Ion irradiation of CH4-containing icy mixtures

International Nuclear Information System (INIS)

Baratta, G.A.; Domingo, M.; Ferini, G.; Leto, G.; Palumbo, M.E.; Satorre, M.A.; Strazzulla, G.

2003-01-01

We have studied by infrared absorption spectroscopy the effects of ion irradiation with 60 keV Ar 2+ ions on pure methane (CH 4 ) ice at 12 K and mixtures with water (H 2 O) and nitrogen (N 2 ). Ion irradiation, among other effects, causes the rupture of original molecular bonds and the formation of molecular species not present in the initial ice. Here we present the experimental results and discuss their astrophysical relevance

Depth control of a silicon structure fabricated by 100q keV Ar ion beam lithography

Energy Technology Data Exchange (ETDEWEB)

Kawasegi, Noritaka [Graduate School of Science and Engineering, University of Toyama, 3190 Gofuku, Toyama 930-8555 (Japan)]. E-mail: kawasegi@eng.u-toyama.ac.jp; Morita, Noboru [Department of Mechanical and Intellectual Systems Engineering, University of Toyama, 3190 Gofuku, Toyama 930-8555 (Japan)]. E-mail: nmorita@eng.u-toyama.ac.jp; Yamada, Shigeru [Department of Mechanical and Intellectual Systems Engineering, University of Toyama, 3190 Gofuku, Toyama 930-8555 (Japan)]. E-mail: syamada@eng.u-toyama.ac.jp; Takano, Noboru [Department of Mechanical and Intellectual Systems Engineering, University of Toyama, 3190 Gofuku, Toyama 930-8555 (Japan)]. E-mail: takano@eng.u-toyama.ac.jp; Oyama, Tatsuo [Department of Mechanical and Intellectual Systems Engineering, University of Toyama, 3190 Gofuku, Toyama 930-8555 (Japan)]. E-mail: ohyama@eng.u-toyama.ac.jp; Momota, Sadao [Department of Intelligent Mechanical Systems Engineering, Kochi University of Technology, 185 Tosayamada, Kami, Kochi 782-8502 (Japan)]. E-mail: momota.sadao@kochi-tech.ac.jp; Taniguchi, Jun [Department of Applied Electronics, Tokyo University of Science, 2641 Yamazaki, Noda, Chiba 278-8510 (Japan)]. E-mail: junt@te.noda.tus.ac.jp; Miyamoto, Iwao [Department of Applied Electronics, Tokyo University of Science, 2641 Yamazaki, Noda, Chiba 278-8510 (Japan)]. E-mail: iwao@te.noda.tus.ac.jp

2007-01-15

Ion beam lithography of a silicon surface using an Ar ion beam with an ion energy in the order of hundreds of keV is demonstrated in this study. A specially designed ion irradiation facility was employed that enabled generation and irradiation with a highly accelerated and highly charged Ar ion beam. An ion-beam-induced amorphous layer on a silicon substrate can be selectively etched in hydrofluoric acid, whereas, a non-irradiated area is scarcely etched and, consequently, a concave structure can be fabricated on the irradiated area. To control the depth of the structure, parameters for dependence of the depth on ion irradiation were investigated. As a result, the depth of irradiated area can be controlled by the ion energy that is adjusted by the acceleration voltage and the ion charge. In addition, the etch resistance of the irradiated area increases with an increase in ion energy due to the crystalline layer formed on the surface. Simulation results reveal that the depth is strongly related to the defect distribution induced by ion irradiation. These results indicate the potential use of this method for novel three-dimensional lithography.

Energy reflection coefficient for H+ ions at energies between 10 and 80 keV

International Nuclear Information System (INIS)

Chen, C.K.; Bohdansky, J.; Eckstein, W.; Robinson, M.T.

1984-04-01

The energy reflection coefficient for H + ions at energies between 10 keV and 80 keV was determined by experiments and by computer calculations. Measurements were made with graphite, Al, Cu, Mo and W. targets. The angle of ion incidence was restricted to 85 0 , 78 0 and 70 0 measured from the surface normal. Calculated data were obtained by two different Monte Carlo computer programs (MARLOWE, TRIM). It was found that both the calculated and the measured data scale with the parameter epsilon cos 2 α, where epsilon is Lindhard's reduced energy and α the angle of incidence for the ions. The measured values are smaller than those calculated. This can be explained by surface roughness which developed during the ion irradiation

Softening of metals under hydrogen ion irradiation

International Nuclear Information System (INIS)

Guseva, M.I.; Korshunov, S.N.; Martynenko, Yu.V.; Skorlupkin, I.D.

2005-01-01

Experimental study results are presented on steel type 18-10 creep under hydrogen ion irradiation. The Irradiation of annealed specimens is accomplished by 15 keV H 2 + ions with a dose up to 10 22 m -2 at current density of 0.6 A/m 2 at temperatures of 570-770 K. Creep tests show that the irradiation at T = 770 K results in a sharp increase of creep rate. At t 570 K the effect of ion-induced creep in steel 18-10 is not observed. The model is proposed which explains the ion-induced creep by accumulation of hydrogen along grain boundaries, their weakening and removal of obstacles to sliding [ru

Effect of solute atoms on collision cascades in copper and molybdenum irradiated with self-ions

International Nuclear Information System (INIS)

English, C.A.; Eyre, B.L.; Wadley, H.; Stathopoulos, A.Y.

1975-01-01

An examination of the effect material purity has on the numbers and sizes of the vacancy loops formed in collision cascades produced by self-ion irradiation of copper and molybdenum is reported. It is shown that substitutional and interstitial impurities both markedly reduce the damage generated in molybdenum by 60 keV Mo + ions but little effect is seen in copper irradiated by 30 keV Cu + ions. These results are compared with recent observations of vacancy defects in type 316 stainless steel following irradiation with 40-200 keV Cr + . The comparison highlights the much lower vacancy concentration retained in visible clusters in the complex alloy

Evolution of porous network in GaSb under normally incident 60 keV Ar{sup +}-ion irradiation

Energy Technology Data Exchange (ETDEWEB)

Datta, D.P. [SUNAG Laboratory, Institute of Physics, Bhubaneswar 751 005, Odisha (India); Kanjilal, A. [Department of Physics, Shiv Nadar University, Gautam Budh Nagar 203 207, Uttar Pradesh (India); Garg, S.K. [SUNAG Laboratory, Institute of Physics, Bhubaneswar 751 005, Odisha (India); Sahoo, P.K. [School of Physical Sciences, National Institute of Science Education and Research, Bhubaneswar 751 005, Odisha (India); Satpati, B. [Surface Physics and Material Science Division, Saha Institute of Nuclear Physics, 1/AF Bidhannagar, Kolkata 700 064 (India); Kanjilal, D. [Inter-University Accelerator Center, Aruna Asaf Ali Marg, New Delhi 110 067 (India); Som, T., E-mail: tsom@iopb.res.in [SUNAG Laboratory, Institute of Physics, Bhubaneswar 751 005, Odisha (India)

2014-08-15

Highlights: • We show the evolution of a nanoporous layer in GaSb under Ar{sup +}-ion bombardment at normal incidence in the hitherto unexplored high fluence regime, namely 7 × 10{sup 16}–3 × 10{sup 18} ions cm{sup −2}. • Fluence dependent formation and growth of patches on top of the nanoporous layer is demonstrated by scanning electron microscopy. • We also show high amount of oxidation of such ion-beam-generated nanoporous structures, with formation of Ga{sub 2}O{sub 3} and Sb{sub 2}O{sub 3}. • Our study reveals the presence of nanocrystallites within the porous layer even at the highest fluence used in the experiment. • We interpret the experimental observations through a qualitative model where we take into account the effect of re-deposition of atoms sputtered from the nanoporous layer during Ar{sup +}-ion irradiation of GaSb. - Abstract: GaSb(1 0 0) samples were irradiated with 60 keV Ar{sup +}-ions at normal incidence for fluences in the range of 7 × 10{sup 16} to 3 × 10{sup 18} ions cm{sup −2} at room temperature, showing gradual evolution of a porous surface layer containing interconnected nanofibers. In particular, fluence dependent formation of patches on the nanoporous layer is observed by scanning electron microscopy. Combined results of grazing incidence x-ray diffraction and transmission electron microscopy reveal the presence of nanocrystallites in the porous structures. Compositional analysis by x-ray photoelectron spectroscopy indicates the development of oxide phases, mainly Ga{sub 2}O{sub 3} and Sb{sub 2}O{sub 3} where the former increases with fluence. We have proposed a model addressing a competition between ion-induced-defect driven growth of the nanoporous layer and redeposition of sputtered target atoms on the growing layer.

Effect of dose on the evolution of cavities in 500-KeV 4He+-ion irradiated nickel

International Nuclear Information System (INIS)

Fenske, G.; Das, S.K.; Kaminsky, M.; Miley, G.H.

1979-01-01

Transmission electron microscopy has been used to investigate the effect of total dose on the depth distribution of cavities (voids or bubbles) in nickel irradiated at 500 0 C with 500-keV 4 He + ions. A transverse sectioning technique, which allows one to obtain the entire depth distribution of cavities and of damage from a single specimen, was utilized. The size, number density and volume fraction of bubbles or voids were measured from the micrographs taken from samples sectioned parallel to the direction of the incident beam. The results for the dose range studied (2 x 10 19 to 1 x 10 21 ions/m 2 ) show that the average cavity diameter, number density, and the volume fraction (i.e., swelling) increases with increasing dose. The peak in the swelling distribution occurs at depths 8 to 15% deeper than the peak in the calculated projected range profile

Ion irradiation effects in structural and magnetic properties of Co/Cu multilayers

International Nuclear Information System (INIS)

Sakamoto, Isao; Okazaki, Satoshi; Koike, Masaki; Honda, Shigeo

2012-01-01

400 keV Ar ion (the Ar ion) and 50 keV He ion (the He ion) irradiations were performed in order to elucidate roles of Co/Cu interfacial structures in physical origins of giant magnetoresistance (GMR) in the [Co (2 nm)/Cu (2 nm)] 30 multilayers (MLs). The magnetoresistance (MR) ratio after the Ar ion irradiation decreases abruptly with increasing Ar ion fluence. On the other hand, the MR ratio after the He ion irradiation decreases slowly with increasing He ion fluence. The Ar ion irradiation induces the decrease in the difference (R max − R sat ) between the maximum resistance (R max ) and the saturated resistance (R sat ) under in-plane magnetic field and the increase in the R sat , although the effect of the He ion irradiation is not remarkable. The decrease in the (R max − R sat ) rather than the increase in the R sat seems to be effective for the decrease in the MR ratios after the Ar ion and the He ion irradiation. The increase in the R sat implies the mixing of Co atoms in Cu layers. The antiferromagnetic coupling fraction (AFF) estimated from the magnetization curves after the Ar ion and the He ion irradiation shows the similar behavior with the MR ratio as a function of ion fluence. Therefore, although the degrees of the irradiation effects by the Ar ion and the He ions are different, we suggest the relation between the GMR and the AFF affected by the ion-induced interfacial structures accompanied with the atomic mixing in the interfacial region.

Molecular nature of mutations induced by high-LET irradiation with argon and carbon ions in Arabidopsis thaliana

International Nuclear Information System (INIS)

Hirano, Tomonari; Kazama, Yusuke; Ohbu, Sumie; Shirakawa, Yuki; Liu Yang; Kambara, Tadashi; Fukunishi, Nobuhisa; Abe, Tomoko

2012-01-01

Linear energy transfer (LET) is an important parameter to be considered in heavy-ion mutagenesis. However, in plants, no quantitative data are available on the molecular nature of the mutations induced with high-LET radiation above 101–124 keV μm −1 . In this study, we irradiated dry seeds of Arabidopsis thaliana with Ar and C ions with an LET of 290 keV μm −1 . We analyzed the DNA alterations caused by the higher-LET radiation. Mutants were identified from the M 2 pools. In total, 14 and 13 mutated genes, including bin2, egy1, gl1, gl2, hy1, hy3–5, ttg1, and var2, were identified in the plants derived from Ar- and C-ions irradiation, respectively. In the mutants from both irradiations, deletion was the most frequent type of mutation; 13 of the 14 mutated genes from the Ar ion-irradiated plants and 11 of the 13 mutated genes from the C ion-irradiated plants harbored deletions. Analysis of junction regions generated by the 2 types of irradiation suggested that alternative non-homologous end-joining was the predominant pathway of repair of break points. Among the deletions, the proportion of large deletions (>100 bp) was about 54% for Ar-ion irradiation and about 64% for C-ion irradiation. Both current results and previously reported data revealed that the proportions of the large deletions induced by 290-keV μm −1 radiations were higher than those of the large deletions induced by lower-LET radiations (6% for 22.5–30.0 keV μm −1 and 27% for 101–124 keV μm −1 ). Therefore, the 290 keV μm −1 heavy-ion beams can effectively induce large deletions and will prove useful as novel mutagens for plant breeding and analysis of gene functions, particularly tandemly arrayed genes.

Molecular nature of mutations induced by high-LET irradiation with argon and carbon ions in Arabidopsis thaliana

Energy Technology Data Exchange (ETDEWEB)

Hirano, Tomonari; Kazama, Yusuke [Nishina Center for Accelerator-Based Science, RIKEN, 2-1 Hirosawa, Wako, Saitama 351-0198 (Japan); Innovation Center, RIKEN, 2-1 Hirosawa, Wako, Saitama 351-0198 (Japan); Ohbu, Sumie; Shirakawa, Yuki; Liu Yang; Kambara, Tadashi; Fukunishi, Nobuhisa [Nishina Center for Accelerator-Based Science, RIKEN, 2-1 Hirosawa, Wako, Saitama 351-0198 (Japan); Abe, Tomoko, E-mail: tomoabe@riken.jp [Nishina Center for Accelerator-Based Science, RIKEN, 2-1 Hirosawa, Wako, Saitama 351-0198 (Japan); Innovation Center, RIKEN, 2-1 Hirosawa, Wako, Saitama 351-0198 (Japan)

2012-07-01

Linear energy transfer (LET) is an important parameter to be considered in heavy-ion mutagenesis. However, in plants, no quantitative data are available on the molecular nature of the mutations induced with high-LET radiation above 101-124 keV {mu}m{sup -1}. In this study, we irradiated dry seeds of Arabidopsis thaliana with Ar and C ions with an LET of 290 keV {mu}m{sup -1}. We analyzed the DNA alterations caused by the higher-LET radiation. Mutants were identified from the M{sub 2} pools. In total, 14 and 13 mutated genes, including bin2, egy1, gl1, gl2, hy1, hy3-5, ttg1, and var2, were identified in the plants derived from Ar- and C-ions irradiation, respectively. In the mutants from both irradiations, deletion was the most frequent type of mutation; 13 of the 14 mutated genes from the Ar ion-irradiated plants and 11 of the 13 mutated genes from the C ion-irradiated plants harbored deletions. Analysis of junction regions generated by the 2 types of irradiation suggested that alternative non-homologous end-joining was the predominant pathway of repair of break points. Among the deletions, the proportion of large deletions (>100 bp) was about 54% for Ar-ion irradiation and about 64% for C-ion irradiation. Both current results and previously reported data revealed that the proportions of the large deletions induced by 290-keV {mu}m{sup -1} radiations were higher than those of the large deletions induced by lower-LET radiations (6% for 22.5-30.0 keV {mu}m{sup -1} and 27% for 101-124 keV {mu}m{sup -1}). Therefore, the 290 keV {mu}m{sup -1} heavy-ion beams can effectively induce large deletions and will prove useful as novel mutagens for plant breeding and analysis of gene functions, particularly tandemly arrayed genes.

Change of Cr atoms distribution in Fe85Cr15 alloy caused by 250 keV He+ ion irradiation to different doses

International Nuclear Information System (INIS)

Dubiel, S.M.; Żukrowski, J.

2015-01-01

Highlights: • Effect of He-ion irradiation dose on Fe 85 Cr 15 alloy. • Irradiation-induced clustering of Cr atoms. • Irradiation-caused reorientation of the surface magnetization vector. • Irradiation-caused increase of Fe-site spin-density. - Abstract: Redistribution of Cr atoms in a Fe 85 Cr 15 alloy caused by its irradiation with 250 keV He + ions to different doses, D = 8 ⋅ 10 16 , 16 ⋅ 10 16 and 48 ⋅ 10 16 ions/cm 2 was investigated by means of conversion electrons Mössbauer spectroscopy. The redistribution was expressed in terms of the Warren–Cowley short-range order parameters α 1 , α 2 and α 12 pertaining to the first (1NN), second (2NN) and both i.e. 1NN + 2NN shells, respectively. Clear evidence was found, both for non-irradiated and irradiated samples that the actual distribution of Cr atoms is characteristic of the shell, and for a given shell it depends on the irradiation dose. In particular, α 1 is positive, hence indicates an under population of Cr atoms in 1NN with respect to the random case, α 2 is negative, giving evidence thereby that 2NN is overpopulated by Cr atoms, and α 12 is weakly positive. Under the applied irradiation the number of Cr atoms in both neighbor shells decreased signifying thereby a clustering of Cr atoms. The underlying decrease of Cr concentration within the 1NN–2NN volume around the probe Fe atoms was estimated at 1.5 at.% ranging between 2.1 for the lowest and 0.8 at.% for the highest dose

Spectroscopic characterization of ion-irradiated multi-layer graphenes

Energy Technology Data Exchange (ETDEWEB)

Tsukagoshi, Akira [Graduate School of Engineering, University of Hyogo, Himeji, Hyogo 671-2280 (Japan); RIKEN SPring-8 Center, Sayo, Hyogo 679-5148 (Japan); Honda, Shin-ichi, E-mail: s-honda@eng.u-hyogo.ac.jp [Graduate School of Engineering, University of Hyogo, Himeji, Hyogo 671-2280 (Japan); RIKEN SPring-8 Center, Sayo, Hyogo 679-5148 (Japan); Osugi, Ryo [Graduate School of Engineering, University of Hyogo, Himeji, Hyogo 671-2280 (Japan); RIKEN SPring-8 Center, Sayo, Hyogo 679-5148 (Japan); Okada, Hiraku [Graduate School of Engineering, University of Hyogo, Himeji, Hyogo 671-2280 (Japan); Niibe, Masahito [Laboratory of Advanced Science and Technology for Industry, University of Hyogo, Kamigori, Hyogo 678-1205 (Japan); Terasawa, Mititaka [Laboratory of Advanced Science and Technology for Industry, University of Hyogo, Kamigori, Hyogo 678-1205 (Japan); RIKEN SPring-8 Center, Sayo, Hyogo 679-5148 (Japan); Hirase, Ryuji; Izumi, Hirokazu; Yoshioka, Hideki [Hyogo Prefectural Institute of Technology, Kobe 654-0037 (Japan); Niwase, Keisuke [Hyogo University of Teacher Education, Kato, Hyogo 673-1494 (Japan); Taguchi, Eiji [Research Center for Ultra-High Voltage Electron Microscopy, Osaka University, Ibaraki, Osaka 567-0047 (Japan); Lee, Kuei-Yi [Department of Electronic Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan (China); Oura, Masaki [RIKEN SPring-8 Center, Sayo, Hyogo 679-5148 (Japan)

2013-11-15

Low-energy Ar ions (0.5–2 keV) were irradiated to multi-layer graphenes and the damage process, the local electronic states, and the degree of alignment of the basal plane, and the oxidation process upon ion irradiation were investigated by Raman spectroscopy, soft X-ray absorption spectroscopy (XAS) and in situ X-ray photoelectron spectroscopy (XPS). By Raman spectroscopy, we observed two stages similar to the case of irradiated graphite, which should relate to the accumulations of vacancies and turbulence of the basal plane, respectively. XAS analysis indicated that the number of sp{sup 2}-hybridized carbon (sp{sup 2}-C) atoms decreased after ion irradiation. Angle-resolved XAS revealed that the orientation parameter (OP) decreased with increasing ion energy and fluence, reflecting the turbulence of the basal plane under irradiation. In situ XPS shows the oxidation of the irradiated multi-layer graphenes after air exposure.

Low-energy irradiation effects of gas cluster ion beams

International Nuclear Information System (INIS)

Houzumi, Shingo; Takeshima, Keigo; Mochiji, Kozo; Toyoda, Noriaki; Yamada, Isao

2007-01-01

A cluster-ion irradiation system with cluster-size selection has been developed to study the effects of the cluster size for surface processes using cluster ions. A permanent magnet with a magnetic field of 1.2 T is installed for size separation of large cluster ions. Trace formations at HOPG surface by the irradiation with size-selected Ar-cluster ions under acceleration energy of 30 keV were investigated by a scanning tunneling microscopy. Generation behavior of the crater-like traces is strongly affected by the number of constituent atoms (cluster size) of the irradiating cluster ion. When the incident cluster ion is composed of 100-3000 atoms, crater-like traces are observed on the irradiated surfaces. In contrast, such traces are not observed at all with the irradiation of the cluster-ions composed of over 5000 atoms. Such the behavior is discussed on the basis of the kinetic energy per constituent atom of the cluster ion. To study GCIB irradiation effects against macromolecule, GCIB was irradiated on DNA molecules absorbed on graphite surface. By the GCIB irradiation, much more DNA molecules was sputtered away as compared with the monomer-ion irradiation. (author)

Disintegration of C60 by Xe ion irradiation

International Nuclear Information System (INIS)

Kalish, R.; Samoiloff, A.; Hoffman, A.; Uzan-Saguy, C.

1993-01-01

The Changes in resistivity of fullerene (C 60 ) films subject to 320 keV Xe ion irradiation are investigated as a function of ion dose. From a comparison of this dependence with similar data on other Xe irradiated C containing insulating materials and with data on C implanted fused quartz, it is concluded that upon ion impact C 60 clusters completely disintegrate. This disintegration releases about 60 C atoms which disperse amongst the remaining intact C 60 spheres giving rise to hopping conductivity between isolated C atoms. 16 refs., 3 figs

Experimental modeling of high burn-up structure in SIMFUEL with ion irradiation

International Nuclear Information System (INIS)

Baranov, V.; Isaenkova, M.; Lunev, A.; Tenishev, A.; Khlunov, A.

2013-01-01

Experiments are conducted to simulate high burn-up structure in accelerator conditions. Three ion irradiation schemes are used: 1. Xe 27+ 160 MeV up to 5x10 15 cm -2 (thermal spikes). 2. Xe 16+ 320 keV up to 1x10 17 cm -2 (collision cascades). 3. He + 20 keV up to 5,5x10 17 cm -2 (implantation stage). Structural characterization performed by scanning electron microscopy, X-ray analysis and atomic force microscopy revealed prominent grain refinement in case of Xe 27+ irradiation. Artificial energy variation for incident ions showed varying size of subgrains. At maximum energy of incident ions, subgrain size amounts ∼ 320 nm. Moving to the edge of irradiated region changes the size to ∼ 170 nm. Typical size of coherent scattering regions matches subgrain size for high-energy irradiation. Low-energy irradiation results in less significant structural changes: flaky structure at random sites for samples irradiated with low-energy xenon ions and bubble nucleation for helium irradiation. Dislocation density increases significantly, and it is shown that a single fluence dependence exists for low- and high-energy irradiation. (authors)

Experiments on secondary ion emission with multicharged keV ion bombardement

International Nuclear Information System (INIS)

Della Negra, S.; Depauw, J.; Joret, H.; Le Beyec, Y.; Schweikert, E.A.

1987-01-01

An electron cyclotron resonance ion source was used to study the influence of the incident charge state of keV ions on secondary ion emission. The experiments were run with 18 keV Arn+ (1 < n < 11) beams produced by a minimafios source. Various types of targets were bombarded by the ion beam and the sputtered ionized species were identified by time of flight mass spectrometry. The experimental arrangement is detailed and preliminary results are indicated

Irradiation of tungsten with metallic diatomic molecular ions: atomic-resolution observations of depleted zones

International Nuclear Information System (INIS)

Pramanik, D.; Seidman, D.N.

1982-08-01

Direct evidence, on an atomic scale, is presented for the enhancement of damage production per projectile ion in diatomic metallic molecular ion (dimer) irradiations of tungsten as compared to monatomic metallic ion (monomer) irradiations. Irradiations were performed in situ at less than or equal to 10 K, in a field-ion microscope, employing 20 keV Ag + or W + monomer ions and the results are compared with 40 keV W 2 + or Ag 2 + dimer ion bombardments; the average energy per ion was 20 keV. First, in the near-surface region the depleted zones produced by the W 2 + dimer ions give rise to void-like contrast effects. The W + monomer ions do not produce this void-like damage. The existence of voids was explained employing a nucleation and diffusion-limited growth model which suggests that the growth can occur on a time scale -9 s, if the effective diffusivity of an atom in the fully-developed collision cascade is > 3 x 10 -4 cm 2 s -1 . Second, by counting the number of vacancies in individual depleted zones, produced by the different ions, it was demonstrated that the number of vacancies produced per incoming ion of the dimer is 1.55 times greater than the number of vacancies produced per monomer ion

Hardness enhancement and crosslinking mechanisms in polystyrene irradiated with high energy ion-beams

International Nuclear Information System (INIS)

Lee, E.H.; Rao, G.R.; Mansur, L.K.

1996-01-01

Surface hardness values several times larger than steel were produced using high energy ion beams at several hundred keV to MeV. High LET is important for crosslinking. Crosslinking is studied by analyzing hardness variations in response to irradiation parameter such as ion species, energy, and fluence. Effective crosslinking radii at hardness saturation are derived base on experimental data for 350 keV H + and 1 MeV Ar + irradiation of polystyrene. Saturation value for surface hardness is about 20 GPa

Effect of swift heavy ion-irradiation on Cr/Fe/Ni multilayers

International Nuclear Information System (INIS)

Gupta, Ratnesh; Gupta, Ajay; Avasthi, D.K.; Principi, G.; Tosello, C.

1999-01-01

A multilayer film having overall composition Fe 50 Cr 25 Ni 25 , was irradiated successively by 80 MeV Si ions and Ag ions of 150 and 200 MeV energy. The energy deposited in the multilayer in the form of electronic excitations results in significant modification at the interfaces. The interfacial roughness increases in the system after the irradiations as revealed by X-ray reflectivity measurement. Moessbauer measurements provide evidence of intermixing after the irradiation by 200 MeV Ag ions. Comparison of heavy ion irradiated multilayer has been done with annealed and low energy ion irradiated samples. Results suggest that the phases formed at the interfaces of iron as a result of electronic energy loss are similar to those in the cases of thermal diffusion and keV energy ion beam irradiation

Stereophotogrammetric study of surface topography in ion irradiated silver

International Nuclear Information System (INIS)

Sokolov, V.N.; Fayazov, I.M.

1993-01-01

The irradiated surface topography of polycrystalline silver was studied using the stereophotogrammetric method. The surface of silver was irradiated with 30 keV argon ions at variation for the ion incidence angle in interval of 0-80 deg relative to a surface normal. The influence of the inclination angle of the sample in the SEM on the cone shape of a SEM-picture of the irradiated surface is discussed. The parameters of cones on the irradiated surface of silver were measured by the SEM-stereomethod. The measurements of the sample section perpendicular to the incidence plane are also carried out

Topography evolution of 500 keV Ar(4+) ion beam irradiated InP(100) surfaces - formation of self-organized In-rich nano-dots and scaling laws.

Science.gov (United States)

Sulania, Indra; Agarwal, Dinesh C; Kumar, Manish; Kumar, Sunil; Kumar, Pravin

2016-07-27

We report the formation of self-organized nano-dots on the surface of InP(100) upon irradiating it with a 500 keV Ar(4+) ion beam. The irradiation was carried out at an angle of 25° with respect to the normal at the surface with 5 different fluences ranging from 1.0 × 10(15) to 1.0 × 10(17) ions per cm(2). The morphology of the ion-irradiated surfaces was examined by atomic force microscopy (AFM) and the formation of the nano-dots on the irradiated surfaces was confirmed. The average size of the nano-dots varied from 44 ± 14 nm to 94 ± 26 nm with increasing ion fluence. As a function of the ion fluence, the variation in the average size of the nano-dots has a great correlation with the surface roughness, which changes drastically up to the ion fluence of 1.0 × 10(16) ions per cm(2) and attains almost a saturation level for further irradiation. The roughness and the growth exponent values deduced from the scaling laws suggest that the kinetic sputtering and the large surface diffusion steps of the atoms are the primary reasons for the formation of the self-organized nanodots on the surface. X-ray photo-electron spectroscopy (XPS) studies show that the surface stoichiometry changes with the ion fluence. With irradiation, the surface becomes more indium (In)-rich owing to the preferential sputtering of the phosphorus atoms (P) and the pure metallic In nano-dots evolve at the highest ion fluence. The cross-sectional scanning electron microscopy (SEM) analysis of the sample irradiated with the highest fluence showed the absence of the nanostructuring beneath the surface. The surface morphological changes at this medium energy ion irradiation are discussed in correlation with the low and high energy experiments to shed more light on the mechanism of the well separated nano-dot formation.

Characteristics of > 290 keV magnetosheath ions

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A. Rigas

Full Text Available We performed a statistical analysis of 290-500 keV ion data obtained by IMP-8 during the years 1982-1988 within the earth's magnetosheath and analysed in detail some time periods withdistinct ion bursts. These studies reveal the following characteristics for magnetosheath 290-500 keV energetic ions: (a the occurrence frequency and the flux of ions increase with increasing geomagnetic activity as indicated by the Kp index; the occurrence frequency was found to be as high as P > 42% for Kp > 2, (b the occurrence frequency in the dusk magnetosheath was found to be slightly dependent on the local time and ranged between ~30% and ~46% for all Kp values; the highest occurrence frequency was detected near the dusk magnetopause (21 LT, (c the high energy ion bursts display a dawn-dusk asymmetry in their maximum fluxes, with higher fluxes appearing in the dusk magnetosheath, and (d the observations in the dusk magnetosheath suggest that there exist intensity gradients of energetic ions from the bow shock toward the magnetopause. The statistical results are consistent with the concept that leakage of magnetospheric ions from the dusk magnetopause is a semi-permanent physical process often providing the magnetosheath with high energy (290-500 keV ions.Key words. Magnetospheric physics (magnetosheath; planetary magnetospheres. Space plasma physics (shock waves.

Moessbauer study of defects in molybdenum and chromium irradiated with ions

International Nuclear Information System (INIS)

Troyan, V.A.; Bogdanov, V.V.; Ivanyushkin, E.M.; Pen'kov, Yu.P.

1980-01-01

Effects of ion irradiation of monocrystalline molybdenum and polycrystalline chromium with Co-57 impurity were studied by Moessbauer effect. Molybdenum specimens were irradiated by He + ions at accelerators with 40 keV energy. Chromium specimens were irradiated by hydrogen ions with 1.2 MeV energy up to integral 2x10 17 -2x10 19 ion/cm 2 doses. It is shown, that defect introduction into the source matrix by irradiation results in change of gamma-resonance line form and effect value. The observed effects of defect influence on spectrum parameters are discussed. It is concluded, that study of Moessbauer spectra parameters of diluted Co-57 solutions in matrices of different metals permits to determine dynamics of movement of impurity atoms and defects in metals irradiated with ions [ru

Simulating the ballistic effects of ion irradiation in the binary collision approximation: A first step toward the ion mixing framework

International Nuclear Information System (INIS)

Demange, G.; Antoshchenkova, E.; Hayoun, M.; Lunéville, L.; Simeone, D.

2017-01-01

Understanding ballistic effects induced by ion beam irradiation can be a key point for controlling and predicting the microstructure of irradiated materials. Meanwhile, the ion mixing framework suggests an average description of displacement cascades may be sufficient to estimate the influence of ballistic relocations on the microstructure. In this work, the BCA code MARLOWE was chosen for its ability to account for the crystal structure of irradiated materials. A first set of simulations was performed on pure copper for energies ranging from 0.5 keV to 20 keV. These simulations were validated using molecular dynamics (MD). A second set of simulations on AgCu irradiated by 1 MeV krypton ions was then carried out using MARLOWE only, as such energy is beyond reach for molecular dynamics. MARLOWE simulations are found to be in good agreement with experimental results, which suggests the predictive potential of the method.

Simulating the ballistic effects of ion irradiation in the binary collision approximation: A first step toward the ion mixing framework

Energy Technology Data Exchange (ETDEWEB)

Demange, G., E-mail: gilles.demange@univ-rouen.fr [DEN/MDN/SRMA/LA2M, CEA Saclay, F-91191 Gif-sur-Yvette (France); Antoshchenkova, E. [DEN/MDN/SRMA/LA2M, CEA Saclay, F-91191 Gif-sur-Yvette (France); Hayoun, M. [LSI, École Polytechnique, CNRS, CEA Saclay, Université Paris-Saclay, F-91128 Palaiseau (France); Lunéville, L. [DEN/SERMA/LLPR, CEA Saclay, F-91191 Gif sur Yvette (France); Simeone, D. [DEN/MDN/SRMA/LA2M, CEA Saclay, F-91191 Gif-sur-Yvette (France)

2017-04-01

Understanding ballistic effects induced by ion beam irradiation can be a key point for controlling and predicting the microstructure of irradiated materials. Meanwhile, the ion mixing framework suggests an average description of displacement cascades may be sufficient to estimate the influence of ballistic relocations on the microstructure. In this work, the BCA code MARLOWE was chosen for its ability to account for the crystal structure of irradiated materials. A first set of simulations was performed on pure copper for energies ranging from 0.5 keV to 20 keV. These simulations were validated using molecular dynamics (MD). A second set of simulations on AgCu irradiated by 1 MeV krypton ions was then carried out using MARLOWE only, as such energy is beyond reach for molecular dynamics. MARLOWE simulations are found to be in good agreement with experimental results, which suggests the predictive potential of the method.

Tailoring magnetism by light-ion irradiation

International Nuclear Information System (INIS)

Fassbender, J; Ravelosona, D; Samson, Y

2004-01-01

Owing to their reduced dimensions, the magnetic properties of ultrathin magnetic films and multilayers, e.g. magnetic anisotropies and exchange coupling, often depend strongly on the surface and interface structure. In addition, chemical composition, crystallinity, grain sizes and their distribution govern the magnetic behaviour. All these structural properties can be modified by light-ion irradiation in an energy range of 5-150 keV due to the energy loss of the ions in the solid along their trajectory. Consequently the magnetic properties can be tailored by ion irradiation. Similar effects can also be observed using Ga + ion irradiation, which is the common ion source in focused ion beam lithography. Examples of ion-induced modifications of magnetic anisotropies and exchange coupling are presented. This review is limited to radiation-induced structural changes giving rise to a modification of magnetic parameters. Ion implantation is discussed only in special cases. Due to the local nature of the interaction, magnetic patterning without affecting the surface topography becomes feasible, which may be of interest in applications. The main patterning technique is homogeneous ion irradiation through masks. Focused ion beam and ion projection lithography are usually only relevant for larger ion masses. The creation of magnetic feature sizes below 50 nm is shown. In contrast to topographic nanostructures the surrounding area of these nanostructures can be left ferromagnetic, leading to new phenomena at their mutual interface. Most of the material systems discussed here are important for technological applications. The main areas are magnetic data storage applications, such as hard magnetic media with a large perpendicular magnetic anisotropy or patterned media with an improved signal to noise ratio and magnetic sensor elements. It will be shown that light-ion irradiation has many advantages in the design of new material properties and in the fabrication technology of

Dual ion beam irradiation system for in situ observation with electron microscope

International Nuclear Information System (INIS)

Tsukamoto, Tetuo; Hojou, Kiiti; Furuno, Sigemi; Otsu, Hitosi; Izui, Kazuhiko.

1993-01-01

We have developed a new in situ observation system for dynamic processes under dual ion beam irradiation. The system consists of a modified 400 keV analytical electron microscope (JEOL, JEM-4000FX) and two 40 kV ion beam accelerators. This system allows evaluation of microscopic changes of structure and chemical bonding state of materials in the dynamic processes under two kinds of ion beam irradiations, that is required for the simulation test of the first wall of nuclear fusion reactors onto which He + , H + , and H 2 + ions are irradiated simultaneously. These two ion accelerators were equipped symmetrically both sides of the electron microscope and individually controlled. Each ion beam extracted from a duo-plasmatron ion gun is bent downward by an angle of 30deg with a mass-separating magnet, and introduced into specimen chamber of the electron microscope. Inside the specimen chamber the beam is deflected again by an angle of 30deg with an electrostatic prism so as to be incident on the specimen surface. Finally, two ion beams from both side are incident on the specimen surface at an angle of 60deg. The maximum ion current density of helium is more than 250μA/cm 2 at the specimen at an ion energy of 17 keV. Images of the electron microscope during dual ion beam irradiation are observed through a TV camera and recorded with a VTR. (author)

Deactivation of group III acceptors in silicon during keV electron irradiation

International Nuclear Information System (INIS)

Sah, C.; Sun, J.Y.; Tzou, J.J.; Pan, S.C.

1983-01-01

Experimental results on p-Si metal-oxide-semiconductor capacitors (MOSC's) are presented which demonstrate the electrical deactivation of the acceptor dopant impurity during 8-keV electron irradiation not only in boron but also aluminum and indium-doped silicon. The deactivation rates of the acceptors during the 8-keV electron irradiation are nearly independent of the acceptor impurity type. The final density of the remaining active acceptor approaches nonzero values N/sub infinity/, with N/sub infinity/(B) Al--H>In-H. These deactivation results are consistent with our hydrogen bond model. The thermal annealing or regeneration rate of the deactivated acceptors in the MOSC's irradiated by 8-keV electron is much smaller than that in the MOSC's that have undergone avalanche electron injection, indicating that the keV electron irradiation gives rise to stronger hydrogen-acceptor bond

Si-nanoparticle synthesis using ion implantation and MeV ion irradiation

Energy Technology Data Exchange (ETDEWEB)

Chulapakorn, T.; Wolff, M.; Primetzhofer, D.; Possnert, G. [Uppsala University, Department of Physics and Astronomy, P.O. Box 516, 751 20 Uppsala (Sweden); Sychugov, I.; Suvanam, S.S.; Linnros, J. [Royal Institute of Technology, School of Information and Communication Technology, P.O. Box Electrum 229, 164 40 Kista (Sweden); Hallen, A. [Uppsala University, Department of Physics and Astronomy, P.O. Box 516, 751 20 Uppsala (Sweden); Royal Institute of Technology, School of Information and Communication Technology, P.O. Box Electrum 229, 164 40 Kista (Sweden)

2015-12-15

A dielectric matrix with embedded Si-nanoparticles may show strong luminescence depending on nanoparticles size, surface properties, Si-excess concentration and matrix type. Ion implantation of Si ions with energies of a few tens to hundreds of keV in a SiO{sub 2} matrix followed by thermal annealing was identified as a powerful method to form such nanoparticles. The aim of the present work is to optimize the synthesis of Si-nanoparticles produced by ion implantation in SiO{sub 2} by employing MeV ion irradiation as an additional annealing process. The luminescence properties are measured by spectrally resolved photoluminescence including PL lifetime measurement, while X-ray reflectometry, atomic force microscopy and ion beam analysis are used to characterize the nanoparticle formation process. The results show that the samples implanted at 20%-Si excess atomic concentration display the highest luminescence and that irradiation of 36 MeV {sup 127}I ions affects the luminosity in terms of wavelength and intensity. It is also demonstrated that the nanoparticle luminescence lifetime decreases as a function of irradiation fluence. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Depth distribution of bubbles in He-ion irradiated nickel and the mechanism of blister formation

International Nuclear Information System (INIS)

Fenske, G.; Das, S.K.; Kaminsky, M.; Miley, G.H.

1978-01-01

Studies carried out to understand the experimental observation that the blister skin thickness for many metals irradiated with He + ions of energies lower than 20 keV is a factor of two or more larger than the calculated projected range are reported. Nickel foils were used with 20 and 500 keV helium ions

Direct observation of the point-defect structure of depleted-zones in ion-irradiated metals

International Nuclear Information System (INIS)

Wei, C.

1978-01-01

The point-defect structure of individual depleted zones has been studied systematically. Four-pass zone-refined tungsten field-ion microscope (FIM) specimens were irradiated in-situ at 10 K with 30 keV Cr + , Mo + , or W + ions to a total dose of (2 to 10) x 10 12 ion cm -2 and examined by the pulse field-evaporation technique at 10 K. The experimental conditions were such that each depleted zone was created by a single incident-ion. The number of vacant lattice sites within a depleted zone was compared with a modified Kinchin--Pease model. The radial distribution function was determined for each depleted zone; it was found that the vacant lattice sites within the volume of each depleted zone tended to exist in a highly clustered state. It was found that the diameter D of each depleted zone was described by the equation D approximately equal to [y 2 ]/sup 1 / 2 / where [y 2 ]/sup 1 / 2 / is the second moment of the theoretical distribution curve, of the fraction of incident ion energy deposited in atom motion, transverse to the direction of the incident ion-beam. The spatial distribution of self-interstitial atoms (SIAs) in a specimen irradiated with 30 keV Cr + ions and in a specimen irradiated with 18 keV Au + ions, at 10 K, was determined. A low bound to the average range of replacement collision sequences (RCSs) was found to be 175 +- 85 A. A detailed FIM study was also made of the vacancy structure of a (220) platelet created by a single 30 keV W + ion in a platinum-4.0 at. % gold alloy; the specimen was irradiated at 40 K and then isochronally warmed to 100 K. The (220) platelet was found to consist of 31 vacant lattice sites, lying in four (220) planes, and clustered in a disc-shaped region which is approximately 20 A in diameter. It was suggested that prismatic dislocation loops lying on (220) type planes in ion or fast neutron irradiated platinum can form as a result of the direct collapse of (220) type vacancy platelets

Influence of ion irradiation induced defects on mechanical properties of copper nanowires

International Nuclear Information System (INIS)

Li, Weina; Sun, Lixin; Xue, Jianming; Wang, Jianxiang; Duan, Huiling

2013-01-01

The mechanical properties of copper nanowires irradiated with energetic ions have been investigated by using molecular dynamics simulations. The Cu ions with energies ranging from 0.2 to 8.0 keV are used in our simulation, and both the elastic properties and yields under tension and compression are analyzed. The results show that two kinds of defects, namely point defects and stacking faults, appear in the irradiated nanowires depending on the incident ion energy. The Young modulus is significantly reduced by the ion irradiation, and the reduction magnitude depends on the vacancy number, which is determined by the ion energy. Moreover, the irradiated nanowires yield at a smaller strain, compared with the unirradiated nanowire. The mechanism for these changes are also discussed

Spatial distribution of upstream magnetospheric ≥50 keV ions

Directory of Open Access Journals (Sweden)

G. C. Anagnostopoulos

2000-01-01

Full Text Available We present for the first time a statistical study of \\geq50 keV ion events of a magnetospheric origin upstream from Earth's bow shock. The statistical analysis of the 50-220 keV ion events observed by the IMP-8 spacecraft shows: (1 a dawn-dusk asymmetry in ion distributions, with most events and lower intensities upstream from the quasi-parallel pre-dawn side (4 LT-6 LT of the bow shock, (2 highest ion fluxes upstream from the nose/dusk side of the bow shock under an almost radial interplanetary magnetic field (IMF configuration, and (3 a positive correlation of the ion intensities with the solar wind speed and the index of geomagnetic index Kp, with an average solar wind speed as high as 620 km s-1 and values of the index Kp > 2. The statistical results are consistent with (1 preferential leakage of ~50 keV magnetospheric ions from the dusk magnetopause, (2 nearly scatter free motion of ~50 keV ions within the magnetosheath, and (3 final escape of magnetospheric ions from the quasi-parallel dawn side of the bow shock. An additional statistical analysis of higher energy (290-500 keV upstream ion events also shows a dawn-dusk asymmetry in the occurrence frequency of these events, with the occurrence frequency ranging between ~16%-~34% in the upstream region.Key words. Interplanetary physics (energetic particles; planetary bow shocks

Spatial distribution of upstream magnetospheric ≥50 keV ions

Directory of Open Access Journals (Sweden)

G. Kaliabetsos

Full Text Available We present for the first time a statistical study of geq50 keV ion events of a magnetospheric origin upstream from Earth's bow shock. The statistical analysis of the 50-220 keV ion events observed by the IMP-8 spacecraft shows: (1 a dawn-dusk asymmetry in ion distributions, with most events and lower intensities upstream from the quasi-parallel pre-dawn side (4 LT-6 LT of the bow shock, (2 highest ion fluxes upstream from the nose/dusk side of the bow shock under an almost radial interplanetary magnetic field (IMF configuration, and (3 a positive correlation of the ion intensities with the solar wind speed and the index of geomagnetic index Kp, with an average solar wind speed as high as 620 km s-1 and values of the index Kp > 2. The statistical results are consistent with (1 preferential leakage of ~50 keV magnetospheric ions from the dusk magnetopause, (2 nearly scatter free motion of ~50 keV ions within the magnetosheath, and (3 final escape of magnetospheric ions from the quasi-parallel dawn side of the bow shock. An additional statistical analysis of higher energy (290-500 keV upstream ion events also shows a dawn-dusk asymmetry in the occurrence frequency of these events, with the occurrence frequency ranging between ~16%-~34% in the upstream region.Key words. Interplanetary physics (energetic particles; planetary bow shocks

Ion beam techniques for analyzing polymers irradiated by ions

International Nuclear Information System (INIS)

Rickards, J.; Zironi, E.P.; Andrade, E.; Dominguez, B.

1992-01-01

In the study of the effects of ion beam irradiation of polymers very large doses can be administered in short times. Thousands of MGy can be produced in a small volume of a sample in a few minutes by bombarding with typical ion beam currents. For instance, in an experiment done to observe the effects of 750 keV proton irradiation PVC, using a collimator of 1 mm diameter, 1 μC of charge integration deposits a dose of 50 MGy. The use of ion beams also opens up the possibility of using the same beam for irradiation and for analysis of the effects, using the well known ion beam analysis techniques. PIXE allows the measurement of chlorine in PVC. Polymers containing fluorine can be measured with the resonant nuclear reaction (RNR) technique, which is specific only to certain elements. The amount of hydrogen in the sample and its profile can be obtained using energy recoil detection analysis (ERDA); carbon, oxygen, and nitrogen can be measured and profiled using Rutherford backscattering (RBS) and also using the (d,p) and (d, α) nuclear reactions (NR). Loss of mass is one effect that can be studied using these techniques. It was studied in two different polymers, PVC and CR-39, in order to determine carbon buildup during ion irradiation. It was concluded that carbon builds up following different mechanisms in these two materials, due to the different possibilities of forming volatile compounds. It is also suggested that CR-39 should be a good material for ion beam lithography. (author)

Thermal release behavior of helium from copper irradiated by He+ ions

International Nuclear Information System (INIS)

Yamauchi, T.; Tokura, S.; Yamanaka, S.; Miyake, M.

1988-01-01

Thermal release behavior of helium from copper irradiated by 20 keV He + ions with a dose of 2x10 15 to 3x10 17 ions/cm 2 has been studied. The shape of the thermal release curves and thew number of helium release peaks strongly depend on the irradiation dose. Results from SEM surface observastion after post-irradiation heating suggested that helium release caused various surface damages such as blistering, flaking, and hole formation. Helium release resulting in small holes was analyzed and helium bubble growth mechanisms are discussed. (orig.)

Surface nanostructuring of TiO2 thin films by ion beam irradiation

International Nuclear Information System (INIS)

Romero-Gomez, P.; Palmero, A.; Yubero, F.; Vinnichenko, M.; Kolitsch, A.; Gonzalez-Elipe, A.R.

2009-01-01

This work reports a procedure to modify the surface nanostructure of TiO 2 anatase thin films through ion beam irradiation with energies in the keV range. Irradiation with N + ions leads to the formation of a layer with voids at a depth similar to the ion-projected range. By setting the ion-projected range a few tens of nanometers below the surface of the film, well-ordered nanorods appear aligned with the angle of incidence of the ion beam. Slightly different results were obtained by using heavier (S + ) and lighter (B + ) ions under similar conditions

Changes of structural and hydrogen desorption properties of MgH2 indused by ion irradiation

Directory of Open Access Journals (Sweden)

Kurko Sandra V.

2010-01-01

Full Text Available Changes in structural and hydrogen desorption properties of MgH2 induced by ion irradiation have been investigated. MgH2 powder samples have been irradiated with 45 keV B3+ and 120 keV Ar8+ions, with ion fluence of 1015 ions/cm2. The effects of ion irradiation are estimated by numerical calculations using SRIM package. The induced material modifications and their consequences on hydrogen dynamics in the system are investigated by XRD, particle size distribution and TPD techniques. Changes of TPD spectra with irradiation conditions suggest that there are several mechanisms involved in desorption process which depend on defect concentration and their interaction and ordering. The results confirmed that the near-surface area of MgH2 and formation of a substoichiometric MgHx (x<2 play a crucial role in hydrogen kinetics and that various concentrations of induced defects substantially influence H diffusion and desorption kinetics in MgH2. The results also confirm that there is possibility to control the thermodynamic parameters by controlling vacancies concentration in the system.

A study of defect cluster formation in vanadium by heavy ion irradiation

Energy Technology Data Exchange (ETDEWEB)

Sekimura, Naoto; Shirao, Yasuyuki; Morishita, Kazunori [Tokyo Univ. (Japan)

1996-10-01

Formation of defect clusters in thin foils of vanadium was investigated by heavy ion irradiation. In the very thin region of the specimens less than 20 nm, vacancy clusters were formed under gold ion irradiation, while very few clusters were detected in the specimens irradiated with 200 and 400 keV self-ions up to 1 x 10{sup 16} ions/m{sup 2}. The density of vacancy clusters were found to be strongly dependent on ion energy. Only above the critical value of kinetic energy transfer density in vanadium, vacancy clusters are considered to be formed in the cascade damage from which interstitials can escape to the specimen surface in the very thin region. (author)

Irradiation characteristics of metal-cluster-complex ions containing diverse multi-elements with large mass differences

International Nuclear Information System (INIS)

Fujiwara, Yukio; Kondou, Kouji; Teranishi, Yoshikazu; Nonaka, Hidehiko; Saito, Naoaki; Fujimoto, Toshiyuki; Kurokawa, Akira; Ichimura, Shingo; Tomita, Mitsuhiro

2007-01-01

Tetrairidium dodecacarbonyl, Ir 4 (CO) 12 , is a metal cluster complex which has a molecular weight of 1104.9. Using a metal-cluster-complex ion source, the interaction between Ir 4 (CO) n + ions (n=0-12) and silicon substrates was studied at a beam energy ranging from 2keV to 10keV at normal incidence. By adjusting Wien-filter voltage, the influence of CO ligands was investigated. Experimental results showed that sputtering yield of silicon bombarded with Ir 4 (CO) n + ions at 10keV decreased with the number of CO ligands. In the case of 2keV, deposition tended to be suppressed by removing CO ligands from the impinging cluster ions. The influence of CO ligands was explained by considering changes in surface properties caused by the irradiation of Ir 4 (CO) n + ions. It was also found that the bombardment with Ir 4 (CO) 7 + ions at 2.5keV caused deposition on silicon target

Anisotropic dewetting of ion irradiated solid films

Energy Technology Data Exchange (ETDEWEB)

Repetto, L., E-mail: luca.repetto@unige.it [Dipartimento di fisica, Università di Genova, Via Dodecaneso 33, 16146 Genova (Italy); Šetina Batič, B. [Inštitut Za Kovinske Materiale in Tehnologije, Lepi pot 11, 1000 Ljubljana (Slovenia); Firpo, G.; Piano, E.; Valbusa, U. [Dipartimento di fisica, Università di Genova, Via Dodecaneso 33, 16146 Genova (Italy)

2013-11-15

Experiments of irradiation with 30 keV Ga ions were conducted on ultrathin chromium films on rippled silicon substrates. The evolution of their surface morphology, as detected by real time scanning electron microscopy, shows an apparent differential sputtering yield for regions of positive and negative curvature which is in contrast with the standard theory for curvature depending sputtering yield. In particular, at the end of the irradiation process, chromium wires are left in the valleys of the substrate. This result was explained in terms of local melting caused by the ion impact and of a process of dewetting under the concurring actions of surface tension and Van der Waals forces while ion sputtering is active. The interpretation of the reported experimental results are fully supported by numeric simulations implementing the same continuum model used to explain ion induced spinodal dewetting. This hierarchical self-organization process breaks the symmetry of previously demonstrated ion induced dewetting, making possible to create new structures by using the same fundamental effects.

TEM study of damage recovery in SiC by swift Xe ion irradiation

International Nuclear Information System (INIS)

Skuratov, V.A.; O’Connell, J.; Sohatsky, A.S.; Neethling, J.

