High Efficiency Ka-Band Spatial Combiner

Directory of Open Access Journals (Sweden)

D. Passi

2014-12-01

Full Text Available A Ka-Band, High Efficiency, Small Size Spatial Combiner (SPC is proposed in this paper, which uses an innovatively matched quadruple Fin Lines to microstrip (FLuS transitions. At the date of this paper and at the Author's best knowledge no such FLuS innovative transitions have been reported in literature before. These transitions are inserted into a WR28 waveguide T-junction, in order to allow the integration of 16 Monolithic Microwave Integrated Circuit (MMIC Solid State Power Amplifiers (SSPA's. A computational electromagnetic model using the finite elements method has been implemented. A mean insertion loss of 2 dB is achieved with a return loss better the 10 dB in the 31-37 GHz bandwidth.

Deep space propagation experiments at Ka-band

Science.gov (United States)

Butman, Stanley A.

1990-01-01

Propagation experiments as essential components of the general plan to develop an operational deep space telecommunications and navigation capability at Ka-band (32 to 35 GHz) by the end of the 20th century are discussed. Significant benefits of Ka-band over the current deep space standard X-band (8.4 GHz) are an improvement of 4 to 10 dB in telemetry capacity and a similar increase in radio navigation accuracy. Propagation experiments are planned on the Mars Observer Mission in 1992 in preparation for the Cassini Mission to Saturn in 1996, which will use Ka-band in the search for gravity waves as well as to enhance telemetry and navigation at Saturn in 2002. Subsequent uses of Ka-band are planned for the Solar Probe Mission and the Mars Program.

Low-order-mode harmonic multiplying gyrotron traveling-wave amplifier in W band

International Nuclear Information System (INIS)

Yeh, Y. S.; Chen, C. H.; Yang, S. J.; Lai, C. H.; Lin, T. Y.; Lo, Y. C.; Hong, J. W.; Hung, C. L.; Chang, T. H.

2012-01-01

Harmonic multiplying gyrotron traveling-wave amplifiers (gyro-TWAs) allow for magnetic field reduction and frequency multiplication. To avoid absolute instabilities, this work proposes a W-band harmonic multiplying gyro-TWA operating at low-order modes. By amplifying a fundamental harmonic TE 11 drive wave, the second harmonic component of the beam current initiates a TE 21 wave to be amplified. Absolute instabilities in the gyro-TWA are suppressed by shortening the interaction circuit and increasing wall losses. Simulation results reveal that compared with Ka-band gyro-TWTs, the lower wall losses effectively suppress absolute instabilities in the W-band gyro-TWA. However, a global reflective oscillation occurs as the wall losses decrease. Increasing the length or resistivity of the lossy section can reduce the feedback of the oscillation to stabilize the amplifier. The W-band harmonic multiplying gyro-TWA is predicted to yield a peak output power of 111 kW at 98 GHz with an efficiency of 25%, a saturated gain of 26 dB, and a bandwidth of 1.6 GHz for a 60 kV, 7.5 A electron beam with an axial velocity spread of 8%.

Partially filled intermediate band of Cr-doped GaN films

International Nuclear Information System (INIS)

Sonoda, S.

2012-01-01

We investigated the band structure of sputtered Cr-doped GaN (GaCrN) films using optical absorption, photoelectron yield spectroscopy, and charge transport measurements. It was found that an additional energy band is formed in the intrinsic band gap of GaN upon Cr doping, and that charge carriers in the material move in the inserted band. Prototype solar cells showed enhanced short circuit current and open circuit voltage in the n-GaN/GaCrN/p-GaN structure compared to the GaCrN/p-GaN structure, which validates the proposed concept of an intermediate-band solar cell.

First-principle natural band alignment of GaN / dilute-As GaNAs alloy

Directory of Open Access Journals (Sweden)

Chee-Keong Tan

2015-01-01

Full Text Available Density functional theory (DFT calculations with the local density approximation (LDA functional are employed to investigate the band alignment of dilute-As GaNAs alloys with respect to the GaN alloy. Conduction and valence band positions of dilute-As GaNAs alloy with respect to the GaN alloy on an absolute energy scale are determined from the combination of bulk and surface DFT calculations. The resulting GaN / GaNAs conduction to valence band offset ratio is found as approximately 5:95. Our theoretical finding is in good agreement with experimental observation, indicating the upward movements of valence band at low-As content dilute-As GaNAs are mainly responsible for the drastic reduction of the GaN energy band gap. In addition, type-I band alignment of GaN / GaNAs is suggested as a reasonable approach for future device implementation with dilute-As GaNAs quantum well, and possible type-II quantum well active region can be formed by using InGaN / dilute-As GaNAs heterostructure.

Radar Waveform Pulse Analysis Measurement System for High-Power GaN Amplifiers

Science.gov (United States)

Thrivikraman, Tushar; Perkovic-Martin, Dragana; Jenabi, Masud; Hoffman, James

2012-01-01

This work presents a measurement system to characterize the pulsed response of high-power GaN amplifiers for use in space-based SAR platforms that require very strict amplitude and phase stability. The measurement system is able to record and analyze data on three different time scales: fast, slow, and long, which allows for greater detail of the mechanisms that impact amplitude and phase stability. The system is fully automated through MATLAB, which offers both instrument control capability and in-situ data processing. To validate this system, a high-power GaN HEMT amplifier operated in saturation was characterized. The fast time results show that variations to the amplitude and phase are correlated to DC supply transients, while long time characteristics are correlated to temperature changes.

A High-Efficiency 100-W GaN Three-Way Doherty Amplifier for Base-Station Applications

NARCIS (Netherlands)

Pelk, M.J.; Neo, W.C.E.; Gajadharsing, J.R.; Pengelly, R.S.; De Vreede, L.C.N.

2008-01-01

A three-way Doherty 100-W GaN base-station power amplifier at 2.14 GHz is presented. Simple, but accurate design equations for the output power combiner of the amplifier are introduced. Mixed-signal techniques are utilized for uncompromised control of the amplifier stages to optimize efficiency, as

Red shift of near band edge emission in cerium implanted GaN

International Nuclear Information System (INIS)

Majid, Abdul; Ali, Akbar

2009-01-01

Rare earth (RE) doping in GaN is a promising technology to control the optical properties. However, there are no reports on doping of cerium (Ce) into GaN, which is a very unique RE element. In this paper, we performed photoluminescence (PL) and optical transmission measurements on Ce-doped GaN for the first time. A significant red shift of about 120 meV was observed in the PL peak position of the donor bound excitons. This red shift of near band emission was corroborated by the red shift of the absorption edge related to GaN in the optical transmission measurements. This observation is attributed to the band gap narrowing in GaN heavily doped with Ce. The activation energy of the Ce-related shallow donor is found to be 21.9 meV in GaN.

Red shift of near band edge emission in cerium implanted GaN

Energy Technology Data Exchange (ETDEWEB)

Majid, Abdul; Ali, Akbar, E-mail: abdulmajid40@yahoo.co, E-mail: akbar@qau.edu.p [Advance Materials Physics Laboratory, Physics Department, Quaid-i-Azam University, Islamabad (Pakistan)

2009-02-21

Rare earth (RE) doping in GaN is a promising technology to control the optical properties. However, there are no reports on doping of cerium (Ce) into GaN, which is a very unique RE element. In this paper, we performed photoluminescence (PL) and optical transmission measurements on Ce-doped GaN for the first time. A significant red shift of about 120 meV was observed in the PL peak position of the donor bound excitons. This red shift of near band emission was corroborated by the red shift of the absorption edge related to GaN in the optical transmission measurements. This observation is attributed to the band gap narrowing in GaN heavily doped with Ce. The activation energy of the Ce-related shallow donor is found to be 21.9 meV in GaN.

A Ka-band low-noise amplifier with a coplanar waveguide (CPW) structure with 0.15-μm GaAs pHEMT technology

International Nuclear Information System (INIS)

Wu Chia-Song; Chang Chien-Huang; Liu Hsing-Chung; Lin Tah-Yeong; Wu Hsien-Ming

2010-01-01

This investigation explores a low-noise amplifier (LNA) with a coplanar waveguide (CPW) structure, in which a two-stage amplifier is associated with a cascade schematic circuit, implemented in 0.15-μm GaAs pseudomorphic high electron mobility transistor (pHEMT) technology in a Ka-band (26.5-40.0 GHz) microwave monolithic integrated circuit (MMIC). The experimental results demonstrate that the proposed LNA has a peak gain of 12.53 dB at 30 GHz and a minimum noise figure of 3.3 dB at 29.5 GHz, when biased at a V ds of 2 V and a V gs of -0.6 V with a drain current of 16 mA in the circuit. The results show that the millimeter-wave LNA with coplanar waveguide structure has a higher gain and wider bandwidth than a conventional circuit. Finally, the overall LNA characterization exhibits high gain and low noise, indicating that the LNA has a compact circuit and favorable RF characteristics. The strong RF character exhibited by the LNA circuit can be used in millimeter-wave circuit applications. (semiconductor integrated circuits)

The Potential for a Ka-band (32 GHz) Worldwide VLBI Network

Science.gov (United States)

Jacobs, C. S.; Bach, U.; Colomer, F.; Garcia-Miro, C.; Gomez-Gonzalez, J.; Gulyaev, S.; Horiuchi, S.; Ichikawa, R.; Kraus, A.; Kronschnabl, G.;

Studying NASA's Transition to Ka-Band Communications for Low Earth Orbit

Science.gov (United States)

Chelmins, David T.; Reinhart, Richard C.; Mortensen, Dale; Welch, Bryan; Downey, Joseph; Evans, Michael

2014-01-01

As the S-band spectrum becomes crowded, future space missions will need to consider moving command and telemetry services to Ka-band. NASA's Space Communications and Navigation (SCaN) Testbed provides a software-defined radio (SDR) platform that is capable of supporting investigation of this service transition. The testbed contains two S-band SDRs and one Ka-band SDR. Over the past year, SCaN Testbed has demonstrated Ka-band communications capabilities with NASAs Tracking and Data Relay Satellite System (TDRSS) using both open- and closed-loop antenna tracking profiles. A number of technical areas need to be addressed for successful transition to Ka-band. The smaller antenna beamwidth at Ka-band increases the criticality of antenna pointing, necessitating closed loop tracking algorithms and new techniques for received power estimation. Additionally, the antenna pointing routines require enhanced knowledge of spacecraft position and attitude for initial acquisition, versus an S-band antenna. Ka-band provides a number of technical advantages for bulk data transfer. Unlike at S-band, a larger bandwidth may be available for space missions, allowing increased data rates. The potential for high rate data transfer can also be extended for direct-to-ground links through use of variable or adaptive coding and modulation. Specific examples of Ka-band research from SCaN Testbeds first year of operation will be cited, such as communications link performance with TDRSS, and the effects of truss flexure on antenna pointing.

Electronic structures and valence band splittings of transition metals doped GaNs

International Nuclear Information System (INIS)

Lee, Seung-Cheol; Lee, Kwang-Ryeol; Lee, Kyu-Hwan

2007-01-01

For a practical viewpoint, presence of spin splitting of valence band in host semiconductors by the doping of transition metal (TM) ions is an essential property when designing a diluted magnetic semiconductors (DMS) material. The first principle calculations were performed on the electronic and magnetic structure of 3d transition metal doped GaN. V, Cr, and Mn doped GaNs could not be candidates for DMS materials since most of their magnetic moments is concentrated on the TM ions and the splittings of valence band were negligible. In the cases of Fe, Co, Ni, and Cu doped GaNs, on the contrary, long-ranged spin splitting of valence band was found, which could be candidates for DMS materials

5 Watt GaN HEMT Power Amplifier for LTE

Directory of Open Access Journals (Sweden)

K. Niotaki

2014-04-01

Full Text Available This work presents the design and implementation of a stand-alone linear power amplifier at 2.4 GHz with high output power. A GaN HEMT transistor is selected for the design and implementation of the power amplifier. The device exhibits a gain of 11.7 dB and a drain efficiency of 39% for an output power of 36.7 dBm at 2.4 GHz for an input power of 25dBm. The carrier to intermodulation ratio is better than 25 dB for a two tone input signal of 25 dBm of total power and a spacing of 5 MHz. The fabricated device is also tested with LTE input signals of different bandwidths (5MHz to 20MHz.

Ka-band waveguide rotary joint

KAUST Repository

Yevdokymov, Anatoliy; Sirenko, Kostyantyn; Kryzhanovskiy, Volodymyr; Pazynin, Vadim

2013-01-01

The authors present a design of a waveguide rotary joint operating in Ka-band with central frequency of 33 GHz, which also acts as an antenna mount. The main unit consists of two flanges with a clearance between them; one of the flanges has three

Ka-Band Klystron Amplifier for CUBESATs, Phase II

Data.gov (United States)

National Aeronautics and Space Administration — We offer an ultra-compact klystron amplifier for remote sensing on CubeSats. It will operate at 35.7 GHz, have 400 MHz bandwidth, and output greater than 32 watts...

Integrated wide-band low-background amplifiers

International Nuclear Information System (INIS)

Il'yushchenko, I.I.

1980-01-01

Ways of increasing stability and reproduction of characteristics of wide-band integral amplifiers that would to the least extent increase their background noises, are discussed. Considered are some certain flowsheets of integral wide-band amplifiers with low background noise of foreign production which differ from one another by construction of inlet cascades as well as by the applied feedback type. The principal flowsheets of the amplifiers and their main performances are presented. The analysis of the data obtained has revealed that microcircuits made of cascades with a common emitter and local combined feedback are most wide-band among all the considered microcircuits [ru

Deployable Ka-Band Reflectarray, Phase I

Data.gov (United States)

National Aeronautics and Space Administration — Tyvak, in collaboration with UCLA, proposes a novel approach to the challenge of creating a large reflector for Ka-band high data rate links. We propose to attach...

Ka-band waveguide rotary joint

KAUST Repository

Yevdokymov, Anatoliy

2013-04-11

The authors present a design of a waveguide rotary joint operating in Ka-band with central frequency of 33 GHz, which also acts as an antenna mount. The main unit consists of two flanges with a clearance between them; one of the flanges has three circular choke grooves. Utilisation of three choke grooves allows larger operating clearance. Two prototypes of the rotary joint have been manufactured and experimentally studied. The observed loss is from 0.4 to 0.8 dB in 1.5 GHz band.

A Ka-Band Celestial Reference Frame with Applications to Deep Space Navigation

Science.gov (United States)

Jacobs, Christopher S.; Clark, J. Eric; Garcia-Miro, Cristina; Horiuchi, Shinji; Sotuela, Ioana

2011-01-01

The Ka-band radio spectrum is now being used for a wide variety of applications. This paper highlights the use of Ka-band as a frequency for precise deep space navigation based on a set of reference beacons provided by extragalactic quasars which emit broadband noise at Ka-band. This quasar-based celestial reference frame is constructed using X/Ka-band (8.4/32 GHz) from fifty-five 24-hour sessions with the Deep Space Network antennas in California, Australia, and Spain. We report on observations which have detected 464 sources covering the full 24 hours of Right Ascension and declinations down to -45 deg. Comparison of this X/Ka-band frame to the international standard S/X-band (2.3/8.4 GHz) ICRF2 shows wRMS agreement of approximately 200 micro-arcsec in alpha cos(delta) and approximately 300 micro-arcsec in delta. There is evidence for systematic errors at the 100 micro-arcsec level. Known errors include limited SNR, lack of instrumental phase calibration, tropospheric refraction mis-modeling, and limited southern geometry. The motivation for extending the celestial reference frame to frequencies above 8 GHz is to access more compact source morphology for improved frame stability and to support spacecraft navigation for Ka-band based NASA missions.

Band-Bending of Ga-Polar GaN Interfaced with Al2O3 through Ultraviolet/Ozone Treatment.

Science.gov (United States)

Kim, Kwangeun; Ryu, Jae Ha; Kim, Jisoo; Cho, Sang June; Liu, Dong; Park, Jeongpil; Lee, In-Kyu; Moody, Baxter; Zhou, Weidong; Albrecht, John; Ma, Zhenqiang

2017-05-24

Understanding the band bending at the interface of GaN/dielectric under different surface treatment conditions is critically important for device design, device performance, and device reliability. The effects of ultraviolet/ozone (UV/O 3 ) treatment of the GaN surface on the energy band bending of atomic-layer-deposition (ALD) Al 2 O 3 coated Ga-polar GaN were studied. The UV/O 3 treatment and post-ALD anneal can be used to effectively vary the band bending, the valence band offset, conduction band offset, and the interface dipole at the Al 2 O 3 /GaN interfaces. The UV/O 3 treatment increases the surface energy of the Ga-polar GaN, improves the uniformity of Al 2 O 3 deposition, and changes the amount of trapped charges in the ALD layer. The positively charged surface states formed by the UV/O 3 treatment-induced surface factors externally screen the effect of polarization charges in the GaN, in effect, determining the eventual energy band bending at the Al 2 O 3 /GaN interfaces. An optimal UV/O 3 treatment condition also exists for realizing the "best" interface conditions. The study of UV/O 3 treatment effect on the band alignments at the dielectric/III-nitride interfaces will be valuable for applications of transistors, light-emitting diodes, and photovoltaics.

Ka-band microwave generation using the Smith-Purcell effect

International Nuclear Information System (INIS)

Ekdahl, C.A.; Davis, H.A.

1983-01-01

The CERETRON microwave generator concept relies on the conversion of intense relativistic electron beam (REB) energy into highpower microwave emission through the Smith-Purcell effect. We report initial results from experiments with the production of Ka-band Smith-Purcell radiation generated by a 50-kA, 2.8-MeV beam propagated through a cylindrical transmission grating with lambda 0 = 1 cm. These experiments were performed without a quasi-optical resonator, and the output was limited by breakdown of the grating and by limited access through the 90-kG magnet coil. Nevertheless, the measured power output from these initial experiments was about 7 kW in the Ka band

Flexible GaN for High Performance, Strainable Radio Frequency Devices (Postprint)

Science.gov (United States)

2017-11-02

wireless systems where consumers will benefit significantly from the high power densities achievable in GaN devices.[8] Further complicating the...future strainable and conformal devices for transmission of radio-frequency (RF) signals over large distances for more efficient wireless communication... power density of traditional RF amplifier materials at different frequencies and wireless generation bands, as well as an image of the flexible GaN

F-band, High-Efficiency GaN Power Amplifier for the Scanning Microwave Limb Sounder and SOFIA, Phase I

Data.gov (United States)

National Aeronautics and Space Administration — QuinStar Technology proposes to develop a 4-watt Solid-State Power Amplifier (SSPA) operating at F-band (106-114 GHz) with a power-added efficiency (PAE) of greater...

Millimeter-Wave GaN MMIC Integration with Additive Manufacturing

Science.gov (United States)

Coffey, Michael

This thesis addresses the analysis, design, integration and test of microwave and millimeter-wave monolithic microwave integrated circuits (MMIC or MMICs). Recent and ongoing progress in semiconductor device fabrication and MMIC processing technology has pushed the upper limit in MMIC frequencies from millimeter-wave (30-300 GHz) to terahertz (300-3000 GHz). MMIC components operating at these frequencies will be used to improve the sensitivity and performance of radiometers, receivers for communication systems, passive remote sensing systems, transceivers for radar instruments and radio astronomy systems. However, a serious hurdle in the utilization of these MMIC components, and a main topic presented in this thesis, is the development and reliable fabrication of practical packaging techniques. The focus of this thesis is the investigation of first, the design and analysis of microwave and millimeter-wave GaN MMICs and second, the integration of those MMICs into usable waveguide components. The analysis, design and testing of various X-band (8-12 GHz) thru H-band (170-260 GHz) GaN MMIC power amplifier (PA or PAs), including a V-band (40-75 GHz) voltage controlled oscillator, is the majority of this work. Several PA designs utilizing high-efficiency techniques are analyzed, designed and tested. These examples include a 2nd harmonic injection amplifier, a Class-E amplifier fabricated with a GaN-on-SiC 300 GHz fT process, and an example of the applicability of supply-modulation with a Doherty power amplifier, all operating at 10 GHz. Two H-band GaN MMIC PAs are designed, one with integrated CPW-to-waveguide transitions for integration. The analysis of PA stability is especially important for wideband, high- fT devices and a new way of analyzing stability is explored and experimentally validated. Last, the challenges of integrating MMICs operating at millimeter-wave frequencies are discussed and assemblies using additive and traditional manufacturing are demonstrated.

Advances in Ka-Band Communication System for CubeSats and SmallSats

Science.gov (United States)

Kegege, Obadiah; Wong, Yen F.; Altunc, Serhat

2016-01-01

A study was performed that evaluated the feasibility of Ka-band communication system to provide CubeSat/SmallSat high rate science data downlink with ground antennas ranging from the small portable 1.2m/2.4m to apertures 5.4M, 7.3M, 11M, and 18M, for Low Earth Orbit (LEO) to Lunar CubeSat missions. This study included link analysis to determine the data rate requirement, based on the current TRL of Ka-band flight hardware and ground support infrastructure. Recent advances in Ka-band transceivers and antennas, options of portable ground stations, and various coverage distances were included in the analysis. The link/coverage analysis results show that Cubesat/Smallsat missions communication requirements including frequencies and data rates can be met by utilizing Near Earth Network (NEN) Ka-band support with 2 W and high gain (>6 dBi) antennas.

Valence band offset of β-Ga2O3/wurtzite GaN heterostructure measured by X-ray photoelectron spectroscopy.

Science.gov (United States)

Wei, Wei; Qin, Zhixin; Fan, Shunfei; Li, Zhiwei; Shi, Kai; Zhu, Qinsheng; Zhang, Guoyi

2012-10-10

A sample of the β-Ga2O3/wurtzite GaN heterostructure has been grown by dry thermal oxidation of GaN on a sapphire substrate. X-ray diffraction measurements show that the β-Ga2O3 layer was formed epitaxially on GaN. The valence band offset of the β-Ga2O3/wurtzite GaN heterostructure is measured by X-ray photoelectron spectroscopy. It is demonstrated that the valence band of the β-Ga2O3/GaN structure is 1.40 ± 0.08 eV.

Ka-Band MMIC Subarray Technology Program (Ka-Mist)

Science.gov (United States)

Pottinger, W.

1995-01-01

Ka-band monolithic microwave integrated circuit (MMIC) arrays have been considered as having high potential for increasing the capability of space, aircraft, and land mobile communication systems in terms of scan performance, data rate, link margin, and flexibility while offering a significant reduction in size, weight, and power consumption. Insertion of MMIC technology into antenna systems, particularly at millimeter wave frequencies using low power and low noise amplifiers in closed proximity to the radiating elements, offers a significant improvement in the array transmit efficiency, receive system noise figure, and overall array reliability. Application of active array technology also leads to the use of advanced beamforming techniques that can improve beam agility, diversity, and adaptivity to complex signal environments. The objective of this program was to demonstrate the technical feasibility of the 'tile' array packaging architecture at EHF via the insertion of 1990 MMIC technology into a functional tile array or subarray module. The means test of this objective was to demonstrate and deliver to NASA a minimum of two 4 x 4 (16 radiating element) subarray modules operating in a transmit mode at 29.6 GHz. Available (1990) MMIC technology was chosen to focus the program effort on the novel interconnect schemes and packaging requirements rather than focusing on MMIC development. Major technical achievements of this program include the successful integration of two 4 x 4 subarray modules into a single antenna array. This 32 element array demonstrates a transmit EIRP of over 300 watts yielding an effective directive power gain in excess of 55 dB at 29.63 GHz. The array has been actively used as the transmit link in airborne/terrestrial mobile communication experiments accomplished via the ACTS satellite launched in August 1993.

Taevo Gans / Ene Ammer

Index Scriptorium Estoniae

Ammer, Ene

1998-01-01

Sisearhitekt Taevo Gansist. Tudengipõlvest, selle aja projektidest, sõpruskonnast, tandemist Summatavet & Gans, Venemaa tellimustest, kaastöölistest. Üksinda Hommilkumaal vene tarbekunsti näitusega 1974. a. 1988. a. loodud perefirmast "GaDis" (omanikud Taevo, Helle Gans, Riia Oja), mis nõustab ka "Wermot" mööbli osas. "GaDise" sisekujundusprojektidest, millega Taevo ja Helle Gans tegelevad üheskoos

Use of the 37-38 GHz and 40-40.5 GHz Ka-bands for Deep Space Communications

Science.gov (United States)

Morabito, David; Hastrup, Rolf

2004-01-01

This paper covers a wide variety of issues associated with the implementation and use of these frequency bands for deep space communications. Performance issues, such as ground station pointing stability, ground antenna gain, antenna pattern, and propagation effects such as due to atmospheric, charged-particle and space loss at 37 GHz, will be addressed in comparison to the 32 GHz Ka-band deep space allocation. Issues with the use of and competition for this spectrum also will be covered. The state of the hardware developed (or proposed) for operating in this frequency band will be covered from the standpoint of the prospects for achieving higher data rates that could be accommodated in the available bandwidth. Hardware areas to be explored include modulators, digital-to-analog converters, filters, power amplifiers, receivers, and antennas. The potential users of the frequency band will be explored as well as their anticipated methods to achieve the potential high data rates and the implications of the competition for bandwidth.

An integrated Ka/Ku-band payload for personal, mobile and private business communications

Science.gov (United States)

Hayes, Edward J.; Keelty, J. Malcolm

1991-01-01

The Canadian Department of Communications has been studying options for a government-sponsored demonstration payload to be launched before the end of the century. A summary of the proposed system concepts and network architectures for providing an advanced private business network service at Ku-band and personal and mobile communications at Ka-band is presented. The system aspects addressed include coverage patterns, traffic capacity, and grade of service, multiple access options as well as special problems, such as Doppler in mobile applications. Earth terminal types and the advanced payload concept proposed in a feasibility study for the demonstration mission are described. This concept is a combined Ka-band/Ku-band payload which incorporates a number of advanced satellite technologies including a group demodulator to convert single-channel-per-carrier frequency division multiple access uplink signals to a time division multiplex downlink, on-board signal regeneration, and baseband switching to support packet switched data operation. The on-board processing capability of the payload provides a hubless VSAT architecture which permits single-hop full mesh interconnectivity. The Ka-band and Ku-band portions of the payload are fully integrated through an on-board switch, thereby providing the capability for fully integrated services, such as using the Ku-band VSAT terminals as gateway stations for the Ka-band personal and mobile communications services.

Power Amplifier Design for E-band Wireless System Communications

DEFF Research Database (Denmark)

Hadziabdic, Dzenan; Krozer, Viktor; Johansen, Tom Keinicke

2008-01-01

E-band wireless communications will become important as the microwave backhaul for high-speed data transmission. One of the most critical components is the front-end power amplifier in this system. The paper analyzes different technologies with potential in the E-band frequency range and present...... a power amplifier design satisfying the E-band system specifications. The designed power amplifier achieves a maximum output power of ges 20 dBm with a state-of-the-art power-added efficiency of 15%. The power is realized using InP DHBT technology. To the best of our knowledge it is the highest output...... power and efficiency reported for an InP HBT power amplifier in this frequency range. The predicted power-added efficiency is higher than that of power amplifiers based on SiGe HBT and GaAs pHEMT technologies. The design shows the capabilities of InP DHBT for power amplifier applications...

Ka-Band Electronically Steered CubeSat Antenna, Phase II

Data.gov (United States)

National Aeronautics and Space Administration — Kymeta Government Solutions (KGS) designed, analyzed, built, tested, and delivered a small, lightweight, low-cost, low-power electronically steered Ka-band prototype...

K-Band Traveling-Wave Tube Amplifier

Science.gov (United States)

Force, Dale A.; Simons, Rainee N.; Peterson, Todd T.; Spitsen, Paul C.

2010-01-01

A new space-qualified, high-power, high-efficiency, K-band traveling-wave tube amplifier (TWTA) will provide high-rate, high-capacity, direct-to-Earth communications for science data and video gathered by the Lunar Reconnaissance Orbiter (LRO) during its mission. Several technological advances were responsible for the successful demonstration of the K-band TWTA.

High Rate User Ka-Band Phased Array Antenna Test Results

Science.gov (United States)

Caroglanian, Armen; Perko, Kenneth; Seufert, Steve; Dod, Tom; Warshowsky, Jay; Day, John H. (Technical Monitor)

2001-01-01

The High Rate User Phased Array Antenna (HRUPAA) is a Ka-Band planar phased array designed by the Harris Corporation for the NASA Goddard Space Flight Center. The HRUPAA permits a satellite to downlink data either to a ground station or through the Tracking and Data Relay Satellite System (TDRSS). The HRUPAA is scanned electronically by ground station / user satellite command over a 120 degree cone angle. The phased array has the advantage of not imparting attitude disturbances to the user spacecraft. The 288-element transmit-only array has distributed RF amplifiers integrated behind each of the printed patch antenna elements. The array has 33 dBW EIRP and is left-hand circularly polarized. An engineering model of a partially populated array has been developed and delivered to NASA Goddard Space Flight Center. This report deals with the testing of the engineering model at the Goddard Antenna Range near-field and compact range facilities. The antenna specifications are described first, followed by the test plan and test results.

Nonlinear characterization of GaN HEMT

International Nuclear Information System (INIS)

Chen Chi; Hao Yue; Yang Ling; Quan Si; Ma Xiaohua; Zhang Jincheng

2010-01-01

DC I-V output, small signal and an extensive large signal characterization (load-pull measurements) of a GaN HEMT on a SiC substrate with different gate widths of 100 μm and 1 mm have been carried out. From the small signal data, it has been found that the cutoff frequencies increase with gate width varying from 100 μm to 1mm, owing to the reduced contribution of the parasitic effect. The devices investigated with different gate widths are enough to work in the C band and X band. The large signal measurements include the load-pull measurements and power sweep measurements at the C band (5.5 GHz) and X band (8 GHz). When biasing the gate voltage in class AB and selecting the source impedance, the optimum load impedances seen from the device for output power and PAE were localized in the load-pull map. The results of a power sweep at an 8 GHz biased various drain voltage demonstrate that a GaN HEMT on a SiC substrate has good thermal conductivity and a high breakdown voltage, and the CW power density of 10.16 W/mm was obtained. From the results of the power sweep measurement at 5.5 GHz with different gate widths, the actual scaling rules and heat effect on the large periphery device were analyzed, although the effects are not serious. The measurement results and analyses prove that a GaN HEMT on a SiC substrate is an ideal candidate for high-power amplifier design.

Photonic-band-gap gyrotron amplifier with picosecond pulses

Science.gov (United States)

Nanni, Emilio A.; Jawla, Sudheer; Lewis, Samantha M.; Shapiro, Michael A.; Temkin, Richard J.

2017-12-01

We report the amplification of 250 GHz pulses as short as 260 ps without observation of pulse broadening using a photonic-band-gap circuit gyrotron traveling-wave-amplifier. The gyrotron amplifier operates with a device gain of 38 dB and an instantaneous bandwidth of 8 GHz. The operational bandwidth of the amplifier can be tuned over 16 GHz by adjusting the operating voltage of the electron beam and the magnetic field. The amplifier uses a 30 cm long photonic-band-gap interaction circuit to confine the desired TE03-like operating mode while suppressing lower order modes which can result in undesired oscillations. The circuit gain is >55 dB for a beam voltage of 23 kV and a current of 700 mA. These results demonstrate the wide bandwidths and a high gain achievable with gyrotron amplifiers. The amplification of picosecond pulses of variable lengths, 260-800 ps, shows good agreement with the theory using the coupled dispersion relation and the gain-spectrum of the amplifier as measured with quasi-CW input pulses.

Zero-phonon line and fine structure of the yellow luminescence band in GaN

Science.gov (United States)

Reshchikov, M. A.; McNamara, J. D.; Zhang, F.; Monavarian, M.; Usikov, A.; Helava, H.; Makarov, Yu.; Morkoç, H.

2016-07-01

The yellow luminescence band was studied in undoped and Si-doped GaN samples by steady-state and time-resolved photoluminescence. At low temperature (18 K), the zero-phonon line (ZPL) for the yellow band is observed at 2.57 eV and attributed to electron transitions from a shallow donor to a deep-level defect. At higher temperatures, the ZPL at 2.59 eV emerges, which is attributed to electron transitions from the conduction band to the same defect. In addition to the ZPL, a set of phonon replicas is observed, which is caused by the emission of phonons with energies of 39.5 meV and 91.5 meV. The defect is called the YL1 center. The possible identity of the YL1 center is discussed. The results indicate that the same defect is responsible for the strong YL1 band in undoped and Si-doped GaN samples.

S-band low noise amplifier and 40 kW high power amplifier subsystems of Japanese Deep Space Earth Station

Science.gov (United States)

Honma, K.; Handa, K.; Akinaga, W.; Doi, M.; Matsuzaki, O.

This paper describes the design and the performance of the S-band low noise amplifier and the S-band high power amplifier that have been developed for the Usuda Deep Space Station of the Institute of Space and Astronautical Science (ISAS), Japan. The S-band low noise amplifier consists of a helium gas-cooled parametric amplifier followed by three-stage FET amplifiers and has a noise temperature of 8 K. The high power amplifier is composed of two 28 kW klystrons, capable of transmitting 40 kW continuously when two klystrons are combined. Both subsystems are operating quite satisfactorily in the tracking of Sakigake and Suisei, the Japanese interplanetary probes for Halley's comet exploration, launched by ISAS in 1985.

Ka-band SAR interferometry studies for the SWOT mission

Science.gov (United States)

Fernandez, D. E.; Fu, L.; Rodriguez, E.; Hodges, R.; Brown, S.

2008-12-01

The primary objective of the NRC Decadal Survey recommended SWOT (Surface Water and Ocean Topography) Mission is to measure the water elevation of the global oceans, as well as terrestrial water bodies (such as rivers, lakes, reservoirs, and wetlands), to answer key scientific questions on the kinetic energy of ocean circulation, the spatial and temporal variability of the world's surface freshwater storage and discharge, and to provide societal benefits on predicting climate change, coastal zone management, flood prediction, and water resources management. The SWOT mission plans to carry the following suite of microwave instruments: a Ka-band interferometer, a dual-frequency nadir altimeter, and a multi-frequency water-vapor radiometer dedicated to measuring wet tropospheric path delay to correct the radar measurements. We are currently funded by the NASA Earth Science Technology Office (ESTO) Instrument Incubator Program (IIP) to reduce the risk of the main technological drivers of SWOT, by addressing the following technologies: the Ka-band radar interferometric antenna design, the on-board interferometric SAR processor, and the internally calibrated high-frequency radiometer. The goal is to significantly enhance the readiness level of the new technologies required for SWOT, while laying the foundations for the next-generation missions to map water elevation for studying Earth. The first two technologies address the challenges of the Ka-band SAR interferometry, while the high- frequency radiometer addresses the requirement for small-scale wet tropospheric corrections for coastal zone applications. In this paper, we present the scientific rational, need and objectives behind these technology items currently under development.

A K/Ka band radiating element for Tx/Rx phased array

KAUST Repository

Sandhu, Ali Imran; Arnieri, E.; Amendola, G.; Boccia, L.; Meniconi, E.; Ziegler, V.

2017-01-01

The paper presents a K/Ka band radiating element for TX/RX phased arrays. Dual band operations is obtained using a single radiating surface: a novel radiator is adopted and placed in a configuration in which dual band and single band elements are interleaved. The array elements are optimized to scan the beam in excess of 50° in both bands. A subarray with 49 Rx elements and 105 Tx elements was built and measured confirming the results obtained in simulations.

A K/Ka band radiating element for Tx/Rx phased array

KAUST Repository

Sandhu, Ali Imran

2017-01-20

The paper presents a K/Ka band radiating element for TX/RX phased arrays. Dual band operations is obtained using a single radiating surface: a novel radiator is adopted and placed in a configuration in which dual band and single band elements are interleaved. The array elements are optimized to scan the beam in excess of 50° in both bands. A subarray with 49 Rx elements and 105 Tx elements was built and measured confirming the results obtained in simulations.

Modelling the metal–semiconductor band structure in implanted ohmic contacts to GaN and SiC

International Nuclear Information System (INIS)

Pérez-Tomás, A; Fontserè, A; Placidi, M; Jennings, M R; Gammon, P M

2013-01-01

Here we present a method to model the metal–semiconductor (M–S) band structure to an implanted ohmic contact to a wide band gap semiconductor (WBG) such as GaN and SiC. The performance and understanding of the M–S contact to a WBG semiconductor is of great importance as it influences the overall performance of a semiconductor device. In this work we explore in a numerical fashion the ohmic contact properties to a WBG semiconductor taking into account the partial ionization of impurities and analysing its dependence on the temperature, the barrier height, the impurity level band energy and carrier concentration. The effect of the M–S Schottky barrier lowering and the Schottky barrier inhomogeneities are discussed. The model is applied to a fabricated ohmic contact to GaN where the M–S band structure can be completely determined. (paper)

Full Ka Band Waveguide-to-Microstrip Inline Transition Design

Science.gov (United States)

Li, Jianxing; Li, Lei; Qiao, Yu; Chen, Juan; Chen, Jianzhong; Zhang, Anxue

2018-05-01

In this paper, a compact and broadband inline waveguide-to-microstrip transition is proposed to cover the full Ka band. The transition can be segmented from the electric point of view into three building blocks, comprising a microstrip line to rectangular coaxial line, a wedged rectangular coaxial line to ridged waveguide, and a final tapered ridged waveguide impedance transformer to standard waveguide. Both good electrical performance and simple modular assembly without any soldering have been simultaneously obtained. The validation of the design concept has been conducted by numerical simulations and experimental measurements. The experimental results of a fabricated back-to-back transition prototype coincide with the simulated results. It shows that the proposed transition achieves good return loss of lower than 15.5 dB and low insertion loss with a fluctuation between 0.23 to 0.60 dB across the entire Ka band. Details of design considerations and operation mechanism as well as simulation and measurement results are presented.

Miniaturized Ka-Band Dual-Channel Radar

Science.gov (United States)

Hoffman, James P.; Moussessian, Alina; Jenabi, Masud; Custodero, Brian

2011-01-01

Smaller (volume, mass, power) electronics for a Ka-band (36 GHz) radar interferometer were required. To reduce size and achieve better control over RFphase versus temperature, fully hybrid electronics were developed for the RF portion of the radar s two-channel receiver and single-channel transmitter. In this context, fully hybrid means that every active RF device was an open die, and all passives were directly attached to the subcarrier. Attachments were made using wire and ribbon bonding. In this way, every component, even small passives, was selected for the fabrication of the two radar receivers, and the devices were mounted relative to each other in order to make complementary components isothermal and to isolate other components from potential temperature gradients. This is critical for developing receivers that can track each other s phase over temperature, which is a key mission driver for obtaining ocean surface height. Fully hybrid, Ka-band (36 GHz) radar transmitter and dual-channel receiver were developed for spaceborne radar interferometry. The fully hybrid fabrication enables control over every aspect of the component selection, placement, and connection. Since the two receiver channels must track each other to better than 100 millidegrees of RF phase over several minutes, the hardware in the two receivers must be "identical," routed the same (same line lengths), and as isothermal as possible. This level of design freedom is not possible with packaged components, which include many internal passive, unknown internal connection lengths/types, and often a single orientation of inputs and outputs.

Improvement of Ka-band satellite link availability for real-time IP-based video contribution

Directory of Open Access Journals (Sweden)

G. Berretta

2017-09-01

Full Text Available New High Throughput Satellite (HTS systems allow high throughput IP uplinks/contribution at Ka-band frequencies for relatively lower costs when compared to broadcasting satellite uplinks at Ku band. This technology offers an advantage for live video contribution from remote areas, where the terrestrial infrastructure may not be adequate. On the other hand, the Ka-band is more subject to impairments due to rain or bad weather. This paper addresses the target system specification and provides an optimized approach for the transmission of IP-based video flows through HTS commercial services operating at Ka-band frequencies. In particular, the focus of this study is on the service requirements and the propagation analysis that provide a reference architecture to improve the overall link availability. The approach proposed herein leads to the introduction of a new concept of live service contribution using pairs of small satellite antennas and cheap satellite terminals.

Additive manufacturing of Ka-band antennas for wireless communications

DEFF Research Database (Denmark)

Armendariz, Unai; Rommel, Simon; Rodríguez Páez, Juan Sebastián

2016-01-01

This paper presents the design and fabrication of WR-28 waveguide horn antennas operating in the Ka-band frequency range between 26.5 GHz and 40 GHz through 3D printing. Three different antennas are fabricated from polylactide acid filaments in conductive and non-conductive variants; the latter i...

Ka-band InSAR Imaging and Analysis Based on IMU Data

Directory of Open Access Journals (Sweden)

Shi Jun

2014-02-01

Full Text Available Compared with other bands, the millimeter wave Interferometric Synthetic Aperture Radar (InSAR has high accuracy and small size, which is a hot topic in InSAR research. On the other hand, shorter wavelength causes difficulties in 2D imaging and interferometric phase extraction. In this study, the imaging and phase performance of the streaming Back Projection (BP method combined with IMU data are analyzed and discussed on the basis of actual Ka-band InSAR data. It is found that because the wavelength of the Ka-band is short, it is more sensitive to the antenna phase-center history. To ensure the phase-preserving capacity, the IMU data must be used with accurate motion error compensation. Furthermore, during data processing, we verify the flat-earth-removing capacity of the BP algorithm that calculates and compensates the master and slave antenna phase centers individually.

Transistorized wide band pulse amplifier; Amplificateur d'impulsions a large bande et a transistors

Energy Technology Data Exchange (ETDEWEB)

Girard, J; Savinelli, H [Commissariat a l' Energie Atomique, Saclay (France).Centre d' Etudes Nucleaires; Hazoni, Y [Atomic Energy Commission (Israel)

1960-07-01

A simple wide band amplifier is described below, having a stability better than 1{sup 0}/00 deg{sup -1} centigrade, a current gain of 10{sup 3}, bandwidth of 30 MHz, and a signal to noise current ratio of about 100. This amplifier has been studied to answer the necessity of a fast transistor head amplifier for nuclear detectors, having in mind pile up and overloading problems. (author) [French] Un amplificateur simple, a large bande, est decrit ci-apres, il a une stabilite meilleure que le 0/00 par degre centigrade, un gain en courant de 10{sup 3} une largeur de bande de 30 MHz, et un rapport signal sur bruit en courant d'environ 100. Cet amplificateur a ete etudie pour repondre a la necessite de l'amplification des impulsions provenant de detecteurs nucleaires, ayant a l'esprit les problemes d'empilement et de saturation. (auteur)

Ferroelectric switch for a high-power Ka-band active pulse compressor

Energy Technology Data Exchange (ETDEWEB)

Hirshfield, Jay L. [Omega-P, Inc., New Haven, CT (United States)

2013-12-18

Results are presented for design of a high-power microwave switch for operation at 34.3 GHz, intended for use in an active RF pulse compressor. The active element in the switch is a ring of ferroelectric material, whose dielectric constant can be rapidly changed by application of a high-voltage pulse. As envisioned, two of these switches would be built into a pair of delay lines, as in SLED-II at SLAC, so as to allow 30-MW μs-length Ka-band pulses to be compressed in time by a factor-of-9 and multiplied in amplitude to generate 200 MW peak power pulses. Such high-power pulses could be used for testing and evaluation of high-gradient mm-wave accelerator structures, for example. Evaluation of the switch design was carried out with an X-band (11.43 GHz) prototype, built to incorporate all the features required for the Ka-band version.

High Efficiency S-Band 20 Watt Amplifier

Data.gov (United States)

National Aeronautics and Space Administration — This project includes the design and build of a prototype 20 W, high efficiency, S-Band amplifier.   The design will incorporate the latest semiconductor technology,...

2.45 GHz Class E Power Amplifier for a Transmitter Combining LINC and EER

Directory of Open Access Journals (Sweden)

M. Dirix

2009-01-01

Full Text Available A 10 W class-E RF power amplifier (PA is designed and fabricated using a Cree GaN HEMT. The proposed PA uses an innovative input circuit to optimize band with. At 2.45 GHz the PA achieves a PAE of 60 % at an outputpower of 40 dBm. The resulting amplifier is simulated and constructed using a transmissionline topology. Two of these amplifiers are fabricated on a single board for outphasing application. Their suitability for outphasing application and supply modulation is investigated. 

Electromagnetic Properties of Graphene-like Films in Ka-Band

Directory of Open Access Journals (Sweden)

Sofia Voronovich

2014-05-01

Full Text Available We studied electromagnetic properties of pyrolytic carbon (PyC films with thicknesses from 9 nm to 110 nm. The PyC films consisted of randomly oriented and intertwined graphene flakes with a typical size of a few nanometers were synthesized by chemical vapor deposition (CVD at 1100 °C on a quartz substrate. The reflectance and transmittance of these films in Ka-band, 26–37 GHz, were studied both experimentally and theoretically. The discovered remarkably high absorption loss of up to 50% of incident power, along with chemical stability, makes PyC films attractive for electromagnetic (EM interference shielding in space and airspace communication systems, as well as in portable electronic devices occupying this frequency slot. Since, in practical applications, the PyC film should be employed for coating of dielectric surfaces, two important issues to be addressed are: (i which side (front or back of the substrate should be covered to ensure maximum absorption losses; and (ii the frequency dependence of absorbance/transmittance/reflectance of binary PyC/quartz structures in the Ka-band.

AlGaN/GaN-HEMT power amplifiers with optimized power-added efficiency for X-band applications

OpenAIRE

Kühn, J.

2011-01-01

This work has arisen out of the strong demand for a superior power-added efficiency (PAE) of AlGaN/GaN high electron mobility transistor (HEMT) high-power amplifiers (HPAs) that are part of any advanced wireless multifunctional RF-system with limited prime energy. Different concepts and approaches on device and design level for PAE improvements are analyzed, e.g. structural and layout changes of the GaN transistor and advanced circuit design techniques for PAE improvements of GaN HEMT HPAs.

Electron band bending of polar, semipolar and non-polar GaN surfaces

Czech Academy of Sciences Publication Activity Database

Bartoš, Igor; Romanyuk, Olexandr; Houdková, Jana; Paskov, P.P.; Paskova, T.; Jiříček, Petr

2016-01-01

Roč. 119, č. 10 (2016), 1-7, č. článku 105303. ISSN 0021-8979 R&D Projects: GA ČR GA15-01687S Grant - others:AVČR(CZ) M100101201 Institutional support: RVO:68378271 Keywords : GaN * XPS * band bending Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.068, year: 2016

Influence of a deep-level-defect band formed in a heavily Mg-doped GaN contact layer on the Ni/Au contact to p-GaN

International Nuclear Information System (INIS)

Li Xiao-Jing; Zhao De-Gang; Jiang De-Sheng; Chen Ping; Zhu Jian-Jun; Liu Zong-Shun; Yang Jing; He Xiao-Guang; Yang Hui; Zhang Li-Qun; Zhang Shu-Ming; Le Ling-Cong; Liu Jian-Ping

2015-01-01

The influence of a deep-level-defect (DLD) band formed in a heavily Mg-doped GaN contact layer on the performance of Ni/Au contact to p-GaN is investigated. The thin heavily Mg-doped GaN (p ++ -GaN) contact layer with DLD band can effectively improve the performance of Ni/Au ohmic contact to p-GaN. The temperature-dependent I–V measurement shows that the variable-range hopping (VRH) transportation through the DLD band plays a dominant role in the ohmic contact. The thickness and Mg/Ga flow ratio of p ++ -GaN contact layer have a significant effect on ohmic contact by controlling the Mg impurity doping and the formation of a proper DLD band. When the thickness of the p ++ -GaN contact layer is 25 nm thick and the Mg/Ga flow rate ratio is 10.29%, an ohmic contact with low specific contact resistivity of 6.97× 10 −4 Ω·cm 2 is achieved. (paper)

Electron band bending and surface sensitivity: X-ray photoelectron spectroscopy of polar GaN surfaces

Czech Academy of Sciences Publication Activity Database

Bartoš, Igor; Romanyuk, Olexandr; Paskova, T.; Jiříček, Petr

2017-01-01

Roč. 664, Oct (2017), s. 241-245 ISSN 0039-6028 R&D Projects: GA ČR(CZ) GBP108/12/G108; GA MŠk LM2015088 Institutional support: RVO:68378271 Keywords : GaN * XPS * band banding Subject RIV: BM - Solid Matter Physics ; Magnetism OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.) Impact factor: 2.062, year: 2016

Ka-Band AlGaN/GaN HEMT high power and driver amplifier MMICs

NARCIS (Netherlands)

Heijningen, M. van; Vliet, F.E. van; Quay, R.; Raay, F. van; Kiefer, R.; Mueller, S.; Krausse, D.; Seelmann-Eggebert, M.; Mikulla, M.; Schlechtweg, M.

2005-01-01

In this paper the MMIC technology, design and characterization of a high power amplifier and driver amplifier MMIC at 30 GHz in AlGaN/GaN HEMT technology are presented. The MMICs are designed using CPW technology on a 390 μm thick SiC substrate. The measured small-signal gain of the driver is 14 dB

Ka Band Phase Locked Loop Oscillator Dielectric Resonator Oscillator for Satellite EHF Band Receiver

Directory of Open Access Journals (Sweden)

S. Coco

2008-01-01

Full Text Available This paper describes the design and fabrication of a Ka Band PLL DRO having a fundamental oscillation frequency of 19.250 GHz, used as local oscillator in the low-noise block of a down converter (LNB for an EHF band receiver. Apposite circuital models have been created to describe the behaviour of the dielectric resonator and of the active component used in the oscillator core. The DRO characterization and measurements have shown very good agreement with simulation results. A good phase noise performance is obtained by using a very high Q dielectric resonator.

Gallium nitride based transistors for high-efficiency microwave switch-mode amplifiers

Energy Technology Data Exchange (ETDEWEB)

Maroldt, Stephan

2012-07-01

Highly-efficient switch-mode power amplifiers form key elements in future fully-digital base stations for mobile communication. This novel digital base station concept reduces system energy consumption, complexity, size and costs, while the flexibility in terms of multi-band operation and signal modulation improves. In this work, innovative core circuits for digital high-efficiency class-D and class-S power amplifiers based on gallium nitride (GaN) technology were developed for the application in digital base stations. A combination of optimized GaN devices and improvements in circuit design allow a highly-efficient switch-mode operation at mobile communication frequencies between 0.45 GHz and 2 GHz. Transistor device modeling for switch-mode operation, the simulation environment, and a broadband measurement system were established for the design and evaluation of digital switchmode power amplifiers. The design of broadband core circuits for switch-mode amplifier concepts was analyzed for dual-stage amplifier circuits, using an initial GaN technology with a gate length of 0.25 {mu}m. A speed-enhanced driver stage improved the circuit switching speed sufficiently above 1 GHz. Speed and efficiency of the amplifier core circuits were studied related to transistor parameters like cut-off frequency or gate capacitance. A reduced gate length was found to improve the switching speed, while a lower on-resistance allows the reduction of the inherent static losses of the GaN-based switches. Apart from this, the restriction of a 50 Ohm environment was found to be a major output power and switching speed limitation, due to a poor switching drive capability of the input capacitance of the GaN circuit. Finally, the optimized transistor and circuit design with an output gate width of 1.2 mm were effectively implemented in the given environment for an operation up to 2 GHz with a high drain efficiency of >65% and a digital output power of 5 W. A maximum output power of 9.7 W and a

Partially Observable Markov Decision Process-Based Transmission Policy over Ka-Band Channels for Space Information Networks

Directory of Open Access Journals (Sweden)

Jian Jiao

2017-09-01

Full Text Available The Ka-band and higher Q/V band channels can provide an appealing capacity for the future deep-space communications and Space Information Networks (SIN, which are viewed as a primary solution to satisfy the increasing demands for high data rate services. However, Ka-band channel is much more sensitive to the weather conditions than the conventional communication channels. Moreover, due to the huge distance and long propagation delay in SINs, the transmitter can only obtain delayed Channel State Information (CSI from feedback. In this paper, the noise temperature of time-varying rain attenuation at Ka-band channels is modeled to a two-state Gilbert–Elliot channel, to capture the channel capacity that randomly ranging from good to bad state. An optimal transmission scheme based on Partially Observable Markov Decision Processes (POMDP is proposed, and the key thresholds for selecting the optimal transmission method in the SIN communications are derived. Simulation results show that our proposed scheme can effectively improve the throughput.

Multiple scattering effects on the Linear Depolarization Ratio (LDR) measured during CaPE by a Ka-band air-borne radar

Science.gov (United States)

Iguchi, Toshio; Meneghini, Robert

1993-01-01

Air-borne radar measurements of thunderstorms were made as part of the CaPE (Convection and Precipitation/Electrification) experiment in Florida in July 1991. The radar has two channels, X-band (10 GHz) and Ka-band (34.5 GHz), and is capable of measuring cross-polarized returns as well as co-polarized returns. In stratiform rain, the cross-polarized components can be observed only at the bright band region and from the surface reflection. The linear depolarization ratios (LDR's) measured at X-band and Ka-band at the bright band are nearly equal. In convective rain, however, the LDR in Ka-band often exceeds the X-band LDR by several dB, and sometimes by more than 10 dB, reaching LDR values of up to -5 dB over heavy convective rain. For randomly oriented hydrometeors, such high LDR values cannot be explained by single scattering from non-spherical scattering particles alone. Because the LDR by single backscatter depends weakly on the wavelength, the difference between the Ka-band and X-band LDR's suggests that multiple scattering effects prevail in the Ka-band LDR. In order to test this inference, the magnitude of the cross-polarized component created by double scattering was calculated using the parameters of the airborne radar, which for both frequencies has beamwidths of 5.1 degrees and pulse widths of 0.5 microsecond. Uniform rain beyond the range of 3 km is assumed.

Field plated 0.15 μm GaN HEMTs for millimeter-wave application

International Nuclear Information System (INIS)

Ren Chunjiang; Li Zhonghui; Yu Xuming; Wang Quanhui; Wang Wen; Chen Tangsheng; Zhang Bin

2013-01-01

SiN dielectrically-defined 0.15 μm field plated GaN HEMTs for millimeter-wave application have been presented. The AlGaN/GaN hetero-structure epitaxial material for HEMTs fabrication was grown on a 3-inch SiC substrate with an Fe doped GaN buffer layer by metal-organic chemical deposition. Electron beam lithography was used to define both the gate footprint and the cap of the gate with an integrated field plate. Gate recessing was performed to control the threshold voltage of the devices. The fabricated GaN HEMTs exhibited a unit current gain cut-off frequency of 39 GHz and a maximum frequency of oscillation of 63 GHz. Load-pull measurements carried out at 35 GHz showed a power density of 4 W/mm with associated power gain and power added efficiency of 5.3 dB and 35%, respectively, for a 0.15 mm gate width device operated at a 24 V drain bias. The developed 0.15 μm gate length GaN HEMT technology is suitable for Ka band applications and is ready for millimeter-wave power MMICs development. (semiconductor devices)

CMOS 60-GHz and E-band power amplifiers and transmitters

CERN Document Server

Zhao, Dixian

2015-01-01

This book focuses on the development of design techniques and methodologies for 60-GHz and E-band power amplifiers and transmitters at device, circuit and layout levels. The authors show the recent development of millimeter-wave design techniques, especially of power amplifiers and transmitters, and presents novel design concepts, such as “power transistor layout” and “4-way parallel-series power combiner”, that can enhance the output power and efficiency of power amplifiers in a compact silicon area. Five state-of-the-art 60-GHz and E-band designs with measured results are demonstrated to prove the effectiveness of the design concepts and hands-on methodologies presented. This book serves as a valuable reference for circuit designers to develop millimeter-wave building blocks for future 5G applications.

Solid-State Powered X-band Accelerator

Energy Technology Data Exchange (ETDEWEB)

Othman, Mohamed A.K. [SLAC National Accelerator Lab., Menlo Park, CA (United States); Nann, Emilio A. [SLAC National Accelerator Lab., Menlo Park, CA (United States); Dolgashev, Valery A. [SLAC National Accelerator Lab., Menlo Park, CA (United States); Tantawi, Sami [SLAC National Accelerator Lab., Menlo Park, CA (United States); Neilson, Jeff [SLAC National Accelerator Lab., Menlo Park, CA (United States)

2017-03-06

In this report we disseminate the hot test results of an X-band 100-W solid state amplifier chain for linear accelerator (linac) applications. Solid state power amplifiers have become increasingly attractive solutions for achieving high power in radar and maritime applications. Here the performance of solid state amplifiers when driving an RF cavity is investigated. Commercially available, matched and fully-packaged GaN on SiC HEMTs are utilized, comprising a wideband driver stage and two power stages. The amplifier chain has a high poweradded- efficiency and is able to supply up to ~1.2 MV/m field gradient at 9.2 GHz in a simple test cavity, with a peak power exceeding 100 W. These findings set forth the enabling technology for solid-state powered linacs.

Design and Characterization of a 6 W GaN HEMT Microwave Power Amplifier with Digital Predistortion Linearization

OpenAIRE

Mitrevski, Dragan

2011-01-01

In this thesis, characterization of a 6W GaN HEMT power amplifier for optimal operating conditions through load pull simulations and measurements is investigated.The purpose is to find source and load impedances to achieve for instance maximum efficiency and maximum output power, and investigate whether thesimulated results can be replicated in a measurement setup. Simulations show that when matching for maximum output power, a peak output power of 13W is achieved, while in 1 dB compression, ...

A New Blind Pointing Model Improves Large Reflector Antennas Precision Pointing at Ka-Band (32 GHz)

Science.gov (United States)

Rochblatt, David J.

2009-01-01

The National Aeronautics and Space Administration (NASA), Jet Propulsion Laboratory (JPL)-Deep Space Network (DSN) subnet of 34-m Beam Waveguide (BWG) Antennas was recently upgraded with Ka-Band (32-GHz) frequency feeds for space research and communication. For normal telemetry tracking a Ka-Band monopulse system is used, which typically yields 1.6-mdeg mean radial error (MRE) pointing accuracy on the 34-m diameter antennas. However, for the monopulse to be able to acquire and lock, for special radio science applications where monopulse cannot be used, or as a back-up for the monopulse, high-precision open-loop blind pointing is required. This paper describes a new 4th order pointing model and calibration technique, which was developed and applied to the DSN 34-m BWG antennas yielding 1.8 to 3.0-mdeg MRE pointing accuracy and amplitude stability of 0.2 dB, at Ka-Band, and successfully used for the CASSINI spacecraft occultation experiment at Saturn and Titan. In addition, the new 4th order pointing model was used during a telemetry experiment at Ka-Band (32 GHz) utilizing the Mars Reconnaissance Orbiter (MRO) spacecraft while at a distance of 0.225 astronomical units (AU) from Earth and communicating with a DSN 34-m BWG antenna at a record high rate of 6-megabits per second (Mb/s).

C.A.D for broad-band multistage microwave transimpedance amplifier.

OpenAIRE

Olomo Ngongo, A.; Perennec, A.; Soares, R.; Jarry, P.

1992-01-01

In high data rate optical-fiber, it is necessary to employ an ultra broad-band transimpedance amplifier. In this paper, we present a technique for the design of a transimpedance amplifiers. It can be applied as well to the design of interstage equalizers for microwave transimpedance amplifiers. In the version described in this paper, the optimisation process is applied to the transimpedance gain and noise which is adjusted. Based on the load charge matching technique, a sequential procedure t...

Synthetic Strategies and Applications of GaN Nanowires

Directory of Open Access Journals (Sweden)

Guoquan Suo

2014-01-01

Full Text Available GaN is an important III-V semiconductor material with a direct band gap of 3.4 eV at 300 K. The wide direct band gap makes GaN an attractive material for various applications. GaN nanowires have demonstrated significant potential as fundamental building blocks for nanoelectronic and nanophotonic devices and also offer substantial promise for integrated nanosystems. In this paper, we provide a comprehensive review on the general synthetic strategies, characterizations, and applications of GaN nanowires. We first summarize several growth techniques of GaN nanowires. Subsequently, we discuss mechanisms involved to generate GaN nanowires from different synthetic schemes and conditions. Then we review some characterization methods of GaN nanowires. Finally, several kinds of main applications of GaN nanowires are discussed.

AltiKa: a Ka-band Altimetry Payload and System for Operational Altimetry during the GMES Period

Directory of Open Access Journals (Sweden)

Jacques Verron

2006-03-01

Full Text Available This paper describes the Ka-band altimetry payload and system that has beenstudied for several years by CNES, ALCATEL SPACE and some science laboratories.Altimetry is one of the major elements of the ocean observing system to be madesustainable through the GEOSS (Global Earth Observation System of Systems and GMES(Global Monitoring of the Environment and Security programs. A short review of somemission objectives to be fulfilled in terms of mesoscale oceanography in the frame of theGEOSS and GMES programs is performed. To answer the corresponding requirements, theapproach consisting in a constellation of nadir altimeter is discussed. A coupled Ka-bandaltimeter-radiometer payload is then described; technical items are detailed to explain howthis payload shall meet the science and operational requirements, and expectedperformances are displayed. The current status of the payload development and flightperspectives are given.

Transmission characteristic of graphene/TiO2 paper measured at Ka-band

Science.gov (United States)

Agusu, La; Mitsudo, Seitaro; Ahmad, La Ode; Herdianto, Fujii, Yutaka; Ishikawa, Yuya; Furuya, Takahashi; Ramadhan, La Ode Ahmad Nur

2017-01-01

The commercial telecommunication system in future would explore the electromagnetic spectrum with higher frequency than used now, because it requires higher speed of transmission data. Using the millimeter waves (mmW) with frequency ranging from 30 to 300 GHz, such requirement could be fulfilled. The upcoming 5G cellular technology is expected to use frequency 30 GHz or higher. Then materials with a specific characteristic at the mmW range are interesting to be explored and investigated. Here, we report the synthesis process of graphene/TiO2 deposited on paper and their transmission characteristics to the electromagnetic energy at frequency 27-40 GHz (Ka-Band). The reduced graphene oxide (rGO) was synthesized by a modified Hummers method with introduction of microwave irradiation in the process. rGO and TiO2 were mixed in ethanol solution and deposited on the paper by a spraying technique. Transmission coefficient of electromagnetic wave energy at Ka-Band was measured by using the millimeter vector network analyzer. Conductivity of rGO is 1.89 Scm-1 and for the graphene/TiO2 with TiO2 content is up to 50%, conductivity is down to Scm-1 Graphene/TiO2 layer with thickness of 60).lm and TiO2 loading up to 25% can has the transmission coefficient of -4 dB at the middle frequency of 31 GHz and bandwidth of 2.2 GHz. This can be useful as the electromagnetic interference shielding material at Ka-band.

NASA developments in solid state power amplifiers

Science.gov (United States)

Leonard, Regis F.

1990-01-01

Over the last ten years, NASA has undertaken an extensive program aimed at development of solid state power amplifiers for space applications. Historically, the program may be divided into three phases. The first efforts were carried out in support of the advanced communications technology satellite (ACTS) program, which is developing an experimental version of a Ka-band commercial communications system. These first amplifiers attempted to use hybrid technology. The second phase was still targeted at ACTS frequencies, but concentrated on monolithic implementations, while the current, third phase, is a monolithic effort that focusses on frequencies appropriate for other NASA programs and stresses amplifier efficiency. The topics covered include: (1) 20 GHz hybrid amplifiers; (2) 20 GHz monolithic MESFET power amplifiers; (3) Texas Instruments' (TI) 20 GHz variable power amplifier; (4) TI 20 GHz high power amplifier; (5) high efficiency monolithic power amplifiers; (6) GHz high efficiency variable power amplifier; (7) TI 32 GHz monolithic power amplifier performance; (8) design goals for Hughes' 32 GHz variable power amplifier; and (9) performance goals for Hughes' pseudomorphic 60 GHz power amplifier.

A Novel Application of Fourier Transform Spectroscopy with HEMT Amplifiers at Microwave Frequencies

Science.gov (United States)

Wilkinson, David T.; Page, Lyman

1995-01-01

The goal was to develop cryogenic high-electron-mobility transistor (HEMT) based radiometers and use them to measure the anisotropy in the cosmic microwave background (CMB). In particular, a novel Fourier transform spectrometer (FTS) built entirely of waveguide components would be developed. A dual-polarization Ka-band HEMT radiometer and a similar Q-band radiometer were built. In a series of measurements spanning three years made from a ground-based site in Saskatoon, SK, the amplitude, frequency spectrum, and spatial frequency spectrum of the anisotropy were measured. A prototype Ka-band FTS was built and tested, and a simplified version is proposed for the MAP satellite mission. The 1/f characteristics of HEMT amplifiers were quantified using correlation techniques.

Silicon rich nitride ring resonators for rare - earth doped telecommunications-band amplifiers pumped at the O-band.

Science.gov (United States)

Xing, P; Chen, G F R; Zhao, X; Ng, D K T; Tan, M C; Tan, D T H

2017-08-22

Ring resonators on silicon rich nitride for potential use as rare-earth doped amplifiers pumped at 1310 nm with amplification at telecommunications-band are designed and characterized. The ring resonators are fabricated on 300 nm and 400 nm silicon rich nitride films and characterized at both 1310 nm and 1550 nm. We demonstrate ring resonators exhibiting similar quality factors exceeding 10,000 simultaneously at 1310 nm and 1550 nm. A Dysprosium-Erbium material system exhibiting photoluminescence at 1510 nm when pumped at 1310 nm is experimentally demonstrated. When used together with Dy-Er co-doped particles, these resonators with similar quality factors at 1310 nm and 1550 nm may be used for O-band pumped amplifiers for the telecommunications-band.

X-ray absorption and reflection as probes of the GaN conduction bands: Theory and experiments

Energy Technology Data Exchange (ETDEWEB)

Lambrecht, W.R.L.; Rashkeev, S.N.; Segall, B. [Case Western Reserve Univ., Cleveland, OH (United States)] [and others

1997-04-01

X-ray absorption measurements are a well-known probe of the unoccupied states in a material. The same information can be obtained by using glancing angle X-ray reflectivity. In spite of several existing band structure calculations of the group III nitrides and previous optical studies in UV range, a direct probe of their conduction band densities of states is of interest. The authors performed a joint experimental and theoretical investigation using both of these experimental techniques for wurtzite GaN.

Wurtzite/zinc-blende electronic-band alignment in basal-plane stacking faults in semi-polar GaN

Science.gov (United States)

Monavarian, Morteza; Hafiz, Shopan; Izyumskaya, Natalia; Das, Saikat; Özgür, Ümit; Morkoç, Hadis; Avrutin, Vitaliy

2016-02-01

Heteroepitaxial semipolar and nonpolar GaN layers often suffer from high densities of extended defects including basal plane stacking faults (BSFs). BSFs which are considered as inclusions of cubic zinc-blende phase in wurtzite matrix act as quantum wells strongly affecting device performance. Band alignment in BSFs has been discussed as type of band alignment at the wurtzite/zinc blende interface governs the response in differential transmission; fast decay after the pulse followed by slow recovery due to spatial splitting of electrons and heavy holes for type- II band alignment in contrast to decay with no recovery in case of type I band alignment. Based on the results, band alignment is demonstrated to be of type II in zinc-blende segments in wurtzite matrix as in BSFs.

Design considerations on a sparse array antenna for Ka-band spaceborne SAR applications

NARCIS (Netherlands)

Jacobs, S.; Bekers, D.; Monni, S.; Otten, M.; Van Rossum, W.; Gerini, G.; Germani, C.; Fortini, D.; Toso, G.

2015-01-01

This contribution addresses the problem of designing a sparse active array antenna for spaceborne SAR applications at Ka-band. The main driver for the design is limiting the recurring manufacturing costs associated to the number of active modules, while preserving main performance and insuring a

Radiating Elements for Shared Aperture Tx/Rx Phased Arrays at K/Ka Band

KAUST Repository

Sandhu, Ali Imran; Arnieri, E.; Amendola, Giandomenico; Boccia, L.; Meniconi, Erika; Ziegler, Volker

2016-01-01

A dual band, Tx/Rx, self-diplexing phased array is presented. The antenna has been designed to cover Tx/Rx satellite communications at K/Ka band with a frequency ratio 1.5:1. To obtain dual band operations with a single radiating surface, a novel dual band radiator is adopted and placed in a configuration in which dual band and single band elements are interleaved. The proposed configuration reduces the number of radiating elements required by other solutions while avoiding the insurgence of grating lobes. The tightly packed arrangement of the elements poses many integration issues, which are solved with a novel integration technique. The array elements are optimized to scan the beam in excess of ° in both bands. A subarray with 49 Rx elements and 105 Tx elements was built and measured confirming the results obtained in simulations.

Radiating Elements for Shared Aperture Tx/Rx Phased Arrays at K/Ka Band

KAUST Repository

Sandhu, Ali Imran

2016-04-11

A dual band, Tx/Rx, self-diplexing phased array is presented. The antenna has been designed to cover Tx/Rx satellite communications at K/Ka band with a frequency ratio 1.5:1. To obtain dual band operations with a single radiating surface, a novel dual band radiator is adopted and placed in a configuration in which dual band and single band elements are interleaved. The proposed configuration reduces the number of radiating elements required by other solutions while avoiding the insurgence of grating lobes. The tightly packed arrangement of the elements poses many integration issues, which are solved with a novel integration technique. The array elements are optimized to scan the beam in excess of ° in both bands. A subarray with 49 Rx elements and 105 Tx elements was built and measured confirming the results obtained in simulations.

Thermal quenching of the yellow luminescence in GaN

Science.gov (United States)

Reshchikov, M. A.; Albarakati, N. M.; Monavarian, M.; Avrutin, V.; Morkoç, H.

2018-04-01

We observed varying thermal quenching behavior of the yellow luminescence band near 2.2 eV in different GaN samples. In spite of the different behavior, the yellow band in all the samples is caused by the same defect—the YL1 center. In conductive n-type GaN, the YL1 band quenches with exponential law, and the Arrhenius plot reveals an ionization energy of ˜0.9 eV for the YL1 center. In semi-insulating GaN, an abrupt and tunable quenching of the YL1 band is observed, where the apparent activation energy in the Arrhenius plot is not related to the ionization energy of the defect. In this case, the ionization energy can be found by analyzing the shift of the characteristic temperature of PL quenching with excitation intensity. We conclude that only one defect, namely, the YL1 center, is responsible for the yellow band in undoped and doped GaN samples grown by different techniques.

Dynamic optical fiber delivery of Ka-band packet transmissions for wireless access networks

DEFF Research Database (Denmark)

Rodríguez Páez, Juan Sebastián; Madsen, Peter; Tafur Monroy, Idelfonso

2017-01-01

A Reconfigurable Radio Access Unit is presented and experimentally demonstrated. In the unit, an optical switching system is set to dynamically deliver different packets to different points in the network. The packets are transmitted wirelesslty on the Ka-band (26–40 GHz), achieving BER values...

A novel Ka-band coaxial transit-time oscillator with a four-gap buncher

Energy Technology Data Exchange (ETDEWEB)

Song, Lili; He, Juntao; Ling, Junpu [College of Optoelectronic Science and Engineering, National University of Defense Technology, Changsha 410073 (China)

2015-05-15

A novel Ka-band coaxial transit-time oscillator (TTO) with a four-gap buncher is proposed and investigated. Simulation results show that an output power of 1.27 GW and a frequency of 26.18 GHz can be achieved with a diode voltage of 447 kV and a beam current of 7.4 kA. The corresponding power efficiency is 38.5%, and the guiding magnetic field is 0.6 T. Studies and analysis indicate that a buncher with four gaps can modulate the electron beam better than the three-gap buncher in such a Ka-band TTO. Moreover, power efficiency increases with the coupling coefficient between the buncher and the extractor. Further simulation demonstrates that power efficiency can reach higher than 30% with a guiding magnetic field of above 0.5 T. Besides, the power efficiency exceeds 30% in a relatively large range of diode voltage from 375 kV to 495 kV.

W-band InP based HEMT MMIC low noise amplifiers

Science.gov (United States)

Lin, K. Y.; Tang, Y. L.; Wang, H.; Gaier, T.; Gough, R. G.; Sinclair, M.

2002-01-01

This paper presents the designs and measurement results of a three-stage and a four-stage W-band monolithic microwave integrated circuits (MMIC) including a three-stage and a four-stage low noise amplifiers.

Ultra High Power and Efficiency Space Traveling-Wave Tube Amplifier Power Combiner with Reduced Size and Mass for NASA Missions

Science.gov (United States)

Simons, Rainee N.; Wintucky, Edwin G.; Wilson, Jeffrey D.; Force, Dale A.

2009-01-01

In the 2008 International Microwave Symposium (IMS) Digest version of our paper, recent advances in high power and efficiency space traveling-wave tube amplifiers (TWTAs) for NASA s space-to-Earth communications are presented. The RF power and efficiency of a new K-Band amplifier are 40 W and 50 percent and that of a new Ka-Band amplifier are 200 W and 60 percent. An important figure-of-merit, which is defined as the ratio of the RF power output to the mass (W/kg) of a TWT, has improved by a factor of ten over the previous generation Ka-Band devices. In this extended paper, a high power, high efficiency Ka-band combiner for multiple TWTs, based on a novel hybrid magic-T waveguide circuit design, is presented. The measured combiner efficiency is as high as 90 percent. In addition, at the design frequency of 32.05 GHz, error-free uncoded BPSK/QPSK data transmission at 8 megabits per second (Mbps), which is typical for deep space communications is demonstrated. Furthermore, QPSK data transmission at 622 Mbps is demonstrated with a low bit error rate of 2.4x10(exp -8), which exceeds the deep space state-of-the-art data rate transmission capability by more than two orders of magnitude. A potential application of the TWT combiner is in deep space communication systems for planetary exploration requiring transmitter power on the order of a kilowatt or higher.

Reconfigurable phased antenna array for extending cubesat operations to Ka-band: Design and feasibility

Science.gov (United States)

Buttazzoni, G.; Comisso, M.; Cuttin, A.; Fragiacomo, M.; Vescovo, R.; Vincenti Gatti, R.

2017-08-01

Started as educational tools, CubeSats have immediately encountered the favor of the scientific community, subsequently becoming viable platforms for research and commercial applications. To ensure competitive data rates, some pioneers have started to explore the usage of the Ka-band beside the conventional amateur radio frequencies. In this context, this study proposes a phased antenna array design for Ka-band downlink operations consisting of 8×8 circularly polarized subarrays of microstrip patches filling one face of a single CubeSat unit. The conceived structure is developed to support 1.5 GHz bandwidth and dual-task missions, whose feasibility is verified by proper link budgets. The dual-task operations are enabled by a low-complexity phase-only control algorithm that provides pattern reconfigurability in order to satisfy both orbiting and intersatellite missions, while remaining adherent to the cost-effective CubeSat paradigm.

Design of Ka-band antipodal finline mixer and detector

International Nuclear Information System (INIS)

Yao Changfei; Xu Jinping; Chen Mo

2009-01-01

This paper mainly discusses the analysis and design of a finline single-ended mixer and detector. In the circuit, for the purpose of eliminating high-order resonant modes and improving transition loss, metallic via holes are implemented along the mounting edge of the substrate embedded in the split-block of the WG-finline-microstrip transition. Meanwhile, a Ka band slow-wave and bandstop filter, which represents a reactive termination, is designed for the utilization of idle frequencies and operation frequencies energy. Full-wave analysis is carried out to optimize the input matching network of the mixer and the detector circuit using lumped elements to model the nonlinear diode. The exported S-matrix of the optimized circuit is used for conversion loss and voltage sensitivity analysis. The lowest measured conversion loss is 3.52 dB at 32.2 GHz; the conversion loss is flat and less than 5.68 dB in the frequency band of 29-34 GHz. The highest measured zero-bias voltage sensitivity is 1450 mV/mW at 38.6 GHz, and the sensitivity is better than 1000 mV/mW in the frequency band of 38-40 GHz.

A broadband high-efficiency Doherty power amplifier using symmetrical devices

Science.gov (United States)

Cheng, Zhiqun; Zhang, Ming; Li, Jiangzhou; Liu, Guohua

2018-04-01

This paper proposes a method for broadband and high-efficiency amplification of Doherty power amplifier (DPA) using symmetric devices. In order to achieve the perfect load modulation, the carrier amplifier output circuit total power length is designed to odd multiple of 90°, and the peak amplifier output total power length is designed to even multiple of 180°. The proposed method is demonstrated by designing a broadband high-efficiency DPA using identical 10-W packaged GaN HEMT devices. Measurement results show that over 51% drain efficiency is achieved at 6-dB back-off power, over the frequency band of 1.9–2.4 GHz. Project supported by the National Natural Science Foundation of China (No. 60123456), the Zhejiang Provincial Natural Science Foundation of China (No. LZ16F010001), and the Zhejiang Provincial Public Technology Research Project (No. 2016C31070).

Band offsets and growth mode of molecular beam epitaxy grown MgO (111) on GaN (0002) by x-ray photoelectron spectroscopy

Science.gov (United States)

Craft, H. S.; Collazo, R.; Losego, M. D.; Mita, S.; Sitar, Z.; Maria, J.-P.

2007-10-01

MgO is a proposed dielectric for use as a tunneling barrier in devices integrating GaN and ferroelectric oxides. In this study, we present data regarding the growth mode and band offsets of MgO grown epitaxially on GaN (0002) surfaces using molecular beam epitaxy. Using in situ x-ray photoelectron spectroscopy (XPS) and molecular beam epitaxy, we determine, from sequential growth experiments, that the growth of MgO proceeds via the Volmer-Weber (three-dimensional) mode, and full coalescence of the film does not occur until approximately 12nm of MgO has been deposited. The observation of a three-dimensional growth mode is in agreement with previously published data. For the valence band offset, we find a value of 1.2±0.2eV, which corresponds to a 3.2eV conduction band offset. XPS measurements suggest a chemically abrupt interface and no effect on band lineup due to the slow coalescence behavior.

Band offsets and growth mode of molecular beam epitaxy grown MgO (111) on GaN (0002) by x-ray photoelectron spectroscopy

International Nuclear Information System (INIS)

Craft, H. S.; Collazo, R.; Losego, M. D.; Mita, S.; Sitar, Z.; Maria, J.-P.

2007-01-01

MgO is a proposed dielectric for use as a tunneling barrier in devices integrating GaN and ferroelectric oxides. In this study, we present data regarding the growth mode and band offsets of MgO grown epitaxially on GaN (0002) surfaces using molecular beam epitaxy. Using in situ x-ray photoelectron spectroscopy (XPS) and molecular beam epitaxy, we determine, from sequential growth experiments, that the growth of MgO proceeds via the Volmer-Weber (three-dimensional) mode, and full coalescence of the film does not occur until approximately 12 nm of MgO has been deposited. The observation of a three-dimensional growth mode is in agreement with previously published data. For the valence band offset, we find a value of 1.2±0.2 eV, which corresponds to a 3.2 eV conduction band offset. XPS measurements suggest a chemically abrupt interface and no effect on band lineup due to the slow coalescence behavior

Growth of β-Ga2O3 and GaN nanowires on GaN for photoelectrochemical hydrogen generation

International Nuclear Information System (INIS)

Hwang, Jih-Shang; Liu, Tai-Yan; Chen, Han-Wei; Chattopadhyay, Surjit; Hsu, Geng-Ming; Basilio, Antonio M; Hsu, Yu-Kuei; Tu, Wen-Hsun; Lin, Yan-Gu; Chen, Kuei-Hsien; Li, Chien-Cheng; Wang, Sheng-Bo; Chen, Hsin-Yi; Chen, Li-Chyong

2013-01-01

Enhanced photoelectrochemical (PEC) performances of Ga 2 O 3 and GaN nanowires (NWs) grown in situ from GaN were demonstrated. The PEC conversion efficiencies of Ga 2 O 3 and GaN NWs have been shown to be 0.906% and 1.09% respectively, in contrast to their 0.581% GaN thin film counterpart under similar experimental conditions. A low crystallinity buffer layer between the grown NWs and the substrate was found to be detrimental to the PEC performance, but the layer can be avoided at suitable growth conditions. A band bending at the surface of the GaN NWs generates an electric field that drives the photogenerated electrons and holes away from each other, preventing recombination, and was found to be responsible for the enhanced PEC performance. The enhanced PEC efficiency of the Ga 2 O 3 NWs is aided by the optical absorption through a defect band centered 3.3 eV above the valence band of Ga 2 O 3 . These findings are believed to have opened up possibilities for enabling visible absorption, either by tailoring ion doping into wide bandgap Ga 2 O 3 NWs, or by incorporation of indium to form InGaN NWs. (paper)

Growth of β-Ga2O3 and GaN nanowires on GaN for photoelectrochemical hydrogen generation.

Science.gov (United States)

Hwang, Jih-Shang; Liu, Tai-Yan; Chattopadhyay, Surjit; Hsu, Geng-Ming; Basilio, Antonio M; Chen, Han-Wei; Hsu, Yu-Kuei; Tu, Wen-Hsun; Lin, Yan-Gu; Chen, Kuei-Hsien; Li, Chien-Cheng; Wang, Sheng-Bo; Chen, Hsin-Yi; Chen, Li-Chyong

2013-02-08

Enhanced photoelectrochemical (PEC) performances of Ga(2)O(3) and GaN nanowires (NWs) grown in situ from GaN were demonstrated. The PEC conversion efficiencies of Ga(2)O(3) and GaN NWs have been shown to be 0.906% and 1.09% respectively, in contrast to their 0.581% GaN thin film counterpart under similar experimental conditions. A low crystallinity buffer layer between the grown NWs and the substrate was found to be detrimental to the PEC performance, but the layer can be avoided at suitable growth conditions. A band bending at the surface of the GaN NWs generates an electric field that drives the photogenerated electrons and holes away from each other, preventing recombination, and was found to be responsible for the enhanced PEC performance. The enhanced PEC efficiency of the Ga(2)O(3) NWs is aided by the optical absorption through a defect band centered 3.3 eV above the valence band of Ga(2)O(3). These findings are believed to have opened up possibilities for enabling visible absorption, either by tailoring ion doping into wide bandgap Ga(2)O(3) NWs, or by incorporation of indium to form InGaN NWs.

Gain claming in single-pass and double-pass L-band erbium-doped fiber amplifiers

International Nuclear Information System (INIS)

Harun, S.W.; Ahmad, H.

2004-01-01

Gain clamping is demonstrated in single-pass and double-pass long wavelength band erbium-doped fiber amplifiers. A C/L-band wavelength division multiplexing coupler is used in single-pass system to generate a laser at 1566 nm. The gain for the amplifier is clamped at 15.5 dB with gain variation of less than 0.2 dB from input signal power of -40 to -14 dBm with almost negligible noise figure penalty. However, the flatness of gain spectrum is slightly degraded due to the un-optimisation of erbium-doped fiber length. The advantage of this configuration is that the oscillating light does not appear at the output of the amplifier. A highly efficient gain-clamped long wavelength band erbium-doped fiber amplifiers with improved noise figure characteristic is demonstrated by simply adding a broadband conventional band fiber Bragg grating in double pass system. The combination of the fiber Bragg grating and optical circulator has created laser in the cavity for gain clamping. By adjusting the power combination of pumps 1 and 2, the clamped gain level can be controlled. The amplifier gain is clamped at 28.1 dB from -40 to -25 dBm with gain variation of less than 0.5 dB by setting the pumps 1 and 2 at 59.5 and 50.6 mW, respectively. The gain is also flat from 1574 nm to 1604 nm with gain variation of less than 3 dB. The corresponding noise figure varies from 5.6 to 7.6 dB, which is 0.8 to 2.6 dB reduced compared to those of unclamped amplifier (Authors)

Ka-band to L-band frequency down-conversion based on III-V-on-silicon photonic integrated circuits

Science.gov (United States)

Van Gasse, K.; Wang, Z.; Uvin, S.; De Deckere, B.; Mariën, J.; Thomassen, L.; Roelkens, G.

2017-12-01

In this work, we present the design, simulation and characterization of a frequency down-converter based on III-V-on-silicon photonic integrated circuit technology. We first demonstrate the concept using commercial discrete components, after which we demonstrate frequency conversion using an integrated mode-locked laser and integrated modulator. In our experiments, five channels in the Ka-band (27.5-30 GHz) with 500 MHz bandwidth are down-converted to the L-band (1.5 GHz). The breadboard demonstration shows a conversion efficiency of - 20 dB and a flat response over the 500 MHz bandwidth. The simulation of a fully integrated circuit indicates that a positive conversion gain can be obtained on a millimeter-sized photonic integrated circuit.

A high-gain and high-efficiency X-band triaxial klystron amplifier with two-stage cascaded bunching cavities

Science.gov (United States)

Zhang, Wei; Ju, Jinchuan; Zhang, Jun; Zhong, Huihuang

2017-12-01

To achieve GW-level amplification output radiation at the X-band, a relativistic triaxial klystron amplifier with two-stage cascaded double-gap bunching cavities is investigated. The input cavity is optimized to obtain a high absorption rate of the external injection microwave. The cascaded bunching cavities are optimized to achieve a high depth of the fundamental harmonic current. A double-gap standing wave extractor is designed to improve the beam wave conversion efficiency. Two reflectors with high reflection coefficients both to the asymmetric mode and the TEM mode are employed to suppress the asymmetric mode competition and TEM mode microwave leakage. Particle-in-cell simulation results show that a high power microwave with a power of 2.53 GW and a frequency of 8.4 GHz is generated with a 690 kV, 9.3 kA electron beam excitation and a 25 kW seed microwave injection. Particularly, the achieved power conversion efficiency is about 40%, and the gain is as high as 50 dB. Meanwhile, there is insignificant self-excitation of the parasitic mode in the proposed structure by adopting the reflectors. The relative phase difference between the injected signals and the output microwaves keeps locked after the amplifier becomes saturated.

Two-stage, high power X-band amplifier experiment

International Nuclear Information System (INIS)

Kuang, E.; Davis, T.J.; Ivers, J.D.; Kerslick, G.S.; Nation, J.A.; Schaechter, L.

1993-01-01

At output powers in excess of 100 MW the authors have noted the development of sidebands in many TWT structures. To address this problem an experiment using a narrow bandwidth, two-stage TWT is in progress. The TWT amplifier consists of a dielectric (e = 5) slow-wave structure, a 30 dB sever section and a 8.8-9.0 GHz passband periodic, metallic structure. The electron beam used in this experiment is a 950 kV, 1 kA, 50 ns pencil beam propagating along an applied axial field of 9 kG. The dielectric first stage has a maximum gain of 30 dB measured at 8.87 GHz, with output powers of up to 50 MW in the TM 01 mode. In these experiments the dielectric amplifier output power is about 3-5 MW and the output power of the complete two-stage device is ∼160 MW at the input frequency. The sidebands detected in earlier experiments have been eliminated. The authors also report measurements of the energy spread of the electron beam resulting from the amplification process. These experimental results are compared with MAGIC code simulations and analytic work they have carried out on such devices

Valence-band discontinuities of wurtzite GaN, AlN, and InN heterojunctions measured by x-ray photoemission spectroscopy

International Nuclear Information System (INIS)

Martin, G.; Botchkarev, A.; Rockett, A.; Morkoc, H.

1996-01-01

The valence-band discontinuities at various wurtzite GaN, AlN, and InN heterojunctions were measured by means of x-ray photoemission spectroscopy. A significant forward endash backward asymmetry was observed in the InN/GaN endash GaN/InN and InN/AlN endash AlN/InN heterojunctions. The asymmetry was understood as a piezoelectric strain effect. We report the valence band discontinuities for InN/GaN=1.05±0.25 eV, GaN/AlN=0.70±0.24 eV, and InN/AlN=1.81±0.20 eV, all in the standard type I lineup. These values obey transitivity to within the experimental accuracy. Tables of photoemission core level binding energies are reported for wurtzite GaN, AlN, and InN. copyright 1996 American Institute of Physics

Low-noise wide-band amplifiers for stochastic beam cooling experiments

International Nuclear Information System (INIS)

Leskovar, B.; Lo, C.C.

1982-01-01

Noise characteristics of the continuous-wave wide-band amplifier systems for stochastic beam cooling experiments are presented. Also, the noise performance, bandwidth capability and gain stability of components used in these amplifiers are summarized and compared in the 100 MHz to 40 GHz frequency range. This includes bipolar and field-effect transistors, parametric amplifier, Schottky diode mixer and maser. Measurements of the noise characteristics and scattering parameters of variety GaAs FETs as a function of ambient temperature are also given. Performance data and design information are presented on a broadband 150-500 MHz preamplifier having noise temperature of approximately 35 0 K at ambient temperature of 20 0 K. An analysis of preamplifier stability based on scattering parameters concept is included

A Novel Low-cost, Ka-band, High Altitude, Multi-Baseline Unmanned Aerial Vehicle Sensor for Surface Water Ocean Topography, Phase II

Data.gov (United States)

National Aeronautics and Space Administration — This proposal presents the Ka-band SWOT Phenomenology Airborne Radar (KaSPAR) to support the surface water ocean topography (SWOT) mission for science and algorithm...

Miniaturized UHF, S-, and Ka-band RF MEMS Filters for Small Form Factor, High Performance EVA Radio, Phase II

Data.gov (United States)

National Aeronautics and Space Administration — In Phase II of this SBIR, Harmonic Devices (HDI) proposes to develop miniaturized MEMS filters at UHF, S-band and Ka-band to address the requirements of NASA's...

Evaluation and Performance Analysis of 3D Printing Technique for Ka-Band Antenna Production

DEFF Research Database (Denmark)

Armendariz, Unai; Rommel, Simon; Rodríguez Páez, Juan Sebastián

2016-01-01

This paper presents the design and fabrication of 3D printed WR-28 waveguide horn antennas operating in the Ka-band frequency range between 26.5GHz and 40GHz. Three antennas are fabricated from polylactide acid filaments in conductive and non-conductive variants; the latter is covered...

The study of electronic structures and optical properties of Al-doped GaN

International Nuclear Information System (INIS)

Li Enling; Hou Liping; Liu Mancang; Xi Meng; Wang Xiqiang; Dai Yuanbin; Li Lisha

2011-01-01

The electronic structures and optical properties of undoped and Al-doped GaN (Al x Ga 1-x N, x=0.0625, 0.125, 0.25) have been studied based on generalized gradient approximation (GGA) method of density functional theory (DFT). The differences of the electronic structures and optical properties of undoped and Al-doped GaN have been discussed in detail. The result shows: according to total density of state of undoped and Al-doped GaN, the conduction band becomes width and moves to high energy level with gradual increase concentration of Al impurity. Impurity energy band isn't found in energy band structures of Al x Ga 1-x N, the same as energy band structures of undoped GaN, but the band gaps gradually become wide with increase of Al impurity. Absorption spectra of undoped and Al-doped GaN of main absorption peak moves to high energy level with increase of Al impurity.

Wide-band CMOS low-noise amplifier exploiting thermal noise canceling

NARCIS (Netherlands)

Bruccoleri, F.; Klumperink, Eric A.M.; Nauta, Bram

Known elementary wide-band amplifiers suffer from a fundamental tradeoff between noise figure (NF) and source impedance matching, which limits the NF to values typically above 3 dB. Global negative feedback can be used to break this tradeoff, however, at the price of potential instability. In

Solid state Ka-band pulse oscillator with frequency electronic switching

Directory of Open Access Journals (Sweden)

Dvornichenko V. P.

2015-08-01

Full Text Available Transmitting devices for small radars in the millimeter wavelength range with high resolution on range and noise immunity. The work presents the results of research and development of compact pulse oscillators with digital frequency switching from pulse to pulse. The oscillator consists of a frequency synthesizer and a synchronized amplifier on the IMPATT diode. Reference oscillator of synthesizer is synchronized by crystal oscillator with digital PLL system and contains a frequency multiplier and an amplifier operating in pulse mode. Small-sized frequency synthesizer of 8 mm wave lengths provides an output power of ~1.2 W per pulse with a frequency stability of no worse than 2•10–6. Radiation frequency is controlled by three-digit binary code in OOL levels. Synchronized amplifier made on IMPATT diodes provides microwave power up to 20 W in oscillator output with microwave pulse duration of 100—300 ns in an operating band. The oscillator can be used as a driving source for the synchronization of semiconductor and electro-vacuum devices of pulsed mode, and also as a transmitting device for small-sized radar of millimeter wave range.

W-band Solid State Power Amplifier for Remote Sensing Radars, Phase I

Data.gov (United States)

National Aeronautics and Space Administration — High power, compact, reliable and affordable power amplifiers operating in the W-band (94 GHz region) are critical to realizing transmitters for many NASA missions...

W-Band Solid State Power Amplifier for Remote Sensing Radars, Phase II

Data.gov (United States)

National Aeronautics and Space Administration — High power, compact, reliable and affordable power amplifiers operating in the W-band (94 GHz region) are critical to realizing transmitters for many NASA missions...

Amplifier Module for 260-GHz Band Using Quartz Waveguide Transitions

Science.gov (United States)

Padmanabhan, Sharmila; Fung, King Man; Kangaslahti, Pekka P.; Peralta, Alejandro; Soria, Mary M.; Pukala, David M.; Sin, Seth; Samoska, Lorene A.; Sarkozy, Stephen; Lai, Richard

2012-01-01

Packaging of MMIC LNA (monolithic microwave integrated circuit low-noise amplifier) chips at frequencies over 200 GHz has always been problematic due to the high loss in the transition between the MMIC chip and the waveguide medium in which the chip will typically be used. In addition, above 200 GHz, wire-bond inductance between the LNA and the waveguide can severely limit the RF matching and bandwidth of the final waveguide amplifier module. This work resulted in the development of a low-loss quartz waveguide transition that includes a capacitive transmission line between the MMIC and the waveguide probe element. This capacitive transmission line tunes out the wirebond inductance (where the wire-bond is required to bond between the MMIC and the probe element). This inductance can severely limit the RF matching and bandwidth of the final waveguide amplifier module. The amplifier module consists of a quartz E-plane waveguide probe transition, a short capacitive tuning element, a short wire-bond to the MMIC, and the MMIC LNA. The output structure is similar, with a short wire-bond at the output of the MMIC, a quartz E-plane waveguide probe transition, and the output waveguide. The quartz probe element is made of 3-mil quartz, which is the thinnest commercially available material. The waveguide band used is WR4, from 170 to 260 GHz. This new transition and block design is an improvement over prior art because it provides for better RF matching, and will likely yield lower loss and better noise figure. The development of high-performance, low-noise amplifiers in the 180-to- 700-GHz range has applications for future earth science and planetary instruments with low power and volume, and astrophysics array instruments for molecular spectroscopy. This frequency band, while suitable for homeland security and commercial applications (such as millimeter-wave imaging, hidden weapons detection, crowd scanning, airport security, and communications), also has applications to

Mechanical, Thermodynamic and Electronic Properties of Wurtzite and Zinc-Blende GaN Crystals

Science.gov (United States)

Luan, Xinghe; Feng, Chuang; Yang, Daoguo; Zhang, Guoqi

2017-01-01

For the limitation of experimental methods in crystal characterization, in this study, the mechanical, thermodynamic and electronic properties of wurtzite and zinc-blende GaN crystals were investigated by first-principles calculations based on density functional theory. Firstly, bulk moduli, shear moduli, elastic moduli and Poisson’s ratios of the two GaN polycrystals were calculated using Voigt and Hill approximations, and the results show wurtzite GaN has larger shear and elastic moduli and exhibits more obvious brittleness. Moreover, both wurtzite and zinc-blende GaN monocrystals present obvious mechanical anisotropic behavior. For wurtzite GaN monocrystal, the maximum and minimum elastic moduli are located at orientations [001] and , respectively, while they are in the orientations and for zinc-blende GaN monocrystal, respectively. Compared to the elastic modulus, the shear moduli of the two GaN monocrystals have completely opposite direction dependences. However, different from elastic and shear moduli, the bulk moduli of the two monocrystals are nearly isotropic, especially for the zinc-blende GaN. Besides, in the wurtzite GaN, Poisson’s ratios at the planes containing [001] axis are anisotropic, and the maximum value is 0.31 which is located at the directions vertical to [001] axis. For zinc-blende GaN, Poisson’s ratios at planes (100) and (111) are isotropic, while the Poisson’s ratio at plane (110) exhibits dramatically anisotropic phenomenon. Additionally, the calculated Debye temperatures of wurtzite and zinc-blende GaN are 641.8 and 620.2 K, respectively. At 300 K, the calculated heat capacities of wurtzite and zinc-blende are 33.6 and 33.5 J mol−1 K−1, respectively. Finally, the band gap is located at the G point for the two crystals, and the band gaps of wurtzite and zinc-blende GaN are 3.62 eV and 3.06 eV, respectively. At the G point, the lowest energy of conduction band in the wurtzite GaN is larger, resulting in a wider band gap

Mechanical, Thermodynamic and Electronic Properties of Wurtzite and Zinc-Blende GaN Crystals

Directory of Open Access Journals (Sweden)

Hongbo Qin

2017-12-01

Full Text Available For the limitation of experimental methods in crystal characterization, in this study, the mechanical, thermodynamic and electronic properties of wurtzite and zinc-blende GaN crystals were investigated by first-principles calculations based on density functional theory. Firstly, bulk moduli, shear moduli, elastic moduli and Poisson’s ratios of the two GaN polycrystals were calculated using Voigt and Hill approximations, and the results show wurtzite GaN has larger shear and elastic moduli and exhibits more obvious brittleness. Moreover, both wurtzite and zinc-blende GaN monocrystals present obvious mechanical anisotropic behavior. For wurtzite GaN monocrystal, the maximum and minimum elastic moduli are located at orientations [001] and <111>, respectively, while they are in the orientations <111> and <100> for zinc-blende GaN monocrystal, respectively. Compared to the elastic modulus, the shear moduli of the two GaN monocrystals have completely opposite direction dependences. However, different from elastic and shear moduli, the bulk moduli of the two monocrystals are nearly isotropic, especially for the zinc-blende GaN. Besides, in the wurtzite GaN, Poisson’s ratios at the planes containing [001] axis are anisotropic, and the maximum value is 0.31 which is located at the directions vertical to [001] axis. For zinc-blende GaN, Poisson’s ratios at planes (100 and (111 are isotropic, while the Poisson’s ratio at plane (110 exhibits dramatically anisotropic phenomenon. Additionally, the calculated Debye temperatures of wurtzite and zinc-blende GaN are 641.8 and 620.2 K, respectively. At 300 K, the calculated heat capacities of wurtzite and zinc-blende are 33.6 and 33.5 J mol−1 K−1, respectively. Finally, the band gap is located at the G point for the two crystals, and the band gaps of wurtzite and zinc-blende GaN are 3.62 eV and 3.06 eV, respectively. At the G point, the lowest energy of conduction band in the wurtzite GaN is larger

Mechanical, Thermodynamic and Electronic Properties of Wurtzite and Zinc-Blende GaN Crystals.

Science.gov (United States)

Qin, Hongbo; Luan, Xinghe; Feng, Chuang; Yang, Daoguo; Zhang, Guoqi

2017-12-12

For the limitation of experimental methods in crystal characterization, in this study, the mechanical, thermodynamic and electronic properties of wurtzite and zinc-blende GaN crystals were investigated by first-principles calculations based on density functional theory. Firstly, bulk moduli, shear moduli, elastic moduli and Poisson's ratios of the two GaN polycrystals were calculated using Voigt and Hill approximations, and the results show wurtzite GaN has larger shear and elastic moduli and exhibits more obvious brittleness. Moreover, both wurtzite and zinc-blende GaN monocrystals present obvious mechanical anisotropic behavior. For wurtzite GaN monocrystal, the maximum and minimum elastic moduli are located at orientations [001] and , respectively, while they are in the orientations and for zinc-blende GaN monocrystal, respectively. Compared to the elastic modulus, the shear moduli of the two GaN monocrystals have completely opposite direction dependences. However, different from elastic and shear moduli, the bulk moduli of the two monocrystals are nearly isotropic, especially for the zinc-blende GaN. Besides, in the wurtzite GaN, Poisson's ratios at the planes containing [001] axis are anisotropic, and the maximum value is 0.31 which is located at the directions vertical to [001] axis. For zinc-blende GaN, Poisson's ratios at planes (100) and (111) are isotropic, while the Poisson's ratio at plane (110) exhibits dramatically anisotropic phenomenon. Additionally, the calculated Debye temperatures of wurtzite and zinc-blende GaN are 641.8 and 620.2 K, respectively. At 300 K, the calculated heat capacities of wurtzite and zinc-blende are 33.6 and 33.5 J mol -1 K -1 , respectively. Finally, the band gap is located at the G point for the two crystals, and the band gaps of wurtzite and zinc-blende GaN are 3.62 eV and 3.06 eV, respectively. At the G point, the lowest energy of conduction band in the wurtzite GaN is larger, resulting in a wider band gap. Densities of

Lunar Noise-Temperature Increase Measurements at S-Band, X-Band, and Ka-Band Using a 34-Meter-Diameter Beam-Waveguide Antenna

Science.gov (United States)

Morabito, D. D.

2006-08-01

The Moon radiates energy at infrared and microwave wavelengths, in addition to reflecting sunlight at optical wavelengths. As a result, an antenna pointed at or near the Moon will cause an increase in receiver noise temperature that needs to be accounted for in telemetry, radio science, or ranging link budgets. The Deep Space Network may be required to use its antennas in future lunar robotic or human missions, and thus it is important to understand the nature of this temperature increase as a function of observing frequency, lunar phase, and angular offset of the antenna beam from the center of the lunar disk. This article quantifies such a set of measurements acquired at DSS 13, a 34-m-diameter research and development beam-waveguide antenna located at Goldstone, California, at three different telecommunication frequencies, S-band (2.3 GHz), X-band (8.4 GHz), and Ka-band (32 GHz), over a wide range of lunar phase, for both disk-centered and limb-centered positions of the antenna beam.

Ka-band IQ vector modulator employing GaAs HBTs

International Nuclear Information System (INIS)

Cao Yuxiong; Wu Danyu; Chen Gaopeng; Jin Zhi; Liu Xinyu

2011-01-01

The importance of high-performance, low-cost and millimeter-wave transmitters for digital communications and radar applications is increasing. The design and performance of a Ka-band balanced in-phase and quadrature-phase (I-Q) type vector modulator, using GaAs heterojunction bipolar transistors (HBTs) as switching elements, are presented. The balanced technique is used to remove the parasitics of the HBTs to result in near perfect constellations. Measurements of the monolithic microwave integrated circuit (MMIC) chip with a size of 1.89 x 2.26 mm 2 demonstrate an amplitude error below 1.5 dB and the phase error within 3 0 between 26 and 40 GHz except for a singular point at 35.6 GHz. The results show that the technique is suitable for millimeter-wave digital communications. (semiconductor integrated circuits)

The design of a linear L-band high power amplifier for mobile communication satellites

Science.gov (United States)

Whittaker, N.; Brassard, G.; Li, E.; Goux, P.

1990-01-01

A linear L-band solid state high power amplifier designed for the space segment of the Mobile Satellite (MSAT) mobile communication system is described. The amplifier is capable of producing 35 watts of RF power with multitone signal at an efficiency of 25 percent and with intermodulation products better than 16 dB below carrier.

Band alignments and improved leakage properties of (La2O3)0.5(SiO2)0.5/SiO2/GaN stacks for high-temperature metal-oxide-semiconductor field-effect transistor applications

Science.gov (United States)

Gao, L. G.; Xu, B.; Guo, H. X.; Xia, Y. D.; Yin, J.; Liu, Z. G.

2009-06-01

The band alignments of (La2O3)0.5(SiO2)0.5(LSO)/GaN and LSO/SiO2/GaN gate dielectric stacks were investigated comparatively by using x-ray photoelectron spectroscopy. The valence band offsets for LSO/GaN stack and LSO/SiO2/GaN stack are 0.88 and 1.69 eV, respectively, while the corresponding conduction band offsets are found to be 1.40 and 1.83 eV, respectively. Measurements of the leakage current density as function of temperature revealed that the LSO/SiO2/GaN stack has much lower leakage current density than that of the LSO/GaN stack, especially at high temperature. It is concluded that the presence of a SiO2 buffer layer increases band offsets and reduces the leakage current density effectively.

Photoluminescence of Mg-doped m-plane GaN grown by MOCVD on bulk GaN substrates

OpenAIRE

Monemar, Bo; Paskov, Plamen; Pozina, Galia; Hemmingsson, Carl; Bergman, Peder; Lindgren, David; Samuelson, Lars; Ni, Xianfeng; Morkoç, Hadis; Paskova, Tanya; Bi, Zhaoxia; Ohlsson, Jonas

2011-01-01

Photoluminescence (PL) properties are reported for a set of m-plane GaN films with Mg doping varied from mid 1018cm-3 to well above 1019 cm-3. The samples were grown with MOCVD at reduced pressure on low defect density m-plane bulk GaN templates. The sharp line near bandgap bound exciton (BE) spectra observed below 50 K, as well as the broader donor-acceptor pair (DAP) PL bands at 2.9 eV to 3.3 eV give evidence of several Mg related acceptors, similar to the case of c-plane GaN. The dependenc...

X-band 5-bit MMIC phase shifter with GaN HEMT technology

Science.gov (United States)

Sun, Pengpeng; Liu, Hui; Zhang, Zongjing; Geng, Miao; Zhang, Rong; Luo, Weijun

2017-10-01

The design approach and performance of a 5-bit digital phase shifter implemented with 0.25 μm GaN HEMT technology for X-band phased arrays are described. The switched filter and high-pass/low-pass networks are proposed in this article. For all 32 states of the 5-bit phase shifter, the RMS phase error less than 5.5°, RMS amplitude error less than 0.8 dB, insertion loss less than 12 dB and input/output return loss less than 8.5 dB are obtained overall 8-12 GHz. The continuous wave power capability is also measured, and a typical input RF P1dB data of 32 dBm is achieved at 8 GHz.

Taevo Gans : särama pandud postmodernism / Kadi Viljak

Index Scriptorium Estoniae

Viljak, Kadi

2004-01-01

Viking Window ASi büroo ja ekspositsioonisaal 1979. a. Jüri Okase projekteeritud endises Paide KEKi remontmehaanikatöökoja hoones Mäos. Sisearhitekt Taevo Gans, kelle projekteeritud on ka ettevõtte juhi töölaud. T. Gansi kommentaarid. Ill.: 6 värv. sisevaadet

Advanced mobile satellite communications system using Ka and MM-wave bands in Japan's R and D satellite project

Science.gov (United States)

Isobe, Shunkichi; Ohmori, Shingo; Hamamoto, Naokazu; Yamamoto, Minoru

1991-01-01

Communications Research Laboratory (CRL) studied an advanced mobile satellite communications system using Ka and millimeter-wave bands in the R&D Satellite project. The project started in 1990 and the satellite will be launched in 1997. On-board multi-beam interconnecting is one of basic functions to realize one-hop connection among Very Small Aperture Terminals (VSATs), mobile, and hand-held terminals in future mobile satellite communications system. An Intermediate Frequency (IF) filter bank and regenerative transponder are suitable for this function. The transponder configuration of an advanced mobile communications mission of the R&D Satellite for experiment is shown. High power transmitters of Ka and millimeter-wave bands, a 3x3 IF filter band and Single Channel Per Carrier/Time Division Multiplexing (SCPC/TDM) regenerative MODEMS, which will be boarded on the R&D Satellite, are being developed for the purpose of studying the feasibility of advanced mobile communications system.

Synthesis and cathodoluminescence of Sb/P co-doped GaN nanowires

International Nuclear Information System (INIS)

Wang, Zaien; Liu, Baodan; Yuan, Fang; Hu, Tao; Zhang, Guifeng; Dierre, Benjamin; Hirosaki, Naoto; Sekiguchi, Takashi; Jiang, Xin

2014-01-01

Sb/P co-doped Gallium Nitride (GaN) nanowires were synthesized via a simple chemical vapor deposition (CVD) process by heating Ga 2 O 3 and Sb powders in NH 3 atmosphere. Scanning electron microscope (SEM), X-ray diffraction (XRD), transmission electron microscope (TEM) and energy dispersive X-ray spectroscopy (EDS) measurements confirmed the as-synthesized products were Sb/P co-doped GaN nanowires with rough morphology and hexagonal wurtzite structure. Room temperature cathodoluminescence (CL) demonstrated that an obvious band shift of GaN nanowires can be observed due to Sb/P co-doping. Possible explanation for the growth and luminescence mechanism of Sb/P co-doped GaN nanowires was discussed. Highlight: • Sb/P co-doped GaN nanowires were synthesized through a well-designed multi-channel chemical vapor deposition (CVD) process. • Sb/P co-doping leads to the crystallinity deterioration of GaN nanowires. • Sb/P co-doping caused the red-shift of GaN nanowires band-gap in UV range. • Compared with Sb doping, P atoms are more easy to incorporate into the GaN lattice

Mode control in a high gain relativistic klystron amplifier with 3 GW output power

Science.gov (United States)

Wu, Yang; Xie, Hong-Quan; Xu, Zhou

2014-01-01

Higher mode excitation is very serious in the relativistic klystron amplifier, especially for the high gain relativistic amplifier working at tens of kilo-amperes. The mechanism of higher mode excitation is explored in the PIC simulation and it is shown that insufficient separation of adjacent cavities is the main cause of higher mode excitation. So RF lossy material mounted on the drift tube wall is adopted to suppress higher mode excitation. A high gain S-band relativistic klystron amplifier is designed for the beam current of 13 kA and the voltage of 1 MV. PIC simulation shows that the output power is 3.2 GW when the input power is only 2.8 kW.

Computational study of GaAs1-xNx and GaN1-yAsy alloys and arsenic impurities in GaN

International Nuclear Information System (INIS)

Laaksonen, K; Komsa, H-P; Arola, E; Rantala, T T; Nieminen, R M

2006-01-01

We have studied the structural and electronic properties of As-rich GaAs 1-x N x and N-rich GaN 1-y As y alloys in a large composition range using first-principles methods. We have systematically investigated the effect of the impurity atom configuration near both GaAs and GaN sides of the concentration range on the total energies, lattice constants and bandgaps. The N (As) atoms, replacing substitutionally As (N) atoms in GaAs (GaN), cause the surrounding Ga atoms to relax inwards (outwards), making the Ga-N (Ga-As) bond length about 15% shorter (longer) than the corresponding Ga-As (Ga-N) bond length in GaAs (GaN). The total energies of the relaxed alloy supercells and the bandgaps experience large fluctuations within different configurations and these fluctuations grow stronger if the impurity concentration is increased. Substituting As atoms with N in GaAs induces modifications near the conduction band minimum, while substituting N atoms with As in GaN modifies the states near the valence band maximum. Both lead to bandgap reduction, which is at first rapid but later slows down. The relative size of the fluctuations is much larger in the case of GaAs 1-x N x alloys. We have also looked into the question of which substitutional site (Ga or N) As occupies in GaN. We find that under Ga-rich conditions arsenic prefers the substitutional N site over the Ga site within a large range of Fermi level values

Impact of Surface Soil Moisture Variations on Radar Altimetry Echoes at Ku and Ka Bands in Semi-Arid Areas

Directory of Open Access Journals (Sweden)

Christophe Fatras

2018-04-01

Full Text Available Radar altimetry provides information on the topography of the Earth surface. It is commonly used for the monitoring not only sea surface height but also ice sheets topography and inland water levels. The radar altimetry backscattering coefficient, which depends on surface roughness and water content, can be related to surface properties such as surface soil moisture content. In this study, the influence of surface soil moisture on the radar altimetry echo and backscattering coefficient is analyzed over semi-arid areas. A semi-empirical model of the soil’s complex dielectric permittivity that takes into account that small-scale roughness and large-scale topography was developed to simulate the radar echoes. It was validated using waveforms acquired at Ku and Ka-bands by ENVISAT RA-2 and SARAL AltiKa respectively over several sites in Mali. Correlation coefficients ranging from 0.66 to 0.94 at Ku-band and from 0.27 to 0.96 at Ka-band were found. The increase in surface soil moisture from 0.02 to 0.4 (i.e., the typical range of variations in semi-arid areas increase the backscattering from 10 to 15 dB between the core of the dry and the maximum of the rainy seasons.

Effect of High-Temperature Annealing on Yellow and Blue Luminescence of Undoped GaN

International Nuclear Information System (INIS)

Chai Xu-Zhao; Zhou Dong; Liu Bin; Xie Zi-Li; Han Ping; Xiu Xiang-Qian; Chen Peng; Lu Hai; Zhang Rong; Zheng You-Dou

2015-01-01

The effect of high-temperature annealing on the yellow and blue luminescence of the undoped GaN is investigated by photoluminescence (PL) and x-ray photoelectron spectroscopy (XPS). It is found that the band-edge emission in the GaN apparently increases, and the yellow luminescence (YL) and blue luminescence (BL) bands dramatically decrease after annealing at 700°C. At the annealing temperature higher than 900°C, the YL and BL intensities show an enhancement for the nitrogen annealed GaN. This fact should be attributed to the increment of the Ga and N vacancies in the GaN decomposition. However, the integrated PL intensity of the oxygen annealed GaN decreases at the temperature ranging from 900°C to 1000°C. This results from the capture of many photo-generated holes by high-density surface states. XPS characterization confirms that the high-density surface states mainly originate from the incorporation of oxygen atoms into GaN at the high annealing temperature, and even induces the 0.34eV increment of the upward band bending for the oxygen annealed GaN at 1000°C. (paper)

The electronic properties of phosphorus-doped GaN nanowires from first-principle calculations

International Nuclear Information System (INIS)

Fu, Nannan; Li, Enling; Cui, Zhen; Ma, Deming; Wang, Wei; Zhang, Yulong; Song, Sha; Lin, Jie

2014-01-01

Highlights: • The P impurities tend to enrich at the surface of GaN nanowires. • The lattice parameters of GaN nanowires are changed by the P impurity. • Donor impurity level appears when the P impurity substitutes for the Ga atom. • The band gap decreases slightly when the P impurity substitutes for the N atom. - Abstract: The electronic properties of phosphorus-doped unsaturated and saturated gallium nitride (GaN) nanowires have been investigated from first-principles using the ultrasoft pseudopotential method. The results of these calculations indicate that the P impurities are enriched at the surface of gallium nitride nanowires, and that the structural symmetry of GaN nanowires is broken due to changes in the lattice parameters. When the P impurity substitutes for the Ga atom, the width of band gap increases at the Γ point, a donor impurity level appears in the band gap, and the P impurity and adjacent N atoms exists covalent interaction. Moreover, when the P impurity substitutes for the N atom, the width of the band gap decreases slightly at the Γ point, there is no obvious impurity level in the band gap, and P–Ga covalent bonds are formed, including those composed of ionic bonds. These conclusions indicate that the incorporation of P impurities can improve the field emission performance of GaN nanowires, which is consistent with the experimental results

The electronic properties of phosphorus-doped GaN nanowires from first-principle calculations

Energy Technology Data Exchange (ETDEWEB)

Fu, Nannan; Li, Enling, E-mail: Lienling@xaut.edu.cn; Cui, Zhen; Ma, Deming; Wang, Wei; Zhang, Yulong; Song, Sha; Lin, Jie

2014-05-01

Highlights: • The P impurities tend to enrich at the surface of GaN nanowires. • The lattice parameters of GaN nanowires are changed by the P impurity. • Donor impurity level appears when the P impurity substitutes for the Ga atom. • The band gap decreases slightly when the P impurity substitutes for the N atom. - Abstract: The electronic properties of phosphorus-doped unsaturated and saturated gallium nitride (GaN) nanowires have been investigated from first-principles using the ultrasoft pseudopotential method. The results of these calculations indicate that the P impurities are enriched at the surface of gallium nitride nanowires, and that the structural symmetry of GaN nanowires is broken due to changes in the lattice parameters. When the P impurity substitutes for the Ga atom, the width of band gap increases at the Γ point, a donor impurity level appears in the band gap, and the P impurity and adjacent N atoms exists covalent interaction. Moreover, when the P impurity substitutes for the N atom, the width of the band gap decreases slightly at the Γ point, there is no obvious impurity level in the band gap, and P–Ga covalent bonds are formed, including those composed of ionic bonds. These conclusions indicate that the incorporation of P impurities can improve the field emission performance of GaN nanowires, which is consistent with the experimental results.

Photoluminescence and photoluminescence excitation studies in 80 MeV Ni ion irradiated MOCVD grown GaN

Energy Technology Data Exchange (ETDEWEB)

Devaraju, G. [School of Physics, University of Hyderabad, Central University P.O., Hyderabad 500 046 (India); Pathak, A.P., E-mail: appsp@uohyd.ernet.in [School of Physics, University of Hyderabad, Central University P.O., Hyderabad 500 046 (India); Srinivasa Rao, N.; Saikiran, V. [School of Physics, University of Hyderabad, Central University P.O., Hyderabad 500 046 (India); Enrichi, Francesco [Coordinamento Interuniversitario Veneto per le Nanotecnologie (CIVEN), via delle Industrie 5, Marghera, I-30175Venice (Italy); Trave, Enrico [Dipartimento di Chimica Fisica, Universita Ca' Foscari Venezia, Dorsoduro 2137, I-30123 Venice (Italy)

2011-09-01

Highlights: {yields} MOCVD grown GaN samples are irradiated with 80 MeV Ni ions at room temperature. {yields} PL and PLE studies have been carried out for band to band, BL and YL emissions. {yields} Ni ions irradiated GaN shows BL band at 450 nm besides YL band. {yields} Radiation annealed Ga vacancies have quenching effect on YL intensity. {yields} We speculated that BL and YL are associated with N and Ga vacancies, respectively. - Abstract: We report damage creation and annihilation under energetic ion bombardment at a fixed fluence. MOCVD grown GaN thin films were irradiated with 80 MeV Ni ions at a fluence of 1 x 10{sup 13} ions/cm{sup 2}. Irradiated GaN thin films were subjected to rapid thermal annealing for 60 s in nitrogen atmosphere to anneal out the defects. The effects of defects on luminescence were explored with photoluminescence measurements. Room temperature photoluminescence spectra from pristine sample revealed presence of band to band transition besides unwanted yellow luminescence. Irradiated GaN does not show any band to band transition but there is a strong peak at 450 nm which is attributed to ion induced defect blue luminescence. However, irradiated and subsequently annealed samples show improved band to band transitions and a significant decrease in yellow luminescence intensity due to annihilation of defects which were created during irradiation. Irradiation induced effects on yellow and blue emissions are discussed.

Thermal Modeling of GaN HEMTs on Sapphire and Diamond

National Research Council Canada - National Science Library

Salm, III, Roman P

2005-01-01

Wide bandgap semiconductors have entered into Naval radar use and will eventually replace vacuum tube and conventional solid-state amplifiers for all modern military radar and communications applications. Gallium Nitride (GaN...

Installing the earth station of Ka-band satellite frequency in Malaysia: conceptual framework for site decision

Science.gov (United States)

Mahmud, M. R.; Reba, M. N. M.; Jaw, S. W.; Arsyad, A.; Ibrahim, M. A. M.

2017-05-01

This paper developed a conceptual framework in determining the suitable location in installing the earth station for Ka-band satellite communication in Malaysia. This current evolution of high throughput satellites experienced major challenge due to Malaysian climate. Because Ka-band frequency is highly attenuated by the rainfall; it is an enormous challenge to define the most appropriate site for the static communication. Site diversity, a measure to anticipate this conflict by choosing less attenuated region and geographically change the transmission strategy on season basis require accurate spatio-temporal information on the geographical, environmental and hydro-climatology at local scale. Prior to that request, this study developed a conceptual framework to cater the needs. By using the digital spatial data, acquired from site measurement and remote sensing, the proposed framework applied a multiple criteria analysis to perform the tasks of site selection. With the advancement of high resolution remotely sensed data, site determination can be conducted as in Malaysia; accommodating a new, fast, and effective satellite communication. The output of this study is one of the pioneer contributions to create a high tech-society.

Wide-band CMOS low-noise amplifier exploiting thermal noise canceling

OpenAIRE

Bruccoleri, F.; Klumperink, Eric A.M.; Nauta, Bram

2004-01-01

Known elementary wide-band amplifiers suffer from a fundamental tradeoff between noise figure (NF) and source impedance matching, which limits the NF to values typically above 3 dB. Global negative feedback can be used to break this tradeoff, however, at the price of potential instability. In contrast, this paper presents a feedforward noise-canceling technique, which allows for simultaneous noise and impedance matching, while canceling the noise and distortion contributions of the matching d...

Electronic structures and optical properties of GaN nanotubes with MgGa–ON co-doping

International Nuclear Information System (INIS)

Yang, Mao; Shi, Jun-jie; Zhang, Min; Zhang, Shuai; Bao, Zhi-qiang; Luo, Shao-jun; Zhou, Tie-Cheng; Zhu, Tian-cong; Li, Xiang; Li, Jia

2013-01-01

Both the electronic structures and the optical properties of single-walled zigzag GaN nanotubes (NTs) with Mg Ga –O N co-doping are investigated using first-principles calculations. We find that the Mg Ga –O N defect complex can exist stably in GaN NTs. The direct band gap width of the GaN NTs can be reduced by means of the Mg Ga –O N co-doping. The electrons of the valence band maximum (VBM) state are localized around the N atoms bonded with the Mg atom. The imaginary part ε 2 of the complex dielectric function of GaN NTs with Mg Ga –O N co-doping has a sharp peak closely related to the optical transitions between the VBM and conduction band minimum states. - Highlights: ► The Mg Ga –O N defect complex can exist stably in GaN NTs. ► The band gap of the GaN NTs can be reduced due to the Mg Ga –O N co-doping. ► The VBM states are localized around the N atoms bonded with the Mg atom. ► The ε 2 -plot has a peak related to the optical transition from the VBM to CBM state

Optical excitation of Er centers in GaN epilayers grown by MOCVD

Science.gov (United States)

George, D. K.; Hawkins, M. D.; Jiang, H. X.; Lin, J. Y.; Zavada, J. M.; Vinh, N. Q.

2016-02-01

In this paper we present results of photoluminescence (PL), photoluminescence excitation (PLE), and time resolved PL spectroscopy of the 4I13/2 → 4I15/2 transition in Er optical centers in GaN epilayers grown by metal-organic chemical vapor deposition. Under resonance excitation via the higher-lying inner 4f shell transitions and band-to-band excitation of the semiconductor host, the PL and PLE spectra reveal an existence of two types of Er optical centers from isolated and the defect-related Er centers in GaN epilayers. These centers have different PL spectra, local defect environments, decay dynamics, and excitation cross-sections. The isolated Er optical center, which can be excited by either excitation mechanism, has the same decay dynamics, but possesses a much higher cross-section under band-to-band excitation. In contrast, the defect-related Er center can only be observed through band-to-band excitation but has the largest crosssection. Our results indicate pathways for efficient optical excitation of Er-doped GaN semiconductors.

Emission dynamics of hybrid plasmonic gold/organic GaN nanorods

Science.gov (United States)

Mohammadi, F.; Schmitzer, H.; Kunert, G.; Hommel, D.; Ge, J.; Duscher, G.; Langbein, W.; Wagner, H. P.

2017-12-01

We studied the emission of bare and aluminum quinoline (Alq3)/gold coated wurtzite GaN nanorods by temperature- and intensity-dependent time-integrated and time-resolved photoluminescence (PL). The GaN nanorods of ˜1.5 μm length and ˜250 nm diameter were grown by plasma-assisted molecular beam epitaxy. Gold/Alq3 coated GaN nanorods were synthesized by organic molecular beam deposition. The near band-edge and donor-acceptor pair luminescence was investigated in bare GaN nanorods and compared with multilevel model calculations providing the dynamical parameters for electron-hole pairs, excitons, impurity bound excitons, donors and acceptors. Subsequently, the influence of a 10 nm gold coating without and with an Alq3 spacer layer was studied and the experimental results were analyzed with the multilevel model. Without a spacer layer, a significant PL quenching and lifetime reduction of the near band-edge emission is found. The behavior is attributed to surface band-bending and Förster energy transfer from excitons to surface plasmons in the gold layer. Inserting a 5 nm Alq3 spacer layer reduces the PL quenching and lifetime reduction which is consistent with a reduced band-bending and Förster energy transfer. Increasing the spacer layer to 30 nm results in lifetimes which are similar to uncoated structures, showing a significantly decreased influence of the gold coating on the excitonic dynamics.

A high efficiency Ku-band radial line relativistic klystron amplifier

Energy Technology Data Exchange (ETDEWEB)

Dang, Fangchao; Zhang, Xiaoping, E-mail: zhangxiaoping@nudt.edu.cn; Zhong, Huihuang; Zhang, Jun; Ju, Jinchuan [College of Optoelectronic Science and Engineering, National University of Defense Technology, Changsha 410073 (China)

2016-07-15

To achieve the gigawatt-level microwave amplification output at Ku-band, a radial-line relativistic klystron amplifier is proposed and investigated in this paper. Different from the annular electron beam in conventional axial relativistic klystron amplifiers, a radial-radiated electron beam is employed in this proposed klystron. Owing to its radially spreading speciality, the electron density and space charge effect are markedly weakened during the propagation in the radial line drift tube. Additionally, the power capacity, especially in the output cavity, is enhanced significantly because of its large volume, which is profitable for the long pulse operation. Particle-in-cell simulation results demonstrate that a high power microwave with the power of 3 GW and the frequency of 14.25 GHz is generated with a 500 kV, 12 kA electron beam excitation and the 30 kW radio-frequency signal injection. The power conversion efficiency is 50%, and the gain is about 50 dB. Meanwhile, there is insignificant electron beam self-excitation in the proposed structure by the adoption of two transverse electromagnetic reflectors. The relative phase difference between the injected signals and output microwaves keeps stable after the amplifier saturates.

S-band 300 W pulsed solid state microwave amplifier development for driving high power klystrons for electron accelerators

International Nuclear Information System (INIS)

Mohania, Praveen; Shrivastava, Purushottam; Hannurkar, P.R.

2005-01-01

S-Band Microwave electron accelerators like microtrons and linear accelerators need pulsed microwaves from few megawatts to tens of megawatts to accelerator the electrons to desired energy and intensity. Klystron tube based driver amplifiers were used to drive the high power klystrons, which need microwave power from few tens of watts to 1 kW depending on tube output power and gain. A endeavour was initiated at Centre for Advanced Technology to develop state of art solid state S-band microwave amplifiers indigenously to drive the klystron tubes. A modular design approach was used and individual modules up to 160 W power levels were developed and tested. Finally combining 160 W modules will give up to 300 W output power. Several more modules can be combined to achieve even high power levels. Present paper describes the developmental efforts of 300 W S-band solid-state amplifiers and related microwave technologies. (author)

Fabrication and Characterization of Mg-Doped GaN Nanowires

International Nuclear Information System (INIS)

Dong-Dong, Zhang; Cheng-Shan, Xue; Hui-Zhao, Zhuang; Ying-Long, Huang; Zou-Ping, Wang; Ying, Wang; Yong-Fu, Guo

2008-01-01

Mg-doped GaN nanowires have been synthesized by ammoniating Ga 2 O 3 films doped with Mg under flowing ammonia atmosphere at 850° C. The Mg-doped GaN nanowires are characterized by x-ray diffraction (XRD), scanning electron microscope (SEM), high-resolution transmission electron microscopy (HRTEM) and photo-luminescence (PL). The results demonstrate that the nanowires are single crystalline with hexagonal wurzite structure. The diameters of the nanowires are 20–30 nm and the lengths are 50–100 μm. The GaN nanowires show three emission bands with well-defined PL peak at 3.45 eV, 3.26 eV, 2.95 eV, respectively. The large distinct blueshift of the bandgap emission can be attributed to the Burstein–Moss effect. The peak at 3.26 eV represents the transition from the conduction-band edge to the acceptor level AM (acceptor Mg). The growth mechanism of crystalline GaN nanowires is discussed briefly. (cross-disciplinary physics and related areas of science and technology)

Rain Fade Compensation for Ka-Band Communications Satellites

Science.gov (United States)

Mitchell, W. Carl; Nguyen, Lan; Dissanayake, Asoka; Markey, Brian; Le, Anh

1997-01-01

This report provides a review and evaluation of rain fade measurement and compensation techniques for Ka-band satellite systems. This report includes a description of and cost estimates for performing three rain fade measurement and compensation experiments. The first experiment deals with rain fade measurement techniques while the second one covers the rain fade compensation techniques. The third experiment addresses a feedback flow control technique for the ABR service (for ATM-based traffic). The following conclusions were observed in this report; a sufficient system signal margin should be allocated for all carriers in a network, that is a fixed clear-sky margin should be typically in the range of 4-5 dB and should be more like 15 dB in the up link for moderate and heavy rain zones; to obtain a higher system margin it is desirable to combine the uplink power control technique with the technique that implements the source information rate and FEC code rate changes resulting in a 4-5 dB increase in the dynamic part of the system margin. The experiments would assess the feasibility of the fade measurements and compensation techniques, and ABR feedback control technique.

Rare earth point defects in GaN

Energy Technology Data Exchange (ETDEWEB)

Sanna, S.

2007-12-14

In this work we investigate rare earth doped GaN, by means of theoretical simulations. The huge unit cells necessary to model the experimental system, where dilute amount of rare earth ions are used, are handled with the charge self consistent density-functional based-tight binding (SCC-DFTB) calculational scheme. The method has been extended to include LDA+U and simplified self interaction corrected (SIC)-like potentials for the simulation of systems with localised and strongly correlated electrons. A set of tight-binding parameters has been created to model the interaction of GaN with some dopants, including a selection of lanthanide ions interesting due to their optical or magnetic properties (Pr, Eu, Gd, Er and Tm). The f-electrons were treated as valence electrons. A qualitatively correct description of the band gap is crucial for the simulation of rare earth doped GaN, because the luminescence intensity of the implanted samples depends on the size of the host band gap and because the rare earths could introduce charge transition levels near the conduction band. In this work these levels are calculated with the Slater-Janak (SJ) transition state model, which allows an approximate calculation of the charge transition levels by analysing the Kohn-Sham eigenvalues of the DFT. (orig.)

Studies on electronic structure of GaN(0001) surface

CERN Document Server

Xie Chang Kun; Xu Fa Qiang; Deng Rui; Liu Feng; Yibulaxin, K

2002-01-01

An electronic structure investigation on GaN(0001) is reported. The authors employ a full-potential linearized augmented plane-wave (FPLAPW) approach to calculate the partial density of state, which is in agreement with previous experimental results. The effects of the Ga3d semi-core levels on the electronic structure of GaN are discussed. The valence-electronic structure of the wurtzite GaN(0001) surface is investigated using synchrotron radiation excited angle-resolved photoemission spectroscopy. The bulk bands dispersion along GAMMA A direction in the Brillouin zones is measured using normal-emission spectra by changing photon-energy. The band structure derived from authors' experimental data is compared well with the results of authors' FPLAPW calculation. Furthermore, off-normal emission spectra are also measured along the GAMMA K and GAMMA M directions. Two surface states are identified, and their dispersions are characterized

Undoped p-type GaN1-xSbx alloys: Effects of annealing

Science.gov (United States)

Segercrantz, N.; Baumgartner, Y.; Ting, M.; Yu, K. M.; Mao, S. S.; Sarney, W. L.; Svensson, S. P.; Walukiewicz, W.

2016-12-01

We report p-type behavior for undoped GaN1-xSbx alloys with x ≥ 0.06 grown by molecular beam epitaxy at low temperatures (≤400 °C). Rapid thermal annealing of the GaN1-xSbx films at temperatures >400 °C is shown to generate hole concentrations greater than 1019 cm-3, an order of magnitude higher than typical p-type GaN achieved by Mg doping. The p-type conductivity is attributed to a large upward shift of the valence band edge resulting from the band anticrossing interaction between localized Sb levels and extended states of the host matrix.

Suitability of GaN and LDMOS for 70–82% efficiency 120–200W HPA addressing spaceborne P-band radar applications

DEFF Research Database (Denmark)

Le Gallou, N.; Vidkjær, Jens; Poivey, C.

2012-01-01

This paper addresses the development of P-band (435 MHz) HPA based on different technologies (GaN HEMT, LDMOS FET) for future use in pace radar applications in the context of the Biomass project. In particular best in class PAE of 70%–82% is targeted and achieved for power levels of 120W. In order...

Analysis of Standards Efficiency in Digital Television Via Satellite at Ku and Ka Bands

Directory of Open Access Journals (Sweden)

Landeros-Ayala Salvador

2013-06-01

Full Text Available In this paper, an analysis on the main technical features of digital television standards for satellite transmission is carried out. Based on simulations and link budgets, the standard with the best operational performance is defined, based on simulations and link budget analysis, as well as a comparative efficiency analysis is conducted for the Ku and Ka bands for both transparent and regenerative transponders in terms of power, bandwidth, information rate and link margin, including clear sky, uplink rain, downlink rain and rain in both.

Advanced mobile satellite communications using COMETS satellite in MM-wave and Ka-band

Science.gov (United States)

Ohmori, Shingo; Isobe, Shunkichi; Takeuchi, Makoto; Naito, Hideyuki

1993-01-01

Early in the 21st century, the demand for personal communications using mobile, hand-held, and VSAT terminals will rapidly increase. In a future system, many different types of services should be provided with one-hop connection. The Communications Research Laboratory (CRL) has studied a future advanced mobile satellite communications system using millimeter wave and Ka band. In 1990, CRL started the Communications and Broadcasting Engineering Test Satellite (COMETS) project. The satellite has been developed in conjunction with NASDA and will be launched in 1997. This paper describes the COMETS payload configuration and the experimental system for the advanced mobile communications mission.

High temperature refractive indices of GaN

Energy Technology Data Exchange (ETDEWEB)

Liu, C.; Stepanov, S.; Gott, A.; Shields, P.A.; Zhirnov, E.; Wang, W.N. [Department of Physics, University of Bath, Bath, BA2 7AY (United Kingdom); Steimetz, E.; Zettler, J.T. [LayTec, Helmholtzstr. 13-14, 10587 Berlin (Germany)

2006-06-15

Undoped GaN (u-GaN) films were grown by low pressure metalorganic vapour phase epitaxy (LP-MOVPE) on sapphire substrates. In situ optical monitoring was applied to the growth process either using a LayTec EpiR-DA TT spectroscopic reflectometer or Filmetrics F30. Refractive indices of u-GaN films at 1060 C were obtained in a spectral range from 370-900 nm. A peak at 412{+-}5 nm in refractive index spectra was observed, which most likely corresponds to the band-gap of hexagonal GaN at a temperature of 1060 C. Refractive indices below this band-gap are fitted well to the first-order Sellmeier formula. As an example of the applications of the refractive indices, the effective film thicknesses of GaN during the resumption from 3 dimensional (3D) to 2 dimensional (2D) growth have been calculated from the spectra recorded by a LayTec system using the optical constants obtained. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Effect of annealing on metastable shallow acceptors in Mg-doped GaN layers grown on GaN substrates

OpenAIRE

Pozina, Galia; Hemmingsson, Carl; Paskov, Plamen P.; Bergman, Peder; Monemar, Bo; Kawashima, T.; Amano, H.; Akasaki, I.; Usui, A.

2008-01-01

Mg-doped GaN layers grown by metal-organic vapor phase epitaxy on GaN substrates produced by the halide vapor phase technique demonstrate metastability of the near-band-gap photoluminescence (PL). The acceptor bound exciton (ABE) line possibly related to the C acceptor vanishes in as-grown samples within a few minutes under UV laser illumination. Annealing activates the more stable Mg acceptors and passivates C acceptors. Consequently, only the ABE line related to Mg is dominant in PL spectra...

Strain-mediated electronic properties of pristine and Mn-doped GaN monolayers

Science.gov (United States)

Sharma, Venus; Srivastava, Sunita

2018-04-01

Graphene-like two-dimensional (2D) monolayer structures GaN has gained enormous amount of interest due to high thermal stability and inherent energy band gap for practical applications. First principles calculations are performed to investigate the electronic structure and strain-mediated electronic properties of pristine and Mn-doped GaN monolayer. Binding energy of Mn dopant at various adsorption site is found to be nearly same indicating these sites to be equally favorable for adsorption of foreign atom. Depending on the adsorption site, GaN monolayer can act as p-type or n-type magnetic semiconductor. The tensile strength of both pristine and doped GaN monolayer (∼24 GPa) at ultimate tensile strain of 34% is comparable with the tensile strength of graphene. The in-plane biaxial strain modulate the energy band gap of both pristine and doped-monolayer from direct to indirect gap semiconductor and finally retendered theme into metal at critical value of applied strain. These characteristics make GaN monolayer to be potential candidate for the future applications in tunable optoelectronics.

Proposal for a Joint NASA/KSAT Ka-band RF Propagation Terminal at Svalbard, Norway

Science.gov (United States)

Volosin, Jeffrey; Acosta, Roberto; Nessel, James; McCarthy, Kevin; Caroglanian, Armen

2010-01-01

This slide presentation discusses the placement of a Ka-band RF Propagation Terminal at Svalbard, Norway. The Near Earth Network (NEN) station would be managed by Kongsberg Satellite Services (KSAT) and would benefit NASA and KSAT. There are details of the proposed NASA/KSAT campaign, and the responsibilities each would agree to. There are several reasons for the placement, a primary reason is comparison with the Alaska site, Based on climatological similarities/differences with Alaska, Svalbard site expected to have good radiometer/beacon agreement approximately 99% of time.

Photoluminescence of Mg-doped m-plane GaN grown by MOCVD on bulk GaN substrates

Energy Technology Data Exchange (ETDEWEB)

Monemar, Bo [Department of Physics, Chemistry and Biology, Linkoeping University, 581 83 Linkoeping (Sweden); Solid State Physics-The Nanometer Structure Consortium, Lund University, Box 118, 221 00 Lund (Sweden); Paskov, Plamen; Pozina, Galia; Hemmingsson, Carl; Bergman, Peder [Department of Physics, Chemistry and Biology, Linkoeping University, 581 83 Linkoeping (Sweden); Lindgren, David; Samuelson, Lars [Solid State Physics-The Nanometer Structure Consortium, Lund University, Box 118, 221 00 Lund (Sweden); Ni, Xianfeng; Morkoc, Hadis [Department of Electrical and Computer Engineering, Virginia Commonwealth University, Richmond, Virginia 23284-3072 (United States); Paskova, Tanya [Kyma Technologies Inc., Raleigh, North Carolina 27617 (United States); Bi, Zhaoxia; Ohlsson, Jonas [Glo AB, Ideon Science Park, Scheelevaegen 17, 223 70 Lund (Sweden)

2011-07-15

Photoluminescence (PL) properties are reported for a set of m-plane GaN films with Mg doping varied from mid 10{sup 18} cm{sup -3} to above 10{sup 20} cm{sup -3}. The samples were grown with MOCVD at reduced pressure on low defect density bulk GaN templates. The sharp line near bandgap bound exciton (BE) spectra observed below 50 K, as well as the broader donor-acceptor pair (DAP) PL bands at 2.9-3.3 eV give evidence of several Mg related acceptors, similar to the case of c-plane GaN. The dependence of the BE spectra on excitation intensity as well as the transient decay behaviour demonstrate acoustic phonon assisted transfer between the acceptor BE states. The lower energy donor-acceptor pair spectra suggest the presence of deep acceptors, in addition to the two main shallower ones at about 0.23 eV. Similar spectra from Mg-doped GaN nanowires (NWs) grown by MOCVD are also briefly discussed. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Surface chemistry and electronic structure of nonpolar and polar GaN films

Energy Technology Data Exchange (ETDEWEB)

Mishra, Monu; Krishna, T.C. Shibin; Aggarwal, Neha; Gupta, Govind, E-mail: govind@nplindia.org

2015-08-01

Highlights: • Surface chemistry and electronic structure of polar and nonpolar GaN is reported. • Influence of polarization on electron affinity of p & np GaN films is investigated. • Correlation between surface morphology and polarity has been deduced. - Abstract: Photoemission and microscopic analysis of nonpolar (a-GaN/r-Sapphire) and polar (c-GaN/c-Sapphire) epitaxial gallium nitride (GaN) films grown via RF-Molecular Beam Epitaxy is reported. The effect of polarization on surface properties like surface states, electronic structure, chemical bonding and morphology has been investigated and correlated. It was observed that polarization lead to shifts in core level (CL) as well as valence band (VB) spectra. Angle dependent X-ray Photoelectron Spectroscopic analysis revealed higher surface oxide in polar GaN film compared to nonpolar GaN film. On varying the take off angle (TOA) from 0° to 60°, the Ga−O/Ga−N ratio varied from 0.11–0.23 for nonpolar and 0.17–0.36 for polar GaN film. The nonpolar film exhibited N-face polarity while Ga-face polarity was perceived in polar GaN film due to the inherent polarization effect. Polarization charge compensated surface states were observed on the polar GaN film and resulted in downward band bending. Ultraviolet photoelectron spectroscopic measurements revealed electron affinity and ionization energy of 3.4 ± 0.1 eV and 6.8 ± 0.1 eV for nonpolar GaN film and 3.8 ± 0.1 eV and 7.2 ± 0.1 eV for polar GaN film respectively. Field Emission Scanning Electron Microscopy measurements divulged smooth morphology with pits on polar GaN film. The nonpolar film on the other hand showed pyramidal structures having facets all over the surface.

Design and simulation of GaN based Schottky betavoltaic nuclear micro-battery

International Nuclear Information System (INIS)

San, Haisheng; Yao, Shulin; Wang, Xiang; Cheng, Zaijun; Chen, Xuyuan

2013-01-01

The current paper presents a theoretical analysis of Ni-63 nuclear micro-battery based on a wide-band gap semiconductor GaN thin-film covered with thin Ni/Au films to form Schottky barrier for carrier separation. The total energy deposition in GaN was calculated using Monte Carlo methods by taking into account the full beta spectral energy, which provided an optimal design on Schottky barrier width. The calculated results show that an 8 μm thick Schottky barrier can collect about 95% of the incident beta particle energy. Considering the actual limitations of current GaN growth technique, a Fe-doped compensation technique by MOCVD method can be used to realize the n-type GaN with a carrier concentration of 1×10 15 cm −3 , by which a GaN based Schottky betavoltaic micro-battery can achieve an energy conversion efficiency of 2.25% based on the theoretical calculations of semiconductor device physics. - Highlights: • Ni-63 is employed as the pure beta radioisotope source. • The Schottky junction betavoltaic battery is based on the wide-band gap semiconductor GaN. • The total energy deposition of incident beta particles in GaN was simulated by the Monte Carlo method. • A Fe-doped compensation technique is suggested to increase the energy conversion efficiency

Systematic Design of a Transimpedance Amplifier With Specified Electromagnetic Out-of-Band Interference Behavior

NARCIS (Netherlands)

van der Horst, Marcel J.; Linnenbank, Andre C.; Serdijn, Wouter A.; Long, John R.

2010-01-01

In negative-feedback amplifier design, electromagnetic interference (EMI) behavior is usually completely disregarded. EMI can, e.g., result in detection of low-frequency envelope variations of the usually high-frequency interfering signals. If the detected signals end up in the pass band of the

Metal contacts on ZnSe and GaN

Energy Technology Data Exchange (ETDEWEB)

Duxstad, Kristin Joy [Univ. of California, Berkeley, CA (United States). Materials Science and Mineral Engineering

1997-05-01

Recently, considerable interest has been focused on the development of blue light emitting materials and devices. The focus has been on GaN and ZnSe, direct band gap semiconductors with bands gaps of 3.4 and 2.6 eV, respectively. To have efficient, reliable devices it is necessary to have thermally and electrically stable Ohmic contacts. This requires knowledge of the metal-semiconductor reaction behavior. To date few studies have investigated this behavior. Much information has accumulated over the years on the behavior of metals on Si and GaAs. This thesis provides new knowledge for the more ionic wide band gap semiconductors. The initial reaction temperatures, first phases formed, and phase stability of Pt, Pd, and Ni on both semiconductors were investigated. The reactions of these metals on ZnSe and GaN are discussed in detail and correlated with predicted behavior. In addition, comparisons are made between these highly ionic semiconductors and Si and GaAs. The trends observed here should also be applicable to other II-VI and III-Nitride semiconductor systems, while the information on phase formation and stability should be useful in the development of contacts for ZnSe and GaN devices.

Mode control in a high-gain relativistic klystron amplifier

Science.gov (United States)

Li, Zheng-Hong; Zhang, Hong; Ju, Bing-Quan; Su, Chang; Wu, Yang

2010-05-01

Middle cavities between the input and output cavity can be used to decrease the required input RF power for the relativistic klystron amplifier. Meanwhile higher modes, which affect the working mode, are also easy to excite in a device with more middle cavities. In order for the positive feedback process for higher modes to be excited, a special measure is taken to increase the threshold current for such modes. Higher modes' excitation will be avoided when the threshold current is significantly larger than the beam current. So a high-gain S-band relativistic klystron amplifier is designed for the beam of current 5 kA and beam voltage 600 kV. Particle in cell simulations show that the gain is 1.6 × 105 with the input RF power of 6.8 kW, and that the output RF power reaches 1.1 GW.

Enhanced 1.32 μm fluorescence and broadband amplifying for O-band optical amplifier in Nd3+-doped tellurite glass

Science.gov (United States)

Zhou, Zi-zhong; Zhou, Ming-han; Su, Xiu-e.; Cheng, Pan; Zhou, Ya-xun

2017-01-01

WO3 oxides with relatively high phonon energy and different concentrations were introduced into the Nd3+-doped tellurite-based glasses of TeO2-ZnO-Na2O to improve the 1.32 μm band fluorescence emission. The absorption spectra, Raman spectra, 1.32 μm band fluorescence spectra and differential scanning calorimeter (DSC) curves were measured, together with the Judd-Ofelt intensity parameters, stimulated emission and gain parameters were calculated to evaluate the effects of WO3 amount on the glass structure and spectroscopic properties of 1.32 μm band fluorescence. It is shown that the introduction of an appropriate amount of WO3 oxide can effectively improve the 1.32 μm band fluorescence intensity through the enhanced multi-phonon relaxation (MPR) processes between the excited levels of Nd3+. The results indicate that the prepared Nd3+-doped tellurite glass with an appropriate amount of WO3 oxide is a potential gain medium applied for the O-band broad and high-gain fiber amplifier.

Theoretical investigation of electronic, magnetic and optical properties of Fe doped GaN thin films

International Nuclear Information System (INIS)

Salmani, E.; Mounkachi, O.; Ez-Zahraouy, H.; Benyoussef, A.; Hamedoun, M.; Hlil, E.K.

2013-01-01

Highlights: •Magnetic and optical properties Fe-doped GaN thin films are studied using DFT. •The band gaps of GaN thin films are larger than the one of the bulk. •The layer thickness and acceptor defect can switch the magnetic ordering. -- Abstract: Using first principles calculations based on spin-polarized density functional theory, the magnetic and optical properties of GaN and Fe-doped GaN thin films with and without acceptor defect is studied. The band structure calculations show that the band gaps of GaN thin films with 2, 4 and 6 layers are larger than the one of the bulk with wurtzite structure and decreases with increasing the film thickness. In Fe doped GaN thin films, we show that layer of thickness and acceptor defect can switch the magnetic ordering from disorder local moment (DLM) to ferromagnetic (FM) order. Without acceptor defect Fe doped GaN exhibits spin glass phase in 4 layers form and ferromagnetic state for 2 layers form of the thin films, while it exhibits ferromagnetic phase with acceptor defect such as vacancies defect for 2 and 4 layers. In the FM ordering, the thin films is half-metallic and is therefore ideal for spin application. The different energy between ferromagnetic state and disorder local moment state was evaluated. Moreover, the optical absorption spectra obtained by ab initio calculations confirm the ferromagnetic stability based on the charge state of magnetic impurities

Preliminary Analysis of X-Band and Ka-Band Radar for Use in the Detection of Icing Conditions Aloft

Science.gov (United States)

Reehorst, Andrew L.; Koenig, George G.

2004-01-01

NASA and the U.S. Army Cold Regions Research and Engineering Laboratory (CRREL) have an on-going activity to develop remote sensing technologies for the detection and measurement of icing conditions aloft. Radar has been identified as a strong tool for this work. However, since the remote detection of icing conditions with the intent to identify areas of icing hazard is a new and evolving capability, there are no set requirements for radar sensitivity. This work is an initial attempt to quantify, through analysis, the sensitivity requirements for an icing remote sensing radar. The primary radar of interest for cloud measurements is Ka-band, however, since NASA is currently using an X-band unit, this frequency is also examined. Several aspects of radar signal analysis were examined. Cloud reflectivity was calculated for several forms of cloud using two different techniques. The Air Force Geophysical Laboratory (AFGL) cloud models, with different drop spectra represented by a modified gamma distribution, were utilized to examine several categories of cloud formation. Also a fundamental methods approach was used to allow manipulation of the cloud droplet size spectra. And an analytical icing radar simulator was developed to examine the complete radar system response to a configurable multi-layer cloud environment. Also discussed is the NASA vertical pointing X-band radar. The radar and its data system are described, and several summer weather events are reviewed.

Thermoelectric properties of the 3C, 2H, 4H, and 6H polytypes of the wide-band-gap semiconductors SiC, GaN, and ZnO

Directory of Open Access Journals (Sweden)

Zheng Huang

2015-09-01

Full Text Available We have investigated the thermoelectric properties of the 3C, 2H, 4H, and 6H polytypes of the wide-band-gap(n-type semiconductors SiC, GaN, and ZnO based on first-principles calculations and Boltzmann transport theory. Our results show that the thermoelectric performance increases from 3C to 6H, 4H, and 2H structures with an increase of hexagonality for SiC. However, for GaN and ZnO, their power factors show a very weak dependence on the polytype. Detailed analysis of the thermoelectric properties with respect to temperature and carrier concentration of 4H-SiC, 2H-GaN, and 2H-ZnO shows that the figure of merit of these three compounds increases with temperature, indicating the promising potential applications of these thermoelectric materials at high temperature. The significant difference of the polytype-dependent thermoelectric properties among SiC, GaN, and ZnO might be related to the competition between covalency and ionicity in these semiconductors. Our calculations may provide a new way to enhance the thermoelectric properties of wide-band-gap semiconductors through atomic structure design, especially hexagonality design for SiC.

Investigation on acceptable reverberation time at various frequency bands in halls that present amplified music

DEFF Research Database (Denmark)

Adelman-Larsen, Niels Werner; Jeong, Cheol-Ho; Støfringsdal, Bård

2018-01-01

Subjective ratings from 25 professional musicians and sound engineers were obtained to assess two Danish rock venues of similar size and similar low frequency reverberation times, but different high frequency reverberation times. The musicians judged one hall significantly better than the other......, confirming a hypothesis that rock venues can have a longer reverberation time at mid to high frequencies at least in the empty condition. A fairly long reverberation time in the 63 Hz octave band is found to be acceptable, so the 125 Hz octave band is probably the single most important band to control...... for amplified music....

Demonstration of an RF front-end based on GaN HEMT technology

Science.gov (United States)

Ture, Erdin; Musser, Markus; Hülsmann, Axel; Quay, Rüdiger; Ambacher, Oliver

2017-05-01

The effectiveness of the developed front-end on blocking the communication link of a commercial drone vehicle has been demonstrated in this work. A jamming approach has been taken in a broadband fashion by using GaN HEMT technology. Equipped with a modulated-signal generator, a broadband power amplifier, and an omni-directional antenna, the proposed system is capable of producing jamming signals in a very wide frequency range between 0.1 - 3 GHz. The maximum RF output power of the amplifier module has been software-limited to 27 dBm (500 mW), complying to the legal spectral regulations of the 2.4 GHz ISM band. In order to test the proof of concept, a real-world scenario has been prepared in which a commercially-available quadcopter UAV is flown in a controlled environment while the jammer system has been placed in a distance of about 10 m from the drone. It has been proven that the drone of interest can be neutralized as soon as it falls within the range of coverage (˜3 m) which endorses the promising potential of the broadband jamming approach.

Positron annihilation study of Pd contacts on impurity-doped GaN

International Nuclear Information System (INIS)

Lee, Jong-Lam; Kim, Jong Kyu; Weber, Marc H.; Lynn, Kelvin G.

2001-01-01

Pd contacts on both n-type and p-type GaN were studied using positron annihilation spectroscopy, and the results were used to interpret the role of Ga vacancies on the band bending below the contacts. The concentration of Ga vacancy in Si-doped GaN was higher than that in the Mg-doped one. In Si-doped GaN, implanted positrons were annihilated at the nearer surface region and the interface of Pd/n-type GaN was detected by positrons clearly shifted toward the surface of Pd. This suggests that Ga vacancies could act as an interface state, pinning the Fermi level at the interface of Pd with GaN, leading to the production of a negative electric field below the interface. [copyright] 2001 American Institute of Physics

Excitation mechanisms of Er optical centers in GaN epilayers

International Nuclear Information System (INIS)

George, D. K.; Hawkins, M. D.; McLaren, M.; Vinh, N. Q.; Jiang, H. X.; Lin, J. Y.; Zavada, J. M.

2015-01-01

We report direct evidence of two mechanisms responsible for the excitation of optically active Er 3+ ions in GaN epilayers grown by metal-organic chemical vapor deposition. These mechanisms, resonant excitation via the higher-lying inner 4f shell transitions and band-to-band excitation of the semiconductor host, lead to narrow emission lines from isolated and the defect-related Er optical centers. However, these centers have different photoluminescence spectra, local defect environments, decay dynamics, and excitation cross sections. The photoluminescence at 1.54 μm from the isolated Er optical center which can be excited by either mechanism has the same decay dynamics, but possesses a much higher excitation cross-section under band-to-band excitation. In contrast, the photoluminescence at 1.54 μm from the defect-related Er optical center can only be observed through band-to-band excitation but has the largest excitation cross-section. These results explain the difficulty in achieving gain in Er doped GaN and indicate approaches for realization of optical amplification, and possibly lasing, at room temperature

Electrical transport in GaN and InN nanowires; Elektrischer Transport in GaN- und InN-Nanodraehten

Energy Technology Data Exchange (ETDEWEB)

Richter, Thomas Fabian

2008-12-19

This thesis discusses the analysis of the electrical transport in GaN and InN nanowires at room temperature and deep temperatures. From those measurements two different transport models for those two in matter of the band banding completely different materials have been found. In the investigation of the GaN nanowires the main focus was the electrical transport in dependence of the diameter and the n-doping. With the use of IV-measurements on those MBE grown nanowires with different diameters at dark and under UV illumination as well as the decay of the persistent photocurrent, it was possible to find an for GaN untypical behaviour. The electrical transport in those wires is extremely diameter dependent. The dark current shows space charged limited current. With the help of those cognitions a diameter dependent transport model could be found. The transport phenomena in those wires is based on the diameter depending band bending at the edge of the wires caused by the Fermi level pinning inside the forbidden band. This model can be fit to the data with the three parameter doping, fermi level pinning and wire diameter. On the base of those effects a method to determine the doping concentration inside those wires without field effect measurements and contact resistance has been developed. The defect structure inside those wires has been analysed with the help of spectral photoluminescence measurements. Here several defect bands have been found and it was possible with help of several contacts on one single wire to determine different defect regions along the wire and to explain them by the lattice mismatch between nanowire and substrate. Further temperature depending measurements and investigations on Schottky contacted wires as well as on GaN wires with AlN tunnel structures complete the work on GaN. The electrical characterisation on a large scale of undoped and doped InN nanowires shows linear growth of the dark current with the diameter up to wires of around 100 nm

Structural characterisation of GaN and GaN:O thin films

International Nuclear Information System (INIS)

Granville, S.; Budde, F.; Koo, A.; Ruck, B.J.; Trodahl, H.J.; Bittar, A.; Metson, J.B.; James, B.J.; Kennedy, V.J.; Markwitz, A.; Prince, K.E.

2005-01-01

In its crystalline form, the wide band-gap semiconductor GaN is of exceptional interest in the development of suitable materials for short wavelength optoelectronic devices. One of the barriers to its potential usefulness however is the large concentration of defects present even in MBE-grown material often due to the lattice mismatch of the GaN with common substrate materials. Calculations have suggested that GaN films grown with an amorphous structure retain many of the useful properties of the crystalline material, including the wide band-gap and a low density of states in the gap, and thus may be a suitable alternative to the single crystal GaN for a variety of applications. We have performed structural and compositional measurements on heavily disordered GaN thin films with and without measureable O and H concentrations grown using ion-assisted deposition. X-ray diffraction and x-ray absorption fine structure measurements show that stoichiometric films are composed of nanocrystallites of ∼3-4 nm in size and that GaN films containing O to 10 at % or greater are amorphous. Rutherford backscattering spectroscopy (RBS) was performed and nuclear reaction analysis (NRA) measurements were made to determine the elemental composition of the films and elastic recoil detection (ERD) detected the hydrogen concentrations. Secondary ion mass spectroscopy (SIMS) measurements were used to depth profile the films. X-ray photoelectron spectroscopy (XPS) measurements probed the bonding environment of the Ga in the films. (author). 2 figs., 1 tab

A G-band terahertz monolithic integrated amplifier in 0.5-μm InP double heterojunction bipolar transistor technology

International Nuclear Information System (INIS)

Li Ou-Peng; Zhang Yong; Xu Rui-Min; Cheng Wei; Wang Yuan; Niu Bing; Lu Hai-Yan

2016-01-01

Design and characterization of a G-band (140–220 GHz) terahertz monolithic integrated circuit (TMIC) amplifier in eight-stage common-emitter topology are performed based on the 0.5-μm InGaAs/InP double heterojunction bipolar transistor (DHBT). An inverted microstrip line is implemented to avoid a parasitic mode between the ground plane and the InP substrate. The on-wafer measurement results show that peak gains are 20 dB at 140 GHz and more than 15-dB gain at 140–190 GHz respectively. The saturation output powers are −2.688 dBm at 210 GHz and −2.88 dBm at 220 GHz, respectively. It is the first report on an amplifier operating at the G-band based on 0.5-μm InP DHBT technology. Compared with the hybrid integrated circuit of vacuum electronic devices, the monolithic integrated circuit has the advantage of reliability and consistency. This TMIC demonstrates the feasibility of the 0.5-μm InGaAs/InP DHBT amplifier in G-band frequencies applications. (paper)

Effects of thin heavily Mg-doped GaN capping layer on ohmic contact formation of p-type GaN

International Nuclear Information System (INIS)

Wu, L L; Zhao, D G; Jiang, D S; Chen, P; Le, L C; Li, L; Liu, Z S; Zhang, S M; Zhu, J J; Wang, H; Zhang, B S; Yang, H

2013-01-01

The growth condition of thin heavily Mg-doped GaN capping layer and its effect on ohmic contact formation of p-type GaN were investigated. It is confirmed that the excessive Mg doping can effectively enhance the Ni/Au contact to p-GaN after annealing at 550 °C. When the flow rate ratio between Mg and Ga gas sources is 6.4% and the layer width is 25 nm, the capping layer grown at 850 °C exhibits the best ohmic contact properties with respect to the specific contact resistivity (ρ c ). This temperature is much lower than the conventional growth temperature of Mg-doped GaN, suggesting that the deep-level-defect induced band may play an important role in the conduction of capping layer. (paper)

A wave-bending structure at Ka-band using 3D-printed metamaterial

Science.gov (United States)

Wu, Junqiang; Liang, Min; Xin, Hao

2018-03-01

Three-dimensional printing technologies enable metamaterials of complex structures with arbitrary inhomogeneity. In this work, a 90° wave-bending structure at the Ka-band (26.5-40 GHz) based on 3D-printed metamaterials is designed, fabricated, and measured. The wave-bending effect is realized through a spatial distribution of varied effective dielectric constants. Based on the effective medium theory, different effective dielectric constants are accomplished by special, 3D-printable unit cells, which allow different ratios of dielectric to air at the unit cell level. In contrast to traditional, metallic-structure-included metamaterial designs, the reported wave-bending structure here is all dielectric and implemented by the polymer-jetting technique, which features rapid, low-cost, and convenient prototyping. Both simulation and experiment results demonstrate the effectiveness of the wave-bending structure.

Millimeter-wave pseudomorphic HEMT MMIC phased array components for space communications

Science.gov (United States)

Lan, G. L.; Pao, C. K.; Wu, C. S.; Mandolia, G.; Hu, M.; Yuan, S.; Leonard, Regis

1991-01-01

Recent advances in pseudomorphic HEMT MMIC (PMHEMT/MMIC) technology have made it the preferred candidate for high performance millimeter-wave components for phased array applications. This paper describes the development of PMHEMT/MMIC components at Ka-band and V-band. Specifically, the following PMHEMT/MMIC components will be described: power amplifiers at Ka-band; power amplifiers at V-band; and four-bit phase shifters at V-band. For the Ka-band amplifier, 125 mW output power with 5.5 dB gain and 21 percent power added efficiency at 2 dB compression point has been achieved. For the V-band amplifier, 112 mW output power with 6 dB gain and 26 percent power added efficiency has been achieved. And, for the V-band phase shifter, four-bit (45 deg steps) phase shifters with less than 8 dB insertion loss from 61 GHz to 63 GHz will be described.

Optically active centers in Eu implanted, Eu in situ doped GaN, and Eu doped GaN quantum dots

International Nuclear Information System (INIS)

Bodiou, L.; Braud, A.; Doualan, J.-L.; Moncorge, R.; Park, J. H.; Munasinghe, C.; Steckl, A. J.; Lorenz, K.; Alves, E.; Daudin, B.

2009-01-01

A comparison is presented between Eu implanted and Eu in situ doped GaN thin films showing that two predominant Eu sites are optically active around 620 nm in both types of samples with below and above bandgap excitation. One of these sites, identified as a Ga substitutional site, is common to both types of Eu doped GaN samples despite the difference in the GaN film growth method and in the doping technique. High-resolution photoluminescence (PL) spectra under resonant excitation reveal that in all samples these two host-sensitized sites are in small amount compared to the majority of Eu ions which occupy isolated Ga substitutional sites and thus cannot be excited through the GaN host. The relative concentrations of the two predominant host-sensitized Eu sites are strongly affected by the annealing temperature for Eu implanted samples and by the group III element time opening in the molecular beam epitaxy growth. Red luminescence decay characteristics for the two Eu sites reveal different excitation paths. PL dynamics under above bandgap excitation indicate that Eu ions occupying a Ga substitutional site are either excited directly into the 5 D 0 level or into higher excited levels such as 5 D 1 , while Eu ions sitting in the other site are only directly excited into the 5 D 0 level. These differences are discussed in terms of the spectral overlap between the emission band of a nearby bound exciton and the absorption bands of Eu ions. The study of Eu doped GaN quantum dots reveals the existence of only one type of Eu site under above bandgap excitation, with Eu PL dynamics features similar to Eu ions in Ga substitutional sites

Ab initio study of metastability of Eu{sup 3+} defect complexes in GaN

Energy Technology Data Exchange (ETDEWEB)

Ouma, Cecil N.M., E-mail: Cecil.Ouma@up.ac.za; Meyer, Walter E.

2014-04-15

Density functional theory (DFT) within the generalized gradient approximation (GGA) has been used to study the structural and electronic properties of Eu{sup 3+} defect complexes in GaN under Ga-rich conditions. Two distinct configurations of the Eu{sub Ga}V{sub N} defect complex, the axial and basal configuration, have been investigated. We report two forms of metastable defects namely; the Negative U defect in the lower half of the GaN band-gap and a metastable defect with two distinct configurations each with levels at E{sub C} −0.46 eV and −0.56 eV in the upper half of the GaN band-gap.

Calculation of attenuation by rain using the DAH model and diameter of antennas for the Ka Band in Mexico; Calculo de atenuacion por lluvia usando el modelo DAH y diametro de antena para Banda Ka en Mexico

Energy Technology Data Exchange (ETDEWEB)

Landeros-Ayala, S.; Neri-Vela, R; Cruz-Sanchez, H.; Hernandez-Bautista, H. [Universidad Nacional Autonoma de Mexico, Mexico, D.F. (Mexico)

2002-03-01

In the last years, the peak in the demand of satellite communication service has caused the saturation in the use of the frequencies corresponding to the band, Cand Ku. Due to this, the engineers have looked for viable alternatives, in order to satisfy the current requisition, as well as the future demand, for which a considerable increment is expected. One of these alternatives is the use of the Ka Band (20Hz/30Hz), that is why the importance of studying the propagation effects that are experienced at these frequencies, especially the attenuation effect by rain, as in this case, where it is significant. The present article has the purpose to describe the use of the Modelo DAH (whose authors are Asoka Dissanayake, Jeremy Allnutt and Fatim Haidara), mixed with the global maps of distribution of rain by Crane, for the calculation of the attenuation by rain in satellite communication systems operated in the Ka Band. Besides, antenna diameters for the systems of communications in Ka Band in different locations of the Mexican Republic, using for it the attenuation margins for rain obtained through the Modelo DAH, and using as references the characteristics of the ANIK F2 satellite and a terrestrial station VSAT, are proposed. [Spanish] En los ultimos anos, el auge en la demanda de servicios de comunicacion por satelite ha provocado la saturacion en los uso de la frecuencia correspondientes a las bandas C y Ku. Debido a esta razon, se han buscado alternativas viables para poder satisfacer la demanda actual, asi como la demanda futura, para la cual se espera un incremento considerable. Una de estas alternativas es el uso de Banda Ka (20Hz/30Hz), de ahi la importancia del estudio sobre los efectos de programacion que se experimentan a esta frecuencia, en especial, el efecto de atencion por lluvias, ya que sen este caso resulta ser significativa. El presente articulo tiene como finalidad describir el uso del Modelo DAH (cuyos autores son Asoka Dissanayake, Jeremy Allnutt y

A Mobile Communications Space Link Between the Space Shuttle Orbiter and the Advanced Communications Technology Satellite

Science.gov (United States)

Fink, Patrick; Arndt, G. D.; Bondyopadhyay, P.; Shaw, Roland

1994-01-01

A communications experiment is described as a link between the Space Shuttle Orbiter (SSO) and the Advanced Communications Technology Satellite (ACTS). Breadboarding for this experiment has led to two items with potential for commercial application: a 1-Watt Ka-band amplifier and a Ka-band, circularly polarized microstrip antenna. Results of the hybrid Ka-band amplifier show gain at 30 dB and a saturated output power of 28.5 dBm. A second version comprised of MMIC amplifiers is discussed. Test results of the microstrip antenna subarray show a gain of approximately 13 dB and excellent circular polarization.

Design and analysis of an integrated pulse modulated s-band power amplifier in gallium nitride process

Energy Technology Data Exchange (ETDEWEB)

Sedlock, Steve [Kansas State Univ., Manhattan, KS (United States)

2012-01-01

The design of power amplifiers in any semi-conductor process is not a trivia exercise and it is often encountered that the simulated solution is qualitatively different than the results obtained. Phenomena such as oscillation occurring either in-band or out of band and sometimes at subharmonic intervals, continuous spectrum noticed in some frequency bands, often referred to as chaos, and jumps and hysteresis effects can all be encountered and render a design useless. All of these problems might have been identified through a more rigorous approach to stability analysis. Designing for stability is probably the one area of amplifier design that receives the least amount of attention but incurs the most catastrophic of effects if it is not performed properly. Other parameters such as gain, power output, frequency response and even matching may suitable mitigation paths. But the lack of stability in an amplifier has no mitigating path. In addition to of loss of the design completely there are the increased production cycle costs, costs involved with investigating and resolving the problem and the costs involved with schedule slips or delays resulting from it. The Linville or Rollett stability criteria that many microwave engineers follow and rely exclusively on is not sufficient by itself to ensure a stable and robust design. It will be shown that the universal belief that unconditional stability is obtained through an analysis of the scattering matrix S to determine if 1 and |{Delta}{sub S}| < 1 is only part of the procedure and other tools must be used to validate the criteria. The research shown contributes to the state of the art by developing a more thorough stability design technique for designing amplifiers of any class, whether that be current mode or switch mode, than is currently undertaken with the goal of obtaining first pass design success.

A compact broadband high efficient X-band 9-watt PHEMT MMIC high-power amplifier for phased array radar applications

NARCIS (Netherlands)

Hek, A.P. de; Hunneman, P.A.H.; Demmler, M.; Hulsmann, A.

1999-01-01

ln this paper the development and measurement results of a compact broadband 9-Watt high efficient X-band high-power amplifier are discussed. The described amplifier has the following state-of-the art performance: an average ouput power of 9 Watt, a gain of 20 dB and an average Power Added

GaN and ZnO nanostructures

Energy Technology Data Exchange (ETDEWEB)

Fuendling, Soenke; Soekmen, Uensal; Behrends, Arne; Al-Suleiman, Mohamed Aid Mansur; Merzsch, Stephan; Li, Shunfeng; Bakin, Andrey; Wehmann, Hergo-Heinrich; Waag, Andreas [Institut fuer Halbleitertechnik, Technische Universitaet Braunschweig, Braunschweig (Germany); Laehnemann, Jonas; Jahn, Uwe; Trampert, Achim; Riechert, Henning [Paul-Drude-Institut fuer Festkoerperelektronik, Berlin (Germany)

2010-10-15

GaN and ZnO are both wide band gap semiconductors with interesting properties concerning optoelectronic and sensor device applications. Due to the lack or the high costs of native substrates, alternatives like sapphire, silicon, or silicon carbide are taken, but the resulting lattice and thermal mismatches lead to increased defect densities which reduce the material quality. In contrast, nanostructures with high aspect ratio have lower defect densities as compared to layers. In this work, we give an overview on our results achieved on both ZnO as well as GaN based nanorods. ZnO nanostructures were grown by a wet chemical approach as well as by VPT on different substrates - even on flexible polymers. To compare the growth results we analyzed the structures by XRD and PL and show possible device applications. The GaN nano- and microstructures were grown by metal organic vapor phase epitaxy either in a self-organized process or by selective area growth for a better control of shape and material composition. Finally we take a look onto possible device applications, presenting our attempts, e.g., to build LEDs based on GaN nanostructures. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

Theoretical study for heterojunction surface of NEA GaN photocathode dispensed with Cs activation

Science.gov (United States)

Xia, Sihao; Liu, Lei; Wang, Honggang; Wang, Meishan; Kong, Yike

2016-09-01

For the disadvantages of conventional negative electron affinity (NEA) GaN photocathodes activated by Cs or Cs/O, new-type NEA GaN photocathodes with heterojunction surface dispensed with Cs activation are investigated based on first-principle study with density functional theory. Through the growth of an ultrathin n-type GaN cap layer on p-type GaN emission layer, a p-n heterojunction is formed on the surface. According to the calculation results, it is found that Si atoms tend to replace Ga atoms to result in an n-type doped cap layer which contributes to the decreasing of work function. After the growth of n-type GaN cap layer, the atom structure near the p-type emission layer is changed while that away from the surface has no obvious variations. By analyzing the E-Mulliken charge distribution of emission surface with and without cap layer, it is found that the positive charge of Ga and Mg atoms in the emission layer decrease caused by the cap layer, while the negative charge of N atom increases. The conduction band moves downwards after the growth of cap layer. Si atom produces donor levels around the valence band maximum. The absorption coefficient of GaN emission layer decreases and the reflectivity increases caused by n-type GaN cap layer.

Surface morphology of homoepitaxial GaN grown on non- and semipolar GaN substrates

Energy Technology Data Exchange (ETDEWEB)

Wernicke, Tim; Hoffmann, Veit; Netzel, Carsten; Knauer, Arne; Weyers, Markus [FBH, Berlin (Germany); Ploch, Simon; Rass, Jens [Institute of Solid State Physics, TU Berlin (Germany); Schade, Lukas; Schwarz, Ulrich [IAF, Freiburg (Germany); Kneissl, Michael [FBH, Berlin (Germany); Institute of Solid State Physics, TU Berlin (Germany)

2010-07-01

Recently a number of groups have reported laser diodes in the green spectral range on semi- and nonpolar GaN. Nevertheless the growth process on semipolar surfaces is not well understood. In this study 3.5 {mu} m thick MOVPE grown GaN layers on bulk m-plane, (11 anti 22), (10 anti 12), and (10 anti 11) GaN substrates were investigated. XRD rocking curves exhibit a FWHM of less than 150{sup ''}, indicating excellent crystalline quality. But the surface morphology exhibits hillocks with a height of 1 {mu}m and lateral extension of 150 {mu}m in many cases. Depending on the substrate orientation and the growth temperature different hillock shapes were observed. Morphology and luminescence data point to threading dislocations as formation sources. In QWs the hillock structure is reproduced in the emission intensity and wavelength distribution on (10 anti 11) but not on the m-plane surfaces. The hillocks could be eliminated for the semipolar planes (not for the m-plane) by increasing the reactor pressure and lowering the growth temperature. Hillock free separate confinement laser structures emitting at 405 nm feature a very homogeneous luminescence in micro-PL and show amplified spontaneous emission under high power stripe excitation. Furthermore the In incorporation was found to be highest in QWs on (10 anti 11).

Semipolar GaN grown on m-plane sapphire using MOVPE

Energy Technology Data Exchange (ETDEWEB)

Wernicke, Tim; Netzel, Carsten; Weyers, Markus [Ferdinand-Braun-Institut fuer Hoechstfrequenztechnik, Berlin (Germany); Kneissl, Michael [Ferdinand-Braun-Institut fuer Hoechstfrequenztechnik, Berlin (Germany); Institute of Solid State Physics, Technical University of Berlin (Germany)

2008-07-01

We have investigated the MOVPE growth of semipolar gallium nitride (GaN) films on (10 anti 1 0) m-plane sapphire substrates. Specular GaN films with a RMS roughness (10 x 10 {mu}m{sup 2}) of 15.2 nm were obtained and an arrowhead like structure aligned along[ anti 2 113] is prevailing. The orientation relationship was determined by XRD and yielded (212){sub GaN} parallel (10 anti 10){sub sapphire} and [anti 2113]{sub GaN} parallel [0001]{sub sapphire} as well as [anti 2113]{sub GaN} parallel [000 anti 1]{sub sapphire}. PL spectra exhibited near band edge emission accompanied by a strong basal plane stacking fault emission. In addition lower energy peaks attributed to prismatic plane stacking faults and donor acceptor pair emission appeared in the spectrum. With similar growth conditions also (1013) GaN films on m-plane sapphire were obtained. In the later case we found that the layer was twinned, crystallites with different c-axis orientation were present. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

The trap states in lightly Mg-doped GaN grown by MOVPE on a freestanding GaN substrate

Science.gov (United States)

Narita, Tetsuo; Tokuda, Yutaka; Kogiso, Tatsuya; Tomita, Kazuyoshi; Kachi, Tetsu

2018-04-01

We investigated traps in lightly Mg-doped (2 × 1017 cm-3) p-GaN fabricated by metalorganic vapor phase epitaxy (MOVPE) on a freestanding GaN substrate and the subsequent post-growth annealing, using deep level transient spectroscopy. We identified four hole traps with energy levels of EV + 0.46, 0.88, 1.0, and 1.3 eV and one electron trap at EC - 0.57 eV in a p-type GaN layer uniformly doped with magnesium (Mg). The Arrhenius plot of hole traps with the highest concentration (˜3 × 1016 cm-3) located at EV + 0.88 eV corresponded to those of hole traps ascribed to carbon on nitrogen sites in n-type GaN samples grown by MOVPE. In fact, the range of the hole trap concentrations at EV + 0.88 eV was close to the carbon concentration detected by secondary ion mass spectroscopy. Moreover, the electron trap at EC - 0.57 eV was also identical to the dominant electron traps commonly observed in n-type GaN. Together, these results suggest that the trap states in the lightly Mg-doped GaN grown by MOVPE show a strong similarity to those in n-type GaN, which can be explained by the Fermi level close to the conduction band minimum in pristine MOVPE grown samples due to existing residual donors and Mg-hydrogen complexes.

Study of GaN nanorods converted from β-Ga2O3

Science.gov (United States)

Li, Yuewen; Xiong, Zening; Zhang, Dongdong; Xiu, Xiangqian; Liu, Duo; Wang, Shuang; Hua, Xuemei; Xie, Zili; Tao, Tao; Liu, Bin; Chen, Peng; Zhang, Rong; Zheng, Youdou

2018-05-01

We report here high-quality β-Ga2O3 nanorods (NRs) grown on sapphire substrates by hydrothermal method. Ammoniating the β-Ga2O3 NRs results in strain-free wurtzite gallium nitride (GaN) NRs. It was shown by XRD and Raman spectroscopy that β-Ga2O3 was partially converted to GaN/β-Ga2O3 at 1000 °C and then completely converted to GaN NRs at 1050 °C, as confirmed by high-resolution transmission electron microscopy (HRTEM). There is no band-edge emission of β-Ga2O3 in the cathodoluminescence spectrum, and only a deep-level broad emission observed at 3.68-3.73 eV. The band edge emission (3.39 eV) of GaN NRs converted from β-Ga2O3 can also be observed.

