment of distinct intercellular junction complexes. These complexes include tight junctions, adherens junctions, desmosomes, and gap junctions. The tight junction is by far the most diverse junctional complex in the epithelial barrier. Its composition varies greatly across different epithelial tissues to confer various barrier properties. Thus, epithelial cells rely on tightly regulated transcriptional mechanisms to ensure proper formation of the epithelial barrier and to achieve tight junction diversity. Here, we review different transcriptional mechanisms utilized during embryogenesis and disease development to promote tight junction assembly and maintenance of intercellular barrier integrity. We focus particularly on the Grainyhead-like transcription factors and ligand-activated nuclear hormone receptors, two central families of proteins in epithelialization. © 2017 New York Academy of Sciences.

  16. A cephalometric method to diagnosis the craniovertebral junction abnormalities in osteogenesis imperfecta patients

    Science.gov (United States)

    Ríos-Rodenas, Mercedes; Gutiérrez-Díez, María-Pilar; Feijóo, Gonzalo; Mourelle, Maria-Rosa; Garcilazo, Mario; Ortega-Aranegui, Ricardo

    2015-01-01

    Osteogenesis imperfecta (OI) is a hereditary bone fragility disorder that in most patients is caused by mutations affecting collagen type I. Their typical oral and craneofacial characteristics (Dentinogenesis imperfecta type I and class III malocclusion), involve the dentist in the multidisciplinary team that treat these patients. It is usual to perform lateral skull radiographs for the orthodontic diagnosis. In addition, this radiograph is useful to analyse the junctional area between skull base and spine, that could be damaged in OI. Pathology in the craneovertebral junction (CVJ) is a serious complication of OI with a prevalence ranging from rare to 37%. To diagnosis early skull base anomalies in these patients, previously the neurological symptoms have been appear, we make a simple cephalometric analysis of the CVJ. This method has four measurements and one angle. Once we calculate the values of the OI patient, we compare the result with the mean and the standard deviations of an age-appropriate average in healthy controls. If the patient has a result more than 2,5 SDs above the age-appropriate average in healthy controls, we should to refer the patient to his/her pediatrician or neurologist. These doctors have to consider acquiring another diagnostic images to be used to determine cranial base measurements with more reliability. Thereby, dentists who treat these patients, must be aware of the normal radiological anatomy of the cervical spine on the lateral cephalogram. Key words:Osteogenesis imperfecta, craniovertebral junction, cephalometric. PMID:25810828

  17. ZnSe/GaAs/Ge Triple Junction Solar Cell and Its Structure Design

    Institute of Scientific and Technical Information of China (English)

    Aikun WANG; Guochang LI; Guoxiang ZHOU; Jertrude F. Neumark

    2004-01-01

    A new method is given to increase doping concentration of p-type ZnSe up to 1× 10i8 cm-3 through adding a little Te. This method gets over the difficulty of the high doping concentration of p-type ZnSe for many years. The external quantum efficiency (QE) of ZnSe p-n junction solar cell has been measured, and ZnSe is a good material of the top cell in the tandem solar cells. The solar cells made from ZnSe/GaAs/Ge can cover 94% of the total solar spectrum under AM (air mass) 1.5, and their theoretical efficiency is 56%.

  18. [Lateral lumbar disk hernia].

    Science.gov (United States)

    Monod, A; Desmoineaux, P; Deburge, A

    1990-01-01

    Lateral lumbar disc herniations (L.D.H.) develop in the foramen, and compress the nerve root against the overlying vertebral pedicle. In our study of L.D.H. from the clinical, radiographical, and therapeutical aspects, we reviewed 23 cases selected from the 590 patients treated for discal herniation from 1984 to 1987. The frequency of L.D.H. in this series was 3.8 per cent. The clinical pattern brings out some suggestive signs of L.D.H. (frequency of cruralgia, a seldom very positive Lasegue's test, the paucity of spinal signs, non impulsive pain). Saccoradiculography and discography rarely evidenced the L.D.H.. The T.D.M. was the investigation of choice on condition that it was correctly used. When the image was doubtful, disco-CT confirmation should be proceeded too. This latter method of investigation enabled the possibility of sequestration to be explored. 14 patients were treated by chemonucleolysis, with 9 successful outcomes. The 5 failures were cases where chemonucleolysis should not have been indicated, mainly due to associated osseous stenosis. 9 patients underwent immediate surgery with good results in each case.