2014-01-01

The microstructure of 4H–SiC samples subsequently irradiated with low energy He (10 keV), Ti (220 keV) and high energy (167 MeV) Xe ions has been studied using cross-sectional transmission electron microscopy. It was found that xenon ions with fluences above 10 13 cm −2 restore crystallinity in a heavily damaged partially amorphous zone. No, or negligible damage recovery is observed in fully amorphized layers of silicon carbide

Electrophoresis examination of strand breaks in plasmid DNA induced by low-energy nitrogen ion irradiation

International Nuclear Information System (INIS)

Zhao Yong; Tan Zheng; Du Yanhua; Qiu Guanying

2003-01-01

To study the effect on plasmid DNA of heavy ion in the energy range of keV where nuclear stopping interaction becomes more important or even predominant, thin film of plasmid pGEM-3Zf(-) DNA was prepared on aluminum surface and irradiated in vacuum ( -3 Pa) by low-energy nitrogen ions with energy of 30 keV (LET=285 keV/μm) at various fluence ranging from 2 x 10 10 to 8.2 x 10 13 ions/cm 2 . DNA strand breaks were analyzed by neutral electrophoresis followed by quantification with image analysis software. Low-energy nitrogen ion irradiation induced single-, double- and multiple double-strand breaks (DSB) and multiple DSB as the dominating form of DNA damages. Moreover, the linear fluence-response relationship at a low fluence range suggests that DSBs are induced predominantly by single ion track. However, strand break production is limited to a short range in the irradiated samples

Effect of Xe ion (167 MeV) irradiation on polycrystalline SiC implanted with Kr and Xe at room temperature

International Nuclear Information System (INIS)

Hlatshwayo, T T; Kuhudzai, R J; Njoroge, E G; Malherbe, J B; O’Connell, J H; Skuratov, V A; Msimanga, M

2015-01-01

The effect of swift heavy ion (Xe 167 MeV) irradiation on polycrystalline SiC individually implanted with 360 keV Kr and Xe ions at room temperature to fluences of 2  ×  10 16 cm −2 and 1  ×  10 16 cm −2 respectively, was investigated using transmission electron microscopy (TEM), Raman spectroscopy and Rutherford backscattering spectrometry (RBS). Implanted specimens were each irradiated with 167 MeV Xe +26 ions to a fluence of 8.3  ×  10 14 cm −2 at room temperature. It was observed that implantation of 360 keV Kr and Xe ions individually at room temperature amorphized the SiC from the surface up to a depth of 186 and 219 nm respectively. Swift heavy ion (SHI) irradiation reduced the amorphous layer by about 27 nm and 30 nm for the Kr and Xe samples respectively. Interestingly, the reduction in the amorphous layer was accompanied by the appearance of randomly oriented nanocrystals in the former amorphous layers after SHI irradiation in both samples. Previously, no similar nanocrystals were observed after SHI irradiations at electron stopping powers of 33 keV nm −1 and 20 keV nm −1 to fluences below 10 14 cm −2 . Therefore, our results suggest a fluence threshold for the formation of nanocrystals in the initial amorphous SiC after SHI irradiation. Raman results also indicated some annealing of radiation damage after swift heavy ion irradiation and the subsequent formation of small SiC crystals in the amorphous layers. No diffusion of implanted Kr and Xe was observed after swift heavy ion irradiation. (paper)

Enhancement of CNT-based filters efficiency by ion beam irradiation

Science.gov (United States)

Elsehly, Emad M.; Chechenin, N. G.; Makunin, A. V.; Shemukhin, A. A.; Motaweh, H. A.

2018-05-01

It is shown in the report that disorder produced by ion beam irradiation can enhance the functionality of the carbon nanotubes. The filters of pressed multiwalled carbon nanotubes (MWNTs) were irradiated by He+ ions of the energy E = 80 keV with the fluence 2 × 1016 ion/cm2. The removal of manganese from aqueous solutions by using pristine and ion beam irradiated MWNTs filters was studied as a function of pH, initial concentration of manganese in aqueous solution, MWNT mass and contact time. The filters before and after filtration were characterized by Raman (RS) and energy dispersive X-ray spectroscopy (EDS) techniques to investigate the deposition content in the filter and defect formation in the MWNTs. The irradiated samples showed an enhancement of removal efficiency of manganese up to 97.5% for 10 ppm Mn concentration, suggesting that irradiated MWNT filter is a better Mn adsorbent from aqueous solutions than the pristine one. Radiation-induced chemical functionalization of MWNTs due to ion beam irradiation, suggesting that complexation between the irradiated MWNTs and manganese ions is another mechanism. This conclusion is supported by EDS and RS and is correlated with a larger disorder in the irradiated samples as follows from RS. The study demonstrates that ion beam irradiation is a promising tool to enhance the filtration efficiency of MWNT filters.

Shape manipulation of ion irradiated Ag nanoparticles embedded in lithium niobate

NARCIS (Netherlands)

Wolf, S.; Rensberg, J.; Johannes, A.; Thomae, R.; Smit, F.; Neveling, R.; Moodley, M.; Bierschenk, T.; Rodriquez, M.; Afra, B.; Hasan, Shakeeb Bin; Rockstuhl, C.; Ridgway, M.; Bharuth-Ram, K.; Ronning, C.

2016-01-01

Spherical silver nanoparticles were prepared by means of ion beam synthesis in lithium niobate. The embedded nanoparticles were then irradiated with energetic 84Kr and 197Au ions, resulting in different electronic energy losses between 8.1 and 27.5 keV nm−1 in the top layer of the samples. Due to

Effects on focused ion beam irradiation on MOS transistors

International Nuclear Information System (INIS)

Campbell, A.N.; Peterson, K.A.; Fleetwood, D.M.; Soden, J.M.

1997-01-01

The effects of irradiation from a focused ion beam (FIB) system on MOS transistors are reported systematically for the first time. Three MOS transistor technologies, with 0.5, 1, and 3 μm minimum feature sizes and with gate oxide thicknesses ranging from 11 to 50 nm, were analyzed. Significant shifts in transistor parameters (such as threshold voltage, transconductance, and mobility) were observed following irradiation with a 30 keV Ga + focused ion beam with ion doses varying by over 5 orders of magnitude. The apparent damage mechanism (which involved the creation of interface traps, oxide trapped charge, or both) and extent of damage were different for each of the three technologies investigated

TEM study of damage recovery in SiC by swift Xe ion irradiation

Energy Technology Data Exchange (ETDEWEB)

Skuratov, V.A., E-mail: skuratov@jinr.ru [Joint Institute for Nuclear Research, Dubna (Russian Federation); O’Connell, J. [Centre for HRTEM, Nelson Mandela Metropolitan University, Port Elizabeth (South Africa); Sohatsky, A.S. [Joint Institute for Nuclear Research, Dubna (Russian Federation); Neethling, J. [Centre for HRTEM, Nelson Mandela Metropolitan University, Port Elizabeth (South Africa)

2014-05-01

The microstructure of 4H–SiC samples subsequently irradiated with low energy He (10 keV), Ti (220 keV) and high energy (167 MeV) Xe ions has been studied using cross-sectional transmission electron microscopy. It was found that xenon ions with fluences above 10{sup 13} cm{sup −2} restore crystallinity in a heavily damaged partially amorphous zone. No, or negligible damage recovery is observed in fully amorphized layers of silicon carbide.

Studies on the bombardment of condensed molecular gases at liquid-He temperatures by keV electrons and light ions

International Nuclear Information System (INIS)

Boergesen, P.

1982-09-01

Films of solid H 2 , D 2 and N 2 were irradiated with keV electrons and ions. Stopping cross sections and ranges of 0.3-10 keV/amu light ions in solid H 2 and D 2 are in good agreement with experimental and theoretical data on gaseous targets. In contrast, both stopping cross section and range measurements in solid N 2 suggest that the stopping here is only about half of that in N 2 -gas. This ''phase-effect'' is further supported by secondary emission measurements. Secondary electron emission coefficients for 2-10 keV H 1 + , H 2 + , H 3 + , D 3 + , D 2 H + , 4 He + , 14 N + and 20 Ne + incident on solids H 2 , D 2 and N 2 are in reasonable agreement with previous results for electron-incidence. The rather large erosion yields for 1-3 keV electrons incident on solid D 2 depend strongly on target thickness (for thin films), but weakly on energy. Bulk yields for 2 keV electrons were approximately 8 H 2 /electron, approximately 4 D 2 /electron and approximately 0.5 N 2 /electron. Secondary ion emission during ion bombardment seems to be predominantly reflected projectiles in the case of N 2 -targets, while it may be explained as sputtered particles from H 2 - and D 2 -targets. Preliminary results on the erosion of solid H 2 and D 2 by keV light ions indicate very large erosion yields (approx. 400 H 2 /atom for 2 keV protons) increasing strongly with energy. (Auth.)

Ionoluminescence properties of polystyrene-hosted fluorophore films induced by helium ions of energy 50-350 keV

Science.gov (United States)

Chakraborty, Subha; Huang, Mengbing

2017-10-01

We report on measurements and analysis of ionoluminescence properties of pure polystyrene films and polystyrene films doped with four types of fluorophores in low kinetic energies (50-350 keV) of ion irradiation. We have developed a theoretical model to understand the experimentally observed ionoluminescence behaviors in terms of scintillation yield from individual ion tracks, photophysical energy transfer mechanisms, and irradiation-induced defects. A comparison of the model and experimental results suggests that singlet up-conversion resulting from triplet-triplet annihilation processes may be responsible for enhanced singlet emission of the fluorophores at high ion beam flux densities. Energy transfer from the polystyrene matrix to the fluorophore molecules has been identified as an effective pathway to increasing the fluorescence efficiency in the doped scintillator films.

Study of SiO2 surface sputtering by a 250-550 keV He+ ion beam during high-resolution Rutherford backscattering measurements

International Nuclear Information System (INIS)

Kusanagi, Susumu; Kobayashi, Hajime

2006-01-01

Decreases in oxygen signal intensities in spectra of high-resolution Rutherford backscattering spectrometry (HRBS) were observed during measurements on a 5-nm thick SiO 2 layer on a Si substrate when irradiated by 250-550 keV He + ions. Shifts in an implanted arsenic profile in a 5-nm thick SiO 2 /Si substrate were also observed as a result of He + ion irradiation. These results lead to the conclusion that the SiO 2 surface was sputtered by He + ions in this energy range

Morphological change of self-organized protrusions of fluoropolymer surface by ion beam irradiation

International Nuclear Information System (INIS)

Kitamura, Akane; Kobayashi, Tomohiro; Satoh, Takahiro; Koka, Masashi; Kamiya, Tomihiro; Suzuki, Akihiro; Terai, Takayuki

2013-01-01

Polytetrafluoroethylene (PTFE) and fluorinated ethylene propylene (FEP) are typical fluoropolymers displaying several desirable technological properties such as electrical insulation and high chemical resistance. When their surfaces are irradiated with ion beams, dense micro-protrusions formed after the emergence and spread of micropores across the entire irradiated area, allowing culture cells to spread on the top of the protrusions. In this study, we investigate the morphological changes introduced in the fluoropolymer surfaces by ion beams as the energy of the beams is increased. When an FEP sample was irradiated with a nitrogen ion beam with an energy of less than 350 keV at 1.0 μA/cm 2 , protrusions were formed with a density between 2 × 10 7 /cm 2 and 2 × 10 8 /cm 2 . However, at energies higher than 350 keV, the protrusions became sparse, and the density dropped to 5 × 10 2 /cm 2 . Protrusions appeared sporadically during irradiation at high energies, and the top of the protrusions appeared as spots inside the sample, which were difficult to etch and became elongated as the erosion of the surface progressed. Erosion was caused by sputtering of FEP molecules and evaporation at notably elevated temperatures on the surface. Analysis based on attenuated total reflectance/Fourier transform infrared spectroscopy showed the presence of C=C bonds as well as –COOH, –C=O, and –OH bonds on all irradiated samples. Their concentration on the surface densely covered with micro-protrusions was higher than that on the surface with sparse protrusions after irradiation at energies exceeding 350 keV. Thus, we determined a suitable range for the ion energy for creating FEP surfaces densely covered with protrusions

Irradiation effects of Ar cluster ion beams on Si substrates

International Nuclear Information System (INIS)

Ishii, Masahiro; Sugahara, Gaku; Takaoka, G.H.; Yamada, Isao

1993-01-01

Gas-cluster ion beams can be applied to new surface modification techniques such as surface cleaning, low damage sputtering and shallow junction formation. The effects of energetic Ar cluster impacts on solid surface were studied for cluster energies of 10-30keV. Irradiation effects were studied by RBS. For Si(111) substrates, irradiated with Ar ≥500 clusters to a dose of 1x10 15 ion/cm 2 at acceleration voltage 15kV, 2x10 14 atoms/cm 2 implanted Ar atoms were detected. In this case, the energy per cluster atom was smaller than 30eV; at this energy, no significant implantation occurs in the case of monomer ions. Ar cluster implantation into Si substrates occurred due to the high energy density irradiation. (author)

Surface damage in TEM thick α-Fe samples by implantation with 150 keV Fe ions

International Nuclear Information System (INIS)

Aliaga, M.J.; Caturla, M.J.; Schäublin, R.

2015-01-01

We have performed molecular dynamics simulations of implantation of 150 keV Fe ions in pure bcc Fe. The thickness of the simulation box is of the same order of those used in in situ TEM analysis of irradiated materials. We assess the effect of the implantation angle and the presence of front and back surfaces. The number and type of defects, ion range, cluster distribution and primary damage morphology are studied. Results indicate that, for the very thin samples used in in situ TEM irradiation experiments the presence of surfaces affect dramatically the damage produced. At this particular energy, the ion has sufficient energy to damage both the top and the back surfaces and still leave the sample through the bottom. This provides new insights on the study of radiation damage using TEM in situ

In-situ field-ion microscope study of the recovery behavior of heavy metal ion-irradiated tungsten, tungsten (rhenium) alloys and molybdenum

International Nuclear Information System (INIS)

Nielsen, C.H.

1977-06-01

Three field ion microscope (FIM) experiments were carried out to study the annealing behavior of heavy ion irradiated tungsten, tungsten (rhenium) alloys and molybdenum. The first experiment dealt with the stage I long-range migration of tungsten self interstitial atoms (SIAs) in high purity tungsten of resistivity ratio, R = 24,000 (R = rho 300 /rho 4 . 2 , where rho 300 and rho 4 . 2 are the room temperature and 0 0 C resistivities). The FIM specimens were irradiated in situ at 18 K with 30 keV W + ions to an average dose of 5 x 10 12 ions cm -2 and subsequently examined by the pulsed-field evaporation technique. The second experiment dealt with the phenomenon of impurity atom trapping of SIAs during long-range migration. It was shown that rhenium atoms in a tungsten matrix tend to capture tungsten SIAs and remain bound up to temperatures as high as 390 K. The final experiment was concerned with the low temperature annealing kinetics of irradiated molybdenum. High purity molybdenum of resistivity ratio R = 5700 was irradiated at 10 K with 30 keV Mo + ions to a dose of approximately 5 x 10 12 ions cm -2 . The results indicated that the electric field has only a minimal effect on the SIA annealing kinetics. This tends to strengthen the contention that the molybdenum SIA becomes mobile at 32 K

Dewetting and nanopattern formation of thin Pt films on SiO2 induced by ion beam irradiation

International Nuclear Information System (INIS)

Hu, Xiaoyuan; Cahill, David G.; Averback, Robert S.

2001-01-01

Dewetting and nanopattern formation of 3 - 10 nm Pt thin films upon ion irradiation is studied using scanning electron microscopy (SEM). Lateral feature size and the fraction of exposed surface area are extracted from SEM images and analyzed as functions of ion dose. The dewetting phenomenon has little temperature dependence for 3 nm Pt films irradiated by 800 keV Kr + at temperatures ranging from 80 to 823 K. At 893 K, the films dewet without irradiation, and no pattern formation is observed even after irradiation. The thickness of the Pt films, in the range 3 - 10 nm, influences the pattern formation, with the lateral feature size increasing approximately linearly with film thickness. The effect of different ion species and energies on the dewetting process is also investigated using 800 keV Kr + and Ar + irradiation and 19.5keVHe + , Ar + , Kr + , and Xe + irradiation. The lateral feature size and exposed surface fraction scale with energy deposition density (J/cm2) for all conditions except 19.5keVXe + irradiation. [copyright] 2001 American Institute of Physics

Magnetic properties changes of MnAs thin films irradiated with highly charged ions

OpenAIRE

Trassinelli , Martino; Gafton , V.; Eddrief , Mahmoud; Etgens , Victor H.; Hidki , S.; Lacaze , Emmanuelle; Lamour , Emily; Luo , X.; Marangolo , Massimiliano; Merot , Jacques; Prigent , Christophe; Reuschl , Regina; Rozet , Jean-Pierre; Steydli , S.; Vernhet , Dominique

2013-01-01

International audience; We present the first investigation on the effect of highly charged ion bombardment on a manganese arsenide thin film. The MnAs films, 150~nm thick, are irradiated with 90 keV Ne$^{9+}$ ions with a dose varying from $1.6\\times10^{12}$ to $1.6\\times10^{15}$~ions/cm$^2$. The structural and magnetic properties of the film after irradiation are investigated using different techniques, namely, X-ray diffraction, magneto-optic Kerr effect and magnetic force microscope. Prelim...

Simulation of alpha decay of actinides in iron phosphate glasses by ion irradiation

Energy Technology Data Exchange (ETDEWEB)

Dube, Charu L., E-mail: dubecharu@gmail.com; Stennett, Martin C.; Gandy, Amy S.; Hyatt, Neil C.

2016-03-15

Highlights: • Alpha decay of actinides in iron phosphate glasses is simulated by employing ion irradiation technique. • FTIR and Raman spectroscopic measurements confirm modification of glass network. • The depolymerisation of glass network after irradiation is attributed to synergetic effect of nuclear and electronic losses. - Abstract: A surrogate approach of ion beam irradiation is employed to simulate alpha decay of actinides in iron phosphate nuclear waste glasses. Bismuth and helium ions of different energies have been selected for simulating glass matrix modification owing to radiolysis and ballistic damage due to recoil atoms. Structural modification and change in coordination number of network former were probed by employing Reflectance Fourier-Transform Infrared (FT-IR), and Raman spectroscopies as a consequence of ion irradiation. Depolymerisation is observed in glass sample irradiated at intermediate energy of 2 MeV. Helium blisters of micron size are seen in glass sample irradiated at low helium ion energy of 30 keV.

Direct observation of the vacancy structure of depleted zones in tungsten ion irradiated at 100K

International Nuclear Information System (INIS)

Wei, C.Y.; Seidman, D.N.

1978-12-01

The structure of depleted zones (DZs) created by the in-situ irradiation of tungsten specimens, at 10 0 K, with 30 keV W + , Mo + or Cr + ions has been studied by field-ion microscopy. As the mass of the 30 keV ion was decreased the following observations were made: (1) the spatial extent of the DZs increased; (2) the vacancy concentration within the DZs decreased; (3) the fraction of isolated monovacancies increased; and (4) subcascades formed within the DZs

Heavy and light ion irradiation damage effects in δ-phase Sc{sub 4}Hf{sub 3}O{sub 12}

Energy Technology Data Exchange (ETDEWEB)

Wen, J. [School of Nuclear Science and Technology, Lanzhou University, Lanzhou, Gansu 730000 (China); Materials Science and Technology Division, Los Alamos National Laboratory, Los Alamos, NM 87545 (United States); Li, Y.H., E-mail: liyuhong@lzu.edu.cn [School of Nuclear Science and Technology, Lanzhou University, Lanzhou, Gansu 730000 (China); Tang, M.; Valdez, J.A.; Wang, Y.Q. [Materials Science and Technology Division, Los Alamos National Laboratory, Los Alamos, NM 87545 (United States); Patel, M.K.; Sickafus, K.E. [Department of Materials Science & Engineering, The University of Tennessee, Knoxville, TN 37996 (United States)

2015-12-15

Polycrystalline δ-phase Sc{sub 4}Hf{sub 3}O{sub 12} was irradiated with light and heavy ions to study the radiation stability of this compound. In order to explore the ion species spectrum effect, the irradiations were performed with 400 keV Ne{sup 2+} ions to fluences ranging from 1 × 10{sup 14} to 1 × 10{sup 15} ions/cm{sup 2}, 600 keV Kr{sup 3+} ions to fluences ranging from 5 × 10{sup 14} to 5 × 10{sup 15} ions/cm{sup 2}, and 6 MeV Xe{sup 26+} ions to fluences ranging from 2 × 10{sup 13} to 1 × 10{sup 15} ions/cm{sup 2}. Irradiated samples were characterized by various techniques including grazing incidence X-ray diffraction (GIXRD) and transmission electron microscopy (TEM). A complete phase transformation from ordered rhombohedral to disordered fluorite was observed by a fluence of 1 × 10{sup 15} ions/cm{sup 2} with 400 keV Ne{sup 2+} ions, equivalent to a peak ballistic damage dose of ∼0.33 displacements per atom (dpa). Meanwhile, the same transformation was also observed by 600 keV Kr{sup 3+} ions at the same fluence of 1 × 10{sup 15} ions/cm{sup 2}, which however corresponds to a peak ballistic damage dose of ∼2.2 dpa. Only a partial O-D transformation was observed for 6 MeV Xe{sup 26+} ions in the fluence range used. Experimental results indicated that the O-D transformation is observed under both electronic and nuclear stopping dominant irradiation regimes. It was also observed that light ions are more efficient than heavy ions in producing the retained defects that are presumably responsible for the O-D phase transformation. The O-D transformation mechanism is discussed in the context of anion oxygen Frenkel defects and cation antisite defects. We concluded that the irradiation induced O-D transformation is easier to occur in δ-phase compounds with partial order of cations than in that with fully disordered cation structures.

Ion irradiation damage in ilmenite at 100 K

International Nuclear Information System (INIS)

Mitchell, J.N.; Yu, N.; Devanathan, R.; Sickafus, K.E.; Nastasi, M.A.

1997-01-01

A natural single crystal of ilmenite (FeTiO 3 ) was irradiated at 100 K with 200 keV Ar 2+ . Rutherford backscattering spectroscopy and ion channeling with MeV He + ions were used to monitor damage accumulation in the surface region of the implanted crystal. At an irradiation fluence of 1 x 10 15 Ar 2+ cm -2 , considerable near-surface He + ion dechanneling was observed, to the extent that ion yield from a portion of the aligned crystal spectrum reached the yield level of a random spectrum. This observation suggests that the near-surface region of the crystal was amorphized by the implantation. Cross-sectional transmission electron microscopy and electron diffraction on this sample confirmed the presence of a 150 nm thick amorphous layer. These results are compared to similar investigations on geikielite (MgTiO 3 ) and spinel (MgAl 2 O 4 ) to explore factors that may influence radiation damage response in oxides

Ion irradiation damage in ilmenite under cryogenic conditions

International Nuclear Information System (INIS)

Mitchell, J.N.; Yu, N.; Devanathan, R.; Sickafus, K.E.; Nastasi, M.A.

1996-01-01

A natural single crystal of ilmenite was irradiated at 100 K with 200 keV Ar 2+ . Rutherford backscattering spectroscopy and ion channeling with 2 MeV He + ions were used to monitor damage accumulation in the surface region of the implanted crystal. At an irradiation fluence of 1 x 10 15 Ar 2+ cm -2 , considerable near-surface He + ion dechanneling was observed, to the extent that ion yield from a portion of the aligned crystal spectrum reached the yield level of a random spectrum. This observation suggests that the near-surface region of the crystal was amorphized by the implantation. Cross-sectional transmission electron microscopy and electron diffraction on this sample confirmed the presence of a 150 mm thick amorphous layer. These results are compared to similar investigations on geikielite (MgTiO 3 ) and spinel (MgAl 2 O 4 ) to explore factors that may influence radiation damage response in oxides

Ion irradiation damage in ilmenite at 100 K

Science.gov (United States)

Mitchell, J.N.; Yu, N.; Devanathan, R.; Sickafus, K.E.; Nastasi, M.A.; Nord, G.L.

1997-01-01

A natural single crystal of ilmenite (FeTiO3) was irradiated at 100 K with 200 keV Ar2+. Rutherford backscattering spectroscopy and ion channeling with 2 MeV He+ ions were used to monitor damage accumulation in the surface region of the implanted crystal. At an irradiation fluence of 1 ?? 1015 Ar2+/cm2, considerable near-surface He+ ion dechanneling was observed, to the extent that ion yield from a portion of the aligned crystal spectrum reached the yield level of a random spectrum. This observation suggests that the near-surface region of the crystal was amorphized by the implantation. Cross-sectional transmission electron microscopy and electron diffraction on this sample confirmed the presence of a 150 nm thick amorphous layer. These results are compared to similar investigations on geikielite (MgTiO3) and spinel (MgAl2O4) to explore factors that may influence radiation damage response in oxides.

Surface damage in cystine, an amino acid dimer, induced by keV ions.

Science.gov (United States)

Salles, R C M; Coutinho, L H; da Veiga, A G; Sant'Anna, M M; de Souza, G G B

2018-01-28

We have studied the interaction of an ion beam (17.6 keV F - ) with cystine, a dimer formed by the binding of two cysteine residues. Cystine can be considered as an ideal prototype for the study of the relevance of the disulfide (-S-S-) chemical bond in biomolecules. For the sake of comparison, the amino acid cysteine has also been subjected to the same experimental conditions. Characterization of the samples by XPS and NEXAFS shows that both pristine cystine and pristine cysteine are found as a dipolar ion (zwitterion). Following irradiation, the dimer and the amino acid show a tendency to change from the dipole ion form to the normal uncharged form. The largest spectral modification was observed in the high resolution XPS spectra obtained at around the N 1s core level for the two biomolecules. The 2p sulfur edge spectra of cysteine and cystine were much less sensitive to radiation effects. We suggest that the disulfide bond (-S-S-) remains stable before and after irradiation, contributing to the larger radiation stability of cystine as compared to the amino acid cysteine.

Study of SiO{sub 2} surface sputtering by a 250-550 keV He{sup +} ion beam during high-resolution Rutherford backscattering measurements

Energy Technology Data Exchange (ETDEWEB)

Kusanagi, Susumu [Materials Analysis Laboratory, Advanced Design Technology Center, Sony Corporation, 4-16-1 Okata Atsugi-shi, Kanagawa 243-0021 (Japan)]. E-mail: susumu.kusanagi@jp.sony.com; Kobayashi, Hajime [Materials Analysis Laboratory, Advanced Design Technology Center, Sony Corporation, 4-16-1 Okata Atsugi-shi, Kanagawa 243-0021 (Japan)

2006-08-15

Decreases in oxygen signal intensities in spectra of high-resolution Rutherford backscattering spectrometry (HRBS) were observed during measurements on a 5-nm thick SiO{sub 2} layer on a Si substrate when irradiated by 250-550 keV He{sup +} ions. Shifts in an implanted arsenic profile in a 5-nm thick SiO{sub 2}/Si substrate were also observed as a result of He{sup +} ion irradiation. These results lead to the conclusion that the SiO{sub 2} surface was sputtered by He{sup +} ions in this energy range.

500 keV Ar2+ ion irradiation induced anatase to brookite phase transformation and ferromagnetism at room temperature in TiO2 thin films

Science.gov (United States)

Bharati, B.; Mishra, N. C.; Kanjilal, D.; Rath, Chandana

2018-01-01

In our earlier report, where we have demonstrated ferromagnetic behavior at room temperature (RT) in TiO2 thin films deposited through electron beam evaporation technique followed by annealing either in Ar or O2 atmosphere [Mohanty et al., Journal of Magnetism and Magnetic Materials 355 (2014) 240-245], here we have studied the evolution of structure and magnetic properties after irradiating the TiO2 thin films with 500 keV Ar2+ ions. The pristine film while exhibits anatase phase, the films become amorphous after irradiating at fluence in the range 1 × 1014 to 1 × 1016 ions/cm2. Increasing the fluence up to 5 × 1016 ions/cm2, amorphous to crystalline phase transformation occurs and the structure becomes brookite. Although anatase to rutile phase transformation is usually reported in literatures, anatase to brookite phase transformation is an unusual feature which we have reported here for the first time. Such anatase to brookite phase transformation is accompanied with grain growth without showing any change in film thickness evidenced from Rutherford's Back Scattering (RBS) measurement. From scanning probe micrographs (SPM), roughness is found to be more in amorphous films than in the crystalline ones. Anatase to brookite phase transformation could be realized by considering the importance of intermediate amorphous phase. Because due to amorphous phase, heat deposited by energetic ions are localized as dissipation of heat is less and as a result, the localized region crystallizes in brookite phase followed by grain growth as observed in highest fluence. Further, we have demonstrated ferromagnetic behavior at RT in irradiated films similar to pristine one, irrespective of their phase and crystallinity. Origin for room temperature ferromagnetism (RTFM) is attributed to the presence of oxygen vacancies which is confirmed by carrying out XPS measurement.

Morphology variation, composition alteration and microstructure changes in ion-irradiated 1060 aluminum alloy

Science.gov (United States)

Wan, Hao; Si, Naichao; Wang, Quan; Zhao, Zhenjiang

2018-02-01

Morphology variation, composition alteration and microstructure changes in 1060 aluminum irradiated with 50 keV helium ions were characterized by field emission scanning electron microscopy (FESEM) equipped with x-ray elemental scanning, 3D measuring laser microscope and transmission electron microscope (TEM). The results show that, helium ions irradiation induced surface damage and Si-rich aggregates in the surfaces of irradiated samples. Increasing the dose of irradiation, more damages and Si-rich aggregates would be produced. Besides, defects such as dislocations, dislocation loops and dislocation walls were the primary defects in the ion implanted layer. The forming of surface damages were related with preferentially sputtering of Al component. While irradiation-enhanced diffusion and irradiation-induced segregation resulted in the aggregation of impurity atoms. And the aggregation ability of impurity atoms were discussed based on the atomic radius, displacement energy, lattice binding energy and surface binding energy.

Effect of ion irradiation on the structure and the surface topography of carbon fiber

International Nuclear Information System (INIS)

Ligacheva, E.A.; Galyaeva, L.V.; Gavrilov, N.V.; Belykh, T.A.; Ligachev, A.E.; Sokhoreva, V.V.

2006-01-01

The effect of C + ion irradiation (40 keV, 10 15 - 10 19 cm -2 ) on the structure and surface topography of high-module carbon fibers is investigated. Interplanar distance and internal stress values are found to be minimal at a radiation dose of 10 17 cm -2 , the height of a layer pack being practically unchanged. The relief of ion irradiated carbon fiber surface constitutes regularly repetitive valleys and ridges spaced parallel with the fiber axis [ru

In-situ observation of damage evolution in TiC crystals during helium ion irradiation

International Nuclear Information System (INIS)

Hojou, K.; Otsu, H.; Furuno, S.; Izui, K.; Tsukamoto, T.

1994-01-01

In-situ observations were performed on bubble formation and growth in TiC during 20 keV helium ion irradiation over the wide range of irradiation temperatures from 12 to 1523 K. No amorphization occurred over this temperature range. The bubble densities and sizes were almost independent of irradiation temperatures from 12 to 1273 K. Remarkable growth and coalescence occurred during irradiation at high temperature above 1423 K and during annealing above 1373 K after irradiation. ((orig.))

Structural and electrical evolution of He ion irradiated hydrocarbon films observed by conductive atomic force microscopy

International Nuclear Information System (INIS)

Fan, Hongyu; Yang, Deming; Sun, Li; Yang, Qi; Niu, Jinhai; Bi, Zhenhua; Liu, Dongping

2013-01-01

Polymer-like hydrocarbon films are irradiated with 100 keV He ion at the fluences of 1.0 × 10 15 –1.0 × 10 17 ions/cm 2 or at the irradiation temperature ranging from 25 to 600 °C. Conductive atomic force microscopy (CAFM) has been used to evaluate the nanoscale electron conducting properties of these irradiated hydrocarbon films. Nanoscale and conducting defects have been formed in the hydrocarbon films irradiated at a relatively high ion fluence (1.0 × 10 17 ions/cm 2 ) or an elevated sample temperature. Analysis indicates that He ion irradiation results in the evolution of polymer-like hydrocarbon into a dense structure containing a large fraction of sp 2 carbon clusters. The sp 2 carbon clusters formed in irradiated hydrocarbon films can contribute to the formation of filament-like conducting channels with a relatively high local field-enhancing factor. Measurements indicate that the growth of nanoscale defects due to He ion irradiation can result in the surface swelling of irradiated hydrocarbon films at a relatively high ion fluences or elevated temperature

A 20 keV electron gun system for the electron irradiation experiments

International Nuclear Information System (INIS)

Mahapatra, S.K.; Dhole, S.D.; Bhoraskar, V.N.

2005-01-01

An electron gun consisting of cathode, focusing electrode, control electrode and anode has been designed and fabricated for the electron irradiation experiments. This electron gun can provide electrons of any energy over the range 1-20 keV, with current upto 50 μA. This electron gun and a Faraday cup are mounted in the cylindrical chamber. The samples are fixed on the Faraday cup and irradiated with electrons at a pressure ∼10 -7 mbar. The special features of this electron gun system are that, at any electron energy above 1 keV, the electron beam diameter can be varied from 5 to 120 mm on the Faraday cup mounted at a distance of 200 mm from the anode in the chamber. The variation in the electron current over the beam spot of 120 mm diameter is less than 15% and the beam current stability is better than 5%. This system is being used for studying the irradiation effects of 1-20 keV energy electrons on the space quality materials in which the irradiation time may vary from a few tens of seconds to hours

A 20 keV electron gun system for the electron irradiation experiments

Energy Technology Data Exchange (ETDEWEB)

Mahapatra, S.K. [Department of Physics, University of Pune, Pune 411007 (India); Dhole, S.D. [Department of Physics, University of Pune, Pune 411007 (India); Bhoraskar, V.N. [Department of Physics, University of Pune, Pune 411007 (India)]. E-mail: vnb@physics.unipune.ernet.in

2005-01-01

An electron gun consisting of cathode, focusing electrode, control electrode and anode has been designed and fabricated for the electron irradiation experiments. This electron gun can provide electrons of any energy over the range 1-20 keV, with current upto 50 {mu}A. This electron gun and a Faraday cup are mounted in the cylindrical chamber. The samples are fixed on the Faraday cup and irradiated with electrons at a pressure {approx}10{sup -7} mbar. The special features of this electron gun system are that, at any electron energy above 1 keV, the electron beam diameter can be varied from 5 to 120 mm on the Faraday cup mounted at a distance of 200 mm from the anode in the chamber. The variation in the electron current over the beam spot of 120 mm diameter is less than 15% and the beam current stability is better than 5%. This system is being used for studying the irradiation effects of 1-20 keV energy electrons on the space quality materials in which the irradiation time may vary from a few tens of seconds to hours.

Effects of ion irradiation on the residual stresses in Cr thin films

International Nuclear Information System (INIS)

Misra, A.; Fayeulle, S.; Kung, H.; Mitchell, T.E.; Nastasi, M.

1998-01-01

Cr films sputtered onto {100}thinspSi substrates at room temperature were found to be under residual tension, as revealed by wafer curvature measurements. A 150 nm thick Cr film was bombarded with 300 keV Ar ions after deposition. The intrinsic residual tensile stress increased slightly and then decreased with further increase in the ion dose. For ion doses >1x10 15 thinspions/cm 2 , the stress in the film became compressive and increased with increasing dose. Transmission electron microscopy revealed that the grain boundaries in as-deposited Cr have columnar porosity. A Cr film, ion irradiated to a dose of 5x10 15 thinspions/cm 2 , showed no grain boundary porosity. The changes in the residual stress during ion irradiation are explained by considering Ar incorporation in the film and the manner in which irradiation may change the interatomic distances and forces. copyright 1998 American Institute of Physics

Irradiation Effect of Argon Ion on Interfacial Structure Fe(2nm/Si(tsi=0.5-2 nm Multilayer thin Film

Directory of Open Access Journals (Sweden)

S. Purwanto

2010-04-01

Full Text Available Investigation includes formation of interfacial structure of Fe(2nm/Si(tSi= 0.5-2 nm multilayer thin film and the behavior of antiferromagnetic coupling between Fe layers due to Argon ion irradiation was investigated. [Fe(2nm/Si]30 multilayers (MLs with a thickness of Si spacer 0.5 - 2 nanometer were prepared on n-type (100 Si substrate by the helicon plasma sputtering method. Irradiation were performed using 400keV Ar ion to investigate the behavior of magnetic properties of the Fe/Si MLs. The magnetization measurements of Fe/Si MLs after 400keV Ar ion irradiation show the degradation of antiferromagnetic behavior of Fe layers depend on the ion doses. The Magnetoresistance (MR measurements using by Four Point Probe (FPP method also confirm that MR ratio decrease after ion irradiation. X-ray diffraction (XRD patterns indicate that the intensity of a satellite peak induced by a superlattice structure does not change within the range of ion dose. These results imply that the surface of interface structures after ion irradiation become rough although the layer structures are maintained. Therefore, it is considered that the MR properties of Fe/Si MLs also are due to the metallic superlattice structures such as Fe/Cr and Co/Cu MLs.

Effects of ion irradiation on the mechanical properties of SiNawOxCyHz sol-gel derived thin films

International Nuclear Information System (INIS)

Lucca, D.A.; Qi, Y.; Harriman, T.A.; Prenzel, T.; Wang, Y.Q.; Nastasi, M.; Dong, J.; Mehner, A.

2010-01-01

A study of the effects of ion irradiation of hybrid organic/inorganic modified silicate thin films on their mechanical properties is presented. NaOH catalyzed SiNa w O x C y H z thin films were synthesized by sol-gel processing from tetraethylorthosilicate (TEOS) and methyltriethoxysilane (MTES) precursors and spin-coated onto Si substrates. After drying at 300 o C, the films were irradiated with 125 keV H + or 250 keV N 2+ at fluences ranging from 1 x 10 14 to 2.5 x 10 16 ions/cm 2 . Nanoindentation was used to characterize the films. Changes in hardness and reduced elastic modulus were examined as a function of ion fluence and irradiating species. The resulting increases in hardness and reduced elastic modulus are compared to similarly processed acid catalyzed silicate thin films.

Ion irradiation of AZO thin films for flexible electronics

Science.gov (United States)

Boscarino, Stefano; Torrisi, Giacomo; Crupi, Isodiana; Alberti, Alessandra; Mirabella, Salvatore; Ruffino, Francesco; Terrasi, Antonio

2017-02-01

Aluminum doped Zinc oxide (AZO) is a promising transparent conductor for solar cells, displays and touch-screen technologies. The resistivity of AZO is typically improved by thermal annealing at temperatures not suitable for plastic substrates. Here we present a non-thermal route to improve the electrical and structural properties of AZO by irradiating the TCO films with O+ or Ar+ ion beams (30-350 keV, 3 × 1015-3 × 1016 ions/cm2) after the deposition on glass and flexible polyethylene naphthalate (PEN). X-ray diffraction, optical absorption, electrical measurements, Rutherford Backscattering Spectrometry and Atomic Force Microscopy evidenced an increase of the crystalline grain size and a complete relief of the lattice strain upon ion beam irradiation. Indeed, the resistivity of thin AZO films irradiated at room temperature decreased of two orders of magnitude, similarly to a thermal annealing at 400 °C. We also show that the improvement of the electrical properties does not simply depend on the strain or polycrystalline domain size, as often stated in the literature.

Calibration of dosimeters at 80-120 keV electron irradiation

DEFF Research Database (Denmark)

Miller, A.; Helt-Hansen, J.

to calibrate thin-film dosimeters (Risø B3 and alanine films) by irradiation at the 80–120 keV electron accelerators. This calibration was compared to a 10MeV calibration, and we show that the radiation response of the dosimeter materials (the radiation chemical yield) is constant at these irradiation energies....... However, dose gradients within the dosimeters, when it is irradiated at low electron energies,mean that calibration function here will depend on both irradiation energy and the required effective point of measurement of the dosimeter. These are general effects that apply to any dosimeter that has a non...

Structural and electrical evolution of He ion irradiated hydrocarbon films observed by conductive atomic force microscopy

Energy Technology Data Exchange (ETDEWEB)

Fan, Hongyu [School of Physics and Materials Engineering, Dalian Nationalities University, Dalian 116600 (China); Yang, Deming [School of Physics and Materials Engineering, Dalian Nationalities University, Dalian 116600 (China); School of Science, Changchun University of Science and Technology, Changchun, Jilin 130022 (China); Sun, Li [School of Physics and Materials Engineering, Dalian Nationalities University, Dalian 116600 (China); School of Physics, Liaoning Normal University, Dalian 116023 (China); Yang, Qi; Niu, Jinhai; Bi, Zhenhua [School of Physics and Materials Engineering, Dalian Nationalities University, Dalian 116600 (China); Liu, Dongping, E-mail: dongping.liu@dlnu.edu.cn [School of Physics and Materials Engineering, Dalian Nationalities University, Dalian 116600 (China); Fujian Key Laboratory for Plasma and Magnetic Resonance, Department of Electronic Science, Aeronautics, School of Physics and Mechanical and Electrical Engineering, Xiamen University, Xiamen, Fujian 361005 (China)

2013-10-01

Polymer-like hydrocarbon films are irradiated with 100 keV He ion at the fluences of 1.0 × 10{sup 15}–1.0 × 10{sup 17} ions/cm{sup 2} or at the irradiation temperature ranging from 25 to 600 °C. Conductive atomic force microscopy (CAFM) has been used to evaluate the nanoscale electron conducting properties of these irradiated hydrocarbon films. Nanoscale and conducting defects have been formed in the hydrocarbon films irradiated at a relatively high ion fluence (1.0 × 10{sup 17} ions/cm{sup 2}) or an elevated sample temperature. Analysis indicates that He ion irradiation results in the evolution of polymer-like hydrocarbon into a dense structure containing a large fraction of sp{sup 2} carbon clusters. The sp{sup 2} carbon clusters formed in irradiated hydrocarbon films can contribute to the formation of filament-like conducting channels with a relatively high local field-enhancing factor. Measurements indicate that the growth of nanoscale defects due to He ion irradiation can result in the surface swelling of irradiated hydrocarbon films at a relatively high ion fluences or elevated temperature.

Boron ion irradiation induced structural and surface modification of glassy carbon

International Nuclear Information System (INIS)

Kalijadis, Ana; Jovanović, Zoran; Cvijović-Alagić, Ivana; Laušević, Zoran

2013-01-01

The incorporation of boron into glassy carbon was achieved by irradiating two different types of targets: glassy carbon polymer precursor and carbonized glassy carbon. Targets were irradiated with a 45 keV B 3+ ion beam in the fluence range of 5 × 10 15 –5 × 10 16 ions cm −2 . For both types of targets, the implanted boron was located in a narrow region under the surface. Following irradiation, the polymer was carbonized under the same condition as the glassy carbon samples (at 1273 K) and examined by Raman spectroscopy, temperature programmed desorption, hardness and cyclic voltammetry measurements. Structural analysis showed that during the carbonization process of the irradiated polymers, boron is substitutionally incorporated into the glassy carbon structure, while for irradiated carbonized glassy carbon samples, boron irradiation caused an increase of the sp 3 carbon fraction, which is most pronounced for the highest fluence irradiation. Further analyses showed that different nature of boron incorporation, and thus changed structural parameters, are crucial for obtaining glassy carbon samples with modified mechanical, chemical and electrochemical properties over a wide range

Radiation damage and deuterium trapping in deuterium-ion-irradiated Fe–9Cr alloy

Energy Technology Data Exchange (ETDEWEB)

Iwakir, Hirotomo, E-mail: iwakiri@edu.u-ryukyu.ac.jp [Faculty and Graduate School of Education, University of the Ryukyus, Nishihara, Okinawa 903-0213 (Japan); Tani, Munechika [Interdisciplinary Graduate School of Engineering Sciences, Kyusyu University, Kasuga, Fukuoka 816-8580 (Japan); Watanabe, Yoshiyuki [Japan Atomic Energy Agency, Rokkasho, Aomori 039-3212 (Japan); Yoshida, Naoaki [Research Institute for Applied Mechanics, Kyushu University, Kasuga, Fukuoka 816-8580 (Japan)

2014-01-15

Thermal desorption of deuterium (D{sub 2}) from deuterium-ion (D{sub 2}{sup +})-irradiated Fe–9Cr was correlated with the microstructural evolution of the alloy during irradiation with 8-keV D{sub 2}{sup +} ions following annealing to determine the retention and desorption behavior of the implanted deuterium and to identify effective traps for them, particularly at high temperature. After irradiation at 573 K, a new desorption stage formed between 650 and 1100 K at higher fluences, and cavities were observed using transmission electron microscopy. The total amount of trapped deuterium following irradiation with a fluence of 3.0 × 10{sup 22} ions/m{sup 2} was 6.8 × 10{sup 17} D{sub 2}/m{sup 2}, or approximately 0.007%. These results indicate that the deuterium atoms recombined to form D{sub 2} molecules at the surfaces of the cavities.

Sputtering of solid nitrogen and oxygen by keV hydrogen ions

DEFF Research Database (Denmark)

Ellegaard, O.; Schou, Jørgen; Stenum, B.

1994-01-01

Electronic sputtering of solid nitrogen and oxygen by keV hydrogen ions has been studied at two low-temperature setups. The yield of the sputtered particles has been determined in the energy regime 4-10 keV for H+, H-2+ and H-3+ ions. The yield for oxygen is more than a factor of two larger than...... that for nitrogen. The energy distributions of the sputtered N2 and O2 molecules were measured for hydrogen ions in this energy regime as well. The yields from both solids turn out to depend on the sum of the stopping power of all atoms in the ion. The yield increases as a quadratic function of the stopping power...

Kr ion irradiation study of the depleted-uranium alloys

Science.gov (United States)

Gan, J.; Keiser, D. D.; Miller, B. D.; Kirk, M. A.; Rest, J.; Allen, T. R.; Wachs, D. M.

2010-12-01

Fuel development for the reduced enrichment research and test reactor (RERTR) program is tasked with the development of new low enrichment uranium nuclear fuels that can be employed to replace existing high enrichment uranium fuels currently used in some research reactors throughout the world. For dispersion type fuels, radiation stability of the fuel-cladding interaction product has a strong impact on fuel performance. Three depleted-uranium alloys are cast for the radiation stability studies of the fuel-cladding interaction product using Kr ion irradiation to investigate radiation damage from fission products. SEM analysis indicates the presence of the phases of interest: U(Al, Si) 3, (U, Mo)(Al, Si) 3, UMo 2Al 20, U 6Mo 4Al 43 and UAl 4. Irradiations of TEM disc samples were conducted with 500 keV Kr ions at 200 °C to ion doses up to 2.5 × 10 19 ions/m 2 (˜10 dpa) with an Kr ion flux of 10 16 ions/m 2/s (˜4.0 × 10 -3 dpa/s). Microstructural evolution of the phases relevant to fuel-cladding interaction products was investigated using transmission electron microscopy.

In situ studies of the kinetics of surface topography development during ion irradiation

International Nuclear Information System (INIS)

Levinskas, R.; Pranevicius, L.

1996-01-01

Studies of the mechanical properties of the materials affected by 25-200 keV H + , He + , Ne + and Ar + ion irradiation in the range of fluences up to 2 · 10 17 cm -2 based on the analysis of acoustic emission signals, kinetics of the surface deformations measured by laser interferometric technique and the variations of the surface acoustic waves propagation velocity are conducted. The acoustic emissions source mechanisms under various ion irradiation conditions are discussed and relative contribution various possible mechanism are indicated. The correlation of experimental results obtained by different methods of analysis is done. (author). 11 refs, 5 figs

The effect of ion irradiation and elevated temperature on the microstructure and the properties of C/W/C/B multilayer coating

Energy Technology Data Exchange (ETDEWEB)

Vlcak, Petr, E-mail: petr.vlcak@fs.cvut.cz

2016-03-01

Graphical abstract: - Highlights: • C/W/C/B multilayer PVD coating was treated by 45 keV nitrogen ion irradiation. • The effect of ion irradiation and elevated temperature on microstructure was analyzed. • Formation of new compounds and degradation of carbon fraction were observed. • The causes of the observed changes in surface properties were discussed. - Abstract: C/W/C/B multi-layer PVD coating with a layer period of 10 nm and 500 nm in thickness was irradiated with 45 keV N ions at fluence of 1 × 10{sup 17} cm{sup −2}. Ion irradiation was performed at room temperature or at an elevated temperature of 500 °C. The microstructure was investigated by X-ray diffraction, by X-ray photoelectron spectroscopy, and by Raman spectroscopy. The results showed that implanted N ions bond both with W atoms and with C atoms. N ion irradiation induced the formation of WC and WC{sub 1−x} phases. The energetic ions transformed the C bonds in defect sp{sup 2} and defect sp{sup 3} hybridizations, resulting in graphitization of the carbon fraction in the multilayer coating. Ion irradiation reduced the cohesive strength of the monolayers, reduced hardness of the C/W/C/B coating, increased its surface roughness and increased its friction coefficient. An elevated temperature during ion irradiation caused a better arrangement of the WC phase and further graphitization of the carbon fraction, in comparison with a coating treated by ion irradiation at room temperature. There is discussion of the causes of the observed changes in surface properties.

Study of point defect clustering in electron and ion irradiated zirconium alloys

International Nuclear Information System (INIS)

Hellio, C.; Boulanger, L.

1986-09-01

Dislocation loops created by 500 keV Zr + ions and 1 MeV electrons in zirconium have a/3 type Burgers vectors, and in ion irradiated samples, loops lie preferentially on planes close to (1010). From in-situ observations of loop growth under 1 MeV electron irradiation in zirconium and dilute Zr (Nb,O) alloys, a strong increase of the vacancy migration energy with oxygen concentration was observed, from 0.72 eV for pure zirconium to 1.7 eV for Zr and Zr-1% Nb doped with 1800 ppm weight oxygen, indicating large trapping of vacancies by O single interstitials or clusters

Experimental Set-up for Irradiation of Solid H2 and D2 with Charged Particles of keV Energies

DEFF Research Database (Denmark)

Sørensen, H.

1976-01-01

crystal film thickness monitor. The target plate, which can be heated so that films are removable by evaporation, may be used both as a calorimeter and as a beam current collector. Methods for measurement of secondary electron emission coefficients were developed, and preliminary measurements were made...... with electrons and hydrogen ions. For electron bombardment, the secondary electron emission coefficient of solid deuterium was much smaller than one. It was shown possible to use the set-up to study beam desorption of very thin films. Furthermore the set-up could be used for measuring the energy......An experimental facility was built where films of solid deuterium (and hydrogen) may be made with known thickness and irradiated with pulsed beams of electrons (up to 3 keV) and light ions (up to 10 keV). Films are made on a target plate held at 2.5–3 K. Film growth rate is calibrated with a quartz...

Irradiation effects in Fe-30%Ni alloy during Ar ion implantation

International Nuclear Information System (INIS)

Soukieh, Mohamad; Al-Mohamad, Ali

1993-12-01

The use of metallic thin films for studying the processes which take place during ion irradiation has recently increased. For example, ion implantation is widely used to study the structural defects in transition metallic thin films such as (Fe, Ni, Co), because it can simulate the effects occurring in nuclear reactors during neutron irradiation especially the swelling of reactor materials. The swelling of metals and alloys is strongly related to the material structure and to the irradiation conditions. The general feature of formation of structural defects as a function of irradiation dosage and annealing temperature is well known. However, the detailed mechanisms are still not well understood. For example, the swelling of iron alloy with 30-35% nickel is very small in comparison with other Ni concentrations, and there is no clear information on the possibility of phase transitions in fe-Ni alloys during irradiation. The aim of this work is to study the phase-structural changes in Fe-30% Ni implanted by high dose of argon ions. The effect of irradiation with low energy argon ions (40 KeV, and fluences of 10.E15 to 10.E17 ions/cm) on the deposited thin films of Fe-30% Ni alloy was investigated using RBS and TEM techniques. The thicknesses of these films were about 65+-10 nm deposited on ceramic, KBr, and Be fiols substrates. Gas bubble formation and profile distribution of the implanted argon ions were investigated. Formation of an ordered phase Fe 3 Ni during irradiation appears to inhibit gas bubble formations in the film structure. (author). 17 refs., 15 figs., 7 tabs

Effects of electronic excitation in 150 keV Ni ion irradiation of metallic systems

Science.gov (United States)

Zarkadoula, Eva; Samolyuk, German; Weber, William J.

2018-01-01

We use the two-temperature model in molecular dynamic simulations of 150 keV Ni ion cascades in nickel and nickel-based alloys to investigate the effect of the energy exchange between the atomic and the electronic systems during the primary stages of radiation damage. We find that the electron-phonon interactions result in a smaller amount of defects and affect the cluster formation, resulting in smaller clusters. These results indicate that ignoring the local heating due to the electrons results in the overestimation of the amount of damage and the size of the defect clusters. A comparison of the average defect production to the Norgett-Robinson-Torrens (NRT) prediction over a range of energies is provided.

