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Sample records for large anisotropic magnetoresistance

  1. Tunneling anisotropic magnetoresistance driven by magnetic phase transition.

    Science.gov (United States)

    Chen, X Z; Feng, J F; Wang, Z C; Zhang, J; Zhong, X Y; Song, C; Jin, L; Zhang, B; Li, F; Jiang, M; Tan, Y Z; Zhou, X J; Shi, G Y; Zhou, X F; Han, X D; Mao, S C; Chen, Y H; Han, X F; Pan, F

    2017-09-06

    The independent control of two magnetic electrodes and spin-coherent transport in magnetic tunnel junctions are strictly required for tunneling magnetoresistance, while junctions with only one ferromagnetic electrode exhibit tunneling anisotropic magnetoresistance dependent on the anisotropic density of states with no room temperature performance so far. Here, we report an alternative approach to obtaining tunneling anisotropic magnetoresistance in α'-FeRh-based junctions driven by the magnetic phase transition of α'-FeRh and resultantly large variation of the density of states in the vicinity of MgO tunneling barrier, referred to as phase transition tunneling anisotropic magnetoresistance. The junctions with only one α'-FeRh magnetic electrode show a magnetoresistance ratio up to 20% at room temperature. Both the polarity and magnitude of the phase transition tunneling anisotropic magnetoresistance can be modulated by interfacial engineering at the α'-FeRh/MgO interface. Besides the fundamental significance, our finding might add a different dimension to magnetic random access memory and antiferromagnet spintronics.Tunneling anisotropic magnetoresistance is promising for next generation memory devices but limited by the low efficiency and functioning temperature. Here the authors achieved 20% tunneling anisotropic magnetoresistance at room temperature in magnetic tunnel junctions with one α'-FeRh magnetic electrode.

  2. Isothermal anisotropic magnetoresistance in antiferromagnetic metallic IrMn.

    Science.gov (United States)

    Galceran, R; Fina, I; Cisneros-Fernández, J; Bozzo, B; Frontera, C; López-Mir, L; Deniz, H; Park, K-W; Park, B-G; Balcells, Ll; Martí, X; Jungwirth, T; Martínez, B

    2016-10-20

    Antiferromagnetic spintronics is an emerging field; antiferromagnets can improve the functionalities of ferromagnets with higher response times, and having the information shielded against external magnetic field. Moreover, a large list of aniferromagnetic semiconductors and metals with Néel temperatures above room temperature exists. In the present manuscript, we persevere in the quest for the limits of how large can anisotropic magnetoresistance be in antiferromagnetic materials with very large spin-orbit coupling. We selected IrMn as a prime example of first-class moment (Mn) and spin-orbit (Ir) combination. Isothermal magnetotransport measurements in an antiferromagnetic-metal(IrMn)/ferromagnetic-insulator thin film bilayer have been performed. The metal/insulator structure with magnetic coupling between both layers allows the measurement of the modulation of the transport properties exclusively in the antiferromagnetic layer. Anisotropic magnetoresistance as large as 0.15% has been found, which is much larger than that for a bare IrMn layer. Interestingly, it has been observed that anisotropic magnetoresistance is strongly influenced by the field cooling conditions, signaling the dependence of the found response on the formation of domains at the magnetic ordering temperature.

  3. Ballistic Anisotropic Magnetoresistance of Single-Atom Contacts.

    Science.gov (United States)

    Schöneberg, J; Otte, F; Néel, N; Weismann, A; Mokrousov, Y; Kröger, J; Berndt, R; Heinze, S

    2016-02-10

    Anisotropic magnetoresistance, that is, the sensitivity of the electrical resistance of magnetic materials on the magnetization direction, is expected to be strongly enhanced in ballistic transport through nanoscale junctions. However, unambiguous experimental evidence of this effect is difficult to achieve. We utilize single-atom junctions to measure this ballistic anisotropic magnetoresistance (AMR). Single Co and Ir atoms are deposited on domains and domain walls of ferromagnetic Fe layers on W(110) to control their magnetization directions. They are contacted with nonmagnetic tips in a low-temperature scanning tunneling microscope to measure the junction conductances. Large changes of the magnetoresistance occur from the tunneling to the ballistic regime due to the competition of localized and delocalized d-orbitals, which are differently affected by spin-orbit coupling. This work shows that engineering the AMR at the single atom level is feasible.

  4. Anomalously large anisotropic magnetoresistance in a perovskite manganite

    Science.gov (United States)

    Li, Run-Wei; Wang, Huabing; Wang, Xuewen; Yu, X. Z.; Matsui, Y.; Cheng, Zhao-Hua; Shen, Bao-Gen; Plummer, E. Ward; Zhang, Jiandi

    2009-01-01

    The signature of correlated electron materials (CEMs) is the coupling between spin, charge, orbital and lattice resulting in exotic functionality. This complexity is directly responsible for their tunability. We demonstrate here that the broken symmetry, through cubic to orthorhombic distortion in the lattice structure in a prototype manganite single crystal, La0.69Ca0.31MnO3, leads to an anisotropic magneto-elastic response to an external field, and consequently to remarkable magneto-transport behavior. An anomalous anisotropic magnetoresistance (AMR) effect occurs close to the metal-insulator transition (MIT) in the system, showing a direct correlation with the anisotropic field-tuned MIT in the system and can be understood by means of a simple phenomenological model. A small crystalline anisotropy stimulates a “colossal” AMR near the MIT phase boundary of the system, thus revealing the intimate interplay between magneto- and electronic-crystalline couplings. PMID:19706504

  5. Anisotropic magnetoresistance in a Fermi glass

    International Nuclear Information System (INIS)

    Ovadyahu, Z.; Physics Department, Ben-Gurion University of the Negev, Beer-Sheva, Israel 84120)

    1986-01-01

    Insulating thin films of indium oxide exhibit negative, anisotropic magnetoresistance. The systematics of these results imply that the magnetoresistance mechanism may give different weight to the distribution of the localization lengths than that given by the hopping conductivity

  6. Temperature-Dependent Asymmetry of Anisotropic Magnetoresistance in Silicon p-n Junctions.

    Science.gov (United States)

    Yang, D Z; Wang, T; Sui, W B; Si, M S; Guo, D W; Shi, Z; Wang, F C; Xue, D S

    2015-09-01

    We report a large but asymmetric magnetoresistance in silicon p-n junctions, which contrasts with the fact of magnetoresistance being symmetric in magnetic metals and semiconductors. With temperature decreasing from 293 K to 100 K, the magnetoresistance sharply increases from 50% to 150% under a magnetic field of 2 T. At the same time, an asymmetric magnetoresistance, which manifests itself as a magnetoresistance voltage offset with respect to the sign of magnetic field, occurs and linearly increases with magnetoresistance. More interestingly, in contrast with other materials, the lineshape of anisotropic magnetoresistance in silicon p-n junctions significantly depends on temperature. As temperature decreases from 293 K to 100 K, the width of peak shrinks from 90° to 70°. We ascribe these novel magnetoresistance to the asymmetric geometry of the space charge region in p-n junction induced by the magnetic field. In the vicinity of the space charge region the current paths are deflected, contributing the Hall field to the asymmetric magnetoresistance. Therefore, the observed temperature-dependent asymmetry of magnetoresistance is proved to be a direct consequence of the spatial configuration evolution of space charge region with temperature.

  7. Large room-temperature tunneling anisotropic magnetoresistance and electroresistance in single ferromagnet/Nb:SrTiO3 Schottky devices.

    Science.gov (United States)

    Kamerbeek, Alexander M; Ruiter, Roald; Banerjee, Tamalika

    2018-01-22

    There is a large effort in research and development to realize electronic devices capable of storing information in new ways - for instance devices which simultaneously exhibit electro and magnetoresistance. However it remains a challenge to create devices in which both effects coexist. In this work we show that the well-known electroresistance in noble metal-Nb:SrTiO 3 Schottky junctions can be augmented by a magnetoresistance effect in the same junction. This is realized by replacing the noble metal electrode with ferromagnetic Co. This magnetoresistance manifests as a room temperature tunneling anisotropic magnetoresistance (TAMR). The maximum room temperature TAMR (1.6%) is significantly larger and robuster with bias than observed earlier, not using Nb:SrTiO 3 . In a different set of devices, a thin amorphous AlO x interlayer inserted between Co and Nb:SrTiO 3 , reduces the TAMR by more than 2 orders of magnitude. This points to the importance of intimate contact between the Co and Nb:SrTiO 3 for the TAMR effect. This is explained by electric field enhanced spin-orbit coupling of the interfacial Co layer in contact with Nb:SrTiO 3 . We propose that the large TAMR likely has its origin in the 3d orbital derived conduction band and large relative permittivity of Nb:SrTiO 3 and discuss ways to further enhance the TAMR.

  8. Extremely large and significantly anisotropic magnetoresistance in ZrSiS single crystals

    Energy Technology Data Exchange (ETDEWEB)

    Lv, Yang-Yang; Zhang, Bin-Bin; Yao, Shu-Hua, E-mail: shyao@nju.edu.cn, E-mail: ybchen@nju.edu.cn, E-mail: zhoujian@nju.edu.cn; Zhou, Jian, E-mail: shyao@nju.edu.cn, E-mail: ybchen@nju.edu.cn, E-mail: zhoujian@nju.edu.cn; Zhang, Shan-Tao; Lu, Ming-Hui [National Laboratory of Solid State Microstructures and Department of Materials Science and Engineering, Nanjing University, Nanjing 210093 (China); Li, Xiao; Chen, Y. B., E-mail: shyao@nju.edu.cn, E-mail: ybchen@nju.edu.cn, E-mail: zhoujian@nju.edu.cn [National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093 (China); Chen, Yan-Feng [National Laboratory of Solid State Microstructures and Department of Materials Science and Engineering, Nanjing University, Nanjing 210093 (China); Collaborative Innovation Center of Advanced Microstructure, Nanjing University, Nanjing 210093 (China)

    2016-06-13

    Recently, the extremely large magnetoresistance (MR) observed in transition metal telluride, like WTe{sub 2}, attracted much attention because of the potential applications in magnetic sensor. Here, we report the observation of extremely large magnetoresistance as 3.0 × 10{sup 4}% measured at 2 K and 9 T magnetic field aligned along [001]-ZrSiS. The significant magnetoresistance change (∼1.4 × 10{sup 4}%) can be obtained when the magnetic field is titled from [001] to [011]-ZrSiS. These abnormal magnetoresistance behaviors in ZrSiS can be understood by electron-hole compensation and the open orbital of Fermi surface. Because of these superior MR properties, ZrSiS may be used in the magnetic sensors.

  9. Tunneling anisotropic magnetoresistance in Co/AIOx/Al tunnel junctions with fcc Co (111) electrodes

    NARCIS (Netherlands)

    Wang, Kai; Tran, T. Lan Ahn; Brinks, Peter; Brinks, P.; Sanderink, Johannes G.M.; Bolhuis, Thijs; van der Wiel, Wilfred Gerard; de Jong, Machiel Pieter

    2013-01-01

    Tunneling anisotropic magnetoresistance (TAMR) has been characterized in junctions comprised of face-centered cubic (fcc) Co (111) ferromagnetic electrodes grown epitaxially on sapphire substrates, amorphous AlOx tunnel barriers, and nonmagnetic Al counterelectrodes. Large TAMR ratios have been

  10. Tunneling anisotropic magnetoresistance via molecular π orbitals of Pb dimers

    Science.gov (United States)

    Schöneberg, Johannes; Ferriani, Paolo; Heinze, Stefan; Weismann, Alexander; Berndt, Richard

    2018-01-01

    Pb dimers on a ferromagnetic surface are shown to exhibit large tunneling anisotropic magnetoresistance (TAMR) due to molecular π orbitals. Dimers oriented differently with respect to the magnetization directions of a ferromagnetic Fe double layer on W(110) were made with a scanning tunneling microscope. Depending on the dimer orientations, TAMR is absent or as large as 20% at the Fermi level. General arguments and first-principles calculations show that mixing of molecular orbitals due to spin-orbit coupling, which leads to TAMR, is maximal when the magnetization is oriented parallel to the dimer axis.

  11. Giant anisotropic magnetoresistance and planar Hall effect in the Dirac semimetal Cd3As2

    Science.gov (United States)

    Li, Hui; Wang, Huan-Wen; He, Hongtao; Wang, Jiannong; Shen, Shun-Qing

    2018-05-01

    Anisotropic magnetoresistance is the change tendency of resistance of a material on the mutual orientation of the electric current and the external magnetic field. Here, we report experimental observations in the Dirac semimetal Cd3As2 of giant anisotropic magnetoresistance and its transverse version, called the planar Hall effect. The relative anisotropic magnetoresistance is negative and up to -68% at 2 K and 10 T. The high anisotropy and the minus sign in this isotropic and nonmagnetic material are attributed to a field-dependent current along the magnetic field, which may be induced by the Berry curvature of the band structure. This observation not only reveals unusual physical phenomena in Weyl and Dirac semimetals, but also finds additional transport signatures of Weyl and Dirac fermions other than negative magnetoresistance.

  12. Anisotropic magnetoresistance and thermodynamic fluctuations in high-temperature superconductors

    International Nuclear Information System (INIS)

    Heine, G.

    1999-05-01

    Measurements of the in-plane and out-of-plane resistivity and the transverse and longitudinal in-plane and out-of-plane magnetoresistance above T, are reported in the high-temperature superconductors Bi2Sr2CaCu208+' and YBa2CU307 b . The carrier concentration of the Bi2Sr2CaCu208+' single crystals covers a broad range of the phase diagram from the slightly under doped to the moderately over doped region. The doping concentration of the thin films ranges from strongly under doped to optimally doped. The in-plane resistivities obey a metallic-like temperature dependence with a positive magnetoresistance in the transverse and the longitudinal orientation of the magnetic field. The out-of-plane resistivities show an activated behavior above T, with a metallic region at higher temperatures and negative magnetoresistance. The data were analyzed in the framework of a model for superconducting order parameter fluctuations. The positive in-plane magnetoresistance of the highly anisotropic Bi2Sr2CaCu208+x single crystals is interpreted as the suppression of the fluctuation-conductivity enhancement including orbital and spin contributions, whereas the negative magnetoresistance arises from the reduction of the fluctuation-induced pseudogap in the single-electron density-of-states by the magnetic field. For higher temperatures a transition to the normal-state magnetoresistance occurs for the in-plane transport. In the less anisotropic YBa2CU307 b thin films the positive out-of-plane magnetoresistance near T, changes sign to a negative magnetoresistance at higher temperatures. This behavior is also consistent with predictions from the theory of thermodynamic order-parameter fluctuations. The agreement of the fluctuation theory with the experimental findings is excellent for samples from the over doped side of the phase diagram, but deteriorate with decreasing carrier concentration. This behavior is interpreted by the dominating d-wave symmetry of the superconducting order

  13. Anisotropic magnetoresistance components in (Ga,Mn)As.

    Science.gov (United States)

    Rushforth, A W; Výborný, K; King, C S; Edmonds, K W; Campion, R P; Foxon, C T; Wunderlich, J; Irvine, A C; Vasek, P; Novák, V; Olejník, K; Sinova, Jairo; Jungwirth, T; Gallagher, B L

    2007-10-05

    We explore the basic physical origins of the noncrystalline and crystalline components of the anisotropic magnetoresistance (AMR) in (Ga,Mn)As. The sign of the noncrystalline AMR is found to be determined by the form of spin-orbit coupling in the host band and by the relative strengths of the nonmagnetic and magnetic contributions to the Mn impurity potential. We develop experimental methods yielding directly the noncrystalline and crystalline AMR components which are then analyzed independently. We report the observation of an AMR dominated by a large uniaxial crystalline component and show that AMR can be modified by local strain relaxation. Generic implications of our findings for other dilute moment systems are discussed.

  14. Tunnelling anisotropic magnetoresistance at La_0_._6_7Sr_0_._3_3MnO_3-graphene interfaces

    International Nuclear Information System (INIS)

    Phillips, L. C.; Yan, W.; Kar-Narayan, S.; Mathur, N. D.; Lombardo, A.; Barbone, M.; Milana, S.; Ferrari, A. C.; Ghidini, M.; Hämäläinen, S. J.; Dijken, S. van

    2016-01-01

    Using ferromagnetic La_0_._6_7Sr_0_._3_3MnO_3 electrodes bridged by single-layer graphene, we observe magnetoresistive changes of ∼32–35 MΩ at 5 K. Magneto-optical Kerr effect microscopy at the same temperature reveals that the magnetoresistance arises from in-plane reorientations of electrode magnetization, evidencing tunnelling anisotropic magnetoresistance at the La_0_._6_7Sr_0_._3_3MnO_3-graphene interfaces. Large resistance switching without spin transport through the non-magnetic channel could be attractive for graphene-based magnetic-sensing applications.

  15. Tunneling anisotropic magnetoresistance: A spin-valve-like tunnel magnetoresistance using a single magnetic layer

    Czech Academy of Sciences Publication Activity Database

    Gould, C.; Rüster, C.; Jungwirth, Tomáš; Girgis, E.; Schott, G. M.; Giraud, R.; Brunner, K.; Schmidt, G.; Molenkamp, L. W.

    2004-01-01

    Roč. 93, č. 11 (2004), 117203/1-117203/4 ISSN 0031-9007 R&D Projects: GA ČR GA202/02/0912 Institutional research plan: CEZ:AV0Z1010914 Keywords : semiconductor spintronics * tunneling anisotropic magnetoresistance Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 7.218, year: 2004

  16. Anisotropic Magnetoresistance in Antiferromagnetic Sr_{2}IrO_{4}

    Directory of Open Access Journals (Sweden)

    C. Wang

    2014-11-01

    Full Text Available We report point-contact measurements of anisotropic magnetoresistance (AMR in a single crystal of antiferromagnetic Mott insulator Sr_{2}IrO_{4}. The point-contact technique is used here as a local probe of magnetotransport properties on the nanoscale. The measurements at liquid nitrogen temperature reveal negative magnetoresistances (up to 28% for modest magnetic fields (250 mT applied within the IrO_{2} a-b plane and electric currents flowing perpendicular to the plane. The angular dependence of magnetoresistance shows a crossover from fourfold to twofold symmetry in response to an increasing magnetic field with angular variations in resistance from 1% to 14%. We tentatively attribute the fourfold symmetry to the crystalline component of AMR and the field-induced transition to the effects of applied field on the canting of antiferromagnetic-coupled moments in Sr_{2}IrO_{4}. The observed AMR is very large compared to the crystalline AMRs in 3d transition metal alloys or oxides (0.1%–0.5% and can be associated with the large spin-orbit interactions in this 5d oxide while the transition provides evidence of correlations between electronic transport, magnetic order, and orbital states. The finding of this work opens an entirely new avenue to not only gain a new insight into physics associated with spin-orbit coupling but also to better harness the power of spintronics in a more technically favorable fashion.

  17. Tunnelling anisotropic magnetoresistance due to antiferromagnetic CoO tunnel barriers

    NARCIS (Netherlands)

    Wang, Kai; Sanderink, Johannes G.M.; Bolhuis, Thijs; van der Wiel, Wilfred Gerard; de Jong, Machiel Pieter

    2015-01-01

    A new approach in spintronics is based on spin-polarized charge transport phenomena governed by antiferromagnetic (AFM) materials. Recent studies have demonstrated the feasibility of this approach for AFM metals and semiconductors. We report tunneling anisotropic magnetoresistance (TAMR) due to the

  18. Anisotropic magnetoresistance components in (Ga,Mn)As

    Czech Academy of Sciences Publication Activity Database

    Rushforth, A.W.; Výborný, Karel; King, C.S.; Edmonds, K. W.; Campion, R. P.; Foxon, C. T.; Wunderlich, J.; Irvine, A.C.; Vašek, Petr; Novák, Vít; Olejník, Kamil; Sinova, J.; Jungwirth, Tomáš; Gallagher, B. L.

    2007-01-01

    Roč. 99, č. 14 (2007), 147207/1-147207/4 ISSN 0031-9007 R&D Projects: GA ČR GA202/05/0575; GA ČR GA202/04/1519; GA ČR GEFON/06/E002; GA MŠk LC510 Grant - others:UK(GB) GR/S81407/01 Institutional research plan: CEZ:AV0Z10100521 Keywords : ferromagnetic semiconductors * anisotropic magnetoresistence Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 6.944, year: 2007

  19. Anisotropic magnetoresistance of GaMnAs ferromagnetic semiconductors

    Czech Academy of Sciences Publication Activity Database

    Vašek, Petr; Svoboda, Pavel; Novák, Vít; Cukr, Miroslav; Výborný, Karel; Jurka, Vlastimil; Stuchlík, Jiří; Orlita, Milan; Maude, D. K.

    2010-01-01

    Roč. 23, č. 6 (2010), 1161-1163 ISSN 1557-1939 R&D Projects: GA AV ČR KAN400100652; GA MŠk MEB020928 Grant - others:EU EuroMagNET II(XE) Egide 19535NF Institutional research plan: CEZ:AV0Z10100521 Keywords : GaMnAs * anisotropic magnetoresistance * hydrogenation Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.014, year: 2010

  20. Strain effects on anisotropic magnetoresistance in a nanowire spin valve

    Science.gov (United States)

    Hossain, Md I.; Maksud, M.; Subramanian, A.; Atulasimha, J.; Bandyopadhyay, S.

    2016-11-01

    The longitudinal magnetoresistance of a copper nanowire contacted by two cobalt contacts shows broad spin-valve peaks at room temperature. However, when the contacts are slightly heated, the peaks change into troughs which are signature of anisotropic magnetoresistance (AMR). Under heating, the differential thermal expansion of the contacts and the substrate generates a small strain in the cobalt contacts which enhances the AMR effect sufficiently to change the peak into a trough. This shows the extreme sensitivity of AMR to strain. The change in the AMR resistivity coefficient due to strain is estimated to be a few m Ω -m/microstrain.

  1. Measurement and simulation of anisotropic magnetoresistance in single GaAs/MnAs core/shell nanowires

    International Nuclear Information System (INIS)

    Liang, J.; Wang, J.; Cooley, B. J.; Rench, D. W.; Samarth, N.; Paul, A.; Dellas, N. S.; Mohney, S. E.; Engel-Herbert, R.

    2012-01-01

    We report four probe measurements of the low field magnetoresistance (MR) in single core/shell GaAs/MnAs nanowires (NWs) synthesized by molecular beam epitaxy, demonstrating clear signatures of anisotropic magnetoresistance that track the field-dependent magnetization. A comparison with micromagnetic simulations reveals that the principal characteristics of the magnetoresistance data can be unambiguously attributed to the nanowire segments with a zinc blende GaAs core. The direct correlation between magnetoresistance, magnetization, and crystal structure provides a powerful means of characterizing individual hybrid ferromagnet/semiconductor nanostructures.

  2. Boltzmann theory of engineered anisotropic magnetoresistance in (Ga, Mn)As

    Czech Academy of Sciences Publication Activity Database

    Jungwirth, Tomáš; Abolfath, M.; Sinova, J.; Kučera, Jan; MacDonald, A. H.

    2002-01-01

    Roč. 81, č. 21 (2002), s. 4029-4031 ISSN 0003-6951 R&D Projects: GA ČR GA202/02/0912; GA MŠk OC P5.10 Institutional research plan: CEZ:AV0Z1010914 Keywords : ferromagnetic semiconductors * anisotropic magnetoresistence Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 4.207, year: 2002

  3. Strain driven anisotropic magnetoresistance in antiferromagnetic La$_{0.4}$Sr$_{0.6}$MnO$_{3}$

    OpenAIRE

    Wong, A. T.; Beekman, C.; Guo, H.; Siemons, W.; Gai, Z.; Arenholz, E.; Takamura, Y.; Ward, T. Z.

    2014-01-01

    We investigate the effects of strain on antiferromagnetic (AFM) single crystal thin films of La 1-x Sr x MnO 3 (x = 0.6). Nominally unstrained samples have strong magnetoresistance with anisotropic magnetoresistances (AMR) of up to 8%. Compressive strain suppresses magnetoresistance but generates AMR values of up to 63%. Tensile strain presents the only case of a metal-insulator transition and demonstrates a previously unreported AMR behavior. In all three cases, we find evidence of magnetic...

  4. Multiple-stable anisotropic magnetoresistance memory in antiferromagnetic MnTe

    Czech Academy of Sciences Publication Activity Database

    Kriegner, D.; Výborný, Karel; Olejník, Kamil; Reichlová, Helena; Novák, Vít; Martí, Xavier; Gazquez, J.; Saidl, V.; Němec, P.; Volobuev, V.V.; Springholz, G.; Holý, V.; Jungwirth, Tomáš

    2016-01-01

    Roč. 7, Jun (2016), 1-7, č. článku 11623. ISSN 2041-1723 R&D Projects: GA ČR GA15-13436S; GA MŠk(CZ) LM2011026; GA ČR GB14-37427G EU Projects: European Commission(XE) 268066 - 0MSPIN Institutional support: RVO:68378271 Keywords : antiferromagnets * spintronics * anisotropic magnetoresistance Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 12.124, year: 2016

  5. Huge tunnelling anisotropic magnetoresistance in (Ga,Mn)As nanoconstrictions

    Czech Academy of Sciences Publication Activity Database

    Giddings, A.D.; Makarovsky, O. N.; Khalid, M.N.; Yasin, S.; Edmonds, K. W.; Campion, R. P.; Wunderlich, J.; Jungwirth, Tomáš; Williams, D.A.; Gallagher, B. L.; Foxon, C. T.

    2008-01-01

    Roč. 10, č. 8 (2008), 085004/1-085004/9 ISSN 1367-2630 R&D Projects: GA ČR GEFON/06/E002; GA MŠk LC510; GA ČR GA202/05/0575; GA ČR GA202/04/1519 EU Projects: European Commission(XE) 015728 - NANOSPIN Institutional research plan: CEZ:AV0Z10100521 Keywords : ferromagnetic semiconductor * nanoconstriction * tunneling anisotropic magnetoresistance , Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.440, year: 2008

  6. Anisotropic giant magnetoresistance in NbSb2

    Science.gov (United States)

    Wang, Kefeng; Graf, D.; Li, Lijun; Wang, Limin; Petrovic, C.

    2014-01-01

    The magnetic field response of the transport properties of novel materials and then the large magnetoresistance effects are of broad importance in both science and application. We report large transverse magnetoreistance (the magnetoresistant ratio ~ 1.3 × 105% in 2 K and 9 T field, and 4.3 × 106% in 0.4 K and 32 T field, without saturation) and field-induced metal-semiconductor-like transition, in NbSb2 single crystal. Magnetoresistance is significantly suppressed but the metal-semiconductor-like transition persists when the current is along the ac-plane. The sign reversal of the Hall resistivity and Seebeck coefficient in the field, plus the electronic structure reveal the coexistence of a small number of holes with very high mobility and a large number of electrons with low mobility. The large MR is attributed to the change of the Fermi surface induced by the magnetic field which is related to the Dirac-like point, in addition to orbital MR expected for high mobility metals. PMID:25476239

  7. Highly Sensitive Flexible Magnetic Sensor Based on Anisotropic Magnetoresistance Effect.

    Science.gov (United States)

    Wang, Zhiguang; Wang, Xinjun; Li, Menghui; Gao, Yuan; Hu, Zhongqiang; Nan, Tianxiang; Liang, Xianfeng; Chen, Huaihao; Yang, Jia; Cash, Syd; Sun, Nian-Xiang

    2016-11-01

    A highly sensitive flexible magnetic sensor based on the anisotropic magnetoresistance effect is fabricated. A limit of detection of 150 nT is observed and excellent deformation stability is achieved after wrapping of the flexible sensor, with bending radii down to 5 mm. The flexible AMR sensor is used to read a magnetic pattern with a thickness of 10 μm that is formed by ferrite magnetic inks. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  8. Tunneling anisotropic magnetoresistance in single-molecule magnet junctions

    Science.gov (United States)

    Xie, Haiqing; Wang, Qiang; Jiao, Hujun; Liang, J.-Q.

    2012-08-01

    We theoretically investigate quantum transport through single-molecule magnet (SMM) junctions with ferromagnetic and normal-metal leads in the sequential regime. The current obtained by means of the rate-equation gives rise to the tunneling anisotropic magnetoresistance (TAMR), which varies with the angle between the magnetization direction of ferromagnetic lead and the easy axis of SMM. The angular dependence of TAMR can serve as a probe to determine experimentally the easy axis of SMM. Moreover, it is demonstrated that both the magnitude and the sign of TAMR are tunable by the bias voltage, suggesting a new spin-valve device with only one magnetic electrode in molecular spintronics.

  9. Anisotropic magnetoresistance and tunneling magnetoresistance of conducting filaments in NiO with different resistance states

    Science.gov (United States)

    Zhao, Diyang; Qiao, Shuang; Luo, Yuxiang; Chen, Aitian; Zhang, Pengfei; Zheng, Ping; Sun, Zhong; Guo, Minghua; Chiang, F.-K.; Wu, Jian; Luo, Jianlin; Li, Jianqi; Wang, Yayu; Zhao, Yonggang; Tsinghua University Team; Chinese Academy of Sciences Collaboration

    Resistive switching (RS) effect in conductor/insulator/conductor thin-film stacks has attracted much attention due to its interesting physics and potentials for applications. NiO is one of the most representative systems and its RS effect has been generally explained by the formation and rupture of Ni related conducting filaments, which are very unique since they are formed by electric forming process. We study the MR behaviors in NiO RS films with different resistance states. Rich and interesting MR behaviors were observed, including the normal and anomalous anisotropic magnetoresistance (AMR) and tunneling magnetoresistance (TMR), etc., which provide new insights into the nature of the filaments and their evolution in the resistive switching process. First-principles calculation reveals the essential role of oxygen migration into the filaments during the RESET process and can account for the experimental results. Our work provides a new avenue for the exploration of the conducting filaments in RS materials, and is significant for understanding the RS mechanism as well as multifunctional device design.

  10. Anisotropic Magnetoresistance and Anisotropic Tunneling Magnetoresistance due to Quantum Interference in Ferromagnetic Metal Break Junctions

    DEFF Research Database (Denmark)

    Bolotin, Kirill; Kuemmeth, Ferdinand; Ralph, D

    2006-01-01

    We measure the low-temperature resistance of permalloy break junctions as a function of contact size and the magnetic field angle in applied fields large enough to saturate the magnetization. For both nanometer-scale metallic contacts and tunneling devices we observe large changes in resistance w...... with the angle, as large as 25% in the tunneling regime. The pattern of magnetoresistance is sensitive to changes in bias on a scale of a few mV. We interpret the effect as a consequence of conductance fluctuations due to quantum interference....

  11. Anisotropic magnetoresistance and piezoelectric effect in GaAs Hall samples

    Science.gov (United States)

    Ciftja, Orion

    2017-02-01

    Application of a strong magnetic field perpendicular to a two-dimensional electron system leads to a variety of quantum phases ranging from incompressible quantum Hall liquid to Wigner solid, charge density wave, and exotic non-Abelian states. A few quantum phases seen in past experiments on GaAs Hall samples of electrons show pronounced anisotropic magnetoresistance values at certain weak magnetic fields. We argue that this might be due to the piezoelectric effect that is inherent in a semiconductor host such as GaAs. Such an effect has the potential to create a sufficient in-plane internal strain that will be felt by electrons and will determine the direction of high and low resistance. When Wigner solid, charge density wave, and isotropic liquid phases are very close in energy, the overall stability of the system is very sensitive to local order and, thus, can be strongly influenced even by a weak perturbation such as the piezoelectric-induced effective electron-electron interaction, which is anisotropic. In this work, we argue that an anisotropic interaction potential may stabilize anisotropic liquid phases of electrons even in a strong magnetic field regime where normally one expects to see only isotropic quantum Hall or isotropic Fermi liquid states. We use this approach to support a theoretical framework that envisions the possibility of an anisotropic liquid crystalline state of electrons in the lowest Landau level. In particular, we argue that an anisotropic liquid state of electrons may stabilize in the lowest Landau level close to the liquid-solid transition region at filling factor ν =1 /6 for a given anisotropic Coulomb interaction potential. Quantum Monte Carlo simulations for a liquid crystalline state with broken rotational symmetry indicate stability of liquid crystalline order consistent with the existence of an anisotropic liquid state of electrons stabilized by anisotropy at filling factor ν =1 /6 of the lowest Landau level.

  12. Experimental investigation of the nature of the magnetoresistance effects in Pd-YIG hybrid structures.

    Science.gov (United States)

    Lin, Tao; Tang, Chi; Alyahayaei, Hamad M; Shi, Jing

    2014-07-18

    In bilayers consisting of Pd and yttrium iron garnet (Y(3)Fe(5)O(12) or YIG), we observe vanishingly small room-temperature conventional anisotropic magnetoresistance but large new magnetoresistance that is similar to the spin Hall magnetoresistance previously reported in Pt-YIG bilayers. We report a temperature dependence study of the two magnetoresistance effects in Pt-YIG bilayers. As the temperature is decreased, the new magnetoresistance shows a peak, whereas the anisotropic magnetoresistance effect starts to appear and increases monotonically. We find that the magnetoresistance peak shifts to lower temperatures in thicker Pd samples, a feature characteristic of the spin current effect. The distinct temperature dependence reveals fundamentally different mechanisms responsible for the two effects in such hybrid structures.

  13. Large, non-saturating magnetoresistance in WTe2.

    Science.gov (United States)

    Ali, Mazhar N; Xiong, Jun; Flynn, Steven; Tao, Jing; Gibson, Quinn D; Schoop, Leslie M; Liang, Tian; Haldolaarachchige, Neel; Hirschberger, Max; Ong, N P; Cava, R J

    2014-10-09

    Magnetoresistance is the change in a material's electrical resistance in response to an applied magnetic field. Materials with large magnetoresistance have found use as magnetic sensors, in magnetic memory, and in hard drives at room temperature, and their rarity has motivated many fundamental studies in materials physics at low temperatures. Here we report the observation of an extremely large positive magnetoresistance at low temperatures in the non-magnetic layered transition-metal dichalcogenide WTe2: 452,700 per cent at 4.5 kelvins in a magnetic field of 14.7 teslas, and 13 million per cent at 0.53 kelvins in a magnetic field of 60 teslas. In contrast with other materials, there is no saturation of the magnetoresistance value even at very high applied fields. Determination of the origin and consequences of this effect, and the fabrication of thin films, nanostructures and devices based on the extremely large positive magnetoresistance of WTe2, will represent a significant new direction in the study of magnetoresistivity.

  14. Coulomb Blockade Anisotropic Magnetoresistance Effect in a (Ga,Mn)As Single-Electron Transistor

    Czech Academy of Sciences Publication Activity Database

    Wunderlich, J.; Jungwirth, Tomáš; Kaestner, B.; Irvine, A.C.; Shick, Alexander; Stone, N.; Wang, K. Y.; Rana, U.; Giddings, A.D.; Foxon, C. T.; Campion, R. P.; Williams, D.A.; Gallagher, B. L.

    2006-01-01

    Roč. 97, č. 7 (2006), 077201/1-077201/4 ISSN 0031-9007 R&D Projects: GA ČR GA202/05/0575; GA MŠk LC510 Grant - others:EPSRC(GB) GR/S81407/01 Institutional research plan: CEZ:AV0Z10100521 Keywords : anisotropic magnetoresistance * Coulomb blockade * single electron transistor Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 7.072, year: 2006

  15. Large rectification magnetoresistance in nonmagnetic Al/Ge/Al heterojunctions.

    Science.gov (United States)

    Zhang, Kun; Li, Huan-Huan; Grünberg, Peter; Li, Qiang; Ye, Sheng-Tao; Tian, Yu-Feng; Yan, Shi-Shen; Lin, Zhao-Jun; Kang, Shi-Shou; Chen, Yan-Xue; Liu, Guo-Lei; Mei, Liang-Mo

    2015-09-21

    Magnetoresistance and rectification are two fundamental physical properties of heterojunctions and respectively have wide applications in spintronics devices. Being different from the well known various magnetoresistance effects, here we report a brand new large magnetoresistance that can be regarded as rectification magnetoresistance: the application of a pure small sinusoidal alternating-current to the nonmagnetic Al/Ge Schottky heterojunctions can generate a significant direct-current voltage, and this rectification voltage strongly varies with the external magnetic field. We find that the rectification magnetoresistance in Al/Ge Schottky heterojunctions is as large as 250% at room temperature, which is greatly enhanced as compared with the conventional magnetoresistance of 70%. The findings of rectification magnetoresistance open the way to the new nonmagnetic Ge-based spintronics devices of large rectification magnetoresistance at ambient temperature under the alternating-current due to the simultaneous implementation of the rectification and magnetoresistance in the same devices.

  16. The relationship between anisotropic magnetoresistance and topology of Fermi surface in Td-MoTe2 crystal

    Science.gov (United States)

    Lv, Yang-Yang; Li, Xiao; Pang, Bin; Cao, Lin; Lin, Dajun; Zhang, Bin-Bin; Yao, Shu-Hua; Chen, Y. B.; Zhou, Jian; Dong, Song-Tao; Zhang, Shan-Tao; Lu, Ming-Hui; Chen, Yan-Feng

    2017-07-01

    Layered transition-metal dichalcogenides have been recently attracted a lot of attention because of their unique physical properties, such as extremely large and anisotropic magnetoresistance (MR) in WTe2. In this work, we observed the abnormally anisotropic MR on Td-MoTe2 crystal that is strongly dependent on the temperature, as well as the orientations of both magnetic field B and electric field E with respect to crystallographic axes of Td-MoTe2. When E//a-axis and B//c-axis, MR is parabolically dependent on B and is as high as 520% under 9 T and 2 K conditions; the MR is quasi-linearly dependent on B when E//a-axis and B//b-axis (E//b-axis and B//c-axis), and the corresponding MR is only 130% (220%); MR is initially parabolically dependent on B, then linearly on B, and finally shows a saturate trend under E//B//a-axis (or E//B//b-axis) conditions, and the MR is about 16% (30%). These anisotropic MR behaviors can be qualitatively explained by the features of the Fermi surface of Td-MoTe2. This work may demonstrate the rich anisotropic physical behavior in layered transition-metal dichalcognides.

  17. Fractional Modeling of the AC Large-Signal Frequency Response in Magnetoresistive Current Sensors

    Directory of Open Access Journals (Sweden)

    Sergio Iván Ravelo Arias

    2013-12-01

    Full Text Available Fractional calculus is considered when derivatives and integrals of non-integer order are applied over a specific function. In the electrical and electronic domain, the transfer function dependence of a fractional filter not only by the filter order n, but additionally, of the fractional order α is an example of a great number of systems where its input-output behavior could be more exactly modeled by a fractional behavior. Following this aim, the present work shows the experimental ac large-signal frequency response of a family of electrical current sensors based in different spintronic conduction mechanisms. Using an ac characterization set-up the sensor transimpedance function  is obtained considering it as the relationship between sensor output voltage and input sensing current,[PLEASE CHECK FORMULA IN THE PDF]. The study has been extended to various magnetoresistance sensors based in different technologies like anisotropic magnetoresistance (AMR, giant magnetoresistance (GMR, spin-valve (GMR-SV and tunnel magnetoresistance (TMR. The resulting modeling shows two predominant behaviors, the low-pass and the inverse low-pass with fractional index different from the classical integer response. The TMR technology with internal magnetization offers the best dynamic and sensitivity properties opening the way to develop actual industrial applications.

  18. Large, Tunable Magnetoresistance in Nonmagnetic III-V Nanowires.

    Science.gov (United States)

    Li, Sichao; Luo, Wei; Gu, Jiangjiang; Cheng, Xiang; Ye, Peide D; Wu, Yanqing

    2015-12-09

    Magnetoresistance, the modulation of resistance by magnetic fields, has been adopted and continues to evolve in many device applications including hard-disk, memory, and sensors. Magnetoresistance in nonmagnetic semiconductors has recently raised much attention and shows great potential due to its large magnitude that is comparable or even larger than magnetic materials. However, most of the previous work focus on two terminal devices with large dimensions, typically of micrometer scales, which severely limit their performance potential and more importantly, scalability in commercial applications. Here, we investigate magnetoresistance in the impact ionization region in InGaAs nanowires with 20 nm diameter and 40 nm gate length. The deeply scaled dimensions of these nanowires enable high sensibility with less power consumption. Moreover, in these three terminal devices, the magnitude of magnetoresistance can be tuned by the transverse electric field controlled by gate voltage. Large magnetoresistance between 100% at room temperature and 2000% at 4.3 K can be achieved at 2.5 T. These nanoscale devices with large magnetoresistance offer excellent opportunity for future high-density large-scale magneto-electric devices using top-down fabrication approaches, which are compatible with commercial silicon platform.

  19. Large magnetoresistance effect in nitrogen-doped silicon

    Directory of Open Access Journals (Sweden)

    Tao Wang

    2017-05-01

    Full Text Available In this work, we reported a large magnetoresistance effect in silicon by ion implantation of nitrogen atoms. At room temperature, the magnetoresistance of silicon reaches 125 % under magnetic field 1.7 T and voltage bias -80 V. By applying an alternating magnetic field with a frequency (f of 0.008 Hz, we find that the magnetoresistance of silicon is divided into f and 2f two signal components, which represent the linear and quadratic magnetoresistance effects, respectively. The analysis based on tuning the magnetic field and the voltage bias reveals that electric-field-induced space-charge effect plays an important role to enhance both the linear and quadratic magnetoresistance effects. Observation as well as a comprehensive explanation of large MR in silicon, especially based on semiconductor CMOS implantation technology, will be an important progress towards magnetoelectronic applications.

  20. Tunnelling anisotropic magnetoresistance due to antiferromagnetic CoO tunnel barriers

    Science.gov (United States)

    Wang, K.; Sanderink, J. G. M.; Bolhuis, T.; van der Wiel, W. G.; de Jong, M. P.

    2015-01-01

    A new approach in spintronics is based on spin-polarized charge transport phenomena governed by antiferromagnetic (AFM) materials. Recent studies have demonstrated the feasibility of this approach for AFM metals and semiconductors. We report tunneling anisotropic magnetoresistance (TAMR) due to the rotation of antiferromagnetic moments of an insulating CoO layer, incorporated into a tunnel junction consisting of sapphire(substrate)/fcc-Co/CoO/AlOx/Al. The ferromagnetic Co layer is exchange coupled to the AFM CoO layer and drives rotation of the AFM moments in an external magnetic field. The results may help pave the way towards the development of spintronic devices based on AFM insulators. PMID:26486931

  1. Single atom anisotropic magnetoresistance on a topological insulator surface

    KAUST Repository

    Narayan, Awadhesh

    2015-03-12

    © 2015 IOP Publishing Ltd and Deutsche Physikalische Gesellschaft. We demonstrate single atom anisotropic magnetoresistance on the surface of a topological insulator, arising from the interplay between the helical spin-momentum-locked surface electronic structure and the hybridization of the magnetic adatom states. Our first-principles quantum transport calculations based on density functional theory for Mn on Bi2Se3 elucidate the underlying mechanism. We complement our findings with a two dimensional model valid for both single adatoms and magnetic clusters, which leads to a proposed device setup for experimental realization. Our results provide an explanation for the conflicting scattering experiments on magnetic adatoms on topological insulator surfaces, and reveal the real space spin texture around the magnetic impurity.

  2. Microscopic mechanism of the noncrystalline anisotropic magnetoresistance in (Ga,Mn)As

    Czech Academy of Sciences Publication Activity Database

    Výborný, Karel; Kučera, Jan; Sinova, J.; Rushforth, A.W.; Gallagher, B. L.; Jungwirth, Tomáš

    2009-01-01

    Roč. 80, č. 16 (2009), 165204/1-165204/8 ISSN 1098-0121 R&D Projects: GA AV ČR KJB100100802; GA AV ČR KAN400100652; GA ČR GEFON/06/E002 EU Projects: European Commission(XE) 215368 - SemiSpinNet; European Commission(XE) 214499 - NAMASTE Grant - others:AV ČR(CZ) AP0801 Program:Akademická prémie - Praemium Academiae Institutional research plan: CEZ:AV0Z10100521 Keywords : anisotropic magnetoresistance * diluted magnetic semiconductors Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.475, year: 2009 http://arxiv.org/abs/0906.3151

  3. Writing and reading antiferromagnetic Mn2Au by Néel spin-orbit torques and large anisotropic magnetoresistance.

    Science.gov (United States)

    Bodnar, S Yu; Šmejkal, L; Turek, I; Jungwirth, T; Gomonay, O; Sinova, J; Sapozhnik, A A; Elmers, H-J; Kläui, M; Jourdan, M

    2018-01-24

    Using antiferromagnets as active elements in spintronics requires the ability to manipulate and read-out the Néel vector orientation. Here we demonstrate for Mn 2 Au, a good conductor with a high ordering temperature suitable for applications, reproducible switching using current pulse generated bulk spin-orbit torques and read-out by magnetoresistance measurements. Reversible and consistent changes of the longitudinal resistance and planar Hall voltage of star-patterned epitaxial Mn 2 Au(001) thin films were generated by pulse current densities of ≃10 7  A/cm 2 . The symmetry of the torques agrees with theoretical predictions and a large read-out magnetoresistance effect of more than ≃6% is reproduced by ab initio transport calculations.

  4. Theoretical study on the perpendicular anisotropic magnetoresistance using Rashba-type ferromagnetic model

    Science.gov (United States)

    Yahagi, Y.; Miura, D.; Sakuma, A.

    2018-05-01

    We investigated the anisotropic magnetoresistance (AMR) effects in ferromagnetic-metal multi-layers stacked on non-magnetic insulators in the context of microscopic theory. We represented this situation with tight-binding models that included the exchange and Rashba fields, where the Rashba field was assumed to originate from spin-orbit interactions as junction effects with the insulator. To describe the AMR ratios, the DC conductivity was calculated based on the Kubo formula. As a result, we showed that the Rashba field induced both perpendicular and in-plane AMR effects and that the perpendicular AMR effect rapidly decayed with increasing film thickness.

  5. Large rectification magnetoresistance in nonmagnetic Al/Ge/Al heterojunctions

    OpenAIRE

    Zhang, Kun; Li, Huan-huan; Grünberg, Peter; Li, Qiang; Ye, Sheng-tao; Tian, Yu-feng; Yan, Shi-shen; Lin, Zhao-jun; Kang, Shi-shou; Chen, Yan-xue; Liu, Guo-lei; Mei, and Liang-mo

    2015-01-01

    Magnetoresistance and rectification are two fundamental physical properties of heterojunctions and respectively have wide applications in spintronics devices. Being different from the well known various magnetoresistance effects, here we report a brand new large magnetoresistance that can be regarded as rectification magnetoresistance: the application of a pure small sinusoidal alternating-current to the nonmagnetic Al/Ge Schottky heterojunctions can generate a significant direct-current volt...

  6. Large magnetoresistance tunnelling through a magnetically modulated nanostructure

    International Nuclear Information System (INIS)

    Lu Maowang; Zhang Lide

    2003-01-01

    Based on a combination of an inhomogeneous magnetic field and a two-dimensional electron gas, we have constructed a giant magnetoresistance nanostructure, which can be realized experimentally by the deposition of two parallel ferromagnetic strips on top of a semiconductor heterostructure. We have theoretically studied the magnetoresistance for electrons tunnelling through this nanostructure. It is shown that there exists a significant transmission difference between the parallel and antiparallel magnetization configurations, which leads to a large magnetoresistance. It is also shown that the magnetoresistance ratio strongly depends not only on incident electronic energy but also on the ferromagnetic strips, and thus a much larger magnetoresistance ratio can be obtained by properly fabricating the ferromagnetic strips in the system

  7. Magnetoresistance of magnetically doped ZnO films

    Energy Technology Data Exchange (ETDEWEB)

    Behan, A J; Mokhtari, A; Blythe, H J; Fox, A M; Gehring, G A [Department of Physics and Astronomy, University of Sheffield, Sheffield S3 7RH (United Kingdom); Ziese, M, E-mail: G.A.Gehring@sheffield.ac.u [Division of Superconductivity and Magnetism, University of Leipzig, D-04103, Leipzig (Germany)

    2009-08-26

    Magnetoresistance measurements have been made at 5 K on doped ZnO thin films grown by pulsed laser deposition. ZnCoO, ZnCoAlO and ZnMnAlO samples have been investigated and compared to similar films containing no transition metal dopants. It is found that the Co-doped samples with a high carrier concentration have a small negative magnetoresistance, irrespective of their magnetic moment. On decreasing the carrier concentration, a positive contribution to the magnetoresistance appears and a further negative contribution. This second, negative contribution, which occurs at very low carrier densities, correlates with the onset of ferromagnetism due to bound magnetic polarons suggesting that the negative magnetoresistance results from the destruction of polarons by a magnetic field. An investigation of the anisotropic magnetoresistance showed that the orientation of the applied magnetic field, relative to the sample, had a large effect. The results for the ZnMnAlO samples showed less consistent trends.

  8. Large tunneling anisotropic magnetoresistance in La0.7Sr0.3MnO3/pentacene/Cu structures prepared on SrTiO3 (110) substrates

    Science.gov (United States)

    Kamiya, Takeshi; Miyahara, Chihiro; Tada, Hirokazu

    2017-01-01

    We investigated tunneling anisotropic magnetoresistance (TAMR) at the interface between pentacene and La0.7Sr0.3MnO3 (LSMO) thin films prepared on SrTiO3 (STO) (110) substrates. The dependence of the TAMR ratio on the magnetic field strength was approximately ten times larger than that of the magnetic field angle at a high magnetic field. This large difference in the TAMR ratio is explained by the interface magnetic anisotropy of strain-induced LSMO thin films on a STO (110) substrate, which has an easy axis with an out-of-plane component. We also note that the TAMR owing to out-of-plane magnetization was positive at each angle of the in-plane magnetic field. This result implies that active control of the interface magnetic anisotropy between organic materials and ferromagnetic metals should realize nonvolatile and high-efficiency TAMR devices.

  9. Extremely large magnetoresistance in few-layer graphene/boron-nitride heterostructures.

    Science.gov (United States)

    Gopinadhan, Kalon; Shin, Young Jun; Jalil, Rashid; Venkatesan, Thirumalai; Geim, Andre K; Castro Neto, Antonio H; Yang, Hyunsoo

    2015-09-21

    Understanding magnetoresistance, the change in electrical resistance under an external magnetic field, at the atomic level is of great interest both fundamentally and technologically. Graphene and other two-dimensional layered materials provide an unprecedented opportunity to explore magnetoresistance at its nascent stage of structural formation. Here we report an extremely large local magnetoresistance of ∼2,000% at 400 K and a non-local magnetoresistance of >90,000% in an applied magnetic field of 9 T at 300 K in few-layer graphene/boron-nitride heterostructures. The local magnetoresistance is understood to arise from large differential transport parameters, such as the carrier mobility, across various layers of few-layer graphene upon a normal magnetic field, whereas the non-local magnetoresistance is due to the magnetic field induced Ettingshausen-Nernst effect. Non-local magnetoresistance suggests the possibility of a graphene-based gate tunable thermal switch. In addition, our results demonstrate that graphene heterostructures may be promising for magnetic field sensing applications.

  10. Simultaneous polarized neutron reflectometry and anisotropic magnetoresistance measurements.

    Science.gov (United States)

    Demeter, J; Teichert, A; Kiefer, K; Wallacher, D; Ryll, H; Menéndez, E; Paramanik, D; Steitz, R; Van Haesendonck, C; Vantomme, A; Temst, K

    2011-03-01

    A novel experimental facility to carry out simultaneous polarized neutron reflectometry (PNR) and anisotropic magnetoresistance (AMR) measurements is presented. Performing both techniques at the same time increases their strength considerably. The proof of concept of this method is demonstrated on a CoO/Co bilayer exchange bias system. Although information on the same phenomena, such as the coercivity or the reversal mechanism, can be separately obtained from either of these techniques, the simultaneous application optimizes the consistency between both. In this way, possible differences in experimental conditions, such as applied magnetic field amplitude and orientation, sample temperature, magnetic history, etc., can be ruled out. Consequently, only differences in the fundamental sensitivities of the techniques can cause discrepancies in the interpretation between the two. The almost instantaneous information obtained from AMR can be used to reveal time-dependent effects during the PNR acquisition. Moreover, the information inferred from the AMR measurements can be used for optimizing the experimental conditions for the PNR measurements in a more efficient way than with the PNR measurements alone.

  11. Strain, magnetic anisotropy, and anisotropic magnetoresistance in (Ga,Mn)As on high-index substrates: Application to (113)A -oriented layers

    Science.gov (United States)

    Dreher, L.; Donhauser, D.; Daeubler, J.; Glunk, M.; Rapp, C.; Schoch, W.; Sauer, R.; Limmer, W.

    2010-06-01

    Based on a detailed theoretical examination of the lattice distortion in high-index epilayers in terms of continuum mechanics, expressions are deduced that allow the calculation and experimental determination of the strain tensor for (hhl) -oriented (Ga,Mn)As layers. Analytical expressions are derived for the strain-dependent free-energy density and for the resistivity tensor for monoclinic and orthorhombic crystal symmetries, phenomenologically describing the magnetic anisotropy and anisotropic magnetoresistance by appropriate anisotropy and resistivity parameters, respectively. Applying the results to (113)A orientation with monoclinic crystal symmetry, the expressions are used to determine the strain tensor and the shear angle of a series of (113)A -oriented (Ga,Mn)As layers by high-resolution x-ray diffraction and to probe the magnetic anisotropy and anisotropic magnetoresistance at 4.2 K by means of angle-dependent magnetotransport. Whereas the transverse-resistivity parameters are nearly unaffected by the magnetic field, the parameters describing the longitudinal resistivity are strongly field dependent.

  12. Large linear magnetoresistance and magnetothermopower in layered SrZnSb$_2$

    OpenAIRE

    Wang, Kefeng; Petrovic, C.

    2016-01-01

    We report the large linear magnetoresistance ($\\sim 300\\%$ in 9 T field at 2 K) and magnetothermopower in layered SrZnSb$_2$ crystal with quasi-two-dimensional Sb layers. A crossover from the semiclassical parabolic field dependent magnetoresistance to linear field dependent magnetoresistance with increasing magnetic field is observed. The magnetoresistance behavior can be described very well by combining the semiclassical cyclotron contribution and the quantum limit magnetoresistance. Magnet...

  13. Large magnetoresistance in La-Ca-Mn-O films

    International Nuclear Information System (INIS)

    Chen, L.H.; Jin, S.; Tiefel, T.H.; Ramesh, R.; Schurig, D.

    1995-01-01

    A very large magnetoresistance value in excess of 10 6 % has been obtained at 110 K, H = 6 T in La-Ca-Mn-O thin films epitaxially grown on LaAlO 3 substrates by pulsed laser deposition. The as-deposited film exhibits a substantial magnetoresistance value of 39,000%, which is further improved by heat treatment. A strong dependence of the magnetoresistance on film thickness was observed, with the value reduced by orders of magnitude when the film is made thicker than ∼2,000 angstrom. This behavior is interpreted in terms of lattice strain in the La-Ca-Mn-O films

  14. Giant anisotropic magnetoresistance in a quantum anomalous Hall insulator

    Science.gov (United States)

    Kandala, Abhinav; Richardella, Anthony; Kempinger, Susan; Liu, Chao-Xing; Samarth, Nitin

    2015-01-01

    When a three-dimensional ferromagnetic topological insulator thin film is magnetized out-of-plane, conduction ideally occurs through dissipationless, one-dimensional (1D) chiral states that are characterized by a quantized, zero-field Hall conductance. The recent realization of this phenomenon, the quantum anomalous Hall effect, provides a conceptually new platform for studies of 1D transport, distinct from the traditionally studied quantum Hall effects that arise from Landau level formation. An important question arises in this context: how do these 1D edge states evolve as the magnetization is changed from out-of-plane to in-plane? We examine this question by studying the field-tilt-driven crossover from predominantly edge-state transport to diffusive transport in Crx(Bi,Sb)2−xTe3 thin films. This crossover manifests itself in a giant, electrically tunable anisotropic magnetoresistance that we explain by employing a Landauer–Büttiker formalism. Our methodology provides a powerful means of quantifying dissipative effects in temperature and chemical potential regimes far from perfect quantization. PMID:26151318

  15. Anisotropic magnetoresistance and anomalous Nernst effect in exchange biased permalloy/(1 0 0) NiO single-crystal

    Energy Technology Data Exchange (ETDEWEB)

    Holanda, J., E-mail: joseholanda@df.ufpe.br; Maior, D.S.; Azevedo, A.; Rezende, S.M.

    2017-06-15

    Highlights: • We have investigated the anisotropic magnetoresistance (AMR) and the anomalous Nernst effect (ANE) in an exchange-biased bilayer Py/(100) NiO single-Crystal. • The shift of the hysteresis loop, measured with the different techniques, yield approximately the same value of H{sub EB}. • In spite of the measurement techniques be based in different physical phenomena, our results confirm the robustness of the exchange anisotropy at the Py/NiO interface. • The strength of the anomalous Nernst effect for the exchange-biased permalloy film is compared to values measured in non biased films. - Abstract: We have investigated the anisotropic magnetoresistance (AMR) and the anomalous Nernst effect (ANE) in an exchange-biased bilayer consisting of a thin film of permalloy deposited on a single crystal antiferromagnetic NiO (1 0 0). The exchange bias field (H{sub EB}) value was obtained by means of AMR, ANE and magnetization hysteresis measurements. The shift of the hysteresis loop, measured with the three different techniques, yield approximately the same value of H{sub EB.} In spite of the measurement techniques be based in different physical phenomena, our results confirm the robustness of the exchange anisotropy at the Py/NiO interface. The strength of the anomalous Nernst effect for the exchange-biased permalloy film is compared to values measured in non biased films.

  16. Experimental study of the anisotropic magneto-Seebeck effect in (Ga,Mn)As thin films

    Energy Technology Data Exchange (ETDEWEB)

    Althammer, Matthias; Krupp, Alexander T.; Brenninger, Thomas; Venkateshvaran, Deepak; Opel, Matthias; Gross, Rudolf; Goennenwein, Sebastian T.B. [Walther-Meissner-Institut, Bayerische Akademie der Wissenschaften, Garching (Germany); Dreher, Lukas [Walter Schottky Institut, Technische Universitaet Muenchen, Garching (Germany); Schoch, Wladimir; Limmer, Wolfgang [Abteilung Halbleiterphysik, Universitaet Ulm, Ulm (Germany)

    2011-07-01

    In analogy to anisotropic magnetoresistance (AMR), the thermopower of ferromagnetic materials also characteristically depends on the orientation of the magnetization vector. This anisotropic magneto-thermopower - or anisotropic magneto-Seebeck effect (AMS) - has only scarcely been studied to date. Taking the ferromagnetic semiconductor (Ga,Mn)As with its large magneto-resistive effects as a prototype example, we have measured the evolution of both the AMR and the AMS effects at liquid He temperatures as a function of the orientation of a magnetic field applied in the (Ga,Mn)As film plane, for different, fixed magnetic field magnitudes. Our data show that the AMS effect can be adequately modeled only if the symmetry of the (Ga,Mn)As crystal is explicitly taken into account. We quantitatively compare our AMR and AMS measurements with corresponding model calculations, and address the validity of the Mott relations linking the magneto-resistance and the magneto-Seebeck coefficients.

  17. Observation of large low-field magnetoresistance in spinel cobaltite: A new half-metal

    KAUST Repository

    Li, Peng

    2015-12-10

    Low-field magnetoresistance is an effective and energy-saving way to use half-metallic materials in magnetic reading heads and magnetic random access memory. Common spin-polarized materials with low field magnetoresistance effect are perovskite-type manganese, cobalt, and molybdenum oxides. In this study, we report a new type of spinel cobaltite materials, self-assembled nanocrystalline NiCo2O4, which shows large low field magnetoresistance as large as –19.1% at 0.5 T and –50% at 9 T (2 K). The large low field magnetoresistance is attributed to the fast magnetization rotation of the core nanocrystals. The surface spin-glass is responsible for the observed weak saturation of magnetoresistance under high fields. Our calculation demonstrates that the half-metallicity of NiCo2O4 comes from the hopping eg electrons within the tetrahedral Co-atoms and the octahedral Ni-atoms. The discovery of large low-field magnetoresistance in simple spinel oxide NiCo2O4, a non-perovskite oxide, leads to an extended family of low-field magnetoresistance materials. (© 2016 WILEY-VCH Verlag GmbH &Co. KGaA, Weinheim)

  18. Observation of large low-field magnetoresistance in spinel cobaltite: A new half-metal

    KAUST Repository

    Li, Peng; Xia, Chuan; Zheng, Dongxing; Wang, Ping; Jin, Chao; Bai, Haili

    2015-01-01

    Low-field magnetoresistance is an effective and energy-saving way to use half-metallic materials in magnetic reading heads and magnetic random access memory. Common spin-polarized materials with low field magnetoresistance effect are perovskite-type manganese, cobalt, and molybdenum oxides. In this study, we report a new type of spinel cobaltite materials, self-assembled nanocrystalline NiCo2O4, which shows large low field magnetoresistance as large as –19.1% at 0.5 T and –50% at 9 T (2 K). The large low field magnetoresistance is attributed to the fast magnetization rotation of the core nanocrystals. The surface spin-glass is responsible for the observed weak saturation of magnetoresistance under high fields. Our calculation demonstrates that the half-metallicity of NiCo2O4 comes from the hopping eg electrons within the tetrahedral Co-atoms and the octahedral Ni-atoms. The discovery of large low-field magnetoresistance in simple spinel oxide NiCo2O4, a non-perovskite oxide, leads to an extended family of low-field magnetoresistance materials. (© 2016 WILEY-VCH Verlag GmbH &Co. KGaA, Weinheim)

  19. Anomalous electronic structure and magnetoresistance in TaAs2.

    Science.gov (United States)

    Luo, Yongkang; McDonald, R D; Rosa, P F S; Scott, B; Wakeham, N; Ghimire, N J; Bauer, E D; Thompson, J D; Ronning, F

    2016-06-07

    The change in resistance of a material in a magnetic field reflects its electronic state. In metals with weakly- or non-interacting electrons, the resistance typically increases upon the application of a magnetic field. In contrast, negative magnetoresistance may appear under some circumstances, e.g., in metals with anisotropic Fermi surfaces or with spin-disorder scattering and semimetals with Dirac or Weyl electronic structures. Here we show that the non-magnetic semimetal TaAs2 possesses a very large negative magnetoresistance, with an unknown scattering mechanism. Density functional calculations find that TaAs2 is a new topological semimetal [ℤ2 invariant (0;111)] without Dirac dispersion, demonstrating that a negative magnetoresistance in non-magnetic semimetals cannot be attributed uniquely to the Adler-Bell-Jackiw chiral anomaly of bulk Dirac/Weyl fermions.

  20. Gate-tunable large magnetoresistance in an all-semiconductor spin valve device.

    Science.gov (United States)

    Oltscher, M; Eberle, F; Kuczmik, T; Bayer, A; Schuh, D; Bougeard, D; Ciorga, M; Weiss, D

    2017-11-27

    A large spin-dependent and electric field-tunable magnetoresistance of a two-dimensional electron system is a key ingredient for the realization of many novel concepts for spin-based electronic devices. The low magnetoresistance observed during the last few decades in devices with lateral semiconducting transport channels between ferromagnetic source and drain contacts has been the main obstacle for realizing spin field effect transistor proposals. Here, we show both a large two-terminal magnetoresistance in a lateral spin valve device with a two-dimensional channel, with up to 80% resistance change, and tunability of the magnetoresistance by an electric gate. The enhanced magnetoresistance is due to finite electric field effects at the contact interface, which boost spin-to-charge conversion. The gating scheme that we use is based on switching between uni- and bidirectional spin diffusion, without resorting to spin-orbit coupling. Therefore, it can also be employed in materials with low spin-orbit coupling.

  1. Temperature-dependent anisotropic magnetoresistance inversion behaviors in Fe{sub 3}O{sub 4} films

    Energy Technology Data Exchange (ETDEWEB)

    Yoon, Kap Soo [Novel Functional Materials and Devices Lab, The Research Institute for Natural Science, Department of Physics, Hanyang University, Seoul 133-791 (Korea, Republic of); Hong, Jin Pyo, E-mail: jphong@hanyang.ac.kr [Novel Functional Materials and Devices Lab, The Research Institute for Natural Science, Department of Physics, Hanyang University, Seoul 133-791 (Korea, Republic of); Division of Nano-Scale Semiconductor Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of)

    2017-02-01

    We address the abnormal anisotropic magnetoresistance (AMR) reversal feature of half-metallic polycrystalline Fe{sub 3}O{sub 4} films occurring at a specific temperature. Experimental results revealed a positive to negative MR transition in the Fe{sub 3}O{sub 4} films at 264 K, which reflect the influence of additional domain wall scattering. These features was described by a correlation between domain wall resistance and inversion behavior of AMR with additional domain wall scattering factors. We further describe a possible model based on systematic structural and electrical measurements that employs a temperature-dependent domain wall width and spin diffusion length of the conducting electrons. This model allows for spin-flipping scattering of spin polarized electrons inside a proper domain width.

  2. Mobility controlled linear magnetoresistance with 3D anisotropy in a layered graphene pallet

    KAUST Repository

    Zhang, Qiang

    2016-09-27

    A bulk sample of pressed graphene sheets was prepared under hydraulic pressure (similar to 150 MPa). The cross-section of the sample demonstrates a layered structure, which leads to 3D electrical transport properties with anisotropic mobility. The electrical transport properties of the sample were measured over a wide temperature (2-400 K) and magnetic field (-140 kOe <= H <= 140 kOe) range. The magnetoresistance measured at a fixed temperature can be described by R(H, theta) = R(epsilon H-theta, 0) with epsilon(theta) =(cos(2)theta + gamma(-2) sin(2)theta)(1/2), where gamma is the mobility anisotropy constant and theta is the angle between the normal of the sample plane and the magnetic field. The large linear magnetoresistance (up to 36.9% at 400 K and 140 kOe) observed at high fields is ascribed to a classical magnetoresistance caused by mobility fluctuation (Delta mu). The magnetoresistance value at 140 kOe was related to the average mobility () because of the condition Delta mu < . The carrier concentration remained constant and the temperature-dependent resistivity was proportional to the average mobility, as verified by Kohler\\'s rule. Anisotropic dephasing length was deduced from weak localization observed at low temperatures.

