A specialized bioengineering ion beam line

International Nuclear Information System (INIS)

Yu, L.D.; Sangyuenyongpipat, S.; Sriprom, C.; Thongleurm, C.; Suwanksum, R.; Tondee, N.; Prakrajang, K.; Vilaithong, T.; Brown, I.G.; Wiedemann, H.

2007-01-01

A specialized bioengineering ion beam line has recently been completed at Chiang Mai University to meet rapidly growing needs of research and application development in low-energy ion beam biotechnology. This beam line possesses special features: vertical main beam line, low-energy (30 keV) ion beams, double swerve of the beam, a fast pumped target chamber, and an in-situ atomic force microscope (AFM) system chamber. The whole beam line is situated in a bioclean environment, occupying two stories. The quality of the ion beam has been studied. It has proved that this beam line has significantly contributed to our research work on low-energy ion beam biotechnology

ECR ion source based low energy ion beam facility

Indian Academy of Sciences (India)

Mass analyzed highly charged ion beams of energy ranging from a few keV to a few MeV plays an important role in various aspects of research in modern physics. In this paper a unique low energy ion beam facility (LEIBF) set up at Nuclear Science Centre (NSC) for providing low and medium energy multiply charged ion ...

An ion beam deceleration lens for ultra-low-energy ion bombardment of naked DNA

Energy Technology Data Exchange (ETDEWEB)

Thopan, P.; Prakrajang, K. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thongkumkoon, P. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand); Suwannakachorn, D. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Yu, L.D., E-mail: yuldyuld@gmail.com [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand)

2013-07-15

Highlights: ► An ion beam deceleration lens was designed and constructed. ► The deceleration lens was installed and tested. ► The decelerated ion beam energy was measured using an electrical field. ► Decelerated ultra-low-energy ion beam bombarded naked DNA. ► Ion beam with energy of a few tens of eV could break DNA strands. -- Abstract: Study of low-energy ion bombardment effect on biological living materials is of significance. High-energy ion beam irradiation of biological materials such as organs and cells has no doubt biological effects. However, ion energy deposition in the ion-bombarded materials dominantly occurs in the low-energy range. To investigate effects from very-low-energy ion bombardment on biological materials, an ion beam deceleration lens is necessary for uniform ion energy lower than keV. A deceleration lens was designed and constructed based on study of the beam optics using the SIMION program. The lens consisted of six electrodes, able to focus and decelerate primary ion beam, with the last one being a long tube to obtain a parallel uniform exiting beam. The deceleration lens was installed to our 30-kV bioengineering-specialized ion beam line. The final decelerated-ion energy was measured using a simple electrostatic field to bend the beam to range from 10 eV to 1 keV controlled by the lens parameters and the primary beam condition. In a preliminary test, nitrogen ion beam at 60 eV decelerated from a primary 20-keV beam bombarded naked plasmid DNA. The original DNA supercoiled form was found to change to relaxed and linear forms, indicating single or double strand breaks. The study demonstrated that the ion bombardment with energy as low as several-tens eV was possible to break DNA strands and thus potential to cause genetic modification of biological cells.

An ion beam deceleration lens for ultra-low-energy ion bombardment of naked DNA

International Nuclear Information System (INIS)

Thopan, P.; Prakrajang, K.; Thongkumkoon, P.; Suwannakachorn, D.; Yu, L.D.

2013-01-01

Highlights: ► An ion beam deceleration lens was designed and constructed. ► The deceleration lens was installed and tested. ► The decelerated ion beam energy was measured using an electrical field. ► Decelerated ultra-low-energy ion beam bombarded naked DNA. ► Ion beam with energy of a few tens of eV could break DNA strands. -- Abstract: Study of low-energy ion bombardment effect on biological living materials is of significance. High-energy ion beam irradiation of biological materials such as organs and cells has no doubt biological effects. However, ion energy deposition in the ion-bombarded materials dominantly occurs in the low-energy range. To investigate effects from very-low-energy ion bombardment on biological materials, an ion beam deceleration lens is necessary for uniform ion energy lower than keV. A deceleration lens was designed and constructed based on study of the beam optics using the SIMION program. The lens consisted of six electrodes, able to focus and decelerate primary ion beam, with the last one being a long tube to obtain a parallel uniform exiting beam. The deceleration lens was installed to our 30-kV bioengineering-specialized ion beam line. The final decelerated-ion energy was measured using a simple electrostatic field to bend the beam to range from 10 eV to 1 keV controlled by the lens parameters and the primary beam condition. In a preliminary test, nitrogen ion beam at 60 eV decelerated from a primary 20-keV beam bombarded naked plasmid DNA. The original DNA supercoiled form was found to change to relaxed and linear forms, indicating single or double strand breaks. The study demonstrated that the ion bombardment with energy as low as several-tens eV was possible to break DNA strands and thus potential to cause genetic modification of biological cells

The ASDEX 100 keV neutral lithium beam diagnostic gun

International Nuclear Information System (INIS)

McCormick, K.; Kick, M.

1983-04-01

The neutral lithium beam gun intended for measurement of the poloidal magnetic field and of the density gradient in the scrape-off layer of ASDEX is described, and test results over a beam energy range of 27-100 keV are presented. In the gun, lithium ions are extracted from a solid emitter (#betta#-Eurcryptite) in a Pierce-type configuration, accelerated and focused in a two-tube immersion lens, and neutralized in a charge-exchange cell using sodium. The beam can be pulsed from less than one to several seconds, depending on experimental needs. At a distance of 165 cm from the gun the neutral beam equivalent current is typically greater than 1 mA (0.16 mA) for a beam energy of 100 keV (27 keV), the beam FWHM being about 8-9 mm. It is found that to produce a particular beam with a certain ratio must be maintained between the extraction and total beam voltages, this relationship depending in turn on the emitter-extractor separation. The principal features which distinguish the ASDEX gun from that employed on W7a are the greater compactness - all the active elements, i.e. emitter, extractor, lens, deflection plates and neutralizer, are contained with 57 cm - and the vacuum vessel, which simultaneously serves as the magnetic shielding. (orig.)

Ion Beam Materials Analysis and Modifications at keV to MeV Energies at the University of North Texas

Science.gov (United States)

Rout, Bibhudutta; Dhoubhadel, Mangal S.; Poudel, Prakash R.; Kummari, Venkata C.; Lakshantha, Wickramaarachchige J.; Manuel, Jack E.; Bohara, Gyanendra; Szilasi, Szabolcs Z.; Glass, Gary A.; McDaniel, Floyd D.

2014-02-01

The University of North Texas (UNT) Ion Beam Modification and Analysis Laboratory (IBMAL) has four particle accelerators including a National Electrostatics Corporation (NEC) 9SDH-2 3 MV tandem Pelletron, a NEC 9SH 3 MV single-ended Pelletron, and a 200 kV Cockcroft-Walton. A fourth HVEC AK 2.5 MV Van de Graaff accelerator is presently being refurbished as an educational training facility. These accelerators can produce and accelerate almost any ion in the periodic table at energies from a few keV to tens of MeV. They are used to modify materials by ion implantation and to analyze materials by numerous atomic and nuclear physics techniques. The NEC 9SH accelerator was recently installed in the IBMAL and subsequently upgraded with the addition of a capacitive-liner and terminal potential stabilization system to reduce ion energy spread and therefore improve spatial resolution of the probing ion beam to hundreds of nanometers. Research involves materials modification and synthesis by ion implantation for photonic, electronic, and magnetic applications, micro-fabrication by high energy (MeV) ion beam lithography, microanalysis of biomedical and semiconductor materials, development of highenergy ion nanoprobe focusing systems, and educational and outreach activities. An overview of the IBMAL facilities and some of the current research projects are discussed.

Reduction of the divergence angle of an incident beam to enhance the demagnification factor of a two-stage acceleration lens in a gas ion nanobeam system of several tens of keV

Science.gov (United States)

Ishii, Yasuyuki; Kojima, Takuji

2018-04-01

The demagnification factor of a two-stage acceleration lens in a gas ion nanobeam system that produces ion beams with energies in the order of 10 keV was enhanced in this study so that a hydrogen ion beam with a diameter of 115 nm could be produced. The reduction of the divergence angle of the incident beam into the two-stage acceleration lens is the effective method for enhancing the demagnification factor. The divergence angle has been gradually reduced by firstly introducing the preacceleration electrodes to control the divergence angle, namely divergence-angle-control electrodes, and secondly replacing an anode with a modified anode that possesses a Pierce electrode, both of which were in an ion source directly connected to the lens. In this study, the divergence angle of less than 3.6 × 10-4 rad that was previously used to produce a 160-nm hydrogen ion beam with the energy of 46 keV by the above procedure was numerically determined using an ion beam extraction simulation code. The determined minimum divergence angle of the incident ion beam was calculated to be 2.0 × 10-4 rad, which was about half of the previously obtained divergence angle; this was used to experimentally form a hydrogen beam with a diameter of 115 ± 10 nm and the energy of 47 keV. The demagnification factor was estimated to be 1,739 using the newly formed hydrogen beam, which was similar to the simulation result.

150 keV intense electron beam accelerator system with high repeated pulse

International Nuclear Information System (INIS)

Qi, Zhang; Tixing, Li; Hongfang, Tang; Nenggiao, Xia; Zhigin, Wang; Baohong, Zheng

1993-01-01

A 150 keV electron beam accelerator system has been developed for wide application of high power particle beams. The new wire-ion-plasma electron gun has been adopted. The parameters are as follows: Output energy - 130-150 keV; Electron beam density - 250 mA/cm 2 ; Pulse duration - 1 μs; Pulse rate 100 pps; Section of electron beam - 5 x 50 cm 2 . This equipment can be used to study repeated pulse CO 2 laser, to be a preionizer of high power discharge excimer laser and to perform radiation curing process, and so on. The first part contains principle and design consideration. Next is a description of experimental arrangement. The remainder is devoted to describing experimental results and its application

Neutralized ion beam modification of cellulose membranes for study of ion charge effect on ion-beam-induced DNA transfer

Science.gov (United States)

Prakrajang, K.; Sangwijit, K.; Anuntalabhochai, S.; Wanichapichart, P.; Yu, L. D.

2012-02-01

Low-energy ion beam biotechnology (IBBT) has recently been rapidly developed worldwide. Ion-beam-induced DNA transfer is one of the important applications of IBBT. However, mechanisms involved in this application are not yet well understood. In this study plasma-neutralized ion beam was applied to investigate ion charge effect on induction of DNA transfer. Argon ion beam at 7.5 keV was neutralized by RF-driven plasma in the beam path and then bombarded cellulose membranes which were used as the mimetic plant cell envelope. Electrical properties such as impedance and capacitance of the membranes were measured after the bombardment. An in vitro experiment on plasmid DNA transfer through the cellulose membrane was followed up. The results showed that the ion charge input played an important role in the impedance and capacitance changes which would affect DNA transfer. Generally speaking, neutral particle beam bombardment of biologic cells was more effective in inducing DNA transfer than charged ion beam bombardment.

Multi-slit triode ion optical system with ballistic beam focusing

Energy Technology Data Exchange (ETDEWEB)

Davydenko, V., E-mail: V.I.Davydenko@inp.nsk.su; Amirov, V.; Gorbovsky, A.; Deichuli, P.; Ivanov, A.; Kolmogorov, A.; Kapitonov, V.; Mishagin, V.; Shikhovtsev, I.; Sorokin, A.; Stupishin, N. [Budker Institute of Nuclear Physics, Novosibirsk 630090 (Russian Federation); Karpushov, A. N. [Ecole Polytechnique Fédérale de Lausanne, Centre de Recherches en Physique des Plasmas (CRPP), CH-1015 Lausanne (Switzerland); Smirnov, A. [Tri Alpha Energy, Inc., Rancho Santa Margarita, California 92688 (United States); Uhlemann, R. [Institute of Energy and Climate Research-Plasma Physics, Research Center Juelich, 52425 Juelich (Germany)

2016-02-15

Multi-slit triode ion-optical systems with spherical electrodes are of interest for formation of intense focused neutral beams for plasma heating. At present, two versions of focusing multi-slit triode ion optical system are developed. The first ion optical system forms the proton beam with 15 keV energy, 140 A current, and 30 ms duration. The second ion optical system is intended for heating neutral beam injector of Tokamak Configuration Variable (TCV). The injector produces focused deuterium neutral beam with 35 keV energy, 1 MW power, and 2 s duration. In the later case, the angular beam divergence of the neutral beam is 20-22 mrad in the direction across the slits of the ion optical system and 12 mrad in the direction along the slits.

Improving depth resolutions in positron beam spectroscopy by concurrent ion-beam sputtering

Science.gov (United States)

John, Marco; Dalla, Ayham; Ibrahim, Alaa M.; Anwand, Wolfgang; Wagner, Andreas; Böttger, Roman; Krause-Rehberg, Reinhard

2018-05-01

The depth resolution of mono-energetic positron annihilation spectroscopy using a positron beam is shown to improve by concurrently removing the sample surface layer during positron beam spectroscopy. During ion-beam sputtering with argon ions, Doppler-broadening spectroscopy is performed with energies ranging from 3 keV to 5 keV allowing for high-resolution defect studies just below the sputtered surface. With this technique, significantly improved depth resolutions could be obtained even at larger depths when compared to standard positron beam experiments which suffer from extended positron implantation profiles at higher positron energies. Our results show that it is possible to investigate layered structures with a thickness of about 4 microns with significantly improved depth resolution. We demonstrated that a purposely generated ion-beam induced defect profile in a silicon sample could be resolved employing the new technique. A depth resolution of less than 100 nm could be reached.

Recent progress of high-power negative ion beam development for fusion plasma heating

Energy Technology Data Exchange (ETDEWEB)

Watanabe, Kazuhiro; Akino, Noboru; Aoyagi, Tetsuo [Japan Atomic Energy Research Inst., Naka, Ibaraki (Japan). Naka Fusion Research Establishment; and others

1997-03-01

A negative-ion-based neutral beam injector (N-NBI) has been constructed for JT-60U. The N-NBI is designed to inject 500 keV, 10 MW neutral beams using two ion sources, each producing a 500 keV, 22 A D{sup -} ion beam. Beam acceleration test started in July, 1995 using one ion source. In the preliminary experiment, D{sup -} ion beam of 13.5 A has been successfully accelerated with an energy of 400 keV (5.4 MW) for 0.12 s at an operating pressure of 0.22 Pa. This is the highest D{sup -} beam current and power in the world. Co-extracted electron current was effectively suppressed to the ratio of Ie/I{sub D}- <1. The highest energy beam of 460 keV, 2.4 A, 0.44 s has also been obtained. Neutral beam injection starts in March, 1996 using two ion sources. To realize 1 MeV class NBI system for ITER (International Thermonuclear Experimental Reactor), demonstration of ampere class negative ion beam acceleration up to 1 MeV is an important mile stone. To achieve the mile stone, a high energy test facility called MeV Test Facility (MTF) was constructed. The system consists of a 1 MV, 1 A acceleration power supply and a 100 kW power supply system for negative ion production. Up to now, an H{sup -} ion beam was accelerated up to the energy of 805 keV with an acceleration drain current of 150 mA for 1 s in a five stage electrostatic multi-aperture accelerator. (author)

Production of ion beam by conical pinched electron beam diode

International Nuclear Information System (INIS)

Matsukawa, Y.; Nakagawa, Y.

1982-01-01

Some properties of the ion beam produced by pinched electron beam diode having conical shape electrodes and organic insulator anode was studied. Ion energy is about 200keV and the peak diode current is about 30 kA. At 11cm from the diode apex, not the geometrical focus point, concentrated ion beam was obtained. Its density is more than 500A/cm 2 . The mean ion current density within the radius of 1.6cm around the axis from conical diode is two or three times that from an usual pinched electron beam diode with flat parallel electrodes of same dimension and impedance under the same conditions. (author)

Maskless, resistless ion beam lithography

International Nuclear Information System (INIS)

Ji, Qing

2003-01-01

As the dimensions of semiconductor devices are scaled down, in order to achieve higher levels of integration, optical lithography will no longer be sufficient for the needs of the semiconductor industry. Alternative next-generation lithography (NGL) approaches, such as extreme ultra-violet (EUV), X-ray, electron-beam, and ion projection lithography face some challenging issues with complicated mask technology and low throughput. Among the four major alternative NGL approaches, ion beam lithography is the only one that can provide both maskless and resistless patterning. As such, it can potentially make nano-fabrication much simpler. This thesis investigates a focused ion beam system for maskless, resistless patterning that can be made practical for high-volume production. In order to achieve maskless, resistless patterning, the ion source must be able to produce a variety of ion species. The compact FIB system being developed uses a multicusp plasma ion source, which can generate ion beams of various elements, such as O 2 + , BF 2 + , P + etc., for surface modification and doping applications. With optimized source condition, around 85% of BF 2 + , over 90% of O 2 + and P + have been achieved. The brightness of the multicusp-plasma ion source is a key issue for its application to maskless ion beam lithography. It can be substantially improved by optimizing the source configuration and extractor geometry. Measured brightness of 2 keV He + beam is as high as 440 A/cm 2 · Sr, which represents a 30x improvement over prior work. Direct patterning of Si thin film using a focused O 2 + ion beam has been investigated. A thin surface oxide film can be selectively formed using 3 keV O 2 + ions with the dose of 10 15 cm -2 . The oxide can then serve as a hard mask for patterning of the Si film. The process flow and the experimental results for directly patterned poly-Si features are presented. The formation of shallow pn-junctions in bulk silicon wafers by scanning focused P

Fusion at counterstreaming ion beams - ion optic fusion (IOF)

International Nuclear Information System (INIS)

Gryzinski, M.

1981-01-01

The results of investigation are briefly reviewed in the field of ion optic fusion performed at the Institute of Nuclear Research in Swierk. The ion optic fusion concept is based on the possibility of obtaining fusion energy at highly ordered motion of ions in counterstreaming ion beams. For this purpose TW ion beams must be produced and focused. To produce dense and charge-neutralized ion beams the selective conductivity and ballistic focusing ideas were formulated and used in a series of RPI devices with low-pressure cylindrical discharge between grid-type electrodes. 100 kA, 30 keV deuteron beams were successfully produced and focused into the volume of 1 cm 3 , yielding 10 9 neutrons per 200 ns shot on a heavy ice target. Cylindrically convergent ion beams with magnetic anti-defocusing were proposed in order to reach a positive energy gain at reasonable energy level. (J.U.)

Gabor lens focusing of a negative ion beam

International Nuclear Information System (INIS)

Palkovic, J.A.; Mills, F.E.; Schmidt, C.; Young, D.E.

1989-05-01

Gabor or plasma lenses have previously been used to focus intense beams of positive ions at energies from 10 keV to 5 MeV. It is the large electrostatic field of the non-neutral plasma in the Gabor lens which is responsible for the focusing. Focusing an ion beam with a given sign of charge in a Gabor lens requires a non-neutral plasma with the opposite sign of charge as the beam. A Gabor lens constructed at Fermilab has been used to focus a 30 keV proton beam with good optical quality. We discuss studies of the action of a Gabor lens on a beam of negative ions. A Gabor lens has been considered for matching an H/sup /minus// beam into an RFQ in the redesign of the low energy section of the Fermilab linac. 9 refs., 3 figs., 1 tab

In situ thin film measurement by X-rays induced by 10 KeV-100 KeV ion beams

International Nuclear Information System (INIS)

Torrisi, L.; Calcagno, L.; Trovato, A.; Foti, G.

1982-01-01

The in situ measurement of thin film thickness between 50 and 100 KeV is described. The method used seems to be flexible enough and can be applied to any type of material. The only parameter intervening in the thickness measurement is the specific energy loss of the proton beams. Film of Al, Cu and Ag have been considered. When the primary beam energy increases the perception in depth of the method grows, reaching 10 μm with 1 MeV beam. In this case the autoabsorption takes place

Intense pulsed heavy ion beam technology

International Nuclear Information System (INIS)

Masugata, Katsumi; Ito, Hiroaki

2010-01-01

Development of intense pulsed heavy ion beam accelerator technology is described for the application of materials processing. Gas puff plasma gun and vacuum arc discharge plasma gun were developed as an active ion source for magnetically insulated pulsed ion diode. Source plasma of nitrogen and aluminum were successfully produced with the gas puff plasma gun and the vacuum arc plasma gun, respectively. The ion diode was successfully operated with gas puff plasma gun at diode voltage 190 kV, diode current 2.2 kA and nitrogen ion beam of ion current density 27 A/cm 2 was obtained. The ion composition was evaluated by a Thomson parabola spectrometer and the purity of the nitrogen ion beam was estimated to be 86%. The diode also operated with aluminum ion source of vacuum arc plasma gun. The ion diode was operated at 200 kV, 12 kA, and aluminum ion beam of current density 230 A/cm 2 was obtained. The beam consists of aluminum ions (Al (1-3)+ ) of energy 60-400 keV, and protons (90-130 keV), and the purity was estimated to be 89%. The development of the bipolar pulse accelerator (BPA) was reported. A double coaxial type bipolar pulse generator was developed as the power supply of the BPA. The generator was tested with dummy load of 7.5 ohm, bipolar pulses of -138 kV, 72 ns (1st pulse) and +130 kV, 70 ns (2nd pulse) were successively generated. By applying the bipolar pulse to the drift tube of the BPA, nitrogen ion beam of 2 A/cm 2 was observed in the cathode, which suggests the bipolar pulse acceleration. (author)

A high-flux low-energy hydrogen ion beam using an end-Hall ion source

NARCIS (Netherlands)

Veldhoven, J. van; Sligte, E. te; Janssen, J.P.B.

2016-01-01

Most ion sources that produce high-flux hydrogen ion beams perform best in the high energy range (keV). Alternatively, some plasma sources produce very-lowenergy ions (<< 10 eV). However, in an intermediate energy range of 10-200 eV, no hydrogen ion sources were found that produce high-flux beams.

Generation and focusing of intense ion beams with an inverse pinch ion diode

International Nuclear Information System (INIS)

Hashimoto, Yoshiyuki; Sato, Morihiko; Yatsuzuka, Mitsuyasu; Nobuhara, Sadao

1992-01-01

Generation and focusing of ion beams using an inverse pinch ion diode with a flat anode has been studied. The ion beams generated with the inverse pinch ion diode were found to be focused at 120 mm from the anode by the electrostatic field in the diode. The energy and maximum current density of the ion beams were 180 keV and 420 A/cm 2 , respectively. The focusing angle of the ion beams was 4.3deg. The beam brightness was estimated to be 1.3 GW/cm 2 ·rad 2 . The focusing distance of the ion beams was found to be controllable by changing the diameters of the anode and cathode. (author)

Plasma ion sources and ion beam technology in microfabrications

International Nuclear Information System (INIS)

Ji, Lili

2007-01-01

For over decades, focused ion beam (FIB) has been playing a very important role in microscale technology and research, among which, semiconductor microfabrication is one of its biggest application area. As the dimensions of IC devices are scaled down, it has shown the need for new ion beam tools and new approaches to the fabrication of small-scale devices. In the meanwhile, nanotechnology has also deeply involved in material science research and bioresearch in recent years. The conventional FIB systems which utilize liquid gallium ion sources to achieve nanometer scale resolution can no longer meet the various requirements raised from such a wide application area such as low contamination, high throughput and so on. The drive towards controlling materials properties at nanometer length scales relies on the availability of efficient tools. In this thesis, three novel ion beam tools have been developed and investigated as the alternatives for the conventional FIB systems in some particular applications. An integrated focused ion beam (FIB) and scanning electron microscope (SEM) system has been developed for direct doping or surface modification. This new instrument employs a mini-RF driven plasma source to generate focused ion beam with various ion species, a FEI two-lens electron (2LE) column for SEM imaging, and a five-axis manipulator system for sample positioning. An all-electrostatic two-lens column has been designed to focus the ion beam extracted from the source. Based on the Munro ion optics simulation, beam spot sizes as small as 100 nm can be achieved at beam energies between 5 to 35 keV if a 5 (micro)m-diameter extraction aperture is used. Smaller beam spot sizes can be obtained with smaller apertures at sacrifice of some beam current. The FEI 2LE column, which utilizes Schottky emission, electrostatic focusing optics, and stacked-disk column construction, can provide high-resolution (as small as 20 nm) imaging capability, with fairly long working distance

Design and fabrication of a Transverse Field Focussing (TFF) 180 keV negative ion accelerator

International Nuclear Information System (INIS)

Matuk, C.A.; Anderson, O.A.; Owren, H.M.; Paterson, J.A.; Purgalis, P.

1985-11-01

The 180 keV Transverse Field Focussing (TFF) negative ion accelerator described is the final component of a negative ion based neutral beam acceleration system which is being developed as proof-of-principle demonstration of a radiation hardened neutral beamline. The 180 keV beamline consists of: a surface conversion negative ion source, a 80 keV pre-accelerator, a TFF pumping, matching, and transport section, and the 180 keV TFF accelerator presented. This beamline is expected to provide 1 A of H - at 180 keV. In the design of the accelerator, particular importance was given to the rigidity of the accelerator electrode mounting structures and to the electrical isolation of the electrodes along with their related cooling lines. An optical alignment scheme was developed to assemble and to insure precision alignment of the electrodes

Maskless, resistless ion beam lithography

Energy Technology Data Exchange (ETDEWEB)

Ji, Qing [Univ. of California, Berkeley, CA (United States)

2003-01-01

As the dimensions of semiconductor devices are scaled down, in order to achieve higher levels of integration, optical lithography will no longer be sufficient for the needs of the semiconductor industry. Alternative next-generation lithography (NGL) approaches, such as extreme ultra-violet (EUV), X-ray, electron-beam, and ion projection lithography face some challenging issues with complicated mask technology and low throughput. Among the four major alternative NGL approaches, ion beam lithography is the only one that can provide both maskless and resistless patterning. As such, it can potentially make nano-fabrication much simpler. This thesis investigates a focused ion beam system for maskless, resistless patterning that can be made practical for high-volume production. In order to achieve maskless, resistless patterning, the ion source must be able to produce a variety of ion species. The compact FIB system being developed uses a multicusp plasma ion source, which can generate ion beams of various elements, such as O₂⁺, BF₂⁺, P⁺ etc., for surface modification and doping applications. With optimized source condition, around 85% of BF₂⁺, over 90% of O₂⁺ and P⁺ have been achieved. The brightness of the multicusp-plasma ion source is a key issue for its application to maskless ion beam lithography. It can be substantially improved by optimizing the source configuration and extractor geometry. Measured brightness of 2 keV He⁺ beam is as high as 440 A/cm² • Sr, which represents a 30x improvement over prior work. Direct patterning of Si thin film using a focused O₂⁺ ion beam has been investigated. A thin surface oxide film can be selectively formed using 3 keV O₂⁺ ions with the dose of 10¹⁵ cm^-2. The oxide can then serve as a hard mask for patterning of the Si film. The

Development of a dc, broad beam, Mevva ion source

International Nuclear Information System (INIS)

Brown, I.G.; Dickinson, M.R.; Galvin, J.E.; MacGill, R.A.

1991-09-01

We are developing an embodiment of metal vapor vacuum arc (Mevva) ion source which will operate dc and have very large area beam. In preliminary testing, a dc titanium ion beam was formed with a current of approximately 0.6 amperes at an extraction voltage of 9kV (about 18 keV ion energy, by virtue of the ion charge state distribution) and using an 18 cm diameter set of multi-aperture. Separately, we have tested and formed beam from a 50 cm diameter (2000 cm 2 ) set of grids using a pulsed plasma gun. This configuration appears to be very efficient in terms of plasma utilization, and we have formed beams with diameter 33 cm (FWHM) and ion current up to 7 amperes at an extraction voltage of 50 kV (about 100 keV mean ion energy) and up to 20 amperes peak at the current overshoot part of the beam pulse. Here we describe this Part Of our Mevva development program and summarize the results obtained to-date

Development of a negative ion-based neutral beam injector in Novosibirsk.

Science.gov (United States)

Ivanov, A A; Abdrashitov, G F; Anashin, V V; Belchenko, Yu I; Burdakov, A V; Davydenko, V I; Deichuli, P P; Dimov, G I; Dranichnikov, A N; Kapitonov, V A; Kolmogorov, V V; Kondakov, A A; Sanin, A L; Shikhovtsev, I V; Stupishin, N V; Sorokin, A V; Popov, S S; Tiunov, M A; Belov, V P; Gorbovsky, A I; Kobets, V V; Binderbauer, M; Putvinski, S; Smirnov, A; Sevier, L

2014-02-01

A 1000 keV, 5 MW, 1000 s neutral beam injector based on negative ions is being developed in the Budker Institute of Nuclear Physics, Novosibirsk in collaboration with Tri Alpha Energy, Inc. The innovative design of the injector features the spatially separated ion source and an electrostatic accelerator. Plasma or photon neutralizer and energy recuperation of the remaining ion species is employed in the injector to provide an overall energy efficiency of the system as high as 80%. A test stand for the beam acceleration is now under construction. A prototype of the negative ion beam source has been fabricated and installed at the test stand. The prototype ion source is designed to produce 120 keV, 1.5 A beam.

A linear radiofrequency quadrupole ion trap for the cooling and bunching of radioactive ion beams

CERN Document Server

Kellerbauer, A G; Dilling, J; Henry, S; Herfurth, F; Kluge, H J; Lamour, E; Moore, R B; Scheidenberger, C; Schwarz, S; Sikler, G; Szerypo, J

2002-01-01

A linear radiofrequency quadrupole ion guide and beam buncher has been installed at the ISOLTRAP mass spectrometry experiment at the ISOLDE facility at CERN. The apparatus is being used as a beam cooling, accumulation, and bunching system. It operates with a buffer gas that cools the injected ions and converts the quasicontinuous 60- keV beam from the ISOLDE facility to 2.5-keV beam pulses with improved normalized transverse emittance. Recent measurements suggest a capture efficiency of the ion guide of up to 40% and a cooling and bunching efficiency of at least 12% which is expected to still be increased. The improved ISOLTRAP setup has so far been used very successfully in three on-line experiments. (12 refs).

Novel Faraday cup for the simultaneous observation and measurement of ion-beam currents

International Nuclear Information System (INIS)

Wei, C.; Seidman, D.N.

1977-01-01

A novel Faraday cup is described which allows the simultaneous observation and measurement of ion-beam currents. The Faraday cup is constructed around a Galileo channel electron multiplier array (CEMA), which serves as the basis of an internal image intensification system (a gain of >10 4 ) for the observation of the ion beam; the CEMA also acts as a collector for the ion current which is measured by a Keithley 602 electrometer. The ion current is integrated by a simple and inexpensive dosimeter; the electronic circuit for the dosimeter is described. The application of the Faraday cup to the observation and measurement of a 30-keV Ar + ion beam is presented as an illustrative example. We have also employed this Faraday cup to observe and measure 30-keV Cr + , Mo + , or W + , and 18-keV Au + ion beams employed for the in situ irradiation of field-ion microscope specimens

Novel Faraday cup for the simultaneous observation and measurement of ion-beam currents

International Nuclear Information System (INIS)

Wei, C.Y.; Seidman, D.N.

1977-07-01

The Faraday cup is constructed around a Galileo channel electron multiplier array (CEMA) which serves as the basis of an internal image intensification system (a gain of greater than 10 4 ) for the observation of the ion beam; the CEMA also acts as a collector for the ion cured by a Keithley 602 electrometer. The ion current is integrated by a simple and inexpensive dosimeter; the electronic circuit for the dosimeter is described. The application of the Faraday cup to the observation and measurement of a 30 keV Ar + ion beam is presented as an illustrative example. This Faraday cup was also employed to observe and measure 30 keV Cr + , Mo + or W + and 18 keV Au + ion beams employed for the in-situ irradiation of field-ion microscope specimens

A 2-100 keV, UHV ion impact spectrometer for ion-solid interaction studies

International Nuclear Information System (INIS)

Berg, J.A. Van den; Armour, D.G.; Verheij, L.K.

1978-01-01

A 2 to 100 keV ion accelerator has been constructed as part of an ion impact spectrometer in which a number of analytical techniques have been combined to allow a comprehensive study of the interaction of low- and medium-energy ions with solids to be carried out under carefully controlled conditions. The overall requirements of the ion beam system in terms of ion species, beam purity, uniformity, energy spread and intensity were dictated by the interest in carrying out low-energy ion scattering, Rutherford back-scattering and thermal desorption experiments. The accelerator design utilises the principle of low-energy extraction and mass analysis, and post-acceleration up to the required high energy. The ions are produced in a duoplasmatron ion source and a parallel beam is obtained after mass selection, utilising a quadrupole triplet lens in conjunction with a 60 0 stigmatic focusing magnetic analyser. Proton and rare gas ion beams of 1 to 100 nA are routinely obtained on target. The 54 cm diameter, UHV target chamber is pumped by a 270 1 s -1 turbo-molecular pump in conjunction with an in-line titanium sublimator, and typical base pressures of 1 to 4 x 10 -11 Torr are achieved. The target is supported in a precision, three-axis goniometer and the detection system, at present comprising a 90 mm mean diameter hemispherical energy analyser and channel electron multiplier, is mounted on a two-axis manipulator. Preliminary measurements using the system have employed the low-energy ion scattering technique to study the oxidation of a Ni(110) surface. (author)

The System of Nanosecond 280-KeV He+ Pulsed Beam

International Nuclear Information System (INIS)

Junphong, P.; Ano, V.; Lekprasert, B.; Suwannakachorn, D.; Thongnopparat, N.; Vilaithong, T.; Chiang Mai U.; Wiedemann, H.; SLAC/SLAC, SSRL

2006-01-01

At Fast Neutron Research Facility, the 150 kV-pulses neutron generator is being upgraded to a 280-kV-pulsed-He beam for time-of-flight Rutherford backscattering spectrometry. It involves replacing the existing beam line elements by a multicusp ion source, a 400-kV accelerating tube, 45-double focusing dipole magnet and quadrupole lens. The multicusp ion source is a compact filament-driven of 2.6 cm in diameter and 8 cm in length. The current extracted is 20.4 μ A with 13 kV of extraction voltage and 8.8 kV of Einzel lens voltage. The beam emittance has found to vary between 6-12 mm mrad. The beam transport system has to be redesigned based on the new elements. The important part of a good pulsed beam depends on the pulsing system. The two main parts are the chopper and buncher. An optimized geometry for the 280 keV pulsed helium ion beam will be presented and discussed. The PARMELA code has been used to optimize the space charge effect, resulting in pulse width of less than 2 ns at a target. The calculated distance from a buncher to the target is 4.6 m. Effects of energy spread and phase angle between chopper and buncher have been included in the optimization of the bunch length

Study on mutation breeding and fermentation of antimicrobial lipopeptides yielding bacterium with 20 keV N+ ion beam implantation

International Nuclear Information System (INIS)

Fang Chuanji; Lu Zhaoxin; Sun Lijun; Lv Fengxia; Bie Xiaomei

2006-01-01

Bacillus amyloliquefaciens ES-2 was implanted with 20 keV N + ion beam to breed mutants of high yield of antimicrobial lipopeptides. The dose effects of the nitrogen ion implantation on the survival and positive mutations rate was studied. The mutant strain designated as B. amyloliquefaciens ES-2-4 showing higher yield of antimicrobial lipopeptides was obtained. The concentration of the lipopeptides in fermentation liquid increased by 15.2% compared with the original strain. The authors also studied the fermentation process between the mutant and the original strain. It indicated that the mutant with shorter lag phase, longer stable phase and higher yield of the lipopeptides, which was suitable for large-scale production. (authors)

Underling modification in ion beam induced Si wafers

International Nuclear Information System (INIS)

Hazra, S.; Chini, T.K.; Sanyal, M.K.; Grenzer, J.; Pietsch, U.

2005-01-01

Subsurface (amorphous-crystalline interface) structure of keV ion beam modified Si(001) wafers was studied for the first time using non-destructive technique and compared with that of the top one. Ion-beam modifications of the Si samples were done using state-of-art high-current ion implanter facility at Saha Institute of Nuclear Physics by changing energy, dose and angle of incidence of the Ar + ion beam. To bring out the underlying modification depth-resolved x-ray grazing incidence diffraction has been carried out using synchrotron radiation facility, while the structure of the top surface was studied through atomic force microscopy

Acceleration of beam ions during major radius compression in TFTR

International Nuclear Information System (INIS)

Wong, K.L.; Bitter, M.; Hammett, G.W.

1985-09-01

Tangentially co-injected deuterium beam ions were accelerated from 82 keV up to 150 keV during a major radius compression experiment in TFTR. The ion energy spectra and the variation in fusion yield were in good agreement with Fokker-Planck code simulations. In addition, the plasma rotation velocity was observed to rise during compression

Low energy ion beam dynamics of NANOGAN ECR ion source

Energy Technology Data Exchange (ETDEWEB)

Kumar, Sarvesh, E-mail: sarvesh@iuac.res.in; Mandal, A.

2016-04-01

A new low energy ion beam facility (LEIBF) has been developed for providing the mass analyzed highly charged intense ion beams of energy ranging from a few tens of keV to a few MeV for atomic, molecular and materials sciences research. The new facility consists of an all permanent magnet 10 GHz electron cyclotron resonance (ECR) ion source (NANOGAN) installed on a high voltage platform (400 kV) which provides large currents of multiply charged ion beams. Higher emittance at low energy of intense ion beam puts a tremendous challenge to the beam optical design of this facility. The beam line consists of mainly the electrostatic quadrupoles, an accelerating section, analyzing cum switching magnet and suitable beam diagnostics including vacuum components. The accelerated ion beam is analyzed for a particular mass to charge (m/q) ratio as well as guided to three different lines along 75°, 90° and 105° using a large acceptance analyzing cum switching magnet. The details of transverse beam optics to all the beam lines with TRANSPORT and GICOSY beam optics codes are being described. Field computation code, OPERA 3D has been utilized to design the magnets and electrostatic quadrupoles. A theoretical estimation of emittance for optimized geometry of ion source is given so as to form the basis of beam optics calculations. The method of quadrupole scan of the beam is used to characterize the emittance of the final beam on the target. The measured beam emittance increases with m/q ratios of various ion beams similar to the trend observed theoretically.

Gas cluster ion beam equipments for industrial applications

International Nuclear Information System (INIS)

Matsuo, J.; Takaoka, G.H.; Yamada, I.

1995-01-01

30 keV and 200 keV gas cluster ion beam equipments have been developed for industrial applications. A gas cluster source with a non-cooled nozzle was used for both the equipments. Sufficient monomer ion suppression was achieved by using an ExB filter and chromatic lenses mass filter with low extraction voltage. These equipments are suitable to be used for low-damage surface treatment of metals, insulators and semiconductors without heavy metal contamination. (orig.)

Mini biased collimated faraday cups for measurement of intense pulsed ion beams

International Nuclear Information System (INIS)

He Xiaoping; Shi Lei; Zhang Jiasheng; Qiu Aici

2000-01-01

An analysis of principle of a biased Faraday cup for measuring ion beams density and the main reasons related to the measuring accuracy were presented. An array of mini biased collimated Faraday cups was manufactured for the measurement of ion beam density of a compact 200 keV high power ion beam source. In the experiments the maximum density of ion beam was in the center of the beam, and it was about 170 A/cm 2

A linear radiofrequency ion trap for accumulation, bunching, and emittance improvement of radioactive ion beams

International Nuclear Information System (INIS)

Herfurth, F.; Dilling, J.; Kellerbauer, A.

2000-05-01

An ion beam cooler and buncher has been developed for the manipulation of radioactive ion beams. The gas-filled linear radiofrequency ion trap system is installed at the Penning trap mass spectrometer ISOLTRAP at ISOLDE/CERN. Its purpose is to accumulate the 60-keV continuous ISOLDE ion beam with high efficiency and to convert it into low-energy low-emittance ion pulses. The efficiency was found to exceed 10% in agreement with simulations. A more than 10-fold reduction of the ISOLDE beam emittance can be achieved. The system has been used successfully for first on-line experiments. Its principle, setup and performance will be discussed. (orig.)

Portable test bench for the studies concerning ion sources and ion beam extraction and focusing systems

International Nuclear Information System (INIS)

Cordero Lopez, F.

1961-01-01

A portable test bench is described, which was designed to check ion sources, ion beam extraction and focusing systems before its use in a 600 KeV Cockcroft-Walton accelerator. The vacuum possibilities of the system are specially analyzed in connection with its particular use. The whole can be considered as a portable accelerator of low energy (50 keV). (Author)

Intense ion beam research at Los Alamos

International Nuclear Information System (INIS)

Rej, D.J.; Bartsch, R.R.; Davis, H.A.; Faehl, R.J.; Gautier, D.C.; Greenly, J.B.; Henins, I.; Linton, T.W.; Muenchausen, R.E.; Waganaar, W.J.

1992-01-01

Two new interdisciplinary programs are underway at Los Alamos involving the physics and technology of intense light ion beams. In contrast to high-power ICF applications, the LANL effort concentrates on the development of relatively low-voltage (50 to 800 kV) and long-pulsewidth (0.1 to 1 μs) beams. The first program involves the 1.2 MV, 300-kJ Anaconda generator which has been fitted with an extraction ion diode. Long pulsewidth ion beams have been accelerated, propagated, and extracted for a variety of magnetic field conditions. The primary application of this beam is the synthesis of novel materials. Initial experiments on the congruent evaporative deposition of metallic and ceramic thin films are reported. The second program involves the development of a 120-keV, 50-kA, 1-μs proton beam for the magnetic fusion program as an ion source for an intense diagnostic neutral beam. Ultra-bright, pulsed neutral beams will be required to successfully measure ion temperatures and thermalized alpha particle energy distributions in large, dense, ignited tokamaks such as ITER

Intense ion beam research at Los Alamos

International Nuclear Information System (INIS)

Rej, D.J.; Bartsch, R.R.; Davis, H.A.; Faehl, R.J.; Gautier, D.C.; Greenly, J.B.; Henins, I.; Linton, T.W.; Muenchausen, R.E.; Waganaar, W.J.

1993-01-01

Two new interdisciplinary programs are underway at Los Alamos involving the physics and technology of intense light ion beams. In contrast to high-power ICF applications, the LANL effort concentrates on the development of relatively low-voltage (50 to 800 kV) and long pulsewidth (0.1 to 1 μs) beams. The first program involves the 1.2 MV, 300-kJ Anaconda generator which has been fitted with an extraction ion diode. Long pulsewidth ion beams have been accelerated, propagated, and extracted for a variety of magnetic field conditions. The primary application of this beam is the synthesis of novel materials. Initial experiments on the congruent evaporative deposition of metallic and ceramic thin films are reported. The second program involves the development of a 120-keV, 50-kA, 1-μs proton beam for the magnetic fusion program as an ion source for an intense diagnostic neutral beam. Ultra-bright, pulsed neutral beams will be required to successfully measure ion temperatures and thermalized alpha particle distributions in large, dense, ignited tokamaks such as ITER

Progress toward a microsecond duration, repetitively pulsed, intense- ion beam

International Nuclear Information System (INIS)

Davis, H.A.; Olson, J.C.; Reass, W.A.; Coates, D.M.; Hunt, J.W.; Schleinitz, H.M.; Greenly, J.B.

1996-01-01

A number of intense ion beams applications are emerging requiring repetitive high-average-power beams. These applications include ablative deposition of thin films, rapid melt and resolidification for surface property enhancement, advanced diagnostic neutral beams for the next generation of Tokamaks, and intense pulsed-neutron sources. We are developing a 200-250 keV, 15 kA, 1 μs duration, 1-30 Hz intense ion beam accelerator to address these applications

Characteristics of a long-pulse (30-s), high-power (4-MW) ion source for neutral beam injection

International Nuclear Information System (INIS)

Menon, M.M.; Barber, G.C.; Combs, S.K.

1983-01-01

A quasi-steady-state ion source has been developed for neutral beam injection applications. It is of the duoPIGatron type designed for delivering 50 A of hydrogen ions at 80 keV for 30-s-long pulses. Ion beams of 40 A at 75 keV were extracted for pulse lengths up to 30 s, maintaining excellent optical quality in the beam for the entire pulse duration. The design features and operational characteristics of the ion source are elaborated

Progress toward a microsecond duration, repetitively pulsed, intense-ion beam

Energy Technology Data Exchange (ETDEWEB)

Davis, H A; Olson, J C; Reass, W A [Los Alamos National Lab., NM (United States); Coates, D M; Hunt, J W; Schleinitz, H M [DuPont Central Research and Development, Wilmington, DE (United States); Lovberg, R H [Univ. of California, San Diego, CA (United States); Greenly, J B [Cornell Univ., Ithaca, NY (United States). Lab. of Plasma Studies

1997-12-31

A number of intense ion beams applications are emerging requiring repetitive high-average-power beams. These applications include ablative deposition of thin films, rapid melt and resolidification for surface property enhancement, advanced diagnostic neutral beams for the next generation of Tokamaks, and intense pulsed-neutron sources. A 200-250 keV, 15 kA, 1 {mu}s duration, 1-30 Hz intense ion beam accelerator is being developed to address these applications. (author). 4 figs., 7 refs.

Negative ions as a source of low energy neutral beams

Energy Technology Data Exchange (ETDEWEB)

Fink, J.H.

1980-01-01

Little consideration has been given to the impact of recent developments in negative ion source technology on the design of low energy neutral beam injectors. However, negative ion sources of improved operating efficiency, higher gas efficiency, and smaller beam divergence will lead to neutral deuterium injectors, operating at less than 100 keV, with better operating efficiencies and more compact layouts than can be obtained from positive ion systems.

Negative ions as a source of low energy neutral beams

International Nuclear Information System (INIS)

Fink, J.H.

1980-01-01

Little consideration has been given to the impact of recent developments in negative ion source technology on the design of low energy neutral beam injectors. However, negative ion sources of improved operating efficiency, higher gas efficiency, and smaller beam divergence will lead to neutral deuterium injectors, operating at less than 100 keV, with better operating efficiencies and more compact layouts than can be obtained from positive ion systems

Ion-beam synthesis and photoluminescence of SiC nanocrystals assisted by MeV-heavy-ion-beam annealing

International Nuclear Information System (INIS)

Khamsuwan, J.; Intarasiri, S.; Kirkby, K.; Chu, P.K.; Singkarat, S.; Yu, L.D.

2012-01-01

This work explored a novel way to synthesize silicon carbide (SiC) nanocrystals for photoluminescence. Carbon ions at 90 keV were implanted in single crystalline silicon wafers at elevated temperature, followed by irradiation using xenon ion beams at an energy of 4 MeV with two low fluences of 5 × 10 13 and 1 × 10 14 ions/cm 2 at elevated temperatures for annealing. X-ray diffraction, Raman scattering, infrared spectroscopy and transmission electron microscopy were used to characterize the formation of nanocrystalline SiC. Photoluminescence was measured from the samples. The results demonstrated that MeV-heavy-ion-beam annealing could indeed induce crystallization of SiC nanocrystals and enhance emission of photoluminescence with violet bands dominance due to the quantum confinement effect.

Dual ion beam irradiation system for in situ observation with electron microscope

International Nuclear Information System (INIS)

Tsukamoto, Tetuo; Hojou, Kiiti; Furuno, Sigemi; Otsu, Hitosi; Izui, Kazuhiko.

1993-01-01

We have developed a new in situ observation system for dynamic processes under dual ion beam irradiation. The system consists of a modified 400 keV analytical electron microscope (JEOL, JEM-4000FX) and two 40 kV ion beam accelerators. This system allows evaluation of microscopic changes of structure and chemical bonding state of materials in the dynamic processes under two kinds of ion beam irradiations, that is required for the simulation test of the first wall of nuclear fusion reactors onto which He + , H + , and H 2 + ions are irradiated simultaneously. These two ion accelerators were equipped symmetrically both sides of the electron microscope and individually controlled. Each ion beam extracted from a duo-plasmatron ion gun is bent downward by an angle of 30deg with a mass-separating magnet, and introduced into specimen chamber of the electron microscope. Inside the specimen chamber the beam is deflected again by an angle of 30deg with an electrostatic prism so as to be incident on the specimen surface. Finally, two ion beams from both side are incident on the specimen surface at an angle of 60deg. The maximum ion current density of helium is more than 250μA/cm 2 at the specimen at an ion energy of 17 keV. Images of the electron microscope during dual ion beam irradiation are observed through a TV camera and recorded with a VTR. (author)

Ion source for ion beam deposition employing a novel electrode assembly

Science.gov (United States)

Hayes, A. V.; Kanarov, V.; Yevtukhov, R.; Hegde, H.; Druz, B.; Yakovlevitch, D.; Cheesman, W.; Mirkov, V.

2000-02-01

A rf inductively coupled ion source employing a novel electrode assembly for focusing a broad ion beam on a relatively small target area was developed. The primary application of this ion source is the deposition of thin films used in the fabrication of magnetic sensors and optical devices. The ion optics consists of a three-electrode set of multiaperture concave dished grids with a beam extraction diameter of 150 mm. Also described is a variation in the design providing a beam extraction diameter of 120 mm. Grid hole diameters and grid spacing were optimized for low beamlet divergence and low grid impingement currents. The radius of curvature of the grids was optimized to obtain an optimally focused ion beam at the target location. A novel grid fabrication and mounting design was employed which overcomes typical limitations of such grid assemblies, particularly in terms of maintaining optimum beam focusing conditions after multiple cycles of operation. Ion beam generation with argon and xenon gases in energy ranges from 0.3 to 2.0 keV was characterized. For operation with argon gas, beam currents greater than 0.5 A were obtained with a beam energy of 800 eV. At optimal beam formation conditions, beam profiles at distances about equal to the radius of curvature were found to be close to Gaussian, with 99.9% of the beam current located within a 150 mm target diameter. Repeatability of the beam profile over long periods of operation is also reported.

Radiation blistering in Inconel-625 due to 100 KeV helium ion irradiation

International Nuclear Information System (INIS)

Whitton, J.L.; Rao, A.S.; Kaminsky, M.

1988-01-01

The objective of this study was to determine whether the change of angle of incidence of an ion beam impinging on surface blisters during their growth phase (before exfoliation) could influence the blister skin thickness and the blister crater depth. Polished, polycrystalline Inconel-625 samples were irradiated at room temperature and at normal incidence to the major sample surface with 100 keV helium ions to a total dose of 6.24x10 18 ions/cm 2 . The results revealed that many exfoliated blisters leave craters which have two or three concentric pits. The blister skin thickness near the center of the blister was found to agree well with the calculated projected range of 100 keV He ions in nickel. However, the blister skin thickness of some exfoliated blisters along the edge of the fracture surface showed different thicknesses. A model is proposed to explain the observed blister crater/blister fracture features in terms of a change of angle of incidence of the incident ions to the surface during the growth phase of surface blisters. (orig.)

Ion beam induced luminescence from diamond using an MeV ion microprobe

Energy Technology Data Exchange (ETDEWEB)

Bettiol, A.A.; Jamieson, D. N.; Prawer, S.; Allen, M.G. [Melbourne Univ., Parkville, VIC (Australia). School of Physics

1993-12-31

Analysis of the luminescence induced by a MeV ion beam offers the potential to provide useful information about the chemical properties of atoms in crystals to complement the information provided by more traditional Ion Beam Analysis (IBA) such as Rutherford Backscattering Spectrometry (RBS), ion channeling and Particle Induced X-ray Emission (PIXE). Furthermore, the large penetration depth of the MeV ion beam offers several advantages over the relatively shallow penetration of keV electrons typically employed in cathodoluminescence. An Ion Beam Induced Luminescence (IBIL) detection system was developed for the Melbourne microprobe that allows the spatial mapping of the luminescence signal along with the signals from RBS and PIXE. Homoepitaxial diamond growth has been studied and remarkable shifts in the characteristic blue luminescence of diamond towards the green were observed in the overgrowth. This has been tentatively identified as being due to transition metal inclusions in the epitaxial layers. 8 refs., 2 refs.

Ion beam induced luminescence from diamond using an MeV ion microprobe

Energy Technology Data Exchange (ETDEWEB)

Bettiol, A A; Jamieson, D N; Prawer, S; Allen, M G [Melbourne Univ., Parkville, VIC (Australia). School of Physics

1994-12-31

Analysis of the luminescence induced by a MeV ion beam offers the potential to provide useful information about the chemical properties of atoms in crystals to complement the information provided by more traditional Ion Beam Analysis (IBA) such as Rutherford Backscattering Spectrometry (RBS), ion channeling and Particle Induced X-ray Emission (PIXE). Furthermore, the large penetration depth of the MeV ion beam offers several advantages over the relatively shallow penetration of keV electrons typically employed in cathodoluminescence. An Ion Beam Induced Luminescence (IBIL) detection system was developed for the Melbourne microprobe that allows the spatial mapping of the luminescence signal along with the signals from RBS and PIXE. Homoepitaxial diamond growth has been studied and remarkable shifts in the characteristic blue luminescence of diamond towards the green were observed in the overgrowth. This has been tentatively identified as being due to transition metal inclusions in the epitaxial layers. 8 refs., 2 refs.

Design of a negative ion neutral beam system for TNS

International Nuclear Information System (INIS)

Easoz, J.R.

1978-05-01

A conceptual design of a neutral beam line based on the neutralization of negative deuterium ions is presented. This work is a detailed design of a complete neutral beam line based on using negative ions from a direct extraction source. Anticipating major technological advancements, beam line components have been scaled including the negative ion sources and components for the direct energy recovery of charged beams and high speed cryogenic pumping. With application to the next step in experimental fusion reactors (TNS), the neutral beam injector system that has been designed provides 10 MW of 200 keV neutral deuterium atoms. Several arms are required for plasma ignition

Advanced design of positive-ion sources for neutral-beam applications

International Nuclear Information System (INIS)

Marguerat, E.F.; Haselton, H.H.; Menon, M.M.; Schechter, D.E.; Stirling, W.L.; Tsai, C.C.

1982-01-01

The APIS ion source is being developed to meet a goal of producing ion beams of less than or equal to 200 keV, 100 A, with 10-30-s pulse lengths. In a continuing effort to advance the state of the art and to produce long pulse ion beams, APIS ion sources with grid dimensions of 10 x 25 cm, 13 x 43 cm, and 16 x 48 cm are being developed. In the past year, the 10- x 25-cm ion source has been operated to produce ion beams in excess of 100 keV for many seconds pulse length. An advanced design concept is being pursued with the primary objectives to improve radiation protection, reduce fabrication costs, and simplify maintenance. The source magnetic sheild will be designed as a vacuum enclosure to house all source components. The electrical insulation requirements of energy recovery are also considered. Because of the frequent maintenance requirements, the electron emitter assembly will be designed with a remote handling capability. A new accelerator design which incorporates the necessary neutron shielding and associated steering gimbal system is also described

Electron-ion recombination in merged beams

International Nuclear Information System (INIS)

Wolf, A.; Habs, D.; Lampert, A.; Neumann, R.; Schramm, U.; Schuessler, T.; Schwalm, D.

1993-01-01

Detailed studies of recombination processes between electrons and highly charged ions have become possible by recent improvements of merged-beams experiments. We discuss in particular measurements with stored cooled ion beams at the Test Storage Ring (TSR) in Heidelberg. The cross section of dielectronic recombination was measured with high energy resolution for few-electron systems up to the nuclear charge of Cu at a relative energy up to 2.6 keV. At low energy (∼0.1 eV) total recombination rates of several ions were measured and compared with calculated radiative recombination rates. Laser-stimulated recombination of protons and of C 6+ ions was investigated as a function of the photon energy using visible radiation. Both the total recombination rates and the stimulated recombination spectra indicate that in spite of the short interaction time in merged beams, also collisional capture of electrons into weakly bound levels (related to three-body recombination) could be important

Characteristics of > 290 keV magnetosheath ions

Directory of Open Access Journals (Sweden)

A. Rigas

Full Text Available We performed a statistical analysis of 290-500 keV ion data obtained by IMP-8 during the years 1982-1988 within the earth's magnetosheath and analysed in detail some time periods withdistinct ion bursts. These studies reveal the following characteristics for magnetosheath 290-500 keV energetic ions: (a the occurrence frequency and the flux of ions increase with increasing geomagnetic activity as indicated by the Kp index; the occurrence frequency was found to be as high as P > 42% for Kp > 2, (b the occurrence frequency in the dusk magnetosheath was found to be slightly dependent on the local time and ranged between ~30% and ~46% for all Kp values; the highest occurrence frequency was detected near the dusk magnetopause (21 LT, (c the high energy ion bursts display a dawn-dusk asymmetry in their maximum fluxes, with higher fluxes appearing in the dusk magnetosheath, and (d the observations in the dusk magnetosheath suggest that there exist intensity gradients of energetic ions from the bow shock toward the magnetopause. The statistical results are consistent with the concept that leakage of magnetospheric ions from the dusk magnetopause is a semi-permanent physical process often providing the magnetosheath with high energy (290-500 keV ions.Key words. Magnetospheric physics (magnetosheath; planetary magnetospheres. Space plasma physics (shock waves.

High repetition rate intense ion beam source

International Nuclear Information System (INIS)

Hammer, D.A.; Glidden, S.C.; Noonan, B.

1992-01-01

This final report describes a ≤ 150kV, 40kA, 100ns high repetition rate pulsed power system and intense ion beam source which is now in operation at Cornell University. Operation of the Magnetically-controlled Anode Plasma (MAP) ion diode at > 100Hz (burst mode for up to 10 pulse bursts) provides an initial look at repetition rate limitations of both the ion diode and beam diagnostics. The pulsed power systems are capable of ≥ 1kHz operation (up to 10 pulse bursts), but ion diode operation was limited to ∼100Hz because of diagnostic limitations. By varying MAP diode operating parameters, ion beams can be extracted at a few 10s of keV or at up to 150keV, the corresponding accelerating gap impedance ranging from about 1Ω to about 10Ω. The ability to make hundreds of test pulses per day at an average repetition rate of about 2 pulses per minute permits statistical analysis of diode operation as a function of various parameters. Most diode components have now survived more than 10 4 pulses, and the design and construction of the various pulsed power components of the MAP diode which have enabled us to reach this point are discussed. A high speed data acquisition system and companion analysis software capable of acquiring pulse data at 1ms intervals (in bursts of up to 10 pulses) and processing it in ≤ min is described

Very low-energy and low-fluence ion beam bombardment of naked plasmid DNA

International Nuclear Information System (INIS)

Norarat, R.; Semsang, N.; Anuntalabhochai, S.; Yu, L.D.

2009-01-01

Ion beam bombardment of biological organisms has been recently applied to mutation breeding of both agricultural and horticultural plants. In order to explore relevant mechanisms, this study employed low-energy ion beams to bombard naked plasmid DNA. The study aimed at simulation of the final stage of the process of the ion beam bombardment of real cells to check whether and how very low-energy and low-fluence of ions can induce mutation. Argon and nitrogen ions at 5 keV and 2.5 keV respectively bombarded naked plasmid DNA pGFP to very low-fluences, an order of 10 13 ions/cm 2 . Subsequently, DNA states were analyzed using electrophoresis. Results provided evidences that the very low-energy and low-fluence ion bombardment indeed altered the DNA structure from supercoil to short linear fragments through multiple double strand breaks and thus induced mutation, which was confirmed by transfer of the bombarded DNA into bacteria Escherichia coli and subsequent expression of the marker gene.

Beam Spot Measurement on a 400 keV Electron Accelerator

DEFF Research Database (Denmark)

Miller, Arne

1979-01-01

A line probe is used to measure the beam spot radius and beam divergence at a 400 keV ICT electron accelerator, and a method is shown for reducing the line probe data in order to get the radial function.......A line probe is used to measure the beam spot radius and beam divergence at a 400 keV ICT electron accelerator, and a method is shown for reducing the line probe data in order to get the radial function....

750 keV beam line construction at the KEK

International Nuclear Information System (INIS)

Ishimaru, H.; Anami, S.; Inagaki, T.; Sakaue, T.; Itoh, K.; Fukumoto, S.

1976-01-01

The construction of 750 keV beam line of the KEK injector of the 12 GeV proton synchrotron was described. The beam line consists of the beam focusing quadrupoles, vacuum system, the electrostatic chopper and the various beam monitors. (author)

Test of a compact 750 keV H- preinjector

International Nuclear Information System (INIS)

Meitzler, C.R.; Datte, P.; Huson, F.R.; Kazimi, R.; Kronke, C.; Machida, S.; MacKay, W.; Ohnuma, S.; Raparia, D.; Sun, D.; Tompkins, P.; Ziegler, J.

1989-01-01

A 750 keV RFQ based accelerator is being developed at the Texas Accelerator Center. A modified magnetron ion source will produce 10--100 mA of 30 keV H - beam. A 35 keV transport line that transports the beam from the ion source to the entrance of the RFQ without becoming neutralized has been designed and is under construction. The RFQ is a 86 cm long, four rod structure that operates at 470 MHz. Results of tests on the cold model are reported. 5 refs

Ion beam mixing in Ag-Pd alloys

International Nuclear Information System (INIS)

Klatt, J.L.; Averback, R.S.; Peak, D.

1989-01-01

Ion beam mixing during 750 keV Kr + irradiation at 80 K was measured on a series of Ag-Pd alloys using Au marker atoms. The mixing in pure Ag was the greatest and it decreased monotonically with increasing Pd content, being a factor of 10 higher in pure Ag than in pure Pd. This large difference in mixing cannot be explained by the difference in cohesion energy between Ag and Pd in the thermodynamic model of ion beam mixing proposed by Johnson et al. [W. L. Johnson, Y. T. Cheng, M. Van Rossum, and M-A. Nicolet, Nucl. Instrum. Methods B 7/8, 657 (1985)]. An alternative model based on local melting in the cascade is shown to account for the ion beam mixing results in Ag and Pd

Ion beam techniques for analyzing polymers irradiated by ions

International Nuclear Information System (INIS)

Rickards, J.; Zironi, E.P.; Andrade, E.; Dominguez, B.

1992-01-01

In the study of the effects of ion beam irradiation of polymers very large doses can be administered in short times. Thousands of MGy can be produced in a small volume of a sample in a few minutes by bombarding with typical ion beam currents. For instance, in an experiment done to observe the effects of 750 keV proton irradiation PVC, using a collimator of 1 mm diameter, 1 μC of charge integration deposits a dose of 50 MGy. The use of ion beams also opens up the possibility of using the same beam for irradiation and for analysis of the effects, using the well known ion beam analysis techniques. PIXE allows the measurement of chlorine in PVC. Polymers containing fluorine can be measured with the resonant nuclear reaction (RNR) technique, which is specific only to certain elements. The amount of hydrogen in the sample and its profile can be obtained using energy recoil detection analysis (ERDA); carbon, oxygen, and nitrogen can be measured and profiled using Rutherford backscattering (RBS) and also using the (d,p) and (d, α) nuclear reactions (NR). Loss of mass is one effect that can be studied using these techniques. It was studied in two different polymers, PVC and CR-39, in order to determine carbon buildup during ion irradiation. It was concluded that carbon builds up following different mechanisms in these two materials, due to the different possibilities of forming volatile compounds. It is also suggested that CR-39 should be a good material for ion beam lithography. (author)

Ion acceleration in modulated electron beams

International Nuclear Information System (INIS)

Bonch-Osmolovskij, A.G.; Dolya, S.N.

1977-01-01

A method of ion acceleration in modulated electron beams is considered. Electron density and energy of their rotational motion are relatively low. However the effective ion-accelerating field is not less than 10 MeV/m. The electron and ion numbers in an individual bunch are also relatively small, although the number of produced bunches per time unit is great. Some aspects of realization of the method are considered. Possible parameters of the accelerator are given. At 50 keV electron energy and 1 kA beam current a modulation is realized at a wave length of 30 cm. The ion-accelerating field is 12 MeV/m. The bunch number is 2x10 3 in one pulse at a gun pulse duration of 2 μs. With a pulse repetition frequency of 10 2 Hz the number of accelerated ions can reach 10 13 -10 14 per second

A very sensitive nonintercepting beam average velocity monitoring system for the TRIUMF 300-keV injection line

International Nuclear Information System (INIS)

Yin, Y.; Laxdal, R.E.; Zelenski, A.; Ostroumov, P.

1997-01-01

A nonintercepting beam velocity monitoring system has been installed in the 300-keV injection line of the TRIUMF cyclotron to reproduce the injection energy for beam from different ion sources and to monitor any beam energy fluctuations. By using a programmable beam signal leveling method the system can work with a beam current dynamic range of 50 dB. Using synchronous detection, the system can detect 0.5 eV peak-to-peak energy modulation of the beam, sensitivity is 1.7x10 -6 . The paper will describe the principle and beam measurement results. copyright 1997 American Institute of Physics

High power pulse electron beam modification and ion implantation of Hg{sub 1-x}Cd{sub x}Te crystals

Energy Technology Data Exchange (ETDEWEB)

Vojtsekhovskij, A V; Remnev, G E [Tomsk Polytechnic Univ. (Russian Federation). Nuclear Physics Inst.; Opekunov, M S; Kokhanenko, A P; Korotaev, A G; Denisov, Yu A; Oucherenko, D A [Tomsk State Univ. (Russian Federation). Dept. of Radiophysics

1997-12-31

Hg{sub 1-x}Cd{sub x}Te (MCT) samples (x = 0.21 - 0.22) were irradiated by pulse electron beams at doses of 10{sup 13} to 10{sup 17} cm{sup -2}. The electron beams possessed the following parameters: 500 keV electron energy (30-40 A/cm{sup 2} electron current density, 60-80 ns current pulse); 200 keV electron energy (8- 10 A/cm{sup 2} electron current density, 100-200 ns current pulse). The electric conductivity and recombination of modified samples were investigated by the Hall effect and photoconductivity methods. For the 200 keV electron energy beam irradiation, the n-type surface regions were obtained under threshold mechanisms of donor defect generation. For the 500 keV electron energy beam irradiation, the maximum value of charge carrier lifetimes occur in the p- to n-type conductivity conversion range for the initial p-type crystals due to the conductivity compensation. MCT samples (x = 0.21 - 0.22) were implanted with Al ions at doses of 10{sup 12}-10{sup 16} cm{sup -2}. The ion beams possessed the following parameters: (1-10) A/cm{sup 2} ion current density, (100-200) ns current pulse; (150-450) keV Al ion (Al{sup +},Al{sup ++}, Al{sup +++}). The ion distribution and doping profiles were investigated by PIGE and Hall effect methods. Comparison between MCT samples after power pulse ion implantation and after standard ion implantation demonstrates differences in ion distribution, doping profiles and defect formation radiation mechanisms. (author). 3 figs., 8 refs.

Long-pulse beam acceleration of MeV-class H(-) ion beams for ITER NB accelerator.

Science.gov (United States)

Umeda, N; Kashiwagi, M; Taniguchi, M; Tobari, H; Watanabe, K; Dairaku, M; Yamanaka, H; Inoue, T; Kojima, A; Hanada, M

2014-02-01

In order to realize neutral beam systems in International Thermonuclear Experimental Reactor whose target is to produce a 1 MeV, 200 A/m(2) during 3600 s D(-) ion beam, the electrostatic five-stages negative ion accelerator so-called "MeV accelerator" has been developed at Japan Atomic Energy Agency. To extend pulse length, heat load of the acceleration grids was reduced by controlling the ion beam trajectory. Namely, the beam deflection due to the residual magnetic field of filter magnet was suppressed with the newly developed extractor with a 0.5 mm off-set aperture displacement. The new extractor improved the deflection angle from 6 mrad to 1 mrad, resulting in the reduction of direct interception of negative ions from 23% to 15% of the total acceleration power, respectively. As a result, the pulse length of 130 A/m(2), 881 keV H(-) ion beam has been successfully extended from a previous value of 0.4 s to 8.7 s. This is the first long pulse negative ion beam acceleration over 100 MW/m(2).

Large area negative ion source for high voltage neutral beams

International Nuclear Information System (INIS)

Poulsen, P.; Hooper, E.B. Jr.

1979-11-01

A source of negative deuterium ions in the multi-ampere range is described that is readily extrapolated to reactor size, 10 amp or more of neutral beam, that is of interest in future experiments and reactors. The negative ion source is based upon the double charge exchange process. A beam of positive ions is created and accelerated to an energy at which the attachment process D + M → D - + M + proceeds efficiently. The positive ions are atomically neutralized either in D 2 or in the charge exchange medium M. Atomic species make a second charge exchange collision in the charge target to form D - . For a sufficiently thick target, the beam reaches an equilibrium fraction of negative ions. For reasons of efficiency, the target is typically alkali metal vapor; this experiment uses sodium. The beam of negative ions can be accelerated to high (>200 keV) energy, the electrons stripped from the ions, and a high energy neutral beam formed

Effects of low-energy ion beam bombardment on metal oxides

International Nuclear Information System (INIS)

Sullivan, J.L.; Saied, S.O.; Choudhury, T.

1993-01-01

This paper describes a study of Ar ion bombardment damage in metal oxides. In the energy range 1 to 5 keV, preferential oxygen removal and reduction of the oxides was found to depend on ion current density, but to be independent of beam energy. (author)

Extraction design and low energy beam transport optimization of space charge dominated multispecies ion beam sources

International Nuclear Information System (INIS)

Delferriere, O.; De Menezes, D.

2004-01-01

In all accelerator projects, the low energy part of the accelerator has to be carefully optimized to match the beam characteristic requirements of the higher energy parts. Since 1994 with the beginning of the Injector of Protons for High Intensity (IPHI) project and Source of Light Ions with High Intensities (SILHI) electron cyclotron resonance (ECR) ion source development at CEA/Saclay, we are using a set of two-dimensional (2D) codes for extraction system optimization (AXCEL, OPERA-2D) and beam transport (MULTIPART). The 95 keV SILHI extraction system optimization has largely increased the extracted current, and improved the beam line transmission. From these good results, a 130 mA D + extraction system for the International Fusion Material Irradiation Facility project has been designed in the same way as SILHI one. We are also now involved in the SPIRAL 2 project for the building of a 40 keV D + ECR ion source, continuously tunable from 0.1 to 5 mA, for which a special four-electrode extraction system has been studied. In this article we will describe the 2D design process and present the different extraction geometries and beam characteristics. Simulation results of SILHI H + beam emittance will be compared with experimental measurements

Development of high-current pulsed heavy-ion-beam technology for applications to materials processing

Energy Technology Data Exchange (ETDEWEB)

Ito, Hiroaki; Ochiai, Yasushi; Masugata, Katsumi [University of Toyama, Toyama (Japan)

2011-12-15

Development of intense pulsed heavy ion beam technology for applications to materials processing is described. We have developed a magnetically insulated ion diode for the generation of intense pulsed metallic ion beams in which a vacuum arc plasma gun is used as the ion source. When the ion diode was successfully operated at a diode voltage of 220 kV and a diode current of 10 kA, an ion beam with an ion current density of >200 A/cm{sup 2} and a pulse duration of 40 ns was obtained. The ion composition was evaluated by using a Thomson parabola spectrometer, and the ion beam consisted of aluminum ions (Al{sup (1-3)+}) with an energy of 140 - 740 keV and protons with an energy of 160 - 190 keV; the purity was estimated to be 89%, which was much higher than that of the pulsed ion beam produced in a conventional ion diode. The development of a bipolar pulse accelerator (BPA) was reported in order to improve the purity of intense pulsed ion beams. A double coaxial type bipolar pulse generator was developed as the power supply of the BPA. When a bipolar pulse with a voltage of {+-}90 kV and a pulse duration of about 65 ns was applied to the drift tube of the BPA, the ion beam with an ion current density of 2 A/cm{sup 2} and a pulse duration of 30 ns was observed 25 mm downstream from the cathode surface, which suggested bipolar pulse acceleration.

Investigation of fullerene ions in crossed-beams experiments

International Nuclear Information System (INIS)

Hathiramani, D.; Scheier, P.; Braeuning, H.; Trassl, R.; Salzborn, E.; Presnyakov, L.P.; Narits, A.A.; Uskov, D.B.

2003-01-01

Employing the crossed-beams technique, we have studied the interaction of fullerene ions both with electrons and He 2+ -ions. Electron-impact ionization cross sections for C 60 q+ (q=1,2,3) have been measured at electron energies up to 1000 eV. Unusual features in shape and charge state dependence have been found, which are not observed for atomic ions. The evaporative loss of neutral C 2 fragments in collisions with electrons indicates the presence of two different mechanisms. In a first-ever ion-ion crossed-beams experiment involving fullerene ions a cross section of (1.05 ± 0.06) x 10 -15 cm 2 for charge transfer in the collision C 60 + + He 2+ at 117.2 keV center-of-mass energy has been obtained

Spatial distribution of upstream magnetospheric ≥50 keV ions

Directory of Open Access Journals (Sweden)

G. C. Anagnostopoulos

2000-01-01

Full Text Available We present for the first time a statistical study of \\geq50 keV ion events of a magnetospheric origin upstream from Earth's bow shock. The statistical analysis of the 50-220 keV ion events observed by the IMP-8 spacecraft shows: (1 a dawn-dusk asymmetry in ion distributions, with most events and lower intensities upstream from the quasi-parallel pre-dawn side (4 LT-6 LT of the bow shock, (2 highest ion fluxes upstream from the nose/dusk side of the bow shock under an almost radial interplanetary magnetic field (IMF configuration, and (3 a positive correlation of the ion intensities with the solar wind speed and the index of geomagnetic index Kp, with an average solar wind speed as high as 620 km s-1 and values of the index Kp > 2. The statistical results are consistent with (1 preferential leakage of ~50 keV magnetospheric ions from the dusk magnetopause, (2 nearly scatter free motion of ~50 keV ions within the magnetosheath, and (3 final escape of magnetospheric ions from the quasi-parallel dawn side of the bow shock. An additional statistical analysis of higher energy (290-500 keV upstream ion events also shows a dawn-dusk asymmetry in the occurrence frequency of these events, with the occurrence frequency ranging between ~16%-~34% in the upstream region.Key words. Interplanetary physics (energetic particles; planetary bow shocks

Spatial distribution of upstream magnetospheric ≥50 keV ions

Directory of Open Access Journals (Sweden)

G. Kaliabetsos

Full Text Available We present for the first time a statistical study of geq50 keV ion events of a magnetospheric origin upstream from Earth's bow shock. The statistical analysis of the 50-220 keV ion events observed by the IMP-8 spacecraft shows: (1 a dawn-dusk asymmetry in ion distributions, with most events and lower intensities upstream from the quasi-parallel pre-dawn side (4 LT-6 LT of the bow shock, (2 highest ion fluxes upstream from the nose/dusk side of the bow shock under an almost radial interplanetary magnetic field (IMF configuration, and (3 a positive correlation of the ion intensities with the solar wind speed and the index of geomagnetic index Kp, with an average solar wind speed as high as 620 km s-1 and values of the index Kp > 2. The statistical results are consistent with (1 preferential leakage of ~50 keV magnetospheric ions from the dusk magnetopause, (2 nearly scatter free motion of ~50 keV ions within the magnetosheath, and (3 final escape of magnetospheric ions from the quasi-parallel dawn side of the bow shock. An additional statistical analysis of higher energy (290-500 keV upstream ion events also shows a dawn-dusk asymmetry in the occurrence frequency of these events, with the occurrence frequency ranging between ~16%-~34% in the upstream region.Key words. Interplanetary physics (energetic particles; planetary bow shocks

Ar ion beam mixing at gold-silicon interfaces

International Nuclear Information System (INIS)

Li Yupu; Chen Jian; Liu Jiarui; Zhang Qichu

1987-01-01

Ar-ion beam mixing at Au-Si interface is investigated systematically as a function of the energy of Ar-ion beam (100-300 keV), dose (5 x 10 15 - 8 x 10 16 /cm 2 ), dose rate (1.6 - 16 μA/cm 2 ) and substrate temperature (77 - 573 K). Very good ion beam mixing is obtained when the Ar-ion range distribution R p ± ΔR p fits the gold film thickness, where R p is the projected range and ΔR p is the standard deviation. At LN 2 temperature, the mixing amount is proportional to the square root of the dose but independent of the dose rate and the mixing process can be explained by the random walking model for the cascade process. At room temperature the dose rate effect is observed because of the beam current induced temperature effect. The temperature effect of the mixing amount, the uniformity, the thickness of mixing layers and the phase structure are observed

Application of ion beams for polymeric carbon based biomaterials

International Nuclear Information System (INIS)

Evelyn, A.L.

2001-01-01

Ion beams have been shown to be quite suitable for the modification and analysis of carbon based biomaterials. Glassy polymeric carbon (GPC), made from cured phenolic resins, has a high chemical inertness that makes it useful as a biomaterial in medicine for drug delivery systems and for the manufacture of heart valves and other prosthetic devices. Low and high-energy ion beams have been used, with both partially and fully cured phenolic resins, to enhance biological cell/tissue growth on, and to increase tissue adhesion to GPC surfaces. Samples bombarded with energetic ion beams in the keV to MeV range exhibited increased surface roughness, measured using optical microscopy and atomic force microscopy. Ion beams were also used to perform nuclear reaction analyses of GPC encapsulated drugs for use in internal drug delivery systems. The results from the high energy bombardment were more dramatic and are shown in this paper. The interaction of energetic ions has demonstrated the useful application of ion beams to enhance the properties of carbon-based biomaterials

Linac4 45 keV Proton Beam Measurements

CERN Document Server

Bellodi, G; Hein, L M; Lallement, J-B; Lombardi, A M; Midttun, O; Scrivens, R; Posocco, P A

2013-01-01

Linac4 is a 160 MeV normal-conducting H- linear accelerator, which will replace the 50 MeV proton Linac2 as injector for the CERN proton complex. Commissioning of the low energy part - comprising the H - source, a 45 keV Low Energy Beam Transport line (LEBT), a 3 MeV Radiofrequency Quadrupole (RFQ) and a Medium Energy Beam Transport (MEBT) - will start in fall 2012 on a dedicated test stand installation. In preparation to this, preliminary measurements were taken using a 45 keV proton source and a temporary LEBT setup, with the aim of characterising the output beam by comparison with the predictions of simulations. At the same time this allowed a first verification of the functionalities of diagnostics instrumentation and acquisition software tools. Measurements of beam profile, emittance and intensity were taken in three different setups: right after the source, after the first and after the second LEBT solenoids respectively. Particle distributions were reconstructed from emittance scan...

Beam Angular Divergence Effects in Ion Implantation

International Nuclear Information System (INIS)

Horsky, T. N.; Hahto, S. K.; Bilbrough, D. G.; Jacobson, D. C.; Krull, W. A.; Goldberg, R. D.; Current, M. I.; Hamamoto, N.; Umisedo, S.

2008-01-01

An important difference between monomer ion beams and heavy molecular beams is a significant reduction in beam angular divergence and increased on-wafer angular accuracy for molecular beams. This advantage in beam quality stems from a reduction in space-charge effects within the beam. Such improved angular accuracy has been shown to have a significant impact on the quality and yield of transistor devices [1,12]. In this study, B 18 H x + beam current and angular divergence data collected on a hybrid scanned beam line that magnetically scans the beam across the wafer is presented. Angular divergence is kept below 0.5 deg from an effective boron energy of 200 eV to 3000 eV. Under these conditions, the beam current is shown analytically to be limited by space charge below about 1 keV, but by the matching of the beam emittance to the acceptance of the beam line above 1 keV. In addition, results of a beam transport model which includes variable space charge compensation are presented, in which a drift mode B 18 H x + beam is compared to an otherwise identical boron beam after deceleration. Deceleration is shown to introduce significant space-charge blow up resulting in a large on-wafer angular divergence. The divergence effects introduced by wafer charging are also discussed.

Broad-beam, high current, metal ion implantation facility

International Nuclear Information System (INIS)

Brown, I.G.; Dickinson, M.R.; Galvin, J.E.; Godechot, X.; MacGill, R.A.

1990-07-01

We have developed a high current metal ion implantation facility with which high current beams of virtually all the solid metals of the Periodic Table can be produced. The facility makes use of a metal vapor vacuum arc ion source which is operated in a pulsed mode, with pulse width 0.25 ms and repetition rate up to 100 pps. Beam extraction voltage is up to 100 kV, corresponding to an ion energy of up to several hundred keV because of the ion charge state multiplicity; beam current is up to several Amperes peak and around 10 mA time averaged delivered onto target. Implantation is done in a broad-beam mode, with a direct line-of-sight from ion source to target. Here we describe the facility and some of the implants that have been carried out using it, including the 'seeding' of silicon wafers prior to CVD with titanium, palladium or tungsten, the formation of buried iridium silicide layers, and actinide (uranium and thorium) doping of III-V compounds. 16 refs., 6 figs

Microdosimetry for a carbon ion beam using track-etched detectors

International Nuclear Information System (INIS)

Ambrozova, I.; Ploc, O.; Davidkova, M.; Vondracek, V.; Sefl, M.; Stepan, V.; Pachnerova Brabcova, K.; Incerti, S.

2015-01-01

Track-etched detectors (TED) have been used as linear energy transfer (LET) spectrometers in heavy ion beams for many years. LET spectra and depth -dose distribution of a carbon ion beam were measured behind polymethylmethacrylate degraders at Heavy Ion Medical Accelerator in Chiba, Japan. The measurements were performed along monoenergetic beam with energy 290 MeV u -1 in different positions: (1) at beam extraction area, (2) at beginning, (3) maximum and (4) behind the Bragg peak region (0, 117, 147 and 151 mm of water-equivalent depth, respectively). The LET spectra inside and outside of the primary ion beam have been evaluated. TED record only heavy charged particles with LET above 8 -10 keV μm -1 , while electrons and ions with lower LET are not detected. The Geant4 simulation toolkit version 4.9.6.P01 has been used to estimate the contribution of non-detected particles to absorbed dose. Presented results demonstrate the applicability of TED for microdosimetry measurements in therapeutic carbon ion beams. (authors)

Developments at an electrostatic cryogenic storage ring for electron-cooled keV energy ion beams

International Nuclear Information System (INIS)

Vogel, Stephen

2016-01-01

This work is devoted to final setup activities and the commissioning of an electrostatic cryogenic storage ring (CSR) at the Max Planck Institute for Nuclear Physics (MPIK) in Heidelberg. The first cryogenic operation of CSR in 2015 has been documented and characterized using a set of non-destructive beam diagnostic tools developed within this work. These are (1) the current pick-up system for the determination of the current of the stored ion beam and its velocity, (2) a position pick-up system for measuring the transverse position of the ion beam center at six symmetric locations of the storage ring circumference, and (3) a Schottky pick-up system for the monitoring of coasting ion beams. Despite the requirements imposed by the cryogenic operation, the developed diagnostic system demonstrated its full functionality. First characterizations of the storage ring properties and the performance of the diagnostic system are presented. Based on previous work, an electron cooling system for CSR has been developed and largely realized. With the implementation into CSR in 2016, the electron cooler will enhance the storage ring into a unique experimental facility for electron-ion collision studies. With this CSR is on the track to become the first cryogenic storage ring featuring actively cooled ion beams.

The beam diagnostic instruments in Beijing radioactive ion-beam facilities isotope separator on-line

International Nuclear Information System (INIS)

Ma, Y.; Cui, B.; Ma, R.; Tang, B.; Chen, L.; Huang, Q.; Jiang, W.

2014-01-01

The beam diagnostic instruments for Beijing Radioactive Ion-beam Facilities Isotope Separator On-Line are introduced [B. Q. Cui, Z. H. Peng, Y. J. Ma, R. G. Ma, B. Tang, T. Zhang, and W. S. Jiang, Nucl. Instrum. Methods 266, 4113 (2008); T. J. Zhang, X. L. Guan, and B. Q. Cui, in Proceedings of APAC 2004, Gyeongju, Korea, 2004, http://www.jacow.org , p. 267]. For low intensity ion beam [30–300 keV/1 pA–10 μA], the beam profile monitor, the emittance measurement unit, and the analyzing slit will be installed. For the primary proton beam [100 MeV/200 μA], the beam profile scanner will be installed. For identification of the nuclide, a beam identification unit will be installed. The details of prototype of the beam diagnostic units and some experiment results will be described in this article

ORNL 150 keV neutral beam test facility

International Nuclear Information System (INIS)

Gardner, W.L.; Kim, J.; Menon, M.M.; Schilling, G.

1977-01-01

The 150 keV neutral beam test facility provides for the testing and development of neutral beam injectors and beam systems of the class that will be needed for the Tokamak Fusion Test Reactor (TFTR) and The Next Step (TNS). The test facility can simulate a complete beam line injection system and can provide a wide range of experimental operating conditions. Herein is offered a general description of the facility's capabilities and a discussion of present system performance

Case Study of Ion Beams Observed By Cluster At Perigee

Science.gov (United States)

Sergeev, V.; Sauvaud, J.-A.; Perigee Beam Team

During substorms the short beams of ions in the keV-to-tens keV energy range are injected into the auroral flux tubes from the magnetotail (sometimes extending up to >100 keV energy) carrying the information on the source distance, scale-size and temporal history of plasma acceleration. We present observations with the CLUSTER crossing inward the auroral zone flux tubes at ~4Re distance near its perigee during the substorm activity on February 14, 2001. The ion beams cover the same region (poleward half) of the auroral oval where the low-energy ions are extracted from the ionosphere, and where the small-scale transient transverse Alfven waves are observed which carry predominantly the downward parallel Poynting flux into the ionosphere. The multiple beams were basically confirmed to be the transient effects, although some effects including the (spatial) velocity filter and the parallel electric fields (im- posed by quasineutrality requirement) may complicate the interpretation. The gener- ation region of ion beams is not limited to most poleward, newly-reconnected flux tubes; the beam generation region could extend across magnetic field inward by as much as >100km (if mapped to the ionosphere). Surprising variety of injection dis- tances observed nearly simultaneously (ranging between >60 Re and ~10 Re) have been inferred when using the full available energy and time resolution, with shorter injection distances be possibly associated with the flow braking process. The beam multiplicity often displays the apparent ~3 min quasiperiodicity inherent to the basic dissipation process, it was not yet explained by any substorm theory.

Design study of 500 keV H- accelerator for ITER NB system

International Nuclear Information System (INIS)

Kashiwagi, Mieko; Inoue, Takashi

2009-02-01

In the neutral beam (NB) system for heating and current drive of ITER, detailed designs of a five stage Multi Aperture and Multi Grid (MAMuG) accelerator to produce 1 MeV 40 A D- and 870 keV 46 A H - ion beams are ongoing. However, it was expected that shinethrough power from the 870 keV H 0 beam was above tolerable level for the maximum plasma density prior to any H mode. Therefore, it was required to reduce the beam energy to 500 keV with maintaining high beam current. The objective of this study is to identify necessary modifications from the original five stage accelerator to a three stage accelerator to produce 500 keV H - ion beam through the physics design based on a beam optics, a beamlet steering and a stripping loss of negative ions. In the beam optics study utilizing a 2D beam analysis code, necessary modifications in aperture diameter, grid thickness and grid spacing were proposed. In a 3D multi beamlets analysis, aperture offsets in the ESG (Electron Suppression Grid) to compensate beamlet deflections and another aperture offset in the GRG (GRounded Grid) to steer the beamlets to a focal point were designed. In a 3D gas flow analysis, it was confirmed that stripping loss of negative ions was not changed and gas density around the beam source satisfied a design requirement for high voltage holding in a modified accelerator configuration proposed in the beam optics study. Finally, the items for modification were summarized. (author)

Diagnosis of high-intensity pulsed heavy ion beam generated by a novel magnetically insulated diode with gas puff plasma gun.