  19. Amyotrophic lateral sclerosis: update

    Directory of Open Access Journals (Sweden)

    Zapata-Zapata, Carlos Hugo

    2016-04-01

    Full Text Available Amyotrophic lateral sclerosis is a neurodegenerative disease with devastating consequences for the patient and his/her family. Its etiology is still not clear. In about 10 % of the patients there is a hereditary pattern of the disease. Worldwide, prevalence ranges from 2 to 11 cases per 100,000 people. Age of presentation varies from 58 to 63 years for sporadic cases, and from 47 to 52 years for the familial ones. Concerning gender, there is a slight preference for males. Clinical manifestations include signs of upper and lower motor neurons, damage in limbs and bulbar muscles, and, in some patients, frontotemporal cognitive dysfunction. Diagnosis is essentially clinical supported by neurophysiological studies, such as needle electromyography, which is the most important test for early diagnosis. There is no cure, but riluzol has proven to delay the use of mechanical ventilation and to slightly prolong survival. Consequently, management is based on support measures, such as those related to nutrition and ventilatory function, in addition to control of the motor and non-motor symptoms of the disease.

  20. Ballistic transport in InSb Josephson junctions

    Science.gov (United States)

    Damasco, John Jeffrey; Gill, Stephen; Car, Diana; Bakkers, Erik; Mason, Nadya

    We present transport measurements on Josephson junctions consisting of InSb nanowires contacted by Al at various junction lengths. Junction behavior as a function of gate voltage, electric field, and magnetic field is discussed. We show that short junctions behave as 1D quantum wires, exhibiting quantized conductance steps. In addition, we show how Josephson behavior changes as transport evolves from ballistic to diffusive as a function of contact spacing.

  1. Dynamics near Resonance Junctions in Hamiltonian Systems

    CERN Document Server

    Goto, S; Goto, Shin-itiro; Nozaki, Kazuhiro

    1999-01-01

    An approximate Poincare map near equally strong multiple resonances is reduced by means the method of averaging. Near the resonance junction of three degrees of freedom, we find that some homoclinic orbits ``whiskers'' in single resonance lines survive and form nearly periodic orbits, each of which looks like a pair of homoclinic orbits.

  2. Cooling of suspended nanostructures with tunnel junctions

    OpenAIRE

    Koppinen, P. J.; Maasilta, I. J.

    2009-01-01

    We have investigated electronic cooling of suspended nanowires with SINIS tunnel junction coolers. The suspended samples consist of a free standing nanowire suspended by four narrow ($\\sim$ 200 nm) bridges. We have compared two different cooler designs for cooling the suspended nanowire. We demonstrate that cooling of the nanowire is possible with a proper SINIS cooler design.

  3. Polyphosphonium-based ion bipolar junction transistors.

    Science.gov (United States)

    Gabrielsson, Erik O; Tybrandt, Klas; Berggren, Magnus

    2014-11-01

    Advancements in the field of electronics during the past few decades have inspired the use of transistors in a diversity of research fields, including biology and medicine. However, signals in living organisms are not only carried by electrons but also through fluxes of ions and biomolecules. Thus, in order to implement the transistor functionality to control biological signals, devices that can modulate currents of ions and biomolecules, i.e., ionic transistors and diodes, are needed. One successful approach for modulation of ionic currents is to use oppositely charged ion-selective membranes to form so called ion bipolar junction transistors (IBJTs). Unfortunately, overall IBJT device performance has been hindered due to the typical low mobility of ions, large geometries of the ion bipolar junction materials, and the possibility of electric field enhanced (EFE) water dissociation in the junction. Here, we introduce a novel polyphosphonium-based anion-selective material into npn-type IBJTs. The new material does not show EFE water dissociation and therefore allows for a reduction of junction length down to 2 μm, which significantly improves the switching performance of the ion transistor to 2 s. The presented improvement in speed as well the simplified design will be useful for future development of advanced iontronic circuits employing IBJTs, for example, addressable drug-delivery devices.

  4. Flux interactions on stacked Josephson junctions

    DEFF Research Database (Denmark)

    Scott, Alwyn C.; A., Petraglia

    1996-01-01

    Perturbation methods are used to study the dynamics of locked fluxon modes on stacked Josephson junctions and single crystals of certain high-T-c, superconductors. Two limiting cases are considered: (i) The nonlinear diffusion regime in which fluxon dynamics are dominated by energy exchange betwe...

  5. Defect formation in long Josephson junctions

    DEFF Research Database (Denmark)

    Gordeeva, Anna; Pankratov, Andrey

    2010-01-01

    We study numerically a mechanism of vortex formation in a long Josephson junction within the framework of the one-dimensional sine-Gordon model. This mechanism is switched on below the critical temperature. It is shown that the number of fluxons versus velocity of cooling roughly scales according...

