WorldWideScience

Sample records for ka-band gan amplifier

  1. MMIC for High-Efficiency Ka-BAnd GaN Power Amplifiers (2007043), Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — This proposal addresses the need for high-efficiency, high-output power amplifiers operating in the Ka-band frequencies. For space communications, the power...

  2. High-Efficiency, Ka-band Solid-State Power Amplifier Utilizing GaN Technology, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — QuinStar Technology proposes to develop an efficient, solid-state power amplifier (SSPA), operating at Ka-band frequencies, for high data rate, long range space...

  3. High-Efficiency, Ka-Band Solid-State Power Amplifier Utilizing GaN Technology, Phase II

    Data.gov (United States)

    National Aeronautics and Space Administration — QuinStar Technology proposes to develop a high-efficiency, solid-state power amplifier (SSPA), operating at Ka-band frequencies, for high data rate, long range space...

  4. Ka-Band Klystron Amplifier for CUBESATs, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — We propose a Ka-Band klystron amplifier for use in CubeSats. It will operate at 35.7 GHz, have 400 MHz of bandwidth, and output at least 32 watts of saturated power....

  5. Ka-Band Klystron Amplifier for CUBESATs, Phase II

    Data.gov (United States)

    National Aeronautics and Space Administration — We offer an ultra-compact klystron amplifier for remote sensing on CubeSats. It will operate at 35.7 GHz, have 400 MHz bandwidth, and output greater than 32 watts...

  6. A Novel Ku-Band/Ka-Band and Ka-Band/E-Band Multimode Waveguide Couplers for Power Measurement of Traveling-Wave Tube Amplifier Harmonic Frequencies

    Science.gov (United States)

    Wintucky, Edwin G.; Simons, Rainee N.

    2015-01-01

    This paper presents the design, fabrication and test results for a novel waveguide multimode directional coupler (MDC). The coupler, fabricated from two dissimilar frequency band waveguides, is capable of isolating power at the second harmonic frequency from the fundamental power at the output port of a traveling-wave tube (TWT) amplifier. Test results from proof-of-concept demonstrations are presented for a Ku-band/Ka-band MDC and a Ka-band/E-band MDC. In addition to power measurements at harmonic frequencies, a potential application of the MDC is in the design of a satellite borne beacon source for atmospheric propagation studies at millimeter-wave (mm-wave) frequencies (Ka-band and E-band).

  7. Ka-Band Waveguide Two-Way Hybrid Combiner for MMIC Amplifiers

    Science.gov (United States)

    Simons, Rainee N.; Chevalier, Christine T.; Wintucky, Edwin G.; Freeman, Jon C.

    2010-01-01

    The design, simulation, and characterization of a novel Ka-band (32.05 0.25 GHz) rectangular waveguide two-way branch-line hybrid unequal power combiner (with port impedances matched to that of a standard WR-28 waveguide) has been created to combine input signals, which are in phase and with an amplitude ratio of two. The measured return loss and isolation of the branch-line hybrid are better than 22 and 27 dB, respectively. The measured combining efficiency is 92.9 percent at the center frequency of 32.05 GHz. This circuit is efficacious in combining the unequal output power from two Ka-band GaAs pseudomorphic high electron mobility transistor (pHEMT) monolithic microwave integrated circuit (MMIC) power amplifiers (PAs) with high efficiency. The component parts include the branch-line hybrid-based power combiner and the MMIC-based PAs. A two-way branch-line hybrid is a four-port device with all ports matched; power entering port 1 is divided in phase, and into the ratio 2:1 between ports 3 and 4. No power is coupled to port 2. MMICs are a type of integrated circuit fabricated on GaAs that operates at microwave frequencies, and performs the function of signal amplification. The power combiner is designed to operate over the frequency band of 31.8 to 32.3 GHz, which is NASA's deep space frequency band. The power combiner would have an output return loss better than 20 dB. Isolation between the output port and the isolated port is greater than 25 dB. Isolation between the two input ports is greater than 25 dB. The combining efficiency would be greater than 90 percent when the ratio of the two input power levels is two. The power combiner is machined from aluminum with E-plane split-block arrangement, and has excellent reliability. The flexibility of this design allows the combiner to be customized for combining the power from MMIC PAs with an arbitrary power output ratio. In addition, it allows combining a low-power GaAs MMIC with a high-power GaN MMIC. The arbitrary

  8. Solid State KA-Band, Solid State W-Band and TWT Amplifiers, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — Phase I of the proposal describes plans to develop a state of the art transmitter for the W-Band and KA -Band Cloud Radar system. Our focus will be concentrated in...

  9. Ka-Band AlGaN/GaN HEMT high power and driver amplifier MMICs

    NARCIS (Netherlands)

    Heijningen, M. van; Vliet, F.E. van; Quay, R.; Raay, F. van; Kiefer, R.; Mueller, S.; Krausse, D.; Seelmann-Eggebert, M.; Mikulla, M.; Schlechtweg, M.

    2005-01-01

    In this paper the MMIC technology, design and characterization of a high power amplifier and driver amplifier MMIC at 30 GHz in AlGaN/GaN HEMT technology are presented. The MMICs are designed using CPW technology on a 390 μm thick SiC substrate. The measured small-signal gain of the driver is 14 dB

  10. High Efficiency Traveling-Wave Tube Power Amplifier for Ka-Band Software Defined Radio on International Space Station-A Platform for Communications Technology Development

    Science.gov (United States)

    Simons, Rainee N.; Force, Dale A.; Kacpura, Thomas J.

    2013-01-01

    The design, fabrication and RF performance of the output traveling-wave tube amplifier (TWTA) for a space based Ka-band software defined radio (SDR) is presented. The TWTA, the SDR and the supporting avionics are integrated to forms a testbed, which is currently located on an exterior truss of the International Space Station (ISS). The SDR in the testbed communicates at Ka-band frequencies through a high-gain antenna directed to NASA s Tracking and Data Relay Satellite System (TDRSS), which communicates to the ground station located at White Sands Complex. The application of the testbed is for demonstrating new waveforms and software designed to enhance data delivery from scientific spacecraft and, the waveforms and software can be upgraded and reconfigured from the ground. The construction and the salient features of the Ka-band SDR are discussed. The testbed is currently undergoing on-orbit checkout and commissioning and is expected to operate for 3 to 5 years in space.

  11. Large power microwave nonlinear effects on multifunction amplifier chip for Ka-band T/R module of phased array radar

    Science.gov (United States)

    Guo, Guo; Gu, Ling; Wu, Ruowu; Xu, Xiong; Zhou, Taifu; Niu, Xinjian; Liu, Yinghui; Wang, Hui; Wei, Yanyu; Guo, Changyong

    2017-12-01

    Nonlinear effects of large power millimeter wave on critical chips for the T/R module of phased array radar is experimental studied and analyzed in this paper. A multifunction amplifier chip is selected for our experiments. A solid continuous wave (CW) source and a large power pulsed magnetron are both employed to generate the Ka-band microwave. The input-output characteristics, the degradation and destroy threshold of the chips are obtained through a series of experimental tests. At last, the results are given by figures and analyzed theoretically.

  12. A Ka-band low-noise amplifier with a coplanar waveguide (CPW) structure with 0.15-μm GaAs pHEMT technology

    International Nuclear Information System (INIS)

    Wu Chia-Song; Chang Chien-Huang; Liu Hsing-Chung; Lin Tah-Yeong; Wu Hsien-Ming

    2010-01-01

    This investigation explores a low-noise amplifier (LNA) with a coplanar waveguide (CPW) structure, in which a two-stage amplifier is associated with a cascade schematic circuit, implemented in 0.15-μm GaAs pseudomorphic high electron mobility transistor (pHEMT) technology in a Ka-band (26.5-40.0 GHz) microwave monolithic integrated circuit (MMIC). The experimental results demonstrate that the proposed LNA has a peak gain of 12.53 dB at 30 GHz and a minimum noise figure of 3.3 dB at 29.5 GHz, when biased at a V ds of 2 V and a V gs of -0.6 V with a drain current of 16 mA in the circuit. The results show that the millimeter-wave LNA with coplanar waveguide structure has a higher gain and wider bandwidth than a conventional circuit. Finally, the overall LNA characterization exhibits high gain and low noise, indicating that the LNA has a compact circuit and favorable RF characteristics. The strong RF character exhibited by the LNA circuit can be used in millimeter-wave circuit applications. (semiconductor integrated circuits)

  13. Demonstration of Multi-Gbps Data Rates at Ka-Band Using Software-Defined Modem and Broadband High Power Amplifier for Space Communications

    Science.gov (United States)

    Simons, Rainee N.; Wintucky, Edwin G.; Landon, David G.; Sun, Jun Y.; Winn, James S.; Laraway, Stephen; McIntire, William K.; Metz, John L.; Smith, Francis J.

    2011-01-01

    The paper presents the first ever research and experimental results regarding the combination of a software-defined multi-Gbps modem and a broadband high power space amplifier when tested with an extended form of the industry standard DVB-S2 and LDPC rate 9/10 FEC codec. The modem supports waveforms including QPSK, 8-PSK, 16-APSK, 32-APSK, 64-APSK, and 128-QAM. The broadband high power amplifier is a space qualified traveling-wave tube (TWT), which has a passband greater than 3 GHz at 33 GHz, output power of 200 W and efficiency greater than 60 percent. The modem and the TWTA together enabled an unprecedented data rate at 20 Gbps with low BER of 10(exp -9). The presented results include a plot of the received waveform constellation, BER vs. E(sub b)/N(sub 0) and implementation loss for each of the modulation types tested. The above results when included in an RF link budget analysis show that NASA s payload data rate can be increased by at least an order of magnitude (greater than 10X) over current state-of-practice, limited only by the spacecraft EIRP, ground receiver G/T, range, and available spectrum or bandwidth.

  14. High Efficiency Ka-Band Spatial Combiner

    Directory of Open Access Journals (Sweden)

    D. Passi

    2014-12-01

    Full Text Available A Ka-Band, High Efficiency, Small Size Spatial Combiner (SPC is proposed in this paper, which uses an innovatively matched quadruple Fin Lines to microstrip (FLuS transitions. At the date of this paper and at the Author's best knowledge no such FLuS innovative transitions have been reported in literature before. These transitions are inserted into a WR28 waveguide T-junction, in order to allow the integration of 16 Monolithic Microwave Integrated Circuit (MMIC Solid State Power Amplifiers (SSPA's. A computational electromagnetic model using the finite elements method has been implemented. A mean insertion loss of 2 dB is achieved with a return loss better the 10 dB in the 31-37 GHz bandwidth.

  15. Fade Mitigation Techniques at Ka-Band

    Science.gov (United States)

    Dissanayake, Asoka (Editor)

    1996-01-01

    Rain fading is the dominant propagation impairment affecting Ka-band satellite links and rain fade mitigation is a key element in the design of Ka-band satellite networks. Some of the common fade mitigation techniques include: power control, diversity, adaptive coding, and resource sharing. The Advanced Communications Technology Satellite (ACTS) provides an excellent opportunity to develop and test Ka-band rain impairment amelioration techniques. Up-link power control and diversity are discussed in this paper.

  16. Deployable Ka-Band Reflectarray, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — Tyvak, in collaboration with UCLA, proposes a novel approach to the challenge of creating a large reflector for Ka-band high data rate links. We propose to attach...

  17. Mars Global Surveyor Ka-Band Frequency Data Analysis

    Science.gov (United States)

    Morabito, D.; Butman, S.; Shambayati, S.

    2000-01-01

    The Mars Global Surveyor (MGS) spacecraft, launched on November 7, 1996, carries an experimental space-to-ground telecommunications link at Ka-band (32 GHz) along with the primary X-band (8.4 GHz) downlink. The signals are simultaneously transmitted from a 1.5-in diameter parabolic high gain antenna (HGA) on MGS and received by a beam-waveguide (BWG) R&D 34-meter antenna located in NASA's Goldstone Deep Space Network (DSN) complex near Barstow, California. The projected 5-dB link advantage of Ka-band relative to X-band was confirmed in previous reports using measurements of MGS signal strength data acquired during the first two years of the link experiment from December 1996 to December 1998. Analysis of X-band and Ka-band frequency data and difference frequency (fx-fka)/3.8 data will be presented here. On board the spacecraft, a low-power sample of the X-band downlink from the transponder is upconverted to 32 GHz, the Ka-band frequency, amplified to I-W using a Solid State Power Amplifier, and radiated from the dual X/Ka HGA. The X-band signal is amplified by one of two 25 W TWTAs. An upconverter first downconverts the 8.42 GHz X-band signal to 8 GHz and then multiplies using a X4 multiplier producing the 32 GHz Ka-band frequency. The frequency source selection is performed by an RF switch which can be commanded to select a VCO (Voltage Controlled Oscillator) or USO (Ultra-Stable Oscillator) reference. The Ka-band frequency can be either coherent with the X-band downlink reference or a hybrid combination of the USO and VCO derived frequencies. The data in this study were chosen such that the Ka-band signal is purely coherent with the X-band signal, that is the downconverter is driven by the same frequency source as the X-band downlink). The ground station used to acquire the data is DSS-13, a 34-meter BWG antenna which incorporates a series of mirrors inside beam waveguide tubes which guide the energy to a subterranean pedestal room, providing a stable environment

  18. Ka-band waveguide rotary joint

    KAUST Repository

    Yevdokymov, Anatoliy; Sirenko, Kostyantyn; Kryzhanovskiy, Volodymyr; Pazynin, Vadim

    2013-01-01

    The authors present a design of a waveguide rotary joint operating in Ka-band with central frequency of 33 GHz, which also acts as an antenna mount. The main unit consists of two flanges with a clearance between them; one of the flanges has three

  19. Ka-Band, Multi-Gigabit-Per-Second Transceiver

    Science.gov (United States)

    Simons, Rainee N.; Wintucky, Edwin G.; Smith, Francis J.; Harris, Johnny M.; Landon, David G.; Haddadin, Osama S.; McIntire, William K.; Sun, June Y.

    2011-01-01

    A document discusses a multi-Gigabit-per-second, Ka-band transceiver with a software-defined modem (SDM) capable of digitally encoding/decoding data and compensating for linear and nonlinear distortions in the end-to-end system, including the traveling-wave tube amplifier (TWTA). This innovation can increase data rates of space-to-ground communication links, and has potential application to NASA s future spacebased Earth observation system. The SDM incorporates an extended version of the industry-standard DVB-S2, and LDPC rate 9/10 FEC codec. The SDM supports a suite of waveforms, including QPSK, 8-PSK, 16-APSK, 32- APSK, 64-APSK, and 128-QAM. The Ka-band and TWTA deliver an output power on the order of 200 W with efficiency greater than 60%, and a passband of at least 3 GHz. The modem and the TWTA together enable a data rate of 20 Gbps with a low bit error rate (BER). The payload data rates for spacecraft in NASA s integrated space communications network can be increased by an order of magnitude (>10 ) over current state-of-practice. This innovation enhances the data rate by using bandwidth-efficient modulation techniques, which transmit a higher number of bits per Hertz of bandwidth than the currently used quadrature phase shift keying (QPSK) waveforms.

  20. Ka-band waveguide rotary joint

    KAUST Repository

    Yevdokymov, Anatoliy

    2013-04-11

    The authors present a design of a waveguide rotary joint operating in Ka-band with central frequency of 33 GHz, which also acts as an antenna mount. The main unit consists of two flanges with a clearance between them; one of the flanges has three circular choke grooves. Utilisation of three choke grooves allows larger operating clearance. Two prototypes of the rotary joint have been manufactured and experimentally studied. The observed loss is from 0.4 to 0.8 dB in 1.5 GHz band.

  1. Ka-band Technologies for Small Spacecraft Communications via Relays and Direct Data Downlink

    Science.gov (United States)

    Budinger, James M.; Niederhaus, Charles; Reinhart, Richard; Downey, Joe; Roberts, Anthony

    2016-01-01

    As the scientific capabilities and number of small spacecraft missions in the near Earth region increase, standard yet configurable user spacecraft terminals operating in Ka-band are needed to lower mission cost and risk and enable significantly higher data return than current UHF or S-band terminals. These compact Ka-band terminals are intended to operate with both the current and next generation of Ka-band relay satellites and via direct data communications with near Earth tracking terminals. This presentation provides an overview of emerging NASA-sponsored and commercially provided technologies in software defined radios (SDRs), transceivers, and electronically steered antennas that will enable data rates from hundreds of kbps to over 1 Gbps and operate in multiple frequency bands (such as S- and X-bands) and expand the use of NASA's common Ka-bands frequencies: 22.55-23.15 GHz for forward data or uplink; and 25.5-27.0 GHz for return data or downlink. Reductions in mass, power and volume come from integration of multiple radio functions, operations in Ka-band, high efficiency amplifiers and receivers, and compact, flat and vibration free electronically steered narrow beam antennas for up to + 60 degrees field of regard. The software defined near Earth space transceiver (SD-NEST) described in the presentation is intended to be compliant with NASA's space telecommunications radio system (STRS) standard for communications waveforms and hardware interoperability.

  2. Linear Distributed GaN MMIC Power Amplifier with Improved Power-added Efficiency

    Science.gov (United States)

    2017-03-01

    QPSK LTE waveform, the ACPR1improved by ~10 dBc at average output power of 23 dBm, without digital pre-distortion. Keywords: GaN, linear amplifiers...wideband amplifier, OIP3, LTE Introduction RF communications with spectral efficiency utilizes complex modulation schemes that require amplifier...wideband amplifiers remain. In this paper, we report on the measured CW performance of a multi-octave (100 MHz ‒ 8 GHz) GaN MMIC NDPA fabricated with

  3. 5 Watt GaN HEMT Power Amplifier for LTE

    Directory of Open Access Journals (Sweden)

    K. Niotaki

    2014-04-01

    Full Text Available This work presents the design and implementation of a stand-alone linear power amplifier at 2.4 GHz with high output power. A GaN HEMT transistor is selected for the design and implementation of the power amplifier. The device exhibits a gain of 11.7 dB and a drain efficiency of 39% for an output power of 36.7 dBm at 2.4 GHz for an input power of 25dBm. The carrier to intermodulation ratio is better than 25 dB for a two tone input signal of 25 dBm of total power and a spacing of 5 MHz. The fabricated device is also tested with LTE input signals of different bandwidths (5MHz to 20MHz.

  4. Deep-Space Ka-Band Flight Experience

    Science.gov (United States)

    Morabito, D. D.

    2017-11-01

    Lower frequency bands have become more congested in allocated bandwidth as there is increased competition between flight projects and other entities. Going to higher frequency bands offers significantly more bandwidth, allowing for the use of much higher data rates. However, Ka-band is more susceptible to weather effects than lower frequency bands currently used for most standard downlink telemetry operations. Future or prospective flight projects considering deep-space Ka-band (32-GHz) telemetry data links have expressed an interest in understanding past flight experience with received Ka-band downlink performance. Especially important to these flight projects is gaining a better understanding of weather effects from the experience of current or past missions that operated Ka-band radio systems. We will discuss the historical flight experience of several Ka-band missions starting from Mars Observer in 1993 up to present-day deep-space missions such as Kepler. The study of historical Ka-band flight experience allows one to recommend margin policy for future missions. Of particular interest, we will review previously reported-on flight experience with the Cassini spacecraft Ka-band radio system that has been used for radio science investigations as well as engineering studies from 2004 to 2015, when Cassini was in orbit around the planet Saturn. In this article, we will focus primarily on the Kepler spacecraft Ka-band link, which has been used for operational telemetry downlink from an Earth trailing orbit where the spacecraft resides. We analyzed the received Ka-band signal level data in order to characterize link performance over a wide range of weather conditions and as a function of elevation angle. Based on this analysis of Kepler and Cassini flight data, we found that a 4-dB margin with respect to adverse conditions ensures that we achieve at least a 95 percent data return.

  5. Deep space propagation experiments at Ka-band

    Science.gov (United States)

    Butman, Stanley A.

    1990-01-01

    Propagation experiments as essential components of the general plan to develop an operational deep space telecommunications and navigation capability at Ka-band (32 to 35 GHz) by the end of the 20th century are discussed. Significant benefits of Ka-band over the current deep space standard X-band (8.4 GHz) are an improvement of 4 to 10 dB in telemetry capacity and a similar increase in radio navigation accuracy. Propagation experiments are planned on the Mars Observer Mission in 1992 in preparation for the Cassini Mission to Saturn in 1996, which will use Ka-band in the search for gravity waves as well as to enhance telemetry and navigation at Saturn in 2002. Subsequent uses of Ka-band are planned for the Solar Probe Mission and the Mars Program.

  6. Ka-Band MMIC Subarray Technology Program (Ka-Mist)

    Science.gov (United States)

    Pottinger, W.

    1995-01-01

    Ka-band monolithic microwave integrated circuit (MMIC) arrays have been considered as having high potential for increasing the capability of space, aircraft, and land mobile communication systems in terms of scan performance, data rate, link margin, and flexibility while offering a significant reduction in size, weight, and power consumption. Insertion of MMIC technology into antenna systems, particularly at millimeter wave frequencies using low power and low noise amplifiers in closed proximity to the radiating elements, offers a significant improvement in the array transmit efficiency, receive system noise figure, and overall array reliability. Application of active array technology also leads to the use of advanced beamforming techniques that can improve beam agility, diversity, and adaptivity to complex signal environments. The objective of this program was to demonstrate the technical feasibility of the 'tile' array packaging architecture at EHF via the insertion of 1990 MMIC technology into a functional tile array or subarray module. The means test of this objective was to demonstrate and deliver to NASA a minimum of two 4 x 4 (16 radiating element) subarray modules operating in a transmit mode at 29.6 GHz. Available (1990) MMIC technology was chosen to focus the program effort on the novel interconnect schemes and packaging requirements rather than focusing on MMIC development. Major technical achievements of this program include the successful integration of two 4 x 4 subarray modules into a single antenna array. This 32 element array demonstrates a transmit EIRP of over 300 watts yielding an effective directive power gain in excess of 55 dB at 29.63 GHz. The array has been actively used as the transmit link in airborne/terrestrial mobile communication experiments accomplished via the ACTS satellite launched in August 1993.

  7. Additive manufacturing of Ka-band antennas for wireless communications

    DEFF Research Database (Denmark)

    Armendariz, Unai; Rommel, Simon; Rodríguez Páez, Juan Sebastián

    2016-01-01

    This paper presents the design and fabrication of WR-28 waveguide horn antennas operating in the Ka-band frequency range between 26.5 GHz and 40 GHz through 3D printing. Three different antennas are fabricated from polylactide acid filaments in conductive and non-conductive variants; the latter i...

  8. A High-Efficiency 100-W GaN Three-Way Doherty Amplifier for Base-Station Applications

    NARCIS (Netherlands)

    Pelk, M.J.; Neo, W.C.E.; Gajadharsing, J.R.; Pengelly, R.S.; De Vreede, L.C.N.

    2008-01-01

    A three-way Doherty 100-W GaN base-station power amplifier at 2.14 GHz is presented. Simple, but accurate design equations for the output power combiner of the amplifier are introduced. Mixed-signal techniques are utilized for uncompromised control of the amplifier stages to optimize efficiency, as

  9. Radar Waveform Pulse Analysis Measurement System for High-Power GaN Amplifiers

    Science.gov (United States)

    Thrivikraman, Tushar; Perkovic-Martin, Dragana; Jenabi, Masud; Hoffman, James

    2012-01-01

    This work presents a measurement system to characterize the pulsed response of high-power GaN amplifiers for use in space-based SAR platforms that require very strict amplitude and phase stability. The measurement system is able to record and analyze data on three different time scales: fast, slow, and long, which allows for greater detail of the mechanisms that impact amplitude and phase stability. The system is fully automated through MATLAB, which offers both instrument control capability and in-situ data processing. To validate this system, a high-power GaN HEMT amplifier operated in saturation was characterized. The fast time results show that variations to the amplitude and phase are correlated to DC supply transients, while long time characteristics are correlated to temperature changes.

  10. Ka-band SAR interferometry studies for the SWOT mission

    Science.gov (United States)

    Fernandez, D. E.; Fu, L.; Rodriguez, E.; Hodges, R.; Brown, S.

    2008-12-01

    The primary objective of the NRC Decadal Survey recommended SWOT (Surface Water and Ocean Topography) Mission is to measure the water elevation of the global oceans, as well as terrestrial water bodies (such as rivers, lakes, reservoirs, and wetlands), to answer key scientific questions on the kinetic energy of ocean circulation, the spatial and temporal variability of the world's surface freshwater storage and discharge, and to provide societal benefits on predicting climate change, coastal zone management, flood prediction, and water resources management. The SWOT mission plans to carry the following suite of microwave instruments: a Ka-band interferometer, a dual-frequency nadir altimeter, and a multi-frequency water-vapor radiometer dedicated to measuring wet tropospheric path delay to correct the radar measurements. We are currently funded by the NASA Earth Science Technology Office (ESTO) Instrument Incubator Program (IIP) to reduce the risk of the main technological drivers of SWOT, by addressing the following technologies: the Ka-band radar interferometric antenna design, the on-board interferometric SAR processor, and the internally calibrated high-frequency radiometer. The goal is to significantly enhance the readiness level of the new technologies required for SWOT, while laying the foundations for the next-generation missions to map water elevation for studying Earth. The first two technologies address the challenges of the Ka-band SAR interferometry, while the high- frequency radiometer addresses the requirement for small-scale wet tropospheric corrections for coastal zone applications. In this paper, we present the scientific rational, need and objectives behind these technology items currently under development.

  11. A 500-600 MHz GaN power amplifier with RC-LC stability network

    Science.gov (United States)

    Ma, Xinyu; Duan, Baoxing; Yang, Yintang

    2017-08-01

    A 500-600 MHz high-efficiency, high-power GaN power amplifier is designed and realized on the basis of the push-pull structure. The RC-LC stability network is proposed and applied to the power amplifier circuit for the first time. The RC-LC stability network can significantly reduce the high gain out the band, which eliminates the instability of the power amplifier circuit. The developed power amplifier exhibits 58.5 dBm (700 W) output power with a 17 dB gain and 85% PAE at 500-600 MHz, 300 μs, 20% duty cycle. It has the highest PAE in P-band among the products at home and abroad. Project supported by the National Key Basic Research Program of China (No. 2014CB339901).

  12. Full Ka Band Waveguide-to-Microstrip Inline Transition Design

    Science.gov (United States)

    Li, Jianxing; Li, Lei; Qiao, Yu; Chen, Juan; Chen, Jianzhong; Zhang, Anxue

    2018-05-01

    In this paper, a compact and broadband inline waveguide-to-microstrip transition is proposed to cover the full Ka band. The transition can be segmented from the electric point of view into three building blocks, comprising a microstrip line to rectangular coaxial line, a wedged rectangular coaxial line to ridged waveguide, and a final tapered ridged waveguide impedance transformer to standard waveguide. Both good electrical performance and simple modular assembly without any soldering have been simultaneously obtained. The validation of the design concept has been conducted by numerical simulations and experimental measurements. The experimental results of a fabricated back-to-back transition prototype coincide with the simulated results. It shows that the proposed transition achieves good return loss of lower than 15.5 dB and low insertion loss with a fluctuation between 0.23 to 0.60 dB across the entire Ka band. Details of design considerations and operation mechanism as well as simulation and measurement results are presented.

  13. Miniaturized Ka-Band Dual-Channel Radar

    Science.gov (United States)

    Hoffman, James P.; Moussessian, Alina; Jenabi, Masud; Custodero, Brian

    2011-01-01

    Smaller (volume, mass, power) electronics for a Ka-band (36 GHz) radar interferometer were required. To reduce size and achieve better control over RFphase versus temperature, fully hybrid electronics were developed for the RF portion of the radar s two-channel receiver and single-channel transmitter. In this context, fully hybrid means that every active RF device was an open die, and all passives were directly attached to the subcarrier. Attachments were made using wire and ribbon bonding. In this way, every component, even small passives, was selected for the fabrication of the two radar receivers, and the devices were mounted relative to each other in order to make complementary components isothermal and to isolate other components from potential temperature gradients. This is critical for developing receivers that can track each other s phase over temperature, which is a key mission driver for obtaining ocean surface height. Fully hybrid, Ka-band (36 GHz) radar transmitter and dual-channel receiver were developed for spaceborne radar interferometry. The fully hybrid fabrication enables control over every aspect of the component selection, placement, and connection. Since the two receiver channels must track each other to better than 100 millidegrees of RF phase over several minutes, the hardware in the two receivers must be "identical," routed the same (same line lengths), and as isothermal as possible. This level of design freedom is not possible with packaged components, which include many internal passive, unknown internal connection lengths/types, and often a single orientation of inputs and outputs.

  14. X-Band GaN Power Amplifier MMIC with a Third Harmonic-Tuned Circuit

    Directory of Open Access Journals (Sweden)

    Kyung-Tae Bae

    2017-11-01

    Full Text Available This paper presents an X-band GaN HEMT power amplifier with a third harmonic-tuned circuit for a higher power density per area and a higher power-added efficiency (PAE using a 0.25 μm GaN HEMT process of WIN semiconductors, Inc. The optimum load impedances at the fundamental and third harmonic frequencies are extracted from load-pull simulations at the transistor’s extrinsic plane, including the drain-source capacitance and the series drain inductance. The third harmonic-tuned circuit is effectively integrated with the output matching circuit at the fundamental frequency, without complicating the whole output matching circuit. The input matching circuit uses a lossy matching scheme, which allows a good return loss and a simple LC low-pass circuit configuration. The fabricated power amplifier monolithic microwave integrated circuit (MMIC occupies an area of 13.26 mm2, and shows a linear gain of 20 dB or more, a saturated output power of 43.2~44.7 dBm, and a PAE of 35~37% at 8.5 to 10.5 GHz.

  15. Design of Ka-band antipodal finline mixer and detector

    International Nuclear Information System (INIS)

    Yao Changfei; Xu Jinping; Chen Mo

    2009-01-01

    This paper mainly discusses the analysis and design of a finline single-ended mixer and detector. In the circuit, for the purpose of eliminating high-order resonant modes and improving transition loss, metallic via holes are implemented along the mounting edge of the substrate embedded in the split-block of the WG-finline-microstrip transition. Meanwhile, a Ka band slow-wave and bandstop filter, which represents a reactive termination, is designed for the utilization of idle frequencies and operation frequencies energy. Full-wave analysis is carried out to optimize the input matching network of the mixer and the detector circuit using lumped elements to model the nonlinear diode. The exported S-matrix of the optimized circuit is used for conversion loss and voltage sensitivity analysis. The lowest measured conversion loss is 3.52 dB at 32.2 GHz; the conversion loss is flat and less than 5.68 dB in the frequency band of 29-34 GHz. The highest measured zero-bias voltage sensitivity is 1450 mV/mW at 38.6 GHz, and the sensitivity is better than 1000 mV/mW in the frequency band of 38-40 GHz.

  16. Rain Fade Compensation for Ka-Band Communications Satellites

    Science.gov (United States)

    Mitchell, W. Carl; Nguyen, Lan; Dissanayake, Asoka; Markey, Brian; Le, Anh

    1997-01-01

    This report provides a review and evaluation of rain fade measurement and compensation techniques for Ka-band satellite systems. This report includes a description of and cost estimates for performing three rain fade measurement and compensation experiments. The first experiment deals with rain fade measurement techniques while the second one covers the rain fade compensation techniques. The third experiment addresses a feedback flow control technique for the ABR service (for ATM-based traffic). The following conclusions were observed in this report; a sufficient system signal margin should be allocated for all carriers in a network, that is a fixed clear-sky margin should be typically in the range of 4-5 dB and should be more like 15 dB in the up link for moderate and heavy rain zones; to obtain a higher system margin it is desirable to combine the uplink power control technique with the technique that implements the source information rate and FEC code rate changes resulting in a 4-5 dB increase in the dynamic part of the system margin. The experiments would assess the feasibility of the fade measurements and compensation techniques, and ABR feedback control technique.

  17. Studying NASA's Transition to Ka-Band Communications for Low Earth Orbit

    Science.gov (United States)

    Chelmins, David T.; Reinhart, Richard C.; Mortensen, Dale; Welch, Bryan; Downey, Joseph; Evans, Michael

    2014-01-01

    As the S-band spectrum becomes crowded, future space missions will need to consider moving command and telemetry services to Ka-band. NASA's Space Communications and Navigation (SCaN) Testbed provides a software-defined radio (SDR) platform that is capable of supporting investigation of this service transition. The testbed contains two S-band SDRs and one Ka-band SDR. Over the past year, SCaN Testbed has demonstrated Ka-band communications capabilities with NASAs Tracking and Data Relay Satellite System (TDRSS) using both open- and closed-loop antenna tracking profiles. A number of technical areas need to be addressed for successful transition to Ka-band. The smaller antenna beamwidth at Ka-band increases the criticality of antenna pointing, necessitating closed loop tracking algorithms and new techniques for received power estimation. Additionally, the antenna pointing routines require enhanced knowledge of spacecraft position and attitude for initial acquisition, versus an S-band antenna. Ka-band provides a number of technical advantages for bulk data transfer. Unlike at S-band, a larger bandwidth may be available for space missions, allowing increased data rates. The potential for high rate data transfer can also be extended for direct-to-ground links through use of variable or adaptive coding and modulation. Specific examples of Ka-band research from SCaN Testbeds first year of operation will be cited, such as communications link performance with TDRSS, and the effects of truss flexure on antenna pointing.

  18. A Compact Two-Stage 120 W GaN High Power Amplifier for SweepSAR Radar Systems

    Science.gov (United States)

    Thrivikraman, Tushar; Horst, Stephen; Price, Douglas; Hoffman, James; Veilleux, Louise

    2014-01-01

    This work presents the design and measured results of a fully integrated switched power two-stage GaN HEMT high-power amplifier (HPA) achieving 60% power-added efficiency at over 120Woutput power. This high-efficiency GaN HEMT HPA is an enabling technology for L-band SweepSAR interferometric instruments that enable frequent repeat intervals and high-resolution imagery. The L-band HPA was designed using space-qualified state-of-the-art GaN HEMT technology. The amplifier exhibits over 34 dB of power gain at 51 dBm of output power across an 80 MHz bandwidth. The HPA is divided into two stages, an 8 W driver stage and 120 W output stage. The amplifier is designed for pulsed operation, with a high-speed DC drain switch operating at the pulsed-repetition interval and settles within 200 ns. In addition to the electrical design, a thermally optimized package was designed, that allows for direct thermal radiation to maintain low-junction temperatures for the GaN parts maximizing long-term reliability. Lastly, real radar waveforms are characterized and analysis of amplitude and phase stability over temperature demonstrate ultra-stable operation over temperature using integrated bias compensation circuitry allowing less than 0.2 dB amplitude variation and 2 deg phase variation over a 70 C range.

  19. High Rate User Ka-Band Phased Array Antenna Test Results

    Science.gov (United States)

    Caroglanian, Armen; Perko, Kenneth; Seufert, Steve; Dod, Tom; Warshowsky, Jay; Day, John H. (Technical Monitor)

    2001-01-01

    The High Rate User Phased Array Antenna (HRUPAA) is a Ka-Band planar phased array designed by the Harris Corporation for the NASA Goddard Space Flight Center. The HRUPAA permits a satellite to downlink data either to a ground station or through the Tracking and Data Relay Satellite System (TDRSS). The HRUPAA is scanned electronically by ground station / user satellite command over a 120 degree cone angle. The phased array has the advantage of not imparting attitude disturbances to the user spacecraft. The 288-element transmit-only array has distributed RF amplifiers integrated behind each of the printed patch antenna elements. The array has 33 dBW EIRP and is left-hand circularly polarized. An engineering model of a partially populated array has been developed and delivered to NASA Goddard Space Flight Center. This report deals with the testing of the engineering model at the Goddard Antenna Range near-field and compact range facilities. The antenna specifications are described first, followed by the test plan and test results.

  20. Ka-Band Electronically Steered CubeSat Antenna, Phase II

    Data.gov (United States)

    National Aeronautics and Space Administration — Kymeta Government Solutions (KGS) designed, analyzed, built, tested, and delivered a small, lightweight, low-cost, low-power electronically steered Ka-band prototype...

  1. Advances in Ka-Band Communication System for CubeSats and SmallSats

    Science.gov (United States)

    Kegege, Obadiah; Wong, Yen F.; Altunc, Serhat

    2016-01-01

    A study was performed that evaluated the feasibility of Ka-band communication system to provide CubeSat/SmallSat high rate science data downlink with ground antennas ranging from the small portable 1.2m/2.4m to apertures 5.4M, 7.3M, 11M, and 18M, for Low Earth Orbit (LEO) to Lunar CubeSat missions. This study included link analysis to determine the data rate requirement, based on the current TRL of Ka-band flight hardware and ground support infrastructure. Recent advances in Ka-band transceivers and antennas, options of portable ground stations, and various coverage distances were included in the analysis. The link/coverage analysis results show that Cubesat/Smallsat missions communication requirements including frequencies and data rates can be met by utilizing Near Earth Network (NEN) Ka-band support with 2 W and high gain (>6 dBi) antennas.

  2. A Ka-Band Celestial Reference Frame with Applications to Deep Space Navigation

    Science.gov (United States)

    Jacobs, Christopher S.; Clark, J. Eric; Garcia-Miro, Cristina; Horiuchi, Shinji; Sotuela, Ioana

    2011-01-01

    The Ka-band radio spectrum is now being used for a wide variety of applications. This paper highlights the use of Ka-band as a frequency for precise deep space navigation based on a set of reference beacons provided by extragalactic quasars which emit broadband noise at Ka-band. This quasar-based celestial reference frame is constructed using X/Ka-band (8.4/32 GHz) from fifty-five 24-hour sessions with the Deep Space Network antennas in California, Australia, and Spain. We report on observations which have detected 464 sources covering the full 24 hours of Right Ascension and declinations down to -45 deg. Comparison of this X/Ka-band frame to the international standard S/X-band (2.3/8.4 GHz) ICRF2 shows wRMS agreement of approximately 200 micro-arcsec in alpha cos(delta) and approximately 300 micro-arcsec in delta. There is evidence for systematic errors at the 100 micro-arcsec level. Known errors include limited SNR, lack of instrumental phase calibration, tropospheric refraction mis-modeling, and limited southern geometry. The motivation for extending the celestial reference frame to frequencies above 8 GHz is to access more compact source morphology for improved frame stability and to support spacecraft navigation for Ka-band based NASA missions.

  3. The Potential for a Ka-band (32 GHz) Worldwide VLBI Network

    Science.gov (United States)

    Jacobs, C. S.; Bach, U.; Colomer, F.; Garcia-Miro, C.; Gomez-Gonzalez, J.; Gulyaev, S.; Horiuchi, S.; Ichikawa, R.; Kraus, A.; Kronschnabl, G.; hide

    2012-01-01

    Ka-band (32 GHz, 9mm) Very Long Baseline Interferometric (VLBI) networking has now begun and has tremendous potential for expansion over the next few years. Ka-band VLBI astrometry from NASA's Deep Space Network has already developed a catalog of 470 observable sources with highly accurate positions. Now, several antennas worldwide are planning or are considering adding Ka-band VLBI capability. Thus, there is now an opportunity to create a worldwide Ka-band network with potential for high resolution imaging and astrometry. With baselines approaching a Giga-lambda, a Ka-band network would be able to probe source structure at the nano-radian (200 as) level ( 100X better than Hubble) and thus gain insight into the astrophysics of the most compact regions of emission in active galactic nuclei. We discuss the advantages of Ka-band, show the known sources and candidates, simulate projected baseline (uv) coverage, and discuss potential radio frequency feeds. The combination of these elements demonstrates the feasibility of a worldwide Ka network within the next few years!

  4. Design and Characterization of a 6 W GaN HEMT Microwave Power Amplifier with Digital Predistortion Linearization

    OpenAIRE

    Mitrevski, Dragan

    2011-01-01

    In this thesis, characterization of a 6W GaN HEMT power amplifier for optimal operating conditions through load pull simulations and measurements is investigated.The purpose is to find source and load impedances to achieve for instance maximum efficiency and maximum output power, and investigate whether thesimulated results can be replicated in a measurement setup. Simulations show that when matching for maximum output power, a peak output power of 13W is achieved, while in 1 dB compression, ...

  5. Power-Combined GaN Amplifier with 2.28-W Output Power at 87 GHz

    Science.gov (United States)

    Fung, King Man; Ward, John; Chattopadhyay, Goutam; Lin, Robert H.; Samoska, Lorene A.; Kangaslahti, Pekka P.; Mehdi, Imran; Lambrigtsen, Bjorn H.; Goldsmith, Paul F.; Soria, Mary M.; hide

    2011-01-01

    Future remote sensing instruments will require focal plane spectrometer arrays with higher resolution at high frequencies. One of the major components of spectrometers are the local oscillator (LO) signal sources that are used to drive mixers to down-convert received radio-frequency (RF) signals to intermediate frequencies (IFs) for analysis. By advancing LO technology through increasing output power and efficiency, and reducing component size, these advances will improve performance and simplify architecture of spectrometer array systems. W-band power amplifiers (PAs) are an essential element of current frequency-multiplied submillimeter-wave LO signal sources. This work utilizes GaN monolithic millimeter-wave integrated circuit (MMIC) PAs developed from a new HRL Laboratories LLC 0.15- m gate length GaN semiconductor transistor. By additionally waveguide power combining PA MMIC modules, the researchers here target the highest output power performance and efficiency in the smallest volume achievable for W-band.

  6. Dynamic optical fiber delivery of Ka-band packet transmissions for wireless access networks

    DEFF Research Database (Denmark)

    Rodríguez Páez, Juan Sebastián; Madsen, Peter; Tafur Monroy, Idelfonso

    2017-01-01

    A Reconfigurable Radio Access Unit is presented and experimentally demonstrated. In the unit, an optical switching system is set to dynamically deliver different packets to different points in the network. The packets are transmitted wirelesslty on the Ka-band (26–40 GHz), achieving BER values...

  7. Evaluation and Performance Analysis of 3D Printing Technique for Ka-Band Antenna Production

    DEFF Research Database (Denmark)

    Armendariz, Unai; Rommel, Simon; Rodríguez Páez, Juan Sebastián

    2016-01-01

    This paper presents the design and fabrication of 3D printed WR-28 waveguide horn antennas operating in the Ka-band frequency range between 26.5GHz and 40GHz. Three antennas are fabricated from polylactide acid filaments in conductive and non-conductive variants; the latter is covered...

  8. Design considerations on a sparse array antenna for Ka-band spaceborne SAR applications

    NARCIS (Netherlands)

    Jacobs, S.; Bekers, D.; Monni, S.; Otten, M.; Van Rossum, W.; Gerini, G.; Germani, C.; Fortini, D.; Toso, G.

    2015-01-01

    This contribution addresses the problem of designing a sparse active array antenna for spaceborne SAR applications at Ka-band. The main driver for the design is limiting the recurring manufacturing costs associated to the number of active modules, while preserving main performance and insuring a

  9. Reconfigurable phased antenna array for extending cubesat operations to Ka-band: Design and feasibility

    Science.gov (United States)

    Buttazzoni, G.; Comisso, M.; Cuttin, A.; Fragiacomo, M.; Vescovo, R.; Vincenti Gatti, R.

    2017-08-01

    Started as educational tools, CubeSats have immediately encountered the favor of the scientific community, subsequently becoming viable platforms for research and commercial applications. To ensure competitive data rates, some pioneers have started to explore the usage of the Ka-band beside the conventional amateur radio frequencies. In this context, this study proposes a phased antenna array design for Ka-band downlink operations consisting of 8×8 circularly polarized subarrays of microstrip patches filling one face of a single CubeSat unit. The conceived structure is developed to support 1.5 GHz bandwidth and dual-task missions, whose feasibility is verified by proper link budgets. The dual-task operations are enabled by a low-complexity phase-only control algorithm that provides pattern reconfigurability in order to satisfy both orbiting and intersatellite missions, while remaining adherent to the cost-effective CubeSat paradigm.

  10. Ka-band microwave generation using the Smith-Purcell effect

    International Nuclear Information System (INIS)

    Ekdahl, C.A.; Davis, H.A.

    1983-01-01

    The CERETRON microwave generator concept relies on the conversion of intense relativistic electron beam (REB) energy into highpower microwave emission through the Smith-Purcell effect. We report initial results from experiments with the production of Ka-band Smith-Purcell radiation generated by a 50-kA, 2.8-MeV beam propagated through a cylindrical transmission grating with lambda 0 = 1 cm. These experiments were performed without a quasi-optical resonator, and the output was limited by breakdown of the grating and by limited access through the 90-kG magnet coil. Nevertheless, the measured power output from these initial experiments was about 7 kW in the Ka band

  11. Ka-band InSAR Imaging and Analysis Based on IMU Data

    Directory of Open Access Journals (Sweden)

    Shi Jun

    2014-02-01

    Full Text Available Compared with other bands, the millimeter wave Interferometric Synthetic Aperture Radar (InSAR has high accuracy and small size, which is a hot topic in InSAR research. On the other hand, shorter wavelength causes difficulties in 2D imaging and interferometric phase extraction. In this study, the imaging and phase performance of the streaming Back Projection (BP method combined with IMU data are analyzed and discussed on the basis of actual Ka-band InSAR data. It is found that because the wavelength of the Ka-band is short, it is more sensitive to the antenna phase-center history. To ensure the phase-preserving capacity, the IMU data must be used with accurate motion error compensation. Furthermore, during data processing, we verify the flat-earth-removing capacity of the BP algorithm that calculates and compensates the master and slave antenna phase centers individually.

  12. A K/Ka band radiating element for Tx/Rx phased array

    KAUST Repository

    Sandhu, Ali Imran; Arnieri, E.; Amendola, G.; Boccia, L.; Meniconi, E.; Ziegler, V.

    2017-01-01

    The paper presents a K/Ka band radiating element for TX/RX phased arrays. Dual band operations is obtained using a single radiating surface: a novel radiator is adopted and placed in a configuration in which dual band and single band elements are interleaved. The array elements are optimized to scan the beam in excess of 50° in both bands. A subarray with 49 Rx elements and 105 Tx elements was built and measured confirming the results obtained in simulations.

  13. A K/Ka band radiating element for Tx/Rx phased array

    KAUST Repository

    Sandhu, Ali Imran

    2017-01-20

    The paper presents a K/Ka band radiating element for TX/RX phased arrays. Dual band operations is obtained using a single radiating surface: a novel radiator is adopted and placed in a configuration in which dual band and single band elements are interleaved. The array elements are optimized to scan the beam in excess of 50° in both bands. A subarray with 49 Rx elements and 105 Tx elements was built and measured confirming the results obtained in simulations.

  14. Use of the 37-38 GHz and 40-40.5 GHz Ka-bands for Deep Space Communications

    Science.gov (United States)

    Morabito, David; Hastrup, Rolf

    2004-01-01

    This paper covers a wide variety of issues associated with the implementation and use of these frequency bands for deep space communications. Performance issues, such as ground station pointing stability, ground antenna gain, antenna pattern, and propagation effects such as due to atmospheric, charged-particle and space loss at 37 GHz, will be addressed in comparison to the 32 GHz Ka-band deep space allocation. Issues with the use of and competition for this spectrum also will be covered. The state of the hardware developed (or proposed) for operating in this frequency band will be covered from the standpoint of the prospects for achieving higher data rates that could be accommodated in the available bandwidth. Hardware areas to be explored include modulators, digital-to-analog converters, filters, power amplifiers, receivers, and antennas. The potential users of the frequency band will be explored as well as their anticipated methods to achieve the potential high data rates and the implications of the competition for bandwidth.

  15. Miniaturized UHF, S-, and Ka-band RF MEMS Filters for Small Form Factor, High Performance EVA Radio, Phase II

    Data.gov (United States)

    National Aeronautics and Space Administration — In Phase II of this SBIR, Harmonic Devices (HDI) proposes to develop miniaturized MEMS filters at UHF, S-band and Ka-band to address the requirements of NASA's...

  16. Transmission characteristic of graphene/TiO2 paper measured at Ka-band

    Science.gov (United States)

    Agusu, La; Mitsudo, Seitaro; Ahmad, La Ode; Herdianto, Fujii, Yutaka; Ishikawa, Yuya; Furuya, Takahashi; Ramadhan, La Ode Ahmad Nur

    2017-01-01

    The commercial telecommunication system in future would explore the electromagnetic spectrum with higher frequency than used now, because it requires higher speed of transmission data. Using the millimeter waves (mmW) with frequency ranging from 30 to 300 GHz, such requirement could be fulfilled. The upcoming 5G cellular technology is expected to use frequency 30 GHz or higher. Then materials with a specific characteristic at the mmW range are interesting to be explored and investigated. Here, we report the synthesis process of graphene/TiO2 deposited on paper and their transmission characteristics to the electromagnetic energy at frequency 27-40 GHz (Ka-Band). The reduced graphene oxide (rGO) was synthesized by a modified Hummers method with introduction of microwave irradiation in the process. rGO and TiO2 were mixed in ethanol solution and deposited on the paper by a spraying technique. Transmission coefficient of electromagnetic wave energy at Ka-Band was measured by using the millimeter vector network analyzer. Conductivity of rGO is 1.89 Scm-1 and for the graphene/TiO2 with TiO2 content is up to 50%, conductivity is down to Scm-1 Graphene/TiO2 layer with thickness of 60).lm and TiO2 loading up to 25% can has the transmission coefficient of -4 dB at the middle frequency of 31 GHz and bandwidth of 2.2 GHz. This can be useful as the electromagnetic interference shielding material at Ka-band.

  17. Ka Band Phase Locked Loop Oscillator Dielectric Resonator Oscillator for Satellite EHF Band Receiver

    Directory of Open Access Journals (Sweden)

    S. Coco

    2008-01-01

    Full Text Available This paper describes the design and fabrication of a Ka Band PLL DRO having a fundamental oscillation frequency of 19.250 GHz, used as local oscillator in the low-noise block of a down converter (LNB for an EHF band receiver. Apposite circuital models have been created to describe the behaviour of the dielectric resonator and of the active component used in the oscillator core. The DRO characterization and measurements have shown very good agreement with simulation results. A good phase noise performance is obtained by using a very high Q dielectric resonator.

  18. Proposal for a Joint NASA/KSAT Ka-band RF Propagation Terminal at Svalbard, Norway

    Science.gov (United States)

    Volosin, Jeffrey; Acosta, Roberto; Nessel, James; McCarthy, Kevin; Caroglanian, Armen

    2010-01-01

    This slide presentation discusses the placement of a Ka-band RF Propagation Terminal at Svalbard, Norway. The Near Earth Network (NEN) station would be managed by Kongsberg Satellite Services (KSAT) and would benefit NASA and KSAT. There are details of the proposed NASA/KSAT campaign, and the responsibilities each would agree to. There are several reasons for the placement, a primary reason is comparison with the Alaska site, Based on climatological similarities/differences with Alaska, Svalbard site expected to have good radiometer/beacon agreement approximately 99% of time.

  19. Advanced mobile satellite communications using COMETS satellite in MM-wave and Ka-band

    Science.gov (United States)

    Ohmori, Shingo; Isobe, Shunkichi; Takeuchi, Makoto; Naito, Hideyuki

    1993-01-01

    Early in the 21st century, the demand for personal communications using mobile, hand-held, and VSAT terminals will rapidly increase. In a future system, many different types of services should be provided with one-hop connection. The Communications Research Laboratory (CRL) has studied a future advanced mobile satellite communications system using millimeter wave and Ka band. In 1990, CRL started the Communications and Broadcasting Engineering Test Satellite (COMETS) project. The satellite has been developed in conjunction with NASDA and will be launched in 1997. This paper describes the COMETS payload configuration and the experimental system for the advanced mobile communications mission.

  20. Analysis of Standards Efficiency in Digital Television Via Satellite at Ku and Ka Bands

    Directory of Open Access Journals (Sweden)

    Landeros-Ayala Salvador

    2013-06-01

    Full Text Available In this paper, an analysis on the main technical features of digital television standards for satellite transmission is carried out. Based on simulations and link budgets, the standard with the best operational performance is defined, based on simulations and link budget analysis, as well as a comparative efficiency analysis is conducted for the Ku and Ka bands for both transparent and regenerative transponders in terms of power, bandwidth, information rate and link margin, including clear sky, uplink rain, downlink rain and rain in both.

  1. Broadband 0.25-um Gallium Nitride (GaN) Power Amplifier Designs

    Science.gov (United States)

    2017-08-14

    networking, and sensor systems of interest to Department of Defense applications, particularly for next-generation radar systems. Broadband, efficient, high...simulations of MMIC (3–6 GHz, 28 V/180 mA) 1.75-mm HEMT power amplifier ............................................... 13 Fig. 20 Simple schematic...design simple , a single 1.75-mm high-electron-mobility transistor (HEMT) was used for a preliminary ideal design of the broadband power amplifier

  2. Ferroelectric switch for a high-power Ka-band active pulse compressor

    Energy Technology Data Exchange (ETDEWEB)

    Hirshfield, Jay L. [Omega-P, Inc., New Haven, CT (United States)

    2013-12-18

    Results are presented for design of a high-power microwave switch for operation at 34.3 GHz, intended for use in an active RF pulse compressor. The active element in the switch is a ring of ferroelectric material, whose dielectric constant can be rapidly changed by application of a high-voltage pulse. As envisioned, two of these switches would be built into a pair of delay lines, as in SLED-II at SLAC, so as to allow 30-MW μs-length Ka-band pulses to be compressed in time by a factor-of-9 and multiplied in amplitude to generate 200 MW peak power pulses. Such high-power pulses could be used for testing and evaluation of high-gradient mm-wave accelerator structures, for example. Evaluation of the switch design was carried out with an X-band (11.43 GHz) prototype, built to incorporate all the features required for the Ka-band version.

  3. A novel Ka-band coaxial transit-time oscillator with a four-gap buncher

    Energy Technology Data Exchange (ETDEWEB)

    Song, Lili; He, Juntao; Ling, Junpu [College of Optoelectronic Science and Engineering, National University of Defense Technology, Changsha 410073 (China)

    2015-05-15

    A novel Ka-band coaxial transit-time oscillator (TTO) with a four-gap buncher is proposed and investigated. Simulation results show that an output power of 1.27 GW and a frequency of 26.18 GHz can be achieved with a diode voltage of 447 kV and a beam current of 7.4 kA. The corresponding power efficiency is 38.5%, and the guiding magnetic field is 0.6 T. Studies and analysis indicate that a buncher with four gaps can modulate the electron beam better than the three-gap buncher in such a Ka-band TTO. Moreover, power efficiency increases with the coupling coefficient between the buncher and the extractor. Further simulation demonstrates that power efficiency can reach higher than 30% with a guiding magnetic field of above 0.5 T. Besides, the power efficiency exceeds 30% in a relatively large range of diode voltage from 375 kV to 495 kV.

  4. Electromagnetic Properties of Graphene-like Films in Ka-Band

    Directory of Open Access Journals (Sweden)

    Sofia Voronovich

    2014-05-01

    Full Text Available We studied electromagnetic properties of pyrolytic carbon (PyC films with thicknesses from 9 nm to 110 nm. The PyC films consisted of randomly oriented and intertwined graphene flakes with a typical size of a few nanometers were synthesized by chemical vapor deposition (CVD at 1100 °C on a quartz substrate. The reflectance and transmittance of these films in Ka-band, 26–37 GHz, were studied both experimentally and theoretically. The discovered remarkably high absorption loss of up to 50% of incident power, along with chemical stability, makes PyC films attractive for electromagnetic (EM interference shielding in space and airspace communication systems, as well as in portable electronic devices occupying this frequency slot. Since, in practical applications, the PyC film should be employed for coating of dielectric surfaces, two important issues to be addressed are: (i which side (front or back of the substrate should be covered to ensure maximum absorption losses; and (ii the frequency dependence of absorbance/transmittance/reflectance of binary PyC/quartz structures in the Ka-band.

  5. Thermal Deformation and RF Performance Analyses for the SWOT Large Deployable Ka-Band Reflectarray

    Science.gov (United States)

    Fang, H.; Sunada, E.; Chaubell, J.; Esteban-Fernandez, D.; Thomson, M.; Nicaise, F.

    2010-01-01

    A large deployable antenna technology for the NASA Surface Water and Ocean Topography (SWOT) Mission is currently being developed by JPL in response to NRC Earth Science Tier 2 Decadal Survey recommendations. This technology is required to enable the SWOT mission due to the fact that no currently available antenna is capable of meeting SWOT's demanding Ka-Band remote sensing requirements. One of the key aspects of this antenna development is to minimize the effect of the on-orbit thermal distortion to the antenna RF performance. An analysis process which includes: 1) the on-orbit thermal analysis to obtain the temperature distribution; 2) structural deformation analysis to get the geometry of the antenna surface; and 3) the RF performance with the given deformed antenna surface has been developed to accommodate the development of this antenna technology. The detailed analysis process and some analysis results will be presented and discussed by this paper.

  6. Radiating Elements for Shared Aperture Tx/Rx Phased Arrays at K/Ka Band

    KAUST Repository

    Sandhu, Ali Imran; Arnieri, E.; Amendola, Giandomenico; Boccia, L.; Meniconi, Erika; Ziegler, Volker

    2016-01-01

    A dual band, Tx/Rx, self-diplexing phased array is presented. The antenna has been designed to cover Tx/Rx satellite communications at K/Ka band with a frequency ratio 1.5:1. To obtain dual band operations with a single radiating surface, a novel dual band radiator is adopted and placed in a configuration in which dual band and single band elements are interleaved. The proposed configuration reduces the number of radiating elements required by other solutions while avoiding the insurgence of grating lobes. The tightly packed arrangement of the elements poses many integration issues, which are solved with a novel integration technique. The array elements are optimized to scan the beam in excess of ° in both bands. A subarray with 49 Rx elements and 105 Tx elements was built and measured confirming the results obtained in simulations.

  7. A wave-bending structure at Ka-band using 3D-printed metamaterial

    Science.gov (United States)

    Wu, Junqiang; Liang, Min; Xin, Hao

    2018-03-01

    Three-dimensional printing technologies enable metamaterials of complex structures with arbitrary inhomogeneity. In this work, a 90° wave-bending structure at the Ka-band (26.5-40 GHz) based on 3D-printed metamaterials is designed, fabricated, and measured. The wave-bending effect is realized through a spatial distribution of varied effective dielectric constants. Based on the effective medium theory, different effective dielectric constants are accomplished by special, 3D-printable unit cells, which allow different ratios of dielectric to air at the unit cell level. In contrast to traditional, metallic-structure-included metamaterial designs, the reported wave-bending structure here is all dielectric and implemented by the polymer-jetting technique, which features rapid, low-cost, and convenient prototyping. Both simulation and experiment results demonstrate the effectiveness of the wave-bending structure.