Science.gov (United States)

Ito, H; Miyake, H; Masugata, K

2008-10-01

Intense pulsed heavy ion beam is expected to be applied to materials processing including surface modification and ion implantation. For those applications, it is very important to generate high-purity ion beams with various ion species. For this purpose, we have developed a new type of a magnetically insulated ion diode with an active ion source of a gas puff plasma gun. When the ion diode was operated at a diode voltage of about 190 kV, a diode current of about 15 kA, and a pulse duration of about 100 ns, the ion beam with an ion current density of 54 A/cm(2) was obtained at 50 mm downstream from the anode. By evaluating the ion species and the energy spectrum of the ion beam via a Thomson parabola spectrometer, it was confirmed that the ion beam consists of nitrogen ions (N(+) and N(2+)) of energy of 100-400 keV and the proton impurities of energy of 90-200 keV. The purity of the beam was evaluated to be 94%. The high-purity pulsed nitrogen ion beam was successfully obtained by the developed ion diode system.

Kβ spectra of heliumlike chromium from an electron-beam ion trap

International Nuclear Information System (INIS)

Decaux, V.; Beiersdorfer, P.; Elliott, S.; Osterheld, A.

1993-01-01

Kβ spectra of heliumlike chromium have been recorded using the Livermore electron-beam ion trap (EBIT) with a high-resolution Bragg crystal spectrometer in the von Hamos configuration, in the wavelong range from 1.870 Angstrom. Measurements have been made both for direct excitation at an electron beam energy of 8 k and dielectronic recombination around the KLM resonance energy of 5 keV. In order to evaluate the resonance strength the lithiumlike dielectronic satellites, we used a data routine technique to accumulate spectra at 15 different beam energies between 4.96 and 5.28 keV. Results are compared to theoretical calculations using the multiconfiguration parametric potential method

Surface nanostructuring of TiO2 thin films by ion beam irradiation

International Nuclear Information System (INIS)

Romero-Gomez, P.; Palmero, A.; Yubero, F.; Vinnichenko, M.; Kolitsch, A.; Gonzalez-Elipe, A.R.

2009-01-01

This work reports a procedure to modify the surface nanostructure of TiO 2 anatase thin films through ion beam irradiation with energies in the keV range. Irradiation with N + ions leads to the formation of a layer with voids at a depth similar to the ion-projected range. By setting the ion-projected range a few tens of nanometers below the surface of the film, well-ordered nanorods appear aligned with the angle of incidence of the ion beam. Slightly different results were obtained by using heavier (S + ) and lighter (B + ) ions under similar conditions

Colliding beam studies of electron detachement from H- by multiply-charged ions

International Nuclear Information System (INIS)

Melchert, F.; Benner, M.; Kruedener, S.; Schulze, R.; Meuser, S.; Pfaff, S.; Petri, S.; Huber, K.; Salzborn, E.; Presnyakov, L.P.; Uskov, D.B.

1993-01-01

Employing the crossed-beams technique, we have investigated electron-detachment processes from H - in collisions with multiply-charged noble gas ions A q+ . Absolute cross sections for single- and double-electron removal have been measured at center-of-mass energies from 50 keV to 200 keV and charge states q up to 8

Performance of MBE-4: An experimental multiple beam induction linear accelerator for heavy ions

International Nuclear Information System (INIS)

Warwick, A.I.; Fessenden, T.J.; Keefe, D.; Kim, C.H.; Meuth, H.

1988-06-01

An experimental induction linac, called MBE-4, has been constructed to demonstrate acceleration and current amplification of multiple heavy ion beams. This work is part of a program to study the use of such an accelerator as a driver for heavy ion inertial fusion. MBE-4 is 16m long and accelerates four space-charge-dominated beams of singly-charged cesium ions, in this case from 200 keV to 700 keV, amplifying the current in each beam from 10mA by a factor of nine. Construction of the experiment was completed late in 1987 and we present the results of detailed measurements of the longitudinal beam dynamics. Of particular interest is the contribution of acceleration errors to the growth of current fluctuations and to the longitudinal emittance. The effectiveness of the longitudinal focusing, accomplished by means of the controlled time dependence of the accelerating fields, is also discussed. 4 refs., 5 figs., 1 tab

Extreme ultra-violet emission spectroscopy of highly charged gadolinium ions with an electron beam ion trap

International Nuclear Information System (INIS)

Ohashi, Hayato; Nakamura, Nobuyuki; Sakaue, Hiroyuki A

2013-01-01

We present extreme ultra-violet emission spectra of highly charged gadolinium ions obtained with an electron beam ion trap at electron energies of 0.53–1.51 keV. The electron energy dependence of the spectra in the 5.7–11.3 nm range is compared with calculation with the flexible atomic code. (paper)

A review of JAERI R and D activities on the negative-ion-based neutral beam injection system

International Nuclear Information System (INIS)

Ohara, Yoshihiro; Akiba, Masato; Araki, Masanori

1990-08-01

R and D efforts to realize a negative-ion-based neutral beam injection system have been made intensively at JAERI for the past several years. Concerning a high current negative ion source which is one of the most important R and D items, a 10 A, 50 keV negative hydrogen ion beam has been produced successfully. The negative ion beam current and the current density correspond already to the value required for the negative-ion-based NBI system. In order to increase the beam energy further, a 350 keV, 0.1 A test stand has been constructed, and the test of a high energy negative ion accelerator has started. Concerning a high energy acceleration power supply, an inverter type power supply which has a high speed AC switch was proposed and applied to the 100 kV, 5 A power supply for JAERI Electron Beam Irradiation Stand. The reliable operation indicates that the concept of this system can be applied for a MV class acceleration power supply. As one of the promising candidates for a beam dump cooling element, an externally-finned swirl tube was proposed and tested to have a high burnout heat flux of 4.1 kW/cm 2 , which is high enough for the next NBI system. The R and Ds on the negative-ion-based NBI system have made great progress at JAERI in recent years. The construction of a 500 keV class NBI system has become realistic from the engineering point of view. (author)

Direct energy recovery from helium ion beams by a beam direct converter with secondary electron suppressors

International Nuclear Information System (INIS)

Yoshikawa, K.; Yamamoto, Y.; Toku, H.; Kobayashi, A.; Okazaki, T.

1989-01-01

A 5-yr study of beam direct energy conversion was performed at the Kyoto University Institute of Atomic Energy to clarify the essential features of direct energy recovery from monoenergetic ion beams so that the performance characteristics of energy recovery can be predicted reasonably well by numerical calculations. The study used an improved version of an electrostatically electron-suppressed beam direct converter. Secondary electron suppressor grids were added, and a helium ion beam was used with typical parameters of 15.4 keV, 90 mA, and 100 ms. This paper presents a comparison of experimental results with numerical results by the two-dimensional Kyoto University Advanced Dart (KUAD) code, including evaluation of atomic processes

Negative-ion-based neutral beams for fusion

International Nuclear Information System (INIS)

Cooper, W.S.; Anderson, O.A.; Chan, C.F.

1987-10-01

To maximize the usefulness of an engineering test reactor (e.g., ITER, TIBER), it is highly desirable that it operate under steady-state conditions. The most attractive option for maintaining the circulating current needed in the center of the plasma is the injection of powerful beams of neutral deuterium atoms. The beam simultaneously heats the plasma. At the energies required, in excess of 500 keV, such beams can be made by accelerating D - ions and then removing the electron. Sources are being developed that generate the D - ions in the volume of a specially constructed plasma discharge, without the addition of cesium. These sources must operate with minimum gas flow, to avoid stripping the D - beam, and with minimum electron output. We are designing at LBL highly efficient electrostatic accelerators that combine electric strong-focusing with dc acceleration and offer the possibility of varying the beam energy at constant current while minimizing breakdown. Some form of rf acceleration may also be required. To minimize irradiation of the ion sources and accelerators, the D - beam can be transported through a maze in the neutron shielding. The D - ions can be converted to neutrals in a gas or plasma target, but advances in laser and mirror technology may make possible very efficient photodetachment systems by the time an ETR becomes operational. 9 refs., 4 figs

High-energy acceleration of an intense negative ion beam

International Nuclear Information System (INIS)

Takeiri, Y.; Ando, A.; Kaneko, O.

1995-02-01

A high-current H - ion beam has been accelerated with the two-stage acceleration. A large negative hydrogen ion source with an external magnetic filter produces more than 10 A of the H - ions from the grid area of 25cm x 50cm with the arc efficiency of 0.1 A/kW by seeding a small amount of cesium. The H - ion current increases according to the 3/2-power of the total beam energy. A 13.6 A of H - ion beam has been accelerated to 125 keV at the operational gas pressure of 3.4 mTorr. The optimum beam acceleration is achieved with nearly the same electric fields in the first and the second acceleration gaps on condition that the ratio of the first acceleration to the extraction electric fields is adjusted for an aspect ratio of the extraction gap. The ratio of the acceleration drain current to the H - ion current is more than 1.7. That is mainly due to the secondary electron generated by the incident H - ions on the extraction grid and the electron suppression grid. The neutralization efficiency was measured and agrees with the theoretical calculation result. (author)

JT-60 negative ion beam NBI apparatus. Present state of its construction and initial experimental results

Energy Technology Data Exchange (ETDEWEB)

Kuriyama, Masaaki [Japan Atomic Energy Research Inst., Naka, Ibaraki (Japan). Naka Fusion Research Establishment

1997-02-01

The NBI (Neutral Beam Injection) apparatus used for negative ion at first in the world, has an aim to actually prove heating and electric current drive with high density plasma at the JT-60 and to constitute physical and technical bases for selection and design of heating apparatus of ITER (International Thermal Nuclear Fusion Experimental Reactor). Construction of 500 KeV negative ion NBI apparatus for the JT-60 started to operate on 1993 was completed at March, 1996. On the way, at a preliminary test on forming and acceleration of the negative ion beam using a portion of this apparatus, 400 KeV and 13.5 A/D of the highest deuterium negative ion beam acceleration in the world was obtained successfully, which gave a bright forecasting of the plasma heating and electric current drive experiment using the negative ion NBI apparatus. After March, 1996, some plans to begin beam incident experiment at the JT-60 using the negative ion NBI apparatus and to execute the heating and electric current drive experiment at the JT-60 under intending increase of beam output are progressed. (G.K.)

Focused ion beam induced deflections of freestanding thin films

International Nuclear Information System (INIS)

Kim, Y.-R.; Chen, P.; Aziz, M. J.; Branton, D.; Vlassak, J. J.

2006-01-01

Prominent deflections are shown to occur in freestanding silicon nitride thin membranes when exposed to a 50 keV gallium focused ion beam for ion doses between 10 14 and 10 17 ions/cm 2 . Atomic force microscope topographs were used to quantify elevations on the irradiated side and corresponding depressions of comparable magnitude on the back side, thus indicating that what at first appeared to be protrusions are actually the result of membrane deflections. The shape in high-stress silicon nitride is remarkably flat-topped and differs from that in low-stress silicon nitride. Ion beam induced biaxial compressive stress generation, which is a known deformation mechanism for other amorphous materials at higher ion energies, is hypothesized to be the origin of the deflection. A continuum mechanical model based on this assumption convincingly reproduces the profiles for both low-stress and high-stress membranes and provides a family of unusual shapes that can be created by deflection of freestanding thin films under beam irradiation

Comparison of Ion Beam opening switch and plasma opening switch performance

International Nuclear Information System (INIS)

Greenly, J.R.; Rondeau, G.D.; Sheldon, H.T.; Dreike, P.L.

1986-01-01

The Ion Beam opening switch (IBOS) experiment has shown that an intense charge-neutralized ion beam can carry current across a vacuum magnetically-insulated transmission line and then transfer that current to a downstream load quickly. In the IBOS experiment, a 10 cm wide parallel plate transmission line was fed up to 100 kA peak current by a 4Ω, 100 ns pulser. An ion beam of up to 100 A/cm/sup 2/, 100-300 keV protons or carbon was injected through the anode of the line in a 10 cm x 10 cm region. The line terminated in either a 15 nH short circuit or an electron diode with variable gap. The ion beam switch was able to carry up to 70 kA of line current before load current began to flow. This model is also quantitatively consistent with the observation that switch conduction current is not linear with either injected ion beam current or switch area

Ion beam induces nitridation of silicon

International Nuclear Information System (INIS)

Petravic, M.; Williams, J.S.; Conway, M.

1998-01-01

High dose ion bombardment of silicon with reactive species, such as oxygen and nitrogen, has attracted considerable interest due to possible applications of beam-induced chemical compounds with silicon. For example, high energy oxygen bombardment of Si is now routinely used to form buried oxide layers for device purposes, the so called SIMOX structures. On the other hand, Si nitrides, formed by low energy ( 100 keV) nitrogen beam bombardment of Si, are attractive as oxidation barriers or gate insulators, primarily due to the low diffusivity of many species in Si nitrides. However, little data exists on silicon nitride formation during bombardment and its angle dependence, in particular for N 2 + bombardment in the 10 keV range, which is of interest for analytical techniques such as SIMS. In SIMS, low energy oxygen ions are more commonly used as bombarding species, as oxygen provides stable ion yields and enhances the positive secondary ion yield. Therefore, a large body of data can be found in the literature on oxide formation during low energy oxygen bombardment. Nitrogen bombardment of Si may cause similar effects to oxygen bombardment, as nitrogen and oxygen have similar masses and ranges in Si, show similar sputtering effects and both have the ability to form chemical compounds with Si. In this work we explore this possibility in some detail. We compare oxide and nitride formation during oxygen and nitrogen ion bombardment of Si under similar conditions. Despite the expected similar behaviour, some large differences in compound formation were found. These differences are explained in terms of different atomic diffusivities in oxides and nitrides, film structural differences and thermodynamic properties. (author)

Studies of heavy ion beam transport in a magnetic quadrupole channel

International Nuclear Information System (INIS)

Klabunde, J.; Reiser, M.; Schonlein, A.; Spadtke, P.; Struckmeier, J.

1983-01-01

In connection with the West German Heavy Ion Fusion Program the first stage (six periods) of a magnetic quadrupole channel (FODO type) to study the transport of intense ion beams was built at GSI. Different ion beams can be used and the variation of the brightness of these beams (hence of the tune depression sigma/sigma /SUB o/ ) is sufficiently large that regions of theoretically predicted instabilities can be covered. The initial studies are being carried out with a high-brightness beam of 190 keV Ar+ ions and currents of a few mA. Since the pulse length is > 0.5 ms and the pressure is between 10 -6 and 10 -7 torr partial space charge neutralization occurs. Clearing electrodes can be used to remove the electrons from the beam. Results of theoretical studies, measurements of charge neutralization effects and first results of transport experiments are reported

Improvement of voltage holding capability in the 500 keV negative ion source for JT-60SA.

Science.gov (United States)

Tanaka, Y; Hanada, M; Kojima, A; Akino, N; Shimizu, T; Ohshima, K; Inoue, T; Watanabe, K; Taniguchi, M; Kashiwagi, M; Umeda, N; Tobari, H; Grisham, L R

2010-02-01

Voltage holding capability of JT-60 negative ion source that has a large electrostatic negative ion accelerator with 45 cm x 1.1 m acceleration grids was experimentally examined and improved to realize 500 keV, 22 A, and 100 s D- ion beams for JT-60 Super Advanced. The gap lengths in the acceleration stages were extended to reduce electric fields in a gap between the large grids and at the corner of the support flanges from the original 4-5 to 3-4 kV/mm. As a result, the voltage holding capability without beam acceleration has been successfully improved from 400 to 500 kV. The pulse duration to hold 500 kV reached 40 s of the power supply limitation.

Effects on focused ion beam irradiation on MOS transistors

International Nuclear Information System (INIS)

Campbell, A.N.; Peterson, K.A.; Fleetwood, D.M.; Soden, J.M.

1997-01-01

The effects of irradiation from a focused ion beam (FIB) system on MOS transistors are reported systematically for the first time. Three MOS transistor technologies, with 0.5, 1, and 3 μm minimum feature sizes and with gate oxide thicknesses ranging from 11 to 50 nm, were analyzed. Significant shifts in transistor parameters (such as threshold voltage, transconductance, and mobility) were observed following irradiation with a 30 keV Ga + focused ion beam with ion doses varying by over 5 orders of magnitude. The apparent damage mechanism (which involved the creation of interface traps, oxide trapped charge, or both) and extent of damage were different for each of the three technologies investigated

Ion-beam doping of amorphous silicon with germanium isovalent impurity

International Nuclear Information System (INIS)

Khokhlov, A.F.; Mashin, A.I.; Ershov, A.V.; Mashin, N.I.; Ignat'eva, E.A.

1988-01-01

Experimental data on ion-beam doping of amorphous silicon containing minor germanium additions by donor and acceptor impurity are presented. Doping of a-Si:Ge films as well as of a-Si layers was performed by implantation of 40 keV energy B + ions or 120 keV energy phosphorus by doses from 3.2x10 13 up to 1.3x10 17 cm -2 . Ion current density did not exceed 1 μA/cm 2 . Radiation defect annealing was performed at 400 deg C temperature during 30 min. Temperature dependences of conductivity in the region of 160-500 K were studied. It is shown that a-Si:Ge is like hydrogenized amorphous silicon in relation to doping

Portable test bench for the studies concerning ion sources and ion beam extraction and focusing systems; Banco de pruebas portatil para el estudio de fuentes de iones y de la extraccion y enfoque del haz de iones

Energy Technology Data Exchange (ETDEWEB)

Cordero Lopez, F

1961-07-01

A portable test bench is described, which was designed to check ion sources, ion beam extraction and focusing systems before its use in a 600 KeV Cockcroft-Walton accelerator. The vacuum possibilities of the system are specially analyzed in connection with its particular use. The whole can be considered as a portable accelerator of low energy (50 keV). (Author)

Performance of a modified DuoPIGatron ion source for PLT neutral beam injectors

International Nuclear Information System (INIS)

Tsai, C.C.; Stirling, W.L.; Haselton, H.H.

1978-09-01

The performance of a modified duoPIGatron ion source for PLT neutral beam injectors is described. The 22-cm source has been operated to deliver beams of 70 A, up to 45 keV, and 0.5 sec. Following a brief review of source operation, the dominant reactions leading to an enhanced atomic ion fraction in the source plasma are emphasized. In addition to the high atomic ion species yield (about 85%), other important characteristics of the source such as high arc efficiency (about 1.1 A ion beam current per kW of arc power), long filament lifetime, high reliability, and scalability are also described

A comparative study on low-energy ion beam and neutralized beam modifications of naked DNA and biological effect on mutation

Science.gov (United States)

Sarapirom, S.; Thongkumkoon, P.; Prakrajang, K.; Anuntalabhochai, S.; Yu, L. D.

2012-02-01

DNA conformation change or damage induced by low-energy ion irradiation has been of great interest owing to research developments in ion beam biotechnology and ion beam application in biomedicine. Mechanisms involved in the induction of DNA damage may account for effect from implanting ion charge. In order to check this effect, we used both ion beam and neutralized beam at keV energy to bombard naked DNA. Argon or nitrogen ion beam was generated and extracted from a radiofrequency (RF) ion source and neutralized by microwave-driven plasma in the beam path. Plasmid DNA pGFP samples were irradiated with the ion or neutralized beam in vacuum, followed by gel electrophoresis to observe changes in the DNA conformations. It was revealed that the ion charge played a certain role in inducing DNA conformation change. The subsequent DNA transfer into bacteria Escherichia coli ( E. coli) for mutation analysis indicated that the charged ion beam induced DNA change had high potential in mutation induction while neutralized beam did not. The intrinsic reason was attributed to additional DNA deformation and contortion caused by ion charge exchange effect so that the ion beam induced DNA damage could hardly be completely repaired, whereas the neutralized beam induced DNA change could be more easily recoverable owing to absence of the additional DNA deformation and contortion.

A comparative study on low-energy ion beam and neutralized beam modifications of naked DNA and biological effect on mutation

International Nuclear Information System (INIS)

Sarapirom, S.; Thongkumkoon, P.; Prakrajang, K.; Anuntalabhochai, S.; Yu, L.D.

2012-01-01

DNA conformation change or damage induced by low-energy ion irradiation has been of great interest owing to research developments in ion beam biotechnology and ion beam application in biomedicine. Mechanisms involved in the induction of DNA damage may account for effect from implanting ion charge. In order to check this effect, we used both ion beam and neutralized beam at keV energy to bombard naked DNA. Argon or nitrogen ion beam was generated and extracted from a radiofrequency (RF) ion source and neutralized by microwave-driven plasma in the beam path. Plasmid DNA pGFP samples were irradiated with the ion or neutralized beam in vacuum, followed by gel electrophoresis to observe changes in the DNA conformations. It was revealed that the ion charge played a certain role in inducing DNA conformation change. The subsequent DNA transfer into bacteria Escherichia coli (E. coli) for mutation analysis indicated that the charged ion beam induced DNA change had high potential in mutation induction while neutralized beam did not. The intrinsic reason was attributed to additional DNA deformation and contortion caused by ion charge exchange effect so that the ion beam induced DNA damage could hardly be completely repaired, whereas the neutralized beam induced DNA change could be more easily recoverable owing to absence of the additional DNA deformation and contortion.

Tuning the shape and damage in ion-beam induced ripples on silicon

Energy Technology Data Exchange (ETDEWEB)

Biermanns, Andreas; Pietsch, Ullrich [Universitaet Siegen, Festkoerperphysik, 57068 Siegen (Germany); Hanisch, Antje; Grenzer, Joerg [Helmholtz-Zentrum Dresden-Rossendorf, Institut fuer Ionenstrahlphysik und Materialforschung, P.O. Box 510119, 01314 Dresden (Germany); Metzger, Till Hartmut [ESRF, 6 rue Jules Horowitz, BP220, 38043 Grenoble Cedex (France)

2011-11-15

We investigate the influence of ion beam parameters on the ripple formation on Si(001) surfaces after bombardment with Xe{sup +} ions of 25 keV kinetic energy using a scanning ion beam system. By combining grazing incidence X-ray diffraction, small angle scattering and X-ray reflectivity, we show that during ion irradiation with 70 off-normal angle of incidence, changing the size of the irradiated area leads to an increased number of defects at the interface towards crystalline material. At 65 angle of incidence, the ripple amplitude grows. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Low-energy ion beam extraction and transport: Experiment--computer comparison

International Nuclear Information System (INIS)

Spaedtke, P.; Brown, I.; Fojas, P.

1994-01-01

Ion beam formation at low energy (∼1 keV or so) is more difficult to accomplish than at high energy because of beam blowup by space-charge forces in the uncompensated region within the extractor, an effect which is yet more pronounced for heavy ions and for high beam current density. For the same reasons, the extracted ion beam is more strongly subject to space charge blowup than higher energy beams if it is not space-charge neutralized to a high degree. A version of vacuum arc ion source with an extractor that produces low-energy metal ion beams at relatively high current (∼0.5--10 kV at up to ∼100 mA) using a multi-aperture, accel--decel extractor configuration has been created. The experimentally observed beam extraction characteristics of this source is compared with those predicted using the AXCEL-INP code, and the implied downstream beam transport with theoretical expectations. It is concluded that the low-energy extractor performance is in reasonable agreement with the code, and that good downstream space charge neutralization is obtained. Here, the code and the experimental results are described, and the features that contribute to good low-energy performance are discussed

Hardness enhancement and crosslinking mechanisms in polystyrene irradiated with high energy ion-beams

International Nuclear Information System (INIS)

Lee, E.H.; Rao, G.R.; Mansur, L.K.

1996-01-01

Surface hardness values several times larger than steel were produced using high energy ion beams at several hundred keV to MeV. High LET is important for crosslinking. Crosslinking is studied by analyzing hardness variations in response to irradiation parameter such as ion species, energy, and fluence. Effective crosslinking radii at hardness saturation are derived base on experimental data for 350 keV H + and 1 MeV Ar + irradiation of polystyrene. Saturation value for surface hardness is about 20 GPa

Monte Carlo modeling of ion beam induced secondary electrons

Energy Technology Data Exchange (ETDEWEB)

Huh, U., E-mail: uhuh@vols.utk.edu [Biochemistry & Cellular & Molecular Biology, University of Tennessee, Knoxville, TN 37996-0840 (United States); Cho, W. [Electrical and Computer Engineering, University of Tennessee, Knoxville, TN 37996-2100 (United States); Joy, D.C. [Biochemistry & Cellular & Molecular Biology, University of Tennessee, Knoxville, TN 37996-0840 (United States); Center for Nanophase Materials Science, Oak Ridge National Laboratory, Oak Ridge, TN 37831 (United States)

2016-09-15

Ion induced secondary electrons (iSE) can produce high-resolution images ranging from a few eV to 100 keV over a wide range of materials. The interpretation of such images requires knowledge of the secondary electron yields (iSE δ) for each of the elements and materials present and as a function of the incident beam energy. Experimental data for helium ions are currently limited to 40 elements and six compounds while other ions are not well represented. To overcome this limitation, we propose a simple procedure based on the comprehensive work of Berger et al. Here we show that between the energy range of 10–100 keV the Berger et al. data for elements and compounds can be accurately represented by a single universal curve. The agreement between the limited experimental data that is available and the predictive model is good, and has been found to provide reliable yield data for a wide range of elements and compounds. - Highlights: • The Universal ASTAR Yield Curve was derived from data recently published by NIST. • IONiSE incorporated with the Curve will predict iSE yield for elements and compounds. • This approach can also handle other ion beams by changing basic scattering profile.

Development of an ion source for long-pulse (30-s) neutral beam injection

International Nuclear Information System (INIS)

Menon, M.M.; Barber, G.C.; Blue, C.W.

1982-01-01

This paper describes the development of a long-pulse positive ion source that has been designed to provide high brightness deuterium beams (divergence approx. = 0.25 0 rms, current density approx. = 0.15 A cm -2 ) of 40 to 45 A, at a beam energy of 80 keV, for pulse lengths up to 30 s. The design and construction of the ion source components are described with particular emphasis placed on the long-pulse cathode assembly and ion accelerator

Negative-ion-beam generation with the ORNL SITEX source

International Nuclear Information System (INIS)

Dagenhart, W.K.; Stirling, W.L.; Kim, J.

1982-05-01

Parametric studies were made on a hot cathode reflex discharge H - Surface Ionization source with Transverse Extraction (SITEX) in both the pure hydrogen and the mixed hydrogen-cesium mode. Extraction current density, beam current, gas efficiency, extracted electron-to-H - current ratio, heavy negative ion impurities, optics, and long pulse operation were investigated as a function of time, arc voltage, arc current, converter voltage, H 2 gas flow, cesium feed rate, and plasma generator geometries. Initial results of the research were an extracted H - beam current density of 56 mA/cm 2 at 23 mA for 5 s pulses and, gas efficiency of 3%, theta/sub perpendicular/ (1/e) approx. 2 +- 1 0 , theta/sub parallel/ (1/e) approx. 1 +- 1 0 , at a beam energy of 25 keV. Negative heavy ion beam impurities were reduced to - ions are produced prinicpally by positive ion surface conversion using elemental cesium fractional monolayer coverage on a molybdenum converter substrate, which is biased negatively with respect to the anode

Radiation blistering of Nb implanted sequentially with helium ions of different energies (3-500 keV)

International Nuclear Information System (INIS)

Guseva, M.I.; Gusev, V.; Krasulin, U.L.; Martinenko, U.V.; Das, S.K.; Kaminsky, M.S.

1976-01-01

Cold rolled, polycrystalline niobium samples were irradiated at room temperature with 4 He + ions sequentially at 14 different energies over an energy range from 3 keV--500 keV in steps of 50 keV. The dose for each energy was chosen to give an approximately uniform concentration of helium between the implant depths corresponding to 3 keV and 500 keV. In one set of experiments the irradiations were started at the Kurchatov Institute with 3 keV 4 He + ions and extended up to 80 keV in several steps. Subsequently, the same target area was irradiated with 4 He + ions at Argonne National Laboratory (ANL) starting at 100 keV and increased to 500 keV in steps of 50 keV. Another set of irradiations were started at ANL with 500 keV 4 He + ions and continued with decreasing ion energies to 100 keV. Subsequently, the same area was irradiated at the Kurchatov Institute starting at 80 keV and continued with decreasing ion energies to 3 keV. Both sets of irradiations were completed for two different total doses, 0.5 C cm -2 and 1.0 C cm -2

Development and characterization of semiconductor ion detectors for plasma diagnostics in the range over 0.3 keV

Science.gov (United States)

Cho, T.; Sakamoto, Y.; Hirata, M.; Kohagura, J.; Makino, K.; Kanke, S.; Takahashi, K.; Okamura, T.; Nakashima, Y.; Yatsu, K.; Tamano, T.; Miyoshi, S.

1997-01-01

For the purpose of plasma-ion-energy analyses in a wide-energy range from a few hundred eV to hundreds of keV, upgraded semiconductor detectors are newly fabricated and characterized using a test-ion-beam line from 0.3 to 12 keV. In particular, the detectable lowest-ion energy is drastically improved at least down to 0.3 keV; this energy is one to two orders-of-magnitude better than those for commercially available Si-surface-barrier diodes employed for previous plasma-ion diagnostics. A signal-to-noise ratio of two to three orders-of-magnitude better than that for usual metal-collector detectors is demonstrated for the compact-sized semiconductor along with the availability of the use under conditions of a good vacuum and a strong-magnetic field. Such characteristics are achieved due to the improving methods of the optimization of the thicknesses of a Si dead layer and a SiO2 layer, as well as the nitrogen-doping technique near the depletion layer along with minimizing impurity concentrations in Si. Such an upgraded capability of an extremely low-energy-ion detection with the low-noise characteristics enlarges research regimes of plasma-ion behavior using semiconductor detectors not only in the divertor regions of tokamaks but in wider spectra of open-field plasma devices including tandem mirrors. An application of the semiconductor ion detector for plasma-ion diagnostics is demonstrated in a specially designed ion-spectrometer structure.

Magnetic fusion with high energy self-colliding ion beams

International Nuclear Information System (INIS)

Restoker, N.; Wessel, F.; Maglich, B.; Fisher, A.

1993-01-01

Field-reversed configurations of energetic large orbit ions with neutralizing electrons have been proposed as the basis of a fusion reactor. Vlasov equilibria consisting of a ring or an annulus have been investigated. A stability analysis has been carried out for a long thin layer of energetic ions in a low density background plasma. There is a growing body of experimental evidence from tokamaks that energetic ions slow down and diffuse in accordance with classical theory in the presence of large non-thermal fluctuations and anomalous transport of low energy (10 keV) ions. Provided that major instabilities are under control, it seems likely that the design of a reactor featuring energetic self-colliding ion beams can be based on classical theory. In this case a confinement system that is much better than a tokamak is possible. Several methods are described for creating field reversed configurations with intense neutralized ion beams

Magnetic fusion with high energy self-colliding ion beams

International Nuclear Information System (INIS)

Rostoker, N.; Wessel, F.; Maglich, B.; Fisher, A.

1992-06-01

Field-reversed configurations of energetic large orbit ions with neutralizing electrons have been proposed as the basis of a fusion reactor. Vlasov equilibria consisting of a ring or an annulus have been investigated. A stability analysis has been carried out for a long thin layer of energetic ions in a low density background plasma. There is a growing body of experimental evidence from tokamaks that energetic ions slow down and diffuse in accordance with classical theory in the presence of large non-thermal fluctuations and anomalous transport of low energy (10 keV) ions. Provided that major instabilities are under control, it seems likely that the design of a reactor featuring energetic self-colliding ion beams can be based on classical theory. In this case a confinement system that is much better than a tokamak is possible. Several methods are described for creating field reversed configurations with intense neutralized ion beams

Ion-beam induced structure modifications in amorphous germanium

International Nuclear Information System (INIS)

Steinbach, Tobias

2012-01-01

Object of the present thesis was the systematic study of ion-beam induced structure modifications in amorphous germanium (a-Ge) layers due to low- (LEI) and high-energetic (SHI) ion irradiation. The LEI irradiation of crystalline Ge (c-Ge) effects because the dominating nuclear scattering of the ions on the solid-state atoms the formation of a homogeneous a-Ge Layer. Directly on the surface for fluences of two orders of magnitude above the amorphization fluence the formation of stable cavities independently on the irradiation conditions was observed. For the first time for the ion-beam induced cavity formation respectively for the steady expansion of the porous layer forming with growing fluence a linear dependence on the energy ε n deposed in nuclear processes was detected. Furthermore the formation of buried cavities was observed, which shows a dependence on the type of ions. While in the c-Ge samples in the range of the high electronic energy deposition no radiation defects, cavities, or plastic deformations were observed, the high electronic energy transfer in the 3.1 μm thick pre-amorphized a-Ge surface layers leads to the formation of randomly distributed cavities. Basing on the linear connection between cavity-induced vertical volume expansion and the fluence determined for different energy transfers for the first time a material-specific threshold value of ε e HRF =(10.5±1.0) kev nm -1 was determined, above which the ion-beam induced cavity formation in a-Ge sets on. The anisotropic plastic deformation of th a-Ge layer superposed at inclined SHI irradiation on the cavity formation was very well described by an equation derived from the viscoelastic Maxwell model, but modified under regardment of the experimental results. The positive deformation yields determined thereby exhibit above a threshold value for the ion-beam induced plastic deformation ε e S a =(12±2) keV nm -1 for the first time extracted for a Ge the characteristic linear behaviour of the

Characterisation Of The Beam Plasma In High Current, Low Energy Ion Beams For Implanters

International Nuclear Information System (INIS)

Fiala, J.; Armour, D. G.; Berg, J. A. van der; Holmes, A. J. T.; Goldberg, R. D.; Collart, E. H. J.

2006-01-01

The effective transport of high current, positive ion beams at low energies in ion implanters requires the a high level of space charge compensation. The self-induced or forced introduction of electrons is known to result in the creation of a so-called beam plasma through which the beam propagates. Despite the ability of beams at energies above about 3-5 keV to create their own neutralising plasmas and the development of highly effective, plasma based neutralising systems for low energy beams, very little is known about the nature of beam plasmas and how their characteristics and capabilities depend on beam current, beam energy and beamline pressure. These issues have been addressed in a detailed scanning Langmuir probe study of the plasmas created in beams passing through the post-analysis section of a commercial, high current ion implanter. Combined with Faraday cup measurements of the rate of loss of beam current in the same region due to charge exchange and scattering collisions, the probe data have provided a valuable insight into the nature of the slow ion and electron production and loss processes. Two distinct electron energy distribution functions are observed with electron temperatures ≥ 25 V and around 1 eV. The fast electrons observed must be produced in their energetic state. By studying the properties of the beam plasma as a function of the beam and beamline parameters, information on the ways in which the plasma and the beam interact to reduce beam blow-up and retain a stable plasma has been obtained

Simulations and experiments of intense ion beam compression in space and time

International Nuclear Information System (INIS)

Yu, S.S.; Seidl, P.A.; Roy, P.K.; Lidia, S.M.; Coleman, J.E.; Kaganovich, I.D.; Gilson, E.P.; Welch, Dale Robert; Sefkow, Adam B.; Davidson, R.C.

2008-01-01

The Heavy Ion Fusion Science Virtual National Laboratory has achieved 60-fold longitudinal pulse compression of ion beams on the Neutralized Drift Compression Experiment (NDCX) (P. K. Roy et al., Phys. Rev. Lett. 95, 234801 (2005)). To focus a space-charge-dominated charge bunch to sufficiently high intensities for ion-beam-heated warm dense matter and inertial fusion energy studies, simultaneous transverse and longitudinal compression to a coincident focal plane is required. Optimizing the compression under the appropriate constraints can deliver higher intensity per unit length of accelerator to the target, thereby facilitating the creation of more compact and cost-effective ion beam drivers. The experiments utilized a drift region filled with high-density plasma in order to neutralize the space charge and current of an ∼300 keV K + beam and have separately achieved transverse and longitudinal focusing to a radius Z 2 MeV) ion beam user-facility for warm dense matter and inertial fusion energy-relevant target physics experiments.

The broad beam ion implanter with the use of radio frequency source

Energy Technology Data Exchange (ETDEWEB)

Abdelaziz, M E; Zakhary, S G; Ghanem, A A [Accelerators Dept., Nuclear Research Center, Atomic Energy Authority, Cairo (Egypt)

1997-12-31

The project started with the design of the broad beam RF ion source and the single gap accelerating column. The preliminary results of the source show that the ion current extracted from the source could reach 30 m A with extraction voltage = 2 kV. The beam uniformity was made by the use of multi apertures graphite cathode designed to make perveance matching to the normal Gaussian distribution of the ion beam. The beam uniformity could reach 66% of the beam width of 6 cm. The design of the single gap accelerating column based on tracing of beam lines inside the accelerating gap and estimation of the minimum value of the electric field required to contain the beam against space charge expansion in order to achieve minimum beam emittance without aberrations. The preliminary results of the acceleration of the ion beams up to 20 KeV show an increase of the extracted ion current with increase of the extraction voltage. This increase is due to decrease of the angular divergence of the beam due to the effect of increasing the axial velocity component of the accelerated field. 9 figs.

REXEBIS the Electron Beam Ion Source for the REX-ISOLDE project

CERN Document Server

Wenander, F; Liljeby, L; Nyman, G H

1998-01-01

The REXEBIS is an Electron Beam Ion Source (EBIS) developed especially to trap and further ionise the sometimes rare and short-lived isotopes that are produced in the ISOLDE separator for the Radioactive beam EXperiment at ISOLDE (REX-ISOLDE). By promoting the single-charged ions to a high charge-state the ions are more efficiently accelerated in the following linear accelerator. The EBIS uses an electron gun capable of producing a 0.5 A electron beam. The electron gun is immersed in a magnetic field of 0.2 T, and the electron beam is compressed to a current density of >200 A/cm2 inside a 2 T superconducting solenoid. The EBIS is situated on a high voltage (HV) platform with an initial electric potential of 60 kV allowing cooled and bunched 60 keV ions extracted from a Penning trap to be captured. After a period of confinement in the electron beam (<20 ms), the single-charged ions have been ionised to a charge-to-mass ratio of approximately ¼. During this confinement period, the platform potential is decr...

Very broad beam metal ion source for large area ion implantation application

International Nuclear Information System (INIS)

Brown, I.; Anders, S.; Dickinson, M.R.; MacGill, R.A.; Yao, X.

1993-01-01

The authors have made and operated a very broad beam version of vacuum arc ion source and used it to carry out high energy metal ion implantation of a particularly large substrate. A multiple-cathode vacuum arc plasma source was coupled to a 50 cm diameter beam extractor (multiple aperture, accel-decel configuration) operated at a net extraction voltage of up to 50 kV. The metal ion species chosen were Ni and Ta. The mean ion charge state for Ni and Ta vacuum arc plasmas is 1.8 and 2.9, respectively, and so the mean ion energies were up to about 90 and 145 keV, respectively. The ion source was operated in a repetitively pulsed mode with pulse length 250 μs and repetition rate several pulses per second. The extracted beam had a gaussian profile with FWHM about 35 cm, giving a nominal beam area of about 1,000 cm 2 . The current of Ni or Ta metal ions in the beam was up to several amperes. The targets for the ion implantation were a number of 24-inch long, highly polished Cu rails from an electromagnetic rail gun. The rails were located about 80 cm away from the ion source extractor grids, and were moved across a diameter of the vessel in such a way as to maximize the uniformity of the implant along the rail. The saturation retained dose for Ta was limited to about 4 x 10 16 cm -2 because of the rather severe sputtering, in accordance with the theoretical expectations for these implantation conditions. Here they describe the ion source, the implantation procedure, and the kinds of implants that can be produced in this way

Preliminary research results for generation and application of high power ion beams on FLASh II accelerator

International Nuclear Information System (INIS)

Yang Hailiang; Qiu Aici; Zhang Jiasheng; He Xiaoping; Sun Jianfeng; Peng Jianchang; Tang Junping; Ren Shuqing; Ouyang Xiaoping; Zhang Guoguang; Huang Jianjun; Yang Li; Wang Haiyang; Li Jingya; Li Hongyu

2004-01-01

Preliminary results for the generation and application of the high power ion beam (HPIB) on the FLASH II accelerator are reported. The structure and principle of the pinch reflex ion beam diode are introduced. The equation of parapotential flow is corrected for the reduction of diode A-K gap due to the motion of cathode and anode plasma. The HPIB peak current of ∼160 kA is obtained with a peak energy of ∼500 keV. Experimental investigations of generating 6-7 MeV quasi-monoenergetic pulsed γ-rays with high power ion (proton) beams striking 19 F target are presented. In addition, the results of the thermal-mechanical effects on the material irradiated with HPIB, which are applied to the simulation of 1 keV black body radiation x-rays, are also discussed

Experimental study of interactions of highly charged ions with atoms at keV energies: Progress report, February 16, 1987-January 15, 1988

International Nuclear Information System (INIS)

Kostroun, V.O.

1988-01-01

This report describes the progress made during the past year towards the understanding of the behavior of electron beam ion sources and using the sources constructed in this laboratory to investigate interactions of highly charged ions with atoms at keV energies. The operational status of the two sources in use, CEBIS I and CEBIS II is described. At present, the sources are producing beams of bare, hydrogen and helium like ions of C, N, and O, and argon ions up to Ar 13+ with peak current pulses in the electric nanoampere range. Some of the problems encountered in the development of the sources and their resolution are discussed, and a brief description of experimental apparatus and ion beam transport line is presented. Experiments in progress are described

Space Charge Compensation in the Linac4 Low Energy Beam Transport Line with Negative Hydrogen Ions

CERN Document Server

Valerio-Lizarraga, C; Leon-Monzon, I; Lettry, J; Midttun, O; Scrivens, R

2014-01-01

The space charge effect of low energy, unbunched ion beams can be compensated by the trapping of ions or electrons into the beam potential. This has been studied for the 45 keV negative hydrogen ion beam in the CERN Linac4 Low Energy Beam Tranport (LEBT) using the package IBSimu1, which allows the space charge calculation of the particle trajectories. The results of the beam simulations will be compared to emittance measurements of an H- beam at the CERN Linac4 3 MeV test stand, where the injection of hydrogen gas directly into the beam transport region has been used to modify the space charge compensation degree.

Ion-beam doping of GaAs with low-energy (100 eV) C + using combined ion-beam and molecular-beam epitaxy

Science.gov (United States)

Iida, Tsutomu; Makita, Yunosuke; Kimura, Shinji; Winter, Stefan; Yamada, Akimasa; Fons, Paul; Uekusa, Shin-ichiro

1995-01-01

A combined ion-beam and molecular-beam-epitaxy (CIBMBE) system has been developed. This system consists of an ion implanter capable of producing ions in the energy range of 30 eV-30 keV and conventional solid-source MBE. As a successful application of CIBMBE, low-energy (100 eV) carbon ion (C+) irradiation during MBE growth of GaAs was carried out at substrate temperatures Tg between 500 and 590 °C. C+-doped layers were characterized by low-temperature (2 K) photoluminescence (PL), Raman scattering, and van der Pauw measurements. PL spectra of undoped GaAs grown by CIBMBE revealed that unintentional impurity incorporation into the epilayer is extremely small and precise doping effects are observable. CAs acceptor-related emissions such as ``g,'' [g-g], and [g-g]β are observed and their spectra are significantly changed with increasing C+ beam current density Ic. PL measurements showed that C atoms were efficiently incorporated during MBE growth by CIBMBE and were optically well activated as an acceptor in the as-grown condition even for Tg as low as 500 °C. Raman measurement showed negligible lattice damage of the epilayer bombarded with 100 eV C+ with no subsequent heat treatment. These results indicate that contamination- and damage-free impurity doping without postgrowth annealing can be achieved by the CIBMBE method.

Ion-beam doping of GaAs with low-energy (100 eV) C(+) using combined ion-beam and molecular-beam epitaxy

Science.gov (United States)

Lida, Tsutomu; Makita, Yunosuke; Kimura, Shinji; Winter, Stefan; Yamada, Akimasa; Fons, Paul; Uekusa, Shin-Ichiro

1995-01-01

A combined ion-beam and molecular-beam-epitaxy (CIBMBE) system has been developed. This system consists of an ion implanter capable of producing ions in the energy range of 30 eV - 30 keV and conventional solid-source MBE. As a successful application of CIBMBE, low-energy (100 eV) carbon ion (C(+)) irradiation during MBE growth of GaAs was carried out at substrate temperatures T(sub g) between 500 and 590 C. C(+)-doped layers were characterized by low-temperature (2 K) photoluminescence (PL), Raman scattering, and van der Pauw measurements. PL spectra of undoped GaAs grown by CIBMBE revealed that unintentional impurity incorporation into the epilayer is extremely small and precise doping effects are observable. C(sub As) acceptor-related emissions such as 'g', (g-g), and (g-g)(sub beta) are observed and their spectra are significantly changed with increasing C(+) beam current density I(sub c). PL measurements showed that C atoms were efficiently incorporated during MBE growth by CIBMBE and were optically well activated as an acceptor in the as-grown condition even for T(sub g) as low as 500 C. Raman measurement showed negligible lattice damage of the epilayer bombarded with 100 eV C(+) with no subsequent heat treatment. These results indicate that contamination- and damage-free impurity doping without postgrowth annealing can be achieved by the CIBMBE method.

Overview of the LBL/LLNL negative-ion-based neutral beam program

International Nuclear Information System (INIS)

Pyle, R.V.

1980-01-01

The LBL/LLNL negative-ion-based neutral beam development program and status are described. The emphasis has shifted in some details since the first symposium in 1977, but our overall objectives remain the same, namely, the development of megawatt d.c. injection systems. Previous emphasis was on a system in which the negative ions were produced by double charge exchange in sodium vapor. At present, the emphasis is on a self-extraction source in which the negative ions are produced on a biased surface imbedded in a plasma. A one-ampere beam will be accelerated to at least 40 keV next year. Studies of negative-ion formation and interactions help provide a data base for the technology program

Energetic ion beam in the earth's magnetotail lobe

International Nuclear Information System (INIS)

Lui, A.T.Y.; Krimigis, S.M.

1983-01-01

Occurrence of a prominent peak in the ion energy spectrum at energies of 0.1 to 0.7 MeV is observed by the IMP-8 spacecraft during an energetic particle burst in a plasma ''dropout'' interval at about 37 R/sub e/ in the earth's magnetotail. This unusual characteristic in the spectrum is detected for about 2 minutes. By fitting the observed ion spectra to a drifting Kappa distribution, it is found that the ion population can be described as a hot beam with number densities 4 x 10 -7 to 5 x 10 -4 cm -3 and temperatures 15 to 45 keV, jetting tailward at speeds of 3500 to 7000 km/s. The energy flux density associated with the beam can be as high as 8 x 10 -2 ergs cm -2 sec -1

Origin of Si(LMM) Auger Electron Emission from Silicon and Si-Alloys by keV Ar+ Ion Bombardment

Science.gov (United States)

Iwami, Motohiro; Kim, Su Chol; Kataoka, Yoshihide; Imura, Takeshi; Hiraki, Akio; Fujimoto, Fuminori

1980-09-01

Si(LMM) Auger electrons emitted from specimens of pure silicon and several Si-alloys (Ni-Si, Pd-Si and Cu-Si) under keV Ar+ ion bombardment, were examined. In the Auger spectra from all specimens studied there were four peaks at energies of 92, 86, 76 and 66 eV. The Auger signal intensity varied considerably with both the incident angle and the energy of the primary ion beam. It is proposed that the Auger electrons are emitted from silicon atoms (or ions) just beneath the specimen surface but free from the bulk network.

Fundamental aspects of laser and ion-beam interactions with solid surfaces

International Nuclear Information System (INIS)

Wang, Z.L.

1982-01-01

In the first part of the thesis laser-beam interactions with solid surfaces are discussed. In the second part ion-beam interactions with solid surfaces are discussed and mainly the mixing of atoms due to ion bombardment. A study of ion-beam mixing of Cu-Au and Cu-W systems is described in order to illustrate the mechanism for ion beam mixing. As Cu-Au are miscible whereas Cu-W systems are not, and both systems have comparable mass numbers, comparison provides a test for current theories on ion-beam mixing. The results of experiments where 300 keV Kr 4+ ion-bombardment at a dose of 5x10 15 cm -2 has been applied to initiate mixing of a single layer structure and sandwich samples for both systems are described. Room temperature irradiations with a dose of 5x10 15 cm -2 show that Cu-Au mix readily, whereas a small mixing effect is observed for Cu-W systems. A comparable amount of mixing for Cu-Au induced by laser or ion beams is found whereas no mixing of Cu-W induced by laser irradiation is observed, which is in agreement with the criteria for formation of metastable solid solutions due to pulsed laser treatment. (Auth.)

Lifetime measurements in an electrostatic ion beam trap using image charge monitoring

International Nuclear Information System (INIS)

Rahinov, Igor; Toker, Yoni; Heber, Oded; Rappaport, Michael; Zajfman, Daniel; Strasser, Daniel; Schwalm, Dirk

2012-01-01

A technique for mass-selective lifetime measurements of keV ions in a linear electrostatic ion beam trap is presented. The technique is based on bunching the ions using a weak RF potential and non-destructive ion detection by a pick-up electrode. This method has no mass-limitation, possesses the advantage of inherent mass-selectivity, and offers a possibility of measuring simultaneously the lifetimes of different ion species with no need for prior mass-selection.

Extraction of pulsed ion beams from an anode covered with liquid material

International Nuclear Information System (INIS)

Kitamura, Akira; Yano, Syukuro

1982-01-01

In order to extend the life of anodes of pulsed ion diodes, a trial was made to extract ions from a plasma created by surface flashover on the oil-covered anode. The diode with this anode worked well as a so-called pinched electron beam diode. Production of proton beams of 10 kA with energies of about 400 keV was confirmed by measurements with biased ion collectors and those of prompt γ-rays from the reaction 19 F(p,γα) 16 O. Substantial reduction of damage and substantial extension of the life of the anode disc were realized. (author)

CW/Pulsed H- ion beam generation with PKU Cs-free 2.45 GHz microwave driven ion source

Science.gov (United States)

Peng, S. X.; Ren, H. T.; Xu, Y.; Zhang, T.; Zhang, A. L.; Zhang, J. F.; Zhao, J.; Guo, Z. Y.; Chen, J. E.

2015-04-01

Circular accelerators used for positron emission tomography (PET, i.e. accelerator used for make radio isotopes) need several mA of CW H- ion beam for their routine operation. Other facilities, like Space Radio-Environment Simulate Assembly (SPRESA), require less than 10 mA pulsed mode H- beam. Caesium free negative hydrogen ion source is a good choice for those facilities because of its compact structure, easy operation and low cost. Up to now, there is no H- source able to produce very intense H- beams with important variation of the duty factor[1]. Recently, a new version of 2.45 GHz microwave H- ion source was designed at PKU, based on lessons learnt from the previous one. This non cesiated source is very compact thanks to its permanent magnet configuration. Special attention was paid on the design of the discharge chamber structure, electron dumping and extraction system. Source test to produce H- ion beams in pulsed and CW mode was carried out on PKU ion source test bench. In CW mode, a 10.8 mA/30keV H- beam with rms emittance about 0.16 π.mm.mrad has been obtained with only 500 W rf power. The power efficiency reaches 21 mA/kW. In pulsed mode with duty factor of 10% (100Hz/1ms), this compact source can easily deliver 20 mA H- ion beam at 35 keV with rms emittance about 0.2 π.mm.mrad when RF power is set at 2.2 kW (peak power). Several hour successive running operation in both modes and totaling more than 200 hours proves its high quality. The outside dimension of this new H- source body is ϕ116 mm × 124 mm, and the entire H- source infrastructure, including rf matching section, plasma chamber and extraction system, is ϕ310 × 180 mm. The high voltage region is limited with in a ϕ310 mm × 230 mm diagram. Details are given in this paper.

Ripple structures on surfaces and underlying crystalline layers in ion beam irradiated Si wafers

Energy Technology Data Exchange (ETDEWEB)

Grenzer, J.; Muecklich, A. [Forschungszentrum Rossendorf, Institut fuer Ionenstrahlphysik und Materialforschung, Dresden (Germany); Biermanns, A.; Grigorian, S.A.; Pietsch, U. [Institute of Physics, University of Siegen (Germany)

2009-08-15

We report on the formation of ion beam induced ripples in Si(001) wafers when bombarded with Ar+ ions at an energy of 60 keV. A set of samples varying incidence and azimuthal angles of the ion beam with respect to the crystalline surface orientation was studied by two complementary near surface sensitive techniques, namely atomic force microscopy and depth-resolved X-ray grazing incidence diffraction (GID). Additionally, cross-section TEM investigations were carried out. The ripple-like structures are formed at the sample surface as well as at the buried amorphous-crystalline interface. Best quality of the ripple pattern was found when the irradiating ion beam was aligned parallel to the (111) planes. The quality decreases rapidly if the direction of the ion beam deviates from (111). (Abstract Copyright [2009], Wiley Periodicals, Inc.)

The kick-out mass selection technique for ions stored in an Electrostatic Ion Beam Trap

International Nuclear Information System (INIS)

Toker, Y; Altstein, N; Aviv, O; Rappaport, M L; Heber, O; Schwalm, D; Strasser, D; Zajfman, D

2009-01-01

A simple mass selection technique which allows one to clean a keV ion beam of undesirable masses while stored in an Electrostatic Ion Beam Trap (EIBT) is described. The technique is based on the time-of-flight principle and takes advantage of the long storage times and self-bunching that are possible in this type of traps (self bunching being the effect that keeps ions of the same mass bunched in spite of their finite distributions of velocities and trajectories). As the oscillation period is proportional to the square root of the ion mass, bunches containing ions of different masses will separate in space with increasing storage time and can be kicked out by a pulsed deflector mounted inside the trap. A mass selector of this type has been implemented successfully in an EIBT connected to an Even-Lavie supersonic expansion source and is routinely used in ongoing cluster experiments.

Low-energy ion beam bombardment effect on the plant-cell-envelope mimetic membrane for DNA transfer

International Nuclear Information System (INIS)

Prakrajang, K.; Sangwijit, K.; Anuntalabhochai, S.; Wanichapichart, P.; Yu, L.D.

2012-01-01

This study is a systematic analysis of the mechanisms involved in ion-beam induced DNA transfer, an important application of ion beam biotechnology. Cellulose membranes were used to mimic the plant cell envelope. Ion beams of argon (Ar) or nitrogen (N) at an energy of 25 keV bombarded the cellulose membranes at fluences ranging from 10 15 to 10 16 ions/cm 2 . The damage to the ion-beam-bombarded membranes was characterized using infrared spectroscopy, a micro tensile test and scanning electron microscopy (SEM). Chain scission was the dominant radiation damage type in the membrane. DNA diffusion across the membrane was significantly increased after ion beam bombardment. The increase in DNA transfer is therefore attributed to chain scission, which increases the permeability by increasing the number of pores in the membrane.

Status report on the development of a tubular electron beam ion source

International Nuclear Information System (INIS)

Donets, E.D.; Donets, E.E.; Becker, R.; Liljeby, L.; Rensfelt, K.-G.; Beebe, E.N.; Pikin, A.I.

2004-01-01

The theoretical estimations and numerical simulations of tubular electron beams in both beam and reflex mode of source operation as well as the off-axis ion extraction from a tubular electron beam ion source (TEBIS) are presented. Numerical simulations have been done with the use of the IGUN and OPERA-3D codes. Numerical simulations with IGUN code show that the effective electron current can reach more than 100 A with a beam current density of about 300-400 A/cm 2 and the electron energy in the region of several KeV with a corresponding increase of the ion output. Off-axis ion extraction from the TEBIS, being the nonaxially symmetric problem, was simulated with OPERA-3D (SCALA) code. The conceptual design and main parameters of new tubular sources which are under consideration at JINR, MSL, and BNL are based on these simulations

Induction of surface modification of polytetrafluoroethylene with proton ion beams

Energy Technology Data Exchange (ETDEWEB)

Noh, I S; Kim, H R; Choi, Y J; Park, H S [Seoul National Univ. of Technology, Seoul (Korea, Republic of)

2007-04-15

Cardiovascular disease is one of the leading causes of the death in the USA and developed countries. More than 570,000 artery bypass graft surgeries per USA are performed each year, though percutaneous devices have abounded in extreme cases. Based on the surgery follow-ups, large diameter expanded polytetrafluoroethylene (ePTFE) (>5 mm) are clinically employed with good results but its clinical applications in smaller vessels is still problematic due to thrombosis and neointima formation. Achievement of high patency grafts has been to some extent achieved by numerous methods of surface modification techniques, but its results are less than its initial hopes. As examples, endothelial cells coated on the luminal surface of ePTFE has demonstrated limited success after recirculation. Surface modifications of PTFE film with either argon ion beam or UV light from Xe-excimer lamp were reported to increase its interaction with vascular endothelial cell. Surface modification of poly(lactide-co-glycolide)[PLGA] is also very important in tissue engineering, in where induction of its initial high cellular adhesion and spreading is a critical step for development of tissue engineering medical products. We previously reported tissue engineering of the hybrid ePTFE scaffold by seeding smooth muscle cells and subsequently evaluation of its tissue regeneration behaviors and stabilities with circulation of pulsatile flow. To improve its tissue engineering more quickly, we here performed surface modification of ePTFE and porous PLGA scaffold and evaluated its subsequent chemical and biological properties after treating its surface with low energy ion beams. The porous ePTFE was prepared in a round shape (diameter = 1 cm) and dried after organic solvent extraction for ion beam treatment. Another porous PLGA layers (d = 1 cm, t = 1 cm with approximately 92% porosity) were fabricated and treated its surface by irradiating low energy either nitrogen or argon ion beams (1 keV, 1x1015 ions

Induction of surface modification of polytetrafluoroethylene with proton ion beams

International Nuclear Information System (INIS)

Noh, I. S.; Kim, H. R.; Choi, Y. J.; Park, H. S.

2007-04-01

Cardiovascular disease is one of the leading causes of the death in the USA and developed countries. More than 570,000 artery bypass graft surgeries per USA are performed each year, though percutaneous devices have abounded in extreme cases. Based on the surgery follow-ups, large diameter expanded polytetrafluoroethylene (ePTFE) (>5 mm) are clinically employed with good results but its clinical applications in smaller vessels is still problematic due to thrombosis and neointima formation. Achievement of high patency grafts has been to some extent achieved by numerous methods of surface modification techniques, but its results are less than its initial hopes. As examples, endothelial cells coated on the luminal surface of ePTFE has demonstrated limited success after recirculation. Surface modifications of PTFE film with either argon ion beam or UV light from Xe-excimer lamp were reported to increase its interaction with vascular endothelial cell. Surface modification of poly(lactide-co-glycolide)[PLGA] is also very important in tissue engineering, in where induction of its initial high cellular adhesion and spreading is a critical step for development of tissue engineering medical products. We previously reported tissue engineering of the hybrid ePTFE scaffold by seeding smooth muscle cells and subsequently evaluation of its tissue regeneration behaviors and stabilities with circulation of pulsatile flow. To improve its tissue engineering more quickly, we here performed surface modification of ePTFE and porous PLGA scaffold and evaluated its subsequent chemical and biological properties after treating its surface with low energy ion beams. The porous ePTFE was prepared in a round shape (diameter = 1 cm) and dried after organic solvent extraction for ion beam treatment. Another porous PLGA layers (d = 1 cm, t = 1 cm with approximately 92% porosity) were fabricated and treated its surface by irradiating low energy either nitrogen or argon ion beams (1 keV, 1x1015 ions

Ion Beam Etching: Replication of Micro Nano-structured 3D Stencil Masks

International Nuclear Information System (INIS)

Weber, Patrick; Guibert, Edouard; Mikhailov, Serguei; Bruegger, Juergen; Villanueva, Guillermo

2009-01-01

Ion beam LIGA allows the etching of 3D nano-structures by direct writing with a nano-sized beam. However, this is a relatively time consuming process. We propose here another approach for etching structures on large surfaces and faster, compared to the direct writing process. This approach consists of replicating 3D structured masks, by scanning an unfocused ion beam. A polymer substrate is placed behind the mask, as in UV photolithography. But the main advantage is that the 3D structure of the mask can be replicated into the polymer. For that purpose, the masks (developped at LMIS1, EPFL) are made of a silicon nitride membrane 100 nm thick, on which 3D gold structures up to 200 nm thick, are deposited. The 3D Au structures are made with the nanostencil method, based on successive gold deposition. The IMA institute, from HE-Arc, owns a High Voltage Engineering 1.7 MV Tandetron with both solid and gaseous negative ion sources, able to generate ions from almost every chemical element in a broad range of energies comprised between 400 keV and 6.8 MeV. The beam composition and energy are chosen in such a way, that ions lose a significant fraction of their energy when passing through the thickest regions of the mask. Ions passing through thinner regions of the mask loose a smaller fraction of their energy and etch the polymer with larger thicknesses, allowing a replication of the mask into the polymer. For our trials, we have used a carbon beam with an energy of 500 keV. The beam was focussed to a diameter of 5 mm with solid slits, in order to avoid border effects and thus ensure a homogeneous dose distribution on the beam diameter. The feasibility of this technique has been demonstrated, allowing industrial applications for micro-mould fabrication, micro-fluidics and micro-optics.

Modification of solid surface by intense pulsed light-ion and metal-ion beams

Science.gov (United States)

Nakagawa, Y.; Ariyoshi, T.; Hanjo, H.; Tsutsumi, S.; Fujii, Y.; Itami, M.; Okamoto, A.; Ogawa, S.; Hamada, T.; Fukumaru, F.

1989-03-01

Metal surfaces of Al, stainless-steel and Ti were bombarded with focused intense pulsed proton and carbon ion beams (energy ˜ 80 keV, current density ≲ 1000 A/cm 2, pulse width ˜ 300 ns). Thin titanium carbide layers were produced by carbon-ion irradiation on the titanium surface. The observed molten surface structures and recrystallized layer (20 μm depth) indicated that the surfaces reached high temperatures as a result of the irradiation. The implantation of intense pulsed metal ion beams (Al +, ˜ 20 A/cm 2) with simultaneous deposition of anode metal vapor on Ti and Fe made a mixed layer of AlTi and AlFe of about 0.5 μm depth. Ti and B multilayered films evaporated on glass substrates were irradiated by intense pulsed proton beams of relatively lower current density (10-200 A/cm 2). Ti films containing B atoms above 10 at.% were obtained. When the current density was about 200 A/cm 2 diffraction peaks of TiB 2 appeared.

Ion beam characteristics of the controlatron/zetatron family of the gas filled neutron tubes

Energy Technology Data Exchange (ETDEWEB)

Berg, R.S.; Shope, L.A.; O' Neal, M.L.; Boers, J.E.; Bickes, R.W. Jr.

1981-03-01

A gas filled tube used to produce a neutron flux with the D(T,He/sup 4/)n reaction is described. Deuterium and tritium ions generated in a reflex discharge are extracted and accelerated to 100 keV by means of an accelerator electrode onto a deutero-tritide target electrode. The electrodes are designed to focus the ion beam onto the target. Total tube currents consisting of extracted ions, unsuppressed secondary electrons, and ions generated by interactions with the background gas are typically 100 mA. The characteristics of the extracted ion beam are discussed. Accelerating voltages greater than 50 kV are required to focus the beam through the accelerator aperture for configurations that give beams with the proper energy density onto the target. The perveance of the beam is discussed. Maximum perveance values are 2 to 20 nanopervs. Tube focusing and neutron production characteristics are described.

Neutralized drift compression experiments with a high-intensity ion beam

International Nuclear Information System (INIS)

Roy, P.K.; Yu, S.S.; Waldron, W.L.; Anders, A.; Baca, D.; Barnard, J.J.; Bieniosek, F.M.; Coleman, J.; Davidson, R.C.; Efthimion, P.C.; Eylon, S.; Friedman, A.; Gilson, E.P.; Greenway, W.G.; Henestroza, E.; Kaganovich, I.; Leitner, M.; Logan, B.G.; Sefkow, A.B.; Seidl, P.A.; Sharp, W.M.; Thoma, C.; Welch, D.R.

2007-01-01

To create high-energy density matter and fusion conditions, high-power drivers, such as lasers, ion beams, and X-ray drivers, may be employed to heat targets with short pulses compared to hydro-motion. Both high-energy density physics and ion-driven inertial fusion require the simultaneous transverse and longitudinal compression of an ion beam to achieve high intensities. We have previously studied the effects of plasma neutralization for transverse beam compression. The scaled experiment, the Neutralized Transport Experiment (NTX), demonstrated that an initially un-neutralized beam can be compressed transversely to ∼1 mm radius when charge neutralization by background plasma electrons is provided. Here, we report longitudinal compression of a velocity-tailored, intense, neutralized 25 mA K + beam at 300 keV. The compression takes place in a 1-2 m drift section filled with plasma to provide space-charge neutralization. An induction cell produces a head-to-tail velocity ramp that longitudinally compresses the neutralized beam, enhances the beam peak current by a factor of 50 and produces a pulse duration of about 3 ns. The physics of longitudinal compression, experimental procedure, and the results of the compression experiments are presented

Development of a radioactive ion beam test stand at LBNL

International Nuclear Information System (INIS)

Burke, J.; Freedman, S.J.; Fujikawa, B.; Gough, R.A.; Lyneis, C.M.; Vetter, P.; Wutte, D.; Xie, Z.Q.

1998-01-01

For the on-line production of a 14 O + ion beam, an integrated target--transfer line ion source system is now under development at LBNL. 14 O is produced in the form of CO in a high temperature carbon target using a 20 MeV 3 He beam from the LBNL 88'' Cyclotron via the reaction 12 C( 3 He,n) 14 O. The neutral radioactive CO molecules diffuse through an 8 m room temperature stainless steel line from the target chamber into a cusp ion source. The molecules are dissociated, ionized and extracted at energies of 20 to 30 keV and mass separated with a double focusing bending magnet. The different components of the setup are described. The release and transport efficiency for the CO molecules from the target through the transfer line was measured for various target temperatures. The ion beam transport efficiencies and the off-line ion source efficiencies for Ar, O 2 and CO are presented. Ionization efficiencies of 28% for Ar + , 1% for CO, 0.7% for O + , 0.33 for C + have been measured

Ion beam generated modes in the lower hybrid frequency range in a laboratory magnetoplasma

Science.gov (United States)

Van Compernolle, B.; Tripathi, S.; Gekelman, W. N.; Colestock, P. L.; Pribyl, P.

2012-12-01

The generation of waves by ion ring distributions is of great importance in many instances in space plasmas. They occur naturally in the magnetosphere through the interaction with substorms, or they can be man-made in ionospheric experiments by photo-ionization of neutral atoms injected perpendicular to the earth's magnetic field. The interaction of a fast ion beam with a low β plasma has been studied in the laboratory. Experiments were performed at the LArge Plasma Device (LAPD) at UCLA. The experiments were done in a Helium plasma (n ≃ 1012 \\ cm-3, B0 = 1000 G - 1800 G, fpe}/f{ce ≃ 1 - 5, Te = 0.25\\ eV, vte ≤ vA). The ion beam \\cite{Tripathi_ionbeam} is a Helium beam with energies ranging from 5 keV to 18 keV. The fast ion velocity is on the order of the Alfvén velocity. The beam is injected from the end of the machine, and spirals down the linear device. Waves were observed below fci in the shear Alfvén wave regime, and in a broad spectrum above fci in the lower hybrid frequency range, the focus of this paper. The wave spectra have distinct peaks close to ion cyclotron harmonics, extending out to the 100th harmonic in some cases. The wave generation was studied for various magnetic fields and background plasma densities, as well as for different beam energies and pitch angles. The waves were measured with 3-axis electric and magnetic probes. Detailed measurements of the perpendicular mode structure will be shown. Langmuir probes were used to measure density and temperature evolution due to the beam-plasma interaction. Retarding field energy analyzers captured the ion beam profiles. The work was performed at the LArge Plasma Device at the Basic Plasma Science Facility (BaPSF) at UCLA, funded by DOE/NSF.

Morphological change of self-organized protrusions of fluoropolymer surface by ion beam irradiation

International Nuclear Information System (INIS)

Kitamura, Akane; Kobayashi, Tomohiro; Satoh, Takahiro; Koka, Masashi; Kamiya, Tomihiro; Suzuki, Akihiro; Terai, Takayuki

2013-01-01

Polytetrafluoroethylene (PTFE) and fluorinated ethylene propylene (FEP) are typical fluoropolymers displaying several desirable technological properties such as electrical insulation and high chemical resistance. When their surfaces are irradiated with ion beams, dense micro-protrusions formed after the emergence and spread of micropores across the entire irradiated area, allowing culture cells to spread on the top of the protrusions. In this study, we investigate the morphological changes introduced in the fluoropolymer surfaces by ion beams as the energy of the beams is increased. When an FEP sample was irradiated with a nitrogen ion beam with an energy of less than 350 keV at 1.0 μA/cm 2 , protrusions were formed with a density between 2 × 10 7 /cm 2 and 2 × 10 8 /cm 2 . However, at energies higher than 350 keV, the protrusions became sparse, and the density dropped to 5 × 10 2 /cm 2 . Protrusions appeared sporadically during irradiation at high energies, and the top of the protrusions appeared as spots inside the sample, which were difficult to etch and became elongated as the erosion of the surface progressed. Erosion was caused by sputtering of FEP molecules and evaporation at notably elevated temperatures on the surface. Analysis based on attenuated total reflectance/Fourier transform infrared spectroscopy showed the presence of C=C bonds as well as –COOH, –C=O, and –OH bonds on all irradiated samples. Their concentration on the surface densely covered with micro-protrusions was higher than that on the surface with sparse protrusions after irradiation at energies exceeding 350 keV. Thus, we determined a suitable range for the ion energy for creating FEP surfaces densely covered with protrusions

Design of an Acceleration / Deceleration Lens System for Ion Beam Focusing Emerging from Penning Ion Source

International Nuclear Information System (INIS)

El-Khabeary, H.

2007-01-01

In this study, design of the deceleration lens system has been done by using SIMION 3D version 7.0 computer program. A parallel beam of singly charged argon ions of diameter 2. mm with energy of 5 KeV emerging from Penning ion source was started at a distance of 140 mm before entering the Einzel lens system (three cylinder electrodes ). In order to design this deceleration lens system, two and three cylinder lenses with different parameters are studied. Ion beam emittance as a function of the gap width of the deceleration lens system has been studied for singly charged argon ion trajectories. Influence of the deceleration voltage applied on the deceleration electrode with different voltages of the four electrodes on the ion beam emittance has been investigated with gap widths of 3, 7, 9, 11 and 15 nun. The deceleration lens system was also used as an acceleration lens system by changing and optimising the voltage on each electrode of the deceleration lens system and of the intermediate electrode of the Einzel lens

Is low-energy-ion bombardment generated X-ray emission a secondary mutational source to ion-beam-induced genetic mutation?

Energy Technology Data Exchange (ETDEWEB)

Thongkumkoon, P. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand); Prakrajang, K. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Faculty of Science, Maejo University, Chiang Mai 50290 (Thailand); Thopan, P.; Yaopromsiri, C. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Suwannakachorn, D. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand); Yu, L.D., E-mail: yuld@fnrf.science.cmu.ac.th [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand)

2013-07-15

Highlights: ► Detected X-ray emission from metal, plastic and biological samples. ► Characteristic X-ray emission was detected from metal but not from non-metals. ► Low-energy ion bombarded bacteria held in different sample holders. ► Bacteria held in metal holder had higher mutation rate than in plastic holder. ► Ion-beam-induced X-ray from biological sample is not a basic mutation source. -- Abstract: Low-energy ion beam biotechnology has achieved tremendous successes in inducing crop mutation and gene transfer. However, mechanisms involved in the related processes are not yet well understood. In ion-beam-induced mutation, ion-bombardment-produced X-ray has been proposed to be one of the secondary mutation sources, but the speculation has not yet been experimentally tested. We carried out this investigation to test whether the low-energy ion-beam-produced X-ray was a source of ion-beam-induced mutation. In the investigation, X-ray emission from 29-keV nitrogen- or argon- ion beam bombarded bacterial Escherichia coli (E. coli) cells held in a metal or plastic sample holder was in situ detected using a highly sensitive X-ray detector. The ion beam bombarded bacterial cells held in different material holders were observed for mutation induction. The results led to a conclusion that secondary X-ray emitted from ion-beam-bombarded biological living materials themselves was not a, or at least a negligible, mutational source, but the ion-beam-induced X-ray emission from the metal that made the sample holder could be a source of mutation.

Is low-energy-ion bombardment generated X-ray emission a secondary mutational source to ion-beam-induced genetic mutation?

International Nuclear Information System (INIS)

Thongkumkoon, P.; Prakrajang, K.; Thopan, P.; Yaopromsiri, C.; Suwannakachorn, D.; Yu, L.D.

2013-01-01

Highlights: ► Detected X-ray emission from metal, plastic and biological samples. ► Characteristic X-ray emission was detected from metal but not from non-metals. ► Low-energy ion bombarded bacteria held in different sample holders. ► Bacteria held in metal holder had higher mutation rate than in plastic holder. ► Ion-beam-induced X-ray from biological sample is not a basic mutation source. -- Abstract: Low-energy ion beam biotechnology has achieved tremendous successes in inducing crop mutation and gene transfer. However, mechanisms involved in the related processes are not yet well understood. In ion-beam-induced mutation, ion-bombardment-produced X-ray has been proposed to be one of the secondary mutation sources, but the speculation has not yet been experimentally tested. We carried out this investigation to test whether the low-energy ion-beam-produced X-ray was a source of ion-beam-induced mutation. In the investigation, X-ray emission from 29-keV nitrogen- or argon- ion beam bombarded bacterial Escherichia coli (E. coli) cells held in a metal or plastic sample holder was in situ detected using a highly sensitive X-ray detector. The ion beam bombarded bacterial cells held in different material holders were observed for mutation induction. The results led to a conclusion that secondary X-ray emitted from ion-beam-bombarded biological living materials themselves was not a, or at least a negligible, mutational source, but the ion-beam-induced X-ray emission from the metal that made the sample holder could be a source of mutation

Optimization of the beam extraction systems for the Linac4 H{sup −} ion source

Energy Technology Data Exchange (ETDEWEB)

Fink, D. A.; Lettry, J.; Scrivens, R.; Steyaert, D. [CERN, 1211 Geneva 23 (Switzerland); Midttun, Ø. [University of Oslo, P.O. Box 1048, 0316 Oslo (Norway); CERN, 1211 Geneva 23 (Switzerland); Valerio-Lizarraga, C. A. [Departamento de Investigación en Fisica, Universidad de Sonora, Hermosillo (Mexico); CERN, 1211 Geneva 23 (Switzerland)

2015-04-08

The development of the Linac 4 and its integration into CERN’s acceleration complex is part of the foreseen luminosity upgrade of the Large Hadron Collider (LHC). The goal is to inject a 160 MeV H{sup −} beam into the CERN PS Booster (PSB) in order to increase the beam brightness by a factor of 2 compared to the 50 MeV proton linac, Linac 2, that is currently in operation. The requirements for the ion source are a 45 keV H{sup −} beam of 80 mA intensity, 2 Hz repetition rate and 0.5 ms pulse length within a normalized rms-emittance of 0.25 mm· mrad. The previously installed beam extraction system has been designed for an H{sup −} ion beam intensity of 20 mA produced by an RF-volume source with an electron to H{sup −} ratio of up to 50. For the required intensity upgrades of the Linac4 ion source, a new beam extraction system is being produced and tested; it is optimized for a cesiated surface RF-source with a nominal beam current of 40 mA and an electron to H{sup −} ratio of 4. The simulations, based on the IBSIMU code, are presented. At the Brookhaven National Laboratory (BNL), a peak beam current of more than 100 mA was demonstrated with a magnetron H{sup −} source at an energy of 35 keV and a repetition rate of 2 Hz. A new extraction system is required to operate at an energy of 45 keV; simulation of a two stage extraction system dedicated to the magnetron is presented.

Low-energy ion beam bombardment effect on the plant-cell-envelope mimetic membrane for DNA transfer

Energy Technology Data Exchange (ETDEWEB)

Prakrajang, K., E-mail: k.prakrajang@gmail.com [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Sangwijit, K.; Anuntalabhochai, S. [Molecular Biology Laboratory, Department of Biology, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Wanichapichart, P. [Membrane Science and Technology Research Center, Department of Physics, Faculty of Science, Prince of Songkla University, Hat Yai, Songkla 90112 (Thailand); Yu, L.D., E-mail: yuld@fnrf.science.cmu.ac.th [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand)

2012-09-01

This study is a systematic analysis of the mechanisms involved in ion-beam induced DNA transfer, an important application of ion beam biotechnology. Cellulose membranes were used to mimic the plant cell envelope. Ion beams of argon (Ar) or nitrogen (N) at an energy of 25 keV bombarded the cellulose membranes at fluences ranging from 10{sup 15} to 10{sup 16} ions/cm{sup 2}. The damage to the ion-beam-bombarded membranes was characterized using infrared spectroscopy, a micro tensile test and scanning electron microscopy (SEM). Chain scission was the dominant radiation damage type in the membrane. DNA diffusion across the membrane was significantly increased after ion beam bombardment. The increase in DNA transfer is therefore attributed to chain scission, which increases the permeability by increasing the number of pores in the membrane.

Space charge compensation in the Linac4 low energy beam transport line with negative hydrogen ions

Energy Technology Data Exchange (ETDEWEB)

Valerio-Lizarraga, Cristhian A., E-mail: cristhian.alfonso.valerio.lizarraga@cern.ch [CERN, Geneva (Switzerland); Departamento de Investigación en Física, Universidad de Sonora, Hermosillo (Mexico); Lallement, Jean-Baptiste; Lettry, Jacques; Scrivens, Richard [CERN, Geneva (Switzerland); Leon-Monzon, Ildefonso [Facultad de Ciencias Fisico-Matematicas, Universidad Autónoma de Sinaloa, Culiacan (Mexico); Midttun, Øystein [CERN, Geneva (Switzerland); University of Oslo, Oslo (Norway)

2014-02-15

The space charge effect of low energy, unbunched ion beams can be compensated by the trapping of ions or electrons into the beam potential. This has been studied for the 45 keV negative hydrogen ion beam in the CERN Linac4 Low Energy Beam Transport using the package IBSimu [T. Kalvas et al., Rev. Sci. Instrum. 81, 02B703 (2010)], which allows the space charge calculation of the particle trajectories. The results of the beam simulations will be compared to emittance measurements of an H{sup −} beam at the CERN Linac4 3 MeV test stand, where the injection of hydrogen gas directly into the beam transport region has been used to modify the space charge compensation degree.

Test facility for the development of 150-keV, multi-megawatt neutral beam systems

International Nuclear Information System (INIS)

Haughian, W.; Baker, W.R.; Biagi, L.A.; Hopkins, D.B.

1975-11-01

The next generation of CTR experiments, such as the Tokamak Fusion Test Reactor (TFTR), will require neutral-beam injection systems that produce multi-megawatt, 120-keV deuterium-beam pulses of 0.5-second duration. Since present injection systems are operating in the 10- to 40-keV range, an intensive development effort is in progress to meet a 150-keV requirement. The vacuum system and power supplies that make up a test facility to be used in the development of these injectors are described

Electron beam based transversal profile measurements of intense ion beams

International Nuclear Information System (INIS)

El Moussati, Said

2014-01-01

have been observed, which can be explained by the imprecise modelling of the charge distribution of an ion beam by the charged wires. The EBI diagnostic method has been applied for the first time in collaboration with the group of Professor Ulrich Ratzinger at the FRANZ accelerator at the Goethe University Frankfurt am Main for low-energy, DC ion beams - 4 He + at 13.5 keV and a current of approximately 1 mA. The transverse charge distribution of these beams has been successfully determined by this diagnostic method. However the maximum deflection angle of the electrons was nearly 1/3 of the one predicted by the theoretical model. When employing an electron filter located along the ion beam line before the diagnostic chamber an increase of the deflection angle was observed. This suggests that electrons are generated by collisions of ions with background gas in such an amount, that they strongly influence the electrostatic field of the ion beam. This fact has to be more closely investigated in the future.

Synthesizing single-phase β-FeSi2 via ion beam irradiations of Fe/Si bilayers

International Nuclear Information System (INIS)

Milosavljevic, M.; Dhar, S.; Schaaf, P.; Bibic, N.; Lieb, K.P.

2001-01-01

This paper presents results on the direct synthesis of the β-FeSi 2 phase by ion beam mixing of Fe/Si bilayers with Xe ions. The influence of the substrate temperature, ion fluence and energy on the growth of this phase was investigated using Rutherford backscattering (RBS), X-ray diffraction (XRD) and conversion electron Moessbauer spectroscopy (CEMS). Complete growth of single-phase β-FeSi 2 was achieved by 205 keV Xe ion irradiation to a fluence of 2x10 16 ions/cm 2 at 600 deg. C. We propose a two-step reaction mechanism involving thermal and ion beam energy deposition

Modeling of Low Frequency MHD Induced Beam Ion Transport In NSTX

International Nuclear Information System (INIS)

Gorelenkov, N.N.; Medley, S.S.

2004-01-01

Beam ion transport in the presence of low frequency MHD activity in National Spherical Tokamak Experiment (NSTX) plasma is modeled numerically and analyzed theoretically in order to understand basic underlying physical mechanisms responsible for the observed fast ion redistribution and losses. Numerical modeling of the beam ions flux into the NPA in NSTX shows that after the onset of low frequency MHD activity high energy part of beam ion distribution, E b > 40keV, is redistributed radially due to stochastic diffusion. Such diffusion is caused by high order harmonics of the transit frequency resonance overlap in the phase space. Large drift orbit radial width induces such high order resonances. Characteristic confinement time is deduced from the measured NPA energy spectrum and is typically ∼ 4msec. Considered MHD activity may induce losses on the order of 10% at the internal magnetic field perturbation (delta)B/B = Ο (10 -3 ), which is comparable to the prompt orbit losses

Enhancement of CNT-based filters efficiency by ion beam irradiation

Science.gov (United States)

Elsehly, Emad M.; Chechenin, N. G.; Makunin, A. V.; Shemukhin, A. A.; Motaweh, H. A.

2018-05-01

It is shown in the report that disorder produced by ion beam irradiation can enhance the functionality of the carbon nanotubes. The filters of pressed multiwalled carbon nanotubes (MWNTs) were irradiated by He+ ions of the energy E = 80 keV with the fluence 2 × 1016 ion/cm2. The removal of manganese from aqueous solutions by using pristine and ion beam irradiated MWNTs filters was studied as a function of pH, initial concentration of manganese in aqueous solution, MWNT mass and contact time. The filters before and after filtration were characterized by Raman (RS) and energy dispersive X-ray spectroscopy (EDS) techniques to investigate the deposition content in the filter and defect formation in the MWNTs. The irradiated samples showed an enhancement of removal efficiency of manganese up to 97.5% for 10 ppm Mn concentration, suggesting that irradiated MWNT filter is a better Mn adsorbent from aqueous solutions than the pristine one. Radiation-induced chemical functionalization of MWNTs due to ion beam irradiation, suggesting that complexation between the irradiated MWNTs and manganese ions is another mechanism. This conclusion is supported by EDS and RS and is correlated with a larger disorder in the irradiated samples as follows from RS. The study demonstrates that ion beam irradiation is a promising tool to enhance the filtration efficiency of MWNT filters.

Improving Aspergillus niger tannase yield by N+ ion beam implantation

Directory of Open Access Journals (Sweden)

Wei Jin

2013-02-01

Full Text Available This work aimed to improve tannase yield of Aspergillus niger through N+ ion beam implantation in submerged fermentation. The energy and dose of N+ ion beam implantation were investigated. The results indicated that an excellent mutant was obtained through nine successive implantations under the conditions of 10 keV and 30-40 (×2.6×10(13 ions/cm², and its tannase yield reached 38.5 U/mL, which was about five-time higher than the original strain. The study on the genetic stability of the mutant showed that its promising performance in tannase production could be stable. The studies of metal ions and surfactants affecting tannase yield indicated that manganese ions, stannum ions, xylene and SDS contained in the culture medium had positive effects on tannase production under submerged fermentation. Magnesium ions, in particular, could enhance the tannase yield by the mutant increasing by 42%, i.e. 53.6 U/mL. Accordingly, low-energy ion implantation could be a desirable approach to improve the fungal tannase yield for its commercial application.

Sputtering of solid nitrogen and oxygen by keV hydrogen ions

DEFF Research Database (Denmark)

Ellegaard, O.; Schou, Jørgen; Stenum, B.

1994-01-01

Electronic sputtering of solid nitrogen and oxygen by keV hydrogen ions has been studied at two low-temperature setups. The yield of the sputtered particles has been determined in the energy regime 4-10 keV for H+, H-2+ and H-3+ ions. The yield for oxygen is more than a factor of two larger than...... that for nitrogen. The energy distributions of the sputtered N2 and O2 molecules were measured for hydrogen ions in this energy regime as well. The yields from both solids turn out to depend on the sum of the stopping power of all atoms in the ion. The yield increases as a quadratic function of the stopping power...

Radioactive ion beams and techniques for solid state research

International Nuclear Information System (INIS)

Correia, J.G.

1998-01-01

In this paper we review the most recent and new applications of solid state characterization techniques using radioactive ion beams. For such type ofresearch, high yields of chemically clean ion beams of radioactive isotopesare needed which are provided by the on-line coupling of high resolution isotope separators to particle accelerators, such as the isotope separator on-line (ISOLDE) facility at CERN. These new experiments are performed by an increasing number of solid state groups. They combine nuclear spectroscopic techniques such as Moessbauer, perturbed angular correlations (PAC) and emission channeling with the traditional non-radioactive techniques liked deep level transient spectroscopy (DLTS) and Hall effect measurements. Recently isotopes of elements, not available before, were successfully used in new PAC experiments, and the first photoluminescence (PL) measurements, where the element transmutation plays the essential role on the PL peak identification, have been performed. The scope of applications of radioactive ion beams for research in solid state physics will be enlarged in the near future, with the installation at ISOLDE of a post-accelerator device providing radioactive beams with energies ranging from a few keV up to a few MeV. (orig.)

Performance test results of ion beam transport for SST-1 neutral beam injector

Energy Technology Data Exchange (ETDEWEB)

Jana, M R; Mattoo, S K [Institute for Plasma Research Bhat, Gandhinagar-382428, Gujarat (India); Uhlemann, R, E-mail: mukti@ipr.res.i [Forschungszentrum Juelich, Institute fur Energieforschung IEF-4, Plasmaphysik D-52425 Juelich (Germany)

2010-02-01

A neutral beam injector is built at IPR to heat the plasma of SST-1 and its upgrade. It delivers a maximum beam power of 1.7 MW for 55 kV Hydrogen beam or 80 kV Deuterium beam. At lower beam voltage, the delivered power falls to 500 kW at 30 kV Hydrogen beam which is adequate to heat SST-1 plasma ions to {approx} 1 keV. Process of acceleration of ions to the required beam voltage, conversion of ions to neutrals and removal of un-neutralized ions and the beam diagnostic systems occupy a large space. The consequence is that linear extent of the neutral beam injector is at least a few meters. Also, port access provides a very narrow duct. Even a very good injector design and fabrication practices keep beam divergence at a very low but finite value. The result is beam transport becomes an important issue. Since a wide area beam is constructed by hundreds of beam lets, it becomes essential they be focused in such a way that beam transport loss is minimized. Horizontal and vertical focal lengths are two parameters, in addition to beam divergence, which give a description of the beam transport. We have obtained these two parameters for our injector by using beam transport code; making several hundred simulation runs by varying optical parameters of the beam. The selected parameters set has been translated into the engineering features of the extractor grid set of the ion source. Aperture displacement technique is used to secure the horizontal beam focusing at 5.4 m. Combination of both aperture displacement and inclining of two grid halves to {approx} 17 mrad are secured for vertical beam focusing at 7 m from earth grid of the ion source. The gaps between the design, engineered and performance tested values usually arise due to lack of exercising control over fabrication processes or due to inaccuracies in the assumption made in the model calculations of beam optics and beam transport. This has been the case with several injectors, notably with JET injector. To overcome

Polyenergy ion beam synthesis of buried oxynitride layer in silicon

Energy Technology Data Exchange (ETDEWEB)

Barabanenkov, M.Yu. E-mail: barab@ipmt-hpm.ac.ru; Agafonov, Yu.A.; Mordkovich, V.N.; Pustovit, A.N.; Vyatkin, A.F.; Zinenko, V.I

2000-11-01

The efficiency of silicon oxynitride synthesis in silicon crystals implanted with substoichiometric doses of oxygen and nitrogen ions is investigated both experimentally and theoretically. Si crystals are implanted with oxygen and nitrogen ions with doses of 1.5 and 4.5x10{sup 17} cm{sup -2}, respectively, at fixed oxygen ion energy of 150 keV and nitrogen ion energies varied from 80 to 180 keV. The samples annealed at 1200 deg C for 2 h were analysed by secondary ion mass spectroscopy (SIMS). Theoretically, a `diffusion-alternative sinks' model is applied to the annealing stage of ion beam synthesis of a buried layer of a new phase in solids. It is shown that the maximum of the ternary phase production is attained when nitrogen ions are implanted deeper than oxygen ions. An explanation of this fact is given in terms of that (i) the segregation of oxygen and nitrogen species on the surface of oxide nuclei removes the kinetic restriction of nuclei growth, characteristic of oxide growth, at the expense of only oxygen atoms, and (ii) the higher the implantation energy the smoother the shape of ion range distribution in the target, which, in its turn, causes the predominance of the impurity sink over the impurity diffusion.

Polyenergy ion beam synthesis of buried oxynitride layer in silicon

International Nuclear Information System (INIS)

Barabanenkov, M.Yu.; Agafonov, Yu.A.; Mordkovich, V.N.; Pustovit, A.N.; Vyatkin, A.F.; Zinenko, V.I.

2000-01-01

The efficiency of silicon oxynitride synthesis in silicon crystals implanted with substoichiometric doses of oxygen and nitrogen ions is investigated both experimentally and theoretically. Si crystals are implanted with oxygen and nitrogen ions with doses of 1.5 and 4.5x10 17 cm -2 , respectively, at fixed oxygen ion energy of 150 keV and nitrogen ion energies varied from 80 to 180 keV. The samples annealed at 1200 deg C for 2 h were analysed by secondary ion mass spectroscopy (SIMS). Theoretically, a `diffusion-alternative sinks' model is applied to the annealing stage of ion beam synthesis of a buried layer of a new phase in solids. It is shown that the maximum of the ternary phase production is attained when nitrogen ions are implanted deeper than oxygen ions. An explanation of this fact is given in terms of that (i) the segregation of oxygen and nitrogen species on the surface of oxide nuclei removes the kinetic restriction of nuclei growth, characteristic of oxide growth, at the expense of only oxygen atoms, and (ii) the higher the implantation energy the smoother the shape of ion range distribution in the target, which, in its turn, causes the predominance of the impurity sink over the impurity diffusion

Determination of metastable fraction in an ion beam extracted from ECR plasma

International Nuclear Information System (INIS)

Matsumoto, Atsushi; Ohtani, Shunsuke; Iwai, Tsuruji.

1982-04-01

The fraction of metastable-state Ar 2 + (3p 4 1 D) ions in Ar 2 + beam has been determined by an optical attenuation method (OAM) combined with the conventional beam attenuation method. The present OAM is based on observation of spatial decay of specified emission line intensities arising from charge-changed ions, along the beam axis in a target gas cell. The validity of the OAM is discussed in detail. The cross sections for one-electron capture by the ground-state Ar 2 + ( 3 P) ions, σ 21 , and by the metastable-state Ar 2 + ( 1 D) ions, σ 21 *, from Na have been measured independently by the OAM. Both the cross sections are of the order of 10 - 14 cm 2 and σ 21 * is about 1.3 times as large as σ 21 at the collision energy of 1.5 keV. (author)

Origin of Si(LMM) Auger electron emission from silicon and Si-alloys by keV Ar/sup +/ ion bombardment

Energy Technology Data Exchange (ETDEWEB)

Iwami, M; Kim, S; Kataoka, Y; Imura, T; Hiraki, A [Osaka Univ., Suita (Japan). Faculty of Engineering

1980-09-01

Si(LMM) Auger electrons emitted from specimens of pure silicon and several Si-alloys (Ni-Si, Pd-Si and Cu-Si) under keV Ar/sup +/ ion bombardment, were examined. In the Auger spectra from all specimens studied there were four peaks at energies of 92, 86, 76 and 66 eV. The Auger signal intensity varied considerably with both the incident angle and the energy of the primary ion beam. It is proposed that the Auger electrons are emitted from silicon atoms (or ions) just beneath the specimen surface but free from the bulk network.

Operating characteristics of a new ion source for KSTAR neutral beam injection system.

Science.gov (United States)

Kim, Tae-Seong; Jeong, Seung Ho; Chang, Doo-Hee; Lee, Kwang Won; In, Sang-Ryul

2014-02-01

A new positive ion source for the Korea Superconducting Tokamak Advanced Research neutral beam injection (KSTAR NBI-1) system was designed, fabricated, and assembled in 2011. The characteristics of the arc discharge and beam extraction were investigated using hydrogen and helium gas to find the optimum operating parameters of the arc power, filament voltage, gas pressure, extracting voltage, accelerating voltage, and decelerating voltage at the neutral beam test stand at the Korea Atomic Energy Research Institute in 2012. Based on the optimum operating condition, the new ion source was then conditioned, and performance tests were primarily finished. The accelerator system with enlarged apertures can extract a maximum 65 A ion beam with a beam energy of 100 keV. The arc efficiency and optimum beam perveance, at which the beam divergence is at a minimum, are estimated to be 1.0 A/kW and 2.5 uP, respectively. The beam extraction tests show that the design goal of delivering a 2 MW deuterium neutral beam into the KSTAR Tokamak plasma is achievable.

Biomaterial imaging with MeV-energy heavy ion beams

Energy Technology Data Exchange (ETDEWEB)

Seki, Toshio, E-mail: seki@sakura.nucleng.kyoto-u.ac.jp [Department of Nuclear Engineering, Kyoto Univ., Uji, Kyoto 611-0011 (Japan); CREST, Japan Science and Technology Agency (JST), Chiyoda, Tokyo 102-0075 (Japan); Wakamatsu, Yoshinobu; Nakagawa, Shunichiro [Department of Nuclear Engineering, Kyoto Univ., Uji, Kyoto 611-0011 (Japan); Aoki, Takaaki [Department of Electronic Science and Engineering, Kyoto Univ., Nishikyo, Kyoto 615-8510 (Japan); CREST, Japan Science and Technology Agency (JST), Chiyoda, Tokyo 102-0075 (Japan); Ishihara, Akihiko [Laboratory of Cell Biology and Life Science, Graduate School of Human and Environmental Studies, Kyoto Univ., Sakyo, Kyoto 606-8501 (Japan); Matsuo, Jiro [Quantum Science and Engineering Center, Kyoto Univ., Uji, Kyoto 611-0011 (Japan); CREST, Japan Science and Technology Agency (JST), Chiyoda, Tokyo 102-0075 (Japan)

2014-08-01

The spatial distribution of several chemical compounds in biological tissues and cells can be obtained with mass spectrometry imaging (MSI). In conventional secondary ion mass spectrometry (SIMS) with keV-energy ion beams, elastic collisions occur between projectiles and atoms of constituent molecules. The collisions produce fragments, making the acquisition of molecular information difficult. In contrast, ion beams with MeV-energy excite near-surface electrons and enhance the ionization of high-mass molecules; hence, SIMS spectra of fragment-suppressed ionized molecules can be obtained with MeV-SIMS. To compare between MeV and conventional SIMS, we used the two methods based on MeV and Bi{sub 3}-keV ions, respectively, to obtain molecular images of rat cerebellum. Conventional SIMS images of m/z 184 were clearly observed, but with the Bi{sub 3} ion, the distribution of the molecule with m/z 772.5 could be observed with much difficulty. This effect was attributed to the low secondary ion yields and we could not get many signal counts with keV-energy beam. On the other hand, intact molecular ion distributions of lipids were clearly observed with MeV-SIMS, although the mass of all lipid molecules was higher than 500 Da. The peaks of intact molecular ions in MeV-SIMS spectra allowed us to assign the mass. The high secondary ion sensitivity with MeV-energy heavy ions is very useful in biomaterial analysis.

Biomaterial imaging with MeV-energy heavy ion beams

International Nuclear Information System (INIS)

Seki, Toshio; Wakamatsu, Yoshinobu; Nakagawa, Shunichiro; Aoki, Takaaki; Ishihara, Akihiko; Matsuo, Jiro

2014-01-01

The spatial distribution of several chemical compounds in biological tissues and cells can be obtained with mass spectrometry imaging (MSI). In conventional secondary ion mass spectrometry (SIMS) with keV-energy ion beams, elastic collisions occur between projectiles and atoms of constituent molecules. The collisions produce fragments, making the acquisition of molecular information difficult. In contrast, ion beams with MeV-energy excite near-surface electrons and enhance the ionization of high-mass molecules; hence, SIMS spectra of fragment-suppressed ionized molecules can be obtained with MeV-SIMS. To compare between MeV and conventional SIMS, we used the two methods based on MeV and Bi 3 -keV ions, respectively, to obtain molecular images of rat cerebellum. Conventional SIMS images of m/z 184 were clearly observed, but with the Bi 3 ion, the distribution of the molecule with m/z 772.5 could be observed with much difficulty. This effect was attributed to the low secondary ion yields and we could not get many signal counts with keV-energy beam. On the other hand, intact molecular ion distributions of lipids were clearly observed with MeV-SIMS, although the mass of all lipid molecules was higher than 500 Da. The peaks of intact molecular ions in MeV-SIMS spectra allowed us to assign the mass. The high secondary ion sensitivity with MeV-energy heavy ions is very useful in biomaterial analysis

In-Situ atomic force microscopic observation of ion beam bombarded plant cell envelopes

International Nuclear Information System (INIS)

Sangyuenyongpipat, S.; Yu, L.D.; Brown, I.G.; Seprom, C.; Vilaithong, T.

2007-01-01

A program in ion beam bioengineering has been established at Chiang Mai University (CMU), Thailand, and ion beam induced transfer of plasmid DNA molecules into bacterial cells (Escherichia coli) has been demonstrated. However, a good understanding of the fundamental physical processes involved is lacking. In parallel work, onion skin cells have been bombarded with Ar + ions at energy 25 keV and fluence1-2 x 10 15 ions/cm 2 , revealing the formation of microcrater-like structures on the cell wall that could serve as channels for the transfer of large macromolecules into the cell interior. An in-situ atomic force microscope (AFM) system has been designed and installed in the CMU bio-implantation facility as a tool for the observation of these microcraters during ion beam bombardment. Here we describe some of the features of the in-situ AFM and outline some of the related work

Compton polarimetry of 6-35 keV X-rays. Influence of Breit interaction on the linear polarisation of KLL dielectronic recombination transitions in highly charged ions

Energy Technology Data Exchange (ETDEWEB)

Joerg, Holger Eric

2016-12-21

The polarisation of X-rays emitted during K shell dielectronic recombination (DR) into highly charged ions was studied using electron beam ion traps. In the first experiment, the degree of linear polarisation of X-rays due to K shell DR transitions of highly charged krypton ions was measured with a newly developed Compton polarimeter based on SiPIN diodes. Such polarisation measurements allow a study of the population mechanism of magnetic sublevels in collisions between electrons and ions. In a second experiment, the influence of Breit interaction between electrons on the polarisation of X-rays emitted during K shell DR into highly charged xenon ions was studied. Here, polarisation measurements provide an access to the finer details of the electron-electron interaction in electron-ion collisions. Furthermore, a second Compton polarimeter based on silicon drift detectors has been developed for polarisation measurements at synchrotrons. It has been developed for X-ray polarimetry with a high energy resolution for energies between 6 keV and 35 keV. It was tested in the course of polarisation measurements at an electron beam ion trap and at a synchrotron radiation source.

Ion-beam plasma and propagation of intense compensated ion beams

Energy Technology Data Exchange (ETDEWEB)

Gabovich, M D [AN Ukrainskoj SSR, Kiev. Inst. Fiziki

1977-02-01

Discussed are the results of investigation of plasma properties received by neutralization of intense ion beam space charge. Considered is the process of ion beam compensation by charges, formed as a result of gas ionization by this beam or by externally introduced ones. Emphasis is placed on collective phenomena in ion-beam plasma, in particular on non-linear effects limiting amplitude of oscillations. It is shown that not only dynamic decompensation but the Coulomb collisions of ions with electrons as well as other collective oscillations significantly affects the propagation of compensated ion beams. All the processes are to be taken into account in solving the problem of obtaining ''superdense'' compensated beams.

Ion-beam plasma and propagation of intense compensated ion beams

International Nuclear Information System (INIS)

Gabovich, M.D.

1977-01-01

Discussed are the results of investigation of plasma properties recieved by neutralization of intensive ion beam space charge. Considered is the process of ion beam compensation by charges, formed as a result of gas ionization by this beam or by externally introduced ones. Emphasis is placed on collective phenomena in ion-beam plasma, in particular on non-linear effects limiting amplitude of oscillations. It is shown, that not only dinamic decompensation but the Coulomb collisions of ions with electrons as well as other collective oscillations significantly affects the propagation of compensated ion beams. All the processes are to be taken into account at solving the problem of obtaining ''superdense'' compensated beams

Initial Results on Neutralized Drift Compression Experiments (NDCX-IA) for High Intensity Ion Beam

CERN Document Server

Roy, Prabir K; Baca, David; Bieniosek, Frank; Coleman, Joshua E; Davidson, Ronald C; Efthimion, Philip; Eylon, Shmuel; Gilson, Erik P; Grant Logan, B; Greenway, Wayne; Henestroza, Enrique; Kaganovich, Igor D; Leitner, Matthaeus; Rose, David; Sefkow, Adam; Sharp, William M; Shuman, Derek; Thoma, Carsten H; Vanecek, David; Waldron, William; Welch, Dale; Yu, Simon

2005-01-01

Ion beam neutralization and compression experiments are designed to determine the feasibility of using compressed high intensity ion beams for high energy density physics (HEDP) experiments and for inertial fusion power. To quantitatively ascertain the various mechanisms and methods for beam compression, the Neutralized Drift Compression Experiment (NDCX) facility is being constructed at Lawrence Berkeley National Laboratory (LBNL). In the first compression experiment, a 260 KeV, 25 mA, K+ ion beam of centimeters size is radially compressed to a mm size spot by neutralization in a meter-long plasma column and beam peak current is longitudinally compressed by an induction velocity tilt core. Instrumentation, preliminary results of the experiments, and practical limits of compression are presented. These include parameters such as emittance, degree of neutralization, velocity tilt time profile, and accuracy of measurements (fast and spatially high resolution diagnostic) are discussed.

Operation and Development on the Positive-Ion Based Neutral Beam Injection System for JT-60 and JT-60U

International Nuclear Information System (INIS)

Kuriyama, M.; Akino, N.; Ebisawa, N.; Honda, A.; Itoh, T.; Kawai, M.; Mogaki, K.; Ohga, T.; Oohara, H.; Umeda, N.; Usui, K.; Yamamoto, M.; Yamamoto, T.; Matsuoka, M.

2002-01-01

The positive-ion based neutral beam injection (NBI) system for JT-60, which consists of 14 beamline units and has a beam energy of 70 to 100 keV, started operation in 1986 with hydrogen beams and injected a neutral beam power of 27 MW at 75 keV into the JT-60 plasma. In 1991, the NBI system was modified to be able to handle deuterium beams as part of the JT-60 upgrade modification. After executing some research and developments, deuterium beams of 40 MW at 95 keV were injected in 1996. As a result, NBI has contributed to the achievement of the highest performance plasmas, a DT-equivalent fusion power gain of 1.25 and a fusion triple product of 1.55 x 10 21 keVs/m 3 , in the world on JT-60U

Ion beam monitoring

International Nuclear Information System (INIS)

McKinney, C.R.

1980-01-01

An ion beam analyzer is specified, having an ion source for generating ions of a sample to be analyzed, means for extracting the sample ions, means for focusing the sample ions into a beam, separation means positioned along the ion beam for selectively deflecting species of ions, and means for detecting the selected species of ions. According to the specification, the analyzer further comprises (a) means for disabling at least a portion of the separation means, such that the ion beam from the source remains undeflected; (b) means located along the path of the undeflected ion beam for sensing the sample ions; and (c) enabling means responsive to the sensing means for automatically re-enabling the separation means when the sample ions reach a predetermined intensity level. (author)

Power supply for the LBL 40 keV neutral beam source

International Nuclear Information System (INIS)

Baker, W.R.; Fitzgerald, M.L.; Honey, V.J.

1975-11-01

A 20 keV, 50 Amp, 10 millisec pulse D 0 Neutral Beam Source at the Lawrence Berkeley Laboratory that serves as the prototype for 12 similar sources now in operation on the 2XIIB Mirror Machine at the Lawrence Livermore Laboratory has been recently upgraded to operate at 40 keV. The system of electronically regulated and controlled power supplies that drive the Source is described

Demonstration of direct energy recovery of full energy ions at 40 keV on a PLT/ISX beam system

International Nuclear Information System (INIS)

Stirling, W.L.; Barber, G.C.; Dagenhart, W.K.

1980-01-01

The desire for multisecond beams in the 80-keV/nucleon energy range at 10 MW/module has emphasized the need for technological advances in several areas. At such beam energies, as much as 75% of the initial beam energy is retained in the unneutralized ion components. As a result, two questions immediately come to mind: how can one dispose of this energy; or better still, how can one efficiently recover this energy. The conventional way of treating such a problem is to deflect the ions out of the neutral beam and onto water-cooled plates or beam dumps. This method has worked satisfactorily for 40-keV/nucleon beams in excess of 1.5 MW and approx. 0.5 s. However, the power per unit area to be disposed of in the high power, multisecond beams mentioned above is beyond present-day technology. We have proposed and demonstrated a unique solution to this problem which not only removes the need for beam dumps but also returns from 50 to 80% of the energy contained in the full energy ion component directly and dynamically to the high voltage supply. In fact, the energy in the residual ion component is not expended. The tests were made on a PLT/ISX type beam line at 40 keV/nucleon of about 800 kW and 0.1 s

Materials processing with intense pulsed ion beams

International Nuclear Information System (INIS)

Rej, D.J.; Davis, H.A.; Olson, J.C.

1996-01-01

We review research investigating the application of intense pulsed ion beams (IPIBs) for the surface treatment and coating of materials. The short range (0.1-10 μm) and high-energy density (1-50 J/cm 2 ) of these short-pulsed (≤ 1 μs) beams (with ion currents I = 5 - 50 kA, and energies E = 100 - 1000 keV) make them ideal to flash-heat a target surface, similar to the more familiar pulsed laser processes. IPIB surface treatment induces rapid melt and solidification at up to 10 10 K/s to cause amorphous layer formation and the production of non-equilibrium microstructures. At higher energy density the target surface is vaporized, and the ablated vapor is condensed as coatings onto adjacent substrates or as nanophase powders. Progress towards the development of robust, high-repetition rate IPIB accelerators is presented along with economic estimates for the cost of ownership of this technology

Structural and optical properties of 70-keV carbon ion beam synthesized carbon nanoclusters in thermally grown silicon dioxide

International Nuclear Information System (INIS)

Poudel, P.R.; Poudel, P.P.; Paramo, J.A.; Strzhemechny, Y.M.; Rout, B.; McDaniel, F.D.

2015-01-01

The structural and optical properties of carbon nanoclusters formed in thermally grown silicon dioxide film via the ion beam synthesis process have been investigated. A low-energy (70 keV) carbon ion beam (C - ) at a fluence of 3 x 10 17 atoms/cm 2 was used for implantation into a thermally grown silicon dioxide layer (500 nm thick) on a Si (100) wafer. Several parts of the implanted samples were subsequently annealed in a gas mixture (4 % H 2 + 96 % Ar) at 900 C for different time periods. The as-implanted and annealed samples were characterized by X-ray photoelectron spectroscopy (XPS), Fourier transform infrared spectroscopy, Raman spectroscopy, transmission electron microscopy (TEM), and photoluminescence spectroscopy (PL). The carbon ion implantation depth profile was simulated using a widely used Monte Carlo-based simulation code SRIM-2012. Additionally, the elemental depth profile of the implanted carbon along with host elements of silicon and oxygen were simulated using a dynamic ion-solid interaction code T-DYN, which incorporates the effects of the surface sputtering and gradual change in the elemental composition in the implanted layers due to high-fluence ion implantation. The elemental depth profile obtained from the XPS measurements matches closely to the T-DYN predictions. Raman measurements indicate the formation of graphitic phases in the annealed samples. The graphitic peak (G-peak) was found to be increased with the annealing time duration. In the sample annealed for 10 min, the sizes of the carbon nanoclusters were found to be 1-4 nm in diameter using TEM. The PL measurements at room temperature using a 325-nm laser show broad-band emissions in the ultraviolet to visible range in the as-implanted sample. Intense narrow bands along with the broad bands were observed in the annealed samples. The defects present in the as-grown samples along with carbon ion-induced defect centers in the as-implanted samples are the main contributors to the observed

Structural and optical properties of 70-keV carbon ion beam synthesized carbon nanoclusters in thermally grown silicon dioxide

Energy Technology Data Exchange (ETDEWEB)

Poudel, P.R. [University of North Texas, Ion Beam Modification and Analysis Laboratory, Department of Physics, Denton, TX (United States); Intel Corporation, Rio Rancho, NM (United States); Poudel, P.P. [University of Kentucky, Department of Chemistry, Lexington, KY (United States); Paramo, J.A.; Strzhemechny, Y.M. [Texas Christian University, Department of Physics and Astronomy, Fort Worth, TX (United States); Rout, B. [University of North Texas, Ion Beam Modification and Analysis Laboratory, Department of Physics, Denton, TX (United States); University of North Texas, Center for Advanced Research and Technology, Denton, TX (United States); McDaniel, F.D. [University of North Texas, Ion Beam Modification and Analysis Laboratory, Department of Physics, Denton, TX (United States)

2014-09-18

The structural and optical properties of carbon nanoclusters formed in thermally grown silicon dioxide film via the ion beam synthesis process have been investigated. A low-energy (70 keV) carbon ion beam (C{sup -}) at a fluence of 3 x 10{sup 17} atoms/cm{sup 2} was used for implantation into a thermally grown silicon dioxide layer (500 nm thick) on a Si (100) wafer. Several parts of the implanted samples were subsequently annealed in a gas mixture (4 % H{sub 2} + 96 % Ar) at 900 C for different time periods. The as-implanted and annealed samples were characterized by X-ray photoelectron spectroscopy (XPS), Fourier transform infrared spectroscopy, Raman spectroscopy, transmission electron microscopy (TEM), and photoluminescence spectroscopy (PL). The carbon ion implantation depth profile was simulated using a widely used Monte Carlo-based simulation code SRIM-2012. Additionally, the elemental depth profile of the implanted carbon along with host elements of silicon and oxygen were simulated using a dynamic ion-solid interaction code T-DYN, which incorporates the effects of the surface sputtering and gradual change in the elemental composition in the implanted layers due to high-fluence ion implantation. The elemental depth profile obtained from the XPS measurements matches closely to the T-DYN predictions. Raman measurements indicate the formation of graphitic phases in the annealed samples. The graphitic peak (G-peak) was found to be increased with the annealing time duration. In the sample annealed for 10 min, the sizes of the carbon nanoclusters were found to be 1-4 nm in diameter using TEM. The PL measurements at room temperature using a 325-nm laser show broad-band emissions in the ultraviolet to visible range in the as-implanted sample. Intense narrow bands along with the broad bands were observed in the annealed samples. The defects present in the as-grown samples along with carbon ion-induced defect centers in the as-implanted samples are the main

Progress toward a microsecond duration, repetitive, intense-ion beam for active spectroscopic measurements on ITER

International Nuclear Information System (INIS)

Davis, H.A.; Bartsch, R.R.; Barnes, C.W.

1996-01-01

The authors describe the design of an intense, pulsed, repetitive, neutral beam based on magnetically insulated diode technology for injection into ITER for spectroscopic measurements of thermalizing alpha particle and thermal helium density profiles, ion temperature, plasma rotation, and low Z impurity concentrations in the confinement region. The beam is being developed to enhance low signal-to-noise ratios expected with conventional steady-state ion beams because of severe beam attenuation and intense bremstrahlung emission. A 5 GW (e.g., 100 keV, 50 kA) one-microsecond-duration beam would increase the signal by 10 3 compared to a conventional 5 MW beam with signal-to-noise ratios comparable to those from a chopped conventional beam in one second

Preliminary research results for the generation and diagnostics of high power ion beams on FLASH II accelerator

International Nuclear Information System (INIS)

Yang Hailiang; Qiu Aici; Sun Jianfeng; He Xiaoping; Tang Junping; Wang Haiyang; Li Jingya; Ren Shuqing; Ouyang Xiaoping; Zhang Guoguang; Li Hongyu

2004-01-01

The preliminary experimental results of the generation and diagnostics of high-power ion beams on FLASH II accelerator are reported. The high-power ion beams presently are being produced in a pinched diode. The method for enhancing the ratio of ion to electron current is to increase the electron residing time by pinching the electron flow. Furthermore, electron beam pinching can be combined with electron reflexing to achieve ion beams with even higher efficiency and intensity. The anode plasma is generated by anode foil bombarded with electron and anode foil surface flashover. In recent experiments on FLASH II accelerator, ion beams have been produced with a current of 160 kA and an energy of 500 keV corresponding to an ion beam peak power of about 80 GW. The ion number and current of high power ion beams were determined by monitoring delayed radioactivity from nuclear reactions induced in a 12 C target by the proton beams. The prompt γ-rays and diode Bremsstrahlung X-rays were measured with a PIN semi-conductor detector and a plastic scintillator detector. The current density distribution of ion beam was measured with a biased ion collector array. The ion beams were also recorded with a CR-39 detector. (authors)

Efficient focusing of 8 keV X-rays with multilayer Fresnel zone plates fabricated by atomic layer deposition and focused ion beam milling

International Nuclear Information System (INIS)

Mayer, Marcel; Keskinbora, Kahraman; Grévent, Corinne; Szeghalmi, Adriana; Knez, Mato; Weigand, Markus; Snigirev, Anatoly; Snigireva, Irina; Schütz, Gisela

2013-01-01

The fabrication and performance of multilayer Al 2 O 3 /Ta 2 O 5 Fresnel zone plates in the hard X-ray range and a discussion of possible future developments considering available materials are reported. Fresnel zone plates (FZPs) recently showed significant improvement by focusing soft X-rays down to ∼10 nm. In contrast to soft X-rays, generally a very high aspect ratio FZP is needed for efficient focusing of hard X-rays. Therefore, FZPs had limited success in the hard X-ray range owing to difficulties of manufacturing high-aspect-ratio zone plates using conventional techniques. Here, employing a method of fabrication based on atomic layer deposition (ALD) and focused ion beam (FIB) milling, FZPs with very high aspect ratios were prepared. Such multilayer FZPs with outermost zone widths of 10 and 35 nm and aspect ratios of up to 243 were tested for their focusing properties at 8 keV and shown to focus hard X-rays efficiently. This success was enabled by the outstanding layer quality thanks to ALD. Via the use of FIB for slicing the multilayer structures, desired aspect ratios could be obtained by precisely controlling the thickness. Experimental diffraction efficiencies of multilayer FZPs fabricated via this combination reached up to 15.58% at 8 keV. In addition, scanning transmission X-ray microscopy experiments at 1.5 keV were carried out using one of the multilayer FZPs and resolved a 60 nm feature size. Finally, the prospective of different material combinations with various outermost zone widths at 8 and 17 keV is discussed in the light of the coupled wave theory and the thin-grating approximation. Al 2 O 3 /Ir is outlined as a promising future material candidate for extremely high resolution with a theoretical efficiency of more than 20% for as small an outermost zone width as 10 nm at 17 keV

Charge changing and excitation cross sections for 1-25 KeV hydrogen ions and atoms incident on sodium

International Nuclear Information System (INIS)

Howald, A.M.

1983-01-01

Measurements of charge changing and excitation cross sections for 1-25 keV beams of hydrogen atoms and ions incident on a sodium vapor target are reported. The charge changing cross sections are for reactions in which the incident H ion or atom gains or loses an electron during a collision with a Na atoms to form a hydrogen ion or atom in a different charge state. The six cross sections measured are sigma/sub +0/ and sigma/sub +-/ for incident protons, sigma/sub -0/ and sigma/sub -+/ for incident H - ions, and sigma/sub g-/ and sigma/sub g+/ for incident H(1s) atoms. Measurements are also reported for the negative, neutral, and positve equilibrium fractions for H beams in thick Na targets. The excitation cross sections are for reactions in which the Na target atom is excited to the 3p level by a collision with a H atom or ion. The five cross sections measured are for incident H + , H 2 + , H 3 + , and H - ions, and for H(1s) atoms. These cross sections are measured using a new technique that compares them directly to the known cross section for excitation by electron impact

Experimental study of interactions of highly charged ions with atoms at keV energies: Progress report for period May 15, 1985-February 15, 1987

International Nuclear Information System (INIS)

Kostroun, V.O.

1987-01-01

Interest in interactions of low energy highly charged ions with electrons, atoms or ions is due to their importance to controlled thermonuclear fusion research and the interesting nature of the fundamental processes involved. Studies of such interactions have long been hampered by a lack of suitable ions sources. A superconducting solenoid, cryogenic Electron Beam Ion Source, CEBIS, has been constructed at Cornell University to produce low energy very highly charged ions. At present, using a pulsed 0.5A,8.5 keV electron beam, the source is capable of producing highly charged ions of C,N,O, including bare nuclei, and ions of Ar up to charge state 11 + in 1 millisecond of confinement time. The source is being used in experiments to investigate charge transfer and accompanying processes in low energy, highly charged ion-atom collisions

Calculations of Neutral Beam Ion Confinement for the National Spherical Torus Experiment

International Nuclear Information System (INIS)

Redi, M.H.; Darrow, D.S.; Egedal, J.; Kaye, S.M.; White, R.B.

2002-01-01

The spherical torus (ST) concept underlies several contemporary plasma physics experiments, in which relatively low magnetic fields, high plasma edge q, and low aspect ratio combine for potentially compact, high beta and high performance fusion reactors. An important issue for the ST is the calculation of energetic ion confinement, as large Larmor radius makes conventional guiding center codes of limited usefulness and efficient plasma heating by RF and neutral beam ion technology requires minimal fast ion losses. The National Spherical Torus Experiment (NSTX) is a medium-sized, low aspect ratio ST, with R=0.85 m, a=0.67 m, R/a=1.26, Ip*1.4 MA, Bt*0.6 T, 5 MW of neutral beam heating and 6 MW of RF heating. 80 keV neutral beam ions at tangency radii of 0.5, 0.6 and 0.7 m are routinely used to achieve plasma betas above 30%. Transport analyses for experiments on NSTX often exhibit a puzzling ion power balance. It will be necessary to have reliable beam ion calculations to distinguish among the source and loss channels, and to explore the possibilities for new physics phenomena, such as the recently proposed compressional Alfven eigenmode ion heating

CR-39 nuclear track detector application for the diagnostics of low energy high power ion beams

Energy Technology Data Exchange (ETDEWEB)

Opekounov, M S; Pechenkin, S A; Remnev, G E [Nuclear Physics Institute, Tomsk (Russian Federation); Ivonin, I V [Siberian Physical-Technical Institute, Tomsk (Russian Federation)

1997-12-31

The results of investigation of the spectral composition of ion beams generated by the magneto-insulated ion diode of the MUK-M and TEMP accelerators. The energy and mass characteristics of the accelerated ion beam were determined by a Thomson spectrometer with a CR-39 plate detector (MOM - Atomki Nuclear Track Detector, Type MA-ND/p). The accelerated ion energy was from 40 to 240 keV. The ion current density range was from 1 to 10 A/cm{sup 2}. The mass composition contained hydrogen, nitrogen, carbon and aluminum ions. The individual track analysis showed the track form, depth and diameter in dependence on the ion mass and energy. (author). 2 figs., 5 refs.

Comparison of pulsed electron beam-annealed and pulsed ruby laser-annealed ion-implanted silicon

International Nuclear Information System (INIS)

Wilson, S.R.; Appleton, B.R.; White, C.W.; Narayan, J.; Greenwald, A.C.

1978-11-01

Recently two new techniques, pulsed electron beam annealing and pulsed laser annealing, have been developed for processing ion-implanted silicon. These two types of anneals have been compared using ion-channeling, ion back-scattering, and transmission electron microscopy (TEM). Single crystal samples were implanted with 100 keV As + ions to a dose of approx. 1 x 10 16 ions/cm 2 and subsequently annealed by either a pulsed Ruby laser or a pulsed electron beam. Our results show in both cases that the near-surface region has melted and regrown epitaxially with nearly all of the implanted As (97 to 99%) incroporated onto lattice sites. The analysis indicates that the samples are essentially defect free and have complete electrical recovery

Ionoluminescence properties of polystyrene-hosted fluorophore films induced by helium ions of energy 50-350 keV

Science.gov (United States)

Chakraborty, Subha; Huang, Mengbing

2017-10-01

We report on measurements and analysis of ionoluminescence properties of pure polystyrene films and polystyrene films doped with four types of fluorophores in low kinetic energies (50-350 keV) of ion irradiation. We have developed a theoretical model to understand the experimentally observed ionoluminescence behaviors in terms of scintillation yield from individual ion tracks, photophysical energy transfer mechanisms, and irradiation-induced defects. A comparison of the model and experimental results suggests that singlet up-conversion resulting from triplet-triplet annihilation processes may be responsible for enhanced singlet emission of the fluorophores at high ion beam flux densities. Energy transfer from the polystyrene matrix to the fluorophore molecules has been identified as an effective pathway to increasing the fluorescence efficiency in the doped scintillator films.

Energy analysis of the ion beam from plasma focus

International Nuclear Information System (INIS)

Kilic, H.; Nardi, V.; Prior, W.

1984-01-01

The authors have experimentally determined the energy spectrum of a deuteron beam in the energy interval 100 KeV ≤ E ≤ 10 MeV, with typical beam current I ≥ 1-2 A. A 5 kJ (15 kV, 49 μF) plasma focus machine is used to generate the ion beam at relatively low pressure 3-4 Torr D/sub 2/ (beam anode) and at higher pressure 6-8 Torr D/sub 2/ (high-neutron-yield mode). The spectrum is obtained from two different methods, i.e. from ion time of flight - by using time delays of Faraday cup signals with respect to hard x-ray signals - and from ion filtering, (mylar filter with different thickness from 2.5 μm up to 500 μm are used to cover the Faraday cup). The Faraday cup is located in a differentially pumed chamber (10/sup -4/ - 10/sup -5/ Torr) which is separated from the plasma focus chamber (8-3 Torr) by a 150 μm diam. pinhole (12.5 μm thick tungsten foil). The pinhole and Faraday cup are positioned on the gun axis at a distance of 15 cm and 25 cm from the end of the anode respectively

Ion beam induced epitaxy in Ge- and B- coimplanted silicon

International Nuclear Information System (INIS)

Hayashi, N.; Hasegawa, M.; Tanoue, H.; Takahashi, H.; Shimoyama, K.; Kuriyama, K.

1992-01-01

The epitaxial regrowth of amorphous surface layers in and Si substrate has been studied under irradiation with 400 keV Ar + ions at the temperature range from 300 to 435degC. The amorphous layers were obtained by Ge + implantation, followed by B + implantation. The ion beam assisted epitaxy was found to be sensitive to both the substrate orientation and the implanted Ge concentration, and the layer-by-layer epitaxial regrowth seemed to be precluded in Si layers with high doses of Ge implants, e.g., 2.5 x 10 15 ions/cm 2 . Electrical activation of implanted dopant B was also measured in the recrystallized Si layer. (author)

Demonstration of direct energy recovery of full-energy ions at 40 keV on a PLT/ISX beam system

International Nuclear Information System (INIS)

Stirling, W.L.; Barber, G.C.; Dagenhart, W.K.

1981-01-01

Neutral beam injection systems that employ positive ion sources presently operate at energies of about 40 to 50 keV/nucleon at 60 A [Princeton Large Torus (PLT)] or 100 A [Princeton Divertor Experiment (PDX) or the Oak Ridge National Laboratory (ORNL) Impurities Study Experiment (ISX)] with about 60% conversion efficiency. However, the desire for multisecond beams in the 80-keV/nucleon energy range at approx. 10 MW/module has emphasized the need for technological advances in several areas. At such beam energies, as much as 75% of the initial beam energy is retained in the unneutralized ion components. As a result, two questions immediately come to mind: (1) how can one dispose of this energy; or better still, (2) how can one efficiently recover this energy. We have proposed and demonstrated a unique solution to this problem that not only removes the need for beam dumps but also returns from 50 to 80% of the energy contained in the full energy ion component directly and dynamically to the high voltage supply. In fact, the energy in the residual ion component is not expended. The tests were made on a PLT/ISX-type beam line at 40 keV/nucleon with about 800 kW and 0.1 s

Ion-beam mixing in silicon and germanium at low temperatures

International Nuclear Information System (INIS)

Clark, G.J.; Marwick, A.D.; Poker, D.B.

1982-01-01

Ion-beam mixing of thin marker layers in amorphous silicon and germanium was studied using irradiations with Xe ions at temperatures of 34k and 77k. The marker species, ion energies and doses were: in silicon, markers of Ge and Pt irradiated with 200-keV Xe up to 2.7x10 16 ions cm -2 ; and in germanium, markers of Al and Si bombarded with 295-keV Xe up to 1.63x10 16 ions cm -2 . In silicon, Pt markers were found to broaden at about the same rate at 34k and 77k; and the rate of broadening was similar to that found by other workers when expressed as an efficiency of mixing, i.e., when dependence on ion dose and deposited energy was factored out. However, a Ge marker irradiated at 34k did not broaden from its original thickness. In germanium, markers of both Al and Si were mixed by irradiation at 34k, but at 77k only the Al marker broadened; the Si marker did not. The broadening of the markers is ascribed to ballistic mixing, while the cases where no broadening occurred are explicable if diffusion by a defect mechanism transported displaced marker atoms back to traps near their original sites

Combined analyses of ion beam synthesized layers in porous silicon

International Nuclear Information System (INIS)

Ramos, A.R.; Silva, M.F. da; Silva, M.R. da; Soares, J.C.; Paszti, F.; Horvath, Z.E.; Vazsonyi, E.; Conde, O.

2001-01-01

High dose ion implantation was used to form polycrystalline silicide films on porous silicon with different native concentrations of light impurities (C and O). Porous silicon layers several μm thick were implanted with 170 KeV Cr + ions to fluences of 3x10'1 7 ions/cm 2 both at room temperature and 450 o C. Similar samples were implanted with 100 keV Co + ions to fluences of 2x10 17 ions/cm 2 at room temperature and 350 o C and 450 o C. The formed silicide compounds were studied by Rutherford backscattering spectrometry, elastic recoil detection, glancing incidence X-ray diffraction, and four point-probe sheet resistance measurements. Selected Co implanted samples were analysed by cross-section transmission electron microscopy. Results show that the light impurities were partially expelled from the forming silicide layer. Combining cross-section transmission electron microscopy with ion beam methods it was possible to show that, in the implanted region, the porous structure collapses and densities during implantation, but the underlying porous silicon remains intact. The layer structure as well as the quality and type of the formed silicide, were found to depend on the original impurity level, implantation temperature, and annealing. (author)

Direct cryosorption pumping of an energetic hydrogen ion beam

International Nuclear Information System (INIS)

Schwenterly, S.W.; Ryan, P.M.; Tsai, C.C.

1979-01-01

Cryosorption pumps (CSP) are a prime candidate for the pumping of helium and deuterium-tritium (D-T) in tokamak divertor systems and may also see service in neutral beam injectors. However, the ability of a CSP to take high energy ions escaping from a plasma or neutral beam has not previously been demonstrated. In this study we arranged a 10-cm ion source of the type used in the Oak Ridge Tokamak (ORMAK) to inject a beam of ions directly into the inlet of a CSP. The pump contained two chevron baffles at 100K and 15K as well as a 15K cryosorption surface covered with a type 5A molecular sieve. The cryosurfaces were cooled by a closed-cycle helium refrigerator. For hydrogen ion pulses up to 11.5-keV energy and 1.3-A current, the pressure maintained during the pulse was only a few percent higher than that maintained with an equal flow of cold neutral gas. Pulse lengths of 100-300 ms were used. Calorimetric measurements showed that 40-60% of the I-V power was incident on the pump inlet. Cool-down and regeneration behavior of the pump will also be discussed

Ion beams provided by small accelerators for material synthesis and characterization

Science.gov (United States)

Mackova, Anna; Havranek, Vladimir

2017-06-01

The compact, multipurpose electrostatic tandem accelerators are extensively used for production of ion beams with energies in the range from 400 keV to 24 MeV of almost all elements of the periodic system for the trace element analysis by means of nuclear analytical methods. The ion beams produced by small accelerators have a broad application, mainly for material characterization (Rutherford Back-Scattering spectrometry, Particle Induced X ray Emission analysis, Nuclear Reaction Analysis and Ion-Microprobe with 1 μm lateral resolution among others) and for high-energy implantation. Material research belongs to traditionally progressive fields of technology. Due to the continuous miniaturization, the underlying structures are far beyond the analytical limits of the most conventional methods. Ion Beam Analysis (IBA) techniques provide this possibility as they use probes of similar or much smaller dimensions (particles, radiation). Ion beams can be used for the synthesis of new progressive functional nanomaterials for optics, electronics and other applications. Ion beams are extensively used in studies of the fundamental energetic ion interaction with matter as well as in the novel nanostructure synthesis using ion beam irradiation in various amorphous and crystalline materials in order to get structures with extraordinary functional properties. IBA methods serve for investigation of materials coming from material research, industry, micro- and nano-technology, electronics, optics and laser technology, chemical, biological and environmental investigation in general. Main research directions in laboratories employing small accelerators are also the preparation and characterization of micro- and nano-structured materials which are of interest for basic and oriented research in material science, and various studies of biological, geological, environmental and cultural heritage artefacts are provided too.

High energy Xe{sup +} ion beam induced ripple structures on silicon

Energy Technology Data Exchange (ETDEWEB)

Hanisch, Antje; Grenzer, Joerg; Facsko, Stefan; Winkler, Ingolf [Forschungszentrum Dresden-Rossendorf, Institute for Ion Beam Physics and Materials Research, Dresden (Germany); Biermanns, Andreas; Grigorian, Souren; Pietsch, Ullrich [University of Siegen (Germany). Institute of Physics

2008-07-01

Ion beam bombardment on semiconductor surfaces leads to well-defined morphological structures in the nanoscale range. Due to the impact of ions a self-organized wave-like surface structure develops. Ion bombardment causes an amorphization of a surface-adjacent layer of several nanometers and creates a periodical structure on the surface as well as at the amorphous-crystalline interface. We investigate the dependence of the periodicity on the crystallography of (100) silicon bombarded with Xe{sup +} ions, the ion beam incidence and the azimutal angle of the sample surface. So far we found that the ripple wavelength scales with the ion energy in a range of 5 to 70 keV. In order to understand the initiation of the ripple formation we also ask the question which role the initial surface structure plays. Therefore we investigate the formation of ripples on pre-structured and rough surfaces such as wafers with an intentional miscut. Therefore, we not only introduce a certain initial roughness but also vary the orientation of the (100) lattice plane in respect to the surface. We distinguish between ion beam induced surface effects (sputter erosion) and the influence of the crystalline Si lattice (strain) on the ripple formation.