Hydrogen retention properties of polycrystalline tungsten and helium irradiated tungsten

International Nuclear Information System (INIS)

Hino, T.; Koyama, K.; Yamauchi, Y.; Hirohata, Y.

1998-01-01

The hydrogen retention properties of a polycrystalline tungsten and tungsten irradiated by helium ions with an energy of 5 keV were examined by using an ECR ion irradiation apparatus and a technique of thermal desorption spectroscopy, TDS. The polycrystalline tungsten was irradiated at RT with energetic hydrogen ions, with a flux of 10 15 H cm -2 and an energy of 1.7 keV up to a fluence of 5 x 10 18 H cm -2 . Subsequently, the amount of retained hydrogen was measured by TDS. The heating temperature was increased from RT to 1000 C, and the heating rate was 50 C min -1 . Below 1000 C, two distinct hydrogen desorption peaks were observed at 200 C and 400 C. The retained amount of hydrogen was observed to be five times smaller than that of graphite, but the concentration in the implantation layer was comparable with that of graphite. Also, the polycrystalline tungsten was irradiated with 5 keV helium ions up to a fluence of 1.4 x 10 18 He cm -2 , and then re-irradiated with 1.7 keV hydrogen ions. The amount of retained hydrogen in this later experiment was close to the value in the case without prior helium ion irradiation. However, the amount of hydrogen which desorbed around the low temperature peak, 200 C, was largely enhanced. The desorption amount at 200 C saturated for the helium fluence of more than 5 x 10 17 He cm -2 . The present data shows that the trapping state of hydrogen is largely changed by the helium ion irradiation. Additionally, 5 keV helium ion irradiation was conducted on a sample pre-implanted with hydrogen ions to simulate a helium ion impact desorption of hydrogen retained in tungsten. The amount of the hydrogen was reduced as much as 50%. (orig.)

Shape manipulation of ion irradiated Ag nanoparticles embedded in lithium niobate

International Nuclear Information System (INIS)

Wolf, Steffen; Rensberg, Jura; Johannes, Andreas; Ronning, Carsten; Thomae, Rainer; Smit, Frederick; Neveling, Retief; Bharuth-Ram, Krish; Moodley, Mathew; Bierschenk, Thomas; Rodriguez, Matias; Afra, Boshra; Ridgway, Mark; Hasan, Shakeeb Bin; Rockstuhl, Carsten

2016-01-01

Spherical silver nanoparticles were prepared by means of ion beam synthesis in lithium niobate. The embedded nanoparticles were then irradiated with energetic "8"4Kr and "1"9"7Au ions, resulting in different electronic energy losses between 8.1 and 27.5 keV nm"−"1 in the top layer of the samples. Due to the high electronic energy losses of the irradiating ions, molten ion tracks are formed inside the lithium niobate in which the elongated Ag nanoparticles are formed. This process is strongly dependent on the initial particle size and leads to a broad aspect ratio distribution. Extinction spectra of the samples feature the extinction maximum with shoulders on either side. While the maximum is caused by numerous remaining spherical nanoparticles, the shoulders can be attributed to elongated particles. The latter could be verified by COMSOL simulations. The extinction spectra are thus a superposition of the spectra of all individual particles. (paper)

Damage growth in Si during self-ion irradiation: A study of ion effects over an extended energy range

International Nuclear Information System (INIS)

Holland, O.W.; El-Ghor, M.K.; White, C.W.

1989-01-01

Damage nucleation/growth in single-crystal Si during ion irradiation is discussed. For MeV ions, the rate of growth as well as the damage morphology are shown to vary widely along the track of the ion. This is attributed to a change in the dominant, defect-related reactions as the ion penetrates the crystal. The nature of these reactions were elucidated by studying the interaction of MeV ions with different types of defects. The defects were introduced into the Si crystal prior to high-energy irradiation by self-ion implantation at a medium energy (100 keV). Varied damage morphologies were produced by implanting different ion fluences. Electron microscopy and ion-channeling measurements, in conjunction with annealing studies, were used to characterize the damage. Subtle changes in the predamage morphology are shown to result in markedly different responses to the high-energy irradiation, ranging from complete annealing of the damage to rapid growth. These divergent responses occur over a narrow range of dose (2--3 times 10 14 cm -2 ) of the medium-energy ions; this range also marks a transition in the growth behavior of the damage during the predamage implantation. A model is proposed which accounts for these observations and provides insight into ion-induced growth of amorphous layers in Si and the role of the amorphous/crystalline interface in this process. 15 refs, 9 figs

60 keV Ar⁺-ion induced modification of microstructural, compositional, and vibrational properties of InSb

Energy Technology Data Exchange (ETDEWEB)

Datta, D. P.; Garg, S. K.; Som, T., E-mail: tsom@iopb.res.in [SUNAG Laboratory, Institute of Physics, Bhubaneswar, Odisha 751005 (India); Satpati, B. [Surface Physics and Materials Science Division, Saha Institute of Nuclear Physics, 1/AF Bidhannagar, Kolkata 700064 (India); Sahoo, P. K. [School of Physical Sciences, National Institute of Science Education and Research, Bhubaneswar 751005, Odisha (India); Kanjilal, A. [Department of Physics, Shiv Nadar University, Uttar Pradesh 203207 (India); Dhara, S. [Surface and Nanoscience Division, Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam 603102 (India); Kanjilal, D. [Inter-University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110067 (India)

2014-10-14

Room temperature irradiation of InSb(111) by 60 keV Ar⁺-ions at normal (0°) and oblique (60°) angles of incidence led to the formation of nanoporous structure in the high fluence regime of 1×10¹⁷ to 3×10¹⁸ ions cm⁻². While a porous layer comprising of a network of interconnected nanofibers was generated by normal ion incidence, evolution of plate-like structures was observed for obliquely incident ions. Systematic studies of composition and structure using energy dispersive x-ray spectroscopy, Raman spectroscopy, x-ray photoelectron spectroscopy, Raman mapping, grazing incidence x-ray diffraction, and cross-sectional transmission electron microscopy revealed a high degree of oxidation of the ion-induced microstructures with the presence of In₂O₃ and Sb₂O₃ phases and presence of nanocrystallites within the nanoporous structures. The observed structural evolution was understood in terms of processes driven by ion-induced defect accumulation within InSb.

Surface structure of Cr0.5 Ti0.5N coatings after heavy ions irradiation and annealing

International Nuclear Information System (INIS)

Kislitsin, Sergey; Gorlachev, Igor; Uglov, Vladimir

2015-01-01

Results of surface structure investigations of TiCrN coating on carbon steel after irradiation by helium, krypton and xenon heavy ions are reported in the present publication. The series of Cr50Ti50N coatings on carbon steel with thickness of 50,..., 300 nm were formed by vacuum arc deposition techniques. Specimens with TiCrN coating on carbon steel were irradiated by low energy 4 He +1 (22 keV) and 4 He +2 (40 keV) ions and high energy Xe +18 and Kr +14 ions with energy of 1.5 MeV/nucleon. Fluence of He ions was 1.0x10 17 ion.cm -2 , fluence of Xe and Kr ions was 5x10 14 -1.0x10 15 ion.cm -2 , irradiation temperature did not exceed 150 deg. C. Study of surface structure was performed by scanning electron microscopy (SEM) and atomic force microscopy (AFM). Methods of Roentgen diffractometry and Rutherford backscattering was applied for determination of structure and thickness of coating. In case of irradiation with Xe +18 and Kr +14 ions an investigation of surface morphology and structure was done after successive two hours vacuum annealing of irradiated samples at temperatures 400 deg. C, 500 deg. C and 600 deg. C. It was shown that after irradiation by Xe and Kr ions on the surface of coating convexities appear, surface density of which correlates with ion flux. In the case of Xe, ions irradiation generated convexities of spherical and elongated shape with dimensions ranging from ten to hundreds nm. In the case of Kr ions, only spherical globules were generated, dimensions of which are 10-30 nm. The most likely explanation of observed surface damage is that: convexities on the surface are generated at ion bombardment of specimens with coating. Convexities are the traces of ions passing through coating and they are due to structural reconstruction at energy release along a trajectory of ions braking. Convexities of elongated shape represent overlapping traces from two passing ions. When the projective range of Xe and Kr ions exceeds coating thickness, damage

Kr ion irradiation study of the depleted-uranium alloys

Energy Technology Data Exchange (ETDEWEB)

Gan, J., E-mail: Jian.Gan@inl.go [Idaho National Laboratory, P.O. Box 1625, Idaho Falls, ID 83415-6188 (United States); Keiser, D.D. [Idaho National Laboratory, P.O. Box 1625, Idaho Falls, ID 83415-6188 (United States); Miller, B.D. [University of Wisconsin, 1500 Engineering Drive, Madison, WI 53706 (United States); Kirk, M.A.; Rest, J. [Argonne National Laboratory, 9700 South Cass Ave., Argonne, IL 60439 (United States); Allen, T.R. [University of Wisconsin, 1500 Engineering Drive, Madison, WI 53706 (United States); Wachs, D.M. [Idaho National Laboratory, P.O. Box 1625, Idaho Falls, ID 83415-6188 (United States)

2010-12-01

Fuel development for the reduced enrichment research and test reactor (RERTR) program is tasked with the development of new low enrichment uranium nuclear fuels that can be employed to replace existing high enrichment uranium fuels currently used in some research reactors throughout the world. For dispersion type fuels, radiation stability of the fuel-cladding interaction product has a strong impact on fuel performance. Three depleted-uranium alloys are cast for the radiation stability studies of the fuel-cladding interaction product using Kr ion irradiation to investigate radiation damage from fission products. SEM analysis indicates the presence of the phases of interest: U(Al, Si){sub 3}, (U, Mo)(Al, Si){sub 3}, UMo{sub 2}Al{sub 20}, U{sub 6}Mo{sub 4}Al{sub 43} and UAl{sub 4}. Irradiations of TEM disc samples were conducted with 500 keV Kr ions at 200 {sup o}C to ion doses up to 2.5 x 10{sup 19} ions/m{sup 2} ({approx}10 dpa) with an Kr ion flux of 10{sup 16} ions/m{sup 2}/s ({approx}4.0 x 10{sup -3} dpa/s). Microstructural evolution of the phases relevant to fuel-cladding interaction products was investigated using transmission electron microscopy.

Cryogenic trapping of keV ion beams at the CSR prototype

Energy Technology Data Exchange (ETDEWEB)

Menk, Sebastian; Blaum, Klaus; Froese, Michael; Grieser, Manfred; Lange, Michael; Orlov, Dimitry; Sieber, Thomas; Hahn, Robert von; Varju, Jozef; Wolf, Andreas [Max-Planck-Institut fuer Kernphysik, Heidelberg (Germany); Heber, Oded; Rappaport, Michael; Zajfman, Daniel [Weizmann Institut of Science, Rehovot (Israel)

2009-07-01

A Cryogenic Trap for Fast ion beams (CTF) was built to explore cooling techniques and test thermal decoupling of ion optics for the development of the electrostatic Cryogenic Storage Ring (CSR). These challenging projects will lead to a new experimental field of atomic and molecular physics with keV ion beams. The cold conditions of 2-10 K minimize the blackbody radiation field and are expected to lead to extremely low restgas densities (equivalent pressure at room temperature {approx}10{sup -13} mbar) which result in long storage lifetimes and for molecular ions to radiative cooling to their ro-vibrational ground states. The CTF consists of two stacks of electrostatic mirror electrodes allowing the storage of up to 20 keV ion beams. Cryogenic ion beam storage has been realized with this device using a liquid helium refrigeration system to cool down the experimental trapping area to few-Kelvin cryogenic temperatures and experiments with cryogenically trapped molecular nitrogen ions have been performed to verify the low vacuum conditions by measuring their storage lifetimes.

Design and fabrication of a Transverse Field Focussing (TFF) 180 keV negative ion accelerator

International Nuclear Information System (INIS)

Matuk, C.A.; Anderson, O.A.; Owren, H.M.; Paterson, J.A.; Purgalis, P.

1985-11-01

The 180 keV Transverse Field Focussing (TFF) negative ion accelerator described is the final component of a negative ion based neutral beam acceleration system which is being developed as proof-of-principle demonstration of a radiation hardened neutral beamline. The 180 keV beamline consists of: a surface conversion negative ion source, a 80 keV pre-accelerator, a TFF pumping, matching, and transport section, and the 180 keV TFF accelerator presented. This beamline is expected to provide 1 A of H - at 180 keV. In the design of the accelerator, particular importance was given to the rigidity of the accelerator electrode mounting structures and to the electrical isolation of the electrodes along with their related cooling lines. An optical alignment scheme was developed to assemble and to insure precision alignment of the electrodes

A Study on the Ion Beam Extraction using Duo-PiGatron Ion source for Vertical Type Ion Beam Facility

Energy Technology Data Exchange (ETDEWEB)

Kim, Bom Sok; Lee, Chan young; Lee, Jae Sang [KAERI, Daejeon (Korea, Republic of)

2015-05-15

In Korea Multipurpose Accelerator Complex (KOMAC), we have started ion beam service in the new beam utilization building since March this year. For various ion beam irradiation services, we are developed implanters such as metal (150keV/1mA), gaseous (200keV/5mA) and high current ion beam facility (20keV/150mA). One of the new one is a vertical type ion beam facility without acceleration tube (60keV/20mA) which is easy to install the sample. After the installation is complete, it is where you are studying the optimal ion beam extraction process. Detailed experimental results will be presented. Vertical Type Ion Beam Facility without acceleration tube of 60keV 20mA class was installed. We successfully extracted 60keV 20mA using Duo- PiGatron Ion source for Vertical Type Ion Beam Facility. Use the BPM and Faraday-cup, is being studied the optimum conditions of ion beam extraction.

Effects of ion irradiation on the mechanical properties of SiNa wO xC yH z sol-gel derived thin films

Science.gov (United States)

Lucca, D. A.; Qi, Y.; Harriman, T. A.; Prenzel, T.; Wang, Y. Q.; Nastasi, M.; Dong, J.; Mehner, A.

2010-10-01

A study of the effects of ion irradiation of hybrid organic/inorganic modified silicate thin films on their mechanical properties is presented. NaOH catalyzed SiNa wO xC yH z thin films were synthesized by sol-gel processing from tetraethylorthosilicate (TEOS) and methyltriethoxysilane (MTES) precursors and spin-coated onto Si substrates. After drying at 300 °C, the films were irradiated with 125 keV H + or 250 keV N 2+ at fluences ranging from 1 × 10 14 to 2.5 × 10 16 ions/cm 2. Nanoindentation was used to characterize the films. Changes in hardness and reduced elastic modulus were examined as a function of ion fluence and irradiating species. The resulting increases in hardness and reduced elastic modulus are compared to similarly processed acid catalyzed silicate thin films.

Ion irradiation-induced diffusion in bixbyite-fluorite related oxides: Dislocations and phase transformation

Energy Technology Data Exchange (ETDEWEB)

Rolly, Gaboriaud, E-mail: Rolly.gaboriaud@univ-poitiers.fr [Institut Pprime, CNRS-University of Poitiers, SP2MI-BP 30179, 86962 Chasseneuil-Futuroscope (France); Fabien, Paumier [Institut Pprime, CNRS-University of Poitiers, SP2MI-BP 30179, 86962 Chasseneuil-Futuroscope (France); Bertrand, Lacroix [CSIC – University of Sevilla, Avenida Américo Vespucio, 49, 41092 Sevilla (Spain)

2014-05-01

Ion-irradiation induced diffusion and the phase transformation of a bixbyite-fluorite related rare earth oxide thin films are studied. This work is focused on yttrium sesquioxide, Y{sub 2}O{sub 3}, thin films deposited on Si (1 0 0) substrates using the ion beam sputtering technique (IBS). As-deposited samples were annealed ant then irradiated at cryogenic temperature (80 K) with 260 keV Xe{sup 2+} at different fluences. The irradiated thin oxide films are characterized by X-ray diffraction. A cubic to monoclinic phase transformation was observed. Analysis of this phenomenon is done in terms of residual stresses. Stress measurements as a function of irradiation fluences were realised using the XRD-sin{sup 2}ψ method. Stress evolution and kinetic of the phase transformation are compared and leads to the role-played by the nucleation of point and extended defects.

Ion irradiation of AZO thin films for flexible electronics

Energy Technology Data Exchange (ETDEWEB)

Boscarino, Stefano; Torrisi, Giacomo; Crupi, Isodiana [IMM-CNR and Dipartimento di Fisica e Astronomia, Università di Catania, via S. Sofia 64, 95123 Catania (Italy); Alberti, Alessandra [CNR-IMM, via Strada VIII 5, 95121 Catania (Italy); Mirabella, Salvatore; Ruffino, Francesco [IMM-CNR and Dipartimento di Fisica e Astronomia, Università di Catania, via S. Sofia 64, 95123 Catania (Italy); Terrasi, Antonio, E-mail: antonio.terrasi@ct.infn.it [IMM-CNR and Dipartimento di Fisica e Astronomia, Università di Catania, via S. Sofia 64, 95123 Catania (Italy)

2017-02-01

Highlights: • Evidence of electrical good quality AZO ultra thin films without thermal annealing. • Evidence of the main role of Oxygen vs. structural parameters in controlling the electrical performances of AZO. • Evidence of the role of the ion irradiation in improving the electrical properties of AZO ultra thin films. • Synthesis of AZO thin films on flexible/plastic substrates with good electrical properties without thermal processes. - Abstract: Aluminum doped Zinc oxide (AZO) is a promising transparent conductor for solar cells, displays and touch-screen technologies. The resistivity of AZO is typically improved by thermal annealing at temperatures not suitable for plastic substrates. Here we present a non-thermal route to improve the electrical and structural properties of AZO by irradiating the TCO films with O{sup +} or Ar{sup +} ion beams (30–350 keV, 3 × 10{sup 15}–3 × 10{sup 16} ions/cm{sup 2}) after the deposition on glass and flexible polyethylene naphthalate (PEN). X-ray diffraction, optical absorption, electrical measurements, Rutherford Backscattering Spectrometry and Atomic Force Microscopy evidenced an increase of the crystalline grain size and a complete relief of the lattice strain upon ion beam irradiation. Indeed, the resistivity of thin AZO films irradiated at room temperature decreased of two orders of magnitude, similarly to a thermal annealing at 400 °C. We also show that the improvement of the electrical properties does not simply depend on the strain or polycrystalline domain size, as often stated in the literature.

In-situ observations of the development of heavy-ion damage in semiconductors

International Nuclear Information System (INIS)

Jenkins, M.L.; Chandler, T.J.; Robertson, I.M.; Kirk, M.A.

1985-01-01

In-situ observations on ion-beam induced amorphisation of GaAs, GaP and Si are reported. Direct-impact amorphisation was found to occur in GaAs irradiated with 100-keV Xe + ions to low doses at low temperature (approx. 40K) in contrast to previous room temperature irradiations. In GaP and in silicon, where heavy projectiles do cause direct impact amorphisation at room temperature, the evolution of the damage structure with ion-dose was studied. The defect yield both in GaP irradiated with 100-keV Kr + ions and in Si irradiated with 100-keV Xe + ions was found to decrease monotonically with increasing dose over the dose range 10 15 to 10 17 ions m -2

Ion-irradiation induced chemical ordering of FePt and FePtAu nanoparticles

Energy Technology Data Exchange (ETDEWEB)

Seetala, Naidu V. [Department of Physics, Grambling State University, RWE Jones Drive, Carver Hall 81, Grambling, LA 71245 (United States)]. E-mail: naidusv@gram.edu; Harrell, J.W. [MINT Center, University of Alabama, Tuscaloosa, AL 35487 (United States); Lawson, Jeremy [MINT Center, University of Alabama, Tuscaloosa, AL 35487 (United States); Nikles, David E. [MINT Center, University of Alabama, Tuscaloosa, AL 35487 (United States); Williams, John R. [Department of Physics, Auburn University, Auburn, AL 36849 (United States); Isaacs-Smith, Tamara [Department of Physics, Auburn University, Auburn, AL 36849 (United States)

2005-12-15

We have studied the effect of ion-beam irradiation on reducing the ordering temperature of FePt and FePtAu nanoparticles. FePt and FePt(Au14%) 4 nm particles dispersed on a Si-substrate were irradiated by 300 keV Al-ions with a dose of 1 x 10{sup 16} ions/cm{sup 2} at 43 {sup o}C using a water-cooled flange in order to minimize the vacancy migration and voids formation within the collision cascades. Partial chemical ordering has been observed in as-irradiated particles with coercivity of 60-130 Oe. Post-irradiation annealing at 220 {sup o}C enhanced chemical ordering in FePt nanoparticles with coercivity of 3500 Oe, magnetic anisotropy of 1.5 x 10{sup 7} erg/cc, and thermal stability factor of 130. A much higher 375 {sup o}C post-irradiation annealing was required in FePtAu, presumably because Au atoms were trapped at Fe/Pt lattice sites at lower temperatures. As the annealing temperature increased, anomalous features in the magnetization reversal curves were observed that disappeared at higher annealing temperatures.

Calibration of thin-film dosimeters irradiated with 80-120 kev electrons

DEFF Research Database (Denmark)

Helt-Hansen, J.; Miller, A.; McEwen, M.

2004-01-01

A method for calibration of thin-film dosimeters irradiated with 80-120keV electrons has been developed. The method is based on measurement of dose with a totally absorbing graphite calorimeter, and conversion of dose in the graphite calorimeter to dose in the film dosimeter by Monte Carlo calcul......V electron irradiation. The two calibrations were found to be equal within the estimated uncertainties of +/-10% at 1 s.d. (C) 2004 Elsevier Ltd. All rights reserved....

Reflection properties of hydrogen ions at helium irradiated tungsten surfaces

International Nuclear Information System (INIS)

Doi, K; Tawada, Y; Kato, S; Sasao, M; Kenmotsu, T; Wada, M; Lee, H T; Ueda, Y; Tanaka, N; Kisaki, M; Nishiura, M; Matsumoto, Y; Yamaoka, H

2016-01-01

Nanostructured W surfaces prepared by He bombardment exhibit characteristic angular distributions of hydrogen ion reflection upon injection of 1 keV H + beam. A magnetic momentum analyzer that can move in the vacuum chamber has measured the angular dependence of the intensity and the energy of reflected ions. Broader angular distributions were observed for He-irradiated tungsten samples compared with that of the intrinsic polycrystalline W. Both intensity and energy of reflected ions decreased in the following order: the polycrystalline W, the He-bubble containing W, and the fuzz W. Classical trajectory Monte Carlo simulations based on Atomic Collision in Amorphous Target code suggests that lower atom density near the surface can make the reflection coefficients lower due to increasing number of collisions. (paper)

Phase formation in Zr/Fe multilayers during Kr ion irradiation

International Nuclear Information System (INIS)

Motta, A. T.

1998-01-01

A detailed study has been conducted of the effect of Kr ion irradiation on phase formation in Zr-Fe metallic multilayers, using the Intermediate Voltage Electron Microscopy (IVEM) at Argonne National Laboratory. Metallic multilayers were prepared with different overall compositions (near 50-50 and Fe-rich), and with different wavelengths (repetition thicknesses). These samples were irradiated with 300 keV Kr ions at various temperatures to investigate the final products, as well as the kinetics of phase formation. For the shorter wavelength samples, the final product was in all cases an amorphous Zr-Fe phase, in combination with Fe, while specially for the larger wavelength samples, in the Fe-rich samples the intermetallic compounds ZrFe 2 and Zr 3 Fe were formed in addition to the amorphous phase. The dose to full reaction decreases with temperature, and with wavelength in a manner consistent with a diffusion-controlled reaction

Reduction and structural modification of zirconolite on He{sup +} ion irradiation

Energy Technology Data Exchange (ETDEWEB)

Gupta, Merry, E-mail: g41merry@gmail.com [Sant Longowal Institute of Engineering and Technology, Longowal, Sangrur, Punjab 148106 (India); Kulriya, P.K. [Inter-University Accelerator Centre, Aruna Asaf Ali Road, New Delhi 110067 (India); Department of Mechanical, Aerospace & Nuclear Engineering, Rensselaer Polytechnic Institute, Troy, NY 12180 (United States); Shukla, Rishabh; Dhaka, R.S. [Novel Materials and Interface Physics Laboratory, Department of Physics, Indian Institute of Technology Delhi, New Delhi 110016 (India); Kumar, Raj [Inter-University Accelerator Centre, Aruna Asaf Ali Road, New Delhi 110067 (India); Ghumman, S.S. [Sant Longowal Institute of Engineering and Technology, Longowal, Sangrur, Punjab 148106 (India)

2016-07-15

The immobilization of minor actinides and alkaline-earth metal is a major concern in nuclear industry due to their long-term radioactive contribution to the high level waste (HLW). Materials having zirconolite, pyrochlore, and perovskite structure are promising candidates for immobilization of HLW. The zirconolite which exhibits high radiation stability and corrosion resistance behavior is investigated for its radiation stability against alpha particles in the present study. CaZrTi{sub 2}O{sub 7} pellets prepared using solid state reaction techniques, were irradiated with 30 keV He{sup +} ions for the ion fluence varying from 1 × 10{sup 17} to 1 × 10{sup 21} ions/m{sup 2}. Scanning electron microscopy (SEM) images of the un-irradiated sample exhibited well separated grains with average size of about 6.8 μm. On the ion irradiation, value of the average grains size was about 7.1 μm, and change in the microstructure was insignificant. The X-ray photoelectron spectroscopy (XPS) studies showed a shift in the core level peak position (of Ca 2p, Ti 2p and Zr 3d) towards lower binding energy with respect to pristine sample as well as loss of oxygen was also observed for sample irradiated with the ion fluence of 1 × 10{sup 20} ions/m{sup 2}. These indicate a decrease in co-ordination number and the ionic character of M−O bond. Moreover, core level XPS signal was not detected for sample irradiated with ion fluence of 1 × 10{sup 21} ions/m{sup 2}, suggesting surface damage of the sample at this ion fluence. However, X-ray diffraction (XRD) studies showed that zirconolite was not amorphized even on irradiation up to a fluence order of 1 × 10{sup 21} ion/m{sup 2}. But, significant decrease in peak intensity due to creation of defects and a marginal positive peak shift due to tensile strain induced by irradiation, were observed. Thus, XRD along with XPS investigation suggests that reduction, decrease in co-ordination number, and increase in covalency are responsible for

Damage evolution in Xe-ion irradiated rutile (TiO2) single crystals

International Nuclear Information System (INIS)

Li, F.; Sickafus, K.E.; Evans, C.R.; Nastasi, M.

1999-01-01

Rutile (TiO 2 ) single crystals with (110) orientation were irradiated with 360 keV Xe 2+ ions at 300 K to fluences ranging from 2 x 10 19 to 1 x 10 20 Xe/m 2 . Irradiated samples were analyzed using: (1) Rutherford backscattering spectroscopy combined with ion channeling analysis (RBS/C); and (2) cross-sectional transmission electron microscopy (XTEM). Upon irradiation to a fluence of 2 x 10 19 Xe/m 2 , the sample thickness penetrated by the implanted ions was observed to consist of three distinct layers: (1) a defect-free layer at the surface (thickness about 12 nm) exhibiting good crystallinity; (2) a second layer with a low density of relatively large-sized defects; and (3) a third layer consisting of a high concentration of small defects. After the fluence was increased to 7 x 10 19 Xe/m 2 , a buried amorphous layer was visible by XTEM. The thickness of the amorphous layer was found to increase with increasing Xe ion fluence. The location of this buried amorphous layer was found to coincide with the measured peak in the Xe concentration (measured by RBS/C), rather than with the theoretical maximum in the displacement damage profile. This observation suggests the implanted Xe ions may serve as nucleation sites for the amorphization transformation. The total thickness of the damaged microstructure due to ion irradiation was always found to be much greater than the projected range of the Xe ions. This is likely due to point defect migration under the high stresses induced by ion implantation

Sputtering of solid nitrogen by keV helium ions

DEFF Research Database (Denmark)

Ellegaard, O.; Schou, Jørgen; Sørensen, H.

1993-01-01

Solid nitrogen has become a standard material among the frozen molecular gases for electronic sputtering. We have combined measurements of sputtering yields and energy spectra from nitrogen bombarded by 4-10 keV helium ions. The data show that the erosion is electronic rather than knockon...

Sex- and dose-dependent effects of calcium ion irradiation on behavioral performance of B6D2F1 mice during contextual fear conditioning training

Science.gov (United States)

Raber, Jacob; Weber, Sydney J.; Kronenberg, Amy; Turker, Mitchell S.

2016-06-01

The space radiation environment includes energetic charged particles that may impact behavioral and cognitive performance. The relationship between the dose and the ionization density of the various types of charged particles (expressed as linear energy transfer or LET), and cognitive performance is complex. In our earlier work, whole body exposure to 28Si ions (263 MeV/n, LET = 78keV / μ m ; 1.6 Gy) affected contextual fear memory in C57BL/6J × DBA2/J F1 (B6D2F1) mice three months following irradiation but this was not the case following exposure to 48Ti ions (1 GeV/n, LET = 107keV / μ m ; 0.2 or 0.4 Gy). As an increased understanding of the impact of charged particle exposures is critical for assessment of risk to the CNS of astronauts during and following missions, in this study we used 40Ca ion beams (942 MeV/n, LET = 90keV / μm) to determine the behavioral and cognitive effects for the LET region between that of Si ions and Ti ions. 40Ca ion exposure reduced baseline activity in a novel environment in a dose-dependent manner, which suggests reduced motivation to explore and/or a diminished level of curiosity in a novel environment. In addition, exposure to 40Ca ions had sex-dependent effects on response to shock. 40Ca ion irradiation reduced the response to shock in female, but not male, mice. In contrast, 40Ca ion irradiation did not affect fear learning, memory, or extinction of fear memory for either gender at the doses employed in this study. Thus 40Ca ion irradiation affected behavioral, but not cognitive, performance. The effects of 40Ca ion irradiation on behavioral performance are relevant, as a combination of novelty and aversive environmental stimuli is pertinent to conditions experienced by astronauts during and following space missions.

Fe+ ion irradiation induced changes in structural and magnetic properties of iron films

Directory of Open Access Journals (Sweden)

K. Papamihail

2016-12-01

Full Text Available 490keV Fe+ ion irradiation of 200nm thick Fe films was found to induce both structural and magnetic changes. Both, the lattice constant and the grain size increase as a function of dose and both properties follow the same power law. Irradiation induces a depth dependent magnetic profile consisting of two sublayers. The top Fe sublayer has a magnetic moment higher than that of the Fe before the irradiation whereas the bottom sublayer lower. The two sublayers are connected with the effects of Fe+ irradiation, i.e. the top sublayer with the depth in which mainly radiation damage occurs whereas the bottom one with the implantation of impinging Fe+ ions. The magnetic moments of the two sublayers have a non-monotonous variation with irradiation dose depicting a maximum for the top sublayer and a minimum for the bottom one at 96.2 dpa (‘displacements per atom’. The magnetic moment enhancement/reduction is discussed in relation with the atomic volume variation in the case of atom displacements and/or implantation effects.

Synthesizing single-phase β-FeSi2 via ion beam irradiations of Fe/Si bilayers

International Nuclear Information System (INIS)

Milosavljevic, M.; Dhar, S.; Schaaf, P.; Bibic, N.; Lieb, K.P.

2001-01-01

This paper presents results on the direct synthesis of the β-FeSi 2 phase by ion beam mixing of Fe/Si bilayers with Xe ions. The influence of the substrate temperature, ion fluence and energy on the growth of this phase was investigated using Rutherford backscattering (RBS), X-ray diffraction (XRD) and conversion electron Moessbauer spectroscopy (CEMS). Complete growth of single-phase β-FeSi 2 was achieved by 205 keV Xe ion irradiation to a fluence of 2x10 16 ions/cm 2 at 600 deg. C. We propose a two-step reaction mechanism involving thermal and ion beam energy deposition

Influence of 400 keV carbon ion implantation on structural, optical and electrical properties of PMMA

Energy Technology Data Exchange (ETDEWEB)

Arif, Shafaq, E-mail: sarif2005@gmail.com [Department of Physics, Lahore College for Women University, Lahore 54000 (Pakistan); Rafique, M. Shahid [Department of Physics, University of Engineering & Technology, Lahore 54000 (Pakistan); Saleemi, Farhat; Sagheer, Riffat [Department of Physics, Lahore College for Women University, Lahore 54000 (Pakistan); Naab, Fabian; Toader, Ovidiu [Department of Nuclear Engineering and Radiological Sciences, Michigan Ion Beam Laboratory, University of Michigan, MI 48109-2104 (United States); Mahmood, Arshad; Rashid, Rashad [National Institute of Lasers and Optronics (NILOP), P.O. Nilore, Islamabad (Pakistan); Mahmood, Mazhar [Department of Metallurgy & Materials Engineering, Pakistan Institute of Engineering & Applied Sciences (PIEAS), Islamabad (Pakistan)

2015-09-01

Ion implantation is a useful technique to modify surface properties of polymers without altering their bulk properties. The objective of this work is to explore the 400 keV C{sup +} ion implantation effects on PMMA at different fluences ranging from 5 × 10{sup 13} to 5 × 10{sup 15} ions/cm{sup 2}. The surface topographical examination of irradiated samples has been performed using Atomic Force Microscope (AFM). The structural and chemical modifications in implanted PMMA are examined by Raman and Fourier Infrared Spectroscopy (FTIR) respectively. The effects of carbon ion implantation on optical properties of PMMA are investigated by UV–Visible spectroscopy. The modifications in electrical conductivity have been measured using a four point probe technique. AFM images reveal a decrease in surface roughness of PMMA with an increase in ion fluence from 5 × 10{sup 14} to 5 × 10{sup 15} ions/cm{sup 2}. The existence of amorphization and sp{sup 2}-carbon clusterization has been confirmed by Raman and FTIR spectroscopic analysis. The UV–Visible data shows a prominent red shift in absorption edge as a function of ion fluence. This shift displays a continuous reduction in optical band gap (from 3.13 to 0.66 eV) due to formation of carbon clusters. Moreover, size of carbon clusters and photoconductivity are found to increase with increasing ion fluence. The ion-induced carbonaceous clusters are believed to be responsible for an increase in electrical conductivity of PMMA from (2.14 ± 0.06) × 10{sup −10} (Ω-cm){sup −1} (pristine) to (0.32 ± 0.01) × 10{sup −5} (Ω-cm){sup −1} (irradiated sample)

Dose response of thin-film dosimeters irradiated with 80-120 keV electrons

DEFF Research Database (Denmark)

Helt-Hansen, J.; Miller, A.; Sharpe, P.

2005-01-01

Thin-film dosimeters (Riso B3 and alanine films) were irradiated at 10 MeV and 80-120 keV electron accelerators, and it has been shown that the radiation response of the dosimeter materials (the radiation chemical yields) are constant at these irradiation energies. However, dose gradients within ...... are present within the dosimeter. (C) 2005 Elsevier Ltd. All rights reserved....

MeV ion irradiation effects on the luminescence properties of Si-implanted SiO{sub 2}-thin films

Energy Technology Data Exchange (ETDEWEB)

Chulapakorn, T.; Primetzhofer, D. [Uppsala University, Department of Physics and Astronomy, P.O. Box 516, 751 20 Uppsala (Sweden); Sychugov, I.; Suvanam, S.S.; Linnros, J.; Hallen, A. [Royal Institute of Technology (KTH), School of Information and Communication Technology, P.O. Box Electrum 229, 164 40 Kista (Sweden)

2016-12-15

The effects of MeV heavy ion irradiation at varying fluence and flux on excess Si, introduced in SiO{sub 2} by keV ion implantation, are investigated by photoluminescence (PL). From the PL peak wavelength (λ) and decay lifetime (τ), two PL sources are distinguished: (i) quasi-direct recombination of excitons of Si-nanoparticles (SiNPs), appearing after thermal annealing (λ > 720 nm, τ ∝ μs), and (ii) fast-decay PL, possibly due to oxide-related defects (λ ∝ 575-690 nm, τ ∝ ns). The fast-decay PL (ii) observed before and after ion irradiation is induced by ion implantation. It is found that this fast-decay luminescence decreases for higher irradiation fluence of MeV heavy ions. After thermal annealing (forming SiNPs), the SiNP PL is reduced for samples irradiated by MeV heavy ions but found to stabilize at higher level for higher irradiation flux; the (ii) band vanishes as a result of annealing. The results are discussed in terms of the influence of electronic and nuclear stopping powers. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

First experiments with the 200 keV electron beam ion trap at LLNL

International Nuclear Information System (INIS)

Marrs, R.E.; Knapp, D.A.; Elliott, S.

1993-01-01

A high-energy electron beam ion trap (Super EBIT) is operating at electron energies up to 200 keV and currents up to 200 mA. Highly charged ions up to Li-like U 89+ and H-like Pb 81+ have been produced and studied. Ionization cross sections for H-like Dy 66+ at E e = 170 keV have been measured with respect to radiative recombination from the observed Dy 66+ /Dy 67+ equilibrium ionization balance. A Bragg crystal spectrometer has been used to measure 2s 1/2 -2p 3/2 transition energies in Li-like U 82+ with respect to the Lymann-series transitions in lower-Z hydrogenic ions

Irradiation influence on Mylar and Makrofol induced by argon ions in a plasma immersion ion implantation system

Energy Technology Data Exchange (ETDEWEB)

Hassan, A. [Accelerators & Ion Sources Department, Nuclear Research Center, Atomic Energy Authority, P.O. 13759, Cairo (Egypt); El-Saftawy, A.A., E-mail: aama1978@yahoo.com [Accelerators & Ion Sources Department, Nuclear Research Center, Atomic Energy Authority, P.O. 13759, Cairo (Egypt); Aal, S.A. Abd El [Central Lab. for Elemental & Isotopic Analysis, Nuclear Research Center, Atomic Energy Authority, P.O. 13759, Cairo (Egypt); Ghazaly, M. El [Physiology Department, College of Medicine, Taif University, P.O. 888, Taif (Saudi Arabia); Physics Department, Faculty of Science, Zagazig University, P.O. 44519, Zagazig (Egypt)

2015-08-30

Highlights: • A home-built plasma immersion ion implantation system was tested in modifying surfaces. • Wettability modifications within the energy range 10 keV implantation are not investigated elsewhere, up to our knowledge. • The wettability of Mylar and Makrofol surface was enhanced by the dual effect of ion implantation and plasma treatment. • The improved wettability was found to depend on both surface roughness and chemistry. • The adhesive bonding and surface energy of the polymers are improved. - Abstract: Mylar and Makrofol polycarbonate polymers were irradiated by Ar ions in a plasma immersion ion implantation (PIII) system. The surface wettability of both polymers was investigated by employing the contact angle method. The measured contact angles were found to depend on the surface layer properties. Good wetting surfaces were found to depend not only on surface roughness but also on its chemistry that analyzed by Fourier transform infrared (FTIR) spectroscopy. Surfaces topography and roughness was investigated and correlated to their surface energy which studied with the aid of acid-base model for evaluating the improvement of surface wettability after irradiation. PIII improves polymers surface properties efficiently in a controllable way.

Heavy ion irradiation of crystalline water ice. Cosmic ray amorphisation cross-section and sputtering yield

Science.gov (United States)

Dartois, E.; Augé, B.; Boduch, P.; Brunetto, R.; Chabot, M.; Domaracka, A.; Ding, J. J.; Kamalou, O.; Lv, X. Y.; Rothard, H.; da Silveira, E. F.; Thomas, J. C.

2015-04-01

Context. Under cosmic irradiation, the interstellar water ice mantles evolve towards a compact amorphous state. Crystalline ice amorphisation was previously monitored mainly in the keV to hundreds of keV ion energies. Aims: We experimentally investigate heavy ion irradiation amorphisation of crystalline ice, at high energies closer to true cosmic rays, and explore the water-ice sputtering yield. Methods: We irradiated thin crystalline ice films with MeV to GeV swift ion beams, produced at the GANIL accelerator. The ice infrared spectral evolution as a function of fluence is monitored with in-situ infrared spectroscopy (induced amorphisation of the initial crystalline state into a compact amorphous phase). Results: The crystalline ice amorphisation cross-section is measured in the high electronic stopping-power range for different temperatures. At large fluence, the ice sputtering is measured on the infrared spectra, and the fitted sputtering-yield dependence, combined with previous measurements, is quadratic over three decades of electronic stopping power. Conclusions: The final state of cosmic ray irradiation for porous amorphous and crystalline ice, as monitored by infrared spectroscopy, is the same, but with a large difference in cross-section, hence in time scale in an astrophysical context. The cosmic ray water-ice sputtering rates compete with the UV photodesorption yields reported in the literature. The prevalence of direct cosmic ray sputtering over cosmic-ray induced photons photodesorption may be particularly true for ices strongly bonded to the ice mantles surfaces, such as hydrogen-bonded ice structures or more generally the so-called polar ices. Experiments performed at the Grand Accélérateur National d'Ions Lourds (GANIL) Caen, France. Part of this work has been financed by the French INSU-CNRS programme "Physique et Chimie du Milieu Interstellaire" (PCMI) and the ANR IGLIAS.

Correlation of blister diameter and blister skin thickness in helium-ion-irradiated Nb

International Nuclear Information System (INIS)

Das, S.K.; Kaminsky, M.; Fenske, G.

1979-01-01

A systematic study of the correlation between blister diameter and blister skin thickness has been performed for helium-ion irradiation of monocrystalline and polycrystalline Nb for ion energies ranging from 20 to 500 keV. The results indicate that a relationship Datsub mpatproportionaltatsup 1.50at between the most probable blister diameter, Datsub mpat, and blister skin thickness, t, which has been suggested by other authors, does not exist for the various types of Nb targets studied. For example, for room-temperature irradiation of annealed polycrystalline Nb the experimentally determined relationship is Datsub mpat<10.3tatsup 1.22at. Furthermore, the D-t relationship was found to depend on the irradiation temperature in contrast to theoretical predictions by the lateral stress model of blister formation. These results do not appear to support the lateral stress model which predicts the relationship Dproportionaltatsup 1.5at. However, the experimentally determined relationships can be explained in part by the gas pressure model of blister formation

Effects of H-implantation energy on the optical stability of implanted usher films under photo-irradiation

International Nuclear Information System (INIS)

Awazu, K.; Yasui, H.; Kasamori, M.; Ichikawa, T.; Funada, Y.; Iwaki, M.

1999-01-01

A study has been made on the improvement of the optical stability of urushi films under optical irradiation using ion implantation. Ion implantation of hydrogen ions in urushi films was performed with a dose of 10 15 ions/cm 2 at ion energies ranging from 0.2 to 150 keV at room temperature. The photo-irradiation onto the urushi films was carried out at irradiation energies ranging from 40 to 400 MJ/m 2 . H-implantation onto urushi films is useful for improving the optical stability under photo-irradiation when the implantation energy is larger than 60 keV

Enhanced electrical conductivity in Xe ion irradiated CNT based transparent conducting electrode on PET substrate

Science.gov (United States)

Surbhi; Sharma, Vikas; Singh, Satyavir; Garg, Priyanka; Asokan, K.; Sachdev, Kanupriya

2018-02-01

An investigation of MWCNT-based hybrid electrode films with improved electrical conductivity after Xe ion irradiation is reported. A multilayer hybrid structure of Ag-MWCNT layer embedded in between two ZnO layers was fabricated and evaluated, pre and post 100 keV Xe ion irradiation, for their performance as Transparent Conducting Electrode in terms of their optical and electrical properties. X-ray diffraction pattern exhibits highly c-axis oriented ZnO films with a small variation in lattice parameters with an increase in ion fluence. There is no significant change in the surface roughness of these films. Raman spectra were used to confirm the presence of CNT. The pristine multilayer films exhibit an average transmittance of ˜70% in the entire visible region and the transmittance increases with Xe ion fluence. A significant enhancement in electrical conductivity post-Xe ion irradiation viz from 1.14 × 10-7 Ω-1 cm-1 (pristine) to 7.04 × 103 Ω-1 cm-1 is seen which is due to the high connectivity in the top layer with Ag-CNT hybrid layer facilitating the smooth transfer of electrons.

Grafting of acrylic acid onto polypropylene films irradiated with argon ions

International Nuclear Information System (INIS)

Massa, G.; Mazzei, R.; Garcia Bermudez, G.; Filevich, A.; Smolko, E.

2005-01-01

Polypropylene (PP) foils were irradiated with 100 keV energy Argon ions at different fluences ranging from 10 12 up to 2 x 10 15 cm -2 and then grafted with acrylic acid (AA). The grafting yield was measured by weight difference and the structural changes on the films were analysed using Fourier transform infrared spectroscopy (FTIR). Different parameters that determined the grafting process such us fluence, grafting time and monomer concentration were analysed. The grafting reached an optimum value at 79% in aqueous solution at 30 min grafting time. The grafting yield as a function of the ion fluence plot, presented a maximum value, as previously found in a study of heavy beam on polymers

Effect of He+ fluence on surface morphology and ion-irradiation induced defect evolution in 7075 aluminum alloys

Science.gov (United States)

Ni, Kai; Ma, Qian; Wan, Hao; Yang, Bin; Ge, Junjie; Zhang, Lingyu; Si, Naichao

2018-02-01

The evolution of microstructure for 7075 aluminum alloys with 50 Kev helium ions irradiation were studied by using optical microscopy (OM), scanning electron microscopy (SEM), x-ray diffraction (XRD) and transmission electron microscopy (TEM). The fluences of 1 × 1015, 1 × 1016 and 1 × 1017 ions cm-2 were selected, and irradiation experiments were conducted at room temperatures. The transmission process of He+ ions was simulated by using SRIM software, including distribution of ion ranges, energy losses and atomic displacements. Experimental results show that irradiated pits and micro-cracks were observed on irradiation sample surface, and the size of constituent particles (not including Mg2Si) decreased with the increasing dose. The x-ray diffraction results of the pair of peaks is better resolved in irradiated samples might indicate that the stressed structure consequence due to crystal defects (vacancies and interstitials) after He+ implantation. TEM observation indicated that the density of MgZn2 phase was significantly reduced after helium ion irradiation which is harmful to strength. Besides, the development of compressive stress produced a large amount of dislocation defects in the 1015 ions cm-2 sample. Moreover, higher fluence irradiation produced more dislocations in sample. At fluence of 1016 ions cm-2, dislocation wall formed by dislocation slip and aggregation in the interior of grains, leading to the refinement of these grains. As fluence increased to 1017 ions cm-2, dislocation loops were observed in pinned dislocation. Moreover, dislocation as effective defect sink, irradiation-induced vacancy defects aggregated to these sinks, and resulted in the formation of helium bubbles in dislocation.

380 keV proton irradiation effects on photoluminescence of Eu-doped GaN

International Nuclear Information System (INIS)

Okada, Hiroshi; Nakanishi, Yasuo; Wakahara, Akihiro; Yoshida, Akira; Ohshima, Takeshi

2008-01-01

The effect of 380 keV proton irradiation on the photoluminescence (PL) properties has been investigated for undoped and Eu-doped GaN. As the proton irradiation exceeds 1x10 13 cm -2 , a drastic decrease of PL intensity of the near band-edge emission of undoped GaN was observed. On the other hand, for Eu-doped GaN, the PL emission corresponding to the 5 D 0 → 7 F 2 transition in Eu 3+ kept the initial PL intensity after the proton irradiation up to 1x10 14 cm -2 . Present results, together with our previous report on electron irradiation results, suggest that Eu-doped GaN is a strong candidate for light emitting devices in high irradiation environment

Effects of tube diameter and chirality on the stability of single-walled carbon nanotubes under ion irradiation

International Nuclear Information System (INIS)

Xu Zijian; Zhang Wei; Zhu Zhiyuan; Ren Cuilan; Li Yong; Huai Ping

2009-01-01

Using molecular dynamics method, we investigated the influence of tube diameter and chirality on the stability of single-walled carbon nanotubes (CNTs) under ion irradiation. We found that in the energy range below 1 keV, the dependence of CNT stability on the tube diameter is no longer monotonic under C ion irradiation, and the thinner (5, 5) CNT may be more stable than the thicker (7, 7) CNT, while under Ar irradiation, the CNT stability increases still monotonically with the CNT diameter. This stability behavior was further verified by the calculations of the threshold ion energies to produce displacement damage in CNTs. The abnormal stability of thin CNTs is related to their resistance to the instantaneous deformation in the wall induced by ion pushing, the high self-healing capacity, as well as the different interaction properties of C and Ar ions with CNT atoms. We also found that under ion irradiation the stability of a zigzag CNT is better than that of an armchair CNT with the same diameter. This is because of the bonding structure difference between the armchair and the zigzag CNTs with respect to the orientations of graphitic networks as well as the self-healing capacity difference.

Damage of niobium surfaces caused by bombardment with 4He+ ions of different energies typical for T-20

International Nuclear Information System (INIS)

Guseva, M.I.; Gusev, V.; Martynenko, Yu.V.; Das, S.K.; Kaminsky, N.

1979-01-01

The surface damage of cold worked and annealed polycrystalline Nb irradiated at room temperature with He + ions sequentially at different energies over the range from 0.5 keV to 1.8 MeV has been investigated. The individual energy and the dose of the He + ion was chosen to match the theoretically calculated He + ion spectrum expected in the Tokamak T-20. In one set of irradiations, targets were irradiated at Kurchatov Institute starting with 0.5 keV 4 He + ions and extending up to 90 keV in eleven steps. Subsequently, the same area was irradiated at ANL starting at 150 keV and increased in eight steps up to 1.8 MeV. The irradiations were carried out for a total dose of 5.0 C/cm 2 . In another set of irradiations the sequence was reversed. Scanning electron microscopy results show formation of blisters and exfoliation. For the same dose the broad energy implant (due to sequential irradiation) appears to decrease the blister diameter and density as compared to irradiation with monoenergetic He + ions at a given energy (in the energy range considered). Some estimates of surface erosion yields due to blistering are given

Formation of nanodots and enhancement of thermoelectric power induced by ion irradiation in PbTe:Ag composite thin films

Energy Technology Data Exchange (ETDEWEB)

Bala, Manju, E-mail: manjubala474@gmail.com [Inter-University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110067 (India); Meena, Ramcharan; Gupta, Srashti; Pannu, Compesh [Inter-University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110067 (India); Tripathi, Tripurari S. [Aalto University, Värmemansgränden 2, 02150 Espoo (Finland); Varma, Shikha [Institute of Physics, Bhubaneshwar, Odisha 751005 (India); Tripathi, Surya K. [Department of Physics, Panjab University, Chandigarh 160 014 (India); Asokan, K., E-mail: asokaniuac@gmail.com [Inter-University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110067 (India); Avasthi, Devesh K. [Amity University, Noida 201313, Uttar Pradesh (India)

2016-07-15

Present study demonstrates an enhancement in thermoelectric power of 10% Ag doped PbTe (PbTe:Ag) thin films when irradiated with 200 keV Ar ion. X-ray diffraction showed an increase in crystallinity for both PbTe and PbTe:10Ag nano-composite films after Ar ion irradiation due to annealing of defects in the grain boundaries. The preferential sputtering of Pb and Te ions in comparison to Ag ions resulted in the formation of nano-dots. This was further confirmed by X-ray photoelectron spectroscopy (XPS). Such an enhancement in thermoelectric power of irradiated PbTe:10Ag films in comparison to pristine PbTe:10Ag film is attributed to the decrease in charge carrier concentration that takes part in the transport process via restricting the tunneling of carriers through the wider potential barrier formed at the interface of nano-dots.

Deuterium ion irradiation induced precipitation in Fe–Cr alloy: Characterization and effects on irradiation behavior

International Nuclear Information System (INIS)

Liu, P.P.; Yu, R.; Zhu, Y.M.; Zhao, M.Z.; Bai, J.W.; Wan, F.R.; Zhan, Q.

2015-01-01

Highlights: • A new phase precipitated in Fe–Cr alloy after deuterium ion irradiation at 773 K. • B2 structure was proposed for the Cr-rich new phase. • Strain fields around the precipitate have been measured by GPA. • The precipitate decrease growth rate of dislocation loop under electron irradiation. - Abstract: A new phase was found to precipitate in a Fe–Cr model alloy after 58 keV deuterium ion irradiation at 773 K. The nanoscale radiation-induced precipitate was studied systematically using high resolution transmission electron microscopy (HRTEM), image simulation and in-situ ultrahigh voltage transmission electron microscopy (HVEM). B2 structure is proposed for the new Cr-rich phase, which adopts a cube-on-cube orientation relationship with regard to the Fe matrix. Geometric phase analysis (GPA) was employed to measure the strain fields around the precipitate and this was used to explain its characteristic 1-dimensional elongation along the 〈1 0 0〉 Fe direction. The precipitate was stable under subsequent electron irradiation at different temperatures. We suggest that the precipitate with a high interface-to-volume ratio enhances the radiation resistance of the material. The reason for this is the presence of a large number of interfaces between the precipitate and the matrix, which may greatly reduce the concentration of point defects around the dislocation loops. This leads to a significant decrease in the growth rate

Time-domain vibrational study on defects in ion-irradiated crystal

International Nuclear Information System (INIS)

Kitajima, M.

2003-01-01

We have studied the effects of point defects on coherent phonons in ion-implanted bismuth and graphite. Ultrafast dynamics of coherent phonons and photo-generated carriers in the femtosecond time-domain have been investigated by means of pump-probe reflectivity measurements. Point defects are introduced by irradiating graphite with 5 keV He + ions. For Bi the dephasing rate of the A 1g phonon increases linearly with increasing ion dose, which is explained by the additional dephasing process of the coherent phonon originated from scattering of phonons by the defects. For graphite, introduction of the defects enhances the carrier relaxation by opening a decay channel via vacancy-states, which competes efficiently with carrier-phonon scattering. The coherent acoustic phonon relaxation is also accelerated due to an additional scattering by defects. The linear fluence-dependence of the decay rate is understood as scattering of propagating acoustic phonon by single vacancies. (author)

Preparation of highly oriented poly-diacetylene LB-films with ion beam irradiation

International Nuclear Information System (INIS)

Hosoi, F.; Aoki, Y.; Hagiwara, M.; Omichi, H.

1992-01-01

Langmuir-Blodgett (LB) films such as 10,12-heptacosa-diynoic acid, 10,12-pentacosa-diynoic acid, 10,12-tricosa-diynoic acid were irradiated with ion beam, electron beam and UV-light, and the effect of irradiation on morphology of the polymerized film was studied. A sharp and intense X-ray diffraction pattern with higher order peaks which was not observed in the original films was obtained by Fe + beam irradiation. The interlayer spacing of diacetylene molecules calculated from the X-ray diffraction experiment was much longer than that theoretically anticipated. Similar results were observed when LB-films were treated with Ar + beam of 1keV for a short time although there was little observation of polymerization. In contrast, the diffraction pattern of the films polymerized with UV-light was broad and weak, and higher order peaks disappeared with the increase in irradiation dose. (author)

A cryogenic electrostatic trap for long-time storage of keV ion beams

Science.gov (United States)

Lange, M.; Froese, M.; Menk, S.; Varju, J.; Bastert, R.; Blaum, K.; López-Urrutia, J. R. Crespo; Fellenberger, F.; Grieser, M.; von Hahn, R.; Heber, O.; Kühnel, K.-U.; Laux, F.; Orlov, D. A.; Rappaport, M. L.; Repnow, R.; Schröter, C. D.; Schwalm, D.; Shornikov, A.; Sieber, T.; Toker, Y.; Ullrich, J.; Wolf, A.; Zajfman, D.

2010-05-01

We report on the realization and operation of a fast ion beam trap of the linear electrostatic type employing liquid helium cooling to reach extremely low blackbody radiation temperature and residual gas density and, hence, long storage times of more than 5 min which are unprecedented for keV ion beams. Inside a beam pipe that can be cooled to temperatures <15 K, with 1.8 K reached in some locations, an ion beam pulse can be stored at kinetic energies of 2-20 keV between two electrostatic mirrors. Along with an overview of the cryogenic trap design, we present a measurement of the residual gas density inside the trap resulting in only 2×103 cm-3, which for a room temperature environment corresponds to a pressure in the 10-14 mbar range. The device, called the cryogenic trap for fast ion beams, is now being used to investigate molecules and clusters at low temperatures, but has also served as a design prototype for the cryogenic heavy-ion storage ring currently under construction at the Max-Planck Institute for Nuclear Physics.

A study of ion damage in Al, Al/Cu and Al/Ag

International Nuclear Information System (INIS)

Marikar, P.

1979-06-01

Specimens of pure aluminium, aluminium-copper and aluminium-silver have been irradiated with 20 keV helium ions and/or 100 keV aluminium ions and the nature of the damage assessed using transmission electron microscopy. Irradiation with 20 keV helium ions to a dose of 2.7 x 10 15 ions cm -2 results in the formation of interstitial loops and helium gas bubbles. The helium bubbles were detectable only after annealing at a high temperature following irradiation. When the helium preinjected aluminium specimens were irradiated with 100 keV Al + ions to a dose of 84 dpa at temperatures above 150 0 C, voids were observed to form. At a lower dose of 64 dpa, only a high density of dislocation loops was observed. Al-1 wt% Cu alloy containing partially coherent theta' precipitates resists void formation to a considerable extent, and Al-10 wt% Ag alloy containing coherent G.P. zones offers complete resistance to both dislocation loop nucleation and void formation. The experimental results are discussed in the light of the current theories of irradiation induced damage in metals. The importance of the dislocation-sink efficiency for point defects, the gaseous impurity and the alloying elements in determining void formation is highlighted. (author)

Effect of solute elements in Ni alloys on blistering under He + and D + ion irradiation

Science.gov (United States)

Wakai, E.; Ezawa, T.; Takenaka, T.; Imamura, J.; Tanabe, T.; Oshima, R.

2007-08-01

Effects of solute atoms on microstructural evolution and blister formation have been investigated using Ni alloys under 25 keV He + and 20 keV D + irradiation at 500 °C to a dose of about 4 × 10 21 ions/m 2. The specimens used were pure Ni, Ni-Si, Ni-Co, Ni-Cu, Ni-Mn and Ni-Pd alloys. The volume size factors of solute elements for the Ni alloys range from -5.8% to +63.6%. The formations of blisters were observed in the helium-irradiated specimens, but not in the deuteron-irradiated specimens. The areal number densities of blisters increased with volume size difference of solute atoms. The dependence of volume size on the areal number densities of blisters was very similar to that of the number densities of bubbles on solute atoms. The size of the blisters inversely decreased with increasing size of solute atoms. The formation of blisters was intimately related to the bubble growth, and the gas pressure model for the formation of blisters was supported by this study.

Effects of Prenatal Irradiation with an Accelerated Heavy-Ion Beam on Postnatal Development in Rats

Science.gov (United States)

Wang, B.; Murakami, M.; Eguchi-Kasai, K.; Nojima, K.; Shang, Y.; Tanaka, K.; Fujita, K.; Coffigny, H.; Hayata, I.

Effects on postnatal neurophysiological development in offspring were studied following exposure of pregnant Wistar rats to accelerated neon-ion beams with a LET value of about 30 keV mu m at a dose range from 0 1 Gy to 2 0Gy on the 15th day of gestation The age at which four physiologic markers appeared and five reflexes were acquired was examined prior to weaning Gain in body weight was monitored until the offspring were 3 months old Male offspring were evaluated as young adults using two behavioral tests The effects of X-rays at 200 kVp measured for the same biological end points were studied for comparison Our previous study on carbon-ion beams with a LET value of about 13 keV mu m was also cited to elucidate a possible LET-related effect For most of the endpoints at early age significant alteration was even observed in offspring prenatally received 0 1 Gy of accelerated neon ions while neither X rays nor carbon-ions under the same dose resulted in such a significant alteration compared to that from the sham-irradiated dams All offspring whose mothers received 2 0 Gy died prior to weaning Offspring from dams irradiated with accelerated neon ions generally showed higher incidences of prenatal death and preweaning mortality markedly delayed accomplishment in their physiological markers and reflexes and gain in body weight compared to those exposed to X-rays or carbon ions at doses of 0 1 to 1 5 Gy Significantly reduced ratios of main organ weight to body weight at postnatal ages of 30 60 and 90 days were also observed

Irradiation-induced amorphization process in graphite

Energy Technology Data Exchange (ETDEWEB)

Abe, Hiroaki [Japan Atomic Energy Research Inst., Takasaki, Gunma (Japan). Takasaki Radiation Chemistry Research Establishment

1996-04-01

Effects of the element process of irradiation damage on irradiation-induced amorphization processes of graphite was studied. High orientation thermal decomposed graphite was cut about 100 nm width and used as samples. The irradiation experiments are carried out under the conditions of electronic energy of 100-400 KeV, ion energy of 200-600 KeV, ionic species Xe, Ar, Ne, C and He and the irradiation temperature at from room temperature to 900 K. The critical dose ({phi}a) increases exponentially with increasing irradiation temperature. The displacement threshold energy of graphite on c-axis direction was 27 eV and {phi}a{sup e} = 0.5 dpa. dpa is the average number of displacement to atom. The critical dose of ion irradiation ({phi}a{sup i}) was 0.2 dpa at room temperature, and amorphous graphite was produced by less than half of dose of electronic irradiation. Amorphization of graphite depending upon temperature is discussed. (S.Y.)

Influence of alloying elements on the dislocation loops created by Zr+ ion irradiation in alpha-zirconium

International Nuclear Information System (INIS)

Hellio, C.; Novion, C.H. de; Boulanger, L.

1987-01-01

Pure zirconium and four (annealed) α - zirconium based alloys (Zr-1760 ppm weight 0, Zr - 1% Nb - 430 ppm 0, Zr-1% Nb-1800 ppm 0, zircaloy 4) have been studied by transmission electron microscopy after 500 keV Zr + ion or 1 MeV electron irradiation performed at high temperature. Type of burgers vectors of the dislocation loops are given; in the case of electron irradiated Zr-1760 ppm 0, the larger loops were found of interstitial type. Alloying elements increase the loop density. The kinetic of loop growth was observed in-situ during 1 MeV electron irradiation between 400 and 700 0 C: oxygen was found to reduce considerably the growth speed of loops. In-situ annealing at 450 or 500 0 C after ion irradiation led to a large coalescence of loops in the case of pure zirconium, but modified only slightly the defect structure of the alloys

Tuning the antiferromagnetic to ferromagnetic phase transition in FeRh thin films by means of low-energy/low fluence ion irradiation

Energy Technology Data Exchange (ETDEWEB)

Heidarian, A.; Bali, R.; Grenzer, J.; Wilhelm, R.A.; Heller, R.; Yildirim, O.; Lindner, J.; Potzger, K.

2015-09-01

Ion irradiation induced modifications of the thermomagnetic properties of equiatomic FeRh thin films have been investigated. The application of 20 keV Ne{sup +} ions at different fluencies leads to broadening of the antiferromagnetic to ferromagnetic phase transition as well as a shift of the transition temperature towards lower temperatures with increasing ion fluence. Moreover, the ferromagnetic background at low temperatures generated by the ion irradiation leads to pronounced saturation magnetisation at 5 K. Complete erasure of the transition, i.e. ferromagnetic ordering through the whole temperature regime was achieved at a Ne{sup +} fluence of 3 × 10{sup 14} ions/cm{sup 2}. It does not coincide with the complete randomization of the chemical ordering of the crystal lattice.

Role of isolated and clustered DNA damage and the post-irradiating repair process in the effects of heavy ion beam irradiation

International Nuclear Information System (INIS)

Tokuyama, Yuka; Terato, Hiroaki; Furusawa, Yoshiya; Ide, Hiroshi; Yasui, Akira

2015-01-01

Clustered DNA damage is a specific type of DNA damage induced by ionizing radiation. Any type of ionizing radiation traverses the target DNA molecule as a beam, inducing damage along its track. Our previous study showed that clustered DNA damage yields decreased with increased linear energy transfer (LET), leading us to investigate the importance of clustered DNA damage in the biological effects of heavy ion beam radiation. In this study, we analyzed the yield of clustered base damage (comprising multiple base lesions) in cultured cells irradiated with various heavy ion beams, and investigated isolated base damage and the repair process in post-irradiation cultured cells. Chinese hamster ovary (CHO) cells were irradiated by carbon, silicon, argon and iron ion beams with LETs of 13, 55, 90 and 200 keV µm -1 , respectively. Agarose gel electrophoresis of the cells with enzymatic treatments indicated that clustered base damage yields decreased as the LET increased. The aldehyde reactive probe procedure showed that isolated base damage yields in the irradiated cells followed the same pattern. To analyze the cellular base damage process, clustered DNA damage repair was investigated using DNA repair mutant cells. DNA double-strand breaks accumulated in CHO mutant cells lacking Xrcc1 after irradiation, and the cell viability decreased. On the other hand, mouse embryonic fibroblast (Mef) cells lacking both Nth1 and Ogg1 became more resistant than the wild type Mef. Thus, clustered base damage seems to be involved in the expression of heavy ion beam biological effects via the repair process. (author)

Mechanical characterization of magnesium aluminate MgO·nAl2O3 spinel single crystals irradiated with Cu- ions

International Nuclear Information System (INIS)

Ohmura, Takahito; Lee, Chi-Gyu; Kishimoto, Naoki

2003-01-01

Ion-irradiation response of spinel single crystals was investigated using a nanoindentation technique. Specimens of stoichiometric (n=1) and non-stoichiometric (n=2.4) single crystals of MgO n(Al 2 O 3 ) spinel were irradiated with 60 keV Cu - ion at room temperature. Dose rate ranged from 1 to 100 μA/cm 2 , and a total dose was kept constant at 3x10 16 ions/cm 2 . Both plastic hardness and elastic modulus of all the irradiated specimens were softened. Radiation-induced swelling simultaneously occurred. Rutherford back scattering spectroscopy detected disordering of spinel crystalline structure. Accordingly, the radiation-induced softening and swelling are ascribed to accumulation of point defects associated with the disordering. In comparison between the stoichiometric and the non-stoichiometric specimens, the radiation-induced softening is suppressed in the non-stoichiometric composition. (author)

Steady State Sputtering Yields and Surface Compositions of Depleted Uranium and Uranium Carbide bombarded by 30 keV Gallium or 16 keV Cesium Ions.

Energy Technology Data Exchange (ETDEWEB)

Siekhaus, W. J. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Teslich, N. E. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Weber, P. K. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)

2014-10-23

Depleted uranium that included carbide inclusions was sputtered with 30-keV gallium ions or 16-kev cesium ions to depths much greater than the ions’ range, i.e. using steady-state sputtering. The recession of both the uranium’s and uranium carbide’s surfaces and the ion corresponding fluences were used to determine the steady-state target sputtering yields of both uranium and uranium carbide, i.e. 6.3 atoms of uranium and 2.4 units of uranium carbide eroded per gallium ion, and 9.9 uranium atoms and 3.65 units of uranium carbide eroded by cesium ions. The steady state surface composition resulting from the simultaneous gallium or cesium implantation and sputter-erosion of uranium and uranium carbide were calculated to be U₈₆Ga₁₄, (UC)₇₀Ga₃₀ and U₈₁Cs₉, (UC)₇₉Cs₂₁, respectively.

Ripple structures on surfaces and underlying crystalline layers in ion beam irradiated Si wafers

Energy Technology Data Exchange (ETDEWEB)

Grenzer, J.; Muecklich, A. [Forschungszentrum Rossendorf, Institut fuer Ionenstrahlphysik und Materialforschung, Dresden (Germany); Biermanns, A.; Grigorian, S.A.; Pietsch, U. [Institute of Physics, University of Siegen (Germany)

2009-08-15

We report on the formation of ion beam induced ripples in Si(001) wafers when bombarded with Ar+ ions at an energy of 60 keV. A set of samples varying incidence and azimuthal angles of the ion beam with respect to the crystalline surface orientation was studied by two complementary near surface sensitive techniques, namely atomic force microscopy and depth-resolved X-ray grazing incidence diffraction (GID). Additionally, cross-section TEM investigations were carried out. The ripple-like structures are formed at the sample surface as well as at the buried amorphous-crystalline interface. Best quality of the ripple pattern was found when the irradiating ion beam was aligned parallel to the (111) planes. The quality decreases rapidly if the direction of the ion beam deviates from (111). (Abstract Copyright [2009], Wiley Periodicals, Inc.)

Effect of 200 keV proton irradiation on the properties of methyl silicone rubber

International Nuclear Information System (INIS)

Zhang Lixin; Xu Zhou; Wei Qiang; He Shiyu

2006-01-01

The effects of 200 keV proton irradiation on methyl silicone rubber were studied. The changes in surface morphology, mechanical properties, cross-linking density, glass transition temperature, infrared attenuated total reflection spectrum and mass spectrum indicated that, at lower fluence, the proton irradiation induced cross-linking, resulting in an increase in tensile strength and hardness of the methyl silicone rubber. However, at higher proton fluence, radiation-induced degradation, which decreased the tensile strength and hardness, became dominant. A macromolecular-network destruction model for silicone rubber irradiated with protons was proposed

Design of a continuously operated 1-keV deuterium-ion extractor

International Nuclear Information System (INIS)

Fink, J.H.

1978-01-01

A novel grid structure that is cooled only by radiation and conduction is shown to be capable of continuously extracting 2.5 kA.m -2 of 1-keV positive deuterium ions while dissipating a power loading of 0.4 MW.m -2

Annealing of ion irradiated high TC Josephson junctions studied by numerical simulations

International Nuclear Information System (INIS)

Sirena, M.; Matzen, S.; Bergeal, N.; Lesueur, J.; Faini, G.; Bernard, R.; Briatico, J.; Crete, D. G.

2009-01-01

Recently, annealing of ion irradiated high T c Josephson iunctions (JJs) has been studied experimentally in the perspective of improving their reproducibility. Here we present numerical simulations based on random walk and Monte Carlo calculations of the evolution of JJ characteristics such as the transition temperature T c ' and its spread ΔT c ' , and compare them with experimental results on junctions irradiated with 100 and 150 keV oxygen ions, and annealed at low temperatures (below 80 deg. C). We have successfully used a vacancy-interstitial annihilation mechanism to describe the evolution of the T c ' and the homogeneity of a JJ array, analyzing the evolution of the defects density mean value and its distribution width. The annealing first increases the spread in T c ' for short annealing times due to the stochastic nature of the process, but then tends to reduce it for longer times, which is interesting for technological applications

Ion irradiation of the Murchison meteorite: Visible to mid-infrared spectroscopic results

Science.gov (United States)

Lantz, C.; Brunetto, R.; Barucci, M. A.; Dartois, E.; Duprat, J.; Engrand, C.; Godard, M.; Ledu, D.; Quirico, E.

2015-05-01

Aims: The goal of this study is to simulate space weathering processes on primitive bodies. We use ion implantation as a simulation of solar wind irradiation, which has been suggested by several authors to be the major component of space weathering on main belt asteroids. The laboratory analogs we irradiate and analyze are carbonaceous chondrites; we started the study with the Allende CV meteorite and in this companion paper we present results on the Murchison CM meteorite. Methods: We performed irradiations on pressed pellets of Murchison with 40 keV He+ and Ar+ ions using fluences up to 3 × 1016 ions/cm2. Reflectance spectra were acquired ex situ before and after irradiation in the visible to mid-infrared range (0.4-16 μm). A Raman analysis was also performed to investigate the modifications of the aromatic carbonaceous component. Results: Our results indicate that spectral variations after irradiation within the visible range are smaller than spectral variations due to sample grain size or viewing geometry of the Murchison meteorite. The aqueous alteration band profile near 3 μm changes after irradiation, as adsorbed water is removed, and phyllosilicates are affected. Raman spectroscopy highlights the insoluble organic matter (IOM) modification under irradiation. We observe a shift of the silicates band at 9.9 μm, probably due to a preferential loss of Mg (compared to Fe, the lighter Mg is more easily sputtered backward) and/or amorphization of Mg-rich materials. We compare our results to previous experiments on organic-rich materials (like asphaltite or carbonaceous chondrites), and on ordinary chondrites and olivine grains. We find that the reddening/darkening trend observed on silicate-rich surfaces is not valid for all carbonaceous chondrites, and that the spectral modifications after irradiation are a function of the initial albedo.

Synthesis of gold and silver nanoparticles by electron irradiation at 5-15 keV energy

Energy Technology Data Exchange (ETDEWEB)

Mahapatra, S K; Bogle, K A; Dhole, S D; Bhoraskar, V N [Microtron Accelerator Laboratory, Department of Physics, University of Pune, Pune-411007 (India)

2007-04-04

Thin coatings ({approx}10 {mu}m) made from a mixture of polyvinyl alcohol (PVA) and HAuCl{sub 4} or PVA and AgNO{sub 3} on quartz plates were irradiated with 5-15 keV electrons, at room temperature. The electron energy was varied from coating to coating in the range of 5-15 keV, but electron fluence was kept constant at {approx}10{sup 15} e cm{sup -2}. Samples were characterized by the UV-vis, XRD, SEM and TEM techniques. The plasmon absorption peaks at {approx}511 and {approx}442 nm confirmed the formation of gold and silver nanoparticles in the respective electron-irradiated coatings. The XRD, SEM and TEM measurements reveal that the average size of the particles could be tailored in the range of 130-50 nm for gold and from 150-40 nm for silver by varying the electron energy in the range of 5-15 keV. These particles of gold and silver embedded in the polymer could also be separated by dissolving the coatings in distilled water.

Neutral beam injector for 475 keV MARS sloshing ions

International Nuclear Information System (INIS)

Goebel, D.M.; Hamilton, G.W.

1983-01-01

A neutral beam injector system which produces 5 MW of 475 keV D 0 neutrals continuously on target has been designed. The beamline is intended to produce the sloshing ion distribution required in the end plug region of the conceptual MARS tandem mirror commercial reactor. The injector design utilizes the LBL self-extraction negative ion source and Transverse Field Focusing (TFF) accelerator to generate a long, ribbon ion beam. A laser photodetachment neutralizer strips over 90% of the negative ions. Magnetic and neutron shield designs are included to exclude the fringe fields of the end plug and provide low activation by the neutron flux from the target plasma. The use of a TFF accelerator and photodetachment neutralizer produces a total system electrical efficiency of about 63% for this design

Interface-mediated amorphization of coesite by 200 keV electron irradiation

International Nuclear Information System (INIS)

Gong, W.L.; Wang, L.M.; Ewing, R.C.; Xie, H.S.

1997-01-01

Electron-induced amorphization of coesite was studied as a function of irradiation temperature by in situ transmission electron microscopy at an incident energy of 200 keV. Electron-induced amorphization of coesite is induced by an ionization mechanism and is mainly dominated by an interface-mediated, heterogeneous nucleation-and-growth controlled process. Amorphous domains nucleate at surfaces, crystalline-amorphous (c-a) interfaces, and grain boundaries. This is the same process as the interface-mediated vitrification of coesite by isothermal annealing above the thermodynamic melting temperature (875 K), but below the glass transition temperature (1480 K). The interface-mediated amorphization of coesite by electron irradiation is morphologically similar to interface-mediated thermodynamic melting. copyright 1997 American Institute of Physics

Ion irradiation effect of alumina and its luminescence

Energy Technology Data Exchange (ETDEWEB)

Aoki, Yasushi; Yamamoto, Shunya; Naramoto, Hiroshi [Japan Atomic Energy Research Inst., Takasaki, Gunma (Japan). Takasaki Radiation Chemistry Research Establishment; My, N T

1997-03-01

The luminescence spectra of single crystalline alpha-alumina and ruby which has 0.02% of Cr{sub 2}O{sub 3} as a impurity, induced by 200 keV He{sup +} and Ar{sup +} irradiation were measured at room temperature as a function of irradiation dose. The analysis of the measured spectra showed the existence of three main luminescence features in the wavelength region of 250 to 350 nm, namely anionic color centers, F-center at 411 nm and F{sup +}-center at 330 nm and a band observed around 315 nm. As alpha-alumina was irradiated with He{sup +}, F-center and F{sup +}-center luminescence grew and decayed, but the behaviors of those were different from each other. It seems that a concentration quenching occurred on the F-center luminescence in the dose range above 1x10{sup 14} He/cm{sup 2}. Furthermore, F-center luminescence was strongly suppressed in ruby, compared with that in alumina. On the other hand, the luminescence band around 315 nm appeared only in the early stage of irradiation and did not show its growth part. The dose dependent behavior was similar to that of Cr{sup 3+} emission at 695 nm (R-line) in ruby in both cases of He{sup +} and Ar{sup +} irradiation. Based on the experimental results mentioned above, the processes of defect formation and excitation in alumina in the early stage of ion irradiation will be discussed. (author)

Concurrent irradiation effects with ionization and displacement on the formation of defect clusters in magnesium aluminate spinel

Energy Technology Data Exchange (ETDEWEB)

Yasuda, Kazuhiro; Morisaki, Rieko; Kinoshita, Chiken [Kyushu Univ., Fukuoka (Japan). Faculty of Engineering; Abe, Hiroaki; Naramoto, Hiroshi

1997-03-01

Single crystals of MgAl{sub 2}O{sub 4} were irradiated concurrently with a homogeneous ion beam and a focused electron beam in TEM-accelerator facilities to get insight into the concurrent irradiation effects with ionization and displacements. Various kinds of 30 or 300 keV ions (He{sup +}, O{sup +}, Mg{sup +}, Ar{sup +} and Xe{sup +}) and 200 keV or 1 MeV electrons were used to provide a wide range of nuclear (S{sub n}) and ionizing (S{sub e}) stopping powers. Dislocation loops were formed both inside and outside the electron beam at 870 K under concurrent irradiation with 30 keV ions (He{sup +}, Ar{sup +} and Xe{sup +}) and 1 MeV electrons. In the case of irradiation with 300 keV ions and 200 keV electrons, on the other hand, a preferential formation of voids or bubbles and a suppressive formation of dislocation loops were observed inside the electron beam. On the basis of these results, we pointed out the importance of the nuclear stopping power which causes the diffusion of cations toward the outside of the focused electron beam. (author)

ion irradiation

Indian Academy of Sciences (India)

Swift heavy ions interact predominantly through inelastic scattering while traversing any polymer medium and produce excited/ionized atoms. Here samples of the polycarbonate Makrofol of approximate thickness 20 m, spin coated on GaAs substrate were irradiated with 50 MeV Li ion (+3 charge state). Build-in ...

Ion bombardment induced damage in silicon carbide studied by ion beam analytical methods

Energy Technology Data Exchange (ETDEWEB)

Szilagyi, E.; Kotai, E. [Magyar Tudomanyos Akademia, Budapest (HU). Research Inst. for Particle and Nuclear Physics (RIPNP); Khanh, N.Q.; Horvath, Z.E.; Lohner, T.; Battistig, G.; Zolnai, Z.; Gyulai, J. [Research Inst. for Technical Physics and Materials Science, Budapest (Hungary)

2001-07-01

Damage created by implantation of Al{sup +} ions into 4H-SiC is characterized using backscattering spectrometry in combination with channeling. The measurability of the damage profile in the carbon sublattice was demonstrated using the 4260 keV {sup 12}C({alpha},{alpha}){sup 12}C resonance. To create disorder, Al{sup +} ions with energy of 200 keV and 350 keV were implanted at room temperature. As an independent method, cross-sectional transmission electron microscopy was used to study the damage structure in irradiated 4H-SiC. (orig.)

Modifications of gallium phosphide single crystals using slow highly charged ions and swift heavy ions

Energy Technology Data Exchange (ETDEWEB)

El-Said, A.S., E-mail: elsaid@kfupm.edu.sa [Physics Department, King Fahd University of Petroleum and Minerals, Dhahran 31261 (Saudi Arabia); Wilhelm, R.A.; Heller, R.; Akhmadaliev, Sh.; Schumann, E. [Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, 01328 Dresden (Germany); Sorokin, M. [National Research Centre ’Kurchatov Institute’, Kurchatov Square 1, 123182 Moscow (Russian Federation); Facsko, S. [Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, 01328 Dresden (Germany); Trautmann, C. [GSI Helmholtz Centre for Heavy Ion Research, 64291 Darmstadt (Germany); Technische Universität Darmstadt, 64289 Darmstadt (Germany)

2016-09-01

GaP single crystals were irradiated with slow highly charged ions (HCI) using 114 keV {sup 129}Xe{sup (33–40)+} and with various swift heavy ions (SHI) of 30 MeV I{sup 9+} and 374 MeV–2.2 GeV {sup 197}Au{sup 25+}. The irradiated surfaces were investigated by scanning force microscopy (SFM). The irradiations with SHI lead to nanohillocks protruding from the GaP surfaces, whereas no changes of the surface topography were observed after the irradiation with HCI. This result indicates that a potential energy above 38.5 keV is required for surface nanostructuring of GaP. In addition, strong coloration of the GaP crystals was observed after irradiation with SHI. The effect was stronger for higher energies. This was confirmed by measuring an increased extinction coefficient in the visible light region.

Development of a keV single-ion-implanter for nanofabrication

International Nuclear Information System (INIS)

Yang, C.; Jamieson, D.N.; Hopf, T.; Tamanyan, G.; Spizziri, P.; Pakes, C.; Andresen, S.E.; Hudson, F.; Gauja, E.; Dzurak, A.; Clark, R.G.

2005-01-01

Traditional methods of doping semiconductors have a difficulty meeting the demand for high precision doping due to large statistical fluctuations in the numbers of dopant atoms introduced in the ever shrinking volume in micro- and nano-electronics devices, especially when the fabrication process approaches the nanometre scale. The statistical fluctuations in doping semiconductors for the fabrication of devices with a very small feature size may lead to inconsistent and unreliable performance. This paper describes the adaptation of a commercial ion implanter into a single-ion-implantation system for the accurate delivery of dopants into a nanometre or micrometre area in a silicon substrate. All the implanted ions can be accurately counted with near 100% certainty through online detection using the silicon substrate itself as an ion detector. A variety of ion species including B + , N + , P + at the energy range of 10-15 keV can be delivered in the single ion implantation system. (author). 6 refs., 6 figs

Tunable electronic, electrical and optical properties of graphene oxide sheets by ion irradiation

Science.gov (United States)

Jayalakshmi, G.; Saravanan, K.; Panigrahi, B. K.; Sundaravel, B.; Gupta, Mukul

2018-05-01

The tunable electronic, electrical and optical properties of graphene oxide (GO) sheets were investigated using a controlled reduction by 500 keV Ar+-ion irradiation. The carbon to oxygen ratio of the GO sheets upon the ion beam reduction has been estimated using resonant Rutherford backscattering spectrometry analyses and its effect on the electrical and optical properties of GO sheets has been studied using sheet resistance measurements and photoluminescence (PL) measurements. The restoration of sp 2-hybridized carbon atoms within the sp 3 matrix is found to be increases with increasing the Ar+-ion fluences as evident from Fourier transform infrared, and x-ray absorption near-edge structure measurements. The decrease in the number of disorder-induced local density of states (LDOSs) within the π-π* gap upon the reduction causes the shifting of PL emission from near infra-red to blue region and decreases the sheet resistance. The improved electrical and optical properties of GO sheets were correlated to the decrease in the number of LDOSs within the π-π* gap. Our experimental investigations suggest ion beam irradiation is one of an effective approaches to reduce GO to RGO and to tailor its electronic, electrical and optical properties.

Iron ion implantation into C60 layer

International Nuclear Information System (INIS)

Racz, R.; Biri, S.; Csik, A.; Vad, K.

2011-01-01

Complete text of publication follows. The soccer ball shaped carbon molecule consisting of 60 carbon atoms (C 60 , fullerene) was discovered in 1985. Since that time the fullerene has become intensively studied. This special molecule has much potential in medical care, biotechnology and nanotechnology. We are motivated to produce special type fullerenes, so called endohedral fullerenes (some alien atoms are encapsulated inside the fullerene cage). The spring of our motivation is that the Fe at C 60 could be applied as a contrast material for MRI (Magnetic Resonance Imaging) or microwave heat therapy. One way to make X at C 60 is the surface production using an ECRIS (Electron Cyclotron Resonance Ion Source). An evaporated or preprepared fullerene layer is irradiated by ions to form a new material during the implantation. By this method several kinds of atomic species, such as Li, Na, K, Rb, Xe were encapsulated into the fullerenes. However evidence for the Fe at C 60 has not been found yet. During the analysis of the irradiated samples three questions must be answered. 1. Are there iron atoms in the layer and where? 2. Does the iron bond to the fullerene? 3. How does the iron bond to the fullerene, inside or outside? Using different investigation tools, SNMS (Secondary Neural Mass Spectrometer), MALDI-TOF (Matrix Assisted Laser Desorption Ionization Time of Flight), XPS (Xray Photoelectron Spectroscopy) or HPLC (High-Performance Liquid Chromatography), all these questions could be clarified step by step. In this paper we made the first steps to answer the first question: fullerene layers irradiated by iron ion beam delivered by the ATOMKI-ECRIS have been analyzed by the ATOMKI-SNMS. The evaporated 90 - 120 nm thick fullerene layers on Si holder were irradiated by Fe 5+ and Fe + ion beams produced from Ferrocene vapor. Samples were irradiated with two different doses (5 10 18 ion/cm 3 and 10 22 ion/cm 3 ) at four ion energies (65 keV, 6.5 keV, 0.2 keV and two of

A cryogenic electrostatic trap for long-time storage of keV ion beams.

Science.gov (United States)

Lange, M; Froese, M; Menk, S; Varju, J; Bastert, R; Blaum, K; López-Urrutia, J R Crespo; Fellenberger, F; Grieser, M; von Hahn, R; Heber, O; Kühnel, K-U; Laux, F; Orlov, D A; Rappaport, M L; Repnow, R; Schröter, C D; Schwalm, D; Shornikov, A; Sieber, T; Toker, Y; Ullrich, J; Wolf, A; Zajfman, D

2010-05-01

We report on the realization and operation of a fast ion beam trap of the linear electrostatic type employing liquid helium cooling to reach extremely low blackbody radiation temperature and residual gas density and, hence, long storage times of more than 5 min which are unprecedented for keV ion beams. Inside a beam pipe that can be cooled to temperatures <15 K, with 1.8 K reached in some locations, an ion beam pulse can be stored at kinetic energies of 2-20 keV between two electrostatic mirrors. Along with an overview of the cryogenic trap design, we present a measurement of the residual gas density inside the trap resulting in only 2 x 10(3) cm(-3), which for a room temperature environment corresponds to a pressure in the 10(-14) mbar range. The device, called the cryogenic trap for fast ion beams, is now being used to investigate molecules and clusters at low temperatures, but has also served as a design prototype for the cryogenic heavy-ion storage ring currently under construction at the Max-Planck Institute for Nuclear Physics.

A study on irradiation damage of solid 5'-dTMP implanted by low energy N+ ion beam

International Nuclear Information System (INIS)

Shao Chunlin; Yu Zengliang

1995-01-01

The yields of inorganic phosphate and base released from 5'-dTMP irradiated by 30 keV N + ion beam were investigated. The fluence effects of these yields and the influence with 0.1 mol/L NaOH treatment on them were presented. It was shown that the alkali treatment would not only increase the yield of inorganic phosphate, but also damage and then split base released from the irradiated 5'-dTMP. When the irradiated samples were treated with 0.1 mol/L NaOH immediately, the yield of inorganic phosphate was increased by a factor of 1.7 and the concentration of base decreased to half of that in the sample's water solution. Furthermore, the yield of inorganic phosphate would increase by a factor of 2.8 after 40 min of alkali treatment. Irradiation effects of ion beam were mainly direct ones and had a higher value of G(P i ), greater than 0.44 molecule/100 eV

Preparation and Characterization of Ion-Irradiated Nanodiamonds as Photoacoustic Contrast Agents.

Science.gov (United States)

Fang, Chia-Yi; Chang, Cheng-Chun; Mou, Chung-Yuan; Chang, Huan-Cheng

2015-02-01

Highly radiation-damaged or irradiated nanodiamonds (INDs) are a new type of nanomaterial developed recently as a potential photoacoustic (PA) contrast agent for deep-tissue imaging. This work characterized in detail the photophysical properties of these materials prepared by ion irradiation of natural diamond powders using various spectroscopic methods. For 40-nm NDs irradiated with 40-keV He+ at a dose of 3 x 10(15) ions/cm2, an average molar extinction coefficient of 4.2 M-1 cm-1 per carbon atom was measured at 1064 nm. Compared with gold nanorods of similar dimensions (10 nm x 67 nm), the INDs have a substantially smaller (by > 4 orders of magnitude) molar extinction coefficient per particle. However, the deficit is readily compensated by the much higher thermal stability, stronger hydrophilic interaction with water, and a lower nanobubble formation threshold (~30 mJ/cm2) of the sp3-carbon-based nanomaterial. No sign of photodamage was detected after high-energy (>100 mJ/cm2) illumination of the INDs for hours. Cell viability assays at the IND concentration of up to 100 µg/mL showed that the nanomaterial is non-cytotoxic and potentially useful for long-term PA bioimaging applications.

Erosion of volatile elemental condensed gases by keV electron and light-ion bombardment

International Nuclear Information System (INIS)

Schou, J.

1991-11-01

Erosion of the most volatile elemental gases by keV electron and light-ion bombardment has been studied at the experimental setup at Risoe. The present work includes frozen neon, argon, krypton, nitrogen, oxygen and three hydrogen isotopes, deuterium, hydrogen deuteride and hydrogen. The yield of these condensed gases has been measured as a function of film thickness and primary energy for almost all combinations of primary particles (1-3 keV electrons, 5-10 keV hydrogen- and helium ions) and ices. These and other existing results show that there are substantial common features for the sputtering of frozen elemental gases. Within the two groups, the solid rare gases and the solid molecular gases, the similarity is striking. The hydrogenic solids deviate in some respects from the other elements. The processes that liberate kinetic energy for the particle ejection in sputtering are characteristic of the specific gas. (au) 3 tabs., 12 ills., 159 refs

Studies on keV and eV electrons in solids

International Nuclear Information System (INIS)

Schou, J.

1979-10-01

The interaction between keV or eV electrons and solids was studied. The results presented mostly concern problems in connection with electron irradiation of solids, but to some extent they also include ion-induced secondary electron emission. The experiments were mainly performed on solidified gases using 1 - 3 keV electrons. The projected range of electrons was determined in solid hydrogen, deuterium and nitrogen. The true secondary electron emission coefficient and the electron reflection coefficient of solid hydrogen, deuterium and nitrogen were measured. The escape depth of the true secondary electrons in nitrogen was determined. The angular dependence of both the reflection coefficient and the true secondary electron emission coefficient of solid hydrogen and deuterium was investigated. Both ion- and electron-induced secondary electron emission were treated theoretically on the basis of ionization cascade theory. (Auth.)

Effects of keV electron irradiation on the avalanche-electron generation rates of three donors on oxidized silicon

International Nuclear Information System (INIS)

Sah, C.; Sun, J.Y.; Tzou, J.J.

1983-01-01

After keV electron beam irradiation of oxidized silicon, the avalanche-electron-injection generation rates and densities of the bulk compensating donor, the interface states, and the turnaround trap all increase. Heating at 200 0 C can anneal out these three donor-like traps, however, it cannot restore the generation rates back to their original and lower pre-keV electron irradiation values. The experimental results also indicate that all three traps may be related to the same mobile impurity species whose bonds are loosened by the keV electrons and then broken or released by the avalanche injected electrons

Effect of 14N ion irradiation on Bi2Sr2CaCu2Oy superconductors

International Nuclear Information System (INIS)

Sharma, M.L.; Ashwini Kumar, P.K.; Sarkar, S.K.; Virdi, G.S.; Rup, R.

1993-01-01

The effect of 14 N ion irradiation on a bulk Bi 2 Sr 2 CaCu 2 O y high-T c superconducting system has been studied. The incident energy was kept at 150 keV and the irradiation dose varied between 1 x 10 11 cm -2 and 1 x 10 16 cm -2 . It has been observed that the resistive transition occurs at lower temperatures for the irradiated specimens and the width (10-90% transition) of the superconducting transition decreases. Scanning transmission electron microscopy and x-ray diffraction (XRD) studies were carried out to evaluate the change in surface microstructure and XRD peak intensities due to irradiation. The results are discussed in the light of the similarity of atomic sizes of N and O atoms. (author)

Effects of uranium bombardment by 20-40 KeV argon ions, Annex 2

International Nuclear Information System (INIS)

Nenadovic, T.; Jurela, Z.

1966-01-01

This paper shows the results of argon ions interaction with the polycrystal natural uranium. Thin foil of uranium about 200 μ was bombarded by 20-40 KeV argon ions. Coefficients of cathode scattering δ and secondary electrons emission γ were measured, during the process A + →U. The foil was then studied by transmission method and method of single step replica using an electron microscope [sr

Ion trajectories of the MFTF unshielded 80-keV neutral-beam sources

International Nuclear Information System (INIS)

Ling, R.C.; Bulmer, R.H.; Cutler, T.A.; Foote, J.H.; Horvath, J.A.

1978-01-01

The trajectories of ions from the Magnetic Fusion Test Facility (MFTF) 80-keV neutral-beam sources are calculated to obtain a preliminary understanding of the ion-beam paths and the magnitude of the power densities. This information will be needed for locating and designing thermal (kinetic-energy) absorbers for the ions. The calculations are made by employing a number of previously written computer codes. The TIBRO code is used to calculate the trajectories of the ions in the fringe magnetic field of the MFTF machine, which can operate with a center-field intensity of up to 2 T. The SAMPP code gives three-dimensional views of the ion beams for better visualization of the ion-beam paths. Also used are the codes MIG, XPICK, and MERGE, which were all previously written for manipulating data

Energetic Ion and Electron Irradiation of the Icy Galilean Satellites

Science.gov (United States)

Cooper, John F.; Johnson, Robert E.; Mauk, Barry H.; Garrett, Henry B.; Gehrels, Neil

2001-01-01

Galileo Orbiter measurements of energetic ions (20 keV to 100 MeV) and electrons (20-700 keV) in Jupiter's magnetosphere are used, in conjunction with the JPL electron model (less than 40 MeV), to compute irradiation effects in the surface layers of Europa, Ganymede, and Callisto. Significant elemental modifications are produced on unshielded surfaces to approximately centimeter depths in times of less than or equal to 10(exp 6) years, whereas micrometer depths on Europa are fully processed in approximately 10 years. Most observations of surface composition are limited to optical depths of approximately 1 mm, which are indirect contact with the space environment. Incident flux modeling includes Stormer deflection by the Ganymede dipole magnetic field, likely variable over that satellite's irradiation history. Delivered energy flux of approximately 8 x 10(exp 10) keV/square cm-s at Europa is comparable to total internal heat flux in the same units from tidal and radiogenic sources, while exceeding that for solar UV energies (greater than 6 eV) relevant to ice chemistry. Particle energy fluxes to Ganymede's equator and Callisto are similar at approximately 2-3 x 10(exp 8) keV/square cm-s with 5 x 10(exp 9) at Ganymede's polar cap, the latter being comparable to radiogenic energy input. Rates of change in optical reflectance and molecular composition on Europa, and on Ganymede's polar cap, are strongly driven by energy from irradiation, even in relatively young regions. Irradiation of nonice materials can produce SO2 and CO2, detected on Callisto and Europa, and simple to complex hydrocarbons. Iogenic neutral atoms and meteoroids deliver negligible energy approximately 10(exp 4-5) keV/square cm-s but impacts of the latter are important for burial or removal of irradiation products. Downward transport of radiation produced oxidants and hydrocarbons could deliver significant chemical energy into the satellite interiors for astrobiological evolution in putative sub

Direct observation of cascade defect formation at low temperatures in ion-irradiated metals

International Nuclear Information System (INIS)

Muroga, T.; Hirooka, K.; Ishino, S.

1984-01-01

Direct transmission electron microscopy observations of cascade defect formation have been carried out in gold, Type 316 stainless steel, and aluminum irradiated by Al + , Ar - , and Xe + ions with energies between 80 and 400 keV. By utilizing a link of an ion accelerator to an electron microscope, in situ observations at low temperature (-150 0 C) have become possible. In gold, subcascade structures are clearly observed in all cases. Obvious dependence on projectile mass and energy is observed for cascade structure and vacancy clustering efficiency in gold and for defect visibility in aluminum and Type 316 stainless steel. A computer simulation calculation using MARLOWE shows subcascade distributions a little smaller in size and larger in number than the present observation

Comparison of the Raman spectra of ion irradiated soot and collected extraterrestrial carbon

Science.gov (United States)

Brunetto, R.; Pino, T.; Dartois, E.; Cao, A.-T.; d'Hendecourt, L.; Strazzulla, G.; Bréchignac, Ph.

2009-03-01

We use a low pressure flame to produce soot by-products as possible analogues of the carbonaceous dust present in diverse astrophysical environments, such as circumstellar shells, diffuse interstellar medium, planetary disks, as well as in our own Solar System. Several soot samples, displaying an initial chemical diversity from aromatic to aliphatic dominated material, are irradiated with 200-400 keV H +, He +, and Ar ++ ions, with fluences comprised between 10 14 and 10 16 ions/cm 2, to simulate expected radiation induced modification on extraterrestrial carbon. The evolution of the samples is monitored using Raman spectroscopy, before, during, and after irradiation. A detailed analysis of the first- and second-order Raman spectra is performed, using a fitting combination of Lorentzian and/or Gaussian-shaped bands. Upon irradiation, the samples evolve toward an amorphous carbon phase. The results suggest that the observed variations are more related to vacancy formation than ionization processes. A comparison with Raman spectra of extraterrestrial organic matter and other irradiation experiments of astrophysically relevant carbonaceous materials is presented. The results are consistent with previous experiments showing mostly amorphization of various carbonaceous materials. Irradiated soots have Raman spectra similar to those of some meteorites, IDPs, and Comet Wild 2 grains collected by the Stardust mission. Since the early-Sun expected irradiation fluxes sufficient for amorphization are compatible with accretion timescales, our results support the idea that insoluble organic matter (IOM) observed in primitive meteorites has experienced irradiation-induced amorphization prior to the accretion of the parent bodies, emphasizing the important role played by early solar nebula processing.

Damage of niobium surfaces caused by bombardment with 4He+ ions of different energies typical for T-20

International Nuclear Information System (INIS)

Guseva, M.I.; Gusev, V.; Martynenko, Yu.V.; Das, S.K.; Kaminsky, M.

1979-01-01

The aim of the present studies was to study surface damage due to blistering of both annealed and cold-worked niobium (a candidate first wall material for keV) irradiated sequentially with 4 He + ions with energies of 0.5 to 1800 keV for a total dose of 5.0 C/cm 2 . A typical surface of cold-worked Nb after irradiations with 4 He + ions with increasing energy from 0.5 to 90 keV is shown. The blister diameters range from 0.1 μm to 3 μm, and most of the blisters have exfoliated. The blisters fall into several size classes, the two most dominant ones having most probable blister diameters of approx. 0.27 μm and approx. 2.0 μm. The skin thickness of the larger blisters was measured to be approx. 0.23 μm. Also shown is the same area after irradiation with 150-1800-keV 4 He + irradiation for a dose of 0.66 C/cm 2 . A few additional blisters can be seen. A cold-worked Nb surface that was irradiated only with 150-1800-keV 4 He + ions is also shown. It is seen that prior irradiation with 0.5-90-keV 4 He + helped in significantly reducing blistering. For a total dose of 0.5 C/cm 2 , the erosion yield due to helium blistering of Nb ranges from (5.4 +- 2.0) x 10 -3 to (1.5 +- 0.7) x 10 -2 atoms/ion. For the cold-worked Nb target the results indicate clearly that the 4 He + implantations for the energy range from 0.5 to 90 keV help to reduce both the density and diameter of blisters formed by subsequent He-implantation for the energy ranging from 150 to 1800 keV. 2 figures

A Preliminary Study of the Application of a Model Animal-Caenorhabidity elegans' Exposure to a Low-Energy Ion Irradiation System

International Nuclear Information System (INIS)

Liu Xuelan; Cai Kezhou; Feng Huiyun; Xu An; Yuan Hang; Yu Zengliang

2007-01-01

Because of the lack of suitable animal models adapted to high vacuum stress in the low-energy ion implantation system, the bio-effects ion irradiation with an energy less than 50 keV on multi-cellular animal individuals have never been investigated so far. The nematode Caenorhabditis elegans has proved to be an excellent animal model used for the study of a broad spectrum of biological issues. The purpose of this work was to investigate the viability of this animal under ion irradiation. We studied the protection effects of glycerol and trehalose on the enhancement of nematodes' ability to bear the vacuum stress. The results showed that the survival of the nematodes was enhanced remarkably under long and slow desiccation, even without glycerol and trehalose. 15% glycerol showed a better anti-vacuum stress effect on the nematodes than trehalose did under short-time desiccation. Low-temperature pre-treatment or post-treatment of the samples had no obvious effect on the survival scored after argon ion irradiation. Moreover, little effect was induced by 15% glycerol- and vacuum-exposure on germ cell apoptosis, compared to the untreated control sample. It issuggested that such treatment would provide relatively low background for genotoxic evaluations with ion irradiation

Mutation induced with ion beam irradiation in rose

Energy Technology Data Exchange (ETDEWEB)

Yamaguchi, H. E-mail: yhiroya@nias.affrc.go.jp; Nagatomi, S.; Morishita, T.; Degi, K.; Tanaka, A.; Shikazono, N.; Hase, Y

2003-05-01

The effects of mutation induction by ion beam irradiation on axillary buds in rose were investigated. Axillary buds were irradiated with carbon and helium ion beams, and the solid mutants emerged after irradiation by repeated cutting back. In helium ion irradiation, mutations were observed in plants derived from 9 buds among 56 irradiated buds in 'Orange Rosamini' and in plants derived from 10 buds among 61 irradiated buds in 'Red Minimo'. In carbon ion, mutations were observed in plants derived from 12 buds among 88 irradiated buds in 'Orange Rosamini'. Mutations were induced not only in higher doses but also in lower doses, with which physiological effect by irradiation was hardly observed. Irradiation with both ion beams induced mutants in the number of petals, in flower size, in flower shape and in flower color in each cultivar.

Microstructure of RERTR DU-alloys irradiated with krypton ions up to 100 dpa

Science.gov (United States)

Gan, J.; Keiser, D. D., Jr.; Miller, B. D.; Wachs, D. M.; Allen, T. R.; Kirk, M.; Rest, J.

2011-04-01

The radiation stability of the interaction product formed at the fuel-matrix interface of research reactor dispersion fuels, under fission-product bombardment, has a strong impact on fuel performance. Three depleted uranium alloys were cast that consisted of the following five phases to be investigated: U(Si, Al) 3, (U, Mo)(Si, Al) 3, UMo 2Al 20, U 6Mo 4Al 43, and UAl 4. Irradiation of transmission electron microscopy (TEM) disc samples with 500-keV Kr ions at 200 °C to doses up to ˜100 displacements per atom (dpa) were conducted using a 300-keV electron microscope equipped with an ion accelerator. TEM results show that the U(Si, Al) 3 and UAl 4 phases remain crystalline at 100 dpa without forming voids. The (U, Mo)(Si, Al) 3 and UMo 2Al 20 phases become amorphous at 1 and ˜2 dpa, respectively, and show no evidence of voids at 100 dpa. The U 6Mo 4Al 43 phase goes to amorphous at less than 1 dpa and reveals high density voids at 100 dpa.

Heavy ion irradiations on synthetic hollandite-type materials: Ba{sub 1.0}Cs{sub 0.3}A{sub 2.3}Ti{sub 5.7}O{sub 16} (A=Cr, Fe, Al)

Energy Technology Data Exchange (ETDEWEB)

Tang, Ming, E-mail: mtang@lanl.gov [Materials Science & Technology Division, Los Alamos National Laboratory, Los Alamos, NM 87545 (United States); Tumurugoti, Priyatham; Clark, Braeden; Sundaram, S.K. [Kazuo Inamori School of Engineering, The New York State College of Ceramics, Alfred University, Alfred, NY 14802 (United States); Amoroso, Jake; Marra, James [Materials Science & Technology Directorate, Savannah River National Laboratory, Aiken, SC 29808 (United States); Sun, Cheng [Materials Science & Technology Division, Los Alamos National Laboratory, Los Alamos, NM 87545 (United States); Lu, Ping [Sandia National Laboratories, Albuquerque, NM 87185 (United States); Wang, Yongqiang [Materials Science & Technology Division, Los Alamos National Laboratory, Los Alamos, NM 87545 (United States); Jiang, Ying-Bing [TEM Laboratory, University of New Mexico, Albuquerque, NM 87131 (United States)

2016-07-15

The hollandite supergroup of minerals has received considerable attention as a nuclear waste form for immobilization of Cs. The radiation stability of synthetic hollandite-type compounds described generally as Ba{sub 1.0}Cs{sub 0.3}A{sub 2.3}Ti{sub 5.7}O{sub 16} (A=Cr, Fe, Al) were evaluated by heavy ion (Kr) irradiations on polycrystalline single phase materials and multiphase materials incorporating the hollandite phases. Ion irradiation damage effects on these samples were examined using grazing incidence X-ray diffraction (GIXRD) and transmission electron microscopy (TEM). Single phase compounds possess tetragonal structure with space group I4/m. GIXRD and TEM observations revealed that 600 keV Kr irradiation-induced amorphization on single phase hollandites compounds occurred at a fluence between 2.5×10{sup 14} Kr/cm{sup 2} and 5×10{sup 14} Kr/cm{sup 2}. The critical amorphization fluence of single phase hollandite compounds obtained by in situ 1 MeV Kr ion irradiation was around 3.25×10{sup 14} Kr/cm{sup 2}. The hollandite phase exhibited similar amorphization susceptibility under Kr ion irradiation when incorporated into a multiphase system. - Graphical abstract: 600 keV Kr irradiation-induced amorphization on single phase hollandites compounds occurred at a fluence between 2.5×10{sup 14} Kr/cm{sup 2} and 5×10{sup 14} Kr/cm{sup 2}. The hollandite phase exhibited similar amorphization susceptibility under Kr ion irradiation when incorporated into a multiphase system. This is also the first time that the critical amorphization fluence of single phase hollandite compounds were determined at a fluence of around 3.25×10{sup 14} Kr/cm{sup 2} by in situ 1 MeV Kr ion irradiation. Display Omitted.