  8. Ka-band IQ vector modulator employing GaAs HBTs

    International Nuclear Information System (INIS)

    Cao Yuxiong; Wu Danyu; Chen Gaopeng; Jin Zhi; Liu Xinyu

    2011-01-01

    The importance of high-performance, low-cost and millimeter-wave transmitters for digital communications and radar applications is increasing. The design and performance of a Ka-band balanced in-phase and quadrature-phase (I-Q) type vector modulator, using GaAs heterojunction bipolar transistors (HBTs) as switching elements, are presented. The balanced technique is used to remove the parasitics of the HBTs to result in near perfect constellations. Measurements of the monolithic microwave integrated circuit (MMIC) chip with a size of 1.89 x 2.26 mm 2 demonstrate an amplitude error below 1.5 dB and the phase error within 3 0 between 26 and 40 GHz except for a singular point at 35.6 GHz. The results show that the technique is suitable for millimeter-wave digital communications. (semiconductor integrated circuits)

  9. Radiating Elements for Shared Aperture Tx/Rx Phased Arrays at K/Ka Band

    KAUST Repository

    Sandhu, Ali Imran

    2016-04-11

    A dual band, Tx/Rx, self-diplexing phased array is presented. The antenna has been designed to cover Tx/Rx satellite communications at K/Ka band with a frequency ratio 1.5:1. To obtain dual band operations with a single radiating surface, a novel dual band radiator is adopted and placed in a configuration in which dual band and single band elements are interleaved. The proposed configuration reduces the number of radiating elements required by other solutions while avoiding the insurgence of grating lobes. The tightly packed arrangement of the elements poses many integration issues, which are solved with a novel integration technique. The array elements are optimized to scan the beam in excess of ° in both bands. A subarray with 49 Rx elements and 105 Tx elements was built and measured confirming the results obtained in simulations.

  10. Improvement of Ka-band satellite link availability for real-time IP-based video contribution

    Directory of Open Access Journals (Sweden)

    G. Berretta

    2017-09-01

    Full Text Available New High Throughput Satellite (HTS systems allow high throughput IP uplinks/contribution at Ka-band frequencies for relatively lower costs when compared to broadcasting satellite uplinks at Ku band. This technology offers an advantage for live video contribution from remote areas, where the terrestrial infrastructure may not be adequate. On the other hand, the Ka-band is more subject to impairments due to rain or bad weather. This paper addresses the target system specification and provides an optimized approach for the transmission of IP-based video flows through HTS commercial services operating at Ka-band frequencies. In particular, the focus of this study is on the service requirements and the propagation analysis that provide a reference architecture to improve the overall link availability. The approach proposed herein leads to the introduction of a new concept of live service contribution using pairs of small satellite antennas and cheap satellite terminals.

  11. Simultaneous Ka-Band Site Characterization: Goldstone, CA, White Sands, NM, and Guam, USA

    Science.gov (United States)

    Acosta, Roberto; Morse, Jacquelynne; Zemba, Michael; Nessel, James; Morabito, David; Caroglanian, Armen

    2011-01-01

    To statistically characterize atmospheric effects on Ka-band links at NASA operational sites, NASA has constructed site test interferometers (STI s) which directly measure the tropospheric phase stability and rain attenuation. These instruments observe an unmodulated beacon signal broadcast from a geostationary satellite (e.g., Anik F2) and measure the phase difference between the signals received by the two antennas and its signal attenuation. Three STI s have been deployed so far: the first one at the NASA Deep Space Network Tracking Complex in Goldstone, California (May 2007); the second at the NASA White Sands Complex, in Las Cruses, New Mexico (February 2009); and the third at the NASA Tracking and Data Relay Satellite (TDRS) Remote Ground Terminal (GRGT) complex in Guam (May 2010). Two station-years of simultaneous atmospheric phase fluctuation data have been collected at Goldstone and White Sands, while one year of data has been collected in Guam. With identical instruments operating simultaneously, we can directly compare the phase stability and rain attenuation at the three sites. Phase stability is analyzed statistically in terms of the root-mean-square (rms) of the tropospheric induced time delay fluctuations over 10 minute blocks. For two years, the time delay fluctuations at the DSN site in Goldstone, CA, have been better than 2.5 picoseconds (ps) for 90% of the time (with reference to zenith), meanwhile at the White Sands, New Mexico site, the time delay fluctuations have been better than 2.2 ps with reference to zenith) for 90% of time. For Guam, the time delay fluctuations have been better than 12 ps (reference to zenith) at 90% of the time, the higher fluctuations are as expected from a high humidity tropical rain zone. This type of data analysis, as well as many other site quality characteristics (e.g., rain attenuation, infrastructure, etc.) will be used to determine the suitability of all the sites for NASA s future communication services at Ka-band.

  12. Evolution of Monolithic Technology for Wireless Communications: GaN MMIC Power Amplifiers For Microwave Radios

    Directory of Open Access Journals (Sweden)

    Vittorio Camarchia

    2014-09-01

    Full Text Available This paper presents the progress of monolithic technology for microwaveapplication, focusing on gallium nitride technology advances in the realization of integratedpower amplifiers. Three design examples, developed for microwave backhaul radios, areshown. The first design is a 7 GHz Doherty developed with a research foundry, while thesecond and the third are a 7 GHz Doherty and a 7–15 GHz dual-band combined poweramplifiers, both based on a commercial foundry process. The employed architectures, themain design steps and the pros and cons of using gallium nitride technology are highlighted.The measured performance demonstrates the potentialities of the employed technology, andthe progress in the accuracy, reliability and performance of the process.

  13. A New Blind Pointing Model Improves Large Reflector Antennas Precision Pointing at Ka-Band (32 GHz)

    Science.gov (United States)

    Rochblatt, David J.

    2009-01-01

    The National Aeronautics and Space Administration (NASA), Jet Propulsion Laboratory (JPL)-Deep Space Network (DSN) subnet of 34-m Beam Waveguide (BWG) Antennas was recently upgraded with Ka-Band (32-GHz) frequency feeds for space research and communication. For normal telemetry tracking a Ka-Band monopulse system is used, which typically yields 1.6-mdeg mean radial error (MRE) pointing accuracy on the 34-m diameter antennas. However, for the monopulse to be able to acquire and lock, for special radio science applications where monopulse cannot be used, or as a back-up for the monopulse, high-precision open-loop blind pointing is required. This paper describes a new 4th order pointing model and calibration technique, which was developed and applied to the DSN 34-m BWG antennas yielding 1.8 to 3.0-mdeg MRE pointing accuracy and amplitude stability of 0.2 dB, at Ka-Band, and successfully used for the CASSINI spacecraft occultation experiment at Saturn and Titan. In addition, the new 4th order pointing model was used during a telemetry experiment at Ka-Band (32 GHz) utilizing the Mars Reconnaissance Orbiter (MRO) spacecraft while at a distance of 0.225 astronomical units (AU) from Earth and communicating with a DSN 34-m BWG antenna at a record high rate of 6-megabits per second (Mb/s).

  14. Ka-Band, MEMS Switched Line Phase Shifters Implemented in Finite Ground Coplanar Waveguide

    Science.gov (United States)

    Scardelletti, Maximilian C.; Ponchak, George E.; Varaljay, Nicholas C.

    2005-01-01

    Ka-band MEMS switched line phase shifters implemented in finite ground coplanar waveguide are described in this paper. The phase shifters are constructed of single-pole double-throw (SPDT) switches with additional reference and phase offset transmission line lengths. The one- and two-bit phase shifters are fabricated on high resistivity (HR) silicon with a dielectric constant, Epsilon(sub T) = 11.7 and a substrate thickness, t = 500microns. The switching architectures integrated within the phase shifters consist of MEMS switches that are doubly anchored cantilever beam capacitive switches with additional high inductive sections (MEMS LC device). The SPDT switch is composed of a T-junction with a MEMS LC device at each output port. The one-bit phase shifter described in this paper has an insertion loss (IL) and return loss (RL) of 0.9 dB and 30 dB while the two-bit described has an IL and RL of 1.8 dB and 30 dB respectively. The one-bit phase shifter's designed offset phase is 22.5deg and actual measured phase shift is 21.8deg. The two-bit phase shifter's designed offset phase is 22.5deg, 45deg, and 67.5deg and the actual measured phase shifts are 21.4deg, 44.2deg, and 65.8deg, respectively.

  15. Ka-Band Slot-Microstrip-Covered and Waveguide-Cavity-Backed Monopulse Antenna Array

    Directory of Open Access Journals (Sweden)

    Li-Ming Si

    2014-01-01

    Full Text Available A slot-microstrip-covered and waveguide-cavity-backed monopulse antenna array is proposed for high-resolution tracking applications at Ka-band. The monopulse antenna array is designed with a microstrip with 2×32 slots, a waveguide cavity, and a waveguide monopulse comparator, to make the structure simple, reduce the feeding network loss, and increase the frequency bandwidth. The 2×32 slot-microstrip elements are formed by a metal clad dielectric substrate and slots etched in the metal using the standard printed circuit board (PCB process with dimensions of 230 mm  ×  10 mm. The proposed monopulse antenna array not only maintains the advantages of the traditional waveguide slot antenna array, but also has the characteristics of wide bandwidth, high consistence, easy of fabrication, and low cost. From the measured results, it exhibits good monopulse characteristics, including the following: the maximum gains of sum pattern are greater than 24 dB, the 3 dB beamwidth of sum pattern is about 2.2 degrees, the sidelobe levels of the sum pattern are less than −18 dB, and the null depths of the difference pattern are less than −25 dB within the operating bandwidth between 33.65 GHz and 34.35 GHz for VSWR ≤ 2.

  16. Attenuation Effects of Plasma on Ka-Band Wave Propagation in Various Gas and Pressure Environments

    Directory of Open Access Journals (Sweden)

    Joo Hwan Lee

    2018-01-01

    Full Text Available This work demonstrates attenuation effects of plasma on waves propagating in the 26.5–40 GHz range. The effect is investigated via experiments measuring the transmission between two Ka-band horn antennas set 30 cm apart. A dielectric-barrier-discharge (DBD plasma generator with a size of 200 mm × 100 mm × 70 mm and consisting of 20 layers of electrodes is placed between the two antennas. The DBD generator is placed in a 400 mm × 300 mm × 400 mm acrylic chamber so that the experiments can be performed for plasma generated under various conditions of gas and pressure, for instance, in air, Ar, and He environments at 0.001, 0.05, and 1 atm of pressure. Attenuation is calculated by the difference in the transmission level, with and without plasma, which is generated with a bias voltage of 20 kV in the 0.1–1.4 kHz range. Results show that the attenuation varies from 0.05 dB/m to 9.0 dB/m depending on the environment. Noble gas environments show higher levels of attenuation than air, and He is lossier than Ar. In all gas environments, attenuation increases as pressure increases. Finally, electromagnetic models of plasmas generated in various conditions are provided.

  17. Integrated Production of Ultra-Low Defect GaN Films and Devices for High-Power Amplifiers, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — High quality GaN epitaxial films are key to current efforts for development of both high-power/high-speed electronic devices and optoelectronic devices. In fact,...

  18. Integrated Production of Ultra-Low Defect GaN Films and Devices for High-Power Amplifiers, Phase II

    Data.gov (United States)

    National Aeronautics and Space Administration — High quality GaN epitaxial films are one of the keys to current efforts for development of both high-power/high-speed electronic devices and optoelectronic devices....

  19. Bandwidth-Efficient Communication through 225 MHz Ka-band Relay Satellite Channel

    Science.gov (United States)

    Downey, Joseph; Downey, James; Reinhart, Richard C.; Evans, Michael Alan; Mortensen, Dale John

    2016-01-01

    The communications and navigation space infrastructure of the National Aeronautics and Space Administration (NASA) consists of a constellation of relay satellites (called Tracking and Data Relay Satellites (TDRS)) and a global set of ground stations to receive and deliver data to researchers around the world from mission spacecraft throughout the solar system. Planning is underway to enhance and transform the infrastructure over the coming decade. Key to the upgrade will be the simultaneous and efficient use of relay transponders to minimize cost and operations while supporting science and exploration spacecraft. Efficient use of transponders necessitates bandwidth efficient communications to best use and maximize data throughput within the allocated spectrum. Experiments conducted with NASA's Space Communication and Navigation (SCaN) Testbed on the International Space Station provides a unique opportunity to evaluate advanced communication techniques, such as bandwidth-efficient modulations, in an operational flight system. Demonstrations of these new techniques in realistic flight conditions provides critical experience and reduces the risk of using these techniques in future missions. Efficient use of spectrum is enabled by using high-order modulations coupled with efficient forward error correction codes. This paper presents a high-rate, bandwidth-efficient waveform operating over the 225 MHz Ka-band service of the TDRS System (TDRSS). The testing explores the application of Gaussian Minimum Shift Keying (GMSK), 248-phase shift keying (PSK) and 1632- amplitude PSK (APSK) providing over three bits-per-second-per-Hertz (3 bsHz) modulation combined with various LDPC encoding rates to maximize throughput. With a symbol rate of 200 Mbaud, coded data rates of 1000 Mbps were tested in the laboratory and up to 800 Mbps over the TDRS 225 MHz channel. This paper will present on the high-rate waveform design, channel characteristics, performance results, compensation

  20. Bandwidth-Efficient Communication through 225 MHz Ka-band Relay Satellite Channel

    Science.gov (United States)

    Downey, Joseph A.; Downey, James M.; Reinhart, Richard C.; Evans, Michael A.; Mortensen, Dale J.

    2016-01-01

    The communications and navigation space infrastructure of the National Aeronautics and Space Administration (NASA) consists of a constellation of relay satellites (called Tracking and Data Relay Satellites (TDRS)) and a global set of ground stations to receive and deliver data to researchers around the world from mission spacecraft throughout the solar system. Planning is underway to enhance and transform the infrastructure over the coming decade. Key to the upgrade will be the simultaneous and efficient use of relay transponders to minimize cost and operations while supporting science and exploration spacecraft. Efficient use of transponders necessitates bandwidth efficient communications to best use and maximize data throughput within the allocated spectrum. Experiments conducted with NASA's Space Communication and Navigation (SCaN) Testbed on the International Space Station provides a unique opportunity to evaluate advanced communication techniques, such as bandwidth-efficient modulations, in an operational flight system. Demonstrations of these new techniques in realistic flight conditions provides critical experience and reduces the risk of using these techniques in future missions. Efficient use of spectrum is enabled by using high-order modulations coupled with efficient forward error correction codes. This paper presents a high-rate, bandwidth-efficient waveform operating over the 225 MHz Ka-band service of the TDRS System (TDRSS). The testing explores the application of Gaussian Minimum Shift Keying (GMSK), 2/4/8-phase shift keying (PSK) and 16/32- amplitude PSK (APSK) providing over three bits-per-second-per-Hertz (3 b/s/Hz) modulation combined with various LDPC encoding rates to maximize through- put. With a symbol rate of 200 M-band, coded data rates of 1000 Mbps were tested in the laboratory and up to 800 Mbps over the TDRS 225 MHz channel. This paper will present on the high-rate waveform design, channel characteristics, performance results

  1. Partially Observable Markov Decision Process-Based Transmission Policy over Ka-Band Channels for Space Information Networks

    Directory of Open Access Journals (Sweden)

    Jian Jiao

    2017-09-01

    Full Text Available The Ka-band and higher Q/V band channels can provide an appealing capacity for the future deep-space communications and Space Information Networks (SIN, which are viewed as a primary solution to satisfy the increasing demands for high data rate services. However, Ka-band channel is much more sensitive to the weather conditions than the conventional communication channels. Moreover, due to the huge distance and long propagation delay in SINs, the transmitter can only obtain delayed Channel State Information (CSI from feedback. In this paper, the noise temperature of time-varying rain attenuation at Ka-band channels is modeled to a two-state Gilbert–Elliot channel, to capture the channel capacity that randomly ranging from good to bad state. An optimal transmission scheme based on Partially Observable Markov Decision Processes (POMDP is proposed, and the key thresholds for selecting the optimal transmission method in the SIN communications are derived. Simulation results show that our proposed scheme can effectively improve the throughput.

  2. Calibration of the KA Band Tracking of the Bepi-Colombo Spacecraft (more Experiment)

    Science.gov (United States)

    Barriot, J.; Serafini, J.; Sichoix, L.

    2013-12-01

    The radiosciences Bepi-Colombo MORE experiment will use X/X, X/Ka and Ka/Ka band radio links to make accurate measurements of the spacecraft range and range rate. Tropospheric zenith wet delays range from 1.5 cm to 10 cm, with high variability (less than 1000 s) and will impair these accurate measurements. Conditions vary from summer (worse) to winter (better), from day (worse) to night (better). These wet delays cannot be estimated from ground weather measurements and alternative calibration methods should be used in order to cope with the MORE requirements (no more than 3 mm at 1000 s). Due to the Mercury orbit, MORE measurements will be performed by daylight and more frequently in summer than in winter (from Northern hemisphere). Two systems have been considered to calibrate this wet delay: Water Vapor Radiometers (WVRs) and GPS receivers. The Jet Propulsion Laboratory has developed a new class of WVRs reaching a 5 percent accuracy for the wet delay calibration (0.75 mm to 5 mm), but these WVRs are expensive to build and operate. GPS receivers are also routinely used for the calibration of data from NASA Deep Space probes, but several studies have shown that GPS receivers can give good calibration (through wet delay mapping functions) for long time variations, but are not accurate enough for short time variations (100 to 1000 s), and that WVRs must be used to efficiently calibrate the wet troposphere delays over such time spans. We think that such a calibration could be done by assimilating data from all the GNSS constellations (GPS, GLONASS, Galileo, Beidou and IRNSS) that will be available at the time of the Bepi-Colombo arrival at Mercury (2021), provided that the underlying physics of the turbulent atmosphere and evapotranspiration processes are properly taken into account at such time scales. This implies to do a tomographic image of the troposphere overlying each Deep Space tracking station at time scales of less than 1000 s. For this purpose, we have

  3. A New Ka-Band Scanning Radar Facility: Polarimetric and Doppler Spectra Measurements of Snow Events

    Science.gov (United States)

    Oue, M.; Kollias, P.; Luke, E. P.; Mead, J.

    2017-12-01

    Polarimetric radar analyses offer the capability of identification of ice hydrometeor species as well as their spatial distributions. In addition to polarimetric parameter observations, Doppler spectra measurements offer unique insights into ice particle properties according to particle fall velocities. In particular, millimeter-wavelength radar Doppler spectra can reveal supercooled liquid cloud droplets embedded in ice precipitation clouds. A Ka-band scanning polarimetric radar, named KASPR, was installed in an observation facility at Stony Brook University, located 22 km west of the KOKX NEXRAD radar at Upton, NY. The KASPR can measure Doppler spectra and full polarimetric variables, including radar reflectivity, differential reflectivity (ZDR), differential phase (φDP), specific differential phase (KDP), correlation coefficient (ρhv), and linear depolarization ratio (LDR). The facility also includes a micro-rain radar and a microwave radiometer capable of measuring reflectivity profiles and integrated liquid water path, respectively. The instruments collected initial datasets during two snowstorm events and two snow shower events in March 2017. The radar scan strategy was a combination of PPI scans at 4 elevation angles (10, 20, 45, and 60°) and RHI scans in polarimetry mode, and zenith pointing with Doppler spectra collection. During the snowstorm events the radar observed relatively larger ZDR (1-1.5 dB) and enhanced KDP (1-2 ° km-1) at heights corresponding to a plate/dendrite crystal growth regime. The Doppler spectra showed that slower-falling particles ( 1 m s-1). The weakly increased ZDR could be produced by large, faster falling particles such as quasi-spherical aggregates, while the enhanced KDP could be produced by highly-oriented oblate, slowly-falling particles. Below 2 km altitude, measurements of dual wavelength ratio (DWR) based on Ka and S-band reflectivities from the KASPR and NEXRAD radars were available. Larger DWR (>10 dB) suggested

  4. A Novel Low-cost, Ka-band, High Altitude, Multi-Baseline Unmanned Aerial Vehicle Sensor for Surface Water Ocean Topography, Phase II

    Data.gov (United States)

    National Aeronautics and Space Administration — This proposal presents the Ka-band SWOT Phenomenology Airborne Radar (KaSPAR) to support the surface water ocean topography (SWOT) mission for science and algorithm...

  5. Impact of Surface Soil Moisture Variations on Radar Altimetry Echoes at Ku and Ka Bands in Semi-Arid Areas

    Directory of Open Access Journals (Sweden)

    Christophe Fatras

    2018-04-01

    Full Text Available Radar altimetry provides information on the topography of the Earth surface. It is commonly used for the monitoring not only sea surface height but also ice sheets topography and inland water levels. The radar altimetry backscattering coefficient, which depends on surface roughness and water content, can be related to surface properties such as surface soil moisture content. In this study, the influence of surface soil moisture on the radar altimetry echo and backscattering coefficient is analyzed over semi-arid areas. A semi-empirical model of the soil’s complex dielectric permittivity that takes into account that small-scale roughness and large-scale topography was developed to simulate the radar echoes. It was validated using waveforms acquired at Ku and Ka-bands by ENVISAT RA-2 and SARAL AltiKa respectively over several sites in Mali. Correlation coefficients ranging from 0.66 to 0.94 at Ku-band and from 0.27 to 0.96 at Ka-band were found. The increase in surface soil moisture from 0.02 to 0.4 (i.e., the typical range of variations in semi-arid areas increase the backscattering from 10 to 15 dB between the core of the dry and the maximum of the rainy seasons.

  6. Installing the earth station of Ka-band satellite frequency in Malaysia: conceptual framework for site decision

    Science.gov (United States)

    Mahmud, M. R.; Reba, M. N. M.; Jaw, S. W.; Arsyad, A.; Ibrahim, M. A. M.

    2017-05-01

    This paper developed a conceptual framework in determining the suitable location in installing the earth station for Ka-band satellite communication in Malaysia. This current evolution of high throughput satellites experienced major challenge due to Malaysian climate. Because Ka-band frequency is highly attenuated by the rainfall; it is an enormous challenge to define the most appropriate site for the static communication. Site diversity, a measure to anticipate this conflict by choosing less attenuated region and geographically change the transmission strategy on season basis require accurate spatio-temporal information on the geographical, environmental and hydro-climatology at local scale. Prior to that request, this study developed a conceptual framework to cater the needs. By using the digital spatial data, acquired from site measurement and remote sensing, the proposed framework applied a multiple criteria analysis to perform the tasks of site selection. With the advancement of high resolution remotely sensed data, site determination can be conducted as in Malaysia; accommodating a new, fast, and effective satellite communication. The output of this study is one of the pioneer contributions to create a high tech-society.

  7. Solid state Ka-band pulse oscillator with frequency electronic switching

    Directory of Open Access Journals (Sweden)

    Dvornichenko V. P.

    2015-08-01

    Full Text Available Transmitting devices for small radars in the millimeter wavelength range with high resolution on range and noise immunity. The work presents the results of research and development of compact pulse oscillators with digital frequency switching from pulse to pulse. The oscillator consists of a frequency synthesizer and a synchronized amplifier on the IMPATT diode. Reference oscillator of synthesizer is synchronized by crystal oscillator with digital PLL system and contains a frequency multiplier and an amplifier operating in pulse mode. Small-sized frequency synthesizer of 8 mm wave lengths provides an output power of ~1.2 W per pulse with a frequency stability of no worse than 2•10–6. Radiation frequency is controlled by three-digit binary code in OOL levels. Synchronized amplifier made on IMPATT diodes provides microwave power up to 20 W in oscillator output with microwave pulse duration of 100—300 ns in an operating band. The oscillator can be used as a driving source for the synchronization of semiconductor and electro-vacuum devices of pulsed mode, and also as a transmitting device for small-sized radar of millimeter wave range.

  8. AltiKa: a Ka-band Altimetry Payload and System for Operational Altimetry during the GMES Period

    Directory of Open Access Journals (Sweden)

    Jacques Verron

    2006-03-01

    Full Text Available This paper describes the Ka-band altimetry payload and system that has beenstudied for several years by CNES, ALCATEL SPACE and some science laboratories.Altimetry is one of the major elements of the ocean observing system to be madesustainable through the GEOSS (Global Earth Observation System of Systems and GMES(Global Monitoring of the Environment and Security programs. A short review of somemission objectives to be fulfilled in terms of mesoscale oceanography in the frame of theGEOSS and GMES programs is performed. To answer the corresponding requirements, theapproach consisting in a constellation of nadir altimeter is discussed. A coupled Ka-bandaltimeter-radiometer payload is then described; technical items are detailed to explain howthis payload shall meet the science and operational requirements, and expectedperformances are displayed. The current status of the payload development and flightperspectives are given.

  9. Performance Analysis of Ultra-Wideband Channel for Short-Range Monopulse Radar at Ka-Band

    Directory of Open Access Journals (Sweden)

    Naohiko Iwakiri

    2012-01-01

    Full Text Available High-range resolution is inherently provided with Ka-band ultra-wideband (UWB vehicular radars. The authors have developed a prototype UWB monopulse radar equipped with a two-element receiving antenna array and reported its measurement results. In this paper, a more detailed verification using these measurements is presented. The measurements were analyzed employing matched filtering and eigendecomposition, and then multipath components were extracted to examine the behavior of received UWB monopulse signals. Next, conventional direction finding algorithms based on narrowband assumption were evaluated using the extracted multipath components, resulting in acceptable angle-of-arrival (AOA from the UWB monopulse signal regardless of wideband signals. Performance degradation due to a number of averaging the received monopulses was also examined to design suitable radar's waveforms.

  10. A Decade-Bandwidth Distributed Power Amplifier MMIC Using 0.25 μm GaN HEMT Technology

    Directory of Open Access Journals (Sweden)

    Dong-Hwan Shin

    2017-10-01

    Full Text Available This study presents a 2–20 GHz monolithic distributed power amplifier (DPA using a 0.25 μm AlGaN/GaN on SiC high electron mobility transistor (HEMT technology. The gate width of the HEMT was selected after considering the input capacitance of the unit cell that guarantees decade bandwidth. To achieve high output power using small transistors, a 12-stage DPA was designed with a nonuniform drain line impedance to provide optimal output power matching. The maximum operating frequency of the proposed DPA is above 20 GHz, which is higher than those of other DPAs manufactured with the same gate-length process. The measured output power and power-added efficiency of the DPA monolithic microwave integrated circuit (MMIC are 35.3–38.6 dBm and 11.4%–31%, respectively, for 2–20 GHz.

  11. Multiple scattering effects on the Linear Depolarization Ratio (LDR) measured during CaPE by a Ka-band air-borne radar

    Science.gov (United States)

    Iguchi, Toshio; Meneghini, Robert

    1993-01-01

    Air-borne radar measurements of thunderstorms were made as part of the CaPE (Convection and Precipitation/Electrification) experiment in Florida in July 1991. The radar has two channels, X-band (10 GHz) and Ka-band (34.5 GHz), and is capable of measuring cross-polarized returns as well as co-polarized returns. In stratiform rain, the cross-polarized components can be observed only at the bright band region and from the surface reflection. The linear depolarization ratios (LDR's) measured at X-band and Ka-band at the bright band are nearly equal. In convective rain, however, the LDR in Ka-band often exceeds the X-band LDR by several dB, and sometimes by more than 10 dB, reaching LDR values of up to -5 dB over heavy convective rain. For randomly oriented hydrometeors, such high LDR values cannot be explained by single scattering from non-spherical scattering particles alone. Because the LDR by single backscatter depends weakly on the wavelength, the difference between the Ka-band and X-band LDR's suggests that multiple scattering effects prevail in the Ka-band LDR. In order to test this inference, the magnitude of the cross-polarized component created by double scattering was calculated using the parameters of the airborne radar, which for both frequencies has beamwidths of 5.1 degrees and pulse widths of 0.5 microsecond. Uniform rain beyond the range of 3 km is assumed.

  12. Preliminary Analysis of X-Band and Ka-Band Radar for Use in the Detection of Icing Conditions Aloft

    Science.gov (United States)

    Reehorst, Andrew L.; Koenig, George G.

    2004-01-01

    NASA and the U.S. Army Cold Regions Research and Engineering Laboratory (CRREL) have an on-going activity to develop remote sensing technologies for the detection and measurement of icing conditions aloft. Radar has been identified as a strong tool for this work. However, since the remote detection of icing conditions with the intent to identify areas of icing hazard is a new and evolving capability, there are no set requirements for radar sensitivity. This work is an initial attempt to quantify, through analysis, the sensitivity requirements for an icing remote sensing radar. The primary radar of interest for cloud measurements is Ka-band, however, since NASA is currently using an X-band unit, this frequency is also examined. Several aspects of radar signal analysis were examined. Cloud reflectivity was calculated for several forms of cloud using two different techniques. The Air Force Geophysical Laboratory (AFGL) cloud models, with different drop spectra represented by a modified gamma distribution, were utilized to examine several categories of cloud formation. Also a fundamental methods approach was used to allow manipulation of the cloud droplet size spectra. And an analytical icing radar simulator was developed to examine the complete radar system response to a configurable multi-layer cloud environment. Also discussed is the NASA vertical pointing X-band radar. The radar and its data system are described, and several summer weather events are reviewed.

  13. Lock threshold deterioration induced by antenna vibration and signal coupling effects in hypersonic vehicle carrier tracking system of Ka band

    Directory of Open Access Journals (Sweden)

    Congying ZHU

    2018-04-01

    Full Text Available The envelope of a hypersonic vehicle is affected by severe fluctuating pressure, which causes the airborne antenna to vibrate slightly. This vibration mixes with the transmitted signals and thus introduces additional multiplicative phase noise. Antenna vibration and signal coupling effects as well as their influence on the lock threshold of the hypersonic vehicle carrier tracking system of the Ka band are investigated in this study. A vibration model is initially established to obtain phase noise in consideration of the inherent relationship between vibration displacement and electromagnetic wavelength. An analytical model of the Phase-Locked Loop (PLL, which is widely used in carrier tracking systems, is established. The coupling effects on carrier tracking performance are investigated and quantitatively analyzed by imposing the multiplicative phase noise on the PLL model. Simulation results show that the phase noise presents a Gaussian distribution and is similar to vibration displacement variation. A large standard deviation in vibration displacement exerts a significant effect on the lock threshold. A critical standard deviation is observed in the PLL of Binary Phase Shift Keying (BPSK and Quadrature Phase Shift Keying (QPSK signals. The effect on QPSK signals is more severe than that on BPSK signals. The maximum tolerable standard deviations normalized by the wavelength of the carrier are 0.04 and 0.02 for BPSK and QPSK signals, respectively. With these critical standard deviations, lock thresholds are increased from −12 and −4 dB to 3 and −2 dB, respectively. Keywords: Antenna vibration, Carrier tracking performance, Lock threshold, Phase locked loop, Tracking Telemetry and Command (TT&C signals

  14. Factors influencing the temporal growth rate of the high order TM{sub 0n} modes in the Ka-band overmoded Cherenkov oscillator

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Dapeng, E-mail: vipbenjamin@163.com; Shu, Ting; Ju, Jinchuan [College of Photoelectric Science and Engineering, National University of Defense Technology, Changsha 410073 (China)

    2015-06-15

    When the wavelength of overmoded Cherenkov oscillator goes into Ka-band, power handling capacity becomes an essential issue. Using the TM{sub 02} mode or higher order TM{sub 0n} modes as the operating mode is a potential solution. This paper is aimed to find some proper parameters to make the temporal growth rate of the TM{sub 02} mode higher in our previously studied Gigawatt (GW)-class Ka band oscillator. An accurate and fast calculation method of the “hot” dispersion equation is derived for rectangular corrugated SWSs, which are widely used in the high frequency Cherenkov devices. Then, factors that affect the temporal growth rate of the high order TM{sub 0n} modes are analyzed, including the depth of corrugation, the radius of drift tube, and the diode voltage. Results show that, when parameters are chosen properly, the temporal growth rate of the TM{sub 02} mode can be as high as 0.3 ns{sup −1}.

  15. F-band, High-Efficiency GaN Power Amplifier for the Scanning Microwave Limb Sounder and SOFIA, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — QuinStar Technology proposes to develop a 4-watt Solid-State Power Amplifier (SSPA) operating at F-band (106-114 GHz) with a power-added efficiency (PAE) of greater...

  16. Ka-band to L-band frequency down-conversion based on III-V-on-silicon photonic integrated circuits

    Science.gov (United States)

    Van Gasse, K.; Wang, Z.; Uvin, S.; De Deckere, B.; Mariën, J.; Thomassen, L.; Roelkens, G.

    2017-12-01

    In this work, we present the design, simulation and characterization of a frequency down-converter based on III-V-on-silicon photonic integrated circuit technology. We first demonstrate the concept using commercial discrete components, after which we demonstrate frequency conversion using an integrated mode-locked laser and integrated modulator. In our experiments, five channels in the Ka-band (27.5-30 GHz) with 500 MHz bandwidth are down-converted to the L-band (1.5 GHz). The breadboard demonstration shows a conversion efficiency of - 20 dB and a flat response over the 500 MHz bandwidth. The simulation of a fully integrated circuit indicates that a positive conversion gain can be obtained on a millimeter-sized photonic integrated circuit.

  17. NASA developments in solid state power amplifiers

    Science.gov (United States)

    Leonard, Regis F.

    1990-01-01

    Over the last ten years, NASA has undertaken an extensive program aimed at development of solid state power amplifiers for space applications. Historically, the program may be divided into three phases. The first efforts were carried out in support of the advanced communications technology satellite (ACTS) program, which is developing an experimental version of a Ka-band commercial communications system. These first amplifiers attempted to use hybrid technology. The second phase was still targeted at ACTS frequencies, but concentrated on monolithic implementations, while the current, third phase, is a monolithic effort that focusses on frequencies appropriate for other NASA programs and stresses amplifier efficiency. The topics covered include: (1) 20 GHz hybrid amplifiers; (2) 20 GHz monolithic MESFET power amplifiers; (3) Texas Instruments' (TI) 20 GHz variable power amplifier; (4) TI 20 GHz high power amplifier; (5) high efficiency monolithic power amplifiers; (6) GHz high efficiency variable power amplifier; (7) TI 32 GHz monolithic power amplifier performance; (8) design goals for Hughes' 32 GHz variable power amplifier; and (9) performance goals for Hughes' pseudomorphic 60 GHz power amplifier.

  18. Application of Synthetic Storm Technique for Diurnal and Seasonal Variation of Slant Path Ka-Band Rain Attenuation Time Series over a Subtropical Location in South Africa

    Directory of Open Access Journals (Sweden)

    J. S. Ojo

    2015-01-01

    Full Text Available As technology advances and more demands are on satellite services, rain-induced attenuation still creates one of the most damaging effects of the atmosphere on the quality of radio communication signals, especially those operating above 10 GHz. System designers therefore require statistical information on rain-induced attenuation over the coverage area in order to determine the appropriate transmitter and receiver characteristics to be adopted. This paper presents results on the time-varying rain characterization and diurnal variation of slant path rain attenuation in the Ka-band frequency simulated with synthetic storm techniques over a subtropical location in South Africa using 10-year rain rate time-series data. The analysis is based on the CDF of one-minute rain rate; time-series seasonal variation of rain rate observed over four time intervals: 00:00–06:00, 06:00–12:00, 12:00–18:00, and 18:00–24:00; diurnal fades margin; and diurnal variation of rain attenuation. Comparison was also made between the synthesized values and measured attenuation data. The predicted statistics are in good agreement with those obtained from the propagation beacon measurement in the area. The overall results will be needed for an acceptable planning that can effectively reduce the fade margin to a very low value for an optimum data communication over this area.

  19. Lunar Noise-Temperature Increase Measurements at S-Band, X-Band, and Ka-Band Using a 34-Meter-Diameter Beam-Waveguide Antenna

    Science.gov (United States)

    Morabito, D. D.

    2006-08-01

    The Moon radiates energy at infrared and microwave wavelengths, in addition to reflecting sunlight at optical wavelengths. As a result, an antenna pointed at or near the Moon will cause an increase in receiver noise temperature that needs to be accounted for in telemetry, radio science, or ranging link budgets. The Deep Space Network may be required to use its antennas in future lunar robotic or human missions, and thus it is important to understand the nature of this temperature increase as a function of observing frequency, lunar phase, and angular offset of the antenna beam from the center of the lunar disk. This article quantifies such a set of measurements acquired at DSS 13, a 34-m-diameter research and development beam-waveguide antenna located at Goldstone, California, at three different telecommunication frequencies, S-band (2.3 GHz), X-band (8.4 GHz), and Ka-band (32 GHz), over a wide range of lunar phase, for both disk-centered and limb-centered positions of the antenna beam.

  20. 25–34 GHz Single-Pole, Double-Throw CMOS Switches for a Ka-Band Phased-Array Transceiver

    Directory of Open Access Journals (Sweden)

    Sangyong Park

    2018-01-01

    Full Text Available This paper presents two single-pole, double-throw (SPDT mm-wave switches for Ka-band phased-array transceivers, fabricated with a 65-nm complementary metal oxide semiconductor (CMOS process. One switch employs cross-biasing (CB control with a single supply, while the other uses dual-supply biasing (DSB control with positive and negative voltages. Negative voltages were generated internally, using a ring oscillator and a charge pump. Identical gate and body floated N-type metal oxide semiconductor field effect transistors (N-MOSFETs in a triple well were used as the switch core transistors. Inductors were used to improve the isolation between the transmitter (TX and receiver (RX, as well as insertion loss, by canceling the parasitic capacitance of the switch core transistors at resonance. The size of the proposed radio frequency (RF switch is 260 μm × 230 μm, excluding all pads. The minimum insertion losses of the CB and DSB switches were 2.1 dB at 28 GHz and 1.93 dB at 24 GHz, respectively. Between 25 GHz and 34 GHz, the insertion losses were less than 2.3 dB and 2.5 dB, the return losses were less than 16.7 dB and 17.3 dB, and the isolation was over 18.4 dB and 15.3 dB, respectively. The third order input intercept points (IIP3 of the CB and DSB switches were 38.4 dBm and 39 dBm at 28 GHz, respectively.

  1. Comparing and Merging Observation Data from Ka-Band Cloud Radar, C-Band Frequency-Modulated Continuous Wave Radar and Ceilometer Systems

    Directory of Open Access Journals (Sweden)

    Liping Liu

    2017-12-01

    Full Text Available Field experiment in South China was undertaken to improve understanding of cloud and precipitation properties. Measurements of the vertical structures of non-precipitating and precipitating clouds were obtained using passive and active remote sensing equipment: a Ka-band cloud radar (CR system, a C-band frequency modulated continuous wave vertical pointing radar (CVPR, a microwave radiometer and a laser ceilometer (CEIL. CR plays a key role in high-level cloud observation, whereas CVPR is important for observing low- and mid-level clouds and heavy precipitation. CEIL helps us diminish the effects of “clear-sky” in the planetary boundary layer. The experiment took place in Longmen, Guangdong Province, China from May to September of 2016. This study focuses on evaluating the ability of the two radars to deliver consistent observation data and develops an algorithm to merge the CR, CVPR and CEIL data. Cloud echo base, thickness, frequency of observed cloud types and reflectivity vertical distributions are analyzed in the radar data. Comparisons between the collocated data sets show that reflectivity biases between the CR three operating modes are less than 2 dB. The averaged difference between CR and CVPR reflectivity can be reduced with attenuation correction to 3.57 dB from the original 4.82 dB. No systemic biases were observed between velocity data collected in the three CR modes and CVPR. The corrected CR reflectivity and velocity data were then merged with the CVPR data and CEIL data to fill in the gaps during the heavy precipitation periods and reduce the effects of Bragg scattering and fog on cloud observations in the boundary layer. Meanwhile, the merging of velocity data with different Nyquist velocities and resolutions diminishes velocity folding to provide fine-grain information about cloud and precipitation dynamics. The three daily periods in which low-level clouds tended to occur were at sunrise, noon and sunset and large

  2. Fan tomography of the tropospheric water vapor for the calibration of the Ka band tracking of the Bepi-Colombo spacecraft (MORE experiment).

    Science.gov (United States)

    Barriot, Jean-Pierre; Serafini, Jonathan; Sichoix, Lydie

    2012-07-01

    The radiosciences Bepi-Colombo MORE experiment will use X/X, X/Ka and Ka/Ka band radio links to make accurate measurements of the spacecraft range and range rate. Tropospheric zenith wet delays range from 1.5 cm to 10 cm, with high variability (less than 1000 s) and will impair these accurate measurements. Conditions vary from summer (worse) to winter (better), from day (worse) to night (better). These wet delays cannot be estimated from ground weather measurements and alternative calibration methods should be used in order to cope with the MORE requirements (no more than 3 mm at 1000 s). Due to the Mercury orbit, MORE measurements will be performed by daylight and more frequently in summer than in winter (from Northern hemisphere). Two systems have been considered to calibrate this wet delay: Water Vapour Radiometers (WVRs) and GPS receivers. The Jet Propulsion Laboratory has developed a new class of WVRs reaching a 5 percent accuracy for the wet delay calibration (0.75 mm to 5 mm), but these WVRs are expensive to build and operate. GPS receivers are also routinely used for the calibration of data from NASA Deep Space probes, but several studies have shown that GPS receivers can give good calibration (through wet delay mapping functions) for long time variations, but are not accurate enough for short time variations (100 to 1000 s), and that WVRs must be used to efficiently calibrate the wet troposphere delays over such time spans. We think that such a calibration could be done by assimilating data from all the GNSS constellations (GPS, GLONASS, Galileo, Beidou and IRNSS) that will be available at the time of the Bepi-Colombo arrival at Mercury (2021), provided that the underlying physics of the turbulent atmosphere and evapotranspiration processes are properly taken into account at such time scales. This implies to do a tomographic image of the troposphere overlying each Deep Space tracking station at time scales of less than 1000 s. For this purpose, we have

  3. A Novel Application of Fourier Transform Spectroscopy with HEMT Amplifiers at Microwave Frequencies

    Science.gov (United States)

    Wilkinson, David T.; Page, Lyman

    1995-01-01

    The goal was to develop cryogenic high-electron-mobility transistor (HEMT) based radiometers and use them to measure the anisotropy in the cosmic microwave background (CMB). In particular, a novel Fourier transform spectrometer (FTS) built entirely of waveguide components would be developed. A dual-polarization Ka-band HEMT radiometer and a similar Q-band radiometer were built. In a series of measurements spanning three years made from a ground-based site in Saskatoon, SK, the amplitude, frequency spectrum, and spatial frequency spectrum of the anisotropy were measured. A prototype Ka-band FTS was built and tested, and a simplified version is proposed for the MAP satellite mission. The 1/f characteristics of HEMT amplifiers were quantified using correlation techniques.

  4. Fiber Amplifiers

    DEFF Research Database (Denmark)

    Rottwitt, Karsten

    2017-01-01

    The chapter provides a discussion of optical fiber amplifiers and through three sections provides a detailed treatment of three types of optical fiber amplifiers, erbium doped fiber amplifiers (EDFA), Raman amplifiers, and parametric amplifiers. Each section comprises the fundamentals including...... the basic physics and relevant in-depth theoretical modeling, amplifiers characteristics and performance data as a function of specific operation parameters. Typical applications in fiber optic communication systems and the improvement achievable through the use of fiber amplifiers are illustrated....

  5. Microwave Integrated Circuit Amplifier Designs Submitted to Qorvo for Fabrication with 0.09-micron High Electron Mobility Transistors (HEMTs) using 2-mil Gallium Nitride (GaN) on Silicon Carbide (SiC)

    Science.gov (United States)

    2016-03-01

    ARL-TN-0743 ● MAR 2016 US Army Research Laboratory Microwave Integrated Circuit Amplifier Designs Submitted to Qorvo for...originator. ARL-TN-0743 ● MAR 2016 US Army Research Laboratory Microwave Integrated Circuit Amplifier Designs Submitted to Qorvo...To) October 2015–January 2016 4. TITLE AND SUBTITLE Microwave Integrated Circuit Amplifier Designs Submitted to Qorvo for Fabrication with 0.09

  6. Thermal Modeling of GaN HEMTs on Sapphire and Diamond

    National Research Council Canada - National Science Library

    Salm, III, Roman P

    2005-01-01

    Wide bandgap semiconductors have entered into Naval radar use and will eventually replace vacuum tube and conventional solid-state amplifiers for all modern military radar and communications applications. Gallium Nitride (GaN...

  7. Taevo Gans / Ene Ammer

    Index Scriptorium Estoniae

    Ammer, Ene

    1998-01-01

    Sisearhitekt Taevo Gansist. Tudengipõlvest, selle aja projektidest, sõpruskonnast, tandemist Summatavet & Gans, Venemaa tellimustest, kaastöölistest. Üksinda Hommilkumaal vene tarbekunsti näitusega 1974. a. 1988. a. loodud perefirmast "GaDis" (omanikud Taevo, Helle Gans, Riia Oja), mis nõustab ka "Wermot" mööbli osas. "GaDise" sisekujundusprojektidest, millega Taevo ja Helle Gans tegelevad üheskoos

  8. Structure guided GANs

    Science.gov (United States)

    Cao, Feidao; Zhao, Huaici; Liu, Pengfei

    2017-11-01

    Generative adversarial networks (GANs) has achieved success in many fields. However, there are some samples generated by many GAN-based works, whose structure is ambiguous. In this work, we propose Structure Guided GANs that introduce structural similar into GANs to overcome the problem. In order to achieve our goal, we introduce an encoder and a decoder into a generator to design a new generator and take real samples as part of the input of a generator. And we modify the loss function of the generator accordingly. By comparison with WGAN, experimental results show that our proposed method overcomes largely sample structure ambiguous and can generate higher quality samples.

  9. Ultra High Power and Efficiency Space Traveling-Wave Tube Amplifier Power Combiner with Reduced Size and Mass for NASA Missions

    Science.gov (United States)

    Simons, Rainee N.; Wintucky, Edwin G.; Wilson, Jeffrey D.; Force, Dale A.

    2009-01-01

    In the 2008 International Microwave Symposium (IMS) Digest version of our paper, recent advances in high power and efficiency space traveling-wave tube amplifiers (TWTAs) for NASA s space-to-Earth communications are presented. The RF power and efficiency of a new K-Band amplifier are 40 W and 50 percent and that of a new Ka-Band amplifier are 200 W and 60 percent. An important figure-of-merit, which is defined as the ratio of the RF power output to the mass (W/kg) of a TWT, has improved by a factor of ten over the previous generation Ka-Band devices. In this extended paper, a high power, high efficiency Ka-band combiner for multiple TWTs, based on a novel hybrid magic-T waveguide circuit design, is presented. The measured combiner efficiency is as high as 90 percent. In addition, at the design frequency of 32.05 GHz, error-free uncoded BPSK/QPSK data transmission at 8 megabits per second (Mbps), which is typical for deep space communications is demonstrated. Furthermore, QPSK data transmission at 622 Mbps is demonstrated with a low bit error rate of 2.4x10(exp -8), which exceeds the deep space state-of-the-art data rate transmission capability by more than two orders of magnitude. A potential application of the TWT combiner is in deep space communication systems for planetary exploration requiring transmitter power on the order of a kilowatt or higher.

  10. Field plated 0.15 μm GaN HEMTs for millimeter-wave application

    International Nuclear Information System (INIS)

    Ren Chunjiang; Li Zhonghui; Yu Xuming; Wang Quanhui; Wang Wen; Chen Tangsheng; Zhang Bin

    2013-01-01

    SiN dielectrically-defined 0.15 μm field plated GaN HEMTs for millimeter-wave application have been presented. The AlGaN/GaN hetero-structure epitaxial material for HEMTs fabrication was grown on a 3-inch SiC substrate with an Fe doped GaN buffer layer by metal-organic chemical deposition. Electron beam lithography was used to define both the gate footprint and the cap of the gate with an integrated field plate. Gate recessing was performed to control the threshold voltage of the devices. The fabricated GaN HEMTs exhibited a unit current gain cut-off frequency of 39 GHz and a maximum frequency of oscillation of 63 GHz. Load-pull measurements carried out at 35 GHz showed a power density of 4 W/mm with associated power gain and power added efficiency of 5.3 dB and 35%, respectively, for a 0.15 mm gate width device operated at a 24 V drain bias. The developed 0.15 μm gate length GaN HEMT technology is suitable for Ka band applications and is ready for millimeter-wave power MMICs development. (semiconductor devices)

  11. Z L GAN

    Indian Academy of Sciences (India)

    Z L GAN. Articles written in Sadhana. Volume 43 Issue 4 April 2018 pp 59. Effect of scale size, orientation type and dispensing method on void formation in the CUF encapsulation of BGA · AIZAT ABAS FEI CHONG NG Z L GAN M H H ISHAK M Z ABDULLAH GEAN YUEN CHONG · More Details Abstract Fulltext PDF.

  12. Calculation of attenuation by rain using the DAH model and diameter of antennas for the Ka Band in Mexico; Calculo de atenuacion por lluvia usando el modelo DAH y diametro de antena para Banda Ka en Mexico

    Energy Technology Data Exchange (ETDEWEB)

    Landeros-Ayala, S.; Neri-Vela, R; Cruz-Sanchez, H.; Hernandez-Bautista, H. [Universidad Nacional Autonoma de Mexico, Mexico, D.F. (Mexico)

    2002-03-01

    In the last years, the peak in the demand of satellite communication service has caused the saturation in the use of the frequencies corresponding to the band, Cand Ku. Due to this, the engineers have looked for viable alternatives, in order to satisfy the current requisition, as well as the future demand, for which a considerable increment is expected. One of these alternatives is the use of the Ka Band (20Hz/30Hz), that is why the importance of studying the propagation effects that are experienced at these frequencies, especially the attenuation effect by rain, as in this case, where it is significant. The present article has the purpose to describe the use of the Modelo DAH (whose authors are Asoka Dissanayake, Jeremy Allnutt and Fatim Haidara), mixed with the global maps of distribution of rain by Crane, for the calculation of the attenuation by rain in satellite communication systems operated in the Ka Band. Besides, antenna diameters for the systems of communications in Ka Band in different locations of the Mexican Republic, using for it the attenuation margins for rain obtained through the Modelo DAH, and using as references the characteristics of the ANIK F2 satellite and a terrestrial station VSAT, are proposed. [Spanish] En los ultimos anos, el auge en la demanda de servicios de comunicacion por satelite ha provocado la saturacion en los uso de la frecuencia correspondientes a las bandas C y Ku. Debido a esta razon, se han buscado alternativas viables para poder satisfacer la demanda actual, asi como la demanda futura, para la cual se espera un incremento considerable. Una de estas alternativas es el uso de Banda Ka (20Hz/30Hz), de ahi la importancia del estudio sobre los efectos de programacion que se experimentan a esta frecuencia, en especial, el efecto de atencion por lluvias, ya que sen este caso resulta ser significativa. El presente articulo tiene como finalidad describir el uso del Modelo DAH (cuyos autores son Asoka Dissanayake, Jeremy Allnutt y

  13. Operation amplifier

    NARCIS (Netherlands)

    Tetsuya, Saito; Nauta, Bram

    2008-01-01

    To provide an operation amplifier which improves power source voltage removal ratios while assuring phase compensation characteristics, and therefore can be realized with a small-scale circuit and low power consumption. SOLUTION: The operation amplifier comprises: a differential amplifier circuit 1;

  14. Operation Amplifier

    NARCIS (Netherlands)

    Tetsuya, Saito; Nauta, Bram

    2011-01-01

    PROBLEM TO BE SOLVED: To provide an operation amplifier which improves power source voltage removal ratios while assuring phase compensation characteristics, and therefore can be realized with a small-scale circuit and low power consumption. SOLUTION: The operation amplifier comprises: a

  15. Operation Amplifier

    NARCIS (Netherlands)

    Tetsuya, S.; Nauta, Bram

    2007-01-01

    PROBLEM TO BE SOLVED: To provide an operation amplifier which improves power source voltage removal ratios while assuring phase compensation characteristics, and therefore can be realized with a small-scale circuit and low power consumption. ; SOLUTION: The operation amplifier comprises: a

  16. Operational amplifiers

    CERN Document Server

    Dostal, Jiri

    1993-01-01

    This book provides the reader with the practical knowledge necessary to select and use operational amplifier devices. It presents an extensive treatment of applications and a practically oriented, unified theory of operational circuits.Provides the reader with practical knowledge necessary to select and use operational amplifier devices. Presents an extensive treatment of applications and a practically oriented, unified theory of operational circuits

  17. Amplifier Distortion

    Science.gov (United States)

    Keeports, David

    2006-12-01

    By definition, a high fidelity amplifier's instantaneous output voltage is directly proportional to its instantaneous input voltage. While high fidelity is generally valued in the amplification of recorded music, nonlinearity, also known as distortion, is desirable in the amplification of some musical instruments. In particular, guitar amplifiers exploit nonlinearity to increase both the harmonic content and sustain of a guitar's sound. I will discuss how both modifications in sound result from saturation of triode tubes and transistors. Additionally, I will describe the difference in the symmetry of saturation curves for transistors and tubes and the reason why tube guitar amplifiers are generally considered to be superior to solid-state amplifiers. Finally, I will discuss attempts to use solid-state electronics to replicate the sound of tube amplifiers.

  18. Benefits and Drawbacks of A High Frequency Gan Zvzcps Converter

    Directory of Open Access Journals (Sweden)

    Blanes J. M.

    2017-01-01

    Full Text Available This paper presents the benefits and drawbacks of replacing the traditional Si Mosfets transistors with enhancement mode GaN transistors in a Half-Bridge Zero Voltage and Zero Current Switching Power Switching (ZVZCPS converter. This type of converters is usually used as Electronic Power Converters (EPC for telecommunication satellites travelling-wave tube amplifiers (TWTAs. In this study, firstly the converter is theoretically analysed, obtaining its operation, losses and efficiency equations. From these equations, optimizations maps based on the main system parameters are obtained. These optimization maps are the key to quantify the potential benefits of GaN transistors in this type of converters. Theoretical results show that using GaN transistors, the frequency of the converter can be pushed from 125kHz to 830kHz without sacrificing the converter efficiency. This frequency increase is directly related to reduction on the EPC size and weight.

  19. Flexible GaN for High Performance, Strainable Radio Frequency Devices (Postprint)

    Science.gov (United States)

    2017-11-02

    wireless systems where consumers will benefit significantly from the high power densities achievable in GaN devices.[8] Further complicating the...future strainable and conformal devices for transmission of radio-frequency (RF) signals over large distances for more efficient wireless communication... power density of traditional RF amplifier materials at different frequencies and wireless generation bands, as well as an image of the flexible GaN

  20. Design and development of a surface micro-machined push–pull-type true-time-delay phase shifter on an alumina substrate for Ka-band T/R module application

    International Nuclear Information System (INIS)

    Dey, Sukomal; Koul, Shiban K

    2012-01-01

    A radio frequency micro-electro-mechanical system (RF-MEMS) phase shifter based on the distributed MEMS transmission line (DMTL) concept towards maximum achievable phase shift with low actuation voltage with good figure of merit (FOM) is presented in this paper. This surface micro-machined analog DMTL phase shifter demonstrates low power consumption for implementation in a Ka-band transmit/receive (T/R) module. The push–pull-type switch has been designed and optimized with an analytical method and validated with simulation, which is the fundamental building block of the design of a true-time-delay phase shifter. Change in phase has been designed and optimized in push and pull states with reference to the up-state performance of the phase shifter. The working principle of this push–pull-type DMTL phase shifter has been comprehensively worked out. A thorough detail of the design and performance analysis of the phase shifter has been carried out with various structural parameters using commercially available simulation tools with reference to a change in phase shift and has been verified using a system level simulation. The phase shifter is fabricated on the alumina substrate, using a suspended gold bridge membrane with a surface micromachining process. Asymmetric behaviour of push–pull bridge configuration has been noted and a corresponding effect on mechanical, electrical and RF performances has been extensively investigated. It is demonstrated 114° dB −1 FOM over 0–40 GHz band, which is the highest achievable FOM from a unit cell on an alumina substrate reported so far. A complete phase shifter contributes to a continuous differential phase shift of 0°–360° over 0–40 GHz band with a minimum actuation voltage of 8.1 V which is the highest achievable phase shift with the lowest actuation voltage as per till date on the alumina substrate with good repeatability and return loss better than 11.5 dB over 0–40 GHz band. (paper)

  1. Surface morphology of homoepitaxial GaN grown on non- and semipolar GaN substrates

    Energy Technology Data Exchange (ETDEWEB)

    Wernicke, Tim; Hoffmann, Veit; Netzel, Carsten; Knauer, Arne; Weyers, Markus [FBH, Berlin (Germany); Ploch, Simon; Rass, Jens [Institute of Solid State Physics, TU Berlin (Germany); Schade, Lukas; Schwarz, Ulrich [IAF, Freiburg (Germany); Kneissl, Michael [FBH, Berlin (Germany); Institute of Solid State Physics, TU Berlin (Germany)

    2010-07-01

    Recently a number of groups have reported laser diodes in the green spectral range on semi- and nonpolar GaN. Nevertheless the growth process on semipolar surfaces is not well understood. In this study 3.5 {mu} m thick MOVPE grown GaN layers on bulk m-plane, (11 anti 22), (10 anti 12), and (10 anti 11) GaN substrates were investigated. XRD rocking curves exhibit a FWHM of less than 150{sup ''}, indicating excellent crystalline quality. But the surface morphology exhibits hillocks with a height of 1 {mu}m and lateral extension of 150 {mu}m in many cases. Depending on the substrate orientation and the growth temperature different hillock shapes were observed. Morphology and luminescence data point to threading dislocations as formation sources. In QWs the hillock structure is reproduced in the emission intensity and wavelength distribution on (10 anti 11) but not on the m-plane surfaces. The hillocks could be eliminated for the semipolar planes (not for the m-plane) by increasing the reactor pressure and lowering the growth temperature. Hillock free separate confinement laser structures emitting at 405 nm feature a very homogeneous luminescence in micro-PL and show amplified spontaneous emission under high power stripe excitation. Furthermore the In incorporation was found to be highest in QWs on (10 anti 11).

  2. Amplified Policymaking

    Science.gov (United States)

    Prince, Katherine; Woempner, Carolyn

    2010-01-01

    This brief examines the policy implications of two drivers of change presented in the "2020 Forecast: Creating the Future of Learning"-- Pattern Recognition and Amplified Organization. These drivers point toward a series of cultural shifts and illuminate how we are developing new ways of organizing, constructing, and managing knowledge.…

  3. Nonlinear characterization of GaN HEMT

    International Nuclear Information System (INIS)

    Chen Chi; Hao Yue; Yang Ling; Quan Si; Ma Xiaohua; Zhang Jincheng

    2010-01-01

    DC I-V output, small signal and an extensive large signal characterization (load-pull measurements) of a GaN HEMT on a SiC substrate with different gate widths of 100 μm and 1 mm have been carried out. From the small signal data, it has been found that the cutoff frequencies increase with gate width varying from 100 μm to 1mm, owing to the reduced contribution of the parasitic effect. The devices investigated with different gate widths are enough to work in the C band and X band. The large signal measurements include the load-pull measurements and power sweep measurements at the C band (5.5 GHz) and X band (8 GHz). When biasing the gate voltage in class AB and selecting the source impedance, the optimum load impedances seen from the device for output power and PAE were localized in the load-pull map. The results of a power sweep at an 8 GHz biased various drain voltage demonstrate that a GaN HEMT on a SiC substrate has good thermal conductivity and a high breakdown voltage, and the CW power density of 10.16 W/mm was obtained. From the results of the power sweep measurement at 5.5 GHz with different gate widths, the actual scaling rules and heat effect on the large periphery device were analyzed, although the effects are not serious. The measurement results and analyses prove that a GaN HEMT on a SiC substrate is an ideal candidate for high-power amplifier design.

  4. Low-order-mode harmonic multiplying gyrotron traveling-wave amplifier in W band

    International Nuclear Information System (INIS)

    Yeh, Y. S.; Chen, C. H.; Yang, S. J.; Lai, C. H.; Lin, T. Y.; Lo, Y. C.; Hong, J. W.; Hung, C. L.; Chang, T. H.