  3. Large linear magnetoresistance in topological crystalline insulator Pb_0_._6Sn_0_._4Te

    International Nuclear Information System (INIS)

    Roychowdhury, Subhajit; Ghara, Somnath; Guin, Satya N.; Sundaresan, A.; Biswas, Kanishka

    2016-01-01

    Classical magnetoresistance generally follows the quadratic dependence of the magnetic field at lower field and finally saturates when field is larger. Here, we report the large positive non-saturating linear magnetoresistance in topological crystalline insulator, Pb_0_._6Sn_0_._4Te, at different temperatures between 3 K and 300 K in magnetic field up to 9 T. Magnetoresistance value as high as ∼200% was achieved at 3 K at magnetic field of 9 T. Linear magnetoresistance observed in Pb_0_._6Sn_0_._4Te is mainly governed by the spatial fluctuation carrier mobility due to distortions in the current paths in inhomogeneous conductor. - Graphical abstract: Large non-saturating linear magnetoresistance has been evidenced in topological crystalline insulator, Pb_0_._6Sn_0_._4Te, at different temperatures between 3 K and 300 K in magnetic field up to 9 T. - Highlights: • Large non-saturating linear magnetoresistance was achieved in the topological crystalline insulator, Pb_0_._6Sn_0_._4Te. • Highest magnetoresistance value as high as ~200% was achieved at 3 K at magnetic field of 9 T. • Linear magnetoresistance in Pb_0_._6Sn_0_._4Te is mainly governed by the spatial fluctuation of the carrier mobility.

  4. Large linear magnetoresistance from neutral defects in Bi$_2$Se$_3$

    OpenAIRE

    Kumar, Devendra; Lakhani, Archana

    2016-01-01

    The chalcogenide Bi$_2$Se$_3$ can attain the three dimensional (3D) Dirac semimetal state under the influence of strain and microstrain. Here we report the presnece of large linear magnetoresistance in such a Bi$_2$Se$_3$ crystal. The magnetoresistance has quadratic form at low fields which crossovers to linear above 4 T. The temperature dependence of magnetoresistance scales with carrier mobility and the crossover field scales with inverse of mobility. Our analysis suggest that the linear ma...

  5. Interfacial Exchange Coupling Induced Anomalous Anisotropic Magnetoresistance in Epitaxial γ′-Fe 4 N/CoN Bilayers

    KAUST Repository

    Li, Zirun; Mi, Wenbo; Wang, Xiaocha; Zhang, Xixiang

    2015-01-01

    Anisotropic magnetoresistance (AMR) of the facing-target reactively sputtered epitaxial γ′-Fe4N/CoN bilayers is investigated. The phase shift and rectangular-like AMR appears at low temperatures, which can be ascribed to the interfacial exchange coupling. The phase shift comes from the exchange bias (EB) that makes the magnetization lag behind a small field. When the γ′-Fe4N thickness increases, the rectangular-like AMR appears. The rectangular-like AMR should be from the combined contributions including the EB-induced unidirectional anisotropy, intrinsic AMR of γ′-Fe4N layer and interfacial spin scattering.

  6. Interfacial Exchange Coupling Induced Anomalous Anisotropic Magnetoresistance in Epitaxial γ′-Fe 4 N/CoN Bilayers

    KAUST Repository

    Li, Zirun

    2015-02-02

    Anisotropic magnetoresistance (AMR) of the facing-target reactively sputtered epitaxial γ′-Fe4N/CoN bilayers is investigated. The phase shift and rectangular-like AMR appears at low temperatures, which can be ascribed to the interfacial exchange coupling. The phase shift comes from the exchange bias (EB) that makes the magnetization lag behind a small field. When the γ′-Fe4N thickness increases, the rectangular-like AMR appears. The rectangular-like AMR should be from the combined contributions including the EB-induced unidirectional anisotropy, intrinsic AMR of γ′-Fe4N layer and interfacial spin scattering.

  7. Magnetoresistance in La0.7Ca0.3MnO3-YBa2Cu3O7 F/S/F trilayers

    International Nuclear Information System (INIS)

    Pena, V.; Visani, C.; Bruno, F.; Garcia-Barriocanal, J.; Arias, D.; Rivera, A.; Sefrioui, Z.; Leon, C.; Te Velthuis, S.G.E.; Hoffmann, A.; Nemes, N.; Garcia-Hernandez, M.; Martinez, J.L.; Santamaria, J.

    2007-01-01

    We report large magnetoresistance in ferromagnet/superconductor/ferromagnet structures made of La 0.7 Ca 0.3 MnO 3 and YBa 2 Cu 3 O 7 at temperatures along the resistive transition. We find that the magnetoresistance phenomenon is independent on the orientation of electric current versus field. Furthermore, the effect is also independent on the sweep rate of the magnetic field. This excludes interpretations in terms of spontaneous vortices or anisotropic magnetoresistance of the ferromagnetic layers and supports the view that the magnetoresistance phenomenon originates at the spin-dependent transport of quasiparticles transmitted from the ferromagnetic electrodes into the superconductor

  8. Anisotropic Magnetoresistance of Nano-conductive Filament in Co/HfO2/Pt Resistive Switching Memory.

    Science.gov (United States)

    Li, Leilei; Liu, Yang; Teng, Jiao; Long, Shibing; Guo, Qixun; Zhang, Meiyun; Wu, Yu; Yu, Guanghua; Liu, Qi; Lv, Hangbing; Liu, Ming

    2017-12-01

    Conductive bridge random access memory (CBRAM) has been extensively studied as a next-generation non-volatile memory. The conductive filament (CF) shows rich physical effects such as conductance quantization and magnetic effect. But so far, the study of filaments is not very sufficient. In this work, Co/HfO 2 /Pt CBRAM device with magnetic CF was designed and fabricated. By electrical manipulation with a partial-RESET method, we controlled the size of ferromagnetic metal filament. The resistance-temperature characteristics of the ON-state after various partial-RESET behaviors have been studied. Using two kinds of magnetic measurement methods, we measured the anisotropic magnetoresistance (AMR) of the CF at different temperatures to reflect the magnetic structure characteristics. By rotating the direction of the magnetic field and by sweeping the magnitude, we obtained the spatial direction as well as the easy-axis of the CF. The results indicate that the easy-axis of the CF is along the direction perpendicular to the top electrode plane. The maximum magnetoresistance was found to appear when the angle between the direction of magnetic field and that of the electric current in the CF is about 30°, and this angle varies slightly with temperature, indicating that the current is tilted.

  9. Large linear magnetoresistivity in strongly inhomogeneous planar and layered systems

    International Nuclear Information System (INIS)

    Bulgadaev, S.A.; Kusmartsev, F.V.

    2005-01-01

    Explicit expressions for magnetoresistance R of planar and layered strongly inhomogeneous two-phase systems are obtained, using exact dual transformation, connecting effective conductivities of in-plane isotropic two-phase systems with and without magnetic field. These expressions allow to describe the magnetoresistance of various inhomogeneous media at arbitrary concentrations x and magnetic fields H. All expressions show large linear magnetoresistance effect with different dependencies on the phase concentrations. The corresponding plots of the x- and H-dependencies of R(x,H) are represented for various values, respectively, of magnetic field and concentrations at some values of inhomogeneity parameter. The obtained results show a remarkable similarity with the existing experimental data on linear magnetoresistance in silver chalcogenides Ag 2+δ Se. A possible physical explanation of this similarity is proposed. It is shown that the random, stripe type, structures of inhomogeneities are the most suitable for a fabrication of magnetic sensors and a storage of information at room temperatures

  10. Angle-dependent magnetoresistance and quantum oscillations in high-mobility semimetal LuPtBi

    KAUST Repository

    Xu, Guizhou; Hou, Zhipeng; Wang, Yue; Zhang, Xiaoming; Zhang, Hongwei; Liu, Enke; Xi, X; Xu, Feng; Wu, Guangheng; Zhang, Xixiang; Wang, Wenhong

    2017-01-01

    The recent discovery of ultrahigh mobility and large positive magnetoresistance in topologically non-trivial Half-Heusler semimetal LuPtBi provides a unique playground for studying exotic physics and significant perspective for device applications. As an fcc-structured electron-hole-compensated semimetal, LuPtBi theoretically exhibits six symmetrically arranged anisotropic electron Fermi pockets and two nearly-spherical hole pockets, offering the opportunity to explore the physics of Fermi surface with a simple angle-related magnetotransport properties. In this work, through the angle-dependent transverse magnetoresistance measurements, in combination with high-field SdH quantum oscillations, we achieved to map out a Fermi surface with six anisotropic pockets in the high-temperature and low-field regime, and furthermore, identify a possible magnetic field driven Fermi surface change at lower temperatures. Reasons account for the Fermi surface change in LuPtBi are discussed in terms of the field-induced electron evacuation due to Landau quantization.

  11. Angle-dependent magnetoresistance and quantum oscillations in high-mobility semimetal LuPtBi

    KAUST Repository

    Xu, Guizhou

    2017-03-14

    The recent discovery of ultrahigh mobility and large positive magnetoresistance in topologically non-trivial Half-Heusler semimetal LuPtBi provides a unique playground for studying exotic physics and significant perspective for device applications. As an fcc-structured electron-hole-compensated semimetal, LuPtBi theoretically exhibits six symmetrically arranged anisotropic electron Fermi pockets and two nearly-spherical hole pockets, offering the opportunity to explore the physics of Fermi surface with a simple angle-related magnetotransport properties. In this work, through the angle-dependent transverse magnetoresistance measurements, in combination with high-field SdH quantum oscillations, we achieved to map out a Fermi surface with six anisotropic pockets in the high-temperature and low-field regime, and furthermore, identify a possible magnetic field driven Fermi surface change at lower temperatures. Reasons account for the Fermi surface change in LuPtBi are discussed in terms of the field-induced electron evacuation due to Landau quantization.

  12. Drastic Pressure Effect on the Extremely Large Magnetoresistance in WTe2: Quantum Oscillation Study.

    Science.gov (United States)

    Cai, P L; Hu, J; He, L P; Pan, J; Hong, X C; Zhang, Z; Zhang, J; Wei, J; Mao, Z Q; Li, S Y

    2015-07-31

    The quantum oscillations of the magnetoresistance under ambient and high pressure have been studied for WTe2 single crystals, in which extremely large magnetoresistance was discovered recently. By analyzing the Shubnikov-de Haas oscillations, four Fermi surfaces are identified, and two of them are found to persist to high pressure. The sizes of these two pockets are comparable, but show increasing difference with pressure. At 0.3 K and in 14.5 T, the magnetoresistance decreases drastically from 1.25×10(5)% under ambient pressure to 7.47×10(3)% under 23.6 kbar, which is likely caused by the relative change of Fermi surfaces. These results support the scenario that the perfect balance between the electron and hole populations is the origin of the extremely large magnetoresistance in WTe2.

  13. Anisotropic mobility and carrier dynamics in the β-type BEDT-TTF salts as studied by inter-layer transverse magnetoresistance

    Directory of Open Access Journals (Sweden)

    Shigeharu Sugawara and Masafumi Tamura

    2013-01-01

    Full Text Available A new method to estimate an in-plane conduction anisotropy in a quasi-two-dimensional (q2D layered conductor by measuring the inter-layer transverse magnetoresistance is proposed. We applied this method to layered organic conductors β-(BEDT-TTF2X (BEDT-TTF = bis(ethylenedithiotetrathiafulvalene, C10H8S8; X = IBr2, I2Br by applying magnetic field rotating within the basal plane at 4.2 K. We found the anisotropic behaviour of carrier mobility μ. From this, anomalous distribution of carrier lifetime τ on the Fermi surface is derived, by the use of Fermi surface data reported for the materials. Calculations of the non-uniform susceptibility χ0(q suggest that carrier scattering is enhanced at specific k-points related to partial nesting of the Fermi surface. The present method is thus demonstrated to be an efficient experimental tool to elucidate anisotropic carrier dynamics in q2D conductors.

  14. Magnetic anisotropy and magnetoresistance in Co-based multilayers: a polarised neutron reflectivity study

    International Nuclear Information System (INIS)

    Yusuf, S.M.

    2000-01-01

    We have studied giant magnetoresistance (GMR) and anisotropic magnetoresistance (AMR) effects by carrying out magnetization, magnetoresistance and polarized neutron reflectivity measurements on epitaxial Co/Re multilayers. Polarized neutron reflectivity study with polarization analysis gives a direct way to sense the direction of sublattice magnetization and coupling between magnetic layers. The evolution of magnetic structure as a function of the strength and direction of the applied magnetic field has been studied. The AMR effect observed in magnetoresistance study has been explained in the light of observed magnetic structure. (author)

  15. Large magnetoresistance in (AA')2FeReO6 double perovskites

    International Nuclear Information System (INIS)

    Teresa, J.M. de; Serrate, D.; Blasco, J.; Ibarra, M.R.; Morellon, L.

    2005-01-01

    We review the main structural, magnetic and magnetotransport properties of the intriguing (AA') 2 FeReO 6 magnetic double perovskites. As the average cation size decreases, the crystallographic structure at room temperature evolves from cubic [(AA') 2 =Ba 2 , Ba 1.5 Sr 0.5 , BaSr, Ba 0.5 Sr 1.5 ] to tetragonal [(AA') 2 =Sr 2 ] and monoclinic [(AA') 2 =Ca 0.5 Sr 1.5 , CaSr, Ca 1.5 Sr 0.5 , Ca 2 ]. The Curie temperature increases anomalously from ∼303K for Ba 2 to ∼522K for Ca 2 in sharp contrast with the observed behaviour in the isostructural compounds (AA') 2 FeMoO 6 . Other anomalous features in the (AA') 2 FeReO 6 series are: the large magnetic anisotropy, the large magnetoelastic coupling and the semiconducting behaviour of the monoclinic compounds. The monoclinic compounds undergo a structural/magnetic transition at T S below 125K. Three different magnetoresistance mechanisms have been identified: the intergrain negative magnetoresistance effect, which is present across the whole series of compounds, and in the case of the monoclinic compounds below T S a negative magnetoresistance effect associated to the melting of the low-temperature phase and a positive magnetoresistance effect only present in (AA') 2 =Ca 2 below T∼50K

  16. Large magnetoresistance in intercalated Cu oxides

    OpenAIRE

    Grigoryan, L.; Furusawa, M.; Hori, H.; Tokumoto, M.

    1997-01-01

    Magnetism and electrical resistance as a function of magnetic field, temperature, and chemical composition are studied in Cu oxides intercalated with metal phthalocyanines MPc, where M is Fe or Ni, and Pc is C_H_N_. An unusually large positive magnetoresistance (MR) of ~ 1200% is observed in FePc-intercalated Bi_Sr_Ca_Cu_O_ samples with two Cu-O layers in the unit cell (n=2). The magnitude of the MR decreased to 40% and ~ 0% in the FePc-intercalated n=3 and n=4 samples, respectively, and to ~...

  17. Anomalous magnetisation process in UFe4Al8 probed by magnetisation and magnetoresistance

    International Nuclear Information System (INIS)

    Godinho, M.; Estrela, P.; Goncalves, A.P.; Almeida, M.; Spirlet, J.C.; Bonfait, G.

    1996-01-01

    A strong anisotropic magnetoresistance has been measured in a single crystal of UFe 4 Al 8 and has been used to prove the ferromagnetic order of the U lattice. The giant anomaly detected in the magnetoresistance curves is interpreted as two 90 rotations of the magnetisation. This interpretation has been confirmed by magnetisation measurements. (orig.)

  18. Spin Hall magnetoresistance in antiferromagnet/normal metal bilayers

    KAUST Repository

    Manchon, Aurelien

    2017-01-01

    We investigate the emergence of spin Hall magnetoresistance in a magnetic bilayer composed of a normal metal adjacent to an antiferromagnet. Based on a recently derived drift diffusion equation, we show that the resistance of the bilayer depends on the relative angle between the direction transverse to the current flow and the Néel order parameter. While this effect presents striking similarities with the spin Hall magnetoresistance recently reported in ferromagnetic bilayers, its physical origin is attributed to the anisotropic spin relaxation of itinerant spins in the antiferromagnet.

  19. Electrical detection of ferromagnetic resonance in ferromagnet/n-GaAs heterostructures by tunneling anisotropic magnetoresistance

    Energy Technology Data Exchange (ETDEWEB)

    Liu, C.; Boyko, Y.; Geppert, C. C.; Christie, K. D.; Stecklein, G.; Crowell, P. A., E-mail: crowell@physics.umn.edu [School of Physics and Astronomy, University of Minnesota, Minneapolis, Minnesota 55455 (United States); Patel, S. J. [Department of Materials, University of California, Santa Barbara, California 93106 (United States); Palmstrøm, C. J. [Department of Materials, University of California, Santa Barbara, California 93106 (United States); Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States)

    2014-11-24

    We observe a dc voltage peak at ferromagnetic resonance (FMR) in samples consisting of a single ferromagnetic (FM) layer grown epitaxially on the n-GaAs (001) surface. The FMR peak is detected as an interfacial voltage with a symmetric line shape and is present in samples based on various FM/n-GaAs heterostructures, including Co{sub 2}MnSi/n-GaAs, Co{sub 2}FeSi/n-GaAs, and Fe/n-GaAs. We show that the interface bias voltage dependence of the FMR signal is identical to that of the tunneling anisotropic magnetoresistance (TAMR) over most of the bias range. Furthermore, we show how the precessing magnetization yields a dc FMR signal through the TAMR effect and how the TAMR phenomenon can be used to predict the angular dependence of the FMR signal. This TAMR-induced FMR peak can be observed under conditions where no spin accumulation is present and no spin-polarized current flows in the semiconductor.

  20. In-plane electric field controlled ferromagnetism and anisotropic magnetoresistance in an LSMO/PMN-PT heterostructure

    Science.gov (United States)

    Guo, Qi; Xu, Xiaoguang; Wang, Fang; Lu, Yunhao; Chen, Jikun; Wu, Yanjun; Meng, Kangkang; Wu, Yong; Miao, Jun; Jiang, Yong

    2018-06-01

    We report the in-plane electric field controlled ferromagnetism of La2/3Sr1/3MnO3 (LSMO) films epitaxially deposited on [Pb(Mg1/3Nb2/3)O3]0.7-(PbTiO3)0.3 (PMN-PT) (001), (011) and (111) single crystal substrates. The in-plane coercivities (H c∥) and remanences of the LSMO films greatly depend on the in-plane electric field applied on the PMN-PT (001) and (011) substrates. The experimental change of H c∥ is consistent with the Stoner–Wohlfarth model and first principle calculation with the electric field varying from ‑10 to 10 kV cm‑1. Moreover, the Curie temperature and anisotropic magnetoresistance of the LSMO films can also be manipulated by an in-plane electric field. Finally, the LSMO/PMN-PT (001) heterostructure is designed to be a new kind of magnetic signal generator with the source of electric field.

  1. Tunneling magnetoresistance sensor with pT level 1/f magnetic noise

    Science.gov (United States)

    Deak, James G.; Zhou, Zhimin; Shen, Weifeng

    2017-05-01

    Magnetoresistive devices are important components in a large number of commercial electronic products in a wide range of applications including industrial position sensors, automotive sensors, hard disk read heads, cell phone compasses, and solid state memories. These devices are commonly based on anisotropic magnetoresistance (AMR) and giant magnetoresistance (GMR), but over the past few years tunneling magnetoresistance (TMR) has been emerging in more applications. Here we focus on recent work that has enabled the development of TMR magnetic field sensors with 1/f noise of less than 100 pT/rtHz at 1 Hz. Of the commercially available sensors, the lowest noise devices have typically been AMR, but they generally have the largest die size. Based on this observation and modeling of experimental data size and geometry dependence, we find that there is an optimal design rule that produces minimum 1/f noise. This design rule requires maximizing the areal coverage of an on-chip flux concentrator, providing it with a minimum possible total gap width, and tightly packing the gaps with MTJ elements, which increases the effective volume and decreases the saturation field of the MTJ freelayers. When properly optimized using this rule, these sensors have noise below 60 pT/rtHz, and could possibly replace fluxgate magnetometers in some applications.

  2. Magnetoresistance effect in (La, Sr)MnO3 bicrystalline films.

    Science.gov (United States)

    Alejandro, G; Steren, L B; Pastoriza, H; Vega, D; Granada, M; Sánchez, J C Rojas; Sirena, M; Alascio, B

    2010-09-01

    The angular dependence of the magnetoresistance effect has been measured on bicrystalline La(0.75)Sr(0.25)MnO(3) films. The measurements have been performed on an electronically lithographed Wheatstone bridge. The study of the angular dependence of both the magnetoresistance and the resistance of single-crystalline and grain-boundary regions of the samples allowed us to isolate two contributions of low-field magnetoresistance in manganites. One of them is associated with the spin-orbit effect, i.e. the anisotropic magnetoresistance of ferromagnetic compounds, and the other one is related to spin-disorder regions at the grain boundary. Complementary x-ray diffraction, ferromagnetic resonance and low temperature magnetization experiments contribute to the characterization of the magnetic anisotropy of the samples and the general comprehension of the problem.

  3. Magnetoresistance effect in (La, Sr)MnO3 bicrystalline films

    International Nuclear Information System (INIS)

    Alejandro, G; Pastoriza, H; Granada, M; Rojas Sanchez, J C; Sirena, M; Alascio, B; Steren, L B; Vega, D

    2010-01-01

    The angular dependence of the magnetoresistance effect has been measured on bicrystalline La 0.75 Sr 0.25 MnO 3 films. The measurements have been performed on an electronically lithographed Wheatstone bridge. The study of the angular dependence of both the magnetoresistance and the resistance of single-crystalline and grain-boundary regions of the samples allowed us to isolate two contributions of low-field magnetoresistance in manganites. One of them is associated with the spin-orbit effect, i.e. the anisotropic magnetoresistance of ferromagnetic compounds, and the other one is related to spin-disorder regions at the grain boundary. Complementary x-ray diffraction, ferromagnetic resonance and low temperature magnetization experiments contribute to the characterization of the magnetic anisotropy of the samples and the general comprehension of the problem.

  4. Domain wall magnetoresistance in BiFeO3 thin films measured by scanning probe microscopy.

    Science.gov (United States)

    Domingo, N; Farokhipoor, S; Santiso, J; Noheda, B; Catalan, G

    2017-08-23

    We measure the magnetotransport properties of individual 71° domain walls in multiferroic BiFeO 3 by means of conductive-atomic force microscopy (C-AFM) in the presence of magnetic fields up to one Tesla. The results suggest anisotropic magnetoresistance at room temperature, with the sign of the magnetoresistance depending on the relative orientation between the magnetic field and the domain wall plane. A consequence of this finding is that macroscopically averaged magnetoresistance measurements for domain wall bunches are likely to underestimate the magnetoresistance of each individual domain wall.

  5. Tailoring anisotropic magnetoresistance and giant magnetoresistance hysteresis loops with spin-polarized current injection

    International Nuclear Information System (INIS)

    Wegrowe, J.-E.; Kelly, D.; Hoffer, X.; Guittienne, Ph.; Ansermet, J.-Ph.

    2001-01-01

    Current pulses were injected into magnetic nanowires. Their effect on the magnetoresistance hysteresis loops was studied for three morphologies: homogeneous Ni wires, copper wires containing five cobalt/copper bilayers, and hybrid structures composed of a homogeneous Ni half wire and a multilayered Co/Cu half wire. The characteristic features of the action of the current on the magnetization are shown and discussed. [copyright] 2001 American Institute of Physics

  6. Large magnetoresistance in non-magnetic silver chalcogenides and new class of magnetoresistive compounds

    Science.gov (United States)

    Saboungi, Marie-Louis; Price, David C. L.; Rosenbaum, Thomas F.; Xu, Rong; Husmann, Anke

    2001-01-01

    The heavily-doped silver chalcogenides, Ag.sub.2+.delta. Se and Ag.sub.2+.delta. Te, show magnetoresistance effects on a scale comparable to the "colossal" magnetoresistance (CMR) compounds. Hall coefficient, magnetoconductivity, and hydrostatic pressure experiments establish that elements of narrow-gap semiconductor physics apply, but both the size of the effects at room temperature and the linear field dependence down to fields of a few Oersteds are surprising new features.

  7. Isothermal anisotropic magnetoresistance in antiferromagnetic metallic IrMn

    Czech Academy of Sciences Publication Activity Database

    Galceran, R.; Fina, I.; Cisneros-Fernandez, J.; Bozzo, B.; Frontera, C.; Lopez-Mir, L.; Deniz, H.; Park, K.W.; Park, B.G.; Balcells, J.; Martí, Xavier; Jungwirth, Tomáš; Martínez, B.

    2016-01-01

    Roč. 6, Oct (2016), 1-6, č. článku 35471. ISSN 2045-2322 R&D Projects: GA MŠk LM2015087; GA ČR GB14-37427G EU Projects: European Commission(XE) 268066 - 0MSPIN Institutional support: RVO:68378271 Keywords : antiferromagnets * spintronics * magnetoresistance Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 4.259, year: 2016

  8. Anisotropy of magnetoresistance on trapping magnetic fields in granular HTSC

    CERN Document Server

    Sukhanov, A A

    2003-01-01

    The features of magnetoresistance in Bi (Pb)-HTSC ceramics with the magnetic fields trapped are investigated. It is found that on trapping magnetic flux the magnetoresistance in granular HTSC becomes anisotropic. Moreover, for magnetic fields H parallel and currents perpendicular to field H sub i which induces the trapping the magnetoresistance field dependence DELTA R(H) is nonmonotonic and the magnetoresistance is negative for small fields H < Hinv. The effect of trapped field and transport current and their orientations on the dependence DELTA R(H) is investigated. In particular, it is found that the field of magnetoresistance sign inversion Hinv almost linearly grows with increase of the effective trapped magnetic fields. Hinv decreases down to zero as the angle between fields H and H sub i increases up to pi/2 and slightly decreases with increasing transport current. The results are treated in terms of the model of magnetic flux trapping in superconducting grains or 'loops' embedded in a matrix of wea...

  9. Magnetoresistance effect in (La, Sr)MnO{sub 3} bicrystalline films

    Energy Technology Data Exchange (ETDEWEB)

    Alejandro, G; Pastoriza, H; Granada, M; Rojas Sanchez, J C; Sirena, M; Alascio, B [Centro Atomico Bariloche (CNEA), Av. Bustillo 9500, 8400 San Carlos de Bariloche, Pcia. de Rio Negro (Argentina); Steren, L B; Vega, D, E-mail: galejand@cab.cnea.gov.a [Centro Atomico Constituyentes (CNEA), 1650 San MartIn, Pcia. de Buenos Aires (Argentina)

    2010-09-01

    The angular dependence of the magnetoresistance effect has been measured on bicrystalline La{sub 0.75}Sr{sub 0.25}MnO{sub 3} films. The measurements have been performed on an electronically lithographed Wheatstone bridge. The study of the angular dependence of both the magnetoresistance and the resistance of single-crystalline and grain-boundary regions of the samples allowed us to isolate two contributions of low-field magnetoresistance in manganites. One of them is associated with the spin-orbit effect, i.e. the anisotropic magnetoresistance of ferromagnetic compounds, and the other one is related to spin-disorder regions at the grain boundary. Complementary x-ray diffraction, ferromagnetic resonance and low temperature magnetization experiments contribute to the characterization of the magnetic anisotropy of the samples and the general comprehension of the problem.

  10. Percolative Theory of Organic Magnetoresistance and Fringe-Field Magnetoresistance

    Science.gov (United States)

    Flatté, Michael E.

    2013-03-01

    A recently-introduced percolation theory for spin transport and magnetoresistance in organic semiconductors describes the effects of spin dynamics on hopping transport by considering changes in the effective density of hopping sites, a key quantity determining the properties of percolative transport. Increases in the spin-flip rate open up ``spin-blocked'' pathways to become viable conduction channels and hence, as the spin-flip rate changes with magnetic field, produce magnetoresistance. Features of this percolative magnetoresistance can be found analytically in several regimes, and agree with measurements of the shape and saturation of measured magnetoresistance curves. We find that the threshold hopping distance is analogous to the branching parameter of a phenomenological two-site model, and that the distinction between slow and fast hopping is contingent on the threshold hopping distance. Regimes of slow and fast hopping magnetoresistance are uniquely characterized by their line shapes. Studies of magnetoresistance in known systems with controllable positional disorder would provide an additional stringent test of this theory. Extensions to this theory also describe fringe-field magnetoresistance, which is the influence of fringe magnetic fields from a nearby unsaturated magnetic electrode on the conductance of an organic film. This theory agrees with several key features of the experimental fringe-field magnetoresistance, including the applied fields where the magnetoresistance reaches extrema, the applied field range of large magnetoresistance effects from the fringe fields, and the sign of the effect. All work done in collaboration with N. J. Harmon, and fringe-field magnetoresistance work in collaboration also with F. Macià, F. Wang, M. Wohlgenannt and A. D. Kent. This work was supported by an ARO MURI.

  11. The MAGIC of CINEMA: first in-flight science results from a miniaturised anisotropic magnetoresistive magnetometer

    Science.gov (United States)

    Archer, M. O.; Horbury, T. S.; Brown, P.; Eastwood, J. P.; Oddy, T. M.; Whiteside, B. J.; Sample, J. G.

    2015-06-01

    We present the first in-flight results from a novel miniaturised anisotropic magnetoresistive space magnetometer, MAGIC (MAGnetometer from Imperial College), aboard the first CINEMA (CubeSat for Ions, Neutrals, Electrons and MAgnetic fields) spacecraft in low Earth orbit. An attitude-independent calibration technique is detailed using the International Geomagnetic Reference Field (IGRF), which is temperature dependent in the case of the outboard sensor. We show that the sensors accurately measure the expected absolute field to within 2% in attitude mode and 1% in science mode. Using a simple method we are able to estimate the spacecraft's attitude using the magnetometer only, thus characterising CINEMA's spin, precession and nutation. Finally, we show that the outboard sensor is capable of detecting transient physical signals with amplitudes of ~ 20-60 nT. These include field-aligned currents at the auroral oval, qualitatively similar to previous observations, which agree in location with measurements from the DMSP (Defense Meteorological Satellite Program) and POES (Polar-orbiting Operational Environmental Satellites) spacecraft. Thus, we demonstrate and discuss the potential science capabilities of the MAGIC instrument onboard a CubeSat platform.

  12. Anisotropic magnetoresistance across Verwey transition in charge ordered Fe3O4 epitaxial films

    KAUST Repository

    Liu, Xiang

    2017-12-26

    The anisotropic magnetoresistance (AMR) near the Verwey temperature (T-V) is investigated in charge ordered Fe3O4 epitaxial films. When the temperature continuously decreases below T-V, the symmetry of AMR in Fe3O4(100) film evolves from twofold to fourfold at a magnetic field of 50 kOe, where the magnetic field is parallel to the film surface, whereas AMR in Fe3O4(111) film maintains twofold symmetry. By analyzing AMR below T-V, it is found that the Verwey transition contains two steps, including a fast charge ordering process and a continuous formation process of trimeron, which is comfirmed by the temperature-dependent Raman spectra. Just below T-V, the twofold AMR in Fe3O4(100) film originates from uniaxial magnetic anisotropy. The fourfold AMR at a lower temperature can be ascribed to the in-plane trimerons. By comparing the AMR in the films with two orientations, it is found that the trimeron shows a smaller resistivity in a parallel magnetic field. The field-dependent AMR results show that the trimeron-sensitive field has a minimum threshold of about 2 kOe.

  13. Colossal magnetoresistance

    International Nuclear Information System (INIS)

    Fontcuberta, J.

    1999-01-01

    In 1986 Alex Mueller and Georg Bednorz of IBM Zurich discovered high-temperature superconductivity in copper-based oxides. This finding, which was rewarded with the Nobel Prize for Physics in the following year, triggered intense research into the properties of the transition metal oxides. Since then scientists have questioned the very nature of the metallic state in these materials. A few years after the initial discovery, in 1993, more excitement greeted reports that certain manganese oxides showed a huge change in electrical resistivity when a magnetic field was applied. This effect is generally known as magnetoresistance, but the resistivity change observed in these oxides was so large that it could not be compared with any other forms of magnetoresistance. The effect observed in these materials the manganese perovskites was therefore dubbed ''colossal'' magnetoresistance to distinguish it from the giant magnetoresistance observed in magnetic multilayers. In this article the author explains why magnetoresistance is an expanding field of physics research. (UK)

  14. Single nucleotide polymorphism (SNP) detection on a magnetoresistive sensor

    DEFF Research Database (Denmark)

    Rizzi, Giovanni; Østerberg, Frederik Westergaard; Dufva, Martin

    2013-01-01

    We present a magnetoresistive sensor platform for hybridization assays and demonstrate its applicability on single nucleotide polymorphism (SNP) genotyping. The sensor relies on anisotropic magnetoresistance in a new geometry with a local negative reference and uses the magnetic field from...... the sensor bias current to magnetize magnetic beads in the vicinity of the sensor. The method allows for real-time measurements of the specific bead binding to the sensor surface during DNA hybridization and washing. Compared to other magnetic biosensing platforms, our approach eliminates the need...... for external electromagnets and thus allows for miniaturization of the sensor platform....

  15. Anisotropic magnetoresistance and spin polarization of La0.7Sr0.3MnO3/SrTiO3 superlattices

    International Nuclear Information System (INIS)

    Wang, L.M.; Guo, C.-C.

    2005-01-01

    The crystalline structure, anisotropic magnetoresistance (AMR), and magnetization of La 0.7 Sr 0.3 MnO 3 /SrTiO 3 (LSMO/STO) superlattices grown by a rf sputtering system are systematically analyzed to study the spin polarization of manganite at interfaces. The presence of positive low-temperature AMR in LSMO/STO superlattices implies that two bands of majority and minority character contribute to the transport properties, leading to a reduced spin polarization. Furthermore, the magnetization of superlattices follows the T 3/2 law and decays more quickly as the thickness ratio d STO /d LSMO increases, corresponding to a reduced exchange coupling. The results clearly show that the spin polarization is strongly correlated with the influence of interface-induced strain on the structure

  16. The MAGIC of CINEMA: first in-flight science results from a miniaturised anisotropic magnetoresistive magnetometer

    Directory of Open Access Journals (Sweden)

    M. O. Archer

    2015-06-01

    Full Text Available We present the first in-flight results from a novel miniaturised anisotropic magnetoresistive space magnetometer, MAGIC (MAGnetometer from Imperial College, aboard the first CINEMA (CubeSat for Ions, Neutrals, Electrons and MAgnetic fields spacecraft in low Earth orbit. An attitude-independent calibration technique is detailed using the International Geomagnetic Reference Field (IGRF, which is temperature dependent in the case of the outboard sensor. We show that the sensors accurately measure the expected absolute field to within 2% in attitude mode and 1% in science mode. Using a simple method we are able to estimate the spacecraft's attitude using the magnetometer only, thus characterising CINEMA's spin, precession and nutation. Finally, we show that the outboard sensor is capable of detecting transient physical signals with amplitudes of ~ 20–60 nT. These include field-aligned currents at the auroral oval, qualitatively similar to previous observations, which agree in location with measurements from the DMSP (Defense Meteorological Satellite Program and POES (Polar-orbiting Operational Environmental Satellites spacecraft. Thus, we demonstrate and discuss the potential science capabilities of the MAGIC instrument onboard a CubeSat platform.

  17. Temperature-Dependent Three-Dimensional Anisotropy of the Magnetoresistance in WTe_{2}.

    Science.gov (United States)

    Thoutam, L R; Wang, Y L; Xiao, Z L; Das, S; Luican-Mayer, A; Divan, R; Crabtree, G W; Kwok, W K

    2015-07-24

    Extremely large magnetoresistance (XMR) was recently discovered in WTe_{2}, triggering extensive research on this material regarding the XMR origin. Since WTe_{2} is a layered compound with metal layers sandwiched between adjacent insulating chalcogenide layers, this material has been considered to be electronically two-dimensional (2D). Here we report two new findings on WTe_{2}: (1) WTe_{2} is electronically 3D with a mass anisotropy as low as 2, as revealed by the 3D scaling behavior of the resistance R(H,θ)=R(ϵ_{θ}H) with ϵ_{θ}=(cos^{2}θ+γ^{-2}sin^{2}θ)^{1/2}, θ being the magnetic field angle with respect to the c axis of the crystal and γ being the mass anisotropy and (2) the mass anisotropy γ varies with temperature and follows the magnetoresistance behavior of the Fermi liquid state. Our results not only provide a general scaling approach for the anisotropic magnetoresistance but also are crucial for correctly understanding the electronic properties of WTe_{2}, including the origin of the remarkable "turn-on" behavior in the resistance versus temperature curve, which has been widely observed in many materials and assumed to be a metal-insulator transition.

  18. Interfacial scattering effect on anisotropic magnetoresistance and anomalous Hall effect in Ta/Fe multilayers

    KAUST Repository

    Zhang, Qiang

    2017-12-26

    The effect of interfacial scattering on anisotropic magnetoresistance (AMR) and anomalous Hall effect (AHE) was studied in the (Ta12n/Fe36n)n multilayers, where the numbers give the thickness in nanometer and n is an integer from 1 to 12. The multilayer structure has been confirmed by the XRR spectra and STEM images of cross-sections. The magneto-transport properties were measured by four-point probe method in Hall bar shaped samples in the temperature range of 5 - 300 K. The AMR increases with n, which could be ascribed to the interfacial spin-orbit scattering. At 5 K, the longitudinal resistivity (ρ) increases by 6.4 times and the anomalous Hall resistivity (ρ) increases by 49.4 times from n =1 to n =12, indicative of the interfacial scattering effect. The skew-scattering, side-jump and intrinsic contributions to the AHE were separated successfully. As n increases from 1 to 12, the intrinsic contribution decreases because of the decaying crystallinity or finite size effect and the intrinsic contribution dominated the AHE for all samples. The side jump changes from negative to positive because the interfacial scattering and intralayer scattering in Fe layers both contribute to side jump in the AHE but with opposite sign.

  19. Large magnetoresistance in Er7Rh3

    International Nuclear Information System (INIS)

    Sengupta, Kaushik; Sampathkumaran, E.V.

    2005-01-01

    The compound Er 2 Rh 3 has been known to order antiferromagnetically below (T N =14K), and to exhibit a change in the sign of temperature coefficient of electrical resistivity (ρ) in the paramagnetic state around 120 K. Here we report the influence of external magnetic field (H) on the ρ(T) behavior of this compound (1.8-300 K). While the ρ behavior in the paramagnetic state, qualitatively speaking, is found to be robust to the application of H, the magnitude of the magnetoresistance (MR) is significant for moderate applications of H, even at temperatures for above T N untypical of metallic systems. In addition, large values are observed in the magnetically ordered state. (author)

  20. Molecular beam epitaxy of single crystal colossal magnetoresistive material

    International Nuclear Information System (INIS)

    Eckstein, J.N.; Bozovic, I.; Rzchowski, M.; O'Donnell, J.; Hinaus, B.; Onellion, M.

    1996-01-01

    The authors have grown films of (LaSr)MnO 3 (LSMO) and (LaCa)MnO 3 (LCMO) using atomic layer-by-layer molecular beam epitaxy (ALL-MBE). Depending on growth conditions, substrate lattice constant and the exact cation stoichiometry, the films are either pseudomorphic or strain relaxed. The pseudomorphic films show atomically flat surfaces, with a unit cell terrace structure that is a replica of that observed on the slightly vicinal substrates, while the strain relaxed films show bumpy surfaces correlated with a dislocation network. All films show tetragonal structure and exhibit anisotropic magnetoresistance, with a low field response, (1/R)(dR/dH) as large as 5 T -1

  1. Nonmonotonic and anisotropic magnetoresistance effect in antiferromagnet CaMn2Bi2

    Science.gov (United States)

    Kawaguchi, N.; Urata, T.; Hatano, T.; Iida, K.; Ikuta, H.

    2018-04-01

    We found a large and unique magnetoresistance (MR) effect for CaMn2Bi2 . When the magnetic field was applied along the crystallographic c axis at low temperatures, the resistivity increased with the magnetic field and the MR ratio reached several hundred percent, but then it decreased with further increasing the applied field. In addition, the angle dependence measurement revealed a strong anisotropy. This compound is an antiferromagnetic semiconductor with a narrow band gap, and Mn atoms form a corrugated honeycomb lattice. Therefore, a frustration among the magnetic moments is expected, and we propose that our observations can be understood by a nonmonotonic modulation of magnetic fluctuation under the magnetic field.

  2. Large positive magnetoresistance in intermetallic compound NdCo2Si2

    Science.gov (United States)

    Roy Chowdhury, R.; Dhara, S.; Das, I.; Bandyopadhyay, B.; Rawat, R.

    2018-04-01

    The magnetic, magneto-transport and magnetocaloric properties of antiferromagnetic intermetallic compound NdCo2Si2 (TN = 32K) have been studied. The compound yields a positive magnetoresistance (MR) of about ∼ 123 % at ∼ 5K in 8 T magnetic field. The MR value is significantly large vis - a - vis earlier reports of large MR in intermetallic compounds, and possibly associated with the changes in magnetic structure of the compound. The large MR value can be explained in terms of field induced pseudo-gaps on Fermi surface.

  3. High electron mobility and large magnetoresistance in the half-Heusler semimetal LuPtBi

    KAUST Repository

    Hou, Zhipeng; Wang, Wenhong; Xu, Guizhou; Zhang, Xiaoming; Wei, Zhiyang; Shen, Shipeng; Liu, Enke; Yao, Yuan; Chai, Yisheng; Sun, Young; Xi, Xuekui; Wang, Wenquan; Liu, Zhongyuan; Wu, Guangheng; Zhang, Xixiang

    2015-01-01

    Materials with high carrier mobility showing large magnetoresistance (MR) have recently received much attention because of potential applications in future high-performance magnetoelectric devices. Here, we report on an electron-hole

  4. Large linear magnetoresistance in a new Dirac material BaMnBi2

    International Nuclear Information System (INIS)

    Wang Yi-Yan; Yu Qiao-He; Xia Tian-Long

    2016-01-01

    Dirac semimetal is a class of materials that host Dirac fermions as emergent quasi-particles. Dirac cone-type band structure can bring interesting properties such as quantum linear magnetoresistance and large mobility in the materials. In this paper, we report the synthesis of high quality single crystals of BaMnBi 2 and investigate the transport properties of the samples. BaMnBi 2 is a metal with an antiferromagnetic transition at T N = 288 K. The temperature dependence of magnetization displays different behavior from CaMnBi 2 and SrMnBi 2 , which suggests the possible different magnetic structure of BaMnBi 2 . The Hall data reveals electron-type carriers and a mobility μ (5 K) = 1500 cm 2 /V·s. Angle-dependent magnetoresistance reveals the quasi-two-dimensional (2D) Fermi surface in BaMnBi 2 . A crossover from semiclassical MR ∼ H 2 dependence in low field to MR ∼ H dependence in high field, which is attributed to the quantum limit of Dirac fermions, has been observed in magnetoresistance. Our results indicate the existence of Dirac fermions in BaMnBi 2 . (rapid communication)

  5. Extremely high magnetoresistance and conductivity in the type-II Weyl semimetals WP2 and MoP2.

    Science.gov (United States)

    Kumar, Nitesh; Sun, Yan; Xu, Nan; Manna, Kaustuv; Yao, Mengyu; Süss, Vicky; Leermakers, Inge; Young, Olga; Förster, Tobias; Schmidt, Marcus; Borrmann, Horst; Yan, Binghai; Zeitler, Uli; Shi, Ming; Felser, Claudia; Shekhar, Chandra

    2017-11-21

    The peculiar band structure of semimetals exhibiting Dirac and Weyl crossings can lead to spectacular electronic properties such as large mobilities accompanied by extremely high magnetoresistance. In particular, two closely neighboring Weyl points of the same chirality are protected from annihilation by structural distortions or defects, thereby significantly reducing the scattering probability between them. Here we present the electronic properties of the transition metal diphosphides, WP 2 and MoP 2 , which are type-II Weyl semimetals with robust Weyl points by transport, angle resolved photoemission spectroscopy and first principles calculations. Our single crystals of WP 2 display an extremely low residual low-temperature resistivity of 3 nΩ cm accompanied by an enormous and highly anisotropic magnetoresistance above 200 million % at 63 T and 2.5 K. We observe a large suppression of charge carrier backscattering in WP 2 from transport measurements. These properties are likely a consequence of the novel Weyl fermions expressed in this compound.

  6. Magnetic anisotropy and anisotropic magnetoresistance of (Ga,Mn)As Layers on (113)A GaAs

    Energy Technology Data Exchange (ETDEWEB)

    Donhauser, Daniela; Dreher, Lukas; Daeubler, Joachim; Glunk, Michael; Rapp, Christoph; Schoch, Wladimir; Sauer, Rolf; Limmer, Wolfgang [Institut fuer Halbleiterphysik, Universitaet Ulm (Germany)

    2009-07-01

    We study the magnetic anisotropy and the anisotropic magnetoresistance of compressively strained (Ga,Mn)As films with various Mn concentrations, grown on (113)A-oriented GaAs substrates. High-resolution x-ray diffraction (HRXRD) studies reveal a monoclinic symmetry of the distorted (113)A layers in agreement with an explicit calculation of the strain tensor. Based on this result, general expressions for the resistivity tensor and the free energy of single-crystalline ferromagnets are derived from a series expansion with respect to the magnetization orientation, including terms up to the fourth order. With these expressions we are able to model the measured angular dependences of our magnetotransport data with the assumption of a single ferromagnetic domain model. In order to quantitatively derive the resistivity and anisotropy parameters the longitudinal and transverse resistivities are experimentally studied for magnetic fields rotated within the (113), (33 anti 2), and (anti 110) plane at various field strengths. It turned out that some of the resistivity parameters significantly depend on the strength of the external magnetic field. Furthermore we found that the layers exhibit a uniaxial anisotropy along the [001] crystallographic axis, which can be theoretically explained based on the explicit form of the strain tensor.

  7. Large, Linear, and Tunable Positive Magnetoresistance of Mechanically Stable Graphene Foam-Toward High-Performance Magnetic Field Sensors.

    Science.gov (United States)

    Sagar, Rizwan Ur Rehman; Galluzzi, Massimiliano; Wan, Caihua; Shehzad, Khurram; Navale, Sachin T; Anwar, Tauseef; Mane, Rajaram S; Piao, Hong-Guang; Ali, Abid; Stadler, Florian J

    2017-01-18

    Here, we present the first observation of magneto-transport properties of graphene foam (GF) composed of a few layers in a wide temperature range of 2-300 K. Large room-temperature linear positive magnetoresistance (PMR ≈ 171% at B ≈ 9 T) has been detected. The largest PMR (∼213%) has been achieved at 2 K under a magnetic field of 9 T, which can be tuned by the addition of poly(methyl methacrylate) to the porous structure of the foam. This remarkable magnetoresistance may be the result of quadratic magnetoresistance. The excellent magneto-transport properties of GF open a way toward three-dimensional graphene-based magnetoelectronic devices.

  8. Large tunneling magnetoresistance in octahedral Fe3O4 nanoparticles

    Directory of Open Access Journals (Sweden)

    Arijit Mitra

    2016-05-01

    Full Text Available We have observed large tunneling Magnetoresistance (TMR in amine functionalized octahedral nanoparticle assemblies. Amine monolayer on the surface of nanoparticles acts as an insulating barrier between the semimetal Fe3O4 nanoparticles and provides multiple tunnel junctions where inter-granular tunneling is plausible. The tunneling magnetoresistance recorded at room temperature is 38% which increases to 69% at 180 K. When the temperature drops below 150 K, coulomb staircase is observed in the current versus voltage characteristics as the charging energy exceeds the thermal energy. A similar study is also carried out with spherical nanoparticles. A 24% TMR is recorded at room temperature which increases to 41% at 180 K for spherical particles. Mössbauer spectra reveal better stoichiometry for octahedral particles which is attainable due to lesser surface disorder and strong amine coupling at the facets of octahedral Fe3O4 nanoparticles. Less stoichiometric defect in octahedral nanoparticles leads to a higher value of spin polarization and therefore larger TMR in octahedral nanoparticles.

  9. Enhanced Magnetoresistance in Molecular Junctions by Geometrical Optimization of Spin-Selective Orbital Hybridization.

    Science.gov (United States)

    Rakhmilevitch, David; Sarkar, Soumyajit; Bitton, Ora; Kronik, Leeor; Tal, Oren

    2016-03-09

    Molecular junctions based on ferromagnetic electrodes allow the study of electronic spin transport near the limit of spintronics miniaturization. However, these junctions reveal moderate magnetoresistance that is sensitive to the orbital structure at their ferromagnet-molecule interfaces. The key structural parameters that should be controlled in order to gain high magnetoresistance have not been established, despite their importance for efficient manipulation of spin transport at the nanoscale. Here, we show that single-molecule junctions based on nickel electrodes and benzene molecules can yield a significant anisotropic magnetoresistance of up to ∼200% near the conductance quantum G0. The measured magnetoresistance is mechanically tuned by changing the distance between the electrodes, revealing a nonmonotonic response to junction elongation. These findings are ascribed with the aid of first-principles calculations to variations in the metal-molecule orientation that can be adjusted to obtain highly spin-selective orbital hybridization. Our results demonstrate the important role of geometrical considerations in determining the spin transport properties of metal-molecule interfaces.

  10. Features of the electric-field distribution in anisotropic semiconductor wafers in a transverse magnetic field

    International Nuclear Information System (INIS)

    Filippov, V. V.; Bormontov, E. N.

    2013-01-01

    A macroscopic model of the Hall effects and magnetoresistance in anisotropic semiconductor wafers is developed. The results obtained by solving the electrodynamic boundary problem allow the potential and eddy currents in anisotropic semiconductors to be calculated at different current-contact locations, depending on the parameters of the sample material’s anisotropy. The results of this study are of great practical importance for investigating the physical properties of anisotropic semiconductors and simulating the electron-transport phenomena in devices based on anisotropic semiconductors

  11. Features of the electric-field distribution in anisotropic semiconductor wafers in a transverse magnetic field

    Energy Technology Data Exchange (ETDEWEB)

    Filippov, V. V., E-mail: wwfilippow@mail.ru [Lipetsk State Pedagogical University (Russian Federation); Bormontov, E. N. [Voronezh State University (Russian Federation)

    2013-07-15

    A macroscopic model of the Hall effects and magnetoresistance in anisotropic semiconductor wafers is developed. The results obtained by solving the electrodynamic boundary problem allow the potential and eddy currents in anisotropic semiconductors to be calculated at different current-contact locations, depending on the parameters of the sample material's anisotropy. The results of this study are of great practical importance for investigating the physical properties of anisotropic semiconductors and simulating the electron-transport phenomena in devices based on anisotropic semiconductors.

  12. Strain driven anisotropic magnetoresistance in antiferromagnetic La0.4Sr0.6MnO3 thin films

    Science.gov (United States)

    Ward, T. Zac; Wong, A. T.; Takamura, Yayoi; Herklotz, Andreas

    2015-03-01

    Antiferromagnets (AFM) are a promising alternative to ferromagnets (FM) in spintronic applications. The reason stems from the fact that at high data storage densities stray fields could destroy FM set states while AFMs would be relatively insensitive to this data corruption. This work presents the first ever example of antiferromagnetic La0.4Sr0.6MnO3 thin films stabilized in different strain states. Strain is found to drive different types of AFM ordering, and these variations in ordering type are shown to have a profound impact on both the magnitude and character of the materials' resistive response to magnetic field direction, or anisotropic magnetoresistance (AMR) behavior (one standard of spintronic suitability). The compressively strained film shows the highest recorded AMR response in an ohmic AFM device of 63%, while the tensile strained film shows a typical AFM AMR of 0.6%. These findings demonstrate the necessity of understanding electron ordering in AFM spintronic applications and provide a new benchmark for AMR response. This work was supported by the U. S. Department of Energy, Office of Science, Basic Energy Sciences, Materials Science and Engineering Division.

  13. Large linear magnetoresistance in a new Dirac material BaMnBi2

    Science.gov (United States)

    Wang, Yi-Yan; Yu, Qiao-He; Xia, Tian-Long

    2016-10-01

    Dirac semimetal is a class of materials that host Dirac fermions as emergent quasi-particles. Dirac cone-type band structure can bring interesting properties such as quantum linear magnetoresistance and large mobility in the materials. In this paper, we report the synthesis of high quality single crystals of BaMnBi2 and investigate the transport properties of the samples. BaMnBi2 is a metal with an antiferromagnetic transition at T N = 288 K. The temperature dependence of magnetization displays different behavior from CaMnBi2 and SrMnBi2, which suggests the possible different magnetic structure of BaMnBi2. The Hall data reveals electron-type carriers and a mobility μ(5 K) = 1500 cm2/V·s. Angle-dependent magnetoresistance reveals the quasi-two-dimensional (2D) Fermi surface in BaMnBi2. A crossover from semiclassical MR ˜ H 2 dependence in low field to MR ˜ H dependence in high field, which is attributed to the quantum limit of Dirac fermions, has been observed in magnetoresistance. Our results indicate the existence of Dirac fermions in BaMnBi2. Project supported by the National Natural Science Foundation of China (Grant No. 11574391), the Fundamental Research Funds for the Central Universities, and the Research Funds of Renmin University of China (Grant No. 14XNLQ07).

  14. Anomalous magnetoresistance in the spinel superconductor LiTi2O4.

    Science.gov (United States)

    Jin, K; He, G; Zhang, X; Maruyama, S; Yasui, S; Suchoski, R; Shin, J; Jiang, Y; Yu, H S; Yuan, J; Shan, L; Kusmartsev, F V; Greene, R L; Takeuchi, I

    2015-05-20

    LiTi2O4 is a unique compound in that it is the only known spinel oxide superconductor. The lack of high quality single crystals has thus far prevented systematic investigations of its transport properties. Here we report a careful study of transport and tunnelling spectroscopy in epitaxial LiTi2O4 thin films. An unusual magnetoresistance is observed which changes from nearly isotropic negative to prominently anisotropic positive as the temperature is decreased. We present evidence that shows that the negative magnetoresistance likely stems from the suppression of local spin fluctuations or spin-orbit scattering centres. The positive magnetoresistance suggests the presence of an orbital-related state, also supported by the fact that the superconducting energy gap decreases as a quadratic function of magnetic field. These observations indicate that the spin-orbital fluctuations play an important role in LiTi2O4 in a manner similar to high-temperature superconductors.

  15. Extremely large magnetoresistance and Kohler's rule in PdSn4: A complete study of thermodynamic, transport, and band-structure properties

    Science.gov (United States)

    Jo, Na Hyun; Wu, Yun; Wang, Lin-Lin; Orth, Peter P.; Downing, Savannah S.; Manni, Soham; Mou, Dixiang; Johnson, Duane D.; Kaminski, Adam; Bud'ko, Sergey L.; Canfield, Paul C.

    2017-10-01

    The recently discovered material PtSn4 is known to exhibit extremely large magnetoresistance (XMR) that also manifests Dirac arc nodes on the surface. PdSn4 is isostructural to PtSn4 with the same electron count. We report on the physical properties of high-quality single crystals of PdSn4 including specific heat, temperature- and magnetic-field-dependent resistivity and magnetization, and electronic band-structure properties obtained from angle-resolved photoemission spectroscopy (ARPES). We observe that PdSn4 has physical properties that are qualitatively similar to those of PtSn4, but find also pronounced differences. Importantly, the Dirac arc node surface state of PtSn4 is gapped out for PdSn4. By comparing these similar compounds, we address the origin of the extremely large magnetoresistance in PdSn4 and PtSn4; based on detailed analysis of the magnetoresistivity ρ (H ,T ) , we conclude that neither the carrier compensation nor the Dirac arc node surface state are the primary reason for the extremely large magnetoresistance. On the other hand, we find that, surprisingly, Kohler's rule scaling of the magnetoresistance, which describes a self-similarity of the field-induced orbital electronic motion across different length scales and is derived for a simple electronic response of metals to an applied magnetic field is obeyed over the full range of temperatures and field strengths that we explore.

  16. Dramatically decreased magnetoresistance in non-stoichiometric WTe2 crystals.

    Science.gov (United States)

    Lv, Yang-Yang; Zhang, Bin-Bin; Li, Xiao; Pang, Bin; Zhang, Fan; Lin, Da-Jun; Zhou, Jian; Yao, Shu-Hua; Chen, Y B; Zhang, Shan-Tao; Lu, Minghui; Liu, Zhongkai; Chen, Yulin; Chen, Yan-Feng

    2016-05-27

    Recently, the layered semimetal WTe2 has attracted renewed interest owing to the observation of a non-saturating and giant positive magnetoresistance (~10(5)%), which can be useful for magnetic memory and spintronic devices. However, the underlying mechanisms of the giant magnetoresistance are still under hot debate. Herein, we grew the stoichiometric and non-stoichiometric WTe2 crystals to test the robustness of giant magnetoresistance. The stoichiometric WTe2 crystals have magnetoresistance as large as 3100% at 2 K and 9-Tesla magnetic field. However, only 71% and 13% magnetoresistance in the most non-stoichiometry (WTe1.80) and the highest Mo isovalent substitution samples (W0.7Mo0.3Te2) are observed, respectively. Analysis of the magnetic-field dependent magnetoresistance of non-stoichiometric WTe2 crystals substantiates that both the large electron-hole concentration asymmetry and decreased carrier mobility, induced by non-stoichiometry, synergistically lead to the decreased magnetoresistance. This work sheds more light on the origin of giant magnetoresistance observed in WTe2.

  17. Giant magnetoresistance through a single molecule.

    Science.gov (United States)

    Schmaus, Stefan; Bagrets, Alexei; Nahas, Yasmine; Yamada, Toyo K; Bork, Annika; Bowen, Martin; Beaurepaire, Eric; Evers, Ferdinand; Wulfhekel, Wulf

    2011-03-01

    Magnetoresistance is a change in the resistance of a material system caused by an applied magnetic field. Giant magnetoresistance occurs in structures containing ferromagnetic contacts separated by a metallic non-magnetic spacer, and is now the basis of read heads for hard drives and for new forms of random access memory. Using an insulator (for example, a molecular thin film) rather than a metal as the spacer gives rise to tunnelling magnetoresistance, which typically produces a larger change in resistance for a given magnetic field strength, but also yields higher resistances, which are a disadvantage for real device operation. Here, we demonstrate giant magnetoresistance across a single, non-magnetic hydrogen phthalocyanine molecule contacted by the ferromagnetic tip of a scanning tunnelling microscope. We measure the magnetoresistance to be 60% and the conductance to be 0.26G(0), where G(0) is the quantum of conductance. Theoretical analysis identifies spin-dependent hybridization of molecular and electrode orbitals as the cause of the large magnetoresistance.

  18. New type magnetoresistance in Co/Si systems

    International Nuclear Information System (INIS)

    Honda, S.; Ishikawa, T.; Takai, K.; Mitarai, Y.; Harada, H.

    2005-01-01

    The magnetoresistance (MR) properties in both the sputter-deposited Co/Si multilayers and the system consisting of Co evaporated on the anodized Si have been examined. In the Co/Si multilayers, at room temperature both the sharp ordinary magnetoresistance (OMR) and the negative granular-type giant magnetoresistance (GMR) appear, while at low temperatures only the large OMR of about 3.5% is observed for in-plane field. In the Co/anodized-Si system, at room temperature the MR is negligibly small, while it increases steeply with decreasing temperature and very large OMR of about 22% is obtained at 110 K for perpendicular field

  19. Vortex dynamics in supraconductors in the presence of anisotropic pinning

    International Nuclear Information System (INIS)

    Soroka, O.K.

    2004-01-01

    Vortex dynamics in two different classes of superconductors with anisotropic unidirected pinning sites was experimentally investigated by magnetoresistivity measurements: YBCO-films with unidirected twins and Nb-films deposited on faceted Al 2 O 3 substrate surfaces. For the interpretation of the experimental results a theoretical model based on the Fokker-Planck equation was used. It was proved by X-ray measurements that YBCO films prepared on (001) NdGaO 3 substrates exhibit only one twin orientation in contrast to YBCO films grown on (100) SrTiO 3 substrates. The magnetoresistivity measurements of the YBCO films with unidirected twin boundaries revealed the existence of two new magnetoresistivity components, which is a characteristic feature of a guided vortex motion: an odd longitudinal component with respect to the magnetic field sign reversal and an even transversal component. However, due to the small coherence length in YBCO and the higher density of point-like defects comparing to high-quality YBCO single crystals, the strength of the isotropic point pinning was comparable with the strength of the pinning produced by twins. This smeared out all e ects caused by the pinning anisotropy. The behaviour of the odd longitudinal component was found to be independent of the transport current direction with respect to the twin planes. The magnetoresistivity measurements of faceted Nb films demonstrated the appearance of an odd longitudinal and even transversal component of the magnetoresistivity. The temperature and magnetic field dependences of all relevant magnetoresistivity components were measured. The angles between the average vortex velocity vector and the transport current direction calculated from the experimental data for the different transport current orientations with respect to the facet ridges showed that the vortices moved indeed along the facet ridges. An anomalous Hall effect, i.e. a sign change of the odd transversal magnetoresistivity, has been

  20. Domain wall magnetoresistance in BiFeO3 thin films measured by scanning probe microscopy

    NARCIS (Netherlands)

    Domingo, N.; Farokhipoor, S.; Santiso, J.; Noheda, B.; Catalan, G.

    2017-01-01

    We measure the magnetotransport properties of individual 71 degrees domain walls in multiferroic BiFeO3 by means of conductive-atomic force microscopy (C-AFM) in the presence of magnetic fields up to one Tesla. The results suggest anisotropic magnetoresistance at room temperature, with the sign of

  1. Transverse anisotropic magnetoresistance effects in pseudo-single-crystal γ′-Fe4N thin films

    Directory of Open Access Journals (Sweden)

    Kazuki Kabara

    2016-05-01

    Full Text Available Transverse anisotropic magnetoresistance (AMR effects, for which magnetization is rotated in an orthogonal plane to the current direction, were investigated at various temperatures, in order to clarify the structural transformation from a cubic to a tetragonal symmetry in a pseudo-single-crystal Fe4N film, which is predicted from the usual in-plane AMR measurements by the theory taking into account the spin-orbit interaction and crystal field splitting of 3d bands. According to a phenomenological theory of AMR, which derives only from the crystal symmetry, a cos 2θ component ( C 2 tr exists in transverse AMR curves for a tetragonal system but does not for a cubic system. In the Fe4N film, the C 2 tr shows a positive small value (0.12% from 300 K to 50 K. However, the C 2 t r increases to negative value below 50 K and reaches to -2% at 5 K. The drastic increasing of the C 2 tr demonstrates the structural transformation from a cubic to a tetragonal symmetry below 50 K in the Fe4N film. In addition, the out-of-plane and in-plane lattice constants (c and a were precisely determined with X-ray diffraction at room temperature using the Nelson-Riely function. As a result, the positive small C 2 t r above 50 K is attributed to a slightly distorted Fe4N lattice (c/a = 1.002.

  2. Magnetoresistance in Hybrid Pt/CoFe2O4 Bilayers Controlled by Competing Spin Accumulation and Interfacial Chemical Reconstruction.

    Science.gov (United States)

    Vasili, Hari Babu; Gamino, Matheus; Gàzquez, Jaume; Sánchez, Florencio; Valvidares, Manuel; Gargiani, Pierluigi; Pellegrin, Eric; Fontcuberta, Josep

    2018-04-11

    Pure spin currents have potential for use in energy-friendly spintronics. They can be generated by a flow of charge along a nonmagnetic metal with large spin-orbit coupling. This produces a spin accumulation at the surfaces, controllable by the magnetization of an adjacent ferromagnetic layer. Paramagnetic metals typically used are close to ferromagnetic instability and thus magnetic proximity effects can contribute to the observed angular-dependent magnetoresistance (ADMR). As interface phenomena govern the spin conductance across the metal/ferromagnetic-insulator heterostructures, unraveling these distinct contributions is pivotal for a full understanding of spin current conductance. Here, we report X-ray absorption and magnetic circular dichroism (XMCD) at Pt M and (Co, Fe) L absorption edges and atomically resolved energy electron loss spectroscopy (EELS) data of Pt/CoFe 2 O 4 bilayers, where CoFe 2 O 4 layers have been capped by Pt grown at different temperatures. It was found that the ADMR differs dramatically, dominated either by spin Hall magnetoresistance (SMR) associated with the spin Hall effect or by anisotropic magnetoresistance. The XMCD and EELS data indicate that the Pt layer grown at room temperature does not display any magnetic moment, whereas when grown at a higher temperature, it becomes magnetic due to interfacial Pt-(Co, Fe) alloying. These results enable differentiation of spin accumulation from interfacial chemical reconstructions and tailoring of the angular-dependent magnetoresistance.

  3. Extremely large magnetoresistance and Kohler's rule in PdSn4 : A complete study of thermodynamic, transport, and band-structure properties

    International Nuclear Information System (INIS)

    Jo, Na Hyun; Wu, Yun; Wang, Lin-Lin; Orth, Peter P.; Downing, Savannah S.

    2017-01-01

    The recently discovered material PtSn 4 is known to exhibit extremely large magnetoresistance (XMR) that also manifests Dirac arc nodes on the surface. PdSn 4 is isostructural to PtSn 4 with the same electron count. Here, we report on the physical properties of high-quality single crystals of PdSn 4 including specific heat, temperature- and magnetic-field-dependent resistivity and magnetization, and electronic band-structure properties obtained from angle-resolved photoemission spectroscopy (ARPES). We observe that PdSn 4 has physical properties that are qualitatively similar to those of PtSn 4 , but find also pronounced differences. Importantly, the Dirac arc node surface state of PtSn 4 is gapped out for PdSn 4 . By comparing these similar compounds, we address the origin of the extremely large magnetoresistance in PdSn 4 and PtSn 4 ; based on detailed analysis of the magnetoresistivity ρ (H , T) , we conclude that neither the carrier compensation nor the Dirac arc node surface state are the primary reason for the extremely large magnetoresistance. On the other hand, we also find that, surprisingly, Kohler's rule scaling of the magnetoresistance, which describes a self-similarity of the field-induced orbital electronic motion across different length scales and is derived for a simple electronic response of metals to an applied magnetic field is obeyed over the full range of temperatures and field strengths that we explore.