Elaboration by ion implantation of cobalt nano-particles in silica layers and modifications of their properties by electron and swift heavy ion irradiations

International Nuclear Information System (INIS)

D'Orleans, C.

2003-07-01

This work aims to investigate the capability of ion irradiations to elaborate magnetic nano-particles in silica layers, and to modify their properties. Co + ions have been implanted at 160 keV at fluences of 2.10 16 , 5.10 16 and 10 17 at/cm 2 , and at temperatures of 77, 295 and 873 K. The dependence of the particle size on the implantation fluence, and more significantly on the implantation temperature has been shown. TEM (transmission electronic microscopy) observations have shown a mean diameter varying from 1 nm for implantations at 2.10 16 Co + /cm 2 at 77 K, to 9.7 nm at 10 17 Co + /cm 2 at 873 K. For high temperature implantations, two regions of particles appear. Simulations based on a kinetic 3-dimensional lattice Monte Carlo method reproduce quantitatively the features observed for implantations. Thermal treatments induce the ripening of the particles. Electron irradiations at 873 K induce an important increase in mean particle sizes. Swift heavy ion irradiations also induce the ripening of the particles for low fluences, and an elongation of the particles in the incident beam direction for high fluences, resulting in a magnetic anisotropy. Mechanisms invoked in thermal spike model could also explain this anisotropic growth. (author)

Reflectance spectroscopy of PMMA implanted with 50 keV silicon ions

Energy Technology Data Exchange (ETDEWEB)

Florian, Bojana [Bulgarian Institute of Metrology, 2 Prof. P. Mutafchiev Str., 1797 Sofia (Bulgaria); Stefanov, Ivan [Department of Quantum Electronics, Faculty of Physics, Sofia University, 5 James Bourchier Blvd., 1164 Sofia (Bulgaria); Hadjichristov, Georgi [Institute of Solid State Physics, 72 Tzarigradsko Chaussee Blvd., 1784 Sofia (Bulgaria)

2009-07-01

Recently, the modification of the specular reflectivity of PMMA implanted with low-energy (50 keV) silicon ions was studied and nano-clusters formed in PMMA by Si{sup +} implantation were evidenced by Raman spectroscopy and electrical measurements. Further, the optical loss due to off-specular (diffuse) reflectivity of this ion-implanted polymer is also of practical interest for applications such as micro-optical lenses, diffraction gratings, Fresnel lenses, waveguides, etc. We examined both specular and diffuse reflectivity of Si{sup +} implanted PMMA in the UV-Vis-NIR. The effect from Si{sup +} implantation in the dose range 10{sup 14}-10{sup 17} ions/cm{sup 2} is linked to the structure formed in PMMA where the buried ion-implanted layer has a thickness up to 100 nm. As compared to the pristine PMMA, an enhancement of the reflectivity of Si{sup +} implanted PMMA is observed, that is attributed to the modification of the subsurface region of PMMA upon the ion implantation.

Fragmentation of anthracene induced by collisions with 40 keV Ar8+ ions

International Nuclear Information System (INIS)

Brédy, R; Ortéga, C; Ji, M; Bernard, J; Chen, L; Montagne, G; Martin, S

2013-01-01

We report on the fragmentation of anthracene molecular ions C 14 H 10 r+ as a function of the parent ion initial charge r (= 1–4). Neutral anthracene molecules in the gas phase were ionized and excited in collisions with Ar 8+ ions at 40 keV and the mass-to-charge spectra of the parent ions C 14 H 10 r+ (1 ⩽ r ⩽ 4) were obtained. Stable molecular ions C 14 H 10 r+ (1 ⩽ r ⩽ 3) are observed. Branching ratios for the competitive evaporation (loss of neutral fragments) and fragmentation (charge separation) processes were measured for C 14 H 10 2+ parent ions. For C 14 H 10 3+ parent ions, the results indicate that fragmentation is the only dominant process and quasi-symmetric fission is observed. (paper)

Development and characterization of semiconductor ion detectors for plasma diagnostics in the range over 0.3 keV

Science.gov (United States)

Cho, T.; Sakamoto, Y.; Hirata, M.; Kohagura, J.; Makino, K.; Kanke, S.; Takahashi, K.; Okamura, T.; Nakashima, Y.; Yatsu, K.; Tamano, T.; Miyoshi, S.

1997-01-01

For the purpose of plasma-ion-energy analyses in a wide-energy range from a few hundred eV to hundreds of keV, upgraded semiconductor detectors are newly fabricated and characterized using a test-ion-beam line from 0.3 to 12 keV. In particular, the detectable lowest-ion energy is drastically improved at least down to 0.3 keV; this energy is one to two orders-of-magnitude better than those for commercially available Si-surface-barrier diodes employed for previous plasma-ion diagnostics. A signal-to-noise ratio of two to three orders-of-magnitude better than that for usual metal-collector detectors is demonstrated for the compact-sized semiconductor along with the availability of the use under conditions of a good vacuum and a strong-magnetic field. Such characteristics are achieved due to the improving methods of the optimization of the thicknesses of a Si dead layer and a SiO2 layer, as well as the nitrogen-doping technique near the depletion layer along with minimizing impurity concentrations in Si. Such an upgraded capability of an extremely low-energy-ion detection with the low-noise characteristics enlarges research regimes of plasma-ion behavior using semiconductor detectors not only in the divertor regions of tokamaks but in wider spectra of open-field plasma devices including tandem mirrors. An application of the semiconductor ion detector for plasma-ion diagnostics is demonstrated in a specially designed ion-spectrometer structure.

Positive ion irradiation facility

International Nuclear Information System (INIS)

Braby, L.A.

1985-01-01

Many questions about the mechanisms of the response of cells to ionizing radiation can best be investigated using monoenergetic heavy charged particle beams. Questions of the role of different types of damage in the LET effect, for example, are being answered by comparing repair kinetics for damage induced by electrons with that produced by helium ions. However, as the models become more sophicated, the differences between models can be detected only with more precise measurements, or by combining high- and low-LET irradiations in split-dose experiments. The design of the authors present cell irradiation beam line has limited the authors to irradiating cells in a partial vacuum. A new way to mount the dishes and bring the beam to the cells was required. Several means of irradiating cells in mylar-bottom dishes have been used at other laboratories. For example at the RARAF Facility, the dual ion experiments are done with the dish bottom serving as the beam exit window but the cells are in a partial vacuum to prevent breaking the window. These researchers have chosen instead to use the dish bottom as the beam window and to irradiate the entire dish in a single exposure. A special, very fast pumping system will be installed at the end of the beam line. This system will make it possible to irradiate cells within two minutes of installing them in the irradiation chamber. In this way, the interaction of electron and ion-induced damage in Chlamydomonas can be studied with time between doses as short as 5 minutes

Optical properties of Ar ions irradiated nanocrystalline ZrC and ZrN thin films

Energy Technology Data Exchange (ETDEWEB)

Martin, C. [Ramapo College of New Jersey, Mahwah, NJ 07430 (United States); Miller, K.H. [NASA Goddard Space Flight Center, Greenbelt, MD 20771 (United States); Makino, H. [Research Institute, Kochi University of Technology, Kami, Kochi, 782-8502 (Japan); Craciun, D. [National Institute for Laser, Plasma, and Radiation Physics, Bucharest-Magurele (Romania); Simeone, D. [CEA/DEN/DANS/DM2S/SERMA/LEPP-LRC CARMEN CEN Saclay France & CNRS/ SPMS UMR8785 LRC CARMEN, Ecole Centrale de Paris, F92292, Chatenay Malabry (United States); Craciun, V., E-mail: valentin.craciun@inflpr.ro [National Institute for Laser, Plasma, and Radiation Physics, Bucharest-Magurele (Romania)

2017-05-15

Employing wide spectral range (0.06–6 eV) optical reflectance measurements and high energy X-ray photoemission spectroscopy (HE-XPS), we studied the effect of 800 keV Ar ion irradiation on optical and electronic properties of nanocrystalline ZrC and ZrN thin films, which were obtain by the pulsed laser deposition technique. Both in ZrC and ZrN, we observed that irradiation affects the optical properties of the films mostly at low frequencies, which is dominated by the free carriers response. In both materials, we found a significant reduction in the free carriers scattering rate and an increase of the zero frequency conductivity, i.e. possible increase in mobility, at higher irradiation fluence. This is consistent with our previous findings that irradiation affects the crystallite size and the micro-strain, but it does not induce major changes in the chemical bonding. HE-XPS investigations further confirms the stability of the Zr-C and Zr-N bonds, despite a small increase in the surface region of the Zr-O bonds fraction with increasing irradiation fluence.

Research into releasing inorganic phosphate and base from 5'-dTMP irradiated by a low energy ion beam

International Nuclear Information System (INIS)

Shao Chunlin; Yu Zengliang

1994-01-01

Research into radiation damage of nucleotide is an important area in radiation biology. In this paper, the yield of inorganic phosphate and base released from 5'-dTMP irradiated by a 30 keV N + ion beam was investigated in several aspects. The effect of particle fluence on yield and the influence of treatment with 0.1 N NaOH was deduced. By analysis, it is known that the alkali treatment not only increases the yield of inorganic phosphate, but also damages and splits the base released from irradiated 5'-dTMP. When the irradiated samples are treated by 0.1 N NaOH immediately, the yield of inorganic phosphate is increased by a factor of 1.7 and the concentration of base decreased to half of the original value. But the yield of inorganic phosphate could be increased by a factor of 2.8 after 40 min of alkali treatment. On the other hand, when 5'dTMP was irradiated by the ion beam, the G(Pi) obtained was above 0.44, higher than with γ-radiation. (Author)

Effect of irradiation spectrum on the microstructure of ion-irradiated Al2O3

International Nuclear Information System (INIS)

Zinkle, S.J.

1994-01-01

Polycrystalline samples of alpha-alumina have been irradiated with various ions ranging from 3.6 MeV Fe + to 1 MeV H + ions at 650 C. Cross-section transmission electron microscopy was used to investigate the depth-dependent microstructure of the irradiated specimens. The microstructure following irradiation was observed to be dependent on the irradiation spectrum. In particular, defect cluster nucleation was effectively suppressed in specimens irradiated with light ions such as 1 MeV H + ions. On the other hand, light ion irradiation tended to accelerate the growth rate of dislocation loops. The microstructural observations are discussed in terms of ionization enhanced diffusion processes

Momenta of particles emitted by target at intensive irradiation by low-energy ions

CERN Document Server

Beshenkov, V G; Marchenko, V A

2002-01-01

One measured the aggregate momenta of the target emitted particles at the intensive sputtering by E sub 0 approx = 0.5 keV energy heavy inert gases. For liquid and being under premelting temperature Ga target the measured values are close to the expected momenta of sputtered metallic atoms and reflection ions, for Cu and Zr targets they are essentially higher. One assumes that sputtering of atoms of gas-diffuser implanted into the target causes the surplus momentum. The estimated average energy of these atoms approx = 20 eV. Under Ga irradiation the implanted atoms diffuse mainly towards the surface and are desorbed

Ion beam irradiation effects on aromatic polymers

International Nuclear Information System (INIS)

Shukushima, Satoshi; Ueno, Keiji

1995-01-01

We studied the optical and thermal properties of aromatic polymer films which had been irradiated with 1 MeV H + , H 2 + and He + ions. The examined aromatic polymers were polyetherether ketone(PEEK), polyetherimide(PEI), polyether sulfon(PES), polysulfon(PSF), and polyphenylene sulfide(PPS). The optical densities at 300nm of PES and PSF greatly increased after the irradiation. The optical densities at 400nm of all the examined polymer lineally increased with the irradiation dose. The PEEK film which had been irradiated with 1 MeV H + was not deformed above melting point. This demonstrates that cross-linking occurs in PEEK films by ion beam irradiation. As for the effects, depending on the mass of the irradiated ions, it was found that the ions with a high mass induced larger effects on the aromatic polymers for the same absorption energy. (author)

Electron beam dosimetry for a thin-layer absorber irradiated by 300-keV electrons

International Nuclear Information System (INIS)

Kijima, Toshiyuki; Nakase, Yoshiaki

1993-01-01

Depth-dose distributions in thin-layer absorbers were measured for 300-keV electrons from a scanning-type irradiation system, the electrons having penetrated through a Ti-window and an air gap. Irradiations of stacks of cellulose triacetate(CTA) film were carried out using either a conveyor (i.e. dynamic irradiation) or fixed (i.e. static) irradiation. The sample was irradiated using various angles of incidence of electrons, in order to examine the effect of obliqueness of electron incidence at low-energy representative of routine radiation curing of thin polymeric or resin layers. Dynamic irradiation gives broader and shallower depth-dose distributions than static irradiation. Greater obliqueness of incident electrons gives results that can be explained in terms of broader and shallower depth-dose distributions. The back-scattering of incident electrons by a metal(Sn) backing material enhances the absorbed dose in a polymeric layer and changes the overall distribution. It is suggested that any theoretical estimations of the absorbed dose in thin layers irradiated in electron beam curing must be accomplished and supported by experimental data such as that provided by this investigation. (Author)

In-situ observation system for dual ion irradiation damage

International Nuclear Information System (INIS)

Furuno, Shigemi; Hojou, Kiichi; Otsu, Hitoshi; Sasaki, T.A.; Izui, Kazuhiko; Tukamoto, Tetsuo; Hata, Takao.

1992-01-01

We have developed an in-situ observation and analysis system during dual ion beam irradiation in an electron microscope. This system consists of an analytical electron microscope of JEM-4000FX type equipped with a parallel EELS and an EDS attachments and linked with two sets of ion accelerators of 40 kV. Hydrogen and helium dual-ion beam irradiation experiments were performed for SiC crystals. The result of dual-ion beam irradiation was compared with those of helium and hydrogen single ion irradiations. It is clearly seen that the dual-ion irradiation has the effect of suppressing bubble formation and growth in comparison with the case of single helium ion irradiation. (author)

Radiation-induced segregation at grain boundaries in AL-6XN stainless steels irradiated by hydrogen ions

Science.gov (United States)

Long, Yunxiang; Zheng, Zhongcheng; Guo, Liping; Zhang, Weiping; Shen, Zhenyu; Tang, Rui

2018-04-01

The effect of high concentration of hydrogen on the segregation of radiation-induced segregation (RIS) in AL-6XN stainless steels has been investigated by transmission electron microscopy (TEM) with energy-dispersive X-ray spectroscopy. Specimens were irradiated with 100 keV H2+ ions from 1 dpa to 5 dpa at 380 °C to investigated the dose dependence of grain boundary RIS. A specimen was irradiated to 5 dpa at 290 °C to study the effect of irradiation temperature. The trends of Cr depletion and Ni enrichment with irradiation dose is similar to that of other austenitic steels reported in the literatures, but the higher concentration of hydrogen made the RIS profile wider. An abnormal phenomenon that the degree of RIS increased with decreasing irradiation temperature was found, indicating that with the retention of hydrogen in the steels, temperature dependence of RIS is dominated by the quantity of retained hydrogen, rather than by thermal segregation processes.

A study on the microstructural parameters of 550 keV electron irradiated Lexan polymer films

International Nuclear Information System (INIS)

Hareesh, K.; Pramod, R.; Petwal, V. C.; Dwivedi, Jishnu; Sangappa; Sanjeev, Ganesh

2012-01-01

Lexan polymer films irradiated with 550 keV Electron Beam (EB) were characterized using Wide Angle Xray Scattering (WAXS) data to study the microstructural parameters. The crystal imperfection parameters like crystal size , lattice strain (g in %) and enthalpy (α) have been determined by Line Profile Analysis (LPA) using Fourier method of Warren.

Improvement of Electrical Conductivity of Single-Walled Carbon Nano tube Network Using Particle Irradiation

International Nuclear Information System (INIS)

Lim, Suntaek; Kim, Gonho

2010-01-01

Substitution for Indium Tin Oxide of transparent electrode Applications : Flat panel displays, Touch panel, Solar cell, EM wave shielding... For very low energy of 20 eV and 90 eV, argon ion irradiations, the surface of SWCNT bundles were sputtered and thinned the diameter of the bundle. With increasing the incident ion energy as 7.5 keV, SWCNT bundles were networked by amorphization of cross welded CNTs. → Less damage can be obtained from higher energy of irradiated particle due to less collision cross section. For 10 MeV proton and 800 keV electron irradiations, there are no severe damages. Electron irradiation is more effective on network with less damage than that of ion irradiation. → Network process can be proceeded with the generation of free carbon, the migration of free carbon on CNT and reconstruction of the cross linked CNTs, which processes require the latent energy on CNT body after collision. It can be controlled by the energy and dose of irradiation particle

Effects of ion beam irradiation on semiconductor devices

Energy Technology Data Exchange (ETDEWEB)

Nashiyama, Isamu; Hirao, Toshio; Itoh, Hisayoshi; Ohshima, Takeshi [Japan Atomic Energy Research Inst., Takasaki, Gunma (Japan). Takasaki Radiation Chemistry Research Establishment

1997-03-01

Energetic heavy-ion irradiation apparatus has been developed for single-event effects (SEE) testing. We have applied three irradiation methods such as a scattered-ion irradiation method, a recoiled-atom irradiation method, and a direct-beam irradiation method to perform SEE testing efficiently. (author)

A 2-100 keV, UHV ion impact spectrometer for ion-solid interaction studies

International Nuclear Information System (INIS)

Berg, J.A. Van den; Armour, D.G.; Verheij, L.K.

1978-01-01

A 2 to 100 keV ion accelerator has been constructed as part of an ion impact spectrometer in which a number of analytical techniques have been combined to allow a comprehensive study of the interaction of low- and medium-energy ions with solids to be carried out under carefully controlled conditions. The overall requirements of the ion beam system in terms of ion species, beam purity, uniformity, energy spread and intensity were dictated by the interest in carrying out low-energy ion scattering, Rutherford back-scattering and thermal desorption experiments. The accelerator design utilises the principle of low-energy extraction and mass analysis, and post-acceleration up to the required high energy. The ions are produced in a duoplasmatron ion source and a parallel beam is obtained after mass selection, utilising a quadrupole triplet lens in conjunction with a 60 0 stigmatic focusing magnetic analyser. Proton and rare gas ion beams of 1 to 100 nA are routinely obtained on target. The 54 cm diameter, UHV target chamber is pumped by a 270 1 s -1 turbo-molecular pump in conjunction with an in-line titanium sublimator, and typical base pressures of 1 to 4 x 10 -11 Torr are achieved. The target is supported in a precision, three-axis goniometer and the detection system, at present comprising a 90 mm mean diameter hemispherical energy analyser and channel electron multiplier, is mounted on a two-axis manipulator. Preliminary measurements using the system have employed the low-energy ion scattering technique to study the oxidation of a Ni(110) surface. (author)

Charge yield for cobalt-60 and 10-keV x-ray irradiations of MOS devices

International Nuclear Information System (INIS)

Shaneyfelt, M.R.; Fleetwood, D.M.; Schwank, J.R.; Hughes, K.L.

1991-01-01

In this paper the radiation response of MOS devices exposed to 60 Co and low-energy (∼10 keV) x-ray irradiation is evaluated as a function of electric field during exposure. Improved charge yield estimates are obtained for 60 Co irradiations at fields below 1 MV/cm by matching voltage shifts due to oxide-trap and interface-trap charge to an E -0.55 electric field dependence. Combining these improved charge yield estimates and calculated dose enhancement factors, the relative response of x-ray to 60 Co irradiations is accurately predicted for oxide electric fields from 0.03 MV/cm to 5.0 MV/cm. The ability to predict the relative response of x-ray to 60 Co irradiations should speed acceptance of x-ray testers as a hardness assurance tool

Fractal characterization of the silicon surfaces produced by ion beam irradiation of varying fluences

Energy Technology Data Exchange (ETDEWEB)

Yadav, R.P. [Department of Physics, University of Allahabad, Allahabad, UP 211002 (India); Kumar, T. [Department of Physics, Central University of Haryana, Jant-Pali, Mahendergarh, Haryana 123029 (India); Mittal, A.K. [Department of Physics, University of Allahabad, Allahabad, UP 211002 (India); K Banerjee Centre of Atmospheric and Ocean Studies, University of Allahabad, Allahabad, UP 211002 (India); Dwivedi, S., E-mail: suneetdwivedi@gmail.com [K Banerjee Centre of Atmospheric and Ocean Studies, University of Allahabad, Allahabad, UP 211002 (India); Kanjilal, D. [Inter-University Accelerator Centre, Aruna Asaf Ali Marg, PO Box 10502, New Delhi 110 067 (India)

2015-08-30

Highlights: • Fractal analysis of Si(1 0 0) surface morphology at varying ion fluences. • Autocorrelation function and height–height correlation function as fractal measures. • Surface roughness and lateral correlation length increases with ion fluence. • Ripple pattern of the surfaces is found at higher ion fluences. • Wavelength of the ripple surfaces is computed for each fluence. - Abstract: Si (1 0 0) is bombarded with 200 keV Ar{sup +} ion beam at oblique incidence with fluences ranging from 3 × 10{sup 17} ions/cm{sup 2} to 3 × 10{sup 18} ions/cm{sup 2}. The surface morphology of the irradiated surfaces is captured by the atomic force microscopy (AFM) for each ion fluence. The fractal analysis is performed on the AFM images. The autocorrelation function and height–height correlation function are used as fractal measures. It is found that the average roughness, interface width, lateral correlation length as well as roughness exponent increase with ions fluence. The analysis reveals the ripple pattern of the surfaces at higher fluences. The wavelength of the ripple surfaces is computed for each ion fluence.

Utilizing Neon Ion Microscope for GaSb nanopatterning studies: Nanostructure formation and comparison with low energy nanopatterning

International Nuclear Information System (INIS)

El-Atwani, Osman; Huynh, Chuong; Norris, Scott

2016-01-01

Graphical abstract: - Highlights: • Carl Zeiss-neon ion microscope was used to irradiated GaSb surfaces with 5 keV neon. • In-situ imaging using helium beam and ex-situ imaging using an electron beam were performed. • Differences in imaging output between the helium and the electron beam were observed. • Transition occurred in the nanostructure type and formation mechanism as the energy is changed from 2 to 5 keV. • Collision cascade simulations suggested a transition toward bulk-driven mechanisms. - Abstract: Low energy irradiation of GaSb surfaces has been shown to lead to nanopillar formation. Being performed ex-situ, controlling the parameters of the ion beam for controlled nanopattern formation is challenging. While mainly utilized for imaging and cutting purposes, the development of multibeam (helium/neon) ion microscopes has opened the path towards the use of these microscopes for in-situ ion irradiation and nanopatterning studies. In this study, in-situ irradiation (neon ions)/imaging (helium ions) of GaSb surfaces is performed using Carl Zeiss-neon ion microscope at low energies (5 and 10 keV). Imaging with helium ions, nanodots were shown to form at particular fluences after which are smoothed. Ex-situ imaging with SEM showed nanopore formation of size controlled by the ion energy and fluence. Compared to lower energy ex-situ neon ion irradiation at similar fluxes, where nanopillars are formed, the results demonstrated a transition in the nanostructure type and formation mechanism as the energy is changed from 2 to 5 keV. Simulations show an increase in the ballistic diffusion and a decrease in the strength of phase separation as a function of ion energy in agreement with the suppression of nanopillar formation at higher energies. Collision cascade simulations suggest a transition toward bulk-driven mechanisms.

Utilizing Neon Ion Microscope for GaSb nanopatterning studies: Nanostructure formation and comparison with low energy nanopatterning

Energy Technology Data Exchange (ETDEWEB)

El-Atwani, Osman, E-mail: oelatwan25@gmail.com [School of Nuclear Engineering, Purdue University, West Lafayette, Indiana 47907 (United States); Huynh, Chuong [Carl Zeiss Microscopy, LLC, One Corporation Way, Peabody, MA 01960 (United States); Norris, Scott [Department of Mathematics, Southern Methodist University, Dallas, TX 75275 (United States)

2016-05-01

Graphical abstract: - Highlights: • Carl Zeiss-neon ion microscope was used to irradiated GaSb surfaces with 5 keV neon. • In-situ imaging using helium beam and ex-situ imaging using an electron beam were performed. • Differences in imaging output between the helium and the electron beam were observed. • Transition occurred in the nanostructure type and formation mechanism as the energy is changed from 2 to 5 keV. • Collision cascade simulations suggested a transition toward bulk-driven mechanisms. - Abstract: Low energy irradiation of GaSb surfaces has been shown to lead to nanopillar formation. Being performed ex-situ, controlling the parameters of the ion beam for controlled nanopattern formation is challenging. While mainly utilized for imaging and cutting purposes, the development of multibeam (helium/neon) ion microscopes has opened the path towards the use of these microscopes for in-situ ion irradiation and nanopatterning studies. In this study, in-situ irradiation (neon ions)/imaging (helium ions) of GaSb surfaces is performed using Carl Zeiss-neon ion microscope at low energies (5 and 10 keV). Imaging with helium ions, nanodots were shown to form at particular fluences after which are smoothed. Ex-situ imaging with SEM showed nanopore formation of size controlled by the ion energy and fluence. Compared to lower energy ex-situ neon ion irradiation at similar fluxes, where nanopillars are formed, the results demonstrated a transition in the nanostructure type and formation mechanism as the energy is changed from 2 to 5 keV. Simulations show an increase in the ballistic diffusion and a decrease in the strength of phase separation as a function of ion energy in agreement with the suppression of nanopillar formation at higher energies. Collision cascade simulations suggest a transition toward bulk-driven mechanisms.

Influence of ionic parameters on Auger emission by aluminium, induced by medium energy ions (2 to 5 keV)

International Nuclear Information System (INIS)

Celier, Dominique

1987-01-01

This research thesis reports the study of excitation collision mechanisms of metal atoms under irradiation by electrons with energy lower than or equal to 5 keV. After having outlined why this energy range is interesting, and indicated the different aluminium single crystals used in this study, the author describes the main involved emission phenomena related to the series of collisions due to emissions of different particles (electrons, photons, neutral or ionized atoms, backscattered primary ions). In the second part, the author recalls the characteristics of an Auger emission induced by ionic bombardment. Then, he presents the experimental installation which has been calibrated in order to allow the comparison of spectra induced under irradiations with different characteristics. Experimental results are reported and discussed. The cascade of binary shocks has also been examined. The scattering integral has been computed for several simple cases of collision, and allowed the definition of different conditions of excitation and ejection of excited atoms, depending on the fact that the ionizing shock is asymmetric or symmetric [fr

Studies on watermelon somatic cell mutant of resistance to fusaric acid (FA) by low energy Ar+ ion beam irradiation

International Nuclear Information System (INIS)

Wang Haobo; Gu Yunhong; Cheng Guowang; Yu Zengliang

2003-01-01

Three kinds of watermelon seeds irradiated by Ar + ion beam (25 keV, 6.24 x 10 16 ions/cm 2 ) were inoculated in MS medium with 15 mg/L FA. Cotyledons from the sterile seedling as explants were inoculated in MS +BA 2.0 mg/L + FA 15 mg/L. And the adventitious shoots of resistance to FA were cultured in MS + NAA 0.2 mg/L + FA 15 mg/L. The results showed that both the irradiation of Ar + and FA affected the germination rate and seedling of watermelon line 3-27 and YH-5, and the joint effect of Ar + and FA showed an enhanced restraint. The adventitious shoot and rootage induction rate from the seeds irradiated by Ar + were respectively bigger than the unirradiated seeds in 3-27 and YH-5. The increasing ranges were different between two watermelon lines and between the shoot and rootage induction rates

3–10 keV Xe+ ion beam machining of ultra low thermal expansion glasses for EUVL projection optics: Evaluation of surface roughness

International Nuclear Information System (INIS)

Morikawa, K.; Kamijo, K.; Morijiri, K.; Pahlovy, S.A.; Aikawa, N.; Miyamoto, I.

2012-01-01

In order to obtain surface figure error of 0.15 nm rms and surface roughness (R rms ) of 0.12 nm rms for aspherical substrates in EUVL tools, ion beam figuring may be adopted to final surface figure error correction of aspherical substrates. During figure error correction, machined surface of the substrate becomes rougher than the pre-finished one. Therefore, we investigated the machined depth and ion energy dependences of R rms (measured by an AFM) of substrates machined by 3–10 keV Xe + ion beam, and compared them with the results obtained for Ar + ion beam. Result shows that the R rms s of CLEARCERAM®-Z, Zerodur® and ULE® substrates machined to the depth of 50 nm by 3–10 keV Xe + ion beam at the normal ion incidence angle become approximately 0.25, 0.28 and 0.15 nm rms, respectively. Those values are larger than the pre-finished substrates (0.07–0.09 nm rms), but smaller than that (0.60 nm rms for CLEARCERAM®-Z, 0.61 nm rms for Zerodur® and 0.18 nm rms for ULE®) of the substrates machined by Ar + ion beam. Moreover, the R rms s merely increase with increasing ion energy. The R rms s of the ULE® substrate machined by 3–10 keV Xe + ion beam rapidly increase with increasing machined depth, then saturate at machined depth of 10–50 nm. The saturated values of the R rms s are 0.12 and 0.15 nm rms for 3 and 10 keV Xe + ion beam respectively. We suggest that the 3 keV Xe + ion beam machining can be applicable for final shape correction of ULE® substrates for EUVL projection optics in association with considering further ultra smoothing process such as Si deposition or low energy ion beam smoothing.

Microstructure of RERTR DU-alloys irradiated with krypton ions up to 100 dpa

Energy Technology Data Exchange (ETDEWEB)

Gan, J. [Nuclear Fuels and Materials Division, Idaho National Laboratory, P.O. Box 1625, Idaho Falls, ID 83415-6188 (United States); Keiser, D.D., E-mail: Dennis.Keiser@inl.gov [Nuclear Fuels and Materials Division, Idaho National Laboratory, P.O. Box 1625, Idaho Falls, ID 83415-6188 (United States); Miller, B.D.; Wachs, D.M. [Nuclear Fuels and Materials Division, Idaho National Laboratory, P.O. Box 1625, Idaho Falls, ID 83415-6188 (United States); Allen, T.R. [Department of Engineering Physics, University of Wisconsin, 1500 Engineering Drive, Madison, WI 53706 (United States); Kirk, M.; Rest, J. [Materials Science Division, Argonne National Laboratory, 9700 S. Cass Ave, Argonne, IL 60439 (United States)

2011-04-15

The radiation stability of the interaction product formed at the fuel-matrix interface of research reactor dispersion fuels, under fission-product bombardment, has a strong impact on fuel performance. Three depleted uranium alloys were cast that consisted of the following five phases to be investigated: U(Si, Al){sub 3}, (U, Mo)(Si, Al){sub 3}, UMo{sub 2}Al{sub 20}, U{sub 6}Mo{sub 4}Al{sub 43}, and UAl{sub 4}. Irradiation of transmission electron microscopy (TEM) disc samples with 500-keV Kr ions at 200 deg. C to doses up to {approx}100 displacements per atom (dpa) were conducted using a 300-keV electron microscope equipped with an ion accelerator. TEM results show that the U(Si, Al){sub 3} and UAl{sub 4} phases remain crystalline at 100 dpa without forming voids. The (U, Mo)(Si, Al){sub 3} and UMo{sub 2}Al{sub 20} phases become amorphous at 1 and {approx}2 dpa, respectively, and show no evidence of voids at 100 dpa. The U{sub 6}Mo{sub 4}Al{sub 43} phase goes to amorphous at less than 1 dpa and reveals high density voids at 100 dpa.

Thin TaC layer produced by ion mixing

DEFF Research Database (Denmark)

Barna, Árpád; Kotis, László; Pécz, Béla

2012-01-01

in strongly asymmetric ion mixing; the carbon was readily transported to the Ta layer, while the reverse process was much weaker. Because of the asymmetrical transport the C/TaC interface remained sharp independently from the applied fluence. The carbon transported to the Ta layer formed Ta......Ion-beam mixing in C/Ta layered systems was investigated. C 8nm/Ta 12nm and C 20nm/Ta 19nm/C 20nm layer systems were irradiated by Ga+ ions of energy in the range of 2–30keV. In case of the 8nm and 20nm thick C cover layers applying 5–8keV and 20–30keV Ga+ ion energy, respectively resulted...

Effect of irradiation with <200 keV electrons on AG-80 resin

Energy Technology Data Exchange (ETDEWEB)

Gao Yu [School of Materials Science and Engineering, Harbin Institute of Technology, 432 Heilongjiang province, Harbin 150001 (China)]. E-mail: czq04@yahoo.com.cn; Jiang Shengling [College of Materials Science and Engineering, Beijing University of Chemical Technology, Beijing 100029 (China); Sun Mingren [School of Materials Science and Engineering, Harbin Institute of Technology, 432 Heilongjiang province, Harbin 150001 (China); Yang Dezhuang [School of Materials Science and Engineering, Harbin Institute of Technology, 432 Heilongjiang province, Harbin 150001 (China); He Shiyu[School of Materials Science and Engineering, Harbin Institute of Technology, 432 Heilongjiang province, Harbin 150001 (China); Li Zhijun [39th Institute, China Electronic Science and Technology Groups Inc., Xi-an 710065 (China)

2005-08-01

AG-80 resin, namely tetraglycidyl diaminodiphenyl methane (TGDDM), is a new type of thermosetting matrix for advanced carbon/epoxy composites, which was irradiated with electrons of 160 keV. The results show that by increasing the fluence to 6.3x10{sup 15} cm{sup -2}, the mass loss ratio ascends dramatically and then tends to level off. The mass loss behavior can be attributed to the combined effects of the formation of gaseous radiolytic products and a degraded layer, the surface ablation due to discharging and the skin carbon enrichment.

Depth distribution of bubbles in 4He+-ion irradiated nickel and the mechanism of blister formation

International Nuclear Information System (INIS)

Fenske, G.; Das, S.K.; Kaminsky, M.; Miley, G.H.

1978-01-01

While the radiation blistering phenomenon has been widely studied, the mechanism of blister formation is still not well understood. The present studies on depth distribution of helium bubbles in nickel were carried out in order to obtain a better understanding of the radiation blistering process. Particularly, the aim was to understand the experimental observation that the blister skin thickness for many metals irradiated with He + ions of energies lower than 20-keV is a factor of two or more larger than the calculated projected range. (Auth.)

Quartz modification by Zn ion implantation and swift Xe ion irradiation

Energy Technology Data Exchange (ETDEWEB)

Privezentsev, Vladimir [Institute of Physics and Technology, Russian Academy of Sciences, Moscow (Russian Federation); Kulikauskas, Vaclav [Skobeltsyn Institute of Nuclear Physics, Lomonosov Moscow State University (Russian Federation); Didyk, Alexander; Skuratov, Vladimir [Joint Institute of Nuclear Research, Dubna (Russian Federation); Steinman, Edward; Tereshchenko, Alexey; Kolesnikov, Nikolay [Institute of Solid-State Physics, Russian Academy of Sciences, Chernogolovka (Russian Federation); Trifonov, Alexey; Sakharov, Oleg [National Research University ' ' MIET' ' , Zelenograd, Moscow (Russian Federation); Ksenich, Sergey [National University of Science and Technology ' ' MISiS' ' , Moscow (Russian Federation)

2017-07-15

The quartz slides were implanted by {sup 64}Zn{sup +} ions with dose of 5 x 10{sup 16}/cm{sup 2} and energy of 100 keV. After implantation, the amorphous metallic Zn nanoparticles with an average radius of 3.5 nm were created. The sample surface becomes nonuniform, its roughness is increased and its values rise up to 6 nm compared to virgin state, and the roughness maximum is at a value of about 0.8 nm. The surface is made up of valleys and hillocks which have a round shape with an average diameter about 200 nm. At the center of these hillocks are pores with a depth up to 6 nm and a diameter of about 20 nm. After implantation in UV-vis diapason, the optical transmission decreases while PL peak (apparently due to oxygen deficient centers) at wavelength of 400 nm increases. Then the samples were subjected to swift Xe ion irradiation with the fluences of 1 x 10{sup 12}-7.5 x 10{sup 14}/cm{sup 2} and energy of 167 MeV. After Xe irradiation, the sample surface roughness shat down to values of 0.5 nm and the roughness maximum is at a value of about 0.1 nm. Optical transmission in UV-vis diapason increases. The PL peak at wavelength of 400 nm is decreased while a PL peak at wavelength of 660 nm is raised. This peak is presumably due to non-bridging oxygen hole centers or/and NPs with structure Si(core)/SiO{sub 2}(shell). HRTEM image of Zn-implanted quartz subsurface layer. One can see the Zn amorphous nanoparticles, which confirms the electron diffraction pattern (insert). (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Heavy Ion Irradiation Effects in Zirconium Nitride

International Nuclear Information System (INIS)

Egeland, G.W.; Bond, G.M.; Valdez, J.A.; Swadener, J.G.; McClellan, K.J.; Maloy, S.A.; Sickafus, K.E.; Oliver, B.

2004-01-01

Polycrystalline zirconium nitride (ZrN) samples were irradiated with He + , Kr ++ , and Xe ++ ions to high (>1.10 16 ions/cm 2 ) fluences at ∼100 K. Following ion irradiation, transmission electron microscopy (TEM) and grazing incidence X-ray diffraction (GIXRD) were used to analyze the microstructure and crystal structure of the post-irradiated material. For ion doses equivalent to approximately 200 displacements per atom (dpa), ZrN was found to resist any amorphization transformation, based on TEM observations. At very high displacement damage doses, GIXRD measurements revealed tetragonal splitting of some of the diffraction maxima (maxima which are associated with cubic ZrN prior to irradiation). In addition to TEM and GIXRD, mechanical property changes were characterized using nano-indentation. Nano-indentation revealed no change in elastic modulus of ZrN with increasing ion dose, while the hardness of the irradiated ZrN was found to increase significantly with ion dose. Finally, He + ion implanted ZrN samples were annealed to examine He gas retention properties of ZrN as a function of annealing temperature. He gas release was measured using a residual gas analysis (RGA) spectrometer. RGA measurements were performed on He-implanted ZrN samples and on ZrN samples that had also been irradiated with Xe ++ ions, in order to introduce high levels of displacive radiation damage into the matrix. He evolution studies revealed that ZrN samples with high levels of displacement damage due to Xe implantation, show a lower temperature threshold for He release than do pristine ZrN samples. (authors)

Ion irradiated graphite exposed to fusion-relevant deuterium plasma

International Nuclear Information System (INIS)

Deslandes, Alec; Guenette, Mathew C.; Corr, Cormac S.; Karatchevtseva, Inna; Thomsen, Lars; Ionescu, Mihail; Lumpkin, Gregory R.; Riley, Daniel P.

2014-01-01

Graphite samples were irradiated with 5 MeV carbon ions to simulate the damage caused by collision cascades from neutron irradiation in a fusion environment. The ion irradiated graphite samples were then exposed to a deuterium plasma in the linear plasma device, MAGPIE, for a total ion fluence of ∼1 × 10 24 ions m −2 . Raman and near edge X-ray absorption fine structure (NEXAFS) spectroscopy were used to characterize modifications to the graphitic structure. Ion irradiation was observed to decrease the graphitic content and induce disorder in the graphite. Subsequent plasma exposure decreased the graphitic content further. Structural and surface chemistry changes were observed to be greatest for the sample irradiated with the greatest fluence of MeV ions. D retention was measured using elastic recoil detection analysis and showed that ion irradiation increased the amount of retained deuterium in graphite by a factor of four

The effect of incidence angle on ion bombardment induced surface topography development on single crystal copper

International Nuclear Information System (INIS)

Carter, G.; Nobes, M.J.; Lewis, G.W.; Whitton, J.L.

1982-01-01

The fluence dependence of development of microscopic surface features, particularly etch pits, during 9 keV Ar + ion bombardment of (11,3,1) oriented Cu single crystals has been studied employing quasi-dynamic irradiation and observation techniques in a scanning electron microscope-accelerator system. 9 keV ions are observed not to produce crystallographic pyramids under all irradiation conditions for this surface, a very different result from our earlier studies with higher energy ions. The bombardment does elaborate etch pits however, the habits and growth kinetics of which depend upon both polar and azimuthal angles of ion incidence to the surface. The results are explained in terms of differential erosion of crystal planes modified by the presence of pre-existing and irradiation induces extended defects. (orig.)

In-situ transmission electron microscopy study of ion-irradiated copper : comparison of the temperature dependence of cascade collapse in FCC- and BCC- metals.

Energy Technology Data Exchange (ETDEWEB)

Daulton, T. L.

1998-10-23

The kinetics which drive cascade formation and subsequent collapse into point-defect clusters is investigated by analyzing the microstructure produced in situ by low fluence 100 keV Kr ion irradiations of fcc-Cu over a wide temperature range (18-873 K). The yield of collapsed point-defect clusters is demonstrated unequivocally to be temperature dependent, remaining approximately constant up to lattice temperatures of 573 K and then abruptly decreasing with increasing temperature. This drop in yield is not caused by defect loss during or following ion irradiation. This temperature dependence can be explained by a thermal spike effect. These in-situ yield measurements are compared to previous ex-situ yield measurements in fcc-Ni and bcc-Mo.

Growth and instability of charged dislocation loops under irradiation in ceramic materials

CERN Document Server

Ryazanov, A I; Kinoshita, C; Klaptsov, A V

2002-01-01

We have investigated the physical mechanisms of the growth and stability of charged dislocation loops in ceramic materials with very strong different mass of atoms (stabilized cubic zirconia) under different energies and types of irradiation conditions: 100-1000 keV electrons, 100 keV He sup + and 300 keV O sup + ions. The anomalous formation of extended defect clusters (charged dislocation loops) has been observed by TEM under electron irradiation subsequent to ion irradiation. It is demonstrated that very strong strain field (contrast) near charged dislocation loops is formed. The dislocation loops grow up to a critical size and after then become unstable. The instability of the charged dislocation loop leads to the multiplication of dislocation loops and the formation of dislocation network near the charged dislocation loops. A theoretical model is suggested for the explanation of the growth and stability of the charged dislocation loop, taking the charge state of point defects. The calculated distribution...

Degradation mechanisms of optoelectric properties of GaN via highly-charged 209Bi33+ ions irradiation

Science.gov (United States)

Zhang, L. Q.; Zhang, C. H.; Xian, Y. Q.; Liu, J.; Ding, Z. N.; Yan, T. X.; Chen, Y. G.; Su, C. H.; Li, J. Y.; Liu, H. P.

2018-05-01

N-type gallium nitride (GaN) epitaxial layers were subjected to 990-keV Bi33+ ions irradiation to various fluences. Optoelectric properties of the irradiated-GaN specimens were studied by means of Raman scattering and variable temperature photoluminescence (PL) spectroscopy. Raman spectra reveal that both the free-carrier concentration and its mobility generally decrease with a successive increase in ion fluence. Electro-optic mechanisms dominated the electrical transport to a fluence of 1.061 × 1012 Bi33+/cm2. Above this fluence, electrical properties were governed by the deformation potential. The appearance of vacancy-type defects results in an abrupt degradation in electrical transports. Varying temperature photoluminescence (PL) spectra display that all emission lines of 1.061 × 1012 Bi33+/cm2-irradiated specimen present a general remarkable thermal redshift, quenching, and broadening, including donor-bound-exciton peak, yellow luminescence band, and LO-phonon replicas. Moreover, as the temperature rises, a transformation from excitons (donor-acceptor pairs' luminescence) to band-to-band transitions (donor-acceptor combinations) was found, and the shrinkage effect of the band gap dominated the shift of the peak position gradually, especially the temperature increases above 150 K. In contrast to the un-irradiated specimen, a sensitive temperature dependence of all photoluminescence (PL) lines' intensity obtained from 1.061 × 1012 Bi33+/cm2-irradiated specimen was found. Mechanisms underlying were discussed.

Surface damage studies of ETFE polymer bombarded with low energy Si ions (≤100 keV)

International Nuclear Information System (INIS)

Minamisawa, Renato Amaral; Almeida, Adelaide De; Budak, Satilmis; Abidzina, Volha; Ila, Daryush

2007-01-01

Surface studies of ethylenetetrafluoroethylene (ETFE), bombarded with Si in a high-energy tandem Pelletron accelerator, have recently been reported. Si ion bombardment with a few MeV to a few hundred keV energies was shown to be sufficient to produce damage on ETFE film. We report here the use of a low energy implanter with Si ion energies lower than 100 keV, to induce changes on ETFE films. In order to determine the radiation damage, ETFE bombarded films were simulated with SRIM software and analyzed with optical absorption photometry (OAP), Raman and Fourier transform infrared-attenuated total reflectance (FTIR-ATR) spectroscopy to show quantitatively the physical and chemical property changes. Carbonization occurs following higher dose implantation, and hydroperoxides were formed following dehydroflorination of the polymer

Installation of the Ion Accelerator for the Surface Analysis

Energy Technology Data Exchange (ETDEWEB)

Kwon, Hyeok-Jung; Kim, Han-Sung; Chung, Bo-Hyun; Ahn, Tae-Sung; Kim, Dae-Il; Kim, Cho-Rong; Cho, Yong-Sub [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of)

2015-10-15

In this paper, an introduction to the accelerator, an installation status at KOMAC and the operation plan of the accelerator are discussed. A pelletron, which has been used over 25 years at KIGAM, is moved and installed at KOMAC in order to supply a qualified service to ion beam users. The system will be installed in September and component tests will be carried. The operation of the system starts in 2016 after it gets operation license from Nuclear Safety and Security Commission. Korea Multi-purpose Accelerator Complex (KOMAC) is operating several ion beam accelerators to provide various ion beams to users. Those are a 100 MeV proton linear accelerator, a 220 keV ion implanter for gaseous ion beams, a 150 keV metal ion implanter and a 20 keV high-current ion implanter. All of those are the machine for user service and it is important to qualify the results of the irradiation conditions for user service. For this reason, an electrostatic tandem accelerator, which has been operating over 25 years at Korea Institute of Geoscience and Mineral Resources (KIGAM), is moved to KOMAC in order to supply the qualified and quantified data on the irradiation species.

Damage nucleation in Si during ion irradiation

International Nuclear Information System (INIS)

Holland, O.W.; Fathy, D.; Narayan, J.

1984-01-01

Damage nucleation in single crystals of silicon during ion irradiation is investigated. Experimental results and mechanisms for damage nucleation during both room and liquid nitrogen temperature irradiation with different mass ions are discussed. It is shown that the accumulation of damage during room temperature irradiation depends on the rate of implantation. These dose rate effects are found to decrease in magnitude as the mass of the ions is increased. The significance of dose rate effects and their mass dependence on nucleation mechanisms is discussed

Radiation-induced effects in MgO single crystal by 200 keV and 1 MeV Ni ion implantation

Energy Technology Data Exchange (ETDEWEB)

Takahashi, Ryohei; Nakai, Yoshihiro; Hamaguchi, Dai [Kyoto Inst. of Tech. (Japan); and others

1997-03-01

MgO(100) single crystals were implanted with 1.0 MeV and 200 keV Ni ions between 10{sup 15} and 10{sup 17} ions/cm{sup 2} at room temperature. Before and after thermal annealing the radiation damage and the lattice location of implanted Ni ions were analyzed by using Rutherford backscattering spectrometry with channeling and optical absorption measurements. For 1.0 MeV Ni ions, the disorder of Mg atoms increased slowly with ion dose near surface region, while it increased sharply and saturated with ion dose from 2x10{sup 16} ions/cm{sup 2} near ion range. The radiation damage was recovered and implanted Ni ions diffused to the whole of crystal and occupied substitutional positions after 1400degC annealing. For 200 keV Ni ions, the disorder of Mg atoms increased with dose near ion range and had a maximum at about 5x10{sup 16} ions/cm{sup 2}. This tendency agrees with the behavior of color centers obtained from optical measurements. For thermal annealing the radiation damage did not change during 500degC annealing, but the aggregate centers appeared after 300degC annealing. (author)

A highly sensitive CaF{sub 2}:Dy nanophosphor as an efficient low energy ion dosimetry

Energy Technology Data Exchange (ETDEWEB)

Bhadane, Mahesh S.; Hareesh, K.; Dahiwale, S.S.; Sature, K.R. [Microtron Accelerator Laboratory, Department of Physics, Savitribai Phule Pune University, Pune 411007 (India); Patil, B.J. [Department of Physics, Abasaheb Garware College, Pune 411004 (India); Asokan, K.; Kanjilal, D. [Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110067 (India); Bhoraskar, V.N. [Microtron Accelerator Laboratory, Department of Physics, Savitribai Phule Pune University, Pune 411007 (India); Dhole, S.D., E-mail: sanjay@physics.unipune.ac.in [Microtron Accelerator Laboratory, Department of Physics, Savitribai Phule Pune University, Pune 411007 (India)

2016-11-01

Highlights: • CaF{sub 2}:Dy nanophosphor synthesized by chemical co-precipitation route. • Phosphors are irradiated by H, Ar and N low energy ions at different fluences. • LEBI irradiated phosphors are characterized by XRD, TEM, FTIR and PL spectroscopy. • First time report to LEIB irradiated for thermoluminescence dosimetric applications. - Abstract: Dysprosium doped calcium fluoride (CaF{sub 2}:Dy) powers synthesized by co-precipitation method were irradiated with low energy ion beams (LEIB) viz. 100 keV H, 200 keV Ar and 350 keV N beams at different fluences and demonstrated for low energy ion dosimetric application. X-ray Diffraction and Transmission electron microscopy revealed the formation of highly crystalline cubic structured particles with size ∼45–50 nm. FTIR spectra of the CaF{sub 2}:Dy samples show changes of some bonds such as N–O asymmetric, C–F bonding and C–H aromatic contain stretching mode after LEIB irradiation. The thermoluminescence (TL) glow curve peaks were observed at 207 °C for Ar ion, at 203 °C for H ion and at 216 °C and 270 °C for N ion. It has been found that CaF{sub 2}:Dy nanophosphor shows a linear response with minimum fading for all the ion species. Computerized Glow Curve Deconvolution was performed for TL curve of high fluence ion irradiated nanophosphor to estimate the trapping parameters and the respective figure of merit (FOM) found to be very appropriate for all the nanophosphor. These results indicated that the CaF{sub 2}:Dy can be used as a low energy ion detector or dose.

A study of the effect of helium concentration and displacement damage on the microstructure of helium ion irradiated tungsten

Science.gov (United States)

Harrison, R. W.; Greaves, G.; Hinks, J. A.; Donnelly, S. E.

2017-11-01

Transmission electron microscopy (TEM) with in-situ He ion irradiation has been used to examine the damage microstructure of W when varying the helium concentration to displacement damage ratio, irradiation temperature and total dose. Irradiations employed 15, 60 or 85 keV He ions, at temperatures between 500 and 1000 °C up to doses of ∼3.0 DPA. Once nucleated and grown to an observable size in the TEM, bubble diameter as a function of irradiation dose did not measurably increase at irradiation temperatures of 500 °C between 1.0 and 3.0 DPA; this is attributed to the low mobility of vacancies and He/vacancy complexes at these temperatures. Bubble diameter increased slightly for irradiation temperatures of 750 °C and rapidly increased when irradiated at 1000 °C. Dislocation loops were observed at irradiation temperatures of 500 and 750 °C and no loops were observed at 1000 °C. Burgers vectors of the dislocations were determined to be b = ±½ type only and both vacancy and interstitial loops were observed. The proportion of interstitial loops increased with He-appm/DPA ratio and this is attributed to the concomitant increase in bubble areal density, which reduces the vacancy flux for both the growth of vacancy-type loops and the annihilation of interstitial clusters.

