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Sample records for l3 silicon microvertex

  1. Test beam results from the prototype L3 silicon microvertex detector

    International Nuclear Information System (INIS)

    Adam, A.; Adriani, O.; Ahlen, S.

    1993-11-01

    We report test beam results on the overall system performance of two modules of the L3 Silicon Microvertex Detector exposed to a 50 GeV pion beam. Each module consists of two AC coupled double-sided silicon strip detectors equipped with VLSI readout electronics. The associated data acquisition system comprises an 8 bit FADC, an optical data transmission circuit, a specialized data reduction processor and a synchronization module. A spatial resolution of 7.5 μm and 14 μm for the two coordinates and a detection efficiency in excess of 99% are measured. (orig.)

  2. The design and construction of a double-sided Silicon Microvertex Detector for the L3 experiment at CERN

    International Nuclear Information System (INIS)

    Adam, A.; Ambrosi, G.; Babucci, E.; Bertucci, B.; Biasini, M.; Bilei, G.M.; Caria, M.; Checcucci, B.; Easo, S.; Fiandrini, E.; Krastev, V.R.; Massetti, R.; Pauluzzi, M.; Santocchia, A.; Servoli, L.; Baschirotto, A.; Bosetti, M.; Pensotti, S.; Rancoita, P.G.; Rattaggi, M.; Terzi, G.; Battiston, R.; Bay, A.; Burger, W.J.; Extermann, P.; Perrin, E.; Susinno, G.F.; Bencze, G.Y.L.; Kornis, J.; Toth, J.; Bobbink, G.J.; Duinker, P.; Brooks, M.L.; Coan, T.E.; Kapustinsky, J.S.; Kinnison, W.W.; Lee, D.M.; Mills, G.B.; Thompson, T.C.; Busenitz, J.; DiBitonto, D.; Camps, C.; Commichau, V.; Hangartner, K.; Schmitz, P.; Chen, A.; Hou, S.; Lin, W.T.; Gougas, A.; Kim, D.; Paul, T.; Hauviller, C.; Herve, A.; Josa, I.; Landi, G.; Lebeau, M.; Lecomte, P.; Viertel, G.M.; Waldmeier, S.; Leiste, R.; Lejeune, E.; Weill, R.; Lohmann, W.; Nowak, H.; Sachwitz, M.; Schoeniech, B.; Tonisch, F.; Trowitzsch, G.; Vogt, H.; Passaleva, G.; Yeh, S.C.

    1993-01-01

    A Silicon Microvertex Detector (SMD) has been commissioned for the L3 experiment at the Large Electron-Positron colliding-beam accelerator (LEP) at the European Center for Nuclear Physics, (CERN). The SMD is a 72,672 channel, two layer barrel tracker that is comprised of 96 ac-coupled, double-sided silicon detectors. Details of the design and construction are presented

  3. The DELPHI silicon microvertex detector: from concept to physical results

    International Nuclear Information System (INIS)

    Zalewska, A.

    1994-09-01

    The silicon microvertex detector which has been used in DELPHI experiments at CERN is described in detail. The brief description of the LEP accelerator as well as the results of the physical experiment have also been presented. (author). 65 refs, 50 figs, 6 tabs

  4. Silicon micro-vertex detector for Belle II

    International Nuclear Information System (INIS)

    Mohanty, Gagan

    2013-01-01

    The Belle experiment at the KEK B-factory is Japan provided the landmark experimental confirmation of CP violation mechanism within the standard model that led to the physics Nobel prize in 2008. In its second phase, called Belle II, it would seek for the holy-grail of new physics using rare decays of B and D mesons and tau leptons as a probe, in complimentary to the direct searches carried out with the LHC experiments. An important component of this upgrade is to replace the innermost subdetector, namely the silicon micro-vertex detector (SVD). The new SVD will, like the old one, consist of four layers of double-sided silicon strip detector, but made from 6âĂİ wafers and located at higher radii as a novel, two-layer DEPFET pixel detector will be inserted very dose to the beam- pipe. Starting with the physics motivation, we discuss the design concept, fabrication and the Indian contributions toward the Belle II SVD. (author)

  5. Development of new assembly techniques for a silicon micro-vertex detector unit using the flip-chip bonding method

    International Nuclear Information System (INIS)

    Saitoh, Y.; Takeuchi, H.; Mandai, M.; Kanazawa, H.; Yamanaka, J.; Miyahara, S.; Kamiya, M.; Fujita, Y.; Higashi, Y.; Ikeda, H.; Ikeda, M.; Koike, S.; Matsuda, T.; Ozaki, H.; Tanaka, M.; Tsuboyama, T.; Avrillon, S.; Okuno, S.; Haba, J.; Hanai, H.; Mori, S.; Yusa, K.; Fukunaga, C.

    1994-01-01

    Full-size models of a detector unit for a silicon micro-vertex detector were built for the KEK B factory. The Flip-Chip Bonding (FCB) method using a new type anisotropic conductive film was examined. The structure using the FCB method successfully provides a new architecture for the silicon micro-vertex detector unit. (orig.)

  6. Radiation monitoring and beam dump system of the OPAL silicon microvertex detector

    CERN Document Server

    Braibant, S

    1997-01-01

    The OPAL microvertex silicon detector radiation monitoring and beam dump system is described. This system was designed and implemented in order to measure the radiation dose received at every beam crossing and to induce a fast beam dump if the radiation dose exceeds a given threshold.

  7. The DELPHI silicon microvertex detector: from concept to physical results; Krzemowy detektor wierzcholka w eksperymencie DELPHI; od pomyslu do wynikow z fizyki

    Energy Technology Data Exchange (ETDEWEB)

    Zalewska, A [Institute of Nuclear Physics, Cracow (Poland)

    1994-09-01

    The silicon microvertex detector which has been used in DELPHI experiments at CERN is described in detail. The brief description of the LEP accelerator as well as the results of the physical experiment have also been presented. (author). 65 refs, 50 figs, 6 tabs.

  8. The DELPHI Microvertex detector

    International Nuclear Information System (INIS)

    Bingefors, N.; Borner, H.; Boulter, R.; Caccia, M.; Chabaud, V.; Dijkstra, H.; Eerola, P.; Gross, E.; Horisberger, R.; Hubbeling, L.; Hyams, B.; Karlsson, M.; Maehlum, G.; Ratz, K.; Roditi, I.; Straver, J.; Trischuk, W.; Weilhammer, P.; Dufour, Y.; Brueckman, P.; Jalocha, P.; Kapusta, P.; Turala, M.; Zalewska, A.; Lindgren, J.; Orava, R.; Oesterberg, K.; Ronnqvist, C.; Saarikko, H.; Saarikko, J.P.; Tuuva, T.; Almagne, B. d'; Bambade, P.; Couchot, F.; Fulda, F.; Amery, A.; Booth, P.S.L.; Campion, A.R.; McNulty, R.; Smith, N.A.; Andreazza, A.; Battaglia, M.; Biffi, P.; Bonvicini, V.; Kucewicz, W.; Meroni, C.; Redaelli, N.; Stocchi, A.; Troncon, C.; Vegni, G.; Dauncey, P.; Mazzucato, M.; Pegoraro, M.; Peisert, A.; Baubillier, M.; Chauveau, J.; Silva, W. da; Genat, J.F.; Rossel, F.; Adye, T.; Apsimon, R.; Bizell, J.; Denton, L.; Kalmus, G.E.; Lidbury, J.; Seller, P.; Tyndel, M.; Dulinski, W.; Husson, D.; Lounis, A.; Schaeffer, M.; Turchetta, R.; Brenner, R.; Sundell, E.

    1993-01-01

    The DELPHI Microvertex detector, which has been in operation since the start of the 1990 LEP run, consists of three layers of silicon microstrip detectors at average radii of 6.3, 9.0 and 11.0 cm. The 73 728 readout strips, oriented along the beam, have a total active area of 0.42 m 2 . The strip pitch is 25 μm and every other strip is read out by low power charge amplifiers, giving a signal to noise ratio of 15:1 for minimum ionizing particles. On-line zero suppression results in an average data size of 4 kbyte for Z 0 events. After a mechanical survey and an alignment with tracks, the impact parameter uncertainty as determined from hadronic Z 0 decays is well described by √(69/p t ) 2 +24 2 μm, with p t in GeV/c. For the 45 GeV/c tracks from Z 0 →μ + μ - decays we find an uncertainty of 21 μm for the impact parameter, which corresponds to a precision of 8 μm per point. The stability during the run is monitored using light spots and capacitive probes. An analysis of tracks through sector overlaps provides an additional check of the stability. The same analysis also results in a value of 6 μm for the intrinsic precision of the detector. (orig.)

  9. Dismantling the silicon microstrip detector on L3

    CERN Multimedia

    Laurent Guiraud

    2001-01-01

    The silicon microstrip detector is located at the heart of the detector and must be kept cool to prevent thermal noise. The work shown here is the removal of the cooling system. L3 was dismantled as part of the closure of the entire LEP accelerator in 2000 to make way for the new LHC.

  10. The OPAL phase III microvertex detector

    International Nuclear Information System (INIS)

    De Jong, S.

    1997-01-01

    A description of the OPAL Phase III microvertex detector is given. Special emphasis is put on problems that have been encountered in the installation and operation of the different phases of the OPAL microvertex detector leading to the present Phase III detector and their cures. A short description of the new OPAL radiation monitoring and beam dump system is also given. (orig.)

  11. L3 physics at the Z resonance and a search for the Higgs particle

    International Nuclear Information System (INIS)

    Coan, T.A.; Kinnison, W.W.; Kapustinsky, J.; Shukla, J.

    1997-01-01

    This is the final report of a three-year, Laboratory-Directed Research and Development (LDRD) project at the Los Alamos National Laboratory. Electroweak interactions were studied using the L3 Detector on the Large Electron-Positron Collider (LEP) at the European Center for Nuclear Study (CERN). The specific physics studied utilized the Silicon Microvertex Detector (SMD) of L3, which Los Alamos had previously played a major role in proposing, designing, constructing, and commissioning. This detector enabled L3 to investigate short-lived mesons containing b-quarks

  12. A data acquisition system for silicon microstrip detectors

    International Nuclear Information System (INIS)

    Adriani, O.; Civinini, C.; D'Alessandro, R.; Meschini, M.; Pieri, M.; Castellini, G.

    1998-01-01

    Following initial work on the readout of the L3 silicon microvertex detector, the authors have developed a complete data acquisition system for silicon microstrip detectors for use both in their home institute and at the various test beam facilities at the CERN laboratory. The system uses extensive decoupling schemes allowing a fully floating connection to the detector. This feature has many advantages especially in the readout of the latest double-sided silicon microstrip detectors

  13. A MAPS Based Micro-Vertex Detector for the STAR Experiment

    Science.gov (United States)

    Schambach, Joachim; Anderssen, Eric; Contin, Giacomo; Greiner, Leo; Silber, Joe; Stezelberger, Thorsten; Sun, Xiangming; Szelezniak, Michal; Videbaek, Flemming; Vu, Chinh; Wieman, Howard; Woodmansee, Sam

    For the 2014 heavy ion run of RHIC a new micro-vertex detector called the Heavy Flavor Tracker (HFT) was installed in the STAR experiment. The HFT consists of three detector subsystems with various silicon technologies arranged in 4 approximately concentric cylinders close to the STAR interaction point designed to improve the STAR detector's vertex resolution and extend its measurement capabilities in the heavy flavor domain. The two innermost HFT layers are placed at radii of 2.8 cm and 8 cm from the beam line. These layers are constructed with 400 high resolution sensors based on CMOS Monolithic Active Pixel Sensor (MAPS) technology arranged in 10-sensor ladders mounted on 10 thin carbon fiber sectors to cover a total silicon area of 0.16 m2. Each sensor of this PiXeL ("PXL") sub-detector combines a pixel array of 928 rows and 960 columns with a 20.7 μm pixel pitch together with front-end electronics and zero-suppression circuitry in one silicon die providing a sensitive area of ˜3.8 cm2. This sensor architecture features 185.6 μs readout time and 170 mW/cm2 power dissipation. This low power dissipation allows the PXL detector to be air-cooled, and with the sensors thinned down to 50 μm results in a global material budget of only 0.4% radiation length per layer. A novel mechanical approach to detector insertion allows us to effectively install and integrate the PXL sub-detector within a 12 hour period during an on-going multi-month data taking period. The detector requirements, architecture and design, as well as the performance after installation, are presented in this paper.

  14. Aleph silicon microstrip vertex detector

    CERN Multimedia

    Laurent Guiraud

    1998-01-01

    This microstrip vertex locator was located at the heart of the ALEPH experiment, one of the four experiments at the Large Electron-Positron (LEP) collider. In the experiments at CERN's LEP, which ran from 1989 to 2000, modern silicon microvertex detectors, such as those used at ALEPH, monitored the production of short-lived particles close to the beam pipe.

  15. L3 + Cosmics Experiment

    CERN Multimedia

    2002-01-01

    %RE4 %title\\\\ \\\\The L3+C experiment takes advantage of the unique properties of the L3 muon spectrometer to get an accurate measurement of cosmic ray muons 30 m underground. A new muon trigger, readout and DAQ system have been installed, as well as a scintillator array covering the upper surfaces of the L3 magnet for timing purposes. The acceptance amounts to 200 $m^2 sr$. The data are collected independently in parallel with L3 running. In spring 2000 a scintillator array will be installed on the roof of the SX hall in order to estimate the primary energy of air showers associated with events observed in L3+C.\\\\ \\\\The cosmic ray muon momentum spectrum, the zenith angular dependence and the charge ratio are measured with high accuracy between 20 and 2000 GeV/c. The results will provide new information about the primary composition, the shower development in the atmosphere, and the inclusive pion and kaon (production-) cross sections (specifically the "$\\pi$/K ratio") at high energies. These data will also hel...

  16. Prototyping the read-out chain of the CBM Microvertex Detector

    International Nuclear Information System (INIS)

    Klaus, P.; Wiebusch, M.; Amar-Youcef, S.; Deveaux, M.; Koziel, M.; Michel, J.; Milanovic, B.; Müntz, C.; Tischler, T.; Stroth, J.

    2016-01-01

    The Compressed Baryonic Matter (CBM) Experiment at the future FAIR (Darmstadt/Germany) will study the phase diagram of hadronic matter in the regime of highest net-baryon densities. The fixed target experiment will explore the nuclear fireballs created in violent heavy ion reactions with a rich number of probes. To reconstruct the decay topologies of open-charm particles as well as to track low-momentum particles, an ultra-light and precise Microvertex Detector (MVD) is required. The necessary performance in terms of spatial resolution, material budget and rate capability will be reached by equipping the MVD with highly granular, radiation-hard CMOS Monolithic Active Pixel Sensors (CPS) developped at IPHC Strasbourg, which are operated in the target vacuum of the experiment. This contribution introduces the concept of the MVD and puts a focus on the latest results obtained from the R and D of the electronics and read-out chain of the device. Moreover, we briefly introduce the PRESTO project, which realises a prototype of a full size quadrant of an MVD detector station

  17. L3 detector

    Energy Technology Data Exchange (ETDEWEB)

    Anon.

    1992-01-15

    This is the final article in the CERN Courier series marking a decade of the four big experiments - Aleph, Delphi, L3 and Opal - at CERN's LEP electron-positron collider. Data-taking started soon after LEP became operational in July 1989, followed by substantial runs in 1990 and 1991. Because of the long lead times involved in today's major physics undertakings, preparations for these four experiments got underway in the early 1980s.

  18. L3 detector

    International Nuclear Information System (INIS)

    Anon.

    1992-01-01

    This is the final article in the CERN Courier series marking a decade of the four big experiments - Aleph, Delphi, L3 and Opal - at CERN's LEP electron-positron collider. Data-taking started soon after LEP became operational in July 1989, followed by substantial runs in 1990 and 1991. Because of the long lead times involved in today's major physics undertakings, preparations for these four experiments got underway in the early 1980s

  19. L3 Experiment

    CERN Multimedia

    Falagan bobillo, M A; Chen, E F A; Prokofiev, D; Prokofiev, D; Shvorab, A; Galaktionov, Y; Kopal, M; Cotorobai, F; Le goff, J; Tully, C; Van hoek, W; Nozik, V Z; Nessi-tedaldi, F; De la cruz, B; Wadhwa, M; Chtcheguelski, V; Anderhub, H B; Guo, Y; Garcia-abia, P; Piroue, P; Della marina, R; Cerrada, M; Gailloud, M; Xia, L; Chaturvedi, U K; Pistolesi, E; Zhang, S

    2002-01-01

    % L3 \\\\ \\\\ The detector consists of a large volume low field solenoid magnet, a small central tracking system with very high spatial resolution, a high resolution electromagnetic calorimeter encapsulating the central detector, a hadron calorimeter acting also as a muon filter, and high precision muon tracking chambers. \\\\ \\\\The detector is designed to measure energy and position of leptons with the highest obtainable precision allowing a mass resolution $\\Delta$m/m smaller than 2\\% in dilepton final states. Hadronic energy flux is detected by a fine-grained calorimeter, which also serves as muon filter and tracking device. \\\\ \\\\The outer boundary of the detector is given by the iron return-yoke of a conventional magnet, using aluminium plates for the coil. The field is 0.5~T over a length of 12~m. This large volume allows a high precision muon momentum measurement, performed by three sets of drift chambers in the central detector region. From the multiple measurement of the coordinate in the bending plane a m...

  20. Particle identification by silicon detectors

    International Nuclear Information System (INIS)

    Santos, Denison de Souza

    1997-01-01

    A method is developed for the evaluation of the energy loss, dE/dx, of a charged particle traversing a silicon strip detector. The method is applied to the DELPHI microvertex detector leading to diagrams of dE/dx versus momentum for different particles. The specific case of pions and protons is treated and the most probable value of dE/dx and the width of the dE/dx distribution for those particles in the momentum range of 0.2 GeV/c to 1.5 GeV/c, are obtained. The resolution found is 13.4 % for particles with momentum higher than 2 GeV/c and the separation power is 2.9 for 1.0 GeV/c pions and protons. (author)

  1. Cutting the L3 torque tube

    CERN Multimedia

    Laurent Guiraud

    2001-01-01

    Workers cut the torque tube, with a plasma-cutting device on the L3 experiment, which closed with the LEP accelerator in 2000. L3 was housed in a huge red solenoid, which will be taken over by the ALICE detector when the new LHC is completed.

  2. A luminosity measurement at LEP using the L3 detector

    Energy Technology Data Exchange (ETDEWEB)

    Koffeman, E.N.

    1996-06-25

    To perform high precision measurements at particle colliders it is crucial to know the exact intensity of the colliding beams. In particle physics this quantity is generally referred to as the luminosity. The determination of the luminosity in one of the experiments (L3) is the topic of this thesis. The implementation and the use of a silicon strip detector in L3, will be described in detail. In chapter one the most important parameters measured at LEP are discussed, preceded by a short introduction to the Standard Model. The process generally used for luminosity measurements in electron positron colliders is small angle Bhabha scattering. This process is discussed at the end of chapter one. In chapter two the characteristics of the collider and the L3 experiment are given. Together with the signature of the small angle Bhabha scattering, these experimental conditions determine the specifications for the design of the luminosity monitor. The general features of silicon strip detectors for their application in high energy physics are presented in chapter three. Some special attention is given to the behaviour of the sensors used for the tracking detector in the luminosity monitor. The more specific design details of the luminosity monitor are constricted to chapter four. In chapter five the conversion from detector signals into ccordinates relevant for the analysis is explained. The selection of the small angle Bhabha scattering events and the subsequent determination of the luminosity, are presented in chapter six. Systematic uncertainties are carefully studied. Important for a good understanding of the Bhabha selection are the events where a photon is produced in the scattering process. These events are separately studied. In chapter seven a comparison is presented between the radiative events observed in the data and their modelling in the Bhlumi Monte Carlo programme. (orig.).

  3. A luminosity measurement at LEP using the L3 detector

    International Nuclear Information System (INIS)

    Koffeman, E.N.

    1996-01-01

    To perform high precision measurements at particle colliders it is crucial to know the exact intensity of the colliding beams. In particle physics this quantity is generally referred to as the luminosity. The determination of the luminosity in one of the experiments (L3) is the topic of this thesis. The implementation and the use of a silicon strip detector in L3, will be described in detail. In chapter one the most important parameters measured at LEP are discussed, preceded by a short introduction to the Standard Model. The process generally used for luminosity measurements in electron positron colliders is small angle Bhabha scattering. This process is discussed at the end of chapter one. In chapter two the characteristics of the collider and the L3 experiment are given. Together with the signature of the small angle Bhabha scattering, these experimental conditions determine the specifications for the design of the luminosity monitor. The general features of silicon strip detectors for their application in high energy physics are presented in chapter three. Some special attention is given to the behaviour of the sensors used for the tracking detector in the luminosity monitor. The more specific design details of the luminosity monitor are constricted to chapter four. In chapter five the conversion from detector signals into ccordinates relevant for the analysis is explained. The selection of the small angle Bhabha scattering events and the subsequent determination of the luminosity, are presented in chapter six. Systematic uncertainties are carefully studied. Important for a good understanding of the Bhabha selection are the events where a photon is produced in the scattering process. These events are separately studied. In chapter seven a comparison is presented between the radiative events observed in the data and their modelling in the Bhlumi Monte Carlo programme. (orig.)

  4. L3 experiment dismantling at LEP

    CERN Multimedia

    Laurent Guiraud

    2001-01-01

    The last muon chamber is removed from the L3 experiment at the LEP collider, which was in operation from 1989 to 2000. The large red magnet yoke will be reused by the ALICE experiment when the LHC is constructed.

  5. Recent results from the L3 Collaboration

    International Nuclear Information System (INIS)

    Ting, S.C.C.

    1993-01-01

    In this report we summarize the recent results from the L3 Collaboration. The L3 Collaboration is one of the largest international collaborations in high energy physics and consists of many universities from the United States including University of Michigan, M.I.T., Caltlech, Princeton and Harvard, and leading research centers from France, Germany, Switzerland, Holland, India, China, Korea, Russia and other nations

  6. The Forward Muon Detector of L3

    CERN Document Server

    Adam, A; Alarcon, J; Alberdi, J; Alexandrov, V S; Aloisio, A; Alviggi, M G; Anderhub, H; Ariza, M; Azemoon, T; Aziz, T; Bakker, F; Banerjee, S; Banicz, K; Barcala, J M; Becker, U; Berdugo, J; Berges, P; Betev, B L; Biland, A; Bobbink, Gerjan J; Böck, R K; Böhm, A; Borisov, V S; Bosseler, K; Bouvier, P; Brambilla, Elena; Burger, J D; Burgos, C; Buskens, J; Carlier, J C; Carlino, G; Causaus, J; Cavallo, N; Cerjak, I; Cerrada-Canales, M; Chang, Y H; Chen, H S; Chendvankar, S R; Chvatchkine, V B; Daniel, M; De Asmundis, R; Decreuse, G; Deiters, K; Djambazov, L; Duraffourg, P; Erné, F C; Esser, H; Ezekiev, S; Faber, G; Fabre, M; Fernández, G; Freudenreich, Klaus; Fritschi, M; García-Abia, P; González, A; Gurtu, A; Gutay, L J; Haller, C; Herold, W D; Herrmann, J M; Hervé, A; Hofer, H; Höfer, M; Hofer, T; Homma, J; Horisberger, Urs; Horváth, I L; Ingenito, P; Innocente, Vincenzo; Ioudine, I; Jaspers, M; de Jong, P; Kästli, W; Kaspar, H; Kitov, V; König, A C; Koutsenko, V F; Lanzano, S; Lapoint, C; Lebedev, A; Lecomte, P; Lista, L; Lübelsmeyer, K; Lustermann, W; Ma, J M; Milesi, M; Molinero, A; Montero, A; Moore, R; Nahn, S; Navarrete, J J; Okle, M; Orlinov, I; Ostojic, R; Pandoulas, D; Paolucci, P; Parascandolo, P; Passeggio, G; Patricelli, S; Peach, D; Piccolo, D; Pigni, L; Postema, H; Puras, C; Ren, D; Rewiersma, P A M; Rietmeyer, A; Riles, K; Risco, J; Robohm, A; Rodin, J; Röser, U; Romero, L; Van Rossum, W; Rykaczewski, H; Sarakinos, M E; Sassowsky, M; Shchegelskii, V; Scholz, N; Schultze, K; Schuylenburg, H; Sciacca, C; Seiler, P G; Siedenburg, T; Siedling, R; Smith, B; Soulimov, V; Sadhakar, K; Syben, O; Tonutti, M; Udovcic, A; Ulbricht, J; Veillet, L; Vergain, M; Viertel, Gert M; Von Gunten, H P; Vorobyov, A A; Vrankovic, V; De Waard, A; Waldmeier-Wicki, S; Wallraff, W; Walter, H C; Wang, J C; Wei, Z L; Wetter, R; Willmott, C; Wittgenstein, F; Wu, R J; Yang, K S; Zhou, L; Zhou, Y; Zuang, H L

    1996-01-01

    The Forward-Backward muon detector of the L3 experiment is presented. Intended to be used for LEP 200 physics, it consists of 96 self-calibrating drift chambers of a new design enclosing the magnet pole pieces of the L3 solenoid. The pole pieces are toroidally magnetized to form two independent analyzing spectrometers. A novel trigger is provided by resistive plate counters attached to the drift chambers. Details about the design, construction and performance of the whole system are given together with results obtained during the 1995 running at LEP.

  7. L3-forward-backward muon spectrometer

    International Nuclear Information System (INIS)

    Deiters, K.

    1995-01-01

    The performance of the distance sensors could be successfully tested in the L3 detector. One sensor of each type got installed together with a precision sensor. This sensor is based on a glass rod with optical marks which are scanned by a system of light diodes. It has a measurement accuracy of 1 μm. We proved, that the desired accuracy of 10 μm was reached and that the sensors work in the environment of the L3 detector. (author) 11 figs., 5 refs

  8. Cognitive approaches to L3 acquisition

    Directory of Open Access Journals (Sweden)

    Maria del Pilar Garcia Mayo

    2012-06-01

    Full Text Available Multilingualism has established itself as an area of systematic research in linguistic studies over the last two decades. The multilingual phenomenon can be approached from different perspectives: educational, formal linguistic, neurolinguistic, psycholinguistic and sociolinguistic, among others. This article presents an overview of cognitive (psychological and formal linguistic approaches to third language (L3 acquisition where the assumption is that language acquisition is a complex multi-faceted process. After identifying what is meant by L3, the article briefly reviews the major issues addressed from both the psycholinguistic strand and the emerging L3 linguistic strand and concentrates on those aspects that are in need of further research in both.El plurilingüismo se ha ganado su propia área de investigación dentro de los estudios de lingüística en las últimas dos décadas. El fenómeno se puede abordar desde perspectivas diferentes: educativa, lingüística de carácter formal, neurolingüística, psicolingüística y sociolingüística, entre otras. Este artículo presenta una visión general de dos perspectivas cognitivas, la psicológica y la procedente de la lingüística formal, al tema de la adquisición de la tercera lengua (L3. Ambas perspectivas comparten la asunción de que la adquisición del lenguaje es un proceso complejo y con varias vertientes. Después de identificar lo que entendemos por L3, el artículo revisa de forma sucinta los principales temas que se han tratado tanto desde la perspectiva psicolingüística como desde la más emergente perspectiva lingüística en materia de L3 y se concentra en aquellos aspectos que consideramos que necesitan mayor investigación en ambas.

  9. Kosmische Myonen im L3-Detektor

    CERN Document Server

    Saidi, Rachid

    2000-01-01

    Durch die Untersuchung des Mondschattens in der primaren kosmischen Strahlung konnen Informationen uber die Winkelau osung des L3-Detektors gewonnen werden, sowie mit ausreichender Statistik das Verhaltnis von Antiprotonen zu Protonen fur Protonenergien um 1 TeV abgeschatzt werden. Die Bahn der Protonen vom Mond zur Erde wird durch folgende Eekte beein ut: Das Magnetfeld zwischen Mond und Erde lenkt die geladenen Teilchen ab. Fur 1 TeV Protonenenergie wurde ein Wert von 1:70 abgeschatzt. Die Mehrfachstreuung in der 30 m dicken Erdschicht uber L3 verursacht eine Winkelverschmierung von 3.5 mrad fur 100 GeV Myonen. Der Winkel zwischen Proton und den sekundaren Myonen, die durch Wechselwirkung von primaren Kernen mit den oberen Schichten der Atmosphare entstehen, betragt 3 mrad fur 100 GeV Myonen. Die berechnete Winkelau osung dieser Untersuchung fur den L3-Detektor mit verschiedenen Energien betragt einen Wert von 0:170 0:030 fur das starkste Myonschattensignal bei 150 GeV Myonenenergie. Dabei wurde fur den Mon...

  10. Asymmetric light transmission based on coupling between photonic crystal waveguides and L1/L3 cavity

    Science.gov (United States)

    Zhang, Jinqiannan; Chai, Hongyu; Yu, Zhongyuan; Cheng, Xiang; Ye, Han; Liu, Yumin

    2017-09-01

    A compact design of all-optical diode with mode conversion function based on a two-dimensional photonic crystal waveguide and an L1 or L3 cavity is theoretically investigated. The proposed photonic crystal structures comprise a triangular arrangement of air holes embedded in a silicon substrate. Asymmetric light propagation is achieved via the spatial mode match/mismatch in the coupling region. The simulations show that at each cavity's resonance frequency, the transmission efficiency of the structure with the L1 and L3 cavities reach 79% and 73%, while the corresponding unidirectionalities are 46 and 37 dB, respectively. The functional frequency can be controlled by simply adjusting the radii of specific air holes in the L1 and L3 cavities. The proposed structure can be used as a frequency filter, a beam splitter and has potential applications in all-optical integrated circuits.

  11. The Effects of L2 Experience on L3 Perception

    Science.gov (United States)

    Onishi, Hiromi

    2016-01-01

    This study examines the influence of experience with a second language (L2) on the perception of phonological contrasts in a third language (L3). This study contributes to L3 phonology by examining the influence of L2 phonological perception abilities on the perception of an L3 at the beginner level. Participants were native speakers of Korean…

  12. Particle identification by silicon detectors; Identificacao de particulas por detetores de silicio

    Energy Technology Data Exchange (ETDEWEB)

    Santos, Denison de Souza

    1997-07-01

    A method is developed for the evaluation of the energy loss, dE/dx, of a charged particle traversing a silicon strip detector. The method is applied to the DELPHI microvertex detector leading to diagrams of dE/dx versus momentum for different particles. The specific case of pions and protons is treated and the most probable value of dE/dx and the width of the dE/dx distribution for those particles in the momentum range of 0.2 GeV/c to 1.5 GeV/c, are obtained. The resolution found is 13.4 % for particles with momentum higher than 2 GeV/c and the separation power is 2.9 for 1.0 GeV/c pions and protons. (author)

  13. Analysis list: l(3)mbt [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available l(3)mbt Cell line,Larvae + dm3 http://dbarchive.biosciencedbc.jp/kyushu-u/dm3/target/l(3)mbt.1.tsv http:...//dbarchive.biosciencedbc.jp/kyushu-u/dm3/target/l(3)mbt.5.tsv http://dbarchive.bioscie...ncedbc.jp/kyushu-u/dm3/target/l(3)mbt.10.tsv http://dbarchive.biosciencedbc.jp/kyushu-u/dm3/colo/l(3)mbt.Cell_line.tsv,http:...//dbarchive.biosciencedbc.jp/kyushu-u/dm3/colo/l(3)mbt.Larvae.tsv http:...//dbarchive.biosciencedbc.jp/kyushu-u/dm3/colo/Cell_line.gml,http://dbarchive.biosciencedbc.jp/kyushu-u/dm3/colo/Larvae.gml ...

  14. Recent results from L3+COSMICS at CERN L3 collaboration

    CERN Document Server

    Bertaina, M

    2002-01-01

    11x10 sup 9 cosmic ray muon events above 20 GeV have been collected with the L3+C detector at LEP, CERN, in 1999 and 2000. During the last year the energy, core position and direction of the air showers causing the observed muons could be derived for part of the data. Preliminary results for the vertical muon flux and charge ratio depending on the muon momentum are shown. The influence of the air shower energy on the muon properties is studied. A search for muon rate increase during the solar flare of the 14 sup t sup h July 2000 is performed. Meteorological effects on cosmic ray intensity measurements are discussed.

  15. Test beam results for an upgraded forward tagger of the L3 experiment at LEP II

    International Nuclear Information System (INIS)

    Chemarin, M.; Depasse, P.; Fay, J.; Felcini, M.; Fredj, L.; Ille, B.; Nessi-Tedaldi, F.; Susinno, G.F.

    1994-01-01

    We have tested new scintillator modules with silicon photodiode readout for the upgraded Active Lead Rings (ALR) of the L3 detector at LEP II. Results are presented from data recorded in muon and electron test beams with particular emphasis on the light production and collection as a function of the particle impact position on the scintillator modules. The results from the beam test data will be used for the design of the readout and trigger electronics in conjunction with the required ALR performance as an electron tagger and beam background monitor at LEP II. ((orig.))

  16. Technicians dismantle the inner section of L3

    CERN Multimedia

    Laurent Guiraud

    2001-01-01

    The technicians are dismantling the forward tracking chamber located at the heart of the L3 detector. This formed part of the hadronic calorimeter, which is used for measuring particle energies. L3 was an experiment at the LEP collider that ran from 1989 to 2000.

  17. GLONASS CDMA L3 ambiguity resolution and positioning

    NARCIS (Netherlands)

    Zaminpardaz, Safoora; Teunissen, P.J.G.; Nadarajah, Nandakumaran

    2016-01-01

    A first assessment of GLONASS CDMA L3 ambiguity resolution and positioning performance is provided. Our analyses are based on GLONASS L3 data from the satellite pair SVNs 755-801, received by two JAVAD receivers at Curtin University, Perth, Australia. In our analyses, four different versions of

  18. LOFT/L3-, Loss of Fluid Test, 7. NRC L3 Small Break LOCA Experiment

    International Nuclear Information System (INIS)

    1992-01-01

    1 - Description of test facility: The LOFT Integral Test Facility is a scale model of a LPWR. The intent of the facility is to model the nuclear, thermal-hydraulic phenomena which would take place in a LPWR during a LOCA. The general philosophy in scaling coolant volumes and flow areas in LOFT was to use the ratio of the LOFT core [50 MW(t)] to a typical LPWR core [3000 MW(t)]. For some components, this factor is not applied; however, it is used as extensively as practical. In general, components used in LOFT are similar in design to those of a LPWR. Because of scaling and component design, the LOFT LOCA is expected to closely model a LPWR LOCA. 2 - Description of test: This was the seventh in the NRC L3 Series of small-break LOCA experiments. A 2.5-cm (10-in.) cold-leg non-communicative-break LOCA was simulated. The experiment was conducted on 20 June 1980

  19. Silicone metalization

    Energy Technology Data Exchange (ETDEWEB)

    Maghribi, Mariam N. (Livermore, CA); Krulevitch, Peter (Pleasanton, CA); Hamilton, Julie (Tracy, CA)

    2008-12-09

    A system for providing metal features on silicone comprising providing a silicone layer on a matrix and providing a metal layer on the silicone layer. An electronic apparatus can be produced by the system. The electronic apparatus comprises a silicone body and metal features on the silicone body that provide an electronic device.

  20. L3 English acquisition in Denmark and Greenland

    DEFF Research Database (Denmark)

    Spellerberg, Stine Marie

    2011-01-01

    This paper presents findings of gender-related tendencies found in a study of factors influential in third language acquisition of English in Denmark and Greenland. A survey consisting of a questionnaire and an English test was carried out amongst pupils in their last year of compulsory schooling...... in Copenhagen, Denmark, and Nuuk, Greenland. In total, responses from 187 pupils were included, some of which were responses from pupils learning English as a second language; these respondents were included for comparisons (Copenhagen: L2 learners N =59, L3 learners N=32; Nuuk: L3 learners N=96; age: 14......' degree of English classroom anxiety. The results differentiate the view that L3 learners as a group do less well in English than L2 learner peers, warranting further research into gender-related tendencies and extra focus on the English acquisition of L3 learner boys in particular in the Danish context....

  1. IceBridge DMS L3 Photogrammetric DEM

    Data.gov (United States)

    National Aeronautics and Space Administration — The IceBridge DMS L3 Photogrammetric DEM (IODMS3) data set contains gridded digital elevation models and orthorectified images of Greenland derived from the Digital...

  2. Curcumin analog L3 alleviates diabetic atherosclerosis by multiple effects.

    Science.gov (United States)

    Zheng, Bin; Yang, Liu; Wen, Caixia; Huang, Xiuwang; Xu, Chenxia; Lee, Kuan-Han; Xu, Jianhua

    2016-03-15

    L3, an analog of curcumin, is a compound isolated from a traditional Chinese medicine Turmeric. In this paper, we aims to explore the efficacy of L3 on diabetic atherosclerosis and the related mechanism. The effect of L3 was studied on glucose and lipid metabolism, antioxidant status, atherosclerosis-related indexes and pathological changes of main organs in the mice model of diabetes induced by streptozotocin and high-fat diet. The results showed that L3 treatment could meliorate dyslipidemia and hyperglycemia, reduce oxidative stress, enhance the activity of antioxidases, increase the nitric oxide level in plasma and aortic arch, decrease the production of reactive oxygen species in pancreas and lectin-like oxidized low-density lipoprotein receptor-1 expression in aortic arch, and meliorate the fatty and atherosclerotic degeneration in aortic arch, thereby preventing the development of diabetes and its complications. These results suggested that L3 can alleviate the diabetic atherosclerosis by multiple effects. This study provided scientific basis for the further research and clinical application of L3. Copyright © 2016 Elsevier B.V. All rights reserved.

  3. Analysis of Multi Muon Events in the L3 Detector

    CERN Document Server

    Schmitt, Volker

    2000-01-01

    The muon density distribution in air showers initiated by osmi parti les is sensitive to the hemi al omposition of osmi rays. The density an be measured via the multipli ity distribution in a nite size dete tor, as it is L3. With a shallow depth of 30 meters under ground, the dete tor provides an ex ellent fa ility to measure a high muon rate, but being shielded from the hadroni and ele troni shower omponent. Subje t of this thesis is the des ription of the L3 Cosmi s experiment (L3+C), whi h is taking data sin e May 1999 and the analysis of muon bundles in the large magneti spe trometer of L3. The new osmi trigger and readout system is brie y des ribed. The in uen e of dierent primaries on the multipli ity distribution has been investigated using Monte Carlo event samples, generated with the CORSIKA program. The simulation results showed that L3+C measures in the region of the \\knee" of the primary spe trum of osmi rays. A new pattern re ognition has been developed and added to the re onstru tion ode, whi h ...

  4. The muon filter of the L3 detector

    International Nuclear Information System (INIS)

    Adriani, O.; Bocciolini, M.; Cartacci, A.M.; Civinini, C.; D'Alessandro, R.; Gallo, E.; Landi, G.; Marchionni, A.; Meschini, M.; Monteleoni, B.; Pieri, M.; Spillantini, P.; Wang, Y.F.; Florence Univ.

    1991-01-01

    In this article we describe the outer part (Muon Filter) of the Hadron Calorimeter of the L3 detector. Construction and performance of the brass chambers, which form the sensitive part of the detector, are reviewed. We also report the results from data taken on two beam tests, at CERN. (orig.)

  5. Bilingual Education and L3 Learning: Metalinguistic Advantage or Not?

    Science.gov (United States)

    Rutgers, Dieuwerke; Evans, Michael

    2017-01-01

    Metalinguistic skills are highlighted in the literature as providing bilinguals with an advantage in additional language (L3) learning. The extent to which this may apply to bilingual education and content-and-language-integrated-learning settings, however, is as yet little understood. This article reports on a study exploring and comparing the…

  6. Mutations in the bacterial ribosomal protein l3 and their association with antibiotic resistance

    DEFF Research Database (Denmark)

    Klitgaard, Rasmus N; Ntokou, Eleni; Nørgaard, Katrine

    2015-01-01

    -type genes with mutated L3 genes in a chromosomal L3 deletion strain. In this way, the essential L3 gene is available for the bacteria while allowing replacement of the wild type with mutated L3 genes. This enables investigation of the effect of single mutations in Escherichia coli without a wild-type L3...

  7. The muon spectrometer of the L3 detector at LEP

    International Nuclear Information System (INIS)

    Peng, Y.

    1988-01-01

    In this thesis the construction of the muon spectrometer of the L3 detector is described, one of the four detectors presently being prepared for experimentation at LEP. This accelerator is built at CERN, Geneva, and is due to start operation in July 1989. One of the unique features of the L3 experiment is the measurement of the momentum of the muons produced in the e + e - collisions iwht an independent muon spectrometer. This makes it possible to study final states involving muons, with high accuracy (δP/P = 2% at 45 GeV). The muon spectrometer consists of 80 large drift chambers, arranged in 16 modules or 'octants', that fill a cylindrical volume of 12 m in length, 5 m inner diameter and 12 m outer diameter. The design of the drift chambers, the construction, the alignment procedure and the test results for the complete octants are described. 51 refs.; 57 figs.; 16 tabs

  8. Silicon detectors

    International Nuclear Information System (INIS)

    Klanner, R.

    1984-08-01

    The status and recent progress of silicon detectors for high energy physics is reviewed. Emphasis is put on detectors with high spatial resolution and the use of silicon detectors in calorimeters. (orig.)

  9. Hydrogen Learning for Local Leaders – H2L3

    Energy Technology Data Exchange (ETDEWEB)

    Serfass, Patrick [Technology Transition Corporation, Washington, DC (United States)

    2017-03-30

    The Hydrogen Learning for Local Leaders program, H2L3, elevates the knowledge about hydrogen by local government officials across the United States. The program reaches local leaders directly through “Hydrogen 101” workshops and webinar sessions; the creation and dissemination of a unique report on the hydrogen and fuel cell market in the US, covering 57 different sectors; and support of the Hydrogen Student Design Contest, a competition for interdisciplinary teams of university students to design hydrogen and fuel cell systems based on technology that’s currently commercially available.

  10. Developments toward a silicon strip tracker for the PANDA experiment

    International Nuclear Information System (INIS)

    Zaunick, Hans-Georg

    2013-01-01

    The PANDA detector at the future FAIR facility in Darmstadt will be a key experiment in the understanding of the strong interaction at medium energies where perturbative models fail to describe the quark-quark interaction. An important feature of the detector system is the ability to reconstruct secondary decay vertices of short-lived intermediate states by means of a powerful particle tracking system with the the Micro-Vertex Detector (MVD) as central element to perform high-resolution charmonium and open-charm spectroscopy. The MVD is conceived with pixel detectors in the inner parts and double-sided silicon strip detectors at the outer half in a very lightweight design. The PANDA detector system shall be operated in a self-triggering broadband acquisition mode. Implications on the read-out electronics and the construction of the front-end assemblies are analyzed and evaluation of prototype DSSD-detectors wrt. signal-to-noise ratio, noise figures, charge sharing behavior, spatial resolution and radiation degradation discussed. Methods of electrical sensor characterization with different measurement setups are investigated which may be useful for future large-scale QA procedures. A novel algorithm for recovering multiple degenerate cluster hit patterns of double-sided strip sensors is introduced and a possible architecture of a Module Data Concentrator ASIC (MDC) aggregating multiple front-end data streams conceived. A first integrative concept for the construction and assembly of DSSD modules for the barrel part of the MVD is introduced as a conclusion of the thesis. Furthermore, a detailed description of a simplified procedure for the calculation of displacement damage in compound materials is given as reference which was found useful for the retrieval of non-ionizing energy loss for materials other than silicon.

  11. Synthesis and aqueous phase behavior of thermoresponsive biodegradable poly(D,L-3-methylglycolide)-block-poly(ethyelene glycol)-block-poly(D,L-3-methylglycolide) triblock copolymers

    NARCIS (Netherlands)

    Zhong, Zhiyuan; Dijkstra, Pieter J.; Feijen, Jan; Kwon, Young-Min; Bae, You Han; Kim, Sung Wan

    2002-01-01

    Novel biodegradable thermosensitive triblock copolymers of poly(D,L-3-methylglycolide)-block-poly(ethylene glycol)-block-poly(D,L-3-methylglycolide) (PMG-PEG-PMG) have been synthesized. Ring-opening polymerization of D,L-3-methyl-glycolide (MG) initiated with poly(ethylene glycol) (PEG) and

  12. The soviet manned lunar program N1-L3

    Science.gov (United States)

    Lardier, Christian

    2018-01-01

    The conquest of space was marked by the Moon race in which the two superpowers, the United States and the Soviet Union, were engaged in the 1960s. On the American side, the Apollo program culminated with the Man on the Moon in July 1969, 50 years ago. At the same time, the Soviet Union carried out a similar program which was kept secret for 20 years. This N1-L3 program was unveiled in August 1989. Its goal was to arrive on the Moon before the Americans. It included an original super-rocket, development of which began in June 1960. But this program became a national priority only in August 1964 and the super-rocket failed four times between 1969 and 1972. This article analyses the reasons for these failures, which led to the cancellation of the program in 1974.

  13. Multilingual students' acquisition of English as their L3

    DEFF Research Database (Denmark)

    Samal Jalal, Rawand

    with regard to English proficiency. The current study conducted in Denmark investigated multilingual students’ English proficiency compared to their monolingual peers’, and examined which learning strategies proficient L3 learners utilize. The sample was comprised of 9-graders who are monolinguals (N = 82......) and multilinguals with Turkish L1 (N = 134). The participants provided basic demographic information, and were tested in their general English proficiency. Out of the 70 multilinguals with Turkish L1, 12 participants were selected for further testing; i.e., the four participants who scored the lowest, four...... participants with intermediate scores, and the four who scored the highest, on a test of English proficiency. These participants were tested in their L1 (Turkish) and their L2 (Danish) in order to examine whether their proficiency in their L1 and L2 was associated with English proficiency. Furthermore, the 12...

  14. Tau Polarization Measurement in the L3 Detector

    International Nuclear Information System (INIS)

    Garcia, P.

    1996-01-01

    The Polarization asymmetry (A p ) measurement can be obtained from the energy spectra of the tau lepton (tau) decay products. This measurement provides a precise determination of the weak mixing angel (sin''2 tilde char theta w ), one of the Standard Model fundamental parameters. Tau leptons are produced at LEP in e''+e''-yields tilde char f interactions at a center of mass energy of the order of the Z boson mass. In order to get A p we have calculated the analytical formulae of the tau decay products energy spectra, including radiative corrections, for all of the one prong tau decay channels. We have also extended this analytical formalism to the detector level, including the selection criteria effectsand the detector resolution (calibration) in the analytical expressions.Detailed studies have been performed concerning our measurement using this formalism. From the data collected with the L3 detector between 1991 and 1994, which corresponds to an integrated luminosity of 118.8 pb''1 at a center of mass energy of the order of the Z mass, we have identified and selected the following tau decay channel samples: tau yields e nu tilde char nu, tau yields mu nu tilde char nu, tau yields pi/K nu y tau yields p/K*nu. From the analysis of these samples we get the tau polarization asymmetry measurement: A p =3D0.143+-0.014+-0.010, which corresponds to a value of sin''2 tilde char theta w =3D0.2320+-0.0018+-0.0013. (Author) 24 refs

  15. LOFT/L3-6, Loss of Fluid Test, 6. NRC L3 Small Break LOCA Experiment

    International Nuclear Information System (INIS)

    1992-01-01

    1 - Description of test facility: The LOFT Integral Test Facility is a scale model of a LPWR. The intent of the facility is to model the nuclear, thermal-hydraulic phenomena which would take place in a LPWR during a LOCA. The general philosophy in scaling coolant volumes and flow areas in LOFT was to use the ratio of the LOFT core [50 MW(t)] to a typical LPWR core [3000 MW(t)]. For some components, this factor is not applied; however, it is used as extensively as practical. In general, components used in LOFT are similar in design to those of a LPWR. Because of scaling and component design, the LOFT LOCA is expected to closely model a LPWR LOCA. 2 - Description of test: This was the sixth in the NRC L3 Series of small-break LOCA experiments. A 10-cm (2.5-in.) cold-leg non-communicative-break LOCA was simulated. Pumps were running. The experiment was conducted on 10 December 1980

  16. LOFT/L3-5, Loss of Fluid Test, 5. NRC L3 Small Break LOCA Experiment

    International Nuclear Information System (INIS)

    1991-01-01

    1 - Description of test facility: The LOFT Integral Test Facility is a scale model of a LPWR. The intent of the facility is to model the nuclear, thermal-hydraulic phenomena which would take place in a LPWR during a LOCA. The general philosophy in scaling coolant volumes and flow areas in LOFT was to use the ratio of the LOFT core [50 MW(t)] to a typical LPWR core [3000 MW(t)]. For some components, this factor is not applied; however, it is used as extensively as practical. In general, components used in LOFT are similar in design to those of a LPWR. Because of scaling and component design, the LOFT LOCA is expected to closely model a LPWR LOCA. 2 - Description of test: This was the fifth in the NRC L3 Series of small-break LOCA experiments. A 10-cm (2.5-in.) cold-leg non-communicative-break LOCA was simulated. Pumps were shut off. The experiment was conducted on 29 September 1980

  17. L1 and L2 Distance Effects in Learning L3 Dutch

    Science.gov (United States)

    Schepens, Job J.; der Slik, Frans; Hout, Roeland

    2016-01-01

    Many people speak more than two languages. How do languages acquired earlier affect the learnability of additional languages? We show that linguistic distances between speakers' first (L1) and second (L2) languages and their third (L3) language play a role. Larger distances from the L1 to the L3 and from the L2 to the L3 correlate with lower…

  18. Transcriptomes and pathways associated with infectivity, survival and immunogenicity in Brugia malayi L3

    Directory of Open Access Journals (Sweden)

    Spiro David

    2009-06-01

    Full Text Available Abstract Background Filarial nematode parasites cause serious diseases such as elephantiasis and river blindness in humans, and heartworm infections in dogs. Third stage filarial larvae (L3 are a critical stage in the life cycle of filarial parasites, because this is the stage that is transmitted by arthropod vectors to initiate infections in mammals. Improved understanding of molecular mechanisms associated with this transition may provide important leads for development of new therapies and vaccines to prevent filarial infections. This study explores changes in gene expression associated with the transition of Brugia malayi third stage larvae (BmL3 from mosquitoes into mammalian hosts and how these changes are affected by radiation. Radiation effects are especially interesting because irradiated L3 induce partial immunity to filarial infections. The underlying molecular mechanisms responsible for the efficacy of such vaccines are unkown. Results Expression profiles were obtained using a new filarial microarray with 18, 104 64-mer elements. 771 genes were identified as differentially expressed in two-way comparative analyses of the three L3 types. 353 genes were up-regulated in mosquito L3 (L3i relative to cultured L3 (L3c. These genes are important for establishment of filarial infections in mammalian hosts. Other genes were up-regulated in L3c relative to L3i (234 or irradiated L3 (L3ir (22. These culture-induced transcripts include key molecules required for growth and development. 165 genes were up-regulated in L3ir relative to L3c; these genes encode highly immunogenic proteins and proteins involved in radiation repair. L3ir and L3i have similar transcription profiles for genes that encode highly immunogenic proteins, antioxidants and cuticle components. Conclusion Changes in gene expression that normally occur during culture under conditions that support L3 development and molting are prevented or delayed by radiation. This may explain

  19. Tau Polarization Measurement in the L3 Detector; Medida de la polarizacion del Tau en el detector L3

    Energy Technology Data Exchange (ETDEWEB)

    Garcia, P

    1996-06-01

    The Polarization asymmetry (A{sub p}) measurement can be obtained from the energy spectra of the tau lepton (tau) decay products. This measurement provides a precise determination of the weak mixing angel (sin``2 tilde char theta{sub w}), one of the Standard Model fundamental parameters. Tau leptons are produced at LEP in e``+e``-yields tilde char f interactions at a center of mass energy of the order of the Z boson mass. In order to get A{sub p} we have calculated the analytical formulae of the tau decay products energy spectra, including radiative corrections, for all of the one prong tau decay channels. We have also extended this analytical formalism to the detector level, including the selection criteria effects and the detector resolution (calibration) in the analytical expressions. Detailed studies have been performed concerning our measurement using this formalism. From the data collected with the L3 detector between 1991 and 1994, which corresponds to an integrated luminosity of 118.8 pb``1 at a center of mass energy of the order of the Z mass, we have identified and selected the following tau decay channel samples: tau yields e nu tilde char nu, tau yields mu nu tilde char nu, tau yields pi/K nu y tau yields p/K*nu. From the analysis of these samples we get the tau polarization asymmetry measurement: A{sub p}=0.143+-0.014+-0.010, which corresponds to a value of sin``2 tilde char theta{sub w}=0.2320+-0.0018+-0.0013. (Author) 24 refs

  20. Silicon Qubits

    Energy Technology Data Exchange (ETDEWEB)

    Ladd, Thaddeus D. [HRL Laboratories, LLC, Malibu, CA (United States); Carroll, Malcolm S. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

    2018-02-28

    Silicon is a promising material candidate for qubits due to the combination of worldwide infrastructure in silicon microelectronics fabrication and the capability to drastically reduce decohering noise channels via chemical purification and isotopic enhancement. However, a variety of challenges in fabrication, control, and measurement leaves unclear the best strategy for fully realizing this material’s future potential. In this article, we survey three basic qubit types: those based on substitutional donors, on metal-oxide-semiconductor (MOS) structures, and on Si/SiGe heterostructures. We also discuss the multiple schema used to define and control Si qubits, which may exploit the manipulation and detection of a single electron charge, the state of a single electron spin, or the collective states of multiple spins. Far from being comprehensive, this article provides a brief orientation to the rapidly evolving field of silicon qubit technology and is intended as an approachable entry point for a researcher new to this field.

  1. Many-body calculation of the coincidence L3 photoelectron spectroscopy main line of Ni metal

    International Nuclear Information System (INIS)

    Ohno, Masahide

    2008-01-01

    The partial singles L 3 photoelectron spectroscopy (PES) main line of Ni metal correlated with Auger electrons emitted by the localized L 3 -VV Auger decay is calculated by a many-body theory. The partial singles L 3 PES main line of Ni metal almost coincides in both line shape and peak kinetic energy (KE) with the singles one. The former main line peak shows a KE shift of only 0.01 eV toward the lower KE and a very small asymmetric line shape change compared to the singles one. The asymmetric line shape change and the peak KE shift of the partial singles L 3 main line are very small. However, they are due to the variation with photoelectron KE in the branching ratio of the partial Auger decay width in the partial singles L 3 PES main line by the photoelectron KE dependent imaginary part of the shakeup self-energy. The L 3 PES main line of Ni metal measured in coincidence with the L 3 -VV ( 1 G) Auger electron spectroscopy (AES) main line peak is the partial singles one modulated by a spectral function R a of a fixed energy Auger electron analyzer so that it should show only a symmetric line narrowing by R a compared to the singles one. The L 3 PES main line peak of Ni metal measured in coincidence with the delocalized band-like L 3 -VV AES peak or not completely split-off (or not completely localized) L 3 -VV ( 3 F) AES peak, will show an asymmetric line narrowing and a KE shift compared to the singles one. Thus, the L 3 PES main line of Ni metal in coincidence with various parts of the L 3 -VV AES spectrum depends on which part of the L 3 -VV AES spectrum a fixed energy Auger electron analyzer is set. The experimental verification is in need

  2. Hepatic CREB3L3 controls whole-body energy homeostasis and improves obesity and diabetes.

    Science.gov (United States)

    Nakagawa, Yoshimi; Satoh, Aoi; Yabe, Sachiko; Furusawa, Mika; Tokushige, Naoko; Tezuka, Hitomi; Mikami, Motoki; Iwata, Wakiko; Shingyouchi, Akiko; Matsuzaka, Takashi; Kiwata, Shiori; Fujimoto, Yuri; Shimizu, Hidehisa; Danno, Hirosuke; Yamamoto, Takashi; Ishii, Kiyoaki; Karasawa, Tadayoshi; Takeuchi, Yoshinori; Iwasaki, Hitoshi; Shimada, Masako; Kawakami, Yasushi; Urayama, Osamu; Sone, Hirohito; Takekoshi, Kazuhiro; Kobayashi, Kazuto; Yatoh, Shigeru; Takahashi, Akimitsu; Yahagi, Naoya; Suzuki, Hiroaki; Yamada, Nobuhiro; Shimano, Hitoshi

    2014-12-01

    Transcriptional regulation of metabolic genes in the liver is the key to maintaining systemic energy homeostasis during starvation. The membrane-bound transcription factor cAMP-responsive element-binding protein 3-like 3 (CREB3L3) has been reported to be activated during fasting and to regulate triglyceride metabolism. Here, we show that CREB3L3 confers a wide spectrum of metabolic responses to starvation in vivo. Adenoviral and transgenic overexpression of nuclear CREB3L3 induced systemic lipolysis, hepatic ketogenesis, and insulin sensitivity with increased energy expenditure, leading to marked reduction in body weight, plasma lipid levels, and glucose levels. CREB3L3 overexpression activated gene expression levels and plasma levels of antidiabetic hormones, including fibroblast growth factor 21 and IGF-binding protein 2. Amelioration of diabetes by hepatic activation of CREB3L3 was also observed in several types of diabetic obese mice. Nuclear CREB3L3 mutually activates the peroxisome proliferator-activated receptor (PPAR) α promoter in an autoloop fashion and is crucial for the ligand transactivation of PPARα by interacting with its transcriptional regulator, peroxisome proliferator-activated receptor gamma coactivator-1α. CREB3L3 directly and indirectly controls fibroblast growth factor 21 expression and its plasma level, which contributes at least partially to the catabolic effects of CREB3L3 on systemic energy homeostasis in the entire body. Therefore, CREB3L3 is a therapeutic target for obesity and diabetes.

  3. Clock generation and distribution for the 130-nm Itanium$^{R}$ 2 processor with 6-MB on-die L3 cache

    CERN Document Server

    Tam, S; Limaye, R D

    2004-01-01

    The clock generation and distribution system for the 130-nm Itanium 2 processor operates at 1.5 GHz with a skew of 24 ps. The Itanium 2 processor features 6 MB of on-die L3 cache and has a die size of 374 mm/sup 2/. Fuse-based clock de-skew enables post-silicon clock optimization to gain higher frequency. This paper describes the clock generation, global clock distribution, local clocking, and the clock skew optimization feature.

  4. The Bilingual Advantage in L3 Learning: A Developmental Study of Rhotic Sounds

    Science.gov (United States)

    Kopecková, Romana

    2016-01-01

    Facilitative effects of bilingualism on general aspects of third language (L3) proficiency have been demonstrated in numerous studies conducted in bilingual communities and classrooms around the world. When it comes to L3 phonology, however, empirical evidence has been scarce and inconclusive in respect to the question of whether and/or how…

  5. Xenon spectator and diagram L3-M4,5M4,5 Auger intensities near the L3 threshold

    International Nuclear Information System (INIS)

    Armen, G.B.; Levin, J.C.; Southworth, S.H.; LeBrun, T.; Arp, U.; MacDonald, M.A.

    1997-01-01

    Calculations based on the theory of radiationless resonant Raman scattering are employed in the interpretation of new XeL 3 -M 4,5 M 4,5 Auger spectra recorded using synchrotron radiation tuned to energies across the L 3 edge. Fits of theoretical line shapes to the spectra are employed in separating intensities due to nd spectator (resonant) and diagram Auger processes. Near-threshold Auger intensity, previously attributed to diagram decay, is found to be due to the large-n spectator lines that result from postcollision-interaction endash induced open-quotes recaptureclose quotes of threshold photoelectrons to nd orbitals. copyright 1997 The American Physical Society

  6. L(3)mbt and the LINT complex safeguard cellular identity in the Drosophila ovary.

    Science.gov (United States)

    Coux, Rémi-Xavier; Teixeira, Felipe Karam; Lehmann, Ruth

    2018-04-04

    Maintenance of cellular identity is essential for tissue development and homeostasis. At the molecular level, cell identity is determined by the coordinated activation and repression of defined sets of genes. The tumor suppressor L(3)mbt has been shown to secure cellular identity in Drosophila larval brains by repressing germline-specific genes. Here, we interrogate the temporal and spatial requirements for L(3)mbt in the Drosophila ovary, and show that it safeguards the integrity of both somatic and germline tissues. l(3)mbt mutant ovaries exhibit multiple developmental defects, which we find to be largely caused by the inappropriate expression of a single gene, nanos , a key regulator of germline fate, in the somatic ovarian cells. In the female germline, we find that L(3)mbt represses testis-specific and neuronal genes. At the molecular level, we show that L(3)mbt function in the ovary is mediated through its co-factor Lint-1 but independently of the dREAM complex. Together, our work uncovers a more complex role for L(3)mbt than previously understood and demonstrates that L(3)mbt secures tissue identity by preventing the simultaneous expression of original identity markers and tissue-specific misexpression signatures. © 2018. Published by The Company of Biologists Ltd.

  7. Geochemistry of silicon isotopes

    Energy Technology Data Exchange (ETDEWEB)

    Ding, Tiping; Li, Yanhe; Gao, Jianfei; Hu, Bin [Chinese Academy of Geological Science, Beijing (China). Inst. of Mineral Resources; Jiang, Shaoyong [China Univ. of Geosciences, Wuhan (China).

    2018-04-01

    Silicon is one of the most abundant elements in the Earth and silicon isotope geochemistry is important in identifying the silicon source for various geological bodies and in studying the behavior of silicon in different geological processes. This book starts with an introduction on the development of silicon isotope geochemistry. Various analytical methods are described and compared with each other in detail. The mechanisms of silicon isotope fractionation are discussed, and silicon isotope distributions in various extraterrestrial and terrestrial reservoirs are updated. Besides, the applications of silicon isotopes in several important fields are presented.

  8. Mutations in the Bacterial Ribosomal Protein L3 and Their Association with Antibiotic Resistance

    Science.gov (United States)

    Klitgaard, Rasmus N.; Ntokou, Eleni; Nørgaard, Katrine; Biltoft, Daniel; Hansen, Lykke H.; Trædholm, Nicolai M.; Kongsted, Jacob

    2015-01-01

    Different groups of antibiotics bind to the peptidyl transferase center (PTC) in the large subunit of the bacterial ribosome. Resistance to these groups of antibiotics has often been linked with mutations or methylations of the 23S rRNA. In recent years, there has been a rise in the number of studies where mutations have been found in the ribosomal protein L3 in bacterial strains resistant to PTC-targeting antibiotics but there is often no evidence that these mutations actually confer antibiotic resistance. In this study, a plasmid exchange system was used to replace plasmid-carried wild-type genes with mutated L3 genes in a chromosomal L3 deletion strain. In this way, the essential L3 gene is available for the bacteria while allowing replacement of the wild type with mutated L3 genes. This enables investigation of the effect of single mutations in Escherichia coli without a wild-type L3 background. Ten plasmid-carried mutated L3 genes were constructed, and their effect on growth and antibiotic susceptibility was investigated. Additionally, computational modeling of the impact of L3 mutations in E. coli was used to assess changes in 50S structure and antibiotic binding. All mutations are placed in the loops of L3 near the PTC. Growth data show that 9 of the 10 mutations were well accepted in E. coli, although some of them came with a fitness cost. Only one of the mutants exhibited reduced susceptibility to linezolid, while five exhibited reduced susceptibility to tiamulin. PMID:25845869

  9. The behaviour of the L3 muon chambers in a magnetic field

    International Nuclear Information System (INIS)

    Onvlee, J.