  4. Evolution and sign control of square-wave-like anisotropic magneto-resistance in spatially confined La{sub 0.3}Pr{sub 0.4}Ca{sub 0.3}MnO{sub 3}/LaAlO{sub 3}(001) manganite thin films

    Energy Technology Data Exchange (ETDEWEB)

    Alagoz, H. S., E-mail: alagoz@ualberta.ca; Jeon, J.; Keating, S.; Chow, K. H., E-mail: khchow@ualberta.ca; Jung, J., E-mail: jjung@ualberta.ca [Department of Physics, University of Alberta, Edmonton, Alberta T6G 2E1 (Canada)

    2016-04-14

    We investigated magneto-transport properties of a compressively strained spatially confined La{sub 0.3}Pr{sub 0.4}Ca{sub 0.3}MnO{sub 3} (LPCMO) thin film micro-bridge deposited on LaAlO{sub 3}. Angular dependence of the magneto-resistance R(θ) of this bridge, where θ is the angle between the magnetic field and the current directions in the film plane, exhibits sharp positive and negative percolation jumps near T{sub MIT}. The sign and the magnitude of these jumps can be tuned using the magnetic field. Such behavior has not been observed in LPCMO micro-bridges subjected to tensile strain, indicating a correlation between the type of the lattice strain, the distribution of electronic domains, and the anisotropic magneto-resistance in spatially confined manganite systems.

  5. Low-field magnetoresistance anisotropy in strained ultrathin Pr0.67Sr0.33MnO3 films

    International Nuclear Information System (INIS)

    Wang, H.S.; Li, Q.

    1999-01-01

    The authors have studied the anisotropic low-field magnetoresistance (LFMR) in ultrathin Pr 0.67 sr 0.33 MnO 3 (PSMO) films epitaxially grown on LaAlO 3 (LAO), STiO 3 (STO), and NdGaO 3 (NGO) substrates which impose compressive, tensile, and nearly-zero strains in the films. The compressively-strained films show a very large negative LFMR in a perpendicular magnetic field and a much smaller MR in a parallel field, while the tensile-strain films show positive LFMR in a perpendicular field and negative MR in a parallel field. The results are interpreted based on the strain-induced magnetic anisotropy

  6. 3000% high-field magnetoresistance in super-lattices of CoFe nanoparticles

    International Nuclear Information System (INIS)

    Tan, Reasmey P.; Carrey, Julian; Respaud, Marc; Desvaux, Celine; Renaud, Philippe; Chaudret, Bruno

    2008-01-01

    We report on magnetotransport measurements on millimeter-large super-lattices of CoFe nanoparticles surrounded by an organic layer. Electrical properties are typical of Coulomb blockade in three-dimensional arrays of nanoparticles. A large high-field magnetoresistance, reaching up to 3000%, is measured between 1.8 and 10 K. This exceeds by two orders of magnitude magnetoresistance values generally measured in arrays of 3d transition metal ferromagnetic nanoparticles. The magnetoresistance amplitude scales with the magnetic field/temperature ratio and displays an unusual exponential dependency with the applied voltage. The magnetoresistance abruptly disappears below 1.8 K. We propose that the magnetoresistance is due to some individual paramagnetic moments localized between the metallic cores of the nanoparticles, the origin of which is discussed

  7. Theoretical Prediction of a Giant Anisotropic Magnetoresistance in Carbon Nanoscrolls.

    Science.gov (United States)

    Chang, Ching-Hao; Ortix, Carmine

    2017-05-10

    Snake orbits are trajectories of charge carriers curving back and forth that form at an interface where either the magnetic field direction or the charge carrier type are inverted. In ballistic samples, their presence is manifested in the appearance of magnetoconductance oscillations at small magnetic fields. Here we show that signatures of snake orbits can also be found in the opposite diffusive transport regime. We illustrate this by studying the classical magnetotransport properties of carbon tubular structures subject to relatively weak transversal magnetic fields where snake trajectories appear in close proximity to the zero radial field projections. In carbon nanoscrolls, the formation of snake orbits leads to a strongly directional dependent positive magnetoresistance with an anisotropy up to 80%.

  8. Current-induced magnetization switching in atom-thick tungsten engineered perpendicular magnetic tunnel junctions with large tunnel magnetoresistance.

    Science.gov (United States)

    Wang, Mengxing; Cai, Wenlong; Cao, Kaihua; Zhou, Jiaqi; Wrona, Jerzy; Peng, Shouzhong; Yang, Huaiwen; Wei, Jiaqi; Kang, Wang; Zhang, Youguang; Langer, Jürgen; Ocker, Berthold; Fert, Albert; Zhao, Weisheng

    2018-02-14

    Perpendicular magnetic tunnel junctions based on MgO/CoFeB structures are of particular interest for magnetic random-access memories because of their excellent thermal stability, scaling potential, and power dissipation. However, the major challenge of current-induced switching in the nanopillars with both a large tunnel magnetoresistance ratio and a low junction resistance is still to be met. Here, we report spin transfer torque switching in nano-scale perpendicular magnetic tunnel junctions with a magnetoresistance ratio up to 249% and a resistance area product as low as 7.0 Ω µm 2 , which consists of atom-thick W layers and double MgO/CoFeB interfaces. The efficient resonant tunnelling transmission induced by the atom-thick W layers could contribute to the larger magnetoresistance ratio than conventional structures with Ta layers, in addition to the robustness of W layers against high-temperature diffusion during annealing. The critical switching current density could be lower than 3.0 MA cm -2 for devices with a 45-nm radius.

  9. Anisotropic sensor and memory device with a ferromagnetic tunnel barrier as the only magnetic element.

    Science.gov (United States)

    Lόpez-Mir, L; Frontera, C; Aramberri, H; Bouzehouane, K; Cisneros-Fernández, J; Bozzo, B; Balcells, L; Martínez, B

    2018-01-16

    Multiple spin functionalities are probed on Pt/La 2 Co 0.8 Mn 1.2 O 6 /Nb:SrTiO 3 , a device composed by a ferromagnetic insulating barrier sandwiched between non-magnetic electrodes. Uniquely, La 2 Co 0.8 Mn 1.2 O 6 thin films present strong perpendicular magnetic anisotropy of magnetocrystalline origin, property of major interest for spintronics. The junction has an estimated spin-filtering efficiency of 99.7% and tunneling anisotropic magnetoresistance (TAMR) values up to 30% at low temperatures. This remarkable angular dependence of the magnetoresistance is associated with the magnetic anisotropy whose origin lies in the large spin-orbit interaction of Co 2+ which is additionally tuned by the strain of the crystal lattice. Furthermore, we found that the junction can operate as an electrically readable magnetic memory device. The findings of this work demonstrate that a single ferromagnetic insulating barrier with strong magnetocrystalline anisotropy is sufficient for realizing sensor and memory functionalities in a tunneling device based on TAMR.

  10. Anisotropic magnetic phase diagram of Kondo-Lattice compound Ce3Pd20Ge6 with quadrupolar ordering

    International Nuclear Information System (INIS)

    Kitagawa, Jiro; Takeda, Naoya; Ishikawa, Masayasu; Yoshida, Toshiya; Ishiguro, Akiko; Kimura, Noriaki; Komatsubara, Takemi

    1999-01-01

    We have measured the specific heat and the electrical resistivity of Ce 3 Pd 20 Ge 6 in magnetic fields up to 4T applied along three principal directions. The compound shows the large negative magnetoresistance in the quadrupolar phase. The coefficient of the electronic specific heat and T 2 -coefficient of the electrical resistivity are considerably reduced at 4T. The magnetic phase diagram constructed from these measurements suggests the existence of a highly anisotropic interaction between the electric quadrupolar moments and the magnetic dipolar moments. (author)

  11. Recent results on the giant magnetoresistance in magnetic multilayers (anisotropy, thermal variation and CCP-GMR)

    Science.gov (United States)

    Dieny, B.; Granovsky, A.; Vedyaev, A.; Ryzhanova, N.; Cowache, C.; Pereira, L. G.

    1995-12-01

    We present some recent results obtained on the electrical transport properties in magnetic multilayers. Three points are addressed. The first one is an experimental demonstration of the existence of an intrinsic anisotropy of the giant magnetoresistance (GMR). The experiments have been carried out on spin-valve samples for which there is no contribution of the usual anisotropic magnetoresistance to the observed magnetoresistance. The GMR amplitude is found to be larger (lower) in the direction perpendicular (parallel) to the sensing current. The second point concerns a quantitative analysis of the thermal variation of the CIP (current-in-plane) GMR in magnetic multilayers. This analysis is based on a semi-classical theory including the spin-intermixing due to spin-flip scattering by magnons. This approach allows quantitatively evaluation of the respective weights of the various contributions to the thermal decrease in GMR: (i) scattering by magnons in the bulk of the ferromagnetic layers; (ii) phonon scattering in the non-magnetic spacer layer; and (iii) interfacial scattering by paramagnetic interfacial layers which may form as the temperature is increased. The third point is a theoretical investigation of the CPP (current perpendicular to the plane) electrical transport through an interface between two semi-infinite metallic materials. It is shown that when a potential step U exists at such an interface, this step gives rise to an interfacial resistance proportional to U2. It also leads to the existence of large oscillations in the electric fields on both sides of the interface.

  12. Large intragrain magnetoresistance above room temperature in the double perovskite Ba2FeMoO6

    International Nuclear Information System (INIS)

    Maignan, A.; Raveau, B.; Martin, C.; Hervieu, M.

    1999-01-01

    Large intragrain magnetoresistance (MR) in the ordered double perovskite, Ba 2 FeMo 6 , is shown for the first time. The latter appears near T c (340 K), i.e., above room temperature. This effect originates from a double-exchange-like mechanism, based on antiferromagnetic coupling of localized high spin 3d 5 Fe 3+ , and itinerant 4d 1 Mo 5+ species. Besides this bulk MR, low field tunneling MR at lower temperatures (T 2 FeMoO 6 . Such a coexistence of both effects, intragrain and intergrain magnetoresistance, might extend to all members of this double perovskite family, suggesting the possibility of optimizing the MR for working at room temperature in a low magnetic field, by tuning the T c of solid solutions of such perovskites

  13. Anisotropic strains and magnetoresistance of La0.7Ca0.3MnO3

    International Nuclear Information System (INIS)

    Koo, T.Y.; Park, S.H.; Lee, K.; Jeong, Y.H.

    1997-01-01

    Thin films of perovskite manganite La 0.7 Ca 0.3 MnO 3 were grown epitaxially on SrTiO 3 (100), MgO(100) and LaAlO 3 (100) substrates by the pulsed laser deposition method. Microscopic structures of these thin film samples as well as a bulk sample were fully determined by x-ray diffraction measurements. The unit cells of the three films have different shapes, i.e., contracted tetragonal, cubic, and elongated tetragonal for SrTiO 3 , MgO, and LaAlO 3 , respectively, while the unit cell of the bulk is cubic. It is found that the samples with a cubic unit cell show smaller peak magnetoresistance at low fields (approx-lt 1T) than the noncubic ones do. The present result demonstrates that the magnetoresistance of La 0.7 Ca 0.3 MnO 3 at low fields can be controlled by lattice distortion via externally imposed strains. copyright 1997 American Institute of Physics

  14. Extremely large magnetoresistance and electronic structure of TmSb

    Science.gov (United States)

    Wang, Yi-Yan; Zhang, Hongyun; Lu, Xiao-Qin; Sun, Lin-Lin; Xu, Sheng; Lu, Zhong-Yi; Liu, Kai; Zhou, Shuyun; Xia, Tian-Long

    2018-02-01

    We report the magnetotransport properties and the electronic structure of TmSb. TmSb exhibits extremely large transverse magnetoresistance and Shubnikov-de Haas (SdH) oscillation at low temperature and high magnetic field. Interestingly, the split of Fermi surfaces induced by the nonsymmetric spin-orbit interaction has been observed from SdH oscillation. The analysis of the angle-dependent SdH oscillation illustrates the contribution of each Fermi surface to the conductivity. The electronic structure revealed by angle-resolved photoemission spectroscopy (ARPES) and first-principles calculations demonstrates a gap at the X point and the absence of band inversion. Combined with the trivial Berry phase extracted from SdH oscillation and the nearly equal concentrations of electron and hole from Hall measurements, it is suggested that TmSb is a topologically trivial semimetal and the observed XMR originates from the electron-hole compensation and high mobility.

  15. Resistivity dependence of magnetoresistance in Co/ZnO films.

    Science.gov (United States)

    Quan, Zhi-Yong; Zhang, Li; Liu, Wei; Zeng, Hao; Xu, Xiao-Hong

    2014-01-06

    We report the dependence of magnetoresistance effect on resistivity (ρ) in Co/ZnO films deposited by magnetron sputtering at different sputtering pressures with different ZnO contents. The magnitude of the resistivity reflects different carrier transport regimes ranging from metallic to hopping behaviors. Large room-temperature magnetoresistance greater than 8% is obtained in the resistivity range from 0.08 to 0.5 Ω · cm. The magnetoresistance value decreases markedly when the resistivity of the films is less than 0.08 Ω · cm or greater than 0.5 Ω · cm. When 0.08 Ω · cm magnetoresistance effect. When ρ > 0.5 Ω · cm, the spin-independent higher-order hopping (N > 2) comes into play and decreases the tunneling magnetoresistance value. For the samples with ρ magnetoresistance is mainly ascribed to the formation of percolation paths through interconnected elongated metallic Co particles. This observation is significant for the improvement of room-temperature magnetoresistance value for future spintronic devices.

  16. Giant magnetoresistance and extraordinary magnetoresistance in inhomogeneous semiconducting DyNiBi

    OpenAIRE

    Casper, Frederick; Felser, Claudia

    2007-01-01

    The semiconducting half-Heulser compound DyNiBi shows a negative giant magnetoresistance (GMR) below 200 K. Except for a weak deviation, this magnetoresistance scales roughly with the square of the magnetization in the paramagnetic state, and is related to the metal-insulator transition. At low temperature, a positive magnetoresistance is found, which can be suppressed by high fields. The magnitude of the positive magnetoresistance changes slightly with the amount of impurity phase.

  17. Tunnel magnetoresistance of magnetic molecules with spin-vibron coupling

    Directory of Open Access Journals (Sweden)

    Ahmed Kenawy

    2017-05-01

    Full Text Available The effect of molecular vibrations on the tunnel magnetoresistance (TMR of a magnetic tunnel junction with a single spin-anisotropic molecule interconnecting its electrodes is investigated theoretically. We demonstrate that if these vibrations couple at the same time to the charge of tunneling electrons and to the spin of the molecule, the spin anisotropy of such a molecule becomes enhanced. This has, in turn, a profound impact on the TMR of such a device showing that molecular vibrations lead to a significant change of spin-polarized transport, differing for the parallel and antiparallel magnetic configuration of the junction.

  18. Large magnetization and frustration switching of magnetoresistance in the double-perovskite ferrimagnet Mn2FeReO6.

    Science.gov (United States)

    Arévalo-López, Angel M; McNally, Graham M; Attfield, J Paul

    2015-10-05

    Ferrimagnetic A2 BB'O6 double perovskites, such as Sr2 FeMoO6 , are important spin-polarized conductors. Introducing transition metals at the A-sites offers new possibilities to increase magnetization and tune magnetoresistance. Herein we report a ferrimagnetic double perovskite, Mn2 FeReO6 , synthesized at high pressure which has a high Curie temperature of 520 K and magnetizations of up to 5.0 μB which greatly exceed those for other double perovskite ferrimagnets. A novel switching transition is discovered at 75 K where magnetoresistance changes from conventional negative tunneling behavior to large positive values, up to 265 % at 7 T and 20 K. Neutron diffraction shows that the switch is driven by magnetic frustration from antiferromagnetic Mn(2+) spin ordering which cants Fe(3+) and Re(5+) spins and reduces spin-polarization. Ferrimagnetic double perovskites based on A-site Mn(2+) thus offer new opportunities to enhance magnetization and control magnetoresistance in spintronic materials. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  19. Systematic study of doping dependence on linear magnetoresistance in p-PbTe

    International Nuclear Information System (INIS)

    Schneider, J. M.; Chitta, V. A.; Oliveira, N. F.; Peres, M. L.; Castro, S. de; Soares, D. A. W.; Wiedmann, S.; Zeitler, U.; Abramof, E.; Rappl, P. H. O.; Mengui, U. A.

    2014-01-01

    We report on a large linear magnetoresistance effect observed in doped p-PbTe films. While undoped p-PbTe reveals a sublinear magnetoresistance, p-PbTe films doped with BaF 2 exhibit a transition to a nearly perfect linear magnetoresistance behaviour that is persistent up to 30 T. The linear magnetoresistance slope ΔR/ΔB is to a good approximation, independent of temperature. This is in agreement with the theory of Quantum Linear Magnetoresistance. We also performed magnetoresistance simulations using a classical model of linear magnetoresistance. We found that this model fails to explain the experimental data. A systematic study of the doping dependence reveals that the linear magnetoresistance response has a maximum for small BaF 2 doping levels and diminishes rapidly for increasing doping levels. Exploiting the huge impact of doping on the linear magnetoresistance signal could lead to new classes of devices with giant magnetoresistance behavior.

  20. Angle Dependence of the Orbital Magnetoresistance in Bismuth

    Directory of Open Access Journals (Sweden)

    Aurélie Collaudin

    2015-06-01

    Full Text Available We present an extensive study of angle-dependent transverse magnetoresistance in bismuth, with a magnetic field perpendicular to the applied electric current and rotating in three distinct crystallographic planes. The observed angular oscillations are confronted with the expectations of semiclassic transport theory for a multivalley system with anisotropic mobility and the agreement allows us to quantify the components of the mobility tensor for both electrons and holes. A quadratic temperature dependence is resolved. As Hartman argued long ago, this indicates that inelastic resistivity in bismuth is dominated by carrier-carrier scattering. At low temperature and high magnetic field, the threefold symmetry of the lattice is suddenly lost. Specifically, a 2π/3 rotation of magnetic field around the trigonal axis modifies the amplitude of the magnetoresistance below a field-dependent temperature. By following the evolution of this anomaly as a function of temperature and magnetic field, we map the boundary in the (field, temperature plane separating two electronic states. In the less symmetric state, confined to low temperature and high magnetic field, the three Dirac valleys cease to be rotationally invariant. We discuss the possible origins of this spontaneous valley polarization, including a valley-nematic scenario.

  1. Magnetic anisotropies and rotational hysteresis in Ni81Fe19/Fe50Mn50 films: A study by torque magnetometry and anisotropic magnetoresistance

    Science.gov (United States)

    da Silva, O. E.; de Siqueira, J. V.; Kern, P. R.; Garcia, W. J. S.; Beck, F.; Rigue, J. N.; Carara, M.

    2018-04-01

    Exchange bias properties of NiFe/FeMn thin films have been investigated through X-ray diffraction, hysteresis loops, angular measurements of anisotropic magnetoresistance (AMR) and magnetic torque. As first predicted by Meiklejohn and Bean we found a decrease on the bias field as the NiFe layer thickness increases. However such reduction is not as strong as expected and it was attributed to the increase on the number of uncompensed antiferromagnetic spins resulting from the increase on the number of FeMn grains at the interface as the thickness of the NiFe layer is increased. The angular evolution of AMR and the magnetic torque were calculated and compared to the experimental ones using the minimization of the free magnetic energy and finding the magnetization equilibrium angle. The free energy, for each grain of the polycrystalline sample, is composed by the following terms: Zeeman, uniaxial, unidirectional and the rotatable energies. While from the AMR curves we obtain stable anisotropy fields independently on the measuring fields, from the torque curves we obtain increasing values of the uniaxial and rotatable fields, as the measuring field is increased. These results were attributed to the physical origin and sensitivity of the two different techniques. Magnetoresistance is mainly sensitive to the inner portion of the ferromagnetic layer, and the torque brings out information of the whole ferromagnetic layer including the interface of the layers. In this way, we believe that the increase in the uniaxial and rotatable values were due to an increase on the volume of the ferromagnetic layer, near the interfaces, which is made to rotate with the measuring field. Studying the rotational hysteresis by both techniques allows to separately obtain the contributions coming from the inner portion of ferromagnetic layer and from the interface.

  2. Transport theory for disordered multiple-band systems: Anomalous Hall effect and anisotropic magnetoresistance

    Czech Academy of Sciences Publication Activity Database

    Kovalev, A.A.; Tserkovnyak, Y.; Výborný, Karel; Sinova, J.

    2009-01-01

    Roč. 79, č. 19 (2009), 19529/1-19529/19 ISSN 1098-0121 R&D Projects: GA MŠk LC510; GA AV ČR KJB100100802 Institutional research plan: CEZ:AV0Z10100521 Keywords : ferromagnetic materials * Hall effect * magnetoresistance * quasiparticles * spin-orbit interactions * two-dimensional electro n gas Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.475, year: 2009 http://link.aps.org/doi/10.1103/PhysRevB.79.195129

  3. Quasilinear quantum magnetoresistance in pressure-induced nonsymmorphic superconductor chromium arsenide.

    Science.gov (United States)

    Niu, Q; Yu, W C; Yip, K Y; Lim, Z L; Kotegawa, H; Matsuoka, E; Sugawara, H; Tou, H; Yanase, Y; Goh, Swee K

    2017-06-05

    In conventional metals, modification of electron trajectories under magnetic field gives rise to a magnetoresistance that varies quadratically at low field, followed by a saturation at high field for closed orbits on the Fermi surface. Deviations from the conventional behaviour, for example, the observation of a linear magnetoresistance, or a non-saturating magnetoresistance, have been attributed to exotic electron scattering mechanisms. Recently, linear magnetoresistance has been observed in many Dirac materials, in which the electron-electron correlation is relatively weak. The strongly correlated helimagnet CrAs undergoes a quantum phase transition to a nonmagnetic superconductor under pressure. Here we observe, near the magnetic instability, a large and non-saturating quasilinear magnetoresistance from the upper critical field to 14 T at low temperatures. We show that the quasilinear magnetoresistance may arise from an intricate interplay between a nontrivial band crossing protected by nonsymmorphic crystal symmetry and strong magnetic fluctuations.

  4. Angle dependence on the anisotropic magnetoresistance amplitude of a single-contacted Ni nanowire subjected to a thermo-mechanical strain

    Science.gov (United States)

    Melilli, G.; Madon, B.; Wegrowe, J.-E.; Clochard, M.-C.

    2015-12-01

    The effects of thermoelastic and piezoelectric strain of an active track-etched β-PVDF polymer matrix on an electrodeposited single-contacted Ni nanowire (NW) are investigated at the nanoscale by measuring the change of magnetization (i.e. using the inverse magnetostriction effect). The magnetization state is measured locally by anisotropic magnetoresistance (AMR). The ferromagnetic NW plays thus the role of a mechanical probe that allows the effects of mechanical strain to be characterized and described qualitatively and quantitatively. The inverse magnetostriction was found to be responsible for a quasi-disappearance of the AMR signal for a variation of the order of ΔT ≈ 10 K. In other terms, the variation of the magnetization due to the stress compensates the effect of external magnetic field applied on the NW resistance. The induced stress field in a single Ni NW was found 1000 time higher than the bulk stress field (due to thermal expansion measured on the PVDF). This amplification could be attributed to three nanoscopic effects: (1) a stress mismatch between the Ni NW and the membrane, (2) a non-negligible role of the surface tension on Ni NW Young modulus, and (3) the possibility of non-linear stress-strain law. We investigate here the role of these different contributions using track-etched polymer membranes irradiated at various angles (αirrad) leading to, after electrodeposition, embedded Ni NWs of different orientations.

  5. Angle dependence on the anisotropic magnetoresistance amplitude of a single-contacted Ni nanowire subjected to a thermo-mechanical strain

    International Nuclear Information System (INIS)

    Melilli, G.; Madon, B.; Wegrowe, J.-E.; Clochard, M.-C.

    2015-01-01

    The effects of thermoelastic and piezoelectric strain of an active track-etched β-PVDF polymer matrix on an electrodeposited single-contacted Ni nanowire (NW) are investigated at the nanoscale by measuring the change of magnetization (i.e. using the inverse magnetostriction effect). The magnetization state is measured locally by anisotropic magnetoresistance (AMR). The ferromagnetic NW plays thus the role of a mechanical probe that allows the effects of mechanical strain to be characterized and described qualitatively and quantitatively. The inverse magnetostriction was found to be responsible for a quasi-disappearance of the AMR signal for a variation of the order of ΔT ≈ 10 K. In other terms, the variation of the magnetization due to the stress compensates the effect of external magnetic field applied on the NW resistance. The induced stress field in a single Ni NW was found 1000 time higher than the bulk stress field (due to thermal expansion measured on the PVDF). This amplification could be attributed to three nanoscopic effects: (1) a stress mismatch between the Ni NW and the membrane, (2) a non-negligible role of the surface tension on Ni NW Young modulus, and (3) the possibility of non-linear stress–strain law. We investigate here the role of these different contributions using track-etched polymer membranes irradiated at various angles (α irrad ) leading to, after electrodeposition, embedded Ni NWs of different orientations.

  6. Magnetoresistive properties of non-uniform state of antiferromagnetic semiconductors

    International Nuclear Information System (INIS)

    Krivoruchko, V.N.

    1996-01-01

    The phenomenological model of magnetoresistive properties of magneto-non-single-phase state of alloyed magnetic semiconductors is considered using the concept derived for a description of magnetoresistive effects in layered and granular magnetic metals. By assuming that there exists a magneto-non-single state in the manganites having the perovskite structure, it is possible to describe, in the framework of above approach, large magnetoresistive effects of manganite phases with antiferromagnetic order and semiconductor-type conductivity as well as those with antiferromagnetic properties and metallic-type conductivity

  7. Large negative magnetoresistance in reactive sputtered polycrystalline GdNx films

    KAUST Repository

    Mi, W. B.; Guo, Z. B.; Duan, X. F.; Zhang, X. J.; Bai, H. L.

    2013-01-01

    Polycrystalline ferromagnetic GdN x films were fabricated at different N2 flow rates ( fN2 ) to modify N-vacancy concentration so as to study its influence on electrotransport. Metal-semiconductor transition appears at Curie temperature (TC ) of ∼40 K. Temperature-dependent magnetoresistance (MR) shows a peak at T C. The films at fN2  = 5, 10, 15, and 20 sccm show MR of −38%, −42%, −46%, and −86% at 5 K and 50 kOe, respectively. Above 15 K, MR is from colossal MR and from both colossal and tunneling MR below 15 K. The enhanced MR at fN2  = 20 sccm is attributed to large spin polarization of half-metallicity in GdN x with low N vacancies.

  8. Large negative magnetoresistance in reactive sputtered polycrystalline GdNx films

    KAUST Repository

    Mi, W. B.

    2013-06-07

    Polycrystalline ferromagnetic GdN x films were fabricated at different N2 flow rates ( fN2 ) to modify N-vacancy concentration so as to study its influence on electrotransport. Metal-semiconductor transition appears at Curie temperature (TC ) of ∼40 K. Temperature-dependent magnetoresistance (MR) shows a peak at T C. The films at fN2  = 5, 10, 15, and 20 sccm show MR of −38%, −42%, −46%, and −86% at 5 K and 50 kOe, respectively. Above 15 K, MR is from colossal MR and from both colossal and tunneling MR below 15 K. The enhanced MR at fN2  = 20 sccm is attributed to large spin polarization of half-metallicity in GdN x with low N vacancies.

  9. Anisotropic magnetoresistance of spin-orbit coupledcarriers scattered from polarized magnetic impurities

    Czech Academy of Sciences Publication Activity Database

    Trushin, M.; Výborný, Karel; Moraczewski, P.; Kovalev, A.A.; Schliemann, J.; Jungwirth, Tomáš

    2009-01-01

    Roč. 80, č. 13 (2009), 134405/1-134405/14 ISSN 1098-0121 R&D Projects: GA AV ČR KJB100100802; GA AV ČR KAN400100652; GA ČR GEFON/06/E002 EU Projects: European Commission(XE) 215368 - SemiSpinNet; European Commission(XE) 214499 - NAMASTE Grant - others:AV ČR(CZ) AP0801 Program:Akademická prémie - Praemium Academiae Institutional research plan: CEZ:AV0Z10100521 Keywords : Boltzmann equation * conduction bands * enhanced magnetoresistance * Fermi surface * ferromagnetic materials * gallium compounds * III-V semiconductors Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.475, year: 2009 http://link.aps.org/doi/10.1103/PhysRevB.80.134405

  10. Magnetoresistive logic and biochip

    International Nuclear Information System (INIS)

    Brueckl, Hubert; Brzeska, Monika; Brinkmann, Dirk; Schotter, J.Joerg; Reiss, Guenter; Schepper, Willi; Kamp, P.-B.; Becker, Anke

    2004-01-01

    While some magnetoresistive devices based on giant magnetoresistance or spin-dependent tunneling are already commercialized, a new branch of development is evolving towards magnetoresistive logic with magnetic tunnel junctions. Furthermore, the new magnetoelectronic effects show promising properties in magnetoresistive biochips, which are capable of detecting even single molecules (e.g. DNA) by functionalized magnetic markers. The unclear limits of this approach are discussed with two model systems

  11. Effects of disorder on the out-of-plane magnetoresistance in the high-Tc BISCCO compound

    International Nuclear Information System (INIS)

    Khalil, A.E.

    1997-01-01

    An explanation is proposed to account for the observed anisotropic out-of-plane magnetoresistivity of the single crystal high temperature superconductor BISCCO compound. The explanation is based on a dynamic scaling model for conductivity fluctuations in the superconducting matrix. In this model, it is assumed that the c-axis conduction in an applied field parallel to the c-direction occurs through defect-mediated interplanar ''weak links'' which behave as an array of parallel, independently fluctuating, superconducting channels. The model also takes into account the possibility of thermally induced dimensional crossover above which the superconducting layers are effectively decoupled and behave as a quasi two-dimensional system. The predictions of the model are consistent with the magnetoresistance measurements reported for two separate experiments on Bi 2 Sr 2 CaCu 2 O 8 single crystals. (orig.)

  12. Current perpendicular to plane giant magnetoresistance and tunneling magnetoresistance treated with unified model

    NARCIS (Netherlands)

    Jonkers, PAE

    2002-01-01

    The conceptual similarity between current perpendicular to plane giant magnetoresistance (CPP-GMR) and tunneling magnetoresistance (TMR) is exploited by utilizing a unified single-particle model accounting for both types of magnetoresistance. By defining structures composed of ferromagnetic,

  13. Prospect for room temperature tunneling anisotropic magnetoresistance effect: Density of statesanisotropies in CoPt systems

    Czech Academy of Sciences Publication Activity Database

    Shick, Alexander; Máca, František; Mašek, Jan; Jungwirth, Tomáš

    2006-01-01

    Roč. 73, č. 2 (2006), 024418/1-024418/4 ISSN 1098-0121 R&D Projects: GA AV ČR(CZ) IAA100100530 Institutional research plan: CEZ:AV0Z10100521 Keywords : tunneling magnetoresistance * metallic ferromagnets * magnetocrystalline anisotropies Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.107, year: 2006

  14. Modification of magnetoresistance and magnetic properties of Ni thin films by adding Dy interlayer

    Science.gov (United States)

    Vorobiov, S. I.; Shabelnyk, T. M.; Shutylieva, O. V.; Pazukha, I. M.; Chornous, A. M.

    2018-03-01

    The paper reports the influence of dysprosium (Dy) interlayer addition on structure, magnetoresistance and magnetic properties of nickel (Ni) thin films. Trilayer film systems Ni/Dy/Ni have been prepared by alternate electron-beam evaporation. It is demonstrated that all as-prepared and annealed Ni thin films have face-centered cubic structure. The composition of the samples after addition of the Dy interlayer corresponds to the combination of face-centered cubic (Ni) and hexagonal close-packed (Dy) structures. The structure of Ni/Dy/Ni film systems changes from amorphous to polycrystalline when Dy interlayer thickness (t Dy) is more than 15 nm. The value of magnetoresistance increases with the adding the Dy interlayer in both longitudinal and transverse geometries, meanwhile the anisotropic character of magnetoresistance field dependences retained. The saturation and reversal magnetizations are reduced with the increasing of the Dy thickness interlayer, while the coercivity takes the minimum value at t Dy = 15 nm. The following increasing of t Dy leads to increasing of coercivity near to three times. This result indicates the influence of the crystal structure on the magnetic properties of Ni thin films at adding Dy interlayer.

  15. The anisotropic tunneling behavior of spin transport in graphene-based magnetic tunneling junction

    Science.gov (United States)

    Pan, Mengchun; Li, Peisen; Qiu, Weicheng; Zhao, Jianqiang; Peng, Junping; Hu, Jiafei; Hu, Jinghua; Tian, Wugang; Hu, Yueguo; Chen, Dixiang; Wu, Xuezhong; Xu, Zhongjie; Yuan, Xuefeng

    2018-05-01

    Due to the theoretical prediction of large tunneling magnetoresistance (TMR), graphene-based magnetic tunneling junction (MTJ) has become an important branch of high-performance spintronics device. In this paper, the non-collinear spin filtering and transport properties of MTJ with the Ni/tri-layer graphene/Ni structure were studied in detail by utilizing the non-equilibrium Green's formalism combined with spin polarized density functional theory. The band structure of Ni-C bonding interface shows that Ni-C atomic hybridization facilitates the electronic structure consistency of graphene and nickel, which results in a perfect spin filtering effect for tri-layer graphene-based MTJ. Furthermore, our theoretical results show that the value of tunneling resistance changes with the relative magnetization angle of two ferromagnetic layers, displaying the anisotropic tunneling behavior of graphene-based MTJ. This originates from the resonant conduction states which are strongly adjusted by the relative magnetization angles. In addition, the perfect spin filtering effect is demonstrated by fitting the anisotropic conductance with the Julliere's model. Our work may serve as guidance for researches and applications of graphene-based spintronics device.

  16. Investigation of structure and magnetoresistance in Co/ZnO films

    International Nuclear Information System (INIS)

    Quan Zhiyong; Xu Xiaohong; Li Xiaoli; Feng, Q.; Gehring, G. A.

    2010-01-01

    Co/ZnO films were deposited on glass substrates by magnetron sputtering at room temperature. The structure of the as-deposited films is studied by means of x-ray diffraction, x-ray photoelectron spectroscopy, and the zero-field-cooled and field-cooled magnetization curves. It is shown that the as-deposited samples consist of a mixture of regions of metallic Co and semiconducting ZnO. Large negative magnetoresistance of 26% and 11.9% are observed in the as-deposited Co/ZnO film with Co concentration of 50.7 at. % at 10 K and room temperature, respectively. Structural analysis, the temperature dependence of the conductivity and magnetoresistance reveal that the magnetoresistance is induced by spin-dependent tunneling between regions of conducting magnetic Co through the ZnO semiconducting barriers. The enhanced magnetoresistance in the low temperature regime may be related to the existence of higher-order tunneling processes between large Co regions mediated by small Co particles.

  17. Hopping magnetotransport via nonzero orbital momentum states and organic magnetoresistance.

    Science.gov (United States)

    Alexandrov, Alexandre S; Dediu, Valentin A; Kabanov, Victor V

    2012-05-04

    In hopping magnetoresistance of doped insulators, an applied magnetic field shrinks the electron (hole) s-wave function of a donor or an acceptor and this reduces the overlap between hopping sites resulting in the positive magnetoresistance quadratic in a weak magnetic field, B. We extend the theory of hopping magnetoresistance to states with nonzero orbital momenta. Different from s states, a weak magnetic field expands the electron (hole) wave functions with positive magnetic quantum numbers, m>0, and shrinks the states with negative m in a wide region outside the point defect. This together with a magnetic-field dependence of injection/ionization rates results in a negative weak-field magnetoresistance, which is linear in B when the orbital degeneracy is lifted. The theory provides a possible explanation of a large low-field magnetoresistance in disordered π-conjugated organic materials.

  18. Anisotropic magnetotransport in epitaxial La2/3Ca1/3MnO3 thin films grown by dc-sputtering

    International Nuclear Information System (INIS)

    Moran, O.; Saldarriaga, W.; Prieto, P.; Baca, E.

    2005-01-01

    We have conducted a comprehensive study of the in-plane/out-of-plane magnetic and magnetotransport properties on (001)-oriented La 2/3 Ca 1/3 MnO 3 films epitaxially grown on single crystal (001)-SrTiO 3 substrates by dc-sputtering at high oxygen pressure. The films grew under tensile strain imposed by the lattice mismatch with the substrate. SQUID magnetometry indicated the presence of magnetocrystalline anisotropy at temperatures below the ferromagnetic Curie temperature T C with the easy plane being the film plane. Resistance measurements in magnetic field strengths of up to 6 T, applied both normal and parallel to the film plane, evidenced a distinctive dependence of the resistivity below T C on the angle of the applied field with respect to the plane of the film. During these measurements, transport current and applied magnetic field was all along maintained perpendicular to each other. Neither low-field magnetoresistance (LFMR) nor large magnetoresistance hysteresis were observed on these samples, suggesting that the tensile strain in the first monolayers has been partially released. Additionally, by rotating the sample 360 around an axis parallel to film plane, in magnetic fields ≥2 T, a quadratic sinusoidal dependence of the magnetoresistance (MR) on the polar angle θ was observed. These results can be consistently interpreted in frame of a generalized version of the theory of anisotropic magnetoresistance in transition-metal ferromagnets. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  19. Angle dependence on the anisotropic magnetoresistance amplitude of a single-contacted Ni nanowire subjected to a thermo-mechanical strain

    Energy Technology Data Exchange (ETDEWEB)

    Melilli, G.; Madon, B.; Wegrowe, J.-E., E-mail: jean-eric.wegrowe@polytechnique.edu; Clochard, M.-C., E-mail: clochard@cea.fr

    2015-12-15

    The effects of thermoelastic and piezoelectric strain of an active track-etched β-PVDF polymer matrix on an electrodeposited single-contacted Ni nanowire (NW) are investigated at the nanoscale by measuring the change of magnetization (i.e. using the inverse magnetostriction effect). The magnetization state is measured locally by anisotropic magnetoresistance (AMR). The ferromagnetic NW plays thus the role of a mechanical probe that allows the effects of mechanical strain to be characterized and described qualitatively and quantitatively. The inverse magnetostriction was found to be responsible for a quasi-disappearance of the AMR signal for a variation of the order of ΔT ≈ 10 K. In other terms, the variation of the magnetization due to the stress compensates the effect of external magnetic field applied on the NW resistance. The induced stress field in a single Ni NW was found 1000 time higher than the bulk stress field (due to thermal expansion measured on the PVDF). This amplification could be attributed to three nanoscopic effects: (1) a stress mismatch between the Ni NW and the membrane, (2) a non-negligible role of the surface tension on Ni NW Young modulus, and (3) the possibility of non-linear stress–strain law. We investigate here the role of these different contributions using track-etched polymer membranes irradiated at various angles (α{sub irrad}) leading to, after electrodeposition, embedded Ni NWs of different orientations.

  20. Linear negative magnetoresistance in two-dimensional Lorentz gases

    Science.gov (United States)

    Schluck, J.; Hund, M.; Heckenthaler, T.; Heinzel, T.; Siboni, N. H.; Horbach, J.; Pierz, K.; Schumacher, H. W.; Kazazis, D.; Gennser, U.; Mailly, D.

    2018-03-01

    Two-dimensional Lorentz gases formed by obstacles in the shape of circles, squares, and retroreflectors are reported to show a pronounced linear negative magnetoresistance at small magnetic fields. For circular obstacles at low number densities, our results agree with the predictions of a model based on classical retroreflection. In extension to the existing theoretical models, we find that the normalized magnetoresistance slope depends on the obstacle shape and increases as the number density of the obstacles is increased. The peaks are furthermore suppressed by in-plane magnetic fields as well as by elevated temperatures. These results suggest that classical retroreflection can form a significant contribution to the magnetoresistivity of two-dimensional Lorentz gases, while contributions from weak localization cannot be excluded, in particular for large obstacle densities.

  1. Extremely Large Magnetoresistance at Low Magnetic Field by Coupling the Nonlinear Transport Effect and the Anomalous Hall Effect.

    Science.gov (United States)

    Luo, Zhaochu; Xiong, Chengyue; Zhang, Xu; Guo, Zhen-Gang; Cai, Jianwang; Zhang, Xiaozhong

    2016-04-13

    The anomalous Hall effect of a magnetic material is coupled to the nonlinear transport effect of a semiconductor material in a simple structure to achieve a large geometric magnetoresistance (MR) based on a diode-assisted mechanism. An extremely large MR (>10(4) %) at low magnetic fields (1 mT) is observed at room temperature. This MR device shows potential for use as a logic gate for the four basic Boolean logic operations. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  2. Magnetoresistance Behavior of Conducting Filaments in Resistive-Switching NiO with Different Resistance States.

    Science.gov (United States)

    Zhao, Diyang; Qiao, Shuang; Luo, Yuxiang; Chen, Aitian; Zhang, Pengfei; Zheng, Ping; Sun, Zhong; Guo, Minghua; Chiang, Fu-Kuo; Wu, Jian; Luo, Jianlin; Li, Jianqi; Kokado, Satoshi; Wang, Yayu; Zhao, Yonggang

    2017-03-29

    The resistive switching (RS) effect in various materials has attracted much attention due to its interesting physics and potential for applications. NiO is an important system and its RS effect has been generally explained by the formation/rupture of Ni-related conducting filaments. These filaments are unique since they are formed by an electroforming process, so it is interesting to explore their magnetoresistance (MR) behavior, which can also shed light on unsolved issues such as the nature of the filaments and their evolution in the RS process, and this behavior is also important for multifunctional devices. Here, we focus on MR behavior in NiO RS films with different resistance states. Rich and interesting MR behaviors have been observed, including the normal and anomalous anisotropic magnetoresistance and tunneling magnetoresistance, which provide new insights into the nature of the filaments and their evolution in the RS process. First-principles calculation reveals the essential role of oxygen migration into the filaments during the RESET process and can account for the experimental results. Our work provides a new avenue for exploration of the conducting filaments in resistive switching materials and is significant for understanding the mechanism of RS effect and multifunctional devices.

  3. Large-scale transmission-type multifunctional anisotropic coding metasurfaces in millimeter-wave frequencies

    Science.gov (United States)

    Cui, Tie Jun; Wu, Rui Yuan; Wu, Wei; Shi, Chuan Bo; Li, Yun Bo

    2017-10-01

    We propose fast and accurate designs to large-scale and low-profile transmission-type anisotropic coding metasurfaces with multiple functions in the millimeter-wave frequencies based on the antenna-array method. The numerical simulation of an anisotropic coding metasurface with the size of 30λ × 30λ by the proposed method takes only 20 min, which however cannot be realized by commercial software due to huge memory usage in personal computers. To inspect the performance of coding metasurfaces in the millimeter-wave band, the working frequency is chosen as 60 GHz. Based on the convolution operations and holographic theory, the proposed multifunctional anisotropic coding metasurface exhibits different effects excited by y-polarized and x-polarized incidences. This study extends the frequency range of coding metasurfaces, filling the gap between microwave and terahertz bands, and implying promising applications in millimeter-wave communication and imaging.

  4. Tuning giant magnetoresistance in rolled-up Co-Cu nanomembranes by strain engineering.

    Science.gov (United States)

    Müller, Christian; Bof Bufon, Carlos Cesar; Makarov, Denys; Fernandez-Outon, Luis E; Macedo, Waldemar A A; Schmidt, Oliver G; Mosca, Dante Homero

    2012-11-21

    Compact rolled-up Co-Cu nanomembranes of high quality with different numbers of windings are realized by strain engineering. A profound analysis of magnetoresistance (MR) is performed for tubes with a single winding and a varied number of Co-Cu bilayers in the stack. Rolled-up nanomembranes with up to 12 Co-Cu bilayers are successfully fabricated by tailoring the strain state of the Cr bottom layer. By carrying out an angular dependent study, we ruled out the contribution from anisotropic MR and confirm that rolled-up Co-Cu multilayers exhibit giant magnetoresistance (GMR). No significant difference of MR is found for a single wound tube compared with planar devices. In contrast, MR in tubes with multiple windings is increased at low deposition rates of the Cr bottom layer, whereas the effect is not observable at higher rates, suggesting that interface roughness plays an important role in determining the GMR effect of the rolled-up nanomembranes. Furthermore, besides a linear increase of the MR with the number of windings, the self-rolling of nanomembranes substantially reduces the device footprint area.

  5. Large spin-valve effect in a lateral spin-valve device based on ferromagnetic semiconductor GaMnAs

    Science.gov (United States)

    Asahara, Hirokatsu; Kanaki, Toshiki; Ohya, Shinobu; Tanaka, Masaaki

    2018-03-01

    We investigate the spin-dependent transport properties of a lateral spin-valve device based on the ferromagnetic semiconductor GaMnAs. This device is composed of a GaMnAs channel layer grown on GaAs with a narrow trench across the channel. Its current-voltage characteristics show tunneling behavior. Large magnetoresistance (MR) ratios of more than ˜10% are obtained. These values are much larger than those (˜0.1%) reported for lateral-type spin metal-oxide-semiconductor field-effect transistors. The magnetic field direction dependence of the MR curve differs from that of the anisotropic magnetoresistance of GaMnAs, which confirms that the MR signal originates from the spin-valve effect between the GaMnAs electrodes.

  6. Thickness Dependent Interlayer Magnetoresistance in Multilayer Graphene Stacks

    Directory of Open Access Journals (Sweden)

    S. C. Bodepudi

    2016-01-01

    Full Text Available Chemical Vapor Deposition grown multilayer graphene (MLG exhibits large out-of-plane magnetoresistance due to interlayer magnetoresistance (ILMR effect. It is essential to identify the factors that influence this effect in order to explore its potential in magnetic sensing and data storage applications. It has been demonstrated before that the ILMR effect is sensitive to the interlayer coupling and the orientation of the magnetic field with respect to the out-of-plane (c-axis direction. In this work, we investigate the role of MLG thickness on ILMR effect. Our results show that the magnitude of ILMR effect increases with the number of graphene layers in the MLG stack. Surprisingly, thicker devices exhibit field induced resistance switching by a factor of at least ~107. This effect persists even at room temperature and to our knowledge such large magnetoresistance values have not been reported before in the literature at comparable fields and temperatures. In addition, an oscillatory MR effect is observed at higher field values. A physical explanation of this effect is presented, which is consistent with our experimental scenario.

  7. Tunneling Negative Magnetoresistance via δ Doping in a Graphene-Based Magnetic Tunnel Junction

    International Nuclear Information System (INIS)

    Yuan Jian-Hui; Chen Ni; Mo Hua; Zhang Yan; Zhang Zhi-Hai

    2016-01-01

    We investigate the tunneling magnetoresistance via δ doping in a graphene-based magnetic tunnel junction in detail. It is found that the transmission probability and the conductance oscillates with the position and the aptitude of the δ doping. Also, both the transmission probability and the conductance at the parallel configuration are suppressed by the magnetic field more obviously than that at the antiparallel configuration, which implies a large negative magnetoresistance for this device. The results show that the negative magnetoresistance of over 300% at B = 1.0 T is observed by choosing suitable doped parameters, and the temperature plays an important role in the magnetoresistance. Thus it is possible to open a way to effectively manipulate the magnetoresistance devices, and to make a type of magnetoresistance device by controlling the structural parameter of the δ doping. (paper)

  8. Extreme magnetoresistance in magnetic rare-earth monopnictides

    Science.gov (United States)

    Ye, Linda; Suzuki, Takehito; Wicker, Christina R.; Checkelsky, Joseph G.

    2018-02-01

    The acute sensitivity of the electrical resistance of certain systems to magnetic fields known as extreme magnetoresistance (XMR) has recently been explored in a new materials context with topological semimetals. Exemplified by WTe2 and rare-earth monopnictide La(Sb,Bi), these systems tend to be nonmagnetic, nearly compensated semimetals and represent a platform for large magnetoresistance driven by intrinsic electronic structure. Here we explore electronic transport in magnetic members of the latter family of semimetals and find that XMR is strongly modulated by magnetic order. In particular, CeSb exhibits XMR in excess of 1.6 ×106% at fields of 9 T whereas the magnetoresistance itself is nonmonotonic across the various magnetic phases and shows a transition from negative magnetoresistance to XMR with fields above magnetic ordering temperature TN. The magnitude of the XMR is larger than in other rare-earth monopnictides including the nonmagnetic members and follows a nonsaturating power law to fields above 30 T. We show that the overall response can be understood as the modulation of conductivity by the Ce orbital state and for intermediate temperatures can be characterized by an effective medium model. Comparison to the orbitally quenched compound GdBi supports the correlation of XMR with the onset of magnetic ordering and compensation and highlights the unique combination of orbital inversion and type-I magnetic ordering in CeSb in determining its large response. These findings suggest a paradigm for magneto-orbital control of XMR and are relevant to the understanding of rare-earth-based correlated topological materials.

  9. Transverse thermal magnetoresistance of potassium

    International Nuclear Information System (INIS)

    Newrock, R.S.; Maxfield, B.W.

    1976-01-01

    Results are presented of extensive thermal magnetoresistance measurements on single-crystal and polycrystalline specimens of potassium having residual resistance ratios (RRR) ranging from 1100 to 5300. Measurements were made between 2 and 9 0 K for magnetic fields up to 1.8 T. The observed thermal magnetoresistance cannot be understood on the basis of either semiclassical theories or from the electrical magnetoresistance and the Wiedemann-Franz law. A number of relationships are observed between the thermal and electrical magnetoresistances, many of which are not immediately obvious when comparing direct experimental observations. The thermal magnetoresistance W(T,H) is given reasonably well by W(T,H)T = W(T,0)T + AH + BH 2 , where both A and B are temperature-dependent coefficients. Results show that A = A 0 + A 1 T 3 , while B(T) cannot be expressed as any simple power law. A 0 is dependent on the RRR, while A 1 is independent of the RRR. Two relationships are found between corresponding coefficients in the electrical and thermal magnetoresistance: (i) the Wiedmann--Franz law relates A 0 to the Kohler slope of the electrical magnetoresistance and (ii) the temperature-dependent portions of the electrical and thermal Kohler slopes are both proportional to the electron--phonon scattering contribution to the corresponding zero-field resistance. The latter provides evidence that inelastic scattering is very important in determining the temperature-dependent linear magnetoresistances. Part, but by no means all, of the quadratic thermal resistance is accounted for by lattice thermal conduction. It is concluded that at least a portion of the anomalous electrical and thermal magnetoresistances is due to intrinsic causes and not inhomogeneities or other macroscopic defects

  10. High electron mobility and large magnetoresistance in the half-Heusler semimetal LuPtBi

    KAUST Repository

    Hou, Zhipeng

    2015-12-18

    Materials with high carrier mobility showing large magnetoresistance (MR) have recently received much attention because of potential applications in future high-performance magnetoelectric devices. Here, we report on an electron-hole-compensated half-Heusler semimetal LuPtBi that exhibits an extremely high electron mobility of up to 79000cm2/Vs with a nonsaturating positive MR as large as 3200% at 2 K. Remarkably, the mobility at 300 K is found to exceed 10500cm2/Vs, which is among the highest values reported in three-dimensional bulk materials thus far. The clean Shubnikov–de Haas quantum oscillation observed at low temperatures and the first-principles calculations together indicate that the high electron mobility is due to a rather small effective carrier mass caused by the distinctive band structure of the crystal. Our findings provide a different approach for finding large, high-mobility MR materials by designing an appropriate Fermi surface topology starting from simple electron-hole-compensated semimetals.

  11. Large magnetoresistance dips and perfect spin-valley filter induced by topological phase transitions in silicene

    Science.gov (United States)

    Prarokijjak, Worasak; Soodchomshom, Bumned

    2018-04-01

    Spin-valley transport and magnetoresistance are investigated in silicene-based N/TB/N/TB/N junction where N and TB are normal silicene and topological barriers. The topological phase transitions in TB's are controlled by electric, exchange fields and circularly polarized light. As a result, we find that by applying electric and exchange fields, four groups of spin-valley currents are perfectly filtered, directly induced by topological phase transitions. Control of currents, carried by single, double and triple channels of spin-valley electrons in silicene junction, may be achievable by adjusting magnitudes of electric, exchange fields and circularly polarized light. We may identify that the key factor behind the spin-valley current filtered at the transition points may be due to zero and non-zero Chern numbers. Electrons that are allowed to transport at the transition points must obey zero-Chern number which is equivalent to zero mass and zero-Berry's curvature, while electrons with non-zero Chern number are perfectly suppressed. Very large magnetoresistance dips are found directly induced by topological phase transition points. Our study also discusses the effect of spin-valley dependent Hall conductivity at the transition points on ballistic transport and reveals the potential of silicene as a topological material for spin-valleytronics.

  12. Large Magnetoresistance at Room Temperature in Organic Molecular Tunnel Junctions with Nonmagnetic Electrodes.

    Science.gov (United States)

    Xie, Zuoti; Shi, Sha; Liu, Feilong; Smith, Darryl L; Ruden, P Paul; Frisbie, C Daniel

    2016-09-27

    We report room-temperature resistance changes of up to 30% under weak magnetic fields (0.1 T) for molecular tunnel junctions composed of oligophenylene thiol molecules, 1-2 nm in length, sandwiched between gold contacts. The magnetoresistance (MR) is independent of field orientation and the length of the molecule; it appears to be an interface effect. Theoretical analysis suggests that the source of the MR is a two-carrier (two-hole) interaction at the interface, resulting in spin coupling between the tunneling hole and a localized hole at the Au/molecule contact. Such coupling leads to significantly different singlet and triplet transmission barriers at the interface. Even weak magnetic fields impede spin relaxation processes and thus modify the ratio of holes tunneling via the singlet state versus the triplet state, which leads to the large MR. Overall, the experiments and analysis suggest significant opportunities to explore large MR effects in molecular tunnel junctions based on widely available molecules.

  13. Tunneling anisotropic magnetoresistance in multilayer-(Co/Pt)/AlO.sub.x./sub./Pt structures

    Czech Academy of Sciences Publication Activity Database

    Park, B.G.; Wunderlich, J.; Williams, D.A.; Joo, S.J.; Jung, K.Y.; Shin, K. H.; Olejník, Kamil; Shick, Alexander; Jungwirth, Tomáš

    2008-01-01

    Roč. 100, č. 8 (2008), 087204/1-087204/4 ISSN 0031-9007 R&D Projects: GA ČR GA202/05/0575; GA ČR GA202/04/1519; GA ČR GEFON/06/E002; GA MŠk LC510 EU Projects: European Commission(XE) 015728 - NANOSPIN Grant - others:UK(GB) GR/S81407/01 Institutional research plan: CEZ:AV0Z10100521; CEZ:AV0Z10100520 Keywords : tunneling magnetoresistance * metallic ferromagnets * magnetocrystalline anisotropies Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 7.180, year: 2008

  14. Enhanced magnetoresistance in the binary semimetal NbAs2 due to improved crystal quality

    Science.gov (United States)

    Yokoi, K.; Murakawa, H.; Komada, M.; Kida, T.; Hagiwara, M.; Sakai, H.; Hanasaki, N.

    2018-02-01

    We have observed an extremely large magnetoresistance exceeding 1.9 million at 1.7 K at 40 T for a single crystal of the binary semimetal NbAs2. The magnetoresistive behavior for this compound is quantitatively reproduced by a semiclassical two-carrier model in which the significant enhancement of magnetoresistance is attributed to the almost full compensation of the hole and electron densities (0.994 6 ×105cm2 /V .s ). Our results indicate that binary semimetals with higher carrier densities have a great potential for exhibiting a further divergent increase in magnetoresistance merely through an improvement in crystal quality.

  15. Rashba-Edelstein Magnetoresistance in Metallic Heterostructures.

    Science.gov (United States)

    Nakayama, Hiroyasu; Kanno, Yusuke; An, Hongyu; Tashiro, Takaharu; Haku, Satoshi; Nomura, Akiyo; Ando, Kazuya

    2016-09-09

    We report the observation of magnetoresistance originating from Rashba spin-orbit coupling (SOC) in a metallic heterostructure: the Rashba-Edelstein (RE) magnetoresistance. We show that the simultaneous action of the direct and inverse RE effects in a Bi/Ag/CoFeB trilayer couples current-induced spin accumulation to the electric resistance. The electric resistance changes with the magnetic-field angle, reminiscent of the spin Hall magnetoresistance, despite the fact that bulk SOC is not responsible for the magnetoresistance. We further found that, even when the magnetization is saturated, the resistance increases with increasing the magnetic-field strength, which is attributed to the Hanle magnetoresistance in this system.

  16. Unidirectional spin-Hall and Rashba-Edelstein magnetoresistance in topological insulator-ferromagnet layer heterostructures.

    Science.gov (United States)

    Lv, Yang; Kally, James; Zhang, Delin; Lee, Joon Sue; Jamali, Mahdi; Samarth, Nitin; Wang, Jian-Ping

    2018-01-09

    The large spin-orbit coupling in topological insulators results in helical spin-textured Dirac surface states that are attractive for topological spintronics. These states generate an efficient spin-orbit torque on proximal magnetic moments. However, memory or logic spin devices based upon such switching require a non-optimal three-terminal geometry, with two terminals for the writing current and one for reading the state of the device. An alternative two-terminal device geometry is now possible by exploiting the recent discovery of the unidirectional spin Hall magnetoresistance in heavy metal/ferromagnet bilayers and unidirectional magnetoresistance in magnetic topological insulators. Here, we report the observation of such unidirectional magnetoresistance in a technologically relevant device geometry that combines a topological insulator with a conventional ferromagnetic metal. Our devices show a figure of merit (magnetoresistance per current density per total resistance) that is more than twice as large as the highest reported values in all-metal Ta/Co bilayers.

  17. Magnetic anisotropy and anisotropic ballistic conductance of thin magnetic wires

    International Nuclear Information System (INIS)

    Sabirianov, R.

    2006-01-01

    The magnetocrystalline anisotropy of thin magnetic wires of iron and cobalt is quite different from the bulk phases. The spin moment of monatomic Fe wire may be as high as 3.4 μ B , while the orbital moment as high as 0.5 μ B . The magnetocrystalline anisotropy energy (MAE) was calculated for wires up to 0.6 nm in diameter starting from monatomic wire and adding consecutive shells for thicker wires. I observe that Fe wires exhibit the change sign with the stress applied along the wire. It means that easy axis may change from the direction along the wire to perpendicular to the wire. We find that ballistic conductance of the wire depends on the direction of the applied magnetic field, i.e. shows anisotropic ballistic magnetoresistance. This effect occurs due to the symmetry dependence of the splitting of degenerate bands in the applied field which changes the number of bands crossing the Fermi level. We find that the ballistic conductance changes with applied stress. Even for thicker wires the ballistic conductance changes by factor 2 on moderate tensile stain in our 5x4 model wire. Thus, the ballistic conductance of magnetic wires changes in the applied field due to the magnetostriction. This effect can be observed as large anisotropic BMR in the experiment

  18. Anisotropic properties of single crystals of high Tc superconductors

    International Nuclear Information System (INIS)

    Tholence, J.L.; Saint-Paul, M.; Laborde, O.; Monceau, P.; Guillot, M.; Niel, H.; Levet, J.C.; Potel, M.; Padiou, J.; Gougeon, P.

    1990-01-01

    In this article the authors make a review of some of the anisotropic properties of high T c compounds, essentially RE Ba 2 Cu 3 O 7 , Bi-SR-Ca-Cu-O and Tl-Ca-Ba-Cu-O systems. In section 2 a short description of the crystal growth is reported. Section 3 deals with the anisotropic elastic properties measured by ultrasonic techniques. In section 4 the authors discuss the anisotropy in magnetization measurements and consequently on the critical currents. Section 5 concerns the magnetoresistance measurements, and the determination of the superconducting critical magnetic field H c2 . Finally in section 6, in conclusion of result described in sections 4 and 5, the authors discuss on the pinning force and on the controversial Lorentz force for explaining the broadening of the superconducting transition under magnetic field. The authors apologize for not having quoted all the works published on these different topics, which is in fact practically impossible

  19. Magnetoresistance and magnetic ordering in praseodymium and neodymium hexaborides

    International Nuclear Information System (INIS)

    Anisimov, M. A.; Bogach, A. V.; Glushkov, V. V.; Demishev, S. V.; Samarin, N. A.; Filipov, V. B.; Shitsevalova, N. Yu.; Kuznetsov, A. V.; Sluchanko, N. E.

    2009-01-01

    The magnetoresistance Δρ/ρ of single-crystal samples of praseodymium and neodymium hexaborides (PrB 6 and NdB 6 ) has been measured at temperatures ranging from 2 to 20 K in a magnetic field of up to 80 kOe. The results obtained have revealed a crossover of the regime from a small negative magnetoresistance in the paramagnetic state to a large positive magnetoresistive effect in magnetically ordered phases of the PrB 6 and NdB 6 compounds. An analysis of the dependences Δρ(H)/ρ has made it possible to separate three contributions to the magnetoresistance for the compounds under investigation. In addition to the main negative contribution, which is quadratic in the magnetic field (-Δρ/ρ ∝ H 2 ), a linear positive contribution (Δρ/ρ ∝ H) and a nonlinear ferromagnetic contribution have been found. Upon transition to a magnetically ordered state, the linear positive component in the magnetoresistance of the PrB 6 and NdB 6 compounds becomes dominant, whereas the quadratic contribution to the negative magnetoresistance is completely suppressed in the commensurate magnetic phase of these compounds. The presence of several components in the magnetoresistance has been explained by assuming that, in the antiferromagnetic phases of PrB 6 and NdB 6 , ferromagnetic nanoregions (ferrons) are formed in the 5d band in the vicinity of the rareearth ions. The origin of the quadratic contribution to the negative magnetoresistance is interpreted in terms of the Yosida model, which takes into account scattering of conduction electrons by localized magnetic moments of rare-earth ions. Within the approach used, the local magnetic susceptibility χ loc has been estimated. It has been demonstrated that, in the temperature range T N loc for the compounds under investigation can be described with good accuracy by the Curie-Weiss dependence χ loc ∝ (T - Θ p ) -1 .

  20. Tunnelling anisotropic magnetoresistance of Fe/GaAs/Ag(001) junctions from first principles: effect of hybridized interface resonances

    Czech Academy of Sciences Publication Activity Database

    Sýkora, R.; Turek, Ilja

    2012-01-01

    Roč. 24, č. 36 (2012), 365801/1-365801/10 ISSN 0953-8984 R&D Projects: GA ČR(CZ) GAP204/11/1228 Institutional support: RVO:68081723 Keywords : tunnel junctions * magnetoresistance Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.355, year: 2012

  1. Fast Magnetoresistive Random-Access Memory

    Science.gov (United States)

    Wu, Jiin-Chuan; Stadler, Henry L.; Katti, Romney R.

    1991-01-01

    Magnetoresistive binary digital memories of proposed new type expected to feature high speed, nonvolatility, ability to withstand ionizing radiation, high density, and low power. In memory cell, magnetoresistive effect exploited more efficiently by use of ferromagnetic material to store datum and adjacent magnetoresistive material to sense datum for readout. Because relative change in sensed resistance between "zero" and "one" states greater, shorter sampling and readout access times achievable.

  2. Anomalous magnetoresistance in amorphous metals

    International Nuclear Information System (INIS)

    Kuz'menko, V.M.; Vladychkin, A.N.; Mel'nikov, V.I.; Sudovtsev, A.I.

    1984-01-01

    The magnetoresistance of amorphous Bi, Ca, V and Yb films is investigated in fields up to 4 T at low temperatures. For all metals the magnetoresistance is positive, sharply decreases with growth of temperature and depends anomalously on the magnetic field strength. For amorphous superconductors the results agree satisfactorily with the theory of anomalous magnetoresistance in which allowance is made for scattering of electrons by the superconducting fluctuations

  3. Magnetoresistance of films and strips with the diffuse surface scattering

    International Nuclear Information System (INIS)

    Aronov, A.G.

    1993-08-01

    Magnetoresistance of films in a parallel magnetic field and strips in a perpendicular field is considered. The temperature and magnetic field dependencies of magnetoconductance depend on the time evolution of the correlator of phases. This correlator has different behavior as the function of time: the ergodic behavior at small magnetic fields is changed on the nonergodic one at large magnetic fields in spite of the diffusion electron motion due to a diffuse scattering on boundaries. This leads to unusual temperature and magnetic field dependencies of magnetoresistance. The ergodic hypothesis is not applicable to mesoscopical fluctuations at such a large quasiclassical field. (author). 6 refs, 5 figs

  4. Magnetoresistive phenomena in an Fe-filled carbon nanotube/elastomer composite

    International Nuclear Information System (INIS)

    Hudziak, S; Baxendale, M; Darfeuille, A; Zhang, R; Peijs, T; Mountjoy, G; Bertoni, G

    2010-01-01

    DC magnetoresistive effects were observed in above-percolation-threshold loaded Fe-filled carbon nanotube/polyurethane-urea composite samples. A phenomenological model is derived from interpretation of resistance relaxation for a range of axial strains. The large instantaneous magnetoresistance of + 90% observed at low axial strain was a result of conduction pathway breaking caused by preferential orientation of the conducting nanotubes perpendicular to the axial current flow: a result of the magnetic torque experienced by the ferromagnetic nanotube core. At large strain the observed large instantaneous change in resistance of - 90% resulted from voltage-driven relaxation in the conducting nanotube network. At high axial strain the competition between voltage-driven relaxation and a magnetic torque gave rise to an oscillatory component of resistance relaxation.