Benefits and Drawbacks of A High Frequency Gan Zvzcps Converter

Directory of Open Access Journals (Sweden)

Blanes J. M.

2017-01-01

Full Text Available This paper presents the benefits and drawbacks of replacing the traditional Si Mosfets transistors with enhancement mode GaN transistors in a Half-Bridge Zero Voltage and Zero Current Switching Power Switching (ZVZCPS converter. This type of converters is usually used as Electronic Power Converters (EPC for telecommunication satellites travelling-wave tube amplifiers (TWTAs. In this study, firstly the converter is theoretically analysed, obtaining its operation, losses and efficiency equations. From these equations, optimizations maps based on the main system parameters are obtained. These optimization maps are the key to quantify the potential benefits of GaN transistors in this type of converters. Theoretical results show that using GaN transistors, the frequency of the converter can be pushed from 125kHz to 830kHz without sacrificing the converter efficiency. This frequency increase is directly related to reduction on the EPC size and weight.

Precision Deployable Mast for the SWOT KaRIn Instrument

Data.gov (United States)

National Aeronautics and Space Administration — Design and prototype a lightweight, precision-deployable mast for the Ka-band Radar Interferometer (KaRIn) antennas in the Surface Water and Ocean Topography (SWOT)...

Spatial Power Combining Amplifier for Ground and Flight Applications

Science.gov (United States)

Velazco, J. E.; Taylor, M.

2016-11-01

-sections than comparable klystrons and traveling-wave tube counterparts and thus avoid RF breakdown and thermal issues common to vacuum tubes. We present a basic description of the SPCA mechanism and initial results of an S-band (2.4 GHz) 100-W, 45-dB gain SPCA prototype. We also discuss future X-band (8.4 GHz), Ka-band (32 GHz), and W-band (94 GHz) SPCA designs for both radar and communications applications.

Electron holography studies of the charge on dislocations in GaN

Energy Technology Data Exchange (ETDEWEB)

Cherns, D.; Jiao, C.G.; Mokhtari, H. [H.H. Wills Physics Laboratory, University of Bristol, Tyndall Avenue, Bristol BS8 1TL (United Kingdom); Cai, J.; Ponce, F.A. [Department of Physics and Astronomy, Arizona State University, Tempe, AZ85287 (United States)

2002-12-01

The measurement of charge on dislocations in GaN by electron holography is described. Recent results are presented showing that edge dislocations in n-doped GaN are highly negatively charged, whereas those in p-doped GaN are positively charged. It is shown that the results are consistent with a model which assumes Fermi level pinning at dislocation states about 2.5 V below the conduction band edge. The application of electron holography to screw dislocations, and the dependence of the observations on the dislocation core structure, are also discussed. (Abstract Copyright [2002], Wiley Periodicals, Inc.)

Effects of material growth technique and Mg doping on Er3+ photoluminescence in Er-implanted GaN

International Nuclear Information System (INIS)

Kim, S.; Henry, R. L.; Wickenden, A. E.; Koleske, D. D.; Rhee, S. J.; White, J. O.; Myoung, J. M.; Kim, K.; Li, X.; Coleman, J. J.

2001-01-01

Photoluminescence (PL) and photoluminescence excitation (PLE) spectroscopies have been carried out at 6 K on the ∼1540 nm 4 I 13/2 - 4 I 15/2 emissions of Er 3+ in Er-implanted and annealed GaN. These studies revealed the existence of multiple Er 3+ centers and associated PL spectra in Er-implanted GaN films grown by metalorganic chemical vapor deposition, hydride vapor phase epitaxy, and molecular beam epitaxy. The results demonstrate that the multiple Er 3+ PL centers and below-gap defect-related absorption bands by which they are selectively excited are universal features of Er-implanted GaN grown by different techniques. It is suggested that implantation-induced defects common to all the GaN samples are responsible for the Er site distortions that give rise to the distinctive, selectively excited Er 3+ PL spectra. The investigations of selectively excited Er 3+ PL and PLE spectra have also been extended to Er-implanted samples of Mg-doped GaN grown by various techniques. In each of these samples, the so-called violet-pumped Er 3+ PL band and its associated broad violet PLE band are significantly enhanced relative to the PL and PLE of the other selectively excited Er 3+ PL centers. More importantly, the violet-pumped Er 3+ PL spectrum dominates the above-gap excited Er 3+ PL spectrum of Er-implanted Mg-doped GaN, whereas it was unobservable under above-gap excitation in Er-implanted undoped GaN. These results confirm the hypothesis that appropriate codopants can increase the efficiency of trap-mediated above-gap excitation of Er 3+ emission in Er-implanted GaN. [copyright] 2001 American Institute of Physics

The Nike electron-beam-pumped KrF laser amplifiers

International Nuclear Information System (INIS)

Sethian, J.D.; Pawley, C.J.; Obenschain, S.P.

1997-01-01

Nike is a recently completed multikilojoule krypton-fluoride (KrF) laser that has been built to study the physics of direct-drive inertial confinement fusion. The two final amplifiers of the Nike laser are both electron-beam-pumped systems. This paper describes these two amplifiers, with an emphasis on the pulsed power. The smaller of the two has a 20 x 20 cm aperture, and produces an output laser beam energy in excess of 100 J. This 20 cm Amplifier uses a single 12 kJ Marx generator to inject two 300 kV, 75 kA, 140 ns flat-top electron beams into opposite sides of the laser cell. The larger amplifier in Nike has a 60 x 60 cm aperture, and amplifies the laser beam up to 5 kJ. This 60 cm amplifier has two independent electron beam systems. Each system has a 170 kJ Marx generator that produces a 670 kV, 540 kA, 240 ns flat-top electron beam. Both amplifiers are complete, fully integrated into the laser, meet the Nike system requirements, and are used routinely for laser-target experiments

Magneto-ballistic transport in GaN nanowires

International Nuclear Information System (INIS)

Santoruvo, Giovanni; Allain, Adrien; Ovchinnikov, Dmitry; Matioli, Elison

2016-01-01

The ballistic filtering property of nanoscale crosses was used to investigate the effect of perpendicular magnetic fields on the ballistic transport of electrons on wide band-gap GaN heterostructures. The straight scattering-less trajectory of electrons was modified by a perpendicular magnetic field which produced a strong non-linear behavior in the measured output voltage of the ballistic filters and allowed the observation of semi-classical and quantum effects, such as quenching of the Hall resistance and manifestation of the last plateau, in excellent agreement with the theoretical predictions. A large measured phase coherence length of 190 nm allowed the observation of universal quantum fluctuations and weak localization of electrons due to quantum interference up to ∼25 K. This work also reveals the prospect of wide band-gap GaN semiconductors as a platform for basic transport and quantum studies, whose properties allow the investigation of ballistic transport and quantum phenomena at much larger voltages and temperatures than in other semiconductors.

Magneto-ballistic transport in GaN nanowires

Energy Technology Data Exchange (ETDEWEB)

Santoruvo, Giovanni, E-mail: giovanni.santoruvo@epfl.ch; Allain, Adrien; Ovchinnikov, Dmitry; Matioli, Elison, E-mail: elison.matioli@epfl.ch [Ecole Polytechnique Fédérale de Lausanne (EPFL), CH 1015 Lausanne (Switzerland)

2016-09-05

The ballistic filtering property of nanoscale crosses was used to investigate the effect of perpendicular magnetic fields on the ballistic transport of electrons on wide band-gap GaN heterostructures. The straight scattering-less trajectory of electrons was modified by a perpendicular magnetic field which produced a strong non-linear behavior in the measured output voltage of the ballistic filters and allowed the observation of semi-classical and quantum effects, such as quenching of the Hall resistance and manifestation of the last plateau, in excellent agreement with the theoretical predictions. A large measured phase coherence length of 190 nm allowed the observation of universal quantum fluctuations and weak localization of electrons due to quantum interference up to ∼25 K. This work also reveals the prospect of wide band-gap GaN semiconductors as a platform for basic transport and quantum studies, whose properties allow the investigation of ballistic transport and quantum phenomena at much larger voltages and temperatures than in other semiconductors.

Simultaneous Ka-Band Site Characterization: Goldstone, CA, White Sands, NM, and Guam, USA

Science.gov (United States)

Acosta, Roberto; Morse, Jacquelynne; Zemba, Michael; Nessel, James; Morabito, David; Caroglanian, Armen

2011-01-01

To statistically characterize atmospheric effects on Ka-band links at NASA operational sites, NASA has constructed site test interferometers (STI s) which directly measure the tropospheric phase stability and rain attenuation. These instruments observe an unmodulated beacon signal broadcast from a geostationary satellite (e.g., Anik F2) and measure the phase difference between the signals received by the two antennas and its signal attenuation. Three STI s have been deployed so far: the first one at the NASA Deep Space Network Tracking Complex in Goldstone, California (May 2007); the second at the NASA White Sands Complex, in Las Cruses, New Mexico (February 2009); and the third at the NASA Tracking and Data Relay Satellite (TDRS) Remote Ground Terminal (GRGT) complex in Guam (May 2010). Two station-years of simultaneous atmospheric phase fluctuation data have been collected at Goldstone and White Sands, while one year of data has been collected in Guam. With identical instruments operating simultaneously, we can directly compare the phase stability and rain attenuation at the three sites. Phase stability is analyzed statistically in terms of the root-mean-square (rms) of the tropospheric induced time delay fluctuations over 10 minute blocks. For two years, the time delay fluctuations at the DSN site in Goldstone, CA, have been better than 2.5 picoseconds (ps) for 90% of the time (with reference to zenith), meanwhile at the White Sands, New Mexico site, the time delay fluctuations have been better than 2.2 ps with reference to zenith) for 90% of time. For Guam, the time delay fluctuations have been better than 12 ps (reference to zenith) at 90% of the time, the higher fluctuations are as expected from a high humidity tropical rain zone. This type of data analysis, as well as many other site quality characteristics (e.g., rain attenuation, infrastructure, etc.) will be used to determine the suitability of all the sites for NASA s future communication services at Ka-band.

Photoassisted Kelvin probe force microscopy at GaN surfaces: The role of polarity

Science.gov (United States)

Wei, J. D.; Li, S. F.; Atamuratov, A.; Wehmann, H.-H.; Waag, A.

2010-10-01

The behavior of GaN surfaces during photoassisted Kelvin probe force microscopy is demonstrated to be strongly dependant on surface polarity. The surface photovoltage of GaN surfaces illuminated with above-band gap light is analyzed as a function of time and light intensity. Distinct differences between Ga-polar and N-polar surfaces could be identified, attributed to photoinduced chemisorption of oxygen during illumination. These differences can be used for a contactless, nondestructive, and easy-performable analysis of the polarity of GaN surfaces.

Investigations on 40 MeV Li3+ ions irradiated GaN epilayers

International Nuclear Information System (INIS)

Suresh Kumar, V.; Kumar, J.; Kanjilal, D.; Asokan, K.; Mohanty, T.; Tripathi, A.; Rossi, Francisca; Zappettini, A.; Lazzarani, L.; Ferrari, C.

2008-01-01

The Metal Organic Chemical Vapour Deposition (MOCVD) grown n-type Gallium nitride (GaN) layers on sapphire (0 0 0 1) substrates have been irradiated at low and room temperatures with 40 MeV Li 3+ ions at the fluence of 1 x 10 13 ions cm -2 . Irradiated samples were characterised by using X-ray diffraction (XRD), photoluminescence (PL), Raman spectroscopy and atomic force microscopy (AFM). XRD results show that the formation of Ga 2 O 3 has been observed upon irradiation. This is due to interface mixing of GaN/Al 2 O 3 , at both temperatures. Also the GaN (0 0 0 2) peak splits into two at low temperature irradiation. PL measurements show a yellow emission band shift towards blue band side upon irradiation at 77 K. Raman studies indicate that the lattice disorder is high at room temperature irradiation compared to low temperature irradiation. AFM images indicate the increasing surface roughness after ion irradiation at room temperature when compared to pristine GaN and low temperature irradiated GaN. These observations are discussed in detail with the use of complementary techniques

Use of GaN as a Scintillating Ionizing Radiation Detector

Science.gov (United States)

Wensman, Johnathan; Guardala, Noel; Mathur, Veerendra; Alasagas, Leslie; Vanhoy, Jeffrey; Statham, John; Marron, Daniel; Millett, Marshall; Marsh, Jarrod; Currie, John; Price, Jack

2017-09-01

Gallium nitride (GaN) is a III/V direct bandgap semiconductor which has been used in light emitting diodes (LEDs) since the 1990s. Currently, due to a potential for increased efficiency, GaN is being investigated as a replacement for silicon in power electronics finding potential uses ranging from data centers to electric vehicles. In addition to LEDs and power electronics though, doped GaN can be used as a gamma insensitive fast neutron detector due to the direct band-gap, light propagation properties, and response to ionizing radiations. Investigation of GaN as a semiconductor scintillator for use in a radiation detection system involves mapping the response function of the detector crystal over a range of photon and neutron energies, and measurements of light generation in the GaN crystal due to proton, alpha, and nitrogen projectiles. In this presentation we discuss the measurements made to date, and plausible interpretations of the response functions. This work funded in part by the Naval Surface Warfare Center, Carderock Division In-house Laboratory Independent Research program.

Factors influencing the temporal growth rate of the high order TM{sub 0n} modes in the Ka-band overmoded Cherenkov oscillator

Energy Technology Data Exchange (ETDEWEB)

Wu, Dapeng, E-mail: vipbenjamin@163.com; Shu, Ting; Ju, Jinchuan [College of Photoelectric Science and Engineering, National University of Defense Technology, Changsha 410073 (China)

2015-06-15

When the wavelength of overmoded Cherenkov oscillator goes into Ka-band, power handling capacity becomes an essential issue. Using the TM{sub 02} mode or higher order TM{sub 0n} modes as the operating mode is a potential solution. This paper is aimed to find some proper parameters to make the temporal growth rate of the TM{sub 02} mode higher in our previously studied Gigawatt (GW)-class Ka band oscillator. An accurate and fast calculation method of the “hot” dispersion equation is derived for rectangular corrugated SWSs, which are widely used in the high frequency Cherenkov devices. Then, factors that affect the temporal growth rate of the high order TM{sub 0n} modes are analyzed, including the depth of corrugation, the radius of drift tube, and the diode voltage. Results show that, when parameters are chosen properly, the temporal growth rate of the TM{sub 02} mode can be as high as 0.3 ns{sup −1}.

Oxygen adsorption and incorporation at irradiated GaN(0001) and GaN(0001¯) surfaces: First-principles density-functional calculations

Science.gov (United States)

Sun, Qiang; Selloni, Annabella; Myers, T. H.; Doolittle, W. Alan

2006-11-01

Density functional theory calculations of oxygen adsorption and incorporation at the polar GaN(0001) and GaN(0001¯) surfaces have been carried out to explain the experimentally observed reduced oxygen concentration in GaN samples grown by molecular beam epitaxy in the presence of high energy (˜10keV) electron beam irradiation [Myers , J. Vac. Sci. Technol. B 18, 2295 (2000)]. Using a model in which the effect of the irradiation is to excite electrons from the valence to the conduction band, we find that both the energy cost of incorporating oxygen impurities in deeper layers and the oxygen adatom diffusion barriers are significantly reduced in the presence of the excitation. The latter effect leads to a higher probability for two O adatoms to recombine and desorb, and thus to a reduced oxygen concentration in the irradiated samples, consistent with experimental observations.

Fabrication of GaN epitaxial thin film on InGaZnO4 single-crystalline buffer layer

International Nuclear Information System (INIS)

Shinozaki, Tomomasa; Nomura, Kenji; Katase, Takayoshi; Kamiya, Toshio; Hirano, Masahiro; Hosono, Hideo

2010-01-01

Epitaxial (0001) films of GaN were grown on (111) YSZ substrates using single-crystalline InGaZnO 4 (sc-IGZO) lattice-matched buffer layers by molecular beam epitaxy with a NH 3 source. The epitaxial relationships are (0001) GaN //(0001) IGZO //(111) YSZ in out-of-plane and [112-bar 0] GaN //[112-bar 0] IGZO //[11-bar 0] YSZ in in-plane. This is different from those reported for GaN on many oxide crystals; the in-plane orientation of GaN crystal lattice is rotated by 30 o with respect to those of oxide substrates except for ZnO. Although these GaN films showed relatively large tilting and twisting angles, which would be due to the reaction between GaN and IGZO, the GaN films grown on the sc-IGZO buffer layers exhibited stronger band-edge photoluminescence than GaN grown on a low-temperature GaN buffer layer.

Performance Analysis of Ultra-Wideband Channel for Short-Range Monopulse Radar at Ka-Band

Directory of Open Access Journals (Sweden)

Naohiko Iwakiri

2012-01-01

Full Text Available High-range resolution is inherently provided with Ka-band ultra-wideband (UWB vehicular radars. The authors have developed a prototype UWB monopulse radar equipped with a two-element receiving antenna array and reported its measurement results. In this paper, a more detailed verification using these measurements is presented. The measurements were analyzed employing matched filtering and eigendecomposition, and then multipath components were extracted to examine the behavior of received UWB monopulse signals. Next, conventional direction finding algorithms based on narrowband assumption were evaluated using the extracted multipath components, resulting in acceptable angle-of-arrival (AOA from the UWB monopulse signal regardless of wideband signals. Performance degradation due to a number of averaging the received monopulses was also examined to design suitable radar's waveforms.

380 keV proton irradiation effects on photoluminescence of Eu-doped GaN

International Nuclear Information System (INIS)

Okada, Hiroshi; Nakanishi, Yasuo; Wakahara, Akihiro; Yoshida, Akira; Ohshima, Takeshi

2008-01-01

The effect of 380 keV proton irradiation on the photoluminescence (PL) properties has been investigated for undoped and Eu-doped GaN. As the proton irradiation exceeds 1x10 13 cm -2 , a drastic decrease of PL intensity of the near band-edge emission of undoped GaN was observed. On the other hand, for Eu-doped GaN, the PL emission corresponding to the 5 D 0 → 7 F 2 transition in Eu 3+ kept the initial PL intensity after the proton irradiation up to 1x10 14 cm -2 . Present results, together with our previous report on electron irradiation results, suggest that Eu-doped GaN is a strong candidate for light emitting devices in high irradiation environment

Wideband multi-element Er-doped fiber amplifier

International Nuclear Information System (INIS)

Thipparapu, N K; Jain, S; May-Smith, T C; Sahu, J K

2014-01-01

A multi-element Er-doped fiber amplifier (MEEDFA) is demonstrated in which the gain profile is extended into the S and L bands. Each fiber element of the MEEDFA is found to provide a maximum gain of 37 dB and a noise figure of < 4 dB in the C-band. The gain profile of the amplifier is shifted towards longer wavelength by cascading fiber elements. The novel geometry of the multi-element fiber (MEF) could allow for the development of a broadband amplifier in a split-band configuration. The proposed amplifier can operate in the wavelength band of 1520 to 1595 nm (75 nm), with a minimum gain of 20 dB. (letter)

Formation mechanism of Al-depleted bands in MOVPE-AlGaN layer on GaN template with trenches

Energy Technology Data Exchange (ETDEWEB)

Kuwano, Noriyuki [Art, Science and Technology Center for Cooperative Research, Kyushu University, Kasuga, Fukuoka 816-8580 (Japan); Department of Applied Science for Electronics and Materials, Kyushu University, Kasuga, Fukuoka 816-8580 (Japan); Ezaki, Tetsuya; Kurogi, Takuya [Department of Applied Science for Electronics and Materials, Kyushu University, Kasuga, Fukuoka 816-8580 (Japan); Miyake, Hideto; Hiramatsu, Kazumasa [Department of Electrical and Electronic Engineering, Mie University, Tsu, Mie 514-8507 (Japan)

2010-07-15

A microstructure in an AlGaN/GaN layer was analyzed in detail by means of transmission electron microscopy (TEM) and scanning electron microscopy (SEM) with special attention to the formation of steps on the surface. The AlGaN layer was grown by MOVPE on a GaN template with periodic trenches. It was revealed that there formed were Al-depleted bands in the AlGaN layer. These bands were generated from rather lower regions in the AlGaN layer or those above the trenches, and run upwards. Some of them reached the top surface to connect a macro step. The formation mechanism of the Al-depleted region is discussed in terms of thermodynamics. If the total bonding energy of atoms on the macro step of surface is assumed to be smaller than that of atoms on a flat surface, the Al-depletion can be explained provided that the local equilibrium in concentration is conserved during the growth of AlGaN layer. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Evolution of Monolithic Technology for Wireless Communications: GaN MMIC Power Amplifiers For Microwave Radios

Directory of Open Access Journals (Sweden)

Vittorio Camarchia

2014-09-01

Full Text Available This paper presents the progress of monolithic technology for microwaveapplication, focusing on gallium nitride technology advances in the realization of integratedpower amplifiers. Three design examples, developed for microwave backhaul radios, areshown. The first design is a 7 GHz Doherty developed with a research foundry, while thesecond and the third are a 7 GHz Doherty and a 7–15 GHz dual-band combined poweramplifiers, both based on a commercial foundry process. The employed architectures, themain design steps and the pros and cons of using gallium nitride technology are highlighted.The measured performance demonstrates the potentialities of the employed technology, andthe progress in the accuracy, reliability and performance of the process.

Exciton Emission from Bare and Alq3/Gold Coated GaN Nanorods

Science.gov (United States)

Mohammadi, Fatemesadat; Kuhnert, Gerd; Hommel, Detlef; Schmitzer, Heidrun; Wagner, Hans-Peter

We study the excitonic and impurity related emission in bare and aluminum quinoline (Alq3)/gold coated wurtzite GaN nanorods by temperature-dependent time-integrated (TI) and time-resolved (TR) photoluminescence (PL). The GaN nanorods were grown by molecular beam epitaxy. Alq3 as well as Alq3/gold covered nanorods were synthesized by organic molecular beam deposition. In the near-band edge region a donor-bound-exciton (D0X) emission is observed at 3.473 eV. Another emission band at 3.275 eV reveals LO-phonon replica and is attributed to a donor-acceptor-pair (DAP) luminescence. TR PL traces at 20 K show a nearly biexponential decay for the D0X with lifetimes of approximately 180 and 800 ps for both bare and Alq3 coated nanorods. In GaN nanorods which were coated with an Alq3 film and subsequently with a 10 nm thick gold layer we observe a PL quenching of D0X and DAP band and the lifetimes of the D0X transition shorten. The quenching behaviour is partially attributed to the energy-transfer from free excitons and donor-bound-excitons to plasmon oscillations in the gold layer.

Individual GaN nanowires exhibit strong piezoelectricity in 3D.

Science.gov (United States)

Minary-Jolandan, Majid; Bernal, Rodrigo A; Kuljanishvili, Irma; Parpoil, Victor; Espinosa, Horacio D

2012-02-08

Semiconductor GaN NWs are promising components in next generation nano- and optoelectronic systems. In addition to their direct band gap, they exhibit piezoelectricity, which renders them particularly attractive in energy harvesting applications for self-powered devices. Nanowires are often considered as one-dimensional nanostructures; however, the electromechanical coupling leads to a third rank tensor that for wurtzite crystals (GaN NWs) possesses three independent coefficients, d(33), d(13), and d(15). Therefore, the full piezoelectric characterization of individual GaN NWs requires application of electric fields in different directions and measurements of associated displacements on the order of several picometers. In this Letter, we present an experimental approach based on scanning probe microscopy to directly quantify the three-dimensional piezoelectric response of individual GaN NWs. Experimental results reveal that GaN NWs exhibit strong piezoelectricity in three dimensions, with up to six times the effect in bulk. Based on finite element modeling, this finding has major implication on the design of energy harvesting systems exhibiting unprecedented levels of power density production. The presented method is applicable to other piezoelectric NW materials as well as wires manufactured along different crystallographic orientations. © 2011 American Chemical Society

Heteroepitaxial growth of basal plane stacking fault free a-plane GaN

Energy Technology Data Exchange (ETDEWEB)

Wieneke, Matthias; Hempel, Thomas; Noltemeyer, Martin; Witte, Hartmut; Dadgar, Armin; Blaesing, Juergen; Christen, Juergen; Krost, Alois [Otto-von-Guericke Universitaet Magdeburg, FNW/IEP, Magdeburg (Germany)

2010-07-01

Growth of light emitting quantum-wells based on a-plane GaN is a possibility to reduce or even to avoid polarization correlated luminescence red shift and reduction of radiative recombination efficiency. But until now heteroepitaxially grown a-plane GaN films are characterized by a poor crystalline quality expressed by a high density of basal plane stacking faults (BSF) and partial dislocations. We present Si doped a-plane GaN films grown on r-plane sapphire substrates by metal organic vapor phase epitaxy using high temperature AlGaN nucleation layers. FE-SEM images revealed three dimensionally grown GaN crystallites sized up to tenth micrometer in the basal plane and a few tenth micrometers along the c-axes. Though, the full width at half maxima of the X-ray diffraction {omega}-scans of the in-plane GaN(1 anti 100) and GaN(0002) Bragg reflections exhibited a very high crystal quality. Furthermore, luminescence spectra were dominated by near band gap emission, while there was no separated peak of the basal plane stacking fault. In summary we present heteroepitaxially grown a-plane GaN without an evidence of basal plane stacking faults in X-ray diffraction measurements and luminescence spectra.

Characterization of plasma etching damage on p-type GaN using Schottky diodes

International Nuclear Information System (INIS)

Kato, M.; Mikamo, K.; Ichimura, M.; Kanechika, M.; Ishiguro, O.; Kachi, T.

2008-01-01

The plasma etching damage in p-type GaN has been characterized. From current-voltage and capacitance-voltage characteristics of Schottky diodes, it was revealed that inductively coupled plasma (ICP) etching causes an increase in series resistance of the Schottky diodes and compensation of acceptors in p-type GaN. We investigated deep levels near the valence band of p-type GaN using current deep level transient spectroscopy (DLTS), and no deep level originating from the ICP etching damage was observed. On the other hand, by capacitance DLTS measurements for n-type GaN, we observed an increase in concentration of a donor-type defect with an activation energy of 0.25 eV after the ICP etching. The origin of this defect would be due to nitrogen vacancies. We also observed this defect by photocapacitance measurements for ICP-etched p-type GaN. For both n- and p-type GaN, we found that the low bias power ICP etching is effective to reduce the concentration of this defect introduced by the high bias power ICP etching

Photo-assisted Kelvin probe force microscopy investigation of three dimensional GaN structures with various crystal facets, doping types, and wavelengths of illumination

Science.gov (United States)

Ali Deeb, Manal; Ledig, Johannes; Wei, Jiandong; Wang, Xue; Wehmann, Hergo-Heinrich; Waag, Andreas

2017-08-01

Three dimensional GaN structures with different crystal facets and doping types have been investigated employing the surface photo-voltage (SPV) method to monitor illumination-induced surface charge behavior using Kelvin probe force microscopy. Various photon energies near and below the GaN bandgap were used to modify the generation of electron-hole pairs and their motion under the influence of the electric field near the GaN surface. Fast and slow processes for Ga-polar c-planes on both Si-doped n-type as well as Mg-doped p-type GaN truncated pyramid micro-structures were found and their origin is discussed. The immediate positive (for n-type) and negative (for p-type) SPV response dominates at band-to-band and near-bandgap excitation, while only the slow process is present at sub-bandgap excitation. The SPV behavior for the semi-polar facets of the p-type GaN truncated pyramids has a similar characteristic to that on its c-plane, which indicates that it has a comparable band bending and no strong influence of the polarity-induced charges is detectable. The SPV behavior of the non-polar m-facets of the Si-doped n-type part of a transferred GaN column is similar to that of a clean c-plane GaN surface during illumination. However, the SPV is smaller in magnitude, which is attributed to intrinsic surface states of m-plane surfaces and their influence on the band bending. The SPV behavior of the non-polar m-facet of the slightly Mg-doped part of this GaN column is found to behave differently. Compared to c- and r-facets of p-type surfaces of GaN-light-emitting diode micro-structures, the m-plane is more chemically stable.

Validation of SARAL/AltiKa data in the Amazon basin

Science.gov (United States)

Santos da Silva, Joecila; Calmant, Stephane; Medeiros Moreira, Daniel; Oliveira, Robson; Conchy, Taina; Gennero, Marie-Claude; Seyler, Frederique

2015-04-01

SARAL/AltiKa is a link between past missions (since it flies on the ERS-ENVISAT orbit with Ku band nadir altimeters in LRM) and future missions such as SWOT's Ka band interferometry swaths. In the present study, we compare the capability of its altimeter AltiKa to that of previous missions working in the Ku band such as ENVISAT and Jason-2 in retrieving water levels over the Amazon basin. Same as for the aforementioned preceding missions, the best results were obtained with the ICE-1 retracking algorithm. We qualitatively analyze the impact of rainfalls in the loss of measurements. Since making long -multi mission- time series is of major importance either for hydro-climatic studies or for basin management, we also present an estimate of the altimeter bias in order that the SARAL series of water level can be appended to those of these previous missions.

Infrared reflectance of GaN films grown on Si(001) substrates

International Nuclear Information System (INIS)

Zhang, Xiong; Hou, Yong-Tian; Feng, Zhe-Chuan; Chen, Jin-Li

2001-01-01

GaN thin films on Si(001) substrates are studied by infrared reflectance (IRR) spectroscopy at room temperature (RT). Variations in the IRR spectral line shape with the microstructure of GaN/Si(011) film are quantitatively explained in terms of a three-component effective medium model. In this model, the nominally undoped GaN film is considered to consist of three elementary components, i.e., single crystalline GaN grains, pores (voids), and inter-granulated materials (amorphous GaN clusters). Such a polycrystalline nature of the GaN/Si(001) films was confirmed by scanning electron microscopy measurements. It was demonstrated that based on the proposed three-component effective medium model, excellent overall simulation of the RT-IRR spectra can be achieved, and the fine structures of the GaN reststrahlen band in the measured RT-IRR spectra can also be interpreted very well. Furthermore, the volume fraction for each component in the GaN/Si(001) film was accurately determined by fitting the experimental RT-IRR spectra with the theoretical simulation. These results indicate that IRR spectroscopy can offer a sensitive and convenient tool to probe the microstructure of GaN films grown on silicon. [copyright] 2001 American Institute of Physics

Enhanced Properties of Porous GaN Prepared by UV Assisted Electrochemical Etching

International Nuclear Information System (INIS)

Ainorkhilah Mahmood; Ainorkhilah Mahmood; Siang, C.L.

2011-01-01

The structural and optical properties of porous GaN films on sapphire (0001) prepared by UV assisted electrochemical etching were reported in this study. SEM micrographs indicated that the shapes of the pores for both porous samples are nearly hexagonal. XRD revealed that the broadening in spectrum is due to the small size crystallites. As compared to the as grown GaN films, porous layers exhibit a substantial photoluminescence (PL) intensity enhancement with red-shifted band-edge PL peaks associated with the relaxation of compressive stress. The shift of E2(high) to the lower frequency in Raman spectra of the porous GaN films further confirms such a stress relaxation. (author)

Modeling variability in dendritic ice crystal backscattering cross sections at millimeter wavelengths using a modified Rayleigh–Gans theory

International Nuclear Information System (INIS)

Lu, Yinghui; Clothiaux, Eugene E.; Aydin, Kültegin; Botta, Giovanni; Verlinde, Johannes

2013-01-01

Using the Generalized Multi-particle Mie-method (GMM), Botta et al. (in this issue) [7] created a database of backscattering cross sections for 412 different ice crystal dendrites at X-, Ka- and W-band wavelengths for different incident angles. The Rayleigh–Gans theory, which accounts for interference effects but ignores interactions between different parts of an ice crystal, explains much, but not all, of the variability in the database of backscattering cross sections. Differences between it and the GMM range from −3.5 dB to +2.5 dB and are highly dependent on the incident angle. To explain the residual variability a physically intuitive iterative method was developed to estimate the internal electric field within an ice crystal that accounts for interactions between the neighboring regions within it. After modifying the Rayleigh–Gans theory using this estimated internal electric field, the difference between the estimated backscattering cross sections and those from the GMM method decreased to within 0.5 dB for most of the ice crystals. The largest percentage differences occur when the form factor from the Rayleigh–Gans theory is close to zero. Both interference effects and neighbor interactions are sensitive to the morphology of ice crystals. Improvements in ice-microphysical models are necessary to predict or diagnose internal structures within ice crystals to aid in more accurate interpretation of radar returns. Observations of the morphology of ice crystals are, in turn, necessary to guide the development of such ice-microphysical models and to better understand the statistical properties of ice crystal morphologies in different environmental conditions. -- Highlights: • Significant variability exists in radar backscattering cross sections of dendrites. • Source of variability depends upon detailed distribution of mass within dendrites. • The Rayleigh–Gans theory (RG) captures most of the variability. • Improving RG by estimating dendrite

A Rapid Method for Deposition of Sn-Doped GaN Thin Films on Glass and Polyethylene Terephthalate Substrates

Science.gov (United States)

Pat, Suat; Özen, Soner; Korkmaz, Şadan

2018-01-01

We report the influence of Sn doping on microstructure, surface, and optical properties of GaN thin films deposited on glass and polyethylene terephthalate (PET) substrate. Sn-doped GaN thin films have been deposited by thermionic vacuum arc (TVA) at low temperature. TVA is a rapid deposition technology for thin film growth. Surface and optical properties of the thin films were presented. Grain size, height distribution, roughness values were determined. Grain sizes were calculated as 20 nm and 13 nm for glass and PET substrates, respectively. Nano crystalline forms were shown by field emission scanning electron microscopy. Optical band gap values were determined by optical methods and photoluminescence measurement. The optical band gap values of Sn doped GaN on glass and PET were determined to be approximately ˜3.40 eV and ˜3.47 eV, respectively. As a result, TVA is a rapid and low temperature deposition technology for the Sn doped GaN deposited on glass and PET substrate.

Epitaxial Single-Layer MoS2 on GaN with Enhanced Valley Helicity

KAUST Repository

Wan, Yi

2017-12-19

Engineering the substrate of 2D transition metal dichalcogenides can couple the quasiparticle interaction between the 2D material and substrate, providing an additional route to realize conceptual quantum phenomena and novel device functionalities, such as realization of a 12-time increased valley spitting in single-layer WSe2 through the interfacial magnetic exchange field from a ferromagnetic EuS substrate, and band-to-band tunnel field-effect transistors with a subthreshold swing below 60 mV dec−1 at room temperature based on bilayer n-MoS2 and heavily doped p-germanium, etc. Here, it is demonstrated that epitaxially grown single-layer MoS2 on a lattice-matched GaN substrate, possessing a type-I band alignment, exhibits strong substrate-induced interactions. The phonons in GaN quickly dissipate the energy of photogenerated carriers through electron–phonon interaction, resulting in a short exciton lifetime in the MoS2/GaN heterostructure. This interaction enables an enhanced valley helicity at room temperature (0.33 ± 0.05) observed in both steady-state and time-resolved circularly polarized photoluminescence measurements. The findings highlight the importance of substrate engineering for modulating the intrinsic valley carriers in ultrathin 2D materials and potentially open new paths for valleytronics and valley-optoelectronic device applications.

Epitaxial Single-Layer MoS2 on GaN with Enhanced Valley Helicity

KAUST Repository

Wan, Yi; Xiao, Jun; Li, Jingzhen; Fang, Xin; Zhang, Kun; Fu, Lei; Li, Pan; Song, Zhigang; Zhang, Hui; Wang, Yilun; Zhao, Mervin; Lu, Jing; Tang, Ning; Ran, Guangzhao; Zhang, Xiang; Ye, Yu; Dai, Lun

2017-01-01

Engineering the substrate of 2D transition metal dichalcogenides can couple the quasiparticle interaction between the 2D material and substrate, providing an additional route to realize conceptual quantum phenomena and novel device functionalities, such as realization of a 12-time increased valley spitting in single-layer WSe2 through the interfacial magnetic exchange field from a ferromagnetic EuS substrate, and band-to-band tunnel field-effect transistors with a subthreshold swing below 60 mV dec−1 at room temperature based on bilayer n-MoS2 and heavily doped p-germanium, etc. Here, it is demonstrated that epitaxially grown single-layer MoS2 on a lattice-matched GaN substrate, possessing a type-I band alignment, exhibits strong substrate-induced interactions. The phonons in GaN quickly dissipate the energy of photogenerated carriers through electron–phonon interaction, resulting in a short exciton lifetime in the MoS2/GaN heterostructure. This interaction enables an enhanced valley helicity at room temperature (0.33 ± 0.05) observed in both steady-state and time-resolved circularly polarized photoluminescence measurements. The findings highlight the importance of substrate engineering for modulating the intrinsic valley carriers in ultrathin 2D materials and potentially open new paths for valleytronics and valley-optoelectronic device applications.

Electronic structure analysis of GaN films grown on r- and a-plane sapphire

Energy Technology Data Exchange (ETDEWEB)

Mishra, Monu; Krishna TC, Shibin; Aggarwal, Neha [Physics of Energy Harvesting Division, CSIR-National Physical Laboratory (CSIR-NPL), Dr. K.S. Krishnan Marg, New Delhi 110012 (India); Academy of Scientific and Innovative Research (AcSIR), CSIR-NPL Campus, Dr. K.S. Krishnan Marg, New Delhi 110012 (India); Vihari, Saket [Physics of Energy Harvesting Division, CSIR-National Physical Laboratory (CSIR-NPL), Dr. K.S. Krishnan Marg, New Delhi 110012 (India); Gupta, Govind, E-mail: govind@nplindia.org [Physics of Energy Harvesting Division, CSIR-National Physical Laboratory (CSIR-NPL), Dr. K.S. Krishnan Marg, New Delhi 110012 (India); Academy of Scientific and Innovative Research (AcSIR), CSIR-NPL Campus, Dr. K.S. Krishnan Marg, New Delhi 110012 (India)

2015-10-05

Graphical abstract: Substrate orientation induced changes in surface chemistry, band bending, hybridization states, electronic properties and surface morphology of epitaxially grown GaN were investigated via photoemission spectroscopic and Atomic Force Microscopic measurements. - Highlights: • Electronic structure and surface properties of GaN film grown on r/a-plane sapphire. • Downward band bending (0.5 eV) and high surface oxide is observed for GaN/a-sapphire. • Electron affinity and ionization energy is found to be higher for GaN/a-sapphire. - Abstract: The electronic structure and surface properties of epitaxial GaN films grown on r- and a-plane sapphire substrates were probed via spectroscopic and microscopic measurements. X-ray photoemission spectroscopic (XPS) measurements were performed to analyse the surface chemistry, band bending and valence band hybridization states. It was observed that GaN/a-sapphire display a downward band bending of 0.5 eV and possess higher amount of surface oxide compared to GaN/r-sapphire. The valence band (VB) investigation revealed that the hybridization corresponds to the interactions of Ga 4s and Ga 4p orbitals with N 2p orbital, and result in N2p–Ga4p, N2p–Ga4s{sup ∗}, mixed and N2p–Ga4s states. The energy band structure and electronic properties were measured via ultraviolet photoemission spectroscopic (UPS) experiments. The band structure analysis and electronic properties calculations divulged that the electron affinity and ionization energy of GaN/a-sapphire were 0.3 eV higher than GaN/r-sapphire film. Atomic Force Microscopic (AFM) measurements revealed faceted morphology of GaN/r-sapphire while a smooth pitted surface was observed for GaN/a-sapphire film, which is closely related to surface oxide coverage.

Structural effects of field emission from GaN nanofilms on SiC substrates

Energy Technology Data Exchange (ETDEWEB)

Chen, Cheng-Cheng; Wang, Ru-Zhi, E-mail: wrz@bjut.edu.cn; Zhu, Man-Kang; Yan, Hui [College of Materials Science and Engineering, Beijing University of Technology, 100 Pingleyuan, Chaoyang District, Beijing 100124 (China); Liu, Peng [Department of Physics Tsinghua University, Tsinghua-Foxconn Nanotechnology Research Center, Beijing 100084 (China); Wang, Bi-Ben [College of Chemistry and Chemical Engineering, Chongqing University of Technology, Chongqing 400054 (China)

2014-04-21

GaN nanofilms (NFs) with different structures are grown on SiC substrates by pulsed laser deposition under different conditions. The synthesized GaN NFs are studied by X-ray diffraction, field-emission (FE) scanning electron microscopy, X-ray photoelectron spectroscopy, and atomic force microscopy. The GaN NFs are composed of diversified GaN nanoparticles with a diameter of 9–38 nm, thickness of 10–50 nm, and roughness of 0.22–13.03 nm. FE from the GaN NFs is structure dependent, which is explained by stress changing the band gap of the NFs. By structure modulation, the turn-on field of GaN NFs can be as low as 0.66 V/μm at a current density of 1 μA/cm{sup 2}, with a current density of up to 1.1 mA/cm{sup 2} at a field of 4.18 V/μm. Fowler-Nordheim curves of some samples contain multiple straight lines, which originate from the structural change and diversification of GaN nanoparticles under an applied field. Overall, our results suggest that GaN NFs with excellent FE properties can be prepared on SiC substrates, which provides a new route to fabricate high-efficiency FE nanodevices.

Technology Development for 3-D Wide Swath Imaging Supporting ACE

Science.gov (United States)

Racette, Paul; Heymsfield, Gerry; Li, Lihua; Mclinden, Matthew; Park, Richard; Cooley, Michael; Stenger, Pete; Hand, Thomas

2014-01-01

detail specific requirements and trades for the Ka-band AESA line feed. As part of the third objective a subscale antenna, similar to the full-scale aperture design, was developed, integrated, and flown with the Cloud Radar System during the 2014 Integrated Precipitation and Hydrology Experiment. The fourth and ongoing objective entails developing a GaN MMIC (Gallium Nitride Monolithic Microwave Integrated Circuits) power amplifier for use in the Ka-band AESA. An overview of the progress made on this project and a look ahead at the 2013 IIP (Instrument Incubator Program) award selection will be presented.

F-band, High-Efficiency GaN Power Amplifier for the Scanning Microwave Limb Sounder and SOFIA, Phase II

Data.gov (United States)

National Aeronautics and Space Administration — QuinStar Technology proposes to develop a high-efficiency, 4-W SSPA operating at F-band frequencies (106-114 GHz). This will be achieved by employing two major...

Conduction band offset at the InN/GaN heterojunction

International Nuclear Information System (INIS)

Wang Kejia; Lian Chuanxin; Su Ning; Jena, Debdeep; Timler, John

2007-01-01

The conduction-band offset between GaN and InN is experimentally determined. InN/n-type GaN isotype heterojunctions grown by molecular beam epitaxy are observed to exhibit Schottky-junction like behavior based on rectifying vertical current flow. From capacitance-voltage measurements on the heterojunction, the Schottky barrier height is found to be ∼0.94 eV. The photocurrent spectroscopy measurement by backside illumination reveals an energy barrier height of 0.95 eV across the heterojunction, consistent with the capacitance measurement. By combining electrical transport, capacitance-voltage, and photocurrent spectroscopy measurement results, the conduction band offset between InN and GaN is estimated to be ΔE C =1.68±0.1 eV

Bulk GaN Schottky Diodes for Millimeter Wave Frequency Multipliers, Phase II

Data.gov (United States)

National Aeronautics and Space Administration — Within the context of this project, White Light Power Inc. (WLPI) will demonstrate prototype vertical GaN Schottky diodes for high-power rectification at W-band. To...

Broadband 0.25-um Gallium Nitride (GaN) Power Amplifier Designs

Science.gov (United States)

2017-08-14

networking, and sensor systems of interest to Department of Defense applications, particularly for next-generation radar systems. Broadband, efficient, high...simulations of MMIC (3–6 GHz, 28 V/180 mA) 1.75-mm HEMT power amplifier ............................................... 13 Fig. 20 Simple schematic...design simple , a single 1.75-mm high-electron-mobility transistor (HEMT) was used for a preliminary ideal design of the broadband power amplifier

MOCVD growth of GaN layer on InN interlayer and relaxation of residual strain

Energy Technology Data Exchange (ETDEWEB)

Lee, Keon-Hun; Park, Sung Hyun; Kim, Jong Hack; Kim, Nam Hyuk; Kim, Min Hwa [Department of Materials Science and Engineering, Seoul National University, Seoul, 151-742 (Korea, Republic of); Na, Hyunseok [Department of Advanced Materials Science and Engineering, Daejin University, Pocheon, 487-711 (Korea, Republic of); Yoon, Euijoon, E-mail: eyoon@snu.ac.k [Department of Materials Science and Engineering, Seoul National University, Seoul, 151-742 (Korea, Republic of); Department of Nano Science and Technology, Graduate School of Convergence Science and Technology, Seoul National University, Suwon 433-270 (Korea, Republic of)

2010-09-01

100 nm InN layer was grown on sapphire c-plane using a metal-organic chemical vapor deposition (MOCVD) system. Low temperature (LT) GaN layer was grown on InN layer to protect InN layer from direct exposure to hydrogen flow during high temperature (HT) GaN growth and/or abrupt decomposition. Subsequently, thick HT GaN layer (2.5 {mu}m thick) was grown at 1000 {sup o}C on LT GaN/InN/sapphire template. Microstructure of epilayer-substrate interface was investigated by transmission electron microscopy (TEM). From the high angle annular dark field TEM image, the growth of columnar structured LT GaN and HT GaN with good crystallinity was observed. Though thickness of InN interlayer is assumed to be about 100 nm based on growth rate, it was not clearly shown in TEM image due to the InN decomposition. The lattice parameters of GaN layers were measured by XRD measurement, which shows that InN interlayer reduces the compressive strain in GaN layer. The relaxation of compressive strain in GaN layer was also confirmed by photoluminescence (PL) measurement. As shown in the PL spectra, red shift of GaN band edge peak was observed, which indicates the reduction of compressive strain in GaN epilayer.

W-band power amplifier MMIC with 400 mW output power in 0.1 μm AlGaN/GaN technology

NARCIS (Netherlands)

Heijningen,M. van; Rodenburg, M.; Vliet, F.E. van; Massler, M.; Tessmann, A.; Brückner, F.; Müller, S.; Schwantuschke, D.; Quay; Narhi, T.

2012-01-01

The 0.1 μm AlGaN/GaN technology and design of two W-band power amplifiers in this technology are described. The dual-stage amplifier reaches an output power of 400 mW at 90 GHz at an operation bias of 20 V. Two designs with different driver to final stage gate width ratio are discussed. More than 10

Efficiency Enhancement of Pico-cell Base Station Power Amplifier MMIC in Gallium Nitride HFET Technology Using the Doherty technique

Science.gov (United States)

Seneviratne, Sashieka

With the growth of smart phones, the demand for more broadband, data centric technologies are being driven higher. As mobile operators worldwide plan and deploy 4th generation (4G) networks such as LTE to support the relentless growth in mobile data demand, the need for strategically positioned pico-sized cellular base stations known as 'pico-cells' are gaining traction. In addition to having to design a transceiver in a much compact footprint, pico-cells must still face the technical challenges presented by the new 4G systems, such as reduced power consumptions and linear amplification of the signals. The RF power amplifier (PA) that amplifies the output signals of 4G pico-cell systems face challenges to minimize size, achieve high average efficiencies and broader bandwidths while maintaining linearity and operating at higher frequencies. 4G standards as LTE use non-constant envelope modulation techniques with high peak to average ratios. Power amplifiers implemented in such applications are forced to operate at a backed off region from saturation. Therefore, in order to reduce power consumption, a design of a high efficiency PA that can maintain the efficiency for a wider range of radio frequency signals is required. The primary focus of this thesis is to enhance the efficiency of a compact RF amplifier suitable for a 4G pico-cell base station. For this aim, an integrated two way Doherty amplifier design in a compact 10mm x 11.5mm2 monolithic microwave integrated circuit using GaN device technology is presented. Using non-linear GaN HFETs models, the design achieves high effi-ciencies of over 50% at both back-off and peak power regions without compromising on the stringent linearity requirements of 4G LTE standards. This demonstrates a 17% increase in power added efficiency at 6 dB back off from peak power compared to conventional Class AB amplifier performance. Performance optimization techniques to select between high efficiency and high linearity operation are

A New Ka-Band Scanning Radar Facility: Polarimetric and Doppler Spectra Measurements of Snow Events

Science.gov (United States)

Oue, M.; Kollias, P.; Luke, E. P.; Mead, J.

2017-12-01

Polarimetric radar analyses offer the capability of identification of ice hydrometeor species as well as their spatial distributions. In addition to polarimetric parameter observations, Doppler spectra measurements offer unique insights into ice particle properties according to particle fall velocities. In particular, millimeter-wavelength radar Doppler spectra can reveal supercooled liquid cloud droplets embedded in ice precipitation clouds. A Ka-band scanning polarimetric radar, named KASPR, was installed in an observation facility at Stony Brook University, located 22 km west of the KOKX NEXRAD radar at Upton, NY. The KASPR can measure Doppler spectra and full polarimetric variables, including radar reflectivity, differential reflectivity (ZDR), differential phase (φDP), specific differential phase (KDP), correlation coefficient (ρhv), and linear depolarization ratio (LDR). The facility also includes a micro-rain radar and a microwave radiometer capable of measuring reflectivity profiles and integrated liquid water path, respectively. The instruments collected initial datasets during two snowstorm events and two snow shower events in March 2017. The radar scan strategy was a combination of PPI scans at 4 elevation angles (10, 20, 45, and 60°) and RHI scans in polarimetry mode, and zenith pointing with Doppler spectra collection. During the snowstorm events the radar observed relatively larger ZDR (1-1.5 dB) and enhanced KDP (1-2 ° km-1) at heights corresponding to a plate/dendrite crystal growth regime. The Doppler spectra showed that slower-falling particles ( 1 m s-1). The weakly increased ZDR could be produced by large, faster falling particles such as quasi-spherical aggregates, while the enhanced KDP could be produced by highly-oriented oblate, slowly-falling particles. Below 2 km altitude, measurements of dual wavelength ratio (DWR) based on Ka and S-band reflectivities from the KASPR and NEXRAD radars were available. Larger DWR (>10 dB) suggested

Doping of GaN by ion implantation: Does It Work?

International Nuclear Information System (INIS)

Suvkhanov, A.; Wu, W.; Price, K.; Parikh, N.; Irene, E.; Hunn, J.; Thomson, D.; Davis, R.F.; Krasnobaev, L.

1998-04-01

Epitaxially grown GaN by metal organic chemical vapor deposition (MOCVD) on SiC were implanted with 100 keV Si + (for n-type) and 80 keV Mg + (for p-type) with various fluences from 1 x 10 12 to 7 x 10 15 ions/cm 2 at liquid nitrogen temperature (LT), room temperature (RT), and 700 C (HT). High temperature (1,200 C and 1,500 C) annealing was carried out after capping the GaN with epitaxial AlN by MOCVD to study damage recovery. Samples were capped by a layer of AlN in order to protect the GaN surface during annealing. Effects of implant temperature, damage and dopant activation are critically studied to evaluate a role of ion implantation in doping of GaN. The damage was studied by Rutherford Backscattering/Channeling, spectroscopic ellipsometry and photoluminescence. Results show dependence of radiation damage level on temperature of the substrate during implantation: implantations at elevated temperatures up to 550 C decrease the lattice disorder; hot implants above 550 C can not be useful in doping of GaN due to nitrogen loss from the surface. SE measurements have indicated very high sensitivity to the implantation damage. PL measurements at LT of 80 keV Mg + (5 x 10 14 cm 2 ) implanted and annealed GaN showed two peaks: one ∼ 100 meV and another ∼ 140 meV away from the band edge

Dual-Polarized Antenna Arrays with CMOS Power Amplifiers for SiP Integration at W-Band

Science.gov (United States)

Giese, Malte; Vehring, Sönke; Böck, Georg; Jacob, Arne F.

2017-09-01

This paper presents requirements and front-end solutions for low-cost communication systems with data rates of 100 Gbit/s. Link budget analyses in different mass-market applications are conducted for that purpose. It proposes an implementation of the front-end as an active antenna array with support for beam steering and polarization multiplexing over the full W-band. The critical system components are investigated and presented. This applies to a transformer coupled power amplifier (PA) in 40 nm bulk CMOS. It shows saturated output power of more than 10 dBm and power-added-efficiency of more than 10 % over the full W-band. Furthermore, the performance of microstrip-to-waveguide transitions is shown exemplarily as an important part of the active antenna as it interfaces active circuitry and antenna in a polymer-and-metal process. The transition test design shows less than 0.9 dB insertion loss and more than 12 dB return loss for the differential transition over the full W-band.

Probing defect states in polycrystalline GaN grown on Si(111) by sub-bandgap laser-excited scanning tunneling spectroscopy

Science.gov (United States)

Hsiao, F.-M.; Schnedler, M.; Portz, V.; Huang, Y.-C.; Huang, B.-C.; Shih, M.-C.; Chang, C.-W.; Tu, L.-W.; Eisele, H.; Dunin-Borkowski, R. E.; Ebert, Ph.; Chiu, Y.-P.

2017-01-01

We demonstrate the potential of sub-bandgap laser-excited cross-sectional scanning tunneling microscopy and spectroscopy to investigate the presence of defect states in semiconductors. The characterization method is illustrated on GaN layers grown on Si(111) substrates without intentional buffer layers. According to high-resolution transmission electron microscopy and cathodoluminescence spectroscopy, the GaN layers consist of nanoscale wurtzite and zincblende crystallites with varying crystal orientations and hence contain high defect state densities. In order to discriminate between band-to-band excitation and defect state excitations, we use sub-bandgap laser excitation. We probe a clear increase in the tunnel current at positive sample voltages during sub-bandgap laser illumination for the GaN layer with high defect density, but no effect is found for high quality GaN epitaxial layers. This demonstrates the excitation of free charge carriers at defect states. Thus, sub-bandgap laser-excited scanning tunneling spectroscopy is a powerful complimentary characterization tool for defect states.

Stacking and electric field effects in atomically thin layers of GaN

International Nuclear Information System (INIS)

Xu, Dongwei; He, Haiying; Pandey, Ravindra; Karna, Shashi P

2013-01-01

Atomically thin layers of nitrides are a subject of interest due to their novel applications. In this paper, we focus on GaN multilayers, investigating their stability and the effects of stacking and electric fields on their electronic properties in the framework of density functional theory. Both bilayers and trilayers prefer a planar configuration rather than a buckled bulk-like configuration. The application of an external perpendicular electric field induces distinct stacking-dependent features in the electronic properties of nitride multilayers: the band gap of a monolayer does not change whereas that of a trilayer is significantly reduced. Such a stacking-dependent tunability of the band gap in the presence of an applied field suggests that multilayer GaN is a good candidate material for next generation devices at the nanoscale. (paper)

P-type doping of GaN(000\\bar{1}) by magnesium ion implantation

Science.gov (United States)

Narita, Tetsuo; Kachi, Tetsu; Kataoka, Keita; Uesugi, Tsutomu

2017-01-01

Magnesium ion implantation has been performed on a GaN(000\\bar{1}) substrate, whose surface has a high thermal stability, thus allowing postimplantation annealing without the use of a protective layer. The current-voltage characteristics of p-n diodes fabricated on GaN(000\\bar{1}) showed distinct rectification at a turn-on voltage of about 3 V, although the leakage current varied widely among the diodes. Coimplantation with magnesium and hydrogen ions effectively suppressed the leakage currents and device-to-device variations. In addition, an electroluminescence band was observed at wavelengths shorter than 450 nm for these diodes. These results provide strong evidence that implanted magnesium ions create acceptors in GaN(000\\bar{1}).

Study of using aqueous NH{sub 3} to synthesize GaN nanowires on Si(1 1 1) by thermal chemical vapor deposition

Energy Technology Data Exchange (ETDEWEB)

Saron, K.M.A., E-mail: kamalmohammedabdalla@yahoo.com [Nano-Optoelectronics Research and Technology Laboratory, School of Physics, University Sains Malaysia, Penang 11800 (Malaysia); Hashim, M.R. [Nano-Optoelectronics Research and Technology Laboratory, School of Physics, University Sains Malaysia, Penang 11800 (Malaysia)

2013-03-20

Highlights: ► This study presents a facile, low cost and safe method to synthesize high quality GaN NWs, by using NH{sub 3} solution as N source. ► Moderating the N{sub 2} flow rate improved the crystalline quality of the NWs and also produced zigzag shaped NWs. ► Raman spectra showed that the synthesized GaN NWs had hexagonal wurtzite structures as a result of increased tensile stress. ► By moderating N{sub 2} flow, strong NBE emission peaks at about 364 nm and YB is subsided. -- Abstract: High-quality GaN nanowires (NWs) and zigzag-shaped NWs were grown on catalyst-free Si(1 1 1) substrate by thermal chemical vapor deposition (TCVD). Gallium (Ga) metal and aqueous NH{sub 3} solution are used as a source of materials. Ga vapor was directly reacts with gaseous NH{sub 3} under controlled nitrogen flow at 1050 °C. Scanning electron microscopy (SEM) images showed that the morphology of GaN displayed various densities of NWs and zigzag NWs depending on the gas flow rate, and increased nitrogen flow rate caused density reduction. The GaN NWs exhibited clear X-ray diffraction analysis (XRD) peaks that corresponded to GaN with hexagonal wurtzite structures. The photoluminescence spectra showed that the ultraviolet band emission of GaN NWs had a strong near band-edge emission (NBE) at 361–367 nm. Yellow band emissions were observed at low and high flow rates due to nitrogen and Ga vacancies, respectively. Moderate N{sub 2} flow resulted in a strong NBE emission and a high optical quality of the NWs. This study shows the possibility of low-cost synthesis of GaN nanostructures on Si wafers using aqueous NH{sub 3} solution.

Electronic structure and optical properties of Al and Mg co-doped GaN

International Nuclear Information System (INIS)

Ji Yan-Jun; Du Yu-Jie; Wang Mei-Shan

2013-01-01

The electronic structure and optical properties of Al and Mg co-doped GaN are calculated from first principles using density function theory with the plane-wave ultrasoft pseudopotential method. The results show that the optimal form of p-type GaN is obtained with an appropriate Al:Mg co-doping ratio rather than with only Mg doping. Al doping weakens the interaction between Ga and N, resulting in the Ga 4s states moving to a high energy region and the system band gap widening. The optical properties of the co-doped system are calculated and compared with those of undoped GaN. The dielectric function of the co-doped system is anisotropic in the low energy region. The static refractive index and reflectivity increase, and absorption coefficient decreases. This provides the theoretical foundation for the design and application of Al—Mg co-doped GaN photoelectric materials

Comparison of AltiKa and CryoSat-2 Elevation and Elevation Rates over the Amundsen Sea Sector

Science.gov (United States)

Otosaka, I.; Shepherd, A.; Hogg, A.

2017-12-01

Altimeters have been successfully used for more than two decades to observe changes in the ice sheet surface and to estimate the contribution of ice sheets to sea level rise. The Satellite for Argos and AltiKa (SARAL) was launched in February 2013 as a joint mission between the French space agency (CNES) and the Indian Space Research Organisation (ISRO). While the altimeters previously launched into space are operating at Ku-band (13.6 GHz), the altimeter on board SARAL, AltiKa, is the first instrument to operate at Ka-band (36.8 GHz). The higher frequency of AltiKa is expected to lead to reduced penetration of the radar signal into the snowpack, compared to Ku-band. A comparison of ice sheet elevation measurements recorded at the two frequencies may therefore provide useful information on surface and its scattering properties. In this study, we compare elevation and elevation rates recorded by AltiKa and CryoSat-2 between March 2013 and April 2017 over the Amundsen Sea Sector (ASS), one of the most rapidly changing sectors of West Antarctica. Elevation and elevation rates are computed within 5 km grid cells using a plane fit method, taking into account the contributions of topography and fluctuations in elevation and backscatter. The drifting orbit and imaging modes of CryoSat-2 result in 78,7 % sampling of the study area, whereas AltiKa samples 39,7 % due to its sparser orbit pattern and due to loss of signal in steeply sloping coastal margins. Over the study period, the root mean square difference between elevation and elevation change recorded at Ka-band and Ku-band were 40.3 m and 0.54 m/yr, respectively. While the broad spatial pattern of elevation change is well resolved by both satellites, data gaps along the Getz coastline may be partly responsible for the lower elevation change rate observed at Ka-band. We also compared CryoSat-2 and AltiKa to coincident airborne data from NASA's Operation IceBridge (OIB). The mean difference of elevation rate between

Electron beam and optical depth profiling of quasibulk GaN

International Nuclear Information System (INIS)

Chernyak, L.; Osinsky, A.; Nootz, G.; Schulte, A.; Jasinski, J.; Benamara, M.; Liliental-Weber, Z.; Look, D. C.; Molnar, R. J.

2000-01-01

Electron beam and optical depth profiling of thick (5.5--64 μm) quasibulk n-type GaN samples, grown by hydride vapor-phase epitaxy, were carried out using electron beam induced current (EBIC), microphotoluminescence (PL), and transmission electron microscopy (TEM). The minority carrier diffusion length, L, was found to increase linearly from 0.25 μm, at a distance of about 5 μm from the GaN/sapphire interface, to 0.63 μm at the GaN surface, for a 36-μm-thick sample. The increase in L was accompanied by a corresponding increase in PL band-to-band radiative transition intensity as a function of distance from the GaN/sapphire interface. We attribute the latter changes in PL intensity and minority carrier diffusion length to a reduced carrier mobility and lifetime at the interface, due to scattering at threading dislocations. The results of EBIC and PL measurements are in good agreement with the values for dislocation density obtained using TEM

Fabrication of p-type porous GaN on silicon and epitaxial GaN

OpenAIRE

Bilousov, Oleksandr V.; Geaney, Hugh; Carvajal, Joan J.; Zubialevich, Vitaly Z.; Parbrook, Peter J.; Giguere, A.; Drouin, D.; Diaz, Francesc; Aguilo, Magdalena; O'Dwyer, Colm

2013-01-01

Porous GaN layers are grown on silicon from gold or platinum catalyst seed layers, and self-catalyzed on epitaxial GaN films on sapphire. Using a Mg-based precursor, we demonstrate p-type doping of the porous GaN. Electrical measurements for p-type GaN on Si show Ohmic and Schottky behavior from gold and platinum seeded GaN, respectively. Ohmicity is attributed to the formation of a Ga2Au intermetallic. Porous p-type GaN was also achieved on epitaxial n-GaN on sapphire, and transport measurem...

Basic Equations for the Modeling of Gallium Nitride (gan) High Electron Mobility Transistors (hemts)

Science.gov (United States)

Freeman, Jon C.

2003-01-01

Gallium nitride (GaN) is a most promising wide band-gap semiconductor for use in high-power microwave devices. It has functioned at 320 C, and higher values are well within theoretical limits. By combining four devices, 20 W has been developed at X-band. GaN High Electron Mobility Transistors (HEMTs) are unique in that the two-dimensional electron gas (2DEG) is supported not by intentional doping, but instead by polarization charge developed at the interface between the bulk GaN region and the AlGaN epitaxial layer. The polarization charge is composed of two parts: spontaneous and piezoelectric. This behavior is unlike other semiconductors, and for that reason, no commercially available modeling software exists. The theme of this document is to develop a self-consistent approach to developing the pertinent equations to be solved. A Space Act Agreement, "Effects in AlGaN/GaN HEMT Semiconductors" with Silvaco Data Systems to implement this approach into their existing software for III-V semiconductors, is in place (summer of 2002).

Calibration of the KA Band Tracking of the Bepi-Colombo Spacecraft (more Experiment)

Science.gov (United States)

Barriot, J.; Serafini, J.; Sichoix, L.

2013-12-01

The radiosciences Bepi-Colombo MORE experiment will use X/X, X/Ka and Ka/Ka band radio links to make accurate measurements of the spacecraft range and range rate. Tropospheric zenith wet delays range from 1.5 cm to 10 cm, with high variability (less than 1000 s) and will impair these accurate measurements. Conditions vary from summer (worse) to winter (better), from day (worse) to night (better). These wet delays cannot be estimated from ground weather measurements and alternative calibration methods should be used in order to cope with the MORE requirements (no more than 3 mm at 1000 s). Due to the Mercury orbit, MORE measurements will be performed by daylight and more frequently in summer than in winter (from Northern hemisphere). Two systems have been considered to calibrate this wet delay: Water Vapor Radiometers (WVRs) and GPS receivers. The Jet Propulsion Laboratory has developed a new class of WVRs reaching a 5 percent accuracy for the wet delay calibration (0.75 mm to 5 mm), but these WVRs are expensive to build and operate. GPS receivers are also routinely used for the calibration of data from NASA Deep Space probes, but several studies have shown that GPS receivers can give good calibration (through wet delay mapping functions) for long time variations, but are not accurate enough for short time variations (100 to 1000 s), and that WVRs must be used to efficiently calibrate the wet troposphere delays over such time spans. We think that such a calibration could be done by assimilating data from all the GNSS constellations (GPS, GLONASS, Galileo, Beidou and IRNSS) that will be available at the time of the Bepi-Colombo arrival at Mercury (2021), provided that the underlying physics of the turbulent atmosphere and evapotranspiration processes are properly taken into account at such time scales. This implies to do a tomographic image of the troposphere overlying each Deep Space tracking station at time scales of less than 1000 s. For this purpose, we have

Nature of the fundamental band gap in GaNxP1-x alloys

International Nuclear Information System (INIS)

Shan, W.; Walukiewicz, W.; Yu, K. M.; Wu, J.; Ager, J. W. III; Haller, E. E.; Xin, H. P.; Tu, C. W.

2000-01-01

The optical properties of GaN x P 1-x alloys (0.007≤x≤0.031) grown by gas-source molecular-beam epitaxy have been studied. An absorption edge appears in GaN x P 1-x at energy below the indirect Γ V -X C transition in GaP, and the absorption edge shifts to lower energy with increasing N concentration. Strong photomodulation signals associated with the absorption edges in GaN x P 1-x indicate that a direct fundamental optical transition is taking place, revealing that the fundamental band gap has changed from indirect to direct. This N-induced transformation from indirect to direct band gap is explained in terms of an interaction between the highly localized nitrogen states and the extended states at the Γ conduction-band minimum. (c) 2000 American Institute of Physics

Monolithically integrated quantum dot optical modulator with semiconductor optical amplifier for thousand and original band optical communication

Science.gov (United States)

Yamamoto, Naokatsu; Akahane, Kouichi; Umezawa, Toshimasa; Matsumoto, Atsushi; Kawanishi, Tetsuya

2016-04-01

A monolithically integrated quantum dot (QD) optical gain modulator (OGM) with a QD semiconductor optical amplifier (SOA) was successfully developed with T-band (1.0 µm waveband) and O-band (1.3 µm waveband) QD optical gain materials for Gbps-order, high-speed optical data generation. The insertion loss due to coupling between the device and the optical fiber was effectively compensated for by the SOA section. It was also confirmed that the monolithic QD-OGM/SOA device enabled >4.8 Gbps optical data generation with a clear eye opening in the T-band. Furthermore, we successfully demonstrated error-free 4.8 Gbps optical data transmissions in each of the six wavelength channels over a 10-km-long photonic crystal fiber using the monolithic QD-OGM/SOA device in multiple O-band wavelength channels, which were generated by the single QD gain chip. These results suggest that the monolithic QD-OGM/SOA device will be advantageous in ultra-broadband optical frequency systems that utilize the T+O-band for short- and medium-range optical communications.

P-type conduction in Mg-doped GaN treated with low-energy electron beam irradiation (LEEBI)

International Nuclear Information System (INIS)

Amano, Hiroshi; Kito, Masahiro; Hiramatsu, Kazumasa

1989-01-01

Distinct p-type conduction is realized with Mg-doped GaN by the low-energy electron-beam irradiation (LEEBI) treatment, and the properties of the GaN p-n junction LED are reported for the first time. It was found that the LEEBI treatment drastically lowers the resistivity and remarkably enhances the PL efficiency of MOVPE-grown Mg-doped GaN. The Hall effect measurement of this Mg-doped GaN treated with LEEBI at room temperature showed that the hole concentration is ∼2·10 16 cm -3 , the hole mobility is ∼8 cm 2 /V·s and the resistivity is ∼35Ω· cm. The p-n junction LED using Mg-doped GaN treated with LEEBI as the p-type material showed strong near-band-edge emission due to the hole injection from the p-layer to the n-layer at room temperature. (author)

Electron transport properties of degenerate n-type GaN prepared by pulsed sputtering

Science.gov (United States)

Ueno, Kohei; Fudetani, Taiga; Arakawa, Yasuaki; Kobayashi, Atsushi; Ohta, Jitsuo; Fujioka, Hiroshi

2017-12-01

We report a systematic investigation of the transport properties of highly degenerate electrons in Ge-doped and Si-doped GaN epilayers prepared using the pulsed sputtering deposition (PSD) technique. Secondary-ion mass spectrometry and Hall-effect measurements revealed that the doping efficiency of PSD n-type GaN is close to unity at electron concentrations as high as 5.1 × 1020 cm-3. A record low resistivity for n-type GaN of 0.16 mΩ cm was achieved with an electron mobility of 100 cm2 V-1 s-1 at a carrier concentration of 3.9 × 1020 cm-3. We explain this unusually high electron mobility of PSD n-type GaN within the framework of conventional scattering theory by modifying a parameter related to nonparabolicity of the conduction band. The Ge-doped GaN films show a slightly lower electron mobility compared with Si-doped films with the same carrier concentrations, which is likely a consequence of the formation of a small number of compensation centers. The excellent electrical properties presented in this letter clearly demonstrate the striking advantages of the low-temperature PSD technique for growing high-quality and highly conductive n-type GaN.

Electron transport properties of degenerate n-type GaN prepared by pulsed sputtering

Directory of Open Access Journals (Sweden)

Kohei Ueno

2017-12-01

Full Text Available We report a systematic investigation of the transport properties of highly degenerate electrons in Ge-doped and Si-doped GaN epilayers prepared using the pulsed sputtering deposition (PSD technique. Secondary-ion mass spectrometry and Hall-effect measurements revealed that the doping efficiency of PSD n-type GaN is close to unity at electron concentrations as high as 5.1 × 1020 cm−3. A record low resistivity for n-type GaN of 0.16 mΩ cm was achieved with an electron mobility of 100 cm2 V−1 s−1 at a carrier concentration of 3.9 × 1020 cm−3. We explain this unusually high electron mobility of PSD n-type GaN within the framework of conventional scattering theory by modifying a parameter related to nonparabolicity of the conduction band. The Ge-doped GaN films show a slightly lower electron mobility compared with Si-doped films with the same carrier concentrations, which is likely a consequence of the formation of a small number of compensation centers. The excellent electrical properties presented in this letter clearly demonstrate the striking advantages of the low-temperature PSD technique for growing high-quality and highly conductive n-type GaN.

Reduction of the Mg acceptor activation energy in GaN, AlN, Al0.83Ga0.17N and MgGa δ-doping (AlN)5/(GaN)1: the strain effect

Science.gov (United States)

Jiang, Xin-He; Shi, Jun-Jie; Zhang, Min; Zhong, Hong-Xia; Huang, Pu; Ding, Yi-Min; He, Ying-Ping; Cao, Xiong

2015-12-01

To resolve the p-type doping problem of Al-rich AlGaN alloys, we investigate the influence of biaxial and hydrostatic strains on the activation energy, formation energy and band gap of Mg-doped GaN, AlN, Al0.83Ga0.17N disorder alloy and (AlN)5/(GaN)1 superlattice based on first-principles calculations by combining the standard DFT and hybrid functional. We find that the Mg acceptor activation energy {{E}\\text{A}} , the formation energy {{E}\\text{f}} and the band gap {{E}\\text{g}} decrease with increasing the strain ɛ. The hydrostatic strain has a more remarkable impact on {{E}\\text{g}} and {{E}\\text{A}} than the biaxial strain. Both {{E}\\text{A}} and {{E}\\text{g}} have a linear dependence on the hydrostatic strain. For the biaxial strain, {{E}\\text{g}} shows a parabolic dependence on ɛ if \\varepsilon ≤slant 0 while it becomes linear if \\varepsilon ≥slant 0 . In GaN and (AlN)5/(GaN)1, {{E}\\text{A}} parabolically depends on the biaxial compressive strain and linearly depends on the biaxial tensible strain. However, the dependence is approximately linear over the whole biaxial strain range in AlN and Al0.83Ga0.17N. The Mg acceptor activation energy in (AlN)5/(GaN)1 can be reduced from 0.26 eV without strain to 0.16 (0.22) eV with the hydrostatic (biaxial) tensible strain 3%.

An S-band high gain relativistic klystron amplifier with high phase stability

Energy Technology Data Exchange (ETDEWEB)

Wu, Y. [Institute of Applied Electronics, China Academy of Engineering Physics, Mianyang 621900 (China); Science and Technology on High Power Microwave Laboratory, Mianyang 621900 (China); Li, Z. H.; Xu, Z.; Ma, Q. S. [Institute of Applied Electronics, China Academy of Engineering Physics, Mianyang 621900 (China); Xie, H. Q. [College of Science, Southwestern University of Science and Technology, Mianyang 621010 (China)

2014-11-15

For the purpose of coherent high power microwave combining, an S-band high gain relativistic klystron amplifier with high phase stability is presented and studied. By the aid of 3D particle-in-cell code and circuit simulation software, the mechanism of parasitic oscillation in the device is investigated. And the RF lossy material is adopted in the simulation and experiment to suppress the oscillation. The experimental results show that with an input RF power of 10 kW, a microwave pulse with power of 1.8 GW is generated with a gain of 52.6 dB. And the relative phase difference fluctuation between output microwave and input RF signal is less than ±10° in 90 ns.

Rare earths in GaN and ZnO studied with the PAC method; Seltene Erden in GaN und ZnO untersucht mit der PAC-Methode

Energy Technology Data Exchange (ETDEWEB)

Nedelec, R.

2007-07-01

The present thesis deals with the implantation and annealing behaviour of two examples of large-band-gap semiconductors GaN and ZnO. The studies begin with the annealing behaviour of GaN after the implantation of {sup 172}Lu. For GaN the annealing process begins at low temperatures with the decreasing of the damping of the lattice frequency. At essentially higher temperatures finally the substitunial contribution increases. This behaviour is also observed for other probe nuclei in GaN. For ZnO the behaviour at low temperature is different. Both for {sup 172}Lu and for {sup 181}Hf the damping is already after the implantation very low. The increasement of the substitutional contribution occurs like in GaN at higher temperatures. Thereafter for GaN and ZnO PAC spectra were token up at different measurement temperatures between 25 and 873 K. For {sup 172}Lu in GaN and in ZnO a strong temperature dependence of the lattice field gradient was observed. Also for {sup 181}Hf in ZnO a strong temperature dependence is observed. For {sup 172}Lu by means of a model for the interaction of quadrupole moments of electronic shells with the nucleus a lattice field gradient of {+-}5.9.10{sup 15} Vcm{sup -2} could be determined. For {sup 172}Lu in ZnO the model yields at 293 K a lattice field gradient of +14.10{sup 15} Vcm{sup -2} respectively -13.10{sup 15} Vcm{sup -2}. The corrsponding measurement with {sup 181}Hf yields a lattice field gradient of {+-}5.7.10{sup 15} Vcm{sup -2}.

Photoluminescence enhancement from GaN by beryllium doping

Science.gov (United States)

García-Gutiérrez, R.; Ramos-Carrazco, A.; Berman-Mendoza, D.; Hirata, G. A.; Contreras, O. E.; Barboza-Flores, M.

2016-10-01

High quality Be-doped (Be = 0.19 at.%) GaN powder has been grown by reacting high purity Ga diluted alloys (Be-Ga) with ultra high purity ammonia in a horizontal quartz tube reactor at 1200 °C. An initial low-temperature treatment to dissolve ammonia into the Ga melt produced GaN powders with 100% reaction efficiency. Doping was achieved by dissolving beryllium into the gallium metal. The powders synthesized by this method regularly consist of two particle size distributions: large hollow columns with lengths between 5 and 10 μm and small platelets in a range of diameters among 1 and 3 μm. The GaN:Be powders present a high quality polycrystalline profile with preferential growth on the [10 1 bar 1] plane, observed by means of X-ray diffraction. The three characteristics growth planes of the GaN crystalline phase were found by using high resolution TEM microscopy. The optical enhancing of the emission in the GaN powder is attributed to defects created with the beryllium doping. The room temperature photoluminescence emission spectra of GaN:Be powders, revealed the presence of beryllium on a shoulder peak at 3.39 eV and an unusual Y6 emission at 3.32eV related to surface donor-acceptor pairs. Also, a donor-acceptor-pair transition at 3.17 eV and a phonon replica transition at 3.1 eV were observed at low temperature (10 K). The well-known yellow luminescence band coming from defects was observed in both spectra at room and low temperature. Cathodoluminescence emission from GaN:Be powders presents two main peaks associated with an ultraviolet band emission and the yellow emission known from defects. To study the trapping levels related with the defects formed in the GaN:Be, thermoluminescence glow curves were obtained using UV and β radiation in the range of 50 and 150 °C.

Thermal Deformation and RF Performance Analyses for the SWOT Large Deployable Ka-Band Reflectarray

Science.gov (United States)

Fang, H.; Sunada, E.; Chaubell, J.; Esteban-Fernandez, D.; Thomson, M.; Nicaise, F.

2010-01-01

A large deployable antenna technology for the NASA Surface Water and Ocean Topography (SWOT) Mission is currently being developed by JPL in response to NRC Earth Science Tier 2 Decadal Survey recommendations. This technology is required to enable the SWOT mission due to the fact that no currently available antenna is capable of meeting SWOT's demanding Ka-Band remote sensing requirements. One of the key aspects of this antenna development is to minimize the effect of the on-orbit thermal distortion to the antenna RF performance. An analysis process which includes: 1) the on-orbit thermal analysis to obtain the temperature distribution; 2) structural deformation analysis to get the geometry of the antenna surface; and 3) the RF performance with the given deformed antenna surface has been developed to accommodate the development of this antenna technology. The detailed analysis process and some analysis results will be presented and discussed by this paper.

X/Ka Celestial Frame Improvements: Vision to Reality

Science.gov (United States)

Jacobs, C. S.; Bagri, D. S.; Britcliffe, M. J.; Clark, J. E.; Franco, M. M.; Garcia-Miro, C.; Goodhart, C. E.; Horiuchi, S.; Lowe, S. T.; Moll, V. E.;

Elevation Change Derived from SARAL/ALtiKa Altimetric Mission: Quality Assessment and Performance of the Ka-Band

Directory of Open Access Journals (Sweden)

Quanming Yang

2018-04-01

Full Text Available The waveform retracking algorithm is a key factor that affects the accuracy of elevation change from satellite altimetry over an ice sheet. The elevation change results from four waveform retracker algorithms (ICE1/ICE2/Sea Ice/OCEAN provided by the Satellite with ARgos and ALtiKa (SARAL/ALtiKa data were compared using repeated SARAL data between March 2013 and April 2016 to determine the optimal retracker in the crossovers of descending and ascending orbits over a Greenland ice sheet (GrIS. The ICE1 provided slightly better results than the three other algorithms with the lowest standard deviation (SD of 0.30 m year−1. Further comparison was also conducted between the Satellite with ARgos and ALtiKa (SARAL and Operation ICEBridge laser data, thereby indicating that ICE1 was the best retracker with an Root Mean Square Error (RMSE of 0.43 m year−1. The distribution of elevation change rate and uncertainties over Greenland from SARAL were presented using the selected ICE1 retracker with a volume loss of 40 ± 12 km3 year−1. This volume loss did not include the fast-changing coastal areas of the GrIS. A large thinning was observed in Jakobshavn Isbræ, and a trend that extended far inland was also found from 2013–2016. Furthermore, a melting ice sheet was observed in the large areas northwest over the GrIS.

Vacancy-type defects in Al2O3/GaN structure probed by monoenergetic positron beams

Science.gov (United States)

Uedono, Akira; Nabatame, Toshihide; Egger, Werner; Koschine, Tönjes; Hugenschmidt, Christoph; Dickmann, Marcel; Sumiya, Masatomo; Ishibashi, Shoji

2018-04-01

Defects in the Al2O3(25 nm)/GaN structure were probed by using monoenergetic positron beams. Al2O3 films were deposited on GaN by atomic layer deposition at 300 °C. Temperature treatment above 800 °C leads to the introduction of vacancy-type defects in GaN due to outdiffusion of atoms from GaN into Al2O3. The width of the damaged region was determined to be 40-50 nm from the Al2O3/GaN interface, and some of the vacancies were identified to act as electron trapping centers. In the Al2O3 film before and after annealing treatment at 300-900 °C, open spaces with three different sizes were found to coexist. The density of medium-sized open spaces started to decrease above 800 °C, which was associated with the interaction between GaN and Al2O3. Effects of the electron trapping/detrapping processes of interface states on the flat band voltage and the defects in GaN were also discussed.

Design considerations for RF power amplifiers demonstrated through a GSM/EDGE power amplifier module

NARCIS (Netherlands)

Baltus, P.G.M.; Bezooijen, van A.; Huijsing, J.H.; Steyaert, M.; Roermund, van A.H.M.

2002-01-01

This paper describes the design considerations for RF power amplifiers in general, including trends in systems, linearity and efficiency, the PA environment, implementation is sues and technology. As an example a triple-band (900/1800/1900MHz) dual mode (GSMIEdge) power amplifier module is described

A high power cross-field amplifier at X-Band

International Nuclear Information System (INIS)

Eppley, K.; Feinstein, J.; Ko, K.; Kroll, N.; Lee, T.; Nelson, E.

1991-05-01

A high power cross-field amplifier is under development at SLAC with the objective of providing sufficient peak power to feed a section of an X-Band (11.424 GHz) accelerator without the need for pulse compression. The CFA being designed employs a conventional distributed secondary emission cathode but a novel anode structure which consists of an array of vane resonators alternatively coupled to a rectangular waveguide. The waveguide impedance (width) is tapered linearly from input to output so as to provide a constant RF voltage at the vane tips, leading to uniform power generation along the structure. Nominal design for this tube calls for 300 MW output power, 20 dB gain, DC voltage 142 KV, magnetic field 5 KG, anode-cathode gap 3.6 mm and total interaction length of about 60 cm. These specifications have been supported by computer simulations of both the RF slow wave structure as well as the electron space charge wave interaction. We have used ARGUS to model the cold circuit properties and CONDOR to model the electronic power conversion. An efficiency of 60 percent can be expected. We will discuss the details of the design effort. 5 refs., 6 figs

Effect of light Si doping on the properties of GaN

International Nuclear Information System (INIS)

Shang, Lin; Zhai, Guangmei; Jia, Zhigang; Mei, Fuhong; Lu, Taiping; Liu, Xuguang; Xu, Bingshe

2016-01-01

An obvious increase in electron mobility and yellow luminescence (YL) band intensity was found in light Si doping GaN. For a series of GaN samples with different doping concentration, the dislocation density is almost the same. It is inferred that the abrupt increase in mobility and YL intensity does not originate from the change of dislocation density. The mobility behavior is attributed to the screening of scattering by dislocation and increase of ionized impurity scattering with the increase of Si doping concentration. At lower doping level, the screening of dislocation scattering is dominant, which results in the increase in carrier mobility. At higher doping level, the increase in ionized impurity scattering leads to the decrease in carrier mobility. Higher mobility causes longer diffusion length of nonequilibrium carrier. More dislocations will participate in the recombination process which induces stronger YL intensity in light Si doping GaN.

Tunable band gaps in graphene/GaN van der Waals heterostructures

International Nuclear Information System (INIS)

Huang, Le; Kang, Jun; Li, Yan; Li, Jingbo; Yue, Qu

2014-01-01

Van der Waals (vdW) heterostructures consisting of graphene and other two-dimensional materials provide good opportunities for achieving desired electronic and optoelectronic properties. Here, we focus on vdW heterostructures composed of graphene and gallium nitride (GaN). Using density functional theory, we perform a systematic study on the structural and electronic properties of heterostructures consisting of graphene and GaN. Small band gaps are opened up at or near the Γ point of the Brillouin zone for all of the heterostructures. We also investigate the effect of the stacking sequence and electric fields on their electronic properties. Our results show that the tunability of the band gap is sensitive to the stacking sequence in bilayer-graphene-based heterostructures. In particular, in the case of graphene/graphene/GaN, a band gap of up to 334 meV is obtained under a perpendicular electric field. The band gap of bilayer graphene between GaN sheets (GaN/graphene/graphene/GaN) shows similar tunability, and increases to 217 meV with the perpendicular electric field reaching 0.8 V Å  − 1 . (paper)

Bandwidth-Efficient Communication through 225 MHz Ka-band Relay Satellite Channel

Science.gov (United States)

Downey, Joseph A.; Downey, James M.; Reinhart, Richard C.; Evans, Michael A.; Mortensen, Dale J.

2016-01-01

The communications and navigation space infrastructure of the National Aeronautics and Space Administration (NASA) consists of a constellation of relay satellites (called Tracking and Data Relay Satellites (TDRS)) and a global set of ground stations to receive and deliver data to researchers around the world from mission spacecraft throughout the solar system. Planning is underway to enhance and transform the infrastructure over the coming decade. Key to the upgrade will be the simultaneous and efficient use of relay transponders to minimize cost and operations while supporting science and exploration spacecraft. Efficient use of transponders necessitates bandwidth efficient communications to best use and maximize data throughput within the allocated spectrum. Experiments conducted with NASA's Space Communication and Navigation (SCaN) Testbed on the International Space Station provides a unique opportunity to evaluate advanced communication techniques, such as bandwidth-efficient modulations, in an operational flight system. Demonstrations of these new techniques in realistic flight conditions provides critical experience and reduces the risk of using these techniques in future missions. Efficient use of spectrum is enabled by using high-order modulations coupled with efficient forward error correction codes. This paper presents a high-rate, bandwidth-efficient waveform operating over the 225 MHz Ka-band service of the TDRS System (TDRSS). The testing explores the application of Gaussian Minimum Shift Keying (GMSK), 2/4/8-phase shift keying (PSK) and 16/32- amplitude PSK (APSK) providing over three bits-per-second-per-Hertz (3 b/s/Hz) modulation combined with various LDPC encoding rates to maximize through- put. With a symbol rate of 200 M-band, coded data rates of 1000 Mbps were tested in the laboratory and up to 800 Mbps over the TDRS 225 MHz channel. This paper will present on the high-rate waveform design, channel characteristics, performance results

Polarized infrared reflectance study of free standing cubic GaN grown by molecular beam epitaxy

International Nuclear Information System (INIS)

Lee, S.C.; Ng, S.S.; Hassan, H. Abu; Hassan, Z.; Zainal, N.; Novikov, S.V.; Foxon, C.T.; Kent, A.J.

2014-01-01

Optical properties of free standing cubic gallium nitride grown by molecular beam epitaxy system are investigated by a polarized infrared (IR) reflectance technique. A strong reststrahlen band, which reveals the bulk-like optical phonon frequencies, is observed. Meanwhile, continuous oscillation fringes, which indicate the sample consists of two homogeneous layers with different dielectric constants, are observed in the non-reststrahlen region. By obtaining the first derivative of polarized IR reflectance spectra measured at higher angles of incidence, extra phonon resonances are identified at the edges of the reststrahlen band. The observations are verified with the theoretical results simulated based on a multi-oscillator model. - Highlights: • First time experimental studies of IR optical phonons in bulk like, cubic GaN layer. • Detection of extra phonon modes of cubic GaN by polarized IR reflectance technique. • Revelation of IR multiphonon modes of cubic GaN by first derivative numerical method. • Observation of multiphonon modes requires very high angle of incidence. • Resonance splitting effect induced by third phonon mode is a qualitative indicator

Growth of InGaN multiple quantum wells and GaN eplilayer on GaN substrate

International Nuclear Information System (INIS)

Lee, Sung-Nam; Paek, H.S.; Son, J.K.; Sakong, T.; Yoon, E.; Nam, O.H.; Park, Y.

2006-01-01

We investigated that the surface morphology of GaN epilayers was significantly affected by the surface tilt orientation of GaN substrate. Surface morphologies of GaN epilayers on GaN substrates show three types: mirror, wavy, and hillock. These surface morphologies are dependent on the surface orientation of GaN substrates. It is found that the hillock morphology of GaN epilayer was formed on the GaN substrate with surface tilt orientation less than 0.1 o . As the surface tilt angle increased to 0.35 o , the surface morphology varied from hillock to wavy morphology. Above a surface tilt angle of 0.4 o , surface morphology changed to the mirror-like type morphology. Additionally, these three types of GaN surface morphology also affected the optical quality of GaN epilayers as well as InGaN multiple quantum wells on GaN substrates by non-uniform In incorporation on the different surface morphologies of GaN epilayers

Demonstration of Multi-Gbps Data Rates at Ka-Band Using Software-Defined Modem and Broadband High Power Amplifier for Space Communications

Science.gov (United States)

Simons, Rainee N.; Wintucky, Edwin G.; Landon, David G.; Sun, Jun Y.; Winn, James S.; Laraway, Stephen; McIntire, William K.; Metz, John L.; Smith, Francis J.

2011-01-01

The paper presents the first ever research and experimental results regarding the combination of a software-defined multi-Gbps modem and a broadband high power space amplifier when tested with an extended form of the industry standard DVB-S2 and LDPC rate 9/10 FEC codec. The modem supports waveforms including QPSK, 8-PSK, 16-APSK, 32-APSK, 64-APSK, and 128-QAM. The broadband high power amplifier is a space qualified traveling-wave tube (TWT), which has a passband greater than 3 GHz at 33 GHz, output power of 200 W and efficiency greater than 60 percent. The modem and the TWTA together enabled an unprecedented data rate at 20 Gbps with low BER of 10(exp -9). The presented results include a plot of the received waveform constellation, BER vs. E(sub b)/N(sub 0) and implementation loss for each of the modulation types tested. The above results when included in an RF link budget analysis show that NASA s payload data rate can be increased by at least an order of magnitude (greater than 10X) over current state-of-practice, limited only by the spacecraft EIRP, ground receiver G/T, range, and available spectrum or bandwidth.

Exciton emission from bare and hybrid plasmonic GaN nanorods

Science.gov (United States)

Mohammadi, Fatemesadat; Kunert, Gerd; Hommel, Detlef; Ge, Jingxuan; Duscher, Gerd; Schmitzer, Heidrun; Wagner, Hans Peter

We study the exciton emission of hybrid gold nanoparticle/Alq3 (aluminiumquinoline)/wurtzite GaN nanorods. GaN nanorods of 1.5 μm length and 250 nm diameter were grown by plasma assisted MBE. Hybrid GaN nanorods were synthesized by organic molecular beam deposition. Temperature and power dependent time integrated (TI) and time resolved (TR) photoluminescence (PL) measurements were performed on bare and hybrid structures. Bare nanorods show donor (D0,X) and acceptor bound (A0,X) exciton emission at 3.473 eV and at 3.463 eV, respectively. TR-PL trace modeling reveal lifetimes of 240 ps and 1.4 ns for the (D0,X) and (A0,X) transition. 10 nm gold coated GaN nanorods show a significant PL quenching and (D0,X) lifetime shortening which is tentatively attributed to impact ionization of (D0,X) due to hot electron injection from the gold nanoparticles. This is supported by electron energy loss spectroscopy that shows a redshift of a midgap state transition indicating a reduction of a preexisting band-bending at the nanorod surface due to positive charging of the gold nanoparticles. Inserting a nominally 5 nm thick Alq3 spacer between the nanorod and the gold reduces the PL quenching and lifetime shortening. Plasmonic nanorods with a 30 nm thick Alq3 spacer reveal lifetimes which are nearly identical to uncoated GaN nanorods.

Investigation of blue luminescence in Mg-doped nonpolar a-plane GaN

International Nuclear Information System (INIS)

Kim, Hogyoung; Song, Keun Man

2014-01-01

The temperature-dependent optical characteristics of blue luminescence (BL) band in Mg-doped nonpolar a-plane GaN films were investigated using photoluminescence (PL) measurements. For the sample with the highest Cp 2 Mg/TMGa ([Mg]/[Ga]) molar ratio, the BL band was shown to have two distinct peaks, one at about 2.95 eV and the other at about 2.75 eV, which were associated with the donor–acceptor pair (DAP) transitions between the one shallow Mg acceptor level and the two different deep donor levels. In contrast, a single broad BL band was observed for all other samples. Strong potential fluctuations caused by high compensation level in the sample with the highest [Mg]/[Ga] molar ratio might localize the carriers related to the 2.75 eV band, leading to the different emission characteristics in BL band as compared to other samples. -- Highlights: • The temperature-dependent optical characteristics of blue luminescence (BL) in Mg-doped nonpolar a-plane GaN were investigated using photoluminescence (PL) measurements. • At the highest [Mg]/[Ga] molar ratio, the BL was observed to have two distinct peaks at low temperatures. • The BL was associated with the one shallow Mg acceptor level and the two different Mg-related deep donor levels. • Strong potential fluctuations caused by high compensation level might localize the carriers

Investigation of blue luminescence in Mg-doped nonpolar a-plane GaN

Energy Technology Data Exchange (ETDEWEB)

Kim, Hogyoung [Department of Optometry, Seoul National University of Science and Technology, Seoul 139-743 (Korea, Republic of); Song, Keun Man, E-mail: skmmec@gmail.com [Korea Advanced Nano Fab Center, Suwon, Gyeonggi 443-770 (Korea, Republic of)

2014-01-15

The temperature-dependent optical characteristics of blue luminescence (BL) band in Mg-doped nonpolar a-plane GaN films were investigated using photoluminescence (PL) measurements. For the sample with the highest Cp{sub 2}Mg/TMGa ([Mg]/[Ga]) molar ratio, the BL band was shown to have two distinct peaks, one at about 2.95 eV and the other at about 2.75 eV, which were associated with the donor–acceptor pair (DAP) transitions between the one shallow Mg acceptor level and the two different deep donor levels. In contrast, a single broad BL band was observed for all other samples. Strong potential fluctuations caused by high compensation level in the sample with the highest [Mg]/[Ga] molar ratio might localize the carriers related to the 2.75 eV band, leading to the different emission characteristics in BL band as compared to other samples. -- Highlights: • The temperature-dependent optical characteristics of blue luminescence (BL) in Mg-doped nonpolar a-plane GaN were investigated using photoluminescence (PL) measurements. • At the highest [Mg]/[Ga] molar ratio, the BL was observed to have two distinct peaks at low temperatures. • The BL was associated with the one shallow Mg acceptor level and the two different Mg-related deep donor levels. • Strong potential fluctuations caused by high compensation level might localize the carriers.

Integrated Production of Ultra-Low Defect GaN Films and Devices for High-Power Amplifiers, Phase I

Data.gov (United States)

National Aeronautics and Space Administration — High quality GaN epitaxial films are key to current efforts for development of both high-power/high-speed electronic devices and optoelectronic devices. In fact,...

Incorporation of Mg in Free-Standing HVPE GaN Substrates

Science.gov (United States)

Zvanut, M. E.; Dashdorj, J.; Freitas, J. A.; Glaser, E. R.; Willoughby, W. R.; Leach, J. H.; Udwary, K.

2016-06-01

Mg, the only effective p-type dopant for nitrides, is well studied in thin films due to the important role of the impurity in light-emitting diodes and high-power electronics. However, there are few reports of Mg in thick free-standing GaN substrates. Here, we demonstrate successful incorporation of Mg into GaN grown by hydride vapor-phase epitaxy (HVPE) using metallic Mg as the doping source. The concentration of Mg obtained from four separate growth runs ranged between 1016 cm-3 and 1019 cm-3. Raman spectroscopy and x-ray diffraction revealed that Mg did not induce stress or perturb the crystalline quality of the HVPE GaN substrates. Photoluminescence (PL) and electron paramagnetic resonance (EPR) spectroscopies were performed to investigate the types of point defects in the crystals. The near-band-edge excitonic and shallow donor-shallow acceptor radiative recombination processes involving shallow Mg acceptors were prominent in the PL spectrum of a sample doped to 3 × 1018 cm-3, while the EPR signal was also thought to represent a shallow Mg acceptor. Detection of this signal reflects minimization of nonuniform strain obtained in the thick free-standing HVPE GaN compared with heteroepitaxial thin films.

Integrated amplifying circuit with MOS transistors

Energy Technology Data Exchange (ETDEWEB)

Baylac, B; Merckel, G; Meunier, P

1974-01-25

The invention relates to a feedback-pass-band amplifier with MOS-transistors. The differential stage of conventional amplifiers is changed into an adding state, whereas the differential amplification stages are changed into amplifier inverter stages. All MOS transistors used in that amplifier are of similar configuration and are interdigitized, whereby the operating speed dispersion is reduced. This can be applied to obtaining a measurement channel for proportional chambers.

Spectroscopic XPEEM of highly conductive SI-doped GaN wires

Energy Technology Data Exchange (ETDEWEB)

Renault, O., E-mail: olivier.renault@cea.fr [Univ. Grenoble Alpes, F-38000 Grenoble (France); CEA, LETI, MINATEC Campus, F-38054 Grenoble (France); Morin, J. [Univ. Grenoble Alpes, F-38000 Grenoble (France); CEA, LETI, MINATEC Campus, F-38054 Grenoble (France); Tchoulfian, P. [Univ. Grenoble Alpes, F-38000 Grenoble (France); CEA, LETI, MINATEC Campus, F-38054 Grenoble (France); CNRS, Inst. NEEL, F-38042 Grenoble (France); Chevalier, N. [Univ. Grenoble Alpes, F-38000 Grenoble (France); CEA, LETI, MINATEC Campus, F-38054 Grenoble (France); Feyer, V. [Peter Grünberg Institute (PGI-6) and JARA-FIT, Research Center Jülich, D-52425 Jülich (Germany); Pernot, J. [Univ. Grenoble Alpes, F-38000 Grenoble (France); CNRS, Inst. NEEL, F-38042 Grenoble (France); Institut Universitaire de France, F-75005 Paris (France); Schneider, C.M. [Peter Grünberg Institute (PGI-6) and JARA-FIT, Research Center Jülich, D-52425 Jülich (Germany)

2015-12-15

Using soft X-ray photoelectron emission microscopy (XPEEM), complemented by scanning Auger microscopy (SAM) and scanning capacitance microscopy, we have quantitatively studied the incorporation of silicon and band bending at the surface (m-facet) of an individual, highly conductive Si-doped GaN micro-wires (Tchoulfian et al., Applied Physics Letters 102 (12), 2013). Electrically active n-dopants Si atoms in Ga interstitial sites are detected as nitride bonding states in the high-resolution Si2p core level spectra, and represent only a small fraction (<10%) of the overall Si surface concentration measured by SAM. The derived carrier concentration of 2×10{sup 21} at cm{sup −3} is in reasonable agreement with electrical measurements. A consistent surface band bending of ~1 eV is directly evidenced by surface photo-voltage measurements. Such an approach combining different surface-sensitive microscopies is of interest for studying other heavily doped semiconducting wires. - Highlights: • XPEEM analysis of state-of-the-art, heavily doped GaN wires with insights on the issue of the origin of the increased conductivity. • Combined microscopic approach with Scanning Auger microscopy and X-ray Photoeletron Emission Microscopy, to quantity the electrically active Si-dopants in GaN. • The determined concentration is found in reasonable agreement with the one derived from bulk electrical measurements. • The proposed method is of interest for studying the electronics and chemistry of doping in other heavily doped semiconducting wires.

Study of optical properties of bulk GaN crystals grown by HVPE

Energy Technology Data Exchange (ETDEWEB)

Gu, Hong; Ren, Guoqiang; Zhou, Taofei; Tian, Feifei; Xu, Yu; Zhang, Yumin; Wang, Mingyue; Zhang, Zhiqiang [Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123 (China); Cai, Demin [Suzhou Nanowin Science and Technology Co., Ltd., Suzhou 215123 (China); Wang, Jianfeng [Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123 (China); Suzhou Nanowin Science and Technology Co., Ltd., Suzhou 215123 (China); Xu, Ke, E-mail: kxu2006@sinano.ac.cn [Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123 (China); Suzhou Nanowin Science and Technology Co., Ltd., Suzhou 215123 (China)

2016-07-25

We investigated the optical properties of a series of GaN samples sliced from the same bulk crystal grown using hydride vapor phase epitaxy. The high crystalline quality of the samples was evaluated using cathodoluminescence measurements, and the dislocation density ranged from 2.4 × 10{sup 6} to 2.3 × 10{sup 5} cm{sup −2}. The impurity concentration was determined using secondary-ion mass spectroscopy, and photoluminescence (PL) measurements were conducted in the range of 3–300 K. We did not find a correlation between the O or C impurities and the weak yellow luminescence (YL) band. As the dislocation density decreased, the intensity of the band edge emission increased and that of the YL band decreased. A competition between the two-electron satellite lines correlated to Si and the YL band was also observed in the low-temperature PL spectra, which demonstrated that the Si impurity also plays an important role in the weak YL band of these GaN samples. These results indicate that the Si donors around the dislocations, as reasonable sources of shallow donors, will recombine with possible deep acceptors and finally respond with the YL. - Highlights: • The investigated samples were sliced from the same bulk crystal. • No correlation between the O or C impurities and the weak YL band is observed. • A well-regulated relationship between the YL band and the dislocations is found. • A competition between the TES-Si lines and the YL band is discussed. • The dislocations trapping Si impurity is suggested to be responsible for YL band.

A C-band 55% PAE high gain two-stage power amplifier based on AlGaN/GaN HEMT

International Nuclear Information System (INIS)

Zheng Jia-Xin; Ma Xiao-Hua; Zhang Hong-He; Zhang Meng; Hao Yue; Lu Yang; Zhao Bo-Chao; Cao Meng-Yi

2015-01-01

A C-band high efficiency and high gain two-stage power amplifier based on AlGaN/GaN high electron mobility transistor (HEMT) is designed and measured in this paper. The input and output impedances for the optimum power-added efficiency (PAE) are determined at the fundamental and 2nd harmonic frequency (f 0 and 2f 0 ). The harmonic manipulation networks are designed both in the driver stage and the power stage which manipulate the second harmonic to a very low level within the operating frequency band. Then the inter-stage matching network and the output power combining network are calculated to achieve a low insertion loss. So the PAE and the power gain is greatly improved. In an operation frequency range of 5.4 GHz–5.8 GHz in CW mode, the amplifier delivers a maximum output power of 18.62 W, with a PAE of 55.15% and an associated power gain of 28.7 dB, which is an outstanding performance. (paper)

Ga vacancy induced ferromagnetism enhancement and electronic structures of RE-doped GaN

International Nuclear Information System (INIS)

Zhong Guohua; Zhang Kang; He Fan; Ma Xuhang; Lu Lanlan; Liu Zhuang; Yang Chunlei

2012-01-01

Because of their possible applications in spintronic and optoelectronic devices, GaN dilute magnetic semiconductors (DMSs) doped by rare-earth (RE) elements have attracted much attention since the high Curie temperature was obtained in RE-doped GaN DMSs and a colossal magnetic moment was observed in the Gd-doped GaN thin film. We have systemically studied the GaN DMSs doped by RE elements (La, Ce-Yb) using the full-potential linearized augmented plane wave method within the framework of density functional theory and adding the considerations of the electronic correlation and the spin-orbital coupling effects. We have studied the electronic structures of DMSs, especially for the contribution from f electrons. The origin of magnetism, magnetic interaction and the possible mechanism of the colossal magnetic moment were explored. We found that, for materials containing f electrons, electronic correlation was usually strong and the spin-orbital coupling was sometimes crucial in determining the magnetic ground state. It was found that GaN doped by La was non-magnetic. GaN doped by Ce, Nd, Pm, Eu, Gd, Tb and Tm are stabilized at antiferromagnetic phase, while GaN doped by other RE elements show strong ferromagnetism which is suitable materials for spintronic devices. Moreover, we have identified that the observed large enhancement of magnetic moment in GaN is mainly caused by Ga vacancies (3.0μB per Ga vacancy), instead of the spin polarization by magnetic ions or originating from N vacancies. Various defects, such as substitutional Mg for Ga, O for N under the RE doping were found to bring a reduction of ferromagnetism. In addition, intermediate bands were observed in some systems of GaN:RE and GaN with intrinsic defects, which possibly opens the potential application of RE-doped semiconductors in the third generation high efficiency photovoltaic devices.

Integrated Production of Ultra-Low Defect GaN Films and Devices for High-Power Amplifiers, Phase II

Data.gov (United States)

National Aeronautics and Space Administration — High quality GaN epitaxial films are one of the keys to current efforts for development of both high-power/high-speed electronic devices and optoelectronic devices....

Structure guided GANs

Science.gov (United States)

Cao, Feidao; Zhao, Huaici; Liu, Pengfei

2017-11-01

Generative adversarial networks (GANs) has achieved success in many fields. However, there are some samples generated by many GAN-based works, whose structure is ambiguous. In this work, we propose Structure Guided GANs that introduce structural similar into GANs to overcome the problem. In order to achieve our goal, we introduce an encoder and a decoder into a generator to design a new generator and take real samples as part of the input of a generator. And we modify the loss function of the generator accordingly. By comparison with WGAN, experimental results show that our proposed method overcomes largely sample structure ambiguous and can generate higher quality samples.

Site-selective spectroscopy of Er in GaN

International Nuclear Information System (INIS)

Dierolf, V.; Sandmann, C.; Zavada, J.; Chow, P.; Hertog, B.

2004-01-01

We investigated different Er 3+ defect sites found in Er-doped GaN layers by site-selective combined excitation-emission spectroscopy and studied the role of these sites in different direct and multistep excitation schemes. The layers were grown by molecular beam epitaxy and were 200 nm thick. Two majority sites were found along with several minority sites. The sites strongly differ in excitation and energy transfer efficiencies as well as branching ratios during relaxation. For this reason, relative emission intensities from these sites depend strongly on emission and excitation. The sites were identified for several transitions and a comprehensive list of energy levels has been compiled. One of the minority sites appears strongly under ultraviolet excitation above the GaN band gap suggesting that this site is an excellent trap for excitation energy of electron-hole pairs

Cusp Guns for Helical-Waveguide Gyro-TWTs of a High-Gain High-Power W-Band Amplifier Cascade

Science.gov (United States)

Manuilov, V. N.; Samsonov, S. V.; Mishakin, S. V.; Klimov, A. V.; Leshcheva, K. A.

2018-02-01

The evaluation, design, and simulations of two different electron guns generating the beams for W-band second cyclotron harmonic gyro-TWTs forming a high-gain powerful amplifier cascade are presented. The optimum configurations of the systems creating nearly axis-encircling electron beams having velocity pitch-factor up to 1.5, voltage/current of 40 kV/0.5 A, and 100 kV/13 A with acceptable velocity spreads have been found and are presented.

Investigation of GaN LED with Be-implanted Mg-doped GaN layer

International Nuclear Information System (INIS)

Huang, H.-W.; Kao, C.C.; Chu, J.T.; Kuo, H.C.; Wang, S.C.; Yu, C.C.; Lin, C.F.

2004-01-01

We report the electrical and optical characteristics of GaN light emitting diode (LED) with beryllium (Be) implanted Mg-doped GaN layer. The p-type layer of Be-implanted GaN LED showed a higher hole carrier concentration of 2.3 x 10 18 cm -3 and low specific contact resistance value of 2.0 x 10 -4 Ωcm 2 than as-grown p-GaN LED samples without Be-implantation. The Be-implanted GaN LEDs with InGaN/GaN MQW show slightly lower light output (about 10%) than the as-grown GaN LEDs, caused by the high RTA temperature annealing process

High-quality GaN nanowires grown on Si and porous silicon by thermal evaporation

Energy Technology Data Exchange (ETDEWEB)

Shekari, L., E-mail: lsg09_phy089@student.usm.my [Nano-Optoelectronics Research and Technology Laboratory, School of Physics, Universiti Sains Malaysia, 11800 USM, Penang (Malaysia); Ramizy, A.; Omar, K.; Hassan, H. Abu; Hassan, Z. [Nano-Optoelectronics Research and Technology Laboratory, School of Physics, Universiti Sains Malaysia, 11800 USM, Penang (Malaysia)

2012-12-15

Highlights: Black-Right-Pointing-Pointer A new kind of substrate (porous silicon) was used. Black-Right-Pointing-Pointer Also this research introduces an easy and safe method to grow high quality GaN NWs. Black-Right-Pointing-Pointer This is a new growth process to decrease the cost, complexity of growth of GaN NWs. Black-Right-Pointing-Pointer It is a controllable method to synthesize GaN NWs by thermal evaporation. - Abstract: Nanowires (NWs) of GaN thin films were prepared on as-grown Si (1 1 1) and porous silicon (PS) substrates using thermal evaporation method. The film growth produced high-quality wurtzite GaN NWs. The size, morphology, and nanostructures of the crystals were investigated through scanning electron microscopy, high-resolution X-ray diffraction and photoluminescence spectroscopy. The NWs grown on porous silicon were thinner, longer and denser compared with those on as-grown Si. The energy band gap of the NWs grown on PS was larger than that of NWs on as-grown Si. This is due to the greater quantum confinement effects of the crystalline structure of the NWs grown on PS.

Band Alignment at GaN/Single-Layer WSe2 Interface

KAUST Repository

Tangi, Malleswararao

2017-02-21

We study the band discontinuity at the GaN/single-layer (SL) WSe2 heterointerface. The GaN thin layer is epitaxially grown by molecular beam epitaxy on chemically vapor deposited SL-WSe2/c-sapphire. We confirm that the WSe2 was formed as an SL from structural and optical analyses using atomic force microscopy, scanning transmission electron microscopy, micro-Raman, absorbance, and microphotoluminescence spectra. The determination of band offset parameters at the GaN/SL-WSe2 heterojunction is obtained by high-resolution X-ray photoelectron spectroscopy, electron affinities, and the electronic bandgap values of SL-WSe2 and GaN. The valence band and conduction band offset values are determined to be 2.25 ± 0.15 and 0.80 ± 0.15 eV, respectively, with type II band alignment. The band alignment parameters determined here provide a route toward the integration of group III nitride semiconducting materials with transition metal dichalcogenides (TMDs) for designing and modeling of their heterojunction-based electronic and optoelectronic devices.

Band Alignment at GaN/Single-Layer WSe2 Interface

KAUST Repository

Tangi, Malleswararao; Mishra, Pawan; Tseng, Chien-Chih; Ng, Tien Khee; Hedhili, Mohamed N.; Anjum, Dalaver H.; Alias, Mohd Sharizal; Wei, Nini; Li, Lain-Jong; Ooi, Boon S.

2017-01-01

We study the band discontinuity at the GaN/single-layer (SL) WSe2 heterointerface. The GaN thin layer is epitaxially grown by molecular beam epitaxy on chemically vapor deposited SL-WSe2/c-sapphire. We confirm that the WSe2 was formed as an SL from structural and optical analyses using atomic force microscopy, scanning transmission electron microscopy, micro-Raman, absorbance, and microphotoluminescence spectra. The determination of band offset parameters at the GaN/SL-WSe2 heterojunction is obtained by high-resolution X-ray photoelectron spectroscopy, electron affinities, and the electronic bandgap values of SL-WSe2 and GaN. The valence band and conduction band offset values are determined to be 2.25 ± 0.15 and 0.80 ± 0.15 eV, respectively, with type II band alignment. The band alignment parameters determined here provide a route toward the integration of group III nitride semiconducting materials with transition metal dichalcogenides (TMDs) for designing and modeling of their heterojunction-based electronic and optoelectronic devices.

Strain- and electric field-induced band gap modulation in nitride nanomembranes

International Nuclear Information System (INIS)

Amorim, Rodrigo G; Zhong Xiaoliang; Mukhopadhyay, Saikat; Pandey, Ravindra; Rocha, Alexandre R; Karna, Shashi P

2013-01-01

The hexagonal nanomembranes of the group III-nitrides are a subject of interest due to their novel technological applications. In this paper, we investigate the strain- and electric field-induced modulation of their band gaps in the framework of density functional theory. For AlN, the field-dependent modulation of the bandgap is found to be significant whereas the strain-induced semiconductor-metal transition is predicted for GaN. A relatively flat conduction band in AlN and GaN nanomembranes leads to an enhancement of their electronic mobility compared to that of their bulk counterparts. (paper)

Self-catalyst growth of novel GaN nanowire flowers on Si (111) using thermal evaporation technique

Energy Technology Data Exchange (ETDEWEB)

Saron, K.M.A., E-mail: kamalmohammedabdalla@yahoo.com [Nano-Optoelectronics Research and Technology Laboratory (NOR), School of Physics, Universiti Sains Malaysia, Penang 11800 (Malaysia); Hashim, M.R., E-mail: roslan@usm.my [Nano-Optoelectronics Research and Technology Laboratory (NOR), School of Physics, Universiti Sains Malaysia, Penang 11800 (Malaysia)

2013-05-15

We investigated the effect of substrate temperature on nanowire (NW) flower GaN epitaxial layers grown on catalyst-free Si (111) through physical vapor deposition via the thermal evaporation of GaN powder at 1150 °C in the absence of NH{sub 3} gas. The NW flowers were grown at various substrate temperatures from 1000 °C to 1100 °C for 60 min in N{sub 2} ambient. The surface morphology as well as the structural and optical properties of GaN NW flowers were examined by scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy, X-ray diffraction, and photoluminescence (PL). The results showed that the increase in substrate temperature resulted in a variation in crystal quality and surface morphology. SEM showed that the substrate temperature has a stronger effect on NW density and growth rate with respect to time. The average length of GaN flowers is estimated to be longer than 300 μm after 1 h at 1100 °C, which corresponds to a fast growth rate of more than 200 μm h{sup −1} at all substrate temperatures. The PL measurements showed strong near-band-edge (NBE) emission with a weak deep level emission. The green-yellow emission (GYE) can be attributed to N vacancies or to the V{sub Ga}–O{sub N}-complexes. The NBE peak exhibited a redshift with increasing substrate temperature, which results from the increase in strain level. The growth mechanism of the polycrystalline GaN NWs was also discussed. - Highlights: ► GaN nanowired flowers were grown on free-catalysts Si (111) using PVD. ► A higher temperature, higher uniformity, larger lengths and diameters of the NW flowers. ► As substrate temperature increases the diameters and growth rate of NWs increases. ► A lower temperature resulted in a high density and good crystal quality of GaN NWs. ► The increase in substrate temperature increased the redshift in UV band emission.

Self-catalyst growth of novel GaN nanowire flowers on Si (111) using thermal evaporation technique

International Nuclear Information System (INIS)

Saron, K.M.A.; Hashim, M.R.

2013-01-01

We investigated the effect of substrate temperature on nanowire (NW) flower GaN epitaxial layers grown on catalyst-free Si (111) through physical vapor deposition via the thermal evaporation of GaN powder at 1150 °C in the absence of NH 3 gas. The NW flowers were grown at various substrate temperatures from 1000 °C to 1100 °C for 60 min in N 2 ambient. The surface morphology as well as the structural and optical properties of GaN NW flowers were examined by scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy, X-ray diffraction, and photoluminescence (PL). The results showed that the increase in substrate temperature resulted in a variation in crystal quality and surface morphology. SEM showed that the substrate temperature has a stronger effect on NW density and growth rate with respect to time. The average length of GaN flowers is estimated to be longer than 300 μm after 1 h at 1100 °C, which corresponds to a fast growth rate of more than 200 μm h −1 at all substrate temperatures. The PL measurements showed strong near-band-edge (NBE) emission with a weak deep level emission. The green-yellow emission (GYE) can be attributed to N vacancies or to the V Ga –O N -complexes. The NBE peak exhibited a redshift with increasing substrate temperature, which results from the increase in strain level. The growth mechanism of the polycrystalline GaN NWs was also discussed. - Highlights: ► GaN nanowired flowers were grown on free-catalysts Si (111) using PVD. ► A higher temperature, higher uniformity, larger lengths and diameters of the NW flowers. ► As substrate temperature increases the diameters and growth rate of NWs increases. ► A lower temperature resulted in a high density and good crystal quality of GaN NWs. ► The increase in substrate temperature increased the redshift in UV band emission

A study of photoluminescence and micro-Raman scattering in C-implanted GaN

International Nuclear Information System (INIS)

Zhang Limin; Zhang Xiaodong; Liu Zhengmin

2010-01-01

GaN samples (no yellow luminescence) in their as-grown states were implanted with 10 13 -10 17 C ions/cm 2 and studied by photoluminescence spectra and micro-Raman scattering spectra. The photoluminescence study showed that yellow luminescence were produced in the C-implanted GaN after 950 degree C annealing, and the peaks of the near band edge emissions showed blue-shifts after C implantation. The Raman measurements indicated that the stresses in GaN films did not change after C implantation. The samples implanted with 10 15 cm -2 carbon ions had the Raman peak at 300 cm -1 , which is associated to the disorder-activated Raman scattering. However, further increasing the implantation dose resulted decreased intensity of the 300 cm -1 peak, due to the ion beam current increase with the implantation dose. (authors)

Effects of Thickness of a Low-Temperature Buffer and Impurity Incorporation on the Characteristics of Nitrogen-polar GaN.

Science.gov (United States)

Yang, Fann-Wei; Chen, Yu-Yu; Feng, Shih-Wei; Sun, Qian; Han, Jung

2016-12-01

In this study, effects of the thickness of a low temperature (LT) buffer and impurity incorporation on the characteristics of Nitrogen (N)-polar GaN are investigated. By using either a nitridation or thermal annealing step before the deposition of a LT buffer, three N-polar GaN samples with different thicknesses of LT buffer and different impurity incorporations are prepared. It is found that the sample with the thinnest LT buffer and a nitridation step proves to be the best in terms of a fewer impurity incorporations, strong PL intensity, fast mobility, small biaxial strain, and smooth surface. As the temperature increases at ~10 K, the apparent donor-acceptor-pair band is responsible for the decreasing integral intensity of the band-to-band emission peak. In addition, the thermal annealing of the sapphire substrates may cause more impurity incorporation around the HT-GaN/LT-GaN/sapphire interfacial regions, which in turn may result in a lower carrier mobility, larger biaxial strain, larger bandgap shift, and stronger yellow luminescence. By using a nitridation step, both a thinner LT buffer and less impurity incorporation are beneficial to obtaining a high quality N-polar GaN.

X-ray absorption and emission study of amorphous and nanocrystalline GaN films containing buried N2

International Nuclear Information System (INIS)

Ruck, B.J.; Koo, A.; Budde, F.; Granville, S.; Trodahl, H.J.

2004-01-01

Full text: It has been predicted that amorphous gallium nitride (a-GaN) may possess a well-defined wide band gap, and is thus a potential substitute for the more expensive crystalline form used in short wavelength optoelectronic devices. Experimental investigations of disordered GaN have lent support to this prediction, but the picture is complicated because the properties of the amorphous state are not unique, and instead depend on the exact nature of the disordered structure. We have pioneered a novel ion-assisted growth technique that produces GaN films with a microstructure that ranges from nanocrystalline, with crystallite size of order 3 nm, to fully amorphous, depending on the exact growth conditions. This presentation will give an overview of our research into the properties of disordered GaN, including characterization of the physical structure of the films and their electronic energy levels, and also their photoconductive response. In particular I will focus on synchrotron radiation studies of samples with a range of different microstructures. X-ray absorption spectroscopy (XAS) and x-ray emission spectroscopy (XES) provide particularly powerful tools for examining a sample's empty and filled electronic energy levels, respectively. The details of the absorption and emission processes make it possible to obtain atom-specific information and to investigate the symmetry of the electronic levels. An example of the information obtained is shown. The thin solid curve shows XAS data, which is a measure of the nitrogen /7-projected density of unfilled electronic states in this nanocrystalline GaN sample. The thick solid curve shows XES data from the same sample, which provides complementary information about the occupied valence band states. Although the spectral features are broader in fully amorphous films than in nanocrystalline samples, a well-defined band gap exists in both cases with magnitude similar to that of crystalline GaN. There are additional feature

A comparative study on magnetism in Zn-doped AlN and GaN from first-principles

International Nuclear Information System (INIS)

Xu, Liang; Wang, Lingling; Huang, Weiqing; Xiao, Wenzhi; Xiao, Gang

2014-01-01

First-principles calculations have been used to comparatively investigate electronic and magnetic properties of Zn-doped AlN and GaN. A total magnetic moment of 1.0 μ B induced by Zn is found in AlN, but not in GaN. Analyses show that the origin of spontaneous polarization not only depend on the localized atomic orbitals of N and sufficient hole concentration, but also the relative intensity of the covalency of matrix. The relatively stronger covalent character of GaN with respect to AlN impedes forming local magnetic moment in GaN matrix. Our study offers a fresh sight of spontaneous spin polarization in d 0 magnetism. The much stronger ferromagnetic coupling in c-plane of AlN means that it is feasible to realize long-range ferromagnetic order via monolayer delta-doping. This can apply to other wide band-gap semiconductors in wurtzite structure.

Efficient photoelectrochemical water splitting by a doping-controlled GaN photoanode coated with NiO cocatalyst

International Nuclear Information System (INIS)

Kang, Jin-Ho; Kim, Soo Hee; Ebaid, Mohamed; Lee, June Key; Ryu, Sang-Wan

2014-01-01

Efficient photoelectrochemical (PEC) water splitting was demonstrated by a doping-controlled GaN photoanode coated with NiO cocatalyst. Highly doped n-GaN was sandwiched between undoped GaN layers to effectively collect electrons through ohmic contact. With zero external bias, the photocurrent density of the optimized doping profile was ∼3.5 times higher than that of the undoped GaN reference. However, the increased doping concentration degraded the photoanode stability, which was attributed to crystalline defects generated in the highly doped n-GaN. NiO cocatalyst improved the long-term stability of the photoanode because of GaN/NiO band alignment, enhancing hole transport into NiO and suppressing PEC corrosion mediated by hole crowding in GaN. This work established a design strategy for increasing the photocurrent as well as improving stability during water splitting with a GaN-based photoanode

Using MEMS Capacitive Switches in Tunable RF Amplifiers

OpenAIRE

Danson John; Plett Calvin; Tait Niall

2006-01-01

A MEMS capacitive switch suitable for use in tunable RF amplifiers is described. A MEMS switch is designed, fabricated, and characterized with physical and RF measurements for inclusion in simulations. Using the MEMS switch models, a dual-band low-noise amplifier (LNA) operating at GHz and GHz, and a tunable power amplifier (PA) at GHz are simulated in m CMOS. MEMS switches allow the LNA to operate with 11 dB of isolation between the two bands while maintaining dB of gain and sub- dB no...

Design and 3D simulation of a two-cavity wide-gap relativistic klystron amplifier with high power injection

Science.gov (United States)

Bai, Xianchen; Yang, Jianhua; Zhang, Jiande

2012-08-01

By using an electromagnetic particle-in-cell (PIC) code, an S-band two-cavity wide-gap klystron amplifier (WKA) loaded with washers/rods structure is designed and investigated for high power injection application. Influences of the washers/rods structure on the high frequency characteristics and the basic operation of the amplifier are presented. Generally, the rod structure has great impacts on the space-charge potential depression and the resonant frequency of the cavities. Nevertheless, if only the resonant frequency is tuned to the desired operation frequency, effects of the rod size on the basic operation of the amplifier are expected to be very weak. The 3-dimension (3-D) PIC simulation results show an output power of 0.98 GW corresponding to an efficiency of 33% for the WKA, with a 594 keV, 5 kA electron beam guided by an external magnetic field of 1.5 Tesla. Moreover, if a conductive plane is placed near the output gap, such as the electron collector, the beam potential energy can be further released, and the RF power can be increased to about 1.07 GW with the conversion efficiency of about 36%.

Design and 3D simulation of a two-cavity wide-gap relativistic klystron amplifier with high power injection

Energy Technology Data Exchange (ETDEWEB)

Bai Xianchen; Yang Jianhua; Zhang Jiande [College of Optoelectronic Science and Engineering, National University of Defense Technology, Changsha 410073 (China)

2012-08-15

By using an electromagnetic particle-in-cell (PIC) code, an S-band two-cavity wide-gap klystron amplifier (WKA) loaded with washers/rods structure is designed and investigated for high power injection application. Influences of the washers/rods structure on the high frequency characteristics and the basic operation of the amplifier are presented. Generally, the rod structure has great impacts on the space-charge potential depression and the resonant frequency of the cavities. Nevertheless, if only the resonant frequency is tuned to the desired operation frequency, effects of the rod size on the basic operation of the amplifier are expected to be very weak. The 3-dimension (3-D) PIC simulation results show an output power of 0.98 GW corresponding to an efficiency of 33% for the WKA, with a 594 keV, 5 kA electron beam guided by an external magnetic field of 1.5 Tesla. Moreover, if a conductive plane is placed near the output gap, such as the electron collector, the beam potential energy can be further released, and the RF power can be increased to about 1.07 GW with the conversion efficiency of about 36%.

Design and 3D simulation of a two-cavity wide-gap relativistic klystron amplifier with high power injection

International Nuclear Information System (INIS)

Bai Xianchen; Yang Jianhua; Zhang Jiande

2012-01-01

By using an electromagnetic particle-in-cell (PIC) code, an S-band two-cavity wide-gap klystron amplifier (WKA) loaded with washers/rods structure is designed and investigated for high power injection application. Influences of the washers/rods structure on the high frequency characteristics and the basic operation of the amplifier are presented. Generally, the rod structure has great impacts on the space-charge potential depression and the resonant frequency of the cavities. Nevertheless, if only the resonant frequency is tuned to the desired operation frequency, effects of the rod size on the basic operation of the amplifier are expected to be very weak. The 3-dimension (3-D) PIC simulation results show an output power of 0.98 GW corresponding to an efficiency of 33% for the WKA, with a 594 keV, 5 kA electron beam guided by an external magnetic field of 1.5 Tesla. Moreover, if a conductive plane is placed near the output gap, such as the electron collector, the beam potential energy can be further released, and the RF power can be increased to about 1.07 GW with the conversion efficiency of about 36%.

Ka-Band Slot-Microstrip-Covered and Waveguide-Cavity-Backed Monopulse Antenna Array

Directory of Open Access Journals (Sweden)

Li-Ming Si

2014-01-01

Full Text Available A slot-microstrip-covered and waveguide-cavity-backed monopulse antenna array is proposed for high-resolution tracking applications at Ka-band. The monopulse antenna array is designed with a microstrip with 2×32 slots, a waveguide cavity, and a waveguide monopulse comparator, to make the structure simple, reduce the feeding network loss, and increase the frequency bandwidth. The 2×32 slot-microstrip elements are formed by a metal clad dielectric substrate and slots etched in the metal using the standard printed circuit board (PCB process with dimensions of 230 mm  ×  10 mm. The proposed monopulse antenna array not only maintains the advantages of the traditional waveguide slot antenna array, but also has the characteristics of wide bandwidth, high consistence, easy of fabrication, and low cost. From the measured results, it exhibits good monopulse characteristics, including the following: the maximum gains of sum pattern are greater than 24 dB, the 3 dB beamwidth of sum pattern is about 2.2 degrees, the sidelobe levels of the sum pattern are less than −18 dB, and the null depths of the difference pattern are less than −25 dB within the operating bandwidth between 33.65 GHz and 34.35 GHz for VSWR ≤ 2.

Study of Cs adsorption on (100) surface of [001]-oriented GaN nanowires: A first principle research

Energy Technology Data Exchange (ETDEWEB)

Xia, Sihao [Department of Optoelectronic Technology, School of Electronic and Optical Engineering, Nanjing University of Science and Technology Nanjing, 210094 (China); Liu, Lei, E-mail: liu1133_cn@sina.com.cn [Department of Optoelectronic Technology, School of Electronic and Optical Engineering, Nanjing University of Science and Technology Nanjing, 210094 (China); Kong, Yike [Department of Optoelectronic Technology, School of Electronic and Optical Engineering, Nanjing University of Science and Technology Nanjing, 210094 (China); Wang, Honggang; Wang, Meishan [School of Information and Electrical Engineering, Ludong University, Yantai 264025 (China)

2016-11-30

Highlights: • B{sub N} is the most stable adsorption site. • Work function is reduced after Cs adsorption. • Surface atomic structures are reconstructed. • Surface states near fermi level is contributed to the hybridization of Cs 5s state with Ga 4p and N 2p state. • NEA surface is demonstrated after Cs adsorption on GaN nanowire surface. - Abstract: Based on first-principle study, the adsorption mechanism of Cs on (100) crystal plane of GaN nanowire surface with coverage of 1/12 monolayer is explored. It is discovered that the most stable adsorption site is B{sub N} because of its lowest adsorption energy. The work function of GaN nanowire surface is reduced by 1.69 eV and will be further reduced with increasing Cs adsorption, which promotes the development of negative electron affinity (NEA) state of the materials. Furthermore, Cs adatom will make a great influence on the surface atomic structure, oppositely, little influence on the center atomic structure. There appears a dipole moment valued −6.93 Debye on the nanowire surface contributed to the formation the heterojunction on the surface, which is beneficial to the photoelectrons liberation. After Cs adsorption, the valence band and conduction band both move to lower energy side. The surface states mainly result from the hybridization of Cs 5s state with Ga 4p state and N 2p state. This study can help us to further experiment on the Cs adsorption processing on GaN nanowire and improve the photoemission performance of GaN nanowire devices.

Study of Cs adsorption on (100) surface of [001]-oriented GaN nanowires: A first principle research

International Nuclear Information System (INIS)

Xia, Sihao; Liu, Lei; Kong, Yike; Wang, Honggang; Wang, Meishan

2016-01-01

Highlights: • B N is the most stable adsorption site. • Work function is reduced after Cs adsorption. • Surface atomic structures are reconstructed. • Surface states near fermi level is contributed to the hybridization of Cs 5s state with Ga 4p and N 2p state. • NEA surface is demonstrated after Cs adsorption on GaN nanowire surface. - Abstract: Based on first-principle study, the adsorption mechanism of Cs on (100) crystal plane of GaN nanowire surface with coverage of 1/12 monolayer is explored. It is discovered that the most stable adsorption site is B N because of its lowest adsorption energy. The work function of GaN nanowire surface is reduced by 1.69 eV and will be further reduced with increasing Cs adsorption, which promotes the development of negative electron affinity (NEA) state of the materials. Furthermore, Cs adatom will make a great influence on the surface atomic structure, oppositely, little influence on the center atomic structure. There appears a dipole moment valued −6.93 Debye on the nanowire surface contributed to the formation the heterojunction on the surface, which is beneficial to the photoelectrons liberation. After Cs adsorption, the valence band and conduction band both move to lower energy side. The surface states mainly result from the hybridization of Cs 5s state with Ga 4p state and N 2p state. This study can help us to further experiment on the Cs adsorption processing on GaN nanowire and improve the photoemission performance of GaN nanowire devices.

A novel GaN HEMT with double recessed barrier layer for high efficiency-energy applications

Science.gov (United States)

Jia, Hujun; Luo, Yehui; Wu, Qiuyuan; Yang, Yintang

2017-11-01

In this paper, a novel GaN HEMT with high efficiency-energy characteristic is proposed. Different from the conventional structure, the proposed structure contains double recessed barriers layer (DRBL) beside the gate. The key idea in this work is to improve the microwave output characteristics. The simulated results show that the drain saturation current and peak transconductance of DRBL GaN HEMT is slightly decreased, the transconductance saturation flatness is increased by 0.5 V and the breakdown voltage is also enhanced too. Due to the both recessed barrier layer, the gate-drain/gate-source capacitance is decreased by 6.3% and 11.3%, respectively. The RF simulated results show that the maximum oscillation frequency for DRBL GaN HEMT is increased from 57 GHz to 64 GHz and the saturation power density is 8.7 W/mm at 600 MHz, 6.9 W/mm at 1200 MHz with the higher power added efficiency (PAE). Further investigation show that DRBL GaN HEMT can achieve to 6.4 W/mm and the maximum PAE 83.8% at 2400 MHz. Both are higher than the 5.0 W/mm and 80.3% for the conventional structure. When the operating frequency increases to X band, the DRBL GaN HEMT still exhibits the superior output performances. All the results show that the advantages and the potential capacities of DRBL GaN HEMT at high efficiency-energy are greater than the conventional GaN HEMT.

Stability analysis of a coaxial-waveguide gyrotron traveling-wave amplifier

International Nuclear Information System (INIS)

Hung, C.L.; Yeh, Y.S.

2005-01-01

The gyrotron traveling-wave tube (gyro-TWT) amplifier is known to be highly susceptible to spurious oscillations. This study develops a simulation approach to analyze the stability of a coaxial-waveguide gyro-TWT with distributed wall losses. The interplay among the absolute instabilities, the gyrotron backward-wave oscillations, and the circuit parameters is analyzed. Simulation results reveal that the distributed wall losses effectively stabilize spurious oscillations in the coaxial gyro-TWT. Furthermore, the wall resistivity of the center conductor is shown to be an additional effective mechanism for suppressing oscillations. Under stable operation conditions, the coaxial gyro-TWT with distributed losses is predicted to generate 435 kW in the Ka band with 31% efficiency, a saturated gain of 45 dB, and a bandwidth of 1.86 GHz (≅5.8%) for a 70 kV, 20 A electron beam with an α(=ν perpendicular )/ν z )=1.0 and an axial velocity spread of Δν z /ν z =5%

Photocurrent characteristics of metal–AlGaN/GaN Schottky-on-heterojunction diodes induced by GaN interband excitation

Science.gov (United States)

Tang, Xi; Li, Baikui; Chen, Kevin J.; Wang, Jiannong

2018-05-01

The photocurrent characteristics of metal–AlGaN/GaN Schottky-on-heterojunction diodes were investigated. When the photon energy of incident light was larger than the bandgap of GaN but smaller than that of AlGaN, the alternating-current (ac) photocurrent measured using lock-in techniques increased with the chopper frequency. Analyzing the generation and flow processes of photocarriers revealed that the photocurrent induced by GaN interband excitation featured a transient behavior, and its direction reversed when the light excitation was removed. The abnormal dependence of the measured ac photocurrent magnitude on the chopper frequency was explained considering the detection principles of a lock-in amplifier.

Reverberation Mapping of the Kepler target KA1858+48

Science.gov (United States)

Pei, Liuyi; Barth, A. J.; Malkan, M. A.; Cenko, S. B.; Clubb, K. I.; Filippenko, A. V.; Gates, E. L.; Horst, J.; Joner, M. D.; Leonard, D. C.; Sand, D. J.

2013-01-01

KA1858+48 is a Seyfert 1 galaxy at redshift 0.078 and is among the brightest active galaxies being monitored by the Kepler mission. We have carried out a reverberation mapping program designed to measure the broad-line region size and estimate the mass of the black hole in KA1858+48. We obtained spectroscopic data using the Kast Spectrograph at the Lick 3 m telescope during dark runs from late winter through fall of 2012, by requesting an observation on each night that the Kast Spectrograph was mounted on the telescope. We also obtained V-band images from the Nickel 1 m telescope at Lick Observatory, the 0.9 m telescope at Brigham Young University West Mountain Observatory, the Faulkes Telescope North at the Las Cumbres Observatory Global Telescope, the KAIT telescope at Lick Observatory, and the 1 m telescope at Mt. Laguna Observatory. The H-beta light curve shows a lag time of approximately 12 days with respect to the V-band continuum flux variations. We will present the continuum and emission-line light curves, cross-correlation lag measurements, and a preliminary estimate of the black hole mass in KA1858+48.

A study of the red-shift of a neutral donor bound exciton in GaN nanorods by hydrogenation.

Science.gov (United States)

Park, Byung-Guon; Lee, Sang-Tae; Reddeppa, Maddaka; Kim, Moon-Deock; Oh, Jae-Eung; Lee, Sang-Kwon

2017-09-08

In this paper we account for the physics behind the exciton peak shift in GaN nanorods (NRs) due to hydrogenation. GaN NRs were selectively grown on a patterned Ti/Si(111) substrate using plasma-assisted molecular beam epitaxy, and the effect of hydrogenation on their optical properties was investigated in detail using low-temperature photoluminescence measurements. Due to hydrogenation, the emissions corresponding to the donor-acceptor pair and yellow luminescence in GaN NRs were strongly suppressed, while the emission corresponding to the neutral to donor bound exciton (D 0 X) exhibited red-shift. Thermal annealing of hydrogenated GaN NRs demonstrated the recovery of the D 0 X and deep level emission. To determine the nature of the D 0 X peak shift due to hydrogenation, comparative studies were carried out on various diameters of GaN NRs, which can be controlled by different growth conditions and wet-etching times. Our experimental results reveal that the D 0 X shift depends on the diameter of the GaN NRs after hydrogenation. The results clearly demonstrate that the hydrogenation leads to band bending of GaN NRs as compensated by hydrogen ions, which causes a red-shift in the D 0 X emission.

A study of the red-shift of a neutral donor bound exciton in GaN nanorods by hydrogenation

Science.gov (United States)

Park, Byung-Guon; Lee, Sang-Tae; Reddeppa, Maddaka; Kim, Moon-Deock; Oh, Jae-Eung; Lee, Sang-Kwon

2017-09-01

In this paper we account for the physics behind the exciton peak shift in GaN nanorods (NRs) due to hydrogenation. GaN NRs were selectively grown on a patterned Ti/Si(111) substrate using plasma-assisted molecular beam epitaxy, and the effect of hydrogenation on their optical properties was investigated in detail using low-temperature photoluminescence measurements. Due to hydrogenation, the emissions corresponding to the donor-acceptor pair and yellow luminescence in GaN NRs were strongly suppressed, while the emission corresponding to the neutral to donor bound exciton (D0X) exhibited red-shift. Thermal annealing of hydrogenated GaN NRs demonstrated the recovery of the D0X and deep level emission. To determine the nature of the D0X peak shift due to hydrogenation, comparative studies were carried out on various diameters of GaN NRs, which can be controlled by different growth conditions and wet-etching times. Our experimental results reveal that the D0X shift depends on the diameter of the GaN NRs after hydrogenation. The results clearly demonstrate that the hydrogenation leads to band bending of GaN NRs as compensated by hydrogen ions, which causes a red-shift in the D0X emission.

Modeling of Wide-Band-Gap Semiconductor Alloys

National Research Council Canada - National Science Library

Lambrecht, W

1998-01-01

.... The band structure and the total energy properties of LiGaO2 were studied in relation to its possible role as a substrate for GaN growth and as a model system for cation ordering on wurtzite based lattices...

On the Performance of Adaptive Data Rate over Deep Space Ka-Bank Link: Case Study Using Kepler Data

Science.gov (United States)

Gao, Jay L.

2016-01-01

Future missions envisioned for both human and robotic exploration demand increasing communication capacity through the use of Ka-band communications. The Ka-band channel, being more sensitive to weather impairments, presents a unique trade-offs between data storage, latency, data volume and reliability. While there are many possible techniques for optimizing Ka-band operations such as adaptive modulation and coding and site-diversity, this study focus exclusively on the use of adaptive data rate (ADR) to achieve significant improvement in the data volume-availability tradeoff over a wide range of link distances for near Earth and Mars exploration. Four years of Kepler Ka-band downlink symbol signal-to-noise (SNR) data reported by the Deep Space Network were utilized to characterize the Ka-band channel statistics at each site and conduct various what-if performance analysis for different link distances. We model a notional closed-loop adaptive data rate system in which an algorithm predicts the channel condition two-way light time (TWLT) into the future using symbol SNR reported in near-real time by the ground receiver and determines the best data rate to use. Fixed and adaptive margins were used to mitigate errors in channel prediction. The performance of this closed-loop adaptive data rate approach is quantified in terms of data volume and availability and compared to the actual mission configuration and a hypothetical, optimized single rate configuration assuming full a priori channel knowledge.

Beryllium doped p-type GaN grown by metal-organic chemical vapor depostion

International Nuclear Information System (INIS)

Al-Tahtamouni, T.M.; Sedhain, A.; Lin, J.Y.; Jiang, H.X.

2010-01-01

The authors report on the growth of Be-doped p-type GaN epilayers by metal-organic chmical vapor deposition (MOCVD). The electrical and optical properties of the Be-doped GaN epilayers were studied by Hall-effect measurements and photoluminescence (PL) spectroscopy. The PL spectra of Be-doped GaN epilayers ethibited two emission lines at 3.36 and 2.71 eV, which were obsent in undoped epilayers. The transition at 3.36 eV was at 3.36 and 2.71eV, which were absent in undoped epilayers. The transition at 3.36 eV was assigned to the transition of free electrons to the neutral Be acceptor Be d eg.. The transition at 2.71 eV was assigned to the transition of electrons bound to deep level donors to the Be d eg. acceptors. Three independent measurements: (a) resistivity vs. temperature, (b) PL peak positions between Be doped and undoped GaN and (c) activation energy of 2.71 eV transition all indicate that the Be energy level is between 120 and 140 meV above the valence band. This is about 20-40 meV shallower than the Mg energy level (160 meV) in GaN. It is thus concluded that Be could be an excellent acceptor dopant in nitride materials. (authors).

Defect analysis in GaN films of HEMT structure by cross-sectional cathodoluminescence

Science.gov (United States)

Isobe, Yasuhiro; Hung, Hung; Oasa, Kohei; Ono, Tasuku; Onizawa, Takashi; Yoshioka, Akira; Takada, Yoshiharu; Saito, Yasunobu; Sugiyama, Naoharu; Tsuda, Kunio; Sugiyama, Toru; Mizushima, Ichiro

2017-06-01

Defect analysis of GaN films in high electron mobility transistor (HEMT) structures by cross-sectional cathodoluminescence (X-CL) is demonstrated as a useful technique for improving the current collapse of GaN-HEMT devices, and the relationship between crystal quality and device characteristics is also investigated. The crystal quality of intrinsic-GaN (i-GaN) and carbon-doped GaN produced clearly different peak intensities of blue luminescence (BL), yellow luminescence (YL), and band-edge emission (BE), which is independently detected by X-CL. Current collapse in GaN-HEMT devices is found to be determined by the BL/BE and YL/BE ratios at the top of the i-GaN layer, which is close to the channel. Moreover, the i-GaN thickness required in order to minimize the BL/BE and YL/BE ratios and the thickness dependency of GaN for minimizing the BL/BE and YL/BE ratios depending on the growth conditions can be evaluated by X-CL. However, there is no correlation between current collapse in GaN-HEMT devices and the YL/BE ratio by conventional photoluminescence because HEMT devices consist of multiple GaN layers and the YL signal is detected from the carbon-doped GaN layer. Thus, the X-CL analysis method is a useful technique for device design in order to suppress current collapse.

Surface States Effect on the Large Photoluminescence Redshift in GaN Nanostructures

KAUST Repository

Ben Slimane, Ahmed

2013-01-01

We report on the large photoluminescence redshift observed in nanostructures fabricated using n-type GaN by ultraviolet (UV) metal-assisted electroless chemical-etching method. The scanning electron microscopy (SEM) characterization showed nanostructures with size dispersion ranging from 10 to 100 nm. We observed the crystalline structure using high resolution transmission electron microscopy (HRTEM) and electron energy loss (EELS) techniques. In contrast to 362 nm UV emission from the GaN epitaxy, the nanostructures emitted violet visible-light in photoluminescence (PL) characterization with increasing optical excitation. An energy band model was presented to shed light on the large PL redshift under the influence of surface states, which resulted in two competing photoluminescence mechanisms depending on excitation conditions.

Influence of growth temperature and temperature ramps on deep level defect incorporation in m-plane GaN

International Nuclear Information System (INIS)

Armstrong, A. M.; Kelchner, K.; Nakamura, S.; DenBaars, S. P.; Speck, J. S.

2013-01-01

The dependence of deep level defect incorporation in m-plane GaN films grown by metal-organic chemical vapor deposition on bulk m-plane GaN substrates as a function of growth temperature (T g ) and T g ramping method was investigated using deep level optical spectroscopy. Understanding the influence of T g on GaN deep level incorporation is important for InGaN/GaN multi-quantum well (MQW) light emitting diodes (LEDs) and laser diodes (LDs) because GaN quantum barrier (QB) layers are grown much colder than thin film GaN to accommodate InGaN QW growth. Deep level spectra of low T g (800 °C) GaN films grown under QB conditions were compared to deep level spectra of high T g (1150 °C) GaN. Reducing T g , increased the defect density significantly (>50×) through introduction of emergent deep level defects at 2.09 eV and 2.9 eV below the conduction band minimum. However, optimizing growth conditions during the temperature ramp when transitioning from high to low T g substantially reduced the density of these emergent deep levels by approximately 40%. The results suggest that it is important to consider the potential for non-radiative recombination in QBs of LED or LD active regions, and tailoring the transition from high T g GaN growth to active layer growth can mitigate such non-radiative channels

In situ synthesis and characterization of GaN nanorods through thermal decomposition of pre-grown GaN films

International Nuclear Information System (INIS)

Yan, P; Qin, D; An, Y K; Li, G Z; Xing, J; Liu, J J

2008-01-01

Herein we describe a thermal treatment route to synthesize gallium nitride (GaN) nanorods. In this method, GaN nanorods were synthesized by thermal treatment of GaN films at a temperature of 800 deg. C. The morphology and structure of GaN nanorods were characterized by scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The results show that GaN nanorods have a hexagonal wurtzite structure with diameters ranging from 30 to 50 nm. Additionally, GaN nanoplates are also founded in the products. The growth process of GaN nanostructures was investigated and a thermal decomposition mechanism was proposed. Our method provides a cost-effective route to fabricate GaN nanorods, which will benefit the fabrication of one-dimensional nanomaterials and device applications

Characterization of GaN P-N Junction Grown on Si (111) Substrate by Plasma-assisted Molecular Beam Epitaxy

International Nuclear Information System (INIS)

Rosfariza Radzali; Rosfariza Radzali; Mohd Anas Ahmad; Zainuriah Hassan; Norzaini Zainal; Kwong, Y.F.; Woei, C.C.; Mohd Zaki Mohd Yusoff; Mohd Zaki Mohd Yusoff

2011-01-01

In this report, the growth of GaN pn junction on Si (111) substrate by plasma assisted molecular beam epitaxy (PAMBE) is presented. Doping of GaN p-n junction has been carried out using Si and Mg as n-type dopant and p-type dopants, respectively. The sample had been characterized by PL, Raman spectroscopy, HR-XRD and SEM. PL spectrum showed strong band edge emission of GaN at ∼364 nm, indicating good quality of the sample. The image of SEM cross section of the sample showed sharp interfaces. The presence of peak ∼657 cm -1 in Raman measurement exhibited successful doping of Mg in the sample. (author)

Optical properties of C-doped bulk GaN wafers grown by halide vapor phase epitaxy

International Nuclear Information System (INIS)

Khromov, S.; Hemmingsson, C.; Monemar, B.; Hultman, L.; Pozina, G.

2014-01-01

Freestanding bulk C-doped GaN wafers grown by halide vapor phase epitaxy are studied by optical spectroscopy and electron microscopy. Significant changes of the near band gap (NBG) emission as well as an enhancement of yellow luminescence have been found with increasing C doping from 5 × 10 16 cm −3 to 6 × 10 17 cm −3 . Cathodoluminescence mapping reveals hexagonal domain structures (pits) with high oxygen concentrations formed during the growth. NBG emission within the pits even at high C concentration is dominated by a rather broad line at ∼3.47 eV typical for n-type GaN. In the area without pits, quenching of the donor bound exciton (DBE) spectrum at moderate C doping levels of 1–2 × 10 17 cm −3 is observed along with the appearance of two acceptor bound exciton lines typical for Mg-doped GaN. The DBE ionization due to local electric fields in compensated GaN may explain the transformation of the NBG emission

Impact of GaN transition layers in the growth of GaN epitaxial layer on silicon

International Nuclear Information System (INIS)

Zhao Danmei; Zhao Degang; Jiang Desheng; Liu Zongshun; Zhu Jianjun; Chen Ping; Liu Wei; Li Xiang; Shi Ming

2015-01-01

A method for growing GaN epitaxial layer on Si (111) substrate is investigated. Due to the large lattice mismatch between GaN and AlN, GaN grown directly above an AlN buffer layer on the Si substrate turns out to be of poor quality. In this study, a GaN transition layer is grown additionally on the AlN buffer before the GaN epitaxial growth. By changing the growth conditions of the GaN transition layer, we can control the growth and merging of islands and control the transfer time from 3D to 2D growth mode. With this method, the crystalline quality of the GaN epitaxial layer can be improved and the crack density is reduced. Here, we have investigated the impact of a transition layer on the crystalline quality and stress evolution of a GaN epitaxial layer with methods of X-ray diffraction, optical microscopy and in situ reflectivity trace. With the increasing thickness of transition layer, the crack decreases and the crystalline quality is improved. But when the transition layer exceeds a critical thickness, the crystalline quality of the epilayer becomes lower and the crack density increases. (paper)

The effect of Ga vacancies on the defect and magnetic properties of Mn-doped GaN

International Nuclear Information System (INIS)

Kang, Joongoo; Chang, K. J.

2007-01-01

We perform first-principles theoretical calculations to investigate the effect of the presence of Ga vacancy on the defect and magnetic properties of Mn-doped GaN. When a Ga vacancy (V Ga ) is introduced to the Mn ions occupying the Ga lattice sites, a charge transfer occurs from the Mn d band to the acceptor levels of V Ga , and strong Mn-N bonds are formed between the Mn ion and the N atoms in the neighborhood of V Ga . The charge transfer and chemical bonding effects significantly affect the defect and magnetic properties of Mn-doped GaN. In a Mn-V Ga complex, which consists of a Ga vacancy and one Mn ion, the dangling bond orbital of the N atom involved in the Mn-N bond is electrically deactivated, and the remaining dangling bond orbitals of V Ga lead to the shallowness of the defect level. When a Ga vacancy forms a complex with two Mn ions located at a distance of about 6 A, which corresponds to the percolation length in determining the Curie temperature in diluted Mn-doped GaN, the Mn d band is broadened and the density of states at the Fermi level is reduced due to two strong Mn-N bonds. Although the broadening and depopulation of the Mn d band weaken the ferromagnetic stability between the Mn ions, the ferromagnetism is still maintained because of the lack of antiferromagnetic superexchange interactions at the percolation length

Formation of Ga2O3 by the oxidation of p-type GaN thin films

Energy Technology Data Exchange (ETDEWEB)

Pinnisch, Melanie; Reppin, Daniel; Stehr, Jan; Laufer, Andreas; Hofmann, Detlev M.; Meyer, Bruno K. [1. Physikalisches Institut, Justus-Liebig-University, Giessen (Germany)

2010-07-01

Both GaN and Ga{sub 2}O{sub 3} are wide band gap semiconductors with energies of 3.45 eV and 4.9 eV, respectively. While GaN can be achieved p- or n-type conducting by doping, Ga{sub 2}O{sub 3} is n-type or high resistive dependent on the presence of oxygen vacancies. We studied the conversion of p-type Mg doped GaN thin films to Ga{sub 2}O{sub 3} by thermal treatments in the temperature range from 600 C to 1200 C and in different atmospheres. Changes of the film properties were studied by means of X-ray diffraction, photo-electron spectroscopy and atomic force microscopy. Optical and magnetic resonance methods were used to investigate the evolution of the dopands and defects.

Polarization of stacking fault related luminescence in GaN nanorods

Directory of Open Access Journals (Sweden)

G. Pozina

2017-01-01

Full Text Available Linear polarization properties of light emission are presented for GaN nanorods (NRs grown along [0001] direction on Si(111 substrates by direct-current magnetron sputter epitaxy. The near band gap photoluminescence (PL measured at low temperature for a single NR demonstrated an excitonic line at ∼3.48 eV and the stacking faults (SFs related transition at ∼3.43 eV. The SF related emission is linear polarized in direction perpendicular to the NR growth axis in contrast to a non-polarized excitonic PL. The results are explained in the frame of the model describing basal plane SFs as polymorphic heterostructure of type II, where anisotropy of chemical bonds at the interfaces between zinc blende and wurtzite GaN subjected to in-built electric field is responsible for linear polarization parallel to the interface planes.

Atomic force microscopy studies of homoepitaxial GaN layers grown on GaN template by laser MBE

Energy Technology Data Exchange (ETDEWEB)

Choudhary, B. S. [CSIR-National Physical Laboratory, Dr K.S. Krishnan Road, New Delhi 110012 (India); Rajasthan Technical University, Rawatbhata Road, Kota 324010 (India); Singh, A.; Tyagi, P. K. [Department of Applied Physics, Delhi Technological University, Delhi 110042 (India); Tanwar, S. [Rajasthan Technical University, Rawatbhata Road, Kota 324010 (India); Kumar, M. Senthil; Kushvaha, S. S., E-mail: kushvahas@nplindia.org [CSIR-National Physical Laboratory, Dr K.S. Krishnan Road, New Delhi 110012 (India)

2016-04-13

We have grown homoepitaxial GaN films on metal organic chemical vapor deposition (MOCVD) grown 3.5 µm thick GaN on sapphire (0001) substrate (GaN template) using an ultra-high vacuum (UHV) laser assisted molecular beam epitaxy (LMBE) system. The GaN films were grown by laser ablating a polycrystalline solid GaN target in the presence of active r.f. nitrogen plasma. The influence of laser repetition rates (10-30 Hz) on the surface morphology of homoepitaxial GaN layers have been studied using atomic force microscopy. It was found that GaN layer grown at 10 Hz shows a smooth surface with uniform grain size compared to the rough surface with irregular shape grains obtained at 30 Hz. The variation of surface roughness of the homoepitaxial GaN layer with and without wet chemical etching has been also studied and it was observed that the roughness of the film decreased after wet etching due to the curved structure/rough surface.

Gain flattened L-band EDFA based on upgraded C-band EDFA using forward ASE pumping in an EDF section

DEFF Research Database (Denmark)

Buxens Azcoaga, Alvaro Juan; Poulsen, Henrik Nørskov; Clausen, Anders

2000-01-01

A novel method is presented for implementing an L-band erbium doped fibre amplifier (EDFA) making use of forward amplified spontaneous emission pumping, from a commercially available c-band EDFA, in an erbium doped fibre. Tuning of the length of erbium doped fibre enables a flat gain characteristic...... to be obtained with a low noise figure over the entire L-band window....

Ultraviolet Laser SQUID Microscope for GaN Blue Light Emitting Diode Testing

International Nuclear Information System (INIS)

Daibo, M; Kamiwano, D; Kurosawa, T; Yoshizawa, M; Tayama, N

2006-01-01

We carried out non-contacting measurements of photocurrent distributions in GaN blue light emitting diode (LED) chips using our newly developed ultraviolet (UV) laser SQUID microscope. The UV light generates the photocurrent, and then the photocurrent induces small magnetic fields around the chip. An off-axis arranged HTS-SQUID magnetometer is employed to detect a vector magnetic field whose typical amplitude is several hundred femto-tesla. Generally, it is difficult to obtain Ohmic contacts for p-type GaN because of the low hole concentration in the p-type epitaxial layer and the lack of any available metal with a higher work function compared with the p-type GaN. Therefore, a traditional probecontacted electrical test is difficult to conduct for wide band gap semiconductors without an adequately annealed electrode. Using the UV-laser SQUID microscope, the photocurrent can be measured without any electrical contact. We show the photocurrent vector map which was reconstructed from measured magnetic fields data. We also demonstrate how we found the position of a defect of the electrical short circuits in the LED chip

P-type surface effects for thickness variation of 2um and 4um of n-type layer in GaN LED

Science.gov (United States)

Halim, N. S. A. Abdul; Wahid, M. H. A.; Hambali, N. A. M. Ahmad; Rashid, S.; Ramli, M. M.; Shahimin, M. M.

2017-09-01

The internal quantum efficiency of III-Nitrides group, GaN light-emitting diode (LED) has been considerably limited due to the insufficient hole injection and this is caused by the lack of performance p-type doping and low hole mobility. The low hole mobility makes the hole less energetic, thus reduced the performance operation of GaN LED itself. The internal quantum efficiency of GaN-based LED with surface roughness (texture) can be changed by texture size, density, and thickness of GaN film or by the combined effects of surface shape and thickness of GaN film. Besides, due to lack of p-type GaN, attempts to look forward the potential of GaN LED relied on the thickness of n-type layer and surface shape of p-type GaN layer. This work investigates the characteristics of GaN LED with undoped n-GaN layer of different thickness and the surface shape of p-type layer. The LEDs performance is significantly altered by modifying the thickness and shape. Enhancement of n-GaN layer has led to the annihilation of electrical conductivity of the chip. Different surface geometry governs the emission rate extensively. Internal quantum efficiency is also predominantly affected by the geometry of n-GaN layer which subjected to the current spreading. It is recorded that the IQE droop can be minimized by varying the thickness of the active layer without amplifying the forward voltage. Optimum forward voltage (I-V), total emission rate relationship with the injected current and internal quantum efficiency (IQE) for 2,4 µm on four different surfaces of p-type layer are also reported in this paper.

Ka-Band, MEMS Switched Line Phase Shifters Implemented in Finite Ground Coplanar Waveguide

Science.gov (United States)

Scardelletti, Maximilian C.; Ponchak, George E.; Varaljay, Nicholas C.

2005-01-01

Ka-band MEMS switched line phase shifters implemented in finite ground coplanar waveguide are described in this paper. The phase shifters are constructed of single-pole double-throw (SPDT) switches with additional reference and phase offset transmission line lengths. The one- and two-bit phase shifters are fabricated on high resistivity (HR) silicon with a dielectric constant, Epsilon(sub T) = 11.7 and a substrate thickness, t = 500microns. The switching architectures integrated within the phase shifters consist of MEMS switches that are doubly anchored cantilever beam capacitive switches with additional high inductive sections (MEMS LC device). The SPDT switch is composed of a T-junction with a MEMS LC device at each output port. The one-bit phase shifter described in this paper has an insertion loss (IL) and return loss (RL) of 0.9 dB and 30 dB while the two-bit described has an IL and RL of 1.8 dB and 30 dB respectively. The one-bit phase shifter's designed offset phase is 22.5deg and actual measured phase shift is 21.8deg. The two-bit phase shifter's designed offset phase is 22.5deg, 45deg, and 67.5deg and the actual measured phase shifts are 21.4deg, 44.2deg, and 65.8deg, respectively.

Growth of GaN on SiC/Si substrates using AlN buffer layer by hot-mesh CVD

International Nuclear Information System (INIS)

Tamura, Kazuyuki; Kuroki, Yuichiro; Yasui, Kanji; Suemitsu, Maki; Ito, Takashi; Endou, Tetsuro; Nakazawa, Hideki; Narita, Yuzuru; Takata, Masasuke; Akahane, Tadashi

2008-01-01

GaN films were grown on SiC/Si (111) substrates by hot-mesh chemical vapor deposition (CVD) using ammonia (NH 3 ) and trimetylgallium (TMG) under low V/III source gas ratio (NH 3 /TMG = 80). The SiC layer was grown by a carbonization process on the Si substrates using propane (C 3 H 8 ). The AlN layer was deposited as a buffer layer using NH 3 and trimetylaluminum (TMA). GaN films were formed and grown by the reaction between NH x radicals, generated on a tungsten hot mesh, and the TMG molecules. The GaN films with the AlN buffer layer showed better crystallinity and stronger near-band-edge emission compared to those without the AlN layer

Spectroscopic and magnetic properties of Mn doped GaN epitaxial films grown by plasma assisted molecular beam epitaxy

International Nuclear Information System (INIS)

Vidyasagar, R.; Lin, Y.-T.; Tu, L.-W.

2012-01-01

Graphical abstract: We report here that micro-Raman scattering spectrum for Mn doped GaN thin film has displayed a new peak manifested at 578 cm −1 , by which it is attributed to interior LVM originated by the incorporation of Mn ions in place of Ga sites. Mn doped GaN thin film also showed the typical negative magnetoresistance up to ∼50 K, revealing that the film showed magnetic ordering of spins below 50 K. Display Omitted Highlights: ► GaN and Mn doped GaN single phase wurtzite structures grown by PAMBE. ► The phase purity of the epilayers investigated by HRXRD, HRSEM and EDX. ► The red shift in near band edge emission has been observed using micro-PL. ► A new peak related LVM at 578 cm −1 in micro-Raman scattering measurements confirmed Mn doped into GaN. ► Negative-magnetoresistance investigations have showed that the film has T c −1 , which is attributed to the vacancy-related local vibrational mode of Mn occupying the Ga site. Temperature dependent negative magnetoresistance measurements provide a direct evidence of magnetic ordering below 50 K for the Mn doped GaN thin film.

Using MEMS Capacitive Switches in Tunable RF Amplifiers

Directory of Open Access Journals (Sweden)

Danson John

2006-01-01

Full Text Available A MEMS capacitive switch suitable for use in tunable RF amplifiers is described. A MEMS switch is designed, fabricated, and characterized with physical and RF measurements for inclusion in simulations. Using the MEMS switch models, a dual-band low-noise amplifier (LNA operating at GHz and GHz, and a tunable power amplifier (PA at GHz are simulated in m CMOS. MEMS switches allow the LNA to operate with 11 dB of isolation between the two bands while maintaining dB of gain and sub- dB noise figure. MEMS switches are used to implement a variable matching network that allows the PA to realize up to 37% PAE improvement at low input powers.

Linearly polarized photoluminescence of anisotropically strained c-plane GaN layers on stripe-shaped cavity-engineered sapphire substrate

Science.gov (United States)

Kim, Jongmyeong; Moon, Daeyoung; Lee, Seungmin; Lee, Donghyun; Yang, Duyoung; Jang, Jeonghwan; Park, Yongjo; Yoon, Euijoon

2018-05-01

Anisotropic in-plane strain and resultant linearly polarized photoluminescence (PL) of c-plane GaN layers were realized by using a stripe-shaped cavity-engineered sapphire substrate (SCES). High resolution X-ray reciprocal space mapping measurements revealed that the GaN layers on the SCES were under significant anisotropic in-plane strain of -0.0140% and -0.1351% along the directions perpendicular and parallel to the stripe pattern, respectively. The anisotropic in-plane strain in the GaN layers was attributed to the anisotropic strain relaxation due to the anisotropic arrangement of cavity-incorporated membranes. Linearly polarized PL behavior such as the observed angle-dependent shift in PL peak position and intensity comparable with the calculated value based on k.p perturbation theory. It was found that the polarized PL behavior was attributed to the modification of valence band structures induced by anisotropic in-plane strain in the GaN layers on the SCES.

Z L GAN

Indian Academy of Sciences (India)

Z L GAN. Articles written in Sadhana. Volume 43 Issue 4 April 2018 pp 59. Effect of scale size, orientation type and dispensing method on void formation in the CUF encapsulation of BGA · AIZAT ABAS FEI CHONG NG Z L GAN M H H ISHAK M Z ABDULLAH GEAN YUEN CHONG · More Details Abstract Fulltext PDF.

New insights on water level variability for Lake Turkana for the past 15 ka and at 150 ka from relict beaches

Science.gov (United States)

Forman, S. L.; Wright, D.

2015-12-01

Relict beaches adjacent to Lake Turkana provide a record of water level variability for the Late Quaternary. This study focused on deciphering the geomorphology, sedimentology, stratigraphy and 14C chronology of strand plain sequences in the Kalokol and Lothagam areas. Nine >30 m oscillations in water level were documented between ca. 15 and 4 ka. The earliest oscillation between ca. 14.5 and 13 ka is not well constrained with water level to at least 70 m above the present surface and subsequently fell to at least 50 m. Lake level increased to ~ 90 m between ca. 11.2 and 10.4 ka, post Younger Dryas cooling. Water level fell by >30 m by 10.2 ka, with another potential rise at ca. 8.5 ka to >70 m above current level. Lake level regressed by > 40 m at 8.2 ka coincident with cooling in the equatorial Eastern Atlantic Ocean. Two major >70 m lake level oscillations centered at 6.6 and 5.2 ka may reflect enhanced convection with warmer sea surface temperatures in the Western Indian Ocean. The end of the African Humid Period occurred from ca. 8.0 to 4.5 ka and was characterized by variable lake level (± > 40 m), rather than one monotonic fall in water level. This lake level variability reflects a complex response to variations in the extent and intensity of the East and West African Monsoons near geographic and topographic limits within the catchment of Lake Turkana. Also, for this closed lake basin excess and deficits in water input are amplified with a cascading lake effect in the East Rift Valley and through the Chew Bahir Basin. The final regression from a high stand of > 90 m began at. 5.2 ka and water level was below 20 m by 4.5 ka; and for the remainder of the Holocene. This sustained low stand is associated with weakening of the West African Monsoon, a shift of the mean position of Congo Air Boundary west of the Lake Turkana catchment and with meter-scale variability in lake level linked to Walker circulation across the Indian Ocean. A surprising observation is

Bandwidth-Efficient Communication through 225 MHz Ka-band Relay Satellite Channel

Science.gov (United States)

Downey, Joseph; Downey, James; Reinhart, Richard C.; Evans, Michael Alan; Mortensen, Dale John

2016-01-01

The communications and navigation space infrastructure of the National Aeronautics and Space Administration (NASA) consists of a constellation of relay satellites (called Tracking and Data Relay Satellites (TDRS)) and a global set of ground stations to receive and deliver data to researchers around the world from mission spacecraft throughout the solar system. Planning is underway to enhance and transform the infrastructure over the coming decade. Key to the upgrade will be the simultaneous and efficient use of relay transponders to minimize cost and operations while supporting science and exploration spacecraft. Efficient use of transponders necessitates bandwidth efficient communications to best use and maximize data throughput within the allocated spectrum. Experiments conducted with NASA's Space Communication and Navigation (SCaN) Testbed on the International Space Station provides a unique opportunity to evaluate advanced communication techniques, such as bandwidth-efficient modulations, in an operational flight system. Demonstrations of these new techniques in realistic flight conditions provides critical experience and reduces the risk of using these techniques in future missions. Efficient use of spectrum is enabled by using high-order modulations coupled with efficient forward error correction codes. This paper presents a high-rate, bandwidth-efficient waveform operating over the 225 MHz Ka-band service of the TDRS System (TDRSS). The testing explores the application of Gaussian Minimum Shift Keying (GMSK), 248-phase shift keying (PSK) and 1632- amplitude PSK (APSK) providing over three bits-per-second-per-Hertz (3 bsHz) modulation combined with various LDPC encoding rates to maximize throughput. With a symbol rate of 200 Mbaud, coded data rates of 1000 Mbps were tested in the laboratory and up to 800 Mbps over the TDRS 225 MHz channel. This paper will present on the high-rate waveform design, channel characteristics, performance results, compensation

X-parameter Based GaN Device Modeling and its Application to a High-efficiency PA Design

DEFF Research Database (Denmark)

Wang, Yelin; Nielsen, Troels Studsgaard; Jensen, Ole Kiel

2014-01-01

X-parameters are supersets of S-parameters and applicable to both linear and nonlinear system modeling. In this paper, a packaged 6 W Gallium Nitride (GaN) RF power transistor is modeled using load-dependent X-parameters by simulations. During the device characterization the load impedance is tuned...... to decrease the complexity of a harmonic load-pull measurement setup. A high-efficiency 2 GHz power amplifier is also designed for further validation of the concept....

Energy band structure and electrical properties of Ga-oxide/GaN interface formed by remote oxygen plasma

Science.gov (United States)

Yamamoto, Taishi; Taoka, Noriyuki; Ohta, Akio; Truyen, Nguyen Xuan; Yamada, Hisashi; Takahashi, Tokio; Ikeda, Mitsuhisa; Makihara, Katsunori; Nakatsuka, Osamu; Shimizu, Mitsuaki; Miyazaki, Seiichi

2018-06-01

The energy band structure of a Ga-oxide/GaN structure formed by remote oxygen plasma exposure and the electrical interface properties of the GaN metal–oxide–semiconductor (MOS) capacitors with the SiO2/Ga-oxide/GaN structures with postdeposition annealing (PDA) at various temperatures have been investigated. Reflection high-energy electron diffraction and X-ray photoelectron spectroscopy clarified that the formed Ga-oxide layer is neither a single nor polycrystalline phase with high crystallinity. We found that the energy band offsets at the conduction band minimum and at the valence band maximum between the Ga-oxide layer and the GaN surface were 0.4 and 1.2 ± 0.2 eV, respectively. Furthermore, capacitance–voltage (C–V) characteristics revealed that the interface trap density (D it) is lower than the evaluation limit of Terman method without depending on the PDA temperatures, and that the SiO2/Ga-oxide stack can work as a protection layer to maintain the low D it, avoiding the significant decomposition of GaN at the high PDA temperature of 800 °C.

Improved InGaN/GaN quantum wells on treated GaN template with a Ga-rich GaN interlayer

International Nuclear Information System (INIS)

Fang, Zhilai; Shen, Xiyang; Wu, Zhengyuan; Zhang, Tong-Yi

2015-01-01

Treated GaN template was achieved by in situ droplet epitaxy of a Ga-rich GaN interlayer on the conventional GaN template. InGaN/GaN quantum wells (QWs) were grown on the conventional and treated GaN templates under the same growth conditions and then comprehensively characterized. The indium homogeneity in the InGaN layers and the interface sharpness between InGaN and GaN layers of the InGaN/GaN QWs on the treated GaN template were significantly improved. The emission intensity from the InGaN/GaN QWs on the treated GaN template was enhanced by 20% than that on the conventional GaN template, which was attributed to the strain reduction and the improvement in crystalline quality. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Efficiency droop in GaN LEDs at high injection levels: Role of hydrogen

Energy Technology Data Exchange (ETDEWEB)

Bochkareva, N. I. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation); Sheremet, I. A. [Financial University under the Government of the Russian Federation (Russian Federation); Shreter, Yu. G., E-mail: y.shreter@mail.ioffe.ru [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation)

2016-10-15

Point defects in GaN and, in particular, their manifestation in the photoluminescence, optical absorption, and recombination current in light-emitting diodes with InGaN/GaN quantum wells are analyzed. The results of this analysis demonstrate that the wide tail of defect states in the band gap of GaN facilitates the trap-assisted tunneling of thermally activated carriers into the quantum well, but simultaneously leads to a decrease in the nonradiative-recombination lifetime and to an efficiency droop as the quasi-Fermi levels intersect the defect states with increasing forward bias. The results reveal the dominant role of hydrogen in the recombination activity of defects with dangling bonds and in the efficiency of GaN-based devices.

Amplificador de Potencia de Alto Rendimiento Clase E en Banda S

OpenAIRE

Patiño Gómez, Moisés; Ortega González, Francisco Javier; Nicolás García, Miguel; Tena Ramos, David; Pardo Martín, José Manuel

2016-01-01

High-efficiency power amplification techniques are currently a well-known research field. A S-band suboptimum Class-E power amplifier based on a unmatched packaged GaN HEMT has been designed and built in this work. The load network of this amplifier is made of microstrip transmission lines and it is based on the double-reactance compensation principle. This kind of switchmode RF power amplifiers can be a solution for high-efficiency microwave amplification when nominal Class-E is not possi...

P-type doping of GaN

International Nuclear Information System (INIS)

Wong, R.K.

2000-01-01

After implantation of As, As + Be, and As + Ga into GaN and annealing for short durations at temperatures as high as 1500 C, the GaN films remained highly resistive. It was apparent from c-RBS studies that although implantation damage did not create an amorphous layer in the GaN film, annealing at 1500 C did not provide enough energy to completely recover the radiation damage. Disorder recovered significantly after annealing at temperatures up to 1500 C, but not completely. From SIMS analysis, oxygen contamination in the AIN capping layer causes oxygen diffusion into the GaN film above 1400 C. The sapphire substrate (A1203) also decomposed and oxygen penetrated into the backside of the GaN layer above 1400 C. To prevent donor-like oxygen impurities from the capping layer and the substrate from contaminating the GaN film and compensating acceptors, post-implantation annealing should be done at temperatures below 1500 C. Oxygen in the cap could be reduced by growing the AIN cap on the GaN layer after the GaN growth run or by depositing the AIN layer in a ultra high vacuum (UHV) system post-growth to minimize residual oxygen and water contamination. With longer annealing times at 1400 C or at higher temperatures with a higher quality AIN, the implantation drainage may fully recover

P-type doping of GaN

Energy Technology Data Exchange (ETDEWEB)

Wong, Raechelle Kimberly [Univ. of California, Berkeley, CA (United States)

2000-04-01

After implantation of As, As + Be, and As + Ga into GaN and annealing for short durations at temperatures as high as 1500 C, the GaN films remained highly resistive. It was apparent from c-RBS studies that although implantation damage did not create an amorphous layer in the GaN film, annealing at 1500 C did not provide enough energy to completely recover the radiation damage. Disorder recovered significantly after annealing at temperatures up to 1500 C, but not completely. From SIMS analysis, oxygen contamination in the AIN capping layer causes oxygen diffusion into the GaN film above 1400 C. The sapphire substrate (A1203) also decomposed and oxygen penetrated into the backside of the GaN layer above 1400 C. To prevent donor-like oxygen impurities from the capping layer and the substrate from contaminating the GaN film and compensating acceptors, post-implantation annealing should be done at temperatures below 1500 C. Oxygen in the cap could be reduced by growing the AIN cap on the GaN layer after the GaN growth run or by depositing the AIN layer in a ultra high vacuum (UHV) system post-growth to minimize residual oxygen and water contamination. With longer annealing times at 1400 C or at higher temperatures with a higher quality AIN, the implantation drainage may fully recover.

Implantation induced electrical isolation of sulphur doped GaN xAs1-x layers

International Nuclear Information System (INIS)

Ahmed, S.; Lin, J.; Haq, A.; Sealy, B.

2005-01-01

The study of III-N-V semiconductor alloys, especially GaN x As 1-x has been increasing in the last few years. The strong dependence of the band gap on the nitrogen content has made this material important for a variety of applications, including long wavelength optoelectronic devices and high efficiency solar cells. We report on the effects of sulphur doping implants on the achieved electrical isolation in GaN x As 1-x layers using proton bombardment. Sulphur ions were implanted in MOCVD-grown GaN x As 1-x layers (1.4 μm thick with nominal x = 1%) with multiple energies creating approximately uniform doping profiles in the range of about 1 x 10 18 -5 x 10 19 cm -3 . Several proton implants were performed in order to find the threshold dose (minimum dose to achieve maximum sheet resistivity) for the electrical isolation of n-type GaN x As 1-x layers. Results show that the sheet resistance of n-type layers can be increased by about five orders of magnitude by proton implantation and the threshold dose to convert a conductive layer to a highly resistive one depends on the original free carrier concentration. The study of annealing temperature dependence of sheet resistivity in proton-isolated GaN x As 1-x layers shows that the electrical isolation can be preserved up to 450 and 500 deg. C when the implantation is performed at RT and 77 K with threshold dose, respectively. These results for n-type GaN x As 1-x layers are novel and have ramifications for device engineers

Ultraviolet light-absorbing and emitting diodes consisting of a p-type transparent-semiconducting NiO film deposited on an n-type GaN homoepitaxial layer

Science.gov (United States)

Nakai, Hiroshi; Sugiyama, Mutsumi; Chichibu, Shigefusa F.

2017-05-01

Gallium nitride (GaN) and related (Al,Ga,In)N alloys provide practical benefits in the production of light-emitting diodes (LEDs) and laser diodes operating in ultraviolet (UV) to green wavelength regions. However, obtaining low resistivity p-type AlN or AlGaN of large bandgap energies (Eg) is a critical issue in fabricating UV and deep UV-LEDs. NiO is a promising candidate for useful p-type transparent-semiconducting films because its Eg is 4.0 eV and it can be doped into p-type conductivity of sufficiently low resistivity. By using these technologies, heterogeneous junction diodes consisting of a p-type transparent-semiconducting polycrystalline NiO film on an n-type single crystalline GaN epilayer on a low threading-dislocation density, free-standing GaN substrate were fabricated. The NiO film was deposited by using the conventional RF-sputtering method, and the GaN homoepitaxial layer was grown by metalorganic vapor phase epitaxy. They exhibited a significant photovoltaic effect under UV light and also exhibited an electroluminescence peak at 3.26 eV under forward-biased conditions. From the conduction and valence band (EV) discontinuities, the NiO/GaN heterointerface is assigned to form a staggered-type (TYPE-II) band alignment with the EV of NiO higher by 2.0 eV than that of GaN. A rectifying property that is consistent with the proposed band diagram was observed in the current-voltage characteristics. These results indicate that polycrystalline NiO functions as a hole-extracting and injecting layer of UV optoelectronic devices.

Growth of GaN on SiC/Si substrates using AlN buffer layer by hot-mesh CVD

Energy Technology Data Exchange (ETDEWEB)

Tamura, Kazuyuki [Nagaoka University of Technology, Nagaoka 940-2188 (Japan)], E-mail: kazuyuki@stn.nagaokaut.ac.jp; Kuroki, Yuichiro; Yasui, Kanji [Nagaoka University of Technology, Nagaoka 940-2188 (Japan); Suemitsu, Maki; Ito, Takashi [Center of Interdisciplinary Research, Tohoku University, Sendai 980-8578 (Japan); Endou, Tetsuro [Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577 (Japan); Nakazawa, Hideki [Faculty of Science and Technology, Hirosaki University, Hirosaki 036-8561 (Japan); Narita, Yuzuru [Center of Interdisciplinary Research, Tohoku University, Sendai 980-8578 (Japan); Takata, Masasuke; Akahane, Tadashi [Nagaoka University of Technology, Nagaoka 940-2188 (Japan)

2008-01-15

GaN films were grown on SiC/Si (111) substrates by hot-mesh chemical vapor deposition (CVD) using ammonia (NH{sub 3}) and trimetylgallium (TMG) under low V/III source gas ratio (NH{sub 3}/TMG = 80). The SiC layer was grown by a carbonization process on the Si substrates using propane (C{sub 3}H{sub 8}). The AlN layer was deposited as a buffer layer using NH{sub 3} and trimetylaluminum (TMA). GaN films were formed and grown by the reaction between NH{sub x} radicals, generated on a tungsten hot mesh, and the TMG molecules. The GaN films with the AlN buffer layer showed better crystallinity and stronger near-band-edge emission compared to those without the AlN layer.

Structural and luminescence properties of GaN nanowires grown using cobalt phthalocyanine as catalyst

Science.gov (United States)

Yadav, Shivesh; Rodríguez-Fernández, Carlos; de Lima, Mauricio M.; Cantarero, Andres; Dhar, Subhabrata

2015-12-01

Catalyst free methods have usually been employed to avoid any catalyst induced contamination for the synthesis of GaN nanowires with better transport and optical properties. Here, we have used a catalytic route to grow GaN nanowires, which show good optical quality. Structural and luminescence properties of GaN nanowires grown by vapor-liquid-solid technique using cobalt phthalocyanine as catalyst are systematically investigated as a function of various growth parameters such as the growth temperature and III/V ratio. The study reveals that most of the nanowires, which are several tens of microns long, grow along [ 10 1 ¯ 0 ] direction. Interestingly, the average wire diameter has been found to decrease with the increase in III/V ratio. It has also been observed that in these samples, defect related broad luminescence features, which are often present in GaN, are completely suppressed. At all temperatures, photoluminescence spectrum is found to be dominated only by a band edge feature, which comprises of free and bound excitonic transitions. Our study furthermore reveals that the bound excitonic feature is associated with excitons trapped in certain deep level defects, which result from the deficiency of nitrogen during growth. This transition has a strong coupling with the localized vibrational modes of the defects.

Investigation of different mechanisms of GaN growth induced on AlN and GaN nucleation layers

International Nuclear Information System (INIS)

Tasco, V.; Campa, A.; Tarantini, I.; Passaseo, A.; Gonzalez-Posada, F.; Munoz, E.; Redondo-Cubero, A.; Lorenz, K.; Franco, N.

2009-01-01

The evolution of GaN growth on AlN and GaN nucleation layers is compared through morphological and structural analyses, including ion beam analysis. By using AlN nucleation layer grown at high temperature, improved crystalline quality is exhibited by 300 nm thin GaN epilayers. GaN (002) x-ray rocking curve as narrow as 168 arc sec and atomic-step surface morphology characterize such a thin GaN film on AlN. Defects are strongly confined into the first 50 nm of growth, whereas a fast laterally coherent growth is observed when increasing thickness, as an effect of high temperature AlN surface morphology and Ga adatom dynamics over this template

Identification of yellow luminescence centers in Be-doped GaN through pressure-dependent studies

Science.gov (United States)

Teisseyre, Henryk; Lyons, John L.; Kaminska, Agata; Jankowski, Dawid; Jarosz, Dawid; Boćkowski, Michał; Suchocki, Andrzej; Van de Walle, Chris G.

2017-06-01

Effective acceptor doping of wide-band-gap semiconductors is still an outstanding problem. Beryllium has been suggested as a shallow acceptor in GaN, but despite sporadic announcements, Be-induced p-type doping has never been practically realized. Be-doped GaN possesses two luminescence bands; one at 3.38 eV and a second near 2.2 eV at an energy close to that of the parasitic yellow luminescence often found in undoped GaN crystals. We have performed high hydrostatic pressure studies of bulk, Be-doped gallium nitride crystals using the diamond anvil cell technique. We observed a splitting of the yellow luminescence line under hydrostatic pressure into two components, one which is strongly dependent on applied pressure and another whose pressure dependence is more modest. Together with hybrid functional calculations, we attribute the strongly-varying component to the beryllium-oxygen complex. The second component of the yellow luminescence possesses very similar pressure behavior to the yellow luminescence observed in undoped samples grown by the same method, behavior which we find consistent with the CN acceptor. At higher pressure, we observe the vanishing of yellow luminescence and a rapid increase in luminescence intensity of the UV line. We explain this as the pressure-induced transformation of the Be-O complex from a highly localized state with large lattice relaxation to a delocalized state with limited lattice relaxation.

Utilization of a Vircator to drive a High Power Relativistic Klystron Amplifier

Science.gov (United States)

Gardelle, J.; Bardy, J.; Cassany, B.; Desanlis, T.; Eyl, P.; Galtié, A.; Modin, P.; Voisin, L.; Balleyguier, P.; Gouard, P.; Donohue, J.

2002-11-01

At CESTA, we have been producing electron beams for some fifteen years by using induction accelerators and pulse diodes. First we had performed Frre-Electron Lasers experiments and we are currently studying the production of High-Power microwaves in the S-band. Among the possible sources we have chosen to perform Relativistic Klystron (RK) experiments with a pulse diode capable of generating a 700kV, 15 kA, 100 ns annular electron beam. In an amplifier configuration, we are testing the idea of using a Vircator as the driver for the first cavity of the klystron. This Vircator uses a simple electrical generator (Marx capacitor bank) which operates in the S-band in the GW class. By reducing the power level to about 100 MW, a 200 ns reliable and reproducible input driver pulse is obtained. First, we present the results of a preliminary experiment for which a coaxial cavity has been built in order to be fed by the Vircator emission at 2.45 GHz. Secondly, we give the experimental results in an oscillator configuration which corresponds to the fisrt step of our RK studies. Comparisons with the results of numerical simulations performed with MAGIC and MAFIA will be given for both experiments.

Inter simple sequence repeats (ISSR) and random amplified ...

African Journals Online (AJOL)

21 of 30 random amplified polymorphic DNA (RAPD) primers produced 220 reproducible bands with average of 10.47 bands per primer and 80.12% of polymorphism. OPR02 primer showed the highest number of effective allele (Ne), Shannon index (I) and genetic diversity (H). Some of the cultivars had specific bands, ...

A DFT study on NEA GaN photocathode with an ultrathin n-type Si-doped GaN cap layer

Science.gov (United States)

Xia, Sihao; Liu, Lei; Kong, Yike; Diao, Yu

2016-10-01

Due to the drawbacks of conventional negative electron affinity (NEA) GaN photocathodes activated by Cs or Cs/O, a new-type NEA GaN photocathodes with heterojunction surface dispense with Cs activation are proposed. This structure can be obtained through the coverage of an ultrathin n-type Si-doped GaN cap layer on the p-type Mg-doped GaN emission layer. The influences of the cap layer on the photocathode are calculated using DFT. This study indicates that the n-type cap layer can promote the photoemission characteristics of GaN photocathode and demonstrates the probability of the preparation of a NEA GaN photocathode with an n-type cap layer.

Electrospun amplified fiber optics.

Science.gov (United States)

Morello, Giovanni; Camposeo, Andrea; Moffa, Maria; Pisignano, Dario

2015-03-11

All-optical signal processing is the focus of much research aiming to obtain effective alternatives to existing data transmission platforms. Amplification of light in fiber optics, such as in Erbium-doped fiber amplifiers, is especially important for efficient signal transmission. However, the complex fabrication methods involving high-temperature processes performed in a highly pure environment slow the fabrication process and make amplified components expensive with respect to an ideal, high-throughput, room temperature production. Here, we report on near-infrared polymer fiber amplifiers working over a band of ∼20 nm. The fibers are cheap, spun with a process entirely carried out at room temperature, and shown to have amplified spontaneous emission with good gain coefficients and low levels of optical losses (a few cm(-1)). The amplification process is favored by high fiber quality and low self-absorption. The found performance metrics appear to be suitable for short-distance operations, and the large variety of commercially available doping dyes might allow for effective multiwavelength operations by electrospun amplified fiber optics.

Shape dependent electronic properties of wurzite GaN nanowire

Energy Technology Data Exchange (ETDEWEB)

Srivastava, Pankaj, E-mail: pankajs@iiitm.ac.in; Kumar, Avaneesh, E-mail: avaneeshk7@ymail.com; Sharma, Varun, E-mail: sunny2013@gmail.com [Nanomaterials Research Group, ABV-Indian Institute of Information Technology and Management (IIITM), Gwalior-474015 (India); Jaiswal, Neeraj K., E-mail: neerajkumar.phd@gmail.com [Discipline of Physics, PDPM-Indian Institute of Information Technology, Design and Manufacturing (IIITDM), Jabalpur-482005 (India)

2016-05-06

In the present work, energetic stability and electronic behavior of triangular and square shaped wurzite GaN NW oriented along [1100] and [11 2 0] direction has been investigated by employing ab-initio DFT calculation. Structural analysis suggests that triangular shaped NW undergoes strong surface reconstruction compared to square shaped NW. However, binding energy reveals that square shaped NW is energetically more feasible than triangular NW. Further, from electronic band structure we observe that both structures are metallic with higher metallicity for triangular shaped NW.

Demonstration of forward inter-band tunneling in GaN by polarization engineering

International Nuclear Information System (INIS)

Krishnamoorthy, Sriram; Park, Pil Sung; Rajan, Siddharth

2011-01-01

We report on the design, fabrication, and characterization of GaN interband tunnel junction showing forward tunneling characteristics. We have achieved very high forward tunneling currents (153 mA/cm 2 at 10 mV, and 17.7 A/cm 2 peak current) in polarization-engineered GaN/InGaN/GaN heterojunction diodes grown by plasma assisted molecular beam epitaxy. We also report the observation of repeatable negative differential resistance in interband III-Nitride tunnel junctions, with peak-valley current ratio of 4 at room temperature. The forward current density achieved in this work meets the typical current drive requirements of a multi-junction solar cell.

Determination of band offsets at GaN/single-layer MoS2 heterojunction

KAUST Repository

Tangi, Malleswararao

2016-07-25

We report the band alignment parameters of the GaN/single-layer (SL) MoS2 heterostructure where the GaN thin layer is grown by molecular beam epitaxy on CVD deposited SL-MoS2/c-sapphire. We confirm that the MoS2 is an SL by measuring the separation and position of room temperature micro-Raman E1 2g and A1 g modes, absorbance, and micro-photoluminescence bandgap studies. This is in good agreement with HRTEM cross-sectional analysis. The determination of band offset parameters at the GaN/SL-MoS2 heterojunction is carried out by high-resolution X-ray photoelectron spectroscopy accompanying with electronic bandgap values of SL-MoS2 and GaN. The valence band and conduction band offset values are, respectively, measured to be 1.86 ± 0.08 and 0.56 ± 0.1 eV with type II band alignment. The determination of these unprecedented band offset parameters opens up a way to integrate 3D group III nitride materials with 2D transition metal dichalcogenide layers for designing and modeling of their heterojunction based electronic and photonic devices.

Determination of band offsets at GaN/single-layer MoS2 heterojunction

KAUST Repository

Tangi, Malleswararao; Mishra, Pawan; Ng, Tien Khee; Hedhili, Mohamed N.; Janjua, Bilal; Alias, Mohd Sharizal; Anjum, Dalaver H.; Tseng, Chien-Chih; Shi, Yumeng; Joyce, Hannah J.; Li, Lain-Jong; Ooi, Boon S.

2016-01-01

We report the band alignment parameters of the GaN/single-layer (SL) MoS2 heterostructure where the GaN thin layer is grown by molecular beam epitaxy on CVD deposited SL-MoS2/c-sapphire. We confirm that the MoS2 is an SL by measuring the separation and position of room temperature micro-Raman E1 2g and A1 g modes, absorbance, and micro-photoluminescence bandgap studies. This is in good agreement with HRTEM cross-sectional analysis. The determination of band offset parameters at the GaN/SL-MoS2 heterojunction is carried out by high-resolution X-ray photoelectron spectroscopy accompanying with electronic bandgap values of SL-MoS2 and GaN. The valence band and conduction band offset values are, respectively, measured to be 1.86 ± 0.08 and 0.56 ± 0.1 eV with type II band alignment. The determination of these unprecedented band offset parameters opens up a way to integrate 3D group III nitride materials with 2D transition metal dichalcogenide layers for designing and modeling of their heterojunction based electronic and photonic devices.

The design of a 4’th order Bandpass Butterworth filter with one operational amplifier.

OpenAIRE

Gaunholt, Hans

2008-01-01

A numerical design method is presented for the design of all pole band pass active-RC filters applying just one operational amplifier. The operational amplifier model used is the integrator model: ωt/s where ωt is the unity gain fre-quency. The design method is used for the design of a fourth order band pass filter with Butterworth poles applying just one operational amplifier coupled as a unity gain amplifier. The unity gain amplifiers have the advantage of providing low power consumption, y...

X-ray absorption near-edge structure of GaN with high Mn concentration grown on SiC

Science.gov (United States)

Sancho-Juan, O.; Cantarero, A.; Garro, N.; Cros, A.; Martínez-Criado, G.; Salomé, M.; Susini, J.; Olguín, D.; Dhar, S.

2009-07-01

By means of x-ray absorption near-edge structure (XANES) several Ga1-xMnxN (0.03GaN samples consisted of different epilayers grown by molecular beam epitaxy on [0001] SiC substrates. The low mismatch between GaN and SiC allows for a good quality and homogeneity of the material. The measurements were performed in fluorescence mode around both the Ga and Mn K edges. All samples studied present a similar Mn ionization state, very close to 2+, and tetrahedral coordination. In order to interpret the near-edge structure, we have performed ab initio calculations using the full potential linear augmented plane wave method as implemented in the Wien2k code. The calculations show the appearance of a Mn bonding \\mathrm {t_{2}}\\uparrow band localized in the gap region, and the corresponding anti-bonding state \\mathrm {t_{2}}\\downarrow , which seem to be responsible for the double structure which appears at the pre-edge absorption region. The shoulders and main absorption peak of the XANES spectra are attributed to transitions from the Mn(1s) band to the conduction bands, which are partially dipole allowed because of the Mn(4p) contribution to these bands.

Optical nonlinearities and ultrafast all-optical switching of m-plane GaN in the near-infrared

Energy Technology Data Exchange (ETDEWEB)

Fang, Yu; Zhou, Feng; Yang, Junyi; Yang, Yong [College of Physics, Optoelectronics and Energy, Soochow University, 215006 Suzhou (China); Xiao, Zhengguo; Wu, Xingzhi [Department of Physics, Harbin Institute of Technology, 150001 Harbin (China); Song, Yinglin, E-mail: ylsong@hit.edu.cn [College of Physics, Optoelectronics and Energy, Soochow University, 215006 Suzhou (China); Department of Physics, Harbin Institute of Technology, 150001 Harbin (China)

2015-06-22

We reported a systematic investigation on the three-photon absorption (3PA) spectra and wavelength dispersion of Kerr refraction of bulk m-plane GaN crystal with both polarization E⊥c and E//c by femtosecond Z-scan technique in the near-infrared region from 760 to 1030 nm. Both 3PA spectra and Kerr refraction dispersion were in good agreement with two-band models. The calculated nonlinear figure of merit and measured ultrafast nonlinear refraction dynamics via femtosecond pump-probe with phase object method revealed that m-plane GaN would be a promising candidate for ultrafast all-optical switching and autocorrelation applications at telecommunication wavelengths.

Performance Analysis of a Hybrid Raman Optical Parametric Amplifier in the O- and E-Bands for CWDM PONs

Directory of Open Access Journals (Sweden)

Sasanthi Peiris

2014-12-01

Full Text Available We describe a hybrid Raman-optical parametric amplifier (HROPA operating at the O- and E-bands and designed for coarse wavelength division multiplexed (CWDM passive optical networks (PONs. We present the mathematical model and simulation results for the optimization of this HROPA design. Our analysis shows that separating the two amplification processes allows for optimization of each one separately, e.g., proper selection of pump optical powers and wavelengths to achieve maximum gain bandwidth and low gain ripple. Furthermore, we show that the proper design of optical filters incorporated in the HROPA architecture can suppress idlers generated during the OPA process, as well as other crosstalk that leaks through the passive optical components. The design approach enables error free performance for all nine wavelengths within the low half of the CWDM band, assigned to upstream traffic in a CWDM PON architecture, for all possible transmitter wavelength misalignments (±6 nm from the center wavelength of the channel band. We show that the HROPA can achieve error-free performance with a 170-nm gain bandwidth (e.g., 1264 nm–1436 nm, a gain of >20 dB and a gain ripple of <4 dB.

Defect-impurity complex induced long-range ferromagnetism in GaN nanowires

KAUST Repository

Assa Aravindh, S

2015-12-14

Present work investigates the structural, electronic and magnetic properties of Gd doped wurtzite GaN nanowires (NWs) oriented along the [0001] direction in presence of intrinsic defects by employing the GGA + U approximation. We find that Ga vacancy (VGa) exhibits lower formation energy compared to N vacancy. Further stabilization of point defects occurs due to the presence of Gd. The strength of ferromagnetism (FM) increases by additional positive charge induced by the VGa. Electronic structure analysis shows that VGa introduces defect levels in the band gap leading to ferromagnetic coupling due to the hybridization of the p states of the Ga and N atoms with the Gd d and f states. Ferromagnetic exchange coupling energy of 76.4 meV is obtained in presence of Gd-VGa complex; hence, the FM is largely determined by the cation vacancy-rare earth complex defects in GaN NWs.

Defect-impurity complex induced long-range ferromagnetism in GaN nanowires

KAUST Repository

Assa Aravindh, S; Roqan, Iman S.

2015-01-01

Present work investigates the structural, electronic and magnetic properties of Gd doped wurtzite GaN nanowires (NWs) oriented along the [0001] direction in presence of intrinsic defects by employing the GGA + U approximation. We find that Ga vacancy (VGa) exhibits lower formation energy compared to N vacancy. Further stabilization of point defects occurs due to the presence of Gd. The strength of ferromagnetism (FM) increases by additional positive charge induced by the VGa. Electronic structure analysis shows that VGa introduces defect levels in the band gap leading to ferromagnetic coupling due to the hybridization of the p states of the Ga and N atoms with the Gd d and f states. Ferromagnetic exchange coupling energy of 76.4 meV is obtained in presence of Gd-VGa complex; hence, the FM is largely determined by the cation vacancy-rare earth complex defects in GaN NWs.

Characterization of low-frequency noise in molecular beam epitaxy-grown GaN epilayers deposited on double buffer layers

International Nuclear Information System (INIS)

Fong, W.K.; Ng, S.W.; Leung, B.H.; Surya, Charles

2003-01-01

We report the growth of high-mobility Si-doped GaN epilayers utilizing unique double buffer layer (DBL) structures, which consist of a thin buffer layer and a thick GaN intermediate-temperature buffer layer (ITBL). In this study, three types of DBL were investigated: (i) thin GaN low-temperature buffer layer/GaN ITBL (type I); (ii) nitridated Ga metal film/GaN ITBL (type II); and (iii) thin AlN high-temperature buffer layer/GaN ITBL (type III). Systematic measurements were conducted on the electron mobilities and the low-frequency noise over a wide range of temperatures. It is found that the electron mobilities of the GaN films are substantially improved with the use of DBLs, with the sample using type III DBL which exhibits the highest low-temperature mobility. Furthermore, the same sample also demonstrates the elimination of deep levels at 91 and 255 meV below the conduction band. This is believed to result from the relaxation of tensile stress during growth with the use of type III DBLs

The origins and properties of intrinsic nonradiative recombination centers in wide bandgap GaN and AlGaN

Science.gov (United States)

Chichibu, S. F.; Uedono, A.; Kojima, K.; Ikeda, H.; Fujito, K.; Takashima, S.; Edo, M.; Ueno, K.; Ishibashi, S.

2018-04-01

The nonradiative lifetime (τNR) of the near-band-edge emission in various quality GaN samples is compared with the results of positron annihilation measurement, in order to identify the origin and to determine the capture-cross-section of the major intrinsic nonradiative recombination centers (NRCs). The room-temperature τNR of various n-type GaN samples increased with decreasing the concentration of divacancies composed of a Ga vacancy (VGa) and a N vacancy (VN), namely, VGaVN. The τNR value also increased with increasing the diffusion length of positrons, which is almost proportional to the inverse third root of the gross concentration of all point defects. The results indicate that major intrinsic NRC in n-type GaN is VGaVN. From the relationship between its concentration and τNR, its hole capture-cross-section is estimated to be about 7 × 10-14 cm2. Different from the case of 4H-SiC, the major NRCs in p-type and n-type GaN are different: the major NRCs in Mg-doped p-type GaN epilayers are assigned to multiple vacancies containing a VGa and two (or three) VNs, namely, VGa(VN)n (n = 2 or 3). The ion-implanted Mg-doped GaN films are found to contain larger size vacancy complexes such as (VGa)3(VN)3. In analogy with GaN, major NRCs in Al0.6Ga0.4N alloys are assigned to vacancy complexes containing an Al vacancy or a VGa.

Power amplifiers for the S-, C-, X- and Ku-bands an EDA perspective

CERN Document Server

Božanić, Mladen

2016-01-01

This book provides a detailed review of power amplifiers, including classes and topologies rarely covered in books, and supplies sufficient information to allow the reader to design an entire amplifier system, and not just the power amplification stage. A central aim is to furnish readers with ideas on how to simplify the design process for a preferred power amplifier stage by introducing software-based routines in a programming language of their choice. The book is in two parts, the first focusing on power amplifier theory and the second on EDA concepts. Readers will gain enough knowledge of RF and microwave transmission theory, principles of active and passive device design and manufacturing, and power amplifier design concepts to allow them to quickly create their own programs, which will help to accelerate the transceiver design process. All circuit designers facing the challenge of designing an RF or microwave power amplifier for frequencies from 2 to 18 GHz will find this book to be a valuable asset.

GaN based nanorods for solid state lighting

Energy Technology Data Exchange (ETDEWEB)

Li Shunfeng; Waag, Andreas [Institute of Semiconductor Technology, Braunschweig University of Technology, 38106 Braunschweig (Germany)

2012-04-01

In recent years, GaN nanorods are emerging as a very promising novel route toward devices for nano-optoelectronics and nano-photonics. In particular, core-shell light emitting devices are thought to be a breakthrough development in solid state lighting, nanorod based LEDs have many potential advantages as compared to their 2 D thin film counterparts. In this paper, we review the recent developments of GaN nanorod growth, characterization, and related device applications based on GaN nanorods. The initial work on GaN nanorod growth focused on catalyst-assisted and catalyst-free statistical growth. The growth condition and growth mechanisms were extensively investigated and discussed. Doping of GaN nanorods, especially p-doping, was found to significantly influence the morphology of GaN nanorods. The large surface of 3 D GaN nanorods induces new optical and electrical properties, which normally can be neglected in layered structures. Recently, more controlled selective area growth of GaN nanorods was realized using patterned substrates both by metalorganic chemical vapor deposition (MOCVD) and by molecular beam epitaxy (MBE). Advanced structures, for example, photonic crystals and DBRs are meanwhile integrated in GaN nanorod structures. Based on the work of growth and characterization of GaN nanorods, GaN nanoLEDs were reported by several groups with different growth and processing methods. Core/shell nanoLED structures were also demonstrated, which could be potentially useful for future high efficient LED structures. In this paper, we will discuss recent developments in GaN nanorod technology, focusing on the potential advantages, but also discussing problems and open questions, which may impose obstacles during the future development of a GaN nanorod based LED technology.

Electrically active point defects in Mg implanted n-type GaN grown by metal-organic chemical vapor deposition

Science.gov (United States)

Alfieri, G.; Sundaramoorthy, V. K.; Micheletto, R.

2018-05-01

Magnesium (Mg) is the p-type doping of choice for GaN, and selective area doping by ion implantation is a routine technique employed during device processing. While electrically active defects have been thoroughly studied in as-grown GaN, not much is known about defects generated by ion implantation. This is especially true for the case of Mg. In this study, we carried out an electrical characterization investigation of point defects generated by Mg implantation in GaN. We have found at least nine electrically active levels in the 0.2-1.2 eV energy range, below the conduction band. The isochronal annealing behavior of these levels showed that most of them are thermally stable up to 1000 °C. The nature of the detected defects is then discussed in the light of the results found in the literature.

Probing exciton density of states through phonon-assisted emission in GaN epilayers: A and B exciton contributions

Science.gov (United States)

Cavigli, Lucia; Gabrieli, Riccardo; Gurioli, Massimo; Bogani, Franco; Feltin, Eric; Carlin, Jean-François; Butté, Raphaël; Grandjean, Nicolas; Vinattieri, Anna

2010-09-01

A detailed experimental investigation of the phonon-assisted emission in a high-quality c -plane GaN epilayer is presented up to 200 K. By performing photoluminescence and reflectivity measurements, we find important etaloning effects in the phonon-replica spectra, which have to be corrected before addressing the lineshape analysis. Direct experimental evidence for free exciton thermalization is found for the whole temperature range investigated. A close comparison with existing models for phonon replicas originating from a thermalized free exciton distribution shows that the simplified and commonly adopted description of the exciton-phonon interaction with a single excitonic band leads to a large discrepancy with experimental data. Only the consideration of the complex nature of the excitonic band in GaN, including A and B exciton contributions, allows accounting for the temperature dependence of the peak energy, intensity, and lineshape of the phonon replicas.

True photonic band-gap mode-control in VCSEL structures

DEFF Research Database (Denmark)

Romstad, F.; Madsen, M.; Birkedal, Dan

2003-01-01

Photonic band-gap mode confinement in novel nano-structured large area VCSEL structures is confirmed by the amplified spontaneous emission spectrum. Both guide and anti-guide VCSEL structures are experimentally characterised to verify the photonic band-gap effect.......Photonic band-gap mode confinement in novel nano-structured large area VCSEL structures is confirmed by the amplified spontaneous emission spectrum. Both guide and anti-guide VCSEL structures are experimentally characterised to verify the photonic band-gap effect....

Improvement of luminescence properties of GaN buffer layer for fast nitride scintillator structures

Czech Academy of Sciences Publication Activity Database

Hubáček, T.; Hospodková, Alice; Oswald, Jiří; Kuldová, Karla; Pangrác, Jiří

2017-01-01

Roč. 464, Apr (2017), s. 221-225 ISSN 0022-0248 R&D Projects: GA ČR GA16-11769S; GA MŠk LO1603 Institutional support: RVO:68378271 Keywords : MOVPE * GaN * scintillators * yellow band Subject RIV: BM - Solid Matter Physics ; Magnetism OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.) Impact factor: 1.751, year: 2016

Catalyst and processing effects on metal-assisted chemical etching for the production of highly porous GaN

International Nuclear Information System (INIS)

Geng, Xuewen; Grismer, Dane A; Bohn, Paul W; Duan, Barrett K; Zhao, Liancheng

2013-01-01

Metal-assisted chemical etching is a facile method to produce micro-/nanostructures in the near-surface region of gallium nitride (GaN) and other semiconductors. Detailed studies of the production of porous GaN (PGaN) using different metal catalysts and GaN doping conditions have been performed in order to understand the mechanism by which metal-assisted chemical etching is accomplished in GaN. Patterned catalysts show increasing metal-assisted chemical etching activity to n-GaN in the order Ag < Au < Ir < Pt. In addition, the catalytic behavior of continuous films is compared to discontinuous island films. Continuous metal films strongly shield the surface, hindering metal-assisted chemical etching, an effect which can be overcome by using discontinuous films or increasing the irradiance of the light source. With increasing etch time or irradiance, PGaN morphologies change from uniform porous structures to ridge and valley structures. The doping type plays an important role, with metal-assisted chemical etching activity increasing in the order p-GaN < intrinsic GaN < n-GaN. Both the catalyst identity and the doping type effects are explained by the work functions and the related band offsets that affect the metal-assisted chemical etching process through a combination of different barriers to hole injection and the formation of hole accumulation/depletion layers at the metal–semiconductor interface. (paper)

Emission spectra from AlN and GaN doped with rare earth elements

International Nuclear Information System (INIS)

Choi, Sung Woo; Emura, Shuichi; Kimura, Shigeya; Kim, Moo Seong; Zhou Yikai; Teraguchi, Nobuaki; Suzuki, Akira; Yanase, Akira; Asahi, Hajime

2006-01-01

Luminescent properties of GaN and AlN based semiconductors containing rare earth metals of Gd and Dy are studied. Cathodoluminescent spectra from AlGdN show a clear and sharp peak at 318 nm following LO phonon satellites. Photoluminescence spectra from GaDyN by the above-gap excitation also show several peaks in addition to the broad luminescence band emission. For GaGdN, the sharp PL peaks are also observed at 650 and 670 nm, and they are assigned to the intra-f orbital transitions by their time decay measurements. The broad band at around 365 nm for AlGdN, 505 nm for GaGdN and GaDyN are commonly observed. The origin of these broad bands is discussed

Effects of GaN capping on the structural and the optical properties of InN nanostructures grown by using MOCVD

International Nuclear Information System (INIS)

Sun, Yuanping; Cho, Yonghoon; Wang, Hui; Wang, Lili; Zhang, Shuming; Yang, Hui

2010-01-01

InN nanostructures with and without GaN capping layers were grown by using metal-organic chemical vapor deposition. Morphological, structural, and optical properties were systematically studied by using atomic force microscopy, X-ray diffraction (XRD) and temperature-dependent photoluminescence (PL). XRD results show that an InGaN structure is formed for the sample with a GaN capping layer, which will reduce the quality and the IR PL emission of the InN. The lower emission peak at ∼0.7 eV was theoretically fitted and assigned as the band edge emission of InN. Temperature-dependent PL shows a good quantum efficiency for the sample without a GaN capping layers; this corresponds to a lower density of dislocations and a small activation energy.

Variation of Optical Quenching of Photoconductivity with Resistivity in Unintentional Doped GaN

International Nuclear Information System (INIS)

Qi-Feng, Hou; Xiao-Liang, Wang; Hong-Ling, Xiao; Cui-Mei, Wang; Cui-Bai, Yang; Jin-Min, Li

2010-01-01

The optical quenching of photoconductivity under dual illumination in GaN samples with different resistivity is investigated to reveal the variation of deep levels. The samples are grown by metal organic chemical vapour deposition without intentional doping. Quenching bands centered at 1.35eV, 1.55eV, 1.98eV, and 2.60eV are observed. It is found that the 1.98eV quenching band is dominated in all the samples and the 2.60eV band is observed only in the high-resistivity samples. The possible defect levels responsible for the quenching bands and the origin of different quenching behaviour at 2.60eV are discussed. It is suggested that the defect level responsible for quenching at 2.60eV plays an important role for the enhancement of resistivity

Distributed amplifier using Josephson vortex flow transistors

International Nuclear Information System (INIS)

McGinnis, D.P.; Beyer, J.B.; Nordman, J.E.

1986-01-01

A wide-band traveling wave amplifier using vortex flow transistors is proposed. A vortex flow transistor is a long Josephson junction used as a current controlled voltage source. The dual nature of this device to the field effect transistor is exploited. A circuit model of this device is proposed and a distributed amplifier utilizing 50 vortex flow transistors is predicted to have useful gain to 100 GHz

Piezotronic Effect in Polarity-Controlled GaN Nanowires.

Science.gov (United States)

Zhao, Zhenfu; Pu, Xiong; Han, Changbao; Du, Chunhua; Li, Linxuan; Jiang, Chunyan; Hu, Weiguo; Wang, Zhong Lin

2015-08-25

Using high-quality and polarity-controlled GaN nanowires (NWs), we studied the piezotronic effect in crystal orientation defined wurtzite structures. By applying a normal compressive force on c-plane GaN NWs with an atomic force microscopy tip, the Schottky barrier between the Pt tip and GaN can be effectively tuned by the piezotronic effect. In contrast, the normal compressive force cannot change the electron transport characteristics in m-plane GaN NWs whose piezoelectric polarization axis is turned in the transverse direction. This observation provided solid evidence for clarifying the difference between the piezotronic effect and the piezoresistive effect. We further demonstrated a high sensitivity of the m-plane GaN piezotronic transistor to collect the transverse force. The integration of c-plane GaN and m-plane GaN indicates an overall response to an external force in any direction.

Calculated and experimental low-loss electron energy loss spectra of dislocations in diamond and GaN

CERN Document Server

Jones, R; Gutiérrez-Sosa, A; Bangert, U; Heggie, M I; Blumenau, A T; Frauenheim, T; Briddon, P R

2002-01-01

First-principles calculations of electron energy loss (EEL) spectra for bulk GaN and diamond are compared with experimental spectra acquired with a scanning tunnelling electron microscope offering ultra-high-energy resolution in low-loss energy spectroscopy. The theoretical bulk low-loss EEL spectra, in the E sub g to 10 eV range, are in good agreement with experimental data. Spatially resolved spectra from dislocated regions in both materials are distinct from bulk spectra. The main effects are, however, confined to energy losses lying above the band edge. The calculated spectra for low-energy dislocations in diamond are consistent with the experimental observations, but difficulties remain in understanding the spectra of threading dislocations in GaN.

Chaotic noise in superconducting microbridge 4-photon X-band parametric amplifier

International Nuclear Information System (INIS)

Andresen, J.E.; Christiansen, B.; Levinsen, M.T.

1988-01-01

The anomalous noise rise observed in nearly all types of parametric amplifiers based on Josephson junctions has been an intriguing as well as annoying problem for many years. This phenomenon has been most spectacular in microbridge amplifiers. Here we present measurements on externally pumped single microbridge 4-photon unbiased amplifiers, where the slit with the bridge is used as a slotline resonantly coupled to the waveguide in an exceptionally simple coupling scheme. This scheme may be of interest in itself, particularly if the noise problem can be overcome, but also in other connections. Up to 16 dB gain was obtained at the top of the waveguide. However, the noise rise was observed as usual. An analog computer study on a model including an input/output circiut was performed. The results are in very good agreement with the experiments. The amplification is heralded by a seemingly chaotic noise rise. This noise is then amplified linearly when gain occurs. Amplification is found to take place very close to where the supercurrent is completely suppressed by the pump. This has previously been interpreted as loss of phaselock being the cause of the noise rise. However, the power spectra of the time-derivative of the phase show the still to be locked in the region of positive gain. Furthermore, computations of the Lyapunov exponents show one to be positive in the region where gain occurs reaching a maximum value at the parameters corresponding to maximum gain. We therefore conclude that chaotic noise is indeed present in Josephson junction parametric amplifiers where low-impedance devices like microbridges with negligible capacitance are used as the active elements. (orig.)

GaN Micromechanical Resonators with Meshed Metal Bottom Electrode.

Science.gov (United States)

Ansari, Azadeh; Liu, Che-Yu; Lin, Chien-Chung; Kuo, Hao-Chung; Ku, Pei-Cheng; Rais-Zadeh, Mina

2015-03-17

This work describes a novel architecture to realize high-performance gallium nitride (GaN) bulk acoustic wave (BAW) resonators. The method is based on the growth of a thick GaN layer on a metal electrode grid. The fabrication process starts with the growth of a thin GaN buffer layer on a Si (111) substrate. The GaN buffer layer is patterned and trenches are made and refilled with sputtered tungsten (W)/silicon dioxide (SiO₂) forming passivated metal electrode grids. GaN is then regrown, nucleating from the exposed GaN seed layer and coalescing to form a thick GaN device layer. A metal electrode can be deposited and patterned on top of the GaN layer. This method enables vertical piezoelectric actuation of the GaN layer using its largest piezoelectric coefficient ( d 33 ) for thickness-mode resonance. Having a bottom electrode also results in a higher coupling coefficient, useful for the implementation of acoustic filters. Growth of GaN on Si enables releasing the device from the frontside using isotropic xenon difluoride (XeF₂) etch and therefore eliminating the need for backside lithography and etching.

GaN Nanowire Devices: Fabrication and Characterization

Science.gov (United States)

Scott, Reum

The development of microelectronics in the last 25 years has been characterized by an exponential increase of the bit density in integrated circuits (ICs) with time. Scaling solid-state devices improves cost, performance, and power; as such, it is of particular interest for companies, who gain a market advantage with the latest technology. As a result, the microelectronics industry has driven transistor feature size scaling from 10 μm to ~30 nm during the past 40 years. This trend has persisted for 40 years due to optimization, new processing techniques, device structures, and materials. But when noting processor speeds from the 1970's to 2009 and then again in 2010, the implication would be that the trend has ceased. To address the challenge of shrinking the integrated circuit (IC), current research is centered on identifying new materials and devices that can supplement and/or potentially supplant it. Bottom-up methods tailor nanoscale building blocks---atoms, molecules, quantum dots, and nanowires (NWs)---to be used to overcome these limitations. The Group IIIA nitrides (InN, AlN, and GaN) possess appealing properties such as a direct band gap spanning the whole solar spectrum, high saturation velocity, and high breakdown electric field. As a result nanostructures and nanodevices made from GaN and related nitrides are suitable candidates for efficient nanoscale UV/ visible light emitters, detectors, and gas sensors. To produce devices with such small structures new fabrication methods must be implemented. Devices composed of GaN nanowires were fabricated using photolithography and electron beam lithography. The IV characteristics of these devices were noted under different illuminations and the current tripled from 4.8*10-7 A to 1.59*10 -6 A under UV light which persisted for at least 5hrs.

The Formation and Characterization of GaN Hexagonal Pyramids

Science.gov (United States)

Zhang, Shi-Ying; Xiu, Xiang-Qian; Lin, Zeng-Qin; Hua, Xue-Mei; Xie, Zi-Li; Zhang, Rong; Zheng, You-Dou

2013-05-01

GaN with hexagonal pyramids is fabricated using the photo-assisted electroless chemical etching method. Defective areas of the GaN substrate are selectively etched in a mixed solution of KOH and K2S2O8 under ultraviolet illumination, producing submicron-sized pyramids. Hexagonal pyramids on the etched GaN with well-defined {101¯1¯} facets and very sharp tips are formed. High-resolution x-ray diffraction shows that etched GaN with pyramids has a higher crystal quality, and micro-Raman spectra reveal a tensile stress relaxation in GaN with pyramids compared with normal GaN. The cathodoluminescence intensity of GaN after etching is significantly increased by three times, which is attributed to the reduction in the internal reflection, high-quality GaN with pyramids and the Bragg effect.

Performance Enhancement in L-Band Edfa Through Dual Stage Technique

Directory of Open Access Journals (Sweden)

S. W. Harun and H. Ahmad

2012-10-01

Full Text Available An experiment on gain enhancement in the long wavelength band erbium doped fiber amplifier (L-band EDFA is demonstrated. It uses a dual stage technique with dual forward pumping scheme. Compared to a conventional single stage amplifier, the small signal gain for 1580nm signal can be improved by 5.5dB without paying much noise figure penalty. The corresponding noise figure penalty was 0.3dB due to the insertion loss of the optical isolator. The optimum pump power ratio for the first pump is experimentally determined to be 33%. The maximum gain improvement of 8.3dB was obtained at a signal wavelength of 1568nm while signal and total pump powers were fixed at -30dBm and 92mW, respectively. The employment of dual stage amplifier system seems to play an important role in the development of practical L-band EDFA from the perspective of economical usage of pump power.Key Words:  erbium doped fibre; optical amplifier; L-band EDFA; dual stage EDFA; amplified spontaneous emission

X-ray absorption near-edge structure of GaN with high Mn concentration grown on SiC

Energy Technology Data Exchange (ETDEWEB)

Sancho-Juan, O; Cantarero, A; Garro, N; Cros, A [Materials Science Institute, University of Valencia, PO Box 22085, E46071 Valencia (Spain); Martinez-Criado, G; Salome, M; Susini, J [European Synchrotron Radiation Facility, 6 rue Jules Horowitz, 38043 Grenoble (France); Olguin, D [Dept. de Fisica, CINVESTAV-IPN, 07300 Mexico D F (Mexico); Dhar, S [Experimentalphysik, Universitaet Duisburg-Essen, Lotharstrasse 1, 47057 Duisburg (Germany)

2009-07-22

By means of x-ray absorption near-edge structure (XANES) several Ga{sub 1-x}Mn{sub x}N (0.03GaN samples consisted of different epilayers grown by molecular beam epitaxy on [0001] SiC substrates. The low mismatch between GaN and SiC allows for a good quality and homogeneity of the material. The measurements were performed in fluorescence mode around both the Ga and Mn K edges. All samples studied present a similar Mn ionization state, very close to 2+, and tetrahedral coordination. In order to interpret the near-edge structure, we have performed ab initio calculations using the full potential linear augmented plane wave method as implemented in the Wien2k code. The calculations show the appearance of a Mn bonding t{sub 2}arrow up band localized in the gap region, and the corresponding anti-bonding state t{sub 2}arrow down, which seem to be responsible for the double structure which appears at the pre-edge absorption region. The shoulders and main absorption peak of the XANES spectra are attributed to transitions from the Mn(1s) band to the conduction bands, which are partially dipole allowed because of the Mn(4p) contribution to these bands.

Comparing and Merging Observation Data from Ka-Band Cloud Radar, C-Band Frequency-Modulated Continuous Wave Radar and Ceilometer Systems

Directory of Open Access Journals (Sweden)

Liping Liu

2017-12-01

Full Text Available Field experiment in South China was undertaken to improve understanding of cloud and precipitation properties. Measurements of the vertical structures of non-precipitating and precipitating clouds were obtained using passive and active remote sensing equipment: a Ka-band cloud radar (CR system, a C-band frequency modulated continuous wave vertical pointing radar (CVPR, a microwave radiometer and a laser ceilometer (CEIL. CR plays a key role in high-level cloud observation, whereas CVPR is important for observing low- and mid-level clouds and heavy precipitation. CEIL helps us diminish the effects of “clear-sky” in the planetary boundary layer. The experiment took place in Longmen, Guangdong Province, China from May to September of 2016. This study focuses on evaluating the ability of the two radars to deliver consistent observation data and develops an algorithm to merge the CR, CVPR and CEIL data. Cloud echo base, thickness, frequency of observed cloud types and reflectivity vertical distributions are analyzed in the radar data. Comparisons between the collocated data sets show that reflectivity biases between the CR three operating modes are less than 2 dB. The averaged difference between CR and CVPR reflectivity can be reduced with attenuation correction to 3.57 dB from the original 4.82 dB. No systemic biases were observed between velocity data collected in the three CR modes and CVPR. The corrected CR reflectivity and velocity data were then merged with the CVPR data and CEIL data to fill in the gaps during the heavy precipitation periods and reduce the effects of Bragg scattering and fog on cloud observations in the boundary layer. Meanwhile, the merging of velocity data with different Nyquist velocities and resolutions diminishes velocity folding to provide fine-grain information about cloud and precipitation dynamics. The three daily periods in which low-level clouds tended to occur were at sunrise, noon and sunset and large

Gan-Hang tectonic belt and its geologic significance

International Nuclear Information System (INIS)

Deng Jiarui; Zhang Zhiping.

1989-01-01

Gan-Hang tectonic belt is predominantly controlled by Gan-Hang fracture zone. It is mainly composed of Yongfeng-Zhuji downwarping zone, Gan-Hang volcanic activity structural belt and Gan-Hang red basin downfaulted zone. Gan-Hang fracture zone is derived from evolution and development of Shaoxing-Jiangshan deep fracture. It is mainly composed of three deep and large fracture and Fuzhou-Yongfeng large fracture. The fracture zone is a long active belt, but in each active period the geologic structural patterns intensity, depth and forming time were not same. Gan-Hang tectonic belt possesses obvious inheritance. It has always maintained the character of the relative depression or low land since the Caledonian movement. This specific structural environment is favourable for uranium mineralization. At any rate, the formation of this uranium minerogenetic zone has been experiencing a long and complicated processes which were closely associated with long activity of Gan-Hang fracture zone

Review of wide band-gap semiconductors technology

Directory of Open Access Journals (Sweden)

Jin Haiwei

2016-01-01

Full Text Available Silicon carbide (SiC and gallium nitride (GaN are typical representative of the wide band-gap semiconductor material, which is also known as third-generation semiconductor materials. Compared with the conventional semiconductor silicon (Si or gallium arsenide (GaAs, wide band-gap semiconductor has the wide band gap, high saturated drift velocity, high critical breakdown field and other advantages; it is a highly desirable semiconductor material applied under the case of high-power, high-temperature, high-frequency, anti-radiation environment. These advantages of wide band-gap devices make them a hot spot of semiconductor technology research in various countries. This article describes the research agenda of United States and European in this area, focusing on the recent developments of the wide band-gap technology in the US and Europe, summed up the facing challenge of the wide band-gap technology.

GaN Bulk Growth and Epitaxy from Ca-Ga-N Solutions, Phase II

Data.gov (United States)

National Aeronautics and Space Administration — The innovations proposed here are Ka-band (38 GHz) group III-nitride power FETs and the dislocation density reducing epitaxial growth methods (LPE) needed for their...

Evaluation of genetic diversity in Chinese kale (Brassica oleracea L. var. alboglabra Bailey) by using rapid amplified polymorphic DNA and sequence-related amplified polymorphism markers.

Science.gov (United States)

Zhang, J; Zhang, L G

2014-02-14

Chinese kale is an original Chinese vegetable of the Cruciferae family. To select suitable parents for hybrid breeding, we thoroughly analyzed the genetic diversity of Chinese kale. Random amplified polymorphic DNA (RAPD) and sequence-related amplified polymorphism (SRAP) molecular markers were used to evaluate the genetic diversity across 21 Chinese kale accessions from AVRDC and Guangzhou in China. A total of 104 bands were detected by 11 RAPD primers, of which 66 (63.5%) were polymorphic, and 229 polymorphic bands (68.4%) were observed in 335 bands amplified by 17 SRAP primer combinations. The dendrogram showed the grouping of the 21 accessions into 4 main clusters based on RAPD data, and into 6 clusters based on SRAP and combined data (RAPD + SRAP). The clustering of accessions based on SRAP data was consistent with petal colors. The Mantel test indicated a poor fit for the RAPD and SRAP data (r = 0.16). These results have an important implication for Chinese kale germplasm characterization and improvement.

Increased p-type conductivity through use of an indium surfactant in the growth of Mg-doped GaN

Science.gov (United States)

Kyle, Erin C. H.; Kaun, Stephen W.; Young, Erin C.; Speck, James S.

2015-06-01

We have examined the effect of an indium surfactant on the growth of p-type GaN by ammonia-based molecular beam epitaxy. p-type GaN was grown at temperatures ranging from 700 to 780 °C with and without an indium surfactant. The Mg concentration in all films in this study was 4.5-6 × 1019 cm-3 as measured by secondary ion mass spectroscopy. All p-type GaN films grown with an indium surfactant had higher p-type conductivities and higher hole concentrations than similar films grown without an indium surfactant. The lowest p-type GaN room temperature resistivity was 0.59 Ω-cm, and the highest room temperature carrier concentration was 1.6 × 1018 cm-3. Fits of the temperature-dependent carrier concentration data showed a one to two order of magnitude lower unintentional compensating defect concentration in samples grown with the indium surfactant. Samples grown at higher temperature had a lower active acceptor concentration. Improvements in band-edge luminescence were seen by cathodoluminescence for samples grown with the indium surfactant, confirming the trends seen in the Hall data.

Semipolar InGaN quantum-well laser diode with integrated amplifier for visible light communications

KAUST Repository

Shen, Chao

2018-02-14

GaN-based semiconductor optical amplifier (SOA) and its integration with laser diode (LD) is an essential building block yet to be demonstrated for III-nitride photonic integrated circuits (PICs) at visible wavelength. This paper presents the InGaN/GaN quantum well (QW) based dual-section LD consisting of integrated amplifier and laser gain regions fabricated on a semipolar GaN substrate. The threshold current in the laser gain region was favorably reduced from 229mA to 135mA at SOA driving voltages, VSOA, of 0V and 6.25V, respectively. The amplification effect was measured based on a large gain of 5.7 dB at VSOA = 6.25V from the increased optical output power of 8.2 mW to 30.5 mW. Such integrated amplifier can be modulated to achieve Gbps data communication using on-off keying technique. The monolithically integrated amplifier-LD paves the way towards the III-nitride on-chip photonic system, providing a compact, low-cost, and multi-functional solution for applications such as smart lighting and visible light communications.

Semipolar InGaN quantum-well laser diode with integrated amplifier for visible light communications

KAUST Repository

Shen, Chao; Ng, Tien Khee; Lee, Changmin; Nakamura, Shuji; Speck, James S.; DenBaars, Steven P.; Alyamani, Ahmed Y.; El-Desouki, Munir M.; Ooi, Boon S.

2018-01-01

GaN-based semiconductor optical amplifier (SOA) and its integration with laser diode (LD) is an essential building block yet to be demonstrated for III-nitride photonic integrated circuits (PICs) at visible wavelength. This paper presents the InGaN/GaN quantum well (QW) based dual-section LD consisting of integrated amplifier and laser gain regions fabricated on a semipolar GaN substrate. The threshold current in the laser gain region was favorably reduced from 229mA to 135mA at SOA driving voltages, VSOA, of 0V and 6.25V, respectively. The amplification effect was measured based on a large gain of 5.7 dB at VSOA = 6.25V from the increased optical output power of 8.2 mW to 30.5 mW. Such integrated amplifier can be modulated to achieve Gbps data communication using on-off keying technique. The monolithically integrated amplifier-LD paves the way towards the III-nitride on-chip photonic system, providing a compact, low-cost, and multi-functional solution for applications such as smart lighting and visible light communications.

Growth and characterization of GaN nanostructures under various ammoniating time with fabricated Schottky gas sensor based on Si substrate

Science.gov (United States)

Abdullah, Q. N.; Ahmed, A. R.; Ali, A. M.; Yam, F. K.; Hassan, Z.; Bououdina, M.; Almessiere, M. A.

2018-05-01

This paper presents the investigation of the influence of the ammoniating time of GaN nanowires (NWs) on the crystalline structure, surface morphology, and optical characteristics. Morphological analysis indicates the growth of good quality and high density of NWs with diameters around 50 nm and lengths up to tens of microns after ammoniating for 30 min. Structural analysis shows that GaN NWs have a typical hexagonal wurtzite crystal structure. Raman spectroscopy confirms the formation of GaN compound with the presence of compressive stress. Photoluminescence (PL) measurements revealed two band emissions, an UV and a broad visible emission. Hydrogen sensor was subsequently fabricated by depositing Pt Schottky contact onto GaN NWs film. The sensor response was measured at various H2 concentrations ranged from 200 up to 1200 ppm at room temperature. It was found that the response increases significantly for low H2 concentration (200-300 ppm) to reach about 50% then increases smoothly to reach 60% at 1200 ppm. The as-fabricated sensor possesses higher performances as compared to similar devices reported in the literature.

Concept Design of a Multi-Band Shared Aperture Reflectarray/Reflector Antenna

Science.gov (United States)

Spence, Thomas; Cooley, Michael; Stenger, Peter; Park, Richard; Li, Lihua; Racette, Paul; Heymsfield, Gerald; Mclinden, Matthew

2016-01-01

A scalable dual-band (KaW) shared-aperture antenna system design has been developed as a proposed solution to meet the needs of the planned NASA Earth Science Aerosol, Clouds, and Ecosystem (ACE) mission. The design is comprised of a compact Cassegrain reflector/reflectarray with a fixed pointing W-band feed and a cross track scanned Ka-band Active Electronically Scanned Array (AESA). Critical Sub-scale prototype testing and flight tests have validated some of the key aspects of this innovative antenna design, including the low loss reflector/reflectarray surface.More recently the science community has expressed interest in a mission that offers the ability to measure precipitation in addition to clouds and aerosols. In this paper we present summaries of multiple designs that explore options for realizing a tri-frequency (KuKaW), shared-aperture antenna system to meet these science objectives. Design considerations include meeting performance requirements while emphasizing payload size, weight, prime power, and cost. The extensive trades and lessons learned from our previous dual-band ACE system development were utilized as the foundation for this work.

Investigation of optical gain in Eu-doped GaN thin film grown by OMVPE method

NARCIS (Netherlands)

Ha, N.N.; Nishikawa, A.; Fujiwara, Y.; Gregorkiewicz, T.

We prepare and optically characterize a thin film of GaN:Eu. Room temperature intense emission band at around 620 nm is observed, corresponding to 5D0 → 7F2 electronic dipole transition of Eu3+ ions in the GaN host material. At lower temperatures, three components, at 621, 622, and 623 nm, arising

Characterisation of Cs ion implanted GaN by DLTS

Science.gov (United States)

Ngoepe, P. N. M.; Meyer, W. E.; Auret, F. D.; Omotoso, E.; Hlatshwayo, T. T.; Diale, M.

2018-04-01

Deep level transient spectroscopy (DLTS) was used to characterise Cs implanted GaN grown by hydride vapour phase epitaxy (HVPE). This implantation was done at room temperature using energy of 360 keV to a fluence of 10-11 cm-2. A defect with activation energy of 0.19 eV below the conduction band and an apparent capture cross section of 1.1 × 10-15 cm2 was induced. This defect has previously been observed after rare earth element (Eu, Er and Pr) implantation. It has also been reported after electron, proton and He ion implantation.

Implantation doping of GaN

International Nuclear Information System (INIS)

Zolper, J.C.

1996-01-01

Ion implantation has played an enabling role in the realization of many high performance photonic and electronic devices in mature semiconductor materials systems such as Si and GaAs. This can also be expected to be the case in III-Nitride based devices as the material quality continues to improve. This paper reviews the progress in ion implantation processing of the III-Nitride materials, namely, GaN, AlN, InN and their alloys. Details are presented of the successful demonstrations of implant isolation as well as n- and p-type implantation doping of GaN. Implant doping has required activation annealing at temperatures in excess of 1,000 C. The nature of the implantation induced damage and its response to annealing is addressed using Rutherford Backscattering. Finally, results are given for the first demonstration of a GaN device fabricated using ion implantation doping, a GaN junction field effect transistor (JFET)

Thermal stability study of Cr/Au contact formed on n-type Ga-polar GaN, N-polar GaN, and wet-etched N-polar GaN surfaces

International Nuclear Information System (INIS)

Choi, Yunju; Kim, Yangsoo; Ahn, Kwang-Soon; Kim, Hyunsoo

2014-01-01

Highlights: • The Cr/Au contact on n-type Ga-polar (0 0 0 1) GaN, N-polar (0 0 0 −1) GaN, and wet-etched N-polar GaN were investigated. • Thermal annealing led to a significant degradation of contact formed on N-polar n-GaN samples. • Contact degradation was shown to be closely related to the increase in the electrical resistivity of n-GaN. • Out-diffusion of Ga and N atoms was clearly observed in N-polar samples. - Abstract: The electrical characteristics and thermal stability of a Cr/Au contact formed on n-type Ga-polar (0 0 0 1) GaN, N-polar GaN, and wet-etched N-polar GaN were investigated. As-deposited Cr/Au showed a nearly ohmic contact behavior for all samples, i.e., the specific contact resistance was 3.2 × 10 −3 , 4.3 × 10 −4 , and 1.1 × 10 −3 Ω cm 2 for the Ga-polar, flat N-polar, and roughened N-polar samples, respectively. However, thermal annealing performed at 250 °C for 1 min in a N 2 ambient led to a significant degradation of contact, i.e., the contact resistance increased by 186, 3260, and 2030% after annealing for Ga-polar, flat N-polar, and roughened N-polar samples, respectively. This could be due to the different disruption degree of Cr/Au and GaN interface after annealing, i.e., the insignificant interfacial reaction occurred in the Ga-polar sample, while out-diffusion of Ga and N atoms was clearly observed in N-polar samples

Thermal stability study of Cr/Au contact formed on n-type Ga-polar GaN, N-polar GaN, and wet-etched N-polar GaN surfaces

Energy Technology Data Exchange (ETDEWEB)

Choi, Yunju [School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center, Chonbuk National University, Jeonju 561-756 (Korea, Republic of); Suncheon Center, Korea Basic Science Institute, Suncheon 540-742 (Korea, Republic of); Kim, Yangsoo [Suncheon Center, Korea Basic Science Institute, Suncheon 540-742 (Korea, Republic of); Ahn, Kwang-Soon, E-mail: kstheory@ynu.ac.kr [School of Chemical Engineering, Yeungnam University, Gyeongsan, Gyeongbuk 712-749 (Korea, Republic of); Kim, Hyunsoo, E-mail: hskim7@jbnu.ac.kr [School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center, Chonbuk National University, Jeonju 561-756 (Korea, Republic of)

2014-10-30

Highlights: • The Cr/Au contact on n-type Ga-polar (0 0 0 1) GaN, N-polar (0 0 0 −1) GaN, and wet-etched N-polar GaN were investigated. • Thermal annealing led to a significant degradation of contact formed on N-polar n-GaN samples. • Contact degradation was shown to be closely related to the increase in the electrical resistivity of n-GaN. • Out-diffusion of Ga and N atoms was clearly observed in N-polar samples. - Abstract: The electrical characteristics and thermal stability of a Cr/Au contact formed on n-type Ga-polar (0 0 0 1) GaN, N-polar GaN, and wet-etched N-polar GaN were investigated. As-deposited Cr/Au showed a nearly ohmic contact behavior for all samples, i.e., the specific contact resistance was 3.2 × 10{sup −3}, 4.3 × 10{sup −4}, and 1.1 × 10{sup −3} Ω cm{sup 2} for the Ga-polar, flat N-polar, and roughened N-polar samples, respectively. However, thermal annealing performed at 250 °C for 1 min in a N{sub 2} ambient led to a significant degradation of contact, i.e., the contact resistance increased by 186, 3260, and 2030% after annealing for Ga-polar, flat N-polar, and roughened N-polar samples, respectively. This could be due to the different disruption degree of Cr/Au and GaN interface after annealing, i.e., the insignificant interfacial reaction occurred in the Ga-polar sample, while out-diffusion of Ga and N atoms was clearly observed in N-polar samples.

Determination of band offsets at GaN/single-layer MoS{sub 2} heterojunction

Energy Technology Data Exchange (ETDEWEB)

Tangi, Malleswararao; Mishra, Pawan; Ng, Tien Khee; Janjua, Bilal; Alias, Mohd Sharizal; Ooi, Boon S., E-mail: boon.ooi@kaust.edu.sa [Photonics Laboratory, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900 (Saudi Arabia); Hedhili, Mohamed Nejib; Anjum, Dalaver H. [Adavanced Nanofabrication Imaging and Characterization, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900 (Saudi Arabia); Tseng, Chien-Chih; Shi, Yumeng; Li, Lain-Jong [Physical Sciences and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900 (Saudi Arabia); Joyce, Hannah J. [Department of Engineering, University of Cambridge, 9 JJ Thomson Avenue, Cambridge, Cambridgeshire CB3 0FA (United Kingdom)

2016-07-18

We report the band alignment parameters of the GaN/single-layer (SL) MoS{sub 2} heterostructure where the GaN thin layer is grown by molecular beam epitaxy on CVD deposited SL-MoS{sub 2}/c-sapphire. We confirm that the MoS{sub 2} is an SL by measuring the separation and position of room temperature micro-Raman E{sup 1}{sub 2g} and A{sup 1}{sub g} modes, absorbance, and micro-photoluminescence bandgap studies. This is in good agreement with HRTEM cross-sectional analysis. The determination of band offset parameters at the GaN/SL-MoS{sub 2} heterojunction is carried out by high-resolution X-ray photoelectron spectroscopy accompanying with electronic bandgap values of SL-MoS{sub 2} and GaN. The valence band and conduction band offset values are, respectively, measured to be 1.86 ± 0.08 and 0.56 ± 0.1 eV with type II band alignment. The determination of these unprecedented band offset parameters opens up a way to integrate 3D group III nitride materials with 2D transition metal dichalcogenide layers for designing and modeling of their heterojunction based electronic and photonic devices.

Improved crystal quality of a-plane GaN with high- temperature 3-dimensional GaN buffer layers deposited by using metal-organic chemical vapor deposition

International Nuclear Information System (INIS)

Park, Sung Hyun; Moon, Dae Young; Kim, Bum Ho; Kim, Dong Uk; Chang, Ho Jun; Jeon, Heon Su; Yoon, Eui Joon; Joo, Ki Su; You, Duck Jae; Nanishi, Yasushi

2012-01-01

a-plane GaN on r-plane sapphire substrates suffers from high density defects and rough surfaces. To obtain pit-free a-plane GaN by metal-organic chemical vapor deposition, we intentionally grew high-temperature (HT) 3-dimensional (3D) GaN buffer layers on a GaN nucleation layer. The effects of the HT 3D GaN buffer layers on crystal quality and the surface morphology of a-plane GaN were studied. The insertion of a 3D GaN buffer layer with an optimum thickness was found to be an effective method to obtain pit-free a-plane GaN with improved crystalline quality on r-plane sapphire substrates. An a-plane GaN light emitting diode (LED) at an emission wavelength around 480 nm with negligible peak shift was successfully fabricated.

Attenuation Effects of Plasma on Ka-Band Wave Propagation in Various Gas and Pressure Environments

Directory of Open Access Journals (Sweden)

Joo Hwan Lee

2018-01-01

Full Text Available This work demonstrates attenuation effects of plasma on waves propagating in the 26.5–40 GHz range. The effect is investigated via experiments measuring the transmission between two Ka-band horn antennas set 30 cm apart. A dielectric-barrier-discharge (DBD plasma generator with a size of 200 mm × 100 mm × 70 mm and consisting of 20 layers of electrodes is placed between the two antennas. The DBD generator is placed in a 400 mm × 300 mm × 400 mm acrylic chamber so that the experiments can be performed for plasma generated under various conditions of gas and pressure, for instance, in air, Ar, and He environments at 0.001, 0.05, and 1 atm of pressure. Attenuation is calculated by the difference in the transmission level, with and without plasma, which is generated with a bias voltage of 20 kV in the 0.1–1.4 kHz range. Results show that the attenuation varies from 0.05 dB/m to 9.0 dB/m depending on the environment. Noble gas environments show higher levels of attenuation than air, and He is lossier than Ar. In all gas environments, attenuation increases as pressure increases. Finally, electromagnetic models of plasmas generated in various conditions are provided.

Impacts of oxidants in atomic layer deposition method on Al2O3/GaN interface properties

Science.gov (United States)

Taoka, Noriyuki; Kubo, Toshiharu; Yamada, Toshikazu; Egawa, Takashi; Shimizu, Mitsuaki

2018-01-01

The electrical interface properties of GaN metal-oxide-semiconductor (MOS) capacitors with an Al2O3 gate insulator formed by atomic layer deposition method using three kinds of oxidants were investigated by the capacitance-voltage technique, Terman method, and conductance method. We found that O3 and the alternate supply of H2O and O3 (AS-HO) are effective for reducing the interface trap density (D it) at the energy range of 0.15 to 0.30 eV taking from the conduction band minimum. On the other hand, we found that surface potential fluctuation (σs) induced by interface charges for the AS-HO oxidant is much larger than that for a Si MOS capacitor with a SiO2 layer formed by chemical vapor deposition despite the small D it values for the AS-HO oxidant compared with the Si MOS capacitor. This means that the total charged center density including the fixed charge density, charged slow trap density, and charged interface trap density for the GaN MOS capacitor is higher than that for the Si MOS capacitor. Therefore, σs has to be reduced to improve the performances and reliability of GaN devices with the Al2O3/GaN interfaces.

NASA's Evolution to K(sub a)- Band Space Communications for Near-Earth Spacecraft

Science.gov (United States)

McCarthy, Kevin P.; Stocklin, Frank J.; Geldzahler, Barry J.; Friedman, Daniel E.; Celeste, Peter B.

2010-01-01

Over the next several years, NASA plans to launch multiple earth-science missions which will send data from low-Earth orbits to ground stations at 1-3 Gbps, to achieve data throughputs of 5-40 terabits per day. These transmission rates exceed the capabilities of S-band and X-band frequency allocations used for science probe downlinks in the past. Accordingly, NASA is exploring enhancements to its space communication capabilities to provide the Agency's first Ka-band architecture solution for next generation missions in the near-earth regime. This paper describes the proposed Ka-band solution's drivers and concept, constraints and analyses which shaped that concept, and expansibility for future needs

Comparing electrical characteristics of in situ and ex situ Al2O3/GaN interfaces formed by metalorganic chemical vapor deposition

Science.gov (United States)

Chan, Silvia H.; Bisi, Davide; Tahhan, Maher; Gupta, Chirag; DenBaars, Steven P.; Keller, Stacia; Zanoni, Enrico; Mishra, Umesh K.

2018-04-01

Al2O3/n-GaN MOS-capacitors grown by metalorganic chemical vapor deposition with in-situ- and ex-situ-formed Al2O3/GaN interfaces were characterized. Capacitors grown entirely in situ exhibited ˜4 × 1012 cm-2 fewer positive fixed charges and up to ˜1 × 1013 cm-2 eV-1 lower interface-state density near the band-edge than did capacitors with ex situ oxides. When in situ Al2O3/GaN interfaces were reformed via the insertion of a 10-nm-thick GaN layer, devices exhibited behavior between the in situ and ex situ limits. These results illustrate the extent to which an in-situ-formed dielectric/GaN gate stack improves the interface quality and breakdown performance.

GaN Nanowire Arrays for High-Output Nanogenerators

KAUST Repository

Huang, Chi-Te

2010-04-07

Three-fold symmetrically distributed GaN nanowire (NW) arrays have been epitaxially grown on GaN/sapphire substrates. The GaN NW possesses a triangular cross section enclosed by (0001), (2112), and (2112) planes, and the angle between the GaN NW and the substrate surface is ∼62°. The GaN NW arrays produce negative output voltage pulses when scanned by a conductive atomic force microscope in contact mode. The average of piezoelectric output voltage was about -20 mV, while 5-10% of the NWs had piezoelectric output voltages exceeding -(0.15-0.35) V. The GaN NW arrays are highly stable and highly tolerate to moisture in the atmosphere. The GaN NW arrays demonstrate an outstanding potential to be utilized for piezoelectric energy generation with a performance probably better than that of ZnO NWs. © 2010 American Chemical Society.

Microwave and accelerator research. Final report on Grant DE-FG02-92ER40731

International Nuclear Information System (INIS)

Nation, John A.

2002-01-01

This report summarizes the main technical objectives and accomplishments during the life of the grant, and concludes with data on publications describing the research. The main activity was the development of very high power microwave sources, initially in X-band, and recent initial work on a Ka band TWT amplifier. There was additional activity on ferroelectric emitters. Highlights include the following: (1) The development of a relatively broad band microwave source yielding approx. 75 MW power at a power efficiency of 54% and an energy conversion efficiency of 43%. (2) The development of a ferroelectric cathode electron gun which yielded a beam current of up to 350 A at 500 kV. The device was shown to operate satisfactorily at a low repetition rate, limited by the available power supplies. The final beam power obtained exceeds that achieved elsewhere by several orders of magnitude. The gun development achieved was shown to give an electron beam suitable for high power X-band microwave sources with the demonstration of a 5-MW tunable X-band TWT single-stage amplifier. (3) Work was initiated on a Ka-Band TWT amplifier. Gains of over 30 dB were achieved at peak output powers of about 4 MW. Appendices include two submitted papers: Symmetric and asymmetric mode interaction in high-power traveling wave amplifiers: experiments and theory and High power microwave generation using a ferroelectric cathode electron gun

Structure and electronic properties of mixed (a + c) dislocation cores in GaN

Energy Technology Data Exchange (ETDEWEB)

Horton, M. K., E-mail: m.horton11@imperial.ac.uk [Department Materials, Imperial College London, Exhibition Road, London SW7 2AZ (United Kingdom); Rhode, S. L. [Department Materials Science and Metallurgy, University of Cambridge, Charles Babbage Road, Cambridge CB3 0FS (United Kingdom); Moram, M. A. [Department Materials, Imperial College London, Exhibition Road, London SW7 2AZ (United Kingdom); Department Materials Science and Metallurgy, University of Cambridge, Charles Babbage Road, Cambridge CB3 0FS (United Kingdom)

2014-08-14

Classical atomistic models and atomic-resolution scanning transmission electron microscopy studies of GaN films reveal that mixed (a + c)-type dislocations have multiple different core structures, including a dissociated structure consisting of a planar fault on one of the (12{sup ¯}10) planes terminated by two different partial dislocations. Density functional theory calculations show that all cores introduce localized states into the band gap, which affects device performance.

Structure and electronic properties of mixed (a + c) dislocation cores in GaN

International Nuclear Information System (INIS)

Horton, M. K.; Rhode, S. L.; Moram, M. A.

2014-01-01

Classical atomistic models and atomic-resolution scanning transmission electron microscopy studies of GaN films reveal that mixed (a + c)-type dislocations have multiple different core structures, including a dissociated structure consisting of a planar fault on one of the (12 ¯ 10) planes terminated by two different partial dislocations. Density functional theory calculations show that all cores introduce localized states into the band gap, which affects device performance

Bandwidth tunable amplifier for recording biopotential signals.

Science.gov (United States)

Hwang, Sungkil; Aninakwa, Kofi; Sonkusale, Sameer

2010-01-01

This paper presents a low noise, low power, bandwidth tunable amplifier for bio-potential signal recording applications. By employing depletion-mode pMOS transistor in diode configuration as a tunable sub pA current source to adjust the resistivity of MOS-Bipolar pseudo-resistor, the bandwidth is adjusted without any need for a separate band-pass filter stage. For high CMRR, PSRR and dynamic range, a fully differential structure is used in the design of the amplifier. The amplifier achieves a midband gain of 39.8dB with a tunable high-pass cutoff frequency ranging from 0.1Hz to 300Hz. The amplifier is fabricated in 0.18εm CMOS process and occupies 0.14mm(2) of chip area. A three electrode ECG measurement is performed using the proposed amplifier to show its feasibility for low power, compact wearable ECG monitoring application.

Large area electron beam pumped krypton fluoride laser amplifier

International Nuclear Information System (INIS)

Sethian, J.D.; Obenschain, S.P.; Gerber, K.A.; Pawley, C.J.; Serlin, V.; Sullivan, C.A.; Webster, W.; Deniz, A.V.; Lehecka, T.; McGeoch, M.W.; Altes, R.A.; Corcoran, P.A.; Smith, I.D.; Barr, O.C.

1997-01-01

Nike is a recently completed multi-kilojoule krypton fluoride (KrF) laser that has been built to study the physics of direct drive inertial confinement fusion. This paper describes in detail both the pulsed power and optical performance of the largest amplifier in the Nike laser, the 60 cm amplifier. This is a double pass, double sided, electron beam-pumped system that amplifies the laser beam from an input of 50 J to an output of up to 5 kJ. It has an optical aperture of 60 cm x 60 cm and a gain length of 200 cm. The two electron beams are 60 cm high x 200 cm wide, have a voltage of 640 kV, a current of 540 kA, and a flat top power pulse duration of 250 ns. A 2 kG magnetic field is used to guide the beams and prevent self-pinching. Each electron beam is produced by its own Marx/pulse forming line system. The amplifier has been fully integrated into the Nike system and is used on a daily basis for laser-target experiments. copyright 1997 American Institute of Physics

Silicon—a new substrate for GaN growth

Indian Academy of Sciences (India)

Unknown

of GaN devices based on silicon is the thermal mismatch of GaN and Si, which generates cracks. In 1998, the .... Considerable research is being carried out on GaN HEMTs at present. ... by InGaN/GaN multiquantum well in MOVPE was first.

Very broad bandwidth klystron amplifiers

Science.gov (United States)

Faillon, G.; Egloff, G.; Farvet, C.

Large surveillance radars use transmitters at peak power levels of around one MW and average levels of a few kW, and possibly several tens of kW, in S band, or even C band. In general, the amplification stage of these transmitters is a microwave power tube, frequently a klystron. Although designers often turn to klystrons because of their good peak and average power capabilities, they still see them as narrow band amplifiers, undoubtedly because of their resonant cavities which, at first sight, would seem highly selective. But, with the progress of recent years, it has now become quite feasible to use these tubes in installations requiring bandwidths in excess of 10 - 12 percent, and even 15 percent, at 1 MW peak for example, in S-band.

An integrated continuous class-F-1 mode power amplifier design approach for microwave enhanced portable diagnostic applications

OpenAIRE

Imtiaz, Azeem; Lees, Jonathan; Choi, Heungjae; Joshi, Lovleen Tina

2015-01-01

© 2015 IEEE. This paper presents a novel technique for designing a microwave power delivery system targeted at compact and portable microwave-assisted diagnostic healthcare applications to help tackle the growing problem of anti-microbial resistance. The arrangement comprises a purpose-built cylindrical cavity resonator within which, the bacterial samples are exposed, driven by a high-efficiency 10-W GaN amplifier, critically coupled via a simple, adjustable internal loop antenna. The experim...

Energy Level Alignment at Aqueous GaN and ZnO Interfaces

Science.gov (United States)

Hybertsen, Mark S.; Kharche, Neerav; Muckerman, James T.

2014-03-01

Electronic energy level alignment at semiconductor-electrolyte interfaces is fundamental to electrochemical activity. Motivated in particular by the search for new materials that can be more efficient for photocatalysis, we develop a first principles method to calculate this alignment at aqueous interfaces and demonstrate it for the specific case of non-polar GaN and ZnO interfaces with water. In the first step, density functional theory (DFT) based molecular dynamics is used to sample the physical interface structure and to evaluate the electrostatic potential step at the interface. In the second step, the GW approach is used to evaluate the reference electronic energy level separately in the bulk semiconductor (valence band edge energy) and in bulk water (the 1b1 energy level), relative to the internal electrostatic energy reference. Use of the GW approach naturally corrects for errors inherent in the use of Kohn-Sham energy eigenvalues to approximate the electronic excitation energies in each material. With this predicted interface alignment, specific redox levels in water, with potentials known relative to the 1b1 level, can then be compared to the semiconductor band edge positions. Our results will be discussed in the context of experiments in which photoexcited GaN and ZnO drive the hydrogen evolution reaction. Research carried out at Brookhaven National Laboratory under Contract No. DE-AC02-98CH10886 with the U.S. Department of Energy.

[Study on sequence characterized amplified region (SCAR) markers of Cornus officinalis].

Science.gov (United States)

Chen, Suiqing; Lu, Xiaolei; Wang, Lili

2011-05-01

To establish sequence characterized amplified region markers of Cornus officinalis and provide a scientific basis for molecular identification of C. officinalis. The random primer was screened through RAPD to obtain specific RAPD marker bands. The RAPD marker bands were separated, extracted, cloned and sequenced. Both ends of the sequence of RAPD marker bands were determined. A pair of specific primers was designed for conventional PCR reaction, and SCAR marker was acquired. Four pairs of primers were designed based on the sequence of RAPD marker bands. The DNA of the seven varieties of C. officinalis was amplified by using YST38 and YST43 primer. The results showed that seven varieties of C. officinalis were able to produce a single PCR product. It was an effective way to identify C. officinalis. The varieties with cylindrical and long-pear shape fruits amplified by YST38 showed a specific band, which could be used as the evidence of variety identification. Seven varieties of C. oficinalis were amplified by using primer YST39. But the size of band of the variety with spindly shape fruit (35,0400 bp) was about 300 bp, which was shorter than those of the variety with the other shape fruits of C. officinalis (650-700 bp). The variety with the spindly shape fruit could be identified through this difference. The primer YST92 could produce a fragment from 600-700 bp in the varieties with cylindrical and long-pear shape fruits, a fragment from 200-300 bp in the varieties with oval and short-cylindrical shape fruits and had no fragment in the varieties with long cylindrical, elliptic and short-pear shape fruits, which could be used to select the different shapes of C. officinalis. SCAR mark is established and can be used as the basis for breeding and distinguishing the verieties of C. officinalis.

Epitaxial GaN around ZnO nanopillars

Energy Technology Data Exchange (ETDEWEB)

Fikry, Mohamed; Scholz, Ferdinand [Institut fuer Optoelektronik, Universitaet Ulm, Albert-Einstein-Allee 45, 89081 Ulm (Germany); Madel, Manfred; Tischer, Ingo; Thonke, Klaus [Institut fuer Quantenmaterie, Universitaet Ulm, Albert-Einstein-Allee 45, 89081 Ulm (Germany)

2011-07-01

We report on an investigation of the epitaxial quality of GaN layers overgrown coaxially around ZnO nanopillars. In a first step, regularly arranged ZnO nanopillars were grown using pre-patterning by e-beam lithography or self-organized hexagonal polystyrene sphere masks. Alternatively, ZnO pillars were also successfully grown on top of GaN pyramids. In a second step, GaN layers were grown around the ZnO pillars by Metal Organic Vapor Phase Epitaxy. At growth temperatures above 800 C, the ZnO pillars are dissolved by the hydrogen carrier gas leaving hollow GaN nanotubes. Characterization involved photoluminescence (PL), scanning electron microscopy and cathodoluminescence. The fair quality of the deposited GaN layers is confirmed by a sharp low temperature PL peak at 3.48 eV attributed to the donor bound exciton emission. Further peaks at 3.42 eV and 3.29 eV show the possible existence of basal plane and prismatic stacking faults.

Compressed sensing based joint-compensation of power amplifier's distortions in OFDMA cognitive radio systems

KAUST Repository

Ali, Anum Z.

2013-12-01

Linearization of user equipment power amplifiers driven by orthogonal frequency division multiplexing signals is addressed in this paper. Particular attention is paid to the power efficient operation of an orthogonal frequency division multiple access cognitive radio system and realization of such a system using compressed sensing. Specifically, precompensated overdriven amplifiers are employed at the mobile terminal. Over-driven amplifiers result in in-band distortions and out of band interference. Out of band interference mostly occupies the spectrum of inactive users, whereas the in-band distortions are mitigated using compressed sensing at the receiver. It is also shown that the performance of the proposed scheme can be further enhanced using multiple measurements of the distortion signal in single-input multi-output systems. Numerical results verify the ability of the proposed setup to improve error vector magnitude, bit error rate, outage capacity and mean squared error. © 2011 IEEE.

Compressed sensing based joint-compensation of power amplifier's distortions in OFDMA cognitive radio systems

KAUST Repository

Ali, Anum Z.; Hammi, Oualid; Al-Naffouri, Tareq Y.

2013-01-01

Linearization of user equipment power amplifiers driven by orthogonal frequency division multiplexing signals is addressed in this paper. Particular attention is paid to the power efficient operation of an orthogonal frequency division multiple access cognitive radio system and realization of such a system using compressed sensing. Specifically, precompensated overdriven amplifiers are employed at the mobile terminal. Over-driven amplifiers result in in-band distortions and out of band interference. Out of band interference mostly occupies the spectrum of inactive users, whereas the in-band distortions are mitigated using compressed sensing at the receiver. It is also shown that the performance of the proposed scheme can be further enhanced using multiple measurements of the distortion signal in single-input multi-output systems. Numerical results verify the ability of the proposed setup to improve error vector magnitude, bit error rate, outage capacity and mean squared error. © 2011 IEEE.

Buffer optimization for crack-free GaN epitaxial layers grown on Si(1 1 1) substrate by MOCVD

International Nuclear Information System (INIS)

Arslan, Engin; Ozbay, Ekmel; Ozturk, Mustafa K; Ozcelik, Suleyman; Teke, Ali

2008-01-01

We report the growth of GaN films on the Si(1 1 1) substrate by metalorganic chemical vapour phase deposition (MOCVD). Different buffer layers were used to investigate their effects on the structural and optical properties of GaN layers. A series of GaN layers were grown on Si(1 1 1) with different buffer layers and buffer thicknesses and were characterized by Nomarski microscopy, atomic force microscopy, high-resolution x-ray diffraction (XRD) and photoluminescence (PL) measurements. We first discuss the optimization of the LT-AlN/HT-AlN/Si(1 1 1) templates and then the optimization of the graded AlGaN intermediate layers. In order to prevent stress relaxation, step-graded AlGaN layers were introduced along with a crack-free GaN layer of thickness exceeding 2.6 μm. The XRD and PL measurements results confirmed that a wurtzite GaN was successfully grown. The resulting GaN film surfaces were flat, mirror-like and crack-free. The mosaic structure in the GaN layers was investigated. With a combination of Williamson-Hall measurements and the fitting of twist angles, it was found that the buffer thickness determines the lateral coherence length, vertical coherence length, as well as the tilt and twist of the mosaic blocks in GaN films. The PL spectra at 8 K show that a strong band edge photoluminescence of GaN on Si (1 1 1) emits light at an energy of 3.449 eV with a full width at half maximum (FWHM) of approximately 16 meV. At room temperature, the peak position and FWHM of this emission become 3.390 eV and 58 meV, respectively. The origin of this peak was attributed to the neutral donor bound exciton. It was found that the optimized total thickness of the AlN and graded AlGaN layers played a very important role in the improvement of quality and in turn reduced the cracks during the growth of GaN/Si(1 1 1) epitaxial layers

A coupler for parasitic mode diagnosis in an X-band triaxial klystron amplifier

Directory of Open Access Journals (Sweden)

Wei Zhang

2017-10-01

Full Text Available The traditional methods of parasitic mode excitation diagnosis in an X-band triaxial klystron amplifier (TKA meet two difficulties: limited installation space and vacuum sealing. In order to solve these issues, a simple and compact coupler with good sealing performance, which can prevent air flow between the main and the auxiliary waveguides, is proposed and investigated experimentally. The coupler is designed with the aperture diffraction theory and the finite-different time-domain (FDTD method. The designed coupler consists of a main coaxial waveguide (for microwave transmission and a rectangular auxiliary waveguide (for parasitic mode diagnosis. The entire coupler structure has been fabricated by macromolecule polymer which is transparent to microwave signal in frequency range of X-band. The metal coating of about 200 microns has been performed through electroplating technique to ensure that the device operates well at high power. A small aperture is made in the metal coating. Hence, microwave can couple through the hole and the wave-transparent medium, whereas air flow is blocked by the wave-transparent medium. The coupling coefficient is analyzed and simulated with CST software. The coupler model is also included in particle-in-cell (PIC simulation with CHIPIC software and the associated parasitic mode excitation is studied. A frequency component of 11.46 GHz is observed in the FFT of the electric field of the drift tube and its corresponding competition mode appears as TE61 mode according to the electric field distribution. Besides, a frequency component of 10.8 GHz is also observed in the FFT of the electric field. After optimization of TE61 mode suppression, an experiment of the TKA with the designed coupler is carried out and the parasitic mode excitation at 10.8 GHz is observed through the designed coupler.

Dislocation-induced nanoparticle decoration on a GaN nanowire.

Science.gov (United States)

Yang, Bing; Yuan, Fang; Liu, Qingyun; Huang, Nan; Qiu, Jianhang; Staedler, Thorsten; Liu, Baodan; Jiang, Xin

2015-02-04

GaN nanowires with homoepitaxial decorated GaN nanoparticles on their surface along the radial direction have been synthesized by means of a chemical vapor deposition method. The growth of GaN nanowires is catalyzed by Au particles via the vapor-liquid-solid (VLS) mechanism. Screw dislocations are generated along the radial direction of the nanowires under slight Zn doping. In contrast to the metal-catalyst-assisted VLS growth, GaN nanoparticles are found to prefer to nucleate and grow at these dislocation sites. High-resolution transmission electron microscopy (HRTEM) analysis demonstrates that the GaN nanoparticles possess two types of epitaxial orientation with respect to the corresponding GaN nanowire: (I) [1̅21̅0]np//[1̅21̅0]nw, (0001)np//(0001)nw; (II) [1̅21̅3]np//[12̅10]nw, (101̅0)np//(101̅0)nw. An increased Ga signal in the energy-dispersive spectroscopy (EDS) profile lines of the nanowires suggests GaN nanoparticle growth at the edge surface of the wires. All the crystallographic results confirm the importance of the dislocations with respect to the homoepitaxial growth of the GaN nanoparticles. Here, screw dislocations situated on the (0001) plane provide the self-step source to enable nucleation of the GaN nanoparticles.

Leakage current analysis for dislocations in Na-flux GaN bulk single crystals by conductive atomic force microscopy

Science.gov (United States)

Hamachi, T.; Takeuchi, S.; Tohei, T.; Imanishi, M.; Imade, M.; Mori, Y.; Sakai, A.

2018-04-01

The mechanisms associated with electrical conduction through individual threading dislocations (TDs) in a Na-flux GaN crystal grown with a multipoint-seed-GaN technique were investigated by conductive atomic force microscopy (C-AFM). To focus on individual TDs, dislocation-related etch pits (DREPs) were formed on the Na-flux GaN surface by wet chemical etching, after which microscopic Pt electrodes were locally fabricated on the DREPs to form conformal contacts to the Na-flux GaN crystal, using electron beam assisted deposition. The C-AFM data clearly demonstrate that the leakage current flows through the individual TD sites. It is also evident that the leakage current and the electrical conduction mechanism vary significantly based on the area within the Na-flux GaN crystal where the TDs are formed. These regions include the c-growth sector (cGS) in which the GaN grows in the [0001 ] direction on top of the point-seed with a c-plane growth front, the facet-growth sector (FGS) in which the GaN grows with {10 1 ¯ 1 } facets on the side of the cGS, the boundary region between the cGS and FGS (BR), and the coalescence boundary region between FGSs (CBR). The local current-voltage (I-V) characteristics of the specimen demonstrate space charge limited current conduction and conduction related to band-like trap states associated with TDs in the FGS, BR, and CBR. A detailed analysis of the I-V data indicates that the electrical conduction through TDs in the cGS may proceed via the Poole-Frenkel emission mechanism.

Design studies of the Ku-band, wide-band Gyro-TWT amplifier

Science.gov (United States)

Jung, Sang Wook; Lee, Han Seul; Jang, Kwong Ho; Choi, Jin Joo; Hong, Yong Jun; Shin, Jin Woo; So, Jun Ho; Won, Jong Hyo

2014-02-01

This paper reports a Ku-band, wide band Gyrotron-Traveling-wave-tube(Gyro-TWT) that is currently being developed at Kwangwoon University. The Gyro-TWT has a two stage linear tapered interaction circuit to obtain a wide operating bandwidth. The linearly-tapered interaction circuit and nonlinearly-tapered magnetic field gives the Gyro-TWT a wide operating bandwidth. The Gyro-TWT bandwidth is 23%. The 2d-Particle-in-cell(PIC) and MAGIC2d code simulation results are 17.3 dB and 24.34 kW, respectively for the maximum saturated output power. A double anode MIG was simulated with E-Gun code. The results were 0.7 for the transvers to the axial beam velocity ratio (=alpha) and a 2.3% axial velocity spread at 50 kV and 4 A. A magnetic field profile simulation was performed by using the Poisson code to obtain the grazing magnetic field of the entire interaction circuit with Poisson code.

Low noise InP-based MMIC receivers for W-band

Science.gov (United States)

Leonard, Regis F.

1991-01-01

A program to develop a monolithic W-band low noise amplifier (a critical element in any W-band communications, sensors, or radar application) is described. Goals of the program include a completely monolithic low noise amplifier, less than a 3.5 dB noise figure, and a monolithic mixer suitable for integration with the LNA.

Large electron capture-cross-section of the major nonradiative recombination centers in Mg-doped GaN epilayers grown on a GaN substrate

Science.gov (United States)

Chichibu, S. F.; Shima, K.; Kojima, K.; Takashima, S.; Edo, M.; Ueno, K.; Ishibashi, S.; Uedono, A.

2018-05-01

Complementary time-resolved photoluminescence and positron annihilation measurements were carried out at room temperature on Mg-doped p-type GaN homoepitaxial films for identifying the origin and estimating the electron capture-cross-section ( σ n ) of the major nonradiative recombination centers (NRCs). To eliminate any influence by threading dislocations, free-standing GaN substrates were used. In Mg-doped p-type GaN, defect complexes composed of a Ga-vacancy (VGa) and multiple N-vacancies (VNs), namely, VGa(VN)2 [or even VGa(VN)3], are identified as the major intrinsic NRCs. Different from the case of 4H-SiC, atomic structures of intrinsic NRCs in p-type and n-type GaN are different: VGaVN divacancies are the major NRCs in n-type GaN. The σ n value approximately the middle of 10-13 cm2 is obtained for VGa(VN)n, which is larger than the hole capture-cross-section (σp = 7 × 10-14 cm2) of VGaVN in n-type GaN. Combined with larger thermal velocity of an electron, minority carrier lifetime in Mg-doped GaN becomes much shorter than that of n-type GaN.

An evidence of defect gettering in GaN

Energy Technology Data Exchange (ETDEWEB)

Majid, Abdul [Advance Materials Physics Laboratory, Physics Department, Quaid-i-Azam University, Islamabad (Pakistan); State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083 (China); Ali, Akbar [Advance Materials Physics Laboratory, Physics Department, Quaid-i-Azam University, Islamabad (Pakistan)], E-mail: akbar@qau.edu.pk; Zhu, J.J.; Wang, Y.T.; Yang, H. [State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083 (China)

2008-07-01

The effect of Neon ion implantation on the structural and optical properties of MOCVD grown GaN was studied. X-ray diffraction and low temperature photoluminescence measurements were carried out on the implanted samples annealed at 900 deg. C. The peak at 3.41 eV exhibited an interesting behavior in as-grown and the implanted samples. Annealing has enhanced the intensity of this peak in as-grown samples, but suppressed in all the implanted samples. Capturing of defects by cavities during gettering process is interpreted as the reason for the observed behavior of this luminescence peak. Implantation dose of 5x10{sup 15} ions/cm{sup 2} caused the complete quenching of yellow band luminescence.

An evidence of defect gettering in GaN

International Nuclear Information System (INIS)

Majid, Abdul; Ali, Akbar; Zhu, J.J.; Wang, Y.T.; Yang, H.

2008-01-01

The effect of Neon ion implantation on the structural and optical properties of MOCVD grown GaN was studied. X-ray diffraction and low temperature photoluminescence measurements were carried out on the implanted samples annealed at 900 deg. C. The peak at 3.41 eV exhibited an interesting behavior in as-grown and the implanted samples. Annealing has enhanced the intensity of this peak in as-grown samples, but suppressed in all the implanted samples. Capturing of defects by cavities during gettering process is interpreted as the reason for the observed behavior of this luminescence peak. Implantation dose of 5x10 15 ions/cm 2 caused the complete quenching of yellow band luminescence

Increased p-type conductivity through use of an indium surfactant in the growth of Mg-doped GaN

Energy Technology Data Exchange (ETDEWEB)

Kyle, Erin C. H., E-mail: erinkyle@engineering.ucsb.edu; Kaun, Stephen W.; Young, Erin C.; Speck, James S. [Materials Department, University of California, Santa Barbara, California 93106 (United States)

2015-06-01

We have examined the effect of an indium surfactant on the growth of p-type GaN by ammonia-based molecular beam epitaxy. p-type GaN was grown at temperatures ranging from 700 to 780 °C with and without an indium surfactant. The Mg concentration in all films in this study was 4.5–6 × 10{sup 19} cm{sup −3} as measured by secondary ion mass spectroscopy. All p-type GaN films grown with an indium surfactant had higher p-type conductivities and higher hole concentrations than similar films grown without an indium surfactant. The lowest p-type GaN room temperature resistivity was 0.59 Ω-cm, and the highest room temperature carrier concentration was 1.6 × 10{sup 18} cm{sup −3}. Fits of the temperature-dependent carrier concentration data showed a one to two order of magnitude lower unintentional compensating defect concentration in samples grown with the indium surfactant. Samples grown at higher temperature had a lower active acceptor concentration. Improvements in band-edge luminescence were seen by cathodoluminescence for samples grown with the indium surfactant, confirming the trends seen in the Hall data.

Synthesis of p-type GaN nanowires.

Science.gov (United States)

Kim, Sung Wook; Park, Youn Ho; Kim, Ilsoo; Park, Tae-Eon; Kwon, Byoung Wook; Choi, Won Kook; Choi, Heon-Jin

2013-09-21

GaN has been utilized in optoelectronics for two decades. However, p-type doping still remains crucial for realization of high performance GaN optoelectronics. Though Mg has been used as a p-dopant, its efficiency is low due to the formation of Mg-H complexes and/or structural defects in the course of doping. As a potential alternative p-type dopant, Cu has been recognized as an acceptor impurity for GaN. Herein, we report the fabrication of Cu-doped GaN nanowires (Cu:GaN NWs) and their p-type characteristics. The NWs were grown vertically via a vapor-liquid-solid (VLS) mechanism using a Au/Ni catalyst. Electrical characterization using a nanowire-field effect transistor (NW-FET) showed that the NWs exhibited n-type characteristics. However, with further annealing, the NWs showed p-type characteristics. A homo-junction structure (consisting of annealed Cu:GaN NW/n-type GaN thin film) exhibited p-n junction characteristics. A hybrid organic light emitting diode (OLED) employing the annealed Cu:GaN NWs as a hole injection layer (HIL) also demonstrated current injected luminescence. These results suggest that Cu can be used as a p-type dopant for GaN NWs.

Modeling of Yb3+-sensitized Er3+-doped silica waveguide amplifiers

DEFF Research Database (Denmark)

Lester, Christian; Bjarklev, Anders Overgaard; Rasmussen, Thomas

1995-01-01

A model for Yb3+-sensitized Er3+-doped silica waveguide amplifiers is described and numerically investigated in the small-signal regime. The amplified spontaneous emission in the ytterbium-band and the quenching process between excited erbium ions are included in the model. For pump wavelengths...

Interaction of GaN epitaxial layers with atomic hydrogen

Energy Technology Data Exchange (ETDEWEB)

Losurdo, M.; Giangregorio, M.M.; Capezzuto, P.; Bruno, G.; Namkoong, G.; Doolittle, W.A.; Brown, A.S

2004-08-15

GaN surface passivation processes are still under development and among others hydrogen treatments are investigated. In this study, we use non-destructive optical and electrical probes such as spectroscopic ellipsometry (SE) and surface potential Kelvin probe microscopy (SP-KPM) in conjunction with non-contact atomic force microscopy (AFM) for the study of the different reactivity of Ga-polar and N-polar GaN epitaxial layers with atomic hydrogen. The GaN epitaxial layers are grown by molecular beam epitaxy on sapphire (0 0 0 1) substrates, and GaN and AlN buffer layers are used to grow N-polar and Ga-polar films, respectively. The atomic hydrogen is produced by a remote rf (13.56 MHz) H{sub 2} plasma in order to rule out any ion bombardment of the GaN surface and make the interaction chemical. It is found that the interaction of GaN surfaces with atomic hydrogen depends on polarity, with N-polar GaN exhibiting greater reactivity. Furthermore, it is found that atomic hydrogen is effective in the passivation of grain boundaries and surface defects states.

Interaction of GaN epitaxial layers with atomic hydrogen

International Nuclear Information System (INIS)

Losurdo, M.; Giangregorio, M.M.; Capezzuto, P.; Bruno, G.; Namkoong, G.; Doolittle, W.A.; Brown, A.S.

2004-01-01

GaN surface passivation processes are still under development and among others hydrogen treatments are investigated. In this study, we use non-destructive optical and electrical probes such as spectroscopic ellipsometry (SE) and surface potential Kelvin probe microscopy (SP-KPM) in conjunction with non-contact atomic force microscopy (AFM) for the study of the different reactivity of Ga-polar and N-polar GaN epitaxial layers with atomic hydrogen. The GaN epitaxial layers are grown by molecular beam epitaxy on sapphire (0 0 0 1) substrates, and GaN and AlN buffer layers are used to grow N-polar and Ga-polar films, respectively. The atomic hydrogen is produced by a remote rf (13.56 MHz) H 2 plasma in order to rule out any ion bombardment of the GaN surface and make the interaction chemical. It is found that the interaction of GaN surfaces with atomic hydrogen depends on polarity, with N-polar GaN exhibiting greater reactivity. Furthermore, it is found that atomic hydrogen is effective in the passivation of grain boundaries and surface defects states

Low-Profile Multiband and Flush-Mountable Wideband Antennas for HF/VHF and K/Ka Band Applications

Science.gov (United States)

Garrido Lopez, David

emissions are planned. Following the same trend of antenna system size reduction with extension of capabilities in a congested spectral environment, the millimeter wave spectrum is explored next. Specifically, antenna systems for wideband amplitude only (AO) direction finding (DF) are thoroughly considered. Theory and design considerations are developed to fill gaps in open literature. Typical sources of errors are theoretically analyzed, and a discussion on limitations and advantages of different AO DF architectures is given. Practical millimeter wave realizations of AO DF antenna front-ends in the K/Ka/Q bands (18-45 GHz) are developed using two different architectures: a passive phased-array and a squinted antenna system. For the former, a tightly coupled two-element tapered slot antenna (TSA) array with a stacked arrangement is developed. A novel enclosure of the array inside an absorbing cavity is proposed and improved system performance with flush mounted configuration is demonstrated. The squinted antenna system avoids the use of a beamformer, therefore reducing insertion loss and amplitude/phase imbalances to reduce DF errors. For design robustness, the same TSA element used in the phased-array configuration is used. A novel tapered cavity is also developed to stabilize H-plane radiation patterns and suppress sidelobes. It is seen that the squinted antenna AO DF front-end has better performance than the phased-array antenna system at the expense of larger size.

Induced defects in neutron irradiated GaN single crystals

International Nuclear Information System (INIS)

Park, I. W.; Koh, E. K.; Kim, Y. M.; Choh, S. H.; Park, S. S.; Kim, B. G.; Sohn, J. M.

2005-01-01

The local structure of defects in undoped, Si-doped, and neutron irradiated free standing GaN bulk crystals, grown by hydride vapor phase epitaxy, has been investigated by employing Raman scattering and cathodoluminescence. The GaN samples were irradiated to a dose of 2 x 10 17 neutrons in an atomic reactor at Korea Atomic Energy Research Institute. There was no appreciable change in the Raman spectra for undoped GaN samples before and after neutron irradiation. However, a forbidden transition, A 1 (TO) mode, appeared for a neutron irradiated Si-doped GaN crystal. Cathodoluminescence spectrum for the neutron irradiated Si-doped GaN crystal became much more broadened than that for the unirradiated one. The experimental results reveal the generation of defects with locally deformed structure in the wurtzite Si-doped GaN single crystal

Tunable Balun Low-Noise Amplifier in 65nm CMOS Technology

Directory of Open Access Journals (Sweden)

J. Sturm

2014-04-01

Full Text Available The presented paper includes the design and implementation of a 65 nm CMOS low-noise amplifier (LNA based on inductive source degeneration. The amplifier is realized with an active balun enabling a single-ended input which is an important requirement for low-cost system on chip implementations. The LNA has a tunable bandpass characteristics from 4.7 GHz up to 5.6 GHz and a continuously tunable gain from 22 dB down to 0 dB, which enables the required flexibility for multi-standard, multi-band receiver architectures. The gain and band tuning is realized with an optimized tunable active resistor in parallel to a tunable L-C tank amplifier load. The amplifier achieves an IIP3 linearity of -8dBm and a noise figure of 2.7 dB at the highest gain and frequency setting with a low power consumption of 10 mW. The high flexibility of the proposed LNA structure together with the overall good performance makes it well suited for future multi-standard low-cost receiver front-ends.

ARM MJO Investigation Experiment on Gan Island (AMIE-Gan) Science Plan

Energy Technology Data Exchange (ETDEWEB)

Long, CL; Del Genio, A; Deng, M; Fu, X; Gustafson, W; Houze, R; Jakob, C; Jensen, M; Johnson, R; Liu, X; Luke, E; May, P; McFarlane, S; Minnis, P; Schumacher, C; Vogelmann, A; Wang, Y; Webster, P; Xie, S; Zhang, C

2011-04-11

The overarching campaign, which includes the ARM Mobile Facility 2 (AMF2) deployment in conjunction with the Dynamics of the Madden-Julian Oscillation (DYNAMO) and the Cooperative Indian Ocean experiment on intraseasonal variability in the Year 2011 (CINDY2011) campaigns, is designed to test several current hypotheses regarding the mechanisms responsible for Madden-Julian Oscillation (MJO) initiation and propagation in the Indian Ocean area. The synergy between the proposed AMF2 deployment with DYNAMO/CINDY2011, and the corresponding funded experiment on Manus, combine for an overarching ARM MJO Investigation Experiment (AMIE) with two components: AMF2 on Gan Island in the Indian Ocean (AMIE-Gan), where the MJO initiates and starts its eastward propagation; and the ARM Manus site (AMIE-Manus), which is in the general area where the MJO usually starts to weaken in climate models. AMIE-Gan will provide measurements of particular interest to Atmospheric System Research (ASR) researchers relevant to improving the representation of MJO initiation in climate models. The framework of DYNAMO/CINDY2011 includes two proposed island-based sites and two ship-based locations forming a square pattern with sonde profiles and scanning precipitation and cloud radars at both island and ship sites. These data will be used to produce a Variational Analysis data set coinciding with the one produced for AMIE-Manus. The synergy between AMIE-Manus and AMIE-Gan will allow studies of the initiation, propagation, and evolution of the convective cloud population within the framework of the MJO. As with AMIE-Manus, AMIE-Gan/DYNAMO also includes a significant modeling component geared toward improving the representation of MJO initiation and propagation in climate and forecast models. This campaign involves the deployment of the second, marine-capable, AMF; all of the included measurement systems; and especially the scanning and vertically pointing radars. The campaign will include sonde

Polarization Raman spectroscopy of GaN nanorod bundles

International Nuclear Information System (INIS)

Tite, T.; Lee, C. J.; Chang, Y.-M.

2010-01-01

We performed polarization Raman spectroscopy on single wurtzite GaN nanorod bundles grown by plasma-assisted molecular beam epitaxy. The obtained Raman spectra were compared with those of GaN epilayer. The spectral difference between the GaN nanorod bundles and epilayer reveals the relaxation of Raman selection rules in these GaN nanorod bundles. The deviation of polarization-dependent Raman spectroscopy from the prediction of Raman selection rules is attributed to both the orientation of the crystal axis with respect to the polarization vectors of incident and scattered light and the structural defects in the merging boundary of GaN nanorods. The presence of high defect density induced by local strain at the merging boundary was further confirmed by transmission electron microscopy. The averaged defect interspacing was estimated to be around 3 nm based on the spatial correlation model.

Determination of carrier diffusion length in GaN

Science.gov (United States)

Hafiz, Shopan; Zhang, Fan; Monavarian, Morteza; Avrutin, Vitaliy; Morkoç, Hadis; Özgür, Ümit; Metzner, Sebastian; Bertram, Frank; Christen, Jürgen; Gil, Bernard

2015-01-01

Diffusion lengths of photo-excited carriers along the c-direction were determined from photoluminescence (PL) and cross-sectional cathodoluminescence (CL) measurements in p- and n-type GaN epitaxial layers grown on c-plane sapphire by metal-organic chemical vapor deposition. The investigated samples incorporate a 6 nm thick In0.15Ga0.85N active layer capped with either 500 nm p-GaN or 1500 nm n-GaN. The top GaN layers were etched in steps and PL from the InGaN active region and the underlying layers was monitored as a function of the top GaN thickness upon photo-generation near the surface region by above bandgap excitation. Taking into consideration the absorption in the top GaN layer as well as active and underlying layers, the diffusion lengths at 295 K and at 15 K were measured to be 93 ± 7 nm and 70 ± 7 nm for Mg-doped p-type GaN and 432 ± 30 nm and 316 ± 30 nm for unintentionally doped n-type GaN, respectively, at photogenerated carrier densities of 4.2 × 1018 cm-3 using PL spectroscopy. CL measurements of the unintentionally doped n-type GaN layer at much lower carrier densities of 1017 cm-3 revealed a longer diffusion length of 525 ± 11 nm at 6 K.

Schottky contacts to polar and nonpolar n-type GaN

Energy Technology Data Exchange (ETDEWEB)

Kim, Hogyoung [Hanbat National University, Daejeon (Korea, Republic of); Phark, Soohyon [Max-Planck-Institut fur Mikrostrukturphysik, Halle (Germany); Song, Keunman [Korea Advanced Nano Fab Center, Suwon (Korea, Republic of); Kim, Dongwook [Ewha Woman' s University, Seoul (Korea, Republic of)

2012-01-15

Using the current-voltage measurements, we observed the barrier heights of c-plane GaN in Pt and Au Schottky contacts to be higher than those of a-plane GaN. However, the barrier height of c-plane GaN was lower than that of a-plane GaN in the Ti Schottky contacts. The N/Ga ratio calculated by integrating the X-ray photoelectron spectroscopy (XPS) spectra of Ga 3d and N 1s core levels showed that c-plane GaN induced more Ga vacancies near the interface than a-plane GaN in the Ti Schottky contacts, reducing the effective barrier height through an enhancement of the tunneling probability.

Gain-clamping techniques in two-stage double-pass L-band EDFA

Indian Academy of Sciences (India)

Two designs of long-wavelength band erbium-doped fiber amplifier (L-band. EDFA) for gain clamping in double-pass systems are demonstrated and compared. The first design is based on ring laser technique where a backward amplified spontaneous emis- sion (ASE) from the second stage is routed into the feedback loop ...

Measurement of Solid-State Optical Refrigeration by Two-Band Differential Luminescence Thermometry

Science.gov (United States)

2010-03-01

high speed transimpedance amplifier that generates an output voltage proportional to the difference in the optical power in bands A and D, i.e., IA...bands in the luminescence spectrum by inter- ference filters, in combination with large core optical fi- bers and highly amplified balanced

GaN epitaxial layers grown on multilayer graphene by MOCVD

Science.gov (United States)

Li, Tianbao; Liu, Chenyang; Zhang, Zhe; Yu, Bin; Dong, Hailiang; Jia, Wei; Jia, Zhigang; Yu, Chunyan; Gan, Lin; Xu, Bingshe

2018-04-01

In this study, GaN epitaxial layers were successfully deposited on a multilayer graphene (MLG) by using metal-organic chemical vapor deposition (MOCVD). Highly crystalline orientations of the GaN films were confirmed through electron backscatter diffraction (EBSD). An epitaxial relationship between GaN films and MLG is unambiguously established by transmission electron microscope (TEM) analysis. The Raman spectra was used to analyze the internal stress of GaN films, and the spectrum shows residual tensile stress in the GaN films. Moreover, the results of the TEM analysis and Raman spectra indicate that the high quality of the MLG substrate is maintained even after the growth of the GaN film. This high-quality MLG makes it possible to easily remove epitaxial layers from the supporting substrate by micro-mechanical exfoliation technology. This work can aid in the development of transferable devices using GaN films.

Effect of isochronal annealing on photoluminescence properties of Mn-implanted GaN

International Nuclear Information System (INIS)

Majid, Abdul; Ali, Akbar

2009-01-01

Mn ions were implanted into metal organic chemical vapour deposition (MOCVD)-grown GaN with dose ranging from 10 14 to 5x10 16 cm -2 . Isochronal annealing at 800 and 850 deg. C has been carried out after implantation of the samples. Photoluminescence measurements were carried out on the implanted samples before and after annealing. A peak found at 3.34 eV in the spectra of implanted samples after annealing at 850 deg. C is attributed to the stacking faults. Blue and green luminescence bands have been observed suppressed and an oxygen-related peak appeared at 3.44 eV in the PL spectra. The suppression of blue and green luminescence bands has been assigned to dissociation of V Ga O N complex. Near-band-edge (NBE) peak exhibited a blue shift after 800 deg. C anneal and then red shift to restore its original energy position when annealed at 850 deg. C

Effect of isochronal annealing on photoluminescence properties of Mn-implanted GaN

Energy Technology Data Exchange (ETDEWEB)

Majid, Abdul [Advance Materials Physics Laboratory, Physics Department, Quaid-i-Azam University, Islamabad (Pakistan)], E-mail: abdulmajid40@yahoo.com; Ali, Akbar [Advance Materials Physics Laboratory, Physics Department, Quaid-i-Azam University, Islamabad (Pakistan)], E-mail: akbar@qau.edu.pk

2009-01-15

Mn ions were implanted into metal organic chemical vapour deposition (MOCVD)-grown GaN with dose ranging from 10{sup 14} to 5x10{sup 16} cm{sup -2}. Isochronal annealing at 800 and 850 deg. C has been carried out after implantation of the samples. Photoluminescence measurements were carried out on the implanted samples before and after annealing. A peak found at 3.34 eV in the spectra of implanted samples after annealing at 850 deg. C is attributed to the stacking faults. Blue and green luminescence bands have been observed suppressed and an oxygen-related peak appeared at 3.44 eV in the PL spectra. The suppression of blue and green luminescence bands has been assigned to dissociation of V{sub Ga}O{sub N} complex. Near-band-edge (NBE) peak exhibited a blue shift after 800 deg. C anneal and then red shift to restore its original energy position when annealed at 850 deg. C.

Dual-band and high-efficiency polarization converter based on metasurfaces at microwave frequencies

Science.gov (United States)

Liu, Yajun; Xia, Song; Shi, Hongyu; Zhang, Anxue; Xu, Zhuo

2016-06-01

We present a dual-band and high-efficiency polarization converter in microwave regime. The proposed converter can convert a linearly polarized wave to its cross-polarized wave for two distinct bands: Ku (11.5-20.0 GHz) and Ka (28.8-34.0 GHz). It can also convert the linearly polarized wave to a circularly polarized wave at four other frequencies. The experimental results are in good agreement with simulation results for both frequency bands. The polarization conversion ratio is above 0.94 for the Ku-band and 0.90 for the Ka-band. Furthermore, the converter can achieve dual-band and high-efficiency polarization conversion over angles of incidence up to 45°. The converter is also polarization-selective in that only the x- and y-polarized waves can be converted. The physical mechanism of the dual-band polarization conversion effect is interpreted via decomposed electric field components that couple with different plasmon resonance modes of the structure.

A comprehensive study on gain stabilization of Er-doped fiber amplifier in C-band with uniform fiber Bragg grating-pair

Science.gov (United States)

Yang, Jiuru; Ma, Yu; OuYang, Yunlun; Liu, Chunyu; Zhang, Jiaxiao

2014-07-01

Fiber grating-pair is one of the efficient methods for gain stabilization of erbium doped fiber amplifier (EDFA) but with a gain-reduction of signals, especially in C-band. In order to overcome it, in this article, we establish a configuration of EDFA based uniform fiber grating-pair and conduct a comprehensive study on gain stabilization by varying the reflectivity, center wavelength and 3dB bandwidth of grating, and by varying the channel number and pump power. The numerical results show that under the optimal parameters of grating the gain stabilization at 1550nm is +/-0.044dB with high gain and large dynamic range.

Metalorganic chemical vapor deposition growth of high-mobility AlGaN/AlN/GaN heterostructures on GaN templates and native GaN substrates

Energy Technology Data Exchange (ETDEWEB)

Chen, Jr-Tai, E-mail: jrche@ifm.liu.se; Hsu, Chih-Wei; Forsberg, Urban; Janzén, Erik [Department of Physics, Chemistry, and Biology (IFM), Linköping University, SE 581 83 Linköping (Sweden)

2015-02-28

Severe surface decomposition of semi-insulating (SI) GaN templates occurred in high-temperature H{sub 2} atmosphere prior to epitaxial growth in a metalorganic chemical vapor deposition system. A two-step heating process with a surface stabilization technique was developed to preserve the GaN template surface. Utilizing the optimized heating process, a high two-dimensional electron gas mobility ∼2000 cm{sup 2}/V·s was obtained in a thin AlGaN/AlN/GaN heterostructure with an only 100-nm-thick GaN spacer layer homoepitaxially grown on the GaN template. This technique was also demonstrated viable for native GaN substrates to stabilize the surface facilitating two-dimensional growth of GaN layers. Very high residual silicon and oxygen concentrations were found up to ∼1 × 10{sup 20 }cm{sup −3} at the interface between the GaN epilayer and the native GaN substrate. Capacitance-voltage measurements confirmed that the residual carbon doping controlled by growth conditions of the GaN epilayer can be used to successfully compensate the donor-like impurities. State-of-the-art structural properties of a high-mobility AlGaN/AlN/GaN heterostructure was then realized on a 1 × 1 cm{sup 2} SI native GaN substrate; the full width at half maximum of the X-ray rocking curves of the GaN (002) and (102) peaks are only 21 and 14 arc sec, respectively. The surface morphology of the heterostructure shows uniform parallel bilayer steps, and no morphological defects were noticeable over the entire epi-wafer.

Enhancement of TE polarized light extraction efficiency in nanoscale (AlN)m /(GaN)n (m>n) superlattice substitution for Al-rich AlGaN disorder alloy: ultra-thin GaN layer modulation

International Nuclear Information System (INIS)

Jiang, Xin-he; Shi, Jun-jie; Zhong, Hong-xia; Huang, Pu; Ding, Yi-min; Yu, Tong-jun; Shen, Bo; Lu, Jing; Zhang, Min; Wang, Xihua

2014-01-01

The problem of achieving high light extraction efficiency in Al-rich Al x Ga 1−x N is of paramount importance for the realization of AlGaN-based deep ultraviolet (DUV) optoelectronic devices. To solve this problem, we investigate the microscopic mechanism of valence band inversion and light polarization, a crucial factor for enhancing light extraction efficiency, in Al-rich Al x Ga 1−x N alloy using the Heyd–Scuseria–Ernzerhof hybrid functional, local-density approximation with 1/2 occupation, and the Perdew–Burke–Ernzerhof functional, in which the spin–orbit coupling effect is included. We find that the microscopic Ga-atom distribution can effectively modulate the valence band structure of Al-rich Al x Ga 1−x N. Moreover, we prove that the valence band arrangement in the decreasing order of heavy hole, light hole, and crystal-field split-off hole can be realized by using nanoscale (AlN) m /(GaN) n (m>n) superlattice (SL) substituting for Al-rich Al x Ga 1−x N disorder alloy as the active layer of optoelectronic devices due to the ultra-thin GaN layer modulation. The valence band maximum, i.e., the heavy hole band, has p x - and p y -like characteristics and is highly localized in the SL structure, which leads to the desired transverse electric (TE) polarized (E⊥c) light emission with improved light extraction efficiency in the DUV spectral region. Some important band-structure parameters and electron/hole effective masses are also given. The physical origin for the valence band inversion and TE polarization in (AlN) m /(GaN) n SL is analyzed in depth. (paper)

Zn-dopant dependent defect evolution in GaN nanowires

Science.gov (United States)

Yang, Bing; Liu, Baodan; Wang, Yujia; Zhuang, Hao; Liu, Qingyun; Yuan, Fang; Jiang, Xin

2015-10-01

Zn doped GaN nanowires with different doping levels (0, doping on the defect evolution, including stacking fault, dislocation, twin boundary and phase boundary, has been systematically investigated by transmission electron microscopy and first-principles calculations. Undoped GaN nanowires show a hexagonal wurtzite (WZ) structure with good crystallinity. Several kinds of twin boundaries, including (101&cmb.macr;3), (101&cmb.macr;1) and (202&cmb.macr;1), as well as Type I stacking faults (...ABABC&cmb.b.line;BCB...), are observed in the nanowires. The increasing Zn doping level (GaN nanowires. At high Zn doping level (3-5 at%), meta-stable cubic zinc blende (ZB) domains are generated in the WZ GaN nanowires. The WZ/ZB phase boundary (...ABABAC&cmb.b.line;BA...) can be identified as Type II stacking faults. The density of stacking faults (both Type I and Type II) increases with increasing the Zn doping levels, which in turn leads to a rough-surface morphology in the GaN nanowires. First-principles calculations reveal that Zn doping will reduce the formation energy of both Type I and Type II stacking faults, favoring their nucleation in GaN nanowires. An understanding of the effect of Zn doping on the defect evolution provides an important method to control the microstructure and the electrical properties of p-type GaN nanowires.Zn doped GaN nanowires with different doping levels (0, doping on the defect evolution, including stacking fault, dislocation, twin boundary and phase boundary, has been systematically investigated by transmission electron microscopy and first-principles calculations. Undoped GaN nanowires show a hexagonal wurtzite (WZ) structure with good crystallinity. Several kinds of twin boundaries, including (101&cmb.macr;3), (101&cmb.macr;1) and (202&cmb.macr;1), as well as Type I stacking faults (...ABABC&cmb.b.line;BCB...), are observed in the nanowires. The increasing Zn doping level (GaN nanowires. At high Zn doping level (3-5 at%), meta

Investigation on thermodynamics of ion-slicing of GaN and heterogeneously integrating high-quality GaN films on CMOS compatible Si(100) substrates.