A Scaled Beam-Combining Experiment for Heavy Ion Inertial Fusion

International Nuclear Information System (INIS)

Celata, C.M.; Chupp, W.W.; Faltens, A.; Fawley, W.M.; Ghiorso, W.; Hahn, K.; Henestroza, E.; MacLaren, S.; Peters, C.; Seidl, P.

1997-01-01

Transverse beam combining is a cost-saving option employed in many designs for induction linac heavy ion fusion drivers. The resultant transverse emittance increase, due predominantly to enharmonic space charge forces, must be kept minimal so that the beam remains focusable at the target. A prototype combining experiment has been built and preliminary results are presented. Four sources each produce up to 4.8 mA Cs+ beams at 160 keV. Focusing upstream of the merge consists of four quadruples and a final combined-function element (quadruple ampersand dipole). All lattice elements of the prototype are electrostatic. Due to the small distance between beams near the merge (-3-4 mm), the electrodes here are a cage of small rods, each at different voltage

Formation of plasmid DNA strand breaks induced by low-energy ion beam: indication of nuclear stopping effects

International Nuclear Information System (INIS)

Chen Yu; Jiang Bingyao; Chen Youshan; Ding Xingzhao; Liu Xianghuai; Chen Ceshi; Guo Xinyou; Yin Guanglin

1998-01-01

Plasmid pGEM 3zf(+) was irradiated by nitrogen ion beam with energies between 20 and 100 keV and the fluence kept as 1 x 10 12 ions/cm 2 . The irradiated plasmid was assayed by neutral electrophoresis and quantified by densitometry. The yields of DNA with single-strand and double-strand breaks first increased then decreased with increasing ion energy. There was a maximal yield value in the range of 20-100 keV. The relationship between DNA double-strand breaks (DSB) cross-section and linear energy transfer (LET) also showed a peak-shaped distribution. To understand the physical process during DNA strand breaks, a Monte Carlo calculation code known as TRIM (Transport of Ions in Matter) was used to simulate energy losses due to nuclear stopping and to electronic stopping. It can be assumed that nuclear stopping plays a more important role in DNA strand breaks than electronic stopping in this energy range. The physical mechanisms of DNA strand breaks induced by a low-energy ion beam are also discussed. (orig.)

Depth distribution of 2-keV helium-ion irradiation-induced cavities in nickel

International Nuclear Information System (INIS)

Fenske, G.; Das, S.K.; Kaminsky, M.

1981-01-01

Transmission electron microscopy has been used to study the effect of total dose on the depth distribution of cavities (voids or bubbles) in nickel irradiated at 500 0 C with 20-keV 4 He + ions. A transverse sectioning technique allowed us to obtain the entire depth distribution of cavities from a single specimen. The diameter, number density and volume fraction of cavities were measured as a function of depth from micrographs taken from samples sectioned parallel to the direction of the incident beam. Results for the doses at 2.9 x 10 15 and 2.9 x 10 16 ions/cm 2 show an increase in the average cavity diameter, number density and volume fraction with increasing dose. A further increase in dose from 2.9 x 10 16 to 2.9 x 10 17 ions/cm 2 also shows an increase in the average cavity diameter but a decrease in the number density. This observation is interpreted as evidence for the coalescence of cavities. 3 figures, 1 table

Efficient, radiation-hardened, 800-keV neutral beam injection system

International Nuclear Information System (INIS)

Anderson, O.A.; Cooper, W.S.; Goldberg, D.A.; Ruby, L.; Soroka, L.; Fink, J.H.

1982-10-01

Recent advances and new concepts in negative ion generation, transport, acceleration, and neutrailzation make it appear likely that an efficient, radiation-hardened neutral beam injection system could be developed in time for the proposed FED-A tokamak. These new developments include the operation of steady-state H - ion sources at over 5 A per meter of source length, the concept of using strong-focussing electrostatic structures for low-gradient dc acceleration of high-current sheet beams of negative ions and the transport of these beams around corners, and the development of powerful oxygen-iodine chemical lasers which will make possible the efficient conversion of the negative ions to neutrals using a photodetachment scheme in which the ion beam passes through the laser cavity

Nanostructures by ion beams

Science.gov (United States)

Schmidt, B.

Ion beam techniques, including conventional broad beam ion implantation, ion beam synthesis and ion irradiation of thin layers, as well as local ion implantation with fine-focused ion beams have been applied in different fields of micro- and nanotechnology. The ion beam synthesis of nanoparticles in high-dose ion-implanted solids is explained as phase separation of nanostructures from a super-saturated solid state through precipitation and Ostwald ripening during subsequent thermal treatment of the ion-implanted samples. A special topic will be addressed to self-organization processes of nanoparticles during ion irradiation of flat and curved solid-state interfaces. As an example of silicon nanocrystal application, the fabrication of silicon nanocrystal non-volatile memories will be described. Finally, the fabrication possibilities of nanostructures, such as nanowires and chains of nanoparticles (e.g. CoSi2), by ion beam synthesis using a focused Co+ ion beam will be demonstrated and possible applications will be mentioned.

An overview of the facilities, activities, and developments at the University of North Texas Ion Beam Modification and Analysis Laboratory (IBMAL)

Science.gov (United States)

Rout, Bibhudutta; Dhoubhadel, Mangal S.; Poudel, Prakash R.; Kummari, Venkata C.; Pandey, Bimal; Deoli, Naresh T.; Lakshantha, Wickramaarachchige J.; Mulware, Stephen J.; Baxley, Jacob; Manuel, Jack E.; Pacheco, Jose L.; Szilasi, Szabolcs; Weathers, Duncan L.; Reinert, Tilo; Glass, Gary A.; Duggan, Jerry L.; McDaniel, Floyd D.

2013-07-01

The Ion Beam Modification and Analysis Laboratory (IBMAL) at the University of North Texas includes several accelerator facilities with capabilities of producing a variety of ion beams from tens of keV to several MeV in energy. The four accelerators are used for research, graduate and undergraduate education, and industrial applications. The NEC 3MV Pelletron tandem accelerator has three ion sources for negative ions: He Alphatross and two different SNICS-type sputter ion sources. Presently, the tandem accelerator has four high-energy beam transport lines and one low-energy beam transport line directly taken from the negative ion sources for different research experiments. For the low-energy beam line, the ion energy can be varied from ˜20 to 80 keV for ion implantation/modification of materials. The four post-acceleration beam lines include a heavy-ion nuclear microprobe; multi-purpose PIXE, RBS, ERD, NRA, and broad-beam single-event upset; high-energy ion implantation line; and trace-element accelerator mass spectrometry. The NEC 3MV single-ended Pelletron accelerator has an RF ion source mainly for hydrogen, helium and heavier inert gases. We recently installed a capacitive liner to the terminal potential stabilization system for high terminal voltage stability and high-resolution microprobe analysis. The accelerator serves a beam line for standard RBS and RBS/C. Another beamline for high energy focused ion beam application using a magnetic quadrupole lens system is currently under construction. This beam line will also serve for developmental work on an electrostatic lens system. The third accelerator is a 200 kV Cockcroft-Walton accelerator with an RF ion source. The fourth accelerator is a 2.5 MV Van de Graaff accelerator, which was in operation for last several decades is currently planned to be used mainly for educational purpose. Research projects that will be briefly discussed include materials synthesis/modification for photonic, electronic, and

An overview of the facilities, activities, and developments at the University of North Texas Ion Beam Modification and Analysis Laboratory (IBMAL)

Energy Technology Data Exchange (ETDEWEB)

Rout, Bibhudutta; Dhoubhadel, Mangal S.; Poudel, Prakash R.; Kummari, Venkata C.; Pandey, Bimal; Deoli, Naresh T.; Lakshantha, Wickramaarachchige J.; Mulware, Stephen J.; Baxley, Jacob; Manuel, Jack E.; Pacheco, Jose L.; Szilasi, Szabolcs; Weathers, Duncan L.; Reinert, Tilo; Glass, Gary A.; Duggan, Jerry L.; McDaniel, Floyd D. [Ion Beam Modification and Analysis Laboratory, University of North Texas, Department of Physics, 1155 Union Circle 311427, Denton, Texas 76203 (United States)

2013-07-03

The Ion Beam Modification and Analysis Laboratory (IBMAL) at the University of North Texas includes several accelerator facilities with capabilities of producing a variety of ion beams from tens of keV to several MeV in energy. The four accelerators are used for research, graduate and undergraduate education, and industrial applications. The NEC 3MV Pelletron tandem accelerator has three ion sources for negative ions: He Alphatross and two different SNICS-type sputter ion sources. Presently, the tandem accelerator has four high-energy beam transport lines and one low-energy beam transport line directly taken from the negative ion sources for different research experiments. For the low-energy beam line, the ion energy can be varied from {approx}20 to 80 keV for ion implantation/modification of materials. The four post-acceleration beam lines include a heavy-ion nuclear microprobe; multi-purpose PIXE, RBS, ERD, NRA, and broad-beam single-event upset; high-energy ion implantation line; and trace-element accelerator mass spectrometry. The NEC 3MV single-ended Pelletron accelerator has an RF ion source mainly for hydrogen, helium and heavier inert gases. We recently installed a capacitive liner to the terminal potential stabilization system for high terminal voltage stability and high-resolution microprobe analysis. The accelerator serves a beam line for standard RBS and RBS/C. Another beamline for high energy focused ion beam application using a magnetic quadrupole lens system is currently under construction. This beam line will also serve for developmental work on an electrostatic lens system. The third accelerator is a 200 kV Cockcroft-Walton accelerator with an RF ion source. The fourth accelerator is a 2.5 MV Van de Graaff accelerator, which was in operation for last several decades is currently planned to be used mainly for educational purpose. Research projects that will be briefly discussed include materials synthesis/modification for photonic, electronic, and

Beam dynamics studies of the Heavy Ion Fusion Accelerator injector

International Nuclear Information System (INIS)

Henestroza, E.; Yu, S.S.; Eylon, S.

1995-04-01

A driver-scale injector for the Heavy Ion Fusion Accelerator project has been built at LBL. This machine has exceeded the design goals of high voltage (> 2 MV), high current (> 0.8 A of K + ) and low normalized emittance (< 1 π mm-mr). The injector consists of a 750 keV diode pre-injector followed by an electrostatic quadrupole accelerator (ESQ) which provides strong (alternating gradient) focusing for the space-charge dominated beam and simultaneously accelerates the ions to 2 MeV. The fully 3-D PIC code WARP together with EGUN and POISSON were used to design the machine and analyze measurements of voltage, current and phase space distributions. A comparison between beam dynamics characteristics as measured for the injector and corresponding computer calculations will be presented

Numerical simulation for the accelerator of the KSTAR neutral beam ion source

International Nuclear Information System (INIS)

Kim, Tae-Seong; Jeong, Seung Ho; In, Sang Ryul

2010-01-01

Recent experiments with a prototype long-pulse, high-current ion source being developed for the neutral beam injection system of the Korea Superconducting Tokamak Advanced Research have shown that the accelerator grid assembly needs a further upgrade to achieve the final goal of 120keV/65A for the deuterium ion beam. The accelerator upgrade concept was determined theoretically by simulations using the IGUN code. The simulation study was focused on finding parameter sets that raise the optimum perveance as large as possible and reduce the beam divergence as low as possible. From the simulation results, it was concluded that it is possible to achieve this goal by sliming the plasma grid (G1), shortening the second gap (G2-G3), and adjusting the G2 voltage ratio.

Experimental study of interactions of highly charged ions with atoms at keV energies. Progress report, February 16, 1993--April 15, 1994

International Nuclear Information System (INIS)

Kostroun, V.O.

1994-01-01

Experimental study of low energy, highly charged ions with other atomic species requires an advanced ion source such as an electron beam ion source, EBIS or an electron cyclotron ion source, ECRIS. Five years ago we finished the design and construction of the Cornell superconducting solenoid, cryogenic EBIS (CEBIS). Since then, this source has been in continuous operation in a program whose main purpose is the experimental study of interactions of highly charged ions with atoms at keV energies. This progress report for the period February 16, 1993 to April 15, 1994 describes the work accomplished during this time in the form of short abstracts

A 60 keV implanter for metals

International Nuclear Information System (INIS)

Leutenecker, R.; Ryssel, H.; Zeller, K.-H.; Spoehrle, H.P.

1985-01-01

The design and preliminary performance data of a 60 keV high current implanter for the implantation of non-separated ion beams into metals are described. The target chamber accepts samples up to 70 cm in diameter and is equipped with holders to implant ball bearings, axles and other components which have to be rotated during implantation. Samples are mounted on a rugged table which can move up to 35 kg for +-35 cm in the x and y directions. The implanter, including the vacuum system, is completely computer controlled. The ion source is equipped with an oven having a maximum temperature of 1200 0 C and can deliver ion beams of nitrogen as well as different metal ions such as tin and silver with currents up to 10 mA. (Auth.)

Computational simulation of electron and ion beams interaction with solid high-molecular dielectrics and inorganic glasses

International Nuclear Information System (INIS)

Milyavskiy, V.V.

1998-01-01

Numerical investigation of interaction of electron beams (with the energy within the limits 100 keV--20 MeV) and ion beams (with the energy over the range 1 keV--50 MeV) with solid high-molecular dielectrics and inorganic glasses is performed. Note that the problem of interaction of electron beams with glass optical covers is especially interesting in connection with the problem of radiation protection of solar power elements on cosmic satellites and stations. For computational simulation of the above-mentioned processes a mathematical model was developed, describing the propagation of particle beams through the sample thickness, the accumulation and relaxation of volume charge and shock-wave processes, as well as the evolution of electric field in the sample. The calculation of energy deposition by electron beam in a target in the presence of nonuniform electric field was calculated with the assistance of the semiempirical procedure, formerly proposed by author of this work. Propagation of the low energy ions through the sample thickness was simulated using Pearson IV distribution. Damage distribution, ionization distribution and range distribution was taken into account. Propagation of high energy ions was calculated in the approximation of continuous deceleration. For description of hydrodynamic processes the system of equations of continuum mechanics in elastic-plastic approximation and the wide-range equation of state were used

Modification of graphene by ion beam

Science.gov (United States)

Gawlik, G.; Ciepielewski, P.; Jagielski, J.; Baranowski, J.

2017-09-01

Ion induced defect generation in graphene was analyzed using Raman spectroscopy. A single layer graphene membrane produced by chemical vapor deposition (CVD) on copper foil and then transferred on glass substrate was subjected to helium, carbon, nitrogen, argon and krypton ions bombardment at energies from the range 25 keV to 100 keV. A density of ion induced defects and theirs mean size were estimated by using Raman measurements. Increasing number of defects generated by ion with increase of ion mass and decrease of ion energy was observed. Dependence of ion defect efficiency (defects/ion) on ion mass end energy was proportional to nuclear stopping power simulated by SRIM. No correlation between ion defect efficiency and electronic stopping power was observed.

Active trajectory control for a heavy ion beam probe on the compact helical system

International Nuclear Information System (INIS)

Fujisawa, A.; Iguchi, H.; Lee, S.; Crowley, T.P.; Hamada, Y.; Hidekuma, S.; Kojima, M.

1996-05-01

A 200 keV heavy ion beam probe (HIBP) on the Compact Helical System torsatron/heliotron uses a newly proposed method in order to control complicated beam trajectories in non-axisymmetrical devices. As a result, the HIBP has successfully measured potential profiles of the toroidal helical plasma. The article will describe the results of the potential profile measurements, together with the HIBP hardware system and procedures to realize the method. (author)

Linac4 low energy beam measurements with negative hydrogen ions

Energy Technology Data Exchange (ETDEWEB)

Scrivens, R., E-mail: richard.scrivens@cern.ch; Bellodi, G.; Crettiez, O.; Dimov, V.; Gerard, D.; Granemann Souza, E.; Guida, R.; Hansen, J.; Lallement, J.-B.; Lettry, J.; Lombardi, A.; Midttun, Ø.; Pasquino, C.; Raich, U.; Riffaud, B.; Roncarolo, F.; Valerio-Lizarraga, C. A.; Wallner, J.; Yarmohammadi Satri, M.; Zickler, T. [CERN, 1211 Geneva 23 (Switzerland)

2014-02-15

Linac4, a 160 MeV normal-conducting H{sup −} linear accelerator, is the first step in the upgrade of the beam intensity available from the LHC proton injectors at CERN. The Linac4 Low Energy Beam Transport (LEBT) line from the pulsed 2 MHz RF driven ion source, to the 352 MHz RFQ (Radiofrequency Quadrupole) has been built and installed at a test stand, and has been used to transport and match to the RFQ a pulsed 14 mA H{sup −} beam at 45 keV. A temporary slit-and-grid emittance measurement system has been put in place to characterize the beam delivered to the RFQ. In this paper a description of the LEBT and its beam diagnostics is given, and the results of beam emittance measurements and beam transmission measurements through the RFQ are compared with the expectation from simulations.

A new ion-beam laboratory for materials research at the Slovak University of Technology

Science.gov (United States)

Noga, Pavol; Dobrovodský, Jozef; Vaňa, Dušan; Beňo, Matúš; Závacká, Anna; Muška, Martin; Halgaš, Radoslav; Minárik, Stanislav; Riedlmajer, Róbert

2017-10-01

An ion beam laboratory (IBL) for materials research has been commissioned recently at the Slovak University of Technology within the University Science Park CAMBO located in Trnava. The facility will support research in the field of materials science, physical engineering and nanotechnology. Ion-beam materials modification (IBMM) as well as ion-beam analysis (IBA) are covered and deliverable ion energies are in the range from tens of keV up to tens of MeV. Two systems have been put into operation. First, a high current version of the HVEE 6 MV Tandetron electrostatic tandem accelerator with duoplasmatron and cesium sputtering ion sources, equipped with two end-stations: a high-energy ion implantation and IBA end-station which includes RBS, PIXE and ERDA analytical systems. Second, a 500 kV implanter equipped with a Bernas type ion source and two experimental wafer processing end-stations. The facility itself, operational experience and first IBMM and IBA experiments are presented together with near-future plans and ongoing development of the IBL.

Extraction of highly charged ions from the Berlin Electron Beam Ion Trap for interactions with a gas target

International Nuclear Information System (INIS)

Allen, F.I.; Biedermann, C.; Radtke, R.; Fussmann, G.

2006-01-01

Highly charged ions are extracted from the Berlin Electron Beam Ion Trap for investigations of charge exchange with a gas target. The classical over-the-barrier model for slow highly charged ions describes this process, whereby one or more electrons are captured from the target into Rydberg states of the ion. The excited state relaxes via a radiative cascade of the electron to ground energy. The cascade spectra are characteristic of the capture state. We investigate x-ray photons emitted as a result of interactions between Ar 17+ ions at energies ≤5q keV with Ar atoms. Of particular interest is the velocity dependence of the angular momentum capture state l c

Characterization of an ion beam produced by extraction and acceleration of ions from a wire plasma source

International Nuclear Information System (INIS)

Gueroult, R.

2011-09-01

In this study we first model a DC low pressure wire plasma source and then characterize the properties of an ion gun derived from the plasma source. In order to study the properties of the derived ion gun, we develop a particle-in-cell code fitted to the modelling of the wire plasma source operation, and validate it by confrontation with the results of an experimental study. In light of the simulation results, an analysis of the wire discharge in terms of a collisional Child-Langmuir ion flow in cylindrical geometry is proposed. We interpret the mode transition as a natural reorganization of the discharge when the current is increased above a threshold value which is a function of the discharge voltage, the pressure and the inter-electrodes distance. In addition, the analysis of the energy distribution function of ions impacting the cathode demonstrates the ability to extract an ion beam of low energy spread around the discharge voltage assuming that the discharge is operated in its high pressure mode. An ion source prototype allowing the extraction and acceleration of ions from the wire source is then proposed. The experimental study of such a device confirms that, apart from a shift corresponding to the accelerating voltage, the acceleration scheme does not spread the ion velocity distribution function along the axis of the beam. It is therefore possible to produce tunable energy (0 - 5 keV) ion beams of various ionic species presenting limited energy dispersion (∼ 10 eV). The typical beam currents are about a few tens of micro-amperes, and the divergence of such a beam is on the order of one degree. A numerical modelling of the ion source is eventually conducted in order to identify potential optimizations of the concept. (author)

Ion Beam Propulsion Study

Science.gov (United States)

2008-01-01

The Ion Beam Propulsion Study was a joint high-level study between the Applied Physics Laboratory operated by NASA and ASRC Aerospace at Kennedy Space Center, Florida, and Berkeley Scientific, Berkeley, California. The results were promising and suggested that work should continue if future funding becomes available. The application of ion thrusters for spacecraft propulsion is limited to quite modest ion sources with similarly modest ion beam parameters because of the mass penalty associated with the ion source and its power supply system. Also, the ion source technology has not been able to provide very high-power ion beams. Small ion beam propulsion systems were used with considerable success. Ion propulsion systems brought into practice use an onboard ion source to form an energetic ion beam, typically Xe+ ions, as the propellant. Such systems were used for steering and correction of telecommunication satellites and as the main thruster for the Deep Space 1 demonstration mission. In recent years, "giant" ion sources were developed for the controlled-fusion research effort worldwide, with beam parameters many orders of magnitude greater than the tiny ones of conventional space thruster application. The advent of such huge ion beam sources and the need for advanced propulsion systems for exploration of the solar system suggest a fresh look at ion beam propulsion, now with the giant fusion sources in mind.

Scanning ion microscopy with low energy lithium ions

International Nuclear Information System (INIS)

Twedt, Kevin A.; Chen, Lei; McClelland, Jabez J.

2014-01-01

Using an ion source based on photoionization of laser-cooled lithium atoms, we have developed a scanning ion microscope with probe sizes of a few tens of nanometers and beam energies from 500 eV to 5 keV. These beam energies are much lower than the typical operating energies of the helium ion microscope or gallium focused ion beam systems. We demonstrate how low energy can be advantageous in ion microscopy when detecting backscattered ions, due to a decreased interaction volume and the potential for surface sensitive composition analysis. As an example application that demonstrates these advantages, we non-destructively image the removal of a thin residual resist layer during plasma etching in a nano-imprint lithography process. - Highlights: • We use an ion source based on photoionization of laser-cooled lithium atoms. • The ion source makes possible a low energy (500 eV to 5 keV) scanning ion microscope. • Low energy is preferred for ion microscopy with backscattered ions. • We use the microscope to image a thin resist used in nano-imprint lithography

Study of the synthesized plasma resulting from forced neutralization of a mercury ions beam

International Nuclear Information System (INIS)

Spiess, G.

1969-01-01

When an ionic beam is used (space simulation etc...) it needs a forced space charge neutralization by means of electrons injection when the perturbations resulting from the ionic space charge are not already eliminated by the well known self neutralization of the beam on the back ground gas of the tank. We have shown that it is possible to obtain the forced neutralization of a low energy (a few KeV) Hg + ion beam, 10 cm in diameter, with a neutraliser made of a hot emissive filament located inside the beam close to the ion source. The computed solution of the plane waves dispersion equation has shown that the synthesized plasma, resulting from the neutralised beam, is damping fluctuations with any wave length when the average ions velocity is less than the neutralizing electrons thermal velocity. This last conclusion assumes that no external electromagnetic field is applied. When a longitudinal electric field is applied, by means of a polarized grid into the beam, the plasma stability range is changed. (author) [fr

Doppler-shift spectra of Hα lines from negative-ion-based neutral beams for large helical device neutral beam injection

International Nuclear Information System (INIS)

Oka, Y.; Ikeda, K.; Takeiri, Y.; Tsumori, K.; Kaneko, O.; Nagaoka, K.; Osakabe, M.; Asano, E.; Kondo, T.; Sato, M.; Shibuya, M.; Grisham, L.; Umeda, N.; Honda, A.; Ikeda, Y.; Yamamoto, T.

2006-01-01

The velocity spectra of the negative-ion-(H - ) based neutral beams are studied in high-performance large-area ion sources during injection into large helical device fusion plasmas. We are conducting systematic observations in standard neutral beam injection to correlate beam spectra with source operating conditions. Almost all of the transmitted beam power was at full acceleration energy (∼170 keV). The small stripping beam component which was produced in the extraction gap was evaluated to be about 9%-22% by amplitude of the measured spectra for the sources in beam lines 1 and 2. H - production uniformity from the spectrum profile was 86%-90% for three sources. For the longest pulse injection during 74 and 128 s, a full energy component tended to decrease with time, while the accelerator gap stripping tail tended to increase slightly with time, which is attributed to beam-induced outgassing in the accelerator. A higher conductance multislot ground grid accelerator appeared to show little growth in the accelerator gap beam stripping during long pulses compared to the conventional multiaperture ground grid. The beam uniformity appeared to vary in part with the Cs uniformity on the plasma grid

Stoichiometric carbon nitride synthesized by ion beam sputtering and post nitrogen ion implantation

International Nuclear Information System (INIS)

Valizadeh, R.; Colligon, J.S.; Katardiev, I.V.; Faunce, C.A.; Donnelly, S.E.

1998-01-01

Full text: Carbon nitride films have been deposited on Si (100) by ion beam sputtering a vitreous graphite target with nitrogen and argon ions with and without concurrent N2 ion bombardment at room temperature. The sputtering beam energy was 1000 eV and the assisted beam energy was 300 eV with ion / atom arrival ratio ranging from 0.5 to 5. The carbon nitride films were deposited both as single layer directly on silicon substrate and as multilayer between two layers of stoichiometric amorphous silicon nitride and polycrystalline titanium nitride. The deposited films were implanted ex-situ with 30 keV nitrogen ions with various doses ranging from 1E17 to 4E17 ions.cm -2 and 2 GeV xenon ion with a dose of 1E12 ions.cm -2 . The nitrogen concentration of the films was measured with Rutherford Backscattering (RBS), Secondary Neutral Mass Spectrometry (SNMS) and Parallel Electron Energy Loss Spectroscopy (PEELS). The nitrogen concentration for as deposited sample was 34 at% and stoichiometric carbon nitride C 3 N 4 was achieved by post nitrogen implantation of the multi-layered films. Post bombardment of single layer carbon nitride films lead to reduction in the total nitrogen concentration. Carbon K edge structure obtained from PEELS analysis suggested that the amorphous C 3 N 4 matrix was predominantly sp 2 bonded. This was confirmed by Fourier Transforrn Infra-Red Spectroscopy (FTIR) analysis of the single CN layer which showed the nitrogen was mostly bonded with carbon in nitrile (C≡N) and imine (C=N) groups. The microstructure of the film was determined by Transmission Electron Microscopy (TEM) which indicated that the films were amorphous

Status report on a dc 130-mA, 75-keV proton injector

International Nuclear Information System (INIS)

Sherman, J.; Arvin, A.; Hodgkins, D.

1997-01-01

A 110-mA, 75-keV dc proton injector is being developed at Los Alamos. We use a microwave proton source coupled to a two solenoid, space-charge neutralized, low-energy beam transport (LEBT) system. The ion source produces 110-mA proton current at 75 keV using 600 - 800 W of 2.45 GHz input discharge power. Typical proton fraction is 85-90% of the total extracted ion current, and the rms normalized beam emittance after transport through a prototype 2.1 m LEBT is 0.20 (πmm-mrad). Beam space-charge neutralization is measured to be > 98% which enables the solenoid magnetic transport to successfully match the injector beam into a radio-frequency quadrupole (RFQ). Beam simulations indicate small emittance growth in the proposed 2.8 m low-energy demonstration accelerator (LEDA) LEBT. The LEBT also contains beam diagnostics, steering, and a beam deflector for variable duty factor and accelerator fast protect functions. The injector computer controls and reliability status are also discussed

Development of ion beam sputtering technology for mold and die

International Nuclear Information System (INIS)

Lee, Jaehyung; Park, J.; Lee, J.; Jil, J.; Yang, D.; Noh, Y.; You, B.; You, J.

2003-06-01

Ion beam sputtering technique, one of the surface modification techniques, is to reduce surface roughness of materials with selective detaching atoms and micro particles from the surface by bombarding energetic ions of a few to a few tens keV onto the materials surfaces. This technique can be applied for the surfaces that need to have sub micrometer surface roughness, and it has already been used by companies and/or Institute over the world. Although this is relatively high cost process, it has been widely demanded in the industries with developing the eco-friend equipment due to its high quality of products. In the domestic industry, it has been pointed out that the mechanical polishing technique for molds and dies is relatively expensive and does not produce the required surface roughness. Therefore, in this R and D, techniques obtained from the ion source and the ion beam irradiation techniques developed for the proton accelerator has been applied to polish the surface of molds and dies to solve the above-mentioned problems that take place during mechanical polishing. In case that ion beam polishing technique is used, we expect not only producing the high quality polished surfaces but also producing the economically valuable end-products. In this R and D project, we are aiming at establishing ion beam techniques for industrialization as well as mass production of low cost products with developing the economical instrumentation techniques. Also, as a result of this R and D it is expected that importing of precise molds and dies may be reduced and technical competitiveness will be enhanced

Increase of the positive ion source power in JT-60 NBI

International Nuclear Information System (INIS)

Kawai, Mikito; Akino, Noboru; Ebisawa, Noboru

1998-09-01

Neutral Beam Injection (NBI) heating experiment in JT-60 started in 1986, and the rated injection power of 20MW at 75keV with hydrogen was achieved after several month operation. In 1991, the ion sources and power supply had been upgraded for a higher beam energy up to 120keV with deuterium, following which the ion source operation re-started aiming for an injection power of 40MW at 110keV. In the operation, the beam acceleration voltage was tried to increase by modifying the ion source structure against the break-down which occurred frequently in the ion source. The beam acceleration was, however, unstable in a beam energy range of more than 105keV because of voltage-holding deterioration in the accelerator. Therefore we changed the strategy to increase the injection power: i.e. we tried to increase the beam current with keeping the beam energy. The structure of the source has been modified to be operated in a high current regime. As a result, the deuterium neutral beam injection of 40MW at 91-96keV was achieved in July 1996. (author)

Development of a high brightness ion source for IFMIF and preliminary test results

International Nuclear Information System (INIS)

Iga, Takashi; Okumura, Yoshikazu; Kashiwagi, Mieko

2001-05-01

Development of a high brightness ion source for the 40MeV/250mA deuteron beam accelerator, IFMIF, is in progress at JAERI. A prototype ion source using hot filament cathodes has been developed. This ion source consists of a multi-cusp plasma generator and a two-stage accelerator. Beam optics has been investigated at the energy of up to 60keV. Experimental results of the beam optics agreed well with the simulation by assuming that the equivalent ion mass is 2.38. Ion beam of 60keV/100mA H+, which corresponds to ion beam of 100keV/220mA D+, was obtained with optimum perveance (minimum divergence). This result indicates that the current requirement for the IFMIF ion source would be satisfied with this ion source. (author)

Measurement of electron- and ion beam energies and currents in a plasma focus discharge

International Nuclear Information System (INIS)

Yamamoto, Toshikazu; Kondoh, Yoshiomi; Shimoda, Katsuji; Hirano, Katsumi

1982-01-01

Measurements of energetic particle beams in a plsma focus with a Mather type device are presented. Rogowski coils are used for time-resolved measurement, and solid-state nuclear track detectors for time-integrated measurement of the beams. In the upstream direction with respect to the discharge current, only the electron beam with the maximum current of several kA was detected, which was approximately one percent of the discharge current. The electron energies of the beam were spread from 0.1 to 1 MeV. In the downstream direction, two successive emissions of ions were observed. The first emission had an extremely high energy of the order of some MeV and a low beam current of less than 10 A. The second emission, the main part of the ion beam, with energies of 100 - 800 keV, followed the first one with a time lag of several tens of nanoseconds, and the beam current reached several tens of amperes. (author)

Modification and structuring of conducting polymer films on insulating substrates by ion beam treatment

International Nuclear Information System (INIS)

Asmus, T.; Wolf, Gerhard K.

2000-01-01

Besides the commonly used procedures of UV-, X-ray and electron beam lithography, surface structuring by ion beam processes represents an alternative route to receive patterns in the nanometre-micrometre scale. In this work we focused on changes of surface properties of the polymer materials induced by ion irradiation and on reproducing hexagonal and square patterns in the micrometre scale. To achieve a better understanding of modification and structuring of insulating and conducting polymers by ion beam treatment we investigated effects of 14 keV Ar + bombardment on thin films of doped conducting polyethoxithiophene (PEOT) and polyethylenedioxithiophene (PEDT) on polyethersulfone (PES) as insulating substrate within the fluence range from 10 14 to 10 17 ions/cm 2 . Changes of surface properties like wettability, solubility, topology and electrochemical behaviour have been studied by contact angle technique, AFM/LFM, cyclovoltammetry and electrochemical microelectrode. By irradiation through copper masks structured patterns were achieved. These patterns can be converted by galvanic or electroless copper deposition in structured metal layers

Development of a pepper-pot emittance meter for diagnostics of low-energy multiply charged heavy ion beams extracted from an ECR ion source

Energy Technology Data Exchange (ETDEWEB)

Nagatomo, T., E-mail: nagatomo@riken.jp; Kase, M.; Kamigaito, O.; Nakagawa, T. [Nishina Center for Accelerator Based Science, RIKEN, Wako, Saitama 351-0198 (Japan); Tzoganis, V. [Nishina Center for Accelerator Based Science, RIKEN, Wako, Saitama 351-0198 (Japan); Cockcroft Institute, Daresbury, Warrington WA4 4AD (United Kingdom); Department of Physics, University of Liverpool, Liverpool, Merseyside L69 3BX (United Kingdom)

2016-02-15

Several fluorescent materials were tested for use in the imaging screen of a pepper-pot emittance meter that is suitable for investigating the beam dynamics of multiply charged heavy ions extracted from an ECR ion source. SiO{sub 2} (quartz), KBr, Eu-doped CaF{sub 2}, and Tl-doped CsI crystals were first irradiated with 6.52-keV protons to determine the effects of radiation damage on their fluorescence emission properties. For such a low-energy proton beam, only the quartz was found to be a suitable fluorescent material, since the other materials suffered a decay in fluorescence intensity with irradiation time. Subsequently, quartz was irradiated with heavy {sup 12}C{sup 4+}, {sup 16}O{sup 4+}, and {sup 40}Ar{sup 11+} ions, but it was found that the fluorescence intensity decreased too rapidly to measure the emittance of these heavy-ion beams. These results suggest that a different energy loss mechanism occurs for heavier ions and for protons.

Mutagenic effects of nitrogen and carbon ions on stevia

International Nuclear Information System (INIS)

Wang Cailian; Chen Qiufang; Shen Mei; Lu Ting; Shu Shizhen

1998-06-01

Dry seeds of stevia were implanted by 60∼100 keV nitrogen ion and 75 keV carbon ion with various doses. The biological effects in M 1 and mutation in M 2 were studied. The results showed that ion beam was able to induce variation on chromosome structure and inhibited mitosis action in root tip cells. The rate of cells with chromosome aberration was increased with the increase of ion beam energy and dose. Energy effects of mitosis were presented between 75 keV and 60, 100 keV. As compared with γ-rays, the effects of ion beam were lower on chromosomal aberration but were higher on frequency of the mutation. The rate of cell with chromosome aberration and M 2 useful mutation induced by implantation of carbon ion was higher than those induced by implantation of nitrogen ion. Mutagenic effects of Feng 1 x Ri Yuan and of Ri Yuan x Feng 2 are higher than that of Ji Ning and Feng 2

Argonne National Laboratory heavy ion beam transport experiments with a 2 mA 80 keV Xe+1 source

International Nuclear Information System (INIS)

Mazarakis, M.; Price, D.; Watson, J.

1978-01-01

The critical dimensions of the Argonne heavy ion beam transmission experiments and the experimental set-up are considered. Experimental results of beam transmission and emittance measurements are discussed

Sputtering of solid nitrogen by keV helium ions

DEFF Research Database (Denmark)

Ellegaard, O.; Schou, Jørgen; Sørensen, H.

1993-01-01

Solid nitrogen has become a standard material among the frozen molecular gases for electronic sputtering. We have combined measurements of sputtering yields and energy spectra from nitrogen bombarded by 4-10 keV helium ions. The data show that the erosion is electronic rather than knockon...

Surface damage in cystine, an amino acid dimer, induced by keV ions.

Science.gov (United States)

Salles, R C M; Coutinho, L H; da Veiga, A G; Sant'Anna, M M; de Souza, G G B

2018-01-28

We have studied the interaction of an ion beam (17.6 keV F - ) with cystine, a dimer formed by the binding of two cysteine residues. Cystine can be considered as an ideal prototype for the study of the relevance of the disulfide (-S-S-) chemical bond in biomolecules. For the sake of comparison, the amino acid cysteine has also been subjected to the same experimental conditions. Characterization of the samples by XPS and NEXAFS shows that both pristine cystine and pristine cysteine are found as a dipolar ion (zwitterion). Following irradiation, the dimer and the amino acid show a tendency to change from the dipole ion form to the normal uncharged form. The largest spectral modification was observed in the high resolution XPS spectra obtained at around the N 1s core level for the two biomolecules. The 2p sulfur edge spectra of cysteine and cystine were much less sensitive to radiation effects. We suggest that the disulfide bond (-S-S-) remains stable before and after irradiation, contributing to the larger radiation stability of cystine as compared to the amino acid cysteine.

Generation and focusing of pulsed intense ion beams. Progress report, April 1, 1979-September 30, 1979

International Nuclear Information System (INIS)

Sudan, R.N.; Hammer, D.A.

1981-04-01

Theoretical calculations suggest that an intense pulsed approx. 1 MeV proton beam can be used to simulate the characteristics of approx. 1 GeV heavy ion beam propagation in an inertial confinement fusion reactor chamber. Given the present availability of the former beams and the high projected cost for obtaining the latter ones, such experimental simulations appear appropriate. Work was undertaken under the cited contract to apply the technology of intense proton beams to this end. The first task was the development of a high brightness pulsed proton source which could produce a weakly convergent approx. 10 kA proton beam in a field free drift region. This was accomplished at approx. 250 keV, and preliminary beam propagation experiments were performed. It was concluded that a proper simulation experiment would require a higher voltage beam. An upgraded version of the existing generator, which would have produced a 30 kA beam at about 500 keV, and further propagation experiments were proposed as part of our unsuccessful renewal proposal dated October 15, 1979

Ion-beam-induced reactions in metal-thin-film-/BP system

International Nuclear Information System (INIS)

Kobayashi, N.; Kumashiro, Y.; Revesz, P.; Mayer, J.W.

1989-01-01

Ion-beam-induced reactions in Ni thin films on BP(100) have been investigated and compared with the results of the thermal reaction. The full reaction of Ni layer with BP induced by energetic heavy ion bombardments (600 keV Xe) was observed at 200degC and the formation of the crystalline phase corresponding to a composition of Ni 4 BP was observed. Amorphous layer with the same composition was formed by the bombardments below RT. For thermally annealed samples the reaction of the Ni layer on BP started at temperatures between 350degC and 400degC and full reaction was observed at 450degC. Metal-rich ternary phase or mixed binary phase is thought to be the first crystalline phase formed both in the ion-beam-induced and in the thermally induced reactions. The crystalline phase has the same composition and X-ray diffraction pattern both for ion-beam-induced and thermal reactions. Linear dependence of the reacted thickness on the ion fluence was also observed. The authors would like to express their sincere gratitude to Jian Li and Shi-Qing Wang for X-ray diffraction measurements at Cornell University. One of the authors (N.K.) acknowledge the Agency of Science and Technology of Japan for the financial support of his stay at Cornell. We also acknowledge Dr. H. Tanoue at ETL for his help in ion bombardment experiments. (author)

Nanodevices produced with focussed ion beams

International Nuclear Information System (INIS)

Doetsch, U.; Wieck, A.D.

1998-01-01

In directly writing the 30 nm focus of a focussed Ga-ion beam (FIB) with an energy of 100 keV we define insulating lines in two-dimensional electronic layers in semiconductors. Ga ions act in GaAs and silicon as deep impurities or p-type doping, respectively. In this way the insulation by such written lines is due to lateral depletion within npn-like interfaces. In writing two FIB lines with a close spacing we define conducting channels between them. In applying a voltage of several Volts to the adjacent areas of the channel relative to it we can tune the effective width of the channel in the range of a few 100 nm to zero and obtain thus a one-dimensional field-effect-transistor-type structure. This transistor exhibits a pure lateral field effect and is thus topologically very different to current transistor concepts. Due to its particular geometry it is called in-plane-gate (IPG) transistor, since the gate and the channel are in the same plane. The fabrication of this type of transistor is thus completely maskless and does not require any alignment procedures since gate, source and drain are all written in the same writing process. Due to the computer-control of the beam deflection even more complex structures are just a question of software and do not need a set of specific masks or photoresist like in the classical lithography. The required line ion dose is of the order of 10 6 cm -1 which means that there are about 100 ions per μm implanted. For devices with maximum micron dimensions only a few hundred ions need thus to be implanted. (orig.)

Ion-beam induced structure modifications in amorphous germanium; Ionenstrahlinduzierte Strukturmodifikationen in amorphem Germanium

Energy Technology Data Exchange (ETDEWEB)

Steinbach, Tobias

2012-05-03

Object of the present thesis was the systematic study of ion-beam induced structure modifications in amorphous germanium (a-Ge) layers due to low- (LEI) and high-energetic (SHI) ion irradiation. The LEI irradiation of crystalline Ge (c-Ge) effects because the dominating nuclear scattering of the ions on the solid-state atoms the formation of a homogeneous a-Ge Layer. Directly on the surface for fluences of two orders of magnitude above the amorphization fluence the formation of stable cavities independently on the irradiation conditions was observed. For the first time for the ion-beam induced cavity formation respectively for the steady expansion of the porous layer forming with growing fluence a linear dependence on the energy {epsilon}{sub n} deposed in nuclear processes was detected. Furthermore the formation of buried cavities was observed, which shows a dependence on the type of ions. While in the c-Ge samples in the range of the high electronic energy deposition no radiation defects, cavities, or plastic deformations were observed, the high electronic energy transfer in the 3.1 {mu}m thick pre-amorphized a-Ge surface layers leads to the formation of randomly distributed cavities. Basing on the linear connection between cavity-induced vertical volume expansion and the fluence determined for different energy transfers for the first time a material-specific threshold value of {epsilon}{sub e}{sup HRF}=(10.5{+-}1.0) kev nm{sup -1} was determined, above which the ion-beam induced cavity formation in a-Ge sets on. The anisotropic plastic deformation of th a-Ge layer superposed at inclined SHI irradiation on the cavity formation was very well described by an equation derived from the viscoelastic Maxwell model, but modified under regardment of the experimental results. The positive deformation yields determined thereby exhibit above a threshold value for the ion-beam induced plastic deformation {epsilon}{sub e}{sup S{sub a}}=(12{+-}2) keV nm{sup -1} for the first

Polar cap ion beams during periods of northward IMF: Cluster statistical results

Directory of Open Access Journals (Sweden)

R. Maggiolo

2011-05-01

Full Text Available Above the polar caps and during prolonged periods of northward IMF, the Cluster satellites detect upward accelerated ion beams with energies up to a few keV. They are associated with converging electric field structures indicating that the acceleration is caused by a quasi-static field-aligned electric field that can extend to altitudes higher than 7 RE (Maggiolo et al., 2006; Teste et al., 2007. Using the AMDA science analysis service provided by the Centre de Données de la Physique des Plasmas, we have been able to extract about 200 events of accelerated upgoing ion beams above the polar caps from the Cluster database. Most of these observations are taken at altitudes lower than 7 RE and in the Northern Hemisphere. We investigate the statistical properties of these ion beams. We analyze their geometry, the properties of the plasma populations and of the electric field inside and around the beams, as well as their dependence on solar wind and IMF conditions. We show that ~40 % of the ion beams are collocated with a relatively hot and isotropic plasma population. The density and temperature of the isotropic population are highly variable but suggest that this plasma originates from the plasma sheet. The ion beam properties do not change significantly when the isotropic, hot background population is present. Furthermore, during one single polar cap crossing by Cluster it is possible to detect upgoing ion beams both with and without an accompanying isotropic component. The analysis of the variation of the IMF BZ component prior to the detection of the beams indicates that the delay between a northward/southward turning of IMF and the appearance/disappearance of the beams is respectively ~2 h and 20 min. The observed electrodynamic characteristics of high altitude polar cap ion beams suggest that they are closely connected to polar cap auroral arcs. We discuss the implications of these Cluster observations above the polar cap on the magnetospheric

Surrey Ion Beam Centre: the EPSRC MRF for ion beam applications - 01002

International Nuclear Information System (INIS)

Webb, R.P.