    2012-01-01

    Harmonic multiplying gyrotron traveling-wave amplifiers (gyro-TWAs) allow for magnetic field reduction and frequency multiplication. To avoid absolute instabilities, this work proposes a W-band harmonic multiplying gyro-TWA operating at low-order modes. By amplifying a fundamental harmonic TE 11 drive wave, the second harmonic component of the beam current initiates a TE 21 wave to be amplified. Absolute instabilities in the gyro-TWA are suppressed by shortening the interaction circuit and increasing wall losses. Simulation results reveal that compared with Ka-band gyro-TWTs, the lower wall losses effectively suppress absolute instabilities in the W-band gyro-TWA. However, a global reflective oscillation occurs as the wall losses decrease. Increasing the length or resistivity of the lossy section can reduce the feedback of the oscillation to stabilize the amplifier. The W-band harmonic multiplying gyro-TWA is predicted to yield a peak output power of 111 kW at 98 GHz with an efficiency of 25%, a saturated gain of 26 dB, and a bandwidth of 1.6 GHz for a 60 kV, 7.5 A electron beam with an axial velocity spread of 8%.

  5. Fabrication of p-type porous GaN on silicon and epitaxial GaN

    OpenAIRE

    Bilousov, Oleksandr V.; Geaney, Hugh; Carvajal, Joan J.; Zubialevich, Vitaly Z.; Parbrook, Peter J.; Giguere, A.; Drouin, D.; Diaz, Francesc; Aguilo, Magdalena; O'Dwyer, Colm

    2013-01-01

    Porous GaN layers are grown on silicon from gold or platinum catalyst seed layers, and self-catalyzed on epitaxial GaN films on sapphire. Using a Mg-based precursor, we demonstrate p-type doping of the porous GaN. Electrical measurements for p-type GaN on Si show Ohmic and Schottky behavior from gold and platinum seeded GaN, respectively. Ohmicity is attributed to the formation of a Ga2Au intermetallic. Porous p-type GaN was also achieved on epitaxial n-GaN on sapphire, and transport measurem...

  6. Spatial Power Combining Amplifier for Ground and Flight Applications

    Science.gov (United States)

    Velazco, J. E.; Taylor, M.

    2016-11-01

    -sections than comparable klystrons and traveling-wave tube counterparts and thus avoid RF breakdown and thermal issues common to vacuum tubes. We present a basic description of the SPCA mechanism and initial results of an S-band (2.4 GHz) 100-W, 45-dB gain SPCA prototype. We also discuss future X-band (8.4 GHz), Ka-band (32 GHz), and W-band (94 GHz) SPCA designs for both radar and communications applications.

  7. GaN Bulk Growth and Epitaxy from Ca-Ga-N Solutions, Phase II

    Data.gov (United States)

    National Aeronautics and Space Administration — The innovations proposed here are Ka-band (38 GHz) group III-nitride power FETs and the dislocation density reducing epitaxial growth methods (LPE) needed for their...

  8. Amplifier for nuclear spectrometry

    International Nuclear Information System (INIS)

    Suarez Canner, E.

    1996-01-01

    The spectroscopy amplifier model AE-020 is designed to adjust suitable the pulses coming from nuclear radiation detectors. Due to is capacity and specifications, the amplifier can be used together with high and medium resolution spectroscopy system

  9. Portable musical instrument amplifier

    Science.gov (United States)

    Christian, David E.

    1990-07-24

    The present invention relates to a musical instrument amplifier which is particularly useful for electric guitars. The amplifier has a rigid body for housing both the electronic system for amplifying and processing signals from the guitar and the system's power supply. An input plug connected to and projecting from the body is electrically coupled to the signal amplifying and processing system. When the plug is inserted into an output jack for an electric guitar, the body is rigidly carried by the guitar, and the guitar is operatively connected to the electrical amplifying and signal processing system without use of a loose interconnection cable. The amplifier is provided with an output jack, into which headphones are plugged to receive amplified signals from the guitar. By eliminating the conventional interconnection cable, the amplifier of the present invention can be used by musicians with increased flexibility and greater freedom of movement.

  10. Amplification factor variable amplifier

    NARCIS (Netherlands)

    Akitsugu, Oshita; Nauta, Bram

    2007-01-01

    PROBLEM TO BE SOLVED: To provide an amplification factor variable amplifier capable of achieving temperature compensation of an amplification factor over a wide variable amplification factor range. ; SOLUTION: A Gilbert type amplification factor variable amplifier 11 amplifies an input signal and

  11. Amplification factor variable amplifier

    NARCIS (Netherlands)

    Akitsugu, Oshita; Nauta, Bram

    2010-01-01

    PROBLEM TO BE SOLVED: To provide an amplification factor variable amplifier capable of achieving temperature compensation of an amplification factor over a wide variable amplification factor range. ;SOLUTION: A Gilbert type amplification factor variable amplifier 11 amplifies an input signal and can

  12. 2.45 GHz Class E Power Amplifier for a Transmitter Combining LINC and EER

    Directory of Open Access Journals (Sweden)

    M. Dirix

    2009-01-01

    Full Text Available A 10 W class-E RF power amplifier (PA is designed and fabricated using a Cree GaN HEMT. The proposed PA uses an innovative input circuit to optimize band with. At 2.45 GHz the PA achieves a PAE of 60 % at an outputpower of 40 dBm. The resulting amplifier is simulated and constructed using a transmissionline topology. Two of these amplifiers are fabricated on a single board for outphasing application. Their suitability for outphasing application and supply modulation is investigated. 

  13. High-Power Ka-Band Window and Resonant Ring

    International Nuclear Information System (INIS)

    Jay L. Hirshfield

    2006-01-01

    A stand-alone 200 MW rf test station is needed for carrying out development of accelerator structures and components for a future high-gradient multi-TeV collider, such as CLIC. A high-power rf window is needed to isolate the test station from a structure element under test. This project aimed to develop such a window for use at a frequency in the range 30-35 GHz, and to also develop a high-power resonant ring for testing the window. During Phase I, successful conceptual designs were completed for the window and the resonant ring, and cold tests of each were carried out that confirmed the designs

  14. Triple Play over Satellite, Ka-Band Making the Difference

    Science.gov (United States)

    Benoit, Guillaume; Fenech, Hector; Pezzana, Stefano

    Over the last years a number of operators have been deploying satellite-based consumer internet access services to reduce the digital divide and capture the market of households not covered by ADSL, cable or wireless broadband. These operators are proposing a step change improvement in the economics of consumer service, with lower terminal costs, broadband access with monthly fees comparable to ADSL and an integrated technology simplifying the process of terminal installation, provisioning and management.

  15. Miniature Ka-band Automated Swath Mapper (KASM), Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — This proposal discusses the development and demonstration of a swath-based airborne instrument suite intended as a calibration and validation with relevance to the...

  16. Oscillators and operational amplifiers

    OpenAIRE

    Lindberg, Erik

    2005-01-01

    A generalized approach to the design of oscillators using operational amplifiers as active elements is presented. A piecewise-linear model of the amplifier is used so that it make sense to investigate the eigenvalues of the Jacobian of the differential equations. The characteristic equation of the general circuit is derived. The dynamic nonlinear transfer characteristic of the amplifier is investigated. Examples of negative resistance oscillators are discussed.

  17. FLUIDIC AC AMPLIFIERS.

    Science.gov (United States)

    Several fluidic tuned AC Amplifiers were designed and tested. Interstage tuning and feedback designs are considered. Good results were obtained...corresponding Q’s as high as 12. Element designs and test results of one, two, and three stage amplifiers are presented. AC Modulated Carrier Systems

  18. Antares laser power amplifier

    International Nuclear Information System (INIS)

    Stine, R.D.; Ross, G.F.; Silvernail, C.

    1979-01-01

    The overall design of the Antares laser power amplifier is discussed. The power amplifier is the last stage of amplification in the 100-kJ Antares laser. In the power amplifier a single, cylindrical, grid-controlle, cold-cathode electron gun is surrounded by 12 large-aperture CO 2 electron-beam sustained laser discharge sectors. Each power amplifier will deliver 18 kJ and the six modules used in Antares will produce the required 100 kJ for delivery to the target. A large-scale interaction between optical, mechanical, and electrical disciplines is required to meet the design objectives. Significant component advances required by the power amplifier design are discussed

  19. X-parameter Based GaN Device Modeling and its Application to a High-efficiency PA Design

    DEFF Research Database (Denmark)

    Wang, Yelin; Nielsen, Troels Studsgaard; Jensen, Ole Kiel

    2014-01-01

    X-parameters are supersets of S-parameters and applicable to both linear and nonlinear system modeling. In this paper, a packaged 6 W Gallium Nitride (GaN) RF power transistor is modeled using load-dependent X-parameters by simulations. During the device characterization the load impedance is tuned...... to decrease the complexity of a harmonic load-pull measurement setup. A high-efficiency 2 GHz power amplifier is also designed for further validation of the concept....

  20. Auto-Zero Differential Amplifier

    Science.gov (United States)

    Quilligan, Gerard T. (Inventor); Aslam, Shahid (Inventor)

    2017-01-01

    An autozero amplifier may include a window comparator network to monitor an output offset of a differential amplifier. The autozero amplifier may also include an integrator to receive a signal from a latched window comparator network, and send an adjustment signal back to the differential amplifier to reduce an offset of the differential amplifier.

  1. Photoconductive GaN UV Detectors

    National Research Council Canada - National Science Library

    Baranowski, Jacek

    1999-01-01

    This report results from a contract tasking University of Warsaw as follows: The contractor will investigate the growth of GaN material using atmospheric pressure metalorganic chemical vapor deposition method (MOCVD...

  2. Gallium nitride based transistors for high-efficiency microwave switch-mode amplifiers

    Energy Technology Data Exchange (ETDEWEB)

    Maroldt, Stephan

    2012-07-01

    Highly-efficient switch-mode power amplifiers form key elements in future fully-digital base stations for mobile communication. This novel digital base station concept reduces system energy consumption, complexity, size and costs, while the flexibility in terms of multi-band operation and signal modulation improves. In this work, innovative core circuits for digital high-efficiency class-D and class-S power amplifiers based on gallium nitride (GaN) technology were developed for the application in digital base stations. A combination of optimized GaN devices and improvements in circuit design allow a highly-efficient switch-mode operation at mobile communication frequencies between 0.45 GHz and 2 GHz. Transistor device modeling for switch-mode operation, the simulation environment, and a broadband measurement system were established for the design and evaluation of digital switchmode power amplifiers. The design of broadband core circuits for switch-mode amplifier concepts was analyzed for dual-stage amplifier circuits, using an initial GaN technology with a gate length of 0.25 {mu}m. A speed-enhanced driver stage improved the circuit switching speed sufficiently above 1 GHz. Speed and efficiency of the amplifier core circuits were studied related to transistor parameters like cut-off frequency or gate capacitance. A reduced gate length was found to improve the switching speed, while a lower on-resistance allows the reduction of the inherent static losses of the GaN-based switches. Apart from this, the restriction of a 50 Ohm environment was found to be a major output power and switching speed limitation, due to a poor switching drive capability of the input capacitance of the GaN circuit. Finally, the optimized transistor and circuit design with an output gate width of 1.2 mm were effectively implemented in the given environment for an operation up to 2 GHz with a high drain efficiency of >65% and a digital output power of 5 W. A maximum output power of 9.7 W and a

  3. Noise in Optical Amplifiers

    DEFF Research Database (Denmark)

    Jeppesen, Palle

    1997-01-01

    Noise in optical amplifiers is discussed on the basis of photons and electromagntic fields. Formulas for quantum noise from spontaneous emission, signal-spontaneous beat noise and spontaneous-spontaneous beat noise are derived.......Noise in optical amplifiers is discussed on the basis of photons and electromagntic fields. Formulas for quantum noise from spontaneous emission, signal-spontaneous beat noise and spontaneous-spontaneous beat noise are derived....

  4. P-type surface effects for thickness variation of 2um and 4um of n-type layer in GaN LED

    Science.gov (United States)

    Halim, N. S. A. Abdul; Wahid, M. H. A.; Hambali, N. A. M. Ahmad; Rashid, S.; Ramli, M. M.; Shahimin, M. M.

    2017-09-01

    The internal quantum efficiency of III-Nitrides group, GaN light-emitting diode (LED) has been considerably limited due to the insufficient hole injection and this is caused by the lack of performance p-type doping and low hole mobility. The low hole mobility makes the hole less energetic, thus reduced the performance operation of GaN LED itself. The internal quantum efficiency of GaN-based LED with surface roughness (texture) can be changed by texture size, density, and thickness of GaN film or by the combined effects of surface shape and thickness of GaN film. Besides, due to lack of p-type GaN, attempts to look forward the potential of GaN LED relied on the thickness of n-type layer and surface shape of p-type GaN layer. This work investigates the characteristics of GaN LED with undoped n-GaN layer of different thickness and the surface shape of p-type layer. The LEDs performance is significantly altered by modifying the thickness and shape. Enhancement of n-GaN layer has led to the annihilation of electrical conductivity of the chip. Different surface geometry governs the emission rate extensively. Internal quantum efficiency is also predominantly affected by the geometry of n-GaN layer which subjected to the current spreading. It is recorded that the IQE droop can be minimized by varying the thickness of the active layer without amplifying the forward voltage. Optimum forward voltage (I-V), total emission rate relationship with the injected current and internal quantum efficiency (IQE) for 2,4 µm on four different surfaces of p-type layer are also reported in this paper.

  5. Stability analysis of a coaxial-waveguide gyrotron traveling-wave amplifier

    International Nuclear Information System (INIS)

    Hung, C.L.; Yeh, Y.S.

    2005-01-01

    The gyrotron traveling-wave tube (gyro-TWT) amplifier is known to be highly susceptible to spurious oscillations. This study develops a simulation approach to analyze the stability of a coaxial-waveguide gyro-TWT with distributed wall losses. The interplay among the absolute instabilities, the gyrotron backward-wave oscillations, and the circuit parameters is analyzed. Simulation results reveal that the distributed wall losses effectively stabilize spurious oscillations in the coaxial gyro-TWT. Furthermore, the wall resistivity of the center conductor is shown to be an additional effective mechanism for suppressing oscillations. Under stable operation conditions, the coaxial gyro-TWT with distributed losses is predicted to generate 435 kW in the Ka band with 31% efficiency, a saturated gain of 45 dB, and a bandwidth of 1.86 GHz (≅5.8%) for a 70 kV, 20 A electron beam with an α(=ν perpendicular )/ν z )=1.0 and an axial velocity spread of Δν z /ν z =5%

  6. AlGaN/GaN-HEMT power amplifiers with optimized power-added efficiency for X-band applications

    OpenAIRE

    Kühn, J.

    2011-01-01

    This work has arisen out of the strong demand for a superior power-added efficiency (PAE) of AlGaN/GaN high electron mobility transistor (HEMT) high-power amplifiers (HPAs) that are part of any advanced wireless multifunctional RF-system with limited prime energy. Different concepts and approaches on device and design level for PAE improvements are analyzed, e.g. structural and layout changes of the GaN transistor and advanced circuit design techniques for PAE improvements of GaN HEMT HPAs.

  7. The Formation and Characterization of GaN Hexagonal Pyramids

    Science.gov (United States)

    Zhang, Shi-Ying; Xiu, Xiang-Qian; Lin, Zeng-Qin; Hua, Xue-Mei; Xie, Zi-Li; Zhang, Rong; Zheng, You-Dou

    2013-05-01

    GaN with hexagonal pyramids is fabricated using the photo-assisted electroless chemical etching method. Defective areas of the GaN substrate are selectively etched in a mixed solution of KOH and K2S2O8 under ultraviolet illumination, producing submicron-sized pyramids. Hexagonal pyramids on the etched GaN with well-defined {101¯1¯} facets and very sharp tips are formed. High-resolution x-ray diffraction shows that etched GaN with pyramids has a higher crystal quality, and micro-Raman spectra reveal a tensile stress relaxation in GaN with pyramids compared with normal GaN. The cathodoluminescence intensity of GaN after etching is significantly increased by three times, which is attributed to the reduction in the internal reflection, high-quality GaN with pyramids and the Bragg effect.

  8. A Frontal Attack on Limiting Defects in GaN

    National Research Council Canada - National Science Library

    Morkoc, Hadis

    2002-01-01

    GaN community, particularly under the leadership of Drs. Wood, Win, and Litton, recognized that it is imperative that the extended, and point defects in GaN and related materials, and the mechanisms for their formation are understood...

  9. GaN Nanowires Synthesized by Electroless Etching Method

    KAUST Repository

    Najar, Adel; Anjum, Dalaver H.; Ng, Tien Khee; Ooi, Boon S.; Ben Slimane, Ahmed

    2012-01-01

    Ultra-long Gallium Nitride Nanowires is synthesized via metal-electroless etching method. The morphologies and optical properties of GaN NWs show a single crystal GaN with hexagonal Wurtzite structure and high luminescence properties.

  10. Synthetic Strategies and Applications of GaN Nanowires

    Directory of Open Access Journals (Sweden)

    Guoquan Suo

    2014-01-01

    Full Text Available GaN is an important III-V semiconductor material with a direct band gap of 3.4 eV at 300 K. The wide direct band gap makes GaN an attractive material for various applications. GaN nanowires have demonstrated significant potential as fundamental building blocks for nanoelectronic and nanophotonic devices and also offer substantial promise for integrated nanosystems. In this paper, we provide a comprehensive review on the general synthetic strategies, characterizations, and applications of GaN nanowires. We first summarize several growth techniques of GaN nanowires. Subsequently, we discuss mechanisms involved to generate GaN nanowires from different synthetic schemes and conditions. Then we review some characterization methods of GaN nanowires. Finally, several kinds of main applications of GaN nanowires are discussed.

  11. Silicon—a new substrate for GaN growth

    Indian Academy of Sciences (India)

    Unknown

    of GaN devices based on silicon is the thermal mismatch of GaN and Si, which generates cracks. In 1998, the .... Considerable research is being carried out on GaN HEMTs at present. ... by InGaN/GaN multiquantum well in MOVPE was first.

  12. Electrospun amplified fiber optics.

    Science.gov (United States)

    Morello, Giovanni; Camposeo, Andrea; Moffa, Maria; Pisignano, Dario

    2015-03-11

    All-optical signal processing is the focus of much research aiming to obtain effective alternatives to existing data transmission platforms. Amplification of light in fiber optics, such as in Erbium-doped fiber amplifiers, is especially important for efficient signal transmission. However, the complex fabrication methods involving high-temperature processes performed in a highly pure environment slow the fabrication process and make amplified components expensive with respect to an ideal, high-throughput, room temperature production. Here, we report on near-infrared polymer fiber amplifiers working over a band of ∼20 nm. The fibers are cheap, spun with a process entirely carried out at room temperature, and shown to have amplified spontaneous emission with good gain coefficients and low levels of optical losses (a few cm(-1)). The amplification process is favored by high fiber quality and low self-absorption. The found performance metrics appear to be suitable for short-distance operations, and the large variety of commercially available doping dyes might allow for effective multiwavelength operations by electrospun amplified fiber optics.

  13. Fast pulse amplifier

    International Nuclear Information System (INIS)

    Lepetit, J.; Poussier, E.

    1984-01-01

    This amplifier comprises an inverter transformer, the primary circuit of which receives a pulse and the secondary circuit of which is connected to several amplifying elements in parallel. The inverter transformer is made of coaxial cable segments winded around a magnetic torus; the cable cores connected in series constitute the primary circuit and the braiding of cables, connected in parallel, are the secondary circuit. The transformer comprises, besides, delay lines in series with each braiding of the secondary circuit, these ones are such that pulses issued from each braiding arrive together to the secondary circuit connectors. This invention applies, noticeably in the case of a high voltage amplifier, to the control of deflection blocks of particles used in medicine or in particle accelerators [fr

  14. Fast logarithmic amplifier

    International Nuclear Information System (INIS)

    Tai, I.; Hasegawa, K.

    1975-01-01

    This paper reports on the improvement of frequency characteristics of a logarithmic amplifier with a Paterson transdiode connection. The improvement of the response speed has been achieved by using a phase compensation technique. Small signal response analyses of the logging circuit revealed the effects of a series resistor Rsub(p) and a parallel capacitance Csub(p) on the response of the circuit. The improvement of the frequency characteristics are remarkable at higher current levels. These facts were proved by the practical logarithmic amplifier. (auth.)

  15. RenderGAN: Generating Realistic Labeled Data

    Directory of Open Access Journals (Sweden)

    Leon Sixt

    2018-06-01

    Full Text Available Deep Convolutional Neuronal Networks (DCNNs are showing remarkable performance on many computer vision tasks. Due to their large parameter space, they require many labeled samples when trained in a supervised setting. The costs of annotating data manually can render the use of DCNNs infeasible. We present a novel framework called RenderGAN that can generate large amounts of realistic, labeled images by combining a 3D model and the Generative Adversarial Network framework. In our approach, image augmentations (e.g., lighting, background, and detail are learned from unlabeled data such that the generated images are strikingly realistic while preserving the labels known from the 3D model. We apply the RenderGAN framework to generate images of barcode-like markers that are attached to honeybees. Training a DCNN on data generated by the RenderGAN yields considerably better performance than training it on various baselines.

  16. Gan-Hang tectonic belt and its geologic significance

    International Nuclear Information System (INIS)

    Deng Jiarui; Zhang Zhiping.

    1989-01-01

    Gan-Hang tectonic belt is predominantly controlled by Gan-Hang fracture zone. It is mainly composed of Yongfeng-Zhuji downwarping zone, Gan-Hang volcanic activity structural belt and Gan-Hang red basin downfaulted zone. Gan-Hang fracture zone is derived from evolution and development of Shaoxing-Jiangshan deep fracture. It is mainly composed of three deep and large fracture and Fuzhou-Yongfeng large fracture. The fracture zone is a long active belt, but in each active period the geologic structural patterns intensity, depth and forming time were not same. Gan-Hang tectonic belt possesses obvious inheritance. It has always maintained the character of the relative depression or low land since the Caledonian movement. This specific structural environment is favourable for uranium mineralization. At any rate, the formation of this uranium minerogenetic zone has been experiencing a long and complicated processes which were closely associated with long activity of Gan-Hang fracture zone

  17. Piezotronic Effect in Polarity-Controlled GaN Nanowires.

    Science.gov (United States)

    Zhao, Zhenfu; Pu, Xiong; Han, Changbao; Du, Chunhua; Li, Linxuan; Jiang, Chunyan; Hu, Weiguo; Wang, Zhong Lin

    2015-08-25

    Using high-quality and polarity-controlled GaN nanowires (NWs), we studied the piezotronic effect in crystal orientation defined wurtzite structures. By applying a normal compressive force on c-plane GaN NWs with an atomic force microscopy tip, the Schottky barrier between the Pt tip and GaN can be effectively tuned by the piezotronic effect. In contrast, the normal compressive force cannot change the electron transport characteristics in m-plane GaN NWs whose piezoelectric polarization axis is turned in the transverse direction. This observation provided solid evidence for clarifying the difference between the piezotronic effect and the piezoresistive effect. We further demonstrated a high sensitivity of the m-plane GaN piezotronic transistor to collect the transverse force. The integration of c-plane GaN and m-plane GaN indicates an overall response to an external force in any direction.

  18. Growth of InGaN multiple quantum wells and GaN eplilayer on GaN substrate

    International Nuclear Information System (INIS)

    Lee, Sung-Nam; Paek, H.S.; Son, J.K.; Sakong, T.; Yoon, E.; Nam, O.H.; Park, Y.

    2006-01-01

    We investigated that the surface morphology of GaN epilayers was significantly affected by the surface tilt orientation of GaN substrate. Surface morphologies of GaN epilayers on GaN substrates show three types: mirror, wavy, and hillock. These surface morphologies are dependent on the surface orientation of GaN substrates. It is found that the hillock morphology of GaN epilayer was formed on the GaN substrate with surface tilt orientation less than 0.1 o . As the surface tilt angle increased to 0.35 o , the surface morphology varied from hillock to wavy morphology. Above a surface tilt angle of 0.4 o , surface morphology changed to the mirror-like type morphology. Additionally, these three types of GaN surface morphology also affected the optical quality of GaN epilayers as well as InGaN multiple quantum wells on GaN substrates by non-uniform In incorporation on the different surface morphologies of GaN epilayers

  19. Implantation doping of GaN

    International Nuclear Information System (INIS)

    Zolper, J.C.

    1996-01-01

    Ion implantation has played an enabling role in the realization of many high performance photonic and electronic devices in mature semiconductor materials systems such as Si and GaAs. This can also be expected to be the case in III-Nitride based devices as the material quality continues to improve. This paper reviews the progress in ion implantation processing of the III-Nitride materials, namely, GaN, AlN, InN and their alloys. Details are presented of the successful demonstrations of implant isolation as well as n- and p-type implantation doping of GaN. Implant doping has required activation annealing at temperatures in excess of 1,000 C. The nature of the implantation induced damage and its response to annealing is addressed using Rutherford Backscattering. Finally, results are given for the first demonstration of a GaN device fabricated using ion implantation doping, a GaN junction field effect transistor (JFET)

  20. Amplifying genetic logic gates.

    Science.gov (United States)

    Bonnet, Jerome; Yin, Peter; Ortiz, Monica E; Subsoontorn, Pakpoom; Endy, Drew

    2013-05-03

    Organisms must process information encoded via developmental and environmental signals to survive and reproduce. Researchers have also engineered synthetic genetic logic to realize simpler, independent control of biological processes. We developed a three-terminal device architecture, termed the transcriptor, that uses bacteriophage serine integrases to control the flow of RNA polymerase along DNA. Integrase-mediated inversion or deletion of DNA encoding transcription terminators or a promoter modulates transcription rates. We realized permanent amplifying AND, NAND, OR, XOR, NOR, and XNOR gates actuated across common control signal ranges and sequential logic supporting autonomous cell-cell communication of DNA encoding distinct logic-gate states. The single-layer digital logic architecture developed here enables engineering of amplifying logic gates to control transcription rates within and across diverse organisms.

  1. Flashlamp excited fluid laser amplified

    International Nuclear Information System (INIS)

    1976-01-01

    The patent describes a laser amplifier with chambers for containing and amplifying an intensifier medium. It serves the need for a large impulse repetition rate and high intensities as required e.g. for laser isotope separation

  2. GaN Micromechanical Resonators with Meshed Metal Bottom Electrode.

    Science.gov (United States)

    Ansari, Azadeh; Liu, Che-Yu; Lin, Chien-Chung; Kuo, Hao-Chung; Ku, Pei-Cheng; Rais-Zadeh, Mina

    2015-03-17

    This work describes a novel architecture to realize high-performance gallium nitride (GaN) bulk acoustic wave (BAW) resonators. The method is based on the growth of a thick GaN layer on a metal electrode grid. The fabrication process starts with the growth of a thin GaN buffer layer on a Si (111) substrate. The GaN buffer layer is patterned and trenches are made and refilled with sputtered tungsten (W)/silicon dioxide (SiO₂) forming passivated metal electrode grids. GaN is then regrown, nucleating from the exposed GaN seed layer and coalescing to form a thick GaN device layer. A metal electrode can be deposited and patterned on top of the GaN layer. This method enables vertical piezoelectric actuation of the GaN layer using its largest piezoelectric coefficient ( d 33 ) for thickness-mode resonance. Having a bottom electrode also results in a higher coupling coefficient, useful for the implementation of acoustic filters. Growth of GaN on Si enables releasing the device from the frontside using isotropic xenon difluoride (XeF₂) etch and therefore eliminating the need for backside lithography and etching.

  3. GaN based nanorods for solid state lighting

    Energy Technology Data Exchange (ETDEWEB)

    Li Shunfeng; Waag, Andreas [Institute of Semiconductor Technology, Braunschweig University of Technology, 38106 Braunschweig (Germany)

    2012-04-01

    In recent years, GaN nanorods are emerging as a very promising novel route toward devices for nano-optoelectronics and nano-photonics. In particular, core-shell light emitting devices are thought to be a breakthrough development in solid state lighting, nanorod based LEDs have many potential advantages as compared to their 2 D thin film counterparts. In this paper, we review the recent developments of GaN nanorod growth, characterization, and related device applications based on GaN nanorods. The initial work on GaN nanorod growth focused on catalyst-assisted and catalyst-free statistical growth. The growth condition and growth mechanisms were extensively investigated and discussed. Doping of GaN nanorods, especially p-doping, was found to significantly influence the morphology of GaN nanorods. The large surface of 3 D GaN nanorods induces new optical and electrical properties, which normally can be neglected in layered structures. Recently, more controlled selective area growth of GaN nanorods was realized using patterned substrates both by metalorganic chemical vapor deposition (MOCVD) and by molecular beam epitaxy (MBE). Advanced structures, for example, photonic crystals and DBRs are meanwhile integrated in GaN nanorod structures. Based on the work of growth and characterization of GaN nanorods, GaN nanoLEDs were reported by several groups with different growth and processing methods. Core/shell nanoLED structures were also demonstrated, which could be potentially useful for future high efficient LED structures. In this paper, we will discuss recent developments in GaN nanorod technology, focusing on the potential advantages, but also discussing problems and open questions, which may impose obstacles during the future development of a GaN nanorod based LED technology.

  4. GaN membrane MSM ultraviolet photodetectors

    Science.gov (United States)

    Muller, A.; Konstantinidis, G.; Kostopoulos, A.; Dragoman, M.; Neculoiu, D.; Androulidaki, M.; Kayambaki, M.; Vasilache, D.; Buiculescu, C.; Petrini, I.

    2006-12-01

    GaN exhibits unique physical properties, which make this material very attractive for wide range of applications and among them ultraviolet detection. For the first time a MSM type UV photodetector structure was manufactured on a 2.2 μm. thick GaN membrane obtained using micromachining techniques. The low unintentionally doped GaN layer structure was grown by MOCVD on high resistivity (ρ>10kΩcm) oriented silicon wafers, 500μm thick. The epitaxially grown layers include a thin AlN layer in order to reduce the stress in the GaN layer and avoid cracking. Conventional contact lithography, e-gun Ni/Au (10nm /200nm) evaporation and lift-off techniques were used to define the interdigitated Schottky metalization on the top of the wafer. Ten digits with a width of 1μm and a length of 100μm were defined for each electrode. The distance between the digits was also 1μm. After the backside lapping of the wafer to a thickness of approximately 150μm, a 400nm thick Al layer was patterned and deposited on the backside, to be used as mask for the selective reactive ion etching of silicon. The backside mask, for the membrane formation, was patterned using double side alignment techniques and silicon was etched down to the 2.2μm thin GaN layer using SF 6 plasma. A very low dark current (30ρA at 3V) was obtained. Optical responsivity measurements were performed at 1.5V. A maximum responsivity of 18mA/W was obtained at a wavelength of 370nm. This value is very good and can be further improved using transparent contacts for the interdigitated structure.

  5. Improved-Bandwidth Transimpedance Amplifier

    Science.gov (United States)

    Chapsky, Jacob

    2009-01-01

    The widest available operational amplifier, with the best voltage and current noise characteristics, is considered for transimpedance amplifier (TIA) applications where wide bandwidth is required to handle fast rising input signals (as for time-of-flight measurement cases). The added amplifier inside the TIA feedback loop can be configured to have slightly lower voltage gain than the bandwidth reduction factor.

  6. Millimeter-Wave GaN MMIC Integration with Additive Manufacturing

    Science.gov (United States)

    Coffey, Michael

    This thesis addresses the analysis, design, integration and test of microwave and millimeter-wave monolithic microwave integrated circuits (MMIC or MMICs). Recent and ongoing progress in semiconductor device fabrication and MMIC processing technology has pushed the upper limit in MMIC frequencies from millimeter-wave (30-300 GHz) to terahertz (300-3000 GHz). MMIC components operating at these frequencies will be used to improve the sensitivity and performance of radiometers, receivers for communication systems, passive remote sensing systems, transceivers for radar instruments and radio astronomy systems. However, a serious hurdle in the utilization of these MMIC components, and a main topic presented in this thesis, is the development and reliable fabrication of practical packaging techniques. The focus of this thesis is the investigation of first, the design and analysis of microwave and millimeter-wave GaN MMICs and second, the integration of those MMICs into usable waveguide components. The analysis, design and testing of various X-band (8-12 GHz) thru H-band (170-260 GHz) GaN MMIC power amplifier (PA or PAs), including a V-band (40-75 GHz) voltage controlled oscillator, is the majority of this work. Several PA designs utilizing high-efficiency techniques are analyzed, designed and tested. These examples include a 2nd harmonic injection amplifier, a Class-E amplifier fabricated with a GaN-on-SiC 300 GHz fT process, and an example of the applicability of supply-modulation with a Doherty power amplifier, all operating at 10 GHz. Two H-band GaN MMIC PAs are designed, one with integrated CPW-to-waveguide transitions for integration. The analysis of PA stability is especially important for wideband, high- fT devices and a new way of analyzing stability is explored and experimentally validated. Last, the challenges of integrating MMICs operating at millimeter-wave frequencies are discussed and assemblies using additive and traditional manufacturing are demonstrated.

  7. An integrated continuous class-F-1 mode power amplifier design approach for microwave enhanced portable diagnostic applications

    OpenAIRE

    Imtiaz, Azeem; Lees, Jonathan; Choi, Heungjae; Joshi, Lovleen Tina

    2015-01-01

    © 2015 IEEE. This paper presents a novel technique for designing a microwave power delivery system targeted at compact and portable microwave-assisted diagnostic healthcare applications to help tackle the growing problem of anti-microbial resistance. The arrangement comprises a purpose-built cylindrical cavity resonator within which, the bacterial samples are exposed, driven by a high-efficiency 10-W GaN amplifier, critically coupled via a simple, adjustable internal loop antenna. The experim...

  8. A broadband high-efficiency Doherty power amplifier using symmetrical devices

    Science.gov (United States)

    Cheng, Zhiqun; Zhang, Ming; Li, Jiangzhou; Liu, Guohua

    2018-04-01

    This paper proposes a method for broadband and high-efficiency amplification of Doherty power amplifier (DPA) using symmetric devices. In order to achieve the perfect load modulation, the carrier amplifier output circuit total power length is designed to odd multiple of 90°, and the peak amplifier output total power length is designed to even multiple of 180°. The proposed method is demonstrated by designing a broadband high-efficiency DPA using identical 10-W packaged GaN HEMT devices. Measurement results show that over 51% drain efficiency is achieved at 6-dB back-off power, over the frequency band of 1.9–2.4 GHz. Project supported by the National Natural Science Foundation of China (No. 60123456), the Zhejiang Provincial Natural Science Foundation of China (No. LZ16F010001), and the Zhejiang Provincial Public Technology Research Project (No. 2016C31070).

  9. Induced defects in neutron irradiated GaN single crystals

    International Nuclear Information System (INIS)

    Park, I. W.; Koh, E. K.; Kim, Y. M.; Choh, S. H.; Park, S. S.; Kim, B. G.; Sohn, J. M.

    2005-01-01

    The local structure of defects in undoped, Si-doped, and neutron irradiated free standing GaN bulk crystals, grown by hydride vapor phase epitaxy, has been investigated by employing Raman scattering and cathodoluminescence. The GaN samples were irradiated to a dose of 2 x 10 17 neutrons in an atomic reactor at Korea Atomic Energy Research Institute. There was no appreciable change in the Raman spectra for undoped GaN samples before and after neutron irradiation. However, a forbidden transition, A 1 (TO) mode, appeared for a neutron irradiated Si-doped GaN crystal. Cathodoluminescence spectrum for the neutron irradiated Si-doped GaN crystal became much more broadened than that for the unirradiated one. The experimental results reveal the generation of defects with locally deformed structure in the wurtzite Si-doped GaN single crystal

  10. GaN Nanowire Arrays for High-Output Nanogenerators

    KAUST Repository

    Huang, Chi-Te

    2010-04-07

    Three-fold symmetrically distributed GaN nanowire (NW) arrays have been epitaxially grown on GaN/sapphire substrates. The GaN NW possesses a triangular cross section enclosed by (0001), (2112), and (2112) planes, and the angle between the GaN NW and the substrate surface is ∼62°. The GaN NW arrays produce negative output voltage pulses when scanned by a conductive atomic force microscope in contact mode. The average of piezoelectric output voltage was about -20 mV, while 5-10% of the NWs had piezoelectric output voltages exceeding -(0.15-0.35) V. The GaN NW arrays are highly stable and highly tolerate to moisture in the atmosphere. The GaN NW arrays demonstrate an outstanding potential to be utilized for piezoelectric energy generation with a performance probably better than that of ZnO NWs. © 2010 American Chemical Society.

  11. Simplified design of IC amplifiers

    CERN Document Server

    Lenk, John

    1996-01-01

    Simplified Design of IC Amplifiers has something for everyone involved in electronics. No matter what skill level, this book shows how to design and experiment with IC amplifiers. For experimenters, students, and serious hobbyists, this book provides sufficient information to design and build IC amplifier circuits from 'scratch'. For working engineers who design amplifier circuits or select IC amplifiers, the book provides a variety of circuit configurations to make designing easier.Provides basics for all phases of practical design.Covers the most popular forms for amplif

  12. Stabilization of the potential multi-steady-state absolute instabilities in a gyrotron traveling-wave amplifier

    International Nuclear Information System (INIS)

    Du Chaohai; Liu Pukun

    2009-01-01

    The problem of spurious oscillations induced by absolute instabilities is the most challenging one that hinders the development of the millimeter-wave gyrotron traveling-wave amplifiers (gyro-TWTs). A spurious oscillation exists as a high order axial mode (HOAM) in the interaction circuit. This paper is devoted to demonstrating the complicated steady states of these HOAMs and exploring corresponding techniques to stabilize these potential multi-steady-state absolute instabilities. The stability-oriented design principle is conveyed in a start-to-end design flow of a Ka-band TE 11 mode gyro-TWT. Strong magnetic tapering near the downstream port, which is capable of cutting short the effective interaction circuit of a spurious oscillation and simultaneously boosting the amplification performance, is for the first time proposed to further improve the system stability. It is also found that an ideal prebunched electron beam in the linear stage is the necessary condition to efficient amplification in the nonlinear stage, suggesting that it is feasible to design a stable prebunching stage to replace the distributed-loss-loaded linear stage. The stability-oriented design principle provides more explicit reference for future design of a zero-drive stable gyro-TWT.

  13. Wideband amplifier design

    CERN Document Server

    Hollister, Allen L

    2007-01-01

    In this book, the theory needed to understand wideband amplifier design using the simplest models possible will be developed. This theory will be used to develop algebraic equations that describe particular circuits used in high frequency design so that the reader develops a ""gut level"" understanding of the process and circuit. SPICE and Genesys simulations will be performed to show the accuracy of the algebraic models. By looking at differences between the algebraic equations and the simulations, new algebraic models will be developed that include parameters originally left out of the model

  14. Building valve amplifiers

    CERN Document Server

    Jones, Morgan

    2013-01-01

    Building Valve Amplifiers is a unique hands-on guide for anyone working with tube audio equipment--as an electronics hobbyist, audiophile or audio engineer. This 2nd Edition builds on the success of the first with technology and technique revisions throughout and, significantly, a major new self-build project, worked through step-by-step, which puts into practice the principles and techniques introduced throughout the book. Particular attention has been paid to answering questions commonly asked by newcomers to the world of the valve, whether audio enthusiasts tackling their first build or

  15. Superconducting digital logic amplifier

    International Nuclear Information System (INIS)

    Przybysz, J.X.

    1989-01-01

    This paper describes a superconducting digital logic amplifier for interfacing between a Josephson junction logic circuit having output current and a higher voltage semiconductor circuit input. The amplifier comprising: an input terminal for connection to a; an output terminal for connection to a semiconductor circuit input; an input, lower critical current, Josephson junction having first and second terminals; a first series string of at least three lower critical current Josephson junctions. The first series string being connected to the first terminal of the input Josephson junction such that the first series string is in series with the input Josephson junction to provide a series combination. The input terminal being connected to the first terminal of the input Josephson junction, and with the critical current of the lower critical current Josephson junctions of the input Josephson junction and the first series Josephson junctions being less than the output current of the low voltage Josephson junction circuit; a second series string of at least four higher critical current Josephson junctions. The second string being connected in parallel with the series combination to provide parallel strings having an upper common connection and a lower common connection. The lower common connection being connected to the second terminal of the input Josephson junction and the upper common connection being connected to the output terminal; and a pulsed DC current source connected the parallel strings at the upper common connection. The DC current source having a current at least equal to the critical current of the higher critical current Josephson junctions

  16. Cascade energy amplifier

    International Nuclear Information System (INIS)

    Barzilov, A.P.; Gulevich, A.V.; Kukharchuk, O.F.

    2000-01-01

    The technical problem of long-life fission product and minor actinide incineration and production of plutonium fuel in the prospective nuclear systems will arise at significant scales of nuclear power industry development. Subcritical nuclear reactors driven by extemal neutron sources (energy amplifiers) are considered as incinerators of toxicity of complete nuclear industry. In the frames of this concept, the subcritical reactor part consisting of two coupled blanket regions (inner fast neutron spectrum core and outer thermal core) driven by extemal neutron source is discussed. Two types of source are studied: spallation target and 14-MeV fusion bum of micropellets. Liquid metal Pb-Bi is considered as target material and coolant of inner fast core. Thermal core is a heavy-water subcritical reactor of the Candu-type. The fast core is protected from thermal neutrons influence with the boron shield. All reactor technologies used in this concept are tested during years of operation and commercially available. Thus, the cascade energy amplifiers have a set of advantages in comparison with traditional concepts: in energy production, in transmutation efficiency, and in economics. (authors)

  17. Amphoteric arsenic in GaN

    CERN Document Server

    Wahl, U; Araújo, J P; Rita, E; Soares, JC

    2007-01-01

    We have determined the lattice location of implanted arsenic in GaN by means of conversion electron emission channeling from radioactive $^{73}$As. We give direct evidence that As is an amphoteric impurity, thus settling the long-standing question as to whether it prefers cation or anion sites in GaN. The amphoteric character of As and the fact that As$\\scriptstyle_{Ga}\\,$ " anti-sites ” are not minority defects provide additional aspects to be taken into account for an explanantion of the so-called “ miscibility gap ” in ternary GaAs$\\scriptstyle_{1-x}$N$\\scriptstyle_{x}$ compounds, which cannot be grown with a single phase for values of $x$ in the range 0.1<${x}$< 0.99.

  18. Excitonic transitions in homoepitaxial GaN

    Energy Technology Data Exchange (ETDEWEB)

    Martinez-Criado, G.; Cros, A.; Cantarero, A. [Materials Science Inst. and Dept. of Applied Physics, Univ. of Valencia (Spain); Miskys, C.R.; Ambacher, O.; Stutzmann, M. [Technische Univ. Muenchen, Garching (Germany). Walter-Schottky-Inst. fuer Physikalische Grundlagen der Halbleiterelektronik

    2001-11-08

    The photoluminescence spectrum of a high quality homoepitaxial GaN film has been measured as a function of temperature. As temperature increases the recombination of free excitons dominates the spectra. Their energy shift has successfully fitted in that temperature range by means of the Bose-Einstein expression instead of Varshni's relationship. Values for the parameters of both semi-empirical relations describing the energy shift are reported and compared with the literature. (orig.)

  19. Nanoscale electromechanical parametric amplifier

    Science.gov (United States)

    Aleman, Benjamin Jose; Zettl, Alexander

    2016-09-20

    This disclosure provides systems, methods, and apparatus related to a parametric amplifier. In one aspect, a device includes an electron source electrode, a counter electrode, and a pumping electrode. The electron source electrode may include a conductive base and a flexible conductor. The flexible conductor may have a first end and a second end, with the second end of the flexible conductor being coupled to the conductive base. A cross-sectional dimension of the flexible conductor may be less than about 100 nanometers. The counter electrode may be disposed proximate the first end of the flexible conductor and spaced a first distance from the first end of the flexible conductor. The pumping electrode may be disposed proximate a length of the flexible conductor and spaced a second distance from the flexible conductor.

  20. Linear pulse amplifier

    International Nuclear Information System (INIS)

    Tjutju, R.L.

    1977-01-01

    Pulse amplifier is standard significant part of spectrometer. Apart from other type of amplification, it's a combination of amplification and pulse shaping. Because of its special purpose the device should fulfill the following : High resolution is desired to gain a high yield comparable to its actual state of condition. High signal to noise is desired to nhν resolution. High linearity to facilitate calibration. A good overload recovery, in order to the device will capable of analizing a low energy radiation which appear joinly on the high energy fields. Other expections of the device are its economical and practical use its extentive application. For that reason it's built on a standard NIM principle. Taking also into account the above mentioned considerations. High quality component parts are used throughout, while its availability in the domestic market is secured. (author)

  1. Modeling of semiconductor optical amplifiers

    DEFF Research Database (Denmark)

    Mørk, Jesper; Bischoff, Svend; Berg, Tommy Winther

    We discuss the modelling of semiconductor optical amplifiers with emphasis on their high-speed properties. Applications in linear amplification as well as ultrafast optical signal processing are reviewed. Finally, the possible role of quantum-dot based optical amplifiers is discussed.......We discuss the modelling of semiconductor optical amplifiers with emphasis on their high-speed properties. Applications in linear amplification as well as ultrafast optical signal processing are reviewed. Finally, the possible role of quantum-dot based optical amplifiers is discussed....

  2. P-type doping of GaN

    International Nuclear Information System (INIS)

    Wong, R.K.

    2000-01-01

    After implantation of As, As + Be, and As + Ga into GaN and annealing for short durations at temperatures as high as 1500 C, the GaN films remained highly resistive. It was apparent from c-RBS studies that although implantation damage did not create an amorphous layer in the GaN film, annealing at 1500 C did not provide enough energy to completely recover the radiation damage. Disorder recovered significantly after annealing at temperatures up to 1500 C, but not completely. From SIMS analysis, oxygen contamination in the AIN capping layer causes oxygen diffusion into the GaN film above 1400 C. The sapphire substrate (A1203) also decomposed and oxygen penetrated into the backside of the GaN layer above 1400 C. To prevent donor-like oxygen impurities from the capping layer and the substrate from contaminating the GaN film and compensating acceptors, post-implantation annealing should be done at temperatures below 1500 C. Oxygen in the cap could be reduced by growing the AIN cap on the GaN layer after the GaN growth run or by depositing the AIN layer in a ultra high vacuum (UHV) system post-growth to minimize residual oxygen and water contamination. With longer annealing times at 1400 C or at higher temperatures with a higher quality AIN, the implantation drainage may fully recover

  3. P-type doping of GaN

    Energy Technology Data Exchange (ETDEWEB)

    Wong, Raechelle Kimberly [Univ. of California, Berkeley, CA (United States)

    2000-04-01

    After implantation of As, As + Be, and As + Ga into GaN and annealing for short durations at temperatures as high as 1500 C, the GaN films remained highly resistive. It was apparent from c-RBS studies that although implantation damage did not create an amorphous layer in the GaN film, annealing at 1500 C did not provide enough energy to completely recover the radiation damage. Disorder recovered significantly after annealing at temperatures up to 1500 C, but not completely. From SIMS analysis, oxygen contamination in the AIN capping layer causes oxygen diffusion into the GaN film above 1400 C. The sapphire substrate (A1203) also decomposed and oxygen penetrated into the backside of the GaN layer above 1400 C. To prevent donor-like oxygen impurities from the capping layer and the substrate from contaminating the GaN film and compensating acceptors, post-implantation annealing should be done at temperatures below 1500 C. Oxygen in the cap could be reduced by growing the AIN cap on the GaN layer after the GaN growth run or by depositing the AIN layer in a ultra high vacuum (UHV) system post-growth to minimize residual oxygen and water contamination. With longer annealing times at 1400 C or at higher temperatures with a higher quality AIN, the implantation drainage may fully recover.

  4. Stage of GAN (Grupo de Analise do Nucleo) calculus methodology

    International Nuclear Information System (INIS)

    Silva, C.F. da.

    1987-11-01

    This Technical Note presents the stage of GAN Calculus Methodology in areas of Neutronics, Fuel Rod Performance and Fission Products Inventory. Proposals of GAN's members are presented and analyzed for each of these areas and a work schedule is established. (author)

  5. Polarization Raman spectroscopy of GaN nanorod bundles

    International Nuclear Information System (INIS)

    Tite, T.; Lee, C. J.; Chang, Y.-M.

    2010-01-01

    We performed polarization Raman spectroscopy on single wurtzite GaN nanorod bundles grown by plasma-assisted molecular beam epitaxy. The obtained Raman spectra were compared with those of GaN epilayer. The spectral difference between the GaN nanorod bundles and epilayer reveals the relaxation of Raman selection rules in these GaN nanorod bundles. The deviation of polarization-dependent Raman spectroscopy from the prediction of Raman selection rules is attributed to both the orientation of the crystal axis with respect to the polarization vectors of incident and scattered light and the structural defects in the merging boundary of GaN nanorods. The presence of high defect density induced by local strain at the merging boundary was further confirmed by transmission electron microscopy. The averaged defect interspacing was estimated to be around 3 nm based on the spatial correlation model.

  6. Polarization of eigenmodes in laser diode waveguides on semipolar and nonpolar GaN

    Energy Technology Data Exchange (ETDEWEB)

    Rass, Jens; Vogt, Patrick [Institute of Solid State Physics, Technische Universitaet Berlin (Germany); Wernicke, Tim; Einfeldt, Sven; Weyers, Markus [Ferdinand-Braun-Institut fuer Hoechstfrequenztechnik, Berlin (Germany); Scheibenzuber, Wolfgang G.; Schwarz, Ulrich T. [Department of Physics, Regensburg University (Germany); Kupec, Jan [Integrated Systems Laboratory, ETH Zurich (Switzerland); Witzigmann, Bernd [Computational Electronics and Photonics Group, University of Kassel (Germany); Kneissl, Michael [Institute of Solid State Physics, Technische Universitaet Berlin (Germany); Ferdinand-Braun-Institut fuer Hoechstfrequenztechnik, Berlin (Germany)

    2010-02-15

    Recent calculations of the eigenmodes in waveguides grown on semipolar GaN suggest that the optical polarization of the emitted light as well as the optical gain depends on the orientation of the resonator. Our measurements on separate confinement heterostructures on semipolar (11 anti 22) and (10 anti 12) GaN show that for laser resonators along the semipolar [11 anti 2 anti 3 ] and [0 anti 111] directions (i.e. the projection of the c-axis onto the plane of growth) the threshold for amplified spontaneous emission is lower than for the nonpolar direction and that the stimulated emission is linearly polarized as TE mode. For the waveguide structures along the nonpolar [1 anti 100] or [11 anti 20] direction on the other hand, birefringence and anisotropy of the optical gain in the plane of growth leads not only to a higher threshold but also to a rotation of the optical polarization which is not any more TE- or TM-polarized but influenced by the ordinary and extraordinary refractive index of the material. We observe stimulated emission into a mode which is linearly polarized in extraordinarydirection nearly parallel to the c-axis. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  7. Impact of GaN transition layers in the growth of GaN epitaxial layer on silicon

    International Nuclear Information System (INIS)

    Zhao Danmei; Zhao Degang; Jiang Desheng; Liu Zongshun; Zhu Jianjun; Chen Ping; Liu Wei; Li Xiang; Shi Ming

    2015-01-01

    A method for growing GaN epitaxial layer on Si (111) substrate is investigated. Due to the large lattice mismatch between GaN and AlN, GaN grown directly above an AlN buffer layer on the Si substrate turns out to be of poor quality. In this study, a GaN transition layer is grown additionally on the AlN buffer before the GaN epitaxial growth. By changing the growth conditions of the GaN transition layer, we can control the growth and merging of islands and control the transfer time from 3D to 2D growth mode. With this method, the crystalline quality of the GaN epitaxial layer can be improved and the crack density is reduced. Here, we have investigated the impact of a transition layer on the crystalline quality and stress evolution of a GaN epitaxial layer with methods of X-ray diffraction, optical microscopy and in situ reflectivity trace. With the increasing thickness of transition layer, the crack decreases and the crystalline quality is improved. But when the transition layer exceeds a critical thickness, the crystalline quality of the epilayer becomes lower and the crack density increases. (paper)

  8. Atomic force microscopy studies of homoepitaxial GaN layers grown on GaN template by laser MBE

    Energy Technology Data Exchange (ETDEWEB)

    Choudhary, B. S. [CSIR-National Physical Laboratory, Dr K.S. Krishnan Road, New Delhi 110012 (India); Rajasthan Technical University, Rawatbhata Road, Kota 324010 (India); Singh, A.; Tyagi, P. K. [Department of Applied Physics, Delhi Technological University, Delhi 110042 (India); Tanwar, S. [Rajasthan Technical University, Rawatbhata Road, Kota 324010 (India); Kumar, M. Senthil; Kushvaha, S. S., E-mail: kushvahas@nplindia.org [CSIR-National Physical Laboratory, Dr K.S. Krishnan Road, New Delhi 110012 (India)

    2016-04-13

    We have grown homoepitaxial GaN films on metal organic chemical vapor deposition (MOCVD) grown 3.5 µm thick GaN on sapphire (0001) substrate (GaN template) using an ultra-high vacuum (UHV) laser assisted molecular beam epitaxy (LMBE) system. The GaN films were grown by laser ablating a polycrystalline solid GaN target in the presence of active r.f. nitrogen plasma. The influence of laser repetition rates (10-30 Hz) on the surface morphology of homoepitaxial GaN layers have been studied using atomic force microscopy. It was found that GaN layer grown at 10 Hz shows a smooth surface with uniform grain size compared to the rough surface with irregular shape grains obtained at 30 Hz. The variation of surface roughness of the homoepitaxial GaN layer with and without wet chemical etching has been also studied and it was observed that the roughness of the film decreased after wet etching due to the curved structure/rough surface.

  9. CERN: Energy amplifier

    International Nuclear Information System (INIS)

    Anon.

    1995-01-01

    Even under the heavy burden of responsibility as CERN's Director General from 1989-3 the fertile mind of Carlo Rubbia the scientist was never still. A long-time Rubbia 'hobby' has been the search for new sources of nuclear energy, exploiting knowledge and skills from high energy physics. An initial objective was to adopt heavy ion techniques to induce controlled thermonuclear fusion, but in 1994 this quest changed direction. Putting the problems of thermonuclear fusion aside, Rubbia began to explore an alternative route to energy production through controlled nuclear fission. The idea is to use a particle accelerator producing neutrons by spallation (interaction of particles with a target) to feed a fuel/moderator assembly where the neutrons multiply by fission chain reactions. If the energy liberated becomes substantially greater than that needed to drive the accelerator, the process has a net gain and becomes selfsupporting. Hence the name ''Energy Amplifier'' (EA). Similar systems for energy production or for nuclear waste incineration have been proposed at Los Alamos and in Japan and Russia, but appear to require the prior development of innovative linear accelerators. For Rubbia's Amplifier, the requisite accelerator is a reasonable extrapolation of an existing cyclotron such that at the Swiss Paul Scherrer Institute. Moreover, the EA would require fuel rods very similar to those of conventional reactors, rather than demand-ing new technology using liquid fuel loops (molten salts) with on-line separation of radioactive products. Unlike a reactor, the EA's fission reaction is not self-sustaining: it is sub-critical and needs a continuous supply of neutrons from the accelerator. This makes Chernobyl-type meltdowns unlikely: if the accelerator stops, the reaction stops too. Another major advantage is that the old dream of using thorium as a fuel is now made possible. Thorium is not itself fissile, but under neutron

  10. Preparation of freestanding GaN wafer by hydride vapor phase epitaxy on porous silicon

    Science.gov (United States)

    Wu, Xian; Li, Peng; Liang, Renrong; Xiao, Lei; Xu, Jun; Wang, Jing

    2018-05-01

    A freestanding GaN wafer was prepared on porous Si (111) substrate using hydride vapor phase epitaxy (HVPE). To avoid undesirable effects of the porous surface on the crystallinity of the GaN, a GaN seed layer was first grown on the Si (111) bare wafer. A pattern with many apertures was fabricated in the GaN seed layer using lithography and etching processes. A porous layer was formed in the Si substrate immediately adjacent to the GaN seed layer by an anodic etching process. A 500-μm-thick GaN film was then grown on the patterned GaN seed layer using HVPE. The GaN film was separated from the Si substrate through the formation of cracks in the porous layer caused by thermal mismatch stress during the cooling stage of the HVPE. Finally, the GaN film was polished to obtain a freestanding GaN wafer.

  11. Millimeter-wave power amplifiers

    CERN Document Server

    du Preez, Jaco

    2017-01-01

    This book provides a detailed review of millimeter-wave power amplifiers, discussing design issues and performance limitations commonly encountered in light of the latest research. Power amplifiers, which are able to provide high levels of output power and linearity while being easily integrated with surrounding circuitry, are a crucial component in wireless microwave systems. The book is divided into three parts, the first of which introduces readers to mm-wave wireless systems and power amplifiers. In turn, the second focuses on design principles and EDA concepts, while the third discusses future trends in power amplifier research. The book provides essential information on mm-wave power amplifier theory, as well as the implementation options and technologies involved in their effective design, equipping researchers, circuit designers and practicing engineers to design, model, analyze, test and implement high-performance, spectrally clean and energy-efficient mm-wave systems.

  12. Energetics of Mg incorporation at GaN(0001) and GaN(0001¯) surfaces

    Science.gov (United States)

    Sun, Qiang; Selloni, Annabella; Myers, T. H.; Doolittle, W. Alan

    2006-04-01

    By using density functional calculations in the generalized gradient approximation, we investigate the energetics of Mg adsorption and incorporation at GaN(0001) and GaN(0001¯) surfaces under various Ga and Mg coverage conditions as well as in presence of light or electron beam-induced electronic excitation. We find significant differences in Mg incorporation between Ga- and N-polar surfaces. Mg incorporation is easier at the Ga-polar surface, but high Mg coverages are found to cause important distortions which locally change the polarity from Ga to N polar. At the N-rich and moderately Ga-rich GaN(0001) surface, 0.25 ML of Mg substituting Ga in the top bilayer strongly reduce the surface diffusion barriers of Ga and N adatoms, in agreement with the surfactant effect observed in experiments. As the Mg coverage exceeds 0.5 ML, partial incorporation in the subsurface region (second bilayer) becomes favorable. A surface structure with 0.5 ML of incorporated Mg in the top bilayer and 0.25 ML in the second bilayer is found to be stable over a wide range of Ga chemical potential. At the Ga bilayer-terminated GaN(0001) surface, corresponding to Ga-rich conditions, configurations where Mg is incorporated in the interface region between the metallic Ga bilayer and the underlying GaN bilayer appear to be favored. At the N-polar surface, Mg is not incorporated under N-rich or moderately Ga-rich conditions, whereas incorporation in the adlayer may take place under Ga-rich conditions. In the presence of light or electron beam induced excitation, energy differences between Mg incorporated at the surface and in deeper layers are reduced so that the tendency toward surface segregation is also reduced.

  13. Investigation of GaN LED with Be-implanted Mg-doped GaN layer

    International Nuclear Information System (INIS)

    Huang, H.-W.; Kao, C.C.; Chu, J.T.; Kuo, H.C.; Wang, S.C.; Yu, C.C.; Lin, C.F.

    2004-01-01

    We report the electrical and optical characteristics of GaN light emitting diode (LED) with beryllium (Be) implanted Mg-doped GaN layer. The p-type layer of Be-implanted GaN LED showed a higher hole carrier concentration of 2.3 x 10 18 cm -3 and low specific contact resistance value of 2.0 x 10 -4 Ωcm 2 than as-grown p-GaN LED samples without Be-implantation. The Be-implanted GaN LEDs with InGaN/GaN MQW show slightly lower light output (about 10%) than the as-grown GaN LEDs, caused by the high RTA temperature annealing process

  14. Investigation of different mechanisms of GaN growth induced on AlN and GaN nucleation layers

    International Nuclear Information System (INIS)

    Tasco, V.; Campa, A.; Tarantini, I.; Passaseo, A.; Gonzalez-Posada, F.; Munoz, E.; Redondo-Cubero, A.; Lorenz, K.; Franco, N.

    2009-01-01

    The evolution of GaN growth on AlN and GaN nucleation layers is compared through morphological and structural analyses, including ion beam analysis. By using AlN nucleation layer grown at high temperature, improved crystalline quality is exhibited by 300 nm thin GaN epilayers. GaN (002) x-ray rocking curve as narrow as 168 arc sec and atomic-step surface morphology characterize such a thin GaN film on AlN. Defects are strongly confined into the first 50 nm of growth, whereas a fast laterally coherent growth is observed when increasing thickness, as an effect of high temperature AlN surface morphology and Ga adatom dynamics over this template

  15. Determination of carrier diffusion length in GaN

    Science.gov (United States)

    Hafiz, Shopan; Zhang, Fan; Monavarian, Morteza; Avrutin, Vitaliy; Morkoç, Hadis; Özgür, Ümit; Metzner, Sebastian; Bertram, Frank; Christen, Jürgen; Gil, Bernard

    2015-01-01

    Diffusion lengths of photo-excited carriers along the c-direction were determined from photoluminescence (PL) and cross-sectional cathodoluminescence (CL) measurements in p- and n-type GaN epitaxial layers grown on c-plane sapphire by metal-organic chemical vapor deposition. The investigated samples incorporate a 6 nm thick In0.15Ga0.85N active layer capped with either 500 nm p-GaN or 1500 nm n-GaN. The top GaN layers were etched in steps and PL from the InGaN active region and the underlying layers was monitored as a function of the top GaN thickness upon photo-generation near the surface region by above bandgap excitation. Taking into consideration the absorption in the top GaN layer as well as active and underlying layers, the diffusion lengths at 295 K and at 15 K were measured to be 93 ± 7 nm and 70 ± 7 nm for Mg-doped p-type GaN and 432 ± 30 nm and 316 ± 30 nm for unintentionally doped n-type GaN, respectively, at photogenerated carrier densities of 4.2 × 1018 cm-3 using PL spectroscopy. CL measurements of the unintentionally doped n-type GaN layer at much lower carrier densities of 1017 cm-3 revealed a longer diffusion length of 525 ± 11 nm at 6 K.

  16. Interaction of GaN epitaxial layers with atomic hydrogen

    Energy Technology Data Exchange (ETDEWEB)

    Losurdo, M.; Giangregorio, M.M.; Capezzuto, P.; Bruno, G.; Namkoong, G.; Doolittle, W.A.; Brown, A.S

    2004-08-15

    GaN surface passivation processes are still under development and among others hydrogen treatments are investigated. In this study, we use non-destructive optical and electrical probes such as spectroscopic ellipsometry (SE) and surface potential Kelvin probe microscopy (SP-KPM) in conjunction with non-contact atomic force microscopy (AFM) for the study of the different reactivity of Ga-polar and N-polar GaN epitaxial layers with atomic hydrogen. The GaN epitaxial layers are grown by molecular beam epitaxy on sapphire (0 0 0 1) substrates, and GaN and AlN buffer layers are used to grow N-polar and Ga-polar films, respectively. The atomic hydrogen is produced by a remote rf (13.56 MHz) H{sub 2} plasma in order to rule out any ion bombardment of the GaN surface and make the interaction chemical. It is found that the interaction of GaN surfaces with atomic hydrogen depends on polarity, with N-polar GaN exhibiting greater reactivity. Furthermore, it is found that atomic hydrogen is effective in the passivation of grain boundaries and surface defects states.

  17. Interaction of GaN epitaxial layers with atomic hydrogen

    International Nuclear Information System (INIS)

    Losurdo, M.; Giangregorio, M.M.; Capezzuto, P.; Bruno, G.; Namkoong, G.; Doolittle, W.A.; Brown, A.S.

    2004-01-01

    GaN surface passivation processes are still under development and among others hydrogen treatments are investigated. In this study, we use non-destructive optical and electrical probes such as spectroscopic ellipsometry (SE) and surface potential Kelvin probe microscopy (SP-KPM) in conjunction with non-contact atomic force microscopy (AFM) for the study of the different reactivity of Ga-polar and N-polar GaN epitaxial layers with atomic hydrogen. The GaN epitaxial layers are grown by molecular beam epitaxy on sapphire (0 0 0 1) substrates, and GaN and AlN buffer layers are used to grow N-polar and Ga-polar films, respectively. The atomic hydrogen is produced by a remote rf (13.56 MHz) H 2 plasma in order to rule out any ion bombardment of the GaN surface and make the interaction chemical. It is found that the interaction of GaN surfaces with atomic hydrogen depends on polarity, with N-polar GaN exhibiting greater reactivity. Furthermore, it is found that atomic hydrogen is effective in the passivation of grain boundaries and surface defects states

  18. In situ synthesis and characterization of GaN nanorods through thermal decomposition of pre-grown GaN films

    International Nuclear Information System (INIS)

    Yan, P; Qin, D; An, Y K; Li, G Z; Xing, J; Liu, J J

    2008-01-01

    Herein we describe a thermal treatment route to synthesize gallium nitride (GaN) nanorods. In this method, GaN nanorods were synthesized by thermal treatment of GaN films at a temperature of 800 deg. C. The morphology and structure of GaN nanorods were characterized by scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The results show that GaN nanorods have a hexagonal wurtzite structure with diameters ranging from 30 to 50 nm. Additionally, GaN nanoplates are also founded in the products. The growth process of GaN nanostructures was investigated and a thermal decomposition mechanism was proposed. Our method provides a cost-effective route to fabricate GaN nanorods, which will benefit the fabrication of one-dimensional nanomaterials and device applications

  19. Improved InGaN/GaN quantum wells on treated GaN template with a Ga-rich GaN interlayer

    International Nuclear Information System (INIS)

    Fang, Zhilai; Shen, Xiyang; Wu, Zhengyuan; Zhang, Tong-Yi

    2015-01-01

    Treated GaN template was achieved by in situ droplet epitaxy of a Ga-rich GaN interlayer on the conventional GaN template. InGaN/GaN quantum wells (QWs) were grown on the conventional and treated GaN templates under the same growth conditions and then comprehensively characterized. The indium homogeneity in the InGaN layers and the interface sharpness between InGaN and GaN layers of the InGaN/GaN QWs on the treated GaN template were significantly improved. The emission intensity from the InGaN/GaN QWs on the treated GaN template was enhanced by 20% than that on the conventional GaN template, which was attributed to the strain reduction and the improvement in crystalline quality. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  20. Small signal microwave amplifier design

    CERN Document Server

    Grosch, Theodore

    2000-01-01

    This book explains techniques and examples for designing stable amplifiers for high-frequency applications in which the signal is small and the amplifier circuit is linear. An in-depth discussion of linear network theory provides the foundation needed to develop actual designs. Examples throughout the book will show you how to apply the knowledge gained in each chapter leading to the complex design of low noise amplifiers. Many exercises at the end of each chapter will help students to practice their skills. The solutions to these design problems are available in an accompanying solutions book

  1. Final amplifier design and mercury

    International Nuclear Information System (INIS)

    Rose, E.A.; Hanson, D.E.

    1991-01-01

    The final amplifier for the Mercury KrF excimer facility is being designed. The design exercise involves extensive modeling to predict amplifier performance. Models of the pulsed-power system, including a Child-Langmuir diode with closure, electron-beam energy deposition, KrF laser kinetics, amplified spontaneous emission (ASE), a time-dependent laser extraction in the presence of ASE are presented as a design package. The design exercise indicates that the energy objective of Phase I -- 100 joules -- will be met

  2. UMA/GAN network architecture analysis

    Science.gov (United States)

    Yang, Liang; Li, Wensheng; Deng, Chunjian; Lv, Yi

    2009-07-01

    This paper is to critically analyze the architecture of UMA which is one of Fix Mobile Convergence (FMC) solutions, and also included by the third generation partnership project(3GPP). In UMA/GAN network architecture, UMA Network Controller (UNC) is the key equipment which connects with cellular core network and mobile station (MS). UMA network could be easily integrated into the existing cellular networks without influencing mobile core network, and could provides high-quality mobile services with preferentially priced indoor voice and data usage. This helps to improve subscriber's experience. On the other hand, UMA/GAN architecture helps to integrate other radio technique into cellular network which includes WiFi, Bluetooth, and WiMax and so on. This offers the traditional mobile operators an opportunity to integrate WiMax technique into cellular network. In the end of this article, we also give an analysis of potential influence on the cellular core networks ,which is pulled by UMA network.

  3. GaN transistors for efficient power conversion

    CERN Document Server

    Lidow, Alex; de Rooij, Michael; Reusch, David

    2014-01-01

    The first edition of GaN Transistors for Efficient Power Conversion was self-published by EPC in 2012, and is currently the only other book to discuss GaN transistor technology and specific applications for the technology. More than 1,200 copies of the first edition have been sold through Amazon or distributed to selected university professors, students and potential customers, and a simplified Chinese translation is also available. The second edition has expanded emphasis on applications for GaN transistors and design considerations. This textbook provides technical and application-focused i

  4. Photocurrent characteristics of metal–AlGaN/GaN Schottky-on-heterojunction diodes induced by GaN interband excitation

    Science.gov (United States)

    Tang, Xi; Li, Baikui; Chen, Kevin J.; Wang, Jiannong

    2018-05-01

    The photocurrent characteristics of metal–AlGaN/GaN Schottky-on-heterojunction diodes were investigated. When the photon energy of incident light was larger than the bandgap of GaN but smaller than that of AlGaN, the alternating-current (ac) photocurrent measured using lock-in techniques increased with the chopper frequency. Analyzing the generation and flow processes of photocarriers revealed that the photocurrent induced by GaN interband excitation featured a transient behavior, and its direction reversed when the light excitation was removed. The abnormal dependence of the measured ac photocurrent magnitude on the chopper frequency was explained considering the detection principles of a lock-in amplifier.

  5. New Packaging for Amplifier Slabs

    Energy Technology Data Exchange (ETDEWEB)

    Riley, M. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Thorsness, C. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Suratwala, T. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Steele, R. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Rogowski, G. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)

    2015-03-18

    The following memo provides a discussion and detailed procedure for a new finished amplifier slab shipping and storage container. The new package is designed to maintain an environment of <5% RH to minimize weathering.

  6. Operational amplifiers theory and design

    CERN Document Server

    Huijsing, Johan

    2017-01-01

    This proven textbook guides readers to a thorough understanding of the theory and design of operational amplifiers (OpAmps). The core of the book presents systematically the design of operational amplifiers, classifying them into a periodic system of nine main overall configurations, ranging from one gain stage up to four or more stages. This division enables circuit designers to recognize quickly, understand, and choose optimal configurations. Characterization of operational amplifiers is given by macro models and error matrices, together with measurement techniques for their parameters. Definitions are given for four types of operational amplifiers depending on the grounding of their input and output ports. Many famous designs are evaluated in depth, using a carefully structured approach enhanced by numerous figures. In order to reinforce the concepts introduced and facilitate self-evaluation of design skills, the author includes problems with detailed solutions, as well as simulation exercises. Provides te...

  7. TARC: Carlo Rubbia's Energy Amplifier

    CERN Multimedia

    Laurent Guiraud

    1997-01-01

    Transmutation by Adiabatic Resonance Crossing (TARC) is Carlo Rubbia's energy amplifier. This CERN experiment demonstrated that long-lived fission fragments, such as 99-TC, can be efficiently destroyed.

  8. Enhanced performance CCD output amplifier

    Science.gov (United States)

    Dunham, Mark E.; Morley, David W.

    1996-01-01

    A low-noise FET amplifier is connected to amplify output charge from a che coupled device (CCD). The FET has its gate connected to the CCD in common source configuration for receiving the output charge signal from the CCD and output an intermediate signal at a drain of the FET. An intermediate amplifier is connected to the drain of the FET for receiving the intermediate signal and outputting a low-noise signal functionally related to the output charge signal from the CCD. The amplifier is preferably connected as a virtual ground to the FET drain. The inherent shunt capacitance of the FET is selected to be at least equal to the sum of the remaining capacitances.

  9. Photoluminescence of Mg-doped m-plane GaN grown by MOCVD on bulk GaN substrates

    OpenAIRE

    Monemar, Bo; Paskov, Plamen; Pozina, Galia; Hemmingsson, Carl; Bergman, Peder; Lindgren, David; Samuelson, Lars; Ni, Xianfeng; Morkoç, Hadis; Paskova, Tanya; Bi, Zhaoxia; Ohlsson, Jonas

    2011-01-01

    Photoluminescence (PL) properties are reported for a set of m-plane GaN films with Mg doping varied from mid 1018cm-3 to well above 1019 cm-3. The samples were grown with MOCVD at reduced pressure on low defect density m-plane bulk GaN templates. The sharp line near bandgap bound exciton (BE) spectra observed below 50 K, as well as the broader donor-acceptor pair (DAP) PL bands at 2.9 eV to 3.3 eV give evidence of several Mg related acceptors, similar to the case of c-plane GaN. The dependenc...

  10. Application of Generative Adversarial Networks (GANs) to jet images

    CERN Multimedia

    CERN. Geneva

    2017-01-01

    https://arxiv.org/abs/1701.05927 We provide a bridge between generative modeling in the Machine Learning community and simulated physical processes in High Energy Particle Physics by applying a novel Generative Adversarial Network (GAN) architecture to the production of jet images -- 2D representations of energy depositions from particles interacting with a calorimeter. We propose a simple architecture, the Location-Aware Generative Adversarial Network, that learns to produce realistic radiation patterns from simulated high energy particle collisions. The pixel intensities of GAN-generated images faithfully span over many orders of magnitude and exhibit the desired low-dimensional physical properties (i.e., jet mass, n-subjettiness, etc.). We shed light on limitations, and provide a novel empirical validation of image quality and validity of GAN-produced simulations of the natural world. This work provides a base for further explorations of GANs for use in faster simulation in High Energy Particle Physics.

  11. Mn doped GaN thin films and nanoparticles

    Czech Academy of Sciences Publication Activity Database

    Šofer, Z.; Sedmidubský, D.; Huber, Š.; Hejtmánek, Jiří; Macková, Anna; Fiala, R.

    2012-01-01

    Roč. 9, 8-9 (2012), s. 809-824 ISSN 1475-7435 R&D Projects: GA ČR GA104/09/0621 Institutional research plan: CEZ:AV0Z10100521; CEZ:AV0Z10480505 Keywords : GaN nanoparticles * GaN thin films * manganese * transition metals * MOVPE * ion implantations Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.087, year: 2012

  12. ARM MJO Investigation Experiment on Gan Island (AMIE-Gan) Science Plan

    Energy Technology Data Exchange (ETDEWEB)

    Long, CL; Del Genio, A; Deng, M; Fu, X; Gustafson, W; Houze, R; Jakob, C; Jensen, M; Johnson, R; Liu, X; Luke, E; May, P; McFarlane, S; Minnis, P; Schumacher, C; Vogelmann, A; Wang, Y; Webster, P; Xie, S; Zhang, C

    2011-04-11

    The overarching campaign, which includes the ARM Mobile Facility 2 (AMF2) deployment in conjunction with the Dynamics of the Madden-Julian Oscillation (DYNAMO) and the Cooperative Indian Ocean experiment on intraseasonal variability in the Year 2011 (CINDY2011) campaigns, is designed to test several current hypotheses regarding the mechanisms responsible for Madden-Julian Oscillation (MJO) initiation and propagation in the Indian Ocean area. The synergy between the proposed AMF2 deployment with DYNAMO/CINDY2011, and the corresponding funded experiment on Manus, combine for an overarching ARM MJO Investigation Experiment (AMIE) with two components: AMF2 on Gan Island in the Indian Ocean (AMIE-Gan), where the MJO initiates and starts its eastward propagation; and the ARM Manus site (AMIE-Manus), which is in the general area where the MJO usually starts to weaken in climate models. AMIE-Gan will provide measurements of particular interest to Atmospheric System Research (ASR) researchers relevant to improving the representation of MJO initiation in climate models. The framework of DYNAMO/CINDY2011 includes two proposed island-based sites and two ship-based locations forming a square pattern with sonde profiles and scanning precipitation and cloud radars at both island and ship sites. These data will be used to produce a Variational Analysis data set coinciding with the one produced for AMIE-Manus. The synergy between AMIE-Manus and AMIE-Gan will allow studies of the initiation, propagation, and evolution of the convective cloud population within the framework of the MJO. As with AMIE-Manus, AMIE-Gan/DYNAMO also includes a significant modeling component geared toward improving the representation of MJO initiation and propagation in climate and forecast models. This campaign involves the deployment of the second, marine-capable, AMF; all of the included measurement systems; and especially the scanning and vertically pointing radars. The campaign will include sonde

  13. Synthesis of p-type GaN nanowires.

    Science.gov (United States)

    Kim, Sung Wook; Park, Youn Ho; Kim, Ilsoo; Park, Tae-Eon; Kwon, Byoung Wook; Choi, Won Kook; Choi, Heon-Jin

    2013-09-21

    GaN has been utilized in optoelectronics for two decades. However, p-type doping still remains crucial for realization of high performance GaN optoelectronics. Though Mg has been used as a p-dopant, its efficiency is low due to the formation of Mg-H complexes and/or structural defects in the course of doping. As a potential alternative p-type dopant, Cu has been recognized as an acceptor impurity for GaN. Herein, we report the fabrication of Cu-doped GaN nanowires (Cu:GaN NWs) and their p-type characteristics. The NWs were grown vertically via a vapor-liquid-solid (VLS) mechanism using a Au/Ni catalyst. Electrical characterization using a nanowire-field effect transistor (NW-FET) showed that the NWs exhibited n-type characteristics. However, with further annealing, the NWs showed p-type characteristics. A homo-junction structure (consisting of annealed Cu:GaN NW/n-type GaN thin film) exhibited p-n junction characteristics. A hybrid organic light emitting diode (OLED) employing the annealed Cu:GaN NWs as a hole injection layer (HIL) also demonstrated current injected luminescence. These results suggest that Cu can be used as a p-type dopant for GaN NWs.

  14. Polarity Control of Heteroepitaxial GaN Nanowires on Diamond.

    Science.gov (United States)

    Hetzl, Martin; Kraut, Max; Hoffmann, Theresa; Stutzmann, Martin

    2017-06-14

    Group III-nitride materials such as GaN nanowires are characterized by a spontaneous polarization within the crystal. The sign of the resulting sheet charge at the top and bottom facet of a GaN nanowire is determined by the orientation of the wurtzite bilayer of the different atomic species, called N and Ga polarity. We investigate the polarity distribution of heteroepitaxial GaN nanowires on different substrates and demonstrate polarity control of GaN nanowires on diamond. Kelvin Probe Force Microscopy is used to determine the polarity of individual selective area-grown and self-assembled nanowires over a large scale. At standard growth conditions, mixed polarity occurs for selective GaN nanowires on various substrates, namely on silicon, on sapphire and on diamond. To obtain control over the growth orientation on diamond, the substrate surface is modified by nitrogen and oxygen plasma exposure prior to growth, and the growth parameters are adjusted simultaneously. We find that the surface chemistry and the substrate temperature are the decisive factors for obtaining control of up to 93% for both polarity types, whereas the growth mode, namely selective area or self-assembled growth, does not influence the polarity distribution significantly. The experimental results are discussed by a model based on the interfacial bonds between the GaN nanowires, the termination layer, and the substrate.

  15. Demonstration of an RF front-end based on GaN HEMT technology

    Science.gov (United States)

    Ture, Erdin; Musser, Markus; Hülsmann, Axel; Quay, Rüdiger; Ambacher, Oliver

    2017-05-01

    The effectiveness of the developed front-end on blocking the communication link of a commercial drone vehicle has been demonstrated in this work. A jamming approach has been taken in a broadband fashion by using GaN HEMT technology. Equipped with a modulated-signal generator, a broadband power amplifier, and an omni-directional antenna, the proposed system is capable of producing jamming signals in a very wide frequency range between 0.1 - 3 GHz. The maximum RF output power of the amplifier module has been software-limited to 27 dBm (500 mW), complying to the legal spectral regulations of the 2.4 GHz ISM band. In order to test the proof of concept, a real-world scenario has been prepared in which a commercially-available quadcopter UAV is flown in a controlled environment while the jammer system has been placed in a distance of about 10 m from the drone. It has been proven that the drone of interest can be neutralized as soon as it falls within the range of coverage (˜3 m) which endorses the promising potential of the broadband jamming approach.

  16. Spectroscopic amplifier for pin diode

    International Nuclear Information System (INIS)

    Alonso M, M. S.; Hernandez D, V. M.; Vega C, H. R.

    2014-10-01

    The photodiode remains the basic choice for the photo-detection and is widely used in optical communications, medical diagnostics and field of corpuscular radiation. In detecting radiation it has been used for monitoring radon and its progeny and inexpensive spectrometric systems. The development of a spectroscopic amplifier for Pin diode is presented which has the following characteristics: canceler Pole-Zero (P/Z) with a time constant of 8 μs; constant gain of 57, suitable for the acquisition system; 4th integrator Gaussian order to waveform change of exponential input to semi-Gaussian output and finally a stage of baseline restorer which prevents Dc signal contribution to the next stage. The operational amplifier used is the TLE2074 of BiFET technology of Texas Instruments with 10 MHz bandwidth, 25 V/μs of slew rate and a noise floor of 17 nv/(Hz)1/2. The integrated circuit has 4 operational amplifiers and in is contained the total of spectroscopic amplifier that is the goal of electronic design. The results show like the exponential input signal is converted to semi-Gaussian, modifying only the amplitude according to the specifications in the design. The total system is formed by the detector, which is the Pin diode, a sensitive preamplifier to the load, the spectroscopic amplifier that is what is presented and finally a pulse height analyzer (Mca) which is where the spectrum is shown. (Author)

  17. Role of the ganSPQAB Operon in Degradation of Galactan by Bacillus subtilis.

    Science.gov (United States)

    Watzlawick, Hildegard; Morabbi Heravi, Kambiz; Altenbuchner, Josef

    2016-10-15

    Bacillus subtilis possesses different enzymes for the utilization of plant cell wall polysaccharides. This includes a gene cluster containing galactan degradation genes (ganA and ganB), two transporter component genes (ganQ and ganP), and the sugar-binding lipoprotein-encoding gene ganS (previously known as cycB). These genes form an operon that is regulated by GanR. The degradation of galactan by B. subtilis begins with the activity of extracellular GanB. GanB is an endo-β-1,4-galactanase and is a member of glycoside hydrolase (GH) family 53. This enzyme was active on high-molecular-weight arabinose-free galactan and mainly produced galactotetraose as well as galactotriose and galactobiose. These galacto-oligosaccharides may enter the cell via the GanQP transmembrane proteins of the galactan ABC transporter. The specificity of the galactan ABC transporter depends on the sugar-binding lipoprotein, GanS. Purified GanS was shown to bind galactotetraose and galactotriose using thermal shift assay. The energy for this transport is provided by MsmX, an ATP-binding protein. The transported galacto-oligosaccharides are further degraded by GanA. GanA is a β-galactosidase that belongs to GH family 42. The GanA enzyme was able to hydrolyze short-chain β-1,4-galacto-oligosaccharides as well as synthetic β-galactopyranosides into galactose. Thermal shift assay as well as electrophoretic mobility shift assay demonstrated that galactobiose is the inducer of the galactan operon regulated by GanR. DNase I footprinting revealed that the GanR protein binds to an operator overlapping the -35 box of the σ(A)-type promoter of Pgan, which is located upstream of ganS IMPORTANCE: Bacillus subtilis is a Gram-positive soil bacterium that utilizes different types of carbohydrates, such as pectin, as carbon sources. So far, most of the pectin degradation systems and enzymes have been thoroughly studied in B. subtilis Nevertheless, the B. subtilis utilization system of galactan, which is

  18. GaN Bulk Growth and Epitaxy from Ca-Ga-N Solutions, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — This SBIR proposal addresses the liquid phase epitaxy (LPE) of gallium nitride (GaN) films using nitrogen-enriched metal solutions. Growth of GaN from solutions...

  19. Viability and proliferation of endothelial cells upon exposure to GaN nanoparticles.

    Science.gov (United States)

    Braniste, Tudor; Tiginyanu, Ion; Horvath, Tibor; Raevschi, Simion; Cebotari, Serghei; Lux, Marco; Haverich, Axel; Hilfiker, Andres

    2016-01-01

    Nanotechnology is a rapidly growing and promising field of interest in medicine; however, nanoparticle-cell interactions are not yet fully understood. The goal of this work was to examine the interaction between endothelial cells and gallium nitride (GaN) semiconductor nanoparticles. Cellular viability, adhesion, proliferation, and uptake of nanoparticles by endothelial cells were investigated. The effect of free GaN nanoparticles versus the effect of growing endothelial cells on GaN functionalized surfaces was examined. To functionalize surfaces with GaN, GaN nanoparticles were synthesized on a sacrificial layer of zinc oxide (ZnO) nanoparticles using hydride vapor phase epitaxy. The uptake of GaN nanoparticles by porcine endothelial cells was strongly dependent upon whether they were fixed to the substrate surface or free floating in the medium. The endothelial cells grown on surfaces functionalized with GaN nanoparticles demonstrated excellent adhesion and proliferation, suggesting good biocompatibility of the nanostructured GaN.

  20. High surface hole concentration p-type GaN using Mg implantation

    International Nuclear Information System (INIS)

    Long Tao; Yang Zhijian; Zhang Guoyi

    2001-01-01

    Mg ions were implanted on Mg-doped GaN grown by metalorganic chemical vapor deposition (MOCVD). The p-type GaN was achieved with high hole concentration (8.28 x 10 17 cm -3 ) conformed by Van derpauw Hall measurement after annealing at 800 degree C for 1 h. this is the first experimental report of Mg implantation on Mg-doped GaN and achieving p-type GaN with high surface hole concentration

  1. StackGAN++: Realistic Image Synthesis with Stacked Generative Adversarial Networks

    OpenAIRE

    Zhang, Han; Xu, Tao; Li, Hongsheng; Zhang, Shaoting; Wang, Xiaogang; Huang, Xiaolei; Metaxas, Dimitris

    2017-01-01

    Although Generative Adversarial Networks (GANs) have shown remarkable success in various tasks, they still face challenges in generating high quality images. In this paper, we propose Stacked Generative Adversarial Networks (StackGAN) aiming at generating high-resolution photo-realistic images. First, we propose a two-stage generative adversarial network architecture, StackGAN-v1, for text-to-image synthesis. The Stage-I GAN sketches the primitive shape and colors of the object based on given...

  2. Dielectric waveguide amplifiers and lasers

    NARCIS (Netherlands)

    Pollnau, Markus

    The performance of semiconductor amplifiers and lasers has made them the preferred choice for optical gain on a micro-chip. In the past few years, we have demonstrated that also rare-earth-ion-doped dielectric waveguides show remarkable performance, ranging from a small-signal gain per unit length

  3. Thermal Annealing induced relaxation of compressive strain in porous GaN structures

    KAUST Repository

    Ben Slimane, Ahmed; Najar, Adel; Ng, Tien Khee; Ooi, Boon S.

    2012-01-01

    The effect of annealing on strain relaxation in porous GaN fabricated using electroless chemical etching is presented. The Raman shift of 1 cm-1 in phonon frequency of annealed porous GaN with respect to as-grown GaN corresponds to a relaxation

  4. Epitaxial GaN around ZnO nanopillars

    Energy Technology Data Exchange (ETDEWEB)

    Fikry, Mohamed; Scholz, Ferdinand [Institut fuer Optoelektronik, Universitaet Ulm, Albert-Einstein-Allee 45, 89081 Ulm (Germany); Madel, Manfred; Tischer, Ingo; Thonke, Klaus [Institut fuer Quantenmaterie, Universitaet Ulm, Albert-Einstein-Allee 45, 89081 Ulm (Germany)

    2011-07-01

    We report on an investigation of the epitaxial quality of GaN layers overgrown coaxially around ZnO nanopillars. In a first step, regularly arranged ZnO nanopillars were grown using pre-patterning by e-beam lithography or self-organized hexagonal polystyrene sphere masks. Alternatively, ZnO pillars were also successfully grown on top of GaN pyramids. In a second step, GaN layers were grown around the ZnO pillars by Metal Organic Vapor Phase Epitaxy. At growth temperatures above 800 C, the ZnO pillars are dissolved by the hydrogen carrier gas leaving hollow GaN nanotubes. Characterization involved photoluminescence (PL), scanning electron microscopy and cathodoluminescence. The fair quality of the deposited GaN layers is confirmed by a sharp low temperature PL peak at 3.48 eV attributed to the donor bound exciton emission. Further peaks at 3.42 eV and 3.29 eV show the possible existence of basal plane and prismatic stacking faults.

  5. The 2018 GaN power electronics roadmap

    Science.gov (United States)

    Amano, H.; Baines, Y.; Beam, E.; Borga, Matteo; Bouchet, T.; Chalker, Paul R.; Charles, M.; Chen, Kevin J.; Chowdhury, Nadim; Chu, Rongming; De Santi, Carlo; Merlyne De Souza, Maria; Decoutere, Stefaan; Di Cioccio, L.; Eckardt, Bernd; Egawa, Takashi; Fay, P.; Freedsman, Joseph J.; Guido, L.; Häberlen, Oliver; Haynes, Geoff; Heckel, Thomas; Hemakumara, Dilini; Houston, Peter; Hu, Jie; Hua, Mengyuan; Huang, Qingyun; Huang, Alex; Jiang, Sheng; Kawai, H.; Kinzer, Dan; Kuball, Martin; Kumar, Ashwani; Boon Lee, Kean; Li, Xu; Marcon, Denis; März, Martin; McCarthy, R.; Meneghesso, Gaudenzio; Meneghini, Matteo; Morvan, E.; Nakajima, A.; Narayanan, E. M. S.; Oliver, Stephen; Palacios, Tomás; Piedra, Daniel; Plissonnier, M.; Reddy, R.; Sun, Min; Thayne, Iain; Torres, A.; Trivellin, Nicola; Unni, V.; Uren, Michael J.; Van Hove, Marleen; Wallis, David J.; Wang, J.; Xie, J.; Yagi, S.; Yang, Shu; Youtsey, C.; Yu, Ruiyang; Zanoni, Enrico; Zeltner, Stefan; Zhang, Yuhao

    2018-04-01

    Gallium nitride (GaN) is a compound semiconductor that has tremendous potential to facilitate economic growth in a semiconductor industry that is silicon-based and currently faced with diminishing returns of performance versus cost of investment. At a material level, its high electric field strength and electron mobility have already shown tremendous potential for high frequency communications and photonic applications. Advances in growth on commercially viable large area substrates are now at the point where power conversion applications of GaN are at the cusp of commercialisation. The future for building on the work described here in ways driven by specific challenges emerging from entirely new markets and applications is very exciting. This collection of GaN technology developments is therefore not itself a road map but a valuable collection of global state-of-the-art GaN research that will inform the next phase of the technology as market driven requirements evolve. First generation production devices are igniting large new markets and applications that can only be achieved using the advantages of higher speed, low specific resistivity and low saturation switching transistors. Major investments are being made by industrial companies in a wide variety of markets exploring the use of the technology in new circuit topologies, packaging solutions and system architectures that are required to achieve and optimise the system advantages offered by GaN transistors. It is this momentum that will drive priorities for the next stages of device research gathered here.

  6. CMOS Current-mode Operational Amplifier

    DEFF Research Database (Denmark)

    Kaulberg, Thomas

    1992-01-01

    current-mode feedback amplifier or a constant bandwidth in a transimpedance feedback amplifier. The amplifier is found to have a gain bandwidth product of 8 MHz, an offset current of 0.8 ¿A (signal-range ±700¿A) and a (theoretically) unlimited slew-rate. The amplifier is realized in a standard CMOS 2......A fully differential-input differential-output current-mode operational amplifier (COA) is described. The amplifier utilizes three second generation current-conveyors (CCII) as the basic building blocks. It can be configured to provide either a constant gain-bandwidth product in a fully balanced...

  7. A CMOS current-mode operational amplifier

    DEFF Research Database (Denmark)

    Kaulberg, Thomas

    1993-01-01

    current-mode feedback amplifier or a constant bandwidth in a transimpedance feedback amplifier. The amplifier is found to have a gain-bandwidth product of 3 MHz, an offset current of 0.8 μA (signal range ±700 μA), and a (theoretically) unlimited slew rate. The amplifier is realized in a standard CMOS 2......A fully differential-input, differential-output, current-mode operational amplifier (COA) is described. The amplifier utilizes three second-generation current conveyors (CCIIs) as the basic building blocks. It can be configured to provide either a constant gain-bandwidth product in a fully balanced...

  8. Amplified spontaneous emissions in a high-gain laser amplifier

    International Nuclear Information System (INIS)

    Osada, Hidenori; Gamo, Hideya.

    1978-01-01

    The gain and line-narrowing of the amplified spontaneous emissions(ASE) in a partially homogeneous high-gain Xe 3.51 μm laser amplifier were studied theoretically and experimentally with emphasis of saturation effect. The unidirectionally travelling ASE was generated by conveniently using optical isolators and used as a broadband radiation source. It has properties of 10 μW/mm 2 in intensity with fluctuation of less than 1% in 5 hours, 43.5 MHz of the linewidth and 1.0 x 10 -3 radians of beam divergence. The measured saturation intensity was 4.85 μW/mm 2 and a small signal gain was 0.1 cm -1 . The theoretical prediction of the line-narrowing shows reasonablly good agreement with the measured one. (author)

  9. Post-annealing effects on pulsed laser deposition-grown GaN thin films

    International Nuclear Information System (INIS)

    Cheng, Yu-Wen; Wu, Hao-Yu; Lin, Yu-Zhong; Lee, Cheng-Che; Lin, Ching-Fuh

    2015-01-01

    In this work, the post-annealing effects on gallium nitride (GaN) thin films grown from pulsed laser deposition (PLD) are investigated. The as-deposited GaN thin films grown from PLD are annealed at different temperatures in nitrogen ambient. Significant changes of the GaN crystal properties are observed. Raman spectroscopy is used to observe the crystallinity, the change of residual stress, and the thermal decomposition of the annealed GaN thin films. X-ray diffraction is also applied to identify the crystal phase of GaN thin films, and the surface morphology of GaN thin films annealed at different temperatures is observed by scanning electron microscopy. Through the above analyses, the GaN thin films grown by PLD undergo three stages: phase transition, stress alteration, and thermal decomposition. At a low annealing temperature, the rock salt GaN in GaN films is transformed into wurtzite. The rock salt GaN diminishes with increasing annealing temperature. At a medium annealing temperature, the residual stress of the film changes significantly from compressive strain to tensile strain. As the annealing temperature further increases, the GaN undergoes thermal decomposition and the surface becomes granular. By investigating the annealing temperature effects and controlling the optimized annealing temperature of the GaN thin films, we are able to obtain highly crystalline and strain-free GaN thin films by PLD. - Highlights: • The GaN thin film is grown on sapphire by pulsed laser deposition. • The GaN film undergoes three stages with increasing annealing temperature. • In the first stage, the film transfers from rock salt to wurtzite phase. • In the second stage, the stress in film changes from compressive to tensile. • In the final stage, the film thermally decomposes and becomes granular

  10. Alignment control and atomically-scaled heteroepitaxial interface study of GaN nanowires.

    Science.gov (United States)

    Liu, Qingyun; Liu, Baodan; Yang, Wenjin; Yang, Bing; Zhang, Xinglai; Labbé, Christophe; Portier, Xavier; An, Vladimir; Jiang, Xin

    2017-04-20

    Well-aligned GaN nanowires are promising candidates for building high-performance optoelectronic nanodevices. In this work, we demonstrate the epitaxial growth of well-aligned GaN nanowires on a [0001]-oriented sapphire substrate in a simple catalyst-assisted chemical vapor deposition process and their alignment control. It is found that the ammonia flux plays a key role in dominating the initial nucleation of GaN nanocrystals and their orientation. Typically, significant improvement of the GaN nanowire alignment can be realized at a low NH 3 flow rate. X-ray diffraction and cross-sectional scanning electron microscopy studies further verified the preferential orientation of GaN nanowires along the [0001] direction. The growth mechanism of GaN nanowire arrays is also well studied based on cross-sectional high-resolution transmission electron microscopy (HRTEM) characterization and it is observed that GaN nanowires have good epitaxial growth on the sapphire substrate following the crystallographic relationship between (0001) GaN ∥(0001) sapphire and (101[combining macron]0) GaN ∥(112[combining macron]0) sapphire . Most importantly, periodic misfit dislocations are also experimentally observed in the interface region due to the large lattice mismatch between the GaN nanowire and the sapphire substrate, and the formation of such dislocations will favor the release of structural strain in GaN nanowires. HRTEM analysis also finds the existence of "type I" stacking faults and voids inside the GaN nanowires. Optical investigation suggests that the GaN nanowire arrays have strong emission in the UV range, suggesting their crystalline nature and chemical purity. The achievement of aligned GaN nanowires will further promote the wide applications of GaN nanostructures toward diverse high-performance optoelectronic nanodevices including nano-LEDs, photovoltaic cells, photodetectors etc.

  11. Surface morphology of homoepitaxial GaN grown on non- and semipolar GaN substrates

    Energy Technology Data Exchange (ETDEWEB)

    Wernicke, Tim; Ploch, Simon [Institute of Solid State Physics, Technische Universitaet Berlin, Hardenbergstr. 36, 10623 Berlin (Germany); Hoffmann, Veit; Knauer, Arne; Weyers, Markus [Ferdinand-Braun-Institut, Leibniz Institut fuer Hoechstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin (Germany); Kneissl, Michael [Institute of Solid State Physics, Technische Universitaet Berlin, Hardenbergstr. 36, 10623 Berlin (Germany); Ferdinand-Braun-Institut, Leibniz Institut fuer Hoechstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin (Germany)

    2011-03-15

    GaN layers on bulk m-plane, (11 anti 22), (10 anti 12) and (10 anti 11) GaN substrates were grown by metal organic vapor phase epitaxy. XRD rocking curves have a FWHM of less than 150'', indicating excellent crystalline quality. However in many cases surface morphology exhibits hillocks with a height of 1-2 {mu}m and a lateral extension of 50-200 {mu}m whereas a smooth surface would be desirable for optoelectronic devices. The influence of growth parameters on the surface morphology was studied. The goal was, to constrain the material redistribution, that is necessary to form large hillocks. This was achieved by lowering the adatom diffusion length by a reduction of temperature and an increased reactor pressure. In the case of the (10 anti 11) and (10 anti 12) semipolar planes a reduction of the adatom diffusion length leads to a reduction of hillock density, hillock size and a smoother surface between hillocks. However, the m-plane surface does not react to a reduction of adatom mobility. Even at 890 C and 400 mbar rectangular pyramids cover the surface. In contrast to the other planes, the (11 anti 22) becomes instable, when the adatom diffusion length is reduced. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  12. High Voltage GaN Schottky Rectifiers

    Energy Technology Data Exchange (ETDEWEB)

    CAO,X.A.; CHO,H.; CHU,S.N.G.; CHUO,C.-C.; CHYI,J.-I.; DANG,G.T.; HAN,JUNG; LEE,C.-M.; PEARTON,S.J.; REN,F.; WILSON,R.G.; ZHANG,A.P.

    1999-10-25

    Mesa and planar GaN Schottky diode rectifiers with reverse breakdown voltages (V{sub RB}) up to 550V and >2000V, respectively, have been fabricated. The on-state resistance, R{sub ON}, was 6m{Omega}{center_dot} cm{sup 2} and 0.8{Omega}cm{sup 2}, respectively, producing figure-of-merit values for (V{sub RB}){sup 2}/R{sub ON} in the range 5-48 MW{center_dot}cm{sup -2}. At low biases the reverse leakage current was proportional to the size of the rectifying contact perimeter, while at high biases the current was proportional to the area of this contact. These results suggest that at low reverse biases, the leakage is dominated by the surface component, while at higher biases the bulk component dominates. On-state voltages were 3.5V for the 550V diodes and {ge}15 for the 2kV diodes. Reverse recovery times were <0.2{micro}sec for devices switched from a forward current density of {approx}500A{center_dot}cm{sup -2} to a reverse bias of 100V.

  13. Transient atomic behavior and surface kinetics of GaN

    International Nuclear Information System (INIS)

    Moseley, Michael; Billingsley, Daniel; Henderson, Walter; Trybus, Elaissa; Doolittle, W. Alan

    2009-01-01

    An in-depth model for the transient behavior of metal atoms adsorbed on the surface of GaN is developed. This model is developed by qualitatively analyzing transient reflection high energy electron diffraction (RHEED) signals, which were recorded for a variety of growth conditions of GaN grown by molecular-beam epitaxy (MBE) using metal-modulated epitaxy (MME). Details such as the initial desorption of a nitrogen adlayer and the formation of the Ga monolayer, bilayer, and droplets are monitored using RHEED and related to Ga flux and shutter cycles. The suggested model increases the understanding of the surface kinetics of GaN, provides an indirect method of monitoring the kinetic evolution of these surfaces, and introduces a novel method of in situ growth rate determination.

  14. Transient atomic behavior and surface kinetics of GaN

    Science.gov (United States)

    Moseley, Michael; Billingsley, Daniel; Henderson, Walter; Trybus, Elaissa; Doolittle, W. Alan

    2009-07-01

    An in-depth model for the transient behavior of metal atoms adsorbed on the surface of GaN is developed. This model is developed by qualitatively analyzing transient reflection high energy electron diffraction (RHEED) signals, which were recorded for a variety of growth conditions of GaN grown by molecular-beam epitaxy (MBE) using metal-modulated epitaxy (MME). Details such as the initial desorption of a nitrogen adlayer and the formation of the Ga monolayer, bilayer, and droplets are monitored using RHEED and related to Ga flux and shutter cycles. The suggested model increases the understanding of the surface kinetics of GaN, provides an indirect method of monitoring the kinetic evolution of these surfaces, and introduces a novel method of in situ growth rate determination.

  15. Optical and Structural Characterizations of GaN Nano structures

    International Nuclear Information System (INIS)

    Shekari, L.; Abu Hassan, H.; Thahab, S.M.

    2011-01-01

    We have grown wurtzite GaN nano wires (NWs) on polished silicon (Si) either with or without Au as catalyst, using commercial GaN powder by thermal evaporation in an atmosphere of argon (Ar) gas. Structural and optical characterizations were performed using high resolution X-ray diffraction (HR-XRD), scanning electron microscopy (SEM), photoluminescence (PL) and energy-dispersive X-ray spectroscopy (EDX) spectroscopy. Results indicate that the nano wires are of single-crystal hexagonal GaN and the nano wires on Si with Au catalyst are more oriented than those without Au catalyst; and using catalyst make the NWs grow much faster and quite well-ordered. The compositional quality of the grown nano wires on the substrates are mostly same, however the nano wires on the Au coated silicon are of low density, while the nano wires on the Si are of high density. (author)

  16. Studies on electronic structure of GaN(0001) surface

    CERN Document Server

    Xie Chang Kun; Xu Fa Qiang; Deng Rui; Liu Feng; Yibulaxin, K

    2002-01-01

    An electronic structure investigation on GaN(0001) is reported. The authors employ a full-potential linearized augmented plane-wave (FPLAPW) approach to calculate the partial density of state, which is in agreement with previous experimental results. The effects of the Ga3d semi-core levels on the electronic structure of GaN are discussed. The valence-electronic structure of the wurtzite GaN(0001) surface is investigated using synchrotron radiation excited angle-resolved photoemission spectroscopy. The bulk bands dispersion along GAMMA A direction in the Brillouin zones is measured using normal-emission spectra by changing photon-energy. The band structure derived from authors' experimental data is compared well with the results of authors' FPLAPW calculation. Furthermore, off-normal emission spectra are also measured along the GAMMA K and GAMMA M directions. Two surface states are identified, and their dispersions are characterized

  17. High-Sensitivity GaN Microchemical Sensors

    Science.gov (United States)

    Son, Kyung-ah; Yang, Baohua; Liao, Anna; Moon, Jeongsun; Prokopuk, Nicholas

    2009-01-01

    Systematic studies have been performed on the sensitivity of GaN HEMT (high electron mobility transistor) sensors using various gate electrode designs and operational parameters. The results here show that a higher sensitivity can be achieved with a larger W/L ratio (W = gate width, L = gate length) at a given D (D = source-drain distance), and multi-finger gate electrodes offer a higher sensitivity than a one-finger gate electrode. In terms of operating conditions, sensor sensitivity is strongly dependent on transconductance of the sensor. The highest sensitivity can be achieved at the gate voltage where the slope of the transconductance curve is the largest. This work provides critical information about how the gate electrode of a GaN HEMT, which has been identified as the most sensitive among GaN microsensors, needs to be designed, and what operation parameters should be used for high sensitivity detection.

  18. Mg doping and its effect on the semipolar GaN(1122) growth kinetics

    International Nuclear Information System (INIS)

    Lahourcade, L.; Wirthmueller, A.; Monroy, E.; Pernot, J.; Chauvat, M. P.; Ruterana, P.; Laufer, A.; Eickhoff, M.

    2009-01-01

    We report the effect of Mg doping on the growth kinetics of semipolar GaN(1122) synthesized by plasma-assisted molecular-beam epitaxy. Mg tends to segregate on the surface, inhibiting the formation of the self-regulated Ga film which is used as a surfactant for the growth of undoped and Si-doped GaN(1122). We observe an enhancement of Mg incorporation in GaN(1122) compared to GaN(0001). Typical structural defects or polarity inversion domains found in Mg-doped GaN(0001) were not observed for the semipolar films investigated in the present study.

  19. Conductivity based on selective etch for GaN devices and applications thereof

    Science.gov (United States)

    Zhang, Yu; Sun, Qian; Han, Jung

    2015-12-08

    This invention relates to methods of generating NP gallium nitride (GaN) across large areas (>1 cm.sup.2) with controlled pore diameters, pore density, and porosity. Also disclosed are methods of generating novel optoelectronic devices based on porous GaN. Additionally a layer transfer scheme to separate and create free-standing crystalline GaN thin layers is disclosed that enables a new device manufacturing paradigm involving substrate recycling. Other disclosed embodiments of this invention relate to fabrication of GaN based nanocrystals and the use of NP GaN electrodes for electrolysis, water splitting, or photosynthetic process applications.

  20. A DFT study on NEA GaN photocathode with an ultrathin n-type Si-doped GaN cap layer

    Science.gov (United States)

    Xia, Sihao; Liu, Lei; Kong, Yike; Diao, Yu

    2016-10-01

    Due to the drawbacks of conventional negative electron affinity (NEA) GaN photocathodes activated by Cs or Cs/O, a new-type NEA GaN photocathodes with heterojunction surface dispense with Cs activation are proposed. This structure can be obtained through the coverage of an ultrathin n-type Si-doped GaN cap layer on the p-type Mg-doped GaN emission layer. The influences of the cap layer on the photocathode are calculated using DFT. This study indicates that the n-type cap layer can promote the photoemission characteristics of GaN photocathode and demonstrates the probability of the preparation of a NEA GaN photocathode with an n-type cap layer.

  1. Single conversion stage amplifier - SICAM

    Energy Technology Data Exchange (ETDEWEB)

    Ljusev, P.

    2005-12-15

    This Ph.D. thesis presents a thorough analysis of the so called SICAM - SIngle Converter stage AMplifier approach to building direct energy conversion audio power amplifiers. The mainstream approach for building isolated audio power amplifiers today consists of isolated DC power supply and Class D amplifier, which essentially represents a two stage solution, where each of the components can be viewed as separate and independent part. The proposed SICAM solution strives for direct energy conversion from the mains to the audio output, by dedicating the operation of the components one to another and integrating their functions, so that the final audio power amplifier represents a single-stage topology with higher efficiency, lower volume, less board space, lower component count and subsequently lower cost. The SICAM approach is both applicable to non-isolated and isolated audio power amplifiers, but the problems encountered in these two cases are different. Non-isolated SICAM solutions are intended for both AC mains-connected and battery-powered devices. In non-isolated mains-connected SICAMs the main idea is to simplify the power supply or even provide integrated power factor correction (PFC) functions, while still maintaining low component stress and good audio performance by generally decreasing the input voltage level to the Class D audio power amplifier. On the other hand, non-isolated battery-powered SICAMs have to cope with the ever changing battery voltage and provide output voltage levels which are both lower and higher than the battery voltage, while still being simple and single-stage energy conversion solutions. In isolated SICAMs the isolation transformer adjusts the voltage level on the secondary side to the desired level, so the main challenges here are decreasing the size of the magnetic core and reducing the number and size of bulky reactive components as much as possible. The main focus of this thesis is directed towards the isolated SICAMs and

  2. Analog circuit design designing high performance amplifiers

    CERN Document Server

    Feucht, Dennis

    2010-01-01

    The third volume Designing High Performance Amplifiers applies the concepts from the first two volumes. It is an advanced treatment of amplifier design/analysis emphasizing both wideband and precision amplification.

  3. Higher order mode optical fiber Raman amplifiers

    DEFF Research Database (Denmark)

    Rottwitt, Karsten; Friis, Søren Michael Mørk; Usuga Castaneda, Mario A.

    2016-01-01

    We review higher order mode Raman amplifiers and discuss recent theoretical as well as experimental results including system demonstrations.......We review higher order mode Raman amplifiers and discuss recent theoretical as well as experimental results including system demonstrations....

  4. SPS RF System Amplifier plant

    CERN Multimedia

    1977-01-01

    The picture shows a 2 MW, 200 MHz amplifier plant with feeder lines. The main RF-system of the SPS comprises four cavities: two of 20 m length and two of 16.5 m length. They are all installed in one long straight section (LSS 3). These cavities are of the travelling-wave type operating at a centre frequency of 200.2 MHz. They are wideband, filling time about 700 ns and untuned. The power amplifiers, using tetrodes are installed in a surface building 200 m from the cavities. Initially only two cavities were installed, a third cavity was installed in 1978 and a forth one in 1979. The number of power amplifiers was also increased: to the first 2 MW plant a second 2 MW plant was added and by end 1979 there were 8 500 kW units combined in pairs to feed each of the 4 cavities with up to about 1 MW RF power, resulting in a total accelerating voltage of about 8 MV. See also 7412016X, 7412017X, 7411048X.

  5. Challenges in higher order mode Raman amplifiers

    DEFF Research Database (Denmark)

    Rottwitt, Karsten; Nielsen, Kristian; Friis, Søren Michael Mørk

    2015-01-01

    A higher order Raman amplifier model that take random mode coupling into account ispresented. Mode dependent gain and signal power fluctuations at the output of the higher order modeRaman amplifier are discussed......A higher order Raman amplifier model that take random mode coupling into account ispresented. Mode dependent gain and signal power fluctuations at the output of the higher order modeRaman amplifier are discussed...

  6. European Research on THz Vacuum Amplifiers

    DEFF Research Database (Denmark)

    Brunetti, F.; Cojocarua, C.-S.; de Rossi, A.

    2010-01-01

    The OPTHER (OPtically Driven TeraHertz AmplifiERs) project represents a considerable advancement in the field of high frequency amplification. The design and realization of a THz amplifier within this project is a consolidation of efforts at the international level from the main players...... of the European research, academy and industry in vacuum electronics. This paper describes the status of the project and progress towards the THz amplifier realization....

  7. Integrated amplifying circuit with MOS transistors

    Energy Technology Data Exchange (ETDEWEB)

    Baylac, B; Merckel, G; Meunier, P

    1974-01-25

    The invention relates to a feedback-pass-band amplifier with MOS-transistors. The differential stage of conventional amplifiers is changed into an adding state, whereas the differential amplification stages are changed into amplifier inverter stages. All MOS transistors used in that amplifier are of similar configuration and are interdigitized, whereby the operating speed dispersion is reduced. This can be applied to obtaining a measurement channel for proportional chambers.

  8. The influence of Fe doping on the surface topography of GaN epitaxial material

    International Nuclear Information System (INIS)

    Cui Lei; Yin Haibo; Jiang Lijuan; Wang Quan; Feng Chun; Xiao Hongling; Wang Cuimei; Wang Xiaoliang; Gong Jiamin; Zhang Bo; Li Baiquan; Wang Zhanguo

    2015-01-01

    Fe doping is an effective method to obtain high resistivity GaN epitaxial material. But in some cases, Fe doping could result in serious deterioration of the GaN material surface topography, which will affect the electrical properties of two dimensional electron gas (2DEG) in HEMT device. In this paper, the influence of Fe doping on the surface topography of GaN epitaxial material is studied. The results of experiments indicate that the surface topography of Fe-doped GaN epitaxial material can be effectively improved and the resistivity could be increased after increasing the growth rate of GaN materials. The GaN material with good surface topography can be manufactured when the Fe doping concentration is 9 × 10 19 cm −3 . High resistivity GaN epitaxial material which is 1 × 10 9 Ω·cm is achieved. (paper)

  9. The origin of the residual conductivity of GaN films on ferroelectric materials

    Science.gov (United States)

    Lee, Kyoung-Keun; Cai, Zhuhua; Ziemer, Katherine; Doolittle, William Alan

    2009-08-01

    In this paper, the origin of the conductivity of GaN films grown on ferroelectric materials was investigated using XPS, AES, and XRD analysis tools. Depth profiles confirmed the existence of impurities in the GaN film originating from the substrates. Bonding energy analysis from XPS and AES verified that oxygen impurities from the substrates were the dominant origin of the conductivity of the GaN film. Furthermore, Ga-rich GaN films have a greater chance of enhancing diffusion of lithium oxide from the substrates, resulting in more substrate phase separation and a wider inter-mixed region confirmed by XRD. Therefore, the direct GaN film growth on ferroelectric materials causes impurity diffusion from the substrates, resulting in highly conductive GaN films. Future work needs to develop non-conductive buffer layers for impurity suppression in order to obtain highly resistive GaN films.

  10. GaN epitaxial layers grown on multilayer graphene by MOCVD

    Science.gov (United States)

    Li, Tianbao; Liu, Chenyang; Zhang, Zhe; Yu, Bin; Dong, Hailiang; Jia, Wei; Jia, Zhigang; Yu, Chunyan; Gan, Lin; Xu, Bingshe

    2018-04-01

    In this study, GaN epitaxial layers were successfully deposited on a multilayer graphene (MLG) by using metal-organic chemical vapor deposition (MOCVD). Highly crystalline orientations of the GaN films were confirmed through electron backscatter diffraction (EBSD). An epitaxial relationship between GaN films and MLG is unambiguously established by transmission electron microscope (TEM) analysis. The Raman spectra was used to analyze the internal stress of GaN films, and the spectrum shows residual tensile stress in the GaN films. Moreover, the results of the TEM analysis and Raman spectra indicate that the high quality of the MLG substrate is maintained even after the growth of the GaN film. This high-quality MLG makes it possible to easily remove epitaxial layers from the supporting substrate by micro-mechanical exfoliation technology. This work can aid in the development of transferable devices using GaN films.

  11. A pulse amplifier for nuclear instrumentation

    International Nuclear Information System (INIS)

    Martin, D.; Cliff, P.

    1987-01-01

    A Class-A 1 Watt amplifier has been designed and optimized for nanosecond pulses. Spanning .01MHz to 1300Mhz, signal gain is 26dB with gain flatness of 1dB. The amplifier drive +- 10 volts across 500 with 350ps risetime. Each amplifier is housed in a 2-wide NIM

  12. Remote Acquisition Amplifier For 50-Ohm Cable

    Science.gov (United States)

    Amador, Jose J.

    1995-01-01

    Buffer-amplifier unit designed to drive 50-Ohm cables up to 100 ft. (30 m) long, compensating for attenuation in cables and enabling remote operation of oscilloscopes. Variable resistor provides for adjustment of gain of amplifier, such that overall gain from input terminals of amplifier to output end of cable set to unity.

  13. An Implantable CMOS Amplifier for Nerve Signals

    DEFF Research Database (Denmark)

    Nielsen, Jannik Hammel; Lehmann, Torsten

    2003-01-01

    In this paper, a low noise high gain CMOS amplifier for minute nerve signals is presented. The amplifier is constructed in a fully differential topology to maximize noise rejection. By using a mixture of weak- and strong inversion transistors, optimal noise suppression in the amplifier is achieved....... A continuous-time current-steering offset-compensation technique is utilized in order to minimize the noise contribution and to minimize dynamic impact on the amplifier input nodes. The method for signal recovery from noisy nerve signals is presented. A prototype amplifier is realized in a standard digital 0...

  14. Semiconductor quantum-dot lasers and amplifiers

    DEFF Research Database (Denmark)

    Hvam, Jørn Märcher; Borri, Paola; Ledentsov, N. N.

    2002-01-01

    -power surface emitting VCSELs. We investigated the ultrafast dynamics of quantum-dot semiconductor optical amplifiers. The dephasing time at room temperature of the ground-state transition in semiconductor quantum dots is around 250 fs in an unbiased amplifier, decreasing to below 50 fs when the amplifier...... is biased to positive net gain. We have further measured gain recovery times in quantum dot amplifiers that are significantly lower than in bulk and quantum-well semiconductor optical amplifiers. This is promising for future demonstration of quantum dot devices with high modulation bandwidth...

  15. CMOS Current-mode Operational Amplifier

    OpenAIRE

    Kaulberg, Thomas

    1992-01-01

    A fully differential-input differential-output current-mode operational amplifier (COA) is described. The amplifier utilizes three second generation current-conveyors (CCII) as the basic building blocks. It can be configured to provide either a constant gain-bandwidth product in a fully balanced current-mode feedback amplifier or a constant bandwidth in a transimpedance feedback amplifier. The amplifier is found to have a gain bandwidth product of 8 MHz, an offset current of 0.8 ¿A (signal-r...

  16. NIF/LMJ prototype amplifier mechanical design

    International Nuclear Information System (INIS)

    Horvath, J.