  5. Magnetoresistive phenomena in an Fe-filled carbon nanotube/elastomer composite.

    Science.gov (United States)

    Hudziak, S; Darfeuille, A; Zhang, R; Peijs, T; Mountjoy, G; Bertoni, G; Baxendale, M

    2010-03-26

    DC magnetoresistive effects were observed in above-percolation-threshold loaded Fe-filled carbon nanotube/polyurethane-urea composite samples. A phenomenological model is derived from interpretation of resistance relaxation for a range of axial strains. The large instantaneous magnetoresistance of + 90% observed at low axial strain was a result of conduction pathway breaking caused by preferential orientation of the conducting nanotubes perpendicular to the axial current flow: a result of the magnetic torque experienced by the ferromagnetic nanotube core. At large strain the observed large instantaneous change in resistance of - 90% resulted from voltage-driven relaxation in the conducting nanotube network. At high axial strain the competition between voltage-driven relaxation and a magnetic torque gave rise to an oscillatory component of resistance relaxation.

  6. Magnetoresistance of drop-cast film of cobalt-substituted magnetite nanocrystals.

    Science.gov (United States)

    Kohiki, Shigemi; Nara, Koichiro; Mitome, Masanori; Tsuya, Daiju

    2014-10-22

    An oleic acid-coated Fe2.7Co0.3O4 nanocrystal (NC) self-assembled film was fabricated via drop casting of colloidal particles onto a three-terminal electrode/MgO substrate. The film exhibited a large coercivity (1620 Oe) and bifurcation of the zero-field-cooled and field-cooled magnetizations at 300 K. At 10 K, the film exhibited both a Coulomb blockade due to single electron charging as well as a magnetoresistance of ∼-80% due to spin-dependent electron tunneling. At 300 K, the film also showed a magnetoresistance of ∼-80% due to hopping of spin-polarized electrons. Enhanced magnetic coupling between adjacent NCs and the large coercivity resulted in a large spin-polarized current flow even at 300 K.

  7. Enhanced temperature-independent magnetoresistance below the ...

    Indian Academy of Sciences (India)

    The film exhibits a large nearly temperature-independent magnetoresistance around 99% in the temperature regime below p. The zero field-cooled (ZFC) and field-cooled (FC) magnetization data at 50 Oe shows irreversibility between the ZFC and FC close to the ferromagnetic transition temperature c = 250 K. The ZFC ...

  8. Large linear magnetoresistance and shubnikov-de hass oscillations in single crystals of YPdBi heusler topological insulators

    KAUST Repository

    Wang, Wenhong; Du, Yin; Xu, Guizhou; Zhang, Xiaoming; Liu, Enke; Liu, Zhongyuan; Shi, Youguo; Chen, Jinglan; Wu, Guangheng; Zhang, Xixiang

    2013-01-01

    We report the observation of a large linear magnetoresistance (MR) and Shubnikov-de Hass (SdH) quantum oscillations in single crystals of YPdBi Heusler topological insulators. Owning to the successfully obtained the high-quality YPdBi single crystals, large non-saturating linear MR of as high as 350% at 5K and over 120% at 300K under a moderate magnetic field of 7T is observed. In addition to the large, field-linear MR, the samples exhibit pronounced SdH quantum oscillations at low temperature. Analysis of the SdH data manifests that the high-mobility bulk electron carriers dominate the magnetotransport and are responsible for the observed large linear MR in YPdBi crystals. These findings imply that the Heusler-based topological insulators have superiorities for investigating the novel quantum transport properties and developing the potential applications.

  9. Large linear magnetoresistance and shubnikov-de hass oscillations in single crystals of YPdBi heusler topological insulators

    KAUST Repository

    Wang, Wenhong

    2013-07-12

    We report the observation of a large linear magnetoresistance (MR) and Shubnikov-de Hass (SdH) quantum oscillations in single crystals of YPdBi Heusler topological insulators. Owning to the successfully obtained the high-quality YPdBi single crystals, large non-saturating linear MR of as high as 350% at 5K and over 120% at 300K under a moderate magnetic field of 7T is observed. In addition to the large, field-linear MR, the samples exhibit pronounced SdH quantum oscillations at low temperature. Analysis of the SdH data manifests that the high-mobility bulk electron carriers dominate the magnetotransport and are responsible for the observed large linear MR in YPdBi crystals. These findings imply that the Heusler-based topological insulators have superiorities for investigating the novel quantum transport properties and developing the potential applications.

  10. Study of dependence upon the magnetic field and transport current of the magnetoresistive effect in YBCO-based bulk composites

    International Nuclear Information System (INIS)

    Balaev, D A; Prus, A G; Shaykhutdinov, K A; Gokhfeld, D M; Petrov, M I

    2007-01-01

    The magnetoresistive properties of bulk YBCO + CuO and YBCO+BaPb 0.75 Sn 0.25 O 3 composites for different orientations of external magnetic field H and macroscopic transport current j have been measured. These composites exhibit large magnetoresistance in weak magnetic fields ( 2 θ. This fact suggests that the flux flow in the intergrain boundaries is responsible for the large magnetoresistive effect observed in the composites

  11. Mutual influence between current-induced giant magnetoresistance and radiation-induced magnetoresistance oscillations in the GaAs/AlGaAs 2DES.

    Science.gov (United States)

    Samaraweera, R L; Liu, H-C; Wang, Z; Reichl, C; Wegscheider, W; Mani, R G

    2017-07-11

    Radiation-induced magnetoresistance oscillations are examined in the GaAs/AlGaAs 2D system in the regime where an observed concurrent giant magnetoresistance is systematically varied with a supplementary dc-current, I dc . The I dc tuned giant magnetoresistance is subsequently separated from the photo-excited oscillatory resistance using a multi-conduction model in order to examine the interplay between the two effects. The results show that the invoked multiconduction model describes the observed giant magnetoresistance effect even in the presence of radiation-induced magnetoresistance oscillations, the magnetoresistance oscillations do not modify the giant magnetoresistance, and the magnetoresistance oscillatory extrema, i.e., maxima and minima, disappear rather asymmetrically with increasing I dc . The results suggest the interpretation that the I dc serves to suppress scattering between states near the Fermi level in a strong magnetic field limit.

  12. Negative magnetoresistance in Dirac semimetal Cd3As2.

    Science.gov (United States)

    Li, Hui; He, Hongtao; Lu, Hai-Zhou; Zhang, Huachen; Liu, Hongchao; Ma, Rong; Fan, Zhiyong; Shen, Shun-Qing; Wang, Jiannong

    2016-01-08

    A large negative magnetoresistance (NMR) is anticipated in topological semimetals in parallel magnetic fields, demonstrating the chiral anomaly, a long-sought high-energy-physics effect, in solid-state systems. Recent experiments reveal that the Dirac semimetal Cd3As2 has the record-high mobility and positive linear magnetoresistance in perpendicular magnetic fields. However, the NMR has not yet been unveiled. Here we report the observation of NMR in Cd3As2 microribbons in parallel magnetic fields up to 66% at 50 K and visible at room temperatures. The NMR is sensitive to the angle between magnetic and electrical fields, robust against temperature and dependent on the carrier density. The large NMR results from low carrier densities in our Cd3As2 samples, ranging from 3.0 × 10(17) cm(-3) at 300 K to 2.2 × 10(16) cm(-3) below 50 K. We therefore attribute the observed NMR to the chiral anomaly. In perpendicular magnetic fields, a positive linear magnetoresistance up to 1,670% at 14 T and 2 K is also observed.

  13. Hydrogen Treatment for Superparamagnetic VO2 Nanowires with Large Room-Temperature Magnetoresistance.

    Science.gov (United States)

    Li, Zejun; Guo, Yuqiao; Hu, Zhenpeng; Su, Jihu; Zhao, Jiyin; Wu, Junchi; Wu, Jiajing; Zhao, Yingcheng; Wu, Changzheng; Xie, Yi

    2016-07-04

    One-dimensional (1D) transition metal oxide (TMO) nanostructures are actively pursued in spintronic devices owing to their nontrivial d electron magnetism and confined electron transport pathways. However, for TMOs, the realization of 1D structures with long-range magnetic order to achieve a sensitive magnetoelectric response near room temperature has been a longstanding challenge. Herein, we exploit a chemical hydric effect to regulate the spin structure of 1D V-V atomic chains in monoclinic VO2 nanowires. Hydrogen treatment introduced V(3+) (3d(2) ) ions into the 1D zigzag V-V chains, triggering the formation of ferromagnetically coupled V(3+) -V(4+) dimers to produce 1D superparamagnetic chains and achieve large room-temperature negative magnetoresistance (-23.9 %, 300 K, 0.5 T). This approach offers new opportunities to regulate the spin structure of 1D nanostructures to control the intrinsic magnetoelectric properties of spintronic materials. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  14. Colossal anisotropic resistivity and oriented magnetic domains in strained La{sub 0.325}Pr{sub 0.3}Ca{sub 0.375}MnO{sub 3} films

    Energy Technology Data Exchange (ETDEWEB)

    Jiang, Tao; Yang, Shengwei; Liu, Yukuai; Zhao, Wenbo; Feng, Lei; Li, Xiaoguang, E-mail: lixg@ustc.edu.cn [Hefei National Laboratory for Physical Sciences at Microscale, Department of Physics, University of Science and Technology of China, Hefei 230026 (China); Zhou, Haibiao; Lu, Qingyou [Hefei National Laboratory for Physical Sciences at Microscale, Department of Physics, University of Science and Technology of China, Hefei 230026 (China); High Magnetic Field Laboratory, Chinese Academy of Sciences and University of Science and Technology of China, Hefei 230031 (China); Hou, Yubin [High Magnetic Field Laboratory, Chinese Academy of Sciences and University of Science and Technology of China, Hefei 230031 (China)

    2014-05-19

    Magnetic and resistive anisotropies have been studied for the La{sub 0.325}Pr{sub 0.3}Ca{sub 0.375}MnO{sub 3} films with different thicknesses grown on low symmetric (011)-oriented (LaAlO{sub 3}){sub 0.3}(SrAl{sub 0.5}Ta{sub 0.5}O{sub 3}){sub 0.7} substrates. In the magnetic and electronic phase separation region, a colossal anisotropic resistivity (AR) of ∼10{sup 5}% and an anomalous large anisotropic magnetoresistance can be observed for 30 nm film. However, for 120 nm film, the maximum AR decreases significantly (∼2 × 10{sup 3}%) due to strain relaxation. The colossal AR is strongly associated with the oriented formation of magnetic domains, and the features of the strain effects are believed to be useful for the design of artificial materials and devices.

  15. NbSe3: Fermi surface and magnetoresistance under uniaxial stress

    International Nuclear Information System (INIS)

    Tessema, G.X.; Gamble, B.K.; Kuh, J.; Skove, M.J.; Lacerda, A.H.; Bennett, M.

    1999-01-01

    The Fermi surface of NbSe 3 below the two CDW transitions is still not very clear. Large magnetoresistance and giant quantum oscillations have been seen at low temperature below the second CDW transition. The SdH oscillations are attributed to one or several small pieces of electron or hole pockets spared by the two CDW transitions at 145 and 59 K. In a previous low field study (μ 0 H<8 T) of the transverse magnetoresistance (H in the (b,c) plane) we have shown that the extremal area of one of these pockets decreases linearly with strain, ε, vanishing at ε = 2.5%. Here we extend our study into the high magnetic field regime (pulsed 60 T) and investigate the effect of uniaxial stress on the magnetoresistance (I//H). Our high field study is consistent with the fermiology study and shows that uniaxial stress leads to the obliteration of a small closed pocket. Above 1% strain the magnetoresistance is linear with H with no sign of saturation. (orig.)

  16. Study of the temperature dependence of giant magnetoresistance in metallic granular composite

    International Nuclear Information System (INIS)

    Ju Sheng; Li, Z.-Y.

    2002-01-01

    The temperature dependence of the giant magnetoresistance of metallic granular composite is studied. It is considered that the composite contains both large magnetic grains with surface spin S' and small magnetic impurities. It is found that the decrease of surface spin S' of grain is the main cause of an almost linear decrease of giant magnetoresistance with the increase of temperature in high temperature range. The magnetic impurities, composed of several atoms, lead to an almost linear increase of the giant magnetoresistance with the decrease of temperature in low temperature range. Our calculations are in good agreement with recent experimental data for metallic nanogranular composites

  17. Magnetoresistance of Mn-decorated topological line defects in graphene

    KAUST Repository

    Obodo, Tobechukwu Joshua

    2015-01-13

    We study the spin polarized transport through Mn-decorated 8-5-5-8 topological line defects in graphene using the nonequilibrium Green\\'s function formalism. Strong preferential bonding overcomes the high mobility of transition metal atoms on graphene and results in stable structures. Despite a large distance between the magnetic centers, we find a high magnetoresistance and attribute this unexpected property to very strong induced π magnetism, in particular for full coverage of all octagonal hollow sites by Mn atoms. In contrast to the magnetoresistance of graphene nanoribbon edges, the proposed system is well controlled and therefore suitable for applications.

  18. Magnetoresistance of Mn-decorated topological line defects in graphene

    KAUST Repository

    Obodo, Tobechukwu Joshua; Kahaly, M. Upadhyay; Schwingenschlö gl, Udo

    2015-01-01

    We study the spin polarized transport through Mn-decorated 8-5-5-8 topological line defects in graphene using the nonequilibrium Green's function formalism. Strong preferential bonding overcomes the high mobility of transition metal atoms on graphene and results in stable structures. Despite a large distance between the magnetic centers, we find a high magnetoresistance and attribute this unexpected property to very strong induced π magnetism, in particular for full coverage of all octagonal hollow sites by Mn atoms. In contrast to the magnetoresistance of graphene nanoribbon edges, the proposed system is well controlled and therefore suitable for applications.

  19. Extremely large nonsaturating magnetoresistance and ultrahigh mobility due to topological surface states in the metallic Bi2Te3 topological insulator

    Science.gov (United States)

    Shrestha, K.; Chou, M.; Graf, D.; Yang, H. D.; Lorenz, B.; Chu, C. W.

    2017-05-01

    Weak antilocalization (WAL) effects in Bi2Te3 single crystals have been investigated at high and low bulk charge-carrier concentrations. At low charge-carrier density the WAL curves scale with the normal component of the magnetic field, demonstrating the dominance of topological surface states in magnetoconductivity. At high charge-carrier density the WAL curves scale with neither the applied field nor its normal component, implying a mixture of bulk and surface conduction. WAL due to topological surface states shows no dependence on the nature (electrons or holes) of the bulk charge carriers. The observations of an extremely large nonsaturating magnetoresistance and ultrahigh mobility in the samples with lower carrier density further support the presence of surface states. The physical parameters characterizing the WAL effects are calculated using the Hikami-Larkin-Nagaoka formula. At high charge-carrier concentrations, there is a greater number of conduction channels and a decrease in the phase coherence length compared to low charge-carrier concentrations. The extremely large magnetoresistance and high mobility of topological insulators have great technological value and can be exploited in magnetoelectric sensors and memory devices.

  20. Non-local magnetoresistance in YIG/Pt nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Goennenwein, Sebastian T. B., E-mail: goennenwein@wmi.badw.de; Pernpeintner, Matthias; Gross, Rudolf; Huebl, Hans [Walther-Meißner-Institut, Bayerische Akademie der Wissenschaften, Walther-Meißner-Str. 8, 85748 Garching (Germany); Nanosystems Initiative Munich (NIM), Schellingstraße 4, 80799 München (Germany); Physik-Department, Technische Universität München, James-Franck-Str. 1, 85748 Garching (Germany); Schlitz, Richard; Ganzhorn, Kathrin [Walther-Meißner-Institut, Bayerische Akademie der Wissenschaften, Walther-Meißner-Str. 8, 85748 Garching (Germany); Physik-Department, Technische Universität München, James-Franck-Str. 1, 85748 Garching (Germany); Althammer, Matthias [Walther-Meißner-Institut, Bayerische Akademie der Wissenschaften, Walther-Meißner-Str. 8, 85748 Garching (Germany)

    2015-10-26

    We study the local and non-local magnetoresistance of thin Pt strips deposited onto yttrium iron garnet. The local magnetoresistive response, inferred from the voltage drop measured along one given Pt strip upon current-biasing it, shows the characteristic magnetization orientation dependence of the spin Hall magnetoresistance. We simultaneously also record the non-local voltage appearing along a second, electrically isolated, Pt strip, separated from the current carrying one by a gap of a few 100 nm. The corresponding non-local magnetoresistance exhibits the symmetry expected for a magnon spin accumulation-driven process, confirming the results recently put forward by Cornelissen et al. [“Long-distance transport of magnon spin information in a magnetic insulator at room temperature,” Nat. Phys. (published online 14 September 2015)]. Our magnetotransport data, taken at a series of different temperatures as a function of magnetic field orientation, rotating the externally applied field in three mutually orthogonal planes, show that the mechanisms behind the spin Hall and the non-local magnetoresistance are qualitatively different. In particular, the non-local magnetoresistance vanishes at liquid Helium temperatures, while the spin Hall magnetoresistance prevails.

  1. A scanning probe microscope for magnetoresistive cantilevers utilizing a nested scanner design for large-area scans

    Directory of Open Access Journals (Sweden)

    Tobias Meier

    2015-02-01

    Full Text Available We describe an atomic force microscope (AFM for the characterization of self-sensing tunneling magnetoresistive (TMR cantilevers. Furthermore, we achieve a large scan-range with a nested scanner design of two independent piezo scanners: a small high resolution scanner with a scan range of 5 × 5 × 5 μm3 is mounted on a large-area scanner with a scan range of 800 × 800 × 35 μm3. In order to characterize TMR sensors on AFM cantilevers as deflection sensors, the AFM is equipped with a laser beam deflection setup to measure the deflection of the cantilevers independently. The instrument is based on a commercial AFM controller and capable to perform large-area scanning directly without stitching of images. Images obtained on different samples such as calibration standard, optical grating, EPROM chip, self-assembled monolayers and atomic step-edges of gold demonstrate the high stability of the nested scanner design and the performance of self-sensing TMR cantilevers.

  2. Influence of anisotropic strain relaxation on the magnetoresistance properties of epitaxial Fe3O4 (110) films

    Science.gov (United States)

    Sofin, R. G. S.; Wu, Han-Chun; Ramos, R.; Arora, S. K.; Shvets, I. V.

    2015-11-01

    We studied Fe3O4 (110) films grown epitaxially on MgO (110) substrates using oxygen plasma assisted molecular beam epitaxy. The films with thickness of 30-200 nm showed anisotropic in-plane partial strain relaxation. Magneto resistance (MR) measurements with current and magnetic field along ⟨001⟩ direction showed higher MR compared to ⟨1 ¯ 10 ⟩ direction. Maximum value of MR was measured at Verwey transition temperature for both directions. We explain the observed anisotropy in the MR on the basis of the effects of anisotropic misfit strain, and the difference between the density of antiferromagnetically coupled antiphase boundaries formed along ⟨001⟩ and ⟨1 ¯ 10 ⟩ crystallographic directions, suggesting the dependence of spin polarisation on the anisotropic strain relaxation along the said crystallographic directions.

  3. Suppression of Magnetoresistance in Thin WTe2 Flakes by Surface Oxidation.

    Science.gov (United States)

    Woods, John M; Shen, Jie; Kumaravadivel, Piranavan; Pang, Yuan; Xie, Yujun; Pan, Grace A; Li, Min; Altman, Eric I; Lu, Li; Cha, Judy J

    2017-07-12

    Recent renewed interest in layered transition metal dichalcogenides stems from the exotic electronic phases predicted and observed in the single- and few-layer limit. Realizing these electronic phases requires preserving the desired transport properties down to a monolayer, which is challenging. Surface oxides are known to impart Fermi level pinning or degrade the mobility on a number of different systems, including transition metal dichalcogenides and black phosphorus. Semimetallic WTe 2 exhibits large magnetoresistance due to electron-hole compensation; thus, Fermi level pinning in thin WTe 2 flakes could break the electron-hole balance and suppress the large magnetoresistance. We show that WTe 2 develops an ∼2 nm thick amorphous surface oxide, which shifts the Fermi level by ∼300 meV at the WTe 2 surface. We also observe a dramatic suppression of the magnetoresistance for thin flakes. However, due to the semimetallic nature of WTe 2 , the effects of Fermi level pinning are well screened and are not the dominant cause for the suppression of magnetoresistance, supported by fitting a two-band model to the transport data, which showed the electron and hole carrier densities are balanced down to ∼13 nm. However, the fitting shows a significant decrease of the mobilities of both electrons and holes. We attribute this to the disorder introduced by the amorphous surface oxide layer. Thus, the decrease of mobility is the dominant factor in the suppression of magnetoresistance for thin WTe 2 flakes. Our study highlights the critical need to investigate often unanticipated and sometimes unavoidable extrinsic surface effects on the transport properties of layered dichalcogenides and other 2D materials.

  4. Magnetoresistance peak in the mixed state of the organic superconductor κ-(BEDT-TTF)2Cu[N(CN)2]Br

    International Nuclear Information System (INIS)

    Zuo, F.

    1997-01-01

    In this letter, the authors report transport measurements with field and current parallel to the b axis (perpendicular to the conducting plane) in the organic superconductor κ-(BEDT-TTF) 2 Cu[N(CN) 2 ]Br. The isothermal magnetoresistance R(H) displays a peak effect as a function of field. The peak resistance is substantially larger than that in large fields. The results are in sharp contrast to the conventional dissipation mechanisms in the mixed state of anisotropic superconductors, as in the case of Bi 2 Sr 2 CaCu 2 O 8 . Comparison with H c2 (T) obtained from magnetic measurements shows that the peak effect in R(H) occurs in the mixed state. Analysis of the data suggests a much larger Josephson junction resistance in the mixed state than that in the normal state, indicative of a new charge transport scattering mechanism in the presence of vortices

  5. Anomalous magnetoresistance in Fibonacci multilayers.

    Energy Technology Data Exchange (ETDEWEB)

    Machado, L. D.; Bezerra, C. G.; Correa, M. A.; Chesman, C.; Pearson, J. E.; Hoffmann, A. (Materials Science Division); (Universidade Federal do Rio Grande do Norte)

    2012-01-01

    We theoretically investigated magnetoresistance curves in quasiperiodic magnetic multilayers for two different growth directions, namely, [110] and [100]. We considered identical ferromagnetic layers separated by nonmagnetic layers with two different thicknesses chosen based on the Fibonacci sequence. Using parameters for Fe/Cr multilayers, four terms were included in our description of the magnetic energy: Zeeman, cubic anisotropy, bilinear coupling, and biquadratic coupling. The minimum energy was determined by the gradient method and the equilibrium magnetization directions found were used to calculate magnetoresistance curves. By choosing spacers with a thickness such that biquadratic coupling is stronger than bilinear coupling, unusual behaviors for the magnetoresistance were observed: (i) for the [110] case, there is a different behavior for structures based on even and odd Fibonacci generations, and, more interesting, (ii) for the [100] case, we found magnetic field ranges for which the magnetoresistance increases with magnetic field.

  6. High Field Linear Magnetoresistance Sensors with Perpendicular Anisotropy L10-FePt Reference Layer

    Directory of Open Access Journals (Sweden)

    X. Liu

    2016-01-01

    Full Text Available High field linear magnetoresistance is an important feature for magnetic sensors applied in magnetic levitating train and high field positioning measurements. Here, we investigate linear magnetoresistance in Pt/FePt/ZnO/Fe/Pt multilayer magnetic sensor, where FePt and Fe ferromagnetic layers exhibit out-of-plane and in-plane magnetic anisotropy, respectively. Perpendicular anisotropy L10-FePt reference layer with large coercivity and high squareness ratio was obtained by in situ substrate heating. Linear magnetoresistance is observed in this sensor in a large range between +5 kOe and −5 kOe with the current parallel to the film plane. This L10-FePt based sensor is significant for the expansion of linear range and the simplification of preparation for future high field magnetic sensors.

  7. Effect of NiO inserted layer on spin-Hall magnetoresistance in Pt/NiO/YIG heterostructures

    International Nuclear Information System (INIS)

    Shang, T.; Zhan, Q. F.; Yang, H. L.; Zuo, Z. H.; Xie, Y. L.; Liu, L. P.; Zhang, S. L.; Zhang, Y.; Li, H. H.; Wang, B. M.; Li, Run-Wei; Wu, Y. H.; Zhang, S.

    2016-01-01

    We investigate spin-current transport with an antiferromagnetic insulator NiO thin layer by means of the spin-Hall magnetoresistance (SMR) over a wide range of temperature in Pt/NiO/Y_3Fe_5O_1_2 (Pt/NiO/YIG) heterostructures. The SMR signal is comparable to that without the NiO layer as long as the temperature is near or above the blocking temperature of the NiO, indicating that the magnetic fluctuation of the insulating NiO is essential for transmitting the spin current from the Pt to YIG layer. On the other hand, the SMR signal becomes negligibly small at low temperature, and both conventional anisotropic magnetoresistance and the anomalous Hall resistance are extremely small at any temperature, implying that the insertion of the NiO has completely suppressed the Pt magnetization induced by the YIG magnetic proximity effect (MPE). The dual roles of the thin NiO layer are, to suppress the magnetic interaction or MPE between Pt and YIG, and to maintain efficient spin current transmission at high temperature.

  8. Magnetoresistance in RCo2 spin-fluctuation systems

    International Nuclear Information System (INIS)

    Gratz, E.; Nowotny, H.; Enser, J.; Bauer, E.; Hense, K.

    2004-01-01

    The effect of the spin fluctuations on the field and temperature dependence of the magnetoresistance in ScCo 2 and LuCo 2 was studied. The experimental data where explained assuming two competing mechanisms determining the magnetoresistance of these substances. One is the 'normal magnetoresistance' caused by the influence of the Lorentz force on conduction electron trajectories. The other is due to the suppression of the spin fluctuations caused by an external magnetic field. This interplay give rise to a pronounced drop of the magnetoresistance towards the lower temperature range

  9. Unusual magnetoresistance in cubic B20 Fe0.85Co0.15Si chiral magnets

    Science.gov (United States)

    Huang, S. X.; Chen, Fei; Kang, Jian; Zang, Jiadong; Shu, G. J.; Chou, F. C.; Chien, C. L.

    2016-06-01

    The B20 chiral magnets with broken inversion symmetry and C4 rotation symmetry have attracted much attention. The broken inversion symmetry leads to the Dzyaloshinskii-Moriya that gives rise to the helical and Skyrmion states. We report the unusual magnetoresistance (MR) of B20 chiral magnet Fe0.85Co0.15Si that directly reveals the broken C4 rotation symmetry and shows the anisotropic scattering by Skyrmions with respect to the current directions. The intimacy between unusual MR and broken symmetry is well confirmed by theoretically studying an effective Hamiltonian with spin-orbit coupling. The unusual MR serves as a transport signature for the Skyrmion phase.

  10. Unusual magnetoresistance in cubic B20 Fe0.85Co0.15Si chiral magnets

    International Nuclear Information System (INIS)

    Huang, S X; Chen, Fei; Zang, Jiadong; Chien, C L; Kang, Jian; Shu, G J; Chou, F C

    2016-01-01

    The B20 chiral magnets with broken inversion symmetry and C 4 rotation symmetry have attracted much attention. The broken inversion symmetry leads to the Dzyaloshinskii–Moriya that gives rise to the helical and Skyrmion states. We report the unusual magnetoresistance (MR) of B20 chiral magnet Fe 0.85 Co 0.15 Si that directly reveals the broken C 4 rotation symmetry and shows the anisotropic scattering by Skyrmions with respect to the current directions. The intimacy between unusual MR and broken symmetry is well confirmed by theoretically studying an effective Hamiltonian with spin–orbit coupling. The unusual MR serves as a transport signature for the Skyrmion phase. (paper)

  11. Tunneling magnetoresistance dependence on the temperature in a ferromagnetic Zener diode

    Energy Technology Data Exchange (ETDEWEB)

    Comesana, E; Aldegunde, M; GarcIa-Loureiro, A, E-mail: enrique.comesana@usc.e [Departamento de Electronica e Computacion, Universidade de Santiago de Compostela, 15782 Santiago de Compostela (Spain)

    2009-11-15

    In the present work we focus on the study of the temperature dependence of the tunnelling current in a ferromagnetic Zener diode. We predict the tunneling magnetoresistance dependence on the temperature. Large doping concentrations lead to magnetic semiconductors with Curie temperature T{sub C} near or over room temperature and this will facilitate the introduction of new devices that make use of the ferromagnetism effects. According to our calculations the tunneling magnetoresistance has the form TMR {proportional_to} (T{sup n}{sub C}-T{sup n}).

  12. Strain induced ferromagnetism and large magnetoresistance of epitaxial La1.5Sr0.5CoMnO6 thin films

    Science.gov (United States)

    Krishna Murthy, J.; Jyotsna, G.; N, Nileena; Anil Kumar, P. S.

    2017-08-01

    In this study, the structural, magnetic, and magneto-transport properties of La1.5Sr0.5CoMnO6 (LSCMO) thin films deposited on a SrTiO3 (001) substrate were investigated. A normal θ/2θ x-ray diffraction, rocking curve, ϕ-scan, and reciprocal space mapping data showed that prepared LSCMO thin films are single phase and highly strained with epitaxial nature. Temperature vs. magnetization of LSCMO films exhibits strain-induced ferromagnetic ordering with TC ˜ 165 K. In contrast to the bulk samples, there was no exchange bias and canted type antiferromagnetic and spin glass behavior in films having thickness (t) ≤ 26 nm. Temperature dependent resistivity data were explained using Schnakenberg's model and the polaron hopping conduction process. The slope change in resistivity and magnetoresistance maximum (˜65%) around TC indicates the existence of a weak double exchange mechanism between the mixed valence states of transition metal ions. Suppression of spin dependent scattering with the magnetic field is attributed for the large negative magnetoresistance in LSCMO films.

  13. Phase shift of oscillatory magnetoresistance in a double-cross thin film structure of La0.3Pr0.4Ca0.3MnO3 via strain-engineered elongation of electronic domains

    Science.gov (United States)

    Alagoz, H. S.; Prasad, B.; Jeon, J.; Blamire, M. G.; Chow, K. H.; Jung, J.

    2018-02-01

    The subtle balance between the competing electronic phases in manganites due to complex interplay between spin, charge, and orbital degrees of freedom could allow one to modify the properties of electronically phase separated systems. In this paper, we show that the phase shift in the oscillatory magnetoresistance ρ (θ ) can be modified by engineering strain driven elongation of electronic domains in La0.3Pr0.4Ca0.3MnO3 (LPCMO) thin films. Strain-driven elongation of magnetic domains can produce different percolation paths and hence different anisotropic magnetoresistance responses. This tunability provides a unique control that is unattainable in conventional 3 d ferromagnetic metals and alloys.

  14. Anisotropic Flow Measurements in ALICE at the Large Hadron Collider

    NARCIS (Netherlands)

    Bilandzic, A.

    2012-01-01

    Anisotropic flow is one of the observables which is sensitive to the properties of the created hot and dense system in heavy-ion collisions. In noncentral heavy-ion collisions the initial volume of the interacting system is anisotropic in coordinate space. Due to multiple interactions this anisotropy

  15. Magnetoresistances in Ni80Fe20-ITO granular film

    International Nuclear Information System (INIS)

    Gao Chunhong; Chen Ke; Yang Yanxia; Xiong Yuanqiang; Chen Peng

    2012-01-01

    Highlights: ► Magnetoresistance (MR) in Ni 80 Fe 20 -ITO granular film are investigated. ► MR is positive at high temperature, and is negative at low temperature. ► MR results from the competition among three mechanisms. - Abstract: The magnetic properties, electrical properties and magnetoresistance are investigated in Ni 80 Fe 20 -ITO granular film with various volume fractions V NF of Ni 80 Fe 20 . The room temperature magnetization hysteresis of sample with V NF = 25% shows superparamagnetic behavior. Current-voltage curve of sample with V NF = 25% at 175 K shows typical tunneling-type behavior. The magnetoresistances of samples with low V NF are positive at high temperature, and are negative at low temperature. The temperature-dependent magnetoresistances result from the competition among ordinary magnetoresistances, the granular-typed tunneling magnetoresistance and the spin-mixing induced magnetoresistances.

  16. Nonmonotonic magnetoresistance of a two-dimensional viscous electron-hole fluid in a confined geometry

    Science.gov (United States)

    Alekseev, P. S.; Dmitriev, A. P.; Gornyi, I. V.; Kachorovskii, V. Yu.; Narozhny, B. N.; Titov, M.

    2018-02-01

    Ultrapure conductors may exhibit hydrodynamic transport where the collective motion of charge carriers resembles the flow of a viscous fluid. In a confined geometry (e.g., in ultra-high-quality nanostructures), the electronic fluid assumes a Poiseuille-type flow. Applying an external magnetic field tends to diminish viscous effects leading to large negative magnetoresistance. In two-component systems near charge neutrality, the hydrodynamic flow of charge carriers is strongly affected by the mutual friction between the two constituents. At low fields, the magnetoresistance is negative, however, at high fields the interplay between electron-hole scattering, recombination, and viscosity results in a dramatic change of the flow profile: the magnetoresistance changes its sign and eventually becomes linear in very high fields. This nonmonotonic magnetoresistance can be used as a fingerprint to detect viscous flow in two-component conducting systems.

  17. Magnetism and magnetoresistance from different origins in Co/ZnO:Al granular films

    Energy Technology Data Exchange (ETDEWEB)

    Quan, Zhiyong, E-mail: quanzy@sxnu.edu.cn; Liu, Xia; Song, Zhilin; Xu, Xiaohong, E-mail: xuxh@dns.sxnu.edu.cn

    2016-12-01

    Co/ZnO:Al granular films were made on glass substrates by sequential magnetron sputter deposition of ultrathin Co layer and ZnO:Al layer at room temperature. The as-deposited films consist of superparamagnetic Co particles dispersed in ZnO:Al (~2% Al) semiconductor matrix. Distinguished magnetoresistance effect at room temperature was obtained in the as-deposited films, which obviously reduced after annealing due to the growth of Co particles. The size of important magnetic particles was analyzed by Langevin function for hysteresis loops and magnetoresistance curves at room temperature. It was found that small magnetic particle contribute to magnetoresistance behavior and large particles dominate the room temperature magnetism in Co/ZnO:Al granular films.

  18. Huge magnetoresistance effect of highly oriented pyrolytic graphite

    International Nuclear Information System (INIS)

    Du Youwei; Wang Zhiming; Ni Gang; Xing Dingyu; Xu Qingyu

    2004-01-01

    Graphite is a quasi-two-dimensional semimetal. However, for usual graphite the magnetoresistance is not so high due to its small crystal size and no preferred orientation. Huge positive magnetoresistance up to 85300% at 4.2 K and 4950% at 300 K under 8.15 T magnetic field was found in highly oriented pyrolytic graphite. The mechanism of huge positive magnetoresistance is not only due to ordinary magnetoresistance but also due to magnetic-field-driven semimetal-insulator transition

  19. Magnetoresistance and magnetic breakdown phenomenon in amorphous magnetic alloys

    International Nuclear Information System (INIS)

    Chen Hui-yu; Gong Xiao-yu

    1988-01-01

    Transverse magnetoresistance in amorphous magnetic alloys (Fe/sub 1-//sub x/CO/sub x/) 82 Cu/sub 0.4/Si/sub 4.4/B/sub 13.2/ were measured at room temperature and in the magnetic field range 0--15 kOe. For large magnetic field, three different functional dependences of magnetoresistance on magnetic field strength have been found as follows: (1) Δrho/rho approaches saturation. (2) Δrho/rho increases proportionally to H 2 . (3) For x = 0.15, a sharp Δrho/rho peak appears at a certain magnetic field strength in spatial angular orientation of both magnetic field and electric currents. Case (3) is a magnetic breakdown phenomenon. Magnetic breakdown occurs at the gap between the spin-up and spin-down sheets of the Fermi surface. This gap is the spin-orbit gap and its magnitude is a sensitive function of magnetization. Hence the magnitude and width of the magnetoresistance peak and the magnetic field strength at the peak point are functions of angular orientation of both magnetic field and electric current

  20. Colossal Magnetoresistance Manganites and Related Prototype Devices

    OpenAIRE

    Liu, Yukuai; Yin, Yuewei; Li, Xiaoguang

    2013-01-01

    We review colossal magnetoresistance in single phase manganites, as related to the field sensitive spin charge interactions and phase separation; the rectifying property and negative/positive magnetoresistance in manganite/Nb:SrTiO3 pn junctions in relation to the special interface electronic structure; magnetoelectric coupling in manganite/ferroelectric structures that takes advantage of strain, carrier density, and magnetic field sensitivity; tunneling magnetoresistance in tunnel junctions ...

  1. Magnetoresistance through spin-polarized p states

    International Nuclear Information System (INIS)

    Papanikolaou, Nikos

    2003-01-01

    We present a theoretical study of the ballistic magnetoresistance in Ni contacts using first-principles, atomistic, electronic structure calculations. In particular we investigate the role of defects in the contact region with the aim of explaining the recently observed spectacular magnetoresistance ratio. Our results predict that the possible presence of spin-polarized oxygen in the contact region could explain conductance changes by an order of magnitude. Electronic transport essentially occurs through spin-polarized oxygen p states, and this mechanism gives a much higher magnetoresistance than that obtained assuming clean atomically sharp domain walls alone

  2. Theory of magnetoresistance of organic molecular tunnel junctions with nonmagnetic electrodes

    Science.gov (United States)

    Shi, Sha; Xie, Zuoti; Liu, Feilong; Smith, Darryl L.; Frisbie, C. Daniel; Ruden, P. Paul

    2017-04-01

    Large room-temperature magnetoresistance observed for devices composed of self-assembled monolayers of different oligophenylene thiols sandwiched between gold contacts has recently been reported [Z. Xie, S. Shi, F. Liu, D. L. Smith, P. P. Ruden, and C. D. Frisbie, ACS Nano 10, 8571 (2016), 10.1021/acsnano.6b03853]. The transport mechanism through the organic molecules was determined to be nonresonant tunneling. To explain this kind of magnetoresistance, we develop an analytical model based on the interaction of the tunneling charge carrier with an unpaired charge carrier populating a contact-molecule interface state. The Coulomb interaction between carriers causes the transmission coefficients to depend on their relative spin orientation. Singlet and triplet pairing of the tunneling and the interface carriers thus correspond to separate conduction channels with different transmission probabilities. Spin relaxation enabling transitions between the different channels, and therefore tending to maximize the tunneling current for a given applied bias, can be suppressed by relatively small magnetic fields, leading to large magnetoresistance. Our model elucidates how the Coulomb interaction gives rise to transmission probabilities that depend on spin and how an applied magnetic field can inhibit transitions between different spin configurations.

  3. Superconducting magnetoresistance in ferromagnet/superconductor/ferromagnet trilayers.

    Science.gov (United States)

    Stamopoulos, D; Aristomenopoulou, E

    2015-08-26

    Magnetoresistance is a multifaceted effect reflecting the diverse transport mechanisms exhibited by different kinds of plain materials and hybrid nanostructures; among other, giant, colossal, and extraordinary magnetoresistance versions exist, with the notation indicative of the intensity. Here we report on the superconducting magnetoresistance observed in ferromagnet/superconductor/ferromagnet trilayers, namely Co/Nb/Co trilayers, subjected to a parallel external magnetic field equal to the coercive field. By manipulating the transverse stray dipolar fields that originate from the out-of-plane magnetic domains of the outer layers that develop at coercivity, we can suppress the supercurrent of the interlayer. We experimentally demonstrate a scaling of the magnetoresistance magnitude that we reproduce with a closed-form phenomenological formula that incorporates relevant macroscopic parameters and microscopic length scales of the superconducting and ferromagnetic structural units. The generic approach introduced here can be used to design novel cryogenic devices that completely switch the supercurrent 'on' and 'off', thus exhibiting the ultimate magnetoresistance magnitude 100% on a regular basis.

  4. Colossal magnetoresistance manganites

    Indian Academy of Sciences (India)

    Keywords. Manganites; colossal magnetoresistance; strongly correlated electron systems; metal-insulator transitions and other electronic transitions; Jahn-Teller polarons and electron-phonon interaction.

  5. Coulomb blockade anisotropic magnetoresistance and voltage controlled magnetic switching in a ferromagnetic GaMnAs single electron transistor

    Czech Academy of Sciences Publication Activity Database

    Wunderlich, J.; Jungwirth, Tomáš; Irvine, A.C.; Kaestner, B.; Shick, Alexander; Campion, R. P.; Williams, D.A.; Gallagher, B. L.

    2007-01-01

    Roč. 310, - (2007), s. 1883-1888 ISSN 0304-8853 R&D Projects: GA ČR GA202/05/0575; GA MŠk LC510; GA ČR GEFON/06/E002 EU Projects: European Commission(XE) 015728 - NANOSPIN Institutional research plan: CEZ:AV0Z10100521; CEZ:AV0Z10100520 Keywords : ferromagnetic semiconductors * magnetoresistance * single-electron transistor Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.704, year: 2007

  6. Large nonsaturating magnetoresistance and signature of nondegenerate Dirac nodes in ZrSiS.

    Science.gov (United States)

    Singha, Ratnadwip; Pariari, Arnab Kumar; Satpati, Biswarup; Mandal, Prabhat

    2017-03-07

    Whereas the discovery of Dirac- and Weyl-type excitations in electronic systems is a major breakthrough in recent condensed matter physics, finding appropriate materials for fundamental physics and technological applications is an experimental challenge. In all of the reported materials, linear dispersion survives only up to a few hundred millielectronvolts from the Dirac or Weyl nodes. On the other hand, real materials are subject to uncontrolled doping during preparation and thermal effect near room temperature can hinder the rich physics. In ZrSiS, angle-resolved photoemission spectroscopy measurements have shown an unusually robust linear dispersion (up to [Formula: see text]2 eV) with multiple nondegenerate Dirac nodes. In this context, we present the magnetotransport study on ZrSiS crystal, which represents a large family of materials ( WHM with W = Zr, Hf; H = Si, Ge, Sn; M = O, S, Se, Te) with identical band topology. Along with extremely large and nonsaturating magnetoresistance (MR), [Formula: see text]1.4 [Formula: see text] 10 5 % at 2 K and 9 T, it shows strong anisotropy, depending on the direction of the magnetic field. Quantum oscillation and Hall effect measurements have revealed large hole and small electron Fermi pockets. A nontrivial [Formula: see text] Berry phase confirms the Dirac fermionic nature for both types of charge carriers. The long-sought relativistic phenomenon of massless Dirac fermions, known as the Adler-Bell-Jackiw chiral anomaly, has also been observed.

  7. Tunneling magnetoresistance in Si nanowires

    KAUST Repository

    Montes Muñoz, Enrique

    2016-11-09

    We investigate the tunneling magnetoresistance of small diameter semiconducting Si nanowires attached to ferromagnetic Fe electrodes, using first principles density functional theory combined with the non-equilibrium Green\\'s functions method for quantum transport. Silicon nanowires represent an interesting platform for spin devices. They are compatible with mature silicon technology and their intrinsic electronic properties can be controlled by modifying the diameter and length. Here we systematically study the spin transport properties for neutral nanowires and both n and p doping conditions. We find a substantial low bias magnetoresistance for the neutral case, which halves for an applied voltage of about 0.35 V and persists up to 1 V. Doping in general decreases the magnetoresistance, as soon as the conductance is no longer dominated by tunneling.

  8. Giant magnetoresistance in CrFeMn alloys

    International Nuclear Information System (INIS)

    Xu, W.M.; Zheng, P.; Chen, Z.J.

    1997-01-01

    The electrical resistance and longitudinal magnetoresistance of Cr 75 (Fe x Mn 1-x ) 25 alloys, x=0.64, 0.72, are studied in the temperature range 1.5-270 K in applied field up to 7.5 T. The magnetoresistance is negative and strongly correlated with the spin reorientation. In the temperature range where the antiferromagnetic and ferromagnetic domains coexist, the samples display giant magnetoresistance which follows a H n -law at high field. (orig.)

  9. Determination of magnetic properties of multilayer metallic thin films

    International Nuclear Information System (INIS)

    Birlikseven, C.

    2000-01-01

    In recent year, Giant Magnetoresistance Effect has been attracting an increasingly high interest. High sensitivity magnetic field detectors and high sensitivity read heads of magnetic media can be named as important applications of these films. In this work, magnetic and electrical properties of single layer and thin films were investigated. Multilayer thin films were supplied by Prof. Dr. A. Riza Koeymen from Texas University. Multilayer magnetic thin films are used especially for magnetic reading and magnetic writing. storing of large amount of information into small areas become possible with this technology. Single layer films were prepared using the electron beam evaporation technique. For the exact determination of film thicknesses, a careful calibration of the thicknesses was made. Magnetic properties of the multilayer films were studied using the magnetization, magnetoresistance measurements and ferromagnetic resonance technique. Besides, by fitting the experimental results to the theoretical models, effective magnetization and angles between the ferromagnetic layers were calculated. The correspondence between magnetization and magnetoresistance was evaluated. To see the effect of anisotropic magnetoresistance in the magnetoresistance measurements, a new experimental set-up was build and measurements were taken in this set-up. A series of soft permalloy thin films were made, and temperature dependent resistivity, magnetoresistance, anisotropic magnetoresistance and magnetization measurements were taken

  10. Spring-like motion caused large anisotropic thermal expansion in nonporous M(eim)2 (M = Zn, Cd).

    Science.gov (United States)

    Liu, Zhanning; Liu, Chenxi; Li, Qiang; Chen, Jun; Xing, Xianran

    2017-09-20

    Two nonporous coordination polymers were found to possess large anisotropic thermal expansion, which was derived from the flexible structures. A "spring-like" thermal motion was proposed to illustrate the mechanism. Compound Cd(eim) 2 (eim = 2-ethylimidazole) possesses large linear and reversible thermal expansion properties and the emission intensity shows a linear decrease with temperature, making it a candidate for thermo-responsive materials.

  11. Coexistence of large positive and negative magnetoresistance in La0.7Ca0.3MnO3 films with microcracks

    International Nuclear Information System (INIS)

    Zhu Shaojiang; Zhang Fuchang; Yuan Jie; Zhu Beiyi; Xu Bo; Cao Lixin; Qiu Xianggang; Zhao Bairu

    2007-01-01

    The coexistence of large positive and negative low-field magnetoresistance (LFMR) in the ferromagnetic La 0.7 Ca 0.3 MnO 3 thin films with ordered microcrack (MC) distributions is reported. For the films with the highest linear density of MC, the negative LFMR can be up to -60% and rapidly changes to the positive value of 25% at 200 Oe field with the increase of temperature. We discuss the effect based on the spin-polarized tunneling and inhomogeneous magnetic state induced by the natural formations of MC in the films

  12. Artifacts that mimic ballistic magnetoresistance

    International Nuclear Information System (INIS)

    Egelhoff, W.F. . E-mail : egelhoff@nist.gov; Gan, L.; Ettedgui, H.; Kadmon, Y.; Powell, C.J.; Chen, P.J.; Shapiro, A.J.; McMichael, R.D.; Mallett, J.J.; Moffat, T.P.; Stiles, M.D.; Svedberg, E.B.

    2005-01-01

    We have investigated the circumstances underlying recent reports of very large values of ballistic magnetoresistance (BMR) in nanocontacts between magnetic wires. We find that the geometries used are subject to artifacts due to motion of the wires that distort the nanocontact thereby changing its electrical resistance. Since these nanocontacts are often of atomic scale, reliable experiments would require stability on the atomic scale. No method for achieving such stability in macroscopic wires is apparent. We conclude that macroscopic magnetic wires cannot be used to establish the validity of the BMR effect

  13. Magnetic and magnetoresistance studies of nanometric electrodeposited Co films and Co/Cu layered structures: Influence of magnetic layer thickness

    Energy Technology Data Exchange (ETDEWEB)

    Zsurzsa, S., E-mail: zsurzsa.sandor@wigner.mta.hu; Péter, L.; Kiss, L.F.; Bakonyi, I.

    2017-01-01

    The magnetic properties and the magnetoresistance behavior were investigated for electrodeposited nanoscale Co films, Co/Cu/Co sandwiches and Co/Cu multilayers with individual Co layer thicknesses ranging from 1 nm to 20 nm. The measured saturation magnetization values confirmed that the nominal and actual layer thicknesses are in fairly good agreement. All three types of layered structure exhibited anisotropic magnetoresistance for thick magnetic layers whereas the Co/Cu/Co sandwiches and Co/Cu multilayers with thinner magnetic layers exhibited giant magnetoresistance (GMR), the GMR magnitude being the largest for the thinnest Co layers. The decreasing values of the relative remanence and the coercive field when reducing the Co layer thickness down to below about 3 nm indicated the presence of superparamagnetic (SPM) regions in the magnetic layers which could be more firmly evidenced for these samples by a decomposition of the magnetoresistance vs. field curves into a ferromagnetic and an SPM contribution. For thicker magnetic layers, the dependence of the coercivity (H{sub c}) on magnetic layer thickness (d) could be described for each of the layered structure types by the usual equation H{sub c}=H{sub co}+a/d{sup n} with an exponent around n=1. The common value of n suggests a similar mechanism for the magnetization reversal by domain wall motion in all three structure types and hints also at the absence of coupling between magnetic layers in the Co/Cu/Co sandwiches and Co/Cu multilayers. - Highlights: • Electrodeposited nanoscale Co films and Co/Cu layered structures. • Co layer thickness (d) dependence of coercivity (H{sub c}) and magnetoresistance. • H{sub c} depends on Co layer thickness according to H{sub c}=H{sub co}+a/d{sup n} with n around 1. • The common n value suggests a similar mechanism of magnetization reversal. • The common n value suggests the absence of coupling between magnetic layers.

  14. Large area synthesis, characterization, and anisotropic etching of two dimensional tungsten disulfide films

    International Nuclear Information System (INIS)

    Mutlu, Zafer; Ozkan, Mihrimah; Ozkan, Cengiz S.

    2016-01-01

    Emergent properties of tungsten disulfide at the quantum confinement limit hold promise for electronic and optoelectronic applications. Here we report on the large area synthesis of atomically thin tungsten disulfide films with strong photoluminescence properties via sulfurization of the pre-deposited tungsten films. Detailed characterization of the pre-deposited tungsten films and tungsten disulfide films are performed using microscopy and spectroscopy methods. By directly heating tungsten disulfide films in air, we have shown that the films tend to be etched into a series of triangular shaped pits with the same orientations, revealing the anisotropic etching behavior of tungsten disulfide edges. Moreover, the dimensions of the triangular pits increase with the number of layers, suggesting a thickness dependent behavior of etching in tungsten disulfide films. This method offers a promising new avenue for engineering the edge structures of tungsten disulfide films. - Highlights: • Large-scale synthesis of WS_2 films is achieved via sulfurization of W films. • Annealing of W films leads to a substantial improvement in the quality of WS_2 films. • WS_2 films show laser power dependent photoluminescence characteristics. • WS_2 films are etched with well-oriented triangular pits upon annealing in air. • Anisotropic oxidative etching is greatly affected by the thickness of WS_2 films.

  15. A novel approach for simultaneous measurements of Hall effect and magnetoresistance effect in solid and liquid state of gallium and mercury metals

    International Nuclear Information System (INIS)

    Ogita, M.; Nakao, M.; Singh, C.D.; Mogi, I.; Awaji, S.

    2004-01-01

    An AC-DC method has been proposed for simultaneous measurements of Hall effect and magnetoresistance effect in solid and liquid state of Ga and Hg metals. In low magnetic field Hall signal in solid state is proportional to magnetic field B, while in liquid state Hall signal is affected by magnetoresistance effect. It has been found that magnetoresistance has a B 2 dependence on magnetic field and affects the Hall signal. In high magnetic field, the Hall effect in liquid state is affected by a very large magnetoresistance effect compared in solid state. The magnetoresistance effect in liquid state is higher than solid state

  16. Negative magnetoresistance without well-defined chirality in the Weyl semimetal TaP.

    Science.gov (United States)

    Arnold, Frank; Shekhar, Chandra; Wu, Shu-Chun; Sun, Yan; Dos Reis, Ricardo Donizeth; Kumar, Nitesh; Naumann, Marcel; Ajeesh, Mukkattu O; Schmidt, Marcus; Grushin, Adolfo G; Bardarson, Jens H; Baenitz, Michael; Sokolov, Dmitry; Borrmann, Horst; Nicklas, Michael; Felser, Claudia; Hassinger, Elena; Yan, Binghai

    2016-05-17

    Weyl semimetals (WSMs) are topological quantum states wherein the electronic bands disperse linearly around pairs of nodes with fixed chirality, the Weyl points. In WSMs, nonorthogonal electric and magnetic fields induce an exotic phenomenon known as the chiral anomaly, resulting in an unconventional negative longitudinal magnetoresistance, the chiral-magnetic effect. However, it remains an open question to which extent this effect survives when chirality is not well-defined. Here, we establish the detailed Fermi-surface topology of the recently identified WSM TaP via combined angle-resolved quantum-oscillation spectra and band-structure calculations. The Fermi surface forms banana-shaped electron and hole pockets surrounding pairs of Weyl points. Although this means that chirality is ill-defined in TaP, we observe a large negative longitudinal magnetoresistance. We show that the magnetoresistance can be affected by a magnetic field-induced inhomogeneous current distribution inside the sample.

  17. Large low-field magnetoresistance of Fe3O4 nanocrystal at room temperature

    International Nuclear Information System (INIS)

    Mi, Shu; Liu, Rui; Li, Yuanyuan; Xie, Yong; Chen, Ziyu

    2017-01-01

    Superparamagnetic magnetite (Fe 3 O 4 ) nanoparticles with an average size of 6.5 nm and good monodispersion were synthesized and investigated by X-ray diffraction, Raman spectrometer, transmission electron microscopy and vibrating sample magnetometer. Corresponding low-field magnetoresistance (LFMR) was tested by physical property measurement system. A quite high LFMR has been observed at room temperature. For examples, at a field of 3000 Oe, the LFMR is −3.5%, and when the field increases to 6000 Oe, the LFMR is up to −5.1%. The electron spin polarization was estimated at 25%. This result is superior to the previous reports showing the LFMR of no more than 2% at room temperature. The conduction mechanism is proposed to be the tunneling of conduction electrons between adjacent grains considering that the monodisperse nanocrystals may supply more grain boundaries increasing the tunneling probability, and consequently enhancing the overall magnetoresistance. - Highlights: • Superparamagnetic Fe3O4 nanoparticles with small size were synthesized. • A quite high LFMR has been observed at room temperature. • The more grain boundaries increase the tunneling probability and enlarge the MR. • The fast response of the sample increase the MR at a low field.

  18. Magnetoresistance in terbium and holmium single crystals

    International Nuclear Information System (INIS)

    Singh, R.L.; Jericho, M.H.; Geldart, D.J.W.

    1976-01-01

    The longitudinal magnetoresistance of single crystals of terbium and holmium metals in their low-temperature ferromagnetic phase has been investigated in magnetic fields up to 80 kOe. Typical magnetoresistance isotherms exhibit a minimum which increases in depth and moves to higher fields as the temperature increases. The magnetoresistance around 1 0 K, where inelastic scattering is negligible, has been interpreted as the sum of a negative contribution due to changes in the domain structure and a positive contribution due to normal magnetoresistance. At higher temperatures, a phenomenological approach has been developed to extract the inelastic phonon and spin-wave components from the total measured magnetoresistance. In the temperature range 4--20 0 K (approximately), the phonon resistivity varies as T 3 . 7 for all samples. Approximate upper and lower bounds have been placed on the spin-wave resistivity which is also found to be described by a simple power law in this temperature range. The implications of this result for theoretical treatments of spin-wave resistivity due to s-f exchange interactions are considered. It is concluded that the role played by the magnon energy gap is far less transparent than previously suggested

  19. The effect of magnetic ordering on the giant magnetoresistance of Cr-Fe-V and Cr-Fe-Mn

    International Nuclear Information System (INIS)

    Somsen, Ch.; Acet, M.; Nepecks, G.; Wassermann, E.F.

    2000-01-01

    Cr-rich Cr 1-x Fe x alloys with compositions in the vicinity of mixed ferromagnetic and antiferromagnetic exchange (x=0.18) exhibit giant magnetoresistance. In order to understand the influence of the antiferromagnetism of Cr on the giant magnetoresistance one can manipulate the antiferromagnetic exchange either by adding vanadium, which destroys the antiferromagnetism of Cr, or by adding manganese, which enhances it. Cr-Fe-V and Cr-Fe-Mn alloys also have Curie temperatures that lie between low temperatures and room temperature in the concentration region where giant magnetoresistance is observed. Therefore, they are also used as samples to study the magnetoresistance as a function of the strength of FM exchange. We discuss these points in the light of temperature and concentration-dependent magnetoresistance experiments on Cr 0.99-x Fe x V 0.01 , Cr 0.96-x Fe x V 0.04 , Cr 0.90-x Fe x Mn 0.10 and Cr 0.55 Fe x Mn 0.45-x alloys. Results indicate that the most favorable condition for a large magnetoresistance in these alloys occurs at temperatures near the Curie temperature

  20. Magnetoresistance anomaly in DyFeCo thin films

    International Nuclear Information System (INIS)

    Wu, J. C.; Wu, C. S.; Wu, Te-ho; Chen, Bing-Mau; Shieh, Han-Ping D.

    2001-01-01

    Microstructured rare-earth - transition-metal DyFeCo films have been investigated using magnetoresistance and extraordinary Hall-effect measurements. The Hall loops reveal variation of coercive fields depending on the linewidth and the composition of the films. The magnetoresistance curves, with changes up to as high as 1.3%, show positive/negative magnetoresistance peaks centered on the coercive fields depending on the linewidth of the films only. The variation of the coercivity can be attributed to the magnetic moment canting between the Dy and FeCo subcomponents and the existence of the diverged magnetization on the edges, and the anomalous magnetoresistance peaks observed are discussed with the existing theories. [copyright] 2001 American Institute of Physics

  1. Spin-flip induced magnetoresistance in positionally disordered organic solids.

    Science.gov (United States)

    Harmon, N J; Flatté, M E

    2012-05-04

    A model for magnetoresistance in positionally disordered organic materials is presented and solved using percolation theory. The model describes the effects of spin dynamics on hopping transport by considering changes in the effective density of hopping sites, a key quantity determining the properties of percolative transport. Faster spin-flip transitions open up "spin-blocked" pathways to become viable conduction channels and hence produce magnetoresistance. Features of this percolative magnetoresistance can be found analytically in several regimes, and agree with previous measurements, including the sensitive dependence of the magnetic-field dependence of the magnetoresistance on the ratio of the carrier hopping time to the hyperfine-induced carrier spin precession time. Studies of magnetoresistance in known systems with controllable positional disorder would provide an additional stringent test of this theory.

  2. Magnetoresistive multilayers deposited on the AAO membranes

    International Nuclear Information System (INIS)

    Malkinski, Leszek M.; Chalastaras, Athanasios; Vovk, Andriy; Jung, Jin-Seung; Kim, Eun-Mee; Jun, Jong-Ho; Ventrice, Carl A.

    2005-01-01

    Silicon and GaAs wafers are the most commonly used substrates for deposition of giant magnetoresistive (GMR) multilayers. We explored a new type of a substrate, prepared electrochemically by anodization of aluminum sheets, for deposition of GMR multilayers. The surface of this AAO substrate consists of nanosized hemispheres organized in a regular hexagonal array. The current applied along the substrate surface intersects many magnetic layers in the multilayered structure, which results in enhancement of giant magnetoresistance effect. The GMR effect in uncoupled Co/Cu multilayers was significantly larger than the magnetoresistance of similar structures deposited on Si

  3. Semiclassical theory of magnetoresistance in positionally disordered organic semiconductors

    Science.gov (United States)

    Harmon, N. J.; Flatté, M. E.

    2012-02-01

    A recently introduced percolative theory of unipolar organic magnetoresistance is generalized by treating the hyperfine interaction semiclassically for an arbitrary hopping rate. Compact analytic results for the magnetoresistance are achievable when carrier hopping occurs much more frequently than the hyperfine field precession period. In other regimes the magnetoresistance can be straightforwardly evaluated numerically. Slow and fast hopping magnetoresistance are found to be uniquely characterized by their line shapes. We find that the threshold hopping distance is analogous a phenomenological two-site model's branching parameter, and that the distinction between slow and fast hopping is contingent on the threshold hopping distance.

  4. Experimental Discovery of Magnetoresistance and Its Memory Effect in Methylimidazolium-Type Iron-Containing Ionic Liquids

    KAUST Repository

    Zhang, Haitao

    2016-11-29

    The ordering and interactions of charge carriers play a critical role in many physicochemical properties. It is, therefore, interesting to study how a magnetic field affects these physicochemical processes and the consequent behavior of the charge carriers. Here, we report the observation of positive magnetoresistance and its memory effect in methylimidazolium-type iron-containing ionic liquids (ILs). Both the electrical transport and magnetic properties of ILs were measured to understand the mechanism of magnetoresistance behavior and its memory effect. The magnetoresistance effect of [BMIM][FeCl] was found to increase with increasing applied currents. This observed memory effect can be ascribed to the slow order and disorder processes in these ILs due to the large viscosity caused by the interactions among ions.

  5. The magnetoresistivity of some rare-earth metals

    International Nuclear Information System (INIS)

    Webber, G.D.

    1978-10-01

    The thesis describes measurements of the low temperature transverse magnetoresistivities of single crystals of rare-earth metals in magnetic fields up to 8 Tesla. A general introduction to the rare-earths, their magnetic properties and a review of the basic theory and mechanism of magnetoresistivity is given. Details of the crystal structure, growth of single crystals and sample mounting method follow. The experimental equipment and measuring techniques are then described. The low temperature transverse magnetoresistivity of polycrystalline lanthanum and single crystal praseodymium for the temperature range 4.2 - 30K is measured. The separation of the spin-disorder and Fermi-surface orbital effect contributions are described and the theoretical and experimental spin-disorder values compared. Magnetoresistivity measurements for neodymium single crystals (4.2 - 30K) are compared with the magnetic properties determined from neutron diffraction studies. Results for gadolinium single crystals (4.2 - 200K) are compared for two different impurity levels and with previous work. (UK)

  6. Mutual influence between current-induced giant magnetoresistance and radiation-induced magnetoresistance oscillations in the GaAs/AlGaAs 2DES

    OpenAIRE

    Samaraweera, R. L.; Liu, H.-C.; Wang, Z.; Reichl, C.; Wegscheider, W.; Mani, R. G.

    2017-01-01

    Radiation-induced magnetoresistance oscillations are examined in the GaAs/AlGaAs 2D system in the regime where an observed concurrent giant magnetoresistance is systematically varied with a supplementary dc-current, I dc . The I dc tuned giant magnetoresistance is subsequently separated from the photo-excited oscillatory resistance using a multi-conduction model in order to examine the interplay between the two effects. The results show that the invoked multiconduction model describes the obs...

  7. Magnetostatics of anisotropic superconducting ellipsoid

    International Nuclear Information System (INIS)

    Saif, A.G.

    1987-09-01

    The magnetization and the magnetic field distribution inside (outside) an anisotropic type II superconducting ellipsoid, with filamentary structure, is formulated. We have shown that the magnetic field in this case is different from that of the general anisotropic one. The nucleations of the flux lines for specimens with large demagnetization factors are theoretically studied. We have shown that the nucleations of the flux lines, for specimens with large demagnetization factor, appears at a field larger than that of ellipsoidal shape. (author). 15 refs

  8. Magnetic and transport properties of Fe nanowires encapsulated in carbon nanotubes

    International Nuclear Information System (INIS)

    Munoz-Sandoval, E.; Lopez-Urias, F.; Diaz-Ortiz, A.; Terrones, M.; Reyes-Reyes, M.; Moran-Lopez, J.L.

    2004-01-01

    The magnetization reversal and magnetoresistance of two-dimensional arrays of aligned Fe-filled carbon nanotubes have been investigated. Our results show a linear temperature dependence of the coercivity above 10 K and a relative large hysteresis for the applied field perpendicular to the nanowires axes. A continuous decrease of the magnetoresistance for both field directions is observed. We attribute this behavior to the anisotropic nature of the system

  9. Magnetoresistance in molybdenite (MoS2) crystals

    International Nuclear Information System (INIS)

    Chakraborty, B.R.; Dutta, A.K.

    1975-01-01

    The principal magnetoresistance ratios of molybdenite (MoS 2 ), the naturally occurring semiconducting crystal, have been investigated at magnetic fields ranging from 4.5 KOe and within the temperature range 300 0 K to 700 0 K. Unlike some previous observations, magnetoresistance has been found to be negative. (author)

  10. A flexible strain gauge exhibiting reversible piezoresistivity based on an anisotropic magnetorheological polymer

    International Nuclear Information System (INIS)

    Mietta, José L; Martín Negri, R; Jorge, Guillermo

    2014-01-01

    A flexible, anisotropic and portable stress sensor (logarithmic reversible response between 40–350 kPa) was fabricated, in which i) the sensing material, ii) the electrical contacts and iii) the encapsulating material, were based on polydimethylsiloxane (PDMS) composites. The sensing material is a slide of an anisotropic magnetorheological elastomer (MRE), formed by dispersing silver-covered magnetite particles (Fe 3 O 4 @Ag) in PDMS and by curing in the presence of a uniform magnetic field. Thus, the MRE is a structure of electrically conducting pseudo-chains (needles) aligned in a specific direction, in which electrical conductivity increases when stress is exclusively applied in the direction of the needles. Electrical conductivity appears only between contact points that face each other at both sides of the MRE slide. An array of electrical contacts was implemented based on PDMS-silver paint metallic composites. The array was encapsulated with PDMS. Using Fe 3 O 4 superparamagnetic nanoparticles also opens up possibilities for a magnetic field sensor, due to the magnetoresistance effects. (paper)

  11. Large magnetoresistance in a directionally solidified Ni44.5Co5.1Mn37.1In13.3 magnetic shape memory alloy

    Science.gov (United States)

    Li, Zongbin; Hu, Wei; Chen, Fenghua; Zhang, Mingang; Li, Zhenzhuang; Yang, Bo; Zhao, Xiang; Zuo, Liang

    2018-04-01

    Polycrystalline Ni44.5Co5.1Mn37.1In13.3 alloy with coarse columnar-shaped grains and 〈0 0 1〉A preferred orientation was prepared by directional solidification. Due to the strong magnetostructural coupling, inverse martensitic transformation can be induced by the magnetic field, resulting in large negative magnetoresistance up to -58% under the field of 3 T. Such significant field controlled functional behaviors should be attributed to the coarse grains and strong preferred orientation in the directionally solidified alloy.

  12. Spin Hall magnetoresistance at high temperatures

    International Nuclear Information System (INIS)

    Uchida, Ken-ichi; Qiu, Zhiyong; Kikkawa, Takashi; Iguchi, Ryo; Saitoh, Eiji

    2015-01-01

    The temperature dependence of spin Hall magnetoresistance (SMR) in Pt/Y 3 Fe 5 O 12 (YIG) bilayer films has been investigated in a high temperature range from room temperature to near the Curie temperature of YIG. The experimental results show that the magnitude of the magnetoresistance ratio induced by the SMR monotonically decreases with increasing the temperature and almost disappears near the Curie temperature. We found that, near the Curie temperature, the temperature dependence of the SMR in the Pt/YIG film is steeper than that of a magnetization curve of the YIG; the critical exponent of the magnetoresistance ratio is estimated to be 0.9. This critical behavior of the SMR is attributed mainly to the temperature dependence of the spin-mixing conductance at the Pt/YIG interface

  13. Magnetoresistance effect in a both magnetically and electrically modulated nanostructure

    International Nuclear Information System (INIS)

    Lu, Mao-Wang; Yang, Guo-Jian

    2007-01-01

    We propose a magnetoresistance device in a both magnetically and electrically modulated two-dimensional electron gas, which can be realized experimentally by the deposition, on the top and bottom of a semiconductor heterostructure, of two parallel metallic ferromagnetic strips under an applied voltage. It is shown that a considerable magnetoresistance effect can be achieved in such a device due to the significant transmission difference for electrons through parallel and antiparallel magnetization configurations. It is also shown that the magnetoresistance ratio depends strongly on the applied voltage to the stripe in the device. These interesting properties may provide an alternative scheme to realize magnetoresistance effect in hybrid ferromagnetic/semiconductor nanosystems, and this system may be used as a voltage-tunable magnetoresistance device

  14. High frequency and magnetoelectrical properties of magnetoresistive memory element based on FeCoNi/TiN/FeCoNi film

    Directory of Open Access Journals (Sweden)

    Kurlyandskaya, G. V.

    2000-08-01

    Full Text Available A miniaturised memory device for information recording and readout processes have been designed on the basis of anisotropic magnetoresistive effect in Fe15Co20Ni65(160Å/ TiN(50Å/Fe15Co20Ni65(160Å three-layered film done by rf diode sputtering. Stable recording and readout processes were available for 32 rectangular element column, where each element had μm dimensions convenient to fabricate memory chip with 106 bits capacity. Rectangles of different sizes with removed corners were used in order to define the geometry of most of all stable recording and readout processes. Magnetoresistance and magnetoimpedance effects of a magnetic memory device have been comparatively analysed. We suggest that the decrease of the absolute value of the magnetoimpedance of the memory device comes from the reduction of the real part via the magnetoresistance.

    Se ha diseñado un dispositivo de memoria para la grabación y lectura de información basado en el efecto de la anisotropía magnetorresistiva de una multicapa fabricada por sputtering mediante diodo de rf. El elemento de memoria se compone de tres películas delgadas, de composición Fe15Co20Ni65(160Å/ TiN(50Å/Fe15Co20Ni65(160Å. El dispositivo permite procesos de grabación y lectura estables, y se compone de 32 elementos de memoria rectangulares por columna, donde cada elemento tiene dimensiones de μm lo que permite la fabricación de memorias integradas con capacidades del orden de 106 bits. Se han ensayado elementos de memoria rectangulares de diferentes tamaños, con las esquinas redondeadas con objeto de conseguir procesos de lectura-escritura lo más estable posible. Se han analizado comparativamente los efectos de magnetorresistencia y magnetoimpedancia de los elementos de memoria de diferentes dimensiones. Sugerimos que la disminución del valor absoluto de la magnetoimpedancia del elemento de memoria es consecuencia de la reducción de la parte real, de origen magnetorresistivo.

  15. Evolution of magnetic and transport properties in pore-modified CoAlO antidot arrays

    International Nuclear Information System (INIS)

    Ma, Y G; Lim, S L; Ong, C K

    2007-01-01

    CoAlO composite antidot arrays were fabricated on self-organized porous anodic aluminium oxide (AAO) membranes. The effects of pore size and film thickness on the magnetism and magnetotransport properties of the CoAlO films were investigated. On increasing the pore dimensions in the arrays, an anisotropic to isotropic magnetism transition was observed. The result is discussed based on the competitive contributions from the external field induced uniaxial anisotropy and the topology-induced shape anisotropy superimposed by the stray fields from the pore channels. Magnetoresistance showed corresponding variations with increasing pore sizes, as evidenced by a magnetoresistance variation from typically anisotropic to nearly isotropic behaviour. When deposited on large-pored AAO membranes, the antidot arrays showed no obvious anisotropy at different film thicknesses. It led to negligible magnetoresistive loops in the thick films of high structural continuity. The possible reasons for spin-independent electron scatterings are discussed

  16. Shubnikov - de Haas oscillations, weak antilocalization effect and large linear magnetoresistance in the putative topological superconductor LuPdBi

    Science.gov (United States)

    Pavlosiuk, Orest; Kaczorowski, Dariusz; Wiśniewski, Piotr

    2015-01-01

    We present electronic transport and magnetic properties of single crystals of semimetallic half-Heusler phase LuPdBi, having theoretically predicted band inversion requisite for nontrivial topological properties. The compound exhibits superconductivity below a critical temperature Tc = 1.8 K, with a zero-temperature upper critical field Bc2 ≈ 2.3 T. Although superconducting state is clearly reflected in the electrical resistivity and magnetic susceptibility data, no corresponding anomaly can be seen in the specific heat. Temperature dependence of the electrical resistivity suggests existence of two parallel conduction channels: metallic and semiconducting, with the latter making negligible contribution at low temperatures. The magnetoresistance is huge and clearly shows a weak antilocalization effect in small magnetic fields. Above about 1.5 T, the magnetoresistance becomes linear and does not saturate in fields up to 9 T. The linear magnetoresistance is observed up to room temperature. Below 10 K, it is accompanied by Shubnikov-de Haas oscillations. Their analysis reveals charge carriers with effective mass of 0.06 me and a Berry phase very close to π, expected for Dirac-fermion surface states, thus corroborating topological nature of the material. PMID:25778789

  17. Magnetoresistive magnetometer for space science applications

    International Nuclear Information System (INIS)

    Brown, P; Beek, T; Carr, C; O’Brien, H; Cupido, E; Oddy, T; Horbury, T S

    2012-01-01

    Measurement of the in situ dc magnetic field on space science missions is most commonly achieved using instruments based on fluxgate sensors. Fluxgates are robust, reliable and have considerable space heritage; however, their mass and volume are not optimized for deployment on nano or picosats. We describe a new magnetometer design demonstrating science measurement capability featuring significantly lower mass, volume and to a lesser extent power than a typical fluxgate. The instrument employs a sensor based on anisotropic magnetoresistance (AMR) achieving a noise floor of less than 50 pT Hz −1/2 above 1 Hz on a 5 V bridge bias. The instrument range is scalable up to ±50 000 nT and the three-axis sensor mass and volume are less than 10 g and 10 cm 3 , respectively. The ability to switch the polarization of the sensor's easy axis and apply magnetic feedback is used to build a driven first harmonic closed loop system featuring improved linearity, gain stability and compensation of the sensor offset. A number of potential geospace applications based on the initial instrument results are discussed including attitude control systems and scientific measurement of waves and structures in the terrestrial magnetosphere. A flight version of the AMR magnetometer will fly on the TRIO-CINEMA mission due to be launched in 2012. (paper)

  18. Room temperature electrically tunable rectification magnetoresistance in Ge-based Schottky devices.

    Science.gov (United States)

    Huang, Qi-Kun; Yan, Yi; Zhang, Kun; Li, Huan-Huan; Kang, Shishou; Tian, Yu-Feng

    2016-11-23

    Electrical control of magnetotransport properties is crucial for device applications in the field of spintronics. In this work, as an extension of our previous observation of rectification magnetoresistance, an innovative technique for electrical control of rectification magnetoresistance has been developed by applying direct current and alternating current simultaneously to the Ge-based Schottky devices, where the rectification magnetoresistance could be remarkably tuned in a wide range. Moreover, the interface and bulk contribution to the magnetotransport properties has been effectively separated based on the rectification magnetoresistance effect. The state-of-the-art electrical manipulation technique could be adapt to other similar heterojunctions, where fascinating rectification magnetoresistance is worthy of expectation.

  19. The effect of spin-orbit coupling on magnetoresistance in nonmagnetic organic semiconductors

    International Nuclear Information System (INIS)

    Zhao Jun-Qing; Ding Meng; Zhang Tian-You; Zhang Ning-Yu; Pang Yan-Tao; Ji Yan-Ju; Chen Ying; Wang Feng-Xiang; Fu Gang

    2012-01-01

    We investigated the effect of spin-orbit coupling on magnetoresistance in nonmagnetic organic semiconductors. A Lorentz-type magnetoresistance is obtained from spin-orbit coupling-dependent spin precession under the condition of a space-charge-limited current. The magnetoresistance depends on the initial spin orientation of the electron with respect to the hole in electron—hole pairs, and the increasing spin-orbit coupling slows down the change in magnetoresistance with magnetic field. The field dependence, the sign and the saturation value of the magnetoresistance are composite effects of recombination and dissociation rate constants of singlet and triplet electron—hole pairs. The simulated magnetoresistance shows good consistency with the experimental results. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  20. Multiple phase transitions and magnetoresistance of HoFe{sub 4}Ge{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Liu, J., E-mail: liujing@iastate.edu; Pecharsky, V.K.; Gschneidner, K.A.

    2015-05-15

    Highlights: • Three magnetic transitions at T{sub N} = 51 K, T{sub f1} = 42 K, and T{sub f2} = 15 K. • Kinetically arrested phase below a freezing point of ∼11 K. • First-order metamagnetic transition at critical field ∼22 kOe below 35 K. • A large magnetoresistance of ∼30% at a field change of 30 kOe near 15 K. - Abstract: A systematic study of the structural, magnetic, heat capacity, electrical resistivity and magnetoresistance properties of HoFe{sub 4}Ge{sub 2} has been performed. The temperature dependencies of the magnetization and heat capacity show three magnetic transitions at T{sub N} = 51 K, T{sub f1} = 42 K, and T{sub f2} = 15 K. The high temperature transition is antiferromagnetic ordering and the two low temperature phase transitions are due to rearrangements of the magnetic structure. A kinetically arrested phase is observed below a freezing point of ∼11 K. Below 35 K, the behavior of the isothermal magnetization reflects a first-order metamagnetic phase transition. Multiple phase transitions are also manifested in the electrical resistivity behavior. For a field change of 30 kOe, a large magnetoresistance of ∼30% is observed near T{sub f2} (15 K)

  1. Effect of quantum tunneling on spin Hall magnetoresistance.

    Science.gov (United States)

    Ok, Seulgi; Chen, Wei; Sigrist, Manfred; Manske, Dirk

    2017-02-22

    We present a formalism that simultaneously incorporates the effect of quantum tunneling and spin diffusion on the spin Hall magnetoresistance observed in normal metal/ferromagnetic insulator bilayers (such as Pt/Y 3 Fe 5 O 12 ) and normal metal/ferromagnetic metal bilayers (such as Pt/Co), in which the angle of magnetization influences the magnetoresistance of the normal metal. In the normal metal side the spin diffusion is known to affect the landscape of the spin accumulation caused by spin Hall effect and subsequently the magnetoresistance, while on the ferromagnet side the quantum tunneling effect is detrimental to the interface spin current which also affects the spin accumulation. The influence of generic material properties such as spin diffusion length, layer thickness, interface coupling, and insulating gap can be quantified in a unified manner, and experiments that reveal the quantum feature of the magnetoresistance are suggested.

  2. Temperature dependence of magnetoresistance in lanthanum manganite ceramics

    International Nuclear Information System (INIS)

    Gubkin, M.K.; Zalesskii, A.V.; Perekalina, T.M.

    1996-01-01

    Magnetoresistivity in the La0.9Na0.1Mn0.9(V,Co)0.1O3 and LaMnO3+δ ceramics was studied. The temperature dependence of magnetoresistance in these specimens was found to differ qualitatively from that in the La0.9Na0.1MnO3 single crystal (the magnetoresistance value remains rather high throughout the measurement range below the Curie temperature), with the maximum values being about the same (20-40% in the field of 20 kOe). Previously published data on magnetization, high frequency magnetic susceptibility, and local fields at the 139La nuclei of the specimens with similar properties attest to their magnetic inhomogeneity. The computation of the conductivity of the nonuniformly ordered lanthanum manganite was performed according to the mean field theory. The calculation results allow one to interpret qualitatively various types of experimental temperature dependences of magnetoresistance

  3. Ballistic magnetoresistance of electrodeposited nanocontacts in thin film and micrometer wire gaps

    International Nuclear Information System (INIS)

    Garcia, N.; Cheng, H.; Wang, H.; Nikolic, N.D.; Guerrero, C.A.; Papageorgopoulos, A.C.

    2004-01-01

    In this paper, we review the recent advances and progress in ballistic magnetoresistance (BMR) in magnetic nanocontacts electrodeposited in thin films and micrometer gaps. We report the influence of magnetostriction in the measurements under different configurations and substrates, as well as the contribution of the magnetic material forming the contacts. To avoid the magnetostriction effect, we have fabricated magnetic nanocontacts in Cu wires and Cu films. Similar BMR results can be observed in these systems. Our results show that the BMR effect should depend on the microproperties of the nanocontacts and should not be related with the macroproperties of the electrodes. The magnetostriction results, measured by an atomic force microscopy system with a built-in electromagnet, clearly show that there is no direct relationship between the displacement (caused by the magnetostriction effect) and the value of BMR. In fact, we present large magnetoresistance values for permalloy, coinciding with displacements in the latter's structure less than 1 nm, which is the smallest clearly observable shift allowed by our atomic force microscope. Repetitions of hundreds of R(H) curves are presented for different materials with different coercive fields. The interpretation of the results is based on the formation of an interfacial transparent layer (non-stoichiometric oxide, sulfur, etc.) at the nanocontact where the theory can explain large magnetoresistance values

  4. The magnetic ordering in high magnetoresistance Mn-doped ZnO thin films

    KAUST Repository

    Venkatesh, S.

    2016-03-24

    We studied the nature of magnetic ordering in Mn-doped ZnO thin films that exhibited ferromagnetism at 300 K and superparamagnetism at 5 K. We directly inter-related the magnetisation and magnetoresistance by invoking the polaronpercolation theory and variable range of hopping conduction below the metal-to-insulator transition. By obtaining a qualitative agreement between these two models, we attribute the ferromagnetism to the s-d exchange-induced spin splitting that was indicated by large positive magnetoresistance (∼40 %). Low temperature superparamagnetism was attributed to the localization of carriers and non-interacting polaron clusters. This analysis can assist in understanding the presence or absence of ferromagnetism in doped/un-doped ZnO.

  5. The magnetic ordering in high magnetoresistance Mn-doped ZnO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Venkatesh, S.; Baras, A.; Roqan, I. S., E-mail: Iman.roqan@kaust.edu.sa [Physical Sciences and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900 (Saudi Arabia); Lee, J.-S. [Stanford Synchrotron Radiation Lightsource, SLAC National Accelerator Laboratory, Menlo Park, California 94025 (United States)

    2016-03-15

    We studied the nature of magnetic ordering in Mn-doped ZnO thin films that exhibited ferromagnetism at 300 K and superparamagnetism at 5 K. We directly inter-related the magnetisation and magnetoresistance by invoking the polaron percolation theory and variable range of hopping conduction below the metal-to-insulator transition. By obtaining a qualitative agreement between these two models, we attribute the ferromagnetism to the s-d exchange-induced spin splitting that was indicated by large positive magnetoresistance (∼40 %). Low temperature superparamagnetism was attributed to the localization of carriers and non-interacting polaron clusters. This analysis can assist in understanding the presence or absence of ferromagnetism in doped/un-doped ZnO.

  6. Colossal magnetoresistance in manganites and related prototype devices

    International Nuclear Information System (INIS)

    Liu Yu-Kuai; Yin Yue-Wei; Li Xiao-Guang

    2013-01-01

    We review colossal magnetoresistance in single phase manganites, as related to the field sensitive spin-charge interactions and phase separation; the rectifying property and negative/positive magnetoresistance in manganite/Nb:SrTiO 3 p—n junctions in relation to the special interface electronic structure; magnetoelectric coupling in manganite/ferroelectric structures that takes advantage of strain, carrier density, and magnetic field sensitivity; tunneling magnetoresistance in tunnel junctions with dielectric, ferroelectric, and organic semiconductor spacers using the fully spin polarized nature of manganites; and the effect of particle size on magnetic properties in manganite nanoparticles. (topical review - magnetism, magnetic materials, and interdisciplinary research)

  7. Large magnetoresistance and Fermi surface study of Sb2Se2Te single crystal

    Science.gov (United States)

    Shrestha, K.; Marinova, V.; Graf, D.; Lorenz, B.; Chu, C. W.

    2017-09-01

    We have studied the magnetotransport properties of a Sb2Se2Te single crystal. Magnetoresistance (MR) is maximum when the magnetic field is perpendicular to the sample surface and reaches a value of 1100% at B = 31 T with no sign of saturation. MR shows Shubnikov de Haas (SdH) oscillations above B = 15 T. The frequency spectrum of SdH oscillations consists of three distinct peaks at α = 32 T, β = 80 T, and γ = 117 T indicating the presence of three Fermi surface pockets. Among these frequencies, β is the prominent peak in the frequency spectrum of SdH oscillations measured at different tilt angles of the sample with respect to the magnetic field. From the angle dependence β and Berry phase calculations, we have confirmed the trivial topology of the β-pocket. The cyclotron masses of charge carriers, obtained by using the Lifshitz-Kosevich formula, are found to be mβ*=0.16mo and m γ*=0.63 mo for the β and γ bands, respectively. The Large MR of Sb2Se2Te is suitable for utilization in electronic instruments such as computer hard discs, high field magnetic sensors, and memory devices.

  8. Role of spin polarized tunneling in magnetoresistance and low

    Indian Academy of Sciences (India)

    Role of spin polarized tunneling in magnetoresistance and low temperature minimum of polycrystalline La1–KMnO3 ( = 0.05, 0.1, ... Manganites; magnetoresistance; low temperature resistivity; spin polarized tunneling. ... Current Issue

  9. Probing giant magnetoresistance with THz spectroscopy

    DEFF Research Database (Denmark)

    Jin, Zuanming; Tkach, Alexander; Casper, Frederick

    2014-01-01

    We observe a giant magnetoresistance effect in CoFe/Cu-based multistack using THz time-domain spectroscopy. The magnetic field-dependent dc conductivity, electron scattering time, as well as spin-asymmetry parameter of the structure are successfully determined. © 2014 OSA.......We observe a giant magnetoresistance effect in CoFe/Cu-based multistack using THz time-domain spectroscopy. The magnetic field-dependent dc conductivity, electron scattering time, as well as spin-asymmetry parameter of the structure are successfully determined. © 2014 OSA....

  10. Big magnetoresistance: magnetic polarons

    International Nuclear Information System (INIS)

    Teresa, J.M. de; Ibarra, M.R.

    1997-01-01

    By using several macro and microscopic experimental techniques we have given evidence for magnetoresistance in manganese oxides caused by the effect of the magnetic field on the magnetic polarons. (Author) 3 refs

  11. Nanostructural origin of semiconductivity and large magnetoresistance in epitaxial NiCo2O4/Al2O3 thin films

    Science.gov (United States)

    Zhen, Congmian; Zhang, XiaoZhe; Wei, Wengang; Guo, Wenzhe; Pant, Ankit; Xu, Xiaoshan; Shen, Jian; Ma, Li; Hou, Denglu

    2018-04-01

    Despite low resistivity (~1 mΩ cm), metallic electrical transport has not been commonly observed in inverse spinel NiCo2O4, except in certain epitaxial thin films. Previous studies have stressed the effect of valence mixing and the degree of spinel inversion on the electrical conduction of NiCo2O4 films. In this work, we studied the effect of nanostructural disorder by comparing the NiCo2O4 epitaxial films grown on MgAl2O4 (1 1 1) and on Al2O3 (0 0 1) substrates. Although the optimal growth conditions are similar for the NiCo2O4 (1 1 1)/MgAl2O4 (1 1 1) and the NiCo2O4 (1 1 1)/Al2O3 (0 0 1) films, they show metallic and semiconducting electrical transport, respectively. Post-growth annealing decreases the resistivity of NiCo2O4 (1 1 1)/Al2O3 (0 0 1) films, but the annealed films are still semiconducting. While the semiconductivity and the large magnetoresistance in NiCo2O4 (1 1 1)/Al2O3 (0 0 1) films cannot be accounted for in terms of non-optimal valence mixing and spinel inversion, the presence of anti-phase boundaries between nano-sized crystallites, generated by the structural mismatch between NiCo2O4 and Al2O3, may explain all the experimental observations in this work. These results reveal nanostructural disorder as being another key factor for controlling the electrical transport of NiCo2O4, with potentially large magnetoresistance for spintronics applications.

  12. Tunnel magnetoresistance in asymmetric double-barrier magnetic tunnel junctions

    International Nuclear Information System (INIS)

    Useinov, N.Kh.; Petukhov, D.A.; Tagirov, L.R.

    2015-01-01

    The spin-polarized tunnel conductance and tunnel magnetoresistance (TMR) through a planar asymmetric double-barrier magnetic tunnel junction (DBMTJ) have been calculated using quasi-classical model. In DBMTJ nanostructure the magnetization of middle ferromagnetic metal layer can be aligned parallel or antiparallel with respect to the fixed magnetizations of the top and bottom ferromagnetic electrodes. The transmission coefficients of an electron to pass through the barriers have been calculated in terms of quantum mechanics. The dependencies of tunnel conductance and TMR on the applied voltage have been calculated in case of non-resonant transmission. Estimated in the framework of our model, the difference between the spin-channels conductances at low voltages was found relatively large. This gives rise to very high magnitude of TMR. - Highlights: • The spin-polarized conductance through the junction is calculated. • Dependencies of the tunnel conductance vs applied bias are shown. • Bias voltage dependence of tunnel magnetoresistance for the structure is shown

  13. Large anisotropy in colossal magnetoresistance of charge orbital ordered epitaxial Sm(0.5)Ca(0.5)MnO(3) films.

    Science.gov (United States)

    Chen, Y Z; Sun, J R; Zhao, J L; Wang, J; Shen, B G; Pryds, N

    2009-11-04

    We investigated the structure and magnetotransport properties of Sm(0.5)Ca(0.5)MnO(3) (SCMO) films epitaxially grown on (011)-oriented SrTiO(3) substrates, which exhibited clear charge/orbital ordering transition. A significant anisotropy of ∼1000 in the colossal magnetoresistance (CMR) effect was observed in the films with a thickness between 50 and 80 nm, which was distinctly different from the basically isotropic CMR effect in bulk SCMO. The large anisotropy in the CMR can be ascribed to the intrinsic asymmetric strain in the film, which plays an important role in tuning the spin-orbit coupling in manganite films. The origin of the peculiar CMR effect is discussed.

  14. Electrically tuned magnetic order and magnetoresistance in a topological insulator.

    Science.gov (United States)

    Zhang, Zuocheng; Feng, Xiao; Guo, Minghua; Li, Kang; Zhang, Jinsong; Ou, Yunbo; Feng, Yang; Wang, Lili; Chen, Xi; He, Ke; Ma, Xucun; Xue, Qikun; Wang, Yayu

    2014-09-15

    The interplay between topological protection and broken time reversal symmetry in topological insulators may lead to highly unconventional magnetoresistance behaviour that can find unique applications in magnetic sensing and data storage. However, the magnetoresistance of topological insulators with spontaneously broken time reversal symmetry is still poorly understood. In this work, we investigate the transport properties of a ferromagnetic topological insulator thin film fabricated into a field effect transistor device. We observe a complex evolution of gate-tuned magnetoresistance, which is positive when the Fermi level lies close to the Dirac point but becomes negative at higher energies. This trend is opposite to that expected from the Berry phase picture, but is intimately correlated with the gate-tuned magnetic order. The underlying physics is the competition between the topology-induced weak antilocalization and magnetism-induced negative magnetoresistance. The simultaneous electrical control of magnetic order and magnetoresistance facilitates future topological insulator based spintronic devices.

  15. Magnetoresistive waves in plasmas

    International Nuclear Information System (INIS)

    Felber, F.S.; Hunter, R.O. Jr.; Pereira, N.R.; Tajima, T.

    1982-01-01

    The self-generated magnetic field of a current diffusing into a plasma between conductors can magnetically insulate the plasma. Propagation of magnetoresistive waves in plasmas is analyzed. Applications to plasma opening switches are discussed

  16. Magnetoresistance in Co/2D MoS2/Co and Ni/2D MoS2/Ni junctions.

    Science.gov (United States)

    Zhang, Han; Ye, Meng; Wang, Yangyang; Quhe, Ruge; Pan, Yuanyuan; Guo, Ying; Song, Zhigang; Yang, Jinbo; Guo, Wanlin; Lu, Jing

    2016-06-28

    Semiconducting single-layer (SL) and few-layer MoS2 have a flat surface, free of dangling bonds. Using density functional theory coupled with non-equilibrium Green's function method, we investigate the spin-polarized transport properties of Co/2D MoS2/Co and Ni/2D MoS2/Ni junctions with MoS2 layer numbers of N = 1, 3, and 5. Well-defined interfaces are formed between MoS2 and metal electrodes. The junctions with a SL MoS2 spacer are almost metallic owing to the strong coupling between MoS2 and the ferromagnets, while those are tunneling with a few layer MoS2 spacer. Both large magnetoresistance and tunneling magnetoresistance are found when fcc or hcp Co is used as an electrode. Therefore, flat single- and few-layer MoS2 can serve as an effective nonmagnetic spacer in a magnetoresistance or tunneling magnetoresistance device with a well-defined interface.

  17. Fusion neutron effects on magnetoresistivity of copper stabilizer materials

    International Nuclear Information System (INIS)

    Guinan, M.W.; Van Konynenburg, R.A.

    1983-01-01

    Eight copper wires were repeatedly irradiated at 4.2 to 4.4 K with 14.8 MV neutrons and isochronally annealed at temperatures up to 34 0 C for a total of five cycles. Their electrical resistances were monitored during irradiation under zero applied magnetic field. After each irradiation the magnetoresistances were measured in applied transverse magnetic fields of up to 12 T. Then the samples were isochronally annealed to observe the recovery of the resistivity and magnetoresistivity. After each anneal at the highest temperature (34 0 C), some of the damage remained and contributed to the damage state observed following the subsequent irradiation. In this way, we were able to observe how the changes in magnetoresistance would accumulate during the repeated irradiations and anneals expected to be characteristic of fusion reactor magnets. For each succeeding irradiation the fluence was chosen to produce approximately the same final magnetoresistance at 12 T, taking account of the accumulating residual radiation damage. The increment of magnetoresistivity added by the irradiation varied from 35 to 65% at 12 T and from 50 to 90% at 8 T for the various samples

  18. Spatial mobility fluctuation induced giant linear magnetoresistance in multilayered graphene foam

    KAUST Repository

    Li, Peng

    2016-07-05

    Giant, positive, and near-temperature-independent linear magnetoresistance (LMR), as large as 340%, was observed in graphene foam with a three-dimensional flexible network. Careful analysis of the magnetoresistance revealed that Shubnikov–de Haas (SdH) oscillations occurred at low temperatures and decayed with increasing temperature. The average classical mobility ranged from 300 (2 K) to 150 (300 K) cm2V−1s−1, which is much smaller than that required by the observed SdH oscillations. To understand the mechanism behind the observation, we performed the same measurements on the microsized graphene sheets that constitute the graphene foam. Much more pronounced SdH oscillations superimposed on the LMR background were observed in these microscaled samples, which correspond to a quantum mobility as high as 26,500cm2V−1s−1. Moreover, the spatial mobility fluctuated significantly from 64,200cm2V−1s−1 to 1370cm2V−1s−1, accompanied by a variation of magnetoresistance from near 20,000% to less than 20%. The presence of SdH oscillations actually excludes the possibility that the observed LMR originated from the extreme quantum limit, because this would demand all electrons to be in the first Landau level. Instead, we ascribe the large LMR to the second case of the classical Parish and Littlewood model, in which spatial mobility fluctuation dominates electrical transport. This is an experimental confirmation of the Parish and Littlewood model by measuring the local mobility randomly (by measuring the microsized graphene sheets) and finding the spatial mobility fluctuation.

  19. Large low-field magnetoresistance of Fe{sub 3}O{sub 4} nanocrystal at room temperature

    Energy Technology Data Exchange (ETDEWEB)

    Mi, Shu, E-mail: mishu@buaa.edu.cn; Liu, Rui, E-mail: liurui1987@buaa.edu.cn; Li, Yuanyuan, E-mail: buaaliyuan@163.com; Xie, Yong, E-mail: xiey@buaa.edu.cn; Chen, Ziyu, E-mail: chenzy@buaa.edu.cn

    2017-04-15

    Superparamagnetic magnetite (Fe{sub 3}O{sub 4}) nanoparticles with an average size of 6.5 nm and good monodispersion were synthesized and investigated by X-ray diffraction, Raman spectrometer, transmission electron microscopy and vibrating sample magnetometer. Corresponding low-field magnetoresistance (LFMR) was tested by physical property measurement system. A quite high LFMR has been observed at room temperature. For examples, at a field of 3000 Oe, the LFMR is −3.5%, and when the field increases to 6000 Oe, the LFMR is up to −5.1%. The electron spin polarization was estimated at 25%. This result is superior to the previous reports showing the LFMR of no more than 2% at room temperature. The conduction mechanism is proposed to be the tunneling of conduction electrons between adjacent grains considering that the monodisperse nanocrystals may supply more grain boundaries increasing the tunneling probability, and consequently enhancing the overall magnetoresistance. - Highlights: • Superparamagnetic Fe3O4 nanoparticles with small size were synthesized. • A quite high LFMR has been observed at room temperature. • The more grain boundaries increase the tunneling probability and enlarge the MR. • The fast response of the sample increase the MR at a low field.

  20. Large negative magnetoresistance of a nearly Dirac material: Layered antimonide EuMnS b2

    Science.gov (United States)

    Yi, Changjiang; Yang, Shuai; Yang, Meng; Wang, Le; Matsushita, Yoshitaka; Miao, Shanshan; Jiao, Yuanyuan; Cheng, Jinguang; Li, Yongqing; Yamaura, Kazunari; Shi, Youguo; Luo, Jianlin

    2017-11-01

    Single crystals of EuMnS b2 were successfully grown and their structural and electronic properties were investigated systematically. The material crystallizes in an orthorhombic-layered structure (space group: Pnma, No. 62) comprising a periodic sequence of -MnSb/Eu/Sb/Eu/- layers (˜1 nm in thickness), and massless fermions are expected to emerge in the Sb layer, by analogy of the candidate Dirac materials EuMnB i2 and A Mn P n2 (A =Ca or Sr or Ba, P n =Sb or Bi). The magnetic and specific heat measurements of EuMnS b2 suggest an antiferromagnetic ordering of Eu moments near 20 K. A characteristic hump appears in the temperature-dependent electrical resistivity curve at ˜25 K . A spin-flop transition of Eu moments with an onset magnetic field of ˜15 kOe (at 2 K) was observed. Interestingly, EuMnS b2 shows a negative magnetoresistance (up to -95 % ) in contrast to the positive magnetoresistances observed for EuMnB i2 and A Mn P n2 (A =Ca or Sr or Ba, P n =Sb or Bi), providing a unique opportunity to study the correlation between electronic and magnetic properties in this class of materials.

  1. Tunnel magnetoresistance in thermally robust Mo/CoFeB/MgO tunnel junction with perpendicular magnetic anisotropy

    Directory of Open Access Journals (Sweden)

    B. Fang

    2015-06-01

    Full Text Available We report on tunnel magnetoresistance and electric-field effect in the Mo buffered and capped CoFeB/MgO magnetic tunnel junctions (MTJs with perpendicular magnetic anisotropy. A large tunnel magnetoresistance of 120% is achieved. Furthermore, this structure shows greatly improved thermal stability and stronger electric-field-induced modulation effect in comparison with the Ta/CoFeB/MgO-based MTJs. These results suggest that the Mo-based MTJs are more desirable for next generation spintronic devices.

  2. Anomalous magnetoresistance effect in sputtered TbFeCo relating to dispersed magnetic moment

    International Nuclear Information System (INIS)

    Yumoto, S.; Toki, K.; Okada, O.; Gokan, H.

    1988-01-01

    The electric resistance is sputtered TbFeCo has been measured at room temperature as a function of magnetic field perpendicular to the film plane. Two kinds of anomalous magnetoresistance have been observed. One is a magnetoresistance peak in the magnetization reversal region. The other is reversible change proportional to the applied magnetic field, appearing in the other region. The magnetoresistance peak agrees well with a curve calculated from experimental Hall loop, using a phenomenological relation between anomalous magnetoresistance and anomalous Hall voltage. The magnetoresistance peak is found to originate from magnetic domain walls. The linear magnetoresistance change for TM dominant samples appears in a direction opposite to that for RE dominant samples. The linear change can't be derived from Hall loop

  3. Optically Tunable Magnetoresistance Effect: From Mechanism to Novel Device Application.

    Science.gov (United States)

    Liu, Pan; Lin, Xiaoyang; Xu, Yong; Zhang, Boyu; Si, Zhizhong; Cao, Kaihua; Wei, Jiaqi; Zhao, Weisheng

    2017-12-28

    The magnetoresistance effect in sandwiched structure describes the appreciable magnetoresistance effect of a device with a stacking of two ferromagnetic layers separated by a non-magnetic layer (i.e., a sandwiched structure). The development of this effect has led to the revolution of memory applications during the past decades. In this review, we revisited the magnetoresistance effect and the interlayer exchange coupling (IEC) effect in magnetic sandwiched structures with a spacer layer of non-magnetic metal, semiconductor or organic thin film. We then discussed the optical modulation of this effect via different methods. Finally, we discuss various applications of these effects and present a perspective to realize ultralow-power, high-speed data writing and inter-chip connection based on this tunable magnetoresistance effect.

  4. Dynamics of anisotropic tissue growth

    Energy Technology Data Exchange (ETDEWEB)

    Bittig, Thomas; Juelicher, Frank [Max Planck Institute for the Physics of Complex Systems, Noethnitzer Strasse 38, 01187 Dresden (Germany); Wartlick, Ortrud; Kicheva, Anna; Gonzalez-Gaitan, Marcos [Department of Biochemistry and Department of Molecular Biology, Geneva University, Sciences II, Quai Ernest-Ansermet 30, 1211 Geneva 4 (Switzerland)], E-mail: Marcos.Gonzalez@biochem.unige.ch, E-mail: julicher@pks.mpg.de

    2008-06-15

    We study the mechanics of tissue growth via cell division and cell death (apoptosis). The rearrangements of cells can on large scales and times be captured by a continuum theory which describes the tissue as an effective viscous material with active stresses generated by cell division. We study the effects of anisotropies of cell division on cell rearrangements and show that average cellular trajectories exhibit anisotropic scaling behaviors. If cell division and apoptosis balance, there is no net growth, but for anisotropic cell division the tissue undergoes spontaneous shear deformations. Our description is relevant for the study of developing tissues such as the imaginal disks of the fruit fly Drosophila melanogaster, which grow anisotropically.

  5. Angular-dependent magnetoresistance study in Ca0.73La0.27FeAs2: a 'parent' compound of 112-type iron pnictide superconductors.

    Science.gov (United States)

    Xing, Xiangzhuo; Xu, Chunqiang; Li, Zhanfeng; Feng, Jiajia; Zhou, Nan; Zhang, Yufeng; Sun, Yue; Zhou, Wei; Xu, Xiaofeng; Shi, Zhixiang

    2017-12-07

    We report a study of angular-dependent magnetoresistance (AMR) with the magnetic field rotated in the plane perpendicular to the current on a Ca 0.73 La 0.27 FeAs 2 single crystal, which is regarded as a 'parent' compound of 112-type iron pnictide superconductors. A pronounced AMR with twofold symmetry is observed, signifying the highly anisotropic Fermi surface. By further analyzing the AMR data, we find that the Fermi surface above the structural/antiferromagnetic (AFM) transition (T s /T N ) is quasi-two-dimensional (quasi-2D), as revealed by the 2D scaling behavior of the AMR, Δρ/ρ(0) (H, θ)  =  Δρ/ρ(0) (µ 0 Hcosθ), θ being the magnetic field angle with respect to the c axis. While such 2D scaling becomes invalid at temperatures below T s /T N , the three-dimensional (3D) scaling approach by inclusion of the anisotropy of the Fermi surface is efficient, indicating that the appearance of the 3D Fermi surface contributes to anisotropic electronic transport. Compared with other experimental observations, we suspect that the additional 3D hole pocket (generated by the Ca d orbital and As1 p z orbital) around the Γ point in CaFeAs 2 will disappear in the heavily electron doped regime, and moreover, the Fermi surface should be reconstructed across the structural/AFM transition. Besides, a quasi-linear in-plane magnetoresistance with H//ab is observed at low temperatures and its possible origins are also discussed. Our results provide more information to further understand the electronic structure of 112-type IBSs.

  6. Prospect for tunneling anisotropic magneto-resistance in ferrimagnets: spin-orbit coupling effects in Mn.sub.3./sub.Ge and Mn.sub.3./sub.Ga

    Czech Academy of Sciences Publication Activity Database

    Khmelevskyi, S.; Shick, Alexander; Mohn, P.

    2016-01-01

    Roč. 109, č. 22 (2016), s. 1-4, č. článku 222402. ISSN 0003-6951 R&D Projects: GA ČR GB14-37427G Institutional support: RVO:68378271 Keywords : magneto-resistance * ferrimagnets Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.411, year: 2016

  7. Low temperature magnetoresistance in La1.32Sr1.68Mn2O7 layered manganite under hydrostatic pressure

    International Nuclear Information System (INIS)

    Kumaresavanji, M.; Fontes, M.B.

    2010-01-01

    The La 1.32 Sr 1.68 Mn 2 O 7 layered manganite system has been studied by the low temperature electrical resistance and magnetoresistance under hydrostatic pressure up to 25 kbar. We have observe both, a Curie temperature (T C ) and a metal-insulator transition (T MI ) at 118 K in the ambient pressure. The applied pressure shifts the T MI to higher temperature values and induces a second metal-insulator transition (T 2 MI ) at 90 K, in the temperature dependence of resistivity measurements. Also, the pressure suppresses the peak resistance abruptly at T C . When an external field of 5 T is applied, we have observed a large negative magnetoresistance of 300% at the transition temperature and a 128% at 4.5 K. However, the increased pressure decreases the magnetoresistance ratio gradually. When the pressure reaches its maximum available value of 25 kbar, the magnetoresistance ratio decreases at a rate of 1.3%/kbar. From our experimental results, the decrease of magnetoresistance ratio with pressure is explained by the pressure induced canted spin state which is not favor for the spin polarized intergrain tunneling in layered manganites.

  8. Evolution of the spin hall magnetoresistance in Cr2O3/Pt bilayers close to the Néel temperature

    Science.gov (United States)

    Schlitz, Richard; Kosub, Tobias; Thomas, Andy; Fabretti, Savio; Nielsch, Kornelius; Makarov, Denys; Goennenwein, Sebastian T. B.

    2018-03-01

    We study the evolution of magnetoresistance with temperature in thin film bilayers consisting of platinum and antiferromagnet Cr2O3 with its easy axis out of the plane. We vary the temperature from 20 °C to 60 °C, in the vicinity of the Néel temperature of Cr2O3 of approximately 37 °C. The magnetoresistive response is recorded during rotations of the external magnetic field in three mutually orthogonal planes. A large magnetoresistance having a symmetry consistent with a positive spin Hall magnetoresistance is observed in the paramagnetic phase of Cr2O3, which however vanishes when cooling to below the Néel temperature. Compared to analogous experiments in a Gd3Ga5O12/Pt bilayer, we conclude that a paramagnetic moment in the insulator induced by an applied magnetic field is not sufficient to explain the observed magnetoresistance. We speculate that the type of magnetic moment at the interface qualitatively impacts the spin angular momentum transfer, with the 3d moments of Cr sinking angular momentum much more efficiently as compared to the more localized 4f moments of Gd.

  9. Effect of crystallinity on the magnetoresistance in perovskite manganese oxide thin films

    International Nuclear Information System (INIS)

    Shreekala, R.; Rajeswari, M.; Ghosh, K.; Goyal, A.; Gu, J.Y.; Kwon, C.; Trajanovic, Z.; Boettcher, T.; Greene, R.L.; Ramesh, R.; Venkatesan, T.

    1997-01-01

    We report our study of the effect of crystallinity on the magnetoresistance in epitaxial and polycrystalline La 2/3 Ba 1/3 MnO 3 and La 2/3 Ca 1/3 MnO 3 thin films. Magnetoresistance in epitaxial films exhibits field dependence and temperature dependence similar to bulk single crystals and sintered bulk ceramics. The polycrystalline films exhibit a markedly different behavior. The magnetoresistance in this case shows either a monotonic increase or saturation with decreasing temperature in contrast to that of epitaxial films in which the magnetoresistance peaks close to the ferromagnetic transition temperature. The field dependence in the polycrystalline films is also remarkably different. At low fields, we observe a sharp drop in resistance followed by a more gradual decrease at higher fields. Our data suggest that in addition to the intrinsic magnetoresistance, grain-boundary transport contributes significantly to the magnetoresistance in polycrystalline films. copyright 1997 American Institute of Physics

  10. Magnetoresistance at artificial interfaces in epitaxial ferromagnetic thin films

    International Nuclear Information System (INIS)

    Fontcuberta, J.; Bibes, M.; Martinez, B.; Trtik, V.; Ferrater, C.; Sanchez, F.; Varela, M.

    2000-01-01

    Epitaxial La 2/3 Sr 1/3 MnO 3 and SrRuO 3 thin films have been grown by laser ablation on single-crystalline SrTiO 3 substrates. Prior to manganite or ruthenate deposition tracks have been patterned on the SrTiO 3 substrate by using an appropriately focused laser beam. In the experiments here reported linear tracks have been formed. The magnetotransport properties of the films, particularly the magnetoresistance, along paths parallel and perpendicular to the track have been extensively investigated and compared to similar data recorded on films grown on bicrystalline STO substrates. Whereas in LSMO a significant low-field tunnel magnetoresistance develops across the artificial interface, in SRO this tunnel contribution is absent. However, a significant high-field magnetoresistance is observed for both metallic and ferromagnetic systems. The results are analysed and discussed within the framework of the current understanding of double exchange and itinerant ferromagnets. Magnetoresistance data for various configurations of the track array are presented

  11. Deposition temperature influence on sputtered nanogranular magnetoresistive composites

    International Nuclear Information System (INIS)

    Mujika, M.; Arana, S.; Castano, E.

    2007-01-01

    Among different physical principles magnetic sensors for low magnetic field detection can be based on, granular giant magnetoresistances have been studied due to their high sensitivity to small field changes and gradual magnetoresistance change at low fields. Following this aim, nanogranular Ag-Co thin films, deposited by DC co-sputtering from Ag and Co targets at different deposition temperatures have been tested. Samples have been grown at room temperature, 100 and 200 deg. C and annealed in a mixture of N 2 and H 2 at 200 and 300 deg. C for 45 min. The samples that have shown the best performance have been subjected to two sets of measurements where an external field has been applied in-plane and perpendicular to the film plane. The best performance has been shown by the samples deposited at room temperature and annealed at 300 deg. C, reporting a maximum value of magnetoresistance of 16.7% at 1.4 T and a linear sensitivity of 63%/T between 0.04 and 0.07 T within a magnetoresistance range varying from 1.5% to 3% when subjected to an in-plane external field

  12. Magnetoresistance in two-dimensional array of Ge/Si quantum dots

    Science.gov (United States)

    Stepina, N. P.; Koptev, E. S.; Pogosov, A. G.; Dvurechenskii, A. V.; Nikiforov, A. I.; Zhdanov, E. Yu

    2012-07-01

    Magnetoresistance in two-dimensional array of Ge/Si was studied for a wide range of the conductance, where the transport regime changes from hopping to diffusive one. The behavior of magnetoresistance is similar for all samples; it is negative in weak fields and becomes positive with increasing of magnetic field. Negative magnetoresistance can be described in the frame of weak localization approach with suggestion that quantum interference contribution to the conductance is restricted not only by the phase breaking length but also by the localization length.

  13. Magnetoresistance in two-dimensional array of Ge/Si quantum dots

    International Nuclear Information System (INIS)

    Stepina, N P; Koptev, E S; Pogosov, A G; Dvurechenskii, A V; Nikiforov, A I; Zhdanov, E Yu

    2012-01-01

    Magnetoresistance in two-dimensional array of Ge/Si was studied for a wide range of the conductance, where the transport regime changes from hopping to diffusive one. The behavior of magnetoresistance is similar for all samples; it is negative in weak fields and becomes positive with increasing of magnetic field. Negative magnetoresistance can be described in the frame of weak localization approach with suggestion that quantum interference contribution to the conductance is restricted not only by the phase breaking length but also by the localization length.

  14. Angular-dependent magnetoresistance study in Ca0.73La0.27FeAs2: a ‘parent’ compound of 112-type iron pnictide superconductors

    Science.gov (United States)

    Xing, Xiangzhuo; Xu, Chunqiang; Li, Zhanfeng; Feng, Jiajia; Zhou, Nan; Zhang, Yufeng; Sun, Yue; Zhou, Wei; Xu, Xiaofeng; Shi, Zhixiang

    2018-01-01

    We report a study of angular-dependent magnetoresistance (AMR) with the magnetic field rotated in the plane perpendicular to the current on a Ca0.73La0.27FeAs2 single crystal, which is regarded as a ‘parent’ compound of 112-type iron pnictide superconductors. A pronounced AMR with twofold symmetry is observed, signifying the highly anisotropic Fermi surface. By further analyzing the AMR data, we find that the Fermi surface above the structural/antiferromagnetic (AFM) transition (T s/T N) is quasi-two-dimensional (quasi-2D), as revealed by the 2D scaling behavior of the AMR, Δρ/ρ(0) (H, θ)  =  Δρ/ρ(0) (µ 0 Hcosθ), θ being the magnetic field angle with respect to the c axis. While such 2D scaling becomes invalid at temperatures below T s/T N, the three-dimensional (3D) scaling approach by inclusion of the anisotropy of the Fermi surface is efficient, indicating that the appearance of the 3D Fermi surface contributes to anisotropic electronic transport. Compared with other experimental observations, we suspect that the additional 3D hole pocket (generated by the Ca d orbital and As1 p z orbital) around the Γ point in CaFeAs2 will disappear in the heavily electron doped regime, and moreover, the Fermi surface should be reconstructed across the structural/AFM transition. Besides, a quasi-linear in-plane magnetoresistance with H//ab is observed at low temperatures and its possible origins are also discussed. Our results provide more information to further understand the electronic structure of 112-type IBSs.

  15. Effect of low temperature neutron irradiation on the magnetoresistivity in stabilizer materials for a superconducting magnet

    International Nuclear Information System (INIS)

    Nakata, Kiyotomo; Tada, Naobumi; Masaoka, Isao; Takamura, Saburo.

    1985-01-01

    Magnetoresistivity changes caused by neutron irradiation at 5 K, annealing up to 300 K and cyclic irradiation are studied in copper and aluminuim stabilizer materials at 4.2 K. The radiation-induced resistivity in Al is about three times as large as that in Cu, and the resistivities in both Al and Cu are independent of the purity and the degree of cold-work of the samples. The radiation-induced magnetoresistivity of the high purity Cu with R.R.R. (R sub(298 K)/R sub(4.2 K)) of 1400 is larger than that of the impure Cu with R.R.R. of 300 and 280. The magnetoresistivities of the high purity Cu and Al with R.R.R. of 1500 increase with the magetic field. Magnetoresistivity change with the magnetic field in the irradiated Cu mostly follows Kohler's rule, and that in the irradiated Al does not follow the rule at high magnetic fields. By the annealing at 300 K after the irradiation, the radiation-induced resistivity is completely annihilated in the Al, but about 20 % of the resistivity retains in the full-annealed Cu and the retained resistivity is accumulated during the cyclic irradiation. Though the accumulated resistivity in the cold-worked Cu is smaller than that in the full-annealed one, the resistivity before irradiation in the cold-worked samples is very large. From the above results, the full-annealed Cu with R.R.R. of about 300 is considered to be the best material as a stabilizer used under irradiation. (author)

  16. Hanle Magnetoresistance in Thin Metal Films with Strong Spin-Orbit Coupling.

    Science.gov (United States)

    Vélez, Saül; Golovach, Vitaly N; Bedoya-Pinto, Amilcar; Isasa, Miren; Sagasta, Edurne; Abadia, Mikel; Rogero, Celia; Hueso, Luis E; Bergeret, F Sebastian; Casanova, Fèlix

    2016-01-08

    We report measurements of a new type of magnetoresistance in Pt and Ta thin films. The spin accumulation created at the surfaces of the film by the spin Hall effect decreases in a magnetic field because of the Hanle effect, resulting in an increase of the electrical resistance as predicted by Dyakonov [Phys. Rev. Lett. 99, 126601 (2007)]. The angular dependence of this magnetoresistance resembles the recently discovered spin Hall magnetoresistance in Pt/Y(3)Fe(5)O(12) bilayers, although the presence of a ferromagnetic insulator is not required. We show that this Hanle magnetoresistance is an alternative simple way to quantitatively study the coupling between charge and spin currents in metals with strong spin-orbit coupling.

  17. Quantum and classical contributions to linear magnetoresistance in topological insulator thin films

    International Nuclear Information System (INIS)

    Singh, Sourabh; Gopal, R. K.; Sarkar, Jit; Mitra, Chiranjib

    2016-01-01

    Three dimensional topological insulators possess backscattering immune relativistic Dirac fermions on their surface due to nontrivial topology of the bulk band structure. Both metallic and bulk insulating topological insulators exhibit weak-antilocalization in the low magnetic field and linear like magnetoresistance in higher fields. We explore the linear magnetoresistance in bulk insulating topological insulator Bi 2-x Sb x Te 3-y Se y thin films grown by pulsed laser deposition technique. Thin films of Bi 2-x Sb x Te 3-y Se y were found to be insulating in nature, which conclusively establishes the origin of linear magnetoresistance from surface Dirac states. The films were thoroughly characterized for their crystallinity and composition and then subjected to transport measurements. We present a careful analysis taking into considerations all the existing models of linear magnetoresistance. We comprehend that the competition between classical and quantum contributions to magnetoresistance results in linear magnetoresistance in high fields. We observe that the cross-over field decreases with increasing temperature and the physical argument for this behavior is explained.

  18. Frozen magnetoresistance at magnetization reversal of granular Bi(Pb)-HTSC

    International Nuclear Information System (INIS)

    Sukhanov, A.A.; Omelchenko, V.I.

    2004-01-01

    The frozen magnetoresistance dependences of granular Bi(Pb)-HTSC samples on fields initiating a magnetic flux trapping and on magnetic reversal fields Rt(Hi, Hr) are investigated. It is found that the Rt (Hr) dependences are nonmonotonous. The frozen magnetoresistance decreases substantially after the first pulse Hr applied (Hr < Hi) but remains practically unchanged at subsequent remagnetization by magnetic pulses of alternating polarity and of the same amplitude. The effect of magnetic reversal on magnetoresistance anisotropy and the negative magnetoresistance phenomenon are studied. Is shown that the results obtained are inconsistent with the model of critical state for SC grains and the model of SC loops but are well described quantitatively by the proposed Bi(Pb)-HTSC model according to which the magnetic flux trapping occurs in normal grains with HTSC shells and the sample resistance is determined by weak link chains

  19. Magnetoresistant Co/Cu multilayers: effect of crystallographic orientation of the layers

    International Nuclear Information System (INIS)

    Boher, P.; Giron, F.; Houdy, P.; Beauvillain, P.; Chappert, C.; Veillet, P.

    1992-01-01

    In the last few years ferromagnetic/non-ferromagnetic multilayers have received considerable attention due to their great interest formagnetoresistive applications. Giant magnetoresistance has been observed in the Cu/Co system but with quite high saturation field (>>1 kOe). In this paper we report on an original way to enhance this characterisitc, using unusual fcc left angle 100 right angle cristallographic orientation. Special preparation of the right angle 100 right angle silicon substrates is investigated using in-situ kinetic ellipsometry, RHEED, grazing X-ray reflection and X-ray diffraction. We show that good quality fcc right angle 100 right angle pseudo-epitaxial copper surface can be obtained only when two conditions are fulfilled: first the silicon surface must be completely free of native oxide and second the copper buffer layer must be annealed under ultrahigh vacuum. Perfectly clean silicon surfaces are obtained by chemical etching followed by flash heating under ultrahigh vacuum. The copper buffer layer reacts with silicon and gives a textured fcc right angle 100 right angle Cu phase with a 45 rotation of the Cu left angle 100 right angle lattice with regards to the Si right angle 100 right angle one. Additional annealing leads to an homogencous interface silicide layer and improves the cristallinity of the Cu buffer layer. Cu/Co multilayers deposited on this kind of substrate show a well-defined fcc right angle 100 right angle texture for a large range of layer thickness. Oscillation of magnetoresistance with the copper thickness is observed with a period of about 10 A. The maximum of magnetoresistance is found for 20.9 A of Cu (ΔR/R∼6%), and the differential magnetoresistance is very high (ΔR/RΔH = 1.4 kOe -1 ). Combination of antiferromagnetic coupling and quadratic in-plane anisotropy of this special cristallographic orientation is responsible for this improvement. (orig.)

  20. Large magnetoresistance in Heusler-alloy-based epitaxial magnetic junctions with semiconducting Cu(In{sub 0.8}Ga{sub 0.2})Se{sub 2} spacer

    Energy Technology Data Exchange (ETDEWEB)

    Kasai, S. [Research Center for Magnetic and Spintronic Materials, National Institute for Materials Science (NIMS), 1-2-1 Sengen, Tsukuba 305-0047 (Japan); Center for Emergent Matter Science, RIKEN, 2-1 Hirosawa, Wako 351-0198 (Japan); Takahashi, Y. K.; Ohkubo, T. [Research Center for Magnetic and Spintronic Materials, National Institute for Materials Science (NIMS), 1-2-1 Sengen, Tsukuba 305-0047 (Japan); Cheng, P.-H.; Ikhtiar,; Mitani, S.; Hono, K. [Research Center for Magnetic and Spintronic Materials, National Institute for Materials Science (NIMS), 1-2-1 Sengen, Tsukuba 305-0047 (Japan); Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba 305-8577 (Japan); Kondou, K. [Center for Emergent Matter Science, RIKEN, 2-1 Hirosawa, Wako 351-0198 (Japan); Otani, Y. [Center for Emergent Matter Science, RIKEN, 2-1 Hirosawa, Wako 351-0198 (Japan); Institute for Solid State Physics, University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa 277-8581 (Japan)

    2016-07-18

    We investigated the structure and magneto-transport properties of magnetic junctions using a Co{sub 2}Fe(Ga{sub 0.5}Ge{sub 0.5}) Heusler alloy as ferromagnetic electrodes and a Cu(In{sub 0.8}Ga{sub 0.2})Se{sub 2} (CIGS) semiconductor as spacers. Owing to the semiconducting nature of the CIGS spacer, large magnetoresistance (MR) ratios of 40% at room temperature and 100% at 8 K were obtained for low resistance-area product (RA) values between 0.3 and 3 Ω μm{sup 2}. Transmission electron microscopy observations confirmed the fully epitaxial growth of the chalcopyrite CIGS layer, and the temperature dependence of RA indicated that the large MR was due to spin dependent tunneling.

  1. Study of magnetoresistance in the supercooled state of Dy-Y alloys

    Science.gov (United States)

    Jena, Rudra Prasad; Lakhani, Archana

    2018-02-01

    We report the magnetoresistance studies on Dy1-xYx (x ≤ 0.05) alloys across the first order helimagnetic to ferromagnetic phase transition. These alloys exhibit multiple magnetic phases on varying the temperature and magnetic field. The magnetoresistance studies in the hysteresis region shows irreversibility in forward and reverse field cycles. The resistivity values at zero field for these alloys after zero field cooling to the measurement temperatures, are different in both forward and reverse field cycles. The path dependence of magnetoresistance suggests the presence of helimagnetic phase as the supercooled metastable state which transforms to the stable ferromagnetic state on increasing the field. At high magnetic fields negative magnetoresistance following a linear dependence with field is observed which is attributed to the magnon scattering.

  2. Magnetoresistance of nanogranular Ni/NiO controlled by exchange anisotropy

    International Nuclear Information System (INIS)

    Del Bianco, L.; Spizzo, F.; Tamisari, M.; Allia, P.

    2013-01-01

    A link between exchange anisotropy and magnetoresistance has been found to occur in a Ni/NiO sample consisting of Ni nanocrystallites (mean size ∼13 nm, Ni content ∼33 vol%) dispersed in a NiO matrix. This material shows metallic-type electric conduction and isotropic spin-dependent magnetoresistance as well as exchange bias effect. The latter is the outcome of an exchange anisotropy arising from the contact interaction between the Ni phase and the NiO matrix. Combined analysis of magnetization M(H) and magnetoresistance MR(H) loops measured in the 5–250 K temperature range after zero-field-cooling (ZFC) and after field-cooling (FC) from 300 K reveals that the magnetoresistance is influenced by exchange anisotropy, which is triggered by the FC process and can be modified in strength by varying the temperature. Compared to the ZFC case, the exchange anisotropy produces a horizontal shift of the FC MR(H) loop along with a reduction of the MR response associated to the reorientation of the Ni moments. A strict connection between magnetoresistance and remanent magnetization of FC loops on one side and the exchange field on the other, ruled by exchange anisotropy, is indicated. - Highlights: • Nanogranular Ni/NiO with giant magnetoresistance (MR) and exchange bias effect. • Exchange anisotropy produces a shift of the field-cooled MR(H) loop and reduces MR. • MR, remanence of field-cooled loops and exchange field are three correlated quantities. • It is possible to control MR of nanogranular systems through the exchange anisotropy

  3. Stripe domains and magnetoresistance in thermally deposited nickel films

    International Nuclear Information System (INIS)

    Sparks, P.D.; Stern, N.P.; Snowden, D.S.; Kappus, B.A.; Checkelsky, J.G.; Harberger, S.S.; Fusello, A.M.; Eckert, J.C.

    2004-01-01

    We report a study of the domain structure and magnetoresistance of thermally deposited nickel films. For films thicker than 17 nm, we observe striped domains with period varying with film thickness as a power law with exponent 0.21±0.02 up to 120 nm thickness. There is a negative magnetoresistance for fields out of the plane

  4. Stripe domains and magnetoresistance in thermally deposited nickel films

    Science.gov (United States)

    Sparks, P. D.; Stern, N. P.; Snowden, D. S.; Kappus, B. A.; Checkelsky, J. G.; Harberger, S. S.; Fusello, A. M.; Eckert, J. C.

    2004-05-01

    We report a study of the domain structure and magnetoresistance of thermally deposited nickel films. For films thicker than 17nm, we observe striped domains with period varying with film thickness as a power law with exponent 0.21+/-0.02 up to 120nm thickness. There is a negative magnetoresistance for fields out of the plane.

  5. Stripe domains and magnetoresistance in thermally deposited nickel films

    Energy Technology Data Exchange (ETDEWEB)

    Sparks, P.D. E-mail: sparks@hmc.edu; Stern, N.P.; Snowden, D.S.; Kappus, B.A.; Checkelsky, J.G.; Harberger, S.S.; Fusello, A.M.; Eckert, J.C

    2004-05-01

    We report a study of the domain structure and magnetoresistance of thermally deposited nickel films. For films thicker than 17 nm, we observe striped domains with period varying with film thickness as a power law with exponent 0.21{+-}0.02 up to 120 nm thickness. There is a negative magnetoresistance for fields out of the plane.

  6. Colossal Magnetoresistance in La-Y-Ca-Mn-O Films

    NARCIS (Netherlands)

    Chen, L.H.; Tiefel, T.H.; Jin, S.; Palstra, T.T.M.; Ramesh, R.; Kwon, C.

    1996-01-01

    Magnetoresistance behavior of La0.60Y0.07CaMnOx, thin films epitaxially grown on LaAlO3 has been investigated. The films exhibit colossal magnetoresistance with the MR ratio in excess of 10^8% at ~60K, H = 7T, which is the highest ever reported for thin film manganites. The partial substitution of

  7. Elastic and electronic tuning of magnetoresistance in MoTe$_2$

    OpenAIRE

    Yang, Junjie; Colen, Jonathan; Liu, Jun; Nguyen, Manh Cuong; Chern, Gia-Wei; Louca, Despina

    2017-01-01

    Quasi-two dimensional transition metal dichalcogenides (TMD) exhibit dramatic properties that may transform electronic and photonic devices. We report on how the anomalously large magnetoresistance (MR) observed under high magnetic field in MoTe$_2$, a type II Weyl semimetal, can be reversibly controlled under tensile strain. The MR is enhanced by as much as ~ 30 % at low temperatures and high magnetic fields, when uniaxial strain is applied along the $a$-crystallographic direction and reduce...

  8. Dependence of Fe/Cr superlattice magnetoresistance on orientation of external magnetic field

    International Nuclear Information System (INIS)

    Ustinov, V.V.; Romashev, L.N.; Minin, V.I.; Semerikov, A.V.; Del', A.R.

    1995-01-01

    The paper presents the results of investigations into giant magnetoresistance of [Fe/Cr] 30 /MgO superlattices obtained using molecular-beam epitaxy under various orientations of magnetic field relatively to the layers of superlattice and to the direction of current flow. Theory of orientation dependence of superlattice magnetoresistance enabling to describe satisfactorily behaviour of magnetoresistance at arbitrary direction of magnetic field on the ground of results of magnetoresistance measurements in magnetic field parallel and perpendicular to plane of layers, is elaborated. It is pointed out that it is possible to obtain field dependence of superlattice magnetization on the ground of measurement results. 9 refs., 6 figs

  9. On the magnetoresistance of heavy fermion compounds

    International Nuclear Information System (INIS)

    Lee Chengchung; Chen Chung

    1992-09-01

    Starting from two-conduction-band Anderson lattice model, the magneto-transport properties of heavy fermion systems are studied in the slave boson mean field theory. The residual magnetoresistivity induced by different kinds of impurities is calculated, and the experimentally detected positive maximum structure in the residual magnetoresistance of heavy fermion systems is reproduced. The transition of field-dependent resistivity from nonmonotonic to monotonic behaviour with increasing temperature can be explained naturally by including the charge fluctuation effect. The influence of applied pressure is also investigated. (author). 22 refs, 5 figs

  10. Anisotropic elliptic optical fibers

    Science.gov (United States)

    Kang, Soon Ahm

    1991-05-01

    The exact characteristic equation for an anisotropic elliptic optical fiber is obtained for odd and even hybrid modes in terms of infinite determinants utilizing Mathieu and modified Mathieu functions. A simplified characteristic equation is obtained by applying the weakly guiding approximation such that the difference in the refractive indices of the core and the cladding is small. The simplified characteristic equation is used to compute the normalized guide wavelength for an elliptical fiber. When the anisotropic parameter is equal to unity, the results are compared with the previous research and they are in close agreement. For a fixed value normalized cross-section area or major axis, the normalized guide wavelength lambda/lambda(sub 0) for an anisotropic elliptic fiber is small for the larger value of anisotropy. This condition indicates that more energy is carried inside of the fiber. However, the geometry and anisotropy of the fiber have a smaller effect when the normalized cross-section area is very small or very large.

  11. Quantum conductance in electrodeposited nanocontacts and magnetoresistance measurements

    DEFF Research Database (Denmark)

    Elhoussine, F.; Encinas, A.; Mátéfi-Tempfli, Stefan

    2003-01-01

    The conductance and magnetoresistance measurements in magnetic Ni-Ni and Co-Ni nanocontacts prepared by electrodeposition within the pores of a track of track-etched polymer membrane were discussed. At room temperature, Ni-Ni constrictions were found to show broad quantization plateaus of conduct...... of conductance during their dissolution in units of e/h, as expected for ferromagnetic ballistic nanocontacts. The measurement of the positive and negative magnetoresistance in Co-Ni nanocontacts was also elaborated....

  12. Magnetotransport effects of ultrathin Ni80Fe20 films probed in situ

    International Nuclear Information System (INIS)

    Krzyk, S; Schmidsfeld, A; Klaeui, M; Ruediger, U

    2010-01-01

    We investigated the magnetoresistance of Permalloy (Ni 80 Fe 20 ) films with thicknesses ranging from a single monolayer to 12 nm, grown on Al 2 O 3 , MgO and SiO 2 substrates. Growth and transport measurements were carried out at 80 K in UHV. Applying in-plane magnetic vector fields up to 100 mT, the magnetotransport properties were ascertained during growth. With increasing thickness the films exhibited a gradual transition from tunnelling magnetoresistance to anisotropic magnetoresistance. This corresponds to the evolution of the film structure from separated small islands to a network of interconnected grains, as well as the film's transition from superparamagnetic to ferromagnetic behaviour. Using an analysis based on a theoretical model of island growth, we found that the observed evolution of the magnetoresistance in the tunnelling regime originated from changes in the island size distribution during growth. Depending on the substrate material, significant differences in the magnetoresistance response in the transition regime between tunnelling magnetoresistance and anisotropic magnetoresistance were found. We attributed this to an increasingly pronounced island growth, and to a slower percolation process of Permalloy when comparing growth on SiO 2 , MgO and Al 2 O 3 substrates. The different growth characteristics resulted in a markedly earlier onset of both tunnelling magnetoresistance and anisotropic magnetoresistance for SiO 2 . For Al 2 O 3 in particular the growth mode results in a structure of the film containing two different contributions to ferromagnetism, which lead to two distinct coercive fields in the high thickness regime.

