WorldWideScience

Sample records for junction overcomes super-bandgap

  1. A generic concept to overcome bandgap limitations for designing highly efficient multi-junction photovoltaic cells.

    Science.gov (United States)

    Guo, Fei; Li, Ning; Fecher, Frank W; Gasparini, Nicola; Ramirez Quiroz, Cesar Omar; Bronnbauer, Carina; Hou, Yi; Radmilović, Vuk V; Radmilović, Velimir R; Spiecker, Erdmann; Forberich, Karen; Brabec, Christoph J

    2015-07-16

    The multi-junction concept is the most relevant approach to overcome the Shockley-Queisser limit for single-junction photovoltaic cells. The record efficiencies of several types of solar technologies are held by series-connected tandem configurations. However, the stringent current-matching criterion presents primarily a material challenge and permanently requires developing and processing novel semiconductors with desired bandgaps and thicknesses. Here we report a generic concept to alleviate this limitation. By integrating series- and parallel-interconnections into a triple-junction configuration, we find significantly relaxed material selection and current-matching constraints. To illustrate the versatile applicability of the proposed triple-junction concept, organic and organic-inorganic hybrid triple-junction solar cells are constructed by printing methods. High fill factors up to 68% without resistive losses are achieved for both organic and hybrid triple-junction devices. Series/parallel triple-junction cells with organic, as well as perovskite-based subcells may become a key technology to further advance the efficiency roadmap of the existing photovoltaic technologies.

  2. Wide bandgap, strain-balanced quantum well tunnel junctions on InP substrates

    International Nuclear Information System (INIS)

    Lumb, M. P.; Yakes, M. K.; Schmieder, K. J.; Affouda, C. A.; Walters, R. J.; González, M.; Bennett, M. F.; Herrera, M.; Delgado, F. J.; Molina, S. I.

    2016-01-01

    In this work, the electrical performance of strain-balanced quantum well tunnel junctions with varying designs is presented. Strain-balanced quantum well tunnel junctions comprising compressively strained InAlAs wells and tensile-strained InAlAs barriers were grown on InP substrates using solid-source molecular beam epitaxy. The use of InAlAs enables InP-based tunnel junction devices to be produced using wide bandgap layers, enabling high electrical performance with low absorption. The impact of well and barrier thickness on the electrical performance was investigated, in addition to the impact of Si and Be doping concentration. Finally, the impact of an InGaAs quantum well at the junction interface is presented, enabling a peak tunnel current density of 47.6 A/cm 2 to be realized.

  3. Wide bandgap, strain-balanced quantum well tunnel junctions on InP substrates

    Energy Technology Data Exchange (ETDEWEB)

    Lumb, M. P. [The George Washington University, Washington, DC 20037 (United States); US Naval Research Laboratory, Washington, DC 20375 (United States); Yakes, M. K.; Schmieder, K. J.; Affouda, C. A.; Walters, R. J. [US Naval Research Laboratory, Washington, DC 20375 (United States); González, M.; Bennett, M. F. [Sotera Defense Solutions, Annapolis Junction, Maryland 20701 (United States); US Naval Research Laboratory, Washington, DC 20375 (United States); Herrera, M.; Delgado, F. J.; Molina, S. I. [University of Cádiz, 11510, Puerto Real, Cádiz (Spain)

    2016-05-21

    In this work, the electrical performance of strain-balanced quantum well tunnel junctions with varying designs is presented. Strain-balanced quantum well tunnel junctions comprising compressively strained InAlAs wells and tensile-strained InAlAs barriers were grown on InP substrates using solid-source molecular beam epitaxy. The use of InAlAs enables InP-based tunnel junction devices to be produced using wide bandgap layers, enabling high electrical performance with low absorption. The impact of well and barrier thickness on the electrical performance was investigated, in addition to the impact of Si and Be doping concentration. Finally, the impact of an InGaAs quantum well at the junction interface is presented, enabling a peak tunnel current density of 47.6 A/cm{sup 2} to be realized.

  4. Free-carrier-compensated charged domain walls produced with super-bandgap illumination in insulating ferroelectrics

    Czech Academy of Sciences Publication Activity Database

    Bednyakov, Petr; Sluka, T.; Tagantsev, A.; Damjanovic, D.; Setter, N.

    2016-01-01

    Roč. 28, č. 43 (2016), s. 9498-9503 ISSN 0935-9648 R&D Projects: GA ČR GA15-04121S Institutional support: RVO:68378271 Keywords : super-bandgap illumination * charged domain walls * ferroelectric BaTiO 3 * free-carrier generation Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 19.791, year: 2016

  5. Similarities between normal- and super-currents in topological insulator magnetic tunnel junctions

    International Nuclear Information System (INIS)

    Soodchomshom, Bumned; Chantngarm, Peerasak

    2010-01-01

    This work compares the normal-current in a NM/Fi/NM junction with the super-current in a SC/Fi/SC junction, where both are topological insulator systems. NM and Fi are normal region and ferromagnetic region of thickness d with exchange energy m playing a role of the mass of the Dirac electrons and with the gate voltage V G , respectively. SC is superconducting region induced by a s-wave superconductor. We show that, interestingly, the critical super-current passing through a SC/Fi/SC junction behaves quite similar to the normal-current passing through a NM/Fi/NM junction. The normal-current and super-current exhibit N-peak oscillation, found when currents are plotted as a function of the magnetic barrier strength χ ∼ md/hv F . With the barrier strength Z ∼ V G d/hv F , the number of peaks N is determined through the relation Z ∼ Nπ + σπ (with 0 < σ≤1 for χ < Z). The normal- and the super-currents also exhibit oscillating with the same height for all of peaks, corresponding to the Dirac fermion tunneling behavior. These anomalous oscillating currents due to the interplay between gate voltage and magnetic field in the barrier were not found in graphene-based NM/Fi/NM and SC/Fi/SC junctions. This is due to the different magnetic effect between the Dirac fermions in topological insulator and graphene.

  6. Radiation resistant low bandgap InGaAsP solar cell for multi-junction solar cells

    International Nuclear Information System (INIS)

    Khan, Aurangzeb; Yamaguchi, Masafumi; Dharmaras, Nathaji; Yamada, Takashi; Tanabe, Tatsuya; Takagishi, Shigenori; Itoh, Hisayoshi; Ohshima, Takeshi

    2001-01-01

    We have explored the superior radiation tolerance of metal organic chemical vapor deposition (MOCVD) grown, low bandgap, (0.95eV) InGaAsP solar cells as compared to GaAs-on-Ge cells, after 1 MeV electron irradiation. The minority carrier injection due to forward bias and light illumination under low concentration ratio, can lead to enhanced recovery of radiation damage in InGaAsP n + -p junction solar cells. An injection anneal activation energy (0.58eV) of the defects involved in damage/recovery of the InGaAsP solar cells has been estimated from the resultant recovery of the solar cell properties following minority carrier injection. The results suggest that low bandgap radiation resistant InGaAsP (0.95eV) lattice matched to InP substrates provide an alternative to use as bottom cells in multi-junction solar cells instead of less radiation ressitant conventional GaAs based solar cells for space applications. (author)

  7. Concept and design of super junction devices

    Science.gov (United States)

    Zhang, Bo; Zhang, Wentong; Qiao, Ming; Zhan, Zhenya; Li, Zhaoji

    2018-02-01

    The super junction (SJ) has been recognized as the " milestone” of the power MOSFET, which is the most important innovation concept of the voltage-sustaining layer (VSL). The basic structure of the SJ is a typical junction-type VSL (J-VSL) with the periodic N and P regions. However, the conventional VSL is a typical resistance-type VSL (R-VSL) with only an N or P region. It is a qualitative change of the VSL from the R-VSL to the J-VSL, introducing the bulk depletion to increase the doping concentration and optimize the bulk electric field of the SJ. This paper firstly summarizes the development of the SJ, and then the optimization theory of the SJ is discussed for both the vertical and the lateral devices, including the non-full depletion mode, the minimum specific on-resistance optimization method and the equivalent substrate model. The SJ concept breaks the conventional " silicon limit” relationship of R on∝V B 2.5, showing a quasi-linear relationship of R on∝V B 1.03.

  8. Investigating the electronic properties of multi-junction ZnS/CdS/CdTe graded bandgap solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Olusola, O.I., E-mail: olajideibk@yahoo.com [Electronic Materials and Sensors Group, Materials and Engineering Research Institute, Sheffield Hallam University, Sheffield S1 1WB (United Kingdom); Department of Physics, School of Science, The Federal University of Technology, Akure (FUTA), P.M.B. 704 (Nigeria); Madugu, M.L.; Dharmadasa, I.M. [Electronic Materials and Sensors Group, Materials and Engineering Research Institute, Sheffield Hallam University, Sheffield S1 1WB (United Kingdom)

    2017-04-15

    The fabrication of multi-junction graded bandgap solar cells have been successfully implemented by electroplating three binary compound semiconductors from II-VI family. The three semiconductor materials grown by electroplating techniques are ZnS, CdS and CdTe thin films. The electrical conductivity type and energy bandgap of each of the three semiconductors were determined using photoelectrochemical (PEC) cell measurement and UV–Vis spectrophotometry techniques respectively. The PEC cell results show that all the three semiconductor materials have n-type electrical conductivity. These two material characterisation techniques were considered in this paper in order to establish the relevant energy band diagram for device results, analysis and interpretation. Solar cells with the device structure glass/FTO/n-ZnS/n-CdS/n-CdTe/Au were then fabricated and characterised using current-voltage (I-V) and capacitance-voltage (C-V) techniques. From the I-V characteristics measurement, the fabricated device structures yielded an open circuit voltage (V{sub oc}) of 670 mV, short circuit current density (J{sub sc}) of 41.5 mA cm{sup −2} and fill-factor (FF) of 0.46 resulting in ∼12.8% efficiency when measured at room temperature under AM1.5 illumination conditions. The device structure showed an excellent rectification factor (RF) of 10{sup 4.3} and ideality factor (n) of 1.88. The results obtained from the C-V measurement also showed that the device structures have a moderate doping level of 5.2 × 10{sup 15} cm{sup −3}. - Highlights: • Electroplating of n-ZnS, n-CdS and n-CdTe binary compound semiconductors. • Fabrication of Schottky barrier solar cells from glass/FTO/n-ZnS/n-CdS/n-CdTe/Au. • Development of multi-junction graded bandgap solar cells using n-n-n structures.

  9. Single-graded CIGS with narrow bandgap for tandem solar cells.

    Science.gov (United States)

    Feurer, Thomas; Bissig, Benjamin; Weiss, Thomas P; Carron, Romain; Avancini, Enrico; Löckinger, Johannes; Buecheler, Stephan; Tiwari, Ayodhya N

    2018-01-01

    Multi-junction solar cells show the highest photovoltaic energy conversion efficiencies, but the current technologies based on wafers and epitaxial growth of multiple layers are very costly. Therefore, there is a high interest in realizing multi-junction tandem devices based on cost-effective thin film technologies. While the efficiency of such devices has been limited so far because of the rather low efficiency of semitransparent wide bandgap top cells, the recent rise of wide bandgap perovskite solar cells has inspired the development of new thin film tandem solar devices. In order to realize monolithic, and therefore current-matched thin film tandem solar cells, a bottom cell with narrow bandgap (~1 eV) and high efficiency is necessary. In this work, we present Cu(In,Ga)Se 2 with a bandgap of 1.00 eV and a maximum power conversion efficiency of 16.1%. This is achieved by implementing a gallium grading towards the back contact into a CuInSe 2 base material. We show that this modification significantly improves the open circuit voltage but does not reduce the spectral response range of these devices. Therefore, efficient cells with narrow bandgap absorbers are obtained, yielding the high current density necessary for thin film multi-junction solar cells.

  10. Competitive behavior of photons contributing to junction voltage jump in narrow band-gap semiconductor multi-quantum-well laser diodes at lasing threshold

    Energy Technology Data Exchange (ETDEWEB)

    Feng, Liefeng, E-mail: fengliefeng@tju.edu.cn, E-mail: lihongru@nankai.edu.cn; Yang, Xiufang; Wang, Cunda; Yao, Dongsheng [Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology, Faculty of Science, Tianjin University, Tianjin 300072 (China); Li, Yang [Business and Vocational College of Hainan, Haikou 570203 (China); Li, Ding; Hu, Xiaodong [Research Center for Wide Band Gap Semiconductors, State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871 (China); Li, Hongru, E-mail: fengliefeng@tju.edu.cn, E-mail: lihongru@nankai.edu.cn [State Key Laboratory for Medicinal Chemistry and Biology, College of Pharmacy, Nankai University, Tianjin 300071 (China)

    2015-04-15

    The junction behavior of different narrow band-gap multi-quantum-well (MQW) laser diodes (LDs) confirmed that the jump in the junction voltage in the threshold region is a general characteristic of narrow band-gap LDs. The relative change in the 1310 nm LD is the most obvious. To analyze this sudden voltage change, the threshold region is divided into three stages by I{sub th}{sup l} and I{sub th}{sup u}, as shown in Fig. 2; I{sub th}{sup l} is the conventional threshold, and as long as the current is higher than this threshold, lasing exists and the IdV/dI-I plot drops suddenly; I{sub th}{sup u} is the steady lasing point, at which the separation of the quasi-Fermi levels of electron and holes across the active region (V{sub j}) is suddenly pinned. Based on the evolutionary model of dissipative structure theory, the rate equations of the photons in a single-mode LD were deduced in detail at I{sub th}{sup l} and I{sub th}{sup u}. The results proved that the observed behavior of stimulated emission suddenly substituting for spontaneous emission, in a manner similar to biological evolution, must lead to a sudden increase in the injection carriers in the threshold region, which then causes the sudden increase in the junction voltage in this region.

  11. Competitive behavior of photons contributing to junction voltage jump in narrow band-gap semiconductor multi-quantum-well laser diodes at lasing threshold

    International Nuclear Information System (INIS)

    Feng, Liefeng; Yang, Xiufang; Wang, Cunda; Yao, Dongsheng; Li, Yang; Li, Ding; Hu, Xiaodong; Li, Hongru

    2015-01-01

    The junction behavior of different narrow band-gap multi-quantum-well (MQW) laser diodes (LDs) confirmed that the jump in the junction voltage in the threshold region is a general characteristic of narrow band-gap LDs. The relative change in the 1310 nm LD is the most obvious. To analyze this sudden voltage change, the threshold region is divided into three stages by I th l and I th u , as shown in Fig. 2; I th l is the conventional threshold, and as long as the current is higher than this threshold, lasing exists and the IdV/dI-I plot drops suddenly; I th u is the steady lasing point, at which the separation of the quasi-Fermi levels of electron and holes across the active region (V j ) is suddenly pinned. Based on the evolutionary model of dissipative structure theory, the rate equations of the photons in a single-mode LD were deduced in detail at I th l and I th u . The results proved that the observed behavior of stimulated emission suddenly substituting for spontaneous emission, in a manner similar to biological evolution, must lead to a sudden increase in the injection carriers in the threshold region, which then causes the sudden increase in the junction voltage in this region

  12. A novel multiple super junction power device structure with low specific on-resistance

    International Nuclear Information System (INIS)

    Zhu Hui; Li Haiou; Li Qi; Huang Yuanhao; Xu Xiaoning; Zhao Hailiang

    2014-01-01

    A novel multiple super junction (MSJ) LDMOS power device is proposed to decrease R on due to lateral and vertical interactions between the N-pillar and P-pillar. In the studied device: multiple layers of SJ are introduced oppositely under surface SJ; when compared with 2D-depleting of the conventional super junction (CSJ), a 3D-depleted effect is formed in the MSJ thanks to vertical electric field modulation; and, current distribution is improved by deep drain, which increases the drift doping concentration and results in a lower on-resistance. The high electric field around the drain region by substrate-assisted depleted effect is reduced due to the charge balance result from the electric field shielding effect of the bottom SJ, which causes the uniform electric field in the drift region and the high breakdown voltage. The numerical simulation results indicate that the specific on-resistance of the MSJ device is reduced by 42% compared with that of CSJ device, while maintaining a high breakdown voltage; the cell pitch of the device is 12 μm. (semiconductor devices)

  13. Quantum Junction Solar Cells

    KAUST Repository

    Tang, Jiang

    2012-09-12

    Colloidal quantum dot solids combine convenient solution-processing with quantum size effect tuning, offering avenues to high-efficiency multijunction cells based on a single materials synthesis and processing platform. The highest-performing colloidal quantum dot rectifying devices reported to date have relied on a junction between a quantum-tuned absorber and a bulk material (e.g., TiO 2); however, quantum tuning of the absorber then requires complete redesign of the bulk acceptor, compromising the benefits of facile quantum tuning. Here we report rectifying junctions constructed entirely using inherently band-aligned quantum-tuned materials. Realizing these quantum junction diodes relied upon the creation of an n-type quantum dot solid having a clean bandgap. We combine stable, chemically compatible, high-performance n-type and p-type materials to create the first quantum junction solar cells. We present a family of photovoltaic devices having widely tuned bandgaps of 0.6-1.6 eV that excel where conventional quantum-to-bulk devices fail to perform. Devices having optimal single-junction bandgaps exhibit certified AM1.5 solar power conversion efficiencies of 5.4%. Control over doping in quantum solids, and the successful integration of these materials to form stable quantum junctions, offers a powerful new degree of freedom to colloidal quantum dot optoelectronics. © 2012 American Chemical Society.

  14. An oxide filled extended trench gate super junction MOSFET structure

    International Nuclear Information System (INIS)

    Cai-Lin, Wang; Jun, Sun

    2009-01-01

    This paper proposes an oxide filled extended trench gate super junction (SJ) MOSFET structure to meet the need of higher frequency power switches application. Compared with the conventional trench gate SJ MOSFET, new structure has the smaller input and output capacitances, and the remarkable improvements in the breakdown voltage, on-resistance and switching speed. Furthermore, the SJ in the new structure can be realized by the existing trench etching and shallow angle implantation, which offers more freedom to SJ MOSFET device design and fabrication. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  15. Influence of interface preparation on minority carrier lifetime for low bandgap tandem solar cell materials

    Energy Technology Data Exchange (ETDEWEB)

    Szabo, Nadine; Sagol, B. Erol; Seidel, Ulf; Schwarzburg, Klaus; Hannappel, Thomas [Helmholtz-Zentrum Berlin fuer Materialien und Energie GmbH, Berlin (Germany)

    2010-07-01

    III-V semiconductor compounds grown by MOVPE are implemented in todays state-of-the-art third generation multi-junction solar cells. The current record multi junction solar cell grown on germanium, having Ge, Ga(In)As and GaInP as subcells, reached a record efficiency of 41.6%. The efficiency of these multi junction solar cells could be significantly increased, if its low bandgap Ge subcell would be replaced by a more efficient tandem. For this purpose the low bandgap materials InGaAs and InGaAsP are suitable. The bandgap composition of these materials allows a better yield of the solar spectrum. Based on InGaAs/InGaAsP absorber materials we have developed a low bandgap tandem solar cell with optimized bandgaps. Results of time resolved photoluminescence (TRPL) for the IR-bandgap compounds InGaAsP (1.03 eV)/InGaAs (0.73 eV) are presented. The lifetime of minority carriers is one of the most important properties of solar cell absorber materials. We show on the example of the low band gap tandem cell how the choice of the materials, the quality of the bulk, the optimization of the band gap energies and the preparation of the critical interfaces are essential to build a high efficiency solar cell. The quality of the bulk and the preparation of the critical interfaces are essential for the growth of the double heterostructure (DHS).

  16. Overcoming the Photovoltage Plateau in Large Bandgap Perovskite Photovoltaics.

    Science.gov (United States)

    Rajagopal, Adharsh; Stoddard, Ryan J; Jo, Sae Byeok; Hillhouse, Hugh W; Jen, Alex K-Y

    2018-05-09

    Development of large bandgap (1.80-1.85 eV E g ) perovskite is crucial for perovskite-perovskite tandem solar cells. However, the performance of 1.80-1.85 eV E g perovskite solar cells (PVKSCs) are significantly lagging their counterparts in the 1.60-1.75 eV E g range. This is because the photovoltage ( V oc ) does not proportionally increase with E g due to lower optoelectronic quality of conventional (MA,FA,Cs)Pb(I,Br) 3 and results in a photovoltage plateau ( V oc limited to 80% of the theoretical limit for ∼1.8 eV E g ). Here, we incorporate phenylethylammonium (PEA) in a mixed-halide perovskite composition to solve the inherent material-level challenges in 1.80-1.85 eV E g perovskites. The amount of PEA incorporation governs the topography and optoelectronic properties of resultant films. Detailed structural and spectroscopic characterization reveal the characteristic trends in crystalline size, orientation, and charge carrier recombination dynamics and rationalize the origin of improved material quality with higher luminescence. With careful interface optimization, the improved material characteristics were translated to devices and V oc values of 1.30-1.35 V were achieved, which correspond to 85-87% of the theoretical limit. Using an optimal amount of PEA incorporation to balance the increase in V oc and the decrease in charge collection, a highest power conversion efficiency of 12.2% was realized. Our results clearly overcome the photovoltage plateau in the 1.80-1.85 eV E g range and represent the highest V oc achieved for mixed-halide PVKSCs. This study provides widely translatable insights, an important breakthrough, and a promising platform for next-generation perovskite tandems.

  17. Coulomb engineering of the bandgap and excitons in two-dimensional materials

    Science.gov (United States)

    Raja, Archana; Chaves, Andrey; Yu, Jaeeun; Arefe, Ghidewon; Hill, Heather M.; Rigosi, Albert F.; Berkelbach, Timothy C.; Nagler, Philipp; Schüller, Christian; Korn, Tobias; Nuckolls, Colin; Hone, James; Brus, Louis E.; Heinz, Tony F.; Reichman, David R.; Chernikov, Alexey

    2017-01-01

    The ability to control the size of the electronic bandgap is an integral part of solid-state technology. Atomically thin two-dimensional crystals offer a new approach for tuning the energies of the electronic states based on the unusual strength of the Coulomb interaction in these materials and its environmental sensitivity. Here, we show that by engineering the surrounding dielectric environment, one can tune the electronic bandgap and the exciton binding energy in monolayers of WS2 and WSe2 by hundreds of meV. We exploit this behaviour to present an in-plane dielectric heterostructure with a spatially dependent bandgap, as an initial step towards the creation of diverse lateral junctions with nanoscale resolution. PMID:28469178

  18. Effects of indirect bandgap top cells in a monolithic cascade cell structure

    Science.gov (United States)

    Curtis, H. B.; Godlewski, M. P.

    1982-01-01

    The effect of having a slightly indirect top cell in a three junction cascade monolithic stack is calculated. The minority carrier continuity equations are utilized to calculate individual junction performance. Absorption coefficient curves for general III-V compounds are calculated for a variety of direct and indirect gap materials. The results indicate that for a small excursion into the indirect region, (about 0.1 eV), the loss of efficiency is acceptably small (less than 2.5 percent) and considerably less than attempting to make the top junction a smaller direct bandgap.

  19. On the feasibility of infrared phosphors in super-slow particle searches

    International Nuclear Information System (INIS)

    Hagstrom, R.; Rugari, A.D.

    1984-01-01

    This chapter proposes that super-slow projectiles will produce ionization signals in media with narrow bandgaps. A specific choice of narrow bandgap phosphors is recommended which would be economically suitable for use as detectors. Topics considered include the possibilities for practical detectors, a description of detectors based on narrow bandgap phosphors, the experimental determination of relevant properties of narrow bandgap phosphors, and the observation of ionizing particles using narrow bandgap phosphors. It is determined that the temperature dependence of the glow of the phosphors is strong enough that a reduction of operating temperature by about 60 C could be sufficient to produce the desired signal to background ratio

  20. Contact and Bandgap Engineering in Two Dimensional Crystal

    Science.gov (United States)

    Chu, Tao

    At the heart of semiconductor research, bandgap is one of the key parameters for materials and determine their applications in modern technologies. For traditional bulk semiconductors, the bandgap is determined by the chemical composition and specific arrangement of the crystal lattices, and usually invariant during the device operation. Nevertheless, it is highly desirable for many optoelectronic and electronic applications to have materials with continuously tunable bandgap available. In the past decade, 2D layered materials including graphene and transition metal dichalcogenides (TMDs) have sparked interest in the scientific community, owing to their unique material properties and tremendous potential in various applications. Among many newly discovered properties that are non-existent in bulk materials, the strong in-plane bonding and weak van der Waals inter-planar interaction in these 2D layered structures leads to a widely tunable bandgap by electric field. This provides an extra knob to engineer the fundamental material properties and open a new design space for novel device operation. This thesis focuses on this field controlled dynamic bandgap and can be divided into three parts: (1) bilayer graphene is the first known 2D crystal with a bandgap can be continuously tuned by electric field. However, the electrical transport bandgaps is much smaller than both theoretical predictions and extracted bandgaps from optical measurements. In the first part of the thesis, the limiting factors of preventing achieving a large transport bandgap in bilayer graphene are investigated and different strategies to achieve a large transport bandgap are discussed, including the vertically scaling of gate oxide and patterning channel into ribbon structure. With a record large transport bandgap of ~200meV, a dual-gated semiconducting bilayer graphene P/N junction with extremely scaled gap of 20nm in-between is fabricated. A tunable local maxima feature, associated with 1D v

  1. AlGaAs/InGaAlP tunnel junctions for multijunction solar cells

    Energy Technology Data Exchange (ETDEWEB)

    SHARPS,P.R.; LI,N.Y.; HILLS,J.S.; HOU,H.; CHANG,PING-CHIH; BACA,ALBERT G.

    2000-05-16

    Optimization of GaInP{sub 2}/GaAs dual and GaInP{sub 2}/GaAs/Ge triple junction cells, and development of future generation monolithic multi-junction cells will involve the development of suitable high bandgap tunnel junctions. There are three criteria that a tunnel junction must meet. First, the resistance of the junction must be kept low enough so that the series resistance of the overall device is not increased. For AMO, 1 sun operation, the tunnel junction resistance should be below 5 x 10{sup {minus}2} {Omega}-cm. Secondly, the peak current density for the tunnel junction must also be larger than the J{sub sc} of the cell so that the tunnel junction I-V curve does not have a deleterious effect on the I-V curve of the multi-junction device. Finally, the tunnel junction must be optically transparent, i.e., there must be a minimum of optical absorption of photons that will be collected by the underlying subcells. The paper reports the investigation of four high bandgap tunnel junctions grown by metal-organic chemical vapor deposition.

  2. Triple junction polymer solar cells for photoelectrochemical water splitting

    NARCIS (Netherlands)

    Esiner, S.; Eersel, van H.; Wienk, M.M.; Janssen, R.A.J.

    2013-01-01

    A triple junction polymer solar cell in a novel 1 + 2 type configuration provides photoelectrochemical water splitting in its maximum power point at V ˜ 1.70 V with an estimated solar to hydrogen energy conversion efficiency of 3.1%. The triple junction cell consists of a wide bandgap front cell and

  3. A novel TFS-IGBT with a super junction floating layer

    International Nuclear Information System (INIS)

    Ye Jun; Fu Daping; Luo Bo; Zhao Yuanyuan; Qiao Ming; Zhang Bo

    2010-01-01

    A novel trench field stop (TFS) IGBT with a super junction (SJ) floating layer (SJ TFS-IGBT) is proposed. This IGBT presents a high blocking voltage (> 1200 V), low on-state voltage drop and fast turn-off capability. A SJ floating layer with a high doping concentration introduces a new electric field peak at the anode side and optimizes carrier distribution, which will improve the breakdown voltage in the off-state and decrease the energy loss in the on-state/switching state for the SJ TFS-IGBT. A low on-state voltage (V F ) and a high breakdown voltage (BV) can be achieved by increasing the thickness of the SJ floating layer under the condition of exact charge balance. A low turn-off loss can be achieved by decreasing the concentration of the P-anode. Simulation results show that the BV is enhanced by 100 V, V F is decreased by 0.33 V(at 100 A/cm 2 ) and the turn-off time is shortened by 60%, compared with conventional TFS-IGBTs.

  4. High-Temperature Electronics: A Role for Wide Bandgap Semiconductors?

    Science.gov (United States)

    Neudeck, Philip G.; Okojie, Robert S.; Chen, Liang-Yu

    2002-01-01

    It is increasingly recognized that semiconductor based electronics that can function at ambient temperatures higher than 150 C without external cooling could greatly benefit a variety of important applications, especially-in the automotive, aerospace, and energy production industries. The fact that wide bandgap semiconductors are capable of electronic functionality at much higher temperatures than silicon has partially fueled their development, particularly in the case of SiC. It appears unlikely that wide bandgap semiconductor devices will find much use in low-power transistor applications until the ambient temperature exceeds approximately 300 C, as commercially available silicon and silicon-on-insulator technologies are already satisfying requirements for digital and analog very large scale integrated circuits in this temperature range. However, practical operation of silicon power devices at ambient temperatures above 200 C appears problematic, as self-heating at higher power levels results in high internal junction temperatures and leakages. Thus, most electronic subsystems that simultaneously require high-temperature and high-power operation will necessarily be realized using wide bandgap devices, once the technology for realizing these devices become sufficiently developed that they become widely available. Technological challenges impeding the realization of beneficial wide bandgap high ambient temperature electronics, including material growth, contacts, and packaging, are briefly discussed.

  5. Planar Circularly Symmetric Electromagnetic Band-Gap Antennas for Low Cost High Performance Integrated Antennas

    NARCIS (Netherlands)

    Neto, A.; LLombart, N.; Gerini, G.; Maagt, P.J. de

    2009-01-01

    The use of Planar Circularly Symmetric (PCS) Electromagnetic Band-Gap (EBG) structures for optimizing the performances of single antenna elements and arrays is been discussed. The key advantage of using this sort of super structures is that they are planar and thus very cheap to manufacture with

  6. Planar circularly symmetric Electromagnetic Band-Gap antennas for low cost high performance integrated antennas

    NARCIS (Netherlands)

    Neto, A.; Llombart, N.; Gerini, G.; de Maagt, P.J.I.

    2009-01-01

    The use of planar circularly symmetric (PCS) electromagnetic band-gap (EBG) structures for optimizing the performances of single antenna elements and arrays is been discussed. The key advantage of using this sort of super structures is that they are planar and thus very cheap to manufacture with

  7. Controlling spin-dependent tunneling by bandgap tuning in epitaxial rocksalt MgZnO films.

    Science.gov (United States)

    Li, D L; Ma, Q L; Wang, S G; Ward, R C C; Hesjedal, T; Zhang, X-G; Kohn, A; Amsellem, E; Yang, G; Liu, J L; Jiang, J; Wei, H X; Han, X F

    2014-12-02

    Widespread application of magnetic tunnel junctions (MTJs) for information storage has so far been limited by the complicated interplay between tunnel magnetoresistance (TMR) ratio and the product of resistance and junction area (RA). An intricate connection exists between TMR ratio, RA value and the bandgap and crystal structure of the barrier, a connection that must be unravelled to optimise device performance and enable further applications to be developed. Here, we demonstrate a novel method to tailor the bandgap of an ultrathin, epitaxial Zn-doped MgO tunnel barrier with rocksalt structure. This structure is attractive due to its good Δ1 spin filtering effect, and we show that MTJs based on tunable MgZnO barriers allow effective balancing of TMR ratio and RA value. In this way spin-dependent transport properties can be controlled, a key challenge for the development of spintronic devices.

  8. Overcoming Registration Uncertainty in Image Super-Resolution: Maximize or Marginalize?

    Directory of Open Access Journals (Sweden)

    Andrew Zisserman

    2007-01-01

    Full Text Available In multiple-image super-resolution, a high-resolution image is estimated from a number of lower-resolution images. This usually involves computing the parameters of a generative imaging model (such as geometric and photometric registration, and blur and obtaining a MAP estimate by minimizing a cost function including an appropriate prior. Two alternative approaches are examined. First, both registrations and the super-resolution image are found simultaneously using a joint MAP optimization. Second, we perform Bayesian integration over the unknown image registration parameters, deriving a cost function whose only variables of interest are the pixel values of the super-resolution image. We also introduce a scheme to learn the parameters of the image prior as part of the super-resolution algorithm. We show examples on a number of real sequences including multiple stills, digital video, and DVDs of movies.

  9. Development of Radiation-hard Bandgap Reference and Temperature Sensor in CMOS 130 nm Technology

    CERN Document Server

    Kuczynska, Marika; Bugiel, Szymon; Firlej, Miroslaw; Fiutowski, Tomasz; Idzik, Marek; Michelis, Stefano; Moron, Jakub; Przyborowski, Dominik; Swientek, Krzysztof

    2015-01-01

    A stable reference voltage (or current) source is a standard component of today's microelectronics systems. In particle physics experiments such reference is needed in spite of harsh ionizing radiation conditions, i.e. doses exceeding 100 Mrads and fluences above 1e15 n/cm2. After such radiation load a bandgap reference using standard p-n junction of bipolar transistor does not work properly. Instead of using standard p-n junctions, two enclosed layout transistor (ELTMOS) structures are used to create radiation-hard diodes: the ELT bulk diode and the diode obtained using the ELTMOS as dynamic threshold transistor (DTMOS). In this paper we have described several sub-1V references based on ELTMOS bulk diode and DTMOS based diode, using CMOS 130 nm process. Voltage references the structures with additional PTAT (Proportional To Absolute Temperature) output for temperature measurements were also designed. We present and compare post-layout simulations of the developed bandgap references and temperature sensors, w...

  10. Study of the degradation of the breakdown voltage of a super-junction power MOSFET due to charge imbalance

    International Nuclear Information System (INIS)

    Kondekar, Pravin N.; Oh, Hwan-Sool; Kim, Young-Beom

    2006-01-01

    In this research, we analytically designed a super-junction (SJ) structure and used a simulation tool to study its off-state charge imbalance behavior. In the case of a SJ MOSFET (CoolMOS TM ), designed for the lowest specific on- resistance R on , the MOS part of the transistor (channel region) affected the symmetry, creating a charge imbalance; in addition to this, the imbalance in the SJ drift layer, which was inherently due to limitations in the fabrication process was simulated by varying the doping density of the pillars up to 10 %. The underlying physical mechanisms responsible for the reduction of the breakdown voltage (BV) were investigated in detail by using the electric field profiles and potential contours. The effect of varying the junction depth of a p-body/well and the cell pitch on the breakdown voltage was also analyzed. The trade off between BV sensitivity and specific R on was also investigated.

  11. Pressure-Induced Bandgap Optimization in Lead-Based Perovskites with Prolonged Carrier Lifetime and Ambient Retainability

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Gang [Center for High Pressure Science and Technology Advanced Research, Shanghai 201203 China; Geophysical Laboratory, Carnegie Institution of Washington, Washington DC 20015 USA; Kong, Lingping [Center for High Pressure Science and Technology Advanced Research, Shanghai 201203 China; Geophysical Laboratory, Carnegie Institution of Washington, Washington DC 20015 USA; Gong, Jue [Department of Chemistry and Biochemistry, Northern Illinois University, DeKalb IL 60115 USA; Yang, Wenge [Center for High Pressure Science and Technology Advanced Research, Shanghai 201203 China; Geophysical Laboratory, Carnegie Institution of Washington, Washington DC 20015 USA; Mao, Ho-kwang [Center for High Pressure Science and Technology Advanced Research, Shanghai 201203 China; Geophysical Laboratory, Carnegie Institution of Washington, Washington DC 20015 USA; Hu, Qingyang [Geophysical Laboratory, Carnegie Institution of Washington, Washington DC 20015 USA; Liu, Zhenxian [Geophysical Laboratory, Carnegie Institution of Washington, Washington DC 20015 USA; Schaller, Richard D. [Center for Nanoscale Materials, Argonne National Laboratory, Argonne IL 60439 USA; Zhang, Dongzhou [Hawai' i Institute of Geophysics and Planetology, School of Ocean and Earth Science and Technology, University of Hawai' i at Manoa, Honolulu HI 96822 USA; Xu, Tao [Department of Chemistry and Biochemistry, Northern Illinois University, DeKalb IL 60115 USA

    2016-12-05

    Bond length and bond angle exhibited by valence electrons is essential to the core of chemistry. Using lead-based organic–inorganic perovskite compounds as an exploratory platform, it is demonstrated that the modulation of valence electrons by compression can lead to discovery of new properties of known compounds. Yet, despite its unprecedented progress, further efficiency boost of lead-based organic–inorganic perovskite solar cells is hampered by their wider bandgap than the optimum value according to the Shockley–Queisser limit. By modulating the valence electron wavefunction with modest hydraulic pressure up to 2.1 GPa, the optimized bandgap for single-junction solar cells in lead-based perovskites, for the first time, is achieved by narrowing the bandgap of formamidinium lead triiodide (HC(NH2)2PbI3) from 1.489 to 1.337 eV. Strikingly, such bandgap narrowing is partially retained after the release of pressure to ambient, and the bandgap narrowing is also accompanied with double-prolonged carrier lifetime. With First-principles simulation, this work opens a new dimension in basic chemical understanding of structural photonics and electronics and paves an alternative pathway toward better photovoltaic materials-by-design.

  12. Pressure-Induced Bandgap Optimization in Lead-Based Perovskites with Prolonged Carrier Lifetime and Ambient Retainability

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Gang [Center for High Pressure Science and Technology Advanced Research, Shanghai 201203 China; Geophysical Laboratory, Carnegie Institution of Washington, Washington DC 20015 USA; Kong, Lingping [Center for High Pressure Science and Technology Advanced Research, Shanghai 201203 China; Geophysical Laboratory, Carnegie Institution of Washington, Washington DC 20015 USA; Gong, Jue [Department of Chemistry and Biochemistry, Northern Illinois University, DeKalb IL 60115 USA; Yang, Wenge [Center for High Pressure Science and Technology Advanced Research, Shanghai 201203 China; Geophysical Laboratory, Carnegie Institution of Washington, Washington DC 20015 USA; Mao, Ho-kwang [Center for High Pressure Science and Technology Advanced Research, Shanghai 201203 China; Geophysical Laboratory, Carnegie Institution of Washington, Washington DC 20015 USA; Hu, Qingyang [Geophysical Laboratory, Carnegie Institution of Washington, Washington DC 20015 USA; Liu, Zhenxian [Geophysical Laboratory, Carnegie Institution of Washington, Washington DC 20015 USA; Schaller, Richard D. [Center for Nanoscale Materials, Argonne National Laboratory, Argonne IL 60439 USA; Zhang, Dongzhou [Hawai' i Institute of Geophysics and Planetology, School of Ocean and Earth Science and Technology, University of Hawai' i at Manoa, Honolulu HI 96822 USA; Xu, Tao [Department of Chemistry and Biochemistry, Northern Illinois University, DeKalb IL 60115 USA

    2016-12-05

    Bond length and bond angle exhibited by valence electrons is essential to the core of chemistry. Using lead-based organic–inorganic perovskite compounds as an exploratory platform, it is demonstrated that the modulation of valence electrons by compression can lead to discovery of new properties of known compounds. Yet, despite its unprecedented progress, further efficiency boost of lead-based organic–inorganic perovskite solar cells is hampered by their wider bandgap than the optimum value according to the Shockley–Queisser limit. By modulating the valence electron wavefunction with modest hydraulic pressure up to 2.1 GPa, the optimized bandgap for single-junction solar cells in lead-based perovskites, for the first time, is achieved by narrowing the bandgap of formamidinium lead triiodide (HC(NH2)2PbI3) from 1.489 to 1.337 eV. Strikingly, such bandgap narrowing is partially retained after the release of pressure to ambient, and the bandgap narrowing is also accompanied with double-prolonged carrier lifetime. With First-principles simulation, this work opens a new dimension in basic chemical understanding of structural photonics and electronics and paves an alternative pathway toward better photovoltaic materials-by-design.

  13. A versatile optical junction using photonic band-gap guidance and self collimation

    Energy Technology Data Exchange (ETDEWEB)

    Gupta, Man Mohan; Medhekar, Sarang, E-mail: smedhekarbit@gmail.com [Centre for Applied Physics, Central University of Jharkhand, Ranchi 835205 (India)

    2014-09-29

    We show that it is possible to design two photonic crystal (PC) structures such that an optical beam of desired wavelength gets guided within the line defect of the first structure (photonic band gap guidance) and the same beam gets guided in the second structure by self-collimation. Using two dimensional simulation of a design made of the combination of these two structures, we propose an optical junction that allows for crossing of two optical signals of same wavelength and same polarization with very low crosstalk. Moreover, the junction can be operated at number of frequencies in a wide range. Crossing of multiple beams with very low cross talk is also possible. The proposed junction should be important in future integrated photonic circuits.

  14. Technology Enabling Ultra High Concentration Multi-Junction Cells. Final report

    Energy Technology Data Exchange (ETDEWEB)

    Bedair, S. M.; Colter, Peter

    2016-03-30

    The project goal is to enable multijunction cells to operate at greater than 2000× suns intensity with efficiency above forty percent. To achieve this goal the recipients have developed a robust high-bandgap tunnel junction, reduce series resistance, and integrated a practical heat dissipation scheme.

  15. Analysing 'super-participation' in online third spaces

    NARCIS (Netherlands)

    Graham, Todd; Wright, Scott; Cantijoch, Marta; Gibson, Rachel; Ward, Stephen

    2014-01-01

    This chapter focuses on our attempts to overcome the methodological challenges of 'super-participation' in online discussion forums, focusing on the participatory patterns and discursive activity of what we call 'super-participants'. Our principal contribution in this area (Graham and Wright 2013)

  16. Proliferation of sharp kinks on cosmic (super)string loops with junctions

    International Nuclear Information System (INIS)

    Binetruy, P.; Bohe, A.; Hertog, T.; Steer, D. A.

    2010-01-01

    Motivated by their effect on the gravitational wave signal emitted by cosmic strings, we study the dynamics of kinks on strings of different tensions meeting at junctions. The propagation of a kink through a Y junction leads to the formation of three 'daughter' kinks. Assuming a uniform distribution of the incoming wave vectors at the junction, we find there is a significant region of configuration space in which the sharpness of at least one of the daughter kinks is enhanced relative to the sharpness of the initial kink. For closed loops with junctions we show this leads to an exponential growth in time of very sharp kinks. Using numerical simulations of realistic, evolving cosmic string loops with junctions to calculate the distribution of kink amplitudes as a function of time, we show that loops of this kind typically develop several orders of magnitude of very sharp kinks before the two junctions collide. This collision, or other effects such as gravitational backreaction, may end the proliferation.

  17. Theoretical evaluation of maximum electric field approximation of direct band-to-band tunneling Kane model for low bandgap semiconductors

    Science.gov (United States)

    Dang Chien, Nguyen; Shih, Chun-Hsing; Hoa, Phu Chi; Minh, Nguyen Hong; Thi Thanh Hien, Duong; Nhung, Le Hong

    2016-06-01

    The two-band Kane model has been popularly used to calculate the band-to-band tunneling (BTBT) current in tunnel field-effect transistor (TFET) which is currently considered as a promising candidate for low power applications. This study theoretically clarifies the maximum electric field approximation (MEFA) of direct BTBT Kane model and evaluates its appropriateness for low bandgap semiconductors. By analysing the physical origin of each electric field term in the Kane model, it has been elucidated in the MEFA that the local electric field term must be remained while the nonlocal electric field terms are assigned by the maximum value of electric field at the tunnel junction. Mathematical investigations have showed that the MEFA is more appropriate for low bandgap semiconductors compared to high bandgap materials because of enhanced tunneling probability in low field regions. The appropriateness of the MEFA is very useful for practical uses in quickly estimating the direct BTBT current in low bandgap TFET devices.

  18. Single-nanowire, low-bandgap hot carrier solar cells with tunable open-circuit voltage

    Science.gov (United States)

    Limpert, Steven; Burke, Adam; Chen, I.-Ju; Anttu, Nicklas; Lehmann, Sebastian; Fahlvik, Sofia; Bremner, Stephen; Conibeer, Gavin; Thelander, Claes; Pistol, Mats-Erik; Linke, Heiner

    2017-10-01

    Compared to traditional pn-junction photovoltaics, hot carrier solar cells offer potentially higher efficiency by extracting work from the kinetic energy of photogenerated ‘hot carriers’ before they cool to the lattice temperature. Hot carrier solar cells have been demonstrated in high-bandgap ferroelectric insulators and GaAs/AlGaAs heterostructures, but so far not in low-bandgap materials, where the potential efficiency gain is highest. Recently, a high open-circuit voltage was demonstrated in an illuminated wurtzite InAs nanowire with a low bandgap of 0.39 eV, and was interpreted in terms of a photothermoelectric effect. Here, we point out that this device is a hot carrier solar cell and discuss its performance in those terms. In the demonstrated devices, InP heterostructures are used as energy filters in order to thermoelectrically harvest the energy of hot electrons photogenerated in InAs absorber segments. The obtained photovoltage depends on the heterostructure design of the energy filter and is therefore tunable. By using a high-resistance, thermionic barrier, an open-circuit voltage is obtained that is in excess of the Shockley-Queisser limit. These results provide generalizable insight into how to realize high voltage hot carrier solar cells in low-bandgap materials, and therefore are a step towards the demonstration of higher efficiency hot carrier solar cells.

  19. Monolithic, multi-bandgap, tandem, ultra-thin, strain-counterbalanced, photovoltaic energy converters with optimal subcell bandgaps

    Science.gov (United States)

    Wanlass, Mark W [Golden, CO; Mascarenhas, Angelo [Lakewood, CO

    2012-05-08

    Modeling a monolithic, multi-bandgap, tandem, solar photovoltaic converter or thermophotovoltaic converter by constraining the bandgap value for the bottom subcell to no less than a particular value produces an optimum combination of subcell bandgaps that provide theoretical energy conversion efficiencies nearly as good as unconstrained maximum theoretical conversion efficiency models, but which are more conducive to actual fabrication to achieve such conversion efficiencies than unconstrained model optimum bandgap combinations. Achieving such constrained or unconstrained optimum bandgap combinations includes growth of a graded layer transition from larger lattice constant on the parent substrate to a smaller lattice constant to accommodate higher bandgap upper subcells and at least one graded layer that transitions back to a larger lattice constant to accommodate lower bandgap lower subcells and to counter-strain the epistructure to mitigate epistructure bowing.

  20. The elastic buckling of super-graphene and super-square carbon nanotube networks

    International Nuclear Information System (INIS)

    Li Ying; Qiu Xinming; Yin Yajun; Yang Fan; Fan Qinshan

    2010-01-01

    The super-graphene (SG) and super-square (SS) carbon nanotube network are built by the straight single-walled carbon nanotubes and corresponding junctions. The elastic buckling behaviors of these carbon nanotube networks under different boundary conditions are explored through the molecular structural mechanics method. The following results are obtained: (a) The critical buckling forces of the SG and SS networks decrease as the side lengths or aspect ratios of the networks increase. The continuum plate theory could give good predictions to the buckling of the SS network but not the SG network with non-uniform buckling modes. (b) The carbon nanotube networks are more stable structures than the graphene structures with less carbon atoms.

  1. Efficient low bandgap polymer solar cell with ordered heterojunction defined by nanoimprint lithography.

    Science.gov (United States)

    Yang, Yi; Mielczarek, Kamil; Zakhidov, Anvar; Hu, Walter

    2014-11-12

    In this work, we demonstrate the feasibility of using nanoimprint lithography (NIL) to make efficient low bandgap polymer solar cells with well-ordered heterojunction. High quality low bandgap conjugated polymer poly[2,6-(4,4-bis(2-ethylhexyl)-4H-cyclopenta[2,1-b;3,4-b']-dithiophene)-alt-4,7-(2,1,3-benzothiadiazole)] (PCPDTBT) nanogratings are fabricated using this technique for the first time. The geometry effect of PCPDTBT nanostructures on the solar cell performance is investigated by making PCPDTBT/C70 solar cells with different feature sizes of PCPDTBT nanogratings. It is found that the power conversion efficiency (PCE) increases with increasing nanograting height, PCPDTBT/C70 junction area, and decreasing nanograting width. We also find that NIL makes PCPDTBT chains interact more strongly and form an improved structural ordering. Solar cells made on the highest aspect ratio PCPDTBT nanostructures are among the best reported devices using the same material with a PCE of 5.5%.

  2. Coupled-resonator-induced plasmonic bandgaps.

    Science.gov (United States)

    Wang, Yujia; Sun, Chengwei; Gong, Qihuang; Chen, Jianjun

    2017-10-15

    By drawing an analogy with the conventional photonic crystals, the plasmonic bandgaps have mainly employed the periodic metallic structures, named as plasmonic crystals. However, the sizes of the plasmonic crystals are much larger than the wavelengths, and the large sizes considerably decrease the density of the photonic integration circuits. Here, based on the coupled-resonator effect, the plasmonic bandgaps are experimentally realized in the subwavelength waveguide-resonator structure, which considerably decreases the structure size to subwavelength scales. An analytic model and the phase analysis are established to explain this phenomenon. Both the experiment and simulation show that the plasmonic bandgap structure has large fabrication tolerances (>20%). Instead of the periodic metallic structures in the bulky plasmonic crystals, the utilization of the subwavelength plasmonic waveguide-resonator structure not only significantly shrinks the bandgap structure to be about λ 2 /13, but also expands the physics of the plasmonic bandgaps. The subwavelength dimension, together with the waveguide configuration and robust realization, makes the bandgap structure easy to be highly integrated on chips.

  3. Conduction gap in graphene strain junctions: direction dependence

    International Nuclear Information System (INIS)

    Nguyen, M Chung; Nguyen, V Hung; Dollfus, P; Nguyen, Huy-Viet

    2014-01-01

    It has been shown in a recent study (Nguyen et al 2014 Nanotechnology 25 165201) that unstrained/strained graphene junctions are promising candidates to improve the performance of graphene transistors which is usually hindered by the gapless nature of graphene. Although the energy bandgap of strained graphene still remains zero, the shift of Dirac points in the k-space due to strain-induced deformation of graphene lattice can lead to the appearance of a finite conduction gap of several hundred meV in strained junctions with a strain of only a few per cent. However, since it depends essentially on the magnitude of the Dirac point shift, this conduction gap strongly depends on the direction of applied strain and the transport direction. In this work, a systematic study of conduction-gap properties with respect to these quantities is presented and the results are carefully analyzed. Our study provides useful information for further investigations to exploit graphene-strained junctions in electronic applications and strain sensors. (paper)

  4. Dilute Nitrides For 4-And 6- Junction Space Solar Cells

    Science.gov (United States)

    Essig, S.; Stammler, E.; Ronsch, S.; Oliva, E.; Schachtner, M.; Siefer, G.; Bett, A. W.; Dimroth, F.

    2011-10-01

    According to simulations the efficiency of conventional, lattice-matched GaInP/GaInAs/Ge triple-junction space solar cells can be strongly increased by the incorporation of additional junctions. In this way the existing excess current of the Germanium bottom cell can be reduced and the voltage of the stack can be increased. In particular, the use of 1.0 eV materials like GaInNAs opens the door for solar cells with significantly improved conversion efficiency. We have investigated the material properties of GaInNAs grown by metal organic vapour phase epitaxy (MOVPE) and its impact on the quantum efficiency of solar cells. Furthermore we have developed a GaInNAs subcell with a bandgap energy of 1.0 eV and integrated it into a GaInP/GaInAs/GaInNAs/Ge 4-junction and a AlGaInP/GaInP/AlGaInAs/GaInAs/GaInNAs/Ge 6- junction space solar cell. The material quality of the dilute nitride junction limits the current density of these devices to 9.3 mA/cm2 (AM0). This is not sufficient for a 4-junction cell but may lead to current matched 6- junction devices in the future.

  5. Giant electroresistance of super-tetragonal BiFeO3-based ferroelectric tunnel junctions.

    Science.gov (United States)

    Yamada, Hiroyuki; Garcia, Vincent; Fusil, Stéphane; Boyn, Sören; Marinova, Maya; Gloter, Alexandre; Xavier, Stéphane; Grollier, Julie; Jacquet, Eric; Carrétéro, Cécile; Deranlot, Cyrile; Bibes, Manuel; Barthélémy, Agnès

    2013-06-25

    Ferroelectric tunnel junctions enable a nondestructive readout of the ferroelectric state via a change of resistance induced by switching the ferroelectric polarization. We fabricated submicrometer solid-state ferroelectric tunnel junctions based on a recently discovered polymorph of BiFeO3 with giant axial ratio ("T-phase"). Applying voltage pulses to the junctions leads to the highest resistance changes (OFF/ON ratio >10,000) ever reported with ferroelectric tunnel junctions. Along with the good retention properties, this giant effect reinforces the interest in nonvolatile memories based on ferroelectric tunnel junctions. We also show that the changes in resistance scale with the nucleation and growth of ferroelectric domains in the ultrathin BiFeO3 (imaged by piezoresponse force microscopy), thereby suggesting potential as multilevel memory cells and memristors.

  6. An Efficient Solution-Processed Intermediate Layer for Facilitating Fabrication of Organic Multi-Junction Solar Cells

    DEFF Research Database (Denmark)

    Ning Li; Baran, Derya; Forberich, Karen

    2013-01-01

    ):poly(styrenesulfonate) (PEDOT:PSS) is demonstrated for series-connected multi-junction organic solar cells (OSCs). Drying at 80 °C in air is sufficient for this solution-processed IML to obtain excellent functionality and reliability, which allow the use of most of high performance donor materials in the tandem structure....... An open circuit voltage (Voc) of 0.56 V is obtained for single-junction OSCs based on a low band-gap polymer, while multi-junction OSCs based on the same absorber material deliver promising fill factor values along with fully additive Voc as the number of junctions increase. Optical and electrical...... simulations, which are reliable and promising guidelines for the design and investigation of multi-junction OSCs, are discussed. The outcome of optical and electrical simulations is in excellent agreement with the experimental data, indicating the outstanding efficiency and functionality of this solution...

  7. NbN tunnel junctions

    International Nuclear Information System (INIS)

    Villegier, J.C.; Vieux-Rochaz, L.; Goniche, M.; Renard, P.; Vabre, M.

    1984-09-01

    All-niobium nitride Josephon junctions have been prepared successfully using a new processing called SNOP: Selective Niobium (nitride) Overlap Process. Such a process involves the ''trilayer'' deposition on the whole wafer before selective patterning of the electrodes by optically controlled dry reactive ion etching. Only two photomask levels are need to define an ''overlap'' or a ''cross-type'' junction with a good accuracy. The properties of the niobium nitride films deposited by DC-magnetron sputtering and the surface oxide growth are analysed. The most critical point to obtain high quality and high gap value junctions resides in the early stage of the NbN counterelectrode growth. Some possibilities to overcome such a handicap exist even if the fabrication needs substrate temperatures below 250 0 C

  8. Wide bandgap collector III-V double heterojunction bipolar transistors

    International Nuclear Information System (INIS)

    Flitcroft, R.M.

    2000-10-01

    This thesis is devoted to the study and development of Heterojunction Bipolar Transistors (HBTs) designed for high voltage operation. The work concentrates on the use of wide bandgap III-V semiconductor materials as the collector material and their associated properties influencing breakdown, such as impact ionisation coefficients. The work deals with issues related to incorporating a wide bandgap collector into double heterojunction structures such as conduction band discontinuities at the base-collector junction and results are presented which detail, a number of methods designed to eliminate the effects of such discontinuities. In particular the use of AlGaAs as the base material has been successful in eliminating the conduction band spike at this interface. A method of electrically injecting electrons into the collector has been employed to investigate impact ionisation in GaAs, GaInP and AlInP which has used the intrinsic gain of the devices to extract impact ionisation coefficients over a range of electric fields beyond the scope of conventional optical injection techniques. This data has enabled the study of ''dead space'' effects in HBT collectors and have been used to develop an analytical model of impact ionisation which has been incorporated into an existing Ebers-Moll HBT simulator. This simulator has been shown to accurately reproduce current-voltage characteristics in both the devices used in this work and for external clients. (author)

  9. Tunable bandgaps in a deployable metamaterial

    Science.gov (United States)

    Nanda, Aditya; Karami, M. A.

    2018-06-01

    In this manuscript, we investigate deployable structures (such as solar arrays) and origami-inspired foldable structures as metamaterials capable of tunable wave manipulation. Specifically, we present a metamaterial whose bandgaps can be modulated by changing the fold angle of adjacent panels. The repeating unit cell of the structure consists of a beam (representing a panel) and a torsional spring (representing the folding mechanism). Two important cases are considered. Firstly, the fold angle (angle between adjacent beams), Ψ, is zero and only flexural waves propagate. In the second case, the fold angle is greater than zero (Ψ > 0). This causes longitudinal and transverse vibration to be coupled. FEM models are used to validate both these analyses. Increasing the fold angle was found to inflict notable changes to the wave transmission characteristics of the structure. In general, increasing the fold angles caused the bandwidth of bandgaps to increase. For the lowest four bandgaps we found bandwidth increases of 252 %, 177 %, 230 % and 163 % respectively at Ψ = 90 deg (relative to the bandwidths at Ψ = 0). In addition, non-trivial increases in bandwidth of the odd-numbered bandgaps occurs even at small fold angles-the bandwidth for the first and third bandgaps effectively double in size (increase by 100 %) at Ψ = 20 deg relative to those at Ψ = 0. This could have ramifications in the context of tunable wave manipulation and adaptive filtering. In addition, by expanding out the characteristic equation of transfer matrix for the straight structure, we prove that the upper band edge of the nth bandgap will always equal the nth simply supported natural frequency of the constituent beam. Further, we found that the ratio (EI/kt) is a pertinent parameter affecting the bandwidth of bandgaps. For low values of the ratio, effectively, no bandgap exists. For higher values of the ratio (EI/kt), we obtain a relatively large bandgap over which no waves propagate. This can

  10. Bandgap engineering of Cu2CdxZn1−xSnS4 alloy for photovoltaic applications: A complementary experimental and first-principles study

    KAUST Repository

    Xiao, Zhen-Yu

    2013-11-11

    We report on bandgap engineering of an emerging photovoltaic material of Cu2CdxZn1-xSnS4 (CCZTS) alloy. CCZTS alloy thin films with different Cd contents and single kesterite phase were fabricated using the sol-gel method. The optical absorption measurements indicate that the bandgap of the kesterite CCZTS alloy can be continuously tuned in a range of 1.55-1.09 eV as Cd content varied from x = 0 to 1. Hall effect measurements suggest that the hole concentration of CCZTS films decreases with increasing Cd content. The CCZTS-based solar cell with x = 0.47 demonstrates a power conversion efficiency of 1.2%. Our first-principles calculations based on the hybrid functional method demonstrate that the bandgap of the kesterite CCZTS alloy decreases monotonically with increasing Cd content, supporting the experimental results. Furthermore, Cu2ZnSnS4/Cu 2CdSnS4 interface has a type-I band-alignment with a small valence-band offset, explaining the narrowing of the bandgap of CCZTS as the Cd content increases. Our results suggest that CCZTS alloy is a potentially suitable material to fabricate high-efficiency multi-junction tandem solar cells with different bandgap-tailored absorption layers. © 2013 AIP Publishing LLC.

  11. Super-Resolution Microscopy Reveals the Native Ultrastructure of the Erythrocyte Cytoskeleton

    Directory of Open Access Journals (Sweden)

    Leiting Pan

    2018-01-01

    Full Text Available The erythrocyte cytoskeleton is a textbook prototype for the submembrane cytoskeleton of metazoan cells. While early experiments suggest a triangular network of actin-based junctional complexes connected by ∼200-nm-long spectrin tetramers, later studies indicate much smaller junction-to-junction distances in the range of 25-60 nm. Through super-resolution microscopy, we resolve the native ultrastructure of the cytoskeleton of membrane-preserved erythrocytes for the N and C termini of β-spectrin, F-actin, protein 4.1, tropomodulin, and adducin. This allows us to determine an ∼80-nm junction-to-junction distance, a length consistent with relaxed spectrin tetramers and theories based on spectrin abundance. Through two-color data, we further show that the cytoskeleton meshwork often contains nanoscale voids where the cell membrane remains intact and that actin filaments and capping proteins localize to a subset of, but not all, junctional complexes. Together, our results call for a reassessment of the structure and function of the submembrane cytoskeleton.

  12. Ballistic Josephson junctions based on CVD graphene

    Science.gov (United States)

    Li, Tianyi; Gallop, John; Hao, Ling; Romans, Edward

    2018-04-01

    Josephson junctions with graphene as the weak link between superconductors have been intensely studied in recent years, with respect to both fundamental physics and potential applications. However, most of the previous work was based on mechanically exfoliated graphene, which is not compatible with wafer-scale production. To overcome this limitation, we have used graphene grown by chemical vapour deposition (CVD) as the weak link of Josephson junctions. We demonstrate that very short, wide CVD-graphene-based Josephson junctions with Nb electrodes can work without any undesirable hysteresis in their electrical characteristics from 1.5 K down to a base temperature of 320 mK, and their gate-tuneable critical current shows an ideal Fraunhofer-like interference pattern in a perpendicular magnetic field. Furthermore, for our shortest junctions (50 nm in length), we find that the normal state resistance oscillates with the gate voltage, consistent with the junctions being in the ballistic regime, a feature not previously observed in CVD-graphene-based Josephson junctions.

  13. Coupled Acoustic-Mechanical Bandgaps

    DEFF Research Database (Denmark)

    Jensen, Jakob Søndergaard; Kook, Junghwan

    2016-01-01

    medium and the presence of acoustic resonances. It is demonstrated that corrugation of the plate structure can introduce bending wave bandgaps and bandgaps in the acoustic domain in overlapping and audible frequency ranges. This effect is preserved also when taking the physical coupling between the two...... domains into account. Additionally, the coupling is shown to introduce extra gaps in the band structure due to modal interaction and the appearance of a cut-on frequency for the fundamental acoustic mode....

  14. Application of super-resolution optical microscopy in biology

    International Nuclear Information System (INIS)

    Mao Xiuhai; Du Jiancong; Huang Qing; Fan Chunhai; Deng Suhui

    2013-01-01

    Background: A noninvasive, real-time far-field optical microscopy is needed to study the dynamic function inside cells and proteins. However, the resolution limit of traditional optical microscope is about 200 nm due to the diffraction limit of light. So, it's hard to directly observe the subcellular structures. Over the past several years of microscopy development, the diffraction limit of fluorescence microscopy has been overcome and its resolution limit is about tens of nanometers. Methods: To overcome the diffraction limit of light, many super-resolution fluoresce microscopes, including stimulated emission of depletion microscopy (STED), photoactivation localization microscopy (PALM) and stochastic optical reconstruction microscopy (STORM), have been developed. Conclusions: These methods have been applied in cell biology, microbiology and neurobiology, and the technology of super-resolution provides a new insight into the life science. (authors)

  15. Review of wide band-gap semiconductors technology

    Directory of Open Access Journals (Sweden)

    Jin Haiwei

    2016-01-01

    Full Text Available Silicon carbide (SiC and gallium nitride (GaN are typical representative of the wide band-gap semiconductor material, which is also known as third-generation semiconductor materials. Compared with the conventional semiconductor silicon (Si or gallium arsenide (GaAs, wide band-gap semiconductor has the wide band gap, high saturated drift velocity, high critical breakdown field and other advantages; it is a highly desirable semiconductor material applied under the case of high-power, high-temperature, high-frequency, anti-radiation environment. These advantages of wide band-gap devices make them a hot spot of semiconductor technology research in various countries. This article describes the research agenda of United States and European in this area, focusing on the recent developments of the wide band-gap technology in the US and Europe, summed up the facing challenge of the wide band-gap technology.

  16. Efficient Sub-Bandgap Light Absorption and Signal Amplification in Silicon Photodetectors

    Science.gov (United States)

    Liu, Yu-Hsin

    This thesis focuses on two areas in silicon photodetectors, the first being enhancing the sub-bandgap light absorption of IR wavelenghts in silicon, and the second being intrinsic signal amplification in silicon photodetectors. Both of these are achieved using heavily doped p-n junction devices which create localized states that relax the k-selection rule of indirect bandgap material. The probability of transitions between impurity band and the conduction/valence band would be much more efficient than the one between band-to-band transition. The waveguide-coupled epitaxial p-n photodetector was demonstrated for 1310 nm wavelength detection. Incorporated with the Franz-Keldysh effect and the quasi-confined epitaxial layer design, an absorption coefficient around 10 cm-1 has been measured and internal quantum efficiency nearly 100% at -2.5V. The absorption coefficient is calculated from the wave function of the electron and hole in p-n diode. The heavily doped impurity wave function can be formulated as a delta function, and the quasi-confined conduction band energy states, and the wave function on each level can be obtained from the Silvaco software. The calculated theoretical absorption coefficient increases with the increasing applied bias and the doping concentration, which matches the experimental results. To solve the issues of large excess noise and high operation bias for avalanche photodiodes based on impact ionization, I presented a detector using the Cycling Excitation Process (CEP) for signal amplification. This can be realized in a heavily doped and highly compensated Si p-n junction, showing ultra high gain about 3000 at very low bias (<4 V), and possessing an intrinsic, phonon-mediated regulation process to keep the device stable without any quenching device required in today's Geiger-mode avalanche detectors. The CEP can be formulated with the rate equations in conduction bands and impurity states. The gain expression, which is a function of the

  17. Photonic Bandgap (PBG) Shielding Technology

    Science.gov (United States)

    Bastin, Gary L.

    2007-01-01

    Photonic Bandgap (PBG) shielding technology is a new approach to designing electromagnetic shielding materials for mitigating Electromagnetic Interference (EM!) with small, light-weight shielding materials. It focuses on ground planes of printed wiring boards (PWBs), rather than on components. Modem PSG materials also are emerging based on planar materials, in place of earlier, bulkier, 3-dimensional PBG structures. Planar PBG designs especially show great promise in mitigating and suppressing EMI and crosstalk for aerospace designs, such as needed for NASA's Constellation Program, for returning humans to the moon and for use by our first human visitors traveling to and from Mars. Photonic Bandgap (PBG) materials are also known as artificial dielectrics, meta-materials, and photonic crystals. General PBG materials are fundamentally periodic slow-wave structures in I, 2, or 3 dimensions. By adjusting the choice of structure periodicities in terms of size and recurring structure spacings, multiple scatterings of surface waves can be created that act as a forbidden energy gap (i.e., a range of frequencies) over which nominally-conductive metallic conductors cease to be a conductor and become dielectrics. Equivalently, PBG materials can be regarded as giving rise to forbidden energy gaps in metals without chemical doping, analogous to electron bandgap properties that previously gave rise to the modem semiconductor industry 60 years ago. Electromagnetic waves cannot propagate over bandgap regions that are created with PBG materials, that is, over frequencies for which a bandgap is artificially created through introducing periodic defects

  18. Transparent contacts for stacked compound photovoltaic cells

    Science.gov (United States)

    Tauke-Pedretti, Anna; Cederberg, Jeffrey; Nielson, Gregory N.; Okandan, Murat; Cruz-Campa, Jose Luis

    2016-11-29

    A microsystems-enabled multi-junction photovoltaic (MEM-PV) cell includes a first photovoltaic cell having a first junction, the first photovoltaic cell including a first semiconductor material employed to form the first junction, the first semiconductor material having a first bandgap. The MEM-PV cell also includes a second photovoltaic cell comprising a second junction. The second photovoltaic cell comprises a second semiconductor material employed to form the second junction, the second semiconductor material having a second bandgap that is less than the first bandgap, the second photovoltaic cell further comprising a first contact layer disposed between the first junction of the first photovoltaic cell and the second junction of the second photovoltaic cell, the first contact layer composed of a third semiconductor material having a third bandgap, the third bandgap being greater than or equal to the first bandgap.

  19. Effect of Non-Stoichiometric Solution Chemistry on Improving the Performance of Wide-Bandgap Perovskite Solar Cells

    Energy Technology Data Exchange (ETDEWEB)

    Zhu, Kai [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Yang, Mengjin [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Kim, Donghoe [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Li, Zhen [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Reid, Obadiah G [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Yu, Yue [University of Toledo; Song, Zhaoning [University of Toledo; Zhao, Dewei [University of Toledo; Wang, Changlei [University of Toledo; Li, Liwei [ENN Energy Research Institute; ENN Solar Energy Co., Ltd.; Meng, Yuan [ENN Energy Research Institute; ENN Solar Energy Co., Ltd.; Guo, Ted [ENN Energy Research Institute; ENN Solar Energy Co., Ltd.; Yan, Yanfa [University of Toledo

    2017-10-18

    A high-efficiency wide-bandgap (WBG) perovskite solar cell is critical for developing perovskite-related (e.g., all-perovskite, perovskite/Si, or perovskite/Cu(In,Ga)Se2) tandem devices. Here, we demonstrate the use of non-stoichiometric precursor chemistry with excess methylammonium halides (MAX; X = I, Br, or Cl) for preparing high-quality ~1.75-eV FA0.83Cs0.17Pb(I0.6Br0.4)3 perovskite solar cells. Among various methylammonium halides, using excess MABr in the non-stoichiometric precursor exhibits the strongest effect on improving perovskite crystallographic properties and device characteristics without affecting the perovskite composition. In contrast, using excess MAI significantly reduces the bandgap of perovskite due to the replacement of Br with I. Using 40% excess MABr, we demonstrate a single-junction WBG perovskite solar cell with stabilized efficiency of 16.4%. We further demonstrate a 20.3%-efficient 4-terminal tandem device by using a 14.7%-efficient semi-transparent WBG perovskite top cell and an 18.6%-efficient unfiltered (5.6%-efficient filtered) Si bottom cell.

  20. pn junctions based on a single transparent perovskite semiconductor BaSnO3

    Science.gov (United States)

    Kim, Hoon Min; Kim, Useong; Park, Chulkwon; Kwon, Hyukwoo; Lee, Woongjae; Kim, Tai Hoon; Kim, Kee Hoon; Char, Kookrin; Mdpl, Department Of Physics; Astronomy Team; Censcmr, Department Of Physics; Astronomy Team

    2014-03-01

    Successful p doping of transparent oxide semiconductor will further increase its potential, especially in the area of optoelectronic applications. We will report our efforts to dope the BaSnO3 (BSO) with K by pulsed laser deposition. Although the K doped BSO exhibits rather high resistivity at room temperature, its conductivity increases dramatically at higher temperatures. Furthermore, the conductivity decreases when a small amount of oxygen was removed from the film, consistent with the behavior of p type doped oxides. We have fabricated pn junctions by using K doped BSO as a p type and La doped BSO as an n type material. I_V characteristics of these devices show the typical rectifying behavior of pn junctions. We will present the analysis of the junction properties from the temperature dependent measurement of their electrical properties, which shows that the I_V characteristics are consistent with the material parameters such as the carrier concentration, the mobility, and the bandgap. Our demonstration of pn junctions based on a single transparent perovskite semiconductor further enhances the potential of BSO system with high mobility and stability.

  1. Pathway to 50% Efficient Inverted Metamorphic Concentrator Solar Cells

    Energy Technology Data Exchange (ETDEWEB)

    Geisz, John F [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Steiner, Myles A [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Jain, Nikhil [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Schulte, Kevin L [National Renewable Energy Laboratory (NREL), Golden, CO (United States); France, Ryan M [National Renewable Energy Laboratory (NREL), Golden, CO (United States); McMahon, William E [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Perl, Emmett [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Horowitz, Kelsey A [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Friedman, Daniel J [National Renewable Energy Laboratory (NREL), Golden, CO (United States)

    2017-09-06

    Series-connected five (5J) and six junction (6J) concentrator solar cell strategies have the realistic potential to exceed 50% efficiency to enable low-cost CPV systems. We propose three strategies for developing a practical 6J device. We have overcome many of the challenges required to build such concentrator solar cell devices: We have developed 2.1 eV AlGaInP, 1.7 eV AlGaAs, and 1.7 eV GaInAsP junctions with external radiative efficiency greater than 0.1%. We have developed a transparent tunnel junction that absorbs minimal light intended for the second junction yet resists degradation under thermal load. We have developed metamorphic grades from the GaAs to the InP lattice constant that are transparent to sub-GaAs bandgap light. We have grown and compared low bandgap junctions (0.7eV - 1.2 eV) using metamorphic GaInAs, metamorphic GaInAsP, and GaInAsP lattice-matched to InP. And finally, we have demonstrated excellent performance in a high voltage, low current 4 junction inverted metamorphic device using 2.1, 1.7, 1.4, and 1.1 eV junctions with over 8.7 mA/cm2 one-sun current density that operates up to 1000 suns without tunnel junction failure.

  2. Direct Bandgap Group IV Materials

    Science.gov (United States)

    2016-01-21

    AFRL-AFOSR-JP-TR-2017-0049 Direct Bandgap group IV Materials Hung Hsiang Cheng NATIONAL TAIWAN UNIVERSITY Final Report 01/21/2016 DISTRIBUTION A...NAME(S) AND ADDRESS(ES) NATIONAL TAIWAN UNIVERSITY 1 ROOSEVELT RD. SEC. 4 TAIPEI CITY, 10617 TW 8. PERFORMING ORGANIZATION REPORT NUMBER 9. SPONSORING...14. ABSTRACT Direct bandgap group IV materials have been long sought for in both academia and industry for the implementation of photonic devices

  3. Direct assessment of p-n junctions in single GaN nanowires by Kelvin probe force microscopy

    Science.gov (United States)

    Minj, Albert; Cros, Ana; Auzelle, Thomas; Pernot, Julien; Daudin, Bruno

    2016-09-01

    Making use of Kelvin probe force microscopy, in dark and under ultraviolet illumination, we study the characteristics of p-n junctions formed along the axis of self-organized GaN nanowires (NWs). We map the contact potential difference of the single NW p-n junctions to locate the space charge region and directly measure the depletion width and the junction voltage. Simulations indicate a shrinkage of the built-in potential for NWs with small diameter due to surface band bending, in qualitative agreement with the measurements. The photovoltage of the NW/substrate contact is studied by analyzing the response of NW segments with p- and n-type doping under illumination. Our results show that the shifts of the Fermi levels, and not the changes in surface band bending, are the most important effects under above band-gap illumination. The quantitative electrical information obtained here is important for the use of NW p-n junctions as photovoltaic or rectifying devices at the nanoscale, and is especially relevant since the technique does not require the formation of ohmic contacts to the NW junction.

  4. Study on super-long deep-hole drilling of titanium alloy.

    Science.gov (United States)

    Liu, Zhanfeng; Liu, Yanshu; Han, Xiaolan; Zheng, Wencui

    2018-01-01

    In this study, the super-long deep-hole drilling of a titanium alloy was investigated. According to material properties of the titanium alloy, an experimental approach was designed to study three issues discovered during the drilling process: the hole-axis deflection, chip morphology, and tool wear. Based on the results of drilling experiments, crucial parameters for the super-long deep-hole drilling of titanium alloys were obtained, and the influences of these parameters on quality of the alloy's machining were also evaluated. Our results suggest that the developed drilling process is an effective method to overcome the challenge of super-long deep-hole drilling on difficult-to-cut materials.

  5. Sub-bandgap photonic base current method for characterization of interface states at heterointerfaces in heterojunction bipolar transistors

    International Nuclear Information System (INIS)

    Shin, H. T.; Kim, K. H.; Kim, K. S.

    2004-01-01

    In this paper, we propose a novel photonic base current analysis method to characterize the interface states in heterojunction bipolar transistors (HBTs) by using the photonic I-V characteristics under sub-bandgap photonic excitation. For the photonic current-voltage characterization of HBTs, an optical source with a photon energy less than the bandgap energy of Al 0.3 Ga 0.7 As and GaAs (E ph = 0.95 eV g,AlGaAs = 1.79 eV, E g,GaAs = 1.45 eV) is employed for the characterization of the interface states distributed in the photo-responsive energy band (E C - 0.95 ≤ E it ≤ E C ) in emitter-base heterojunction at HBTs. The proposed novel method, which is applied to bipolar junction transistors for the first time, is simple, and an accurate analysis of interface traps in HBTs is possible. By using the photonic base-current and the dark-base-current, we qualitatively analyze the interface trap at the Al 0.3 Ga 0.7 As/GaAs heterojunction interface in HBTs.

  6. Densely Aligned Graphene Nanoribbon Arrays and Bandgap Engineering

    Energy Technology Data Exchange (ETDEWEB)

    Su, Justin [Stanford Univ., CA (United States); Chen, Changxin [Stanford Univ., CA (United States); Gong, Ming [Stanford Univ., CA (United States); Kenney, Michael [Stanford Univ., CA (United States)

    2017-01-04

    Graphene has attracted great interest for future electronics due to its high mobility and high thermal conductivity. However, a two-dimensional graphene sheet behaves like a metal, lacking a bandgap needed for the key devices components such as field effect transistors (FETs) in digital electronics. It has been shown that, partly due to quantum confinement, graphene nanoribbons (GNRs) with ~2 nm width can open up sufficient bandgaps and evolve into semiconductors to exhibit high on/off ratios useful for FETs. However, a challenging problem has been that, such ultra-narrow GNRs (~2 nm) are difficult to fabricate, especially for GNRs with smooth edges throughout the ribbon length. Despite high on/off ratios, these GNRs show very low mobility and low on-state conductance due to dominant scattering effects by imperfections and disorders at the edges. Wider GNRs (>5 nm) show higher mobility, higher conductance but smaller bandgaps and low on/off ratios undesirable for FET applications. It is highly desirable to open up bandgaps in graphene or increase the bandgaps in wide GNRs to afford graphene based semiconductors for high performance (high on-state current and high on/off ratio) electronics. Large scale ordering and dense packing of such GNRs in parallel are also needed for device integration but have also been challenging thus far. It has been shown theoretically that uniaxial strains can be applied to a GNR to engineer its bandgap. The underlying physics is that under uniaxial strain, the Dirac point moves due to stretched C-C bonds, leading to an increase in the bandgap of armchair GNRs by up to 50% of its original bandgap (i.e. bandgap at zero strain). For zigzag GNRs, due to the existence of the edge states, changes of bandgap are smaller under uniaxial strain and can be increased by ~30%. This work proposes a novel approach to the fabrication of densely aligned graphene nanoribbons with highly smooth edges afforded by anisotropic etching and uniaxial strain for

  7. True photonic band-gap mode-control in VCSEL structures

    DEFF Research Database (Denmark)

    Romstad, F.; Madsen, M.; Birkedal, Dan

    2003-01-01

    Photonic band-gap mode confinement in novel nano-structured large area VCSEL structures is confirmed by the amplified spontaneous emission spectrum. Both guide and anti-guide VCSEL structures are experimentally characterised to verify the photonic band-gap effect.......Photonic band-gap mode confinement in novel nano-structured large area VCSEL structures is confirmed by the amplified spontaneous emission spectrum. Both guide and anti-guide VCSEL structures are experimentally characterised to verify the photonic band-gap effect....

  8. Solar energy converters based on multi-junction photoemission solar cells.

    Science.gov (United States)

    Tereshchenko, O E; Golyashov, V A; Rodionov, A A; Chistokhin, I B; Kislykh, N V; Mironov, A V; Aksenov, V V

    2017-11-23

    Multi-junction solar cells with multiple p-n junctions made of different semiconductor materials have multiple bandgaps that allow reducing the relaxation energy loss and substantially increase the power-conversion efficiency. The choice of materials for each sub-cell is very limited due to the difficulties in extracting the current between the layers caused by the requirements for lattice- and current-matching. We propose a new vacuum multi-junction solar cell with multiple p-n junctions separated by vacuum gaps that allow using different semiconductor materials as cathode and anode, both activated to the state of effective negative electron affinity (NEA). In this work, the compact proximity focused vacuum tube with the GaAs(Cs,O) photocathode and AlGaAs/GaAs-(Cs,O) anode with GaAs quantum wells (QWs) is used as a prototype of a vacuum single-junction solar cell. The photodiode with the p-AlGaAs/GaAs anode showed the spectral power-conversion efficiency of about 1% at V bias  = 0 in transmission and reflection modes, while, at V bias  = 0.5 V, the efficiency increased up to 10%. In terms of energy conservation, we found the condition at which the energy cathode-to-anode transition was close to 1. Considering only the energy conservation part, the NEA-cell power-conversion efficiency can rich a quantum yield value which is measured up to more than 50%.

  9. Wide Bandgap Extrinsic Photoconductive Switches

    Energy Technology Data Exchange (ETDEWEB)

    Sullivan, James S. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)

    2013-07-03

    Semi-insulating Gallium Nitride, 4H and 6H Silicon Carbide are attractive materials for compact, high voltage, extrinsic, photoconductive switches due to their wide bandgap, high dark resistance, high critical electric field strength and high electron saturation velocity. These wide bandgap semiconductors are made semi-insulating by the addition of vanadium (4H and 6HSiC) and iron (2H-GaN) impurities that form deep acceptors. These deep acceptors trap electrons donated from shallow donor impurities. The electrons can be optically excited from these deep acceptor levels into the conduction band to transition the wide bandgap semiconductor materials from a semi-insulating to a conducting state. Extrinsic photoconductive switches with opposing electrodes have been constructed using vanadium compensated 6H-SiC and iron compensated 2H-GaN. These extrinsic photoconductive switches were tested at high voltage and high power to determine if they could be successfully used as the closing switch in compact medical accelerators.

  10. Bandgap Optimization of Perovskite Semiconductors for Photovoltaic Applications.

    Science.gov (United States)

    Xiao, Zewen; Zhou, Yuanyuan; Hosono, Hideo; Kamiya, Toshio; Padture, Nitin P

    2018-02-16

    The bandgap is the most important physical property that determines the potential of semiconductors for photovoltaic (PV) applications. This Minireview discusses the parameters affecting the bandgap of perovskite semiconductors that are being widely studied for PV applications, and the recent progress in the optimization of the bandgaps of these materials. Perspectives are also provided for guiding future research in this area. © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  11. Wide bandgap engineering of (AlGa)2O3 films

    International Nuclear Information System (INIS)

    Zhang, Fabi; Saito, Katsuhiko; Tanaka, Tooru; Nishio, Mitsuhiro; Guo, Qixin; Arita, Makoto

    2014-01-01

    Bandgap tunable (AlGa) 2 O 3 films were deposited on sapphire substrates by pulsed laser deposition (PLD). The deposited films are of high transmittance as measured by spectrophotometer. The Al content in films is almost the same as that in targets. The measurement of bandgap energies by examining the onset of inelastic energy loss in core-level atomic spectra using X-ray photoelectron spectroscopy is proved to be valid for determining the bandgap of (AlGa) 2 O 3 films as it is in good agreement with the bandgap values from transmittance spectra. The measured bandgap of (AlGa) 2 O 3 films increases continuously with the Al content covering the whole Al content range from about 5 to 7 eV, indicating PLD is a promising growth technology for growing bandgap tunable (AlGa) 2 O 3 films.

  12. Overcoming the Cut-Off Charge Transfer Bandgaps at the PbS Quantum Dot Interface

    KAUST Repository

    El-Ballouli, Ala'a O.

    2015-11-17

    Light harvesting from large size of semiconductor PbS quantum dots (QDs) with a bandgap of less than 1 eV is one of the greatest challenges precluding the development of PbS QD-based solar cells because the interfacial charge transfer (CT) from such QDs to the most commonly used electron acceptor materials is very inefficient, if it occurs at all. Thus, an alternative electron-accepting unit with a new driving force for CT is urgently needed to harvest the light from large-sized PbS QDs. Here, a cationic porphyrin is utilized as a new electron acceptor unit with unique features that bring the donor–acceptor components into close molecular proximity, allowing ultrafast and efficient electron transfer for QDs of all sizes, as inferred from the drastic photoluminescence quenching and the ultrafast formation of the porphyrin anionic species. The time-resolved results clearly demonstrate the possibility of modulating the electron transfer process between PbS QDs and porphyrin moieties not only by the size quantization effect but also by the interfacial electrostatic interaction between the positively charged porphyrin and the negatively charged QDs. This approach provides a new pathway for engineering QD-based solar cells that make the best use of the diverse photons making up the Sun\\'s broad irradiance spectrum.

  13. Overcoming the Cut-Off Charge Transfer Bandgaps at the PbS Quantum Dot Interface

    KAUST Repository

    El-Ballouli, Ala'a O.; Alarousu, Erkki; Kirmani, Ahmad R.; Amassian, Aram; Bakr, Osman; Mohammed, Omar F.

    2015-01-01

    Light harvesting from large size of semiconductor PbS quantum dots (QDs) with a bandgap of less than 1 eV is one of the greatest challenges precluding the development of PbS QD-based solar cells because the interfacial charge transfer (CT) from such QDs to the most commonly used electron acceptor materials is very inefficient, if it occurs at all. Thus, an alternative electron-accepting unit with a new driving force for CT is urgently needed to harvest the light from large-sized PbS QDs. Here, a cationic porphyrin is utilized as a new electron acceptor unit with unique features that bring the donor–acceptor components into close molecular proximity, allowing ultrafast and efficient electron transfer for QDs of all sizes, as inferred from the drastic photoluminescence quenching and the ultrafast formation of the porphyrin anionic species. The time-resolved results clearly demonstrate the possibility of modulating the electron transfer process between PbS QDs and porphyrin moieties not only by the size quantization effect but also by the interfacial electrostatic interaction between the positively charged porphyrin and the negatively charged QDs. This approach provides a new pathway for engineering QD-based solar cells that make the best use of the diverse photons making up the Sun's broad irradiance spectrum.

  14. Face Recognition by Metropolitan Police Super-Recognisers.

    Science.gov (United States)

    Robertson, David J; Noyes, Eilidh; Dowsett, Andrew J; Jenkins, Rob; Burton, A Mike

    2016-01-01

    Face recognition is used to prove identity across a wide variety of settings. Despite this, research consistently shows that people are typically rather poor at matching faces to photos. Some professional groups, such as police and passport officers, have been shown to perform just as poorly as the general public on standard tests of face recognition. However, face recognition skills are subject to wide individual variation, with some people showing exceptional ability-a group that has come to be known as 'super-recognisers'. The Metropolitan Police Force (London) recruits 'super-recognisers' from within its ranks, for deployment on various identification tasks. Here we test four working super-recognisers from within this police force, and ask whether they are really able to perform at levels above control groups. We consistently find that the police 'super-recognisers' perform at well above normal levels on tests of unfamiliar and familiar face matching, with degraded as well as high quality images. Recruiting employees with high levels of skill in these areas, and allocating them to relevant tasks, is an efficient way to overcome some of the known difficulties associated with unfamiliar face recognition.

  15. High-efficiency, monolithic, multi-bandgap, tandem photovoltaic energy converters

    Science.gov (United States)

    Wanlass, Mark W [Golden, CO

    2011-11-29

    A monolithic, multi-bandgap, tandem solar photovoltaic converter has at least one, and preferably at least two, subcells grown lattice-matched on a substrate with a bandgap in medium to high energy portions of the solar spectrum and at least one subcell grown lattice-mismatched to the substrate with a bandgap in the low energy portion of the solar spectrum, for example, about 1 eV.

  16. Terahertz spectroscopy of three-dimensional photonic band-gap crystals

    International Nuclear Information System (INIS)

    Oezbay, E.; Michel, E.; Tuttle, G.; Biswas, R.; Ho, K.M.; Bostak, J.; Bloom, D.M.

    1994-01-01

    We have fabricated and built three-dimensional photonic band-gap crystals with band-gap frequencies larger than 500 GHz. We built the crystals by stacking micromachined (110) silicon wafers. The transmission and dispersion characteristics of the structures were measured by an all-electronic terahertz spectroscopy setup. The experimental results were in good agreement with theoretical calculations. To our knowledge, our new crystal has the highest reported photonic band-gap frequency

  17. Investigation of room-temperature wafer bonded GaInP/GaAs/InGaAsP triple-junction solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Wen-xian; Dai, Pan; Ji, Lian; Tan, Ming; Wu, Yuan-yuan [Key Lab of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences (CAS), Suzhou 215123 (China); Uchida, Shiro [Department of Mechanical Science and Engineering Faculty of Engineering, Chiba Institute of Technology, 2-17-1, Tsudanuma, Narashino, Chiba 275-0016 (Japan); Lu, Shu-long, E-mail: sllu2008@sinano.ac.cn [Key Lab of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences (CAS), Suzhou 215123 (China); Yang, Hui [Key Lab of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences (CAS), Suzhou 215123 (China)

    2016-12-15

    Highlights: • High quality InGaAsP material with a bandgap of 1.0 eV was grown by MBE. • Room-temperature wafer-bonded GaInP/GaAs/InGaAsP SCs were fabricated. • An efficiency of 30.3% of wafer-bonded triple-junction SCs was obtained. - Abstract: We report on the fabrication of III–V compound semiconductor multi-junction solar cells using the room-temperature wafer bonding technique. GaInP/GaAs dual-junction solar cells on GaAs substrate and InGaAsP single junction solar cell on InP substrate were separately grown by all-solid state molecular beam epitaxy (MBE). The two cells were then bonded to a triple-junction solar cell at room-temperature. A conversion efficiency of 30.3% of GaInP/GaAs/InGaAsP wafer-bonded solar cell was obtained at 1-sun condition under the AM1.5G solar simulator. The result suggests that the room-temperature wafer bonding technique and MBE technique have a great potential to improve the performance of multi-junction solar cell.

  18. Tensile-strain effect of inducing the indirect-to-direct band-gap transition and reducing the band-gap energy of Ge

    Energy Technology Data Exchange (ETDEWEB)

    Inaoka, Takeshi, E-mail: inaoka@phys.u-ryukyu.ac.jp; Furukawa, Takuro; Toma, Ryo; Yanagisawa, Susumu [Department of Physics and Earth Sciences, Faculty of Science, University of the Ryukyus, 1 Senbaru, Nishihara, Okinawa 903-0213 (Japan)

    2015-09-14

    By means of a hybrid density-functional method, we investigate the tensile-strain effect of inducing the indirect-to-direct band-gap transition and reducing the band-gap energy of Ge. We consider [001], [111], and [110] uniaxial tensility and (001), (111), and (110) biaxial tensility. Under the condition of no normal stress, we determine both normal compression and internal strain, namely, relative displacement of two atoms in the primitive unit cell, by minimizing the total energy. We identify those strain types which can induce the band-gap transition, and evaluate the critical strain coefficient where the gap transition occurs. Either normal compression or internal strain operates unfavorably to induce the gap transition, which raises the critical strain coefficient or even blocks the transition. We also examine how each type of tensile strain decreases the band-gap energy, depending on its orientation. Our analysis clearly shows that synergistic operation of strain orientation and band anisotropy has a great influence on the gap transition and the gap energy.

  19. Poster - Thur Eve - 57: Craniospinal irradiation with jagged-junction IMRT approach without beam edge matching for field junctions.

    Science.gov (United States)

    Cao, F; Ramaseshan, R; Corns, R; Harrop, S; Nuraney, N; Steiner, P; Aldridge, S; Liu, M; Carolan, H; Agranovich, A; Karva, A

    2012-07-01

    Craniospinal irradiation were traditionally treated the central nervous system using two or three adjacent field sets. A intensity-modulated radiotherapy (IMRT) plan (Jagged-Junction IMRT) which overcomes problems associated with field junctions and beam edge matching, improves planning and treatment setup efficiencies with homogenous target dose distribution was developed. Jagged-Junction IMRT was retrospectively planned on three patients with prescription of 36 Gy in 20 fractions and compared to conventional treatment plans. Planning target volume (PTV) included the whole brain and spinal canal to the S3 vertebral level. The plan employed three field sets, each with a unique isocentre. One field set with seven fields treated the cranium. Two field sets treated the spine, each set using three fields. Fields from adjacent sets were overlapped and the optimization process smoothly integrated the dose inside the overlapped junction. For the Jagged-Junction IMRT plans vs conventional technique, average homogeneity index equaled 0.08±0.01 vs 0.12±0.02, and conformity number equaled 0.79±0.01 vs 0.47±0.12. The 95% isodose surface covered (99.5±0.3)% of the PTV vs (98.1±2.0)%. Both Jagged-Junction IMRT plans and the conventional plans had good sparing of the organs at risk. Jagged-Junction IMRT planning provided good dose homogeneity and conformity to the target while maintaining a low dose to the organs at risk. Jagged-Junction IMRT optimization smoothly distributed dose in the junction between field sets. Since there was no beam matching, this treatment technique is less likely to produce hot or cold spots at the junction in contrast to conventional techniques. © 2012 American Association of Physicists in Medicine.

  20. Super differential forms on super Riemann surfaces

    International Nuclear Information System (INIS)

    Konisi, Gaku; Takahasi, Wataru; Saito, Takesi.

    1994-01-01

    Line integral on the super Riemann surface is discussed. A 'super differential operator' which possesses both properties of differential and of differential operator is proposed. With this 'super differential operator' a new theory of differential form on the super Riemann surface is constructed. We call 'the new differentials on the super Riemann surface' 'the super differentials'. As the applications of our theory, the existency theorems of singular 'super differentials' such as 'super abelian differentials of the 3rd kind' and of a super projective connection are examined. (author)

  1. Electrically tunable liquid crystal photonic bandgap fiber laser

    DEFF Research Database (Denmark)

    Olausson, Christina Bjarnal Thulin; Scolari, Lara; Wei, Lei

    2010-01-01

    We demonstrate electrical tunability of a fiber laser by using a liquid crystal photonic bandgap fiber. Tuning of the laser is achieved by combining the wavelength filtering effect of a liquid crystal photonic bandgap fiber device with an ytterbium-doped photonic crystal fiber. We fabricate an al...

  2. Relation between the electroforming voltage in alkali halide-polymer diodes and the bandgap of the alkali halide

    International Nuclear Information System (INIS)

    Bory, Benjamin F.; Wang, Jingxin; Janssen, René A. J.; Meskers, Stefan C. J.; Gomes, Henrique L.; De Leeuw, Dago M.

    2014-01-01

    Electroforming of indium-tin-oxide/alkali halide/poly(spirofluorene)/Ba/Al diodes has been investigated by bias dependent reflectivity measurements. The threshold voltages for electrocoloration and electroforming are independent of layer thickness and correlate with the bandgap of the alkali halide. We argue that the origin is voltage induced defect formation. Frenkel defect pairs are formed by electron–hole recombination in the alkali halide. This self-accelerating process mitigates injection barriers. The dynamic junction formation is compared to that of a light emitting electrochemical cell. A critical defect density for electroforming is 10 25 /m 3 . The electroformed alkali halide layer can be considered as a highly doped semiconductor with metallic transport characteristics

  3. Phosphorene nanoribbons: Passivation effect on bandgap and effective mass

    International Nuclear Information System (INIS)

    Xu, Li-Chun; Song, Xian-Jiang; Yang, Zhi; Cao, Ling; Liu, Rui-Ping; Li, Xiu-Yan

    2015-01-01

    Highlights: • Hydrogenation and fluorination can passivate the metallic edge states of zPNRs. • The bandgap of each type of zPNRs decreases as the ribbon's width increases duo to the quantum confinement effect. • Two local configurations of passivated atoms can coexist in nanoribbons and affect the bandgap of narrow nanoribbons. • New passivation configuration can effectively reduce the effective mass of electrons. - Abstract: The edge passivation effect of phosphorene nanoribbons is systematically investigated using density functional theory. Hydrogen and fluorine atoms passivate the metallic edge states of nanoribbons and can open a bandgap up to 2.25 eV. The two configurations of passivated atoms can exist at two edges and affect the bandgap of narrow nanoribbons. The bandgap of each type of zPNRs decreases as the ribbon's width increases, which can be attributed to the quantum confinement effect. The new configuration, named C b , can effectively reduce the effective mass of electrons, which benefits the future design of phosphorene-based electronic devices

  4. Phosphorene nanoribbons: Passivation effect on bandgap and effective mass

    Energy Technology Data Exchange (ETDEWEB)

    Xu, Li-Chun, E-mail: xulichun@tyut.edu.cn; Song, Xian-Jiang; Yang, Zhi; Cao, Ling; Liu, Rui-Ping; Li, Xiu-Yan

    2015-01-01

    Highlights: • Hydrogenation and fluorination can passivate the metallic edge states of zPNRs. • The bandgap of each type of zPNRs decreases as the ribbon's width increases duo to the quantum confinement effect. • Two local configurations of passivated atoms can coexist in nanoribbons and affect the bandgap of narrow nanoribbons. • New passivation configuration can effectively reduce the effective mass of electrons. - Abstract: The edge passivation effect of phosphorene nanoribbons is systematically investigated using density functional theory. Hydrogen and fluorine atoms passivate the metallic edge states of nanoribbons and can open a bandgap up to 2.25 eV. The two configurations of passivated atoms can exist at two edges and affect the bandgap of narrow nanoribbons. The bandgap of each type of zPNRs decreases as the ribbon's width increases, which can be attributed to the quantum confinement effect. The new configuration, named C{sub b}, can effectively reduce the effective mass of electrons, which benefits the future design of phosphorene-based electronic devices.

  5. Super-iron Nanoparticles with Facile Cathodic Charge Transfer

    Energy Technology Data Exchange (ETDEWEB)

    M Farmand; D Jiang; B Wang; S Ghosh; D Ramaker; S Licht

    2011-12-31

    Super-irons contain the + 6 valence state of iron. One advantage of this is that it provides a multiple electron opportunity to store additional battery charge. A decrease of particle size from the micrometer to the nanometer domain provides a higher surface area to volume ratio, and opportunity to facilitate charge transfer, and improve the power, voltage and depth of discharge of cathodes made from such salts. However, super-iron salts are fragile, readily reduced to the ferric state, with both heat and contact with water, and little is known of the resultant passivating and non-passivating ferric oxide products. A pathway to decrease the super-iron particle size to the nano-domain is introduced, which overcomes this fragility, and retains the battery capacity advantage of their Fe(VI) valence state. Time and power controlled mechanosynthesis, through less aggressive, dry ball milling, leads to facile charge transfer of super-iron nanoparticles. Ex-situ X-ray Absorption Spectroscopy is used to explore the oxidation state and structure of these iron oxides during discharge and shows the significant change in stability of the ferrate structure to lower oxidation state when the particle size is in the nano-domain.

  6. Medium area, flexible single and tandem junction solar cells based on roll coated semi-random copolymers

    DEFF Research Database (Denmark)

    Andersen, Thomas Rieks; Dam, Henrik Friis; Burkhart, Beate

    2014-01-01

    laboratory roll-coater using only slot-die coating and flexographic printing under ambient conditions on a flexible ITO-free substrate. In order to overcome a low JSC and FF obtained for single junction devices, devices were also prepared in a tandem geometry making it possible to employ thinner junction...... films. Power conversion efficiencies of up to 1.36% and 1.31% were achieved for the tandem and single junction geometries, respectively....

  7. Advances in photonic bandgap fiber functionality

    DEFF Research Database (Denmark)

    Lyngsøe, Jens Kristian

    In order to take advantage of the many intriguing optical properties of photonic bandgap fibers, there are some technological challenges that have to be addressed. Among other things this includes transmission loss and the fibers ability to maintain field polarization. The work presented in this ......In order to take advantage of the many intriguing optical properties of photonic bandgap fibers, there are some technological challenges that have to be addressed. Among other things this includes transmission loss and the fibers ability to maintain field polarization. The work presented...

  8. Wide Bandgap Extrinsic Photoconductive Switches

    Energy Technology Data Exchange (ETDEWEB)

    Sullivan, James S. [State Univ. of New York (SUNY), Plattsburgh, NY (United States); Univ. of California, Davis, CA (United States)

    2012-01-20

    Photoconductive semiconductor switches (PCSS) have been investigated since the late 1970s. Some devices have been developed that withstand tens of kilovolts and others that switch hundreds of amperes. However, no single device has been developed that can reliably withstand both high voltage and switch high current. Yet, photoconductive switches still hold the promise of reliable high voltage and high current operation with subnanosecond risetimes. Particularly since good quality, bulk, single crystal, wide bandgap semiconductor materials have recently become available. In this chapter we will review the basic operation of PCSS devices, status of PCSS devices and properties of the wide bandgap semiconductors 4H-SiC, 6H-SiC and 2H-GaN.

  9. Optimum design of band-gap beam structures

    DEFF Research Database (Denmark)

    Olhoff, Niels; Niu, Bin; Cheng, Gengdong

    2012-01-01

    The design of band-gap structures receives increasing attention for many applications in mitigation of undesirable vibration and noise emission levels. A band-gap structure usually consists of a periodic distribution of elastic materials or segments, where the propagation of waves is impeded...... or significantly suppressed for a range of external excitation frequencies. Maximization of the band-gap is therefore an obvious objective for optimum design. This problem is sometimes formulated by optimizing a parameterized design model which assumes multiple periodicity in the design. However, it is shown...... in the present paper that such an a priori assumption is not necessary since, in general, just the maximization of the gap between two consecutive natural frequencies leads to significant design periodicity. The aim of this paper is to maximize frequency gaps by shape optimization of transversely vibrating...

  10. Ge-on-insulator tunneling FET with abrupt source junction formed by utilizing snowplow effect of NiGe

    Science.gov (United States)

    Matsumura, Ryo; Katoh, Takumi; Takaguchi, Ryotaro; Takenaka, Mitsuru; Takagi, Shinichi

    2018-04-01

    Tunneling field-effect transistors (TFETs) attract much attention for use in realizing next-generation low-power processors. In particular, Ge-on-insulator (GOI) TFETs are expected to realize low power operation with a high on-current/off-current (I on/I off) ratio, owing to their narrow bandgap. Here, to improve the performance of GOI-TFETs, a source junction with a high doping concentration and an abrupt impurity profile is essential. In this study, a snowplow effect of NiGe combined with low-energy BF2 + implantation has been investigated to realize an abrupt p+/n Ge junction for GOI n-channel TFETs. By optimizing the Ni thickness to form NiGe (thickness: 4 nm), an abrupt junction with a B profile abruptness of ˜5 nm/dec has been realized with a high doping concentration of around 1021 cm-3. The operation of GOI n-TFETs with this source junction having the abrupt B profile has been demonstrated, and the improvement of TFET properties such as the I on/I off ratio from 311 to 743 and the subthreshold slope from 368 to 239 mV/dec has been observed. This junction formation technology is attractive for enhancing the TFET performance.

  11. Micromachined millimeter-wave photonic band-gap crystals

    International Nuclear Information System (INIS)

    Oezbay, E.; Michel, E.; Tuttle, G.; Biswas, R.; Sigalas, M.; Ho, K.

    1994-01-01

    We have developed a new technique for fabricating three-dimensional photonic band-gap crystals. Our method utilizes an orderly stacking of micromachined (110) silicon wafers to build the periodic structure. A structure with a full three-dimensional photonic band gap centered near 100 GHz was measured, with experimental results in good agreement with theoretical predictions. This basic approach described should be extendable to build structures with photonic band-gap frequencies ranging from 30 GHz to 3 THz

  12. Thermal tunability of photonic bandgaps in liquid crystal infiltrated microstructured polymer optical fibers

    DEFF Research Database (Denmark)

    Yuan, Scott Wu; Wei, Lei; Alkeskjold, Thomas Tanggaard

    2009-01-01

    We demonstrate the photonic bandgap effect and the thermal tunability of bandgaps in microstructured polymer optical fibers infiltrated with liquid crystal. Two liquid crystals with opposite sign of the temperature gradient of the ordinary refractive index (E7 and MDA-00- 1444) are used to demons......We demonstrate the photonic bandgap effect and the thermal tunability of bandgaps in microstructured polymer optical fibers infiltrated with liquid crystal. Two liquid crystals with opposite sign of the temperature gradient of the ordinary refractive index (E7 and MDA-00- 1444) are used...... to demonstrate that both signs of the thermal tunability of the bandgaps are possible. The useful bandgaps are ultimately bounded to the visible range by the transparency window of the polymer....

  13. Recent Advances in Wide-Bandgap Photovoltaic Polymers.

    Science.gov (United States)

    Cai, Yunhao; Huo, Lijun; Sun, Yanming

    2017-06-01

    The past decade has witnessed significant advances in the field of organic solar cells (OSCs). Ongoing improvements in the power conversion efficiency of OSCs have been achieved, which were mainly attributed to the design and synthesis of novel conjugated polymers with different architectures and functional moieties. Among various conjugated polymers, the development of wide-bandgap (WBG) polymers has received less attention than that of low-bandgap and medium-bandgap polymers. Here, we briefly summarize recent advances in WBG polymers and their applications in organic photovoltaic (PV) devices, such as tandem, ternary, and non-fullerene solar cells. Addtionally, we also dissuss the application of high open-circuit voltage tandem solar cells in PV-driven electrochemical water dissociation. We mainly focus on the molecular design strategies, the structure-property correlations, and the photovoltaic performance of these WBG polymers. Finally, we extract empirical regularities and provide invigorating perspectives on the future development of WBG photovoltaic materials. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  14. Aberrations and adaptive optics in super-resolution microscopy

    Science.gov (United States)

    Booth, Martin; Andrade, Débora; Burke, Daniel; Patton, Brian; Zurauskas, Mantas

    2015-01-01

    As one of the most powerful tools in the biological investigation of cellular structures and dynamic processes, fluorescence microscopy has undergone extraordinary developments in the past decades. The advent of super-resolution techniques has enabled fluorescence microscopy – or rather nanoscopy – to achieve nanoscale resolution in living specimens and unravelled the interior of cells with unprecedented detail. The methods employed in this expanding field of microscopy, however, are especially prone to the detrimental effects of optical aberrations. In this review, we discuss how super-resolution microscopy techniques based upon single-molecule switching, stimulated emission depletion and structured illumination each suffer from aberrations in different ways that are dependent upon intrinsic technical aspects. We discuss the use of adaptive optics as an effective means to overcome this problem. PMID:26124194

  15. Fullerene-based low-density superhard materials with tunable bandgaps

    Science.gov (United States)

    Cao, Ai-Hua; Zhao, Wen-Juan; Gan, Li-Hua

    2018-06-01

    Four carbon allotropes built from tetrahedral symmetrical fullerenes C28 and C40 are predicted to be superhard materials with mass density around that of water, and all of them are porous semiconductors. Both the bandgaps and hardness decrease with increasing ratio of sp2 hybridized carbon atoms. The mechanical and thermodynamic stabilities of C28- and C40-based allotropes at zero pressure are confirmed by a variety of state-of-the-art theoretical calculations. The evolution trend of bandgap found here suggests that one can obtain low-density hard materials with tunable bandgaps by substituting the carbon atom in diamond with different Td-symmetrical non-IPR fullerene Cn.

  16. Innovative architecture design for high performance organic and hybrid multi-junction solar cells

    Science.gov (United States)

    Li, Ning; Spyropoulos, George D.; Brabec, Christoph J.

    2017-08-01

    The multi-junction concept is especially attractive for the photovoltaic (PV) research community owing to its potential to overcome the Schockley-Queisser limit of single-junction solar cells. Tremendous research interests are now focused on the development of high-performance absorbers and novel device architectures for emerging PV technologies, such as organic and perovskite PVs. It has been predicted that the multi-junction concept is able to boost the organic and perovskite PV technologies approaching the 20% and 30% benchmarks, respectively, showing a bright future of commercialization of the emerging PV technologies. In this contribution, we will demonstrate innovative architecture design for solution-processed, highly functional organic and hybrid multi-junction solar cells. A simple but elegant approach to fabricating organic and hybrid multi-junction solar cells will be introduced. By laminating single organic/hybrid solar cells together through an intermediate layer, the manufacturing cost and complexity of large-scale multi-junction solar cells can be significantly reduced. This smart approach to balancing the photocurrents as well as open circuit voltages in multi-junction solar cells will be demonstrated and discussed in detail.

  17. Research on bandgaps in two-dimensional phononic crystal with two resonators.

    Science.gov (United States)

    Gao, Nansha; Wu, Jiu Hui; Yu, Lie

    2015-02-01

    In this paper, the bandgap properties of a two-dimensional phononic crystal with the two resonators is studied and embedded in a homogenous matrix. The resonators are not connected with the matrix but linked with connectors directly. The dispersion relationship, transmission spectra, and displacement fields of the eigenmodes of this phononic crystal are studied with finite-element method. In contrast to the phononic crystals with one resonators and hollow structure, the proposed structures with two resonators can open bandgaps at lower frequencies. This is a very interesting and useful phenomenon. Results show that, the opening of the bandgaps is because of the local resonance and the scattering interaction between two resonators and matrix. An equivalent spring-pendulum model can be developed in order to evaluate the frequencies of the bandgap edge. The study in this paper is beneficial to the design of opening and tuning bandgaps in phononic crystals and isolators in low-frequency range. Copyright © 2014 Elsevier B.V. All rights reserved.

  18. New Light-Harvesting Materials Using Accurate and Efficient Bandgap Calculations

    DEFF Research Database (Denmark)

    Castelli, Ivano Eligio; Hüser, Falco; Pandey, Mohnish

    2014-01-01

    Electronic bandgap calculations are presented for 2400 experimentally known materials from the Materials Project database and the bandgaps, obtained with different types of functionals within density functional theory and (partial) self-consistent GW approximation, are compared for 20 randomly...

  19. Outdoor measurements of a photovoltaic system using diffractive spectrum-splitting and concentration

    Directory of Open Access Journals (Sweden)

    N. Mohammad

    2016-09-01

    Full Text Available In a single-bandgap absorber, photons having energy less than the bandgap are not absorbed, while those having energy larger than the bandgap lose the excess energy via thermalization. We present outdoor measurements of a photovoltaic system that overcomes these losses via spectrum splitting and concentration using a planar diffractive optic. The system was comprised of the diffractive optic coupled with GaInP and CIGS solar cells. The optic provides a geometric concentration of 3X for each solar cell. It is easily fabricated by single-step grayscale lithography and it is ultra-thin with a maximum thickness of only 2.5μm. Electrical measurements under direct sunlight demonstrated an increase of ∼25% in total output power compared to the reference case without spectrum splitting and concentration. Since different bandgaps are in the same plane, the proposed photovoltaic system successfully circumvents the lattice-matching and current-matching issues in conventional tandem multi-junction solar cells. This system is also tolerant to solar spectrum variation and fill-factor degradation of constitutive solar cells.

  20. Analysis of phononic bandgap structures with dissipation

    DEFF Research Database (Denmark)

    Andreassen, Erik; Jensen, Jakob Søndergaard

    2013-01-01

    and longer wavelengths, we show that the two formulations produce nearly identical results in terms of propagation constant and wave decay. We use the k(ω)-formulation to compute loss factors with dissipative bandgap materials for steady-state wave propagation and create simplified diagrams that unify...... the spatial loss factor from dissipative and bandgap effects. Additionally, we demonstrate the applicability of the k(ω)-formulation for the computation of the band diagram for viscoelastic composites and compare the computed loss factors for low frequency wave propagation to existing results based on quasi...

  1. Strain-Modulated Bandgap and Piezo-Resistive Effect in Black Phosphorus Field-Effect Transistors.

    Science.gov (United States)

    Zhang, Zuocheng; Li, Likai; Horng, Jason; Wang, Nai Zhou; Yang, Fangyuan; Yu, Yijun; Zhang, Yu; Chen, Guorui; Watanabe, Kenji; Taniguchi, Takashi; Chen, Xian Hui; Wang, Feng; Zhang, Yuanbo

    2017-10-11

    Energy bandgap largely determines the optical and electronic properties of a semiconductor. Variable bandgap therefore makes versatile functionality possible in a single material. In layered material black phosphorus, the bandgap can be modulated by the number of layers; as a result, few-layer black phosphorus has discrete bandgap values that are relevant for optoelectronic applications in the spectral range from red, in monolayer, to mid-infrared in the bulk limit. Here, we further demonstrate continuous bandgap modulation by mechanical strain applied through flexible substrates. The strain-modulated bandgap significantly alters the density of thermally activated carriers; we for the first time observe a large piezo-resistive effect in black phosphorus field-effect transistors (FETs) at room temperature. The effect opens up opportunities for future development of electromechanical transducers based on black phosphorus, and we demonstrate an ultrasensitive strain gauge constructed from black phosphorus thin crystals.

  2. Efficient CsF interlayer for high and low bandgap polymer solar cell

    Science.gov (United States)

    Mitul, Abu Farzan; Sarker, Jith; Adhikari, Nirmal; Mohammad, Lal; Wang, Qi; Khatiwada, Devendra; Qiao, Qiquan

    2018-02-01

    Low bandgap polymer solar cells have a great deal of importance in flexible photovoltaic market to absorb sun light more efficiently. Efficient wide bandgap solar cells are always available in nature to absorb visible photons. The development and incorporation of infrared photovoltaics (IR PV) with wide bandgap solar cells can improve overall solar device performance. Here, we have developed an efficient low bandgap polymer solar cell with CsF as interfacial layer in regular structure. Polymer solar cell devices with CsF shows enhanced performance than Ca as interfacial layer. The power conversion efficiency of 4.5% has been obtained for PDPP3T based polymer solar cell with CsF as interlayer. Finally, an optimal thickness with CsF as interfacial layer has been found to improve the efficiency in low bandgap polymer solar cells.

  3. Rationally Controlled Synthesis of CdSexTe1-x Alloy Nanocrystals and Their Application in Efficient Graded Bandgap Solar Cells.

    Science.gov (United States)

    Wen, Shiya; Li, Miaozi; Yang, Junyu; Mei, Xianglin; Wu, Bin; Liu, Xiaolin; Heng, Jingxuan; Qin, Donghuan; Hou, Lintao; Xu, Wei; Wang, Dan

    2017-11-08

    CdSe x Te 1-x semiconductor nanocrystals (NCs), being rod-shaped/irregular dot-shaped in morphology, have been fabricated via a simple hot-injection method. The NCs composition is well controlled through varying molar ratios of Se to Te precursors. Through changing the composition of the CdSe x Te 1-x NCs, the spectral absorption of the NC thin film between 570-800 nm is proved to be tunable. It is shown that the bandgap of homogeneously alloyed CdSe x Te 1-x active thin film is nonlinearly correlated with the different compositions, which is perceived as optical bowing. The solar cell devices based on CdSe x Te 1-x NCs with the structure of ITO/ZnO/CdSe/CdSe x Te 1-x /MoO x /Au and the graded bandgap ITO/ZnO/CdSe( w / o )/CdSe x Te 1-x /CdTe/MoO x /Au are systematically evaluated. It was found that the performance of solar cells degrades almost linearly with the increase of alloy NC film thickness with respect to ITO/ZnO/CdSe/CdSe 0.2 Te 0.8 /MoO x /Au. From another perspective, in terms of the graded bandgap structure of ITO/ZnO/CdSe/CdSe x Te 1-x /CdTe/MoO x /Au, the performance is improved in contrast with its single-junction analogues. The graded bandgap structure is proved to be efficient when absorbing spectrum and the solar cells fabricated under the structure of ITO/ZnO/CdSe 0.8 Te 0.2 /CdSe 0.2 Te 0.8 /CdTe/MoO x /Au indicate power conversion efficiency (PCE) of 6.37%, a value among the highest for solution-processed inversely-structured CdSe x Te 1-x NC solar cells. As the NC solar cells are solution-processed under environmental conditions, they are promising for fabricating solar cells at low cost, roll by roll and in large area.

  4. Super-quantum curves from super-eigenvalue models

    Energy Technology Data Exchange (ETDEWEB)

    Ciosmak, Paweł [Faculty of Mathematics, Informatics and Mechanics, University of Warsaw,ul. Banacha 2, 02-097 Warsaw (Poland); Hadasz, Leszek [M. Smoluchowski Institute of Physics, Jagiellonian University,ul. Łojasiewicza 11, 30-348 Kraków (Poland); Manabe, Masahide [Faculty of Physics, University of Warsaw,ul. Pasteura 5, 02-093 Warsaw (Poland); Sułkowski, Piotr [Faculty of Physics, University of Warsaw,ul. Pasteura 5, 02-093 Warsaw (Poland); Walter Burke Institute for Theoretical Physics, California Institute of Technology,1200 E. California Blvd, Pasadena, CA 91125 (United States)

    2016-10-10

    In modern mathematical and theoretical physics various generalizations, in particular supersymmetric or quantum, of Riemann surfaces and complex algebraic curves play a prominent role. We show that such supersymmetric and quantum generalizations can be combined together, and construct supersymmetric quantum curves, or super-quantum curves for short. Our analysis is conducted in the formalism of super-eigenvalue models: we introduce β-deformed version of those models, and derive differential equations for associated α/β-deformed super-matrix integrals. We show that for a given model there exists an infinite number of such differential equations, which we identify as super-quantum curves, and which are in one-to-one correspondence with, and have the structure of, super-Virasoro singular vectors. We discuss potential applications of super-quantum curves and prospects of other generalizations.

  5. Super-quantum curves from super-eigenvalue models

    International Nuclear Information System (INIS)

    Ciosmak, Paweł; Hadasz, Leszek; Manabe, Masahide; Sułkowski, Piotr

    2016-01-01

    In modern mathematical and theoretical physics various generalizations, in particular supersymmetric or quantum, of Riemann surfaces and complex algebraic curves play a prominent role. We show that such supersymmetric and quantum generalizations can be combined together, and construct supersymmetric quantum curves, or super-quantum curves for short. Our analysis is conducted in the formalism of super-eigenvalue models: we introduce β-deformed version of those models, and derive differential equations for associated α/β-deformed super-matrix integrals. We show that for a given model there exists an infinite number of such differential equations, which we identify as super-quantum curves, and which are in one-to-one correspondence with, and have the structure of, super-Virasoro singular vectors. We discuss potential applications of super-quantum curves and prospects of other generalizations.

  6. Super-quantum curves from super-eigenvalue models

    Science.gov (United States)

    Ciosmak, Paweł; Hadasz, Leszek; Manabe, Masahide; Sułkowski, Piotr

    2016-10-01

    In modern mathematical and theoretical physics various generalizations, in particular supersymmetric or quantum, of Riemann surfaces and complex algebraic curves play a prominent role. We show that such supersymmetric and quantum generalizations can be combined together, and construct supersymmetric quantum curves, or super-quantum curves for short. Our analysis is conducted in the formalism of super-eigenvalue models: we introduce β-deformed version of those models, and derive differential equations for associated α/ β-deformed super-matrix integrals. We show that for a given model there exists an infinite number of such differential equations, which we identify as super-quantum curves, and which are in one-to-one correspondence with, and have the structure of, super-Virasoro singular vectors. We discuss potential applications of super-quantum curves and prospects of other generalizations.

  7. Transmission properties of hollow-core photonic bandgap fibers

    DEFF Research Database (Denmark)

    Falk, Charlotte Ijeoma; Hald, Jan; Petersen, Jan C.

    2010-01-01

    Variations in optical transmission of four types of hollow-core photonic bandgap fibers are measured as a function of laser frequency. These variations influence the potential accuracy of gas sensors based on molecular spectroscopy in hollow-core fibers.......Variations in optical transmission of four types of hollow-core photonic bandgap fibers are measured as a function of laser frequency. These variations influence the potential accuracy of gas sensors based on molecular spectroscopy in hollow-core fibers....

  8. Van der Waals MoS2/VO2 heterostructure junction with tunable rectifier behavior and efficient photoresponse.

    Science.gov (United States)

    Oliva, Nicoló; Casu, Emanuele Andrea; Yan, Chen; Krammer, Anna; Rosca, Teodor; Magrez, Arnaud; Stolichnov, Igor; Schueler, Andreas; Martin, Olivier J F; Ionescu, Adrian Mihai

    2017-10-27

    Junctions between n-type semiconductors of different electron affinity show rectification if the junction is abrupt enough. With the advent of 2D materials, we are able to realize thin van der Waals (vdW) heterostructures based on a large diversity of materials. In parallel, strongly correlated functional oxides have emerged, having the ability to show reversible insulator-to-metal (IMT) phase transition by collapsing their electronic bandgap under a certain external stimulus. Here, we report for the first time the electronic and optoelectronic characterization of ultra-thin n-n heterojunctions fabricated using deterministic assembly of multilayer molybdenum disulphide (MoS 2 ) on a phase transition material, vanadium dioxide (VO 2 ). The vdW MoS 2 /VO 2 heterojunction combines the excellent blocking capability of an n-n junction with a high conductivity in on-state, and it can be turned into a Schottky rectifier at high applied voltage or at temperatures higher than 68 °C, exploiting the metal state of VO 2 . We report tunable diode-like current rectification with a good diode ideality factor of 1.75 and excellent conductance swing of 120 mV/dec. Finally, we demonstrate unique tunable photosensitivity and excellent junction photoresponse in the 500/650 nm wavelength range.

  9. Second-generation PVCC design with a dielectric light injector and polyhedron interior cavity

    Science.gov (United States)

    Ortabasi, Ugur; Winston, Roland; Ellis, Scott

    2006-08-01

    The Photovoltaic Cavity Converter (PVCC) under development is a novel approach to convert highly concentrated solar radiation into electricity via a photon entrapment process and subsequent spectral stripping. Equipped with a multi-bandgap, single junction cell system PVCC circumvents most of the present limitations of the four (or more)-junction cell systems with vertical architecture. Our previous studies have shown that the PVCC concept has the potential to reach a collective conversion efficiency of 50% in the near term. Based on our past experiences regarding the cavity geometry and the light injection method we have developed a second generation design for the PVCC that overcomes the limitations of the first generation prototype.

  10. Ultrasensitive tunability of the direct bandgap of 2D InSe flakes via strain engineering

    Science.gov (United States)

    Li, Yang; Wang, Tianmeng; Wu, Meng; Cao, Ting; Chen, Yanwen; Sankar, Raman; Ulaganathan, Rajesh K.; Chou, Fangcheng; Wetzel, Christian; Xu, Cheng-Yan; Louie, Steven G.; Shi, Su-Fei

    2018-04-01

    InSe, a member of the layered materials family, is a superior electronic and optical material which retains a direct bandgap feature from the bulk to atomically thin few-layers and high electronic mobility down to a single layer limit. We, for the first time, exploit strain to drastically modify the bandgap of two-dimensional (2D) InSe nanoflakes. We demonstrated that we could decrease the bandgap of a few-layer InSe flake by 160 meV through applying an in-plane uniaxial tensile strain to 1.06% and increase the bandgap by 79 meV through applying an in-plane uniaxial compressive strain to 0.62%, as evidenced by photoluminescence (PL) spectroscopy. The large reversible bandgap change of ~239 meV arises from a large bandgap change rate (bandgap strain coefficient) of few-layer InSe in response to strain, ~154 meV/% for uniaxial tensile strain and ~140 meV/% for uniaxial compressive strain, representing the most pronounced uniaxial strain-induced bandgap strain coefficient experimentally reported in 2D materials. We developed a theoretical understanding of the strain-induced bandgap change through first-principles DFT and GW calculations. We also confirmed the bandgap change by photoconductivity measurements using excitation light with different photon energies. The highly tunable bandgap of InSe in the infrared regime should enable a wide range of applications, including electro-mechanical, piezoelectric and optoelectronic devices.

  11. Bandgap Engineering of Double Perovskites for One- and Two-photon Water Splitting

    DEFF Research Database (Denmark)

    Castelli, Ivano Eligio; Thygesen, Kristian Sommer; Jacobsen, Karsten Wedel

    2013-01-01

    Computational screening is becoming increasingly useful in the search for new materials. We are interested in the design of new semiconductors to be used for light harvesting in a photoelectrochemical cell. In the present paper, we study the double perovskite structures obtained by combining 46...... stable cubic perovskites which was found to have a finite bandgap in a previous screening-study. The four-metal double perovskite space is too large to be investigated completely. For this reason we propose a method for combining different metals to obtain a desired bandgap. We derive some bandgap design...... rules on how to combine two cubic perovskites to generate a new combination with a larger or smaller bandgap compared with the constituent structures. Those rules are based on the type of orbitals involved in the conduction bands and on the size of the two cubic bandgaps. We also see that a change...

  12. Robust microbubble tracking for super resolution imaging in ultrasound

    DEFF Research Database (Denmark)

    Hansen, Kristoffer B.; Villagómez Hoyos, Carlos Armando; Brasen, Jens Christian

    2016-01-01

    Currently ultrasound resolution is limited by diffraction to approximately half the wavelength of the sound wave employed. In recent years, super resolution imaging techniques have overcome the diffraction limit through the localization and tracking of a sparse set of microbubbles through...... the vasculature. However, this has only been performed on fixated tissue, limiting its clinical application. This paper proposes a technique for making super resolution images on non-fixated tissue by first compensating for tissue movement and then tracking the individual microbubbles. The experiment is performed...... on the kidney of a anesthetized Sprage-Dawley rat by infusing SonoVue at 0.1× original concentration. The algorithm demonstrated in vivo that the motion compensation was capable of removing the movement caused by the mechanical ventilator. The results shows that microbubbles were localized with a higher...

  13. Optically controlled photonic bandgap structures for microstrip circuits

    International Nuclear Information System (INIS)

    Cadman, Darren Arthur

    2003-01-01

    This thesis is concerned with the optical control of microwave photonic bandgap circuits using high resistivity silicon. Photoconducting processes that occur within silicon are investigated. The influence of excess carrier density on carrier mobility and lifetime is examined. In addition, electron-hole pair recombination mechanisms (Shockley-Read-Hall, Auger, radiative and surface) are investigated. The microwave properties of silicon are examined, in particular the variation of silicon reflectivity with excess carrier density. Filtering properties of microstrip photonic bandgap structures and how they may be controlled optically are studied. A proof-of-concept microstrip photonic bandgap structure with optical control is designed, simulated and measured. With no optical illumination incident upon the silicon, the microstrip photonic bandgap structure's filtering properties are well-defined; a 3dB stopband width of 2.6GHz, a 6dB bandwidth of 2GHz and stopband depth of -11.6dB at the centre frequency of 9.9GHz. When the silicon is illuminated, the structure's filtering properties are suppressed. Under illumination the experimental results display an increase in S 21 of 6.5dB and a reduction in S 11 of more than 10dB at 9.9GHz. A comparison of measured and simulated results reveal that the photogenerated excess carrier density is between 4 x 10 15 cm -3 and 1.1 x 10 16 cm -3 . (author)

  14. Liquid Crystal photonic Bandgap Fiber Devices

    DEFF Research Database (Denmark)

    Wei, Lei

    In this Ph.D. thesis, an experimental investigation of liquid crystal photonic bandgap (LCPBG) fiber devices and applications is presented. Photonic crystal fibers (PCFs) consist of a cladding microstructure with periodic index variations and a core defined by a defect of the structure. The prese......In this Ph.D. thesis, an experimental investigation of liquid crystal photonic bandgap (LCPBG) fiber devices and applications is presented. Photonic crystal fibers (PCFs) consist of a cladding microstructure with periodic index variations and a core defined by a defect of the structure...... of each LCPBG fiber. Finally, the applications for LCPBG fiber devices based on the on-chip platform design have been demonstrated in realizing microwave true-time delay and creating an electrically tunable fiber laser. Referatet mailes...

  15. Water-Dependent Photonic Bandgap in Silica Artificial Opals

    OpenAIRE

    Gallego-Gomez, Francisco; Blanco, Alvaro; Canalejas-Tejero, Victor; Lopez, Cefe

    2011-01-01

    Some characteristics of silica-based structuresa-like the photonic properties of artificial opals formed by silica spheresa-can be greatly affected by the presence of adsorbed water. The reversible modification of the water content of an opal is investigated here by moderate heating (below 300 °C) and measuring in situ the changes in the photonic bandgap. Due to reversible removal of interstitial water, large blueshifts of 30 nm and a bandgap narrowing of 7% are observed. The latter is partic...

  16. Super-resolution for scanning light stimulation systems

    Energy Technology Data Exchange (ETDEWEB)

    Bitzer, L. A.; Neumann, K.; Benson, N., E-mail: niels.benson@uni-due.de; Schmechel, R. [Faculty of Engineering, NST and CENIDE, University of Duisburg-Essen, Bismarckstr. 81, 47057 Duisburg (Germany)

    2016-09-15

    Super-resolution (SR) is a technique used in digital image processing to overcome the resolution limitation of imaging systems. In this process, a single high resolution image is reconstructed from multiple low resolution images. SR is commonly used for CCD and CMOS (Complementary Metal-Oxide-Semiconductor) sensor images, as well as for medical applications, e.g., magnetic resonance imaging. Here, we demonstrate that super-resolution can be applied with scanning light stimulation (LS) systems, which are common to obtain space-resolved electro-optical parameters of a sample. For our purposes, the Projection Onto Convex Sets (POCS) was chosen and modified to suit the needs of LS systems. To demonstrate the SR adaption, an Optical Beam Induced Current (OBIC) LS system was used. The POCS algorithm was optimized by means of OBIC short circuit current measurements on a multicrystalline solar cell, resulting in a mean square error reduction of up to 61% and improved image quality.

  17. Physical properties and analytical models of band-to-band tunneling in low-bandgap semiconductors

    International Nuclear Information System (INIS)

    Shih, Chun-Hsing; Dang Chien, Nguyen

    2014-01-01

    Low-bandgap semiconductors, such as InAs and InSb, are widely considered to be ideal for use in tunnel field-effect transistors to ensure sufficient on-current boosting at low voltages. This work elucidates the physical and mathematical considerations of applying conventional band-to-band tunneling models in low-bandgap semiconductors, and presents a new analytical alternative for practical use. The high-bandgap tunneling generates most at maximum field region with shortest tunnel path, whereas the low-bandgap generations occur dispersedly because of narrow tunnel barrier. The local electrical field associated with tunneling-electron numbers dominates in low-bandgap materials. This work proposes decoupled electric-field terms in the pre-exponential factor and exponential function of generation-rate expressions. Without fitting, the analytical results and approximated forms exhibit great agreements with the sophisticated forms both in high- and low-bandgap semiconductors. Neither nonlocal nor local field is appropriate to be used in numerical simulations for predicting the tunneling generations in a variety of low- and high-bandgap semiconductors

  18. Multi-fidelity machine learning models for accurate bandgap predictions of solids

    International Nuclear Information System (INIS)

    Pilania, Ghanshyam; Gubernatis, James E.; Lookman, Turab

    2016-01-01

    Here, we present a multi-fidelity co-kriging statistical learning framework that combines variable-fidelity quantum mechanical calculations of bandgaps to generate a machine-learned model that enables low-cost accurate predictions of the bandgaps at the highest fidelity level. Additionally, the adopted Gaussian process regression formulation allows us to predict the underlying uncertainties as a measure of our confidence in the predictions. In using a set of 600 elpasolite compounds as an example dataset and using semi-local and hybrid exchange correlation functionals within density functional theory as two levels of fidelities, we demonstrate the excellent learning performance of the method against actual high fidelity quantum mechanical calculations of the bandgaps. The presented statistical learning method is not restricted to bandgaps or electronic structure methods and extends the utility of high throughput property predictions in a significant way.

  19. 3D super-virtual refraction interferometry

    KAUST Repository

    Lu, Kai

    2014-08-05

    Super-virtual refraction interferometry enhances the signal-to-noise ratio of far-offset refractions. However, when applied to 3D cases, traditional 2D SVI suffers because the stationary positions of the source-receiver pairs might be any place along the recording plane, not just along a receiver line. Moreover, the effect of enhancing the SNR can be limited because of the limitations in the number of survey lines, irregular line geometries, and azimuthal range of arrivals. We have developed a 3D SVI method to overcome these problems. By integrating along the source or receiver lines, the cross-correlation or the convolution result of a trace pair with the source or receiver at the stationary position can be calculated without the requirement of knowing the stationary locations. In addition, the amplitudes of the cross-correlation and convolution results are largely strengthened by integration, which is helpful to further enhance the SNR. In this paper, both synthetic and field data examples are presented, demonstrating that the super-virtual refractions generated by our method have accurate traveltimes and much improved SNR.

  20. Sub-bandgap response of graphene/SiC Schottky emitter bipolar phototransistor examined by scanning photocurrent microscopy

    Science.gov (United States)

    Barker, Bobby G., Jr.; Chava, Venkata Surya N.; Daniels, Kevin M.; Chandrashekhar, M. V. S.; Greytak, Andrew B.

    2018-01-01

    Graphene layers grown epitaxially on SiC substrates are attractive for a variety of sensing and optoelectronic applications because the graphene acts as a transparent, conductive, and chemically responsive layer that is mated to a wide-bandgap semiconductor with large breakdown voltage. Recent advances in control of epitaxial growth and doping of SiC epilayers have increased the range of electronic device architectures that are accessible with this system. In particular, a recently-introduced Schottky-emitter bipolar phototransistor (SEPT) based on an epitaxial graphene (EG) emitter grown on a p-SiC base epilayer has been found to exhibit a maximum common emitter current gain of 113 and a UV responsivity of 7.1 A W-1. The behavior of this device, formed on an n +-SiC substrate that serves as the collector, was attributed to a very large minority carrier injection efficiency at the EG/p-SiC Schottky contact. This large minority carrier injection efficiency is in turn related to the large built-in potential found at a EG/p-SiC Schottky junction. The high performance of this device makes it critically important to analyze the sub bandgap visible response of the device, which provides information on impurity states and polytype inclusions in the crystal. Here, we employ scanning photocurrent microscopy (SPCM) with sub-bandgap light as well as a variety of other techniques to clearly demonstrate a localized response based on the graphene transparent electrode and an approximately 1000-fold difference in responsivity between 365 nm and 444 nm excitation. A stacking fault propagating from the substrate/epilayer interface, assigned as a single layer of the 8H-SiC polytype within the 4H-SiC matrix, is found to locally increase the photocurrent substantially. The discovery of this polytype heterojunction opens the potential for further development of heteropolytype devices based on the SEPT architecture.

  1. Super jackstraws and super waterwheels

    International Nuclear Information System (INIS)

    Cho, Jin-Ho

    2007-01-01

    We construct various new BPS states of D-branes preserving 8 supersymmetries. These include super Jackstraws (a bunch of scattered D- or (p, q)-strings preserving supersymmetries), and super waterwheels (a number of D2-branes intersecting at generic angles on parallel lines while preserving supersymmetries). Super D-Jackstraws are scattered in various dimensions but are dynamical with all their intersections following a common null direction. Meanwhile, super (p, q)-Jackstraws form a planar static configuration. We show that the SO(2) subgroup of SL(2, R), the group of classical S-duality transformations in IIB theory, can be used to generate this latter configuration of variously charged (p, q)-strings intersecting at various angles. The waterwheel configuration of D2-branes preserves 8 supersymmetries as long as the 'critical' Born-Infeld electric fields are along the common direction

  2. Resonance fluorescence spectrum in a two-band photonic bandgap crystal

    Science.gov (United States)

    Lee, Ray-Kuang; Lai, Yinchieh

    2003-05-01

    Steady state resonance fluorescence spectra from a two-level atom embedded in a photonic bandgap crystal and resonantly driven by a classical pump light are calculated. The photonic crystal is considered to be with a small bandgap which is in the order of magnitude of the Rabi frequency and is modeled by the anisotropic two-band dispersion relation. Non-Markovian noises caused by the non-uniform distribution of photon density states near the photonic bandgap are taken into account by a new approach which linearizes the optical Bloch equations by using the Liouville operator expansion. Fluorescence spectra that only exhibit sidebands of the Mollow triplet are found, indicating that there is no coherent Rayleigh scattering process.

  3. Photonic bandgap narrowing in conical hollow core Bragg fibers

    Energy Technology Data Exchange (ETDEWEB)

    Ozturk, Fahri Emre; Yildirim, Adem; Kanik, Mehmet [UNAM-National Nanotechnology Research Center, Bilkent University, 06800 Ankara (Turkey); Institute of Materials Science and Nanotechnology, Bilkent University, 06800 Ankara (Turkey); Bayindir, Mehmet, E-mail: bayindir@nano.org.tr [UNAM-National Nanotechnology Research Center, Bilkent University, 06800 Ankara (Turkey); Institute of Materials Science and Nanotechnology, Bilkent University, 06800 Ankara (Turkey); Department of Physics, Bilkent University, 06800 Ankara (Turkey)

    2014-08-18

    We report the photonic bandgap engineering of Bragg fibers by controlling the thickness profile of the fiber during the thermal drawing. Conical hollow core Bragg fibers were produced by thermal drawing under a rapidly alternating load, which was applied by introducing steep changes to the fiber drawing speed. In conventional cylindrical Bragg fibers, light is guided by omnidirectional reflections from interior dielectric mirrors with a single quarter wave stack period. In conical fibers, the diameter reduction introduced a gradient of the quarter wave stack period along the length of the fiber. Therefore, the light guided within the fiber encountered slightly smaller dielectric layer thicknesses at each reflection, resulting in a progressive blueshift of the reflectance spectrum. As the reflectance spectrum shifts, longer wavelengths of the initial bandgap cease to be omnidirectionally reflected and exit through the cladding, which narrows the photonic bandgap. A narrow transmission bandwidth is particularly desirable in hollow waveguide mid-infrared sensing schemes, where broadband light is coupled to the fiber and the analyte vapor is introduced into the hollow core to measure infrared absorption. We carried out sensing simulations using the absorption spectrum of isopropyl alcohol vapor to demonstrate the importance of narrow bandgap fibers in chemical sensing applications.

  4. Nonlinear Super Integrable Couplings of Super Classical-Boussinesq Hierarchy

    Directory of Open Access Journals (Sweden)

    Xiuzhi Xing

    2014-01-01

    Full Text Available Nonlinear integrable couplings of super classical-Boussinesq hierarchy based upon an enlarged matrix Lie super algebra were constructed. Then, its super Hamiltonian structures were established by using super trace identity. As its reduction, nonlinear integrable couplings of the classical integrable hierarchy were obtained.

  5. Dispersion Mechanisms of a Tidal River Junction in the Sacramento–San Joaquin Delta, California

    Directory of Open Access Journals (Sweden)

    Karla T. Gleichauf

    2014-12-01

    Full Text Available doi: http://dx.doi.org/10.15447/sfews.2014v12iss4art1In branching channel networks, such as in the Sacramento–San Joaquin River Delta, junction flow dynamics contribute to dispersion of ecologically important entities such as fish, pollutants, nutrients, salt, sediment, and phytoplankton. Flow transport through a junction largely arises from velocity phasing in the form of divergent flow between junction channels for a portion of the tidal cycle. Field observations in the Georgiana Slough junction, which is composed of the North and South Mokelumne rivers, Georgiana Slough, and the Mokelumne River, show that flow phasing differences between these rivers arise from operational, riverine, and tidal forcing. A combination of Acoustic Doppler Current Profile (ADCP boat transecting and moored ADCPs over a spring–neap tidal cycle (May to  June 2012 monitored the variability of spatial and temporal velocity, respectively. Two complementary drifter studies enabled assessment of local transport through the junction to identify small-scale intrajunction dynamics. We supplemented field results with numerical simulations using the SUNTANS model to demonstrate the importance of phasing offsets for junction transport and dispersion. Different phasing of inflows to the junction resulted in scalar patchiness that is characteristic of MacVean and Stacey’s (2011 advective tidal trapping. Furthermore, we observed small-scale junction flow features including a recirculation zone and shear layer, which play an important role in intra-junction mixing over time scales shorter than the tidal cycle (i.e., super-tidal time scales. The study period spanned open- and closed-gate operations at the Delta Cross Channel. Synthesis of field observations and modeling efforts suggest that management operations related to the Delta Cross Channel can strongly affect transport in the Delta by modifying the relative contributions of tidal and riverine flows, thereby

  6. Low-bandgap polymer photovoltaic cells

    NARCIS (Netherlands)

    Duren, van J.K.J.; Dhanabalan, A.; Hal, van P.A.; Janssen, R.A.J.

    2001-01-01

    A-novel low-bandgap conjugated polymer (PTPTB, Eg = ~1.6 eV), consisting of alternating electron-rich N-dodecyl-2,5-bis(2'-thienyl)pyrrole (TPT) and electron-deficient 2,1,3-benzothiadiazole (B) units, as a donor material is studied together with a soluble fullerene derivative (PCBM) as acceptor to

  7. Bandgap Engineering of Lead-Free Double Perovskite Cs2 AgBiBr6 through Trivalent Metal Alloying.

    Science.gov (United States)

    Du, Ke-Zhao; Meng, Weiwei; Wang, Xiaoming; Yan, Yanfa; Mitzi, David B

    2017-07-03

    The double perovskite family, A 2 M I M III X 6 , is a promising route to overcome the lead toxicity issue confronting the current photovoltaic (PV) standout, CH 3 NH 3 PbI 3 . Given the generally large indirect band gap within most known double perovskites, band-gap engineering provides an important approach for targeting outstanding PV performance within this family. Using Cs 2 AgBiBr 6 as host, band-gap engineering through alloying of In III /Sb III has been demonstrated in the current work. Cs 2 Ag(Bi 1-x M x )Br 6 (M=In, Sb) accommodates up to 75 % In III with increased band gap, and up to 37.5 % Sb III with reduced band gap; that is, enabling ca. 0.41 eV band gap modulation through introduction of the two metals, with smallest value of 1.86 eV for Cs 2 Ag(Bi 0.625 Sb 0.375 )Br 6 . Band structure calculations indicate that opposite band gap shift directions associated with Sb/In substitution arise from different atomic configurations for these atoms. Associated photoluminescence and environmental stability of the three-metal systems are also assessed. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  8. Study on collapse mechanism of junction between greatly deeper shaft and horizontal drifts (Contract research)

    International Nuclear Information System (INIS)

    Kurosaki, Yukio; Yamachi, Hiroshi; Katsunuma, Yoshio; Nakata, Masao; Kuwahara, Hideki; Yamada, Fumitaka; Matsushita, Kiyoshi; Sato, Toshinori

    2008-03-01

    The Mizunami underground research laboratory is planned to consist of greatly deeper shaft and horizontal drifts. A junction space between a greatly deeper shaft and horizontal drifts forms which would take a complicated mechanical behavior during a junction excavation. However, a quantitative design method of supporting measures for a deep junction has not yet been established. This is because a conventional shaft design has been conducted based on past experience. Detail records have not been left either in what kind of collapses and deformed phenomena occurring in shaft constructions in a past. In order to examine a collapse mechanism of greatly deeper shaft junction, we have conducted literature surveys and interview studies concerned with deep shaft construction works in a past, and investigated what collapses or difficulties had been occurred in deep shaft junctions. Considering the results of investigations with reviews of intellectuals, a collapse mechanism of a super deep shaft junction depends on both a construction procedure of shaft junction and a geological condition at great depth. During a construction of a shaft junction, stress state of rock masses near junction wall would take a complicated stress path. Especially, it should be necessary to take a most careful consideration on that tangential stress acted around a shaft wall may reduce during horizontal drift excavation. On the other hand, where greatly deeper junction intersects faults and/or fractures with a large angle, a collapse called 'Take-nuke' may occur or extraordinary earth pressure acts on a concrete wall. This is the most typical difficulties during shaft construction. In order to recognize a mechanism of these phenomena and to find out a cause of collapse generation, numerical studies that can simulate a practical rock mass behavior around a shaft junction should be carry out. We demonstrate the finite difference method is most adequate for these simulations with intellectual review

  9. AlGaAs top solar cell for mechanical attachment in a multi-junction tandem concentrator solar cell stack

    Science.gov (United States)

    Dinetta, L. C.; Hannon, M. H.; Cummings, J. R.; Mcneeley, J. B.; Barnett, Allen M.

    1990-01-01

    Free-standing, transparent, tunable bandgap AlxGa1-xAs top solar cells have been fabricated for mechanical attachment in a four terminal tandem stack solar cell. Evaluation of the device results has demonstrated 1.80 eV top solar cells with efficiencies of 18 percent (100 X, and AM0) which would yield stack efficiencies of 31 percent (100 X, AM0) with a silicon bottom cell. When fully developed, the AlxGa1-xAs/Si mechanically-stacked two-junction solar cell concentrator system can provide efficiencies of 36 percent (AM0, 100 X). AlxGa1-xAs top solar cells with bandgaps from 1.66 eV to 2.08 eV have been fabricated. Liquid phase epitaxy (LPE) growth techniques have been used and LPE has been found to yield superior AlxGa1-xAs material when compared to molecular beam epitaxy and metal-organic chemical vapor deposition. It is projected that stack assembly technology will be readily applicable to any mechanically stacked multijunction (MSMJ) system. Development of a wide bandgap top solar cell is the only feasible method for obtaining stack efficiencies greater than 40 percent at AM0. System efficiencies of greater than 40 percent can be realized when the AlGaAs top solar cell is used in a three solar cell mechanical stack.

  10. The two Josephson junction flux qubit with large tunneling amplitude

    International Nuclear Information System (INIS)

    Shnurkov, V.I.; Soroka, A.A.; Mel'nik, S.I.

    2008-01-01

    In this paper we discuss solid-state nanoelectronic realizations of Josephson flux qubits with large tunneling amplitude between the two macroscopic states. The latter can be controlled via the height and form of the potential barrier, which is determined by quantum-state engineering of the flux qubit circuit. The simplest circuit of the flux qubit is a superconducting loop interrupted by a Josephson nanoscale tunnel junction. The tunneling amplitude between two macroscopically different states can be increased substantially by engineering of the qubit circuit if the tunnel junction is replaced by a ScS contact. However, only Josephson tunnel junctions are particularly suitable for large-scale integration circuits and quantum detectors with present-day technology. To overcome this difficulty we consider here a flux qubit with high energy-level separation between the 'ground' and 'excited' states, consisting of a superconducting loop with two low-capacitance Josephson tunnel junctions in series. We demonstrate that for real parameters of resonant superposition between the two macroscopic states the tunneling amplitude can reach values greater than 1 K. Analytical results for the tunneling amplitude obtained within the semiclassical approximation by the instanton technique show good correlation with a numerical solution

  11. Below-bandgap photoreflection spectroscopy of semiconductor laser structures

    International Nuclear Information System (INIS)

    Sotnikov, Aleksandr E; Chernikov, Maksim A; Ryabushkin, Oleg A; Trubenko, P; Moshegov, N; Ovchinnikov, A

    2004-01-01

    A new method of modulated light reflection - below-bandgap photoreflection, is considered. Unlike the conventional photoreflection method, the proposed method uses optical pumping by photons of energy smaller than the bandgap of any layer of a semiconductor structure under study. Such pumping allows one to obtain the modulated reflection spectrum for all layers of the structure without excitation of photoluminescence. This method is especially promising for the study of wide-gap semiconductors. The results of the study of semiconductor structures used in modern high-power multimode semiconductor lasers are presented. (laser applications and other topics in quantum electronics)

  12. The super-classical-Boussinesq hierarchy and its super-Hamiltonian structure

    International Nuclear Information System (INIS)

    Si-Xing, Tao; Tie-Cheng, Xia

    2010-01-01

    Based on the constructed Lie superalgebra, the super-classical-Boussinesq hierarchy is obtained. Then, its super-Hamiltonian structure is obtained by making use of super-trace identity. Furthermore, the super-classical-Boussinesq hierarchy is also integrable in the sense of Liouville. (general)

  13. Anomalous band-gap bowing of AlN1−xPx alloy

    International Nuclear Information System (INIS)

    Winiarski, M.J.; Polak, M.; Scharoch, P.

    2013-01-01

    Highlights: •Structural and electronic properties of AlN 1−x P x from first principles. •The supercell and the virtual crystall approximation methods applied and compared. •Anomalously high band-gap bowing found. •Similarities of band-gap behavior to that in BN 1−x P x noticed. •Performance of MBJLDA with the pseudopotential approach discussed. -- Abstract: Electronic structure of zinc blende AlN 1−x P x alloy has been calculated from first principles. Structural optimization has been performed within the framework of LDA and the band-gaps calculated with the modified Becke–Jonson (MBJLDA) method. Two approaches have been examined: the virtual crystal approximation (VCA) and the supercell-based calculations (SC). The composition dependence of the lattice parameter obtained from the SC obeys Vegard’s law whereas the volume optimization in the VCA leads to an anomalous bowing of the lattice constant. A strong correlation between the band-gaps and the structural parameter in the VCA method has been observed. On the other hand, in the SC method the supercell size and atoms arrangement (clustered vs. uniform) appear to have a great influence on the computed band-gaps. In particular, an anomalously big band-gap bowing has been found in the case of a clustered configuration with relaxed geometry. Based on the performed tests and obtained results some general features of MBJLDA are discussed and its performance for similar systems predicted

  14. Energy level alignment and sub-bandgap charge generation in polymer:fullerene bulk heterojunction solar cells.

    Science.gov (United States)

    Tsang, Sai-Wing; Chen, Song; So, Franky

    2013-05-07

    Using charge modulated electroabsorption spectroscopy (CMEAS), for the first time, the energy level alignment of a polymer:fullerene bulk heterojunction photovoltaic cell is directly measured. The charge-transfer excitons generated by the sub-bandgap optical pumping are coupled with the modulating electric field and introduce subtle changes in optical absorption in the sub-bandgap region. This minimum required energy for sub-bandgap charge genreation is defined as the effective bandgap. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  15. A Microfluidic Platform for Correlative Live-Cell and Super-Resolution Microscopy

    Science.gov (United States)

    Tam, Johnny; Cordier, Guillaume Alan; Bálint, Štefan; Sandoval Álvarez, Ángel; Borbely, Joseph Steven; Lakadamyali, Melike

    2014-01-01

    Recently, super-resolution microscopy methods such as stochastic optical reconstruction microscopy (STORM) have enabled visualization of subcellular structures below the optical resolution limit. Due to the poor temporal resolution, however, these methods have mostly been used to image fixed cells or dynamic processes that evolve on slow time-scales. In particular, fast dynamic processes and their relationship to the underlying ultrastructure or nanoscale protein organization cannot be discerned. To overcome this limitation, we have recently developed a correlative and sequential imaging method that combines live-cell and super-resolution microscopy. This approach adds dynamic background to ultrastructural images providing a new dimension to the interpretation of super-resolution data. However, currently, it suffers from the need to carry out tedious steps of sample preparation manually. To alleviate this problem, we implemented a simple and versatile microfluidic platform that streamlines the sample preparation steps in between live-cell and super-resolution imaging. The platform is based on a microfluidic chip with parallel, miniaturized imaging chambers and an automated fluid-injection device, which delivers a precise amount of a specified reagent to the selected imaging chamber at a specific time within the experiment. We demonstrate that this system can be used for live-cell imaging, automated fixation, and immunostaining of adherent mammalian cells in situ followed by STORM imaging. We further demonstrate an application by correlating mitochondrial dynamics, morphology, and nanoscale mitochondrial protein distribution in live and super-resolution images. PMID:25545548

  16. Multi-cavity locally resonant structure with the low frequency and broad band-gaps

    Directory of Open Access Journals (Sweden)

    Jiulong Jiang

    2016-11-01

    Full Text Available A multi-cavity periodic structure with the characteristic of local resonance was proposed in the paper. The low frequency band-gap structure was comparatively analyzed by the finite element method (FEM and electric circuit analogy (ECA. Low frequency band-gap can be opened through the dual influence of the coupling’s resonance in the cavity and the interaction among the couplings between structures. Finally, the influence of the structural factors on the band-gap was analyzed. The results show that the structure, which is divided into three parts equally, has a broader effective band-gap below the frequency of 200 Hz. It is also proved that reducing the interval between unit structures can increase the intensity of the couplings among the structures. And in this way, the width of band-gap would be expanded significantly. Through the parameters adjustment, the structure enjoys a satisfied sound insulation effect below the frequency of 500Hz. In the area of low frequency noise reduction, the structure has a lot of potential applications.

  17. A Direct Bandgap Copper-Antimony Halide Perovskite.

    Science.gov (United States)

    Vargas, Brenda; Ramos, Estrella; Pérez-Gutiérrez, Enrique; Alonso, Juan Carlos; Solis-Ibarra, Diego

    2017-07-12

    Since the establishment of perovskite solar cells (PSCs), there has been an intense search for alternative materials to replace lead and improve their stability toward moisture and light. As single-metal perovskite structures have yielded unsatisfactory performances, an alternative is the use of double perovskites that incorporate a combination of metals. To this day, only a handful of these compounds have been synthesized, but most of them have indirect bandgaps and/or do not have bandgaps energies well-suited for photovoltaic applications. Here we report the synthesis and characterization of a unique mixed metal ⟨111⟩-oriented layered perovskite, Cs 4 CuSb 2 Cl 12 (1), that incorporates Cu 2+ and Sb 3+ into layers that are three octahedra thick (n = 3). In addition to being made of abundant and nontoxic elements, we show that this material behaves as a semiconductor with a direct bandgap of 1.0 eV and its conductivity is 1 order of magnitude greater than that of MAPbI 3 (MA = methylammonium). Furthermore, 1 has high photo- and thermal-stability and is tolerant to humidity. We conclude that 1 is a promising material for photovoltaic applications and represents a new type of layered perovskite structure that incorporates metals in 2+ and 3+ oxidation states, thus significantly widening the possible combinations of metals to replace lead in PSCs.

  18. A Dual Super-Element Domain Decomposition Approach for Parallel Nonlinear Finite Element Analysis

    Science.gov (United States)

    Jokhio, G. A.; Izzuddin, B. A.

    2015-05-01

    This article presents a new domain decomposition method for nonlinear finite element analysis introducing the concept of dual partition super-elements. The method extends ideas from the displacement frame method and is ideally suited for parallel nonlinear static/dynamic analysis of structural systems. In the new method, domain decomposition is realized by replacing one or more subdomains in a "parent system," each with a placeholder super-element, where the subdomains are processed separately as "child partitions," each wrapped by a dual super-element along the partition boundary. The analysis of the overall system, including the satisfaction of equilibrium and compatibility at all partition boundaries, is realized through direct communication between all pairs of placeholder and dual super-elements. The proposed method has particular advantages for matrix solution methods based on the frontal scheme, and can be readily implemented for existing finite element analysis programs to achieve parallelization on distributed memory systems with minimal intervention, thus overcoming memory bottlenecks typically faced in the analysis of large-scale problems. Several examples are presented in this article which demonstrate the computational benefits of the proposed parallel domain decomposition approach and its applicability to the nonlinear structural analysis of realistic structural systems.

  19. A super soliton connection

    International Nuclear Information System (INIS)

    Gurses, M.; Oguz, O.

    1985-07-01

    Integrable super non-linear classical partial differential equations are considered. A super s1(2,R) algebra valued connection 1-form is constructed. It is shown that curvature 2-form of this super connection vanishes by virtue of the integrable super equations of motion. A super extension of the AKNS scheme is presented and a class of super extension of the Lax hierarchy and super non-linear Schroedinger equation are found. O(N) extension and the Baecklund transformations of the above super equations are also considered. (author)

  20. Bandgap engineering of lead-free double perovskite Cs_2AgBiBr_6 through trivalent metal alloying

    International Nuclear Information System (INIS)

    Du, Ke-zhao; Mitzi, David B.; Meng, Weiwei; Wang, Xiaoming; Yan, Yanfa

    2017-01-01

    The double perovskite family, A_2M"IM"I"I"IX_6, is a promising route to overcome the lead toxicity issue confronting the current photovoltaic (PV) standout, CH_3NH_3PbI_3. Given the generally large indirect band gap within most known double perovskites, band-gap engineering provides an important approach for targeting outstanding PV performance within this family. Using Cs_2AgBiBr_6 as host, band-gap engineering through alloying of In"I"I"I/Sb"I"I"I has been demonstrated in the current work. Cs_2Ag(Bi_1_-_xM_x)Br_6 (M=In, Sb) accommodates up to 75 % In"I"I"I with increased band gap, and up to 37.5 % Sb"I"I"I with reduced band gap; that is, enabling ca. 0.41 eV band gap modulation through introduction of the two metals, with smallest value of 1.86 eV for Cs_2Ag(Bi_0_._6_2_5Sb_0_._3_7_5)Br_6. Band structure calculations indicate that opposite band gap shift directions associated with Sb/In substitution arise from different atomic configurations for these atoms. Associated photoluminescence and environmental stability of the three-metal systems are also assessed. (copyright 2017 Wiley-VCH Verlag GmbH and Co. KGaA, Weinheim)

  1. Performace of Dilute Nitride Triple Junction Space Solar Cell Grown by MBE

    Directory of Open Access Journals (Sweden)

    Aho Arto

    2017-01-01

    Full Text Available Dilute nitride arsenide antimonide compounds offer widely tailorable band-gaps, ranging from 0.8 eV to 1.4 eV, for the development of lattice-matched multijunction solar cells with three or more junctions. Here we report on the performance of GaInP/GaAs/GaInNAsSb solar cell grown by molecular beam epitaxy. An efficiency of 27% under AM0 conditions is demonstrated. In addition, the cell was measured at different temperatures. The short circuit current density exhibited a temperature coefficient of 0.006 mA/cm2/°C while the corresponding slope for the open circuit voltage was −6.8 mV/°C. Further efficiency improvement, up to 32%, is projected by better current balancing and structural optimization.

  2. Actively doped solid core Photonic Bandgap Fiber

    DEFF Research Database (Denmark)

    Broeng, Jes; Olausson, Christina Bjarnal Thulin; Lyngsøe, Jens Kristian

    2010-01-01

    Solid photonic bandgap fibers offer distributed spectral filtering with extraordinary high suppression. This opens new possibilities of artificially tailoring the gain spectrum of fibers. We present record-performance of such fibers and outline their future applications....

  3. Perspectives in Super-resolved Fluorescence Microscopy: What comes next?

    Science.gov (United States)

    Cremer, Christoph; Birk, Udo

    2016-04-01

    The Nobel Prize in Chemistry 2014 has been awarded to three scientists involved in the development of STED and PALM super-resolution fluorescence microscopy (SRM) methods. They have proven that it is possible to overcome the hundred year old theoretical limit for the resolution potential of light microscopy (of about 200 nm for visible light), which for decades has precluded a direct glimpse of the molecular machinery of life. None of the present-day super-resolution techniques have invalidated the Abbe limit for light optical detection; however, they have found clever ways around it. In this report, we discuss some of the challenges still to be resolved before arising SRM approaches will be fit to bring about the revolution in Biology and Medicine envisaged. Some of the challenges discussed are the applicability to image live and/or large samples, the further enhancement of resolution, future developments of labels, and multi-spectral approaches.

  4. Perspectives in Super-resolved Fluorescence Microscopy: What comes next?

    Directory of Open Access Journals (Sweden)

    Christoph eCremer

    2016-04-01

    Full Text Available The Nobel Prize in Chemistry 2014 has been awarded to three scientists involved in the development of STED and PALM super-resolution fluorescence microscopy (SRM methods. They have proven that it is possible to overcome the hundred year old theoretical limit for the resolution potential of light microscopy (of about 200 nm for visible light, which for decades has precluded a direct glimpse of the molecular machinery of life. None of the present-day super-resolution techniques have invalidated the Abbe limit for light optical detection; however, they have found clever ways around it. In this report, we discuss some of the challenges still to be resolved before arising SRM approaches will be fit to bring about the revolution in Biology and Medicine envisaged. Some of the challenges discussed are the applicability to image live and/or large samples, the further enhancement of resolution, future developments of labels, and multi-spectral approaches.

  5. Bandgap tunability at single-layer molybdenum disulphide grain boundaries

    KAUST Repository

    Huang, Yu Li

    2015-02-17

    Two-dimensional transition metal dichalcogenides have emerged as a new class of semiconductor materials with novel electronic and optical properties of interest to future nanoelectronics technology. Single-layer molybdenum disulphide, which represents a prototype two-dimensional transition metal dichalcogenide, has an electronic bandgap that increases with decreasing layer thickness. Using high-resolution scanning tunnelling microscopy and spectroscopy, we measure the apparent quasiparticle energy gap to be 2.40±0.05 eV for single-layer, 2.10±0.05 eV for bilayer and 1.75±0.05 eV for trilayer molybdenum disulphide, which were directly grown on a graphite substrate by chemical vapour deposition method. More interestingly, we report an unexpected bandgap tunability (as large as 0.85±0.05 eV) with distance from the grain boundary in single-layer molybdenum disulphide, which also depends on the grain misorientation angle. This work opens up new possibilities for flexible electronic and optoelectronic devices with tunable bandgaps that utilize both the control of two-dimensional layer thickness and the grain boundary engineering.

  6. Large Bandgap Semiconductors for Solar Water Splitting

    DEFF Research Database (Denmark)

    Malizia, Mauro

    Photoelectrochemical water splitting represents an eco-friendly technology that could enable the production of hydrogen using water as reactant and solar energy as primary energy source. The exploitation of solar energy for the production of hydrogen would help modern society to reduce the reliance...... on fossil fuels as primary feedstock for hydrogen production and diminish the emission of greenhouse gases in the atmosphere, weakening the global warming phenomenon.The dissertation reports the development of GaP (gallium phosphide) photocathodes as a large bandgap semiconductor for photoelectrochemical...... water splitting devices having tandem design. The increase of the photovoltage produced by GaP under illumination was the main goal of this work. GaP has a bandgap of 2.25 eV and could in theory produce a photovoltage of approximately 1.7 V. Instead, the photovoltage produced by the semiconductor...

  7. Optical devices based on liquid crystal photonic bandgap fibers

    DEFF Research Database (Denmark)

    Alkeskjold, Thomas Tanggaard

    2005-01-01

    the waveguiding mechanism of LC filled PCFs. The principle of tunable fibers based on LCs is thereafter discussed and an alignment and coating study of LC in capillaries is presented. Next, the Liquid Crystal Photonic BandGap (LCPBG) fiber is presented and the waveguiding mechanism is analyzed through plane...... hole. The presence of a LC in the holes of the PCF transforms the fiber from a Total Internal Reflection (TIR) guiding type into a Photonic BandGap (PBG) guiding type, where light is confined to the silica core by coherent scattering from the LC-billed holes. The high dielectric and optical anisotropy...

  8. Experimental Methods for Implementing Graphene Contacts to Finite Bandgap Semiconductors

    DEFF Research Database (Denmark)

    Meyer-Holdt, Jakob

    Present Ph.D. thesis describes my work on implanting graphene as electrical contact to finite bandgap semiconductors. Different transistor architectures, types of graphene and finite bandgap semiconductors have been employed. The device planned from the beginning of my Ph.D. fellowship...... contacts to semiconductor nanowires, more specifically, epitaxially grown InAs nanowires. First, we tried a top down method where CVD graphene was deposited on substrate supported InAs nanowires followed by selective graphene ashing to define graphene electrodes. While electrical contact between...

  9. Complete three-dimensional photonic bandgap in a simple cubic structure

    International Nuclear Information System (INIS)

    Lin, Shawn-Yu; Fleming, J. G.; Lin, Robin; Sigalas, M. M.; Biswas, R.; Ho, K. M.

    2001-01-01

    The creation of a three-dimensional (3D) photonic crystal with simple cubic (sc) symmetry is important for applications in the signal routing and 3D waveguiding of light. With a simple stacking scheme and advanced silicon processing, a 3D sc structure was constructed from a 6-in. silicon wafer. The sc structure is experimentally shown to have a complete 3D photonic bandgap in the infrared wavelength. The finite size effect is also observed, accounting for a larger absolute photonic bandgap

  10. Super-Calogero-Moser-Sutherland systems and free super-oscillators: a mapping

    International Nuclear Information System (INIS)

    Ghosh, Pijush K.

    2001-01-01

    We show that the supersymmetric rational Calogero-Moser-Sutherland (CMS) model of A N+1 -type is equivalent to a set of free super-oscillators, through a similarity transformation. We prescribe methods to construct the complete eigenspectrum and the associated eigenfunctions, both in supersymmetry-preserving as well as supersymmetry-breaking phases, from the free super-oscillator basis. Further we show that a wide class of super-Hamiltonians realizing dynamical OSp(2 vertical bar 2) supersymmetry, which also includes all types of rational super-CMS as a small subset, are equivalent to free super-oscillators. We study BC N+1 -type super-CMS model in some detail to understand the subtleties involved in this method

  11. Super Riemann surfaces

    International Nuclear Information System (INIS)

    Rogers, Alice

    1990-01-01

    A super Riemann surface is a particular kind of (1,1)-dimensional complex analytic supermanifold. From the point of view of super-manifold theory, super Riemann surfaces are interesting because they furnish the simplest examples of what have become known as non-split supermanifolds, that is, supermanifolds where the odd and even parts are genuinely intertwined, as opposed to split supermanifolds which are essentially the exterior bundles of a vector bundle over a conventional manifold. However undoubtedly the main motivation for the study of super Riemann surfaces has been their relevance to the Polyakov quantisation of the spinning string. Some of the papers on super Riemann surfaces are reviewed. Although recent work has shown all super Riemann surfaces are algebraic, some areas of difficulty remain. (author)

  12. First-principles study of bandgap tuning in Ge1-xPbxSe

    Science.gov (United States)

    Lohani, Himanshu

    2018-03-01

    Narrow bandgap and its tuning are important aspects of materials for their technological applications. In this context group IV-VI semiconductors are one of the interesting candidates. In this paper, we explore the possibility of bandgap tuning in one of the family member of this family GeSe by using isoelectronic Pb doping. Our study is first-principles based electronic structure calculations of Ge1-xPbxSe. This study reveals that the Ge-p and Se-p states are strongly hybridized in GeSe and shows a gap in the DOS at Ef in GeSe. This gap reduces systematically with simultaneous enhancement of the states in the near Ef region as a function of Pb doping. This leads tuning of the indirect bandgap in GeSe via Pb doping. The results of the indirect bandgap decrement are consistent with the experimental findings. We propose a mechanism where the electrostatic effect of dopant Pb cation could be responsible for these changes in the electronic structure of GeSe.

  13. Device Modeling of the Performance of Cu(In,GaSe2 Solar Cells with V-Shaped Bandgap Profiles

    Directory of Open Access Journals (Sweden)

    Shou-Yi Kuo

    2014-01-01

    Full Text Available The effect of Cu(In,GaSe2 (CIGS with V-shaped bandgap on device performance is investigated in detail. A series of Ga/(In+Ga ratio are set to study the influence of V-shaped bandgap profile on the electricity of CIGS thin film solar cells. The modeling of device current density-voltage (J-V curve and bandgap grading profile corresponded well to measurement results. Detailed characteristic and modeling results show that an increased gradient of bandgap from valley to the buffer layer CdS will result in a barrier and lead to an enhanced recombination in the valley. This phenomenon can be modified by the back electric field resulting from a gradient bandgap from valley (bandgap minimum to the Mo back contact. These results indicate CIGS-based solar cells can achieve higher performance by optimizing the V-shaped bandgap profile.

  14. BREEDING SUPER-EARTHS AND BIRTHING SUPER-PUFFS IN TRANSITIONAL DISKS

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Eve J.; Chiang, Eugene, E-mail: evelee@berkeley.edu, E-mail: echiang@astro.berkeley.edu [Department of Astronomy, University of California Berkeley, Berkeley, CA 94720-3411 (United States)

    2016-02-01

    The riddle posed by super-Earths (1–4R{sub ⊕}, 2–20M{sub ⊕}) is that they are not Jupiters: their core masses are large enough to trigger runaway gas accretion, yet somehow super-Earths accreted atmospheres that weigh only a few percent of their total mass. We show that this puzzle is solved if super-Earths formed late, as the last vestiges of their parent gas disks were about to clear. This scenario would seem to present fine-tuning problems, but we show that there are none. Ambient gas densities can span many (in one case up to 9) orders of magnitude, and super-Earths can still robustly emerge after ∼0.1–1 Myr with percent-by-weight atmospheres. Super-Earth cores are naturally bred in gas-poor environments where gas dynamical friction has weakened sufficiently to allow constituent protocores to gravitationally stir one another and merge. So little gas is present at the time of core assembly that cores hardly migrate by disk torques: formation of super-Earths can be in situ. The basic picture—that close-in super-Earths form in a gas-poor (but not gas-empty) inner disk, fed continuously by gas that bleeds inward from a more massive outer disk—recalls the largely evacuated but still accreting inner cavities of transitional protoplanetary disks. We also address the inverse problem presented by super-puffs: an uncommon class of short-period planets seemingly too voluminous for their small masses (4–10R{sub ⊕}, 2–6M{sub ⊕}). Super-puffs most easily acquire their thick atmospheres as dust-free, rapidly cooling worlds outside ∼1 AU where nebular gas is colder, less dense, and therefore less opaque. Unlike super-Earths, which can form in situ, super-puffs probably migrated in to their current orbits; they are expected to form the outer links of mean-motion resonant chains, and to exhibit greater water content. We close by confronting observations and itemizing remaining questions.

  15. BREEDING SUPER-EARTHS AND BIRTHING SUPER-PUFFS IN TRANSITIONAL DISKS

    International Nuclear Information System (INIS)

    Lee, Eve J.; Chiang, Eugene

    2016-01-01

    The riddle posed by super-Earths (1–4R ⊕ , 2–20M ⊕ ) is that they are not Jupiters: their core masses are large enough to trigger runaway gas accretion, yet somehow super-Earths accreted atmospheres that weigh only a few percent of their total mass. We show that this puzzle is solved if super-Earths formed late, as the last vestiges of their parent gas disks were about to clear. This scenario would seem to present fine-tuning problems, but we show that there are none. Ambient gas densities can span many (in one case up to 9) orders of magnitude, and super-Earths can still robustly emerge after ∼0.1–1 Myr with percent-by-weight atmospheres. Super-Earth cores are naturally bred in gas-poor environments where gas dynamical friction has weakened sufficiently to allow constituent protocores to gravitationally stir one another and merge. So little gas is present at the time of core assembly that cores hardly migrate by disk torques: formation of super-Earths can be in situ. The basic picture—that close-in super-Earths form in a gas-poor (but not gas-empty) inner disk, fed continuously by gas that bleeds inward from a more massive outer disk—recalls the largely evacuated but still accreting inner cavities of transitional protoplanetary disks. We also address the inverse problem presented by super-puffs: an uncommon class of short-period planets seemingly too voluminous for their small masses (4–10R ⊕ , 2–6M ⊕ ). Super-puffs most easily acquire their thick atmospheres as dust-free, rapidly cooling worlds outside ∼1 AU where nebular gas is colder, less dense, and therefore less opaque. Unlike super-Earths, which can form in situ, super-puffs probably migrated in to their current orbits; they are expected to form the outer links of mean-motion resonant chains, and to exhibit greater water content. We close by confronting observations and itemizing remaining questions

  16. The Super Patalan Numbers

    OpenAIRE

    Richardson, Thomas M.

    2014-01-01

    We introduce the super Patalan numbers, a generalization of the super Catalan numbers in the sense of Gessel, and prove a number of properties analagous to those of the super Catalan numbers. The super Patalan numbers generalize the super Catalan numbers similarly to how the Patalan numbers generalize the Catalan numbers.

  17. Grassmann, super-Kac-Moody and super-derivation algebras

    International Nuclear Information System (INIS)

    Frappat, L.; Ragoucy, E.; Sorba, P.

    1989-05-01

    We study the cyclic cocycles of degree one on the Grassmann algebra and on the super-circle with N supersymmetries (i.e. the tensor product of the algebra of functions on the circle times a Grassmann algebra with N generators). They are related to central extensions of graded loop algebras (i.e. super-Kac-Moody algebras). The corresponding algebras of super-derivations have to be compatible with the cocycle characterizing the extension; we give a general method for determining these algebras and examine in particular the cases N = 1,2,3. We also discuss their relations with the Ademollo et al. algebras, and examine the possibility of defining new kinds of super-conformal algebras, which, for N > 1, generalize the N = 1 Ramond-Neveu-Schwarz algebra

  18. Chemically etched edges of YBa2Cu3O7 films for interconnects, crossovers and Josephson junctions

    International Nuclear Information System (INIS)

    Poppe, U.; Faley, M.I.; Urban, K.; Soltner, H.

    1993-01-01

    To produce damage-free edges is one of the main problems during the preparation of Josephson edge-type junctions and interconnects in multilayer structures including high temperature superconductors. The inherently short and anisotropic coherence length in high temperature superconductors makes it also difficult to fabricate Josephson junctions from these materials. One promising technique which helps to overcome such problems using a nonaqueous chemical etching with a Br-ethanol solution was first presented in a recent publication. Here we report results obtained with the use of this method: test of insulation properties of PrBa 2 Cu 3 O 7 , PrBa 2 Cu 2.85 Ga 0.15 O 7 , and SrTiO 3 used for crossovers and Josephson junctions. Some features of interconnects and Josephson junctions, prepared on the basis of the chemical technique are also discussed. (orig.)

  19. Compact electrically controlled broadband liquid crystal photonic bandgap fiber polarizer

    DEFF Research Database (Denmark)

    Wei, Lei; Alkeskjold, Thomas Tanggaard; Bjarklev, Anders Overgaard

    2009-01-01

    An electrically controlled liquid crystal photonic-bandgap fiber polarizer is experimentally demonstrated. A maximum 21.3dB electrically tunable polarization extinction ratio is achieved with 45° rotatable transmission axis as well as switched on and off in 1300nm–1600nm.......An electrically controlled liquid crystal photonic-bandgap fiber polarizer is experimentally demonstrated. A maximum 21.3dB electrically tunable polarization extinction ratio is achieved with 45° rotatable transmission axis as well as switched on and off in 1300nm–1600nm....

  20. A Polarization Maintaining Filter based on a Liquid-Crystal-Photonic-Bandgap-Fiber

    DEFF Research Database (Denmark)

    Scolari, Lara; Olausson, Christina Bjarnal Thulin; Turchinovich, Dmitry

    2008-01-01

    A polarization maintaining filter based on a liquid-crystal-photonic-bandgap-fiber is demonstrated. Its polarization extinction ratio is 14 dB at 1550 nm. Its tunability is 150 nm.......A polarization maintaining filter based on a liquid-crystal-photonic-bandgap-fiber is demonstrated. Its polarization extinction ratio is 14 dB at 1550 nm. Its tunability is 150 nm....

  1. Optimal design of tunable phononic bandgap plates under equibiaxial stretch

    International Nuclear Information System (INIS)

    Hedayatrasa, Saeid; Abhary, Kazem; Uddin, M S; Guest, James K

    2016-01-01

    Design and application of phononic crystal (PhCr) acoustic metamaterials has been a topic with tremendous growth of interest in the last decade due to their promising capabilities to manipulate acoustic and elastodynamic waves. Phononic controllability of waves through a particular PhCr is limited only to the spectrums located within its fixed bandgap frequency. Hence the ability to tune a PhCr is desired to add functionality over its variable bandgap frequency or for switchability. Deformation induced bandgap tunability of elastomeric PhCr solids and plates with prescribed topology have been studied by other researchers. Principally the internal stress state and distorted geometry of a deformed phononic crystal plate (PhP) changes its effective stiffness and leads to deformation induced tunability of resultant modal band structure. Thus the microstructural topology of a PhP can be altered so that specific tunability features are met through prescribed deformation. In the present study novel tunable PhPs of this kind with optimized bandgap efficiency-tunability of guided waves are computationally explored and evaluated. Low loss transmission of guided waves throughout thin walled structures makes them ideal for fabrication of low loss ultrasound devices and structural health monitoring purposes. Various tunability targets are defined to enhance or degrade complete bandgaps of plate waves through macroscopic tensile deformation. Elastomeric hyperelastic material is considered which enables recoverable micromechanical deformation under tuning finite stretch. Phononic tunability through stable deformation of phononic lattice is specifically required and so any topology showing buckling instability under assumed deformation is disregarded. Nondominated sorting genetic algorithm (GA) NSGA-II is adopted for evolutionary multiobjective topology optimization of hypothesized tunable PhP with square symmetric unit-cell and relevant topologies are analyzed through finite

  2. Thermally controlled mid-IR band-gap engineering in all-glass chalcogenide microstructured fibers: a numerical study

    DEFF Research Database (Denmark)

    Barh, Ajanta; Varshney, Ravi K.; Pal, Bishnu P.

    2017-01-01

    Presence of photonic band-gap (PBG) in an all-glass low refractive index (RI) contrast chalcogenide (Ch) microstructured optical fibers (MOFs) is investigated numerically. The effect of external temperature on the position of band-gap is explored to realize potential fiber-based wavelength filters....... Then the temperature sensitivity of band-gaps is investigated to design fiber-based mid-IR wavelength filters/sensors....

  3. Modeling and fabrication of 4H-SiC Schottky junction

    Science.gov (United States)

    Martychowiec, A.; Pedryc, A.; Kociubiński, A.

    2017-08-01

    The rapidly growing demand for electronic devices requires using of alternative semiconductor materials, which could replace conventional silicon. Silicon carbide has been proposed for these harsh environment applications (high temperature, high voltage, high power conditions) because of its wide bandgap, its high temperature operation ability, its excellent thermal and chemical stability, and its high breakdown electric field strength. The Schottky barrier diode (SBD) is known as one of the best refined SiC devices. This paper presents prepared model, simulations and description of technology of 4H-SiC Schottky junction as well as characterization of fabricated structures. The future aim of the application of the structures is an optical detection of an ultraviolet radiation. The model section contains a comparison of two different solutions of SBD's construction. Simulations - as a crucial process of designing electronic devices - have been performed using the ATLAS device of Silvaco TCAD software. As a final result the paper shows I-V characteristics of fabricated diodes.

  4. Passive band-gap reconfiguration born from bifurcation asymmetry.

    Science.gov (United States)

    Bernard, Brian P; Mann, Brian P

    2013-11-01

    Current periodic structures are constrained to have fixed energy transmission behavior unless active control or component replacement is used to alter their wave propagation characteristics. The introduction of nonlinearity to generate multiple stable equilibria is an alternative strategy for realizing distinct energy propagation behaviors. We investigate the creation of a reconfigurable band-gap system by implementing passive switching between multiple stable states of equilibrium, to alter the level of energy attenuation in response to environmental stimuli. The ability to avoid potentially catastrophic loads is demonstrated by tailoring the bandpass and band-gap regions to coalesce for two stable equilibria and varying an external load parameter to trigger a bifurcation. The proposed phenomenon could be utilized in remote or autonomous applications where component modifications and active control are impractical.

  5. Tuning the hybridization bandgap by meta-molecules with in-unit interaction

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Yongqiang; Li, Yunhui, E-mail: liyunhui@tongji.edu.cn; Wu, Qian; Jiang, Haitao; Zhang, Yewen; Chen, Hong [Key Laboratory of Advanced Micro-Structured Materials, Ministry of Education, School of Physics Science and Engineering, Tongji University, Shanghai 200092 (China)

    2015-09-07

    In this paper, we demonstrate that the hybridization bandgap (HBG) can be tuned conveniently by deep subwavelength meta-molecules with in-unit interaction. Spontaneous-emission-cancellation-like (SEC-like) effect is realized in a meta-molecule by introducing the destructive interference of two detuned meta-atoms. The meta-atoms consisting of subwavelength zero-index-metamaterial-based resonators are side-coupled to a microstrip. Compared to conventional HBG configurations, the presence of in-unit interaction between meta-atoms provides more flexibility in tuning the bandgap properties, keeping the device volume almost unchanged. Both numerical simulations and microwave experiments confirm that the width, depth, and spectrum shape of HBG can be tuned by simply introducing SEC-like interaction into the meta-molecule. Due to these features, our design may be promising to be applied in microwave or optics communications systems with strict limitation of device volume and flexible bandgap properties.

  6. GaSb solar cells grown on GaAs via interfacial misfit arrays for use in the III-Sb multi-junction cell

    Science.gov (United States)

    Nelson, George T.; Juang, Bor-Chau; Slocum, Michael A.; Bittner, Zachary S.; Laghumavarapu, Ramesh B.; Huffaker, Diana L.; Hubbard, Seth M.

    2017-12-01

    Growth of GaSb with low threading dislocation density directly on GaAs may be possible with the strategic strain relaxation of interfacial misfit arrays. This creates an opportunity for a multi-junction solar cell with access to a wide range of well-developed direct bandgap materials. Multi-junction cells with a single layer of GaSb/GaAs interfacial misfit arrays could achieve higher efficiency than state-of-the-art inverted metamorphic multi-junction cells while forgoing the need for costly compositionally graded buffer layers. To develop this technology, GaSb single junction cells were grown via molecular beam epitaxy on both GaSb and GaAs substrates to compare homoepitaxial and heteroepitaxial GaSb device results. The GaSb-on-GaSb cell had an AM1.5g efficiency of 5.5% and a 44-sun AM1.5d efficiency of 8.9%. The GaSb-on-GaAs cell was 1.0% efficient under AM1.5g and 4.5% at 44 suns. The lower performance of the heteroepitaxial cell was due to low minority carrier Shockley-Read-Hall lifetimes and bulk shunting caused by defects related to the mismatched growth. A physics-based device simulator was used to create an inverted triple-junction GaInP/GaAs/GaSb model. The model predicted that, with current GaSb-on-GaAs material quality, the not-current-matched, proof-of-concept cell would provide 0.5% absolute efficiency gain over a tandem GaInP/GaAs cell at 1 sun and 2.5% gain at 44 suns, indicating that the effectiveness of the GaSb junction was a function of concentration.

  7. Simultaneous high crystallinity and sub-bandgap optical absorptance in hyperdoped black silicon using nanosecond laser annealing

    Energy Technology Data Exchange (ETDEWEB)

    Franta, Benjamin, E-mail: bafranta@gmail.com; Pastor, David; Gandhi, Hemi H.; Aziz, Michael J.; Mazur, Eric [School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138 (United States); Rekemeyer, Paul H.; Gradečak, Silvija [Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States)

    2015-12-14

    Hyperdoped black silicon fabricated with femtosecond laser irradiation has attracted interest for applications in infrared photodetectors and intermediate band photovoltaics due to its sub-bandgap optical absorptance and light-trapping surface. However, hyperdoped black silicon typically has an amorphous and polyphasic polycrystalline surface that can interfere with carrier transport, electrical rectification, and intermediate band formation. Past studies have used thermal annealing to obtain high crystallinity in hyperdoped black silicon, but thermal annealing causes a deactivation of the sub-bandgap optical absorptance. In this study, nanosecond laser annealing is used to obtain high crystallinity and remove pressure-induced phases in hyperdoped black silicon while maintaining high sub-bandgap optical absorptance and a light-trapping surface morphology. Furthermore, it is shown that nanosecond laser annealing reactivates the sub-bandgap optical absorptance of hyperdoped black silicon after deactivation by thermal annealing. Thermal annealing and nanosecond laser annealing can be combined in sequence to fabricate hyperdoped black silicon that simultaneously shows high crystallinity, high above-bandgap and sub-bandgap absorptance, and a rectifying electrical homojunction. Such nanosecond laser annealing could potentially be applied to non-equilibrium material systems beyond hyperdoped black silicon.

  8. Optimal design of lossy bandgap structures

    DEFF Research Database (Denmark)

    Jensen, Jakob Søndergaard

    2004-01-01

    The method of topology optimization is used to design structures for wave propagation with one lossy material component. Optimized designs for scalar elastic waves are presented for mininimum wave transmission as well as for maximum wave energy dissipation. The structures that are obtained...... are of the 1D or 2D bandgap type depending on the objective and the material parameters....

  9. Research and development of super light water reactors and super fast reactors in Japan

    International Nuclear Information System (INIS)

    Oka, Y.; Morooka, S.; Yamakawa, M.; Ishiwatari, Y.; Ikejiri, S.; Katsumura, Y.; Muroya, Y.; Terai, T.; Sasaki, K.; Mori, H.; Hamamoto, Y.; Okumura, K.; Kugo, T.; Nakatsuka, T.; Ezato, K.; Akasaka, N.; Hotta, A.

    2011-01-01

    Super Light Water Reactors (Super LWR) and Super Fast Reactors (Super FR) are the supercritical- pressure light water cooled reactors (SCWR) that are developed by the research group of University of Tokyo since 1989 and now jointly under development with the researchers of Waseda University, University of Tokyo and other organizations in Japan. The principle of the reactor concept development, the results of the past Super LWR and Super FR R&D as well as the R&D program of the Super FR second phase project are described. (author)

  10. The super W∞ symmetry of the Manin-Radul super KP hierarchy

    International Nuclear Information System (INIS)

    Das, A.; Sin, S.J.

    1991-11-01

    We show that the Manin-Radul super KP hierarchy is invariant under super W ∞ transformations. These transformations are characterized by time dependent flows which commute with the usual flows generated by the conserved quantities of the super KP hierarchy. (author). 16 refs

  11. Tight junction-associated MARVEL proteins marveld3, tricellulin, and occludin have distinct but overlapping functions.

    Science.gov (United States)

    Raleigh, David R; Marchiando, Amanda M; Zhang, Yong; Shen, Le; Sasaki, Hiroyuki; Wang, Yingmin; Long, Manyuan; Turner, Jerrold R

    2010-04-01

    In vitro studies have demonstrated that occludin and tricellulin are important for tight junction barrier function, but in vivo data suggest that loss of these proteins can be overcome. The presence of a heretofore unknown, yet related, protein could explain these observations. Here, we report marvelD3, a novel tight junction protein that, like occludin and tricellulin, contains a conserved four-transmembrane MARVEL (MAL and related proteins for vesicle trafficking and membrane link) domain. Phylogenetic tree reconstruction; analysis of RNA and protein tissue distribution; immunofluorescent and electron microscopic examination of subcellular localization; characterization of intracellular trafficking, protein interactions, dynamic behavior, and siRNA knockdown effects; and description of remodeling after in vivo immune activation show that marvelD3, occludin, and tricellulin have distinct but overlapping functions at the tight junction. Although marvelD3 is able to partially compensate for occludin or tricellulin loss, it cannot fully restore function. We conclude that marvelD3, occludin, and tricellulin define the tight junction-associated MARVEL protein family. The data further suggest that these proteins are best considered as a group with both redundant and unique contributions to epithelial function and tight junction regulation.

  12. Bandgap engineering of lead-free double perovskite Cs{sub 2}AgBiBr{sub 6} through trivalent metal alloying

    Energy Technology Data Exchange (ETDEWEB)

    Du, Ke-zhao; Mitzi, David B. [Department of Mechanical Engineering and Materials Science, and Department of Chemistry, Duke University, Durham, NC (United States); Meng, Weiwei; Wang, Xiaoming; Yan, Yanfa [Department of Physics and Astronomy and Wright Center for Photovoltaics Innovation and Commercialization, The University of Toledo, OH (United States)

    2017-07-03

    The double perovskite family, A{sub 2}M{sup I}M{sup III}X{sub 6}, is a promising route to overcome the lead toxicity issue confronting the current photovoltaic (PV) standout, CH{sub 3}NH{sub 3}PbI{sub 3}. Given the generally large indirect band gap within most known double perovskites, band-gap engineering provides an important approach for targeting outstanding PV performance within this family. Using Cs{sub 2}AgBiBr{sub 6} as host, band-gap engineering through alloying of In{sup III}/Sb{sup III} has been demonstrated in the current work. Cs{sub 2}Ag(Bi{sub 1-x}M{sub x})Br{sub 6} (M=In, Sb) accommodates up to 75 % In{sup III} with increased band gap, and up to 37.5 % Sb{sup III} with reduced band gap; that is, enabling ca. 0.41 eV band gap modulation through introduction of the two metals, with smallest value of 1.86 eV for Cs{sub 2}Ag(Bi{sub 0.625}Sb{sub 0.375})Br{sub 6}. Band structure calculations indicate that opposite band gap shift directions associated with Sb/In substitution arise from different atomic configurations for these atoms. Associated photoluminescence and environmental stability of the three-metal systems are also assessed. (copyright 2017 Wiley-VCH Verlag GmbH and Co. KGaA, Weinheim)

  13. Linker-dependent Junction Formation Probability in Single-Molecule Junctions

    Energy Technology Data Exchange (ETDEWEB)

    Yoo, Pil Sun; Kim, Taekyeong [HankukUniversity of Foreign Studies, Yongin (Korea, Republic of)

    2015-01-15

    We compare the junction formation probabilities of single-molecule junctions with different linker molecules by using a scanning tunneling microscope-based break-junction technique. We found that the junction formation probability varies as SH > SMe > NH2 for the benzene backbone molecule with different types of anchoring groups, through quantitative statistical analysis. These results are attributed to different bonding forces according to the linker groups formed with Au atoms in the electrodes, which is consistent with previous works. Our work allows a better understanding of the contact chemistry in the metal.molecule junction for future molecular electronic devices.

  14. Emergence of an enslaved phononic bandgap in a non-equilibrium pseudo-crystal

    Science.gov (United States)

    Bachelard, Nicolas; Ropp, Chad; Dubois, Marc; Zhao, Rongkuo; Wang, Yuan; Zhang, Xiang

    2017-08-01

    Material systems that reside far from thermodynamic equilibrium have the potential to exhibit dynamic properties and behaviours resembling those of living organisms. Here we realize a non-equilibrium material characterized by a bandgap whose edge is enslaved to the wavelength of an external coherent drive. The structure dynamically self-assembles into an unconventional pseudo-crystal geometry that equally distributes momentum across elements. The emergent bandgap is bestowed with lifelike properties, such as the ability to self-heal to perturbations and adapt to sudden changes in the drive. We derive an exact analytical solution for both the spatial organization and the bandgap features, revealing the mechanism for enslavement. This work presents a framework for conceiving lifelike non-equilibrium materials and emphasizes the potential for the dynamic imprinting of material properties through external degrees of freedom.

  15. Emergence of an enslaved phononic bandgap in a non-equilibrium pseudo-crystal.

    Science.gov (United States)

    Bachelard, Nicolas; Ropp, Chad; Dubois, Marc; Zhao, Rongkuo; Wang, Yuan; Zhang, Xiang

    2017-08-01

    Material systems that reside far from thermodynamic equilibrium have the potential to exhibit dynamic properties and behaviours resembling those of living organisms. Here we realize a non-equilibrium material characterized by a bandgap whose edge is enslaved to the wavelength of an external coherent drive. The structure dynamically self-assembles into an unconventional pseudo-crystal geometry that equally distributes momentum across elements. The emergent bandgap is bestowed with lifelike properties, such as the ability to self-heal to perturbations and adapt to sudden changes in the drive. We derive an exact analytical solution for both the spatial organization and the bandgap features, revealing the mechanism for enslavement. This work presents a framework for conceiving lifelike non-equilibrium materials and emphasizes the potential for the dynamic imprinting of material properties through external degrees of freedom.

  16. Stability and bandgaps of layered perovskites for one- and two-photon water splitting

    DEFF Research Database (Denmark)

    Castelli, Ivano Eligio; García Lastra, Juan Maria; Hüser, Falco

    2013-01-01

    in the Ruddlesden–Popper phase of the layered perovskite structure. Based on screening criteria for the stability, bandgaps and band edge positions, we suggest 20 new materials for the light harvesting photo-electrode of a one-photon water splitting device and 5 anode materials for a two-photon device with silicon...... as photo-cathode. In addition, we explore a simple rule relating the bandgap of the perovskite to the number of octahedra in the layered structure and the B-metal ion. Finally, the quality of the GLLB-SC potential used to obtain the bandgaps, including the derivative discontinuity, is validated against G0W......0@LDA gaps for 20 previously identified oxides and oxynitrides in the cubic perovskite structure....

  17. A two isocenter IMRT technique with a controlled junction dose for long volume targets

    International Nuclear Information System (INIS)

    Zeng, G G; Heaton, R K; Catton, C N; Chung, P W; O'Sullivan, B; Lau, M; Parent, A; Jaffray, D A

    2007-01-01

    Most IMRT techniques have been designed to treat targets smaller than the field size of conventional linac accelerators. In order to overcome the field size restrictions in applying IMRT, we developed a two isocenter IMRT technique to treat long volume targets. The technique exploits an extended dose gradient throughout a junction region of 4-6 cm to minimize the impact of field match errors on a junction dose and manipulates the inverse planning and IMRT segments to fill in the dose gradient and achieve dose uniformity. Techniques for abutting both conventional fields with IMRT ('Static + IMRT') and IMRT fields ('IMRT + IMRT') using two separate isocenters have been developed. Five long volume sarcoma cases have been planned in Pinnacle (Philips, Madison, USA) using Elekta Synergy and Varian 2100EX linacs; two of the cases were clinically treated with this technique. Advantages were demonstrated with well-controlled junction target uniformity and tolerance to setup uncertainties. The junction target dose heterogeneity was controlled at a level of ±5%; for 3 mm setup errors at the field edges, the junction target dose changed less than 5% and the dose sparing to organs at risk (OARs) was maintained. Film measurements confirmed the treatment planning results

  18. Reduction of 4-dim self dual super Yang-Mills onto super Riemann surfaces

    International Nuclear Information System (INIS)

    Mendoza, A.; Restuccia, A.; Martin, I.

    1990-05-01

    Recently self dual super Yang-Mills over a super Riemann surface was obtained as the zero set of a moment map on the space of superconnections to the dual of the super Lie algebra of gauge transformations. We present a new formulation of 4-dim Euclidean self dual super Yang-Mills in terms of constraints on the supercurvature. By dimensional reduction we obtain the same set of superconformal field equations which define self dual connections on a super Riemann surface. (author). 10 refs

  19. Calculus super review

    CERN Document Server

    2012-01-01

    Get all you need to know with Super Reviews! Each Super Review is packed with in-depth, student-friendly topic reviews that fully explain everything about the subject. The Calculus I Super Review includes a review of functions, limits, basic derivatives, the definite integral, combinations, and permutations. Take the Super Review quizzes to see how much you've learned - and where you need more study. Makes an excellent study aid and textbook companion. Great for self-study!DETAILS- From cover to cover, each in-depth topic review is easy-to-follow and easy-to-grasp - Perfect when preparing for

  20. Super-Planckian far-field radiative heat transfer

    Science.gov (United States)

    Fernández-Hurtado, V.; Fernández-Domínguez, A. I.; Feist, J.; García-Vidal, F. J.; Cuevas, J. C.

    2018-01-01

    We present here a theoretical analysis that demonstrates that the far-field radiative heat transfer between objects with dimensions smaller than the thermal wavelength can overcome the Planckian limit by orders of magnitude. To guide the search for super-Planckian far-field radiative heat transfer, we make use of the theory of fluctuational electrodynamics and derive a relation between the far-field radiative heat transfer and the directional absorption efficiency of the objects involved. Guided by this relation, and making use of state-of-the-art numerical simulations, we show that the far-field radiative heat transfer between highly anisotropic objects can largely overcome the black-body limit when some of their dimensions are smaller than the thermal wavelength. In particular, we illustrate this phenomenon in the case of suspended pads made of polar dielectrics like SiN or SiO2. These structures are widely used to measure the thermal transport through nanowires and low-dimensional systems and can be employed to test our predictions. Our work illustrates the dramatic failure of the classical theory to predict the far-field radiative heat transfer between micro- and nanodevices.

  1. Technological development for super-high efficiency solar cells. Survey on the commercialization on analysis; Chokokoritsu taiyo denchi no gijutsu kaihatsu. Jitsuyoka kaiseki ni kansuru chosa kenkyu

    Energy Technology Data Exchange (ETDEWEB)

    Tatsuta, M [New Energy and Industrial Technology Development Organization, Tokyo (Japan)

    1994-12-01

    This paper reports the survey results on analysis of super-high efficiency solar cells for practical use in fiscal 1994. (1) On the survey on crystalline compound solar cells, it was pointed out that the present study target is III-V compound semiconductor solar cell, and efficiencies of 36-39% are theoretically expected by use of two-junction cells. (2) On structure of super-high efficiency solar cells of 40%, selection of upper and lower cell materials for multi-junction cells, high-efficiency tandem Si solar cells, and the merit and possibility of light collection operation were surveyed, and their issues were discussed. (3) On physical properties of mixed crystalline semiconductors and characteristic evaluation of solar cells, impurities, trap center, minority carrier life, and applicability of supper lattice structure to high-efficiency solar cells were surveyed. (4) On fabrication technology of compound semiconductor solar cells, various problems of and approaches to electrode formation and antireflection film technologies, the meaning and issues of thin film substrate technology and continuous process, trial calculation of costs, safety, and resource problem were surveyed.

  2. Bandgap tunability at single-layer molybdenum disulphide grain boundaries

    KAUST Repository

    Huang, Yu Li; Chen, Yifeng; Zhang, Wenjing; Quek, Su Ying; Chen, Chang-Hsiao; Li, Lain-Jong; Hsu, Wei-Ting; Chang, Wen-Hao; Zheng, Yu Jie; Chen, Wei; Wee, Andrew T. S.

    2015-01-01

    represents a prototype two-dimensional transition metal dichalcogenide, has an electronic bandgap that increases with decreasing layer thickness. Using high-resolution scanning tunnelling microscopy and spectroscopy, we measure the apparent quasiparticle

  3. Effects of corrugation shape on frequency band-gaps for longitudinal wave motion in a periodic elastic layer

    DEFF Research Database (Denmark)

    Sorokin, Vladislav

    2016-01-01

    The paper concerns determining frequency band-gaps for longitudinal wave motion in a periodic waveguide. The waveguide may be considered either as an elastic layer with variable thickness or as a rod with variable cross section. As a result, widths and locations of all frequency band-gaps are det......The paper concerns determining frequency band-gaps for longitudinal wave motion in a periodic waveguide. The waveguide may be considered either as an elastic layer with variable thickness or as a rod with variable cross section. As a result, widths and locations of all frequency band......, harmonic in the corrugation series. The revealed insights into the mechanism of band-gap formation can be used to predict locations and widths of all frequency band-gaps featured by any corrugation shape. These insights are general and can be valid also for other types of wave motion in periodic structures...

  4. Two-dimensional Kagome photonic bandgap waveguide

    DEFF Research Database (Denmark)

    Nielsen, Jens Bo; Søndergaard, Thomas; Libori, Stig E. Barkou

    2000-01-01

    The transverse-magnetic photonic-bandgap-guidance properties are investigated for a planar two-dimensional (2-D) Kagome waveguide configuration using a full-vectorial plane-wave-expansion method. Single-moded well-localized low-index guided modes are found. The localization of the optical modes...... is investigated with respect to the width of the 2-D Kagome waveguide, and the number of modes existing for specific frequencies and waveguide widths is mapped out....

  5. Supermanifolds and super Riemann surfaces

    International Nuclear Information System (INIS)

    Rabin, J.M.

    1986-09-01

    The theory of super Riemann surfaces is rigorously developed using Rogers' theory of supermanifolds. The global structures of super Teichmueller space and super moduli space are determined. The super modular group is shown to be precisely the ordinary modular group. Super moduli space is shown to be the gauge-fixing slice for the fermionic string path integral

  6. Structure and optical bandgap relationship of π-conjugated systems.

    Directory of Open Access Journals (Sweden)

    André Leitão Botelho

    Full Text Available In bulk heterojunction photovoltaic systems both the open-circuit voltage as well as the short-circuit current, and hence the power conversion efficiency, are dependent on the optical bandgap of the electron-donor material. While first-principles methods are computationally intensive, simpler model Hamiltonian approaches typically suffer from one or more flaws: inability to optimize the geometries for their own input; absence of general, transferable parameters; and poor performance for non-planar systems. We introduce a set of new and revised parameters for the adapted Su-Schrieffer-Heeger (aSSH Hamiltonian, which is capable of optimizing geometries, along with rules for applying them to any [Formula: see text]-conjugated system containing C, N, O, or S, including non-planar systems. The predicted optical bandgaps show excellent agreement to UV-vis spectroscopy data points from literature, with a coefficient of determination [Formula: see text], a mean error of -0.05 eV, and a mean absolute deviation of 0.16 eV. We use the model to gain insights from PEDOT, fused thiophene polymers, poly-isothianaphthene, copolymers, and pentacene as sources of design rules in the search for low bandgap materials. Using the model as an in-silico design tool, a copolymer of benzodithiophenes along with a small-molecule derivative of pentacene are proposed as optimal donor materials for organic photovoltaics.

  7. Monolithic all-PM femtosecond Yb-doped fiber laser using photonic bandgap fibers

    DEFF Research Database (Denmark)

    Liu, Xiaomin; Lægsgaard, Jesper; Turchinovich, Dmitry

    2009-01-01

    We present a monolithic Yb fiber laser, dispersion managed by an all-solid photonic bandgap fiber, and pulse compressed in a hollow-core photonic crystal fiber. The laser delivers 9 nJ, 275-fs long pulses at 1035 nm.......We present a monolithic Yb fiber laser, dispersion managed by an all-solid photonic bandgap fiber, and pulse compressed in a hollow-core photonic crystal fiber. The laser delivers 9 nJ, 275-fs long pulses at 1035 nm....

  8. First principle analyses of direct bandgap solar cells with absorbing substrates versus mirrors

    Energy Technology Data Exchange (ETDEWEB)

    Kirk, Alexander P. [School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, Arizona 85287 (United States); Kirk, Wiley P. [Department of Materials Science and Engineering, University of Texas at Arlington, Arlington, Texas 76019 (United States)

    2013-11-07

    Direct bandgap InP, GaAs, CdTe, and Ga{sub 0.5}In{sub 0.5}P solar cells containing backside mirrors as well as parasitically absorbing substrates are analyzed for their limiting open circuit voltage and power conversion efficiency with comparison to record solar cells. From the principle of detailed balance, it is shown quantitatively that mirror solar cells have greater voltage and power conversion efficiency than their substrate counterparts. Next, the radiative recombination coefficient and maximum radiative lifetime of GaAs mirror and substrate solar cells are calculated and compared to the nonradiative Auger and Shockley-Read-Hall (SRH) lifetimes. Mirror solar cells have greater radiative lifetime than their substrate variants. Auger lifetime exceeds radiative lifetime for both substrate and mirror cells while SRH lifetime may be less or greater than radiative lifetime depending on trap concentration and capture cross section. Finally, the change in free energy of the photogenerated carriers is analyzed in a comparison between InP, GaAs, CdTe, and Ga{sub 0.5}In{sub 0.5}P mirror and substrate solar cells in order to characterize the relationship between solar photon quality and free energy management in solar cells with differing bandgaps. Wider bandgap visible threshold Ga{sub 0.5}In{sub 0.5}P solar cells make better use of the available change in free energy of the photogenerated charge carriers, even when normalized to the bandgap energy, than narrower bandgap near-IR threshold InP, GaAs, and CdTe solar cells.

  9. Design of photonic bandgap fibers by topology optimization

    DEFF Research Database (Denmark)

    Dühring, Maria Bayard; Sigmund, Ole; Feurer, Thomas

    2010-01-01

    A method based on topology optimization is presented to design the cross section of hollow-core photonic bandgap fibers for minimizing energy loss by material absorption. The optical problem is modeled by the timeharmonic wave equation and solved with the finite element program Comsol Multiphysics...

  10. Bandgap tuning with thermal residual stresses induced in a quantum dot.

    Science.gov (United States)

    Kong, Eui-Hyun; Joo, Soo-Hyun; Park, Hyun-Jin; Song, Seungwoo; Chang, Yong-June; Kim, Hyoung Seop; Jang, Hyun Myung

    2014-09-24

    Lattice distortion induced by residual stresses can alter electronic and mechanical properties of materials significantly. Herein, a novel way of the bandgap tuning in a quantum dot (QD) by lattice distortion is presented using 4-nm-sized CdS QDs grown on a TiO2 particle as an application example. The bandgap tuning (from 2.74 eV to 2.49 eV) of a CdS QD is achieved by suitably adjusting the degree of lattice distortion in a QD via the tensile residual stresses which arise from the difference in thermal expansion coefficients between CdS and TiO2. The idea of bandgap tuning is then applied to QD-sensitized solar cells, achieving ≈60% increase in the power conversion efficiency by controlling the degree of thermal residual stress. Since the present methodology is not limited to a specific QD system, it will potentially pave a way to unexplored quantum effects in various QD-based applications. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  11. Relation between bandgap and resistance drift in amorphous phase change materials.

    Science.gov (United States)

    Rütten, Martin; Kaes, Matthias; Albert, Andreas; Wuttig, Matthias; Salinga, Martin

    2015-12-01

    Memory based on phase change materials is currently the most promising candidate for bridging the gap in access time between memory and storage in traditional memory hierarchy. However, multilevel storage is still hindered by the so-called resistance drift commonly related to structural relaxation of the amorphous phase. Here, we present the temporal evolution of infrared spectra measured on amorphous thin films of the three phase change materials Ag4In3Sb67Te26, GeTe and the most popular Ge2Sb2Te5. A widening of the bandgap upon annealing accompanied by a decrease of the optical dielectric constant ε∞ is observed for all three materials. Quantitative comparison with experimental data for the apparent activation energy of conduction reveals that the temporal evolution of bandgap and activation energy can be decoupled. The case of Ag4In3Sb67Te26, where the increase of activation energy is significantly smaller than the bandgap widening, demonstrates the possibility to identify new phase change materials with reduced resistance drift.

  12. Electron transport and noise spectroscopy in organic magnetic tunnel junctions with PTCDA and Alq3 barriers

    Science.gov (United States)

    Martinez, Isidoro; Cascales, Juan Pedro; Hong, Jhen-Yong; Lin, Minn-Tsong; Prezioso, Mirko; Riminucci, Alberto; Dediu, Valentin A.; Aliev, Farkhad G.

    2016-10-01

    The possible influence of internal barrier dynamics on spin, charge transport and their fluctuations in organic spintronics remains poorly understood. Here we present investigation of the electron transport and low frequency noise at temperatures down to 0.3K in magnetic tunnel junctions with an organic PTCDA barriers with thickness up to 5 nm in the tunneling regime and with 200 nm thick Alq3 barrier in the hopping regime. We observed high tunneling magneto-resistance at low temperatures (15-40%) and spin dependent super-poissonian shot noise in organic magnetic tunnel junctions (OMTJs) with PTCDA. The Fano factor exceeds 1.5-2 values which could be caused by interfacial states controlled by spin dependent bunching in the tunneling events through the molecules.1 The bias dependence of the low frequency noise in OMTJs with PTCDA barriers which includes both 1/f and random telegraph noise activated at specific biases will also be discussed. On the other hand, the organic junctions with ferromagnetic electrodes and thick Alq3 barriers present sub-poissonian shot noise which depends on the temperature, indicative of variable range hopping.

  13. Deterministic phase measurements exhibiting super-sensitivity and super-resolution

    DEFF Research Database (Denmark)

    Schäfermeier, Clemens; Ježek, Miroslav; Madsen, Lars S.

    2018-01-01

    Phase super-sensitivity is obtained when the sensitivity in a phase measurement goes beyond the quantum shot noise limit, whereas super-resolution is obtained when the interference fringes in an interferometer are narrower than half the input wavelength. Here we show experimentally that these two...

  14. Design for maximum band-gaps in beam structures

    DEFF Research Database (Denmark)

    Olhoff, Niels; Niu, Bin; Cheng, Gengdong

    2012-01-01

    This paper aims to extend earlier optimum design results for transversely vibrating Bernoulli-Euler beams by determining new optimum band-gap beam structures for (i) different combinations of classical boundary conditions, (ii) much larger values of the orders n and n-1 of adjacent upper and lower...

  15. Quasiperiodic one-dimensional photonic crystals with adjustable multiple photonic bandgaps.

    Science.gov (United States)

    Vyunishev, Andrey M; Pankin, Pavel S; Svyakhovskiy, Sergey E; Timofeev, Ivan V; Vetrov, Stepan Ya

    2017-09-15

    We propose an elegant approach to produce photonic bandgap (PBG) structures with multiple photonic bandgaps by constructing quasiperiodic photonic crystals (QPPCs) composed of a superposition of photonic lattices with different periods. Generally, QPPC structures exhibit both aperiodicity and multiple PBGs due to their long-range order. They are described by a simple analytical expression, instead of quasiperiodic tiling approaches based on substitution rules. Here we describe the optical properties of QPPCs exhibiting two PBGs that can be tuned independently. PBG interband spacing and its depth can be varied by choosing appropriate reciprocal lattice vectors and their amplitudes. These effects are confirmed by the proof-of-concept measurements made for the porous silicon-based QPPC of the appropriate design.

  16. Electronic structure characterization and bandgap engineeringofsolar hydrogen materials

    Energy Technology Data Exchange (ETDEWEB)

    Guo, Jinghua

    2007-11-01

    Bandgap, band edge positions as well as the overall band structure of semiconductors are of crucial importance in photoelectrochemical and photocatalytic applications. The energy position of the band edge level can be controlled by the electronegativity of the dopants, the pH of the solution (flatband potential variation of 60 mV per pH unit), as well as by quantum confinement effects. Accordingly, band edges and bandgap can be tailored to achieve specific electronic, optical or photocatalytic properties. Synchrotron radiation with photon energy at or below 1 keV is giving new insight into such areas as condensed matter physics and extreme ultraviolet optics technology. In the soft x-ray region, the question tends to be, what are the electrons doing as they migrated between the atoms. In this paper, I will present a number of soft x-ray spectroscopic study of nanostructured 3d metal compounds Fe{sub 2}O{sub 3} and ZnO.

  17. Intermetallic bonds and midgap interface states at epitaxial Al/GaAs(001) junctions

    International Nuclear Information System (INIS)

    Maxisch, T.; Baldereschi, A.; Binggeli, N.

    2003-03-01

    Using first-principles pseudopotential calculations, we have investigated the nature of the electronic states with energies within the semiconductor bandgap of abrupt, defect-free As-terminated Al/GaAs(001) junctions. While bonding-/antibonding-like semiconductor evanescent states occur near the valence-/conduction-band edges, the semiconductor midgap region is characterized by a new type of electronic states, not accounted for by commonly accepted models. These states, which correspond to intermetallic bonds between the outermost Ga cations of the semiconductor and Al atoms of the metal, occur near the Fermi energy. They are localized at the interface and are located around the J-point of the Brillouin zone. These new interface states derive from an interaction between localized states of the Al(001) surface and bulk GaAs conduction band states, mediated by localized states of the unreconstructed As-terminated GaAs(001) surface. (author)

  18. Direct bandgap silicon: tensile-strained silicon nanocrystals

    Czech Academy of Sciences Publication Activity Database

    Kůsová, Kateřina; Hapala, Prokop; Valenta, J.; Jelínek, Pavel; Cibulka, Ondřej; Ondič, Lukáš; Pelant, Ivan

    2014-01-01

    Roč. 1, č. 2 (2014), "1300042-1"-"1300042-9" ISSN 2196-7350 R&D Projects: GA ČR(CZ) GBP108/12/G108; GA ČR GPP204/12/P235; GA ČR GAP204/10/0952 Institutional support: RVO:68378271 Keywords : silicon nanocrystals * badstructure * light emission * direct bandgap * surface capping Subject RIV: BM - Solid Matter Physics ; Magnetism

  19. Gap Junctions

    Science.gov (United States)

    Nielsen, Morten Schak; Axelsen, Lene Nygaard; Sorgen, Paul L.; Verma, Vandana; Delmar, Mario; Holstein-Rathlou, Niels-Henrik

    2013-01-01

    Gap junctions are essential to the function of multicellular animals, which require a high degree of coordination between cells. In vertebrates, gap junctions comprise connexins and currently 21 connexins are known in humans. The functions of gap junctions are highly diverse and include exchange of metabolites and electrical signals between cells, as well as functions, which are apparently unrelated to intercellular communication. Given the diversity of gap junction physiology, regulation of gap junction activity is complex. The structure of the various connexins is known to some extent; and structural rearrangements and intramolecular interactions are important for regulation of channel function. Intercellular coupling is further regulated by the number and activity of channels present in gap junctional plaques. The number of connexins in cell-cell channels is regulated by controlling transcription, translation, trafficking, and degradation; and all of these processes are under strict control. Once in the membrane, channel activity is determined by the conductive properties of the connexin involved, which can be regulated by voltage and chemical gating, as well as a large number of posttranslational modifications. The aim of the present article is to review our current knowledge on the structure, regulation, function, and pharmacology of gap junctions. This will be supported by examples of how different connexins and their regulation act in concert to achieve appropriate physiological control, and how disturbances of connexin function can lead to disease. © 2012 American Physiological Society. Compr Physiol 2:1981-2035, 2012. PMID:23723031

  20. Advances in wide bandgap SiC for optoelectronics

    DEFF Research Database (Denmark)

    Ou, Haiyan; Ou, Yiyu; Argyraki, Aikaterini

    2014-01-01

    Silicon carbide (SiC) has played a key role in power electronics thanks to its unique physical properties like wide bandgap, high breakdown field, etc. During the past decade, SiC is also becoming more and more active in optoelectronics thanks to the progress in materials growth and nanofabrication...

  1. Analysis of optical band-gap shift in impurity doped ZnO thin films by using nonparabolic conduction band parameters

    International Nuclear Information System (INIS)

    Kim, Won Mok; Kim, Jin Soo; Jeong, Jeung-hyun; Park, Jong-Keuk; Baik, Young-Jun; Seong, Tae-Yeon

    2013-01-01

    Polycrystalline ZnO thin films both undoped and doped with various types of impurities, which covered the wide carrier concentration range of 10 16 –10 21 cm −3 , were prepared by magnetron sputtering, and their optical-band gaps were investigated. The experimentally measured optical band-gap shifts were analyzed by taking into account the carrier density dependent effective mass determined by the first-order nonparabolicity approximation. It was shown that the measured shifts in optical band-gaps in ZnO films doped with cationic dopants, which mainly perturb the conduction band, could be well represented by theoretical estimation in which the band-gap widening due to the band-filling effect and the band-gap renormalization due to the many-body effect derived for a weakly interacting electron-gas model were combined and the carrier density dependent effective mass was incorporated. - Highlights: ► Optical band-gaps of polycrystalline ZnO thin films were analyzed. ► Experimental carrier concentration range covered from 10 16 to 10 21 cm −3 . ► Nonparabolic conduction band parameters were used in theoretical analysis. ► The band-filling and the band-gap renormalization effects were considered. ► The measured optical band-gap shifts corresponded well with the calculated ones

  2. Operating modes of superconducting tunnel junction device

    Energy Technology Data Exchange (ETDEWEB)

    Maehata, Keisuke [Kyushu Univ., Fukuoka (Japan). Faculty of Engineering

    1998-07-01

    In the Electrotechnical Laboratory, an Nb type superconducting tunnel junction (STJ) device with 200 x 200 sq. micron in area and super high quality was manufactured. By using 55-fe source, response of this large area STJ to X-ray was measured. In this measurement, two action modes with different output wave height from front amplifier were observed. Then, in this study, current-voltage feature of the element in each action mode was analyzed to elucidate a mechanism to form such two action modes. The feature was analyzed by using first order approximate solution on cavity resonance mode of Sine-Gordon equation. From the analytical results, it could be supposed that direction and magnitude of effective magnetic field penetrating into jointed area changed by an induction current effect owing to impressing speed of the magnetic field, which brings two different current-voltage features to make possible to observe two action modes with different pulse wave height. (G.K.)

  3. Theory of super LIE groups

    International Nuclear Information System (INIS)

    Prakash, M.

    1985-01-01

    The theory of supergravity has attracted increasing attention in the recent years as a unified theory of elementary particle interactions. The superspace formulation of the theory is highly suggestive of an underlying geometrical structure of superspace. It also incorporates the beautifully geometrical general theory of relativity. It leads us to believe that a better understanding of its geometry would result in a better understanding of the theory itself, and furthermore, that the geometry of superspace would also have physical consequences. As a first step towards that goal, we develop here a theory of super Lie groups. These are groups that have the same relation to a super Lie algebra as Lie groups have to a Lie algebra. More precisely, a super Lie group is a super-manifold and a group such that the group operations are super-analytic. The super Lie algebra of a super Lie group is related to the local properties of the group near the identity. This work develops the algebraic and super-analytical tools necessary for our theory, including proofs of a set of existence and uniqueness theorems for a class of super-differential equations

  4. An introduction to optical super-resolution microscopy for the adventurous biologist

    Science.gov (United States)

    Vangindertael, J.; Camacho, R.; Sempels, W.; Mizuno, H.; Dedecker, P.; Janssen, K. P. F.

    2018-04-01

    Ever since the inception of light microscopy, the laws of physics have seemingly thwarted every attempt to visualize the processes of life at its most fundamental, sub-cellular, level. The diffraction limit has restricted our view to length scales well above 250 nm and in doing so, severely compromised our ability to gain true insights into many biological systems. Fortunately, continuous advancements in optics, electronics and mathematics have since provided the means to once again make physics work to our advantage. Even though some of the fundamental concepts enabling super-resolution light microscopy have been known for quite some time, practically feasible implementations have long remained elusive. It should therefore not come as a surprise that the 2014 Nobel Prize in Chemistry was awarded to the scientists who, each in their own way, contributed to transforming super-resolution microscopy from a technological tour de force to a staple of the biologist’s toolkit. By overcoming the diffraction barrier, light microscopy could once again be established as an indispensable tool in an age where the importance of understanding life at the molecular level cannot be overstated. This review strives to provide the aspiring life science researcher with an introduction to optical microscopy, starting from the fundamental concepts governing compound and fluorescent confocal microscopy to the current state-of-the-art of super-resolution microscopy techniques and their applications.

  5. III-V-on-silicon solar cells reaching 33% photoconversion efficiency in two-terminal configuration

    Science.gov (United States)

    Cariou, Romain; Benick, Jan; Feldmann, Frank; Höhn, Oliver; Hauser, Hubert; Beutel, Paul; Razek, Nasser; Wimplinger, Markus; Bläsi, Benedikt; Lackner, David; Hermle, Martin; Siefer, Gerald; Glunz, Stefan W.; Bett, Andreas W.; Dimroth, Frank

    2018-04-01

    Silicon dominates the photovoltaic industry but the conversion efficiency of silicon single-junction solar cells is intrinsically constrained to 29.4%, and practically limited to around 27%. It is possible to overcome this limit by combining silicon with high-bandgap materials, such as III-V semiconductors, in a multi-junction device. Significant challenges associated with this material combination have hindered the development of highly efficient III-V/Si solar cells. Here, we demonstrate a III-V/Si cell reaching similar performances to standard III-V/Ge triple-junction solar cells. This device is fabricated using wafer bonding to permanently join a GaInP/GaAs top cell with a silicon bottom cell. The key issues of III-V/Si interface recombination and silicon's weak absorption are addressed using poly-silicon/SiOx passivating contacts and a novel rear-side diffraction grating for the silicon bottom cell. With these combined features, we demonstrate a two-terminal GaInP/GaAs//Si solar cell reaching a 1-sun AM1.5G conversion efficiency of 33.3%.

  6. Algebra & trigonometry super review

    CERN Document Server

    2012-01-01

    Get all you need to know with Super Reviews! Each Super Review is packed with in-depth, student-friendly topic reviews that fully explain everything about the subject. The Algebra and Trigonometry Super Review includes sets and set operations, number systems and fundamental algebraic laws and operations, exponents and radicals, polynomials and rational expressions, equations, linear equations and systems of linear equations, inequalities, relations and functions, quadratic equations, equations of higher order, ratios, proportions, and variations. Take the Super Review quizzes to see how much y

  7. Melting in super-earths.

    Science.gov (United States)

    Stixrude, Lars

    2014-04-28

    We examine the possible extent of melting in rock-iron super-earths, focusing on those in the habitable zone. We consider the energetics of accretion and core formation, the timescale of cooling and its dependence on viscosity and partial melting, thermal regulation via the temperature dependence of viscosity, and the melting curves of rock and iron components at the ultra-high pressures characteristic of super-earths. We find that the efficiency of kinetic energy deposition during accretion increases with planetary mass; considering the likely role of giant impacts and core formation, we find that super-earths probably complete their accretionary phase in an entirely molten state. Considerations of thermal regulation lead us to propose model temperature profiles of super-earths that are controlled by silicate melting. We estimate melting curves of iron and rock components up to the extreme pressures characteristic of super-earth interiors based on existing experimental and ab initio results and scaling laws. We construct super-earth thermal models by solving the equations of mass conservation and hydrostatic equilibrium, together with equations of state of rock and iron components. We set the potential temperature at the core-mantle boundary and at the surface to the local silicate melting temperature. We find that ancient (∼4 Gyr) super-earths may be partially molten at the top and bottom of their mantles, and that mantle convection is sufficiently vigorous to sustain dynamo action over the whole range of super-earth masses.

  8. Complete low-frequency bandgap in a two-dimensional phononic crystal with spindle-shaped inclusions

    Science.gov (United States)

    Ting, Wang; Hui, Wang; Mei-Ping, Sheng; Qing-Hua, Qin

    2016-04-01

    A two-dimensional phononic crystal (PC) structure possessing a relatively low frequency range of complete bandgap is presented. The structure is composed of periodic spindle-shaped plumbum inclusions in a rubber matrix which forms a square lattice. The dispersion relation, transmission spectrum and displacement field are studied using the finite element method in conjunction with the Bloch theorem. Numerical results show that the present PC structure can achieve a large complete bandgap in a relatively low frequency range compared with two inclusions of different materials, which is useful in low-frequency noise and vibration control and can be designed as a low frequency acoustic filter and waveguides. Moreover, the transmission spectrum and effective mass are evaluated to validate the obtained band structure. It is interesting to see that within the band gap the effective mass becomes negative, resulting in an imaginary wave speed and wave exponential attenuation. Finally, sensitivity analysis of the effect of geometrical parameters of the presented PC structure on the lowest bandgap is performed to investigate the variations of the bandgap width and frequency. Project supported by the China Scholarship Council.

  9. Systematic design of phononic band-gap materials and structures by topology optimization

    DEFF Research Database (Denmark)

    Sigmund, Ole; Jensen, Jakob Søndergaard

    2003-01-01

    Phononic band-gap materials prevent elastic waves in certain frequency ranges from propagating, and they may therefore be used to generate frequency filters, as beam splitters, as sound or vibration protection devices, or as waveguides. In this work we show how topology optimization can be used...... to design and optimize periodic materials and structures exhibiting phononic band gaps. Firstly, we optimize infinitely periodic band-gap materials by maximizing the relative size of the band gaps. Then, finite structures subjected to periodic loading are optimized in order to either minimize the structural...

  10. Graded band-gap engineering for increased efficiency in CZTS solar cells

    Science.gov (United States)

    Ferhati, H.; Djeffal, F.

    2018-02-01

    In this paper, we propose a potential high efficiency Cu2ZnSn(S,Se)4/CdS (CZTS) solar cell design based on graded band-gap engineering that can offer the benefits of improved absorption behavior and reduced recombination effects. Moreover, a new hybrid approach based on analytical modeling and Particle Swarm Optimization (PSO) is proposed to determinate the optimal band-gap profile of the amended CZTS absorber layer to achieve further efficiency enhancement. It is found that the proposed design exhibits superior performance, where a high efficiency of 16.9% is recorded for the optimized solar cell with a relative improvement of 92%, compared with the reference cell efficiency of 8.8%. Likewise, the optimized CZTS solar cell with a graded band-gap enables achieving a higher open circuit voltage of 889 mV, a short-circuit current of 28.5 mA and a fill factor of 66%. Therefore, the optimized CZTS-based solar cell with graded-band gap paradigm pinpoints a new path toward recording high-efficiency thin-film solar cells through enhancing carrier collection and reducing the recombination rate.

  11. SuperB Progress Report: Detector

    Energy Technology Data Exchange (ETDEWEB)

    Grauges, E.; /Barcelona U., ECM; Donvito, G.; Spinoso, V.; /INFN, Bari /Bari U.; Manghisoni, M.; Re, V.; Traversi, G.; /INFN, Pavia /Bergamo U., Ingengneria Dept.; Eigen, G.; Fehlker, D.; Helleve, L.; /Bergen U.; Carbone, A.; Di Sipio, R.; Gabrielli, A.; Galli, D.; Giorgi, F.; Marconi, U.; Perazzini, S.; Sbarra, C.; Vagnoni, V.; Valentinetti, S.; Villa, M.; Zoccoli, A.; /INFN, Bologna /Bologna U. /Caltech /Carleton U. /Cincinnati U. /INFN, CNAF /INFN, Ferrara /Ferrara U. /UC, Irvine /Taras Shevchenko U. /Orsay, LAL /LBL, Berkeley /UC, Berkeley /Frascati /INFN, Legnaro /Orsay, IPN /Maryland U. /McGill U. /INFN, Milan /Milan U. /INFN, Naples /Naples U. /Novosibirsk, IYF /INFN, Padua /Padua U. /INFN, Pavia /Pavia U. /INFN, Perugia /Perugia U. /INFN, Perugia /Caltech /INFN, Pisa /Pisa U. /Pisa, Scuola Normale Superiore /PNL, Richland /Queen Mary, U. of London /Rutherford /INFN, Rome /Rome U. /INFN, Rome2 /Rome U.,Tor Vergata /INFN, Rome3 /Rome III U. /SLAC /Tel Aviv U. /INFN, Turin /Turin U. /INFN, Padua /Trento U. /INFN, Trieste /Trieste U. /TRIUMF /British Columbia U. /Montreal U. /Victoria U.

    2012-02-14

    This report describes the present status of the detector design for SuperB. It is one of four separate progress reports that, taken collectively, describe progress made on the SuperB Project since the publication of the SuperB Conceptual Design Report in 2007 and the Proceedings of SuperB Workshop VI in Valencia in 2008.

  12. SuperB Progress Report: Detector

    International Nuclear Information System (INIS)

    Grauges, E.; Donvito, G.; Spinoso, V.; Manghisoni, M.; Re, V.; Traversi, G.; Eigen, G.; Fehlker, D.; Helleve, L.; Cheng, C.; Chivukula, A.; Doll, D.; Echenard, B.; Hitlin, D.; Ongmongkolkul, P.; Porter, F.; Rakitin, A.; Thomas, M.; Zhu, R.; Tatishvili, G.; Andreassen, R.; Fabby, C.; Meadows, B.; Simpson, A.; Sokoloff, M.; Tomko, K.; Fella, A.; Andreotti, M.; Baldini, W.; Calabrese, R.; Carassiti, V.; Cibinetto, G.; Cotta Ramusino, A.; Gianoli, A.; Luppi, E.; Munerato, M.; Santoro, V.; Tomassetti, L.; Stoker, D.; Bezshyyko, O.; Dolinska, G.; Arnaud, N.; Beigbeder, C.; Bogard, F.; Breton, D.; Burmistrov, L.; Charlet, D.; Maalmi, J.; Perez Perez, L.; Puill, V.; Stocchi, A.; Tocut, V.; Wallon, S.; Wormser, G.; Brown, D.

    2012-01-01

    This report describes the present status of the detector design for SuperB. It is one of four separate progress reports that, taken collectively, describe progress made on the SuperB Project since the publication of the SuperB Conceptual Design Report in 2007 and the Proceedings of SuperB Workshop VI in Valencia in 2008.

  13. SuperB Progress Reports Accelerator

    CERN Document Server

    Biagini, Maria Enrica; Boscolo, M; Buonomo, B; Demma, T; Drago, A; Esposito, M; Guiducci, S; Mazzitelli, G; Pellegrino, L; Preger, M A; Raimondi, P; Ricci, R; Rotundo, U; Sanelli, C; Serio, M; Stella, A; Tomassini, S; Zobov, M; Bertsche, K; Brachman, A; Cai, Y; Chao, A; Chesnut, R; Donald, M.H; Field, C; Fisher, A; Kharakh, D; Krasnykh, A; Moffeit, K; Nosochkov, Y; Pivi, M; Seeman, J; Sullivan, M.K; Weathersby, S; Weidemann, A; Weisend, J; Wienands, U; Wittmer, W; Woods, M; Yocky, G; Bogomiagkov, A; Koop, I; Levichev, E; Nikitin, S; Okunev, I; Piminov, P; Sinyatkin, S; Shatilov, D; Vobly, P; Bosi, F; Liuzzo, S; Paoloni, E; Bonis, J; Chehab, R; Le Meur, G; Lepercq, P; Letellier-Cohen, F; Mercier, B; Poirier, F; Prevost, C; Rimbault, C; Touze, F; Variola, A; Bolzon, B; Brunetti, L; Jeremie, A; Baylac, M; Bourrion, O; De Conto, J M; Gomez, Y; Meot, F; Monseu, N; Tourres, D; Vescovi, C; Chanci, A; Napoly, O; Barber, D P; Bettoni, S; Quatraro, D

    2010-01-01

    This report details the present status of the Accelerator design for the SuperB Project. It is one of four separate progress reports that, taken collectively, describe progress made on the SuperB Project since the publication of the SuperB Conceptual Design Report in 2007 and the Proceedings of SuperB Workshop VI in Valencia in 2008.

  14. Temperature-modified photonic bandgap in colloidal photonic crystals fabricated by vinyl functionalized silica spheres

    International Nuclear Information System (INIS)

    Deng Tiansong; Zhang Junyan; Zhu Kongtao; Zhang Qifeng; Wu Jinlei

    2011-01-01

    Graphical abstract: A thermal annealing procedure was described for fine modifying the photonic bandgap properties of colloidal photonic crystals, which were self-assembled from vinyl-functionalized silica spheres by a gravity sedimentation process. Highlights: → We described a thermal annealing procedure for fine modifying the photonic bandgap properties of colloidal photonic crystals. → The position of its stop band had more than 25% blue shift by annealing the sample from 60 to 600 deg. C. → The annealing temperature and the Bragg peak values have a linear relationship in the 120-440 deg. C range. → The effects provide a simple and controllable method for modifying the photonic bandgap properties of colloidal photonic crystals. - Abstract: A thermal annealing procedure for fine modifying the photonic bandgap properties of colloidal photonic crystals was described. The colloidal photonic crystals were assembled from monodisperse vinyl functionalized silica spheres by a gravity sedimentation process. The samples diffract light following Bragg's law combined with Snell's law. By annealing the sample at temperatures in the range of 60-600 deg. C, the position of its stop band shifted from 943 to 706 nm. It had more than 25% blue shift. In addition, the annealing temperature and the Bragg peak values have a linear relationship in the 120-440 deg. C range. Fourier transform infrared (FT-IR) spectra and thermo-gravimetric analysis (TGA) curves of vinyl functionalized silica spheres confirmed the above results. The effects provide a simple and controllable method for modifying the photonic bandgap properties of colloidal photonic crystals.

  15. Semi-transparent polymer solar cells with excellent sub-bandgap transmission for third generation photovoltaics

    KAUST Repository

    Beiley, Zach M.

    2013-10-07

    Semi-transparent organic photovoltaics are of interest for a variety of photovoltaic applications, including solar windows and hybrid tandem photovoltaics. The figure shows a photograph of our semi-transparent solar cell, which has a power conversion efficiency of 5.0%, with an above bandgap transmission of 34% and a sub-bandgap transmission of 81%. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  16. Deformations of super Riemann surfaces

    International Nuclear Information System (INIS)

    Ninnemann, H.

    1992-01-01

    Two different approaches to (Konstant-Leites-) super Riemann surfaces are investigated. In the local approach, i.e. glueing open superdomains by superconformal transition functions, deformations of the superconformal structure are discussed. On the other hand, the representation of compact super Riemann surfaces of genus greater than one as a fundamental domain in the Poincare upper half-plane provides a simple description of super Laplace operators acting on automorphic p-forms. Considering purely odd deformations of super Riemann surfaces, the number of linear independent holomorphic sections of arbitrary holomorphic line bundles will be shown to be independent of the odd moduli, leading to a simple proof of the Riemann-Roch theorem for compact super Riemann surfaces. As a further consequence, the explicit connections between determinants of super Laplacians and Selberg's super zeta functions can be determined, allowing to calculate at least the 2-loop contribution to the fermionic string partition function. (orig.)

  17. Deformations of super Riemann surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Ninnemann, H [Hamburg Univ. (Germany). 2. Inst. fuer Theoretische Physik

    1992-11-01

    Two different approaches to (Konstant-Leites-) super Riemann surfaces are investigated. In the local approach, i.e. glueing open superdomains by superconformal transition functions, deformations of the superconformal structure are discussed. On the other hand, the representation of compact super Riemann surfaces of genus greater than one as a fundamental domain in the Poincare upper half-plane provides a simple description of super Laplace operators acting on automorphic p-forms. Considering purely odd deformations of super Riemann surfaces, the number of linear independent holomorphic sections of arbitrary holomorphic line bundles will be shown to be independent of the odd moduli, leading to a simple proof of the Riemann-Roch theorem for compact super Riemann surfaces. As a further consequence, the explicit connections between determinants of super Laplacians and Selberg's super zeta functions can be determined, allowing to calculate at least the 2-loop contribution to the fermionic string partition function. (orig.).

  18. Three-terminal heterojunction bipolar transistor solar cell for high-efficiency photovoltaic conversion.

    Science.gov (United States)

    Martí, A; Luque, A

    2015-04-22

    Here we propose, for the first time, a solar cell characterized by a semiconductor transistor structure (n/p/n or p/n/p) where the base-emitter junction is made of a high-bandgap semiconductor and the collector is made of a low-bandgap semiconductor. We calculate its detailed-balance efficiency limit and prove that it is the same one than that of a double-junction solar cell. The practical importance of this result relies on the simplicity of the structure that reduces the number of layers that are required to match the limiting efficiency of dual-junction solar cells without using tunnel junctions. The device naturally emerges as a three-terminal solar cell and can also be used as building block of multijunction solar cells with an increased number of junctions.

  19. Enhanced Impurity-Free Intermixing Bandgap Engineering for InP-Based Photonic Integrated Circuits

    Science.gov (United States)

    Cui, Xiao; Zhang, Can; Liang, Song; Zhu, Hong-Liang; Hou, Lian-Ping

    2014-04-01

    Impurity-free intermixing of InGaAsP multiple quantum wells (MQW) using sputtering Cu/SiO2 layers followed by rapid thermal processing (RTP) is demonstrated. The bandgap energy could be modulated by varying the sputtering power and time of Cu, RTP temperature and time to satisfy the demands for lasers, modulators, photodetector, and passive waveguides for the photonic integrated circuits with a simple procedure. The blueshift of the bandgap wavelength of MQW is experimentally investigated on different sputtering and annealing conditions. It is obvious that the introduction of the Cu layer could increase the blueshift more greatly than the common impurity free vacancy disordering technique. A maximum bandgap blueshift of 172 nm is realized with an annealing condition of 750°C and 200s. The improved technique is promising for the fabrication of the active/passive optoelectronic components on a single wafer with simple process and low cost.

  20. Super-resolution from single photon emission: toward biological application

    Science.gov (United States)

    Moreva, E.; Traina, P.; Forneris, J.; Ditalia Tchernij, S.; Guarina, L.; Franchino, C.; Picollo, F.; Ruo Berchera, I.; Brida, G.; Degiovanni, I. P.; Carabelli, V.; Olivero, P.; Genovese, M.

    2017-08-01

    Properties of quantum light represent a tool for overcoming limits of classical optics. Several experiments have demonstrated this advantage ranging from quantum enhanced imaging to quantum illumination. In this work, experimental demonstration of quantum-enhanced resolution in confocal fluorescence microscopy will be presented. This is achieved by exploiting the non-classical photon statistics of fluorescence emission of single nitrogen-vacancy (NV) color centers in diamond. By developing a general model of super-resolution based on the direct sampling of the kth-order autocorrelation function of the photoluminescence signal, we show the possibility to resolve, in principle, arbitrarily close emitting centers. Finally, possible applications of NV-based fluorescent nanodiamonds in biosensing and future developments will be presented.

  1. Effects of Ge- and Sb-doping and annealing on the tunable bandgaps of SnS films

    Energy Technology Data Exchange (ETDEWEB)

    Hsu, Hsuan-Tai; Chiang, Ming-Hung; Huang, Chen-Hao [Department of Materials Science and Engineering, National Cheng Kung University, Tainan 701, Taiwan (China); Lin, Wen-Tai, E-mail: wtlin@mail.ncku.edu.tw [Department of Materials Science and Engineering, National Cheng Kung University, Tainan 701, Taiwan (China); Fu, Yaw-Shyan [Department of Greenergy, National University of Tainan, Tainan 700, Taiwan (China); Guo, Tzung-Fang [Department of Photonics, Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 701, Taiwan (China)

    2015-06-01

    SnS, Ge- and Sb-doped SnS films with single orthorhombic SnS phase were fabricated via solvothermal routes and subsequent spin-coating, respectively. The substitution solubilities of Ge and Sb in SnS are about 6 and 5 at.%, respectively. The bandgaps of Ge- and Sb-doped SnS films can be tuned in the ranges of 1.25–1.35 and 1.30–1.39 eV, respectively. The possible mechanisms for the tunable bandgaps of Ge- and Sb-doped SnS films are discussed. For the Ge- and Sb-doped SnS films subjected to annealing at 200–350 °C in N{sub 2}, the bandgaps of 200 °C-annealed films remain unchanged, while those of 300 °C- and 350 °C-annealed films decrease with the annealing temperature because of the evaporation of Ge and Sb respectively. - Highlights: • Ge- and Sb-doped SnS films were fabricated via spin-coating. • The solubilities of Ge and Sb in SnS are about 6 and 5 at.%, respectively. • The bandgaps of SnS films can be tuned by Ge and Sb doping respectively. • Annealing above 300 °C reduces the bandgaps of Ge- and Sb-doped SnS films.

  2. Silica-air photonic crystal fiber design that permits waveguiding by a true photonic bandgap effect

    DEFF Research Database (Denmark)

    Barkou, Stig Eigil; Broeng, Jes; Bjarklev, Anders Overgaard

    1999-01-01

    A theoretical investigation of a novel type of optical fiber is presented. The operation of the fiber relies entirely on wave guidance through the photonic bandgap effect and not on total internal reflection, thereby distinguishing that fiber from all other known fibers, including recently studied...... photonic crystal fibers. The novel fiber has a central low-index core region and a cladding consisting of a silica background material with air holes situated within a honeycomb lattice structure. We show the existence of photonic bandgaps for the silica–air cladding structure and demonstrate how light can...... be guided at the central low-index core region for a well-defined frequency that falls inside the photonic bandgap region of the cladding structure....

  3. Four-junction superconducting circuit

    Science.gov (United States)

    Qiu, Yueyin; Xiong, Wei; He, Xiao-Ling; Li, Tie-Fu; You, J. Q.

    2016-01-01

    We develop a theory for the quantum circuit consisting of a superconducting loop interrupted by four Josephson junctions and pierced by a magnetic flux (either static or time-dependent). In addition to the similarity with the typical three-junction flux qubit in the double-well regime, we demonstrate the difference of the four-junction circuit from its three-junction analogue, including its advantages over the latter. Moreover, the four-junction circuit in the single-well regime is also investigated. Our theory provides a tool to explore the physical properties of this four-junction superconducting circuit. PMID:27356619

  4. Small-bandgap semiconducting polymers with high near-infrared photoresponse

    NARCIS (Netherlands)

    Hendriks, K.H.; Li, W.; Wienk, M.M.; Janssen, R.A.J.

    2014-01-01

    Lowering the optical bandgap of conjugated polymers while maintaining a high efficiency for photoinduced charge transfer to suitable electron acceptors such as fullerene has remained a formidable challenge in the area of organic photovoltaics. Here we present the synthesis and application of a

  5. Bandgap Opening in Graphene Induced by Patterned Hydrogen Adsorption

    DEFF Research Database (Denmark)

    Balog, Richard; Jørgensen, Bjarke; Nilsson, Louis

    2010-01-01

    fermions, and graphene shows ballistic charge transport, turning it into an ideal material for circuit fabrication. However, graphene lacks a bandgap around the Fermi level, which is the defining concept for semiconductor materials and essential for controlling the conductivity by electronic means. Theory...

  6. CMOS bandgap references and temperature sensors and their applications

    NARCIS (Netherlands)

    Wang, G.

    2005-01-01

    Two main parts have been presented in this thesis: device characterization and circuit. In integrated bandgap references and temperature sensors, the IC(VBE, characteristics of bipolar transistors are used to generate the basic signals with high accuracy. To investigate the possibilities to

  7. Band-gap tunable dielectric elastomer filter for low frequency noise

    Science.gov (United States)

    Jia, Kun; Wang, Mian; Lu, Tongqing; Zhang, Jinhua; Wang, Tiejun

    2016-05-01

    In the last decades, diverse materials and technologies for sound insulation have been widely applied in engineering. However, suppressing the noise radiation at low frequency still remains a challenge. In this work, a novel membrane-type smart filter, consisting of a pre-stretched dielectric elastomer membrane with two compliant electrodes coated on the both sides, is presented to control the low frequency noise. Since the stiffness of membrane dominates its acoustic properties, sound transmission band-gap of the membrane filter can be tuned by adjusting the voltage applied to the membrane. The impedance tube experiments have been carried out to measure the sound transmission loss (STL) of the filters with different electrodes, membrane thickness and pre-stretch conditions. The experimental results show that the center frequency of sound transmission band-gap mainly depends on the stress in the dielectric elastomer, and a large band-gap shift (more than 60 Hz) can be achieved by tuning the voltage applied to the 85 mm diameter VHB4910 specimen with pre-stretch {λ }0=3. Based on the experimental results and the assumption that applied electric field is independent of the membrane behavior, 3D finite element analysis has also been conducted to calculate the membrane stress variation. The sound filter proposed herein may provide a promising facility to control low frequency noise source with tonal characteristics.

  8. Super periodic potential

    Science.gov (United States)

    Hasan, Mohammd; Mandal, Bhabani Prasad

    2018-04-01

    In this paper we introduce the concept of super periodic potential (SPP) of arbitrary order n, n ∈I+, in one dimension. General theory of wave propagation through SPP of order n is presented and the reflection and transmission coefficients are derived in their closed analytical form by transfer matrix formulation. We present scattering features of super periodic rectangular potential and super periodic delta potential as special cases of SPP. It is found that the symmetric self-similarity is the special case of super periodicity. Thus by identifying a symmetric fractal potential as special cases of SPP, one can obtain the tunnelling amplitude for a particle from such fractal potential. By using the formalism of SPP we obtain the close form expression of tunnelling amplitude of a particle for general Cantor and Smith-Volterra-Cantor potentials.

  9. Wide-bandgap epitaxial heterojunction windows for silicon solar cells

    Science.gov (United States)

    Landis, Geoffrey A.; Loferski, Joseph J.; Beaulieu, Roland; Sekula-Moise, Patricia A.; Vernon, Stanley M.

    1990-01-01

    It is shown that the efficiency of a solar cell can be improved if minority carriers are confined by use of a wide-bandgap heterojunction window. For silicon (lattice constant a = 5.43 A), nearly lattice-matched wide-bandgap materials are ZnS (a = 5.41 A) and GaP (a = 5.45 A). Isotype n-n heterojuntions of both ZnS/Si and GaP/Si were grown on silicon n-p homojunction solar cells. Successful deposition processes used were metalorganic chemical vapor deposition (MO-CVD) for GaP and ZnS, and vacuum evaporation of ZnS. Planar (100) and (111) and texture-etched - (111)-faceted - surfaces were used. A decrease in minority-carrier surface recombination compared to a bare surface was seen from increased short-wavelength spectral response, increased open-circuit voltage, and reduced dark saturation current, with no degradation of the minority carrier diffusion length.

  10. Water-dependent photonic bandgap in silica artificial opals.

    Science.gov (United States)

    Gallego-Gómez, Francisco; Blanco, Alvaro; Canalejas-Tejero, Victor; López, Cefe

    2011-07-04

    Some characteristics of silica--based structures-like the photonic properties of artificial opals formed by silica spheres--can be greatly affected by the presence of adsorbed water. The reversible modification of the water content of an opal is investigated here by moderate heating (below 300 °C) and measuring in situ the changes in the photonic bandgap. Due to reversible removal of interstitial water, large blueshifts of 30 nm and a bandgap narrowing of 7% are observed. The latter is particularly surprising, because water desorption increases the refractive index contrast, which should lead instead to bandgap broadening. A quantitative explanation of this experiment is provided using a simple model for water distribution in the opal that assumes a nonclose-packed fcc structure. This model further predicts that, at room temperature, about 50% of the interstitial water forms necks between nearest-neighbor spheres, which are separated by 5% of their diameter. Upon heating, dehydration predominantly occurs at the sphere surfaces (in the opal voids), so that above 65 °C the remaining water resides exclusively in the necks. A near-close-packed fcc arrangement is only achieved above 200 °C. The high sensitivity to water changes exhibited by silica opals, even under gentle heating of few degrees, must be taken into account for practical applications. Remarkably, accurate control of the distance between spheres--from 16 to 1 nm--is obtained with temperature. In this study, novel use of the optical properties of the opal is made to infer quantitative information about water distribution within silica beads and dehydration phenomena from simple reflection spectra. Taking advantage of the well-defined opal morphology, this approach offers a simple tool for the straightforward investigation of generic adsorption-desorption phenomena, which might be extrapolated to many other fields involving capillary condensation. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGa

  11. Creation of tunable absolute bandgaps in a two-dimensional anisotropic photonic crystal modulated by a nematic liquid crystal

    International Nuclear Information System (INIS)

    Liu Chenyang

    2008-01-01

    Photonic crystals (PCs) have many potential applications because of their ability to control light-wave propagation. We have investigated the tunable absolute bandgap in a two-dimensional anisotropic photonic crystal structures modulated by a nematic liquid crystal. The PC structure composed of an anisotropic-dielectric cylinder in the liquid crystal medium is studied by solving Maxwell's equations using the plane wave expansion method. The photonic band structures are found to exhibit absolute bandgaps for the square and triangular lattices. Numerical simulations show that the absolute bandgaps can be continuously tuned in the square and triangular lattices consisting of anisotropic-dielectric cylinders by infiltrating nematic liquid crystals. Such a mechanism of bandgap adjustment should open up a new application for designing components in photonic integrated circuits

  12. Frames in super Hilbert modules

    Directory of Open Access Journals (Sweden)

    Mehdi Rashidi-Kouchi

    2018-01-01

    Full Text Available In this paper, we define super Hilbert module and investigate frames in this space. Super Hilbert modules are  generalization of super Hilbert spaces in Hilbert C*-module setting. Also, we define frames in a super Hilbert module and characterize them by using of the concept of g-frames in a Hilbert C*-module. Finally, disjoint frames in Hilbert C*-modules are introduced and investigated.

  13. Plasmonically Enhanced Reflectance of Heat Radiation from Low-Bandgap Semiconductor Microinclusions.

    Science.gov (United States)

    Tang, Janika; Thakore, Vaibhav; Ala-Nissila, Tapio

    2017-07-18

    Increased reflectance from the inclusion of highly scattering particles at low volume fractions in an insulating dielectric offers a promising way to reduce radiative thermal losses at high temperatures. Here, we investigate plasmonic resonance driven enhanced scattering from microinclusions of low-bandgap semiconductors (InP, Si, Ge, PbS, InAs and Te) in an insulating composite to tailor its infrared reflectance for minimizing thermal losses from radiative transfer. To this end, we compute the spectral properties of the microcomposites using Monte Carlo modeling and compare them with results from Fresnel equations. The role of particle size-dependent Mie scattering and absorption efficiencies, and, scattering anisotropy are studied to identify the optimal microinclusion size and material parameters for maximizing the reflectance of the thermal radiation. For composites with Si and Ge microinclusions we obtain reflectance efficiencies of 57-65% for the incident blackbody radiation from sources at temperatures in the range 400-1600 °C. Furthermore, we observe a broadbanding of the reflectance spectra from the plasmonic resonances due to charge carriers generated from defect states within the semiconductor bandgap. Our results thus open up the possibility of developing efficient high-temperature thermal insulators through use of the low-bandgap semiconductor microinclusions in insulating dielectrics.

  14. Ballistic Graphene Josephson Junctions from the Short to the Long Junction Regimes.

    Science.gov (United States)

    Borzenets, I V; Amet, F; Ke, C T; Draelos, A W; Wei, M T; Seredinski, A; Watanabe, K; Taniguchi, T; Bomze, Y; Yamamoto, M; Tarucha, S; Finkelstein, G

    2016-12-02

    We investigate the critical current I_{C} of ballistic Josephson junctions made of encapsulated graphene-boron-nitride heterostructures. We observe a crossover from the short to the long junction regimes as the length of the device increases. In long ballistic junctions, I_{C} is found to scale as ∝exp(-k_{B}T/δE). The extracted energies δE are independent of the carrier density and proportional to the level spacing of the ballistic cavity. As T→0 the critical current of a long (or short) junction saturates at a level determined by the product of δE (or Δ) and the number of the junction's transversal modes.

  15. Equivalent Josephson junctions

    International Nuclear Information System (INIS)

    Boyadzhiev, T.L.; ); Semerdzhieva, E.G.; Shukrinov, Yu.M.; Fiziko-Tekhnicheskij Inst., Dushanbe

    2008-01-01

    The magnetic field dependences of critical current are numerically constructed for a long Josephson junction with a shunt- or resistor-type microscopic inhomogeneities and compared to the critical curve of a junction with exponentially varying width. The numerical results show that it is possible to replace the distributed inhomogeneity of a long Josephson junction by an inhomogeneity localized at one of its ends, which has certain technological advantages. It is also shown that the critical curves of junctions with exponentially varying width and inhomogeneities localized at the ends are unaffected by the mixed fluxon-antifluxon distributions of the magnetic flux [ru

  16. Junction and circuit fabrication

    International Nuclear Information System (INIS)

    Jackel, L.D.

    1980-01-01

    Great strides have been made in Josephson junction fabrication in the four years since the first IC SQUID meeting. Advances in lithography have allowed the production of devices with planar dimensions as small as a few hundred angstroms. Improved technology has provided ultra-high sensitivity SQUIDS, high-efficiency low-noise mixers, and complex integrated circuits. This review highlights some of the new fabrication procedures. The review consists of three parts. Part 1 is a short summary of the requirements on junctions for various applications. Part 2 reviews intergrated circuit fabrication, including tunnel junction logic circuits made at IBM and Bell Labs, and microbridge radiation sources made at SUNY at Stony Brook. Part 3 describes new junction fabrication techniques, the major emphasis of this review. This part includes a discussion of small oxide-barrier tunnel junctions, semiconductor barrier junctions, and microbridge junctions. Part 3 concludes by considering very fine lithography and limitations to miniaturization. (orig.)

  17. Theoretical prediction of sandwiched two-dimensional phosphide binary compound sheets with tunable bandgaps and anisotropic physical properties

    Science.gov (United States)

    Zhang, C. Y.; Yu, M.

    2018-03-01

    Atomic layers of GaP and InP binary compounds with unique anisotropic structural, electronic and mechanical properties have been predicted from first-principle molecular dynamics simulations. These new members of the phosphide binary compound family stabilize to a sandwiched two-dimensional (2D) crystalline structure with orthorhombic lattice symmetry and high buckling of 2.14 Å-2.46 Å. Their vibration modes are similar to those of phosphorene with six Raman active modes ranging from ˜80 cm-1 to 400 cm-1. The speeds of sound in their phonon dispersions reflect anisotropy in their elastic constants, which was further confirmed by their strong directional dependence of Young’s moduli and effective nonlinear elastic moduli. They show wide bandgap semiconductor behavior with fundamental bandgaps of 2.89 eV for GaP and 2.59 eV for InP, respectively, even wider than their bulk counterparts. Such bandgaps were found to be tunable under strain. In particular, a direct-indirect bandgap transition was found under certain strains along zigzag or biaxial orientations, reflecting their promising applications in strain-induced bandgap engineering in nanoelectronics and photovoltaics. Feasible pathways to realize these novel 2D phosphide compounds are also proposed.

  18. Enhanced photosensitization process induced by the p–n junction of Bi2O2CO3/BiOCl heterojunctions on the degradation of rhodamine B

    International Nuclear Information System (INIS)

    Lu, Haijing; Xu, Lingling; Wei, Bo; Zhang, Mingyi; Gao, Hong; Sun, Wenjun

    2014-01-01

    Herein, we report the enhanced photosensitization process in the nanosheet Bi 2 O 2 CO 3 /BiOCl heterojunctions photocatalyst. The combined XRD, FT-IR and Raman results have confirmed the co-existence of Bi 2 O 2 CO 3 and BiOCl phases in the composites. Although both Bi 2 O 2 CO 3 and BiOCl are wide bandgap semiconductors, the composites showed an unexpectedly high catalytic activity in decomposing RhB (rhodamine B) aqueous solution under visible light irradiation. The mechanism of enhanced photocatalytic activity was ascribed to the inner electric field formed in the Bi 2 O 2 CO 3 /BiOCl p–n junction.

  19. Optical spectroscopy and imaging of the higher energy excitons and bandgap of monolayer MoS2

    Science.gov (United States)

    Borys, Nicholas; Bao, Wei; Barnard, Edward; Ko, Changhyun; Tongay, Sefaatin; Wu, Junqiao; Yang, Li; Schuck, P. James

    Monolayer MoS2 (ML-MoS2) exhibits a rich manifold of excitons that dictate optoelectronic performance and functionality. Disentangling these states, which include the quasi-particle bandgap, is critical for developing 2D optoelectronic devices that operate beyond the optical bandgap. Whereas photoluminescence (PL) spectroscopy only probes the lowest-energy radiative state and absorption spectroscopy fails to discriminate energetically degenerate states, photoluminescence excitation (PLE) spectroscopy selectively probes only the excited states that thermalize to the emissive ground state exciton. Using PLE spectroscopy of ML-MoS2, we identify the Rydberg series of the exciton A and exciton B states as well as signatures of the quasi-particle bandgap and coupling between the indirect C exciton and the lowest-energy A exciton, which have eluded previous PLE studies. The assignment of these states is confirmed with density functional theory. Mapping the PLE spectrum reveals spatial variations of the higher-energy exciton manifold and quasi-particle bandgap which mirror the heterogeneity in the PL but also indicate variations in local exciton thermalization processes and chemical potentials.

  20. High-Power Yb-Doped Solid-Core Photonic Bandgap Fiber Amplifier at 1150-1200nm

    DEFF Research Database (Denmark)

    Maruyama, H.; Shirakawa, A.; Ueda, K.

    2008-01-01

    Solid-core photonic-bandgap fiber amplification at the long-wavelength edge of ytterbium band is reported. A 32W output at 1156nm with a 66% slope efficiency and 9.1W output at 1178nm were succesfully obtained.......Solid-core photonic-bandgap fiber amplification at the long-wavelength edge of ytterbium band is reported. A 32W output at 1156nm with a 66% slope efficiency and 9.1W output at 1178nm were succesfully obtained....

  1. (Super Variable Costing-Throughput Costing)

    OpenAIRE

    Çakıcı, Cemal

    2006-01-01

    (Super Variable Costing-Throughput Costing) The aim of this study is to explain the super-variable costing method which is a new subject in cost and management accounting and to show it’s working practicly.Shortly, super-variable costing can be defined as a costing method which is use only direct material costs in calculate of product costs and treats all costs except these (direct labor and overhead) as periad costs or operating costs.By using super-variable costing method, product costs ar...

  2. Two-dimensional dopant profiling for shallow junctions by TEM and AFM

    International Nuclear Information System (INIS)

    Yoo, K.

    2000-01-01

    respectively. For the Etch/AFM method, to overcome the artefact induced by tip size, for the first time a detailed investigation was made of the convolution occurring for the etched MOSFET structures and a double deconvolution method was developed. The resulting 2-D dopant profiles for n + /p 80nm deep junction sample showed reasonable agreement with Etch/TEM method demonstrating the advantage of the developed deconvolution method. For the first time, the present work successfully achieved quantitative 2-D dopant profiles for sub-100nm deep junctions. The developed dopant profiling methods are expected to contribute to the research and development for next generation devices. (author)

  3. Electrically tuned super-capacitors

    OpenAIRE

    Chowdhury, Tazima S.; Grebel, Haim

    2015-01-01

    Fast charging and discharging of large amounts of electrical energy make super-capacitors ideal for short-term energy storage [1-5]. In its simplest form, the super-capacitor is an electrolytic capacitor made of an anode and a cathode immersed in an electrolyte. As for an ordinary capacitor, minimizing the charge separation distance and increasing the electrode area increase capacitance. In super-capacitors, charge separation is of nano-meter scale at each of the electrode interface (the Helm...

  4. Example-Based Super-Resolution Fluorescence Microscopy.

    Science.gov (United States)

    Jia, Shu; Han, Boran; Kutz, J Nathan

    2018-04-23

    Capturing biological dynamics with high spatiotemporal resolution demands the advancement in imaging technologies. Super-resolution fluorescence microscopy offers spatial resolution surpassing the diffraction limit to resolve near-molecular-level details. While various strategies have been reported to improve the temporal resolution of super-resolution imaging, all super-resolution techniques are still fundamentally limited by the trade-off associated with the longer image acquisition time that is needed to achieve higher spatial information. Here, we demonstrated an example-based, computational method that aims to obtain super-resolution images using conventional imaging without increasing the imaging time. With a low-resolution image input, the method provides an estimate of its super-resolution image based on an example database that contains super- and low-resolution image pairs of biological structures of interest. The computational imaging of cellular microtubules agrees approximately with the experimental super-resolution STORM results. This new approach may offer potential improvements in temporal resolution for experimental super-resolution fluorescence microscopy and provide a new path for large-data aided biomedical imaging.

  5. In- and Ga-based inorganic double perovskites with direct bandgaps for photovoltaic applications.

    Science.gov (United States)

    Dai, Jun; Ma, Liang; Ju, Minggang; Huang, Jinsong; Zeng, Xiao Cheng

    2017-08-16

    Double perovskites in the form of A 2 B'B''X 6 (A = Cs, B' = Ag, B'' = Bi) have been reported as potential alternatives to lead-containing organometal trihalide perovskites. However, all double perovskites synthesized to date exhibit indirect bandgaps >1.95 eV, which are undesirable for photovoltaic and optoelectronic applications. Herein, we report a comprehensive computer-aided screening of In- and Ga-based double perovskites for potential photovoltaic applications. To this end, several preconditions are implemented for the screening of optimal candidates, which include structural stability, electronic bandgaps, and optical absorption. Importantly, four In- and Ga-based double perovskites are identified to possess direct bandgaps within the desirable range of 0.9-1.6 eV for photovoltaic applications. Dominant optical absorption of the four double perovskites is found to be in the UV range. The structural and thermal stability of the four double perovskites are examined using both the empirical Goldschmidt ratio and convex-hull calculations. Only Cs 2 AgInBr 6 is predicted to be thermodynamically stable.

  6. Handbook of Super 8 Production.

    Science.gov (United States)

    Telzer, Ronnie, Ed.

    This handbook is designed for anyone interested in producing super 8 films at any level of complexity and cost. Separate chapters present detailed discussions of the following topics: super 8 production systems and super 8 shooting and editing systems; budgeting; cinematography and sound recording; preparing to edit; editing; mixing sound tracks;…

  7. Automating Energy Bandgap Measurements in Semiconductors Using LabVIEW

    Science.gov (United States)

    Garg, Amit; Sharma, Reena; Dhingra, Vishal

    2010-01-01

    In this paper, we report the development of an automated system for energy bandgap and resistivity measurement of a semiconductor sample using Four-Probe method for use in the undergraduate laboratory of Physics and Electronics students. The automated data acquisition and analysis system has been developed using National Instruments USB-6008 DAQ…

  8. InGaP Heterojunction Barrier Solar Cells

    Science.gov (United States)

    Welser, Roger E. (Inventor)

    2014-01-01

    A new solar cell structure called a heterojunction barrier solar cell is described. As with previously reported quantum-well and quantum-dot solar cell structures, a layer of narrow band-gap material, such as GaAs or indium-rich InGaP, is inserted into the depletion region of a wide band-gap PN junction. Rather than being thin, however, the layer of narrow band-gap material is about 400-430 nm wide and forms a single, ultrawide well in the depletion region. Thin (e.g., 20-50 nm), wide band-gap InGaP barrier layers in the depletion region reduce the diode dark current. Engineering the electric field and barrier profile of the absorber layer, barrier layer, and p-type layer of the PN junction maximizes photogenerated carrier escape. This new twist on nanostructured solar cell design allows the separate optimization of current and voltage to maximize conversion efficiency.

  9. Light Absorption Enhancement of Silicon-Based Photovoltaic Devices with Multiple Bandgap Structures of Porous Silicon

    Directory of Open Access Journals (Sweden)

    Kuen-Hsien Wu

    2015-09-01

    Full Text Available Porous-silicon (PS multi-layered structures with three stacked PS layers of different porosity were prepared on silicon (Si substrates by successively tuning the electrochemical-etching parameters in an anodization process. The three PS layers have different optical bandgap energy and construct a triple-layered PS (TLPS structure with multiple bandgap energy. Photovoltaic devices were fabricated by depositing aluminum electrodes of Schottky contacts on the surfaces of the developed TLPS structures. The TLPS-based devices exhibit broadband photoresponses within the spectrum of the solar irradiation and get high photocurrent for the incident light of a tungsten lamp. The improved spectral responses of devices are owing to the multi-bandgap structures of TLPS, which are designed with a layered configuration analog to a tandem cell for absorbing a wider energy range of the incidental sun light. The large photocurrent is mainly ascribed to an enhanced light-absorption ability as a result of applying nanoporous-Si thin films as the surface layers to absorb the short-wavelength light and to improve the Schottky contacts of devices. Experimental results reveal that the multi-bandgap PS structures produced from electrochemical-etching of Si wafers are potentially promising for development of highly efficient Si-based solar cells.

  10. The super-resolution debate

    Science.gov (United States)

    Won, Rachel

    2018-05-01

    In the quest for nanoscopy with super-resolution, consensus from the imaging community is that super-resolution is not always needed and that scientists should choose an imaging technique based on their specific application.

  11. Macroscopic quantum tunneling in Josephson tunnel junctions and Coulomb blockade in single small tunnel junctions

    International Nuclear Information System (INIS)

    Cleland, A.N.

    1991-04-01

    Experiments investigating the process of macroscopic quantum tunneling in a moderately-damped, resistively shunted, Josephson junction are described, followed by a discussion of experiments performed on very small capacitance normal-metal tunnel junctions. The experiments on the resistively-shunted Josephson junction were designed to investigate a quantum process, that of the tunneling of the Josephson phase variable under a potential barrier, in a system in which dissipation plays a major role in the dynamics of motion. All the parameters of the junction were measured using the classical phenomena of thermal activation and resonant activation. Theoretical predictions are compared with the experimental results, showing good agreement with no adjustable parameters; the tunneling rate in the moderately damped (Q ∼ 1) junction is seen to be reduced by a factor of 300 from that predicted for an undamped junction. The phase is seen to be a good quantum-mechanical variable. The experiments on small capacitance tunnel junctions extend the measurements on the larger-area Josephson junctions from the region in which the phase variable has a fairly well-defined value, i.e. its wavefunction has a narrow width, to the region where its value is almost completely unknown. The charge on the junction becomes well-defined and is predicted to quantize the current through the junction, giving rise to the Coulomb blockade at low bias. I present the first clear observation of the Coulomb blockade in single junctions. The electrical environment of the tunnel junction, however, strongly affects the behavior of the junction: higher resistance leads are observed to greatly sharpen the Coulomb blockade over that seen with lower resistance leads. I present theoretical descriptions of how the environment influences the junctions; comparisons with the experimental results are in reasonable agreement

  12. Band structure of germanium carbides for direct bandgap silicon photonics

    Energy Technology Data Exchange (ETDEWEB)

    Stephenson, C. A., E-mail: cstephe3@nd.edu; Stillwell, R. A.; Wistey, M. A. [Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556 (United States); O' Brien, W. A. [Rigetti Quantum Computing, 775 Heinz Avenue, Berkeley, California 94710 (United States); Penninger, M. W. [Honeywell UOP, Des Plaines, Illinois 60016 (United States); Schneider, W. F. [Department of Chemical and Biomolecular Engineering, University of Notre Dame, Notre Dame, Indiana 46556 (United States); Gillett-Kunnath, M. [Department of Chemistry, Syracuse University, Syracuse, New York 13244 (United States); Zajicek, J. [Department of Chemistry and Biochemistry, University of Notre Dame, Notre Dame, Indiana 46556 (United States); Yu, K. M. [Department of Physics and Materials Science, City University of Hong Kong, Hong Kong (China); Kudrawiec, R. [Institute of Physics, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27, 50-370 Wroclaw (Poland)

    2016-08-07

    Compact optical interconnects require efficient lasers and modulators compatible with silicon. Ab initio modeling of Ge{sub 1−x}C{sub x} (x = 0.78%) using density functional theory with HSE06 hybrid functionals predicts a splitting of the conduction band at Γ and a strongly direct bandgap, consistent with band anticrossing. Photoreflectance of Ge{sub 0.998}C{sub 0.002} shows a bandgap reduction supporting these results. Growth of Ge{sub 0.998}C{sub 0.002} using tetrakis(germyl)methane as the C source shows no signs of C-C bonds, C clusters, or extended defects, suggesting highly substitutional incorporation of C. Optical gain and modulation are predicted to rival III–V materials due to a larger electron population in the direct valley, reduced intervalley scattering, suppressed Auger recombination, and increased overlap integral for a stronger fundamental optical transition.

  13. Visible light photoreactivity from hybridization states between carbon nitride bandgap states and valence states in Nb and Ti oxides

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Hosik, E-mail: hosiklee@gmail.com [School of Mechanical and Advanced Materials Engineering, Ulsan National Institute of Science and Technology (UNIST), Unist-gil 100 Eonyang-eup, Ulsan 689-798 (Korea, Republic of); Ohno, Takahisa, E-mail: OHNO.Takahisa@nims.go.jp [Global Research Center for Environment and Energy based on Nanomaterials Science (GREEN), National Institute for Material Science, 1-2-1 Sengen, Tsukuba (Japan); Computational Materials Science Unit (CMSU), National Institute for Materials Science (NIMS), Tsukuba, Ibaraki 305-0047 (Japan)

    2013-03-29

    Highlights: ► Origin of bandgap reduction for visible photoreactivity is suggested. ► Carbon nitride adsorption in interlayer space can induce the bandgap reduction. ► The electronic structures are studied by density functional theory calculations. - Abstract: For better efficiency as photocatalysts, N-doping for visible light reactivity has been intensively studied in Lamellar niobic and titanic solid acids (HNb{sub 3}O{sub 8}, H{sub 2}Ti{sub 4}O{sub 9}), and its microscopic structures have been debated in this decade. We calculate the layered solid acids’ structures and bandgaps. Bandgap reduction by carbon nitride adsorption in interlayer space is observed computationally. It originates from localized nitrogen states which form delocalized top-valence states by hybridizing with the host oxygen states and can contribute to photo-current.

  14. Pseudo-direct bandgap transitions in silicon nanocrystals: effects on optoelectronics and thermoelectrics

    Science.gov (United States)

    Singh, Vivek; Yu, Yixuan; Sun, Qi-C.; Korgel, Brian; Nagpal, Prashant

    2014-11-01

    While silicon nanostructures are extensively used in electronics, the indirect bandgap of silicon poses challenges for optoelectronic applications like photovoltaics and light emitting diodes (LEDs). Here, we show that size-dependent pseudo-direct bandgap transitions in silicon nanocrystals dominate the interactions between (photoexcited) charge carriers and phonons, and hence the optoelectronic properties of silicon nanocrystals. Direct measurements of the electronic density of states (DOS) for different sized silicon nanocrystals reveal that these pseudo-direct transitions, likely arising from the nanocrystal surface, can couple with the quantum-confined silicon states. Moreover, we demonstrate that since these transitions determine the interactions of charge carriers with phonons, they change the light emission, absorption, charge carrier diffusion and phonon drag (Seebeck coefficient) in nanoscaled silicon semiconductors. Therefore, these results can have important implications for the design of optoelectronics and thermoelectric devices based on nanostructured silicon.While silicon nanostructures are extensively used in electronics, the indirect bandgap of silicon poses challenges for optoelectronic applications like photovoltaics and light emitting diodes (LEDs). Here, we show that size-dependent pseudo-direct bandgap transitions in silicon nanocrystals dominate the interactions between (photoexcited) charge carriers and phonons, and hence the optoelectronic properties of silicon nanocrystals. Direct measurements of the electronic density of states (DOS) for different sized silicon nanocrystals reveal that these pseudo-direct transitions, likely arising from the nanocrystal surface, can couple with the quantum-confined silicon states. Moreover, we demonstrate that since these transitions determine the interactions of charge carriers with phonons, they change the light emission, absorption, charge carrier diffusion and phonon drag (Seebeck coefficient) in

  15. Linewidth of Cyclotron Absorption in Band-Gap Graphene: Relaxation Time Approximation vs. Monte Carlo Method

    OpenAIRE

    S.V. Kryuchkov; E.I. Kukhar’; D.V. Zav’yalov

    2015-01-01

    The power of the elliptically polarized electromagnetic radiation absorbed by band-gap graphene in presence of constant magnetic field is calculated. The linewidth of cyclotron absorption is shown to be non-zero even if the scattering is absent. The calculations are performed analytically with the Boltzmann kinetic equation and confirmed numerically with the Monte Carlo method. The dependence of the linewidth of the cyclotron absorption on temperature applicable for a band-gap graphene in the...

  16. SuperMAG: Present and Future Capabilities

    Science.gov (United States)

    Hsieh, S. W.; Gjerloev, J. W.; Barnes, R. J.

    2009-12-01

    SuperMAG is a global collaboration that provides ground magnetic field perturbations from a long list of stations in the same coordinate system, identical time resolution and with a common baseline removal approach. This unique high quality dataset provides a continuous and nearly global monitoring of the ground magnetic field perturbation. Currently, only archived data are available on the website and hence it targets basic research without any operational capabilities. The existing SuperMAG software can be easily adapted to ingest real-time or near real-time data and provide a now-casting capability. The SuperDARN program has a long history of providing near real-time maps of the northern hemisphere electrostatic potential and as both SuperMAG and SuperDARN share common software it is relatively easy to adapt these maps for global magnetic perturbations. Magnetometer measurements would be assimilated by the SuperMAG server using a variety of techniques, either by downloading data at regular intervals from remote servers or by real-time streaming connections. The existing SuperMAG analysis software would then process these measurements to provide the final calibrated data set using the SuperMAG coordinate system. The existing plotting software would then be used to produce regularly updated global plots. The talk will focus on current SuperMAG capabilities illustrating the potential for now-casting and eventually forecasting.

  17. Recent Advances in High Efficiency Solar Cells

    Institute of Scientific and Technical Information of China (English)

    Yoshio; Ohshita; Hidetoshi; Suzuki; Kenichi; Nishimura; Masafumi; Yamaguchi

    2007-01-01

    1 Results The conversion efficiency of sunlight to electricity is limited around 25%,when we use single junction solar cells. In the single junction cells,the major energy losses arise from the spectrum mismatching. When the photons excite carriers with energy well in excess of the bandgap,these excess energies were converted to heat by the rapid thermalization. On the other hand,the light with lower energy than that of the bandgap cannot be absorbed by the semiconductor,resulting in the losses. One way...

  18. Super-quasi-conformal transformation and Schiffer variation on super-Riemann surface

    International Nuclear Information System (INIS)

    Takahasi, Wataru

    1990-01-01

    A set of equations which characterizes the super-Teichmueller deformations is proposed. It is a supersymmetric extension of the Beltrami equation. Relations between the set of equations and the Schiffer variations with the KN bases are discussed. This application of the KN bases shows the powerfulness of the KN theory in the study of super-Riemann surfaces. (author)

  19. Josephson junction arrays

    International Nuclear Information System (INIS)

    Bindslev Hansen, J.; Lindelof, P.E.

    1985-01-01

    In this review we intend to cover recent work involving arrays of Josephson junctions. The work on such arrays falls naturally into three main areas of interest: 1. Technical applications of Josephson junction arrays for high-frequency devices. 2. Experimental studies of 2-D model systems (Kosterlitz-Thouless phase transition, commensurate-incommensurate transition in frustrated (flux) lattices). 3. Investigations of phenomena associated with non-equilibrium superconductivity in and around Josephson junctions (with high current density). (orig./BUD)

  20. Origin of unusual bandgap shift and dual emission in organic-inorganic lead halide perovskites.

    Science.gov (United States)

    Dar, M Ibrahim; Jacopin, Gwénolé; Meloni, Simone; Mattoni, Alessandro; Arora, Neha; Boziki, Ariadni; Zakeeruddin, Shaik Mohammed; Rothlisberger, Ursula; Grätzel, Michael

    2016-10-01

    Emission characteristics of metal halide perovskites play a key role in the current widespread investigations into their potential uses in optoelectronics and photonics. However, a fundamental understanding of the molecular origin of the unusual blueshift of the bandgap and dual emission in perovskites is still lacking. In this direction, we investigated the extraordinary photoluminescence behavior of three representatives of this important class of photonic materials, that is, CH 3 NH 3 PbI 3 , CH 3 NH 3 PbBr 3 , and CH(NH 2 ) 2 PbBr 3 , which emerged from our thorough studies of the effects of temperature on their bandgap and emission decay dynamics using time-integrated and time-resolved photoluminescence spectroscopy. The low-temperature (photoluminescence of CH 3 NH 3 PbI 3 and CH 3 NH 3 PbBr 3 reveals two distinct emission peaks, whereas that of CH(NH 2 ) 2 PbBr 3 shows a single emission peak. Furthermore, irrespective of perovskite composition, the bandgap exhibits an unusual blueshift by raising the temperature from 15 to 300 K. Density functional theory and classical molecular dynamics simulations allow for assigning the additional photoluminescence peak to the presence of molecularly disordered orthorhombic domains and also rationalize that the unusual blueshift of the bandgap with increasing temperature is due to the stabilization of the valence band maximum. Our findings provide new insights into the salient emission properties of perovskite materials, which define their performance in solar cells and light-emitting devices.

  1. Droplet Image Super Resolution Based on Sparse Representation and Kernel Regression

    Science.gov (United States)

    Zou, Zhenzhen; Luo, Xinghong; Yu, Qiang

    2018-05-01

    Microgravity and containerless conditions, which are produced via electrostatic levitation combined with a drop tube, are important when studying the intrinsic properties of new metastable materials. Generally, temperature and image sensors can be used to measure the changes of sample temperature, morphology and volume. Then, the specific heat, surface tension, viscosity changes and sample density can be obtained. Considering that the falling speed of the material sample droplet is approximately 31.3 m/s when it reaches the bottom of a 50-meter-high drop tube, a high-speed camera with a collection rate of up to 106 frames/s is required to image the falling droplet. However, at the high-speed mode, very few pixels, approximately 48-120, will be obtained in each exposure time, which results in low image quality. Super-resolution image reconstruction is an algorithm that provides finer details than the sampling grid of a given imaging device by increasing the number of pixels per unit area in the image. In this work, we demonstrate the application of single image-resolution reconstruction in the microgravity and electrostatic levitation for the first time. Here, using the image super-resolution method based on sparse representation, a low-resolution droplet image can be reconstructed. Employed Yang's related dictionary model, high- and low-resolution image patches were combined with dictionary training, and high- and low-resolution-related dictionaries were obtained. The online double-sparse dictionary training algorithm was used in the study of related dictionaries and overcome the shortcomings of the traditional training algorithm with small image patch. During the stage of image reconstruction, the algorithm of kernel regression is added, which effectively overcomes the shortcomings of the Yang image's edge blurs.

  2. Wide angle light collection with ultralow reflection and super scattering by silicon micro-nanostructures for thin crystalline silicon solar cell applications

    International Nuclear Information System (INIS)

    Das, Sonali; Kundu, Avra; Saha, Hiranmay; Datta, Swapan K

    2016-01-01

    Conventional c-Si solar cells employ micron-sized pyramids for achieving reduced reflection (∼10%) and enhanced light trapping by multiple bounces (maximum 3) of the incident light. Alternatively, bio-mimetic, moth-eye sub-wavelength nanostructures offer broadband antireflection properties (∼3%) suitable for solar cell applications in the optical regime. However, such structures do not provide any advantage in the charge carrier extraction process as radial junctions cannot be formed in such sub-wavelength dimensions and they have high surface area causing increased charged carrier recombination. The choice of the geometry for achieving optimum photon–electron harvesting for solar applications is therefore very critical. Cross-fertilization of the conventional solar cell light-trapping techniques and the sub-wavelength nanostructures results in unique micro-nanostructures (structures having sub-wavelength dimensions as well as dimensions of the order of few microns) which provide advanced light management capabilities along with the ability of realizing radial junctions. It is seen that an ultralow reflection along with wide angle light collection is obtained which enables such structures to overcome the morning, evening and winter light losses in solar cells. Further, super-scattering in the structures offer enhanced light trapping not only in the structure itself but also in the substrate housing the structure. Ray and wave optics have been used to understand the optical benefits of the structures. It is seen that the aspect ratio of the structures plays the most significant role for achieving such light management capabilities, and efficiencies as high as 12% can be attained. Experiments have been carried out to fabricate a unique micro-nanomaze-like structure instead of a periodic array of micro-nanostructures with the help of nanosphere lithography and the MacEtch technique. It is seen that randomized micro-nanomaze geometry offers very good

  3. Optimization and experimental validation of stiff porous phononic plates for widest complete bandgap of mixed fundamental guided wave modes

    Science.gov (United States)

    Hedayatrasa, Saeid; Kersemans, Mathias; Abhary, Kazem; Uddin, Mohammad; Van Paepegem, Wim

    2018-01-01

    Phononic crystal plates (PhPs) have promising application in manipulation of guided waves for design of low-loss acoustic devices and built-in acoustic metamaterial lenses in plate structures. The prominent feature of phononic crystals is the existence of frequency bandgaps over which the waves are stopped, or are resonated and guided within appropriate defects. Therefore, maximized bandgaps of PhPs are desirable to enhance their phononic controllability. Porous PhPs produced through perforation of a uniform background plate, in which the porous interfaces act as strong reflectors of wave energy, are relatively easy to produce. However, the research in optimization of porous PhPs and experimental validation of achieved topologies has been very limited and particularly focused on bandgaps of flexural (asymmetric) wave modes. In this paper, porous PhPs are optimized through an efficient multiobjective genetic algorithm for widest complete bandgap of mixed fundamental guided wave modes (symmetric and asymmetric) and maximized stiffness. The Pareto front of optimization is analyzed and variation of bandgap efficiency with respect to stiffness is presented for various optimized topologies. Selected optimized topologies from the stiff and compliant regimes of Pareto front are manufactured by water-jetting an aluminum plate and their promising bandgap efficiency is experimentally observed. An optimized Pareto topology is also chosen and manufactured by laser cutting a Plexiglas (PMMA) plate, and its performance in self-collimation and focusing of guided waves is verified as compared to calculated dispersion properties.

  4. All-PM monolithic fs Yb-fiber laser, dispersion-managed with all-solid photonic bandgap fiber

    DEFF Research Database (Denmark)

    Liu, Xiaomin; Lægsgaard, Jesper; Turchinovich, Dmitry

    2009-01-01

    All-in-fiber SESAM-modelocked self-starting fiber laser is demonstrated. Cavity dispersion is managed by a spliced-in PM all-solid photonic bandgap fiber. The laser directly delivers 1.25 nJ pulses of 280 fs duration.......All-in-fiber SESAM-modelocked self-starting fiber laser is demonstrated. Cavity dispersion is managed by a spliced-in PM all-solid photonic bandgap fiber. The laser directly delivers 1.25 nJ pulses of 280 fs duration....

  5. Electronic thermometry in tunable tunnel junction

    Science.gov (United States)

    Maksymovych, Petro

    2016-03-15

    A tunable tunnel junction thermometry circuit includes a variable width tunnel junction between a test object and a probe. The junction width is varied and a change in thermovoltage across the junction with respect to the change in distance across the junction is determined. Also, a change in biased current with respect to a change in distance across the junction is determined. A temperature gradient across the junction is determined based on a mathematical relationship between the temperature gradient, the change in thermovoltage with respect to distance and the change in biased current with respect to distance. Thermovoltage may be measured by nullifying a thermoelectric tunneling current with an applied voltage supply level. A piezoelectric actuator may modulate the probe, and thus the junction width, to vary thermovoltage and biased current across the junction. Lock-in amplifiers measure the derivatives of the thermovoltage and biased current modulated by varying junction width.

  6. Super families

    International Nuclear Information System (INIS)

    Amato, N.; Maldonado, R.H.C.

    1989-01-01

    The study on phenomena in the super high energy region, Σ E j > 1000 TeV revealed events that present a big dark spot in central region with high concentration of energy and particles, called halo. Six super families with halo were analysed by Brazil-Japan Cooperation of Cosmic Rays. For each family the lateral distribution of energy density was constructed and R c Σ E (R c ) was estimated. For studying primary composition, the energy correlation with particles released separately in hadrons and gamma rays was analysed. (M.C.K.)

  7. Flexible substrate based 2D ZnO (n)/graphene (p) rectifying junction as enhanced broadband photodetector using strain modulation

    Science.gov (United States)

    Sahatiya, Parikshit; Jones, S. Solomon; Thanga Gomathi, P.; Badhulika, Sushmee

    2017-06-01

    Strain modulation is considered to be an effective way to modulate the electronic structure and carrier behavior in flexible semiconductors heterojunctions. In this work, 2D Graphene (Gr)/ZnO junction was successfully fabricated on flexible eraser substrate using simple, low-cost solution processed hydrothermal method and has been utilized for broadband photodetection in the UV to visible range at room temperature. Optimization in terms of process parameters were done to obtain 2D ZnO over 2D graphene which shows decrease in bandgap and broad absorption range from UV to visible. Under compressive strain piezopotential induced by the atoms displacements in 2D ZnO, 87% enhanced photosensing for UV light was observed under 30% strain. This excellent performance improvement can be attributed to piezopotential induced under compressive strain in 2D ZnO which results in lowering of conduction band energy and raising the schottky barrier height thereby facilitating electron-hole pair separation in 2D Gr/ZnO junction. Detailed mechanism studies in terms of density of surface states and energy band diagram is presented to understand the proposed phenomena. Results provide an excellent approach for improving the optoelectronic performance of 2D Gr/ZnO interface which can also be applied to similar semiconductor heterojunctions.

  8. Fabrication and characterization of porous-core honeycomb bandgap THz fibers

    DEFF Research Database (Denmark)

    Bao, Hualong; Nielsen, Kristian; Rasmussen, Henrik K.

    We have fabricated a porous-core honeycomb fiber in the cyclic olefin copolymer (COC) Topas® by drill-draw technology [1]. A cross-sectional image of the fabricated fiber is shown in the left Panel of Fig. 1. Simulation of the electromagnetic properties of the fiber shows two wide bandgaps within......-TDS system (Picometrix T-Ray 4000). The reference pulse before coupling into the fiber is shown in Fig. 1(a) and the time trace of the THz pulse after propagation through a 5-cm long segment of fiber is shown in Fig. 1(b) (blue curve). After adding some water on the outside of the fiber surface......, the transmitted pulse experiences less pronounced oscillations at times later than 20 ps ( red curve in Fig. 1(b)). Figs. 1(c) and (d) show the short-time Fourier transforms of the two time-domain traces in Fig. 1(b), overlaid with the calculated group delay in the two bandgaps (black squares). The frequencies...

  9. Electronic structure characterization and bandgap engineering of solar hydrogen materials

    International Nuclear Information System (INIS)

    Guo, Jinghua

    2007-01-01

    Bandgap, band edge positions as well as the overall band structure of semiconductors are of crucial importance in photoelectrochemical and photocatalytic applications. The energy position of the band edge level can be controlled by the electronegativity of the dopants, the pH of the solution (flatband potential variation of 60 mV per pH unit), as well as by quantum confinement effects. Accordingly, band edges and bandgap can be tailored to achieve specific electronic, optical or photocatalytic properties. Synchrotron radiation with photon energy at or below 1 keV is giving new insight into such areas as condensed matter physics and extreme ultraviolet optics technology. In the soft x-ray region, the question tends to be, what are the electrons doing as they migrated between the atoms. In this paper, I will present a number of soft x-ray spectroscopic study of nanostructured 3d metal compounds Fe 2 O 3 and ZnO

  10. Intermediate Bandgap Solar Cells From Nanostructured Silicon

    Energy Technology Data Exchange (ETDEWEB)

    Black, Marcie [Bandgap Engineering, Lincoln, MA (United States)

    2014-10-30

    This project aimed to demonstrate increased electronic coupling in silicon nanostructures relative to bulk silicon for the purpose of making high efficiency intermediate bandgap solar cells using silicon. To this end, we formed nanowires with controlled crystallographic orientation, small diameter, <111> sidewall faceting, and passivated surfaces to modify the electronic band structure in silicon by breaking down the symmetry of the crystal lattice. We grew and tested these silicon nanowires with <110>-growth axes, which is an orientation that should produce the coupling enhancement.

  11. Dynamics of Josephson junction arrays

    International Nuclear Information System (INIS)

    Hadley, P.

    1989-01-01

    The dynamics of Josephson junction arrays is a topic that lies at the intersection of the fields of nonlinear dynamics and Josephson junction technology. The series arrays considered here consist of several rapidly oscillating Josephson junctions where each junction is coupled equally to every other junction. The purpose of this study is to understand phaselocking and other cooperative dynamics of this system. Previously, little was known about high dimensional nonlinear systems of this sort. Numerical simulations are used to study the dynamics of these arrays. Three distinct types of periodic solutions to the array equations were observed as well as period doubled and chaotic solutions. One of the periodic solutions is the symmetric, in-phase solution where all of the junctions oscillate identically. The other two periodic solutions are symmetry-broken solutions where all of the junction do not oscillate identically. The symmetry-broken solutions are highly degenerate. As many as (N - 1) stable solutions can coexist for an array of N junctions. Understanding the stability of these several solutions and the transitions among them is vital to the design of useful devices

  12. Overcoming challenges

    Medline Plus

    Full Text Available ... section Back to section menu It's Only Natural Planning ahead Breastfeeding and baby basics Making breastfeeding work ... It's Only Natural Overcoming challenges It's Only Natural Planning ahead Addressing breastfeeding myths Overcoming challenges Common questions ...

  13. SuperAGILE Services at ASDC

    International Nuclear Information System (INIS)

    Preger, B.; Verrecchia, F.; Pittori, C.; Antonelli, L. A.; Giommi, P.; Lazzarotto, F.; Evangelista, Y.

    2008-01-01

    The Italian Space Agency Science Data Center (ASDC) is a facility with several responsibilities including support to all the ASI scientific missions as for management and archival of the data, acting as the interface between ASI and the scientific community and providing on-line access to the data hosted. In this poster we describe the services that ASDC provides for SuperAGILE, in particular the ASDC public web pages devoted to the dissemination of SuperAGILE scientific results. SuperAGILE is the X-Ray imager onboard the AGILE mission, and provides the scientific community with orbit-by-orbit information on the observed sources. Crucial source information including position and flux in chosen energy bands will be reported in the SuperAGILE public web page at ASDC. Given their particular interest, another web page will be dedicated entirely to GRBs and other transients, where new event alerts will be notified and where users will find all the available informations on the GRBs detected by SuperAGILE

  14. The Super-Kamiokande detector

    International Nuclear Information System (INIS)

    Fukuda, S.; Fukuda, Y.; Hayakawa, T.; Ichihara, E.; Ishitsuka, M.; Itow, Y.; Kajita, T.; Kameda, J.; Kaneyuki, K.; Kasuga, S.; Kobayashi, K.; Kobayashi, Y.; Koshio, Y.; Miura, M.; Moriyama, S.; Nakahata, M.; Nakayama, S.; Namba, T.; Obayashi, Y.; Okada, A.; Oketa, M.; Okumura, K.; Oyabu, T.; Sakurai, N.; Shiozawa, M.; Suzuki, Y.; Takeuchi, Y.; Toshito, T.; Totsuka, Y.; Yamada, S.; Desai, S.; Earl, M.; Hong, J.T.; Kearns, E.; Masuzawa, M.; Messier, M.D.; Stone, J.L.; Sulak, L.R.; Walter, C.W.; Wang, W.; Scholberg, K.; Barszczak, T.; Casper, D.; Liu, D.W.; Gajewski, W.; Halverson, P.G.; Hsu, J.; Kropp, W.R.; Mine, S.; Price, L.R.; Reines, F.; Smy, M.; Sobel, H.W.; Vagins, M.R.; Ganezer, K.S.; Keig, W.E.; Ellsworth, R.W.; Tasaka, S.; Flanagan, J.W.; Kibayashi, A.; Learned, J.G.; Matsuno, S.; Stenger, V.J.; Hayato, Y.; Ishii, T.; Ichikawa, A.; Kanzaki, J.; Kobayashi, T.; Maruyama, T.; Nakamura, K.; Oyama, Y.; