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Sample records for la-doped mg2si sn

  1. Mg2(Si,Sn)-based thermoelectric materials and devices

    Science.gov (United States)

    Gao, Peng

    Thermoelectric effects are phenomena found in materials that can achieve direct conversion between heat flow and electricity. One important application of thermoelectric effects is thermoelectric generators, which can generate electricity when a temperature gradient is applied. Thermoelectric generators make use of various sources of heat and it is considered a promising solution for waste heat recovery. The conversion efficiency of thermoelectric generators depends on the materials used in the devices. Significant improvement in the performance of thermoelectric materials has been made in the past few decades. However, most of the good thermoelectric materials being investigated have limitations, such as the high materials cost, high materials density and toxicity of the constituent elements. The Mg2(Si,Sn)-based materials studied in this work are promising candidates for thermoelectric generators in the mid-temperature range and have drawn increasing research interest in recent years because these materials are high performance thermoelectrics that are low cost, low-density and non-toxic. In this work, systematic studies were performed on the Mg2(Si,Sn) thermoelectric materials. Thermal phase stability was studied for different compositions of Mg2Si1-xSnx and Mg2Si0.4Sn 0.6 was used as base material for further optimization. Both n-type and p-type samples were obtained by doping the materials with different elements. Peak ZT ˜ 1.5 for the n-type and ZT ˜ 0.7 for the p-type materials were obtained, both of which are among the best reported results so far. Experimental work was also done to study the techniques to develop the Mg2Si 0.4Sn0.6 materials into working devices. Different electrode materials were tested in bonding experiment for this compound, and copper was found to be the best electrode material for Mg2Si 0.4Sn0.6. Preliminary work was done to demonstrate the possibility of fabricating a Mg2Si0.4Sn0.6-based thermoelectric generator and the result is

  2. Ultrafast Synthesis and Related Phase Evolution of Mg2Si and Mg2Sn Compounds

    Science.gov (United States)

    Zhang, Qiang; Lu, Qiangbing; Yan, Yonggao; Su, Xianli; Tang, Xinfeng

    2017-02-01

    Both Mg2Si and Mg2Sn compounds were synthesized by an ultra-fast self-propagating high-temperature synthesis (SHS) method. The data regarding SHS were obtained via theoretical calculation combined with experiments, showing that the adiabatic temperature T ad and ignition temperature T ig of Mg2Si are a little higher than those of Mg2Sn. The mechanism of phase evolution and the concomitant microstructure evolution during the synthesis process of Mg2Si and Mg2Sn compounds were investigated by adopting SHS technique coupled with a sudden quenching treatment. Differential scanning calorimetry (DSC), field emission scanning electron microscopy (FESEM), and x-ray powder diffraction (XRD) results indicate that Mg2Si compound can be directly synthesized through the reaction of Mg and Si elements at around 850 K. Correspondingly, the formation of Mg2Sn needs to undergo melting of Sn and the subsequent feeble reaction between Mg and Sn elements before the large scale transformation at 730 K. As the groundwork, this research embodies great significance for future study on the ultrafast SHS process of the ternary Mg2Si1-x Sn x solid solutions.

  3. Electrical transport characterization of Al and Sn doped Mg 2 Si thin films

    KAUST Repository

    Zhang, Bo

    2017-05-22

    Thin-film Mg2Si was deposited using radio frequency (RF) magnetron sputtering. Al and Sn were incorporated as n-type dopants using co-sputtering to tune the thin-film electrical properties. X-ray diffraction (XRD) analysis confirmed that the deposited films are polycrystalline Mg2Si. The Sn and Al doping concentrations were measured using Rutherford backscattering spectroscopy (RBS) and energy dispersive X-ray spectroscopy (EDS). The charge carrier concentration and the charge carrier type of the Mg2Si films were measured using a Hall bar structure. Hall measurements show that as the doping concentration increases, the carrier concentration of the Al-doped films increases, whereas the carrier concentration of the Sn-doped films decreases. Combined with the resistivity measurements, the mobility of the Al-doped Mg2Si films is found to decrease with increasing doping concentration, whereas the mobility of the Sn-doped Mg2Si films is found to increase.

  4. Thermoelectric Properties of Hot-Pressed Materials Based on Mg2Si n Sn1- n

    Science.gov (United States)

    Samunin, A. Yu.; Zaitsev, V. K.; Konstantinov, P. P.; Fedorov, M. I.; Isachenko, G. N.; Burkov, A. T.; Novikov, S. V.; Gurieva, E. A.

    2013-07-01

    Mg2Si n Sn1- n solid solutions consist of nontoxic widespread elements. In this work a number of samples of Mg2Si n Sn1- n solid solutions, where 1 ≥ n ≥ 0.7 with various carrier concentrations, were obtained using microcrystalline powder by hot pressing in vacuum. The Seebeck coefficient and the thermal and electrical conductivity were measured in the temperature range from 300 K to 800 K. It is shown that the specific thermoelectric figure of merit (the ratio of the thermoelectric figure of merit to the material density) of these samples weakly depends on the composition of the solid solution. Hence, whether a solid solution or pure Mg2Si is used depends on the application temperature of the material.

  5. The Influence of Grain Boundary Scattering on Thermoelectric Properties of Mg2Si and Mg2Si0.8Sn0.2

    Science.gov (United States)

    Pshenai-Severin, D. A.; Fedorov, M. I.; Samunin, A. Yu.

    2013-07-01

    The temperature dependences of the Seebeck coefficient, and electrical and thermal conductivities of bulk hot-pressed Sb-doped n-type Mg2Si and Mg2Si0.8Sn0.2 samples were measured in the temperature range from 300 K to 850 K together with the Hall coefficients at room temperature. The features of the complex band structure and scattering mechanisms were analyzed based on experimental data within the relaxation-time approximation. Based on the obtained model parameters, the possibility of improvement of the thermoelectric figure of merit due to nanostructuring and grain boundary scattering was theoretically analyzed for both Mg2Si and the solid solution.

  6. Advanced thermoelectrics governed by a single parabolic band: Mg2Si(0.3)Sn(0.7), a canonical example.

    Science.gov (United States)

    Liu, Wei; Chi, Hang; Sun, Hui; Zhang, Qiang; Yin, Kang; Tang, Xinfeng; Zhang, Qingjie; Uher, Ctirad

    2014-04-21

    The well-known single parabolic band (SPB) model has been useful in providing insights into the understanding of transport properties of numerous thermoelectric materials. However, the conduction and valence bands of real semiconductors are rarely truly parabolic which limits the predictive power of the SPB model. The coincidence of the band edges of two parabolic bands, a situation arising in Mg2Si1-xSnx solid solutions when x∼ 0.7, naturally makes the SPB approximation applicable to evaluate all transport parameters. We demonstrate this in the case of Bi-doped Mg2Si0.3Sn0.7 where the minima of the two conduction bands at the X-point of the Brillouin zone coincide. The combination of a large density-of-states effective mass m* ∼ 2.6 me arising from the enhanced valley degeneracy Nv, high mobility μd due to low deformation potential Ed (8.77-9.43 eV), and ultra-low alloy scattering parameter Ea (0.32-0.39 eV) leads to an outstanding power factor, PFmax∝ (m*)(3/2)μd, of up to 4.7 mW m(-1) K(-2) at around 600 K. The specification and improved understanding of scattering parameters using the SPB model are important and instructive for further optimization of the thermoelectric performance of n-type Mg2Si0.3Sn0.7.

  7. THERMOELECTRIC PROPERTIES OF HOT-PRESSED p-TYPE Mg2Si0.3Sn0.7 SOLID SOLUTION

    Directory of Open Access Journals (Sweden)

    G. N. Isachenko

    2014-05-01

    Full Text Available It is shown that thermoelectric energy conversion which gives the possibility for utilizing a low potential heat is one of the ways for adoption of energy-saving technologies; and semiconductor materials with p-type and n-type conductivities having high thermoelectric figure of merit are necessary for operation of thermoelectric generators. The paper deals with possibility of usage of the p-Mg2Si0.3Sn0.7 solid solution (with a nanostructured modification as a couple for the well studied thermoelectric material based on n-Mg2Si-Mg2Sn. A technological scheme for fabrication of heavily doped Mg2Si0.3Sn0.7 solid solution of p-type by hot pressing from nanopowder is developed. The given technology has made it possible to reduce duration of a homogeneous material fabrication and has improved its physical and chemical properties. The samples were made by three ways: direct fusion for polycrystals fabrication; hot pressing from microparticles; nanostructuring, i.e. hot pressing from nanoparticles. By X-ray diffraction it is shown that sizes of structural elements in the fabricated samples are about 40 nm. The probe technique is used for measurement of electric conductivity and Seebeck coefficient. The stationary absolute method is used for measurement of thermal conductivity. Thermoelectric figure of merit is defined by measured values of kinetic coefficients in the temperatures range of 77 – 800 K. It was demonstrated, that electric conductivity, Seebeck coefficient and the power factor do not depend practically on a way of solid solution preparation. Thermal conductivity of samples pressed from nanoparticles has appeared to be higher, than of samples, obtained by direct fusion; i.e. in this case nanostructuring has not led to increase of thermoelectric figure of merit. The conclusion is drawn, that polycrystalline semiconductor Mg2Si0.3Sn0.7 can be used as a p-branch for a thermoelectric generator though nanostructuring has not led to the figure of

  8. 微波低温制备Mg2Si0.4Sn0.6-y Biy热电材料的传输机理∗%Thermo electric transp ort mechanism of Mg2Si0.4Sn0.6-yBiy prepared by low-temperature microwave reaction

    Institute of Scientific and Technical Information of China (English)

    张华; 陈少平; 龙洋; 樊文浩; 王文先; 孟庆森

    2015-01-01

    According to Debye relaxation, the polarization of electric dipole can be accomplished in 10−10 s under the action of an alternating electromagnetic filed with a frequency of 2.45 GHz, so it is feasible to obtain nano powder by carrying out solid reaction in microwave at low temperature in a short time. In this work, the syntheses of Mg2Si0.4Sn0.6−yBiy (0 6 y 6 0.03) solid solution thermoelectric materials are successfully achieved by microwave-assisted solid state reaction at low temperature with MgH2 serving as one reactant instead of Mg, and their transportation mechanisms are studied based on the SPB (single parabolic band) model as well. The results indicate that the volatilization and oxidation of Mg can be suppressed effectively in this process. Fine stoichiometric product can be achieved with nano-lamellar structure with an interlayer spacing of about 100 nm by carrying out the reaction between MgH2 and Si, Sn in microwave at 400 ◦C in 15 min. The introduction of Bi dopant can increase carrier concentration and lattice distortion. With the cooperation between the nano lamellar structure and lattice distortion, the phone is scattered so effectively that the sample owns a lowest thermal conductivity,κmin of 1.36 W·m−1·K−1 at 550 K based on the fact that the phonon scattering is dominant in the heat transfer process. The calculated results show that the theoretical κmin is 0.93 W·m−1·K−1, which is lower than 1.36 W·m−1·K−1. Therefore, by further adjusting the process parameters and increasing the effective doping rate of Bi and the density of the lattice defects, it is expected to obtain lower thermal conductivity. The band convergence is also verified by increasing the density-of-state effective mass. The apparent increase in m∗ is due to a gradual increase in carrier concentration with increasing temperature. Despite the agreement between the data and the model, the irregular behavior between m∗and temperature is a very strong

  9. Features of Mg2Si Layer Growth in Si/Mg2Si Multilayers

    Directory of Open Access Journals (Sweden)

    L.E. Konotopskyi

    2016-06-01

    Full Text Available Features of magnesium siliced layer growth in Si/Mg2Si multilayers in initial state and after thermal annealing were studied by methods of transmission electron microscopy and X-Ray scattering. As-deposited magnesium silicide layers are amorphous with nanocrystal inclusions of metastable h-Mg2Si. Formation of Mg2Si in hexagonal modification occurs under the influence of stress produced by silicon layers. At T = 723 К Mg2Si layers finished crystallizes in hexagonal modification, with some coarsening of grains. That is accompanied with 7.3 % reduction in period of the Si/Mg2Si multilayer.

  10. Variation of equation of state parameters in the Mg2(Si 1-xSnx) alloys

    KAUST Repository

    Pulikkotil, Jiji Thomas Joseph

    2010-08-03

    Thermoelectric performance peaks up for intermediate Mg2(Si 1-x:Snx) alloys, but not for isomorphic and isoelectronic Mg2(Si1-xGex) alloys. A comparative study of the equation of state parameters is performed using density functional theory, Green\\'s function technique, and the coherent potential approximation. Anomalous variation of the bulk modulus is found in Mg2(Si1-xSn x) but not in the Mg2(Si1-xGex) analogs. Assuming a Debye model, linear variations of the unit cell volume and pressure derivative of the bulk modulus suggest that lattice effects are important for the thermoelectric response. From the electronic structure perspective, Mg2(Si1-xSnx) is distinguished by a strong renormalization of the anion-anion hybridization. © 2010 IOP Publishing Ltd.

  11. Synthesis and Gas Sensing Properties of Single La-Doped SnO2 Nanobelts

    Directory of Open Access Journals (Sweden)

    Yuemei Wu

    2015-06-01

    Full Text Available Single crystal SnO2 nanobelts (SnO2 NBs and La-SnO2 nanobelts (La-SnO2 NBs were synthesized by thermal evaporation. Both a single SnO2 NB sensor and a single La-SnO2 NB sensor were developed and their sensing properties were investigated. It is found that the single La-SnO2 NB sensor had a high sensitivity of 8.76 to ethanediol at a concentration of 100 ppm at 230 °C, which is the highest sensitivity of a single SnO2 NB to ethanediol among three kinds of volatile organic (VOC liquids studied, including ethanediol, ethanol, and acetone. The La-SnO2 NBs sensor also exhibits a high sensitivity, good selectivity and long-term stability with prompt response time to ethanediol. The mechanism behind the enhanced sensing performance of La-doped SnO2 nanobelts is discussed.

  12. Synthesis and Gas Sensing Properties of Single La-Doped SnO₂ Nanobelts.

    Science.gov (United States)

    Wu, Yuemei; Zhang, Heng; Liu, Yingkai; Chen, Weiwu; Ma, Jiang; Li, Shuanghui; Qin, Zhaojun

    2015-06-16

    Single crystal SnO2 nanobelts (SnO2 NBs) and La-SnO2 nanobelts (La-SnO2 NBs) were synthesized by thermal evaporation. Both a single SnO2 NB sensor and a single La-SnO2 NB sensor were developed and their sensing properties were investigated. It is found that the single La-SnO2 NB sensor had a high sensitivity of 8.76 to ethanediol at a concentration of 100 ppm at 230 °C, which is the highest sensitivity of a single SnO2 NB to ethanediol among three kinds of volatile organic (VOC) liquids studied, including ethanediol, ethanol, and acetone. The La-SnO2 NBs sensor also exhibits a high sensitivity, good selectivity and long-term stability with prompt response time to ethanediol. The mechanism behind the enhanced sensing performance of La-doped SnO2 nanobelts is discussed.

  13. Conduction band edge effective mass of La-doped BaSnO3

    Science.gov (United States)

    James Allen, S.; Raghavan, Santosh; Schumann, Timo; Law, Ka-Ming; Stemmer, Susanne

    2016-06-01

    BaSnO3 has attracted attention as a promising material for applications requiring wide band gap, high electron mobility semiconductors, and moreover possesses the same perovskite crystal structure as many functional oxides. A key parameter for these applications and for the interpretation of its properties is the conduction band effective mass. We measure the plasma frequency of La-doped BaSnO3 thin films by glancing incidence, parallel-polarized resonant reflectivity. Using the known optical dielectric constant and measured electron density, the resonant frequency determines the band edge electron mass to be 0.19 ± 0.01. The results allow for testing band structure calculations and transport models.

  14. Wear Behavior of Al-Mg2Si Cast In-situ Composite: Effect of Mg2Si Different Volume Fractions

    Science.gov (United States)

    Ghiasinejad, J.; Emamy, M.; Ghorbani, M. R.; Malekan, A.

    2010-06-01

    Al-Mg2Si in situ composites are great candidates for automobile brake discs due to their low density, reasonably high young's modulus and low thermal expansion coefficient. Thus, understanding wear properties of this composite is of a great importance. In this study wear behavior of an in-situ Al-Mg2Si composite, prepared from a simple casting route, has been investigated using a pin-on-disc configuration concerning the effect of Mg2Si volume fractions, 15, 20 and 25% respectively. It was found that the weight loss increases with increase in reinforce volume fraction which can be due to a coarse morphology of primary Mg2Si particles. It was found that the variations of weight loss with sliding distance comprise different regimes of which the mechanisms are discussed.

  15. Kinetic limitations of the Mg(2)Si system for reversible hydrogen storage.

    Science.gov (United States)

    Kelly, Stephen T; Van Atta, Sky L; Vajo, John J; Olson, Gregory L; Clemens, B M

    2009-05-20

    Despite the promising thermodynamics and storage capacities of many destabilized metal hydride hydrogen storage material systems, they are often kinetically limited from achieving practical and reversible behavior. Such is the case with the Mg2Si system. We investigated the kinetic mechanisms responsible for limiting the reversibility of the MgH2+Si system using thin films as a controlled research platform. We observed that the reaction MgH2 + 1/2Mg2Si + H2 is limited by the mass transport of Mg and Si into separate phases. Hydrogen readily diffuses through the Mg2Si material and nucleating MgH2 phase growth does not result in reaction completion. By depositing and characterizing multilayer films of Mg2Si and Mg with varying Mg2Si layer thicknesses, we conclude that the hydrogenation reaction consumes no more than 1 nm of Mg2Si, making this system impractical for reversible hydrogen storage.

  16. Microstructural characteristics of in situ Mg2Si/Al-Si composite by low superheat pouring

    Directory of Open Access Journals (Sweden)

    Wu Xiaofeng

    2013-09-01

    Full Text Available To control the morphology and size of the primary and eutectic Mg2Si phases in in situ Mg2Si/Al-Si composite and achieve a feasible and reliable technique to produce appropriate feedstock for the thixo-casting and rheo-casting of this type of material, three Al-Si matrix composites reinforced by 5wt.%, 9wt.% and 17wt.% Mg2Si with hypoeutectic, eutectic and hypereutectic compositions were prepared by the low superheat pouring (LSP process. The effects of the pouring temperature (superheat on the morphology and size distribution of primary phases (primary α-Al and Mg2Si, binary (α-Al + Mg2Si eutectic cell and eutectic Mg2Si were investigated. The experimental results show that low pouring temperature (superheat not only refines the grain structure of the primary α-Al and binary (α-Al + Mg2Si eutectic cell in three composites and promotes the formation of more non-dendritic structural semi-solid metal (SSM slurry of these phases; but also refines the primary and eutectic Mg2Si phases, which seems to be attributed to the creation of an ideal condition for the nucleation and the acquisition of a high survival of nuclei caused by the LSP process.

  17. Study on in-situ Mg2Si/Al-Si composites with different compositions

    Institute of Scientific and Technical Information of China (English)

    Jing Qingxiu; Zhang Caixia; Huang Xiaodong

    2009-01-01

    Effects of chemical composition and heat treatment on microstructures and mechanical properties of in-situ Mg2Si/Al-Si composites were investigated. It was found that, in the microstructure of an Al-5.7wt% Mg2Si composite with 8.2wt% extra Si, the binary eutectic Mg2Si locates at the grain boundaries with an undeveloped Chinese script-like morphology, and the primary α-Al is formed into a cell structure due to the selective modification effect of the modifiers of mischmetal and Strontium salt; whereas in the composite with a near Al-Mg2Si eutectic composition and little extra Si content, the intercrescence eutectic Mg2Si formed with the binary eutectic a-Al grows into integrated Chinese script-like shape. As Si content increases, the eutectic Mg2Si dendrite becomes coarser in morphology but less in volum e fraction. Hardness and tensile strength of the cast Mg2Si/Al-Si composites do not increase with increasing of Mg content, but they are related to the size and morphology of the eutectic and primary Mg2Si phases. Heat treatment with optimal parameters is an effective way to improve the properties of the in-situ composites.

  18. Synthesis, physical and photo electrochemical characterization of La-doped SrSnO3

    Science.gov (United States)

    Hadjarab, B.; Bouguelia, A.; Trari, M.

    2007-08-01

    The transport properties of Sr0.98La0.02SnO3-δ in the system Sr1-xLaxSnO3-δ, after which the pyrochlore La2Sn2O7 appears, were investigated over the temperature range 4.2 300 K. The oxide was found to be n-type semiconductor with concomitant reduction of Sn4+ into Sn2+. The magnetic susceptibility was measured down to 4.2 K and is less than 3×10-5 emu cgs mol-1 consistent with itinerant electron behavior. The electron is believed to travel in a narrow band of Sn:5s character with an effective mass ˜4 mo. The highest band gap is 4.32 eV and the optical transition is directly allowed. A further indirect transition occurs at 4.04 eV. The electrical conductivity follows an Arrhenius-type law with a thermal activation of 40 meV and occurs by small polaron hopping between nominal states Sn4+/2+. The linear increase of thermo-power with temperature yields an electron mobility μ300 K (2×10-4 cm2 V-1 s-1) thermally activated. The insulating-metal transition seems to be of Anderson type resulting from random positions of lanthanum sites and oxygen vacancies. At low temperatures, the conduction mechanism changes to a variable range hopping with a linear plot Ln ρ-1 vs. T-4. The photo electrochemical (PEC) measurements confirm the n-type conductivity and give an onset potential of -0.46 VSCE in KOH (1 M). The Mott Schottky plot C-2 V shows a linear behavior from which the flat band potential Vfb=+0.01 VSCE at pH 7 and the doping density ND=1.04×1021 cm-3 were determined.

  19. Synthesis and Sintering of Mg2Si Thermoelectric Generator by Spark Plasma Sintering

    Institute of Scientific and Technical Information of China (English)

    YANG Meijun; ZHANG Lianmeng; SHEN Qiang

    2008-01-01

    Raw Mg,Si powder were used to fabricate Mg2Si bulk thermoelectric generator by spark plasma sintering (SPS).The optimum parameters to synthesize pure Mg2Si powder were found to be 823 K,0 MPa,10 min with excessive content of 10wt% Mg from the stoichiometric Mg2Si.Mg2Si bulk was synthesized and densified simultaneously at low temperature (823 K) and high pressure (higher than 100 MPa) from the raw powder,but Mg,Si could not react completely,and the sample was not very dense with some microcracks on the surface.Then,Mg,Si powder reacted at 823 K,0 MPa,10 min in SPS chamber to form Mg2Si green compact,again sintered by SPS at 1023 K,20 MPa,5 min.The fabricated sample only contained MgESi phase with fully relative density.

  20. Thermoelectric properties of Al-doped Mg2Si thin films deposited by magnetron sputtering

    Science.gov (United States)

    Chen, Zhi-jian; Zhou, Bai-yang; Li, Jian-xin; Wen, Cui-lian

    2016-11-01

    The Al-doped Mg2Si thin films were fabricated by two-target alternative magnetron sputtering technique, and the influences of different Al doping contents on the thermoelectric properties of Al-doped Mg2Si thin films were investigated. The compositions, crystal structures, electronic transport properties and thermoelectric properties of the thin films were examined using energy dispersive X-ray spectroscopy (EDS), X-ray diffraction (XRD), Hall coefficient measurement and Seebeck coefficient measurement system, respectively. The EDS results show that the thin films doped with Al target sputtering power of 30 W, 60 W and 90 W have the Al content of 0.68 at.%, 1.56 at.% and 2.85 at.%, respectively. XRD results indicate that the diffraction peaks of Mg2Si become stronger with increasing Al dopant. The results of Hall coefficient measurement and Seebeck coefficient measurement system reveal that all the samples are n-type. The conductivities of Al-doped Mg2Si thin films are significantly greater than that of undoped Mg2Si thin film, and increase with increasing Al doping content. With the increase of temperature, the absolute value of the Seebeck coefficients of Mg2Si base thin films increase firstly and then decrease. The maximum power factor obtained is 3.8 mW m-1 k-2 for 1.56 at.% Al-doped Mg2Si thin film at 573 K.

  1. Comparing Doping Methodologies in Mg2Si/AgMg System

    Science.gov (United States)

    Polymeris, G. S.; Theodorakakos, A.; Mars, K.; Godlewska, E.; Lioutas, Ch. B.; Hatzikraniotis, E.; Paraskevopoulos, K. M.

    2014-10-01

    Morphological and optical characterizations for the Mg2Si samples doped with Ag are presented. Two different doping methodologies with silver, namely in situ and ex situ doping, were studied for the case of Mg2Si of self-propagating high-temperature synthesis. Electron microscopy measurements in both scanning and transmission configurations verified the presence of AgMg precipitates embedded in the Mg2Si matrix and similar results were also yielded by FTIR spectroscopy. Finally, the dependence of silver content in both forms of dopant and inter-metallic constituent is studied upon doping technology.

  2. Modification effect of lanthanum on primary phase Mg2Si in Mg-Si alloys

    Institute of Scientific and Technical Information of China (English)

    WANG Liping; GUO Erjun; MA Baoxia

    2008-01-01

    The modifying effect of La addition on primary phase Mg2Si in Mg-5Si alloys was investigated. The results showed that a proper amount of La could effectively modify the primary phase Mg2Si. Based on the present experiment, the optimal modification effect was obtained with an addition of about 0.5 wt.% La. The size of the primary phase Mg2Si was considerably reduced to 25 μm or less and the morphology was modified from a coarse dendritic shape to a polyhedral shape. However, when the addition of La increased to 0.8 wt.% or higher, the primary Mg2Si grew into a coarse dendritic morphology again. Moreover, it was found that some LaSi2 compounds were formed during solidification and the amount of the compounds appeared to increase gradually with increasing La content.

  3. Densification Behavior of Nanocrystalline Mg2Si Compact in Hot-pressing

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    Densification behavior of nanocrystalline Mg2Si (n-Mg2Si) with grain size about 30-50 nm was investigated by hot-pressing at 400℃. The results indicated that the densification process of n-Mg2Si exhibited three linear segments: p<0.3 GPa, 0.3 GPa<p<1.2 GPa, and p>l.2 GPa determined by Heckel formula, among which the third fast increasing segment in high pressure range p>1.2 GPa has seldom been reported in conventional coarse-grained polycrystalline materials. Nevertheless, in the whole pressure range (0.125-1.500 GPa) investigated the densification behavior of n-Mg2Si can be well described by a Kawakita formula p/C=(1/a)p+1/(ab) with constant a=0.452 being in good agreement with the initial porosity of the compact.

  4. Nanostructuring and Thermoelectric Properties of Bulk N-type Mg2Si

    Institute of Scientific and Technical Information of China (English)

    YANG Meijun; ZHANG Lianmeng; SHEN Qiang

    2009-01-01

    Preparation and thermoelectric properties of nanostructured n-type Mg_2Si bulk ma-terials were reported.Nanosized Mg_2Si powder was obtained by mechanical milling of the microsized Mg_2Si powder prepared by solid-state reaction.The bulk materials with 30 nm and 5μm were prepared by spark plasma sintering of the nanosized and microsized Mg_2Si powder,respectively.Both the samples show n-type conduction and the Seebeck coefficient of the sintered samples increase deter-minately with the grain size decrease from 5μm to 30 nm.On the other hand,the electrical and thermal conductivity decrease with the decrease of grain size.Accordingly,decreasing their grain size in-creases their thermoelectric-figure-of-merit.A maximum thermoelectric figure of merit of 0.36 has been obtained for the nanostuctured Mg_2Si sample at 823 K,which is 38%higher than that of mi-crosized Mg_2Si bulk materials and higher than results of other literatures.It could be expected that the properties of the nanocomposites could be further improved by doping optimization.

  5. Kinetic limitations of the Mg2Si system for reversible hydrogen storage

    Science.gov (United States)

    Kelly, Stephen T.; Van Atta, Sky L.; Vajo, John J.; Olson, Gregory L.; Clemens, B. M.

    2009-05-01

    Despite the promising thermodynamics and storage capacities of many destabilized metal hydride hydrogen storage material systems, they are often kinetically limited from achieving practical and reversible behavior. Such is the case with the Mg2Si system. We investigated the kinetic mechanisms responsible for limiting the reversibility of the MgH2+Si system using thin films as a controlled research platform. We observed that the reaction \\mathrm {MgH}_2+\\frac {1}{2}\\mathrm {Si} \\Leftrightarrow \\frac {1}{2}\\mathrm {Mg}_2\\mathrm {Si}+\\mathrm {H}_2 is limited by the mass transport of Mg and Si into separate phases. Hydrogen readily diffuses through the Mg2Si material and nucleating MgH2 phase growth does not result in reaction completion. By depositing and characterizing multilayer films of Mg2Si and Mg with varying Mg2Si layer thicknesses, we conclude that the hydrogenation reaction consumes no more than 1 nm of Mg2Si, making this system impractical for reversible hydrogen storage.

  6. Synchrotron Study of Ag-Doped Mg2Si: Correlation Between Properties and Structure

    Science.gov (United States)

    Prytuliak, Anastasiia; Godlewska, Elzbieta; Mars, Krzysztof; Berthebaud, David

    2014-10-01

    The crystal structure of Ag-doped Mg2Si was investigated using synchrotron and neutron powder diffraction analysis, including in situ synchrotron x-ray powder diffraction patterns, recorded during a thermal cycle from room temperature up to 600°C. Rietveld refinement of diffraction patterns indicated that Ag doping results in partial substitution at Si sites. During heating, the Mg2Si lattice parameters exhibited a shift in the temperature dependence at 300°C to 350°C, which was attributed to Ag precipitation out of Mg2Si1- x Ag x solid solution. In turn, an increase of the Ag present in the Mg2Si lattice after 350°C could be linked to thermally activated diffusion of Ag from β-AgMg phase. The Ag-dopant migration may explain previously outlined instabilities in the thermopower of Ag-doped Mg2Si, e.g., the drop of the Seebeck coefficient value after heating to 150°C to 200°C and its subsequent increase after 350°C to 450°C.

  7. Directional growth of Al-Mg2Si eutectic alloy in the SZ2 unmanned spaceship

    Institute of Scientific and Technical Information of China (English)

    PAN; Mingxiang(潘明祥); LI; Shunpu(李顺朴); ZHAO; Deqian(赵德乾); WANG; Weihua(汪卫华); WEN; Ping(闻平); YU; Yude(俞育德); NIE; Yuxin(聂玉昕); ZHAO; Shengxue(赵生旭); ZHUANG; Yanxin(庄艳歆); CHEN; Xichen(陈熙琛)

    2003-01-01

    This paper reports the investigation results on directional growth of Al-Mg2Si eutectic alloy in the SZ2 unmanned spaceship. The analysis shows that microgravity has influence on the directional growth of Al-Mg2Si eutectic alloy. The eutectic colony in space-grown sample is larger than that in ground-grown sample, and the directional effect is not so good as that of terrestrial sample. But there is no obvious difference in the lamellar thickness between these samples, and lamellar interspacing in space sample is smaller than that grown on the ground. A simple discussion is done on the gravity effect on the directional growth of Al-Mg2Si eutectic alloy.

  8. Conducting grain boundaries enhancing thermoelectric performance in doped Mg2Si

    Science.gov (United States)

    Muthiah, Saravanan; Pulikkotil, Jiji; Srivastava, A. K.; Kumar, Ashok; Pathak, B. D.; Dhar, Ajay; Budhani, R. C.

    2013-07-01

    The thermoelectric properties of Pb doped Mg2Si, synthesized using reactive sintering employing spark plasma sintering, are investigated and are compared with other dopants reported in literature. While a moderate decrease in Seebeck coefficient and thermal conductivity is observed for 2 at. % of Pb doping in Mg2Si, a substantial enhancement in the material's thermoelectric figure-of-merit is observed, which is due to an enormous increase in its electrical conductivity. A brick-layer model is proposed to explain these results, wherein the inter-granular electronic conductivity is facilitated by Pb (or Mg2Pb) phases at grain boundaries, which is supported by microstructural evidences.

  9. Mg2Si As Li-Intercalation Host For Li Cells

    Science.gov (United States)

    Huang, Chen-Kuo; Surampudi, Subbarao; Attia, Alan; Halpert, Gerald

    1993-01-01

    Compound Mg2Si shows promise as lithium-intercalation host for ambient-temperature rechargeable lithium electrochemical cells. As anode reactant material, LiXMg2Si chemically stable in presence of organic electrolyte used in such cells and stores large amounts of lithium. Intercalation reactions highly reversible at room temperature. Also retains sufficient mechanical strength during charge/discharge cycling. Lithium cells containing LixMg2Si anodes prove useful in spacecraft, military, communications, automotive, and other applications in which high energy-storage densities of lithium cells in general and rechargeability of cells needed.

  10. 镧掺杂BaSnO3薄膜的电学和光学特性∗%Electrical and optical behaviors of La-doped BaSnO3 thin film

    Institute of Scientific and Technical Information of China (English)

    费潇; 罗炳成; 金克新; 陈长乐

    2015-01-01

    La-doped BaSnO3 is regarded as a very essential material to construct transparent perovskite devices due to its super high electrical mobility in perovskite transparent conducting oxides. For understanding the high electrical mobility, the effective mass of the carrier in La-doped BaSnO3 is a critical factor and should be determined. In this work, the performances of epitaxial La-doped BaSnO3 thin films grown on (LaAlO3)0.3 (SrAl0.5Ta0.5O3)0.7 (001) substrate by radio-frequency (RF) magnetron sputtering technique are investigated. The electrical properties (resistivity, carrier density, mobility and Seebeck coefficient) and the optical transmittance are analyzed. In addition, it is proved from both the Hall effect and thermoelectric power measurements that the La-doped BaSnO3 thin films are n-type degenerate semiconductor. At 300 K, the resistivity, carrier density, mobility and Seebeck coefficient are 0.987 mΩ·cm, 2.584 × 1020 cm−3, 24.49 cm2·V−1·s−1 and 45.71 µV/K, respectively. The electron effective mass ∼ 0.31m0 (m0, the free electron mass) is extracted by combining the Seebeck coefficient and carrier density. Ba0.99La0.01SnO3 (BLSO) thin film exhibits a high optical transmittance of 73% in the visible spectral region. In order to derive the band-gap energy, the complex dielectric constant, and the film thickness, the transmittance spectrum is simulated based on the dielectric model comprising the band-gap transition (O’Leary-Johnson-Lim model) and free electron excitation (Drude-Lorentz model). The band-gap energy, exponential band tail and thickness of the BLSO thin film are 3.43 eV, 0.27 eV and 781.2 nm, respectively. Wavelength-dependence of complex dielectric function of the BLSO thin film is also obtained from the fitted line. Additionally, the parameters (optical carrier density and mobility) resulting from the optical measurement are in agreement with the results from the electrical measurement, which supports the calculated electron

  11. Thermoelectric Properties of Mg2Si1-xSnx Synthesized by Bulk Mechanical Alloying

    Institute of Scientific and Technical Information of China (English)

    SONG Ren-bo; LIU Ya-zheng; Tatsuhiko AIZAWA

    2006-01-01

    Bulk mechanical alloying (BMA) has been successfully applied to solid-state synthesis of p-type and n-type thermoelectric materials Mg2Si1-xSnx (x = 0, 0.2, 0.4, 0.6, 0.8, 1) from element-powders at the room temperature in a relatively short time. The electrical conductivity, the Seebeck coefficient and the thermal conductivity of the Mg2Si1-xSnx are quite sensitive to the x-content. With the x-content rising, the electrical conductivity increases. When x = 0.6, it reaches the lowest and Mg2Si shows an n-type of semi-conducting. However, when x = 0.2 and T>525 K, the Seebeck coefficient of the samples will change the opposite way. While x≥0.4, the samples present a p-type of semi-conducting. The figure of merit, Z of Mg2Si1-xSnx will be obtained in the range from 300 K to 700 K. When x = 0.6, Z proves to be higher than that of other samples at 300 K≤T≤650 K.

  12. First-principles study on Al4Sr as the heterogeneous nucleus of Mg2Si

    Science.gov (United States)

    Xia, Zhi; Li, Ke

    2016-12-01

    The interfacial structure, electronic structure, work of adhesion and interfacial energy of the Al4Sr(100)/Mg2Si(100) interface have been studied with first-principles calculations to clarify the heterogeneous nucleation potential of the Al4Sr particle for a primary Mg2Si phase. Eight models of the Al4Sr(100)/Mg2Si(100) interface with OT and HCP stacking were adopted for the interfacial model geometries. The results show that the Al-Mg terminations of HCP and Al-Si terminations of OT stacking, with lower interfacial spacing and higher interfacial adhesion, are the most favorable structures after relaxation. Al-Mg- and Al-Si-terminated interfaces, with a lower interfacial distance, form chemical bonds more easily. Metallic bonds are formed near the Al-Mg-terminated interface, while the Al-Si-terminated interface exhibits predominantly covalent bond characteristics. Moreover, the calculated interfacial energies of both terminations are negative in conditions involving excess Mg atoms. The interfacial energies of Al-Si are lower than those of Al-Mg termination, indicating that the Al-Si-terminated interface is more stable. From thermodynamic analysis, we discover that the Al4Sr particle can be an effective heterogeneous nucleation substrate for Mg2Si in a Mg-Al-Si alloy melt.

  13. First-principles study of hydrogen incorporation mechanism in Mg2SiO4

    Science.gov (United States)

    Yamamoto, T.

    2012-12-01

    Most of the geoscientists believe that olivine-based minerals form the major constituent in the upper mantle, which extends to a depth of 660km. The Earth's upper mantle consists mainly of following three phases, alpha-, beta- and gamma-Mg2SiO4. Pressure induced phase transitions occur at about 10 GPa and 15 GPa under low temperature condition from alpha- to beta-Mg2SiO4, and from beta- to gamma-Mg2SiO4, respectively. The existence of beta-Mg2SiO4 gives rise to the discontinuity in seismic velocities at a depth of 410 km. It is widely accepted that the atmosphere and the oceans of the Earth are formed by degassing of the Earth's mantle. Most of the water and/or hydrogen may have been lost or it may still be stored in the Earth's mantle. If considerable amounts of hydrogen are present in the Earth's mantle, such hydrogen plays a key role in the geodynamics of the Earth's interior, because it affects the melting temperature and the transport properties of minerals as well as their elastic properties. Earlier high-pressure experiments suggested that main components of the transition zone of the Earth's mantle, wadsleyite and ringwoodite, can store significant amount of hydrogen [1-4]. More recently, it was reported that the lower mantle minerals, consisting of Mg-perovskite, magnesiowüstite and Ca-perovskite [5], can potentially store considerable amounts of hydrogen. However the effects of hydrogen solution on their physical properties and substitution mechanism of hydrogen in mantle minerals have not yet been fully understood. In the present study, the first-principles Density Functional Theory (DFT) calculations have been performed to investigate the influence of hydrogen incorporations on the compressional mechanism of the major components of upper mantle minerals in the Earth, i.e., forsterite (alpha-Mg2SiO4), wadsleyite (beta-Mg2SiO4) and ringwoodite (gamma-Mg2SiO4), and the mechanism of hydrogen incorporation in these minerals. Observed equilibrium volumes of

  14. Solid State Reaction Synthesis and Thermoelectric Properties of Mg2Si doped with Sb and Te

    Institute of Scientific and Technical Information of China (English)

    2002-01-01

    Doped with Sb and Te,Mg2Si based compounds were prepared respectively by solid state reaction at 823K for 8h.Effects of dopants of Sb and Te on the structure and thermoelectric properties of the compounds were investigated.By calculating the values of the electrical conductivity for Sb-doped sample,the mechanism of electric conduction at 625K is different.The figure of merit for sample doped with 0.4wt% Te at 500K is 2.4×10-3W/mK2,and it reaches 3.3×10-3W/mK2 at 650K for the sample doped with 0.5wt% Sb.The values are more than 1.4 times and 2.3 times of the pure Mg2Si sample.

  15. Microwave Dielectric Properties of Polystyrene-Forsterite (Mg2SiO4) Composite

    Science.gov (United States)

    Sasikala, T. S.; Sebastian, M. T.

    2016-01-01

    Polystyrene-Mg2SiO4 ceramic composites have been prepared by kneading followed by hot pressing. The dielectric properties of the composites have been investigated at both radio and microwave frequency ranges as a function of filler loading up to 50 vol.%. The dielectric constant and loss tangent increased with the ceramic filler content. The composite with 50 vol.% filler had a dielectric constant of 4.0 and loss tangent of 0.006 at 5 GHz, with Vickers microhardness of 35 HV. The coefficient of thermal expansion of the composite decreased and the thermal conductivity increased with the filler loading. PS-Mg2SiO4 composites are possible candidates for microwave substrate applications.

  16. Microstructure and hardness of Mg-based composites reinforced with Mg2Si particles

    Institute of Scientific and Technical Information of China (English)

    Mustafa Aydin; Cem Ozgür; Osman San

    2009-01-01

    Magnesium powders were mechanically alloyed with SiO2 powder particles having different particle sizes using high-energy ball milling techniques under Ar atmosphere for 1 h. The powders were consolidated with cold pressing under 560 Mpa. They were then sintered at 550℃ for 45 min under Ar atmosphere. The composites obtained on the Mg-SiO2 system were investigated using the Archimedes principle, a differential scanning calorimeter, X-ray diffraction, optic microscopy, and scanning electron microscopy. For the mechanically alloyed powders, the solid-state reaction of the synthesis of Mg2Si and MgO progressed further during sintering of the materials. The results showed that the strengthening mechanisms were dependent on dispersion hardening of fine Mg2Si and MgO particulates dispersed homogeneously in the matrix.

  17. Structural characterization and property of in-situ synthesized AZ91-Mg2Si composite

    Institute of Scientific and Technical Information of China (English)

    DONG Long-xiang; WU Yao-ming; DOU Chuan-guo; XU Guo-gen; WANG Li-min

    2006-01-01

    A new-type Mg2Si composite was prepared with Mg-9Al-1Zn (AZ91) alloy and vermiculite as raw materials by melt infiltration method. The results show that the microstructure of composite consists of a large amount of Mg2Si precipitates and a little amount of MgO embedded in α-Mg matrix. The Vickers hardness of the composite is obviously higher than that of matrix of AZ91 alloy. Moreover, the composite exhibits excellent compressive property. The ultimate compressive strength of the material is 290 MPa, the yield strength is 175 MPa, and the elongation is about 5%, which are higher than those of AZ91alloy.

  18. Bismuth doped Mg2Si with improved homogeneity: Synthesis, characterization and optimization of thermoelectric properties

    Science.gov (United States)

    Nieroda, P.; Leszczynski, J.; Kolezynski, A.

    2017-04-01

    Recent investigations on Bi doped Mg2Si have shown huge differences of the optimum doping level with respect to maximization of thermoelectric performance. A possible discrepancy among the published results can have origin in different homogeneity of the samples examined in different studies, but it is impossible to judge because of lack of the microstructural studies. Therefore, the aim of the study was to develop a method for obtaining a homogeneous Mg2Si doped with Bi samples and determine the influence of dopant on their thermoelectric properties as well as the solubility limit. The results of theoretical studies of the electronic structure employing FP-LAPW (Full Potential Linearized Augmented Plane Wave) method calculations within density functional theory DFT using the WIEN2k package in Bi-doped Mg2Si are presented. A series of samples with nominal composition Mg2Si1-xBix (x=0-0.06) were prepared using the spark plasma sintering (SPS) method and subsequent annealing. Structural, phase and chemical composition analyses were examined by X-ray diffraction (XRD), scanning electron microscopy (SEM) and scanning thermoelectric microprobe (STM). The solubility limit was found to be higher than in the previous reports. Carrier concentration was measured using the Hall method. The investigations of the influence of Bi dopant on the transport properties i.e.: electrical conductivity, the Seebeck coefficient and the thermal conductivity were carried out in the temperature range from 300 to 720 K. On the basis of the experimental data, the temperature dependencies of the thermoelectric figure of merit ZT were calculated. Detailed analysis of all obtained results was carried out providing additional insight into the role of the homogeneity of studied materials on their thermoelectric properties.

  19. Nanostructured multilayered thin film barriers for Mg2Si thermoelectric materials

    Science.gov (United States)

    Battiston, S.; Boldrini, S.; Fiameni, S.; Agresti, F.; Famengo, A.; Fabrizio, M.; Barison, S.

    2012-06-01

    The Mg2Si-based alloys are promising candidates for thermoelectric energy conversion in the middle-high temperature range in order to replace lead compounds. The main advantages of silicide-based thermoelectrics are the nontoxicity and the abundance of their constituent elements in the earth crust. The drawback of such kind of materials is their oxygen sensitivity at high temperature that entails their use under vacuum or inert atmosphere. In order to limit the corrosion phenomena, nanostructured multilayered molybdenum silicide-based materials were deposited via RF magnetron sputtering onto stainless steel, alumina and silicon (100) to set up the deposition process and then onto Mg2Si pellets. XRD, EDS, FE-SEM and electrical measurements at high temperature were carried out in order to obtain, respectively, the structural, compositional, morphological and electrical characterization of the deposited coatings. At the end, the mechanical behavior of the system thin film/Mg2Si-substrate as a function of temperature and the barrier properties for oxygen protection after thermal treatment in air at high temperature were qualitatively evaluated by FE-SEM.

  20. Effects of Solid-State Reaction Synthesis Processing Parameters on Thermoelectric Properties of Mg2Si

    Institute of Scientific and Technical Information of China (English)

    JIANG Hong-yi; LONG Hai-shan; ZHANG Lian-meng

    2004-01-01

    The Mg2Si-matrix thermoelectric material was synthesized by low temperature solid-state reaction.This paper studies the effects of holding time and reaction temperature on the particle size and the properties of the material,and also studies effects of doping elemental Sb,Te and their doping seqence on the properties of the material.The result shows that excessively high temperature and elongated holding time of solid-state reaction are harmful,there is a range of particle size to ensure optimum properties and the doping sequence of Sb or Te without influencing the properties.

  1. Tribological Analysis of Mg2Si Particulates Reinforced Powder Metallurgy Magnesium Alloy Composites under Oil Lubrication Condition

    Directory of Open Access Journals (Sweden)

    Katsuyoshi Kondoh

    2009-01-01

    Full Text Available For the evaluation of wear behavior of Mg composites under oil lubrication conditions, powder metallurgy Mg97Y2Zn1 alloy reinforced with additive Mg2Si particles were fabricated by the repeated plastic working (RPW and hot extrusion. The RPW process was effective in refining both Mg2Si reinforcements and α-Mg grains causing the matrix hardening. When increasing the repetition number of RPW process from 200 to 600 cycles, the particle size of Mg2Si additives changed from 8 μm to 1~2 μm, and α-Mg grain size was 1 μm or less. With regard to the defensive and offensive properties of Mg alloys reinforced with Mg2Si dispersoids, the composite had superior adhesive wear resistance compared with the conventional Mg alloys because of its extremely high microhardness of 95~180 Hv by RPW process. The uniform distribution of refined Mg2Si particles was useful for improving both defensive and offensive properties against AZ31B counter disk specimens. The Mg2Si prominent dispersoids in the matrix were also effective in forming the oil grooves around them, and caused the low and stable friction coefficient. On the other hand, in the case of the composite containing coarse Mg2Si particles, severely deep scratches were given on the counter face of the AZ31B disk, and resulted in an unstable and high friction coefficient.

  2. Mg2Si-Based Materials for the Thermoelectric Energy Conversion

    Science.gov (United States)

    Cheng, X.; Farahi, N.; Kleinke, H.

    2016-10-01

    Thermoelectric materials are capable of converting a temperature gradient into electricity (thermoelectric power generation) and vice versa (Peltier cooling). The thermoelectric power generation has been used for decades in spacecraft, where radioactive decay provides the heat source. Additional applications under consideration are based on the utilization of waste heat, for example in automotives or the manufacturing industries. Commercial thermoelectric materials are normally based on Bi2Te3, PbTe, or possibly in the future on the so-called filled skutterudites, such as YbxCo4Sb12. The downside of these materials is that some of their major constituent elements are toxic, namely tellurium, lead, and antimony, and in part rare and expensive (ytterbium, tellurium). Mg2Si on the other hand is composed of abundant, environmentally benign elements, and thus offers a huge advantage for commercial applications. Here, we provide a review of Mg2Si-based materials for thermoelectric energy conversion, discussing how competitive these materials have become in comparison to the above-mentioned more traditional materials.

  3. Effect of strontium on crystallization of Mg2Si phase in Al-Si-Mg casting alloys

    Institute of Scientific and Technical Information of China (English)

    廖恒成; 丁毅; 孙国雄

    2002-01-01

    Optical microscope and SEM were used to observe the changes of the microstructure of Al-11.6%Si-0.4%Mg alloys with varying strontium additions and the effect of strontium on the crystallization of Mg2Si phase was discussed. It is found that Mg2Si phase nucleates on the surfaces of the eutectic silicon flakes in the unfully modified alloys, growing as meshwork or bamboo-shoot shape, however, very few and fine Mg2Si particles phase are isolated at the boundaries of the eutectic cells in the fully modified alloys. Strontium has an important influence on the crystallization of Mg2Si phase in Al-Si-Mg casting alloys and it is thought to be related to the increase of the amount of dendritic α phase and the modifying degree of eutectic silicon phase.

  4. Alternative route for the preparation of CoSb3 and Mg2Si derivatives

    Science.gov (United States)

    Godlewska, E.; Mars, K.; Zawadzka, K.

    2012-09-01

    An alternative manufacturing route has been developed for cobalt triantimonide and magnesium disilicide derivatives. Elemental powders were mixed in stoichiometric proportions, cold pressed into cylindrical preforms and heated in oxygen-free environment to initiate the exothermic reaction. According to DTA/TG measurements and observations under high-temperature microscope, the onset of reaction occurred at a temperature not exceeding the melting point of the more volatile component, i.e. antimony in the case of CoSb3 and magnesium in the case of Mg2Si. The reaction products were additionally heat treated to secure homogenization. Dense sinters were obtained by hot uniaxial pressing of the obtained powders in moderate temperature-and-pressure conditions. Several advantages were identified in the proposed technology: absence of liquid phases, relatively short time of the synthesis, possibility of in-situ or ex-situ doping and grain size control.

  5. Hot Extruded Polycrystalline Mg2Si with Embedded XS2 Nano-particles (X: Mo, W)

    Science.gov (United States)

    Bercegol, A.; Christophe, V.; Keshavarz, M. K.; Vasilevskiy, D.; Turenne, S.; Masut, R. A.

    2016-08-01

    Due to their abundant, inexpensive and non-toxic constituent elements, magnesium silicide and related alloys are attractive for large-scale thermoelectric (TE) applications in the 500-800 K temperature range, in particular for energy conversion. In this work, we propose a hot extrusion method favorable for large-scale production, where the starting materials (Mg2Si and XS2, X: W, Mo) are milled together in a sealed vial. The MoS2 nano-particles (0.5-2 at.%) act as solid lubricant during the extrusion process, thus facilitating material densification, as confirmed by density measurements based on Archimedes' method. Scanning electron microscopy images of bulk extruded specimens show a wide distribution of grain size, covering the range from 0.1 μm to 10 μm, and energy dispersive spectroscopy shows oxygen preferentially distributed at the grain boundaries. X-ray diffraction analysis shows that the major phase is the expected cubic structure of Mg2Si. The TE properties of these extruded alloys have been measured by the Harman method between 300 K and 700 K. Resistivity values at 700 K vary between 370 μΩ m and 530 μΩ m. The ZT value reaches a maximum of 0.26 for a sample with 2 at.% MoS2. Heat conductivity is reduced for extruded samples containing MoS2, which most likely behave as scattering centers for phonons. The reason why the WS2 particles do not bring any enhancement, for either densification or heat transfer reduction, might be linked to their tendency to agglomerate. These results open the way for further investigation to optimize the processing parameters for this family of TE alloys.

  6. The transport and photo electrochemical properties of La-doped stannate BaSnO{sub 3}

    Energy Technology Data Exchange (ETDEWEB)

    Hadjarab, B. [Laboratoire des Solutions Solides (Faculty of Physic), USTHB, BP 32, 16111 Algiers (Algeria); Bouguelia, A. [Laboratoire de Stockage et de Valorisation des Energies Renouvelables (Faculty of Chemistry), USTHB, BP 32, 16111 Algiers (Algeria); Benchettara, A. [Laboratoire Electrochimie-Corrosion, Metallurgie et Chimie Minerale (Faculty of Chemistry), USTHB, BP 32, 16111 Algiers (Algeria); Trari, M. [Laboratoire de Stockage et de Valorisation des Energies Renouvelables (Faculty of Chemistry), USTHB, BP 32, 16111 Algiers (Algeria)], E-mail: mtrari@caramail.com

    2008-08-11

    The electrical conductivity and thermoelectric power of polycrystalline Ba{sub 0.98}La{sub 0.02}SnO{sub 3-{delta}}, prepared under O{sub 2}-free atmosphere, have been measured between 4.2 and 300 K. The existence of onsite bipolaron is due to the tendency to Sn{sup 3+} ions to disproportionate into mixed valences Sn{sup 2+} and Sn{sup 4+} in equivalent sites. The data indicates electron degeneracy like conduction with polaron conductivity and a finite density of states at the Fermi level. The thermal evolution of the conductivity follows an Arrhenius type law with activation energy of 1 meV and electron mobility thermally activated. The conduction mechanism changes to a variable range hopping at low temperatures. From photo electrochemical measurements, the band gap E{sub g} was found to be 3.26 eV and the transition is directly allowed; further indirect interband transition occurs at 2.82 eV. The valence band edge, located at 7.4 eV below vacuum, is made up from O:2p orbital typical of perovskite oxides. The respective values of the slopes (231 and 1104 mV dec{sup -1}) and the exchange current density J (0.339 mA cm{sup -2}) in the semi-logarithmic plot predict long-lived material. As expected, the title oxide exhibits a pH-dependent flat band potential V{sub fb} and at pH 13.60 (KOH 1 M), the current-potential characteristic gave a V{sub fb}-value of -0.03 V{sub SCE}, close to that obtained from the capacitance measurement (+0.05 V{sub SCE}). The C{sup -2}-potential plot displays a straight linear part with a positive slope confirming the n-type conductivity and a uniform doping density (N{sub d} = 7.24 x 10{sup 20} cm{sup -3}). The utilization of BaSnO{sub 3} as coating for PEC electrode is suggested.

  7. 超声波对原位Mg2Si/Al复合材料中初生Mg2Si形态的影响%Effect of ultrasonic on morphology of primary Mg2Si in in-situ Mg2Si/Al composite

    Institute of Scientific and Technical Information of China (English)

    张家陶; 赵宇光; 徐晓峰; 刘晓波

    2013-01-01

    采用光学显微镜和场发射扫描电镜,研究超声波对原位 Mg2Si/Al 复合材料中初生 Mg2Si 形态的影响。研究结果表明:超声波处理使初生Mg2Si的晶粒尺寸从150μm降低到20μm,初生Mg2Si形态发生改变。在二维形貌中,未实施超声波振动处理的初生Mg2Si晶粒生长为含有空腔的粗大颗粒,共晶组织生长于其中,相应的三维形态为含有漏斗状空腔的八面体和十四面体。超声波处理后的初生Mg2Si晶粒变成细小、实心三维形态的颗粒,颗粒棱角已发生钝化效应。%Effects of ultrasonic on morphologies of primary Mg2Si crystals in in-situ Mg2Si/Al composite were investigated by metallographic microscopy and field emission scanning electron microscopy. The results show that the mean grain size of primary Mg2Si crystals is refined from 150 to 20 μm by high intensity ultrasonic, and the morphologies of primary Mg2Si crystals are changed as well. Optical microscopy reveals that primary Mg2Si crystals without ultrasonic vibration exhibit coarse particles with cavities, in which eutectic structures grow. However, primary Mg2Si crystals with ultrasonic vibration appear fine grains without any cavity. Three-dimensional morphologies of primary Mg2Si without ultrasonic vibration display octahedron and tetrakaidecahedron with hopper-like hole in the crystals. After ultrasonic vibration, primary Mg2Si particles become solid crystals with rounded corners and edges.

  8. Influence of Li2Sb Additions on Microstructure and Mechanical Properties of Al-20Mg2Si Alloy

    Directory of Open Access Journals (Sweden)

    Hong-Chen Yu

    2016-03-01

    Full Text Available It is found that Li2Sb compound can act as the nucleus of primary Mg2Si during solidification, by which the particle size of primary Mg2Si decreased from ~300 to ~15–25 μm. Owing to the synergistic effect of the Li2Sb nucleus and adsorption-poisoning of Li atoms, the effect of complex modification of Li-Sb on primary Mg2Si was better than that of single modification of Li or Sb. When Li-Sb content increased from 0 to 0.2 and further to 0.5 wt.%, coarse dendrite changed to defective truncated octahedron and finally to perfect truncated octahedral shape. With the addition of Li and Sb, ultimate compression strength (UCS of Al-20Mg2Si alloys increased from ~283 to ~341 MPa and the yield strength (YS at 0.2% offset increased from ~112 to ~179 MPa while almost no change was seen in the uniform elongation. Our study offers a simple method to control the morphology and size of primary Mg2Si, which will inspire developing new Al-Mg-Si alloys with improved mechanical properties.

  9. Structure of Mg2SiO4 glass up to 140 GPa

    Science.gov (United States)

    Prescher, C.; Prakapenka, V.; Wang, Y.; Skinner, L. B.

    2014-12-01

    The physical properties of melts at temperature and pressure conditions of the Earth's mantle have a fundamental influence on the chemical and thermal evolution of the Earth. However, direct investigations of melt structures at these conditions are experimentally very difficult or even impossible with current capabilities. In order to still be able to obtain an estimate of the structural behavior of melts at high pressures and temperatures, amorphous materials have been widely used as analogue materials. In particular the investigation of sound wave velocities of amorphous SiO2 and MgSiO3 as analogues for silicate melts indicate structural changes at about ~30-40 GPa and ~130-140 GPa [1]. The transition pressures are lower for MgSiO3 than for SiO2 indicating that these transitions are affected by the degree of polymerization of the SiO2 network of the glasses. Nevertheless, these measurements only give a hint about the occurrence of structural transitions but lack information on the actual structural changes accompanied by the sound wave velocity discontinuities. The pressure of the second structural transition at ~130-140 GPa is of vital importance for geophysics. If it causes silicate melts to become denser than the surrounding solid material, it would result in negatively buoyant melts close to the core-mantle boundary, which could be a major factor affecting the chemical stratification of the Earth's mantle during an early magma ocean after the moon forming impact. In order to resolve the structural transition and estimate the effect of a different degree of polymerization further, we studied the structural behavior of Mg2SiO4 glass up to 140 GPa using X-ray total scattering and pair distribution function analysis. The measurements were performed at the GSECARS 13-IDD beamline at the APS employing the newly developed multichannel collimator (MCC) setup. The MCC effectively removes unwanted Compton scattering of the diamond anvils and enables easy extraction of

  10. Effect of nanocomposite structure on the thermoelectric properties of 0.7-at% Bi-doped Mg2Si nanocomposite

    Institute of Scientific and Technical Information of China (English)

    Yang Mei-Jun; Shen Qiang; Zhang Lian-Meng

    2011-01-01

    Nanocomposites offer a promising approach to the incorporation of nanostructured constituents into bulk thermoelectric materials.The 0.7-at% Bi-doped Mg2Si nanocomposites are prepared by spark plasma sintering of the mixture of nanoscale and microsized 0.7-at% Bi-doped Mg2Si powders.Microstructure analysis shows that the bulk material is composed of nano- and micrograins.Although the nanograin hinders electrical conduction,the nanocomposite structure is more helpful to reduce thermal conductivity and increase the Seebeck coefficient,hence improving thermoelectric performance.A dimensionless figure of merit of 0.8 is obtained for the 0.7-at% Bi-doped Mg2Si nanocomposite with 50-wt % nanopowder,which is about twice larger than that of the sample without nanopowder.

  11. Fast synthesis of nanocrystalline Mg2Si by microwave heating: a new route to nano-structured thermoelectric materials.

    Science.gov (United States)

    Savary, Etienne; Gascoin, Franck; Marinel, Sylvain

    2010-12-07

    The ultra fast synthesis of nanocrystalline Mg(2)Si was carried out using microwave radiation. The elemental precursors were first milled together under dry conditions to get fine particles. The resulting mixture of powders of Mg and Si was cold pressed before being heated by microwave irradiation. Precursors and products were analyzed by X-ray diffraction and scanning electron microscopy. The high energy ball milling parameters utilized to prepare the reactive powders have quite an influence on the behavior of the mixture under irradiation. Moreover, SEM imaging demonstrates that the power and time of irradiation are crucial for the grain growth of the Mg(2)Si and must be adequately controlled in order to avoid the decomposition of the phase. Our results show that we successfully managed to easily and quickly synthesize homogeneous nanocrystalline Mg(2)Si with particle size smaller than 100 nm using a microwave power of only 175 W for two minutes on powders ball milled for two hours.

  12. Prediction of the Hot Flow Stress Behavior of AA6063 Including Mg2Si Dissolution

    Science.gov (United States)

    Odoh, Daniel; Mahmoodkhani, Yahya; Whitney, Mark; Wells, Mary

    2017-03-01

    A constitutive model that includes the effect of Mg2Si dissolution during pre-deformation heating and holding has been developed for the prediction of the hot flow stress behavior of AA6063 aluminum alloy. The deformation behavior of homogenized AA6063 aluminum alloy was studied by performing compression tests on a Gleeble 3500 thermomechanical simulator at temperatures ranging from 400 to 550 °C and strain rates from 0.01 to 10 s-1. A one-dimensional model of particle dissolution in spherical coordinate system was developed to determine the Mg-Si solute content during pre-deformation heating and holding. Using the Mg solute content determined from the particle dissolution model, the flow stress during the deformation of AA6063 aluminum alloy at specific temperatures and strain rates was predicted using a modified hyperbolic sine equation. The constitutive model developed was found to be in good agreement with experimental measurements in this study as well as other experimental and model results published in the literature. A 14% increase in flow stress of the alloy was observed for an increase in hold time from 60 to 1500 s at 450 °C. This is due to increased deformation resistance of the alloy as the Mg-Si solute content increases. The modified hyperbolic sine equation developed in this study clearly shows that accounting for Mg-Si solute content improves the ability to accurately predict the flow stress behavior of AA6063 aluminum alloy.

  13. Prediction of the Hot Flow Stress Behavior of AA6063 Including Mg2Si Dissolution

    Science.gov (United States)

    Odoh, Daniel; Mahmoodkhani, Yahya; Whitney, Mark; Wells, Mary

    2017-02-01

    A constitutive model that includes the effect of Mg2Si dissolution during pre-deformation heating and holding has been developed for the prediction of the hot flow stress behavior of AA6063 aluminum alloy. The deformation behavior of homogenized AA6063 aluminum alloy was studied by performing compression tests on a Gleeble 3500 thermomechanical simulator at temperatures ranging from 400 to 550 °C and strain rates from 0.01 to 10 s-1. A one-dimensional model of particle dissolution in spherical coordinate system was developed to determine the Mg-Si solute content during pre-deformation heating and holding. Using the Mg solute content determined from the particle dissolution model, the flow stress during the deformation of AA6063 aluminum alloy at specific temperatures and strain rates was predicted using a modified hyperbolic sine equation. The constitutive model developed was found to be in good agreement with experimental measurements in this study as well as other experimental and model results published in the literature. A 14% increase in flow stress of the alloy was observed for an increase in hold time from 60 to 1500 s at 450 °C. This is due to increased deformation resistance of the alloy as the Mg-Si solute content increases. The modified hyperbolic sine equation developed in this study clearly shows that accounting for Mg-Si solute content improves the ability to accurately predict the flow stress behavior of AA6063 aluminum alloy.

  14. The Effect of Ti on Mechanical Properties of Extruded In-Situ Al-15 pct Mg2Si Composite

    Science.gov (United States)

    Soltani, Niloofar; Bahrami, Amin; Pech-Canul, Martin Ignacio

    2013-09-01

    This work was carried out to investigate the effect of different Ti concentrations as a modifying agent on the microstructure and tensile properties of an in-situ Al-15 pctMg2Si composite. Cast, modified, and homogenized small ingots were extruded at 753 K (480 °C) at the extrusion ratio of 18:1 and ram speed of 1 mm/s. Various techniques including metallography, tensile testing, and scanning electron microscopy were used to characterize the mechanical behavior, microstructural observations, and fracture mechanisms of this composite. The results showed that 0.5 pctTi addition and homogenizing treatment were highly effective in modifying Mg2Si particles. The results also exhibited that the addition of Ti up to 0.5 pct increases both ultimate tensile strength (UTS) and tensile elongation values. The highest UTS and elongation values were found to be 245 MPa and 9.5 pct for homogenized and extruded Al-15 pctMg2Si-0.5 pctTi composite, respectively. Fracture surface examinations revealed a transition from brittle fracture mode in the as-cast composite to ductile fracture in homogenized and extruded specimens. This can be attributed to the changes in size and morphology of Mg2Si intermetallic and porosity content.

  15. Mechanical and Tribological Characterization of Al-Mg2Si Composites After Yttrium Addition and Heat Treatment

    Science.gov (United States)

    Jafari Nodooshan, H. R.; Liu, Wencai; Wu, Guohua; Bahrami, A.; Pech-Canul, M. I.; Emamy, M.

    2014-04-01

    In this study, the effect of heat treatment and yttrium additions on the microstructure, mechanical properties, and tribological behavior of Al-15% Mg2Si cast composites was investigated. The microstructural study revealed the presence of both primary and secondary Mg2Si phases in all composite specimens and also Y-containing intermetallics (Al2Y phases) at higher concentrations. It was also found that Y addition does not change the size and morphology of primary Mg2Si particles considerably, but the pseudo-eutectic Mg2Si changed from a flake-like morphology to fine fibrous or rod-like one. The results show that proper content of Y additions can reduce the amount of Mg2Si phase through dissolving it into the matrix, lead to the precipitation of Al2Y phase and improve the mechanical properties. Modified composites with 0.5% Y exhibited an ultimate tensile strength (UTS) of 290 MPa with an elongation of 4.3%. After exposing the composite to solution treatment at 520 °C for 4 h, the tensile strength of the composite continuously increased with the increase of Y content, and reached the maximum at 1% Y. The maximum UTS and elongation at room temperature for the heat-treated composites are 294 MPa and 7.4%, respectively. In the cast specimen, fracture surfaces are covered by packets with coarse steps, suggesting a brittle mode of failure. Modified composites with 0.5 wt.% Y contain several cracked particles together with a few decohered primary Mg2Si particles. In solution heat-treated state, dimples present at the fracture surface are rather coarse but homogenous, showing a semi-ductile mode of fracture. Wear test results showed that the wear resistance of all specimens increases with the addition of Y up to 0.3 wt.%. Scanning electron microscopic observations of the worn surfaces revealed that the dominant wear mechanism was abrasive wear accompanied by some delamination wear mode.

  16. Comparison of thermoelectric properties of nanostructured Mg2Si, FeSi2, SiGe, and nanocomposites of SiGe–Mg2Si, SiGe–FeSi2

    Directory of Open Access Journals (Sweden)

    Amin Nozariasbmarz

    2016-10-01

    Full Text Available Thermoelectric properties of nanostructured FeSi2, Mg2Si, and SiGe are compared with their nanocomposites of SiGe–Mg2Si and SiGe–FeSi2. It was found that the addition of silicide nanoinclusions to SiGe alloy maintained or increased the power factor while further reduced the thermal conductivity compared to the nanostructured single-phase SiGe alloy. This resulted in ZT enhancement of Si0.88Ge0.12–FeSi2 by ∼30% over the broad temperature range of 500-950 °C compared to the conventional Si0.80Ge0.20 alloy. The Si0.88Ge0.12–Mg2Si nanocomposite showed constantly increasing ZT versus temperature up to 950 °C (highest measured temperature reaching ZT ∼ 1.3. These results confirm the concept of silicide nanoparticle-in-SiGe-alloy proposed earlier by Mingo et al. [Nano Lett. 9, 711–715 (2009].

  17. Coherent interface structures and intergrain Josephson coupling in dense MgO/Mg2Si/MgB2 nanocomposites

    Science.gov (United States)

    Ueno, Katsuya; Nagashima, Yukihito; Seto, Yusuke; Matsumoto, Megumi; Sakurai, Takahiro; Ohta, Hitoshi; Takahashi, Kazuyuki; Uchino, Takashi

    2016-07-01

    Many efforts are under way to control the structure of heterointerfaces in nanostructured composite materials for designing functionality and engineering application. However, the fabrication of high-quality heterointerfaces is challenging because the crystal/crystal interface is usually the most defective part of the nanocomposite materials. In this work, we show that fully dense insulator (MgO)/semiconductor(Mg2Si)/superconductor(MgB2) nanocomposites with atomically smooth and continuous interfaces, including epitaxial-like MgO/Mg2Si interfaces, are obtained by solid phase reaction between metallic magnesium and a borosilicate glass. The resulting nanocomposites exhibit a semiconductor-superconducting transition at 36 K owing to the MgB2 nanograins surrounded by the MgO/Mg2Si matrix. This transition is followed by the intergrain phase-lock transition at ˜24 K due to the construction of Josephson-coupled network, eventually leading to a near-zero resistance state at 17 K. The method not only provides a simple process to fabricate dense nanocomposites with high-quality interfaces, but also enables to investigate the electric and magnetic properties of embedded superconducting nanograins with good intergrain coupling.

  18. Microstructure and microwave dielectric properties of (Zn1–Mg)2SiO4 ceramics

    Indian Academy of Sciences (India)

    Bo Li; Ying Yuan; Shuren Zhang; Hongmei Jiang

    2011-07-01

    (ZnMg)2SiO4 powders was prepared by the sol–gel process, and the microstructure and dielectric properties of (Zn1–Mg)2SiO4 microwave materials were investigated systematically. TG-DSC and XRD analyzes for gels indicate that the (ZnMg)2SiO4 with pure willemite phase could be obtained at low temperature of 850°C. Further, XRD illustrates that just small amounts of Mg can be incorporated into Zn2SiO4 lattice, and the solid solution limit of Mg in Zn2SiO4 is about = 0.1. By appropriate Mg substitution for Zn, the sintering range is widened and the sintering temperature of Zn2SiO4 ceramics can be lowered effectively. SEM shows that Mg-substitution for Zn can promote the grain growth of Zn2SiO4. Moreover, the microwave dielectric properties strongly depended on the substitution content of Mg and sintering temperatures. (Zn0.8Mg0.2)2SiO4 dielectrics sintered at 1170°C show the condense microstructure with small uniform grains and best microwave properties: r = 6.3, × = 189800 GHz and f = –63 ppm/°C.

  19. Contact resistance and stability study for Au, Ti, Hf and Ni contacts on thin-film Mg2Si

    KAUST Repository

    Zhang, Bo

    2016-12-28

    We present a detailed study of post-deposition annealing effects on contact resistance of Au, Ti, Hf and Ni electrodes on Mg2Si thin films. Thin-film Mg2Si and metal contacts were deposited using magnetron sputtering. Various post-annealing temperatures were studied to determine the thermal stability of each contact metal. The specific contact resistivity (SCR) was determined using the Cross Bridge Kelvin Resistor (CBKR) method. Ni contacts exhibits the best thermal stability, maintaining stability up to 400 °C, with a SCR of approximately 10−2 Ω-cm2 after annealing. The increased SCR after high temperature annealing is correlated with the formation of a Mg-Si-Ni mixture identified by cross-sectional scanning transmission electron microscopy (STEM) characterization, X-ray diffraction characterization (XRD) and other elemental analyses. The formation of this Mg-Si-Ni mixture is attributed to Ni diffusion and its reaction with the Mg2Si film.

  20. Synthesis and photoluminescence properties of novel red-emitting Ca14Mg2(SiO4)8:Eu3+/Sm3+ phosphors

    Institute of Scientific and Technical Information of China (English)

    孙文芝; 庞然; 李海锋; 贾永雷; 张粟; 姜丽宏; 李成宇

    2015-01-01

    Novel red-emitting Eu3+, Sm3+ singly doped and co-doped Ca14Mg2(SiO4)8 phosphors were prepared by conventional solid- state reaction. Powder X-ray diffraction patterns were employed to confirm phase purity. Ca14Mg2(SiO4)8:Eu3+ phosphors exhibited intense red emission under 394 nm excitation and Ca14Mg2(SiO4)8:Sm3+ phosphors, excited at 405 nm, also showed strong red emit-ting at 602 nm. The concentration quenching mechanism of Ca14Mg2(SiO4)8:Eu3+ was dipole-dipole interaction, while that of Ca14Mg2(SiO4)8:Sm3+ was energy migration among nearest neighbor ions. The results indicated that Ca14Mg2(SiO4)8:Eu3+ and Ca14Mg2(SiO4)8:Sm3+ were promising red-emitting phosphors for WLEDs. Meanwhile, the effect of co-doping Sm3+ ions on photo-luminescence properties of Ca14Mg2(SiO4)8:Eu3+ was studied and energy transfer from Sm3+ to Eu3+ was discovered in Eu3+, Sm3+ co-doped phosphors.

  1. Effect of heat treatment on the distribution and volume fraction of Mg2Si in structural aluminum alloy 6063

    Science.gov (United States)

    Al-Marahleh, G.

    2006-05-01

    The structure and properties of an aluminum alloy after extrusion in cast and homogenized states are studied. Commercial billets are melted in a horizontal continuous casting installation. After homogenizing the billets are used for fabricating shapes of specified form in an extrusion press. The shapes are subjected to final aging. The volume fraction and the distribution of the second Mg2Si phase are determined after different kinds of treatment. The structure and mechanical properties of shapes obtained from cast and homogenized billets are compared after aging and without aging. The effect of homogenizing on the properties of the alloy after extrusion is analyzed.

  2. 微波辅助MgH2固相反应法制备Mg2Si1-xSnx基热电材料及性能%Fabrication of Mg2Si1-xSnx from MgH2 by Microwave-Assisted Solid State Reaction and Its Thermoelectric Performance

    Institute of Scientific and Technical Information of China (English)

    王彦坤; 陈少平; 樊文浩; 张华; 孟庆森; 杨江峰; 崔教林

    2016-01-01

    The Bi doped Mg2Si1-xSnx (0.4≤x≤0.6) solid solution thermoelectric material with high purity was synthesized by microwave-assisted solid state reaction followed by field activated and pressure assisted synthesis (FAPAS),and its microstructure and transport properties were characterized.Results show that the replacement of Mg used in traditional processes by MgH2 powder significantly reduces the temperature of the solid state reaction and further inhibits the oxidation and volatilization of magnesium.Meanwhile,the low-temperature and rapid heating from microwave restrains the grain growth effectively;as a result,the pure product with an average grain size of 200 nm has been obtained.Thermoelectric performance was tested in the temperature range of 300~750 K.It is indicated that the solid solution with fine lamellar structure and the doping of Bi significantly lower the thermal conductivity and improve the electric properties simultaneously.The 1.5 at% Bi doped Mg2Si0.4Sn0.6 gets the maximum ZT of 0.91 at 600 K.%在微波作用下利用MgH2、纳米Si粉、Sn粉和Bi粉进行固相反应,结合电场激活压力辅助合成法(FAPAS)制备了高纯Bi掺杂的Mg2Si1-xSnx(0.4≤x≤0.6)基固溶体热电材料,并对其微观结构和熟电性能进行了表征.结果表明,MgH2替代传统原料Mg粉显著降低了圃相反应温度且防止了M8的挥发和氧化,同时微波快速低温加热有效抑制晶粒长大,可获得平均晶粒尺寸为200 nm的高纯产物.在300~750 K的温度区间对样品热电性能进行测试.结果表明,细小的片层固溶体组织和Bi的掺杂有效降低了样品热导率,同时改善了其电性能,在600 K时,含1.5%Bi(原子分数)的Mg2Si0.4Sn0.6热电材料具有最大ZT值0.91.