Formation of hexagonal silicon carbide by high energy ion beam irradiation on Si (1 0 0) substrate

International Nuclear Information System (INIS)

Bhuyan, H; Favre, M; Valderrama, E; Avaria, G; Chuaqui, H; Mitchell, I; Wyndham, E; Saavedra, R; Paulraj, M

2007-01-01

We report the investigation of high energy ion beam irradiation on Si (1 0 0) substrates at room temperature using a low energy plasma focus (PF) device operating in methane gas. The unexposed and ion exposed substrates were characterized by x-ray diffraction, scanning electron microscopy (SEM), photothermal beam deflection, energy-dispersive x-ray analysis and atomic force microscopy (AFM) and the results are reported. The interaction of the pulsed PF ion beams, with characteristic energy in the 60-450 keV range, with the Si surface, results in the formation of a surface layer of hexagonal silicon carbide. The SEM and AFM analyses indicate clear step bunching on the silicon carbide surface with an average step height of 50 nm and a terrace width of 800 nm

Ion beam irradiation as a tool to improve the ionic conductivity in solid polymer electrolyte systems

Energy Technology Data Exchange (ETDEWEB)

Manjunatha, H., E-mail: h-manjunath@blr.amrita.edu; Kumaraswamy, G. N. [Department of Physics, Amrita Vishwa Vidyapeetham, Bengaluru-560 035 (India); Damle, R. [Department of Physics, Bangalore University, Bengaluru-560 056 (India)

2016-05-06

Solid polymer electrolytes (SPEs) have potential applications in solid state electronic and energy devices. The optimum conductivity of SPEs required for such applications is about 10{sup −1} – 10{sup −3} Scm{sup −1}, which is hard to achieve in these systems. It is observed that ionic conductivity of SPEs continuously increase with increasing concentration of inorganic salt in the host polymer. However, there is a critical concentration of the salt beyond which the conductivity of SPEs decreases due to the formation of ion pairs. In the present study, solid polymer thin films based on poly (ethylene oxide) (PEO) complexed with NaBr salt with different concentrations have been prepared and the concentration at which ion pair formation occurs in PEO{sub x}NaBr is identified. The microstructure of the SPE with highest ionic conductivity is modified by irradiating it with low energy O{sup +1} ion (100 keV) of different fluencies. It is observed that the ionic conductivity of irradiated SPEs increases by one order in magnitude. The increase in ionic conductivity may be attributed to the enhanced segmental motion of the polymer chains due to radiation induced micro structural modification.

INTERBALL-Auroral observations of 0.1-12 keV ion gaps in the diffuse auroral zone

Directory of Open Access Journals (Sweden)

R. A. Kovrazhkin

1999-06-01

Full Text Available We examine ion flux dropouts detected by INTERBALL-Auroral upon traversal of the auroral zone at altitudes of \\sim13 000 up to 20 000 km. These dropouts which we refer to as "gaps", are frequently observed irrespectively of longitudinal sector and appear characteristic of INTERBALL-Auroral ion spectrograms. Whereas some of these gaps display a nearly monoenergetic character (~12 keV, others occur at energies of a few hundreds of eV up to several keV. INTERBALL-Auroral data exhibit the former monoenergetic gap variety essentially in the evening sector. As examined in previous studies, these gaps appear related to transition from particle orbits that are connected with the magnetotail plasma source to closed orbits encircling the Earth. The latter gap variety, which spreads over several hundreds of eV to a few keV is often observed in the dayside magnetosphere. It is argued that such gaps are due to magnetospheric residence times well above the ion lifetime. This interpretation is supported by numerical orbit calculations which reveal extremely large (up to several tens of hours times of flight in a limited energy range as a result of conflicting E × B and gradient-curvature drifts. The characteristic energies obtained numerically depend upon both longitude and latitude and are quite consistent with those measured in-situ.Key words. Magnetospheric physics (auroral phenomena; plasma convection

Overview of the US-Japan collaborative investigation on hydrogen isotope retention in neutron-irradiated and ion-damaged tungsten

Energy Technology Data Exchange (ETDEWEB)

Shimada, Masashi, E-mail: Masashi.Shimada@inl.gov [Fusion Safety Program, Idaho National Laboratory, Idaho Falls, ID (United States); Hatano, Y. [Hydrogen Isotope Research Center, University of Toyama, Toyama (Japan); Oya, Y. [Radioscience Research Laboratory, Faculty of Science, Shizuoka University, Shizuoka (Japan); Oda, T. [Department of Nuclear Engineering and Management, The University of Tokyo, Tokyo (Japan); Hara, M. [Hydrogen Isotope Research Center, University of Toyama, Toyama (Japan); Cao, G. [Department of Engineering Physics, University of Wisconsin-Madison, Madison, WI (United States); Kobayashi, M. [Radioscience Research Laboratory, Faculty of Science, Shizuoka University, Shizuoka (Japan); Sokolov, M. [Oak Ridge National Laboratory, Oak Ridge, TN (United States); Watanabe, H. [Research Institute for Applied Mechanics, Kyushu University, Fukuoka (Japan); Tyburska-Pueschel, B. [Department of Engineering Physics, University of Wisconsin-Madison, Madison, WI (United States); Institute fuer Plasmaphysik, EURATOM Association, Garching (Germany); Ueda, Y. [Graduate School of Engineering, Osaka University, Osaka (Japan); Calderoni, P. [Fusion Safety Program, Idaho National Laboratory, Idaho Falls, ID (United States); Okuno, K. [Radioscience Research Laboratory, Faculty of Science, Shizuoka University, Shizuoka (Japan)

2012-08-15

The effect of neutron-irradiation damage has been mainly simulated using high-energy ion bombardment. A recent MIT report (PSFC/RR-10-4, An assessment of the current data affecting tritium retention and its use to project towards T retention in ITER, Lipschultz et al., 2010) summarizes the observations from high-energy ion bombardment studies and illustrates the saturation trend in deuterium concentration due to damage from ion irradiation in tungsten and molybdenum above 1 displacement per atom (dpa). While this prior database of results is quite valuable for understanding the behavior of hydrogen isotopes in plasma facing components (PFCs), it does not encompass the full range of effects that must be considered in a practical fusion environment due to short penetration depth, damage gradient, high damage rate, and high primary knock-on atom (PKA) energy spectrum of the ion bombardment. In addition, neutrons change the elemental composition via transmutations, and create a high radiation environment inside PFCs, which influences the behavior of hydrogen isotope in PFCs, suggesting the utilization of fission reactors is necessary for neutron-irradiation. Under the framework of the US-Japan TITAN program, tungsten samples (99.99 at.% purity from A.L.M.T. Co.) were irradiated by fission neutrons in the High Flux Isotope Reactor (HFIR), Oak Ridge National Laboratory (ORNL), at 50 and 300 Degree-Sign C to 0.025, 0.3, and 2.4 dpa, and the investigation of deuterium retention in neutron-irradiated tungsten was performed in the Tritium Plasma Experiment (TPE), the unique high-flux linear plasma facility that can handle tritium, beryllium and activated materials. This paper reports the recent results from the comparison of ion-damaged tungsten via various ion species (2.8 MeV Fe{sup 2+}, 20 MeV W{sup 2+}, and 700 keV H{sup -}) with that from neutron-irradiated tungsten to identify the similarities and differences among them.

Thrombogenicity tests on ar-irradiated polycarbonate foils

Energy Technology Data Exchange (ETDEWEB)

Trindade, Gustavo F.; Rizzutto, Marcia A.; Silva, Tiago F.; Moro, Marcos V.; Added, Nemitala; Tabacniks, Manfredo H., E-mail: g.ferraz@usp.br [Universidade de Sao Paulo (USP), Sao Paulo, SP (Brazil). Inst. de Fisica; Delgado, Adriana O. [Universidade Federal de Sao Carlos (UFSCAR), Sorocaba, SP (Brazil); Cunha, Tatiana F. [Biosintesis P and D do Brasil, Sao Paulo, SP (Brazil); Higa, Olga Z. [Instituto de Pesquisas Energeticas e Nucleares (IPEN/CNEN-SP), Sao Paulo, SP (Brazil). Centro de Biotecnologia

2013-07-01

Understanding polymer surface properties is extremely important for the most wide range of their applications, from basic coating to the most complex composites and biomaterials. Low energy ion beam irradiation of polymer can improve such surface properties. By modifying its surface biocompatibility, polymers are excellent candidates for biomaterials, due to its malleability and low weight, when compared to metals. In this work, we irradiated 30-μm Bisphenol-A Polycarbonate foils with 23-keV Argon ion beam at six different doses. Aluminium foils were simultaneously irradiated in order to measure the doses by Rutherford Backscattering Spectroscopy. The surface modifications after the argon ion beam irradiation were analyzed by water contact angle measurements and atomic force microscopy. Platelet adhesion tests were used in order to investigate thrombogenicity, showing a growing tendency with the irradiated Argon dose. (author)

Thrombogenicity tests on ar-irradiated polycarbonate foils

International Nuclear Information System (INIS)

Trindade, Gustavo F.; Rizzutto, Marcia A.; Silva, Tiago F.; Moro, Marcos V.; Added, Nemitala; Tabacniks, Manfredo H.; Cunha, Tatiana F.; Higa, Olga Z.

2013-01-01

Understanding polymer surface properties is extremely important for the most wide range of their applications, from basic coating to the most complex composites and biomaterials. Low energy ion beam irradiation of polymer can improve such surface properties. By modifying its surface biocompatibility, polymers are excellent candidates for biomaterials, due to its malleability and low weight, when compared to metals. In this work, we irradiated 30-μm Bisphenol-A Polycarbonate foils with 23-keV Argon ion beam at six different doses. Aluminium foils were simultaneously irradiated in order to measure the doses by Rutherford Backscattering Spectroscopy. The surface modifications after the argon ion beam irradiation were analyzed by water contact angle measurements and atomic force microscopy. Platelet adhesion tests were used in order to investigate thrombogenicity, showing a growing tendency with the irradiated Argon dose. (author)

Annealing of defects in indium antimonide after ion bombardment

International Nuclear Information System (INIS)

Bogatyrev, V.A.; Kachurin, G.A.

1977-01-01

Indium antimonide electric properties are investigated after ion bombardment of different mass (with energy of 60 and 300 keV) and isochrone annealing in the 20-450 deg C temperature range. It is shown that 100-150 deg C n- type stable layers are formed after proton irradiation at room temperature only. Indium antimonide exposure by average mass ions under the same conditions and also by helium ions of 300 keV energy brings to p-type layer formation with high hole concentration. Subsequent heating at the temperature over 150 deg C results in electron conductivity of irradiated layers. Electron volume density and mobility efficiency reaches 10 18 cm -3 and 10 4 cm 2 /Vs respectively. N-type formed layers are stable up to 350 deg C allowing its usage for n-p transition formation admitting thermal treatment. Analysis is given of defect behaviour peculiarities depending upon the irradiation and annealing conditions. Hole conductivity in irradiated indium antimonide is supposed to be stipulated by regions of disorder, while electron conductivity - by relatively simpler disorders

Ion-beam mixing in silicon and germanium at low temperatures

International Nuclear Information System (INIS)

Clark, G.J.; Marwick, A.D.; Poker, D.B.

1982-01-01

Ion-beam mixing of thin marker layers in amorphous silicon and germanium was studied using irradiations with Xe ions at temperatures of 34k and 77k. The marker species, ion energies and doses were: in silicon, markers of Ge and Pt irradiated with 200-keV Xe up to 2.7x10 16 ions cm -2 ; and in germanium, markers of Al and Si bombarded with 295-keV Xe up to 1.63x10 16 ions cm -2 . In silicon, Pt markers were found to broaden at about the same rate at 34k and 77k; and the rate of broadening was similar to that found by other workers when expressed as an efficiency of mixing, i.e., when dependence on ion dose and deposited energy was factored out. However, a Ge marker irradiated at 34k did not broaden from its original thickness. In germanium, markers of both Al and Si were mixed by irradiation at 34k, but at 77k only the Al marker broadened; the Si marker did not. The broadening of the markers is ascribed to ballistic mixing, while the cases where no broadening occurred are explicable if diffusion by a defect mechanism transported displaced marker atoms back to traps near their original sites

Degradation of PET, PEEK and PI induced by irradiation with 150 keV Ar+ and 1.76 MeV He+ ions

Czech Academy of Sciences Publication Activity Database

Macková, Anna; Havránek, Vladimír; Švorčík, V.; Suzuki, T.; Djourelov, N.

2005-01-01

Roč. 240, 1/2 (2005), s. 245-249 ISSN 0168-583X R&D Projects: GA MŠk(CZ) OC 527.100 Institutional research plan: CEZ:AV0Z10480505 Keywords : irradiated polymers * ion beam modification * ERDA Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.181, year: 2005

Energy Reflection Coefficients for 5-10 keV He Ions Incident on Au, Ag, and Cu

DEFF Research Database (Denmark)

Schou, Jørgen; Sørensen, H.; Littmark, U.

1978-01-01

The calorimetric deuterium-film method was used for measurements of the energy reflection coefficient γ for normal incidence of 5-10 keV He ions on Cu, Ag and Au. A theoretical calculation of γ by means of transport theory gives fair agreement with the experimental results. The experimental data...... the experimental and theoretical results for the He ions are in acceptable agreement with other experimental and theoretical results. For He ions, the experimental γ-values are 20-30% above the values for hydrogen ions for the same value of ε...

High power pulse electron beam modification and ion implantation of Hg{sub 1-x}Cd{sub x}Te crystals

Energy Technology Data Exchange (ETDEWEB)

Vojtsekhovskij, A V; Remnev, G E [Tomsk Polytechnic Univ. (Russian Federation). Nuclear Physics Inst.; Opekunov, M S; Kokhanenko, A P; Korotaev, A G; Denisov, Yu A; Oucherenko, D A [Tomsk State Univ. (Russian Federation). Dept. of Radiophysics

1997-12-31

Hg{sub 1-x}Cd{sub x}Te (MCT) samples (x = 0.21 - 0.22) were irradiated by pulse electron beams at doses of 10{sup 13} to 10{sup 17} cm{sup -2}. The electron beams possessed the following parameters: 500 keV electron energy (30-40 A/cm{sup 2} electron current density, 60-80 ns current pulse); 200 keV electron energy (8- 10 A/cm{sup 2} electron current density, 100-200 ns current pulse). The electric conductivity and recombination of modified samples were investigated by the Hall effect and photoconductivity methods. For the 200 keV electron energy beam irradiation, the n-type surface regions were obtained under threshold mechanisms of donor defect generation. For the 500 keV electron energy beam irradiation, the maximum value of charge carrier lifetimes occur in the p- to n-type conductivity conversion range for the initial p-type crystals due to the conductivity compensation. MCT samples (x = 0.21 - 0.22) were implanted with Al ions at doses of 10{sup 12}-10{sup 16} cm{sup -2}. The ion beams possessed the following parameters: (1-10) A/cm{sup 2} ion current density, (100-200) ns current pulse; (150-450) keV Al ion (Al{sup +},Al{sup ++}, Al{sup +++}). The ion distribution and doping profiles were investigated by PIGE and Hall effect methods. Comparison between MCT samples after power pulse ion implantation and after standard ion implantation demonstrates differences in ion distribution, doping profiles and defect formation radiation mechanisms. (author). 3 figs., 8 refs.

Dense ion clouds of 0.1 − 2 keV ions inside the CPS-region observed by Astrid-2

Directory of Open Access Journals (Sweden)

O. Norberg

Full Text Available Data from the Astrid-2 satellite taken between April and July 1999 show several examples of dense ion clouds in the 0.1–2 keV energy range inside the inner mag-netosphere, both in the northern and southern hemispheres. These inner magnetospheric ion clouds are found predomi-nantly in the early morning sector, suggesting that they could have originated from substorm-related ion injections on the night side. However, their location and density show no cor-relation with Kp, and their energy-latitude dispersion is not easily reproduced by a simple particle drift model. There-fore, these ion clouds are not necessarily caused by substorm-related ion injections. Alternative explanations for the ion clouds are the direct solar wind injections and up-welling ions from the other hemisphere. These explanations do not, however, account for all of the observations.Key words. Magnetospheric physics (energetic particles, trapped; magnetospheric configuration and dynamics; storm and substorms

Unusual surface and edge morphologies, sp2 to sp3 hybridized transformation and electronic damage after Ar+ ion irradiation of few-layer graphene surfaces.

Science.gov (United States)

Al-Harthi, Salim Hamood; Elzain, Mohammed; Al-Barwani, Muataz; Kora'a, Amal; Hysen, Thomas; Myint, Myo Tay Zar; Anantharaman, Maliemadom Ramaswamy

2012-08-19

Roughness and defects induced on few-layer graphene (FLG) irradiated by Ar+ ions at different energies were investigated using X-ray photoemission spectroscopy (XPS) and atomic force microscopy techniques. The results provide direct experimental evidence of ripple formation, sp2 to sp3 hybridized carbon transformation, electronic damage, Ar+ implantation, unusual defects and edge reconstructions in FLG, which depend on the irradiation energy. In addition, shadowing effects similar to those found in oblique-angle growth of thin films were seen. Reliable quantification of the transition from the sp2-bonding to sp3-hybridized state as a result of Ar+ ion irradiation is achieved from the deconvolution of the XPS C (1s) peak. Although the ion irradiation effect is demonstrated through the shape of the derivative of the Auger transition C KVV spectra, we show that the D parameter values obtained from these spectra which are normally used in the literature fail to account for the sp2 to sp3 hybridization transition. In contrast to what is known, it is revealed that using ion irradiation at large FLG sample tilt angles can lead to edge reconstructions. Furthermore, FLG irradiation by low energy of 0.25 keV can be a plausible way of peeling graphene layers without the need of Joule heating reported previously.

Effect of heavy ion irradiation on C 60

Science.gov (United States)

Lotha, S.; Ingale, A.; Avasthi, D. K.; Mittal, V. K.; Mishra, S.; Rustagi, K. C.; Gupta, A.; Kulkarni, V. N.; Khathing, D. T.

1999-06-01

Thin films of C 60 were subjected to swift heavy ion irradiation spanning the region from 2 to 11 keV/nm of electronic excitation. Studies of the irradiated films by Raman spectroscopy indicated polymerization and damage of the film with an ion fluence. The ion track radii are estimated for various ions using the Raman data. Photoluminescence spectroscopy of the irradiated film indicated a decrease in the C 60 phase with a dose, and an increase in the intensity at the 590 nm wavelength, which is attributed to an increase in the oxygen content.

The accumulation of disorder, subject to saturation and sputter limitation, in ion irradiated solids

International Nuclear Information System (INIS)

Carter, G.; Webb, R.; Collins, R.

1978-01-01

The depth distribution of disorder and the depth integrated disorder produced by ion irradiation of solids is analysed theoretically as a function of increasing ion fluence when disorder saturation processes operate at all depths and the solid surface is continuously uniformly eroded by sputtering. The resulting defining equations are evaluated numerically for a Gaussian approximation to the disorder depth function with parameters appropriate to low, equal and high projectile:substrate mass ratio conditions, for several values of sputtering coefficient and effective atom displacement energy. It is shown that the form, if not the magnitude, of the integrated disorder/projectile fluence function is only weakly dependent upon these parameters. More meaningful comparison with depth resolved disorder functions is, however, possible and such a comparison is made for 100 keV Sb projectiles on a Si substrate. (author)

The martensitic transformation of Ti–Ni shape memory thin films under proton irradiation

International Nuclear Information System (INIS)

Gao, Z.Y.; Wang, H.Z.; Zhu, Y.Y.; Meng, X.L.; Cai, W.

2015-01-01

The martensitic transformation behavior of a Ti–Ni alloy irradiated by proton with different doses has been investigated. It is found that the samples irradiated by 150 keV protons have a two-step phase transformation during heating and only one-step transformation during cooling. The exothermic peak at higher temperature disappears during the following thermal cycling. A model based on the stress-assisted martensitic transformation was established by the Transport of Ions in Matter (TRIM) calculations in order to explain the transformation behavior. - Highlights: • Martensitic transformation behavior of TiNi alloy under proton irradiation • Two-step transformation appears upon heating for a sample irradiated at 150 keV. • One-step transformation appears upon cooling for a sample irradiated at 150 keV. • In the following thermal cycling, the higher temperature exothermic peak vanishes

Comparison of secondary ion emission induced in silicon oxide by MeV and KeV ion bombardment

International Nuclear Information System (INIS)

Allali, H.; Nsouli, B.; Thomas, J.P.; Szymczak, W.; Wittmaack, K.

1993-09-01

The surface and near-surface composition of SiO 2 layers, has been investigated by negative secondary ion emission mass spectrometry (SIMS) using MeV and KeV ion bombardment in combination with time-of-flight (TOF) mass analysis. The spectra recorded in the mass range 0-100 u are dominated by surface impurities, notably hydrocarbons and silicon polyanions incorporating H and OH entities. The characteristic (fragmentation) patterns are quite different for light and high-velocity ion impact. In high-velocity TOF-SIMS analysis of P-doped layers, prepared by chemical vapour deposition (CVD), the mass lines at 63 and 79 u are very prominent and appear to correlate with the phosphorus concentration (PO 2 and PO 3 , respectively). It is shown, however, that for unambiguous P analysis one has to use dynamic SIMS or high mass resolution. (author) 11 refs., 5 figs

In situ transmission electron microscopy study of ion-irradiated copper: comparison of the temperature dependence of cascade collapse in fcc- and bcc-metals

International Nuclear Information System (INIS)

Daulton, T.L.; Kirk, M.A.; Rehn, L.E.

2000-01-01

The kinetics which drive cascade formation and subsequent collapse into point-defect clusters are investigated by analyzing the microstructure produced in situ by low fluence 100 keV Kr ion irradiations of fcc-Cu over a wide temperature range (18-873 K). The yield of collapsed point-defect clusters is demonstrated unequivocally to be temperature dependent, remaining approximately constant up to lattice temperatures of 573 K and then abruptly decreasing with increasing temperature. This drop in yield is not caused by defect loss during or following ion irradiation. In addition, this temperature dependence can be explained by a thermal spike effect. These in situ yield measurements are compared to previous ex situ yield measurements in fcc-Ni and bcc-Mo

Colloidal assemblies modified by ion irradiation

OpenAIRE

Snoeks, E.; Blaaderen, A. van; Dillen, T. van; Kats, C.M. van; Velikov, K.P.; Brongersma, M.L.; Polman, A.

2001-01-01

Spherical SiO2 and ZnS colloidal particles show a dramatic anisotropic plastic deformation under 4 MeV Xe ion irradiation, that changes their shape into oblate into oblate ellipsional, with an aspect ratio that can be precisely controlled by the ion fluence. The 290 nm and 1.1 um diameter colloids were deposited on a Si substrate and irradiated at 90 K, using fluences in the range 3*10^(13)-8*10^(14) cm^(-2). The transverse particle diameter shows a linear increase with ion fluence, while the...

Anti-biofilm activity of Fe heavy ion irradiated polycarbonate

Energy Technology Data Exchange (ETDEWEB)

Joshi, R.P. [Department of Physics, Savitribai Phule Pune University, Pune 411007 (India); Hareesh, K., E-mail: appi.2907@gmail.com [Department of Physics, Savitribai Phule Pune University, Pune 411007 (India); Bankar, A. [Department of Microbiology, Waghire College, Pune 412301 (India); Sanjeev, Ganesh [Microtron Centre, Department of Studies in Physics, Mangalore University, Mangalore 574166 (India); Asokan, K.; Kanjilal, D. [Inter University Accelerator Centre, Arun Asaf Ali Marg, New Delhi 110067 (India); Dahiwale, S.S.; Bhoraskar, V.N. [Department of Physics, Savitribai Phule Pune University, Pune 411007 (India); Dhole, S.D., E-mail: sanjay@physics.unipune.ac.in [Department of Physics, Savitribai Phule Pune University, Pune 411007 (India)

2016-10-01

Highlights: • PC films were irradiated by 60 and 120 MeV Fe ions. • Irradiated PC films showed changes in its physical and chemical properties. • Irradiated PC also showed more anti-biofilm activity compared to pristine PC. - Abstract: Polycarbonate (PC) polymers were investigated before and after high energy heavy ion irradiation for anti-bacterial properties. These PC films were irradiated by Fe heavy ions with two energies, viz, 60 and 120 MeV, at different fluences in the range from 1 × 10{sup 11} ions/cm{sup 2} to 1 × 10{sup 13} ions/cm{sup 2}. UV-Visible spectroscopic results showed optical band gap decreased with increase in ion fluences due to chain scission mainly at carbonyl group of PC which is also corroborated by Fourier transform infrared spectroscopic results. X-ray diffractogram results showed decrease in crystallinity of PC after irradiation which leads to decrease in molecular weight. This is confirmed by rheological studies and also by differential scanning calorimetric results. The irradiated PC samples showed modification in their surfaces prevents biofilm formation of human pathogen, Salmonella typhi.

CSR: a new tool for storage and cooling of keV ion beams

Energy Technology Data Exchange (ETDEWEB)

Froese, Michael; Blaum, Klaus; Crespo Lopez-Urrutia, Jose; Fellenberger, Florian; Grieser, Manfred; Kaiser, Dirk; Lange, Michael; Laux, Felix; Menk, Sebastian; Orlov, Dmitry A.; Repnow, Roland; Schroeter, Claus D.; Schwalm, Dirk; Sieber, Thomas; Ullrich, Joachim; Varju, Jozef; Hahn, Robert von; Wolf, Andreas [Max-Planck-Institut fuer Kernphysik, Heidelberg (Germany); Heber, Oded; Rappaport, Michael; Toker, Jonathan; Zajfman, Daniel [Weizman Institute of Science, Rehovot (Israel)

2009-07-01

An electrostatic Cryogenic Storage Ring (CSR) is currently being built in Heidelberg, Germany. The current status and final design of this ring, with a focus on the optimized 2 K chamber cooling, precision chamber suspension, and pumping down to extremely low pressures via cryogenic vacuum chambers will be presented. This ring will allow long storage times of highly charged ion and polyatomic molecular beams with energies in the range of keV per charge-state. Combining the long storage times with vacuum chamber temperatures approaching 2 K, infrared-active molecular ions will be radiatively cooled to their rotational ground states. Many aspects of this concept were experimentally tested with a cryogenic trap for fast ion beams (CTF), which has already demonstrated the storage of fast ion beams in a large cryogenic device. An upcoming test will investigate the effect of pre-baking the cryogenic vacuum chambers to 600 K on the cryogenic vacuum and the ion beam storage.

Heavy-ion irradiation induced diamond formation in carbonaceous materials

International Nuclear Information System (INIS)

Daulton, T. L.

1999-01-01

The basic mechanisms of metastable phase formation produced under highly non-equilibrium thermodynamic conditions within high-energy particle tracks are investigated. In particular, the possible formation of diamond by heavy-ion irradiation of graphite at ambient temperature is examined. This work was motivated, in part, by earlier studies which discovered nanometer-grain polycrystalline diamond aggregates of submicron-size in uranium-rich carbonaceous mineral assemblages of Precambrian age. It was proposed that the radioactive decay of uranium formed diamond in the fission particle tracks produced in the carbonaceous minerals. To test the hypothesis that nanodiamonds can form by ion irradiation, fine-grain polycrystalline graphite sheets were irradiated with 400 MeV Kr ions. The ion irradiated graphite (and unirradiated graphite control) were then subjected to acid dissolution treatments to remove the graphite and isolate any diamonds that were produced. The acid residues were then characterized by analytical and high-resolution transmission electron microscopy. The acid residues of the ion-irradiated graphite were found to contain ppm concentrations of nanodiamonds, suggesting that ion irradiation of bulk graphite at ambient temperature can produce diamond

Irradiation of carbon nanotubes with carbon projectiles: A molecular dynamics study

Energy Technology Data Exchange (ETDEWEB)

Denton, Cristian D. [Departamento de Fisica Aplicada, Universidad de Alicante, 03080 Alicante (Spain); Heredia-Avalos, Santiago; Moreno-Marin, Juan Carlos [Departamento de Fisica, Ingenieria de Sistemas y Teoria de la Senal, Universidad de Alicante, 03080 Alicante (Spain)

2013-04-15

The irradiation of carbon based nanostructures with ions and electrons has been shown to be an appropriate tool to tailor their properties. The defects induced in the nanostructures during irradiation are able to modify their mechanical and electronic properties. Here we simulate the irradiation of carbon nanotubes with carbon ions using a molecular dynamics code. We use the Tersoff potential joined smoothly to the Universal Ziegler-Biersack-Littmark potential at short distances. We study the number of defects produced after irradiation with a single carbon ion finding a saturation with its energy at {proportional_to} 3 keV. We observe, after continuum irradiation with low energy ions, the formation of bumps in the irradiated region. For larger energy ions we find that the diameter of the nanotube shrinks as shown in previous works. (copyright 2013 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Elaboration by ion implantation of cobalt nano-particles in silica layers and modifications of their properties by electron and swift heavy ion irradiations; Elaboration par implantation ionique de nanoparticules de cobalt dans la silice et modifications de leurs proprietes sous irradiation d'electrons et d'ions de haute energie

Energy Technology Data Exchange (ETDEWEB)

D' Orleans, C

2003-07-15

This work aims to investigate the capability of ion irradiations to elaborate magnetic nano-particles in silica layers, and to modify their properties. Co{sup +} ions have been implanted at 160 keV at fluences of 2.10{sup 16}, 5.10{sup 16} and 10{sup 17} at/cm{sup 2}, and at temperatures of 77, 295 and 873 K. The dependence of the particle size on the implantation fluence, and more significantly on the implantation temperature has been shown. TEM (transmission electronic microscopy) observations have shown a mean diameter varying from 1 nm for implantations at 2.10{sup 16} Co{sup +}/cm{sup 2} at 77 K, to 9.7 nm at 10{sup 17} Co{sup +}/cm{sup 2} at 873 K. For high temperature implantations, two regions of particles appear. Simulations based on a kinetic 3-dimensional lattice Monte Carlo method reproduce quantitatively the features observed for implantations. Thermal treatments induce the ripening of the particles. Electron irradiations at 873 K induce an important increase in mean particle sizes. Swift heavy ion irradiations also induce the ripening of the particles for low fluences, and an elongation of the particles in the incident beam direction for high fluences, resulting in a magnetic anisotropy. Mechanisms invoked in thermal spike model could also explain this anisotropic growth. (author)

Effect of solute atoms on swelling in Ni alloys and pure Ni under He + ion irradiation

Science.gov (United States)

Wakai, E.; Ezawa, T.; Imamura, J.; Takenaka, T.; Tanabe, T.; Oshima, R.

2002-12-01

The effects of solute atoms on microstructural evolutions have been investigated using Ni alloys under 25 keV He + irradiation at 500 °C. The specimens used were pure Ni, Ni-Si, Ni-Co, Ni-Cu, Ni-Mn and Ni-Pd alloys with different volume size factors. The high number densities of dislocation loops about 1.5×10 22 m -3 were formed in the specimens irradiated to 1×10 19 ions/m 2, and they were approximately equivalent, except for Ni-Si. The mean size of loops tended to increase with the volume size factor of solute atoms. In a dose of 4×10 20 ions/m 2, the swelling was changed from 0.2% to 4.5%, depending on the volume size factors. The number densities of bubbles tended to increase with the absolute values of the volume size factor, and the swelling increased with the volume size factors. This suggests that the mobility of helium and vacancy atoms may be influenced by the interaction of solute atoms with them.

Beam position monitor R&D for keV ion beams

CERN Document Server

Naveed, S; Nosych, A; Søby,L

2013-01-01

Beams of cooled antiprotons at keV energies shall be provided by the Ultra-low energy Storage Ring (USR) at the Facility for Low energy Antiproton and Ion Research (FLAIR) and the Extra Low ENergy Antiproton ring (ELENA) at CERN's Antiproton Decelerator (AD) facility. Both storage rings put challenging demands on the beam position monitoring (BPM) system as their capacitive pick-ups should be capable of determining the beam position of beams at low intensities and low velocities, close to the noise level of state-of-the-art electronics. In this contribution we describe the design and anticipated performance of BPMs for low-energy ion beams with a focus on the ELENA orbit measurement systems. We also present the particular challenges encountered in the numerical simulation of pickup response at very low beta values. Finally, we provide an outlook on how the implementation of faster algorithms for the simulation of BPM characteristics could potentially help speed up such studies considerably.

Direct determination of a radiation-damage profile with atomic resolution in ion-irradiated platinum. MSC report No. 5030

International Nuclear Information System (INIS)

Pramanik, D.; Seidman, D.N.

1983-05-01

The field-ion microscope (FIM) technique has been employed to determine directly a radiation damage profile, with atomic resolution, in a platinum specimen which had been irradiated at 80 0 K with 20-keV Kr + ions to a fluence of 5 x 10 12 cm - 2 . It is shown that the microscopic spatial-vacancy distribution (radiation-damage profile) is directly related to the elastically-deposited-energy profile. The experimentally constructed radiation-damage profile is compared with a theoretical damage profile - calculated employing the TRIM Monte Carlo code - and excellent agreement is obtained between the two, thus demonstrating that it is possible to go directly from a microscopic spatial distribution of vacancies to a continuous radiation-damage profile

Heavy ion irradiation effects of polymer film on absorption of light

Energy Technology Data Exchange (ETDEWEB)

Kasai, Noboru; Seguchi, Tadao [Japan Atomic Energy Research Inst., Takasaki, Gunma (Japan). Takasaki Radiation Chemistry Research Establishment; Arakawa, Tetsuhito

1997-03-01

Ion irradiation effects on the absorption of light for three types of polymer films; polyethylene-terephthalate (PET), polyethylene-naphthalate (PEN), and polyether-ether-ketone (PEEK) were investigated by irradiation of heavy ions with Ni{sup 4+}(15MeV), O{sup 6+}(160MeV), and Ar{sup 8+}(175MeV), and compared with electron beams(EB) irradiation. The change of absorption at 400nm by a photometer was almost proportional to total dose for ions and EB. The absorption per absorbed dose was much high in Ni{sup 4+}, but rather small in O{sup 6+} and Ar{sup 8+} irradiation, and the absorption by EB irradiation was accelerated by the temperature of polymer film during irradiation. The beam heating of materials during ion irradiation was assumed, especially for Ni ion irradiation. The heavy ion irradiation effect of polymers was thought to be much affected by the ion beam heating than the linear energy transfer(LET) of radiation source. (author)

Evolution of nanodot morphology on polycarbonate (PC) surfaces by 40 keV Ar"+

International Nuclear Information System (INIS)

Goyal, Meetika; Chawla, Mahak; Gupta, Divya; Shekhawat, Nidhi; Sharma, Annu; Aggarwal, Sanjeev

2016-01-01

In the present paper we have discussed the effect of 40 keV Ar"+ ions irradiation on nanoscale surface morphology of Polycarbonate (PC) substrate. Specimens were sputtered at off normal incidences of 30°, 40° and 50° with the fluence of 1 × 10"1"6 Ar"+cm"−"2. The topographical behaviour of specimens was studied by using Atomic Force Microscopy (AFM) technique. AFM study demonstrates the evolution of nano dot morphology on PC specimens on irradiating with 1 × 10"1"6 Ar"+cm"−"2. Average size of dots varied from 37-95 nm in this specified range of incidence while density of dots varied from 0.17-3.0 × 107 dotscm"−"2. Such variations in morphological features have been supported by estimation of ion range and sputtering yield through SRIM simulations.

Effect of swift heavy ion irradiation on ethylene–chlorotrifluoroethylene copolymer

International Nuclear Information System (INIS)

Singh, Lakhwant; Devgan, Kusum; Samra, Kawaljeet Singh

2012-01-01

The swift heavy irradiation induced changes taking place in ethylene–chlorotrifluoroethylene (E–CTFE) copolymer films were investigated in correlation with the applied doses. Samples were irradiated in vacuum at room temperature by lithium (50 MeV), carbon (85 MeV), nickel (120 MeV) and silver (120 MeV) ions with the fluence in the range of 1×10 11 –3×10 12 ions cm −2 . Structural and thermal properties of the irradiated as well as pristine E–CTFE films were studied using FTIR, UV–visible, TGA, DSC and XRD techniques. Swift heavy ion irradiation was found to induce changes in E–CTFE depending upon the applied doses. - Highlights: ► Effect of swift heavy ion irradiation on E–CTFE films has been studied. ► Different structural changes in the original structure of E–CTFE are observed after irradiation with different ions. ► Swift heavy ion irradiation has made E–CTFE more prone to thermal degradation.

Hydrogen irradiation on TiO{sub 2} nano-thin films

Energy Technology Data Exchange (ETDEWEB)

Heidari, Sh.; Mohammadizadeh, M.R. [University of Tehran, Superconductivity Research Laboratory (SRL), Department of Physics, Tehran (Iran, Islamic Republic of); Mahjour-Shafiei, M. [University of Tehran, Department of Physics, Tehran (Iran, Islamic Republic of); Larijani, M.M.; Malek, M. [Science and Technology Research Institute, Agricultural, Medical and Industrial Research School, Karaj (Iran, Islamic Republic of)

2015-10-15

Titanium dioxide thin films were coated on soda-lime glass substrates using spray pyrolysis method with a thickness of 152 ± 10 nm. The films were irradiated with hydrogen ions at room temperature at various beam energies and fluences. Optimized incident beam energy and beam fluence were obtained to improve photocatalytic and hydrophilicity properties of TiO{sub 2} thin films by narrowing the band gap. Samples were characterized by scanning electron microscopy to study the surface morphology and by UV-Vis absorption spectroscopy to measure the band gap. The optical band gap of H-doped anatase TiO{sub 2} thin films irradiated with hydrogen beam with energies of 2 and 4 keV and a fluence of 10{sup 15} ions/cm{sup 2} was narrowed from 3.34 eV (before irradiation) to 3.04 and 2.92 eV (after irradiation), respectively. The irradiated sample with energy of 4 keV with a fluence of 10{sup 15} ions/cm{sup 2} has the best improvement. This is attributed to the contraction of the band gap and to the increase in surface active site. Furthermore, it was observed that photocatalytic and hydrophilicity properties of this sample were improved, as well. (orig.)

Genetic effects of heavy ion irradiation in maize and soybean

International Nuclear Information System (INIS)

Yatou, Osamu; Amano, Etsuo; Takahashi, Tan.

1992-01-01

Somatic mutation on leaves of maize and soybean were observed to investigate genetic effects of heavy ion irradiation. Maize seeds were irradiated with N, Fe and U ions and soybean seeds were irradiated with N ions. This is a preliminary report of the experiment, 1) to examine the mutagenic effects of the heavy ion irradiation, and 2) to evaluate the genetic effects of cosmic ray exposure in a space ship outside the earth. (author)

In-situ high temperature irradiation setup for temperature dependent structural studies of materials under swift heavy ion irradiation

International Nuclear Information System (INIS)

Kulriya, P.K.; Kumari, Renu; Kumar, Rajesh; Grover, V.; Shukla, R.; Tyagi, A.K.; Avasthi, D.K.

2015-01-01

An in-situ high temperature (1000 K) setup is designed and installed in the materials science beam line of superconducting linear accelerator at the Inter-University Accelerator Centre (IUAC) for temperature dependent ion irradiation studies on the materials exposed with swift heavy ion (SHI) irradiation. The Gd 2 Ti 2 O 7 pyrochlore is irradiated using 120 MeV Au ion at 1000 K using the high temperature irradiation facility and characterized by ex-situ X-ray diffraction (XRD). Another set of Gd 2 Ti 2 O 7 samples are irradiated with the same ion beam parameter at 300 K and simultaneously characterized using in-situ XRD available in same beam line. The XRD studies along with the Raman spectroscopic investigations reveal that the structural modification induced by the ion irradiation is strongly dependent on the temperature of the sample. The Gd 2 Ti 2 O 7 is readily amorphized at an ion fluence 6 × 10 12 ions/cm 2 on irradiation at 300 K, whereas it is transformed to a radiation-resistant anion-deficient fluorite structure on high temperature irradiation, that amorphized at ion fluence higher than 1 × 10 13 ions/cm 2 . The temperature dependent ion irradiation studies showed that the ion fluence required to cause amorphization at 1000 K irradiation is significantly higher than that required at room temperature irradiation. In addition to testing the efficiency of the in-situ high temperature irradiation facility, the present study establishes that the radiation stability of the pyrochlore is enhanced at higher temperatures

Magnetic field design for a Penning ion source for a 200 keV electrostatic accelerator

Energy Technology Data Exchange (ETDEWEB)

Fathi, A., E-mail: Atefeh.Fathi115@gmail.com [Radiation Applications Department, Shahid Beheshti University, G. C., Tehran (Iran, Islamic Republic of); Feghhi, S.A.H.; Sadati, S.M. [Radiation Applications Department, Shahid Beheshti University, G. C., Tehran (Iran, Islamic Republic of); Ebrahimibasabi, E. [Department of Physics, Shahrood University of Technology, 3619995161, Shahrood (Iran, Islamic Republic of)

2017-04-01

In this study, the structure of magnetic field for a Penning ion source has been designed and constructed with the use of permanent magnets. The ion source has been designed and constructed for a 200 keV electrostatic accelerator. With using CST Studio Suite, the magnetic field profile inside the ion source was simulated and an appropriate magnetic system was designed to improve particle confinement. Designed system consists of two ring magnets with 9 mm distance from each other around the anode. The ion source was constructed and the cylindrical magnet and designed magnetic system were tested on the ion source. The results showed that the ignition voltage for ion source with the designed magnetic system is almost 300 V lower than the ion source with the cylindrical magnet. Better particle confinement causes lower voltage discharge to occur.

Radiation defect distribution in silicon irradiated with 600 keV electrons

International Nuclear Information System (INIS)

Hazdra, P.; Dorschner, H.

2003-01-01

Low-doped n-type float zone silicon was irradiated with 600 keV electrons to fluences from 2x10 13 to 1x10 15 cm -2 . Radiation defects, their introduction rates and full-depth profiles were measured by two complementary methods - the capacitance deep level spectroscopy and the high-voltage current transient spectroscopy. Results show that, in the vicinity of the anode junction, the profile of vacancy-related defect centers is strongly influenced by electric field and an excessive generation of vacancies. In the bulk, the slope of the profile can be derived from the distribution of absorbed dose taking into the account the threshold energy necessary for Frenkel pair formation and the dependency of the defect introduction rate on electron energy

Freely-migrating-defect production during irradiation at elevated temperatures

Science.gov (United States)

Hashimoto, T.; Rehn, L. E.; Okamoto, P. R.

1988-12-01

Radiation-induced segregation in a Cu-1 at. % Au alloy was investigated using in situ Rutherford backscattering spectrometry. The amount of Au atom depletion in the near surface region was measured as a function of dose during irradiation at 350 °C with four ions of substantially different masses. Relative efficiencies for producing freely migrating defects were evaluated for 1.8-MeV 1H, 4He, 20Ne, and 84Kr ions by determining beam current densities that gave similar radiation-induced segregation rates. Irradiations with primary knock-on atom median energies of 1.7, 13, and 79 keV yielded relative efficiencies of 53, 7, and 6 %, respectively, compared to the irradiation with a 0.83-keV median energy. Despite quite different defect and host alloy properties, the relative efficiencies for producing freely migrating defects determined in Cu-Au are remarkably similar to those found previously in Ni-Si alloys. Hence, the reported efficiencies appear to offer a reliable basis for making quantitative correlations of microstructural changes induced in different alloy systems by a wide variety of irradiation particles.

Investigations of electrical and optical properties of low energy ion irradiated α-Fe{sub 2}O{sub 3} (hematite) thin films

Energy Technology Data Exchange (ETDEWEB)

Sulania, Indra; Kanjilal, D. [Inter University Accelerator Centre, P O Box-10502, Aruna Asaf Ali Marg, New Delhi-110067 (India); Kaswan, Jyoti; Attatappa, Vinesh [Department of physics, Amity University, Manesar-122 413, Haryana (India); Karn, Ranjeet Kumar [Jamshedpur Cooperative College, Circuit House Area, Jamshedpur-831001, Jharkhand (India); Agarwal, D. C. [Sant Longowal Institute of Engineering and Technology, Sangrur, Longowal-148106, Punjab (India)

2016-05-23

Thin films of α-Fe{sub 2}O{sub 3} of thickness ~100 nm were synthesized on Si (100) and glass substrates by thermal evaporation method. The as deposited films were annealed at 400°C in Oxygen environment for 2 hours to obtain the desired phase. The annealed films found to be polycrystalline in nature with an average crystallite size ~7 nm. The direct and indirect band gaps were found to be 2.2 and 1.5 eV respectively for annealed films using. I-V characteristics and Hall-effect measurement of annealed films showed n-type semi conducting behavior. Further, films were irradiated with nitrogen ions of energy 10 keV at an ion fluence of 1×10{sup 18} ions/cm{sup 2}. After irradiation, a decrease in both direct as well as indirect band gap was observed, from 2.2 to 2.1 eV and 1.5 to 1.3 eV respectively. I-V characteristic and Hall-Effect measurement confirmed change in conductivity of the films from n-type to p-type after irradiation, which can have possible applications in semi conducting device fabrications.

Amino acids grafting of Ar+ ions modified PE

International Nuclear Information System (INIS)

Svorcik, V.; Hnatowicz, V.; Stopka, P.; Bacakova, L.; Heitz, J.; Oechsner, R.; Ryssel, H.

2001-01-01

Polyethylene (PE) was irradiated with 63 keV Ar + ions to the fluences from 1x10 12 to 3x10 15 cm -2 and then grafted at room temperature from water solution with amino acids (alanine, leucine). Using various spectroscopic techniques (UV-VIS, FTIR, RBS and EPR) it was shown that the amino acids penetrate into PE where they are eventually captured either on double bonds or on free radicals created by the ion irradiation. Grafting with amino acids in the whole specimen layer modified by irradiation is observed. The ion-beam-modified and amino-acid grafted PE is supposed to exhibit increased biocompatibility. (author)

Energy-separated sequential irradiation for ripple pattern tailoring on silicon surfaces

Energy Technology Data Exchange (ETDEWEB)

Kumar, Tanuj [Department of Physics, Central University of Haryana, Jant-Pali, Mahendergarh 1123029 (India); Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110067 (India); Kumar, Manish, E-mail: manishbharadwaj@gmail.com [Department of Physics, Central University of Rajasthan, Kishangarh 305801 (India); Panchal, Vandana [Department of Physics, National Institute of Technology, Kurukshetra 136119 (India); Sahoo, P.K. [School of Physical Sciences, National Institute of Science Education and Research, Bhubaneswar 751005 (India); Kanjilal, D. [Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110067 (India)

2015-12-01

Highlights: • A new process for controlling the near-surface amorphization of ripples on Si surfaces. • Ripples generation by 100 KeV Ar{sup +} and amorphization control by 60 KeV Ar{sup +} irradiation. • Advantage of energy-separated irradiation demonstrated by detailed RBS and AFM studies. • Relevant mechanism is presented on the basis of DAMAGE and SIMNRA simulations. • Key role of solid flow towards the amorphous/crystalline interface is demonstrated. - Abstract: Nanoscale ripples on semiconductor surfaces have potential application in biosensing and optoelectronics, but suffer from uncontrolled surface-amorphization when prepared by conventional ion-irradiation methods. A two-step, energy-separated sequential-irradiation enables simultaneous control of surface-amorphization and ripple-dimensions on Si(1 0 0). The evolution of ripples using 100 keV Ar{sup +} bombardment and further tuning of the patterns using a sequential-irradiation by 60 keV Ar{sup +} at different fluences are demonstrated. The advantage of this approach as opposed to increased fluence at the same energy is clarified by atomic force microscopy and Rutherford backscattering spectroscopy investigations. The explanation of our findings is presented through DAMAGE simulation.

Helium retention in krypton ion pre-irradiated nanochannel W film

Science.gov (United States)

Qin, Wenjing; Ren, Feng; Zhang, Jian; Dong, Xiaonan; Feng, Yongjin; Wang, Hui; Tang, Jun; Cai, Guangxu; Wang, Yongqiang; Jiang, Changzhong

2018-02-01

Nanochannel tungsten (W) film is a promising candidate as an alternative to bulk W for use in fusion applications. In previous work it has been shown to have good radiation resistance under helium (He) irradiation. To further understand the influence of the irradiation-induced displacement cascade damage on helium retention behaviour in a fusion environment, in this work, nanochannel W film and bulk W were pre-irradiated by 800 keV Kr2+ ions to the fluence of 2.6  ×  1015 ions cm-2 and subsequently irradiated by 40 keV He+ ions to the fluence of 5  ×  1017 ions cm-2. The Kr2+ ion pre-irradiation greatly increases helium retention in the form of small clusters and retards the formation of large clusters. It can effectively inhibit surface helium blistering under high temperature annealing. Compared with bulk W, no cracks were found in the nanochannel W film post-irradiated by He+ ions at high fluence. The release of helium from the nanochannel W film is more than one order of magnitude higher than that of bulk W whether they are irradiated by single He+ ions or sequentially irradiated by Kr2+ and He+ ions. Moreover, swelling of the bulk W is more serious than that of the nanochannel film. Therefore, nanochannel W film has a higher radiation tolerance performance in the synergistic irradiation.

Development of porous structures in GaSb by ion irradiation

International Nuclear Information System (INIS)

Jacobi, C.C.; Steinbach, T.; Wesch, W.

2012-01-01

Ion irradiation of GaSb causes not only defect formation but also leads to the formation of a porous structure. To study the behaviour of this structural modification, GaSb was irradiated with 6 MeV Iodine ions and ion fluences from 5 × 10 12 to 6 × 10 15 ions/cm 2 . The samples were investigated by step height measurements and scanning electron microscopy (SEM). Experiments were performed with two different procedures: (CI) Continuous Irradiation of samples followed by measurements of the step height in air and (SI) Stepwise Irradiation of samples with measurements of the step height in air between subsequent irradiations. Samples irradiated continuously, show a linear increase of the step height with increasing ion fluence up to 1.5 × 10 14 ions/cm 2 followed by a steeper, linear increase for higher ion fluences up to a step height of 32 μm. This swelling is induced by a formation of voids, and the two different slopes can be explained by a transformation from isolated voids to a rod like structure. For samples irradiated accordingly to procedure (SI), the step height shows the same behaviour up to an ion fluence of 1.5 × 10 14 ions/cm 2 resulting in a step height of ≈3 μm but then decreases with further irradiation. The latter effect is caused by a compaction of the porous structure.

Near-surface density profiling of Fe ion irradiated Si (100) using extremely asymmetric x-ray diffraction by variation of the wavelength

Energy Technology Data Exchange (ETDEWEB)

Khanbabaee, B., E-mail: khanbabaee@physik.uni-siegen.de; Pietsch, U. [Solid State Physics, University of Siegen, D-57068 Siegen (Germany); Facsko, S. [Helmholtz-Zentrum Dresden-Rossendorf, 01314 Dresden (Germany); Doyle, S. [Synchrotron Light Source ANKA, Hermann-von-Helmholtz-Platz 1, D-76344 Eggenstein-Leopoldshafen (Germany)

2014-10-20

In this work, we report on correlations between surface density variations and ion parameters during ion beam-induced surface patterning process. The near-surface density variations of irradiated Si(100) surfaces were investigated after off-normal irradiation with 5 keV Fe ions at different fluences. In order to reduce the x-ray probing depth to a thickness below 5 nm, the extremely asymmetrical x-ray diffraction by variation of wavelength was applied, exploiting x-ray refraction at the air-sample interface. Depth profiling was achieved by measuring x-ray rocking curves as function of varying wavelengths providing incidence angles down to 0°. The density variation was extracted from the deviations from kinematical Bragg angle at grazing incidence angles due to refraction of the x-ray beam at the air-sample interface. The simulations based on the dynamical theory of x-ray diffraction revealed that while a net near-surface density decreases with increasing ion fluence which is accompanied by surface patterning, there is a certain threshold of ion fluence to surface density modulation. Our finding suggests that the surface density variation can be relevant with the mechanism of pattern formation.

Elaboration by ion implantation of cobalt nano-particles in silica layers and modifications of their properties by electron and swift heavy ion irradiations; Elaboration par implantation ionique de nanoparticules de cobalt dans la silice et modifications de leurs proprietes sous irradiation d'electrons et d'ions de haute energie

Energy Technology Data Exchange (ETDEWEB)

D' Orleans, C

2003-07-15

This work aims to investigate the capability of ion irradiations to elaborate magnetic nano-particles in silica layers, and to modify their properties. Co{sup +} ions have been implanted at 160 keV at fluences of 2.10{sup 16}, 5.10{sup 16} and 10{sup 17} at/cm{sup 2}, and at temperatures of 77, 295 and 873 K. The dependence of the particle size on the implantation fluence, and more significantly on the implantation temperature has been shown. TEM (transmission electronic microscopy) observations have shown a mean diameter varying from 1 nm for implantations at 2.10{sup 16} Co{sup +}/cm{sup 2} at 77 K, to 9.7 nm at 10{sup 17} Co{sup +}/cm{sup 2} at 873 K. For high temperature implantations, two regions of particles appear. Simulations based on a kinetic 3-dimensional lattice Monte Carlo method reproduce quantitatively the features observed for implantations. Thermal treatments induce the ripening of the particles. Electron irradiations at 873 K induce an important increase in mean particle sizes. Swift heavy ion irradiations also induce the ripening of the particles for low fluences, and an elongation of the particles in the incident beam direction for high fluences, resulting in a magnetic anisotropy. Mechanisms invoked in thermal spike model could also explain this anisotropic growth. (author)

Novel Faraday cup for the simultaneous observation and measurement of ion-beam currents

International Nuclear Information System (INIS)

Wei, C.Y.; Seidman, D.N.