  13. Magnetoresistance in amorphous NdFeB/FeB compositionally modulated multilayers

    International Nuclear Information System (INIS)

    Peral, G.; Briones, F.; Vicent, J.L.

    1991-01-01

    Resistance measurements have been done in amorphous Nd 12 Fe 80 B 8 sputtered films and in amorphous sputtered Nd 26 Fe 68 B 6 /Fe 92 B 8 multilayers between 6 and 150 K with applied magnetic field parallel (LMR) and perpendicular (TMR) up to 7 T. The samples were grown by dc triode sputtering, with nominal unequal (2:1) layer thicknesses. The layered character of the samples have been tested by x-ray diffraction. Longitudinal magnetoresistance (LMR) is positive and transverse magnetoresistance (TMR) is negative. The magnetoresistance values are higher than in amorphous ferromagnets, and multilayering of these alloys produces much larger magnetoresistance values than either alloy alone and there is a strong dependence on the multilayer wavelength. The MR shows a weak temperature dependence in the temperature interval that was investigated

  14. Electroresistance and magnetoresistance in La0.9Ba0.1MnO3 thin films

    International Nuclear Information System (INIS)

    Hu, F.X.; Gao, J.; Wang, Z.H.

    2006-01-01

    The electroresistance and magnetoresistance effects have been investigated in La 0.9 Ba 0.1 MnO 3 epitaxial thin films. Tensile strain caused by substrate mismatch makes the Curie temperature T C of the film at ∼300 K. The influence of an applied dc-current on the resistance in the absence of a magnetic field was studied. Significant change of the peak resistance at different currents was found. The reduction of the peak resistance reaches ∼27% with an electric current density up to 1.3 x 10 5 A cm -2 . We also studied colossal magnetoresistance (CMR) effect in the films. Applying a magnetic field of 2 T could lead to a magnetoresistance as large as 42%. The reduction of resistance caused by a current density ∼1.3 x 10 5 A cm -2 was found to be equivalent to the CMR effect caused by 1.5 T near T C . The phenomenon that the resistance in CMR manganites could be easily controlled by the electric current should be of high interest for both fundamental research and practical applications

  15. Unidirectional spin Hall magnetoresistance in topological insulator/ferromagnetic layer heterostructures

    Science.gov (United States)

    Kally, James; Lv, Yang; Zhang, Delin; Lee, Joon Sue; Samarth, Nitin; Wang, Jian-Ping; Department of Electrical; Computer Engineering, University of Minnesota, Minneapolis Collaboration; Department of Physics, Pennsylvania State University Collaboration

    The surface states of topological insulators offer a potentially very efficient way to generate spins and spin-orbit torques to magnetic moments in proximity. The switching by spin-orbit torque itself only requires two terminals so that a charge current can be applied. However, a third terminal with additional magnetic tunneling junction structure is needed to sense the magnetization state if such devices are used for memory and logic applications. The recent discovery of unidirectional spin Hall magnetoresistance in heavy metal/ferromagnetic and topological insulator/magnetically doped topological insulator systems offers an alternative way to sense magnetization while still keeping the number of terminals to minimal two. The unidirectional spin Hall magnetoresistance in topological insulator/strong ferromagnetic layer heterostructure system has yet not been reported. In this work, we report our experimental observations of such magnetoresistance. It is found to be present and comparable to the best result of the previous reported Ta/Co systems in terms of magnetoresistance per current density per total resistance.

  16. Positive magnetoresistance in Co40Fe40B20/SiO2/Si heterostructure

    KAUST Repository

    Zhang, Y.

    2016-07-20

    Current-perpendicular-to-plane electronic transport properties and magnetoresistance of amorphous Co40Fe40B20/SiO2/Si heterostructures are investigated systematically. A backward diode-like rectifying behavior was observed due to the formation of a Schottky barrier between Co40Fe40B20 and Si. The junction resistance shows a metal-insulator transition with decreasing temperature in both the forward and reverse ranges. A large positive magnetoresistance (MR) of ∼2300% appears at 200 K. The positive MR can be attributed to the magnetic-field-controlled impact ionization process of carriers. MR shows a temperature-peak-type character under a constant bias current, which is related to the spin-dependent barrier in the Si near the interface. © CopyrightEPLA, 2016.

  17. Positive magnetoresistance in Co40Fe40B20/SiO2/Si heterostructure

    KAUST Repository

    Zhang, Y.; Mi, W. B.; Zhang, Xixiang

    2016-01-01

    Current-perpendicular-to-plane electronic transport properties and magnetoresistance of amorphous Co40Fe40B20/SiO2/Si heterostructures are investigated systematically. A backward diode-like rectifying behavior was observed due to the formation of a Schottky barrier between Co40Fe40B20 and Si. The junction resistance shows a metal-insulator transition with decreasing temperature in both the forward and reverse ranges. A large positive magnetoresistance (MR) of ∼2300% appears at 200 K. The positive MR can be attributed to the magnetic-field-controlled impact ionization process of carriers. MR shows a temperature-peak-type character under a constant bias current, which is related to the spin-dependent barrier in the Si near the interface. © CopyrightEPLA, 2016.

  18. Flat magnetic exchange springs as mechanism for additional magnetoresistance in magnetic nanoisland arrays

    Energy Technology Data Exchange (ETDEWEB)

    Boltaev, A.P.; Pudonin, F.A. [P. N. Lebedev Physical Institute of the Russian Academy of Sciences, Leninskiy Prospekt 53, 119991 Moscow (Russian Federation); Sherstnev, I.A., E-mail: sherstnev@lebedev.ru [P. N. Lebedev Physical Institute of the Russian Academy of Sciences, Leninskiy Prospekt 53, 119991 Moscow (Russian Federation); Egorov, D.A. [National Research Nuclear University MEPhI, Kashirskoe shosse 31, 115409 Moscow (Russian Federation); Kozmin, A.M. [National Research University of Electronic Technology, Shokin Square, 1, Zelenograd, 124482 Moscow (Russian Federation)

    2017-04-15

    Process of magnetization and magnetoresistance have been studied in nanoisland bilayer systems of FeNi-Co. Hysteresis loops show characteristic features (steps) most clearly observed in certain orientations of the sample in a magnetic field. To explain these features the concept of flat magnetic exchange spring has been introduced for nanoisland bilayers. It has been proposed that additional magnetoresistance can be the result of spin-dependent scattering of electrons in the area of flat magnetic exchange spring. Magnetoresistance studies of bilayer systems has shown that additional magnetoresistance occurs at the same magnetic fields as steps on hysteresis loops. - Highlights: • Metallic FeNi-Co bilayers are studied. • FeNi and Co layers magnetize independently. • Concept of flat spin spring is proposed. • Additional magnetoresistance occurs in intermediate magnetic fields.

  19. Giant current-perpendicular-to-plane magnetoresistance in multilayer graphene as grown on nickel.

    Science.gov (United States)

    Bodepudi, S C; Singh, A P; Pramanik, S

    2014-05-14

    Strong magnetoresistance effects are often observed in ferromagnet-nonmagnet multilayers, which are exploited in state-of-the-art magnetic field sensing and data storage technologies. In this work we report a novel current-perpendicular-to-plane magnetoresistance effect in multilayer graphene as grown on a catalytic nickel surface by chemical vapor deposition. A negative magnetoresistance effect of ∼10(4)% has been observed, which persists even at room temperature. This effect is correlated with the shape of the 2D peak as well as with the occurrence of D peak in the Raman spectrum of the as-grown multilayer graphene. The observed magnetoresistance is extremely high as compared to other known materials systems for similar temperature and field range and can be qualitatively explained within the framework of "interlayer magnetoresistance" (ILMR).

  20. Flat magnetic exchange springs as mechanism for additional magnetoresistance in magnetic nanoisland arrays

    International Nuclear Information System (INIS)

    Boltaev, A.P.; Pudonin, F.A.; Sherstnev, I.A.; Egorov, D.A.; Kozmin, A.M.

    2017-01-01

    Process of magnetization and magnetoresistance have been studied in nanoisland bilayer systems of FeNi-Co. Hysteresis loops show characteristic features (steps) most clearly observed in certain orientations of the sample in a magnetic field. To explain these features the concept of flat magnetic exchange spring has been introduced for nanoisland bilayers. It has been proposed that additional magnetoresistance can be the result of spin-dependent scattering of electrons in the area of flat magnetic exchange spring. Magnetoresistance studies of bilayer systems has shown that additional magnetoresistance occurs at the same magnetic fields as steps on hysteresis loops. - Highlights: • Metallic FeNi-Co bilayers are studied. • FeNi and Co layers magnetize independently. • Concept of flat spin spring is proposed. • Additional magnetoresistance occurs in intermediate magnetic fields.

  1. Light-induced magnetoresistance in solution-processed planar hybrid devices measured under ambient conditions.

    Science.gov (United States)

    Banerjee, Sreetama; Bülz, Daniel; Reuter, Danny; Hiller, Karla; Zahn, Dietrich R T; Salvan, Georgeta

    2017-01-01

    We report light-induced negative organic magnetoresistance (OMAR) measured in ambient atmosphere in solution-processed 6,13-bis(triisopropylsilylethynyl)pentacene (TIPS-pentacene) planar hybrid devices with two different device architectures. Hybrid electronic devices with trench-isolated electrodes (HED-TIE) having a channel length of ca. 100 nm fabricated in this work and, for comparison, commercially available pre-structured organic field-effect transistor (OFET) substrates with a channel length of 20 µm were used. The magnitude of the photocurrent as well as the magnetoresistance was found to be higher for the HED-TIE devices because of the much smaller channel length of these devices compared to the OFETs. We attribute the observed light-induced negative magnetoresistance in TIPS-pentacene to the presence of electron-hole pairs under illumination as the magnetoresistive effect scales with the photocurrent. The magnetoresistance effect was found to diminish over time under ambient conditions compared to a freshly prepared sample. We propose that the much faster degradation of the magnetoresistance effect as compared to the photocurrent was due to the incorporation of water molecules in the TIPS-pentacene film.

  2. Magnetoresistance and Hall resistivity of semimetal WTe2 ultrathin flakes.

    Science.gov (United States)

    Luo, Xin; Fang, Chi; Wan, Caihua; Cai, Jialin; Liu, Yong; Han, Xiufeng; Lu, Zhihong; Shi, Wenhua; Xiong, Rui; Zeng, Zhongming

    2017-04-07

    This article reports the characterization of WTe 2 thin flake magnetoresistance and Hall resistivity. We found it does not exhibit magnetoresistance saturation when subject to high fields, in a manner similar to their bulk characteristics. The linearity of Hall resistivity in our devices confirms the compensation of electrons and holes. By relating experimental results to a classic two-band model, the lower magnetoresistance values in our samples is demonstrated to be caused by decreased carrier mobility. The dependence of mobility on temperature indicates the main role of optical phonon scattering at high temperatures. Our results provide more detailed information on carrier behavior and scattering mechanisms in WTe 2 thin films.

  3. Phase transitions and transport in anisotropic superconductors with large thermal fluctuations

    International Nuclear Information System (INIS)

    Fisher, D.S.

    1991-01-01

    Fluctuation effects in conventional superconductors such as broadening of phase transitions and flux creep tend to be very small primarily because of the large coherence lengths. Thus mean field theory, with only small fluctuation corrections, usually provides an adequate description of these systems. Regimes in which fluctuation effects cause qualitatively different physics are very difficult to study as they typically occur in very small regions of the phase diagram or, in transport, require measuring extremely small voltages. In striking contrast, in the high temperature cuprate superconductors a combination of factors - short coherence lengths, anisotropy and higher temperatures - make fluctuation effects many orders of magnitude larger. The current understanding of transport and phase transitions in the cuprate superconductors-particularly YBCO and BSCCO-is reviewed. New results are presented on the two-dimensional regimes and 2D-3D crossover in the strongly anisotropic case of BSCCO. The emphasis is on pinning and vortex glass behavior

  4. Magnetoresistance of individual ferromagnetic GaAs/(Ga,Mn)As core-shell nanowires

    OpenAIRE

    Butschkow, Christian H.; Reiger, Elisabeth; Geißler, Stefan; Rudolph, Andreas; Soda, Marcello; Schuh, Dieter; Woltersdorf, Georg; Wegscheider, Werner; Weiss, Dieter

    2011-01-01

    We investigate, angle dependent, the magnetoresistance (MR) of individual self-assembled ferromagnetic GaAs/(Ga,Mn)As core-shell nanowires at cryogenic temperatures. The shape of the MR traces and the observed strong anisotropies in transport can be ascribed to the interplay of the negative magnetoresistance effect and a strong uniaxial anisotropy with the magnetic easy direction pointing along the wire axis. The magnetoresistance can be well described by a quantitative analysis based on the ...

  5. Magnetoresistance of amorphous CuZr: weak localization in a three dimensional system

    International Nuclear Information System (INIS)

    Bieri, J.B.; Fert, A.; Creuzet, G.

    1984-01-01

    Observations of anomalous magnetoresistance in amorphous CuZr at low temperature are reported. The magnetoresistance can be precisely accounted for in theoretical models of localization for 3-dimensional metallic systems in the presence of strong spin-orbit interactions (with a significant additional contribution from the quenching of superconducting fluctuations at the lowest temperatures). Magnetoresistance measurements on various other systems show that such 3-dimensional localization effects are very generally observed in amorphous alloys. (author)

  6. Large Magnetoresistance at High Bias Voltage in Double-layer Organic Spin Valves

    Science.gov (United States)

    Subedi, R. C.; Liang, S. H.; Geng, R.; Zhang, Q. T.; Lou, L.; Wang, J.; Han, X. F.; Nguyen, T. D.

    We report studies of magnetoresistance (MR) in double-layer organic spin valves (DOSV) using tris (8-hydroxyquinolinato) aluminum (Alq3) spacers. The device exhibits three distinct resistance levels depending on the relative magnetizations of the ferromagnetic electrodes. We observed a much weaker bias voltage dependence of MR in the device compared to that in the conventional organic spin valve (OSV). The MR magnitude reduces by the factor of two at 0.7 V bias voltage in the DOSV compared to 0.02 V in the conventional OSV. Remarkably, the MR magnitude reaches 0.3% at 6 V bias in the DOSVs, the largest MR response ever reported in OSVs at this bias. Our finding may have a significant impact on achieving high efficient bipolar OSVs strictly performed at high voltages. University of Georgia start-up fund, Ministry of Education, Singapore, National Natural Science Foundation of China.

  7. Stability conditions for the Bianchi type II anisotropically inflating universes

    International Nuclear Information System (INIS)

    Kao, W.F.; Lin, Ing-Chen

    2009-01-01

    Stability conditions for a class of anisotropically inflating solutions in the Bianchi type II background space are shown explicitly in this paper. These inflating solutions were known to break the cosmic no-hair theorem such that they do not approach the de Sitter universe at large times. It can be shown that unstable modes of the anisotropic perturbations always exist for this class of expanding solutions. As a result, we show that these set of anisotropically expanding solutions are unstable against anisotropic perturbations in the Bianchi type II space

  8. Studies of colossal magnetoresistive oxides with radioactive isotopes

    CERN Document Server

    CERN. Geneva. ISOLDE and Neutron Time-of-Flight Experiments Committee; Amaral, V S; Araújo, J P; Butz, T; Correia, J G; Dubourdieu, C; Habermeier, H U; Lourenço, A A; Marques, J G; Da Silva, M F A; Senateur, J P; Soares, J C; Sousa, J B; Suryan, R; Tokura, Y; Tavares, P B; Tomioka, Y; Tröger, W; Vantomme, A; Vieira, J M; Wahl, U; Weiss, F P; INTC

    2000-01-01

    We propose to study Colossal Magnetoresistive (CMR) oxides with several nuclear techniques, which use radioactive elements at ISOLDE. Our aim is to provide local and element selective information on some of the doping mechanisms that rule electronic interactions and magnetoresistance, in a complementary way to the use of conventional characterisation techniques. Three main topics are proposed: \\\\ \\\\ a) Studies of local [charge and] structural modifications in antiferromagnetic LaMnO$_{3+ \\delta}$ and La$_{1-x}$R$_{x}$MnO$_{3}$ with R=Ca and Cd, doped ferromagnetic systems with competing interactions: - research on the lattice site and electronic characterisation of the doping element. \\\\ \\\\ b) Studies of self doped La$_{x}$R$_{1-x}$MnO$_{3+\\delta}$ systems, with oxygen and cation non-stoichiometry: -learning the role of defects in the optimisation of magnetoresistive properties. \\\\ \\\\ c) Probing the disorder and quenched random field effects in the vicinity of the charge or orbital Ordered/Ferromagnetic phase...

  9. Light-induced magnetoresistance in solution-processed planar hybrid devices measured under ambient conditions

    Directory of Open Access Journals (Sweden)

    Sreetama Banerjee

    2017-07-01

    Full Text Available We report light-induced negative organic magnetoresistance (OMAR measured in ambient atmosphere in solution-processed 6,13-bis(triisopropylsilylethynylpentacene (TIPS-pentacene planar hybrid devices with two different device architectures. Hybrid electronic devices with trench-isolated electrodes (HED-TIE having a channel length of ca. 100 nm fabricated in this work and, for comparison, commercially available pre-structured organic field-effect transistor (OFET substrates with a channel length of 20 µm were used. The magnitude of the photocurrent as well as the magnetoresistance was found to be higher for the HED-TIE devices because of the much smaller channel length of these devices compared to the OFETs. We attribute the observed light-induced negative magnetoresistance in TIPS-pentacene to the presence of electron–hole pairs under illumination as the magnetoresistive effect scales with the photocurrent. The magnetoresistance effect was found to diminish over time under ambient conditions compared to a freshly prepared sample. We propose that the much faster degradation of the magnetoresistance effect as compared to the photocurrent was due to the incorporation of water molecules in the TIPS-pentacene film.

  10. Magnetoresistance manipulation and sign reversal in Mn-doped ZnO nanowires.

    Science.gov (United States)

    Sapkota, Keshab R; Chen, Weimin; Maloney, F Scott; Poudyal, Uma; Wang, Wenyong

    2016-10-14

    We report magnetoresistance (MR) manipulation and sign reversal induced by carrier concentration modulation in Mn-doped ZnO nanowires. At low temperatures positive magnetoresistance was initially observed. When the carrier concentration was increased through the application of a gate voltage, the magnetoresistance also increased and reached a maximum value. However, further increasing the carrier concentration caused the MR to decrease, and eventually an MR sign reversal from positive to negative was observed. An MR change from a maximum positive value of 25% to a minimum negative value of 7% was observed at 5 K and 50 KOe. The observed MR behavior was modeled by considering combined effects of quantum correction to carrier conductivity and bound magnetic polarons. This work could provide important insights into the mechanisms that govern magnetotransport in dilute magnetic oxides, and it also demonstrated an effective approach to manipulating magnetoresistance in these materials that have important spintronic applications.

  11. Anisotropic hydrodynamics: Motivation and methodology

    Energy Technology Data Exchange (ETDEWEB)

    Strickland, Michael

    2014-06-15

    In this proceedings contribution I review recent progress in our understanding of the bulk dynamics of relativistic systems that possess potentially large local rest frame momentum-space anisotropies. In order to deal with these momentum-space anisotropies, a reorganization of relativistic viscous hydrodynamics can be made around an anisotropic background, and the resulting dynamical framework has been dubbed “anisotropic hydrodynamics”. I also discuss expectations for the degree of momentum-space anisotropy of the quark–gluon plasma generated in relativistic heavy ion collisions at RHIC and LHC from second-order viscous hydrodynamics, strong-coupling approaches, and weak-coupling approaches.

  12. Significant enhancement of magnetoresistance with the reduction of particle size in nanometer scale

    Science.gov (United States)

    Das, Kalipada; Dasgupta, P.; Poddar, A.; Das, I.

    2016-01-01

    The Physics of materials with large magnetoresistance (MR), defined as the percentage change of electrical resistance with the application of external magnetic field, has been an active field of research for quite some times. In addition to the fundamental interest, large MR has widespread application that includes the field of magnetic field sensor technology. New materials with large MR is interesting. However it is more appealing to vast scientific community if a method describe to achieve many fold enhancement of MR of already known materials. Our study on several manganite samples [La1−xCaxMnO3 (x = 0.52, 0.54, 0.55)] illustrates the method of significant enhancement of MR with the reduction of the particle size in nanometer scale. Our experimentally observed results are explained by considering model consisted of a charge ordered antiferromagnetic core and a shell having short range ferromagnetic correlation between the uncompensated surface spins in nanoscale regime. The ferromagnetic fractions obtained theoretically in the nanoparticles has been shown to be in the good agreement with the experimental results. The method of several orders of magnitude improvement of the magnetoresistive property will have enormous potential for magnetic field sensor technology. PMID:26837285

  13. Field geometry dependence of magnetotransport in epitaxial La2/3Ca1/3MnO3 thin films

    International Nuclear Information System (INIS)

    Saldarriaga, W.; Baca, E.; Prieto, P.; Moran, O.; Grube, K.; Fuchs, D.; Schneider, R.

    2006-01-01

    In-plane and out-of-plane magnetoresistance measurements on epitaxial ∼200nm thin (001)-oriented films of high oxygen pressure DC-sputtering grown manganite La 2/3 Ca 1/3 MnO 3 were carried out. Single crystal (001)-SrTiO 3 substrates were used. The samples featured a Curie temperature T C ∼260K and a magnetic moment μ(T->0K)∼3μ B per Mn atom. Magnetocrystalline anisotropy with the easy axes lying on film plane was evidenced by recording the in-plane and out-of-plane magnetization loops at temperatures, below T C , in magnetic field strengths up to 5T. Evidence for anisotropic magnetotransport in these films was provided by electric measurements in a wide temperature range up to 6T magnetic field strengths applied both perpendicular and parallel to the film plane. In both applied magnetic field geometries, current and magnetic field were maintained perpendicular to each other. Neither low-field magnetoresistance nor large magnetoresistance hysteresis were observed on these samples, suggesting that the tensile strain imposed by the substrate in the first monolayers has partially been released. In addition, by rotating the sample 360 o around an axis parallel to film plane, in magnetic fields >=2T, a quadratic sinusoidal dependence of the magnetoresistance on the polar angle θ was observed. These results can be consistently interpreted using a generalized version of the theory of anisotropic magnetoresistance in transition-metal ferromagnets

  14. Magnetoresistive ceramics. Recent progress: from basic understanding to applications

    Directory of Open Access Journals (Sweden)

    Fontcuberta, J.

    2004-06-01

    Full Text Available Magnetoresistive ceramics, based on half-metallic ferromagnetic oxides have received renewed attention in the last few years because of their possible applications. Here, we review some recent progress on the development of magnetoresistive ceramic materials such as La2/3Sr1/ 3MnO3 and Sr2FeMoO6 ceramic materials. We shall revisit their basic properties, the strategies that have been employed to understand and to improve their intrinsic properties, pushing the limits of their operation at temperatures well above room-temperature, and the development of some applications. This effort has required the contribution of a number of actors. Starting from research laboratories, it has progressively involved industries that nowadays are able to supply high quality raw-materials or to manufacture magnetoresistive components at large scale.

    Las cerámicas magnetorresistivas, basadas en óxidos semi-metálicos ferromagnéticos han recibido una renovada atención en los últimos años debido a sus posibles aplicaciones. Se revisan aquí algunos de los recientes progresos en el desarrollo de materiales cerámicos magnetorresistivos como La2/3Sr1/3MnO3 y Sr2FeMoO6. Se revisitan sus propiedades básicas, las estrategias empleadas para entender y mejorar sus propiedades intrínsecas, llevando sus límites de operación a temperaturas muy por encima de temperatura ambiente, y el desarrollo de algunas aplicaciones. Este esfuerzo ha requerido al contribución de un gran número de actores. Comenzando por laboratorios de investigación, se ha implicado progresivamente a industrias que hoy en día están capacitadas para suministrar materias primas de alta calidad o para fabricar componentes magnetorresistivos a gran escala.

  15. Sign change of magnetoresistance in Gd-doped amorphous carbon granular films.

    Science.gov (United States)

    Ding, Shihao; Jin, Chao; Fan, Ziwei; Li, Peng; Bai, Haili

    2015-11-11

    Gd/C granular films with 11% Gd were fabricated by facing-target magnetron sputtering at room temperature and then annealed at 300-650 °C for 1.5 h. A magnetoresistance of -82% was obtained in the Gd/C films annealed at 650 °C at 3 K under a magnetic field of 50 kOe. A sign change of the magnetoresistance from negative to positive and then back to negative was observed in all samples as the temperature decreases. Grain boundary scattering effects, wave-function-shrinkage, cotunneling and Gd-Gd interactions account for the mechanisms of the magnetoresistance effects in different temperature regions. The sign of the magnetoresistance also varies as the magnetic field increases. At the transition temperature of 25 K, the wave-function-shrinkage effect competes with cotunneling and Gd-Gd interactions at different magnetic fields. The competition between the wave-function-shrinkage effect and the grain boundary scattering effect is approximately at the transition temperature of 100 K. The temperature range of positive magnetoresistance expands and transition temperatures are changed as the annealing temperature increases. It is related to the expansion of the temperature region for the wave-function-shrinkage effect which occurs in the Mott variable range hopping conduction mechanism.

  16. Large positive spin polarization and giant inverse tunneling magnetoresistance in Fe/PbTiO3/Fe multiferroic tunnel junction

    International Nuclear Information System (INIS)

    Dai, Jian-Qing; Zhang, Hu; Song, Yu-Min

    2014-01-01

    We perform first-principles electronic structure and spin-dependent transport calculations of a multiferroic tunnel junction (MFTJ) with an epitaxial Fe/PbTiO 3 /Fe heterostructure. We predict a large positive spin-polarization (SP) and an intriguing giant inverse tunneling magnetoresistance (TMR) ratio in this tunnel junction. We demonstrate that the tunneling properties are determined by ferroelectric (FE) polarization screening and electronic reconstruction at the interface with lower electrostatic potential. The intricate complex band structure of PbTiO 3 , in particular the lowest decay rates concerning Pb 6p z and Ti 3d z2 states near the Γ ¯ point, gives rise to the large positive SP of the tunneling current in the parallel magnetic configuration. However, the giant inverse TMR ratio is attributed to the minority-spin electrons of the interfacial Ti 3d xz +3d yz orbitals which have considerably weight in the extended area around the Γ ¯ point at the Fermi energy and causes remarkable contributions to the conductance in the antiparallel magnetic configuration. - Highlights: • We study spin-dependent tunneling in Fe/PbTiO 3 /Fe multiferroic tunnel junction. • We find a large positive spin polarization in the parallel magnetic configuration. • An intriguing giant inverse TMR ratio (about −2000%) is predicted. • Complex band structure of PbTiO 3 causes the large positive spin polarization. • Negative TMR is due to minority-spin electrons of interfacial Ti d xz +d yz orbitals

  17. The tunneling magnetoresistance current dependence on cross sectional area, angle and temperature

    Directory of Open Access Journals (Sweden)

    Z. H. Zhang

    2015-03-01

    Full Text Available The magnetoresistance of a MgO-based magnetic tunnel junction (MTJ was studied experimentally. The magnetoresistance as a function of current was measured systematically on MTJs for various MgO cross sectional areas and at various temperatures from 7.5 to 290.1 K. The resistance current dependence of the MTJ was also measured for different angles between the two ferromagnetic layers. By considering particle and angular momentum conservation of transport electrons, the current dependence of magnetoresistance can be explained by the changing of spin polarization in the free magnetic layer of the MTJ. The changing of spin polarization is related to the magnetoresistance, its angular dependence and the threshold current where TMR ratio equals zero. A phenomenological model is used which avoid the complicated barrier details and also describes the data.

  18. Magnetoresistivity and microstructure of YBa2Cu3Oy prepared using planetary ball milling

    International Nuclear Information System (INIS)

    Hamrita, A.; Ben Azzouz, F.; Madani, A.; Ben Salem, M.

    2012-01-01

    Superconducting properties of YBa 2 Cu 3 O y prepared using planetary ball milling were studied. Y-deficient YBa 2 Cu 3 O y nanoparticles are embedded in the superconducting matrix. Ball milled sample exhibits a large magnetoresistivity in weak magnetic fields at 77 K. We have studied the microstructure and the magnetoresistivity of polycrystalline YBa 2 Cu 3 O y (YBCO or Y-123 for brevity) embedded with nanoparticles of Y-deficient YBCO, generated by the planetary ball milling technique. Bulk samples were synthesized from a precursor YBCO powder, which was prepared from commercial high purity Y 2 O 3 , Ba 2 CO 3 and CuO via a one-step annealing process in air at 950 °C. After planetary ball milling of the precursor, the powder was uniaxially pressed and subsequently annealed at 950 °C in air. Phase analysis by X-ray diffraction (XRD), granular structure examination by scanning electron microscopy (SEM), microstructure investigation by transmission electron microscopy (TEM) coupled with energy dispersive X-ray spectroscopy (EDXS) were carried out. TEM analyses show that nanoparticles of Y-deficient YBCO, generated by ball milling, are embedded in the superconducting matrix. Electrical resistance as a function of temperature, ρ(T), revealed that the zero resistance temperature, T co , is 84.5 and 90 K for the milled and unmilled samples respectively. The milled ceramics exhibit a large magnetoresistance in weak magnetic fields at liquid nitrogen temperature. This attractive effect is of high significance as it makes these materials promising candidates for practical application in magnetic field sensor devices.

  19. Tunneling magnetoresistance in junctions composed of ferromagnets and time-reversal invariant topological superconductors

    International Nuclear Information System (INIS)

    Yan, Zhongbo; Wan, Shaolong

    2016-01-01

    Tunneling magnetoresistance between two ferrromagnets is an issue of fundamental importance in spintronics. In this work, we show that tunneling magnetoresistance can also emerge in junctions composed of ferromagnets and time-reversal invariant topological superconductors without spin-rotation symmetry. Here the physical origin is that when the spin-polarization direction of an injected electron from the ferromagnet lies in the same plane of the spin-polarization direction of Majorana zero modes, the electron will undergo a perfect spin-equal Andreev reflection, while injected electrons with other spin-polarization directions will be partially Andreev reflected and partially normal reflected, which consequently has a lower conductance, and therefore, the magnetoresistance effect emerges. Compared to conventional magnetic tunnel junctions, an unprecedented advantage of the junctions studied here is that arbitrary high tunneling magnetoresistance can be obtained even when the magnetization of the ferromagnets are weak and the insulating tunneling barriers are featureless. Our findings provide a new fascinating mechanism to obtain high tunneling magnetoresistance. (paper)

  20. Giant Hall Resistivity and Magnetoresistance in Cubic Chiral Antiferromagnet EuPtSi

    Science.gov (United States)

    Kakihana, Masashi; Aoki, Dai; Nakamura, Ai; Honda, Fuminori; Nakashima, Miho; Amako, Yasushi; Nakamura, Shota; Sakakibara, Toshiro; Hedo, Masato; Nakama, Takao; Ōnuki, Yoshichika

    2018-02-01

    EuPtSi crystallizes in the cubic chiral structure (P213, No. 198), which is the same as the non-centrosymmetric space group of MnSi with the skyrmion structure, and orders antiferromagnetically below a Néel temperature TN = 4.05 K. The magnetization at 2 K for the [111] direction indicates two metamagnetic transitions at the magnetic fields HA1 = 9.2 kOe and HA2 = 13.8 kOe and saturates above Hc = 26.6 kOe. The present magnetic phase between HA1 and HA2 is most likely closed in the (H,T) phase and is observed in a wide temperature range from 3.6 to 0.5 K. In this magnetic phase known as the A-phase, we found giant additional Hall resistivity ΔρH(H) and magnetoresistance Δρ(H), reaching ΔρH(H) = 0.12 µΩ·cm and Δρ(H) = 1.4 µΩ·cm, respectively. These findings are obtained for H || [111] and [100], but not for H || [110] and [112], revealing an anisotropic behavior in the new material EuPtSi.

  1. Tuning martensitic transformation, large magnetoresistance and strain in Ni50-xFexMn36Sn14 Heusler alloys

    Science.gov (United States)

    Liao, Pan; Jing, Chao; Zheng, Dong; Li, Zhe; Kang, Baojuan; Deng, Dongmei; Cao, Shixun; Lu, Bo; Zhang, Jincang

    2015-09-01

    We have investigated the martensitic transformation, exchange bias, magnetoresistance (MR) and strain in Ni50-xFexMn36Sn14 (x=1, 2, 3, 4) Heusler alloys. With the increase of Fe content, the austenite phase could be stabilized with L21 structure and hence the martensitic transition shifts to a lower temperature and finally disappears. This behavior can be understood by the weakening of Ni-Mn hybridization to suppress AFM interactions and enhancement of Fe-Fe ferromagnetic exchange interactions. The same reason can account for the slight decrease of exchange bias field (HEB) with the increase of the Fe content from x=1 to 2 and the disappearance of HEB for x=3. We observed MR effect for x=3, and a maximum MR value of -52% was achieved, which can be explained by the change in the electronic structure during martensitic transformation induced by the magnetic field. In addition, a large strain of 0.207% in Ni49Fe1Mn36Sn14 was observed due to the changes of lattice parameters during the martensitic transformation induced by temperature.

  2. Two-Carrier Transport Induced Hall Anomaly and Large Tunable Magnetoresistance in Dirac Semimetal Cd3As2 Nanoplates.

    Science.gov (United States)

    Li, Cai-Zhen; Li, Jin-Guang; Wang, Li-Xian; Zhang, Liang; Zhang, Jing-Min; Yu, Dapeng; Liao, Zhi-Min

    2016-06-28

    Cd3As2 is a model material of Dirac semimetal with a linear dispersion relation along all three directions in the momentum space. The unique band structure of Cd3As2 is made with both Dirac and topological properties. It can be driven into a Weyl semimetal by symmetry breaking or a topological insulator by enhancing the spin-orbit coupling. Here we report the temperature and gate voltage-dependent magnetotransport properties of Cd3As2 nanoplates with Fermi level near the Dirac point. The Hall anomaly demonstrates the two-carrier transport accompanied by a transition from n-type to p-type conduction with decreasing temperature. The carrier-type transition is explained by considering the temperature-dependent spin-orbit coupling. The magnetoresistance exhibits a large nonsaturating value up to 2000% at high temperatures, which is ascribed to the electron-hole compensation in the system. Our results are valuable for understanding the experimental observations related to the two-carrier transport in Dirac/Weyl semimetals, such as Na3Bi, ZrTe5, TaAs, NbAs, and HfTe5.

  3. Spin Hall magnetoresistance at the interface between platinum and cobalt ferrite thin films with large magnetic anisotropy

    Directory of Open Access Journals (Sweden)

    Takeshi Tainosho

    2017-05-01

    Full Text Available The recently discovered spin Hall magnetoresistance (SMR effect is a useful means to obtain information on the magnetization process at the interface between a nonmagnetic metal and ferromagnetic insulators. We report the SMR measurements at the interface between platinum and cobalt ferrite thin films for samples with two different preferential directions of magnetization (out-of-plane and in-plane. The directional difference of the magnetic easy axis does not seem to influence the value of SMR.

  4. Oxidized Mn:Ge magnetic semiconductor: Observation of anomalous Hall effect and large magnetoresistance

    Science.gov (United States)

    Duc Dung, Dang; Choi, Jiyoun; Feng, Wuwei; Cao Khang, Nguyen; Cho, Sunglae

    2018-03-01

    We report on the structural and magneto-transport properties of the as-grown and oxidized Mn:Ge magnetic semiconductors. Based on X-ray diffraction and X-ray photoelectron spectroscopy results, the samples annealed at 650 and 700 °C became fully oxidized and the chemical binding energies of Mn was found to be Mn3O4. Thus, the system became Mn3O4 clusters embedded in Ge1-yOy. The as-grown sample showed positive linear Hall effect and negligible negative magnetoresistance (MR), which trend remained for the sample annealed up to 550 °C. Interestingly, for the samples annealed at above 650 °C, we observed the anomalous Hall effect around 45 K and the giant positive MR, which are respectively 59.2% and 78.5% at 7 kOe annealed at 650 °C and 700 °C.

  5. Hydrodynamic cavitation in Stokes flow of anisotropic fluids

    OpenAIRE

    Stieger, Tillmann; Agha, Hakam; Schoen, Martin; Mazza, Marco G.; Sengupta, Anupam

    2017-01-01

    Cavitation, the nucleation of vapour in liquids, is ubiquitous in fluid dynamics, and is often implicated in a myriad of industrial and biomedical applications. Although extensively studied in isotropic liquids, corresponding investigations in anisotropic liquids are largely lacking. Here, by combining liquid crystal microfluidic experiments, nonequilibrium molecular dynamics simulations and theoretical arguments, we report flow-induced cavitation in an anisotropic fluid. The cavitation domai...

  6. Lattice strain accompanying the colossal magnetoresistance effect in EuB6.

    Science.gov (United States)

    Manna, Rudra Sekhar; Das, Pintu; de Souza, Mariano; Schnelle, Frank; Lang, Michael; Müller, Jens; von Molnár, Stephan; Fisk, Zachary

    2014-08-08

    The coupling of magnetic and electronic degrees of freedom to the crystal lattice in the ferromagnetic semimetal EuB(6), which exhibits a complex ferromagnetic order and a colossal magnetoresistance effect, is studied by high-resolution thermal expansion and magnetostriction experiments. EuB(6) may be viewed as a model system, where pure magnetism-tuned transport and the response of the crystal lattice can be studied in a comparatively simple environment, i.e., not influenced by strong crystal-electric field effects and Jahn-Teller distortions. We find a very large lattice response, quantified by (i) the magnetic Grüneisen parameter, (ii) the spontaneous strain when entering the ferromagnetic region, and (iii) the magnetostriction in the paramagnetic temperature regime. Our analysis reveals that a significant part of the lattice effects originates in the magnetically driven delocalization of charge carriers, consistent with the scenario of percolating magnetic polarons. A strong effect of the formation and dynamics of local magnetic clusters on the lattice parameters is suggested to be a general feature of colossal magnetoresistance materials.

  7. Large anisotropy in colossal magnetoresistance of charge orbital ordered epitaxial Sm0.5Ca0.5MnO3 films

    DEFF Research Database (Denmark)

    Chen, Yunzhong; Sun, J.R.; Zhao, J.L.

    2009-01-01

    We investigated the structure and magnetotransport properties of Sm0.5Ca0.5MnO3 (SCMO) films epitaxially grown on (011)-oriented SrTiO3 substrates, which exhibited clear charge/orbital ordering transition. A significant anisotropy of ~1000 in the colossal magnetoresistance (CMR) effect was observ...

  8. Anisotropic ray trace

    Science.gov (United States)

    Lam, Wai Sze Tiffany

    Optical components made of anisotropic materials, such as crystal polarizers and crystal waveplates, are widely used in many complex optical system, such as display systems, microlithography, biomedical imaging and many other optical systems, and induce more complex aberrations than optical components made of isotropic materials. The goal of this dissertation is to accurately simulate the performance of optical systems with anisotropic materials using polarization ray trace. This work extends the polarization ray tracing calculus to incorporate ray tracing through anisotropic materials, including uniaxial, biaxial and optically active materials. The 3D polarization ray tracing calculus is an invaluable tool for analyzing polarization properties of an optical system. The 3x3 polarization ray tracing P matrix developed for anisotropic ray trace assists tracking the 3D polarization transformations along a ray path with series of surfaces in an optical system. To better represent the anisotropic light-matter interactions, the definition of the P matrix is generalized to incorporate not only the polarization change at a refraction/reflection interface, but also the induced optical phase accumulation as light propagates through the anisotropic medium. This enables realistic modeling of crystalline polarization elements, such as crystal waveplates and crystal polarizers. The wavefront and polarization aberrations of these anisotropic components are more complex than those of isotropic optical components and can be evaluated from the resultant P matrix for each eigen-wavefront as well as for the overall image. One incident ray refracting or reflecting into an anisotropic medium produces two eigenpolarizations or eigenmodes propagating in different directions. The associated ray parameters of these modes necessary for the anisotropic ray trace are described in Chapter 2. The algorithms to calculate the P matrix from these ray parameters are described in Chapter 3 for

  9. Magnetoresistance stories of double perovskites

    Indian Academy of Sciences (India)

    2015-05-28

    May 28, 2015 ... Tunnelling magnetoresistance (TMR) in polycrystalline double perovskites has been an important research topic for more than a decade now, where the nature of the insulating tunnel barrier is the core issue of debate. Other than the nonmagnetic grain boundaries as conventional tunnel barriers, intragrain ...

  10. Magnetoresistance Probe of Ultrathin Mn5Ge3 Films with Anderson Weak Localization

    International Nuclear Information System (INIS)

    Li-Jun, Chen; De-Yong, Wang; Qing-Feng, Zhan; Wei, He; Qing-An, Li

    2008-01-01

    We present the magnetoresistance measurements of ultrathin Mn 5 Ge 3 films with different thicknesses at low temperatures. Owing to the lattice mismatch between Mn 5 Ge 3 and Ge (111), the thickness of Mn 5 Ge 3 films has a significant effect on the magnetoresistance. When the thickness of Mn is more than 72 monolayers (MLs), the magnetoresistance of the Mn 5 Ge 3 films appears a peak at about 6kOe, which shows that the magnetoresistance results from the Anderson weak localization effect and the variable range hopping in the presence of a magnetic field. The magnetic and semiconducting properties indicate that the Mn 5 Ge 3 film is a potential material for spin injection. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  11. Oscillations in magnetoresistance and interlayer coupling in magnetic sandwich structures

    International Nuclear Information System (INIS)

    Barnas, J.; Bulka, B.

    1997-01-01

    Kubo formalism is used to calculate the magnetoresistance due to magnetization rotation in a structure consisting two magnetic films separated by nonmagnetic layer. In the approximation of an uniform relaxation time of each layer, the oscillatory term in magnetoresistance corresponds to the oscillation period which depends on the potential barriers at the interfaces. This period is longer than the oscillation period observed in the coupling parameter. (author)

  12. Tuning magnetoresistance in molybdenum disulphide and graphene using a molecular spin transition.

    Science.gov (United States)

    Datta, Subhadeep; Cai, Yongqing; Yudhistira, Indra; Zeng, Zebing; Zhang, Yong-Wei; Zhang, Han; Adam, Shaffique; Wu, Jishan; Loh, Kian Ping

    2017-09-22

    Coupling spins of molecular magnets to two-dimensional (2D) materials provides a framework to manipulate the magneto-conductance of 2D materials. However, with most molecules, the spin coupling is usually weak and devices fabricated from these require operation at low temperatures, which prevents practical applications. Here, we demonstrate field-effect transistors based on the coupling of a magnetic molecule quinoidal dithienyl perylenequinodimethane (QDTP) to 2D materials. Uniquely, QDTP switches from a spin-singlet state at low temperature to a spin-triplet state above 370 K, and the spin transition can be electrically transduced by both graphene and molybdenum disulphide. Graphene-QDTP shows hole-doping and a large positive magnetoresistance ( ~ 50%), while molybdenum disulphide-QDTP demonstrates electron-doping and a switch to large negative magnetoresistance ( ~ 100%) above the magnetic transition. Our work shows the promise of spin detection at high temperature by coupling 2D materials and molecular magnets.Engineering a coupling between magnetic molecules and conducting materials at room temperature could help the development of spintronic devices. Loh et al. show that the spin state of QDTP molecules deposited on graphene and MoS 2 couples to their electronic structure, affecting magnetotransport.

  13. An anisotropic elastoplasticity model implemented in FLAG

    Energy Technology Data Exchange (ETDEWEB)

    Buechler, Miles Allen [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Canfield, Thomas R. [Los Alamos National Lab. (LANL), Los Alamos, NM (United States)

    2017-10-12

    Many metals, including Tantalum and Zirconium, exhibit anisotropic elastoplastic behavior at the single crystal level, and if components are manufactured from these metals through forming processes the polycrystal (component) may also exhibit anisotropic elastoplastic behavior. This is because the forming can induce a preferential orientation of the crystals in the polycrystal. One example is a rolled plate of Uranium where the sti /strong orientation of the crystal (c-axis) tends to align itself perpendicular to the rolling direction. If loads are applied to this plate in di erent orientations the sti ness as well as the ow strength of the material will be greater in the through thickness direction than in other directions. To better accommodate simulations of such materials, an anisotropic elastoplasticity model has been implemented in FLAG. The model includes an anisotropic elastic stress model as well as an anisotropic plasticity model. The model could represent single crystals of any symmetry, though it should not be confused with a high- delity crystal plasticity model with multiple slip planes and evolutions. The model is most appropriate for homogenized polycrystalline materials. Elastic rotation of the material due to deformation is captured, so the anisotropic models are appropriate for arbitrary large rotations, but currently they do not account for signi cant change in material texture beyond the elastic rotation of the entire polycrystal.

  14. Spin–orbit coupling induced magnetoresistance oscillation in a dc biased two-dimensional electron system

    International Nuclear Information System (INIS)

    Wang, C M; Lei, X L

    2014-01-01

    We study dc-current effects on the magnetoresistance oscillation in a two-dimensional electron gas with Rashba spin-orbit coupling, using the balance-equation approach to nonlinear magnetotransport. In the weak current limit the magnetoresistance exhibits periodical Shubnikov-de Haas oscillation with changing Rashba coupling strength for a fixed magnetic field. At finite dc bias, the period of the oscillation halves when the interbranch contribution to resistivity dominates. With further increasing current density, the oscillatory resistivity exhibits phase inversion, i.e., magnetoresistivity minima (maxima) invert to maxima (minima) at certain values of the dc bias, which is due to the current-induced magnetoresistance oscillation. (paper)

  15. Observation of large low field magnetoresistance in ramp-edge tunneling junctions based on doped manganite ferromagnetic electrodes and a SrTiO{sub 3} insulator

    Energy Technology Data Exchange (ETDEWEB)

    Kwon, C.; Jia, Q.X.; Fan, Y.; Hundley, M.F.; Reagor, D.W.; Hawley, M.E.; Peterson, D.E.

    1998-07-01

    The authors report the fabrication of ferromagnet-insulator-ferromagnet junction devices using a ramp-edge geometry based on (La{sub 0.7}Sr{sub 0.3})MnO{sub 3} ferromagnetic electrodes and a SrTiO{sub 3} insulator. The multilayer thin films were deposited using pulsed laser deposition and the devices were patterned using photolithography and ion milling. As expected from the spin-dependent tunneling, the junction magnetoresistance depends on the relative orientation of the magnetization in the electrodes. The maximum junction magnetoresistance (JMR) of 30% is observed below 300 Oe at low temperatures (T < 100 K).

  16. Magnetoresistance of tungsten thin wafer at the multichannel surface scattering of conduction electrons

    International Nuclear Information System (INIS)

    Lutsishin, P.P.; Nakhodkin, T.N.

    1982-01-01

    The magnetoresistance of tungsten thin wafer with the (110) surface was studied at the adsorption of tungsten dioxide. The method of low-energy electron diffraction was used to study the symmetry of ordered surface structures. Using the method of the magnetoresistance measurement the character of the scattering of conduction electrons was investigated. THe dependence of magnetoresistance on the surface concentration of tungsten dioxide correlated w1th the structure of the surface layer of atoms, what was explained with allowance for diffraction of conduction electrons at the metal boundary. The magnetoresistance maximum for the (2x2) structure, which characterised decrease in surface conduction under the conditions of static skin effect, was explained by multichannel mirror reflection with the recombinations of electron and ho.le sections of Fermi Surface

  17. Observation of magnetic polarons in the magnetoresistive pyrochlore Lu2V2O7

    International Nuclear Information System (INIS)

    Storchak, Vyacheslav G; Brewer, Jess H; Eshchenko, Dmitry G; Mengyan, Patrick W; Zhou Haidong; Wiebe, Christopher R

    2013-01-01

    Materials that exhibit colossal magnetoresistance (CMR) have attracted much attention due to their potential technological applications. One particularly interesting model for the magnetoresistance of low-carrier-density ferromagnets involves mediation by magnetic polarons (MP)—electrons localized in nanoscale ferromagnetic ‘droplets’ by their exchange interaction. However, MP have not previously been directly detected and their size has been difficult to determine from macroscopic measurements. In order to provide this crucial information, we have carried out muon spin rotation measurements on the magnetoresistive semiconductor Lu 2 V 2 O 7 in the temperature range from 2 to 300 K and in magnetic fields up to 7 T. Magnetic polarons with characteristic radius R ≈ 0.4 nm are detected below about 100 K, where Lu 2 V 2 O 7 exhibits CMR; at higher temperature, where the magnetoresistance vanishes, these MP also disappear. This observation confirms the MP-mediated model of CMR and reveals the microscopic size of the MP in magnetoresistive pyrochlores. (paper)

  18. Colossal Terahertz Magnetoresistance at Room Temperature in Epitaxial La0.7Sr0.3MnO3 Nanocomposites and Single-Phase Thin Films.

    Science.gov (United States)

    Lloyd-Hughes, J; Mosley, C D W; Jones, S P P; Lees, M R; Chen, A; Jia, Q X; Choi, E-M; MacManus-Driscoll, J L

    2017-04-12

    Colossal magnetoresistance (CMR) is demonstrated at terahertz (THz) frequencies by using terahertz time-domain magnetospectroscopy to examine vertically aligned nanocomposites (VANs) and planar thin films of La 0.7 Sr 0.3 MnO 3 . At the Curie temperature (room temperature), the THz conductivity of the VAN was dramatically enhanced by over 2 orders of magnitude under the application of a magnetic field with a non-Drude THz conductivity that increased with frequency. The direct current (dc) CMR of the VAN is controlled by extrinsic magnetotransport mechanisms such as spin-polarized tunneling between nanograins. In contrast, we find that THz CMR is dominated by intrinsic, intragrain transport: the mean free path was smaller than the nanocolumn size, and the planar thin-film exhibited similar THz CMR to the VAN. Surprisingly, the observed colossal THz magnetoresistance suggests that the magnetoresistance can be large for alternating current motion on nanometer length scales, even when the magnetoresistance is negligible on the macroscopic length scales probed by dc transport. This suggests that colossal magnetoresistance at THz frequencies may find use in nanoelectronics and in THz optical components controlled by magnetic fields. The VAN can be scaled in thickness while retaining a high structural quality and offers a larger THz CMR at room temperature than the planar film.

  19. Hydrodynamic cavitation in Stokes flow of anisotropic fluids

    Science.gov (United States)

    Stieger, Tillmann; Agha, Hakam; Schoen, Martin; Mazza, Marco G.; Sengupta, Anupam

    2017-05-01

    Cavitation, the nucleation of vapour in liquids, is ubiquitous in fluid dynamics, and is often implicated in a myriad of industrial and biomedical applications. Although extensively studied in isotropic liquids, corresponding investigations in anisotropic liquids are largely lacking. Here, by combining liquid crystal microfluidic experiments, nonequilibrium molecular dynamics simulations and theoretical arguments, we report flow-induced cavitation in an anisotropic fluid. The cavitation domain nucleates due to sudden pressure drop upon flow past a cylindrical obstacle within a microchannel. For an anisotropic fluid, the inception and growth of the cavitation domain ensued in the Stokes regime, while no cavitation was observed in isotropic liquids flowing under similar hydrodynamic parameters. Using simulations we identify a critical value of the Reynolds number for cavitation inception that scales inversely with the order parameter of the fluid. Strikingly, the critical Reynolds number for anisotropic fluids can be 50% lower than that of isotropic fluids.

  20. Resistance transition assisted geometry enhanced magnetoresistance in semiconductors

    International Nuclear Information System (INIS)

    Luo, Zhaochu; Zhang, Xiaozhong

    2015-01-01

    Magnetoresistance (MR) reported in some non-magnetic semiconductors (particularly silicon) has triggered considerable interest owing to the large magnitude of the effect. Here, we showed that MR in lightly doped n-Si can be significantly enhanced by introducing two diodes and proper design of the carrier path [Wan, Nature 477, 304 (2011)]. We designed a geometrical enhanced magnetoresistance (GEMR) device whose room-temperature MR ratio reaching 30% at 0.065 T and 20 000% at 1.2 T, respectively, approaching the performance of commercial MR devices. The mechanism of this GEMR is: the diodes help to define a high resistive state (HRS) and a low resistive state (LRS) in device by their openness and closeness, respectively. The ratio of apparent resistance between HRS and LRS is determined by geometry of silicon wafer and electrodes. Magnetic field could induce a transition from LRS to HRS by reshaping potential and current distribution among silicon wafer, resulting in a giant enhancement of intrinsic MR. We expect that this GEMR could be also realized in other semiconductors. The combination of high sensitivity to low magnetic fields and large high-field response should make this device concept attractive to the magnetic field sensing industry. Moreover, because this MR device is based on a conventional silicon/semiconductor platform, it should be possible to integrate this MR device with existing silicon/semiconductor devices and so aid the development of silicon/semiconductor-based magnetoelectronics. Also combining MR devices and semiconducting devices in a single Si/semiconductor chip may lead to some novel devices with hybrid function, such as electric-magnetic-photonic properties. Our work demonstrates that the charge property of semiconductor can be used in the magnetic sensing industry, where the spin properties of magnetic materials play a role traditionally

  1. Angular-dependent magnetoresistance study in Ca0.73La0.27FeAs2: a "parent" compound of 112-type iron pnictide superconductors.

    Science.gov (United States)

    Xing, Xiangzhuo; Xu, Chunqiang; Li, Zhanfeng; Feng, Jiajia; Zhou, Nan; Zhang, Yufeng; Sun, Yue; Zhou, Wei; Xu, Xiaofeng; Shi, Zhixiang

    2017-11-21

    We report a study of angular-dependent magnetoresistance (AMR) with the magnetic field rotated in the plane perpendicular to the current on a Ca0.73La0.27FeAs2 single crystal, which is regarded as a "parent" compound of 112-type iron pnictide superconductors. A pronounced AMR with twofold symmetry is observed, signifying the highly anisotropic Fermi surface. By further analyzing the AMR data, we find that the Fermi surface above the structural/antiferromagnetic (AFM) transition (Ts/TN) is quasi-two-dimensional (2D), as revealed by the 2D scaling behavior of the AMR, Δρ/ρ(0) (H, θ)=Δρ/ρ(0) (μ0Hcosθ), θ being the magnetic field angle with respect to the c axis. While such a 2D scaling becomes invalid at temperatures below Ts/TN, the three-dimensional (3D) scaling approach by inclusion of the anisotropy of Fermi surface is efficient, indicating that the appearance of 3D Fermi surface contributed to the anisotropic electronic transport. Compared with other experimental observations, we suspect that the additional 3D hole pocket (generated by the Ca d orbital and As1 pz orbital) around the Γ point in CaFeAs2 will disappear in the heavily electron doped regime, and moreover, the Fermi surface should be reconstructed across the structural/AFM transition. Besides, a quasi-linear in-plane magnetoresistance is observed at low temperatures and its possible origins are also discussed. Our results provide more information to further understand the electronic structure of 112-type IBSs. © 2017 IOP Publishing Ltd.

  2. Crossover of angular dependent magnetoresistance with the metal-insulator transition in colossal magnetoresistive manganite films

    DEFF Research Database (Denmark)

    Chen, Yunzhong; Sun, J.R.; Zhao, T.Y.

    2009-01-01

    The temperature and magnetic field dependence of angular dependent magnetoresistance (AMR) along two orthogonal directions ([100] and [01]) was investigated in a charge-orbital-ordered Sm0.5Ca0.5MnO3 (SCMO) film grown on (011)-oriented SrTiO3 substrates. A dramatic decrease of AMR magnitude in bo...

  3. Dependence on film thickness of grain boundary low-field magnetoresistance in thin films of La0.7Ca0.3MnO3

    International Nuclear Information System (INIS)

    Todd, N. K.; Mathur, N. D.; Blamire, M. G.

    2001-01-01

    The magnetoresistance of grain boundaries in the perovskite manganites is being studied, both in polycrystalline materials, and thin films grown on bicrystal substrates, because of interest in low-field applications. In this article we show that epitaxial films grown on SrTiO 3 bicrystal substrates of 45 degree misorientation show magnetoresistance behavior which is strongly dependent on the thickness of the film. Thin films, e.g., 40 nm, can show a large low-field magnetoresistance at low temperatures, with very sharp switching between distinct high and low resistance states for fields applied in plane and parallel to the boundary. Thicker films show a more complex behavior of resistance as a function of field, and the dependence on the angle between the applied field and the grain boundary is altered. These changes in magnetoresistance behavior are linked to the variation in morphology of the films. Thin films are coherently strained, due to the mismatch with the substrate, and very smooth. Thicker films relax, with the formation of defects, and hence different micromagnetic behavior. [copyright] 2001 American Institute of Physics

  4. Anisotropic mechanical properties and Stone-Wales defects in graphene monolayer: A theoretical study

    International Nuclear Information System (INIS)

    Fan, B.B.; Yang, X.B.; Zhang, R.

    2010-01-01

    We investigate the mechanical properties of graphene monolayer via the density functional theoretical (DFT) method. We find that the strain energies are anisotropic for the graphene under large strain. We attribute the anisotropic feature to the anisotropic sp 2 hybridization in the hexagonal lattice. We further identify that the formation energies of Stone-Wales (SW) defects in the graphene monolayer are determined by the defect concentration and also the direction of applied tensile strain, correlating with the anisotropic feature.

  5. The study of the sample size on the transverse magnetoresistance of bismuth nanowires

    International Nuclear Information System (INIS)

    Zare, M.; Layeghnejad, R.; Sadeghi, E.

    2012-01-01

    The effects of sample size on the galvanomagnetice properties of semimetal nanowires are theoretically investigated. Transverse magnetoresistance (TMR) ratios have been calculated within a Boltzmann Transport Equation (BTE) approach by specular reflection approximation. Temperature and radius dependence of the transverse magnetoresistance of cylindrical Bismuth nanowires are given. The obtained values are in good agreement with the experimental results, reported by Heremans et al. - Highlights: ► In this study effects of sample size on the galvanomagnetic properties of Bi. ► Nanowires were explained by Parrott theorem by solving the Boltzmann Transport Equation. ► Transverse magnetoresistance (TMR) ratios have been measured by specular reflection approximation. ► Temperature and radius dependence of the transverse magnetoresistance of cylindrical Bismuth nanowires are given. ► The obtained values are in good agreement with the experimental results, reported by Heremans et al.

  6. Tuning the magnetoresistance of ultrathin WTe2 sheets by electrostatic gating.

    Science.gov (United States)

    Na, Junhong; Hoyer, Alexander; Schoop, Leslie; Weber, Daniel; Lotsch, Bettina V; Burghard, Marko; Kern, Klaus

    2016-11-10

    The semimetallic, two-dimensional layered transition metal dichalcogenide WTe 2 has raised considerable interest due to its huge, non-saturating magnetoresistance. While for the origin of this effect, a close-to-ideal balance of electrons and holes has been put forward, the carrier concentration dependence of the magnetoresistance remains to be clarified. Here, we present a detailed study of the magnetotransport behaviour of ultrathin, mechanically exfoliated WTe 2 sheets as a function of electrostatic back gating. The carrier concentration and mobility, determined using the two band model and analysis of the Shubnikov-de Haas oscillations, indicate enhanced surface scattering for the thinnest sheets. By the back gate action, the magnetoresistance could be tuned by up to ∼100% for a ∼13 nm-thick WTe 2 sheet.

  7. Resistance and magnetoresistance of annealed amorphous carbon films containing Fe3C nanograins

    International Nuclear Information System (INIS)

    Lee Yuhua; Han Taichun; Wur, C.-S.

    2004-01-01

    The temperature-dependent resistance and the field-dependent magnetoresistance were measured for films annealed at temperatures from 250 deg. C to 550 deg. C for a period of 60 min. Results of temperature-dependent resistance show electrical tunneling conductance in the films annealed at T a =250 deg. C and 350 deg. C only. The largest magnetoresistance ratio (MR) of 23% at temperature T=2 K was observed for T a =350 deg. C. The variations of both the temperature dependence of resistance and the magnetoresistance with the annealing temperature are discussed

  8. Anomalous Anisotropic Magnetoresistance And Magnetization In Mn3.69Bi95.69Fe0.62

    Directory of Open Access Journals (Sweden)

    A. V. Terekhov

    2017-12-01

    Full Text Available It was found that the Mn3.69Bi95.69Fe0.62 consists of two phases, namely of a bismuth matrix and BiMn inclusions. It is shown that the samples have a crystalline texture. Independently on the applied field orientation, maximum on the temperature dependence of magnetization is detected at Tmax ≈ 85 K, which is associated with the reorientation transition of the magnetic moments of Mn for αBiMn phase. In turn, the electrical resistivity ρ(T also demonstrates maximum at Tmax ≈58 K in a magnetic field of 800 kA/m when H⊥I. It is established that the maximum of ρ(T increases and is shifted toward higher temperature Tmax≈94 K when field increasing up to 2400 kA/m. At the same time no clear maximum on ρ(T is observed for H||I. It is shown that the relative magnetoresistance, Δρ/ρ0, is increased both with decreasing temperature and with increase of the magnetic field. The measured enhancement reaches Δρ/ρ0≈250% for H||I and Δρ/ρ0≈2400% for H⊥I in magnetic field of 2400 kA/m. Thus, the strong anisotropy of ρ(T and Δρ/ρ0(T is established both for H⊥I and H||I. Possible explanation of observed anomalous behavior of the temperature dependences of the electrical resistivity in magnetic fields has been proposed.

  9. Large magnetoresistance and Hall effect in paramagnetic black phosphorus synthesized from red phosphorus

    Science.gov (United States)

    Jiang, X. H.; Xiong, F.; Zhang, X. W.; Hua, Z. H.; Wang, Z. H.; Yang, S. G.

    2018-05-01

    Black phosphorus (BP) is an important material, which can be used in the fabrication of phosphorene. In this manuscript, a systematic study was described on the high-pressure synthesis of BP from red phosphorus. For physical characterization, the bulk BP was synthesized under the high pressure of 1.6 GPa and high temperature of 700 °C for 2 h. X-ray diffraction and Raman studies illustrated the formation of high-quality pure phase pleomorphic BP. A nonlinear Hall effect was observed in the BP sample. Magnetoresistance (MR) in the bulk BP reached 90% at 40 K, and positive-to-negative crossover in MR was measured. A paramagnetic feature was found in the prepared bulk BP, and the MR results were attributed to the combination of the effect of classical resistor network and magnetic polaron. The conduction tensors were analyzed by a two-band model to determine the carrier concentration and mobility at several temperatures.

  10. Negative and positive magnetoresistance in bilayer graphene: Effects of weak localization and charge inhomogeneity

    International Nuclear Information System (INIS)

    Chen Yungfu; Bae, Myung-Ho; Chialvo, Cesar; Dirks, Travis; Bezryadin, Alexey; Mason, Nadya

    2011-01-01

    We report measurements of magnetoresistance in bilayer graphene as a function of gate voltage (carrier density) and temperature. We examine multiple contributions to the magnetoresistance, including those of weak localization (WL), universal conductance fluctuations (UCF), and inhomogeneous charge transport. A clear WL signal is evident at all measured gate voltages (in the hole doped regime) and temperature ranges (from 0.25 to 4.3 K), and the phase coherence length extracted from the WL data does not saturate at low temperatures. The WL data is fit to demonstrate that the electron-electron Nyquist scattering is the major source of phase decoherence. A decrease in UCF amplitude with increase in gate voltage and temperature is shown to be consistent with a corresponding decrease in the phase coherence length. In addition, a weak positive magnetoresistance at higher magnetic fields is observed, and attributed to inhomogeneous charge transport. -- Research highlights: → Weak localization theory describes low-field magnetoresistance in bilayer graphene. → Electron-electron Nyquist scattering limits phase coherence in bilayer graphene. → Positive magnetoresistance reveals charge inhomogeneity in bilayer graphene.

  11. Anomalies of magnetoresistance of compounds with atomic clusters RB12 (R = Ho, Er, Tm, Lu)

    International Nuclear Information System (INIS)

    Sluchanko, N. E.; Bogach, A. V.; Glushkov, V. V.; Demishev, S. V.; Samarin, N. A.; Sluchanko, D. N.; Dukhnenko, A. V.; Levchenko, A. V.

    2009-01-01

    The magnetoresistance and magnetization of single-crystal samples of rare-earth dodecaborides RB 12 (R = Ho, Er, Tm, Lu) have been measured at low temperatures (1.8-35 K) in a magnetic field of up to 70 kOe. The effect of positive magnetoresistance that obeys the Kohler's rule Δρ/ρ = f(ρ(0, 300 K)H/ρ(0, T)) is observed for the nonmagnetic metal LuB 12 . In the magnetic dodecaborides HoB 12 , ErB 12 , and TmB 12 , three characteristic regimes of the magnetoresistance behavior have been revealed: the positive magnetoresistance effect similar to the case of LuB 12 is observed at T > 25 K; in the range T N ≤ T ≤ 15 K, the magnetoresistance becomes negative and depends quadratically on the external magnetic field; and, finally, upon the transition to the antiferromagnetic phase (T N ), the positive magnetoresistance is again observed and its amplitude reaches 150% for HoB 12 . It has been shown that the observed anomalies of negative magnetoresistance in the paramagnetic phase can be explained within the Yosida model of conduction electron scattering by localized magnetic moments. The performed analysis confirms the formation of spin-polaron states in the 5d band in the vicinity of rare-earth ions in paramagnetic and magnetically ordered phases of RB 12 and makes it possible to reveal a number of specific features in the transformation of the magnetic structure of the compounds under investigation

  12. Enhanced magnetoresistance in La0.7Ca0.3Mn03/Nd0.7Ca0.3Mn03 epitaxial multilayers

    International Nuclear Information System (INIS)

    Sharma, Himanshu; Khan, Md. S.; Tomy, C.V.; Jain, Sourabh; Tulapurkar, Ashwin

    2014-01-01

    Magnanite multilayers of La 0.7 Ca 0.3 MnO 3 /Nd 0.7 Ca 0.5 MnO 3 have been fabricated on SrTiO 3 (100) substrate using Nd 0.7 Ca 0.5 MnO 3 as the spacer layers. An enhanced magnetoresistance (MR) of more than 80% is observed in the multilayers compared with LCMO thin film (∼50%). Result suggests that the interface strains between LCMO and NCMO layers may have influences on the transport properties and a suitable film structure could be used to increase the large low field magnetoresistance. (author)

  13. Wheatstone bridge giant-magnetoresistance based cell counter.

    Science.gov (United States)

    Lee, Chiun-Peng; Lai, Mei-Feng; Huang, Hao-Ting; Lin, Chi-Wen; Wei, Zung-Hang

    2014-07-15

    A Wheatstone bridge giant magnetoresistance (GMR) biosensor was proposed here for the detection and counting of magnetic cells. The biosensor was made of a top-pinned spin-valve layer structure, and it was integrated with a microchannel possessing the function of hydrodynamic focusing that allowed the cells to flow in series one by one and ensured the accuracy of detection. Through measuring the magnetoresistance variation caused by the stray field of the magnetic cells that flowed through the microchannel above the GMR biosensor, we can not only detect and count the cells but we can also recognize cells with different magnetic moments. In addition, a magnetic field gradient was applied for the separation of different cells into different channels. Copyright © 2014 Elsevier B.V. All rights reserved.