    1989-01-01

    L3 is one of the four detectors at LEP. It consists of many parts, each of which measures a specific property of the particles produced in the electron positron collisions. One of the specialities of the L3 detector is the high precision measurement of the momenta of the muons produced in the collisions. In order to curve the muon trajectories the detector is placed in a magnetic field of about 0.5 Tesla. The behaviour of the L3 muon drift chambers in this magnetic field is the main subject of this thesis. (author). 45 refs.; 47 figs.; 12 tabs

  10. Results of L3 BGO calorimeter calibration using an RFQ accelerator

    CERN Document Server

    Chaturvedi, U K; Gataullin, M; Gratta, Giorgio; Kirkby, D; Lu, W; Newman, H; Shvorob, A V; Tully, C; Zhu, R

    2000-01-01

    A novel calibration system based on a radiofrequency-quadrupole (RFQ) accelerator has been installed in the L3 experiment. Radiative capture of 1.85 MeV protons from the RFQ accelerator in a lithium target produces a flux of 17.6 MeV photons which are used to calibrate 11000 crystals of the L3 BGO calorimeter. In this paper we present results of the RFQ run taken in November 1997. A calibration precision of 0.6% was reached in the barrel of the L3 BGO calorimeter, and 0.7% in the BGO endcaps. (8 refs).

  11. EX1004L3 Water Column Summary Report and Profile Data Collection

    Data.gov (United States)

    National Oceanic and Atmospheric Administration, Department of Commerce — A complete set of water column profile data and CTD Summary Report (if generated) generated by the Okeanos Explorer during EX1004L3: Exploration Indonesia - Bitung...

  12. EX0909L3 Water Column Summary Report and Profile Data Collection

    Data.gov (United States)

    National Oceanic and Atmospheric Administration, Department of Commerce — A complete set of water column profile data and CTD Summary Report (if generated) generated by the Okeanos Explorer during EX0909L3: Mapping Field Trials - Hawaiian...

  13. EX1502L3 Water Column Summary Report and Profile Data Collection

    Data.gov (United States)

    National Oceanic and Atmospheric Administration, Department of Commerce — A complete set of water column profile data and CTD Summary Report (if generated) generated by the Okeanos Explorer during EX1502L3: Caribbean Exploration (ROV)...

  14. EX1605L3 Dive02 Ancillary Data Collection including reports, kmls, spreadsheets, and data

    Data.gov (United States)

    National Oceanic and Atmospheric Administration, Department of Commerce — Standard suite of ancillary data files generated through a scripting process following an ROV dive on NOAA Ship Okeanos Explorer during EX1605L3: CAPSTONE CNMI &...

  15. EX1504L3 Dive07 Ancillary Data Collection including reports, kmls, spreadsheets, images and data

    Data.gov (United States)

    National Oceanic and Atmospheric Administration, Department of Commerce — Standard suite of ancillary data files generated through a scripting process following an ROV dive on NOAA Ship Okeanos Explorer during EX1504L3: CAPSTONE Leg III:...

  16. EX1605L3 Dive07 Ancillary Data Collection including reports, kmls, spreadsheets, and data

    Data.gov (United States)

    National Oceanic and Atmospheric Administration, Department of Commerce — Standard suite of ancillary data files generated through a scripting process following an ROV dive on NOAA Ship Okeanos Explorer during EX1605L3: CAPSTONE CNMI &...

  17. EX1605L3 Dive05 Ancillary Data Collection including reports, kmls, spreadsheets, and data

    Data.gov (United States)

    National Oceanic and Atmospheric Administration, Department of Commerce — Standard suite of ancillary data files generated through a scripting process following an ROV dive on NOAA Ship Okeanos Explorer during EX1605L3: CAPSTONE CNMI &...

  18. EX1504L3 Dive06 Ancillary Data Collection including reports, kmls, spreadsheets, images and data

    Data.gov (United States)

    National Oceanic and Atmospheric Administration, Department of Commerce — Standard suite of ancillary data files generated through a scripting process following an ROV dive on NOAA Ship Okeanos Explorer during EX1504L3: CAPSTONE Leg III:...

  19. EX1605L3 Dive19 Ancillary Data Collection including reports, kmls, spreadsheets, and data

    Data.gov (United States)

    National Oceanic and Atmospheric Administration, Department of Commerce — Standard suite of ancillary data files generated through a scripting process following an ROV dive on NOAA Ship Okeanos Explorer during EX1605L3: CAPSTONE CNMI &...

  20. EX1504L3 Dive02 Ancillary Data Collection including reports, kmls, spreadsheets, images and data

    Data.gov (United States)

    National Oceanic and Atmospheric Administration, Department of Commerce — Standard suite of ancillary data files generated through a scripting process following an ROV dive on NOAA Ship Okeanos Explorer during EX1504L3: CAPSTONE Leg III:...

  1. TES/Aura L3 H2O Monthly Gridded V004

    Data.gov (United States)

    National Aeronautics and Space Administration — The TES Aura L3 H2O data consist of daily atmospheric temperature and VMR for the atmospheric species. Data are provided at 2 degree latitude X 4 degree longitude...

  2. The L3+C detector, a unique tool-set to study cosmic rays

    International Nuclear Information System (INIS)

    Adriani, O.; Akker, M. van den; Banerjee, S.; Baehr, J.; Betev, B.; Bourilkov, D.; Bottai, S.; Bobbink, G.; Cartacci, A.; Chemarin, M.; Chen, G.; Chen, H.S.; Chiarusi, T.; Dai, C.J.; Ding, L.K.; Duran, I.; Faber, G.; Fay, J.; Grabosch, H.J.; Groenstege, H.; Guo, Y.N.; Gupta, S.; Haller, Ch.; Hayashi, Y.; He, Z.X.; Hebbeker, T.; Hofer, H.; Hoferjun, H.; Huo, A.X.; Ito, N.; Jing, C.L.; Jones, L.; Kantserov, V.; Kawakami, S.; Kittel, W.; Koenig, A.C.; Kok, E.; Korn, A.; Kuang, H.H.; Kuijpers, J.; Ladron de Guevara, P.; Le Coultre, P.; Lei, Y.; Leich, H.; Leiste, R.; Li, D.; Li, L.; Li, Z.C.; Liu, Z.A.; Liu, H.T.; Lohmann, W.; Lu, Y.S.; Ma, X.H.; Ma, Y.Q.; Mil, A. van; Monteleoni, B.; Nahnhauer, R.; Pauss, F.; Parriaud, J.-F.; Petersen, B.; Pohl, M.; Qing, C.R.; Ramelli, R.; Ravindran, K.C.; Rewiersma, P.; Rojkov, A.; Saidi, R.; Schmitt, V.; Schoeneich, B.; Schotanus, D.J.; Shen, C.Q.; Sulanke, H.; Tang, X.W.; Timmermans, C.; Tonwar, S.; Trowitzsch, G.; Unger, M.; Verkooijen, H.; Wang, X.L.; Wang, X.W.; Wang, Z.M.; Wijk, R. van; Wijnen, Th.A.M.; Wilkens, H.; Xu, Y.P.; Xu, Z.Z.; Yang, C.G.; Yang, X.F.; Yao, Z.G.; Yu, Z.Q.; Zhang, S.; Zhu, G.Y.; Zhu, Q.Q.; Zhuang, H.L.; Zwart, A.N.M.

    2002-01-01

    The L3 detector at the CERN electron-positron collider, LEP, has been employed for the study of cosmic ray muons. The muon spectrometer of L3 consists of a set of high-precision drift chambers installed inside a magnet with a volume of about 1000 m 3 and a field of 0.5 T. Muon momenta are measured with a resolution of a few percent at 50 GeV. The detector is located under 30 m of overburden. A scintillator air shower array of 54 m by 30 m is installed on the roof of the surface hall above L3 in order to estimate the energy and the core position of the shower associated with a sample of detected muons. Thanks to the unique properties of the L3+C detector, muon research topics relevant to various current problems in cosmic ray and particle astrophysics can be studied

  3. The L3+C detector, a unique tool-set to study cosmic rays

    CERN Document Server

    Adriani, O; Banerjee, S; Bähr, J; Betev, B L; Bourilkov, D; Bottai, S; Bobbink, Gerjan J; Cartacci, A M; Chemarin, M; Chen, G; Chen He Sheng; Chiarusi, T; Dai Chang Jiang; Ding, L K

    2002-01-01

    The L3 detector at the CERN electron-positron collider, LEP, has been employed for the study of cosmic ray muons. The muon spectrometer of L3 consists of a set of high-precision drift chambers installed inside a magnet with a volume of about 1000 m**3 and a field of 0.5 T. Muon momenta are measured with a resolution of a few percent at 50 GeV. The detector is located under 30 m of overburden. A scintillator air shower array of 54 m by 30 m is installed on the roof of the surface hall above L3 in order to estimate the energy and the core position of the shower associated with a sample of detected muons. Thanks to the unique properties of the L3+C detector, muon research topics relevant to various current problems in cosmic ray and particle astrophysics can be studied.

  4. EX1402L3 Water Column Summary Report and Profile Data Collection

    Data.gov (United States)

    National Oceanic and Atmospheric Administration, Department of Commerce — A complete set of water column profile data and CTD Summary Report (if generated) generated by the Okeanos Explorer during EX1402L3: Gulf of Mexico Mapping and ROV...

  5. EX1504L3 Dive04 Ancillary Data Collection including reports, kmls, spreadsheets, images and data

    Data.gov (United States)

    National Oceanic and Atmospheric Administration, Department of Commerce — Standard suite of ancillary data files generated through a scripting process following an ROV dive on NOAA Ship Okeanos Explorer during EX1504L3: CAPSTONE Leg III:...

  6. EX1605L3 Dive12 Ancillary Data Collection including reports, kmls, spreadsheets, and data

    Data.gov (United States)

    National Oceanic and Atmospheric Administration, Department of Commerce — Standard suite of ancillary data files generated through a scripting process following an ROV dive on NOAA Ship Okeanos Explorer during EX1605L3: CAPSTONE CNMI &...

  7. A lead-scintillating fiber calorimeter to increase L3 hermeticity

    CERN Document Server

    Basti, G

    1997-01-01

    A lead-scintillating fiber calorimeter has been built to fill the gap between endcap and barrel of the L3 BGO electromagnetic calorimeter. We report details of the construction, as well as results from test-beam and simulation.

  8. EX1202L3 Water Column Summary Report and Profile Data Collection

    Data.gov (United States)

    National Oceanic and Atmospheric Administration, Department of Commerce — A complete set of water column profile data and CTD Summary Report (if generated) generated by the Okeanos Explorer during EX1202L3: Gulf of Mexico Exploration...

  9. EX1605L3 Dive01 Ancillary Data Collection including reports, kmls, spreadsheets, and data

    Data.gov (United States)

    National Oceanic and Atmospheric Administration, Department of Commerce — Standard suite of ancillary data files generated through a scripting process following an ROV dive on NOAA Ship Okeanos Explorer during EX1605L3: CAPSTONE CNMI &...

  10. EX1605L3 Dive13 Ancillary Data Collection including reports, kmls, spreadsheets, and data

    Data.gov (United States)

    National Oceanic and Atmospheric Administration, Department of Commerce — Standard suite of ancillary data files generated through a scripting process following an ROV dive on NOAA Ship Okeanos Explorer during EX1605L3: CAPSTONE CNMI &...

  11. EX1605L3 Dive20 Ancillary Data Collection including reports, kmls, spreadsheets, and data

    Data.gov (United States)

    National Oceanic and Atmospheric Administration, Department of Commerce — Standard suite of ancillary data files generated through a scripting process following an ROV dive on NOAA Ship Okeanos Explorer during EX1605L3: CAPSTONE CNMI &...

  12. EX1504L3 Water Column Summary Report and Profile Data Collection

    Data.gov (United States)

    National Oceanic and Atmospheric Administration, Department of Commerce — A complete set of water column profile data and CTD Summary Report (if generated) generated by the Okeanos Explorer during EX1504L3: CAPSTONE Leg III: Main Hawaiian...

  13. EX1504L3 Dive03 Ancillary Data Collection including reports, kmls, spreadsheets, images and data

    Data.gov (United States)

    National Oceanic and Atmospheric Administration, Department of Commerce — Standard suite of ancillary data files generated through a scripting process following an ROV dive on NOAA Ship Okeanos Explorer during EX1504L3: CAPSTONE Leg III:...

  14. Search on charginos and neutralinos with the L3 detector at LEP; Recherche de charginos et de neutralinos avec le detecteur L3 au LEP

    Energy Technology Data Exchange (ETDEWEB)

    Chereau, Xavier [Laboratoire d`Annecy-le-vieux de physique des particules, Grenoble-1 Univ., 74 Annecy (France)

    1998-04-30

    This work presents an experimental search for supersymmetric particles, the charginos and the neutralinos, at center of mass energies {radical} 161, 172 and 183 GeV, with the L3 detector at the e{sup +}e{sup -} collider LEP. Assuming R-parity conservation, SUSY events have a large missing energy, carried by the lightest supersymmetric particle (LSP), which allow us to distinguish them from standard events. Then, for all the studied final states and all the energies, we optimized the selections in order to have the best signal-to-noise ratio. No excess of events were observed with respect to the standard model predictions. We set upper limits on the chargino and neutralino production cross sections. In the frame of the constraint MSSM, these results were combined with the results from the L3 slepton analyses to set lower limits on the chargino and neutralino masses: particularly, we exclude a neutralino {chi}{sub 1}{sup 0} bar lighter than 25.9 GeV/c{sup 2} (95% C.L.). This result plays an important role for the interpretation of the dark matter in universe. The search for events with missing energy needs a detector with a good hermeticity. At the end of 1995, a new electromagnetic calorimeter was installed in the L3 experiment. Here we present the improvements of performances and the calibration of this detector composed of 48 bricks made with lead and scintillating fibers (SPACAL) 71 refs., 104 figs., 21 tabs.

  15. Design and implementation of an integrated architecture for massive parallel data treatment of analogue signals supplied by silicon detectors of very high spatial resolution

    International Nuclear Information System (INIS)

    Michel, J.

    1993-02-01

    This doctorate thesis studies an integrated architecture designed to a parallel massive treatment of analogue signals supplied by silicon detectors of very high spatial resolution. The first chapter is an introduction presenting the general outline and the triggering conditions of the spectrometer. Chapter two describes the operational structure of a microvertex detector made of Si micro-plates associated to the measuring chains. Information preconditioning is related to the pre-amplification stage, to the pile-up effects and to the reduction in the time characteristic due to the high counting rates. The chapter three describes the architecture of the analogue delay buffer, makes an analysis of the intrinsic noise and presents the operational testings and input/output control operations. The fourth chapter is devoted to the description of the analogue pulse shape processor and gives also the testings and the corresponding measurements on the circuit. Finally, the chapter five deals with the simplest modeling of the entire conditioning chain. Also, the testings and measuring procedures are here discussed. In conclusion the author presents some prospects for improving the signal-to-noise ratio by summation of the de-convoluted micro-paths. 78 refs., 78 figs., 1 annexe

  16. Buried oxide layer in silicon

    Science.gov (United States)

    Sadana, Devendra Kumar; Holland, Orin Wayne

    2001-01-01

    A process for forming Silicon-On-Insulator is described incorporating the steps of ion implantation of oxygen into a silicon substrate at elevated temperature, ion implanting oxygen at a temperature below 200.degree. C. at a lower dose to form an amorphous silicon layer, and annealing steps to form a mixture of defective single crystal silicon and polycrystalline silicon or polycrystalline silicon alone and then silicon oxide from the amorphous silicon layer to form a continuous silicon oxide layer below the surface of the silicon substrate to provide an isolated superficial layer of silicon. The invention overcomes the problem of buried isolated islands of silicon oxide forming a discontinuous buried oxide layer.

  17. Measurement of the masses of the electroweak gauge bosons at L3; Bestimmung der Massen der elektroschwachen Eichbosonen bei L3

    Energy Technology Data Exchange (ETDEWEB)

    Rosenbleck, C.

    2006-10-09

    This thesis presents the measurement of the masses of the carriers of the weak force in the Standard Model of Particle Physics, the gauge bosons W and Z. The masses are determined using the kinematics of the bosons' decay products. The data were collected by the L3 experiment at the Large Electron Positron Collider (LEP) at centre-of-mass energies, {radical}(s), between 183 GeV and 209 GeV in the years 1997 to 2000. The Z-boson mass is determined to be m{sub Z}=91.272{+-}0.046 GeV. The second part of this analysis describes the measurement of the mass of the W-boson. The W-boson mass is determined to be m{sub W}=80.242{+-}0.057 GeV in this analysis. If combined with the L3 results at lower centre-of-mass energies, the final W boson mass value is m{sub W}=80.270{+-}0.055 GeV. The {rho} parameter is defined as {rho}=m{sup 2}{sub W}/(m{sup 2}{sub Z} . cos{sup 2} {theta}{sub W}). Using the value of m{sub Z} obtained in the Z resonance scan, the final value for m{sub W} and the value of {theta}{sub W}, {rho} is obtained to be {rho}=0.9937{+-}0.0024, yielding a 2.6{sigma} deviation from 1. Combining the L3 value for m{sub W} with the results of the LEP experiments ALEPH, DELPHI, and OPAL and the TEVATRON experiments CDF and DOe yields a W boson mass of m{sub W}=80.392{+-}0.029 GeV. Together with other measurements this determines the best value of the Higgs-boson mass to be m{sub H}=85{sub -28}{sup +39} GeV. (orig.)

  18. Measurement of the Lifetime of the $\\tau$ Lepton

    CERN Document Server

    Acciarri, M; Aguilar-Benítez, M; Ahlen, S P; Alpat, B; Alcaraz, J; Alemanni, G; Allaby, James V; Aloisio, A; Alverson, G; Alviggi, M G; Ambrosi, G; Anderhub, H; Andreev, V P; Angelescu, T; Anselmo, F; Antreasyan, D; Arefev, A; Azemoon, T; Aziz, T; Bagnaia, P; Baksay, L; Ball, R C; Banerjee, S; Banicz, K; Barillère, R; Barone, L; Bartalini, P; Baschirotto, A; Basile, M; Battiston, R; Bay, A; Becattini, F; Becker, U; Behner, F; Berdugo, J; Berges, P; Bertucci, B; Betev, B L; Bhattacharya, S; Biasini, M; Biland, A; Bilei, G M; Blaising, J J; Blyth, S C; Bobbink, Gerjan J; Böck, R K; Böhm, A; Borgia, B; Boucham, A; Bourilkov, D; Bourquin, Maurice; Boutigny, D; Branson, J G; Brigljevic, V; Brock, I C; Buffini, A; Buijs, A; Burger, J D; Burger, W J; Busenitz, J K; Buytenhuijs, A O; Cai, X D; Campanelli, M; Capell, M; Cara Romeo, G; Caria, M; Carlino, G; Cartacci, A M; Casaus, J; Castellini, G; Cavallari, F; Cavallo, N; Cecchi, C; Cerrada-Canales, M; Cesaroni, F; Chamizo-Llatas, M; Chan, A; Chang, Y H; Chaturvedi, U K; Chemarin, M; Chen, A; Chen, G; Chen, G M; Chen, H F; Chen, H S; Chen, M; Chiefari, G; Chien, C Y; Choi, M T; Cifarelli, Luisa; Cindolo, F; Civinini, C; Clare, I; Clare, R; Cohn, H O; Coignet, G; Colijn, A P; Colino, N; Costantini, S; Cotorobai, F; de la Cruz, B; Csilling, Akos; Dai, T S; D'Alessandro, R; De Asmundis, R; De Boeck, H; Degré, A; Deiters, K; Denes, P; De Notaristefani, F; DiBitonto, Daryl; Diemoz, M; Van Dierendonck, D N; Di Lodovico, F; Dionisi, C; Dittmar, Michael; Dominguez, A; Doria, A; Dorne, I; Dova, M T; Drago, E; Duchesneau, D; Duinker, P; Durán, I; Dutta, S; Easo, S; Efremenko, Yu V; El-Mamouni, H; Engler, A; Eppling, F J; Erné, F C; Ernenwein, J P; Extermann, Pierre; Fabre, M; Faccini, R; Falciano, S; Favara, A; Fay, J; Fedin, O; Felcini, Marta; Fenyi, B; Ferguson, T; Fernández, D; Ferroni, F; Fesefeldt, H S; Fiandrini, E; Field, J H; Filthaut, Frank; Fisher, P H; Forconi, G; Fredj, L; Freudenreich, Klaus; Furetta, C; Galaktionov, Yu; Ganguli, S N; García-Abia, P; Gau, S S; Gentile, S; Gerald, J; Gheordanescu, N; Giagu, S; Goldfarb, S; Goldstein, J; Gong, Z F; Gougas, Andreas; Gratta, Giorgio; Grünewald, M W; Gupta, V K; Gurtu, A; Gutay, L J; Hangarter, K; Hartmann, B; Hasan, A; Hatzifotiadou, D; Hebbeker, T; Hervé, A; Van Hoek, W C; Hofer, H; Hoorani, H; Hou, S R; Hu, G; Innocente, Vincenzo; Janssen, H; Jin, B N; Jones, L W; de Jong, P; Josa-Mutuberria, I; Kasser, A; Khan, R A; Kamyshkov, Yu A; Kapinos, P; Kapustinsky, J S; Karyotakis, Yu; Kaur, M; Kienzle-Focacci, M N; Kim, D; Kim, J K; Kim, S C; Kim, Y G; Kinnison, W W; Kirkby, A; Kirkby, D; Kirkby, Jasper; Kiss, D; Kittel, E W; Klimentov, A; König, A C; Korolko, I; Koutsenko, V F; Krämer, R W; Krenz, W; Kuijten, H; Kunin, A; Ladrón de Guevara, P; Landi, G; Lapoint, C; Lassila-Perini, K M; Laurikainen, P; Lebeau, M; Lebedev, A; Lebrun, P; Lecomte, P; Lecoq, P; Le Coultre, P; Lee Jae Sik; Lee, K Y; Leggett, C; Le Goff, J M; Leiste, R; Leonardi, E; Levchenko, P M; Li Chuan; Lieb, E H; Lin, W T; Linde, Frank L; Lista, L; Liu, Z A; Lohmann, W; Longo, E; Lu, W; Lü, Y S; Lübelsmeyer, K; Luci, C; Luckey, D; Luminari, L; Lustermann, W; Ma Wen Gan; Maity, M; Majumder, G; Malgeri, L; Malinin, A; Maña, C; Mangla, S; Marchesini, P A; Marin, A; Martin, J P; Marzano, F; Massaro, G G G; McNally, D; Mele, S; Merola, L; Meschini, M; Metzger, W J; Von der Mey, M; Mi, Y; Mihul, A; Van Mil, A J W; Mirabelli, G; Mnich, J; Molnár, P; Monteleoni, B; Moore, R; Morganti, S; Moulik, T; Mount, R; Müller, S; Muheim, F; Nagy, E; Nahn, S; Napolitano, M; Nessi-Tedaldi, F; Newman, H; Nippe, A; Nowak, H; Organtini, G; Ostonen, R; Pandoulas, D; Paoletti, S; Paolucci, P; Park, H K; Pascale, G; Passaleva, G; Patricelli, S; Paul, T; Pauluzzi, M; Paus, C; Pauss, Felicitas; Peach, D; Pei, Y J; Pensotti, S; Perret-Gallix, D; Petrak, S; Pevsner, A; Piccolo, D; Pieri, M; Pinto, J C; Piroué, P A; Pistolesi, E; Plyaskin, V; Pohl, M; Pozhidaev, V; Postema, H; Produit, N; Prokofev, D; Prokofiev, D O; Rahal-Callot, G; Rancoita, P G; Rattaggi, M; Raven, G; Razis, P A; Read, K; Ren, D; Rescigno, M; Reucroft, S; Van Rhee, T; Riemann, S; Riemers, B C; Riles, K; Rind, O; Ro, S; Robohm, A; Rodin, J; Rodríguez-Calonge, F J; Roe, B P; Röhner, S; Romero, L; Rosier-Lees, S; Rosselet, P; Van Rossum, W; Roth, S; Rubio, Juan Antonio; Rykaczewski, H; Salicio, J; Sánchez, E; Santocchia, A; Sarakinos, M E; Sarkar, S; Sassowsky, M; Sauvage, G; Schäfer, C; Shchegelskii, V; Schmidt-Kärst, S; Schmitz, D; Schmitz, P; Schneegans, M; Schöneich, B; Scholz, N; Schopper, Herwig Franz; Schotanus, D J; Schwenke, J; Schwering, G; Sciacca, C; Sciarrino, D; Sens, Johannes C; Servoli, L; Shevchenko, S; Shivarov, N; Shoutko, V; Shukla, J; Shumilov, E; Shvorob, A V; Siedenburg, T; Son, D; Sopczak, André; Soulimov, V; Smith, B; Spillantini, P; Steuer, M; Stickland, D P; Stone, H; Stoyanov, B; Strässner, A; Strauch, K; Sudhakar, K; Sultanov, G G; Sun, L Z; Susinno, G F; Suter, H; Swain, J D; Tang, X W; Tauscher, Ludwig; Taylor, L; Ting, Samuel C C; Ting, S M; Tonisch, F; Tonutti, M; Tonwar, S C; Tóth, J; Tully, C; Tuchscherer, H; Tung, K L; Ulbricht, J; Uwer, U; Valente, E; Van de Walle, R T; Vesztergombi, G; Vetlitskii, I; Viertel, Gert M; Vivargent, M; Völkert, R; Vogel, H; Vogt, H; Vorobev, I; Vorobyov, A A; Vorvolakos, A; Wadhwa, M; Wallraff, W; Wang, J C; Wang, X L; Wang, Z M; Weber, A; Wittgenstein, F; Wu, S X; Wynhoff, S; Xu, J; Xu, Z Z; Yang, B Z; Yang, C G; Yao, X Y; Ye, J B; Yeh, S C; You, J M; Zalite, A; Zalite, Yu; Zemp, P; Zeng, Y; Zhang, Z; Zhang, Z P; Zhou, B; Zhou, Y; Zhu, G Y; Zhu, R Y; Zichichi, Antonino

    1996-01-01

    The lifetime of the tau lepton is measured using data collected in 1994 by the L3 detector at LEP. The precise track position information of the Silicon Microvertex Detector is exploited. The tau lepton lifetime is determined from the signed impact parameter distribution for 30 322 tau decays into one charged particle and from the decay length distribution for 3891 tau decays into three charged particles. Combining the two methods we obtain $\\tau_{\\tau}$ = 290.1 $\\pm$ 4.0 fs.

  19. The second level trigger of the L3 experiment. Pt. 1

    International Nuclear Information System (INIS)

    Bertsch, Y.; Blaising, J.J.; Bonnefon, H.; Chollet-Le Flour, F.; Degre, A.; Dromby, G.; Lecoq, J.; Morand, R.; Moynot, M.; Perrot, G.; Riccadonna, X.

    1993-07-01

    The second level trigger of the L3 experiment performs online background rejection and reduces the first level trigger rate to a value fitting with the third level trigger processing capability. Designed around a set of 3 bit-slice XOP microprocessors, it can process up to 500 first level triggers per second without significant dead time in the data acquisition. The system described here ensures the L3 data taking since the beginning of LEP in July 1989 and the online rejection since 1990. (authors). 24 refs., 8 figs., 3 tabs

  20. Safety analysis report for packaging (onsite) L3-181 N basin cask

    International Nuclear Information System (INIS)

    Adkins, H.E. Jr.

    1996-01-01

    Purpose of this Safety Analysis Report (SARP) is to authorize the onsite transfer of a Type B, Fissile Excepted, non-highway route controlled quantity in the L3-181 packaging from the N Basin to a storage/disposal facility within 200 West Area. This SARP provides the evaluation necessary to demonstrate that the L3-181 meets the requirements of the 'Hazardous Material Packaging and Shipping', WHC- CM-2-14, by meeting the applicable performance requirements for normal conditions of transport

  1. The automatic test system for the L3 muon drift chamber amplifiers

    International Nuclear Information System (INIS)

    Bove, A.; Caiazzo, L.; Lanzano, S.; Manna, F.; Manto, G.; Parascandolo, L.; Parascandolo, P.; Parmentola, A.; Paternoster, G.

    1987-01-01

    We describe the system we developed to test the linearity of wire chambers amplifiers of the muon spectrometer presently in construction for the L3 experiment at LEP. The system, controlled by an Apple II computer, is capable of localizing both defective components and faults in the printed board. It will be used to perform the large scale quality control of the amplifier cards

  2. Inter- and Intralingual Lexical Influences in Advanced Learners' French L3 Oral Production

    Science.gov (United States)

    Lindqvist, Christina

    2010-01-01

    The present study investigates lexical inter- and intralingual influences in the oral production of 14 very advanced learners of French L3. Lexical deviances are divided into two main categories: formal influence and meaning-based influence. The results show that, as predicted with respect to advanced learners, meaning-based influence is the most…

  3. Joint International Workshop on Professional Learning, Competence Development and Knowledge Management - LOKMOL and L3NCD

    NARCIS (Netherlands)

    Memmel, Martin; Ras, Eric; Weibelzahl, Stephan; Burgos, Daniel; Olmedilla, Daniel; Wolpers, Martin

    2006-01-01

    Memmel, M., Ras, E., Weibelzahl, S., Burgos, D., Olmedilla, D., & Wolpers, M. (2006). Joint International Workshop on Professional Learning, Competence Development and Knowledge Management - LOKMOL and L3NCD. Proceedings of ECTEL 2006. October 2nd-4th, Crete, Greece. Retrieved October 2nd, 2006,

  4. The Expansion of mtDNA Haplogroup L3 within and out of Africa

    Czech Academy of Sciences Publication Activity Database

    Soares, P.; Alshamali, F.; Pereira, J. B.; Fernandes, V.; Silva, N. M.; Afonso, C.; Costa, M. D.; Musilová, E.; Macaulay, V.; Richards, M. B.; Černý, Viktor; Pereira, L.

    2012-01-01

    Roč. 29, č. 3 (2012), s. 915-927 ISSN 0737-4038 R&D Projects: GA MŠk ME 917 Institutional research plan: CEZ:AV0Z80020508 Keywords : mtDNA * complete genomes * haplogroup L3 * out of Africa * modern human expansions Sub ject RIV: AC - Archeology, Anthropology, Ethnology Impact factor: 10.353, year: 2012

  5. Differential effect of L3T4+ cells on recovery from total-body irradiation

    International Nuclear Information System (INIS)

    Pantel, K.; Nakeff, A.

    1990-01-01

    We have examined the importance of L3T4+ (murine equivalent to CD4+) cells for hematopoietic regulation in vivo in unperturbed mice and mice recovering from total-body irradiation (TBI) using a cytotoxic monoclonal antibody (MoAb) raised with the GK 1.5 hybridoma. Ablating L3T4+ cells in normal (unperturbed) B6D2F1 mice substantially decreased the S-phase fraction (determined by in vivo hydroxyurea suicide) of erythroid progenitor cells (erythroid colony-forming units, CFU-E) as compared to the pretreatment level (10% +/- 14.1% [day 3 following depletion] vs 79.8% +/- 15.9%, respectively) with a corresponding decrease in the marrow content of CFU-E at this time to approximately 1% of the pretreatment value. Although the S-phase fraction of CFU-GM was decreased to 2.2% +/- 3.1% 3 days after L3T4+ cell ablation from the 21.3% +/- 8.3% pretreatment value, CFU-GM cellularity showed little change over the 3 days following anti-L3T4 treatment. Anti-L3T4 MoAb treatment had little or no effect on either the S-phase fraction or the marrow content of hematopoietic stem cells (spleen colony-forming units, CFU-S) committed to myeloerythroid differentiation. Ablating L3T4+ cells prior to a single dose of 2 Gy TBI resulted in significantly reduced marrow contents of CFU-S on day 3 and granulocyte-macrophage colony-forming units (CFU-GM) on day 6 following TBI, with little or no effect on the corresponding recovery of CFU-E. The present findings provide the first in vivo evidence that L3T4+ cells are involved in: (1) maintaining the proliferative activity of CFU-E and CFU-GM in unperturbed mice and (2) supporting the restoration of CFU-S and CFU-GM following TBI-induced myelosuppression

  6. Novel CREB3L3 Nonsense Mutation in a Family With Dominant Hypertriglyceridemia.

    Science.gov (United States)

    Cefalù, Angelo B; Spina, Rossella; Noto, Davide; Valenti, Vincenza; Ingrassia, Valeria; Giammanco, Antonina; Panno, Maria D; Ganci, Antonina; Barbagallo, Carlo M; Averna, Maurizio R

    2015-12-01

    Cyclic AMP responsive element-binding protein 3-like 3 (CREB3L3) is a novel candidate gene for dominant hypertriglyceridemia. To date, only 4 kindred with dominant hypertriglyceridemia have been found to be carriers of 2 nonsense mutations in CREB3L3 gene (245fs and W46X). We investigated a family in which hypertriglyceridemia displayed an autosomal dominant pattern of inheritance. The proband was a 49-year-old woman with high plasma triglycerides (≤1300 mg/dL; 14.68 mmol/L). Her father had a history of moderate hypertriglyceridemia, and her 51-year-old brother had triglycerides levels as high as 1600 mg/dL (18.06 mmol/L). To identify the causal mutation in this family, we analyzed the candidate genes of recessive and dominant forms of primary hypertriglyceridemia by direct sequencing. The sequencing of CREB3L3 gene led to the discovery of a novel minute frame shift mutation in exon 3 of CREB3L3 gene, predicted to result in the formation of a truncated protein devoid of function (c.359delG-p.K120fsX20). Heterozygosity for the c.359delG mutation resulted in a severe phenotype occurring later in life in the proband and her brother and a good response to diet and a hypotriglyceridemic treatment. The same mutation was detected in a 13-year-old daughter who to date is normotriglyceridemic. We have identified a novel pathogenic mutation in CREB3L3 gene in a family with dominant hypertriglyceridemia with a variable pattern of penetrance. © 2015 American Heart Association, Inc.

  7. Silicon: electrochemistry and luminescence

    NARCIS (Netherlands)

    Kooij, Ernst Stefan

    1997-01-01

    The electrochemistry of crystalline and porous silicon and the luminescence from porous silicon has been studied. One chapter deals with a model for the anodic dissolution of silicon in HF solution. In following chapters both the electrochemistry and various ways of generating visible

  8. Silicon heterojunction transistor

    International Nuclear Information System (INIS)

    Matsushita, T.; Oh-uchi, N.; Hayashi, H.; Yamoto, H.

    1979-01-01

    SIPOS (Semi-insulating polycrystalline silicon) which is used as a surface passivation layer for highly reliable silicon devices constitutes a good heterojunction for silicon. P- or B-doped SIPOS has been used as the emitter material of a heterojunction transistor with the base and collector of silicon. An npn SIPOS-Si heterojunction transistor showing 50 times the current gain of an npn silicon homojunction transistor has been realized by high-temperature treatments in nitrogen and low-temperature annealing in hydrogen or forming gas

  9. The chemistry of silicon

    CERN Document Server

    Rochow, E G; Emeléus, H J; Nyholm, Ronald

    1975-01-01

    Pergamon Texts in Organic Chemistry, Volume 9: The Chemistry of Silicon presents information essential in understanding the chemical properties of silicon. The book first covers the fundamental aspects of silicon, such as its nuclear, physical, and chemical properties. The text also details the history of silicon, its occurrence and distribution, and applications. Next, the selection enumerates the compounds and complexes of silicon, along with organosilicon compounds. The text will be of great interest to chemists and chemical engineers. Other researchers working on research study involving s

  10. Silicon Microspheres Photonics

    International Nuclear Information System (INIS)

    Serpenguzel, A.

    2008-01-01

    Electrophotonic integrated circuits (EPICs), or alternatively, optoelectronic integrated circuit (OEICs) are the natural evolution of the microelectronic integrated circuit (IC) with the addition of photonic capabilities. Traditionally, the IC industry has been based on group IV silicon, whereas the photonics industry on group III-V semiconductors. However, silicon based photonic microdevices have been making strands in siliconizing photonics. Silicon microspheres with their high quality factor whispering gallery modes (WGMs), are ideal candidates for wavelength division multiplexing (WDM) applications in the standard near-infrared communication bands. In this work, we will discuss the possibility of using silicon microspheres for photonics applications in the near-infrared

  11. Measurement of L3 subshell absorption jump ratios and jump factors for high Z elements using EDXRF technique

    International Nuclear Information System (INIS)

    Kaçal, M.R.

    2014-01-01

    Energy dispersive X-ray fluorescence technique (EDXRF) has been employed for measuring L 3 -subshell absorption jump ratios, r L 3 and jump factors, J L 3 for high Z elements. Jump factors and jump ratios for these elements have been determined by measuring L 3 subshell fluorescence parameters such as L 3 subshell X-ray production cross section σ L 3 , L 3 subshell fluorescence yield, ω L 3 , total L 3 subshell and higher subshells photoionization cross section σ L T . Measurements were performed using a Cd-109 radioactive point source and an Si(Li) detector in direct excitation experimental geometry. Measured values for jump factors and jump ratios have been compared with theoretically calculated and other experimental values. - Highlights: • This paper regards L 3 subshell absorption jump ratios and jump factors using the EDXRF method. • These parameters were measured using a new method. • This method is more useful than other methods which require much effort. • Results are in good agreement with theoretical and experimental values

  12. Revising the worksheet with L3: a language and environment foruser-script interaction

    Energy Technology Data Exchange (ETDEWEB)

    Hohn, Michael H.

    2008-01-22

    This paper describes a novel approach to the parameter anddata handling issues commonly found in experimental scientific computingand scripting in general. The approach is based on the familiarcombination of scripting language and user interface, but using alanguage expressly designed for user interaction and convenience. The L3language combines programming facilities of procedural and functionallanguages with the persistence and need-based evaluation of data flowlanguages. It is implemented in Python, has access to all Pythonlibraries, and retains almost complete source code compatibility to allowsimple movement of code between the languages. The worksheet interfaceuses metadata produced by L3 to provide selection of values through thescriptit self and allow users to dynamically evolve scripts withoutre-running the prior versions. Scripts can be edited via text editors ormanipulated as structures on a drawing canvas. Computed values are validscripts and can be used further in other scripts via simplecopy-and-paste operations. The implementation is freely available underan open-source license.

  13. Best estimate prediction for LOFT nuclear experiment L3-2

    International Nuclear Information System (INIS)

    Kee, E.J.; Shinko, M.S.; Grush, W.H.; Condie, K.G.

    1980-02-01

    Comprehensive analyses using both the RELAP4 and the RELAP5 computer codes were performed to predict the LOFT transient thermal-hydraulic response for nuclear Loss-of-Coolant Experiment L3-2 to be performed in the Loss-of-Fluid Test (LOFT) facility. The LOFT experiment will simulate a small break in one of the cold legs of a large four-loop pressurized water reactor and will be conducted with the LOFT reactor operating at 50 MW. The break in LOCE L3-2 is sized to cause the break flow to be approximately equal to the high-pressure injection system flow at an intermediate pressure of approximately 7.6 MPa

  14. Local structural disorder in REFeAsO oxypnictides by RE L3 edge XANES

    International Nuclear Information System (INIS)

    Xu, W; Chu, W S; Wu, Z Y; Marcelli, A; Di Gioacchino, D; Joseph, B; Iadecola, A; Bianconi, A; Saini, N L

    2010-01-01

    The REFeAsO (RE = La, Pr, Nd and Sm) system has been studied by RE L 3 x-ray absorption near edge structure (XANES) spectroscopy to explore the contribution of the REO spacers between the electronically active FeAs slabs in these materials. The XANES spectra have been simulated by full multiple scattering calculations to describe the different experimental features and their evolution with the RE size. The near edge feature just above the L 3 white line is found to be sensitive to the ordering/disordering of oxygen atoms in the REO layers. In addition, shape resonance peaks due to As and O scattering change systematically, indicating local structural changes in the FeAs slabs and the REO spacers due to RE size. The results suggest that interlayer coupling and oxygen order/disorder in the REO spacers may have an important role in the superconductivity and itinerant magnetism of the oxypnictides.

  15. XPS and Ag L3-edge XANES characterization of silver and silver-gold sulfoselenides

    Science.gov (United States)

    Mikhlin, Yuri L.; Pal'yanova, Galina A.; Tomashevich, Yevgeny V.; Vishnyakova, Elena A.; Vorobyev, Sergey A.; Kokh, Konstantin A.

    2018-05-01

    Gold and silver sulfoselenides are of interest as materials with high ionic conductivity and promising magnetoresistive, thermoelectric, optical, and other physico-chemical properties, which are strongly dependent on composition and structure. Here, we applied X-ray photoelectron spectroscopy and Ag L3 X-ray absorption near-edge structure (XANES) to study the electronic structures of low-temperature compounds and solid solutions Ag2SxSe1-x (0 compounds; in particular, the Ag L3-edge peak is about 35% lower for AgAuS relative to Ag2S. At the same time, the Au 4f binding energy and, therefore, charge at Au(I) sites increase with increasing S content due to the transfer of electron density from Au to Ag atoms. It was concluded that the effects mainly originate from shortening of the metal-chalcogen and especially the Ausbnd Ag interatomic distances in substances having similar coordination geometry.

  16. Results on the calibration of the L3 BGO calorimeter with cosmic rays

    International Nuclear Information System (INIS)

    Bakken, J.A.; Barone, L.; Bay, A.; Blaising, J.J.; Borgia, B.; Bourilkov, D.; Boutigny, D.; Brock, I.C.; Buisson, C.; Capell, M.; Chaturvedi, U.K.; Chemarin, M.; Clare, R.; Coignet, G.; Denes, P.; DeNotaristefani, F.; Diemoz, M.; Duchesneau, D.; El Mamouni, H.; Extermann, P.; Fay, J.; Ferroni, F.; Gailloud, M.; Goujon, D.; Gratta, G.; Gupta, V.K.; Hilgers, K.; Ille, B.; Janssen, H.; Karyotakis, Y.; Kasser, A.; Kienzle-Focacci, M.N.; Krenz, W.; Lebrun, P.; Lecoq, P.; Leonardi, E.; Linde, F.L.; Lindemann, B.; Longo, E.; Lu, Y.S.; Luci, C.; Luckey, D.; Martin, J.P.; Merk, M.; Micke, M.; Morganti, S.; Newman, H.; Organtini, G.; Piroue, P.A.; Read, K.; Rosier-Lees, S.; Rosselet, P.; Sauvage, G.; Schmitz, D.; Schneegans, M.; Schwenke, J.; Stickland, D.P.; Tully, C.; Valente, E.; Vivargent, M.; Vuilleumier, L.; Wang, Y.F.; Weber, A.; Weill, R.; Wenninger, J.

    1994-01-01

    During 1991 two cosmic rays runs took place for the calibration of the L3 electromagnetic calorimeter. In this paper we present the results of the first high statistics cosmic ray calibration of the calorimeter in situ, including the end caps. Results show that the accuracy on the measurement of the calibration constants that can be achieved in one month of data taking is of 1.3%. (orig.)

  17. The effect of symmetry on the U L3 NEXAFS of octahedral coordinated uranium(vi)

    Energy Technology Data Exchange (ETDEWEB)

    Bagus, Paul S. [Department of Chemistry, University of North Texas, Denton, Texas 76203-5017, USA; Nelin, Connie J. [Consultant, Austin, Texas 78730, USA; Ilton, Eugene S. [Pacific Northwest National Laboratory, Richland, Washington 99352, USA

    2017-03-21

    We describe a detailed theoretical analysis of how distortions from ideal cubic or Oh symmetry affect the shape, in particular the width, of the U L3-edge NEXAFS for U(VI) in octahedral coordination. The full-width-half-maximum (FWHM) of the L3-edge white line decreases with increasing distortion from Oh symmetry due to the mixing of symmetry broken t2g and eg components of the excited state U(6d) orbitals. The mixing is allowed because of spin-orbit splitting of the ligand field split 6d orbitals. Especially for higher distortions, it is possible to identify a mixing between one of the t2g and one of the eg components, allowed in the double group representation when the spin-orbit interaction is taken into account. This mixing strongly reduces the ligand field splitting, which, in turn, leads to a narrowing of the U L3 white line. However, the effect of this mixing is partially offset by an increase in the covalent anti-bonding character of the highest energy spin-orbit split eg orbital. At higher distortions, mixing overwhelms the increasing anti-bonding character of this orbital which leads to an accelerated decrease in the FWHM with increasing distortion. Additional evidence for the effect of mixing of t2g and eg components is that the FWHM of the white line narrows whether the two axial U-O bond distances shorten or lengthen. Our ab initio theory uses relativistic wavefunctions for cluster models of the structures; empirical or semi-empirical parameters were not used to adjust prediction to experiment. A major advantage is that it provides a transparent approach for determining how the character and extent of the covalent mixing of the relevant U and O orbitals affect the U L3-edge white line.

  18. Monitoring and control of the muon detector in the L3 experiment at LEP

    International Nuclear Information System (INIS)

    Gonzalez, E.

    1990-01-01

    In this report the monitoring system of the muon spectrometer of the L3 detector in LEP at CERN is presented. The system is based on a network of VME's using the OS9 operating system. The design guiding lines and the present system configuration are described both from the hardware and the software point of view. In addition, the report contains the description of the monitored parameters showing typical data collected durintg the first months of LEP operation. (Author)

  19. Search on charginos and neutralinos with the L3 detector at LEP

    International Nuclear Information System (INIS)

    Chereau, Xavier

    1998-01-01

    This work presents an experimental search for supersymmetric particles, the charginos and the neutralinos, at center of mass energies √ 161, 172 and 183 GeV, with the L3 detector at the e + e - collider LEP. Assuming R-parity conservation, SUSY events have a large missing energy, carried by the lightest supersymmetric particle (LSP), which allow us to distinguish them from standard events. Then, for all the studied final states and all the energies, we optimized the selections in order to have the best signal-to-noise ratio. No excess of events were observed with respect to the standard model predictions. We set upper limits on the chargino and neutralino production cross sections. In the frame of the constraint MSSM, these results were combined with the results from the L3 slepton analyses to set lower limits on the chargino and neutralino masses: particularly, we exclude a neutralino χ 1 0 bar lighter than 25.9 GeV/c 2 (95% C.L.). This result plays an important role for the interpretation of the dark matter in universe. The search for events with missing energy needs a detector with a good hermeticity. At the end of 1995, a new electromagnetic calorimeter was installed in the L3 experiment. Here we present the improvements of performances and the calibration of this detector composed of 48 bricks made with lead and scintillating fibers (SPACAL)

  20. Search for supersymmetry in 2 different topologies with the L3 detector at Lep

    International Nuclear Information System (INIS)

    Balandras, A.

    2000-01-01

    The present thesis presents two different aspects of my work in the L3 experiment, which are on one side the search for supersymmetric particles, the scalar leptons, in two different topologies 'electron + X + E' and '2 leptons + 2 photons + E', each of them being related to two theoretical SUSY models, m-SUGRA and GMSB. On the other side my work has been completed by the study of the BGO crystal electromagnetic calorimeter of L3, and the calibration of the electromagnetic calorimeter EGAP. After the essential motivations being reviewed, the production and disintegration modes are detailed concerning the scalar lepton sector at LEP. Then one presents the analysis techniques which I used to perform my selection, and also the results obtained from the data collected by L3 for center of mass energies between √ S =183 GeV and 202 GeV. The selection criteria that allow to isolate the events I looked for, including efficiencies but also the background rate coming from Standard Model that one can expect are presented. The final interpretations of those results in both frameworks of m-SUGRA and GMSB are detailed at the end of this thesis. I took benefit of those results to derive some limits on the masses of the scalar leptons that do not depend on the free parameters of the SUSY models, especially on the selectron mass in the framework of m-SUGRA: M e -tilde R > 71.2 GeV. (authors)

  1. Search for scalar leptons at LEP with the L3 detector

    CERN Document Server

    Xia, Lei

    2002-01-01

    In this thesis, I present a search for scalar leptons in e+e- annihilation using the L3 detector at LEP. Data collected in 1999 and 2000, at center-of-mass energies between 192 GeV and 208 GeV, was used in this analysis. This work covered the scalar lepton searches in both SUGRA and GMSB models. To achieve this analysis, a parametrized selection was developed to handle the different event signatures in SUGRA models. Improvement of the L3 simulation and reconstruction program packages was carried out so that one can simulated the scalar leptons in GMSB models correctly. The simulation of the L3 Time Expansion Chamber (TEC) dE/dx measurement was rewritten to facilitate the analysis for a stable slepton signal, which is relevant in some parts of the parameter space in GMSB models. In this analysis, we didn't abserve any significant indication of scalar lepton production of any type. We achieved the following mass exclusion limits for scalar leptons in SUGRA models, for large dM: M(scalar e) > 97 GeV (expected 97...

  2. Determination of the masses of electrical weak gauge bosons with L3

    CERN Document Server

    Rosenbleck, Christian

    2006-01-01

    This thesis presents the measurement of the masses of the carriers of the weak force in the Standard Model of Particle Physics, the gauge bosons W and Z. The masses are determined using the kinematics of the bosons' decay products. The data were collected by the L3 experiment at the Large Electron Positron Collider (LEP) at centre-of-mass energies, sqrt(s), between 183 GeV and 209 GeV in the years 1997 to 2000. The mass of the Z-boson, mZ, is already known very precisely: The L3 collaboration determined it to be mZ = 91.1898 +- 0.0031 GeV from a scan of the Z resonance. Therefore the main aim of this analysis is not the determination of the numerical value of mZ; instead the analysis is used to cross-check the measurement of the W boson mass since the methods are similar. Alternatively, the analysis can be used to measure the mean centre-of-mass energy at the L3 interaction point. The Z-boson mass is determined to be mZ = 91.272 +- 0.046 GeV. If interpreted as measurement of the centre-of-mass energy, this va...

  3. Psychometric Properties of the Italian Version of the Young Schema Questionnaire L-3: Preliminary Results

    Directory of Open Access Journals (Sweden)

    Aristide Saggino

    2018-03-01

    Full Text Available Schema Therapy (ST is a well-known approach for the treatment of personality disorders. This therapy integrates different theories and techniques into an original and systematic treatment model. The Young Schema Questionnaire L-3 (YSQ-L3 is a self-report instrument, based on the ST model, designed to assess 18 Early Maladaptive Schemas (EMSs. During the last decade, it has been translated and validated in different countries and languages. This study aims to establish the psychometric properties of the Italian Version of the YSQ-L3. We enrolled two groups: a clinical (n = 148 and a non-clinical one (n = 918. We investigated the factor structure, reliability and convergent validity with anxiety and depression between clinical and non-clinical groups. The results highlighted a few relevant findings. Cronbach's alpha showed significant values for all the schemas. All of the factor models do not seem highly adequate, even if the hierarchical model has proven to be the most significant one. Furthermore, the questionnaire confirms the ability to discriminate between clinical and non-clinical groups and could represent a useful tool in the clinical practice. Limitations and future directions are discussed.

  4. Chiral silicon nanostructures

    International Nuclear Information System (INIS)

    Schubert, E.; Fahlteich, J.; Hoeche, Th.; Wagner, G.; Rauschenbach, B.

    2006-01-01

    Glancing angle ion beam assisted deposition is used for the growth of amorphous silicon nanospirals onto [0 0 1] silicon substrates in a temperature range from room temperature to 475 deg. C. The nanostructures are post-growth annealed in an argon atmosphere at various temperatures ranging from 400 deg. C to 800 deg. C. Recrystallization of silicon within the persisting nanospiral configuration is demonstrated for annealing temperatures above 800 deg. C. Transmission electron microscopy and Raman spectroscopy are used to characterize the silicon samples prior and after temperature treatment

  5. Silicon web process development

    Science.gov (United States)

    Duncan, C. S.; Seidensticker, R. G.; Mchugh, J. P.; Skutch, M. E.; Driggers, J. M.; Hopkins, R. H.

    1981-01-01

    The silicon web process takes advantage of natural crystallographic stabilizing forces to grow long, thin single crystal ribbons directly from liquid silicon. The ribbon, or web, is formed by the solidification of a liquid film supported by surface tension between two silicon filaments, called dendrites, which border the edges of the growing strip. The ribbon can be propagated indefinitely by replenishing the liquid silicon as it is transformed to crystal. The dendritic web process has several advantages for achieving low cost, high efficiency solar cells. These advantages are discussed.

  6. Precise measurement of muon momenta at LEP using the L3 detector

    International Nuclear Information System (INIS)

    Gonzalez Romero, E.M.

    1990-01-01

    In this PhD report the author presents the studies and methods developed to achieve the optimization of the resolution in the momentum measurement of the L3 moun detector. Chapters 1 and 2 show the motivations to build a precision muon detector for the LEP e + e - collider. Special emphasis is applied to the study of the Higgs scalar boson search and identification and the guiding principles used to design the L3 muon detector are outlined. Chapter 3 is devoted to the description of the drift chambers. They are located in three concentric octagonal cylinders inside one solenoidal magnet, around the interaction point and coaxial with the beams. These chambers are the measuring elements of the detector. The chapter includes the description or the different tests applied to the chambers to obtain their resolution and calibration. In chapter 4 the alignment system of this chambers is described. This system is a key element to the precision of the detector, that being 12 meters long and of 12 meters of diameter has to measure the particles trajectories with precisions of just a few micrometers. Chapter 5 describes the third key piece for the detector precision, the monitoring and control system. It allows to know continually the precise values of the critical parameters of the detector. Finally in chapter 6 the author presents the results of the many test applied to the detector using cosmic rays, UV lasers and even the actual muons produced in the e + e - interactions. These tests prove that the L3 muon detector is the most precise measuring system for muon momenta installed at present in one e + e - collider ring. (Author)

  7. The arouser EPS8L3 gene is critical for normal memory in Drosophila.

    Directory of Open Access Journals (Sweden)

    Holly LaFerriere

    Full Text Available The genetic mechanisms that influence memory formation and sensitivity to the effects of ethanol on behavior in Drosophila have some common elements. So far, these have centered on the cAMP/PKA signaling pathway, synapsin and fas2-dependent processes, pumilio-dependent regulators of translation, and a few other genes. However, there are several genes that are important for one or the other behaviors, suggesting that there is an incomplete overlap in the mechanisms that support memory and ethanol sensitive behaviors. The basis for this overlap is far from understood. We therefore examined memory in arouser (aru mutant flies, which have recently been identified as having ethanol sensitivity deficits. The aru mutant flies showed memory deficits in both short-term place memory and olfactory memory tests. Flies with a revertant aru allele had wild-type levels of memory performance, arguing that the aru gene, encoding an EPS8L3 product, has a role in Drosophila memory formation. Furthermore, and interestingly, flies with the aru(8-128 insertion allele had deficits in only one of two genetic backgrounds in place and olfactory memory tests. Flies with an aru imprecise excision allele had deficits in tests of olfactory memory. Quantitative measurements of aru EPS8L3 mRNA expression levels correlate decreased expression with deficits in olfactory memory while over expression is correlated with place memory deficits. Thus, mutations of the aru EPS8L3 gene interact with the alleles of a particular genetic background to regulate arouser expression and reveals a role of this gene in memory.

  8. Galactosylation of steroidal saponins by β-galactosidase from Lactobacillus bulgaricus L3.

    Science.gov (United States)

    Zhang, Jie; Lu, Lili; Lu, Li; Zhao, Yang; Kang, Liping; Pang, Xu; Liu, Jingyuan; Jiang, Tengchuan; Xiao, Min; Ma, Baiping

    2016-02-01

    The galactosylation of furostanosides and spirostanosides were investigated by using β-galactosidase from Lactobacillus bulgaricus L3 as a catalyst and lactose as a sugar donor. Four novel galactosylated furostanoside products (compounds 1-4) from compound F, compound G, compound I, and compound H were obtained and their structures were identified by HR-ESI-MS, 1D and 2D NMR spectra. The result showed that galactosyl moiety was found to be added to the 6-OH of the 26-O-glucosyl in these four furostanoside substrates.

  9. Measurement of the photon structure function F2 gamma with the L3 detector at LEP

    CERN Document Server

    Achard, P.; Aguilar-Benitez, M.; Alcaraz, J.; Alemanni, G.; Allaby, J.; Aloisio, A.; Alviggi, M.G.; Anderhub, H.; Andreev, Valery P.; Anselmo, F.; Arefev, A.; Azemoon, T.; Aziz, T.; Bagnaia, P.; Bajo, A.; Baksay, G.; Baksay, L.; Baldew, S.V.; Banerjee, S.; Banerjee, Sw.; Barczyk, A.; Barillere, R.; Bartalini, P.; Basile, M.; Batalova, N.; Battiston, R.; Bay, A.; Becattini, F.; Becker, U.; Behner, F.; Bellucci, L.; Berbeco, R.; Berdugo, J.; Berges, P.; Bertucci, B.; Betev, B.L.; Biasini, M.; Biglietti, M.; Biland, A.; Blaising, J.J.; Blyth, S.C.; Bobbink, G.J.; Bohm, A.; Boldizsar, L.; Borgia, B.; Bottai, S.; Bourilkov, D.; Bourquin, M.; Braccini, S.; Branson, J.G.; Brochu, F.; Burger, J.D.; Burger, W.J.; Cai, X.D.; Capell, M.; Cara Romeo, G.; Carlino, G.; Cartacci, A.; Casaus, J.; Cavallari, F.; Cavallo, N.; Cecchi, C.; Cerrada, M.; Chamizo, M.; Chang, Y.H.; Chemarin, M.; Chen, A.; Chen, G.; Chen, G.M.; Chen, H.F.; Chen, H.S.; Chiefari, G.; Cifarelli, L.; Cindolo, F.; Clare, I.; Clare, R.; Coignet, G.; Colino, N.; Costantini, S.; de la Cruz, B.; Cucciarelli, S.; de Asmundis, R.; Deglon, P.; Debreczeni, J.; Degre, A.; Dehmelt, K.; Deiters, K.; della Volpe, D.; Delmeire, E.; Denes, P.; DeNotaristefani, F.; De Salvo, A.; Diemoz, M.; Dierckxsens, M.; Dionisi, C.; Dittmar, M.; Doria, A.; Dova, M.T.; Duchesneau, D.; Duda, M.; Echenard, B.; Eline, A.; El Hage, A.; El Mamouni, H.; Engler, A.; Eppling, F.J.; Extermann, P.; Falagan, M.A.; Falciano, S.; Favara, A.; Fay, J.; Fedin, O.; Felcini, M.; Ferguson, T.; Fesefeldt, H.; Fiandrini, E.; Field, J.H.; Filthaut, F.; Fisher, P.H.; Fisher, W.; Fisk, I.; Forconi, G.; Freudenreich, K.; Furetta, C.; Galaktionov, Iouri; Ganguli, S.N.; Garcia-Abia, Pablo; Gataullin, M.; Gentile, S.; Giagu, S.; Gong, Z.F.; Grenier, Gerald Jean; Grimm, O.; Gruenewald, M.W.; Guida, M.; Gupta, V.K.; Gurtu, A.; Gutay, L.J.; Haas, D.; Hatzifotiadou, D.; Hebbeker, T.; Herve, Alain; Hirschfelder, J.; Hofer, H.; Hohlmann, M.; Holzner, G.; Hou, S.R.; Jin, B.N.; Jindal, P.; Jones, Lawrence W.; de Jong, P.; Josa-Mutuberria, I.; Kaur, M.; Kienzle-Focacci, M.N.; Kim, J.K.; Kirkby, Jasper; Kittel, W.; Klimentov, A.; Konig, A.C.; Kopal, M.; Koutsenko, V.; Kraber, M.; Kraemer, R.W.; Kruger, A.; Kunin, A.; Ladron de Guevara, P.; Laktineh, I.; Landi, G.; Lebeau, M.; Lebedev, A.; Lebrun, P.; Lecomte, P.; Lecoq, P.; Le Coultre, P.; Le Goff, J.M.; Leiste, R.; Levtchenko, M.; Levtchenko, P.; Li, C.; Likhoded, S.; Lin, C.H.; Lin, W.T.; Linde, F.L.; Lista, L.; Liu, Z.A.; Lohmann, W.; Longo, E.; Lu, Y.S.; Luci, C.; Luminari, L.; Lustermann, W.; Ma, W.G.; Malgeri, L.; Malinin, A.; Mana, C.; Mans, J.; Martin, J.P.; Marzano, F.; Mazumdar, K.; McNeil, R.R.; Mele, S.; Mermod, P.; Merola, L.; Meschini, M.; Metzger, W.J.; Mihul, A.; Milcent, H.; Mirabelli, G.; Mnich, J.; Mohanty, G.B.; Muanza, G.S.; Muijs, A.J.M.; Musicar, B.; Musy, M.; Nagy, S.; Natale, S.; Napolitano, M.; Nessi-Tedaldi, F.; Newman, H.; Nisati, A.; Novak, T.; Kluge, Hannelies; Ofierzynski, R.; Organtini, G.; Pal, I.; Palomares, C.; Paolucci, P.; Paramatti, R.; Passaleva, G.; Patricelli, S.; Paul, Thomas Cantzon; Pauluzzi, M.; Paus, C.; Pauss, F.; Pedace, M.; Pensotti, S.; Perret-Gallix, D.; Piccolo, D.; Pierella, F.; Pioppi, M.; Piroue, P.A.; Pistolesi, E.; Plyaskin, V.; Pohl, M.; Pojidaev, V.; Pothier, J.; Prokofev, D.; Rahal-Callot, G.; Rahaman, Mohammad Azizur; Raics, P.; Raja, N.; Ramelli, R.; Rancoita, P.G.; Ranieri, R.; Raspereza, A.; Razis, P.; Ren, D.; Rescigno, M.; Reucroft, S.; Riemann, S.; Riles, Keith; Roe, B.P.; Romero, L.; Rosca, A.; Rosemann, C.; Rosenbleck, C.; Rosier-Lees, S.; Roth, Stefan; Rubio, J.A.; Ruggiero, G.; Rykaczewski, H.; Sakharov, A.; Saremi, S.; Sarkar, S.; Salicio, J.; Sanchez, E.; Schafer, C.; Schegelsky, V.; Schopper, H.; Schotanus, D.J.; Sciacca, C.; Servoli, L.; Shevchenko, S.; Shivarov, N.; Shoutko, V.; Shumilov, E.; Shvorob, A.; Son, D.; Souga, C.; Spillantini, P.; Steuer, M.; Stickland, D.P.; Stoyanov, B.; Straessner, A.; Sudhakar, K.; Sultanov, G.; Sun, L.Z.; Sushkov, S.; Suter, H.; Swain, J.D.; Szillasi, Z.; Tang, X.W.; Tarjan, P.; Tauscher, L.; Taylor, L.; Tellili, B.; Teyssier, D.; Timmermans, Charles; Ting, Samuel C.C.; Ting, S.M.; Tonwar, S.C.; Toth, J.; Tully, C.; Tung, K.L.; Ulbricht, J.; Valente, E.; Van de Walle, R.T.; Vasquez, R.; Veszpremi, V.; Vesztergombi, G.; Vetlitsky, I.; Viertel, G.; Villa, S.; Vivargent, M.; Vlachos, S.; Vodopianov, I.; Vogel, H.; Vogt, H.; Vorobev, I.; Vorobyov, A.A.; Wadhwa, M.; Wang, Q.; Wang, X.L.; Wang, Z.M.; Weber, M.; Wynhoff, S.; Xia, L.; Xu, Z.Z.; Yamamoto, J.; Yang, B.Z.; Yang, C.G.; Yang, H.J.; Yang, M.; Yeh, S.C.; Zalite, An.; Zalite, Yu.; Zhang, Z.P.; Zhao, J.; Zhu, G.Y.; Zhu, R.Y.; Zhuang, H.L.; Zichichi, A.; Zimmermann, B.; Zoller, M.

    2005-01-01

    The e+e- -> e+e- hadrons reaction, where one of the two electrons is detected in a low polar-angle calorimeter, is analysed in order to measure the hadronic photon structure function F2gamma . The full high-energy and high-luminosity data set, collected with the L3 detector at centre-of-mass energies 189-209GeV, corresponding to an integrated luminosity of 608/pb is used. The Q^2 range 11-34GeV^2 and the x range 0.006-0.556 are considered. The data are compared with recent parton density functions.

  10. T-odd correlations in radiative K+l3 decays and chiral perturbation theory

    International Nuclear Information System (INIS)

    Mueller, E.H.; Kubis, B.; Meissner, U.G.

    2006-01-01

    The charged kaon decay channel K + l3γ allows for studies of direct CP violation, possibly due to non-standard mechanisms, with the help of T-odd correlation variables. In order to be able to extract a CP-violating signal from experiment, it is necessary to understand all possible standard model phases that also produce T-odd asymmetries. We complement earlier studies by considering strong interaction phases in hadronic structure functions that appear at higher orders in chiral perturbation theory, and we compare our findings to other potential sources of asymmetries. (orig.)

  11. After-dinner speech: the path of LISA to become ‘L3

    Science.gov (United States)

    Huber, M. C. E.

    2017-05-01

    We describe the state of fundamental-physics experiments in space in the mid 1980s on both sides of the Atlantic, and then follow the development of this field within ESA’s Scientific Programme. The special case of LISA — a fundamental physics experiment in space also supported by astronomers, and now, following the ground-based detection of gravitational waves, the means to extend the observable spectrum of such waves towards lower frequencies and long-lasting signals — is then followed in its rise to become the ‘Large Project L3’ of ESA.

  12. The second level trigger of the L3 experiment. Pt. 2

    International Nuclear Information System (INIS)

    Beingessner, S.P.; Blaising, J.J.; Chollet-Le Flour, F.; Degre, A.; Dromby, G.; Goy, C.; Lecoq, J.; Morand, R.; Moynot, M.; Perrot, G.; Rosier-Lees, S.; Forconi, G.

    1993-07-01

    The events recorded by the L3 Data Acquisition System are selected by three levels of trigger. The event filtering performed by software at the second trigger level is described. First coded offline in FORTRAN, the filtering software is microcoded for online execution in a farm of 3 XOP processors operating in a round robin mode. It identifies and rejects background events. Depending on running conditions and trigger type, rejection factors ranging from 45% to 80% are obtained on first level energy, muon and tec triggers. Selection efficiencies greater than 99.95% are achieved. (authors). 14 refs., 3 figs., 2 tabs

  13. Isolation of L-3-phenyllactyl-Phe-Lys-Ala-NH2 (Antho-KAamide), a novel neuropeptide from sea anemones

    DEFF Research Database (Denmark)

    Nothacker, H P; Rinehart, K L; Grimmelikhuijzen, C J

    1991-01-01

    sea anemones. We propose that the L-3-phenyllactyl residue renders Antho-KAamide resistant to nonspecific aminopeptidases, thereby increasing the stability of the neuropeptide after neuronal release. The existence of the L-3-phenyllactyl residue in 3 neuropeptides isolated so far suggests...

  14. Cross-Linguistic Influence in Third Language Perception: L2 and L3 Perception of Japanese Contrasts

    Science.gov (United States)

    Onishi, Hiromi

    2013-01-01

    This dissertation examines the possible influence of language learners' second language (L2) on their perception of phonological contrasts in their third language (L3). Previous studies on Third Language Acquisition (TLA) suggest various factors as possible sources of cross-linguistic influence in the acquisition of an L3. This dissertation…

  15. Solitary lower lumbar osteochondroma (spinous process of L3 involvement): a case report.

    Science.gov (United States)

    Hassankhani, Ebrahim Ghayem

    2009-12-20

    Solitary osteochondromas, which are the most common benign bone tumors of long bones, are rarely found in the vertebral column. A 16-year-old female patient presented with a hard palpable mass at lower lumbar region like a congenital deformity. Plain radiography illustrated a well-defined solid mass arising from the posterior elements of the L3 and ruled out any congenital anomalies. A computed tomography scan further determined a mass that arose from the spinous process of L3. The tumor was excised en bloc through a posterior approach and histopathological examination verified the diagnosis of osteocondroma.Osteochondromas are rarely found in the spine, when present in the spine, however, have a predilection for cervical or upper thoracic region arising usually from lamina of vertebrae and are rare in lumbosacral region and very rare at spinous process of the vertebrae.We present a case of osteochondroma locates in lumbar region and spinous process of vertebrae with unusual presentation and was considered clinically as congenital lumbar kyphosis.

  16. The second level trigger of the L3 experiment. Pt. 1

    International Nuclear Information System (INIS)

    Bertsch, Y.; Blaising, J.J.; Bonnefon, H.; Chollet-Leflour, F.; Degre, A.; Dromby, G.; Lecoq, J.; Morand, R.; Moynot, M.; Perrot, G.; Riccadonna, X.

    1994-01-01

    The second level trigger of the L3 experiment performs online background rejection and reduces the first level trigger rate to a value fitting with the third level trigger processing capability. Designed around a set of three bit-slice XOP microprocessors, it can process up to 500 first level triggers per second without significant dead time in the data acquisition. At each LEP beam crossing (45/90 kHz) the complete trigger information (5 kbytes) is memorized in a 1.4 gigabyte bandwidth real dual port memory. The XOP processor builds up the trigger block in less than 400 μs, and signs the background or physics origin of the current event in less than 3 ms. These very high performances rely essentially on the association of parallelism with high speed ECL technology, provided by dedicated processors fully integrated in Fastbus. Emphasis is given here to the specific hardware developed, to its operation and technical aspects of its installation and integration. The system described here ensures the L3 data taking since the beginning of LEP in July 1989 and the online rejection since 1990. (orig.)

  17. Resistance to the peptidyl transferase inhibitor tiamulin caused by mutation of ribosomal protein l3.

    Science.gov (United States)

    Bøsling, Jacob; Poulsen, Susan M; Vester, Birte; Long, Katherine S

    2003-09-01

    The antibiotic tiamulin targets the 50S subunit of the bacterial ribosome and interacts at the peptidyl transferase center. Tiamulin-resistant Escherichia coli mutants were isolated in order to elucidate mechanisms of resistance to the drug. No mutations in the rRNA were selected as resistance determinants using a strain expressing only a plasmid-encoded rRNA operon. Selection in a strain with all seven chromosomal rRNA operons yielded a mutant with an A445G mutation in the gene coding for ribosomal protein L3, resulting in an Asn149Asp alteration. Complementation experiments and sequencing of transductants demonstrate that the mutation is responsible for the resistance phenotype. Chemical footprinting experiments show a reduced binding of tiamulin to mutant ribosomes. It is inferred that the L3 mutation, which points into the peptidyl transferase cleft, causes tiamulin resistance by alteration of the drug-binding site. This is the first report of a mechanism of resistance to tiamulin unveiled in molecular detail.

  18. Observation of cosmic hard x-ray by L-3H-9 rocket

    International Nuclear Information System (INIS)

    Hayakawa, Sachio; Makino, Fumiyoshi; Matsui, Yutaka; Fukada, Yutaka.

    1978-01-01

    It has been considered that the isotropic constituents of cosmic hard X-ray have their origins outside the galactic system. As the spectra are uncertain, the generation mechanism of X-ray has not been clearly known yet. It was attempted to make more reliable observation by shutter method and the technique removing charged particles, using the L-3H-8 rocket. The equipment consists of NaI scintillation counter, a front counter, a Xenon counter, a UV sensor, a collimator, a shutter and a shutter-driving device. The L-3H-9 rocket was launched on August 16, 1977, and reached height of 310 km in about 300 seconds. Then the observation was started, but it was not able to observe the isotropic constituents of hard X-ray which were aimed at, as the shutter didn't work normally. It is expected to make another observation with the K-9M-64 rocket in August, 1978, after investigating the action of the shutter and employing and improved driving device. (Kobatake, H.)

  19. The Solar Flare of the 14th of July 2000 (L3+C detector results)

    CERN Document Server

    Achard, P; Aguilar-Benítez, M; Van den Akker, M; Alcaraz, J; Alemanni, G; Allaby, James V; Aloisio, A; Alviggi, M G; Anderhub, H; Andreev, V P; Anselmo, F; Arefev, A; Azemoon, T; Aziz, T; Bagnaia, P; Bajo, A; Baksay, G; Baksay, L; Bähr, J; Baldew, S V; Banerjee, S; Banerjee, Sw; Barczyk, A; Barillère, R; Bartalini, P; Basile, M; Batalova, N; Battiston, R; Bay, A; Becattini, F; Becker, U; Behner, F; Bellucci, L; Berbeco, R; Berdugo, J; Berges, P; Bertucci, B; Betev, B L; Biasini, M; Biglietti, M; Biland, A; Blaising, J J; Blyth, S C; Bobbink, G J; Böhm, A; Boldizsar, L; Borgia, B; Bottai, S; Bourilkov, D; Bourquin, M; Braccini, S; Branson, J G; Brochu, F; Burger, J D; Burger, W J; Cai, X D; Capell, M; Cara Romeo, G; Carlino, G; Cartacci, A; Casaus, J; Cavallari, F; Cavallo, N; Cecchi, C; Cerrada, M; Chamizo-Llatas, M; Chiarusi, T; Chang, Y H; Chemarin, M; Chen, A; Chen, G; Chen, G M; Chen, H F; Chen, H S; Chiefari, G; Cifarelli, L; Cindolo, F; Clare, I; Clare, R; Coignet, G; Colino, N; Costantini, S; Dela Cruz, B; Cucciarelli, S; De Asmundis, R; Dglon, P; Debreczeni, J; Degré, A; Dehmelt, K; Deiters, K; Della Volpe, D; Delmeire, E; Denes, P; De Notaristefani, F; De Salvo, A; Diemoz, M; Dierckxsens, M; Ding, L K; Dionisi, C; Dittmar, M; Doria, A; Dova, M T; Duchesneau, D; Duda, M; Durán, I; Echenard, B; Eline, A; El-Hage, A; El-Mamouni, H; Engler, A; Eppling, F J; Extermann, P; Faber, G; Falagán, M A; Falciano, S; Favara, A; Fay, J; Fedin, O; Felcini, M; Ferguson, T; Fesefeldt, H S; Fiandrini, E; Field, J H; Filthaut, F; Fisher, W; Forconi, G; Freudenreich, K; Furetta, C; Galaktionov, Yu; Ganguli, S N; García-Abia, P; Gataullin, M; Gentile, S; Giagu, S; Gong, Z F; Grenier, G; Grabosch, H J; Grimm, O; Groenstege, H; Grünewald, M W; Guida, M; Guo, Y N; Gupta, S K; Gupta, V K; Gurtu, A; Gutay, L J; Haas, D; Haller, C; Hatzifotiadou, D; Hayashi, Y; He, Z X; Hebbeker, T; Herv, A; Hirschfelder, J; Hofer, H; Hohlmann, M; Holzner, A; Hou, S R; Huo, A X; Ito, N; Jin, B N; Jindal, P; Jing, C L; Jones, L W; de Jong, P; Josa-Mutuberria, I; Kantserov, V A; Kaur, M; Kawakami, S; Kienzle-Focacci, M N; Kim, J K; Kirkby, Jasper; Kittel, W; Klimentov, A; König, A C; Kok, E; Korn, A; Kopal, M; Koutsenko, V F; Kraber, M; Kuang, H H; Krämer, R W; Krüger, A; Kuijpers, J; Kunin, A; Ladrón de Guevara, P; Laktineh, I; Landi, G; Lebeau, M; Lebedev, A; Lebrun, P; Lecomte, P; Lecoq, P; Le Coultre, P; Le Goff, J M; Lei, Y; Leich, H; Leiste, R; Levtchenko, M; Levchenko, P M; Li, C; Li, L; Li, Z C; Likhoded, S; Lin, C H; Lin, W T; Linde, Frank L; Lista, L; Liu, Z A; Lohmann, W; Longo, E; Lü, Y S; Luci, C; Luminari, L; Lustermann, W; Ma, W G; Ma, X H; Ma, Y Q; Malgeri, L; Malinin, A; Maña, C; Mans, J; Martin, J P; Marzano, F; Mazumdar, K; McNeil, R R; Meng, X W; Merola, L; Meschini, M; Metzger, W J; Mihul, A; Van Mil, A; Milcent, H; Mirabelli, G; Mnich, J; Mohanty, G B; Monteleoni, B; Muanza, G S; Muijs, A J M; Musy, M; Nagy, S; Nahnhauer, R; Naumov, V A; Natale, S; Napolitano, M; Nessi-Tedaldi, F; Newman, H; Nisati, A; Novák, T; Nowak, H; Ofierzynski, R A; Organtini, G; Pal, I; Palomares, C; Paolucci, P; Paramatti, R; Parriaud, J F; Passaleva, G; Patricelli, S; Paul, T; Pauluzzi, M; Paus, C; Pauss, F; Pedace, M; Pensotti, S; Perret-Gallix, D; Petersen, B; Piccolo, D; Pierella, F; Pieri, M; Pioppi, M; Piroué, P A; Pistolesi, E; Plyaskin, V; Pohl, M; Pozhidaev, V; Pothier, J; Prokofev, D; Prokofiev, D O; Qing, C R; Rahal-Callot, G; Rahaman, M A; Raics, P; Raja, N; Ramelli, R; Rancoita, P G; Ranieri, R; Raspereza, A V; Ravindran, K C; Razis, P; Rembeczki, S; Ren, D; Rescigno, M; Reucroft, S; Rewiersma, P A M; Riemann, S; Rojkov, A; Romero, L; Rosca, A; Rosemann, C; Rosenbleck, C; Rosier-Lees, S; Roth, S; Rubio, J A; Ruggiero, G; Rykaczewski, H; Sakharov, A; Saremi, S; Sarkar, S; Salicio, J; Sánchez, E; Schäfer, C; Shchegelskii, V; Schöneich, B; Schotanus, D J; Sciacca, C; Servoli, L; Shen, C Q; Shevchenko, S; Shivarov, N; Shoutko, V; Shumilov, E; Shvorob, A; Son, D; Souga, C; Spillantini, P; Steuer, M; Stickland, D P; Stoyanov, B; Strässner, A; Sudhakar, K; Sultanov, G G; Sun, L Z; Sushkov, S; Suter, H; Swain, J D; Szillási, Z; Tang, X W; Tarjan, P; Tauscher, L; Taylor, L; Tellili, B; Teyssier, D; Timmermans, C; Ting, Samuel C C; Ting, S M; Tonwar, S C; Tóth, J; Trowitzsch, G; Tully, C; Tung, K L; Ulbricht, J; Unger, M; Valente, E; Verkooijen, H; Van de Walle, R T; Vásquez, R; Vesztergombi, G; Vetlitskii, I; Viertel, G; Vivargent, M; Vlachos, S; Vodopyanov, I; Vogel, H; Vogt, H; Vorobev, I; Vorobyov, A A; Wadhwa, M; Wang, G; Wang, Q; Wang, X L; Wang, X W; Wang, Z M; Weber, M; Van Wijk, R; Wijnen, T A M; Wilkens, H; Wynhoff, S; Xia, L; Xu, Y P; Xu, Z Z; Yang, B Z; Yang, C G; Yang, H J; Yang, M; Yang, X F; Yao, Z G; Yeh, S C; Yu, Z Q; Zalite, A; Zalite, Yu; Zhang, C; Zhang, F; Zhang, J; Zhang, S; Zhang, Z P; Zhao, J; Zhou, S J; Zhu, G Y; Zhu, R Y; Zhu, Q Q; Zhuang, H L; Zichichi, A; Zimmermann, B; Zöller, M; Zwart, A N M

    2006-01-01

    Several experiments have reported observations on possible correlations between the flux of high energy muons and intense solar flares. If confirmed, these observations would have significant implications for acceleration processes in the heliosphere able to accelerate protons and other ions to energies of at least tens of GeV. The solar flare of the 14 July 2000 offers a unique opportunity for the L3+C experiment to search for a correlated enhancement in the flux of muons using the L3 precision muon spectrometer. Its capabilities for observing a directional excess in the flux of muons above 15 GeV (corresponding to primary proton energies above 40 GeV) are presented along with observations made on the 14th of July 2000. We report an excess which appeared at a time coincident with the peak increase of solar protons observed at lower energies. The probability that the excess is a background fluctuation is estimated to be 1%. No similar excess of the muon flux was observed up to 1.5 hours after the solar flare ...

  20. The Electronic Properties and L3 XANES of Au and Nano-Au

    International Nuclear Information System (INIS)

    Yiu, Y.M.; Zhang, P.; Sham, T.K.

    2004-01-01

    The electronic properties of Au crystal and nano Au have been investigated by theory and experiment. Molecularly capped nano-Au was synthesized using the two-phase method. Au nano-particles have been characterized by X-Ray Diffraction (XRD) and Transmission Electron Microscopy (TEM). They retain the fcc crystal structure. Their sizes have been determined to be in a range from 5.5 nm to 1.7 nm. The L3 X-ray Absorption Near Edge Structure (XANES) of nano-Au and Au foil have been recorded using synchrotron radiation, and examined by theoretical calculation based on the first principles. Both theory and experiment show that the nano-Au particles have essentially all the Au L3 XANES features of bulk Au in the near edge region with less pronounced resonance peaks. It is also shown that nano Au exhibits lower 4f binding energy than bulk Au in good agreement with quantum confined Au systems reported previously.

  1. Search for Higgs bosons using the L3 detector at LEP

    International Nuclear Information System (INIS)

    Kopp, A.

    2000-02-01

    This thesis is devoted to the search for Higgs bosons predicted by various theoretical models. By the introduction of these particles into the theory, the masses of bosons and fermions can be explained. The search is performed in experimentally related channels, which are characterised by charged leptons in the final state. The analysis uses data taken during the years 1996-1998 with the L3 detector at the large electron positron collider LEP. The observed candidates are consistent with the expectation from standard model background processes. Evidence for Higgs boson production could not be found. New mass limits were determined superseding previous mass limits established by L3 and other experiments. In the search for the Higgs boson of the standard model the channels hZ → b anti bl + l - (l = e,μ,τ) and hZ → τ + τ - q anti q were analysed at centre-of-mass energies between 183 and 189 GeV. A lower mass limit of m h > 87.5 GeV is derived at the 95% confidence level. (orig.)

  2. Priorities for Addressing Severe Accident and L3PSA in Radiation Environmental Report

    Energy Technology Data Exchange (ETDEWEB)

    Jang, M. S.; Kang, H. S.; Kim, S. R. [NESS, Daejeon (Korea, Republic of); Yang, Y. H.; Yoon, Y. I. [KHNP, Daejeon (Korea, Republic of)

    2016-05-15

    Domestic rules for the radiation environment impact assessment were enacted based on NUREG-0555, the guidance to the nuclear regulatory commission staff in implementing provisions of 10 CFR 51, 'environmental protection regulations for domestic licensing and related regulatory functions', related to NPPs. A revised document of NUREG-0555 was published in 2000 as NUREG-1555, Vol. 1 and 2. The related domestic rules would have made some revisions in accordance with NUREG-1555 in 2016. In this paper, we would introduce the new technical standards and review legal and technical issues on legislation. There are three legal and technical issues on revised legislation that includes severe accidents and L3PSA results in RER. First, it may need a regular and continuing education for the severe accident concept, probabilistic assessment method and conservative assumptions for severe accident, how to interpret the assessment results, the probability of a severe accident, SAMA and etc. to obtain the public understanding for severe accident. Second, it needs the development of strategy and technology not only to evaluate the risk of multi-unit accidents and failure case and the impacts of inter-unit shared systems and common events for the probabilistic assessment of severe accidents but also to solve many potential L3PSA challenges. Finally, the cost-beneficial SAMAs analysis would be added in radiation environmental impact and severe accident impact analysis.

  3. Quantitative autoradiographic distribution of L-[3H]glutamate-binding sites in rat central nervous system

    International Nuclear Information System (INIS)

    Greenamyre, J.T.; Young, A.B.; Penney, J.B.

    1984-01-01

    Quantitative autoradiography was used to determine the distribution of L-[3H]glutamate-binding sites in the rat central nervous system. Autoradiography was carried out in the presence of Cl- and Ca2+ ions. Scatchard plots and Hill coefficients of glutamate binding suggested that glutamate was interacting with a single population of sites having a K-D of about 300 nM and a capacity of 14.5 pmol/mg of protein. In displacement studies, ibotenate also appeared to bind to a single class of non-interacting sites with a KI of 28 microM. However, quisqualate displacement of [3H]glutamate binding revealed two well-resolved sites with KIS of 12 nM and 114 microM in striatum. These sites were unevenly distributed, representing different proportions of specific glutamate binding in different brain regions. The distribution of glutamate-binding sites correlated very well with the projection areas of putative glutamatergic pathways. This technique provides an extremely sensitive assay which can be used to gather detailed pharmacological and anatomical information about L-[3H]glutamate binding in the central nervous system

  4. Periodically poled silicon

    Science.gov (United States)

    Hon, Nick K.; Tsia, Kevin K.; Solli, Daniel R.; Khurgin, Jacob B.; Jalali, Bahram

    2010-02-01

    Bulk centrosymmetric silicon lacks second-order optical nonlinearity χ(2) - a foundational component of nonlinear optics. Here, we propose a new class of photonic device which enables χ(2) as well as quasi-phase matching based on periodic stress fields in silicon - periodically-poled silicon (PePSi). This concept adds the periodic poling capability to silicon photonics, and allows the excellent crystal quality and advanced manufacturing capabilities of silicon to be harnessed for devices based on χ(2)) effects. The concept can also be simply achieved by having periodic arrangement of stressed thin films along a silicon waveguide. As an example of the utility, we present simulations showing that mid-wave infrared radiation can be efficiently generated through difference frequency generation from near-infrared with a conversion efficiency of 50% based on χ(2) values measurements for strained silicon reported in the literature [Jacobson et al. Nature 441, 199 (2006)]. The use of PePSi for frequency conversion can also be extended to terahertz generation. With integrated piezoelectric material, dynamically control of χ(2)nonlinearity in PePSi waveguide may also be achieved. The successful realization of PePSi based devices depends on the strength of the stress induced χ(2) in silicon. Presently, there exists a significant discrepancy in the literature between the theoretical and experimentally measured values. We present a simple theoretical model that produces result consistent with prior theoretical works and use this model to identify possible reasons for this discrepancy.

  5. Nonlinear silicon photonics

    Science.gov (United States)

    Tsia, Kevin K.; Jalali, Bahram

    2010-05-01

    An intriguing optical property of silicon is that it exhibits a large third-order optical nonlinearity, with orders-ofmagnitude larger than that of silica glass in the telecommunication band. This allows efficient nonlinear optical interaction at relatively low power levels in a small footprint. Indeed, we have witnessed a stunning progress in harnessing the Raman and Kerr effects in silicon as the mechanisms for enabling chip-scale optical amplification, lasing, and wavelength conversion - functions that until recently were perceived to be beyond the reach of silicon. With all the continuous efforts developing novel techniques, nonlinear silicon photonics is expected to be able to reach even beyond the prior achievements. Instead of providing a comprehensive overview of this field, this manuscript highlights a number of new branches of nonlinear silicon photonics, which have not been fully recognized in the past. In particular, they are two-photon photovoltaic effect, mid-wave infrared (MWIR) silicon photonics, broadband Raman effects, inverse Raman scattering, and periodically-poled silicon (PePSi). These novel effects and techniques could create a new paradigm for silicon photonics and extend its utility beyond the traditionally anticipated applications.

  6. Nonlinear silicon photonics

    Science.gov (United States)

    Borghi, M.; Castellan, C.; Signorini, S.; Trenti, A.; Pavesi, L.

    2017-09-01

    Silicon photonics is a technology based on fabricating integrated optical circuits by using the same paradigms as the dominant electronics industry. After twenty years of fervid development, silicon photonics is entering the market with low cost, high performance and mass-manufacturable optical devices. Until now, most silicon photonic devices have been based on linear optical effects, despite the many phenomenologies associated with nonlinear optics in both bulk materials and integrated waveguides. Silicon and silicon-based materials have strong optical nonlinearities which are enhanced in integrated devices by the small cross-section of the high-index contrast silicon waveguides or photonic crystals. Here the photons are made to strongly interact with the medium where they propagate. This is the central argument of nonlinear silicon photonics. It is the aim of this review to describe the state-of-the-art in the field. Starting from the basic nonlinearities in a silicon waveguide or in optical resonator geometries, many phenomena and applications are described—including frequency generation, frequency conversion, frequency-comb generation, supercontinuum generation, soliton formation, temporal imaging and time lensing, Raman lasing, and comb spectroscopy. Emerging quantum photonics applications, such as entangled photon sources, heralded single-photon sources and integrated quantum photonic circuits are also addressed at the end of this review.

  7. Silicon germanium mask for deep silicon etching

    KAUST Repository

    Serry, Mohamed

    2014-07-29

    Polycrystalline silicon germanium (SiGe) can offer excellent etch selectivity to silicon during cryogenic deep reactive ion etching in an SF.sub.6/O.sub.2 plasma. Etch selectivity of over 800:1 (Si:SiGe) may be achieved at etch temperatures from -80 degrees Celsius to -140 degrees Celsius. High aspect ratio structures with high resolution may be patterned into Si substrates using SiGe as a hard mask layer for construction of microelectromechanical systems (MEMS) devices and semiconductor devices.

  8. Silicon germanium mask for deep silicon etching

    KAUST Repository

    Serry, Mohamed; Rubin, Andrew; Refaat, Mohamed; Sedky, Sherif; Abdo, Mohammad

    2014-01-01

    Polycrystalline silicon germanium (SiGe) can offer excellent etch selectivity to silicon during cryogenic deep reactive ion etching in an SF.sub.6/O.sub.2 plasma. Etch selectivity of over 800:1 (Si:SiGe) may be achieved at etch temperatures from -80 degrees Celsius to -140 degrees Celsius. High aspect ratio structures with high resolution may be patterned into Si substrates using SiGe as a hard mask layer for construction of microelectromechanical systems (MEMS) devices and semiconductor devices.

  9. Role of lipids in the transmission of the infective stage (L3) of Strongylus vulgaris (Nematoda: Strongylida).

    Science.gov (United States)

    Medica, D L; Sukhdeo, M V

    1997-10-01

    Infective larvae (L3) of Strongylus vulgaris have limited energy stores for host finding and for infection. For transmission to occur, the larvae must have sufficient energy to (a) migrate onto grass, where they are ingested by their equine host (host finding), and (b) penetrate into the host gut. This study is designed to test the hypothesis that L3 larvae of S. vulgaris partition their energy stores between locomotory activity (used in host finding) and infection activity (penetration). Chronic locomotory activity was stimulated by incubating S. vulgaris L3 larvae at a constant temperature (38 C). After 8 days of treatment, locomotory activity ceased (exhaustion). Exhausted L3 larvae had significantly decreased total lipid when compared to controls (P vulgaris L3 larvae are comprised of 9 fatty acids, some of which are depleted in exhausted worms (14:0, 14:1, 16:0, 16:1, 18:1, 18:2), whereas others (18:0, 20:4, 24:0) remain unchanged. These data suggest that specific fatty acids provide the energy source for locomotory activity in S. vulgaris. Exhausted L3 larvae were also less able to penetrate host cecal tissue in in vitro penetration assays when compared to controls (P vulgaris L3 larvae partition their energy stores between host-finding and infection activities. A comparison of lipid storage profiles in the L3 larvae of 4 nematode species with similar transmission strategies (S. vulgaris, Strongylus edentatus, Strongylus equinus, and Haemonchus contortus) revealed similarities in the fatty acid composition of these species. These data suggest a relationship between transmission patterns and energy storage strategies in the L3 larvae of nematode parasites of vertebrates.

  10. Combined Effect of the Cfr Methyltransferase and Ribosomal Protein L3 Mutations on Resistance to Ribosome-Targeting Antibiotics.

    Science.gov (United States)

    Pakula, Kevin K; Hansen, Lykke H; Vester, Birte

    2017-09-01

    Several groups of antibiotics inhibit bacterial growth by binding to bacterial ribosomes. Mutations in ribosomal protein L3 have been associated with resistance to linezolid and tiamulin, which both bind at the peptidyl transferase center in the ribosome. Resistance to these and other antibiotics also occurs through methylation of 23S rRNA at position A2503 by the methyltransferase Cfr. The mutations in L3 and the cfr gene have been found together in clinical isolates, raising the question of whether they have a combined effect on antibiotic resistance or growth. We transformed a plasmid-borne cfr gene into a uL3-depleted Escherichia coli strain containing either wild-type L3 or L3 with one of seven mutations, G147R, Q148F, N149S, N149D, N149R, Q150L, or T151P, expressed from plasmid-carried rplC genes. The L3 mutations are well tolerated, with small to moderate growth rate decreases. The presence of Cfr has a very minor influence on the growth rate. The resistance of the transformants to linezolid, tiamulin, florfenicol, and Synercid (a combination of quinupristin and dalfopristin [Q-D]) was measured by MIC assays. The resistance from Cfr was, in all cases, stronger than the effects of the L3 mutations, but various effects were obtained with the combinations of Cfr and L3 mutations ranging from a synergistic to an antagonistic effect. Linezolid and tiamulin susceptibility varied greatly among the L3 mutations, while no significant effects on florfenicol and Q-D susceptibility were seen. This study underscores the complex interplay between various resistance mechanisms and cross-resistance, even from antibiotics with overlapping binding sites. Copyright © 2017 American Society for Microbiology.

  11. Combined Effect of the Cfr Methyltransferase and Ribosomal Protein L3 Mutations on Resistance to Ribosome-Targeting Antibiotics

    DEFF Research Database (Denmark)

    Pakula, Kevin K; Hansen, Lykke H; Vester, Birte

    2017-01-01

    . The presence of Cfr has a very minor influence on the growth rate. The resistance of the transformants to linezolid, tiamulin, florfenicol, and Synercid (a combination of quinupristin and dalfopristin [Q-D]) was measured by MIC assays. The resistance from Cfr was, in all cases, stronger than the effects...... of the L3 mutations, but various effects were obtained with the combinations of Cfr and L3 mutations ranging from a synergistic to an antagonistic effect. Linezolid and tiamulin susceptibility varied greatly among the L3 mutations, while no significant effects on florfenicol and Q-D susceptibility were...

  12. Standard Model Higgs Boson with the L3 Experiment at LEP

    CERN Document Server

    Achard, P.; Aguilar-Benitez, M.; Alcaraz, J.; Alemanni, G.; Allaby, J.; Aloisio, A.; Alviggi, M.G.; Anderhub, H.; Andreev, Valery P.; Anselmo, F.; Arefev, A.; Azemoon, T.; Aziz, T.; Baarmand, M.; Bagnaia, P.; Bajo, A.; Baksay, G.; Baksay, L.; Baldew, S.V.; Banerjee, S.; Banerjee, Sw.; Barczyk, A.; Barillere, R.; Bartalini, P.; Basile, M.; Batalova, N.; Battiston, R.; Bay, A.; Becattini, F.; Becker, U.; Behner, F.; Bellucci, L.; Berbeco, R.; Berdugo, J.; Berges, P.; Bertucci, B.; Betev, B.L.; Biasini, M.; Biglietti, M.; Biland, A.; Blaising, J.J.; Blyth, S.C.; Bobbink, G.J.; Bohm, A.; Boldizsar, L.; Borgia, B.; Bourilkov, D.; Bourquin, M.; Braccini, S.; Branson, J.G.; Brochu, F.; Buijs, A.; Burger, J.D.; Burger, W.J.; Cai, X.D.; Capell, M.; Cara Romeo, G.; Carlino, G.; Cartacci, A.; Casaus, J.; Cavallari, F.; Cavallo, N.; Cecchi, C.; Cerrada, M.; Chamizo, M.; Chang, Y.H.; Chemarin, M.; Chen, A.; Chen, G.; Chen, G.M.; Chen, H.F.; Chen, H.S.; Chiefari, G.; Cifarelli, L.; Cindolo, F.; Clare, I.; Clare, R.; Coignet, G.; Colino, N.; Costantini, S.; De la Cruz, B.; Cucciarelli, S.; Dai, T.S.; Van Dalen, J.A.; De Asmundis, R.; Deglon, P.; Debreczeni, J.; Degre, A.; Deiters, K.; Della Volpe, D.; Delmeire, E.; Denes, P.; DeNotaristefani, F.; De Salvo, A.; Diemoz, M.; Dierckxsens, M.; Van Dierendonck, D.; Dionisi, C.; Dittmar, M.; Doria, A.; Dova, M.T.; Duchesneau, D.; Duinker, P.; Echenard, B.; Eline, A.; El Mamouni, H.; Engler, A.; Eppling, F.J.; Ewers, A.; Extermann, P.; Falagan, M.A.; Falciano, S.; Favara, A.; Fay, J.; Fedin, O.; Felcini, M.; Ferguson, T.; Fesefeldt, H.; Fiandrini, E.; Field, J.H.; Filthaut, F.; Fisher, P.H.; Fisher, W.; Fisk, I.; Forconi, G.; Freudenreich, K.; Furetta, C.; Galaktionov, Iouri; Ganguli, S.N.; Garcia-Abia, Pablo; Gataullin, M.; Gentile, S.; Giagu, S.; Gong, Z.F.; Grenier, Gerald Jean; Grimm, O.; Gruenewald, M.W.; Guida, M.; Van Gulik, R.; Gupta, V.K.; Gurtu, A.; Gutay, L.J.; Haas, D.; Hatzifotiadou, D.; Hebbeker, T.; Herve, Alain; Hirschfelder, J.; Hofer, H.; Holzner, G.; Hou, S.R.; Hu, Y.; Jin, B.N.; Jones, Lawrence W.; de Jong, P.; Josa-Mutuberria, I.; Kafer, D.; Kaur, M.; Kienzle-Focacci, M.N.; Kim, J.K.; Kirkby, Jasper; Kittel, W.; Klimentov, A.; Konig, A.C.; Kopal, M.; Koutsenko, V.; Kraber, M.; Kraemer, R.W.; Krenz, W.; Kruger, A.; Kunin, A.; Ladron De Guevara, P.; Laktineh, I.; Landi, G.; Lebeau, M.; Lebedev, A.; Lebrun, P.; Lecomte, P.; Lecoq, P.; Le Coultre, P.; Lee, H.J.; Le Goff, J.M.; Leiste, R.; Levtchenko, P.; Li, C.; Likhoded, S.; Lin, C.H.; Lin, W.T.; Linde, F.L.; Lista, L.; Liu, Z.A.; Lohmann, W.; Longo, E.; Lu, Y.S.; Lubelsmeyer, K.; Luci, C.; Luckey, David; Luminari, L.; Lustermann, W.; Ma, W.G.; Malgeri, L.; Malinin, A.; Mana, C.; Mangeol, D.; Mans, J.; Martin, J.P.; Marzano, F.; Mazumdar, K.; McNeil, R.R.; Mele, S.; Merola, L.; Meschini, M.; Metzger, W.J.; Mihul, A.; Milcent, H.; Mirabelli, G.; Mnich, J.; Mohanty, G.B.; Muanza, G.S.; Muijs, A.J.M.; Musicar, B.; Musy, M.; Nagy, S.; Napolitano, M.; Nessi-Tedaldi, F.; Newman, H.; Niessen, T.; Nisati, A.; Kluge, Hannelies; Ofierzynski, R.; Organtini, G.; Palomares, C.; Pandoulas, D.; Paolucci, P.; Paramatti, R.; Passaleva, G.; Patricelli, S.; Paul, Thomas Cantzon; Pauluzzi, M.; Paus, C.; Pauss, F.; Pedace, M.; Pensotti, S.; Perret-Gallix, D.; Petersen, B.; Piccolo, D.; Pierella, F.; Piroue, P.A.; Pistolesi, E.; Plyaskin, V.; Pohl, M.; Pojidaev, V.; Postema, H.; Pothier, J.; Prokofev, D.O.; Prokofiev, D.; Quartieri, J.; Rahal-Callot, G.; Rahaman, M.A.; Raics, P.; Raja, N.; Ramelli, R.; Rancoita, P.G.; Ranieri, R.; Raspereza, A.; Razis, P.; Ren, D.; Rescigno, M.; Reucroft, S.; Riemann, S.; Riles, Keith; Roe, B.P.; Romero, L.; Rosca, A.; Rosier-Lees, S.; Roth, Stefan; Rosenbleck, C.; Roux, B.; Rubio, J.A.; Ruggiero, G.; Rykaczewski, H.; Sakharov, A.; Saremi, S.; Sarkar, S.; Salicio, J.; Sanchez, E.; Sanders, M.P.; Schafer, C.; Schegelsky, V.; Schmidt-Kaerst, S.; Schmitz, D.; Schopper, H.; Schotanus, D.J.; Schwering, G.; Sciacca, C.; Servoli, L.; Shevchenko, S.; Shivarov, N.; Shoutko, V.; Shumilov, E.; Shvorob, A.; Siedenburg, T.; Son, D.; Spillantini, P.; Steuer, M.; Stickland, D.P.; Stoyanov, B.; Straessner, A.; Sudhakar, K.; Sultanov, G.; Sun, L.Z.; Sushkov, S.; Suter, H.; Swain, J.D.; Szillasi, Z.; Tang, X.W.; Tarjan, P.; Tauscher, L.; Taylor, L.; Tellili, B.; Teyssier, D.; Timmermans, Charles; Ting, Samuel C.C.; Ting, S.M.; Tonwar, S.C.; Toth, J.; Tully, C.; Tung, K.L.; Uchida, Y.; Ulbricht, J.; Valente, E.; Van de Walle, R.T.; Veszpremi, V.; Vesztergombi, G.; Vetlitsky, I.; Vicinanza, D.; Viertel, G.; Villa, S.; Vivargent, M.; Vlachos, S.; Vodopianov, I.; Vogel, H.; Vogt, H.; Vorobev, I.; Vorobyov, A.A.; Wadhwa, M.; Wallraff, W.; Wang, M.; Wang, X.L.; Wang, Z.M.; Weber, M.; Wienemann, P.; Wilkens, H.; Wu, S.X.; Wynhoff, S.; Xia, L.; Xu, Z.Z.; Yamamoto, J.; Yang, B.Z.; Yang, C.G.; Yang, H.J.; Yang, M.; Yeh, S.C.; Zalite, A.; Zalite, Yu.; Zhang, Z.P.; Zhao, J.; Zhu, G.Y.; Zhu, R.Y.; Zhuang, H.L.; Zichichi, A.; Zilizi, G.; Zimmermann, B.; Zoller, M.

    2001-01-01

    Final results of the search for the Standard Model Higgs boson are presented for the data collected by the L3 detector at LEP at centre-of-mass energies up to about 209 GeV. These data are compared with the expectations of Standard Model processes for Higgs boson masses up to 120 GeV. A lower limit on the mass of the Standard Model Higgs boson of 112.0 GeV is set at the 95% confidence level. The most significant high mass candidate is a Hnn bar event. It has a reconstructed Higgs mass of 115 GeV and it was recorded at Square root of s =206.4 GeV.

  13. l-3,4-Dihydroxyphenylalanine induces ptosis through a GPR143-independent mechanism in mice

    Directory of Open Access Journals (Sweden)

    Suguru Ueda

    2016-09-01

    Full Text Available Through its conversion to dopamine by aromatic l-amino acid decarboxylase (AADC, l-3,4-dihydroxyphenylalanine (l-DOPA replenishes depleted brain dopamine in Parkinson's disease patients. We recently identified GPR143 as a candidate receptor for l-DOPA. In this study, we investigated the behavioral actions of l-DOPA in wild type (wt and Gpr143-deficient mice. l-DOPA dose-dependently (10–100 mg/kg, i.p. induced ptosis under treatment with 3-hydroxybenzylhydrazine, a centrally acting AADC inhibitor. This effect was not mimicked by 3-O-methyldopa. l-DOPA-induced ptosis in Gpr143-deficient mice to a similar extent as in wt mice. These results suggest that l-DOPA induces ptosis in a GPR143-independent fashion in mice.

  14. Prototype study of a BGO electromagnetic calorimeter for the experiment L3

    International Nuclear Information System (INIS)

    El Mamouni, H.

    1986-01-01

    The L3 experiment detector at LEP is equipped with an original electromagnetic calorimeter. Such a calorimeter is made of a new calorimetric material, viz, Bismuth Germanate Oxyde (BGO). Furthermore, the scintillation light is read by means of large-area photodiodes. The latter choice for the photodiodes is dictated by the presence of a magnetic field. This thesis deals with the study in the 1-50 GeV energy range of the performances of a prototype for this new calorimeter. A great deal of efforts is devoted to ameliorate the energy resolution by improving the signal/noise ratio, the BGO crystals quality, the wrapping, the mechanical structure, etc... The goodness and the quality of the obtained results (concerning the linearity, the energy resolution and the position resolution) make it possible to reach in the near future the stage of the construction of a definitive calorimeter [fr

  15. 2016 CSSE L3 Milestone: Deliver In Situ to XTD End Users

    Energy Technology Data Exchange (ETDEWEB)

    Patchett, John M. [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Nouanesengsy, Boonthanome [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Fasel, Patricia Kroll [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Ahrens, James Paul [Los Alamos National Lab. (LANL), Los Alamos, NM (United States)

    2016-09-13

    This report summarizes the activities in FY16 toward satisfying the CSSE 2016 L3 milestone to deliver in situ to XTD end users of EAP codes. The Milestone was accomplished with ongoing work to ensure the capability is maintained and developed. Two XTD end users used the in situ capability in Rage. A production ParaView capability was created in the HPC and Desktop environment. Two new capabilities were added to ParaView in support of an EAP in situ workflow. We also worked with various support groups at the lab to deploy a production ParaView in the LANL environment for both desktop and HPC systems. . In addition, for this milestone, we moved two VTK based filters from research objects into the production ParaView code to support a variety of standard visualization pipelines for our EAP codes.

  16. Contribution to the elaboration and implementation of LEP-L3 second level microcoded Trigger

    International Nuclear Information System (INIS)

    Chollet, F.

    1988-03-01

    This thesis is devoted to the elaboration of the L3 second level trigger which is based on the dedicated programmable XOP processor. This system will reduce the trigger rate by a factor of ten and will ensure that the hardwired level-one processors function correctly. The present document describes all developments that L.A.P.P. is engaged in from the system design up to the complete experimental set up, especially: - The hardware development of the fast input memories as well as the FASTBUS interface unit which allows the microprocessor XOP to run as a performant FASTBUS Master, - the associated software developments, - the implementation of a VME test system dedicated to all control tasks [fr

  17. Effect of UBE2L3 genotype on regulation of the linear ubiquitin chain assembly complex in systemic lupus erythematosus.

    Science.gov (United States)

    Lewis, Myles; Vyse, Simon; Shields, Adrian; Boeltz, Sebastian; Gordon, Patrick; Spector, Timothy; Lehner, Paul; Walczak, Henning; Vyse, Timothy

    2015-02-26

    A single risk haplotype across UBE2L3 is strongly associated with systemic lupus erythematosus (SLE) and many other autoimmune diseases. UBE2L3 is an E2 ubiquitin-conjugating enzyme with specificity for RING-in-between-RING E3 ligases, including HOIL-1 and HOIP, components of the linear ubiquitin chain assembly complex (LUBAC), which has a pivotal role in inflammation, through crucial regulation of NF-κB. We aimed to determine whether UBE2L3 regulates LUBAC-mediated activation of NF-κB, and determine the effect of UBE2L3 genotype on NF-κB activation and B-cell differentiation. UBE2L3 genotype data from SLE genome-wide association studies was imputed by use of 1000 Genomes data. UBE2L3 function was studied in a HEK293-NF-κB reporter cell line with standard molecular biology techniques. p65 NF-κB translocation in ex-vivo B cells and monocytes from genotyped healthy individuals was quantified by imaging flow cytometry. B-cell subsets from healthy individuals and patients with SLE, stratified by UBE2L3 genotype, were determined by multicolour flow cytometry. rs140490, located at -270 base pairs of the UBE2L3 promoter, was identified as the most strongly associated single nucleotide polymorphism (p=8·6 × 10(-14), odds ratio 1·30, 95% CI 1·21-1·39). The rs140490 risk allele increased UBE2L3 expression in B cells and monocytes. Marked upregulation of NF-κB was observed with combined overexpression of UBE2L3 and LUBAC, but abolished by dominant-negative mutant UBE2L3 (C86S), or UBE2L3 silencing. The rs140490 genotype correlated with basal NF-κB activation in ex-vivo human B cells and monocytes, as well as NF-κB sensitivity to CD40 or tumour necrosis factor (TNF) stimulation. UBE2L3 expression was 3-4 times higher in circulating plasmablasts and plasma cells than in other B-cell subsets, with higher levels in patients with SLE than in controls. The rs140490 genotype correlated with increasing plasmablast and plasma cell differentiation in patients with SLE

  18. Process for making silicon

    Science.gov (United States)

    Levin, Harry (Inventor)

    1987-01-01

    A reactor apparatus (10) adapted for continuously producing molten, solar grade purity elemental silicon by thermal reaction of a suitable precursor gas, such as silane (SiH.sub.4), is disclosed. The reactor apparatus (10) includes an elongated reactor body (32) having graphite or carbon walls which are heated to a temperature exceeding the melting temperature of silicon. The precursor gas enters the reactor body (32) through an efficiently cooled inlet tube assembly (22) and a relatively thin carbon or graphite septum (44). The septum (44), being in contact on one side with the cooled inlet (22) and the heated interior of the reactor (32) on the other side, provides a sharp temperature gradient for the precursor gas entering the reactor (32) and renders the operation of the inlet tube assembly (22) substantially free of clogging. The precursor gas flows in the reactor (32) in a substantially smooth, substantially axial manner. Liquid silicon formed in the initial stages of the thermal reaction reacts with the graphite or carbon walls to provide a silicon carbide coating on the walls. The silicon carbide coated reactor is highly adapted for prolonged use for production of highly pure solar grade silicon. Liquid silicon (20) produced in the reactor apparatus (10) may be used directly in a Czochralski or other crystal shaping equipment.

  19. Hydrogen in amorphous silicon

    International Nuclear Information System (INIS)

    Peercy, P.S.

    1980-01-01

    The structural aspects of amorphous silicon and the role of hydrogen in this structure are reviewed with emphasis on ion implantation studies. In amorphous silicon produced by Si ion implantation of crystalline silicon, the material reconstructs into a metastable amorphous structure which has optical and electrical properties qualitatively similar to the corresponding properties in high-purity evaporated amorphous silicon. Hydrogen studies further indicate that these structures will accomodate less than or equal to 5 at.% hydrogen and this hydrogen is bonded predominantly in a monohydride (SiH 1 ) site. Larger hydrogen concentrations than this can be achieved under certain conditions, but the excess hydrogen may be attributed to defects and voids in the material. Similarly, glow discharge or sputter deposited amorphous silicon has more desirable electrical and optical properties when the material is prepared with low hydrogen concentration and monohydride bonding. Results of structural studies and hydrogen incorporation in amorphous silicon were discussed relative to the different models proposed for amorphous silicon

  20. Transformational silicon electronics

    KAUST Repository

    Rojas, Jhonathan Prieto

    2014-02-25

    In today\\'s traditional electronics such as in computers or in mobile phones, billions of high-performance, ultra-low-power devices are neatly integrated in extremely compact areas on rigid and brittle but low-cost bulk monocrystalline silicon (100) wafers. Ninety percent of global electronics are made up of silicon. Therefore, we have developed a generic low-cost regenerative batch fabrication process to transform such wafers full of devices into thin (5 μm), mechanically flexible, optically semitransparent silicon fabric with devices, then recycling the remaining wafer to generate multiple silicon fabric with chips and devices, ensuring low-cost and optimal utilization of the whole substrate. We show monocrystalline, amorphous, and polycrystalline silicon and silicon dioxide fabric, all from low-cost bulk silicon (100) wafers with the semiconductor industry\\'s most advanced high-κ/metal gate stack based high-performance, ultra-low-power capacitors, field effect transistors, energy harvesters, and storage to emphasize the effectiveness and versatility of this process to transform traditional electronics into flexible and semitransparent ones for multipurpose applications. © 2014 American Chemical Society.

  1. Silicon micromachined vibrating gyroscopes

    Science.gov (United States)

    Voss, Ralf

    1997-09-01

    This work gives an overview of silicon micromachined vibrating gyroscopes. Market perspectives and fields of application are pointed out. The advantage of using silicon micromachining is discussed and estimations of the desired performance, especially for automobiles are given. The general principle of vibrating gyroscopes is explained. Vibrating silicon gyroscopes can be divided into seven classes. for each class the characteristic principle is presented and examples are given. Finally a specific sensor, based on a tuning fork for automotive applications with a sensitivity of 250(mu) V/degrees is described in detail.

  2. Porous silicon gettering

    Energy Technology Data Exchange (ETDEWEB)

    Tsuo, Y.S.; Menna, P.; Pitts, J.R. [National Renewable Energy Lab., Golden, CO (United States)] [and others

    1996-05-01

    The authors have studied a novel extrinsic gettering method that uses the large surface areas produced by a porous-silicon etch as gettering sites. The annealing step of the gettering used a high-flux solar furnace. They found that a high density of photons during annealing enhanced the impurity diffusion to the gettering sites. The authors used metallurgical-grade Si (MG-Si) prepared by directional solidification casing as the starting material. They propose to use porous-silicon-gettered MG-Si as a low-cost epitaxial substrate for polycrystalline silicon thin-film growth.

  3. Silicon etch process

    International Nuclear Information System (INIS)

    Day, D.J.; White, J.C.

    1984-01-01

    A silicon etch process wherein an area of silicon crystal surface is passivated by radiation damage and non-planar structure produced by subsequent anisotropic etching. The surface may be passivated by exposure to an energetic particle flux - for example an ion beam from an arsenic, boron, phosphorus, silicon or hydrogen source, or an electron beam. Radiation damage may be used for pattern definition and/or as an etch stop. Ethylenediamine pyrocatechol or aqueous potassium hydroxide anisotropic etchants may be used. The radiation damage may be removed after etching by thermal annealing. (author)

  4. Silicon integrated circuit process

    International Nuclear Information System (INIS)

    Lee, Jong Duck

    1985-12-01

    This book introduces the process of silicon integrated circuit. It is composed of seven parts, which are oxidation process, diffusion process, ion implantation process such as ion implantation equipment, damage, annealing and influence on manufacture of integrated circuit and device, chemical vapor deposition process like silicon Epitaxy LPCVD and PECVD, photolithography process, including a sensitizer, spin, harden bake, reflection of light and problems related process, infrared light bake, wet-etch, dry etch, special etch and problems of etching, metal process like metal process like metal-silicon connection, aluminum process, credibility of aluminum and test process.

  5. Silicon integrated circuit process

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Jong Duck

    1985-12-15

    This book introduces the process of silicon integrated circuit. It is composed of seven parts, which are oxidation process, diffusion process, ion implantation process such as ion implantation equipment, damage, annealing and influence on manufacture of integrated circuit and device, chemical vapor deposition process like silicon Epitaxy LPCVD and PECVD, photolithography process, including a sensitizer, spin, harden bake, reflection of light and problems related process, infrared light bake, wet-etch, dry etch, special etch and problems of etching, metal process like metal process like metal-silicon connection, aluminum process, credibility of aluminum and test process.

  6. Silicon nanowire hybrid photovoltaics

    KAUST Repository

    Garnett, Erik C.; Peters, Craig; Brongersma, Mark; Cui, Yi; McGehee, Mike

    2010-01-01

    Silicon nanowire Schottky junction solar cells have been fabricated using n-type silicon nanowire arrays and a spin-coated conductive polymer (PEDOT). The polymer Schottky junction cells show superior surface passivation and open-circuit voltages compared to standard diffused junction cells with native oxide surfaces. External quantum efficiencies up to 88% were measured for these silicon nanowire/PEDOT solar cells further demonstrating excellent surface passivation. This process avoids high temperature processes which allows for low-cost substrates to be used. © 2010 IEEE.

  7. Silicon nanowire hybrid photovoltaics

    KAUST Repository

    Garnett, Erik C.

    2010-06-01

    Silicon nanowire Schottky junction solar cells have been fabricated using n-type silicon nanowire arrays and a spin-coated conductive polymer (PEDOT). The polymer Schottky junction cells show superior surface passivation and open-circuit voltages compared to standard diffused junction cells with native oxide surfaces. External quantum efficiencies up to 88% were measured for these silicon nanowire/PEDOT solar cells further demonstrating excellent surface passivation. This process avoids high temperature processes which allows for low-cost substrates to be used. © 2010 IEEE.

  8. MODIS/Terra Aerosol Cloud Water Vapor Ozone Monthly L3 Global 1Deg CMG V006

    Data.gov (United States)

    National Aeronautics and Space Administration — MODIS/Terra Aerosol Cloud Water Vapor Ozone Monthly L3 Global 1Deg CMG (MOD08_M3). MODIS was launched aboard the Terra satellite on December 18, 1999 (10:30 am...

  9. MODIS/Aqua Land Surface Temperature/3-Band Emissivity Daily L3 Global 1km SIN Grid Day V006

    Data.gov (United States)

    National Aeronautics and Space Administration — MODIS/Aqua Land Surface Temperature/3-Band Emissivity Daily L3 Global 1km SIN Grid Day (MYD21A1D.006). A new suite of MODIS Land Surface Temperature (LST) and...

  10. MODIS/Terra Land Surface Temperature/3-Band Emissivity Daily L3 Global 1km SIN Grid Night V006

    Data.gov (United States)

    National Aeronautics and Space Administration — MODIS/Terra Land Surface Temperature/3-Band Emissivity Daily L3 Global 1km SIN Grid Night (MOD21A1N.006). A new suite of MODIS Land Surface Temperature (LST) and...

  11. MODIS/Aqua Land Surface Temperature/3-Band Emissivity Daily L3 Global 1km SIN Grid Night V006

    Data.gov (United States)

    National Aeronautics and Space Administration — MODIS/Aqua Land Surface Temperature/3-Band Emissivity Daily L3 Global 1km SIN Grid Night (MYD21A1N.006). A new suite of MODIS Land Surface Temperature (LST) and...

  12. MODIS/Aqua Land Surface Temperature/Emissivity 8-Day L3 Global 0.05Deg CMG V041

    Data.gov (United States)

    National Aeronautics and Space Administration — The MYD11C2.041 dataset was decommissioned as of March 1, 2018. Users are encouraged to use Version 6 of MODIS/Aqua Land Surface Temperature and Emissivity Daily L3...

  13. Microcell-mediated chromosome transfer identifies EPB41L3 as a functional suppressor of epithelial ovarian cancers

    DEFF Research Database (Denmark)

    Dafou, Dimitra; Grun, Barbara; Sinclair, John

    2010-01-01

    lines. Using immunohistochemistry, 66% of 794 invasive ovarian tumors showed no EPB41L3 expression compared with only 24% of benign ovarian tumors and 0% of normal ovarian epithelial tissues. EPB41L3 was extensively methylated in ovarian cancer cell lines and primary ovarian tumors compared with normal...... (erythrocyte membrane protein band 4.1-like 3, alternative names DAL-1 and 4.1B) was a candidate ovarian cancer-suppressor gene. Immunoblot analysis showed that EPB41L3 was activated in TOV21G(+18) hybrids, expressed in normal ovarian epithelial cell lines, but was absent in 15 (78%) of 19 ovarian cancer cell...... tissues (P = .00004), suggesting this may be the mechanism of gene inactivation in ovarian cancers. Constitutive reexpression of EPB41L3 in a three-dimensional multicellular spheroid model of ovarian cancer caused significant growth suppression and induced apoptosis. Transmission and scanning electron...

  14. MODIS/Terra Land Surface Temperature/3-Band Emissivity Daily L3 Global 1km SIN Grid Day V006

    Data.gov (United States)

    National Aeronautics and Space Administration — MODIS/Terra Land Surface Temperature/3-Band Emissivity Daily L3 Global 1km SIN Grid Day (MOD21A1D.006). A new suite of MODIS Land Surface Temperature (LST) and...

  15. Joining elements of silicon carbide

    International Nuclear Information System (INIS)

    Olson, B.A.

    1979-01-01

    A method of joining together at least two silicon carbide elements (e.g.in forming a heat exchanger) is described, comprising subjecting to sufficiently non-oxidizing atmosphere and sufficiently high temperature, material placed in space between the elements. The material consists of silicon carbide particles, carbon and/or a precursor of carbon, and silicon, such that it forms a joint joining together at least two silicon carbide elements. At least one of the elements may contain silicon. (author)

  16. Replacing Alpha-Fetoprotein With Alpha-Fetoprotein-L3 Increases the Sensitivity of Prenatal Screening for Trisomy 21.

    Science.gov (United States)

    Huai, Lei; Leng, Jianhang; Ma, Shenglin; Huang, Fang; Shen, Junya; Ding, Yu

    This study aimed to investigate the serum concentration of alpha-fetoprotein (AFP)-L3 in midterm pregnancies and its potential application in prenatal trisomy screening. The serum samples from 27 women with trisomy 21 fetuses and 800 women with normal fetuses were examined to measure the concentrations of AFP, AFP-L3, human chorionic gonadotropin (hCG), unconjugated estriol (uE3), and inhibin-A. The screening results of various tests consisting of these markers were analyzed. In normal pregnancies within 15-20 weeks of gestation, the medians of serum AFP-L3 were 4.63, 5.70, 5.78, 6.58, 7.03, and 7.25 pg/mL. The median of AFP-L3 MoM in the trisomy 21 group was 0.46, which was significantly lower than the value of 1 in the normal group (P < 0.05). When using a cutoff value of 1/270, the sensitivity of the triple marker test (AFP, hCG, uE3) was improved from 74% to 81% by replacing AFP with AFP-L3, with the false-positive rate slightly increased from 5.4% to 6.8%. Similarly, the sensitivity of the quad marker test (AFP, hCG, uE3, inhibin-A) was improved from 81% to 89% by replacing AFP with AFP-L3, with the false-positive rate slightly increased from 4.6% to 5.6%. Serum AFP-L3 concentration increases along with more weeks of gestation in the midterm pregnancies. Trisomy 21 screening tests with AFP replaced by AFP-L3 have higher sensitivities at the expense of slightly increased false-positive rates. This improvement in screening may help to better prepare the parents and caregivers for the special needs of newborns with trisomy 21.

  17. SO(2 ell + 1) contains ? contains SO/sub L/(3) in group chains for L-S coupling

    International Nuclear Information System (INIS)

    Wu, Z.Y.; Sun, C.P.; Zhang, L.; Li, B.F.

    1986-01-01

    Racah pointed out in his 1949 article that there exists a proper subgroup of SO(7) which properly contains SO/sub L/(3) in group chains for L-S coupling. This paper investigates whether such a proper subgroup exists for SO(2l + 1) which contains SO/sub L/(3) for an arbitrary l and concludes that this subgroup exists only for the case in which l is equal to 3. 4 references

  18. Photoluminescence and electrical properties of silicon oxide and silicon nitride superlattices containing silicon nanocrystals

    International Nuclear Information System (INIS)

    Shuleiko, D V; Ilin, A S

    2016-01-01

    Photoluminescence and electrical properties of superlattices with thin (1 to 5 nm) alternating silicon-rich silicon oxide or silicon-rich silicon nitride, and silicon oxide or silicon nitride layers containing silicon nanocrystals prepared by plasma-enhanced chemical vapor deposition with subsequent annealing were investigated. The entirely silicon oxide based superlattices demonstrated photoluminescence peak shift due to quantum confinement effect. Electrical measurements showed the hysteresis effect in the vicinity of zero voltage due to structural features of the superlattices from SiOa 93 /Si 3 N 4 and SiN 0 . 8 /Si 3 N 4 layers. The entirely silicon nitride based samples demonstrated resistive switching effect, comprising an abrupt conductivity change at about 5 to 6 V with current-voltage characteristic hysteresis. The samples also demonstrated efficient photoluminescence with maximum at ∼1.4 eV, due to exiton recombination in silicon nanocrystals. (paper)

  19. Advances in silicon nanophotonics

    DEFF Research Database (Denmark)

    Hvam, Jørn Märcher; Pu, Minhao

    Silicon has long been established as an ideal material for passive integrated optical circuitry due to its high refractive index, with corresponding strong optical confinement ability, and its low-cost CMOS-compatible manufacturability. However, the inversion symmetry of the silicon crystal lattice.......g. in high-bit-rate optical communication circuits and networks, it is vital that the nonlinear optical effects of silicon are being strongly enhanced. This can among others be achieved in photonic-crystal slow-light waveguides and in nano-engineered photonic-wires (Fig. 1). In this talk I shall present some...... recent advances in this direction. The efficient coupling of light between optical fibers and the planar silicon devices and circuits is of crucial importance. Both end-coupling (Fig. 1) and grating-coupling solutions will be discussed along with polarization issues. A new scheme for a hybrid III...

  20. Integrated silicon optoelectronics

    CERN Document Server

    Zimmermann, Horst

    2000-01-01

    'Integrated Silicon Optoelectronics'assembles optoelectronics and microelectronics The book concentrates on silicon as the major basis of modern semiconductor devices and circuits Starting from the basics of optical emission and absorption and from the device physics of photodetectors, the aspects of the integration of photodetectors in modern bipolar, CMOS, and BiCMOS technologies are discussed Detailed descriptions of fabrication technologies and applications of optoelectronic integrated circuits are included The book, furthermore, contains a review of the state of research on eagerly expected silicon light emitters In order to cover the topic of the book comprehensively, integrated waveguides, gratings, and optoelectronic power devices are included in addition Numerous elaborate illustrations promote an easy comprehension 'Integrated Silicon Optoelectronics'will be of value to engineers, physicists, and scientists in industry and at universities The book is also recommendable for graduate students speciali...

  1. Silicon microfabricated beam expander

    International Nuclear Information System (INIS)

    Othman, A.; Ibrahim, M. N.; Hamzah, I. H.; Sulaiman, A. A.; Ain, M. F.

    2015-01-01

    The feasibility design and development methods of silicon microfabricated beam expander are described. Silicon bulk micromachining fabrication technology is used in producing features of the structure. A high-precision complex 3-D shape of the expander can be formed by exploiting the predictable anisotropic wet etching characteristics of single-crystal silicon in aqueous Potassium-Hydroxide (KOH) solution. The beam-expander consist of two elements, a micromachined silicon reflector chamber and micro-Fresnel zone plate. The micro-Fresnel element is patterned using lithographic methods. The reflector chamber element has a depth of 40 µm, a diameter of 15 mm and gold-coated surfaces. The impact on the depth, diameter of the chamber and absorption for improved performance are discussed

  2. Silicon microfabricated beam expander

    Science.gov (United States)

    Othman, A.; Ibrahim, M. N.; Hamzah, I. H.; Sulaiman, A. A.; Ain, M. F.

    2015-03-01

    The feasibility design and development methods of silicon microfabricated beam expander are described. Silicon bulk micromachining fabrication technology is used in producing features of the structure. A high-precision complex 3-D shape of the expander can be formed by exploiting the predictable anisotropic wet etching characteristics of single-crystal silicon in aqueous Potassium-Hydroxide (KOH) solution. The beam-expander consist of two elements, a micromachined silicon reflector chamber and micro-Fresnel zone plate. The micro-Fresnel element is patterned using lithographic methods. The reflector chamber element has a depth of 40 µm, a diameter of 15 mm and gold-coated surfaces. The impact on the depth, diameter of the chamber and absorption for improved performance are discussed.

  3. Silicon microfabricated beam expander

    Energy Technology Data Exchange (ETDEWEB)

    Othman, A., E-mail: aliman@ppinang.uitm.edu.my; Ibrahim, M. N.; Hamzah, I. H.; Sulaiman, A. A. [Faculty of Electrical Engineering, Universiti Teknologi MARA Malaysia, 40450, Shah Alam, Selangor (Malaysia); Ain, M. F. [School of Electrical and Electronic Engineering, Engineering Campus, Universiti Sains Malaysia, Seri Ampangan, 14300,Nibong Tebal, Pulau Pinang (Malaysia)

    2015-03-30

    The feasibility design and development methods of silicon microfabricated beam expander are described. Silicon bulk micromachining fabrication technology is used in producing features of the structure. A high-precision complex 3-D shape of the expander can be formed by exploiting the predictable anisotropic wet etching characteristics of single-crystal silicon in aqueous Potassium-Hydroxide (KOH) solution. The beam-expander consist of two elements, a micromachined silicon reflector chamber and micro-Fresnel zone plate. The micro-Fresnel element is patterned using lithographic methods. The reflector chamber element has a depth of 40 µm, a diameter of 15 mm and gold-coated surfaces. The impact on the depth, diameter of the chamber and absorption for improved performance are discussed.

  4. Porous Silicon Nanowires

    Science.gov (United States)

    Qu, Yongquan; Zhou, Hailong; Duan, Xiangfeng

    2011-01-01

    In this minreview, we summarize recent progress in the synthesis, properties and applications of a new type of one-dimensional nanostructures — single crystalline porous silicon nanowires. The growth of porous silicon nanowires starting from both p- and n-type Si wafers with a variety of dopant concentrations can be achieved through either one-step or two-step reactions. The mechanistic studies indicate the dopant concentration of Si wafers, oxidizer concentration, etching time and temperature can affect the morphology of the as-etched silicon nanowires. The porous silicon nanowires are both optically and electronically active and have been explored for potential applications in diverse areas including photocatalysis, lithium ion battery, gas sensor and drug delivery. PMID:21869999

  5. Nanostructured silicon for thermoelectric

    Science.gov (United States)

    Stranz, A.; Kähler, J.; Waag, A.; Peiner, E.

    2011-06-01

    Thermoelectric modules convert thermal energy into electrical energy and vice versa. At present bismuth telluride is the most widely commercial used material for thermoelectric energy conversion. There are many applications where bismuth telluride modules are installed, mainly for refrigeration. However, bismuth telluride as material for energy generation in large scale has some disadvantages. Its availability is limited, it is hot stable at higher temperatures (>250°C) and manufacturing cost is relatively high. An alternative material for energy conversion in the future could be silicon. The technological processing of silicon is well advanced due to the rapid development of microelectronics in recent years. Silicon is largely available and environmentally friendly. The operating temperature of silicon thermoelectric generators can be much higher than of bismuth telluride. Today silicon is rarely used as a thermoelectric material because of its high thermal conductivity. In order to use silicon as an efficient thermoelectric material, it is necessary to reduce its thermal conductivity, while maintaining high electrical conductivity and high Seebeck coefficient. This can be done by nanostructuring into arrays of pillars. Fabrication of silicon pillars using ICP-cryogenic dry etching (Inductive Coupled Plasma) will be described. Their uniform height of the pillars allows simultaneous connecting of all pillars of an array. The pillars have diameters down to 180 nm and their height was selected between 1 micron and 10 microns. Measurement of electrical resistance of single silicon pillars will be presented which is done in a scanning electron microscope (SEM) equipped with nanomanipulators. Furthermore, measurement of thermal conductivity of single pillars with different diameters using the 3ω method will be shown.

  6. Study on Silicon detectors

    International Nuclear Information System (INIS)

    Gervino, G.; Boero, M.; Manfredotti, C.; Icardi, M.; Gabutti, A.; Bagnolatti, E.; Monticone, E.

    1990-01-01

    Prototypes of Silicon microstrip detectors and Silicon large area detectors (3x2 cm 2 ), realized directly by our group, either by ion implantation or by diffusion are presented. The physical detector characteristics and their performances determined by exposing them to different radioactive sources and the results of extensive tests on passivation, where new technological ways have been investigated, are discussed. The calculation of the different terms contributing to the total dark current is reported

  7. Silicon carbide optics for space and ground based astronomical telescopes

    Science.gov (United States)

    Robichaud, Joseph; Sampath, Deepak; Wainer, Chris; Schwartz, Jay; Peton, Craig; Mix, Steve; Heller, Court

    2012-09-01

    Silicon Carbide (SiC) optical materials are being applied widely for both space based and ground based optical telescopes. The material provides a superior weight to stiffness ratio, which is an important metric for the design and fabrication of lightweight space telescopes. The material also has superior thermal properties with a low coefficient of thermal expansion, and a high thermal conductivity. The thermal properties advantages are important for both space based and ground based systems, which typically need to operate under stressing thermal conditions. The paper will review L-3 Integrated Optical Systems - SSG’s (L-3 SSG) work in developing SiC optics and SiC optical systems for astronomical observing systems. L-3 SSG has been fielding SiC optical components and systems for over 25 years. Space systems described will emphasize the recently launched Long Range Reconnaissance Imager (LORRI) developed for JHU-APL and NASA-GSFC. Review of ground based applications of SiC will include supporting L-3 IOS-Brashear’s current contract to provide the 0.65 meter diameter, aspheric SiC secondary mirror for the Advanced Technology Solar Telescope (ATST).

  8. Subwavelength silicon photonics

    International Nuclear Information System (INIS)

    Cheben, P.; Bock, P.J.; Schmid, J.H.; Lapointe, J.; Janz, S.; Xu, D.-X.; Densmore, A.; Delage, A.; Lamontagne, B.; Florjanczyk, M.; Ma, R.

    2011-01-01

    With the goal of developing photonic components that are compatible with silicon microelectronic integrated circuits, silicon photonics has been the subject of intense research activity. Silicon is an excellent material for confining and manipulating light at the submicrometer scale. Silicon optoelectronic integrated devices have the potential to be miniaturized and mass-produced at affordable cost for many applications, including telecommunications, optical interconnects, medical screening, and biological and chemical sensing. We review recent advances in silicon photonics research at the National Research Council Canada. A new type of optical waveguide is presented, exploiting subwavelength grating (SWG) effect. We demonstrate subwavelength grating waveguides made of silicon, including practical components operating at telecom wavelengths: input couplers, waveguide crossings and spectrometer chips. SWG technique avoids loss and wavelength resonances due to diffraction effects and allows for single-mode operation with direct control of the mode confinement by changing the refractive index of a waveguide core over a range as broad as 1.6 - 3.5 simply by lithographic patterning. The light can be launched to these waveguides with a coupling loss as small as 0.5 dB and with minimal wavelength dependence, using coupling structures similar to that shown in Fig. 1. The subwavelength grating waveguides can cross each other with minimal loss and negligible crosstalk which allows massive photonic circuit connectivity to overcome the limits of electrical interconnects. These results suggest that the SWG waveguides could become key elements for future integrated photonic circuits. (authors)

  9. Silicon microphotonic waveguides

    International Nuclear Information System (INIS)

    Ta'eed, V.; Steel, M.J.; Grillet, C.; Eggleton, B.; Du, J.; Glasscock, J.; Savvides, N.

    2004-01-01

    Full text: Silicon microphotonic devices have been drawing increasing attention in the past few years. The high index-difference between silicon and its oxide (Δn = 2) suggests a potential for high-density integration of optical functions on to a photonic chip. Additionally, it has been shown that silicon exhibits strong Raman nonlinearity, a necessary property as light interaction can occur only by means of nonlinearities in the propagation medium. The small dimensions of silicon waveguides require the design of efficient tapers to couple light to them. We have used the beam propagation method (RSoft BeamPROP) to understand the principles and design of an inverse-taper mode-converter as implemented in several recent papers. We report on progress in the design and fabrication of silicon-based waveguides. Preliminary work has been conducted by patterning silicon-on-insulator (SOI) wafers using optical lithography and reactive ion etching. Thus far, only rib waveguides have been designed, as single-mode ridge-waveguides are beyond the capabilities of conventional optical lithography. We have recently moved to electron beam lithography as the higher resolutions permitted will provide the flexibility to begin fabricating sub-micron waveguides

  10. Silicon photonic crystal nanostructures for refractive index sensing

    DEFF Research Database (Denmark)

    Dorfner, Dominic; Hürlimann, T.; Zabel, T.

    2008-01-01

    The authors present the fabrication and optical investigation of Silicon on Insulator photonic crystal drop-filters for use as refractive index sensors. Two types of defect nanocavities (L3 and H1-r) are embedded between two W1 photonic crystal waveguides to evanescently route light at the cavity...... mode frequency between input and output waveguides. Optical characterization of the structures in air and various liquids demonstrate detectivities in excess of n=n = 0:018 and n=n = 0:006 for the H1-r and L3 cavities, respectively. The measured cavity-frequencies and detector refractive index...... responsivities are in good agreement with simulations, demonstrating that the method provides a background free transducer signal with frequency selective addressing of a specic area of the sensor chip....

  11. Amorphous silicon crystalline silicon heterojunction solar cells

    CERN Document Server

    Fahrner, Wolfgang Rainer

    2013-01-01

    Amorphous Silicon/Crystalline Silicon Solar Cells deals with some typical properties of heterojunction solar cells, such as their history, the properties and the challenges of the cells, some important measurement tools, some simulation programs and a brief survey of the state of the art, aiming to provide an initial framework in this field and serve as a ready reference for all those interested in the subject. This book helps to "fill in the blanks" on heterojunction solar cells. Readers will receive a comprehensive overview of the principles, structures, processing techniques and the current developmental states of the devices. Prof. Dr. Wolfgang R. Fahrner is a professor at the University of Hagen, Germany and Nanchang University, China.

  12. Oxygen defect processes in silicon and silicon germanium

    KAUST Repository

    Chroneos, A.; Sgourou, E. N.; Londos, C. A.; Schwingenschlö gl, Udo

    2015-01-01

    Silicon and silicon germanium are the archetypical elemental and alloy semiconductor materials for nanoelectronic, sensor, and photovoltaic applications. The investigation of radiation induced defects involving oxygen, carbon, and intrinsic defects is important for the improvement of devices as these defects can have a deleterious impact on the properties of silicon and silicon germanium. In the present review, we mainly focus on oxygen-related defects and the impact of isovalent doping on their properties in silicon and silicon germanium. The efficacy of the isovalent doping strategies to constrain the oxygen-related defects is discussed in view of recent infrared spectroscopy and density functional theory studies.

  13. Colloidal characterization of ultrafine silicon carbide and silicon nitride powders

    Science.gov (United States)

    Whitman, Pamela K.; Feke, Donald L.

    1986-01-01

    The effects of various powder treatment strategies on the colloid chemistry of aqueous dispersions of silicon carbide and silicon nitride are examined using a surface titration methodology. Pretreatments are used to differentiate between the true surface chemistry of the powders and artifacts resulting from exposure history. Silicon nitride powders require more extensive pretreatment to reveal consistent surface chemistry than do silicon carbide powders. As measured by titration, the degree of proton adsorption from the suspending fluid by pretreated silicon nitride and silicon carbide powders can both be made similar to that of silica.

  14. Oxygen defect processes in silicon and silicon germanium

    KAUST Repository

    Chroneos, A.

    2015-06-18

    Silicon and silicon germanium are the archetypical elemental and alloy semiconductor materials for nanoelectronic, sensor, and photovoltaic applications. The investigation of radiation induced defects involving oxygen, carbon, and intrinsic defects is important for the improvement of devices as these defects can have a deleterious impact on the properties of silicon and silicon germanium. In the present review, we mainly focus on oxygen-related defects and the impact of isovalent doping on their properties in silicon and silicon germanium. The efficacy of the isovalent doping strategies to constrain the oxygen-related defects is discussed in view of recent infrared spectroscopy and density functional theory studies.

  15. Ubiquitin Carboxy-Terminal HydrolaseL3 Correlates with Human Sperm Count, Motility and Fertilization.

    Science.gov (United States)

    Wang, Meijiao; Yu, Tinghe; Hu, Lina; Cheng, Zhi; Li, Min

    2016-01-01

    Ubiquitin C-terminal hydrolase L3 (UCHL3) belongs to the group of deubiquitinating enzymes and plays a part in apoptosis of germ cells and the differentiation of spermatocytes into spermatids. However, the exact role of UCHL3 in human spermatogenesis and sperm function remains unknown. Here we examined the level and activity of UCHL3 in spermatozoa from men with asthenozoospermia (A), oligoasthenozoospermia (OA) or normozoospermia (N). Immunofluorescence indicated that UCHL3 was mainly localized in the acrosome and throughout the flagella, and western blotting revealed a lower level in A or OA compared with N (p sperm count, concentration and motility. The UCHL3 level was positively correlated with the normal fertilization rate (FR) and percentage of embryos suitable for transfer/cryopreservation of in vitro fertilization (IVF). The UCHL3 activity was also positively correlated with FR, the percentage of embryos suitable for transfer/cryopreservation and high-quality embryos rate of IVF. Aforementioned correlations were not manifested in intra-cytoplasmic sperm injection (ICSI). These findings suggest that UCHL3 may play a role in male infertility.

  16. Low-energy photon physics in the frame on the LEP-L3 experiment

    International Nuclear Information System (INIS)

    Boutigny, D.

    1986-04-01

    The apparatus of the experiment L3 which will be installed at the LEP is mainly optimized for detecting leptons and photons with more particularly an electromagnetic BGO calorimeter, muon chambers and a high-precision central chamber. Then, one presents a method allowing to point out the reaction e + e - → νantiνγ. The cross section is calculated for different hypothesis concerning the number of light neutrino generations and for several possible configurations of apparatus. The background noise has been estimated for the reactions e + e - → μ + μ - γ and e + e - → γγγ. This thesis deals also with the 1P states of the toponium; a simulation of the signal and the background noise associated to the radiative cascade is developed. Finally, one describes the tests carried out on a matrice of one hundred crystals of BGO to estimate its energy resolution, important parameter for the neutrino-counting reaction, or the search of the 1 3 P states of the toponium [fr

  17. Measurement of the tau lifetime and leptonic branching ratios in L3

    International Nuclear Information System (INIS)

    Garcia-Abia, P.

    2001-01-01

    Using data collected with the L3 detector near the Z resonance corresponding to an integrated luminosity of 150 pb -1 the lifetime of the tau lepton is measured to be τ τ = 293.2 ± 2.0(stat.) ± 1.5(sys.) fs, and the branching ratios of the tau lepton into electron and muon are measured to be B(τ → eν-bar e ν τ ) = (17.806 ± 0.104 (stat.)±0.076(sys.))% and B(τ → μν-bar μ ν τ ) = (17.342 ± 0.110 (stat.)±0.067(sys.))%, respectively. From these results the ratio of the charged current coupling constants g μ /g e , g τ /g e and g τ /g μ are determined and support the lepton universality hypothesis. The Fermi-constant and the coupling constant of the strong interaction at the tau mass are obtained from these measurements

  18. Small bowel entrapment and ureteropelvic junction disruption associated with L3 Chance fracture-dislocation

    Science.gov (United States)

    Pesenti, Sebastien; Blondel, Benjamin; Faure, Alice; Peltier, Emilie; Launay, Franck; Jouve, Jean-Luc

    2016-01-01

    Paediatric Chance fracture are rare lesions but often associated with abdominal injuries. We herein present the case of a seven years old patient who sustained an entrapment of small bowel and an ureteropelvic disruption associated with a Chance fracture and spine dislocation following a traffic accident. Initial X-rays and computed tomographic (CT) scan showed a Chance fracture with dislocation of L3 vertebra, with an incarceration of a small bowel loop in the spinal canal and a complete section of the left lumbar ureter. Paraplegia was noticed on the initial neurological examination. A posterior L2-L4 osteosynthesis was performed firstly. In a second time she underwent a sus umbilical laparotomy to release the incarcerated jejunum loop in the spinal canal. An end-to-end anastomosis was performed on a JJ probe to suture the left injured ureter. One month after the traumatism, she started to complain of severe headaches related to a leakage of cerebrospinalis fluid. Three months after the traumatism there was a clear regression of the leakage. One year after the trauma, an anterior intervertebral fusion was done. At final follow-up, no neurologic recovery was noticed. In case of Chance fracture, all physicians should think about abdominal injuries even if the patient is asymptomatic. Initial abdominal CT scan and magnetic resonance imaging provide in such case crucial info for management of the spine and the associated lesions. PMID:27672641

  19. Valence determination of rare earth elements in lanthanide silicates by L 3-XANES spectroscopy

    International Nuclear Information System (INIS)

    Kravtsova, Antonina N; Guda, Alexander A; Soldatov, Alexander V; Goettlicher, Joerg; Taroev, Vladimir K; Suvorova, Lyudmila F; Tauson, Vladimir L; Kashaev, Anvar A

    2016-01-01

    Lanthanide silicates have been hydrothermally synthesized using Cu and Ni containers. Chemical formulae of the synthesized compounds correspond to K 3 Eu[Si 6 O 15 ] 2H 2 O, HK 6 Eu[Si 10 O 25 ], K 7 Sm 3 [Si 12 O 32 ], K 2 Sm[AlSi 4 O 12 ] 0.375H 2 O, K 4 Yb 2 [Si 8 O 21 ], K 4 Ce 2 [Al 2 Si 8 O 24 ]. The oxidation state of lanthanides (Eu, Ce, Tb, Sm, Yb) in these silicates has been determined using XANES spectroscopy at the Eu, Ce, Tb, Sm, Yb, L 3 - edges. The experimental XANES spectra were recorded using the synchrotron radiation source ANKA (Karlsruhe Institute of Technology) and the X-ray laboratory spectrometer Rigaku R- XAS. By comparing the absorption edge energies and white line intensities of the silicates with the ones of reference spectra the oxidation state of lanthanides Eu, Ce, Tb, Sm, Yb has been found to be equal to +3 in all investigated silicates except of the Ce-containing silicate from the run in Cu container where the cerium oxidation state ranges from +3 (Ce in silicate apatite and in a KCe silicate with Si 12 O 32 layers) to +4 (starting CeO 2 or oxidized Ce 2 O 3 ). (paper)

  20. Complete suppression of Pfirsch-Schlueter current in a toroidal l=3 stellarator

    International Nuclear Information System (INIS)

    Sato, Yasuhiko; Wakatani, Masahiro; Yokoyama, Masayuki; Pustovitov, V.D.

    1999-10-01

    Pfirsch-Schlueter (P-S) current is an inherent property of a finite pressure toroidal equilibrium of tokamak and stellarator. However, it was pointed out recently (V.D. Pustovitov, Nuclear Fusion 36 (1996) 583) that the P-S current would be suppressed completely if the external vertical field could be adjusted to satisfy the condition Ω= in an l=3 stellarator. Here Ω= 2 >/B 0 2 -2ε cosθ, l is a pole number, |B tilde| the vacuum helical magnetic field, B 0 the toroidal field, ε the inverse aspect ratio, θ the poloidal angle and denotes the average over the toroidal angle. An example of such a stellarator equilibrium is presented in this paper. For this stellarator equilibrium, behavior of rotational transform and Boozer magnetic spectrum is clarified when the pressure is increased. Both formation of helical magnetic axis and reduction of toroidal curvature are important ingredients to reduce the P-S current. However, the collisionless particle confinement is not improved in this example. (author)

  1. Search for neutralinos in e+e- reactions at the L3 experiment

    International Nuclear Information System (INIS)

    Starosta, R.

    1992-10-01

    The present thesis deals with the search for neutralinos, which are predicted in the framework of the minimal supersymmetric standard model (MSSM). The lightest of the neutralinos is favorized as the lightest supersymmetric particle. With it, how far this assumption is confirmed, all decay chains of other SUSY particles would end. The data, on which the experimental studies are based, were collected in the year 1990 with the L3 detector at the e + e - -storage ring LEP at a c.m. energy around 91 GeV. In them no hint on the existence of SUSY particles is found, whereby a) deviations of the decay width of the Z 0 boson from the standard-model prediction and b) in hadronic final states directly detectable neutralinos are looked for. The results are presented in form of regions in the parameter space of the MSSM - tan β, M 2 , μ- as well as masses for the lightest neutralinos in dependence on tan β, which are excluded with 95% c.l. Quite generally it can be stated, that a neutralino with a mass of less than 19 geV for tan β>3 is no more allowed in the framework of the MSSM. (orig.) [de

  2. Asymmetric synthesis of L-[3-11C]phenylalanine using chiral hydrogenation catalysts

    International Nuclear Information System (INIS)

    Halldin, C.; Langstroem, B.

    1984-01-01

    The seven-step synthesis of L-[3- 11 C]phenylalanine using chiral diphosphines as ligands in rhodium catalysts is reported. [ 11 C]Benzaldehyde, prepared in a three-step reaction from [ 11 C]carbon dioxide, as reported elsewhere, was reacted with 2-phenyl-5-oxazolone or 2-(4-chloro)phenyl-5-oxazolone in the presence of the tertiary amine diazabicyclooctane (DABCO). The resultant [α- 11 C]-4-arylene-2-atyl-5-oxazolones were hydrogenated after ring opening, using the chiral rhodium complex of (R)-1,2-bis(diphenylphosphino)propane [(R)-PROPHOS] or (+)-2,3-isopropylidene-2,3-dihydroxy-1,4-bis(diphenylphosphino)butane [(+)-DIOP]. After removal of the amino protecting group, the labelled amino acid was obtained on purification by preparative LC in 10-15% radiochemical yield, and radiochemical purity higher than 95% from [ 11 C]carbon dioxide within 60 min. The optical purity of the products determined by the tRNA method and capillary GC, was 80 and 60% e.e., respectively (i.e. L/D=90/10 and 80/20). (author)

  3. Ultralow bias power all-optical photonic crystal memory realized with systematically tuned L3 nanocavity

    Energy Technology Data Exchange (ETDEWEB)

    Kuramochi, Eiichi, E-mail: kuramochi.eiichi@lab.ntt.co.jp; Nozaki, Kengo; Shinya, Akihiko; Taniyama, Hideaki; Notomi, Masaya [NTT Nanophotonics Center, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198 (Japan); NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198 (Japan); Takeda, Koji; Matsuo, Shinji [NTT Nanophotonics Center, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198 (Japan); NTT Device Technology Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198 (Japan); Sato, Tomonari [NTT Nanophotonics Center, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198 (Japan)

    2015-11-30

    An InP photonic crystal nanocavity with an embedded InGaAsP active region is a unique technology that has realized an all-optical memory with a sub-micro-watt operating power and limitless storage time. In this study, we employed an L3 design with systematic multi-hole tuning, which realized a higher loaded Q factor (>40 000) and a lower mode volume (0.9 μm{sup 3}) than a line-defect-based buried-heterostructure nanocavity (16 000 and 2.2 μm{sup 3}). Excluding the active region realized a record loaded Q factor (210 000) in all for InP-based nanocavities. The minimum bias power for bistable memory operation was reduced to 2.3 ± 0.3 nW, which is about 1/10 of the previous record of 30 nW. This work further established the capability of a bistable nanocavity memory for use in future ultralow-power-consumption on-chip integrated photonics.

  4. Association of low race performance with mtDNA haplogroup L3b of Australian thoroughbred horses.

    Science.gov (United States)

    Lin, Xiang; Zheng, Hong-Xiang; Davie, Allan; Zhou, Shi; Wen, Li; Meng, Jun; Zhang, Yong; Aladaer, Qimude; Liu, Bin; Liu, Wu-Jun; Yao, Xin-Kui

    2018-03-01

    Mitochondrial DNA (mtDNA) encodes the genes for respiratory chain sub-units that determine the efficiency of oxidative phosphorylation in mitochondria. The aim of this study was to determine if there were any haplogroups and variants in mtDNA that could be associated with athletic performance of Thoroughbred horses. The whole mitochondrial genomes of 53 maternally unrelated Australian Thoroughbred horses were sequenced and an association study was performed with the competition histories of 1123 horses within their maternal lineages. A horse mtDNA phylogenetic tree was constructed based on a total of 195 sequences (including 142 from previous reports). The association analysis showed that the sample groups with poor racing performance history were enriched in haplogroup L3b (p = .0003) and its sub-haplogroup L3b1a (p = .0007), while those that had elite performance appeared to be not significantly associated with haplogroups G2 and L3a1a1a (p > .05). Haplogroup L3b and L3b1a bear two and five specific variants of which variant T1458C (site 345 in 16s rRNA) is the only potential functional variant. Furthermore, secondary reconstruction of 16s RNA showed considerable differences between two types of 16s RNA molecules (with and without T1458C), indicating a potential functional effect. The results suggested that haplogroup L3b, could have a negative association with elite performance. The T1458C mutation harboured in haplogroup L3b could have a functional effect that is related to poor athletic performance.

  5. Recovery after fracture dislocation of L3/L4 ASIA B: Case report

    Directory of Open Access Journals (Sweden)

    Gustavo Caldera

    2016-02-01

    Full Text Available In fracture dislocations of the lumbar region, two anatomical facts can help preserve neurological damage in patients, when compared with trauma in the cervical or thoracic region. Firstly, the spinal cord in adults extends only to the lower edge of the first lumbar vertebra, and secondly, the large vertebral space in this region gives ample space for the roots of the cauda equine. As a result, the nerve injury may be minimal, because the nerve roots in this region are accommodated in a larger area, with less content and space. This study presents the case of a 48-year-old male, a construction worker, who suffered a fall from a height of approximately 15 meters, directly hitting the lumbar region against a beam, and presenting pain and inability to move the legs. The patient was brought to the emergency room 1 hour after the accident, clinically assessed, submitted to x-rays and a CT scan, and diagnosed as having an ASIA B L3-L4 fracture dislocation. Three hours after the accident, reduction was performed via posterior transpedicular fixation. One week later, an anterior approach was performed. The patient progressed to ASIA C 24 hours after the first surgery. Three months later, the patient was functional with ASIA D and good sphincter control. The author's purpose is to show the results obtained by an intervention in the initial hours of the trauma, which helped promote the evolution from a nonfunctional injury to a functional one, with near-total recovery. Keywords: Spine fracture, Recovery, Neurological deficit, Asia scale, Dislocation

  6. Spiral silicon drift detectors

    International Nuclear Information System (INIS)

    Rehak, P.; Gatti, E.; Longoni, A.; Sampietro, M.; Holl, P.; Lutz, G.; Kemmer, J.; Prechtel, U.; Ziemann, T.

    1988-01-01

    An advanced large area silicon photodiode (and x-ray detector), called Spiral Drift Detector, was designed, produced and tested. The Spiral Detector belongs to the family of silicon drift detectors and is an improvement of the well known Cylindrical Drift Detector. In both detectors, signal electrons created in silicon by fast charged particles or photons are drifting toward a practically point-like collection anode. The capacitance of the anode is therefore kept at the minimum (0.1pF). The concentric rings of the cylindrical detector are replaced by a continuous spiral in the new detector. The spiral geometry detector design leads to a decrease of the detector leakage current. In the spiral detector all electrons generated at the silicon-silicon oxide interface are collected on a guard sink rather than contributing to the detector leakage current. The decrease of the leakage current reduces the parallel noise of the detector. This decrease of the leakage current and the very small capacities of the detector anode with a capacitively matched preamplifier may improve the energy resolution of Spiral Drift Detectors operating at room temperature down to about 50 electrons rms. This resolution is in the range attainable at present only by cooled semiconductor detectors. 5 refs., 10 figs

  7. Contribution to the design and implementation of the trigger and acquisition system of the L3 experiment at LEP

    International Nuclear Information System (INIS)

    Cai, X.

    1994-10-01

    The thesis is devoted to the trigger and data acquisition system of the L3 experiment at LEP. It is a large distributed system with multiple levels to trigger, collect and record events detected by the L3 detector. The three trigger levels are designed to reduce a possible first level trigger rate of 100 Hz to a few Hz. The readout and event building systems have intermediate buffering so that the only dead time is only introduced during digitization of the detector signals. The emphasis of this thesis is on the Hadron Calorimeter (one of the sub detectors) readout system, the L3 event building system and the upgraded level-3-trigger system. Both hardware and software are described. (author). 126 refs., 48 figs., 23 tabs

  8. T cell antigen receptor expression by subsets of Ly-2-L3T4- (CD8-CD4-) thymocytes

    DEFF Research Database (Denmark)

    Wilson, A; Ewing, T; Owens, T

    1988-01-01

    . No positive cells were detected among Ly-2-L3T4- thymocytes from V beta 8-negative SJL mice. In contrast to the adult thymus, Ly-2-L3T4- cells from embryonic CBA thymus lacked F23.1-positive cells. Subsets of adult CBA Ly-2-L3T4- thymocytes were separated to determine which expressed V beta 8. The major...... B2A2-M1/69- and Pgp-1+ all included strongly F23.1-positive cells. A minor subset, negative for most markers except Pgp-1 and presumed on the basis of this phenotype and some reconstitution studies to include the earliest intrathymic precursors, contained 28% F23.1-positive cells. However, no F.23...

  9. Performance improvement of silicon solar cells by nanoporous silicon coating

    Directory of Open Access Journals (Sweden)

    Dzhafarov T. D.

    2012-04-01

    Full Text Available In the present paper the method is shown to improve the photovoltaic parameters of screen-printed silicon solar cells by nanoporous silicon film formation on the frontal surface of the cell using the electrochemical etching. The possible mechanisms responsible for observed improvement of silicon solar cell performance are discussed.

  10. Neuromorphic Silicon Neuron Circuits

    Science.gov (United States)

    Indiveri, Giacomo; Linares-Barranco, Bernabé; Hamilton, Tara Julia; van Schaik, André; Etienne-Cummings, Ralph; Delbruck, Tobi; Liu, Shih-Chii; Dudek, Piotr; Häfliger, Philipp; Renaud, Sylvie; Schemmel, Johannes; Cauwenberghs, Gert; Arthur, John; Hynna, Kai; Folowosele, Fopefolu; Saighi, Sylvain; Serrano-Gotarredona, Teresa; Wijekoon, Jayawan; Wang, Yingxue; Boahen, Kwabena

    2011-01-01

    Hardware implementations of spiking neurons can be extremely useful for a large variety of applications, ranging from high-speed modeling of large-scale neural systems to real-time behaving systems, to bidirectional brain–machine interfaces. The specific circuit solutions used to implement silicon neurons depend on the application requirements. In this paper we describe the most common building blocks and techniques used to implement these circuits, and present an overview of a wide range of neuromorphic silicon neurons, which implement different computational models, ranging from biophysically realistic and conductance-based Hodgkin–Huxley models to bi-dimensional generalized adaptive integrate and fire models. We compare the different design methodologies used for each silicon neuron design described, and demonstrate their features with experimental results, measured from a wide range of fabricated VLSI chips. PMID:21747754

  11. Silicon containing copolymers

    CERN Document Server

    Amiri, Sahar; Amiri, Sanam

    2014-01-01

    Silicones have unique properties including thermal oxidative stability, low temperature flow, high compressibility, low surface tension, hydrophobicity and electric properties. These special properties have encouraged the exploration of alternative synthetic routes of well defined controlled microstructures of silicone copolymers, the subject of this Springer Brief. The authors explore the synthesis and characterization of notable block copolymers. Recent advances in controlled radical polymerization techniques leading to the facile synthesis of well-defined silicon based thermo reversible block copolymers?are described along with atom transfer radical polymerization (ATRP), a technique utilized to develop well-defined functional thermo reversible block copolymers. The brief also focuses on Polyrotaxanes and their great potential as stimulus-responsive materials which produce poly (dimethyl siloxane) (PDMS) based thermo reversible block copolymers.

  12. Neuromorphic silicon neuron circuits

    Directory of Open Access Journals (Sweden)

    Giacomo eIndiveri

    2011-05-01

    Full Text Available Hardware implementations of spiking neurons can be extremely useful for a large variety of applications, ranging from high-speed modeling of large-scale neural systems to real-time behaving systems, to bidirectional brain-machine interfaces. The specific circuit solutions used to implement silicon neurons depend on the application requirements. In this paper we describe the most common building blocks and techniques used to implement these circuits, and present an overview of a wide range of neuromorphic silicon neurons, which implement different computational models, ranging from biophysically realistic and conductance based Hodgkin-Huxley models to bi-dimensional generalized adaptive Integrate and Fire models. We compare the different design methodologies used for each silicon neuron design described, and demonstrate their features with experimental results, measured from a wide range of fabricated VLSI chips.

  13. Floating Silicon Method

    Energy Technology Data Exchange (ETDEWEB)

    Kellerman, Peter

    2013-12-21

    The Floating Silicon Method (FSM) project at Applied Materials (formerly Varian Semiconductor Equipment Associates), has been funded, in part, by the DOE under a “Photovoltaic Supply Chain and Cross Cutting Technologies” grant (number DE-EE0000595) for the past four years. The original intent of the project was to develop the FSM process from concept to a commercially viable tool. This new manufacturing equipment would support the photovoltaic industry in following ways: eliminate kerf losses and the consumable costs associated with wafer sawing, allow optimal photovoltaic efficiency by producing high-quality silicon sheets, reduce the cost of assembling photovoltaic modules by creating large-area silicon cells which are free of micro-cracks, and would be a drop-in replacement in existing high efficiency cell production process thereby allowing rapid fan-out into the industry.

  14. The LHCb Silicon Tracker

    Energy Technology Data Exchange (ETDEWEB)

    Tobin, Mark, E-mail: Mark.Tobin@epfl.ch

    2016-09-21

    The LHCb experiment is dedicated to the study of heavy flavour physics at the Large Hadron Collider (LHC). The primary goal of the experiment is to search for indirect evidence of new physics via measurements of CP violation and rare decays of beauty and charm hadrons. The LHCb detector has a large-area silicon micro-strip detector located upstream of a dipole magnet, and three tracking stations with silicon micro-strip detectors in the innermost region downstream of the magnet. These two sub-detectors form the LHCb Silicon Tracker (ST). This paper gives an overview of the performance and operation of the ST during LHC Run 1. Measurements of the observed radiation damage are shown and compared to the expectation from simulation.

  15. Results on long-term performances and laboratory tests of the L3 RPC system at LEP

    CERN Document Server

    Alviggi, M G; Conventi, F; De Asmundis, R; Della Pietra, M; Della Volpe, D; Patricelli, S; Paolucci, P; Piccolo, D; Sciacca, C; Sekhniaidze, G

    2003-01-01

    The RPC detectors in the L3 experiment at LEP work as a trigger system for the Forward-Backward Muon Spectrometer. It consists of 192 bi-gap RPCs working in streamer mode. We monitored the behaviour of the system over seven years of data taking at LEP. To investigate the ageing of the RPCs after this long-term operation, we report the main results obtained from 1994 to 2000, together with the results of tests performed on some RPC chambers in our test site in Napoli with cosmic rays after the dismantling of L3.

  16. Removal of inclusions from silicon

    Science.gov (United States)

    Ciftja, Arjan; Engh, Thorvald Abel; Tangstad, Merete; Kvithyld, Anne; Øvrelid, Eivind Johannes

    2009-11-01

    The removal of inclusions from molten silicon is necessary to satisfy the purity requirements for solar grade silicon. This paper summarizes two methods that are investigated: (i) settling of the inclusions followed by subsequent directional solidification and (infiltration by ceramic foam filters. Settling of inclusions followed by directional solidification is of industrial importance for production of low-cost solar grade silicon. Filtration is reported as the most efficient method for removal of inclusions from the top-cut silicon scrap.

  17. Silicon photonic integration in telecommunications

    Directory of Open Access Journals (Sweden)

    Christopher Richard Doerr

    2015-08-01

    Full Text Available Silicon photonics is the guiding of light in a planar arrangement of silicon-based materials to perform various functions. We focus here on the use of silicon photonics to create transmitters and receivers for fiber-optic telecommunications. As the need to squeeze more transmission into a given bandwidth, a given footprint, and a given cost increases, silicon photonics makes more and more economic sense.

  18. Silicon Tracking Upgrade at CDF

    International Nuclear Information System (INIS)

    Kruse, M.C.

    1998-04-01

    The Collider Detector at Fermilab (CDF) is scheduled to begin recording data from Run II of the Fermilab Tevatron in early 2000. The silicon tracking upgrade constitutes both the upgrade to the CDF silicon vertex detector (SVX II) and the new Intermediate Silicon Layers (ISL) located at radii just beyond the SVX II. Here we review the design and prototyping of all aspects of these detectors including mechanical design, data acquisition, and a trigger based on silicon tracking

  19. Silicon microphones - a Danish perspective

    DEFF Research Database (Denmark)

    Bouwstra, Siebe; Storgaard-Larsen, Torben; Scheeper, Patrick

    1998-01-01

    Two application areas of microphones are discussed, those for precision measurement and those for hearing instruments. Silicon microphones are under investigation for both areas, and Danish industry plays a key role in both. The opportunities of silicon, as well as the challenges and expectations......, are discussed. For precision measurement the challenge for silicon is large, while for hearing instruments silicon seems to be very promising....

  20. Hg L3 XANES Study of Mercury Methylation in Shredded Eichhornia Crassipes

    International Nuclear Information System (INIS)

    Rajan, M.; Darrow, J.; Hua, M.; Barnett, B.; Mendoza, M.; Greenfield, B.K.; Andrews, J.C.

    2008-01-01

    Eichhornia crassipes (water hyacinth) is a non-native plant found in abundance in the Sacramento-San Joaquin River Delta (hereafter called Delta). This species has become a problem, clogging waterways and wetlands. Water hyacinth are also known to accumulate mercury. Recent attempts to curb its proliferation have included shredding with specialized boats. The purpose of this research is to better understand the ability of water hyacinth to phytoremediate mercury and to determine the effect of shredding and anoxic conditions on mercury speciation in plant tissue. In the field assessment, total mercury levels in sediment from the Dow Wetlands in the Delta were found to be 0.273 ± 0.070 ppm Hg, and levels in hyacinth roots and shoots from this site were 1.17 ± 0.08 ppm and 1.03 ± 0.52 ppm, respectively, indicating bioaccumulation of mercury. Plant samples collected at this site were also grown in nutrient solution with 1 ppm HgCl 2 under (1) aerobic conditions, (2) anaerobic conditions, and (3) with shredded plant material only. The greatest accumulation was found in the roots of whole plants. Plants grown in these conditions were also analyzed at Stanford Synchrotron Radiation Laboratory using Hg L 3 X-ray Absorption Near Edge Spectroscopy (XANES), a method to examine speciation that is element-specific and noninvasive. Least-squares fitting of the XANES data to methylated and inorganic mercury(II) model compounds revealed that in plants grown live and aerobically, 5 ± 3% of the mercury was in the form of methylmercury, in a form similar to methylmercury cysteine. This percentage increased to 16 ± 4% in live plants grown anaerobically and to 22 ± 6% in shredded anaerobic plants. We conclude that shredding of the hyacinth plants and, in fact, subjection of plants to anaerobic conditions (e.g., as in normal decay, or in crowded growth conditions) increases mercury methylation. Mechanical removal of the entire plant is significantly more expensive than shredding

  1. CMS silicon tracker developments

    International Nuclear Information System (INIS)

    Civinini, C.; Albergo, S.; Angarano, M.; Azzi, P.; Babucci, E.; Bacchetta, N.; Bader, A.; Bagliesi, G.; Basti, A.; Biggeri, U.; Bilei, G.M.; Bisello, D.; Boemi, D.; Bosi, F.; Borrello, L.; Bozzi, C.; Braibant, S.; Breuker, H.; Bruzzi, M.; Buffini, A.; Busoni, S.; Candelori, A.; Caner, A.; Castaldi, R.; Castro, A.; Catacchini, E.; Checcucci, B.; Ciampolini, P.; Creanza, D.; D'Alessandro, R.; Da Rold, M.; Demaria, N.; De Palma, M.; Dell'Orso, R.; Della Marina, R.D.R.; Dutta, S.; Eklund, C.; Feld, L.; Fiore, L.; Focardi, E.; French, M.; Freudenreich, K.; Frey, A.; Fuertjes, A.; Giassi, A.; Giorgi, M.; Giraldo, A.; Glessing, B.; Gu, W.H.; Hall, G.; Hammarstrom, R.; Hebbeker, T.; Honma, A.; Hrubec, J.; Huhtinen, M.; Kaminsky, A.; Karimaki, V.; Koenig, St.; Krammer, M.; Lariccia, P.; Lenzi, M.; Loreti, M.; Luebelsmeyer, K.; Lustermann, W.; Maettig, P.; Maggi, G.; Mannelli, M.; Mantovani, G.; Marchioro, A.; Mariotti, C.; Martignon, G.; Evoy, B. Mc; Meschini, M.; Messineo, A.; Migliore, E.; My, S.; Paccagnella, A.; Palla, F.; Pandoulas, D.; Papi, A.; Parrini, G.; Passeri, D.; Pieri, M.; Piperov, S.; Potenza, R.; Radicci, V.; Raffaelli, F.; Raymond, M.; Santocchia, A.; Schmitt, B.; Selvaggi, G.; Servoli, L.; Sguazzoni, G.; Siedling, R.; Silvestris, L.; Starodumov, A.; Stavitski, I.; Stefanini, G.; Surrow, B.; Tempesta, P.; Tonelli, G.; Tricomi, A.; Tuuva, T.; Vannini, C.; Verdini, P.G.; Viertel, G.; Xie, Z.; Yahong, Li; Watts, S.; Wittmer, B.

    2002-01-01

    The CMS Silicon tracker consists of 70 m 2 of microstrip sensors which design will be finalized at the end of 1999 on the basis of systematic studies of device characteristics as function of the most important parameters. A fundamental constraint comes from the fact that the detector has to be operated in a very hostile radiation environment with full efficiency. We present an overview of the current results and prospects for converging on a final set of parameters for the silicon tracker sensors

  2. Silicon hybrid integration

    International Nuclear Information System (INIS)

    Li Xianyao; Yuan Taonu; Shao Shiqian; Shi Zujun; Wang Yi; Yu Yude; Yu Jinzhong

    2011-01-01

    Recently,much attention has concentrated on silicon based photonic integrated circuits (PICs), which provide a cost-effective solution for high speed, wide bandwidth optical interconnection and optical communication.To integrate III-V compounds and germanium semiconductors on silicon substrates,at present there are two kinds of manufacturing methods, i.e., heteroepitaxy and bonding. Low-temperature wafer bonding which can overcome the high growth temperature, lattice mismatch,and incompatibility of thermal expansion coefficients during heteroepitaxy, has offered the possibility for large-scale heterogeneous integration. In this paper, several commonly used bonding methods are reviewed, and the future trends of low temperature wafer bonding envisaged. (authors)

  3. Strained Silicon Photonics

    Directory of Open Access Journals (Sweden)

    Ralf B. Wehrspohn

    2012-05-01

    Full Text Available A review of recent progress in the field of strained silicon photonics is presented. The application of strain to waveguide and photonic crystal structures can be used to alter the linear and nonlinear optical properties of these devices. Here, methods for the fabrication of strained devices are summarized and recent examples of linear and nonlinear optical devices are discussed. Furthermore, the relation between strain and the enhancement of the second order nonlinear susceptibility is investigated, which may enable the construction of optically active photonic devices made of silicon.

  4. Elite silicon and solar power

    International Nuclear Information System (INIS)

    Yasamanov, N.A.

    2000-01-01

    The article is of popular character, the following issues being considered: conversion of solar energy into electric one, solar batteries in space and on the Earth, growing of silicon large-size crystals, source material problems relating to silicon monocrystals production, outlooks of solar silicon batteries production [ru

  5. MODIS/Aqua Aerosol Cloud Water Vapor Ozone 8-Day L3 Global 1Deg CMG V006

    Data.gov (United States)

    National Aeronautics and Space Administration — MODIS/Aqua Aerosol Cloud Water Vapor Ozone 8-Day L3 Global 1Deg CMG (MYD08_E3). MODIS was launched aboard the Aqua satellite on May 04, 2002 (1:30 pm equator...

  6. MODIS/Terra Aerosol Cloud Water Vapor Ozone Daily L3 Global 1Deg CMG V006

    Data.gov (United States)

    National Aeronautics and Space Administration — MODIS/Terra Aerosol Cloud Water Vapor Ozone Daily L3 Global 1Deg CMG (MOD08_D3). MODIS was launched aboard the Terra satellite on December 18, 1999 (10:30 am equator...

  7. MODIS/Aqua Land Surface Temperature/3-Band Emissivity 8-Day L3 Global 1km SIN Grid V006

    Data.gov (United States)

    National Aeronautics and Space Administration — MODIS/Aqua Land Surface Temperature/3-Band Emissivity 8-Day L3 Global 1km SIN Grid (MYD21A2.006). A new suite of MODIS Land Surface Temperature (LST) and Emissivity...

  8. MODIS/Terra Land Surface Temperature/3-Band Emissivity 8-Day L3 Global 1km SIN Grid V006

    Data.gov (United States)

    National Aeronautics and Space Administration — MODIS/Terra Land Surface Temperature/3-Band Emissivity 8-Day L3 Global 1km SIN Grid (MOD21A2.006). A new suite of MODIS Land Surface Temperature (LST) and Emissivity...

  9. Effect of electrical stimulation of hamstrings and L3/4 dermatome on gait in spinal cord injury

    NARCIS (Netherlands)

    van der Salm, Arjan; Veltink, Petrus H.; Hermens, Hermanus J.; Nene, A.V.; IJzerman, Maarten Joost

    2006-01-01

    Objective. To determine the effect of electrical stimulation of hamstrings and L3/4 dermatome on the swing phase of gait. Materials and Methods. Five subjects with incomplete spinal cord injury (SCI) with spasticity were included. Two electrical stimulation methods were investigated, i.e.,

  10. AVHRR Pathfinder version 5.3 level 3 collated (L3C) global 4km sea surface temperature

    Data.gov (United States)

    National Oceanic and Atmospheric Administration, Department of Commerce — The AVHRR Pathfinder Version 5.3 (PFV53) L3C Sea Surface Temperature data set is a collection of global, twice-daily (Day and Night) 4km sea surface temperature...

  11. Examining Teachers' Views on the Implementation of English as L3 into Primary Schools: A Case of Kazakhstan

    Science.gov (United States)

    Zhetpisbayeva, Bakhytgul A.; Shelestova, Tatyana Y.; Abildina, Saltanat K.

    2016-01-01

    The Ministry of Education and Science of the Republic of Kazakhstan changed the State Educational Program for primary education and the curriculum for teaching English as a third language (L3) to grades 1-4 in 2013. As with many changes in the curriculum, English language teaching has also been changed and the starting age for learning of English…

  12. Prolonged re-expression of the hypermethylated gene EPB41L3 using artificial transcription factors and epigenetic drugs

    NARCIS (Netherlands)

    Huisman, Christian; van der Wijst, Monique G. P.; Falahi, Fahimeh; Overkamp, Juul; Karsten, Gellert; Terpstra, Martijn M.; Kok, Klaas; van der Zee, Ate G. J.; Schuuring, Ed; Wisman, G. Bea A.; Rots, Marianne G.

    2015-01-01

    Epigenetic silencing of tumor suppressor genes (TSGs) is considered a significant event in the progression of cancer. For example, EPB41L3, a potential biomarker in cervical cancer, is often silenced by cancer-specific promoter methylation. Artificial transcription factors (ATFs) are unique tools to

  13. MODIS/Aqua Aerosol Cloud Water Vapor Ozone Daily L3 Global 1Deg CMG V006

    Data.gov (United States)

    National Aeronautics and Space Administration — MODIS/Aqua Aerosol Cloud Water Vapor Ozone Daily L3 Global 1Deg CMG (MYD08_D3). MODIS was launched aboard the Aqua satellite on May 04, 2002 (1:30 pm equator...

  14. Selective formation of porous silicon

    Science.gov (United States)

    Fathauer, Robert W. (Inventor); Jones, Eric W. (Inventor)

    1993-01-01

    A pattern of porous silicon is produced in the surface of a silicon substrate by forming a pattern of crystal defects in said surface, preferably by applying an ion milling beam through openings in a photoresist layer to the surface, and then exposing said surface to a stain etchant, such as HF:HNO3:H2O. The defected crystal will preferentially etch to form a pattern of porous silicon. When the amorphous content of the porous silicon exceeds 70 percent, the porous silicon pattern emits visible light at room temperature.

  15. Transformational silicon electronics

    KAUST Repository

    Rojas, Jhonathan Prieto; Sevilla, Galo T.; Ghoneim, Mohamed T.; Inayat, Salman Bin; Ahmed, Sally; Hussain, Aftab M.; Hussain, Muhammad Mustafa

    2014-01-01

    In today's traditional electronics such as in computers or in mobile phones, billions of high-performance, ultra-low-power devices are neatly integrated in extremely compact areas on rigid and brittle but low-cost bulk monocrystalline silicon (100

  16. Silicon nitride nanosieve membrane

    NARCIS (Netherlands)

    Tong, D.H.; Jansen, Henricus V.; Gadgil, V.J.; Bostan, C.G.; Berenschot, Johan W.; van Rijn, C.J.M.; Elwenspoek, Michael Curt

    2004-01-01

    An array of very uniform cylindrical nanopores with a pore diameter as small as 25 nm has been fabricated in an ultrathin micromachined silicon nitride membrane using focused ion beam (FIB) etching. The pore size of this nanosieve membrane was further reduced to below 10 nm by coating it with

  17. OPAL Silicon Tungsten Luminometer

    CERN Multimedia

    OPAL was one of the four experiments installed at the LEP particle accelerator from 1989 - 2000. The Silicon Tungsten Luminometer was part of OPAL's calorimeter which was used to measure the energy of particles. Most particles end their journey in calorimeters. These detectors measure the energy deposited when particles are slowed down and stopped.

  18. Silicon graphene Bragg gratings.

    Science.gov (United States)

    Capmany, José; Domenech, David; Muñoz, Pascual

    2014-03-10

    We propose the use of interleaved graphene sections on top of a silicon waveguide to implement tunable Bragg gratings. The filter central wavelength and bandwidth can be controlled changing the chemical potential of the graphene sections. Apodization techniques are also presented.

  19. On nanostructured silicon success

    DEFF Research Database (Denmark)

    Sigmund, Ole; Jensen, Jakob Søndergaard; Frandsen, Lars Hagedorn

    2016-01-01

    Recent Letters by Piggott et al. 1 and Shen et al. 2 claim the smallest ever dielectric wave length and polarization splitters. The associated News & Views article by Aydin3 states that these works “are the first experimental demonstration of on-chip, silicon photonic components based on complex...

  20. Silicon oxynitride based photonics

    NARCIS (Netherlands)

    Worhoff, Kerstin; Klein, E.J.; Hussein, M.G.; Driessen, A.; Marciniak, M.; Jaworski, M.; Zdanowicz, M.

    2008-01-01

    Silicon oxynitride is a very attractive material for integrated optics. Besides possessing excellent optical properties it can be deposited with refractive indices varying over a wide range by tuning the material composition. In this contribution we will summarize the key properties of this material

  1. ALICE Silicon Pixel Detector

    CERN Multimedia

    Manzari, V

    2013-01-01

    The Silicon Pixel Detector (SPD) forms the innermost two layers of the 6-layer barrel Inner Tracking System (ITS). The SPD plays a key role in the determination of the position of the primary collision and in the reconstruction of the secondary vertices from particle decays.

  2. ALICE Silicon Strip Detector

    CERN Multimedia

    Nooren, G

    2013-01-01

    The Silicon Strip Detector (SSD) constitutes the two outermost layers of the Inner Tracking System (ITS) of the ALICE Experiment. The SSD plays a crucial role in the tracking of the particles produced in the collisions connecting the tracks from the external detectors (Time Projection Chamber) to the ITS. The SSD also contributes to the particle identification through the measurement of their energy loss.

  3. DELPHI Silicon Tracker

    CERN Multimedia

    DELPHI was one of the four experiments installed at the LEP particle accelerator from 1989 - 2000. The silicon tracking detector was nearest to the collision point in the centre of the detector. It was used to pinpoint the collision and catch short-lived particles.

  4. Arsenic implantation into polycrystalline silicon and diffusion to silicon substrate

    International Nuclear Information System (INIS)

    Tsukamoto, K.; Akasaka, Y.; Horie, K.

    1977-01-01

    Arsenic implantation into polycrystalline silicon and drive-in diffusion to silicon substrate have been investigated by MeV He + backscattering analysis and also by electrical measurements. The range distributions of arsenic implanted into polycrystalline silicon are well fitted to Gaussian distributions over the energy range 60--350 keV. The measured values of R/sub P/ and ΔR/sub P/ are about 10 and 20% larger than the theoretical predictions, respectively. The effective diffusion coefficient of arsenic implanted into polycrystalline silicon is expressed as D=0.63 exp[(-3.22 eV/kT)] and is independent of the arsenic concentration. The drive-in diffusion of arsenic from the implanted polycrystalline silicon layer into the silicon substrate is significantly affected by the diffusion atmosphere. In the N 2 atmosphere, a considerable amount of arsenic atoms diffuses outward to the ambient. The outdiffusion can be suppressed by encapsulation with Si 3 N 4 . In the oxidizing atmosphere, arsenic atoms are driven inward by growing SiO 2 due to the segregation between SiO 2 and polycrystalline silicon, and consequently the drive-in diffusion of arsenic is enhanced. At the interface between the polycrystalline silicon layer and the silicon substrate, arsenic atoms are likely to segregate at the polycrystalline silicon side

  5. Silicon epitaxy on textured double layer porous silicon by LPCVD

    International Nuclear Information System (INIS)

    Cai Hong; Shen Honglie; Zhang Lei; Huang Haibin; Lu Linfeng; Tang Zhengxia; Shen Jiancang

    2010-01-01

    Epitaxial silicon thin film on textured double layer porous silicon (DLPS) was demonstrated. The textured DLPS was formed by electrochemical etching using two different current densities on the silicon wafer that are randomly textured with upright pyramids. Silicon thin films were then grown on the annealed DLPS, using low-pressure chemical vapor deposition (LPCVD). The reflectance of the DLPS and the grown silicon thin films were studied by a spectrophotometer. The crystallinity and topography of the grown silicon thin films were studied by Raman spectroscopy and SEM. The reflectance results show that the reflectance of the silicon wafer decreases from 24.7% to 11.7% after texturing, and after the deposition of silicon thin film the surface reflectance is about 13.8%. SEM images show that the epitaxial silicon film on textured DLPS exhibits random pyramids. The Raman spectrum peaks near 521 cm -1 have a width of 7.8 cm -1 , which reveals the high crystalline quality of the silicon epitaxy.

  6. Fluorescence and thermoluminescence in silicon oxide films rich in silicon

    International Nuclear Information System (INIS)

    Berman M, D.; Piters, T. M.; Aceves M, M.; Berriel V, L. R.; Luna L, J. A.

    2009-10-01

    In this work we determined the fluorescence and thermoluminescence (TL) creation spectra of silicon rich oxide films (SRO) with three different silicon excesses. To study the TL of SRO, 550 nm of SRO film were deposited by Low Pressure Chemical Vapor Deposition technique on N-type silicon substrates with resistivity in the order of 3 to 5 Ω-cm with silicon excess controlled by the ratio of the gases used in the process, SRO films with Ro= 10, 20 and 30 (12-6% silicon excess) were obtained. Then, they were thermally treated in N 2 at high temperatures to diffuse and homogenize the silicon excess. In the fluorescence spectra two main emission regions are observed, one around 400 nm and one around 800 nm. TL creation spectra were determined by plotting the integrated TL intensity as function of the excitation wavelength. (Author)

  7. The CMS silicon tracker

    International Nuclear Information System (INIS)

    Focardi, E.; Albergo, S.; Angarano, M.; Azzi, P.; Babucci, E.; Bacchetta, N.; Bader, A.; Bagliesi, G.; Basti, A.; Biggeri, U.; Bilei, G.M.; Bisello, D.; Boemi, D.; Bosi, F.; Borrello, L.; Bozzi, C.; Braibant, S.; Breuker, H.; Bruzzi, M.; Buffini, A.; Busoni, S.; Candelori, A.; Caner, A.; Castaldi, R.; Castro, A.; Catacchini, E.; Checcucci, B; Ciampolini, P.; Civinini, C.; Creanza, D.; D'Alessandro, R.; Da Rold, M.; Demaria, N.; De Palma, M.; Dell'Orso, R.; Della Marina, R.; Dutta, S.; Eklund, C.; Feld, L.; Fiore, L.; French, M.; Freudenreich, K.; Frey, A.; Fuertjes, A.; Giassi, A.; Giorgi, M.; Giraldo, A.; Glessing, B.; Gu, W.H.; Hall, G.; Hammarstrom, R.; Hebbeker, T.; Honma, A.; Hrubec, J.; Huhtinen, M.; Kaminsky, A.; Karimaki, V.; Koenig, St.; Krammer, M.; Lariccia, P.; Lenzi, M.; Loreti, M.; Leubelsmeyer, K.; Lustermann, W.; Maettig, P.; Maggi, G.; Mannelli, M.; Mantovani, G.; Marchioro, A.; Mariotti, C.; Martignon, G.; Evoy, B.Mc; Meschini, M.; Messineo, A.; Migliore, E.; My, S.; Paccagnella, A.; Palla, F.; Pandoulas, D.; Papi, A.; Parrini, G.; Passeri, D.; Pieri, M.; Piperov, S.; Potenza, R.; Radicci, V.; Raffaelli, F.; Raymond, M.; Rizzo, F.; Santocchia, A.; Schmitt, B.; Selvaggi, G.; Servoli, L.; Sguazzoni, G.; Siedling, R.; Silvestris, L.; Starodumov, A.; Stavitski, I.; Stefanini, G.; Surrow, B.; Tempesta, P.; Tonelli, G.; Tricomi, A.; Tuuva, T.; Vannini, C.; Verdini, P.G.; Viertel, G.; Xie, Z.; Yahong, Li; Watts, S.; Wittmer, B.

    2000-01-01

    This paper describes the Silicon microstrip Tracker of the CMS experiment at LHC. It consists of a barrel part with 5 layers and two endcaps with 10 disks each. About 10 000 single-sided equivalent modules have to be built, each one carrying two daisy-chained silicon detectors and their front-end electronics. Back-to-back modules are used to read-out the radial coordinate. The tracker will be operated in an environment kept at a temperature of T=-10 deg. C to minimize the Si sensors radiation damage. Heavily irradiated detectors will be safely operated due to the high-voltage capability of the sensors. Full-size mechanical prototypes have been built to check the system aspects before starting the construction

  8. Undepleted silicon detectors

    International Nuclear Information System (INIS)

    Rancoita, P.G.; Seidman, A.

    1985-01-01

    Large-size silicon detectors employing relatively low resistivity material can be used in electromagnetic calorimetry. They can operate in strong magnetic fields, under geometric constraints and with microstrip detectors a high resolution can be achieved. Low noise large capacitance oriented electronics was developed to enable good signal-to-noise ratio for single relativistic particles traversing large area detectors. In undepleted silicon detectors, the charge migration from the field-free region has been investigated by comparing the expected peak position (from the depleted layer only) of the energy-loss of relativistic electrons with the measured one. Furthermore, the undepleted detectors have been employed in a prototype of Si/W electromagnetic colorimeter. The sensitive layer was found to be systematically larger than the depleted one

  9. Silicon nanowire transistors

    CERN Document Server

    Bindal, Ahmet

    2016-01-01

    This book describes the n and p-channel Silicon Nanowire Transistor (SNT) designs with single and dual-work functions, emphasizing low static and dynamic power consumption. The authors describe a process flow for fabrication and generate SPICE models for building various digital and analog circuits. These include an SRAM, a baseband spread spectrum transmitter, a neuron cell and a Field Programmable Gate Array (FPGA) platform in the digital domain, as well as high bandwidth single-stage and operational amplifiers, RF communication circuits in the analog domain, in order to show this technology’s true potential for the next generation VLSI. Describes Silicon Nanowire (SNW) Transistors, as vertically constructed MOS n and p-channel transistors, with low static and dynamic power consumption and small layout footprint; Targets System-on-Chip (SoC) design, supporting very high transistor count (ULSI), minimal power consumption requiring inexpensive substrates for packaging; Enables fabrication of different types...

  10. Amorphous silicon radiation detectors

    Science.gov (United States)

    Street, Robert A.; Perez-Mendez, Victor; Kaplan, Selig N.

    1992-01-01

    Hydrogenated amorphous silicon radiation detector devices having enhanced signal are disclosed. Specifically provided are transversely oriented electrode layers and layered detector configurations of amorphous silicon, the structure of which allow high electric fields upon application of a bias thereby beneficially resulting in a reduction in noise from contact injection and an increase in signal including avalanche multiplication and gain of the signal produced by incoming high energy radiation. These enhanced radiation sensitive devices can be used as measuring and detection means for visible light, low energy photons and high energy ionizing particles such as electrons, x-rays, alpha particles, beta particles and gamma radiation. Particular utility of the device is disclosed for precision powder crystallography and biological identification.

  11. Electron beam silicon purification

    Energy Technology Data Exchange (ETDEWEB)

    Kravtsov, Anatoly [SIA ' ' KEPP EU' ' , Riga (Latvia); Kravtsov, Alexey [' ' KEPP-service' ' Ltd., Moscow (Russian Federation)

    2014-11-15

    Purification of heavily doped electronic grade silicon by evaporation of N-type impurities with electron beam heating was investigated in process with a batch weight up to 50 kilos. Effective temperature of the melt, an indicative parameter suitable for purification process characterization was calculated and appeared to be stable for different load weight processes. Purified material was successfully approbated in standard CZ processes of three different companies. Each company used its standard process and obtained CZ monocrystals applicable for photovoltaic application. These facts enable process to be successfully scaled up to commercial volumes (150-300 kg) and yield solar grade silicon. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  12. Summary and evaluation: fuel dynamics loss-of-flow experiments (tests L2, L3, and L4)

    International Nuclear Information System (INIS)

    Barts, E.W.; Deitrich, L.W.; Eberhart, J.G.; Fischer, A.K.; Meek, C.C.

    1975-09-01

    Three similar experiments conducted to support the analyses of hypothetical LMFBR unprotected-loss-of-flow accidents are summarized and evaluated. The tests, designated L2, L3, and L4, provided experimental data against which accident-analysis codes could be compared, so as to guide further analysis and modeling of the initiating phases of the hypothetical accident. The tests were conducted using seven-pin bundles of mixed-oxide fuel pins in Mark-II flowing-sodium loops in the TREAT reactor. Test L2 used fresh fuel. Tests L3 and L4 used irradiated fuel pins having, respectively, ''intermediate-power'' (no central void) and ''high-power'' (fully developed central void) microstructure. 12 references

  13. Application of RELAP5/MOD3.1 code to the LOFT test L3-6

    International Nuclear Information System (INIS)

    Pylev, S.S.; Roginskaja, V.L.

    1998-02-01

    A calculation of LOFT Experiment L3-6, a small break equivalent to a 4-in diameter rupture in the cold leg of a four-loop commercial pressurized water reactor, has been performed to help validate RELAP5/MOD3.1 for this application. The version of the code to be used is SCDAP/RELAP5/MOD3.1.8d0. Three calculations were carried out in order to study the sensitivity to change break nozzle superheated discharge coefficient. Conducted comparative analysis of the LOFT L3-6 experiment shows on the whole a reasonable agreement between calculated data. Some discrepancies in the system pressure do not distort a picture of the transient. 6 refs

  14. Application of RELAP5/MOD3.1 code to the LOFT test L3-6

    Energy Technology Data Exchange (ETDEWEB)

    Pylev, S.S.; Roginskaja, V.L.

    1998-02-01

    A calculation of LOFT Experiment L3-6, a small break equivalent to a 4-in diameter rupture in the cold leg of a four-loop commercial pressurized water reactor, has been performed to help validate RELAP5/MOD3.1 for this application. The version of the code to be used is SCDAP/RELAP5/MOD3.1.8d0. Three calculations were carried out in order to study the sensitivity to change break nozzle superheated discharge coefficient. Conducted comparative analysis of the LOFT L3-6 experiment shows on the whole a reasonable agreement between calculated data. Some discrepancies in the system pressure do not distort a picture of the transient. 6 refs.

  15. Electrometallurgy of Silicon

    Science.gov (United States)

    1988-01-01

    wind, plants, and water impounded in elevated reservoirs. Photovoltaic or solar cells, which convert sunlight directly to electricity, belongs tc, the...on record is that of St. Claire DeVille, who claimed that silicon was produced by electrolysing an impure melt of NaAlC14, but his material did not...this composition and purified melts were electrolysed at about 14500C in graphite crucible and using graphite electrodes. Applied potentials were

  16. Liquid Silicon Pouch Anode

    Science.gov (United States)

    2017-09-06

    Number 15/696,426 Filing Date 6 September 2017 Inventor Charles J. Patrissi et al Address any questions concerning this matter to the...silicon-based anodes during cycling, lithium insertion and deinsertion. Mitigation of this problem has long been sought and will result in improved...design shown. [0032] It will be understood that many additional changes in the details, materials, steps and arrangement of parts, which have been

  17. The CMS silicon tracker

    International Nuclear Information System (INIS)

    D'Alessandro, R.; Biggeri, U.; Bruzzi, M.; Catacchini, E.; Civinini, C.; Focardi, E.; Lenzi, M.; Loreti, M.; Meschini, M.; Parrini, G.; Pieri, M.; Albergo, S.; Boemi, D.; Potenza, R.; Tricomi, A.; Angarano, M.; Creanza, D.; Palma, M. de; Fiore, L.; Maggi, G.; My, S.; Raso, G.; Selvaggi, G.; Tempesta, P.; Azzi, P.; Bacchetta, N.; Bisello, D.; Candelori, A.; Castro, A.; Da Rold, M.; Giraldo, A.; Martignon, G.; Paccagnella, A.; Stavitsky, I.; Babucci, E.; Bartalini, P.; Bilei, G.M.; Checcucci, B.; Ciampolini, P.; Lariccia, P.; Mantovani, G.; Passeri, D.; Santocchia, A.; Servoli, L.; Wang, Y.; Bagliesi, G.; Basti, A.; Bosi, F.; Borello, L.; Bozzi, C.; Castaldi, R.; Dell'Orso, R.; Giassi, A.; Messineo, A.; Palla, F.; Raffaelli, F.; Sguazzoni, G.; Starodumov, A.; Tonelli, G.; Vannini, C.; Verdini, P.G.; Xie, Z.; Breuker, H.; Caner, A.; Elliott-Peisert, A.; Feld, L.; Glessing, B.; Hammerstrom, R.; Huhtinen, M.; Mannelli, M.; Marchioro, A.; Schmitt, B.; Stefanini, G.; Connotte, J.; Gu, W.H.; Luebelsmeyer, K.; Pandoulas, D.; Siedling, R.; Wittmer, B.; Della Marina, R.; Freudenreich, K.; Lustermann, W.; Viertel, G.; Eklund, C.; Karimaeki, V.; Skog, K.; French, M.; Hall, G.; Mc Evoy, B.; Raymond, M.; Hrubec, J.; Krammer, M.; Piperov, S.; Tuuva, T.; Watts, S.; Silvestris, L.

    1998-01-01

    The new silicon tracker layout (V4) is presented. The system aspects of the construction are discussed together with the expected tracking performance. Because of the high radiation environment in which the detectors will operate, particular care has been devoted to the study of the characteristics of heavily irradiated detectors. This includes studies on performance (charge collection, cluster size, resolution, efficiency) as a function of the bias voltage, integrated fluence, incidence angle and temperature. (author)

  18. Selfsupported epitaxial silicon films

    International Nuclear Information System (INIS)

    Lazarovici, D.; Popescu, A.

    1975-01-01

    The methods of removing the p or p + support of an n-type epitaxial silicon layer using electrochemical etching are described. So far, only n + -n junctions have been processed. The condition of anodic dissolution for some values of the support and layer resistivity are given. By this method very thin single crystal selfsupported targets of convenient areas can be obtained for channeling - blocking experiments

  19. Silicon and Civilization,

    Science.gov (United States)

    1980-11-04

    of a diamond. 7. The particular physical and chemical properties of silicon resulted in the fact that in the periodic system it was found in the III...small quantities. Silica is found in blades of grass and grain, in reed and bamboo shoots, where it serves to stiffen the stalk. 2. Diatomite ... properties desired in technology. Quartz glass is very resistant to temperature change since it has a very small coefficient of thermal expansion, is

  20. Porous silicon: silicon quantum dots for photonic applications

    International Nuclear Information System (INIS)

    Pavesi, L.; Guardini, R.

    1996-01-01

    Porous silicon formation and structure characterization are briefly illustrated. Its luminescence properties rae presented and interpreted on the basis of exciton recombination in quantum dot structures: the trap-controlled hopping mechanism is used to describe the recombination dynamics. Porous silicon application to photonic devices is considered: porous silicon multilayer in general, and micro cavities in particular are described. The present situation in the realization of porous silicon LEDs is considered, and future developments in this field of research are suggested. (author). 30 refs., 30 figs., 13 tabs

  1. Photovoltaic characteristics of porous silicon /(n+ - p) silicon solar cells

    International Nuclear Information System (INIS)

    Dzhafarov, T.D.; Aslanov, S.S.; Ragimov, S.H.; Sadigov, M.S.; Nabiyeva, A.F.; Yuksel, Aydin S.

    2012-01-01

    Full text : The purpose of this work is to improve the photovoltaic parameters of the screen-printed silicon solar cells by formation the nano-porous silicon film on the frontal surface of the cell. The photovoltaic characteristics of two type silicon solar cells with and without porous silicon layer were measured and compared. A remarkable increment of short-circuit current density and the efficiency by 48 percent and 20 percent, respectively, have been achieved for PS/(n + - pSi) solar cell comparing to (n + - p)Si solar cell without PS layer

  2. Double-tag events study with the L3 detector at $\\sqrt{s}$ = 189 GeV

    CERN Document Server

    Achard, Pablo

    2000-01-01

    A preliminary study of double tag events using the L3 detector at center of mass energy sqrt{s}=189 GeV has been performed. The cross-section of gamma* gamma* collisions is measured at average =14.5 GeV2. The results are in agreement with predictions based on perturbative QCD, while the Quark Parton Model alone is insufficient to describe the data. The measurements lie below the LO and above the NLO BFKL calculations.

  3. The Coulomb deflection effect on the L3-subshell alignment in low-velocity proton impact ionisation

    International Nuclear Information System (INIS)

    Palinkas, J.; Schlenk, B.; Valek, A.

    1981-01-01

    The alignment parameter of the L 3 subshell of gold has been determined by measuring the angular distribution of the Lsub(l)/Lsub(γ) intensity ratio following proton impact ionisation in the 0.25-0.60 MeV energy range. The experimental results make it clear that the minimum of the alignment parameter at low energies found earlier for He + impact also exists in the case of proton impact ionisation. (author)

  4. A novel biosurfactant produced by Aureobasidium pullulans L3-GPY from a tiger lily wild flower, Lilium lancifolium Thunb.

    Science.gov (United States)

    Kim, Jong Shik; Lee, In Kyoung; Yun, Bong Sik

    2015-01-01

    Yeast biosurfactants are important biotechnological products in the food industry, and they have medical and cosmeceutical applications owing to their specific modes of action, low toxicity, and applicability. Thus, we have isolated and examined biosurfactant-producing yeast for various industrial and medical applications. A rapid and simple method was developed to screen biosurfactant-producing yeasts for high production of eco-friendly biosurfactants. Using this method, several potential niches of biosurfactant-producing yeasts, such as wild flowers, were investigated. We successfully selected a yeast strain, L3-GPY, with potent surfactant activity from a tiger lily, Lilium lancifolium Thunb. Here, we report the first identification of strain L3-GPY as the black yeast Aureobasidium pullulans. In addition, we isolated a new low-surface-tension chemical, designated glycerol-liamocin, from the culture supernatant of strain L3-GPY through consecutive chromatography steps, involving an ODS column, solvent partition, silica gel, Sephadex LH-20, and an ODS Sep-Pak cartridge column. The chemical structure of glycerol-liamocin, determined by mass spectrometry and nuclear magnetic resonance spectroscopy, indicates that it is a novel compound with the molecular formula C33H62O12. Furthermore, glycerol-liamocin exhibited potent biosurfactant activity (31 mN/m). These results suggest that glycerol-liamocin is a potential novel biosurfactantfor use in various industrial applications.

  5. Biochemical characterization of an autoradiographic method for studying excitatory amino acid receptors using L-[3H]glutamate

    International Nuclear Information System (INIS)

    Cincotta, M.; Summers, R.J.; Beart, P.M.

    1989-01-01

    A method was developed for radiolabeling excitatory amino acid receptors of rat brain with L-[ 3 H]glutamate. Effective labeling of glutamate receptors in slide-mounted 10-microns sections was obtained using a low incubation volume (0.15 ml) and rapid washing: a procedure where high ligand concentrations were achieved with minimal waste. Saturation experiments using [ 3 H]glutamate revealed a single binding site of micromolar affinity. The Bmax was trebled in the presence of Ca2+ (2.5 mM) and Cl- (20 mM) with no change in the Kd. Binding was rapid, saturable, stereospecific, and sensitive to glutamate receptor agonists. The proportions of [ 3 H]glutamate binding sensitive to N-methyl-D-aspartate (NMDA), kainate, and alpha-amino-3-hydroxy-5-methyl-4-isoxazolepropionic acid (AMPA) were 34, 54, and 51%, respectively. NMDA inhibited binding at a distinct subset of L-[ 3 H]glutamate sites, whereas AMPA and kainate competed for some common sites. Labeling of sections with L-[ 3 H]glutamate in the presence of the selective agonists allowed autoradiographic visualization of glutamate receptor subtypes in brain tissue

  6. Bacillus licheniformis BlaR1 L3 Loop Is a Zinc Metalloprotease Activated by Self-Proteolysis

    Science.gov (United States)

    Sépulchre, Jérémy; Amoroso, Ana; Joris, Bernard

    2012-01-01

    In Bacillus licheniformis 749/I, BlaP β-lactamase is induced by the presence of a β-lactam antibiotic outside the cell. The first step in the induction mechanism is the detection of the antibiotic by the membrane-bound penicillin receptor BlaR1 that is composed of two functional domains: a carboxy-terminal domain exposed outside the cell, which acts as a penicillin sensor, and an amino-terminal domain anchored to the cytoplasmic membrane, which works as a transducer-transmitter. The acylation of BlaR1 sensor domain by the antibiotic generates an intramolecular signal that leads to the activation of the L3 cytoplasmic loop of the transmitter by a single-point cleavage. The exact mechanism of L3 activation and the nature of the secondary cytoplasmic signal launched by the activated transmitter remain unknown. However, these two events seem to be linked to the presence of a HEXXH zinc binding motif of neutral zinc metallopeptidases. By different experimental approaches, we demonstrated that the L3 loop binds zinc ion, belongs to Gluzincin metallopeptidase superfamily and is activated by self-proteolysis. PMID:22623956

  7. Silicon photonics fundamentals and devices

    CERN Document Server

    Deen, M Jamal

    2012-01-01

    The creation of affordable high speed optical communications using standard semiconductor manufacturing technology is a principal aim of silicon photonics research. This would involve replacing copper connections with optical fibres or waveguides, and electrons with photons. With applications such as telecommunications and information processing, light detection, spectroscopy, holography and robotics, silicon photonics has the potential to revolutionise electronic-only systems. Providing an overview of the physics, technology and device operation of photonic devices using exclusively silicon and related alloys, the book includes: * Basic Properties of Silicon * Quantum Wells, Wires, Dots and Superlattices * Absorption Processes in Semiconductors * Light Emitters in Silicon * Photodetectors , Photodiodes and Phototransistors * Raman Lasers including Raman Scattering * Guided Lightwaves * Planar Waveguide Devices * Fabrication Techniques and Material Systems Silicon Photonics: Fundamentals and Devices outlines ...

  8. Radiation Hardening of Silicon Detectors

    CERN Multimedia

    Leroy, C; Glaser, M

    2002-01-01

    %RD48 %title\\\\ \\\\Silicon detectors will be widely used in experiments at the CERN Large Hadron Collider where high radiation levels will cause significant bulk damage. In addition to increased leakage current and charge collection losses worsening the signal to noise, the induced radiation damage changes the effective doping concentration and represents the limiting factor to long term operation of silicon detectors. The objectives are to develop radiation hard silicon detectors that can operate beyond the limits of the present devices and that ensure guaranteed operation for the whole lifetime of the LHC experimental programme. Radiation induced defect modelling and experimental results show that the silicon radiation hardness depends on the atomic impurities present in the initial monocrystalline material.\\\\ \\\\ Float zone (FZ) silicon materials with addition of oxygen, carbon, nitrogen, germanium and tin were produced as well as epitaxial silicon materials with epilayers up to 200 $\\mu$m thickness. Their im...

  9. Amorphous silicon based particle detectors

    OpenAIRE

    Wyrsch, N.; Franco, A.; Riesen, Y.; Despeisse, M.; Dunand, S.; Powolny, F.; Jarron, P.; Ballif, C.

    2012-01-01

    Radiation hard monolithic particle sensors can be fabricated by a vertical integration of amorphous silicon particle sensors on top of CMOS readout chip. Two types of such particle sensors are presented here using either thick diodes or microchannel plates. The first type based on amorphous silicon diodes exhibits high spatial resolution due to the short lateral carrier collection. Combination of an amorphous silicon thick diode with microstrip detector geometries permits to achieve micromete...

  10. Characterization of Czochralski Silicon Detectors

    OpenAIRE

    Luukka, Panja-Riina; Haerkoenen, Jaakko

    2012-01-01

    This thesis describes the characterization of irradiated and non-irradiated segmenteddetectors made of high-resistivity (>1 kΩcm) magnetic Czochralski (MCZ) silicon. It isshown that the radiation hardness (RH) of the protons of these detectors is higher thanthat of devices made of traditional materials such as Float Zone (FZ) silicon or DiffusionOxygenated Float Zone (DOFZ) silicon due to the presence of intrinsic oxygen (> 5 x1017 cm-3). The MCZ devices therefore present an interesting alter...

  11. Siloxanes in silicone products intended for food contact

    DEFF Research Database (Denmark)

    Cederberg, Tommy Licht; Jensen, Lisbeth Krüger

    oligomers which might migrate to the food when the product is being used. DTU has proposed two action limits for low molecular weight siloxanes in food contact materials. For the sum of cyclic siloxanes D3 to D8 the limits are 12 mg/kg food for adults and 2 mg/kg food for children. For the sum of cyclic...... siloxanes D3 to D13 and linear siloxanes L3-L13 the limit is 60 mg/kg food. In 49 samples of silicone products intended for food contact from the Norwegian markets content of siloxanes has been measured. Coated paper for baking constituted 8 of the samples and in none of those samples siloxanes were found......Silicone is used in food contact materials due to its excellent physical and chemical properties. It is thermostable and flexible and is used in bakeware and kitchen utensils. Silicone is also used to coat paper to make it water and fat resistant. There is no specific regulation in EU which covers...

  12. Laboratory course on silicon sensors

    CERN Document Server

    Crescio, E; Roe, S; Rudge, A

    2003-01-01

    The laboratory course consisted of four different mini sessions, in order to give the student some hands-on experience on various aspects of silicon sensors and related integrated electronics. The four experiments were. 1. Characterisation of silicon diodes for particle detection 2. Study of noise performance of the Viking readout circuit 3. Study of the position resolution of a silicon microstrip sensor 4. Study of charge transport in silicon with a fast amplifier The data in the following were obtained during the ICFA school by the students.

  13. Silicon processing for photovoltaics II

    CERN Document Server

    Khattak, CP

    2012-01-01

    The processing of semiconductor silicon for manufacturing low cost photovoltaic products has been a field of increasing activity over the past decade and a number of papers have been published in the technical literature. This volume presents comprehensive, in-depth reviews on some of the key technologies developed for processing silicon for photovoltaic applications. It is complementary to Volume 5 in this series and together they provide the only collection of reviews in silicon photovoltaics available.The volume contains papers on: the effect of introducing grain boundaries in silicon; the

  14. Search for supersymmetry in 2 different topologies with the L3 detector at Lep; Recherche de supersymetrie dans les canaux avec un ou deux leptons avec le detecteur L3 a LEP

    Energy Technology Data Exchange (ETDEWEB)

    Balandras, A

    2000-11-13

    The present thesis presents two different aspects of my work in the L3 experiment, which are on one side the search for supersymmetric particles, the scalar leptons, in two different topologies 'electron + X + E' and '2 leptons + 2 photons + E', each of them being related to two theoretical SUSY models, m-SUGRA and GMSB. On the other side my work has been completed by the study of the BGO crystal electromagnetic calorimeter of L3, and the calibration of the electromagnetic calorimeter EGAP. After the essential motivations being reviewed, the production and disintegration modes are detailed concerning the scalar lepton sector at LEP. Then one presents the analysis techniques which I used to perform my selection, and also the results obtained from the data collected by L3 for center of mass energies between {radical} S =183 GeV and 202 GeV. The selection criteria that allow to isolate the events I looked for, including efficiencies but also the background rate coming from Standard Model that one can expect are presented. The final interpretations of those results in both frameworks of m-SUGRA and GMSB are detailed at the end of this thesis. I took benefit of those results to derive some limits on the masses of the scalar leptons that do not depend on the free parameters of the SUSY models, especially on the selectron mass in the framework of m-SUGRA: M{sub e}-tilde{sub R} > 71.2 GeV. (authors)

  15. Electrical leakage phenomenon in heteroepitaxial cubic silicon carbide on silicon

    Science.gov (United States)

    Pradeepkumar, Aiswarya; Zielinski, Marcin; Bosi, Matteo; Verzellesi, Giovanni; Gaskill, D. Kurt; Iacopi, Francesca

    2018-06-01

    Heteroepitaxial 3C-SiC films on silicon substrates are of technological interest as enablers to integrate the excellent electrical, electronic, mechanical, thermal, and epitaxial properties of bulk silicon carbide into well-established silicon technologies. One critical bottleneck of this integration is the establishment of a stable and reliable electronic junction at the heteroepitaxial interface of the n-type SiC with the silicon substrate. We have thus investigated in detail the electrical and transport properties of heteroepitaxial cubic silicon carbide films grown via different methods on low-doped and high-resistivity silicon substrates by using van der Pauw Hall and transfer length measurements as test vehicles. We have found that Si and C intermixing upon or after growth, particularly by the diffusion of carbon into the silicon matrix, creates extensive interstitial carbon traps and hampers the formation of a stable rectifying or insulating junction at the SiC/Si interface. Although a reliable p-n junction may not be realistic in the SiC/Si system, we can achieve, from a point of view of the electrical isolation of in-plane SiC structures, leakage suppression through the substrate by using a high-resistivity silicon substrate coupled with deep recess etching in between the SiC structures.

  16. Light emitting structures porous silicon-silicon substrate

    International Nuclear Information System (INIS)

    Monastyrskii, L.S.; Olenych, I.B.; Panasjuk, M.R.; Savchyn, V.P.

    1999-01-01

    The research of spectroscopic properties of porous silicon has been done. Complex of photoluminescence, electroluminescence, cathodoluminescence, thermostimulated depolarisation current analyte methods have been applied to study of geterostructures and free layers of porous silicon. Light emitting processes had tendency to decrease. The character of decay for all kinds of luminescence were different

  17. Indentation fatigue in silicon nitride, alumina and silicon carbide ...

    Indian Academy of Sciences (India)

    Repeated indentation fatigue (RIF) experiments conducted on the same spot of different structural ceramics viz. a hot pressed silicon nitride (HPSN), sintered alumina of two different grain sizes viz. 1 m and 25 m, and a sintered silicon carbide (SSiC) are reported. The RIF experiments were conducted using a Vicker's ...

  18. The LHCb Silicon Tracker

    CERN Document Server

    Elsasser, Ch; Gallas Torreira, A; Pérez Trigo, A; Rodríguez Pérez, P; Bay, A; Blanc, F; Dupertuis, F; Haefeli, G; Komarov, I; Märki, R; Muster, B; Nakada, T; Schneider, O; Tobin, M; Tran, M T; Anderson, J; Bursche, A; Chiapolini, N; Saornil, S; Steiner, S; Steinkamp, O; Straumann, U; Vollhardt, A; Britsch, M; Schmelling, M; Voss, H; Okhrimenko, O; Pugatch, V

    2013-01-01

    The aim of the LHCb experiment is to study rare heavy quark decays and CP vio- lation with the high rate of beauty and charmed hadrons produced in $pp$ collisions at the LHC. The detector is designed as a single-arm forward spectrometer with excellent tracking and particle identification performance. The Silicon Tracker is a key part of the tracking system to measure the particle trajectories to high precision. This paper reports the performance as well as the results of the radiation damage monitoring based on leakage currents and on charge collection efficiency scans during the data taking in the LHC Run I.

  19. Photovoltaics: sunshine and silicon

    Energy Technology Data Exchange (ETDEWEB)

    Stirzaker, Mike

    2006-05-15

    Spain's photovoltaic sector grew rapidly in 2004 only to slow down in 2005. While a State-guaranteed feed-in tariff is in place to drive a take-off, some of the smaller administrative cogs are buckling under the pressure. Projects are being further slowed by soaring world silicon prices and module shortages. Nevertheless, market volume is higher than ever before, and bio capital from both home and abroad is betting that the Spanish take-off is around the corner. (Author)

  20. Magnetically retained silicone facial prosthesis

    African Journals Online (AJOL)

    2013-06-09

    Jun 9, 2013 ... Prosthetic camouflaging of facial defects and use of silicone maxillofacial material are the alternatives to the surgical retreatment. Silicone elastomers provide more options to clinician for customization of the facial prosthesis which is simple, esthetically good when coupled with bio magnets for retention.

  1. Impurity doping processes in silicon

    CERN Document Server

    Wang, FFY

    1981-01-01

    This book introduces to non-experts several important processes of impurity doping in silicon and goes on to discuss the methods of determination of the concentration of dopants in silicon. The conventional method used is the discussion process, but, since it has been sufficiently covered in many texts, this work describes the double-diffusion method.

  2. Radiation hard cryogenic silicon detectors

    International Nuclear Information System (INIS)

    Casagrande, L.; Abreu, M.C.; Bell, W.H.; Berglund, P.; Boer, W. de; Borchi, E.; Borer, K.; Bruzzi, M.; Buontempo, S.; Chapuy, S.; Cindro, V.; Collins, P.; D'Ambrosio, N.; Da Via, C.; Devine, S.; Dezillie, B.; Dimcovski, Z.; Eremin, V.; Esposito, A.; Granata, V.; Grigoriev, E.; Hauler, F.; Heijne, E.; Heising, S.; Janos, S.; Jungermann, L.; Konorov, I.; Li, Z.; Lourenco, C.; Mikuz, M.; Niinikoski, T.O.; O'Shea, V.; Pagano, S.; Palmieuri, V.G.; Paul, S.; Pirollo, S.; Pretzl, K.; Rato, P.; Ruggiero, G.; Smith, K.; Sonderegger, P.; Sousa, P.; Verbitskaya, E.; Watts, S.; Zavrtanik, M.

    2002-01-01

    It has been recently observed that heavily irradiated silicon detectors, no longer functional at room temperature, 'resuscitate' when operated at temperatures below 130 K. This is often referred to as the 'Lazarus effect'. The results presented here show that cryogenic operation represents a new and reliable solution to the problem of radiation tolerance of silicon detectors

  3. Recent developments in silicon calorimetry

    International Nuclear Information System (INIS)

    Brau, J.E.

    1990-11-01

    We present a survey of some of the recent calorimeter applications of silicon detectors. The numerous attractive features of silicon detectors are summarized, with an emphasis on those aspects important to calorimetry. Several of the uses of this technology are summarized and referenced. We consider applications for electromagnetic calorimetry, hadronic calorimetry, and proposals for the SSC

  4. Amorphous silicon ionizing particle detectors

    Science.gov (United States)

    Street, Robert A.; Mendez, Victor P.; Kaplan, Selig N.

    1988-01-01

    Amorphous silicon ionizing particle detectors having a hydrogenated amorphous silicon (a--Si:H) thin film deposited via plasma assisted chemical vapor deposition techniques are utilized to detect the presence, position and counting of high energy ionizing particles, such as electrons, x-rays, alpha particles, beta particles and gamma radiation.

  5. Flowmeter with silicon flow tube

    NARCIS (Netherlands)

    Lammerink, Theodorus S.J.; Dijkstra, Marcel; Haneveld, J.; Lötters, Joost Conrad

    2009-01-01

    A flowmeter comprising a system chip with a silicon substrate provided on a carrier, in an opening whereof at least one silicon flow tube is provided for transporting a medium whose flow rate is to be measured, said tube having two ends that issue via a wall of the opening into channels coated with

  6. Luneburg lens in silicon photonics.

    Science.gov (United States)

    Di Falco, Andrea; Kehr, Susanne C; Leonhardt, Ulf

    2011-03-14

    The Luneburg lens is an aberration-free lens that focuses light from all directions equally well. We fabricated and tested a Luneburg lens in silicon photonics. Such fully-integrated lenses may become the building blocks of compact Fourier optics on chips. Furthermore, our fabrication technique is sufficiently versatile for making perfect imaging devices on silicon platforms.

  7. Interpretation of the U L3-edge EXAFS in uranium dioxide using molecular dynamics and density functional theory simulations

    International Nuclear Information System (INIS)

    Bocharov, Dmitry; Chollet, Melanie; Krack, Matthias; Bertsch, Johannes; Grolimund, Daniel; Martin, Matthias; Kuzmin, Alexei; Purans, Juris; Kotomin, Eugene

    2016-01-01

    X-ray absorption spectroscopy is employed to study the local structure of pure and Cr-doped UO 2 at 300 K. The U L 3 -edge EXAFS spectrum is interpreted within the multiplescattering (MS) theory using the results of the classical and ab initio molecular dynamics simulations, allowing us to validate the accuracy of theoretical models. The Cr K-edge XANES is simulated within the full-multiple-scattering formalism considering a substitutional model (Cr at U site). It is shown that both unrelaxed and relaxed structures, produced by ab initio density functional theory (DFT) calculations, fail to describe the experiment. (paper)

  8. A search for flaring Very-High-Energy cosmic-ray sources with the L3+C muon spectrometer

    CERN Document Server

    Achard, P; Aguilar-Benítez, M; Van den Akker, M; Alcaraz, J; Alemanni, G; Allaby, James V; Aloisio, A; Alviggi, M G; Anderhub, H; Andreev, V P; Anselmo, F; Arefev, A; Azemoon, T; Aziz, T; Bagnaia, P; Bajo, A; Baksay, G; Baksay, L; Bähr, J; Baldew, S V; Banerjee, S; Banerjee, Sw; Barczyk, A; Barillère, R; Bartalini, P; Basile, M; Batalova, N; Battiston, R; Bay, A; Becattini, F; Becker, U; Behner, F; Bellucci, L; Berbeco, R; Berdugo, J; Berges, P; Bertucci, B; Betev, B L; Biasini, M; Biglietti, M; Biland, A; Blaising, J J; Blyth, S C; Bobbink, G J; Böhm, A; Boldizsar, L; Borgia, B; Bottai, S; Bourilkov, D; Bourquin, M; Braccini, S; Branson, J G; Brochu, F; Burger, J D; Burger, W J; Cai, X D; Capell, M; Cara Romeo, G; Carlino, G; Cartacci, A; Casaus, J; Cavallari, F; Cavallo, N; Cecchi, C; Cerrada, M; Chamizo-Llatas, M; Chang, Y H; Chemarin, M; Chen, A; Chen, G; Chen, G M; Chen, H F; Chen, H S; Chiarusi, T; Chiefari, G; Cifarelli, L; Cindolo, F; Clare, I; Clare, R; Coignet, G; Colino, N; Costantini, S; de la Cruz, B; Cucciarelli, S; De Asmundis, R; Dglon, P; Debreczeni, J; Degré, A; Dehmelt, K; Deiters, K; Della Volpe, D; Delmeire, E; Denes, P; De Notaristefani, F; De Salvo, A; Diemoz, M; Dierckxsens, M; Ding, L K; Dionisi, C; Dittmar, M; Doria, A; Dova, M T; Duchesneau, D; Duda, M; Durán, I; Echenard, B; Eline, A; El-Hage, A; El-Mamouni, H; Engler, A; Eppling, F J; Extermann, P; Faber, G; Falagán, M A; Falciano, S; Favara, A; Fay, J; Fedin, O; Felcini, M; Ferguson, T; Fesefeldt, H S; Fiandrini, E; Field, J H; Filthaut, F; Fisher, P H; Fisher, W; Fisk, I; Forconi, G; Freudenreich, K; Furetta, C; Galaktionov, Yu; Ganguli, S N; García-Abia, P; Gataullin, M; Gentile, S; Giagu, S; Gong, Z F; Grenier, H; Grabosch, G; Grimm, O; Groenstege, H; Grünewald, M W; Guida, M; Guo, Y N; Gupta, S K; Gupta, V K; Gurtu, A; Gutay, L J; Haas, D; Haller, C; Hatzifotiadou, D; Hayashi, Y; He, Z X; Hebbeker, T; Hervé, A; Hirschfelder, J; Hofer, H; Hohlmann, M; Holzner, G; Hou, S R; Huo, A X; Ito, N; Jin, B N; Jindal, P; Jing, C L; Jones, L W; de Jong, P; Josa-Mutuberría, M I; Kantserov, V A; Kaur, i; Kawakami, S; Kienzle-Focacci, M N; Kim, J K; Kirkby, Jasper; Kittel, W; Klimentov, A; König, A C; Kok, E; Korn, A; Kopal, M; Koutsenko, V F; Kräber, M; Kuang, H H; Krämer, R W; Krüger, A; Kuijpers, J; Kunin, A; Ladrón de Guevara, P; Laktineh, I; Landi, G; Lebeau, M; Lebedev, A; Lebrun, P; Lecomte, P; Lecoq, P; Le Coultre, P; Le Goff, J M; Lei, Y; Leich, H; Leiste, R; Levtchenko, M; Levchenko, P M; Li, C; Li, L; Li, Z C; Likhoded, S; Lin, C H; Lin, W T; Linde, Frank L; Lista, L; Liu, Z A; Lohmann, W; Longo, E; Lü, Y S; Luci, C; Luminari, L; Lustermann, W; Ma, W G; Ma, X H; Ma, Y Q; Malgeri, L; Malinin, A; Maña, C; Mans, J; Martin, J P; Marzano, F; Mazumdar, K; McNeil, R R; Mele, S; Meng, X W; Merola, L; Meschini, M; Metzger, W J; Mihul, A; van Mil, A; Milcent, H; Mirabelli, G; Mnich, J; Mohanty, G B; Monteleoni, B; Muanza, G S; Muijs, A J M; Musicar, B; Musy, M; Nagy, S; Nahnhauer, R; Naumov, V A; Natale, S; Napolitano, M; Nessi-Tedaldi, F; Newman, H; Nisati, A; Novák, T; Nowak, H; Ofierzynski, R A; Organtini, G; Pal, I; Palomares, C; Paolucci, P; Paramatti, R; Parriaud, J F; Passaleva, G; Patricelli, S; Paul, T; Pauluzzi, M; Paus, C; Pauss, F; Pedace, M; Pensotti, S; Perret-Gallix, D; Petersen, B; Piccolo, D; Pierella, F; Pieri, M; Pioppi, M; Piroué, P A; Pistolesi, E; Plyaskin, V; Pohl, M; Pozhidaev, V; Pothier, J; Prokofev, D; Prokofiev, D O; Quartieri, J; Qing, C R; Rahal-Callot, G; Rahaman, M A; Raics, P; Raja, N; Ramelli, R; Rancoita, P G; Ranieri, R; Raspereza, A V; Ravindran, K C; Razis, P; Ren, D; Rescigno, M; Reucroft, S; Rewiersma, P A M; Riemann, S; Riles, K; Roe, B P; Rojkov, A; Romero, L; Rosca, A; Rosemann, C; Rosenbleck, C; Rosier-Lees, S; Roth, S; Rubio, J A; Ruggiero, G; Rykaczewski, H; Saidi, R; Sakharov, A; Saremi, S; Sarkar, S; Salicio, J; Sánchez, E; Schäfer, C; Shchegelskii, V; Schmitt, V; Schöneich, B; Schopper, Herwig Franz; Schotanus, D J; Sciacca, C; Servoli, L; Shen, C Q; Shevchenko, S; Shivarov, N; Shoutko, V; Shumilov, E; Shvorob, A; Son, D; Souga, C; Spillantini, P; Steuer, M; Stickland, D P; Stoyanov, B; Strässner, A; Sudhakar, K; Sulanke, H; Sultanov, G G; Sun, L Z; Sushkov, S; Suter, H; Swain, J D; Szillási, Z; Tang, X W; Tarjan, P; Tauscher, L; Taylor, L; Tellili, B; Teyssier, D; Timmermans, C; Ting, Samuel C C; Ting, S M; Tonwar, S C; Tóth, J; Trowitzsch, G; Tully, C; Tung, K L; Ulbricht, J; Unger, M; Valente, E; Verkooijen, H; Van de Walle, R T; Vásquez, R; Veszpremi, V; Vesztergombi, G; Vetlitskii, I; Vicinanza, D; Viertel, G; Villa, S; Vivargent, M; Vlachos, S; Vodopyanov, I; Vogel, H; Vogt, H; Vorobev, I; Vorobyov, A A; Wadhwa, M; Wang, R G; Wang, Q; Wang, X L; Wang, X W; Wang, Z M; Weber, M; Van Wijk, R F; Wijnen, T A M; Wilkens, H; Wynhoff, S; Xia, L; Xu, Y P; Xu, J S; Xu, Z Z; Yang, B Z; Yang, C G; Yang, H J

    2006-01-01

    The L3+C muon detector at the Cern electron-position collider, LEP, is used for the detection of very-high-energy cosmic \\gamma-ray sources through the observation of muons of energies above 20, 30, 50 and 100 GeV. Daily or monthly excesses in the rate of single-muon events pointing to some particular direction in the sky are searched for. The periods from mid July to November 1999, and April to November 2000 are considered. Special attention is also given to a selection of known \\gamma-ray sources. No statistically significant excess is observed for any direction or any particular source.

  9. T-odd correlations in radiative K{sup +} {sub l3} decays and chiral perturbation theory

    Energy Technology Data Exchange (ETDEWEB)

    Mueller, E.H.; Kubis, B. [Universitaet Bonn, Helmholtz-Institut fuer Strahlen- und Kernphysik, Bonn (Germany); Meissner, U.G. [Universitaet Bonn, Helmholtz-Institut fuer Strahlen- und Kernphysik, Bonn (Germany); Forschungszentrum Juelich, Institut fuer Kernphysik (Theorie), Juelich (Germany)

    2006-11-15

    The charged kaon decay channel K{sup +} {sub l3{gamma}} allows for studies of direct CP violation, possibly due to non-standard mechanisms, with the help of T-odd correlation variables. In order to be able to extract a CP-violating signal from experiment, it is necessary to understand all possible standard model phases that also produce T-odd asymmetries. We complement earlier studies by considering strong interaction phases in hadronic structure functions that appear at higher orders in chiral perturbation theory, and we compare our findings to other potential sources of asymmetries. (orig.)

  10. An automated synthesis module for preparation of L-3-[123I]iodo-alpha-methyl tyrosine

    International Nuclear Information System (INIS)

    Luurtsema, Gert; Jager, Pieter L.; Piers, Albertus; Hooge, Marjolijn N. de

    2001-01-01

    L-3-[ 123 I]iodo-alpha-methyl tyrosine (IMT) is an artificial amino acid suitable for SPECT imaging of various tumours. Manual synthesis of this radiopharmaceutical is reliable, but time-consuming and may require handling of large quantities of radioactivity. We developed an automated IMT synthesis module, which prepares a ready-to-inject product that meets radiopharmaceutical requirements and is identical to the manually synthesised equivalent. Current advantages include decreased operator assistance time and reduced radiation exposure. Application may be extended to other radiopharmaceuticals, including high-dose preparations for therapeutic use

  11. Observation of a VHE Cosmic-Ray Flare-Signal with the L3+C Muon Spectrometer

    CERN Document Server

    Adriani, O; Aziz, T; Bähr, J; Banerjee, S; Becattini, F; Bellucci, L; Betev, B L; Blaising, J J; Bobbink, G J; Bottai, S; Bourilkov, D; Cartacci, A; Chemarin, M; Chen, G; Chen, G M; Chen, H S; Chiarusi, T; Coignet, G; Ding, L K; Duran, I; Eline, A; El Mamouni, H; Faber, G; Fay, J; Filthaut, F; Ganguli, S N; Gong, Z F; Grabosch, H J; Groenstege, H; Guo, Y N; Gupta, S; Gurtu, A; Haller, Ch; Hayashi, Y; He, Z X; Hebbeker, T; Herve, A; Hofer, H; Hoferjun, H; Huo, A X; Ito, N; Jing, C L; Jones, L W; Kantserov, V; Kawakami, S; Kittel, W; König, A C; Kok, E; Kuang, H H; Kuijpers, J; Ladron de Guevara, P; Le Coultre, P; Lei, Y; Leich, H; Leiste, R; Li, L; Li, Z C; Liu, Z A; Lohmann, W; Lu, Y S; Ma, W G; Ma, X H; Ma, Y Q; Mele, S; Meng, X W; Meschini, M; Metzger, W J; van Mil, A; Milcent, H; Mohanty, G B; Monteleoni, B; Nahnhauer, R; Naumov, V A; Nowak, H; Parriaud, J -F; Pauss, F; Petersen, B; Pieri, M; Pohl, M; Pojidaev, V; Qing, C R; Ramelli, R; Ranieri, R; Ravindran, K C; Rewiersma, P; Riemann, S; Rojkov, A; Romero, L; Schmitt, V; Schoeneich, B; Schotanus, D J; Shen, C Q; Spillantini, P; Sulanke, H; Tang, X W; Timmermans, C; Tonwar, S C; Trowitzsch, G; Unger, M; Verkooijen, H; Van de Walle, R T; Vogt, H; Wang, R G; Wang, Q; Wang, X L; Wang, X W; Wang, Z M; Wijk, R van; Wijnen, T A M; Wilkens, H; Xu, Y P; Xu, J S; Xu, Z Z; Yang, C G; Yang, X F; Yao, Z G; Yu, Z Q; Zhang, C; Zhang, F; Zhang, J; Zhang, S; Zhou, S J; Zhu, G Y; Zhu, Q Q; Zhuang, H L; Zwart, A N M

    2010-01-01

    The data collected by the L3+C muon spectrometer at the CERN Large Electron-Positron collider, LEP, have been used to search for short duration signals emitted by cosmic point sources. A sky survey performed from July to November 1999 and from April to November 2000 has revealed one single flux enhancement (chance probability = 2.6X10^{-3}) between the 17th and 20th of August 2000 from a direction with a galactic longitude of (265.02+-0.42)^° and latitude of (55.58+-0.24)^°. The energy of the detected muons was above 15 GeV.

  12. Roles of linguistic knowledge, metacognitive knowledge and processing speed in L3, L2 and L1 reading comprehension: a structural equation modeling approach

    NARCIS (Netherlands)

    van Gelderen, A.; Schoonen, R.; de Glopper, K.; Hulstijn, J.; Snellings, P.; Simis, A.; Stevenson, M.

    2003-01-01

    In this article we present an analysis of the relationship between L3 reading comprehension and its constituent skills for bilingual Dutch students for whom English is a third language(L3) compared to monolingual Dutch students for whom English is a second language(L2). An analogous analysis is made

  13. L2 vs. L3 Initial State: A Comparative Study of the Acquisition of French DPs by Vietnamese Monolinguals and Cantonese-English Bilinguals

    Science.gov (United States)

    Leung, Yan-Kit Ingrid

    2005-01-01

    This paper compares the initial state of second language acquisition (L2A) and third language acquisition (L3A) from the generative linguistics perspective. We examine the acquisition of the Determiner Phrase (DP) by two groups of beginning French learners: an L2 group (native speakers of Vietnamese who do not speak any English) and an L3 group…

  14. Pharmacologically induced long QT type 2 can be rescued by activation of IKs with benzodiazepine R-L3 in isolated guinea pig cardiomyocytes

    DEFF Research Database (Denmark)

    Nissen, Jakob Dahl; Diness, Jonas Goldin; Diness, Thomas Goldin

    2009-01-01

    of this study was to evaluate potential antiarrhythmic effects of compound induced IKs activation using the benzodiazepine L-364,373 (R-L3). Ventricular myocytes from guinea pigs were isolated and whole-cell current clamping was performed at 35 degrees C. It was found that 1 microM R-L3 significantly reduced...

  15. English L3 Learning in a Multilingual Context: The Role of Parental Education and L2 Exposure within the Living Community

    Science.gov (United States)

    De Angelis, Gessica

    2015-01-01

    The present study examines two factors in relation to English L3 proficiency development and school performance in a third language: (a) parental education and (b) second language exposure within the living community. Participants (n?=?50) are Italian L1 students with German L2 and English L3. All students (eighth grade, 14 years of age) were…

  16. Silicon-micromachined microchannel plates

    CERN Document Server

    Beetz, C P; Steinbeck, J; Lemieux, B; Winn, D R

    2000-01-01

    Microchannel plates (MCP) fabricated from standard silicon wafer substrates using a novel silicon micromachining process, together with standard silicon photolithographic process steps, are described. The resulting SiMCP microchannels have dimensions of approx 0.5 to approx 25 mu m, with aspect ratios up to 300, and have the dimensional precision and absence of interstitial defects characteristic of photolithographic processing, compatible with positional matching to silicon electronics readouts. The open channel areal fraction and detection efficiency may exceed 90% on plates up to 300 mm in diameter. The resulting silicon substrates can be converted entirely to amorphous quartz (qMCP). The strip resistance and secondary emission are developed by controlled depositions of thin films, at temperatures up to 1200 deg. C, also compatible with high-temperature brazing, and can be essentially hydrogen, water and radionuclide-free. Novel secondary emitters and cesiated photocathodes can be high-temperature deposite...

  17. Chalcogen donnors in silicon

    International Nuclear Information System (INIS)

    Scolfaro, L.M.R.

    1985-01-01

    The electronic stucture of chalcogen impurities in silicon which give rise to deep levels in the forbidden band gap of that semiconductor is studied. The molecular cluster model within the formalism of the multiple scattering method in the Xα local density approximation was used . The surface orbitals were treated by using the Watson sphere model. Studies were carried out for the isolated substitutional sulfur and selenium impurities (Si:S and Si:Se). A pioneer investigation was performed for the nearest-neighbor impurity pairs of sulfur and selenium (Si:S 2 and Si:Se 2 ). All the systems were also analysed in the positive charge states (Si:S + , Si:Se + and Si:Se 2 + ) and for the isolated impurities the calculations were carried out to the spin polarized limit. The obtained results were used to interpret recent photoconductivity, photocapitance, EPR and DLTS data on these centers. It was observed that the adopted model is able to provide a satisfactory description of the electronic structure of the chalcogen impurity centers in silicon. (autor) [pt

  18. Flexible silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Blakers, A.W.; Armour, T. [Centre for Sustainable Energy Systems, The Australian National University, Canberra ACT 0200 (Australia)

    2009-08-15

    In order to be useful for certain niche applications, crystalline silicon solar cells must be able to sustain either one-time flexure or multiple non-critical flexures without significant loss of strength or efficiency. This paper describes experimental characterisation of the behaviour of thin crystalline silicon solar cells, under either static or repeated flexure, by flexing samples and recording any resulting changes in performance. Thin SLIVER cells were used for the experiment. Mechanical strength was found to be unaffected after 100,000 flexures. Solar conversion efficiency remained at greater than 95% of the initial value after 100,000 flexures. Prolonged one-time flexure close to, but not below, the fracture radius resulted in no significant change of properties. For every sample, fracture occurred either on the first flexure to a given radius of curvature, or not at all when using that radius. In summary, for a given radius of curvature, either the flexed solar cells broke immediately, or they were essentially unaffected by prolonged or multiple flexing. (author)

  19. ATLAS Silicon Microstrip Tracker

    CERN Document Server

    Haefner, Petra; The ATLAS collaboration

    2010-01-01

    The SemiConductor Tracker (SCT), made up from silicon micro-strip detectors is the key precision tracking device in ATLAS, one of the experiments at CERN LHC. The completed SCT is in very good shape: 99.3% of the SCT strips are operational, noise occupancy and hit efficiency exceed the design specifications. In the talk the current status of the SCT will be reviewed. We will report on the operation of the detector and observed problems, with stress on the sensor and electronics performance. TWEPP Summary In December 2009 the ATLAS experiment at the CERN Large Hadron Collider (LHC) recorded the first proton- proton collisions at a centre-of-mass energy of 900 GeV and this was followed by the unprecedented energy of 7 TeV in March 2010. The SemiConductor Tracker (SCT) is the key precision tracking device in ATLAS, made up from silicon micro-strip detectors processed in the planar p-in-n technology. The signal from the strips is processed in the front-end ASICS ABCD3TA, working in the binary readout mode. Data i...

  20. Antigenicity of Anisakis simplex s.s. L3 in parasitized fish after heating conditions used in the canning processing.

    Science.gov (United States)

    Tejada, Margarita; Olivares, Fabiola; de las Heras, Cristina; Careche, Mercedes; Solas, María Teresa; García, María Luisa; Fernandez, Agustín; Mendizábal, Angel; Navas, Alfonso; Rodríguez-Mahillo, Ana Isabel; González-Muñoz, Miguel

    2015-03-30

    Some technological and food processing treatments applied to parasitized fish kill the Anisakis larvae and prevent infection and sensitization of consumers. However, residual allergenic activity of parasite allergens has been shown. The aim here was to study the effect of different heat treatments used in the fish canning processing industry on the antigen recognition of Anisakis L3. Bigeye tuna (Thunnus obesus) and yellowfin tuna (Thunnus albacares) were experimentally infected with live L3 Anisakis. After 48 h at 5 ± 1 °C, brine was added to the muscle, which was then canned raw (live larvae) or heated (90 °C, 30 min) (dead larvae) and treated at 113 °C for 60 min or at 115 °C for 90 min. Anisakis antigens and Ani s 4 were detected with anti-crude extract and anti-Ani s 4 antisera respectively. Ani s 4 decreased in all lots, but the muscle retained part of the allergenicity irrespective of the canning method, as observed by immunohistochemistry. Dot blot analysis showed a high loss of Ani s 4 recognition after canning, but residual antigenicity was present. The results indicate that heat treatment for sterilization under the conditions studied produces a decrease in Ani s 4 and suggest a potential exposure risk for Anisakis-sensitized patients. © 2014 Society of Chemical Industry.

  1. VLBI-simulations for the estimation of degree-three Love and Shida numbers h3 and l3

    Science.gov (United States)

    Mendes Cerveira, P. J.; Boehm, J.; Wresnik, J.; Spicakova, H.; Schuh, H.

    2007-12-01

    For the displacement due to solid Earth tides, the IERS Conventions 2003 recommend several corrections to nominal values. One of these corrections is the in-phase contribution by using the real Love and Shida numbers h3 and l3 at all degree-3 tides, where only the contribution of the moon is relevant. The maximum predicted radial displacement is in the order of 1.7 mm. The nominal values are 0.292 for h3, and 0.015 for l3, respectively. Using realistic station and source catalogues, we simulated VLBI (Very Long Baseline Interferometry) group time delays, with a white noise going up to 2 cm, and taking into account the solid Earth tides displacement. Goal of this study was to investigate whether degree-3 Love and Shida numbers can be unambiguously determined from VLBI observations. Therefore, several setups w.r.t., e.g., station constellation, cutoff angle, time span, sampling interval, and different levels of white noise were tested. Attention was put into the separability and correlation between the degree-2 and degree-3 Love and Shida numbers.

  2. Examining teachers’ views on the implementation of English as L3 into primary schools: A case of Kazakhstan

    Directory of Open Access Journals (Sweden)

    Bakhytgul A Zhetpisbayeva

    2016-06-01

    Full Text Available The Ministry of Education and Science of the Republic of Kazakhstan changed the State Educational Program for primary education and the curriculum for teaching English as a third language (L3 to grades 1-4in 2013. As with many changes in the curriculum, English language teaching has also been changed and the starting age for learning of English language has been lowered to 6-7 years of age (Grade 1. However, implementation of the curriculum requires readiness on the part of the teachers and teachers' views about teaching English in primary school is important for successful implementation of English language policy. Thus, this research aims to investigate the teachers’ views about the starting age for L3 learning, teachers' professional development, teaching materials and problems of implementation of a language policy in primary schools in Kazakhstan. The data for the study was gathered from 105 English teachers working in different primary schools. The study revealed that most have not yet made a transition to the organized system of teaching English languages in primary school.

  3. Ribosomal protein L3 mutations are associated with cfr-mediated linezolid resistance in clinical isolates of Staphylococcus cohnii.

    Science.gov (United States)

    Xu, Hongtao; Tian, Rui; Li, Yanming; Chen, Dongke; Liu, Yalin; Hu, Yunjian; Xiao, Fei

    2015-06-01

    From June, 2012 to November, 2013 five linezolid-resistant Staphylococcus cohnii isolates were identified in our hospital in Beijing, China. The investigation of the resistance mechanisms confirmed that the cfr-carrying plasmids were the main cause of linezolid resistance in those clinical isolates. Moreover, all the five isolates had ribosomal protein L3 mutations, which had different coordinate effect on cfr-mediated linezolid resistance directly through the substitution of serine 158 by phenylalanine or tyrosine in L3 protein. In this study, two types of plasmids (p432, p438) (Accession No. KM114207) were found, which share high sequence identity with previously reported cfr-carrying pRM01 and pMHZ plasmids originated from northern and southern China, showing wide regional dissemination in China. The stability of linezolid resistance was studied by passaging single colonies serially on antibiotic-free blood medium, which showed that the susceptible derivatives emerged until the passages 39-42 with the elimination of cfr-carrying plasmid. Thus the high stability of this plasmid may pose a risk for the transmission among patients or even cause an outbreak in clinical settings.

  4. Silicon microstrip detector development in the Institute for High Energy Physics Zeuthen, GDR

    International Nuclear Information System (INIS)

    Lange, W.; Nowak, W.D.; Truetzschler, K.

    1990-01-01

    This paper reports that in regard of the growing interest to study short living particles demanding for high resolution vertex detectors the authors started to build Si microstrip detectors. The first detector generation was characterized by a small area of silicon and a readout via printed circuit board fan out. Now they can assemble detectors with larger areas and VLSI readout. A special cleanroom has been built. Equipment and tools necessary are available. Silicon wafers and thick film hybrid circuits are fabricated under collaboration by the GDR industry. Applications of their detectors were several test-runs at CERN to calibrate the L3 time expansion chamber (TEC) and the L3 muon chambers. A 10-layer telescope is designed now and it is planned to calibrate a high resolution scintillation fiber target. Future applications will be high resolution vertex detectors, e.g. L3 upgrading (LEP, CERN) or KEDR (VEPP-5, Novosibirsk). Further investigations will concern AC coupled strip detectors (single and double sided) and pixel and/or pad detectors

  5. Relationship between silicon concentration and creatinine clearance

    International Nuclear Information System (INIS)

    Miura, Y.; Nakai, K.; Itoh, C.; Horikiri, J.; Sera, K.; Sato, M.

    1998-01-01

    Silicon levels in dialysis patients are markedly increasing. Using PIXE we determined the relationship between silicon concentration and creatinine clearance in 30 samples. Urine silicon concentration were significantly correlated to creatinine clearance (p<0.001). And also serum silicon concentration were significantly correlated to creatinine clearance (p<0.0001). (author)

  6. Luminescence of porous silicon doped by erbium

    International Nuclear Information System (INIS)

    Bondarenko, V.P.; Vorozov, N.N.; Dolgij, L.N.; Dorofeev, A.M.; Kazyuchits, N.M.; Leshok, A.A.; Troyanova, G.N.

    1996-01-01

    The possibility of the 1.54 μm intensive luminescence in the silicon dense porous layers, doped by erbium, with various structures is shown. Low-porous materials of both porous type on the p-type silicon and porous silicon with wood-like structure on the n + type silicon may be used for formation of light-emitting structures

  7. Apparatus for making molten silicon

    Science.gov (United States)

    Levin, Harry (Inventor)

    1988-01-01

    A reactor apparatus (10) adapted for continuously producing molten, solar grade purity elemental silicon by thermal reaction of a suitable precursor gas, such as silane (SiH.sub.4), is disclosed. The reactor apparatus (10) includes an elongated reactor body (32) having graphite or carbon walls which are heated to a temperature exceeding the melting temperature of silicon. The precursor gas enters the reactor body (32) through an efficiently cooled inlet tube assembly (22) and a relatively thin carbon or graphite septum (44). The septum (44), being in contact on one side with the cooled inlet (22) and the heated interior of the reactor (32) on the other side, provides a sharp temperature gradient for the precursor gas entering the reactor (32) and renders the operation of the inlet tube assembly (22) substantially free of clogging. The precursor gas flows in the reactor (32) in a substantially smooth, substantially axial manner. Liquid silicon formed in the initial stages of the thermal reaction reacts with the graphite or carbon walls to provide a silicon carbide coating on the walls. The silicon carbide coated reactor is highly adapted for prolonged use for production of highly pure solar grade silicon. Liquid silicon (20) produced in the reactor apparatus (10) may be used directly in a Czochralski or other crystal shaping equipment.

  8. Measurement of the B$_{d}^{0}$ meson oscillation frequency

    CERN Document Server

    Acciarri, M; Aguilar-Benítez, M; Ahlen, S P; Alpat, B; Alcaraz, J; Alemanni, G; Allaby, James V; Aloisio, A; Alverson, G; Alviggi, M G; Ambrosi, G; Anderhub, H; Andreev, V P; Angelescu, T; Antreasyan, D; Arefev, A; Azemoon, T; Aziz, T; Bagnaia, P; Baksay, L; Ball, R C; Banerjee, S; Banicz, K; Barillère, R; Barone, L; Bartalini, P; Baschirotto, A; Basile, M; Battiston, R; Bay, A; Becattini, F; Becker, U; Behner, F; Berdugo, J; Berges, P; Bertucci, B; Betev, B L; Biasini, M; Biland, A; Bilei, G M; Blaising, J J; Blyth, S C; Bobbink, Gerjan J; Böck, R K; Böhm, A; Borgia, B; Boucham, A; Bourilkov, D; Bourquin, Maurice; Boutigny, D; Brambilla, Elena; Branson, J G; Brigljevic, V; Brock, I C; Buijs, A; Burger, J D; Burger, W J; Busenitz, J K; Buytenhuijs, A O; Cai, X D; Campanelli, M; Capell, M; Cara Romeo, G; Caria, M; Carlino, G; Cartacci, A M; Casaus, J; Castellini, G; Castello, R; Cavallari, F; Cavallo, N; Cecchi, C; Cerrada-Canales, M; Cesaroni, F; Chamizo-Llatas, M; Chan, A; Chang, Y H; Chaturvedi, U K; Chemarin, M; Chen, A; Chen, G; Chen, G M; Chen, H F; Chen, H S; Chen, M; Chiefari, G; Chien, C Y; Choi, M T; Cifarelli, Luisa; Cindolo, F; Civinini, C; Clare, I; Clare, R; Cohn, H O; Coignet, G; Colijn, A P; Colino, N; Costantini, S; Cotorobai, F; de la Cruz, B; Csilling, Akos; Dai, T S; D'Alessandro, R; De Asmundis, R; De Boeck, H; Degré, A; Deiters, K; Denes, P; De Notaristefani, F; DiBitonto, Daryl; Diemoz, M; Van Dierendonck, D N; Di Lodovico, F; Dionisi, C; Dittmar, Michael; Dominguez, A; Doria, A; Dorne, I; Dova, M T; Drago, E; Duchesneau, D; Duinker, P; Durán, I; Dutta, S; Easo, S; Efremenko, Yu V; El-Mamouni, H; Engler, A; Eppling, F J; Erné, F C; Ernenwein, J P; Extermann, Pierre; Fabre, M; Faccini, R; Falciano, S; Favara, A; Fay, J; Fedin, O; Felcini, Marta; Ferguson, T; Fernández, D; Ferroni, F; Fesefeldt, H S; Fiandrini, E; Field, J H; Filthaut, Frank; Fisher, P H; Forconi, G; Fredj, L; Freudenreich, Klaus; Furetta, C; Galaktionov, Yu; Ganguli, S N; Gau, S S; Gentile, S; Gerald, J; Gheordanescu, N; Giagu, S; Goldfarb, S; Goldstein, J; Gong, Z F; Gougas, Andreas; Gratta, Giorgio; Grünewald, M W; Gupta, V K; Gurtu, A; Gutay, L J; Hangarter, K; Hartmann, B; Hasan, A; Hebbeker, T; Hervé, A; Van Hoek, W C; Hofer, H; Hoorani, H; Hou, S R; Hu, G; Ilyas, M M; Innocente, Vincenzo; Janssen, H; Jin, B N; Jones, L W; de Jong, P; Josa-Mutuberria, I; Kasser, A; Khan, R A; Kamyshkov, Yu A; Kapinos, P; Kapustinsky, J S; Karyotakis, Yu; Kaur, M; Kienzle-Focacci, M N; Kim, D; Kim, J K; Kim, S C; Kim, Y G; Kinnison, W W; Kirkby, A; Kirkby, D; Kirkby, Jasper; Kiss, D; Kittel, E W; Klimentov, A; König, A C; Korolko, I; Koutsenko, V F; Krämer, R W; Kramer, T; Krenz, W; Kuijten, H; Kunin, A; Ladrón de Guevara, P; Landi, G; Lapoint, C; Lassila-Perini, K M; Laurikainen, P; Lebeau, M; Lebedev, A; Lebrun, P; Lecomte, P; Lecoq, P; Le Coultre, P; Lee Jae Sik; Lee, K Y; Leggett, C; Le Goff, J M; Leiste, R; Lenti, M; Leonardi, E; Levchenko, P M; Li Chuan; Lieb, E H; Lin, W T; Linde, Frank L; Lista, L; Liu, Z A; Lohmann, W; Longo, E; Lu, W; Lü, Y S; Lübelsmeyer, K; Luci, C; Luckey, D; Ludovici, L; Luminari, L; Lustermann, W; Ma Wen Gan; Macchiolo, A; Maity, M; Majumder, G; Malgeri, L; Malinin, A; Maña, C; Mangla, S; Marchesini, P A; Marin, A; Martin, J P; Marzano, F; Massaro, G G G; Mazumdar, K; McNally, D; Mele, S; Merola, L; Meschini, M; Metzger, W J; Von der Mey, M; Mi, Y; Mihul, A; Van Mil, A J W; Mirabelli, G; Mnich, J; Monteleoni, B; Moore, R; Morganti, S; Mount, R; Müller, S; Muheim, F; Nagy, E; Nahn, S; Napolitano, M; Nessi-Tedaldi, F; Newman, H; Nippe, A; Nowak, H; Organtini, G; Ostonen, R; Pandoulas, D; Paoletti, S; Paolucci, P; Park, H K; Pascale, G; Passaleva, G; Patricelli, S; Paul, T; Pauluzzi, M; Paus, C; Pauss, Felicitas; Peach, D; Pei, Y J; Pensotti, S; Perret-Gallix, D; Petrak, S; Pevsner, A; Piccolo, D; Pieri, M; Pinto, J C; Piroué, P A; Pistolesi, E; Plyaskin, V; Pohl, M; Pozhidaev, V; Postema, H; Produit, N; Prokofev, D; Prokofiev, D O; Raghavan, R; Rahal-Callot, G; Rancoita, P G; Rattaggi, M; Raven, G; Razis, P A; Read, K; Ren, D; Rescigno, M; Reucroft, S; Van Rhee, T; Riemann, S; Riemers, B C; Riles, K; Rind, O; Ro, S; Robohm, A; Rodin, J; Rodríguez-Calonge, F J; Roe, B P; Röhner, S; Romero, L; Rosier-Lees, S; Rosselet, P; Van Rossum, W; Roth, S; Rubio, Juan Antonio; Rykaczewski, H; Salicio, J; Sánchez, E; Santocchia, A; Sarakinos, M E; Sarkar, S; Sassowsky, M; Sauvage, G; Schäfer, C; Shchegelskii, V; Schmidt-Kärst, S; Schmitz, D; Schmitz, P; Schneegans, M; Schöneich, B; Scholz, N; Schopper, Herwig Franz; Schotanus, D J; Schwenke, J; Schwering, G; Sciacca, C; Sciarrino, D; Sens, Johannes C; Servoli, L; Shevchenko, S; Shivarov, N; Shoutko, V; Shukla, J; Shumilov, E; Shvorob, A V; Siedenburg, T; Son, D; Sopczak, André; Soulimov, V; Smith, B; Spillantini, P; Steuer, M; Stickland, D P; Sticozzi, F; Stone, H; Stoyanov, B; Strässner, A; Strauch, K; Sudhakar, K; Sultanov, G G; Sun, L Z; Susinno, G F; Suter, H; Swain, J D; Tang, X W; Tauscher, Ludwig; Taylor, L; Ting, Samuel C C; Ting, S M; Tonisch, F; Tonutti, M; Tonwar, S C; Tóth, J; Tully, C; Tuchscherer, H; Tung, K L; Ulbricht, J; Uwer, U; Valente, E; Van de Walle, R T; Vesztergombi, G; Vetlitskii, I; Viertel, Gert M; Vivargent, M; Völkert, R; Vogel, H; Vogt, H; Vorobev, I; Vorobyov, A A; Vorvolakos, A; Wadhwa, M; Wallraff, W; Wang, J C; Wang, X L; Wang, Y F; Wang, Z M; Weber, A; Wittgenstein, F; Wu, S X; Wynhoff, S; Xu, J; Xu, Z Z; Yang, B Z; Yang, C G; Yao, X Y; Ye, J B; Yeh, S C; You, J M; Zalite, A; Zalite, Yu; Zemp, P; Zeng, Y; Zhang, Z; Zhang, Z P; Zhou, B; Zhou, Y; Zhu, G Y; Zhu, R Y; Zichichi, Antonino

    1996-01-01

    Time-dependent \\Bd-\\Bbd\\ mixing is studied using 1.5 million hadronic Z decays collected by L3. Semileptonic B decays are selected by requiring at least one reconstructed lepton in both thrust hemispheres. Charge correlations between the tagged leptons are studied as a function of proper time. The proper time of the b-hadron decay is measured by reconstructing the production and decay vertices using a silicon microvertex detector. The measured \\Bd\\ meson oscillation frequency corresponds to a mass difference \\Dmd\\ between the two \\Bd\\ mass eigenstates of \\begin{displaymath} \\Dmd = \\left( 0.496 ^{+ 0.055}_{- 0.051}\\ \\mathrm{(stat)} \\pm{ 0.043}\\ \\mathrm{(syst)} \\right)\\ \\mathrm{ps}^{-1}. \\end{displaymath}

  9. Silicon Telescope Detectors

    CERN Document Server

    Gurov, Yu B; Sandukovsky, V G; Yurkovski, J

    2005-01-01

    The results of research and development of special silicon detectors with a large active area ($> 8 cm^{2}$) for multilayer telescope spectrometers (fulfilled in the Laboratory of Nuclear Problems, JINR) are reviewed. The detector parameters are listed. The production of totally depleted surface barrier detectors (identifiers) operating under bias voltage two to three times higher than depletion voltage is described. The possibility of fabrication of lithium drifted counters with a very thin entrance window on the diffusion side of the detector (about 10--20 $\\mu$m) is shown. The detector fabrication technique has allowed minimizing detector dead regions without degradation of their spectroscopic characteristics and reliability during long time operation in charge particle beams.

  10. Silicon radiation detector

    International Nuclear Information System (INIS)

    Benc, I.; Kerhart, J.; Kopecky, J.; Krca, P.; Veverka, V.; Weidner, M.; Weinova, H.

    1992-01-01

    The silicon radiation detector, which is designed for the detection of electrons with energies above 500 eV and of radiation within the region of 200 to 1100 nm, comprises a PIN or PNN + type photodiode. The active acceptor photodiode is formed by a detector surface of shallow acceptor diffusion surrounded by a collector band of deep acceptor diffusion. The detector surface of shallow P-type diffusion with an acceptor concentration of 10 15 to 10 17 atoms/cm 3 reaches a depth of 40 to 100 nm. One sixth to one eighth of the collector band width is overlapped by the P + collector band at a width of 150 to 300 μm with an acceptor concentration of 10 20 to 10 21 atoms/cm 3 down a depth of 0.5 to 3 μm. This band is covered with a conductive layer, of NiCr for instance. (Z.S.)

  11. Zirconates heteroepitaxy on silicon

    Science.gov (United States)

    Fompeyrine, Jean; Seo, Jin Won; Seigwart, Heinz; Rossel, Christophe; Locquet, Jean-Pierre

    2002-03-01

    In the coming years, agressive scaling in CMOS technology will probably trigger the transition to more advanced materials, for example alternate gate dielectrics. Epitaxial thin films are attractive candidates, as long as the difficult chemical and structural issues can be solved, and superior properties can be obtained. Since very few binary oxides can match the electrical, physical and structural requirements which are needed, a combination of those binaries are used here to investigate other lattice matched oxides. We will report on the growth of crystalline zirconium oxide thin films stabilized with different cationic substitutions. All films have been grown in an oxide-MBE system by direct evaporation of the elements on silicon substrates and exposure to molecular or atomic oxygen. The conditions required to obtain epitaxial thin films will be discussed, and successful examples will be presented.

  12. Silicon in cereal straw

    DEFF Research Database (Denmark)

    Murozuka, Emiko

    Silicon (Si) is known to be a beneficial element for plants. However, when plant residues are to be used as feedstock for second generation bioenergy, Si may reduce the suitability of the biomass for biochemical or thermal conversion technologies. The objective of this PhD study was to investigate......, a mutant in Si influx transporter BdLsi1 was identified. BdLsi1 belongs to the major intrinsic protein family. The mutant BdLsi1 protein had an amino acid change from proline to serine in the highly conserved NPA motif. The mutation caused a defect in channeling of Si as well as other substrates...... such as germanium and arsenite. The Si concentration in the mutant plant was significantly reduced by more than 80 %. Rice mutants defective in Si transporters OsLsi1 and OsLsi2 also showed significantly lower straw Si concentration. It is concluded that the quality of straw biomass for bioenergy purposes can...

  13. Formation of porous silicon oxide from substrate-bound silicon rich silicon oxide layers by continuous-wave laser irradiation

    Science.gov (United States)

    Wang, Nan; Fricke-Begemann, Th.; Peretzki, P.; Ihlemann, J.; Seibt, M.

    2018-03-01

    Silicon nanocrystals embedded in silicon oxide that show room temperature photoluminescence (PL) have great potential in silicon light emission applications. Nanocrystalline silicon particle formation by laser irradiation has the unique advantage of spatially controlled heating, which is compatible with modern silicon micro-fabrication technology. In this paper, we employ continuous wave laser irradiation to decompose substrate-bound silicon-rich silicon oxide films into crystalline silicon particles and silicon dioxide. The resulting microstructure is studied using transmission electron microscopy techniques with considerable emphasis on the formation and properties of laser damaged regions which typically quench room temperature PL from the nanoparticles. It is shown that such regions consist of an amorphous matrix with a composition similar to silicon dioxide which contains some nanometric silicon particles in addition to pores. A mechanism referred to as "selective silicon ablation" is proposed which consistently explains the experimental observations. Implications for the damage-free laser decomposition of silicon-rich silicon oxides and also for controlled production of porous silicon dioxide films are discussed.

  14. Muonium states in silicon carbide

    International Nuclear Information System (INIS)

    Patterson, B.D.; Baumeler, H.; Keller, H.; Kiefl, R.F.; Kuendig, W.; Odermatt, W.; Schneider, J.W.; Estle, T.L.; Spencer, D.P.; Savic, I.M.

    1986-01-01

    Implanted muons in samples of silicon carbide have been observed to form paramagnetic muonium centers (μ + e - ). Muonium precession signals in low applied magnetic fields have been observed at 22 K in a granular sample of cubic β-SiC, however it was not possible to determine the hyperfine frequency. In a signal crystal sample of hexagonal 6H-SiC, three apparently isotropic muonium states were observed at 20 K and two at 300 K, all with hyperfine frequencies intermediate between those of the isotropic muonium centers in diamond and silicon. No evidence was seen of an anisotropic muonium state analogous to the Mu * state in diamond and silicon. (orig.)

  15. Characterization of Czochralski silicon detectors

    OpenAIRE

    Luukka, Panja-Riina

    2006-01-01

    This thesis describes the characterization of irradiated and non-irradiated segmented detectors made of high-resistivity (>1 kΩcm) magnetic Czochralski (MCZ) silicon. It is shown that the radiation hardness (RH) of the protons of these detectors is higher than that of devices made of traditional materials such as Float Zone (FZ) silicon or Diffusion Oxygenated Float Zone (DOFZ) silicon due to the presence of intrinsic oxygen (> 5 × 1017 cm−3). The MCZ devices therefore present an interesting ...

  16. Polycrystalline Silicon Gettered by Porous Silicon and Heavy Phosphorous Diffusion

    Institute of Scientific and Technical Information of China (English)

    LIU Zuming(刘祖明); Souleymane K Traore; ZHANG Zhongwen(张忠文); LUO Yi(罗毅)

    2004-01-01

    The biggest barrier for photovoltaic (PV) utilization is its high cost, so the key for scale PV utilization is to further decrease the cost of solar cells. One way to improve the efficiency, and therefore lower the cost, is to increase the minority carrier lifetime by controlling the material defects. The main defects in grain boundaries of polycrystalline silicon gettered by porous silicon and heavy phosphorous diffusion have been studied. The porous silicon was formed on the two surfaces of wafers by chemical etching. Phosphorous was then diffused into the wafers at high temperature (900℃). After the porous silicon and diffusion layers were removed, the minority carrier lifetime was measured by photo-conductor decay. The results show that the lifetime's minority carriers are increased greatly after such treatment.

  17. Effect of Silicon Nanowire on Crystalline Silicon Solar Cell Characteristics

    OpenAIRE

    Zahra Ostadmahmoodi Do; Tahereh Fanaei Sheikholeslami; Hassan Azarkish

    2016-01-01

    Nanowires (NWs) are recently used in several sensor or actuator devices to improve their ordered characteristics. Silicon nanowire (Si NW) is one of the most attractive one-dimensional nanostructures semiconductors because of its unique electrical and optical properties. In this paper, silicon nanowire (Si NW), is synthesized and characterized for application in photovoltaic device. Si NWs are prepared using wet chemical etching method which is commonly used as a simple and low cost method fo...

  18. Efficiency Enhancement of Silicon Solar Cells by Porous Silicon Technology

    Directory of Open Access Journals (Sweden)

    Eugenijus SHATKOVSKIS

    2012-09-01

    Full Text Available Silicon solar cells produced by a usual technology in p-type, crystalline silicon wafer were investigated. The manufactured solar cells were of total thickness 450 mm, the junction depth was of 0.5 mm – 0.7 mm. Porous silicon technologies were adapted to enhance cell efficiency. The production of porous silicon layer was carried out in HF: ethanol = 1 : 2 volume ratio electrolytes, illuminating by 50 W halogen lamps at the time of processing. The etching current was computer-controlled in the limits of (6 ÷ 14 mA/cm2, etching time was set in the interval of (10 ÷ 20 s. The characteristics and performance of the solar cells samples was carried out illuminating by Xenon 5000 K lamp light. Current-voltage characteristic studies have shown that porous silicon structures produced affect the extent of dark and lighting parameters of the samples. Exactly it affects current-voltage characteristic and serial resistance of the cells. It has shown, the formation of porous silicon structure causes an increase in the electric power created of solar cell. Conversion efficiency increases also respectively to the initial efficiency of cell. Increase of solar cell maximum power in 15 or even more percent is found. The highest increase in power have been observed in the spectral range of Dl @ (450 ÷ 850 nm, where ~ 60 % of the A1.5 spectra solar energy is located. It has been demonstrated that porous silicon technology is effective tool to improve the silicon solar cells performance.DOI: http://dx.doi.org/10.5755/j01.ms.18.3.2428

  19. Radiation resistant passivation of silicon solar cells

    International Nuclear Information System (INIS)

    Swanson, R.M.; Gan, J.Y.; Gruenbaum, P.E.

    1991-01-01

    This patent describes a silicon solar cell having improved stability when exposed to concentrated solar radiation. It comprises a body of silicon material having a major surface for receiving radiation, a plurality of p and n conductivity regions in the body for collecting electrons and holes created by impinging radiation, and a passivation layer on the major surface including a first layer of silicon oxide in contact with the body and a polycrystalline silicon layer on the first layer of silicon oxide

  20. Ag K- and L3-edge XAFS study on Ag species in Ag/Ga2O3 photocatalysts

    International Nuclear Information System (INIS)

    Yamamoto, M; Yamamoto, N; Yoshida, T; Nomoto, T; Yamamoto, A; Yoshida, H; Yagi, S

    2016-01-01

    Ag loaded Ga 2 O 3 (Ag/Ga 2 O 3 ) shows photocatalytic activity for reduction of CO 2 with water. Ag L 3 -edge XANES and K-edge EXAFS spectra were measured for various Ag/Ga 2 O 3 samples, which suggested that structural and chemical states of Ag species varied with the loading amount of Ag and the preparation method. The Ag species were metallic Ag particles with an AgGaO 2 -like interface structure in the sample with high loading amount of Ag while predominantly Ag metal clusters in the sample with low loading amount of Ag. The XANES feature just above the edge represented the interaction between the Ag species and the Ga 2 O 3 surface, showing that the Ag metal clusters had more electrons in the d -orbitals by interacting with the Ga 2 O 3 surface, which would contribute the high photocatalytic activity. (paper)

  1. Measurement of muon pair production around the Z-resonance using the L3 detector at LEP

    International Nuclear Information System (INIS)

    Timmermans, C.W.J.P.

    1992-01-01

    The Z and W ± bosons, both detected at CERN in 1983, are among the most important particles in the standard model of electro-weak interactions. Together with the massles γ, these heavy bosons are the carriers of the so-called electro-weak force. The LEP (Large Electron Positron) collider provides the opportunity of a precise measurement of the properties of the Z-boson. Its mass M Z and width Γ Z are key-parameters in the standard model. In spite of the relatively small partial width Γ μ for Z -> μ + μ - , the reaction e + e - >μ + μ - (γ) is the cleanest channel to test the standard model. The measurements of the lineshape and forward-backward asymmetry of this reaction belong to the best methods to determine g V and g A , the neutral current vector and axial vector coupling constants. Accurate measurements of M Z , Γ Z , Γ μ , g V and g A provide a stringent test of consistencies and predictions of the standard model. The measurements presented here are performed with the L 3 detector, one of the four detectors at the LEP-ring. In this thesis, first a number of aspects of the standard model are discussed. This is followed by a description of the L 3 detector, in particular the muon detector. After that the measurements are presented. Finally, the measured lineshape and asymmetry are interpreted in terms of standard model variables, and compared to standard model predictions. (author). 62 refs., 50 figs., 22 tabs

  2. Evanescent field phase shifting in a silicon nitride waveguide using a coupled silicon slab

    DEFF Research Database (Denmark)

    Jensen, Asger Sellerup; Oxenløwe, Leif Katsuo; Green, William M. J.

    2015-01-01

    An approach for electrical modulation of low-loss silicon nitride waveguides is proposed, using a silicon nitride waveguide evanescently loaded with a thin silicon slab. The thermooptic phase-shift characteristics are investigated in a racetrack resonator configuration....

  3. Imprinted silicon-based nanophotonics

    DEFF Research Database (Denmark)

    Borel, Peter Ingo; Olsen, Brian Bilenberg; Frandsen, Lars Hagedorn

    2007-01-01

    We demonstrate and optically characterize silicon-on-insulator based nanophotonic devices fabricated by nanoimprint lithography. In our demonstration, we have realized ordinary and topology-optimized photonic crystal waveguide structures. The topology-optimized structures require lateral pattern ...

  4. Ultra-fast silicon detectors

    Energy Technology Data Exchange (ETDEWEB)

    Sadrozinski, H. F.-W., E-mail: hartmut@scipp.ucsc.edu [Santa Cruz Institute for Particle Physics, UC Santa Cruz, Santa Cruz, CA 95064 (United States); Ely, S.; Fadeyev, V.; Galloway, Z.; Ngo, J.; Parker, C.; Petersen, B.; Seiden, A.; Zatserklyaniy, A. [Santa Cruz Institute for Particle Physics, UC Santa Cruz, Santa Cruz, CA 95064 (United States); Cartiglia, N.; Marchetto, F. [INFN Torino, Torino (Italy); Bruzzi, M.; Mori, R.; Scaringella, M.; Vinattieri, A. [University of Florence, Department of Physics and Astronomy, Sesto Fiorentino, Firenze (Italy)

    2013-12-01

    We propose to develop a fast, thin silicon sensor with gain capable to concurrently measure with high precision the space (∼10 μm) and time (∼10 ps) coordinates of a particle. This will open up new application of silicon detector systems in many fields. Our analysis of detector properties indicates that it is possible to improve the timing characteristics of silicon-based tracking sensors, which already have sufficient position resolution, to achieve four-dimensional high-precision measurements. The basic sensor characteristics and the expected performance are listed, the wide field of applications are mentioned and the required R and D topics are discussed. -- Highlights: •We are proposing thin pixel silicon sensors with 10's of picoseconds time resolution. •Fast charge collection is coupled with internal charge multiplication. •The truly 4-D sensors will revolutionize imaging and particle counting in many applications.

  5. Vibrational modes of porous silicon

    International Nuclear Information System (INIS)

    Sabra, M.; Naddaf, M.

    2012-01-01

    On the basis of theoretical and experimental investigations, the origin of room temperature photoluminescence (PL) from porous silicon is found to related to chemical complexes constituted the surface, in particular, SiHx, SiOx and SiOH groups. Ab initio atomic and molecular electronic structure calculations on select siloxane compounds were used for imitation of infrared (IR) spectra of porous silicon. These are compared to the IR spectra of porous silicon recorded by using Fourier Transform Infrared Spectroscopy (FTIR). In contrast to linear siloxane, the suggested circular siloxane terminated with linear siloxane structure is found to well-imitate the experimental spectra. These results are augmented with EDX (energy dispersive x-ray spectroscopy) measurements, which showed that the increase of SiOx content in porous silicon due to rapid oxidation process results in considerable decrease in PL peak intensity and a blue shift in the peak position. (author)

  6. Silicon pressure transducers: a review

    International Nuclear Information System (INIS)

    Aceves M, M.; Sandoval I, F.

    1994-01-01

    We present a review of the pressure sensors, which use the silicon piezo resistive effect and micro machining technique. Typical pressure sensors, applications, design and other different structures are presented. (Author)

  7. Scattering characteristics from porous silicon

    Directory of Open Access Journals (Sweden)

    R. Sabet-Dariani

    2000-12-01

    Full Text Available   Porous silicon (PS layers come into existance as a result of electrochemical anodization on silicon. Although a great deal of research has been done on the formation and optical properties of this material, the exact mechanism involved is not well-understood yet.   In this article, first, the optical properties of silicon and porous silicon are described. Then, previous research and the proposed models about reflection from PS and the origin of its photoluminescence are reveiwed. The reflecting and scattering, absorption and transmission of light from this material, are then investigated. These experiments include,different methods of PS sample preparation their photoluminescence, reflecting and scattering of light determining different characteristics with respect to Si bulk.

  8. Silicon Solar Cell Turns 50

    Energy Technology Data Exchange (ETDEWEB)

    Perlin, J.

    2004-08-01

    This short brochure describes a milestone in solar (or photovoltaic, PV) research-namely, the 50th anniversary of the invention of the first viable silicon solar cell by three researchers at Bell Laboratories.

  9. Method of forming buried oxide layers in silicon

    Science.gov (United States)

    Sadana, Devendra Kumar; Holland, Orin Wayne

    2000-01-01

    A process for forming Silicon-On-Insulator is described incorporating the steps of ion implantation of oxygen into a silicon substrate at elevated temperature, ion implanting oxygen at a temperature below 200.degree. C. at a lower dose to form an amorphous silicon layer, and annealing steps to form a mixture of defective single crystal silicon and polycrystalline silicon or polycrystalline silicon alone and then silicon oxide from the amorphous silicon layer to form a continuous silicon oxide layer below the surface of the silicon substrate to provide an isolated superficial layer of silicon. The invention overcomes the problem of buried isolated islands of silicon oxide forming a discontinuous buried oxide layer.

  10. Silicone nanocomposite coatings for fabrics

    Science.gov (United States)

    Eberts, Kenneth (Inventor); Lee, Stein S. (Inventor); Singhal, Amit (Inventor); Ou, Runqing (Inventor)

    2011-01-01

    A silicone based coating for fabrics utilizing dual nanocomposite fillers providing enhanced mechanical and thermal properties to the silicone base. The first filler includes nanoclusters of polydimethylsiloxane (PDMS) and a metal oxide and a second filler of exfoliated clay nanoparticles. The coating is particularly suitable for inflatable fabrics used in several space, military, and consumer applications, including airbags, parachutes, rafts, boat sails, and inflatable shelters.

  11. Quasimetallic silicon micromachined photonic crystals

    International Nuclear Information System (INIS)

    Temelkuran, B.; Bayindir, Mehmet; Ozbay, E.; Kavanaugh, J. P.; Sigalas, M. M.; Tuttle, G.

    2001-01-01

    We report on fabrication of a layer-by-layer photonic crystal using highly doped silicon wafers processed by semiconductor micromachining techniques. The crystals, built using (100) silicon wafers, resulted in an upper stop band edge at 100 GHz. The transmission and defect characteristics of these structures were found to be analogous to metallic photonic crystals. We also investigated the effect of doping concentration on the defect characteristics. The experimental results agree well with predictions of the transfer matrix method simulations

  12. Industrial Silicon Wafer Solar Cells

    OpenAIRE

    Neuhaus, Dirk-Holger; Münzer, Adolf

    2007-01-01

    In 2006, around 86% of all wafer-based silicon solar cells were produced using screen printing to form the silver front and aluminium rear contacts and chemical vapour deposition to grow silicon nitride as the antireflection coating onto the front surface. This paper reviews this dominant solar cell technology looking into state-of-the-art equipment and corresponding processes for each process step. The main efficiency losses of this type of solar cell are analyzed to demonstrate the future e...

  13. Silicon nanowires: structure and properties

    International Nuclear Information System (INIS)

    Nezhdanov, A.V.; Mashin, A.I.; Razuvaev, A.G.; Ershov, A.V.; Ignatov, S.K.

    2006-01-01

    An attempt to grow silicon nanowires has been made by electron beam evaporation on highly oriented pyrolytic substrate. Needle-like objects are located along the normal to a substrate (density 2 x 10 11 cm -2 ). For modeling quasi-one-dimensional objects calculations of nuclear structure and energy spectra have been accomplished. A fullerene-like structure Si 24 is proposed as a basic atomic configuration of silicon nanowires [ru

  14. Laser tests of silicon detectors

    International Nuclear Information System (INIS)

    Dolezal, Zdenek; Escobar, Carlos; Gadomski, Szymon; Garcia, Carmen; Gonzalez, Sergio; Kodys, Peter; Kubik, Petr; Lacasta, Carlos; Marti, Salvador; Mitsou, Vasiliki A.; Moorhead, Gareth F.; Phillips, Peter W.; Reznicek, Pavel; Slavik, Radan

    2007-01-01

    This paper collects experiences from the development of a silicon sensor laser testing setup and from tests of silicon strip modules (ATLAS End-cap SCT), pixel modules (DEPFET) and large-area diodes using semiconductor lasers. Lasers of 1060 and 680 nm wavelengths were used. A sophisticated method of focusing the laser was developed. Timing and interstrip properties of modules were measured. Analysis of optical effects involved and detailed discussion about the usability of laser testing for particle detectors are presented

  15. Delayed vertebral diagnosed L4 pincer vertebral fracture, L2-L3 ruptured vertebral lumbar disc hernia, L5 vertebral wedge fracture - Case report

    Directory of Open Access Journals (Sweden)

    Balasa D

    2016-08-01

    Full Text Available An association between delayed ruptured lumbar disc hernia, L5 vertebral wedge fracture and posttraumaticL4 pincer vertebral fracture (A2.3-AO clasification at different levels is a very rare entity. We present the case of a 55 years old male who falled down from a bicycle. 2 months later because of intense and permanent vertebral lumbar and radicular L2 and L3 pain (Visual Scal Autologus of Pain7-8/10 the patient came to the hospital. He was diagnosed with pincer vertebral L4 fracture (A2.3-AO clasification and L2-L3 right ruptured lumbar disc hernia in lateral reces. The patient was operated (L2-L3 right fenestration, and resection of lumbar disc hernia, bilateral stabilisation, L3-L4-L5 with titan screws and postero-lateral bone graft L4 bilateral harvested from iliac crest.

  16. ROV Dive Products Dataset for EX1502L3: Caribbean Exploration (ROV) on NOAA Ship Okeanos Explorer between 20150409 and 20150430

    Data.gov (United States)

    National Oceanic and Atmospheric Administration, Department of Commerce — Dataset of folders containing ROV dive products for each ROV dive performed during EX1502L3. The files within the folder are text, image, graph, comma-separated...

  17. In vivo effects of monoclonal anti-L3T4 antibody on immune responsiveness of mice infected with Schistosoma mansoni. Reduction of irradiated cercariae-induced resistance

    International Nuclear Information System (INIS)

    Kelly, E.A.; Colley, D.G.

    1988-01-01

    Mice can be partially protected against challenge infections of Schistosoma mansoni cercariae by either single or multiple exposure to irradiated cercariae (x-cerc). The participation of L3T4+ lymphocytes on this resistance phenomenon was evaluated by selectively depleting this cell population through in vivo administration of mAb anti-L3T4 at three different times in relationship to the challenge infections. Treatment with anti-L3T4 before challenge such that depletion was effective during the time of cercarial skin penetration and dermal/s.c. residence significantly reduced the level of resistance induced by x-cerc sensitization. When treatment was delayed until after challenge, depletion of L3T4+ cells coincided with either the lung or post-lung/liver phases of schistosomular migration, and normal levels of x-cerc-induced resistance were induced. In contrast to once-immunized mice, mice hyperimmunized by five exposures to x-cerc and then depleted of L3T4+ cells at the time of challenge still expressed resistance to the challenge. These data suggest that when mice are sensitized only once with x-cerc the challenge infection provides a necessary immunologic boost which requires L3T4+ cells for effective expression of resistance. The requirement for this anamnestic effect by the challenge infection can be circumvented by hyperimmunization. Evaluation of the immune response of one-time sensitized or hyperimmunized mice demonstrated that cellular Ag-specific proliferative responses and mitogen-induced lymphokine production were abrogated after any of the various in vivo regimens of anti-L3T4 antibody. In contrast, immunoblot analysis of humoral responsiveness revealed a correlation between the expression of resistance and the ability of sera from immunized and anti-L3T4 treated mice to recognize a 75-kDa parasite antigenic component

  18. Simulating Ru L3-edge X-ray absorption spectroscopy with time-dependent density functional theory: model complexes and electron localization in mixed-valence metal dimers.

    Science.gov (United States)

    Van Kuiken, Benjamin E; Valiev, Marat; Daifuku, Stephanie L; Bannan, Caitlin; Strader, Matthew L; Cho, Hana; Huse, Nils; Schoenlein, Robert W; Govind, Niranjan; Khalil, Munira

    2013-05-30

    Ruthenium L3-edge X-ray absorption (XA) spectroscopy probes unoccupied 4d orbitals of the metal atom and is increasingly being used to investigate the local electronic structure in ground and excited electronic states of Ru complexes. The simultaneous development of computational tools for simulating Ru L3-edge spectra is crucial for interpreting the spectral features at a molecular level. This study demonstrates that time-dependent density functional theory (TDDFT) is a viable and predictive tool for simulating ruthenium L3-edge XA spectroscopy. We systematically investigate the effects of exchange correlation functional and implicit and explicit solvent interactions on a series of Ru(II) and Ru(III) complexes in their ground and electronic excited states. The TDDFT simulations reproduce all of the experimentally observed features in Ru L3-edge XA spectra within the experimental resolution (0.4 eV). Our simulations identify ligand-specific charge transfer features in complicated Ru L3-edge spectra of [Ru(CN)6](4-) and Ru(II) polypyridyl complexes illustrating the advantage of using TDDFT in complex systems. We conclude that the B3LYP functional most accurately predicts the transition energies of charge transfer features in these systems. We use our TDDFT approach to simulate experimental Ru L3-edge XA spectra of transition metal mixed-valence dimers of the form [(NC)5M(II)-CN-Ru(III)(NH3)5](-) (where M = Fe or Ru) dissolved in water. Our study determines the spectral signatures of electron delocalization in Ru L3-edge XA spectra. We find that the inclusion of explicit solvent molecules is necessary for reproducing the spectral features and the experimentally determined valencies in these mixed-valence complexes. This study validates the use of TDDFT for simulating Ru 2p excitations using popular quantum chemistry codes and providing a powerful interpretive tool for equilibrium and ultrafast Ru L3-edge XA spectroscopy.

  19. Direct Production of Silicones From Sand

    Energy Technology Data Exchange (ETDEWEB)

    Larry N. Lewis; F.J. Schattenmann: J.P. Lemmon

    2001-09-30

    Silicon, in the form of silica and silicates, is the second most abundant element in the earth's crust. However the synthesis of silicones (scheme 1) and almost all organosilicon chemistry is only accessible through elemental silicon. Silicon dioxide (sand or quartz) is converted to chemical-grade elemental silicon in an energy intensive reduction process, a result of the exceptional thermodynamic stability of silica. Then, the silicon is reacted with methyl chloride to give a mixture of methylchlorosilanes catalyzed by cooper containing a variety of tract metals such as tin, zinc etc. The so-called direct process was first discovered at GE in 1940. The methylchlorosilanes are distilled to purify and separate the major reaction components, the most important of which is dimethyldichlorosilane. Polymerization of dimethyldichlorosilane by controlled hydrolysis results in the formation of silicone polymers. Worldwide, the silicones industry produces about 1.3 billion pounds of the basic silicon polymer, polydimethylsiloxane.

  20. Enhanced Raman scattering in porous silicon grating.

    Science.gov (United States)

    Wang, Jiajia; Jia, Zhenhong; Lv, Changwu

    2018-03-19

    The enhancement of Raman signal on monocrystalline silicon gratings with varying groove depths and on porous silicon grating were studied for a highly sensitive surface enhanced Raman scattering (SERS) response. In the experiment conducted, porous silicon gratings were fabricated. Silver nanoparticles (Ag NPs) were then deposited on the porous silicon grating to enhance the Raman signal of the detective objects. Results show that the enhancement of Raman signal on silicon grating improved when groove depth increased. The enhanced performance of Raman signal on porous silicon grating was also further improved. The Rhodamine SERS response based on Ag NPs/ porous silicon grating substrates was enhanced relative to the SERS response on Ag NPs/ porous silicon substrates. Ag NPs / porous silicon grating SERS substrate system achieved a highly sensitive SERS response due to the coupling of various Raman enhancement factors.

  1. Silicon Photomultiplier charaterization

    Science.gov (United States)

    Munoz, Leonel; Osornio, Leo; Para, Adam

    2014-03-01

    Silicon Photo Multiples (SiPM's) are relatively new photon detectors. They offer many advantages compared to photo multiplier tubes (PMT's) such as insensitivity to magnetic field, robustness at varying lighting levels, and low cost. The SiPM output wave forms are poorly understood. The experiment conducted collected waveforms of responses of Hamamatsu SiPM to incident laser pulse at varying temperatures and bias voltages. Ambient noise was characterized at all temperatures and bias voltages by averaging the waveforms. Pulse shape of the SiPM response was determined under different operating conditions: the pulse shape is nearly independent of the bias voltage but exhibits strong variation with temperature, consistent with the temperature variation of the quenching resistor. Amplitude of responses of the SiPM to low intensity laser light shows many peaks corresponding to the detection of 1,2,3 etc. photons. Amplitude of these pulses depends linearly on the bias voltage, enabling determination of the breakdown voltage at each temperature. Poisson statistics has been used to determine the average number of detected photons at each operating conditions. Department of Education Grant No. P0315090007 and the Department of Energy/ Fermi National Accelerator Laboratory.

  2. Collimation: a silicon solution

    CERN Multimedia

    2007-01-01

    Silicon crystals could be used very efficiently to deflect high-energy beams. Testing at CERN has produced conclusive results, which could pave the way for a new generation of collimators. The set of five crystals used to test the reflection of the beams. The crystals are 0.75 mm wide and their alignment is adjusted with extreme precision. This figure shows the deflection of a beam by channelling and by reflection in the block of five crystals. Depending on the orientation of the crystals: 1) The beam passes without "seeing" the crystals and is not deflected 2) The beam is deflected by channelling (with an angle of around 100 μrad) 3) The beam is reflected (with an angle of around 50 μrad). The intensity of the deflected beam is illustrated by the intensity of the spot. The spot of the reflected beam is clearly more intense than that one of the channelled beam, demonstrating the efficiency of t...

  3. Next generation structural silicone glazing

    Directory of Open Access Journals (Sweden)

    Charles D. Clift

    2015-06-01

    Full Text Available This paper presents an advanced engineering evaluation, using nonlinear analysis of hyper elastic material that provides significant improvement to structural silicone glazing (SSG design in high performance curtain wall systems. Very high cladding wind pressures required in hurricane zones often result in bulky SSG profile dimensions. Architectural desire for aesthetically slender curtain wall framing sight-lines in combination with a desire to reduce aluminium usage led to optimization of silicone material geometry for better stress distribution.To accomplish accurate simulation of predicted behaviour under structural load, robust stress-strain curves of the silicone material are essential. The silicone manufacturer provided physical property testing via a specialized laboratory protocol. A series of rigorous curve fit techniques were then made to closely model test data in the finite element computer analysis that accounts for nonlinear strain of hyper elastic silicone.Comparison of this advanced design technique to traditional SSG design highlights differences in stress distribution contours in the silicone material. Simplified structural engineering per the traditional SSG design method does not provide accurate forecasting of material and stress optimization as shown in the advanced design.Full-scale specimens subject to structural load testing were performed to verify the design capacity, not only for high wind pressure values, but also for debris impact per ASTM E1886 and ASTM E1996. Also, construction of the test specimens allowed development of SSG installation techniques necessitated by the unique geometry of the silicone profile. Finally, correlation of physical test results with theoretical simulations is made, so evaluation of design confidence is possible. This design technique will introduce significant engineering advancement to the curtain wall industry.

  4. Colloidal characterization of silicon nitride and silicon carbide

    Science.gov (United States)

    Feke, Donald L.

    1986-01-01

    The colloidal behavior of aqueous ceramic slips strongly affects the forming and sintering behavior and the ultimate mechanical strength of the final ceramic product. The colloidal behavior of these materials, which is dominated by electrical interactions between the particles, is complex due to the strong interaction of the solids with the processing fluids. A surface titration methodology, modified to account for this interaction, was developed and used to provide fundamental insights into the interfacial chemistry of these systems. Various powder pretreatment strategies were explored to differentiate between true surface chemistry and artifacts due to exposure history. The colloidal behavior of both silicon nitride and carbide is dominated by silanol groups on the powder surfaces. However, the colloid chemistry of silicon nitride is apparently influenced by an additional amine group. With the proper powder treatments, silicon nitride and carbide powder can be made to appear colloidally equivalent. The impact of these results on processing control will be discussed.

  5. Silicon-to-silicon wafer bonding using evaporated glass

    DEFF Research Database (Denmark)

    Weichel, Steen; Reus, Roger De; Lindahl, M.

    1998-01-01

    Anodic bending of silicon to silicon 4-in. wafers using an electron-beam evaporated glass (Schott 8329) was performed successfully in air at temperatures ranging from 200 degrees C to 450 degrees C. The composition of the deposited glass is enriched in sodium as compared to the target material....... The roughness of the as-deposited films was below 5 nm and was found to be unchanged by annealing at 500 degrees C for 1 h in air. No change in the macroscopic edge profiles of the glass film was found as a function of annealing; however, small extrusions appear when annealing above 450 degrees C. Annealing...... of silicon/glass structures in air around 340 degrees C for 15 min leads to stress-free structures. Bonded wafer pairs, however, show no reduction in stress and always exhibit compressive stress. The bond yield is larger than 95% for bonding temperatures around 350 degrees C and is above 80% for bonding...

  6. STAR-CCM+ (CFD) Calculations and Validation L3:VVI.H2L.P15.02

    Energy Technology Data Exchange (ETDEWEB)

    Gilkey, Lindsay [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

    2017-09-05

    This milestone presents a demonstration of the High-to-Low (Hi2Lo) process in the VVI focus area. Validation and additional calculations with the commercial computational fluid dynamics code, STAR-CCM+, were performed using a 5x5 fuel assembly with non-mixing geometry and spacer grids. This geometry was based on the benchmark experiment provided by Westinghouse. Results from the simulations were compared to existing experimental data and to the subchannel thermal-hydraulics code COBRA-TF (CTF). An uncertainty quantification (UQ) process was developed for the STAR-CCM+ model and results of the STAR UQ were communicated to CTF. Results from STAR-CCM+ simulations were used as experimental design points in CTF to calibrate the mixing parameter β and compared to results obtained using experimental data points. This demonstrated that CTF’s β parameter can be calibrated to match existing experimental data more closely. The Hi2Lo process for the STAR-CCM+/CTF code coupling was documented in this milestone and closely linked L3:VVI.H2LP15.01 milestone report.

  7. Search for standard and non-minimal Higgs boson at LEP2 with the L3 detector

    International Nuclear Information System (INIS)

    Teyssier, Daniel

    2002-01-01

    This thesis worked out in the frame of L3 collaboration - Higgs working group refers to the search for a Higgs signature, for center-of-mass energies between 192 and 209 GeV, one of the main goals of LEP2. It consists of a contribution to the analyses looking for the Standard Model Higgs boson, especially in the so-called 'two jets plus missing energy' channel. The final state of this channel, denoted H νν -bar, is characterized by the production of a pair of b quarks, from the decay of the Higgs particle, and a neutrino pair from that of the Z particle, for the prevalent Higgs-Strahlung process. The lower observed mass limit, obtained with the H νν -bar channel alone, is 96 GeV at a 95% confidence level. In addition, searches for neutral scalar particle production are presented, in the context of general two-Higgs-doublet models of type II, by means of a so-called 'flavor independent' analysis. Searches for 'invisible' Higgs bosons are presented as well, with the Z boson decaying into a pair of fermions while the Higgs boson decays into undetectable particles. These results permit constraining the parameters of the minimal non-universal supersymmetric models (without gaugino mass unification). (author)

  8. A Back-to-Back 2L-3L Grid Integration of a Marine Current Energy Converter

    Directory of Open Access Journals (Sweden)

    Senad Apelfröjd

    2015-01-01

    Full Text Available The paper proposes a back-to-back 2L-3L grid connection topology for a marine current energy converter. A prototype marine current energy converter has been deployed by a research group at Uppsala University. The concept behind the prototype revolves around a fixed pitch vertical axis turbine directly connected to a permanent magnet synchronous generator (PMSG. The proposed grid connection system utilizes a well known and proven two level voltage source converter generator-side combined with a three-level cascaded H-bridge (CHB multilevel converter grid-side. The multilevel converter brings benefits in terms of efficiency, power quality and DC-link utilization. The system is here presented for a single marine current energy converter but can easily be scaled up for clusters of marine current energy converters. Control schemes for both grid-side and generator-side voltage source converters are presented. The start-up, steady state and dynamic performance of the marine current energy converter are investigated and simulation results are presented in this paper.

  9. Glycosylation of phenolic compounds by the site-mutated β-galactosidase from Lactobacillus bulgaricus L3.

    Science.gov (United States)

    Lu, Lili; Xu, Lijuan; Guo, Yuchuan; Zhang, Dayu; Qi, Tingting; Jin, Lan; Gu, Guofeng; Xu, Li; Xiao, Min

    2015-01-01

    β-Galactosidases can transfer the galactosyl from lactose or galactoside donors to various acceptors and thus are especially useful for the synthesis of important glycosides. However, these enzymes have limitations in the glycosylation of phenolic compounds that have many physiological functions. In this work, the β-galactosidase from Lactobacillus bulgaricus L3 was subjected to site-saturation mutagenesis at the W980 residue. The recombinant pET-21b plasmid carrying the enzyme gene was used as the template for mutation. The mutant plasmids were transformed into Escherichia coli cells for screening. One recombinant mutant, W980F, exhibited increased yield of glycoside when using hydroquinone as the screening acceptor. The enzyme was purified and the effects of the mutation on enzyme properties were determined in detail. It showed improved transglycosylation activity on novel phenolic acceptors besides hydroquinone. The yields of the glycosides produced from phenol, hydroquinone, and catechol were increased by 7.6% to 53.1%. Moreover, it generated 32.3% glycosides from the pyrogallol that could not be glycosylated by the wild-type enzyme. Chemical structures of these glycoside products were further determined by MS and NMR analysis. Thus, a series of novel phenolic galactosides were achieved by β-galactosidase for the first time. This was a breakthrough in the enzymatic galactosylation of the challenging phenolic compounds of great values.

  10. Glycosylation of phenolic compounds by the site-mutated β-galactosidase from Lactobacillus bulgaricus L3.

    Directory of Open Access Journals (Sweden)

    Lili Lu

    Full Text Available β-Galactosidases can transfer the galactosyl from lactose or galactoside donors to various acceptors and thus are especially useful for the synthesis of important glycosides. However, these enzymes have limitations in the glycosylation of phenolic compounds that have many physiological functions. In this work, the β-galactosidase from Lactobacillus bulgaricus L3 was subjected to site-saturation mutagenesis at the W980 residue. The recombinant pET-21b plasmid carrying the enzyme gene was used as the template for mutation. The mutant plasmids were transformed into Escherichia coli cells for screening. One recombinant mutant, W980F, exhibited increased yield of glycoside when using hydroquinone as the screening acceptor. The enzyme was purified and the effects of the mutation on enzyme properties were determined in detail. It showed improved transglycosylation activity on novel phenolic acceptors besides hydroquinone. The yields of the glycosides produced from phenol, hydroquinone, and catechol were increased by 7.6% to 53.1%. Moreover, it generated 32.3% glycosides from the pyrogallol that could not be glycosylated by the wild-type enzyme. Chemical structures of these glycoside products were further determined by MS and NMR analysis. Thus, a series of novel phenolic galactosides were achieved by β-galactosidase for the first time. This was a breakthrough in the enzymatic galactosylation of the challenging phenolic compounds of great values.

  11. Inter-string Bose-Einstein correlations in hadronic Z decays using the L3 detector at LEP

    CERN Document Server

    Wang, Qin

    2008-01-01

    Bose-Einstein Correlations (BEC) of identical bosons can be used for the femtoscopy of the pro- duction properties of bosons in high energy particle collisions. This quantum mechanical BEC effect is a direct consequence of the symmetrization of the wave function of a boson system and is frequently used on photons in Astophysics to measure the angular size and other properties of distant stars. In particle collisions, the effect can be observed experimentally as an enhancement of the production of identical bosons with small four-momentum difference Q relative to a production that would occur in a world without Bose-Einstein statistics. In this thesis, BEC are studied between identical pions produced in electron-positron collisions at a center-of-mass energy of 91 GeV in the LEP e+ e− Collider of CERN, near Geneva. The final-state particles of these collisions are detected in the detector of the L3 experiment, which is positioned at one of the four intersections of LEP. According to the present picture of bo...

  12. Testing the electroweak model using semileptonic decays of b quarks in the L3 detector at LEP

    International Nuclear Information System (INIS)

    Hebert, M.

    1992-01-01

    The partial decay width Γ bbar b for Z 0 → b bar b, the forward-backward asymmetry A bbar b , and the B 0 -bar B 0 mixing parameter χ B are determined using a sample of 430K hadronic Z 0 decay events collected by the L3 detector at LEP during 1990 and 1991. The partial width Γ cbar c and asymmetry A cbar c for charm are also determined. Heavy quarks are tagged via their semileptonic decays into high momentum and high p perpendicular muons or electrons. The decay lepton's charge is used to determine the charge of the parent quark. An unbinned, maximum-likelihood fit to the two-dimensional p and p perpendicular distributions in single-lepton events and the four-dimensional p and p perpendicular distributions for dilepton events yields the values Γ bbar b = 382 ± 3 (stat) ± (sys) GeV; Γ cbar c = 293 ± 10 (stat) ± 98 (sys) GeV A bbar b = 0.090 ± 0.015 (stat) ± 0.007 (sys); A cbar c = 0.083 ± 0.038 (stat) ± 0.027 (sys) and χ B = 0.124 ± 0.017 (stat) ± 0.010 (sys). All of these values are seen to be consistent with Standard Model expectations

  13. Search for Exclusive B Decays to J and $\\eta$ or $\\pi^{0}$ with the L3 Detector

    CERN Document Server

    Acciarri, M; Aguilar-Benítez, M; Ahlen, S P; Alpat, B; Alcaraz, J; Alemanni, G; Allaby, James V; Aloisio, A; Alverson, G; Alviggi, M G; Ambrosi, G; Anderhub, H; Andreev, V P; Angelescu, T; Anselmo, F; Antreasyan, D; Arefev, A; Azemoon, T; Aziz, T; Bagnaia, P; Baksay, L; Ball, R C; Banerjee, S; Banicz, K; Barillère, R; Barone, L; Bartalini, P; Baschirotto, A; Basile, M; Battiston, R; Bay, A; Becattini, F; Becker, U; Behner, F; Berdugo, J; Berges, P; Bertucci, B; Betev, B L; Bhattacharya, S; Biasini, M; Biland, A; Bilei, G M; Blaising, J J; Blyth, S C; Bobbink, Gerjan J; Böck, R K; Böhm, A; Borgia, B; Boucham, A; Bourilkov, D; Bourquin, Maurice; Boutigny, D; Branson, J G; Brigljevic, V; Brock, I C; Buffini, A; Buijs, A; Burger, J D; Burger, W J; Busenitz, J K; Buytenhuijs, A O; Cai, X D; Campanelli, M; Capell, M; Cara Romeo, G; Caria, M; Carlino, G; Cartacci, A M; Casaus, J; Castellini, G; Cavallari, F; Cavallo, N; Cecchi, C; Cerrada-Canales, M; Cesaroni, F; Chamizo-Llatas, M; Chan, A; Chang, Y H; Chaturvedi, U K; Chemarin, M; Chen, A; Chen, G; Chen, G M; Chen, H F; Chen, H S; Chen, M; Chiefari, G; Chien, C Y; Choi, M T; Cifarelli, Luisa; Cindolo, F; Civinini, C; Clare, I; Clare, R; Cohn, H O; Coignet, G; Colijn, A P; Colino, N; Commichau, V; Costantini, S; Cotorobai, F; de la Cruz, B; Csilling, Akos; Dai, T S; D'Alessandro, R; De Asmundis, R; De Boeck, H; Degré, A; Deiters, K; Denes, P; De Notaristefani, F; DiBitonto, Daryl; Diemoz, M; Van Dierendonck, D N; Di Lodovico, F; Dionisi, C; Dittmar, Michael; Dominguez, A; Doria, A; Dorne, I; Dova, M T; Drago, E; Duchesneau, D; Duinker, P; Durán, I; Dutta, S; Easo, S; Efremenko, Yu V; El-Mamouni, H; Engler, A; Eppling, F J; Erné, F C; Ernenwein, J P; Extermann, Pierre; Fabre, M; Faccini, R; Falciano, S; Favara, A; Fay, J; Fedin, O; Felcini, Marta; Fenyi, B; Ferguson, T; Fernández, D; Ferroni, F; Fesefeldt, H S; Fiandrini, E; Field, J H; Filthaut, Frank; Fisher, P H; Forconi, G; Fredj, L; Freudenreich, Klaus; Furetta, C; Galaktionov, Yu; Ganguli, S N; García-Abia, P; Gau, S S; Gentile, S; Gerald, J; Gheordanescu, N; Giagu, S; Goldfarb, S; Goldstein, J; Gong, Z F; Gougas, Andreas; Gratta, Giorgio; Grünewald, M W; Gupta, V K; Gurtu, A; Gutay, L J; Hartmann, B; Hasan, A; Hatzifotiadou, D; Hebbeker, T; Hervé, A; Van Hoek, W C; Hofer, H; Hoorani, H; Hou, S R; Hu, G; Innocente, Vincenzo; Janssen, H; Jenkes, K; Jin, B N; Jones, L W; de Jong, P; Josa-Mutuberria, I; Kasser, A; Khan, R A; Kamrad, D; Kamyshkov, Yu A; Kapustinsky, J S; Karyotakis, Yu; Kaur, M; Kienzle-Focacci, M N; Kim, D; Kim, J K; Kim, S C; Kim, Y G; Kinnison, W W; Kirkby, A; Kirkby, D; Kirkby, Jasper; Kiss, D; Kittel, E W; Klimentov, A; König, A C; Korolko, I; Koutsenko, V F; Krämer, R W; Krenz, W; Kuijten, H; Kunin, A; Ladrón de Guevara, P; Landi, G; Lapoint, C; Lassila-Perini, K M; Laurikainen, P; Lebeau, M; Lebedev, A; Lebrun, P; Lecomte, P; Lecoq, P; Le Coultre, P; Lee Jae Sik; Lee, K Y; Leggett, C; Le Goff, J M; Leiste, R; Leonardi, E; Levchenko, P M; Li Chuan; Lieb, E H; Lin, W T; Linde, Frank L; Lista, L; Liu, Z A; Lohmann, W; Longo, E; Lu, W; Lü, Y S; Lübelsmeyer, K; Luci, C; Luckey, D; Luminari, L; Lustermann, W; Ma Wen Gan; Maity, M; Majumder, G; Malgeri, L; Malinin, A; Maña, C; Mangla, S; Marchesini, P A; Marin, A; Martin, J P; Marzano, F; Massaro, G G G; McNally, D; Mele, S; Merola, L; Meschini, M; Metzger, W J; Von der Mey, M; Mi, Y; Mihul, A; Van Mil, A J W; Mirabelli, G; Mnich, J; Molnár, P; Monteleoni, B; Moore, R; Morganti, S; Moulik, T; Mount, R; Müller, S; Muheim, F; Nagy, E; Nahn, S; Napolitano, M; Nessi-Tedaldi, F; Newman, H; Nippe, A; Nisati, A; Nowak, H; Opitz, H; Organtini, G; Ostonen, R; Pandoulas, D; Paoletti, S; Paolucci, P; Park, H K; Pascale, G; Passaleva, G; Patricelli, S; Paul, T; Pauluzzi, M; Paus, C; Pauss, Felicitas; Peach, D; Pei, Y J; Pensotti, S; Perret-Gallix, D; Petrak, S; Pevsner, A; Piccolo, D; Pieri, M; Pinto, J C; Piroué, P A; Pistolesi, E; Plyaskin, V; Pohl, M; Pozhidaev, V; Postema, H; Produit, N; Prokofev, D; Prokofiev, D O; Rahal-Callot, G; Rancoita, P G; Rattaggi, M; Raven, G; Razis, P A; Read, K; Ren, D; Rescigno, M; Reucroft, S; Van Rhee, T; Riemann, S; Riemers, B C; Riles, K; Rind, O; Ro, S; Robohm, A; Rodin, J; Rodríguez-Calonge, F J; Roe, B P; Romero, L; Rosier-Lees, S; Rosselet, P; Van Rossum, W; Roth, S; Rubio, Juan Antonio; Rykaczewski, H; Salicio, J; Sánchez, E; Santocchia, A; Sarakinos, M E; Sarkar, S; Sassowsky, M; Sauvage, G; Schäfer, C; Shchegelskii, V; Schmidt-Kärst, S; Schmitz, D; Schmitz, P; Schneegans, M; Schöneich, B; Scholz, N; Schopper, Herwig Franz; Schotanus, D J; Schwenke, J; Schwering, G; Sciacca, C; Sciarrino, D; Sens, Johannes C; Servoli, L; Shevchenko, S; Shivarov, N; Shoutko, V; Shukla, J; Shumilov, E; Shvorob, A V; Siedenburg, T; Son, D; Sopczak, André; Soulimov, V; Smith, B; Spillantini, P; Steuer, M; Stickland, D P; Stone, H; Stoyanov, B; Strässner, A; Strauch, K; Sudhakar, K; Sultanov, G G; Sun, L Z; Susinno, G F; Suter, H; Swain, J D; Tang, X W; Tauscher, Ludwig; Taylor, L; Ting, Samuel C C; Ting, S M; Tonutti, M; Tonwar, S C; Tóth, J; Tully, C; Tuchscherer, H; Tung, K L; Uchida, Y; Ulbricht, J; Uwer, U; Valente, E; Van de Walle, R T; Vesztergombi, G; Vetlitskii, I; Viertel, Gert M; Vivargent, M; Völkert, R; Vogel, H; Vogt, H; Vorobev, I; Vorobyov, A A; Vorvolakos, A; Wadhwa, M; Wallraff, W; Wang, J C; Wang, X L; Wang, Z M; Weber, A; Wittgenstein, F; Wu, S X; Wynhoff, S; Xu, J; Xu, Z Z; Yang, B Z; Yang, C G; Yao, X Y; Ye, J B; Yeh, S C; You, J M; Zalite, A; Zalite, Yu; Zemp, P; Zeng, Y; Zhang, Z; Zhang, Z P; Zhou, B; Zhou, Y; Zhu, G Y; Zhu, R Y; Zichichi, Antonino; Ziegler, F

    1997-01-01

    A search for exclusive decays of $\\ensuremath{\\mathrm{B_d^0}}$ and $\\ensuremath{\\mathrm{B_s^0}}$ mesons has been performed in the channels $\\ensuremath{\\mathrm{B_d^0}\\rightarrow\\mathrm{J}\\eta}$,\\,\\, $\\ensuremath{\\mathrm{B_s^0}\\rightarrow\\mathrm{J}\\eta}$,\\,\\, $\\ensuremath{\\mathrm{B_d^0}\\rightarrow\\mathrm{J}\\pi^0}$ and $\\ensuremath{\\mathrm{B_s^0}\\rightarrow\\mathrm{J}\\pi^0}$. The data sample consisted of more than three and half million hadronic $\\ensuremath{\\mathrm {Z}}$ decays collected by the L3 experiment at LEP from 1991 through 1995. No candidate events have been observed for any of the modes thus determining upper limits at 90\\% confidence level: $3.2\\times 10^{-4}$ on $\\mathrm{Br}(\\ensuremath{\\mathrm{B_d^0}\\ rightarrow\\mathrm{J}\\pi^0)}$ and the first experimental limits: \\begin{eqnarray*} \\mathrm{Br}(\\ensuremath{\\mathrm{B_d^0}\\rightarrow \\mathrm{J}\\eta}) & < & 1.2\\times 10^{-3},\\\\ \\mathrm{Br}(\\ensuremath{\\m athrm{B_s^0}\\rightarrow\\mathrm{J}\\eta}) & < & 3.8\\times 10^{-3},\\\\ \\mathrm{B...

  14. Silicon-micromachined microchannel plates

    International Nuclear Information System (INIS)

    Beetz, Charles P.; Boerstler, Robert; Steinbeck, John; Lemieux, Bryan; Winn, David R.

    2000-01-01

    Microchannel plates (MCP) fabricated from standard silicon wafer substrates using a novel silicon micromachining process, together with standard silicon photolithographic process steps, are described. The resulting SiMCP microchannels have dimensions of ∼0.5 to ∼25 μm, with aspect ratios up to 300, and have the dimensional precision and absence of interstitial defects characteristic of photolithographic processing, compatible with positional matching to silicon electronics readouts. The open channel areal fraction and detection efficiency may exceed 90% on plates up to 300 mm in diameter. The resulting silicon substrates can be converted entirely to amorphous quartz (qMCP). The strip resistance and secondary emission are developed by controlled depositions of thin films, at temperatures up to 1200 deg. C, also compatible with high-temperature brazing, and can be essentially hydrogen, water and radionuclide-free. Novel secondary emitters and cesiated photocathodes can be high-temperature deposited or nucleated in the channels or the first strike surface. Results on resistivity, secondary emission and gain are presented

  15. Implantation damage in silicon devices

    International Nuclear Information System (INIS)

    Nicholas, K.H.

    1977-01-01

    Ion implantation, is an attractive technique for producing doped layers in silicon devices but the implantation process involves disruption of the lattice and defects are formed, which can degrade device properties. Methods of minimizing such damage are discussed and direct comparisons made between implantation and diffusion techniques in terms of defects in the final devices and the electrical performance of the devices. Defects are produced in the silicon lattice during implantation but they are annealed to form secondary defects even at room temperature. The annealing can be at a low temperature ( 0 C) when migration of defects in silicon in generally small, or at high temperature when they can grow well beyond the implanted region. The defect structures can be complicated by impurity atoms knocked into the silicon from surface layers by the implantation. Defects can also be produced within layers on top of the silicon and these can be very important in device fabrication. In addition to affecting the electrical properties of the final device, defects produced during fabrication may influence the chemical properties of the materials. The use of these properties to improve devices are discussed as well as the degradation they can cause. (author)

  16. Kandungan L-3, 4-dihydroxyphenylalanine Suatu Bahan Neuroprotektif pada Biji Koro Benguk (Mucuna pruriens Segar, Rebus, dan Tempe (L-3,4-DIHYDROXYPHENYLALANINE CONTENT AS A NEUROPROTECTIVE MATERIAL ON FRESH, COOKED AND FERMENTED OF KORO BENGUK (MUCUNA PR

    Directory of Open Access Journals (Sweden)

    Tri Wahyu Pangestiningsih

    2017-04-01

    Full Text Available Indonesia is rich in flora potentially used for herbal medication. One of the potential herbal is koro benguk (Mucuna pruriens beans, where in Central Java and Yogyakarta is proccessed into tempe (fermented mucuna beans for daily human consumption. Koro benguk has high level of L-3,4-dihydroxyphenylalanine (L-DOPA which has a potential neuroprotective effect on Parkinson’s disease. The aim of this study was to investigate the L-DOPA content in fresh beans, cooked and fermented of koro benguk beans. The investigation were done in fresh mucuna beans, white color (BR D and black color (BR A beans originated from Wonogiri, Central Java, and fresh, white color (KP C, cooked, and fermented beans collected from Kulon Progo, Yogyakarta. The samples were extracted using ethanol and n-propanol solutions and were analyzed using high-performance liquid chromatography (HPLC technique. The results show that the highest L-DOPA level (8,56% was found in fresh white koro benguk beans from Wonogiri extracted using ethanol. The lowest L-DOPA level (0,016% was found in fermented beans that extracted using n-propanol. Extraction using ethanol yield a higher L-DOPA level as compared to that of using n-propanol. In brief, all of the samples starting from fresh bean, cooked, and fermented koro benguk beans contain L-DOPA, with highest L-DOPA level was found in the white fresh koro benguk beans, from Wonogiri, Central Java. The lowest ingredient L-DOPA level was found in the fermented beans from Kulon Progo, Yogyakarta. ABSTRAK Indonesia sangat kaya dengan keanekaragaman flora yang potensial untuk terapi herbal, salah satunya tanaman koro benguk (Mucuna pruriens yang bijinya bisa diolah menjadi tempe sebagai konsumsi harian masyarakat di sekitar Yogyakarta dan Jawa Tengah. Biji koro benguk diketahui mengandung L-3,4-dihydroxyphenylalanine (L-DOPA tinggi dan berpotensi menjadi agen neuroprotektor pada penyakit Parkinson. Penelitian ini bertujuan untuk menguji

  17. Characterization of antigen-specific, Ia-restricted, L3T4+ cytolytic T lymphocytes and assessment of thymic influence on their self specificity

    International Nuclear Information System (INIS)

    Golding, H.; Munitz, T.I.; Singer, A.

    1985-01-01

    The goals of the present study were: (a) to generate antigen-specific L3T4+ cytolytic T lymphocytes (CTL), (b) to determine their major histocompatibility complex (MHC) restriction specificity, and (c) to assess the influence of thymic MHC determinants on their self specificity. The authors found that L3T4+ CTL specific for either trinitrophenyl (TNP)-modified self determinants or minor histocompatibility antigens could be generated from Lyt-2- responder T cells provided that the response cultures were supplemented with supernatants rich in helper factors. Such antigen-specific L3T4+ CTL were Ia-restricted by the criteria that they lysed only Ia+ target cells and that their lysis of Ia+ target cells was specifically inhibited by anti-Ia monoclonal antibodies. The relative frequency of L3T4+ pCTL was found to be only 5-10% of the total anti-TNP pCTL present in the spleens of normal mice. Finally, the authors utilized radiation bone marrow chimeras to assess the influence of the thymic haplotype on the self-Ia specificity of L3T4+ CTL. Both bulk culture and limiting dilution experiments revealed that the self-Ia specificity of L3T4+ anti-TNP CTL from F1----parent and A----B allogeneic chimeras was not markedly skewed toward the haplotype of the chimeric thymus. These results contrast with those obtained previously for L3T4+ anti-TNP Th cells and demonstrate that in the radiation bone marrow chimera model of T cell differentiation, the self specificity of Th cells but not pCTL is markedly influenced by the haplotype of the chimeric thymus

  18. Flexible Thermoelectric Generators on Silicon Fabric

    KAUST Repository

    Sevilla, Galo T.

    2012-01-01

    In this work, the development of a Thermoelectric Generator on Flexible Silicon Fabric is explored to extend silicon electronics for flexible platforms. Low cost, easily deployable plastic based flexible electronics are of great interest for smart

  19. Porous silicon carbide (SIC) semiconductor device

    Science.gov (United States)

    Shor, Joseph S. (Inventor); Kurtz, Anthony D. (Inventor)

    1996-01-01

    Porous silicon carbide is fabricated according to techniques which result in a significant portion of nanocrystallites within the material in a sub 10 nanometer regime. There is described techniques for passivating porous silicon carbide which result in the fabrication of optoelectronic devices which exhibit brighter blue luminescence and exhibit improved qualities. Based on certain of the techniques described porous silicon carbide is used as a sacrificial layer for the patterning of silicon carbide. Porous silicon carbide is then removed from the bulk substrate by oxidation and other methods. The techniques described employ a two-step process which is used to pattern bulk silicon carbide where selected areas of the wafer are then made porous and then the porous layer is subsequently removed. The process to form porous silicon carbide exhibits dopant selectivity and a two-step etching procedure is implemented for silicon carbide multilayers.

  20. The LHCb Silicon Tracker Project

    International Nuclear Information System (INIS)

    Agari, M.; Bauer, C.; Baumeister, D.; Blouw, J.; Hofmann, W.; Knoepfle, K.T.; Loechner, S.; Schmelling, M.; Pugatch, V.; Bay, A.; Carron, B.; Frei, R.; Jiminez-Otero, S.; Tran, M.-T.; Voss, H.; Adeva, B.; Esperante, D.; Lois, C.; Vasquez, P.; Bernhard, R.P.; Bernet, R.; Ermoline, Y.; Gassner, J.; Koestner, S.; Lehner, F.; Needham, M.; Siegler, M.; Steinkamp, O.; Straumann, U.; Vollhardt, A.; Volyanskyy, D.

    2006-01-01

    Two silicon strip detectors, the Trigger Tracker(TT) and the Inner Tracker(Italy) will be constructed for the LHCb experiment. Transverse momentum information extracted from the TT will be used in the Level 1 trigger. The IT is part of the main tracking system behind the magnet. Both silicon detectors will be read out using a custom-developed chip by the ASIC lab in Heidelberg. The signal-over-noise behavior and performance of various geometrical designs of the silicon sensors, in conjunction with the Beetle read-out chip, have been extensively studied in test beam experiments. Results from those experiments are presented, and have been used in the final choice of sensor geometry

  1. A silicon tracker for Christmas

    CERN Multimedia

    2008-01-01

    The CMS experiment installed the world’s largest silicon tracker just before Christmas. Marcello Mannelli: physicist and deputy CMS project leader, and Alan Honma, physicist, compare two generations of tracker: OPAL for the LEP (at the front) and CMS for the LHC (behind). There is quite a difference between 1m2 and 205m2.. CMS received an early Christmas present on 18 December when the silicon tracker was installed in the heart of the CMS magnet. The CMS tracker team couldn’t have hoped for a better present. Carefully wrapped in shiny plastic, the world’s largest silicon tracker arrived at Cessy ready for installation inside the CMS magnet on 18 December. This rounded off the year for CMS with a major event, the crowning touch to ten years of work on the project by over five hundred scientists and engineers. "Building a scientific instrument of this size and complexity is a huge technical a...

  2. Belle II silicon vertex detector

    Energy Technology Data Exchange (ETDEWEB)

    Adamczyk, K. [H. Niewodniczanski Institute of Nuclear Physics, Krakow 31-342 (Poland); Aihara, H. [Department of Physics, University of Tokyo, Tokyo 113-0033 (Japan); Angelini, C. [Dipartimento di Fisica, Università di Pisa, I-56127 Pisa (Italy); INFN Sezione di Pisa, I-56127 Pisa (Italy); Aziz, T.; Babu, V. [Tata Institute of Fundamental Research, Mumbai 400005 (India); Bacher, S. [H. Niewodniczanski Institute of Nuclear Physics, Krakow 31-342 (Poland); Bahinipati, S. [Indian Institute of Technology Bhubaneswar, Satya Nagar (India); Barberio, E.; Baroncelli, Ti.; Baroncelli, To. [School of Physics, University of Melbourne, Melbourne, Victoria 3010 (Australia); Basith, A.K. [Indian Institute of Technology Madras, Chennai 600036 (India); Batignani, G. [Dipartimento di Fisica, Università di Pisa, I-56127 Pisa (Italy); INFN Sezione di Pisa, I-56127 Pisa (Italy); Bauer, A. [Institute of High Energy Physics, Austrian Academy of Sciences, 1050 Vienna (Austria); Behera, P.K. [Indian Institute of Technology Madras, Chennai 600036 (India); Bergauer, T. [Institute of High Energy Physics, Austrian Academy of Sciences, 1050 Vienna (Austria); Bettarini, S. [Dipartimento di Fisica, Università di Pisa, I-56127 Pisa (Italy); INFN Sezione di Pisa, I-56127 Pisa (Italy); Bhuyan, B. [Indian Institute of Technology Guwahati, Assam 781039 (India); Bilka, T. [Faculty of Mathematics and Physics, Charles University, 121 16 Prague (Czech Republic); Bosi, F. [INFN Sezione di Pisa, I-56127 Pisa (Italy); Bosisio, L. [Dipartimento di Fisica, Università di Trieste, I-34127 Trieste (Italy); INFN Sezione di Trieste, I-34127 Trieste (Italy); and others

    2016-09-21

    The Belle II experiment at the SuperKEKB collider in Japan is designed to indirectly probe new physics using approximately 50 times the data recorded by its predecessor. An accurate determination of the decay-point position of subatomic particles such as beauty and charm hadrons as well as a precise measurement of low-momentum charged particles will play a key role in this pursuit. These will be accomplished by an inner tracking device comprising two layers of pixelated silicon detector and four layers of silicon vertex detector based on double-sided microstrip sensors. We describe herein the design, prototyping and construction efforts of the Belle-II silicon vertex detector.

  3. The CMS silicon strip tracker

    International Nuclear Information System (INIS)

    Focardi, E.; Albergo, S.; Angarano, M.; Azzi, P.; Babucci, E.; Bacchetta, N.; Bader, A.; Bagliesi, G.; Bartalini, P.; Basti, A.; Biggeri, U.; Bilei, G.M.; Bisello, D.; Boemi, D.; Bosi, F.; Borrello, L.; Bozzi, C.; Braibant, S.; Breuker, H.; Bruzzi, M.; Candelori, A.; Caner, A.; Castaldi, R.; Castro, A.; Catacchini, E.; Checcucci, B.; Ciampolini, P.; Civinini, C.; Creanza, D.; D'Alessandro, R.; Da Rold, M.; Demaria, N.; De Palma, M.; Dell'Orso, R.; Marina, R. Della; Dutta, S.; Eklund, C.; Elliott-Peisert, A.; Feld, L.; Fiore, L.; French, M.; Freudenreich, K.; Fuertjes, A.; Giassi, A.; Giraldo, A.; Glessing, B.; Gu, W.H.; Hall, G.; Hammerstrom, R.; Hebbeker, T.; Hrubec, J.; Huhtinen, M.; Kaminsky, A.; Karimaki, V.; Koenig, St.; Krammer, M.; Lariccia, P.; Lenzi, M.; Loreti, M.; Luebelsmeyer, K.; Lustermann, W.; Maettig, P.; Maggi, G.; Mannelli, M.; Mantovani, G.; Marchioro, A.; Mariotti, C.; Martignon, G.; Evoy, B. Mc; Meschini, M.; Messineo, A.; My, S.; Paccagnella, A.; Palla, F.; Pandoulas, D.; Parrini, G.; Passeri, D.; Pieri, M.; Piperov, S.; Potenza, R.; Raffaelli, F.; Raso, G.; Raymond, M.; Santocchia, A.; Schmitt, B.; Selvaggi, G.; Servoli, L.; Sguazzoni, G.; Siedling, R.; Silvestris, L.; Skog, K.; Starodumov, A.; Stavitski, I.; Stefanini, G.; Tempesta, P.; Tonelli, G.; Tricomi, A.; Tuuva, T.; Vannini, C.; Verdini, P.G.; Viertel, G.; Xie, Z.; Wang, Y.; Watts, S.; Wittmer, B.

    1999-01-01

    The Silicon Strip Tracker (SST) is the intermediate part of the CMS Central Tracker System. SST is based on microstrip silicon devices and in combination with pixel detectors and the Microstrip Gas Chambers aims at performing pattern recognition, track reconstruction and momentum measurements for all tracks with p T ≥2 GeV/c originating from high luminosity interactions at √s=14 TeV at LHC. We aim at exploiting the advantages and the physics potential of the precise tracking performance provided by the microstrip silicon detectors on a large scale apparatus and in a much more difficult environment than ever. In this paper we describe the actual SST layout and the readout system. (author)

  4. Waveguide silicon nitride grating coupler

    Science.gov (United States)

    Litvik, Jan; Dolnak, Ivan; Dado, Milan

    2016-12-01

    Grating couplers are one of the most used elements for coupling of light between optical fibers and photonic integrated components. Silicon-on-insulator platform provides strong confinement of light and allows high integration. In this work, using simulations we have designed a broadband silicon nitride surface grating coupler. The Fourier-eigenmode expansion and finite difference time domain methods are utilized in design optimization of grating coupler structure. The fully, single etch step grating coupler is based on a standard silicon-on-insulator wafer with 0.55 μm waveguide Si3N4 layer. The optimized structure at 1550 nm wavelength yields a peak coupling efficiency -2.6635 dB (54.16%) with a 1-dB bandwidth up to 80 nm. It is promising way for low-cost fabrication using complementary metal-oxide- semiconductor fabrication process.

  5. The effect of silicon crystallographic orientation on the formation of silicon nanoclusters during anodic electrochemical etching

    International Nuclear Information System (INIS)

    Timokhov, D. F.; Timokhov, F. P.

    2009-01-01

    Possible ways for increasing the photoluminescence quantum yield of porous silicon layers have been investigated. The effect of the anodization parameters on the photoluminescence properties for porous silicon layers formed on silicon substrates with different crystallographic orientations was studied. The average diameters for silicon nanoclusters are calculated from the photoluminescence spectra of porous silicon. The influence of the substrate crystallographic orientation on the photoluminescence quantum yield of porous silicon is revealed. A model explaining the effect of the substrate orientation on the photoluminescence properties for the porous silicon layers formed by anode electrochemical etching is proposed.

  6. Surface Effects in Segmented Silicon Sensors

    OpenAIRE

    Kopsalis, Ioannis

    2017-01-01

    Silicon detectors in Photon Science and Particle Physics require silicon sensors with very demanding specifications. New accelerators like the European X-ray Free Electron Laser (EuXFEL) and the High Luminosity upgrade of the Large Hadron Collider (HL-LHC), pose new challenges for silicon sensors, especially with respect to radiation hardness. High radiation doses and fluences damage the silicon crystal and the SiO2 layers at the surface, thus changing the sensor properties and limiting their...

  7. Semiconducting silicon nanowires for biomedical applications

    CERN Document Server

    Coffer, JL

    2014-01-01

    Biomedical applications have benefited greatly from the increasing interest and research into semiconducting silicon nanowires. Semiconducting Silicon Nanowires for Biomedical Applications reviews the fabrication, properties, and applications of this emerging material. The book begins by reviewing the basics, as well as the growth, characterization, biocompatibility, and surface modification, of semiconducting silicon nanowires. It goes on to focus on silicon nanowires for tissue engineering and delivery applications, including cellular binding and internalization, orthopedic tissue scaffol

  8. Silicon Photonics Cloud (SiCloud)

    DEFF Research Database (Denmark)

    DeVore, P. T. S.; Jiang, Y.; Lynch, M.

    2015-01-01

    Silicon Photonics Cloud (SiCloud.org) is the first silicon photonics interactive web tool. Here we report new features of this tool including mode propagation parameters and mode distribution galleries for user specified waveguide dimensions and wavelengths.......Silicon Photonics Cloud (SiCloud.org) is the first silicon photonics interactive web tool. Here we report new features of this tool including mode propagation parameters and mode distribution galleries for user specified waveguide dimensions and wavelengths....

  9. Silicon photonics for multicore fiber communication

    DEFF Research Database (Denmark)

    Ding, Yunhong; Kamchevska, Valerija; Dalgaard, Kjeld

    2016-01-01

    We review our recent work on silicon photonics for multicore fiber communication, including multicore fiber fan-in/fan-out, multicore fiber switches towards reconfigurable optical add/drop multiplexers. We also present multicore fiber based quantum communication using silicon devices.......We review our recent work on silicon photonics for multicore fiber communication, including multicore fiber fan-in/fan-out, multicore fiber switches towards reconfigurable optical add/drop multiplexers. We also present multicore fiber based quantum communication using silicon devices....

  10. Simulation of atomistic processes during silicon oxidation

    OpenAIRE

    Bongiorno, Angelo

    2003-01-01

    Silicon dioxide (SiO2) films grown on silicon monocrystal (Si) substrates form the gate oxides in current Si-based microelectronics devices. The understanding at the atomic scale of both the silicon oxidation process and the properties of the Si(100)-SiO2 interface is of significant importance in state-of-the-art silicon microelectronics manufacturing. These two topics are intimately coupled and are both addressed in this theoretical investigation mainly through first-principles calculations....

  11. Thermophysical spectroscopy of defect states in silicon

    International Nuclear Information System (INIS)

    Igamberdyev, Kh.T.; Mamadalimov, A.T.; Khabibullaev, P.K.

    1989-01-01

    The present work deals with analyzing the possibilities of using the non-traditional thermophysical methods to study a defect structure in silicon. For this purpose, the temperature dependences of thermophysical properties of defect silicon are investigated. A number of new, earlier unknown physical phenomena in silicon are obtained, and their interpretation has enabled one to establish the main physical mechanisms of formation of deep defect states in silicon

  12. Laser wafering for silicon solar

    International Nuclear Information System (INIS)

    Friedmann, Thomas Aquinas; Sweatt, William C.; Jared, Bradley Howell

    2011-01-01

    Current technology cuts solar Si wafers by a wire saw process, resulting in 50% 'kerf' loss when machining silicon from a boule or brick into a wafer. We want to develop a kerf-free laser wafering technology that promises to eliminate such wasteful wire saw processes and achieve up to a ten-fold decrease in the g/W p (grams/peak watt) polysilicon usage from the starting polysilicon material. Compared to today's technology, this will also reduce costs (∼20%), embodied energy, and green-house gas GHG emissions (∼50%). We will use short pulse laser illumination sharply focused by a solid immersion lens to produce subsurface damage in silicon such that wafers can be mechanically cleaved from a boule or brick. For this concept to succeed, we will need to develop optics, lasers, cleaving, and high throughput processing technologies capable of producing wafers with thicknesses < 50 (micro)m with high throughput (< 10 sec./wafer). Wafer thickness scaling is the 'Moore's Law' of silicon solar. Our concept will allow solar manufacturers to skip entire generations of scaling and achieve grid parity with commercial electricity rates. Yet, this idea is largely untested and a simple demonstration is needed to provide credibility for a larger scale research and development program. The purpose of this project is to lay the groundwork to demonstrate the feasibility of laser wafering. First, to design and procure on optic train suitable for producing subsurface damage in silicon with the required damage and stress profile to promote lateral cleavage of silicon. Second, to use an existing laser to produce subsurface damage in silicon, and third, to characterize the damage using scanning electron microscopy and confocal Raman spectroscopy mapping.

  13. Laser wafering for silicon solar.

    Energy Technology Data Exchange (ETDEWEB)

    Friedmann, Thomas Aquinas; Sweatt, William C.; Jared, Bradley Howell

    2011-03-01

    Current technology cuts solar Si wafers by a wire saw process, resulting in 50% 'kerf' loss when machining silicon from a boule or brick into a wafer. We want to develop a kerf-free laser wafering technology that promises to eliminate such wasteful wire saw processes and achieve up to a ten-fold decrease in the g/W{sub p} (grams/peak watt) polysilicon usage from the starting polysilicon material. Compared to today's technology, this will also reduce costs ({approx}20%), embodied energy, and green-house gas GHG emissions ({approx}50%). We will use short pulse laser illumination sharply focused by a solid immersion lens to produce subsurface damage in silicon such that wafers can be mechanically cleaved from a boule or brick. For this concept to succeed, we will need to develop optics, lasers, cleaving, and high throughput processing technologies capable of producing wafers with thicknesses < 50 {micro}m with high throughput (< 10 sec./wafer). Wafer thickness scaling is the 'Moore's Law' of silicon solar. Our concept will allow solar manufacturers to skip entire generations of scaling and achieve grid parity with commercial electricity rates. Yet, this idea is largely untested and a simple demonstration is needed to provide credibility for a larger scale research and development program. The purpose of this project is to lay the groundwork to demonstrate the feasibility of laser wafering. First, to design and procure on optic train suitable for producing subsurface damage in silicon with the required damage and stress profile to promote lateral cleavage of silicon. Second, to use an existing laser to produce subsurface damage in silicon, and third, to characterize the damage using scanning electron microscopy and confocal Raman spectroscopy mapping.

  14. Alpha-fetoprotein-L3 and Golgi protein 73 may serve as candidate biomarkers for diagnosing alpha-fetoprotein-negative hepatocellular carcinoma

    Directory of Open Access Journals (Sweden)

    Zhang ZG

    2015-12-01

    Full Text Available Zhiguo Zhang,1 Yanying Zhang,2 Yeying Wang,1 Lingling Xu,3 Wanju Xu3 1Department of Clinical Laboratory, Zhangqiu Maternity and Child Care Hospital, Zhangqiu, 2Department of Clinical Laboratory, Zaozhuang City Wangkai Infection Hospital, Zaozhuang, 3Department of Clinical Laboratory, Qianfoshan Hospital, Jinan, People’s Republic of China Abstract: Currently, there is no reliable biomarker for use in diagnosing alpha-fetoprotein (AFP-negative hepatocellular carcinoma (HCC. Such a biomarker would aid in making an early diagnosis of AFP-negative HCC, ensuring the timely initiation of treatment. This study examined AFP-L3 and Golgi protein 73 (GP73 as candidate biomarkers for AFP-negative HCC. The affinity adsorption method and enzyme-linked immunoassays were separately used to determine serum levels of AFP-L3 and GP73 in 50 patients with AFP-negative HCC, 30 non-HCC patients, and 50 healthy subjects. Fifty percent of patients with AFP-negative HCC tested positive for AFP-L3, while 3.33% of non-HCC patients and 2.00% of healthy subjects were AFP-L3 positive. Patients with AFP-negative HCC had significantly higher serum levels of AFP-L3 compared to non-HCC patients and healthy individuals; however, there was no significant difference in the AFP-L3 levels of non-HCC patients and healthy subjects. Sixty-six percent of patients with AFP-negative HCC tested positive for GP73, while 10% of non-HCC patients and 0% of healthy subjects were GP73-positive. Patients with AFP-negative HCC had significantly higher serum levels of GP73 compared to non-HCC patients and healthy subjects, but there was no significant difference between the GP73 levels of non-HCC patients and healthy individuals. Moreover, 20 patients with AFP-negative HCC were both AFP-L3- and GP73-positive, while no non-HCC patients or healthy subjects tested positive for both markers. Either AFP-L3 or GP73 may be used as a biomarker for diagnosing AFP-negative HCC, while their combined use

  15. The Level of Autoantibodies Targeting Eukaryote Translation Elongation Factor 1 α1 and Ubiquitin-Conjugating Enzyme 2L3 in Nondiabetic Young Adults

    Directory of Open Access Journals (Sweden)

    Eunhee G. Kim

    2016-01-01

    Full Text Available BackgroundThe prevalence of novel type 1 diabetes mellitus (T1DM antibodies targeting eukaryote translation elongation factor 1 alpha 1 autoantibody (EEF1A1-AAb and ubiquitin-conjugating enzyme 2L3 autoantibody (UBE2L3-AAb has been shown to be negatively correlated with age in T1DM subjects. Therefore, we aimed to investigate whether age affects the levels of these two antibodies in nondiabetic subjects.MethodsEEF1A1-AAb and UBE2L3-AAb levels in nondiabetic control subjects (n=150 and T1DM subjects (n=101 in various ranges of age (18 to 69 years were measured using an enzyme-linked immunosorbent assay. The cutoff point for the presence of each autoantibody was determined based on control subjects using the formula: [mean absorbance+3×standard deviation].ResultsIn nondiabetic subjects, there were no significant correlations between age and EEF1A1-AAb and UBE2L3-AAb levels. However, there was wide variation in EEF1A1-AAb and UBE2L3-AAb levels among control subjects <40 years old; the prevalence of both EEF1A1-AAb and UBE2L3-AAb in these subjects was 4.4%. When using cutoff points determined from the control subjects <40 years old, the prevalence of both autoantibodies in T1DM subjects was decreased (EEFA1-AAb, 15.8% to 8.9%; UBE2L3-AAb, 10.9% to 7.9% when compared to the prevalence using the cutoff derived from the totals for control subjects.ConclusionThere was no association between age and EEF1A1-AAb or UBE2L3-AAb levels in nondiabetic subjects. However, the wide variation in EEF1A1-AAb and UBE2L3-AAb levels apparent among the control subjects <40 years old should be taken into consideration when determining the cutoff reference range for the diagnosis of T1DM.

  16. Vertical integration of high-Q silicon nitride microresonators into silicon-on-insulator platform.

    Science.gov (United States)

    Li, Qing; Eftekhar, Ali A; Sodagar, Majid; Xia, Zhixuan; Atabaki, Amir H; Adibi, Ali

    2013-07-29

    We demonstrate a vertical integration of high-Q silicon nitride microresonators into the silicon-on-insulator platform for applications at the telecommunication wavelengths. Low-loss silicon nitride films with a thickness of 400 nm are successfully grown, enabling compact silicon nitride microresonators with ultra-high intrinsic Qs (~ 6 × 10(6) for 60 μm radius and ~ 2 × 10(7) for 240 μm radius). The coupling between the silicon nitride microresonator and the underneath silicon waveguide is based on evanescent coupling with silicon dioxide as buffer. Selective coupling to a desired radial mode of the silicon nitride microresonator is also achievable using a pulley coupling scheme. In this work, a 60-μm-radius silicon nitride microresonator has been successfully integrated into the silicon-on-insulator platform, showing a single-mode operation with an intrinsic Q of 2 × 10(6).

  17. Extrinsic doping in silicon revisited

    KAUST Repository

    Schwingenschlögl, Udo

    2010-06-17

    Both n-type and p-type doping of silicon is at odds with the charge transfer predicted by Pauling electronegativities and can only be reconciled if we no longer regarding dopant species as isolated atoms but rather consider them as clusters consisting of the dopant and its four nearest neighbor silicon atoms. The process that gives rise to n-type and p-type effects is the charge redistribution that occurs between the dopant and its neighbors, as we illustrate here using electronic structure calculations. This view point is able to explain why conventional substitutional n-type doping of carbon has been so difficult.

  18. Extrinsic doping in silicon revisited

    KAUST Repository

    Schwingenschlö gl, Udo; Chroneos, Alexander; Grimes, R. W.; Schuster, Cosima

    2010-01-01

    Both n-type and p-type doping of silicon is at odds with the charge transfer predicted by Pauling electronegativities and can only be reconciled if we no longer regarding dopant species as isolated atoms but rather consider them as clusters consisting of the dopant and its four nearest neighbor silicon atoms. The process that gives rise to n-type and p-type effects is the charge redistribution that occurs between the dopant and its neighbors, as we illustrate here using electronic structure calculations. This view point is able to explain why conventional substitutional n-type doping of carbon has been so difficult.

  19. Large volume cryogenic silicon detectors

    International Nuclear Information System (INIS)

    Braggio, C.; Boscardin, M.; Bressi, G.; Carugno, G.; Corti, D.; Galeazzi, G.; Zorzi, N.

    2009-01-01

    We present preliminary measurements for the development of a large volume silicon detector to detect low energy and low rate energy depositions. The tested detector is a one cm-thick silicon PIN diode with an active volume of 31 cm 3 , cooled to the liquid helium temperature to obtain depletion from thermally-generated free carriers. A thorough study has been done to show that effects of charge trapping during drift disappears at a bias field value of the order of 100V/cm.

  20. Large volume cryogenic silicon detectors

    Energy Technology Data Exchange (ETDEWEB)

    Braggio, C. [Dipartimento di Fisica, Universita di Padova, via Marzolo 8, 35131 Padova (Italy); Boscardin, M. [Fondazione Bruno Kessler (FBK), via Sommarive 18, I-38100 Povo (Italy); Bressi, G. [INFN sez. di Pavia, via Bassi 6, 27100 Pavia (Italy); Carugno, G.; Corti, D. [INFN sez. di Padova, via Marzolo 8, 35131 Padova (Italy); Galeazzi, G. [INFN lab. naz. Legnaro, viale dell' Universita 2, 35020 Legnaro (Italy); Zorzi, N. [Fondazione Bruno Kessler (FBK), via Sommarive 18, I-38100 Povo (Italy)

    2009-12-15

    We present preliminary measurements for the development of a large volume silicon detector to detect low energy and low rate energy depositions. The tested detector is a one cm-thick silicon PIN diode with an active volume of 31 cm{sup 3}, cooled to the liquid helium temperature to obtain depletion from thermally-generated free carriers. A thorough study has been done to show that effects of charge trapping during drift disappears at a bias field value of the order of 100V/cm.

  1. Production of silicon carbide bodies

    International Nuclear Information System (INIS)

    Parkinson, K.

    1981-01-01

    A body consisting essentially of a coherent mixture of silicon carbide and carbon for subsequent siliconising is produced by casting a slip comprising silicon carbide and carbon powders in a porous mould. Part of the surface of the body, particularly internal features, is formed by providing within the mould a core of a material which retains its shape while casting is in progress but is compressed by shrinkage of the cast body as it dries and is thereafter removable from the cast body. Materials which are suitable for the core are expanded polystyrene and gelatinous products of selected low elastic modulus. (author)

  2. High-End Silicon PDICs

    Directory of Open Access Journals (Sweden)

    H. Zimmermann

    2008-05-01

    Full Text Available An overview on integrated silicon photodiodes and photodiode integrated circuits (PDICs or optoelectronic integrated circuits (OEICs for optical storage systems (OSS and fiber receivers is given. It is demonstrated, that by using low-cost silicon technologies high-performance OEICs being true competitors for some III/V-semiconductor OEICs can be realized. OSS-OEICs with bandwidths of up to 380 MHz and fiber receivers with maximum data rates of up to 11 Gbps are described. Low-cost data comm receivers for plastic optical fibers (POF as well as new circuit concepts for OEICs and highly parallel optical receivers are described also in the following.

  3. Radiation damage in silicon detectors

    CERN Document Server

    Lindström, G

    2003-01-01

    Radiation damage effects in silicon detectors under severe hadron and gamma-irradiation are surveyed, focusing on bulk effects. Both macroscopic detector properties (reverse current, depletion voltage and charge collection) as also the underlying microscopic defect generation are covered. Basic results are taken from the work done in the CERN-RD48 (ROSE) collaboration updated by results of recent work. Preliminary studies on the use of dimerized float zone and Czochralski silicon as detector material show possible benefits. An essential progress in the understanding of the radiation-induced detector deterioration had recently been achieved in gamma irradiation, directly correlating defect analysis data with the macroscopic detector performance.

  4. High yield silicon carbide prepolymers

    International Nuclear Information System (INIS)

    Baney, R.H.

    1982-01-01

    Prepolymers which exhibit good handling properties, and are useful for preparing ceramics, silicon carbide ceramic materials and articles containing silicon carbide, are polysilanes consisting of 0 to 60 mole% (CH 3 ) 2 Si units and 40 to 100 mole% CH 3 Si units, all Si valences being satisfied by CH 3 groups, other Si atoms, or by H atoms, the latter amounting to 0.3 to 2.1 weight% of the polysilane. They are prepared by reducing the corresponding chloro- or bromo-polysilanes with at least the stoichiometric amount of a reducing agent, e.g. LiAlH 4 . (author)

  5. Surface Passivation for Silicon Heterojunction Solar Cells

    NARCIS (Netherlands)

    Deligiannis, D.

    2017-01-01

    Silicon heterojunction solar cells (SHJ) are currently one of the most promising solar cell technologies in the world. The SHJ solar cell is based on a crystalline silicon (c-Si) wafer, passivated on both sides with a thin intrinsic hydrogenated amorphous silicon (a-Si:H) layer. Subsequently, p-type

  6. Silicon Alloying On Aluminium Based Alloy Surface

    International Nuclear Information System (INIS)

    Suryanto

    2002-01-01

    Silicon alloying on surface of aluminium based alloy was carried out using electron beam. This is performed in order to enhance tribological properties of the alloy. Silicon is considered most important alloying element in aluminium alloy, particularly for tribological components. Prior to silicon alloying. aluminium substrate were painted with binder and silicon powder and dried in a furnace. Silicon alloying were carried out in a vacuum chamber. The Silicon alloyed materials were assessed using some techniques. The results show that silicon alloying formed a composite metal-non metal system in which silicon particles are dispersed in the alloyed layer. Silicon content in the alloyed layer is about 40% while in other place is only 10.5 %. The hardness of layer changes significantly. The wear properties of the alloying alloys increase. Silicon surface alloying also reduced the coefficient of friction for sliding against a hardened steel counter face, which could otherwise be higher because of the strong adhesion of aluminium to steel. The hardness of the silicon surface alloyed material dropped when it underwent a heating cycle similar to the ion coating process. Hence, silicon alloying is not a suitable choice for use as an intermediate layer for duplex treatment

  7. Highly efficient silicon light emitting diode

    NARCIS (Netherlands)

    Le Minh, P.; Holleman, J.; Wallinga, Hans

    2002-01-01

    In this paper, we describe the fabrication, using standard silicon processing techniques, of silicon light-emitting diodes (LED) that efficiently emit photons with energy around the silicon bandgap. The improved efficiency had been explained by the spatial confinement of charge carriers due to a

  8. Engineering piezoresistivity using biaxially strained silicon

    DEFF Research Database (Denmark)

    Pedersen, Jesper Goor; Richter, Jacob; Brandbyge, Mads

    2008-01-01

    of the piezocoefficient on temperature and dopant density is altered qualitatively for strained silicon. In particular, we find that a vanishing temperature coefficient may result for silicon with grown-in biaxial tensile strain. These results suggest that strained silicon may be used to engineer the iezoresistivity...

  9. Process Research on Polycrystalline Silicon Material (PROPSM)

    Science.gov (United States)

    Culik, J. S.; Wrigley, C. Y.

    1985-01-01

    Results of hydrogen-passivated polycrysalline silicon solar cell research are summarized. The short-circuit current of solar cells fabricated from large-grain cast polycrystalline silicon is nearly equivalent to that of single-crystal cells, which indicates long bulk minority-carrier diffusion length. Treatments with molecular hydrogen showed no effect on large-grain cast polycrystalline silicon solar cells.

  10. ePIXfab - The silicon photonics platform

    NARCIS (Netherlands)

    Khanna, A.; Drissi, Y.; Dumon, P.; Baets, R.; Absil, P.; Pozo Torres, J.M.; Lo Cascio, D.M.R.; Fournier, M.; Fedeli, J.M.; Fulbert, L.; Zimmermann, L.; Tillack, B.; Aalto, T.; O'Brien, P.; Deptuck, D.; Xu, J.; Gale, D.

    2013-01-01

    ePIXfab-The European Silicon Photonics Support Center continues to provide state-of-the-art silicon photonics solutions to academia and industry for prototyping and research. ePIXfab is a consortium of EU research centers providing diverse expertise in the silicon photonics food chain, from training

  11. Silicon-Based Nanoscale Composite Energetic Materials

    Science.gov (United States)

    2013-02-01

    1193-1211. 9. Krishnamohan, G., E.M. Kurian, and H.R. Rao, Thermal Analysis and Inverse Burning Rate Studies on Silicon-Potassium Nitrate System...reported in a journal paper and appears in the Appendix. Multiscale Nanoporous Silicon Combustion Introduction for nanoporous silicon effort While

  12. Process of preparing tritiated porous silicon

    Science.gov (United States)

    Tam, Shiu-Wing

    1997-01-01

    A process of preparing tritiated porous silicon in which porous silicon is equilibrated with a gaseous vapor containing HT/T.sub.2 gas in a diluent for a time sufficient for tritium in the gas phase to replace hydrogen present in the pore surfaces of the porous silicon.

  13. Porous silicon: X-rays sensitivity

    International Nuclear Information System (INIS)

    Gerstenmayer, J.L.; Vibert, Patrick; Mercier, Patrick; Rayer, Claude; Hyvernage, Michel; Herino, Roland; Bsiesy, Ahmad

    1994-01-01

    We demonstrate that high porosity anodically porous silicon is radioluminescent. Interests of this study are double. Firstly: is the construction of porous silicon X-rays detectors (imagers) possible? Secondly: is it necessary to protect silicon porous based optoelectronic systems from ionising radiations effects (spatial environment)? ((orig.))

  14. Formation and photoluminescence of "Cauliflower" silicon nanoparticles

    NARCIS (Netherlands)

    Tang, W.; Eilers, J.J.; Huis, van M.A.; Wang, D.; Schropp, R.E.I.; Vece, Di M.

    2015-01-01

    The technological advantages of silicon make silicon nanoparticles, which can be used as quantum dots in a tandem configuration, highly relevant for photovoltaics. However, producing a silicon quantum dot solar cell structure remains a challenge. Here we use a gas aggregation cluster source to

  15. Silicon vertex detector for superheavy elements identification

    Directory of Open Access Journals (Sweden)

    Bednarek A.

    2012-07-01

    Full Text Available Silicon vertex detector for superheavy elements (SHE identification has been proposed. It will be constructed using very thin silicon detectors about 5 μm thickness. Results of test of 7.3 μm four inch silicon strip detector (SSD with fission fragments and α particles emitted by 252Cf source are presented

  16. Measurement of the topological and hadronic decay branching fractions of the tau lepton with the L3 detector at LEP

    CERN Document Server

    Guo Ming Chen

    2001-01-01

    Using the data collected with the L3 detector at LEP during 1992-1995 run at the Z/sup 0/ peak, corresponding to an integrated luminosity of 92.63 pb/sup -1/, the topological and hadronic tau decay branching fractions are measured. Photon conversion, fake photon and backlash tracks are studied and rejected in the analysis. The decay channels are identified using a set of neural networks. The topological tau decay branching fractions are B( tau to 1-prong) =85.14+or-0.27+or-0.17%, B( to 3-prong)=14.63+or-0.13+or-0.10% and B( tau to 5-prong)=0.23+or-0.01+or-0.05%. The branching fractions of tau hadronic decays are determined: BR( tau to h nu )= (12.51+or-0.12+or-0.13)%, BR( tau to h pi /sup 0/ nu )= (25.38+or-0.18+or-0.14)%, BR( tau to h/sup 2/ pi /sup 0/ nu )= (8.98+or-0.21+or-0.19)%, BR( tau to 3 pi /sup 0/ nu )= (1.77+or-0.14+or-0.15)%, BR( tau to 3h nu )=(9.11+or-0.15+or-0.08)%, BR( tau to 3h pi /sup 0/ nu )=(4.77+or-0.19+or-0.10)%, BR( tau to 3h >or=2 pi /sup 0/ nu )=(0.45+or-0.10+or-0.11)%, where the firs...

  17. Indentation fatigue in silicon nitride, alumina and silicon carbide ...

    Indian Academy of Sciences (India)

    Unknown

    carbide ceramics. A K MUKHOPADHYAY. Central Glass and Ceramic Research Institute, Kolkata 700 032, India. Abstract. Repeated indentation fatigue (RIF) experiments conducted on the same spot of different structural ceramics viz. a hot pressed silicon nitride (HPSN), sintered alumina of two different grain sizes viz.

  18. Ordered silicon nanostructures for silicon-based photonics devices

    Czech Academy of Sciences Publication Activity Database

    Fojtík, A.; Valenta, J.; Pelant, Ivan; Kálal, M.; Fiala, P.

    2007-01-01

    Roč. 5, Suppl. (2007), S250-S253 ISSN 1671-7694 R&D Projects: GA AV ČR IAA1010316 Grant - others:GA MŠk(CZ) ME 933 Institutional research plan: CEZ:AV0Z10100521 Keywords : nanocrystals * silicon * self-assembled monolayers Subject RIV: BM - Solid Matter Physics ; Magnetism

  19. Liquid phase epitaxial growth of silicon on porous silicon for photovoltaic applications

    International Nuclear Information System (INIS)

    Berger, S.; Quoizola, S.; Fave, A.; Kaminski, A.; Perichon, S.; Barbier, D.; Laugier, A.

    2001-01-01

    The aim of this experiment is to grow a thin silicon layer ( 2 atmosphere, and finally LPE silicon growth with different temperature profiles in order to obtain a silicon layer on the sacrificial porous silicon (p-Si). We observed a pyramidal growth on the surface of the (100) porous silicon but the coalescence was difficult to obtain. However, on a p-Si (111) oriented wafer, homogeneous layers were obtained. (orig.)

  20. 1366 Project Silicon: Reclaiming US Silicon PV Leadership

    Energy Technology Data Exchange (ETDEWEB)

    Lorenz, Adam [1366 Technologies, Bedford, MA (United States)

    2016-02-16

    1366 Technologies’ Project Silicon addresses two of the major goals of the DOE’s PV Manufacturing Initiative Part 2 program: 1) How to reclaim a strong silicon PV manufacturing presence and; 2) How to lower the levelized cost of electricity (“LCOE”) for solar to $0.05-$0.07/kWh, enabling wide-scale U.S. market adoption. To achieve these two goals, US companies must commercialize disruptive, high-value technologies that are capable of rapid scaling, defensible from foreign competition, and suited for US manufacturing. These are the aims of 1366 Technologies Direct Wafer ™ process. The research conducted during Project Silicon led to the first industrial scaling of 1366’s Direct Wafer™ process – an innovative, US-friendly (efficient, low-labor content) manufacturing process that destroys the main cost barrier limiting silicon PV cost-reductions: the 35-year-old grand challenge of making quality wafers (40% of the cost of modules) without the cost and waste of sawing. The SunPath program made it possible for 1366 Technologies to build its demonstration factory, a key and critical step in the Company’s evolution. The demonstration factory allowed 1366 to build every step of the process flow at production size, eliminating potential risk and ensuring the success of the Company’s subsequent scaling for a 1 GW factory to be constructed in Western New York in 2016 and 2017. Moreover, the commercial viability of the Direct Wafer process and its resulting wafers were established as 1366 formed key strategic partnerships, gained entry into the $8B/year multi-Si wafer market, and installed modules featuring Direct Wafer products – the veritable proving grounds for the technology. The program also contributed to the development of three Generation 3 Direct Wafer furnaces. These furnaces are the platform for copying intelligently and preparing our supply chain – large-scale expansion will not require a bigger machine but more machines. SunPath filled the

  1. The Polycomb Group Protein L3MBTL1 Represses a SMAD5-Mediated Hematopoietic Transcriptional Program in Human Pluripotent Stem Cells

    Directory of Open Access Journals (Sweden)

    Fabiana Perna

    2015-04-01

    Full Text Available Epigenetic regulation of key transcriptional programs is a critical mechanism that controls hematopoietic development, and, thus, aberrant expression patterns or mutations in epigenetic regulators occur frequently in hematologic malignancies. We demonstrate that the Polycomb protein L3MBTL1, which is monoallelically deleted in 20q- myeloid malignancies, represses the ability of stem cells to drive hematopoietic-specific transcriptional programs by regulating the expression of SMAD5 and impairing its recruitment to target regulatory regions. Indeed, knockdown of L3MBTL1 promotes the development of hematopoiesis and impairs neural cell fate in human pluripotent stem cells. We also found a role for L3MBTL1 in regulating SMAD5 target gene expression in mature hematopoietic cell populations, thereby affecting erythroid differentiation. Taken together, we have identified epigenetic priming of hematopoietic-specific transcriptional networks, which may assist in the development of therapeutic approaches for patients with anemia.

  2. Intermediate Bandgap Solar Cells From Nanostructured Silicon

    Energy Technology Data Exchange (ETDEWEB)

    Black, Marcie [Bandgap Engineering, Lincoln, MA (United States)

    2014-10-30

    This project aimed to demonstrate increased electronic coupling in silicon nanostructures relative to bulk silicon for the purpose of making high efficiency intermediate bandgap solar cells using silicon. To this end, we formed nanowires with controlled crystallographic orientation, small diameter, <111> sidewall faceting, and passivated surfaces to modify the electronic band structure in silicon by breaking down the symmetry of the crystal lattice. We grew and tested these silicon nanowires with <110>-growth axes, which is an orientation that should produce the coupling enhancement.

  3. Diamond deposition on siliconized stainless steel

    International Nuclear Information System (INIS)

    Alvarez, F.; Reinoso, M.; Huck, H.; Rosenbusch, M.

    2010-01-01

    Silicon diffusion layers in AISI 304 and AISI 316 type stainless steels were investigated as an alternative to surface barrier coatings for diamond film growth. Uniform 2 μm thick silicon rich interlayers were obtained by coating the surface of the steels with silicon and performing diffusion treatments at 800 deg. C. Adherent diamond films with low sp 2 carbon content were deposited on the diffused silicon layers by a modified hot filament assisted chemical vapor deposition (HFCVD) method. Characterization of as-siliconized layers and diamond coatings was performed by energy dispersive X-ray analysis, scanning electron microscopy, X-ray diffraction and Raman spectroscopy.

  4. Method For Producing Mechanically Flexible Silicon Substrate

    KAUST Repository

    Hussain, Muhammad Mustafa

    2014-08-28

    A method for making a mechanically flexible silicon substrate is disclosed. In one embodiment, the method includes providing a silicon substrate. The method further includes forming a first etch stop layer in the silicon substrate and forming a second etch stop layer in the silicon substrate. The method also includes forming one or more trenches over the first etch stop layer and the second etch stop layer. The method further includes removing the silicon substrate between the first etch stop layer and the second etch stop layer.

  5. Transmutation doping of silicon solar cells

    Science.gov (United States)

    Wood, R. F.; Westbrook, R. D.; Young, R. T.; Cleland, J. W.

    1977-01-01

    Normal isotopic silicon contains 3.05% of Si-30 which transmutes to P-31 after thermal neutron absorption, with a half-life of 2.6 hours. This reaction is used to introduce extremely uniform concentrations of phosphorus into silicon, thus eliminating the areal and spatial inhomogeneities characteristic of chemical doping. Annealing of the lattice damage in the irradiated silicon does not alter the uniformity of dopant distribution. Transmutation doping also makes it possible to introduce phosphorus into polycrystalline silicon without segregation of the dopant at the grain boundaries. The use of neutron transmutation doped (NTD) silicon in solar cell research and development is discussed.

  6. Hybrid Integrated Platforms for Silicon Photonics

    Science.gov (United States)

    Liang, Di; Roelkens, Gunther; Baets, Roel; Bowers, John E.

    2010-01-01

    A review of recent progress in hybrid integrated platforms for silicon photonics is presented. Integration of III-V semiconductors onto silicon-on-insulator substrates based on two different bonding techniques is compared, one comprising only inorganic materials, the other technique using an organic bonding agent. Issues such as bonding process and mechanism, bonding strength, uniformity, wafer surface requirement, and stress distribution are studied in detail. The application in silicon photonics to realize high-performance active and passive photonic devices on low-cost silicon wafers is discussed. Hybrid integration is believed to be a promising technology in a variety of applications of silicon photonics.

  7. Method For Producing Mechanically Flexible Silicon Substrate

    KAUST Repository

    Hussain, Muhammad Mustafa; Rojas, Jhonathan Prieto

    2014-01-01

    A method for making a mechanically flexible silicon substrate is disclosed. In one embodiment, the method includes providing a silicon substrate. The method further includes forming a first etch stop layer in the silicon substrate and forming a second etch stop layer in the silicon substrate. The method also includes forming one or more trenches over the first etch stop layer and the second etch stop layer. The method further includes removing the silicon substrate between the first etch stop layer and the second etch stop layer.

  8. Silicon on insulator self-aligned transistors

    Science.gov (United States)

    McCarthy, Anthony M.

    2003-11-18

    A method for fabricating thin-film single-crystal silicon-on-insulator (SOI) self-aligned transistors. Standard processing of silicon substrates is used to fabricate the transistors. Physical spaces, between the source and gate, and the drain and gate, introduced by etching the polysilicon gate material, are used to provide connecting implants (bridges) which allow the transistor to perform normally. After completion of the silicon substrate processing, the silicon wafer is bonded to an insulator (glass) substrate, and the silicon substrate is removed leaving the transistors on the insulator (glass) substrate. Transistors fabricated by this method may be utilized, for example, in flat panel displays, etc.

  9. Hybrid Integrated Platforms for Silicon Photonics

    Directory of Open Access Journals (Sweden)

    John E. Bowers

    2010-03-01

    Full Text Available A review of recent progress in hybrid integrated platforms for silicon photonics is presented. Integration of III-V semiconductors onto silicon-on-insulator substrates based on two different bonding techniques is compared, one comprising only inorganic materials, the other technique using an organic bonding agent. Issues such as bonding process and mechanism, bonding strength, uniformity, wafer surface requirement, and stress distribution are studied in detail. The application in silicon photonics to realize high-performance active and passive photonic devices on low-cost silicon wafers is discussed. Hybrid integration is believed to be a promising technology in a variety of applications of silicon photonics.

  10. Dispersion toughened silicon carbon ceramics

    Science.gov (United States)

    Wei, G.C.

    1984-01-01

    Fracture resistant silicon carbide ceramics are provided by incorporating therein a particulate dispersoid selected from the group consisting of (a) a mixture of boron, carbon and tungsten, (b) a mixture of boron, carbon and molybdenum, (c) a mixture of boron, carbon and titanium carbide, (d) a mixture of aluminum oxide and zirconium oxide, and (e) boron nitride. 4 figures.

  11. Reaction-bonded silicon nitride

    International Nuclear Information System (INIS)

    Porz, F.

    1982-10-01

    Reaction-bonded silicon nitride (RBSN) has been characterized. The oxidation behaviour in air up to 1500 0 C and 3000 h and the effects of static and cyclic oxidation on room-temperature strength have been studied. (orig./IHOE) [de

  12. The ARGUS silicon vertex detector

    International Nuclear Information System (INIS)

    Michel, E.; Ball, S.; Ehret, K.; Geyer, C.; Hesselbarth, J.; Hoelscher, A.; Hofmann, W.; Holzer, B.; Huepper, A.; Khan, S.; Knoepfle, K.T.; Seeger, M.; Spengler, J.; Brogle, M.; Horisberger, R.

    1994-01-01

    A silicon microstrip vertex detector has been built as an upgrade to the ARGUS detector for increased precision and efficiency in the reconstruction of decay vertices. This paper discusses the mechanical and electronic design of this device and presents first results from its successful test operation yielding an impact parameter resolution of about 18 μm. ((orig.))

  13. Impurities of oxygen in silicon

    International Nuclear Information System (INIS)

    Gomes, V.M.S.

    1985-01-01

    The electronic structure of oxygen complex defects in silicon, using molecular cluster model with saturation by watson sphere into the formalism of Xα multiple scattering method is studied. A systematic study of the simulation of perfect silicon crystal and an analysis of the increasing of atom number in the clusters are done to choose the suitable cluster for the calculations. The divacancy in three charge states (Si:V 2 + , Si:V 2 0 , Si:V 2 - ), of the oxygen pair (Si:O 2 ) and the oxygen-vacancy pair (Si:O.V) neighbours in the silicon lattice, is studied. Distortions for the symmetry were included in the Si:V 2 + and Si:O 2 systems. The behavior of defect levels related to the cluster size of Si:V 2 0 and Si:O 2 systems, the insulated oxygen impurity of silicon in interstitial position (Si:O i ), and the complexes involving four oxygen atoms are analysed. (M.C.K.) [pt

  14. Seedless electroplating on patterned silicon

    NARCIS (Netherlands)

    Vargas Llona, Laura Dolores; Jansen, Henricus V.; Elwenspoek, Michael Curt

    2006-01-01

    Nickel thin films have been electrodeposited without the use of an additional seed layer, on highly doped silicon wafers. These substrates conduct sufficiently well to allow deposition using a peripherical electrical contact on the wafer. Films 2 μm thick have been deposited using a nickel sulfamate

  15. Silicon nanowire hot carrier electroluminescence

    Energy Technology Data Exchange (ETDEWEB)

    Plessis, M. du, E-mail: monuko@up.ac.za; Joubert, T.-H.

    2016-08-31

    Avalanche electroluminescence from silicon pn junctions has been known for many years. However, the internal quantum efficiencies of these devices are quite low due to the indirect band gap nature of the semiconductor material. In this study we have used reach-through biasing and SOI (silicon-on-insulator) thin film structures to improve the internal power efficiency and the external light extraction efficiency. Both continuous silicon thin film pn junctions and parallel nanowire pn junctions were manufactured using a custom SOI technology. The pn junctions are operated in the reach-through mode of operation, thus increasing the average electric field within the fully depleted region. Experimental results of the emission spectrum indicate that the most dominant photon generating mechanism is due to intraband hot carrier relaxation processes. It was found that the SOI nanowire light source external power efficiency is at least an order of magnitude better than the comparable bulk CMOS (Complementary Metal Oxide Semiconductor) light source. - Highlights: • We investigate effect of electric field on silicon avalanche electroluminescence. • With reach-through pn junctions the current and carrier densities are kept constant. • Higher electric fields increase short wavelength radiation. • Higher electric fields decrease long wavelength radiation. • The effect of the electric field indicates intraband transitions as main mechanism.

  16. Silicon quantum dots: surface matters

    Czech Academy of Sciences Publication Activity Database

    Dohnalová, K.; Gregorkiewicz, T.; Kůsová, Kateřina

    2014-01-01

    Roč. 26, č. 17 (2014), 1-28 ISSN 0953-8984 R&D Projects: GA ČR GPP204/12/P235 Institutional support: RVO:68378271 Keywords : silicon quantum dots * quantum dot * surface chemistry * quantum confinement Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.346, year: 2014

  17. prismane structure by silicon substitution

    Indian Academy of Sciences (India)

    Using the second-order Møller–Plesset perturbation (MP2) theoretic method and the cc-pVDZ basis set, it is shown that with an increase in the number of carbon atoms substituted by silicon, the [6]-prismane structure becomes increasingly more stable, relative to the two isolated benzene (like) structures. A similar trend is ...

  18. Thermal carbonization of nanoporous silicon

    Indian Academy of Sciences (India)

    An interesting phenomenon is observed while carrying out thermal carbonization of porous silicon (PS) with an aim to arrest the natural surface degradation, and it is a burning issue for PS-based device applications. A tubular carbon structure has been observed on the PS surface. Raman, Fourier transform infrared ...

  19. The CDF Silicon Vertex Detector

    International Nuclear Information System (INIS)

    Tkaczyk, S.; Carter, H.; Flaugher, B.

    1993-01-01

    A silicon strip vertex detector was designed, constructed and commissioned at the CDF experiment at the Tevatron collider at Fermilab. The mechanical design of the detector, its cooling and monitoring are presented. The front end electronics employing a custom VLSI chip, the readout electronics and various components of the SVX system are described. The system performance and the experience with the operation of the

  20. The CDF Silicon Vertex Trigger

    International Nuclear Information System (INIS)

    Dell'Orso, Mauro

    2006-01-01

    Motivations, design, performance and ongoing upgrade of the CDF Silicon Vertex Trigger are presented. The system provides CDF with a powerful tool for online tracking with offline quality in order to enhance the reach on B-physics and large P t -physics coupled to b quarks

  1. Microelectromechanical pump utilizing porous silicon

    Science.gov (United States)

    Lantz, Jeffrey W [Albuquerque, NM; Stalford, Harold L [Norman, OK

    2011-07-19

    A microelectromechanical (MEM) pump is disclosed which includes a porous silicon region sandwiched between an inlet chamber and an outlet chamber. The porous silicon region is formed in a silicon substrate and contains a number of pores extending between the inlet and outlet chambers, with each pore having a cross-section dimension about equal to or smaller than a mean free path of a gas being pumped. A thermal gradient is provided along the length of each pore by a heat source which can be an electrical resistance heater or an integrated circuit (IC). A channel can be formed through the silicon substrate so that inlet and outlet ports can be formed on the same side of the substrate, or so that multiple MEM pumps can be connected in series to form a multi-stage MEM pump. The MEM pump has applications for use in gas-phase MEM chemical analysis systems, and can also be used for passive cooling of ICs.

  2. Untreated silicone breast implant rupture

    DEFF Research Database (Denmark)

    Hölmich, Lisbet R; Vejborg, Ilse M; Conrad, Carsten

    2004-01-01

    Implant rupture is a well-known complication of breast implant surgery that can pass unnoticed by both patient and physician. To date, no prospective study has addressed the possible health implications of silicone breast implant rupture. The aim of the present study was to evaluate whether untre...

  3. Search for non-minimal Higgs bosons in Z0 decays with the L3 detector at LEP

    International Nuclear Information System (INIS)

    Sopczak, A.

    1992-01-01

    A general search for neutral and charged Higgs bosons in e + e - collisions at the Z 0 resonance is reported. No assumption that the Higgs sector consists of one doublet as in the Minimal Standard Model (MSM) is made. In the MSM of electroweak interactions, a single Higgs doublet generates the masses for the gauge bosons and for the charged fermions via spontaneous breaking of the gauge symmetry. With only one doublet, Higgs boson production and decay properties depend only on the Higgs boson mass. The LEP experiments have searched for the MSM Higgs boson and exclude it for masses less than about 60 GeV. It is quite possible that the actual scalar sector in nature has more than one doublet of Higgs bosons or has Higgs bosons in other multiplets. This is expected in many theories that go beyond the Standard Model. In Supersymmetric models, at least two Higgs doublets are predicted. A model with two Higgs doublets illustrates some processes that occur in more general models. If the Higgs sector contains more than a single doublet, rates for bremsstrahlung of the lightest Higgs boson from the Z 0 are no longer uniquely predicted and are generally lower than in the MSM. At the same time, with a richer Higgs sector, pairs of Higgs particles can be produced in Z 0 decays. Therefore, if one is to find a non-MSM Higgs boson at LEP, one must search for bremsstrahlung at lower rates than predicted in the MSM and for Higgs boson pair-production. This work is based on the 1990 and 1991 L3 data sample which totals 408,000 hadronic Z 0 decays, collected at center-of-mass energies between 88.2 and 94.3 GeV. No Higgs signal inconsistent with background is observed in any of the decay channels analyzed. From the results of direct searches, model-independent limits on Higgs boson bremsstrahlung and on Higgs boson pair-production from the Z 0 are presented. The bremsstrahlung limits are interpreted in a general two-doublet model

  4. L-3,4-Dihydroxyphenylalanine (l-DOPA) induces neuroendocrinological, physiological, and immunological regulation in white shrimp, Litopenaeus vannamei.

    Science.gov (United States)

    Mapanao, Ratchaneegorn; Kuo, Hsin-Wei; Chang, Chin-Chuan; Liu, Kuan-Fu; Cheng, Winton

    2018-03-01

    L-3,4-Dihydroxyphenylalanine (l-DOPA) is a precursor for dopamine (DA) synthesis. Assessments were conducted to analyze the effects of l-DOPA on mediating regulation of neuroendocrinological, immunological, and physiological parameters in the shrimp, Litopenaeus vannamei when they were individually injected with 0.01 N HCl or l-DOPA at 0.5 or 1.0 μmol shrimp -1 for 60, 120, and 240 min. For catecholamine synthesis evaluation, tyrosine hydroxylase (TH) and DA beta hydroxylase (DBH) activities, l-DOPA, DA, and norepinephrine (NE) levels in hemolymph were determined. The total hemocyte count (THC), differential hemocyte count (DHC), phenoloxidase (PO) activity, respiratory bursts (RBs), superoxide dismutase (SOD) activity, phagocytic activity, and clearance efficiency in response to the pathogen, Vibrio alginolyticus were assessed for immune responses, and plasma glucose and lactate levels were for physiological response. Results showed that the TH activity, THC, hyaline cells (HCs), and semigranular cells (SGCs) at 120 min, DA levels at 60-240 min, PO activity in hemocytes per 50 μL of hemolymph at 60-120 min, and PO activity per granulocyte (granular cells (GCs) + SGCs) at 60 min significantly increased, but TH activity, l-DOPA levels, GCs, SGCs, and respiratory bursts in hemocytes per 10 μL of hemolymph at 60 min, respiratory bursts per hemocyte and SOD activity at 120 min, phagocytic activity at 60-240 min, and the clearance efficiency at 60-120 min significantly decreased in shrimp injected with l-DOPA at 1.0 μmol shrimp -1 . In another experiment, 60 min after shrimp had received l-DOPA at 0.5 or 1.0 μmol shrimp -1 , they were challenged with an injection of V. alginolyticus at 2 × 10 5  colony-forming units (cfu) shrimp -1 . The injection of l-DOPA at 1.0 μmol shrimp -1 also significantly increased the cumulative mortality of shrimp by 16.7%, compared to the HCl-challenged control after 120 h. These results suggest

  5. Flexible Thermoelectric Generators on Silicon Fabric

    KAUST Repository

    Sevilla, Galo T.

    2012-11-01

    In this work, the development of a Thermoelectric Generator on Flexible Silicon Fabric is explored to extend silicon electronics for flexible platforms. Low cost, easily deployable plastic based flexible electronics are of great interest for smart textile, wearable electronics and many other exciting applications. However, low thermal budget processing and fundamentally limited electron mobility hinders its potential to be competitive with well established and highly developed silicon technology. The use of silicon in flexible electronics involve expensive and abrasive materials and processes. In this work, high performance flexible thermoelectric energy harvesters are demonstrated from low cost bulk silicon (100) wafers. The fabrication of the micro- harvesters was done using existing silicon processes on silicon (100) and then peeled them off from the original substrate leaving it for reuse. Peeled off silicon has 3.6% thickness of bulk silicon reducing the thermal loss significantly and generating nearly 30% more output power than unpeeled harvesters. The demonstrated generic batch processing shows a pragmatic way of peeling off a whole silicon circuitry after conventional fabrication on bulk silicon wafers for extremely deformable high performance integrated electronics. In summary, by using a novel, low cost process, this work has successfully integrated existing and highly developed fabrication techniques to introduce a flexible energy harvester for sustainable applications.

  6. Silicon photonics: some remaining challenges

    Science.gov (United States)

    Reed, G. T.; Topley, R.; Khokhar, A. Z.; Thompson, D. J.; Stanković, S.; Reynolds, S.; Chen, X.; Soper, N.; Mitchell, C. J.; Hu, Y.; Shen, L.; Martinez-Jimenez, G.; Healy, N.; Mailis, S.; Peacock, A. C.; Nedeljkovic, M.; Gardes, F. Y.; Soler Penades, J.; Alonso-Ramos, C.; Ortega-Monux, A.; Wanguemert-Perez, G.; Molina-Fernandez, I.; Cheben, P.; Mashanovich, G. Z.

    2016-03-01

    This paper discusses some of the remaining challenges for silicon photonics, and how we at Southampton University have approached some of them. Despite phenomenal advances in the field of Silicon Photonics, there are a number of areas that still require development. For short to medium reach applications, there is a need to improve the power consumption of photonic circuits such that inter-chip, and perhaps intra-chip applications are viable. This means that yet smaller devices are required as well as thermally stable devices, and multiple wavelength channels. In turn this demands smaller, more efficient modulators, athermal circuits, and improved wavelength division multiplexers. The debate continues as to whether on-chip lasers are necessary for all applications, but an efficient low cost laser would benefit many applications. Multi-layer photonics offers the possibility of increasing the complexity and effectiveness of a given area of chip real estate, but it is a demanding challenge. Low cost packaging (in particular, passive alignment of fibre to waveguide), and effective wafer scale testing strategies, are also essential for mass market applications. Whilst solutions to these challenges would enhance most applications, a derivative technology is emerging, that of Mid Infra-Red (MIR) silicon photonics. This field will build on existing developments, but will require key enhancements to facilitate functionality at longer wavelengths. In common with mainstream silicon photonics, significant developments have been made, but there is still much left to do. Here we summarise some of our recent work towards wafer scale testing, passive alignment, multiplexing, and MIR silicon photonics technology.

  7. Silicon spintronics with ferromagnetic tunnel devices

    International Nuclear Information System (INIS)

    Jansen, R; Sharma, S; Dash, S P; Min, B C

    2012-01-01

    In silicon spintronics, the unique qualities of ferromagnetic materials are combined with those of silicon, aiming at creating an alternative, energy-efficient information technology in which digital data are represented by the orientation of the electron spin. Here we review the cornerstones of silicon spintronics, namely the creation, detection and manipulation of spin polarization in silicon. Ferromagnetic tunnel contacts are the key elements and provide a robust and viable approach to induce and probe spins in silicon, at room temperature. We describe the basic physics of spin tunneling into silicon, the spin-transport devices, the materials aspects and engineering of the magnetic tunnel contacts, and discuss important quantities such as the magnitude of the spin accumulation and the spin lifetime in the silicon. We highlight key experimental achievements and recent progress in the development of a spin-based information technology. (topical review)

  8. Ultrafast Terahertz Conductivity of Photoexcited Nanocrystalline Silicon

    DEFF Research Database (Denmark)

    Cooke, David; MacDonald, A. Nicole; Hryciw, Aaron

    2007-01-01

    The ultrafast transient ac conductivity of nanocrystalline silicon films is investigated using time-resolved terahertz spectroscopy. While epitaxial silicon on sapphire exhibits a free carrier Drude response, silicon nanocrystals embedded in glass show a response that is best described by a class...... in the silicon nanocrystal films is dominated by trapping at the Si/SiO2 interface states, occurring on a 1–100 ps time scale depending on particle size and hydrogen passivation......The ultrafast transient ac conductivity of nanocrystalline silicon films is investigated using time-resolved terahertz spectroscopy. While epitaxial silicon on sapphire exhibits a free carrier Drude response, silicon nanocrystals embedded in glass show a response that is best described...

  9. Epitaxial growth of silicon for layer transfer

    Science.gov (United States)

    Teplin, Charles; Branz, Howard M

    2015-03-24

    Methods of preparing a thin crystalline silicon film for transfer and devices utilizing a transferred crystalline silicon film are disclosed. The methods include preparing a silicon growth substrate which has an interface defining substance associated with an exterior surface. The methods further include depositing an epitaxial layer of silicon on the silicon growth substrate at the surface and separating the epitaxial layer from the substrate substantially along the plane or other surface defined by the interface defining substance. The epitaxial layer may be utilized as a thin film of crystalline silicon in any type of semiconductor device which requires a crystalline silicon layer. In use, the epitaxial transfer layer may be associated with a secondary substrate.

  10. Diagnostic value of Joint Detection of GP73 and AFP-L3 in Primary Hepatic Carcinoma with Low Concentration of AFP

    Directory of Open Access Journals (Sweden)

    Lei CAI

    2015-03-01

    Full Text Available Objective: To explore the applicative value of serum Golgi protein (GP73 and alpha-proteinvariant (AFP-L3 in the diagnosis of patients with primary hepatic carcinoma (PHC. Methods:Totally 110 patients were enrolled, including 60 PHC patients with low concentration of AFP ((1.1-108.0 μg/L and 50 patients with non-PHC digestive system diseases (20 cases of patients with chronic hepatitis, 15 patients with liver cirrhosis, 4 patients with bile duct cancer, 4 patients with gastric cancer, 4 patients with rectal cancer and 3 patients with colon cancer. In addition, 42 healthy people were selected as control group. GP73 was detected by enzyme-linked immunosorbent assay (ELISA trace centrifugal column method was adopted for separation of AFP-L3. Luo's chemiluminescence method was used to determine the total content of AFP and AFP-L3 in eluent for calculating the ratio of AFP-L3/ AFP. Results: The levels of serum GP73 and AFP-L3(% in PHC group were significantly higher than the other 2 groups (P<0.01 and the level of serum GP73 and AFP-L3 (% in Non-PHC group were higher than those in healthy group (P<0.01. ROC analysis showed that the area under ROC curve of single GP73 and AFP-L3(% in diagnosis of PHC and non-PHC were 0.887 and 0.860, respectively. Additionally, the ROC analysis also showed that critical value of GP73 and AFP-L3 for the diagnosis of HPC were 83.78 μg/L and 13.87%, respectively. The sensitivity of joint detection of serum GP73 or AFP-L3 was higher than detection of them alone (90.0 vs. 71.7 and 60.0, P<0.05 but the specificity was similar between single detection and joint detection (P>0.05. The positive predictive value and negative predictive value of joint detection of them was higher than single detections of them and there was significant differences in negative predictive value (P<0.05 but no difference in positive predictive value (P>0.05. The overall response rate of joint detection of GP73 and AFP-L3 was higher

  11. Colloidal Photoluminescent Amorphous Porous Silicon, Methods Of Making Colloidal Photoluminescent Amorphous Porous Silicon, And Methods Of Using Colloidal Photoluminescent Amorphous Porous Silicon

    KAUST Repository

    Chaieb, Sahraoui

    2015-04-09

    Embodiments of the present disclosure provide for a colloidal photoluminescent amorphous porous silicon particle suspension, methods of making a colloidal photoluminescent amorphous porous silicon particle suspension, methods of using a colloidal photoluminescent amorphous porous silicon particle suspension, and the like.

  12. Colloidal Photoluminescent Amorphous Porous Silicon, Methods Of Making Colloidal Photoluminescent Amorphous Porous Silicon, And Methods Of Using Colloidal Photoluminescent Amorphous Porous Silicon

    KAUST Repository

    Chaieb, Saharoui; Mughal, Asad Jahangir

    2015-01-01

    Embodiments of the present disclosure provide for a colloidal photoluminescent amorphous porous silicon particle suspension, methods of making a colloidal photoluminescent amorphous porous silicon particle suspension, methods of using a colloidal photoluminescent amorphous porous silicon particle suspension, and the like.

  13. Quantum Properties of Dichroic Silicon Vacancies in Silicon Carbide

    Science.gov (United States)

    Nagy, Roland; Widmann, Matthias; Niethammer, Matthias; Dasari, Durga B. R.; Gerhardt, Ilja; Soykal, Öney O.; Radulaski, Marina; Ohshima, Takeshi; Vučković, Jelena; Son, Nguyen Tien; Ivanov, Ivan G.; Economou, Sophia E.; Bonato, Cristian; Lee, Sang-Yun; Wrachtrup, Jörg

    2018-03-01

    Although various defect centers have displayed promise as either quantum sensors, single photon emitters, or light-matter interfaces, the search for an ideal defect with multifunctional ability remains open. In this spirit, we study the dichroic silicon vacancies in silicon carbide that feature two well-distinguishable zero-phonon lines and analyze the quantum properties in their optical emission and spin control. We demonstrate that this center combines 40% optical emission into the zero-phonon lines showing the contrasting difference in optical properties with varying temperature and polarization, and a 100% increase in the fluorescence intensity upon the spin resonance, and long spin coherence time of their spin-3 /2 ground states up to 0.6 ms. These results single out this defect center as a promising system for spin-based quantum technologies.

  14. A review of oxide, silicon nitride, and silicon carbide brazing

    International Nuclear Information System (INIS)

    Santella, M.L.; Moorhead, A.J.

    1987-01-01

    There is growing interest in using ceramics for structural applications, many of which require the fabrication of components with complicated shapes. Normal ceramic processing methods restrict the shapes into which these materials can be produced, but ceramic joining technology can be used to overcome many of these limitations, and also offers the possibility for improving the reliability of ceramic components. One method of joining ceramics is by brazing. The metallic alloys used for bonding must wet and adhere to the ceramic surfaces without excessive reaction. Alumina, partially stabilized zirconia, and silicon nitride have high ionic character to their chemical bonds and are difficult to wet. Alloys for brazing these materials must be formulated to overcome this problem. Silicon carbide, which has some metallic characteristics, reacts excessively with many alloys, and forms joints of low mechanical strength. The brazing characteristics of these three types of ceramics, and residual stresses in ceramic-to-metal joints are briefly discussed

  15. Buried Porous Silicon-Germanium Layers in Monocrystalline Silicon Lattices

    Science.gov (United States)

    Fathauer, Robert W. (Inventor); George, Thomas (Inventor); Jones, Eric W. (Inventor)

    1998-01-01

    Monocrystalline semiconductor lattices with a buried porous semiconductor layer having different chemical composition is discussed and monocrystalline semiconductor superlattices with a buried porous semiconductor layers having different chemical composition than that of its monocrystalline semiconductor superlattice are discussed. Lattices of alternating layers of monocrystalline silicon and porous silicon-germanium have been produced. These single crystal lattices have been fabricated by epitaxial growth of Si and Si-Ge layers followed by patterning into mesa structures. The mesa structures are strain etched resulting in porosification of the Si-Ge layers with a minor amount of porosification of the monocrystalline Si layers. Thicker Si-Ge layers produced in a similar manner emitted visible light at room temperature.

  16. The histone H4 lysine 20 monomethyl mark, set by PR-Set7 and stabilized by L(3mbt, is necessary for proper interphase chromatin organization.

    Directory of Open Access Journals (Sweden)

    Ayako Sakaguchi

    Full Text Available Drosophila PR-Set7 or SET8 is a histone methyltransferase that specifically monomethylates histone H4 lysine 20 (H4K20. L(3MBT has been identified as a reader of methylated H4K20. It contains several conserved domains including three MBT repeats binding mono- and dimethylated H4K20 peptides. We find that the depletion of PR-Set7 blocks de novo H4K20me1 resulting in the immediate activation of the DNA damage checkpoint, an increase in the size of interphase nuclei, and drastic reduction of cell viability. L(3mbt on the other hand stabilizes the monomethyl mark, as L(3mbt-depleted S2 cells show a reduction of more than 60% of bulk monomethylated H4K20 (H4K20me1 while viability is barely affected. Ploidy and basic chromatin structure show only small changes in PR-Set7-depleted cells, but higher order interphase chromatin organization is significantly affected presumably resulting in the activation of the DNA damage checkpoint. In the absence of any other known functions of PR-Set7, the setting of the de novo monomethyl mark appears essential for cell viability in the presence or absence of the DNA damage checkpoint, but once newly assembled chromatin is established the monomethyl mark, protected by L(3mbt, is dispensable.

  17. TOMS/Nimbus-7 Total Column Ozone Monthly L3 Global 1x1.25 deg Lat/Lon Grid V008

    Data.gov (United States)

    National Aeronautics and Space Administration — This data product contains TOMS/Nimbus-7 Total Column Ozone Monthly L3 Global 1x1.25 deg Lat/Lon Grid Version 8 data in ASCII format. The Total Ozone Mapping...

  18. TOMS/Nimbus-7 UV Aerosol Index Daily L3 Global 1x1.25 deg Lat/Lon Grid V008

    Data.gov (United States)

    National Aeronautics and Space Administration — This data product contains TOMS/Nimbus-7 UV Aerosol Index Daily L3 Global 1x1.25 deg Lat/Lon Grid Version 8 data in ASCII format. The Total Ozone Mapping...

  19. TOMS/Earth Probe UV Reflectivity Daily L3 Global 1x1.25 deg Lat/Lon Grid V008

    Data.gov (United States)

    National Aeronautics and Space Administration — This data product contains TOMS/Earth Probe UV Reflectivity Daily L3 Global 1x1.25 deg Lat/Lon Grid Version 8 data in ASCII format. (The shortname for this Level-3...

  20. TOMS/Earth Probe UV Aerosol Index Monthly L3 Global 1x1.25 deg Lat/Lon Grid V008

    Data.gov (United States)

    National Aeronautics and Space Administration — This data product contains TOMS/Earth Probe UV Aerosol Index Monthly L3 Global 1x1.25 deg Lat/Lon Grid Version 8 data in ASCII format. (The shortname for this...

  1. TOMS/Nimbus-7 UV Aerosol Index Monthly L3 Global 1x1.25 deg Lat/Lon Grid V008

    Data.gov (United States)

    National Aeronautics and Space Administration — This data product contains TOMS/Nimbus-7 UV Aerosol Index Monthly L3 Global 1x1.25 deg Lat/Lon Grid Version 8 data in ASCII format. The Total Ozone Mapping...

  2. TOMS/Earth Probe UV-B Erythemal Local Noon Irradiance Monthly L3 Global 1x1.25 deg Lat/Lon Grid V008

    Data.gov (United States)

    National Aeronautics and Space Administration — This data product contains TOMS/Earth Probe UV-B Erythemal Local Noon Irradiance Monthly L3 Global 1x1.25 deg Lat/Lon Grid Version 8 data in ASCII format. (The...

  3. TOMS/Earth Probe Total Column Ozone Daily L3 Global 1x1.25 deg Lat/Lon Grid V008

    Data.gov (United States)

    National Aeronautics and Space Administration — This data product contains TOMS/Earth Probe Total Column Ozone Daily L3 Global 1x1.25 deg Lat/Lon Grid Version 8 data in ASCII format. (The shortname for this...

  4. TOMS/Nimbus-7 UV-B Erythemal Local Noon Irradiance Daily L3 Global 1x1.25 deg Lat/Lon Grid V008

    Data.gov (United States)

    National Aeronautics and Space Administration — This data product contains TOMS/Nimbus-7 UV-B Erythemal Local Noon Irradiance Daily L3 Global 1x1.25 deg Lat/Lon Grid Version 8 data in ASCII format. The Total Ozone...

  5. Source(s) of Syntactic Cross-Linguistic Influence (CLI): The Case of L3 Acquisition of English Possessives by Mazandarani-Persian Bilinguals

    Science.gov (United States)

    Fallah, Nader; Jabbari, Ali Akbar; Fazilatfar, Ali Mohammad

    2016-01-01

    This study investigates the role of previously acquired linguistic systems, Mazandarani and Persian, in the acquisition of third language (L3) English at the initial stages. The data have been obtained from 31 students (age 13-14 years), testing the placement of attributive possessives in a grammaticality judgment task, an element rearrangement…

  6. TOMS/Nimbus-7 Total Column Ozone Daily L3 Global 1x1.25 deg Lat/Lon Grid V008

    Data.gov (United States)

    National Aeronautics and Space Administration — This data product contains TOMS/Nimbus-7 Total Column Ozone Daily L3 Global 1x1.25 deg Lat/Lon Grid Version 8 data in ASCII format. The Total Ozone Mapping...

  7. EXAFS analysis of the L3 edge of Ce in CeO2: effects of multielectron excitations and final-state mixed valence

    International Nuclear Information System (INIS)

    Fonda, E.; Andreatta, D.; Colavita, P.E.; Vlaic, G.

    1999-01-01

    Cerium oxide (IV) (CeO 2 ) is extensively employed in heterogeneous catalysis, particularly as a promoter of noble metal action in three-way catalysts. For this reason there is a great scientific and economical interest in the development of any possible chemical or structural analysis technique that could provide information on these systems. EXAFS spectroscopy has revealed itself as a powerful technique for structural characterization of such catalysts. Unfortunately, good quality K-edge spectra of cerium are not yet easily obtainable because of the high photon energy required (>40 keV). On the other hand, at lower energies it is easy to collect very good spectra of the L 3 edge (5.5 keV), but L 3 -edge spectra of cerium (IV) are characterized by the presence of two undesired additional phenomena that interfere with EXAFS analysis: final-state mixed-valence behaviour and intense multi-electron excitations. Here, a comparative analysis of the K, L 3 , L 2 and L 1 edges of Ce in CeO 2 has been made and a procedure for obtaining structural parameters from L 3 -edge EXAFS, even in the presence of these features, has been developed. This procedure could allow further studies of catalytic compounds containing tetravalent cerium surrounded by oxygen ligands. (au)

  8. Methylated DNMT1 and E2F1 are targeted for proteolysis by L3MBTL3 and CRL4DCAF5 ubiquitin ligase.

    Science.gov (United States)

    Leng, Feng; Yu, Jiekai; Zhang, Chunxiao; Alejo, Salvador; Hoang, Nam; Sun, Hong; Lu, Fei; Zhang, Hui

    2018-04-24

    Many non-histone proteins are lysine methylated and a novel function of this modification is to trigger the proteolysis of methylated proteins. Here, we report that the methylated lysine 142 of DNMT1, a major DNA methyltransferase that preserves epigenetic inheritance of DNA methylation patterns during DNA replication, is demethylated by LSD1. A novel methyl-binding protein, L3MBTL3, binds the K142-methylated DNMT1 and recruits a novel CRL4 DCAF5 ubiquitin ligase to degrade DNMT1. Both LSD1 and PHF20L1 act primarily in S phase to prevent DNMT1 degradation by L3MBTL3-CRL4 DCAF5 . Mouse L3MBTL3/MBT-1 deletion causes accumulation of DNMT1 protein, increased genomic DNA methylation, and late embryonic lethality. DNMT1 contains a consensus methylation motif shared by many non-histone proteins including E2F1, a key transcription factor for S phase. We show that the methylation-dependent E2F1 degradation is also controlled by L3MBTL3-CRL4 DCAF5 . Our studies elucidate for the first time a novel mechanism by which the stability of many methylated non-histone proteins are regulated.

  9. Direct bandgap silicon: tensile-strained silicon nanocrystals

    Czech Academy of Sciences Publication Activity Database

    Kůsová, Kateřina; Hapala, Prokop; Valenta, J.; Jelínek, Pavel; Cibulka, Ondřej; Ondič, Lukáš; Pelant, Ivan

    2014-01-01

    Roč. 1, č. 2 (2014), "1300042-1"-"1300042-9" ISSN 2196-7350 R&D Projects: GA ČR(CZ) GBP108/12/G108; GA ČR GPP204/12/P235; GA ČR GAP204/10/0952 Institutional support: RVO:68378271 Keywords : silicon nanocrystals * badstructure * light emission * direct bandgap * surface capping Subject RIV: BM - Solid Matter Physics ; Magnetism

  10. Value of serum GP73, AFP, and AFP-L3 in diagnosis of liver cancer and recurrence monitoring after radiofrequency ablation

    Directory of Open Access Journals (Sweden)

    ZHANG Qin

    2015-02-01

    Full Text Available ObjectiveTo explore the clinical value of three serum tumor markers, Golgi protein 73 (GP73, alpha-fetoprotein (AFP, and AFP-L3, in the diagnosis of liver cancer and recurrence monitoring after radio frequency ablation. MethodsA total of 174 patients who visited our hospital from July 2012 to October 2013 were included in the study, consisting of 86 patients with newly diagnosed liver cancer, 39 with liver cirrhosis, 29 with hepatitis, and 20 healthy controls. Among the patients with newly diagnosed liver cancer, 37 were followed up for three months after the radiofrequency ablation. Serum levels of GP73, AFP, and AFP-L3 were measured by ELISA, electrochemiluminescence, and affinity adsorption chromatography, respectively. Nonparametric tests were performed on the results of serum samples from the four groups which showed skewed distribution and were represented by median (quartile interval [M(P25-P75]. Overall comparison was made by Kruskal-Wallis H test, and comparison between groups was made by Mann-Whitney U test. Pair-matching rank-sum test was performed using Wilcoxon Signed Ranks, and categorical data were analyzed by χ2 test. ResultsThe levels of GP73, AFP, and AFP-L3 in the liver cancer group were significantly higher than those in other groups (all P<0.05. The positive rates of GP73 and AFP-L3 in the liver cancer group were significantly higher than those in other groups (all P<0.05, and the positive rates of the two markers were significantly higher than that of AFP among patients with liver cancer (P<0.05. Thirty-seven patients with newly diagnosed liver cancer were reexamined three months after radiofrequency ablation, and the preoperational AFP-L3 level in the patients who had recurrence was significantly higher than that in the patients without recurrence (P<0.05. ConclusionSerum GP73, AFP, and AFP-L3 show great values in the diagnosis of liver cancer. AFP-L3 can be used as an indicator for the identification of

  11. Migration of Chadic speaking pastoralists within Africa based on population structure of Chad Basin and phylogeography of mitochondrial L3f haplogroup

    Science.gov (United States)

    Černý, Viktor; Fernandes, Verónica; Costa, Marta D; Hájek, Martin; Mulligan, Connie J; Pereira, Luísa

    2009-01-01

    Background Chad Basin, lying within the bidirectional corridor of African Sahel, is one of the most populated places in Sub-Saharan Africa today. The origin of its settlement appears connected with Holocene climatic ameliorations (aquatic resources) that started ~10,000 years before present (YBP). Although both Nilo-Saharan and Niger-Congo language families are encountered here, the most diversified group is the Chadic branch belonging to the Afro-Asiatic language phylum. In this article, we investigate the proposed ancient migration of Chadic pastoralists from Eastern Africa based on linguistic data and test for genetic traces of this migration in extant Chadic speaking populations. Results We performed whole mitochondrial genome sequencing of 16 L3f haplotypes, focused on clade L3f3 that occurs almost exclusively in Chadic speaking people living in the Chad Basin. These data supported the reconstruction of a L3f phylogenetic tree and calculation of times to the most recent common ancestor for all internal clades. A date ~8,000 YBP was estimated for the L3f3 sub-haplogroup, which is in good agreement with the supposed migration of Chadic speaking pastoralists and their linguistic differentiation from other Afro-Asiatic groups of East Africa. As a whole, the Afro-Asiatic language family presents low population structure, as 92.4% of mtDNA variation is found within populations and only 3.4% of variation can be attributed to diversity among language branches. The Chadic speaking populations form a relatively homogenous cluster, exhibiting lower diversification than the other Afro-Asiatic branches (Berber, Semitic and Cushitic). Conclusion The results of our study support an East African origin of mitochondrial L3f3 clade that is present almost exclusively within Chadic speaking people living in Chad Basin. Whole genome sequence-based dates show that the ancestral haplogroup L3f must have emerged soon after the Out-of-Africa migration (around 57,100 ± 9,400 YBP), but

  12. Migration of Chadic speaking pastoralists within Africa based on population structure of Chad Basin and phylogeography of mitochondrial L3f haplogroup

    Directory of Open Access Journals (Sweden)

    Mulligan Connie J

    2009-03-01

    Full Text Available Abstract Background Chad Basin, lying within the bidirectional corridor of African Sahel, is one of the most populated places in Sub-Saharan Africa today. The origin of its settlement appears connected with Holocene climatic ameliorations (aquatic resources that started ~10,000 years before present (YBP. Although both Nilo-Saharan and Niger-Congo language families are encountered here, the most diversified group is the Chadic branch belonging to the Afro-Asiatic language phylum. In this article, we investigate the proposed ancient migration of Chadic pastoralists from Eastern Africa based on linguistic data and test for genetic traces of this migration in extant Chadic speaking populations. Results We performed whole mitochondrial genome sequencing of 16 L3f haplotypes, focused on clade L3f3 that occurs almost exclusively in Chadic speaking people living in the Chad Basin. These data supported the reconstruction of a L3f phylogenetic tree and calculation of times to the most recent common ancestor for all internal clades. A date ~8,000 YBP was estimated for the L3f3 sub-haplogroup, which is in good agreement with the supposed migration of Chadic speaking pastoralists and their linguistic differentiation from other Afro-Asiatic groups of East Africa. As a whole, the Afro-Asiatic language family presents low population structure, as 92.4% of mtDNA variation is found within populations and only 3.4% of variation can be attributed to diversity among language branches. The Chadic speaking populations form a relatively homogenous cluster, exhibiting lower diversification than the other Afro-Asiatic branches (Berber, Semitic and Cushitic. Conclusion The results of our study support an East African origin of mitochondrial L3f3 clade that is present almost exclusively within Chadic speaking people living in Chad Basin. Whole genome sequence-based dates show that the ancestral haplogroup L3f must have emerged soon after the Out-of-Africa migration (around

  13. Migration of Chadic speaking pastoralists within Africa based on population structure of Chad Basin and phylogeography of mitochondrial L3f haplogroup.

    Science.gov (United States)

    Cerný, Viktor; Fernandes, Verónica; Costa, Marta D; Hájek, Martin; Mulligan, Connie J; Pereira, Luísa

    2009-03-23

    Chad Basin, lying within the bidirectional corridor of African Sahel, is one of the most populated places in Sub-Saharan Africa today. The origin of its settlement appears connected with Holocene climatic ameliorations (aquatic resources) that started ~10,000 years before present (YBP). Although both Nilo-Saharan and Niger-Congo language families are encountered here, the most diversified group is the Chadic branch belonging to the Afro-Asiatic language phylum. In this article, we investigate the proposed ancient migration of Chadic pastoralists from Eastern Africa based on linguistic data and test for genetic traces of this migration in extant Chadic speaking populations. We performed whole mitochondrial genome sequencing of 16 L3f haplotypes, focused on clade L3f3 that occurs almost exclusively in Chadic speaking people living in the Chad Basin. These data supported the reconstruction of a L3f phylogenetic tree and calculation of times to the most recent common ancestor for all internal clades. A date ~8,000 YBP was estimated for the L3f3 sub-haplogroup, which is in good agreement with the supposed migration of Chadic speaking pastoralists and their linguistic differentiation from other Afro-Asiatic groups of East Africa. As a whole, the Afro-Asiatic language family presents low population structure, as 92.4% of mtDNA variation is found within populations and only 3.4% of variation can be attributed to diversity among language branches. The Chadic speaking populations form a relatively homogenous cluster, exhibiting lower diversification than the other Afro-Asiatic branches (Berber, Semitic and Cushitic). The results of our study support an East African origin of mitochondrial L3f3 clade that is present almost exclusively within Chadic speaking people living in Chad Basin. Whole genome sequence-based dates show that the ancestral haplogroup L3f must have emerged soon after the Out-of-Africa migration (around 57,100 +/- 9,400 YBP), but the "Chadic" L3f3 clade has

  14. The COMET-L3 experiment on long-term melt. Concrete interaction and cooling by surface flooding

    International Nuclear Information System (INIS)

    Alsmeyer, H.; Cron, T.; Fluhrer, B.; Messemer, G.; Miassoedov, A.; Schmidt-Stiefel, S.; Wenz, T.

    2007-02-01

    The COMET-L3 experiment considers the long-term situation of corium/concrete interaction in an anticipated core melt accident of a light-water-reactor, after the metal melt is layered beneath the oxide melt. The experimental focus is on cavity formation in the basemat and the risk of long term basemat penetration. The experiment investigates the two-dimensional concrete erosion in a cylindrical crucible fabricated from siliceous concrete in the first phase of the test, and the influence of surface flooding in the second phase. Decay heating in the two-component metal and oxide melt is simulated by sustained induction heating of the metal phase that is overlaid by the oxide melt. The inner diameter of the concrete crucible was 60 cm, the initial mass of the melt was 425 kg steel and 211 kg oxide at 1665 C, resulting in a melt height of 450 mm. The net power to the metal melt was about 220 kW from 0 s to 1880 s, when the maximum erosion limit of the crucible was reached and heating was terminated. In the initial phase of the test (less than 100 s), the overheated, highly agitated metal melt causes intense interaction with the concrete, which leads to fast decrease of the initial melt overheat and reduction of the initially high concrete erosion rate. Thereafter, under quasistationary conditions until about 800 s, the erosion by the metal melt slows down to some 0.07 mm/s into the axial direction. Lateral erosion is a factor 3 smaller. Video observation of the melt surface shows an agitated melt with ongoing gas release from the decomposing concrete. Several periods of more intense gas release, gas driven splashing, and release of crusts from the concrete interface indicate the existence and iterative break-up of crusts that probably form at the steel/concrete interface. Surface flooding of the melt is initiated at 800 s by a shower from the crucible head with 0.375 litre water/s. Flooding does not lead to strong melt/water interactions, and no entrapment reactions or

  15. Creep analysis of silicone for podiatry applications.

    Science.gov (United States)

    Janeiro-Arocas, Julia; Tarrío-Saavedra, Javier; López-Beceiro, Jorge; Naya, Salvador; López-Canosa, Adrián; Heredia-García, Nicolás; Artiaga, Ramón

    2016-10-01

    This work shows an effective methodology to characterize the creep-recovery behavior of silicones before their application in podiatry. The aim is to characterize, model and compare the creep-recovery properties of different types of silicone used in podiatry orthotics. Creep-recovery phenomena of silicones used in podiatry orthotics is characterized by dynamic mechanical analysis (DMA). Silicones provided by Herbitas are compared by observing their viscoelastic properties by Functional Data Analysis (FDA) and nonlinear regression. The relationship between strain and time is modeled by fixed and mixed effects nonlinear regression to compare easily and intuitively podiatry silicones. Functional ANOVA and Kohlrausch-Willians-Watts (KWW) model with fixed and mixed effects allows us to compare different silicones observing the values of fitting parameters and their physical meaning. The differences between silicones are related to the variations of breadth of creep-recovery time distribution and instantaneous deformation-permanent strain. Nevertheless, the mean creep-relaxation time is the same for all the studied silicones. Silicones used in palliative orthoses have higher instantaneous deformation-permanent strain and narrower creep-recovery distribution. The proposed methodology based on DMA, FDA and nonlinear regression is an useful tool to characterize and choose the proper silicone for each podiatry application according to their viscoelastic properties. Copyright © 2016 Elsevier Ltd. All rights reserved.

  16. Silicon Nanocrystal Synthesis in Microplasma Reactor

    Science.gov (United States)

    Nozaki, Tomohiro; Sasaki, Kenji; Ogino, Tomohisa; Asahi, Daisuke; Okazaki, Ken

    Nanocrystalline silicon particles with grains smaller than 5 nm are widely recognized as a key material in optoelectronic devices, lithium battery electrodes, and bio-medical labels. Another important characteristic is that silicon is an environmentally safe material that is used in numerous silicon technologies. To date, several synthesis methods such as sputtering, laser ablation, and plasma-enhanced chemical vapor deposition (PECVD) based on low-pressure silane chemistry (SiH4) have been developed for precise control of size and density distributions of silicon nanocrystals. In this study, we explore the possibility of microplasma technologies for efficient production of mono-dispersed nanocrystalline silicon particles on a micrometer-scale, continuous-flow plasma reactor operated at atmospheric pressure. Mixtures of argon, hydrogen, and silicon tetrachloride were activated using a very-high-frequency (144 MHz) power source in a capillary glass tube with volume of less than 1 μl. Fundamental plasma parameters of the microplasma were characterized using optical emission spectroscopy, which respectively indicated electron density of 1015 cm-3, argon excitation temperature of 5000 K, and rotational temperature of 1500 K. Such high-density non-thermal reactive plasma can decompose silicon tetrachloride into atomic silicon to produce supersaturated silicon vapor, followed by gas-phase nucleation via three-body collision: particle synthesis in high-density plasma media is beneficial for promoting nucleation processes. In addition, further growth of silicon nuclei can be terminated in a short-residence-time reactor. Micro-Raman scattering spectra showed that as-deposited particles are mostly amorphous silicon with a small fraction of silicon nanocrystals. Transmission electron micrography confirmed individual 3-15 nm silicon nanocrystals. Although particles were not mono-dispersed, they were well separated and not coagulated.

  17. Synthesis of Silicon Nanocrystals in Microplasma Reactor

    Science.gov (United States)

    Nozaki, Tomohiro; Sasaki, Kenji; Ogino, Tomohisa; Asahi, Daisuke; Okazaki, Ken

    Nanocrystalline silicon particles with a grain size of at least less than 10 nm are widely recognized as one of the key materials in optoelectronic devices, electrodes of lithium battery, bio-medical labels. There is also important character that silicon is safe material to the environment and easily gets involved in existing silicon technologies. To date, several synthesis methods such as sputtering, laser ablation, and plasma enhanced chemical vapor deposition (PECVD) based on low-pressure silane chemistry (SiH4) have been developed for precise control of size and density distributions of silicon nanocrystals. We explore the possibility of microplasma technologies for the efficient production of mono-dispersed nanocrystalline silicon particles in a micrometer-scale, continuous-flow plasma reactor operated at atmospheric pressure. Mixtures of argon, hydrogen, and silicon tetrachloride were activated using very high frequency (VHF = 144 MHz) power source in a capillary glass tube with a volume of less than 1 μ-liter. Fundamental plasma parameters of VHF capacitively coupled microplasma were characterized by optical emission spectroscopy, showing electron density of approximately 1015 cm-3 and rotational temperature of 1500 K, respectively. Such high-density non-thermal reactive plasma has a capability of decomposing silicon tetrachloride into atomic silicon to produce supersaturated atomic silicon vapor, followed by gas phase nucleation via three-body collision. The particle synthesis in high-density plasma media is beneficial for promoting nucleation process. In addition, further growth of silicon nuclei was able to be favorably terminated in a short-residence time reactor. Micro Raman scattering spectrum showed that as-deposited particles were mostly amorphous silicon with small fraction of silicon nanocrystals. Transmission electron micrograph confirmed individual silicon nanocrystals of 3-15 nm size. Although those particles were not mono-dispersed, they were

  18. Production of electronic grade lunar silicon by disproportionation of silicon difluoride

    Science.gov (United States)

    Agosto, William N.

    1993-01-01

    Waldron has proposed to extract lunar silicon by sodium reduction of sodium fluorosilicate derived from reacting sodium fluoride with lunar silicon tetrafluoride. Silicon tetrafluoride is obtained by the action of hydrofluoric acid on lunar silicates. While these reactions are well understood, the resulting lunar silicon is not likely to meet electronic specifications of 5 nines purity. Dale and Margrave have shown that silicon difluoride can be obtained by the action of silicon tetrafluoride on elemental silicon at elevated temperatures (1100-1200 C) and low pressures (1-2 torr). The resulting silicon difluoride will then spontaneously disproportionate into hyperpure silicon and silicon tetrafluoride in vacuum at approximately 400 C. On its own merits, silicon difluoride polymerizes into a tough waxy solid in the temperature range from liquid nitrogen to about 100 C. It is the silicon analog of teflon. Silicon difluoride ignites in moist air but is stable under lunar surface conditions and may prove to be a valuable industrial material that is largely lunar derived for lunar surface applications. The most effective driver for lunar industrialization may be the prospects for industrial space solar power systems in orbit or on the moon that are built with lunar materials. Such systems would require large quantities of electronic grade silicon or compound semiconductors for photovoltaics and electronic controls. Since silicon is the most abundant semimetal in the silicate portion of any solar system rock (approximately 20 wt percent), lunar silicon production is bound to be an important process in such a solar power project. The lunar silicon extraction process is discussed.

  19. The LHCb Silicon Inner Tracker

    International Nuclear Information System (INIS)

    Sievers, P.

    2002-01-01

    A silicon strip detector has been adopted as baseline technology for the LHCb Inner Tracker system. It consists of nine planar stations covering a cross-shaped area around the LHCb beam pipe. Depending on the final layout of the stations the sensitive surface of the Inner Tracker will be of the order of 14 m 2 . Ladders have to be 22 cm long and the pitch of the sensors should be as large as possible in order to reduce costs of the readout electronics. Major design criteria are material budget, short shaping time and a moderate spatial resolution of about 80 μm. After an introduction on the requirements of the LHCb Inner Tracker we present a description and characterization of silicon prototype sensors. First, laboratory and test beam results are discussed

  20. Macular edema in siliconized eyes

    Directory of Open Access Journals (Sweden)

    Kaya A

    2016-05-01

    Full Text Available Abdullah Kaya,1 Yakup Aksoy,2 Yıldıray Yildirim,3 Murat Sonmez3 1Department of Ophthalmology, Anittepe Military Dispensary, Ankara, Turkey; 2Department of Ophthalmology, Girne Military Hospital, Girne, Cyprus; 3Department of Ophthalmology, GATA Haydarpasa Training Hospital, Istanbul, TurkeyWe read with great interest the article titled “Value of optical coherence tomography in the detection of macular pathology before the removal of silicone oil” by Rashad et al.1 The authors have evaluated the optical coherence tomography (OCT findings before the removal of silicone oil (SiO. We congratulate the authors for this well-organized study and would like to contribute to their findings.View original paper by Rashad and colleagues.

  1. SVX/silicon detector studies

    International Nuclear Information System (INIS)

    Bagby, L.; Johnson, M.; Lipton, R.; Gu, W.

    1995-11-01

    AC coupled silicon detectors, being used for the DO upgrade, may have substantial voltage across the coupling capacitor. Failed capacitors can present ∼50 V to the input of the SVX, Silicon Vertex, device. We measured the effects that failed detector coupling capacitors have on the SVXD (rad soft 3μm), SVXH (rad hard 1.2μm), and SVXIIb (rad soft 1.2μm) amplifier / readout devices. The test results show that neighboring channels saturate when an excessive voltage is applied directly to a SVX channel. We believe that the effects are due to current diffusion within the SVX substrate rather than surface currents on the detectors. This paper discusses the magnitude of the saturation and a possible solution to the problem

  2. Characterisation of Silicon Pad Diodes

    CERN Document Server

    Hodson, Thomas Connor

    2017-01-01

    Silicon pad sensors are used in high luminosity particle detectors because of their excellent timing resolution, radiation tolerance and possible high granularity. The effect of different design decisions on detector performance can be investigated nondestructively through electronic characterisation of the sensor diodes. Methods for making accurate measurements of leakage current and cell capacitance are described using both a standard approach with tungsten needles and an automated approach with a custom multiplexer and probing setup.

  3. Coating of silicon pore optics

    DEFF Research Database (Denmark)

    Cooper-Jensen, Carsten P.; Ackermann, M.; Christensen, Finn Erland

    2009-01-01

    For the International X-ray observatory (IXO), a mirror module with an effective area of 3 m2 at 1.25 keV and at least 0.65 m2 at 6 keV has to be realized. To achieve this goal, coated silicon pore optics has been developed over the last years. One of the challenges is to coat the Si plates...

  4. Silicon micropattern detector: a dream

    Energy Technology Data Exchange (ETDEWEB)

    Heijne, E H.M.; Jarron, P; Olsen, A; Redaelli, N

    1988-12-15

    The present use of silicon microstrip detectors in elementary particle physics experiments is described and future needs are evaluated. Possibilities and problems to be encountered in the development of a true two-dimensional detector with intelligent data collection are discussed. This paper serves as an introduction to various other contributions to the conference proceedings, either dealing with futuristic device designs or with cautious steps on the road of technology development.

  5. Silicon spintronics: Progress and challenges

    Energy Technology Data Exchange (ETDEWEB)

    Sverdlov, Viktor; Selberherr, Siegfried, E-mail: Selberherr@TUWien.ac.at

    2015-07-14

    Electron spin attracts much attention as an alternative to the electron charge degree of freedom for low-power reprogrammable logic and non-volatile memory applications. Silicon appears to be the perfect material for spin-driven applications. Recent progress and challenges regarding spin-based devices are reviewed. An order of magnitude enhancement of the electron spin lifetime in silicon thin films by shear strain is predicted and its impact on spin transport in SpinFETs is discussed. A relatively weak coupling between spin and effective electric field in silicon allows magnetoresistance modulation at room temperature, however, for long channel lengths. Due to tunneling magnetoresistance and spin transfer torque effects, a much stronger coupling between the spin (magnetization) orientation and charge current is achieved in magnetic tunnel junctions. Magnetic random access memory (MRAM) built on magnetic tunnel junctions is CMOS compatible and possesses all properties needed for future universal memory. Designs of spin-based non-volatile MRAM cells are presented. By means of micromagnetic simulations it is demonstrated that a substantial reduction of the switching time can be achieved. Finally, it is shown that any two arbitrary memory cells from an MRAM array can be used to perform a logic operation. Thus, an intrinsic non-volatile logic-in-memory architecture can be realized.

  6. Internal friction in irradiated silicon

    International Nuclear Information System (INIS)

    Kalanov, M.U.; Pajzullakhanov, M.S.; Khajdarov, T.; Ummatov, Kh.

    1999-01-01

    The submicroscopic heterogeneities in mono- and polycrystal silicon and the influence of X-ray radiation on them were investigated using the ultrasound resonance method. Disk-shaped samples of 27.5 mm in diameter and 4 mm in thickness, with the flat surface parallel to crystallographic plane (111), were irradiated by X-ray beam of 1 Wt/cm 2 (50 KeV, Mo K α ) during 10 hours. Relations of internal frictions (Q -1 ) of samples and their relative attitude (ψ) - Q -1 (ψ) show that there is a presence of double-humped configuration for monocrystal silicon with the peaks at ψ=900 and 270 degrees. The relations Q -1 (ψ) remain the same after the irradiation. However, the peak width becomes larger. This data show that the configuration and attitude of the heterogeneities remain the same after the irradiation. The double-humped configuration was not discovered for the relations Q -1 (ψ) of polycrystal silicon. It is explained by the fact that there is an isotropic distribution in the content of many blocks and granules

  7. Implantation of boron in silicon

    International Nuclear Information System (INIS)

    Hofker, W.K.

    1975-01-01

    The distribution versus depth of boron implanted in silicon and the corresponding electrical activity obtained after annealing are studied. The boron distributions are measured by secondary-ion mass spectrometry. Boron distributions implanted at energies in the range from 30 keV to 800 keV in amorphous and polycrystalline silicon are analysed. Moments of these distributions are determined by a curve-fitting programme and compared with moments calculated by Winterbon. Boron distributions obtained by implantations along a dense crystallographic direction in monocrystalline silicon are found to have penetrating tails. After investigation of some possible mechanisms of tail formation it is concluded that the tails are due to channelling. It was found that the behaviour of boron during annealing is determined by the properties of three boron fractions consisting of precipitated boron, interstitial boron and substitutional boron. The electrical activity of the boron versus depth is found to be consistent with the three boron fractions. A peculiar redistribution of boron is found which is induced by the implantation of a high dose of heavy ions and subsequent annealing. Different mechanisms which may cause the observed effects, such as thermal diffusion which is influenced by lattice strain and damage, are discussed. (Auth.)

  8. Excimer laser decomposition of silicone

    International Nuclear Information System (INIS)

    Laude, L.D.; Cochrane, C.; Dicara, Cl.; Dupas-Bruzek, C.; Kolev, K.

    2003-01-01

    Excimer laser irradiation of silicone foils is shown in this work to induce decomposition, ablation and activation of such materials. Thin (100 μm) laminated silicone foils are irradiated at 248 nm as a function of impacting laser fluence and number of pulsed irradiations at 1 s intervals. Above a threshold fluence of 0.7 J/cm 2 , material starts decomposing. At higher fluences, this decomposition develops and gives rise to (i) swelling of the irradiated surface and then (ii) emission of matter (ablation) at a rate that is not proportioned to the number of pulses. Taking into consideration the polymer structure and the foil lamination process, these results help defining the phenomenology of silicone ablation. The polymer decomposition results in two parts: one which is organic and volatile, and another part which is inorganic and remains, forming an ever thickening screen to light penetration as the number of light pulses increases. A mathematical model is developed that accounts successfully for this physical screening effect

  9. The DAMPE silicon tungsten tracker

    CERN Document Server

    Gallo, Valentina; Asfandiyarov, R; Azzarello, P; Bernardini, P; Bertucci, B; Bolognini, A; Cadoux, F; Caprai, M; Domenjoz, M; Dong, Y; Duranti, M; Fan, R; Franco, M; Fusco, P; Gargano, F; Gong, K; Guo, D; Husi, C; Ionica, M; Lacalamita, N; Loparco, F; Marsella, G; Mazziotta, M N; Mongelli, M; Nardinocchi, A; Nicola, L; Pelleriti, G; Peng, W; Pohl, M; Postolache, V; Qiao, R; Surdo, A; Tykhonov, A; Vitillo, S; Wang, H; Weber, M; Wu, D; Wu, X; Zhang, F; De Mitri, I; La Marra, D

    2017-01-01

    The DArk Matter Particle Explorer (DAMPE) satellite has been successfully launched on the 17th December 2015. It is a powerful space detector designed for the identification of possible Dark Matter signatures thanks to its capability to detect electrons and photons with an unprecedented energy resolution in an energy range going from few GeV up to 10 TeV. Moreover, the DAMPE satellite will contribute to a better understanding of the propagation mechanisms of high energy cosmic rays measuring the nuclei flux up to 100 TeV. DAMPE is composed of four sub-detectors: a plastic strip scintillator, a silicon-tungsten tracker-converter (STK), a BGO imaging calorimeter and a neutron detector. The STK is made of twelve layers of single-sided AC-coupled silicon micro-strip detectors for a total silicon area of about 7 $m^2$ . To promote the conversion of incident photons into electron-positron pairs, tungsten foils are inserted into the supporting structure. In this document, a detailed description of the STK constructi...

  10. Silicon spintronics: Progress and challenges

    International Nuclear Information System (INIS)

    Sverdlov, Viktor; Selberherr, Siegfried

    2015-01-01

    Electron spin attracts much attention as an alternative to the electron charge degree of freedom for low-power reprogrammable logic and non-volatile memory applications. Silicon appears to be the perfect material for spin-driven applications. Recent progress and challenges regarding spin-based devices are reviewed. An order of magnitude enhancement of the electron spin lifetime in silicon thin films by shear strain is predicted and its impact on spin transport in SpinFETs is discussed. A relatively weak coupling between spin and effective electric field in silicon allows magnetoresistance modulation at room temperature, however, for long channel lengths. Due to tunneling magnetoresistance and spin transfer torque effects, a much stronger coupling between the spin (magnetization) orientation and charge current is achieved in magnetic tunnel junctions. Magnetic random access memory (MRAM) built on magnetic tunnel junctions is CMOS compatible and possesses all properties needed for future universal memory. Designs of spin-based non-volatile MRAM cells are presented. By means of micromagnetic simulations it is demonstrated that a substantial reduction of the switching time can be achieved. Finally, it is shown that any two arbitrary memory cells from an MRAM array can be used to perform a logic operation. Thus, an intrinsic non-volatile logic-in-memory architecture can be realized

  11. Memory characteristics of silicon nitride with silicon nanocrystals as a charge trapping layer of nonvolatile memory devices

    International Nuclear Information System (INIS)

    Choi, Sangmoo; Yang, Hyundeok; Chang, Man; Baek, Sungkweon; Hwang, Hyunsang; Jeon, Sanghun; Kim, Juhyung; Kim, Chungwoo

    2005-01-01

    Silicon nitride with silicon nanocrystals formed by low-energy silicon plasma immersion ion implantation has been investigated as a charge trapping layer of a polycrystalline silicon-oxide-nitride-oxide-silicon-type nonvolatile memory device. Compared with the control sample without silicon nanocrystals, silicon nitride with silicon nanocrystals provides excellent memory characteristics, such as larger width of capacitance-voltage hysteresis, higher program/erase speed, and lower charge loss rate at elevated temperature. These improved memory characteristics are derived by incorporation of silicon nanocrystals into the charge trapping layer as additional accessible charge traps with a deeper effective trap energy level

  12. Gelcasting of SiC/Si for preparation of silicon nitride bonded silicon carbide

    International Nuclear Information System (INIS)

    Xie, Z.P.; Tsinghua University, Beijing,; Cheng, Y.B.; Lu, J.W.; Huang, Y.

    2000-01-01

    In the present paper, gelcasting of aqueous slurry with coarse silicon carbide(1mm) and fine silicon particles was investigated to fabricate silicon nitride bonded silicon carbide materials. Through the examination of influence of different polyelectrolytes on the Zeta potential and viscosity of silicon and silicon carbide suspensions, a stable SiC/Si suspension with 60 vol% solid loading could be prepared by using polyelectrolyte of D3005 and sodium alginate. Gelation of this suspension can complete in 10-30 min at 60-80 deg C after cast into mold. After demolded, the wet green body can be dried directly in furnace and the green strength will develop during drying. Complex shape parts with near net size were prepared by the process. Effects of the debindering process on nitridation and density of silicon nitride bonded silicon carbide were also examined. Copyright (2000) The Australian Ceramic Society

  13. Single-Event Effects in Silicon and Silicon Carbide Power Devices

    Science.gov (United States)

    Lauenstein, Jean-Marie; Casey, Megan C.; LaBel, Kenneth A.; Topper, Alyson D.; Wilcox, Edward P.; Kim, Hak; Phan, Anthony M.

    2014-01-01

    NASA Electronics Parts and Packaging program-funded activities over the past year on single-event effects in silicon and silicon carbide power devices are presented, with focus on SiC device failure signatures.

  14. Study on the graphene/silicon Schottky diodes by transferring graphene transparent electrodes on silicon

    International Nuclear Information System (INIS)

    Wang, Xiaojuan; Li, Dong; Zhang, Qichong; Zou, Liping; Wang, Fengli; Zhou, Jun; Zhang, Zengxing

    2015-01-01

    Graphene/silicon heterostructures present a Schottky characteristic and have potential applications for solar cells and photodetectors. Here, we fabricated graphene/silicon heterostructures by using chemical vapor deposition derived graphene and n-type silicon, and studied the electronic and optoelectronic properties through varying their interface and silicon resistivity. The results exhibit that the properties of the fabricated configurations can be effectively modulated. The graphene/silicon heterostructures with a Si (111) interface and high resistivity show a better photovoltaic behavior and should be applied for high-performance photodetectors. With the combined atomic force microscopy and theoretical analysis, the possible origination is discussed. The work here should be helpful on exploring high-performance graphene/silicon photoelectronics. - Highlights: • Different graphene/silicon heterostructures were fabricated. • Electronic and optoelectronic properties of the heterostructures were studied. • Graphene/silicon heterostructures were further explored for photodetectors.

  15. Development of Radiation Hard Radiation Detectors, Differences between Czochralski Silicon and Float Zone Silicon

    CERN Document Server

    Tuominen, Eija

    2012-01-01

    The purpose of this work was to develop radiation hard silicon detectors. Radiation detectors made ofsilicon are cost effective and have excellent position resolution. Therefore, they are widely used fortrack finding and particle analysis in large high-energy physics experiments. Silicon detectors willalso be used in the CMS (Compact Muon Solenoid) experiment that is being built at the LHC (LargeHadron Collider) accelerator at CERN (European Organisation for Nuclear Research). This work wasdone in the CMS programme of Helsinki Institute of Physics (HIP).Exposure of the silicon material to particle radiation causes irreversible defects that deteriorate theperformance of the silicon detectors. In HIP CMS Programme, our approach was to improve theradiation hardness of the silicon material with increased oxygen concentration in silicon material. Westudied two different methods: diffusion oxygenation of Float Zone silicon and use of high resistivityCzochralski silicon.We processed, characterised, tested in a parti...

  16. Study on the graphene/silicon Schottky diodes by transferring graphene transparent electrodes on silicon

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Xiaojuan [MOE Key Laboratory of Advanced Micro-structured Materials & Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology, School of Physics Science and Engineering, Tongji University, Shanghai 200092 (China); School of Physics and Electronics, Henan University, Kaifeng 475004 (China); Li, Dong; Zhang, Qichong; Zou, Liping; Wang, Fengli [MOE Key Laboratory of Advanced Micro-structured Materials & Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology, School of Physics Science and Engineering, Tongji University, Shanghai 200092 (China); Zhou, Jun, E-mail: zhoujunzhou@tongji.edu.cn [Center for Phononics and Thermal Energy Science, School of Physics Science and Engineering, Tongji University, Shanghai 200092 (China); Zhang, Zengxing, E-mail: zhangzx@tongji.edu.cn [MOE Key Laboratory of Advanced Micro-structured Materials & Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology, School of Physics Science and Engineering, Tongji University, Shanghai 200092 (China)

    2015-10-01

    Graphene/silicon heterostructures present a Schottky characteristic and have potential applications for solar cells and photodetectors. Here, we fabricated graphene/silicon heterostructures by using chemical vapor deposition derived graphene and n-type silicon, and studied the electronic and optoelectronic properties through varying their interface and silicon resistivity. The results exhibit that the properties of the fabricated configurations can be effectively modulated. The graphene/silicon heterostructures with a Si (111) interface and high resistivity show a better photovoltaic behavior and should be applied for high-performance photodetectors. With the combined atomic force microscopy and theoretical analysis, the possible origination is discussed. The work here should be helpful on exploring high-performance graphene/silicon photoelectronics. - Highlights: • Different graphene/silicon heterostructures were fabricated. • Electronic and optoelectronic properties of the heterostructures were studied. • Graphene/silicon heterostructures were further explored for photodetectors.

  17. Formation of multiple levels of porous silicon for buried insulators and conductors in silicon device technologies

    Science.gov (United States)

    Blewer, Robert S.; Gullinger, Terry R.; Kelly, Michael J.; Tsao, Sylvia S.

    1991-01-01

    A method of forming a multiple level porous silicon substrate for semiconductor integrated circuits including anodizing non-porous silicon layers of a multi-layer silicon substrate to form multiple levels of porous silicon. At least one porous silicon layer is then oxidized to form an insulating layer and at least one other layer of porous silicon beneath the insulating layer is metallized to form a buried conductive layer. Preferably the insulating layer and conductive layer are separated by an anodization barrier formed of non-porous silicon. By etching through the anodization barrier and subsequently forming a metallized conductive layer, a fully or partially insulated buried conductor may be fabricated under single crystal silicon.

  18. Signal development in irradiated silicon detectors

    CERN Document Server

    Kramberger, Gregor; Mikuz, Marko

    2001-01-01

    This work provides a detailed study of signal formation in silicon detectors, with the emphasis on detectors with high concentration of irradiation induced defects in the lattice. These defects give rise to deep energy levels in the band gap. As a consequence, the current induced by charge motion in silicon detectors is signifcantly altered. Within the framework of the study a new experimental method, Charge correction method, based on transient current technique (TCT) was proposed for determination of effective electron and hole trapping times in irradiated silicon detectors. Effective carrier trapping times were determined in numerous silicon pad detectors irradiated with neutrons, pions and protons. Studied detectors were fabricated on oxygenated and non-oxygenated silicon wafers with different bulk resistivities. Measured effective carrier trapping times were found to be inversely proportional to fuence and increase with temperature. No dependence on silicon resistivity and oxygen concentration was observ...

  19. Analytical and Experimental Evaluation of Joining Silicon Carbide to Silicon Carbide and Silicon Nitride to Silicon Nitride for Advanced Heat Engine Applications Phase II

    Energy Technology Data Exchange (ETDEWEB)

    Sundberg, G.J.

    1994-01-01

    Techniques were developed to produce reliable silicon nitride to silicon nitride (NCX-5101) curved joins which were used to manufacture spin test specimens as a proof of concept to simulate parts such as a simple rotor. Specimens were machined from the curved joins to measure the following properties of the join interlayer: tensile strength, shear strength, 22 C flexure strength and 1370 C flexure strength. In parallel, extensive silicon nitride tensile creep evaluation of planar butt joins provided a sufficient data base to develop models with accurate predictive capability for different geometries. Analytical models applied satisfactorily to the silicon nitride joins were Norton's Law for creep strain, a modified Norton's Law internal variable model and the Monkman-Grant relationship for failure modeling. The Theta Projection method was less successful. Attempts were also made to develop planar butt joins of siliconized silicon carbide (NT230).

  20. Use of hydroxypropylmethylcellulose 2% for removing adherent silicone oil from silicone intraocular lenses

    OpenAIRE

    Wong , S Chien; Ramkissoon , Yashin D; Lopez , Mauricio; Page , Kristopher; Parkin , Ivan P; Sullivan , Paul M

    2009-01-01

    Abstract Background / aims: To investigate the effect of hydroxypropylmethylcellulose (HPMC) on the physical interaction (contact angle) between silicone oil and a silicone intraocular lens (IOL). Methods: In vitro experiments were performed, to determine the effect of HPMC (0.5%, 1% or 2%), with or without an additional simple mechanical manoeuvre, on the contact angle of silicone oil at the surface of both silicone and acrylic (control) IOLs. A balanced salt solu...

  1. Silicon Processors Using Organically Reconfigurable Techniques (SPORT)

    Science.gov (United States)

    2014-05-19

    AFRL-OSR-VA-TR-2014-0132 SILICON PROCESSORS USING ORGANICALLY RECONFIGURABLE TECHNIQUES ( SPORT ) Dennis Prather UNIVERSITY OF DELAWARE Final Report 05...5a. CONTRACT NUMBER Silicon Processes for Organically Reconfigurable Techniques ( SPORT ) 5b. GRANT NUMBER FA9550-10-1-0363 5c...Contract: Silicon Processes for Organically Reconfigurable Techniques ( SPORT ) Contract #: FA9550-10-1-0363 Reporting Period: 1 July 2010 – 31 December

  2. Silicon wafers for integrated circuit process

    OpenAIRE

    Leroy , B.

    1986-01-01

    Silicon as a substrate material will continue to dominate the market of integrated circuits for many years. We first review how crystal pulling procedures impact the quality of silicon. We then investigate how thermal treatments affect the behaviour of oxygen and carbon, and how, as a result, the quality of silicon wafers evolves. Gettering techniques are then presented. We conclude by detailing the requirements that wafers must satisfy at the incoming inspection.

  3. Silicon nitride-fabrication, forming and properties

    International Nuclear Information System (INIS)

    Yehezkel, O.

    1983-01-01

    This article, which is a literature survey of the recent years, includes description of several methods for the formation of silicone nitride, and five methods of forming: Reaction-bonded silicon nitride, sintering, hot pressing, hot isostatic pressing and chemical vapour deposition. Herein are also included data about mechanical and physical properties of silicon nitride and the relationship between the forming method and the properties. (author)

  4. Numerical Simulation Of Silicon-Ribbon Growth

    Science.gov (United States)

    Woda, Ben K.; Kuo, Chin-Po; Utku, Senol; Ray, Sujit Kumar

    1987-01-01

    Mathematical model includes nonlinear effects. In development simulates growth of silicon ribbon from melt. Takes account of entire temperature and stress history of ribbon. Numerical simulations performed with new model helps in search for temperature distribution, pulling speed, and other conditions favoring growth of wide, flat, relatively defect-free silicon ribbons for solar photovoltaic cells at economically attractive, high production rates. Also applicable to materials other than silicon.

  5. A study of positron irradiated porous silicon

    International Nuclear Information System (INIS)

    Huang Yuanming; Xue Qing; Zhai Baogai; Xu Aijun; Liu Shewen; Yu Weizhong

    1998-01-01

    The effect of positron irradiation on photoluminescence (PL) of porous silicon has been studied. After four hour positron irradiation, the red PL spectrum of porous silicon blue shifts into greenish spectral region, and a higher energy luminescence band is introduced into this blueshifted spectrum. The fourier transform infrared absorption experiment shows that the positron irradiation can cause further oxidization of porous silicon. A possible mechanism causing this change of PL spectra after positron irradiation is suggested

  6. Silicon photonics for telecommunications and biomedicine

    CERN Document Server

    Fathpour, Sasan

    2011-01-01

    Given silicon's versatile material properties, use of low-cost silicon photonics continues to move beyond light-speed data transmission through fiber-optic cables and computer chips. Its application has also evolved from the device to the integrated-system level. A timely overview of this impressive growth, Silicon Photonics for Telecommunications and Biomedicine summarizes state-of-the-art developments in a wide range of areas, including optical communications, wireless technologies, and biomedical applications of silicon photonics. With contributions from world experts, this reference guides

  7. Silicon solid state devices and radiation detection

    CERN Document Server

    Leroy, Claude

    2012-01-01

    This book addresses the fundamental principles of interaction between radiation and matter, the principles of working and the operation of particle detectors based on silicon solid state devices. It covers a broad scope with respect to the fields of application of radiation detectors based on silicon solid state devices from low to high energy physics experiments including in outer space and in the medical environment. This book covers stateof- the-art detection techniques in the use of radiation detectors based on silicon solid state devices and their readout electronics, including the latest developments on pixelated silicon radiation detector and their application.

  8. Porous silicon investigated by positron annihilation

    International Nuclear Information System (INIS)

    Cruz, R.M. de la; Pareja, R.

    1989-01-01

    The effect of the anodic conversion in silicon single crystals is investigated by positron lifetime measurements. Anodization at constant current induces changes in the positron lifetime spectrum of monocrystalline silicon samples. It is found that theses changes are primarily dependent on the silicon resistivity. The annihilation parameter behaviour of anodized samples, treated at high temperature under reducing conditions, is also investigated. The results reveal that positron annihilation can be a useful technique to characterize porous silicon formed by anodizing as well as to investigate its thermal behaviour. (author)

  9. Silicon nanowire-based solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Stelzner, Th; Pietsch, M; Andrae, G; Falk, F; Ose, E; Christiansen, S [Institute of Photonic Technology, Albert-Einstein-Strasse 9, D-07745 Jena (Germany)], E-mail: thomas.stelzner@ipht-jena.de

    2008-07-23

    The fabrication of silicon nanowire-based solar cells on silicon wafers and on multicrystalline silicon thin films on glass is described. The nanowires show a strong broadband optical absorption, which makes them an interesting candidate to serve as an absorber in solar cells. The operation of a solar cell is demonstrated with n-doped nanowires grown on a p-doped silicon wafer. From a partially illuminated area of 0.6 cm{sup 2} open-circuit voltages in the range of 230-280 mV and a short-circuit current density of 2 mA cm{sup -2} were obtained.

  10. Silicon nanowire-based solar cells

    International Nuclear Information System (INIS)

    Stelzner, Th; Pietsch, M; Andrae, G; Falk, F; Ose, E; Christiansen, S

    2008-01-01

    The fabrication of silicon nanowire-based solar cells on silicon wafers and on multicrystalline silicon thin films on glass is described. The nanowires show a strong broadband optical absorption, which makes them an interesting candidate to serve as an absorber in solar cells. The operation of a solar cell is demonstrated with n-doped nanowires grown on a p-doped silicon wafer. From a partially illuminated area of 0.6 cm 2 open-circuit voltages in the range of 230-280 mV and a short-circuit current density of 2 mA cm -2 were obtained

  11. Silicon Micromachined Microlens Array for THz Antennas

    Science.gov (United States)

    Lee, Choonsup; Chattopadhyay, Goutam; Mehdi, IImran; Gill, John J.; Jung-Kubiak, Cecile D.; Llombart, Nuria

    2013-01-01

    5 5 silicon microlens array was developed using a silicon micromachining technique for a silicon-based THz antenna array. The feature of the silicon micromachining technique enables one to microfabricate an unlimited number of microlens arrays at one time with good uniformity on a silicon wafer. This technique will resolve one of the key issues in building a THz camera, which is to integrate antennas in a detector array. The conventional approach of building single-pixel receivers and stacking them to form a multi-pixel receiver is not suited at THz because a single-pixel receiver already has difficulty fitting into mass, volume, and power budgets, especially in space applications. In this proposed technique, one has controllability on both diameter and curvature of a silicon microlens. First of all, the diameter of microlens depends on how thick photoresist one could coat and pattern. So far, the diameter of a 6- mm photoresist microlens with 400 m in height has been successfully microfabricated. Based on current researchers experiences, a diameter larger than 1-cm photoresist microlens array would be feasible. In order to control the curvature of the microlens, the following process variables could be used: 1. Amount of photoresist: It determines the curvature of the photoresist microlens. Since the photoresist lens is transferred onto the silicon substrate, it will directly control the curvature of the silicon microlens. 2. Etching selectivity between photoresist and silicon: The photoresist microlens is formed by thermal reflow. In order to transfer the exact photoresist curvature onto silicon, there needs to be etching selectivity of 1:1 between silicon and photoresist. However, by varying the etching selectivity, one could control the curvature of the silicon microlens. The figure shows the microfabricated silicon microlens 5 x5 array. The diameter of the microlens located in the center is about 2.5 mm. The measured 3-D profile of the microlens surface has a

  12. Nanofluidics : Silicon for the perfect membrane

    NARCIS (Netherlands)

    van den Berg, Albert; Wessling, Matthias

    2007-01-01

    Newly developed ultrathin silicon membranes can filter and separate molecules much more effectively than conventional polymer membranes. Many applications, of economic and medical significance, stand to benefit.

  13. Hydrogen passivation of silicon sheet solar cells

    International Nuclear Information System (INIS)

    Tsuo, Y.S.; Milstein, J.B.

    1984-01-01

    Significant improvements in the efficiencies of dendritic web and edge-supported-pulling silicon sheet solar cells have been obtained after hydrogen ion beam passivation for a period of ten minutes or less. We have studied the effects of the hydrogen ion beam treatment with respect to silicon material damage, silicon sputter rate, introduction of impurities, and changes in reflectance. The silicon sputter rate for constant ion beam flux of 0.60 +- 0.05 mA/cm 2 exhibits a maximum at approximately 1400-eV ion beam energy

  14. Element depth profiles of porous silicon

    International Nuclear Information System (INIS)

    Kobzev, A.P.; Nikonov, O.A.; Kulik, M.; Zuk, J.; Krzyzanowska, H.; Ochalski, T.J.

    1997-01-01

    Element depth profiles of porous silicon were measured on the Van-de-Graaff accelerator in the energy range of 4 He + ions from 2 to 3.2 MeV. Application of complementary RBS, ERD and 16 O(α,α) 16 O nuclear reaction methods permits us to obtain: 1) the exact silicon, oxygen and hydrogen distribution in the samples, 2) the distribution of partial pore concentrations. The oxygen concentration in porous silicon reaches 30%, which allows one to assume the presence of silicon oxide in the pores and to explain the spectrum shift of luminescence into the blue area

  15. Nano-ridge fabrication by local oxidation of silicon edges with silicon nitride as a mask

    NARCIS (Netherlands)

    Haneveld, J.; Berenschot, Johan W.; Maury, P.A.; Jansen, Henricus V.

    2005-01-01

    A method to fabricate nano-ridges over a full wafer is presented. The fabrication method uses local oxidation of silicon, with silicon nitride as a mask, and wet anisotropic etching of silicon. The realized structures are 7-20 nm wide, 40-100 nm high and centimeters long. All dimensions are easily

  16. Strategies for doped nanocrystalline silicon integration in silicon heterojunction solar cells

    Czech Academy of Sciences Publication Activity Database

    Seif, J.; Descoeudres, A.; Nogay, G.; Hänni, S.; de Nicolas, S.M.; Holm, N.; Geissbühler, J.; Hessler-Wyser, A.; Duchamp, M.; Dunin-Borkowski, R.E.; Ledinský, Martin; De Wolf, S.; Ballif, C.

    2016-01-01

    Roč. 6, č. 5 (2016), s. 1132-1140 ISSN 2156-3381 R&D Projects: GA MŠk LM2015087 Institutional support: RVO:68378271 Keywords : microcrystalline silicon * nanocrystalline silicon * silicon heterojunctions (SHJs) * solar cells Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.712, year: 2016

  17. Combination of silicon nitride and porous silicon induced optoelectronic features enhancement of multicrystalline silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Rabha, Mohamed Ben; Dimassi, Wissem; Gaidi, Mounir; Ezzaouia, Hatem; Bessais, Brahim [Laboratoire de Photovoltaique, Centre de Recherches et des Technologies de l' Energie, Technopole de Borj-Cedria, BP 95, 2050 Hammam-Lif (Tunisia)

    2011-06-15

    The effects of antireflection (ARC) and surface passivation films on optoelectronic features of multicrystalline silicon (mc-Si) were investigated in order to perform high efficiency solar cells. A double layer consisting of Plasma Enhanced Chemical Vapor Deposition (PECVD) of silicon nitride (SiN{sub x}) on porous silicon (PS) was achieved on mc-Si surfaces. It was found that this treatment decreases the total surface reflectivity from about 25% to around 6% in the 450-1100 nm wavelength range. As a result, the effective minority carrier diffusion length, estimated from the Laser-beam-induced current (LBIC) method, was found to increase from 312 {mu}m for PS-treated cells to about 798 {mu}m for SiN{sub x}/PS-treated ones. The deposition of SiN{sub x} was found to impressively enhance the minority carrier diffusion length probably due to hydrogen passivation of surface, grain boundaries and bulk defects. Fourier Transform Infrared Spectroscopy (FTIR) shows that the vibration modes of the highly suitable passivating Si-H bonds exhibit frequency shifts toward higher wavenumber, depending on the x ratio of the introduced N atoms neighbors. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  18. High breakdown-strength composites from liquid silicone rubbers

    DEFF Research Database (Denmark)

    Vudayagiri, Sindhu; Zakaria, Shamsul Bin; Yu, Liyun

    2014-01-01

    In this paper we investigate the performance of liquid silicone rubbers (LSRs) as dielectric elastomer transducers. Commonly used silicones in this application include room-temperature vulcanisable (RTV) silicone elastomers and composites thereof. Pure LSRs and their composites with commercially...

  19. Delocalization and occupancy effects of 5f orbitals in plutonium intermetallics using L3-edge resonant X-ray emission spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Booth, C. H.; Medling, S. A.; Jiang, Yu; Bauer, E. D.; Tobash, P. H.; Mitchell, J. N.; Veirs, D. K.; Wall, M. A.; Allen, P. G.; Kas, J. J.; Sokaras, D.; Nordlund, D.; Weng, T. -C.

    2014-06-24

    Although actinide (An) L3 -edge X-ray absorption near-edge structure (XANES) spectroscopy has been very effective in determining An oxidation states in insulating, ionically bonded materials, such as in certain coordination compounds and mineral systems, the technique fails in systems featuring more delocalized 5f orbitals, especially in metals. Recently, actinide L3-edge resonant X-ray emission spec- troscopy (RXES) has been shown to be an effective alternative. This technique is further demonstrated here using a parameterized partial unoccupied density of states method to quantify both occupancy and delocalization of the 5f orbital in ?-Pu, ?-Pu, PuCoGa5 , PuCoIn5 , and PuSb2. These new results, supported by FEFF calculations, highlight the effects of strong correlations on RXES spectra and the technique?s ability to differentiate between f-orbital occupation and delocalization.

  20. Chemical shift of U L3 edges in different uranium compounds obtained by X-ray absorption spectroscopy with synchrotron radiation

    International Nuclear Information System (INIS)

    Joseph, D.; Jha, S.N.; Nayak, C.; Bhattacharyya, D.; Babu, P. Venu

    2014-01-01

    Uranium L 3 X-ray absorption edge was measured in various compounds containing uranium in U 4+ , U 5+ and U 5+ oxidation states. The measurements have been carried out at the Energy Dispersive EXAFS beamline (BL-08) at INDUS-2 synchrotron radiation source at RRCAT, Indore. Energy shifts of ∼ 2-3 eV were observed for U L 3 edge in the U-compounds compared to their value in elemental U. The different chemical shifts observed for the compounds having the same oxidation state of the cation but different anions or ligands show the effect of different chemical environments surrounding the cations in determining their X-ray absorption edges in the above compounds. The above chemical effect has been quantitatively described by determining the effective charges on U cation in the above compounds. (author)