  6. Gap junction diseases of the skin.

    NARCIS (Netherlands)

    Steensel, M.A.M. van

    2004-01-01

    Gap junctions are intercellular channels that allow the passage of water, ions, and small molecules. They are involved in quick, short-range messaging between cells and are found in skin, nervous tissue, heart, and muscle. An increasing number of hereditary skin disorders appear to be caused by muta

  7. Gap junctions-guards of excitability

    DEFF Research Database (Denmark)

    Stroemlund, Line Waring; Jensen, Christa Funch; Qvortrup, Klaus;

    2015-01-01

    Cardiomyocytes are connected by mechanical and electrical junctions located at the intercalated discs (IDs). Although these structures have long been known, it is becoming increasingly clear that their components interact. This review describes the involvement of the ID in electrical disturbances...

  8. Fluxon density waves in long Josephson junctions

    DEFF Research Database (Denmark)

    Olsen, O. H.; Ustinov, A. V.; Pedersen, Niels Falsig

    1993-01-01

    Numerical simulations of the multiple fluxon dynamics stimulated by an external oscillating force applied at a boundary of a long Josephson junction are presented. The calculated IV characteristics agree well with a recent experimental observation of rf-induced satellite flux-flow steps. The volt...... density waves....

  9. Transmembrane potentials of canine AV junctional tissues.

    Science.gov (United States)

    Tse, W W

    1986-06-01

    The atrioventricular (AV) junction comprises the AV node, His bundle (HB), and specialized tissues proximal to the node called paranodal fibers (PNF). In the present study, an in vitro, dissection-exposed canine right atrial (RA), transitional fiber (TF), AV junctional preparation was used. The TF and PNF formed a pathway running along the base of the septal cusp of the tricuspid valve (SCTV). In the first experiment, impulses elicited at the RA were monitored to propagate sequentially through the TF, PNF, AV node, and then the HB. This functional evidence supports the concept that a conduction pathway connecting the RA and the AV node exists along the base of the SCTV. This internodal pathway is referred to as the septal cusp pathway. In another experiment, transmembrane potentials and Vmax were determined on each of the AV junctional tissues. Results showed that PNF had the lowest Vmax (2.5 V/sec), followed by AV node (7.0 V/sec) and HB (33 V/sec). This finding showed that PNF, and not the AV node, has the lowest Vmax, suggesting that the PNF has the lowest conductivity among the AV junctional tissues, and this study advances our understanding on the mechanism of AV conduction delay in dog hearts.

  10. Soliton excitations in Josephson tunnel junctions

    DEFF Research Database (Denmark)

    Lomdahl, P. S.; Sørensen, O. H.; Christiansen, Peter Leth

    1982-01-01

    on the Nth ZFS yields the frequency Nf1 Coexistence of two adjacent frequencies is found on the third ZFS of the longer junction (L / λJ=6) in a narrow range of bias current as also found in the experiments. Small asymmetries in the experimental environment, a weak magnetic field, e.g., is introduced via...

  11. Gap junction diseases of the skin.

    NARCIS (Netherlands)

    Steensel, M.A.M. van

    2004-01-01

    Gap junctions are intercellular channels that allow the passage of water, ions, and small molecules. They are involved in quick, short-range messaging between cells and are found in skin, nervous tissue, heart, and muscle. An increasing number of hereditary skin disorders appear to be caused by muta

  12. Fluxon Dynamics in Elliptic Annular Josephson Junctions

    DEFF Research Database (Denmark)

    Monaco, Roberto; Mygind, Jesper

    2016-01-01

    We analyze the dynamics of a magnetic flux quantum (current vortex) trapped in a current-biased long planar elliptic annular Josephson tunnel junction. The system is modeled by a perturbed sine-Gordon equation that determines the spatial and temporal behavior of the phase difference across the tu...

  13. Intercellular junctions in nerve-free hydra

    DEFF Research Database (Denmark)

    McDowall, A W; Grimmelikhuijzen, C J

    1980-01-01

    with particles in an "enplaque conformation appearing as a raised plateau on the E-face or as a depression on the P-face; (ii) structures morphologically similar to gap junctions in rat liver, containing particles on the P-face and corresponding pits on the E-face, both having hexagonal packing with a lattice...