    1996-10-01

    Amplifier prototypes for the National Ignition Facility and the Laser Megajoule will be tested at Lawrence Livermore National Laboratory. The prototype amplifier, which is an ensemble of modules from LLNL and Centre d'Etudes de Limeil-Valenton, is cassette-based with bottom access for maintenance. A sealed maintenance transfer vehicle which moves optical cassettes between the amplifier and the assembly cleanroom, and a vacuum gripper which holds laser slabs during cassette assembly will also be tested. The prototype amplifier will be used to verify amplifier optical performance, thermal recovery time, and cleanliness of mechanical operations

  17. HIGH AVERAGE POWER OPTICAL FEL AMPLIFIERS

    International Nuclear Information System (INIS)

    2005-01-01

    Historically, the first demonstration of the optical FEL was in an amplifier configuration at Stanford University [l]. There were other notable instances of amplifying a seed laser, such as the LLNL PALADIN amplifier [2] and the BNL ATF High-Gain Harmonic Generation FEL [3]. However, for the most part FELs are operated as oscillators or self amplified spontaneous emission devices. Yet, in wavelength regimes where a conventional laser seed can be used, the FEL can be used as an amplifier. One promising application is for very high average power generation, for instance FEL's with average power of 100 kW or more. The high electron beam power, high brightness and high efficiency that can be achieved with photoinjectors and superconducting Energy Recovery Linacs (ERL) combine well with the high-gain FEL amplifier to produce unprecedented average power FELs. This combination has a number of advantages. In particular, we show that for a given FEL power, an FEL amplifier can introduce lower energy spread in the beam as compared to a traditional oscillator. This properly gives the ERL based FEL amplifier a great wall-plug to optical power efficiency advantage. The optics for an amplifier is simple and compact. In addition to the general features of the high average power FEL amplifier, we will look at a 100 kW class FEL amplifier is being designed to operate on the 0.5 ampere Energy Recovery Linac which is under construction at Brookhaven National Laboratory's Collider-Accelerator Department

  18. Improved crystal quality of a-plane GaN with high- temperature 3-dimensional GaN buffer layers deposited by using metal-organic chemical vapor deposition

    International Nuclear Information System (INIS)

    Park, Sung Hyun; Moon, Dae Young; Kim, Bum Ho; Kim, Dong Uk; Chang, Ho Jun; Jeon, Heon Su; Yoon, Eui Joon; Joo, Ki Su; You, Duck Jae; Nanishi, Yasushi

    2012-01-01

    a-plane GaN on r-plane sapphire substrates suffers from high density defects and rough surfaces. To obtain pit-free a-plane GaN by metal-organic chemical vapor deposition, we intentionally grew high-temperature (HT) 3-dimensional (3D) GaN buffer layers on a GaN nucleation layer. The effects of the HT 3D GaN buffer layers on crystal quality and the surface morphology of a-plane GaN were studied. The insertion of a 3D GaN buffer layer with an optimum thickness was found to be an effective method to obtain pit-free a-plane GaN with improved crystalline quality on r-plane sapphire substrates. An a-plane GaN light emitting diode (LED) at an emission wavelength around 480 nm with negligible peak shift was successfully fabricated.

  19. Audio power amplifier design handbook

    CERN Document Server

    Self, Douglas

    2013-01-01

    This book is essential for audio power amplifier designers and engineers for one simple reason...it enables you as a professional to develop reliable, high-performance circuits. The Author Douglas Self covers the major issues of distortion and linearity, power supplies, overload, DC-protection and reactive loading. He also tackles unusual forms of compensation and distortion produced by capacitors and fuses. This completely updated fifth edition includes four NEW chapters including one on The XD Principle, invented by the author, and used by Cambridge Audio. Cro

  20. Cathode-follower power amplifier

    International Nuclear Information System (INIS)

    Giordano, S.; Puglisi, M.

    1983-01-01

    In circular accelerators and particularly in storage rings it is essential that the total impedance, as seen by the beam, be kept below some critical value. A model of the accelerating system was built using a single-ended cathode-follower amplifier driving a ferrite-loaded cavity. The system operated at 234.5 kHz with a peak output voltage of +-10 kV on the gap. The dynamic output impedance, as measured on the gap, was < 15 ohms

  1. Thermal quenching of the yellow luminescence in GaN

    Science.gov (United States)

    Reshchikov, M. A.; Albarakati, N. M.; Monavarian, M.; Avrutin, V.; Morkoç, H.

    2018-04-01

    We observed varying thermal quenching behavior of the yellow luminescence band near 2.2 eV in different GaN samples. In spite of the different behavior, the yellow band in all the samples is caused by the same defect—the YL1 center. In conductive n-type GaN, the YL1 band quenches with exponential law, and the Arrhenius plot reveals an ionization energy of ˜0.9 eV for the YL1 center. In semi-insulating GaN, an abrupt and tunable quenching of the YL1 band is observed, where the apparent activation energy in the Arrhenius plot is not related to the ionization energy of the defect. In this case, the ionization energy can be found by analyzing the shift of the characteristic temperature of PL quenching with excitation intensity. We conclude that only one defect, namely, the YL1 center, is responsible for the yellow band in undoped and doped GaN samples grown by different techniques.

  2. Taevo Gans : särama pandud postmodernism / Kadi Viljak

    Index Scriptorium Estoniae

    Viljak, Kadi

    2004-01-01

    Viking Window ASi büroo ja ekspositsioonisaal 1979. a. Jüri Okase projekteeritud endises Paide KEKi remontmehaanikatöökoja hoones Mäos. Sisearhitekt Taevo Gans, kelle projekteeritud on ka ettevõtte juhi töölaud. T. Gansi kommentaarid. Ill.: 6 värv. sisevaadet

  3. GaN and ZnO nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Fuendling, Soenke; Soekmen, Uensal; Behrends, Arne; Al-Suleiman, Mohamed Aid Mansur; Merzsch, Stephan; Li, Shunfeng; Bakin, Andrey; Wehmann, Hergo-Heinrich; Waag, Andreas [Institut fuer Halbleitertechnik, Technische Universitaet Braunschweig, Braunschweig (Germany); Laehnemann, Jonas; Jahn, Uwe; Trampert, Achim; Riechert, Henning [Paul-Drude-Institut fuer Festkoerperelektronik, Berlin (Germany)

    2010-10-15

    GaN and ZnO are both wide band gap semiconductors with interesting properties concerning optoelectronic and sensor device applications. Due to the lack or the high costs of native substrates, alternatives like sapphire, silicon, or silicon carbide are taken, but the resulting lattice and thermal mismatches lead to increased defect densities which reduce the material quality. In contrast, nanostructures with high aspect ratio have lower defect densities as compared to layers. In this work, we give an overview on our results achieved on both ZnO as well as GaN based nanorods. ZnO nanostructures were grown by a wet chemical approach as well as by VPT on different substrates - even on flexible polymers. To compare the growth results we analyzed the structures by XRD and PL and show possible device applications. The GaN nano- and microstructures were grown by metal organic vapor phase epitaxy either in a self-organized process or by selective area growth for a better control of shape and material composition. Finally we take a look onto possible device applications, presenting our attempts, e.g., to build LEDs based on GaN nanostructures. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

  4. Optical Properties and Lasing in GaN

    National Research Council Canada - National Science Library

    Song, J

    2001-01-01

    .... In the second article. femtosecond pump-probe transmission spectroscopy was used to study the nonequilibrium carrier dynamics in a GaN thin film at 10 K with carrier densities ranging from 4 x 10(exp 17) to 10(exp 19)/cu cm...

  5. Ka-Band Rf Transmission Line Components for a High-Gradient Linear Accelerator. Final report

    International Nuclear Information System (INIS)

    Hirshfield, Jay L.

    2005-01-01

    High-power, high-vacuum prototypes of a variety of components for use at 34 GHz were developed. These include waveguide tapers, right-angle miter bends, windows, mode converters, power combiners, mode launchers, phase shifters, dual directional couplers, and loads. High-power, high-vacuum prototypes of all the components were built and tested up to 45 MW, using the Omega-P 34-GHz magnicon. Peak power limits for the components were determined using a quasi-optical rf pulse compressor, developed under a companion project. The components and the magnicon were configured into a user's facility for research and development by others on high-gradient accelerator structures for a future high-energy electron-positron collider.

  6. Ka-Band Digital Beamforming and SweepSAR Demonstration for Ice and Solid Earth Topography

    Science.gov (United States)

    Sadowy, Gregory; Ghaemi, Hirad; Heavy, Brandon; Perkovic, Dragana; Quddus, Momin; Zawadzki, Mark; Moller, Delwyn

    2010-01-01

    GLISTIN is an instrument concept for a single-pass interferometric SAR operating at 35.6 GHz. To achieve large swath widths using practical levels of transmitter power, a digitally-beamformed planar waveguide array is used. This paper describes results from a ground-based demonstration of a 16-receiver prototype. Furthermore, SweepSAR is emerging as promising technique for achieving very wide swaths for surface change detection. NASA and DLR are studying this approach for the DESDynI and Tandem-L missions. SweepSAR employs a reflector with a digitally-beamformed array feed. We will describe development of an airborne demonstration of SweepSAR using the GLISTIN receiver array and a reflector.

  7. Design, Analysis, and Verification of Ka-Band Pattern Reconfigurable Patch Antenna Using RF MEMS Switches

    Directory of Open Access Journals (Sweden)

    Zhongliang Deng

    2016-08-01

    Full Text Available This paper proposes a radiating pattern reconfigurable antenna by employing RF Micro-electromechanical Systems (RF MEMS switches. The antenna has a low profile and small size of 4 mm × 5 mm × 0.4 mm, and mainly consists of one main patch, two assistant patches, and two RF MEMS switches. By changing the RF MEMS switches operating modes, the proposed antenna can switch among three radiating patterns (with main lobe directions of approximately −17.0°, 0° and +17.0° at 35 GHz. The far-field vector addition model is applied to analyse the pattern. Comparing the measured results with analytical and simulated results, good agreements are obtained.

  8. Ka Band Highly Constrained Deployable Antenna for RaInCube

    Data.gov (United States)

    National Aeronautics and Space Administration — Precipitation radars in Low-Earth-Orbit (LEO) provide vertically resolved profiles of rain and snow on a global scale. Nevertheless, observations available from LEO...

  9. A High Performance Frequency Standard and Distribution System for Cassini Ka-Band Experiment

    National Research Council Canada - National Science Library

    Wang, R. T; Calhoun, M. D; Kirk, A; Diener, W. A; Dick, G. J; Tjoelker, R. L

    2005-01-01

    ...), and 10 Kelvin Cryocooled Sapphire Oscillator (10K CSO) and frequency-lock-loop, are integrated to achieve the very high performance, ground based frequency reference at a remote antenna site located 16 km from the hydrogen maser...

  10. A High Performance Frequency Standard and Distribution System for Cassini Ka-Band Experiment

    Science.gov (United States)

    2005-08-01

    Orthogonal Polarization In Anisotropic Dielectric Resonators”, Proceedings of the 2002 IEEE International Frequency Control Symposium , pp. 553-558...2002. [9] G. J. Dick, Rabi T. Wang, Robert Tjoelker, “Design and Progress Report for Compact Cryocooled Sapphire Oscillator "VCSO"”, Proc. 2005 Joint...IEEE FCS/ PTTI. [10] R. Basu, G. J. Dick, Rabi T. Wang,” Novel Design of an All- Cryogenic RF Pound Circuit “,Proc. 2005 Joint IEEE FCS/ PTTI

  11. Ka-Band ARM Zenith Radar Corrections Value-Added Product

    Energy Technology Data Exchange (ETDEWEB)

    Johnson, Karen [Brookhaven National Lab. (BNL), Upton, NY (United States); Toto, Tami [Brookhaven National Lab. (BNL), Upton, NY (United States); Giangrande, Scott [Brookhaven National Lab. (BNL), Upton, NY (United States)

    2017-10-15

    The KAZRCOR Value -added Product (VAP) performs several corrections to the ingested KAZR moments and also creates a significant detection mask for each radar mode. The VAP computes gaseous attenuation as a function of time and radial distance from the radar antenna, based on ambient meteorological observations, and corrects observed reflectivities for that effect. KAZRCOR also dealiases mean Doppler velocities to correct velocities whose magnitudes exceed the radar’s Nyquist velocity. Input KAZR data fields are passed through into the KAZRCOR output files, in their native time and range coordinates. Complementary corrected reflectivity and velocity fields are provided, along with a mask of significant detections and a number of data quality flags. This report covers the KAZRCOR VAP as applied to the original KAZR radars and the upgraded KAZR2 radars. Currently there are two separate code bases for the different radar versions, but once KAZR and KAZR2 data formats are harmonized, only a single code base will be required.

  12. A study on the ferrite image guide for Ka-band

    International Nuclear Information System (INIS)

    Arestova, Iliyana

    2018-01-01

    A ferrite image guide (FIG) has been investigated experimentally in the frequency range 26÷40 GHz by cavity resonator method (CRM) and theoretically by finite element method (FEM). The FIG’s wavelengths have been obtained and compared in a demagnetized state as well as in three different cases of homogeneous magnetization: 1) magnetization, which is perpendicular to the direction of propagation and parallel to the ground plane (Case 1); 2) magnetization, which is perpendicular to the direction of propagation and the ground plane (Case 2); 3) magnetization, which is parallel to the direction of propagation (Case 3). The distribution of the electric field magnitude in these three cases of magnetization has been verified by numerical simulations. Our investigations have shown that Case 2 seems to be the most promising from a point of view of practical realization of millimetre wave non reciprocal devices. Only in this case an asymmetrical shift of the maximum of the electric field magnitude has been observed, which fully corresponds to non reciprocal behaviour of coupled ferrite-dielectric image guide structures in millimetre wave range. Key words: ferrite devices, image guide, cavity resonator method, finite element method, millimetre waves

  13. Ka-band Doppler Scatterometer for Measurements of Ocean Vector Winds and Surface Currents

    Data.gov (United States)

    National Aeronautics and Space Administration — Ocean surface currents impact heat transport, surface momentum and gas fluxes, ocean productivity and marine biological communities. Ocean currents also have social...

  14. Superradiant Ka-band Cherenkov oscillator with 2-GW peak power

    International Nuclear Information System (INIS)

    Rostov, V. V.; Romanchenko, I. V.; Pedos, M. S.; Rukin, S. N.; Sharypov, K. A.; Shpak, V. G.; Shunailov, S. A.; Ul'masculov, M. R.; Yalandin, M. I.

    2016-01-01

    The generation of a 2-GW microwave superradiance (SR) pulses has been demonstrated at 29-GHz using a single-mode relativistic backward-wave oscillator possessing the beam-to-wave power conversion factor no worse than 100%. A record-breaking radiation power density in the slow-wave structure (SWS) of ∼1.5 GW/cm"2 required the use of high guiding magnetic field (7 T) decreasing the beam losses to the SWS in strong rf fields. Despite the field strength at the SWS wall of 2 MV/cm, a single-pass transmission mode of a short SR pulse in the SWS allows one to obtain extremely high power density in subnanosecond time scale due to time delay in the development of the breakdown phenomena.

  15. Gallium adsorption on (0001) GaN surfaces

    International Nuclear Information System (INIS)

    Adelmann, Christoph; Brault, Julien; Mula, Guido; Daudin, Bruno; Lymperakis, Liverios; Neugebauer, Joerg

    2003-01-01

    We study the adsorption behavior of Ga on (0001) GaN surfaces combining experimental specular reflection high-energy electron diffraction with theoretical investigations in the framework of a kinetic model for adsorption and ab initio calculations of energy parameters. Based on the experimental results we find that for substrate temperatures and Ga fluxes typically used in molecular-beam epitaxy of GaN, finite equilibrium Ga surface coverages can be obtained. The measurement of a Ga/GaN adsorption isotherm allows the quantification of the equilibrium Ga surface coverage as a function of the impinging Ga flux. In particular, we show that a large range of Ga fluxes exists, where 2.5±0.2 monolayers (in terms of the GaN surface site density) of Ga are adsorbed on the GaN surface. We further demonstrate that the structure of this adsorbed Ga film is in good agreement with the laterally contracted Ga bilayer model predicted to be most stable for strongly Ga-rich surfaces [Northrup et al., Phys. Rev. B 61, 9932 (2000)]. For lower Ga fluxes, a discontinuous transition to Ga monolayer equilibrium coverage is found, followed by a continuous decrease towards zero coverage; for higher Ga fluxes, Ga droplet formation is found, similar to what has been observed during Ga-rich GaN growth. The boundary fluxes limiting the region of 2.5 monolayers equilibrium Ga adsorption have been measured as a function of the GaN substrate temperature giving rise to a Ga/GaN adsorption phase diagram. The temperature dependence is discussed within an ab initio based growth model for adsorption taking into account the nucleation of Ga clusters. This model consistently explains recent contradictory results of the activation energy describing the critical Ga flux for the onset of Ga droplet formation during Ga-rich GaN growth [Heying et al., J. Appl. Phys. 88, 1855 (2000); Adelmann et al., J. Appl. Phys. 91, 9638 (2002).

  16. Efficiency Enhancement of Pico-cell Base Station Power Amplifier MMIC in Gallium Nitride HFET Technology Using the Doherty technique

    Science.gov (United States)

    Seneviratne, Sashieka

    With the growth of smart phones, the demand for more broadband, data centric technologies are being driven higher. As mobile operators worldwide plan and deploy 4th generation (4G) networks such as LTE to support the relentless growth in mobile data demand, the need for strategically positioned pico-sized cellular base stations known as 'pico-cells' are gaining traction. In addition to having to design a transceiver in a much compact footprint, pico-cells must still face the technical challenges presented by the new 4G systems, such as reduced power consumptions and linear amplification of the signals. The RF power amplifier (PA) that amplifies the output signals of 4G pico-cell systems face challenges to minimize size, achieve high average efficiencies and broader bandwidths while maintaining linearity and operating at higher frequencies. 4G standards as LTE use non-constant envelope modulation techniques with high peak to average ratios. Power amplifiers implemented in such applications are forced to operate at a backed off region from saturation. Therefore, in order to reduce power consumption, a design of a high efficiency PA that can maintain the efficiency for a wider range of radio frequency signals is required. The primary focus of this thesis is to enhance the efficiency of a compact RF amplifier suitable for a 4G pico-cell base station. For this aim, an integrated two way Doherty amplifier design in a compact 10mm x 11.5mm2 monolithic microwave integrated circuit using GaN device technology is presented. Using non-linear GaN HFETs models, the design achieves high effi-ciencies of over 50% at both back-off and peak power regions without compromising on the stringent linearity requirements of 4G LTE standards. This demonstrates a 17% increase in power added efficiency at 6 dB back off from peak power compared to conventional Class AB amplifier performance. Performance optimization techniques to select between high efficiency and high linearity operation are

  17. Mg doping of GaN by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Lieten, R R; Buchowicz, G; Dubon, O; Motsnyi, V; Zhang, L; Cheng, K; Leys, M; Degroote, S; Borghs, G

    2011-01-01

    We present a systematic study on the influence of growth conditions on the incorporation and activation of Mg in GaN layers grown by plasma-assisted molecular beam epitaxy. We show that high quality p-type GaN layers can be obtained on GaN-on-silicon templates. The Mg incorporation and the electrical properties have been investigated as a function of growth temperature, Ga : N flux ratio and Mg : Ga flux ratio. It was found that the incorporation of Mg and the electrical properties are highly sensitive to the Ga : N flux ratio. The highest hole mobility and lowest resistivity were achieved for slightly Ga-rich conditions. In addition to an optimal Ga : N ratio, an optimum Mg : Ga flux ratio was also observed at around 1%. We observed a clear Mg flux window for p-type doping of GaN : 0.31% 17 cm -3 and a mobility of 15 cm 2 V -1 s -1 . Temperature-dependent Hall effect measurements indicate an acceptor depth in these samples of 100 meV for a hole concentration of 5.5 x 10 17 cm -3 . The corresponding Mg concentration is 5 x 10 19 cm -3 , indicating approximately 1% activation at room temperature. In addition to continuous growth of Mg-doped GaN layers we also investigated different modulated growth procedures. We show that a modulated growth procedure has only limited influence on Mg doping at a growth temperature of 800 deg. or higher. This result is thus in contrast to previously reported GaN : Mg doping at much lower growth temperatures of 500 deg. C.

  18. Growth and characterization of Fe nanostructures on GaN

    International Nuclear Information System (INIS)

    Honda, Yuya; Hayakawa, Satoko; Hasegawa, Shigehiko; Asahi, Hajime

    2009-01-01

    We have investigated the growth of Fe nanostructures on GaN(0 0 0 1) substrates at room temperature using reflection high-energy electron diffraction (RHEED), scanning tunneling microscopy (STM), and superconducting quantum interference device magnetometer. Initially, a ring RHEED pattern appears, indicating the growth of polycrystalline α-Fe. At around 0.5 nm deposition, the surface displays a transmission pattern from α-Fe films with the epitaxial relationship of Fe(1 1 0)//GaN(0 0 0 1) and Fe[1 -1 1]//GaN[1 1 -2 0] (Kurdjumov-Sachs (KS) orientational relationship). Further deposition to 1 nm results in the appearance of a new spot pattern together with the pattern from domains with the KS orientation relationship. The newly observed pattern shows that Fe layers are formed with the epitaxial relationship of Fe(1 1 0)//GaN(0 0 0 1) and Fe[0 0 1]//GaN[1 1 -2 0] (Nishiyama-Wasserman (NW) orientational relationship). From STM images for Fe layers with the KS and NW orientational relationships, it can be seen that Fe layers with the KS relationship consist of round-shaped Fe nanodots with below 7 nm in average diameter. These nanodots coalesce to form nanodots elongating along the Fe[1 0 0] direction, and they have the KS orientational relationship. Elongated Fe nanodots with the NW relationship show ferromagnetism while round-shaped Fe nanodots with the KS relationship show super-paramagnetic behavior. We will discuss their magnetic properties in connection with the change in crystalline configurations of nanodots.

  19. Photoluminescence of Mg-doped m-plane GaN grown by MOCVD on bulk GaN substrates

    Energy Technology Data Exchange (ETDEWEB)

    Monemar, Bo [Department of Physics, Chemistry and Biology, Linkoeping University, 581 83 Linkoeping (Sweden); Solid State Physics-The Nanometer Structure Consortium, Lund University, Box 118, 221 00 Lund (Sweden); Paskov, Plamen; Pozina, Galia; Hemmingsson, Carl; Bergman, Peder [Department of Physics, Chemistry and Biology, Linkoeping University, 581 83 Linkoeping (Sweden); Lindgren, David; Samuelson, Lars [Solid State Physics-The Nanometer Structure Consortium, Lund University, Box 118, 221 00 Lund (Sweden); Ni, Xianfeng; Morkoc, Hadis [Department of Electrical and Computer Engineering, Virginia Commonwealth University, Richmond, Virginia 23284-3072 (United States); Paskova, Tanya [Kyma Technologies Inc., Raleigh, North Carolina 27617 (United States); Bi, Zhaoxia; Ohlsson, Jonas [Glo AB, Ideon Science Park, Scheelevaegen 17, 223 70 Lund (Sweden)

    2011-07-15

    Photoluminescence (PL) properties are reported for a set of m-plane GaN films with Mg doping varied from mid 10{sup 18} cm{sup -3} to above 10{sup 20} cm{sup -3}. The samples were grown with MOCVD at reduced pressure on low defect density bulk GaN templates. The sharp line near bandgap bound exciton (BE) spectra observed below 50 K, as well as the broader donor-acceptor pair (DAP) PL bands at 2.9-3.3 eV give evidence of several Mg related acceptors, similar to the case of c-plane GaN. The dependence of the BE spectra on excitation intensity as well as the transient decay behaviour demonstrate acoustic phonon assisted transfer between the acceptor BE states. The lower energy donor-acceptor pair spectra suggest the presence of deep acceptors, in addition to the two main shallower ones at about 0.23 eV. Similar spectra from Mg-doped GaN nanowires (NWs) grown by MOCVD are also briefly discussed. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  20. Large electron capture-cross-section of the major nonradiative recombination centers in Mg-doped GaN epilayers grown on a GaN substrate

    Science.gov (United States)

    Chichibu, S. F.; Shima, K.; Kojima, K.; Takashima, S.; Edo, M.; Ueno, K.; Ishibashi, S.; Uedono, A.

    2018-05-01

    Complementary time-resolved photoluminescence and positron annihilation measurements were carried out at room temperature on Mg-doped p-type GaN homoepitaxial films for identifying the origin and estimating the electron capture-cross-section ( σ n ) of the major nonradiative recombination centers (NRCs). To eliminate any influence by threading dislocations, free-standing GaN substrates were used. In Mg-doped p-type GaN, defect complexes composed of a Ga-vacancy (VGa) and multiple N-vacancies (VNs), namely, VGa(VN)2 [or even VGa(VN)3], are identified as the major intrinsic NRCs. Different from the case of 4H-SiC, atomic structures of intrinsic NRCs in p-type and n-type GaN are different: VGaVN divacancies are the major NRCs in n-type GaN. The σ n value approximately the middle of 10-13 cm2 is obtained for VGa(VN)n, which is larger than the hole capture-cross-section (σp = 7 × 10-14 cm2) of VGaVN in n-type GaN. Combined with larger thermal velocity of an electron, minority carrier lifetime in Mg-doped GaN becomes much shorter than that of n-type GaN.

  1. A system for biasing a differential amplifier

    International Nuclear Information System (INIS)

    Barbier, Daniel; Ittel, J.M.; Poujois, Robert

    1975-01-01

    This invention concerns a system for biasing a differential amplifier. It particularly applies to the integrated differential amplifiers designed with MOS field effect transistors. Variations in the technological parameters may well cause the amplifying transistors to work outside their usual operational area, in other words outside the linear part of the transfer characteristic. To ensure that these transistors function correctly, it is necessary that the value of the voltage difference at the output be equally null. To do this and to centre on the so called 'rest' point of the amplifier transfer charateristic, the condition will be set that the output potentials of each amplifier transistor should have a zero value or a constant value as sum. With this in view, the bias on the source (generally a transistor powered by its grid bias voltage) supplying current to the two amplifying transistors fitted in parallel, is permanently adjusted in a suitable manner [fr

  2. Semipolar InGaN quantum-well laser diode with integrated amplifier for visible light communications

    KAUST Repository

    Shen, Chao

    2018-02-14

    GaN-based semiconductor optical amplifier (SOA) and its integration with laser diode (LD) is an essential building block yet to be demonstrated for III-nitride photonic integrated circuits (PICs) at visible wavelength. This paper presents the InGaN/GaN quantum well (QW) based dual-section LD consisting of integrated amplifier and laser gain regions fabricated on a semipolar GaN substrate. The threshold current in the laser gain region was favorably reduced from 229mA to 135mA at SOA driving voltages, VSOA, of 0V and 6.25V, respectively. The amplification effect was measured based on a large gain of 5.7 dB at VSOA = 6.25V from the increased optical output power of 8.2 mW to 30.5 mW. Such integrated amplifier can be modulated to achieve Gbps data communication using on-off keying technique. The monolithically integrated amplifier-LD paves the way towards the III-nitride on-chip photonic system, providing a compact, low-cost, and multi-functional solution for applications such as smart lighting and visible light communications.

  3. Semipolar InGaN quantum-well laser diode with integrated amplifier for visible light communications

    KAUST Repository

    Shen, Chao; Ng, Tien Khee; Lee, Changmin; Nakamura, Shuji; Speck, James S.; DenBaars, Steven P.; Alyamani, Ahmed Y.; El-Desouki, Munir M.; Ooi, Boon S.

    2018-01-01

    GaN-based semiconductor optical amplifier (SOA) and its integration with laser diode (LD) is an essential building block yet to be demonstrated for III-nitride photonic integrated circuits (PICs) at visible wavelength. This paper presents the InGaN/GaN quantum well (QW) based dual-section LD consisting of integrated amplifier and laser gain regions fabricated on a semipolar GaN substrate. The threshold current in the laser gain region was favorably reduced from 229mA to 135mA at SOA driving voltages, VSOA, of 0V and 6.25V, respectively. The amplification effect was measured based on a large gain of 5.7 dB at VSOA = 6.25V from the increased optical output power of 8.2 mW to 30.5 mW. Such integrated amplifier can be modulated to achieve Gbps data communication using on-off keying technique. The monolithically integrated amplifier-LD paves the way towards the III-nitride on-chip photonic system, providing a compact, low-cost, and multi-functional solution for applications such as smart lighting and visible light communications.

  4. Schottky contacts to polar and nonpolar n-type GaN

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Hogyoung [Hanbat National University, Daejeon (Korea, Republic of); Phark, Soohyon [Max-Planck-Institut fur Mikrostrukturphysik, Halle (Germany); Song, Keunman [Korea Advanced Nano Fab Center, Suwon (Korea, Republic of); Kim, Dongwook [Ewha Woman' s University, Seoul (Korea, Republic of)

    2012-01-15

    Using the current-voltage measurements, we observed the barrier heights of c-plane GaN in Pt and Au Schottky contacts to be higher than those of a-plane GaN. However, the barrier height of c-plane GaN was lower than that of a-plane GaN in the Ti Schottky contacts. The N/Ga ratio calculated by integrating the X-ray photoelectron spectroscopy (XPS) spectra of Ga 3d and N 1s core levels showed that c-plane GaN induced more Ga vacancies near the interface than a-plane GaN in the Ti Schottky contacts, reducing the effective barrier height through an enhancement of the tunneling probability.

  5. Chemical lift-off of (11-22) semipolar GaN using periodic triangular cavities

    Science.gov (United States)

    Jeon, Dae-Woo; Lee, Seung-Jae; Jeong, Tak; Baek, Jong Hyeob; Park, Jae-Woo; Jang, Lee-Woon; Kim, Myoung; Lee, In-Hwan; Ju, Jin-Woo

    2012-01-01

    Chemical lift-off of (11-22) semipolar GaN using triangular cavities was investigated. The (11-22) semipolar GaN was grown using epitaxial lateral overgrowth by metal-organic chemical vapor deposition on m-plane sapphire, in such a way as to keep N terminated surface of c-plane GaN exposed in the cavities. After regrowing 300 μm thick (11-22) semipolar GaN by hydride vapor phase epitaxy for a free-standing (11-22) semipolar GaN substrate, the triangular cavities of the templates were chemically etched in molten KOH. The (000-2) plane in the triangular cavities can be etched in the [0002] direction with the high lateral etching rate of 196 μm/min. The resulting free-standing (11-22) semipolar GaN substrate was confirmed to be strain-free by the Raman analysis.

  6. Red shift of near band edge emission in cerium implanted GaN

    International Nuclear Information System (INIS)

    Majid, Abdul; Ali, Akbar

    2009-01-01

    Rare earth (RE) doping in GaN is a promising technology to control the optical properties. However, there are no reports on doping of cerium (Ce) into GaN, which is a very unique RE element. In this paper, we performed photoluminescence (PL) and optical transmission measurements on Ce-doped GaN for the first time. A significant red shift of about 120 meV was observed in the PL peak position of the donor bound excitons. This red shift of near band emission was corroborated by the red shift of the absorption edge related to GaN in the optical transmission measurements. This observation is attributed to the band gap narrowing in GaN heavily doped with Ce. The activation energy of the Ce-related shallow donor is found to be 21.9 meV in GaN.

  7. Understanding the Room Temperature Ferromagnetism in GaN Nanowires with Pd Doping

    International Nuclear Information System (INIS)

    Manna, S; De, S K

    2011-01-01

    We report the first synthesis and characterization of 4d transition metal palladium-doped GaN nanowires (NWs). Room temperature ferromagnetism has been observed in high quality Vapor Liquid Solid (VLS) epitaxy grown undoped n-type GaN nanowires. It was proposed that this type of magnetism is due to defects which are not observed in Bulk GaN because of large formation energy of defects in bulk GaN. Here we have successfully doped 4d transition metal Pd in GaN NWs. We find fairly strong and long-range ferromagnetic coupling between Pd substituted for Ga in GaN . The results suggest that 4d metals such as Pd may also be considered as candidates for ferromagnetic dopants in semiconductors.

  8. Red shift of near band edge emission in cerium implanted GaN

    Energy Technology Data Exchange (ETDEWEB)

    Majid, Abdul; Ali, Akbar, E-mail: abdulmajid40@yahoo.co, E-mail: akbar@qau.edu.p [Advance Materials Physics Laboratory, Physics Department, Quaid-i-Azam University, Islamabad (Pakistan)

    2009-02-21

    Rare earth (RE) doping in GaN is a promising technology to control the optical properties. However, there are no reports on doping of cerium (Ce) into GaN, which is a very unique RE element. In this paper, we performed photoluminescence (PL) and optical transmission measurements on Ce-doped GaN for the first time. A significant red shift of about 120 meV was observed in the PL peak position of the donor bound excitons. This red shift of near band emission was corroborated by the red shift of the absorption edge related to GaN in the optical transmission measurements. This observation is attributed to the band gap narrowing in GaN heavily doped with Ce. The activation energy of the Ce-related shallow donor is found to be 21.9 meV in GaN.

  9. Growth of GaN micro/nanolaser arrays by chemical vapor deposition.

    Science.gov (United States)

    Liu, Haitao; Zhang, Hanlu; Dong, Lin; Zhang, Yingjiu; Pan, Caofeng

    2016-09-02

    Optically pumped ultraviolet lasing at room temperature based on GaN microwire arrays with Fabry-Perot cavities is demonstrated. GaN microwires have been grown perpendicularly on c-GaN/sapphire substrates through simple catalyst-free chemical vapor deposition. The GaN microwires are [0001] oriented single-crystal structures with hexagonal cross sections, each with a diameter of ∼1 μm and a length of ∼15 μm. A possible growth mechanism of the vertical GaN microwire arrays is proposed. Furthermore, we report room-temperature lasing in optically pumped GaN microwire arrays based on the Fabry-Perot cavity. Photoluminescence spectra exhibit lasing typically at 372 nm with an excitation threshold of 410 kW cm(-2). The result indicates that these aligned GaN microwire arrays may offer promising prospects for ultraviolet-emitting micro/nanodevices.

  10. Enhanced Gain in Photonic Crystal Amplifiers

    DEFF Research Database (Denmark)

    Ek, Sara; Semenova, Elizaveta; Hansen, Per Lunnemann

    2012-01-01

    We experimentally demonstrate enhanced gain in the slow-light regime of quantum well photonic crystal amplifiers. A strong gain enhancement is observed with the increase of the group refractive index, due to light slow-down. The slow light enhancement is shown in a amplified spontaneous emission....... These results are promising for short and efficient semiconductor optical amplifiers. This effect will also benefit other devices, such as mode locked lasers....

  11. Very broad bandwidth klystron amplifiers

    Science.gov (United States)

    Faillon, G.; Egloff, G.; Farvet, C.

    Large surveillance radars use transmitters at peak power levels of around one MW and average levels of a few kW, and possibly several tens of kW, in S band, or even C band. In general, the amplification stage of these transmitters is a microwave power tube, frequently a klystron. Although designers often turn to klystrons because of their good peak and average power capabilities, they still see them as narrow band amplifiers, undoubtedly because of their resonant cavities which, at first sight, would seem highly selective. But, with the progress of recent years, it has now become quite feasible to use these tubes in installations requiring bandwidths in excess of 10 - 12 percent, and even 15 percent, at 1 MW peak for example, in S-band.

  12. Hydraulically amplified PZT mems actuator

    Science.gov (United States)

    Miles, Robin R.

    2004-11-02

    A hydraulically amplified microelectromechanical systems actuator. A piece of piezoelectric material or stacked piezo bimorph is bonded or deposited as a thin film. The piece is operatively connected to a primary membrane. A reservoir is operatively connected to the primary membrane. The reservoir contains a fluid. A membrane is operatively connected to the reservoir. In operation, energizing the piezoelectric material causing the piezoelectric material to bow. Bowing of the piezoelectric material causes movement of the primary membrane. Movement of the primary membrane results in a force in being transmitted to the liquid in the reservoir. The force in the liquid causes movement of the membrane. Movement of the membrane results in an operating actuator.

  13. Transverse pumped laser amplifier architecture

    Science.gov (United States)

    Bayramian, Andrew James; Manes, Kenneth; Deri, Robert; Erlandson, Al; Caird, John; Spaeth, Mary

    2013-07-09

    An optical gain architecture includes a pump source and a pump aperture. The architecture also includes a gain region including a gain element operable to amplify light at a laser wavelength. The gain region is characterized by a first side intersecting an optical path, a second side opposing the first side, a third side adjacent the first and second sides, and a fourth side opposing the third side. The architecture further includes a dichroic section disposed between the pump aperture and the first side of the gain region. The dichroic section is characterized by low reflectance at a pump wavelength and high reflectance at the laser wavelength. The architecture additionally includes a first cladding section proximate to the third side of the gain region and a second cladding section proximate to the fourth side of the gain region.

  14. Design of an 1800nm Raman amplifier

    DEFF Research Database (Denmark)

    Svane, Ask Sebastian; Rottwitt, Karsten

    2013-01-01

    We present the experimental results for a Raman amplifier that operates at 1810 nm and is pumped by a Raman fiber laser at 1680 nm. Both the pump laser and the Raman amplifier is polarization maintaining. A challenge when scaling Raman amplifiers to longer wavelengths is the increase...... in transmission loss, but also the reduction in the Raman gain coefficient as the amplifier wavelength is increased. Both polarization components of the Raman gain is characterized, initially for linearly co-polarized signal and pump, subsequently linearly polarized orthogonal signal and pump. The noise...

  15. Reflection amplifiers in self-regulated learning

    NARCIS (Netherlands)

    Verpoorten, Dominique

    2012-01-01

    Verpoorten, D. (2012). Reflection amplifiers in self-regulated learning. Doctoral thesis. November, 9, 2012, Heerlen, The Netherlands: Open Universiteit (CELSTEC). Datawyse / Universitaire Pers Maastricht.

  16. Vertical GaN Devices for Power Electronics in Extreme Environments

    Science.gov (United States)

    2016-03-31

    Vertical GaN Devices for Power Electronics in Extreme Environments Isik C. Kizilyalli (1), Robert J. Kaplar (2), O. Aktas (1), A. M. Armstrong (2...electronics applications. In this paper vertical p-n diodes and transistors fabricated on pseudo bulk low defect density (104 to 106 cm-2) GaN substrates are...discussed. Homoepitaxial MOCVD growth of GaN on its native substrate and being able to control doping has allowed the realization of vertical

  17. Thermal Annealing induced relaxation of compressive strain in porous GaN structures

    KAUST Repository

    Ben Slimane, Ahmed

    2012-01-01

    The effect of annealing on strain relaxation in porous GaN fabricated using electroless chemical etching is presented. The Raman shift of 1 cm-1 in phonon frequency of annealed porous GaN with respect to as-grown GaN corresponds to a relaxation of compressive strain by 0.41 ± 0.04 GPa. The strain relief promises a marked reduction in threading dislocation for subsequent epitaxial growth.

  18. Integrated GaN photonic circuits on silicon (100) for second harmonic generation

    OpenAIRE

    Xiong, Chi; Pernice, Wolfram; Ryu, Kevin K.; Schuck, Carsten; Fong, King Y.; Palacios, Tomas; Tang, Hong X.

    2014-01-01

    We demonstrate second order optical nonlinearity in a silicon architecture through heterogeneous integration of single-crystalline gallium nitride (GaN) on silicon (100) substrates. By engineering GaN microrings for dual resonance around 1560 nm and 780 nm, we achieve efficient, tunable second harmonic generation at 780 nm. The \\{chi}(2) nonlinear susceptibility is measured to be as high as 16 plus minus 7 pm/V. Because GaN has a wideband transparency window covering ultraviolet, visible and ...

  19. Lateral epitaxial overgrowth of GaN on a patterned GaN-on-silicon substrate by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Wang, Yongjin; Hu, Fangren; Hane, Kazuhiro

    2011-01-01

    We report here the lateral epitaxial overgrowth (LEO) of GaN on a patterned GaN-on-silicon substrate by molecular beam epitaxy (MBE) growth with radio frequency nitrogen plasma as a gas source. Two kinds of GaN nanostructures are defined by electron beam lithography and realized on a GaN substrate by fast atom beam etching. The epitaxial growth of GaN by MBE is performed on the prepared GaN template, and the selective growth of GaN takes place with the assistance of GaN nanostructures. The LEO of GaN produces novel GaN epitaxial structures which are dependent on the shape and the size of the processed GaN nanostructures. Periodic GaN hexagonal pyramids are generated inside the air holes, and GaN epitaxial strips with triangular section are formed in the grating region. This work provides a promising way for producing novel GaN-based devices by the LEO of GaN using the MBE technique

  20. Mechanical, Thermodynamic and Electronic Properties of Wurtzite and Zinc-Blende GaN Crystals

    Science.gov (United States)

    Luan, Xinghe; Feng, Chuang; Yang, Daoguo; Zhang, Guoqi

    2017-01-01

    For the limitation of experimental methods in crystal characterization, in this study, the mechanical, thermodynamic and electronic properties of wurtzite and zinc-blende GaN crystals were investigated by first-principles calculations based on density functional theory. Firstly, bulk moduli, shear moduli, elastic moduli and Poisson’s ratios of the two GaN polycrystals were calculated using Voigt and Hill approximations, and the results show wurtzite GaN has larger shear and elastic moduli and exhibits more obvious brittleness. Moreover, both wurtzite and zinc-blende GaN monocrystals present obvious mechanical anisotropic behavior. For wurtzite GaN monocrystal, the maximum and minimum elastic moduli are located at orientations [001] and , respectively, while they are in the orientations and for zinc-blende GaN monocrystal, respectively. Compared to the elastic modulus, the shear moduli of the two GaN monocrystals have completely opposite direction dependences. However, different from elastic and shear moduli, the bulk moduli of the two monocrystals are nearly isotropic, especially for the zinc-blende GaN. Besides, in the wurtzite GaN, Poisson’s ratios at the planes containing [001] axis are anisotropic, and the maximum value is 0.31 which is located at the directions vertical to [001] axis. For zinc-blende GaN, Poisson’s ratios at planes (100) and (111) are isotropic, while the Poisson’s ratio at plane (110) exhibits dramatically anisotropic phenomenon. Additionally, the calculated Debye temperatures of wurtzite and zinc-blende GaN are 641.8 and 620.2 K, respectively. At 300 K, the calculated heat capacities of wurtzite and zinc-blende are 33.6 and 33.5 J mol−1 K−1, respectively. Finally, the band gap is located at the G point for the two crystals, and the band gaps of wurtzite and zinc-blende GaN are 3.62 eV and 3.06 eV, respectively. At the G point, the lowest energy of conduction band in the wurtzite GaN is larger, resulting in a wider band gap

  1. High surface hole concentration p-type GaN using Mg implantation

    CERN Document Server

    Long Tao; Zhang Guo Yi

    2001-01-01

    Mg ions were implanted on Mg-doped GaN grown by metalorganic chemical vapor deposition (MOCVD). The p-type GaN was achieved with high hole concentration (8.28 x 10 sup 1 sup 7 cm sup - sup 3) conformed by Van derpauw Hall measurement after annealing at 800 degree C for 1 h. this is the first experimental report of Mg implantation on Mg-doped GaN and achieving p-type GaN with high surface hole concentration

  2. Optical properties of Mg doped p-type GaN nanowires

    Science.gov (United States)

    Patsha, Avinash; Pandian, Ramanathaswamy; Dhara, S.; Tyagi, A. K.

    2015-06-01

    Mg doped p-type GaN nanowires are grown using chemical vapor deposition technique in vapor-liquid-solid (VLS) process. Morphological and structural studies confirm the VLS growth process of nanowires and wurtzite phase of GaN. We report the optical properties of Mg doped p-type GaN nanowires. Low temperature photoluminescence studies on as-grown and post-growth annealed samples reveal the successful incorporation of Mg dopants. The as-grwon and annealed samples show passivation and activation of Mg dopants, respectively, in GaN nanowires.

  3. The feasibility of tunable p-type Mg doping in a GaN monolayer nanosheet

    International Nuclear Information System (INIS)

    Xia, Congxin; Peng, Yuting; Wei, Shuyi; Jia, Yu

    2013-01-01

    Based on density functional theory, the electronic structures, formation energy and transition energy level of a p-type Mg-doped GaN nanosheet are investigated. Numerical results show that the transition energy level decreases monotonously with increasing Mg doping concentration in Mg-doped GaN nanosheet systems, which is lower than that of the Mg-doped bulk GaN case. Moreover, the formation energy calculations indicate that Mg-doped GaN nanosheet structures can be realized under N-rich experimental growth conditions

  4. Mechanical, Thermodynamic and Electronic Properties of Wurtzite and Zinc-Blende GaN Crystals

    Directory of Open Access Journals (Sweden)

    Hongbo Qin

    2017-12-01

    Full Text Available For the limitation of experimental methods in crystal characterization, in this study, the mechanical, thermodynamic and electronic properties of wurtzite and zinc-blende GaN crystals were investigated by first-principles calculations based on density functional theory. Firstly, bulk moduli, shear moduli, elastic moduli and Poisson’s ratios of the two GaN polycrystals were calculated using Voigt and Hill approximations, and the results show wurtzite GaN has larger shear and elastic moduli and exhibits more obvious brittleness. Moreover, both wurtzite and zinc-blende GaN monocrystals present obvious mechanical anisotropic behavior. For wurtzite GaN monocrystal, the maximum and minimum elastic moduli are located at orientations [001] and <111>, respectively, while they are in the orientations <111> and <100> for zinc-blende GaN monocrystal, respectively. Compared to the elastic modulus, the shear moduli of the two GaN monocrystals have completely opposite direction dependences. However, different from elastic and shear moduli, the bulk moduli of the two monocrystals are nearly isotropic, especially for the zinc-blende GaN. Besides, in the wurtzite GaN, Poisson’s ratios at the planes containing [001] axis are anisotropic, and the maximum value is 0.31 which is located at the directions vertical to [001] axis. For zinc-blende GaN, Poisson’s ratios at planes (100 and (111 are isotropic, while the Poisson’s ratio at plane (110 exhibits dramatically anisotropic phenomenon. Additionally, the calculated Debye temperatures of wurtzite and zinc-blende GaN are 641.8 and 620.2 K, respectively. At 300 K, the calculated heat capacities of wurtzite and zinc-blende are 33.6 and 33.5 J mol−1 K−1, respectively. Finally, the band gap is located at the G point for the two crystals, and the band gaps of wurtzite and zinc-blende GaN are 3.62 eV and 3.06 eV, respectively. At the G point, the lowest energy of conduction band in the wurtzite GaN is larger

  5. Direct growth of freestanding GaN on C-face SiC by HVPE.

    Science.gov (United States)

    Tian, Yuan; Shao, Yongliang; Wu, Yongzhong; Hao, Xiaopeng; Zhang, Lei; Dai, Yuanbin; Huo, Qin

    2015-06-02

    In this work, high quality GaN crystal was successfully grown on C-face 6H-SiC by HVPE using a two steps growth process. Due to the small interaction stress between the GaN and the SiC substrate, the GaN was self-separated from the SiC substrate even with a small thickness of about 100 μm. Moreover, the SiC substrate was excellent without damage after the whole process so that it can be repeatedly used in the GaN growth. Hot phosphoric acid etching (at 240 °C for 30 min) was employed to identify the polarity of the GaN layer. According to the etching results, the obtained layer was Ga-polar GaN. High-resolution X-ray diffraction (HRXRD) and electron backscatter diffraction (EBSD) were done to characterize the quality of the freestanding GaN. The Raman measurements showed that the freestanding GaN film grown on the C-face 6H-SiC was stress-free. The optical properties of the freestanding GaN layer were determined by photoluminescence (PL) spectra.

  6. Mechanical, Thermodynamic and Electronic Properties of Wurtzite and Zinc-Blende GaN Crystals.

    Science.gov (United States)

    Qin, Hongbo; Luan, Xinghe; Feng, Chuang; Yang, Daoguo; Zhang, Guoqi

    2017-12-12

    For the limitation of experimental methods in crystal characterization, in this study, the mechanical, thermodynamic and electronic properties of wurtzite and zinc-blende GaN crystals were investigated by first-principles calculations based on density functional theory. Firstly, bulk moduli, shear moduli, elastic moduli and Poisson's ratios of the two GaN polycrystals were calculated using Voigt and Hill approximations, and the results show wurtzite GaN has larger shear and elastic moduli and exhibits more obvious brittleness. Moreover, both wurtzite and zinc-blende GaN monocrystals present obvious mechanical anisotropic behavior. For wurtzite GaN monocrystal, the maximum and minimum elastic moduli are located at orientations [001] and , respectively, while they are in the orientations and for zinc-blende GaN monocrystal, respectively. Compared to the elastic modulus, the shear moduli of the two GaN monocrystals have completely opposite direction dependences. However, different from elastic and shear moduli, the bulk moduli of the two monocrystals are nearly isotropic, especially for the zinc-blende GaN. Besides, in the wurtzite GaN, Poisson's ratios at the planes containing [001] axis are anisotropic, and the maximum value is 0.31 which is located at the directions vertical to [001] axis. For zinc-blende GaN, Poisson's ratios at planes (100) and (111) are isotropic, while the Poisson's ratio at plane (110) exhibits dramatically anisotropic phenomenon. Additionally, the calculated Debye temperatures of wurtzite and zinc-blende GaN are 641.8 and 620.2 K, respectively. At 300 K, the calculated heat capacities of wurtzite and zinc-blende are 33.6 and 33.5 J mol -1 K -1 , respectively. Finally, the band gap is located at the G point for the two crystals, and the band gaps of wurtzite and zinc-blende GaN are 3.62 eV and 3.06 eV, respectively. At the G point, the lowest energy of conduction band in the wurtzite GaN is larger, resulting in a wider band gap. Densities of

  7. Dislocation-induced nanoparticle decoration on a GaN nanowire.

    Science.gov (United States)

    Yang, Bing; Yuan, Fang; Liu, Qingyun; Huang, Nan; Qiu, Jianhang; Staedler, Thorsten; Liu, Baodan; Jiang, Xin

    2015-02-04

    GaN nanowires with homoepitaxial decorated GaN nanoparticles on their surface along the radial direction have been synthesized by means of a chemical vapor deposition method. The growth of GaN nanowires is catalyzed by Au particles via the vapor-liquid-solid (VLS) mechanism. Screw dislocations are generated along the radial direction of the nanowires under slight Zn doping. In contrast to the metal-catalyst-assisted VLS growth, GaN nanoparticles are found to prefer to nucleate and grow at these dislocation sites. High-resolution transmission electron microscopy (HRTEM) analysis demonstrates that the GaN nanoparticles possess two types of epitaxial orientation with respect to the corresponding GaN nanowire: (I) [1̅21̅0]np//[1̅21̅0]nw, (0001)np//(0001)nw; (II) [1̅21̅3]np//[12̅10]nw, (101̅0)np//(101̅0)nw. An increased Ga signal in the energy-dispersive spectroscopy (EDS) profile lines of the nanowires suggests GaN nanoparticle growth at the edge surface of the wires. All the crystallographic results confirm the importance of the dislocations with respect to the homoepitaxial growth of the GaN nanoparticles. Here, screw dislocations situated on the (0001) plane provide the self-step source to enable nucleation of the GaN nanoparticles.

  8. Synthesis and Raman scattering of GaN nanorings, nanoribbons and nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Li, Z.J. [Academia Sinica, Beijing, BJ (China). Inst. of Physics; Northwestern Polytechnical Univ., Xian, SN (China). Dept. of Materials Science and Engineering; Chen, X.L.; Tu, Q.Y.; Yang, Z.; Xu, Y.P.; Hu, B.Q. [Academia Sinica, Beijing, BJ (China). Inst. of Physics; Li, H.J. [Northwestern Polytechnical Univ., Xian, SN (China). Dept. of Materials Science and Engineering

    2001-05-01

    Low-dimensional GaN materials, including nanorings, nanoribbons and smooth nanowires have been synthesized by reacting gallium and ammonia using Ag particles as a catalyst on the substrate of MgO single crystals. They were characterized by field emission scanning electron microscopy (FE-SEM), energy dispersive X-ray spectroscopy (EDX) and X-ray diffraction (XRD). EDX, XRD indicated that the low-dimensional nanomaterials were wurtzite GaN. New features are found in Raman scatterings for these low-dimensional GaN materials, which are different from the previous observations of GaN materials. (orig.)

  9. Optical and field emission properties of layer-structure GaN nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Cui, Zhen [Science School, Xi’an University of Technology, Xi’an 710048 (China); School of automation and Information Engineering, Xi’an University of Technology, Xi’an 710048 (China); Li, Enling, E-mail: Lienling@xaut.edu.cn [Science School, Xi’an University of Technology, Xi’an 710048 (China); Shi, Wei; Ma, Deming [Science School, Xi’an University of Technology, Xi’an 710048 (China)

    2014-08-15

    Highlights: • The layer-structure GaN nanowires with hexagonal-shaped cross-sections are produced via a process based on the CVD method. • The diameter of the layer-structure GaN nanowire gradually decreases from ∼500 nm to ∼200 nm along the wire axis. • The layer-structure GaN nanowire film possesses good field emission property. - Abstract: A layer-structure gallium nitride (GaN) nanowires, grown on Pt-coated n-type Si (1 1 1) substrate, have been synthesized using chemical vapor deposition (CVD). The results show: (1) SEM indicates that the geometry structure is layer-structure. HRTEM indicates that GaN nanowire’s preferential growth direction is along [0 0 1] direction. (2) The room temperature PL emission spectrum of the layer-structure GaN nanowires has a peak at 375 nm, which proves that GaN nanowires have potential application in light-emitting nano-devices. (3) Field-emission measurements show that the layer-structure GaN nanowires film has a low turn-on field of 4.39 V/μm (at room temperature), which is sufficient for electron emission devices, field emission displays and vacuum nano-electronic devices. The growth mechanism for GaN nanowires has also been discussed briefly.

  10. Conceptual design of GaN betavoltaic battery using in cardiac pacemaker

    International Nuclear Information System (INIS)

    Mohamadian, M.; Feghhi, S.A. H.; Afarideh, H.

    2007-01-01

    Introduction: Pacemaker is an electronic biomedical device which stimulates and regulates or amplify the human heartbeat by delivering weak electrical pulses to the cardiac muscle at regular intervals when its natural regulating mechanisms break down. Developments in design and implementation of power source in adjacent to advances in electronic circuitry is an important aspect in optimization of pacemakers. For instance, many implant patients continue to outlive their batteries and require costly and risky replacement surgery. So such device needs to have high energy density power source and maintain a stable current and voltage for a long period of time to avoid frequent replacements. In addition, the size is also an important consideration for implantable batteries. Betavoltaic batteries are being researched as a suitable source for these applications. Also, these batteries have vast application in which the replacement of batteries is highly inconvenient, such as in oil and mining industries, which often place sensors in dangerous or hard-to-reach locations. The purpose of the present investigation is determination of the optimal parameters of low energy GaN betavoltaic battery in artificial cardiac pacemakers using MCNP code which have higher efficiency than those available with previous devices, especially thermoelectric converters (∼15%). Material and Methods: In this design, two p-n diode structures from GaN semiconductor were used to collect the charge from a layer of 6 3Ni as a source which is centered between the two p-n junctions. MCNP simulation results have been used to determine the amount of electron current from interaction of beta particles in p-n junctions. Results and Discussion: Calculation results indicate that the short circuit current, open circuit voltage and efficiency of a single device are 1.1 μA/cm 2 , 2.7 volt and 25%, respectively. Also, it's concluded that with suitable arrangement of these single devices, one could construct a

  11. Distributed feedback laser amplifiers combining the functions of amplifiers and channel filters

    DEFF Research Database (Denmark)

    Wang, Z.; Durhuus, T.; Mikkelsen, Benny

    1994-01-01

    A dynamic model for distributed feedback amplifiers, including the mode coupled equations and the carrier rate equation, is established. The presented mode coupled equations have taken into account the interaction between fast changing optical signal and the waveguide with corrugations. By showin...... the possibility of amplifying 100 ps pulses without pulse broadening, we anticipate that a distributed feedback amplifier can be used as a combined amplifier and channel filter in high bit rate transmission systems....

  12. Site-selective spectroscopy of Er in GaN

    International Nuclear Information System (INIS)

    Dierolf, V.; Sandmann, C.; Zavada, J.; Chow, P.; Hertog, B.

    2004-01-01

    We investigated different Er 3+ defect sites found in Er-doped GaN layers by site-selective combined excitation-emission spectroscopy and studied the role of these sites in different direct and multistep excitation schemes. The layers were grown by molecular beam epitaxy and were 200 nm thick. Two majority sites were found along with several minority sites. The sites strongly differ in excitation and energy transfer efficiencies as well as branching ratios during relaxation. For this reason, relative emission intensities from these sites depend strongly on emission and excitation. The sites were identified for several transitions and a comprehensive list of energy levels has been compiled. One of the minority sites appears strongly under ultraviolet excitation above the GaN band gap suggesting that this site is an excellent trap for excitation energy of electron-hole pairs

  13. Study of Charge Carrier Transport in GaN Sensors

    Science.gov (United States)

    Gaubas, Eugenijus; Ceponis, Tomas; Kuokstis, Edmundas; Meskauskaite, Dovile; Pavlov, Jevgenij; Reklaitis, Ignas

    2016-01-01

    Capacitor and Schottky diode sensors were fabricated on GaN material grown by hydride vapor phase epitaxy and metal-organic chemical vapor deposition techniques using plasma etching and metal deposition. The operational characteristics of these devices have been investigated by profiling current transients and by comparing the experimental regimes of the perpendicular and parallel injection of excess carrier domains. Profiling of the carrier injection location allows for the separation of the bipolar and the monopolar charge drift components. Carrier mobility values attributed to the hydride vapor phase epitaxy (HVPE) GaN material have been estimated as μe = 1000 ± 200 cm2/Vs for electrons, and μh = 400 ± 80 cm2/Vs for holes, respectively. Current transients under injection of the localized and bulk packets of excess carriers have been examined in order to determine the surface charge formation and polarization effects. PMID:28773418

  14. Structural and Magnetic Properties of Sm Implanted GaN

    International Nuclear Information System (INIS)

    Li-Juan, Jiang; Xiao-Liang, Wang; Hong-Ling, Xiao; Zhan-Guo, Wang; Chun, Feng; Ming-Lan, Zhang; Jian, Tang

    2009-01-01

    The structural and magnetic properties of Sm ion-implanted GaN with different Sm concentrations are investigated. XRD results do not show any peaks associated with second phase formation. Magnetic investigations performed by superconducting quantum interference device reveal ferromagnetic behavior with an ordering temperature above room temperature in all the implanted samples, while the effective magnetic moment per Sm obtained from saturation magnetization gives a much higher value than the atomic moment of Sm. These results could be explained by the phenomenological model proposed by Dhar et al. [Phys. Rev. Lett. 94(2005)037205, Phys. Rev. B 72(2005)245203] in terms of a long-range spin polarization of the GaN matrix by the Sm atoms. (condensed matter: electronicstructure, electrical, magnetic, and opticalproperties)

  15. Electron beam irradiation effect on GaN HEMT

    International Nuclear Information System (INIS)

    Lou Yinhong; Guo Hongxia; Zhang Keying; Wang Yuanming; Zhang Fengqi

    2011-01-01

    In this work, GaN HEMTs (High Electron Mobility Transistor) were irradiated by 0.8 and 1.2 MeV electron beams, and the irradiation effects were investigated. The results show that the device damage caused by 0.8 MeV electrons is more serious than that by 1.2 MeV electrons. Saturation drain current increase and threshold voltage negative shift are due to trapped positive charge from ionization in the AlGaN layer and N, Ga vacancy from non-ionizing energy loss in the GaN layer. Electron traps and trapped positive charges from non-ionizing in the AlGaN layer act as trap-assisted-tunneling centers that increase the gate leakage current.(authors)

  16. Broadband 1.2- and 2.4-mm Gallium Nitride (GaN) Power Amplifier Designs

    Science.gov (United States)

    2017-10-01

    radio frequency communications, networking, and sensor systems of interest to Department of Defense applications, particularly for next-generation...output match (Fig. 18). This simple lossless combiner circuit would need to be modified to supply DC bias, and there are a several easy ways to modify

  17. Technology Development for 3-D Wide Swath Imaging Supporting ACE

    Science.gov (United States)

    Racette, Paul; Heymsfield, Gerry; Li, Lihua; Mclinden, Matthew; Park, Richard; Cooley, Michael; Stenger, Pete; Hand, Thomas

    2014-01-01

    detail specific requirements and trades for the Ka-band AESA line feed. As part of the third objective a subscale antenna, similar to the full-scale aperture design, was developed, integrated, and flown with the Cloud Radar System during the 2014 Integrated Precipitation and Hydrology Experiment. The fourth and ongoing objective entails developing a GaN MMIC (Gallium Nitride Monolithic Microwave Integrated Circuits) power amplifier for use in the Ka-band AESA. An overview of the progress made on this project and a look ahead at the 2013 IIP (Instrument Incubator Program) award selection will be presented.

  18. Room Temperature Ultralow Threshold GaN Nanowire Polariton Laser

    KAUST Repository

    Das, Ayan

    2011-08-01

    We report ultralow threshold polariton lasing from a single GaN nanowire strongly coupled to a large-area dielectric microcavity. The threshold carrier density is 3 orders of magnitude lower than that of photon lasing observed in the same device, and 2 orders of magnitude lower than any existing room-temperature polariton devices. Spectral, polarization, and coherence properties of the emission were measured to confirm polariton lasing. © 2011 American Physical Society.

  19. High sensitivity hydrogen sensors based on GaN

    Czech Academy of Sciences Publication Activity Database

    Yatskiv, Roman; Grym, Jan; Žďánský, Karel

    2012-01-01

    Roč. 7, č. 9 (2012), s. 1661-1663 ISSN 1610-1642. [16th International Semiconducting and Insulating Materials Conference (SIMC-XVI). Stockholm, 19.06.2011-23.06.2011] R&D Projects: GA MŠk(CZ) OC10021 Institutional support: RVO:67985882 Keywords : Pt nanoparticles * Graphite based Schottky diodes * Hydrogen sensor * GaN Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering

  20. Investigation on the Solubility of GaN in Supercritical Ammonia Containing Acidic, Neutral, and Some Basic Mineralizers

    National Research Council Canada - National Science Library

    Ehrentraut, Dirk

    2009-01-01

    ... material due to the superior structural quality over HVPE GaN. In order to hold up with the progress, not at least provide a scientific platform, the solubility of GaN in supercritical ammonia (NH3...

  1. Self-pulsation in Raman fiber amplifiers

    DEFF Research Database (Denmark)

    Pedersen, Martin Erland Vestergaard; Ott, Johan Raunkjær; Rottwitt, Karsten

    2009-01-01

    Dynamic behavior caused by Brillouin scattering in Raman fiber amplifiers is studied. Modes of self-pulsation steady state oscillations are found. Their dependence on amplification scheme is demonstrated.......Dynamic behavior caused by Brillouin scattering in Raman fiber amplifiers is studied. Modes of self-pulsation steady state oscillations are found. Their dependence on amplification scheme is demonstrated....

  2. Pulse amplifier with high 'common mode rejection'

    International Nuclear Information System (INIS)

    Ijlst, P.

    1987-01-01

    The input signal of a pulse amplifier contains large 'common-mode' signals which have to be suppressed. A transformer, especially constructed for this purpose, is described. It has been tried to optimize the signal to noise ratio of the pulse amplifier by means of noise analysis. (Auth.)

  3. BROADBAND TRAVELLING WAVE SEMICONDUCTOR OPTICAL AMPLIFIER

    DEFF Research Database (Denmark)

    2010-01-01

    Broadband travelling wave semiconductor optical amplifier (100, 200, 300, 400, 800) for amplification of light, wherein the amplifier (100, 200, 300, 400, 800) comprises a waveguide region (101, 201, 301, 401, 801) for providing confinement of the light in transverse directions and adapted...

  4. Bevalac injector final stage RF amplifier upgrades

    International Nuclear Information System (INIS)

    Howard, D.; Calvert, J.; Dwinell, R.; Lax, J.; Lindner, A.; Richter, R.; Ridgeway, W.

    1991-01-01

    With the assistance of the DOE In-house Energy Management Program, the Bevalac injector final stage RF amplifier systems have been successfully upgraded to reduce energy consumption and operating costs. This recently completed project removed the energy-inefficient plate voltage modulator circuits that were used in conjunction with the final stage RF amplifiers. Construction, design, and operating parameters are described in detail

  5. Method for reducing snap in magnetic amplifiers

    Science.gov (United States)

    Fischer, R. L. E.; Word, J. L.

    1968-01-01

    Method of reducing snap in magnetic amplifiers uses a degenerative feedback circuit consisting of a resistor and a separate winding on a magnetic core. The feedback circuit extends amplifier range by allowing it to be used at lower values of output current.

  6. Investigation on thermodynamics of ion-slicing of GaN and heterogeneously integrating high-quality GaN films on CMOS compatible Si(100) substrates.

    Science.gov (United States)

    Huang, Kai; Jia, Qi; You, Tiangui; Zhang, Runchun; Lin, Jiajie; Zhang, Shibin; Zhou, Min; Zhang, Bo; Yu, Wenjie; Ou, Xin; Wang, Xi

    2017-11-08

    Die-to-wafer heterogeneous integration of single-crystalline GaN film with CMOS compatible Si(100) substrate using the ion-cutting technique has been demonstrated. The thermodynamics of GaN surface blistering is in-situ investigated via a thermal-stage optical microscopy, which indicates that the large activation energy (2.5 eV) and low H ions utilization ratio (~6%) might result in the extremely high H fluence required for the ion-slicing of GaN. The crystalline quality, surface topography and the microstructure of the GaN films are characterized in detail. The full width at half maximum (FWHM) for GaN (002) X-ray rocking curves is as low as 163 arcsec, corresponding to a density of threading dislocation of 5 × 10 7  cm -2 . Different evolution of the implantation-induced damage was observed and a relationship between the damage evolution and implantation-induced damage is demonstrated. This work would be beneficial to understand the mechanism of ion-slicing of GaN and to provide a platform for the hybrid integration of GaN devices with standard Si CMOS process.

  7. Metal contacts on ZnSe and GaN

    Energy Technology Data Exchange (ETDEWEB)

    Duxstad, Kristin Joy [Univ. of California, Berkeley, CA (United States). Materials Science and Mineral Engineering

    1997-05-01

    Recently, considerable interest has been focused on the development of blue light emitting materials and devices. The focus has been on GaN and ZnSe, direct band gap semiconductors with bands gaps of 3.4 and 2.6 eV, respectively. To have efficient, reliable devices it is necessary to have thermally and electrically stable Ohmic contacts. This requires knowledge of the metal-semiconductor reaction behavior. To date few studies have investigated this behavior. Much information has accumulated over the years on the behavior of metals on Si and GaAs. This thesis provides new knowledge for the more ionic wide band gap semiconductors. The initial reaction temperatures, first phases formed, and phase stability of Pt, Pd, and Ni on both semiconductors were investigated. The reactions of these metals on ZnSe and GaN are discussed in detail and correlated with predicted behavior. In addition, comparisons are made between these highly ionic semiconductors and Si and GaAs. The trends observed here should also be applicable to other II-VI and III-Nitride semiconductor systems, while the information on phase formation and stability should be useful in the development of contacts for ZnSe and GaN devices.

  8. Dopant Adsorption and Incorporation at Irradiated GaN Surfaces

    Science.gov (United States)

    Sun, Qiang; Selloni, Annabella; Myers, Thomas; Doolittle, W. Alan

    2006-03-01

    Mg and O are two of the common dopants in GaN, but, in spite of extensive investigation, the atomic scale understanding of their adsorption and incorporation is still incomplete. In particular, high-energy electron irradiation, such as occurring during RHEED, has been reported to have an important effect on the incorporation of these impurities, but no study has addressed the detailed mechanisms of this effect yet. Here we use DFT calculations to study the adsorption and incorporation of Mg and O at the Ga- and N-polar GaN surfaces under various Ga, Mg and O coverage conditions as well as in presence of light or electron beam-induced electronic excitation. We find that the adsorption and incorporation of the two impurities have opposite surface polarity dependence: substitutional Mg prefers to incorporate at the GaN(0001) surface, while O prefers to adsorb and incorporate at the N-polar surface. In addition, our results indicate that in presence of light irradiation the tendency of Mg to surface-segregate is reduced. The O adsorption energy on the N-polar surface is also significantly reduced, consistent with the experimental observation of a much smaller concentration of oxygen in the irradiated samples.

  9. Rare earth point defects in GaN

    Energy Technology Data Exchange (ETDEWEB)

    Sanna, S.

    2007-12-14

    In this work we investigate rare earth doped GaN, by means of theoretical simulations. The huge unit cells necessary to model the experimental system, where dilute amount of rare earth ions are used, are handled with the charge self consistent density-functional based-tight binding (SCC-DFTB) calculational scheme. The method has been extended to include LDA+U and simplified self interaction corrected (SIC)-like potentials for the simulation of systems with localised and strongly correlated electrons. A set of tight-binding parameters has been created to model the interaction of GaN with some dopants, including a selection of lanthanide ions interesting due to their optical or magnetic properties (Pr, Eu, Gd, Er and Tm). The f-electrons were treated as valence electrons. A qualitatively correct description of the band gap is crucial for the simulation of rare earth doped GaN, because the luminescence intensity of the implanted samples depends on the size of the host band gap and because the rare earths could introduce charge transition levels near the conduction band. In this work these levels are calculated with the Slater-Janak (SJ) transition state model, which allows an approximate calculation of the charge transition levels by analysing the Kohn-Sham eigenvalues of the DFT. (orig.)

  10. Dislocation core structures in Si-doped GaN

    International Nuclear Information System (INIS)

    Rhode, S. L.; Fu, W. Y.; Sahonta, S.-L.; Kappers, M. J.; Humphreys, C. J.; Horton, M. K.; Pennycook, T. J.; Dusane, R. O.; Moram, M. A.

    2015-01-01

    Aberration-corrected scanning transmission electron microscopy was used to investigate the core structures of threading dislocations in plan-view geometry of GaN films with a range of Si-doping levels and dislocation densities ranging between (5 ± 1) × 10 8  and (10 ± 1) × 10 9  cm −2 . All a-type (edge) dislocation core structures in all samples formed 5/7-atom ring core structures, whereas all (a + c)-type (mixed) dislocations formed either double 5/6-atom, dissociated 7/4/8/4/9-atom, or dissociated 7/4/8/4/8/4/9-atom core structures. This shows that Si-doping does not affect threading dislocation core structures in GaN. However, electron beam damage at 300 keV produces 4-atom ring structures for (a + c)-type cores in Si-doped GaN

  11. Dislocation core structures in Si-doped GaN

    Energy Technology Data Exchange (ETDEWEB)

    Rhode, S. L., E-mail: srhode@imperial.ac.uk; Fu, W. Y.; Sahonta, S.-L.; Kappers, M. J.; Humphreys, C. J. [Department of Materials Science and Metallurgy, University of Cambridge, Charles Babbage Road, Cambridge CB3 0FS (United Kingdom); Horton, M. K. [Department of Materials, Imperial College London, Exhibition Road, London SW7 2AZ (United Kingdom); Pennycook, T. J. [SuperSTEM, STFC Daresbury Laboratories, Warrington WA4 4AD (United Kingdom); Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH (United Kingdom); Dusane, R. O. [Department of Metallurgical Engineering and Materials Science, Indian Institute of Technology Bombay, Mumbai 400076 (India); Moram, M. A. [Department of Materials Science and Metallurgy, University of Cambridge, Charles Babbage Road, Cambridge CB3 0FS (United Kingdom); Department of Materials, Imperial College London, Exhibition Road, London SW7 2AZ (United Kingdom)

    2015-12-14

    Aberration-corrected scanning transmission electron microscopy was used to investigate the core structures of threading dislocations in plan-view geometry of GaN films with a range of Si-doping levels and dislocation densities ranging between (5 ± 1) × 10{sup 8} and (10 ± 1) × 10{sup 9} cm{sup −2}. All a-type (edge) dislocation core structures in all samples formed 5/7-atom ring core structures, whereas all (a + c)-type (mixed) dislocations formed either double 5/6-atom, dissociated 7/4/8/4/9-atom, or dissociated 7/4/8/4/8/4/9-atom core structures. This shows that Si-doping does not affect threading dislocation core structures in GaN. However, electron beam damage at 300 keV produces 4-atom ring structures for (a + c)-type cores in Si-doped GaN.

  12. Radiation sensors based on GaN microwires

    Science.gov (United States)

    Verheij, D.; Peres, M.; Cardoso, S.; Alves, L. C.; Alves, E.; Durand, C.; Eymery, J.; Lorenz, K.

    2018-05-01

    GaN microwires were shown to possess promising characteristics as building blocks for radiation resistant particle detectors. They were grown by metal organic vapour phase epitaxy with diameters between 1 and 2 μm and lengths around 20 μm. Devices were fabricated by depositing gold contacts at the extremities of the wires using photolithography. The response of these single wire radiation sensors was then studied under irradiation with 2 MeV protons. Severe degradation of the majority of devices only sets in for fluences above protons cm‑2 revealing good radiation resistance. During proton irradiation, a clear albeit small current gain was observed with a corresponding decay time below 1 s. Photoconductivity measurements upon irradiation with UV light were carried out before and after the proton irradiation. Despite a relatively low gain, attributed to significant dark currents caused by a high dopant concentration, fast response times of a few seconds were achieved comparable to state-of-the-art GaN nanowire photodetectors. Irradiation and subsequent annealing resulted in an overall improvement of the devices regarding their response to UV radiation. The photocurrent gain increased compared to the values that were obtained prior to the irradiation, without compromising the decay times. The results indicate the possibility of using GaN microwires not only as UV detectors, but also as particle detectors.

  13. High temperature refractive indices of GaN

    Energy Technology Data Exchange (ETDEWEB)

    Liu, C.; Stepanov, S.; Gott, A.; Shields, P.A.; Zhirnov, E.; Wang, W.N. [Department of Physics, University of Bath, Bath, BA2 7AY (United Kingdom); Steimetz, E.; Zettler, J.T. [LayTec, Helmholtzstr. 13-14, 10587 Berlin (Germany)

    2006-06-15

    Undoped GaN (u-GaN) films were grown by low pressure metalorganic vapour phase epitaxy (LP-MOVPE) on sapphire substrates. In situ optical monitoring was applied to the growth process either using a LayTec EpiR-DA TT spectroscopic reflectometer or Filmetrics F30. Refractive indices of u-GaN films at 1060 C were obtained in a spectral range from 370-900 nm. A peak at 412{+-}5 nm in refractive index spectra was observed, which most likely corresponds to the band-gap of hexagonal GaN at a temperature of 1060 C. Refractive indices below this band-gap are fitted well to the first-order Sellmeier formula. As an example of the applications of the refractive indices, the effective film thicknesses of GaN during the resumption from 3 dimensional (3D) to 2 dimensional (2D) growth have been calculated from the spectra recorded by a LayTec system using the optical constants obtained. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  14. A fluidic/pneumatic interface amplifier

    Science.gov (United States)

    Limbert, D. E.; Kegel, T. M.

    The development of a low cost, reliable, linear pressure amplifier to interface Laminar Proportional Amplifiers (LPA) to pneumatic controllers is presented. The amplifier consists of an LPA input stage and an output stage consisting of a venturi in series with a bellows nozzle valve. The LPA output drives the bellows nozzle valve thereby altering the flowrate through the venturi. The pressure within the venturi throat region, which is the amplifier output, changes with the flowrate. Non-linear characteristics, due to supersonic flow within the venturi, are altered through the use of feedback to the LPA input. A computer based model, to aid in optimizing the amplifier design, is developed. This model incorporates the effects of shock waves and boundary layers within the venturi. Good correspondence between the model and an experimental prototype is shown.

  15. Amplified OTDR Systems for Multipoint Corrosion Monitoring

    Science.gov (United States)

    Nascimento, Jehan F.; Silva, Marcionilo J.; Coêlho, Isnaldo J. S.; Cipriano, Eliel; Martins-Filho, Joaquim F.

    2012-01-01

    We present two configurations of an amplified fiber-optic-based corrosion sensor using the optical time domain reflectometry (OTDR) technique as the interrogation method. The sensor system is multipoint, self-referenced, has no moving parts and can measure the corrosion rate several kilometers away from the OTDR equipment. The first OTDR monitoring system employs a remotely pumped in-line EDFA and it is used to evaluate the increase in system reach compared to a non-amplified configuration. The other amplified monitoring system uses an EDFA in booster configuration and we perform corrosion measurements and evaluations of system sensitivity to amplifier gain variations. Our experimental results obtained under controlled laboratory conditions show the advantages of the amplified system in terms of longer system reach with better spatial resolution, and also that the corrosion measurements obtained from our system are not sensitive to 3 dB gain variations. PMID:22737017

  16. An Implantable CMOS Amplifier for Nerve Signals

    DEFF Research Database (Denmark)

    Nielsen, Jannik Hammel; Lehmann, Torsten

    2001-01-01

    In this paper, a low noise high gain CMOS amplifier for minute nerve signals is presented. By using a mixture of weak- and strong inversion transistors, optimal noise suppression in the amplifier is achieved. A continuous-time offset-compensation technique is utilized in order to minimize impact...... on the amplifier input nodes. The method for signal recovery from noisy nerve signals is presented. A prototype amplifier is realized in a standard digital 0.5 μm CMOS single poly, n-well process. The prototype amplifier features a gain of 80 dB over a 3.6 kHz bandwidth, a CMRR of more than 87 dB and a PSRR...

  17. Bandwidth tunable amplifier for recording biopotential signals.

    Science.gov (United States)

    Hwang, Sungkil; Aninakwa, Kofi; Sonkusale, Sameer

    2010-01-01

    This paper presents a low noise, low power, bandwidth tunable amplifier for bio-potential signal recording applications. By employing depletion-mode pMOS transistor in diode configuration as a tunable sub pA current source to adjust the resistivity of MOS-Bipolar pseudo-resistor, the bandwidth is adjusted without any need for a separate band-pass filter stage. For high CMRR, PSRR and dynamic range, a fully differential structure is used in the design of the amplifier. The amplifier achieves a midband gain of 39.8dB with a tunable high-pass cutoff frequency ranging from 0.1Hz to 300Hz. The amplifier is fabricated in 0.18εm CMOS process and occupies 0.14mm(2) of chip area. A three electrode ECG measurement is performed using the proposed amplifier to show its feasibility for low power, compact wearable ECG monitoring application.

  18. Dual-range linearized transimpedance amplifier system

    Science.gov (United States)

    Wessendorf, Kurt O.

    2010-11-02

    A transimpedance amplifier system is disclosed which simultaneously generates a low-gain output signal and a high-gain output signal from an input current signal using a single transimpedance amplifier having two different feedback loops with different amplification factors to generate two different output voltage signals. One of the feedback loops includes a resistor, and the other feedback loop includes another resistor in series with one or more diodes. The transimpedance amplifier system includes a signal linearizer to linearize one or both of the low- and high-gain output signals by scaling and adding the two output voltage signals from the transimpedance amplifier. The signal linearizer can be formed either as an analog device using one or two summing amplifiers, or alternately can be formed as a digital device using two analog-to-digital converters and a digital signal processor (e.g. a microprocessor or a computer).

  19. Detection of Non-Amplified Genomic DNA

    CERN Document Server

    Corradini, Roberto

    2012-01-01

    This book offers a state-of-the-art overview on non amplified DNA detection methods and provides chemists, biochemists, biotechnologists and material scientists with an introduction to these methods. In fact all these fields have dedicated resources to the problem of nucleic acid detection, each contributing with their own specific methods and concepts. This book will explain the basic principles of the different non amplified DNA detection methods available, highlighting their respective advantages and limitations. The importance of non-amplified DNA sequencing technologies will be also discussed. Non-amplified DNA detection can be achieved by adopting different techniques. Such techniques have allowed the commercialization of innovative platforms for DNA detection that are expected to break into the DNA diagnostics market. The enhanced sensitivity required for the detection of non amplified genomic DNA has prompted new strategies that can achieve ultrasensitivity by combining specific materials with specifi...

  20. Ultrafast disk lasers and amplifiers

    Science.gov (United States)

    Sutter, Dirk H.; Kleinbauer, Jochen; Bauer, Dominik; Wolf, Martin; Tan, Chuong; Gebs, Raphael; Budnicki, Aleksander; Wagenblast, Philipp; Weiler, Sascha

    2012-03-01

    Disk lasers with multi-kW continuous wave (CW) output power are widely used in manufacturing, primarily for cutting and welding applications, notably in the automotive industry. The ytterbium disk technology combines high power (average and/or peak power), excellent beam quality, high efficiency, and high reliability with low investment and operating costs. Fundamental mode picosecond disk lasers are well established in micro machining at high throughput and perfect precision. Following the world's first market introduction of industrial grade 50 W picosecond lasers (TruMicro 5050) at the Photonics West 2008, the second generation of the TruMicro series 5000 now provides twice the average power (100 W at 1030 nm, or 60 W frequency doubled, green output) at a significantly reduced footprint. Mode-locked disk oscillators achieve by far the highest average power of any unamplified lasers, significantly exceeding the 100 W level in laboratory set-ups. With robust long resonators their multi-microjoule pulse energies begin to compete with typical ultrafast amplifiers. In addition, significant interest in disk technology has recently come from the extreme light laser community, aiming for ultra-high peak powers of petawatts and beyond.

  1. Control of strain in GaN by a combination of H2 and N2 carrier gases

    International Nuclear Information System (INIS)

    Yamaguchi, Shigeo; Kariya, Michihiko; Kosaki, Masayoshi; Yukawa, Yohei; Nitta, Shugo; Amano, Hiroshi; Akasaki, Isamu

    2001-01-01

    We study the effect of a combination of N 2 and H 2 carrier gases on the residual strain and crystalline properties of GaN, and we propose its application to the improvement of crystalline quality of GaN/Al 0.17 Ga 0.83 N multiple quantum well (MQW) structures. GaN was grown with H 2 or N 2 carrier gas (H 2 - or N 2 - GaN) on an AlN low-temperature-deposited buffer layer. A (0001) sapphire substrate was used. N 2 - GaN was grown on H 2 - GaN. The total thickness was set to be 1.5 μm, and the ratio of N 2 - GaN thickness to the total thickness, x, ranged from 0 to 1. With increasing x, the tensile stress in GaN increased. Photoluminescence intensity at room temperature was much enhanced. Moreover, the crystalline quality of GaN/Al 0.17 Ga 0.83 N MQW was much higher when the MQW was grown with N 2 on H 2 - GaN than when it was grown with H 2 on H 2 - GaN. These results were due to the achievement of control of strain in GaN using a combination of N 2 - GaN and H 2 - GaN. [copyright] 2001 American Institute of Physics

  2. Synthesis, optical properties and residual strain effect of GaN nanowires generated via metal-assisted photochemical electroless etching

    KAUST Repository

    Najar, Adel; Shafa, Muhammad; Anjum, Dalaver H.

    2017-01-01

    Herein, we report on the studies of GaN nanowires (GaN NWs) prepared via a metal-assisted photochemical electroless etching method with Pt as the catalyst. It has been found that etching time greatly influences the growth of GaN NWs. The density

  3. Si Complies with GaN to Overcome Thermal Mismatches for the Heteroepitaxy of Thick GaN on Si.

    Science.gov (United States)

    Tanaka, Atsunori; Choi, Woojin; Chen, Renjie; Dayeh, Shadi A

    2017-10-01

    Heteroepitaxial growth of lattice mismatched materials has advanced through the epitaxy of thin coherently strained layers, the strain sharing in virtual and nanoscale substrates, and the growth of thick films with intermediate strain-relaxed buffer layers. However, the thermal mismatch is not completely resolved in highly mismatched systems such as in GaN-on-Si. Here, geometrical effects and surface faceting to dilate thermal stresses at the surface of selectively grown epitaxial GaN layers on Si are exploited. The growth of thick (19 µm), crack-free, and pure GaN layers on Si with the lowest threading dislocation density of 1.1 × 10 7 cm -2 achieved to date in GaN-on-Si is demonstrated. With these advances, the first vertical GaN metal-insulator-semiconductor field-effect transistors on Si substrates with low leakage currents and high on/off ratios paving the way for a cost-effective high power device paradigm on an Si CMOS platform are demonstrated. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  4. Barrier characteristics of Pt/Ru Schottky contacts on n-type GaN ...

    Indian Academy of Sciences (India)

    Pt/Ru Schottky rectifiers; n-type GaN; temperature–dependent electrical properties; inhomogeneous barrier heights .... a 2 μm thick Si-doped GaN films which were grown by .... ted values of ap using (9) for two Gaussian distributions of bar-.

  5. Hole-induced d"0 ferromagnetism enhanced by Na-doping in GaN

    International Nuclear Information System (INIS)

    Zhang, Yong; Li, Feng

    2017-01-01

    The d"0 ferromagnetism in wurtzite GaN is investigated by the first-principle calculations. It is found that spontaneous magnetization occurs if sufficient holes are injected in GaN. Both Ga vacancy and Na doping can introduce holes into GaN. However, Ga vacancy has a high formation energy, and is thus unlikely to occur in a significant concentration. In contrast, Na doping has relatively low formation energy. Under N-rich growth condition, Na doping with a sufficient concentration can be achieved, which can induce half-metallic ferromagnetism in GaN. Moreover, the estimated Curie temperature of Na-doped GaN is well above the room temperature. - Highlights: • Hole-induced ferromagnetism in GaN is confirmed. • Both Ga Vacancy and Na-doping can introduce hole into GaN. • The concentration of Ga vacancy is too low to induce detectable ferromagnetism. • Na-doped GaN is a possible ferromagnet with a high curie-temperature.

  6. Luminescence evolution of porous GaN thin films prepared via UV-assisted electrochemical etching

    International Nuclear Information System (INIS)

    Cheah, S.F.; Lee, S.C.; Ng, S.S.; Yam, F.K.; Abu Hassan, H.; Hassan, Z.

    2015-01-01

    Porous gallium nitride (GaN) thin films with different surface morphologies and free carriers properties were fabricated from Si-doped GaN thin films using ultra-violet assisted electrochemical etching approach under various etching voltages. Fluctuation of luminescence signals was observed in the photoluminescence spectra of porous GaN thin films. Taking advantage of the spectral sensitivity of infrared attenuated total reflection spectroscopy on semiconductor materials, roles of free carriers and porous structure in controlling luminescence properties of GaN were investigated thoroughly. The results revealed that enhancement in luminescence signal is not always attained upon porosification. Although porosification is correlated to the luminescence enhancement, however, free carrier is the primary factor to enhance luminescence intensity. Due to unavoidable significant reduction of free carriers from Si-doped GaN in the porosification process, control of etching depth (i.e., thickness of porous layer formed from the Si-doped layer) is critical in fabricating porous GaN thin film with enhanced luminescence response. - Highlights: • Various pore morphologies with free carrier properties are produced by Si-doped GaN. • Free carriers are important to control the luminescence signal of porous GaN. • Enhancement of luminescence signal relies on the pore depth of Si-doped layer

  7. Synthesis and cathodoluminescence of Sb/P co-doped GaN nanowires

    International Nuclear Information System (INIS)

    Wang, Zaien; Liu, Baodan; Yuan, Fang; Hu, Tao; Zhang, Guifeng; Dierre, Benjamin; Hirosaki, Naoto; Sekiguchi, Takashi; Jiang, Xin

    2014-01-01

    Sb/P co-doped Gallium Nitride (GaN) nanowires were synthesized via a simple chemical vapor deposition (CVD) process by heating Ga 2 O 3 and Sb powders in NH 3 atmosphere. Scanning electron microscope (SEM), X-ray diffraction (XRD), transmission electron microscope (TEM) and energy dispersive X-ray spectroscopy (EDS) measurements confirmed the as-synthesized products were Sb/P co-doped GaN nanowires with rough morphology and hexagonal wurtzite structure. Room temperature cathodoluminescence (CL) demonstrated that an obvious band shift of GaN nanowires can be observed due to Sb/P co-doping. Possible explanation for the growth and luminescence mechanism of Sb/P co-doped GaN nanowires was discussed. Highlight: • Sb/P co-doped GaN nanowires were synthesized through a well-designed multi-channel chemical vapor deposition (CVD) process. • Sb/P co-doping leads to the crystallinity deterioration of GaN nanowires. • Sb/P co-doping caused the red-shift of GaN nanowires band-gap in UV range. • Compared with Sb doping, P atoms are more easy to incorporate into the GaN lattice

  8. Structural effects of field emission from GaN nanofilms on SiC substrates

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Cheng-Cheng; Wang, Ru-Zhi, E-mail: wrz@bjut.edu.cn; Zhu, Man-Kang; Yan, Hui [College of Materials Science and Engineering, Beijing University of Technology, 100 Pingleyuan, Chaoyang District, Beijing 100124 (China); Liu, Peng [Department of Physics Tsinghua University, Tsinghua-Foxconn Nanotechnology Research Center, Beijing 100084 (China); Wang, Bi-Ben [College of Chemistry and Chemical Engineering, Chongqing University of Technology, Chongqing 400054 (China)

    2014-04-21

    GaN nanofilms (NFs) with different structures are grown on SiC substrates by pulsed laser deposition under different conditions. The synthesized GaN NFs are studied by X-ray diffraction, field-emission (FE) scanning electron microscopy, X-ray photoelectron spectroscopy, and atomic force microscopy. The GaN NFs are composed of diversified GaN nanoparticles with a diameter of 9–38 nm, thickness of 10–50 nm, and roughness of 0.22–13.03 nm. FE from the GaN NFs is structure dependent, which is explained by stress changing the band gap of the NFs. By structure modulation, the turn-on field of GaN NFs can be as low as 0.66 V/μm at a current density of 1 μA/cm{sup 2}, with a current density of up to 1.1 mA/cm{sup 2} at a field of 4.18 V/μm. Fowler-Nordheim curves of some samples contain multiple straight lines, which originate from the structural change and diversification of GaN nanoparticles under an applied field. Overall, our results suggest that GaN NFs with excellent FE properties can be prepared on SiC substrates, which provides a new route to fabricate high-efficiency FE nanodevices.

  9. GaN and LED structures grown on pre-patterned silicon pillar arrays

    Energy Technology Data Exchange (ETDEWEB)

    Li, Shunfeng; Fuendling, Soenke; Soekmen, Uensal; Merzsch, Stephan; Neumann, Richard; Peiner, Erwin; Wehmann, Hergo-Heinrich; Waag, Andreas [Institut fuer Halbleitertechnik, TU Braunschweig, Hans-Sommer-Strasse 66, 38106 Braunschweig (Germany); Hinze, Peter; Weimann, Thomas [Physikalisch-Technische Bundesanstalt (PTB), Bundesallee 100, 38116 Braunschweig (Germany); Jahn, Uwe; Trampert, Achim; Riechert, Henning [Paul-Drude-Institut fuer Festkoerperelektronik, Hausvoigteiplatz 5-7, 10117 Berlin (Germany)

    2010-01-15

    GaN nanorods (or nanowires) have attracted great interest in a variety of applications, e.g. high-efficiency light emitting diodes, monolithic white light emission and optical interconnection due to their superior properties. In contrast to the mostly investigated self-assembled growth of GaN nanorods, we performed GaN nanorod growth by pre-patterning of the Si substrates. The pattern was transferred to Si substrates by photolithography and cryo-temperature inductively-coupled plasma etching. These Si templates then were used for further GaN nanorod growth by metal-organic vapour phase epitaxy (MOVPE). The low temperature AlN nucleation layer had to be optimized since it differs from its 2D layer counterpart on the surface area and orientations. We found a strong influence of diffusion processes, i.e. the GaN grown on top of the Si nanopillars can deplete the GaN around the Si pillars. Transmission electron microscopy measurements demonstrated clearly that the threading dislocations bend to the side facets of the pyramidal GaN nanostructures and terminate. Cathodoluminescence measurements reveal a difference of In composition and/or thickness of InGaN quantum wells on the different facets of the pyramidal GaN nanostructures. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  10. Selective area growth of GaN rod structures by MOVPE: Dependence on growth conditions

    Energy Technology Data Exchange (ETDEWEB)

    Li, Shunfeng; Fuendling, Soenke; Wang, Xue; Erenburg, Milena; Al-Suleiman, Mohamed Aid Mansur; Wei, Jiandong; Wehmann, Hergo-Heinrich; Waag, Andreas [Institut fuer Halbleitertechnik, TU Braunschweig, Hans-Sommer-Strasse 66, 38106 Braunschweig (Germany); Bergbauer, Werner [Institut fuer Halbleitertechnik, TU Braunschweig, Hans-Sommer-Strasse 66, 38106 Braunschweig (Germany); Osram Opto Semiconductors GmbH, Leibnizstr. 4, 93055 Regensburg (Germany); Strassburg, Martin [Osram Opto Semiconductors GmbH, Leibnizstr. 4, 93055 Regensburg (Germany)

    2011-07-15

    Selective area growth of GaN nanorods by metalorganic vapor phase epitaxy is highly demanding for novel applications in nano-optoelectronic and nanophotonics. Recently, we report the successful selective area growth of GaN nanorods in a continuous-flow mode. In this work, as examples, we show the morphology dependence of GaN rods with {mu}m or sub-{mu}m in diameters on growth conditions. Firstly, we found that the nitridation time is critical for the growth, with an optimum from 90 to 180 seconds. This leads to more homogeneous N-polar GaN rods growth. A higher temperature during GaN rod growth tends to increase the aspect ratio of the GaN rods. This is due to the enhanced surface diffusion of growth species. The V/III ratio is also an important parameter for the GaN rod growth. Its increase causes reduction of the aspect ratio of GaN rods, which could be explained by the relatively lower growth rate on (000-1) N-polar top surface than it on {l_brace}1-100{r_brace} m-planes by supplying more NH{sub 3} (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  11. Gadolinium-Based GaN for Neutron Detection with Gamma Discrimination

    Science.gov (United States)

    2016-06-01

    Gadolinium-Based GaN for Neutron Detection with Gamma Discrimination Distribution Statement A. Approved for public release; distribution is...Final Technical Report BRBAA08-Per5-Y-1-2-0030 Title: “Gadolinium-Based GaN for Neutron Detection with Gamma Discrimination ” Grant...Analysis  .............................................................................................  23   6.   Gamma-ray Discrimination

  12. TEM characterization of catalyst- and mask-free grown GaN nanorods

    International Nuclear Information System (INIS)

    Schowalter, M; Aschenbrenner, T; Kruse, C; Hommel, D; Rosenauer, A

    2010-01-01

    Catalyst- and mask-free grown GaN nanorods have been investigated using transmission electron microscopy (TEM), scanning transmission electron microscopy (STEM) and energy filtered transmission electron microscopy (EFTEM). The nanorods were grown on nitridated r-plane sapphire substrates in a molecular beam epitaxy reactor. We investigated samples directly after the nitridation and after the overgrowth of the structure with GaN. High resolution transmission electron microscopy (HRTEM) and EFTEM revealed that AlN islands have formed due to nitridation. After overgrowth, the AlN islands could not be observed any more, neither by EFTEM nor by Z-contrast imaging. Instead, a smooth layer consisting of AlGaN was found. The investigation of the overgrown sample revealed that an a-plane GaN layer and GaN nanorods on top of the a-plane GaN have formed. The nanorods reduced from top of the a-plane GaN towards the a-plane GaN/sapphire interface suggesting that the nanorods originate at the AlN islands found after nitridation. However, this could not be shown unambiguously. The number of threading dislocations in the nanorods was very low. The analysis of the epitaxial relationship to the a-plane GaN showed that the nanorods grew along the [000-1] direction, and the [1-100] direction of the rods was parallel to the [0001] direction of the a-plane GaN.

  13. Electronic and Optical Properties of Two-Dimensional GaN from First-Principles.

    Science.gov (United States)

    Sanders, Nocona; Bayerl, Dylan; Shi, Guangsha; Mengle, Kelsey A; Kioupakis, Emmanouil

    2017-12-13

    Gallium nitride (GaN) is an important commercial semiconductor for solid-state lighting applications. Atomically thin GaN, a recently synthesized two-dimensional material, is of particular interest because the extreme quantum confinement enables additional control of its light-emitting properties. We performed first-principles calculations based on density functional and many-body perturbation theory to investigate the electronic, optical, and excitonic properties of monolayer and bilayer two-dimensional (2D) GaN as a function of strain. Our results demonstrate that light emission from monolayer 2D GaN is blueshifted into the deep ultraviolet range, which is promising for sterilization and water-purification applications. Light emission from bilayer 2D GaN occurs at a similar wavelength to its bulk counterpart due to the cancellation of the effect of quantum confinement on the optical gap by the quantum-confined Stark shift. Polarized light emission at room temperature is possible via uniaxial in-plane strain, which is desirable for energy-efficient display applications. We compare the electronic and optical properties of freestanding two-dimensional GaN to atomically thin GaN wells embedded within AlN barriers in order to understand how the functional properties are influenced by the presence of barriers. Our results provide microscopic understanding of the electronic and optical characteristics of GaN at the few-layer regime.

  14. Conduction, reverse conduction and switching characteristics of GaN E-HEMT

    DEFF Research Database (Denmark)

    Sørensen, Charlie; Lindblad Fogsgaard, Martin; Christiansen, Michael Noe

    2015-01-01

    In this paper switching and conduction characterization of the GS66508P-E03 650V enhancement mode gallium nitride (GaN) transistor is described. GaN transistors are leading edge technology and as so, their characteristics are less than well documented. The switching characteristics are found using...

  15. The investigation of stress in freestanding GaN crystals grown from Si substrates by HVPE.

    Science.gov (United States)

    Lee, Moonsang; Mikulik, Dmitry; Yang, Mino; Park, Sungsoo

    2017-08-17

    We investigate the stress evolution of 400 µm-thick freestanding GaN crystals grown from Si substrates by hydride vapour phase epitaxy (HVPE) and the in situ removal of Si substrates. The stress generated in growing GaN can be tuned by varying the thickness of the MOCVD AlGaN/AlN buffer layers. Micro Raman analysis shows the presence of slight tensile stress in the freestanding GaN crystals and no stress accumulation in HVPE GaN layers during the growth. Additionally, it is demonstrated that the residual tensile stress in HVPE GaN is caused only by elastic stress arising from the crystal quality difference between Ga- and N-face GaN. TEM analysis revealed that the dislocations in freestanding GaN crystals have high inclination angles that are attributed to the stress relaxation of the crystals. We believe that the understanding and characterization on the structural properties of the freestanding GaN crystals will help us to use these crystals for high-performance opto-electronic devices.

  16. Phase noise in RF and microwave amplifiers.

    Science.gov (United States)

    Boudot, Rodolphe; Rubiola, Enrico

    2012-12-01

    Understanding amplifier phase noise is a critical issue in many fields of engineering and physics, such as oscillators, frequency synthesis, telecommunication, radar, and spectroscopy; in the emerging domain of microwave photonics; and in exotic fields, such as radio astronomy, particle accelerators, etc. Focusing on the two main types of base noise in amplifiers, white and flicker, the power spectral density of the random phase φ(t) is Sφ(f) = b(0) + b(-1)/f. White phase noise results from adding white noise to the RF spectrum in the carrier region. For a given RF noise level, b(0) is proportional to the reciprocal of the carrier power P(0). By contrast, flicker results from a near-dc 1/f noise-present in all electronic devices-which modulates the carrier through some parametric effect in the semiconductor. Thus, b(-1) is a parameter of the amplifier, constant in a wide range of P(0). The consequences are the following: Connecting m equal amplifiers in parallel, b(-1) is 1/m times that of one device. Cascading m equal amplifiers, b(-1) is m times that of one amplifier. Recirculating the signal in an amplifier so that the gain increases by a power of m (a factor of m in decibels) as a result of positive feedback (regeneration), we find that b(-1) is m(2) times that of the amplifier alone. The feedforward amplifier exhibits extremely low b(-1) because the carrier is ideally nulled at the input of its internal error amplifier. Starting with an extensive review of the literature, this article introduces a system-oriented model which describes the phase flickering. Several amplifier architectures (cascaded, parallel, etc.) are analyzed systematically, deriving the phase noise from the general model. There follow numerous measurements of amplifiers using different technologies, including some old samples, and in a wide frequency range (HF to microwaves), which validate the theory. In turn, theory and results provide design guidelines and give suggestions for CAD and

  17. Simulations of longitudinally pumped dye laser amplifier

    International Nuclear Information System (INIS)

    Takehisa, Kiwamu; Takemori, Satoshi

    1995-01-01

    Simulations of a copper laser pumped dye laser amplifier and new designs of the longitudinally pumped dye laser amplifier are presented. The simulations take the consideration of the amplified spontaneous emission (ASE). The new designs utilize a center-hole reflector instead of a dichroic mirror. The simulation results indicate that the poor spatial overlap between the pump beam and the dye beam in the transverse pumping not only reduces the laser output power, but also generates ASE strongly. The results also indicate that the longitudinal pumping is as efficient as the transverse pumping. (author)

  18. A parallel input composite transimpedance amplifier

    Science.gov (United States)

    Kim, D. J.; Kim, C.

    2018-01-01

    A new approach to high performance current to voltage preamplifier design is presented. The design using multiple operational amplifiers (op-amps) has a parasitic capacitance compensation network and a composite amplifier topology for fast, precision, and low noise performance. The input stage consisting of a parallel linked JFET op-amps and a high-speed bipolar junction transistor (BJT) gain stage driving the output in the composite amplifier topology, cooperating with the capacitance compensation feedback network, ensures wide bandwidth stability in the presence of input capacitance above 40 nF. The design is ideal for any two-probe measurement, including high impedance transport and scanning tunneling microscopy measurements.

  19. Fundamentals of RF and microwave transistor amplifiers

    CERN Document Server

    Bahl, Inder J

    2009-01-01

    A Comprehensive and Up-to-Date Treatment of RF and Microwave Transistor Amplifiers This book provides state-of-the-art coverage of RF and microwave transistor amplifiers, including low-noise, narrowband, broadband, linear, high-power, high-efficiency, and high-voltage. Topics covered include modeling, analysis, design, packaging, and thermal and fabrication considerations. Through a unique integration of theory and practice, readers will learn to solve amplifier-related design problems ranging from matching networks to biasing and stability. More than 240 problems are included to help read

  20. Quantum electronics maser amplifiers and oscillators

    CERN Document Server

    Fain, V M; Sanders, J H

    2013-01-01

    Quantum Electronics, Volume 2: Maser Amplifiers and Oscillators deals with the experimental and theoretical aspects of maser amplifiers and oscillators which are based on the principles of quantum electronics. It shows how the concepts and equations used in quantum electronics follow from the basic principles of theoretical physics.Comprised of three chapters, this volume begins with a discussion on the elements of the theory of quantum oscillators and amplifiers working in the microwave region, along with the practical achievements in this field. Attention is paid to two-level paramagnetic ma

  1. Unconditionally stable microwave Si-IMPATT amplifiers

    International Nuclear Information System (INIS)

    Seddik, M.M.

    1986-07-01

    The purpose of this investigation has been the development of an improved understanding of the design and analysis of microwave reflection amplifiers employing the negative resistance property of the IMPATT devices. Unconditionally stable amplifier circuit using a Silicon IMPATT diode is designed. The problems associated with the design procedures and the stability criterion are discussed. A computer program is developed to perform the computations. The stable characteristics of a reflection-type Si-IMPATT amplifier, such as gain, frequency and bandwidth are examined. It was found that at large signal drive levels, 7 dB gain with bandwidth of 800 MHz at 22,5 mA was obtained. (author)

  2. Lattice-Symmetry-Driven Epitaxy of Hierarchical GaN Nanotripods

    KAUST Repository

    Wang, Ping

    2017-01-18

    Lattice-symmetry-driven epitaxy of hierarchical GaN nanotripods is demonstrated. The nanotripods emerge on the top of hexagonal GaN nanowires, which are selectively grown on pillar-patterned GaN templates using molecular beam epitaxy. High-resolution transmission electron microscopy confirms that two kinds of lattice-symmetry, wurtzite (wz) and zinc-blende (zb), coexist in the GaN nanotripods. Periodical transformation between wz and zb drives the epitaxy of the hierarchical nanotripods with N-polarity. The zb-GaN is formed by the poor diffusion of adatoms, and it can be suppressed by improving the ability of the Ga adatoms to migrate as the growth temperature increased. This controllable epitaxy of hierarchical GaN nanotripods allows quantum dots to be located at the phase junctions of the nanotripods and nanowires, suggesting a new recipe for multichannel quantum devices.

  3. Positron annihilation study of Pd contacts on impurity-doped GaN

    International Nuclear Information System (INIS)

    Lee, Jong-Lam; Kim, Jong Kyu; Weber, Marc H.; Lynn, Kelvin G.

    2001-01-01

    Pd contacts on both n-type and p-type GaN were studied using positron annihilation spectroscopy, and the results were used to interpret the role of Ga vacancies on the band bending below the contacts. The concentration of Ga vacancy in Si-doped GaN was higher than that in the Mg-doped one. In Si-doped GaN, implanted positrons were annihilated at the nearer surface region and the interface of Pd/n-type GaN was detected by positrons clearly shifted toward the surface of Pd. This suggests that Ga vacancies could act as an interface state, pinning the Fermi level at the interface of Pd with GaN, leading to the production of a negative electric field below the interface. [copyright] 2001 American Institute of Physics

  4. Secondary ion mass spectrometry analysis of In-doped p-type GaN films

    International Nuclear Information System (INIS)

    Chiou, C.Y.; Wang, C.C.; Ling, Y.C.; Chiang, C.I.

    2003-01-01

    SIMS was used to investigate the isoelectronic In-doped p-type GaN films. The growth rate of the p-type GaN film decreased with increasing Mg and In doping. The Mg saturation in GaN was 3.55x10 19 atoms/cm 3 . The role of In as surfactant was evaluated by varying In concentrations and it was observed that the surface appeared smooth with increasing In incorporation. The Mg solubility in p-type GaN improved to 0.0025% molar ratio of the GaN with In incorporation. The In concentration results observed in neutron activation analysis (NAA) were found to be higher by a factor of 2.88 than that observed in SIMS and can be attributed to the difference in sensitivity of the two techniques. Good linearity in the results was observed from both techniques

  5. Prospects for the application of GaN power devices in hybrid electric vehicle drive systems

    International Nuclear Information System (INIS)

    Su, Ming; Chen, Chingchi; Rajan, Siddharth

    2013-01-01

    GaN, a wide bandgap semiconductor successfully implemented in optical and high-speed electronic devices, has gained momentum in recent years for power electronics applications. Along with rapid progress in material and device processing technologies, high-voltage transistors over 600 V have been reported by a number of teams worldwide. These advances make GaN highly attractive for the growing market of electrified vehicles, which currently employ bipolar silicon devices in the 600–1200 V class for the traction inverter. However, to capture this billion-dollar power market, GaN has to compete with existing IGBT products and deliver higher performance at comparable or lower cost. This paper reviews key achievements made by the GaN semiconductor industry, requirements of the automotive electric drive system and remaining challenges for GaN power devices to fit in the inverter application of hybrid vehicles. (invited review)

  6. Prospects for the application of GaN power devices in hybrid electric vehicle drive systems

    Science.gov (United States)

    Su, Ming; Chen, Chingchi; Rajan, Siddharth

    2013-07-01

    GaN, a wide bandgap semiconductor successfully implemented in optical and high-speed electronic devices, has gained momentum in recent years for power electronics applications. Along with rapid progress in material and device processing technologies, high-voltage transistors over 600 V have been reported by a number of teams worldwide. These advances make GaN highly attractive for the growing market of electrified vehicles, which currently employ bipolar silicon devices in the 600-1200 V class for the traction inverter. However, to capture this billion-dollar power market, GaN has to compete with existing IGBT products and deliver higher performance at comparable or lower cost. This paper reviews key achievements made by the GaN semiconductor industry, requirements of the automotive electric drive system and remaining challenges for GaN power devices to fit in the inverter application of hybrid vehicles.

  7. Spin injection in epitaxial MnGa(111)/GaN(0001) heterostructures

    Science.gov (United States)

    Zube, Christian; Malindretos, Joerg; Watschke, Lars; Zamani, Reza R.; Disterheft, David; Ulbrich, Rainer G.; Rizzi, Angela; Iza, Michael; Keller, Stacia; DenBaars, Steven P.

    2018-01-01

    Ferromagnetic MnGa(111) layers were grown on GaN(0001) by molecular beam epitaxy. MnGa/GaN Schottky diodes with a doping level of around n = 7 × 1018 cm-3 were fabricated to achieve single step tunneling across the metal/semiconductor junction. Below the GaN layer, a thin InGaN quantum well served as optical spin detector ("spin-LED"). For electron spin injection from MnGa into GaN and subsequent spin transport through a 45 nm (70 nm) thick GaN layer, we observe a circular polarization of 0.3% (0.2%) in the electroluminescence at 80 K. Interface mixing, spin polarization losses during electrical transport in the GaN layer, and spin relaxation in the InGaN quantum well are discussed in relation with the low value of the optically detected spin polarization.

  8. A density functional theory study of the TMG adsorption on the GaN surface

    Energy Technology Data Exchange (ETDEWEB)

    Ptasinska, Maria; Soltys, Jakub; Piechota, Jacek [Interdisciplinary Centre for Materials Modelling, University of Warsaw, ul. Pawinskiego 5a, 02-106 Warszawa (Poland); Krukowski, Stanislaw [Interdisciplinary Centre for Materials Modelling, University of Warsaw, ul. Pawinskiego 5a, 02-106 Warszawa (Poland); Institute of High Pressure Physics, Polish Academy of Sciences, ul. Sokolowska 29/37, 01-142 Warsaw (Poland)

    2011-07-01

    TMG (trimetylogallium) and NH{sub 3} (ammonia) are widely used reactants in the metal organic chemical vapor deposition (MOCVD) technique used in the growth of the GaN thin films. We have recently examined theoretically, with the help of the density functional theory (DFT), TMG adsorption on the GaN(0001) surface in order to study formation of bonds between Ga and N. Dangling bonds on the GaN(0001) surface were saturated with the hydrogen atoms. The slab polarization, which is due to the dangling bonds present on the GaN(0001) surface, and energy of the system in the vicinity of TMG was computed for different distances between the surface atoms and TMG. We also studied TMG diffusion on the GaN surface. As a result, the energy path for diffusion from Top N to Hollow was obtained.

  9. Kinetic-limited etching of magnesium doping nitrogen polar GaN in potassium hydroxide solution

    International Nuclear Information System (INIS)

    Jiang, Junyan; Zhang, Yuantao; Chi, Chen; Yang, Fan; Li, Pengchong; Zhao, Degang; Zhang, Baolin; Du, Guotong

    2016-01-01

    Graphical abstract: - Highlights: • Effects of Mg doping on wet etching of N-polar GaN are illustrated and analysed. • Etching process model of Mg-doped N-polar GaN in KOH solution is purposed. • It is found that Mg doping can induce tensile strain in N-polar GaN film. • N-polar p-GaN film with a hole concentration of 2.4 × 10"1"7 cm"−"3 is obtained. - Abstract: KOH based wet etchings were performed on both undoped and Mg-doped N-polar GaN films grown by metal-organic chemical vapor deposition. It is found that the etching rate for Mg-doped N-polar GaN gets slow obviously compared with undoped N-polar GaN. X-ray photoelectron spectroscopy analysis proved that Mg oxide formed on N-polar GaN surface is insoluble in KOH solution so that kinetic-limited etching occurs as the etching process goes on. The etching process model of Mg-doped N-polar GaN in KOH solution is tentatively purposed using a simplified ideal atomic configuration. Raman spectroscopy analysis reveals that Mg doping can induce tensile strain in N-polar GaN films. Meanwhile, p-type N-polar GaN film with a hole concentration of 2.4 × 10"1"7 cm"−"3 was obtained by optimizing bis-cyclopentadienyl magnesium flow rates.

  10. Kinetic-limited etching of magnesium doping nitrogen polar GaN in potassium hydroxide solution

    Energy Technology Data Exchange (ETDEWEB)

    Jiang, Junyan; Zhang, Yuantao; Chi, Chen; Yang, Fan; Li, Pengchong [State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Qianjin Street 2699, Changchun 130012 (China); Zhao, Degang [State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Science, PO Box 912, Beijing 100083 (China); Zhang, Baolin; Du, Guotong [State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Qianjin Street 2699, Changchun 130012 (China)

    2016-01-01

    Graphical abstract: - Highlights: • Effects of Mg doping on wet etching of N-polar GaN are illustrated and analysed. • Etching process model of Mg-doped N-polar GaN in KOH solution is purposed. • It is found that Mg doping can induce tensile strain in N-polar GaN film. • N-polar p-GaN film with a hole concentration of 2.4 × 10{sup 17} cm{sup −3} is obtained. - Abstract: KOH based wet etchings were performed on both undoped and Mg-doped N-polar GaN films grown by metal-organic chemical vapor deposition. It is found that the etching rate for Mg-doped N-polar GaN gets slow obviously compared with undoped N-polar GaN. X-ray photoelectron spectroscopy analysis proved that Mg oxide formed on N-polar GaN surface is insoluble in KOH solution so that kinetic-limited etching occurs as the etching process goes on. The etching process model of Mg-doped N-polar GaN in KOH solution is tentatively purposed using a simplified ideal atomic configuration. Raman spectroscopy analysis reveals that Mg doping can induce tensile strain in N-polar GaN films. Meanwhile, p-type N-polar GaN film with a hole concentration of 2.4 × 10{sup 17} cm{sup −3} was obtained by optimizing bis-cyclopentadienyl magnesium flow rates.

  11. Crystal Structures of GaN Nanodots by Nitrogen Plasma Treatment on Ga Metal Droplets

    Directory of Open Access Journals (Sweden)

    Yang-Zhe Su

    2018-06-01

    Full Text Available Gallium nitride (GaN is one of important functional materials for optoelectronics and electronics. GaN exists both in equilibrium wurtzite and metastable zinc-blende structural phases. The zinc-blende GaN has superior electronic and optical properties over wurtzite one. In this report, GaN nanodots can be fabricated by Ga metal droplets in ultra-high vacuum and then nitridation by nitrogen plasma. The size, shape, density, and crystal structure of GaN nanodots can be characterized by transmission electron microscopy. The growth parameters, such as pre-nitridation treatment on Si surface, substrate temperature, and plasma nitridation time, affect the crystal structure of GaN nanodots. Higher thermal energy could provide the driving force for the phase transformation of GaN nanodots from zinc-blende to wurtzite structures. Metastable zinc-blende GaN nanodots can be synthesized by the surface modification of Si (111 by nitrogen plasma, i.e., the pre-nitridation treatment is done at a lower growth temperature. This is because the pre-nitridation process can provide a nitrogen-terminal surface for the following Ga droplet formation and a nitrogen-rich condition for the formation of GaN nanodots during droplet epitaxy. The pre-nitridation of Si substrates, the formation of a thin SiNx layer, could inhibit the phase transformation of GaN nanodots from zinc-blende to wurtzite phases. The pre-nitridation treatment also affects the dot size, density, and surface roughness of samples.

  12. Computational study of GaAs1-xNx and GaN1-yAsy alloys and arsenic impurities in GaN

    International Nuclear Information System (INIS)

    Laaksonen, K; Komsa, H-P; Arola, E; Rantala, T T; Nieminen, R M

    2006-01-01

    We have studied the structural and electronic properties of As-rich GaAs 1-x N x and N-rich GaN 1-y As y alloys in a large composition range using first-principles methods. We have systematically investigated the effect of the impurity atom configuration near both GaAs and GaN sides of the concentration range on the total energies, lattice constants and bandgaps. The N (As) atoms, replacing substitutionally As (N) atoms in GaAs (GaN), cause the surrounding Ga atoms to relax inwards (outwards), making the Ga-N (Ga-As) bond length about 15% shorter (longer) than the corresponding Ga-As (Ga-N) bond length in GaAs (GaN). The total energies of the relaxed alloy supercells and the bandgaps experience large fluctuations within different configurations and these fluctuations grow stronger if the impurity concentration is increased. Substituting As atoms with N in GaAs induces modifications near the conduction band minimum, while substituting N atoms with As in GaN modifies the states near the valence band maximum. Both lead to bandgap reduction, which is at first rapid but later slows down. The relative size of the fluctuations is much larger in the case of GaAs 1-x N x alloys. We have also looked into the question of which substitutional site (Ga or N) As occupies in GaN. We find that under Ga-rich conditions arsenic prefers the substitutional N site over the Ga site within a large range of Fermi level values

  13. Automatic error compensation in dc amplifiers

    International Nuclear Information System (INIS)

    Longden, L.L.

    1976-01-01

    When operational amplifiers are exposed to high levels of neutron fluence or total ionizing dose, significant changes may be observed in input voltages and currents. These changes may produce large errors at the output of direct-coupled amplifier stages. Therefore, the need exists for automatic compensation techniques. However, previously introduced techniques compensate only for errors in the main amplifier and neglect the errors induced by the compensating circuitry. In this paper, the techniques introduced compensate not only for errors in the main operational amplifier, but also for errors induced by the compensation circuitry. Included in the paper is a theoretical analysis of each compensation technique, along with advantages and disadvantages of each. Important design criteria and information necessary for proper selection of semiconductor switches will also be included. Introduced in this paper will be compensation circuitry for both resistive and capacitive feedback networks

  14. Stimulated Brillouin scattering threshold in fiber amplifiers

    International Nuclear Information System (INIS)

    Liang Liping; Chang Liping

    2011-01-01

    Based on the wave coupling theory and the evolution model of the critical pump power (or Brillouin threshold) for stimulated Brillouin scattering (SBS) in double-clad fiber amplifiers, the influence of signal bandwidth, fiber-core diameter and amplifier gain on SBS threshold is simulated theoretically. And experimental measurements of SBS are presented in ytterbium-doped double-clad fiber amplifiers with single-frequency hundred nanosecond pulse amplification. Under different input signal pulses, the forward amplified pulse distortion is observed when the pulse energy is up to 660 nJ and the peak power is up to 3.3 W in the pulse amplification with pulse duration of 200 ns and repetition rate of 1 Hz. And the backward SBS narrow pulse appears. The pulse peak power equals to SBS threshold. Good agreement is shown between the modeled and experimental data. (authors)

  15. Complementary DNA-amplified fragment length polymorphism ...

    African Journals Online (AJOL)

    Complementary DNA-amplified fragment length polymorphism (AFLP-cDNA) analysis of differential gene expression from the xerophyte Ammopiptanthus mongolicus in response to cold, drought and cold together with drought.

  16. Behavior of MOSFET Amplifier in Radiation Fields

    International Nuclear Information System (INIS)

    Sharshar, K.A.A.; Ashry, M.

    2000-01-01

    MOSFET type 2 N 3823 characteristics and its application as an amplifier are analyzed including the effects of gamma, electron beam 1.5 MeV 25 m A and neutron flux. The 1-V characteristics, transfer curve, and the frequency response of the amplifier, and the amplification factor(A v 0 are discussed with MOSFET circuit parameters. The drain current and the amplitude of the output signal decrease as the absorbed dose increases. The measured values of the amplified signal are attenuated by 30% and 6% after exposing the MOSFET to gamma radiation and electron beam at the same dose respectively. Also for exposure to 4x10 13 N/cm 3 neutrons decreased the measured value of the amplified signal by 73% of the initial values. The decrease in the gain of the MOSFET is due to the degradation of the transconductance. It is also noticed that percentage of the decrease depends on the type of radiation

  17. Quantum-Limited Directional Amplifiers with Optomechanics

    Science.gov (United States)

    Malz, Daniel; Tóth, László D.; Bernier, Nathan R.; Feofanov, Alexey K.; Kippenberg, Tobias J.; Nunnenkamp, Andreas

    2018-01-01

    Directional amplifiers are an important resource in quantum-information processing, as they protect sensitive quantum systems from excess noise. Here, we propose an implementation of phase-preserving and phase-sensitive directional amplifiers for microwave signals in an electromechanical setup comprising two microwave cavities and two mechanical resonators. We show that both can reach their respective quantum limits on added noise. In the reverse direction, they emit thermal noise stemming from the mechanical resonators; we discuss how this noise can be suppressed, a crucial aspect for technological applications. The isolation bandwidth in both is of the order of the mechanical linewidth divided by the amplitude gain. We derive the bandwidth and gain-bandwidth product for both and find that the phase-sensitive amplifier has an unlimited gain-bandwidth product. Our study represents an important step toward flexible, on-chip integrated nonreciprocal amplifiers of microwave signals.

  18. Ab initio investigations of the strontium gallium nitride ternaries Sr 3GaN3 and Sr6GaN5: Promising materials for optoelectronic

    KAUST Repository

    Goumri-Said, Souraya

    2013-05-31

    Sr3GaN3 and Sr6GaN5 could be promising potential materials for applications in the microelectronics, optoelectronics and coating materials areas of research. We studied in detail their structural, elastic, electronic, optical as well as the vibrational properties, by means of density functional theory framework. Both of these ternaries are semiconductors, where Sr3GaN3 exhibits a small indirect gap whereas Sr6GaN5 has a large direct gap. Indeed, their optical properties are reported for radiation up to 40 eV. Charge densities contours, Hirshfeld and Mulliken populations, are reported to investigate the role of each element in the bonding. From the mechanical properties calculation, it is found that Sr6GaN5 is harder than Sr3GaN3, and the latter is more anisotropic than the former. The phonon dispersion relation, density of phonon states and the vibrational stability are reported from the density functional perturbation theory calculations. © 2013 IOP Publishing Ltd.

  19. Manhattan equation for the operational amplifier

    OpenAIRE

    Mishonov, Todor M.; Danchev, Victor I.; Petkov, Emil G.; Gourev, Vassil N.; Dimitrova, Iglika M.; Varonov, Albert M.

    2018-01-01

    A differential equation relating the voltage at the output of an operational amplifier $U_0$ and the difference between the input voltages ($U_{+}$ and $U_{-}$) has been derived. The crossover frequency $f_0$ is a parameter in this operational amplifier master equation. The formulas derived as a consequence of this equation find applications in thousands of specifications for electronic devices but as far as we know, the equation has never been published. Actually, the master equation of oper...

  20. Distributed amplifier using Josephson vortex flow transistors

    International Nuclear Information System (INIS)

    McGinnis, D.P.; Beyer, J.B.; Nordman, J.E.

    1986-01-01

    A wide-band traveling wave amplifier using vortex flow transistors is proposed. A vortex flow transistor is a long Josephson junction used as a current controlled voltage source. The dual nature of this device to the field effect transistor is exploited. A circuit model of this device is proposed and a distributed amplifier utilizing 50 vortex flow transistors is predicted to have useful gain to 100 GHz

  1. Multiple excitation regenerative amplifier inertial confinement system

    International Nuclear Information System (INIS)

    George, V.E.; Haas, R.A.; Krupke, W.F.; Schlitt, L.G.

    1980-01-01

    The invention relates to apparatus and methods for producing high intensity laser radiation generation which is achieved through an optical amplifier-storage ring design. One or two synchronized, counterpropagating laser pulses are injected into a regenerative amplifier cavity and amplified by gain media which are pumped repetitively by electrical or optical means. The gain media excitation pulses are tailored to efficiently amplify the laser pulses during each transit. After the laser pulses have been amplified to the desired intensity level, they are either switched out of the cavity by some switch means, as for example an electro-optical device, for any well known laser end uses, or a target means may be injected into the regenerative amplifier cavity in such a way as to intercept simultaneously the counterpropagating laser pulses. One such well known end uses to which this invention is intended is for production of high density and temperature plasmas suitable for generating neutrons, ions and x-rays and for studying matter heated by high intensity laser radiation

  2. Role of Ga vacancies in enhancing the leakage current of GaN Schottky barrier ultraviolet photodetectors

    International Nuclear Information System (INIS)

    De-Gang, Zhao; Shuang, Zhang; Wen-Bao, Liu; De-Sheng, Jiang; Jian-Jun, Zhu; Zong-Shun, Liu; Hui, Wang; Shu-Ming, Zhang; Hui, Yang; Xiao-Peng, Hao; Long, Wei

    2010-01-01

    The leakage current of GaN Schottky barrier ultraviolet photodetectors is investigated. It is found that the photodetectors adopting undoped GaN instead of lightly Si-doped GaN as an active layer show a much lower leakage current even when they have a higher dislocation density. It is also found that the density of Ga vacancies in undoped GaN is much lower than in Si-doped GaN. The Ga vacancies may enhance tunneling and reduce effective Schottky barrier height, leading to an increase of leakage current. It suggests that when undoped GaN is used as the active layer, it is necessary to reduce the leakage current of GaN Schottky barrier ultraviolet photodetector. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  3. Thermal stability study of Cr/Au contact formed on n-type Ga-polar GaN, N-polar GaN, and wet-etched N-polar GaN surfaces

    International Nuclear Information System (INIS)

    Choi, Yunju; Kim, Yangsoo; Ahn, Kwang-Soon; Kim, Hyunsoo

    2014-01-01

    Highlights: • The Cr/Au contact on n-type Ga-polar (0 0 0 1) GaN, N-polar (0 0 0 −1) GaN, and wet-etched N-polar GaN were investigated. • Thermal annealing led to a significant degradation of contact formed on N-polar n-GaN samples. • Contact degradation was shown to be closely related to the increase in the electrical resistivity of n-GaN. • Out-diffusion of Ga and N atoms was clearly observed in N-polar samples. - Abstract: The electrical characteristics and thermal stability of a Cr/Au contact formed on n-type Ga-polar (0 0 0 1) GaN, N-polar GaN, and wet-etched N-polar GaN were investigated. As-deposited Cr/Au showed a nearly ohmic contact behavior for all samples, i.e., the specific contact resistance was 3.2 × 10 −3 , 4.3 × 10 −4 , and 1.1 × 10 −3 Ω cm 2 for the Ga-polar, flat N-polar, and roughened N-polar samples, respectively. However, thermal annealing performed at 250 °C for 1 min in a N 2 ambient led to a significant degradation of contact, i.e., the contact resistance increased by 186, 3260, and 2030% after annealing for Ga-polar, flat N-polar, and roughened N-polar samples, respectively. This could be due to the different disruption degree of Cr/Au and GaN interface after annealing, i.e., the insignificant interfacial reaction occurred in the Ga-polar sample, while out-diffusion of Ga and N atoms was clearly observed in N-polar samples

  4. Thermal stability study of Cr/Au contact formed on n-type Ga-polar GaN, N-polar GaN, and wet-etched N-polar GaN surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Choi, Yunju [School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center, Chonbuk National University, Jeonju 561-756 (Korea, Republic of); Suncheon Center, Korea Basic Science Institute, Suncheon 540-742 (Korea, Republic of); Kim, Yangsoo [Suncheon Center, Korea Basic Science Institute, Suncheon 540-742 (Korea, Republic of); Ahn, Kwang-Soon, E-mail: kstheory@ynu.ac.kr [School of Chemical Engineering, Yeungnam University, Gyeongsan, Gyeongbuk 712-749 (Korea, Republic of); Kim, Hyunsoo, E-mail: hskim7@jbnu.ac.kr [School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center, Chonbuk National University, Jeonju 561-756 (Korea, Republic of)

    2014-10-30

    Highlights: • The Cr/Au contact on n-type Ga-polar (0 0 0 1) GaN, N-polar (0 0 0 −1) GaN, and wet-etched N-polar GaN were investigated. • Thermal annealing led to a significant degradation of contact formed on N-polar n-GaN samples. • Contact degradation was shown to be closely related to the increase in the electrical resistivity of n-GaN. • Out-diffusion of Ga and N atoms was clearly observed in N-polar samples. - Abstract: The electrical characteristics and thermal stability of a Cr/Au contact formed on n-type Ga-polar (0 0 0 1) GaN, N-polar GaN, and wet-etched N-polar GaN were investigated. As-deposited Cr/Au showed a nearly ohmic contact behavior for all samples, i.e., the specific contact resistance was 3.2 × 10{sup −3}, 4.3 × 10{sup −4}, and 1.1 × 10{sup −3} Ω cm{sup 2} for the Ga-polar, flat N-polar, and roughened N-polar samples, respectively. However, thermal annealing performed at 250 °C for 1 min in a N{sub 2} ambient led to a significant degradation of contact, i.e., the contact resistance increased by 186, 3260, and 2030% after annealing for Ga-polar, flat N-polar, and roughened N-polar samples, respectively. This could be due to the different disruption degree of Cr/Au and GaN interface after annealing, i.e., the insignificant interfacial reaction occurred in the Ga-polar sample, while out-diffusion of Ga and N atoms was clearly observed in N-polar samples.

  5. GaN Nanowire Devices: Fabrication and Characterization

    Science.gov (United States)

    Scott, Reum

    The development of microelectronics in the last 25 years has been characterized by an exponential increase of the bit density in integrated circuits (ICs) with time. Scaling solid-state devices improves cost, performance, and power; as such, it is of particular interest for companies, who gain a market advantage with the latest technology. As a result, the microelectronics industry has driven transistor feature size scaling from 10 μm to ~30 nm during the past 40 years. This trend has persisted for 40 years due to optimization, new processing techniques, device structures, and materials. But when noting processor speeds from the 1970's to 2009 and then again in 2010, the implication would be that the trend has ceased. To address the challenge of shrinking the integrated circuit (IC), current research is centered on identifying new materials and devices that can supplement and/or potentially supplant it. Bottom-up methods tailor nanoscale building blocks---atoms, molecules, quantum dots, and nanowires (NWs)---to be used to overcome these limitations. The Group IIIA nitrides (InN, AlN, and GaN) possess appealing properties such as a direct band gap spanning the whole solar spectrum, high saturation velocity, and high breakdown electric field. As a result nanostructures and nanodevices made from GaN and related nitrides are suitable candidates for efficient nanoscale UV/ visible light emitters, detectors, and gas sensors. To produce devices with such small structures new fabrication methods must be implemented. Devices composed of GaN nanowires were fabricated using photolithography and electron beam lithography. The IV characteristics of these devices were noted under different illuminations and the current tripled from 4.8*10-7 A to 1.59*10 -6 A under UV light which persisted for at least 5hrs.

  6. Photoluminescence enhancement from GaN by beryllium doping

    Science.gov (United States)

    García-Gutiérrez, R.; Ramos-Carrazco, A.; Berman-Mendoza, D.; Hirata, G. A.; Contreras, O. E.; Barboza-Flores, M.

    2016-10-01

    High quality Be-doped (Be = 0.19 at.%) GaN powder has been grown by reacting high purity Ga diluted alloys (Be-Ga) with ultra high purity ammonia in a horizontal quartz tube reactor at 1200 °C. An initial low-temperature treatment to dissolve ammonia into the Ga melt produced GaN powders with 100% reaction efficiency. Doping was achieved by dissolving beryllium into the gallium metal. The powders synthesized by this method regularly consist of two particle size distributions: large hollow columns with lengths between 5 and 10 μm and small platelets in a range of diameters among 1 and 3 μm. The GaN:Be powders present a high quality polycrystalline profile with preferential growth on the [10 1 bar 1] plane, observed by means of X-ray diffraction. The three characteristics growth planes of the GaN crystalline phase were found by using high resolution TEM microscopy. The optical enhancing of the emission in the GaN powder is attributed to defects created with the beryllium doping. The room temperature photoluminescence emission spectra of GaN:Be powders, revealed the presence of beryllium on a shoulder peak at 3.39 eV and an unusual Y6 emission at 3.32eV related to surface donor-acceptor pairs. Also, a donor-acceptor-pair transition at 3.17 eV and a phonon replica transition at 3.1 eV were observed at low temperature (10 K). The well-known yellow luminescence band coming from defects was observed in both spectra at room and low temperature. Cathodoluminescence emission from GaN:Be powders presents two main peaks associated with an ultraviolet band emission and the yellow emission known from defects. To study the trapping levels related with the defects formed in the GaN:Be, thermoluminescence glow curves were obtained using UV and β radiation in the range of 50 and 150 °C.

  7. Structural properties of Ne implanted GaN

    Energy Technology Data Exchange (ETDEWEB)

    Majid, A; Zhu, J J; Liu, W; Lu, G J; Liu, W B; Zhang, L Q; Liu, Z S; Wang, H; Zhao, D G; Zhang, S M; Jiang, D S; Wang, Y T; Yang, H [State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083 (China); Ali, A; Israr, M [Advance Materials Physics Laboratory, Physics Department, Quaid-i-Azam University, Islamabad (Pakistan)], E-mail: abdulmajid40@yahoo.com

    2008-03-15

    We report a study on the micro-structural changes in GaN due to neon ion implantation using the x-ray diffraction and Raman scattering techniques. An implantation dose of 10{sup 14} cm{sup -2} was found unable to produce lattice deformation observable by Raman measurements. For higher doses of implantation several disorder activated Raman scattering centers were observed which corroborate the literature. A new dose dependent feature has been recorded at 1595 cm{sup -1} for higher implantation doses which is suggested to be the vibrational mode of microcavities produced in the lattice.

  8. Structural properties of Ne implanted GaN

    International Nuclear Information System (INIS)

    Majid, A; Zhu, J J; Liu, W; Lu, G J; Liu, W B; Zhang, L Q; Liu, Z S; Wang, H; Zhao, D G; Zhang, S M; Jiang, D S; Wang, Y T; Yang, H; Ali, A; Israr, M

    2008-01-01

    We report a study on the micro-structural changes in GaN due to neon ion implantation using the x-ray diffraction and Raman scattering techniques. An implantation dose of 10 14 cm -2 was found unable to produce lattice deformation observable by Raman measurements. For higher doses of implantation several disorder activated Raman scattering centers were observed which corroborate the literature. A new dose dependent feature has been recorded at 1595 cm -1 for higher implantation doses which is suggested to be the vibrational mode of microcavities produced in the lattice

  9. GaN polarity determination by photoelectron diffraction

    Czech Academy of Sciences Publication Activity Database

    Romanyuk, Olexandr; Jiříček, Petr; Paskova, T.; Bieloshapka, Igor; Bartoš, Igor

    2013-01-01

    Roč. 103, č. 9 (2013), "091601-1"-"091601-4" ISSN 0003-6951 R&D Projects: GA ČR(CZ) GBP108/12/G108 Grant - others:AV ČR(CZ) M100101201 Institutional support: RVO:68378271 Keywords : GaN * photoelectron diffraction * wurtzite * surface polarity Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.515, year: 2013 http://apl.aip.org/resource/1/applab/v103/i9/p091601_s1?isAuthorized=no

  10. Characterisation of Cs ion implanted GaN by DLTS

    Science.gov (United States)

    Ngoepe, P. N. M.; Meyer, W. E.; Auret, F. D.; Omotoso, E.; Hlatshwayo, T. T.; Diale, M.

    2018-04-01

    Deep level transient spectroscopy (DLTS) was used to characterise Cs implanted GaN grown by hydride vapour phase epitaxy (HVPE). This implantation was done at room temperature using energy of 360 keV to a fluence of 10-11 cm-2. A defect with activation energy of 0.19 eV below the conduction band and an apparent capture cross section of 1.1 × 10-15 cm2 was induced. This defect has previously been observed after rare earth element (Eu, Er and Pr) implantation. It has also been reported after electron, proton and He ion implantation.

  11. Transport mechanisms in Schottky diodes realized on GaN

    Science.gov (United States)

    Amor, Sarrah; Ahaitouf, Ali; Ahaitouf, Abdelaziz; Salvestrini, Jean Paul; Ougazzaden, Abdellah

    2017-03-01

    This work is focused on the conducted transport mechanisms involved on devices based in gallium nitride GaN and its alloys. With considering all conduction mechanisms of current, its possible to understanded these transport phenomena. Thanks to this methodology the current-voltage characteristics of structures with unusual behaviour are further understood and explain. Actually, the barrier height (SBH) is a complex problem since it depends on several parameters like the quality of the metal-semiconductor interface. This study is particularly interesting as solar cells are made on this material and their qualification is closely linked to their transport properties.

  12. Shape dependent electronic properties of wurzite GaN nanowire

    Energy Technology Data Exchange (ETDEWEB)

    Srivastava, Pankaj, E-mail: pankajs@iiitm.ac.in; Kumar, Avaneesh, E-mail: avaneeshk7@ymail.com; Sharma, Varun, E-mail: sunny2013@gmail.com [Nanomaterials Research Group, ABV-Indian Institute of Information Technology and Management (IIITM), Gwalior-474015 (India); Jaiswal, Neeraj K., E-mail: neerajkumar.phd@gmail.com [Discipline of Physics, PDPM-Indian Institute of Information Technology, Design and Manufacturing (IIITDM), Jabalpur-482005 (India)

    2016-05-06

    In the present work, energetic stability and electronic behavior of triangular and square shaped wurzite GaN NW oriented along [1100] and [11 2 0] direction has been investigated by employing ab-initio DFT calculation. Structural analysis suggests that triangular shaped NW undergoes strong surface reconstruction compared to square shaped NW. However, binding energy reveals that square shaped NW is energetically more feasible than triangular NW. Further, from electronic band structure we observe that both structures are metallic with higher metallicity for triangular shaped NW.

  13. Effect of High-Temperature Annealing on Yellow and Blue Luminescence of Undoped GaN

    International Nuclear Information System (INIS)

    Chai Xu-Zhao; Zhou Dong; Liu Bin; Xie Zi-Li; Han Ping; Xiu Xiang-Qian; Chen Peng; Lu Hai; Zhang Rong; Zheng You-Dou

    2015-01-01

    The effect of high-temperature annealing on the yellow and blue luminescence of the undoped GaN is investigated by photoluminescence (PL) and x-ray photoelectron spectroscopy (XPS). It is found that the band-edge emission in the GaN apparently increases, and the yellow luminescence (YL) and blue luminescence (BL) bands dramatically decrease after annealing at 700°C. At the annealing temperature higher than 900°C, the YL and BL intensities show an enhancement for the nitrogen annealed GaN. This fact should be attributed to the increment of the Ga and N vacancies in the GaN decomposition. However, the integrated PL intensity of the oxygen annealed GaN decreases at the temperature ranging from 900°C to 1000°C. This results from the capture of many photo-generated holes by high-density surface states. XPS characterization confirms that the high-density surface states mainly originate from the incorporation of oxygen atoms into GaN at the high annealing temperature, and even induces the 0.34eV increment of the upward band bending for the oxygen annealed GaN at 1000°C. (paper)

  14. Growth on nonpolar and semipolar GaN: The substrate dilemma

    Energy Technology Data Exchange (ETDEWEB)

    Wernicke, T.; Weyers, M. [Ferdinand-Braun-Institute, Berlin (Germany); Kneissl, M. [Ferdinand-Braun-Institute, Berlin (Germany); Institute of Solid State Physics, TU Berlin (Germany)

    2009-07-01

    Growth of nonpolar and semipolar GaN is very promising for achieving green laser diodes (LDs). However, the choice of the substrate is a difficult one: Heteroepitaxial growth on sapphire, SiC, LiAlO{sub 2} yields GaN films with a poor surface quality and high defect densities. On the other hand non- and semipolar bulk GaN substrates provide excellent crystal quality, but are so far only available in very small sizes. In this paper hetero- and homoepitaxial growth is compared. For all heteroepitaxially grown semi- and nonpolar GaN layers threading dislocations (TD) and basal plane stacking faults (BSF) can be found. There are four possible mechanisms for the generation of BSF: Growth of the N-polar basal plane, formation during nucleation at substrate steps, formation at the coalescence front of differently stacked nucleation islands, and generation at planar defects occurring in m-plane GaN on LiAlO{sub 2}. BSF induce surface roughening and are associated with partial dislocations causing nonradiative recombination. Thus they affect the performance of devices. We show that BSFs and TDs can be reduced by epitaxial lateral overgrowth resulting in several micrometer wide defect free areas. However, for LEDs larger defect-free areas are required. GaN layers grown on bulk GaN substrates exhibit a high crystal quality, but show in many cases long-range surface structures with a height of {approx}1{mu}m.

  15. Determination of carrier diffusion length in p- and n-type GaN

    Science.gov (United States)

    Hafiz, Shopan; Metzner, Sebastian; Zhang, Fan; Monavarian, Morteza; Avrutin, Vitaliy; Morkoç, Hadis; Karbaum, Christopher; Bertram, Frank; Christen, Jürgen; Gil, Bernard; Özgür, Ümit

    2014-03-01

    Diffusion lengths of photo-excited carriers along the c-direction were determined from photoluminescence (PL) measurements in p- and n-type GaN epitaxial layers grown on c-plane sapphire by metal-organic chemical vapor deposition. The investigated samples incorporate a 6 nm thick In0.15Ga0.85N active layer capped with either 500 nm p- GaN or 1300 nm n-GaN. The top GaN layers were etched in steps and PL from the InGaN active region and the underlying layers was monitored as a function of the top GaN thickness upon photogeneration near the surface region by above bandgap excitation. Taking into consideration the absorption in the active and underlying layers, the diffusion lengths at 295 K and at 15 K were measured to be about 92 ± 7 nm and 68 ± 7 nm for Mg-doped p-type GaN and 432 ± 30 nm and 316 ± 30 nm for unintentionally doped n-type GaN, respectively. Cross-sectional cathodoluminescence line-scan measurement was performed on a separate sample and the diffusion length in n-type GaN was measured to be 280 nm.

  16. Kinetic-limited etching of magnesium doping nitrogen polar GaN in potassium hydroxide solution

    Science.gov (United States)

    Jiang, Junyan; Zhang, Yuantao; Chi, Chen; Yang, Fan; Li, Pengchong; Zhao, Degang; Zhang, Baolin; Du, Guotong

    2016-01-01

    KOH based wet etchings were performed on both undoped and Mg-doped N-polar GaN films grown by metal-organic chemical vapor deposition. It is found that the etching rate for Mg-doped N-polar GaN gets slow obviously compared with undoped N-polar GaN. X-ray photoelectron spectroscopy analysis proved that Mg oxide formed on N-polar GaN surface is insoluble in KOH solution so that kinetic-limited etching occurs as the etching process goes on. The etching process model of Mg-doped N-polar GaN in KOH solution is tentatively purposed using a simplified ideal atomic configuration. Raman spectroscopy analysis reveals that Mg doping can induce tensile strain in N-polar GaN films. Meanwhile, p-type N-polar GaN film with a hole concentration of 2.4 ÿ 1017 cm⿿3 was obtained by optimizing bis-cyclopentadienyl magnesium flow rates.

  17. Theoretical study for heterojunction surface of NEA GaN photocathode dispensed with Cs activation

    Science.gov (United States)

    Xia, Sihao; Liu, Lei; Wang, Honggang; Wang, Meishan; Kong, Yike

    2016-09-01

    For the disadvantages of conventional negative electron affinity (NEA) GaN photocathodes activated by Cs or Cs/O, new-type NEA GaN photocathodes with heterojunction surface dispensed with Cs activation are investigated based on first-principle study with density functional theory. Through the growth of an ultrathin n-type GaN cap layer on p-type GaN emission layer, a p-n heterojunction is formed on the surface. According to the calculation results, it is found that Si atoms tend to replace Ga atoms to result in an n-type doped cap layer which contributes to the decreasing of work function. After the growth of n-type GaN cap layer, the atom structure near the p-type emission layer is changed while that away from the surface has no obvious variations. By analyzing the E-Mulliken charge distribution of emission surface with and without cap layer, it is found that the positive charge of Ga and Mg atoms in the emission layer decrease caused by the cap layer, while the negative charge of N atom increases. The conduction band moves downwards after the growth of cap layer. Si atom produces donor levels around the valence band maximum. The absorption coefficient of GaN emission layer decreases and the reflectivity increases caused by n-type GaN cap layer.

  18. Defect formation and magnetic properties of Co-doped GaN crystal and nanowire

    International Nuclear Information System (INIS)

    Shi, Li-Bin; Liu, Jing-Jing; Fei, Ying

    2013-01-01

    Theoretical calculation based on density functional theory (DFT) and generalized gradient approximation (GGA) has been carried out in studying defect formation and magnetic properties of Co doped GaN crystal and nanowire (NW). Co does not exhibit site preference in GaN crystal. However, Co occupies preferably surface sites in GaN NW. Transition level of the defect is also investigated in GaN crystal. We also find that Co Ga (S) in NW does not produce spin polarization and Co Ga (B) produces spontaneous spin polarization. Ferromagnetic (FM) and antiferromagnetic (AFM) couplings are analyzed by six different configurations. The results show that AFM coupling is more stable than FM coupling for Co doped GaN crystal. It is also found from Co doped GaN NW calculation that the system remains FM stability for majority of the configurations. Magnetic properties in Co doped GaN crystal can be mediated by N and Ga vacancies. The FM and AFM stability can be explained by Co 3d energy level coupling

  19. Theoretical investigation of electronic, magnetic and optical properties of Fe doped GaN thin films

    International Nuclear Information System (INIS)

    Salmani, E.; Mounkachi, O.; Ez-Zahraouy, H.; Benyoussef, A.; Hamedoun, M.; Hlil, E.K.

    2013-01-01

    Highlights: •Magnetic and optical properties Fe-doped GaN thin films are studied using DFT. •The band gaps of GaN thin films are larger than the one of the bulk. •The layer thickness and acceptor defect can switch the magnetic ordering. -- Abstract: Using first principles calculations based on spin-polarized density functional theory, the magnetic and optical properties of GaN and Fe-doped GaN thin films with and without acceptor defect is studied. The band structure calculations show that the band gaps of GaN thin films with 2, 4 and 6 layers are larger than the one of the bulk with wurtzite structure and decreases with increasing the film thickness. In Fe doped GaN thin films, we show that layer of thickness and acceptor defect can switch the magnetic ordering from disorder local moment (DLM) to ferromagnetic (FM) order. Without acceptor defect Fe doped GaN exhibits spin glass phase in 4 layers form and ferromagnetic state for 2 layers form of the thin films, while it exhibits ferromagnetic phase with acceptor defect such as vacancies defect for 2 and 4 layers. In the FM ordering, the thin films is half-metallic and is therefore ideal for spin application. The different energy between ferromagnetic state and disorder local moment state was evaluated. Moreover, the optical absorption spectra obtained by ab initio calculations confirm the ferromagnetic stability based on the charge state of magnetic impurities

  20. Polarity analysis of GaN nanorods by photo-assisted Kelvin probe force microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Wei, Jiandong; Neumann, Richard; Wang, Xue; Li, Shunfeng; Fuendling, Soenke; Merzsch, Stephan; Al-Suleiman, Mohamed A.M.; Soekmen, Uensal; Wehmann, Hergo-H.; Waag, Andreas [Institut fuer Halbleitertechnik, TU Braunschweig (Germany)

    2011-07-15

    Polarity dependence (N-polar (000-1) and Ga-polar (0001)) of surface photovoltage of epitaxially grown, vertically aligned GaN nanorods has been investigated by photo-assisted Kelvin probe force microscopy (KPFM). Commercial GaN substrates with known polarities are taken as reference samples. The polarity of GaN substrates can be well distinguished by the change in surface photovoltage upon UV illumination in air ambient. These different behaviors of Ga- and N-polar surfaces are attributed to the polarity-related surface-bound charges and photochemical reactivity. GaN nanorods were grown on patterned SiO{sub 2}/sapphire templates by metal-organic vapor phase epitaxy (MOVPE). In order to analyze the bottom surface of the grown GaN nanorods, a technique known from high power electronics and joining techniques is applied to remove the substrate. The top and bottom surfaces of the GaN nanorods are identified to be N-polar and Ga-polar according to the KPFM results, respectively. Our experiments demonstrate that KPFM is a simple and suitable method capable to identify the polarity of GaN nanorods. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  1. Nanoscratch Characterization of GaN Epilayers on c- and a-Axis Sapphire Substrates

    Directory of Open Access Journals (Sweden)

    Wen Hua-Chiang

    2010-01-01

    Full Text Available Abstract In this study, we used metal organic chemical vapor deposition to form gallium nitride (GaN epilayers on c- and a-axis sapphire substrates and then used the nanoscratch technique and atomic force microscopy (AFM to determine the nanotribological behavior and deformation characteristics of the GaN epilayers, respectively. The AFM morphological studies revealed that pile-up phenomena occurred on both sides of the scratches formed on the GaN epilayers. It is suggested that cracking dominates in the case of GaN epilayers while ploughing during the process of scratching; the appearances of the scratched surfaces were significantly different for the GaN epilayers on the c- and a-axis sapphire substrates. In addition, compared to the c-axis substrate, we obtained higher values of the coefficient of friction (μ and deeper penetration of the scratches on the GaN a-axis sapphire sample when we set the ramped force at 4,000 μN. This discrepancy suggests that GaN epilayers grown on c-axis sapphire have higher shear resistances than those formed on a-axis sapphire. The occurrence of pile-up events indicates that the generation and motion of individual dislocation, which we measured under the sites of critical brittle transitions of the scratch track, resulted in ductile and/or brittle properties as a result of the deformed and strain-hardened lattice structure.

  2. Design and simulation of GaN based Schottky betavoltaic nuclear micro-battery

    International Nuclear Information System (INIS)

    San, Haisheng; Yao, Shulin; Wang, Xiang; Cheng, Zaijun; Chen, Xuyuan

    2013-01-01

    The current paper presents a theoretical analysis of Ni-63 nuclear micro-battery based on a wide-band gap semiconductor GaN thin-film covered with thin Ni/Au films to form Schottky barrier for carrier separation. The total energy deposition in GaN was calculated using Monte Carlo methods by taking into account the full beta spectral energy, which provided an optimal design on Schottky barrier width. The calculated results show that an 8 μm thick Schottky barrier can collect about 95% of the incident beta particle energy. Considering the actual limitations of current GaN growth technique, a Fe-doped compensation technique by MOCVD method can be used to realize the n-type GaN with a carrier concentration of 1×10 15 cm −3 , by which a GaN based Schottky betavoltaic micro-battery can achieve an energy conversion efficiency of 2.25% based on the theoretical calculations of semiconductor device physics. - Highlights: • Ni-63 is employed as the pure beta radioisotope source. • The Schottky junction betavoltaic battery is based on the wide-band gap semiconductor GaN. • The total energy deposition of incident beta particles in GaN was simulated by the Monte Carlo method. • A Fe-doped compensation technique is suggested to increase the energy conversion efficiency

  3. Heteroepitaxial growth of basal plane stacking fault free a-plane GaN

    Energy Technology Data Exchange (ETDEWEB)

    Wieneke, Matthias; Hempel, Thomas; Noltemeyer, Martin; Witte, Hartmut; Dadgar, Armin; Blaesing, Juergen; Christen, Juergen; Krost, Alois [Otto-von-Guericke Universitaet Magdeburg, FNW/IEP, Magdeburg (Germany)

    2010-07-01

    Growth of light emitting quantum-wells based on a-plane GaN is a possibility to reduce or even to avoid polarization correlated luminescence red shift and reduction of radiative recombination efficiency. But until now heteroepitaxially grown a-plane GaN films are characterized by a poor crystalline quality expressed by a high density of basal plane stacking faults (BSF) and partial dislocations. We present Si doped a-plane GaN films grown on r-plane sapphire substrates by metal organic vapor phase epitaxy using high temperature AlGaN nucleation layers. FE-SEM images revealed three dimensionally grown GaN crystallites sized up to tenth micrometer in the basal plane and a few tenth micrometers along the c-axes. Though, the full width at half maxima of the X-ray diffraction {omega}-scans of the in-plane GaN(1 anti 100) and GaN(0002) Bragg reflections exhibited a very high crystal quality. Furthermore, luminescence spectra were dominated by near band gap emission, while there was no separated peak of the basal plane stacking fault. In summary we present heteroepitaxially grown a-plane GaN without an evidence of basal plane stacking faults in X-ray diffraction measurements and luminescence spectra.

  4. High-quality GaN epitaxially grown on Si substrate with serpentine channels

    Science.gov (United States)

    Wei, Tiantian; Zong, Hua; Jiang, Shengxiang; Yang, Yue; Liao, Hui; Xie, Yahong; Wang, Wenjie; Li, Junze; Tang, Jun; Hu, Xiaodong

    2018-06-01

    A novel serpentine-channeled mask was introduced to Si substrate for low-dislocation GaN epitaxial growth and the fully coalesced GaN film on the masked Si substrate was achieved for the first time. Compared with the epitaxial lateral overgrowth (ELOG) growth method, this innovative mask only requires one-step epitaxial growth of GaN which has only one high-dislocation region per mask opening. This new growth method can effectively reduce dislocation density, thus improving the quality of GaN significantly. High-quality GaN with low dislocation density ∼2.4 × 107 cm-2 was obtained, which accounted for about eighty percent of the GaN film in area. This innovative technique is promising for the growth of high-quality GaN templates and the subsequent fabrication of high-performance GaN-based devices like transistors, laser diodes (LDs), and light-emitting diodes (LEDs) on Si substrate.

  5. Ga vacancy induced ferromagnetism enhancement and electronic structures of RE-doped GaN

    International Nuclear Information System (INIS)

    Zhong Guohua; Zhang Kang; He Fan; Ma Xuhang; Lu Lanlan; Liu Zhuang; Yang Chunlei

    2012-01-01

    Because of their possible applications in spintronic and optoelectronic devices, GaN dilute magnetic semiconductors (DMSs) doped by rare-earth (RE) elements have attracted much attention since the high Curie temperature was obtained in RE-doped GaN DMSs and a colossal magnetic moment was observed in the Gd-doped GaN thin film. We have systemically studied the GaN DMSs doped by RE elements (La, Ce-Yb) using the full-potential linearized augmented plane wave method within the framework of density functional theory and adding the considerations of the electronic correlation and the spin-orbital coupling effects. We have studied the electronic structures of DMSs, especially for the contribution from f electrons. The origin of magnetism, magnetic interaction and the possible mechanism of the colossal magnetic moment were explored. We found that, for materials containing f electrons, electronic correlation was usually strong and the spin-orbital coupling was sometimes crucial in determining the magnetic ground state. It was found that GaN doped by La was non-magnetic. GaN doped by Ce, Nd, Pm, Eu, Gd, Tb and Tm are stabilized at antiferromagnetic phase, while GaN doped by other RE elements show strong ferromagnetism which is suitable materials for spintronic devices. Moreover, we have identified that the observed large enhancement of magnetic moment in GaN is mainly caused by Ga vacancies (3.0μB per Ga vacancy), instead of the spin polarization by magnetic ions or originating from N vacancies. Various defects, such as substitutional Mg for Ga, O for N under the RE doping were found to bring a reduction of ferromagnetism. In addition, intermediate bands were observed in some systems of GaN:RE and GaN with intrinsic defects, which possibly opens the potential application of RE-doped semiconductors in the third generation high efficiency photovoltaic devices.

  6. Ab initio-based approach to reconstruction, adsorption and incorporation on GaN surfaces

    International Nuclear Information System (INIS)

    Ito, T; Akiyama, T; Nakamura, K

    2012-01-01

    Reconstruction, adsorption and incorporation on various GaN surfaces are systematically investigated using an ab initio-based approach that predicts the surface phase diagram as functions of temperature and beam-equivalent pressure (BEP). The calculated results for GaN surface reconstructions with polar (0 0 0 1), nonpolar (1 1 −2 0), semipolar (1 −1 0 1) and semipolar (1 1 −2 2) orientations imply that reconstructions on GaN surfaces with Ga adlayers generally appear on the polar and the semipolar surfaces, while the stable ideal surface without Ga adsorption is found on the nonpolar GaN(1 1 −2 0) surface because it satisfies the electron counting rule. The hydrogen adsorption on GaN(0 0 0 1) and GaN(1 1 −2 0) realizes several surface structures forming N–H and Ga–NH 2 bonds on their surfaces that depend on temperature and Ga BEP during metal-organic vapor-phase epitaxy (MOVPE). In contrast, the stable structures due to hydrogen adsorption on the semipolar GaN(1 −1 0 1) and GaN(1 1 −2 2) surfaces are not varied over the wide range of temperature and Ga BEP. This implies that the hydrogen adsorbed stable structures are expected to emerge on the semipolar surfaces during MOVPE regardless of the growth conditions. Furthermore, we clarify that Mg incorporation on GaN(1 −1 0 1) surfaces is enhanced by hydrogen adsorption consistent with experimental findings

  7. III-nitride Photonic Integrated Circuit: Multi-section GaN Laser Diodes for Smart Lighting and Visible Light Communication

    KAUST Repository

    Shen, Chao

    2017-04-01

    The past decade witnessed the rapid development of III-nitride light-emitting diodes (LEDs) and laser diodes (LDs), for smart lighting, visible-light communication (VLC), optical storage, and internet-of-things. Recent studies suggested that the GaN-based LDs, which is free from efficiency droop, outperform LEDs as a viable high-power light source. Conventionally, the InGaN-based LDs are grown on polar, c-plane GaN substrates. However, a relatively low differential gain limited the device performance due to a significant polarization field in the active region. Therefore, the LDs grown on nonpolar m-plane and semipolar (2021)-plane GaN substrates are posed to deliver high-efficiency owing to the entirely or partially eliminated polarization field. To date, the smart lighting and VLC functionalities have been demonstrated based on discrete devices, such as LDs, transverse-transmission modulators, and waveguide photodetectors. The integration of III-nitride photonic components, including the light emitter, modulator, absorber, amplifier, and photodetector, towards the realization of III-nitride photonic integrated circuit (PIC) offers the advantages of small-footprint, high-speed, and low power consumption, which has yet to be investigated. This dissertation presents the design, fabrication, and characterization of the multi-section InGaN laser diodes with integrated functionalities on semipolar (2021)-plane GaN substrates for enabling such photonic integration. The blue-emitting integrated waveguide modulator-laser diode (IWM-LD) exhibits a high modulation efficiency of 2.68 dB/V. A large extinction ratio of 11.3 dB is measured in the violet-emitting IWM-LD. Utilizing an integrated absorber, a high optical power (250mW), droop-free, speckle-free, and large modulation bandwidth (560MHz) blue-emitting superluminescent diode is reported. An integrated short-wavelength semiconductor optical amplifier with the laser diode at ~404 nm is demonstrated with a large gain of 5

  8. Magneto-ballistic transport in GaN nanowires

    International Nuclear Information System (INIS)

    Santoruvo, Giovanni; Allain, Adrien; Ovchinnikov, Dmitry; Matioli, Elison

    2016-01-01

    The ballistic filtering property of nanoscale crosses was used to investigate the effect of perpendicular magnetic fields on the ballistic transport of electrons on wide band-gap GaN heterostructures. The straight scattering-less trajectory of electrons was modified by a perpendicular magnetic field which produced a strong non-linear behavior in the measured output voltage of the ballistic filters and allowed the observation of semi-classical and quantum effects, such as quenching of the Hall resistance and manifestation of the last plateau, in excellent agreement with the theoretical predictions. A large measured phase coherence length of 190 nm allowed the observation of universal quantum fluctuations and weak localization of electrons due to quantum interference up to ∼25 K. This work also reveals the prospect of wide band-gap GaN semiconductors as a platform for basic transport and quantum studies, whose properties allow the investigation of ballistic transport and quantum phenomena at much larger voltages and temperatures than in other semiconductors.

  9. Magneto-ballistic transport in GaN nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Santoruvo, Giovanni, E-mail: giovanni.santoruvo@epfl.ch; Allain, Adrien; Ovchinnikov, Dmitry; Matioli, Elison, E-mail: elison.matioli@epfl.ch [Ecole Polytechnique Fédérale de Lausanne (EPFL), CH 1015 Lausanne (Switzerland)

    2016-09-05

    The ballistic filtering property of nanoscale crosses was used to investigate the effect of perpendicular magnetic fields on the ballistic transport of electrons on wide band-gap GaN heterostructures. The straight scattering-less trajectory of electrons was modified by a perpendicular magnetic field which produced a strong non-linear behavior in the measured output voltage of the ballistic filters and allowed the observation of semi-classical and quantum effects, such as quenching of the Hall resistance and manifestation of the last plateau, in excellent agreement with the theoretical predictions. A large measured phase coherence length of 190 nm allowed the observation of universal quantum fluctuations and weak localization of electrons due to quantum interference up to ∼25 K. This work also reveals the prospect of wide band-gap GaN semiconductors as a platform for basic transport and quantum studies, whose properties allow the investigation of ballistic transport and quantum phenomena at much larger voltages and temperatures than in other semiconductors.

  10. Size dictated thermal conductivity of GaN

    Science.gov (United States)

    Beechem, Thomas E.; McDonald, Anthony E.; Fuller, Elliot J.; Talin, A. Alec; Rost, Christina M.; Maria, Jon-Paul; Gaskins, John T.; Hopkins, Patrick E.; Allerman, Andrew A.

    2016-09-01

    The thermal conductivity of n- and p-type doped gallium nitride (GaN) epilayers having thicknesses of 3-4 μm was investigated using time domain thermoreflectance. Despite possessing carrier concentrations ranging across 3 decades (1015-1018 cm-3), n-type layers exhibit a nearly constant thermal conductivity of 180 W/mK. The thermal conductivity of p-type epilayers, in contrast, reduces from 160 to 110 W/mK with increased doping. These trends—and their overall reduction relative to bulk—are explained leveraging established scattering models where it is shown that, while the decrease in p-type layers is partly due to the increased impurity levels evolving from its doping, size effects play a primary role in limiting the thermal conductivity of GaN layers tens of microns thick. Device layers, even of pristine quality, will therefore exhibit thermal conductivities less than the bulk value of 240 W/mK owing to their finite thickness.

  11. Radiotracer Spectroscopy on Group II Acceptors in GaN

    CERN Multimedia

    2002-01-01

    The semiconductor GaN is already used for the production of high power light emitting diodes in the blue and UV spectral range. But the $\\rho$-type doping, which is usually obtained by Mg doping, is still inefficient due to compensation and passivation effects caused by defects present in the material. It is theoretically predicted, that Be is a more promising candidate for $\\rho$-doping with a lower ionization energy of 60meV. It is our goal to investigate the electrical and optical properties of Be- and Mg-related defects in GaN to clarify the problem of compensation and passivation. The used methods are standard spectroscopic methods in semiconductor physics which are improved by using radioactive isotopes. The radioactive decay of $^{7}$Be and $^{28}$Mg is used to clearly correlate different signals with Be or Mg related defects. We intend to use the spectroscopic techniques Deep Level Transient Spectroscopy (DLTS), Thermal Admittance Spectroscopy (TAS), photoluminescence (PL) and additionally Hall-effect...

  12. Atomic layer deposition of GaN at low temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Ozgit, Cagla; Donmez, Inci; Alevli, Mustafa; Biyikli, Necmi [UNAM - Institute of Materials Science and Nanotechnology, Bilkent University, 06800 Ankara (Turkey)

    2012-01-15

    The authors report on the self-limiting growth of GaN thin films at low temperatures. Films were deposited on Si substrates by plasma-enhanced atomic layer deposition using trimethylgallium (TMG) and ammonia (NH{sub 3}) as the group-III and -V precursors, respectively. GaN deposition rate saturated at 185 deg. C for NH{sub 3} doses starting from 90 s. Atomic layer deposition temperature window was observed from 185 to {approx}385 deg. C. Deposition rate, which is constant at {approx}0.51 A/cycle within the temperature range of 250 - 350 deg. C, increased slightly as the temperature decreased to 185 deg. C. In the bulk film, concentrations of Ga, N, and O were constant at {approx}36.6, {approx}43.9, and {approx}19.5 at. %, respectively. C was detected only at the surface and no C impurities were found in the bulk film. High oxygen concentration in films was attributed to the oxygen impurities present in group-V precursor. High-resolution transmission electron microscopy studies revealed a microstructure consisting of small crystallites dispersed in an amorphous matrix.

  13. Electronic Transport Mechanism for Schottky Diodes Formed by Au/HVPE a-Plane GaN Templates Grown via In Situ GaN Nanodot Formation

    Directory of Open Access Journals (Sweden)

    Moonsang Lee

    2018-06-01

    Full Text Available We investigate the electrical characteristics of Schottky contacts for an Au/hydride vapor phase epitaxy (HVPE a-plane GaN template grown via in situ GaN nanodot formation. Although the Schottky diodes present excellent rectifying characteristics, their Schottky barrier height and ideality factor are highly dependent upon temperature variation. The relationship between the barrier height, ideality factor, and conventional Richardson plot reveals that the Schottky diodes exhibit an inhomogeneous barrier height, attributed to the interface states between the metal and a-plane GaN film and to point defects within the a-plane GaN layers grown via in situ nanodot formation. Also, we confirm that the current transport mechanism of HVPE a-plane GaN Schottky diodes grown via in situ nanodot formation prefers a thermionic field emission model rather than a thermionic emission (TE one, implying that Poole–Frenkel emission dominates the conduction mechanism over the entire range of measured temperatures. The deep-level transient spectroscopy (DLTS results prove the presence of noninteracting point-defect-assisted tunneling, which plays an important role in the transport mechanism. These electrical characteristics indicate that this method possesses a great throughput advantage for various applications, compared with Schottky contact to a-plane GaN grown using other methods. We expect that HVPE a-plane GaN Schottky diodes supported by in situ nanodot formation will open further opportunities for the development of nonpolar GaN-based high-performance devices.

  14. Highly c-axis oriented growth of GaN film on sapphire (0001 by laser molecular beam epitaxy using HVPE grown GaN bulk target

    Directory of Open Access Journals (Sweden)

    S. S. Kushvaha

    2013-09-01

    Full Text Available Growth temperature dependant surface morphology and crystalline properties of the epitaxial GaN layers grown on pre-nitridated sapphire (0001 substrates by laser molecular beam epitaxy (LMBE were investigated in the range of 500–750 °C. The grown GaN films were characterized using high resolution x-ray diffraction, atomic force microscopy (AFM, micro-Raman spectroscopy, and secondary ion mass spectroscopy (SIMS. The x-ray rocking curve full width at a half maximum (FWHM value for (0002 reflection dramatically decreased from 1582 arc sec to 153 arc sec when the growth temperature was increased from 500 °C to 600 °C and the value further decreased with increase of growth temperature up to 720 °C. A highly c-axis oriented GaN epitaxial film was obtained at 720 °C with a (0002 plane rocking curve FWHM value as low as 102 arc sec. From AFM studies, it is observed that the GaN grain size also increased with increasing growth temperature and flat, large lateral grains of size 200-300 nm was obtained for the film grown at 720 °C. The micro-Raman spectroscopy studies also exhibited the high-quality wurtzite nature of GaN film grown on sapphire at 720 °C. The SIMS measurements revealed a non-traceable amount of background oxygen impurity in the grown GaN films. The results show that the growth temperature strongly influences the surface morphology and crystalline quality of the epitaxial GaN films on sapphire grown by LMBE.

  15. Advances in high-power rf amplifiers

    International Nuclear Information System (INIS)

    Tallerico, P.J.

    1979-01-01

    Several powerful accelerators and storage rings are being considered that will require tens or even hundreds of megawatts of continuous rf power. The economics of such large machines can be dictated by the cost and efficiency of the rf amplifiers. The overall design and performance of such narrow-band amplifiers, operating in the 50- to 1500-MHz region, are being theoretically studied as a function of frequency to determine the optimum rf amplifier output power, gain, efficiency, and dc power requirements. The state of the art for three types of amplifiers (gridded tubes, klystrons, and gyrocons) is considered and the development work necessary to improve each is discussed. The gyrocon is a new device, hence its various embodiments are discussed in detail. The Soviet designs are reviewed and the gyrocon's strengths and weaknesses are compared to other types of microwave amplifiers. The primary advantages of the gyrocon are the very large amount of power available from a single device and the excellent efficiency and stable operation. The klystron however, has much greater gain and is simpler mechanically. At very low frequencies, the small size of the gridded tube makes it the optimum choice for all but the most powerful systems

  16. Transpermeance Amplifier Applied to Magnetic Bearings

    Directory of Open Access Journals (Sweden)

    Jossana Ferreira

    2017-02-01

    Full Text Available The most conventional approach of controlling magnetic forces in active magnetic bearings (AMBs is through current feedback amplifiers: transconductance. This enables the operation of the AMB to be understood in terms of a relatively simple current-based model as has been widely reported on in the literature. The alternative notion of using transpermeance amplifiers, which approximate the feedback of gap flux rather than current, has been in commercial use in some form for at least thirty years, however is only recently seeing more widespread acceptance as a commercial standard. This study explores how such alternative amplifiers should be modeled and then examines the differences in behavior between AMBs equipped with transconductance and transpermeance amplifiers. The focus of this study is on two aspects. The first is the influence of rotor displacement on AMB force, commonly modeled as a constant negative equivalent mechanical stiffness, and it is shown that either scheme actually leads to a finite bandwidth effect, but that this bandwidth is much lower when transpermeance is employed. The second aspect is the influence of eddy currents. Using a very simple model of eddy currents (a secondary short-circuited coil, it is demonstrated that transpermeance amplifiers can recover significant actuator bandwidth compared with transconductance, but at the cost of needing increased peak current headroom.

  17. Modification of GaN(0001) growth kinetics by Mg doping

    International Nuclear Information System (INIS)

    Monroy, E.; Andreev, T.; Holliger, P.; Bellet-Amalric, E.; Shibata, T.; Tanaka, M.; Daudin, B.

    2004-01-01

    We have studied the effect of Mg doping on the surface kinetics of GaN during growth by plasma-assisted molecular-beam epitaxy. Mg tends to segregate on the surface of GaN, inhibiting the formation of the self-regulated Ga film which is used as a surfactant for the growth of undoped and Si-doped GaN. The growth window is hence significantly reduced. Higher growth temperatures lead to an enhancement of Mg segregation and an improvement of the surface morphology

  18. Redshift of A 1(longitudinal optical) mode for GaN crystals under strong electric field

    Science.gov (United States)

    Gu, Hong; Wu, Kaijie; Zheng, Shunan; Shi, Lin; Zhang, Min; Liu, Zhenghui; Liu, Xinke; Wang, Jianfeng; Zhou, Taofei; Xu, Ke

    2018-01-01

    We investigated the property of GaN crystals under a strong electric field. The Raman spectra of GaN were measured using an ultraviolet laser, and a remarkable redshift of the A 1(LO) mode was observed. The role of the surface depletion layer was discussed, and the interrelation between the electric field and phonons was revealed. First-principles calculations indicated that, in particular, the phonons that vibrate along the [0001] direction are strongly influenced by the electric field. This effect was confirmed by a surface photovoltage experiment. The results revealed the origin of the redshift and presented the phonon property of GaN under a strong electric field.

  19. Photoassisted Kelvin probe force microscopy at GaN surfaces: The role of polarity

    Science.gov (United States)

    Wei, J. D.; Li, S. F.; Atamuratov, A.; Wehmann, H.-H.; Waag, A.

    2010-10-01

    The behavior of GaN surfaces during photoassisted Kelvin probe force microscopy is demonstrated to be strongly dependant on surface polarity. The surface photovoltage of GaN surfaces illuminated with above-band gap light is analyzed as a function of time and light intensity. Distinct differences between Ga-polar and N-polar surfaces could be identified, attributed to photoinduced chemisorption of oxygen during illumination. These differences can be used for a contactless, nondestructive, and easy-performable analysis of the polarity of GaN surfaces.

  20. Electron holography studies of the charge on dislocations in GaN

    Energy Technology Data Exchange (ETDEWEB)

    Cherns, D.; Jiao, C.G.; Mokhtari, H. [H.H. Wills Physics Laboratory, University of Bristol, Tyndall Avenue, Bristol BS8 1TL (United Kingdom); Cai, J.; Ponce, F.A. [Department of Physics and Astronomy, Arizona State University, Tempe, AZ85287 (United States)

    2002-12-01

    The measurement of charge on dislocations in GaN by electron holography is described. Recent results are presented showing that edge dislocations in n-doped GaN are highly negatively charged, whereas those in p-doped GaN are positively charged. It is shown that the results are consistent with a model which assumes Fermi level pinning at dislocation states about 2.5 V below the conduction band edge. The application of electron holography to screw dislocations, and the dependence of the observations on the dislocation core structure, are also discussed. (Abstract Copyright [2002], Wiley Periodicals, Inc.)

  1. Real time ellipsometry for monitoring plasma-assisted epitaxial growth of GaN

    Energy Technology Data Exchange (ETDEWEB)

    Bruno, Giovanni [Institute of Inorganic Methodologies and of Plasmas, IMIP-CNR and INSTM UdR Bari, via Orabona, 4, 70126 Bari (Italy); Losurdo, Maria [Institute of Inorganic Methodologies and of Plasmas, IMIP-CNR and INSTM UdR Bari, via Orabona, 4, 70126 Bari (Italy)]. E-mail: maria.losurdo@ba.imip.cnr.it; Giangregorio, Maria M. [Institute of Inorganic Methodologies and of Plasmas, IMIP-CNR and INSTM UdR Bari, via Orabona, 4, 70126 Bari (Italy); Capezzuto, Pio [Institute of Inorganic Methodologies and of Plasmas, IMIP-CNR and INSTM UdR Bari, via Orabona, 4, 70126 Bari (Italy); Brown, April S. [Department of Electrical and Computer Engineering, Duke University, 128 Hudson Hall, Durham, NC (United States); Kim, Tong-Ho [Department of Electrical and Computer Engineering, Duke University, 128 Hudson Hall, Durham, NC (United States); Choi, Soojeong [Department of Electrical and Computer Engineering, Duke University, 128 Hudson Hall, Durham, NC (United States)

    2006-10-31

    GaN is grown on Si-face 4H-SiC(0 0 0 1) substrates using remote plasma-assisted methods including metalorganic chemical vapour deposition (RP-MOCVD) and molecular beam epitaxy (MBE). Real time spectroscopic ellipsometry is used for monitoring all the steps of substrate pre-treatments and the heteroepitaxial growth of GaN on SiC. Our characterization emphasis is on understanding the nucleation mechanism and the GaN growth mode, which depend on the SiC surface preparation.

  2. Wideband Low Noise Amplifiers Exploiting Thermal Noise Cancellation

    NARCIS (Netherlands)

    Bruccoleri, F.; Klumperink, Eric A.M.; Nauta, Bram

    2005-01-01

    Low Noise Amplifiers (LNAs) are commonly used to amplify signals that are too weak for direct processing for example in radio or cable receivers. Traditionally, low noise amplifiers are implemented via tuned amplifiers, exploiting inductors and capacitors in resonating LC-circuits. This can render

  3. Solid-state disk amplifiers for fusion-laser systems

    Energy Technology Data Exchange (ETDEWEB)

    Martin, W.E.; Trenholme, J.B.; Linford, G.J.; Yarema, S.M.; Hurley, C.A.

    1981-09-01

    We review the design, performance, and operation of large-aperture (10 to 46 cm) solid-state disk amplifiers for use in laser systems. We present design data, prototype tests, simulations, and projections for conventional cylindrical pump-geometry amplifiers and rectangular pump-geometry disk amplifiers. The design of amplifiers for the Nova laser system is discussed.

  4. The design of high performance weak current integrated amplifier

    International Nuclear Information System (INIS)

    Chen Guojie; Cao Hui

    2005-01-01

    A design method of high performance weak current integrated amplifier using ICL7650 operational amplifier is introduced. The operating principle of circuits and the step of improving amplifier's performance are illustrated. Finally, the experimental results are given. The amplifier has programmable measurement range of 10 -9 -10 -12 A, automatic zero-correction, accurate measurement, and good stability. (authors)

  5. Power Amplifiers in CMOS Technology: A contribution to power amplifier theory and techniques

    NARCIS (Netherlands)

    Acar, M.

    2011-01-01

    In order to meet the demands from the market on cheaper, miniaturized mobile communications devices realization of RF power amplifiers in the mainstream CMOS technology is essential. In general, CMOS Power Amplifiers (PAs) require high voltage to decrease the matching network losses and for high

  6. Design considerations for RF power amplifiers demonstrated through a GSM/EDGE power amplifier module

    NARCIS (Netherlands)

    Baltus, P.G.M.; Bezooijen, van A.; Huijsing, J.H.; Steyaert, M.; Roermund, van A.H.M.

    2002-01-01

    This paper describes the design considerations for RF power amplifiers in general, including trends in systems, linearity and efficiency, the PA environment, implementation is sues and technology. As an example a triple-band (900/1800/1900MHz) dual mode (GSMIEdge) power amplifier module is described

  7. Fabrication of GaN epitaxial thin film on InGaZnO4 single-crystalline buffer layer

    International Nuclear Information System (INIS)

    Shinozaki, Tomomasa; Nomura, Kenji; Katase, Takayoshi; Kamiya, Toshio; Hirano, Masahiro; Hosono, Hideo

    2010-01-01

    Epitaxial (0001) films of GaN were grown on (111) YSZ substrates using single-crystalline InGaZnO 4 (sc-IGZO) lattice-matched buffer layers by molecular beam epitaxy with a NH 3 source. The epitaxial relationships are (0001) GaN //(0001) IGZO //(111) YSZ in out-of-plane and [112-bar 0] GaN //[112-bar 0] IGZO //[11-bar 0] YSZ in in-plane. This is different from those reported for GaN on many oxide crystals; the in-plane orientation of GaN crystal lattice is rotated by 30 o with respect to those of oxide substrates except for ZnO. Although these GaN films showed relatively large tilting and twisting angles, which would be due to the reaction between GaN and IGZO, the GaN films grown on the sc-IGZO buffer layers exhibited stronger band-edge photoluminescence than GaN grown on a low-temperature GaN buffer layer.

  8. MOCVD growth of GaN layer on InN interlayer and relaxation of residual strain

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Keon-Hun; Park, Sung Hyun; Kim, Jong Hack; Kim, Nam Hyuk; Kim, Min Hwa [Department of Materials Science and Engineering, Seoul National University, Seoul, 151-742 (Korea, Republic of); Na, Hyunseok [Department of Advanced Materials Science and Engineering, Daejin University, Pocheon, 487-711 (Korea, Republic of); Yoon, Euijoon, E-mail: eyoon@snu.ac.k [Department of Materials Science and Engineering, Seoul National University, Seoul, 151-742 (Korea, Republic of); Department of Nano Science and Technology, Graduate School of Convergence Science and Technology, Seoul National University, Suwon 433-270 (Korea, Republic of)

    2010-09-01

    100 nm InN layer was grown on sapphire c-plane using a metal-organic chemical vapor deposition (MOCVD) system. Low temperature (LT) GaN layer was grown on InN layer to protect InN layer from direct exposure to hydrogen flow during high temperature (HT) GaN growth and/or abrupt decomposition. Subsequently, thick HT GaN layer (2.5 {mu}m thick) was grown at 1000 {sup o}C on LT GaN/InN/sapphire template. Microstructure of epilayer-substrate interface was investigated by transmission electron microscopy (TEM). From the high angle annular dark field TEM image, the growth of columnar structured LT GaN and HT GaN with good crystallinity was observed. Though thickness of InN interlayer is assumed to be about 100 nm based on growth rate, it was not clearly shown in TEM image due to the InN decomposition. The lattice parameters of GaN layers were measured by XRD measurement, which shows that InN interlayer reduces the compressive strain in GaN layer. The relaxation of compressive strain in GaN layer was also confirmed by photoluminescence (PL) measurement. As shown in the PL spectra, red shift of GaN band edge peak was observed, which indicates the reduction of compressive strain in GaN epilayer.

  9. Wideband pulse amplifiers for the NECTAr chip

    Science.gov (United States)

    Sanuy, A.; Delagnes, E.; Gascon, D.; Sieiro, X.; Bolmont, J.; Corona, P.; Feinstein, F.; Glicenstein, J.-F.; Naumann, C. L.; Nayman, P.; Ribó, M.; Tavernet, J.-P.; Toussenel, F.; Vincent, P.; Vorobiov, S.

    2012-12-01

    The NECTAr collaboration's FE option for the camera of the CTA is a 16 bits and 1-3 GS/s sampling chip based on analog memories including most of the readout functions. This works describes the input amplifiers of the NECTAr ASIC. A fully differential wideband amplifier, with voltage gain up to 20 V/V and a BW of 400 MHz. As it is impossible to design a fully differential OpAmp with an 8 GHz GBW product in a 0.35 CMOS technology, an alternative implementation based on HF linearized transconductors is explored. The output buffer is a class AB miller operational amplifier, with special non-linear current boost.

  10. Wideband pulse amplifiers for the NECTAr chip

    International Nuclear Information System (INIS)

    Sanuy, A.; Delagnes, E.; Gascon, D.; Sieiro, X.; Bolmont, J.; Corona, P.; Feinstein, F.; Glicenstein, J-F.; Naumann, C.L.; Nayman, P.; Ribó, M.

    2012-01-01

    The NECTAr collaboration's FE option for the camera of the CTA is a 16 bits and 1–3 GS/s sampling chip based on analog memories including most of the readout functions. This works describes the input amplifiers of the NECTAr ASIC. A fully differential wideband amplifier, with voltage gain up to 20 V/V and a BW of 400 MHz. As it is impossible to design a fully differential OpAmp with an 8 GHz GBW product in a 0.35 CMOS technology, an alternative implementation based on HF linearized transconductors is explored. The output buffer is a class AB miller operational amplifier, with special non-linear current boost.

  11. Wideband pulse amplifiers for the NECTAr chip

    Energy Technology Data Exchange (ETDEWEB)

    Sanuy, A., E-mail: asanuy@ecm.ub.es [Dept. AM i Dept. ECM, Institut de Ciencies del Cosmos (ICC), Universitat de Barcelona. Marti i Franques 1, E08028, Barcelona (Spain); Delagnes, E. [IRFU/DSM/CEA, CE-Saclay, Bat. 141 SEN Saclay, F-91191, Gif-sur-Yvette (France); Gascon, D. [Dept. AM i Dept. ECM, Institut de Ciencies del Cosmos (ICC), Universitat de Barcelona. Marti i Franques 1, E08028, Barcelona (Spain); Sieiro, X. [Departament d' Electronica, Universitat de Barcelona. Marti i Franques 1, E08028, Barcelona (Spain); Bolmont, J.; Corona, P. [LPNHE, Universite Paris VI and Universite Paris VII and IN2P3/CNRS, Barre 12-22, 1er etage, 4 place Jussieu, 75252 Paris (France); Feinstein, F. [LUPM, Universite Montpellier II and IN2P3/CNRS, CC072, bat. 13, place Eugene Bataillon, 34095 Montpellier (France); Glicenstein, J-F. [IRFU/DSM/CEA, CE-Saclay, Bat. 141 SEN Saclay, F-91191, Gif-sur-Yvette (France); Naumann, C.L.; Nayman, P. [LPNHE, Universite Paris VI and Universite Paris VII and IN2P3/CNRS, Barre 12-22, 1er etage, 4 place Jussieu, 75252 Paris (France); Ribo, M. [Dept. AM i Dept. ECM, Institut de Ciencies del Cosmos (ICC), Universitat de Barcelona. Marti i Franques 1, E08028, Barcelona (Spain); and others

    2012-12-11

    The NECTAr collaboration's FE option for the camera of the CTA is a 16 bits and 1-3 GS/s sampling chip based on analog memories including most of the readout functions. This works describes the input amplifiers of the NECTAr ASIC. A fully differential wideband amplifier, with voltage gain up to 20 V/V and a BW of 400 MHz. As it is impossible to design a fully differential OpAmp with an 8 GHz GBW product in a 0.35 CMOS technology, an alternative implementation based on HF linearized transconductors is explored. The output buffer is a class AB miller operational amplifier, with special non-linear current boost.

  12. An automated test facility for neutronic amplifiers

    International Nuclear Information System (INIS)

    Beattie, W.J.

    1997-01-01

    Neutronic amplifiers are used at the Chalk River Laboratory in applications such as neutron flux monitoring and reactor control systems. Routine preventive maintenance of control and safety systems included annual calibration and characterization of the neutronic amplifiers. An investigation into the traditional methods of annual routine maintenance of amplifiers concluded that frequency and phase response measurements in particular were labour intensive and subject to non-repeatable errors. A decision was made to upgrade testing methods and facilities by using programmable test equipment under the control of a computer. In order to verify the results of the routine measurements, expressions for the transfer functions were derived from the circuit diagrams. Frequency and phase responses were then calculated and plotted thus providing a bench-mark to which the test results can be compared. (author)

  13. A high-efficiency superconductor distributed amplifier

    Energy Technology Data Exchange (ETDEWEB)

    Herr, Q P, E-mail: quentin.herr@ngc.co [Northrop Grumman Corporation, 7323 Aviation Boulevard, Baltimore, MD 21240 (United States)

    2010-02-15

    A superconductor output amplifier that converts single-flux-quantum signals to a non-return-to-zero pattern is reported using a twelve-stage distributed amplifier configuration. The output amplitude is measured to be 1.75 mV over a wide bias current range of {+-} 12%. The bit error rate is measured using a Delta-Sigma data pattern to be less than 1 x 10{sup -9} at 10 Gb s{sup -1} per channel. Analysis of the eye diagram suggests that the actual bit error rate may be much lower. The amplifier has power efficiency of 12% neglecting the termination resistor, which may be eliminated from the circuit with a small modification. (rapid communication)

  14. Hexagonal (wurtzite) GaN inclusions as a defect in cubic (zinc-blende) GaN

    International Nuclear Information System (INIS)

    Zainal, N.; Novikov, S.V.; Akimov, A.V.; Staddon, C.R.; Foxon, C.T.; Kent, A.J.

    2012-01-01

    The dependence of the hexagonal fraction with thickness in MBE-grown bulk cubic (c-) GaN epilayer is presented in this paper. A number of c-GaN epilayers with different thicknesses were characterized via PL and XRD measurements. From the PL spectra, the signal due to h-GaN inclusions increases as the thickness of the c-GaN increases. On the contrary, in the XRD diffractogram, c-GaN shows a dominant signal at all thicknesses, and only a weak peak at ∼35° is observed in the diffractogram, implying the existence of a small amount of h-GaN in the c-GaN layer. The best quality of c-GaN is observed in the first 10 μm of GaN on the top of GaAs substrate. Even though the hexagonal content increases with the thickness, the average content remains below 20% in c-GaN layers up to 50 μm thick. The surface morphology of thick c-GaN is also presented.

  15. Noise figure of amplified dispersive Fourier transformation

    International Nuclear Information System (INIS)

    Goda, Keisuke; Jalali, Bahram

    2010-01-01

    Amplified dispersive Fourier transformation (ADFT) is a powerful tool for fast real-time spectroscopy as it overcomes the limitations of traditional optical spectrometers. ADFT maps the spectrum of an optical pulse into a temporal waveform using group-velocity dispersion and simultaneously amplifies it in the optical domain. It greatly simplifies spectroscopy by replacing the diffraction grating and detector array in the conventional spectrometer with a dispersive fiber and single-pixel photodetector, enabling ultrafast real-time spectroscopic measurements. Following our earlier work on the theory of ADFT, here we study the effect of noise on ADFT. We derive the noise figure of ADFT and discuss its dependence on various parameters.

  16. Predistortion of a Bidirectional Cuk Audio Amplifier

    DEFF Research Database (Denmark)

    Birch, Thomas Hagen; Nielsen, Dennis; Knott, Arnold

    2014-01-01

    Some non-linear amplifier topologies are capable of providing a larger voltage gain than one from a DC source, which could make them suitable for various applications. However, the non-linearities introduce a significant amount of harmonic distortion (THD). Some of this distortion could be reduced...... using predistortion. This paper suggests linearizing a nonlinear bidirectional Cuk audio amplifier using an analog predistortion approach. A prototype power stage was built and results show that a voltage gain of up to 9 dB and reduction in THD from 6% down to 3% was obtainable using this approach....

  17. Cryogenic transimpedance amplifier for micromechanical capacitive sensors.

    Science.gov (United States)

    Antonio, D; Pastoriza, H; Julián, P; Mandolesi, P

    2008-08-01

    We developed a cryogenic transimpedance amplifier that works at a broad range of temperatures, from room temperature down to 4 K. The device was realized with a standard complementary metal oxide semiconductor 1.5 mum process. Measurements of current-voltage characteristics, open-loop gain, input referred noise current, and power consumption are presented as a function of temperature. The transimpedance amplifier has been successfully applied to sense the motion of a polysilicon micromechanical oscillator at low temperatures. The whole device is intended to serve as a magnetometer for microscopic superconducting samples.

  18. Dynamic range meter for radiofrequency amplifiers

    Directory of Open Access Journals (Sweden)

    Drozd S. S.

    2009-04-01

    Full Text Available The new measurement setup having increased on 20…30 dB the own dynamic range in comparison with the standard circuit of the dynamic range meter is offered and the rated value of an error bringing by setup in the worst case does not exceed ± 2,8 dB. The measurement setup can be applied also to determinate levels of intermodulation components average power amplifiers and powerful amplifiers of a low-frequency at replacement of the quartz filter on meeting low-frequency the LC-filter and the spectrum analyzer.

  19. Optimization of a high efficiency FEL amplifier

    International Nuclear Information System (INIS)

    Schneidmiller, E.A.; Yurkov, M.V.

    2014-10-01

    The problem of an efficiency increase of an FEL amplifier is now of great practical importance. Technique of undulator tapering in the post-saturation regime is used at the existing X-ray FELs LCLS and SACLA, and is planned for use at the European XFEL, Swiss FEL, and PAL XFEL. There are also discussions on the future of high peak and average power FELs for scientific and industrial applications. In this paper we perform detailed analysis of the tapering strategies for high power seeded FEL amplifiers. Application of similarity techniques allows us to derive universal law of the undulator tapering.

  20. Operational amplifier circuits analysis and design

    CERN Document Server

    Nelson, J C C

    1995-01-01

    This book, a revised and updated version of the author's Basic Operational Amplifiers (Butterworths 1986), enables the non-specialist to make effective use of readily available integrated circuit operational amplifiers for a range of applications, including instrumentation, signal generation and processing.It is assumed the reader has a background in the basic techniques of circuit analysis, particularly the use of j notation for reactive circuits, with a corresponding level of mathematical ability. The underlying theory is explained with sufficient but not excessive, detail. A range of compu

  1. Cavity enhanced rephased amplified spontaneous emission

    International Nuclear Information System (INIS)

    A Williamson, Lewis; J Longdell, Jevon

    2014-01-01

    Amplified spontaneous emission is usually treated as an incoherent noise process. Recent theoretical and experimental work using rephasing optical pulses has shown that rephased amplified spontaneous emission (RASE) is a potential source of wide bandwidth time-delayed entanglement. Due to poor echo efficiency the plain RASE protocol does not in theory achieve perfect entanglement. Experiments done to date show a very small amount of entanglement at best. Here we show that RASE can, in principle, produce perfect multimode time-delayed two mode squeezing when the active medium is placed inside a Q-switched cavity. (paper)

  2. Growth of β-Ga2O3 and GaN nanowires on GaN for photoelectrochemical hydrogen generation

    International Nuclear Information System (INIS)

    Hwang, Jih-Shang; Liu, Tai-Yan; Chen, Han-Wei; Chattopadhyay, Surjit; Hsu, Geng-Ming; Basilio, Antonio M; Hsu, Yu-Kuei; Tu, Wen-Hsun; Lin, Yan-Gu; Chen, Kuei-Hsien; Li, Chien-Cheng; Wang, Sheng-Bo; Chen, Hsin-Yi; Chen, Li-Chyong

    2013-01-01

    Enhanced photoelectrochemical (PEC) performances of Ga 2 O 3 and GaN nanowires (NWs) grown in situ from GaN were demonstrated. The PEC conversion efficiencies of Ga 2 O 3 and GaN NWs have been shown to be 0.906% and 1.09% respectively, in contrast to their 0.581% GaN thin film counterpart under similar experimental conditions. A low crystallinity buffer layer between the grown NWs and the substrate was found to be detrimental to the PEC performance, but the layer can be avoided at suitable growth conditions. A band bending at the surface of the GaN NWs generates an electric field that drives the photogenerated electrons and holes away from each other, preventing recombination, and was found to be responsible for the enhanced PEC performance. The enhanced PEC efficiency of the Ga 2 O 3 NWs is aided by the optical absorption through a defect band centered 3.3 eV above the valence band of Ga 2 O 3 . These findings are believed to have opened up possibilities for enabling visible absorption, either by tailoring ion doping into wide bandgap Ga 2 O 3 NWs, or by incorporation of indium to form InGaN NWs. (paper)

  3. Growth of β-Ga2O3 and GaN nanowires on GaN for photoelectrochemical hydrogen generation.

    Science.gov (United States)

    Hwang, Jih-Shang; Liu, Tai-Yan; Chattopadhyay, Surjit; Hsu, Geng-Ming; Basilio, Antonio M; Chen, Han-Wei; Hsu, Yu-Kuei; Tu, Wen-Hsun; Lin, Yan-Gu; Chen, Kuei-Hsien; Li, Chien-Cheng; Wang, Sheng-Bo; Chen, Hsin-Yi; Chen, Li-Chyong

    2013-02-08

    Enhanced photoelectrochemical (PEC) performances of Ga(2)O(3) and GaN nanowires (NWs) grown in situ from GaN were demonstrated. The PEC conversion efficiencies of Ga(2)O(3) and GaN NWs have been shown to be 0.906% and 1.09% respectively, in contrast to their 0.581% GaN thin film counterpart under similar experimental conditions. A low crystallinity buffer layer between the grown NWs and the substrate was found to be detrimental to the PEC performance, but the layer can be avoided at suitable growth conditions. A band bending at the surface of the GaN NWs generates an electric field that drives the photogenerated electrons and holes away from each other, preventing recombination, and was found to be responsible for the enhanced PEC performance. The enhanced PEC efficiency of the Ga(2)O(3) NWs is aided by the optical absorption through a defect band centered 3.3 eV above the valence band of Ga(2)O(3). These findings are believed to have opened up possibilities for enabling visible absorption, either by tailoring ion doping into wide bandgap Ga(2)O(3) NWs, or by incorporation of indium to form InGaN NWs.

  4. Ultralow threading dislocation density in GaN epilayer on near-strain-free GaN compliant buffer layer and its applications in hetero-epitaxial LEDs.

    Science.gov (United States)

    Shih, Huan-Yu; Shiojiri, Makoto; Chen, Ching-Hsiang; Yu, Sheng-Fu; Ko, Chung-Ting; Yang, Jer-Ren; Lin, Ray-Ming; Chen, Miin-Jang

    2015-09-02

    High threading dislocation (TD) density in GaN-based devices is a long unresolved problem because of the large lattice mismatch between GaN and the substrate, which causes a major obstacle for the further improvement of next-generation high-efficiency solid-state lighting and high-power electronics. Here, we report InGaN/GaN LEDs with ultralow TD density and improved efficiency on a sapphire substrate, on which a near strain-free GaN compliant buffer layer was grown by remote plasma atomic layer deposition. This "compliant" buffer layer is capable of relaxing strain due to the absorption of misfit dislocations in a region within ~10 nm from the interface, leading to a high-quality overlying GaN epilayer with an unusual TD density as low as 2.2 × 10(5) cm(-2). In addition, this GaN compliant buffer layer exhibits excellent uniformity up to a 6" wafer, revealing a promising means to realize large-area GaN hetero-epitaxy for efficient LEDs and high-power transistors.

  5. Design of Low Inductance Switching Power Cell for GaN HEMT Based Inverter

    DEFF Research Database (Denmark)

    Gurpinar, Emre; Iannuzzo, Francesco; Yang, Yongheng

    2018-01-01

    . The design of gate drivers for the GaN HEMT devices is presented. Parasitic inductance and resistance of the proposed design are extracted with finite element analysis and discussed. Common-mode behaviours based on the SPICE model of the converter are analyzed. Experimental results on the designed 3L......In this paper, an ultra-low inductance power cell is designed for a three-Level Active Neutral Point Clamped (3LANPC) based on 650 V gallium nitride (GaN) HEMT devices. The 3L-ANPC topology with GaN HEMT devices and the selected modulation scheme suitable for wide-bandgap (WBG) devices...... are presented. The commutation loops, which mainly contribute to voltage overshoots and increase of switching losses, are discussed. The ultra-low inductance power cell design based on a four-layer Printed Circuit Board (PCB) with the aim to maximize the switching performance of GaN HEMTs is explained...

  6. GaN nano-membrane for optoelectronic and electronic device applications

    KAUST Repository

    Ooi, Boon S.

    2014-01-01

    The ~25nm thick threading dislocation free GaN nanomembrane was prepared using ultraviolet electroless chemical etching method offering the possibility of flexible integration of (Al,In,Ga)N optoelectronic and electronic devices.

  7. 380 keV proton irradiation effects on photoluminescence of Eu-doped GaN

    International Nuclear Information System (INIS)

    Okada, Hiroshi; Nakanishi, Yasuo; Wakahara, Akihiro; Yoshida, Akira; Ohshima, Takeshi

    2008-01-01

    The effect of 380 keV proton irradiation on the photoluminescence (PL) properties has been investigated for undoped and Eu-doped GaN. As the proton irradiation exceeds 1x10 13 cm -2 , a drastic decrease of PL intensity of the near band-edge emission of undoped GaN was observed. On the other hand, for Eu-doped GaN, the PL emission corresponding to the 5 D 0 → 7 F 2 transition in Eu 3+ kept the initial PL intensity after the proton irradiation up to 1x10 14 cm -2 . Present results, together with our previous report on electron irradiation results, suggest that Eu-doped GaN is a strong candidate for light emitting devices in high irradiation environment

  8. The GaN trench gate MOSFET with floating islands: High breakdown voltage and improved BFOM

    Science.gov (United States)

    Shen, Lingyan; Müller, Stephan; Cheng, Xinhong; Zhang, Dongliang; Zheng, Li; Xu, Dawei; Yu, Yuehui; Meissner, Elke; Erlbacher, Tobias

    2018-02-01

    A novel GaN trench gate (TG) MOSFET with P-type floating islands (FLI) in drift region, which can suppress the electric field peak at bottom of gate trench during the blocking state and prevent premature breakdown in gate oxide, is proposed and investigated by TCAD simulations. The influence of thickness, position, doping concentration and length of the FLI on breakdown voltage (BV) and specific on-resistance (Ron_sp) is studied, providing useful guidelines for design of this new type of device. Using optimized parameters for the FLI, GaN FLI TG-MOSFET obtains a BV as high as 2464 V with a Ron_sp of 3.0 mΩ cm2. Compared to the conventional GaN TG-MOSFET with the same structure parameters, the Baliga figure of merit (BFOM) is enhanced by 150%, getting closer to theoretical limit for GaN devices.

  9. Electronic structure and optical properties of Al and Mg co-doped GaN

    International Nuclear Information System (INIS)

    Ji Yan-Jun; Du Yu-Jie; Wang Mei-Shan

    2013-01-01

    The electronic structure and optical properties of Al and Mg co-doped GaN are calculated from first principles using density function theory with the plane-wave ultrasoft pseudopotential method. The results show that the optimal form of p-type GaN is obtained with an appropriate Al:Mg co-doping ratio rather than with only Mg doping. Al doping weakens the interaction between Ga and N, resulting in the Ga 4s states moving to a high energy region and the system band gap widening. The optical properties of the co-doped system are calculated and compared with those of undoped GaN. The dielectric function of the co-doped system is anisotropic in the low energy region. The static refractive index and reflectivity increase, and absorption coefficient decreases. This provides the theoretical foundation for the design and application of Al—Mg co-doped GaN photoelectric materials

  10. Above room-temperature ferromagnetism of Mn delta-doped GaN nanorods

    International Nuclear Information System (INIS)

    Lin, Y. T.; Wadekar, P. V.; Kao, H. S.; Chen, T. H.; Chen, Q. Y.; Tu, L. W.; Huang, H. C.; Ho, N. J.

    2014-01-01

    One-dimensional nitride based diluted magnetic semiconductors were grown by plasma-assisted molecular beam epitaxy. Delta-doping technique was adopted to dope GaN nanorods with Mn. The structural and magnetic properties were investigated. The GaMnN nanorods with a single crystalline structure and with Ga sites substituted by Mn atoms were verified by high-resolution x-ray diffraction and Raman scattering, respectively. Secondary phases were not observed by high-resolution x-ray diffraction and high-resolution transmission electron microscopy. In addition, the magnetic hysteresis curves show that the Mn delta-doped GaN nanorods are ferromagnetic above room temperature. The magnetization with magnetic field perpendicular to GaN c-axis saturates easier than the one with field parallel to GaN c-axis

  11. Effects of hydrogen on Mn-doped GaN: A first principles calculation

    International Nuclear Information System (INIS)

    Wu, M.S.; Xu, B.; Liu, G.; Lei, X.L.; Ouyang, C.Y.

    2013-01-01

    First-principles calculations based on spin density functional theory are performed to study the effects of H on the structural, electronic and magnetic properties of the Mn-doped GaN dilute magnetic semiconductors. Our results show that the interstitial H atom prefers to bond with N atom rather than Mn atom, which means that H favors to form the N–H complex rather than Mn–H complex in the Mn-doped GaN. After introducing one H atom in the system, the total magnetic moment of the Mn-doped GaN increases by 25%, from 4.0μ B to 5.0μ B . The physics mechanism of the increase of magnetic moment after hydrogenation in Mn-doped GaN is discussed

  12. Thermodynamic analysis of Mg-doped p-type GaN semiconductor

    International Nuclear Information System (INIS)

    Li Jingbo; Liang Jingkui; Rao Guanghui; Zhang Yi; Liu Guangyao; Chen Jingran; Liu Quanlin; Zhang Weijing

    2006-01-01

    A thermodynamic modeling of Mg-doped p-type GaN was carried out to describe the thermodynamic behaviors of native defects, dopants (Mg and H) and carriers in GaN. The formation energies of charged component compounds in a four-sublattice model were defined as functions of the Fermi-level based on the results of the first-principles calculations and adjusted to fit experimental data. The effect of the solubility of Mg on the low doping efficiency of Mg in GaN and the role of H in the Mg-doping MOCVD process were discussed. The modeling provides a thermodynamic approach to understand the doping process of GaN semiconductors

  13. Bulk GaN Schottky Diodes for Millimeter Wave Frequency Multipliers, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — Within the context of this project, White Light Power Inc. (WLPI) will demonstrate the feasibility of using vertical GaN Schottky diodes for high-power rectification...

  14. Study on the influence of annealing effects in GaN VPE

    International Nuclear Information System (INIS)

    Furtado, M.

    1983-06-01

    The effects of annealing that occur during VPE growth of GaN were investigated. GaN powder (and epilayers) samples were annealed in Ar, N 2 , H 2 , NH 3 , HC1 + N 2 and HC1 + H 2 (N 2 , H 2 and HC1 + N 2 ), respectively; under a range of experimental conditions of interest for preparing electroluminescent devices. Good surface appearence Zn doped epilayers were also used under N 2 in order to investigate surface morphology changes due to thermal decomposition. It was found that GaN reacts with H 2 , remains stable under NH 3 , and the effects of thermal decomposition are somewhat enhanced with HC1. The epilayers' behaviour under thermal decomposition and HC1 are interpreted by the greater stability of the (0001) crystal plane, which accounts for the improvement of the surface quality under special growth conditions. Significant observations are reported concerning GaN decomposition in different ambients [pt

  15. Bulk GaN Schottky Diodes for Millimeter Wave Frequency Multipliers, Phase II

    Data.gov (United States)

    National Aeronautics and Space Administration — Within the context of this project, White Light Power Inc. (WLPI) will demonstrate prototype vertical GaN Schottky diodes for high-power rectification at W-band. To...

  16. Development of Epitaxial GaN Films for RF Communications, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — The primary objective of this SBIR is to develop epitaxial GaN films with threading dislocation density less than 10^6 cm^-2. We propose an innovative approach...

  17. Efficient light extraction from GaN LEDs using gold-coated ZnO nanoparticles

    KAUST Repository

    Alhadidi, A.

    2015-11-01

    We experimentally demonstrate the effect of depositing gold-coated ZnO nanoparticles on the surface of GaN multi-quantum well LED structures. We show that this method can significantly increase the amount of extracted light.

  18. Formation of helical dislocations in ammonothermal GaN substrate by heat treatment

    International Nuclear Information System (INIS)

    Horibuchi, Kayo; Yamaguchi, Satoshi; Kimoto, Yasuji; Nishikawa, Koichi; Kachi, Tetsu

    2016-01-01

    GaN substrate produced by the basic ammonothermal method and an epitaxial layer on the substrate was evaluated using synchrotron radiation x-ray topography and transmission electron microscopy. We revealed that the threading dislocations present in the GaN substrate are deformed into helical dislocations and the generation of the voids by heat treatment in the substrate for the first observation in the GaN crystal. These phenomena are formed by the interactions between the dislocations and vacancies. The helical dislocation was formed in the substrate region, and not in the epitaxial layer region. Furthermore, the evaluation of the influence of the dislocations on the leakage current of Schottky barrier diodes fabricated on the epitaxial layer is discussed. The dislocations did not affect the leakage current characteristics of the epitaxial layer. Our results suggest that the deformation of dislocations in the GaN substrate does not adversely affect the epitaxial layer. (paper)

  19. N-polar GaN epitaxy and high electron mobility transistors

    International Nuclear Information System (INIS)

    Wong, Man Hoi; Keller, Stacia; Dasgupta, Nidhi Sansaptak; Denninghoff, Daniel J; Kolluri, Seshadri; Brown, David F; Lu, Jing; Fichtenbaum, Nicholas A; Ahmadi, Elaheh; DenBaars, Steven P; Speck, James S; Mishra, Umesh K; Singisetti, Uttam; Chini, Alessandro; Rajan, Siddharth

    2013-01-01

    This paper reviews the progress of N-polar (0001-bar) GaN high frequency electronics that aims at addressing the device scaling challenges faced by GaN high electron mobility transistors (HEMTs) for radio-frequency and mixed-signal applications. Device quality (Al, In, Ga)N materials for N-polar heterostructures are developed using molecular beam epitaxy and metalorganic chemical vapor deposition. The principles of polarization engineering for designing N-polar HEMT structures will be outlined. The performance, scaling behavior and challenges of microwave power devices as well as highly-scaled depletion- and enhancement-mode devices employing advanced technologies including self-aligned processes, n+ (In,Ga)N ohmic contact regrowth and high aspect ratio T-gates will be discussed. Recent research results on integrating N-polar GaN with Si for prospective novel applications will also be summarized. (invited review)

  20. Tuning electronic and magnetic properties of GaN nanosheets by surface modifications and nanosheet thickness.

    Science.gov (United States)

    Xiao, Meixia; Yao, Tingzhen; Ao, Zhimin; Wei, Peng; Wang, Danghui; Song, Haiyang

    2015-04-14

    Density-functional theory calculations are performed to investigate the effects of surface modifications and nanosheet thickness on the electronic and magnetic properties of gallium nitride (GaN) nanosheets (NSs). Unlike the bare GaN NSs terminating with polar surfaces, the systems with hydrogenated Ga (H-GaN), fluorinated Ga (F-GaN), and chlorinated Ga (Cl-GaN) preserve their initial wurtzite structures and exhibit ferromagnetic states. The abovementioned three different decorations on Ga atoms are energetically more favorable for thicker GaN NSs. Moreover, as the thickness increases, H-GaN and F-GaN NSs undergo semiconductor to metal and half-metal to metal transition, respectively, while Cl-GaN NSs remain completely metallic. The predicted diverse and tunable electronic and magnetic properties highlight the potential of GaN NSs for novel electronic and spintronic nanodevices.

  1. Fabrication of a Lateral Polarity GaN MESFET: An Exploratory Study

    National Research Council Canada - National Science Library

    Sitar, Zlatko; Collazo, Ramon

    2007-01-01

    This report describes exploratory studies in the fabrication of the GaN LPH structures and their application in the fabrication of a depletion-mode metal semiconductor field effect transistors (MESFETs...

  2. Robust Visible and Infrared Light Emitting Devices Using Rare-Earth-Doped GaN

    National Research Council Canada - National Science Library

    Steckl, Andrew

    2006-01-01

    Rare earth (RE) dopants (such as Er, Eu, Tm) in the wide bandgap semiconductor (WBGS) GaN are investigated for the fabrication of robust visible and infrared light emitting devices at a variety of wavelengths...

  3. Thermal Quenching of Photoluminescence from Er-Doped GaN Thin Films

    National Research Council Canada - National Science Library

    Seo, J. T; Hoemmerich, U; Lee, D. C; Heikenfeld, J; Steckl, A. J; Zavada, J. M

    2002-01-01

    The green (537 and 558 nm) and near infrared (1.54 micrometers) photoluminescence (PL) spectra of Er-doped GaN thin films have been investigated as a function of temperature, excitation wavelength, and pump intensity...

  4. Effect of Optical Excitation Energy on the Red Luminescence of Eu(3+) in GaN

    National Research Council Canada - National Science Library

    Peng, H. Y; Lee, C. W; Everitt, H. O; Lee, D. S; Steckl, A. J; Zavada, J. M

    2005-01-01

    ...)] transition from GaN:Eu. Time-resolved PL measurements revealed that for excitation at the GaN bound exciton energy, the decay transients are almost temperature insensitive between 86 K and 300 K, indicating an efficient...

  5. THE PHOTOELECTROCHEMICAL ETCHING AS A TOOL FOR GaN GAS SENSOR FABRICATION

    OpenAIRE

    V.Iu. Popa

    2005-01-01

    Whisker and columnar structures of GaN were fabricated using photoelectrochemical etching in KOH solution. The conductivity changes of the obtained structures to ethylic alcohol and hydrogen were studied. Optimized design for sensor fabrication is proposed.

  6. Energy Assisted Epitaxy of GaN Using a Low Flux Nitrogen Atom Source

    National Research Council Canada - National Science Library

    Myers, Thomas

    1997-01-01

    .... The grant was successful in all three areas. As detailed in this report, we have performed high quality research on fundamental issues of growth in GaN, a strategic material, in addition to training many students...

  7. Surface States Effect on the Large Photoluminescence Redshift in GaN Nanostructures

    KAUST Repository

    Ben Slimane, Ahmed; Najar, Adel; Ooi, Boon S.; Shen, Chao; Anjum, Dalaver H.; San-Romá n-Alerigi, Damiá n P.; Ng, Tien Khee

    2013-01-01

    We report on the large photoluminescence redshift observed in nanostructures fabricated using n-type GaN by ultraviolet (UV) metal-assisted electroless chemical-etching method. The scanning electron microscopy (SEM) characterization showed

  8. Surface chemistry and electronic structure of nonpolar and polar GaN films

    Energy Technology Data Exchange (ETDEWEB)

    Mishra, Monu; Krishna, T.C. Shibin; Aggarwal, Neha; Gupta, Govind, E-mail: govind@nplindia.org

    2015-08-01

    Highlights: • Surface chemistry and electronic structure of polar and nonpolar GaN is reported. • Influence of polarization on electron affinity of p & np GaN films is investigated. • Correlation between surface morphology and polarity has been deduced. - Abstract: Photoemission and microscopic analysis of nonpolar (a-GaN/r-Sapphire) and polar (c-GaN/c-Sapphire) epitaxial gallium nitride (GaN) films grown via RF-Molecular Beam Epitaxy is reported. The effect of polarization on surface properties like surface states, electronic structure, chemical bonding and morphology has been investigated and correlated. It was observed that polarization lead to shifts in core level (CL) as well as valence band (VB) spectra. Angle dependent X-ray Photoelectron Spectroscopic analysis revealed higher surface oxide in polar GaN film compared to nonpolar GaN film. On varying the take off angle (TOA) from 0° to 60°, the Ga−O/Ga−N ratio varied from 0.11–0.23 for nonpolar and 0.17–0.36 for polar GaN film. The nonpolar film exhibited N-face polarity while Ga-face polarity was perceived in polar GaN film due to the inherent polarization effect. Polarization charge compensated surface states were observed on the polar GaN film and resulted in downward band bending. Ultraviolet photoelectron spectroscopic measurements revealed electron affinity and ionization energy of 3.4 ± 0.1 eV and 6.8 ± 0.1 eV for nonpolar GaN film and 3.8 ± 0.1 eV and 7.2 ± 0.1 eV for polar GaN film respectively. Field Emission Scanning Electron Microscopy measurements divulged smooth morphology with pits on polar GaN film. The nonpolar film on the other hand showed pyramidal structures having facets all over the surface.

  9. Evidence for moving of threading dislocations during the VPE growth in GaN thin layers

    Energy Technology Data Exchange (ETDEWEB)

    Kuwano, Noriyuki [Art, Science and Technology Center for Cooperative Research, Kyushu University, Kasuga, Fukuoka 816-8580 (Japan); Department of Applied Science for Electronics and Materials, Kyushu University, Kasuga, Fukuoka 816-8580 (Japan); Miyake, Hideto; Hiramatsu, Kazumasa [Department of Electrical and Electronic Engineering, Mie University, Tsu, Mie 514-8507 (Japan); Amano, Hiroshi [Graduate School of Engineering, Akasaki Research Center, Nagoya University, Furo-cho, Chikusa, Nagoya 464-8603 (Japan); Akasaki, Isamu [Faculty of Science and Technology, Meijo University, 1-501 Shiogamaguchi, Tempaku, Nagoya 468-8502 (Japan)

    2011-05-15

    Cross-sectional transmission electron microscope (TEM) observation was performed in detail to analyze the morphology of threading dislocations (TDs) in GaN thin layers with various thicknesses. The GaN layers were overgrown on an Al{sub 0.28}Ga{sub 0.72}N layer by the metal-organic vapor-phase epitaxy (MOVPE) method. In a GaN layer about 50 nm in thickness, TDs running up in the AlGaN layer pass into the GaN layer and most of them reach the top surface without bending. In thicker GaN layers, on the other hand, many of TDs form a hairpin-configuration on or above the interface of GaN and AlGaN to be annihilated. This difference in morphology of TDs indicates that the TDs have moved down inside the GaN layer. Since the formation of hairpins is attributed to a stress-relief, there should be an extra half-plane between the paired TDs. Therefore, the movement of TDs should be of ''climb motion''. Another example of possible TD movement inside a GaN layer is also described. It is emphasized that the possibility of TD-movements inside the thin film crystal during the growth should be taken into account in analysis of thin-layer growth through the behavior of TDs (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  10. Fabrication of high quality GaN nanopillar arrays by dry and wet chemical etching

    OpenAIRE

    Paramanik, Dipak; Motayed, Abhishek; King, Matthew; Ha, Jong-Yoon; Kryluk, Sergi; Davydov, Albert V.; Talin, Alec

    2013-01-01

    We study strain relaxation and surface damage of GaN nanopillar arrays fabricated using inductively coupled plasma (ICP) etching and post etch wet chemical treatment. We controlled the shape and surface damage of such nanopillar structures through selection of etching parameters. We compared different substrate temperatures and different chlorine-based etch chemistries to fabricate high quality GaN nanopillars. Room temperature photoluminescence and Raman scattering measurements were carried ...

  11. Characterization of an Mg-implanted GaN p-i-n Diode

    Science.gov (United States)

    2016-03-31

    Characterization of an Mg- implanted GaN p-i-n Diode Travis J. Anderson, Jordan D. Greenlee, Boris N. Feigelson, Karl D. Hobart, and Francis J...Kub Naval Research Laboratory, Washington, DC 20375 Abstract: A p-i-n diode formed by the implantation of Mg in GaN was fabricated and...characterized. After implantation , Mg was activated using the symmetrical multicycle rapid thermal annealing technique with heating pulses up to 1340C

  12. Identification of deep levels in GaN associated with dislocations

    International Nuclear Information System (INIS)

    Soh, C B; Chua, S J; Lim, H F; Chi, D Z; Liu, W; Tripathy, S

    2004-01-01

    To establish a correlation between dislocations and deep levels in GaN, a deep-level transient spectroscopy study has been carried out on GaN samples grown by metalorganic chemical vapour deposition. In addition to typical undoped and Si-doped GaN samples, high-quality crack-free undoped GaN film grown intentionally on heavily doped cracked Si-doped GaN and cracked AlGaN templates are also chosen for this study. The purpose of growth of such continuous GaN layers on top of the cracked templates is to reduce the screw dislocation density by an order of magnitude. Deep levels in these layers have been characterized and compared with emphasis on their thermal stabilities and capture kinetics. Three electron traps at E c -E T ∼0.10-0.11, 0.24-0.27 and 0.59-0.63 eV are detected common to all the samples while additional levels at E c -E T ∼0.18 and 0.37-0.40 eV are also observed in the Si-doped GaN. The trap levels exhibit considerably different stabilities under rapid thermal annealing. Based on the observations, the trap levels at E c -E T ∼0.18 and 0.24-0.27 eV can be associated with screw dislocations, whereas the level at E c -E T ∼0.59-0.63 eV can be associated with edge dislocations. This is also in agreement with the transmission electron microscopy measurements conducted on the GaN samples

  13. P- and N-type implantation doping of GaN with Ca and O

    International Nuclear Information System (INIS)

    Zolper, J.C.; Wilson, R.G.; Pearton, S.J.

    1996-01-01

    III-N photonic devices have made great advances in recent years following the demonstration of doping of GaN p-type with Mg and n-type with Si. However, the deep ionization energy level of Mg in GaN (∼ 160 meV) limits the ionized of acceptors at room temperature to less than 1.0% of the substitutional Mg. With this in mind, the authors used ion implantation to characterize the ionization level of Ca in GaN since Ca had been suggested by Strite to be a shallow acceptor in GaN. Ca-implanted GaN converted from n-to-p type after a 1,100 C activation anneal. Variable temperature Hall measurements give an ionization level at 169 meV. Although this level is equivalent to that of Mg, Ca-implantation may have advantages (shallower projected range and less straggle for a given energy) than Mg for electronic devices. In particular, the authors report the first GaN device using ion implantation doping. This is a GaN junction field effect transistor (JFET) which employed Ca-implantation. A 1.7 microm JFET had a transconductance of 7 mS/mm, a saturation current at 0 V gate bias of 33 mA/mm, a f t of 2.7 GHz, and a f max of 9.4 GHz. O-implantation was also studied and shown to create a shallow donor level (∼ 25 meV) that is similar to Si. SIMS profiles of as-implanted and annealed samples showed no measurable redistribution of either Ca or O in GaN at 1,125 C

  14. GaN quantum dots: from basic understanding to unique applications

    International Nuclear Information System (INIS)

    Pelekanos, N T; Dialynas, G E; Simon, J; Mariette, H; Daudin, B

    2005-01-01

    The GaN self-assembled quantum dots constitute a very special and intriguing type of semiconductor nanostructure, mainly because they carry in their structure a giant internal electric field that can reach a value up to 7 MV/cm. In this report, we review the most important structural and optical properties of GaN quantum dots, and we discuss their advantages and limitations for blue-UV optoelectronic applications. (invited paper)

  15. Influence of ammonia flow rate for improving properties of polycrystalline GaN

    Science.gov (United States)

    Ariff, A.; Ahmad, M. A.; Hassan, Z.; Zainal, N.

    2018-06-01

    Post-annealing treatment in ammonia ambient is widely accepted for GaN material, but less works have been done to investigate the influence of the ammonia (NH3) flow rate for reducing the N-deficiency as well as improving the quality of the material. In this work, we investigated the influence of NH3 flow rate at 1, 2, 3, and 4 slm in improving properties of a ∼1 μm thick polycrystalline GaN layer. Our simulation work suggested that the uniformity of temperature and pressure gradient of the NH3 gas did not lead to the reduction of N-deficiency of the polycrystalline GaN layer. Instead, it was found that the mitigation of the N-deficiency was strongly influenced by the fluid velocity of the NH3 gas, which had passed over the layer. Either at lower or higher fluid velocity, the chance for the active N atoms to incorporate into the GaN lattice structure was low. Therefore, the N-deficiency on the polycrystalline GaN layer could not be minimized under these conditions. As measured by EDX, the N atoms incorporation was the most effective when the NH3 flow rate at 3 slm, suggesting the flow rate significantly improved the N-deficiency of the polycrystalline GaN layer. Furthermore, it favored the formation of larger hexagonal faceted grains, with the smallest FWHM of XRD peaks from the GaN diffractions in (10 1 bar 0), (0002) and (10 1 bar 1) orientations, while allowing the polycrystalline GaN layer to show sharp and intense emissions peak of NBE in a PL spectrum.

  16. GaN quantum dot polarity determination by X-ray photoelectron diffraction

    Czech Academy of Sciences Publication Activity Database

    Romanyuk, Olexandr; Bartoš, Igor; Brault, J.; De Mierry, P.; Paskova, T.; Jiříček, Petr

    2016-01-01

    Roč. 389, Dec (2016), s. 1156-1160 ISSN 0169-4332 R&D Projects: GA ČR GA15-01687S; GA MŠk LM2015088 Institutional support: RVO:68378271 Keywords : GaN * semipolar GaN * quantum dots * X-ray photoelectron diffraction * surface polarity Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.387, year: 2016

  17. Structural and optical properties of Si-doped GaN

    OpenAIRE

    Cremades Rodríguez, Ana Isabel; Gorgens, L.; Ambacher, O.; Stutzmann, M.; Scholz, F.

    2000-01-01

    Structural and optical properties of Si-doped GaN thin films grown by metal-organic chemical vapor deposition have been studied by means of high resolution x-ray diffraction (XRD), atomic force microscopy, photoluminescence, photothermal deflection spectroscopy, and optical transmission measurements. The incorporation of silicon in the GaN films leads to pronounced tensile stress. The energy position of the neutral donor bound excitonic emission correlates with the measured stress. The stress...

  18. Fabrication of GaN with buried tungsten (W) structures using epitaxial lateral overgrowth (ELO) via LP-MOVPE

    International Nuclear Information System (INIS)

    Miyake, Hideto; Yamaguchi, Motoo; Haino, Masahiro

    2000-01-01

    A buried tungsten (W) mask structure with GaN is successfully obtained by epitaxial lateral overgrowth (ELO) technique via low-pressure metalorganic vapor phase epitaxy (LP-MOVPE). The selectivity of GaN growth on the window region vs. the mask region is good. An underlying GaN with a striped W metal mask is easily decomposed above 500 C by the W catalytic effect, by which radical hydrogen is reacted with GaN. It is difficult to bury the W mask because severe damage occurs in the GaN epilayer under the mask. It is found that an underlying AlGaN/GaN layer with a narrow W stripe mask width (mask/window - 2/2 microm) leads the ELO GaN layer to be free from damage, resulting in an excellent W-buried structure

  19. Determination of the nitrogen vacancy as a shallow compensating center in GaN doped with divalent metals.

    Science.gov (United States)

    Buckeridge, J; Catlow, C R A; Scanlon, D O; Keal, T W; Sherwood, P; Miskufova, M; Walsh, A; Woodley, S M; Sokol, A A

    2015-01-09

    We report accurate energetics of defects introduced in GaN on doping with divalent metals, focusing on the technologically important case of Mg doping, using a model that takes into consideration both the effect of hole localization and dipolar polarization of the host material, and includes a well-defined reference level. Defect formation and ionization energies show that divalent dopants are counterbalanced in GaN by nitrogen vacancies and not by holes, which explains both the difficulty in achieving p-type conductivity in GaN and the associated major spectroscopic features, including the ubiquitous 3.46 eV photoluminescence line, a characteristic of all lightly divalent-metal-doped GaN materials that has also been shown to occur in pure GaN samples. Our results give a comprehensive explanation for the observed behavior of GaN doped with low concentrations of divalent metals in good agreement with relevant experiment.

  20. Growth and characterization of semi-insulating carbon-doped/undoped GaN multiple-layer buffer

    International Nuclear Information System (INIS)

    Kim, Dong-Seok; Won, Chul-Ho; Kang, Hee-Sung; Kim, Young-Jo; Kang, In Man; Lee, Jung-Hee; Kim, Yong Tae

    2015-01-01

    We have proposed a new semi-insulating GaN buffer layer, which consists of multiple carbon-doped and undoped GaN layer. The buffer layer showed sufficiently good semi-insulating characteristics, attributed to the depletion effect between the carbon-doped GaN and the undoped GaN layers, even though the thickness of the carbon-doped GaN layer in the periodic structure was designed to be very thin to minimize the total carbon incorporation into the buffer layer. The AlGaN/AlN/GaN heterostructure grown on the proposed buffer exhibited much better electrical and structural properties than that grown on the conventional thick carbon-doped semi-insulating GaN buffer layer, confirmed by Hall measurement, x-ray diffraction, and secondary ion mass spectrometry. The fabricated device also showed excellent buffer breakdown characteristics. (paper)

  1. Determination of the Nitrogen Vacancy as a Shallow Compensating Center in GaN Doped with Divalent Metals

    Science.gov (United States)

    Buckeridge, J.; Catlow, C. R. A.; Scanlon, D. O.; Keal, T. W.; Sherwood, P.; Miskufova, M.; Walsh, A.; Woodley, S. M.; Sokol, A. A.

    2015-01-01

    We report accurate energetics of defects introduced in GaN on doping with divalent metals, focusing on the technologically important case of Mg doping, using a model that takes into consideration both the effect of hole localization and dipolar polarization of the host material, and includes a well-defined reference level. Defect formation and ionization energies show that divalent dopants are counterbalanced in GaN by nitrogen vacancies and not by holes, which explains both the difficulty in achieving p -type conductivity in GaN and the associated major spectroscopic features, including the ubiquitous 3.46 eV photoluminescence line, a characteristic of all lightly divalent-metal-doped GaN materials that has also been shown to occur in pure GaN samples. Our results give a comprehensive explanation for the observed behavior of GaN doped with low concentrations of divalent metals in good agreement with relevant experiment.

  2. Influence of in-situ deposited SiNx interlayer on crystal quality of GaN epitaxial films

    Science.gov (United States)

    Fan, Teng; Jia, Wei; Tong, Guangyun; Zhai, Guangmei; Li, Tianbao; Dong, Hailiang; Xu, Bingshe

    2018-05-01

    GaN epitaxial films with SiNx interlayers were prepared by metal organic chemical vapor deposition (MOCVD) on c-plane sapphire substrates. The influences of deposition times and locations of SiNx interlayers on crystal quality of GaN epitaxial films were studied. Under the optimal growth time of 120 s for the SiNx interlayer, the dislocation density of GaN film is reduced to 4.05 × 108 cm-2 proved by high resolution X-ray diffraction results. It is found that when the SiNx interlayer deposits on the GaN nucleation islands, the subsequent GaN film has the lowest dislocation density of only 2.89 × 108 cm-2. Moreover, a model is proposed to illustrate the morphological evolution and associated propagation processes of TDs in GaN epi-layers with SiNx interlayers for different deposition times and locations.

  3. Real time spectroscopic ellipsometry investigation of homoepitaxial GaN grown by plasma assisted molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Tong-Ho; Choi, Soojeong; Wu, Pae; Brown, April [Department of Electrical and Computer Engineering, Duke University, 128 Hudson Hall, Durham, NC (United States); Losurdo, Maria; Giangregorio, Maria M.; Bruno, Giovanni [Institute of Inorganic Methodologies and of Plasmas, IMIP-CNR and INSTM UdR Bari, via Orabona, 4, 70126 Bari (Italy); Moto, Akihiro [Innovation Core SEI, Inc., 3235 Kifer Road, Santa Clara, CA 95051 (United States)

    2006-06-15

    The growth of GaN by plasma assisted molecular beam epitaxy on GaN template substrates (GaN on sapphire) is investigated with in-situ multi-channel spectroscopic ellipsometry. Growth is performed under various Ga/N flux ratios at growth temperatures in the range 710-780 C. The thermal roughening of the GaN template caused by decomposition of the surface is investigated through the temporal variation of the GaN pseudodielectric function over the temperature range of 650 C to 850 C. The structural, morphological, and optical properties are also discussed. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  4. Hybrid amplifier for calorimetry with photodiode readout

    Energy Technology Data Exchange (ETDEWEB)

    Sushkov, V V

    1994-12-31

    A hybrid surface mounted amplifier for the photodiode readout of the EM calorimeter has been developed. The main technical characteristics of the design are presented. The design able to math readout constraints for a high luminosity collider experiment is discussed. 10 refs., 2 tabs., 8 figs.

  5. Amplifier Design for Proportional Ionization Chambers

    Energy Technology Data Exchange (ETDEWEB)

    Baker, W. H.

    1950-08-24

    This paper presents the requirements of a nuclear amplifier of short resolving time, designed to accept pulses of widely varying amplitudes. Data are given which show that a proportional ionization chamber loaded with a 1,000-ohm resistor develops pulses of 0.5 microsecond duration and several volts amplitude. Results indicate that seven basic requirements are imposed on the amplifier when counting soft beta and gamma radiation in the presence of alpha particles, without absorbers. It should, (1) have a fast recovery time, (2) have a relatively good low frequency response, (3) accept pulses of widely varying heights without developing spurious pulsed, (4) have a limiting output stage, (5) preserve the inherently short rise time of the chamber, (6) minimize pulse integration, and (7) have sufficient gain to detect the weak pulses well below the chamber voltage at which continuous discharge takes place. The results obtained with an amplifier which meets these requirements is described. A formula is derived which indicates that redesign of the proportional ionization chamber might eliminate the need for an amplifier. This may be possible if the radioactive particles are collimated parallel to the collecting electrode.

  6. Methylation sensitive amplified polymorphism (MSAP) reveals that ...

    African Journals Online (AJOL)

    ajl yemi

    2011-12-19

    Dec 19, 2011 ... Key words: Salt stress, alkali stress, Gossypium hirsutum L., DNA methylation, methylation sensitive amplified polymorphism (MSAP). INTRODUCTION. DNA methylation is one of the key epigenetic mecha- nisms among eukaryotes that can modulate gene expression without the changes of DNA sequence.

  7. Enhanced timing channel for spectroscopy amplifiers

    Energy Technology Data Exchange (ETDEWEB)

    Ianakiev, K; Grigorov, N [Inst. for Nuclear Research and Nuclear Energy, Sofia (Bulgaria)

    1996-12-31

    Purpose of this paper is to analyze noise and timing performance of some methods of filtering in the fast channel. Implementation of RLC-filter into a semi-Gaussian amplifier allows to obtain the time resolution of 420 ns. 5 refs.

  8. Optimization of Pr3+:ZBLAN fiber amplifiers

    DEFF Research Database (Denmark)

    Pedersen, B.; Miniscalco, J. W.; Quimby, R. S.

    1992-01-01

    Experimental parameters have been measured and used in a quantitative model of Pr3+-doped fluorozirconate fiber amplifiers. The optimum cutoff wavelength was determined to be 800 nm and the gain for 400 mW of pump was found to increase from 12 to 34 dB if the NA was increased from 0.15 to 0...

  9. Reducing Switching Artifacts in Chopper Amplifiers

    NARCIS (Netherlands)

    Kusuda, Y.

    2018-01-01

    This thesis describes the theory, design, and implementation of chopper operational amplifiers (op-amps) in CMOS integrated circuits (ICs). The chopping technique periodically corrects DC errors of such op-amps, so that low 1/f noise and stable, microvolt-level offset can be achieved. However,

  10. High-Performance Operational and Instrumentation Amplifiers

    NARCIS (Netherlands)

    Shahi, B.

    2015-01-01

    This thesis describes techniques to reduce the offset error in precision instrumentation and operational amplifiers. The offset error which is considered a major error source associated with gain blocks, together with other errors are reviewed. Conventional and newer approaches to remove offset and

  11. SINGLE CONVERSION ISOLATED IMPEDANCE TRANSFORMATION AMPLIFIER

    DEFF Research Database (Denmark)

    2003-01-01

    The invention relates to a switch mode power amplifier. A first and a second change-over switch are inserted between a DC voltage supply and a primary side of an isolation transformer. Two secondary windings are connected to a power output terminal. A first and a second secondary side power switc...

  12. Feedback analysis of transimpedance operational amplifier circuits

    DEFF Research Database (Denmark)

    Bruun, Erik

    1993-01-01

    The transimpedance or current feedback operational amplifier (CFB op-amp) is reviewed and compared to a conventional voltage mode op-amp using an analysis emphasizing the basic feedback characteristics of the circuit. With this approach the paradox of the constant bandwidth obtained from CFB op...

  13. Random amplified polymorphic DNA based genetic characterization ...

    African Journals Online (AJOL)

    Random amplified polymorphic DNA based genetic characterization of four important species of Bamboo, found in Raigad district, Maharashtra State, India. ... Bambusoideae are differentiated from other members of the family by the presence of petiolate blades with parallel venation and stamens are three, four, six or more, ...

  14. Molecular markers. Amplified fragment length polymorphism

    Directory of Open Access Journals (Sweden)

    Pržulj Novo

    2005-01-01

    Full Text Available Amplified Fragment Length Polymorphism molecular markers (AFLPs has been developed combining procedures of RFLPs and RAPDs molekular markers, i.e. the first step is restriction digestion of the genomic DNA that is followed by selective amplification of the restricted fragments. The advantage of the AFLP technique is that it allows rapid generation of a large number of reproducible markers. The reproducibility of AFLPs markers is assured by the use of restriction site-specific adapters and adapter-specific primers for PCR reaction. Only fragments containing the restriction site sequence plus the additional nucleotides will be amplified and the more selected nucleotides added on the primer sequence the fewer the number of fragments amplified by PCR. The amplified products are normally separated on a sequencing gel and visualized after exposure to X-ray film or by using fluorescent labeled primers. AFLP shave proven to be extremely proficient in revealing diversity at below the species level. A disadvantage of AFLP technique is that AFLPs are essentially a dominant marker system and not able to identify heterozygotes.

  15. Compensation techniques for operational amplifier bias current

    International Nuclear Information System (INIS)

    Silva, M.S.

    1981-01-01

    Two techniques are proposed for the compensation of the input current on operational amplifiers that can be used on inverting and non-inverting configurations. A qualitative analysis of temperature drift problems is made, and as a practical application, the construction of a voltage follower for high impedance measurements is presented. (Author) [pt

  16. Application of randomly amplified polymorphic DNA (RAPD ...

    African Journals Online (AJOL)

    Jane

    2011-10-10

    Oct 10, 2011 ... and T7-010 based on functional markers according to He et al. (2007). These primers were constructed by Invitrogen GmbH,. Karlsruhe, Germany, and used to amplify the polyphenol oxidases genes. The sequences of these primers were as follows: T3-001: 5`-CCA TTA ACC CTC ACT AAA GGG ACC GTA ...

  17. Effects of thin heavily Mg-doped GaN capping layer on ohmic contact formation of p-type GaN

    International Nuclear Information System (INIS)

    Wu, L L; Zhao, D G; Jiang, D S; Chen, P; Le, L C; Li, L; Liu, Z S; Zhang, S M; Zhu, J J; Wang, H; Zhang, B S; Yang, H

    2013-01-01

    The growth condition of thin heavily Mg-doped GaN capping layer and its effect on ohmic contact formation of p-type GaN were investigated. It is confirmed that the excessive Mg doping can effectively enhance the Ni/Au contact to p-GaN after annealing at 550 °C. When the flow rate ratio between Mg and Ga gas sources is 6.4% and the layer width is 25 nm, the capping layer grown at 850 °C exhibits the best ohmic contact properties with respect to the specific contact resistivity (ρ c ). This temperature is much lower than the conventional growth temperature of Mg-doped GaN, suggesting that the deep-level-defect induced band may play an important role in the conduction of capping layer. (paper)

  18. Oxygen adsorption and incorporation at irradiated GaN(0001) and GaN(0001¯) surfaces: First-principles density-functional calculations

    Science.gov (United States)

    Sun, Qiang; Selloni, Annabella; Myers, T. H.; Doolittle, W. Alan

    2006-11-01

    Density functional theory calculations of oxygen adsorption and incorporation at the polar GaN(0001) and GaN(0001¯) surfaces have been carried out to explain the experimentally observed reduced oxygen concentration in GaN samples grown by molecular beam epitaxy in the presence of high energy (˜10keV) electron beam irradiation [Myers , J. Vac. Sci. Technol. B 18, 2295 (2000)]. Using a model in which the effect of the irradiation is to excite electrons from the valence to the conduction band, we find that both the energy cost of incorporating oxygen impurities in deeper layers and the oxygen adatom diffusion barriers are significantly reduced in the presence of the excitation. The latter effect leads to a higher probability for two O adatoms to recombine and desorb, and thus to a reduced oxygen concentration in the irradiated samples, consistent with experimental observations.

  19. Carrier confinement effects of InxGa1-xN/GaN multi quantum disks with GaN surface barriers grown in GaN nanorods

    Science.gov (United States)

    Park, Youngsin; Chan, Christopher C. S.; Taylor, Robert A.; Kim, Nammee; Jo, Yongcheol; Lee, Seung W.; Yang, Woochul; Im, Hyunsik

    2018-04-01

    Structural and optical properties of InxGa1-xN/GaN multi quantum disks (QDisks) grown on GaN nanorods by molecular beam epitaxy have been investigated by transmission electron microscopy and micro-photoluminescence (PL) spectroscopy. Two types of InGaN QDisks were grown: a pseudo-3D confined InGaN pillar-type QDisks embedded in GaN nanorods; and QDisks in flanged cone type GaN nanorods. The PL emission peak and excitation dependent PL behavior of the pillar-type Qdisks differ greatly from those of the flanged cone type QDisks. Time resolved PL was carried out to probe the differences in charge carrier dynamics. The results suggest that by constraining the formation of InGaN QDisks within the centre of the nanorod, carriers are restricted from migrating to the surface, decreasing the surface recombination at high carrier densities.

  20. Impact of substrate off-angle on the m-plane GaN Schottky diodes

    Science.gov (United States)

    Yamada, Hisashi; Chonan, Hiroshi; Takahashi, Tokio; Shimizu, Mitsuaki

    2018-04-01

    We investigated the effects of the substrate off-angle on the m-plane GaN Schottky diodes. GaN epitaxial layers were grown by metal-organic chemical vapor deposition on m-plane GaN substrates having an off-angle of 0.1, 1.1, 1.7, or 5.1° toward [000\\bar{1}]. The surface of the GaN epitaxial layers on the 0.1°-off substrate consisted of pyramidal hillocks and contained oxygen (>1017 cm-3) and carbon (>1016 cm-3) impurities. The residual carbon and oxygen impurities decreased to current of the 0.1°-off m-plane GaN Schottky diodes originated from the +c facet of the pyramidal hillocks. The leakage current was efficiently suppressed through the use of an off-angle that was observed to be greater than 1.1°. The off-angle of the m-plane GaN substrate is critical in obtaining high-performance Schottky diodes.