  14. Domain wall magnetoresistance in nanowires: Dependence on geometrical factors and material parameters

    International Nuclear Information System (INIS)

    Allende, S.; Retamal, J.C.; Altbir, D.; D'Albuquerque e Castro, J.

    2014-01-01

    The magnetoresistance associated with the presence of domain walls in metallic nanowires is investigated as a function of geometrical parameters, corresponding to the wall thickness and the nanowire width, as well as of material parameters, such as the band filling and the exchange interaction. Transport across the structure is described within Landauer formalism. Both cases of saturated and non-saturated ferromagnets are considered, and in all of them the contributions from spin-flip and non-spin-flip are separately analyzed. It has been found that for certain range of parameters deviations in the normalized magnetoresistance as high as 20% may be achieved. In addition, it has been shown that the spin-flip process is dependent on the wall thickness. - Highlights: • We identify thickness regions within which transport across the wall is dominated by either spin-flip or non-spin-flip process. • We analyze the dependence of the magnetoresistance on both the material's band filling and strength of the exchange interaction. • We identify parameter ranges within which magnetoresistance ratios as high as 20% or even more might be achieved

  15. Roll Attitude Determination of Spin Projectile Based on GPS and Magnetoresistive Sensor

    Directory of Open Access Journals (Sweden)

    Dandan Yuan

    2017-01-01

    Full Text Available Improvement in attack accuracy of the spin projectiles is a very significant objective, which increases the overall combat efficiency of projectiles. The accurate determination of the projectile roll attitude is the recent objective of the efficient guidance and control. The roll measurement system for the spin projectile is commonly based on the magnetoresistive sensor. It is well known that the magnetoresistive sensor produces a sinusoidally oscillating signal whose frequency slowly decays with time, besides the possibility of blind spot. On the other hand, absolute sensors such as GPS have fixed errors even though the update rates are generally low. To earn the benefit while eliminating weaknesses from both types of sensors, a mathematical model using filtering technique can be designed to integrate the magnetoresistive sensor and GPS measurements. In this paper, a mathematical model is developed to integrate the magnetoresistive sensor and GPS measurements in order to get an accurate prediction of projectile roll attitude in a real flight time. The proposed model is verified using numerical simulations, which illustrated that the accuracy of the roll attitude measurement is improved.

  16. Domain wall magnetoresistance in nanowires: Dependence on geometrical factors and material parameters

    Energy Technology Data Exchange (ETDEWEB)

    Allende, S.; Retamal, J.C. [Departamento de Física, CEDENNA, Universidad de Santiago de Chile, USACH, Avenida Ecuador 3493, 917-0124 Santiago (Chile); Altbir, D., E-mail: dora.altbir@usach.cl [Departamento de Física, CEDENNA, Universidad de Santiago de Chile, USACH, Avenida Ecuador 3493, 917-0124 Santiago (Chile); D' Albuquerque e Castro, J. [Instituto de Física, Universidade Federal do Rio de Janeiro, Caixa Postal 68528, Rio de Janeiro 21941-972 (Brazil)

    2014-04-15

    The magnetoresistance associated with the presence of domain walls in metallic nanowires is investigated as a function of geometrical parameters, corresponding to the wall thickness and the nanowire width, as well as of material parameters, such as the band filling and the exchange interaction. Transport across the structure is described within Landauer formalism. Both cases of saturated and non-saturated ferromagnets are considered, and in all of them the contributions from spin-flip and non-spin-flip are separately analyzed. It has been found that for certain range of parameters deviations in the normalized magnetoresistance as high as 20% may be achieved. In addition, it has been shown that the spin-flip process is dependent on the wall thickness. - Highlights: • We identify thickness regions within which transport across the wall is dominated by either spin-flip or non-spin-flip process. • We analyze the dependence of the magnetoresistance on both the material's band filling and strength of the exchange interaction. • We identify parameter ranges within which magnetoresistance ratios as high as 20% or even more might be achieved.

  17. Voltage-induced switching with magnetoresistance signature in magnetic nano-filaments

    International Nuclear Information System (INIS)

    Sokolov, A; Sabirianov, I; Sabirianov, R; Doudin, B

    2009-01-01

    Large hysteretic resistance changes are reported on sub-100 nm diameter metallic nanowires including thin dielectric junctions. Bi-stable 50% switching in a double junction geometry is modeled in terms of an occupation-driven metal-insulator transition in one of the two junctions, using the generalized Poisson expressions of Oka and Nagaosa (2005 Phys. Rev. Lett. 95 266403). It illustrates how a band bending scheme can be generalized for strongly correlated electron systems. The magnetic constituents of the nanowires provide a magnetoresistive signature of the two resistance states, confirming our model and enabling a four states device application.

  18. Magnetoresistance effect in perovskite-like RCu3Mn4O12 (R - rare earth ion, Th)

    International Nuclear Information System (INIS)

    Lobanovskij, L.S.; Troyanchuk, I.O.; Trukhanov, S.V.; Pastushonok, S.N.; Pavlov, V.I.

    2003-01-01

    The study on the electric properties and magnetoresistance effect in the RCu 3 Mn 4 O 12 (where R is the rare-earth ion, Th) is carried out. It is established that all the compositions of the given series demonstrate the magnetoresistive effect, the value whereof at the liquid nitrogen temperature reaches 20% in the field 0.9 T. The increase in the magnetoresistance with the temperature decrease and high sensitivity to the weak magnetic fields at low temperatures indicate that this effect is intergranular. The peak of the magnetoresistance is identified near the Curie temperature (T C ). It is supposed that the degree of the magnetoresistance near the temperature of the magnetic ordering depends on the conditions of the samples synthesis and the effect of the intergranular interlayer on the transport properties of these compositions [ru

  19. Tunneling magnetoresistance from a symmetry filtering effect

    International Nuclear Information System (INIS)

    Butler, William H

    2008-01-01

    This paper provides a brief overview of the young, but rapidly growing field of spintronics. Its primary objective is to explain how as electrons tunnel through simple insulators such as MgO, wavefunctions of certain symmetries are preferentially transmitted. This symmetry filtering property can be converted into a spin-filtering property if the insulator is joined epitaxially to a ferromagnetic electrode with the same two-dimensional symmetry parallel to the interface. A second requirement of the ferromagnetic electrodes is that a wavefunction with the preferred symmetry exists in one of the two spin channels but not in the other. These requirements are satisfied for electrons traveling perpendicular to the interface for Fe-MgO-Fe tunnel barriers. This leads to a large change in the resistance when the magnetic moment of one of the electrodes is rotated relative to those of the other electrode. This large tunneling magnetoresistance effect is being used as the read sensor in hard drives and may form the basis for a new type of magnetic memory. (topical review)

  20. Oscillating Magnetoresistance in Graphene p-n Junctions at Intermediate Magnetic Fields.

    Science.gov (United States)

    Overweg, Hiske; Eggimann, Hannah; Liu, Ming-Hao; Varlet, Anastasia; Eich, Marius; Simonet, Pauline; Lee, Yongjin; Watanabe, Kenji; Taniguchi, Takashi; Richter, Klaus; Fal'ko, Vladimir I; Ensslin, Klaus; Ihn, Thomas

    2017-05-10

    We report on the observation of magnetoresistance oscillations in graphene p-n junctions. The oscillations have been observed for six samples, consisting of single-layer and bilayer graphene, and persist up to temperatures of 30 K, where standard Shubnikov-de Haas oscillations are no longer discernible. The oscillatory magnetoresistance can be reproduced by tight-binding simulations. We attribute this phenomenon to the modulated densities of states in the n- and p-regions.

  1. Two-dimensional salt and temperature DNA denaturation analysis using a magnetoresistive sensor

    DEFF Research Database (Denmark)

    Rizzi, Giovanni; Dufva, Martin; Hansen, Mikkel Fougt

    2017-01-01

    We present a microfluidic system and its use to measure DNA denaturation curves by varying the temperature or salt (Na+) concentration. The readout is based on real-time measurements of DNA hybridization using magnetoresistive sensors and magnetic nanoparticles (MNPs) as labels. We report the first...... melting curves of DNA hybrids measured as a function of continuously decreasing salt concentration at fixed temperature and compare them to the corresponding curves obtained vs. temperature at fixed salt concentration. The magnetoresistive sensor platform provided reliable results under varying....... The results demonstrate that concentration melting provides an attractive alternative to temperature melting in on-chip DNA denaturation experiments and further show that the magnetoresistive platform is attractive due to its low cross-sensitivity to temperature and liquid composition....

  2. Charge Ordering, Competing Magnetic Interactions, and Magneto-Resistance Effects in Layered Iron(IV)-Based Oxides

    International Nuclear Information System (INIS)

    Adler, P.; Ghosh, S.

    2002-01-01

    Iron(IV)-based Ruddlesden-Popper-type oxides Sr 3 Fe 2-x Co x O 7-y (0≤x≤1) have been synthesized and studied by various techniques. It is shown that iron-57 Moessbauer spectroscopy is a powerful tool for elucidating the intimate correlations between chemical composition, electron-transport properties, electronic state, magnetism, and the large magneto-resistance effects in this system.

  3. Peculiarities of magnetoresistance in InSb whiskers at cryogenic temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Druzhinin, A., E-mail: druzh@polynet.lviv.ua [Lviv Polytechnic National University, Bandera Str., 12, 79013 Lviv (Ukraine); International Laboratory of High Magnetic Fields and Low Temperatures, Gajowicka 95, Wroclaw (Poland); Ostrovskii, I.; Khoverko, Yu. [Lviv Polytechnic National University, Bandera Str., 12, 79013 Lviv (Ukraine); International Laboratory of High Magnetic Fields and Low Temperatures, Gajowicka 95, Wroclaw (Poland); Liakh-Kaguy, N.; Khytruk, I. [Lviv Polytechnic National University, Bandera Str., 12, 79013 Lviv (Ukraine); Rogacki, K. [International Laboratory of High Magnetic Fields and Low Temperatures, Gajowicka 95, Wroclaw (Poland)

    2015-12-15

    Highlights: • Magnetoresistance in InSb whiskers with impurity concentration near MIT is studied. • SdH oscillations of transverse and longitudinal magnetoresistance are examined. • Mechanisms of electron scattering are determined • Main crystal parameters of InSb whiskers are determined. - Abstract: The study of the magnetoresistance in InSb whiskers with an impurity concentration in the vicinity to the metal-insulator phase transition, at low temperature range 4.2–77 K, and in fields, with induction up to 14 T, was conducted. The presence of Shubnikov-de Haas oscillations in both transverse and longitudinal magnetoresistance was observed. The following parameters of InSb whiskers were defined: period of oscillations 0.1 T{sup −1}, cyclotron effective mass of electrons m{sub c} ≈ 0.14m{sub o,} concentration of charge carriers 2.3 × 10{sup 17} cm{sup −3}, g-factor g{sup *} ≈ 30 and Dingle temperature T{sub D} = 14.5 K. To determine the nature of crystal defects, the electron scattering processes on the short-range potential, caused by interaction with polar and nonpolar optical phonons, piezoelectric and acoustic phonons, static strain centers and ionized impurities in n-InSb whiskers, with defect concentration 2.9 × 10{sup 17} cm{sup −3}, are considered. The temperature dependences of electron mobility in the range 4.2–500 K were calculated.

  4. Magnetoresistance anomalies in ultra-thin granular YBa2Cu3O7−δ bridges

    International Nuclear Information System (INIS)

    Levi, D.; Shaulov, A.; Koren, G.; Yeshurun, Y.

    2013-01-01

    Highlights: •Negative magnetoresistance slope in the Tesla regime is observed at low temperatures. •Phase slips explains the observed magnetoresistance at high temperatures. •Quasiparticles tunneling explains the negative slope. -- Abstract: We report on magnetoresistance measurements in 10 nm thick and submicron-wide granular YBa 2 Cu 3 O 7−δ bridges. The results show a strong dependence of the resistance on the magnetic field at low fields crossing over to a relatively weak field dependence at high fields. The field derivative of the resistance at high fields decreases as the temperature is lowered and eventually changes sign, exhibiting a negative slope in a wide field range in the Tesla regime. This negative slope is sensitive to the bias current, turning to be positive as the bias current increases. This complex magnetoresistance behavior is attributed to both phase slips in a distribution of strongly and weakly linked superconducting grains, and tunneling of quasiparticles between grains. The latter dominates at low temperatures and high fields, giving rise to the negative magnetoresistance slope

  5. Tunnel magnetoresistance in double spin filter junctions

    International Nuclear Information System (INIS)

    Saffarzadeh, Alireza

    2003-01-01

    We consider a new type of magnetic tunnel junction, which consists of two ferromagnetic tunnel barriers acting as spin filters (SFs), separated by a nonmagnetic metal (NM) layer. Using the transfer matrix method and the free-electron approximation, the dependence of the tunnel magnetoresistance (TMR) on the thickness of the central NM layer, bias voltage and temperature in the double SF junction are studied theoretically. It is shown that the TMR and electron-spin polarization in this structure can reach very large values under suitable conditions. The highest value of the TMR can reach 99%. By an appropriate choice of the thickness of the central NM layer, the degree of spin polarization in this structure will be higher than that of the single SF junctions. These results may be useful in designing future spin-polarized tunnelling devices

  6. Magnetoresistance of samarium in the 4.2-300 K range

    International Nuclear Information System (INIS)

    Trubitsyn, V.A.; Shalashov, V.F.

    1980-01-01

    Electric conductivity, transverse and longitudinal magnetoresistance of polycrystalline samarium with the purity of 99.9% in the 4.2-300 K temperature range and in magnetic fields up to 50 ke, are measured. The constituent of specific electric conductivity caused by spin disorder is 30.7 μOhmxcm, m*/m=2.6, the exchange parameter is G=3.1 eVxA 3 . Both transverse and longitudinal magnetoresistance are positive at 4.2 K; and the increase of temperature reveals a number of anomalies, evidently conditioned by the alteration of samarium magnetic structure

  7. Thin-film magnetoresistive absolute position detector

    NARCIS (Netherlands)

    Groenland, J.P.J.

    1990-01-01

    The subject of this thesis is the investigation of a digital absolute posi- tion-detection system, which is based on a position-information carrier (i.e. a magnetic tape) with one single code track on the one hand, and an array of magnetoresistive sensors for the detection of the information on the

  8. Detection of magnetic resonance signals using a magnetoresistive sensor

    Science.gov (United States)

    Budker, Dmitry; Pines, Alexander; Xu, Shoujun; Hilty, Christian; Ledbetter, Micah P; Bouchard, Louis S

    2013-10-01

    A method and apparatus are described wherein a micro sample of a fluidic material may be assayed without sample contamination using NMR techniques, in combination with magnetoresistive sensors. The fluidic material to be assayed is first subject to pre-polarization, in one embodiment, by passage through a magnetic field. The magnetization of the fluidic material is then subject to an encoding process, in one embodiment an rf-induced inversion by passage through an adiabatic fast-passage module. Thereafter, the changes in magnetization are detected by a pair of solid-state magnetoresistive sensors arranged in gradiometer mode. Miniaturization is afforded by the close spacing of the various modules.

  9. Magnetoresistance of microstructured permalloy ellipses having multi-domain configurations

    International Nuclear Information System (INIS)

    Kuo, C.Y.; Chung, W.S.; Wu, J.C.; Horng, Lance; Wei, Z.-H.; Lai, M.-F.; Chang, C.-R.

    2007-01-01

    Mirostructured permalloy ellipses having purposely designed multi-domain configurations were investigated. The samples were fabricated using e-beam lithography through a lift-off process. The magnetoresistance measurements were carried out with a constant dc sensing current under the external magnetic field applied along the short axis. The magnetoresistance curves manifest characteristic features in accordance with the specific domain configurations. Step-like/kink features were observed on the ellipses with cross-tie wall/two-vortex configuration and step-like plus kink magnetorsistance curve was found on the ellipse with cross-tie wall combining with two-vortex structure. A magnetic force microscopy and a micromagnetic simulation were employed to support these results

  10. Anomalous rf magnetoresistance in copper at 4/degree/K

    International Nuclear Information System (INIS)

    Halama, H.J.; Prodell, A.G.; Rogers, J.T.

    1988-03-01

    We have measured the effect of a magnetic field on the surface resistance of polycrystalline Cu at f = 1.2 GHz and at 4.4/degree/K; under these conditions the surface resistance is well into the anomalous skin effect regime but has not reached its limiting value. We find that the transverse and longitudinal magnetoresistance are an order of magnitude smaller than the DC magnetoresistance and depend quadratically on the field. At low fields we observe a decrease in surface resistance with increasing field which can be interpreted as a size effect of the TF surface current. 17 refs., 4 figs., 1 tab

  11. Electrical control of memristance and magnetoresistance in oxide magnetic tunnel junctions

    KAUST Repository

    Zhang, Kun

    2015-01-01

    Electric-field control of magnetic and transport properties of magnetic tunnel junctions has promising applications in spintronics. Here, we experimentally demonstrate a reversible electrical manipulation of memristance, magnetoresistance, and exchange bias in Co/CoO–ZnO/Co magnetic tunnel junctions, which enables the realization of four nonvolatile resistance states. Moreover, greatly enhanced tunneling magnetoresistance of 68% was observed due to the enhanced spin polarization of the bottom Co/CoO interface. The ab initio calculations further indicate that the spin polarization of the Co/CoO interface is as high as 73% near the Fermi level and plenty of oxygen vacancies can induce metal–insulator transition of the CoO1−v layer. Thus, the electrical manipulation mechanism on the memristance, magnetoresistance and exchange bias can be attributed to the electric-field-driven migration of oxygen ions/vacancies between very thin CoO and ZnO layers.

  12. Robust giant magnetoresistive effect type multilayer sensor

    NARCIS (Netherlands)

    Lenssen, K.M.H.; Kuiper, A.E.T.; Roozeboom, F.

    2002-01-01

    A robust Giant Magneto Resistive effect type multilayer sensor comprising a free and a pinned ferromagnetic layer, which can withstand high temperatures and strong magnetic fields as required in automotive applications. The GMR multi-layer has an asymmetric magneto-resistive curve and enables

  13. Giant magnetoresistance, three-dimensional Fermi surface and origin of resistivity plateau in YSb semimetal.

    Science.gov (United States)

    Pavlosiuk, Orest; Swatek, Przemysław; Wiśniewski, Piotr

    2016-12-09

    Very strong magnetoresistance and a resistivity plateau impeding low temperature divergence due to insulating bulk are hallmarks of topological insulators and are also present in topological semimetals where the plateau is induced by magnetic field, when time-reversal symmetry (protecting surface states in topological insulators) is broken. Similar features were observed in a simple rock-salt-structure LaSb, leading to a suggestion of the possible non-trivial topology of 2D states in this compound. We show that its sister compound YSb is also characterized by giant magnetoresistance exceeding one thousand percent and low-temperature plateau of resistivity. We thus performed in-depth analysis of YSb Fermi surface by band calculations, magnetoresistance, and Shubnikov-de Haas effect measurements, which reveals only three-dimensional Fermi sheets. Kohler scaling applied to magnetoresistance data accounts very well for its low-temperature upturn behavior. The field-angle-dependent magnetoresistance demonstrates a 3D-scaling yielding effective mass anisotropy perfectly agreeing with electronic structure and quantum oscillations analysis, thus providing further support for 3D-Fermi surface scenario of magnetotransport, without necessity of invoking topologically non-trivial 2D states. We discuss data implying that analogous field-induced properties of LaSb can also be well understood in the framework of 3D multiband model.

  14. Giant magnetoresistive properties of FexAu100-x alloys produced by mechanical alloying

    International Nuclear Information System (INIS)

    Socolovsky, L.M.; Sanchez, F.H.; Shingu, P.H.

    2001-01-01

    The Fe x Au 100- x alloys were produced for the first time by mechanical alloying. Resistance of samples with iron concentrations of x=15, 20, 25, and 30 at% were measured at 77 K under an applied field of 14 kOe. A maximum in magnetoresistive ratio (Δρ/ρ) of 3.5% was obtained for Fe 25 Au 75 . Samples were annealed in order to enhance magnetoresistive properties. These samples exhibit larger ratios, primarily due to the elimination of defects. X-ray diffraction Moessbauer spectroscopy and magnetoresistance measurements were performed, in order to correlate bulk and hyperfine magnetic properties with crystalline structure. X-ray diffractograms show an FCC structure, with no evidence for a BCC one

  15. Transverse magnetoresistance induced by electron-surface scattering on thin gold films: Experiment and theory

    International Nuclear Information System (INIS)

    Oyarzún, Simón; Henríquez, Ricardo; Suárez, Marco Antonio; Moraga, Luis; Kremer, Germán; Munoz, Raúl C.

    2014-01-01

    We report new experimental data regarding the transverse magnetoresistance measured in a family of thin gold films of different thickness with the electric field E oriented perpendicular to the magnetic field B (both fields contained within the plane of the film), as well as a theoretical description of size effects based upon a solution of Boltzmann Transport Equation. The measurements were performed at low temperatures T (4 K ≤ T ≤ 50 K) under magnetic field strengths B (1.5 T ≤ B ≤ 9 T). The magnetoresistance signal can be univocally identified as arising from electron-surface scattering, for the Hall mobility at 4 K depends linearly on film thickness. The magnetoresistance signal exhibits a marked thickness dependence, and its curvature as a function of magnetic field B varies with film thickness. The theoretical description of the magnetic field dependence of the magnetoresistance requires a Hall field that varies with the thickness of the film; this Hall field is tuned to reproduce the experimental data.

  16. Transverse magnetoresistance induced by electron-surface scattering on thin gold films: Experiment and theory

    Energy Technology Data Exchange (ETDEWEB)

    Oyarzún, Simón [Institut Lumière Matière, UMR5306 Université Lyon 1-CNRS, Université de Lyon, 69622 Villeurbanne CEDEX (France); Henríquez, Ricardo [Departamento de Física, Universidad Técnica Federico Santa María, Av. España 1680, Casilla 110-V, Valparaíso (Chile); Suárez, Marco Antonio; Moraga, Luis [Departamento de Física, Facultad de Ciencias Físicas y Matemáticas, Universidad de Chile, Blanco Encalada 2008, Casilla 487-3, Santiago 8370449 (Chile); Kremer, Germán [Bachillerato, Facultad de Ciencias, Universidad de Chile, Las Palmeras 3425, Santiago 7800024 (Chile); Munoz, Raúl C., E-mail: ramunoz@ing.uchile.cl [Departamento de Física, Facultad de Ciencias Físicas y Matemáticas, Universidad de Chile, Blanco Encalada 2008, Casilla 487-3, Santiago 8370449 (Chile)

    2014-01-15

    We report new experimental data regarding the transverse magnetoresistance measured in a family of thin gold films of different thickness with the electric field E oriented perpendicular to the magnetic field B (both fields contained within the plane of the film), as well as a theoretical description of size effects based upon a solution of Boltzmann Transport Equation. The measurements were performed at low temperatures T (4 K ≤ T ≤ 50 K) under magnetic field strengths B (1.5 T ≤ B ≤ 9 T). The magnetoresistance signal can be univocally identified as arising from electron-surface scattering, for the Hall mobility at 4 K depends linearly on film thickness. The magnetoresistance signal exhibits a marked thickness dependence, and its curvature as a function of magnetic field B varies with film thickness. The theoretical description of the magnetic field dependence of the magnetoresistance requires a Hall field that varies with the thickness of the film; this Hall field is tuned to reproduce the experimental data.

  17. Negative magnetoresistance of pitch-based carbon fibers Temperature and pressure dependence

    Science.gov (United States)

    Hambourger, P. D.

    1986-01-01

    The negative transverse magnetoresistance of high-modulus pitch-based carbon fibers has been measured over the temperature range 1.3-4.2 K at ambient pressure and at 4.2 K under hydrostatic pressure up to 16 kbar. At low fields (less than 0.5 torr) the magnitude of the magnetoresistance increases markedly as the temperature is lowered from 4.2 K to 1.3 K, in disagreement with Bright's theoretical model, and decreases with pressure at the rate -0.6 percent/kbar.

  18. Transport properties in amorphous U/sub x/-T1/sub -//sub x/ films (T = Fe, Ni, Gd, Tb, and Yb) (invited)

    International Nuclear Information System (INIS)

    Freitas, P.P.; Plaskett, T.S.; Moreira, J.M.; Amaral, V.S.

    1988-01-01

    We describe the competing magnetic, localization, and phonon effects on the transport properties of amorphous magnetic U/sub x/T/sub 1-//sub x/ films, with T = Fe, Ni, Gd, Tb, and Yb. Amorphous U/sub x/Fe/sub 1-//sub x/ films change from collinear to random ferromagnetism as x increases, and the temperature dependence of the resistivity denotes the competing effects of spin-flip and non-spin-flip exchange scattering processes. The resistivity has a minimum at T/sub f/ rising sharply below this temperature. The sign of the magnetic resistivity and the magnetoresistance indicates >0, while the anisotropic magnetoresistance indicates a local exchange gap. Amorphous U/sub x/Gd/sub 1-//sub x/ and a-U/sub x/Tb/sub 1-//sub x/ are, respectively, spin glasses and random anisotropy dominated systems. The resistivity increases smoothly through T/sub f/ and has a slight upturn at low temperatures that we associate with weak localization. The magnetoresistance is negative in both systems and the anisotropic magnetoresistance is null, although the applied field induces anisotropic behavior in the Tb containing films (asperomagnets). All samples show quadratic and positive field dependence of magnetoresistance well inside the paramagnetic regime, and a linear regime below T/sub f/. At low temperatures and in the a-U/sub x/Gd/sub 1-//sub x/ films, negative (H)/sup 1/2/ and H 2 regimes occur and are associated with weak localization processes dominated by the inelastic mean free path

  19. Anisotropic gravitational instability

    International Nuclear Information System (INIS)

    Polyachenko, V.L.; Fridman, A.M.

    1988-01-01

    Exact solutions of stability problems are obtained for two anisotropic gravitational systems of different geometries - a layer of finite thickness at rest and a rotating cylinder of finite radius. It is shown that the anisotropic gravitational instability which develops in both cases is of Jeans type. However, in contrast to the classical aperiodic Jeans instability, this instability is oscillatory. The physics of the anisotropic gravitational instability is investigated. It is shown that in a gravitating layer this instability is due, in particular, to excitation of previously unknown interchange-Jeans modes. In the cylinder, the oscillatory Jeans instability is associated with excitation of a rotational branch, this also being responsible for the beam gravitational instability. This is the reason why this instability and the anisotropic gravitational instability have so much in common

  20. Tuning spin transport properties and molecular magnetoresistance through contact geometry

    Science.gov (United States)

    Ulman, Kanchan; Narasimhan, Shobhana; Delin, Anna

    2014-01-01

    Molecular spintronics seeks to unite the advantages of using organic molecules as nanoelectronic components, with the benefits of using spin as an additional degree of freedom. For technological applications, an important quantity is the molecular magnetoresistance. In this work, we show that this parameter is very sensitive to the contact geometry. To demonstrate this, we perform ab initio calculations, combining the non-equilibrium Green's function method with density functional theory, on a dithienylethene molecule placed between spin-polarized nickel leads of varying geometries. We find that, in general, the magnetoresistance is significantly higher when the contact is made to sharp tips than to flat surfaces. Interestingly, this holds true for both resonant and tunneling conduction regimes, i.e., when the molecule is in its "closed" and "open" conformations, respectively. We find that changing the lead geometry can increase the magnetoresistance by up to a factor of ˜5. We also introduce a simple model that, despite requiring minimal computational time, can recapture our ab initio results for the behavior of magnetoresistance as a function of bias voltage. This model requires as its input only the density of states on the anchoring atoms, at zero bias voltage. We also find that the non-resonant conductance in the open conformation of the molecule is significantly impacted by the lead geometry. As a result, the ratio of the current in the closed and open conformations can also be tuned by varying the geometry of the leads, and increased by ˜400%.

  1. Tuning spin transport properties and molecular magnetoresistance through contact geometry

    International Nuclear Information System (INIS)

    Ulman, Kanchan; Narasimhan, Shobhana; Delin, Anna

    2014-01-01

    Molecular spintronics seeks to unite the advantages of using organic molecules as nanoelectronic components, with the benefits of using spin as an additional degree of freedom. For technological applications, an important quantity is the molecular magnetoresistance. In this work, we show that this parameter is very sensitive to the contact geometry. To demonstrate this, we perform ab initio calculations, combining the non-equilibrium Green's function method with density functional theory, on a dithienylethene molecule placed between spin-polarized nickel leads of varying geometries. We find that, in general, the magnetoresistance is significantly higher when the contact is made to sharp tips than to flat surfaces. Interestingly, this holds true for both resonant and tunneling conduction regimes, i.e., when the molecule is in its “closed” and “open” conformations, respectively. We find that changing the lead geometry can increase the magnetoresistance by up to a factor of ∼5. We also introduce a simple model that, despite requiring minimal computational time, can recapture our ab initio results for the behavior of magnetoresistance as a function of bias voltage. This model requires as its input only the density of states on the anchoring atoms, at zero bias voltage. We also find that the non-resonant conductance in the open conformation of the molecule is significantly impacted by the lead geometry. As a result, the ratio of the current in the closed and open conformations can also be tuned by varying the geometry of the leads, and increased by ∼400%

  2. Tuning spin transport properties and molecular magnetoresistance through contact geometry.

    Science.gov (United States)

    Ulman, Kanchan; Narasimhan, Shobhana; Delin, Anna

    2014-01-28

    Molecular spintronics seeks to unite the advantages of using organic molecules as nanoelectronic components, with the benefits of using spin as an additional degree of freedom. For technological applications, an important quantity is the molecular magnetoresistance. In this work, we show that this parameter is very sensitive to the contact geometry. To demonstrate this, we perform ab initio calculations, combining the non-equilibrium Green's function method with density functional theory, on a dithienylethene molecule placed between spin-polarized nickel leads of varying geometries. We find that, in general, the magnetoresistance is significantly higher when the contact is made to sharp tips than to flat surfaces. Interestingly, this holds true for both resonant and tunneling conduction regimes, i.e., when the molecule is in its "closed" and "open" conformations, respectively. We find that changing the lead geometry can increase the magnetoresistance by up to a factor of ∼5. We also introduce a simple model that, despite requiring minimal computational time, can recapture our ab initio results for the behavior of magnetoresistance as a function of bias voltage. This model requires as its input only the density of states on the anchoring atoms, at zero bias voltage. We also find that the non-resonant conductance in the open conformation of the molecule is significantly impacted by the lead geometry. As a result, the ratio of the current in the closed and open conformations can also be tuned by varying the geometry of the leads, and increased by ∼400%.

  3. Effect of pressure on the magnetoresistance of single crystal Nd0.5Sr0.36Pb0.14MnO3-δ

    International Nuclear Information System (INIS)

    Khazeni, K.; Jia, Y.X.; Lu, L.; Crespi, V.H.; Cohen, M.L.; Zettl, A.

    1996-01-01

    To investigate the observed huge variations in magnetoresistance between different samples of manganite perovskites we have performed the first high-pressure measurement of magnetoresistance in single crystal Nd 0.5 Sr 0.36 Pb 0.14 MnO 3-δ . Both resistivity and magnetoresistance are strongly suppressed upon application of pressure. The decrease in magnetoresistance with increasing pressure rules out substrate-induced compressive strain as a source of enhanced magnetoresistance. Instead, the magnetoresistance differences between samples are ascribed primarily to the more abrupt nature of the semiconductorlike to metallic phase transition at lower temperatures. copyright 1996 The American Physical Society

  4. Rectifying characteristics and magnetoresistance in La0.9Sr0.1MnO3/Nb-doped SrTiO3 heterojunctions

    International Nuclear Information System (INIS)

    Luo, Z.; Gao, J.

    2007-01-01

    Manganite-based heterojunctions have attracted lots of attention as one of the most promising practical applications of colossal magnetoresistance materials. In this work, heterojunctions were fabricated by depositing La 0.9 Sr 0.1 MnO 3 (LSMO) films on substrates of 0.7 wt.% Nb-doped SrTiO 3 using pulsed laser deposition technique. X-ray diffraction spectra confirmed that the grown films are of single phase and have an orientation with the c-axis perpendicular to the substrate surface. As temperature decreases, the resistivity of LSMO films first increases gradually and then increases abruptly at temperature lower than 150 K. These junctions showed clear rectifying characteristics and strong temperature dependent current-voltage relation. Diffusion voltage decreases as temperature increases. Under forward bias, current is proportion to exp(eV/nkT). Ideal factor increases quickly and tunneling current plays more and more important role as temperature decreases. At 50 K, tunneling current becomes nearly dominant. Large magnetoresistance was observed. The sign and value of such magnetoresistance depends on the direction and value of current

  5. Anisotropic constant-roll inflation

    Energy Technology Data Exchange (ETDEWEB)

    Ito, Asuka; Soda, Jiro [Kobe University, Department of Physics, Kobe (Japan)

    2018-01-15

    We study constant-roll inflation in the presence of a gauge field coupled to an inflaton. By imposing the constant anisotropy condition, we find new exact anisotropic constant-roll inflationary solutions which include anisotropic power-law inflation as a special case. We also numerically show that the new anisotropic solutions are attractors in the phase space. (orig.)

  6. Giant magnetoresistance in lateral metallic nanostructures for spintronic applications.

    Science.gov (United States)

    Zahnd, G; Vila, L; Pham, V T; Marty, A; Beigné, C; Vergnaud, C; Attané, J P

    2017-08-25

    In this letter, we discuss the shift observed in spintronics from the current-perpendicular-to-plane geometry towards lateral geometries, illustrating the new opportunities offered by this configuration. Using CoFe-based all-metallic LSVs, we show that giant magnetoresistance variations of more than 10% can be obtained, competitive with the current-perpendicular-to-plane giant magnetoresistance. We then focus on the interest of being able to tailor freely the geometries. On the one hand, by tailoring the non-magnetic parts, we show that it is possible to enhance the spin signal of giant magnetoresistance structures. On the other hand, we show that tailoring the geometry of lateral structures allows creating a multilevel memory with high spin signals, by controlling the coercivity and shape anisotropy of the magnetic parts. Furthermore, we study a new device in which the magnetization direction of a nanodisk can be detected. We thus show that the ability to control the magnetic properties can be used to take advantage of all the spin degrees of freedom, which are usually occulted in current-perpendicular-to-plane devices. This flexibility of lateral structures relatively to current-perpendicular-to-plane structures is thus found to offer a new playground for the development of spintronic applications.

  7. Magnetoresistance in hybrid organic spin valves at the onset of multiple-step tunneling.

    Science.gov (United States)

    Schoonus, J J H M; Lumens, P G E; Wagemans, W; Kohlhepp, J T; Bobbert, P A; Swagten, H J M; Koopmans, B

    2009-10-02

    By combining experiments with simple model calculations, we obtain new insight in spin transport through hybrid, CoFeB/Al2O3(1.5 nm)/tris(8-hydroxyquinoline)aluminium (Alq3)/Co spin valves. We have measured the characteristic changes in the I-V behavior as well as the intrinsic loss of magnetoresistance at the onset of multiple-step tunneling. In the regime of multiple-step tunneling, under the condition of low hopping rates, spin precession in the presence of hyperfine coupling is conjectured to be the relevant source of spin relaxation. A quantitative analysis leads to the prediction of a symmetric magnetoresistance around zero magnetic field in addition to the hysteretic magnetoresistance curves, which are indeed observed in our experiments.

  8. Efficient spin injection and giant magnetoresistance in Fe / MoS 2 / Fe junctions

    KAUST Repository

    Dolui, Kapildeb

    2014-07-02

    We demonstrate giant magnetoresistance in Fe/MoS2/Fe junctions by means of ab initio transport calculations. We show that junctions incorporating either a monolayer or a bilayer of MoS2 are metallic and that Fe acts as an efficient spin injector into MoS2 with an efficiency of about 45%. This is the result of the strong coupling between the Fe and S atoms at the interface. For junctions of greater thickness, a maximum magnetoresistance of ∼300% is obtained, which remains robust with the applied bias as long as transport is in the tunneling limit. A general recipe for improving the magnetoresistance in spin valves incorporating layered transition metal dichalcogenides is proposed. © 2014 American Physical Society.

  9. A study of inelastic electron-phonon interactions on tunneling magnetoresistance of a nano-scale device

    International Nuclear Information System (INIS)

    Modarresi, M.; Roknabadi, M.R.; Shahtahmasbi, N.; Vahedi Fakhrabad, D.; Arabshahi, H.

    2011-01-01

    In this research, we have studied the effect of inelastic electron-phonon interactions on current-voltage characteristic and tunneling magnetoresistance of a polythiophene molecule that is sandwiched between two cobalt electrodes using modified Green's function method as proposed by Walczak. The molecule is described with a modified Su-Schrieffer-Heeger Hamiltonian. The ground state of the molecule is obtained by Hellman-Feynman theorem. Electrodes are described in the wide-band approximation and spin-flip is neglected during conduction. Our calculation results show that with increase in voltage the currents increase and tunneling magnetoresistance decreases. Change in tunneling magnetoresistance due to inelastic interactions is limited in a small bias voltage interval and can be neglected in the other bias voltages. -- Research Highlights: →We investigate the effect of inelastic interaction on transport properties. →Due to inelastic interactions tunneling magnetoresistance decreases. →Decrease in TMR is restricted in a small voltage interval.

  10. Superconducting transition and low-field magnetoresistance of a niobium single crystal at 4.2 deg. K; Transition supraconductrice et magnetoresistance en champ faible d'un echantillon monocristallin de niobium a 4.2 deg. K

    Energy Technology Data Exchange (ETDEWEB)

    Perriot, G [Commissariat a l' Energie Atomique, Saclay (France). Centre d' Etudes Nucleaires. Service de physique du solide et de resonnance magnetique

    1967-01-01

    We report the study of the electrical resistance of a niobium single crystal, at 4.2 deg. K, from the beginning of the superconductive transition to 80 kilo oersteds. Critical fieldsH{sub c2} and H{sub c3} have been determined. Influences on superconductive transition of current density, field-current angle, crystal orientation and magnetoresistance have been studied. Variation laws of low-field transverse and longitudinal magneto-resistances have been determined. (author) [French] La variation de la resistance electrique d'un monocristal cylindrique de niobium a ete etudiee, a 4,2 deg. K, depuis le debut de la transition supraconductrice jusqu'a 80 kilooersteds. Les champs critiques H{sub c2} et H{sub c3} ont ete determines. On a etudie l'influence de la densite de courant, de l'angle champ-courant, de l'anisotropie cristalline et de la magnetoresistance sur la transition supraconductrice. Les lois de variation des magnetoresistances transversale et longitudinale ont ete determinees dans le domaine des champs faibles. (auteur)

  11. Size-dependent giant-magnetoresistance in millimeter scale GaAs/AlGaAs 2D electron devices

    Science.gov (United States)

    Mani, R. G.

    2013-01-01

    Large changes in the electrical resistance induced by the application of a small magnetic field are potentially useful for device-applications. Such Giant Magneto-Resistance (GMR) effects also provide new insights into the physical phenomena involved in the associated electronic transport. This study examines a “bell-shape” negative GMR that grows in magnitude with decreasing temperatures in mm-wide devices fabricated from the high-mobility GaAs/AlGaAs 2-Dimensional Electron System (2DES). Experiments show that the span of this magnetoresistance on the magnetic-field-axis increases with decreasing device width, W, while there is no concurrent Hall resistance, Rxy, correction. A multi-conduction model, including negative diagonal-conductivity, and non-vanishing off-diagonal conductivity, reproduces experimental observations. The results suggest that a size effect in the mm-wide 2DES with mm-scale electron mean-free-paths is responsible for the observed “non-ohmic” size-dependent negative GMR. PMID:24067264

  12. A Magnetoresistive Tactile Sensor for Harsh Environment Applications

    KAUST Repository

    Alfadhel, Ahmed; Khan, Mohammed Zahed Mustafa; Cardoso, Susana; Leitao, Diana; Kosel, Jü rgen

    2016-01-01

    A magnetoresistive tactile sensor is reported, which is capable of working in high temperatures up to 140 °C. Hair-like bioinspired structures, known as cilia, made out of permanent magnetic nanocomposite material on top of spin-valve giant magnetoresistive (GMR) sensors are used for tactile sensing at high temperatures. The magnetic nanocomposite, consisting of iron nanowires incorporated into the polymer polydimethylsiloxane (PDMS), is very flexible, biocompatible, has high remanence, and is also resilient to antagonistic sensing ambient. When the cilia come in contact with a surface, they deflect in compliance with the surface topology. This yields a change of the GMR sensor signal, enabling the detection of extremely fine features. The spin-valve is covered with a passivation layer, which enables adequate performance in spite of harsh environmental conditions, as demonstrated in this paper for high temperature.

  13. A Magnetoresistive Tactile Sensor for Harsh Environment Applications

    KAUST Repository

    Alfadhel, Ahmed

    2016-05-07

    A magnetoresistive tactile sensor is reported, which is capable of working in high temperatures up to 140 °C. Hair-like bioinspired structures, known as cilia, made out of permanent magnetic nanocomposite material on top of spin-valve giant magnetoresistive (GMR) sensors are used for tactile sensing at high temperatures. The magnetic nanocomposite, consisting of iron nanowires incorporated into the polymer polydimethylsiloxane (PDMS), is very flexible, biocompatible, has high remanence, and is also resilient to antagonistic sensing ambient. When the cilia come in contact with a surface, they deflect in compliance with the surface topology. This yields a change of the GMR sensor signal, enabling the detection of extremely fine features. The spin-valve is covered with a passivation layer, which enables adequate performance in spite of harsh environmental conditions, as demonstrated in this paper for high temperature.

  14. A Magnetoresistive Tactile Sensor for Harsh Environment Applications

    Directory of Open Access Journals (Sweden)

    Ahmed Alfadhel

    2016-05-01

    Full Text Available A magnetoresistive tactile sensor is reported, which is capable of working in high temperatures up to 140 °C. Hair-like bioinspired structures, known as cilia, made out of permanent magnetic nanocomposite material on top of spin-valve giant magnetoresistive (GMR sensors are used for tactile sensing at high temperatures. The magnetic nanocomposite, consisting of iron nanowires incorporated into the polymer polydimethylsiloxane (PDMS, is very flexible, biocompatible, has high remanence, and is also resilient to antagonistic sensing ambient. When the cilia come in contact with a surface, they deflect in compliance with the surface topology. This yields a change of the GMR sensor signal, enabling the detection of extremely fine features. The spin-valve is covered with a passivation layer, which enables adequate performance in spite of harsh environmental conditions, as demonstrated in this paper for high temperature.

  15. Dynamical anisotropic response of black phosphorus under magnetic field

    Science.gov (United States)

    Liu, Xuefeng; Lu, Wei; Zhou, Xiaoying; Zhou, Yang; Zhang, Chenglong; Lai, Jiawei; Ge, Shaofeng; Sekhar, M. Chandra; Jia, Shuang; Chang, Kai; Sun, Dong

    2018-04-01

    Black phosphorus (BP) has emerged as a promising material candidate for next generation electronic and optoelectronic devices due to its high mobility, tunable band gap and highly anisotropic properties. In this work, polarization resolved ultrafast mid-infrared transient reflection spectroscopy measurements are performed to study the dynamical anisotropic optical properties of BP under magnetic fields up to 9 T. The relaxation dynamics of photoexcited carrier is found to be insensitive to the applied magnetic field due to the broadening of the Landau levels and large effective mass of carriers. While the anisotropic optical response of BP decreases with increasing magnetic field, its enhancement due to the excitation of hot carriers is similar to that without magnetic field. These experimental results can be well interpreted by the magneto-optical conductivity of the Landau levels of BP thin film, based on an effective k · p Hamiltonian and linear response theory. These findings suggest attractive possibilities of multi-dimensional control of anisotropic response (AR) of BP with light, electric and magnetic field, which further introduces BP to the fantastic magnetic field sensitive applications.

  16. arXiv (3+1)-dimensional anisotropic fluid dynamics with a lattice QCD equation of state

    CERN Document Server

    McNelis, M.; Heinz, U.

    2018-06-01

    Anisotropic hydrodynamics improves upon standard dissipative fluid dynamics by treating certain large dissipative corrections non-perturbatively. Relativistic heavy-ion collisions feature two such large dissipative effects: (i) Strongly anisotropic expansion generates a large shear stress component which manifests itself in very different longitudinal and transverse pressures, especially at early times. (ii) Critical fluctuations near the quark-hadron phase transition lead to a large bulk viscous pressure on the conversion surface between hydrodynamics and a microscopic hadronic cascade description of the final collision stage. We present a new dissipative hydrodynamic formulation for non-conformal fluids where both of these effects are treated nonperturbatively. The evolution equations are derived from the Boltzmann equation in the 14-moment approximation, using an expansion around an anisotropic leading-order distribution function with two momentum-space deformation parameters, accounting for the longitudin...

  17. Anisotropic stress as a signature of nonstandard propagation of gravitational waves.

    Science.gov (United States)

    Saltas, Ippocratis D; Sawicki, Ignacy; Amendola, Luca; Kunz, Martin

    2014-11-07

    We make precise the heretofore ambiguous statement that anisotropic stress is a sign of a modification of gravity. We show that in cosmological solutions of very general classes of models extending gravity-all scalar-tensor theories (Horndeski), Einstein-aether models, and bimetric massive gravity-a direct correspondence exists between perfect fluids apparently carrying anisotropic stress and a modification in the propagation of gravitational waves. Since the anisotropic stress can be measured in a model-independent manner, a comparison of the behavior of gravitational waves from cosmological sources with large-scale-structure formation could, in principle, lead to new constraints on the theory of gravity.

  18. Extraordinary magnetoresistance in semiconductor/metal hybrids: A review

    KAUST Repository

    Sun, J.; Kosel, Jü rgen

    2013-01-01

    The Extraordinary Magnetoresistance (EMR) effect is a change in the resistance of a device upon the application of a magnetic field in hybrid structures, consisting of a semiconductor and a metal. The underlying principle of this phenomenon is a

  19. Temperature dependence of magnetoresistance in neutron-irradiated and unirradiated high resistivity p-type silicon

    International Nuclear Information System (INIS)

    Yildirim, M.; Efeoglu, H.; Abay, B.; Yogurtcu, Y.K.

    1996-01-01

    The temperature dependence of the transverse magnetoresistance in irradiated and unirradiated p-type Si is studied in the range from 120 to 290 K. The magnetoresistance coefficients for the unirradiated left angle 001 right angle and left angle 1 anti 10 right angle samples increases with decreasing sample temperature in the range from 160 to 290 K, however, this behavior is reversed below 160 K. It is proposed that this reversal is due to the double injection effect. The magnetoresistance coefficient for the irradiated left angle 001 right angle sample increases with decreasing sample temperature in the range of 120 to 290 K and is greater than that for the unirradiated left angle 001 right angle sample. This result can be explained by increased scattering due to the increased number of defects produced by irradiation. On the other hand, the magnetoresistance coefficient for the unirradiated left angle 1 anti 10 right angle sample is found to be greater than that of the unirradiated left angle 001 right angle sample. (orig.)

  20. Linear magnetoresistance and surface to bulk coupling in topological insulator thin films.

    Science.gov (United States)

    Singh, Sourabh; Gopal, R K; Sarkar, Jit; Pandey, Atul; Patel, Bhavesh G; Mitra, Chiranjib

    2017-12-20

    We explore the temperature dependent magnetoresistance of bulk insulating topological insulator thin films. Thin films of Bi 2 Se 2 Te and BiSbTeSe 1.6 were grown using the pulsed laser deposition technique and subjected to transport measurements. Magnetotransport measurements indicate a non-saturating linear magnetoresistance (LMR) behavior at high magnetic field values. We present a careful analysis to explain the origin of LMR taking into consideration all the existing models of LMR. Here we consider that the bulk insulating states and the metallic surface states constitute two parallel conduction channels. Invoking this, we were able to explain linear magnetoresistance behavior as a competition between these parallel channels. We observe that the cross-over field, where LMR sets in, decreases with increasing temperature. We propose that this cross-over field can be used phenomenologically to estimate the strength of surface to bulk coupling.

  1. Inflationary perturbations in anisotropic, shear-free universes

    International Nuclear Information System (INIS)

    Pereira, Thiago S.; Carneiro, Saulo; Marugan, Guillermo A. Mena

    2012-01-01

    In this work, the linear and gauge-invariant theory of cosmological perturbations in a class of anisotropic and shear-free spacetimes is developed. After constructing an explicit set of complete eigenfunctions in terms of which perturbations can be expanded, we identify the effective degrees of freedom during a generic slow-roll inflationary phase. These correspond to the anisotropic equivalent of the standard Mukhanov-Sasaki variables. The associated equations of motion present a remarkable resemblance to those found in perturbed Friedmann-Robertson-Walker spacetimes with curvature, apart from the spectrum of the Laplacian, which exhibits the characteristic frequencies of the underlying geometry. In particular, it is found that the perturbations cannot develop arbitrarily large super-Hubble modes

  2. Power law field dependence of the 2D magnetoresistance in (TMTSF)2PF6

    International Nuclear Information System (INIS)

    Kriza, G.; Szeghy, G.; Kezsmarki, I.; Mihaly, G.

    1999-01-01

    The magnetoresistance of the quasi-one-dimensional organic conductor (TMTSF) 2 PF 6 is studied for currents flowing parallel to the best conducting a and second best conducting b directions in magnetic fields perpendicular to the a-b plane under a hydrostatic pressure of 0.8 GPa. As a function of the magnetic field, the magnetoresistance follows a power law ΔR/R = (B/B 0 ) 3/2 both in the a and b directions. The a-b plane conductivity anisotropy is field independent. The scaling field B 0 , characterizing the strength of the magnetoresistance, follows an exponential temperature dependence B 0 ∝exp(T/T 0 ) with a field-independent characteristic temperature T 0 = 10 K. (orig.)

  3. Magnetoresistance in organic semiconductors: Including pair correlations in the kinetic equations for hopping transport

    Science.gov (United States)

    Shumilin, A. V.; Kabanov, V. V.; Dediu, V. I.

    2018-03-01

    We derive kinetic equations for polaron hopping in organic materials that explicitly take into account the double occupation possibility and pair intersite correlations. The equations include simplified phenomenological spin dynamics and provide a self-consistent framework for the description of the bipolaron mechanism of the organic magnetoresistance. At low applied voltages, the equations can be reduced to those for an effective resistor network that generalizes the Miller-Abrahams network and includes the effect of spin relaxation on the system resistivity. Our theory discloses the close relationship between the organic magnetoresistance and the intersite correlations. Moreover, in the absence of correlations, as in an ordered system with zero Hubbard energy, the magnetoresistance vanishes.

  4. Large spin Hall magnetoresistance and its correlation to the spin-orbit torque in W/CoFeB/MgO structures

    Science.gov (United States)

    Cho, Soonha; Baek, Seung-heon Chris; Lee, Kyeong-Dong; Jo, Younghun; Park, Byong-Guk

    2015-01-01

    The phenomena based on spin-orbit interaction in heavy metal/ferromagnet/oxide structures have been investigated extensively due to their applicability to the manipulation of the magnetization direction via the in-plane current. This implies the existence of an inverse effect, in which the conductivity in such structures should depend on the magnetization orientation. In this work, we report a systematic study of the magnetoresistance (MR) of W/CoFeB/MgO structures and its correlation with the current-induced torque to the magnetization. We observe that the MR is independent of the angle between the magnetization and current direction but is determined by the relative magnetization orientation with respect to the spin direction accumulated by the spin Hall effect, for which the symmetry is identical to that of so-called the spin Hall magnetoresistance. The MR of ~1% in W/CoFeB/MgO samples is considerably larger than those in other structures of Ta/CoFeB/MgO or Pt/Co/AlOx, which indicates a larger spin Hall angle of W. Moreover, the similar W thickness dependence of the MR and the current-induced magnetization switching efficiency demonstrates that MR in a non-magnet/ferromagnet structure can be utilized to understand other closely correlated spin-orbit coupling effects such as the inverse spin Hall effect or the spin-orbit spin transfer torques. PMID:26423608

  5. Magnetoresistance measurements of different geometries on epitaxial InP and GaInAs/InP layers

    Energy Technology Data Exchange (ETDEWEB)

    Somogyi, K. [Hungarian Academy of Sciences, Budapest (Hungary). Research Inst. for Technical Physics

    1996-12-31

    Hall effect measurement is the main method of the determination of the charge carrier mobility in semiconductors. Magnetoresistance measurements are much less used for the same purpose, perhaps because of the influence of the sample geometry or of the scattering factor differing from the Hall factor. On the other hand, in the case of the epitaxial layers, all these measurements require semi-insulating substrate. In this work two aspects of the magnetoresistance measurements and use of them is demonstrated. First classical geometrical magnetoresistance measurements on InP are studied. On the other hand, a method is presented and applied to sandwich structures in order to measure the geometrical magnetoresistance on epitaxial layers grown on conducting substrates. Resistance of structures metal-epitaxial layer-substrate-metal is measured in the dependence on the angle between the current and magnetic field vectors.

  6. Grain-boundary effects on the magnetoresistance properties of perovskite manganite films

    International Nuclear Information System (INIS)

    Gupta, A.; Gong, G.Q.; Xiao, G.; Duncombe, P.R.; Lecoeur, P.; Trouilloud, P.; Wang, Y.Y.; Dravid, V.P.; Sun, J.Z.

    1996-01-01

    The role of grain boundaries in the magnetoresistance (MR) properties of the manganites has been investigated by comparing the properties of epitaxial and polycrystalline films of La 0.67 D 0.33 MnO 3-δ (D=Ca,Sr, or vacancies). While the MR in the epitaxial films is strongly peaked near the ferromagnetic transition temperature and is very small at low temperatures, the polycrystalline films show large MR over a wide temperature range down to 5 K. The results are explained in terms of switching of magnetic domains in the grains and disorder-induced canting of Mn spins in the grain-boundary region. copyright 1996 The American Physical Society

  7. Negative magnetoresistance in perpendicular of the superlattices axis weak magnetic field at scattering of impurity ions

    International Nuclear Information System (INIS)

    Askerov, B. M.; Figarova, R.; Guseynov, G.I.

    2012-01-01

    Full Text : The transverse magnetoresistance in superlattices with the cosine dispersion law of conduction electrons in a case, when a weak magnetic field in plane of layer at scattering of the charge carriers of impurity ions has been studied. It has been shown that in a quasi-two-dimensional case the magnetoresistance was positive, while in a quasi-three-dimensional case can become negative depending of a degree of mini-band filling. Such behavior of magnetoresistance, apparently, has been related to presence in a mini-band of region with the negative effective mass

  8. Mixed-phase description of colossal magnetoresistive manganites

    Czech Academy of Sciences Publication Activity Database

    Weiáe, A.; Loos, Jan; Fehske, H.

    2003-01-01

    Roč. 68, č. 2 (2003), s. 024402-1 - 021102-6 ISSN 0163-1829 Grant - others:DFG(DE) 436 TSE 113/33/0-2 Institutional research plan: CEZ:AV0Z1010914 Keywords : polarons * metal-insulator transitions * colossal magnetoresistance Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.962, year: 2003

  9. Giant magneto-resistance devices

    CERN Document Server

    Hirota, Eiichi; Inomata, Koichiro

    2002-01-01

    This book deals with the application of giant magneto-resistance (GMR) effects to electronic devices. It will appeal to engineers and graduate students in the fields of electronic devices and materials. The main subjects are magnetic sensors with high resolution and magnetic read heads with high sensitivity, required for hard-disk drives with recording densities of several gigabytes. Another important subject is novel magnetic random-access memories (MRAM) with non-volatile non-destructive and radiation-resistant characteristics. Other topics include future GMR devices based on bipolar spin transistors, spin field-effect transistors (FETs) and double-tunnel junctions.

  10. Antisite disorder-induced low-field magnetoresistance in some frustrated Sr2FeMoO6

    International Nuclear Information System (INIS)

    Cai Tianyi; Ju Sheng; Li Zhenya

    2006-01-01

    Considering the existence of antiferromagnetic patches induced by the antisite disorder in ferrimagnetic Sr 2 FeMoO 6 , we have developed a resistor network model to account for the effects of the antisite disorder on the magnetoresistance in this material. It is proposed that the magnetic disorder resulting from the existence of frustration around the antiferromagnetic patches will be suppressed under the applied magnetic field and low-field magnetoresistance will be observed. For samples with low levels of antisite defects, the magnetoresistive behaviour may be strongly affected by the different degrees of magnetic inhomogeneity. Our calculated results are in agreement with experimental observations

  11. Angular Magnetoresistance and Hall Measurements in New Dirac Material, ZrSiS

    Science.gov (United States)

    Ali, Mazhar; Schoop, Leslie; Lotsch, Bettina; Parkin, Stuart

    Dirac and Weyl materials have shot to the forefront of condensed matter research in the last few years. Recently, the square-net material, ZrSiS, was theorized and experimentally shown (via ARPES) to host several highly dispersive Dirac cones, including the first Dirac cone demanded by non-symmorphic symmetry in a Si square net. Here we report the magnetoresistance and Hall Effect measurements in this compound. ZrSiS samples with RRR = 40 were found to have MR values up to 6000% at 2 K, be predominantly p-type with a carrier concentration of ~8 x 1019 cm-3 and mobility ~8500 cm2/Vs. Angular magnetoresistance measurements reveal a peculiar behavior with multiple local maxima, depending on field strength, indicating of a sensitive and sensitive Fermi surface. SdH oscillations analysis confirms Hall and angular magnetoresistance measurements. These results, in the context of the theoretical and ARPES results, will be discussed.

  12. Anomalous Hall effect and magnetoresistance behavior in Co/Pd1−xAgx multilayers

    KAUST Repository

    Guo, Z. B.

    2013-02-13

    In this paper, we report anomalous Hall effect (AHE) correlated with the magnetoresistance behavior in [Co/Pd1-xAg x]n multilayers. For the multilayers with n = 6, the increase in Ag content from x = 0 to 0.52 induces the change in AHE sign from negative surface scattering-dominated AHE to positive interface scattering-dominated AHE, which is accompanied with the transition from anisotropy magnetoresistance (AMR) dominated transport to giant magnetoresistance (GMR) dominated transport. For n = 80, scaling analysis with Rs ∝ρ xx γ yields γ ∼ 3.44 for x = 0.52 which presents GMR-type transport, in contrast to γ ∼ 5.7 for x = 0 which presents AMR-type transport. © 2013 American Institute of Physics.

  13. Apparent negative magnetoresistance without independent Weyl pockets in the Weyl semimetal TaP

    Energy Technology Data Exchange (ETDEWEB)

    Hassinger, Elena; Arnold, Frank; Naumann, Marcel; Wu, Shu-Chun; Sun, Yan; Donizeth dos Reis, Ricardo; Ajeesh, Mukkattu O.; Shekhar, Chandra; Kumar, Nitesh; Schmidt, Marcus; Baenitz, Michael; Borrmann, Horst; Nicklas, Michael; Felser, Claudia [Max Planck Institute for Chemical Physics of Solids, Dresden (Germany); Grushin, Adolfo; Bardarson, Jens [Max Planck Institute for Physics of Complex Systems, Dresden (Germany); Yan, Binghai [Max Planck Institute for Chemical Physics of Solids, Dresden (Germany); Max Planck Institute for Physics of Complex Systems, Dresden (Germany)

    2016-07-01

    In the recently discovered Weyl semimetals, an unconventional negative longitudinal magnetoresistance is expected due to a phenomenon called chiral anomaly. An open question is, how close the Fermi energy needs to be to the Weyl nodes, in order to detect this phenomenon. This question can only be addressed by knowing the electronic bandstructure, i.e. the position of the Fermi energy, and the intrinsic longitudinal magnetoresistance precisely. Here, we report the detailed Fermi surface topology of the Weyl semimetal TaP determined via angle-resolved quantum oscillation spectra combined with band-structure calculations. The Fermi surface consists of an electron and a hole banana without independent pockets around the Weyl points. Although the absence of independent Fermi surface pockets around the Weyl points means that no chiral anomaly is expected, we detect a negative longitudinal magnetoresistance. We discuss possible origins.

  14. A device model framework for magnetoresistive sensors based on the Stoner–Wohlfarth model

    International Nuclear Information System (INIS)

    Bruckner, Florian; Bergmair, Bernhard; Brueckl, Hubert; Palmesi, Pietro; Buder, Anton; Satz, Armin; Suess, Dieter

    2015-01-01

    The Stoner–Wohlfarth (SW) model provides an efficient analytical model to describe the behavior of magnetic layers within magnetoresistive sensors. Combined with a proper description of magneto-resistivity an efficient device model can be derived, which is necessary for an optimal electric circuit design. Parameters of the model are determined by global optimization of an application specific cost function which contains measured resistances for different applied fields. Several application cases are examined and used for validation of the device model. - Highlights: • An efficient device model framework for various types of magnetoresistive sensors is presented. • The model is based on the analytical solution of the Stoner–Wohlfarth model. • Numerical optimization methods provide optimal model parameters for a different application cases. • The model is applied to several application cases and is able to reproduce measured hysteresis and swiching behavior

  15. Piecewise parabolic negative magnetoresistance of two-dimensional electron gas with triangular antidot lattice

    International Nuclear Information System (INIS)

    Budantsev, M. V.; Lavrov, R. A.; Pogosov, A. G.; Zhdanov, E. Yu.; Pokhabov, D. A.

    2011-01-01

    Extraordinary piecewise parabolic behavior of the magnetoresistance has been experimentally detected in the two-dimensional electron gas with a dense triangular lattice of antidots, where commensurability magnetoresistance oscillations are suppressed. The magnetic field range of 0–0.6 T can be divided into three wide regions, in each of which the magnetoresistance is described by parabolic dependences with high accuracy (comparable to the experimental accuracy) and the transition regions between adjacent regions are much narrower than the regions themselves. In the region corresponding to the weakest magnetic fields, the parabolic behavior becomes almost linear. The observed behavior is reproducible as the electron gas density changes, which results in a change in the resistance by more than an order of magnitude. Possible physical mechanisms responsible for the observed behavior, including so-called “memory effects,” are discussed.

  16. Plasma resonance in anisotropic layered high-Tc superconductors

    DEFF Research Database (Denmark)

    Sakai, Shigeki; Pedersen, Niels Falsig

    1999-01-01

    The plasma resonance is described theoretically by the inductive coupling model for a large stacked Josephson-junction system such as the intrinsic Josephson-junction array in anisotropic high- T-c superconductors. Eigenmodes of the plasma oscillation are analytically described and a numerical...

  17. Enhanced ferromagnetism, metal-insulator transition, and large magnetoresistance in La1-xCaxMn1-xRuxO3 free of eg-orbital double-exchange

    Science.gov (United States)

    Liu, M. F.; Du, Z. Z.; Liu, H. M.; Li, X.; Yan, Z. B.; Dong, S.; Liu, J.-M.

    2014-03-01

    The structure, ionic valences, magnetism, and magneto-transport behaviors of mixed valence oxides La1-xCaxMn1-xRuxO3 are systematically investigated. The simultaneous substitutions of La3+ and Mn3+ ions by Ca2+ and Ru4+, respectively, are confirmed by the structural and ionic valence characterizations, excluding the presence of Mn4+ and Ru3+ ions. The enhanced ferromagnetism, induced metal-insulator transition, and remarkable magnetoresistance effect are demonstrated when the substitution level x is lower than ˜0.6, in spite of the absence of the Mn3+-Ru4+ eg-orbital double-exchange. These anomalous magnetotransport effects are discussed based on the competing multifold interactions associated with the Mn3+-Ru4+ super-exchange and strong Ru4+-Ru4+ hopping, while the origins for the metal-insulator transition and magnetoresistance effect remain to be clarified.

  18. Giant magnetoresistance in melt spun Cu85Co10Ni5

    DEFF Research Database (Denmark)

    Curiotto, Stefano; Johnson, Erik; Celegato, Federica

    2009-01-01

    CuCoNi rapidly solidified alloys are interesting because they display giant magnetoresistance (GMR). In the present work a Cu85Co10Ni5 alloy has been synthesized by melt spinning and analysed for GMR. The ribbons obtained have been annealed at different temperatures and the evolution of the crystal...... structure with annealing has been studied by X-ray diffraction. The. ne microstructure has been observed by TEM and related to the magnetic properties, investigated in a vibrating sample magnetometer. In the studied composition the magnetoresistance was found to be lower than in binary CuCo alloys without...

  19. Giant negative magnetoresistance in Ni(quinoline-8-selenoate)2.

    Science.gov (United States)

    Black, Nicholas; Daiki, Tonouchi; Matsushita, Michio M; Woollins, J Derek; Awaga, Kunio; Robertson, Neil

    2017-12-20

    The magnetic, structural, conductivity and magnetoresistance properties of [Ni(quinoline-8-selenoate) 2 ] ([Ni(qs) 2 ]) have been studied. Despite the insolubility of the material necessitating its study as a powdered sample, a remarkably high conductivity has been measured. The conductivity is an order of magnitude greater than the thin-film processable thiol analogue previously reported and has been interpreted through the same space-charge limited conduction mechanism with charges injected from the electrodes. The introduction of selenium, results in a material with conductivity approaching metallic due to the enhanced interaction between adjacent molecules. Additionally, under an applied magnetic field, the material displays a negative magnetoresistance effect above 35% at 2 K. The effect can still be observed at 200 K and is interpreted in terms of a double-exchange mechanism.

  20. Study of magnetoresistance and conductance of bicrystal grain ...

    Indian Academy of Sciences (India)

    Presence of grain boundary exhibits substantial magnetoresistance ratio (MRR) in the low field and low temperature region. Bicrystal grain boundary contribution in MRR disappears at temperature > 175 K. At low temperature, - characteristic of the microbridge across bicrystal grain boundary is nonlinear. Analysis of ...

  1. Cosmological signatures of anisotropic spatial curvature

    International Nuclear Information System (INIS)

    Pereira, Thiago S.; Marugán, Guillermo A. Mena; Carneiro, Saulo

    2015-01-01

    If one is willing to give up the cherished hypothesis of spatial isotropy, many interesting cosmological models can be developed beyond the simple anisotropically expanding scenarios. One interesting possibility is presented by shear-free models in which the anisotropy emerges at the level of the curvature of the homogeneous spatial sections, whereas the expansion is dictated by a single scale factor. We show that such models represent viable alternatives to describe the large-scale structure of the inflationary universe, leading to a kinematically equivalent Sachs-Wolfe effect. Through the definition of a complete set of spatial eigenfunctions we compute the two-point correlation function of scalar perturbations in these models. In addition, we show how such scenarios would modify the spectrum of the CMB assuming that the observations take place in a small patch of a universe with anisotropic curvature

  2. Cosmological signatures of anisotropic spatial curvature

    Energy Technology Data Exchange (ETDEWEB)

    Pereira, Thiago S. [Departamento de Física, Universidade Estadual de Londrina, 86057-970, Londrina – PR (Brazil); Marugán, Guillermo A. Mena [Instituto de Estructura de la Materia, IEM-CSIC, Serrano 121, 28006, Madrid (Spain); Carneiro, Saulo, E-mail: tspereira@uel.br, E-mail: mena@iem.cfmac.csic.es, E-mail: saulo.carneiro@pq.cnpq.br [Instituto de Física, Universidade Federal da Bahia, 40210-340, Salvador – BA (Brazil)

    2015-07-01

    If one is willing to give up the cherished hypothesis of spatial isotropy, many interesting cosmological models can be developed beyond the simple anisotropically expanding scenarios. One interesting possibility is presented by shear-free models in which the anisotropy emerges at the level of the curvature of the homogeneous spatial sections, whereas the expansion is dictated by a single scale factor. We show that such models represent viable alternatives to describe the large-scale structure of the inflationary universe, leading to a kinematically equivalent Sachs-Wolfe effect. Through the definition of a complete set of spatial eigenfunctions we compute the two-point correlation function of scalar perturbations in these models. In addition, we show how such scenarios would modify the spectrum of the CMB assuming that the observations take place in a small patch of a universe with anisotropic curvature.

  3. Voltage-controlled ferromagnetism and magnetoresistance in LaCoO3/SrTiO3 heterostructures

    International Nuclear Information System (INIS)

    Hu, Chengqing; Park, Keun Woo; Yu, Edward T.; Posadas, Agham; Demkov, Alexander A.; Jordan-Sweet, Jean L.

    2013-01-01

    A LaCoO 3 /SrTiO 3 heterostructure grown on Si (001) is shown to provide electrically switchable ferromagnetism, a large, electrically tunable magnetoresistance, and a vehicle for achieving and probing electrical control over ferromagnetic behavior at submicron dimensions. Fabrication of devices in a field-effect transistor geometry enables application of a gate bias voltage that modulates strain in the heterostructure via the converse piezoelectric effect in SrTiO 3 , leading to an artificial inverse magnetoelectric effect arising from the dependence of ferromagnetism in the LaCoO 3 layer on strain. Below the Curie temperature of the LaCoO 3 layer, this effect leads to modulation of resistance in LaCoO 3 as large as 100%, and magnetoresistance as high as 80%, both of which arise from carrier scattering at ferromagnetic-nonmagnetic interfaces in LaCoO 3 . Finite-element numerical modeling of electric field distributions is used to explain the dependence of carrier transport behavior on gate contact geometry, and a Valet-Fert transport model enables determination of spin polarization in the LaCoO 3 layer. Piezoresponse force microscopy is used to confirm the existence of piezoelectric response in SrTiO 3 grown on Si (001). It is also shown that this structure offers the possibility of achieving exclusive-NOR logic functionality within a single device

  4. Enhanced magnetoresistance induced by oxygen deficiency in La0.4Ca0.6MnO3-δ oxides

    International Nuclear Information System (INIS)

    Triki, M.; Dhahri, E.; Hlil, E. K.; Garden, J. L.

    2014-01-01

    We report electrical features and magnetoresistance behavior of the oxygen deficient La 0.4 Ca 0.6 MnO 3-δ perovskites (δ = 0, 0.15, and 0.2). These samples will be referred to as S0, S15, and S20, respectively. The dependence of electrical transport on temperature and magnetic field is systematically investigated between 2 K and 400 K in magnetic field ranging up to 5 T. The parent compound shows a stable charge ordering/antiferromagnetic state with a semiconductor-like behavior in all considered temperature range. The variable range hopping and thermally activated hopping models are found to fit well with the electrical resistivity data at low and high temperatures, respectively. Oxygen deficiency tends to weaken the charge ordering and induce ferromagnetism and metallicity at low temperature. Metal insulator transition appears at higher fields for lower oxygen deficit (S15 sample) and without field for the S20 sample. The resistivity data for S15 sample are discussed in the framework of the variable-range hopping model. Abnormal transport properties were observed in the S20 sample, characterized by the double metal-insulator transitions and low minimum behavior. These results are discussed in terms of phenomenological percolation model, based on the phase segregation of ferromagnetic metallic clusters and paramagnetic insulating regions. While the parent compound shows no magnetoresistance, a large magnetoresistance is observed in the deficient samples at low temperature reaching 90% and 75% at 2 T for S15 and S20 samples, respectively. Noticeably, these values reached 98% and 91% at 5 T. The appearance of colossal magnetoresistance is attributed to the spin dependent hopping between spin clusters and/or ferromagnetic domains

  5. Nonlinear, anisotropic, and giant photoconductivity in intrinsic and doped graphene

    Science.gov (United States)

    Singh, Ashutosh; Ghosh, Saikat; Agarwal, Amit

    2018-01-01

    We present a framework to calculate the anisotropic and nonlinear photoconductivity for two band systems with application to graphene. In contrast to the usual perturbative (second order in the optical field strength) techniques, we calculate photoconductivity to all orders in the optical field strength. In particular, for graphene, we find the photoresponse to be giant (at large optical field strengths) and anisotropic. The anisotropic photoresponse in graphene is correlated with polarization of the incident field, with the response being similar to that of a half-wave plate. We predict that the anisotropy in the simultaneous measurement of longitudinal (σx x) and transverse (σy x) photoconductivity, with four probes, offers a unique experimental signature of the photovoltaic response, distinguishing it from the thermal-Seebeck and bolometric effects in photoresponse.

  6. Anisotropic contrast optical microscope.

    Science.gov (United States)

    Peev, D; Hofmann, T; Kananizadeh, N; Beeram, S; Rodriguez, E; Wimer, S; Rodenhausen, K B; Herzinger, C M; Kasputis, T; Pfaunmiller, E; Nguyen, A; Korlacki, R; Pannier, A; Li, Y; Schubert, E; Hage, D; Schubert, M

    2016-11-01

    An optical microscope is described that reveals contrast in the Mueller matrix images of a thin, transparent, or semi-transparent specimen located within an anisotropic object plane (anisotropic filter). The specimen changes the anisotropy of the filter and thereby produces contrast within the Mueller matrix images. Here we use an anisotropic filter composed of a semi-transparent, nanostructured thin film with sub-wavelength thickness placed within the object plane. The sample is illuminated as in common optical microscopy but the light is modulated in its polarization using combinations of linear polarizers and phase plate (compensator) to control and analyze the state of polarization. Direct generalized ellipsometry data analysis approaches permit extraction of fundamental Mueller matrix object plane images dispensing with the need of Fourier expansion methods. Generalized ellipsometry model approaches are used for quantitative image analyses. These images are obtained from sets of multiple images obtained under various polarizer, analyzer, and compensator settings. Up to 16 independent Mueller matrix images can be obtained, while our current setup is limited to 11 images normalized by the unpolarized intensity. We demonstrate the anisotropic contrast optical microscope by measuring lithographically defined micro-patterned anisotropic filters, and we quantify the adsorption of an organic self-assembled monolayer film onto the anisotropic filter. Comparison with an isotropic glass slide demonstrates the image enhancement obtained by our method over microscopy without the use of an anisotropic filter. In our current instrument, we estimate the limit of detection for organic volumetric mass within the object plane of ≈49 fg within ≈7 × 7 μm 2 object surface area. Compared to a quartz crystal microbalance with dissipation instrumentation, where contemporary limits require a total load of ≈500 pg for detection, the instrumentation demonstrated here improves

  7. Simple types of anisotropic inflation

    International Nuclear Information System (INIS)

    Barrow, John D.; Hervik, Sigbjoern

    2010-01-01

    We display some simple cosmological solutions of gravity theories with quadratic Ricci curvature terms added to the Einstein-Hilbert Lagrangian which exhibit anisotropic inflation. The Hubble expansion rates are constant and unequal in three orthogonal directions. We describe the evolution of the simplest of these homogeneous and anisotropic cosmological models from its natural initial state and evaluate the deviations they will create from statistical isotropy in the fluctuations produced during a period of anisotropic inflation. The anisotropic inflation is not a late-time attractor in these models but the rate of approach to a final isotropic de Sitter state is slow and is conducive to the creation of observable anisotropic statistical effects in the microwave background. The statistical anisotropy would not be scale invariant and the level of statistical anisotropy will grow with scale.

  8. Temperature dependence of magnetoresistance in copper single crystals

    Science.gov (United States)

    Bian, Q.; Niewczas, M.

    2018-03-01

    Transverse magnetoresistance of copper single crystals has been measured in the orientation of open-orbit from 2 K to 20 K for fields up to 9 T. The experimental Kohler's plots display deviation between individual curves below 16 K and overlap in the range of 16 K-20 K. The violation of the Kohler's rule below 16 K indicates that the magnetotransport can not be described by the classical theory of electron transport on spherical Fermi surface with a single relaxation time. A theoretical model incorporating two energy bands, spherical and cylindrical, with different relaxation times has been developed to describe the magnetoresistance data. The calculations show that the electron-phonon scattering rates at belly and neck regions of the Fermi surface have different temperature dependencies, and in general, they do not follow T3 law. The ratio of the relaxation times in belly and neck regions decreases parabolically with temperature as A - CT2 , with A and C being constants.

  9. A top-contacted extraordinary magnetoresistance sensor fabricated with an unpatterned semiconductor epilayer

    KAUST Repository

    Sun, Jian

    2013-04-01

    An extraordinary magnetoresistance device is developed from an unpatterned semiconductor epilayer onto which the metal contacts are fabricated. Compared with conventionally fabricated devices, for which semiconductor patterning and precise alignment are required, this design is not only easier from a technological point of view, but it also has the potential to reduce damage introduced to the semiconductor during fabrication. The device shows a similar magnetoresistance ratio as a conventional one but it has a lower sensitivity. Because of the reduced resistance, and hence less noise, high magnetic field resolution is maintained. © 1980-2012 IEEE.

  10. Resonant tunnel magnetoresistance in a double magnetic tunnel junction

    KAUST Repository

    Useinov, Arthur; Useinov, Niazbeck Kh H; Tagirov, Lenar R.; Kosel, Jü rgen

    2011-01-01

    We present quasi-classical approach to calculate a spin-dependent current and tunnel magnetoresistance (TMR) in double magnetic tunnel junctions (DMTJ) FML/I/FMW/I/FMR, where the magnetization of the middle ferromagnetic metal layer FMW can

  11. Superconducting transition and low-field magnetoresistance of a niobium single crystal at 4.2 deg. K; Transition supraconductrice et magnetoresistance en champ faible d'un echantillon monocristallin de niobium a 4.2 deg. K

    Energy Technology Data Exchange (ETDEWEB)

    Perriot, G. [Commissariat a l' Energie Atomique, Saclay (France). Centre d' Etudes Nucleaires. Service de physique du solide et de resonnance magnetique

    1967-01-01

    We report the study of the electrical resistance of a niobium single crystal, at 4.2 deg. K, from the beginning of the superconductive transition to 80 kilo oersteds. Critical fieldsH{sub c2} and H{sub c3} have been determined. Influences on superconductive transition of current density, field-current angle, crystal orientation and magnetoresistance have been studied. Variation laws of low-field transverse and longitudinal magneto-resistances have been determined. (author) [French] La variation de la resistance electrique d'un monocristal cylindrique de niobium a ete etudiee, a 4,2 deg. K, depuis le debut de la transition supraconductrice jusqu'a 80 kilooersteds. Les champs critiques H{sub c2} et H{sub c3} ont ete determines. On a etudie l'influence de la densite de courant, de l'angle champ-courant, de l'anisotropie cristalline et de la magnetoresistance sur la transition supraconductrice. Les lois de variation des magnetoresistances transversale et longitudinale ont ete determinees dans le domaine des champs faibles. (auteur)

  12. Cr doping induced negative transverse magnetoresistance in C d3A s2 thin films

    Science.gov (United States)

    Liu, Yanwen; Tiwari, Rajarshi; Narayan, Awadhesh; Jin, Zhao; Yuan, Xiang; Zhang, Cheng; Chen, Feng; Li, Liang; Xia, Zhengcai; Sanvito, Stefano; Zhou, Peng; Xiu, Faxian

    2018-02-01

    The magnetoresistance of a material conveys various dynamic information about charge and spin carriers, inspiring both fundamental studies in physics and practical applications such as magnetic sensors, data storage, and spintronic devices. Magnetic impurities play a crucial role in the magnetoresistance as they induce exotic states of matter such as the quantum anomalous Hall effect in topological insulators and tunable ferromagnetic phases in dilute magnetic semiconductors. However, magnetically doped topological Dirac semimetals are hitherto lacking. Here, we report a systematic study of Cr-doped C d3A s2 thin films grown by molecular-beam epitaxy. With the Cr doping, C d3A s2 thin films exhibit unexpected negative transverse magnetoresistance and strong quantum oscillations, bearing a trivial Berry's phase and an enhanced effective mass. More importantly, with ionic gating the magnetoresistance of Cr-doped C d3A s2 thin films can be drastically tuned from negative to positive, demonstrating the strong correlation between electrons and the localized spins of the Cr impurities, which we interpret through the formation of magnetic polarons. Such a negative magnetoresistance under perpendicular magnetic field and its gate tunability have not been observed previously in the Dirac semimetal C d3A s2 . The Cr-induced topological phase transition and the formation of magnetic polarons in C d3A s2 provide insights into the magnetic interaction in Dirac semimetals as well as their potential applications in spintronics.

  13. Spin polarization at the interface and tunnel magnetoresistance

    International Nuclear Information System (INIS)

    Itoh, H.; Inoue, J.

    2001-01-01

    We propose that interfacial states of imperfectly oxidized Al ions may exist in ferromagnetic tunnel junctions with Al-O barrier and govern both the spin polarization and tunnel conductance. It is shown that the spin polarization is positive independent of materials and correlates well with the tunnel magnetoresistance

  14. Spin polarized electron tunneling and magnetoresistance in molecular junctions.

    Science.gov (United States)

    Szulczewski, Greg

    2012-01-01

    This chapter reviews tunneling of spin-polarized electrons through molecules positioned between ferromagnetic electrodes, which gives rise to tunneling magnetoresistance. Such measurements yield important insight into the factors governing spin-polarized electron injection into organic semiconductors, thereby offering the possibility to manipulate the quantum-mechanical spin degrees of freedom for charge carriers in optical/electrical devices. In the first section of the chapter a brief description of the Jullière model of spin-dependent electron tunneling is reviewed. Next, a brief description of device fabrication and characterization is presented. The bulk of the review highlights experimental studies on spin-polarized electron tunneling and magnetoresistance in molecular junctions. In addition, some experiments describing spin-polarized scanning tunneling microscopy/spectroscopy on single molecules are mentioned. Finally, some general conclusions and prospectus on the impact of spin-polarized tunneling in molecular junctions are offered.

  15. TOPICAL REVIEW: Tunneling magnetoresistance from a symmetry filtering effect

    Directory of Open Access Journals (Sweden)

    William H Butler

    2008-01-01

    Full Text Available This paper provides a brief overview of the young, but rapidly growing field of spintronics. Its primary objective is to explain how as electrons tunnel through simple insulators such as MgO, wavefunctions of certain symmetries are preferentially transmitted. This symmetry filtering property can be converted into a spin-filtering property if the insulator is joined epitaxially to a ferromagnetic electrode with the same two-dimensional symmetry parallel to the interface. A second requirement of the ferromagnetic electrodes is that a wavefunction with the preferred symmetry exists in one of the two spin channels but not in the other. These requirements are satisfied for electrons traveling perpendicular to the interface for Fe–MgO–Fe tunnel barriers. This leads to a large change in the resistance when the magnetic moment of one of the electrodes is rotated relative to those of the other electrode. This large tunneling magnetoresistance effect is being used as the read sensor in hard drives and may form the basis for a new type of magnetic memory.

  16. Tailoring spin injection and magnetoresistance in ferromagnet/graphene junctions from first principles

    Science.gov (United States)

    Lazic, Predrag; Sipahi, Guilherme; Kawakami, Roland; Zutic, Igor

    2013-03-01

    Recent experimental advances in graphene suggest intriguing opportunities for novel spintronic applications which could significantly exceed the state-of-the art performance of their conventional charge-based counterparts. However, for reliable operation of such spintronic devices it is important to achieve an efficient spin injection and large magnetoresistive effects. We use the first principles calculations to guide the choice of a ferromagnetic region and its relative orientation to optimize the desired effects. We propose structures which could enable uniform spin injection, one of the key factors in implementing scalable spintronic circuits. Supported by NSF-NRI, SRC, ONR, Croatian Ministry of Science, Education, and Sports, and CCR at SUNY UB.

  17. Tunnel magnetoresistance in alumina, magnesia and composite tunnel barrier magnetic tunnel junctions

    International Nuclear Information System (INIS)

    Schebaum, Oliver; Drewello, Volker; Auge, Alexander; Reiss, Guenter; Muenzenberg, Markus; Schuhmann, Henning; Seibt, Michael; Thomas, Andy

    2011-01-01

    Using magnetron sputtering, we have prepared Co-Fe-B/tunnel barrier/Co-Fe-B magnetic tunnel junctions with tunnel barriers consisting of alumina, magnesia, and magnesia-alumina bilayer systems. The highest tunnel magnetoresistance ratios we found were 73% for alumina and 323% for magnesia-based tunnel junctions. Additionally, tunnel junctions with a unified layer stack were prepared for the three different barriers. In these systems, the tunnel magnetoresistance ratios at optimum annealing temperatures were found to be 65% for alumina, 173% for magnesia, and 78% for the composite tunnel barriers. The similar tunnel magnetoresistance ratios of the tunnel junctions containing alumina provide evidence that coherent tunneling is suppressed by the alumina layer in the composite tunnel barrier. - Research highlights: → Transport properties of Co-Fe-B/tunnel barrier/Co-Fe-B magnetic tunnel junctions. → Tunnel barrier consists of MgO, Al-Ox, or MgO/Al-Ox bilayer systems. → Limitation of TMR-ratio in composite barrier tunnel junctions to Al-Ox values. → Limitation indicates that Al-Ox layer is causing incoherent tunneling.

  18. Ternary NiFeX as soft biasing film in a magnetoresistive sensor

    Science.gov (United States)

    Chen, Mao-Min; Gharsallah, Neila; Gorman, Grace L.; Latimer, Jacquie

    1991-04-01

    The properties of NiFeX ternary films (X being Al, Au, Nb, Pd, Pt, Si, and Zr) have been studied for soft-film biasing of the magnetoresistive (MR) trilayer sensor. In general, the addition of the element X into the NiFe alloy film decreases the saturation magnetization Bs and magnetoresistance coefficient of the film, while increasing the film's electrical resistivity ρ. One of the desirable properties of a soft film for biasing is high sheet resistance for minimum current flow. A figure of merit Bsρ that takes into account both the rate of increase in Bs and the rate of decrease in ρ when adding X element was derived to compare the effectiveness of various X elements in reducing the current shunting through the soft-film layer. Using this criterion, NiFeNb and NiFeZr emerge as good soft-film materials having a maximum sheet resistance relative to the MR layer. Other critical properties such as magnetoresistance coefficient, magnetostriction, coercivity, and anisotropy field were also examined and are discussed in this paper.

  19. DNA-nanoparticle superlattices formed from anisotropic building blocks

    Science.gov (United States)

    Jones, Matthew R.; Macfarlane, Robert J.; Lee, Byeongdu; Zhang, Jian; Young, Kaylie L.; Senesi, Andrew J.; Mirkin, Chad A.

    2010-11-01

    Directional bonding interactions in solid-state atomic lattices dictate the unique symmetries of atomic crystals, resulting in a diverse and complex assortment of three-dimensional structures that exhibit a wide variety of material properties. Methods to create analogous nanoparticle superlattices are beginning to be realized, but the concept of anisotropy is still largely underdeveloped in most particle assembly schemes. Some examples provide interesting methods to take advantage of anisotropic effects, but most are able to make only small clusters or lattices that are limited in crystallinity and especially in lattice parameter programmability. Anisotropic nanoparticles can be used to impart directional bonding interactions on the nanoscale, both through face-selective functionalization of the particle with recognition elements to introduce the concept of valency, and through anisotropic interactions resulting from particle shape. In this work, we examine the concept of inherent shape-directed crystallization in the context of DNA-mediated nanoparticle assembly. Importantly, we show how the anisotropy of these particles can be used to synthesize one-, two- and three-dimensional structures that cannot be made through the assembly of spherical particles.

  20. Surface Waves Propagating on Grounded Anisotropic Dielectric Slab

    Directory of Open Access Journals (Sweden)

    Zhuozhu Chen

    2018-01-01

    Full Text Available This paper investigates the characteristics of surface waves propagating on a grounded anisotropic dielectric slab. Distinct from the existing analyses that generally assume that the fields of surface wave uniformly distribute along the transverse direction of the infinitely large grounded slab, our method takes into account the field variations along the transverse direction of a finite-width slab. By solving Maxwell’s equations in closed-form, it is revealed that no pure transverse magnetic (TM or transverse electric (TE mode exists if the fields are non-uniformly distributed along the transverse direction of the grounded slab. Instead, two hybrid modes, namely quasi-TM and quasi-TE modes, are supported. In addition, the propagation characteristics of two hybrid modes supported by the grounded anisotropic slab are analyzed in terms of the slab thickness, slab width, as well as the relative permittivity tensor of the anisotropic slab. Furthermore, different methods are employed to compare the analyses, as well as to validate our derivations. The proposed method is very suitable for practical engineering applications.

  1. Normal state resistance and low temperature magnetoresistance of superconducting cables for accelerator magnets

    International Nuclear Information System (INIS)

    Sampson, W.B.; Garber, M.; Ghosh, A.K.

    1988-01-01

    The normal state resistivity of the superconducting NbTi cable used in accelerator magnets is usually specified by the resistance per unit length at room temperature (295 K) and the residual resistance ratio (RRR). Using these resistance parameters, the amount of copper in the multifilamentary wire can be calculated. This method is consistent with the traditional etch and weigh technique, and as such is a alternative and convenient way of specifying the copper to superconductor ratio. In principle the magnetoresistance can be calculated from the RRR and the ''Kohler Plot'', for copper. In practice however, measurements of magnetoresistance for a wide variety of SSC inner cables show considerable disagreement with calculation. In this paper the magnetoresistance data on cables with RRR ranging from 50 to 175 are analyzed taking into account the conductor geometry and the effect of the small interfilamentary spacing on the resistivity of copper. 8 refs., 5 figs., 1 tab

  2. Tunable electron heating induced giant magnetoresistance in the high mobility GaAs/AlGaAs 2D electron system.

    Science.gov (United States)

    Wang, Zhuo; Samaraweera, R L; Reichl, C; Wegscheider, W; Mani, R G

    2016-12-07

    Electron-heating induced by a tunable, supplementary dc-current (I dc ) helps to vary the observed magnetoresistance in the high mobility GaAs/AlGaAs 2D electron system. The magnetoresistance at B = 0.3 T is shown to progressively change from positive to negative with increasing I dc , yielding negative giant-magnetoresistance at the lowest temperature and highest I dc . A two-term Drude model successfully fits the data at all I dc and T. The results indicate that carrier heating modifies a conductivity correction σ 1 , which undergoes sign reversal from positive to negative with increasing I dc , and this is responsible for the observed crossover from positive- to negative- magnetoresistance, respectively, at the highest B.

  3. Self-consistent study of local and nonlocal magnetoresistance in a YIG/Pt bilayer

    Science.gov (United States)

    Wang, Xi-guang; Zhou, Zhen-wei; Nie, Yao-zhuang; Xia, Qing-lin; Guo, Guang-hua

    2018-03-01

    We present a self-consistent study of the local spin Hall magnetoresistance (SMR) and nonlocal magnon-mediated magnetoresistance (MMR) in a heavy-metal/magnetic-insulator heterostructure at finite temperature. We find that the thermal fluctuation of magnetization significantly affects the SMR. It appears unidirectional with respect to the direction of electrical current (or magnetization). The unidirectionality of SMR originates from the asymmetry of creation or annihilation of thermal magnons induced by the spin Hall torque. Also, a self-consistent model can well describe the features of MMR.

  4. Possibility to explain the temperature distribution in sunspots by an anisotropic heat transfer

    Energy Technology Data Exchange (ETDEWEB)

    Eschrich, K O; Krause, F [Akademie der Wissenschaften der DDR, Potsdam. Zentralinstitut fuer Astrophysik

    1977-01-01

    Numerical solutions of a heat conduction problem in an anisotropic medium are used for a discussion of the possibility to explain the temperature distribution in sunspots and their environment. The anisotropy is assumed being due to the strong magnetic field in sunspots and the region below. This magnetic field forces the convection to take an anisotropic structure (two-dimensional turbulence) and thus the region gets anisotropic conduction properties, on the average. The discussion shows that the observed temperature profiles can be explained in the case the depth of the region of anisotropy is about as large as the diameter of the spot or larger.

  5. Specific features of magnetoresistance during the antiferromagnet—paramagnet transition in Tm1−xYbxB12

    International Nuclear Information System (INIS)

    Sluchanko, N. E.; Azarevich, A. N.; Bogach, A. V.; Glushkov, V. V.; Demishev, S. V.; Levchenko, A. V.; Filippov, V. B.; Shitsevalova, N. Yu.

    2013-01-01

    The transverse magnetoresistance Δρ/ρ(H, T) of Tm 1−x Yb x B 12 single crystals is studied in the ytterbium concentration range corresponding to the antiferromagnet-paramagnet transition in a magnetic field up to 80 kOe at low temperatures. A magnetic H-T phase diagram is constructed for the antiferromagnetic state of substitutional Tm 1−x Yb x B 12 solid solutions with x ≤ 0.1. The contributions to the magnetoresistance in the antiferromagnetic and paramagnetic phases of the dodecaborides under study are separated. Along with negative quadratic magnetoresistance -Δρ/ρ ∝ H 2 , the magnetically ordered phase of these compounds is found to have component Δρ/ρ ∝ H that linearly changes in a magnetic field. The negative contribution to the magnetoresistance of Tm 1−x Yb x B 12 is analyzed in terms of the Yosida model for a local magnetic susceptibility.

  6. On-line irradiation testing of a Giant Magneto-Resistive (GMR) sensor

    Energy Technology Data Exchange (ETDEWEB)

    Olfert, J.; Luloff, B.; MacDonald, D.; Lumsden, R., E-mail: jeff.olfert@cnl.ca [Canadian Nuclear Laboratories, Chalk River, Ontario (Canada)

    2016-06-15

    Magneto-resistive sensors are rapidly gaining favour for magnetic field sensing applications owing to their high sensitivity, small size, and low cost. Their metallic, nonsemiconductor construction makes them excellent candidates for use in the harsh environments present in nuclear and space applications. In this work, a commercially available magneto-resistive sensor was irradiated up to a total gamma dose of 2 MGy (200 Mrad), and online testing was performed to monitor the sensor throughout the irradiation to detect any degradation. No significant evidence of degradation of the sensor characteristics was observed. A very small (< 1%) change in the bridge balance of the sensor as a function of accumulated dose was detected. (author)

  7. Temperature dependence of the resistivity and tunneling magnetoresistance of sputtered FeHf(Si)O cermet films

    NARCIS (Netherlands)

    Strijkers, G.J.; Swagten, H.J.M.; Rulkens, B.; Bitter, R.H.J.N.; Jonge, de W.J.M.; Bloemen, P.J.H.; Schep, K.M.

    1998-01-01

    We have studied the tunneling resistivity and magnetoresistance of reactive sputter deposited FeHfO and FeHfSiO thin granular films. Maximum magnetoresistance ratios at room temperature of 2% and 3.2% were observed for films with compositions of Fe47Hf10O43 and Fe40Hf6Si6O48, respectively. The

  8. Anisotropic cosmological constant and the CMB quadrupole anomaly

    International Nuclear Information System (INIS)

    Rodrigues, Davi C.

    2008-01-01

    There are evidences that the cosmic microwave background (CMB) large-angle anomalies imply a departure from statistical isotropy and hence from the standard cosmological model. We propose a ΛCDM model extension whose dark energy component preserves its nondynamical character but wields anisotropic vacuum pressure. Exact solutions for the cosmological scale factors are presented, upper bounds for the deformation parameter are evaluated and its value is estimated considering the elliptical universe proposal to solve the quadrupole anomaly. This model can be constructed from a Bianchi I cosmology with a cosmological constant from two different ways: (i) a straightforward anisotropic modification of the vacuum pressure consistently with energy-momentum conservation; (ii) a Poisson structure deformation between canonical momenta such that the dynamics remain invariant under scale factors rescalings

  9. Magnetoresistance in spin glass alloys: Theory and experiment

    International Nuclear Information System (INIS)

    Mookerjee, A.; Chowdhury, D.

    1984-11-01

    The magnetoresistance of spin glass alloys is examined within the percolation model of Mookerjee and Chowdhury (1983), the mode freezing model of Hertz (1983) and the constrained relaxation model of Palmer et al. (1984). All three models yield qualitatively similar results in excellent agreement with the experiments of Majumdar (1983, 1984) on AgMn. (author)

  10. Separating positive and negative magnetoresistance in organic semiconductor devices

    NARCIS (Netherlands)

    Bloom, F.L.; Wagemans, W.; Kemerink, M.; Koopmans, B.

    2007-01-01

    We study the transition between positive and negative organic magnetoresistance (OMAR) in tris-(8 hydroxyquinoline) aluminium (Alq3), in order to identify the elementary mechanisms governing this phenomenon. We show how the sign of OMAR changes as function of the applied voltage and temperature. The

  11. Room temperature giant and linear magnetoresistance in topological insulator Bi2Te3 nanosheets.

    Science.gov (United States)

    Wang, Xiaolin; Du, Yi; Dou, Shixue; Zhang, Chao

    2012-06-29

    Topological insulators, a new class of condensed matter having bulk insulating states and gapless metallic surface states, have demonstrated fascinating quantum effects. However, the potential practical applications of the topological insulators are still under exploration worldwide. We demonstrate that nanosheets of a Bi(2)Te(3) topological insulator several quintuple layers thick display giant and linear magnetoresistance. The giant and linear magnetoresistance achieved is as high as over 600% at room temperature, with a trend towards further increase at higher temperatures, as well as being weakly temperature-dependent and linear with the field, without any sign of saturation at measured fields up to 13 T. Furthermore, we observed a magnetic field induced gap below 10 K. The observation of giant and linear magnetoresistance paves the way for 3D topological insulators to be useful for practical applications in magnetoelectronic sensors such as disk reading heads, mechatronics, and other multifunctional electromagnetic applications.

  12. Correlation between magnetoresistance and magnetization in Ag Mn and Au Mn spin glasses

    International Nuclear Information System (INIS)

    Majumdar, A.K.

    1982-08-01

    Magnetization has been measured between 2 and 77 K and mostly up to fields of 20 K Oe in Ag Mn (1.1 and 5.4 at %) and Au Mn (1.8 and 4.6 at %) spin glass samples where the transverse magnetoresistance was measured earlier. It is found for the first time over a wide range of temperature and magnetic field that the negative magnetoresistance varies as the square of the bulk magnetization resulting in an universal curve in the spin glass regime. A theoretical justification is provided in terms of exciting theories. (author)

  13. Anisotropic magnetoresistance in an antiferromagnetic semiconductor

    Czech Academy of Sciences Publication Activity Database

    Fina, I.; Martí, Xavier; Yi, D.; Liu, J.; Chu, J.-H.; Rayan-Serrao, C.; Suresha, S.; Shick, Alexander; Železný, Jakub; Jungwirth, Tomáš; Fontcuberta, J.; Ramesh, R.

    2014-01-01

    Roč. 5, SEP (2014), "4671-1"-"4671-7" ISSN 2041-1723 R&D Projects: GA MŠk(CZ) LM2011026; GA ČR GB14-37427G; GA ČR(CZ) GAP204/10/0330 EU Projects: European Commission(XE) 268066 - 0MSPIN Grant - others:AV ČR(CZ) AP0801 Program:Akademická prémie - Praemium Academiae Institutional support: RVO:68378271 Keywords : antiferromagnets * semiconductors * spintronics Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 11.470, year: 2014

  14. Damping constant measurement and inverse giant magnetoresistance in spintronic devices with Fe4N

    Directory of Open Access Journals (Sweden)

    Xuan Li

    2017-12-01

    Full Text Available Fe4N is one of the attractive materials for spintronic devices due to its large spin asymmetric conductance and negative spin polarization at the Fermi level. We have successfully deposited Fe4N thin film with (001 out-of-plane orientation using a DC facing-target-sputtering system. A Fe(001/Ag(001 composite buffer layer is selected to improve the (001 orientation of the Fe4N thin film. The N2 partial pressure during sputtering is optimized to promote the formation of Fe4N phase. Moreover, we have measured the ferromagnetic resonance (FMR of the (001 oriented Fe4N thin film using coplanar waveguides and microwave excitation. The resonant fields are tested under different microwave excitation frequencies, and the experimental results match well with the Kittel formula. The Gilbert damping constant of Fe4N is determined to be α = 0.021±0.02. We have also fabricated and characterized the current-perpendicular-to-plane (CPP giant magnetoresistance (GMR device with Fe4N/Ag/Fe sandwich. Inverse giant magnetoresistance is observed in the CPP GMR device, which suggests that the spin polarization of Fe4N and Fe4N/Ag interface is negative.

  15. Gigantic negative magnetoresistance in the bulk of a disordered topological insulator

    Science.gov (United States)

    Breunig, Oliver; Wang, Zhiwei; Taskin, A. A.; Lux, Jonathan; Rosch, Achim; Ando, Yoichi

    2017-05-01

    With the recent discovery of Weyl semimetals, the phenomenon of negative magnetoresistance (MR) is attracting renewed interest. Large negative MR is usually related to magnetism, but the chiral anomaly in Weyl semimetals is a rare exception. Here we report a mechanism for large negative MR which is also unrelated to magnetism but is related to disorder. In the nearly bulk-insulating topological insulator TlBi0.15Sb0.85Te2, we observed gigantic negative MR reaching 98% in 14 T at 10 K, which is unprecedented in a nonmagnetic system. Supported by numerical simulations, we argue that this phenomenon is likely due to the Zeeman effect on a barely percolating current path formed in the disordered bulk. Since disorder can also lead to non-saturating linear MR in Ag2+δSe, the present finding suggests that disorder engineering in narrow-gap systems is useful for realizing gigantic MR in both positive and negative directions.

  16. Gigantic negative magnetoresistance in the bulk of a disordered topological insulator

    Science.gov (United States)

    Breunig, Oliver; Wang, Zhiwei; Taskin, A A; Lux, Jonathan; Rosch, Achim; Ando, Yoichi

    2017-01-01

    With the recent discovery of Weyl semimetals, the phenomenon of negative magnetoresistance (MR) is attracting renewed interest. Large negative MR is usually related to magnetism, but the chiral anomaly in Weyl semimetals is a rare exception. Here we report a mechanism for large negative MR which is also unrelated to magnetism but is related to disorder. In the nearly bulk-insulating topological insulator TlBi0.15Sb0.85Te2, we observed gigantic negative MR reaching 98% in 14 T at 10 K, which is unprecedented in a nonmagnetic system. Supported by numerical simulations, we argue that this phenomenon is likely due to the Zeeman effect on a barely percolating current path formed in the disordered bulk. Since disorder can also lead to non-saturating linear MR in Ag2+δSe, the present finding suggests that disorder engineering in narrow-gap systems is useful for realizing gigantic MR in both positive and negative directions. PMID:28541291

  17. Signature of the magnetic transitions in Y0.2Pr0.8Ba2Cu3O7-δ in high field angular magnetoresistivity

    International Nuclear Information System (INIS)

    Sandu, V; Zhang, C; Almasan, C C; Taylor, B J; Maple, M B

    2006-01-01

    In-plane (ab) and out-of-plane (c-axis) magnetoresistivity display different symmetry crossovers and/or transitions in 14 T magnetic field applied parallel to the CuO 2 planes. The in-plane magnetoresistivity crosses over from four-fold symmetry below 6 K to two-fold symmetry at higher temperatures, which becomes dominant at temperatures higher than 40 K. The out-of-plane magnetoresistivity changes at 17 K from four fold symmetry to ordinary sin 2 θ at higher temperatures. The behaviour of the c-axis magnetoresistivity can be ascribed to the antiferromagnetic ordering of the Pr spins whereas the symmetry change of the in-plane magnetoresistivity at 6 K might be attributed to commensurate to incommensurate crossovers of the spin subsystems. The antiferromagnetic order of the Cu(2) sublattice seems to have only a week effect on the magnetoresistivity

  18. Longitudinal fluctuations and decorrelation of anisotropic flow

    Energy Technology Data Exchange (ETDEWEB)

    Pang, Long-Gang [Frankfurt Institute for Advanced Studies, Ruth-Moufang-Strasse 1, 60438 Frankfurt am Main (Germany); Petersen, Hannah [Frankfurt Institute for Advanced Studies, Ruth-Moufang-Strasse 1, 60438 Frankfurt am Main (Germany); Institute for Theoretical Physics, Goethe University, Max-von-Laue-Strasse 1, 60438 Frankfurt am Main (Germany); GSI Helmholtzzentrum für Schwerionenforschung, Planckstr. 1, 64291 Darmstadt (Germany); Qin, Guang-You [Key Laboratory of Quark & Lepton Physics (MOE) and Institute of Particle Physics, Central China Normal University, Wuhan 430079 (China); Roy, Victor [Institute for Theoretical Physics, Goethe University, Max-von-Laue-Strasse 1, 60438 Frankfurt am Main (Germany); Wang, Xin-Nian [Key Laboratory of Quark & Lepton Physics (MOE) and Institute of Particle Physics, Central China Normal University, Wuhan 430079 (China); Nuclear Science Division MS70R0319, Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States)

    2016-12-15

    We investigate the decorrelation of 2nd and 3rd order anisotropic flow for charged particles in two different pseudo rapidity (η) windows by varying the pseudo rapidity gap, in an event-by-event (3+1)D ideal hydrodynamic model, with fluctuating initial conditions from A Multi-Phase Transport (AMPT) model. We visualize the parton distribution at initial state for Pb+Pb collisions at LHC and Au+Au collisions at RHIC, and demonstrate the longitudinal fluctuations originating from the asymmetry between forward and backward going participants, the fluctuations of the string length and the fluctuations due to finite number of partons at different beam energies. The decorrelation of anisotropic flow of final hadrons with large η gaps is found to originate from the spatial decorrelation along the longitudinal direction in the AMPT initial conditions through hydrodynamic evolution. The agreement between our results and recent CMS data in most centralities suggests that the string-like mechanism of initial parton production in AMPT model captures the initial longitudinal fluctuation that is responsible for the measured decorrelation of anisotropic flow in Pb+Pb collisions at LHC. Our predictions for Au+Au collisions at the highest RHIC energy show stronger longitudinal decorrelation than at LHC, indicating larger longitudinal fluctuations at lower beam energies.

  19. A Practical Computational Method for the Anisotropic Redshift-Space 3-Point Correlation Function

    Science.gov (United States)

    Slepian, Zachary; Eisenstein, Daniel J.

    2018-04-01

    We present an algorithm enabling computation of the anisotropic redshift-space galaxy 3-point correlation function (3PCF) scaling as N2, with N the number of galaxies. Our previous work showed how to compute the isotropic 3PCF with this scaling by expanding the radially-binned density field around each galaxy in the survey into spherical harmonics and combining these coefficients to form multipole moments. The N2 scaling occurred because this approach never explicitly required the relative angle between a galaxy pair about the primary galaxy. Here we generalize this work, demonstrating that in the presence of azimuthally-symmetric anisotropy produced by redshift-space distortions (RSD) the 3PCF can be described by two triangle side lengths, two independent total angular momenta, and a spin. This basis for the anisotropic 3PCF allows its computation with negligible additional work over the isotropic 3PCF. We also present the covariance matrix of the anisotropic 3PCF measured in this basis. Our algorithm tracks the full 5-D redshift-space 3PCF, uses an accurate line of sight to each triplet, is exact in angle, and easily handles edge correction. It will enable use of the anisotropic large-scale 3PCF as a probe of RSD in current and upcoming large-scale redshift surveys.

  20. High field magnetoresistance in Co-Al-O nanogranular films

    Czech Academy of Sciences Publication Activity Database

    Chayka, Oleksandr; Kraus, Luděk; Lobotka, P.; Sechovsky, V.; Kocourek, Tomáš; Jelínek, Miroslav

    2006-01-01

    Roč. 300, - (2006), s. 293-299 ISSN 0304-8853 R&D Projects: GA AV ČR(CZ) IAA1010204 Institutional research plan: CEZ:AV0Z10100520 Keywords : granular system * superparamagnetism * tunneling magnetoresistance Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.212, year: 2006

  1. Investigation of the magnetic properties of electrodeposited NiFe thin films

    International Nuclear Information System (INIS)

    Bakkaloglu, O. F.; Bedir, M.; Oeztas, M.; Karahan, I. H.

    2002-01-01

    Most magnetic devices used today are based on the magnetic thin film. Rapid and extensive developments in magnetic sensor / actuator and magnetic recording technology place a growing demand on the use of different thin film fabrication techniques for magnetic materials. The electroplating technique is especially interesting due to its low cost, high throughput and high quality of the deposits which are extensively used in the magnetic recording industry to deposit relatively thick permalloy layers. Much recent attention has focused on the electrodeposited NiFe thin films, which exhibit giant magneto resistive behaviour as well as anisotropic magnetoresistance properties. n this study, NiFe thin films were developed by using electrodeposition technique and their crystallinity structures were investigated by using x-ray diffractometer measurements. The magneto resistive properties of the samples were investigated by Wan der Pauw method with a home made electromagnet under the different magnetic fields. The magnetoresistance measurements of the samples were carried out in two configurations; current parallel ( longitudinal ) and perpendicular ( transverse ) to the magnetic field. In the longitudinal configuration giant magnetoresistance was observed while anisotropic magnetoresistance was detected in the other configuration

  2. Anisotropic Characteristics of Turbulence Dissipation in Swirling Flow: A Direct Numerical Simulation Study

    Directory of Open Access Journals (Sweden)

    Xingtuan Yang

    2015-01-01

    Full Text Available This study investigates the anisotropic characteristics of turbulent energy dissipation rate in a rotating jet flow via direct numerical simulation. The turbulent energy dissipation tensor, including its eigenvalues in the swirling flows with different rotating velocities, is analyzed to investigate the anisotropic characteristics of turbulence and dissipation. In addition, the probability density function of the eigenvalues of turbulence dissipation tensor is presented. The isotropic subrange of PDF always exists in swirling flows relevant to small-scale vortex structure. Thus, with remarkable large-scale vortex breakdown, the isotropic subrange of PDF is reduced in strongly swirling flows, and anisotropic energy dissipation is proven to exist in the core region of the vortex breakdown. More specifically, strong anisotropic turbulence dissipation occurs concentratively in the vortex breakdown region, whereas nearly isotropic turbulence dissipation occurs dispersively in the peripheral region of the strong swirling flows.

  3. Giant magnetoresistance effect in CoZr/Cu/Co spin-valve films (abstract)

    Energy Technology Data Exchange (ETDEWEB)

    Ben-Youssef, J. [CNRS-LMIMS, 92195 Meudon-Bellevue (France)]|[LPM Universite Mohammed V, Rabat (Morocco); Koshkina, O.; Le Gall, H. [CNRS-LMIMS, 92195 Meudon-Bellevue (France); Harfaoui, M.E. [LPMC Universite Ibn Tofail Kenitra (Morocco); Bouziane, K. [CNRS-LMIMS, 92195 Meudon-Bellevue (France); Yamani, M.E. [LPM Universite Mohammed V, Rabat (Morocco); Desvignes, J.M. [CNRS-LMIMS, 92195 Meudon-Bellevue (France)

    1997-04-01

    A high sensitivity of giant magnetoresistance (GMR) has been observed recently from soft magnetic layers such as NiFe, NiFeCo, and FeCoB. Amorphous CoZr alloys present ultrasoft properties compared to NiFe. GMR has been investigated for amorphous CoZr/Cu/Co thin films grown by rf diode sputtering using a target consisting of a Co disk partially covered with a Zr foil. The influence of the argon pressure on Cu layer deposition, Cu thickness, and Zr content on magnetic and transport properties was analyzed. The highest value of transverse GMR obtained along the easy axis is 3.6{percent} and the MR curve was saturated in a magnetic field of 100 Oe at room temperature. GMR shows scaling behavior with the sample composition. Very high sensitivity, around 1{endash}2{percent}/Oe was observed in a CoZr (3 nm)/Cu (3 nm)/Co (2 nm) sandwich. This study shows a large dependence of GMR on Cu thickness and the maximum of magnetoresistance strongly depending on the Ar pressure which modifies the interface roughness. The Zr content also influences the magnetotransport properties ({Delta}R/R and {Delta}R/R{Delta}H). The difference in coercivity between soft magnetic CoZr and hard magnetic Co layers induces antiferromagnetic alignment. Therefore a high MR ratio and field sensitivity are achieved by improving the magnetic properties of the CoZr layer.{copyright} {ital 1997 American Institute of Physics.}

  4. Double-grooved nanofibre surfaces with enhanced anisotropic hydrophobicity.

    Science.gov (United States)

    Liang, Meimei; Chen, Xin; Xu, Yang; Zhu, Lei; Jin, Xiangyu; Huang, Chen

    2017-11-02

    This study reports a facile method for fabricating double-grooved fibrous surfaces. The primary grooves of the surface are formed by aligned fibres, while the secondary grooves are achieved by oriented nanogrooves on the fibre surface. Investigation into the formation mechanism reveals that the nanogrooves can be readily tailored through adjusting the solvent ratio and relative humidity. With this understanding, a variety of polymers have been successfully electrospun into fibres having the same nanogrooved feature. These fibres show high resemblance to natural hierarchical structures, and thereby endowing the corresponding double-grooved surface with enhanced anisotropic hydrophobicity. A water droplet at a parallel direction to the grooves exhibits a much higher contact angle and a lower roll-off angle than the droplet at a perpendicular direction. The application potential of such anisotropic hydrophobicity has been demonstrated via a fog collection experiment, in which the double-grooved surface can harvest the largest amount of water. Moreover, the fabrication method requires neither post-treatment nor sophisticated equipment, making us anticipate that the double-grooved surface would be competitive in areas where a highly ordered surface, a large surface area and an anisotropic hydrophobicity are preferred.

  5. Termination layer compensated tunnelling magnetoresistance in ferrimagnetic Heusler compounds with high perpendicular magnetic anisotropy.

    Science.gov (United States)

    Jeong, Jaewoo; Ferrante, Yari; Faleev, Sergey V; Samant, Mahesh G; Felser, Claudia; Parkin, Stuart S P

    2016-01-18

    Although high-tunnelling spin polarization has been observed in soft, ferromagnetic, and predicted for hard, ferrimagnetic Heusler materials, there has been no experimental observation to date of high-tunnelling magnetoresistance in the latter. Here we report the preparation of highly textured, polycrystalline Mn3Ge films on amorphous substrates, with very high magnetic anisotropy fields exceeding 7 T, making them technologically relevant. However, the small and negative tunnelling magnetoresistance that we find is attributed to predominant tunnelling from the lower moment Mn-Ge termination layers that are oppositely magnetized to the higher moment Mn-Mn layers. The net spin polarization of the current reflects the different proportions of the two distinct termination layers and their associated tunnelling matrix elements that result from inevitable atomic scale roughness. We show that by engineering the spin polarization of the two termination layers to be of the same sign, even though these layers are oppositely magnetized, high-tunnelling magnetoresistance is possible.

  6. Elastic and electronic tuning of magnetoresistance in MoTe2.

    Science.gov (United States)

    Yang, Junjie; Colen, Jonathan; Liu, Jun; Nguyen, Manh Cuong; Chern, Gia-Wei; Louca, Despina

    2017-12-01

    Quasi-two-dimensional transition metal dichalcogenides exhibit dramatic properties that may transform electronic and photonic devices. We report on how the anomalously large magnetoresistance (MR) observed under high magnetic field in MoTe 2 , a type II Weyl semimetal, can be reversibly controlled under tensile strain. The MR is enhanced by as much as ~30% at low temperatures and high magnetic fields when uniaxial strain is applied along the a crystallographic direction and reduced by about the same amount when strain is applied along the b direction. We show that the large in-plane electric anisotropy is coupled with the structural transition from the 1T' monoclinic to the T d orthorhombic Weyl phase. A shift of the T d -1T' phase boundary is achieved by minimal tensile strain. The sensitivity of the MR to tensile strain suggests the possibility of a nontrivial spin-orbital texture of the electron and hole pockets in the vicinity of Weyl points. Our ab initio calculations show a significant orbital mixing on the Fermi surface, which is modified by the tensile strains.

  7. Intrinsic spin-relaxation induced negative tunnel magnetoresistance in a single-molecule magnet

    Science.gov (United States)

    Xie, Haiqing; Wang, Qiang; Xue, Hai-Bin; Jiao, HuJun; Liang, J.-Q.

    2013-06-01

    We investigate theoretically the effects of intrinsic spin-relaxation on the spin-dependent transport through a single-molecule magnet (SMM), which is weakly coupled to ferromagnetic leads. The tunnel magnetoresistance (TMR) is obtained by means of the rate-equation approach including not only the sequential but also the cotunneling processes. It is shown that the TMR is strongly suppressed by the fast spin-relaxation in the sequential region and can vary from a large positive to slight negative value in the cotunneling region. Moreover, with an external magnetic field along the easy-axis of SMM, a large negative TMR is found when the relaxation strength increases. Finally, in the high bias voltage limit the TMR for the negative bias is slightly larger than its characteristic value of the sequential region; however, it can become negative for the positive bias caused by the fast spin-relaxation.

  8. Low-field microwave absorption and magnetoresistance in iron nanostructures grown by electrodeposition on n-type lightly doped silicon substrates

    Energy Technology Data Exchange (ETDEWEB)

    Felix, J.F. [Universidade Federal de Viçosa-UFV, Departamento de Física, 36570-900 Viçosa, MG (Brazil); Universidade de Brasília-UnB, Instituto de Física, Núcleo de Física Aplicada, 70910-900 Brasília, DF (Brazil); Figueiredo, L.C. [Universidade de Brasília-UnB, Instituto de Física, Núcleo de Física Aplicada, 70910-900 Brasília, DF (Brazil); Mendes, J.B.S. [Universidade Federal de Viçosa-UFV, Departamento de Física, 36570-900 Viçosa, MG (Brazil); Morais, P.C. [Universidade de Brasília-UnB, Instituto de Física, Núcleo de Física Aplicada, 70910-900 Brasília, DF (Brazil); Huazhong University of Science and Technology, School of Automation, 430074 Wuhan (China); Araujo, C.I.L. de., E-mail: dearaujo@ufv.br [Universidade de Brasília-UnB, Instituto de Física, Núcleo de Física Aplicada, 70910-900 Brasília, DF (Brazil)

    2015-12-01

    In this study we investigate magnetic properties, surface morphology and crystal structure in iron nanoclusters electrodeposited on lightly doped (100) n-type silicon substrates. Our goal is to investigate the spin injection and detection in the Fe/Si lateral structures. The samples obtained under electric percolation were characterized by magnetoresistive and magnetic resonance measurements with cycling the sweeping applied field in order to understand the spin dynamics in the as-produced samples. The observed hysteresis in the magnetic resonance spectra, plus the presence of a broad peak in the non-saturated regime confirming the low field microwave absorption (LFMA), were correlated to the peaks and slopes found in the magnetoresistance curves. The results suggest long range spin injection and detection in low resistive silicon and the magnetic resonance technique is herein introduced as a promising tool for analysis of electric contactless magnetoresistive samples. - Highlights: • Electrodeposition of Fe nanostructures on high resistive silicon substrates. • Spin polarized current among clusters through Si suggested by isotropic magnetoresistance. • Low field microwave absorption arising from the sample shape anisotropy. • Contactless magnetoresistive device characterization by resonance measurements.

  9. Hall effects and related phenomena in disordered Rashba 2DEG

    International Nuclear Information System (INIS)

    Inoue, Jun-ichiro; Kato, Takashi; Bauer, Gerrit E W; Molenkamp, Laurens W

    2009-01-01

    We review our recent work on the spin and anomalous Hall effects and other related phenomena caused by the intrinsic spin–orbit interaction. We focus our attention on disorder effects on these transport properties by adopting a model of a two-dimensional electron gas with a Rashba-type spin–orbit interaction. A spin-polarized model is adopted to calculate the anomalous Hall effect and anisotropic magnetoresistance. It is shown that the spin Hall conductivity in the ballistic transport regime is cancelled by the so-called vertex corrections for the disorder scattering, and that the anomalous Hall conductivity and anisotropic magnetoresistance vanish unless the lifetime is spin dependent. We further present results on spin accumulation under an electric field

  10. Resistivity and magnetoresistivity of amorphous rare-earth alloys

    Science.gov (United States)

    Borchi, E.; Poli, M.; De Gennaro, S.

    1982-05-01

    The resistivity and magnetoresistivity of amorphous rare-earth alloys are studied starting from the general approach of Van Peski-Tinbergen and Dekker. The random axial crystal-field and the magnetic correlations between the rare-earth ions are consistently taken into account. The characteristic features of the available experimental data are explained both of the case of random ferromagnetic and antiferromagnetic order.

  11. Inhomogeneous anisotropic cosmology

    International Nuclear Information System (INIS)

    Kleban, Matthew; Senatore, Leonardo

    2016-01-01

    In homogeneous and isotropic Friedmann-Robertson-Walker cosmology, the topology of the universe determines its ultimate fate. If the Weak Energy Condition is satisfied, open and flat universes must expand forever, while closed cosmologies can recollapse to a Big Crunch. A similar statement holds for homogeneous but anisotropic (Bianchi) universes. Here, we prove that arbitrarily inhomogeneous and anisotropic cosmologies with “flat” (including toroidal) and “open” (including compact hyperbolic) spatial topology that are initially expanding must continue to expand forever at least in some region at a rate bounded from below by a positive number, despite the presence of arbitrarily large density fluctuations and/or the formation of black holes. Because the set of 3-manifold topologies is countable, a single integer determines the ultimate fate of the universe, and, in a specific sense, most 3-manifolds are “flat” or “open”. Our result has important implications for inflation: if there is a positive cosmological constant (or suitable inflationary potential) and initial conditions for the inflaton, cosmologies with “flat” or “open” topology must expand forever in some region at least as fast as de Sitter space, and are therefore very likely to begin inflationary expansion eventually, regardless of the scale of the inflationary energy or the spectrum and amplitude of initial inhomogeneities and gravitational waves. Our result is also significant for numerical general relativity, which often makes use of periodic (toroidal) boundary conditions.

  12. Anisotropic light diffraction in crystals with a large acoustic-energy walk-off

    Science.gov (United States)

    Balakshy, V. I.; Voloshin, A. S.; Molchanov, V. Ya.

    2014-11-01

    The influence of energy walk-off in an acoustic beam on the characteristic of anisotropic Bragg diffraction of light has been investigated by the example of paratellurite crystal. The angular and frequency characteristics of acousto-optic diffraction have been calculated in wide ranges of ultrasound frequencies and Bragg angles using the modified Raman-Nath equations. It is shown that the walk-off of an acoustic beam may change (either widen or narrow) significantly the frequency and angular ranges. The calculation results have been experimentally checked on an acousto-optic cell made of 10.5°-cut paratellurite crystal.

  13. Size effects under a strong magnetic field: transverse magnetoresistance of thin gold films deposited on mica

    International Nuclear Information System (INIS)

    Munoz, Raul C; HenrIquez, Ricardo; GarcIa, Juan Pablo; Moncada, Ana MarIa; Espinosa, Andres; Robles, Marcelo; Kremer, German; Moraga, Luis; Cancino, Simon; Morales, Jose Roberto; RamIrez, Adan; Oyarzun, Simon; Suarez, Marco Antonio; Chen, David; Zumelzu, Ernesto; Lizama, Claudio

    2006-01-01

    We report measurements of transverse magnetoresistance where the signal can be attributed to electron-surface scattering, together with measurements of the surface roughness of the films on an atomic scale. The measurements were performed with a scanning tunnelling microscope (STM) on four thin gold films evaporated onto mica. The magnetoresistance exhibits a marked thickness dependence: at 4 K and 9 T is about 5% for the thinner (69 nm) film, and about 14% for the thicker (185 nm) film. Sondheimer's theory provides an accurate description of the temperature dependence of the resistivity, but predicts a magnetoresistance one order of magnitude smaller than that observed at 4 K. Calecki's theory in the limit of small roughness correlation length, predicts a resistivity two orders of magnitude larger than observed at 4 K

  14. Low field magnetoresistance in a 2D topological insulator based on wide HgTe quantum well.

    Science.gov (United States)

    Olshanetsky, E B; Kvon, Z D; Gusev, G M; Mikhailov, N N; Dvoretsky, S A

    2016-09-01

    Low field magnetoresistance is experimentally studied in a two-dimensional topological insulator (TI) in both diffusive and quasiballistic samples fabricated on top of a wide (14 nm) HgTe quantum well. In all cases a pronounced quasi-linear positive magnetoresistance is observed similar to that found previously in diffusive samples based on a narrow (8 nm) HgTe well. The experimental results are compared with the main existing theoretical models based on different types of disorder: sample edge roughness, nonmagnetic disorder in an otherwise coherent TI and metallic puddles due to locally trapped charges that act like local gate on the sample. The quasiballistic samples with resistance close to the expected quantized values also show a positive low-field magnetoresistance but with a pronounced admixture of mesoscopic effects.

  15. Efficient Wavefield Extrapolation In Anisotropic Media

    KAUST Repository

    Alkhalifah, Tariq; Ma, Xuxin; Waheed, Umair bin; Zuberi, Mohammad Akbar Hosain

    2014-01-01

    Various examples are provided for wavefield extrapolation in anisotropic media. In one example, among others, a method includes determining an effective isotropic velocity model and extrapolating an equivalent propagation of an anisotropic, poroelastic or viscoelastic wavefield. The effective isotropic velocity model can be based upon a kinematic geometrical representation of an anisotropic, poroelastic or viscoelastic wavefield. Extrapolating the equivalent propagation can use isotopic, acoustic or elastic operators based upon the determined effective isotropic velocity model. In another example, non-transitory computer readable medium stores an application that, when executed by processing circuitry, causes the processing circuitry to determine the effective isotropic velocity model and extrapolate the equivalent propagation of an anisotropic, poroelastic or viscoelastic wavefield. In another example, a system includes processing circuitry and an application configured to cause the system to determine the effective isotropic velocity model and extrapolate the equivalent propagation of an anisotropic, poroelastic or viscoelastic wavefield.

  16. Efficient Wavefield Extrapolation In Anisotropic Media

    KAUST Repository

    Alkhalifah, Tariq

    2014-07-03

    Various examples are provided for wavefield extrapolation in anisotropic media. In one example, among others, a method includes determining an effective isotropic velocity model and extrapolating an equivalent propagation of an anisotropic, poroelastic or viscoelastic wavefield. The effective isotropic velocity model can be based upon a kinematic geometrical representation of an anisotropic, poroelastic or viscoelastic wavefield. Extrapolating the equivalent propagation can use isotopic, acoustic or elastic operators based upon the determined effective isotropic velocity model. In another example, non-transitory computer readable medium stores an application that, when executed by processing circuitry, causes the processing circuitry to determine the effective isotropic velocity model and extrapolate the equivalent propagation of an anisotropic, poroelastic or viscoelastic wavefield. In another example, a system includes processing circuitry and an application configured to cause the system to determine the effective isotropic velocity model and extrapolate the equivalent propagation of an anisotropic, poroelastic or viscoelastic wavefield.

  17. Giant Negative Magnetoresistance Driven by Spin-Orbit Coupling at the LaAlO3/SrTiO3 Interface.

    Science.gov (United States)

    Diez, M; Monteiro, A M R V L; Mattoni, G; Cobanera, E; Hyart, T; Mulazimoglu, E; Bovenzi, N; Beenakker, C W J; Caviglia, A D

    2015-07-03

    The LaAlO3/SrTiO3 interface hosts a two-dimensional electron system that is unusually sensitive to the application of an in-plane magnetic field. Low-temperature experiments have revealed a giant negative magnetoresistance (dropping by 70%), attributed to a magnetic-field induced transition between interacting phases of conduction electrons with Kondo-screened magnetic impurities. Here we report on experiments over a broad temperature range, showing the persistence of the magnetoresistance up to the 20 K range--indicative of a single-particle mechanism. Motivated by a striking correspondence between the temperature and carrier density dependence of our magnetoresistance measurements we propose an alternative explanation. Working in the framework of semiclassical Boltzmann transport theory we demonstrate that the combination of spin-orbit coupling and scattering from finite-range impurities can explain the observed magnitude of the negative magnetoresistance, as well as the temperature and electron density dependence.

  18. Gravitomagnetic Instabilities in Anisotropically Expanding Fluids

    Science.gov (United States)

    Kleidis, Kostas; Kuiroukidis, Apostolos; Papadopoulos, Demetrios B.; Vlahos, Loukas

    Gravitational instabilities in a magnetized Friedman-Robertson-Walker (FRW) universe, in which the magnetic field was assumed to be too weak to destroy the isotropy of the model, are known and have been studied in the past. Accordingly, it became evident that the external magnetic field disfavors the perturbations' growth, suppressing the corresponding rate by an amount proportional to its strength. However, the spatial isotropy of the FRW universe is not compatible with the presence of large-scale magnetic fields. Therefore, in this paper we use the general-relativistic version of the (linearized) perturbed magnetohydrodynamic equations with and without resistivity, to discuss a generalized Jeans criterion and the potential formation of density condensations within a class of homogeneous and anisotropically expanding, self-gravitating, magnetized fluids in curved space-time. We find that, for a wide variety of anisotropic cosmological models, gravitomagnetic instabilities can lead to subhorizontal, magnetized condensations. In the nonresistive case, the power spectrum of the unstable cosmological perturbations suggests that most of the power is concentrated on large scales (small k), very close to the horizon. On the other hand, in a resistive medium, the critical wave-numbers so obtained, exhibit a delicate dependence on resistivity, resulting in the reduction of the corresponding Jeans lengths to smaller scales (well bellow the horizon) than the nonresistive ones, while increasing the range of cosmological models which admit such an instability.

  19. Modulation of persistent magnetoresistance by piezo-strain effect in manganite-based heterostructures

    Science.gov (United States)

    Li, W.; Yan, H.; Chai, X. J.; Wang, S. H.; Dong, X. L.; Ren, L. X.; Chen, C. L.; Jin, K. X.

    2017-05-01

    Persistent magnetoresistance effects in the phase-separated Pr0.65(Ca0.25Sr0.75)0.35MnO3/SrTiO3 and Pr0.65(Ca0.25Sr0.75)0.35MnO3/0.7PbMg1/3Nb2/3O3-0.3PbTiO3 heterostructures under a low magnetic field are investigated. It is observed that the persistent magnetoresistance effects decrease with increasing temperatures and the values for the heterostructures on 0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 and SrTiO3 substrates are about 86.6% and 33.2% at 40 K, respectively. More interestingly, the applied electric field on the 0.7PbMg1/3Nb2/3O3-0.3PbTiO3 substrate can suppress the persistent magnetoresistance effect, indicating that different energy landscapes can be dramatically modulated by the piezo-strain. These results are discussed in terms of the strain-induced competition in the ferromagnetic state and the charge-ordering phase by the energy scenario, which provide a promising approach for designing devices of electric-magnetic memories in all-oxide heterostructures.

  20. Investigate the effect of anisotropic order parameter on the specific heat of anisotropic two-band superconductors

    International Nuclear Information System (INIS)

    Udomsamuthirun, P.; Peamsuwan, R.; Kumvongsa, C.

    2009-01-01

    The effect of anisotropic order parameter on the specific heat of anisotropic two-band superconductors in BCS weak-coupling limit is investigated. An analytical specific heat jump and the numerical specific heat are shown by using anisotropic order parameters, and the electron-phonon interaction and non-electron-phonon interaction. The two models of anisotropic order parameters are used for numerical calculation that we find little effect on the numerical results. The specific heat jump of MgB 2 , Lu 2 Fe 3 Si 5 and Nb 3 Sn superconductors can fit well with both of them. By comparing the experimental data with overall range of temperature, the best fit is Nb 3 Sn, MgB 2 , and Lu 2 Fe 3 Si 5 superconductors.