1977-07-01

The Faraday cup is constructed around a Galileo channel electron multiplier array (CEMA) which serves as the basis of an internal image intensification system (a gain of greater than 10 4 ) for the observation of the ion beam; the CEMA also acts as a collector for the ion cured by a Keithley 602 electrometer. The ion current is integrated by a simple and inexpensive dosimeter; the electronic circuit for the dosimeter is described. The application of the Faraday cup to the observation and measurement of a 30 keV Ar + ion beam is presented as an illustrative example. This Faraday cup was also employed to observe and measure 30 keV Cr + , Mo + or W + and 18 keV Au + ion beams employed for the in-situ irradiation of field-ion microscope specimens

High Fidelity Ion Beam Simulation of High Dose Neutron Irradiation

Energy Technology Data Exchange (ETDEWEB)

Was, Gary; Wirth, Brian; Motta, Athur; Morgan, Dane; Kaoumi, Djamel; Hosemann, Peter; Odette, Robert

2018-04-30

Project Objective: The objective of this proposal is to demonstrate the capability to predict the evolution of microstructure and properties of structural materials in-reactor and at high doses, using ion irradiation as a surrogate for reactor irradiations. “Properties” includes both physical properties (irradiated microstructure) and the mechanical properties of the material. Demonstration of the capability to predict properties has two components. One is ion irradiation of a set of alloys to yield an irradiated microstructure and corresponding mechanical behavior that are substantially the same as results from neutron exposure in the appropriate reactor environment. Second is the capability to predict the irradiated microstructure and corresponding mechanical behavior on the basis of improved models, validated against both ion and reactor irradiations and verified against ion irradiations. Taken together, achievement of these objectives will yield an enhanced capability for simulating the behavior of materials in reactor irradiations

Ion irradiation-induced swelling and hardening effect of Hastelloy N alloy

Energy Technology Data Exchange (ETDEWEB)

Zhang, S.J. [Key Laboratory of Artificial Micro-and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan 430072 (China); Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai 201800 (China); Li, D.H.; Chen, H.C.; Lei, G.H.; Huang, H.F.; Zhang, W.; Wang, C.B. [Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai 201800 (China); Yan, L., E-mail: yanlong@sinap.ac.cn [Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai 201800 (China); Fu, D.J. [Key Laboratory of Artificial Micro-and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan 430072 (China); Tang, M. [Los Alamos National Laboratory, Los Alamos, NM 87545 (United States)

2017-06-15

The volumetric swelling and hardening effect of irradiated Hastelloy N alloy were investigated in this paper. 7 MeV and 1 MeV Xe ions irradiations were performed at room temperature (RT) with irradiation dose ranging from 0.5 to 27 dpa. The volumetric swelling increases with increasing irradiation dose, and reaches up to 3.2% at 27 dpa. And the irradiation induced lattice expansion is also observed. The irradiation induced hardening initiates at low ion dose (≤1dpa) then saturates with higher ion dose. The irradiation induced volumetric swelling may be ascribed to excess atomic volume of defects. The irradiation induced hardening may be explained by the pinning effect where the defects can act as obstacles for the free movement of dislocation lines. And the evolution of the defects' size and number density could be responsible for the saturation of hardness. - Highlights: •Irradiation Swelling: The irradiation induced volumetric swelling increases with ion dose. •Irradiation Hardening: The irradiation hardening initiates below 1 dpa, then saturates with higher ion dose (1–10 dpa). •Irradiation Mechanism: The irradiation phenomena are ascribed to the microstructural evolution of the irradiation defects.

Synergistic effects on dislocation loops in reduced-activation martensitic steel investigated by single and sequential hydrogen/helium ion irradiation

Energy Technology Data Exchange (ETDEWEB)

Zhang, Weiping [Hubei Nuclear Solid Physics Key Laboratory, Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan 430072 (China); Luo, Fengfeng [Hubei Nuclear Solid Physics Key Laboratory, Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan 430072 (China); Institute of Applied Physics, Jiangxi Academy of Sciences, Nanchang 330029 (China); Yu, Yanxia; Zheng, Zhongcheng; Shen, Zhenyu [Hubei Nuclear Solid Physics Key Laboratory, Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan 430072 (China); Guo, Liping, E-mail: guolp@whu.edu.cn [Hubei Nuclear Solid Physics Key Laboratory, Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan 430072 (China); Ren, Yaoyao [Center for Electron Microscopy, Wuhan University, Wuhan 430072 (China); Suo, Jinping [State Key Laboratory of Mould Technology, Institute of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074 (China)

2016-10-15

Single-beam and sequential-beam irradiations were performed to investigate the H/He synergistic effect on dislocation loops in reduced-activation ferritic/martensitic (RAFM) steels. The irradiations were carried out with 10 keV H{sup +}, 18 keV He{sup +} and 160 keV Ar{sup +}, alone and in combination at 723 K. He{sup +} single-beam irradiation induced much larger dislocation loops than that induced by both H{sup +} and Ar{sup +} single-beam irradiation. H{sup +} post-irradiation after He{sup +} irradiation further increased the size of dislocation loops, whilst He{sup +} post-irradiation or Ar{sup +} post-irradiation following H{sup +} irradiation only slightly increased the size of dislocation loops. The experiment results indicate that pre-implanted H{sup +} can drastically inhibit the growth while post-implanted H{sup +} can significantly enhance the growth of dislocation loops induced by He{sup +} irradiation. The mechanisms behind the complex synergistic phenomena between H and He and the different roles that H and He played in the growth of dislocation loops are discussed.

Making channeling visible: keV noble gas ion trails on Pt(111)

Energy Technology Data Exchange (ETDEWEB)

Redinger, A; Standop, S; Michely, T [II Physikalisches Institut, Universitaet zu Koeln, D-50937 Koeln (Germany); Rosandi, Y; Urbassek, H M, E-mail: urbassek@rhrk.uni-kl.de [Fachbereich Physik und Forschungszentrum OPTIMAS, Universitaet Kaiserslautern, Erwin-Schroedinger-Strasse, D-67663 Kaiserslautern (Germany)

2011-01-15

The impact of argon and xenon noble gas ions on Pt(111) in grazing incidence geometry are studied through direct comparison of scanning tunneling microscopy images and molecular dynamics simulations. The energy range investigated is 1-15 keV and the angles of incidence with respect to the surface normal are between 78.5{sup 0} and 88{sup 0}. The focus of the paper is on events where ions gently enter the crystal at steps and are guided in channels between the top most layers of the crystal. The trajectories of the subsurface channeled ions are visible as trails of surface damage. The mechanism of trail formation is analyzed using simulations and analytical theory. Significant differences between Xe{sup +} and Ar{sup +} projectiles in damage, in the onset energy of subsurface channeling as well as in ion energy dependence of trail length and appearance are traced back to the projectile and ion energy dependence of the stopping force. The asymmetry of damage production with respect to the ion trajectory direction is explained through the details of the channel shape and subchannel structure as calculated from the continuum approximation of the channel potential. Measured and simulated channel switching in directions normal and parallel to the surface as well as an increase of ions entering into channels from the perfect surface with increasing angles of incidence are discussed.

Antiradiation Vaccine: Technology Development- Radiation Tolerance,Prophylaxis, Prevention And Treatment Of Clinical Presentation After Heavy Ion Irradiation.

Science.gov (United States)

Popov, Dmitri; Maliev, Slava; Jones, Jeffrey

irradiation was generated in heavy ion (Fe56) accelerator - UTI. Heavy Ion linear transfer energy - 2000- 2600 KeV -mkm, 600 MeV -92U. Absorbed Dose - 3820 Rad. Experimental Design: Rabbits from all groups were irradiated by heavy ion accelerator. Group A: control-10 rabbits; Group B: placebo-5 rabbits; Group C: Radioprotectant Cystamine (50 mg-kg)-5 rabbits, 15 minutes before irradiation - 5 rabbits; Group D: Radioprotectant Gammafos (Amifostine 400mg -kg ) - 5 rabbits; Group E: Antiradiation Vaccine: subcutaneus administration or IM - 2 ml of active substance, 14 days before irradiation Results: Group A 100% mortality within two hours after heavy ion irradiation with clinical symptoms of Acute Cerebro- and Cardio-Vascular Radiation syndromes. Group B 100% mortality within 15 hours following irradiation. Group C 100% mortality within 14-15 hours after irradiation. Group D 100% mortality within 15-16 hours after irradiation. In groups A- D registered the development of acute radiation cerebrovascular and cardiovascular syndromes and also extensive burns. of skin produced rapid death. Group E -100% mortality in 280-290 hours (12 days) following heavy ion irradiation with animals exhibiting a combination or individual forms of Acute Cerebrovascular, Cardiovascular, and Gastrointestinal forms and focal skin burns. Discussion Antiradiation vaccine and immune-prophylaxis is an effective method of neutralization of Radiation Toxins. Vaccination before irradiation extended survival time after irradiation with heavy ions from two hours up to 300 hours. Clinical signs, clinical features, symptoms were somewhat attenuated. Degree of clinical forms of Acute Radiation Syndromes were diminished in their clinical manifestation and severity. Groups A-D demonstrated extremely severe level of Cerebrovascular and Cardiovascular forms of Acute Radiation Syndromes and lethality 100% was registered in short time after irradiation. Radiation induced burns in this groups (with Cutaneous sub

Xenon-ion-induced and thermal mixing of Co/Si bilayers and their interplay

Science.gov (United States)

Novaković, M.; Zhang, K.; Popović, M.; Bibić, N.; Hofsäss, H.; Lieb, K. P.

2011-05-01

Studies on ion-irradiated transition-metal/silicon bilayers demonstrate that interface mixing and silicide phase formation depend sensitively on the ion and film parameters, including the structure of the metal/Si interface. Thin Co layers e-gun evaporated to a thickness of 50 nm on Si(1 0 0) wafers were bombarded at room temperature with 400-keV Xe + ions at fluences of up to 3 × 10 16 cm -2. We used either crystalline or pre-amorphized Si wafers the latter ones prepared by 1.0-keV Ar-ion implantation. The as-deposited or Xe-ion-irradiated samples were then isochronally annealed at temperatures up to 700 °C. Changes of the bilayer structures induced by ion irradiation and/or annealing were investigated with RBS, XRD and HRTEM. The mixing rate for the Co/c-Si couples, Δ σ2/ Φ = 3.0(4) nm 4, is higher than the value expected for ballistic mixing and about half the value typical for spike mixing. Mixing of pre-amorphized Si is much weaker relative to crystalline Si wafers, contrary to previous results obtained for Fe/Si bilayers. Annealing of irradiated samples produces very similar interdiffusion and phase formation patterns above 400 °C as in the non-irradiated Co/Si bilayers: the phase evolution follows the sequence Co 2Si → CoSi → CoSi 2.

Xenon-ion-induced and thermal mixing of Co/Si bilayers and their interplay

International Nuclear Information System (INIS)

Novakovic, M.; Zhang, K.; Popovic, M.; Bibic, N.; Hofsaess, H.; Lieb, K.P.

2011-01-01

Studies on ion-irradiated transition-metal/silicon bilayers demonstrate that interface mixing and silicide phase formation depend sensitively on the ion and film parameters, including the structure of the metal/Si interface. Thin Co layers e-gun evaporated to a thickness of 50 nm on Si(1 0 0) wafers were bombarded at room temperature with 400-keV Xe + ions at fluences of up to 3 x 10 16 cm -2 . We used either crystalline or pre-amorphized Si wafers the latter ones prepared by 1.0-keV Ar-ion implantation. The as-deposited or Xe-ion-irradiated samples were then isochronally annealed at temperatures up to 700 o C. Changes of the bilayer structures induced by ion irradiation and/or annealing were investigated with RBS, XRD and HRTEM. The mixing rate for the Co/c-Si couples, Δσ 2 /Φ = 3.0(4) nm 4 , is higher than the value expected for ballistic mixing and about half the value typical for spike mixing. Mixing of pre-amorphized Si is much weaker relative to crystalline Si wafers, contrary to previous results obtained for Fe/Si bilayers. Annealing of irradiated samples produces very similar interdiffusion and phase formation patterns above 400 o C as in the non-irradiated Co/Si bilayers: the phase evolution follows the sequence Co 2 Si → CoSi → CoSi 2 .

Void formation in irradiated binary nickel alloys

International Nuclear Information System (INIS)

Shaikh, M.A.; Ahmed, M.; Akhter, J.I.

1994-01-01

In this work a computer program has been used to compute void radius, void density and swelling parameter for nickel and binary nickel-carbon alloys irradiated with nickel ions of 100 keV. The aim is to compare the computed results with experimental results already reported

Growth stress buildup in ion beam sputtered Mo thin films and comparative study of stress relaxation upon thermal annealing or ion irradiation

International Nuclear Information System (INIS)

Debelle, A.; Abadias, G.; Michel, A.; Jaouen, C.; Pelosin, V.

2007-01-01

In an effort to address the understanding of the origin of growth stress in thin films deposited under very energetic conditions, the authors investigated the stress state and microstructure of Mo thin films grown by ion beam sputtering (IBS) as well as the stress relaxation processes taking place during subsequent thermal annealing or ion irradiation. Different sets of samples were grown by varying the IBS deposition parameters, namely, the energy E 0 and the flux j of the primary ion beam, the target-to-sputtering gas mass ratio M 1 /M 2 as well as film thickness. The strain-stress state was determined by x-ray diffraction using the sin 2 ψ method and data analyzed using an original stress model which enabled them to correlate information at macroscopic (in terms of stress) and microscopic (in terms of defect concentration) levels. Results indicate that these refractory metallic thin films are characterized by a high compressive growth stress (-2.6 to -3.8 GPa), resulting from the creation of a large concentration (up to ∼1.4%) of point or cluster defects, due to the atomic peening mechanism. The M 1 /M 2 mass ratio enables tuning efficiently the mean deposited energy of the condensing atoms; thus, it appears to be the more relevant deposition parameter that allows modifying both the microstructure and the stress level in a significant way. The growth stress comes out to be highly unstable. It can be easily relaxed either by postgrowth thermal annealing or ion irradiation in the hundred keV range at very low dose [<0.1 dpa (displacement per atom)]. It is shown that thermal annealing induces deleterious effects such as oxidation of the film surface, decrease of the film density, and in some cases adhesion loss at the film/substrate interface, while ion irradiation allows controlling the stress level without generating any macroscopic damage

Development of 350 keV electron accelerator

International Nuclear Information System (INIS)

Qin Jiuchang; Cui Shan; Zhou Wenzhen; Cui Zhipeng; Shi Zhenghu; Lu Zhongcheng; Chen Shangwen; Zhang Lifeng; Cui Zongwei; Huang Jun; Yin Meng

2007-01-01

The 350 keV electron accelerator is used for irradiation and production of plas- tic film of the medical infusion bags. The body structure of Van de Graft accelerator and the high voltage power supply of Cockcrof-Walton accelerator are adopted in the electron accelerator. The 350 keV DC power supply is supplied by the high frequency power supply with 14 kHz and 35 kW. The body and DC power supply of the electron accelerator are installed in the tank filled with 0.3 MPa SF 6 . The electron accelerator is compact, self-shielding and suitable for on-line electron beam processing. The main characteristics of the facility are terminal voltage 370 kV, electron beam power 7 kW (350 keV/20 mA), scaning width 70 cm, irradiation dose inuniformity ≤7%. (authors)

Correlation between blister skin thickness, the maximum in the damage-energy distribution, and projected ranges of helium ions in Nb for the energy range 10 to 1500 keV

International Nuclear Information System (INIS)

St-Jacques, R.G.; Martel, J.G.; Terreault, B.; Veilleux, G.; Das, S.K.; Kaminsky, M.; Fenske, G.

1976-01-01

The skin thickness of blisters formed on polycrystalline niobium by 4 He + irradiation at room temperature for energies from 15 to 80 keV have been measured. Similar measurements were conducted for 10 keV 4 He + irradiation at 500 0 C to increase blister exfoliation, and thereby allow examination of a larger number of blister skins. For energies smaller than 100 keV the skin thicknesses are compared with the projected range and the damage-energy distributions constructed from moments interpolated from Winterbon's tabulated values. For energies of 10 and 15 keV the projected ranges and damage-energy distributions have also been computed with a Monte Carlo program. For energies larger than 100 keV the projected ranges of 4 He + in Nb were calculated using either Brice's formalism or the one given by Schiott. The thicknesses for 60 and 80 keV, and those reported earlier for 100 to 1500 keV correlate well with calculated projected ranges. For energies lower than 60 keV the measured thicknesses are larger than the calculated ranges

Angular scattering of 1–50 keV ions through graphene and thin carbon foils: Potential applications for space plasma instrumentation

International Nuclear Information System (INIS)

Ebert, Robert W.; Allegrini, Frédéric; Fuselier, Stephen A.; Nicolaou, Georgios; Bedworth, Peter; Sinton, Steve; Trattner, Karlheinz J.

2014-01-01

We present experimental results for the angular scattering of ∼1–50 keV H, He, C, O, N, Ne, and Ar ions transiting through graphene foils and compare them with scattering through nominal ∼0.5 μg cm −2 carbon foils. Thin carbon foils play a critical role in time-of-flight ion mass spectrometers and energetic neutral atom sensors in space. These instruments take advantage of the charge exchange and secondary electron emission produced as ions or neutral atoms transit these foils. This interaction also produces angular scattering and energy straggling for the incident ion or neutral atom that acts to decrease the performance of a given instrument. Our results show that the angular scattering of ions through graphene is less pronounced than through the state-of-the-art 0.5 μg cm −2 carbon foils used in space-based particle detectors. At energies less than 50 keV, the scattering angle half width at half maximum, ψ 1/2 , for ∼3–5 atoms thick graphene is up to a factor of 3.5 smaller than for 0.5 μg cm −2 (∼20 atoms thick) carbon foils. Thus, graphene foils have the potential to improve the performance of space-based plasma instruments for energies below ∼50 keV

Effect of irradiation temperature on microstructural changes in self-ion irradiated austenitic stainless steel

Science.gov (United States)

Jin, Hyung-Ha; Ko, Eunsol; Lim, Sangyeob; Kwon, Junhyun; Shin, Chansun

2017-09-01

We investigated the microstructural and hardness changes in austenitic stainless steel after Fe ion irradiation at 400, 300, and 200 °C using transmission electron microscopy (TEM) and nanoindentation. The size of the Frank loops increased and the density decreased with increasing irradiation temperature. Radiation-induced segregation (RIS) was detected across high-angle grain boundaries, and the degree of RIS increases with increasing irradiation temperature. Ni-Si clusters were observed using high-resolution TEM in the sample irradiated at 400 °C. The results of this work are compared with the literature data of self-ion and proton irradiation at comparable temperatures and damage levels on stainless steels with a similar material composition with this study. Despite the differences in dose rate, alloy composition and incident ion energy, the irradiation temperature dependence of RIS and the size and density of radiation defects followed the same trends, and were very comparable in magnitude.

Inactivation of catalase monolayers by irradiation with 100 keV electrons

International Nuclear Information System (INIS)

Hahn, M.; Seredynski, J.; Baumeister, W.

1976-01-01

A catalase monolayer adsorbed on a layer of arachidic acid deposited on a solid support was irradiated with 100 keV electrons simulating the conditions of electron microscopic imaging. Effective doses were calculated taking into account the angular and energy distribution of backscattered electrons. Enzymatic inactivation was chosen as the criterion for damage and was monitored by a rapid and quantifiable but nevertheless sensitive assay. Dose-response curves revealed that inactivation is a one-hit--multiple-target phenomenon, which is consistent with biochemical evidence for a cooperative function of subunits. The experimentally determined target size coincides fairly well with both calculated cross sections for inelastic interactions based on the atomic composition of catalase and with calculated cross sections for ionizing events based on the chemical bonds involved. This legitimates both types of calculations even for complex biomolecules

Evolution of nanodot morphology on polycarbonate (PC) surfaces by 40 keV Ar{sup +}

Energy Technology Data Exchange (ETDEWEB)

Goyal, Meetika, E-mail: meetika89@gmail.com; Chawla, Mahak; Gupta, Divya; Shekhawat, Nidhi; Sharma, Annu; Aggarwal, Sanjeev [Department of Physics, Kurukshetra University, Kurukshetra - 136119 (India)

2016-05-06

In the present paper we have discussed the effect of 40 keV Ar{sup +} ions irradiation on nanoscale surface morphology of Polycarbonate (PC) substrate. Specimens were sputtered at off normal incidences of 30°, 40° and 50° with the fluence of 1 × 10{sup 16} Ar{sup +}cm{sup −2}. The topographical behaviour of specimens was studied by using Atomic Force Microscopy (AFM) technique. AFM study demonstrates the evolution of nano dot morphology on PC specimens on irradiating with 1 × 10{sup 16} Ar{sup +}cm{sup −2}. Average size of dots varied from 37-95 nm in this specified range of incidence while density of dots varied from 0.17-3.0 × 107 dotscm{sup −2}. Such variations in morphological features have been supported by estimation of ion range and sputtering yield through SRIM simulations.

Photocarrier radiometry for predicting the degradation of electrical parameters of monocrystalline silicon (c-Si) solar cell irradiated by 100 KeV proton beams

International Nuclear Information System (INIS)

Song, P.; Liu, J.Y.; Yuan, H.M.; Oliullah, Md.; Wang, F.; Wang, Y.

2016-01-01

In this study, the monocrystalline silicon (c-Si) solar cell irradiated by 100 KeV proton beams at various fluences is investigated. A one-dimensional two-layer carrier density wave model has been developed to estimate the minority carrier lifetime of n-region and p-region of the non-irradiated c-Si solar cell by best fitting with the experimental photocarrier radiometry (PCR) signal (the amplitude and the phase). Furthermore, the lifetime is used to determine the initial defect density of the quasi-neutral region (QNR) of the solar cell to predict its I–V characteristics. The theoretically predicted short-circuit current density (J_s_c), and open-circuit voltage (V_o_c) of the non-irradiated samples are in good agreement with experiment. Then a three-region defect distribution model for the c-Si solar cell irradiated by proton beams is carried out to describe the defect density distribution according to Monte Carlo simulation results and the initial defect density of the non-irradiated sample. Finally, we find that the electrical measurements of J_s_c and V_o_c of the solar cells irradiated at different fluences using 100 KeV proton beams are consistent with the PCR predicting results.

Photocarrier radiometry for predicting the degradation of electrical parameters of monocrystalline silicon (c-Si) solar cell irradiated by 100 KeV proton beams

Energy Technology Data Exchange (ETDEWEB)

Song, P. [School of Mechatronics Engineering, Harbin Institute of Technology, Harbin 150001 (China); Liu, J.Y., E-mail: ljywlj@hit.edu.cn [School of Mechatronics Engineering, Harbin Institute of Technology, Harbin 150001 (China); State Key Laboratory of Robotics and System (HIT), Harbin 150001 (China); Yuan, H.M.; Oliullah, Md.; Wang, F. [School of Mechatronics Engineering, Harbin Institute of Technology, Harbin 150001 (China); Wang, Y., E-mail: songpengkevin@126.com [School of Mechatronics Engineering, Harbin Institute of Technology, Harbin 150001 (China); State Key Laboratory of Robotics and System (HIT), Harbin 150001 (China)

2016-09-15

In this study, the monocrystalline silicon (c-Si) solar cell irradiated by 100 KeV proton beams at various fluences is investigated. A one-dimensional two-layer carrier density wave model has been developed to estimate the minority carrier lifetime of n-region and p-region of the non-irradiated c-Si solar cell by best fitting with the experimental photocarrier radiometry (PCR) signal (the amplitude and the phase). Furthermore, the lifetime is used to determine the initial defect density of the quasi-neutral region (QNR) of the solar cell to predict its I–V characteristics. The theoretically predicted short-circuit current density (J{sub sc}), and open-circuit voltage (V{sub oc}) of the non-irradiated samples are in good agreement with experiment. Then a three-region defect distribution model for the c-Si solar cell irradiated by proton beams is carried out to describe the defect density distribution according to Monte Carlo simulation results and the initial defect density of the non-irradiated sample. Finally, we find that the electrical measurements of J{sub sc} and V{sub oc} of the solar cells irradiated at different fluences using 100 KeV proton beams are consistent with the PCR predicting results.

Energy dependence of the air kerma response of a liquid ionization chamber at photon energies between 8 keV and 1250 keV

International Nuclear Information System (INIS)

Hilgers, G.; Bahar-Gogani, J.; Wickman, G.

2002-01-01

Full text: In its recent reports on cardiovascular brachytherapy the DGMP recommends the source strength of brachytherapy sources being characterized in terms of absorbed dose to water at a distance of 2 mm from the central axis of the source. As a consequence, the response of a detector suitable for characterizing such sources with respect to absorbed dose to water should depend only to a small extent on radiation energy. Additionally, the detection volume of the detector has to be sufficiently small for the necessary spatial resolution to be obtained. The liquid ionization chamber as described in seems to be a promising means for this type of measurements. The two components of the ionization liquid (TMS and isooctane) can be mixed in a ratio which ensures that the mass-energy absorption coefficient of the resulting mixture deviates from that of water by less than ±15 % down to photon energies of 10 keV. Due to the high density of the ionization medium, the spacing between the two electrodes of the ionization chamber can be made as small as a few tenths of a millimeter and still the resulting ionization current is sufficiently large. The ionization chamber used in the present investigation is a plane parallel chamber 5 mm in diameter and of 0.3 mm electrode spacing. The ionization medium is a mixture of 40 % TMS and 60 % isooctane. The irradiations were carried out with the ISO wide spectra series with tube voltages between 10 kV and 300 kV and with 137 Cs and 60 Co γ-radiation. As a first step, the response of the liquid ionization chamber was investigated with respect to air kerma instead of absorbed dose to water. Although the mass-energy absorption coefficient of the liquid deviates from that of air by less than ±10 % over the photon energy range, the measured chamber response varies by a factor of about 3.5. Monte Carlo calculations carried out with EGSnrc show a variation of the chamber response smaller than ±20 %. Measurements of the ion yield of the

Biological effect of penetration controlled irradiation with ion beams

Energy Technology Data Exchange (ETDEWEB)

Tanaka, Atsushi; Shimizu, Takashi; Kikuchi, Masahiro; Kobayashi, Yasuhiko; Watanabe, Hiroshi [Japan Atomic Energy Research Inst., Takasaki, Gunma (Japan). Takasaki Radiation Chemistry Research Establishment; Yamashita, Takao

1997-03-01

To investigate the effect of local irradiation with ion beams on biological systems, technique for penetration controlled irradiation has been established. The range in a target was controlled by changing the distance from beam window in the atmosphere, and could be controlled linearly up to about 31 {mu}m in biological material. In addition, the effects of the penetration controlled irradiations with 1.5 MeV/u C and He ions were examined using tobacco pollen. The increased frequency of leaky pollen produced by ion beams suggests that the efficient pollen envelope damages would be induced at the range-end of ion beams. (author)

Similarity between the effects of carbon-ion irradiation and X-irradiation on the development of rat brain

International Nuclear Information System (INIS)

Inouye, Minoru; Hayasaka, Shizu; Murata, Yoshiharu; Takahashi, Sentaro; Kubota, Yoshihisa

2000-01-01

The effects of carbon-ion irradiation and X-irradiation on the development of rat brain were compared. Twenty pregnant rats were injected with bromodeoxyuridine (BrdU) at 9 pm on day 18 pregnancy and divided into five groups. Three hours after injection (day 19.0) one group was exposed to 290 MeV/u carbon-ion radiation by a single dose of 1.5 Gy. Other groups were exposed to X-radiation by 1.5, 2.0 or 2.5 Gy, or sham-treated, respectively. Fetuses were removed from one dam in each group 8 h after exposure and examined histologically. Extensive cell death was observed in the brain mantle from the irradiated groups. The cell death after 1.5 Gy carbon-ion irradiation was remarkably more extensive than that after 1.5 Gy X-irradiation, but comparable to that after 2.0 Gy or 2.5 Gy X-irradiation. The remaining rats were allowed to give birth and the offspring were sacrificed at 6 weeks of age. All of the irradiated offspring manifested microcephaly. The size of the brain mantle exposed to 1.5 Gy carbon-ion radiation was significantly smaller than that exposed to 1.5 Gy X-radiation and larger than that exposed to 2.5 Gy X-radiation. A histological examination of the cerebral cortex revealed that cortical layers II-IV were malformed. The defect by 1.5 Gy carbon-ion irradiation was more severe than that by the same dose of X-irradiation. Although the BrdU-incorporated neurons were greatly reduced in number in all irradiated groups, these cells reached the superficial area of the cortex. These findings indicated that the effects of both carbon-ion irradiation and X-irradiation on the development of rat brain are similar in character, and the effect of 1.5 Gy carbon-ion irradiation compares to that of 2.0-2.5 Gy X-irradiation. (author)

Damage of copper by low energy xenon ions

International Nuclear Information System (INIS)

Babad-Zakhryapin, A.A.; Popenko, V.A.

1988-01-01

Changes in the copper crystal structure bombarded by xenon ions with 30-150 eV energy are studied. Foils of MOb copper mark, 10 mm in diameter and 100 μm thickness, are irradiated. The initial specimens are annealed in vacuum during 1 h at 900 K temperature. The specimens are bombarded by xenon ions in a water-cooled holder. A TE-O type accelerator serves as a xenon ion source. The ion energy varies within 30 to 150 eV range. The ion flux density is 8x10 16 ion/(cm 2 xs). It is shown that crystal structure variations at deep depths are observed not only at high (>1 keV), but at low ion energies down to several dozens of electronvolt as well. The crystal structure variation on copper irradiation by xenon ions with 30-150 eV energy is followed by formation of defects like dislocation loops, point defects in the irradiated target bulk

TEM study of the ion beam induced damage during 14 kev P+ implantation in silicon

International Nuclear Information System (INIS)

Rubanov, S.; Tamanyan, G.; Hudson, F.; Jamieson, D.N.; McCallum, J.C.; Prawer, S.

2005-01-01

The proposed silicon-based quantum computer architecture comprises an array of phosphorus donor atoms (qubits) positioned with nanometre accuracy beneath the surface of a semiconductor host, using a single ion implantation technique. The average depth of the implanted ions (the projected range R p ), lateral range R p 1, and the distribution of ions about that depth can be approximated as two-dimensional Gaussian with standard deviation ΔR p and ΔR p 1 (lateral straggle). Using transmission electron microscopy (TEM) we studied ion beam induced damage after 14 keV P + implantation in Si. The TEM images allowed us to compare the depth of the amorphous cluster formation to R p , R p 1, ΔR p 1 calculated from SRIM and hence determine evidence for the limitation on the accuracy of the position of the implanted ions imposed by straggling. (author). 4 refs., 3 figs

Heavy ion irradiation of astrophysical ice analogs

International Nuclear Information System (INIS)

Duarte, Eduardo Seperuelo; Domaracka, Alicja; Boduch, Philippe; Rothard, Hermann; Balanzat, Emmanuel; Dartois, Emmanuel; Pilling, Sergio; Farenzena, Lucio; Frota da Silveira, Enio

2009-01-01

Icy grain mantles consist of small molecules containing hydrogen, carbon, oxygen and nitrogen atoms (e.g. H 2 O, GO, CO 2 , NH 3 ). Such ices, present in different astrophysical environments (giant planets satellites, comets, dense clouds, and protoplanetary disks), are subjected to irradiation of different energetic particles: UV radiation, ion bombardment (solar and stellar wind as well as galactic cosmic rays), and secondary electrons due to cosmic ray ionization of H 2 . The interaction of these particles with astrophysical ice analogs has been the object of research over the last decades. However, there is a lack of information on the effects induced by the heavy ion component of cosmic rays in the electronic energy loss regime. The aim of the present work is to simulate of the astrophysical environment where ice mantles are exposed to the heavy ion cosmic ray irradiation. Sample ice films at 13 K were irradiated by nickel ions with energies in the 1-10 MeV/u range and analyzed by means of FTIR spectrometry. Nickel ions were used because their energy deposition is similar to that deposited by iron ions, which are particularly abundant cosmic rays amongst the heaviest ones. In this work the effects caused by nickel ions on condensed gases are studied (destruction and production of molecules as well as associated cross sections, sputtering yields) and compared with respective values for light ions and UV photons. (authors)

Heavy ion irradiation induces autophagy in irradiated C2C12 myoblasts and their bystander cells

International Nuclear Information System (INIS)

Hino, Mizuki; Tajika, Yuki; Hamada, Nobuyuki

2010-01-01

Autophagy is one of the major processes involved in the degradation of intracellular materials. Here, we examined the potential impact of heavy ion irradiation on the induction of autophagy in irradiated C2C12 mouse myoblasts and their non-targeted bystander cells. In irradiated cells, ultrastructural analysis revealed the accumulation of autophagic structures at various stages of autophagy (id est (i.e.) phagophores, autophagosomes and autolysosomes) within 20 min after irradiation. Multivesicular bodies (MVBs) and autolysosomes containing MVBs (amphisomes) were also observed. Heavy ion irradiation increased the staining of microtubule-associated protein 1 light chain 3 and LysoTracker Red (LTR). Such enhanced staining was suppressed by an autophagy inhibitor 3-methyladenine. In addition to irradiated cells, bystander cells were also positive with LTR staining. Altogether, these results suggest that heavy ion irradiation induces autophagy not only in irradiated myoblasts but also in their bystander cells. (author)

Effects of sequential helium and hydrogen ion irradiation on the nucleation and evolution of bubbles in tungsten

Energy Technology Data Exchange (ETDEWEB)

Shen, Zhenyu; Zheng, Zhongcheng [Hubei Nuclear Solid Physics Key Laboratory, Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072 (China); Luo, Fengfeng [Hubei Nuclear Solid Physics Key Laboratory, Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072 (China); Institute of Applied Physics, Jiangxi Academy of Science, Nanchang, 330029 (China); Hu, Wenhui [Hubei Nuclear Solid Physics Key Laboratory, Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072 (China); Institute of Plasma Physics, Chinese Academy of Sciences, Hefei, 230031 (China); Zhang, Weiping [Hubei Nuclear Solid Physics Key Laboratory, Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072 (China); Guo, Liping, E-mail: guolp@whu.edu.cn [Hubei Nuclear Solid Physics Key Laboratory, Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072 (China); Ren, Yaoyao [Center for Electron Microscopy, Wuhan University, Wuhan, 430072 (China)

2017-02-15

Highlights: • The effect of H{sup +} irradiation on formation and evolution of helium bubbles is explored. • The growth of hydrogen bubbles under He{sup +} irradiation is observed. • Mechanism of synergistic effect between He and H is discussed. - Abstract: Irradiations of He{sup +} and H{sup +} have been performed to investigate the effect of H{sup +} irradiation on existing helium bubbles and the effect of pre-irradiation of H{sup +} on the formation of helium bubbles in tungsten. The specimens were irradiated at 800 °C with either 10kev-H{sup +}, 20kev-He{sup +}, or sequentially irradiated with both H{sup +} and He{sup +}. After H{sup +} irradiation, the growth of existing helium bubbles was observed. It was also found that pre- or post- irradiation of H{sup +} enhanced the nucleation of helium bubbles. The growth of hydrogen bubbles was also observed after post irradiation of He{sup +}. The possible mechanism is discussed.

The trapping of hydrogen ions in vanadium and titanium

International Nuclear Information System (INIS)

Arbuzov, V.L.; Vykhodets, V.B.; Raspopova, G.A.

1996-01-01

The accumulation of implanted deuterium has been investigated at room temperature in vanadium, titanium and their alloys up to (2-15) x 10 17 ions cm -2 fluences by means of D(d,p)T reaction. The amount of accumulated D was measured using a 700 KeV D + ion beam during implantation. It is found that concentration of implanted deuterium in irradiated samples nonmonotonously increases with increasing fluence and in a complicated manner depends upon V-Ti alloy composition. These data are explained by concentration dependence of D diffusion coefficient in V-Ti alloys, structural ion irradiation induced inhomogeneity of alloys with >5-8 at.% Ti, and irradiation-enhanced diffusion of deuterium. (orig.)

Irradiation of graphene field effect transistors with highly charged ions

Energy Technology Data Exchange (ETDEWEB)

Ernst, P.; Kozubek, R.; Madauß, L.; Sonntag, J.; Lorke, A.; Schleberger, M., E-mail: marika.schleberger@uni-due.de

2016-09-01

In this work, graphene field-effect transistors are used to detect defects due to irradiation with slow, highly charged ions. In order to avoid contamination effects, a dedicated ultra-high vacuum set up has been designed and installed for the in situ cleaning and electrical characterization of graphene field-effect transistors during irradiation. To investigate the electrical and structural modifications of irradiated graphene field-effect transistors, their transfer characteristics as well as the corresponding Raman spectra are analyzed as a function of ion fluence for two different charge states. The irradiation experiments show a decreasing mobility with increasing fluences. The mobility reduction scales with the potential energy of the ions. In comparison to Raman spectroscopy, the transport properties of graphene show an extremely high sensitivity with respect to ion irradiation: a significant drop of the mobility is observed already at fluences below 15 ions/μm{sup 2}, which is more than one order of magnitude lower than what is required for Raman spectroscopy.

Xenon-ion-induced and thermal mixing of Co/Si bilayers and their interplay

Energy Technology Data Exchange (ETDEWEB)

Novakovic, M. [VINCA Institute of Nuclear Sciences, 11001 Belgrade (Serbia); II. Physikalisches Institut, Georg-August-Universitaet Goettingen, Friedrich-Hund-Platz 1, 37077 Goettingen (Germany); Zhang, K. [II. Physikalisches Institut, Georg-August-Universitaet Goettingen, Friedrich-Hund-Platz 1, 37077 Goettingen (Germany); Popovic, M.; Bibic, N. [VINCA Institute of Nuclear Sciences, 11001 Belgrade (Serbia); II. Physikalisches Institut, Georg-August-Universitaet Goettingen, Friedrich-Hund-Platz 1, 37077 Goettingen (Germany); Hofsaess, H. [II. Physikalisches Institut, Georg-August-Universitaet Goettingen, Friedrich-Hund-Platz 1, 37077 Goettingen (Germany); Lieb, K.P., E-mail: plieb@gwdg.d [II. Physikalisches Institut, Georg-August-Universitaet Goettingen, Friedrich-Hund-Platz 1, 37077 Goettingen (Germany)

2011-05-01

Studies on ion-irradiated transition-metal/silicon bilayers demonstrate that interface mixing and silicide phase formation depend sensitively on the ion and film parameters, including the structure of the metal/Si interface. Thin Co layers e-gun evaporated to a thickness of 50 nm on Si(1 0 0) wafers were bombarded at room temperature with 400-keV Xe{sup +} ions at fluences of up to 3 x 10{sup 16} cm{sup -2}. We used either crystalline or pre-amorphized Si wafers the latter ones prepared by 1.0-keV Ar-ion implantation. The as-deposited or Xe-ion-irradiated samples were then isochronally annealed at temperatures up to 700 {sup o}C. Changes of the bilayer structures induced by ion irradiation and/or annealing were investigated with RBS, XRD and HRTEM. The mixing rate for the Co/c-Si couples, {Delta}{sigma}{sup 2}/{Phi} = 3.0(4) nm{sup 4}, is higher than the value expected for ballistic mixing and about half the value typical for spike mixing. Mixing of pre-amorphized Si is much weaker relative to crystalline Si wafers, contrary to previous results obtained for Fe/Si bilayers. Annealing of irradiated samples produces very similar interdiffusion and phase formation patterns above 400 {sup o}C as in the non-irradiated Co/Si bilayers: the phase evolution follows the sequence Co{sub 2}Si {yields} CoSi {yields} CoSi{sub 2}.

Modification of WS2 nanosheets with controllable layers via oxygen ion irradiation

Science.gov (United States)

Song, Honglian; Yu, Xiaofei; Chen, Ming; Qiao, Mei; Wang, Tiejun; Zhang, Jing; Liu, Yong; Liu, Peng; Wang, Xuelin

2018-05-01

As one kind of two-dimensional materials, WS2 nanosheets have drawn much attention with different kinds of research methods. Yet ion irradiation method was barely used for WS2 nanosheets. In this paper, the structure, composition and optical band gap (Eg) of the multilayer WS2 films deposited by chemical vapor deposition (CVD) method on sapphire substrates before and after oxygen ion irradiation with different energy and fluences were studied. Precise tailored layer-structures and a controllable optical band gap of WS2 nanosheets were achieved after oxygen ion irradiation. The results shows higher energy oxygen irradiation changed the shape from triangular shaped grains to irregular rectangle shape but did not change 2H-WS2 phase structure. The intensity of E2g1 (Г) and A1g (Г) modes decreased and have small shifts after oxygen ion irradiation. The peak frequency difference between the E2g1 (Г) and A1g (Г) modes (Δω) decreased after oxygen ion irradiation, and this result indicates the number of layers decreased after oxygen ion irradiation. The Eg decreased with the increase of the energy and the fluence of oxygen ions. The number of layers, thickness and optical band gap changed after ion irradiation with different ion fluences and energies. The results proposed a new strategy for precise control of multilayer nanosheets and demonstrated the high applicability of ion irradiation in super-capacitors, field effect transistors and other applications.

Strain-dependent Damage in Mouse Lung After Carbon Ion Irradiation

Energy Technology Data Exchange (ETDEWEB)

Moritake, Takashi [Advanced Radiation Biology Research Program, Research Center for Charged Particle Therapy, National Institute of Radiological Sciences, Chiba (Japan); Proton Medical Research Center, University of Tsukuba, Tsukuba (Japan); Fujita, Hidetoshi; Yanagisawa, Mitsuru; Nakawatari, Miyako; Imadome, Kaori; Nakamura, Etsuko; Iwakawa, Mayumi [Advanced Radiation Biology Research Program, Research Center for Charged Particle Therapy, National Institute of Radiological Sciences, Chiba (Japan); Imai, Takashi, E-mail: imait@nirs.go.jp [Advanced Radiation Biology Research Program, Research Center for Charged Particle Therapy, National Institute of Radiological Sciences, Chiba (Japan)

2012-09-01

Purpose: To examine whether inherent factors produce differences in lung morbidity in response to carbon ion (C-ion) irradiation, and to identify the molecules that have a key role in strain-dependent adverse effects in the lung. Methods and Materials: Three strains of female mice (C3H/He Slc, C57BL/6J Jms Slc, and A/J Jms Slc) were locally irradiated in the thorax with either C-ion beams (290 MeV/n, in 6 cm spread-out Bragg peak) or with {sup 137}Cs {gamma}-rays as a reference beam. We performed survival assays and histologic examination of the lung with hematoxylin-eosin and Masson's trichrome staining. In addition, we performed immunohistochemical staining for hyaluronic acid (HA), CD44, and Mac3 and assayed for gene expression. Results: The survival data in mice showed a between-strain variance after C-ion irradiation with 10 Gy. The median survival time of C3H/He was significantly shortened after C-ion irradiation at the higher dose of 12.5 Gy. Histologic examination revealed early-phase hemorrhagic pneumonitis in C3H/He and late-phase focal fibrotic lesions in C57BL/6J after C-ion irradiation with 10 Gy. Pleural effusion was apparent in C57BL/6J and A/J mice, 168 days after C-ion irradiation with 10 Gy. Microarray analysis of irradiated lung tissue in the three mouse strains identified differential expression changes in growth differentiation factor 15 (Gdf15), which regulates macrophage function, and hyaluronan synthase 1 (Has1), which plays a role in HA metabolism. Immunohistochemistry showed that the number of CD44-positive cells, a surrogate marker for HA accumulation, and Mac3-positive cells, a marker for macrophage infiltration in irradiated lung, varied significantly among the three mouse strains during the early phase. Conclusions: This study demonstrated a strain-dependent differential response in mice to C-ion thoracic irradiation. Our findings identified candidate molecules that could be implicated in the between-strain variance to early

Surface modification and adhesion improvement of PTFE film by ion beam irradiation

International Nuclear Information System (INIS)

Lee, S.W.; Hong, J.W.; Wye, M.Y.; Kim, J.H.; Kang, H.J.; Lee, Y.S.

2004-01-01

The polytetrafluoroethylene (PTFE) surfaces, modified by 1 kV Ar + or O 2 + ion beam irradiation, was investigated with in-situ X-ray photoelectron spectroscopy (XPS), scanning electron micrographs (SEM), atomic force microscopy (AFM) measurements. The surface of PTFE films modified by Ar + ion irradiation was carbonized and the surface roughness increased with increasing ion doses. The surface of PTFE films modified by both Ar + ion in O 2 atmosphere and O 2 + ion irradiation formed the oxygen function group on PTFE surface, and the surface roughness change was relatively small. The adhesion improvement in Ar + ion irradiated PTFE surface is attributed to mechanical interlocking due to the surface roughness and -CF-radical, but that in Ar + ion irradiation in an O 2 atmosphere was contributed by the C-O complex and -CF-radical with mechanical interlocking. The C-O complex and -CF-radical in O 2 + ion irradiated surface contributed to the adhesion

Thermal desorption spectroscopy of pyrolytic graphite cleavage faces after keV deuterium irradiation at 330-1000 K

International Nuclear Information System (INIS)

Gotoh, Y.; Yamaki, T.; Tokiguchi, K.

1992-01-01

Thermal desorption spectroscopy (TDS) measurements were made on D 2 and CD 4 from surface layers of pyrolytic graphite cleavage faces after 3 keV D + 3 irradiation to 1.5 x 10 18 D/cm 2 at irradiation temperatures from 330 to 1000 K. Thermal desorption of both D 2 and CD 4 was observed to rise simultaneously at around 700 K. The D 2 peak was found at T m = 900-1000 K, while the CD 4 peak appeared at a lower temperature, 800-840 K. The T m for the D 2 TDS increased, while that for the CD 4 decreased with increasing irradiation temperature. These results obviously indicate that the D 2 desorption is detrapping/recombination limited, while the CD 4 desorption is most likely to be diffusion limited. The amount of thermally desorbed D 2 after the D + irradiation was observed to monotonously decrease as the irradiation temperature was increased from 330 to 1000 K. These tendencies agreed with previous results for the irradiation temperature dependencies of both C1s chemical shift (XPS) and the interlayer spacing, d 002 (HRTEM), on the graphite basal face. (orig.)

Ion Irradiation Damage in Zirconate and Titanate Ceramics for Pu Disposition

International Nuclear Information System (INIS)

Stewart, Martin W.; Begg, Bruce D.; Finnie, K.; Colella, Michael; Li, H.; McLeod, Terry; Smith, Katherine L.; Zhang, Zhaoming; Weber, William J.; Thevuthasan, Suntharampillai

2004-01-01

In this paper, we discuss the effect of ion irradiation on pyrochlore-rich titanate and defect-fluorite zirconate ceramics designed for plutonium immobilization. Samples, with Ce as an analogue for Pu, were made via oxide routes and consolidated by cold-pressing and sintering. Ion irradiation damage was carried out with 2 MeV Au2+ ions to a fluence of 5 ions nm-2 in the accelerator facilities within the Environmental Molecular Sciences Laboratory at Pacific Northwest National Laboratory. Irradiated and non-irradiated samples were examined by x-ray diffraction, scanning and transmission electron microscopy, x-ray photoelectron and infrared spectroscopy, and spectroscopic ellipsometry. Samples underwent accelerated leach testing at pH 1.75 (nitric acid) at 90 C for 28 days. The zirconate samples were more ion-irradiation damage resistant than the titanate samples, showing little change after ion-irradiation whereas the titanate samples formed an amorphous surface layer ∼ 500 nm thick. While all samples had high aqueous durability, the titanate leach rate was ∼ 5 times that of the zirconate. The ion-irradiation increased the leach rate of the titanate without impurities by ∼ 5 times. The difference in the leach rates between irradiated and unirradiated zirconate samples is small. However, the zirconates were less able to incorporate impurities than the titanate ceramics and required higher sintering temperatures, ∼ 1500 C compared to 1350 C for the titanates.

Synthesis of Fe–C{sub 60} complex by ion irradiation

Energy Technology Data Exchange (ETDEWEB)

Minezaki, Hidekazu, E-mail: dn1000012@toyo.jp [Graduate School of Engineering, Toyo University, 2100 Kujirai, Kawagoe, Saitama 350-8585 (Japan); Oshima, Kosuke [Graduate School of Engineering, Toyo University, 2100 Kujirai, Kawagoe, Saitama 350-8585 (Japan); Uchida, Takashi; Mizuki, Toru [Bio-Nano Electronics Research Centre, Toyo University, 2100 Kujirai, Kawagoe, Saitama 350-8585 (Japan); Racz, Richard [Institute of Nuclear Research (ATOMKI), H-4026, Debrecen, Bem tér 18/C (Hungary); Muramatsu, Masayuki [National Institute of Radiological Sciences (NIRS), 4-9-1 Anagawa, Inage-ku, Chiba-shi, Chiba 263-8555 (Japan); Asaji, Toyohisa [Oshima National College of Maritime Technology, 1091-1 Komatsu Suou Oshima City, Oshima, Yamaguchi 742-2193 (Japan); Kitagawa, Atsushi [National Institute of Radiological Sciences (NIRS), 4-9-1 Anagawa, Inage-ku, Chiba-shi, Chiba 263-8555 (Japan); Kato, Yushi [Graduate School of Engineering, Osaka University, 2-1 Yamada-oka, Suita-shi, Osaka 565-0871 (Japan); Biri, Sandor [Institute of Nuclear Research (ATOMKI), H-4026, Debrecen, Bem tér 18/C (Hungary); Yoshida, Yoshikazu [Graduate School of Engineering, Toyo University, 2100 Kujirai, Kawagoe, Saitama 350-8585 (Japan); Bio-Nano Electronics Research Centre, Toyo University, 2100 Kujirai, Kawagoe, Saitama 350-8585 (Japan)

2013-09-01

Highlights: •The Fe{sup +} beam was irradiated to the C{sub 60} thin films. •The Fe{sup +}-irradiated C{sub 60} thin films were analyzed by LDI-TOF-MS and by HPLC. •The peak with mass/charge of 776 was observed in the Fe{sup +}-irradiated C{sub 60} thin film. •We could synthesize the Fe–C{sub 60} complex as a new material. -- Abstract: In order to synthesize the Fe@C{sub 60} complex, iron ion beam irradiated to C{sub 60} thin films. The energy of the irradiated iron ions was controlled from 50 eV to 250 eV. The dose of that was controlled from 6.67 × 10{sup 12} to 6.67 × 10{sup 14} ions/cm{sup 2}. By the analysis of the surface of the iron ion irradiated C{sub 60} thin films using laser desorption/ionization time-of-flight mass spectrometry, we could confirm the peak with mass/charge of 776. The mass/charge of 776 corresponds to Fe + C{sub 60}. We obtained the maximum intensity of the peak with mass/charge of 776 under the irradiation iron ion energy and the dose were 50 eV and 3.30 × 10{sup 13} ions/cm{sup 2}, respectively. Then, the separation of the material with mass of 776 was performed by using high performance liquid chromatography. We could separate the Fe + C{sub 60} from the iron ion irradiated C{sub 60} thin film. As a result, we could synthesize the Fe + C{sub 60} complex as a new material.

Effects of low and high energy ion bombardment on ETFE polymer

Science.gov (United States)

Minamisawa, R. A.; De Almeida, A.; Abidzina, V.; Parada, M. A.; Muntele, I.; Ila, D.

2007-04-01

The polymer ethylenetetrafluoroethylene (ETFE) is used as anti-adherent coatings for food packages and radiation dosimeters. In this work, we compare the damage induced in ETFE bombarded with 100 keV Si ions with that induced by 1 MeV proton bombardment. The damage depends on the type, energy and intensity of the irradiation. Irradiated films were analyzed with optical absorption photospectrometry, Raman spectroscopy and Fourier transform infrared (FTIR) spectroscopy to determine the chemical nature of the structural changes caused by ion irradiation. Computer simulations were performed to evaluate the radiation damage.

Tuning wettability of hydrogen titanate nanowire mesh by Na+ irradiation

Science.gov (United States)

Das, Pritam; Chatterjee, Shyamal

2018-04-01

Hydrogen titanate (HT) nanowires have been widely studied for remarkable properties and various potential applications. However, a handful studies are available related to ion beam induced structural changes and influence on wetting behavior of the HT nanowire surface. In this work, we exposed HT nanowires to 5 keV Na+ at an ion fluence of 1×1016 ions.cm-2. Scanning electron microscope shows that at this ion fluence nanowires are bent arbitrarily and they are welded to each other forming an interlinked network structure. Computer simulation shows that ion beam induces defect formation in the nanowires, which plays major role in such structural modifications. An interesting alteration of surface wetting property is observed due to ion irradiation. The hydrophilic pristine surface turns into hydrophobic after ion irradiation.

Low energy ion implantation and high energy heavy ion irradiation in C60 films

International Nuclear Information System (INIS)

Narayanan, K.L.; Yamaguchi, M.; Dharmarasu, N.; Kojima, N.; Kanjilal, D.

2001-01-01

C 60 films have been bombarded with low energy boron ions and high energy swift heavy ions (SHI) of silver and oxygen at different doses. Raman scattering and Fourier transform infrared (FTIR) studies were carried out on the virgin and irradiated films and the results are in good agreement with each other. The films subject to low energy boron ion implantation showed destruction of the bukky balls whereas the films subject to high energy ion irradiation did not show appreciable effects on their structure. These results indicate that C 60 films are more prone to defects by elastic collision and subsequent implantation at lower energy. Irradiation at higher energy was less effective in creating appreciable defects through electronic excitation by inelastic collisions at similar energy density

Test of a compact 750 keV H- preinjector

International Nuclear Information System (INIS)

Meitzler, C.R.; Datte, P.; Huson, F.R.; Kazimi, R.; Kronke, C.; Machida, S.; MacKay, W.; Ohnuma, S.; Raparia, D.; Sun, D.; Tompkins, P.; Ziegler, J.

1989-01-01

A 750 keV RFQ based accelerator is being developed at the Texas Accelerator Center. A modified magnetron ion source will produce 10--100 mA of 30 keV H - beam. A 35 keV transport line that transports the beam from the ion source to the entrance of the RFQ without becoming neutralized has been designed and is under construction. The RFQ is a 86 cm long, four rod structure that operates at 470 MHz. Results of tests on the cold model are reported. 5 refs

Novel Faraday cup for the simultaneous observation and measurement of ion-beam currents

International Nuclear Information System (INIS)

Wei, C.; Seidman, D.N.

1977-01-01

A novel Faraday cup is described which allows the simultaneous observation and measurement of ion-beam currents. The Faraday cup is constructed around a Galileo channel electron multiplier array (CEMA), which serves as the basis of an internal image intensification system (a gain of >10 4 ) for the observation of the ion beam; the CEMA also acts as a collector for the ion current which is measured by a Keithley 602 electrometer. The ion current is integrated by a simple and inexpensive dosimeter; the electronic circuit for the dosimeter is described. The application of the Faraday cup to the observation and measurement of a 30-keV Ar + ion beam is presented as an illustrative example. We have also employed this Faraday cup to observe and measure 30-keV Cr + , Mo + , or W + , and 18-keV Au + ion beams employed for the in situ irradiation of field-ion microscope specimens

Electrical conduction in 100 keV Kr+ ion implanted poly (ethylene terephthalate)

Science.gov (United States)

Goyal, P. K.; Kumar, V.; Gupta, Renu; Mahendia, S.; Anita, Kumar, S.

2012-06-01

Polyethylene terephthalate (PET) samples have been implanted to 100 keV Kr+ ions at the fluences 1×1015-- 1×1016 cm-2. From I-V characteristics, the conduction mechanism was found to be shifted from ohmic to space charge limited conduction (SCLC) after implantation. The surface conductivity of these implanted samples was found to increase with increasing implantation dose. The structural alterations in the Raman spectra of implanted PET samples indicate that such an increase in the conductivity may be attributed to the formation of conjugated double bonded carbonaceous structure in the implanted layer of PET.

Response times of Cassini/INCA > 5.2 keV ENAs and Voyager ions in the heliosheath over the solar cycle

Science.gov (United States)

Dialynas, K.; Krimigis, S. M.; Mitchell, D. G.; Decker, R. B.; Roelof, E. C.

2017-09-01

Both a magnetosphere-like tail and a bubble model of the heliosphere were posited by E. N. Parker in 1961. Recently, we showed that heliosheath ions are the source of > 5.2 keV Energetic Neutral Atoms (ENA), whose images of the heliosphere exhibit a rough nose to anti-nose (tail) global symmetry that resembles a diamagnetic bubble. The comparison between energetic neutral atom (ENA) global images of the helioshphere obtained with the Ion and Neutral Camera (INCA) on board Cassini and ions measured in-situ by the Low Energy Charged Particle experiment (LECP) on board Voyager 1 and 2 (V1/V2) in overlapping energy bands over an 11-year period shows that the heliosphere responds promptly, within ∼2-3 years, to outward propagating solar wind changes in both the nose and tail directions. Here we focus on the recovery of solar cycle 24 and the response times of > 5.2 keV ENAs to show that this ∼2-3-year time delay is consistent with a “tail” of ∼80-120 AU. This preliminary rough calculation is generally consistent with lower energy ENA data (E < 6 keV, from the IBEX-Lo and IBEX-Hi) and is supported by recent modelling of the heliosphere.

Characteristic effects of heavy ion irradiation on the rat brain

International Nuclear Information System (INIS)

Sun, X.Z.; Takahashi, S.; Kubota, Y.; Yoshida, S.; Takeda, H.; Zhang, R.; Fukui, Y.

2005-01-01

Heavy ion irradiation has the feature to administer a large radiation dose in the vicinity of the endpoint in the beam range, and its irradiation system and biophysical characteristics are different from ordinary irradiation instruments like X- or gamma-rays. Using this special feature, heavy ion irradiation has been applied for cancer treatment. The safety and efficacy of heavy ion irradiator have been demonstrated to a great extent. For instance, brain tumors treated by heavy-ion beams became smaller or disappearance. However, fundamental research related to such clinical phenotypes and their underlying mechanisms are little known. In order to clarify characteristic effects of heavy ion irradiation on the brain, we developed an experimental system for irradiating a restricted region of the rat brain using heavy ion beams. The characteristics of the heavy ion beams, histological, behavioral and elemental changes were studied in the rat following heavy ion irradiation. Adult male Sprague-Dawley rats, aged 12 weeks and weighing 260-340 g (Shizuoka Laboratory Animal Center, Hamamatsu, Japan) were used. Rats were deeply anesthetized 10-15 minutes before irradiation with ketamine (40 mg/kg) and xylazine (10 mg/kg), immobilized in a specifically designed jig, and irradiated with 290 MeV/nucleon charged carbon beams in a dorsal-to ventral direction, The left cerebral hemispheres of the brain were irradiated at doses of 100 Gy charged carbon particles. The depth-dose distribution of the heavy ion beams was modified to make a spread-out bragg peak of 5 mm wide with a range modulator. The characteristics of the heavy-ion beams (field and depth of the heavy-ion beams) were examined by a measuring paraffin section of rat brain at different thickness. That extensive necrosis was observed between 2.5 mm and 7.5 mm depth from the surface of the rat head, suggesting a relatively high dose and uniform dose was delivered among designed depths and the spread-out bragg peak used here

Study of ion-bombardment-induced surface topography of silver by stereophotogrammetric method

International Nuclear Information System (INIS)

Fayazov, I.M.; Sokolov, V.N.

1992-01-01

The ion-bombardment-induced surface topography of polycrystalline silver was studied using the stereophotogrammetric method. The samples were irradiated with 30keV argon ions at fairly high fluences (> 10 17 ions/cm 2 ). The influence of the inclination angle of the sample in the SEM on the cone shape of a SEM-picture is discussed. To analyse the irradiated surfaces covered with cones, the SEM-stereotechnique is proposed. The measurements of the sample section perpendicular to the incidence plane are also carried out. (author)

Ion energy distributions from laser-generated plasmas at two different intensities

Science.gov (United States)

Ceccio, Giovanni; Torrisi, Lorenzo; Okamura, Masahiro; Kanesue, Takeshi; Ikeda, Shunsuke

2018-01-01

Laser-generated non-equilibrium plasmas were analyzed at Brookhaven National Laboratory (NY, USA) and MIFT Messina University (Italy). Two laser intensities of 1012 W/cm2 and 109 W/cm2, have been employed to irradiate Al and Al with Au coating targets in high vacuum conditions. Ion energy distributions were obtained using electrostatic analyzers coupled with ion collectors. Time of flight measurements were performed by changing the laser irradiation conditions. The study was carried out to provide optimum keV ions injection into post acceleration systems. Possible applications will be presented.

Solar Cycle dependence of 5-55 keV Cassini/INCA energetic neutral atom (ENA) images of the Heliosheath and in situ Voyager/LECP ion measurements

Science.gov (United States)

Krimigis, S. M.; Dialynas, K.; Mitchell, D. G.; Decker, R. B.; Roelof, E. C.

2015-12-01

The heliosheath has been identified as the most probable source of ENAs that INCA detects but its variability due to solar activity throughout the solar cycle (SC) has not been resolved to date. We show all-sky, 5-55 keV ENA H maps from the year 2003 to 2014 and compare the solar cycle variation of the ENAs in both the heliospheric nose (upstream) and anti-nose (downstream) directions with the > 30 keV ions measured within the heliosheath by the Low Energy Charged Particle (LECP) detector on Voyagers 1, 2 (V1, V2) where we measure protons in overlapping energy bands ~30-55 keV. We find that a) Toward the anti-nose direction the ENA-H intensities decline during SC23, i.e. after 2003 ENA intensities decreased by ~ x2 at all energies by the end of year 2011, ~1 year after the observed minimum in solar activity; b) This ENA decrease (5.2-55 keV) during 2009-2011 is consistent with the concurrent intensity decrease of the > 30 keV ions (by a factor of 2-3) observed in situ by V1 and V2 in the heliosheath; c) Toward the nose direction, minimum intensities in both INCA ENAs and the V2 ions at E > 28 keV occur during the year 2013, with a subsequent recovery from 2014 to date (by a factor of ~2 in the > 35 keV ENA data). These quantitative correlations between the decreases of INCA ENAs (in both the heliospheric nose and anti-nose directions) and the in situ V1 and V2 ion measurements (separated by > 130 AU) during the declining phase of SC23, along with their concurrent jointly shared recoveries at the onset of SC24, imply that: 1) the 5-55 keV ENAs are produced in the heliosheath (because their transit times over 100 AU are less than a few months at energies > 40 keV), thus proving that our ENA observations can provide the ground truth for constructing comprehensive global heliosphere models; 2) the global heliosheath responds promptly (within ~1-1.5 yrs) to outward-propagating solar wind changes throughout the solar cycle.

In situ transmission electron microscope studies of ion irradiation-induced and irradiation-enhanced phase changes

International Nuclear Information System (INIS)

Allen, C.W.

1992-01-01

Motivated at least initially by materials needs for nuclear reactor development, extensive irradiation effects studies employing transmission electron microscopes (TEM) have been performed for several decades, involving irradiation-induced and irradiation-enhanced microstructural changes, including phase transformations such as precipitation, dissolution, crystallization, amorphization, and order-disorder phenomena. From the introduction of commercial high voltage electron microscopes (HVEM) in the mid-1960s, studies of electron irradiation effects have constituted a major aspect of HVEM application in materials science. For irradiation effects studies two additional developments have had particularly significant impact; the development of TEM specimen holder sin which specimen temperature can be controlled in the range 10-2200 K and the interfacing of ion accelerators which allows in situ TEM studies of irradiation effects and the ion beam modification of materials within this broad temperature range. This paper treats several aspects of in situ studies of electron and ion beam-induced and enhanced phase changes and presents two case studies involving in situ experiments performed in an HVEM to illustrate the strategies of such an approach of the materials research of irradiation effects

Amorphous molecular junctions produced by ion irradiation on carbon nanotubes

International Nuclear Information System (INIS)

Wang Zhenxia; Yu Liping; Zhang Wei; Ding Yinfeng; Li Yulan; Han Jiaguang; Zhu Zhiyuan; Xu Hongjie; He Guowei; Chen Yi; Hu Gang

2004-01-01

Experiments and molecular dynamics have demonstrated that electron irradiation could create molecular junctions between crossed single-wall carbon nanotubes. Recently molecular dynamics computation predicted that ion irradiation could also join single-walled carbon nanotubes. Employing carbon ion irradiation on multi-walled carbon nanotubes, we find that these nanotubes evolve into amorphous carbon nanowires, more importantly, during the process of which various molecular junctions of amorphous nanowires are formed by welding from crossed carbon nanotubes. It demonstrates that ion-beam irradiation could be an effective way not only for the welding of nanotubes but also for the formation of nanowire junctions

Corrosion characteristics of Hastelloy N alloy after He+ ion irradiation

International Nuclear Information System (INIS)

Lin Jianbo; Yu Xiaohan; Li Aiguo; He Shangming; Cao Xingzhong; Wang Baoyi; Li Zhuoxin

2014-01-01

With the goal of understanding the invalidation problem of irradiated Hastelloy N alloy under the condition of intense irradiation and severe corrosion, the corrosion behavior of the alloy after He + ion irradiation was investigated in molten fluoride salt at 700 °C for 500 h. The virgin samples were irradiated by 4.5 MeV He + ions at room temperature. First, the virgin and irradiated samples were studied using positron annihilation lifetime spectroscopy (PALS) to analyze the influence of irradiation dose on the vacancies. The PALS results showed that He + ion irradiation changed the size and concentration of the vacancies which seriously affected the corrosion resistance of the alloy. Second, the corroded samples were analyzed using synchrotron radiation micro-focused X-ray fluorescence, which indicated that the corrosion was mainly due to the dealloying of alloying element Cr in the matrix. Results from weight-loss measurement showed that the corrosion generally correlated with the irradiation dose of the alloy. (author)

Oxide glass structure evolution under swift heavy ion irradiation

International Nuclear Information System (INIS)

Mendoza, C.; Peuget, S.; Charpentier, T.; Moskura, M.; Caraballo, R.; Bouty, O.; Mir, A.H.; Monnet, I.; Grygiel, C.; Jegou, C.

2014-01-01

Highlights: • Structure of SHI irradiated glass is similar to the one of a hyper quenched glass. • D2 Raman band associated to 3 members ring is only observed in irradiated glass. • Irradiated state seems slightly different to an equilibrated liquid quenched rapidly. - Abstract: The effects of ion tracks on the structure of oxide glasses were examined by irradiating a silica glass and two borosilicate glass specimens containing 3 and 6 oxides with krypton ions (74 MeV) and xenon ions (92 MeV). Structural changes in the glass were observed by Raman and nuclear magnetic resonance spectroscopy using a multinuclear approach ( 11 B, 23 Na, 27 Al and 29 Si). The structure of irradiated silica glass resembles a structure quenched at very high temperature. Both borosilicate glass specimens exhibited depolymerization of the borosilicate network, a lower boron coordination number, and a change in the role of a fraction of the sodium atoms after irradiation, suggesting that the final borosilicate glass structures were quenched from a high temperature state. In addition, a sharp increase in the concentration of three membered silica rings and the presence of large amounts of penta- and hexacoordinate aluminum in the irradiated 6-oxide glass suggest that the irradiated glass is different from a liquid quenched at equilibrium, but it is rather obtained from a nonequilibrium liquid that is partially relaxed by very rapid quenching within the ion tracks

Rapid thermal and swift heavy ion induced annealing of Co ion implanted GaN films

International Nuclear Information System (INIS)

Baranwal, V.; Pandey, A. C.; Gerlach, J. W.; Rauschenbach, B.; Karl, H.; Kanjilal, D.; Avasthi, D. K.

2008-01-01

Thin epitaxial GaN films grown on 6H-SiC(0001) substrates were implanted with 180 keV Co ions at three different fluences. As-implanted samples were characterized with secondary ion mass spectrometry and Rutherford backscattering spectrometry to obtain the Co depth profiles and the maximum Co concentrations. As-implanted samples were annealed applying two different techniques: rapid thermal annealing and annealing by swift heavy ion irradiation. Rapid thermal annealing was done at two temperatures: 1150 deg. C for 20 s and 700 deg. C for 5 min. 200 MeV Ag ions at two fluences were used for annealing by irradiation. Crystalline structure of the pristine, as-implanted, and annealed samples was investigated using x-ray diffraction, and the results were compared. Improvement of the crystalline quality was observed for rapid thermal annealed samples at the higher annealing temperature as confirmed with rocking curve measurements. The results indicate the presence of Co clusters in these annealed samples. Swift heavy ion irradiation with the parameters chosen for this study did not lead to a significant annealing

Origin of Si(LMM) Auger Electron Emission from Silicon and Si-Alloys by keV Ar+ Ion Bombardment

Science.gov (United States)

Iwami, Motohiro; Kim, Su Chol; Kataoka, Yoshihide; Imura, Takeshi; Hiraki, Akio; Fujimoto, Fuminori

1980-09-01

Si(LMM) Auger electrons emitted from specimens of pure silicon and several Si-alloys (Ni-Si, Pd-Si and Cu-Si) under keV Ar+ ion bombardment, were examined. In the Auger spectra from all specimens studied there were four peaks at energies of 92, 86, 76 and 66 eV. The Auger signal intensity varied considerably with both the incident angle and the energy of the primary ion beam. It is proposed that the Auger electrons are emitted from silicon atoms (or ions) just beneath the specimen surface but free from the bulk network.

Effect of preliminary neutron irradiation on helium blistering of 0Kh16N15M3B steel

International Nuclear Information System (INIS)

Chernov, I.I.; Kalin, B.A.; Skorov, D.M.; Shishkin, G.N.; Ivanov, M.V.

1982-01-01

The method of electron microscopy has been applied to investigate the effect of preliminary neutron irradiation on the OKh16N15M3B steel blistering under irradiation by 20 keV helium ions with (1-10)x10 21 ion/m 2 doses at the temperature below 373 K. It is shown that neutron irradiation shifts critical doses of blister formation and intense scaling towards higher doses. But after the incubation period the erosion of steel preliminary neutron irradiated grows with the increase of helium ion dose above 7x10 21 ion/m 2 . Short-term heating of neutron irradiated samples during 15 min at 1173 K does not practically affect the beginning of intense scaling of the surface

Construction plan of ion irradiation facility in JAERI

International Nuclear Information System (INIS)

Tanaka, Ryuichi

1987-01-01

The Takasaki Radiation Chemistry Research Establishment of Japan Atomic Energy Research Institute (JAERI) started the construction of an ion irradiation facility to apply ion beam to the research and development of radiation resistant materials for severe environment, the research on biotechnology and new functional materials. This project was planned as ion beam irradiation becomes an effective means for the research on fundamental physics and advanced technology, and the national guideline recently emphasizes the basic and pioneering field in research and development. This facility comprises an AVF cyclotron with an ECR ion source (maximum proton energy: 90 MeV), a 3 MV tandem accelerator, a 3 MV single end type Van de Graaf accelerator and a 400 kV ion implanter. In this report, the present status of planning the accelerators and the facility to be constructed, the outline of research plan, the features of the accelerators, and the beam characteristics are described. In this project, the research items are divided into the materials for space environment, the materials for nuclear fusion reactors, biotechnology, new functional materials, and ion beam technology. The ion beams required for the facility are microbeam, pulsed beam, multiple beam, neutron beam and an expanded irradiation field. (Kako, I.)

Ion irradiation synthesis of Ag–Au bimetallic nanospheroids in SiO{sub 2} glass substrate with tunable surface plasmon resonance frequency

Energy Technology Data Exchange (ETDEWEB)

Meng, Xuan; Yu, Ruixuan; Takayanagi, Shinya [Graduate School of Engineering, Hokkaido University, Sapporo, Hokkaido 060–8628 (Japan); Shibayama, Tamaki; Watanabe, Seiichi [Center for Advanced Research of Energy and Materials, Faculty of Engineering, Hokkaido University, Sapporo, Hokkaido 060–8628 (Japan)

2013-08-07

Ag–Au bimetallic nanospheroids with tunable localized surface plasmon resonance (LSPR) were synthesized by 100 keV Ar–ion irradiation of 30 nm Ag–Au bimetallic films deposited on SiO{sub 2} glass substrates. A shift of the LSPR peaks toward shorter wavelengths was observed up to an irradiation fluence of 1.0 × 10{sup 17} cm{sup −2}, and then shifted toward the longer wavelength because of the increase of fragment volume under ion irradiation. Further control of LSPR frequency over a wider range was realized by modifying the chemical components. The resulting LSPR frequencies lie between that of the pure components, and an approximate linear shift of the LSPR toward the longer wavelength with the Au concentration was achieved, which is in good agreement with the theoretical calculations based on Gans theory. In addition, the surface morphology and compositions were examined with a scanning electron microscope equipped with an energy dispersive spectrometer, and microstructural characterizations were performed using a transmission electron microscope. The formation of isolated photosensitive Ag–Au nanospheroids with a FCC structure partially embedded in the SiO{sub 2} substrate was confirmed, which has a potential application in solid-state devices.

Influence of high energy ion irradiation on fullerene derivative (PCBM) thin films

Energy Technology Data Exchange (ETDEWEB)

Sharma, Trupti, E-mail: tsphy91@gmail.com [Department of Physics, Malaviya National Institute of Technology, Jaipur 302017 (India); Singhal, Rahul; Vishnoi, Ritu [Department of Physics, Malaviya National Institute of Technology, Jaipur 302017 (India); Lakshmi, G.B.V.S. [Inter University Accelerator Centre, Post Box No. 10502, New Delhi 110067 (India); Biswas, S.K. [Department of Metallurgical and Materials Engineering, Malaviya National Institute of Technology, Jaipur 302017 (India)

2017-04-01

Highlights: • Spin casted PCBM thin films (∼100 nm) are irradiated with 55 MeV Si{sup 4+} ion beam. • The decrease in band gap is observed after irradiation. • The surface properties is also dependent on incident ion fluences. • Polymerization reactions induced by energetic ions leads to modifications. - Abstract: The modifications produced by 55 MeV Si{sup 4+} swift heavy ion irradiation on the phenyl C{sub 61} butyric acid methyl ester (PCBM) thin films (thickness ∼ 100 nm) has been enlightened. The PCBM thin films were irradiated at 1 × 10{sup 10}, 1 × 10{sup 11} and 1 × 10{sup 12} ions/cm{sup 2} fluences. After ion irradiation, the decreased optical band gap and FTIR band intensities were observed. The Raman spectroscopy reveals the damage produced by energetic ions. The morphological variation were investigated by atomic force microscopy and contact angle measurements and observed to be influenced by incident ion fluences. After 10{sup 11} ions/cm{sup 2} fluence, the overlapping of ion tracks starts and produced overlapping effects.

Low energy helium ion irradiation induced nanostructure formation on tungsten surface

International Nuclear Information System (INIS)

Al-Ajlony, A.; Tripathi, J.K.; Hassanein, A.

2017-01-01

We report on the low energy helium ion irradiation induced surface morphology changes on tungsten (W) surfaces under extreme conditions. Surface morphology changes on W surfaces were monitored as a function of helium ion energy (140–300 eV), fluence (2.3 × 10 24 –1.6 × 10 25 ions m −2 ), and flux (2.0 × 10 20 –5.5 × 10 20 ion m −2 s −1 ). All the experiments were performed at 900° C. Our study shows significant effect of all the three ion irradiation parameters (ion flux, fluence, and energy) on the surface morphology. However, the effect of ion flux is more pronounced. Variation of helium ion fluence allows to capture the very early stages of fuzz growth. The observed fuzz growth and morphology changes were understood in the realm of various possible phenomena. The study has relevance and important impact in the current and future nuclear fusion applications. - Highlights: •Reporting formation of W nanostructure (fuzz) due to low energy He ion beam irradiation. •Observing the very early stages for the W-Fuzz formation. •Tracking the surface morphological evolution during the He irradiation. •Discussing in depth our observation and drawing a possible scenario that explain this phenomenon. •Studying various ions irradiation parameters such as flux, fluence, and ions energy.

Application of heavy-ion microbeam system at Kyoto University: Energy response for imaging plate by single ion irradiation

International Nuclear Information System (INIS)

Tosaki, M.; Nakamura, M.; Hirose, M.; Matsumoto, H.

2011-01-01

A heavy-ion microbeam system for cell irradiation has been developed using an accelerator at Kyoto University. We have successfully developed proton-, carbon-, fluorine- and silicon-beams in order to irradiate a micro-meter sized area with ion counting, especially single ion irradiation. In the heavy-ion microbeam system, an imaging plate (IP) was utilized for beam diagnostics on the irradiation. The IP is widely used for radiography studies in biology. However, there are a few studies on the low linear energy transfer (LET) by single ions, i.e., low-intensity exposure. Thus we have investigated the energy response for the IP, which can be utilized for microbeam diagnostics.

Origins of ion irradiation-induced Ga nanoparticle motion on GaAs surfaces

International Nuclear Information System (INIS)

Kang, M.; Wu, J. H.; Chen, H. Y.; Thornton, K.; Goldman, R. S.; Sofferman, D. L.; Beskin, I.

2013-01-01

We have examined the origins of ion irradiation-induced nanoparticle (NP) motion. Focused-ion-beam irradiation of GaAs surfaces induces random walks of Ga NPs, which are biased in the direction opposite to that of ion beam scanning. Although the instantaneous NP velocities are constant, the NP drift velocities are dependent on the off-normal irradiation angle, likely due to a difference in surface non-stoichiometry induced by the irradiation angle dependence of the sputtering yield. It is hypothesized that the random walks are initiated by ion irradiation-induced thermal fluctuations, with biasing driven by anisotropic mass transport

Colloidal assemblies modified by ion irradiation

NARCIS (Netherlands)

Snoeks, E.; Blaaderen, A. van; Dillen, T. van; Kats, C.M. van; Velikov, K.P.; Brongersma, M.L.; Polman, A.

2001-01-01

Spherical SiO2 and ZnS colloidal particles show a dramatic anisotropic plastic deformation under 4 MeV Xe ion irradiation, that changes their shape into oblate into oblate ellipsional, with an aspect ratio that can be precisely controlled by the ion fluence. The 290 nm and 1.1 um diameter colloids

Tuning the shape and damage in ion-beam induced ripples on silicon

Energy Technology Data Exchange (ETDEWEB)

Biermanns, Andreas; Pietsch, Ullrich [Universitaet Siegen, Festkoerperphysik, 57068 Siegen (Germany); Hanisch, Antje; Grenzer, Joerg [Helmholtz-Zentrum Dresden-Rossendorf, Institut fuer Ionenstrahlphysik und Materialforschung, P.O. Box 510119, 01314 Dresden (Germany); Metzger, Till Hartmut [ESRF, 6 rue Jules Horowitz, BP220, 38043 Grenoble Cedex (France)

2011-11-15

We investigate the influence of ion beam parameters on the ripple formation on Si(001) surfaces after bombardment with Xe{sup +} ions of 25 keV kinetic energy using a scanning ion beam system. By combining grazing incidence X-ray diffraction, small angle scattering and X-ray reflectivity, we show that during ion irradiation with 70 off-normal angle of incidence, changing the size of the irradiated area leads to an increased number of defects at the interface towards crystalline material. At 65 angle of incidence, the ripple amplitude grows. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Ion irradiation studies of oxide ceramics

International Nuclear Information System (INIS)

Zinkle, S.J.

1988-01-01

This paper presents the initial results of an investigation of the depth-dependent microstructures of three oxide ceramics following ion implantation to moderate doses. The implantations were performed using ion species that occur as cations in the target material; for example, Mg + ions were used for MgO and MgAl 2 O 4 (spinel) irradiations. This minimized chemical effects associated with the implantation and allowed a more direct evaluation to be made of the effects of implanted ions on the microstructure. 11 refs., 14 figs

Effect of ion beam irradiation of fresh-keeping of strawberry

International Nuclear Information System (INIS)

Lei Qing; Huang Min; Wu Ling; Mo Yan; Du Xiaoying; Xie Yan; Wang Yan; Gao Peng; Kang Ju

2011-01-01

Effects of ion beam irradiation on strawberry quality were studied, in this study and microbial biomass, decay index, weight loss and biological index were detected. Irradiation dosage were 1.0, 2.0 and 3.0 kGy. The results showed that the irradiation decreased the number of microorganism in the strawberry and delayed the rotten speed. The soluble solide, Vc and total acid content of irradiated strawberry reduced slower than that of control. It indicated that the irradiation dosage did not affect the quality of strawberry in this study . Therefore, 2.0 ∼ 3.0 kGy of ion beam irradiation were an excellent irradiation dosage for strawberry preservation. (authors)

Progress and tendency in heavy ion irradiation mutation breeding

International Nuclear Information System (INIS)

Zhou Libin; Li Wenjian; Qu Ying; Li Ping

2008-01-01

In recent years, the intermediate energy heavy ion biology has been concerned rarely comparing to that of the low-energy ions. In this paper, we summarized the advantage of a new mutation breeding method mediated by intermediate energy heavy ion irradiations. Meanwhile, the present state of this mutation technique in applications of the breeding in grain crops, cash crops and model plants were introduced. And the preview of the heavy ion irradiations in gene-transfer, molecular marker assisted selection and spaceflight mutation breeding operations were also presented. (authors)

1.2 MeV/amu Xe ion induced damage recovery in SiC

International Nuclear Information System (INIS)

O’Connell, J.H.; Skuratov, V.A.; Sohatsky, A.S.; Neethling, J.H.

2014-01-01

The microstructural changes of 4H-SiC samples dual irradiated with either low energy He (10 keV) or Ti (220 keV) and high energy (167 MeV) Xe ions has been studied using cross-sectional transmission electron microscopy. It was found that xenon ions with fluences above 10 13 cm −2 restore crystallinity in a heavily damaged partially amorphous zone. No significant damage recovery was observed in fully amorphized layers of silicon carbide apart from a 5% reduction in the amorphous layer thickness

New cultivar produced by heavy-ion beam irradiation

Energy Technology Data Exchange (ETDEWEB)

Kanaya, Takeshi; Miyazaki, Kiyoshi; Suzuki, Kenichi; Iwaki, Kazunari [Suntory Flowers Ltd., Higashiomi, Shiga (Japan); Ichida, Hiroyuki; Hayashi, Yoriko; Saito, Hiroyuki; Ryuto, Hiromichi; Fukunishi, Nobuhisa; Abe, Tomoko [RIKEN, Nishina Center, Wako, Saitama (Japan)

2007-03-15

The RIKEN accelerator research facility (RARF) is the one of the biggest facilities to accelerate heavy ions in all over the world since 1986. We started our trials in plant breeding since 1993. Soon we found that the ion beam is highly effective in the cause of mutagenesis of tobacco embryos during the fertilization without damage to other plant tissue. RIKEN and Suntory Flowers Ltd. have jointly developed some new ornamental varieties of Verbena and Petunia using ion-beam irradiation. We already put 5 new flower cultivars on the market in Japan, USA, Canada and EU since 2002. We report here a new variety of Torenia obtained by ion-beam irradiation. (author)

New cultivar produced by heavy-ion beam irradiation

International Nuclear Information System (INIS)

Kanaya, Takeshi; Miyazaki, Kiyoshi; Suzuki, Kenichi; Iwaki, Kazunari; Ichida, Hiroyuki; Hayashi, Yoriko; Saito, Hiroyuki; Ryuto, Hiromichi; Fukunishi, Nobuhisa; Abe, Tomoko

2007-01-01

The RIKEN accelerator research facility (RARF) is the one of the biggest facilities to accelerate heavy ions in all over the world since 1986. We started our trials in plant breeding since 1993. Soon we found that the ion beam is highly effective in the cause of mutagenesis of tobacco embryos during the fertilization without damage to other plant tissue. RIKEN and Suntory Flowers Ltd. have jointly developed some new ornamental varieties of Verbena and Petunia using ion-beam irradiation. We already put 5 new flower cultivars on the market in Japan, USA, Canada and EU since 2002. We report here a new variety of Torenia obtained by ion-beam irradiation. (author)

Biological effect of 20 keV N+ ion implantation on Stevia rebaudianum

International Nuclear Information System (INIS)

Su Tingting; Yang Tingting; Ji Guohong; Xiang Xingjia; Chen Xuetao; Wang Yu; Wu Yaojin

2010-01-01

The germinability and gemination rate of Stevia rebaudianum seeds implanted with 20 keV N + ions in doses of 0 (CK), 100 x 2500, 400 x 2500 and 1000 x 2500 N + /cm 2 were studied by analyzing the differences in seed germinability and gemination rate between the groups. By statistical analysis, the germinability and gemination rate were affected at the level of α=0.05 by the implantation dose. The results showed that the germinability and gemination rate increased with the dose first and then decreased. At 400 x 2500 N + /cm 2 , the seeds had the largest germinability and the gemination rate. (authors)

Enhancement of optical absorption of Si (100) surfaces by low energy N+ ion beam irradiation

Science.gov (United States)

Bhowmik, Dipak; Karmakar, Prasanta

2018-05-01

The increase of optical absorption efficiency of Si (100) surface by 7 keV and 8 keV N+ ions bombardment has been reported here. A periodic ripple pattern on surface has been observed as well as silicon nitride is formed at the ion impact zones by these low energy N+ ion bombardment [P. Karmakar et al., J. Appl. Phys. 120, 025301 (2016)]. The light absorption efficiency increases due to the presence of silicon nitride compound as well as surface nanopatterns. The Atomic Force Microscopy (AFM) study shows the formation of periodic ripple pattern and increase of surface roughness with N+ ion energy. The enhancement of optical absorption by the ion bombarded Si, compared to the bare Si have been measured by UV - visible spectrophotometer.

Ion beam irradiation effects in strontium zirconium phosphate with NZP-structure type

International Nuclear Information System (INIS)

Gregg, Daniel J.; Karatchevtseva, Inna; Thorogood, Gordon J.; Davis, Joel; Bell, Benjamin D.C.; Jackson, Matthew; Dayal, Pranesh; Ionescu, Mihail; Triani, Gerry; Short, Ken; Lumpkin, Gregory R.; Vance, Eric R.

2014-01-01

Ceramics with the sodium zirconium phosphate or NZP type structure have potential as nuclear waste form and inert matrix materials. For both applications the material will be subjected to self-radiation damage from α-decay of the incorporated actinides. In this study, ion-beam irradiation using Au- and He-ions has been used to simulate the consequences of α-decay and the effects of irradiation on the structural and macroscopic properties (density and hardness) have been investigated. Irradiation by Au-ions resulted in a significant volume contraction of ∼7%, a reduction in hardness of ∼30% and a loss in long-range order at fluences above 10 14 Au-ions/cm 2 . In contrast, little effect on the material properties was noted for samples irradiated with He-ions up to a fluence of 10 17 ions/cm 2 . Thermal annealing was investigated for the highest fluence Au-ion irradiated sample and significant decomposition was observed

Radiation effects in zinc oxide: zinc under bombardment with KeV ions

International Nuclear Information System (INIS)

Hastings, J.W.L.

1967-01-01

The energy loss, light output, depth of deterioration and the deterioration constant have been determined as a function of energy for various atomic projectiles impinging upon samples of a powdered Zn:Zn phosphor at energies below 105 KeV. The energy loss was observed as a reduction in the light output when projectiles traversed thin regions of previously damaged phosphor. The energy losses for heavier projectiles ( 14 N, 40 Ar, 84 Kr), relative to hydrogen, were found to be lower than those predicted for an amorphous stopping medium. The light output for a given projectile was found to be approximately proportional to the amount of energy lost in electronic collisions. When a phosphor is subjected to prolonged bombardment by heavy ions the deterioration depth is fairly well defined and its value was determined by a measurement of the energy loss of a hydrogen beam in traversing the damaged region. The depths are very large, are proportional to the projectile velocity and seem to be determined to a significant degree by electronic stopping. The deterioration constant, C, is a measure of the ability of a projectile to deteriorate a phosphor and its value is proportional to the number of defects introduced in unit distance along the trajectory of the projectile. The constant was determined from measurements of the efficiencies η, and η o , of partly damaged and undamaged phosphor, respectively, using the observed relationship, C (η/η o - 1) n -1 where n is the irradiation dose. The relative magnitudes of the C values for 14 N, 40 Ar were found to be in agreement with measured nuclear energy loss cross sections for these projectiles. (author)

Low energy helium ion irradiation induced nanostructure formation on tungsten surface

Energy Technology Data Exchange (ETDEWEB)

Al-Ajlony, A., E-mail: montaserajlony@yahoo.com; Tripathi, J.K.; Hassanein, A.

2017-05-15

We report on the low energy helium ion irradiation induced surface morphology changes on tungsten (W) surfaces under extreme conditions. Surface morphology changes on W surfaces were monitored as a function of helium ion energy (140–300 eV), fluence (2.3 × 10{sup 24}–1.6 × 10{sup 25} ions m{sup −2}), and flux (2.0 × 10{sup 20}–5.5 × 10{sup 20} ion m{sup −2} s{sup −1}). All the experiments were performed at 900° C. Our study shows significant effect of all the three ion irradiation parameters (ion flux, fluence, and energy) on the surface morphology. However, the effect of ion flux is more pronounced. Variation of helium ion fluence allows to capture the very early stages of fuzz growth. The observed fuzz growth and morphology changes were understood in the realm of various possible phenomena. The study has relevance and important impact in the current and future nuclear fusion applications. - Highlights: •Reporting formation of W nanostructure (fuzz) due to low energy He ion beam irradiation. •Observing the very early stages for the W-Fuzz formation. •Tracking the surface morphological evolution during the He irradiation. •Discussing in depth our observation and drawing a possible scenario that explain this phenomenon. •Studying various ions irradiation parameters such as flux, fluence, and ions energy.

Shift of localized surface plasmon resonance by Ar-ion irradiation of Ag–Au bimetallic films deposited on Al{sub 2}O{sub 3} single crystals

Energy Technology Data Exchange (ETDEWEB)

Meng, Xuan [Graduate School of Engineering, Hokkaido University, Sapporo, Hokkaido 060-8628 (Japan); Shibayama, Tamaki, E-mail: shiba@qe.eng.hokudai.ac.jp [Center for Advanced Research of Energy and Materials, Faculty of Engineering, Hokkaido University, Kita-13, Nishi-8, Kita-ku, Sapporo, Hokkaido 060-8628 (Japan); Yu, Ruixuan; Takayanagi, Shinya [Graduate School of Engineering, Hokkaido University, Sapporo, Hokkaido 060-8628 (Japan); Watanabe, Seiichi [Center for Advanced Research of Energy and Materials, Faculty of Engineering, Hokkaido University, Kita-13, Nishi-8, Kita-ku, Sapporo, Hokkaido 060-8628 (Japan)

2013-11-01

Effects of Ar-ion induced surface nanostructuring were studied using 100 keV Ar-ion irradiation of 30 nm Ag–Au bimetallic films deposited on Al{sub 2}O{sub 3} single crystals, under irradiation fluences ranging from 5.0 × 10{sup 15} cm{sup −2} to 6.3 × 10{sup 16} cm{sup −2}. Scanning electron microscope was used to study the ion-beam-induced surface nanostructuring. As the irradiation fluence increased, dewetting of the bimetallic films on the Al{sub 2}O{sub 3} substrate was observed, and formation of isolated Ag–Au nanostructures sustained on the substrate were obtained. Next, thermal annealing was performed under high vacuum at 1073 K for 2 h; a layer of photosensitive Ag–Au alloy nanoballs partially embedded in the Al{sub 2}O{sub 3} substrate was obtained when higher fluence irradiation (>3.8 × 10{sup 16} cm{sup −2}) was used. The microstructures of the nanoballs were investigated using a transmission electron microscope, and the nanoballs were found to be single crystals with a FCC structure. In addition, photoabsorption spectra were measured, and localized surface plasmon resonance peaks were observed. With increase in the irradiation fluence, the size of the Ag–Au nanoballs on the substrate decreased, and a blue-shift of the LSPR peaks was observed. Further control of the LSPR frequency over a wide range was achieved by modifying the chemical components, and a red-shift of the LSPR peaks was observed as the Au concentration increased. In summary, ion irradiation is an effective approach toward surface nanostructuring, and the nanocomposites obtained have potential applications in optical devices.

Biological effects of N+ ion implantation and UV radiation on streptomyces albus

International Nuclear Information System (INIS)

Wu Jian; Dai Guifu

2005-01-01

The results of both 30 keV N + ion implantation and UV irradiation of Streptomyces albus showed complicate biological effects. The 'saddle shape' pattern of the dose-dependent curve formed by N + ion implantation with low energy was studied, and it proved that vacuum was not the reason, and the fact, the 'saddle shape' curve may be regarded as a HRS/IRR (hyper-radiosensitivity/increased radiaoresistance) effect caused by low dose irradiation. But Streptomyces albus UV irradiated after vacuum treatment only showed IRR effect or hormesis (survival rate >100%). The streptomycin resistance mutation of Streptomyces albus caused by low energy N + ion implantation and UV irradiation was also studied. the results showed that UV radiation is one effective means for streptomyces albus breeding. (authors)

Magnetic patterning by means of ion irradiation and implantation

International Nuclear Information System (INIS)

Fassbender, J.; McCord, J.

2008-01-01

A pure magnetic patterning by means of ion irradiation which relies on a local modification of the magnetic anisotropy of a magnetic multilayer structure has been first demonstrated in 1998. Since then also other magnetic properties like the interlayer exchange coupling, the exchange bias effect, the magnetic damping behavior and the saturation magnetization to name a few have also been demonstrated to be affected by ion irradiation or ion implantation. Consequently, all these effects can be used if combined with a masking technique or employing direct focused ion beam writing for a magnetic patterning and thus an imprinting of an artificial magnetic domain structure, which subsequently modifies the integral magnetization reversal behavior or the magnetization dynamics of the film investigated. The present review will summarize how ion irradiation and implantation can affect the magnetic properties by means of structural modifications. The main part will cover the present status with respect to the pure magnetic patterning of micro- and nano structures

Luminescence imaging of water during carbon-ion irradiation for range estimation

Energy Technology Data Exchange (ETDEWEB)

Yamamoto, Seiichi, E-mail: s-yama@met.nagoya-u.ac.jp; Komori, Masataka; Koyama, Shuji; Morishita, Yuki; Sekihara, Eri [Radiological and Medical Laboratory Sciences, Nagoya University Graduate School of Medicine, Higashi-ku, Nagoya, Aichi 461-8673 (Japan); Akagi, Takashi; Yamashita, Tomohiro [Hygo Ion Beam Medical Center, Hyogo 679-5165 (Japan); Toshito, Toshiyuki [Department of Proton Therapy Physics, Nagoya Proton Therapy Center, Nagoya City West Medical Center, Aichi 462-8508 (Japan)

2016-05-15

Purpose: The authors previously reported successful luminescence imaging of water during proton irradiation and its application to range estimation. However, since the feasibility of this approach for carbon-ion irradiation remained unclear, the authors conducted luminescence imaging during carbon-ion irradiation and estimated the ranges. Methods: The authors placed a pure-water phantom on the patient couch of a carbon-ion therapy system and measured the luminescence images with a high-sensitivity, cooled charge-coupled device camera during carbon-ion irradiation. The authors also carried out imaging of three types of phantoms (tap-water, an acrylic block, and a plastic scintillator) and compared their intensities and distributions with those of a phantom containing pure-water. Results: The luminescence images of pure-water phantoms during carbon-ion irradiation showed clear Bragg peaks, and the measured carbon-ion ranges from the images were almost the same as those obtained by simulation. The image of the tap-water phantom showed almost the same distribution as that of the pure-water phantom. The acrylic block phantom’s luminescence image produced seven times higher luminescence and had a 13% shorter range than that of the water phantoms; the range with the acrylic phantom generally matched the calculated value. The plastic scintillator showed ∼15 000 times higher light than that of water. Conclusions: Luminescence imaging during carbon-ion irradiation of water is not only possible but also a promising method for range estimation in carbon-ion therapy.

Luminescence imaging of water during carbon-ion irradiation for range estimation

International Nuclear Information System (INIS)

Yamamoto, Seiichi; Komori, Masataka; Koyama, Shuji; Morishita, Yuki; Sekihara, Eri; Akagi, Takashi; Yamashita, Tomohiro; Toshito, Toshiyuki

2016-01-01

Purpose: The authors previously reported successful luminescence imaging of water during proton irradiation and its application to range estimation. However, since the feasibility of this approach for carbon-ion irradiation remained unclear, the authors conducted luminescence imaging during carbon-ion irradiation and estimated the ranges. Methods: The authors placed a pure-water phantom on the patient couch of a carbon-ion therapy system and measured the luminescence images with a high-sensitivity, cooled charge-coupled device camera during carbon-ion irradiation. The authors also carried out imaging of three types of phantoms (tap-water, an acrylic block, and a plastic scintillator) and compared their intensities and distributions with those of a phantom containing pure-water. Results: The luminescence images of pure-water phantoms during carbon-ion irradiation showed clear Bragg peaks, and the measured carbon-ion ranges from the images were almost the same as those obtained by simulation. The image of the tap-water phantom showed almost the same distribution as that of the pure-water phantom. The acrylic block phantom’s luminescence image produced seven times higher luminescence and had a 13% shorter range than that of the water phantoms; the range with the acrylic phantom generally matched the calculated value. The plastic scintillator showed ∼15 000 times higher light than that of water. Conclusions: Luminescence imaging during carbon-ion irradiation of water is not only possible but also a promising method for range estimation in carbon-ion therapy.

Early Stage of Deformation under Nanoindenter Tip of Ion-irradiated Single Crystals

International Nuclear Information System (INIS)

Shin, Chan Sun; Jin, Hyung Ha; Kwon, Jun Hyun

2010-01-01

Ion irradiation has been used for almost 40 years to emulate the effect of neutrons. Ion irradiation has a number of advantages in terms of time and expenses compared to neutron irradiation. Ion irradiation is expected to greatly contribute to the development of Fusion and Gen IV materials. Ions have short penetration depth, and they induce continuously varying dose rate over the penetration depth. Although it depends on the energy and species of incident ions, the depth of ion-irradiated region is in general on the order of a few micron meters. Depth controlled probing technique is required to measure the mechanical properties of ion-irradiated layer, and nanoindentation is widely used. During nanoindentation, a hard tip with known properties is pressed into a material which has unknown properties. The depth of penetration and load on the indenter are recorded during loading and unloading. The initial Loading depth curve follows the Hertzian elastic solution, and at a certain load, a sudden displacement excursion occurs in indenter depth and then hardening follows. This is called 'Pop-in' event, and since residual impression can be found only after pop-ins, the pop-in is regarded as the onset of plasticity. The objectives of this research are to investigate the effects of ion irradiation on popins, and to examine dislocation nucleation and propagation at the onset of plasticity by using MD simulations

Early Stage of Deformation under Nanoindenter Tip of Ion-irradiated Single Crystals

Energy Technology Data Exchange (ETDEWEB)

Shin, Chan Sun; Jin, Hyung Ha; Kwon, Jun Hyun [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of)

2010-10-15

Ion irradiation has been used for almost 40 years to emulate the effect of neutrons. Ion irradiation has a number of advantages in terms of time and expenses compared to neutron irradiation. Ion irradiation is expected to greatly contribute to the development of Fusion and Gen IV materials. Ions have short penetration depth, and they induce continuously varying dose rate over the penetration depth. Although it depends on the energy and species of incident ions, the depth of ion-irradiated region is in general on the order of a few micron meters. Depth controlled probing technique is required to measure the mechanical properties of ion-irradiated layer, and nanoindentation is widely used. During nanoindentation, a hard tip with known properties is pressed into a material which has unknown properties. The depth of penetration and load on the indenter are recorded during loading and unloading. The initial Loading depth curve follows the Hertzian elastic solution, and at a certain load, a sudden displacement excursion occurs in indenter depth and then hardening follows. This is called 'Pop-in' event, and since residual impression can be found only after pop-ins, the pop-in is regarded as the onset of plasticity. The objectives of this research are to investigate the effects of ion irradiation on popins, and to examine dislocation nucleation and propagation at the onset of plasticity by using MD simulations

Radiation-induced segregation and void formation in C+ ion-irradiated vanadium-carbon alloys

International Nuclear Information System (INIS)

Takeyama, T.; Ohnuki, S.; Takahashi, H.; Sato, Y.; Mochizuki, S.

1982-01-01

To clarify the effect of interstitial elements on radiation-induced segregation and void formation in V and V-C alloys irradiated by 200 keV C + ions to a dose of 48 dpa at 973 K, the microstructural observation and the measurement of C segregation to the surfaces were carried out by TEM and XPS. Voids, dislocations and precipitates were produced in all of the specimens during irradiation. The addition of C in V led to a reduction of void size and to increase in void number density, consequently the void swelling was suppressed strongly. Radiation-induced segregation of C was observed clearly on and near the irradiated surfaces of V-C alloys and as a result of the enrichment of C atoms, carbides precipitated on the surfaces. It is the first evidence of the radiation-induced segregation of interstitial elements on the surfaces. Also, quasi-carbides were observed on the (210) habit plaints near large voids and dislocations in V. The phenomena show that C atoms, which was insolved and/or implanted, interact strongly with vacancies rather than self-interstitial atoms and migrate with vacancies toward defect sinks, such as surfaces, voids, and dislocations. The segregated zones of C reduced the sink efficiency of the defects, and showed the effect of the suppression on void in V-C alloys. (author)

Ion-beam induced structure modifications in amorphous germanium

International Nuclear Information System (INIS)

Steinbach, Tobias

2012-01-01

Object of the present thesis was the systematic study of ion-beam induced structure modifications in amorphous germanium (a-Ge) layers due to low- (LEI) and high-energetic (SHI) ion irradiation. The LEI irradiation of crystalline Ge (c-Ge) effects because the dominating nuclear scattering of the ions on the solid-state atoms the formation of a homogeneous a-Ge Layer. Directly on the surface for fluences of two orders of magnitude above the amorphization fluence the formation of stable cavities independently on the irradiation conditions was observed. For the first time for the ion-beam induced cavity formation respectively for the steady expansion of the porous layer forming with growing fluence a linear dependence on the energy ε n deposed in nuclear processes was detected. Furthermore the formation of buried cavities was observed, which shows a dependence on the type of ions. While in the c-Ge samples in the range of the high electronic energy deposition no radiation defects, cavities, or plastic deformations were observed, the high electronic energy transfer in the 3.1 μm thick pre-amorphized a-Ge surface layers leads to the formation of randomly distributed cavities. Basing on the linear connection between cavity-induced vertical volume expansion and the fluence determined for different energy transfers for the first time a material-specific threshold value of ε e HRF =(10.5±1.0) kev nm -1 was determined, above which the ion-beam induced cavity formation in a-Ge sets on. The anisotropic plastic deformation of th a-Ge layer superposed at inclined SHI irradiation on the cavity formation was very well described by an equation derived from the viscoelastic Maxwell model, but modified under regardment of the experimental results. The positive deformation yields determined thereby exhibit above a threshold value for the ion-beam induced plastic deformation ε e S a =(12±2) keV nm -1 for the first time extracted for a Ge the characteristic linear behaviour of the

An ion beam deceleration lens for ultra-low-energy ion bombardment of naked DNA

Energy Technology Data Exchange (ETDEWEB)

Thopan, P.; Prakrajang, K. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thongkumkoon, P. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand); Suwannakachorn, D. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Yu, L.D., E-mail: yuldyuld@gmail.com [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand)

2013-07-15

Highlights: ► An ion beam deceleration lens was designed and constructed. ► The deceleration lens was installed and tested. ► The decelerated ion beam energy was measured using an electrical field. ► Decelerated ultra-low-energy ion beam bombarded naked DNA. ► Ion beam with energy of a few tens of eV could break DNA strands. -- Abstract: Study of low-energy ion bombardment effect on biological living materials is of significance. High-energy ion beam irradiation of biological materials such as organs and cells has no doubt biological effects. However, ion energy deposition in the ion-bombarded materials dominantly occurs in the low-energy range. To investigate effects from very-low-energy ion bombardment on biological materials, an ion beam deceleration lens is necessary for uniform ion energy lower than keV. A deceleration lens was designed and constructed based on study of the beam optics using the SIMION program. The lens consisted of six electrodes, able to focus and decelerate primary ion beam, with the last one being a long tube to obtain a parallel uniform exiting beam. The deceleration lens was installed to our 30-kV bioengineering-specialized ion beam line. The final decelerated-ion energy was measured using a simple electrostatic field to bend the beam to range from 10 eV to 1 keV controlled by the lens parameters and the primary beam condition. In a preliminary test, nitrogen ion beam at 60 eV decelerated from a primary 20-keV beam bombarded naked plasmid DNA. The original DNA supercoiled form was found to change to relaxed and linear forms, indicating single or double strand breaks. The study demonstrated that the ion bombardment with energy as low as several-tens eV was possible to break DNA strands and thus potential to cause genetic modification of biological cells.