  3. Microstructure Characterization, Mechanical, and Tribological Properties of Slow-Cooled Sb-Treated Al-20Mg2Si-Cu In Situ Composites

    Science.gov (United States)

    Farahany, Saeed; Ghandvar, Hamidreza; Nordin, Nur Azmah; Ourdjini, Ali

    2017-03-01

    Role of Sb addition on structural characteristics, mechanical properties, and wear behavior of Al-20Mg2Si-Cu in situ composite under slow cooling condition was thoroughly investigated in this study using stereomicroscopy, optical and scanning electron microscopy, thermal analysis, tensile, impact, hardness tests, and wear tester. Results show that addition of 0.8 wt.% Sb was found to produce a change in the morphology of primary Mg2Si from dendrite to fine polygonal shape. At this Sb addition, the primary Mg2Si phase also exhibited a reduction in size from 179.4 to 128.6 μm, an increase in density of Mg2Si per area from 12.5 to 32.2 particle/mm2, and a decrease in the aspect ratio from 1.24 to 1.11. Increasing the amount of Sb added up to 1 wt.% also resulted in a decrease in both nucleation and growth temperatures of the eutectic Mg2Si by 2.6 and 1.7 °C respectively, which is most likely due to change of eutectic Mg2Si morphology from flake to fibrous structure. Thermal analysis technique showed that distribution of Mg2Si particles influences the heat conductivity during the solidification process of Al-Mg2Si composite. The results also showed that improvements in mechanical properties of composite were obtained with increasing Sb content due to modification of both primary and eutectic Mg2Si and due to intermetallic compound transformation from β-Al5FeSi to α-Al15(Fe,Mn)3Si2. Examination of fracture surfaces from tensile and impact samples showed that the base composite failed in a brittle manner with decohered or debonded Mg2Si particles, whereas the 0.8 wt.% Sb-treated composite showed more cracked Mg2Si and ductile fracture in the matrix. Wear properties improved significantly with addition of Sb due to modification and better dispersion of fine Mg2Si particles in matrix.

  4. Synthesis and characterization of Mg2SiO4:Tb3+, Eu3+ phosphors for white light generation

    Science.gov (United States)

    Cho, Shinho

    2016-09-01

    The effect of Eu3+ codoping on the structural, morphological, and optical properties of Mg2SiO4:Tb3+ was investigated. The phosphor powders were synthesized by changing the molar concentration of Eu3+ at a fixed Tb3+ content of 5 mol% by using a conventional solid-state reaction. The X-ray diffraction patterns revealed that the crystal structure of all the phosphors, irrespective of the Eu3+ and the Tb3+ contents, showed an orthorhombic structure, and the surface morphology exhibited pebble-like crystalline grains. The emission spectra of Eu3+ and Tb3+-codoped Mg2SiO4 phosphors under an ultraviolet excitation of 252 nm consisted of one intense red band at 619 nm and five weak bands at 448, 488, 598, 658, and 707 nm originating from the transitions of Eu3+, in addition to the several emission bands located at 492, 552, 592, and 628 nm arising from the transitions of Tb3+. As the Eu3+ content was increased, the intensity of the main green emission band at 552 nm decreased markedly and disappeared at 10 mol% Eu3+, when complete energy transfer from Tb3+ to Eu3+ was observed. The results suggest that the emission wavelength and the luminescent intensity of the phosphors can be tuned by modulating the Eu3+ and the Tb3+ contents incorporated into the host matrix.

  5. Effect of Bi modification treatment on microstructure, tensile properties, and fracture behavior of cast Al-Mg2Si metal matrix composite

    Directory of Open Access Journals (Sweden)

    Wu Xiaofeng

    2013-01-01

    Full Text Available Bi has a good modification effect on the hypoeutectic Al-Si alloy, and the morphology of eutectic Si changes from coarse acicular to fine fibrous. Based on the similarity between Mg2Si and Si phases in crystalline structure and crystallization process, the present study investigated the effects of different concentrations of Bi on the microstructure, tensile properties, and fracture behavior of cast Al-15wt.%Mg2Si in-situ metal matrix composite. The results show that the addition of the proper amount of Bi has a significant modification effect on both primary and eutectic Mg2Si in the Al-15wt.%Mg2Si composite. With an increase in Bi content from 0 to 1wt.%, the morphology of the primary Mg2Si is changed from irregular or dendritic to polyhedral shape; and its average particle size is significantly decreased from 70 to 6 μm. Moreover, the morphology of the eutectic Mg2Si phase is altered from flake-like to very short fibrous or dot-like. When the Bi addition exceeds 4.0wt.%, the primary Mg2Si becomes coarse again. However, the eutectic Mg2Si still exhibits the modified morphology. Tensile tests reveal that the Bi addition can improve the tensile strength and ductility of the material. Compared with those of the unmodified composite, the ultimate tensile strength and percentage elongation after fracture with 1.0wt.% Bi increase 51.2% and 100%, respectively. At the same time, the Bi addition changes the fracture behavior from brittle to ductile.

  6. Microstructure and Wear Behavior Of as Cast Al-25mg2si-2cu-2ni Alloy

    Directory of Open Access Journals (Sweden)

    1Geetanjali.S.Guggari ,

    2015-09-01

    Full Text Available The remarkable feature of the Aluminium is its low density and ability to withstand corrosion effect due to phenomenon of passivation. Structural components made from Aluminium and its alloys are vital to the aerospace industry and are important in other areas of transportation and structural materials. The oxides and sulphate are useful compounds of Aluminium based on its weight. In this work, an attempt has been made to utilize the combined effect of high cooling rate solidification, unique micro structural evolution mechanism of T6 heat treatment the advantages of hypereutectic Al-Si system alloyed with other elements such as Cu, Fe and Mg. In the present investigation, the binary alloys in the hypereutectic range viz. Al25Mg2Si has been selected as heat resistant Al-Si alloys. A systematic approach has been carried out to explore the micro structural features, mechanical and wear properties of as cast alloys.

  7. Microstructure investigations of Yb- and Bi-doped Mg2Si prepared from metal hydrides for thermoelectric applications

    Energy Technology Data Exchange (ETDEWEB)

    Janka, Oliver; Zaikina, Julia V.; Bux, Sabah K.; Tabatabaifar, Hosna; Yang, Hao; Browning, Nigel D.; Kauzlarich, Susan M.

    2017-01-01

    Within the field of thermoelectric materials for energy conversion magnesium silicide, Mg2Si, is an outstanding candidate due to its low density, abundant constituents and low toxicity. However electronic and thermal tuning of the material is a required necessity to improve its Figure of Merit, zT. Doping of Yb via reactive YbH2 into the structure is performed with the goal of reducing the thermal conductivity. Hydrogen is released as a by-product at high temperatures allowing for facile incorporation of Yb into the structure. We report on the properties of Yb-and Bi-doped Mg2Si prepared with MgH2 and YbH2 with the focus on the synthetic conditions, and samples' microstructure, investigated by various electron microscopy techniques. Yb is found in the form of both Yb3Si5 inclusions and Yb dopant segregated at the grain boundary substituting for Mg. The addition of 1 at% Yb concentration reduced the thermal conductivity, providing a value of 30 mW/cm K at 800 K. In order to adjust carrier concentration, the sample is additionally doped with Bi. The impact of the microstructure on the transport properties of the obtained material is studied. Idealy, the reduction of the thermal conductivity is achieved by doping with Yb and the electronic transport is adjusted by doping with Bi. Large grain microstructure facilitates the electronic transport. However, the synthetic conditions that provide the optimized microstructure for electrical transport do not facilitate the additional Yb dopant incorporation. Therefore, the Yb and Bi containing sample with the optimized microstructure provides a zT=0.46 at 800 K.

  8. Microstructure investigations of Yb- and Bi-doped Mg2Si prepared from metal hydrides for thermoelectric applications

    Science.gov (United States)

    Janka, Oliver; Zaikina, Julia V.; Bux, Sabah K.; Tabatabaifar, Hosna; Yang, Hao; Browning, Nigel D.; Kauzlarich, Susan M.

    2017-01-01

    Within the field of thermoelectric materials for energy conversion magnesium silicide, Mg2Si, is an outstanding candidate due to its low density, abundant constituents and low toxicity. However electronic and thermal tuning of the material is a required necessity to improve its Figure of Merit, zT. Doping of Yb via reactive YbH2 into the structure is performed with the goal of reducing the thermal conductivity. Hydrogen is released as a by-product at high temperatures allowing for facile incorporation of Yb into the structure. We report on the properties of Yb- and Bi-doped Mg2Si prepared with MgH2 and YbH2 with the focus on the synthetic conditions, and samples' microstructure, investigated by various electron microscopy techniques. Yb is found in the form of both Yb3Si5 inclusions and Yb dopant segregated at the grain boundary substituting for Mg. The addition of 1 at% Yb concentration reduced the thermal conductivity, providing a value of 30 mW/cm K at 800 K. In order to adjust carrier concentration, the sample is additionally doped with Bi. The impact of the microstructure on the transport properties of the obtained material is studied. Idealy, the reduction of the thermal conductivity is achieved by doping with Yb and the electronic transport is adjusted by doping with Bi. Large grain microstructure facilitates the electronic transport. However, the synthetic conditions that provide the optimized microstructure for electrical transport do not facilitate the additional Yb dopant incorporation. Therefore, the Yb and Bi containing sample with the optimized microstructure provides a zT=0.46 at 800 K.

  9. Evolution of grain sizes and orientations during phase transitions in hydrous Mg2SiO4

    Science.gov (United States)

    Rosa, Angelika D.; Hilairet, Nadège; Ghosh, Sujoy; Perrillat, Jean-Philippe; Garbarino, Gaston; Merkel, Sébastien

    2016-10-01

    Transformation microstructures in mantle minerals, such as (Mg,Fe)2SiO4, are critical for predicting the rheological properties of rocks and the interpretation of seismic observations. We present in situ multigrain X-ray diffraction experiments on hydrous Mg2SiO4 at the P/T conditions relevant for deep cold subducting slabs (up to 40 GPa and 850°C) at a low experimental strain rate ( 4 * 10-6s-1). We monitor the orientations of hundreds of grains and grain size variations during the series of α-β-γ (forsterite-wadsleyite-ringwoodite) phase transformations. Microtextural results indicate that the β and an intermediate γ* phase grow incoherently relatively to the host α phase consistent with a nucleation and growth model. The β and γ phases exhibit orientation relationships which are in agreement with previous ex situ observations. The β and intermediate γ* show texturing due to moderate differential stress in the sample. Both the α-β and α-γ transformation induce significant reductions of the mean sample grain size of up to 90% that starts prior to the appearance of the daughter phase. Apart from the γ*, in the newly formed β and γ phases, the nucleation rate is faster than the growth rate, inhibiting the formation of large grains. These results on grain orientations and grain size reductions in relation to transformation kinetics should allow refining existing slab strength models.

  10. Mechanical Response of Al-1.09Mg2Si Alloy under Varying Mould and Thermal Ageing Conditions

    Directory of Open Access Journals (Sweden)

    O. I. Sekunowo

    2012-01-01

    Full Text Available Samples of the 6063 (Al-1.09Mg2Si alloy ingot were melted in a crucible furnace and cast in metal and sand moulds, respectively. Standard tensile, hardness, and microstructural test specimens were prepared from cast samples, solution treated at 520∘C, soaked for 6 hrs, and immediately quenched at ambient temperature in a trough containing water to assume a supersaturated structure. The quenched specimens were then thermally aged at 175∘C for 3–7 hrs. Results show that at different ageing time, varied fractions of precipitates and intermetallics evolved in the specimens’ matrices which affect the resulting mechanical properties. The metal mould specimens aged for four hours (MTA-4 exhibited superior ultimate tensile strength of 247.8 MPa; microhardness, 68.5 HV; elongation, 28.2% . It is concluded that the extent of improvement in mechanical properties depends on the fractions, coherence, and distribution of precipitates along with the type of intermetallics developed in the alloy during ageing process.

  11. First principles prediction of a new high-pressure phase and transport properties of Mg2Si

    Science.gov (United States)

    Kessair, S.; Arbouche, O.; Amara, K.; Benallou, Y.; Azzaz, Y.; Zemouli, M.; Bekki, M.; Ameri, M.; Bouazza, B. S.

    2016-12-01

    We have investigated the structural properties of seven different structure types of Mg2Si which include the cubic CaF2, orthorhombic PbCl2, hexagonal Ni2In, tetragonal Al2Cu, Laves phase (cubic MgCu2), hexagonal MgZn2 and dihexagonal MgNi2 type of structures, using a full potential linearized augmented plane wave method as implemented in WIEN2k within the framework of density functional theory. The exchange-correlation potential is treated by the new form of generalized gradient approximation (GGA-PBEsol). In total energy calculations it is clearly seen that cubic CaF2-type structure is stable at ambient conditions, and it undergoes a first-order phase transition to orthorhombic PbCl2-type, then to the hexagonal Ni2In-type structure and finally to the cubic Laves phase MgCu2-type. A new structure type is predicted to be stable at high pressure. Moreover, we intend to combine the electronic structure calculations performed by mean of generalized gradient approximation and modified Becke-Johnson potential with Boltzmann transport theory as incorporated in BoltzTraP code to interpret and predict the thermoelectric performance of each stable phase as a function of the chemical potential at various temperatures. We find a high thermoelectric thermopower values in cubic CaF2-type structure that could promise an excellent candidate for potential thermoelectric applications.

  12. Fabrication of Mg2Si/AZ91D Composites from Mg-SiO2%Mg-SiO2体系制备Mg2Si/AZ91D复合材料的研究

    Institute of Scientific and Technical Information of China (English)

    王军; 陈刚; 赵玉涛; 徐萌; 张道理; 黄康; 彭蕾

    2010-01-01

    采用原位合成技术制备了Mg2Si/AZ91D复合材料, 并通过光学显微镜(OM)、扫描电镜(SEM)、能谱仪(EDS)和X射线衍射仪(XRD)等对添加碱土、稀土元素的影响进行了研究. 结果表明: AZ91D镁合金中加入SiO2(其中Si占合金质量的3%)后, 出现多边形状或树枝晶状的初生Mg2Si相, 以及汉字状的共晶Mg2Si相, 树枝晶状Mg2Si的平均尺寸约25~50 μm, 汉字状Mg2Si的平均尺寸约12~15 μm;Mg2Si对镁合金中的β-Mg17Al12相有细化作用. 添加Ca, Sr, Y对Mg2Si形貌、尺寸有明显的改善, 当添加0.9%Ca, 0.1%Sr, 0.5%RE(80%Y)变质处理后, Mg2Si形貌全部变为多边形状, 平均尺寸约0.8~5 μm.

  13. Effect of mixed rare earth oxides and CaCO3 modification on the microstructure of an in-situ Mg2Si/Al-Si composite

    Institute of Scientific and Technical Information of China (English)

    LIU Zheng; LIN Jixing; JING Qingxiu

    2009-01-01

    The effects of mixed rare earth oxides and CaCO3 on the microstructure of an in-situ Mg2Si/Al-Si hypereutectic alloy composite were investigated by optical microscope, scanning electron microscope, and energy dispersive spectrum analysis. The results showed that the morphology of the primary Mg2Si phase particles changed from irregular or crosses to polygonal shape, their sizes decreased from 75 μm to about 25 μm, and the compound of both the oxide and CaCO3 was better than either the single mixed rare earth oxides or CaCO3.

  14. The effects of late homogenization conditions on the Mg2Si particle size in a slow pre-heated 6063 aluminum extrusion billet

    Science.gov (United States)

    Kayıkcı, R.; Kocaman, E.; Şirin, S.; ćolak, M.

    2015-03-01

    In order to investigate the effect of late homogenization conditions on the Mg2Si precipitation of 6063 grade extrusion billets are slow pre-heated to intentionally have large Mg2Si particle precipitation. Then the billets are water quenched to preserve this microstructure for late homogenizations. Finally billets are re-heated using two different furnace temperature as 450°C and 500°C at which temperatures the billet are held for 0.5 h, 1 h, 1.5 h, 2 h and 2.5 h periods and water quenched before being taken to metallographic examinations.

  15. Effect of Al-5Ti-B Inoculant Addition on the Graded Microstructure of Centrifugally Cast Al-13.8 wt.% Mg2Si Composite

    Directory of Open Access Journals (Sweden)

    A. Samadi

    2015-07-01

    Full Text Available To evaluate the effect of inoculant addition on functionally graded microstructure of centrifugally cast Al-Mg2Si composites, two cylinders of Al-13.8 wt.% Mg2Si with and without the addition of 1 wt.% Al-5Ti-B inoculant were cast in a vertical centrifugal casting machine. The chemical composition, microstructures and microstructural phases of the different radial sections of the cast cylinders were studied using induction coupled plasma (ICP method, optical/scanning electron microscopes, and X-ray diffractometry, respectively. The results showed that in the inoculant content cylinder, owing to the prevailing thermal regime as well as the specific mode of eutectic solidification in this composite, the titanium and boron compounds were segregated towards the middle layer of the cylinder and caused the formation of primary Mg2Si particles and non-eutectic Al ( in this layer. In addition, due to the effect of centrifugal force during solidification, a higher volume fraction of the light primary Mg2Si particles, according to Stocks law, was segregated towards the inner layer of the cast cylinders.

  16. Modification effect of Yb and Na3PO4 on microstructure of Mg2Si/Mg-4Si alloy and mechanism

    Directory of Open Access Journals (Sweden)

    Xiao-lin Wei

    2015-11-01

    Full Text Available The modification effects of ytterbium (Yb, Na3PO4 and Yb + Na3PO4 on primary Mg2Si phase in Mg-4Si alloys were investigated by means of X-ray diffraction (XRD, optical microscopy (OM, scanning electron microscopy (SEM and energy dispersive spectroscopy (EDS analysis in this work. The results indicate that the morphology of the primary Mg2Si phase apparently changes from coarse dendrites to fine dispersive polygonal particles and the mean size decreases from 276.6 μm to 7.1 μm, with combined modification of 0.8wt.% Yb and 2.64wt.% Na3PO4. Such a morphological evolution results in improvement in the ultimate tensile strength and elongation of the alloys as compared to the base alloy. This may be attributed to the formation of the YbP particles that acted as the heterogeneous nucleation substrates for the primary Mg2Si particles, resulting in a refined distribution of these precipitates. The results of XRD examination show that there was no reaction between Si and Yb or Na3PO4. Solo addition of Yb or Na3PO4 into the melt has no real modification effect on the microstructure, but the primary Mg2Si particles and α-Mg phases become coarser than that in the unmodified alloy.

  17. Precise measurements of enthalpy of postspinel transition in Mg2SiO4 and application to the phase boundary calculation

    Science.gov (United States)

    Kojitani, Hiroshi; Inoue, Toru; Akaogi, Masaki

    2016-02-01

    Drop solution enthalpies (ΔH°d-s) of Mg2SiO4 ringwoodite, Mg2SiO4 forsterite, perovskite-type MgSiO3 (bridgmanite), and MgSiO3 enstatite were measured using a single batch of 2PbO · B2O3 solvent at 978 K. From the obtained ΔH°d-s values of Mg2SiO4 ringwoodite, MgSiO3 bridgmanite, and MgO, an enthalpy of the postspinel phase transition, Mg2SiO4 ringwoodite = MgSiO3 bridgmanite + MgO, was determined to be 78.54 ± 2.28 kJ/mol. Thermodynamic calculations using the obtained phase transition enthalpy and available thermochemical and thermoelastic data provided the phase transition pressure of 23.1 ± 1.4 GPa at 298 K. This value is comparable to those at about 2000 K determined by previous experimental and theoretical studies, implying a considerably gentle Clapeyron slope. Thermodynamic calculations of the postspinel boundary at high temperatures in the anhydrous condition by changing thermochemical and thermoelastic parameters within the uncertainties suggested that the postspinel transition pressure of Mg2SiO4 at high temperature is lower than the pressure corresponding to the global average depth of the "660 km" seismic discontinuity in the Earth's mantle (~23.5 GPa) estimated from one-dimensional reference Earth models and that a most likely Clapeyron slope is about -1 MPa/K. The postspinel transition in the hydrous condition with about 2 wt % H2O, which shows higher transition pressure and steeper Clapeyron slope than those in the anhydrous condition, gives a plausible explanation for seismic observations on the 660 km discontinuity, and therefore, hydrous mantle transition zone would be required.

  18. Dislocation modelling in Mg2SiO4 forsterite: an atomic-scale study based on the THB1 potential

    Science.gov (United States)

    Mahendran, S.; Carrez, P.; Groh, S.; Cordier, P.

    2017-07-01

    Knowledge of the deformation mechanisms of (Mg,Fe)2SiO4 olivine is important for the understanding of flow and seismic anisotropy in the Earth’s upper mantle. We report here a numerical modelling at the atomic scale of dislocation structures and slip system properties in Mg2SiO4 forsterite. Our study focuses on screw dislocations of [100] and [001] Burgers vectors. Computations are performed using the so-called THB1 empirical potential set for Mg2SiO4. Results of dislocation core structures highlight the primary importance of the (010) plane for [100] slip dislocations. For [001] dislocations, we confirm the occurrence of a stable narrow core that evolves into transient planar configurations to glide in (100) and (010). Such configurations suggest a locking-unlocking mechanism.

  19. Influences of Pressure and Substrate Temperature on Epitaxial Growth of γ-Mg2SiO4 Thin Films on Si Substrates

    Institute of Scientific and Technical Information of China (English)

    KANG Lin; GAO Ju; XU Hua-Rong; ZHAO Shao-Qi; CHEN Hong; WU Pei-Heng

    2007-01-01

    An epitaxial,γ-Mg2SiO4 thin film can be a good buffer between the Si substrate and some oxide thin films.For high temperature superconducting multilayer structures,hopefully it can be taken as an insulating layer to replace the widely used MgO film.To explore such possibilities,we carry out systematic studies on the influences of pressure and substrate temperature on the epitaxy of γ-Mg2SiO4 thin films grown on Si(100) substrates using rf magnetron sputtering with an Mg target of purity of 99.95 percent.With the substrate temperature kept at 500℃and the pressure changing from 10Pa to 15Pa,in the XRD spectra the γ-Mg2SiO4(400) peak grows drastically while the MgO(200)peak is suppressed.Keeping the pressure at 15 Pa and increasing the temperature from 500℃ to 570℃ further can improve the film epitaxy,while working at 780℃ and 11 Pa seems to give very good results.X-ray photoelectronic spectroscopy and φscan are used to characterize the stoichiometry,crystallinity,and in-plane growth of the samples.

  20. The Influence of Sintering Temperature on the Microwave Dielectric Properties of Mg2SiO4 Ceramics with CaO-B2O3-SiO2 Addition

    Science.gov (United States)

    Yang, Hongyu; Li, Enzhu; Sun, Chengli; Duan, Shuxin; Yuan, Ying; Tang, Bin

    2017-02-01

    Conventional solid-state methods were used to synthesize Mg2SiO4 ceramic at relatively low sintering temperatures with the assistance of CaO-B2O3-SiO2 (CBS) glass. The effects of the CBS additions on the sintering behavior, crystal structures, microstructures, and microwave dielectric properties of Mg2SiO4 ceramic have been investigated in detail. The results indicate that the addition of CBS glass lowered the sintering temperature of Mg2SiO4 ceramic significantly. The Mg2SiO4 ceramic with 7 wt.% CBS addition sintered at 1325°C for 4 h shows excellent microwave dielectric properties: ɛ r = 6.47, Q × f = 16,552 GHz, τ f = -23.34 ppm/°C.

  1. Al-P和Al-Ti-B对Mg_2Si/Al复合材料显微组织的影响

    Institute of Scientific and Technical Information of China (English)

    李冲; 刘相法

    2008-01-01

    研究了Al-3P和Al-5Ti-1B中间合金单独加入以及同时加入时对Mg2Si/Al复合材料显微组织的影响,并探讨了其作用机理。结果表明,Al-P和Al-Ti-B中间合金均可对Mg2Si产生较好的细化和变质效果,并且Al-Ti-B对Al-P的细化变质效果有促进作用,初生Mg2Si颗粒形态由枝晶变为多边形,平均颗粒尺寸由100μm以上细化至20μm左右。

  2. Ab initio MD simulations of Mg2SiO4 liquid at high pressures and temperatures relevant to the Earth's mantle

    Science.gov (United States)

    Martin, G. B.; Kirtman, B.; Spera, F. J.

    2010-12-01

    Computational studies implementing Density Functional Theory (DFT) methods have become very popular in the Materials Sciences in recent years. DFT codes are now used routinely to simulate properties of geomaterials—mainly silicates and geochemically important metals such as Fe. These materials are ubiquitous in the Earth’s mantle and core and in terrestrial exoplanets. Because of computational limitations, most First Principles Molecular Dynamics (FPMD) calculations are done on systems of only 100 atoms for a few picoseconds. While this approach can be useful for calculating physical quantities related to crystal structure, vibrational frequency, and other lattice-scale properties (especially in crystals), it would be useful to be able to compute larger systems especially for extracting transport properties and coordination statistics. Previous studies have used codes such as VASP where CPU time increases as N2, making calculations on systems of more than 100 atoms computationally very taxing. SIESTA (Soler, et al. 2002) is a an order-N (linear-scaling) DFT code that enables electronic structure and MD computations on larger systems (N 1000) by making approximations such as localized numerical orbitals. Here we test the applicability of SIESTA to simulate geosilicates in the liquid and glass state. We have used SIESTA for MD simulations of liquid Mg2SiO4 at various state points pertinent to the Earth’s mantle and congruous with those calculated in a previous DFT study using the VASP code (DeKoker, et al. 2008). The core electronic wave functions of Mg, Si, and O were approximated using pseudopotentials with a core cutoff radius of 1.38, 1.0, and 0.61 Angstroms respectively. The Ceperly-Alder parameterization of the Local Density Approximation (LDA) was used as the exchange-correlation functional. Known systematic overbinding of LDA was corrected with the addition of a pressure term, P 1.6 GPa, which is the pressure calculated by SIESTA at the experimental

  3. Effect of Silicon Carbide Nanoparticles on the Grain Boundary Segregation and Thermoelectric Properties of Bismuth Doped Mg2Si0.7Ge0.3

    Science.gov (United States)

    Farahi, Nader; Prabhudev, Sagar; Bugnet, Matthieu; Botton, Gianluigi A.; Salvador, James R.; Kleinke, Holger

    2016-12-01

    The effect of silicon carbide (SiC) nanoparticles on the thermoelectric properties of Mg2Si0.676Ge0.3Bi0.024 was investigated. Increasing the concentration of SiC nanoparticles systematically reduces the electrical conductivity from 431 Ω-1 cm-1 for the pristine sample to 370 Ω-1 cm-1 for the sample with 1.5 wt.% SiC at 773 K, while enhancing the Seebeck coefficient from -202 μV K-1 to -215 μV K-1 at 773 K. In spite of the high thermal conductivity of SiC, its additions could successfully decrease the lattice thermal conductivity from 3.2 W m-1 K-1 to 2.7 W m-1 K-1 at 323 K, presumably by adding more interfaces. The Z contrast transmission electron microscopy imaging ( Z = atomic number) and energy dispersive x-ray spectroscopy revealed bismuth segregation at the grain boundary. In summary, the figure of merit reached its maximum value of 0.75 at 773 K for the sample containing 0.5 wt.% SiC.

  4. Effect of Silicon Carbide Nanoparticles on the Grain Boundary Segregation and Thermoelectric Properties of Bismuth Doped Mg2Si0.7Ge0.3

    Science.gov (United States)

    Farahi, Nader; Prabhudev, Sagar; Bugnet, Matthieu; Botton, Gianluigi A.; Salvador, James R.; Kleinke, Holger

    2016-09-01

    The effect of silicon carbide (SiC) nanoparticles on the thermoelectric properties of Mg2Si0.676Ge0.3Bi0.024 was investigated. Increasing the concentration of SiC nanoparticles systematically reduces the electrical conductivity from 431 Ω-1 cm-1 for the pristine sample to 370 Ω-1 cm-1 for the sample with 1.5 wt.% SiC at 773 K, while enhancing the Seebeck coefficient from -202 μV K-1 to -215 μV K-1 at 773 K. In spite of the high thermal conductivity of SiC, its additions could successfully decrease the lattice thermal conductivity from 3.2 W m-1 K-1 to 2.7 W m-1 K-1 at 323 K, presumably by adding more interfaces. The Z contrast transmission electron microscopy imaging (Z = atomic number) and energy dispersive x-ray spectroscopy revealed bismuth segregation at the grain boundary. In summary, the figure of merit reached its maximum value of 0.75 at 773 K for the sample containing 0.5 wt.% SiC.

  5. Synthesis and Luminescence Properties of Red Phosphors:Mn2+ Doped MgSiO3 and Mg2SiO4 Prepared by Sol-Gel Method

    Institute of Scientific and Technical Information of China (English)

    2006-01-01

    Sol-gel method was utilized to synthesize two different series of red silicate phosphors:MgSiO3 and Mg2SiO4 powder samples doped with Mn2+, conducted the investigation of red long-lasting phosphor: MgSiO3:Eu2+, Dy3+, Mn2+. TGA curves of the gel precursor for two series depicted that the loss of residual organic groups and NO3 groups occurs below 450 ℃. According to the XRD patterns, the major diffraction peaks of the MgSiO3 and Mg2SiO4 series are consistent with a proto-enstatite structure (JCPDS No.11-0273) and a forsterite structure (JCPDS No.85-1364) respectively. With the excitation at 415 nm, the red emission band of Mn2+ ions is peaked at 661 nm for MgSiO3:1%(atom fraction) Mn2+ or 644 nm for Mg2SiO4:1%(atom fraction) Mn2+. Compared with Mg2SiO4:Mn2+ samples, MgSiO3:Mn2+ samples exhibit higher luminescence intensity and higher quenching concentration. In addition, the two series co-doped with Eu2+, Dy3+, Mn2+ were also prepared. Photo-luminescence and afterglow properties of the two co-doped series were analyzed, which show that MgSiO3:Eu2+, Dy3+, Mn2+ is more suitable for a red long-lasting phosphor.

  6. Mg2Si的微波固相合成及其热电性能%Microwave direct synthesis and thermoelectric properties of Mg2Si by solid-state reaction

    Institute of Scientific and Technical Information of China (English)

    周书才; 白晨光

    2011-01-01

    为了解决Mg2Si传统制备方法中Mg的氧化、挥发等问题,采用微波低温固相反应法合成Mg2Si热电材料.用XRD分析手段研究合成产物的结构及相组成.在300到700 K的温度范围内,对材料的电导率、Seebeck 系数和热导率随温度的变化进行测量.结果表明,当Mg过量8%、加热功率为2.5 kW时,于853 K保温30 min,可以得到单相Mg2Si热电化合物.在测试温度范围内,Mg2Si具有较高的品质因数ZT值,在600 K温度下达到0.13.%In order to reduce the oxidation and volatilization caused by Mg element in the traditional methods for synthesizing Mg2Si compounds,Mg2Si thermoelectric materials were prepared by solid state reaction and microwave radiation techniques.Structure and phase composition of the materials were investigated by X-ray diffraction.The electrical conductivity,Seebeck coefficient and thermal conductivity were measured as a function of temperature from 300 to 700 K.It is found that high purity Mg2Si powders can be obtained with excessive content of 8% Mg from the stoichiometric Mg2Si at 853 K and 2.5 kW for 30 min.A maximum dimensionless figure of merit,ZT,of about 0.13 was obtained for Mg2Si at 600 K.

  7. Effect of Li+ codoping on structural and luminescent properties of Mg2SiO4:RE3+ (RE = Eu, Tb) nanophosphors for displays and eccrine latent fingerprint detection

    Science.gov (United States)

    Naik, Ramachandra; Prashantha, S. C.; Nagabhushana, H.

    2017-10-01

    Luminescent nanophosphors find wide range of applications for the fabrication of WLEDs as well as in fingerprint detection techniques. Lithium co-doped Mg2SiO4:Tb3+ and Mg2SiO4:Eu3+ nanophosphors were prepared by low temperature solution combustion method. The effect of Li+ co-doping in Mg2SiO4 was systematically studied by Powder X-ray Diffraction (PXRD), Scanning Electron Microscopy (SEM), Transmission Electron Microscopy (TEM), UV-Vis- Diffuse reflectance spectroscopy (DRS) and Photoluminescence (PL) spectroscopy. Further, the optimized powders were used to analyze the eccrine latent fingerprint. The DRS analysis show red shift of the absorption edges in Li+ co-doped nanophosphors. PL studies revealed that a small quantity of Li+ (1 mol %) ions was effective for charge compensation as well as creation of lattice defects to enhance the luminescence emission. The high quantum efficiency and color purity projects it to be a new material for commercial application in white light emitting diodes.

  8. Effects of Shot Process and Aging on Microstructure and Mechanical Properties of Die-Cast Al-5Mg-2Si-Mn Alloy%压射工艺及时效对Al-5Mg-2Si-Mn合金组织及性能的影响

    Institute of Scientific and Technical Information of China (English)

    万里; 吴晗; 胡祖麒; 刘学强; 吴树森

    2013-01-01

    The effects of shot parameters and artificial aging treatment on the microstructure and mechanical properties of the die-casting Al-5Mg-2Si-Mn alloy were investigated. The results show that the die casting samples exhibits good surface with sound microstructure and absence of shrinkage and gas porosity under the condition of shot pressure 100 MPa, high-speed injection velocity and the shrift position of 220 mm. The tensile strength, yield strength and elongation can reach up to 351.1 MPa,200. 7 MPa and 13. 77% respectively. After artificial ageing treatment at 250 'C for 3 hours and then cooled in air, tensile strength, yield strength and elongation of the samples can reach 380. 5 MPa, 246. 9 MPa and 11. 48% respectively.%通过高强韧压铸铝镁合金的压铸工艺试验,研究了主要压射工艺参数和人工时效对该合金标准压铸试样的组织及力学性能的影响.结果表明,在压射比压、快压射速度、快压射转换位置分别为100 MPa、高速档和220 mm时,压铸试样的外观成形良好,组织致密,无缩孔、气孔缺陷,其抗拉强度、屈服强度和伸长率分别为351.1 MPa、200.7 MPa和13.77%;该试样经人工时效(250℃)保温3h后空冷,其抗拉强度、屈服强度和伸长率分别为380.5 MPa、246.9MPa和11.48%.

  9. Recent Research Progress on the Mg2Si Based Thermoelectric Materials%Mg2Si基热电材料的制备与掺杂研究现状

    Institute of Scientific and Technical Information of China (English)

    曹萌萌; 周园; 任秀峰; 年洪恩; 李翔

    2012-01-01

    Thermoelectric materials can convert electricity into heat reversible directly. It is a material which has a superior performance with a environment-friendly property. Mg2Si based semiconductor is one of the most promising material among the entire semiconductor materials which are nontoxic and cheap. It has a potentially high dimensionless figure of merit ZT. And it is very difficult to synthesize Mg2Si alloy because of the high activity of magnesium. So it becomes the researching key about how to synthesize high performance Mg2Si based thermoelectric materials. In this paper, the basic properties had been briefly introduced, the preparation methods and the doping of Mg-Si based thermoelectric materials and its research progress had been reviewed. Based on the introduction of the various synthetic methods, the advantages and disadvantages of these methods as well as how to improve them were summarized. Whats more, the development direction of thermoelectric materials had been prospected.%热电材料是一种性能优越的环境友好型材料,它能够直接把电能和热能相互转化,是目前新技术能源材料领域的关键材料.Mg2Si基半导体是一种新型的中温区热电材料,具有热电值高,原料无毒害等优点,由于镁的活性较高,如何制备出性能更加优良的Mg2Si基块体热电材料成为本领域研究的重点.本文简要介绍了Mg2Si基热电材料的基本性质,阐述其各种制备方法和掺杂研究现状,并展望其未来研究方向.

  10. Solid state synthesis, luminescent properties and energy transfer from Eu2+ to Mn2+ in red phosphor BaMg2Si2O7:Eu2+,Mn2+

    Science.gov (United States)

    Xiao, Weiqin; Lei, Fang; Yin, Luqiao; Shi, Ying; Xie, Jianjun; Zhang, Lei

    2017-10-01

    A series of red phosphors Ba1-yMg2-xSi2O7: xMn2+,yEu2+ have been synthesized by solid-state reaction at 1200 °C for 4 h under H2 atmosphere. The crystal structure and photoluminescence properties have been measured and analyzed. Under excitation of 342 nm, Eu2+ doped Ba1-yMg2Si2O7 (y = 0.05-0.06) shows violet emission at 400 nm, which is due to the 4f-5d transition of Eu2+, while Mn2+ doped BaMg2-xSi2O7 (x = 0.02-0.40) shows weak reddish emission with a broad band centered at around 640 nm, which is caused by the 4T1(4G) -6A1(6S) transitions of Mn2+. When Eu2+ and Mn2+ were co-doped, excellent red emission is shown under the n-UV excitation. Eu2+ and Mn2+ co-doped BaMg2Si2O7 phosphor shows two intense emission bands with the peak at 400 nm and 660 nm, respectively. The broad emission band for Eu2+ overlaps with the excitation peaks of Mn2+ in the range of 400-450 nm, which shows that the emission of Mn2+ is dominantly ascribed to the persistent energy transfer from Eu2+. By changing the ratio of Eu2+/Mn2+, the emission color can be tuned from violet to red. When the doping content is fixed at 0.16 for Mn2+ and 0.32 for Eu2+, the CIE of the phosphor is (0.495,0.315). Eu2+ and Mn2+ co-doped BaMg2Si2O7 phosphors may have potential application for near-UV light-emitting diodes.

  11. Phase Segregation and Superior Thermoelectric Properties of Mg2Si(1-x)Sb(x) (0 ≤ x ≤ 0.025) Prepared by Ultrafast Self-Propagating High-Temperature Synthesis.

    Science.gov (United States)

    Zhang, Qiang; Su, Xianli; Yan, Yonggao; Xie, Hongyao; Liang, Tao; You, Yonghui; Tang, Xinfeng; Uher, Ctirad

    2016-02-10

    A series of Sb-doped Mg2Si(1-x)Sb(x) compounds with the Sb content x within 0 ≤ x ≤ 0.025 were prepared by self-propagating high-temperature synthesis (SHS) combined with plasma activated sintering (PAS) method in less than 20 min. Thermodynamic parameters of the SHS process, such as adiabatic temperature, ignition temperature, combustion temperature, and propagation speed of the combustion wave, were determined for the first time. Nanoprecipitates were observed for the samples doped with Sb. Thermoelectric properties were characterized in the temperature range of 300-875 K. With the increasing content of Sb, the electrical conductivity σ rises markedly while the Seebeck coefficient α decreases, which is attributed to the increase in carrier concentration. The carrier mobility μ(H) decreases slightly with the increasing carrier concentration but remains larger than the Sb-doped samples prepared by other methods, which is ascribed to the self-purification process associated with the SHS synthesis. In spite of the increasing electrical conductivity with the increasing Sb content x, the overall thermal conductivity κ decreases on account of a significantly falled lattice thermal conductivity κ(L) due to the strong point defect scattering on Sb impurities and possibly enhanced interface scattering on nanoprecipitates. As a result, the sample with x = 0.02 achieves the thermoelectric figure of merit ZT ∼ 0.65 at 873 K, one of the highest values for the Sb-doped binary Mg2Si compounds investigated so far. A subsequent annealing treatment on the sample with x = 0.02 at 773 K for 7 days has resulted in no noticeble changes in the thermoelectric transport properties, indicating an excellent thermal stability of the compounds prepared by the SHS method. Therefore, SHS method can serve as an effective alternative fabrication route to synthesize Mg-Si based themoelectrics and some other functional materials due to the resulting high performance, perfect thermal

  12. Al-Mg-Si合金中Mg2Si和Si粒子在晶间腐蚀过程中的作用机理%Corrosion mechanism associated with Mg2Si and Si particles in Al-Mg-Si alloys

    Institute of Scientific and Technical Information of China (English)

    曾锋利; 卫中领; 李劲风; 李朝兴; 谭星; 张昭; 郑子樵

    2011-01-01

    The electrochemical behaviors and coupling behaviors of the Mg2Si and Si phases with a(Al) were investigated,the corrosion morphologies of Al alloys containing Mg2Si and Si particles were observed,and the corrosion mechanism associated with them in Al-Mg-Si alloys was advanced.The results show that Si particle is always cathodic to the alloy base,Mg2Si is anodic to the alloy base and corrosion occurs on its surface at the beginning.However,during its corrosion process,the preferential dissolution of Mg and the enrichment of Si make Mg2Si transform to cathode from anode,leading to the anodic dissolution and corrosion of the alloy base at its adjacent periphery at a later stage.As the mole ratio of Mg to Si in an Al-Mg-Si alloy is less than 1.73,it contains Mg2Si and Si particles simultaneously in the grain boundary area,and corrosion initiates on the Mg2Si surface and the precipitate-free zone (PFZ) at the adjacent periphery of Si particle.As corrosion time is extended,Si particle leads to severe anodic dissolution and corrosion of the PFZ at its adjacent periphery,expedites the polarity transformation between Mg2Si and the PFZ and accelerates the corrosion of PFZ at the adjacent periphery of Mg2Si particle.%研究Al-Mg-Si合金晶界组成相(Al-Mg2Si及Al-Mg2Si-Si)间的电化学行为和动态电化学耦合行为,提出Al-Mg-Si合金的晶间腐蚀机理.研究表明,晶界Si的电位比其边缘Al基体的正,在整个腐蚀过程中作为阴极导致其边缘Al基体的阳极溶解;晶界Mg2Si的电位比其边缘Al基体的负,在腐蚀初期作为阳极发生阳极溶解,然而由于Mg2Si中活性较高的元素Mg的优先溶解,不活泼元素Si的富集,致使Mg2Si电位正移,甚至与其边缘Al基体发生极性转换,导致其边缘Al基体的阳极溶解.当n(Mg)/n(Si)< 1.73时,随着腐蚀的进行,合金晶界同时会有Mg2Si析出相和Si粒子,腐蚀首先萌生于Mg2Si相和Si边缘的无沉淀带,而后,Si粒子一方面导致其边缘无

  13. Elastic constants and thermodynamic properties of Mg2SixSn1-x from first-principles calculations

    Institute of Scientific and Technical Information of China (English)

    Liu Na-Na; Song Ren-Bo; Du Da-Wei

    2009-01-01

    This paper stuides the elastic constants and some thermodynamic properties of Mg2SixSn1-x (x = 0, 0.25, 0.5, 0.75, 1) compounds by first-principles total energy calculations using the pseudo-potential plane-waves approach based on density functional theory, within the generalized gradient approximation for the exchange and correlation potential. The elastic constants of Mg2SixSn1-x were calculated. It shows that, at 273 K, the elastic constants of Mg2Si and Mg2Sn are well consistent with previous experimental data. The isotropy decreases with increasing Sn content. The dependences of the elastic constants, the bulk modulus, the shear modulus and the Debye temperatures of Mg2Si and Mg2Si0.5Sn0.5 on pressure were discussed. Through the quasi-harmonic Debye model, in which phononic effects were considered, the specific heat capacities of Mg2SixSn1-x at constant volume and constant pressure were calculated. The calculated specific heat capacities are well consistent with the previous experimental data.

  14. Highly Active Rare-Earth-Metal La-Doped Photocatalysts: Fabrication, Characterization, and Their Photocatalytic Activity

    Directory of Open Access Journals (Sweden)

    S. Anandan

    2012-01-01

    Full Text Available Efficient La-doped TiO2 photocatalysts were prepared by sol-gel method and extensively characterized by various sophisticated techniques. The photocatalytic activity of La-doped TiO2 was evaluated for the degradation of monocrotophos (MCPs in aqueous solution. It showed higher rate of degradation than pure TiO2 for the light of wavelength of 254 nm and 365 nm. The rate constant of TiO2 increases with increasing La loading and exhibits maximum rate for 1% La loading. The photocatalytic activities of La-doped TiO2 are compared with La-doped ZnO; the reaction rate of the former is ~1.8 and 1.1 orders higher than the latter for the lights of wavelength 254 nm and 365 nm, respectively. The relative photonic efficiency of La-doped TiO2 is relatively higher than La-doped ZnO and commercial photocatalysts. Overall, La-doped TiO2 is the most active photocatalyst and shows high relative photonic efficiencies and high photocatalytic activity for the degradation of MCP. The enhanced photocatalytic activity of La-doped TiO2 is mainly due to the electron trapping by lanthanum metal ions, small particle size, large surface area, and high surface roughness of the photocatalysts.

  15. Synthesis and Characterization of La-Doped Luminescent Multilayer Films

    Directory of Open Access Journals (Sweden)

    Tianlei Wang

    2017-01-01

    Full Text Available In this work, we have successfully designed ordered luminescent multilayer films based on La-doped nonmagnetic or magnetic inorganic nanostructure with electronic microenvironment (EM. The inorganic nanosheets with opposite charge can assemble EM between the interlayers. At the same time, their elements on nanosheets of layer double hydroxides (LDHs are facile to be replaced so that we can introduce transition metal or lanthanide elements. Besides, ferromagnetic effect (FE can be formed in this microenvironment due to introducing transition metal on LDHs nanosheets. As a result, we confirm that EM, FE, and doping La element in the LDHs can affect the vibration of backbone of chromophores and then prolong the luminescent lifetime, which suggests a new pathway for developing the novel light-emitting thin films.

  16. Electronic structure and thermoelectric properties of (Mg2X)2 / (Mg2Y)2 (X, Y = Si, Ge, Sn) superlattices from first-principle calculations

    Science.gov (United States)

    Guo, San-Dong

    2016-05-01

    To identify thermoelectric materials containing abundant, low-cost and non-toxic elements, we have studied the electronic structures and thermoelectric properties of (Mg2X)2/ (Mg2Y)2 (X, Y = Si, Ge, Sn) superlattices with state-of-the-art first-principles calculations using a modified Becke and Johnson (mBJ) exchange potential. Our results show that (Mg2Ge)2/ (Mg2Sn)2 and (Mg2Si)2/ (Mg2Sn)2 are semi-metals using mBJ plus spin-orbit coupling (mBJ + SOC), while (Mg2Si)2/ (Mg2Ge)2 is predicted to be a direct-gap semiconductor with a mBJ gap value of 0.46 eV and mBJ + SOC gap value of 0.44 eV. Thermoelectric properties are predicted by through solving the Boltzmann transport equations within the constant scattering time approximation. It is found that (Mg2Si)2/ (Mg2Ge)2 has a larger Seebeck coefficient and power factor than (Mg2Ge)2/ (Mg2Sn)2 and (Mg2Si)2/ (Mg2Sn)2 for both p-type and n-type doping. The detrimental influence of SOC on the power factor of p-type (Mg2X)2/ (Mg2Y)2 (X, Y = Si, Ge, Sn) is analyzed as a function of the carrier concentration, but there is a negligible SOC effect for n-type. These results can be explained by the influence of SOC on their valence and conduction bands near the Fermi level.

  17. La doping effect on TZM alloy oxidation behavior

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Fan [School of Metallurgy Engineering, Xi’an University of Architecture and Technology, Xi’an 710055 (China); Wang, Kuai-She, E-mail: wangkuaishe888@126.com [School of Metallurgy Engineering, Xi’an University of Architecture and Technology, Xi’an 710055 (China); Hu, Ping; He, Huan-Cheng; Kang, Xuan-Qi [School of Metallurgy Engineering, Xi’an University of Architecture and Technology, Xi’an 710055 (China); Wang, Hua [Xi’an Electric Furnace Institute Co., Ltd., Xi’an 710061 (China); Liu, Ren-Zhi [School of Metallurgy Engineering, Xi’an University of Architecture and Technology, Xi’an 710055 (China); Jinduicheng Molybdenum Co., Ltd., Xi’an 710068 (China); Volinsky, Alex A. [Department of Mechanical Engineering, University of South Florida, Tampa FL 33620 (United States)

    2014-04-01

    Highlights: • The oxidation can be resisted by doping La into TZM alloy. • La doped TZM alloy has more compact organization. • It can rise the starting temperature of severe oxidation reaction by more than 50 °C. • Effectively slow down the oxidation rate. • Provide guidance for experiments of improving high-temperature oxidation resistance. - Abstract: Powder metallurgy methods were utilized to prepare lanthanum-doped (La-TZM) and traditional TZM alloy plates. High temperature oxidation experiments along with the differential thermal analysis were employed to study the oxidation behavior of the two kinds of TZM alloys. An extremely volatile oxide layer was generated on the surface of traditional TZM alloy plates when the oxidation started. Molybdenum oxide volatilization exposed the alloy matrix, which was gradually corroded by oxygen, losing its quality with serious surface degradation. The La-TZM alloy has a more compact structure due to the lanthanum doping. The minute lanthanum oxide particles are pinned at the grain boundaries and refine the grains. Oxide layer generated on the matrix surface can form a compact coating, which effectively blocks the surface from being corroded by oxidation. The oxidation resistance of La-TZM alloys has been enhanced, expanding its application range.

  18. Optical Characteristics of La-Doped ZnS Thin Films Prepared by Chemical Bath Deposition

    Institute of Scientific and Technical Information of China (English)

    XIE Hai-Qing; CHEN Yuan; HUANG Wei-Qing; HUANG Gui-Fang; PENG Ping; PENG Li; WANG Tai-Hang; ZENG Yun

    2011-01-01

    Undoped and La-doped ZnS thin films are prepared by chemical bath deposition (CBD) process through the co-precipitation reaction of inorganic precursors zinc sulfate, thiosulfate ammonia and La2O3. Composition of the films is analyzed using an energy-dispersive x-ray spectroscopy (EDS). Absorption spectra and spectral transmittances of the films are measured using a double beam UV-VIS spectrophotometer (TU-1901). It is found that significant red shifts in absorption spectra and decrease in absorptivity are obtained with increasing lanthanum. Moreover, optical transmittance is increased as La is doped, with a transmittance of more than 80% for wavelength above 360 nm in La-doped ZnS thin films. Compared to pure ZnS, the band gap decreases and flat-band potential positively shifts to quasi-metal for the La-doped ZnS. These results indicate that La-doped ZnS thin films could be valuably adopted as transparent electrodes.%@@ Undoped and La-doped ZnS thin films are prepared by chemical bath deposition (CBD) process through the co-precipitation reaction of inorganic precursors zinc sulfate, thiosulfate ammonia and La2O2.Composition of the 61ms is analyzed using an energy-dispersive x-ray spectroscopy (EDS).Absorption spectra and spectral tra.nsmitta.nces of the 61ms are measured using a double beam UV-VIS spectrophotometer (TU-1901).It is found that significant red shifts in absorption spectra and decrease in absorptivity are obtained with increasing lanthanum.Moreover, optical transmittance is increased as La is doped, with a transmittance of more than 80% for wavelength above 360 nm in La-doped ZnS thin 61ms.Compared to pure ZnS, the band gap decreases and flat-band potential positively shifts to quasi-metal for the La-doped ZnS.These results indicate that La-doped ZnS thin 6hns could be valuably adopted as transparent electrodes.

  19. PREPARING NANO-CRYSTALLINE La DOPED WC/Co POWDER BY HIGH ENERGY BALL MILLING

    Institute of Scientific and Technical Information of China (English)

    S. Liu; D.Q. Yi; Y.X. Li; D. Zou

    2002-01-01

    The La doped WC/Co powder was prepared by high energy ball milling. The changesof crystal structure, micrograph and defect of the powder were investigated by means ofXRD (X-ray diffraction), SEM (scanning electron microscope) and DTA (differentialthermal analysis). The results show that adding trace La element into carbides iseffective to minish the grain size of WC/Co powder. The La doped carbides powderwith grain size of 30nm can be obtained after 1Oh ball milling. The XRD peak of Cophase disappeared after 20h ball milling, which indicated solid solution (or secondarysolid solution) of Co phase in WC phase. The La doped powder with grain size of1Ohm is obtained after 30h ball milling. A peak of heat release at the temperatureof 470℃ was emerged in DTA curve within the range of heating temperature, whichshowed that the crystal structure relaxation of the powder appeared in the process ofhigh energy ball milling. After consolidated the La doped WC/Co alloy by high energyball milling exhibits ultra-fine grain Sizes and better mechanical properties.

  20. SN Refsdal

    DEFF Research Database (Denmark)

    Kelly, P. L.; Brammer, G.; Selsing, J.;

    2015-01-01

    in the rest frame, provide additional evidence that supports the SN 1987A-like classification. In comparison with other examples of SN 1987A-like SNe, SN Refsdal has a blue B-V color and a high luminosity for the assumed range of potential magnifications. If SN Refsdal can be modeled as a scaled version of SN...

  1. Synthesis, characterization and photoluminescence property of La-doped ZnO nanoparticles

    Science.gov (United States)

    Lang, Jihui; Fang, Yue; Zhang, Qi; Wang, Jiaying; Li, Tianshun; Li, Xiuyan; Han, Qiang; Wang, Dandan; Wei, Maobin; Yang, Jinghai

    2016-10-01

    La-doped ZnO nanoparticles were synthesized via a facile and surfactant-free chemical precipitation route, and the effects of lanthanum doping concentration on the structures, morphologies and photoluminescence properties were investigated by XRD, TEM, EDX, PL and UV-Vis absorption spectra. The results showed that the La3+ ions were successfully incorporated into the ZnO host, and the products were well-crystalline. The average size and band gap of La-doped ZnO nanoparticles were varied with the lanthanum doping concentration. The average size of doped nanoparticles was much smaller as compared to that of undoped ZnO. The increasing of lanthanum doping concentration increased the defects in ZnO and resulted in a red shift of UV emission, indicating the narrow band gap in doped nanoparticles. This was probably attributed to the impurity energy levels in band gap introduced by substitutional La3+ ions.

  2. The First-Principle Calculation of La-doping Effect on Piezoelectricity in Tetragonal KNN Crystal

    Science.gov (United States)

    Zhang, Qiaoli; Zhu, Jiliang; Yuan, Daqing; Zhu, Bo; Wang, Mingsong; Zhu, Xiaohong; Fan, Ping; Zuo, Yi; Zheng, Yongnan; Zhu, Shengyun

    2012-05-01

    The La-dopping effect on the piezoelectricity in the K0.5Na0.5NbO3 (KNN) crystal with a tetragonal phase is investigated for the first time using the first-principle calculation based on density functional theory. The full potentiallinearized augumented plane wave plus local orbitals (APW-LO) method and the supercell method are used in the calculation for the KNN crystal with and without the La doping. The results show that the piezoelectricity originates from the strong hybridization between the Nb atom and the O atom, and the substitution of the K or Na atom by the La impurity atom introduces the anisotropic relaxation and enhances the piezoelectricity at first and then restrains the hybridization of the Nb-O atoms when the La doping content further increases.

  3. The First-Principle Calculation of La-doping Effect on Piezoelectricity in Tetragonal KNN Crystal

    Institute of Scientific and Technical Information of China (English)

    张乔丽; 朱基亮; 袁大庆; 朱波; 王明松; 朱小红; 范平; 左翼; 郑永男; 朱升云

    2012-01-01

    The La-dopping effect on the piezoelectricity in the K0.5Na0.5NbO3 (KNN) crystal with a tetragonal phase is investigated for the first time using the first-principle calculation based on density functional theory. The full potentiallinearized augumented plane wave plus local orbitals (APW-LO) method and the supercell method are used in the calculation for the KNN crystal with and without the La doping. The results show that the piezoelectricity originates from the strong hybridization between the Nb atom and the O atom, and the substitution of the K or Na atom by the La impurity atom introduces the anisotropic relaxation and enhances the piezoelectricity at first and then restrains the hybridization of the Nb-O atoms when the La doping content further increases.

  4. High-temperature Electric Properties of Polycrystalline La-doped CaMnO3 Ceramics

    Institute of Scientific and Technical Information of China (English)

    Jinle Lan; Yuanhua Lin; Ao Mei; Cewen Nan; Yong Liu; Boping Zhang; Jingfeng Li

    2009-01-01

    Polycrystalline La-doped CaMnO3 ceramics have been prepared by a solid-state sintering method. Analysis of microstructure and phase composition indicates that the addition of La can prohibit the further growth of grain, and no impurity phase appears. The results revealed that the La doping can lead to a large change of the activation energy (from 0.22 to 0.02 eV), and thus result in a marked increase in electric conductivity of 2-4 orders of magnitude. The power factor can reach about 1.5×10-4 W·m-1·K-2 in a wide temperature range, which potentially make them attractive for n-type high-temperature thermoelectric materials.

  5. Ethanol Gas Sensor Based on Pure and La-Doped Bismuth Vanadate

    Science.gov (United States)

    Golmojdeh, Hosein; Zanjanchi, Mohamad Ali

    2014-02-01

    Bismuth vanadate (BiVO4) and lanthanum-doped bismuth vanadate (La-doped BiVO4) were prepared via the precipitation method. Their films were produced by simple drop-coating of the initial solutions over gold electrodes, which were coated over a glass substrate. The structural properties of BiVO4 and La-doped BiVO4 samples were studied using x-ray diffractometer, diffuse reflectance spectroscopy, scanning electron microscopy, atomic force microscopy, and compositional analysis. A chamber was designed to install the sensing device and also controllable tools for gas flow rate and temperature. Changes in the resistance of the prepared layers were recorded during exposure to various amounts of ethanol vapor at different temperatures. Both BiVO4 and La-doped BiVO4 layers showed measurable responses in the form of resistance drop (increased conductivity). The higher temperatures up to 450 °C led to stronger signals. The layer containing lanthanum showed signals with shorter recovery times. Introduction of lanthanum caused smaller crystallite sizes in addition to the formation of tetragonal phase of BiVO4. Presence of lanthanum increased the amounts of grain boundaries, magnitude of the response, and sensitivity. Sensitivity of La-doped BiVO4 was almost twice that of the BiVO4 at concentrations of 150-500 ppm of ethanol. Also, the correlation of the response as a function of concentration of ethanol in gas phase was exploited, and two different linear ranges were observed for the lower and higher concentrations.

  6. Dramatic changes in the magnetic coupling mechanism for La-doped CaMnO3.

    Science.gov (United States)

    Granado, E; Moreno, N O; Martinho, H; García, A; Sanjurjo, J A; Torriani, I; Rettori, C; Neumeier, J J; Oseroff, S B

    2001-06-01

    The exchange interactions in polycrystalline samples of Ca1-xLaxMnO3 (0.00< or =x< or =0.05) are studied by means of Raman scattering and electron paramagnetic resonance. Dramatic reductions in the spin-phonon interactions and magnetic correlations are observed for La doping levels as small as approximately 2%-3%. These results show that the charge carriers play an important role in the overall exchange coupling in the electron-doped manganites, even at very low doping levels.

  7. Surface modification of sol–gel synthesized TiO{sub 2} nanoparticles induced by La-doping

    Energy Technology Data Exchange (ETDEWEB)

    Grujić-Brojčin, M., E-mail: myramyra@ipb.ac.rs [Institute of Physics, University of Belgrade, Pregrevica 118, 11080 Belgrade (Serbia); Armaković, S. [Department of Chemistry, Biochemistry and Environmental Protection, Faculty of Sciences, University of Novi Sad, Trg D. Obradovića 3, 21000 Novi Sad (Serbia); Tomić, N. [Institute of Physics, University of Belgrade, Pregrevica 118, 11080 Belgrade (Serbia); Abramović, B. [Department of Chemistry, Biochemistry and Environmental Protection, Faculty of Sciences, University of Novi Sad, Trg D. Obradovića 3, 21000 Novi Sad (Serbia); Golubović, A.; Stojadinović, B. [Institute of Physics, University of Belgrade, Pregrevica 118, 11080 Belgrade (Serbia); Kremenović, A. [Faculty of Mining and Geology, Laboratory for Crystallography, University of Belgrade, Đušina 7, 11000 Belgrade (Serbia); Babić, B. [Institute of Nuclear Sciences “Vinča”, University of Belgrade, 11001 Belgrade (Serbia); Dohčević-Mitrović, Z.; Šćepanović, M. [Institute of Physics, University of Belgrade, Pregrevica 118, 11080 Belgrade (Serbia)

    2014-02-15

    The influence of La-doping in the range of 0.5–6.0 mol% on structural and morphological properties of TiO{sub 2} nanopowders synthesized by sol–gel routine has been investigated by XRPD, AFM, EDS and BET measurements, as well as Raman spectroscopy. The XRPD and Raman measurements have revealed the anatase phase as dominant in all nanopowders, with crystallite size decreasing from ∼ 15 nm in pure TiO{sub 2} to ∼ 12 nm in La-doped samples. The BET data suggest that all samples are fully mesoporous, with mean pore diameters in the range of ∼ 6–8 nm. The specific surface area and the complexity of pore structure are greater in doped samples than in pure TiO{sub 2} sample. The spectroscopic ellipsometry has apparently shown that the band gap has been gradually increased with the increase of La content. The STM and STS techniques have been used successfully to evaluate the surface morphology and electronic properties of La-doped nanopowders. All investigated properties have been related to photocatalytic activity, tested in degradation of a metoprolol tartrate salt (0.05 mM), and induced by UV-radiation. All doped samples showed increased photocatalytic activity compared to pure TiO{sub 2}, among which the 0.65 mol% La-doped sample appeared to be the most efficient. - Highlights: • Effects of La-doping on structural, morphological and electronic properties of TiO{sub 2} nanopowders. • Surface morphology and electronic properties of La-doped nanopowders evaluated by STM/STS. • Spectroscopic ellipsometry shown gradual increase of bandgap with the increase of La content. • Photocatalytic activity of samples was tested in degradation of MET under UV light.

  8. SN Refsdal

    DEFF Research Database (Denmark)

    Kelly, P. L.; Brammer, G.; Selsing, J.;

    2016-01-01

    We have acquired Hubble Space Telescope (HST) and Very Large Telescope near-infrared spectra and images of supernova (SN) Refsdal after its discovery as an Einstein cross in Fall 2014. The HST light curve of SN Refsdal matches the distinctive, slowly rising light curves of SN 1987A-like supernovae...

  9. Dielectric Relaxation of La-Doped Zirconia Caused by Annealing Ambient

    Directory of Open Access Journals (Sweden)

    Werner M

    2011-01-01

    Full Text Available Abstract La-doped zirconia films, deposited by ALD at 300°C, were found to be amorphous with dielectric constants (k-values up to 19. A tetragonal or cubic phase was induced by post-deposition annealing (PDA at 900°C in both nitrogen and air. Higher k-values (~32 were measured following PDA in air, but not after PDA in nitrogen. However, a significant dielectric relaxation was observed in the air-annealed film, and this is attributed to the formation of nano-crystallites. The relaxation behavior was modeled using the Curie–von Schweidler (CS and Havriliak–Negami (HN relationships. The k-value of the as-deposited films clearly shows a mixed CS and HN dependence on frequency. The CS dependence vanished after annealing in air, while the HN dependence disappeared after annealing in nitrogen.

  10. Radiation-induced color centers in La-doped PbWO sub 4 crystals

    CERN Document Server

    Deng, Q; Zhu, R Y

    1999-01-01

    This report presents the result of a study on radiation-induced color center densities in La-doped lead tungstate (PbWO sub 4) crystals. The creation and annihilation constants of radiation-induced color centers were determined by using transmittance data measured for a PbWO sub 4 sample before and during sup 6 sup 0 Co gamma-ray irradiation at a dose rate of 15 rad/h. Following a model of color center kinetics, these constants were used to calculate color center densities under irradiations at 100 rad/h. The result was found to be in good agreement with experimental data, indicating that the behaviour of PbWO sub 4 crystals under irradiation can be predicted according to this model.

  11. Fabrication and photoelectric properties of La-doped p-type ZnO nanofibers and crossed p-n homojunctions by electrospinning.

    Science.gov (United States)

    Zhang, H D; Yu, M; Zhang, J C; Sheng, C H; Yan, X; Han, W P; Liu, Y C; Chen, S; Shen, G Z; Long, Y Z

    2015-06-21

    La-doped p-type ZnO nanofibers were successfully synthesized by electrospinning, followed by calcination. The microstructure and morphology of the La-doped ZnO nanofibers were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy. The field effect curve of individual nanofibers confirms that the resulting La-doped ZnO fibers are p-type semiconductors. The doping mechanism is discussed. Furthermore, crossed p-n homojunction nanofibers were also prepared based on electrospun La-doped p-type ZnO and n-type pure ZnO fibers. The current-voltage curve shows the typical rectifying characteristic of a p-n homojunction device. The turn-on voltage appears at about 2.5 V under the forward bias and the reverse current is impassable.

  12. Fabrication and photoelectric properties of La-doped p-type ZnO nanofibers and crossed p-n homojunctions by electrospinning

    Science.gov (United States)

    Zhang, H. D.; Yu, M.; Zhang, J. C.; Sheng, C. H.; Yan, X.; Han, W. P.; Liu, Y. C.; Chen, S.; Shen, G. Z.; Long, Y. Z.

    2015-06-01

    La-doped p-type ZnO nanofibers were successfully synthesized by electrospinning, followed by calcination. The microstructure and morphology of the La-doped ZnO nanofibers were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy. The field effect curve of individual nanofibers confirms that the resulting La-doped ZnO fibers are p-type semiconductors. The doping mechanism is discussed. Furthermore, crossed p-n homojunction nanofibers were also prepared based on electrospun La-doped p-type ZnO and n-type pure ZnO fibers. The current-voltage curve shows the typical rectifying characteristic of a p-n homojunction device. The turn-on voltage appears at about 2.5 V under the forward bias and the reverse current is impassable.

  13. Insulator-Metal Transition due to La Doping in Double Perovskite Sr2MnMoO6

    Institute of Scientific and Technical Information of China (English)

    刘晓峻; 黄巧建; 徐胜; 张淑仪; 罗爱华

    2004-01-01

    Resistivity, thermal diffusivity, lattice and magnetic properties of double perovskite Sr2-xLaxMnMoO6 are investigated with systematic change of La doping concentration x from 0.0 to 0.4. The insulator to metal phase transition is observed with increasing x above 0.3, suggesting that the extra electrons via substitution of La3+for Sr2+ ions occupy mainly the conduction Mo-4d band. According to the insulator to metal phase transition,the thermal diffusivity of Sr2-xLaxMnMoO6 enhances from 0.33cm2/s at x = 0.0 to 0.49cm2/s at x = 0.4. We further investigate the La doping effects on the lattice and magnetic properties.

  14. Effect of La doping on optical and electrical transport properties of nanocrystalline YCrO3

    Science.gov (United States)

    Sinha, R.; Kundu, S.; Basu, S.; Meikap, A. K.

    2016-10-01

    In this work we have reported the synthesis and characterization of La doped YCrO3 nanoparticles following sol-gel method. The optical band gap of the investigated samples decreases with the increase of doping content. Photoluminescence spectra show distinct red light emission in the visible range around 630 nm. Dielectric permittivity is measured within the temperature range 298 K-523 K and in the frequency range 20 Hz - 1 MHz following the power law ε'(f) ∝Tp , which shows that the temperature exponent p increases with the decreasing frequency and its values varies from 11.4 to 17 for 1 MHz to 100 KHz frequency variation. The ac impedance analysis shows that grain boundary contribution is dominating over grain contribution. The dc conductivity of the investigated samples follows semiconductor behavior. The analysis of both the dc and ac conductivity shows that the activation energy decreases and the conductivity increases with the increase of doping concentration which is very much important for its application as interconnect material in Solid Oxide Fuel Cells (SOFCs).

  15. Two-dimensional electron gas generated by La-doping at SrTiO3(001 surface: A first-principles study

    Directory of Open Access Journals (Sweden)

    Yun Li

    2013-06-01

    Full Text Available We carried out first-principles calculations to study the electronic properties of SrO-terminated and TiO2-terminated SrTiO3(001 surfaces with La-doping at the surface. We find that an intrinsic lower-lying state at the SrO-terminated surface can accommodate a two-dimensional electron gas (2DEG. By introducing La-doping at the SrO-terminated surface the energy position of the surface state and the 2DEG density can be tuned by changing the doping concentration. The higher the La-doping concentration, the lower the lower-lying state and the higher the 2DEG density. This 2DEG has a small effective mass and hopefully shows a high mobility.

  16. Water- and humidity-enhanced UV detector by using p-type La-doped ZnO nanowires on flexible polyimide substrate.

    Science.gov (United States)

    Hsu, Cheng-Liang; Li, Hsieh-Heng; Hsueh, Ting-Jen

    2013-11-13

    High-density La-doped ZnO nanowires (NWs) were grown hydrothermally on flexible polyimide substrate. The length and diameter of the NWs were around 860 nm and 80-160 nm, respectively. All XRD peaks of the La-doped sample shift to a larger angle. The strong PL peak of the La-doped sample is 380 nm, which is close to the 3.3 eV ZnO bandgap. That PL dominated indicates that the La-doped sample has a great amount of oxygen vacancies. The lattice constants ~0.514 nm of the ZnO:La NW were smaller when measured by HR-TEM. The EDX spectrum determined that the La-doped sample contains approximately 1.27 at % La. The La-doped sample was found to be p-type by Hall Effect measurement. The dark current of the p-ZnO:La NWs decreased with increased relative humidity (RH), while the photocurrent of the p-ZnO:La nanowires increased with increased RH. The higher RH environment was improved that UV response performance. Based on the highest 98% RH, the photocurrent/dark current ratio was around 47.73. The UV response of water drops on the p-ZnO:La NWs was around 2 orders compared to 40% RH. In a water environment, the photocurrent/dark current ratio of p-ZnO:La NWs was 212.1, which is the maximum UV response.

  17. La Doping of CdS for Enhanced CdS/CdSe Quantum Dot Cosensitized Solar Cells

    Directory of Open Access Journals (Sweden)

    Xiaolei Qi

    2015-01-01

    Full Text Available CdS/CdSe system of quantum dot cosensitized solar cells (QDCSCs is one of the most attractive structures for high-efficiency due to its effect of level adjusting. However, the stepwise structure formed between levels of CdS and CdSe has a limitation for enhancing the efficiencies. Metal ions doping in quantum dots have emerged as a common way for changing the Fermi level, band gap, and conductance. Here we report an innovative concept for the rare earth materials La-doped of the CdS layer in the CdS/CdSe QDCSCs by means of the successive ionic layer adsorption and reaction (SILAR. Then we tested that La doped quantum dots can help more electrons accumulate in CdS film, which makes the Fermi level shift up and form a stepped structure. This method leads to enhanced absorption intensity, obviously increasing current density in CdS/CdSe QDCSCs. Our research is a new exploration for improving efficiencies of quantum dot sensitized solar cells.

  18. La-Doped CaCu3Ti4O12 Prepared By Conventional And Microwave Processing

    Science.gov (United States)

    Sharif, Nur Shafiza A.; Ahmad, Zainal A.; Hutagalung, Sabar D.

    2010-01-01

    Two processing techniques were used to prepare separate samples of undoped and La-doped CaCu3Ti4O12: the conventional furnace and microwave processing. Stoichiometric composition of undoped CaCu3Ti4O12 was produced by mixing starting materials of Ca(OH)2, CuO and TiO2 powder. The mixed powder was milled and then calcined, compacted and sintered using either a furnace (conventional) or a domestic microwave oven (microwave processing). The La2O3 was added to undoped CaCu3Ti4O12 in order to prepare the La-doped CaCu3Ti4O12 with different doping concentrations. The conventional furnace heating technique requires a calcination temperature of 900° C for 12 hours before the mixture is sintered at 1000° C for 12 hours. However, a single phase CaCu3Ti4O12 compound was successfully synthesized using a microwave oven for a calcination time of 30 minutes. Longer microwave sintering time tends to produce denser CaCu3Ti4O12 pellets.

  19. Sol-gel preparation of La-doped bismuth ferrite thin film and its low-temperature ferromagnetic and ferroelectric properties

    Institute of Scientific and Technical Information of China (English)

    YAN Fuxue; ZHAO Gaoyang; SONG Na

    2013-01-01

    Bi0.85La0.15FeO3 thin film was prepared on ATO glass substrates by sol-gel technique.The effect of La doping on phase structure,film surface quality,ion valence,and ferroelectric/magnetic properties of Bi0.85La0.15FeO3 film were investigated.La doping suppressed the formation of impurity phases and the transition of Fe3+ to Fe2+ ions at room temperature.Compared with the un-doped BiFeO3,La-doping also increased the average grain size and the film density,which resulted in the decrease of film leakage current density.The remanent polarization and saturation magnetization were enhanced significantly by La doping.The remanent polarization of Bi0.85La0.15FeO3 films gradually decreased while saturation magnetization increased with the decrcase of measuring temperature within a range from 50 to 300 K.

  20. Photocatalytic evolution of molecular hydrogen and oxygen over La-doped NaTaO3 particles: Effect of different cocatalysts (Presentation Recording)

    Science.gov (United States)

    Ivanova, Irina; Kandiel, Tarek; Hakki, Amer; Dillert, Ralf; Bahnemann, Detlef W.

    2015-09-01

    To solve the global energy and environmental issues highly efficient systems for solar energy conversion and storage are needed. One of them involves the photocatalytic conversion of solar energy into the storable fuel molecular hydrogen via the water splitting process utilizing metal-oxide semiconductors as catalysts. Since photocatalytic water splitting is still a rather poorly understood reaction, fundamental research in this field is required. Herein, the photocatalytic activity for water splitting was investigated utilizing La-doped NaTaO3 as a model photocatalyst. The activity of La-doped NaTaO3 was assessed by the determination of the overall quantum yield of molecular hydrogen and molecular oxygen evolution. In pure water La-doped NaTaO3 exhibits rather poor activity for the photocatalytic H2 evolution whereby no O2 was detected. To enhance the photocatalytic activity the surface of La-doped NaTaO3 was modified with various cocatalysts including noble metals (Pt, Au and Rh) and metal oxides (NiO, CuO, CoO, AgO and RuO2). The photocatalytic activity was evaluated in pure water, in aqueous methanol solution, and in aqueous silver nitrate solution. The results reveal that cocatalysts such as RuO2 or CuO exhibiting the highest catalytic activity for H2 evolution from pure water, possess, however, the lowest activity for O2 evolution from aqueous silver nitrate solution. La-doped NaTaO3 modified with Pt shows the highest quantum yield of 33 % with respect to the H2 evolution in the presence of methanol. To clarify the role of methanol in such a photocatalytic system, long-term investigations and isotopic studies were performed. The underlying mechanisms of methanol oxidation were elucidated.

  1. Influence of La doping and synthesis method on the properties of CoFe2O4 nanocrystals

    Science.gov (United States)

    Mansour, S. F.; Hemeda, O. M.; El-Dek, S. I.; Salem, B. I.

    2016-12-01

    Nanocrystals of La doped CoFe2O4 were synthesized using three different techniques: flash autocombustion, citrate-nitrate and the standard ceramic technique. X-ray diffraction (XRD) and transmission electron microscopy (TEM) were used to characterize the obtained nanocrystals. All samples were crystallized in a spinel structure with cubic symmetry. The decrease in the lattice constant was endorsed to the large difference in ionic radii of both La+3 (1.216 Å) and Fe (0.65 Å) in 6-f coordination. The citrate method displayed superior Ms values amongst all techniques. The coercivity was found to exhibit largest values for the citrate method and then the flash while smallest values are associated with ceramic technique.

  2. Effects of temperature on hy drostatic pressure-induced FE-AFE phase transition in PbLa(Zr, Sn, Ti)O3 ceramics

    Institute of Scientific and Technical Information of China (English)

    2001-01-01

    Hydrostatic pressure-induced ferroelectricantiferroelectric (FE-AFE) phase transition and the pressure dependence of dielectric properties in La-doped Pb(Zr, Sn,Ti)O3 ceramics were researched; the effects of temperature on hydrostatic pressure-induced FE-AFE phase transition and dielectric properties of the samples were studied. It was found that the temperature made the FE-AFE phase transition pressure decrease, and there existed the behavior of dielectric frequency dispersion and phase transition diffusion in the dielectric-pressure spectrum. These phenomena were very useful to enrich and develop the knowledge on the diffused phase transition behavior of polycomponent relaxor ferroelectric.``

  3. Evaluation of La-Doped Mesoporous Bioactive Glass as Adsorbent and Photocatalyst for Removal of Methylene Blue from Aqueous Solution

    Directory of Open Access Journals (Sweden)

    Liying Li

    2015-01-01

    Full Text Available A series of La-doped mesoporous bioactive glass (BG-La materials with excellent biosafety and hypotoxicity have been prepared and tested as adsorbent. The study was aimed to evaluate the possibility of utilizing BG-La for the adsorptive removal of methylene blue (MB from aqueous solution and test the adsorption and desorption behavior of this new material. The process parameters affecting adsorption behaviors such as pH, contact time, and initial concentration and the photocatalytic degradation of MB were systematically investigated. The result showed that BG-La had excellent removal rate (R of MB, and BG-La showed better photocatalytic effect than undoped mesoporous bioactive glass (BG. Furthermore, the MB loaded BG-La was easily desorbed with acid solution due to its electronegativity and mesoporous structure. The result indicated that these materials can be employed as candidates for removal of dye pollutant owing to their high removal rate, excellent photocatalytic effect, desorption performance, and their reusability.

  4. Dopant-site-dependent scattering by dislocations in epitaxial films of perovskite semiconductor BaSnO3

    Directory of Open Access Journals (Sweden)

    Useong Kim

    2014-05-01

    Full Text Available We studied the conduction mechanism in Sb-doped BaSnO3 epitaxial films, and compared its behavior with that of the mechanism of its counterpart, La-doped BaSnO3. We found that the electron mobility in BaSnO3 films was reduced by almost 7 times when the dopant was changed from La to Sb, despite little change in the effective mass of the carriers. This indicates that the scattering rate of conduction electrons in the BaSnO3 system is strongly affected by the site at which the dopants are located. More importantly, we found that electron scattering by threading dislocations also depends critically on the dopant site. We propose that the large enhancement of scattering by the threading dislocations in Sb-doped BaSnO3 films is caused by the combination effect of the change in the distribution of Sb impurities in the films, the formation of the Sb impurity clusters near the threading dislocations, and the conduction electron clustering near the Sb impurities.

  5. Electron emission from La-doped Pb(Zr,Sn,Ti)O_3 anti-ferroelectrics by pulse electric field and the relevant physical mechanism

    Institute of Scientific and Technical Information of China (English)

    ZHANG LinLi; FENG YuJun; XU Zhuo; SHENG ZhaoXuan

    2009-01-01

    We investigate the characteristics of emission current waves of antiferroelectric cathode material lanthanum-doped lead zirconate stannate titanate (PLZST) triggered by pulse field, and analyze the relationship of the emission current waveforms with the extraction voltage. The close correlation between the triggering pulse polarity and emission current waveform observed evidences the relevant physical process of electron emission. We speculate that the primary emission may result from local phase transition and field emission in the vicinity of triple junctions, and the plasma formation may enhance the electron emission.

  6. Solid-State Synthesis and Thermoelectric Properties of Mg2+xSi0.7Sn0.3Sbm

    Directory of Open Access Journals (Sweden)

    Sin-Wook You

    2013-01-01

    Full Text Available Mg2+xSi0.7Sn0.3Sbm (0≤x≤0.2, m=0 or 0.01 solid solutions have been successfully prepared by mechanical alloying and hot pressing as a solid-state synthesis route. All specimens were identified as phases with antifluorite structure and showed n-type conduction. The electrical conductivity of Mg-excess solid solutions was enhanced due to increased electron concentrations. The absolute values of the Seebeck coefficient varied substantially with Sb doping and excess Mg, which was attributed to the change in carrier concentration. The onset temperature of bipolar conduction was shifted higher with Sb doping and excess Mg. The lowest thermal conductivity of 1.3 W/mK was obtained for Mg2Si0.7Sn0.3Sb0.01. A maximum ZT of 0.64 was achieved at 723 K for Mg2.2Si0.7Sn0.3Sb0.01.

  7. Synthesis and photoluminescence property of La doped Pb{sub 5}(VO{sub 4}){sub 3}OH rod bunches

    Energy Technology Data Exchange (ETDEWEB)

    Xu, Jing; Zhuo, Fengping; Fu, Ya; Wang, Yue; Yuan, Jinhai, E-mail: materialscqust@126.com; Feng, Jian

    2017-05-10

    The pure Pb{sub 5}(VO{sub 4}){sub 3}OH and La doped Pb{sub 5}(VO{sub 4}){sub 3}OH rod bunches have been synthesized by a simple Composite-Hydroxide-Mediated (CHM) method. The characterization of the doped samples with XRD, EDS and XPS indicated that La{sup 3+} ions were incorporated into the Pb{sub 5}(VO{sub 4}){sub 3}OH lattices. The crystallite size of Pb{sub 5}(VO{sub 4}){sub 3}OH:La{sup 3+} rod bunches was smaller than that of pure Pb{sub 5}(VO{sub 4}){sub 3}OH rod bunches. The possible formation mechanism of rod bunches has been discussed. The photoluminescence property of the Pb{sub 5}(VO{sub 4}){sub 3}OH:La{sup 3+} crystals was investigated at room temperature. The crystals exhibited a strong blue luminescence under UV light (353 nm) excitation at room-temperature. The mechanism of excellent luminescence of Pb{sub 5}(VO{sub 4}){sub 3}OH:La{sup 3+} has been deeply discussed. - Highlights: • Pb{sub 5}(VO{sub 4}){sub 3}OH:La{sup 3+} rod bunches have been synthesized by the CHM method. • The possible formation mechanism of rod bunches has been discussed. • The La{sup 3+} doping in the Pb{sub 5}(VO{sub 4}){sub 3}OH rod bunches can improve the blue luminescence property at room temperature remarkably.

  8. Growth and physical properties of highly oriented La-doped (K,Na)NbO{sub 3} ferroelectric thin films

    Energy Technology Data Exchange (ETDEWEB)

    Vendrell, X., E-mail: xavier.vendrell@ub.edu [Departament de Química Inorgànica, Universitat de Barcelona, 08028 Barcelona (Spain); Raymond, O. [Centro de Nanociencias y Nanotecnología, Universidad Nacional Autónoma de México, AP 14, Ensenada 22860, Baja California (Mexico); Ochoa, D.A.; García, J.E. [Department of Applied Physics, Universitat Politècnica de Catalunya — BarcelonaTech, 08034 Barcelona (Spain); Mestres, L. [Departament de Química Inorgànica, Universitat de Barcelona, 08028 Barcelona (Spain)

    2015-02-27

    Lead-free (K,Na)NbO{sub 3} (KNN) and La doped (K,Na)NbO{sub 3} (KNN-La) thin films are grown on SrTiO{sub 3} substrates using the chemical solution deposition method. The effect of adding different amounts of Na and K excess (0–20 mol%) is investigated. The results confirm the necessity of adding 20 mol% excess amounts of Na and K precursor solutions in order to avoid the formation of the secondary phase, K{sub 4}Nb{sub 6}O{sub 17}, as confirmed by X-ray diffraction and Raman spectroscopy. Moreover, when adding a 20 mol% of alkaline metal excess, the thin films are highly textured with out-of-plane preferential orientation in the [100] direction of the [100] orientation of the substrate. Doping with lanthanum results in a decrease of the leakage current density at low electric field, and an increase in the dielectric permittivity across the whole temperature range (80–380 K). Although the (100)-oriented KNN and KNN-La films exhibited rounded hysteresis loops, at low temperatures the films show the typical ferroelectric hysteresis loops. - Highlights: • (K{sub 0.5}Na{sub 0.5})NbO{sub 3} and [(K{sub 0.5}Na{sub 0.5}){sub 0.985}La{sub 0.005}]NbO{sub 3} thin films have been prepared. • The obtained thin films show an excellent (100) preferred orientation. • Doping with lanthanum results in a decrease of the leakage current density. • The dielectric properties are enhanced when doping with lanthanum.

  9. Melt growth and properties of bulk BaSnO3 single crystals

    Science.gov (United States)

    Galazka, Z.; Uecker, R.; Irmscher, K.; Klimm, D.; Bertram, R.; Kwasniewski, A.; Naumann, M.; Schewski, R.; Pietsch, M.; Juda, U.; Fiedler, A.; Albrecht, M.; Ganschow, S.; Markurt, T.; Guguschev, C.; Bickermann, M.

    2017-02-01

    We present the first-time growth of bulk BaSnO3 single crystals from the melt by direct solidification, their basic electrical and optical properties as well as their structural quality. Our measurement of the melting point (MP) of BaSnO3 amounts to 1855 °C  ±  25 K. At this temperature an intensive decomposition and non-stoichiometric evaporation takes place as the partial pressure of SnO(g) is about 90 times higher than that of BaO(g). X ray powder diffraction identified only the BaSnO3 perovskite phase, while narrow rocking curves having a full width at half maximum of 26 arcsec and etch pit densities below 106 cm-2 confirm a high degree of structural perfection of the single crystals. In this respect they surpass the structural properties of those single crystals that were reported in the literature. The electrical conductivity of nominally undoped crystals depends on the growth conditions and ranges from insulating to medium n-type conductivity. After post-growth annealing in an oxidizing atmosphere undoped crystals are generally insulating. Doping the crystals with lanthanum during growth results in a high n-type conductivity. For a La doping concentration of 0.123 wt.% we measured an electron concentration of 3.3  ×  1019 cm-3 and an electron mobility of 219 cm2 V-1 s-1. Based on optical absorption measurements we determined an energy of 3.17  ±  0.04 eV at 5 K and of 2.99  ±  0.04 eV at 297 K for the indirect band gap of BaSnO3.

  10. Melt growth and properties of bulk BaSnO3 single crystals.

    Science.gov (United States)

    Galazka, Z; Uecker, R; Irmscher, K; Klimm, D; Bertram, R; Kwasniewski, A; Naumann, M; Schewski, R; Pietsch, M; Juda, U; Fiedler, A; Albrecht, M; Ganschow, S; Markurt, T; Guguschev, C; Bickermann, M

    2017-02-22

    We present the first-time growth of bulk BaSnO3 single crystals from the melt by direct solidification, their basic electrical and optical properties as well as their structural quality. Our measurement of the melting point (MP) of BaSnO3 amounts to 1855 °C  ±  25 K. At this temperature an intensive decomposition and non-stoichiometric evaporation takes place as the partial pressure of SnO(g) is about 90 times higher than that of BaO(g). X ray powder diffraction identified only the BaSnO3 perovskite phase, while narrow rocking curves having a full width at half maximum of 26 arcsec and etch pit densities below 10(6) cm(-2) confirm a high degree of structural perfection of the single crystals. In this respect they surpass the structural properties of those single crystals that were reported in the literature. The electrical conductivity of nominally undoped crystals depends on the growth conditions and ranges from insulating to medium n-type conductivity. After post-growth annealing in an oxidizing atmosphere undoped crystals are generally insulating. Doping the crystals with lanthanum during growth results in a high n-type conductivity. For a La doping concentration of 0.123 wt.% we measured an electron concentration of 3.3  ×  10(19) cm(-3) and an electron mobility of 219 cm(2) V(-1) s(-1). Based on optical absorption measurements we determined an energy of 3.17  ±  0.04 eV at 5 K and of 2.99  ±  0.04 eV at 297 K for the indirect band gap of BaSnO3.

  11. La-doping effect on spin-orbit coupled Sr2IrO4 probed by x-ray absorption spectroscopy

    Science.gov (United States)

    Cheng, Jie; Sun, Xuanyong; Liu, Shengli; Li, Bin; Wang, Haiyun; Dong, Peng; Wang, Yu; Xu, Wei

    2016-09-01

    Sr2IrO4 was predicted to be an unconventional superconductor upon carrier doping since it highly resembles the high-temperature cuprates. Here, to understand carrier doping effect on spin-orbit coupled Mott insulator Sr2IrO4, the electronic structure and local structure distortion for Sr2 - x La x IrO4 system have been investigated by x-ray absorption spectroscopy. By comparing the intensity of white-line features at the Ir L 2,3 absorption edges, we observe remarkably large branching ratios in La-doped compounds, greater than that of the parent material Sr2IrO4, suggesting a strong spin-orbit interaction for Sr2IrO4-based system. Moreover, extended x-ray absorption fine structure spectra demonstrate more regular IrO6 octahedra, i.e. the weakened crystal electric field versus La-doping. By theoretical calculations, the synergistic effect of regular IrO6 octahedra and electron doping is established, which accounts for the transition from a Mott insulator to a conductive state in Sr2 - x La x IrO4-based system.

  12. Effect of La Doping on Microstructure and Ferroelectric Properties of Bi4Ti3O12 Thin Films Prepared by Sol-gel Method

    Institute of Scientific and Technical Information of China (English)

    FU Chengju; HUANG Zhixiong; GUO Dongyun

    2008-01-01

    The Bi4Ti3O12 and Bi3.25La0.75Ti3O12 thin films were prepared on the Pt/Ti/SiO2/Si substrate using the sol-gel method. The effect of La doping on the microstructure and ferroelectric properties of Bi4Ti3O12 films were investigated. Both the Bi4Ti3O12 and Bi3.25La0.75Ti3O12 thin films exhibited typical bismuth layered perovskite structure. The 2Pr (remanent polarization) value of Bi3.25La0.75Ti3O12 thin films is 18.6 Μc/cm2, which is much larger than that of Bi4Ti3O12 thin films. And the Bi3.25La0.75Ti3O12 films show fatigue-free behavior, while the Bi4Ti3O12 thin films exhibit the fatigue problem. The mechanism of improvement of La doping was discussed.

  13. Preparation, characterization, and photocatalytic activity of La-doped TiO2 supported on activated carbon at the decomposition of methylene orange

    Science.gov (United States)

    Xing, Jun; Sun, Xiaogang; Qiu, Jingping

    2015-06-01

    A composite photocatalyst (La/TiO2/AC) has been prepared by supporting photoactive La-doped TiO2 (La/TiO2) on activated carbon (AC) via hydrolysis of tetrabutyl titanate (Ti(OC4H9)4) with La(NO3)3 · 6H2O and Ti(OC4H9)4 as precursors in the presence of activated carbon. The prepared photocatalysts were characterized by BET surface area, scanning electron microscopy (SEM), X-ray diffraction (XRD) and UV-vis absorption spectroscopy. The photocatalytic activities of the obtained photocatalysts under UV light are estimated by measuring the degradation rate of methylene orange in aqueous solution. The effect of La-doped content on the photocatalytic activity was studied and the result revealed that 0.2 mol % La/TiO2/AC exhibited highest photoactivity. In addition, the recyclability of the prepared photocatalyst was also confirmed, the photocatalytic activity of La/TiO2/AC remains about 86.5% of its activity as-prepared after being used four times. The photocatalyst therefore may be used as effective catalyst in photooxidation reactions and potentially applied for the treatment of water contaminated by organic pollutants.

  14. Thermally stable pn-junctions based on a single transparent perovskite semiconductor BaSnO3

    Science.gov (United States)

    Kim, Hoon Min; Kim, Useong; Park, Chulkwon; Kwon, Hyukwoo; Char, Kookrin

    2016-05-01

    We report p-doping of the BaSnO3 (BSO) by replacing Ba with K. The activation energy of K-dopants is estimated to be about 0.5 eV. We have fabricated pn junctions by using K-doped BSO as a p-type and La-doped BSO as an n-type semiconductor. I-V characteristics of these devices exhibit an ideal rectifying behavior of pn junctions with the ideality factor between 1 and 2, implying high integrity of the BSO materials. Moreover, the junction properties are found to be very stable after repeated high-bias and high-temperature thermal cycling, demonstrating a large potential for optoelectronic functions.

  15. Thermally stable pn-junctions based on a single transparent perovskite semiconductor BaSnO3

    Directory of Open Access Journals (Sweden)

    Hoon Min Kim

    2016-05-01

    Full Text Available We report p-doping of the BaSnO3 (BSO by replacing Ba with K. The activation energy of K-dopants is estimated to be about 0.5 eV. We have fabricated pn junctions by using K-doped BSO as a p-type and La-doped BSO as an n-type semiconductor. I-V characteristics of these devices exhibit an ideal rectifying behavior of pn junctions with the ideality factor between 1 and 2, implying high integrity of the BSO materials. Moreover, the junction properties are found to be very stable after repeated high-bias and high-temperature thermal cycling, demonstrating a large potential for optoelectronic functions.

  16. Piezoelectric properties and diffusion phase transition around PPT of La-doped (Na0.52K0.44Li0.04) Nb0.8Ta0.2O3 lead-free piezoelectric ceramics

    Science.gov (United States)

    Yang, Wenlong; Wang, Li; Li, Haidong; Han, Junsheng; Xiu, Hanjiang; Zhou, Zhongxiang

    2016-10-01

    Lead-free ceramics (Na0.52K0.44Li0.04)1-3xLaxNb0.8Ta0.2O3 (KNLNT-Lax, x=0.00, 0.25, 0.5, 0.75, 1.00, 1.25 mol%) as non-polluting materials were prepared by solid state reaction method. The structure, piezoelectric proprieties and temperature stability of KNLNT ceramic with different La doping concentrations were investigated. The results show a transition from orthorhombic-tetragonal mix phase to tetragonal single phase with the variation of La3+ concentrations. The SEM micrographs of surface and fractured surface show a dense microstructure with few micropores. The La-doped KNLTN ceramic will be an alternative candidate contributes to excellent piezoelectric properties, which are found in the 0.75 mol% La-doped KNLNT ceramics, with d33=215pC/N, kp=42.8%and Qm=89. It has been remarkably improved that the temperature stability of KNLTN-Lax piezoelectric properties at room temperature, and the dielectric relaxation can be observed obviously. The mechanism of La doping was analyzed in terms of valence compensation and polymorphic phase transition (PPT) diffusion. The orthorhombic-tetragonal phase transition around room temperature and the relaxation transition were considered contributing to the excellent piezoelectric performance and improved temperature stability of La3+-doped KNLTN.

  17. The normal state resistivity of CaTh- and La-doped Y(Nd-123 superconductors in the bipolaron model

    Directory of Open Access Journals (Sweden)

    S. Ghorbani

    2007-12-01

    Full Text Available Polycrystalline samples of Y1-2xCaxThxBa2Cu3O7-δ (with 0.00 ≤x ≤ 0.075 and NdBa2-xLaxCu3O7-δ (with 0.0≤x≤ 0.30 were prepared by the standard solid state method. The transport and superconducting properties have been studied by the resistivity measurements as a function of temperature and doping concentration. Data of resistivity as a function of temperature was analyzed in terms of the bipolaran model. The model well described resistivity data up to near the critical temperature. Obtained results suggested that the hole localization is the main reason for superconducting suppression in the charge neutral doped cuprates and the La doped Nd-123 in addition charge filling.

  18. Gd-doped BaSnO{sub 3}: A transparent conducting oxide with localized magnetic moments

    Energy Technology Data Exchange (ETDEWEB)

    Alaan, Urusa S., E-mail: usalaan@gmail.com [Department of Materials Science and Engineering, Stanford University, Stanford, California 94305 (United States); Geballe Laboratory for Advanced Materials, Stanford University, Stanford, California 94305 (United States); Shafer, Padraic; N' Diaye, Alpha T.; Arenholz, Elke [Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Suzuki, Y. [Geballe Laboratory for Advanced Materials, Stanford University, Stanford, California 94305 (United States); Department of Applied Physics, Stanford University, Stanford, California 94305 (United States)

    2016-01-25

    We have synthesized transparent, conducting, paramagnetic stannate thin films via rare-earth doping of BaSnO{sub 3}. Gd{sup 3+} (4f{sup 7}) substitution on the Ba{sup 2+} site results in optical transparency in the visible regime, low resistivities, and high electron mobilities, along with a significant magnetic moment. Pulsed laser deposition was used to stabilize epitaxial Ba{sub 0.96}Gd{sub 0.04}SnO{sub 3} thin films on (001) SrTiO{sub 3} substrates, and compared with Ba{sub 0.96}La{sub 0.04}SnO{sub 3} and undoped BaSnO{sub 3} thin films. Gd as well as La doping schemes result in electron mobilities at room temperature that exceed those of conventional complex oxides, with values as high as 60 cm{sup 2}/V·s (n = 2.5 × 10{sup 20 }cm{sup −3}) and 30 cm{sup 2}/V·s (n = 1 × 10{sup 20 }cm{sup −3}) for La and Gd doping, respectively. The resistivity shows little temperature dependence across a broad temperature range, indicating that in both types of films the transport is not dominated by phonon scattering. Gd-doped BaSnO{sub 3} films have a strong magnetic moment of ∼7 μ{sub B}/Gd ion. Such an optically transparent conductor with localized magnetic moments may unlock opportunities for multifunctional devices in the design of next-generation displays and photovoltaics.

  19. Characteristics of Sn segregation in Ge/GeSn heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Li, H.; Chang, C.; Chen, T. P.; Cheng, H. H., E-mail: hhcheng@ntu.edu.tw [Center for Condensed Matter Sciences and Graduate Institute of Electronics Engineering, National Taiwan University, Taipei 10617, Taiwan (China); Shi, Z. W.; Chen, H. [Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China)

    2014-10-13

    We report an investigation of Sn segregation in Ge/GeSn heterostructures occurred during the growth by molecular beam epitaxy. The measured Sn profile in the Ge layer shows that: (a) the Sn concentration decreases rapidly near the Ge/GeSn interface, and (b) when moving away from the interface, the Sn concentration reduced with a much slower rate. The 1/e decay lengths of the present system are much longer than those of the conventional group IV system of Ge segregation in the Si overlayer because of the smaller kinetic potential as modeled by a self-limited two-state exchange scheme. The demonstration of the Sn segregation shows the material characteristics of the heterostructure, which are needed for the investigation of its optical properties.

  20. Atomic mapping of Ruddlesden-Popper faults in transparent conducting BaSnO3-based thin films.

    Science.gov (United States)

    Wang, W Y; Tang, Y L; Zhu, Y L; Suriyaprakash, J; Xu, Y B; Liu, Y; Gao, B; Cheong, S-W; Ma, X L

    2015-11-03

    Doped BaSnO3 has arisen many interests recently as one of the promising transparent conducting oxides for future applications. Understanding the microstructural characteristics are crucial for the exploration of relevant devices. In this paper, we investigated the microstructural features of 0.001% La doped BaSnO3 thin film using both conventional and aberration corrected transmission electron microscopes. Contrast analysis shows high densities of Ruddlesden-Popper faults in the film, which are on {100} planes with translational displacements of 1/2a  . Atomic EELS element mappings reveal that the Ruddlesden-Popper faults are Ba-O layer terminated, and two kinds of kink structures at the Ruddlesden-Popper faults with different element distributions are also demonstrated. Quantitative analysis on lattice distortions of the Ruddlesden-Popper faults illustrates that the local lattice spacing poses a huge increment of 36%, indicating that large strains exist around the Ruddlesden-Popper faults in the film.

  1. Effect of oxygen vacancy distribution on the thermoelectric properties of La-doped SrTiO3 epitaxial thin films

    KAUST Repository

    Sarath Kumar, S. R.

    2012-12-03

    A detailed study of the role of oxygen vacancies in determining the effective mass and high temperature (300–1000 K) thermoelectricproperties of La-doped epitaxial SrTiO3 thin films is presented. It is observed that at intermediate temperatures, a transition from degenerate to non-degenerate behavior is observed in the Seebeck coefficient, but not electrical conductivity, which is attributed to heterogeneous oxygen non-stoichiometry. Heikes formula is found to be invalid for the films with oxygen vacancies. By fitting the spectroscopic ellipsometry (SE) data, obtained in the range 300–2100 nm, using a Drude-Lorentz dispersion relation with two Lorentz oscillators, the electrical and optical properties of the films are extracted. Using the excellent agreement between the transport properties extracted from SE modeling and direct electrical measurements, we demonstrate that an increase in concentration of oxygen vacancies results in a simultaneous increase of both carrier concentration and electron effective mass, resulting in a higher power factor.

  2. Improved multiferroic properties of La-doped 0.6BiFeO3-0.4SrTiO3 solid solution ceramics

    Institute of Scientific and Technical Information of China (English)

    Ma Zheng-Zheng; Li Jian-Qing; Tian Zhao-Ming; Qiu Yang; Yuan Song-Liu

    2012-01-01

    The 0.6(Bi1-xLax)FeO3-0.4SrTiO3 (x =0,0.1) multiferroic ceramics are prepared by a modified Pechini method to study the effect of substitution of SrTiO3 and La in BiFeO3.The X-ray diffraction patterns confirm the single phase characteristics of all the compositions each with a rhombohedral structure. The magnetic properties of the ceramics are significantly improved by a solid solution with SrTiO3 and substitution of La.The values of the dielectric constant εr and loss tangent tan δ of all the samples decrease with increasing frequency and become constant at room temperature.The La-doped 0.6BiFeO3-0.4SrTiO3 ceramics exhibit improved dielectric and ferroelectric properties,with higher dielectric constant enhanced remnant polarization (Pr) and lower leakage current at room temperature.Compared with a anti-ferromagnetic BiFeO3 compound,the 0.6(Bi0.9La0.1)FeO3-0.4SrTiO3 sample shows the optimal ferromagnetism with remnant magnetization Mr ~ 0.135 emμ/g and ferroelectricity with Pr ~ 5.94 μC/cm2 at room temperature.

  3. All-perovskite transparent high mobility field effect using epitaxial BaSnO3 and LaInO3

    Directory of Open Access Journals (Sweden)

    Useong Kim

    2015-03-01

    Full Text Available We demonstrate an all-perovskite transparent heterojunction field effect transistor made of two lattice-matched perovskite oxides: BaSnO3 and LaInO3. We have developed epitaxial LaInO3 as the gate oxide on top of BaSnO3, which were recently reported to possess high thermal stability and electron mobility when doped with La. We measured the dielectric properties of the epitaxial LaInO3 films, such as the band gap, dielectric constant, and the dielectric breakdown field. Using the LaInO3 as a gate dielectric and the La-doped BaSnO3 as a channel layer, we fabricated field effect device structure. The field effect mobility of such device was higher than 90 cm2 V−1 s−1, the on/off ratio was larger than 107, and the subthreshold swing was 0.65 V dec−1. We discuss the possible origins for such device performance and the future directions for further improvement.

  4. Evaporation Mechanism of Sn and SnS from Liquid Fe: Part II: Residual Site and Evaporation Kinetics via Sn(g) and SnS(g)

    Science.gov (United States)

    Jung, Sung-Hoon; Kang, Youn-Bae; Seo, Jeong-Do; Park, Joong-Kil; Choi, Joo

    2015-02-01

    Evaporation of Sn from molten steel was experimentally investigated for Fe-Sn-S alloy with low initial S (0.0007 chemical reaction controlled the evaporation of Sn. The model equation is able to represent the evaporation of Sn in the forms of Sn(g) and SnS(g) simultaneously, from very low S melt (when there is no S) to very high S melt investigated in the present study up to ~0.9 mass pct. Gradual transition of major evaporation species from SnS(g) to Sn(g) was well accounted for by the developed model.

  5. Electrochemical Performance of a Carbon Nanotube/La-Doped TiO2 Nanocomposite and its Use for Preparation of an Electrochemical Nicotinic Acid Sensor

    Directory of Open Access Journals (Sweden)

    Hanxing Liu

    2008-11-01

    Full Text Available A carbon nanotube/La-doped TiO2 (La-TiO2 nanocomposite (CLTN was prepared by a procedure similar to a complex/adsorption process. Scanning electron microscopy (SEM images show that the La-TiO2 distributes on the carbon nanotube walls. The CLTN was mixed with paraffin to form a CLTN paste for the CLTN paste electrode (CLTNPE. The electrochemical characteristics of CLTNPE were compared with that of conventional carbon electrodes such as the carbon paste electrode (CPE and glass carbon electrode (GC. The CLTNPE exhibits electrochemical activity and was used to investigate the electrochemistry of nicotinic acid (NA. The modified electrode has a strong electrocatalytic effect on the redox of NA. The cyclic voltammetry (CV redox potential of NA at the CLTNPE is 320 mV. The oxidation process of NA on the CLTNPE is pH dependent. A sensitive chronoamperometric response for NA was obtained covering a linear range from 1.0×10-6 mol·L-1 to 1.2×10-4 mol·L-1, with a detection limit of 2.7×10-7 mol·L-1. The NA sensor displays a remarkable sensitivity and stability. The mean recovery of NA in the human urine is 101.8%, with a mean variation coefficient (RSD of 2.6%.

  6. Galaxy Formation and SN Feedback

    CERN Document Server

    Tissera, P B; White, S D M; Springel, V

    2006-01-01

    We present a Supernova (SN) feedback model that succeeds at describing the chemical and energetic effects of SN explosions in galaxy formation simulations. This new SN model has been coupled to GADGET-2 and works within a new multiphase scheme which allows the description of a co-spatial mixture of cold and hot interstellar medium phases. No ad hoc scale-dependent parameters are associated to these SN and multiphase models making them particularly suited to studies of galaxy formation in a cosmological framework. Our SN model succeeds not only in setting a self-regulated star formation activity in galaxies but in triggering collimated chemical-enriched galactic winds. The effects of winds vary with the virial mass of the systems so that the smaller the galaxy, the larger the fraction of swept away gas and the stronger the decrease in its star formation activity. The fact that the fraction of ejected metals exceeds 60 per cent regardless of mass, suggests that SN feedback can be the responsible mechanism of th...

  7. PROTEUS-SN User Manual

    Energy Technology Data Exchange (ETDEWEB)

    Shemon, Emily R. [Argonne National Lab. (ANL), Argonne, IL (United States); Smith, Micheal A. [Argonne National Lab. (ANL), Argonne, IL (United States); Lee, Changho [Argonne National Lab. (ANL), Argonne, IL (United States)

    2016-02-16

    PROTEUS-SN is a three-dimensional, highly scalable, high-fidelity neutron transport code developed at Argonne National Laboratory. The code is applicable to all spectrum reactor transport calculations, particularly those in which a high degree of fidelity is needed either to represent spatial detail or to resolve solution gradients. PROTEUS-SN solves the second order formulation of the transport equation using the continuous Galerkin finite element method in space, the discrete ordinates approximation in angle, and the multigroup approximation in energy. PROTEUS-SN’s parallel methodology permits the efficient decomposition of the problem by both space and angle, permitting large problems to run efficiently on hundreds of thousands of cores. PROTEUS-SN can also be used in serial or on smaller compute clusters (10’s to 100’s of cores) for smaller homogenized problems, although it is generally more computationally expensive than traditional homogenized methodology codes. PROTEUS-SN has been used to model partially homogenized systems, where regions of interest are represented explicitly and other regions are homogenized to reduce the problem size and required computational resources. PROTEUS-SN solves forward and adjoint eigenvalue problems and permits both neutron upscattering and downscattering. An adiabatic kinetics option has recently been included for performing simple time-dependent calculations in addition to standard steady state calculations. PROTEUS-SN handles void and reflective boundary conditions. Multigroup cross sections can be generated externally using the MC2-3 fast reactor multigroup cross section generation code or internally using the cross section application programming interface (API) which can treat the subgroup or resonance table libraries. PROTEUS-SN is written in Fortran 90 and also includes C preprocessor definitions. The code links against the PETSc, METIS, HDF5, and MPICH libraries. It optionally links against the MOAB library and

  8. Laser processing issues of nanosized intermetallic Fe-Sn and metallic Sn particles

    Energy Technology Data Exchange (ETDEWEB)

    Alexandrescu, R., E-mail: ralexandrescu2001@yahoo.co.uk [National Institute for Lasers, Plasma and Radiation Physics Bucharest, POB MG-36, 077125 (Romania); Morjan, I.; Dumitrache, F.; Birjega, R.; Fleaca, C.; Morjan, Iuliana; Scarisoreanu, M.; Luculescu, C.R.; Dutu, E. [National Institute for Lasers, Plasma and Radiation Physics Bucharest, POB MG-36, 077125 (Romania); Kuncser, V.; Filoti, G. [National Institute of Materials Physics, POB MG-7, 077125 Bucharest-Magurele (Romania); Vasile, E. [Metav R and D, Rosetti 31, Bucharest (Romania); Ciupina, V. [Ovidius University of Constanta, Bd. Mamaia 124, Constanta (Romania)

    2012-09-15

    Highlights: Black-Right-Pointing-Pointer Intermetallic Fe-Sn and metallic Sn nanoparticles synthesized by laser pyrolysis. Black-Right-Pointing-Pointer Fe(CO){sub 5} and Sn(CH{sub 3}){sub 4} were used as precursors. Black-Right-Pointing-Pointer FeSn{sub 2}, Sn and Fe{sub 3}SnC phases were identified by XRD. Black-Right-Pointing-Pointer Complex core-shell structural characteristics were found by HRTEM analysis. Black-Right-Pointing-Pointer Higher magnetization was found in samples with increased Fe/Sn atomic ratio. - Abstract: Intermetallic Fe-Sn and nanocrystalline metallic Sn nanoparticles have been successfully synthesized from organic precursors using the laser pyrolysis technique with ethylene as sensitizer. Nano-structured Sn (single phase) was prepared by the pyrolysis of Sn(CH{sub 3}){sub 4} (TMT) vapors. Controlled Fe/Sn atomic ratios, ranging from 0.69 to 1.64 were obtained for the prepared Fe-Sn nanopowders by the control of Fe(CO){sub 5} and TMT flows, respectively. XRD studies evidence three main phases: the tetragonal metallic Sn phase and the intermetallic FeSn{sub 2} phase and, to a much lesser extent, the cubic ternary carbide Fe{sub 3}SnC. Complex core-shell structural characteristics were found by HRTEM analysis. More complete information about the Fe phase distributions in the new intermetallic Fe-Sn nanomaterial is provided by temperature dependent {sup 57}Fe Moessbauer spectroscopy.

  9. Directed and Elliptic Flows in 112Sn+112Sn Collisions

    Institute of Scientific and Technical Information of China (English)

    张虎勇; 马余刚; 余礼平; 沈文庆; 蔡翔舟; 方德清; 钟晨; 韩定定

    2001-01-01

    The directed and elliptic flows in collisions of 112Sn+112Sn at energies from 35 to 90 MeV/nucleon are studied inan isospin-dependent quantum molecule dynamics model. With increasing incident energy, the directed flow risesfrom negative to positive. Its magnitude depends on the nuclear equation of state (EOS). However, the ellipticflow decreases with increasing incident energy and its magnitude is not very sensitive to EOS. Systematic studiesof the impact parameter dependence and the cluster mass dependence are also performed. The study of directedflow at intermediate energies thus provides a means of extracting the information on the nuclear equation of state.

  10. Thermodynamic description of Sn-Y and Mg-Sn-Y systems

    Institute of Scientific and Technical Information of China (English)

    吕东显; 郭翠萍; 李长荣; 杜振民

    2014-01-01

    The thermodynamic optimization of the Sn-Y and Mg-Sn-Y systems was critically carried out by means of the CALPHAD (CALculation of PHAse Diagram) technique. In the Sn-Y system, the solution phases (liquid, bcc, bct and hcp) were described by the substitutional solution model. The compound Sn3Y5, which has a homogeneity range, was treated as the formula (Sn, Y)3(Sn, Y)2Y3 by a three-sublattice model in accordance with the site occupancies. In the Mg-Sn-Y system, the liquid phase was treated as the for-mula (Mg, Sn, Y, Mg2Sn) using an associated solution model, and bcc, bct and hcp were treated as the formula (Mg, Sn, Y). The compound Sn3Y5 was treated as the formula (Sn, Y, Mg)3(Sn, Y, Mg)2Y3. The ternary compound MgSnY was treated as stoichiomet-ric compound. A set of self-consistent thermodynamic parameters of the Mg-Sn-Y system was obtained. The projection of the liq-uidus surfaces and the reaction scheme of the Mg-Sn-Y system were predicted.

  11. La5Zn2Sn

    Directory of Open Access Journals (Sweden)

    Igor Oshchapovsky

    2011-11-01

    Full Text Available A single crystal of pentalanthanum dizinc stannide, La5Zn2Sn, was obtained from the elements in a resistance furnace. It belongs to the Mo5SiB2 structure type, which is a ternary ordered variant of the Cr5B3 structure type. The space is filled by bicapped tetragonal antiprisms from lanthanum atoms around tin atoms sharing their vertices. Zinc atoms fill voids between these bicapped tetragonal antiprisms. All four atoms in the asymmetric unit reside on special positions with the following site symmetries: La1 (..m; La2 (4/m..; Zn (m.2m; Sn (422.

  12. Structural Characteristics of Liquid Sn

    Institute of Scientific and Technical Information of China (English)

    WU Ai-Qing; GUO Li-Jun; LIU Chang-Song; ZHU Zhen-Gang

    2005-01-01

    @@ We investigate the structural properties of liquid Sn. With the help of the internal friction (tan φ) method, it is found that a peak appears in the tan φ - T curve, suggesting that an anomalous discontinuous temperature induced structure change may take place in liquid Sn. From the experimental data of pair distribution functions, we calculate the viscosity η and the excess entropy S and it is found that there are a peak of viscosity in the η - T curve and a bend of excess entropy in the S - T curve, which give a positive support to the appearance of the internal-friction peak in the tan φ - T curve.

  13. SN 2009E: a faint clone of SN 1987A

    DEFF Research Database (Denmark)

    Pastorello, A.; Pumo, M. L.; Navasardyan, H.

    2012-01-01

    Context.1987A-like events form a rare sub-group of hydrogen-rich core-collapse supernovae that are thought to originate from the explosion of blue supergiant stars. Although SN 1987A is the best known supernova, very few objects of this group have been discovered and, hence, studied. Aims. In thi...

  14. Epitaxial growth of strained and unstrained GeSn alloys up to 25% Sn

    Energy Technology Data Exchange (ETDEWEB)

    Oehme, Michael, E-mail: oehme@iht.uni-stuttgart.de; Kostecki, Konrad; Schmid, Marc; Oliveira, Filipe; Kasper, Erich; Schulze, Jörg

    2014-04-30

    Strained and unstrained GeSn layers on Si substrates were grown with Sn contents up to 20% and 25%, respectively. All metastable layer structures were fabricated by means of an ultra-low temperature molecular beam epitaxy process. The useful thickness of the metastable layers for a range of Sn contents, growth temperatures and two different strain values (unstrained, compressive strained) is explored. The epitaxial breakdown thickness which limits the useful thickness range decreases exponentially with increasing growth temperature and Sn concentration. - Highlights: • GeSn epitaxy • GeSn layers with Sn contents up to 25% • Limited layer thickness.

  15. Laser processing issues of nanosized intermetallic Fe-Sn and metallic Sn particles

    Science.gov (United States)

    Alexandrescu, R.; Morjan, I.; Dumitrache, F.; Birjega, R.; Fleaca, C.; Morjan, Iuliana; Scarisoreanu, M.; Luculescu, C. R.; Dutu, E.; Kuncser, V.; Filoti, G.; Vasile, E.; Ciupina, V.

    2012-09-01

    Intermetallic Fe-Sn and nanocrystalline metallic Sn nanoparticles have been successfully synthesized from organic precursors using the laser pyrolysis technique with ethylene as sensitizer. Nano-structured Sn (single phase) was prepared by the pyrolysis of Sn(CH3)4 (TMT) vapors. Controlled Fe/Sn atomic ratios, ranging from 0.69 to 1.64 were obtained for the prepared Fe-Sn nanopowders by the control of Fe(CO)5 and TMT flows, respectively. XRD studies evidence three main phases: the tetragonal metallic Sn phase and the intermetallic FeSn2 phase and, to a much lesser extent, the cubic ternary carbide Fe3SnC. Complex core-shell structural characteristics were found by HRTEM analysis. More complete information about the Fe phase distributions in the new intermetallic Fe-Sn nanomaterial is provided by temperature dependent 57Fe Mössbauer spectroscopy.

  16. Poly(vinylidene fluoride)/ CaCu{sub 3}Ti{sub 4}O{sub 12} and La doped CaCu{sub 3}Ti{sub 4}O{sub 12} composites with improved dielectric and mechanical properties

    Energy Technology Data Exchange (ETDEWEB)

    Srivastava, Anshuman [Department of Ceramic Engineering, Indian Institute of Technology (Banaras Hindu University), Varanasi, 221 005 (India); Jana, Karun Kumar; Maiti, Pralay [School of Material Science and Technology, Indian Institute of Technology (Banaras Hindu University), Varanasi, 221 005 (India); Kumar, Devendra [Department of Ceramic Engineering, Indian Institute of Technology (Banaras Hindu University), Varanasi, 221 005 (India); Parkash, Om, E-mail: oprakash.cer@itbhu.ac.in [Department of Ceramic Engineering, Indian Institute of Technology (Banaras Hindu University), Varanasi, 221 005 (India)

    2015-10-15

    Highlights: • High ϵ′ PVDF/CCTO and La doped CCTO composites prepared by Extrusion. • With addition of ceramic, there is substantial increase in the ϵ′ of matrix PVDF. • Composites exhibit double relaxation behavior. - Abstract: Melt extrusion process has been used to prepare high relative permittivity, ϵ' PVDF–CCTO and PVDF–LaCCTO composites. Phase composition has been studied using powder X-ray diffraction (XRD). Microstructural, dielectric and mechanical properties have also been studied. Young's modulus of PVDF increases with the ceramic reinforcement. Dielectric measurements are made in the frequency range 10{sup −2}–10{sup 6} Hz using two probe Novocontrol impedance analyser (ZG4) from room temp to 120 °C to study the dielectric relaxation. There is a substantial increase in ϵ' of the matrix PVDF on addition of LaCCTO.

  17. Excellent Li-ion storage performances of hierarchical SnO-SnO2 composite powders and SnO nanoplates prepared by one-pot spray pyrolysis

    Science.gov (United States)

    Kim, Jung Hyun; Jeon, Kyung Min; Park, Jin-Sung; Kang, Yun Chan

    2017-08-01

    Hierarchical-structured SnO-SnO2 composite powders and SnO nanoplates with some SnO2 nanorods are prepared by one-pot spray pyrolysis. Dicyandiamide dissolved in the spray solution plays a key role in the preparation of the hierarchical-structured SnO-SnO2 composite powder and SnO nanoplates. The hierarchical-structured SnO-SnO2 composite powders, in which the SnO nanoplates are trapped in the porous SnO2 nanosphere, are prepared by spray pyrolysis at 800 °C. Sufficient conversion of the porous SnO2 nanospheres to SnO at 900 °C results in aggregation-free SnO2 nanoplates. SnO2 nanorods with a spherical nanodroplet at the tip are formed by Ostwald ripening. The hierarchical-structured SnO-SnO2 composite powder having high structural stability during repeated lithium alloying and dealloying reactions, shows superior discharge capacities and rate performances for lithium-ion storage compared to those of the dense-structured SnO2 powders. The discharge capacities of the hierarchical-structured SnO-SnO2 composite powders, SnO nanoplates with SnO2 nanorods, and dense-structured SnO2 powders at a current density of 1 A g-1 for the 300th cycle are 561, 504, and 416 mA h g-1, respectively. The SnO nanoplates with SnO2 nanorods and hierarchical-structured SnO-SnO2 powders deliver high reversible discharge capacities of 433 and 379 mA h g-1 at an extremely high current density of 10 A g-1, respectively.

  18. Structure and vibrational dynamics of interfacial Sn layers in Sn/Si multilayers

    Science.gov (United States)

    Cuenya, B. Roldan; Keune, W.; Sturhahn, W.; Toellner, T. S.; Hu, M. Y.

    2001-12-01

    The structure and vibrational dynamics of room-temperature-grown nanoscale Sn/amorphous (a-)Si multilayers have been studied by x-ray diffraction, Raman scattering, 119Sn Mössbauer spectroscopy, and 119Sn nuclear-resonant inelastic x-ray scattering (NRIXS) of synchrotron radiation. With increasing Sn-layer thickness, the formation of β-Sn was observed, except at the Sn/Si interfaces, where a 10-Å-thick metastable pure amorphous-α-Sn-like layer remains stabilized. By means of NRIXS we have measured the Sn-projected vibrational density of states (VDOS) in these multilayers (in particular, at the interfaces), and in 500-Å-thick epitaxial α-Sn films on InSb(001) as a reference. Further, the Sn-specific Lamb-Mössbauer factor (f factor), mean kinetic energy per atom, mean atomic force constant, and vibrational entropy per atom were obtained. The VDOS of the amorphous-α-Sn-like interface layer is observed to be distinctly different from that of (bulk) α-Sn and β-Sn, and its prominent vibrational energies are found to scale with those of amorphous Ge and Si. The observed small difference in vibrational entropy (ΔS/kB=+0.17+/-0.05 per atom) between α-Sn and interfacial amorphous-α-like Sn does not account for the stability of the latter phase.

  19. Numerical Simulation of Solidification of Chondrules: Formation of Olivine Bars in Mg_2SiO_4-Fe_2SiO_4 System

    Science.gov (United States)

    Miura, H.; Tsukamoto, K.

    2012-03-01

    We numerically simulated formation of olivine bars observed in barred olivine chondrules. The parallel set of bars was reproduced from a platy seed crystal by morphological instability. The calculated Mg/Fe zoning is compared with experiments.

  20. Influence of the Sn oxidation state in ferromagnetic Sn-doped In2O3 nanowires

    Science.gov (United States)

    Maloney, Francis Scott; Wang, Wenyong

    2016-12-01

    Sn-doped indium oxide nanowires were grown using a vapor-liquid-solid technique (VLS). The Sn content of the nanowires was tunable based on the source powder ratios used in the VLS process. The oxidation state of the Sn ions was examined using x-ray photoelectron spectroscopy. It was found that Sn2+ was the dominant ionic species in samples over 6% (atomic percentage) Sn. The nanowires were found to be ferromagnetic at room temperature, and their saturation magnetization increased with increasing Sn concentration, which could be associated with the spin-splitting of a defect band that was encouraged by the imbalance of Sn2+ to Sn4+ species at high Sn concentrations.

  1. La5Zn2Sn

    Science.gov (United States)

    Oshchapovsky, Igor; Pavlyuk, Volodymyr; Dmytriv, Grygoriy; Chumak, Igor; Ehrenberg, Helmut

    2011-01-01

    A single crystal of penta­lanthanum dizinc stannide, La5Zn2Sn, was obtained from the elements in a resistance furnace. It belongs to the Mo5SiB2 structure type, which is a ternary ordered variant of the Cr5B3 structure type. The space is filled by bicapped tetra­gonal anti­prisms from lanthanum atoms around tin atoms sharing their vertices. Zinc atoms fill voids between these bicapped tetra­gonal anti­prisms. All four atoms in the asymmetric unit reside on special positions with the following site symmetries: La1 (..m); La2 (4/m..); Zn (m.2m); Sn (422). PMID:22219730

  2. Controlling the antibacterial activity of CuSn thin films by varying the contents of Sn

    Science.gov (United States)

    Kang, Yujin; Park, Juyun; Kim, Dong-Woo; Kim, Hakjun; Kang, Yong-Cheol

    2016-12-01

    We investigated antibacterial activity of CuSn thin films against Gram positive Staphylococcus aureus (S. aureus). CuSn thin films with different Cu to Sn ratios were deposited on Si(100) by radio frequency (RF) magnetron sputtering method using Cu and Sn metal anodes. The film thickness was fixed at 200 nm by varying the sputtering time and RF power on the metal targets. The antibacterial test was conducted in various conditions such as different contact times and Cu to Sn ratios in the CuSn films. The antibacterial activities of CuSn thin films increased as the ratio of Cu and the contact time between the film and bacteria suspension increased execpt in the case of CuSn-83. The oxidation states of Cu and Sn and the chemical composition of CuSn thin films before and after the antibacterial test were investigated by X-ray photoelectron spectroscopy (XPS). When the contact time was fixed, the Cu species was further oxidized as the RF power on Cu target increased. The intensity of Sn 3d decreased with increasing Cu ratio. When the sample was fixed, the peak intensity of Sn 3d decreased as the contact time increased due to the permeation of Sn into the cell.

  3. Investigation of the Phase Equilibria of Sn-Cu-Au Ternary and Ag-Sn-Cu-Au Quaternary Systems and Interfacial Reactions in Sn-Cu/Au Couples

    Science.gov (United States)

    Yen, Yee-Wen; Jao, Chien-Chung; Hsiao, Hsien-Ming; Lin, Chung-Yung; Lee, Chiapyng

    2007-02-01

    The phase equilibria of the Sn-Cu-Au ternary, Ag-Sn-Cu-Au quaternary systems and interfacial reactions between Sn-Cu alloys and Au were experimentally investigated at specific temperatures in this study. The experimental results indicated that there existed three ternary intermetallic compounds (IMCs) and a complete solid solubility between AuSn and Cu6Sn5 phases in the Sn-Cu-Au ternary system at 200°C. No quaternary IMC was found in the isoplethal section of the Ag-Sn-Cu-Au quaternary system. Three IMCs, AuSn, AuSn2, and AuSn4, were found in all couples. The same three IMCs and (Au,Cu)Sn/(Cu,Au)6Sn5 phases were found in all Sn-Cu/Au couples. The thickness of these reaction layers increased with increasing temperature and time. The mechanism of IMC growth can be described by using the parabolic law. In addition, when the reaction time was extended and the Cu content of the alloy was increased, the AuSn4 phase disappeared gradually. The (Au, Cu)Sn and (Cu,Au)6Sn5 layers played roles as diffusion barriers against Sn in Sn-Cu/Au reaction couple systems.

  4. Piezoelectric properties and diffusion phase transition around PPT of La-doped (Na{sub 0.52}K{sub 0.44}Li{sub 0.04}) Nb{sub 0.8}Ta{sub 0.2}O{sub 3} lead-free piezoelectric ceramics

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Wenlong, E-mail: yangwenlong1983@163.com; Wang, Li; Li, Haidong; Han, Junsheng; Xiu, Hanjiang; Zhou, Zhongxiang

    2016-10-01

    Lead-free ceramics (Na{sub 0.52}K{sub 0.44}Li{sub 0.04}){sub 1−3x}La{sub x}Nb{sub 0.8}Ta{sub 0.2}O{sub 3} (KNLNT-Lax, x=0.00, 0.25, 0.5, 0.75, 1.00, 1.25 mol%) as non-polluting materials were prepared by solid state reaction method. The structure, piezoelectric proprieties and temperature stability of KNLNT ceramic with different La doping concentrations were investigated. The results show a transition from orthorhombic-tetragonal mix phase to tetragonal single phase with the variation of La{sup 3+} concentrations. The SEM micrographs of surface and fractured surface show a dense microstructure with few micropores. The La-doped KNLTN ceramic will be an alternative candidate contributes to excellent piezoelectric properties, which are found in the 0.75 mol% La-doped KNLNT ceramics, with d{sub 33}=215pC/N, k{sub p}=42.8%and Q{sub m}=89. It has been remarkably improved that the temperature stability of KNLTN-Lax piezoelectric properties at room temperature, and the dielectric relaxation can be observed obviously. The mechanism of La doping was analyzed in terms of valence compensation and polymorphic phase transition (PPT) diffusion. The orthorhombic-tetragonal phase transition around room temperature and the relaxation transition were considered contributing to the excellent piezoelectric performance and improved temperature stability of La{sup 3+}-doped KNLTN.

  5. Updated Physical Parameters of SN 2012cg

    Science.gov (United States)

    Marion, G. H.; Challis, P.; Hicken, M.; Mandel, K.; Meyer, S.; Kirshner, R. P.; Foley, R. J.; Friedman, A.; Irwin, J.; Wood-Vasey, W. M.; Wheeler, J. C.; Vinko, J.; Rines, K.; Wilhelmy, S.; Macri, L.

    2012-06-01

    The Harvard-Smithsonian Center for Astrophysics Supernova Group reports photometric and spectroscopic observations of SN 2012cg (ATEL #4115, #4159). We find that SN 2012cg has a slow decline rate and low expansion velocities. BayeSN fits to the data show that SN 2012cg has significant dust extinction (A_v ~ 0.67 mag). We find R_v = 2.7 +/- 0.5, which is consistent with the Milky Way value of 3.1 and mildly inconsistent with the extremely low values reported for some highly reddened SN (e.g., R_v = 1.59 +/- 0.07 for SN 2002cv; Elias-Rosa et al.

  6. Process modules for GeSn nanoelectronics with high Sn-contents

    Science.gov (United States)

    Schulte-Braucks, C.; Glass, S.; Hofmann, E.; Stange, D.; von den Driesch, N.; Hartmann, J. M.; Ikonic, Z.; Zhao, Q. T.; Buca, D.; Mantl, S.

    2017-02-01

    This paper systematically studies GeSn n-FETs, from individual process modules to a complete device. High-k gate stacks and NiGeSn metallic contacts for source and drain are characterized in independent experiments. To study both direct and indirect bandgap semiconductors, a range of 0-14.5 at.% Sn-content GeSn alloys are investigated. Special emphasis is placed on capacitance-voltage (C-V) characteristics and Schottky-barrier optimization. GeSn n-FET devices are presented including temperature dependent I-V characteristics. Finally, as an important step towards implementing GeSn in tunnel-FETs, negative differential resistance in Ge0.87Sn0.13 tunnel-diodes is demonstrated at cryogenic temperatures. The present work provides a base for further optimization of GeSn FETs and novel tunnel FET devices.

  7. SN1987A's Twentieth Anniversary

    Science.gov (United States)

    2007-02-01

    Looking back at 20 Years of Observations of this Supernova with ESO telescopes The unique supernova SN 1987A has been a bonanza for astrophysicists. It provided several observational 'firsts,' like the detection of neutrinos from an exploding star, the observation of the progenitor star on archival photographic plates, the signatures of a non-spherical explosion, the direct observation of the radioactive elements produced during the blast, observation of the formation of dust in the supernova, as well as the detection of circumstellar and interstellar material. ESO PR Photo 08a/07 ESO PR Photo 08a/07 SN1987A in the Large Magellanic Cloud Today, it is exactly twenty years since the explosion of Supernova 1987A in the Large Magellanic Cloud was first observed, at a distance of 163,000 light-years. It was the first naked-eye supernova to be seen for 383 years. Few events in modern astronomy have met with such an enthusiastic response by the scientists and now, after 20 years, it continues to be an extremely exciting object that is further studied by astronomers around the world, in particular using ESO's telescopes. When the first signs of Supernova 1987A, the first supernova of the year 1987, were noticed early on 24 February of that year, it was clear that this would be an unusual event. It was discovered by naked-eye and on a panoramic photographic plate taken with a 10-inch astrograph on Las Campanas in Chile by Oscar Duhalde and Ian Shelton, respectively. A few hours earlier, still on 23 February, two large underground detectors - in Japan and the USA - had registered the passage of high-energy neutrinos. Since SN 1987A exploded in the Large Magellanic Cloud (LMC), it was only accessible to telescopes in the Southern Hemisphere, more particularly in Australia, South Africa, and South America. In Chile, ESO's observatory at La Silla with its armada of telescopes with sizes between 0.5 and 3.6-m, played an important role. ESO PR Photo 08c/07 ESO PR Photo 08c/07 The

  8. Pseudomorphic GeSn/Ge (001) heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Tonkikh, A. A., E-mail: tonkikh@mpi-halle.de [Max Planck Institute of Microstructure Physics (Germany); Talalaev, V. G. [Martin Luther University Halle-Wittenberg, ZIK SiLi-nano (Germany); Werner, P. [Max Planck Institute of Microstructure Physics (Germany)

    2013-11-15

    The synthesis of pseudomorphic GeSn heterostructures on a Ge (001) substrate by molecular-beam epitaxy is described. Investigations by transmission electron microscopy show that the GeSn layers are defect free and possess cubic diamondlike structure. Photoluminescence spectroscopy reveals interband radiative recombination in the GeSn quantum wells, which is identified as indirect transitions between the subbands of heavy electrons and heavy holes. On the basis of experimental data and modeling of the band structure of pseudomorphic GeSn compounds, the lower boundary of the bowing parameter for the indirect band gap is estimated as b{sub L} {>=} 1.47 eV.

  9. Topological crystalline insulator SnTe nanoribbons

    Science.gov (United States)

    Dahal, Bishnu R.; Dulal, Rajendra P.; Pegg, Ian L.; Philip, John

    2017-03-01

    Topological crystalline insulators are systems in which a band inversion that is protected by crystalline mirror symmetry gives rise to nontrivial topological surface states. SnTe is a topological crystalline insulator. It exhibits p-type conductivity due to Sn vacancies and Te antisites, which leads to high carrier density in the bulk. Thus growth of high quality SnTe is a prerequisite for understanding the topological crystalline insulating behavior. We have grown SnTe nanoribbons using a solution method. The width of the SnTe ribbons varies from 500 nm to 2 μm. They exhibit rock salt crystal structure with a lattice parameter of 6.32 Å. The solution method that we have adapted uses low temperature, so the Sn vacancies can be controlled. The solution grown SnTe nanoribbons exhibit strong semiconducting behavior with an activation energy of 240 meV. This activation energy matches with the calculated band gap for SnTe with a lattice parameter of 6.32 Å, which is higher than that reported for bulk SnTe. The higher activation energy makes the thermal excitation of bulk charges very difficult on the surface. As a result, the topological surfaces will be free from the disturbance caused by the thermal excitations

  10. 镧掺杂TiO2降解有机磷农药乐果的研究%Study on Degradation of Organophosphorus Pesticide Dimethoate by La-doped TiO2

    Institute of Scientific and Technical Information of China (English)

    向乾坤; 赵秀琴

    2011-01-01

    [Objective] To discuss the degradation of organophosphorous pesticide dimethoate by modified TiO2. [ Method ] Dimethoate solution was photocatalytic degraded by La-doped TiO2, and the concentration of the solution was detected by ammonium molybdate spectrophotometry before and after degradation. [Result] Doping of La enhanced TiO2' s degradation of dimethoate; during the preparation of catalyst, the best doping amount of La was 0.15% ,and the optimal calcination temperature was 600 ℃; during the photocatalytic degradation of dimethoate solution,the catalyst amount was 2 g/L,initial concentration of dimethoate solution was low,the degradation efficiency was the best when illumination time was 4 h. [ Conclusion ] La-doped TiO2 could effectively degrade low concentration of dimethoate solution.%[目的]探讨改性后的TiO2对市售农药乐果的降解率.[方法]镧掺杂TiO2光催化降解乐果溶液,用钼酸铵分光光度法测定降解前后乐果溶液的浓度.[结果]镧掺杂显著提高了TiO2对乐果的降解率;当催化剂制备时,镧的最佳掺入量为0.15%,最佳煅烧温度为600℃;催化剂光催化降解乐果溶液时,在催化剂投入量为2 g/L、乐果溶液的起始浓度较低、光照时间为4h时,乐果溶液的降解效率最好.[结论]镧掺杂后的TiO2能有效降解低浓度乐果溶液.

  11. The melting diagram of the Ti-Dy-Sn system below 40 at.% Sn

    Energy Technology Data Exchange (ETDEWEB)

    Fartushna, Y.; Meleshevich, K.; Samelyuk, A.; Bulanova, M. [Frantsevich Inst. for Problems of Materials Science of NASU, Kiev (Ukraine)

    2010-10-15

    Phase equilibria in the Ti-Dy-Sn system below 40 at.% Sn were studied using differential thermal analysis, X-ray diffraction, metallography and electron microprobe. The partial liquidus and solidus projections and the melting diagram (liquidus + solidus) were constructed. A new ternary compound {tau} with composition Ti{sub 4.2-4.3}Dy{sub 0.8-0.7}Sn{sub {approx_lt}3}, found by us previously, melts congruently above 1543 C and coexists with all the phases based on the binary compounds of the boundary binaries in the concentration interval studied. The liquidus surface is characterized by primary crystallization regions of ({beta}Ti), ({beta}Dy), ({alpha}Dy), (Ti{sub 3}Sn), (Ti{sub 2}Sn), (Ti{sub 5}Sn{sub 3}), (Dy{sub 5}Sn{sub 3}) and {tau}. Five three-phase fields in the solidus surface result from three eutectic and two transition type invariant four-phase equilibria: L{sub E{sub 1}} {r_reversible} ({beta}Ti) + (Ti{sub 3}Sn) + (Dy{sub 5}Sn{sub 3}), L{sub E{sub 2}} {r_reversible} (Ti{sub 3}Sn) + {tau} + (Dy{sub 5}Sn{sub 3}), L{sub E{sub 3}} {r_reversible} ({beta}Ti) + ({alpha}Dy) + (Dy{sub 5}Sn{sub 3}), L{sub U{sub 1}} + (Ti{sub 2}Sn) {r_reversible} (Ti{sub 3}Sn) + {tau} and L{sub U{sub 2}} + (Ti{sub 2}Sn) {r_reversible} (Ti{sub 5}Sn{sub 3}) + {tau} at 1524, 1500, 1150, 1543 and 1498 C, respectively. In the two-phase areas ({beta}Ti) + (Dy{sub 5}Sn{sub 3}),(Ti{sub 3}Sn) + (Dy{sub 5}Sn{sub 3}), (Ti{sub 2}Sn) + {tau} and {tau} + (Dy{sub 5}Sn{sub 3}) the solidus surface has the temperature maxima at 1620, 1540, > 1543 and > 1500 C, respectively. (orig.)

  12. A Luminous Peculiar Type Ia Supernova SN 2011hr: More Like SN 1991T or SN 2007if?

    CERN Document Server

    Zhang, Jujia; Sasdelli, Michele; Zhang, Tianmeng; Liu, Zhengweei; Mazzali, Paolo A; Meng, Xiangcun; Maeda, Keiichi; Chen, Juncheng; Huang, Fang; Zhao, Xulin; Zhang, Kaicheng; Zhai, Qian; Pian, Elena; Wang, Bo; Chang, Liang; Yi, Weimin; Wang, Chuan-Jun; Wang, Xueli; Xin, Yuxin; Wang, Jianguo; Lun, Baoli; Zheng, Xiangming; Zhang, Xiliang; Fan, Yufeng; Bai, Jinming

    2015-01-01

    Photometric and spectroscopic observations of a slowly declining, luminous type Ia supernova (SN Ia) 2011hr in the star-burst galaxy NGC 2691 are presented. SN~2011hr is found to peak at $M_{B}=-19.84 \\pm 0.40\\,\\rm{mag}$, with a post-maximum decline rate $\\Delta$m$_{15}$(B) = 0.92 $\\pm$ 0.03\\,$\\rm{mag}$. From the maximum-light bolometric luminosity, $L=(2.30 \\pm 0.90) \\times 10^{43}\\,\\rm{erg\\,s^{-1}}$, we estimate the mass of synthesized \\Nifs\\ in SN~2011hr to be $M(\\rm{^{56}Ni})=1.11 \\pm 0.43\\,M_{\\sun}$. SN 2011hr appears more luminous than SN 1991T at around maximum light, and the absorption features from its intermediate-mass elements (IMEs) are noticeably weaker than the latter at similar phases. Spectral modelling suggests that SN 2011hr has the IMEs of $\\sim$\\,0.07 M$_{\\sun}$ in the outer ejecta, which is much lower than the typical value of normal SNe Ia (i.e., 0.3 -- 0.4 M$_{\\sun}$) and is also lower than the value of SN 1991T (i.e., $\\sim$\\,0.18 M$_{\\sun}$). These results indicate that SN~2011hr may ...

  13. Process Modules for GeSn Nanoelectronics with high Sn-contents

    OpenAIRE

    Schulte-Braucks, C; Glass, S; Hofmann, E; Stange, D; Von Den Driesch, N; Hartmann, JM; Ikonic, Z; Zhao, GT; Buca, D.; Mantl, S

    2017-01-01

    This paper systematically studies GeSn n-FETs, from individual process modules to a complete device. High-k gate stacks and NiGeSn metallic contacts for source and drain are characterized in independent experiments. To study both direct and indirect bandgap semiconductors, a range of 0 at.% to 14.5 at.% Sn-content GeSn alloys are investigated. Special emphasis is placed on capacitance-voltage (C-V) characteristics and Schottky-barrier optimization. GeSn n-FET devices are presented including t...

  14. Effect of Sn Content in a CuSnZn Metal Precursor on Formation of MoSe2 Film during Selenization in Se+SnSe Vapor

    OpenAIRE

    Liyong Yao; Jianping Ao; Ming-Jer Jeng; Jinlian Bi; Shoushuai Gao; Guozhong Sun; Qing He; Zhiqiang Zhou; Yun Sun; Liann-Be Chang

    2016-01-01

    The preparation of Cu2ZnSnSe4 (CZTSe) thin films by the selenization of an electrodeposited copper–tin–zinc (CuSnZn) precursor with various Sn contents in low-pressure Se+SnSex vapor was studied. Scanning electron microscope (SEM) and energy dispersive spectroscopy (EDS) measurements revealed that the Sn content of the precursor that is used in selenization in a low-pressure Se+SnSex vapor atmosphere only slightly affects the elemental composition of the formed CZTSe films. However, the Sn co...

  15. GeSn/SiGeSn photonic devices for mid-infrared applications: experiments and calculations

    Science.gov (United States)

    Han, Genquan; Zhang, Qingfang; Liu, Yan; Zhang, Chunfu; Hao, Yue

    2016-11-01

    In this work, a fully strained GeSn photodetector with Sn atom percent of 8% is fabricated on Ge buffer on Si(001) substrate. The wavelength λ of light signals with obvious optical response for Ge0.92Sn0.08 photodetector is extended to 2 μm. The impacts of compressive strain introduced during the epitaxial growth of GeSn on Ge/Si are studied by simulation. Besides, the tensile strain engineering of GeSn photonic devices is also investigated. Lattice-matched GeSn/SiGeSn double heterostructure light emitting diodes (LEDs) with Si3N4 tensile liner stressor are designed to promote the further mid-infrared applications of GeSn photonic devices. With the releasing of the residual stress in Si3N4 liner, a large biaxial tensile strain is induced in GeSn active layer. Under biaxial tensile strain, the spontaneous emission rate rsp and internal quantum efficiency ηIQE for GeSn/SiGeSn LED are significantly improved.

  16. Studying superconducting Nb3Sn wire

    CERN Multimedia

    AUTHOR|(CDS)2099575

    2015-01-01

    Studying superconducting Nb3Sn wire. From the current experience from LHC and HL-LHC we know that the performance requirements for Nb3Sn conductor for future circular collider are challenging and should exceed that of present state-of-the-art materials.

  17. Correlation Between Sn Grain Orientation and Corrosion in Sn-Ag-Cu Solder Interconnects

    Science.gov (United States)

    Lee, Tae-Kyu; Liu, Bo; Zhou, Bite; Bieler, Thomas; Liu, Kuo-Chuan

    2011-09-01

    The impact of a marine environment on Sn-Ag-Cu interconnect reliability is examined using salt spray exposure followed by thermal cycling. Sn-Ag-Cu solder alloy wafer-level packages, with and without pretreatment with 5% NaCl salt spray, were thermally cycled to failure. The prior salt spray reduced the characteristic lifetime of the Sn-Ag-Cu solder joints by over 43%. Although Sn-based materials show strong resistance to corrosion, the nature of localized corroded areas at critical locations in the solder joint caused significant degradation in the Sn-Ag-Cu solder joints. An important link between the corrosion path and Sn grain orientation was observed using orientation imaging microscopy (OIM). A strong correlation between the corrosion path and grain orientation was identified, indicating that the corrosion attack preferentially followed the basal plane of the Sn lattice.

  18. Effect of graphite content on electrochemical performance of Sn-SnSb/graphite composite powders

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    Sn-SnSb alloy was synthesized by reducing a aqueous solution containing Sn( Ⅱ ) and Sb(Ⅲ) salts with NaBH4 in the presence of sodium citrate. The product was characterized by X-ray diffractometry(XRD) and scanning electron microscopy(SEM).Sn-SnSb/graphite composite powders were prepared by mechanical milling and the mass fraction of graphite was increased from20% to 50%. The effect of graphite content on the electrochemical performance of Sn-SnSb/graphite composite electrode was investigated. The results show the increase of graphite content is in favor of enhancing the first charge-discharge efficiency and improving the cycle performance, but the capacity of the composite electrode decreases with increasing content of graphite.

  19. Preparation of Ce- and La-Doped Li₄Ti₅O12 Nanosheets and Their Electrochemical Performance in Li Half Cell and Li₄Ti₅O12/LiFePO₄ Full Cell Batteries.

    Science.gov (United States)

    Qin, Meng; Li, Yueming; Lv, Xiao-Jun

    2017-06-20

    This work reports on the synthesis of rare earth-doped Li₄Ti₅O12 nanosheets with high electrochemical performance as anode material both in Li half and Li₄Ti₅O12/LiFePO₄ full cell batteries. Through the combination of decreasing the particle size and doping by rare earth atoms (Ce and La), Ce and La doped Li₄Ti₅O12 nanosheets show the excellent electrochemical performance in terms of high specific capacity, good cycling stability and excellent rate performance in half cells. Notably, the Ce-doped Li₄Ti₅O12 shows good electrochemical performance as anode in a full cell which LiFePO₄ was used as cathode. The superior electrochemical performance can be attributed to doping as well as the nanosized particle, which facilitates transportation of the lithium ion and electron transportation. This research shows that the rare earth doped Li₄Ti₅O12 nanosheets can be suitable as a high rate performance anode material in lithium-ion batteries.

  20. Laser spectroscopy of neutron deficient Sn isotopes

    CERN Multimedia

    We propose to study the ground state properties of neutron-deficient Sn isotopes towards the doubly-magic nucleus $^{100}$Sn. Nuclear spins, changes in the rms charge radii and electromagnetic moments of $^{101-121}$Sn will be measured by laser spectroscopy using the CRIS experimental beam line. These ground-state properties will help to clarify the evolution of nuclear structure properties approaching the $\\textit{N = Z =}$ 50 shell closures. The Sn isotopic chain is currently the frontier for the application of state-of-the-art ab-initio calculations. Our knowledge of the nuclear structure of the Sn isotopes will set a benchmark for the advances of many-body methods, and will provide an important test for modern descriptions of the nuclear force.

  1. Electrodeposition of nanostructured Sn-Zn coatings

    Science.gov (United States)

    Salhi, Y.; Cherrouf, S.; Cherkaoui, M.; Abdelouahdi, K.

    2016-03-01

    The electrodeposition of Sn-Zn coating at ambient temperature was investigated. The bath consists of metal salts SnCl2·2H2O and ZnSO4·7H2O and sodium citrate (NaC6H5Na3O7·2H2O) as complexing agent. To prevent precipitation, the pH is fixed at 5. Reducing tin and zinc through Sncit2- and ZnHcit- complex respectively is confirmed by the presence of two cathodic peaks on the voltammogram. The kinetic of tin (II) reduction process is limited by the SnCit2- dissociation. The SEM and TEM observations have showed that the coating consists of a uniform Sn-Zn layer composed of fine grains on which tin aggregates grow up. XRD revealed peaks corresponding to the hexagonal Zn phase and the tetragonal β-Sn phase.

  2. Application of 119Sn CPMG MAS NMR for Fast Characterization of Sn Sites in Zeolites with Natural 119Sn Isotope Abundance

    DEFF Research Database (Denmark)

    G. Kolyagin, Yury; V. Yakimo, Alexander; Tolborg, Søren

    2016-01-01

    119Sn CPMG MAS NMR is demonstrated to be a fast and efficient method for characterization of Sn-sites in Sn-containing zeolites. Tuning of the CPMG echo-train sequence decreases the experimental time by a factor of 5–40 in the case of as-synthesized and hydrated Sn-BEA samples and by 3 orders......-BEA zeolites with natural 119Sn isotope abundance using conventional MAS NMR equipment....

  3. Synthesis of Epitaxial Films Based on Ge-Si-Sn Materials with Ge/GeSn, Ge/GeSiSn, and GeSn/GeSiSn Heterojunctions

    Science.gov (United States)

    Timofeev, V. A.; Kokhanenko, A. P.; Nikiforov, A. I.; Mashanov, V. I.; Tuktamyshev, A. R.; Loshkarev, I. D.

    2015-11-01

    Results of investigations into the synthesis of heterostructures based on Ge-Si-Sn materials by the method of low-temperature molecular beam epitaxy are presented. The formation of epitaxial films during structure growth has been controlled by the reflection high-energy electron diffraction method. Films with Ge/GeSn, Ge/GeSiSn, and GeSn/GeSiSn heterojunctions are grown with Sn content changing from 2 to 10 % at temperatures in the interval 150-350°C. The stressed state, the composition, and the lattice parameter are studied by the x-ray diffraction method using Omega-scan curves and reciprocal space maps. A tensile strain in the Ge film during Ge/Ge0.9Sn0.1/Si structure growth has reached 0.86%.

  4. Direct observation of Sn crystal growth during the lithiation and delithiation processes of SnO(2) nanowires.

    Science.gov (United States)

    Zhang, Li Qiang; Liu, Xiao Hua; Perng, Ya-Chuan; Cho, Jea; Chang, Jane P; Mao, Scott X; Ye, Zhi Zhen; Huang, Jian Yu

    2012-11-01

    Tin (Sn) crystal growth on Sn-based anodes in lithium ion batteries is hazardous for reasons such as possible short-circuit failure by Sn whiskers and Sn-catalyzed electrolyte decomposition, but the growth mechanism of Sn crystals during battery cycling is not clear. Here we report different growth mechanisms of Sn crystal during the lithiation and delithiation processes of SnO(2) nanowires revealed by in situ transmission electron microscopy (TEM). Large spherical Sn nanoparticles with sizes of 20-200nm grew instantaneously upon lithiation of a single-crystalline SnO(2) nanowire at large current density (j>20A/cm(2)), which suppressed formation of the Li(x)Sn alloy but promoted agglomeration of Sn atoms. Control experiments of Joule-heating (j≈2400A/cm(2)) the pristine SnO(2) nanowires resulted in melting of the SnO(2) nanowires but not Sn particle growth, indicating that the abnormal Sn particle growth was induced by both chemical reduction (i.e., breaking the SnO(2) lattice to produce Sn atoms) and agglomeration of the Sn atoms assisted by Joule heating. Intriguingly, Sn crystals grew out of the nanowire surface via a different "squeeze-out" mechanism during delithiation of the lithiated SnO(2) nanowires coated with an ultra-thin solid electrolyte LiAlSiO(x) layer. It is attributed to the negative stress gradient generated by the fast Li extraction in the surface region through the Li(+)-conducting LiAlSiO(x) layer. Our previous studies showed that Sn precipitation does not occur in the carbon-coated SnO(2) nanowires, highlighting the effect of nanoengineering on tailoring the electrochemical reaction kinetics to suppress the hazardous Sn whiskers or nanoparticles formation in a lithium ion battery.

  5. Dynamic viscosities of pure tin and Sn-Ag, Sn-Cu, and Sn-Ag-Cu eutectic melts

    Science.gov (United States)

    Rozhitsina, E. V.; Gruner, S.; Kaban, I.; Hoyer, W.; Sidorov, V. E.; Popel', P. S.

    2011-02-01

    The dynamic viscosities of the melts of pure tin and eutectic Sn-Ag, Sn-Cu, and Sn-Ag-Cu alloys are studied in heating followed by cooling, and the maximum heating temperature was 1200°C. An irreversible decrease in the viscosity is found in the temperature range 800-1000°C in the polytherms of all melts. This finding is related to the loss of a local order in a melt and can be used to develop temperature regimes for the production of lead-free solders.

  6. 119Sn Mössbauer studies on ferromagnetic and photocatalytic Sn-TiO2 nanocrystals

    Science.gov (United States)

    Ganeshraja, Ayyakannu Sundaram; Nomura, Kiyoshi; Wang, Junhu

    2016-12-01

    Diluted Sn doped TiO2 nanocrystals (Sn/Ti ratio: x ≤ 1.37 %) were synthesized by a simple hydrothermal method using pure reagents without any surfactant and dispersant material. The XRD of these samples showed an anatase phase, anatase and rutile mixed phases, and a rutile phase of TiO2 and SnO2 with the increase of Sn dopant concentrations. 119Sn Mössbauer spectra gave the broad peaks, which were decomposed into doublets and sextets because almost all these samples showed magnetic hysteresis even at room temperature. The titanium oxides doped with x ≤ 0.12 % showed the relatively large magnetic hysteresis and high photocatalytic activity. Mössbauer spectra of samples doped with x > 0.3 % were analyzed by one doublet and two sextets although the samples showed weak ferromagnetism. Three kinds of Sn species may be distinguished as Sn 4+ substituted TiO2 and two different magnetic arrangements of Sn doped TiO2: one with more oxygen defects and other at the interface of TiO2 and precipitated SnO2 containing Ti atoms. The correlation between various amounts of Sn sites and photocatalytic activity and/ or magnetic property was discussed.

  7. Growth of highly textured SnS on mica using an SnSe buffer layer

    Energy Technology Data Exchange (ETDEWEB)

    Wang, S.F.; Fong, W.K.; Wang, W.; Surya, C., E-mail: charles.surya@polyu.edu.hk

    2014-08-01

    We report the growth of SnS thin films on mica substrates by molecular beam epitaxy. Excellent 2D layered structure and strong (001) texture were observed with a record low rocking curve full width at half maximum of ∼ 0.101° for the SnS(004) diffraction. An interface model is used to investigate the nucleation of SnS on mica which indicates the co-existence of six pairs of lateral growth orientations and is in excellent agreement with the experimental Φ-scan measurements indicating 12 peaks separated by 30° from each other. To control the lateral growth of the SnS epilayers we investigate the utilization of a thin SnSe buffer layer deposited on the mica substrate prior to the growth of the SnS thin film. The excellent lattice match between SnSe and mica enhances the alignment of the nucleation of SnS and suppresses the minor lateral orientations along the mica[110] direction and its orthogonal axis. Detailed low-frequency noise measurement was performed to characterize the trap density in the films and our results clearly demonstrate substantial reduction in the density of the localized states in the SnS epilayer with the use of an SnSe buffer layer. - Highlights: • A record low rocking curve FWHM for deposited SnS on mica • Investigation of the nucleation of SnS on mica using the interface model • Investigation of nucleation mechanism by phi-scan measurement • Grain boundary formation from crystallites of various nucleation orientations • Suppression of nucleation orientations using an SnSe buffer layer.

  8. Beta decay of {sup 101}Sn

    Energy Technology Data Exchange (ETDEWEB)

    Kavatsyuk, O.; Kavatsyuk, M. [Gesellschaft fuer Schwerionenforschung, Damrstadt (Germany); National Taras Shevchenko Univ. of Kyiv (Ukraine); Mazzocchi, C. [Gesellschaft fuer Schwerionenforschung, Damrstadt (Germany); Univ. of Tennessee, Knoxville (United States); Janas, Z.; Karny, M.; Miernik, K.; Plochocki, A.; Zylicz, J. [University of Warsaw (Poland); Banu, A.; Becker, F.; Bruechle, W.; Doering, J.; Gorska, M.; Grawe, H.; Klepper, O.; Kirchner, R.; Plettner, C.; Roeckl, E.; Schaedel, M. [Gesellschaft fuer Schwerionenforschung, Darmstadt, Darmstadt (Germany); Batist, L. [St. Petersburg Nuclear Physics Institute (Russian Federation); Blazhev, A. [Gesellschaft fuer Schwerionenforschung, Damrstadt (Germany); Univ. of Sofia (Bulgaria); Faestermann, T. [Technische Universitaet Muenchen (Germany); Jungclaus, A. [Instituto Estructura de la Materia, CSIC (Spain); Departamento de Fisica Teorica, UAM, Madrid (Spain); La Commara, M.; Romoli, M. [Universita ' ' Federico II' ' , Napoli (Italy); INFN, Napoli (Italy); Mukha, I. [Gesellschaft fuer Schwerionenforschung, Damrstadt (Germany); Kurchatov Inst., Moscow (Russian Federation); Rykaczewski, K. [Oak Ridge National Laboratory, Oak Ridge (United States); Schmidt, K. [Continental Teves AG and Co., Frankfurt am Main (Germany); Schwengner, R. [Institut fuer Kern- und Hadronenphysik, Forschungszentrum Rossendorf, Dresden (Germany)

    2007-03-15

    The {beta} decay of the very neutron-deficient isotope {sup 101}Sn was studied at the GSI on-line mass separator using silicon detectors for recording charged particles and germanium detectors for {gamma}-ray spectroscopy. Based on the {beta}-delayed proton data the production cross-section of {sup 101}Sn in the {sup 50}Cr+{sup 58}Ni fusion-evaporation reaction was determined to be about 60nb. The half-life of {sup 101}Sn was measured to be 1.9(3)s. For the first time {beta}-delayed {gamma}-rays of {sup 101}Sn were tentatively identified, yielding weak evidence for a cascade of 352 and 1065keV transitions in {sup 101}In. The results for the {sup 101}Sn decay as well as those from previous work on the {sup 103}Sn decay are discussed by comparing them to predictions obtained from shell model calculations employing a new interaction in the {sup 88}Sr to {sup 132}Sn model space. (orig.)

  9. Axions and SN1987A

    Science.gov (United States)

    Burrows, Adam; Turner, Michael S.; Brinkmann, R. P.

    1988-01-01

    The effect of free-streaming axion emission on numerical models for the cooling of the newly born neutron star associated with SN1987A is considered. It is found that for an axion mass of greater than approximately 10 to the -3 eV, axion emission shortens the duration of the expected neutrino burst so significantly that it would be inconsistent with the neutrino observations made by the Kamiokande II and Irvine-Michigan-Brookhaven detectors. However, the possibility has not been investigated that axion trapping (which should occur for masses greater than or equal to 0.02 eV) sufficiently reduces axion emission so that axion masses greater than approximately 2 eV would be consistent with the neutrino observations.

  10. Comparison of Catabolic Rates of sn-1, sn-2, and sn-3 Fatty Acids in Triacylglycerols Using (13)CO2 Breath Test in Mice.

    Science.gov (United States)

    Beppu, Fumiaki; Kawamatsu, Takashi; Yamatani, Yoshio; Nagai, Toshiharu; Yoshinaga, Kazuaki; Mizobe, Hoyo; Yoshida, Akihiko; Kubo, Atsushi; Kanda, Jota; Gotoh, Naohiro

    2017-01-01

    Fatty acids in triacylglycerols (TAGs) are catabolized after digestion. However, the catabolic rates of the fatty acids at the sn-1, sn-2, and sn-3 positions of TAGs have not been compared. To elucidate the differences, we studied the catabolic rates of (13)C-labeled palmitic acid, oleic acid, and capric acid at the sn-1, sn-2, or sn-3 position of TAGs using isotope-ratio mass spectrometry. Specifically, we measured the (13)C-to-(12)C ratio in CO2 (Δ(13)C (‰)) exhaled by mice. For all analyzed fatty acids, we observed significant differences between sn-2 and other binding positions. In contrast, no significant difference was detected between the sn-1 and sn-3 positions. These results indicated that the catabolic rates of fatty acids are strongly influenced by their positions in TAGs.

  11. Monodisperse and inorganically capped Sn and Sn/SnO2 nanocrystals for high-performance Li-ion battery anodes.

    Science.gov (United States)

    Kravchyk, Kostiantyn; Protesescu, Loredana; Bodnarchuk, Maryna I; Krumeich, Frank; Yarema, Maksym; Walter, Marc; Guntlin, Christoph; Kovalenko, Maksym V

    2013-03-20

    We report a facile synthesis of highly monodisperse colloidal Sn and Sn/SnO2 nanocrystals with mean sizes tunable over the range 9-23 nm and size distributions below 10%. For testing the utility of Sn/SnO2 nanocrystals as an active anode material in Li-ion batteries, a simple ligand-exchange procedure using inorganic capping ligands was applied to facilitate electronic connectivity within the components of the nanocrystalline electrode. Electrochemical measurements demonstrated that 10 nm Sn/SnO2 nanocrystals enable high Li insertion/removal cycling stability, in striking contrast to commercial 100-150 nm powders of Sn and SnO2. In particular, reversible Li-storage capacities above 700 mA h g(-1) were obtained after 100 cycles of deep charging (0.005-2 V) at a relatively high current of 1000 mA h g(-1).

  12. Effect of Sn Content in a CuSnZn Metal Precursor on Formation of MoSe2 Film during Selenization in Se+SnSe Vapor

    Directory of Open Access Journals (Sweden)

    Liyong Yao

    2016-03-01

    Full Text Available The preparation of Cu2ZnSnSe4 (CZTSe thin films by the selenization of an electrodeposited copper–tin–zinc (CuSnZn precursor with various Sn contents in low-pressure Se+SnSex vapor was studied. Scanning electron microscope (SEM and energy dispersive spectroscopy (EDS measurements revealed that the Sn content of the precursor that is used in selenization in a low-pressure Se+SnSex vapor atmosphere only slightly affects the elemental composition of the formed CZTSe films. However, the Sn content of the precursor significantly affects the grain size and surface morphology of CZTSe films. A metal precursor with a very Sn-poor composition produces CZTSe films with large grains and a rough surface, while a metal precursor with a very Sn-rich composition procures CZTSe films with small grains and a compact surface. X-ray diffraction (XRD and SEM revealed that the metal precursor with a Sn-rich composition can grow a thicker MoSe2 thin film at CZTSe/Mo interface than one with a Sn-poor composition, possibly because excess Sn in the precursor may catalyze the formation of MoSe2 thin film. A CZTSe solar cell with an efficiency of 7.94%was realized by using an electrodeposited metal precursor with a Sn/Cu ratio of 0.5 in selenization in a low-pressure Se+SnSex vapor.

  13. Single-Particle States in $^{133}$Sn

    CERN Multimedia

    Huck, A

    2002-01-01

    % IS338 \\\\ \\\\ It is suggested to investigate the $\\beta^- $-decay of $^{133}$In and $^{134}$In in order to determine the single-particle states in $^{133}$Sn, which are so far unknown and needed for the shell-model description of the region close to $^{132}$Sn. Large hyper-pure Ge-detectors will be used for the $\\gamma$-ray spectroscopy. In the experiments with $^{134}$In, delayed neutrons in coincidence with $\\gamma$-rays from excited states in $^{133}$Sn provide the opportunity for a very selective detection of the states in question.

  14. Abnormal growth of Ag3Sn intermetallic compounds in Sn-Ag lead-free solder

    Institute of Scientific and Technical Information of China (English)

    SHEN Jun; LIU Yongchang; GAO Houxiu

    2006-01-01

    The abnormal growth of Ag3Sn intermetallic compounds in eutectic Sn-3.5% Ag solder was investigated through high-temperature aging treatment. Microstructural evolutions of this solder before and after the aging treatment were observed by optical microscopy and scanning electron microscopy. Precise differential thermal analysis was made to study the changes in enthalpies of the solder under different conditions. The results reveal that the water-cooled solder is in metastable thermodynamic state due to the high free energy of Ag3Sn nanoparticles, which sporadically distribute in the matrix as second-phase. The second-phase Ag3Sn nanoparticles aggregate rapidly and grow to form bulk intermetallic compounds due to the migration of grain boundary between primary Sn-rich phase and the Ag3Sn nanoparticles during high temperature aging treatment.

  15. Influence of Solid Fraction on Gravity Segregation of Sn in Al-20Sn Alloy Casting

    Institute of Scientific and Technical Information of China (English)

    2000-01-01

    The influence of solid fraction of Al-20Sn alloy mushy on gravity segregation of Sn in casting was studied and, the relationship between solid fraction and the temperature of alloy mushy and that between solid fraction of alloy mushy and size of Sn particle in ingot were determined. The results show that the relationship between solid fraction and the temperature of alloy mushy was fs=1683-4.86t+0.0035t2. The extent of gravity segregation of Sn in casting reduced gradually with the increasing of solid fraction of alloy mushy. When solid fraction of alloy mushy was arger than 40%, the gravity segregation of Sn in casting could be removed basically, and the relationship between solid fraction of alloy mushy and size of Sn particle in ingot was s=-0.64fs+70.8.

  16. Thermodynamic and surface properties of Sb-Sn and In-Sn liquid alloys

    Indian Academy of Sciences (India)

    B C Anusionwu

    2006-08-01

    The thermodynamic properties of Sb-Sn and In-Sn liquid alloys have been studied using the quasi-chemical model for compound forming binary alloys and that for simple regular alloys. The concentration fluctuation cc(0) and the Warren-Cowley short-range order parameter (1) were determined for the whole concentration range at a temperature of 770 K. The surface tensions of these liquid alloys were determined for the whole concentration range by using energetics determined from thermodynamic calculations. In all calculations, In{Sn manifested properties very close to alloys of ideal mixing, while Sb-Sn showed properties that are asymmetric about equiatomic composition. Our results suggest that a weak complex of the form SbSn2 could be present in the Sb-Sn alloy at a temperature of about 770 K.

  17. Reactions in Electrodeposited Cu/Sn and Cu/Ni/Sn Nanoscale Multilayers for Interconnects

    Directory of Open Access Journals (Sweden)

    Pay Ying Chia

    2016-05-01

    Full Text Available Miniaturization of electronic devices has led to the development of 3D IC packages which require ultra-small-scale interconnections. Such small interconnects can be completely converted into Cu-Sn based intermetallic compounds (IMCs after reflow. In an effort to improve IMC based interconnects, an attempt is made to add Ni to Cu-Sn-based IMCs. Multilayer interconnects consisting of stacks of Cu/Sn/Cu/Sn/Cu or Cu/Ni/Sn/Ni/Sn/Cu/Ni/Sn/Ni/Cu with Ni = 35 nm, 70 nm, and 150 nm were electrodeposited sequentially using copper pyrophosphate, tin methanesulfonic, and nickel Watts baths, respectively. These multilayer interconnects were investigated under room temperature aging conditions and for solid-liquid reactions, where the samples were subjected to 250 °C reflow for 60 s and also 300 °C for 3600 s. The progress of the reaction in the multilayers was monitored by using X-ray Diffraction, Scanning Electron Microscope, and Energy dispersive X-ray Spectroscopy. FIB-milled samples were also prepared for investigation under room temperature aging conditions. Results show that by inserting a 70 nanometres thick Ni layer between copper and tin, premature reaction between Cu and Sn at room temperature can be avoided. During short reflow, the addition of Ni suppresses formation of Cu3Sn IMC. With increasing Ni thickness, Cu consumption is decreased and Ni starts acting as a barrier layer. On the other hand, during long reflow, two types of IMC were found in the Cu/Ni/Sn samples which are the (Cu,Ni6Sn5 and (Cu,Ni3Sn, respectively. Details of the reaction sequence and mechanisms are discussed.

  18. Dissolution and Interfacial Reactions of (Cu,Ni)6Sn5 Intermetallic Compound in Molten Sn-Cu-Ni Solders

    Science.gov (United States)

    Wang, Chao-hong; Lai, Wei-han; Chen, Sinn-wen

    2014-01-01

    (Cu,Ni)6Sn5 is an important intermetallic compound (IMC) in lead-free Sn-Ag-Cu solder joints on Ni substrate. The formation, growth, and microstructural evolution of (Cu,Ni)6Sn5 are closely correlated with the concentrations of Cu and Ni in the solder. This study reports the interfacial behaviors of (Cu,Ni)6Sn5 IMC (Sn-31 at.%Cu-24 at.%Ni) with various Sn-Cu, Sn-Ni, and Sn-Cu-Ni solders at 250°C. The (Cu,Ni)6Sn5 substrate remained intact for Sn-0.7 wt.%Cu solder. When the Cu concentration was decreased to 0.3 wt.%, (Cu,Ni)6Sn5 significantly dissolved into the molten solder. Moreover, (Cu,Ni)6Sn5 dissolution and (Ni,Cu)3Sn4 formation occurred simultaneously for the Sn-0.1 wt.%Ni solder. In Sn-0.5 wt.%Cu-0.2 wt.%Ni solder, many tiny (Cu,Ni)6Sn5 particulates were formed and dispersed in the solder matrix, while in Sn-0.3 wt.%Cu-0.2 wt.%Ni a lot of (Ni,Cu)3Sn4 grains were produced. Based on the local equilibrium hypothesis, these results are further discussed based on the liquid-(Cu, Ni)6Sn5-(Ni,Cu)3Sn4 tie-triangle, and the liquid apex is suggested to be very close to Sn-0.4 wt.%Cu-0.2 wt.%Ni.

  19. In situ{sup 119}Sn Moessbauer spectroscopy study of Sn-based electrode materials

    Energy Technology Data Exchange (ETDEWEB)

    Aboulaich, Abdelmaula, E-mail: abdelmaula.aboulaich@univ-mont2.fr; Robert, Florent; Lippens, Pierre Emmanuel; Aldon, Laurent; Olivier-Fourcade, Josette [Universite Montpellier II, Laboratoire des Agregats Moleculaires et Materiaux Inorganiques (UMR 5072-CNRS) (France); Willmann, Patrick [Centre National d' Etudes Spatiales (France); Jumas, Jean-Claude [Universite Montpellier II, Laboratoire des Agregats Moleculaires et Materiaux Inorganiques (UMR 5072-CNRS) (France)

    2006-01-15

    Sn-based composite materials were synthetized by a conventional melt-quenching method, and studied by X-ray diffraction, electrochemistry and in situ{sup 119}Sn Moesssbauer spectroscopy. Tin was dispersed ex situ into a matrix formed from B{sub 2}O{sub 3}:P{sub 2}O{sub 5}. XRD and {sup 119}Sn Moessbauer spectroscopy show the formation of an interface between the active species (Sn{sup 0}) and the matrix. This amorphous interface acts as a 'buffer-zone' which compensates volume changes during the tin-lithium alloy formation and avoids aggregation of tin particles.

  20. Electrochemical properties of Ti-Ni-Sn materials predicted by 119Sn Mössbauer spectroscopy

    Science.gov (United States)

    Ladam, A.; Aldon, L.; Lippens, P.-E.; Olivier-Fourcade, J.; Jumas, J.-C.; Cenac-Morthe, C.

    2016-12-01

    The electrochemical activity of TiNiSn, TiNi 2Sn and Ti 6Sn 5 compounds considered as negative electrode materials for Li-ion batteries has been predicted from the isomer shift- Hume-Rothery electronic density correlation diagram. The ternary compounds were obtained from solid-state reactions and Ti 6Sn 5 by ball milling. The 119Sn Mössbauer parameters were experimentally determined and used to evaluate the Hume-Rothery electronic density [e av]. The values of [e av] are in the region of Li-rich Li-Sn alloys for Ti 6Sn 5 and outside this region for the ternary compounds, suggesting that the former compound is electrochemically active but not the two latter ones. Electrochemical tests were performed for these different materials confirming this prediction. The close values of [e av] for Ti 6Sn 5 and Li-rich Li-Sn alloys indicate that the observed good capacity retention could be related to small changes in the global structures during cycling.

  1. Aperiodic SiSn/Si multilayers for thermoelectric applications

    Science.gov (United States)

    Tonkikh, A. A.; Zakharov, N. D.; Eisenschmidt, C.; Leipner, H. S.; Werner, P.

    2014-04-01

    We report on novel defect-free SiSn/Si heterostructures grown pseudomorphically on Si(001) substrates using temperature-modulated molecular beam epitaxy. This approach results in a sustainable epitaxial growth for SiSn/Si multilayers. Transmission electron microscopy and electron diffraction manifest that SiSn layers possess a diamond lattice structure. X-ray diffraction reveals up to 9.5 at% Sn in the crystal lattice of SiSn layers.

  2. Anomalous creep in Sn-rich solder joints

    Energy Technology Data Exchange (ETDEWEB)

    Song, Ho Geon; Morris Jr., John W.; Hua, Fay

    2002-03-15

    This paper discusses the creep behavior of example Sn-rich solders that have become candidates for use in Pb-free solder joints. The specific solders discussed are Sn-3.5Ag, Sn-3Ag-0.5Cu, Sn-0.7Cu and Sn-10In-3.1Ag, used in thin joints between Cu and Ni-Au metallized pads.

  3. Prepared and Electromagnetic Properties of La Doped Strontium Ferrite/Polymer Composite%镧掺杂锶铁氧体/聚苯胺纳米复合材料的制备及电磁性能

    Institute of Scientific and Technical Information of China (English)

    翟青霞; 黄英

    2011-01-01

    To compare the electromagnetic properties of La-doped strontium ferrites nanocomposite in different form, strontium ferrites particle doped with La were synthesized by sol-gel, strontium ferrite/PANI nanocomposites were prepared by in situ polymerization method, La doped nano-strontium ferrite/PSS film and SrLa0.4Fe11.6O,9/PSS/PANI mult-layers film were prepared by electrostatic self-assembly technique. The structure, morphology and ferromagnetic property of ferrite particle and nanocomposites were characterized by X-ray powder diffractometer (XRD) , Fourier transform infrared spectra (FTIR) , Transmission electron microscope (TEM) , X-ray photoelectron spectrum ( XPS) , Magnetic vector network analyzer and vibrating sample magnetometer ( VSM ) . The results indicate that at 9.21GHz,the strength of microwave absorption properties of all is; ( SrLa0.4Fe11.6O19/PSS/PANI)g multi-layer film > SrLa0.4Fe11.6 O19/PANI particle > SrLa0.4Fe11.6O19 particle, (SrLa0 4Fen 6OI9/PSS/PANI)8 multi-layer film has higher saturation magnetization Mt and coercivity Hc as compared with the particle SrFe12O19 and SrFe12O19/ PANI composite materials. (SrLa0.4Fe11.6O19/PSS/PANI)g multi-layer film has fine electromagnetic performance.%为了比较不同形态的镧掺杂纳米锶铁氧体复合材料电磁性能的优劣,分别以溶胶-凝胶法制备了稀土镧掺杂纳米锶铁氧体( SrLa0.4Fe11.6O19)颗粒、原位复合技术制备了镧掺杂锶铁氧体/聚苯胺(SrLa0.4Fe11.6 O19/PANI)纳米复合颗粒,静电自组装法制备了镧掺杂锶铁氧体/聚苯乙烯磺酸钠( SrLa0.4Fe11.6O19/PSS)20、镧掺杂锶铁氧体/聚苯乙烯磺酸钠/聚苯胺( SrLa0.4Fe11.6 O19/PSS/PANI)8纳米复合多层膜.用XRD,FTIR,FETEM,XPS,矢量网络分析,VSM研究了镧掺杂锶铁氧体/聚苯胺纳米复合材料结构和性能.结果表明:在9.21GHz附近,材料的损耗角正切大小排序为:( SrLa0.4Fe11.6 O19/PSS/PANI)8复合多层膜>SrLa0.4 Fe11.6O19/PANI复合颗粒>SrLa0

  4. Sn-inserted Al-induced layer exchange for large-grained GeSn thin films on insulator

    OpenAIRE

    Toko, Kaoru; Oya, Naoki; Nakata, Mitsuki; Suemasu, Takashi

    2016-01-01

    Large-grained polycrystalline GeSn layers on glass are achieved through the layer exchange between a-Ge and Sn-doped Al layers. The thicker Sn layers, inserted below Al layers, provided the faster growth velocity, resulting in the smaller grain size of the GeSn layer. Controlling the Sn thickness (10 nm) and the growth temperature (300 °C) allowed for approximately 80% (111)-oriented GeSn layer with grains having an average size of 40 μm. The lower growth temperature led to the higher Sn cont...

  5. Ag3Sn plate formation in the solidification of near-ternary eutectic Sn-Ag-Cu

    Science.gov (United States)

    Kang, Sung K.; Shih, Da-Yuan; Donald, Ny.; Henderson, W.; Gosselin, Timothy; Sarkhel, Amit; Charles Goldsmith, Ny.; Puttlitz, Karl J.; Choi, Won Kyoung

    2003-06-01

    Near-ternary eutectic Sn-Ag-Cu alloys are leading lead-free candidate solders for various applications. These alloys yield three phases upon solidification: β-Sn,Ag3Sn, and Cu6Sn5. Large, plate-like, pro-eutectic Ag3Sn structures can grow rapidly within the liquid phase, potentially adversely affecting the mechanical behavior and reducing the fatigue life of solder joints. This article reports on the formation of such plates in Sn-Ag-Cu solder balls and joints and demonstrates how large Ag3Sn plate formation can be minimized.

  6. On Mossbauer dynamics in Nb3Sn

    Indian Academy of Sciences (India)

    Ashok Razdan

    2000-06-01

    We compare the anharmonic Lamb Mossbauer factor and the -Lamb Mossbauer factor by studying the anharmonicity observed in the -factor data of Nb3Sn. We also show that this anharmonicity does not arise due to the presence of potential.

  7. The system SnSe-Bi

    Energy Technology Data Exchange (ETDEWEB)

    Alidzhanov, M.A.; Alizade, M.Z.; Aslanov, G.A.; Gurshumov, A.P.; Persakhova, A.Y.

    1986-10-01

    The authors study the system SnSe-Bi on annealed samples by methods of physicochemical analysis; x-ray phase, differential-thermal analysis, microstructural analysis, and measurements of the microhardness. It was established that the eutectic contains five mole % SnSe and melts at 260 C. A bounded region of the SnSe-based solid solutions exist, and the solubility of SnSe in bismuth was not observed. Anomalies in the temperature dependences of the thermo-emf and electrical conductivity of the solid solutions were determined by the phase transformations of tin monoselenide. The nature of the changes in the thermo-emf and the electrical conductivity as a function of the temperature is associated with the changes in the density and effective mass of the charge carriers.

  8. Theoretical study of projectile fragmentation in the reactions $^{112}$Sn + $^{112}$Sn and $^{124}$Sn + $^{124}$Sn at 1 GeV/nucleon

    CERN Document Server

    Imal, H; Buyukcizmeci, N; Ogul, R; Botvina, A S; Trautmann, W

    2014-01-01

    We analyze the production cross sections and isotopic distributions of projectile-like residues in the reactions $^{112}$Sn + $^{112}$Sn and $^{124}$Sn + $^{124}$Sn at an incident beam energy of 1 GeV/nucleon measured with the FRS fragment separator at the GSI laboratory. Calculations within the statistical multifragmentation model (SMM) for an ensemble of excited sources were performed with ensemble parameters determined previously for similar reactions at 600 MeV/nucleon. The obtained good agreement with the experiment establishes the universal properties of the excited spectator systems produced during the dynamical stage of the reaction. It is furthermore confirmed that a significant reduction of the symmetry-energy term at the freeze-out stage of reduced density and high temperature is necessary to reproduce the experimental isotope distributions. A trend of decreasing symmetry energy for large neutron-rich fragments of low excitation energy is interpreted as a nuclear-structure effect.

  9. MCNP6 Study of Fragmentation Products from 112Sn + 112Sn and 124Sn + 124Sn at 1 GeV/nucleon

    CERN Document Server

    Mashnik, Stepan G

    2013-01-01

    Isotope production cross sections from 112Sn + 112Sn and 124Sn + 124Sn reactions at 1 GeV/nucleon, which were measured recently at GSI using the heavy-ion accelerator SIS18 and the Fragment Separator (FRS), have been analyzed with the latest Los Alamos Monte-Carlo transport code MCNP6 using the LAQGSM03.03 event generator. MCNP6 reproduces reasonably well all the measured cross sections. Comparison of the MCNP6 results with the measured data and with calculations by a modification of the Los Alamos version of the Quark-Gluon String Model allowing for multifragmentation processes in the framework of the Statistical Multifragmentation Model (SMM) by Botvina and coauthors, as realized in the code LAQGSM03.S1, does not suggest unambiguous evidence of a multifragmentation signature.

  10. SN 1054: A pulsar-powered supernova?

    Science.gov (United States)

    Li, Shao-Ze; Yu, Yun-Wei; Huang, Yan

    2015-11-01

    The famous ancient supernova SN 1054 could have been too bright to be explained in the “standard” radioactive-powered supernova scenario. As an alternative attempt, we demonstrate that the spin-down of the newly born Crab pulsar could provide a sufficient energy supply to make SN 1054 visible at daytime for 23 days and at night for 653 days, where a one-zone semi-analytical model is employed. Our results indicate that SN 1054 could be a “normal” cousin of magnetar-powered superluminous supernovae. Therefore, SN 1054-like supernovae could be a probe to uncover the properties of newly born neutron stars, which provide initial conditions for studies on neutron star evolutions.

  11. Optical Characterization of Si-Based Ge1- x Sn x Alloys with Sn Compositions up to 12%

    Science.gov (United States)

    Al-Kabi, Sattar; Ghetmiri, Seyed Amir; Margetis, Joe; Du, Wei; Mosleh, Aboozar; Alher, Murtadha; Dou, Wei; Grant, Joshua M.; Sun, Greg; Soref, Richard A.; Tolle, John; Li, Baohua; Mortazavi, Mansour; Naseem, Hameed A.; Yu, Shui-Qing

    2016-04-01

    Optical properties of germanium tin (Ge1- x Sn x ) alloys have been comprehensively studied with Sn compositions from 0 (Ge) to 12%. Raman spectra of the GeSn samples with various Sn compositions were measured. The room temperature photoluminescence (PL) spectra show a gradual shift of emission peaks towards longer wavelength as Sn composition increases. Temperature dependent PL shows the PL intensity variation along with the temperature change, which reveals the indirectness or directness of the bandgap of the material. As temperature decreases, the PL intensity decreases with Sn composition less than 8%, indicating the indirect bandgap Ge1- x Sn x ; while the PL intensity increases with Sn composition higher than 10%, implying the direct bandgap Ge1- x Sn x . Moreover, the PL study of n-doped samples shows bandgap narrowing compared to the unintentionally (Boron) doped thin film with similar Sn compositions due to the doping.

  12. Advances in $Nb_{3}Sn$ performance

    CERN Document Server

    Godeke, A

    2009-01-01

    Nb3Sn wires with non-Cu critical current densities (Jc) that surpass 3 kAmm−2 at 12 T and 4.2 K are commercially available in piece lengths longer than 10 km. Acceleratortype magnets that utilize these conductors have achieved record magnetic fields. This article summarizes key developments in the last decade that have led to these significant improvements in the performance of Nb3Sn wires.

  13. Advances in Nb3Sn Performance

    Energy Technology Data Exchange (ETDEWEB)

    Godeke, Arno

    2008-05-19

    Nb{sub 3}Sn wires with non-Cu critical current densities (J{sub c}) that surpass 3 kAmm{sup -2} at 12 T and 4.2 K are commercially available in piece lengths longer than 10 km. Accelerator-type magnets that utilize these conductors have achieved record magnetic fields. This article summarizes key developments in the last decade that have led to these significant improvements in the performance of Nb{sub 3}Sn wires.

  14. Explosion Calculations of SN1087

    Science.gov (United States)

    Wooden, Diane H.; Morrison, David (Technical Monitor)

    1994-01-01

    Explosion calculations of SNT1987A generate pictures of Rayleigh-Taylor fingers of radioactive Ni-56 which are boosted to velocities of several thousand km/s. From the KAO observations of the mid-IR iron lines, a picture of the iron in the ejecta emerges which is consistent with the "frothy iron fingers" having expanded to fill about 50% of the metal-rich volume of the ejecta. The ratio of the nickel line intensities yields a high ionization fraction of greater than or equal to 0.9 in the volume associated with the iron-group elements at day 415, before dust condenses in the ejecta. From the KAO observations of the dust's thermal emission, it is deduced that when the grains condense their infrared radiation is trapped, their apparent opacity is gray, and they have a surface area filling factor of about 50%. The dust emission from SN1987A is featureless: no 9.7 micrometer silicate feature, nor PAH features, nor dust emission features of any kind are seen at any time. The total dust opacity increases with time even though the surface area filling factor and the dust/gas ratio remain constant. This suggests that the dust forms along coherent structures which can maintain their radial line-of-sight opacities, i.e., along fat fingers. The coincidence of the filling factor of the dust and the filling factor of the iron strongly suggests that the dust condenses within the iron, and therefore the dust is iron-rich. It only takes approximately 4 x 10(exp -4) solar mass of dust for the ejecta to be optically thick out to approximately 100 micrometers; a lower limit of 4 x 10(exp -4) solar mass of condensed grains exists in the metal-rich volume, but much more dust could be present. The episode of dust formation started at about 530 days and proceeded rapidly, so that by 600 days 45% of the bolometric luminosity was being emitted in the IR; by 775 days, 86% of the bolometric luminosity was being reradiated by the dust. Measurements of the bolometric luminosity of SN1987A from

  15. The Nature of SN 1961V

    CERN Document Server

    Chu, Y H; Stockdale, C J; Rupen, M P; Cowan, J J; Teare, S W; Chu, You-Hua; Gruendl, Robert A.; Stockdale, Christopher J.; Rupen, Michael P.; Cowan, John J.; Teare, Scott W.

    2004-01-01

    The nature of SN 1961V has been uncertain. Its peculiar optical light curve and slow expansion velocity are similar to those of super-outbursts of luminous blue variables (LBVs), but its nonthermal radio spectral index and declining radio luminosity are consistent with decades-old supernovae (SNe). We have obtained Hubble Space Telescope STIS images and spectra of the stars in the vicinity of SN 1961V, and find Object 7 identified by Filippenko et al. to be the closest to the optical and radio positions of SN 1961V. Object 7 is the only point source detected in our STIS spectra and only its H-alpha emission is detected; it cannot be the SN or its remnant because of the absence of forbidden lines. While the H-alpha line profile of Object 7 is remarkably similar to that of eta Car, the blue color (similar to an A2Ib supergiant) and lack of appreciable variability are unlike known post-outburst LBVs. We have also obtained Very Long Baseline Array (VLBA) observations of SN 1961V at 18 cm. The non-detection of SN ...

  16. SN 2009kn - The Twin of the Type IIn SN 1994W

    CERN Document Server

    Kankare, E; Bufano, F; Spyromilio, J; Mattila, S; Chugai, N N; Lundqvist, P; Pastorello, A; Kotak, R; Benetti, S; Botticella, M-T; Cumming, R J; Fransson, C; Fraser, M; Leloudas, G; Miluzio, M; Sollerman, J; Stritzinger, M; Turatto, M; Valenti, S

    2012-01-01

    We present an optical and near-infrared photometric and spectroscopic study of supernova (SN) 2009kn spanning ~1.5 yr from the discovery. The optical spectra are dominated by the narrow (FWHM ~1000 km s^-1) Balmer lines distinctive of a Type IIn SN with P-Cygni profiles. Contrarily the photometric evolution resembles more that of a Type IIP SN with a large drop in luminosity at the end of the plateau phase. These characteristics are similar to those of SN 1994W, whose nature has been explained with two different models with different approaches. The well-sampled dataset on SN 2009kn offers the possibility to test these models, both in the case of SN 2009kn and SN 1994W. We associate the narrow P-Cygni lines with a swept-up shell composed of circumstellar matter and SN ejecta. The broad emission line wings, seen during the plateau phase arise from internal electron scattering in this shell. The slope of the light curve after the post-plateau drop is fairly consistent with that expected from the radioactive dec...

  17. Effect of Sn:Zn Ratio on Corrosion Behavior of Mg-aSn-bZn Extrusions

    Science.gov (United States)

    Yim, Chang Dong; Woo, Sang Kyu; You, Bong Sun

    The effect of Sn:Zn ratio on corrosion behavior of magnesium alloys containing Sn and Zn was evaluated systematically by potentiodynamic polarization and immersion tests. The hydrogen evolution rate during cathodic polarization and the average corrosion rate measured by immersion test increased with increasing Sn content and Sn:Zn ratio. The changes of fraction of second phase with more positive corrosion potential and solute contents in the matrix phase were responsible for the change of corrosion behavior according to Sn content and Sn:Zn ratio. Mg2Sn particle accelerated the corrosion by formation of micro-galvanic cell, which resulted in faster corrosion rates of Mg-5Sn-xZn alloys than those of Mg-2Sn-xZn alloys. The increase of Zn in the matrix was harmful to the corrosion resistance because Zn accelerated the hydrogen evolution although ZnO was beneficial to the passivity of surface film.

  18. Creep performance of Zr-1Nb-0.75Sn-0.1Fe cladding tubes with optimized Sn content

    Science.gov (United States)

    Kim, Won Nyeon; Choi, Yong; Hong, Sun Ig

    2014-12-01

    Creep properties of stress-relieved Zr-1Nb-0.75Sn-0.1Fe alloy with a lower Sn content were studied. Zr-1Nb-0.75Sn-0.1Fe alloy was found to have stress exponents of 6-7, independent of stress level, unlike Zr-1Nb-1Sn-0.1Fe alloy, in which the transition of stress exponent with increase of stress was observed. The constancy of stress exponent, without the transition observed in Zr-1Nb-0.75Sn-0.1Fe alloy with lower Sn content, is associated with the decrease of Sn atoms. The activation energies for creep deformation were calculated to be between 210 and 260 kJ/mol for the Zr-1Nb-0.75Sn-0.1Fe alloy with a lower Sn content. The slightly smaller creep activation energy in Zr-1Nb-0.75Sn-0.1Fe, compared with that of Zr-1Nb-1Sn-0.1Fe alloy, is thought to be attributed to the lower Sn content. The creep data obtained at different temperatures and stress fell close to a single line, suggesting the creep life of Zr-1Nb-0.75Sn-0.1Fe alloy with a lower Sn content is well expressed by the Larson-Miller Parameter.

  19. Chemistry, growth kinetics, and epitaxial stabilization of Sn2+ in Sn-doped SrTiO3 using (CH36Sn2 tin precursor

    Directory of Open Access Journals (Sweden)

    Tianqi Wang

    2016-12-01

    Full Text Available PbTiO3-based ferroelectrics have impressive electroactive properties, originating from the Pb2+ 6s2 electron lone-pair, which cause large elastic distortion and electric polarization due to cooperative pseudo Jahn-Teller effect. Recently, tin-based perovskite oxide (SnTiO3 containing Sn2+ and a chemistry similar to that of the 6s2 lone-pair has been identified as a thermally stable, environmentally friendly substitute for PbTiO3-based ferroelectrics. However experimental attempts to stabilize Sn2+ on the A-site of perovskite ATiO3 have so far failed. In this work, we report on the growth of atomically smooth, epitaxial, and coherent Sn-alloyed SrTiO3 films on SrTiO3 (001 substrates using a hybrid molecular beam epitaxy approach. With increasing Sn concentration, the out-of-plane lattice parameter first increases in accordance with the Vegard’s law and then decreases for Sn(Sr+Ti+Sn at. % ratio > 0.1 due to the incorporation of Sn2+ at the A-site. Using a combination of high-resolution X-ray photoelectron spectroscopy and density functional calculations, we show that while majority of Sn is on the B-site, there is a quantitatively unknown fraction of Sn being consistent with the A-site occupancy making SrTiO3 polar. A relaxor-like ferroelectric local distortion with monoclinic symmetry, induced by A-site Sn2+, was observed in Sn-doped SrTiO3 with Sn(Sr+Ti+Sn at. % ratio = 0.1 using optical second harmonic generation measurements. The role of growth kinetics on the stability of Sn2+ in SrTiO3 is discussed.

  20. Chemistry, growth kinetics, and epitaxial stabilization of Sn2+ in Sn-doped SrTiO3 using (CH3)6Sn2 tin precursor

    Science.gov (United States)

    Wang, Tianqi; Pitike, Krishna Chaitanya; Yuan, Yakun; Nakhmanson, Serge M.; Gopalan, Venkatraman; Jalan, Bharat

    2016-12-01

    PbTiO3-based ferroelectrics have impressive electroactive properties, originating from the Pb2+ 6s2 electron lone-pair, which cause large elastic distortion and electric polarization due to cooperative pseudo Jahn-Teller effect. Recently, tin-based perovskite oxide (SnTiO3) containing Sn2+ and a chemistry similar to that of the 6s2 lone-pair has been identified as a thermally stable, environmentally friendly substitute for PbTiO3-based ferroelectrics. However experimental attempts to stabilize Sn2+ on the A-site of perovskite ATiO3 have so far failed. In this work, we report on the growth of atomically smooth, epitaxial, and coherent Sn-alloyed SrTiO3 films on SrTiO3 (001) substrates using a hybrid molecular beam epitaxy approach. With increasing Sn concentration, the out-of-plane lattice parameter first increases in accordance with the Vegard's law and then decreases for Sn(Sr+Ti+Sn/) at. % ratio > 0.1 due to the incorporation of Sn2+ at the A-site. Using a combination of high-resolution X-ray photoelectron spectroscopy and density functional calculations, we show that while majority of Sn is on the B-site, there is a quantitatively unknown fraction of Sn being consistent with the A-site occupancy making SrTiO3 polar. A relaxor-like ferroelectric local distortion with monoclinic symmetry, induced by A-site Sn2+, was observed in Sn-doped SrTiO3 with Sn(Sr+Ti+Sn/) at. % ratio = 0.1 using optical second harmonic generation measurements. The role of growth kinetics on the stability of Sn2+ in SrTiO3 is discussed.

  1. GRB 080319b and SN1054 .

    Science.gov (United States)

    Martocchia, A.; Polcaro, V. F.

    A typical SN Type IIp model can fit the SN1054 explosion light curve when data coming from European sources are also considered. Though a detailed study of these texts reveals a number of problems in their precise datation, it is likely that they actually describe the observation of an unusual celestial event which occurred in a day near to the one of Pope Leo IX's death (19 April, 1054). In particular, they seem to show that a very bright transient celestial phenomenon, lasting about 30 min, was observed. We already suggested that this Medieval testimonies were due to a very short and bright light flash in the first phase of the SN precursor collapse. The discovery of a similar flash in GRB 080319b brought us to consider this hypothesis more deeply. We thus scaled the intensity of the GRB 080319b to a distance of 1.83 kpc, in order to evaluate the intensity of a similar flash in the SN1054. We then took this value as input of the atmospheric optical effects simulation code \\textit{HaloSim3}, using the point-like source option for the dates and sites reported in European texts connected with the SN1054 event, and in various atmospheric conditions. The results are remarkably similar to the effects reported in Medieval chronicles.

  2. Study of a SiGeSn/GeSn/SiGeSn structure toward direct bandgap type-I quantum well for all group-IV optoelectronics.

    Science.gov (United States)

    Ghetmiri, Seyed Amir; Zhou, Yiyin; Margetis, Joe; Al-Kabi, Sattar; Dou, Wei; Mosleh, Aboozar; Du, Wei; Kuchuk, Andrian; Liu, Jifeng; Sun, Greg; Soref, Richard A; Tolle, John; Naseem, Hameed A; Li, Baohua; Mortazavi, Mansour; Yu, Shui-Qing

    2017-02-01

    A SiGeSn/GeSn/SiGeSn single quantum well structure was grown using an industry standard chemical vapor deposition reactor with low-cost commercially available precursors. The material characterization revealed the precisely controlled material growth process. Temperature-dependent photoluminescence spectra were correlated with band structure calculation for a structure accurately determined by high-resolution x-ray diffraction and transmission electron microscopy. Based on the result, a systematic study of SiGeSn and GeSn bandgap energy separation and barrier heights versus material compositions and strain was conducted, leading to a practical design of a type-I direct bandgap quantum well.

  3. Experimental Investigation of the Ti-Nb-Sn Isothermal Section at 1173 K

    Directory of Open Access Journals (Sweden)

    Jianli Wang

    2016-03-01

    Full Text Available Isothermal section of Ti-Nb-Sn at 1173 K was experimentally studied by back-scattered electron, electron probe microanalysis and X-ray diffraction analysis. Solid solution phase β(Ti, Nb, liquid Sn and eight intermetallic compounds Ti3Sn, Ti2Sn, Ti5Sn3, Ti6Sn5, Nb6Sn5, Nb3Sn, Ti3Nb2Sn2 and Ti3NbSn coexisted. Four ternary phase regions Ti3Sn + Ti3NbSn + β(Ti, Nb, Ti3NbSn + Ti3Nb3Sn2 + Ti3Sn, Ti2Sn + Ti3Sn + Ti3Nb3Sn2 and Ti6Sn5 + Ti3Nb3Sn2 + Nb3Sn were experimented. In addition, the proper composition range of the single phase was suggested. All the detected Ti-Sn and Nb-Sn compounds have a remarkable solubility along the isoconcentration of Sn. β(Ti, Nb has a relatively large solution while liquid Sn has a little in the isothermal section.

  4. Raman spectral shift versus strain and composition in GeSn layers with: 6 to 15% Sn contents

    OpenAIRE

    Gassenq, A.; Milord, L.; Aubin, J.; Pauc, N.; Guilloy, K.; Rothman, J.; Rouchon, D.; Chelnokov, A.; Hartmann, J.M.; Reboud, V.; Calvo, V.

    2017-01-01

    GeSn alloys are the subject of intense research activities as these group IV semiconductors present direct bandgap behaviors for high Sn contents. Today, the control of strain becomes an important challenge to improve GeSn devices. Strain micro-measurements are usually performed by Raman spectroscopy. However, different relationships linking the Raman spectral shifts to the built-in strain can be found in the literature. They were deduced from studies on low Sn content GeSn layers (i.e. xSn

  5. Ultraviolet emission from low resistance Cu2SnS3/SnO2 and CuInS2/Sn:In2O3 nanowires

    Directory of Open Access Journals (Sweden)

    E. Karageorgou

    2014-11-01

    Full Text Available SnO2 and Sn:In2O3 nanowires were grown on Si(001, and p-n junctions were fabricated in contact with p-type Cu2S which exhibited rectifying current–voltage characteristics. Core-shell Cu2SnS3/SnO2 and CuInS2/Sn:In2O3 nanowires were obtained by depositing copper and post-growth processing under H2S between 100 and 500 °C. These consist mainly of tetragonal rutile SnO2 and cubic bixbyite In2O3. We observe photoluminescence at 3.65 eV corresponding to band edge emission from SnO2 quantum dots in the Cu2SnS3/SnO2 nanowires due to electrostatic confinement. The Cu2SnS3/SnO2 nanowires assemblies had resistances of 100 Ω similar to CuInS2/In2O3 nanowires which exhibited photoluminescence at 3.0 eV.

  6. Interplay between relaxation and Sn segregation during thermal annealing of GeSn strained layers

    Science.gov (United States)

    Comrie, C. M.; Mtshali, C. B.; Sechogela, P. T.; Santos, N. M.; van Stiphout, K.; Loo, R.; Vandervorst, W.; Vantomme, A.

    2016-10-01

    The effect of thermal annealing on epitaxial GeSn (6.5% Sn) strained layers grown on Ge-buffered Si(100) wafers has been investigated using Rutherford backscattering spectrometry and X-ray diffraction to unambiguously determine the Sn substitutional content as well as the elastic strain in the layers. Vacuum annealing at temperatures below 400 °C for 20 min has no noticeable effect on the strain in the epitaxial layers. Once the temperature was raised above 400 °C, however, relaxation of the layer sets in and the GeSn layer has essentially completely relaxed following a 20 min anneal at 650 °C. Using Rutherford backscattering and channelling spectrometry to provide compositional information as a function of depth enables one to monitor the effect of the thermal anneal on the Sn distribution throughout the layer, and also to directly extract their substitutional fraction (i.e., their solubility in the lattice). The results obtained show that when the relaxation initially sets in both the Ge and the Sn remain firmly bound in substitutional lattice sites and it is only around 600 °C, and after substantial relaxation has taken place, that Sn is finally expelled from lattice sites and diffuses to the surface of the sample.

  7. Primary solidification phases of the Sn-rich Sn-Ag-Cu-Ni quaternary system

    Science.gov (United States)

    Chang, Cheng-An; Chen, Sinn-Wen; Chiu, Chen-Nan; Huang, Yu-Chih

    2005-08-01

    The eutectic and near-eutectic Sn-Ag-Cu solders are the most promising lead-free solders, and nickel is frequently used as the barrier layer material. Nickel dissolves into the molten Sn-Ag-Ni alloy during the soldering process, and the ternary solder becomes a Sn-Ag-Cu-Ni quaternary melt near the nickel substrate. Liquidus projection is the projection of the liquidus trough and it delineates the boundaries of various primary solidification phases. Information of liquidus projection is helpful for understanding the alloys’ solidification behavior. This study prepared the Sn-Ag-Cu-Ni alloys of various compositions at the Sn-rich corner. The alloys were melted at higher temperatures and solidified in air. The solidified alloys were metallographically examined to determine the phases formed, especially the primary solidification phases. No ternary or quaternary compounds were found. The knowledge of the primary solidification phases, phase formation sequences, and reaction temperatures determined in this study were put together with all of the available liquidus projections of the constituent ternary systems to determine the primary solidification phases of the quaternary Sn-Ag-Cu-Ni system at the Sn-rich corner.

  8. SN Refsdal: Classification as a Luminous and Blue SN 1987A-like Type II Supernova

    CERN Document Server

    Kelly, P L; Selsing, J; Foley, R J; Hjorth, J; Rodney, S A; Christensen, L; Strolger, L -G; Filippenko, A V; Treu, T; Steidel, C C; Strom, A; Riess, A G; Zitrin, A; Schmidt, K B; Bradac, M; Jha, S W; Graham, M L; McCully, C; Graur, O; Weiner, B J; Silverman, J M

    2015-01-01

    We have acquired Hubble Space Telescope (HST) and Very Large Telescope near-infrared spectra and images of supernova (SN) Refsdal after its discovery as an Einstein cross in Fall 2014. The HST light curve of SN Refsdal matches the distinctive, slowly rising light curves of SN 1987A-like supernovae (SNe), and we find strong evidence for a broad H-alpha P-Cygni profile in the HST grism spectrum at the redshift (z = 1.49) of the spiral host galaxy. SNe IIn, powered by circumstellar interaction, could provide a good match to the light curve of SN Refsdal, but the spectrum of a SN IIn would not show broad and strong H-alpha absorption. From the grism spectrum, we measure an H-alpha expansion velocity consistent with those of SN 1987A-like SNe at a similar phase. The luminosity, evolution, and Gaussian profile of the H-alpha emission of the WFC3 and X-shooter spectra, separated by ~2.5 months in the rest frame, provide additional evidence that supports the SN 1987A-like classification. In comparison with other exam...

  9. The Supernova Impostor SN 2010da

    Science.gov (United States)

    Binder, Breanna A.; Williams, Benjamin F.; Kong, Albert K. H.; Plucinsky, Paul P.; Gaetz, Terrance J.; Skillman, Evan D.; Dolphin, Andrew E.

    2016-01-01

    Supernova impostors are optical transients that, despite being assigned a supernova designation, do not signal the death of a massive star or accreting white dwarf. Instead, many impostors are thought to be major eruptions from luminous blue variables. Although the physical cause of these eruptions is still debated, tidal interactions from a binary companion has recently gained traction as a possible explanation for observations of some supernova impostors. In this talk, I will discuss the particularly interesting impostor SN 2010da, which exhibits high-luminosity, variable X-ray emission. The X-ray emission is consistent with accretion onto a neutron star, making SN 2010da a likely high mass X-ray binary in addition to a supernova impostor. SN 2010da is a unique laboratory for understanding both binary interactions as drivers of massive star eruptions and the evolutionary processes that create high mass X-ray binaries.

  10. 镧掺杂铕发光材料的合成、结构及光学性能%Synthesis, Structure and Spectroscopic Properties of La-doped Europium Luminescent Materials

    Institute of Scientific and Technical Information of China (English)

    张勇; 廖莉玲; 杜莹; 刘玉波; 李存雄

    2013-01-01

    Five new La-doped europium complexes with 2-hydroxy-6-methylnicotinic acid(HA) and 1,10-phenanthroline(phen) as ligand were synthesized and characterized by elemental analysis,FT-IR spectra and fluorometric analysis.The results show that the composition of the complexes was confirmed to be (EuxLay)A3phen· 3H2O (x∶y=0.10∶0.90,0.30∶0.70,0.50∶0.50,0.70∶0.30,0.90∶0.10),and carboxyl of the ligand chelated with rare earth ions in chelating bidentate form.Lanthanum had an accumulative effect on europium complexes,which rose with the increase of lanthanum ions concentration.The measured fluorescence lifetime of five complexes were very similar and around 1 ms.%以2-羟基-6-甲基尼古丁酸(HA)、1,10-菲咯啉(phen)为配体,合成了五种新型镧掺杂铕的四元异核配合物,并对其进行元素分析、红外光谱测试以及荧光分析.结果表明:配合物的组成为(EuxLay)A3phen·3H2O(x∶y=0.10∶0.90,0.30∶0.70,0.50∶0.50,0.70∶0.30,0.90∶0.10),配体的羧基与稀土离子以螯合双齿配位;镧对铕的配合物有荧光浓聚效应,且随镧离子浓度的增加而加强;五种配合物的荧光寿命比较接近,均在1 ms左右.

  11. The Continuing Fall of SN 1987A

    Science.gov (United States)

    Dwek, Eli; Arendt, Richard; Bouchet, Patrice; Danziger, John; Frank, Kari; Gehrz, Robert; Park, Sangwook; Woodward, Charles

    2016-08-01

    We propose to use a total of 0.8 hr to obtain 3.6 and 4.5 micron photometry of SNR 1987A at four final epochs between 10900 and 11500 days after the explosion. SN 1987A has been monitored at approximately 6 month intervals throughout the Spitzer mission. The latest IRAC data clearly show that at 3.6 and 4.5 micron, the SN emission has peaked and is now in decline. Continued observation of SN 1987A will allow us to track the decline as the blast wave moves completely past the equatorial ring (ER). The rate at which new dust is swept up should be dropping to zero, and as the presently swept up dust is gradually destroyed (or cools) the emission should continue to fade. The dust traced at these wavelengths is thought to be collisionally-heated by the SN blast wave that also gives rise to the soft X-ray emission from the ER. Early in the mission, the intensity of the mid-IR emission (24 micron) was generally well correlated with that of the X-ray emission. However, the 3.6 and 4.5 micron emission are no longer tracking the brightness of the soft X-ray emission. These differences could stem from a variety of causes, including the sputtering of the dust or changes in the morphology of the ER. Ongoing X-ray observations of the remnant are taking place. Supplementing these with IR observations is essential for determining the spatial distribution, nature, and evolution of this hot dust component. Additionally, the observations may still reveal the appearance of a new emission component from the SN ejecta which is currently interacting with the reverse shock. These observations will complete the record of Spitzer's observations of SN 1987A, spanning more than 15 years from launch to end of mission.

  12. Origin of the SN2 benzylic effect.

    Science.gov (United States)

    Galabov, Boris; Nikolova, Valia; Wilke, Jeremiah J; Schaefer, Henry F; Allen, Wesley D

    2008-07-30

    The S N2 identity exchange reactions of the fluoride ion with benzyl fluoride and 10 para-substituted derivatives (RC6H 4CH 2F, R = CH3, OH, OCH 3, NH2, F, Cl, CCH, CN, COF, and NO2) have been investigated by both rigorous ab initio methods and carefully calibrated density functional theory. Groundbreaking focal-point computations were executed for the C6H5CH 2F + F (-) and C 6H 5CH2Cl + Cl (-) SN2 reactions at the highest possible levels of electronic structure theory, employing complete basis set (CBS) extrapolations of aug-cc-pV XZ (X = 2-5) Hartree-Fock and MP2 energies, and including higher-order electron correlation via CCSD/aug-cc-pVQZ and CCSD(T)/aug-cc-pVTZ coupled cluster wave functions. Strong linear dependences are found between the computed electrostatic potential at the reaction-center carbon atom and the effective SN2 activation energies within the series of para-substituted benzyl fluorides. An activation strain energy decomposition indicates that the SN2 reactivity of these benzylic compounds is governed by the intrinsic electrostatic interaction between the reacting fragments. The delocalization of nucleophilic charge into the aromatic ring in the SN2 transition states is quite limited and should not be considered the origin of benzylic acceleration of SN2 reactions. Our rigorous focal-point computations validate the benzylic effect by establishing SN2 barriers for (F (-), Cl (-)) identity exchange in (C6H5CH2F, C6H 5CH2Cl) that are lower than those of (CH3F, CH3Cl) by (3.8, 1.6) kcal mol (-1), in order.

  13. Microstructure evolution of directionally solidified Sn-16%Sb hyperperitectic alloy

    Institute of Scientific and Technical Information of China (English)

    Hu Xiaowu; Li Shuangming; Liu Lin; Fu Hengzhi

    2008-01-01

    The directionally solidified microstructure of Sn-16%Sb hyperperitectic alloy has been investigated at various solidification rates using a high-thermal gradient directional solidification apparatus. The results indicate that the solidification microstructure consists of hard primary intermetallic SnSb phase embedded in a matrix of soft peritectic β-Sn phase. The primary SnSb phase exhibits faceted growth with tetragonal or trigonal shapes. At the same time, the primary SnSb phase is refined with an increase in the solidification rate and dispersed more uniformly in the matrix of β-Sn phase. The volume fraction of the SnSb phase firstly decreases and then increases when the solidification rate increases in directional solidification of Sn-16%Sb hyperperitectic alloy.

  14. Electronic Structure, Oxidation State of Sn, and Chemical Stability of Photovoltaic Perovskite Variant Cs2SnI6

    CERN Document Server

    Xiao, Zewen; Zhang, Xiao; Zhou, Yuanyuan; Hosono, Hideo; Kamiya, Toshio

    2015-01-01

    Cs2SnI6, a variant of perovskite CsSnI3, is expected for a photovoltaic material. Based on a simple ionic model, it is expected that Cs2SnI6 is composed of Cs+, I-, and Sn4+ ions and that the band gap is primarily made of occupied I- 5p6 valence band maximum (VBM) and unoccupied Sn4+ 5s conduction band minimum (CBM) similar to SnO2. In this work, we performed density functional theory (DFT) calculations and revealed that the real charge state of the Sn ion in this compound is +2 similar to CsSnI3. This is due to strong covalent nature between the I ion and the Sn ion, the VBM consists of I 5p - I 5p antibonding states, and the CBM of I 5p - Sn 5s antibonding states. The +2 oxidation state of Sn is realized by the apparent charge state of I-2/3, because the I 5p - Sn 5s antibonding states form the unoccupied CBM and apparently 1/18 of the I 5p orbitals are unoccupied. These results are further supported by comparing chemical bonding analyses with those of related compounds. The chemical stability of the Cs2SnI...

  15. Aluminum-stabilized NB3SN superconductor

    Science.gov (United States)

    Scanlan, Ronald M.

    1988-01-01

    An aluminum-stabilized Nb.sub.3 Sn superconductor and process for producing same, utilizing ultrapure aluminum. Ductile components are co-drawn with aluminum to produce a conductor suitable for winding magnets. After winding, the conductor is heated to convert it to the brittle Nb.sub.3 Sn superconductor phase, using a temperature high enough to perform the transformation but still below the melting point of the aluminum. This results in reaction of substantially all of the niobium, while providing stabilization and react-in-place features which are beneficial in the fabrication of magnets utilizing superconducting materials.

  16. SN 1987A - a linear polarimetric study

    Energy Technology Data Exchange (ETDEWEB)

    Mendez, M.; Clocchiatti, A.; Benvenuto, O.G.; Feinstein, C.; Marraco, H.G.

    1988-11-01

    Multicolor linear polarimetric observations of SN 1987A have been obtained between February 28 and April 29, 1987. The intrinsic polarization was shown to decrease at a constant position angle of 27 deg during the first month after the explosion, and 30 days after the explosion the polarization began to grown in the V, R, and I filters at a different position angle. A model to interpret this behavior is proposed. Results are presented for the expansion of the outer layers of the SN and the evolution of the photospheric density. 28 references.

  17. Anomalous thermoelectric power behaviour in PrSn 3 and NdSn 3

    Science.gov (United States)

    Kletowski, Z.

    2006-03-01

    Results of the thermoelectric power (TEP) measurements done on monocrystalline samples of RESn 3 compounds (RE=La, Pr, Nd, and Gd) are presented for the temperature range of 5.5-300 K. It was found that the TEP is positive and weakly temperature dependent at temperatures T>100 K. For T<100 K pronounced anomalies have been observed for the PrSn 3 and the NdSn 3 compounds in the vicinity of 10 K.We argue that the Kondo and crystal field effects cause these anomalies. A shape of the TEP anomaly found for PrSn 3 resembles very much that observed in the electrical resistivity.

  18. Weierstrass Type Representation of Willmore Surfaces in Sn

    Institute of Scientific and Technical Information of China (English)

    Qiao Ling XIA; Yi Bing SHEN

    2004-01-01

    In this paper, we reformulate the Euler-Lagrange equations of Willmore surfaces in Sn as the flatness of a family of certain loop algebra-valued 1-forms. Therefore we can give the Weierstrass type representation of conformal Willmore surfaces. We also discuss the relations between conformal Willmore surfaces in Sn and minimal surfaces in constant curvature spaces Sn, Rn, Hn, and prove that some special Willmore surfaces can be derived from minimal surfaces in Sn, Rn, Hn.

  19. Tin (Sn) for enhancing performance in silicon CMOS

    KAUST Repository

    Hussain, Aftab M.

    2013-10-01

    We study a group IV element: tin (Sn) by integrating it into silicon lattice, to enhance the performance of silicon CMOS. We have evaluated the electrical properties of the SiSn lattice by performing simulations using First-principle studies, followed by experimental device fabrication and characterization. We fabricated high-κ/metal gate based Metal-Oxide-Semiconductor capacitors (MOSCAPs) using SiSn as channel material to study the impact of Sn integration into silicon. © 2013 IEEE.

  20. Gamma bandgap determination in pseudomorphic GeSn layers grown on Ge with up to 15% Sn content

    Science.gov (United States)

    Gassenq, A.; Milord, L.; Aubin, J.; Guilloy, K.; Tardif, S.; Pauc, N.; Rothman, J.; Chelnokov, A.; Hartmann, J. M.; Reboud, V.; Calvo, V.

    2016-12-01

    Adding Tin (Sn) to Germanium (Ge) can turn it into a direct bandgap group IV semiconductor emitting in the mid-infrared wavelength range. Several approaches are currently being investigated to improve the GeSn devices. It has been theoretically predicted that the strain can improve their optical properties. However, the impact of strain on band parameters has not yet been measured for really high Sn contents (i.e., above 11%). In this work, we have used the photocurrent and photoluminescence spectroscopy to measure the gamma bandgap in compressively strained GeSn layers grown on Ge buffers. A good agreement is found with the modeling and the literature. We show here that the conventional GeSn deformation potentials used in the literature for smaller Sn contents can be applied up to 15% Sn. This gives a better understanding of strained-GeSn for future laser designs.

  1. Sputtering deposition of P-type SnO films with SnO₂ target in hydrogen-containing atmosphere.

    Science.gov (United States)

    Hsu, Po-Ching; Hsu, Chao-Jui; Chang, Ching-Hsiang; Tsai, Shiao-Po; Chen, Wei-Chung; Hsieh, Hsing-Hung; Wu, Chung-Chih

    2014-08-27

    In this work, we had investigated sputtering deposition of p-type SnO using the widely used and robust SnO2 target in a hydrogen-containing reducing atmosphere. The effects of the hydrogen-containing sputtering gas on structures, compositions, optical, and electrical properties of deposited SnOx films were studied. Results show that polycrystalline and SnO-dominant films could be readily obtained by carefully controlling the hydrogen gas ratio in the sputtering gas and the extent of reduction reaction. P-type conductivity was unambiguously observed for SnO-dominant films with traceable Sn components, exhibiting a p-type Hall mobility of up to ∼3 cm(2) V(-1) s(-1). P-type SnO thin-film transistors using such SnO-dominant films were also demonstrated.

  2. Raman spectral shift versus strain and composition in GeSn layers with 6%-15% Sn content

    Science.gov (United States)

    Gassenq, A.; Milord, L.; Aubin, J.; Pauc, N.; Guilloy, K.; Rothman, J.; Rouchon, D.; Chelnokov, A.; Hartmann, J. M.; Reboud, V.; Calvo, V.

    2017-03-01

    GeSn alloys are the subject of intense research activities as these group IV semiconductors present direct bandgap behaviors for high Sn contents. Today, the control of strain becomes an important challenge to improve GeSn devices. Strain micro-measurements are usually performed by Raman spectroscopy. However, different relationships linking the Raman spectral shifts to the built-in strain can be found in the literature. They were deduced from studies on low Sn content GeSn layers (i.e., xSn contributions of strain and chemical composition on the Ge-Ge Raman spectral shift. We have shown that the GeSn Raman-strain coefficient for high Sn contents is higher compared with that for pure Ge.

  3. Highly ionized region surrounding SN Refsdal revealed by MUSE

    NARCIS (Netherlands)

    Karman, W.; Grillo, C.; Balestra, I.; Rosati, P.; Caputi, K. I.; Di Teodoro, E.; Fraternali, F.; Gavazzi, R.; Mercurio, A.; Prochaska, J. X.; Rodney, S.; Treu, T.

    2016-01-01

    Supernova (SN) Refsdal is the first multiply imaged, highly magnified, and spatially resolved SN ever observed. The SN exploded in a highly magnified spiral galaxy at z = 1.49 behind the Frontier Fields cluster MACS1149, and provides a unique opportunity to study the environment of SNe at high z. We

  4. Metallic Sn spheres and SnO2@C core-shells by anaerobic and aerobic catalytic ethanol and CO oxidation reactions over SnO2 nanoparticles.

    Science.gov (United States)

    Kim, Won Joo; Lee, Sung Woo; Sohn, Youngku

    2015-08-24

    SnO2 has been studied intensely for applications to sensors, Li-ion batteries and solar cells. Despite this, comparatively little attention has been paid to the changes in morphology and crystal phase that occur on the metal oxide surface during chemical reactions. This paper reports anaerobic and aerobic ethanol and CO oxidation reactions over SnO2 nanoparticles (NPs), as well as the subsequent changes in the nature of the NPs. Uniform SnO2@C core-shells (10 nm) were formed by an aerobic ethanol oxidation reaction over SnO2 NPs. On the other hand, metallic Sn spheres were produced by an anaerobic ethanol oxidation reaction at 450 °C, which is significantly lower than that (1200 °C) used in industrial Sn production. Anaerobic and aerobic CO oxidation reactions were also examined. The novelty of the methods for the production of metallic Sn and SnO2@C core-shells including other anaerobic and aerobic reactions will contribute significantly to Sn and SnO2-based applications.

  5. Photo and electroluminescence of ZnSe: Sn and ZnSe:(Sn, Pr) phosphors

    Science.gov (United States)

    Mishra, A. K.; Mishra, S. K.; Pandey, S. P.; Lakshmi Mishra, Kshama

    2016-09-01

    We have prepared ZnSe (luminescent grade) phosphor doped with Sn and (Sn,Pr) with varying concentration in an inert atmosphere in a silica tubular furnace at temperature of (780 ± 20) °C for 1 hr to obtain ZnSe:Sn and ZnSe: (Sn,Pr) phosphors. The photo luminescence (PL) and electroluminescence (EL) spectra of these phosphors have been studied at room temperature and results were discussed in the light of existing models. Dependence of EL emission on the voltage frequency has also been carried out. It is found that the plot between the integrated light intensity versus 1/√Vrms is a straight line suggesting the existence of Mott-Schottky type barrier on the metal semiconductor interface.

  6. Spectroscopic classification of SN2017gvr as a peculiar type Ib SN

    Science.gov (United States)

    Martinez, Jorge; Galbany, L.; Gonzalez-Gaitan, S.; Forster, F.

    2017-09-01

    We report the spectroscopic classification of SN2017gvr as a peculiar type Ib supernova discovered by the OGLE-IV Real-time Transient Search (Wyrzykowski et al., 2014 arxiv:1409.1095; http://ogle.astrouw.edu.pl/).

  7. SN 2005ap: A Most Brilliant Explosion

    CERN Document Server

    Quimby, Robert M; Wheeler, J Craig; Höflich, Peter; Akerlof, Carl W; Rykoff, Eli S

    2007-01-01

    We present unfiltered photometric observations with ROTSE-III and optical spectroscopic follow-up with the HET and Keck of the most luminous supernova yet identified, SN 2005ap. The spectra taken about 3 days before and 6 days after maximum light show narrow emission lines (likely originating in the dwarf host) and absorption lines at a redshift of z=0.2832, which puts the peak unfiltered magnitude at -22.7 +/- 0.1 absolute. Broad P-Cygni features corresponding to H-alpha, CIII, NIII, and OIII, are further detected with a photospheric velocity of ~20,000 km/s. Unlike other highly luminous supernovae such as 2006gy and 2006tf that show slow photometric evolution, the light curve of SN 2005ap indicates a 1-3 week rise to peak followed by a relatively rapid decay. The spectra also lack the distinct emission peaks from moderately broadened (FWHM ~ 2,000 km/s) Balmer lines seen in SN 2006gy and SN 2006tf. We briefly discuss the origin of the extraordinary luminosity from a strong interaction as may be expected fro...

  8. Valence modulations in CeRuSn

    NARCIS (Netherlands)

    Feyerherm, R.; Dudzik, E.; Prokeš, K.; Mydosh, J.A.; Huang, Y.K.; Pöttgen, R.

    2014-01-01

    CeRuSn exhibits an extraordinary room temperature structure at 300 K with the coexistence of two types of Ce ions, namely trivalent Ce3+ and intermediate-valent Ce(4−δ)+, in a metallic environment. The ordered arrangement of these two Ce types on specific crystallographic sites results in a doubling

  9. Beta decay of {sup 103}Sn

    Energy Technology Data Exchange (ETDEWEB)

    Kavatsyuk, O.; Kavatsyuk, M. [GSI, Darmstadt (Germany); National Taras Shevcjenko Univ. of Kyiv (Australia); Batist, L. [St. Petersburg Nuclear Physics Inst. (Russian Federation); Univ. di Napoli (Italy); INFN, Napoli (Italy); Banu, A.; Becker, F.; Bruechle, W.; Doering, J.; Gorska, M.; Grawe, H.; Kirchner, R.; Mandal, S.; Mazzocchi, C.; Plettner, C.; Roeckl, E.; Schaedel, M. [GSI, Darmstadt (Germany); Blazhev, A. [GSI, Darmstadt (Germany); Univ. Sofia (Bulgaria); Faestermann, T. [Technische Universitaet Muenchen (Germany); Janas, Z.; Karny, M.; Plochocki, A.; Zylicz, J. [University of Warsaw (Poland); Jungclaus, A. [Universidad Autonoma de Madrid, Departamento de Fisica Teorica (Spain); La Commara, M.; Romoli, M. [INFN, Napoli (Italy); Mukha, I. [GSI, Darmstadt (Germany); Kurchatov Inst. Moscow (Russian Federation); Muralithar, S. [GSI, Darmstadt (Germany); Forschungszentrum Rossendorf (Germany); Schwengner, R. [Forschungszentrum Rossendorf (Germany)

    2005-08-01

    The {beta} decay of {sup 103}Sn, a three-neutron-particle nucleus with respect to the {sup 100}Sn core, was investigated at the GSI on-line mass separator using an array of 17 germanium crystals and a total absorption spectrometer. A total of 31 {beta}-delayed {gamma}-rays (29 new) of the {sup 103}Sn{yields}{sup 103}In decay were observed and, on the basis of {beta}-{gamma}-{gamma} coincidences, the {sup 103}Sn decay scheme was established for the first time. By means of total absorption spectroscopy, {beta} intensities, the Gamow-Teller strength distribution and the summed Gamow-Teller strength value of 3.5{+-}0.5 were determined for this decay. Its half-life and Q{sub EC} value were found to be 7.0{+-}0.2 s and 7.64{+-}0.7 MeV, respectively. The {beta}-delayed proton branching ratio was measured to be 1.2{+-}0.1%. The results are discussed in comparison with shell-model predictions based on realistic and empirical interactions. (orig.)

  10. Reaction mechanisms: Stripping down SN2

    Science.gov (United States)

    Orr-Ewing, Andrew J.

    2012-07-01

    The mechanism of the SN2 reaction is fundamental to understanding and controlling the stereochemistry of organic reactions, but surrounding solvent molecules may complicate the textbook picture. Micro-solvation studies have now explored the stereochemical consequences of the presence of one or two solvent molecules.

  11. Atmospheric pressure chemical vapour deposition of SnSe and SnSe{sub 2} thin films on glass

    Energy Technology Data Exchange (ETDEWEB)

    Boscher, Nicolas D.; Carmalt, Claire J.; Palgrave, Robert G. [Department of Chemistry, University College London, 20 Gordon Street, London, WC1H OAJ (United Kingdom); Parkin, Ivan P. [Department of Chemistry, University College London, 20 Gordon Street, London, WC1H OAJ (United Kingdom)], E-mail: i.p.parkin@ucl.ac.uk

    2008-06-02

    Atmospheric pressure chemical vapour deposition of tin monoselenide and tin diselenide films on glass substrate was achieved by reaction of diethyl selenide with tin tetrachloride at 350-650 {sup o}C. X-ray diffraction showed that all the films were crystalline and matched the reported pattern for SnSe and/or SnSe{sub 2}. Wavelength dispersive analysis by X-rays show a variable Sn:Se ratio from 1:1 to 1:2 depending on conditions. The deposition temperature, flow rates and position on the substrate determined whether mixed SnSe-SnSe{sub 2}, pure SnSe or pure SnSe{sub 2} thin films could be obtained. SnSe films were obtained at 650 {sup o}C with a SnCl{sub 4} to Et{sub 2}Se ratio greater than 10. The SnSe films were silver-black in appearance and adhesive. SnSe{sub 2} films were obtained at 600-650 {sup o}C they had a black appearance and were composed of 10 to 80 {mu}m sized adherent crystals. Films of SnSe only 100 nm thick showed complete absorbtion at 300-1100 nm.

  12. SN 2006oz: rise of a super-luminous supernova observed by the SDSS-II SN Survey

    DEFF Research Database (Denmark)

    Leloudas, Georgios; Chatzopoulos, E.; Dilday, B.;

    2012-01-01

    to contribute to a better understanding of these objects by studying SN 2006oz, a newly-recognized member of this class. Methods. We present multi-color light curves of SN 2006oz from the SDSS-II SN Survey that cover its rise time, as well as an optical spectrum that shows that the explosion occurred at z ~ 0...

  13. Spliceosomal small nuclear RNAs of Tetrahymena thermophila and some possible snRNA-snRNA base-pairing interactions

    DEFF Research Database (Denmark)

    Orum, H; Nielsen, Henrik; Engberg, J

    1991-01-01

    We have identified and characterized the full set of spliceosomal small nuclear RNAs (snRNAs; U1, U2, U4, U5 and U6) from the ciliated protozoan Tetrahymena thermophila. With the exception of U4 snRNA, the sizes of the T. thermophila snRNAs are closely similar to their metazoan homologues. The T...

  14. Characteristics of Reactive Ni3Sn4 Formation and Growth in Ni-Sn Interlayer Systems

    Science.gov (United States)

    Lis, Adrian; Kenel, Christoph; Leinenbach, Christian

    2016-06-01

    The near-isothermal growth and formation of Ni3Sn4 intermetallic compounds (IMC) in Ni-Sn interlayer systems was studied in the solid state at 473 K (200 °C) and under solid-liquid conditions at 523 and 573 K (250 °C and 300 °C) from an initial state of a few seconds. Scalloped solid-state IMC formation was mainly driven by grain boundary diffusion of Ni through the IMC layer combined with the grain coarsening of the IMC layer. Under solid-liquid conditions, the formation of faceted and needle-shaped Ni3Sn4 grains as well as an atypical IMC growth behavior with similar parabolic growth constants for 523 K and 573 K (250 °C and 300 °C) was observed within the first 180 seconds of the holding time, and IMC growth occurred as an isothermal solidification from the Ni-saturated Sn melt. Due to the progressive densification of the IMC layer and the diffusion-controlled growth, the kinetics slowed down by approximately one order of magnitude after 180 seconds of annealing. The final stage was characterized by the formation of IMC islands ahead of the interfacial Ni3Sn4 layer. Needle-like IMC growth was effectively suppressed under combined solid-state and solid-liquid conditions. Textured Ni3Sn4 IMC formation at the Ni-Sn interface was approved with pole figure measurements. The activation energy Q for solid-liquid IMC formation was calculated as 43.3 kJ/mol, and processing maps for IMC growth and Sn consumption were derived as functions of temperature and time, respectively.

  15. The melting diagram of the Ti-Zr-Sn system below 40 at.% Sn

    Energy Technology Data Exchange (ETDEWEB)

    Saltykov, V.A.; Meleshevich, K.A.; Samelyuk, A.V. [I.N. Frantsevich Institute for Problems of Materials Science, Street Krzhyzhanovsky, 3, Kiev 03142 (Ukraine); Bulanova, M.V. [I.N. Frantsevich Institute for Problems of Materials Science, Street Krzhyzhanovsky, 3, Kiev 03142 (Ukraine)], E-mail: bulanova@lycos.com; Tedenac, J.C. [Institut de Chimie moleculaire et des materiaux-I.C.G., UMR-CNRS 5253-Universite Montpellier II, case 1504, Pl. Eugene Bataillon, 34095 Montpellier Cedex 5 (France)

    2009-04-03

    By the methods of DTA, X-ray diffraction, metallography and EPMA, phase equilibria in the Ti-Zr-Sn system at <40 at.% Sn were studied. The partial liquidus and solidus projections, and the melting diagram (solidus + liquidus) were constructed. The liquidus surface is characterized by the presence of primary crystallization regions of ({beta}Ti) ({beta}), (Ti{sub 3}Sn) ({alpha}{sub 2}) and (Ti,Zr){sub 5}Sn{sub 3} (5/3) phases. The solidus surface is characterized by the presence of two three-phase fields, {beta} + {alpha}{sub 2} + 5/3 and {alpha}{sub 2} + (Ti{sub 2}Sn)(2/1) + 5/3. The first one results from an invariant four-phase equilibrium L{sub U} + {alpha}{sub 2} {r_reversible} {beta} + 5/3 taking place at 1510 {+-} 10 deg. C. The invariant point U is located at the composition {approx}53Ti-30Zr-17Sn. The second three-phase region results from an equilibrium at 1515 deg. C with participation of L + {alpha}{sub 2} + 5/3 + 2/1 phases. The character of the equilibrium is not determined. Two invariant three-phase equilibria were found, L{sub e{sub 1}}{r_reversible}{alpha}{sub 2}+5/3 at 1600-1650 deg. C and L{sub e{sub 4}}{r_reversible}{beta}+5/3 at 1423 deg. C.

  16. On integrable deformations of superstring sigma models related to AdSn×Sn supercosets

    Directory of Open Access Journals (Sweden)

    B. Hoare

    2015-08-01

    Full Text Available We consider two integrable deformations of 2d sigma models on supercosets associated with AdSn×Sn. The first, the “η-deformation” (based on the Yang–Baxter sigma model, is a one-parameter generalization of the standard superstring action on AdSn×Sn, while the second, the “λ-deformation” (based on the deformed gauged WZW model, is a generalization of the non-abelian T-dual of the AdSn×Sn superstring. We show that the η-deformed model may be obtained from the λ-deformed one by a special scaling limit and analytic continuation in coordinates combined with a particular identification of the parameters of the two models. The relation between the couplings and deformation parameters is consistent with the interpretation of the first model as a real quantum deformation and the second as a root of unity quantum deformation. For the AdS2×S2 case we then explore the effect of this limit on the supergravity background associated with the λ-deformed model. We also suggest that the two models may form a dual Poisson–Lie pair and provide direct evidence for this in the case of the integrable deformations of the coset associated with S2.

  17. 70 °C synthesis of high-Sn content (25%) GeSn on insulator by Sn-induced crystallization of amorphous Ge

    Energy Technology Data Exchange (ETDEWEB)

    Toko, K., E-mail: toko@bk.tsukuba.ac.jp; Oya, N.; Suemasu, T. [Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573 (Japan); Saitoh, N.; Yoshizawa, N. [Electron Microscope Facility, TIA, AIST, 16-1 Onogawa, Tsukuba 305-8569 (Japan)

    2015-02-23

    Polycrystalline GeSn thin films are fabricated on insulating substrates at low temperatures by using Sn-induced crystallization of amorphous Ge (a-Ge). The Sn layer stacked on the a-Ge layer (100-nm thickness each) had two roles: lowering the crystallization temperature of a-Ge and composing GeSn. Slow annealing at an extremely low temperature of 70 °C allowed for a large-grained (350 nm) GeSn layer with a lattice constant of 0.590 nm, corresponding to a Sn composition exceeding 25%. The present investigation paves the way for advanced electronic optical devices integrated on a flexible plastic substrate as well as on a Si platform.

  18. Low Temperature Deposition of High-k/Metal Gate Stacks on High-Sn Content (Si)GeSn-Alloys.

    Science.gov (United States)

    Schulte-Braucks, C; von den Driesch, N; Glass, S; Tiedemann, A T; Breuer, U; Besmehn, A; Hartmann, J-M; Ikonic, Z; Zhao, Q T; Mantl, S; Buca, D

    2016-05-25

    (Si)GeSn is an emerging group IV alloy system offering new exciting properties, with great potential for low power electronics due to the fundamental direct band gap and prospects as high mobility material. In this Article, we present a systematic study of HfO2/TaN high-k/metal gate stacks on (Si)GeSn ternary alloys and low temperature processes for large scale integration of Sn based alloys. Our investigations indicate that SiGeSn ternaries show enhanced thermal stability compared to GeSn binaries, allowing the use of the existing Si technology. Despite the multielemental interface and large Sn content of up to 14 atom %, the HfO2/(Si)GeSn capacitors show small frequency dispersion and stretch-out. The formed TaN/HfO2/(Si)GeSn capacitors present a low leakage current of 2 × 10(-8) A/cm(2) at -1 V and a high breakdown field of ∼8 MV/cm. For large Sn content SiGeSn/GeSn direct band gap heterostructures, process temperatures below 350 °C are required for integration. We developed an atomic vapor deposition process for TaN metal gate on HfO2 high-k dielectric and validated it by resistivity as well as temperature and frequency dependent capacitance-voltage measurements of capacitors on SiGeSn and GeSn. The densities of interface traps are deduced to be in the low 10(12) cm(-2) eV(-1) range and do not depend on the Sn-concentration. The new processes developed here are compatible with (Si)GeSn integration in large scale applications.

  19. Diffusion couple studies of the Ni-Bi-Sn system

    Directory of Open Access Journals (Sweden)

    Vassilev G.

    2012-01-01

    Full Text Available Investigations of Ni-Bi-Sn system were performed in order to inquire the phase diagram and to assess some diffusion kinetic parameters. For this purpose diffusion couples consisting of solid nickel (preliminary electroplated with tin and liquid Bi-Sn phase were annealed at 370 °C. Three compositions (0.8, 0.6 and 0.4 mole fractions Sn of the Bi-Sn melts were chosen. Annealing times from 24 to 216 h were applied. The phase and chemical compositions of the contact zone were determined by means of electron scanning microscope. It was confirmed that the diffusion layers consist mainly of Ni3Sn4 but other intermetallic phases grow as well. For the first time metastable Ni-Sn phases as NiSn and NiSn8 (NiSn9 were observed in metallurgical alloys (i.e. not in electroplated samples. The existence of a ternary compound previously reported in the literature was confirmed. More than one ternary Ni-Bi-Sn compounds might possibly be admitted. A growth coefficient of (2.29 ± 0.02 x 10-15 m2 s-1 was obtained. It was found that the apparent activation energy for diffusion layers growth (18 ± 8 kJ mol-1 is inferior to that one assessed at growth from solid state Bi-Sn mixtures (88 ± 12 kJ mol-1.

  20. (Si)GeSn nanostructures for light emitters

    Science.gov (United States)

    Rainko, D.; Stange, D.; von den Driesch, N.; Schulte-Braucks, C.; Mussler, G.; Ikonic, Z.; Hartmann, J. M.; Luysberg, M.; Mantl, S.; Grützmacher, D.; Buca, D.

    2016-05-01

    Energy-efficient integrated circuits for on-chip or chip-to-chip data transfer via photons could be tackled by monolithically grown group IV photonic devices. The major goal here is the realization of fully integrated group IV room temperature electrically driven lasers. An approach beyond the already demonstrated optically-pumped lasers would be the introduction of GeSn/(Si)Ge(Sn) heterostructures and exploitation of quantum mechanical effects by reducing the dimensionality, which affects the density of states. In this contribution we present epitaxial growth, processing and characterization of GeSn/(Si)Ge(Sn) heterostructures, ranging from GeSn/Ge multi quantum wells (MQWs) to GeSn quantum dots (QDs) embedded in a Ge matrix. Light emitting diodes (LEDs) were fabricated based on the MQW structure and structurally analyzed via TEM, XRD and RBS. Moreover, EL measurements were performed to investigate quantum confinement effects in the wells. The GeSn QDs were formed via Sn diffusion /segregation upon thermal annealing of GeSn single quantum wells (SQW) embedded in Ge layers. The evaluation of the experimental results is supported by band structure calculations of GeSn/(Si)Ge(Sn) heterostructures to investigate their applicability for photonic devices.

  1. Beta Decay of 101Sn

    Energy Technology Data Exchange (ETDEWEB)

    Kavatsyuk, O. [Gesellschaft fur Schwerionenforschung (GSI), Germany; Mazzocchi, C. [Gesellschaft fur Schwerionenforschung (GSI), Germany; Janas, Z. [University of Warsaw; Banu, A. [Gesellschaft fur Schwerionenforschung (GSI), Germany; Batist, L. [St. Petersburg Nuclear Physics Institute; Becker, F. [Gesellschaft fur Schwerionenforschung (GSI), Germany; Blazhev, A. [Gesellschaft fur Schwerionenforschung (GSI), Germany; Bruchle, W. [Gesellschaft fur Schwerionenforschung (GSI), Germany; Doring, J. [Gesellschaft fur Schwerionenforschung (GSI), Germany; Faestermann, T. [Technische Universitat Munchen; Gorska, M. [Gesellschaft fur Schwerionenforschung (GSI), Germany; Grawe, H. [GSI-Hemholtzzentrum fur Schwerionenforschung, Darmstadt, Germany; Jungclaus, A. [Instituto Estructura de la Materia, Madrid; Karny, M. [University of Warsaw; Kavatsyuk, M. [Gesellschaft fur Schwerionenforschung (GSI), Germany; Klepper, O. [Gesellschaft fur Schwerionenforschung (GSI), Germany; Kirchner, R. [Gesellschaft fur Schwerionenforschung (GSI), Germany; La Commara, M. [Universita Federico II and INFN Napoli; Miernik, K. [University of Warsaw; Mukha, I. [Gesellschaft fur Schwerionenforschung (GSI), Germany; Plettner, C. [Gesellschaft fur Schwerionenforschung (GSI), Germany; Plochocki, A. [University of Warsaw; Roeckl, E. [Gesellschaft fur Schwerionenforschung (GSI), Germany; Romoli, M. [Universita Federico II and INFN Napoli; Rykaczewski, Krzysztof Piotr [ORNL; Schadel, M. [Gesellschaft fur Schwerionenforschung (GSI), Germany; Schmidt, K. [Continental Teves AG & Co., Frankfurt am Main, Germany; Schwengner, R. [Forschungszentrum Rossendorf, Dresden, Germany; Zylicz, J. [University of Warsaw

    2007-01-01

    The {beta} decay of the very neutron-deficient isotope 101Sn was studied at the GSI on-line mass separator using silicon detectors for recording charged particles and germanium detectors for {gamma}-ray spectroscopy. Based on the {beta}-delayed proton data the production cross-section of 101Sn in the 50Cr + 58Ni fusion-evaporation reaction was determined to be about 60nb. The half-life of 101Sn was measured to be 1.9(3)s. For the first time {beta}-delayed {gamma}-rays of 101Sn were tentatively identified, yielding weak evidence for a cascade of 352 and 1065keV transitions in 101In. The results for the 101Sn decay as well as those from previous work on the 103Sn decay are discussed by comparing them to predictions obtained from shell model calculations employing a new interaction in the 88Sr to 132Sn model space.

  2. Martensitic Transformation in Ni-Mn-Sn-Co Heusler Alloys

    Directory of Open Access Journals (Sweden)

    Alexandre Deltell

    2015-04-01

    Full Text Available Thermal and structural austenite to martensite reversible transition was studied in melt spun ribbons of Ni50Mn40Sn5Co5, Ni50Mn37.5Sn7.5Co5 and Ni50Mn35Sn10Co5 (at. % alloys. Analysis of X-ray diffraction patterns confirms that all alloys have martensitic structure at room temperature: four layered orthorhombic 4O for Ni50Mn40Sn5Co5, four layered orthorhombic 4O and seven-layered monoclinic 14M for Ni50Mn37.5Sn7.5Co5 and seven-layered monoclinic 14M for Ni50Mn35Sn5Co5. Analysis of differential scanning calorimetry scans shows that higher enthalpy and entropy changes are obtained for alloy Ni50Mn37.5Sn7.5Co5, whereas transition temperatures increases as increasing valence electron density.

  3. Chemically Resolved Structure of the Sn/Ge(111) Surface

    Science.gov (United States)

    Lee, Tien-Lin; Warren, Samantha; Cowie, Bruce C. C.; Zegenhagen, Jörg

    2006-02-01

    The structure and chemical states of the Sn/Ge(111) surface are characterized by x-ray standing waves combined with photoemission. For the room temperature 3×3 phase two chemical components, approximately 0.4 eV apart, are observed for both Sn 3d and 4d core levels. Our model-independent, x-ray standing wave analysis shows unambiguously that the two components originate from Sn adatoms located at two different heights separated vertically by 0.23 Å, in favor of a model composed of a fluctuating Sn layer. Contrary to the most accepted scenario, the stronger Sn 3d and 4d components, which appear at the lower binding-energy sides and account for 2/3 of the Sn adatoms, are identified to be associated with the higher Sn position, manifesting their filled valence state character.

  4. Low Temperature Deposition of High-k/Metal Gate Stacks on High-Sn Content (Si)GeSn-Alloys

    OpenAIRE

    Schulte-Braucks, C; Von Den Driesch, N; Glass, S; Tiedemann, AT; Breuer, U; Besmehn, A; Hartmann, JM; Ikonic, Z; Zhao, QT; Mantl, S; Buca, D.

    2016-01-01

    (Si)GeSn is an emerging group IV alloy system offering new exciting properties, with great potential for low power electronics due to the fundamental direct band gap and prospects as high mobility material. In this Article, we present a systematic study of HfO2/TaN high-k/metal gate stacks on (Si)GeSn ternary alloys and low temperature processes for large scale integration of Sn based alloys. Our investigations indicate that SiGeSn ternaries show enhanced thermal stability compared to GeSn bi...

  5. Lattice Thermal Conductivity of the Binary and Ternary Group-IV Alloys Si-Sn, Ge-Sn, and Si-Ge-Sn

    Science.gov (United States)

    Khatami, S. N.; Aksamija, Z.

    2016-07-01

    Efficient thermoelectric (TE) energy conversion requires materials with low thermal conductivity and good electronic properties. Si-Ge alloys, and their nanostructures such as thin films and nanowires, have been extensively studied for TE applications; other group-IV alloys, including those containing Sn, have not been given as much attention as TEs, despite their increasing applications in other areas including optoelectronics. We study the lattice thermal conductivity of binary (Si-Sn and Ge-Sn) and ternary (Si-Ge-Sn) alloys and their thin films in the Boltzmann transport formalisms, including a full phonon dispersion and momentum-dependent boundary-roughness scattering. We show that Si-Sn alloys have the lowest conductivity (3 W /mK ) of all the bulk alloys, more than 2 times lower than Si-Ge, attributed to the larger difference in mass between the two constituents. In addition, we demonstrate that thin films offer an additional reduction in thermal conductivity, reaching around 1 W /mK in 20-nm-thick Si-Sn, Ge-Sn, and ternary Si-Ge-Sn films, which is near the conductivity of amorphous SiO2 . We conclude that group-IV alloys containing Sn have the potential for high-efficiency TE energy conversion.

  6. Synthesis of carbon-supported PdSn-SnO2 nanoparticles with different degrees of interfacial contact and enhanced catalytic activities for formic acid oxidation.

    Science.gov (United States)

    Wang, Hui; Liu, Ziyue; Ma, Yanjiao; Julian, Key; Ji, Shan; Linkov, Vladimir; Wang, Rongfang

    2013-09-07

    The conjunction of the PdSn alloy and SnO2 is of interest for improving catalytic activity in formic acid oxidation (FAO). Here, we report the synthesis of PdSn-SnO2 nanoparticles and a study of their catalytic FAO activity. Different degrees of interfacial contact between SnO2 and PdSn were obtained using two different stabilizers (sodium citrate and EDTA) during the reduction process in catalyst preparation. Compared to the PdSn alloy, PdSn-SnO2 supported on carbon black showed enhanced FAO catalytic activity due to the presence of SnO2 species. It was also found that interfacial contact between the PdSn alloy and the SnO2 phase has an impact on the activity towards CO oxidation and FAO.

  7. Demethylation restores SN38 sensitivity in cells with acquired resistance to SN38 derived from human cervical squamous cancer cells

    Science.gov (United States)

    TANAKA, TETSUJI; BAI, TAO; TOUJIMA, SAORI; UTSUNOMIYA, TOMOKO; MATSUOKA, TOSHIHIDE; KOBAYASHI, AYA; YAMAMOTO, MADOKA; SASAKI, NORIYUKI; TANIZAKI, YUKO; UTSUNOMIYA, HIROTOSHI; TANAKA, JUNKO; YUKAWA, KAZUNORI

    2012-01-01

    Using seven monoclonal SN38-resistant subclones established from ME180 human cervical squamous cell carcinoma cells, we examined the demethylation effects of 5-aza-2′-deoxycytidine (5-aza-CdR) on the SN38-sensitivity of the cells as well as the expression of death-associated protein kinase (DAPK) in the SN38-resistant cells. The DAPK expression levels were evaluated among parent ME180 cells, SN38-resistant ME180 cells and cisplatin-resistant ME180 cells by methylation-specific DAPK-PCR, quantitative RT-PCR and western blot analysis. The SN38-resistant cells co-treated with SN38 and 5-aza-CdR strongly exhibited enhanced SN38-sensitivities resembling those found in the parent cells. In the SN38-resistant subclones, no relationships were found between the restored SN38 sensitivity and hypermethylation of the DAPK promoter, DAPK mRNA expression, DAPK protein expression and induction of DAPK protein after 5-aza-CdR treatment, unlike the strong suppression of 5-aza-CdR-induced DAPK protein expression in the cisplatin-resistant subclones. These findings indicate that reversibly methylated molecules, but not DAPK, may regulate SN38 resistance, and that demethylating agents can be strong sensitizing anticancer chemotherapeutic drugs for SN38-resistant cancers. PMID:22246465

  8. Hyperfine field distributions in disordered Mn2CoSn and Mn2NiSn Heusler alloys

    Indian Academy of Sciences (India)

    N Lakshmi; Anil Pandey; K Venugopalan

    2002-08-01

    Heusler alloys, Mn2CoSn and Mn2NiSn, were prepared and characterized by X-ray studies. Mössbauer studies using Sn-119 were carried out to investigate the hyperfine fields present at the Sn site in these alloys. The hyperfine field distribution in these alloys as well as X-ray studies point to the chemical disorder present in both alloys. Co-existence of a paramagnetic portion along with the magnetic hyperfine part was observed in Mn2CoSn even at low temperatures, while this was not found in Mn2NiSn spectra. Hyperfine fields at Sn site were calculated using Blandin and Campbell model and compared with the experimental results.

  9. Sn migration control at high temperature due to high deposition speed for forming high-quality GeSn layer

    Science.gov (United States)

    Taoka, Noriyuki; Capellini, Giovanni; von den Driesch, Nils; Buca, Dan; Zaumseil, Peter; Schubert, Markus Andreas; Klesse, Wolfgang Matthias; Montanari, Michele; Schroeder, Thomas

    2016-03-01

    A key factor for controlling Sn migration during GeSn deposition at a high temperature of 400 °C was investigated. Calculated results with a simple model for the Sn migration and experimental results clarified that low-deposition-speed (vd) deposition with vd’s of 0.68 and 2.8 nm/min induces significant Sn precipitation, whereas high-deposition-speed (vd = 13 nm/min) deposition leads to high crystallinity and good photoluminescence spectrum of the GeSn layer. These results indicate that vd is a key parameter, and that control of Sn migration at a high temperature is possible. These results are of great relevance for the application of high-quality Sn-based alloys in future optoelectronics devices.

  10. Synthesis kinetics of Mg_2Sn in Mg-Sn powder mixture using non-isothermal differential scanning calorimetry

    Institute of Scientific and Technical Information of China (English)

    WU Yu-feng; DU Wen-bo; ZUO Tie-yong

    2009-01-01

    The non-isothermal heating process of Mg-Sn powder mixture was studied by differential scanning calorimetry(DSC) technique and the synthesis kinetics of Mg_2Sn was evaluated by the model-free and model-fitting methods. The activation energy and conversion function of Mg_2Sn synthesis reaction are calculated to be 281.7 kJ/mol and g(α)=[-ln(1-α)]~(1/4), respectively. The reaction mechanism of 2Mg+Sn→Mg_2Sn under non-isothermal condition is regarded as "nucleation and growth". During the non-isothermal heating process, the phase transformation occurred in the Mg-Sn powder mixture was analyzed by XRD and the microstructure evolution of Mg_2Sn was observed by optical microscopy, which is in good agreement with the reaction mechanism of 2Mg+Sn→Mg_2Sn deduced from the kinetic evaluation.

  11. Effect of Sn content on the properties of passive film on PbSn alloy in sulfuric acid solution

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    The effect of Sn content on properties of anodic film formed on PbSn alloys in sulfuric acid solution was investigated using linear sweeping voltage (LSV), cyclic voltammetry (CV), and a.c. voltammetry (ACV), based on the Mott-Schottky analysis. The results revealed that the addition of Sn into lead alloys can promote the corrosion resistance property and could decrease the impedance of anodic film; these results were more remarkable with enhancing the Sn content. The over potential of oxygen evolution on lead alloys enhanced with the increase of Sn content. The Mott-Schottky analysis indicated that the passive film appeared an n-type semiconductor, and the donor density of passive film increased with increasing Sn content. The increased vacancies in the passive film with Sn content increasing could illustrate this trend.

  12. Moessbauer Investigation of Electrodeposited Sn-Zn, Sn-Cr, Sn-Cr-Zn and Fe-Ni-Cr Coatings

    Energy Technology Data Exchange (ETDEWEB)

    Kuzmann, E.; Stichleutner, S. [Eoetvoes University, Department of Nuclear Chemistry and Research Group of Nuclear Methods in Structural Chemistry HAS (Hungary); El-Sharif, M.; Chisholm, C. U. [Glasgow Caledonian University (United Kingdom); Sziraki, L.; Homonnay, Z.; Vertes, A. [Eoetvoes University, Department of Nuclear Chemistry and Research Group of Nuclear Methods in Structural Chemistry HAS (Hungary)

    2002-06-15

    {sup 57}Fe and {sup 119}Sn CEMS, XRD and electrochemical measurements were used to investigate the effect of the preparation parameters and the components on the structure and phase composition of electrodeposited Fe-Ni-Cr alloys in connection with their corrosion behavior. XRD of the electrodeposits reflect an amorphous-like character. {sup 57}Fe CEM spectra of Fe-Ni-Cr electrodeposited samples, prepared in a continuous flow plating plastic circulation cell with variation of current density, electrolyte velocity and temperature, can be evaluated as a doublet associated with a highly disordered paramagnetic solid solution phase. This phase was identified earlier in Fe-Ni-Cr electrodeposits that were prepared by another plating method and contained both ferromagnetic and paramagnetic metastable phases. This is the first time that we have succeeded to prepare Fe-Ni-Cr alloys containing only the metastable paramagnetic phase. The effect of the plating parameters on the structure is also analysed by the quadrupole splitting distribution method. {sup 119}Sn CEM spectra of all Sn-containing plated alloys show a broad line envelop which can be decomposed at least into two components. One can be associated with {beta}-tin. The other one can be assigned to an alloy phase. The structure and distribution of microenvironments of these phases depends on the plating parameters especially on the parameters of the reverse pulse applied.

  13. SnO{sub 2} thin films grown by atomic layer deposition using a novel Sn precursor

    Energy Technology Data Exchange (ETDEWEB)

    Choi, Min-Jung [Electronic Materials Research Center, Korea Institute of Science and Technology, Seoul, 136-791 (Korea, Republic of); Department of Materials Science and Engineering, Yonsei University, Seoul, 120-749 (Korea, Republic of); Cho, Cheol Jin [Electronic Materials Research Center, Korea Institute of Science and Technology, Seoul, 136-791 (Korea, Republic of); Department of Materials Science and Engineering, Seoul National University, Seoul, 151-744 (Korea, Republic of); Kim, Kwang-Chon; Pyeon, Jung Joon [Electronic Materials Research Center, Korea Institute of Science and Technology, Seoul, 136-791 (Korea, Republic of); Park, Hyung-Ho [Department of Materials Science and Engineering, Yonsei University, Seoul, 120-749 (Korea, Republic of); Kim, Hyo-Suk; Han, Jeong Hwan; Kim, Chang Gyoun; Chung, Taek-Mo [Division of Advanced Materials, Korea Research Institute of Chemical Technology (KRICT), Daejeon, 305-600 (Korea, Republic of); Park, Tae Joo [Department of Materials Science and Engineering, Hanyang University, Ansan, 426-791 (Korea, Republic of); Kwon, Beomjin [Electronic Materials Research Center, Korea Institute of Science and Technology, Seoul, 136-791 (Korea, Republic of); Jeong, Doo Seok; Baek, Seung-Hyub [Electronic Materials Research Center, Korea Institute of Science and Technology, Seoul, 136-791 (Korea, Republic of); Department of Nanomaterials, Korea University of Science and Technology, Daejeon, 305-333 (Korea, Republic of); Kang, Chong-Yun; Kim, Jin-Sang [Electronic Materials Research Center, Korea Institute of Science and Technology, Seoul, 136-791 (Korea, Republic of); Kim, Seong Keun, E-mail: s.k.kim@kist.re.kr [Electronic Materials Research Center, Korea Institute of Science and Technology, Seoul, 136-791 (Korea, Republic of); Department of Nanomaterials, Korea University of Science and Technology, Daejeon, 305-333 (Korea, Republic of)

    2014-11-30

    Highlights: • We developed a new ALD process for SnO{sub 2} films using dimethylamino-2-methyl-2-propoxy-tin(II) as a novel Sn precursor. • The SnO{sub 2} films grown from Sn(dmamp){sub 2} has negligible impurity contents. • Sn ions in the films had a single binding state corresponding to Sn{sup 4+} in SnO{sub 2}. - Abstract: SnO{sub 2} thin films were grown by atomic layer deposition (ALD) with dimethylamino-2-methyl-2-propoxy-tin(II) (Sn(dmamp){sub 2}) and O{sub 3} in a temperature range of 100–230 °C. The ALD window was found to be in the range of 100–200 °C. The growth per cycle of the films in the ALD window increased with temperature in the range from 0.018 to 0.042 nm/cycle. Above 230 °C, the self-limiting behavior which is a unique characteristic of ALD, was not observed in the growth because of the thermal decomposition of the Sn(dmamp){sub 2} precursor. The SnO{sub 2} films were amorphous in the ALD window and exhibited quite a smooth surface. Sn ions in all films had a single binding state corresponding to Sn{sup 4+} in SnO{sub 2}. The concentration of carbon and nitrogen in the all SnO{sub 2} films was below the detection limit of the auger electron spectroscopy technique and a very small amount of carbon, nitrogen, and hydrogen was detected by secondary ions mass spectroscopy only. The impurity contents decreased with increasing the growth temperature. This is consistent with the increase in the density of the SnO{sub 2} films with respect to the growth temperature. The ALD process with Sn(dmamp){sub 2} and O{sub 3} shows excellent conformality on a hole structure with an aspect ratio of ∼9. This demonstrates that the ALD process with Sn(dmamp){sub 2} and O{sub 3} is promising for growth of robust and highly pure SnO{sub 2} films.

  14. Phase equilibria of the Cu-Sn-Ti ternary system at 823K

    Directory of Open Access Journals (Sweden)

    Guo-jun Zhou

    2017-02-01

    Full Text Available The isothermal section in the Cu-Sn enrich part of the Cu-Sn-Ti ternary system at 823K was determined by using solid-solid-liquid diffusion triple approach. One ternary compound CuSnTi was found, and 12 three-phase fields were detected. The following 10 three-phase regions are well established: CuTi2+CuTi+Sn5Ti6, Sn5Ti6+Sn3Ti2+ CuSnTi, Liquid+Sn3Ti2+CuSnTi, Liquid+CuSnTi+Cu3Sn, CuTi+Cu4Ti3+Sn5Ti6, CuSnTi+Cu4Ti3+Sn5Ti6, CuSnTi+Cu3Sn+Cu41Sn11, CuSnTi+Cu41Sn11+Bcc_a2, CuSnTi+Cu4Ti+Cu, and CuSnTi+Bcc_a2+Cu. Phase relations in the Ti-enrich corner of this system require further investigation.

  15. Investigation of Sn surface segregation during GeSn epitaxial growth by Auger electron spectroscopy and energy dispersive x-ray spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Tsukamoto, Takahiro; Suda, Yoshiyuki [Graduate School of Engineering, Tokyo University of Agriculture and Technology, 2-24-16 Naka-cho, Koganei, Tokyo 184-8588 (Japan); Hirose, Nobumitsu; Kasamatsu, Akifumi; Mimura, Takashi; Matsui, Toshiaki [National Institute of Information and Communications Technology, 4-2-1 Nukui-Kitamachi, Koganei, Tokyo 184-8795 (Japan)

    2015-02-02

    The mechanism of Sn surface segregation during the epitaxial growth of GeSn on Si (001) substrates was investigated by Auger electron spectroscopy and energy dispersive X-ray spectroscopy. Sn surface segregation depends on the growth temperature and Sn content of GeSn layers. During Sn surface segregation, Sn-rich nanoparticles form and move on the surface during the deposition, which results in a rough surface owing to facet formation. The Sn-rich nanoparticles moving on the surface during the deposition absorb Sn from the periphery and yield a lower Sn content, not on the surface but within the layer, because the Sn surface segregation and the GeSn deposition occur simultaneously. Sn surface segregation can occur at a lower temperature during the deposition compared with that during postannealing. This suggests that the Sn surface segregation during the deposition is strongly promoted by the migration of deposited Ge and Sn adatoms on the surface originating from the thermal effect of substrate temperature, which also suggests that limiting the migration of deposited Ge and Sn adatoms can reduce the Sn surface segregation and improve the crystallinity of GeSn layers.

  16. Syntheses and structures of Sc2Nb(4–x)Sn5, YNb6Sn6, and ErNb6Sn5: exploratory studies in ternary rare-earth niobium stannides.

    Science.gov (United States)

    Yue, Cheng-Yang; Lei, Xiao-Wu

    2012-02-20

    Three new rare-earth (RE) niobium stannides, namely, Sc(2)Nb(4-x)Sn(5) (x = 0.37, 0.52), YNb(6)Sn(6), and ErNb(6)Sn(5), have been obtained by reacting the mixture of corresponding pure elements at high temperature and structurally characterized by single-crystal X-ray diffraction studies. Sc(2)Nb(4-x)Sn(5) crystallizes in the orthorhombic space group Ibam (No. 72) and belongs to the V(6)Si(5) type. Its structure features a three-dimensional (3D) network composed of two-dimensionally (2D) corrugated [Nb(2)Sn(2)] and [Nb(2)Sn(3)] layers interconnected via Nb-Sn bonds, forming one type of one-dimensional (1D) narrow tunnels along the c axis occupied by Sc atoms. YNb(6)Sn(6) crystallizes in the hexagonal space group P6/mmm (No. 191) and adopts the HfFe(6)Ge(6) type, and ErNb(6)Sn(5) crystallizes in the trigonal space group R3m (No. 166) and belongs to the LiFe(6)Ge(5) type. Their structures both feature 3D networks based on 2D [Nb(3)Sn], [Sn(2)], and [RESn(2)] layers (RE = Y, Er). In YNb(6)Sn(6), one type of [Nb(3)Sn] layer is interconnected by [Sn(2)] and [YSn(2)] layers via Nb-Sn bonds to form a 3D network. However, in ErNb(6)Sn(5), two types of [Nb(3)Sn] layers are interlinked by [Sn(2)] and [ErSn(2)] layers via Nb-Sn bonds into a 3D framework. Electronic structure calculations and magnetic property measurements for "Sc(2)Nb(4)Sn(5)" and YNb(6)Sn(6) indicate that both compounds show semimetallic and temperature-independent diamagnetic behavior.

  17. Temperature dependent electrical resistivity of liquid Sn

    Science.gov (United States)

    Prajapati, A. V.; Sonvane, Y. A.; Patel, H. P.; Thakor, P. B.

    2016-05-01

    The present paper deals with the effect of temperature variation on the electrical resistivity (ρ) of liquid Sn(Tin). We have used a new parameter free pseudopotential along with screening Taylor et al and Farid et al local field correction functions. The Percus-Yevick Hard Sphere (PYHS) reference system is used to describe structural information. Zeeman formula has been used for finding resistivity with the variation of temperature. The balanced harmonies between present data and experimental data have been achieved with a minimal deviation. So, we concluded that our newly constructed model potential is an effective one to produce the data of electrical resistivity of liquid Sn(Tin) as a function of temperature.

  18. LARP Long Nb3Sn Quadrupole Design.

    Energy Technology Data Exchange (ETDEWEB)

    Ambrosio,G.; Andreev, N.; Anerella, M.; Barzi, E.; Bossert, R.; Caspi, S.; Chlachidize, G.; Dietderich, D.; Feher, S.; Felice, H.; Ferracin, P.; Ghosh, A.; Hafalia, A.R.; Hannaford, C.R.; Kashikhin, V.V.; Kerby, J.; Lamm, M.; Lietzke, A.; McInturff, A.; Muratore, J.; Nobrega, F.; Novitsky, I.; Sabbi, G.L.; Schmalzle, J.; Tartaglia, M.; Turrioni, D.; Wanderer, P.; Whitson, G.; Zlobin, A.V.

    2007-08-27

    A major milestone for the LHC Accelerator Research Program (LARP) is the test, by the end of 2009, of two 4m-long quadrupole magnets (LQ) wound with Nb{sub 3}Sn conductor. The goal of these magnets is to be a proof of principle that Nb{sub 3}Sn is a viable technology for a possible LHC luminosity upgrade. The design of the LQ is based on the design of the LARP Technological Quadrupoles, presently under development at FNAL and LBNL, with 90-mm aperture and gradient higher than 200 T/m. The design of the first LQ model will be completed by the end of 2007 with the selection of a mechanical design. In this paper we present the coil design addressing some fabrication technology issues, the quench protection study, and three designs of the support structure.

  19. SnET2: clinical update

    Science.gov (United States)

    Razum, Nicholas J.; Snyder, Albert B.; Doiron, Daniel R.

    1996-04-01

    Tin Ethyl Etiopurpurin, SnET2, is a synthetic chlorin analog presently in Phase-II/III clinical trials for the treatment of cutaneous cancers. Trials to date include the treatment of basal cell carcinomas, squamous cell carcinomas, breast adenocarcinomas metastatic to the chest wall and cutaneous Kaposi's sarcomas in AIDS patients. Results to date have shown significant clinical responses for drug doses between 1.0 mg/kg and 1.6 mg/kg, with the threshold for Kaposi's sarcoma being slightly higher than in other indications. Light doses from 100 J/cm2 to 300 J/cm2 were delivered from 24 to 72 hours post SnET2 infusion. Induced transient skin photosensitivity at the lower therapeutic doses has been mild, lasting approximately a week. Results of the Phase I and II trials are presented.

  20. Mode-Specific SN2 Reaction Dynamics.

    Science.gov (United States)

    Wang, Yan; Song, Hongwei; Szabó, István; Czakó, Gábor; Guo, Hua; Yang, Minghui

    2016-09-01

    Despite its importance in chemistry, the microscopic dynamics of bimolecular nucleophilic substitution (SN2) reactions is still not completely elucidated. In this publication, the dynamics of a prototypical SN2 reaction (F(-) + CH3Cl → CH3F + Cl(-)) is investigated using a high-dimensional quantum mechanical model on an accurate potential energy surface (PES) and further analyzed by quasi-classical trajectories on the same PES. While the indirect mechanism dominates at low collision energies, the direct mechanism makes a significant contribution. The reactivity is found to depend on the specific reactant vibrational mode excitation. The mode specificity, which is more prevalent in the direct reaction, is rationalized by a transition-state-based model.

  1. Crystallographic Orientation Effect on Electromigration in Ni-Sn Microbump

    Science.gov (United States)

    Huang, Yi-Ting; Chen, Chih-Hao; Chakroborty, Subhendu; Wu, Albert T.

    2017-09-01

    This article addresses the reliability challenges regarding electromigration in developing three-dimensional integrated circuits (3D-ICs). The line-type sandwich structure of Ni/Sn3.5Ag(15 μm)/Ni was used to simulate microbumps to examine the reliability of electromigration in 3D-IC technology. The solder strip of Ni/Sn3.5Ag(15 μm)/Ni was stressed with a current density of 1.0 × 104 A/cm2 at 150°C. The current stressing enhanced the reaction between the solder and Ni to form Ni3Sn4, which occupied the entire joint and transformed into a Ni/Ni3Sn4/Ni structure when the solder was completely consumed. Electron backscatter diffraction was used to analyze the crystallographic characteristics of Sn and Ni3Sn4 as related to the electromigration effect. The results indicated that the crystallographic orientation of Sn plays a significant role in the Ni/Sn3.5Ag/Ni, whereas the orientation of Ni3Sn4 is the dominant factor of diffusion behavior in the Ni/Ni3Sn4/Ni.

  2. Crystallographic Orientation Effect on Electromigration in Ni-Sn Microbump

    Science.gov (United States)

    Huang, Yi-Ting; Chen, Chih-Hao; Chakroborty, Subhendu; Wu, Albert T.

    2017-07-01

    This article addresses the reliability challenges regarding electromigration in developing three-dimensional integrated circuits (3D-ICs). The line-type sandwich structure of Ni/Sn3.5Ag(15 μm)/Ni was used to simulate microbumps to examine the reliability of electromigration in 3D-IC technology. The solder strip of Ni/Sn3.5Ag(15 μm)/Ni was stressed with a current density of 1.0 × 104 A/cm2 at 150°C. The current stressing enhanced the reaction between the solder and Ni to form Ni3Sn4, which occupied the entire joint and transformed into a Ni/Ni3Sn4/Ni structure when the solder was completely consumed. Electron backscatter diffraction was used to analyze the crystallographic characteristics of Sn and Ni3Sn4 as related to the electromigration effect. The results indicated that the crystallographic orientation of Sn plays a significant role in the Ni/Sn3.5Ag/Ni, whereas the orientation of Ni3Sn4 is the dominant factor of diffusion behavior in the Ni/Ni3Sn4/Ni.

  3. A review and prospects for Nb3Sn superconductor development

    Science.gov (United States)

    Xu, Xingchen

    2017-09-01

    Nb3Sn superconductors have significant applications in constructing high-field (>10 T) magnets. This article briefly reviews development of Nb3Sn superconductor and proposes prospects for further improvement. It is shown that significant improvement of critical current density (J c) is needed for future accelerator magnets. After a brief review of the development of Nb3Sn superconductors, the factors controlling J c are summarized and correlated with their microstructure and chemistry. The non-matrix J c of Nb3Sn conductors is mainly determined by three factors: the fraction of current-carrying Nb3Sn phase in the non-matrix area, the upper critical field B c2, and the flux line pinning capacity. Then prospects to improve the three factors are discussed respectively. An analytic model was developed to show how the ratios of precursors determine the phase fractions after heat treatment, based on which it is predicted that the limit of current-carrying Nb3Sn fraction in subelements is ∼65%. Then, since B c2 is largely determined by the Nb3Sn stoichiometry, a thermodynamic/kinetic theory is presented to show what essentially determines the Sn content of Nb3Sn conductors. This theory explains the influences of Sn sources and Ti addition on stoichiometry and growth rate of Nb3Sn layers. Next, to improve flux pinning, previous efforts in this community to introduce additional pinning centers to Nb3Sn wires are reviewed, and an internal oxidation technique is described. Finally, prospects for further improvement of non-matrix J c of Nb3Sn conductors are discussed, and it is seen that the only opportunity for further significantly improving J c lies in improving flux pinning.

  4. Cluster radioactivity leading to doubly magic 100Sn and 132Sn daughters

    Indian Academy of Sciences (India)

    K P Santhosh

    2011-03-01

    Decay of neutron-deficient 128−137Gd parents emitting 4He to 32S clusters are studied within the Coulomb and proximity potential model. The predicted half-lives are compared with other models and most of the values are well within the present experimental limit for measurements (1/2 < 1030} ). The lowest 1/2 value for 28Si emission from 128Gd indicates the role of doubly magic 100Sn daughter in cluster decay process. It is also found that neutron excess in the parent nuclei slows down the cluster decay process. Geiger–Nuttal plots for all clusters are found to be linear with different slopes and intercepts. The -decay half-lives of 148−152Gd parents are computed and are in agreement with experimental data. The role of doubly magic 132Sn daughter in cluster decay process is also examined for various neutron-rich Ba, Ce, Nd, Sm and Gd parents emitting clusters ranging from 4He to 32Si. Alpha-like structures are most probable in the decays leading to 100Sn, while non--like structures are probable in the decays leading to 132Sn. The neutron–proton asymmetry in parent and daughter nuclei is responsible for the reduced decay rate in the decay leading to 132Sn.

  5. SN 2000cx and SN 2013bh: Extremely Rare, Nearly Twin Type Ia Supernovae

    CERN Document Server

    Silverman, Jeffrey M; Kasliwal, Mansi M; Fox, Ori D; Cao, Yi; Johansson, Joel; Perley, Daniel A; Tal, David; Wheeler, J Craig; Amanullah, Rahman; Arcavi, Iair; Bloom, Joshua S; Gal-Yam, Avishay; Goobar, Ariel; Kulkarni, Shrinivas R; Laher, Russ; Lee, William H; Marion, G H; Nugent, Peter E; Shivvers, Isaac

    2013-01-01

    The Type Ia supernova (SN Ia) SN 2000cx was one of the most peculiar transients ever discovered. While its rise to maximum brightness was typical for a SN Ia, its decline was slower, causing standard light curve fitting algorithms to fail; its spectra indicated a high photospheric temperature. Thirteen years later SN 2013bh (aka iPTF13abc), the first near identical twin of SN 2000cx, was discovered. We obtained optical and near-IR photometry and low-resolution optical spectroscopy of this object from discovery until about 1 month past r-band maximum brightness. The spectra of both objects indicate the presence of iron-group elements (Co II, Ni II, Fe II, Fe III, and high-velocity features [HVFs] of Ti II), intermediate-mass elements (Si II, Si III, and S II), in addition to separate normal velocity features (~12000 km/s) and HVFs (~24000 km/s) of Ca II. Persistent absorption from Fe III and Si III, along with the colour evolution, imply relatively high blackbody temperatures for SNe 2013bh and 2000cx (~12000 ...

  6. 119Sn CEMS study of Sb doped SnO2 film

    Science.gov (United States)

    Nomura, K.; Kuzmann, E.; Garg, V. K.; de Oliveira, A. C.; Stichleutner, S.; Homonnay, Z.

    2016-12-01

    Sb doped SnO2 films prepared by DC sputtering and heating were characterized by 119Sn conversion electron Mössbauer spectrometry (CEMS). An asymmetric doublet was observed in the Mössbauer spectra of 1 %, 3 %, and 10 % Sb doped SnO2 films. The peak ratios of doublets are considered to be due to the columnar crystal growth on the substrate. With the doping level of Sb, both the isomer shift ( δ) and the quadrupole splitting (Δ) increased. After annealing, δ increased and Δ decreased for each sample. These results suggest the followings. The electron doping of the SnO2 lattice by pentavalent Sb induces the increase of the electron density at the SnIV nucleus. The annealing process leads to more complete accommodation of the Sb dopant that results in more effective electron doping and therefore increasing isomer shift for tin. Simultaneously, the distortion of the lattice caused by Sb is relaxed and the quadrupole splitting decreases.

  7. Representation of A15 composition and TC in internal-Sn Nb3Sn superconducting strands

    Institute of Scientific and Technical Information of China (English)

    Andre; SULPICE; Jean-Louis; SOUBEYROUX; Christophe; VERWAERDE; Gia; Ky; HOANG

    2010-01-01

    Four sets of mono-element (ME) and two kinds of multifilament (MF) internal-Sn Nb3Sn superconducting strands were designed and fabricated through RRP method in which different compoment ratios, various composite configurations and some third element alloying were arranged. All the strand samples underwent a 210°C/50 h + 340°C/25 h thermal duration for Cu-Sn alloying. After that A15 phase formation heat treatment (HT) was applied for which the ME samples were chosen at three reaction temperatures of 675°C, 700°C and 725°C for 100 h and 200 h while the MF samples at four temperatures of 650°C, 675°C, 700°C and 725°C for 128 h and 200 h. The heat-treated samples were examined for A15 phase composition distribution by X-ray EDS. SQUID magnetization measurement was used to determine critical temperature TC. The obtained results demonstrate that for fully-reacted internal-Sn Nb3Sn superconductors the A15 phase composition and the intrinsic property TC are determined by the diffusion and solid state reaction mechanism and are independent of the factors including HT temperature, strand composite component and configuration arrangement, and the third element addition within the experimental range.

  8. Constraining Modified Gravity with SN 1987A

    Science.gov (United States)

    Zukin, Phillip; Bertschinger, Edmund

    2009-05-01

    In the 1950's, Papapetrou found that extended bodies with spin, in general relativity, do not move along geodesics because of a spin-curvature coupling. Using an Eikonal approximation, we reproduce these results for Dirac and Majorana particles. We generalize these results to modified theories of gravity with a non-minimally coupled matter lagrangian and place constraints on the coupling field based on the arrival times of SN 1987A neutrinos.

  9. Linear polarimetric study of SN 1987A

    Science.gov (United States)

    Clocchiatti, A.; Mendez, M.; Benvenuto, O.; Feinstein, C.; Marraco, H.

    Linear polarization measurements of SN 1987A were made with 0.83-m and a 2.15-m telescopes. It is found that the polarization decreases with time (Benvenuto et al., 1987) Because the polarization produced by the interstellar matter is time independent and the wavelength dependence of the observed polarization is far from the interstellar relation (Serkowski et al., 1975) it is suggested that the time dependent characteristic is due to an intrinsic polarization vector.

  10. VERY LATE PHOTOMETRY OF SN 2011fe

    Energy Technology Data Exchange (ETDEWEB)

    Kerzendorf, W. E. [Department of Astronomy and Astrophysics, University of Toronto, 50 Saint George Street, Toronto, ON M5S 3H4 (Canada); Taubenberger, S.; Seitenzahl, I. R.; Ruiter, A. J., E-mail: wkerzendorf@gmail.com [Max-Planck-Institut für Astrophysik, Karl-Schwarzschild-Straße 1, D-85748 Garching (Germany)

    2014-12-01

    The Type Ia supernova SN 2011fe is one of the closest supernovae of the past decades. Due to its proximity and low dust extinction, this object provides a very rare opportunity to study the extremely late time evolution (>900 days) of thermonuclear supernovae. In this Letter, we present our photometric data of SN 2011fe taken at an unprecedented late epoch of ≈930 days with GMOS-N mounted on the Gemini North telescope (g = 23.43 ± 0.28, r = 24.14 ± 0.14, i = 23.91 ± 0.18, and z = 23.90 ± 0.17) to study the energy production and retention in the ejecta of SN 2011fe. Together with previous measurements by other groups, our result suggests that the optical supernova light curve can still be explained by the full thermalization of the decay positrons of {sup 56}Co. This is in spite of theoretical predicted effects (e.g., infrared catastrophe, positron escape, and dust) that advocate a substantial energy redistribution and/or loss via various processes that result in a more rapid dimming at these very late epochs.

  11. Proton-neutron correlations above 100Sn

    Science.gov (United States)

    Delion, Doru S.; Baran, Virgil V.

    2017-06-01

    Proton-neutron (pn) correlations in nuclei above the Z=50 shell closure are investigated in order to understand the peculiar behaviour of the 2+ and 4+ states in Te and Xe isotopes. It turns out that by increasing the pn pairing interaction, which becomes important for N ≈ Z nuclei, the collectivity decreases. We thus conclude that the ratio between the B(E2) value and 2+ energy is a "fingerprint" of pn collectivity. The available experimental data indeed indicate an enhanced pn pairing interaction by also approaching double magic Z=N=20 and Z=N=28 regions. It is known that the α-particle reduced width has the largest values in the region above 100Sn. In order to reproduce the reduced α-decay width we use an additional pocket-like surface potential in the single particle mean field, simulating four-body correlations. The strength of this interaction has a universal linear dependence on the experimental reduced width above the double magic nuclei 100Sn and 208Pb. Moreover, we demonstrate that pn pairing correlations have a small influence on this dependence and therefore cannot explain the larger reduced decay widths above 100Sn.

  12. Thermoelectric properties of SnSe compound

    Energy Technology Data Exchange (ETDEWEB)

    Guan, Xinhong [State Key Laboratory of Information Photonics and Optical Communications, Ministry of Education, Beijing University of Posts and Telecommunications, P.O. Box 72, Beijing 100876 (China); Lu, Pengfei, E-mail: photon@bupt.edu.cn [State Key Laboratory of Information Photonics and Optical Communications, Ministry of Education, Beijing University of Posts and Telecommunications, P.O. Box 72, Beijing 100876 (China); Wu, Liyuan; Han, Lihong [State Key Laboratory of Information Photonics and Optical Communications, Ministry of Education, Beijing University of Posts and Telecommunications, P.O. Box 72, Beijing 100876 (China); Liu, Gang [School of Electronic Engineering, Beijing University of Posts and Telecommunications, Beijing 100876 (China); Song, Yuxin [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China); Wang, Shumin [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China); Photonics Laboratory, Department of Microtechnology and Nanoscience, Chalmers University of Technology, 41296 Gothenburg (Sweden)

    2015-09-15

    Highlights: • The electronic and thermoelectric properties of SnSe bulk material are studied. • The ZT can reach as high as 1.87 along yy and 1.6 along zz direction at 800k. • SnSe is an indirect-band material, and SOC has little effect on the band structure. • The high ZT can be attributed to the intrinsically ultralow thermal conductivity. - Abstract: A first-principles study and Boltzmann transport theory have been performed to evaluate the electronic structure and thermoelectric properties of SnSe compound. The energy band structure and density of states are studied in detail. The electronic transport coefficients are then calculated as a function of chemical potential or temperature within the assumption of the constant relaxation time. The figure of merit ZT is obtained with the use of calculated thermoelectric properties and can reach as high as 1.87 along yy and 1.6 along zz direction at 800 K. Our theoretical result agrees well with previous experimental data.

  13. Very late photometry of SN 2011fe

    CERN Document Server

    Kerzendorf, W E; Seitenzahl, I R; Ruiter, A J

    2014-01-01

    The Type Ia supernova SN 2011fe is one of the closest supernovae of the past decades. Due to its proximity and low dust extinction, this object provides a very rare opportunity to study the extremely late time evolution (> 900 d) of thermonuclear supernovae. These late stages allow for a direct measurement of the decay processes of nuclei synthesized in the core of the explosion. In this paper, we present our photometric data of SN 2011fe taken at an unprecedentedly late epoch of ~ 930 d with GMOS-N mounted on the Gemini North telescope (g=23.37+/- 0.25, r=24.03 +/- 0.09, i=23.90 +/- 0.15, and z=23.74 +/- 0.16) to study the energy production and retention in the ejecta of SN 2011fe. Together with previous measurements by other groups, our result suggests that the optical supernova light curve can still be explained by the full thermalization of the decay positrons of 56Co. This is in spite of several theoretical predictions that advocate a substantial energy redistribution and/or loss via various processes wh...

  14. The Radio Evolution of SN 2001gd

    CERN Document Server

    Stockdale, Christopher J; Weiler, Kurt W; Panagia, Nino; Sramek, Richard A; Van Dyk, Schuyler D; Kelley, Matthew T

    2007-01-01

    We present the results of observations of the radio emission from Supernova 2001gd in NGC 5033 from 2002 February 8 through 2006 September 25. The data were obtained using the Very Large Array at wavelengths of 1.3 cm (22.4 GHz), 2 cm (14.9 GHz), 3.6 cm (8.4 GHz), 6 cm (4.9 GHz), and 20 cm (1.5 GHz), with one upper limit at 90 cm (0.3 GHz). In addition, one detection has been provided by the Giant Metrewave Radio Telescope at 21 cm (1.4 GHz). SN 2001gd was discovered in the optical well past maximum light, so that it was not possible to obtain many of the early radio "turn-on" measurements which are important for estimating the local circumstellar medium (CSM) properties. Only at 20 cm were turn-on data available. However, our analysis and fitting of the radio light curves, and the assumption that the Type IIb SN 2001gd resembles the much better studied Type IIb SN 1993J, enables us to describe the radio evolution as being very regular through day ~550 and consistent with a nonthermal-emitting model with a th...

  15. A facile inexpensive route for SnS thin film solar cells with SnS{sub 2} buffer

    Energy Technology Data Exchange (ETDEWEB)

    Gedi, Sreedevi [School of Chemical Engineering, Yeungnam University, 280Daehak-ro, Gyeongsan 712-749, Republic of Korea (Korea, Republic of); Solar Photovoltaic Laboratory, Department of Physics, Sri Venkateswasra University, Tirupati 517 502 (India); Minna Reddy, Vasudeva Reddy, E-mail: drmvasudr9@gmail.com [School of Chemical Engineering, Yeungnam University, 280Daehak-ro, Gyeongsan 712-749, Republic of Korea (Korea, Republic of); Solar Photovoltaic Laboratory, Department of Physics, Sri Venkateswasra University, Tirupati 517 502 (India); Pejjai, Babu [School of Chemical Engineering, Yeungnam University, 280Daehak-ro, Gyeongsan 712-749, Republic of Korea (Korea, Republic of); Solar Photovoltaic Laboratory, Department of Physics, Sri Venkateswasra University, Tirupati 517 502 (India); Jeon, Chan-Wook [School of Chemical Engineering, Yeungnam University, 280Daehak-ro, Gyeongsan 712-749, Republic of Korea (Korea, Republic of); Park, Chinho, E-mail: chpark@ynu.ac.kr [School of Chemical Engineering, Yeungnam University, 280Daehak-ro, Gyeongsan 712-749, Republic of Korea (Korea, Republic of); Ramakrishna Reddy, K.T., E-mail: ktrkreddy@gmail.com [Solar Photovoltaic Laboratory, Department of Physics, Sri Venkateswasra University, Tirupati 517 502 (India)

    2016-05-30

    Graphical abstract: PYS spectra of SnS/SnS{sub 2} interface and the related band diagram. - Highlights: • A low cost SnS solar cell is developed using chemical bath deposition. • We found E{sub I} & χ of SnS (5.3 eV & 4.0 eV) and SnS{sub 2} (6.9 eV & 4.1 eV) films from PYS. • Band offsets of 0.1 eV (E{sub c}) and 1.6 eV (E{sub v}) are estimated for SnS/SnS{sub 2} junction. • SnS based solar cell showed a conversion efficiency of 0.51%. - Abstract: Environment-friendly SnS based thin film solar cells with SnS{sub 2} as buffer layer were successfully fabricated from a facile inexpensive route, chemical bath deposition (CBD). Layer studies revealed that as-grown SnS and SnS{sub 2} films were polycrystalline; (1 1 1)/(0 0 1) peaks as the preferred orientation; 1.3 eV/2.8 eV as optical band gaps; and showed homogeneous microstructure with densely packed grains respectively. Ionization energy and electron affinity values were found by applying photoemission yield spectroscopy (PYS) to the CBD deposited SnS and SnS{sub 2} films for the first time. These values obtained as 5.3 eV and 4.0 eV for SnS films; 6.9 eV and 4.1 eV for SnS{sub 2} films. The band alignment of SnS/SnS{sub 2} junction showed TYPE-II heterostructure. The estimated conduction and valance band offsets were 0.1 eV and 1.6 eV respectively. The current density–voltage (J–V) measurements of the cell showed open circuit voltage (V{sub oc}) of 0.12 V, short circuit current density (J{sub sc}) of 10.87 mA cm{sup −2}, fill factor (FF) of 39% and conversion efficiency of 0.51%.

  16. Oxidation and reduction kinetics of eutectic SnPb, InSn, and AuSn: a knowledge base for fluxless solder bonding applications

    DEFF Research Database (Denmark)

    Kuhmann, Jochen Friedrich; Preuss, A.; Adolphi, B.;

    1998-01-01

    For microelectronics and especially for upcoming new packaging technologies in micromechanics and photonics fluxless, reliable and economic soldering technologies are needed. In this article, we consequently focus on the oxidation and reduction kinetics of three commonly used eutectic solder allo...... and reflowed AuSn(80/20) and SnPb(60/40) after the introduction of H2...

  17. Laser soldering of Sn-Ag-Cu and Sn-Zn-Bi lead-free solder pastes

    Science.gov (United States)

    Takahashi, Junichi; Nakahara, Sumio; Hisada, Shigeyoshi; Fujita, Takeyoshi

    2004-10-01

    It has reported that a waste of an electronics substrate including lead and its compound such as 63Sn-37Pb has polluted the environment with acid rain. For that environment problem the development of lead-free solder alloys has been promoted in order to find out the substitute for Sn-Pb solders in the United States, Europe, and Japan. In a present electronics industry, typical alloys have narrowed down to Sn-Ag-Cu and Sn-Zn lead-free solder. In this study, solderability of Pb-free solder that are Sn-Ag-Cu and Sn-Zn-Bi alloy was studied on soldering using YAG (yttrium aluminum garnet) laser and diode laser. Experiments were peformed in order to determine the range of soldering parameters for obtaining an appropriate wettability based on a visual inspection. Joining strength of surface mounting chip components soldered on PCB (printed circuit board) was tested on application thickness of solder paste (0.2, 0.3, and 0.4 mm). In addition, joining strength characteristics of eutectic Sn-Pb alloy and under different power density were examined. As a result, solderability of Sn-Ag-Cu (Pb-free) solder paste are equivalent to that of coventional Sn-Pb solder paste, and are superior to that of Sn-Zn-Bi solder paste in the laser soldering method.

  18. Ultrasonic spray pyrolysis deposition of SnSe and SnSe2 using a single spray solution

    Institute of Scientific and Technical Information of China (English)

    Jorge Sergio Narro-Rios; Manoj Ramachandran; Dalia Martínez-Escobar; Aarón Sánchez-Juárez

    2013-01-01

    Thin films of SnSe and SnSe2 have been deposited using the ultrasonic spray pyrolysis (USP) technique.To the best of our knowledge this is the first report of the deposition of SnSe and SnSe2 thin films using a single spray solution.The use of a single spray solution for obtaining both a p-type material,SnSe,and an n-type material,SnSe2,simplifies the deposition technique.The SnSe2 thin films have a bandgap of 1.1 eV and the SnSe thin films have a band gap of 0.9 eV.The Hall measurements were used to determine the resistivity of the thin films.The SnSe2 thin films show a resistivity of 36.73 Ω·cm and n-type conductivity while the SnSe thin films show a resistivity of 180 Ω·cm and p-type conductivity.

  19. Magnetization study of ITER-type internal-Sn Nb3Sn superconducting wire

    Institute of Scientific and Technical Information of China (English)

    Zhang Chao-Wu; Zhou Lian; Andre Sulpice; Jean-Louis Soubeyroux; Christophe Verwaerde; Gia Ky Hoang; Zhang Ping-Xiang; Lu Ya-Feng; Tang Xian-De

    2007-01-01

    Through magnetization measurement with a SQUID magnetometer the heat treatment optimization of an international thermonuclear experimental reactor (ITER)-type internal-Sn Nb3Sn superconducting wire has been investigated. The irreversibility temperature T*(H), which is mainly dependent on A15 phase composition, was obtained by a warming and cooling cycle at a fixed field. The hysteresis width △M(H) which reflects the flux pinning situation of the A15 phase is determined by the sweeping of magnetic field at a constant temperature. The results obtained from differently heat-treated samples show that the combination of T*(H) with △M(H) measurement is very effective for optimizing the heat reaction process. The heat treatment condition of the ITER-type wire is optimized at 675 ℃/128 h, which results in a composition closer to stoichiometric Nb3Sn and a state with best flux pinning.

  20. Intermediate-energy Coulomb excitation of 104Sn: Moderate E2 strength decrease approaching 100Sn

    CERN Document Server

    Doornenbal, P; Aoi, N; Matsushita, M; Obertelli, A; Steppenbeck, D; Wang, H; Audirac, L; Baba, H; Bednarczyk, P; Boissinot, S; Ciemala, M; Corsi, A; Furumoto, T; Isobe, T; Jungclaus, A; Lapoux, V; Lee, J; Matsui, K; Motobayashi, T; Nishimura, D; Ota, S; Pollacco, E C; Sakurai, H; Santamaria, C; Shiga, Y; Sohler, D; Taniuchi, R

    2013-01-01

    The reduced transition probability B(E2) of the first excited 2+ state in the nucleus 104Sn was measured via Coulomb excitation in inverse kinematics at intermediate energies. A value of 0.163(26) e^2b^2 was extracted from the absolute cross-section on a Pb target, while the method itself was verified with the stable 112Sn isotope. Our result deviates significantly from the earlier reported value of 0.10(4) e^2b^2 and corresponds to a moderate decrease of excitation strength relative to the almost constant values observed in the proton-rich, even-A 106-114Sn isotopes. Present state-of-the-art shell-model predictions, which include proton and neutron excitations across the N=Z=50 shell closures as well as standard polarization charges, underestimate the experimental findings

  1. Parametrized dielectric functions of amorphous GeSn alloys

    Science.gov (United States)

    D'Costa, Vijay Richard; Wang, Wei; Schmidt, Daniel; Yeo, Yee-Chia

    2015-09-01

    We obtained the complex dielectric function of amorphous Ge1-xSnx (0 ≤ x ≤ 0.07) alloys using spectroscopic ellipsometry from 0.4 to 4.5 eV. Amorphous GeSn films were formed by room-temperature implantation of phosphorus into crystalline GeSn alloys grown by molecular beam epitaxy. The optical response of amorphous GeSn alloys is similar to amorphous Ge and can be parametrized using a Kramers-Kronig consistent Cody-Lorentz dispersion model. The parametric model was extended to account for the dielectric functions of amorphous Ge0.75Sn0.25 and Ge0.50Sn0.50 alloys from literature. The compositional dependence of band gap energy Eg and parameters associated with the Lorentzian oscillator have been determined. The behavior of these parameters with varying x can be understood in terms of the alloying effect of Sn on Ge.

  2. Ordered CoSn-type ternary phases in Co3Sn3-xGex

    DEFF Research Database (Denmark)

    Allred, Jared M.; Jia, Shuang; Bremholm, Martin;

    2012-01-01

    CoSn is the prototype compound of the B35 structure, which has long been of interest due to its rarity and unusually low packing density. We report the synthesis and properties of the solid solution Co3Sn3-xGex for 0 ⩽ x ⩽ 2, in order to clarify the conditions necessary to stabilize such a phase...... some ambiguities about the stabilizing forces in this crystal structure. All compounds are normal metals with room temperature conductivities ranging from 5 to 50 μΩ cm and are weakly paramagnetic....

  3. Bulk and surface properties of demixing liquid Al-Sn and Sn-Tl alloys

    Science.gov (United States)

    Odusote, Y. A.; Popoola, A. I.; Oluyamo, S. S.

    2016-02-01

    The energetics of mixing in Al-Sn and Sn-Tl-segregating binary alloys has been explained through the study of surface properties (surface concentrations and surface tension) and various concentration-dependent thermodynamic (free energy of mixing, entropy of mixing and enthalpy of mixing) and transport (chemical diffusion) properties as well as the microscopic functions (concentration fluctuations in the long-wavelength limits and chemical short-range order parameter) using a statistical mechanical theory in conjunction with the self-association model (SAM). The theoretical property values obtained by the SAM were compared to the corresponding experimental values available in literature.

  4. MERLIN radio observations of two recent supernovae in Arp299: SN2010O & SN2010P

    Science.gov (United States)

    Beswick, R. J.; Perez-Torres, M. A.; Mattila, S.; Garrington, S. T.; Kankare, E.; Ryder, S.; Alberdi, A.; Romero-Canizales, C.

    2010-02-01

    We report MERLIN radio observations of the two recent supernovae in Arp299; SN2010P and SN2010O (CBET #2145 and CBET #2144, respectively). Observations of Arp299 were made between 1900UT 29th Jan 2010 and 0150UT 1st Feb 2010 at 4994MHz. The previously known compact radio structure of Arp299, including the nuclear starburst components associated with A=IC694 and B1=the southernmost nucleus of NGC3690 are detected (Neff, Ulvestad & Teng 2004, ApJ, 611, 186; Ulvestad 2009 AJ, 138, 152; Perez-Torres et al 2009, A&A 507, 17).

  5. Structural properties and hyperfine characterization of Sn-substituted goethites

    Energy Technology Data Exchange (ETDEWEB)

    Larralde, A.L. [INQUIMAE, Departamento de Quimica Inorganica, Analitica y Quimica Fisica, Facultad de Ciencias Exactas y Naturales, Universidad de Buenos Aires (Argentina); Ramos, C.P. [Departamento de Fisica de la Materia Condensada, GIyA - CAC - CNEA, Av. Gral. Paz 1499 (1650), San Martin, Bs. As. (Argentina); Arcondo, B. [Departamento de Fisica, Facultad de Ingenieria, Universidad de Buenos Aires, Av. Paseo Colon 850 (C1063ACV), Bs. As. (Argentina); Tufo, A.E. [INQUIMAE, Departamento de Quimica Inorganica, Analitica y Quimica Fisica, Facultad de Ciencias Exactas y Naturales, Universidad de Buenos Aires (Argentina); Saragovi, C. [Departamento de Fisica de la Materia Condensada, GIyA - CAC - CNEA, Av. Gral. Paz 1499 (1650), San Martin, Bs. As. (Argentina); Sileo, E.E., E-mail: sileo@qi.fcen.uba.ar [INQUIMAE, Departamento de Quimica Inorganica, Analitica y Quimica Fisica, Facultad de Ciencias Exactas y Naturales, Universidad de Buenos Aires (Argentina)

    2012-04-16

    Highlights: Black-Right-Pointing-Pointer Pure and tin-doped goethites were synthesized from Sn(II) solutions at ambient pressure and 70 Degree-Sign C. Black-Right-Pointing-Pointer The Rietveld refinement of PXRD data indicated that Sn partially substituted the Fe(III) ions. Black-Right-Pointing-Pointer The substitution provoked unit cell expansion, and a distortion of the coordination polyhedron. Black-Right-Pointing-Pointer {sup 119}Sn Moessbauer spectroscopy revealed that Sn(II) is incorporated as Sn(IV). Black-Right-Pointing-Pointer {sup 57}Fe Moessbauer spectroscopy showed a lower magnetic coupling as tin concentration increased. - Abstract: Tin-doped goethites obtained by a simple method at ambient pressure and 70 Degree-Sign C were characterized by inductively coupled plasma atomic emission spectrometry, scanning electron microscopy, Rietveld refinement of powder X-ray diffraction data, and {sup 57}Fe and {sup 119}Sn Moessbauer spectroscopy. The particles size and the length to width ratios decreased with tin-doping. Sn partially substituted the Fe(III) ions provoking unit cell expansion and increasing the crystallinity of the particles with enlarged domains that grow in the perpendicular and parallel directions to the anisotropic broadening (1 1 1) axis. Intermetallic E, E Prime and DC distances also change although the variations are not monotonous, indicating different variations in the coordination polyhedron. In general, the Sn-substituted samples present larger intermetallic distances than pure goethite, and the greatest change is shown in the E Prime distance which coincides with the c-parameter. {sup 119}Sn Moessbauer spectroscopy revealed that Sn(II) is incorporated as Sn(IV) in the samples. On the other hand, Fe(II) presence was not detected by {sup 57}Fe Moessbauer spectroscopy, suggesting the existence of vacancies in the Sn-doped samples. A lower magnetic coupling is also evidenced from the average magnetic hyperfine field values obtained as tin

  6. Real-time study of electromigration in Sn Blech structure

    Science.gov (United States)

    Ho, C. E.; Hsieh, W. Z.; Yang, C. H.; Lee, P. T.

    2016-12-01

    Electromigration has become a critical issue for reliability in Sn-based conducting materials that are used in advanced microelectronic packages with micro-joint integration. In this study, a Blech structure was used to characterize the Sn electromigration behavior of various strip lengths (L0 = 10-100 μm). We established a mathematical model based on the fundamental electromigration theory to describe the correlation between the residual strip length (L) and the current stressing time (t). A three-stage mechanism was proposed to rationalize the Sn electromigration in the Blech structure. A good agreement between the mathematical model and experimental data was obtained, advancing our understanding of Sn electromigration.

  7. GeSn/Ge multiquantum well photodetectors on Si substrates.

    Science.gov (United States)

    Oehme, M; Widmann, D; Kostecki, K; Zaumseil, P; Schwartz, B; Gollhofer, M; Koerner, R; Bechler, S; Kittler, M; Kasper, E; Schulze, J

    2014-08-15

    Vertical incidence GeSn/Ge multiquantum well (MQW) pin photodetectors on Si substrates were fabricated with a Sn concentration of 7%. The epitaxial structure was grown with a special low temperature molecular beam epitaxy process. The Ge barrier in the GeSn/Ge MQW was kept constant at 10 nm. The well width was varied between 6 and 12 nm. The GeSn/Ge MQW structures were grown pseudomorphically with the in-plane lattice constant of the Ge virtual substrate. The absorption edge shifts to longer wavelengths with thicker QWs in agreement with expectations from smaller quantization energies for the thicker QWs.

  8. The high-temperature modification of LuAgSn and high-pressure high-temperature experiments on DyAgSn, HoAgSn, and YbAgSn

    Energy Technology Data Exchange (ETDEWEB)

    Heying, B.; Rodewald, U.C.; Hermes, W.; Schappacher, F.M.; Riecken, J.F.; Poettgen, R. [Muenster Univ. (Germany). Inst. fuer Anorganische und Analytische Chemie; Heymann, G.; Huppertz, H. [Muenchen Univ. (Germany). Dept. fuer Chemie und Biochemie; Sebastian, C.P. [Max-Planck-Institut fuer Chemische Physik Fester Stoffe, Dresden (Germany)

    2008-02-15

    The high-temperature modification of LuAgSn was obtained by arc-melting an equiatomic mixture of the elements followed by quenching the melt on a water-cooled copper crucible. HT-LuAgSn crystallizes with the NdPtSb-type structure, space group P6{sub 3}mc: a = 463.5(1), c = 723.2(1) pm, wR2 = 0.0270, 151 F{sup 2}, and 11 variables. The silver and tin atoms build up two-dimensional, puckered [Ag{sub 3}Sn{sub 3}] networks (276 pm Ag-Sn) that are charge-balanced and separated by the lutetium atoms. The Ag-Sn distances between the [Ag{sub 3}Sn{sub 3}] layers of 294 pm are much longer. Single crystals of isotypic DyAgSn (a = 468.3(1), c = 734.4(1) pm, wR2 = 0.0343, 411 F{sup 2}, and 11 variables) and HoAgSn (a = 467.2(1), c = 731.7(2) pm, wR2 = 0.0318, 330 F{sup 2}, and 11 variables) were obtained from arc-melted samples. Under high-pressure (up to 12.2 GPa) and high-temperature (up to 1470 K) conditions, no transitions to a ZrNiAl-related phase have been observed for DyAgSn, HoAgSn, and YbAgSn. HT-TmAgSn shows Curie-Weiss paramagnetism with {mu}{sub eff} = 7.53(1) {mu}{sub B}/Tm atom and {theta}P = -15.0(5) K. No magnetic ordering was evident down to 3 K. HT-LuAgSn is a Pauli paramagnet. Room-temperature {sup 119}Sn Moessbauer spectra of HT-TmAgSn and HT-LuAgSn show singlet resonances with isomer shifts of 1.78(1) and 1.72(1) mm/s, respectively. (orig.)

  9. Cajal bodies and snRNPs - friends with benefits.

    Science.gov (United States)

    Staněk, David

    2016-09-14

    Spliceosomal snRNPs are complex particles that proceed through a fascinating maturation pathway. Several steps of this pathway are closely linked to nuclear non-membrane structures called Cajal bodies. In this review, I summarize the last 20 y of research in this field. I primarily focus on snRNP biogenesis, specifically on the steps that involve Cajal bodies. I also evaluate the contribution of the Cajal body in snRNP quality control and discuss the role of snRNPs in Cajal body formation.

  10. Elastic anisotropy in multifilament Nb$_3$Sn superconducting wires

    CERN Document Server

    Scheuerlein, C; Alknes, P; Arnau, G; Bjoerstad, R; Bordini, B

    2015-01-01

    The elastic anisotropy caused by the texture in the Nb3Sn filaments of PIT and RRP wires has been calculated by averaging the estimates of Voigt and Reuss, using published Nb3Sn single crystal elastic constants and the Nb3Sn grain orientation distribution determined in both wire types by Electron Backscatter Diffraction. At ambient temperature the calculated Nb3Sn E-moduli in axial direction in the PIT and the RRP wire are 130 GPa and 140 GPa, respectively. The calculated E-moduli are compared with tensile test results obtained for the corresponding wires and extracted filament bundles.

  11. Effect of pressure on the Curie temperature of Mn2RuSn and Mn2PdSn

    Science.gov (United States)

    Adachi, Y.; Watanabe, T.; Kanomata, T.; Hayasaka, M.; Endo, K.; Nishihara, H.; Xu, X.; Kainuma, R.

    2017-04-01

    Effect of pressure on the Curie temperature TC of the Mn-rich Heusler alloys Mn2RuSn and Mn2PdSn has been investigated by measuring the temperature dependence of initial permeability at various pressures up to 10 kbar. It was found that the Curie temperatures of Mn2RuSn and Mn2PdSn decrease with increasing pressure. The pressure derivatives of TC were estimated to be -0.59 K/kbar for Mn2RuSn and -0.80 K/kbar for Mn2PdSn. On the basis of the experimental results, the relationship between the magnetic transition temperature and the Mn-Mn distance is discussed.

  12. The attack initiation of Al-Zn-In-Sn anode by the segregation concentrating Zn,Sn and In

    Energy Technology Data Exchange (ETDEWEB)

    Qi, G.T.; Qiu, Y.B.; Cai, Q.Z. [Department of Chemistry and Chemical Engineering, Huazhong University of Science and Technology, Wuhan (China); Zhao, Y.N. [Department of Biological and Chemical Engineering, Nanyang Institute of Technology, Nanyang (China)

    2009-03-15

    The microstructure of Al-5%Zn-0.025%In-0.15%Sn anode was investigated by EPMA, and EDAX. The result showed that the microstructure at the Al-Zn-In-Sn anode can be categorized into two different types, namely the catenulate segregation enriched in Zn, Fe, Si, and the elliptical or rounded segregation where Zn, Sn, In concentrated. In order to explain the initial dissolution of the aluminum anode, the electrochemical behavior in 3% NaCl solution of the Al-Zn-In-Sn anode and its simulated segregation concentrating Zn, Sn, In were tested using potentiodynamic polarization and electrochemical impedance spectroscopy. The result showed that the simulated segregation concentrating Zn,Sn, In would preferentially be dissolved into the solution as the anode of galvanic cell. (Abstract Copyright [2009], Wiley Periodicals, Inc.)

  13. Effect of Pt:Sn atomic ratio on the preparation of PtSn/C electrocatalysts using electron beam irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Silva, Dionisio F.; Oliveira Neto, Almir; Pino, Eddy S.; Linardi, Marcelo; Spinace, Estevam V., E-mail: dfsilva@ipen.b, E-mail: espinace@ipen.b [Instituto de Pesquisas Energeticas e Nucleares (IPEN/CNEN-SP), Sao Paulo, SP (Brazil)

    2009-07-01

    PtSn/C electrocatalysts were prepared with Pt:Sn atomic ratios of 3:1, 1:1 and 1:3 in water/2-propanol using electron beam irradiation. The obtained materials were characterized by EDX, XRD and cyclic voltammetry. The ethanol electro-oxidation was studied by chronoamperometry. The XRD diffractograms of the PtSn/C electrocatalysts showed typical face-centered cubic (fcc) structure of platinum and the presence of a SnO{sub 2} phase (cassiterite). The mean crystallite sizes of Pt fcc phase was in the range of 3.0-3.5 nm. The PtSn/C electrocatalysts were active for ethanol electro-oxidation at room temperature and the material prepared with Pt:Sn atomic ratio of 1:1 showed the best activity. (author)

  14. Interfacial Reactions in the Ni/Sn- xZn/Cu Sandwich Couples

    Science.gov (United States)

    Yen, Yee-Wen; Lin, Chung-Yung; Lai, Mei-Ting; Chen, Wan-Ching

    2016-01-01

    The interfacial reactions in Ni/Sn- xZn/Cu sandwich couples which were reflowed at 270°C for 1 h and then aged at 160°C for 1-1000 h were investigated. When the 1000- μm-thick Sn-Zn alloy reacted with Ni and Cu in this couple, the results indicated that the (Ni, Cu)3Sn4, (Ni, Cu)5Zn21, and Ni5Zn21 phases were formed at Sn-1Zn/Ni, Sn-5Zn/Ni, and Sn-9Zn/Ni interfaces for 1 h reflowing, respectively. After 1000 h aging, each intermetallic compound (IMC) was converted to (Cu, Ni, Zn)6Sn5, (Ni, Cu, Sn)5Zn21/Ni5Zn21, and Ni5Zn21 (two layers) phases in the related couples. On the Cu side, the Cu6Sn5 phase in the Sn-1Zn/Cu interface and the Cu5Zn8 phase in the Sn-5Zn/Cu and Sn-9Zn/Cu interfaces were observed when the couple was reflowed at 270°C for 1 h. After 100 h aging, the (Cu, Ni, Zn)6Sn5, Cu5Zn8/(Cu, Zn)6Sn5, and Cu5Zn8 phases were formed at the Sn-1Zn/Cu, Sn-5Zn/Cu and Sn-9Zn/Cu interfaces. When the Sn-Zn alloy thickness was decreased to 500 μm, the (Cu, Ni, Zn)6Sn5 phase at the Sn-1Zn/Ni interface and the (Ni, Cu, Sn)5Zn21 phase at the Sn-5Zn/Ni and Sn-9Zn/Ni interfaces were observed after 1 h reflowing. When the couple was aged at 160°C for 1000 h, each IMC was converted to (Cu, Ni, Zn)6Sn5 and Cu5Zn8/(Cu, Ni, Sn)Zn/Ni5Zn21 phases at the Sn-1Zn/Ni and Sn-(5, 9)Zn/Ni interfaces. (Cu, Ni, Zn)6Sn5 and Cu5Zn8 were, respectively, formed at the Sn-1Zn/Cu and Sn-(5, 9)Zn/Cu interfaces for 1 h reflowing. After 100 h aging, the IMCs were converted to (Cu, Ni, Zn)6Sn5 and Cu5Zn8/(Cu, Zn)6Sn5 phases. This current study reveals that the IMC formation in Ni/(Sn- xZn)/Cu sandwich couples are very sensitive to the Zn concentration and thickness in Sn- xZn alloys.

  15. Influence of Sn concentration on the physical properties of CdO:Sn thin films deposited by spray pyrolysis

    Energy Technology Data Exchange (ETDEWEB)

    Vigil-Galan, O.; Ruiz, C.M. [Departamento de Fisica de Materiales, Universidad Autonoma de Madrid, 28049 Madrid (Spain); Sanchez-Gonzalez, Y. [EMPROTEL, Copextel, Carretera Prensa Latina km 111/2, Marianao, La Habana (Cuba); Arias-Carbajal, A. [Facultad de Quimica-IMRE, Universidad de La Habana, 10400 La Habana (Cuba); Contreras-Puente, G.; Tufino-Velazquez, M. [Escuela Superior de Fisica y Matematicas, Instituto Politecnico Nacional, 07738 Mexico, D.F. (Mexico)

    2006-12-15

    Sn doped cadmium oxide thin films were prepared on glass substrates by the spray pyrolysis (SP) method from a cadmium acetate aqueous solution. The Sn (IV) concentration in the solution was varied up to 2 wt%, keeping constant the other growth parameters. The structural, electrical and optical properties of the films were studied as a function of Sn concentration. The best results were obtained for CdO films doped with 1% Sn nominal concentration. The properties of these films are influenced by the air annealing performed at 450 C for 30-120 min. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  16. Simultaneous polarization monitoring of SN2007uy and the axisymmetric SN2008D/XRF080109: isolating geometry from dust

    CERN Document Server

    Gorosabel, J; Castro-Tirado, A J; Agudo, I; Jelinek, M; Leon, S; Augusteijn, T; Fynbo, J P U; Hjorth, J; Michalowski, M J; Xu, D; Ferrero, P; Kann, D A; Klose, S; Rossi, A; Madrid, J P; LLorente, A; Bremer, M; Winters, J -M

    2008-01-01

    We report the results of an optical linear polarization monitoring carried out simultaneously for SN2007uy and SN2008D. The observations span 74.9 days, starting 3.6 days after the X-ray outburst of SN2008D and are distributed in 11 visits. For both SNe the polarization is dominated by the host galaxy interstellar polarization (HGIP), especially for SN2007uy. This fact is supported by 1.2 millimeter (mm) observations of NGC2770, carried out at and around the SN2008D position. The 1.2 mm data are consistent with no intrinsic emission from SN2008D and can be entirely explained by the NGC2770 dust emission. Comparing spectroscopic extinction values reported in the literature with the extinction derived from the 1.2 mm data, we conclude that the NGC2770 extinction distribution is heterogeneous. We report also a 3.3 mm flux detection at the SN2008D position, possibly due to the intrinsic SN emission, and not due to the dust. Despite the dominant HGIP, a statistical analysis of the distribution of the SN2008D Stoke...

  17. Temperature varying photoconductivity of GeSn alloys grown by chemical vapor deposition with Sn concentrations from 4% to 11%

    Science.gov (United States)

    Hart, John; Adam, Thomas; Kim, Yihwan; Huang, Yi-Chiau; Reznicek, Alexander; Hazbun, Ramsey; Gupta, Jay; Kolodzey, James

    2016-03-01

    Pseudomorphic GeSn layers with Sn atomic percentages between 4.5% and 11.3% were grown by chemical vapor deposition using digermane and SnCl4 precursors on Ge virtual substrates grown on Si. The layers were characterized by x-ray diffraction rocking curves and reciprocal space maps. Photoconductive devices were fabricated, and the dark current was found to increase with Sn concentration. The responsivity of the photoconductors was measured at a wavelength of 1.55 μm using calibrated laser illumination at room temperature and a maximum value of 2.7 mA/W was measured for a 4.5% Sn device. Moreover, the responsivity for higher Sn concentration was found to increase with decreasing temperature. Spectral photoconductivity was measured using Fourier transform infrared spectroscopy. The photoconductive absorption edge continually increased in wavelength with increasing tin percentage, out to approximately 2.4 μm for an 11.3% Sn device. The direct band gap was extracted using Tauc plots and was fit to a bandgap model accounting for layer strain and Sn concentration. This direct bandgap was attributed to absorption from the heavy-hole band to the conduction band. Higher energy absorption was also observed, which was thought to be likely from absorption in the light-hole band. The band gaps for these alloys were plotted as a function of temperature. These experiments show the promise of GeSn alloys for CMOS compatible short wave infrared detectors.

  18. Electrochemical properties of Ti-Ni-Sn materials predicted by {sup 119}Sn Mössbauer spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Ladam, A., E-mail: alix.ladam@univ-montp2.fr; Aldon, L.; Lippens, P.-E.; Olivier-Fourcade, J.; Jumas, J.-C. [Université de Montpellier, Institut Charles Gerhardt, UMR 5253 CNRS (France); Cenac-Morthe, C. [CNES, Service DCT/TV/El (France)

    2016-12-15

    The electrochemical activity of TiNiSn, TiNi {sub 2}Sn and Ti {sub 6}Sn {sub 5} compounds considered as negative electrode materials for Li-ion batteries has been predicted from the isomer shift- Hume-Rothery electronic density correlation diagram. The ternary compounds were obtained from solid-state reactions and Ti {sub 6}Sn {sub 5} by ball milling. The {sup 119}Sn Mössbauer parameters were experimentally determined and used to evaluate the Hume-Rothery electronic density [e {sub av}]. The values of [e {sub av}] are in the region of Li-rich Li-Sn alloys for Ti {sub 6}Sn {sub 5} and outside this region for the ternary compounds, suggesting that the former compound is electrochemically active but not the two latter ones. Electrochemical tests were performed for these different materials confirming this prediction. The close values of [e {sub av}] for Ti {sub 6}Sn {sub 5} and Li-rich Li-Sn alloys indicate that the observed good capacity retention could be related to small changes in the global structures during cycling.

  19. Creep and Mechanical Properties of Cu6Sn5 and (Cu,Ni)6Sn5 at Elevated Temperatures

    Science.gov (United States)

    Mu, Dekui; Huang, Han; McDonald, Stuart D.; Nogita, Kazuhiro

    2013-02-01

    Cu6Sn5 is the most common and important intermetallic compound (IMC) formed between Sn-based solders and Cu substrates during soldering. The Cu6Sn5 IMC exhibits significantly different thermomechanical properties from the solder alloys and the substrate. The progress of high-density three-dimensional (3D) electrical packaging technologies has led to increased operating temperatures, and interfacial Cu6Sn5 accounts for a larger volume fraction of the fine-pitch solder joints in these packages. Knowledge of creep and the mechanical behavior of Cu6Sn5 at elevated temperatures is therefore essential to understanding the deformation of a lead-free solder joint in service. In this work, the effects of temperature and Ni solubility on creep and mechanical properties of Cu6Sn5 were investigated using energy-dispersive x-ray spectroscopy and nanoindentation. The reduced modulus and hardness of Cu6Sn5 were found to decrease as temperature increased from 25°C to 150°C. The addition of Ni increased the reduced modulus and hardness of Cu6Sn5 and had different effects on the creep of Cu6Sn5 at room and elevated temperatures.

  20. Wettability of Sn-Zn, Sn-Ag-Cu and Sn-Bi-Cu Lead-free Solder Alloys with Copper Substrate%Sn-Zn,Sn-Ag-Cu和Sn-Bi-Cu无铅焊锡合金与铜的润湿性

    Institute of Scientific and Technical Information of China (English)

    张晓瑞; 汪春雷; 赵宏欣; 李建强; 袁章福

    2009-01-01

    采用静滴法对Sn-Zn,Sn-Ag-Cu Sn-Bi-Cu锡基合金在铜基板上的润湿性进行了研究.结果表明,Sn-Bi-Cu合金的润湿性良好,Sn-30Bi-0.5Cu合金在530 K时的接触角为26°,熔融的Sn-3Ag-0.5Cu共晶合金的接触角几乎不存在滞后性.锡基合金中添加Bi元素可提高合金的润湿性,添加Cu元素可有效防止溶铜发生.研究结果为无铅焊锡合金的应用提供了一定的理论依据.

  1. 'Pd20Sn13' revisited: crystal structure of Pd6.69Sn4.31.

    Science.gov (United States)

    Klein, Wilhelm; Jin, Hanpeng; Hlukhyy, Viktor; Fässler, Thomas F

    2015-07-01

    The crystal structure of the title compound was previously reported with composition 'Pd20Sn13' [Sarah et al. (1981 ▸). Z. Metallkd, 72, 517-520]. For the original structure model, as determined from powder X-ray data, atomic coordinates from the isostructural compound Ni13Ga3Ge6 were transferred. The present structure determination, resulting in a composition Pd6.69Sn4.31, is based on single crystal X-ray data and includes anisotropic displacement parameters for all atoms as well as standard uncertainties for the atomic coordinates, leading to higher precision and accuracy for the structure model. Single crystals of the title compound were obtained via a solid-state reaction route, starting from the elements. The crystal structure can be derived from the AlB2 type of structure after removing one eighth of the atoms at the boron positions and shifting adjacent atoms in the same layer in the direction of the voids. One atomic site is partially occupied by both elements with a Pd:Sn ratio of 0.38 (3):0.62 (3). One Sn and three Pd atoms are located on special positions with site symmetry 2. (Wyckoff letter 3a and 3b).

  2. `Pd20Sn13' revisited: crystal structure of Pd6.69Sn4.31

    Directory of Open Access Journals (Sweden)

    Wilhelm Klein

    2015-07-01

    Full Text Available The crystal structure of the title compound was previously reported with composition `Pd20Sn13' [Sarah et al. (1981. Z. Metallkd, 72, 517–520]. For the original structure model, as determined from powder X-ray data, atomic coordinates from the isostructural compound Ni13Ga3Ge6 were transferred. The present structure determination, resulting in a composition Pd6.69Sn4.31, is based on single crystal X-ray data and includes anisotropic displacement parameters for all atoms as well as standard uncertainties for the atomic coordinates, leading to higher precision and accuracy for the structure model. Single crystals of the title compound were obtained via a solid-state reaction route, starting from the elements. The crystal structure can be derived from the AlB2 type of structure after removing one eighth of the atoms at the boron positions and shifting adjacent atoms in the same layer in the direction of the voids. One atomic site is partially occupied by both elements with a Pd:Sn ratio of 0.38 (3:0.62 (3. One Sn and three Pd atoms are located on special positions with site symmetry 2. (Wyckoff letter 3a and 3b.

  3. Thermodynamic understanding of Sn whisker growth on the Cu surface in Cu(top)-Sn(bottom) bilayer system upon room temperature aging

    Energy Technology Data Exchange (ETDEWEB)

    Huang, Lin; Jian, Wei; Lin, Bing; Wang, Jiangyong, E-mail: wangjy@stu.edu.cn [Department of Physics, Shantou University, 243 Daxue Road, Shantou, 515063 Guangdong (China); Wen, Yuren [School of Materials Science and Engineering, Nanchang University, Nanchang, 330031 Jiangxi (China); Institute of Physics, Chinese Academy of Sciences, 100190 Beijing (China); Gu, Lin [Institute of Physics, Chinese Academy of Sciences, 100190 Beijing (China)

    2015-06-07

    Sn whiskers are observed by scanning electron microscope on the Cu surface in Cu(top)-Sn(bottom) bilayer system upon room temperature aging. Only Cu{sub 6}Sn{sub 5} phase appears in the X-ray diffraction patterns and no Sn element is detected in the Cu sublayer by scanning transmission electron microscopy. Based on the interfacial thermodynamics, the intermetallic Cu{sub 6}Sn{sub 5} compound phase may form directly at the Sn grain boundary. Driven by the stress gradient during the formation of Cu{sub 6}Sn{sub 5} compound at Sn grain boundaries, Sn atoms segregate onto the Cu surface and accumulate to form Sn whisker.

  4. Swift Observations of SN 2007aa

    Science.gov (United States)

    Immler, S.; Brown, P. J.; Milne, P.

    2007-03-01

    Swift Ultraviolet/Optical Telescope (UVOT) and X-Ray Telescope (XRT) observed the type II SN 2007aa (CBET #850, IAUC #8814) on 2007-02-24.63 UT. The following UVOT magnitudes were measured: V = 15.8 (322 s exposure time), B = 16.4 (367 s), U = 16.9 (367 s), UVW1 [181-321nm] = 18.6 (737 s), UVM2 [166-268 nm] > 19.5 (3-sigma upper limit; 236 s), and UVW2 [112-264 nm] = 19.7 (725 s). The magnitudes have not been corrected for extinction.

  5. Spectroscopic observation of 5 SN candidates

    Science.gov (United States)

    Elias-Rosa, N.; Pursimo, T.; Korhonen, H.; Pastorello, A.; Derlopa, the NEON school PhD students S.; Marian, V.; Scognamiglio, D.; Szigeti, L.; Cabezas, M.; Fernandes, C. S.; McWhirter, P. R.; Zervas, K.

    2017-09-01

    We report the spectroscopic classification of SNe 2017gla, 2017glz, 2017gop, and 2017gqq, and the verification of SN2017gmr. The targets were supplied by the following surveys: ATLAS survey, see Tonry et al. (2011, PASP, 123, 58) and Tonry et al. (ATel #8680); Pan-STARRS Survey for Transients (Chambers et al. 2016, arXiv:1612.05560, and http://pswww.ifa.hawaii.edu ), the PMO-Tsinghua Supernova Survey (PTSS, http://www.cneost.org/ptss/ ); and the D The observations were performed with the 2.56 m Nordic Optical Telescope equipped with ALFOSC (range 350-950 nm; resolution 1.4 nm FWHM).

  6. Electronic topological transition in LaSn3 under pressure

    DEFF Research Database (Denmark)

    Ram, Swetarekha; Kanchana, V.; Vaitheeswaran, G.

    2012-01-01

    The electronic structure, Fermi surface, and elastic properties of the isostructural and isoelectronic LaSn3 and YSn3 intermetallic compounds are studied under pressure within the framework of density functional theory including spin-orbit coupling. The LaSn3 Fermi surface consists of two sheets...

  7. Microstructural evolution of eutectic Au-Sn solder joints

    Energy Technology Data Exchange (ETDEWEB)

    Song, Ho Geon

    2002-05-31

    Current trends toward miniaturization and the use of lead(Pb)-free solder in electronic packaging present new problems in the reliability of solder joints. This study was performed in order to understand the microstructure and microstructural evolution of small volumes of nominally eutectic Au-Sn solder joints (80Au-20Sn by weight), which gives insight into properties and reliability.

  8. Microstructural evolution of eutectic Au-Sn solder joints

    Energy Technology Data Exchange (ETDEWEB)

    Song, Ho Geon [Univ. of California, Berkeley, CA (United States)

    2002-05-01

    Current trends toward miniaturization and the use of lead(Pb)-free solder in electronic packaging present new problems in the reliability of solder joints. This study was performed in order to understand the microstructure and microstructural evolution of small volumes of nominally eutectic Au-Sn solder joints (80Au-20Sn by weight), which gives insight into properties and reliability.

  9. Spectropolarimetry of the Type IIb SN 2008aq

    CERN Document Server

    Stevance, H F; Baade, D; Hoflich, P; Patat, F; Spyromilio, J; Wheeler, J C; Clocchiatti, A; Wang, L; Yang, Y; Zelaya, P

    2016-01-01

    We present optical spectroscopy and spectropolarimetry of the Type IIb SN 2008aq 16 days and 27 days post-explosion. The spectrum of SN 2008aq remained dominated by Halpha P Cygni profile at both epochs, but showed a significant increase in the strength of the helium features, which is characteristic of the transition undergone by supernovae between Type IIb and Type Ib. Comparison of the spectra of SN 2008aq to other Type IIb SNe (SN 1993J, SN 2011dh, and SN 2008ax) at similar epochs revealed that the helium lines in SN 2008aq are much weaker, suggesting that its progenitor was stripped to a lesser degree. SN 2008aq also showed significant levels of continuum polarisation at p_cont = 0.70 (+/- 0.22) % in the first epoch, increasing to p_cont = 1.21 (+/- 0.33) % by the second epoch. Moreover, the presence of loops in the q-u planes of Halpha and He I in the second epoch suggests a departure from axial symmetry.

  10. Wafer bonding using Cu-Sn intermetallic bonding layers

    NARCIS (Netherlands)

    Flötgen, C.; Pawlak, M.; Pabo, E.; Wiel, H.J. van de; Hayes, G.R.; Dragoi, V.

    2014-01-01

    Wafer-level Cu-Sn intermetallic bonding is an interesting process for advanced applications in the area of MEMS and 3D interconnects. The existence of two intermetallic phases for Cu-Sn system makes the wafer bonding process challenging. The impact of process parameters on final bonding layer

  11. Hydrogen mediated transport of Sn to Ru film surface

    NARCIS (Netherlands)

    Faradzhev, N.; Sidorkin, V.

    2009-01-01

    The authors report on the interaction of atomic hydrogen with Sn and thin Ru film at room temperature. The study is done using a combination of photoelectron and low energy ion scattering spectroscopies as well as scanning electron microscopy. The adsorption of hydrogen on a Sn surface leads to the

  12. Hydrogen mediated transport of Sn to Ru film surface

    NARCIS (Netherlands)

    Faradzhev, N.; Sidorkin, V.

    2009-01-01

    The authors report on the interaction of atomic hydrogen with Sn and thin Ru film at room temperature. The study is done using a combination of photoelectron and low energy ion scattering spectroscopies as well as scanning electron microscopy. The adsorption of hydrogen on a Sn surface leads to the

  13. Do π-conjugative effects facilitate SN2 reactions?

    Science.gov (United States)

    Wu, Chia-Hua; Galabov, Boris; Wu, Judy I-Chia; Ilieva, Sonia; Schleyer, Paul von R; Allen, Wesley D

    2014-02-26

    Rigorous quantum chemical investigations of the SN2 identity exchange reactions of methyl, ethyl, propyl, allyl, benzyl, propargyl, and acetonitrile halides (X = F(-), Cl(-)) refute the traditional view that the acceleration of SN2 reactions for substrates with a multiple bond at Cβ (carbon adjacent to the reacting Cα center) is primarily due to π-conjugation in the SN2 transition state (TS). Instead, substrate-nucleophile electrostatic interactions dictate SN2 reaction rate trends. Regardless of the presence or absence of a Cβ multiple bond in the SN2 reactant in a series of analogues, attractive Cβ(δ(+))···X(δ(-)) interactions in the SN2 TS lower net activation barriers (E(b)) and enhance reaction rates, whereas repulsive Cβ(δ(-))···X(δ(-)) interactions increase E(b) barriers and retard SN2 rates. Block-localized wave function (BLW) computations confirm that π-conjugation lowers the net activation barriers of SN2 allyl (1t, coplanar), benzyl, propargyl, and acetonitrile halide identity exchange reactions, but does so to nearly the same extent. Therefore, such orbital interactions cannot account for the large range of E(b) values in these systems.

  14. SN 2002cx The Most Peculiar Known Type Ia Supernova

    CERN Document Server

    Li, W; Chornock, R; Berger, E; Berlind, P; Calkins, M L; Challis, P M; Fassnacht, C D; Jha, S; Kirshner, R P; Matheson, T; Sargent, W L W; Simcoe, R A; Smith, G H; Squires, G; Li, Weidong; Filippenko, Alexei V.; Chornock, Ryan; Berger, Edo; Berlind, Perry; Calkins, Michael L.; Challis, Peter; Fassnacht, Chris; Jha, Saurabh; Kirshner, Robert P.; Matheson, Thomas; Sargent, Wallace L. W.; Simcoe, Robert A.; Smith, Graeme H.; Squires, Gordon

    2003-01-01

    We present photometric and spectroscopic observations of supernova (SN) 2002cx, which reveal it to be unique among all observed type Ia supernovae (SNe Ia). SN 2002cx exhibits a SN 1991T-like premaximum spectrum, a SN 1991bg-like luminosity, and expansion velocities roughly half those of normal SNe Ia. Photometrically, SN 2002cx has a broad peak in the $R$ band and a plateau phase in the $I$ band, and slow late-time decline. The $(B - V)$ color evolution is nearly normal, but the $(V - R)$ and $(V - I)$ colors are very red. Early-time spectra of SN 2002cx evolve very quickly and are dominated by lines from Fe-group elements; features from intermediate-mass elements (Ca, S, Si) are weak or absent. Mysterious emission lines are observed around 7000 \\AA\\ at about 3 weeks after maximum brightness. The nebular spectrum of SN 2002cx is also unique, consisting of narrow iron and cobalt lines. The observations of SN 2002cx are inconsistent with the observed spectral/photometric sequence, and provide a major challenge...

  15. Performance of six functionals (LDA, PBE, PBESOL, B3LYP, PBE0, and WC1LYP) in the simulation of vibrational and dielectric properties of crystalline compounds. The case of forsterite Mg2SiO4.

    Science.gov (United States)

    De la Pierre, M; Orlando, R; Maschio, L; Doll, K; Ugliengo, P; Dovesi, R

    2011-07-15

    The performance of six different density functionals (LDA, PBE, PBESOL, B3LYP, PBE0, and WC1LYP) in describing the infrared spectrum of forsterite, a crystalline periodic system with orthorhombic unit cell (28 atoms in the primitive cell, Pbmn space group), is investigated by using the periodic ab initio CRYSTAL09 code and an all-electron Gaussian-type basis set. The transverse optical (TO) branches of the 35 IR active modes are evaluated at the equilibrium geometry together with the oscillator strengths and the high-frequency dielectric tensor ϵ(∞) . These quantities are essential to compute the dielectric function ϵ(ν), and then the reflectance spectrum R(ν), which is compared with experiment. It turns out that hybrid functionals perform better than LDA and GGA, in general; that B3LYP overperforms WC1LYP and, in turn, PBE0; that PBESOL is better than PBE; that LDA is the worst performing functional among the six under study.

  16. Detection of the Sn(III) intermediate and the mechanism of the Sn(IV)/Sn(II) electroreduction reaction in bromide media by cyclic voltammetry and scanning electrochemical microscopy.

    Science.gov (United States)

    Chang, Jinho; Bard, Allen J

    2014-01-08

    Fast-scan cyclic voltammetry (CV) and scanning electrochemical microscopy (SECM) were used to investigate the reduction of Sn(IV) as the hexabromo complex ion in a 2 M HBr-4 M NaBr medium. CV at scan rates to 100 V/s and SECM indicated the reaction pathway involves ligand-coupled electron transfer via an ECEC-DISP process: (1) one-electron reduction of Sn(IV)Br6(2-) to Sn(III)Br6(3-); (2) bromide dissociation of the reduced Sn(III)Br6(3-) to Sn(III)Br5(2-); (3) disproportionation of the reduced 2Sn(III)Br5(2-) to Sn(IV)Br5(-) and Sn(II)Br5(3-); (4) one-electron reduction of Sn(III)Br5(2-) to Sn(II)Br5(3-); (5) bromide dissociation from Sn(II)Br5 to Sn(II)Br4(2-). The intermediate Sn(III) species was confirmed by SECM(3-), where the Sn(III) generated at the Au tip was collected on a Au substrate in the tip generation/substrate collection mode when the distance between the tip and substrate was a few hundred nanometers.

  17. Synthesis and lithium storage properties of Zn, Co and Mg doped SnO2 Nano materials

    CSIR Research Space (South Africa)

    Palaniyandy, Nithyadharseni

    2017-09-01

    Full Text Available In this paper, we show that magnesium and cobalt doped SnO2 (Mg-SnO2 and Co-SnO2) nanostructures have profound influence on the discharge capacity and coulombic efficiency of lithium ion batteries (LIBs) employing pure SnO2 and zinc doped SnO2 (Zn-Sn...

  18. SiSn diodes: Theoretical analysis and experimental verification

    KAUST Repository

    Hussain, Aftab M.

    2015-08-24

    We report a theoretical analysis and experimental verification of change in band gap of silicon lattice due to the incorporation of tin (Sn). We formed SiSn ultra-thin film on the top surface of a 4 in. silicon wafer using thermal diffusion of Sn. We report a reduction of 0.1 V in the average built-in potential, and a reduction of 0.2 V in the average reverse bias breakdown voltage, as measured across the substrate. These reductions indicate that the band gap of the silicon lattice has been reduced due to the incorporation of Sn, as expected from the theoretical analysis. We report the experimentally calculated band gap of SiSn to be 1.11 ± 0.09 eV. This low-cost, CMOS compatible, and scalable process offers a unique opportunity to tune the band gap of silicon for specific applications.

  19. Process of electroless plating Cu-Sn-Zn ternary alloy

    Institute of Scientific and Technical Information of China (English)

    2006-01-01

    Cu-Sn-Zn ternary alloy layer with 10 μm thickness was prepared through electroless plating method. The influences of process conditions including the concentration of metallic salts, reductant and complex agent on Cu-Sn-Zn alloy were studied in details.The stability to bear color changes and corrosion resistance of Cu-Sn-Zn film layer were studied through air-exposure experiment and electrochemical analyses test respectively. The results show that the performances of Cu-Sn-Zn film layer are obviously superior to brass matrix. By use of SEM,EDS and XRD, the morphology, microstructure and chemical composition were investigated. The results show that complex agent can increase the content of Sn and Zn, improve the evenness and compactness and decrease needle holes, therefore the properties of electroless plating layer such as the stability to bear color changes and corrosion resistance are improved remarkably.The probable mechanism of complex agent was discussed.

  20. Polymer-SnO2 composite membranes

    DEFF Research Database (Denmark)

    Nørgaard, Casper Frydendal; Skou, Eivind Morten

    When designing sulfonic acid based ionomers, high ion exchange capacity (IEC) comes at the expense of the mechanical properties. With too high IEC, the membrane will excessively swell or even dissolve in water. Therefore a suitable compromise must be found between high charge carrier concentration...... and adequate mechanical properties. It has been demonstrated that this compromise can be found at higher IEC when the mechanical properties are improved by increasing crystallinity, increasing molecular weight, crosslinking or reinforcement of the membrane by dispersion of interacting particles therein....... This work utilizes the latter approach and makes use of particles of tin dioxide (SnO2). Polymer-SnO2 composite membranes were successfully prepared using an ion-exchange method. SnO2 was incorporated into membranes by ion-exchange in solutions of SnCl2 ∙ 2 H2O in methanol, followed by oxidation to SnO2...

  1. The structure of 100Sn and neighbouring nuclei

    Science.gov (United States)

    Faestermann, T.; Górska, M.; Grawe, H.

    2013-03-01

    The nuclear structure in the 100Sn region is reviewed. State-of-the-art experimental techniques involving stable and radioactive beam facilities have enabled access to exotic nuclei in its next neighbourhood. The analysis of experimental data has established the shell structure and its evolution towards N=Z=50, seniority conservation and proton-neutron interaction in the g9/2 orbit, the super-allowed Gamow-Teller decay of 100Sn, masses and half lives along the rp-path, and super-allowed α decay beyond 100Sn. The status of theoretical approaches in shell model and mean-field investigations is described and their predictive power assessed. Structure features of 100Sn and its doubly-magic neighbours 56Ni at N=Z, 132Sn and 78Ni at N≫Z are compared. An outlook is given on future developments of experimental and theoretical methods.

  2. U7 snRNAs: A Computational Survey

    Institute of Scientific and Technical Information of China (English)

    Mania; Marz; Axel; Mosig; B(a)rbel; M.R.; Stadler; Peter; F.; Stadler

    2007-01-01

    U7 small nuclear RNA (snRNA) sequences have been described only for a handful of animal species in the past. Here we describe a computational search for func- tional U7 snRNA genes throughout vertebrates including the upstream sequence elements characteristic for snRNAs transcribed by polymerase Ⅱ. Based on the results of this search, we discuss the high variability of U7 snRNAs in both se- quence and structure, and report on an attempt to find U7 snRNA sequences in basal deuterostomes and non-drosophilids insect genomes based on a combination of sequence, structure, and promoter features. Due to the extremely short se- quence and the high variability in both sequence and structure, no unambiguous candidates were found. These results cast doubt on putative U7 homologs in even more distant organisms that are reported in the most recent release of the Rfam database.

  3. Intermetallic compound formation in Sn-Co-Cu, Sn-Ag-Cu and eutectic Sn-Cu solder joints on electroless Ni(P) immersion Au surface finish after reflow soldering

    Energy Technology Data Exchange (ETDEWEB)

    Sun Peng [Key State Lab for New Displays and System Integration (Chinese Ministry of Education), SMIT Center, Shanghai University, 200072 Shanghai (China) and Department of Microtechnology and Nanoscience, SMIT Center, Chalmers University of Technology, 412-96 Goeteborg (Sweden)]. E-mail: peng.sun@mc2.chalmers.se; Andersson, Cristina [Department of Microtechnology and Nanoscience, SMIT Center, Chalmers University of Technology, 412-96 Goeteborg (Sweden); Wei Xicheng [Key State Lab for New Displays and System Integration (Chinese Ministry of Education), SMIT Center, Shanghai University, 200072 Shanghai (China); Cheng Zhaonian [Department of Microtechnology and Nanoscience, SMIT Center, Chalmers University of Technology, 412-96 Goeteborg (Sweden); Shangguan Dongkai [Flextronics International, San Jose, CA (United States); Liu Johan [Key State Lab for New Displays and System Integration (Chinese Ministry of Education), SMIT Center, Shanghai University, 200072 Shanghai (China); Department of Microtechnology and Nanoscience, SMIT Center, Chalmers University of Technology, 412-96 Goeteborg (Sweden)

    2006-11-25

    The interfacial reactions between Sn-0.4Co-0.7Cu eutectic alloy and immersion Au/electroless Ni(P)/Cu substrate were investigated after reflow soldering at 260 deg. C for 2 min. Common Sn-4.0Ag-0.5Cu and eutectic Sn-0.7Cu solders were used as reference. Two types of intermetallic compounds (IMC) were found in the solder matrix of the Sn-0.4Co-0.7Cu alloy, namely coarser CoSn{sub 2} and finer Cu{sub 6}Sn{sub 5} particles, while only one ternary (Cu, Ni){sub 6}Sn{sub 5} interfacial compound was detected between the solder alloy and the electroless nickel and immersion gold (ENIG) coated substrate. The same trend was also observed for the Sn-Ag-Cu and Sn-Cu solder joints. Compared with the CoSn{sub 2} particles found in the Sn-Co-Cu solder and the Ag{sub 3}Sn particles found in the Sn-Ag-Cu solder, the Cu{sub 6}Sn{sub 5} particles found in both solder systems exhibited finer structure and more uniform distribution. It was noted that the thickness of the interfacial IMCs for the Sn-Co-Cu, Sn-Ag-Cu and Sn-Cu alloys was 3.5 {mu}m, 4.3 {mu}m and 4.1 {mu}m, respectively, as a result of longer reflow time above the alloy's melting temperature since the Sn-Ag-Cu solder alloy has the lowest melting point.

  4. Ternary Phases (Heusler) in the System Ti-Co-Sn

    Science.gov (United States)

    Kosinskiy, Andrey; Karlsen, Ole Bjørn; Sørby, Magnus H.; Prytz, Øystein

    2016-09-01

    Some of the Heusler-phases (XY 2 Z and XYZ) are known to have large homogeneity ranges which can be useful for tuning material properties. In this work, we have revised the isothermal section of the Ti-Co-Sn system at 973 K (700 °C). A total of 29 ternary compositions, mostly in the regions TiCo2-x Sn for 0 ≤ x ≤ 1 and Ti1+y Co2Sn1-y for 0 ≤ y ≤ 1, were prepared by arc-melting, then ball-milled and annealed. The resulting annealed powder samples were studied by applying the Rietveld method to X-ray and neutron powder diffraction data. Half-Heusler TiCoSn was not observed. The Heusler phase observed in TiCo2-x Sn has compositions ranging from TiCo1.52Sn to TiCo2Sn and has the half-Heusler structure where the excess of Co is located on the semi-filled tetrahedral site 4d (¾, ¾, ¾) in the space group F-43m. At 1273 K (1000 °C), this solid solubility is expanded from TiCo2Sn to TiCo with full solid solubility where Ti is gradually replacing Sn (Ti1+y Co2Sn1-y for 0 ≤ y ≤ 1), while at 973 K (700 °C) there is a small solubility gap for 0.0 ≤ y ≤ 0.2.

  5. Sn-doped hematite nanostructures for photoelectrochemical water splitting.

    Science.gov (United States)

    Ling, Yichuan; Wang, Gongming; Wheeler, Damon A; Zhang, Jin Z; Li, Yat

    2011-05-11

    We report on the synthesis and characterization of Sn-doped hematite nanowires and nanocorals as well as their implementation as photoanodes for photoelectrochemical water splitting. The hematite nanowires were prepared on a fluorine-doped tin oxide (FTO) substrate by a hydrothermal method, followed by high temperature sintering in air to incorporate Sn, diffused from the FTO substrate, as a dopant. Sn-doped hematite nanocorals were prepared by the same method, by adding tin(IV) chloride as the Sn precursor. X-ray photoelectron spectroscopy analysis confirms Sn(4+) substitution at Fe(3+) sites in hematite, and Sn-dopant levels increase with sintering temperature. Sn dopant serves as an electron donor and increases the carrier density of hematite nanostructures. The hematite nanowires sintered at 800 °C yielded a pronounced photocurrent density of 1.24 mA/cm(2) at 1.23 V vs RHE, which is the highest value observed for hematite nanowires. In comparison to nanowires, Sn-doped hematite nanocorals exhibit smaller feature sizes and increased surface areas. Significantly, they showed a remarkable photocurrent density of 1.86 mA/cm(2) at 1.23 V vs RHE, which is approximately 1.5 times higher than that of the nanowires. Ultrafast spectroscopy studies revealed that there is significant electron-hole recombination within the first few picoseconds, while Sn doping and the change of surface morphology have no major effect on the ultrafast dynamics of the charge carriers on the picosecond time scales. The enhanced photoactivity in Sn-doped hematite nanostructures should be due to the improved electrical conductivity and increased surface area.

  6. Structural and electronic properties of SnO{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Akgul, Funda Aksoy, E-mail: fundaaksoy01@gmail.com [Physics Department, Nigde University, 51240 Nigde (Turkey); Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States); Gumus, Cebrail, E-mail: cgumus@cu.edu.tr [Physics Department, Cukurova University, 01330 Adana (Turkey); Er, Ali O. [Department of Chemistry, University of California, Irvine, CA 92612 (United States); Farha, Ashraf H. [Electrical and Computer Engineering, Old Dominion University, Norfolk, VA 23529 (United States); Physics Department, Ain Shams University, Cairo 11566 (Egypt); Akgul, Guvenc [Bor Vocational School, Nigde University, 51700 Nigde (Turkey); Ufuktepe, Yuksel [Physics Department, Cukurova University, 01330 Adana (Turkey); Liu, Zhi [Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States)

    2013-12-05

    Highlights: •Structural and electronic properties of SnO{sub 2} films were determined. •Oxidation states of the SnO{sub 2} thin films were confirmed by XPS analysis. •Chemical component is non-stoichiometric and ratio of oxygen to tin was 1.85. -- Abstract: Highly transparent polycrystalline thin film of SnO{sub 2} (tin dioxide) was deposited using a simple and low cost spray pyrolysis method. The film was prepared from an aqueous solution of tin tetrachloride (stannic chloride) onto glass substrates at 400 °C. A range of diagnostic techniques including X-ray diffraction (XRD), UV–visible absorption, atomic force microscopy (AFM), scanning electron microscopy (SEM), and synchrotron-based X-ray photoelectron spectroscopy (XPS) were used to investigate structural, optical, and electronic properties of the resulting film. Deposited film was found to be polycrystalline. A mixture of SnO and SnO{sub 2} phases was observed. The average crystallite size of ∼21.3 nm for SnO{sub 2} was calculated by Rietveld method using XRD data. The oxidation states of the SnO{sub 2} thin film were confirmed by the shape analysis of corresponding XPS O 1s, Sn 3d, and Sn 4d peaks using the decomposition procedure. The analysis of the XPS core level peaks showed that the chemical component is non-stoichiometric and the ratio of oxygen to tin (O/Sn) is 1.85 which is slightly under stoichiometry.

  7. Endohedrally filled [Ni@Sn9](4-) and [Co@Sn9](5-) clusters in the neat solids Na12Ni(1-x)Sn17 and K(13-x)Co(1-x)Sn17: crystal structure and 119Sn solid-state NMR spectroscopy.

    Science.gov (United States)

    Hlukhyy, Viktor; Stegmaier, Saskia; van Wüllen, Leo; Fässler, Thomas F

    2014-09-15

    A systematic approach to the formation of endohedrally filled atom clusters by a high-temperature route instead of the more frequent multistep syntheses in solution is presented. Zintl phases Na12Ni(1-x)Sn17 and K(13-x)Co(1-x)Sn17, containing endohedrally filled intermetalloid clusters [Ni@Sn9](4-) or [Co@Sn9](5-) beside [Sn4](4-), are obtained from high-temperature reactions. The arrangement of [Ni@Sn9](4-) or [Co@Sn9](5-) and [Sn4](4-) clusters, which are present in the ratio 1:2, can be regarded as a hierarchical replacement variant of the hexagonal Laves phase MgZn2 on the Mg and Zn positions, respectively. The alkali-metal positions are considered for the first time in the hierarchical relationship, which leads to a comprehensive topological parallel and a better understanding of the composition of these compounds. The positions of the alkali-metal atoms in the title compounds are related to the known inclusion of hydrogen atoms in the voids of Laves phases. The inclusion of Co atoms in the {Sn9} cages correlates strongly with the number of K vacancies in K(13-x)Co(1-x)Sn17 and K(5-x)Co(1-x)Sn9, and consequently, all compounds correspond to diamagnetic valence compounds. Owing to their diamagnetism, K(13-x)Co(1-x)Sn17, and K(5-x)Co(1-x)Sn9, as well as the d-block metal free binary compounds K12Sn17 and K4Sn9, were characterized for the first time by (119)Sn solid-state NMR spectroscopy. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  8. Carbon supported Pd-Sn and Pd-Ru-Sn nanocatalysts for ethanol electro-oxidation in alkaline medium

    CSIR Research Space (South Africa)

    Modibedi, RM

    2011-04-01

    Full Text Available the coverage of the adsorbed ethoxy (CH3COads) species on the nanocatalyst surface, thus yielding an increase in current density. Pd-Sn/C displayed better electrocatalytic activity and stability towards poisoning than Pd-Ru-Sn/C and Pt-Ru/C (E-TEK Inc...

  9. Pulse number controlled laser annealing for GeSn on insulator structure with high substitutional Sn concentration

    Science.gov (United States)

    Moto, Kenta; Matsumura, Ryo; Sadoh, Taizoh; Ikenoue, Hiroshi; Miyao, Masanobu

    2016-06-01

    Crystalline GeSn-on-insulator structures with high Sn concentration (>8%), which exceeds thermal equilibrium solid-solubility (˜2%) of Sn in Ge, are essential to achieve high-speed thin film transistors and high-efficiency optical devices. We investigate non-thermal equilibrium growth of Ge1-xSnx (0 ≤ x ≤ 0.2) on quartz substrates by using pulsed laser annealing (PLA). The window of laser fluence enabling complete crystallization without film ablation is drastically expanded (˜5 times) by Sn doping above 5% into Ge. Substitutional Sn concentration in grown layers is found to be increased with decreasing irradiation pulse number. This phenomenon can be explained on the basis of significant thermal non-equilibrium growth achieved by higher cooling rate after PLA with a lower pulse number. As a result, GeSn crystals with substitutional Sn concentration of ˜12% are realized at pulse irradiation of single shot for the samples with the initial Sn concentration of 15%. Raman spectroscopy and electron microscopy measurements reveal the high quality of the grown layer. This technique will be useful to fabricate high-speed thin film transistors and high-efficiency optical devices on insulating substrates.

  10. Insight into the Effect of Sn on CO and Formic Acid Oxidation at PtSn Catalysts

    DEFF Research Database (Denmark)

    Stevanović, S.; Tripković, D.; Tripkovic, Vladimir

    2014-01-01

    The role of Sn on the catalytic activity for CO and formic acid oxidation is studied by comparing the activities of differently treated PtSn/C and Pt/C catalysts. The catalysts are prepared by a microwave-assisted polyol synthesis method. As revealed by scanning tunneling and transmission electron...... is present only in the subsurface layers. The subsurface Sn has a mild effect on the CO activity, and hence the onset potential is only marginally shifted to cathodic potentials by ∼50 mV compared to that on Pt/C. The formic acid oxidation is enhanced at any of the PtSn/C surfaces with Sn in the surface...... alloying degree and is mainly composed of Pt and Pt3Sn phases. The remaining Sn is present in the form of very small tin oxide particles. Different surfaces are obtained by double-layer, oxide, and CO annealing of the Pt/C and PtSn/C catalysts and by modifying the CO-annealed surfaces with irreversibly...

  11. Unexpected, spontaneous and selective formation of colloidal Pt 3Sn nanoparticles using organometallic Pt and Sn complexes

    KAUST Repository

    Boualleg, Malika

    2010-01-01

    The facile and selective synthesis of small crystalline Pt3Sn alloy nanoparticles was performed at room temperature under H2, using a colloidal approach without the use of extra-stabilizing ligands. The Pt 3Sn alloy was found to be obtained spontaneously as the unique phase regardless of the number of tin equivalents introduced. © 2010 The Royal Society of Chemistry.

  12. X-ray powder diffraction and EXAFS studies on SnAPO-5 and Cu : SnAPO-5

    DEFF Research Database (Denmark)

    Flavell, W. R.; Nicholson, D. G.; Nilsen, M. H.;

    2001-01-01

    SnAPO-5 was synthesised and calcined at 800 degreesC. Copper was introduced into the calcined material by the incipient wetness method. The as-synthesised, calcined and copper-incorporated SnAPO-5 have been studied using X-ray powder diffraction and EXAFS. Rietveld refinements show that the overa...

  13. Synthesis and characterization of highly conductive Sn-Ag bimetallic nanoparticles for printed electronics

    Energy Technology Data Exchange (ETDEWEB)

    Jo, Yun Hwan; Jung, Inyu; Kim, Na Rae; Lee, Hyuck Mo, E-mail: hmlee@kaist.ac.kr [KAIST, Department of Materials Science and Engineering (Korea, Republic of)

    2012-03-15

    To synthesize low-cost, highly conductive metal nanoparticles for inkjet printing materials, we synthesized Sn-Ag bimetallic nanoparticles using a polyol process with poly(vinyl pyrrolidone). Because a surface oxidation layer forms on Sn nanoparticles, various compositions of Sn-xAg [x = 0, 20, 40, 60, 80, 100 (wt%)] nanoparticles were synthesized and characterized for the purpose of removing the {beta}-Sn phase. The results of XPS, TEM, and XRD analyses confirm that the formation of a bimetallic phase, such as Ag{sub 4}Sn or Ag{sub 3}Sn, hinders the {beta}-Sn phase and, consequently, leads to the removal of the surface oxidation layer. To measure the sheet resistance of various compositions of Sn-Ag nanoparticles, we made the ink that contains Sn-Ag by dispersing 10 wt% of Sn-Ag nanoparticles in methanol. The sheet resistance is decreased by the conductive Sn-Ag phases, such as the fcc, Ag{sub 4}Sn, and Ag{sub 3}Sn phases, but sharply increased by the low-conductive Sn nanoparticles and the surface oxidation layer on the Sn nanoparticles. The sheet resistance results confirm that 80Ag20Sn and 60Ag40Sn bimetallic nanoparticles are suitable candidates for inkjet printing materials.

  14. Effect of plasma etching on photoluminescence of SnO(x)/Sn nanoparticles deposited on DOPC lipid membrane.

    Science.gov (United States)

    An, Hyeun Hwan; Lee, Seung Jae; Baek, Seung Ha; Han, Won Bae; Kim, Young Ho; Yoon, Chong Seung; Suh, Sang Hee

    2012-02-15

    The photoluminescence characteristic of the SnO(x)/Sn nanoparticles deposited on a solid supported liquid-crystalline phospholipid (1,2-dioleoyl-sn-glycero-3-phosphocholine) membrane was probed after plasma etching the nanoparticle monolayer. It was shown that the plasma etching of the nanoparticle surface greatly altered the particle morphology and enhanced the PL effect, especially when the particle size was below 10 nm in spite of strong presence of surrounding carbon. The enhancement mainly stemmed from the growth of a new PL peak due to the additional defect states produced on the nanoparticle surface by the plasma etching. It was also shown that hydrating the SnO(x)/Sn nanoparticles similarly improved the PL response of the nanoparticles as the hydration produced an additional oxygen-rich oxide layer on the particle surface. Copyright © 2011 Elsevier Inc. All rights reserved.

  15. Research on structure of Cu2ZnSn(S, Se)4 thin films with high Sn-related phases

    Science.gov (United States)

    Li, Peng-yu; Xue, Yu-ming; Liu, Hao; Xia, Dan; Song, Dian-you; Feng, Shao-jun; Sun, Hai-tao; Yu, Bing-bing; Qiao, Zai-xiang

    2016-11-01

    Cu2ZnSn(S, Se)4 (CZTSSe) thin films were deposited on flexible substrates by three evaporation processes at high temperature. The chemical compositions, microstructures and crystal phases of the CZTSSe thin films were respectively characterized by inductively coupled plasma optical emission spectrometer (ICP-OES), scanning electron microscopy (SEM), X-ray diffraction (XRD) and Raman scattering spectrum. The results show that the single-step evaporation method at high temperature yields CZTSSe thin films with nearly pure phase and high Sn-related phases. The elemental ratios of Cu/(Zn+Sn)=1.00 and Zn/Sn=1.03 are close to the characteristics of stoichiometric CZTSSe. There is the smooth and uniform crystalline at the surface and large grain size at the cross section for the films, and no other phases exist in the film by XRD and Raman shift measurement. The films are no more with the Sn-related phase deficiency.

  16. Sn powder as reducing agents and SnO2 precursors for the synthesis of SnO2-reduced graphene oxide hybrid nanoparticles.

    Science.gov (United States)

    Chen, Mingxi; Zhang, Congcong; Li, Lingzhi; Liu, Yu; Li, Xichuan; Xu, Xiaoyang; Xia, Fengling; Wang, Wei; Gao, Jianping

    2013-12-26

    A facile approach to prepare SnO2/rGO (reduced graphene oxide) hybrid nanoparticles by a direct redox reaction between graphene oxide (GO) and tin powder was developed. Since no acid was used, it is an environmentally friendly green method. The SnO2/rGO hybrid nanoparticles were characterized by ultraviolet-visible spectroscopy, Raman spectroscopy, thermogravimetric analysis, X-ray diffraction analysis, and X-ray photoelectron spectroscopy. The microstructure of the SnO2/rGO was observed with scanning electron microscopy and transmission electron microscopy. The tin powder efficiently reduced GO to rGO, and the Sn was transformed to SnO2 nanoparticles (∼45 nm) that were evenly distributed on the rGO sheets. The SnO2/rGO hybrid nanoparticles were then coated on an interdigital electrode to fabricate a humidity sensor, which have an especially good linear impedance response from 11% to 85% relative humidity.

  17. Sn surface-enriched Pt-Sn bimetallic nanoparticles as a selective and stable catalyst for propane dehydrogenation

    KAUST Repository

    Zhu, Haibo

    2014-12-01

    A new one pot, surfactant-free, synthetic route based on the surface organometallic chemistry (SOMC) concept has been developed for the synthesis of Sn surface-enriched Pt-Sn nanoparticles. Bu3SnH selectively reacts with [Pt]-H formed in situ at the surface of Pt nanoparticles, Pt NPs, obtained by reduction of K2PtCl4 by LiB(C2H5)3H. Chemical analysis, 1H MAS and 13C CP/MAS solid-state NMR as well as two-dimensional double-quantum (DQ) and triple-quantum (TQ) experiments show that organo-tin moieties Sn(n-C4H9) are chemically linked to the surface of Pt NPs to produce, in fine, after removal of most of the n-butyl fragment, bimetallic Pt-Sn nanoparticles. The Sn(n-CH2CH2CH2CH3) groups remaining at the surface are believed to stabilize the as-synthesized Pt-Sn NPs, enabling the bimetallic NPs to be well dispersed in THF. Additionally, the Pt-Sn nanoparticles can be supported on MgAl2O4 during the synthesis of the nanoparticles. Some of the Pt-Sn/MgAl2O4 catalyst thus prepared exhibits high activity in PROX of CO and an extremely high selectivity and stability in propane dehydrogenation to propylene. The enhanced activity in propane dehydrogenation is associated with the high concentration of inactive Sn at the surface of Pt nanoparticles which ”isolates” the active Pt atoms. This conclusion is confirmed by XRD, NMR, TEM, and XPS analysis.

  18. Preparation of porous SnO{sub 2} helical nanotubes and SnO{sub 2} sheets

    Energy Technology Data Exchange (ETDEWEB)

    Fei, Ling; Xu, Yun [Department of Chemical Engineering, New Mexico State University, Las Cruces, NM 88003 (United States); Chen, Zheng [Department of Chemical and Biomolecular Engineering, University of California, Los Angeles, CA 90095 (United States); Yuan, Bin; Wu, Xiaofei; Hill, Joshua; Lin, Qianglu; Deng, Shuguang; Andersen, Paul [Department of Chemical Engineering, New Mexico State University, Las Cruces, NM 88003 (United States); Lu, Yunfeng [Department of Chemical and Biomolecular Engineering, University of California, Los Angeles, CA 90095 (United States); Luo, Hongmei, E-mail: hluo@nmsu.edu [Department of Chemical Engineering, New Mexico State University, Las Cruces, NM 88003 (United States)

    2013-06-15

    We report a surfactant-free chemical solution route for synthesizing one-dimensional porous SnO{sub 2} helical nanotubes templated by helical carbon nanotubes and two-dimensional SnO{sub 2} sheets templated by graphite sheets. Transmission electron microscopy, X-ray diffraction, cyclic voltammetry, and galvanostatic discharge–charge analysis are used to characterize the SnO{sub 2} samples. The unique nanostructure and morphology make them promising anode materials for lithium-ion batteries. Both the SnO{sub 2} with the tubular structure and the sheet structure shows small initial irreversible capacity loss of 3.2% and 2.2%, respectively. The SnO{sub 2} helical nanotubes show a specific discharge capacity of above 800 mAh g{sup −1} after 10 charge and discharge cycles, exceeding the theoretical capacity of 781 mAh g{sup −1} for SnO{sub 2}. The nanotubes remain a specific discharge capacity of 439 mAh g{sup −1} after 30 cycles, which is better than that of SnO{sub 2} sheets (323 mAh g{sup −1}). - Highlights: • Synthesized porous SnO{sub 2} helical nanotubes with diameters of 100–120 nm. • Synthesized porous SnO{sub 2} sheets template by graphite sheets. • The tubular and sheet SnO{sub 2} have small initial irreversible capacity loss of 3.2 and 2.2%. • The tubular structure shows better discharge capacity than the sheet structure.

  19. Influence of hydrogen surface passivation on Sn segregation, aggregation, and distribution in GeSn/Ge(001) materials

    Science.gov (United States)

    Johll, Harman; Samuel, Milla; Koo, Ruey Yi; Kang, Hway Chuan; Yeo, Yee-Chia; Tok, Eng Soon

    2015-05-01

    Plane-wave density functional theory is used to investigate the impact of hydrogen passivation of the p(2×2) reconstructed Ge1-xSnx surface on Sn segregation, aggregation, and distribution. On a clean surface, Sn preferentially segregates to the surface layer, with surface coverages of 25%, 50%, and 100% for total Sn concentrations of 2.5%, 5.0%, and 10.0%, respectively. In contrast, a hydrogen passivated surface increases interlayer migration of Sn to subsurface layers, in particular, to the third layer from the surface, and results in surface coverages of 0%, 0%, and 50% corresponding to Sn concentrations of 2.5%, 5.0%, and 10.0%, respectively. Hydrogen transfer from a Ge-capped surface to the one enriched with increasing Sn surface coverage is also an unfavorable process. The presence of hydrogen therefore reduces the surface energy by passivating the reactive dangling bonds and enhancing Sn interlayer migration to the subsurface layers. For both clean and hydrogenated surfaces, aggregation of Sn at the surface layer is also not favored. We explain these results by considering bond enthalpies and the enthalpies of hydrogenation for various surface reactions. Our results thus point to reduced Sn segregation to the surface in a Ge1-xSnx epitaxial thin film if CVD growth, using hydride precursors in the hydrogen limited growth regime, is used. This would lead to a more abrupt interface and is consistent with recent experimental observation. Hydrogenation is therefore a promising method for controlling and manipulating elemental population of Sn in a Ge1-xSnx epitaxial thin film.

  20. Host Galaxy Spectra and Consequences for SN Typing from the SDSS SN Survey

    Energy Technology Data Exchange (ETDEWEB)

    Olmstead, Matthew D.; Brown, Peter J.; Sako, Masao; Bassett, Bruce; Bizyaev, Dmitry; Brinkmann, J.; Brownstein, Joel R.; Brewington, Howard; Campbell, Heather; D’Andrea, Chris B.; Dawson, Kyle S.; Ebelke, Garrett L.; Frieman, Joshua A.; Galbany, Lluís; Garnavich, Peter; Gupta, Ravi R.; Hlozek, Renee; Jha, Saurabh W.; Kunz, Martin; Lampeitl, Hubert; Malanushenko, Elena; Malanushenko, Viktor; Marriner, John; Miquel, Ramon; Montero-Dorta, Antonio D.; Nichol, Robert C.; Oravetz, Daniel J.; Pan, Kaike; Schneider, Donald P.; Simmons, Audrey E.; Smith, Mathew; Snedden, Stephanie A.

    2014-03-06

    We present the spectroscopy from 5254 galaxies that hosted supernovae (SNe) or other transient events in the Sloan Digital Sky Survey II (SDSS-II). Obtained during SDSS-I, SDSS-II, and the Baryon Oscillation Spectroscopic Survey (BOSS), this sample represents the largest systematic, unbiased, magnitude limited spectroscopic survey of supernova (SN) host galaxies. Using the host galaxy redshifts, we test the impact of photometric SN classification based on SDSS imaging data with and without using spectroscopic redshifts of the host galaxies. Following our suggested scheme, there are a total of 1166 photometrically classified SNe Ia when using a flat redshift prior and 1126 SNe Ia when the host spectroscopic redshift is assumed. For 1024 (87.8%) candidates classified as likely SNe Ia without redshift information, we find that the classification is unchanged when adding the host galaxy redshift. Using photometry from SDSS imaging data and the host galaxy spectra, we also report host galaxy properties for use in future nalysis of SN astrophysics. Finally, we investigate the differences in the interpretation of the light curve properties with and without knowledge of the redshift. When using the SALT2 light curve fitter, we find a 21% increase in the number of fits that converge when using the spectroscopic redshift. Without host galaxy redshifts, we find that SALT2 light curve fits are systematically biased towards lower photometric redshift estimates and redder colors in the limit of low signal-to-noise data. The general improvements in performance of the light curve fitter and the increased diversity of the host galaxy sample highlights the importance of host galaxy spectroscopy for current photometric SN surveys such as the Dark Energy Survey and future surveys such as the Large Synoptic Survey Telescope.

  1. SnSAG5 is an alternative surface antigen of Sarcocystis neurona strains that is mutually exclusive to SnSAG1.

    Science.gov (United States)

    Crowdus, Carolyn A; Marsh, Antoinette E; Saville, Willliam J; Lindsay, David S; Dubey, J P; Granstrom, David E; Howe, Daniel K

    2008-11-25

    Sarcocystis neurona is an obligate intracellular parasite that causes equine protozoal myeloencephalitis (EPM). Previous work has identified a gene family of paralogous surface antigens in S. neurona called SnSAGs. These surface proteins are immunogenic in their host animals, and are therefore candidate molecules for development of diagnostics and vaccines. However, SnSAG diversity exists in strains of S. neurona, including the absence of the major surface antigen gene SnSAG1. Instead, sequence for an alternative SnSAG has been revealed in two of the SnSAG1-deficient strains. Herein, we present data characterizing this new surface protein, which we have designated SnSAG5. The results indicated that the protein encoded by the SnSAG5 sequence is indeed a surface-associated molecule that has characteristics consistent with the other SAGs identified in S. neurona and related parasites. Importantly, Western blot analyses of a collection of S. neurona strains demonstrated that 6 of 13 parasite isolates express SnSAG5 as a dominant surface protein instead of SnSAG1. Conversely, SnSAG5 was not detected in SnSAG1-positive strains. One strain, which was isolated from the brain of a sea otter, did not express either SnSAG1 or SnSAG5. Genetic analysis with SnSAG5-specific primers confirmed the presence of the SnSAG5 gene in Western blot-positive strains, while also suggesting the presence of a novel SnSAG sequence in the SnSAG1-deficient, SnSAG5-deficient otter isolate. The findings provide further indication of S. neurona strain diversity, which has implications for diagnostic testing and development of vaccines against EPM as well as the population biology of Sarcocystis cycling in the opossum definitive host.

  2. La掺杂BiPO4光催化降解亚甲基蓝模拟染料废水的试验研究%Experimental study on the photocatalytic degradation of methylene blue simulated dye wastewater with La-doped BiPO4

    Institute of Scientific and Technical Information of China (English)

    全玉莲

    2016-01-01

    La- doped BiPO4 was fabricated via a facile hydrothermal process, which was used as photocat⁃alyst for degrading 7.5 mg/L of simulated methylene blue dye wastewater under the UV light. The effects of the dosage of catalyst, pH of the solution, inorganic anions, and cycle times of catalyst on the photocatalytic efficiency were studied. The results indicated that the degradation efficiency of methylene blue in 90 min reached 95% under il umination of ultraviolet lamp, while the amount of La- doped BiPO4 nanoparticles was 1.0 g/L, and solution pH was 7. The presence of SO42- and PO43- had an inhibitory effect on the photocatalytic degradation of MB. The photocatalyst showed good photocatalytic property and stability after 4 cycles.%采用水热合成法制备了La掺杂BiPO4纳米粉末,使用该光催化剂在紫外光下对亚甲基蓝质量浓度为7.5 mg/L的模拟废水进行了光催化降解试验。考察了催化剂用量、溶液pH、无机阴离子和催化剂循环使用次数对光催化降解效果的影响。结果表明:在pH=7,光催化剂用量为1.0 g/L的条件下,用紫外杀菌灯照射90 min,La掺杂BiPO4对亚甲基蓝的降解率可达95%;SO42-、PO43-的存在对光催化降解具有抑制作用;该催化剂循环使用4次仍具有良好的光催化性能,且稳定性较好。

  3. $Nb_{3}Sn macrostructure, microstructure, and property comparisons for bronze and internal Sn process strands

    CERN Document Server

    Lee, P J; Larbalestier, D C

    2000-01-01

    The variation in irreversibility field, B*(T), with temperature has been measured for Nb/sub 3/Sn superconducting strands manufactured for ITER using vibrating sample and SQUID magnetometers. The high performance strands were developed for both high transport critical current density, J/sub c/, and low hysteresis loss. Despite a wide variety of designs and components, the strands could be split into two distinctive groups, based on the extrapolated irreversibility fields, which lie about 10% lower than the upper critical field. "Bronze-process" strands exhibited consistently higher B*(T) (28 T to 31 T) compared with "internal Sn" process (24 T to 26 T) conductors. The intrinsic critical current density of the superconductor, J/sub c (sc)/, and the specific pinning force of the grain boundaries, Q/sub gb/, were evaluated using the measured J/sub c/, and image analysis of the macro- and micro-structures. A bronze-processed Nb(-Ta)/sub 3 /Sn was found to have a higher J/sub c(sc)/ but lower Q/sub gb/ than Nb/sub...

  4. SnS Thin Film Solar Cells: Perspectives and Limitations

    Directory of Open Access Journals (Sweden)

    Simone Di Mare

    2017-02-01

    Full Text Available Thin film solar cells have reached commercial maturity and extraordinarily high efficiency that make them competitive even with the cheaper Chinese crystalline silicon modules. However, some issues (connected with presence of toxic and/or rare elements are still limiting their market diffusion. For this reason new thin film materials, such as Cu2ZnSnS4 or SnS, have been introduced so that expensive In and Te, and toxic elements Se and Cd, are substituted, respectively, in CuInGaSe2 and CdTe. To overcome the abundance limitation of Te and In, in recent times new thin film materials, such as Cu2ZnSnS4 or SnS, have been investigated. In this paper we analyze the limitations of SnS deposition in terms of reproducibility and reliability. SnS deposited by thermal evaporation is analyzed by X-ray diffraction, Raman spectroscopy, scanning electron microscopy, and atomic force microscopy. The raw material is also analyzed and a different composition is observed according to the different number of evaporation (runs. The sulfur loss represents one of the major challenges of SnS solar cell technology.

  5. Parametrized dielectric functions of amorphous GeSn alloys

    Energy Technology Data Exchange (ETDEWEB)

    D' Costa, Vijay Richard, E-mail: elevrd@nus.edu.sg; Wang, Wei; Yeo, Yee-Chia, E-mail: eleyeoyc@nus.edu.sg [Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117583 (Singapore); Schmidt, Daniel [Singapore Synchrotron Light Source, National University of Singapore, Singapore 117603 (Singapore)

    2015-09-28

    We obtained the complex dielectric function of amorphous Ge{sub 1−x}Sn{sub x} (0 ≤ x ≤ 0.07) alloys using spectroscopic ellipsometry from 0.4 to 4.5 eV. Amorphous GeSn films were formed by room-temperature implantation of phosphorus into crystalline GeSn alloys grown by molecular beam epitaxy. The optical response of amorphous GeSn alloys is similar to amorphous Ge and can be parametrized using a Kramers-Kronig consistent Cody-Lorentz dispersion model. The parametric model was extended to account for the dielectric functions of amorphous Ge{sub 0.75}Sn{sub 0.25} and Ge{sub 0.50}Sn{sub 0.50} alloys from literature. The compositional dependence of band gap energy E{sub g} and parameters associated with the Lorentzian oscillator have been determined. The behavior of these parameters with varying x can be understood in terms of the alloying effect of Sn on Ge.

  6. Facile route to SnS nanocrystals and their characterization

    Energy Technology Data Exchange (ETDEWEB)

    Koktysh, Dmitry S., E-mail: dmitry.koktysh@vanderbilt.edu [Department of Chemistry, Vanderbilt University, Station B 351822, Nashville, TN 37235 (United States); Vanderbilt Institute of Nanoscale Science and Engineering, Vanderbilt University, Station B 350106, Nashville, TN 37235 (United States); McBride, James R. [Department of Chemistry, Vanderbilt University, Station B 351822, Nashville, TN 37235 (United States); Vanderbilt Institute of Nanoscale Science and Engineering, Vanderbilt University, Station B 350106, Nashville, TN 37235 (United States); Geil, Robert D. [Vanderbilt Institute of Nanoscale Science and Engineering, Vanderbilt University, Station B 350106, Nashville, TN 37235 (United States); Department of Chemical and Biomolecular Engineering, Vanderbilt University, VU Station B 351604, Nashville, TN 37235 (United States); Schmidt, Benjamin W. [Department of Chemical and Biomolecular Engineering, Vanderbilt University, VU Station B 351604, Nashville, TN 37235 (United States); Rogers, Bridget R. [Vanderbilt Institute of Nanoscale Science and Engineering, Vanderbilt University, Station B 350106, Nashville, TN 37235 (United States); Department of Chemical and Biomolecular Engineering, Vanderbilt University, VU Station B 351604, Nashville, TN 37235 (United States); Rosenthal, Sandra J. [Department of Chemistry, Vanderbilt University, Station B 351822, Nashville, TN 37235 (United States); Vanderbilt Institute of Nanoscale Science and Engineering, Vanderbilt University, Station B 350106, Nashville, TN 37235 (United States); Department of Chemical and Biomolecular Engineering, Vanderbilt University, VU Station B 351604, Nashville, TN 37235 (United States); Department of Physics and Astronomy, Vanderbilt University, 1807 Station B, Nashville, TN 37235 (United States); Department of Pharmacology, Vanderbilt University, 1211 Medical Center Drive, Nashville, TN 37232 (United States)

    2010-06-15

    SnS nanocrystals (NCs) were synthesized in oleylamine using the hot-injection technique from tin(II) chloride and diethylammonium diethyldithiocarbamate in the presence of dodecanethiol. X-ray diffraction (XRD) and high resolution transmission electron microscopy (HRTEM) analysis revealed the formation of single crystalline SnS NCs with sizes finely controlled by synthetic conditions. Rutherford backscattering spectrometry (RBS) and X-ray photoelectron spectroscopy (XPS) investigation confirmed the formation of SnS in a nearly stoichiometric ratio with additional evidence of the SnS NCs surface oxidation when NCs were stored in the air. Optical absorption measurements showed a shift in band gap energy of SnS NCs towards larger values with decreasing particle sizes. SnS NCs were successfully transferred into water using cetyltrimethylammonium bromide and Vitamin E as surfactants. These VIS/NIR absorbing SnS NCs should have widespread applications in the construction of efficient photoelectronic devices and probes in bioimaging due to their unique optoelectronic properties and low toxicity.

  7. Mechanothermal synthesis of SrSnO{sub 3}

    Energy Technology Data Exchange (ETDEWEB)

    Berbenni, Vittorio; Milanese, Chiara; Bruni, Giovanna; Girella, Alessandro; Marini, Amedeo [Pavia Univ. (Italy). Sezione di Chimica Fisica

    2014-03-15

    The synthesis of strontium metastannate (SrSnO{sub 3}) has been performed by coupling mechanical activation with thermal activation of SnC{sub 2}O{sub 4}-SrCO{sub 3} mixtures. The solid-state reaction has been studied by TG-DSC analysis and powder X-ray diffraction. By annealing experiments performed on physical mixtures (no mechanical activation) it has been assessed that the formation of SrSnO{sub 3} occurs through the intermediate Sr{sub 2}SnO{sub 4} and is complete only after annealing at 1400 C. By performing the annealing experiments on activated mixtures it has been established that the formation of SrSnO{sub 3} takes place directly at temperatures between 800 and 1000 C. The SrSnO{sub 3} samples obtained at 800 and 900 C show, by TG analysis, mass loss processes that suggest that SrSnO{sub 3} obtained at these temperatures absorbs H{sub 2}O and CO{sub 2} from the air so that its use as gas sensor can be envisaged. This is no longer true for the sample obtained at 1000 C or above.

  8. 136Sn and three-body forces

    Indian Academy of Sciences (India)

    M Saha Sarkar; S Sarkar

    2015-09-01

    New experimental data on 2+ energies of 136,138Sn confirm the trend of lower 2+ excitation energies of even–even tin isotopes with > 82 compared to those with N < 82. However, none of the theoretical predictions using both realistic and empirical interactions can reproduce experimental data on excitation energies as well as the transition probabilities ((2; 6+ → 4+)) of these nuclei, simultaneously, apart from the ones whose matrix elements have been changed empirically to produce mixed seniority states by weakening the pairing. We have shown that the experimental result also shows good agreement with the theory in which three-body forces have been included in a realistic interaction. The new theoretical results on transition probabilities are discussed to identify the experimental quantities which will clearly distinguish between different views.

  9. Axions and SN 1987A: Axion trapping

    Science.gov (United States)

    Burrows, Adam; Ressell, M. Ted; Turner, Michael S.

    1990-01-01

    If an axion of mass between about 10(exp -3) and 10 eV exists, axion emission would have significantly affected the cooling of the nascent neutron star associated with SN 1987A. For an axion of mass greater than about 10(exp -2) eV axions would, like neutrinos, have a mean-free path that is smaller than the size of a neutron star, and thus would become trapped and radiated from an axion sphere. The trapping regime is treated by using numerical models of the initial cooling of a hot neutron star that incorporate a diffusion approximation for axion-energy transport. The axion opacity due to inverse nucleon-nucleon, axion bremsstrahlung is computed; and then the numerical models are used to calculate the integrated axion luminosity, the temperature of the axion sphere, and the effect of axion emission on the neutrino bursts detected by the Kamiokande II (KII) and Irvine-Michigan-Brookhaven (IMB) water-Cherenkov detectors. The larger the axion mass, the stronger the trapping and the smaller the axion luminosity. The estimate of the axion mass is confirmed above which trapping is so strong that axion emission does not significantly affect the neutrino burst. Based upon the neutrino-burst duration - the most sensitive barometer of axion cooling - it is concluded that for an axion mass greater than about 3 eV axion emission would not have had a significant effect on the neutrino bursts detected by KII and IMB. It is strongly suggested that an axion with mass in the interval 10(exp -3) to 3 eV is excluded by the observation of neutrinos from SN 1987A.

  10. Microwave study of superconducting Sn films above and below percolation

    Science.gov (United States)

    Beutel, Manfred H.; Ebensperger, Nikolaj G.; Thiemann, Markus; Untereiner, Gabriele; Fritz, Vincent; Javaheri, Mojtaba; Nägele, Jonathan; Rösslhuber, Roland; Dressel, Martin; Scheffler, Marc

    2016-08-01

    The electronic properties of superconducting Sn films ({T}{{c}}≈ 3.8 {{K}}) change significantly when reducing the film thickness down to a few {nm}, in particular close to the percolation threshold. The low-energy electrodynamics of such Sn samples can be probed via microwave spectroscopy, e.g. with superconducting stripline resonators. Here we study Sn thin films, deposited via thermal evaporation—ranging in thickness between 38 and 842 {nm}—which encompasses the percolation transition. We use superconducting Pb stripline resonators to probe the microwave response of these Sn films in a frequency range between 4 and 20 {GHz} at temperatures from 7.2 down to 1.5 {{K}}. The measured quality factor of the resonators decreases with rising temperature due to enhanced losses. As a function of the sample thickness we observe three regimes with significantly different properties: samples below percolation, i.e. ensembles of disconnected superconducting islands, exhibit dielectric properties with negligible losses, demonstrating that macroscopic current paths are required for appreciable dynamical conductivity of Sn at GHz frequencies. Thick Sn films, as the other limit, lead to low-loss resonances both above and below T c of Sn, as expected for bulk conductors. But in an intermediate thickness regime, just above percolation and with labyrinth-like morphology of the Sn, we observe a quite different behavior: the superconducting state has a microwave response similar to the thicker, completely covering films with low microwave losses; but the metallic state of these Sn films is so lossy that resonator operation is suppressed completely.

  11. 关于柯西sn-对称空间的一个注记%A Note on Cauchy sn-Symmetric Spaces

    Institute of Scientific and Technical Information of China (English)

    陈内萍

    2013-01-01

    It is proved that a space is a Cauchy sn-symmetric space if and only if it has a sn-devel-opment consisting of cs-covers ( or sn-covers) if and only if it is a sequence-covering π-image of a metric space .%证明了一个空间是柯西sn-对称空间当且仅当它有一个由cs-复盖或sn-复盖组成sn-展开当且仅当它是度量空间的序列复盖π映射。

  12. Spark plasma-sintered Sn-based intermetallic alloys and their Li-storage studies

    CSIR Research Space (South Africa)

    Nithyadharseni, P

    2016-06-01

    Full Text Available In the present study, SnSb, SnSb/Fe, SnSb/Co, and SnSb/Ni alloy powders processed by co-precipitation were subjected to spark plasma-sintering (SPS) at 400 °C for 5 min. The compacts were structurally and morphologically characterized by X...

  13. Shell Model Description of Neutron-Deficient Sn Isotopes

    Institute of Scientific and Technical Information of China (English)

    Erdal Dikmen

    2009-01-01

    The shell model calculations in the sdgh major shell for the neutron-deficient 106,107,108,109Sn isotopes have been carried out by using CD-Bonn and Nijmegenl two-body effective nucleon-nucleon interactions. The single-shell states and the corresponding matrix elements needed for describing Sn isotopes are reconstructed to calculate the coefficient of fractional parantage by reducing the calculation requirements. This reconstruction allows us to do the shell model calculations of the neutron deficient Sn isotopes in very reasonable time. The results are compared to the recent high-resolution experimental data and found to be in good agreement with experiments.

  14. Cs5Sn9(OH·4NH3

    Directory of Open Access Journals (Sweden)

    Ute Friedrich

    2014-06-01

    Full Text Available The title compound, pentacaesium nonastannide hydroxide tetraammonia, crystallized from a solution of CsSnBi in liquid ammonia. The Sn94− unit forms a monocapped quadratic antiprism. The hydroxide ion is surrounded by five caesium cations, which form a distorted quadratic pyramidal polyhedron. A three-dimensional network is formed by Cs—Sn [3.8881 (7 Å to 4.5284 (7 Å] and Cs—NH3 [3.276 (7–3.636 (7 Å] contacts.

  15. Thermodynamic Properties of Liquid Ag-Bi-Sn Alloys

    Science.gov (United States)

    Li, Zuoan; Knott, Sabine; Mikula, Adolf

    2007-01-01

    As a promising lead-free solder, the thermodynamic properties of the liquid ternary Ag-Bi-Sn system were investigated. Using an appropriate galvanic cell, the partial free energies of Sn in liquid Ag-Bi-Sn alloys were determined as a function of concentration and temperature. Thermodynamic properties were obtained for 27 alloys. Their composition was situated on three cross sections with the constant ratios of Ag:Bi = 2:1, 1:1, and 1:2. The integral Gibbs free energy and the integral enthalpy for the ternary system at 900 K were calculated by Gibbs Duhem integration.

  16. GeSn/Si Avalanche Photodetectors on Si substrates

    Science.gov (United States)

    2016-09-16

    Photodetectors on Si substrates Report Title In this project, firstly, the material growth of GeSn by chemical vapor deposition (CVD) system has been...between GeSn and other market dominating IR detectors in short-IR wavelength (First time reported the D* of a GeSn detector in the world). The D* of...Standard Form 298 (Rev 8/98) Prescribed by ANSI Std. Z39.18 Final Report W911NF-13-1-0196 64461-EL-DRP.43 479-575-7265 a. REPORT 14. ABSTRACT 16

  17. How is really decelerating the expansion of SN1993J?

    CERN Document Server

    Marcaide, J M; Pérez-Torres, M A; Guirado, J C; Lara, L; Ros, E; Diamond, P J; Mantovani, F; Shapiro, I I; Weiler, K W; Preston, R A; Schilizzi, R T; Sramek, R A; Trigilio, C; Van Dyk, S D; Whitney, A R

    2002-01-01

    SN1993J is to date the radio supernova whose evolution has been monitored in greatest detail and the one which holds best promise for a comprehensive theoretical-observational analysis. The shell-like radio structure of SN1993J has expanded in general accord with models of shock excited emission, showing almost circular symmetry for over 8 years, except for a bright feature at the south-eastern region of the shell that has been observed at every epoch. The spectrum of SN1993J has flattened from alpha =-1 to alpha =-0.67 (S_(\

  18. Simple Preparation of the Photocatalyst of Sn2+-doped Titania

    Institute of Scientific and Technical Information of China (English)

    Dao Rong LI; Ling Na SUN; Chang Wen HU

    2006-01-01

    Preparation method of photocatalyst, using TiCl4 and SnCl2 as raw material and photocatalytic activity of nano-scaled core-shell Sn2+-doped titania photocatalyst was studied in this paper. The as-prepared samples were studied by UV-Vis, XRD, XPS, TEM. The particles of Sn2+-doped TiO2 photocatalyst, calcined from 150 to 600 ℃ for 5 h, possesses narrow particle size distribution and the sample was composed of anatase phase. Its photocatalytic efficiency was investigated by UV irradiation.

  19. The rotational spectra, potential function, Born-Oppenheimer breakdown, and magnetic shielding of SnSe and SnTe.

    Science.gov (United States)

    Bizzocchi, Luca; Giuliano, Barbara M; Hess, Mareike; Grabow, Jens-Uwe

    2007-03-21

    The pure rotational spectra of 27 isotopic species of SnSe and SnTe have been measured in the frequency range of 5-24 GHz using a Fabry-Perot-type resonator pulsed-jet Fourier-transform microwave spectrometer. Gaseous samples of both chalcogenides were prepared by laser ablation of suitable target rods and were stabilized in supersonic jets of Ar. Global multi-isotopolog analyses of all available high-resolution data produced spectroscopic Dunham parameters Y01, Y11, Y21, Y31, Y02, and Y12 for both species, as well as Born-Oppenheimer breakdown (BOB) coefficients delta01 for Sn, Se, and Te. A direct fit of the same data sets to an appropriate radial Hamiltonian yielded analytic potential energy functions and BOB radial functions for the X 1Sigma+ electronic state of both SnSe and SnTe. Additionally, the magnetic hyperfine interaction produced by the dipolar nuclei 119Sn, 117Sn, 77Se, and 125Te was observed, yielding first determinations of the corresponding spin-rotation coupling constants.

  20. Gap states in the electronic structure of SnO2 single crystals and amorphous SnOx thin films

    Science.gov (United States)

    Haeberle, J.; Machulik, S.; Janowitz, C.; Manzke, R.; Gaspar, D.; Barquinha, P.; Schmeißer, D.

    2016-09-01

    The electronic structure of a SnO2 single crystal is determined by employing resonant photoelectron spectroscopy. We determine the core level, valence band, and X-ray absorption (XAS) data and compare these with those of amorphous SnOx thin films. We find similar properties concerning the data of the core levels, the valence band features, and the absorption data at the O1s edge. We find strong signals arising from intrinsic in-gap states and discuss their origin in terms of polaronic and charge-transfer defects. We deduce from the XAS data recorded at the Sn3d edge that the Sn4d10 ground state has contributions of 4d9 and 4d8 states due to configuration interaction. We identify localized electronic states depending on the strength of the 4d-5s5p interaction and of the O2p-to-Sn4d charge-transfer processes, both appear separated from the extended band-like states of the conduction band. For the amorphous SnOx thin films, significant differences are found only in the absorption data at the Sn3d-edge due to a stronger localization of the in-gap states.

  1. Phase Transformations during the Reaction Heat Treatment of Internal Tin Nb$_{3}$Sn Strands with High Sn Content

    CERN Document Server

    Scheuerlein, C; Arnau-Izquierdo, G; Buta, F

    2008-01-01

    The phase transformations that occur during the reaction heat treatment of Nb3Sn superconductors depend on the overall elemental composition of the strand sub-elements. In the case of modern high Jc strands with a relatively low Cu content, liquid phases are present during large temperature intervals and phases that can be detrimental for the microstructural and microchemical homogeneity of the fully reacted strand are formed. We report synchrotron x-ray diffraction measurements during in-situ reaction heat treatment of a state-of-the-art high Jc Nb3Sn Internal Tin (IT) strand. In this strand Cu3Sn is formed upon Cu6Sn5 decomposition at 415 °C, a Sn-rich ternary Cu-Nb-Sn phase is detected in the approximate temperature interval 345-575°C and NbSn2 is present in the temperature interval 545-630°C. The formation of voids in the strand sub-elements has been monitored by synchrotron micro-tomography during in-situ reaction heat treatment.

  2. Band alignments at strained Ge1‑x Sn x /relaxed Ge1‑y Sn y heterointerfaces

    Science.gov (United States)

    Lan, H.-S.; Liu, C. W.

    2017-04-01

    Type-I, type-II, reverse type-I, and reverse type-II band alignments are found theoretically in strained Ge1‑x Sn x (0  ⩽  x  ⩽  0.3) grown on relaxed Ge1‑y Sn y substrates (0  ⩽  y  ⩽  0.3) using the model-solid theory. The prerequisite bandgaps, and energy difference between the top valence band edge and the average valence band position of GeSn are obtained by the nonlocal empirical pseudopotential method. For the indirect-gap (L valleys) Ge1‑x Sn x on relaxed Ge1‑y Sn y , the band alignments are type-I and reverse type-I under biaxial compressive strain (x  >  y) and biaxial tensile strain (x  <  y), respectively. For the direct-gap (Γ valley) Ge1‑x Sn x on relaxed Ge1‑y Sn y , the biaxial compressive strain yields type-I and type-II alignment, while the biaxial tensile strain yields reverse type-I and reverse type-II alignments.

  3. Structural Behavior of Pt-Sn Supported on MgO

    Energy Technology Data Exchange (ETDEWEB)

    Nava, N. [Instituto Mexicano del Petroleo, Simulacion Molecular (Mexico); Morales, M. A.; Vanoni, W. [Centro Brasileiro de Pesquisas Fisicas (Brazil); Toledo, J. A. [Instituto Mexicano del Petroleo, Simulacion Molecular (Mexico); Baggio-Saitovitch, E. [Centro Brasileiro de Pesquisas Fisicas (Brazil); Viveros, T. [Universidad Autonoma Metropolitana-Iztapalapa, area de Ingenieria Quimica (Mexico)

    2001-05-15

    Pt-Sn supported on magnesia and alumina were characterized, before and after treatment with hydrogen, by Moessbauer spectroscopy and X-ray diffraction. For the calcined samples on both supports tin is present as SnO{sub 2} and platinum as metal. After reduction with hydrogen, platinum and tin diffuse into the magnesia lattice to form a solid solution. On alumina Sn(IV), Sn(II), Sn(0), Pt, Pt{sub 3}Sn, PtSn and PtSn{sub 2} alloys are formed. The SnO interacts strongly with the alumina support. The catalytic activity of both Pt-Sn catalysts is strongly affected by the support. On alumina the dehydrogenation of cyclohexane is very high, whereas that on magnesia is almost non-active.

  4. Isothermal section at 1400 deg. C of the Ti-Zr-Sn system

    Energy Technology Data Exchange (ETDEWEB)

    Saltykov, V.A. [I.N. Frantsevich Institute for Problems of Materials Science, Str. Krzhyzhanovsky, 3, Kiev 03142 (Ukraine)], E-mail: ssaltykov@ipms.kiev.ua; Meleshevich, K.A.; Samelyuk, A.V.; Verbytska, O.M.; Bulanova, M.V. [I.N. Frantsevich Institute for Problems of Materials Science, Str. Krzhyzhanovsky, 3, Kiev 03142 (Ukraine)

    2008-07-14

    By the methods of X-ray diffraction, metallography and microprobe examinations the character of phase equilibria at 1400 deg. C is studied for the Ti-(Ti,Zr){sub 5}Sn{sub 3}-Zr region of the Ti-Zr-Sn system. The isothermal section at 1400 deg. C is constructed. This is similar to the solidus surface and is characterized by two 3-phase regions: <{beta}Ti,Zr> + Ti{sub 3}Sn + (Ti,Zr){sub 5}Sn{sub 3} and Ti{sub 3}Sn + Ti{sub 2}Sn + (Ti,Zr){sub 5}Sn{sub 3}. Solubility of Sn in <{beta}Ti,Zr> solid solution is between 10 and 15 at.% Sn. Solubility of zirconium in Ti{sub 3}Sn is about 12 at.%.

  5. Defect-free high Sn-content GeSn on insulator grown by rapid melting growth

    Science.gov (United States)

    Liu, Zhi; Cong, Hui; Yang, Fan; Li, Chuanbo; Zheng, Jun; Xue, Chunlai; Zuo, Yuhua; Cheng, Buwen; Wang, Qiming

    2016-12-01

    GeSn is an attractive semiconductor material for Si-based photonics. However, large lattice mismatch between GeSn and Si and the low solubility of Sn in Ge limit its development. In order to obtain high Sn-content GeSn on Si, it is normally grown at low temperature, which would lead to inevitable dislocations. Here, we reported a single-crystal defect-free graded GeSn on insulator (GSOI) stripes laterally grown by rapid melting growth (RMG). The Sn-content reaches to 14.2% at the end of the GSOI stripe. Transmission electron microscopy observation shows the GSOI stripe without stacking fault and dislocations. P-channel pseudo metal-oxide-semiconductor field effect transistors (MOSFETs) and metal-semiconductor-metal (MSM) Schottky junction photodetectors were fabricated on these GSOIs. Good transistor performance with a low field peak hole mobility of 402 cm2/Vs is obtained, which indicates a high-quality of this GSOI structure. Strong near-infrared and short-wave infrared optical absorption of the MSM photodetectors at 1550 nm and 2000 nm were observed. Owing to high Sn-content and defect-free, responsivity of 236 mA/W@-1.5 V is achieved at 1550 nm wavelength. In addition, responsivity reaches 154 mA/W@-1.5 V at 2000 nm with the optical absorption layer only 200 nm-thick, which is the highest value reported for GeSn junction photodetectors until now.

  6. Evaporation Mechanism of Sn and SnS from Liquid Fe: Part I: Experiment and Adsorption of S on Reaction Site

    Science.gov (United States)

    Jung, Sung-Hoon; Kang, Youn-Bae; Seo, Jeong-Do; Park, Joong-Kil; Choi, Joo

    2015-02-01

    In order to evaluate feasibility of Sn-containing ferrous scrap recycling by evaporation of Sn, a number of liquid-gas experiments were carried out using an electromagnetic levitation melting technique. Rate of decrease of Sn concentration in liquid steel droplets by evaporation in Ar-H2 gas mixture was determined at 1873 K (1600 °C). Evaporation rate of the Sn under various conditions (various flow rates of the gas mixture, initial S concentration, [pct Sn]0) was examined using previously reported rate equations. Increasing flow rate increased the evaporation rate of Sn initially, but the rate became constant at higher flow rate, which indicates that the rate-controlling step is the chemical reaction at the liquid/gas interface. Increasing initial S concentration significantly increased the evaporation rate of Sn, which is in good agreement with previous understanding that Sn could be evaporated as SnS(g). It was found in the present study that neither a simple first-order reaction (rate proportional to [pct Sn]) nor a second-order reaction (rate proportional to [pct Sn] × [pct S]) could account for the Sn evaporation under a chemical-reaction-controlled regime. It is proposed in the present study that surface adsorption of S should be taken into account in order to interpret the evaporation rate of Sn in such a way that S blocks available sites for SnS evaporation on the liquid steel. The ideal Langmuir isotherm was applied in order to better represent evaporation rate constant k SnS as a function of [pct S] (0.06 reaction Sn i + S i = SnSi(g), , is 2.57 × 10-8 m4 mol-1 s-1.

  7. Comparative study of SnS recrystallization in molten CdI{sub 2}, SnCl{sub 2}and KI

    Energy Technology Data Exchange (ETDEWEB)

    Timmo, Kristi; Kauk-Kuusik, Marit; Pilvet, Maris; Mikli, Valdek; Kaerber, Erki; Raadik, Taavi; Leinemann, Inga; Altosaar, Mare; Raudoja, Jaan [Department of Materials Science, Tallinn University of Technology, Tallinn (Estonia)

    2016-01-15

    In the present study, the recrystallization of polycrystalline SnS in different molten salts CdI{sub 2}, SnCl{sub 2} and KI as flux materials are presented. The recrystallization and growth of polycrystalline material in molten salts produces unique SnS monograin powders usable in monograin layer solar cells. XRD and Raman analysis revealed that single phase SnS powder can be obtained in KI at 740 C and in SnCl{sub 2} at 500 C. Long time heating of SnS in molten CdI{sub 2} was accompanied by chemical interaction between SnS and CdI{sub 2} that resulted in a mixture of CdS and Sn{sub 2}S{sub 3} crystals. SEM images showed that morphology of crystals can be controlled by the nature of the flux materials: needle-like Sn{sub 2}S{sub 3} together with round edged crystals of CdS in CdI{sub 2}, flat crystals of SnS with smooth surfaces in SnCl{sub 2} and well-formed SnS crystals with rounded edges in KI had been formed. The temperatures of phase transitions and/or the interactions of SnS and flux materials were determined by differential thermal analysis. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  8. A highly stable (SnOx-Sn)@few layered graphene composite anode of sodium-ion batteries synthesized by oxygen plasma assisted milling

    Science.gov (United States)

    Cheng, Deliang; Liu, Jiangwen; Li, Xiang; Hu, Renzong; Zeng, Meiqing; Yang, Lichun; Zhu, Min

    2017-05-01

    The (SnOx-Sn)@few layered graphene ((SnOx-Sn)@FLG) composite has been synthesized by oxygen plasma-assisted milling. Owing to the synergistic effect of rapid plasma heating and ball mill grinding, SnOx (1 ≤ x ≤ 2) nanoparticles generated from the reaction of Sn with oxygen are tightly wrapped by FLG nanosheets which are simultaneously exfoliated from expanded graphite, forming secondary micro granules. Inside the granules, the small size of the SnOx nanoparticles enables the fast kinetics for Na+ transfer. The in-situ formed FLG and residual Sn nanoparticles improve the electrical conductivity of the composite, meanwhile alleviate the aggregation of SnOx nanoparticles and relieve the volume change during the cycling, which is beneficial for the cyclic stability for the Na+ storage. As an anode material for sodium-ion batteries, the (SnOx-Sn)@FLG composite exhibits a high reversible capacity of 448 mAh g-1 at a current density of 100 mA g-1 in the first cycle, with 82.6% capacity retention after 250 cycles. Even when the current density increases to 1000 mA g-1, this composite retains 316.5 mAh g-1 after 250 cycles. With superior Na+ storage stability, the (SnOx-Sn)@FLG composite can be a promising anode material for high performance sodium-ion batteries.

  9. High-pressure / High-temperature studies on the stannides RENiSn (RE = Ce, Pr, Nd, Sm) and REPdSn (RE = La, Pr, Nd)

    Energy Technology Data Exchange (ETDEWEB)

    Riecken, J.F.; Hermes, W.; Rodewald, U.C.; Hoffmann, R.D.; Poettgen, R. [Muenster Univ. (Germany). Inst. fuer Anorganische und Analytische Chemie; Heymann, G.; Huppertz, H. [Innsbruck Univ. (Austria). Inst. fuer Allgemeine, Anorganische und Theoretische Chemie

    2008-06-15

    The normal-pressure (NP) orthorhombic TiNiSi-type (space group Pnma) stannides RENiSn (RE = Ce, Pr, Nd, Sm) and REPdSn (RE = La, Pr, Nd) were transformed into the corresponding hexagonal ZrNiAl-type (space group P anti 62m) high-pressure (HP) modifications under multianvil high-pressure (7.5 - 11.5 GPa) high-temperature (1100 - 1200 C) conditions. The structures of NP-CeNiSn, HP-PrNiSn, NP-NdNiSn, HP-LaPdSn, HP-PrPdSn, and HP-NdPdSn were refined from single crystal X-ray diffractometer data. Structural data for HP-SmNiSn were obtained from a Rietveld powder refinement. The high-pressure phase transition significantly changes the rare earth coordination, i. e. 4 RE + 6 Ni(Pd) + 6 Sn atoms for the NP-phases and 6 RE + 5 Ni(Pd) + 6 Sn atoms for the HP-phases. Susceptibility measurements of HP-PrPdSn and HP-NdPdSn reveal paramagnetic behavior with experimental magnetic moments of 3.61(1) {mu}{sub B}/Pr atom and 3.66(1) {mu}{sub B}/Nd atom, respectively. Low-temperature susceptibility and specific heat data point to inhomogeneous magnetism and spin-glass behavior, respectively. (orig.)

  10. SN 2009ip and SN 2010mc: Early and late-time behavior consistent with core-collapse Type IIn supernovae

    CERN Document Server

    Smith, Nathan; Prieto, Jose

    2013-01-01

    The recent supernova (SN) 2009ip had pre-SN eruptions followed by a final explosion in 2012. Its pre-SN observations make 2009ip the best observed SN progenitor in history, but the unprecedented data on the pre-SN activity has fueled debate about the nature of the 2012 explosion, whether it was a true SN or some extreme non-terminal event. In principle, both types of events could power shock interaction with circumstellar material (CSM), but here we argue that only a core-collapse SN provides a self-consistent explanation. Previously, we demonstrated that the light curves of SN 2009ip and another Type IIn, SN 2010mc, were nearly identical. Here we expand that comparison to their spectra as well, demonstrating that they are both consistent with known Type IIn events. The late-time spectra of SN 2009ip resemble those of the super-luminous SN 2006tf, and the underlying broad component in SN 2009ip's spectra resembles Type II-P events. The recent claim that the late-time spectrum of SN 2009ip is returning to its ...

  11. Investigation by Mössbauer spectroscopy of Sn redox transformations during H2/O2 titration on Pt/Al2O3Sn-Cl and Pt/Al2O3SnIn-Cl naphtha reforming catalysts

    Science.gov (United States)

    Jahel, Ali; Avenier, Priscilla; Lacombe, Sylvie; Olivier-Fourcade, Josette; Jumas, Jean-Claude

    2010-03-01

    Bimetallic Pt/Al2O3Sn-Cl and trimetallic Pt/Al2O3SnIn-Cl catalysts were characterized by H2/O2 double titration and 119Sn Mössbauer spectroscopy. The addition of Sn or both Sn and In to the monometallic Pt/Al2O3-Cl catalyst leads to an increase in the volume of chemisorbed O2 at each titration. For bimetallic and trimetallic catalysts the increase in the Pt dispersion, calculated from the second oxygen titre, abnormally surpasses the barrier of 100%. Characterization of samples obtained after each step of the H2/O2 titration sequence using 119Sn Mössbauer spectroscopy allowed to follow the redox transformations of Sn species suspected of contributing to O2 consumption. 119Sn Mössbauer spectra show that after reduction unalloyed metalic Sn and PtSn alloy phases are formed in bi- and trimetallic catalysts respectively. These metallic phases are oxidized upon the first oxygen titre into the so-called PtxSn(O) oxometalic phases. The index calculated from this titre thus expresses the Pt-Sn bimetallic character and is called the bimetallicity index (BMI). These latter phases further undergo reduction and regeneration (oxidation) upon the second O2 titre and thus contribute to the calculated Pt dispersion as well.

  12. Microstructural investigation and SnO nanodefects in spray-pyrolyzed SnO2 thin films

    DEFF Research Database (Denmark)

    Thanachayanont, Chanchana; Yordsri, Visittapong; Boothroyd, Chris

    2011-01-01

    Spray pyrolysis is one of the most cost-effective methods to prepare SnO2 films due to its ability to deposit large uniform area, low fabrication cost, simplicity and low deposition temperature. Conventionally, scanning electron microscopy (SEM) and X-Ray Diffraction (XRD) are routinely used...... to investigate microstructure and crystal structure of the SnO2 films. In the present study, the SnO2 films were deposited by spray pyrolysis at 300, 400 and 500°C and the microstructure of the 500°C film was further examined by using transmission electron microscopy (TEM) and convergent beam electron...

  13. Late-time spectral line formation in Type IIb supernovae, with application to SN 1993J, SN 2008ax, and SN 2011dh

    CERN Document Server

    Jerkstrand, A; Smartt, S J; Fransson, C; Sollerman, J; Taubenberger, S; Bersten, M; Spyromilio, J

    2014-01-01

    We investigate line formation processes in Type IIb supernovae (SNe) from 100 to 500 days post-explosion using spectral synthesis calculations. The modeling identifies the nuclear burning layers and physical mechanisms that produce the major emission lines, and the diagnostic potential of these. We compare the model calculations with data on the three best observed Type IIb SNe to-date - SN 1993J, SN 2008ax, and SN 2011dh. Oxygen nucleosynthesis depends sensitively on the main-sequence mass of the star and modeling of the [O I] 6300, 6364 lines constrains the progenitors of these three SNe to the M_ZAMS=12-16 M_sun range (ejected oxygen masses 0.3-0.9 M_sun), with SN 2011dh towards the lower end and SN 1993J towards the upper end of the range. The high ejecta masses from M_ZAMS >= 17 M_sun progenitors give rise to brighter nebular phase emission lines than observed. Nucleosynthesis analysis thus supports a scenario of low/moderate mass progenitors for Type IIb SNe, and by implication an origin in binary syste...

  14. Franz-Keldysh effect in GeSn pin photodetectors

    Energy Technology Data Exchange (ETDEWEB)

    Oehme, M., E-mail: oehme@iht.uni-stuttgart.de; Kostecki, K.; Schmid, M.; Kaschel, M.; Gollhofer, M.; Ye, K.; Widmann, D.; Koerner, R.; Bechler, S.; Kasper, E.; Schulze, J. [Institut für Halbleitertechnik, Universität Stuttgart, Pfaffenwaldring 47, 70569 Stuttgart (Germany)

    2014-04-21

    The optical properties and the Franz-Keldysh effect at the direct band gap of GeSn alloys with Sn concentrations up to 4.2% at room temperature were investigated. The GeSn material was embedded in the intrinsic region of a Ge heterojunction photodetector on Si substrates. The layer structure was grown by means of ultra-low temperature molecular beam epitaxy. The absorption coefficient as function of photon energy and the direct bandgap energies were determined. In all investigated samples, the Franz-Keldysh effect can be observed. A maximum absorption ratio of 1.5 was determined for 2% Sn for a voltage swing of 3 V.

  15. Beta-decay studies near {sup 100}Sn

    Energy Technology Data Exchange (ETDEWEB)

    Karny, M.; Janas, Z.; Miernik, K.; Plochocki, A.; Zylicz, J. [University of Warsaw, Institute of Experimental Physics, Warsaw (Poland); Batist, L. [St. Petersburg Nuclear Physics Institute, St. Petersburg (Russian Federation); Banu, A.; Becker, F.; Burkard, K.; Bruechle, W.; Doering, J.; Gorska, M.; Grawe, H.; Kirchner, R.; Mandal, S.; Mazzocchi, C.; Mukha, I.; Plettner, C.; Roeckl, E.; Schaedel, M. [Gesellschaft fuer Schwerionenforschung, Darmstadt (Germany); Blazhev, A. [GSI, Darmstadt (Germany); Sofia Univ. (Bulgaria); Faestermann, T. [Technische Universitaet Muenchen, Muenchen (Germany); Jungclaus, A. [Universidad Autonoma de Madrid, Departamento de Fisica Teorica, Madrid (Spain); Kavatsyuk, M.; Kavatsyuk, O. [GSI, Darmstadft (Germany); Taras Shevchenko Kiev National University, Kiev (Ukraine); La Commara, M.; Romoli, M. [Universita ' ' Federico II' ' and INFN Napoli, Dipartimento Scienze Fisiche, Napoli (Italy); Muralithar, S. [GSI, Darmstadt (Germany); Nuclear Science Center, New Delhi (India); Rykaczewski, K. [Oak Ridge National Laboratory, Oak Ridge, TN (United States); Schmidt, K. [Continental Teves AG and Co., Frankfurt am Main (Germany); Schwengner, R. [Forschungszentrum Rossendorf, Dresden (Germany)

    2005-09-01

    The {beta}-decay of {sup 102}Sn was studied by using high-resolution germanium detectors as well as a Total Absorption Spectrometer (TAS). A decay scheme has been constructed based on the {gamma}-{gamma} coincidence data. The total experimental Gamow-Teller strength B{sub GT}{sup exp} of {sup 102}Sn was deduced from the TAS data to be 4.2(9). A search for {beta}-delayed {gamma}-rays of {sup 100}Sn decay remained unsuccessful. However, a Gamow-Teller hindrance factor h = 2.2(3), and a cross-section of about 3nb for the production of {sup 100}Sn in fusion-evaporation reaction between {sup 58}Ni beam and {sup 50}Cr target have been estimated from the data on heavier tin isotopes. The estimated hindrance factor is similar to the values derived for lower shell nuclei. (orig.)

  16. The Competitive Relationships of SN2, SN1, E2, E1 Reactions in Organic Chemistry%有机化学中SN2,SN1,E2,E1反应的相互竞争关系

    Institute of Scientific and Technical Information of China (English)

    颜志明; 潘英明

    2014-01-01

    有机化学中的SN2,SN1,E2,E1反应在学习中有着重要的作用,同时也是学习中易混淆的知识点.通过总结它们的反应机理、反应影响因素和反应相互竞争关系图,并利用竞争关系图解答了一些典型考研真题,方便读者理解和掌握SN2,SN1,E2,E1反应的相互竞争关系.

  17. Effect of Sn on methane decomposition over Fe supported catalysts to produce carbon

    Energy Technology Data Exchange (ETDEWEB)

    Oliveira, Patricia F.; Ribeiro, Leandro P.; Rosmaninho, Marcelo G. [ICEx. Universidade Federal de Minas Gerais (UFMG), Departamento de Quimica (Brazil); Ardisson, Jose D. [Centro de Desenvolvimento de Tecnologia Nuclear (CDTN), Laboratorio de Fisica Aplicada (Brazil); Dias, Anderson [Universidade Federal de Ouro Preto (UFOP), Departamento de Quimica (Brazil); Lago, Rochel M., E-mail: rochel@qui.ufmg.br [ICEx. Universidade Federal de Minas Gerais (UFMG), Departamento de Quimica (Brazil)

    2011-11-15

    In this work, alumina-supported Sn containing Fe catalysts were investigated in CVD reactions (Chemical Vapor Deposition) using methane for carbon production. The catalysts were prepared with 10 wt.% of Fe (as Fe{sub 2}O{sub 3}) and 3, 6 and 12 wt.% of Sn (as SnO{sub 2}) supported on Al{sub 2}O{sub 3} named hereon Fe10Sn3A, Fe5Sn6A and Fe10Sn12A, respectively. These catalysts were characterized by SEM, TPCVD, TPR, TG, Raman, XRD and {sup 57}Fe and {sup 119}Sn Moessbauer spectroscopy. Methane reacts with Fe10A catalyst (without Sn) in the temperature range 680-900 Degree-Sign C to produce mainly Fe{sup 0}, Fe{sub 3}C and 20 wt.% of carbon deposition. TPR and TPCVD clearly showed that Sn strongly hinders the CH{sub 4} reaction over Fe catalyst. {sup 57}Fe Moessbauer suggested that in the presence of Sn the reduction of Fe{sup + 3} by methane becomes very difficult. {sup 119}Sn Moessbauer showed Sn{sup + 4} species strongly interact with metallic iron after CVD, producing iron-tin phases such as Fe{sub 3}SnC and FeSn{sub 2}. This interaction Sn-Fe increases the CVD temperatures and decreases the carbon yield leading to the production of more organized forms of carbon such as carbon nanotubes, nanofibers and graphite.

  18. Effect of Sn on methane decomposition over Fe supported catalysts to produce carbon

    Science.gov (United States)

    Oliveira, Patrícia F.; Ribeiro, Leandro P.; Rosmaninho, Marcelo G.; Ardisson, José D.; Dias, Anderson; Lago, Rochel M.

    2011-11-01

    In this work, alumina-supported Sn containing Fe catalysts were investigated in CVD reactions (Chemical Vapor Deposition) using methane for carbon production. The catalysts were prepared with 10 wt.% of Fe (as Fe2O3) and 3, 6 and 12 wt.% of Sn (as SnO2) supported on Al2O3 named hereon Fe10Sn3A, Fe5Sn6A and Fe10Sn12A, respectively. These catalysts were characterized by SEM, TPCVD, TPR, TG, Raman, XRD and 57Fe and 119Sn Mössbauer spectroscopy. Methane reacts with Fe10A catalyst (without Sn) in the temperature range 680-900°C to produce mainly Fe0, Fe3C and 20 wt.% of carbon deposition. TPR and TPCVD clearly showed that Sn strongly hinders the CH4 reaction over Fe catalyst. 57Fe Mössbauer suggested that in the presence of Sn the reduction of Fe + 3 by methane becomes very difficult. 119Sn Mössbauer showed Sn + 4 species strongly interact with metallic iron after CVD, producing iron-tin phases such as Fe3SnC and FeSn2. This interaction Sn-Fe increases the CVD temperatures and decreases the carbon yield leading to the production of more organized forms of carbon such as carbon nanotubes, nanofibers and graphite.

  19. Lattice Dynamic of Ag8SnSe6 Crystal

    Directory of Open Access Journals (Sweden)

    I.V. Semkiv

    2016-10-01

    Full Text Available The synthesis and structure properties of Ag8SnSe6 argyrodite are described. Argyrodite belongs to the orthorhombic space group Pmn21 with 15 atoms per primitive cell. Classification of the main phonon modes of crystal carried out. First-principles phonon-dispersion curves for argyrodite Ag8SnSe6 are calculated. Peak position in Raman spectra and IR-spectra was clarified.

  20. Simulating the Outer Nebula of SN 1987A

    Science.gov (United States)

    Fitzpatrick, Ben; Morris, Thomas; Podsiadlowski, Philipp

    2014-01-01

    As has been shown previously, the triple-ring nebula around SN 1987A can be understood as a direct consequence of the merger of two stars, some 20,000 yr before the explosion. Here we present new SPH simulations that also include the pre-merger mass loss and show that this may be able to explain other structures observed around SN 1987A, such as Napoleon's hat and various light echoes.

  1. Simultaneous Evaporation of Cu and Sn from Liquid Steel

    Science.gov (United States)

    Jung, Sung-Hoon; Kang, Youn-Bae

    2016-08-01

    In order to understand evaporation refining of tramp elements in molten ferrous scrap, Cu and Sn, a series of experiments were carried out using liquid-gas reaction in a levitation melting equipment. Effect of S and C, which are abundant in hot metal from ironmaking process, was examined and analyzed by employing a comprehensive evaporation kinetic model developed by the present authors (Jung et al. in Metall Mater Trans B 46B:250-258, 2014; Jung et al. in Metall Mater Trans B 46B:259-266, 2014; Jung et al. in Metall Mater Trans B 46B:267-277, 2014; Jung and Kang in Metall Mater Trans B 10.1007/s11663-016-0601-5, 2016). Evaporation of Cu and Sn were treated by evaporation of individual species such as Cu(g), CuS(g), Sn(g), and SnS(g), along with CS2(g). Decrease of Cu and Sn content in liquid steel was in good agreement with the model prediction. Optimum conditions of steel composition for the rapid evaporation of Cu and Sn were proposed by utilizing the model predictions.

  2. An Extremely Bright Echo Associated With SN 2002hh

    CERN Document Server

    Welch, D L; Campbell, Amy; Barlow, M J; Sugerman, Ben E K; Meixner, Margaret; Bank, S H R

    2007-01-01

    We present new, very late-time optical photometry and spectroscopy of the interesting Type II-P supernova, SN 2002hh, in NGC 6946. Gemini/GMOS-N has been used to acquire visible spectra at six epochs between 2004 August and 2006 July, following the evolution of the SN from age 661 to 1358 days. Few optical spectra of Type II supernovae with ages greater than one year exist. In addition, g'r'i' images were acquired at all six epochs. The spectral and photometric evolution of SN 2002hh has been very unusual. Measures of the brightness of this SN, both in the R and I bands as well as in the H-alpha emission flux, show no significant fading over an interval of nearly two years. The most straightforward explanation for this behavior is that the light being measured comes not only from the SN itself but also from an echo off of nearby dust. Echoes have been detected previously around several SNe but these echoes, at their brightest, were ~8 mag below the maximum brightness of the SN. At V~21 mag, the putative echo ...

  3. Shell Model Description of 102-108Sn Isotopes

    Science.gov (United States)

    Trivedi, T.; Srivastava, P. C.; Negi, D.; Mehrotra, I.

    2012-05-01

    We have performed shell model calculations for neutron deficient even 102-108Sn and odd 103-107Sn isotopes in sdg7/2h11/2 model space using two different interactions. The first set of interaction is due to Brown et al. and second is due to Hoska et al. The calculations have been performed using doubly magic 100Sn as core and valence neutrons are distributed over the single particle orbits 1g7/2, 2d5/2, 2d3/2, 3s1/2 and 1h11/2. In more recent experimental work for 101Sn [I. G. Darby et al., Phys. Rev. Lett. 105 (2010) 162502], the g.s. is predicted as 5/2+ with excited 7/2+ at 172 keV. We have also performed another two set of calculations by taking difference in single particle energies of 2d5/2 and 1g7/2 orbitals by 172 keV. The present state-of-the-art shell model calculations predict fair agreement with the experimental data. These calculations serve as a test of nuclear shell model in the region far from stability for unstable Sn isotopes near the doubly magic 100Sn core.

  4. Comparison of 120Sn(6He,6He)120Sn and 120Sn(alpha,alpha)120Sn elastic scattering and signatures of the 6He neutron halo in the optical potential

    CERN Document Server

    Mohr, P; Lichtenthäler, R; Pires, K C C; Guimarães, V; Lépine-Szily, A; Junior, D R Mendes; Arazi, A; Barioni, A; Morcelle, V; Morais, M C

    2010-01-01

    Cross sections of $^{120}$Sn($\\alpha$,$\\alpha$)$^{120}$Sn elastic scattering have been extracted from the $\\alpha$ particle beam contamination of a recent $^{120}$Sn($^6$He,$^6$He)$^{120}$Sn experiment. Both reactions are analyzed using systematic double folding potentials in the real part and smoothly varying Woods-Saxon potentials in the imaginary part. The potential extracted from the $^{120}$Sn($^6$He,$^6$He)$^{120}$Sn data may be used as the basis for the construction of a simple global $^6$He optical potential. The comparison of the $^6$He and $\\alpha$ data shows that the halo nature of the $^6$He nucleus leads to a clear signature in the reflexion coefficients $\\eta_L$: the relevant angular momenta $L$ with $\\eta_L \\gg 0$ and $\\eta_L \\ll 1$ are shifted to larger $L$ with a broader distribution. This signature is not present in the $\\alpha$ scattering data and can thus be used as a new criterion for the definition of a halo nucleus.

  5. Portuguese granites associated with Sn-W and Au mineralizations

    Directory of Open Access Journals (Sweden)

    Ana M.R. Neiva

    2002-01-01

    Full Text Available In northern and central Portugal, there are different tin-bearing granites. Most of them are of S-type, others have mixed characteristics of I-type and S-type granites and a few are of I-type. Tin-tungsten deposits are commonly associated with Hercynian tin-bearing S-type granites. Some quartz veins with wolframite are associated with an I-type granite, which has a low Sn content. In suites of tin-bearing S-type granitic rocks, Sn content increases as a function of the degree of fractional crystallization. Greisenizations of two-mica S-type granites associated with tin-tungsten mineralizations are accompanied by an increase in SiO2, H2O+, Sn, W, Nb, Ta, Rb, Zn, and Pb and decrease in MgO, Na2O, V, Sc,Zr, and Sr. The granite associated with the Jales gold deposit is of S-type and strongly differentiated like the tin-bearing S-type granites, but it has a very low Sn content. During fractional crystallization, Si, Rb, Sn, Pb, Au, As, Sb, and S increase. During increasing degree of hydrothermal alteration of this granite at the gold-quartz vein walls, there are progressive increases in K2O, H2O+, Sn, Cs, Cu, Pb, Au, Sb, As, and S.

  6. Modifications in SnS thin films by plasma treatments

    Energy Technology Data Exchange (ETDEWEB)

    Martinez, H., E-mail: hm@fis.unam.mx [Instituto de Ciencias Fisicas, Universidad Nacional Autonoma de Mexico, Apartado Postal 48-3, 62210 Cuernavaca, Morelos (Mexico); Avellaneda, D. [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon (Mexico)

    2012-02-01

    The present study shows the modifications of structural, optical and electrical characteristics that occur in tin sulfide (SnS) thin films treated in air and in nitrogen plasma at different pressure conditions. The films were obtained by the chemical bath deposition method, which results in SnS thin films with an orthorhombic crystalline structure, band gap (E{sub g}) of 1.1-1.2 eV, and electrical conductivities ({sigma}) in the order of 10{sup -6} {Omega}{sup -1}cm{sup -1}. The films treated with air plasma at pressures between 1 and 4 Torr, showed the presence of SnS{sub 2}, Sn{sub 2}S{sub 3}, and SnO{sub 2} phases, within the band gap values ranging from 0.9 to 1.5 eV. On the other hand, the films treated with nitrogen plasma presented the same phases, but showed a significant modification in the electrical conductivity, increasing from 10{sup -6} {Omega}{sup -1}cm{sup -1} (as-deposited) up to 10{sup -2}-10{sup -3} {Omega}{sup -1}cm{sup -1} (plasma treated). This result is a suitable range of conductivity for the improvement of the solar cells with SnS as an absorber material. Also, emission spectroscopy measurements were carried out in both air and nitrogen plasma treatments.

  7. Identification and quantification of Sn-based species in trimetallic Pt-Sn-In/Al2O3-Cl naphtha-reforming catalysts

    Science.gov (United States)

    Jumas, Jean-Claude; Sougrati, Moulay Tahar; Olivier-Fourcade, Josette; Jahel, Ali; Avenier, Priscilla; Lacombe, Sylvie

    2013-04-01

    Trimetallic Pt/Al2O3SnIn-Cl naphtha-reforming catalysts were prepared via co-precipitation route. Platinum and chlorine were introduced by the incipient wetness technique on the alumina support already doped with about 0.3 %wt of Sn to obtain about 0.3 %wt of Pt and 1.5 %wt of Cl. For the same Pt, Sn and Cl composition, indium loading ranged from 0.06 to 0.6 wt.%. The obtained catalysts were investigated by 119Sn Mössbauer spectroscopy between 95 and 300 K. Two Sn(IV), Sn(II) and Sn(0) environments have been identified and well characterized by their hyperfine parameters. The Lamb-Mössbauer factors have been determined for each environment and found to be 0.53, 0.27 and 0.31 for Sn(IV), Sn(II) and Sn(0) respectively. The addition of indium has been found to favour the formation of PtxSn alloys. 119Sn Mössbauer spectroscopy results show that addition of even small amount of In (0.06 wt.%) leads to the formation of a Pt3Sn alloy. At higher indium loadings, higher amounts of PtxSn alloys of almost equal Pt and Sn atomic concentrations were detected. The increasing formation of PtxSn alloys with higher indium loading is in good correlation with a decrease of catalyst's overall conversion and selectivity to C1 and C3-C4 paraffins and increase of isomerization selectivity.

  8. Buffer-Free GeSn and SiGeSn Growth on Si Substrate Using In Situ SnD4 Gas Mixing

    Science.gov (United States)

    Mosleh, Aboozar; Alher, Murtadha; Cousar, Larry C.; Du, Wei; Ghetmiri, Seyed Amir; Al-Kabi, Sattar; Dou, Wei; Grant, Perry C.; Sun, Greg; Soref, Richard A.; Li, Baohua; Naseem, Hameed A.; Yu, Shui-Qing

    2016-04-01

    Buffer-free GeSn and SiGeSn films have been deposited on Si via a cold-wall, ultra-high vacuum chemical vapor deposition reactor using in situ gas mixing of deuterated stannane, silane and germane. Material characterization of the films using x-ray diffraction and transmission electron microscopy shows crystalline growth with an array of misfit dislocation formed at the Si substrate interface. Energy dispersive x-ray maps attained from the samples show uniform incorporation of the elements. The Z-contrast map of the high-angle annular dark-field of the film cross section shows uniform incorporation along the growth as well. Optical characterization of the GeSn films through photoluminescence technique shows reduction in the bandgap edge of the materials.

  9. GeSn p-i-n photodetectors with GeSn layer grown by magnetron sputtering epitaxy

    Science.gov (United States)

    Zheng, Jun; Wang, Suyuan; Liu, Zhi; Cong, Hui; Xue, Chunlai; Li, Chuanbo; Zuo, Yuhua; Cheng, Buwen; Wang, Qiming

    2016-01-01

    We report an investigation of normal-incidence GeSn-based p-i-n photodetectors (PDs) with a Ge0.94Sn0.06 active layer grown using sputter epitaxy on a Ge(100) substrate. A low dark current density of 0.24 A/cm2 was obtained at a reverse bias of 1 V. A high optical responsivity of the Ge0.94Sn0.06/Ge p-i-n PDs at zero bias was achieved, with an optical response wavelength extending to 1985 nm. The temperature-dependent optical-response measurement was performed, and a clear redshift absorption edge was observed. This work presents an approach for developing efficient and cost-effective GeSn-based infrared devices.

  10. Characterization of RuO2+SnO2/Ti anodes with high SnO2-concentrations

    Institute of Scientific and Technical Information of China (English)

    王欣; 唐电; 周敬恩

    2004-01-01

    Two SnO2 + RuO2/Ti anodes with high SnO2-concentrations were prepared by painting, sintering and annealing through a sol-gel technique. The microstructure, morphology and grain size of coatings and the electrochemical properties of the anodes were investigated by XRD, DTA, SEM, TEM and CV. It is demonstrated that the anodic coatings consist of solid solution (Sn, X)O2 (X represents Ru or Ti) phases. The average grain size of the coatings is about less than 30 nm. When the annealing temperature increases from 450 ℃ to 600 ℃, the solid solutions decompose. The crystal of the coating is equiaxial. The morphology of TiO2 + SnO2/Ti coatings is a mixture of mud-flat cracking with a kind of agglomerated structure.

  11. Effect of Unsaturated Sn Atoms on Gas-Sensing Property in Hydrogenated SnO2 Nanocrystals and Sensing Mechanism.

    Science.gov (United States)

    Yuan, Y; Wang, Y; Wang, M; Liu, J; Pei, C; Liu, B; Zhao, H; Liu, S; Yang, H

    2017-04-27

    Sensing reaction mechanism is crucial for enhancing the sensing performance of semiconductor-based sensing materials. Here we show a new strategy to enhancing sensing performance of SnO2 nanocrystals by increasing the density of unsaturated Sn atoms with dangling bonds at the SnO2 surface through hydrogenation. A concept of the surface unsaturated Sn atoms serving as active sites for the sensing reaction is proposed, and the sensing mechanism is described in detail at atomic and molecule level for the first time. Sensing properties of other metal oxide sensors and catalytic activity of other catalysts may be improved by using the hydrogenation strategy. The concept of the surface unsaturated metal atoms serving as active sites may be very useful for understanding the sensing and catalytic reaction mechanisms and designing advanced sensing sensors, catalysts and photoelectronic devices.

  12. Structural phase transition, electronic and elastic properties of rocksalt structure SnAs and SnSb

    Science.gov (United States)

    Shrivastava, Deepika; Dabhi, Shweta D.; Jha, Prafulla K.; Sanyal, Sankar P.

    2016-10-01

    Pressure induced structural phase transitions in SnAs and SnSb have been studied using ab-initio density functional theory. The phase transition from NaCl to CsCl structure occurs at 29.8 GPa for SnAs, which agrees well with experimental data, while the same for SnSb is found to be 10.6 GPa, reported for the first time. The calculated ground state properties are in good agreement with available experimental and theoretical results. The electronic and bonding properties have also been analyzed. The elastic constants along with other secondary elasticity properties in B1 (NaCl-type) phase are also estimated at ambient as well as high pressure.

  13. Isospin effects on two-particle correlation functions in E/A=61 MeV Ar-36+Sn-112,Sn-124 reactions

    NARCIS (Netherlands)

    Ghetti, R; Avdeichikov, [No Value; Jakobsson, B; Golubev, P; Helgesson, J; Colonna, N; Tagliente, G; Wilschut, HW; Kopecky, S; Kravchuk, VL; Anderson, EW; Nadel-Turonski, P; Westerberg, L; Bellini, [No Value; Sperduto, ML; Sutera, C

    2004-01-01

    Small-angle, two-particle correlation functions have been measured for Ar-36+Sn-112,Sn-124 collisions at E/A=61 MeV. Total momentum gated neutron-proton (np) and proton-proton (pp) correlations are stronger for the Sn-124 target. Some of the correlation functions for particle pairs involving deutero

  14. Characteristics of a production route for filamentary Nb3Sn superconductors based on a reaction between niobium and Nb6Sn5

    NARCIS (Netherlands)

    Neijmeijer, W.L.; Kolster, B.H.

    1990-01-01

    Monofilamentary Nb3Sn superconductors have been made by application of a reaction between Nb6Sn5 powder and niobium. The layer thickness of Nb3Sn shows a parabolic time dependence, implying diffusion-controlled layer growth. The activation energy for diffusion is 268 kJ mol−1. The critical temperatu

  15. The gas density around SN 1006

    CERN Document Server

    Acero, F; Decourchelle, A

    2007-01-01

    The density of the ambient medium where the supernova remnant evolves is a relevant parameter for its hydrodynamical evolution, for the mechanism of particle acceleration, and for the emission at TeV energies. Using XMM-Newton X-ray observations, we present a study of the ambient medium density of the historical supernova remnant SN 1006. We modelled the post-shock thermal emission to constrain the ambient medium density. Our study is focused on the North-West and the South-East rims of the remnant, where the thermal emission dominates. We used a plane-parallel shock plasma model plus another component for the ejecta that are not negligible in the regions of our study. The importance of the synchrotron component is also studied. In order to improve statistics, we combined several observations of the remnant. The density found in the South-East rim is low, roughly 0.05 cm-3, and seems to be representative of the rest of the remnant. However, in the North-West rim (close to the bright optical filament), the den...

  16. Observations of SN2011fe with INTEGRAL

    CERN Document Server

    Isern, J; Bravo, E; Diehl, R; Knödlseder, J; Domingo, A; Hirschmann, A; Hoeflich, P; Lebrun, F; Renaud, M; Soldi, S; Elias--Rosa, N; Hernanz, M; Kulebi, B; Zhang, X; Badenes, C; Domínguezk, I; Garcia-Senz, D; Jordi, C; Lichti, G; Vedrenneb, G; Von Ballmoos, P

    2013-01-01

    SN2011fe was detected by the Palomar Transient Factory on August 24th 2011 in M101 few hours after the explosion. From the early spectra it was immediately realized that it was a Type Ia supernova thus making this event the brightest one discovered in the last twenty years. In this paper the observations performed with the instruments on board of INTEGRAL (SPI, IBIS/ISGRI, JEM-X and OMC) before and after the maximum of the optical light as well as the interpretation in terms of the existing models of $\\gamma$--ray emission from such kind of supernovae are reported. All INTEGRAL high-energy have only been able to provide upper limits to the expected emission due to the decay of $^{56}$Ni. These bounds allow to reject explosions involving a massive white dwarf in the sub--Chandrasekhar scenario. On the other hand, the optical light curve obtained with the OMC camera suggests that the event was produced by a delayed detonation of a CO white dwarf that produced $\\sim 0.5$ M$\\odot$ of $^{56}$Ni. In this particular...

  17. Constraining cosmological parameter with SN Ia

    Science.gov (United States)

    Indra Putri, A. N.; Wulandari, H. R. Tri

    2016-11-01

    A type I supemovae (SN Ia) is an exploding white dwarf, whose mass exceeds Chandrasekar limit (1.44 solar mass). If a white dwarf is in a binary system, it may accrete matter from the companion, resulting in an excess mass that cannot be balanced by the pressure of degenerated electrons in the core. SNe Ia are highly luminous objects, that they are visible from very high distances. After some corrections (stretch (s), colour (c), K-corrections, etc.), the variations in the light curves of SNe Ia can be suppressed to be no more than 10%. Their high luminosity and almost uniform intrinsic brightness at the peak light, i.e. MB ∼ -19, make SNe Ia ideal standard candle. Because of their visibility from large distances, SNe Ia can be employed as a cosmological measuring tool. It was analysis of SNe Ia data that indicated for the first time, that the universe is not only expanding, but also accelerating. This work analyzed a compilation of SNe Ia data to determine several cosmological parameters (H0, Ωm, Ωa, and w). It can be concluded from the analysis, that our universe is a flat, dark energy dominated universe, and that the cosmological constant A is a suitable candidate for dark energy.

  18. INSTABILITES IN NB3SN WIRES.

    Energy Technology Data Exchange (ETDEWEB)

    COOLEY, L.; GHOSH, A.

    2006-04-03

    High current-density Nb{sub 3}Sn strands made by internal-tin routes are not stable against flux jumps at low fields. Since flux jumps release heat, they can initiate quenching if thermal conductivity to the liquid helium is poor. To make matters worse, tin is a potent contaminant of copper, and reaction of strands to maximize performance leads to the loss of thermal conductivity. We discuss how the root of a solution of this problem lies in optimizing two parameters, RRR and J{sub c}, instead of J{sub c} alone. An important workaround for magnet designers is controlling the balance between performance and stability by reducing the temperature or time of the final heat treatment step. This provides ample J{sub c} while also keeping RRR high. Under these conditions, the instability current density threshold J{sub s} is higher than J{sub c}. Additional factors are also available to improve the management of instabilities, including new strand designs with smaller subelements or divided subelements.

  19. Optical and electrical characterizations of SnSe, SnS[sub 2] and SnSe[sub 2] single crystals

    Energy Technology Data Exchange (ETDEWEB)

    Julien, C.; Eddrief, M.; Samaras, I.; Balkanski, M. (Lab. de Physique des Solides, Pierre et Marie Curie Univ., 75 - Paris (France))

    1992-10-15

    This work reports a study of the optical and electrical properties of tin monoselenide SnSe and tin dichalcogenides SnX[sub 2] with X = S and Se. The semiconducting character of the single crystals is investigated by means of resistivity and Hall effect in the temperature range from 90 to 300 K. The energy gap data are obtained by absorption measurements. The far-infrared reflectance spectra of the tin chalcogenide compounds have been measured. The experimental data are fitted using a four-parameter dispersion model based on the factorized form of the dielectric function.

  20. Fabrication of GeSn-multiple quantum wells by overgrowth of Sn on Ge by using molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Oliveira, F. [Institute for Semiconductor Engineering, University of Stuttgart, 70569 Stuttgart (Germany); Centre of Physics, University of Minho, Campus de Gualtar, 4710-057 Braga (Portugal); Fischer, I. A.; Schulze, J. [Institute for Semiconductor Engineering, University of Stuttgart, 70569 Stuttgart (Germany); Benedetti, A. [CACTI, Univ. de Vigo, Campus Universitario Lagoas Marcosende 15, Vigo (Spain); Zaumseil, P. [IHP GmbH, Innovations for High Performance Microelectronics, Leibniz-Institut für innovative Mikroelektronik, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany); Cerqueira, M. F.; Vasilevskiy, M. I. [Centre of Physics, University of Minho, Campus de Gualtar, 4710-057 Braga (Portugal); Stefanov, S.; Chiussi, S. [Dpto. Fisica Aplicada, Univ. de Vigo, Rua Maxwell s/n, Campus Universitario Lagoas Marcosende, Vigo (Spain)

    2015-12-28

    We report on the fabrication and structural characterization of epitaxially grown ultra-thin layers of Sn on Ge virtual substrates (Si buffer layer overgrown by a 50 nm thick Ge epilayer followed by an annealing step). Samples with 1 to 5 monolayers of Sn on Ge virtual substrates were grown using solid source molecular beam epitaxy and characterized by atomic force microscopy. We determined the critical thickness at which the transition from two-dimensional to three-dimensional growth occurs. This transition is due to the large lattice mismatch between Ge and Sn (≈14.7%). By depositing Ge on top of Sn layers, which have thicknesses at or just below the critical thickness, we were able to fabricate ultra-narrow GeSn multi-quantum-well structures that are fully embedded in Ge. We report results on samples with one and ten GeSn wells separated by 5 and 10 nm thick Ge spacer layers that were characterized by high resolution transmission electron microscopy and X-ray diffraction. We discuss the structure and material intermixing observed in the samples.

  1. Magnetic and conventional shape memory behavior of Mn-Ni-Sn and Mn-Ni-Sn(Fe) alloys

    Science.gov (United States)

    Turabi, A. S.; Lázpita, P.; Sasmaz, M.; Karaca, H. E.; Chernenko, V. A.

    2016-05-01

    Magnetic and conventional shape memory properties of Mn49Ni42Sn9(at.%) and Mn49Ni39Sn9Fe3(at.%) polycrystalline alloys exhibiting martensitic transformation from ferromagnetic austenite into weakly magnetic martensite are characterized under compressive stress and magnetic field. Magnetization difference between transforming phases drastically increases, while transformation temperature decreases with the addition of Fe. Both Mn49Ni42Sn9 and Mn49Ni39Sn9Fe3 alloys show remarkable superelastic and shape memory properties with recoverable strain of 4% and 3.5% under compression at room temperature, respectively. These characteristics can be counted as extraordinary among the polycrystalline NiMn-based magnetic shape memory alloys. Critical stress for phase transformation was increased by 34 MPa in Mn49Ni39Sn9Fe3 and 21 MPa in Mn49Ni42Sn9 at 9 T, which can be qualitatively understood in terms of thermodynamic Clausius-Clapeyron relationships and in the framework of the suggested physical concept of a volume magnetostress.

  2. Fabrication of GeSn-multiple quantum wells by overgrowth of Sn on Ge by using molecular beam epitaxy

    Science.gov (United States)

    Oliveira, F.; Fischer, I. A.; Benedetti, A.; Zaumseil, P.; Cerqueira, M. F.; Vasilevskiy, M. I.; Stefanov, S.; Chiussi, S.; Schulze, J.

    2015-12-01

    We report on the fabrication and structural characterization of epitaxially grown ultra-thin layers of Sn on Ge virtual substrates (Si buffer layer overgrown by a 50 nm thick Ge epilayer followed by an annealing step). Samples with 1 to 5 monolayers of Sn on Ge virtual substrates were grown using solid source molecular beam epitaxy and characterized by atomic force microscopy. We determined the critical thickness at which the transition from two-dimensional to three-dimensional growth occurs. This transition is due to the large lattice mismatch between Ge and Sn (≈14.7%). By depositing Ge on top of Sn layers, which have thicknesses at or just below the critical thickness, we were able to fabricate ultra-narrow GeSn multi-quantum-well structures that are fully embedded in Ge. We report results on samples with one and ten GeSn wells separated by 5 and 10 nm thick Ge spacer layers that were characterized by high resolution transmission electron microscopy and X-ray diffraction. We discuss the structure and material intermixing observed in the samples.

  3. Influence of Sn on the magnetic ordering of Ni-Sn alloy synthesized using chemical reduction method

    Science.gov (United States)

    Dhanapal, K.; Narayanan, V.; Stephen, A.

    2016-05-01

    The Ni-Sn alloy was synthesized using borohydride assisted chemical reduction method. The composition of the synthesized alloy was determined using atomic absorption spectroscopy which revealed that the observed composition of Sn is high when compared to the initial composition. The ultrafine particles are clearly observed from field emission scanning electron microscope for all the sample. The X-ray diffraction measurement confirmed that the as-synthesized samples are of amorphous like nature while the samples annealed at 773 K showed crystalline nature. The Fourier transform infrared spectroscopy confirmed metallic bond stretching in the alloy samples. The crystallization and phase transition temperature was observed from differential scanning calorimetry. The shift in the crystallization temperature of Ni with increasing percentage of Sn was observed. The vibrating sample magnetometer was employed to understand the magnetic behavior of the Ni-Sn alloy. As-synthesized alloy samples showed paramagnetic nature while the annealed ones exhibit the soft ferromagnetic, antiferromagnetic and paramagnetic nature. The saturation magnetization value and magnetic ordering in the Ni-Sn alloys depend on the percentage of Sn present in the alloy.

  4. Beta Decay of the Proton-Rich Nuclei 102Sn and 104Sn

    Energy Technology Data Exchange (ETDEWEB)

    Karny, M. [University of Warsaw; Batist, L. [St. Petersburg Nuclear Physics Institute; Banu, A. [Gesellschaft fur Schwerionenforschung (GSI), Germany; Becker, F. [Gesellschaft fur Schwerionenforschung (GSI), Germany; Blazhev, A. [Gesellschaft fur Schwerionenforschung (GSI), Germany; Brown, B. A. [Michigan State University, East Lansing; Bruchle, W. [Gesellschaft fur Schwerionenforschung (GSI), Germany; Doring, J. [Gesellschaft fur Schwerionenforschung (GSI), Germany; Faestermann, T. [Technische Universitat Munchen; Gorska, M. [Gesellschaft fur Schwerionenforschung (GSI), Germany; Grawe, H. [GSI-Hemholtzzentrum fur Schwerionenforschung, Darmstadt, Germany; Janas, Z. [University of Warsaw; Jungclaus, A. [Universidad Autonoma de Madrid, Madrid; Kavatsyuk, M. [Gesellschaft fur Schwerionenforschung (GSI), Germany; Kavatsyuk, O. [Gesellschaft fur Schwerionenforschung (GSI), Germany; Kirchner, R. [Gesellschaft fur Schwerionenforschung (GSI), Germany; La Commara, M. [Universita Federico II and INFN Napoli; Mandal, S. [Gesellschaft fur Schwerionenforschung (GSI), Germany; Mazzocchi, C. [Gesellschaft fur Schwerionenforschung (GSI), Germany; Miernik, K. [University of Warsaw; Mukha, I. [Gesellschaft fur Schwerionenforschung (GSI), Germany; Muralithar, S. [University of Warsaw; Plettner, C. [Gesellschaft fur Schwerionenforschung (GSI), Germany; Plochocki, A. [University of Warsaw; Roeckl, E. [Gesellschaft fur Schwerionenforschung (GSI), Germany; Romoli, M. [Universita Federico II and INFN Napoli; Rykaczewski, Krzysztof Piotr [ORNL; Schadel, M. [Gesellschaft fur Schwerionenforschung (GSI), Germany; Schmidt, K. [University of Warsaw; Schwengner, R. [University of Warsaw; Zylicz, J. [University of Warsaw

    2006-01-01

    The {beta} decays of {sup 102}Sn and {sup 104}Sn were studied by using high-resolution germanium detectors as well as a Total Absorption Spectrometer (TAS). For {sup 104}Sn, with three new {beta}-delayed {gamma}-rays identified, the total Gamow-Teller strength (BGT) value of 2.7(3) was obtained. For {sup 102}Sn, the {gamma}-{gamma} coincidence data were collected for the first time, allowing us to considerably extend the decay scheme. This scheme was used to unfold the TAS data and to deduce a BGT value of 4.2(8) for this decay. This result is compared to shell model predictions, yielding a hindrance factor of 3.6(7) in agreement with those obtained previously for {sup 98}Cd and {sup 100}In. Together with the latter two, {sup 102}Sn completes the triplet of Z {le} 50, N {ge} 50 nuclei with two proton holes, one proton hole and one neutron particle, and two neutron particles with respect to the doubly magic {sup 100}Sn core.

  5. Microstructural evolution and tensile properties of Sn-Ag-Cu mixed with Sn-Pb solder alloys

    Energy Technology Data Exchange (ETDEWEB)

    Wang Fengjiang [Department of Materials Science and Engineering and Materials Research Center, Missouri University of Science and Technology, Rolla, MO 65401 (United States); O' Keefe, Matthew [Department of Materials Science and Engineering and Materials Research Center, Missouri University of Science and Technology, Rolla, MO 65401 (United States)], E-mail: mjokeefe@mst.edu; Brinkmeyer, Brandon [Department of Materials Science and Engineering and Materials Research Center, Missouri University of Science and Technology, Rolla, MO 65401 (United States)

    2009-05-27

    The effect of incorporating eutectic Sn-Pb solder with Sn-3.0Ag-0.5Cu (SAC) Pb-free solder on the microstructure and tensile properties of the mixed alloys was investigated. Alloys containing 100, 75, 50, 25, 20, 15, 10, 5 and 0 wt% SAC, with the balance being Sn-37Pb eutectic solder alloy, were prepared and characterized. Optical and scanning electron microscopy were used to analyze the microstructures while 'mini-tensile' test specimens were fabricated and tested to determine mechanical properties at the mm length scale, more closely matching that of the solder joints. Microstructural analysis indicated that a Pb-rich phase formed and was uniformly distributed at the boundary between the Sn-rich grains or between the Sn-rich and the intermetallic compounds in the solder. Tensile results showed that mixing of the alloys resulted in an increase in both the yield and the ultimate tensile strength compared to the original solders, with the 50% SAC-50% Sn-Pb mixture having the highest measured strength. Initial investigations indicate the formation and distribution of a Pb-rich phase in the mixed solder alloys as the source of the strengthening mechanism.

  6. Identify and Quantify the Mechanistic Sources of Sensor Performance Variation Between Individual Sensors SN1 and SN2

    Energy Technology Data Exchange (ETDEWEB)

    Diaz, Aaron A.; Baldwin, David L.; Cinson, Anthony D.; Jones, Anthony M.; Larche, Michael R.; Mathews, Royce; Mullen, Crystal A.; Pardini, Allan F.; Posakony, Gerald J.; Prowant, Matthew S.; Hartman, Trenton S.; Edwards, Matthew K.

    2014-08-06

    This Technical Letter Report satisfies the M3AR-14PN2301022 milestone, and is focused on identifying and quantifying the mechanistic sources of sensor performance variation between individual, 22-element, linear phased-array sensor prototypes, SN1 and SN2, respectively. This effort constitutes an iterative evolution that supports the longer term goal of producing and demonstrating a pre-manufacturing prototype ultrasonic probe that possesses the fundamental performance characteristics necessary to enable the development of a high-temperature sodium-cooled fast reactor inspection system. The scope of the work for this portion of the PNNL effort conducted in FY14 includes performing a comparative evaluation and assessment of the performance characteristics of the SN1 and SN2 22 element PA-UT probes manufactured at PNNL. Key transducer performance parameters, such as sound field dimensions, resolution capabilities, frequency response, and bandwidth are used as a metric for the comparative evaluation and assessment of the SN1 and SN2 engineering test units.

  7. Synthesis and electrochemical properties of SnO2-polyaniline composite

    Institute of Scientific and Technical Information of China (English)

    HE Ze-qiang; XIONG Li-zhi; LIU Wen-ping; WU Xian-ming; CHEN Shang; HUANG Ke-long

    2008-01-01

    The SnO2-polyaniline(SnO2-PAn) composite was prepared by microemulsion polymerization method using aniline, ammonium peroxodisulfate and SnO2 as starting materials. The SnO2-PAn composite was characterized by X-ray diffractometer, scanning electron microscope and electrochemical techniques. The results show that PAn in the composites is amorphous. PAn formed in the reaction is deposited preferentially on the SnO2 particles, giving a SnO2-PAn composite, in which SnO2 is coated with PAn. SnO2-PAn composite shows a reversible capacity of 657.6 mA.h/g and the capacity loss per cycle is only 0.092% after 80 cycles, suggesting that SnO2-PAn composite is a promising anode material for lithium ion batteries.

  8. Graphene-SnO2 composites for highly efficient photocatalytic degradation of methylene blue under sunlight.

    Science.gov (United States)

    Seema, Humaira; Christian Kemp, K; Chandra, Vimlesh; Kim, Kwang S

    2012-09-07

    Graphene sheets decorated with SnO(2) nanoparticles (RGO-SnO(2)) were prepared via a redox reaction between graphene oxide (GO) and SnCl(2). Graphene oxide (GO) was reduced to graphene (RGO) and Sn(2+) was oxidized to SnO(2) during the redox reaction, leading to a homogeneous distribution of SnO(2) nanoparticles on RGO sheets. The scanning electron microscopy (SEM) and transmission electron microscopy (TEM) images show uniform distribution of the nanoparticles on the RGO surface and high-resolution transmission electron microscopy (HRTEM) shows an average particle size of 3-5 nm. The RGO-SnO(2) composite showed an enhanced photocatalytic degradation activity for the organic dye methylene blue under sunlight compared to bare SnO(2) nanoparticles. This result leads us to believe that the RGO-SnO(2) composite could be used in catalytic photodegradation of other organic dyes.

  9. Preparation of ternary Mg-Li-Sn alloys from molten salt by electrolysis

    Institute of Scientific and Technical Information of China (English)

    Peng CAO; Milin ZHANG; Wei HAN; Yongde YAN; Lijun CHEN

    2012-01-01

    Electrochemical behavior of Mg,Li and Sn on tungsten electrodes in LiCl-KCl-MgCl2-SnCl2 melts at 873 K was investigated.Cyclic voltammograms (CVs) showed that the underpotential deposition (UPD) of magnesium on pre-deposited tin leads to the formation of a Mg-Sn alloy,and the succeeding underpotential deposition of lithium on pre-deposited Mg-Sn alloy leads to the formation of a Mg-Li-Sn alloy.Chronopotentiometric measurements indicated that the codepositon of Mg,Li and Sn occurs at current densities more negative than -1.16 A.cm-2.X-ray diffraction (XRD) indicated that Mg2Sn phase is formed via galvanostatic electrolysis.The element Mg distributes homogeneously and Sn locates mainly on the grain boundaries in the MgLi-Sn alloy.

  10. Structural studies of two novel La-Sn compounds: La30Sn30 and La32Ni2Sn35

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Amie S. [Iowa State Univ., Ames, IA (United States)

    2005-01-01

    Two novel intermetallic compounds containing lanthanum and tin have been obtained for the first time. Single crystal structures of these two phases, La30Sn30 and La32Ni2Sn35 have been studied by X-ray crystallography. La30Sn30 is a new 1:1 binary containing La and Sn and has been refined in the Cmmm space group. This phase was made at high temperatures (<1200 C) from a loaded composition of La68Sn70. Unlike the reported 1:1 binary, LaSn which crystallizes in the Cmcm space group (only powder X-ray diffraction studies reported), La30Sn30 forms good crystals for structural determination. The crystal structure of La30Sn30 show Sn-Sn dimers and Sn-centered, face-sharing biaugmented triangular prisms composed of La atoms. La30Sn30 does not belong to any known structure-type. La32Ni2Sn35 was obtained in high yields at high temperatures (> 1200 C) and refined in the 14/mmm space group. It belongs to the USi structure type in which the Ni/Sn atoms occupy the Si sites, and La/Sn atoms occupy the U sites. The crystal structure of La32Ni2Sn35 consists of buckled sheets made from La-centered, corner-shared octahedra of Sn. These sheets are intraconnected through Ni-Sn-Ni bonds along the c-axis. The crystals are not air sensitive, unlike La30Sn30, which can be attributed to the presence of Ni in the crystal structure.

  11. SN2' versus SN2 reactivity: control of regioselectivity in conversions of Baylis-Hillman adducts.

    Science.gov (United States)

    Baidya, Mahiuddin; Remennikov, Grygoriy Y; Mayer, Peter; Mayr, Herbert

    2010-01-25

    TiCl(4)-induced Baylis-Hillman reactions of alpha,beta-unsaturated carbonyl compounds with aldehydes yield the (Z)-2-(chloromethyl)vinyl carbonyl compounds 5, which react with 1,4-diazabicyclo[2.2.2]octane (DABCO), quinuclidine, and pyridines to give the allylammonium ions 6. Their combination with less than one equivalent of the potassium salts of stabilized carbanions (e.g. malonate) yields methylene derivatives 8 under kinetically controlled conditions (S(N)2' reactions). When more than one equivalent of the carbanions is used, a second S(N)2' reaction converts 8 into their thermodynamically more stable allyl isomers 9. The second-order rate constants for the reactions of 6 with carbanions have been determined photometrically in DMSO. With these rate constants and the previously reported nucleophile-specific parameters N and s for the stabilized carbanions, the correlation log k (20 degrees C)=s(N + E) allowed us to calculate the electrophilicity parameters E for the allylammonium ions 6 (-19 reactions to proceed via an addition-elimination mechanism with a rate-determining addition step.

  12. Polycrystalline GeSn thin films on Si formed by alloy evaporation

    Science.gov (United States)

    Kim, Munho; Fan, Wenjuan; Seo, Jung-Hun; Cho, Namki; Liu, Shih-Chia; Geng, Dalong; Liu, Yonghao; Gong, Shaoqin; Wang, Xudong; Zhou, Weidong; Ma, Zhenqiang

    2015-06-01

    Polycrystalline GeSn thin films on Si substrates with a Sn composition up to 4.5% have been fabricated and characterized. The crystalline structure, surface morphology, and infrared (IR) absorption coefficient of the annealed GeSn thin films were carefully investigated. It was found that the GeSn thin films with a Sn composition of 4.5% annealed at 450 °C possessed a desirable polycrystalline structure according to X-ray diffraction (XRD) analyses and Raman spectroscopy analyses. In addition, the absorption coefficient of the polycrystalline GeSn thin films in the IR region was significantly better than that of the single crystalline bulk Ge.

  13. Impact of stoichiometry on the linear and nonlinear optical response of SnOx thin films

    Science.gov (United States)

    Li, Zhong-guo; Liang, Ling-yan; Cao, Hong-tao; Song, Ying-lin

    2017-06-01

    SnO is a promising p-type oxide semiconductor materials for applications such as transparent electronics and solar cells. However, further improvement of its performance is hindered by its diverse stoichiometry. We investigated the nonlinear and saturable absorption characteristics of pristine SnO and O-rich SnOx films by femtosecond degenerate pump-probe measurements at 515 nm. UV-Vis absorption data indicate bandgap blueshift with increasing oxygen concentration. Pristine SnO film exhibit saturable absorption while nonlinear absorption is observed in O-rich SnOx films. Our results shed light on the utilization of SnO in future device applications.

  14. Influence of Sn Doping on Phase Transformation and Crystallite Growth of TiO2 Nanocrystals

    Directory of Open Access Journals (Sweden)

    Guozhu Fu

    2014-01-01

    Full Text Available Sn doped TiO2 nanocrystals were synthesized via a single-step hydrothermal method and the influences of Sn doping on TiO2 have been investigated. It is found that Sn doping not only facilitates the crystal transfer from anatase to rutile but also facilitates the morphology change from sphere to rod. The states of Sn were studied by XPS and the creation of oxygen vacancies by Sn doping is confirmed. Moreover, the HRTEM results suggest that Sn facilitates preferential growth of resulting nanocrystals along (110 axis, which results in the formation of rod-like rutile nanocrystals.

  15. Stress induced growth of Sn nanowires in a single step by sputtering method

    Energy Technology Data Exchange (ETDEWEB)

    Yadav, A., E-mail: asha20yadav@gmail.com; Kothari, D. C. [Department of Physics, University of Mumbai, Vidyanagari, Santacruz (E), Mumbai 400 098 (India); Patel, N.; Miotello, A. [Dipartimento di Fisica, Università degli Studi di Trento, I-38123 Povo (Trento) (Italy)

    2015-06-24

    Sn nanowires in aluminum film have been synthesized in a single step by co-sputtering of Al and Sn targets. Due to immiscibility of Sn and Al, co-sputtering leads to generation of stress in the composite film. In order to attain thermodynamic equilibrium, Sn separates from Al and diffuses towards the grain boundaries. External perturbation due to ambient atmosphere leads to corrosion at the grain boundaries forming pits which provide path for Sn to evolve. Owing to this, extrusion of Sn nanowires from Al film occurs to release the residual stress in the film.

  16. Studies of Nuclei Close to 132Sn Using Single-Neutron Transfer Reactions

    Energy Technology Data Exchange (ETDEWEB)

    Jones, K. L. [University of Tennessee, Knoxville (UTK); Pain, S. D. [Rutgers University; Kozub, R. L. [Tennessee Technological University; Adekola, Aderemi S [ORNL; Bardayan, Daniel W [ORNL; Blackmon, Jeff C [ORNL; Catford, Wilton N [ORNL; Chae, K. Y. [University of Tennessee, Knoxville (UTK); Chipps, K. [Colorado School of Mines, Golden; Cizewski, J. A. [Rutgers University; Erikson, Luke [Colorado School of Mines, Golden; Gaddis, A. L. [Furman University; Greife, U. [Colorado School of Mines, Golden; Grzywacz, R. K. [University of Tennessee, Knoxville (UTK); Harlin, Christopher W [ORNL; Hatarik, Robert [Rutgers University; Howard, Joshua A [ORNL; James, J. [Colorado School of Mines, Golden; Kapler, R. [University of Tennessee, Knoxville (UTK); Krolas, W. [University of Warsaw; Liang, J Felix [ORNL; Ma, Zhanwen [ORNL; Matei, Catalin [Oak Ridge Associated Universities (ORAU); Moazen, Brian [University of Tennessee, Knoxville (UTK); Nesaraja, Caroline D [ORNL; O' Malley, Patrick [Rutgers University; Patterson, N. P. [University of Surrey, UK; Paulauskas, Stanley [University of Tennessee, Knoxville (UTK); Shapira, Dan [ORNL; ShrinerJr., J. F. [Tennessee Technological University; Sikora, M. [Rutgers University; Sissom, D. J. [Tennessee Technological University; Smith, Michael Scott [ORNL; Swan, T. P. [University of Surrey, UK; Thomas, J. S. [Rutgers University; Wilson, Gemma L [ORNL

    2009-01-01

    Neutron transfer reactions were performed in inverse kinematics using radioactive ion beams of 132Sn, 130Sn, and 134Te and deuterated polyethylene targets. Preliminary results are presented. The Q-value spectra for 133Sn, 131Sn and 135Te reveal a number of previously unobserved peaks. The angular distributions are compatible with the expected lf7/2 nature of the ground state of 133Sn, and 2p3/2 for the 3.4 MeV state in 131Sn.

  17. Motif of misfit layer compounds (SnS) xTS 2 (T=Ti, V, Nb, Ta) in the matrix of SnS 2

    Science.gov (United States)

    Abramov, S. P.

    1999-09-01

    The possibility of T (T=Ti, V, Nb, Ta) insertion in the layer matrix of SnS 2 (when T≪Sn) presents a special case of intercalation for the specific interactions that are inherent in the misfit layer compounds (SnS) xTS 2 ( x≈1). FT Raman spectra of T xSnS 2 (T=Ti, V) with x≪1 testify to the SnS 2 matrix that is invariable with respect to a charge transfer from T to SnS 2 layers as compared with the pristine SnS 2. At the same time the T xSnS 2 structure ( x≪1) taken as a whole has substantial features in the UV-IR spectra as compared with the pristine SnS 2 but is still a semiconductor at least in the case of T=Ti. This points out in the cluster manner of TS 2 insertion in the matrix of SnS 2 with the interactions that are typical of the misfit layer compounds (SnS) xTS 2 in which metallic conductivity occurs in the TS 2 layers.

  18. Nickel-stabilized hexagonal (Cu, Ni){sub 6}Sn{sub 5} in Sn-Cu-Ni lead-free solder alloys

    Energy Technology Data Exchange (ETDEWEB)

    Nogita, Kazuhiro [Materials Engineering, University of Queensland, Brisbane, QLD 4072 (Australia)], E-mail: k.nogita@uq.edu.au; Nishimura, Tetsuro [Nihon Superior Co., Ltd., NS Building, Suita 564-0063 (Japan)

    2008-07-15

    Cu{sub 6}Sn{sub 5} is an important intermetallic compound (IMC) in lead-free solder alloys. Cu{sub 6}Sn{sub 5} exists in two crystal structures with an allotropic transformation from monoclinic {eta}'-Cu{sub 6}Sn{sub 5} at temperatures lower than 186 deg. C to hexagonal {eta}-Cu{sub 6}Sn{sub 5}. A detailed analysis by transmission electron microscopy (TEM) in Sn-0.7 wt.% Cu-0.06 wt.% Ni reveals that when the Ni content in (Cu, Ni){sub 6}Sn{sub 5} is {approx}9 at.% Ni, the hexagonal allotrope of (Cu, Ni){sub 6}Sn{sub 5} becomes stable at room temperature.

  19. Four new chalcohalides, NaBa{sub 2}SnS{sub 4}Cl, KBa{sub 2}SnS{sub 4}Cl, KBa{sub 2}SnS{sub 4}Br and CsBa{sub 2}SnS{sub 4}Cl: Syntheses, crystal structures and optical properties

    Energy Technology Data Exchange (ETDEWEB)

    Li, Chao; Feng, Kai; Tu, Heng [Center for Crystal Research and Development, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190 (China); Key Laboratory of Functional Crystals and Laser Technology, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190 (China); University of the Chinese Academy of Sciences, Beijing 100049 (China); Yao, Jiyong, E-mail: jyao@mail.ipc.ac.cn [Center for Crystal Research and Development, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190 (China); Key Laboratory of Functional Crystals and Laser Technology, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190 (China); Wu, Yicheng [Center for Crystal Research and Development, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190 (China); Key Laboratory of Functional Crystals and Laser Technology, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190 (China)

    2015-07-15

    Four new chalcohalides, namely NaBa{sub 2}SnS{sub 4}Cl, KBa{sub 2}SnS{sub 4}Cl, KBa{sub 2}SnS{sub 4}Br, and CsBa{sub 2}SnS{sub 4}Cl, have been synthesized by the conventional high temperature solid-state reactions. They crystallize in three different space groups: space group I4/mcm for NaBa{sub 2}SnS{sub 4}Cl and KBa{sub 2}SnS{sub 4}Cl, Pnma for KBa{sub 2}SnS{sub 4}Br, and P2{sub 1}/c for CsBa{sub 2}SnS{sub 4}Cl. In all four compounds, the X{sup −} halide anions are only connected to six alkali metal or Ba cations, and the Sn atoms are only tetrahedrally enjoined to four S atoms. However, the M–X–Ba pseudo layers and the SnS{sub 4} tetrahedra are arranged in different ways in the three structural types, which demonstrates the interesting effect of ionic radii on the crystal structures. UV–vis–NIR spectroscopy measurements indicate that NaBa{sub 2}SnS{sub 4}Cl, KBa{sub 2}SnS{sub 4}Cl, KBa{sub 2}SnS{sub 4}Br, and CsBa{sub 2}SnS{sub 4}Cl have band gaps of 2.28, 2.30, 1.95, and 2.06 eV, respectively. - Graphical abstract: A new series of chalcohalides, NaBa{sub 2}SnS{sub 4}Cl, KBa{sub 2}SnS{sub 4}Cl, KBa{sub 2}SnS{sub 4}Br and CsBa{sub 2}SnS{sub 4}Cl have been obtained. They present three different space groups: NaBa{sub 2}SnS{sub 4}Cl and KBa{sub 2}SnS{sub 4}Cl in space group I4/mcm, KBa{sub 2}SnS{sub 4}Br in Pnma and CsBa{sub 2}SnS{sub 4}Cl in space group P2{sub 1}/c. UV–vis–NIR spectroscopy measurements indicate that NaBa{sub 2}SnS{sub 4}Cl, KBa{sub 2}SnS{sub 4}Cl, KBa{sub 2}SnS{sub 4}Br and CsBa{sub 2}SnS{sub 4}Cl have band gaps of 2.28, 2.30 1.95, and 2.06 eV, respectively. - Highlights: • Four new chalcohalides, NaBa{sub 2}SnS{sub 4}Cl, KBa{sub 2}SnS{sub 4}Cl, KBa{sub 2}SnS{sub 4}Br and CsBa{sub 2}SnS{sub 4}Cl were obtained. • They adopt three different structures owing to different ionic radii and elemental electronegativity. • NaBa{sub 2}SnS{sub 4}Cl, KBa{sub 2}SnS{sub 4}Cl, KBa{sub 2}SnS{sub 4}Br and CsBa{sub 2}SnS{sub 4}Cl have band gaps

  20. Laser Spectroscopy Studies in the Neutron-Rich Sn Region

    CERN Multimedia

    Obert, J

    2002-01-01

    We propose to use the powerful laser spectroscopy method to determine the magnetic moment $\\mu$ and the variation of the mean square charge radius ($\\delta\\,\\langle$r$_{c}^{2}\\,\\rangle$) for ground and long-lived isomeric states of the Sn isotopes from A=125 to the doubly-magic $^{132}$Sn isotope and beyond. For these neutron-rich Sn nuclei, numerous $\\delta\\,\\langle$r$^{2}_{c}\\,\\rangle$ curves have already been calculated and the predictions depend upon the effective interactions used. Therefore, a study of the effect of the shell closure N=82 on the $\\delta\\,\\langle$r$^{2}_{c}\\,\\rangle$ values in the Z=50 magic nuclei is of great interest, especially because $^{132}$Sn is located far from the stability valley. It will help to improve the parameters of the effective interactions and make them more suitable to predict the properties of exotic nuclei. \\\\ \\\\The neutron-rich Sn isotopes produced with an uranium carbide target, are ionized using either a hot plasma ion source or the resonant ionization laser ion ...

  1. Tests of Environmental Effects on SN Ia Production

    Science.gov (United States)

    Strolger, Louis-Gregory; van Dyk, Schuyler; Wolff, Schuyler; Campbell, Lachlan; Sadler, Suzanna; Pease, April

    2011-02-01

    The largely unknown type Ia supernova mechanism remains one of the largest sources of possible systematic uncertainty in achieving precise measures of dark energy. The host galaxy environments of SNe Ia provide our best opportunity for constraining the mechanism(s) of the SN Ia progenitor system, i.e., the stars involved, the incubation times, and the sensitivity of SNe Ia to changes in the local gas-phase metallicity. The latter can affect the luminosity of the resultant Ia event, and possibly the success in ultimately yielding a SN Ia event. We seek to solidify possible environmental trends in SN Ia rates from direct measures of host galaxy properties, using the sample collected by the Nearby Galaxies Supernova Search project. This study will uncover which has the greatest influence on SN Ia production efficiency: parent population age, rate of star-formation, or metallicity. Here, we propose to continue our analysis using the Mayall 4m + RCSP to obtain broad SEDs, R_23 metallicities, and star formation rates for 18 of the 25 remaining host galaxies (all z≤0.15) from the NGSS sample (20 targets were obtained in the 2010 semesters). These data will be combined with the remaining sample to be completed in the 2011B semester. The sample will provide a validity test of the mostly indirect trends being established for SNe Ia from the LOSS, SDSS, SNfactory and other surveys, and ultimately steer future investigations towards more precise SN Ia cosmology.

  2. Hydrogen peroxide route to Sn-doped titania photocatalysts

    Directory of Open Access Journals (Sweden)

    Štengl Václav

    2012-10-01

    Full Text Available Abstract Background The work aims at improving photocatalytic activity of titania under Vis light irradiation using modification by Sn ions and an original, simple synthesis method. Tin-doped titania catalysts were prepared by thermal hydrolysis of aqueous solutions of titanium peroxo-complexes in the presence of SnCl4 or SnCl2 using an original, proprietary "one pot" synthesis not employing organic solvents, metallo-organic precursors, autoclave aging nor post-synthesis calcination. The products were characterized in details by powder diffraction, XPS, UV–vis, IR, and Raman spectroscopies, electron microscopy and surface area and porosity measurements Results The presence of tin in synthesis mixtures favors the formation of rutile and brookite at the expense of anatase, decreases the particle size of all formed titania polymorphs, and extends light absorption of titania to visible light region >400 nm by both red shift of the absorption edge and introduction of new chromophores. The photocatalytic activity of titania under UV irradiation and >400 nm light was tested by decomposition kinetics of Orange II dye in aqueous solution Conclusions Doping by Sn improves titania photoactivity under UV light and affords considerable photoactivity under >400 nm light due to increased specific surface area and a phase heterogeneity of the Sn-doped titania powders.

  3. SN IA in the IR: RAISIN A progress report

    Science.gov (United States)

    Kirshner, Robert P.; The RAISIN TEAM

    2014-01-01

    SN Ia have proven to be a powerful tool for cosmology. Near-IR observations of SN Ia promise even better results because the supernovae are more nearly standard candles at those wavelengths and absorption by dust is diminished by a factor of 4 compared to rest-frame B-band observations. Near IR observations of cosmologically-distant SN Ia discovered with PanSTARRS are underway using the infrared camera on the Hubble Space Telescope (GO-13046). These targets are discovered in the difference images created in the CfA/JHU pipeline, confirmed spectroscopically at the MMT, Magellan, Gemini, or Keck, and inserted in a non-disruptive way into the HST observing schedule for WFC3-IR. We have observed over 20 SN Ia in the range 0.2 color and reddening by dust. Since SN IA behave better in the IR in both these ways, there is reason to expect that this approach will be effective in driving down the systematic errors over time. If we are diligent in building up the size of the sample that is observed in the rest-frame infrared, we can expect more certain knowledge of the properties of dark energy. Unsolved problems include constructing precise K-corrections and firming up the fundamental photometric system in y, J, H, and K, but this approach seems a promising one for the HST era now, JWST soon, and WFIRST in good time.

  4. Hydrogen peroxide route to Sn-doped titania photocatalysts

    Science.gov (United States)

    2012-01-01

    Background The work aims at improving photocatalytic activity of titania under Vis light irradiation using modification by Sn ions and an original, simple synthesis method. Tin-doped titania catalysts were prepared by thermal hydrolysis of aqueous solutions of titanium peroxo-complexes in the presence of SnCl4 or SnCl2 using an original, proprietary "one pot" synthesis not employing organic solvents, metallo-organic precursors, autoclave aging nor post-synthesis calcination. The products were characterized in details by powder diffraction, XPS, UV–vis, IR, and Raman spectroscopies, electron microscopy and surface area and porosity measurements Results The presence of tin in synthesis mixtures favors the formation of rutile and brookite at the expense of anatase, decreases the particle size of all formed titania polymorphs, and extends light absorption of titania to visible light region >400 nm by both red shift of the absorption edge and introduction of new chromophores. The photocatalytic activity of titania under UV irradiation and >400 nm light was tested by decomposition kinetics of Orange II dye in aqueous solution Conclusions Doping by Sn improves titania photoactivity under UV light and affords considerable photoactivity under >400 nm light due to increased specific surface area and a phase heterogeneity of the Sn-doped titania powders. PMID:23035821

  5. Thermoelectric properties of single-layered SnSe sheet.

    Science.gov (United States)

    Wang, Fancy Qian; Zhang, Shunhong; Yu, Jiabing; Wang, Qian

    2015-10-14

    Motivated by the recent study of inspiring thermoelectric properties in bulk SnSe [Zhao et al., Nature, 2014, 508, 373] and the experimental synthesis of SnSe sheets [Chen et al., J. Am. Chem. Soc., 2013, 135, 1213], we have carried out systematic calculations for a single-layered SnSe sheet focusing on its stability, electronic structure and thermoelectric properties by using density functional theory combined with Boltzmann transport theory. We have found that the sheet is dynamically and thermally stable with a band gap of 1.28 eV, and the figure of merit (ZT) reaches 3.27 (2.76) along the armchair (zigzag) direction with optimal n-type carrier concentration, which is enhanced nearly 7 times compared to its bulk counterpart at 700 K due to quantum confinement effect. Furthermore, we designed four types of thermoelectric couples by assembling single-layered SnSe sheets with different transport directions and doping types, and found that their efficiencies are all above 13%, which are higher than those of thermoelectric couples made of commercial bulk Bi2Te3 (7%-8%), suggesting the great potential of single-layered SnSe sheets for heat-electricity conversion.

  6. Hydrogen peroxide route to Sn-doped titania photocatalysts.

    Science.gov (United States)

    Stengl, Václav; Grygar, Tomáš Matys; Henych, Jiří; Kormunda, Martin

    2012-10-05

    The work aims at improving photocatalytic activity of titania under Vis light irradiation using modification by Sn ions and an original, simple synthesis method. Tin-doped titania catalysts were prepared by thermal hydrolysis of aqueous solutions of titanium peroxo-complexes in the presence of SnCl4 or SnCl2 using an original, proprietary "one pot" synthesis not employing organic solvents, metallo-organic precursors, autoclave aging nor post-synthesis calcination. The products were characterized in details by powder diffraction, XPS, UV-vis, IR, and Raman spectroscopies, electron microscopy and surface area and porosity measurements The presence of tin in synthesis mixtures favors the formation of rutile and brookite at the expense of anatase, decreases the particle size of all formed titania polymorphs, and extends light absorption of titania to visible light region >400 nm by both red shift of the absorption edge and introduction of new chromophores. The photocatalytic activity of titania under UV irradiation and >400 nm light was tested by decomposition kinetics of Orange II dye in aqueous solution Doping by Sn improves titania photoactivity under UV light and affords considerable photoactivity under >400 nm light due to increased specific surface area and a phase heterogeneity of the Sn-doped titania powders.

  7. Shell Model Description of $^{102-108}$Sn Isotopes

    CERN Document Server

    Trivedi, T; Negi, D; Mehrotra, I

    2012-01-01

    We have performed shell model calculations for neutron deficient even $^{102-108}$Sn and odd $^{103-107}$Sn isotopes in $sdg_{7/2}h_{11/2}$ model space using two different interactions. The first set of interaction is due to Brown {\\it et al.} and second is due to Hoska {\\it et al}. The calculations have been performed using doubly magic $^{100}$Sn as core and valence neutrons are distributed over the single particle orbits 1$g_{7/2}$, 2$d_{5/2}$, 2$d_{3/2}$, 3$s_{1/2}$ and 1$h_{11/2}$. In more recent experimental work for $^{101}$Sn [Phys. Rev. Lett. {\\bf 105} (2010) 162502], the g.s. is predicted as 5/2$^+$ with excited 7/2$^+$ at 172 keV. We have also performed another two set of calculations by taking difference in single particle energies of 2$d_{5/2}$ and 1$g_{7/2}$ orbitals by 172 keV. The present state-of-the-art shell model calculations predicts fair agreements with the experimental data. These calculations serve as a test of nuclear shell model in the region far from stability for unstable Sn isotop...

  8. Superconductivity in Lu{sub 2}SnC

    Energy Technology Data Exchange (ETDEWEB)

    Kuchida, S., E-mail: s-kuchida@phys.aoyama.ac.jp [Department of Physics and Mathematics, Aoyama-Gakuin University, 5-10-1 Fuchinobe, Sagamihara, Kanagawa 252-5258 (Japan); Muranaka, T. [Department of Engineering Science, The University of Electro-Communications, 1-5-1 Chofugaoka, Chofu, Tokyo 182-8585 (Japan); Kawashima, K.; Inoue, K. [Department of Physics and Mathematics, Aoyama-Gakuin University, 5-10-1 Fuchinobe, Sagamihara, Kanagawa 252-5258 (Japan); Yoshikawa, M. [IMRA Material Co. Ltd., 2-1 Asahicho, Kariya, Aichi 448-0032 (Japan); Akimitsu, J. [Department of Physics and Mathematics, Aoyama-Gakuin University, 5-10-1 Fuchinobe, Sagamihara, Kanagawa 252-5258 (Japan)

    2013-11-15

    Highlights: •We discovered the superconductivity in Lu{sub 2}SnC. •The superconducting transition temperature is confirmed at around 5.2 K. •The M–H curve at 1.8 K shows that Lu{sub 2}SnC is categorized to be a conventional type-II superconductor. -- Abstract: We discovered the superconductivity in Lu{sub 2}SnC with the T{sub c} of 5.2 K. Lu{sub 2}SnC crystallizes in a hexagonal structure (Cr{sub 2}AlC-type) with the space group of P6{sub 3}/mmc. We measured the physical properties of Lu{sub 2}SnC in the superconducting state as functions of temperature and magnetic field. The M–H curve shows the typical type-II superconducting behavior. Superconducting parameters H{sub c1}(0), H{sub c2}(0), λ(0), ξ(0) and κ{sub GL} are determined to be about 110 Oe, 4.5 kOe, 250 nm, 27 nm, and 9.2, respectively.

  9. The effect of intermetallic compound morphology on Cu diffusion in Sn-Ag and Sn-Pb solder bump on the Ni/Cu Under-bump metallization

    Science.gov (United States)

    Jang, Guh-Yaw; Duh, Jenq-Gong

    2005-01-01

    The eutectic Sn-Ag solder alloy is one of the candidates for the Pb-free solder, and Sn-Pb solder alloys are still widely used in today’s electronic packages. In this tudy, the interfacial reaction in the eutectic Sn-Ag and Sn-Pb solder joints was investigated with an assembly of a solder/Ni/Cu/Ti/Si3N4/Si multilayer structures. In the Sn-3.5Ag solder joints reflowed at 260°C, only the (Ni1-x,Cux)3Sn4 intermetallic compound (IMC) formed at the solder/Ni interface. For the Sn-37Pb solder reflowed at 225°C for one to ten cycles, only the (Ni1-x,Cux)3Sn4 IMC formed between the solder and the Ni/Cu under-bump metallization (UBM). Nevertheless, the (Cu1-y,Niy)6Sn5 IMC was observed in joints reflowed at 245°C after five cycles and at 265°C after three cycles. With the aid of microstructure evolution, quantitative analysis, and elemental distribution between the solder and Ni/Cu UBM, it was revealed that Cu content in the solder near the solder/IMC interface played an important role in the formation of the (Cu1-y,Niy)6Sn5 IMC. In addition, the diffusion behavior of Cu in eutectic Sn-Ag and Sn-Pb solders with the Ni/Cu UBM were probed and discussed. The atomic flux of Cu diffused through Ni was evaluated by detailed quantitative analysis in an electron probe microanalyzer (EPMA). During reflow, the atomic flux of Cu was on the order of 1016-1017 atoms/cm2sec in both the eutectic Sn-Ag and Sn-Pb systems.

  10. Uniform nano-Sn/C composite anodes for lithium ion batteries.

    Science.gov (United States)

    Xu, Yunhua; Liu, Qing; Zhu, Yujie; Liu, Yihang; Langrock, Alex; Zachariah, Michael R; Wang, Chunsheng

    2013-02-13

    Nano-Sn/C composites are ideal anode materials for high energy and power density Li-ion batteries. However, because of the low melting point of Sn and the tendency of grain growth, especially during high temperature carbonization, it has been a significant challenge to create well-dispersed ultrasmall Sn nanoparticles within a carbon matrix. In this paper, we demonstrate an aerosol spray pyrolysis technique, as a facile and scalable method, to synthesize a nano-Sn/C composite with uniformly dispersed 10 nm nano-Sn within a spherical carbon matrix. The discharge capacity of nano-Sn/C composite sphere anodes maintains the initial capacity of 710 mAh/g after 130 cycles at 0.25 C. The nano-Sn/C composite sphere anodes can provide ~600 mAh/g even at a high rate of 20 C. To the best of our knowledge, such high rate performance for Sn anodes has not been reported previously. The exceptional performance of the nano-Sn/C composite is attributed to the unique nano-Sn/C structure: (1) carbon matrix offers mechanical support to accommodate the stress associated with the large volume change of nano-Sn, thus alleviating pulverization; (2) the carbon matrix prevents Sn nanoparticle agglomeration upon prolonged cycling; and (3) carbon network provides continuous path for Li ions and electrons inside the nano-Sn/C composite spheres.

  11. La或N掺杂SiC纳米线的制备、场发射性能及第一性原理计算%Preparation, Field Emission Characteristics and First-Principles Calculations of La-Doped or N-Doped SiC Nanowires

    Institute of Scientific and Technical Information of China (English)

    李镇江; 马凤麟; 张猛; 宋冠英; 孟阿兰

    2015-01-01

    La-and N-doped SiC nanowires were prepared using a vapor-phase doping method and chemical vapor deposition method, respectively. The morphologies, element analysis, and crystal structures of the products were characterized by field emission scanning electron microscope (FE-SEM), transmission electron microscope (TEM), selected area electron diffraction (SAED), high-resolution transmission electron microscope (HRTEM), X-ray energy dispersive spectrum (EDS), and X-ray diffraction (XRD). The field emission properties of the nanowires doped with different elements were tested by field emission measurements, and the results show that the turn on field (Eto) and threshold field (Ethr) of La-doped SiC nanowires are 1.2 and 5.2 V∙μm-1, and those of N-doped SiC nanowires are 0.9 and 4.0 V∙μm-1, respectively, these values are clearly lower than those of 2.3 and 6.6 V∙μm-1 for undoped SiC nanowires. In addition, the density of states (DOS) and band structures of undoped, N-doped, and La-doped, SiC nanowires were also calculated using Castep of material studio on the basis of the first-principles. The results of the theoretical calculations suggest that the narrower gap may be attributed to the impurity energy level (La 5d or N 2p) generated near the Fermi level. Because of the narrower gap, electrons transfer from the valence band maximum (VBM) to conduction band minimum (CBM) need less energy, and this enhances the field emission property.%采用化学气相沉积法和气相掺杂法,分别制备了La或N掺杂的SiC纳米线.利用场发射扫描电子显微镜(FE-SEM)、透射电子显微镜(TEM)、选区电子衍射(SAED)、高分辨透射电子显微镜(HRTEM)、X射线能量色散谱(EDS)分析和X射线衍射(XRD)等测试手段对两种产物的微观形貌、元素组成和物相结构进行了系统表征.以合成产物作为阴极,对其场发射性能进行测试,结果表明:SiC纳米线的开启电场值和阈值电场值由未掺杂的2.3

  12. 气相氯交换的SN2(C)、SN2(N)、SN2(Si)和SN2(P)反应的理论研究%Theoretical study on SN2 (C) , SN2 (N), SN2 (Si) and SN2 (P) reactions with Cl-in the gas phase

    Institute of Scientific and Technical Information of China (English)

    丁艳丽

    2013-01-01

    利用从头算方法研究了以C、N、Si和P为反应中心恒等的Cl交换SN2反应.研究表明,所讨论的八个反应,无论是背面还是前面进攻的反应活化能都受到中心原子极化率和电负性的影响:中心原子的极化率越大,反应需要的活化能越低,反应越容易进行;中心原子的电负性越大,反应需要的活化能越高,反应越不容易进行.

  13. Hubble space telescope and ground-based observations of the type Iax supernovae SN 2005hk and SN 2008A

    Energy Technology Data Exchange (ETDEWEB)

    McCully, Curtis; Jha, Saurabh W. [Department of Physics and Astronomy, Rutgers, the State University of New Jersey, 136 Frelinghuysen Road, Piscataway, NJ 08854 (United States); Foley, Ryan J. [Astronomy Department, University of Illinois at Urbana-Champaign, 1002 West Green Street, Urbana, IL 61801 (United States); Chornock, Ryan [Harvard-Smithsonian Center for Astrophysics, 60 Garden Street, Cambridge, MA 02138 (United States); Holtzman, Jon A. [Department of Astronomy, MSC 4500, New Mexico State University, P.O. Box 30001, Las Cruces, NM 88003 (United States); Balam, David D. [Dominion Astrophysical Observatory, Herzberg Institute of Astrophysics, 5071 West Saanich Road, Victoria, BC V9E 2E7 (Canada); Branch, David [Homer L. Dodge Department of Physics and Astronomy, University of Oklahoma, Norman, OK 73019 (United States); Filippenko, Alexei V.; Ganeshalingam, Mohan; Li, Weidong [Department of Astronomy, University of California, Berkeley, CA 94720-3411 (United States); Frieman, Joshua [Kavli Institute for Cosmological Physics and Department of Astronomy and Astrophysics, University of Chicago, 5640 South Ellis Avenue, Chicago, IL 60637 (United States); Fynbo, Johan; Leloudas, Giorgos [Dark Cosmology Centre, Niels Bohr Institute, University of Copenhagen, Juliane Maries Vej 30, DK-2100 Copenhagen Ø (Denmark); Galbany, Lluis [Institut de Física d' Altes Energies, Universitat Autònoma de Barcelona, E-08193 Bellaterra (Barcelona) (Spain); Garnavich, Peter M. [Department of Physics, University of Notre Dame, Notre Dame, IN 46556 (United States); Graham, Melissa L. [Las Cumbres Observatory Global Telescope Network, Goleta, CA 93117 (United States); Hsiao, Eric Y. [Carnegie Observatories, Las Campanas Observatory, Colina El Pino, Casilla 601 (Chile); Leonard, Douglas C., E-mail: cmccully@physics.rutgers.edu [Department of Astronomy, San Diego State University, San Diego, CA 92182 (United States); and others

    2014-05-10

    We present Hubble Space Telescope (HST) and ground-based optical and near-infrared observations of SN 2005hk and SN 2008A, typical members of the Type Iax class of supernovae (SNe). Here we focus on late-time observations, where these objects deviate most dramatically from all other SN types. Instead of the dominant nebular emission lines that are observed in other SNe at late phases, spectra of SNe 2005hk and 2008A show lines of Fe II, Ca II, and Fe I more than a year past maximum light, along with narrow [Fe II] and [Ca II] emission. We use spectral features to constrain the temperature and density of the ejecta, and find high densities at late times, with n{sub e} ≳ 10{sup 9} cm{sup –3}. Such high densities should yield enhanced cooling of the ejecta, making these objects good candidates to observe the expected 'infrared catastrophe', a generic feature of SN Ia models. However, our HST photometry of SN 2008A does not match the predictions of an infrared catastrophe. Moreover, our HST observations rule out a 'complete deflagration' that fully disrupts the white dwarf for these peculiar SNe, showing no evidence for unburned material at late times. Deflagration explosion models that leave behind a bound remnant can match some of the observed properties of SNe Iax, but no published model is consistent with all of our observations of SNe 2005hk and 2008A.

  14. Nano-structure analysis of Fe implanted SnO2 films by 57Fe and 119Sn CEMS

    Science.gov (United States)

    Nomura, Kiyoshi; Reuther, Helfried

    2009-06-01

    SnO2 films were implanted with 57Fe at substrate temperatures of room temperature and 300°C. The chemical states of Fe and Sn were characterized by 57Fe CEMS and 119Sn CEMS, respectively. The implanted Fe species exist as Fe(II) and Fe(III) in SnO2 films, which also are reduced into Sn(II)on the implanted surface. The as prepared and post annealed at 500°C samples did not show Kerr effect, but the sample implanted with 1 × 1017 Fe ions/cm2 at 300°C showed Kerr effect although magnetic sextets were not clearly observed in the 57Fe CEM spectra. The Kerr effect disappeared after annealing. It suggests that the number of magnetic defects decreases by absorption of oxygen. Magnetic relaxation appeared in the case of low implantation of 5 × 1016 Fe ions/cm2, which is considered to be due to anti-ferromagnetism or paramagnetic relaxation.

  15. Primary structure identification of snRNAs present in highly purified snRNPs from HeLa cells.

    Science.gov (United States)

    Sri-Widada, J; Liautard, J P; Assens, C; Brunel, C

    1981-11-30

    Extensive purification of snRNPs as a subset of hnRNP from HeLa cells has been previously reported (Brunel et al. (1981), Nucleic Acids Research, 9, 815). These snRNPs were shown to contain discrete RNA species comigrating in gel electrophoresis with authentic U1, U2, U4, U5 and U6 species. We now report sequence analysis data of about 50 nucleotides from the 3'-end which serve to positively establish the identity of snRNAs present in these purified snRNPs. Sequence heterogeneity was found at the 3'-end of U4 species. A minor species identical to U1 at its 3'-end but slightly shorter was identified as the U1 described by Lerner et al. (Nature (1980) 283, 220-224) through sequencing of the 5'-end. When unfixed hnRNP are centrifuged in a CsCl gradient containing 4M guanidinium chloride instead of 0.5% sarkosyl as above, a band containing only one RNA species was observed. T1 RNAse fingerprinting and sequence analysis of the oligonucleotides produced allowed identification of this RNA as U5 snRNA.

  16. Sn/SnOx Core-Shell Nanospheres: Synthesis, Anode Performance in Li Ion Batteries, and Superconductivity

    Energy Technology Data Exchange (ETDEWEB)

    Wang, X.L.; Feygenson, M.; Aronson, M.C.; Han, W.-Q.

    2010-09-09

    Sn/SnO{sub x} core?shell nanospheres have been synthesized via a modified polyol process. Their size can be readily controlled by tuning the usage of surface stabilizers and the temperature. Anode performance in Li ion batteries and their superconducting properties is detailed. As anode materials, 45 nm nanospheres outperform both larger and smaller ones. Thus, they exhibit a capacity of about 3443 mAh cm{sup -3} and retain about 88% of after 10 cycles. We propose a model based on the microstructural evolution to explain the size impact on nanosphere performance. Magnetic measurements indicate that the nanospheres become superconducting below the transition temperature T{sub C} = 3.7 K, which is similar to the value obtained in bulk tin. Although T{sub C} does not significantly change with the size of the Sn core, we determined that the critical field H{sub C} of nanospheres can be as much as a factor of 30 larger compared to the bulk value. Alternating current measurements demonstrated that a transition from conventional to filamentary superconducting structure occurs in Sn/SnO{sub x} particles as their size increases. The transition is determined by the relationship between the particle size and the magnetic field penetration depth.

  17. Optical Evidence for Circumstellar Interaction Around SN 1993J

    Institute of Scientific and Technical Information of China (English)

    WANG Xiao-Feng; ZHANG Tian-Meng; ZHOU Xu; LI Zong-Wei

    2004-01-01

    We study the circumstellar interaction around SN 1993J by its intermediate-band light curves obtained by the 60/90 cm Schmidt telescope at Xinglong station. The optical emission showed a slow decay of 0.05±0.02 mag/100 d in the period from 1995 to 2003, invoking a main energy contribution from SN-circumstellar interaction at late times. The relatively flat power law SN density model fits better with the observations. In particular, the line ratio of [O Ⅲ]λλ4959, 5007 and Na I D relative to Hα are well reproduced by the model. Moreover, the Hα light curve displayed obvious bump structures at some epochs, which is probably attributed to the density fluctuations in the ambient material that surrounds the reverse shockwave.

  18. Influence of Sn content on microstructural and mechanical properties of centrifugal cast Ti-Nb-Sn biomedical alloys; Efeitos da adicao de Sn na evolucao microestrutural e em propriedades mecanicas de ligas Ti-Nb-Sn biomedicas fundidas por centrifugacao

    Energy Technology Data Exchange (ETDEWEB)

    Lopes, E.S.N.; Contieri, R.J.; Caram, R., E-mail: ederlopes@fem.unicamp.b [Universidade Estadual de Campinas (DEMA/FEM/UNICAMP), SP (Brazil). Fac. de Engenharia Mecanica. Dept. de Engenharia de Materiais; Moraes, P.E.L. [FATEC Artur Azevedo, Mogi Mirim, SP (Brazil); Costa, A.M.S. [Universidade de Sao Paulo (DEMAR/EEL/USP), Lorena, SP (Brazil). Escola de Engenharia. Dept. de Engenharia de Materiais

    2010-07-01

    The arc voltaic centrifugal casting is an interesting alternative in terms of economic and technological development in the production of components based on materials with high reactivity and high melting point, such as titanium alloys. In this work, Ti-30Nb (wt. %) with additions of Sn (2, 4, 6, 8 and 10 wt. %) were formed by casting process. Characterization of the samples included optical microscopy, scanning electron microscopy, X-ray diffraction, Vickers hardness and elastic modulus measures by acoustic techniques. It was observed that the microstructure of the samples investigated is composed by dendritic structures, with clear segregation of alloying elements. The Vickers hardness and the elastic modulus decreased with the addition of Sn. The results show that the mechanical behavior of Ti-Nb alloys can be controlled within certain limits, by adding Sn. (author)

  19. LARP Long Nb3Sn Racetrack Coil Program

    Energy Technology Data Exchange (ETDEWEB)

    Wanderer, P.; Ambrosio, G.; Anerella, M.; Barzi, E.; Bossert, R.; Cheng, D.; Cozzolino, J.; Escallier, J.; Ferracin, P.; Ganetis, G.; Ghosh, A. K.; Gupta, R. C.; Hafalia, A. R.; Hannaford, C. R.; Joshi, P.; Kovach, P.; Lietzke, A. F.; Louie, W.; Marone, A.; McInturff, A. D.; Muratore, J.; Nobrega, F.; Schmalzle, J.; Thomas, R.; Turrioni, D.

    2007-06-01

    Development of high-performance Nb{sub 3}Sn quadrupoles is one of the major goals of the LHC Accelerator Research Program (LARP). As part of this program, long racetrack magnets are being made in order to check that the change in coil length that takes place during reaction is correctly accounted for in the quadrupole design and to check for length effects in implementing the 'shell' method of coil support. To check the racetrack magnet manufacturing plan, a short racetrack magnet is being made. This magnet will be the first to use restack-rod process Nb{sub 3}Sn, making it a 'long sample' test vehicle for this new material. The paper reports the reaction and characterization of the Nb{sub 3}Sn, and construction features and test results from the short racetrack magnet. The paper also reports on the status of the construction of the first long racetrack magnet.

  20. Gamma Spectroscopy along N∼Z towards 100Sn

    Institute of Scientific and Technical Information of China (English)

    刘忠

    2016-01-01

    A wide range of research topics in different fields of physics can be addressed by study of the self-conjugate N=Z nuclei, such as the np pairing, isospin symmetry, the rp-process and the properties of the electroweak interaction. This contribution focuses on the spectroscopy of N ∼Z nuclei towards 100Sn. The latest results on the isomeric decay spectroscopy of N ∼Z nuclei below 100Sn, such as the N=Z+2 nuclides 94Pd and96Ag, the N=Z nuclide 96Cd and so on are highlighted. New opportunities in in-beamγ spectrscopy of N∼Z nuclei towards 100Sn, like 90Rh and 92Pd, with radioactive ion beams are discussed.

  1. The ASAS-SN Bright Supernova Catalog $-$ II. 2015

    CERN Document Server

    Holoien, T W -S; Stanek, K Z; Kochanek, C S; Shappee, B J; Prieto, J L; Dong, Subo; Brimacombe, J; Bishop, D W; Basu, U; Beacom, J F; Bersier, D; Chen, Ping; Danilet, A B; Falco, E; Godoy-Rivera, D; Goss, N; Pojmanski, G; Simonian, G V; Skowron, D M; Thompson, Todd A; Woźniak, P R; Avíla, C G; Bock, G; Carballo, J -L G; Conseil, E; Contreras, C; Cruz, I; andújar, J M F; Guo, Zhen; Hsiao, E Y; Kiyota, S; Koff, R A; Krannich, G; Madore, B F; Marples, P; Masi, G; Morrell, N; Monard, L A G; Munoz-Mateos, J C; Nicholls, B; Nicolas, J; Wagner, R M; Wiethoff, W S

    2016-01-01

    This manuscript presents information for all supernovae discovered by the All-Sky Automated Survey for SuperNovae (ASAS-SN) during 2015, its second full year of operations. The same information is presented for bright ($m_V\\leq17$), spectroscopically confirmed supernovae discovered by other sources in 2015. As with the first ASAS-SN bright supernova catalog, we also present redshifts and near-UV through IR magnitudes for all supernova host galaxies in both samples. Combined with our previous catalog, this work comprises a complete catalog of 455 supernovae from multiple professional and amateur sources, allowing for population studies that were previously impossible. This is the second of a series of yearly papers on bright supernovae and their hosts from the ASAS-SN team.

  2. The ASAS-SN Bright Supernova Catalog - II. 2015

    Science.gov (United States)

    Holoien, T. W.-S.; Brown, J. S.; Stanek, K. Z.; Kochanek, C. S.; Shappee, B. J.; Prieto, J. L.; Dong, Subo; Brimacombe, J.; Bishop, D. W.; Basu, U.; Beacom, J. F.; Bersier, D.; Chen, Ping; Danilet, A. B.; Falco, E.; Godoy-Rivera, D.; Goss, N.; Pojmanski, G.; Simonian, G. V.; Skowron, D. M.; Thompson, Todd A.; Woźniak, P. R.; Ávila, C. G.; Bock, G.; Carballo, J.-L. G.; Conseil, E.; Contreras, C.; Cruz, I.; Andújar, J. M. F.; Guo, Zhen; Hsiao, E. Y.; Kiyota, S.; Koff, R. A.; Krannich, G.; Madore, B. F.; Marples, P.; Masi, G.; Morrell, N.; Monard, L. A. G.; Munoz-Mateos, J. C.; Nicholls, B.; Nicolas, J.; Wagner, R. M.; Wiethoff, W. S.

    2017-01-01

    This manuscript presents information for all supernovae discovered by the All-Sky Automated Survey for SuperNovae (ASAS-SN) during 2015, its second full year of operations. The same information is presented for bright (mV ≤ 17), spectroscopically confirmed supernovae discovered by other sources in 2015. As with the first ASAS-SN bright supernova catalog, we also present redshifts and near-UV through IR magnitudes for all supernova host galaxies in both samples. Combined with our previous catalog, this work comprises a complete catalog of 455 supernovae from multiple professional and amateur sources, allowing for population studies that were previously impossible. This is the second of a series of yearly papers on bright supernovae and their hosts from the ASAS-SN team.

  3. Synthesis and crystal structure of PdSnTe

    Energy Technology Data Exchange (ETDEWEB)

    Laufek, F. [Czech Geological Survey, Geologicka 6, 152 00 Praha 5 (Czech Republic)], E-mail: frantisek.laufek@geology.cz; Vymazalova, A. [Czech Geological Survey, Geologicka 6, 152 00 Praha 5 (Czech Republic); Navratil, J. [Joint Laboratory of Solid State Chemistry of IMC AS CR and University of Pardubice, Studentska 84, 532 10 Pardubice (Czech Republic); Drabek, M. [Czech Geological Survey, Geologicka 6, 152 00 Praha 5 (Czech Republic); Plasil, J. [Faculty of Science, Charles University, Albertov 6, 128 43 Praha 2 (Czech Republic); Plechacek, T. [Joint Laboratory of Solid State Chemistry of IMC AS CR and University of Pardubice, Studentska 84, 532 10 Pardubice (Czech Republic)

    2009-01-22

    The compound with composition PdSnTe was prepared by heating of stoichiometric amount of Pd, Sn and Te in silica glass tube at 400 deg. C. Its crystal structure was refined by Rietveld method using conventional X-ray powder diffraction data. PdSnTe shows orthorhombic symmetry, space group Pbca with unit cell parameters a = 6.5687(2), b = 6.6028(2), c = 12.8849(4) A, V = 558.8(1) A{sup 3} and Z = 8. The title compound can be viewed as a ternary-ordered variant of {alpha}-NiAs{sub 2}-type structure, it is isostructural with PtSiTe. Temperature dependence of electrical conductivity and Hall coefficient are presented, it suggests semimetallic or strongly degenerated semiconductor behaviour of the prepared compound.

  4. Gas Sensing Properties of Ordered Mesoporous SnO2

    Directory of Open Access Journals (Sweden)

    Michael Tiemann

    2006-04-01

    Full Text Available We report on the synthesis and CO gas-sensing properties of mesoporoustin(IV oxides (SnO2. For the synthesis cetyltrimethylammonium bromide (CTABr wasused as a structure-directing agent; the resulting SnO2 powders were applied as films tocommercially available sensor substrates by drop coating. Nitrogen physisorption showsspecific surface areas up to 160 m2·g-1 and mean pore diameters of about 4 nm, as verifiedby TEM. The film conductance was measured in dependence on the CO concentration inhumid synthetic air at a constant temperature of 300 °C. The sensors show a high sensitivityat low CO concentrations and turn out to be largely insensitive towards changes in therelative humidity. We compare the materials with commercially available SnO2-basedsensors.

  5. Calorimetric study of tellurium rich Se-Te-Sn glasses

    Science.gov (United States)

    Heera, Pawan; Kumar, Anup; Jharwal, Manish; Sharma, Raman

    2016-05-01

    We report the calorimetric study of amorphous Se30Te70-x Snx alloys for x= 0, 1.5, 2.5, 4.5 in terms of kinetic parameters. The DSC curves recorded at four different heating rates are analyzed to determine the transition temperatures, activation energy, thermal stability, glass forming ability. The crystallization process has been investigated using Kissinger, Matusita, Augis and Bennett, and Gao and Wang models. Various kinetic parameters have been calculated for a better understanding of the growth mechanism. The glass transition temperatures Tg, onset crystallization Tc, peak crystallization Tp, and melting temperature Tm are found to increase with the increase in Sn content. The system under investigation is found to be thermally stable for at lower at% of Sn. The values of parameters HR, Hw, and S indicate that Glass forming ability (GFA) decays with an increase in Sn content.

  6. Mechanical Characterization of Lead-Free Sn-Ag-Cu Solder Joints by High-Temperature Nanoindentation

    OpenAIRE

    Lotfian, S.; Molina Aldareguía, Jon M.; Yazzie, K. E.; Llorca Martinez, Francisco Javier; Chawla, N

    2013-01-01

    The reliability of Pb-free solder joints is controlled by their microstructural constituents. Therefore, knowledge of the solder microconstituents’ mechanical properties as a function of temperature is required. Sn-Ag-Cu lead-free solder alloy contains three phases: a Sn-rich phase, and the intermetallic compounds (IMCs) Cu6Sn5 and Ag3Sn. Typically, the Sn-rich phase is surrounded by a eutectic mixture of β-Sn, Cu6Sn5, and Ag3Sn. In this paper, we report on the Young’s modulus and hardness of...

  7. Effect of Trace Sn on Pitting Behaviors of High Voltage Anode Aluminum Foil

    Institute of Scientific and Technical Information of China (English)

    Jingbo SONG; Weimin MAO; Hong YANG; Huiping FENG

    2008-01-01

    The effect of trace Sn on the pitting morphology of high voltage anode aluminum foils was investigated. The distributions of microelement Sn, Fe, Si, Cu and Mg in the surface layer of aluminum foils with different Sn content were determined by using a secondary ion mass spectrometer. It was found that the micro-alloyed Sn is enriched at the external surface. The mechanism of pitting behavior of trace Sn on aluminum surface is similar with that of lead. Enrichment of Sn in the surface layer provides large numbers of sites for initiation of pitting corrosion, while pitting sites appeared relatively inhomogenously in the foils without Sn. Sn, as an eco-friendly microelement, can be applied to replace Pb in improving the homogenous pitting behaviors of high voltage aluminum foils, in which the volume fraction of cube texture is not reduced.

  8. Study of GeSn based heterostructures: towards optimized group IV MQW LEDs

    National Research Council Canada - National Science Library

    Stange, D; von den Driesch, N; Rainko, D; Schulte-Braucks, C; Wirths, S; Mussler, G; Tiedemann, A T; Stoica, T; Hartmann, J M; Ikonic, Z; Mantl, S; Grützmacher, D; Buca, D

    2016-01-01

    .... An alternative solution using SiGeSn as barrier material is introduced, which provides appropriate band alignment for both electrons and holes resulting in efficient confinement in direct bandgap GeSn wells...

  9. Photoluminescence and electroluminescence from Ge/strained GeSn/Ge quantum wells

    Science.gov (United States)

    Lin, Chung-Yi; Huang, Chih-Hsiung; Huang, Shih-Hsien; Chang, Chih-Chiang; Liu, C. W.; Huang, Yi-Chiau; Chung, Hua; Chang, Chorng-Ping

    2016-08-01

    Ge/strained GeSn/Ge quantum wells are grown on a 300 mm Si substrate by chemical vapor deposition. The direct bandgap emission from strained GeSn is observed in the photoluminescence spectra and is enhanced by Al2O3/SiO2 passivation due to the field effect. The electroluminescence of the direct bandgap emission of strained GeSn is also observed from the Ni/Al2O3/GeSn metal-insulator-semiconductor tunneling diodes. Electroluminescence is a good indicator of GeSn material quality, since defects in GeSn layers degrade the electroluminescence intensity significantly. At the accumulation bias, the holes in the Ni gate electrode tunnel to the strained n-type GeSn layer through the ultrathin Al2O3 and recombine radiatively with electrons. The emission wavelength of photoluminescence and electroluminescence can be tuned by the Sn content.

  10. Infrared photoresponse of GeSn/n-Ge heterojunctions grown by molecular beam epitaxy.

    Science.gov (United States)

    Kim, Sangcheol; Bhargava, Nupur; Gupta, Jay; Coppinger, Matthew; Kolodzey, James

    2014-05-05

    Heterojunction devices of Ge(1-x)Sn(x) / n-Ge were grown by solid source molecular beam epitaxy (MBE), and the mid-infrared (IR) photocurrent response was measured. With increasing Sn composition from 4% to 12%, the photocurrent spectra became red-shifted, suggesting that the bandgap of Ge(1-x)Sn(x) alloys was lowered compared to pure Ge. At a temperature of 100 K, the wavelengths of peak photocurrent were shifted from 1.42 µm for pure Ge (0% Sn) to 2.0 µm for 12% Sn. The bias dependence of the device response showed that the optimum reverse bias was > 0.5 volts for saturated photocurrent. The responsivity of the Ge(1-x)Sn(x) devices was estimated to be 0.17 A/W for 4% Sn. These results suggest that Ge(1-x)Sn(x) photodetectors may have practical applications in the near/mid IR wavelength regime.

  11. Hydrothermal synthesis and infrared emissivity property of flower-like SnO2 particles

    Directory of Open Access Journals (Sweden)

    J. X. Tian

    2014-04-01

    Full Text Available The flower-like SnO2 particles are synthesized through a simple hydrothermal process. The microstructure, morphology and the infrared emissivity property of the as-prepared products are characterized by x-ray diffraction (XRD, scanning electron microscopy (SEM, transmission electron microscope (TEM, and infrared spectroradio meter (ISM respectively. The results show that the as-prepared SnO2 products are all indexed to tetragonal cassiterite phase of SnO2. The different molarity ratios of the OH− concentration to Sn4+ concentration ([OH−]:[Sn4+] and the polyacrylamide (PAM lead to the different morphological structures of SnO2, which indicates that both the [OH−]:[Sn4+] and the PAM play an important role in the morphological evolution respectively. The infrared emissivities of the as-prepared SnO2 products are discussed.

  12. Sobolev inequalities, the Poisson semigroup, and analysis on the sphere Sn.

    Science.gov (United States)

    Beckner, W

    1992-06-01

    Hypercontractive estimates are obtained for the Poisson semigroup on Lp(Sn). Such estimates are determined by a sharp logarithmic Sobolev inequality that relates the entropy of a function on Sn to its smoothness.

  13. Preparation and Photocatalytic Properties of SnO2 Coated on Nitrogen-Doped Carbon Nanotubes

    Directory of Open Access Journals (Sweden)

    Lingling Wang

    2012-01-01

    Full Text Available SnO2 nanoparticles coated on nitrogen-doped carbon nanotubes were prepared successfully via a simple wet-chemical route. The as-obtained SnO2/CNx composites were characterized using X-ray powder diffraction, scanning electron microscopy, and transmission electron microscopy. The photocatalytic activity of as-prepared SnO2/CNx for degradation Rhodamine B under UV light irradiation was investigated. The results show that SnO2/CNx nanocomposites have a higher photocatalytic activity than pure SnO2 and SnO2/CNTs nanocomposites. This enhanced photoresponse indicates that the photoinduced electrons in the SnO2 prefer separately transferring to the CNx, which has a high degree of defects. As a consequence, the radiative recombination of the electron-hole pairs is hampered and the photocatalytic activity is significantly enhanced for the SnO2/CNx photocatalysts.

  14. Baeyer-Villiger oxidation of ketones with hydrogen peroxide catalyzed by Sn-aniline complex

    Institute of Scientific and Technical Information of China (English)

    Qing Hua Zhang; Shou Feng Wang; Zi Qiang Lei

    2007-01-01

    Sn-aniline complex was prepared by a simple procedure. Cyclic and acyclic ketones were oxidized into lactones or esters with very high selectivity and yield with 30% hydrogen peroxide in the presence of Sn-aniline complex.

  15. Tensile properties and thermal shock reliability of Sn-Ag-Cu solder joint with indium addition.

    Science.gov (United States)

    Yu, A-Mi; Jang, Jae-Won; Lee, Jong-Hyun; Kim, Jun-Ki; Kim, Mok-Soon

    2012-04-01

    The thermal shock reliability and tensile properties of a newly developed quaternary Sn-1.2Ag-0.5Cu-0.4In (wt%) solder alloy were investigated and compared to those of ternary Sn-Ag-Cu based Pb-free solder alloys. It was revealed that the Sn-1.2Ag-0.5Cu-0.4In solder alloy shows better thermal shock reliability compared to the Sn-1.0Ag-0.5Cu and Sn-3.0Ag-0.5Cu solder alloys. The quaternary alloy has higher strength than Sn-1.0Ag-0.5Cu alloy, and higher elongation than Sn-3.0Ag-0.5Cu alloy. It was also revealed that the addition of indium promotes the formation of Ag3(Sn, In) phase in the solder joint during reflow process.

  16. Isothermal sections at 1400, 1100 and 900 °C of the Ti–Dy–Sn system below 40 at.% Sn

    Energy Technology Data Exchange (ETDEWEB)

    Bulanova, M.; Fartushna, Yu., E-mail: juliefart@mail.ru; Meleshevich, K.; Samelyuk, A.

    2013-11-25

    Highlights: •The ternary compound Ti{sub 4.2−4.3}Dy{sub 0.8−0.7}Sn{sub ⩽3} (τ) exists at 1400, 1100 and 900 °C. •It takes part in equilibria with the phases (Ti{sub 3}Sn), (Ti{sub 2}Sn), (Ti{sub 5}Sn{sub 3}), (Dy{sub 5}Sn{sub 3}). •The character of the isothermal sections is defined by the phase (Dy{sub 5}Sn{sub 3}). •At 1400 °C the liquid phase is present in the system. •At 1100 and 900 °C the liquid phase is absent. -- Abstract: By the methods of X-ray diffraction, SEM and electron probe microanalysis, phase equilibria in the Ti–Dy–Sn system below 40 at.% Sn at temperatures 1400, 1100 and 900 °C were studied. The isothermal sections at 1400, 1100 and 900 °C were constructed. It was shown that the ternary compound Ti{sub 4.2−4.3}Dy{sub 0.8−0.7}Sn⩽{sub 3} (τ) is stable at these temperatures. At 1400 °C the liquid phase is present in the system. The isothermal section at this temperature is characterized by the three-phase regions L + (βTi) + (Dy{sub 5}Sn{sub 3}), (βTi) + (Ti{sub 3}Sn) + (Dy{sub 5}Sn{sub 3}), (Ti{sub 3}Sn) + τ + (Dy{sub 5}Sn{sub 3}), (Ti{sub 3}Sn) + τ + (Ti{sub 2}Sn) and (Ti{sub 2}Sn) + τ + (Ti{sub 5}Sn{sub 3}) and appropriate two-phase fields. At 1100 and 900 °C the liquid phase is absent, instead the three-phase field (βTi) + (αDy) + (Dy{sub 5}Sn{sub 3}) appears. Other three-phase fields exist at all the temperatures studied. The isothermal sections at 1100 and 900 °C by their character are similar to the solidus surface.

  17. Phonon density of states of Sn in textured SnO under high pressure: Comparison of nuclear inelastic x-ray scattering spectra to a shell model

    Science.gov (United States)

    Giefers, H.; Koval, S.; Wortmann, G.; Sturhahn, W.; Alp, E. E.; Hu, M. Y.

    2006-09-01

    The local phonon density of states (DOS) at the Sn site in tin monoxide (SnO) is studied at pressures up to 8GPa with Sn119 nuclear resonant inelastic x-ray scattering (NRIXS) of synchrotron radiation at 23.88keV . The preferred orientation (texture) of the SnO crystallites in the investigated samples is used to measure NRIXS spectra preferentially parallel and almost perpendicular to the c axis of tetragonal SnO . A subtraction method is applied to these NRIXS spectra to produce projected local Sn DOS spectra as seen parallel and perpendicular to the c axis of SnO . These experimentally obtained local Sn DOS spectra, both in the polycrystalline case as well as projected parallel and perpendicular to the c axis, are compared with corresponding theoretical phonon DOS spectra, derived from dispersion relations calculated with a recently developed shell model. Comparison between the experimental projected Sn DOS spectra and the corresponding theoretical DOS spectra enables us to follow the pressure-induced shifts of several acoustic and optic phonon modes. While the principal spectral features of the experimental and theoretical phonon DOS agree well at energies above 10meV , the pressure behavior of the low-energy part of the DOS is not well reproduced by the theoretical calculations. In fact, they exhibit, in contrast to the experimental data, a dramatic softening of two low-energy modes, their energies approaching zero around 2.5GPa , clearly indicating the limitations of the applied shell model. These difficulties are obviously connected with the complex Sn-O and Sn-Sn bindings within and between the Sn-O-Sn layers in the litharge structure of SnO . We derived from the experimental and theoretical DOS spectra a variety of elastic and thermodynamic parameters of the Sn sublattice, such as the Lamb-Mössbauer factor, the mean force constant, and Debye temperatures, as well as the vibrational contributions to the Helmholtz free energy, specific heat, entropy, and

  18. NASA plans for observations of SN1987A

    Science.gov (United States)

    Riegler, Guenter R.

    1987-01-01

    The scientific aims and technological implementation of NASA observations of SN 1987A are outlined in a status report. Key questions to be answered involve nucleosynthesis and the light curves of type II SN; the multilayer structure of the progenitor and the SNR; circumstellar gas, shock-wave, and dust formation; and the evolution of the core remnant. Consideration is given to continued SMM, IUE, Voyager UVS, and DSN observations; future space missions such as GRO, AXAF, and Rosat; balloon-borne gamma-ray, rocket-borne X-ray, and airborne IR observations; and the Science Communications Network and Data Archive.

  19. Explaining the unusual line profiles of SN 2006gy

    Science.gov (United States)

    Chugai, Nikolai N.

    2017-02-01

    This paper explores the origin of the enigmatic line profiles of the extremely luminous Type IIn supernova, SN 2006gy, on day 96. Among the conceivable possibilities, the most preferred is the model that suggests there are holes in the optically thick cool dense shell (CDS). The line radiation emitted at the inner side of the opaque CDS escapes through the holes, thus producing an unusual line profile with the emission shifted redward. The holes could emerge as a result of the vigorous Rayleigh-Taylor instability, leading to the CDS fragmentation. The model light curve with the CDS fragmentation is shown to be consistent with the SN 2006gy bolometric light curve.

  20. Explaining unusual line profiles of SN 2006gy

    CERN Document Server

    Chugai, Nikolai

    2016-01-01

    Origin of enigmatic line profiles of extremely luminous type IIn supernova SN~2006gy on day 96 is explored. Among conceivable possibilities the most preferred is the model that suggests holes in the optically thick cool dense shell (CDS). The line radiation emitted at the inner side of the opaque CDS escapes through the holes thus producing unusual line profile with the emission shifted redward. The holes could emerge as a result of a vigorous Rayleigh-Taylor instability leading to the CDS fragmentation. The model light curve with the CDS fragmentation is shown to be consistent with the SN~2006gy bolometric light curve.

  1. Strand critical current degradation in $Nb_{3}$ Sn Rutherford cables

    CERN Document Server

    Barzi, E; Higley, H C; Scanlan, R M; Yamada, R; Zlobin, A V

    2001-01-01

    Fermilab is developing 11 Tesla superconducting accelerator magnets based on Nb/sub 3/Sn superconductor. Multifilamentary Nb/sub 3/Sn strands produced using the modified jelly roll, internal tin, and powder-in-tube technologies were used for the development and test of the prototype cable. To optimize the cable geometry with respect to the critical current, short samples of Rutherford cable with packing factors in the 85 to 95% range were fabricated and studied. In this paper, the results of measurements of critical current, n-value and RRR made on the round virgin strands and on the strands extracted from the cable samples are presented. (5 refs).

  2. Aluminum-stabilized Nb/sub 3/Sn superconductor

    Science.gov (United States)

    Scanlan, R.M.

    1984-02-10

    This patent discloses an aluminum-stabilized Nb/sub 3/Sn superconductor and process for producing same, utilizing ultrapure aluminum. Ductile components are co-drawn with aluminum to produce a conductor suitable for winding magnets. After winding, the conductor is heated to convert it to the brittle Nb/sub 3/Sn superconductor phase, using a temperature high enough to perform the transformation but still below the melting point of the aluminum. This results in reaction of substantially all of the niobium, while providing stabilization and react-in-place features which are beneficial in the fabrication of magnets utilizing superconducting materials.

  3. Aluminum-stabilized Nb[sub 3]Sn superconductor

    Science.gov (United States)

    Scanlan, R.M.

    1988-05-10

    Disclosed are an aluminum-stabilized Nb[sub 3]Sn superconductor and process for producing same, utilizing ultrapure aluminum. Ductile components are co-drawn with aluminum to produce a conductor suitable for winding magnets. After winding, the conductor is heated to convert it to the brittle Nb[sub 3]Sn superconductor phase, using a temperature high enough to perform the transformation but still below the melting point of the aluminum. This results in reaction of substantially all of the niobium, while providing stabilization and react-in-place features which are beneficial in the fabrication of magnets utilizing superconducting materials. 4 figs.

  4. Pb-free Sn-Ag-Cu ternary eutectic solder

    Energy Technology Data Exchange (ETDEWEB)

    Anderson, I.E.; Yost, F.G.; Smith, J.F.; Miller, C.M.; Terpstra, R.L.

    1996-06-18

    A Pb-free solder includes a ternary eutectic composition consisting essentially of about 93.6 weight % Sn-about 4.7 weight % Ag-about 1.7 weight % Cu having a eutectic melting temperature of about 217 C and variants of the ternary composition wherein the relative concentrations of Sn, Ag, and Cu deviate from the ternary eutectic composition to provide a controlled melting temperature range (liquid-solid ``mushy`` zone) relative to the eutectic melting temperature (e.g. up to 15 C above the eutectic melting temperature). 5 figs.

  5. 3D MHD simulation of polarized emission in SN 1006

    CERN Document Server

    Schneiter, E M; Reynoso, E M; Esquivel, A; De Colle, F

    2015-01-01

    We use three dimensional magnetohydrodynamic (MHD) simulations to model the supernova remnant SN 1006. From our numerical results, we have carried out a polarization study, obtaining synthetic maps of the polarized intensity, the Stokes parameter $Q$, and the polar-referenced angle, which can be compared with observational results. Synthetic maps were computed considering two possible particle acceleration mechanisms: quasi-parallel and quasi-perpendicular. The comparison of synthetic maps of the Stokes parameter $Q$ maps with observations proves to be a valuable tool to discern unambiguously which mechanism is taking place in the remnant of SN 1006, giving strong support to the quasi-parallel model.

  6. Efficiency of bulky protic solvent for SN2 reaction.

    Science.gov (United States)

    Lee, Sung-Sik; Kim, Ho-Sung; Hwang, Tae-Kyu; Oh, Young-Ho; Park, Sung-Woo; Lee, Sungyul; Lee, Byoung Se; Chi, Dae Yoon

    2008-01-03

    We calculate and compare the effects of aprotic vs protic solvent on the rate of SN2 reaction [F- + C3H7OMs--> C3H7F + OMs-]. We find that aprotic solvent acetonitrile is more efficient than a small protic solvent such as methanol. Bulky protic solvent (tert-butyl alcohol) is predicted to be quite efficient, giving the rate constant that is similar to that in CH3CN. Our calculated relative activation barriers of the SN2 reaction in methanol, tert-butyl alcohol, and CH3CN are in good agreement with experimental observations.

  7. SIEMENS SN 50/70咖啡机

    Institute of Scientific and Technical Information of China (English)

    2006-01-01

    这两款咖啡机是由西门子和雀巢两个“专家”联合打造的高品质产品.作为旗舰级产品的SN 50和SN 70融合了Nespresso公司独特的制作工艺和西门子公司全新的设计理念.可谓是在家享受咖啡生活的极好伴侣.

  8. Tudor Staphylococcal Nuclease (Tudor-SN) Participates in Small Ribonucleoprotein (snRNP) Assembly via Interacting with Symmetrically Dimethylated Sm Proteins*

    Science.gov (United States)

    Gao, Xingjie; Zhao, Xiujuan; Zhu, Yu; He, Jinyan; Shao, Jie; Su, Chao; Zhang, Yi; Zhang, Wei; Saarikettu, Juha; Silvennoinen, Olli; Yao, Zhi; Yang, Jie

    2012-01-01

    Human Tudor staphylococcal nuclease (Tudor-SN) is composed of four tandem repeats of staphylococcal nuclease (SN)-like domains, followed by a tudor and SN-like domain (TSN) consisting of a central tudor flanked by two partial SN-like sequences. The crystal structure of the tudor domain displays a conserved aromatic cage, which is predicted to hook methyl groups. Here, we demonstrated that the TSN domain of Tudor-SN binds to symmetrically dimethylarginine (sDMA)-modified SmB/B′ and SmD1/D3 core proteins of the spliceosome. We demonstrated that this interaction ability is reduced by the methyltransferase inhibitor 5-deoxy-5-(methylthio)adenosine. Mutagenesis experiments indicated that the conserved amino acids (Phe-715, Tyr-721, Tyr-738, and Tyr-741) in the methyl-binding cage of the TSN domain are required for Tudor-SN-SmB interaction. Furthermore, depletion of Tudor-SN affects the association of Sm protein with snRNAs and, as a result, inhibits the assembly of uridine-rich small ribonucleoprotein mediated by the Sm core complex in vivo. Our results reveal the molecular basis for the involvement of Tudor-SN in regulating small nuclear ribonucleoprotein biogenesis, which provides novel insight related to the biological activity of Tudor-SN. PMID:22493508

  9. Knudsen effusion mass spectrometric studies over (USn3+U3Sn7) two-phase region of U-Sn system

    Science.gov (United States)

    Manikandan, P.; Trinadh, V. V.; Bera, Suranjan; Narasimhan, T. S. Lakshmi; Ananthasivan, K.; Joseph, M.; Mudali, U. Kamachi

    2017-08-01

    Vaporisation studies over (USn3+U3Sn7) ;two-phase; field have been carried out by employing Knudsen effusion mass spectrometry (KEMS) in the temperature range of 1050-1226 K. Sn(g) was the species observed in the mass spectrum of the equilibrium vapour phase over the samples (71.5 at% Sn and 73.0 at% Sn). The partial pressure of Sn(g) was measured as a function of temperature over (USn3+U3Sn7) ;two-phase; field and the p-T relation was derived as log (pSn/Pa) = ((-14580 ± 91)/(T/K)) + (8.82 ± 0.08) (1050-1226 K). The vaporisation reaction 3USn3(s) = U3Sn7(s) + 2Sn(g) was evaluated by second law method. The Gibbs energy of formation of USn3(s) was derived as ΔfGm°(U Sn3 , s , T) (±1.8) = -173.4 + 0.055 T (K) (kJ mol-1) (1050-1226 K). The mass spectrometric studies on this system have been carried out for the first time.

  10. High temperature transport properties of BaZn{sub 2}Sn{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Aydemir, U., E-mail: uaydemir@caltech.edu [Department of Materials Science, California Institute of Technology, 1200 E California Blvd., Pasadena (United States); Department of Chemistry, Koç University, Rumelifeneri Yolu, Sariyer, Istanbul (Turkey); Zevalkink, A.; Bux, S. [Thermal Energy Conversion Technologies Group, Jet Propulsion Laboratory, 4800 Oak Grove Drive, Pasadena (United States); Snyder, G.J. [Department of Materials Science, California Institute of Technology, 1200 E California Blvd., Pasadena (United States)

    2015-02-15

    Highlights: • BaZn{sub 2}Sn{sub 2} is obtained from the solid state reaction and Sn flux methods. • BaZn{sub 2}Sn{sub 2} structure contains PbO-like {ZnSn_4_/_4} and anti-PbO-like {SnZn_4_/_4} layers. • Weak or nonbonding interaction in BaZn{sub 2}Sn{sub 2} may lead to partially filled orbitals. • BaZn{sub 2}Sn{sub 2} displays a metal-like electronic and thermal transport properties. - Abstract: BaZn{sub 2}Sn{sub 2} (space group P4/nmm, a = 4.7459(5) Å, c = 11.330(2) Å, Z = 2) crystallizes in the CaBe{sub 2}Ge{sub 2} structure type with a polyanionic framework comprising alternately stacked PbO-like {ZnSn_4_/_4} and anti-PbO-like {SnZn_4_/_4} layers along the c-axis. BaZn{sub 2}Sn{sub 2} samples were obtained by either direct solid state reaction of the elements or from a Sn-flux method in very high yield with very small amount of β-Sn as the secondary phase. The samples were characterized by powder X-ray diffraction (PXRD) and scanning electron microscopy (SEM). The chemical compositions were determined to be off-stoichiometric with Zn/Sn ratio lower than 1.0 and Sn2 atoms in the crystal structure were found to be either loosely bonded or not bonded which might lead to an incomplete charge balance. Electrical and thermal transport measurements have been performed in the temperature range 300-773 K. BaZn{sub 2}Sn{sub 2} displays the electrical resistivity of a metal (or semimetal) along with very low Seebeck coefficients and relatively high thermal conductivity.

  11. α-Eleostearic acid-containing triglycerides for a continuous assay to determine lipase sn-1 and sn-3 regio-preference.

    Science.gov (United States)

    El Alaoui, Meddy; Soulère, Laurent; Noiriel, Alexandre; Queneau, Yves; Abousalham, Abdelkarim

    2017-08-01

    Lipases are essentially described as sn-1 and sn-3 regio-selective. Actually few methods are available to measure this lipase regio-selectivity, moreover they require chiral chromatography analysis or specific derivations which are discontinuous and time consuming. In this study we describe a new, convenient, sensitive and continuous spectrophotometric method to screen lipases regio-selectivity using synthetic triglycerides (TG) containing α-eleostearic acid (9Z, 11E, 13E-octadecatrienoic acid) either at the sn-1 position [1-α-eleostearoyl-2,3-octadecyl-sn-glycerol (sn-EOO)] or at the sn-3 position [1,2-octadecyl-3-α-eleostearoyl-sn-glycerol (sn-OOE)] and coated onto the wells of microtiter plates. A non-hydrolysable ether bond, with a non UV-absorbing alkyl chain, was introduced at the other sn positions to prevent acyl chain migration during TG synthesis or lipolysis. The synthesis of TG containing α-eleostearic acid was performed from S-glycidol in six steps to obtain sn-EOO and in five steps to sn-OOE. The α-eleostearic acid conjugated triene constitutes an intrinsic chromophore and, consequently, confers the strong UV absorption properties of this free fatty acid as well as of the TG harboring it. The lipase activity on coated sn-EOO or sn-OOE was measured by the increase in the absorbance at 272nm due to the transition of α-eleostearic acid from the adsorbed to the soluble state. Human and porcine pancreatic lipases, guinea pig pancreatic lipase related protein 2, Thermomyces lanuginosus lipase, Candida antarctica lipase A and Candida antarctica lipase B were all used to validate the assay. This continuous high-throughput screening method could determine directly without any processes after lipolysis the regio-selectivity of various lipases. Copyright © 2017 Elsevier B.V. All rights reserved.

  12. Endurance of SN 2005ip after a decade: X-rays, radio and Hα like SN 1988Z require long-lived pre-supernova mass-loss

    Science.gov (United States)

    Smith, Nathan; Kilpatrick, Charles D.; Mauerhan, Jon C.; Andrews, Jennifer E.; Margutti, Raffaella; Fong, Wen-Fai; Graham, Melissa L.; Zheng, WeiKang; Kelly, Patrick L.; Filippenko, Alexei V.; Fox, Ori D.

    2017-04-01

    Supernova (SN) 2005ip was a Type IIn event notable for its sustained strong interaction with circumstellar material (CSM), coronal emission lines and infrared (IR) excess, interpreted as shock interaction with the very dense and clumpy wind of an extreme red supergiant. We present a series of late-time spectra of SN 2005ip and a first radio detection of this SN, plus late-time X-rays, all of which indicate that its CSM interaction is still strong a decade post-explosion. We also present and discuss new spectra of geriatric SNe with continued CSM interaction: SN 1988Z, SN 1993J and SN 1998S. From 3 to 10 yr post-explosion, SN 2005ip's Hα luminosity and other observed characteristics were nearly identical to those of the radio-luminous SN 1988Z, and much more luminous than SNe 1993J and 1998S. At 10 yr after explosion, SN 2005ip showed a drop in Hα luminosity, followed by a quick resurgence over several months. We interpret this Hα variability as ejecta crashing into a dense shell located ≲ 0.05 pc from the star, which may be the same shell that caused the IR echo at earlier epochs. The extreme Hα luminosities in SN 2005ip and SN 1988Z are still dominated by the forward shock at 10 yr post-explosion, whereas SN 1993J and SN 1998S are dominated by the reverse shock at a similar age. Continuous strong CSM interaction in SNe 2005ip and 1988Z is indicative of enhanced mass-loss for ∼103 yr before core collapse, longer than Ne, O or Si burning phases. Instead, the episodic mass-loss must extend back through C burning and perhaps even part of He burning.

  13. Classroom Enters the Courtroom: Stereochemistry of SN1 and SN2 Reactions in Enantiomer Patent Litigations of the Antidepressant Escitalopram.

    Science.gov (United States)

    Michman, Elisheva; Agranat, Israel

    2016-01-01

    The role of elementary stereochemistry is illustrated in the patent litigations of the blockbuster antidepressant drug escitalopram oxalate. An undergraduate student of organic chemistry would recognize the stereochemical courses of the intramolecular SN 2 and SN 1 reactions of the single-enantiomer (S)-diol intermediate in the synthesis of the blockbuster antidepressant drug escitalopram oxalate: retention of configuration of the chiral carbon atom under basic conditions and racemization under acidic conditions, respectively. He/she, in searching for a stereoselective ring-closure reaction of the enantiomeric diol, will think of an SN 2 reaction in a basic medium. From these points of view, the process claim in the enantiomer patents of escitalopram is obvious/lacks an inventive step. An organic chemistry examination problem based on this scenario is offered.

  14. First-principles study of interphase Ni3Sn in Sn-Ni alloy for anode of lithium ion battery

    Institute of Scientific and Technical Information of China (English)

    Hou Xian-Hua; Hu She-Jun; Li Wei-Shan; Ru Qiang; Yu Hong-Wen; Huang Zhao-Wen

    2008-01-01

    This paper investigates the mechanism of Li insertion into interphase NiaSn in Ni-Sn alloy for the anode of lithium ion battery by means of the first-principles plane-wave pseudopotential.Compared with other phases,it is found that the Ni3Sn has larger relative expansion ratio and lower electrochemical potential,with its specific plateaus voltage around 0.3 eV when lithium atoms are filled in all octahedral interstitial sites.and the relative expansion ratio increasing dramatically when the lithiated phase transits from octahedral interstitial sites to tetrahedral interstitial sites.So this phase is a devastating phase for whole alloy electrode materials.

  15. Constitutive Behavior of Mixed Sn-Pb/Sn-3.0Ag-0.5Cu Solder Alloys

    Science.gov (United States)

    Tucker, J. P.; Chan, D. K.; Subbarayan, G.; Handwerker, C. A.

    2012-03-01

    During the transition from Pb-containing solders to Pb-free solders, joints composed of a mixture of Sn-Pb and Sn-Ag-Cu often result from either mixed assemblies or rework. Comprehensive characterization of the mechanical behavior of these mixed solder alloys resulting in a deformationally complete constitutive description is necessary to predict failure of mixed alloy solder joints. Three alloys with 1 wt.%, 5 wt.%, and 20 wt.% Pb were selected so as to represent reasonable ranges of Pb contamination expected from different 63Sn-37Pb components mixed with Sn-3.0Ag-0.5Cu. Creep and displacement-controlled tests were performed on specially designed assemblies at temperatures of 25°C, 75°C, and 125°C using a double lap shear test setup that ensures a nearly homogeneous state of plastic strain at the joint interface. The observed changes in creep and tensile behavior with Pb additions were related to phase equilibria and microstructure differences observed through differential scanning calorimetric and scanning electron microscopic cross-sectional analysis. As Pb content increased, the steady-state creep strain rates increased, and primary creep decreased. Even 1 wt.% Pb addition was sufficient to induce substantially large creep strains relative to the Sn-3.0Ag-0.5Cu alloy. We describe rate-dependent constitutive models for Pb-contaminated Sn-Ag-Cu solder alloys, ranging from the traditional time-hardening creep model to the viscoplastic Anand model. We illustrate the utility of these constitutive models by examining the inelastic response of a chip-scale package (CSP) under thermomechanical loading through finite-element analysis. The models predict that, as Pb content increases, total inelastic dissipation decreases.

  16. Superconductivity optimization and phase formation kinetics study of internal-Sn Nb{sub 3}Sn superconducting wires

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Chaowu

    2007-07-15

    Superconductors Nb{sub 3}Sn wires are one of the most applicable cryogenic superconducting materials and the best choice for high-field magnets exceeding 10 T. One of the most significant utilization is the ITER project which is regarded as the hope of future energy source. The high-Cu composite designs with smaller number of sub-element and non-reactive diffusion barrier, and the RRP (Restacked Rod Process) internal-Sn technology are usually applied for the wire manufacturing. Such designed and processed wires were supplied by MSA/Alstom and WST/NIN in this research. The systematic investigation on internal-Sn superconducting wires includes the optimization of heat treatment (HT) conditions, phase formation and its relation with superconductivity, microstructure analysis, and the phase formation kinetics. Because of the anfractuosity of the configuration design and metallurgical processing, the MF wires are not sufficient for studying a sole factor effect on superconductivity. Therefore, four sets of mono-element (ME) wires with different Sn ratios and different third-element addition were designed and fabricated in order to explore the relationship between phase formation and superconducting performances, particularly the A15 layer growth kinetics. Different characterization technic have been used (magnetization measurements, neutron diffraction and SEM/TEM/EDX analysis). The A15 layer thicknesses of various ME samples were measured and carried out linear and non-linear fits by means of two model equations. The results have clearly demonstrated that the phase formation kinetics of Nb{sub 3}Sn solid-state reaction is in accordance with an n power relation and the n value is increased with the increase of HT temperature and the Sn ratio in the wire composite. (author)

  17. Phase transformations and phase equilibria in the Co-Sn-Ti system in the crystallization interval

    Science.gov (United States)

    Fartushna, Iu.; Bulanova, M.; Ayral, R. M.; Tedenac, J. C.; Meleshevich, K.

    2016-12-01

    The Co-Sn-Ti system was studied in the crystallization interval (below 50 at% Sn) by the methods of Scanning Electron Microscopy, microprobe analysis, Differential Thermal Analysis, X-ray diffraction. The liquidus and solidus projections and the melting diagram were constructed. Only Co2TiSn(τ1) ternary compound (Heusler phase-L12) was found in equilibria with the liquid in the concentration interval studied. Taking into account our recent data, the liquidus projection is characterized by the fields of primary crystallization of (βTi), (Co), binary-based phases Ti3Sn, Ti2Sn, Ti5Sn3, Ti6Sn5, Ti2Co, TiCo, TiCo2 (c), TiCo2 (h), TiCo3, βCo3Sn2, CoSn and ternary τ1. The solidus projection is characterized by thirteen three-phase fields, which result from invariant four-phase equilibria, five are of eutectic type (E) and eight of transition type (U) and the existence of one more region Ti2Sn3+βCoSn3+(Sn) in the solidus projection is discussed.

  18. Pulsed laser deposition of Cu-Sn-S for thin film solar cells

    DEFF Research Database (Denmark)

    Ettlinger, Rebecca Bolt; Crovetto, Andrea; Bosco, Edoardo

    Thin films of copper tin sulfide were deposited from a target of the stoichiometry Cu:Sn:S ~1:2:3 using pulsed laser deposition (PLD). Annealing with S powder resulted in films close to the desired Cu2SnS3 stoichiometry although the films remained Sn rich. Xray diffraction showed that the final...

  19. Au-SN Flip-Chip Solder Bump for Microelectronic and Optoelectronic Applications

    CERN Document Server

    Yoon, Jeong-Won; Koo, Ja-Myeong; Jung, Seung-Boo

    2007-01-01

    As an alternative to the time-consuming solder pre-forms and pastes currently used, a co-electroplating method of eutectic Au-Sn alloy was used in this study. Using a co-electroplating process, it was possible to plate the Au-Sn solder directly onto a wafer at or near the eutectic composition from a single solution. Two distinct phases, Au5Sn and AuSn, were deposited at a composition of 30at.%Sn. The Au-Sn flip-chip joints were formed at 300 and 400 degrees without using any flux. In the case where the samples were reflowed at 300 degrees, only an (Au,Ni)3Sn2 IMC layer formed at the interface between the Au-Sn solder and Ni UBM. On the other hand, two IMC layers, (Au,Ni)3Sn2 and (Au,Ni)3Sn, were found at the interfaces of the samples reflowed at 400 degrees. As the reflow time increased, the thickness of the (Au,Ni)3Sn2 and (Au,Ni)3Sn IMC layers formed at the interface increased and the eutectic lamellae in the bulk solder coarsened.

  20. Electro-oxidation of ethanol on ternary non-alloyed Pt-Sn-Pr/C catalysts

    Science.gov (United States)

    Corradini, Patricia G.; Antolini, Ermete; Perez, Joelma

    2015-02-01

    Ternary Pt-Sn-Pr/C (70:10:20), (70:15:15) and (45:45:10) electro-catalysts were prepared by a modified formic acid method, and their activity for the ethanol oxidation reaction (EOR) was compared with that of Pt-Pr/C catalysts prepared by the same methods and that of commercial Pt-Sn/C (75:25) and Pt/C catalysts. Among all the catalysts, the Pt-Sn-Pr/C (45:45:10) catalyst presented both the highest mass activity and the highest specific activity. The steady state electrochemical stability of ternary Pt-Sn-Pr catalysts increased with the surface Sn/Pt atomic ratio. Following repetitive potential cycling (RPC), the activity for ethanol oxidation of Pt-Sn-Pr/C catalysts with high surface Sn/Pt atomic ratio was considerably higher than that of the corresponding as-prepared catalysts, and increased with increasing the Sn/Pt ratio. The increase of the EOR mass activity following RPC was ascribed to the increase of either the specific activity (for the Pt-Sn-Pr/C (70:15:15) catalyst) or the electrochemically active surface area (for the Pt-Sn-Pr/C (45:45:10) catalyst). Dissolution of Sn and Pr oxides from Pt-Sn-Pr/C catalyst surface was observed following RPC.