  14. All-carbon molecular tunnel junctions.

    Science.gov (United States)

    Yan, Haijun; Bergren, Adam Johan; McCreery, Richard L

    2011-11-30

    This Article explores the idea of using nonmetallic contacts for molecular electronics. Metal-free, all-carbon molecular electronic junctions were fabricated by orienting a layer of organic molecules between two carbon conductors with high yield (>90%) and good reproducibility (rsd of current density at 0.5 V carbon devices exhibit current density-voltage (J-V) behavior similar to those with metallic Cu top contacts. However, the all-carbon devices display enhanced stability to bias extremes and greatly improved thermal stability. Completed carbon/nitroazobenzene(NAB)/carbon junctions can sustain temperatures up to 300 °C in vacuum for 30 min and can be scanned at ±1 V for at least 1.2 × 10(9) cycles in air at 100 °C without a significant change in J-V characteristics. Furthermore, these all-carbon devices can withstand much higher voltages and current densities than can Cu-containing junctions, which fail upon oxidation and/or electromigration of the copper. The advantages of carbon contacts stem mainly from the strong covalent bonding in the disordered carbon materials, which resists electromigration or penetration into the molecular layer, and provides enhanced stability. These results highlight the significance of nonmetallic contacts for molecular electronics and the potential for integration of all-carbon molecular junctions with conventional microelectronics.

  15. Mesh Currents and Josephson Junction Arrays

    OpenAIRE

    1995-01-01

    A simple but accurate mesh current analysis is performed on a XY model and on a SIMF model to derive the equations for a Josephson junction array. The equations obtained here turn out to be different from other equations already existing in the literature. Moreover, it is shown that the two models come from an unique hidden structure

  16. Requirements for a GaAsBi 1 eV sub-cell in a GaAs-based multi-junction solar cell

    Science.gov (United States)

    Thomas, T.; Mellor, A.; Hylton, N. P.; Führer, M.; Alonso-Álvarez, D.; Braun, A.; Ekins-Daukes, N. J.; David, J. P. R.; Sweeney, S. J.

    2015-09-01

    Multi-junction solar cells achieve high efficiency by stacking sub-cells of different bandgaps (typically GaInP/GaAs/Ge) resulting in efficiencies in excess of 40%. The efficiency can be improved by introducing a 1 eV absorber into the stack, either replacing Ge in a triple-junction configuration or on top of Ge in a quad-junction configuration. GaAs0.94Bi0.06 yields a direct-gap at 1 eV with only 0.7% strain on GaAs and the feasibility of the material has been demonstrated from GaAsBi photodetector devices. The relatively high absorption coefficient of GaAsBi suggests sufficient current can be generated to match the sub-cell photocurrent from the other sub-cells of a standard multi-junction solar cell. However, minority carrier transport and background doping levels place constraints on both p/n and p-i-n diode configurations. In the possible case of short minority carrier diffusion lengths we recommend the use of a p-i-n diode, and predict the material parameters that are necessary to achieve high efficiencies in a GaInP/GaAs/GaAsBi/Ge quad-junction cell.

  17. Zero-voltage nondegenerate parametric mode in Josephson tunnel junctions

    DEFF Research Database (Denmark)

    Pedersen, Niels Falsig

    1976-01-01

    A new parametric mode in a Josephson tunnel junction biased in the zero-voltage mode is suggested. It is a nondegenerate parametric excitation where the junction plasma resonance represents the input circuit, and a junction geometrical resonance represents the idler circuit. This nondegenerate mo...... for such a coupling. Journal of Applied Physics is copyrighted by The American Institute of Physics....

  18. Systematic study of shallow junction formation on germanium substrates

    DEFF Research Database (Denmark)

    Hellings, Geert; Rosseel, Erik; Clarysse, Trudo

    2011-01-01

    Published results on Ge junctions are benchmarked systematically using RS–XJ plots. The electrical activation level required to meet the ITRS targets is calculated. Additionally, new results are presented on shallow furnace-annealed B junctions and shallow laser-annealed As junctions. Co-implanti...

  19. Long Josephson Junction Stack Coupled to a Cavity

    DEFF Research Database (Denmark)

    Madsen, Søren Peder; Pedersen, Niels Falsig; Groenbech-Jensen, N.

    2007-01-01

    A stack of inductively coupled long Josephson junctions are modeled as a system of coupled sine-Gordon equations. One boundary of the stack is coupled electrically to a resonant cavity. With one fluxon in each Josephson junction, the inter-junction fluxon forces are repulsive. We look at a possible...

  20. Structure Stability of Ⅰ-Type Carbon Nanotube Junctions

    Institute of Scientific and Technical Information of China (English)

    夏丹; 袁喆; 李家明

    2002-01-01

    Carbon nanotubes with junctions may play an important role in future ‘nanoelectronics' and future ‘nano devices'.In particular, junctions constructed with metal and semiconducting nanotubes have potential applications. Basedon the orthogonal tight-binding molecular dynamics method, we present our study of the structure stability ofI-type carbon nanotube junctions.