2016-01-01

The SIBC (Surrey Ion Beam Centre) is an element of the Virtual Ion Beam Centre that coordinates 3 U.K. experimental facilities: SIBC (University of Surrey) for implantation and ion beam applications, Miami and MEIS facility (University of Huddersfield) and gamma ray and neutron irradiation emulation facility (University of Manchester). The SIBC works actively with industry, developing bespoke processes and services, particularly for the photonics industry and provides ion beam facilities to about 20 companies across the world. It operates a stringent quality control program and is one of the few ion beam laboratories in the world to operate under ISO 9001 certification. The equipment of SIBC is presented and some applications of ion beam analysis concerning the identification of gunshot residues, the determination of the origin of a painting, the analysis of proteins are described. Different techniques such as PIXE (Particle Induced X-ray Emission), RBS (Rutherford Backscattering Spectroscopy), NRA (Nuclear Reaction Analysis), SIMS (Secondary Ion Mass Spectrometry) are also explained in the slides of the presentation that have been added at the end of the paper

Ion beam neutralization with ferroelectrically generated electron beams

Energy Technology Data Exchange (ETDEWEB)

Herleb, U; Riege, H [European Organization for Nuclear Research, Geneva (Switzerland). LHC Division

1997-12-31

A technique for ion beam space-charge neutralization with pulsed electron beams is described. The intensity of multiply-charged ions produced with a laser ion source can be enhanced or decreased separately with electron beam trains of MHz repetition rate. These are generated with ferroelectric cathodes, which are pulsed in synchronization with the laser ion source. The pulsed electron beams guide the ion beam in a similar way to the alternating gradient focusing of charged particle beams in circular accelerators such as synchrotrons. This new neutralization technology overcomes the Langmuir-Child space-charge limit and may in future allow ion beam currents to be transported with intensities by orders of magnitude higher than those which can be accelerated today in a single vacuum tube. (author). 6 figs., 10 refs.

Criticality in the fabrication of ion extraction system for SST-1 neutral beam injector

International Nuclear Information System (INIS)

Jana, M.R.; Mattoo, S.K.

2008-01-01

For the heating of plasma in steady-state superconducting tokamak (SST-1) (Y.C. Saxena, SST-1 Team, Present status of the SST-1 project, Nucl. Fusion 40 (2000) 1069-1082; D. Bora, SST-1 Team, Test results on systems developed for the SST-1 tokamak, Nucl. Fusion 43 (2003) 1748-1758), a neutral beam injector is provided to raise the ion temperature to ∼1 keV. This injector has a capability of injecting hydrogen beam with the power of 0.5 MW at 30 keV. For the upgrade of SST-1, power of 1.7 MW at 55 KeV is required. Further, beam power is to be provided for a pulse length of 1000S. We have designed a neutral beam injector (S.K. Mattoo, A.K. Chakraborty, U.K. Baruah, P.K. Jayakumar, M. Bandyopadhyay, N. Bisai, Ch. Chakrapani, M.R. Jana, R. Onali, V. Prahlad, P.J. Patel, G.B. Patel, B. Prajapati, N.V.M. Rao, S. Rambabu, C. Rotti, S.K. Sharma, S. Shah, V. Sharma, M.J. Singh, Engineering design of the steady-state neutral beam injector for SST-1, Fusion Eng. Des. 56 (2001) 685-691; A.K. Chakraborty, N. Bisai, M.R. Jana, P.K. Jayakumar, U.K. Baruah, P.J. Patel, K. Rajasekar, S.K. Mattoo, Neutral beam injector for steady-state superconducting tokamak, Fusion Technol. (1996) 657-660; P.K. Jayakumar, M.R. Jana, N. Bisai, M. Bajpai, N.P. Singh, U.K. Baruah, A.K. Chakraborty, M. Bandyopadhyay, C. Chrakrapani, D. Patel, G.B. Patel, P. Patel, V. Prahlad, N.V.M. Rao, C. Rotti, V. Sreedhar, S.K. Mattoo, Engineering issues of a 1000S neutral beam ion source, Fusion Technol. 1 (1998) 419-422) satisfying the requirements for both SST-1 and its upgrade. Since intense power is to be transported to SST-1 situated at a distance of several meters from the ion source, the optical quality of the beam becomes a primary concern. This in turn, is determined by the uniformity of the ion source plasma and the extractor geometry. To obtain the desired optical quality of the beam, stringent tolerances are to be met during the fabrication of ion extractor system. SST-1 neutral beam injector is

Study of SiO2 surface sputtering by a 250-550 keV He+ ion beam during high-resolution Rutherford backscattering measurements

International Nuclear Information System (INIS)

Kusanagi, Susumu; Kobayashi, Hajime

2006-01-01

Decreases in oxygen signal intensities in spectra of high-resolution Rutherford backscattering spectrometry (HRBS) were observed during measurements on a 5-nm thick SiO 2 layer on a Si substrate when irradiated by 250-550 keV He + ions. Shifts in an implanted arsenic profile in a 5-nm thick SiO 2 /Si substrate were also observed as a result of He + ion irradiation. These results lead to the conclusion that the SiO 2 surface was sputtered by He + ions in this energy range

Phase stability of zirconium oxide films during focused ion beam milling

Science.gov (United States)

Baxter, Felicity; Garner, Alistair; Topping, Matthew; Hulme, Helen; Preuss, Michael; Frankel, Philipp

2018-06-01

Focused ion beam (FIB) is a widely used technique for preparation of electron transparent samples and so it is vital to understand the potential for introduction of FIB-induced microstructural artefacts. The bombardment of both Xe+ and Ga+ ions is observed to cause extensive monoclinic to tetragonal phase transformation in ZrO2 corrosion films, however, this effect is diminished with reduced energy and is not observed below 5 KeV. This study emphasises the importance of careful FIB sample preparation with a low energy cleaning step, and also gives insight into the stabilisation mechanism of the tetragonal phase during oxidation.

Argon and nitrogen beams influencing membrane permeate fluxes and microbial growth

International Nuclear Information System (INIS)

Wanichapichart, P.; Taweepreeda, W.; Choomgan, P.; Yu, L.D.

2010-01-01

Porous cellulose and dense chitosan membranes were bombarded with argon and nitrogen-ion beams using two energy levels, 30 and 120 keV, of the same fluency of 5x10 14 ions/cm 2 for a comparison study. The results revealed that both beam types reduced the hydraulic permeability of the membranes. Using a NaCl solution of 4000 ppm concentration as feed, the ability to reject salt of dense chitosan membrane was reduced only if it was pretreated with 120 keV nitrogen-ion beams. A Fourier Transform Infrared Spectroscopy study showed that molecular weight of chitosan was possibly decreased after the bombardment with 120 keV beams. The analysis of the cellulose membranes revealed that a dense structure was created without affecting the OH functional groups. This study found that only chitosan membranes possessed an anti-fungi property if being implanted with positive charges of nitrogen or argon ions of 120 keV.

Electron Beam Ion Sources

CERN Document Server

Zschornacka, G.; Thorn, A.

2013-12-16

Electron beam ion sources (EBISs) are ion sources that work based on the principle of electron impact ionization, allowing the production of very highly charged ions. The ions produced can be extracted as a DC ion beam as well as ion pulses of different time structures. In comparison to most of the other known ion sources, EBISs feature ion beams with very good beam emittances and a low energy spread. Furthermore, EBISs are excellent sources of photons (X-rays, ultraviolet, extreme ultraviolet, visible light) from highly charged ions. This chapter gives an overview of EBIS physics, the principle of operation, and the known technical solutions. Using examples, the performance of EBISs as well as their applications in various fields of basic research, technology and medicine are discussed.

Ion beam diagnosis

International Nuclear Information System (INIS)

Strehl, P.

1994-04-01

This report is an introduction to ion beam diagnosis. After a short description of the most important ion beam parameters measurements of the beam current by means of Faraday cups, calorimetry, and beam current transformers and measurements of the beam profile by means of viewing screens, profile grids and scanning devices, and residual gas ionization monitors are described. Finally measurements in the transverse and longitudinal phase space are considered. (HSI)

Triple ion-beam studies of radiation damage in 9Cr2WVTa ferritic/martensitic steel

International Nuclear Information System (INIS)

Lee, E.H.; Hunn, J.D.; Rao, G.R.; Klueh, R.L.; Mansur, L.K.

1997-01-01

To simulate radiation damage under a future Spallation Neutron Source (SNS) environment, irradiation experiments were conducted on a candidate 9Cr-2WVTa ferritic/martensitic steel using the Triple Ion Facility (TIF) at ORNL. Irradiation was conducted in single, dual, and triple ion beam modes using 3.5 MeV Fe ++ , 360 keV He + , and 180 keV H + at 80, 200, and 350 degrees C. These irradiations produced various defects comprising black dots, dislocation loops, line dislocations, and gas bubbles, which led to hardening. The largest increase in hardness, over 63 %, was observed after 50 dpa for triple beam irradiation conditions, revealing that both He and H are augmenting the hardening. Hardness increased less than 30 % after 30 dpa at 200 degrees C by triple beams, compatible with neutron irradiation data from previous work which showed about a 30 % increase in yield strength after 27.2 dpa at 365 degrees C. However, the very large concentrations of gas bubbles in the matrix and on lath and grain boundaries after these simulated SNS irradiations make predictions of fracture behavior from fission reactor irradiations to spallation target conditions inadvisable

Development of the High Current Ion Source for Neutral Beam Injection

Energy Technology Data Exchange (ETDEWEB)

Lee, Hun Ju; Kim, S. H.; Jang, D. H. [Jae Ju University, Jaeju (Korea, Republic of)

1997-08-01

The scope of the 1st year research is to design an 140keV deuterium ion source which has a beam current of 30-40A. According to the collected data, the model of an ion source for NBI of KSTAR was established. The negative ion source, which has good neutralization effecting in high energy, was selected. To generate a plasma, the thoriated tungsten filament was adopted. To increase the efficiency of plasma, the multi cusp type magnetic field was attached. The magnetic field was calculated by POISSON code. The extraction structure was designed with EGUN code, to extract the high quality ion beam. The design of a high current ion source for NBI was carried out. To develop the high current ion source with the high operational stability and the long lifetime, the parameters including an arc current, gas pressure and extraction voltage should be optimized. If designed ion source would be fabricated, its parameters could be optimized experimentally. Through the optimization of the ion source parameter, the core technology for NBI is established and the experiment of current drive in the fusion device can be performed. This technology also can be applied to the synthesis of new material and semiconductor industry. 18 refs., 11 tabs., 19 figs. (author)

Retention of neon in graphite after ion beam implantation or exposures to the scrape-off layer plasma in the TEXTOR tokamak

International Nuclear Information System (INIS)

Kim, Y.M.; Philipps, V.; Rubel, M.; Vietzke, E.; Pospieszczyk, A.; Unterberg, B.; Jaspers, R.

2002-01-01

The interaction of neon ions with graphite was investigated for targets either irradiated with ion beams (2-10 keV range) or exposed to the scrape-off layer plasma in the TEXTOR tokamak during discharges with neon edge cooling. The emphasis was on the influence of the target temperature (300-1200 K) and the implantation dose on the neon retention and reemission. The influence of deuterium impact on the retention of neon implanted into graphite has also been addressed. In ion beam experiments saturation is observed above a certain ion dose with a saturation level, which decreases with increasing target temperature. The temperature dependence of the thermal desorption corresponds to an apparent binding energy of about 2.06 eV. The retention of neon (C Ne /C C ) decreases with increasing ion energy with values from 0.55 to 0.15 following irradiation with 2 and 10 keV ions, respectively. The reemission yield during the irradiation increases with target temperature and above 1200 K all impinging ions are reemitted instantaneously. The retention densities measured using the sniffer probe at the TEXTOR tokamak are less than 1% of the total neon fluence and are over one order of magnitude smaller than those observed in ion beam experiments. The results are discussed in terms of different process decisive for ion deposition and release under the two experimental conditions

Transport channel of secondary ion beam of experimental setup for selective laser ionization with gas cell GALS

Science.gov (United States)

Gulbekyan, G. G.; Zemlyanoy, S. G.; Bashevoy, V. V.; Ivanenko, I. A.; Kazarinov, N. Yu; Kazacha, V. I.; Osipov, N. F.

2017-07-01

GALS is the experimental setup intended for production and research of isobaric and isotopically pure heavy neutron-rich nuclei. The beam line consists of two parts. The initial part is used for transport of the primary 136Xe ion beam with the energy of 4.5-9.0 MeV/amu from the FLNR cyclotron U-400M to the Pb target for production of the studying ion beams. These beams have the following design parameters: the charge Z = +1, the mass A = 180-270 and the kinetic energy W = 40 keV. The second part placed after the target consists of the SPIG (QPIG) system, the accelerating gap, the electrostatic Einzel lens, 90-degree spectrometric magnet (calculated value of the mass-resolution is equal to 1400) and the beam line for the transportation of the ions from the magnet focal plane to a particle detector. The results of simulation of the particle dynamics and the basic parameters of all elements of the beam line are presented.

Self-Assembled Gold Nano-Ripple Formation by Gas Cluster Ion Beam Bombardment.

Science.gov (United States)

Tilakaratne, Buddhi P; Chen, Quark Y; Chu, Wei-Kan

2017-09-08

In this study, we used a 30 keV argon cluster ion beam bombardment to investigate the dynamic processes during nano-ripple formation on gold surfaces. Atomic force microscope analysis shows that the gold surface has maximum roughness at an incident angle of 60° from the surface normal; moreover, at this angle, and for an applied fluence of 3 × 10 16 clusters/cm², the aspect ratio of the nano-ripple pattern is in the range of ~50%. Rutherford backscattering spectrometry analysis reveals a formation of a surface gradient due to prolonged gas cluster ion bombardment, although the surface roughness remains consistent throughout the bombarded surface area. As a result, significant mass redistribution is triggered by gas cluster ion beam bombardment at room temperature. Where mass redistribution is responsible for nano-ripple formation, the surface erosion process refines the formed nano-ripple structures.

Compact 80-keV neutral-beam module

International Nuclear Information System (INIS)

Molvik, A.W.; Baird, E.D.; Berkner, K.H.; Cooper, W.S.; Duffy, T.J.; Ehlers, K.W.; Fink, J.; Garner, D.; Wilder, C.

1977-01-01

A compact and maintainable source of 80-keV neutral beams that focus to a high power density is required for the Mirror Fusion Test Facility (MFTF). In the new source being designed and built to meet these requirements, the cross-sectional area is reduced in two ways: by immersing the source in a vacuum where high voltage can be held over smaller distances and by redesigning grid supporting structures. Reliability is increased by reducing the electric fields everywhere else below those present between grids and by design innovations. The latter include techniques to reduce stray magnetic field and disperse gas uniformly, all metal-ceramic construction, and a 60-kV shield enclosing all 80-kV electrodes. Wherever possible, we have attempted to simplify the construction. We expect to solve problems that arise during testing either with add-on fixes or with the techniques already tested successfully on the Lawrence Berkeley Laboratory (LBL) 120-keV source. Easy maintenance is obtained by a compact isolation valve and by modular construction. Curving both the grid wires and their holders provides focusing in two planes

Beam-plasma instability in ion beam systems used in neutral beam generation

International Nuclear Information System (INIS)

Hooper, E.B. Jr.

1977-02-01

The beam-plasma instability is analyzed for the ion beams used for neutral beam generation. Both positive and negative ion beams are considered. Stability is predicted when the beam velocity is less than the electron thermal velocity; the only exception occurs when the electron density accompanying a negative ion beam is less than the ion density by nearly the ratio of electron to ion masses. For cases in which the beam velocity is greater than the electron thermal velocity, instability is predicted near the electron plasma frequency

Surface wet-ability modification of thin PECVD silicon nitride layers by 40 keV argon ion treatments

Science.gov (United States)

Caridi, F.; Picciotto, A.; Vanzetti, L.; Iacob, E.; Scolaro, C.

2015-10-01

Measurements of wet-ability of liquid drops have been performed on a 30 nm silicon nitride (Si3N4) film deposited by a PECVD reactor on a silicon wafer and implanted by 40 keV argon ions at different doses. Surface treatments by using Ar ion beams have been employed to modify the wet-ability. The chemical composition of the first Si3N4 monolayer was investigated by means of X-ray Photoelectron Spectroscopy (XPS). The surface morphology was tested by Atomic Force Microscopy (AFM). Results put in evidence the best implantation conditions for silicon nitride to increase or to reduce the wet-ability of the biological liquid. This permits to improve the biocompatibility and functionality of Si3N4. In particular experimental results show that argon ion bombardment increases the contact angle, enhances the oxygen content and increases the surface roughness.

Molecular carbon nitride ion beams for enhanced corrosion resistance of stainless steel

Science.gov (United States)

Markwitz, A.; Kennedy, J.

2017-10-01

A novel approach is presented for molecular carbon nitride beams to coat stainless surfaces steel using conventional safe feeder gases and electrically conductive sputter targets for surface engineering with ion implantation technology. GNS Science's Penning type ion sources take advantage of the breaking up of ion species in the plasma to assemble novel combinations of ion species. To test this phenomenon for carbon nitride, mixtures of gases and sputter targets were used to probe for CN+ ions for simultaneous implantation into stainless steel. Results from mass analysed ion beams show that CN+ and a variety of other ion species such as CNH+ can be produced successfully. Preliminary measurements show that the corrosion resistance of stainless steel surfaces increased sharply when implanting CN+ at 30 keV compared to reference samples, which is interesting from an application point of view in which improved corrosion resistance, surface engineering and short processing time of stainless steel is required. The results are also interesting for novel research in carbon-based mesoporous materials for energy storage applications and as electrode materials for electrochemical capacitors, because of their high surface area, electrical conductivity, chemical stability and low cost.

Ion beam induced surface graphitization of CVD diamond for x-ray beam position monitor applications

International Nuclear Information System (INIS)

Liu, Chian; Shu, D.; Kuzay, T.M.; Wen, L.; Melendres, C.A.; Argonne National Lab., IL

1996-01-01

The Advanced Photon Source at ANL is a third-generation synchrotron facility that generates powerful x-ray beams on its undulator beamlines. It is important to know the position and angle of the x- ray beam during experiments. Due to very high heat flux levels, several patented x-ray beam position monitors (XBPM) exploiting chemical vapor deposition (CVD) diamond have been developed. These XBPMs have a thin layer of low-atomic-mass metallic coating so that photoemission from the x rays generate a minute but measurable current for position determination. Graphitization of the CVD diamond surface creates a very thin, intrinsic and conducting layer that can stand much higher temperatures and minimal x-ray transmission losses compared to the coated metallic layers. In this paper, a laboratory sputter ion source was used to transform selected surfaces of a CVD diamond substrate into graphite. The effect of 1-5 keV argon ion bombardment on CVD diamond surfaces at various target temperatures from 200 to 500 C was studied using Auger electron spectroscopy and in-situ electrical resistivity measurements. Graphitization after the ion bombardment has been confirmed and optimum conditions for graphitization studied. Raman spectroscopy was used to identify the overall diamond structure in the bulk of CVD diamond substrate after the ion bombardments. It was found that target temperature plays an important role in stability and electrical conductivity of the irradiated CVD diamonds

Induction of antioxidant enzyme activity and lipid peroxidation level in ion-beam-bombarded rice seeds

Science.gov (United States)

Semsang, Nuananong; Yu, LiangDeng

2013-07-01

Low-energy ion beam bombardment has been used to mutate a wide variety of plant species. To explore the indirect effects of low-energy ion beam on biological damage due to the free radical production in plant cells, the increase in antioxidant enzyme activities and lipid peroxidation level was investigated in ion-bombarded rice seeds. Local rice seeds were bombarded with nitrogen or argon ion beams at energies of 29-60 keV and ion fluences of 1 × 1016 ions cm-2. The activities of the antioxidant enzymes; superoxide dismutase (SOD), catalase (CAT), ascorbate peroxidase (APX), dehydroascorbate reductase (DHAR), glutathione reductase (GR), glutathione S-transferase (GST) and lipid peroxidation level were assayed in the germinated rice seeds after ion bombardment. The results showed most of the enzyme activities and lipid peroxidation levels in both the argon and nitrogen bombarded samples were higher than those in the natural control. N-ion bombardment could induce higher levels of antioxidant enzyme activities in the rice samples than the Ar-ion bombardment. Additional effects due to the vacuum condition were found to affect activities of some antioxidant enzymes and lipid peroxidation level. This study demonstrates that ion beam bombardment and vacuum condition could induce the antioxidant enzyme activity and lipid peroxidation level which might be due to free radical production in the bombarded rice seeds.

The XRS microcalorimeter spectrometer at the Livermore Electron Beam Ion Trap

Energy Technology Data Exchange (ETDEWEB)

Porter, F S; Beiersdorfer, P; Boyce, K; Brown, G V; Chen, H; Gygax, J; Kahn, S M; Kelley, R; Kilbourne, C A; Magee, E; Thorn, D B

2007-08-22

NASA's X-ray Spectrometer (XRS) microcalorimeter instrument has been operating at the Electron Beam Ion Trap (EBIT) facility at Lawrence Livermore National Laboratory since July of 2000. The spectrometer is currently undergoing its third major upgrade to become an easy to use, extremely high performance instrument for a broad range of EBIT experiments. The spectrometer itself is broadband, capable of simultaneously operating from 0.1 to 12 keV and has been operated at up to 100 keV by manipulating its operating conditions. The spectral resolution closely follows the spaceflight version of the XRS, beginning at 10 eV FWHM at 6 keV in 2000, upgraded to 5.5 eV in 2003, and will hopefully be {approx}3.8 eV in the Fall of 2007. Here we review the operating principles of this unique instrument, the extraordinary science that has been performed at EBIT over the last 6 years, and prospects for future upgrades. Specifically we discuss upgrades to cover the high-energy band (to at least 100 keV) with a high quantum efficiency detector, and prospects for using a new superconducting detector to reach 0.8 eV resolution at 1 keV, and 2 eV at 6 keV with high counting rates.

Characterization and modification of the interface of superconducting Nb/Cu cavities by ion beams

International Nuclear Information System (INIS)

El Bouanani, M.

1990-05-01

Radiofrequency superconducting Nb/Cu cavities for electron beam acceleration are studied in a collaboration between CEA and IN2P3 (CNRS). The quality of superconducting cavity is closely related to the purity of the surface material. In such an aim, carbon and oxygen contaminations at the surface and at the interface of the Nb/Cu device has been measured. Since the niobium film is deposited on copper by magnetron sputtering under argon atmosphere, argon analysis is performed using the resonance in the nuclear reaction Ar 40 (p,γ) 41 K at the proton energy of 1102 keV. In order to simulate the energy deposition occurring during particle acceleration, Nb/Cu samples have been irradiated with a 600 keV argon beam. The element distribution evolution is then followed by RBS and NBS. Ion beam mixing effect in the case of samples with oxygen interface contamination (Nb/Nb + Ox + Cu/Cu) is shown to be enhanced [fr

Biomaterials modification by ion beam

International Nuclear Information System (INIS)

Zhang Tonghe; Yi Zhongzhen; Zhang Xu; Wu Yuguang

2001-01-01

Ion beam technology is one of best ways for the modification of biomaterials. The results of ion beam modification of biomaterials are given. The method and results of improved biocompatibility are indicated by ion beam technology. The future development of ion beam modification of biomaterials is discussed

Manufacturing of the full size prototype of the ion source for the ITER neutral beam injector – The SPIDER beam source

Energy Technology Data Exchange (ETDEWEB)

Pavei, Mauro, E-mail: mauro.pavei@igi.cnr.it [Consorzio RFX, C.so Stati Uniti 4, I-35127, Padova (Italy); Boilson, Deirdre [ITER Organization, Route de Vinon-sur-Verdon, CS 90 046, 13067 St. Paul Lez Durance Cedex (France); Bonicelli, Tullio [Fusion for Energy, C/Joseph Pla 2, 08019 Barcelona (Spain); Boury, Jacques [Thales Electron Devices, Velizy Villacoublay (France); Bush, Michael [Galvano-T GmbH, T, Raiffeisenstraße 8, 51570 Windeck (Germany); Ceracchi, Andrea; Faso, Diego [CECOM S.r.l., Via Tiburtina – Guidonia Montecelio, Roma (Italy); Graceffa, Joseph [ITER Organization, Route de Vinon-sur-Verdon, CS 90 046, 13067 St. Paul Lez Durance Cedex (France); Heinemann, Bernd [Max-Planck-Institut für Plasmaphysik, D-85740 Garching (Germany); Hemsworth, Ronald [ITER Organization, Route de Vinon-sur-Verdon, CS 90 046, 13067 St. Paul Lez Durance Cedex (France); Lievin, Christophe [Thales Electron Devices, Velizy Villacoublay (France); Marcuzzi, Diego [Consorzio RFX, C.so Stati Uniti 4, I-35127, Padova (Italy); Masiello, Antonio [Fusion for Energy, C/Joseph Pla 2, 08019 Barcelona (Spain); Sczepaniak, Bernd [Galvano-T GmbH, T, Raiffeisenstraße 8, 51570 Windeck (Germany); Singh, Mahendrajit [ITER Organization, Route de Vinon-sur-Verdon, CS 90 046, 13067 St. Paul Lez Durance Cedex (France); Toigo, Vanni; Zaccaria, Pierluigi [Consorzio RFX, C.so Stati Uniti 4, I-35127, Padova (Italy)

2015-10-15

Highlights: • Negative ion sources are key components of neutral beam injectors for nuclear fusion. • The SPIDER experiment aims to optimize the negative ion source of MITICA and HNB. • The SPIDER Beam Source manufacturing is currently on-going. • Manufacturing and assembling technological issues encountered are presented. - Abstract: In ITER, each heating neutral beam injector (HNB) will deliver about 16.5 MW heating power by accelerating a 40 A deuterium negative ion beam up to the energy of 1 MeV. The ions are generated inside a caesiated negative ion source, where the injected H{sub 2}/D{sub 2} is ionized by a radio frequency electromagnetic field. The SPIDER test bed, currently being manufactured, is going to be the ion source test facility for the full size ion source of the HNBs and of the diagnostic neutral beam injector of ITER. The SPIDER beam source comprises an ion source with 8 radio-frequency drivers and a three-grid system, providing an overall acceleration up to energies of about 100 keV [1]. SPIDER represents a substantial step forward between the half ITER size ion source, which is currently being tested at the ELISE test bed in IPP-Garching, and the negative ion sources to be used on ITER, in terms of layout, dimensions and operating parameters. The SPIDER beam source will be housed inside a vacuum vessel which will be equipped with a beam dump and a graphite diagnostic calorimeter. The manufacturing design of the main parts of the SPIDER beam source has been completed and many of the tests on the prototypes have been successfully passed. The most complex parts, from the manufacturing point of view, of the ion source and the accelerator, developed by galvanic deposition of copper are being manufactured. The manufacturing phase will be completed within 2015, when the assembly of the device will start at the PRIMA site, in Padova (I). The paper describes the status of the procurement, the adaptations operated on the design of the beam

Ion beam synthesis and characterization of metastable group-IV alloy semiconductors

Energy Technology Data Exchange (ETDEWEB)

Kobayashi, Naoto; Hasegawa, Masataka; Hayashi, Nobuyuki; Makita, Yunosuke; Shibata, Hajime [Electrotechnical Lab., Tsukuba, Ibaraki (Japan); Katsumata, Hiroshi; Uekusa, Shin-ichiro

1997-03-01

New Group-IV metastable alloy semiconductors and their heterostructures based on combinations of C-Si-Ge-Sn are recently attracting interest because of feasible new electronic and optoelectronic application in Si-technology and here research works on synthesis and characterization of the epitaxial heterostructures of Si-C, Si-Sn on Si fabricated by ion implantation together either with ion-beam-induced epitaxial crystallization (IBIEC) or solid phase epitaxial growth (SPEG) have been investigated. Formations of layers of Si{sub 1-y}C{sub y} (y=0.014 at peak concentration) on Si(100) have been performed by high-dose implantation of 17 keV C ions and successive IBIEC with 400 keV Ar or Ge ion bombardments at 300-400degC or SPEG up to 750degC. Crystalline growth by IBIEC has shown a lower growth rate in Si{sub 1-y}C{sub y}/Si than in intrinsic Si due mainly to the strain existence, which was observed by the X-ray diffraction (XRD) measurements. Photoluminescence(PL) measurements have revealed I{sub 1} or G line emissions that are relevant to small vacancy clusters or C pair formation, respectively. The crystalline growth of Si{sub 1-z}Sn{sub z} layers by 110 keV {sup 120}Sn ion implantation (z=0.029 and z=0.058 at peak concentration) into Si(100) followed either by IBIEC or by SPEG has been also investigated. PL emission from both IBIEC-grown and SPEG-grown samples with the lower Sn concentration has shown similar peaks to those by ion-implanted and annealed Si samples with intense I{sub 1} or I{sub 1}-related (Ar) peaks. Present results suggest that IBIEC has a feature for the non-thermal equilibrium fabrication of Si-C and Si-Sn alloy semiconductors. (J.P.N.)

Development and testing of an ion probe for tightly-bunched particle beams

Energy Technology Data Exchange (ETDEWEB)

Ngo, M.; Pasour, J.

1996-06-01

Many high-energy physics experiments require a high-quality and well-diagnosed charged-particle beam (CPB). Precise knowledge of beam size, position, and charge distribution is often crucial to the success of the experiment. It is also important in many applications that the diagnostic used to determine the beam parameters be nonintercepting and nonperturbing. This requirement rules out many diagnostics, such as wire scanners, thin foils which produce Cerenkov or transition radiation, and even some rf cavity diagnostics. Particularly difficult to diagnose are tightly-focused (r{sub b} << 1 mm), short-duration (psec) beams, such as those in state-of-the-art or next-generation particle colliders. In this paper we describe an ion probe that is capable of penetrating the space-charge field of densely bunched CPBs without perturbation, thereby enabling the measurement of the microstructure of the bunch. This diagnostic probe uses a finely-focused stream of ions to interact with the CPB. Related techniques have been discussed in the literature. In fact, the present work evolved from an electron deflection diagnostic for CPBs that we previously described. A similar electron probe was tested even earlier at TRIUMF and in the Former Soviet Union. Electron probes have also been used to measure plasma sheaths and potentials and the neutralization of heavy ion beams. Also, Mendel has used an ion beam (22 keV He{sup +}) to probe rapidly varying fields in plasmas. The probe ions are injected across the beam tube and into the path of the high-energy CPB. The ions are deflected by the CPB, and the direction and magnitude of the deflection are directly related to the spatial and temporal charge distribution of the CPB. Easily-resolved deflections can be produced by microbunches having total charge on the order of a nCoul and pulse durations of a few psec. The deflected ions are monitored with a suitable detector, in this case a microchannel plate capable of detecting single ions.

Irradiation effects of Ar cluster ion beams on Si substrates

International Nuclear Information System (INIS)

Ishii, Masahiro; Sugahara, Gaku; Takaoka, G.H.; Yamada, Isao

1993-01-01

Gas-cluster ion beams can be applied to new surface modification techniques such as surface cleaning, low damage sputtering and shallow junction formation. The effects of energetic Ar cluster impacts on solid surface were studied for cluster energies of 10-30keV. Irradiation effects were studied by RBS. For Si(111) substrates, irradiated with Ar ≥500 clusters to a dose of 1x10 15 ion/cm 2 at acceleration voltage 15kV, 2x10 14 atoms/cm 2 implanted Ar atoms were detected. In this case, the energy per cluster atom was smaller than 30eV; at this energy, no significant implantation occurs in the case of monomer ions. Ar cluster implantation into Si substrates occurred due to the high energy density irradiation. (author)

Formation of hexagonal silicon carbide by high energy ion beam irradiation on Si (1 0 0) substrate

International Nuclear Information System (INIS)

Bhuyan, H; Favre, M; Valderrama, E; Avaria, G; Chuaqui, H; Mitchell, I; Wyndham, E; Saavedra, R; Paulraj, M

2007-01-01

We report the investigation of high energy ion beam irradiation on Si (1 0 0) substrates at room temperature using a low energy plasma focus (PF) device operating in methane gas. The unexposed and ion exposed substrates were characterized by x-ray diffraction, scanning electron microscopy (SEM), photothermal beam deflection, energy-dispersive x-ray analysis and atomic force microscopy (AFM) and the results are reported. The interaction of the pulsed PF ion beams, with characteristic energy in the 60-450 keV range, with the Si surface, results in the formation of a surface layer of hexagonal silicon carbide. The SEM and AFM analyses indicate clear step bunching on the silicon carbide surface with an average step height of 50 nm and a terrace width of 800 nm

Study of plasma confinement in ELMO Bumpy Torus with a heavy-ion beam probe

Energy Technology Data Exchange (ETDEWEB)

Bieniosek, F. M.

1981-01-01

Plasma confinement in ELMO Bumpy Torus (EBT) is generally strongly dependent on an ambipolar electric field. Spatially resolved measurements of the resulting electric space potential phi/sub sp/ have been made in a single plasma cross section by the heavy-ion beam probe. This diagnostic injects a 4-60-keV beam of (usually) Cs/sup +/ ions into the plasma. Measurement of the energy of Cs/sup 2 +/ secondary ions leaving the plasma gives a continuous monitor of the local space potential. In addition, the total detected Cs/sup 2 +/ ion current is proportional to the product of the local electron density and the ionization rate, which, in turn, is a function of the electron temperature. This signal, nf(T/sub e/), is sensitive to all three electron distributions found in EBT - those of the cold surface plasma, the warm core plasma, and the hot electron ring.

Study of plasma confinement in ELMO Bumpy Torus with a heavy-ion beam probe

International Nuclear Information System (INIS)

Bieniosek, F.M.

1981-01-01

Plasma confinement in ELMO Bumpy Torus (EBT) is generally strongly dependent on an ambipolar electric field. Spatially resolved measurements of the resulting electric space potential phi/sub sp/ have been made in a single plasma cross section by the heavy-ion beam probe. This diagnostic injects a 4-60-keV beam of (usually) Cs + ions into the plasma. Measurement of the energy of Cs 2+ secondary ions leaving the plasma gives a continuous monitor of the local space potential. In addition, the total detected Cs 2+ ion current is proportional to the product of the local electron density and the ionization rate, which, in turn, is a function of the electron temperature. This signal, nf(T/sub e/), is sensitive to all three electron distributions found in EBT - those of the cold surface plasma, the warm core plasma, and the hot electron ring

Reaching for highest ion beam intensities through laser ion acceleration and beam compression

Energy Technology Data Exchange (ETDEWEB)

Schumacher, Dennis; Brabetz, Christian; Blazevic, Abel; Bagnoud, Vincent; Weih, Simon [GSI Helmholtzzentrum fuer Schwerionenforschung (Germany); Jahn, Diana; Ding, Johannes; Roth, Markus [TU Darmstadt (Germany); Kroll, Florian; Schramm, Ulrich; Cowan, Tom [Helmholtzzentrum Dresden Rossendorf (Germany); Collaboration: LIGHT-Collaboration

2016-07-01

Laser ion acceleration provides access to ion sources with unique properties. To use these capabilities the LIGHT collaboration (Laser Ion Generation Handling and Transport) was founded. The aim of this collaboration is the beam transport and manipulation of laser accelerated ions with conventional accelerator structures. Therefor a dedicated beam line has been build up at GSI Helmholtzzentrum fuer Schwerionenforschung. With this beam line the manipulation of the transversal and also the longitudinal beam parameters has been achieved. It has been shown that laser generated ion beams can be transported over more than 6 meters and pulses shorter than 300 ps can be generated at this distance. This Talk will give an overview over the recent developments and plans of the LIGHT collaboration.

Improved beam extraction for a negative hydrogen ion source for the LHC injector chain upgrade, Linac4

CERN Document Server

Midttun, Øystein; Scrivens, Richard

In the scope of an upgrade of the injector chain of CERN’s accelerator complex, a new linear accelerator, Linac4, is under construction. This accelerator will replace the existing 50 MeV proton linac, Linac2. By increasing the beam energy to 160 MeV, Linac4 makes it possible to double the brightness in the PSB, and ultimately increase the luminosity in the LHC. Linac4 will accelerate beams of negative hydrogen (H-) to be injected into the PSB by multi-turn, charge exchange injection. The ion source was initially based on the non-caesiated RF-volume source from DESY. However, the beam extraction from this source could not handle the 45 keV beam energy required by the RFQ. A new beam extraction system has therefore been designed, via IBSimu simulations [1], to extract and transport the H- ion beam respecting the Linac4 requirements. Key features of the extraction system is a tuneable puller voltage to adapt the extraction field to the ion and electron beam currents, and a magnetized Einzel lens to dump the co...

Energy reflection coefficient for H+ ions at energies between 10 and 80 keV

International Nuclear Information System (INIS)

Chen, C.K.; Bohdansky, J.; Eckstein, W.; Robinson, M.T.

1984-04-01

The energy reflection coefficient for H + ions at energies between 10 keV and 80 keV was determined by experiments and by computer calculations. Measurements were made with graphite, Al, Cu, Mo and W. targets. The angle of ion incidence was restricted to 85 0 , 78 0 and 70 0 measured from the surface normal. Calculated data were obtained by two different Monte Carlo computer programs (MARLOWE, TRIM). It was found that both the calculated and the measured data scale with the parameter epsilon cos 2 α, where epsilon is Lindhard's reduced energy and α the angle of incidence for the ions. The measured values are smaller than those calculated. This can be explained by surface roughness which developed during the ion irradiation

Construction, characterization and applications of a compact mass-resolved low-energy ion beam system

International Nuclear Information System (INIS)

Lau, W.M.; Feng, X.; Bello, I.; Sant, S.; Foo, K.K.; Lawson, R.P.W.

1991-01-01

A compact mass-resolved low-energy ion beam system has been constructed in which ions are extracted from a Colutron ion source, focused by an einzel lens, mass-selected by a Wien filter, refocused by a second einzel lens into an ultrahigh vacuum target chamber, and finally decelerated with a five-electrode lens. The design of the deceleration lens was assisted by computer simulation including space-charge effects with an ion trajectory software (CHDEN). The system performance has been characterized with a quadrupole mass spectrometer and an energy analyzer along the beam axis. For example, argon ions can be transported at keV and decelerated to 10 eV with an energy spread of ±0.5 eV. The total current measured by a Faraday cage at the exit of the deceleration lens in the energy range of 10-200 eV is about 1-5 μA. The ion current density was higher than 100 μA/cm 2 at 50 eV but decreased to 10-20 μA/cm 2 at 10 eV. The mass resolution was estimated to be 40 under the present operation configuration. The system has been used to produce interesting results in both ion beam etching and deposition. (orig.)

Modifications resulting in significant increases in the beam usage time of a 60 keV electron beam welder

International Nuclear Information System (INIS)

Zielinski, R.E.; Harrison, J.L.

1976-01-01

Short beam usage times were encountered using a 60 keV electron beam welder. These short times were the direct result of a buildup of a reaction product (WO 2 . 90 ) that occurred on graphite washers which housed the tungsten emitter plate. While it was not possible to prevent the reaction product, its growth rate was sufficiently altered by changing graphite materials and minor design changes of the washers. With these modifications beam usage times increased from an original 40 min to approximately 675 min

Ion-beam mixed ultra-thin cobalt suicide (CoSi2) films by cobalt sputtering and rapid thermal annealing

Science.gov (United States)

Kal, S.; Kasko, I.; Ryssel, H.

1995-10-01

The influence of ion-beam mixing on ultra-thin cobalt silicide (CoSi2) formation was investigated by characterizing the ion-beam mixed and unmixed CoSi2 films. A Ge+ ion-implantation through the Co film prior to silicidation causes an interface mixing of the cobalt film with the silicon substrate and results in improved silicide-to-silicon interface roughness. Rapid thermal annealing was used to form Ge+ ion mixed and unmixed thin CoSi2 layer from 10 nm sputter deposited Co film. The silicide films were characterized by secondary neutral mass spectroscopy, x-ray diffraction, tunneling electron microscopy (TEM), Rutherford backscattering, and sheet resistance measurements. The experi-mental results indicate that the final rapid thermal annealing temperature should not exceed 800°C for thin (micrographs of the ion-beam mixed and unmixed CoSi2 films reveals that Ge+ ion mixing (45 keV, 1 × 1015 cm-2) produces homogeneous silicide with smooth silicide-to-silicon interface.

Beam brilliance investigation of high current ion beams at GSI heavy ion accelerator facility.

Science.gov (United States)

Adonin, A A; Hollinger, R

2014-02-01

In this work the emittance measurements of high current Ta-beam provided by VARIS (Vacuum Arc Ion Source) ion source are presented. Beam brilliance as a function of beam aperture at various extraction conditions is investigated. Influence of electrostatic ion beam compression in post acceleration gap on the beam quality is discussed. Use of different extraction systems (single aperture, 7 holes, and 13 holes) in order to achieve more peaked beam core is considered. The possible ways to increase the beam brilliance are discussed.

Radiation vulcanization of natural rubber latex using 250 keV electron beam machine

Energy Technology Data Exchange (ETDEWEB)

Chirinos, H.; Yoshii, F.; Makuuchi, K.; Lugao, A. E-mail: ablugao@net.ipen.br

2003-08-01

The sensitized radiation vulcanization of natural rubber latex has been carried out with 250 keV electrons. Latex was irradiated over a range of the beam current from 5 to 20 mA in the presence of sensitizers like the n-butyl acrylate (n-BA). The vulcanization dose decreases with increasing beam current condition. The rate of vulcanization (R{sub vul}) depends on the beam current (I) as given by the equation R{sub vul}=kI{sup 0.6}.

A fast beam-ion instability

Energy Technology Data Exchange (ETDEWEB)

Stupakov, G V [Stanford Linear Accelerator Center, Menlo Park, CA (United States)

1996-08-01

The ionization of residual gas by an electron beam in an accelerator generates ions that can resonantly couple to the beam through a wave propagating in the beam-ion system. Results of the study of a beam-ion instability are presented for a multi-bunch train taking into account the decoherence of ion oscillations due to the ion frequency spread and spatial variation of the ion frequency. It is shown that the combination of both effects can substantially reduce the growth rate of the instability. (author)

Tuning of wettability of PANI-GNP composites using keV energy ions

Energy Technology Data Exchange (ETDEWEB)

Lakshmi, G.B.V.S., E-mail: lakshmigbvs@gmail.com [Inter University Accelerator Centre, New Delhi 67 (India); Avasthi, D.K. [Amity University, Noida 201313, Uttar Pradesh (India)

2016-07-15

Polyaniline nanofiber composites with various nanomaterials have several applications in electrochemical biosensors. The surface properties of these composites coated electrodes play crucial role in enzyme absorption and analyte detection process. In the present study, Polyaniline-Graphene nanopowder (PANI-GNP) composites were prepared by rapid-mixing polymerization method. The films were prepared on ITO coated glass substrates and irradiated with 42 keV He{sup +} ions produced by indigenously fabricated accelerator at IUAC, New Delhi. The films were characterized before and after irradiation by SEM, Raman spectroscopy and contact angle measurements. The as-prepared films show superhydrophilic nature and after irradiation the films show highly hydrophobic nature with water contact angle (135°). The surface morphology was studied by SEM and structural changes were studied by Raman spectra. The surface morphological modifications induced by keV energy ions helps in tuning the wettability at different ion fluences.

Vacancy-type defects and their annealing processes in ion-implanted Si studied by a variable-energy positron beam

International Nuclear Information System (INIS)

Uedono, A.; Wei, L.; Tanigawa, S.; Sugiura, J.; Ogasawara, M.

1992-01-01

Vacancy-type defects in B + -, P + - and Si + -ion implanted SiO 2 (43 nm)/Si(100) and Si(100) were studied by a variable-energy positron beam. Depth distributions of vacancy-type defects were obtained from measurements of Doppler broadening profiles of the positron annihilation as a function of incident positron energy. For 200-keV P + -implanted specimen with a dose of 5 x 10 13 P/cm 2 , the damaged layers induced by ion-implantation were found to extend far beyond the stopping range of P-atoms. For 80-keV B + -implanted SiO 2 (43 nm)/Si(100) specimens with different ion-currents, an increase of the ion-current introduced a homogeneous amorphous layer in the subsurface region. Dominant defect species in B + - and P + -implanted specimen were identified as vacancy clusters from their annealing behavior. (author)

Development of a beam ion velocity detector for the heavy ion beam probe

International Nuclear Information System (INIS)

Fimognari, P. J.; Crowley, T. P.; Demers, D. R.

2016-01-01

In an axisymmetric plasma, the conservation of canonical angular momentum constrains heavy ion beam probe (HIBP) trajectories such that measurement of the toroidal velocity component of secondary ions provides a localized determination of the poloidal flux at the volume where they originated. We have developed a prototype detector which is designed to determine the beam angle in one dimension through the detection of ion current landing on two parallel planes of detecting elements. A set of apertures creates a pattern of ion current on wires in the first plane and solid metal plates behind them; the relative amounts detected by the wires and plates determine the angle which beam ions enter the detector, which is used to infer the toroidal velocity component. The design evolved from a series of simulations within which we modeled ion beam velocity changes due to equilibrium and fluctuating magnetic fields, along with the ion beam profile and velocity dispersion, and studied how these and characteristics such as the size, cross section, and spacing of the detector elements affect performance.

Development of a beam ion velocity detector for the heavy ion beam probe

Energy Technology Data Exchange (ETDEWEB)

Fimognari, P. J., E-mail: PJFimognari@XanthoTechnologies.com; Crowley, T. P.; Demers, D. R. [Xantho Technologies, LLC, Madison, Wisconsin 53705 (United States)

2016-11-15

In an axisymmetric plasma, the conservation of canonical angular momentum constrains heavy ion beam probe (HIBP) trajectories such that measurement of the toroidal velocity component of secondary ions provides a localized determination of the poloidal flux at the volume where they originated. We have developed a prototype detector which is designed to determine the beam angle in one dimension through the detection of ion current landing on two parallel planes of detecting elements. A set of apertures creates a pattern of ion current on wires in the first plane and solid metal plates behind them; the relative amounts detected by the wires and plates determine the angle which beam ions enter the detector, which is used to infer the toroidal velocity component. The design evolved from a series of simulations within which we modeled ion beam velocity changes due to equilibrium and fluctuating magnetic fields, along with the ion beam profile and velocity dispersion, and studied how these and characteristics such as the size, cross section, and spacing of the detector elements affect performance.

The deposition of thin metal films at the high-intensity pulsed-ion-beam influence on the metals

International Nuclear Information System (INIS)

Remnev, G.E.; Zakoutaev, A.N.; Grushin, I.I.; Matvenko, V.M.; Potemkin, A.V.; Ryzhkov, V.A.; Chernikov, E.V.

1996-01-01

A high-intensity pulsed ion beam with parameters: ion energy 350-500 keV, ion current density at a target > 200 A/cm 2 , pulse duration 60 ns, was used for metal deposition. The film deposition rate was 0.6-4.0 mm/s. Transmission electron microscopy/transmission electron diffraction investigations of the copper target-film system were performed. The impurity content in the film was determined by x-ray fluorescence analysis and secondary ion mass spectrometry. The angular distributions of the ablated plasma were measured. (author). 2 figs., 7 refs

The deposition of thin metal films at the high-intensity pulsed-ion-beam influence on the metals

Energy Technology Data Exchange (ETDEWEB)

Remnev, G E; Zakoutaev, A N; Grushin, I I; Matvenko, V M; Potemkin, A V; Ryzhkov, V A [Tomsk Polytechnic Univ. (Russian Federation). Nuclear Physics Inst.; Ivanov, Yu F [Construction Academy, Tomsk (Russian Federation); Chernikov, E V [Siberian Physical Technical Institute, Tomsk (Russian Federation)

1997-12-31

A high-intensity pulsed ion beam with parameters: ion energy 350-500 keV, ion current density at a target > 200 A/cm{sup 2}, pulse duration 60 ns, was used for metal deposition. The film deposition rate was 0.6-4.0 mm/s. Transmission electron microscopy/transmission electron diffraction investigations of the copper target-film system were performed. The impurity content in the film was determined by x-ray fluorescence analysis and secondary ion mass spectrometry. The angular distributions of the ablated plasma were measured. (author). 2 figs., 7 refs.

Electron beam charge state amplifier (EBQA)--a conceptual evaluation

International Nuclear Information System (INIS)

Dooling, J. C.

1998-01-01

A concept is presented for stripping low-energy, radioactive ions from 1+ to higher charge states. Referred to as an Electron Beam Charge State Amplifier (EBQA), this device accepts a continuous beam of singly-charged, radioactive ions and passes them through a high-density electron beam confined by a solenoidal magnetic field. Singly-charged ions may be extracted from standard Isotope-Separator-Online (ISOL) sources. An EBQA is potentially useful for increasing the charge state of ions prior to injection into post-acceleration stages at ISOL radioactive beam facilities. The stripping efficiency from q=1+ to 2+ (η 12 ) is evaluated as a function of electron beam radius at constant current with solenoid field, injected ion energy, and ion beam emittance used as parameters. Assuming a 5 keV, 1 A electron beam, η 12 = 0.38 for 0.1 keV, 132 Xe ions passing through an 8 Tesla solenoid, 1 m in length. Multi-pass configurations to achieve 3+ or 4+ charge states are also conceivable. The calculated efficiencies depend inversely on the initial ion beam emittances. The use of a helium-buffer-gas, ion-guide stage to improve the brightness of the 1+ beams [1] may enhance the performance of an EBQA

Synthesis of sponge-like hydrophobic NiBi_3 surface by 200 keV Ar ion implantation

International Nuclear Information System (INIS)

Siva, Vantari; Datta, D.P.; Chatterjee, S.; Varma, S.; Kanjilal, D.; Sahoo, Pratap K.

2017-01-01

Highlights: • A sponge-like hydrophobic NiBi_3 surface has been synthesized using 200 keV Ar ion implantation. • A competition between amorphization and re-crystallization was observed in the existing phases owing to comparable magnitudes of nuclear and electronic energy depositions. • The relation between hydrophobic nature and sponge-like NiBi_3 phase seems interesting, which is attributed to ion beam induced sputtering and mixing of the layers. - Abstract: Sponge-like nanostructures develop under Ar-ion implantation of a Ni–Bi bilayer with increasing ion fluence at room temperature. The surface morphology features different stages of evolution as a function of ion fluence, finally resulting in a planar surface at the highest fluence. Our investigations on the chemical composition reveal a spontaneous formation of NiBi_3 phase on the surface of the as deposited bilayer film. Interestingly, we observe a competition between crystallization and amorphization of the existing poly-crystalline phases as a function of the implanted fluence. Measurements of contact angle by sessile drop method clearly show the ion-fluence dependent hydrophobic nature of the nano-structured surfaces. The wettability has been correlated with the variation in roughness and composition of the implanted surface. In fact, our experimental results confirm dominant effect of ion-sputtering as well as ion-induced mixing at the bilayer interface in the evolution of the sponge-like surface.

High-precision hyperfine structure measurement in slow atomic ion beams by collinear laser-rf double resonance

International Nuclear Information System (INIS)

Amarjit Sen; Childs, W.J.; Goodman, L.S.

1987-01-01

A new collinear laser-ion beam apparatus for slow ions (1 to 1.5 keV) has been built for measuring the hyperfine structure of metastable levels of ions with laser-rf double resonance technique. Narrow linewidths of ∼60 kHz (FWHM) have been observed for the first time in such systems. As a first application the hyperfine structure of the 4f 7 ( 8 S 0 )5d 9 D/sub J/ 0 metastable levels of /sup 151,153/Eu + has been measured with high precision. 10 refs., 8 figs

Induction of antioxidant enzyme activity and lipid peroxidation level in ion-beam-bombarded rice seeds

Energy Technology Data Exchange (ETDEWEB)

Semsang, Nuananong, E-mail: nsemsang@gmail.com [Molecular Biology Laboratory, Department of Biology, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Yu, LiangDeng [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand)

2013-07-15

Highlights: ► Ion beam bombarded rice seeds in vacuum. ► Studied seed survival from the ion bombardment. ► Determined various antioxidant enzyme activities and lipid peroxidation level. ► Discussed vacuum, ion species and ion energy effects. ► Attributed the changes to free radical formation due to ion bombardment. -- Abstract: Low-energy ion beam bombardment has been used to mutate a wide variety of plant species. To explore the indirect effects of low-energy ion beam on biological damage due to the free radical production in plant cells, the increase in antioxidant enzyme activities and lipid peroxidation level was investigated in ion-bombarded rice seeds. Local rice seeds were bombarded with nitrogen or argon ion beams at energies of 29–60 keV and ion fluences of 1 × 10{sup 16} ions cm{sup −2}. The activities of the antioxidant enzymes; superoxide dismutase (SOD), catalase (CAT), ascorbate peroxidase (APX), dehydroascorbate reductase (DHAR), glutathione reductase (GR), glutathione S-transferase (GST) and lipid peroxidation level were assayed in the germinated rice seeds after ion bombardment. The results showed most of the enzyme activities and lipid peroxidation levels in both the argon and nitrogen bombarded samples were higher than those in the natural control. N-ion bombardment could induce higher levels of antioxidant enzyme activities in the rice samples than the Ar-ion bombardment. Additional effects due to the vacuum condition were found to affect activities of some antioxidant enzymes and lipid peroxidation level. This study demonstrates that ion beam bombardment and vacuum condition could induce the antioxidant enzyme activity and lipid peroxidation level which might be due to free radical production in the bombarded rice seeds.

Ion bombardment induced damage in silicon carbide studied by ion beam analytical methods

Energy Technology Data Exchange (ETDEWEB)

Szilagyi, E.; Kotai, E. [Magyar Tudomanyos Akademia, Budapest (HU). Research Inst. for Particle and Nuclear Physics (RIPNP); Khanh, N.Q.; Horvath, Z.E.; Lohner, T.; Battistig, G.; Zolnai, Z.; Gyulai, J. [Research Inst. for Technical Physics and Materials Science, Budapest (Hungary)

2001-07-01

Damage created by implantation of Al{sup +} ions into 4H-SiC is characterized using backscattering spectrometry in combination with channeling. The measurability of the damage profile in the carbon sublattice was demonstrated using the 4260 keV {sup 12}C({alpha},{alpha}){sup 12}C resonance. To create disorder, Al{sup +} ions with energy of 200 keV and 350 keV were implanted at room temperature. As an independent method, cross-sectional transmission electron microscopy was used to study the damage structure in irradiated 4H-SiC. (orig.)

Ion beam analysis fundamentals and applications

CERN Document Server

Nastasi, Michael; Wang, Yongqiang

2015-01-01

Ion Beam Analysis: Fundamentals and Applications explains the basic characteristics of ion beams as applied to the analysis of materials, as well as ion beam analysis (IBA) of art/archaeological objects. It focuses on the fundamentals and applications of ion beam methods of materials characterization.The book explains how ions interact with solids and describes what information can be gained. It starts by covering the fundamentals of ion beam analysis, including kinematics, ion stopping, Rutherford backscattering, channeling, elastic recoil detection, particle induced x-ray emission, and nucle

Neutral beams for mirrors

International Nuclear Information System (INIS)

Fink, J.H.

1983-01-01

An important demonstration of negative ion technology is proposed for FY92 in the MFTF-α+T, an upgrade of the Mirror Fusion Test Facility at the Lawrence Livermore National Laboratory. This facility calls for 200-keV negative ions to form neutral beams that generate sloshing ions in the reactor end plugs. Three different beam lines are considered for this application. Their advantages and disadvantages are discussed

The influence of target structure on topographical features produced by ion beam sputtering

International Nuclear Information System (INIS)

Whitton, J.L.; Grant, W.A.

1981-01-01

Ion beam erosion of solid surfaces often results in the development of distinctive topographical features. The relationship between the type of features formed by ion erosion and target structure has been investigated. Single crystals of copper and nickel and the amorphous alloy Metglas have been bombarded to high doses (approx. >=10 19 ions cm -2 ) with 40 keV Ar + and P + . Topography changes were monitored using SEM and structural changes by TEM. Targets that retain their long range crystallinity show sharply defined, regular features that are related to the target structure. Targets that are highly disordered, either intrinsically or as a result of the ion bombardment, produce diffuse, smaller features. Those differences are observed at all stages in topographical evolution. (orig.)

Spatially-Resolved Ion Trajectory Measurements During Cl2 Reactive Ion Beam Etching and Ar Ion Beam Etching

International Nuclear Information System (INIS)

Vawter, G. Allen; Woodworth, Joseph R.; Zubrzycki, Walter J.

1999-01-01

The angle of ion incidence at the etched wafer location during RIBE and IBE using Cl 2 , Ar and O 2 ion beams has been characterized using an ion energy and angle analyzer. Effects of beam current and accelerator grid bias on beam divergence and the spatial uniformity of the spread of incident angles are measured. It is observed that increased total beam current can lead to reduced current density at the sample stage due to enhanced beam divergence at high currents. Results are related to preferred etch system design for uniform high-aspect-ratio etching across semiconductor wafers

The role of space charge compensation for ion beam extraction and ion beam transport (invited)

International Nuclear Information System (INIS)

Spädtke, Peter

2014-01-01

Depending on the specific type of ion source, the ion beam is extracted either from an electrode surface or from a plasma. There is always an interface between the (almost) space charge compensated ion source plasma, and the extraction region in which the full space charge is influencing the ion beam itself. After extraction, the ion beam is to be transported towards an accelerating structure in most cases. For lower intensities, this transport can be done without space charge compensation. However, if space charge is not negligible, the positive charge of the ion beam will attract electrons, which will compensate the space charge, at least partially. The final degree of Space Charge Compensation (SCC) will depend on different properties, like the ratio of generation rate of secondary particles and their loss rate, or the fact whether the ion beam is pulsed or continuous. In sections of the beam line, where the ion beam is drifting, a pure electrostatic plasma will develop, whereas in magnetic elements, these space charge compensating electrons become magnetized. The transport section will provide a series of different plasma conditions with different properties. Different measurement tools to investigate the degree of space charge compensation will be described, as well as computational methods for the simulation of ion beams with partial space charge compensation

Structural and optical modification in 4H-SiC following 30 keV silver ion irradiation

Science.gov (United States)

Kaushik, Priya Darshni; Aziz, Anver; Siddiqui, Azher M.; Lakshmi, G. B. V. S.; Syväjärvi, Mikael; Yakimova, Rositsa; Yazdi, G. Reza

2018-05-01

The market of high power, high frequency and high temperature based electronic devices is captured by SiC due to its superior properties like high thermal conductivity and high sublimation temperature and also due to the limitation of silicon based electronics in this area. There is a need to investigate effect of ion irradiation on SiC due to its application in outer space as outer space is surrounded both by low and high energy ion irradiations. In this work, effect of low energy ion irradiation on structural and optical property of 4H-SiC is investigated. ATR-FTIR is used to study structural modification and UV-Visible spectroscopy is used to study optical modifications in 4H-SiC following 30 keV Ag ion irradiation. FTIR showed decrease in bond density of SiC along the ion path (track) due to the creation of point defects. UV-Visible absorption spectra showed decrease in optical band gap from 3.26 eV to 2.9 eV. The study showed degradation of SiC crystallity and change in optical band gap following low energy ion irradiation and should be addressed while fabricationg devices based on SiC for outer space application. Additionally, this study provides a platform for introducing structural and optical modification in 4H-SiC using ion beam technology in a controlled manner.

Production of atomic negative ion beams of the Group IA elements

International Nuclear Information System (INIS)

Alton, G.D.; Mills, G.D.

1988-01-01

A method has been developed which enables the direct sputter generation of atomic negative ion beams of all members of the Group IA elements (Li, Na, K, Rb, and Cs). The method consists of the use of sputter samples formed by pressing mixtures of the carbonates of the Group IA elements and 10% (atomic) Cu, Ag, or other metal powder. The following intensities are typical of those observed from carbonate samples subjected to /approximately/3 KeV cesium ion bombardment: Li - : ≥0.5 μA; Na - : ≥0.5 μA; K - : ≥0.5 μA; Rb - : ≥0.5 μA; Cs - : ≥0.2 μA. 7 refs., 2 figs., 1 tab

Nano-ranged low-energy ion-beam-induced DNA transfer in biological cells

Energy Technology Data Exchange (ETDEWEB)

Yu, L.D., E-mail: yuld@fnrf.science.cmu.ac.th [Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand); Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Wongkham, W. [Department of Biology, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Prakrajang, K. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Sangwijit, K.; Inthanon, K. [Department of Biology, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thongkumkoon, P. [Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand); Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Wanichapichart, P. [Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand); Membrane Science and Technology Research Center, Department of Physics, Faculty of Science, Prince of Songkla University, Hat Yai, Songkla 90112 (Thailand); Anuntalabhochai, S. [Department of Biology, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand)

2013-06-15

Low-energy ion beams at a few tens of keV were demonstrated to be able to induce exogenous macromolecules to transfer into plant and bacterial cells. In the process, the ion beam with well controlled energy and fluence bombarded living cells to cause certain degree damage in the cell envelope in nanoscales to facilitate the macromolecules such as DNA to pass through the cell envelope and enter the cell. Consequently, the technique was applied for manipulating positive improvements in the biological species. This physical DNA transfer method was highly efficient and had less risk of side-effects compared with chemical and biological methods. For better understanding of mechanisms involved in the process, a systematic study on the mechanisms was carried out. Applications of the technique were also expanded from DNA transfer in plant and bacterial cells to DNA transfection in human cancer cells potentially for the stem cell therapy purpose. Low-energy nitrogen and argon ion beams that were applied in our experiments had ranges of 100 nm or less in the cell envelope membrane which was majorly composed of polymeric cellulose. The ion beam bombardment caused chain-scission dominant damage in the polymer and electrical property changes such as increase in the impedance in the envelope membrane. These nano-modifications of the cell envelope eventually enhanced the permeability of the envelope membrane to favor the DNA transfer. The paper reports details of our research in this direction.

Nano-ranged low-energy ion-beam-induced DNA transfer in biological cells

International Nuclear Information System (INIS)

Yu, L.D.; Wongkham, W.; Prakrajang, K.; Sangwijit, K.; Inthanon, K.; Thongkumkoon, P.; Wanichapichart, P.; Anuntalabhochai, S.

2013-01-01

Low-energy ion beams at a few tens of keV were demonstrated to be able to induce exogenous macromolecules to transfer into plant and bacterial cells. In the process, the ion beam with well controlled energy and fluence bombarded living cells to cause certain degree damage in the cell envelope in nanoscales to facilitate the macromolecules such as DNA to pass through the cell envelope and enter the cell. Consequently, the technique was applied for manipulating positive improvements in the biological species. This physical DNA transfer method was highly efficient and had less risk of side-effects compared with chemical and biological methods. For better understanding of mechanisms involved in the process, a systematic study on the mechanisms was carried out. Applications of the technique were also expanded from DNA transfer in plant and bacterial cells to DNA transfection in human cancer cells potentially for the stem cell therapy purpose. Low-energy nitrogen and argon ion beams that were applied in our experiments had ranges of 100 nm or less in the cell envelope membrane which was majorly composed of polymeric cellulose. The ion beam bombardment caused chain-scission dominant damage in the polymer and electrical property changes such as increase in the impedance in the envelope membrane. These nano-modifications of the cell envelope eventually enhanced the permeability of the envelope membrane to favor the DNA transfer. The paper reports details of our research in this direction.

Theoretical study of the electrostatic lens aberrations of a negative ion accelerator for a neutral beam injector

International Nuclear Information System (INIS)

Miyamoto, Kenji; Hatayama, Akiyoshi

2009-01-01

Aberrations due to the electrostatic lenses of a negative ion accelerator for a neutral beam injector and the space charge effect are theoretically investigated. A multi-stage extractor/accelerator is modeled and the aberration coefficients are numerically calculated using the eikonal method, which is conventionally used in electron optics. The aberrations are compared with the radii of a beam core with good beam divergence and a beam halo with poor beam divergence. H - beamlet profile measurements give the 1/e radii of the beam core and beam halo of 5.8 mm (beam divergence angel: 6 mrad) and 11.5 mm (beam divergence angel: 12 mrad), respectively. When the beam divergence angle of the beam core is 5 mrad and the beam energy is 406 keV, the aberrations due to the electrostatic lenses are less than a few millimeters, thus are less than the radii of the beam core and beam halo. The geometrical aberrations due to te space charge effect (negative ion current density: 10 mA/cm 2 ), however, are estimated to be much larger than the radius of the beam halo. Although the aperture radii of the grids are not taken into account in this estimation, the results indicate that the space charge effect is an important factor in the aberration or beam halo in a negative ion accelerator. (author)

Ion beam generation and focusing

International Nuclear Information System (INIS)

Miller, P.A.; Mendel, C.W.; Swain, D.W.; Goldstein, S.A.

1975-01-01

Calculations have shown that efficiently generated and focused ion beams could have significant advantages over electron beams in achieving ignition of inertially-confined thermonuclear fuel. Efficient ion beam generation implies use of a good ion source and suppression of net electron current. Net electron flow can be reduced by allowing electrons to reflex through a highly transparent anode or by use of transverse magnetic fields (either beam self-fields or externally applied fields). Geometric focusing can be achieved if the beam is generated by appropriately shaped electrodes. Experimental results are presented which demonstrate ion beam generation in both reflexing and pinched-flow diodes. Spherically shaped electrodes are used to concentrate a proton beam, and target response to proton deposition is studied

Steady State Sputtering Yields and Surface Compositions of Depleted Uranium and Uranium Carbide bombarded by 30 keV Gallium or 16 keV Cesium Ions.

Energy Technology Data Exchange (ETDEWEB)

Siekhaus, W. J. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Teslich, N. E. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Weber, P. K. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)

2014-10-23

Depleted uranium that included carbide inclusions was sputtered with 30-keV gallium ions or 16-kev cesium ions to depths much greater than the ions’ range, i.e. using steady-state sputtering. The recession of both the uranium’s and uranium carbide’s surfaces and the ion corresponding fluences were used to determine the steady-state target sputtering yields of both uranium and uranium carbide, i.e. 6.3 atoms of uranium and 2.4 units of uranium carbide eroded per gallium ion, and 9.9 uranium atoms and 3.65 units of uranium carbide eroded by cesium ions. The steady state surface composition resulting from the simultaneous gallium or cesium implantation and sputter-erosion of uranium and uranium carbide were calculated to be U₈₆Ga₁₄, (UC)₇₀Ga₃₀ and U₈₁Cs₉, (UC)₇₉Cs₂₁, respectively.

A Mutant of Bacillus Subtilis with High-Producing Surfactin by Ion Beam Implantation

International Nuclear Information System (INIS)

Liu Qingmei; Yuan Hang; Wang Jun; Gong Guohong; Zhou Wei; Fan Yonghong; Wang Li; Yao Jianming; Yu Zengliang

2006-01-01

In order to generate a mutant of Bacillus subtilis with enhanced surface activity through low energy nitrogen ion beam implantation, the effects of energy and dose of ions implanted were studied. The morphological changes in the bacteria were observed by scanning electron microscope (SEM). The optimum condition of ions implantation, 20 keV of energy and 2.6x10 15 N + /cm 2 in dose, was determined. A mutant, B.s-E-8 was obtained, whose surface activity of 50-fold and 100-fold diluted cell-free Landy medium was as 5.6-fold and 17.4-fold as the wild strain. The microbial growth and biosurfactant production of both the mutant and the wild strain were compared. After purified by ultrafiltration and SOURCE 15PHE, the biosurfactant was determined to be a complex of surfactin family through analysis of electrospray ionization mass spectrum (ESI/MS) and there was an interesting finding that after the ion beam implantation the intensities of the components were different from the wild type strain

Investigation of acoustic waves generated in an elastic solid by a pulsed ion beam and their application in a FIB based scanning ion acoustic microscope

International Nuclear Information System (INIS)

Akhmadaliev, C.

2004-12-01

The aim of this work is to investigate the acoustic wave generation by pulsed and periodically modulated ion beams in different solid materials depending on the beam parameters and to demonstrate the possibility to apply an intensity modulated focused ion beam (FIB) for acoustic emission and for nondestructive investigation of the internal structure of materials on a microscopic scale. The combination of a FIB and an ultrasound microscope in one device can provide the opportunity of nondestructive investigation, production and modification of micro- and nanostructures simultaneously. This work consists of the two main experimental parts. In the first part the process of elastic wave generation during the irradiation of metallic samples by a pulsed beam of energetic ions was investigated in an energy range from 1.5 to 10 MeV and pulse durations of 0.5-5 μs, applying ions with different masses, e.g. oxygen, silicon and gold, in charge states from 1 + to 4 + . The acoustic amplitude dependence on the ion beam parameters like the ion mass and energy, the ion charge state, the beam spot size and the pulse duration were of interest. This work deals with ultrasound transmitted in a solid, i.e. bulk waves, because of their importance for acoustic transmission microscopy and nondestructive inspection of internal structure of a sample. The second part of this work was carried out using the IMSA-100 FIB system operating in an energy range from 30 to 70 keV. The scanning ion acoustic microscope based on this FIB system was developed and tested. (orig.)

Investigation of acoustic waves generated in an elastic solid by a pulsed ion beam and their application in a FIB based scanning ion acoustic microscope

Energy Technology Data Exchange (ETDEWEB)

Akhmadaliev, C.

2004-12-01

The aim of this work is to investigate the acoustic wave generation by pulsed and periodically modulated ion beams in different solid materials depending on the beam parameters and to demonstrate the possibility to apply an intensity modulated focused ion beam (FIB) for acoustic emission and for nondestructive investigation of the internal structure of materials on a microscopic scale. The combination of a FIB and an ultrasound microscope in one device can provide the opportunity of nondestructive investigation, production and modification of micro- and nanostructures simultaneously. This work consists of the two main experimental parts. In the first part the process of elastic wave generation during the irradiation of metallic samples by a pulsed beam of energetic ions was investigated in an energy range from 1.5 to 10 MeV and pulse durations of 0.5-5 {mu}s, applying ions with different masses, e.g. oxygen, silicon and gold, in charge states from 1{sup +} to 4{sup +}. The acoustic amplitude dependence on the ion beam parameters like the ion mass and energy, the ion charge state, the beam spot size and the pulse duration were of interest. This work deals with ultrasound transmitted in a solid, i.e. bulk waves, because of their importance for acoustic transmission microscopy and nondestructive inspection of internal structure of a sample. The second part of this work was carried out using the IMSA-100 FIB system operating in an energy range from 30 to 70 keV. The scanning ion acoustic microscope based on this FIB system was developed and tested. (orig.)

Design of a continuously operated 1-keV deuterium-ion extractor

International Nuclear Information System (INIS)

Fink, J.H.

1978-01-01

A novel grid structure that is cooled only by radiation and conduction is shown to be capable of continuously extracting 2.5 kA.m -2 of 1-keV positive deuterium ions while dissipating a power loading of 0.4 MW.m -2

Ion temperatures in TORTUR III

International Nuclear Information System (INIS)

Hendriks, F.B.

1985-12-01

Spatially resolved ion-energy distributions are presented for discharges in the TORTUR III tokamak. The measurements are performed in an active method, using a neutral hydrogen probing beam of 20-30 keV, to enhance charge-exchange processes along its path, as well as by the usual passive method. Ion temperatures can amount up to 1 keV

Ion-Beam-Excited Electrostatic Ion Cyclotron Waves

DEFF Research Database (Denmark)

Michelsen, Poul; Pécseli, Hans; Juul Rasmussen, Jens

1976-01-01

Self-excited electrostatic ion cyclotron waves were observed in an ion-beam-plasma system produced in a DP-operated Q-machine. The frequency of the waves showed the theoretically predicted variation with the magnetic field.......Self-excited electrostatic ion cyclotron waves were observed in an ion-beam-plasma system produced in a DP-operated Q-machine. The frequency of the waves showed the theoretically predicted variation with the magnetic field....

Study of SiO{sub 2} surface sputtering by a 250-550 keV He{sup +} ion beam during high-resolution Rutherford backscattering measurements

Energy Technology Data Exchange (ETDEWEB)

Kusanagi, Susumu [Materials Analysis Laboratory, Advanced Design Technology Center, Sony Corporation, 4-16-1 Okata Atsugi-shi, Kanagawa 243-0021 (Japan)]. E-mail: susumu.kusanagi@jp.sony.com; Kobayashi, Hajime [Materials Analysis Laboratory, Advanced Design Technology Center, Sony Corporation, 4-16-1 Okata Atsugi-shi, Kanagawa 243-0021 (Japan)

2006-08-15

Decreases in oxygen signal intensities in spectra of high-resolution Rutherford backscattering spectrometry (HRBS) were observed during measurements on a 5-nm thick SiO{sub 2} layer on a Si substrate when irradiated by 250-550 keV He{sup +} ions. Shifts in an implanted arsenic profile in a 5-nm thick SiO{sub 2}/Si substrate were also observed as a result of He{sup +} ion irradiation. These results lead to the conclusion that the SiO{sub 2} surface was sputtered by He{sup +} ions in this energy range.

Study of ion beam-initiated inertial-confinement fusion. Final report, January 1, 1981-December 31, 1981

International Nuclear Information System (INIS)

Chang, D.; Phelps, D.

1982-02-01

For the past four years, Occidental Research Corporation has been conducting a fusion program which is based on a reactor concept in which geometrically focused and time compressed beams of cold light ions and neutralizing cold electrons from large area sources are ballistically propagated over several meters through a near vacuum to implode a pellet target. The approach combines the cost advantage of efficient moderate voltage pulsed power technology with the simplicity-advantage of unguided ballistic propagation. In addition, the compactness, efficiency, focusability and energy range of the system makes the approach of great interest for supplementary heating of magnetically confined fusion plasmas. Theoretical analyses have been made of beam-target interaction, beam progagation and source accelerator design. A one-dimensional implosion and nuclear burn code indicates that significant yields can be obtained from simple targets with moderately energetic light ions. Experimentally the short-term objective is to demonstrate that the required degree of space-time focusing can be achieved on a 200-500 keV electron neutralized ion (or plasma) beam from a simple prototype 100 sq cm low temperature zeolite source

Spectrometric determination of the species distribution of hydrogen and deuterium in the multi-megawatt ion sources (PINI) of the neutral beam injectors NI-1 and NI-2 of TEXTOR

International Nuclear Information System (INIS)

Rotter, H.; Uhlemann, R.

1990-11-01

The ion species fractions of hydrogen H + , H 2 + , H 3 + and deuterium D + , D 2 + , D 3 + in the extracted beam of the multi-megawatt ion sources (PINI) of the neutral beam injectors of TEXTOR are determined. The measurements are obtained from two grating spectrometers of 0.5 m focal length with a light guiding system of 50 mm aperture using the Doppler shifted H α /D α -light of the accelerated beam particles. The spectral resolution obtained is 0.76 A with a 50 μm entrance slit. The ion source is a bucket source (modified JET PINI) with a multipole magnetic field in checkerboard arrangement. The species fraction measurements are performed as function of beam current, ion source pressure and beam pulse length. The results for hydrogen and deuterium at particle energies of 20-55 keV and beam currents of 13-87 A show no significant difference between neutral injector I and II. For 55 keV and a beam current of 87 A in hydrogen and 63 A in deuterium a species mix of 67.2:24.5:8.4% (H + :H 2 + :H 3 + ) and of 69.1:23.8:7.1% (D + :D 2 + :D 3 + ) is obtained. (orig.) [de

Effect of dose on the evolution of cavities in 500-KeV 4He+-ion irradiated nickel

International Nuclear Information System (INIS)

Fenske, G.; Das, S.K.; Kaminsky, M.; Miley, G.H.

1979-01-01

Transmission electron microscopy has been used to investigate the effect of total dose on the depth distribution of cavities (voids or bubbles) in nickel irradiated at 500 0 C with 500-keV 4 He + ions. A transverse sectioning technique, which allows one to obtain the entire depth distribution of cavities and of damage from a single specimen, was utilized. The size, number density and volume fraction of bubbles or voids were measured from the micrographs taken from samples sectioned parallel to the direction of the incident beam. The results for the dose range studied (2 x 10 19 to 1 x 10 21 ions/m 2 ) show that the average cavity diameter, number density, and the volume fraction (i.e., swelling) increases with increasing dose. The peak in the swelling distribution occurs at depths 8 to 15% deeper than the peak in the calculated projected range profile

Determination of Penetration Depth of 800 keV Electron Beam into Coal Fired Power Plant Flue Gas at in a Electron Beam Machine Flue Gas Treatment System

International Nuclear Information System (INIS)

Rany Saptaaji

2008-01-01

Penetration depth calculation of 800 keV electron beam into flue gas from coal fired power plan is presented in this paper. Electron Beam for Flue Gas Treatment (EB-FGT) is a dry treatment process using electron beam to simultaneously reduce SO 2 and NO x . Flue gas irradiation produces active radicals and then reaction with SO 2 and NO x produces nitrate acid and sulphate acid. Process vessel is needed in this process as reaction container of flue gas with electron beam. The calculation of electron beam penetration depth into flue gas is used to determine the process vessel dimension. The result of calculation of optimum penetration depth of 800 keV electron beam into flue gas is 188.67 cm. (author)

Topography evolution of 500 keV Ar(4+) ion beam irradiated InP(100) surfaces - formation of self-organized In-rich nano-dots and scaling laws.

Science.gov (United States)

Sulania, Indra; Agarwal, Dinesh C; Kumar, Manish; Kumar, Sunil; Kumar, Pravin

2016-07-27

We report the formation of self-organized nano-dots on the surface of InP(100) upon irradiating it with a 500 keV Ar(4+) ion beam. The irradiation was carried out at an angle of 25° with respect to the normal at the surface with 5 different fluences ranging from 1.0 × 10(15) to 1.0 × 10(17) ions per cm(2). The morphology of the ion-irradiated surfaces was examined by atomic force microscopy (AFM) and the formation of the nano-dots on the irradiated surfaces was confirmed. The average size of the nano-dots varied from 44 ± 14 nm to 94 ± 26 nm with increasing ion fluence. As a function of the ion fluence, the variation in the average size of the nano-dots has a great correlation with the surface roughness, which changes drastically up to the ion fluence of 1.0 × 10(16) ions per cm(2) and attains almost a saturation level for further irradiation. The roughness and the growth exponent values deduced from the scaling laws suggest that the kinetic sputtering and the large surface diffusion steps of the atoms are the primary reasons for the formation of the self-organized nanodots on the surface. X-ray photo-electron spectroscopy (XPS) studies show that the surface stoichiometry changes with the ion fluence. With irradiation, the surface becomes more indium (In)-rich owing to the preferential sputtering of the phosphorus atoms (P) and the pure metallic In nano-dots evolve at the highest ion fluence. The cross-sectional scanning electron microscopy (SEM) analysis of the sample irradiated with the highest fluence showed the absence of the nanostructuring beneath the surface. The surface morphological changes at this medium energy ion irradiation are discussed in correlation with the low and high energy experiments to shed more light on the mechanism of the well separated nano-dot formation.

Development of a keV single-ion-implanter for nanofabrication

International Nuclear Information System (INIS)

Yang, C.; Jamieson, D.N.; Hopf, T.; Tamanyan, G.; Spizziri, P.; Pakes, C.; Andresen, S.E.; Hudson, F.; Gauja, E.; Dzurak, A.; Clark, R.G.

2005-01-01

Traditional methods of doping semiconductors have a difficulty meeting the demand for high precision doping due to large statistical fluctuations in the numbers of dopant atoms introduced in the ever shrinking volume in micro- and nano-electronics devices, especially when the fabrication process approaches the nanometre scale. The statistical fluctuations in doping semiconductors for the fabrication of devices with a very small feature size may lead to inconsistent and unreliable performance. This paper describes the adaptation of a commercial ion implanter into a single-ion-implantation system for the accurate delivery of dopants into a nanometre or micrometre area in a silicon substrate. All the implanted ions can be accurately counted with near 100% certainty through online detection using the silicon substrate itself as an ion detector. A variety of ion species including B + , N + , P + at the energy range of 10-15 keV can be delivered in the single ion implantation system. (author). 6 refs., 6 figs

Oxide-nitride-oxide dielectric stacks with Si nanoparticles obtained by low-energy ion beam synthesis

International Nuclear Information System (INIS)

Ioannou-Sougleridis, V; Dimitrakis, P; Vamvakas, V Em; Normand, P; Bonafos, C; Schamm, S; Mouti, A; Assayag, G Ben; Paillard, V

2007-01-01

Formation of a thin band of silicon nanoparticles within silicon nitride films by low-energy (1 keV) silicon ion implantation and subsequent thermal annealing is demonstrated. Electrical characterization of metal-insulator-semiconductor capacitors reveals that oxide/Si-nanoparticles-nitride/oxide dielectric stacks exhibit enhanced charge transfer characteristics between the substrate and the silicon nitride layer compared to dielectric stacks using unimplanted silicon nitride. Attractive results are obtained in terms of write/erase memory characteristics and data retention, indicating the large potential of the low-energy ion-beam-synthesis technique in SONOS memory technology

Ion-Ion Plasmas Produced by Electron Beams

Science.gov (United States)

Fernsler, R. F.; Leonhardt, D.; Walton, S. G.; Meger, R. A.

2001-10-01

The ability of plasmas to etch deep, small-scale features in materials is limited by localized charging of the features. The features charge because of the difference in electron and ion anisotropy, and thus one solution now being explored is to use ion-ion plasmas in place of electron-ion plasmas. Ion-ion plasmas are effectively electron-free and consist mainly of positive and negative ions. Since the two ion species behave similarly, localized charging is largely eliminated. However, the only way to produce ion-ion plasmas at low gas pressure is to convert electrons into negative ions through two-body attachment to neutrals. While the electron attachment rate is large at low electron temperatures (Te < 1 eV) in many of the halogen gases used for processing, these temperatures occur in most reactors only during the afterglow when the heating fields are turned off and the plasma is decaying. By contrast, Te is low nearly all the time in plasmas produced by electron beams, and therefore electron beams can potentially produce ion-ion plasmas continuously. The theory of ion-ion plasmas formed by pulsed electron beams is examined in this talk and compared with experimental results presented elsewhere [1]. Some general limitations of ion-ion plasmas, including relatively low flux levels, are discussed as well. [1] See the presentation by D. Leonhardt et al. at this conference.

Effect of carbon on ion beam mixing of Fe-Ti bilayers

Energy Technology Data Exchange (ETDEWEB)

Hirvonen, J.P.; Nastasi, M.; Lappalainen, R.; Sickafus, K. (Los Alamos National Lab., NM (USA); Helsinki Univ. (Finland). Dept. of Physics; Los Alamos National Lab., NM (USA))

1989-01-01

The influence of implanted carbon on ion beam mixing of a Fe-Ti system was investigated. Carbon was introduced into bilayer samples by implanting {sup 13}C isotopes. The implantation energies were selected to set the mean range of carbon ions in either the iron or titanium layer. The effect of implanted carbon on 400 keV Ar ion mixing in the temperature range from 0 to 300{degree}C was studied using Rutherford backscattering spectroscopy at the energy of 5 MeV. Changes in carbon concentration profiles were probed utilizing the resonance of the nuclear reaction {sup 13}C(p,{gamma}){sup 14}N at the proton energy of 1.748 MeV. The measurements revealed that mixing was not affected by carbon implanted into the titanium layer. However, carbon in the iron layer remarkably retarded mixing at all temperatures investigated. Significant changes in carbon depth distributions were observed only when the sample with implanted carbon in the iron layer was mixed at 300{degree}C. These results are explained in terms of the enhanced mobility of carbon in an evaporated iron film which allows segregation to the interface. At low temperatures, however, vacancy-carbon interaction in iron may have a contribution to the retarded ion beam mixing. 19 refs., 3 figs.

Effects of Prenatal Irradiation with an Accelerated Heavy-Ion Beam on Postnatal Development in Rats

Science.gov (United States)

Wang, B.; Murakami, M.; Eguchi-Kasai, K.; Nojima, K.; Shang, Y.; Tanaka, K.; Fujita, K.; Coffigny, H.; Hayata, I.

Effects on postnatal neurophysiological development in offspring were studied following exposure of pregnant Wistar rats to accelerated neon-ion beams with a LET value of about 30 keV mu m at a dose range from 0 1 Gy to 2 0Gy on the 15th day of gestation The age at which four physiologic markers appeared and five reflexes were acquired was examined prior to weaning Gain in body weight was monitored until the offspring were 3 months old Male offspring were evaluated as young adults using two behavioral tests The effects of X-rays at 200 kVp measured for the same biological end points were studied for comparison Our previous study on carbon-ion beams with a LET value of about 13 keV mu m was also cited to elucidate a possible LET-related effect For most of the endpoints at early age significant alteration was even observed in offspring prenatally received 0 1 Gy of accelerated neon ions while neither X rays nor carbon-ions under the same dose resulted in such a significant alteration compared to that from the sham-irradiated dams All offspring whose mothers received 2 0 Gy died prior to weaning Offspring from dams irradiated with accelerated neon ions generally showed higher incidences of prenatal death and preweaning mortality markedly delayed accomplishment in their physiological markers and reflexes and gain in body weight compared to those exposed to X-rays or carbon ions at doses of 0 1 to 1 5 Gy Significantly reduced ratios of main organ weight to body weight at postnatal ages of 30 60 and 90 days were also observed

Low-energy beam transport using space-charge lenses

International Nuclear Information System (INIS)

Meusel, O.; Bechtold, A.; Pozimski, J.; Ratzinger, U.; Schempp, A.; Klein, H.

2005-01-01

Space-charge lenses (SCL) of the Gabor type provide strong cylinder symmetric focusing for low-energy ion beams using a confined nonneutral plasma. They need modest magnetic and electrostatic field strength and provide a short installation length when compared to conventional LEBT-lenses like quadrupoles and magnetic solenoids. The density distribution of the enclosed space charge within the Gabor lens is given by the confinement in transverse and longitudinal directions. In the case of a positive ion beam, the space charge of the confined electron cloud may cause an overcompensation of the ion beam space-charge force and consequently focuses the beam. To investigate the capabilities of an SCL double-lens system for ion beam into an RFQ, a test injector was installed at IAP and put into operation successfully. Furthermore, to study the focusing capabilities of this lens at beam energies up to 500 keV, a high-field Gabor lens was built and installed downstream of the RFQ. Experimental results of the beam injection into the RFQ are presented as well as those of these first bunched beam-focusing tests with the 110 A keV He + beam

Ion beam mixing of marker layers in Al and Si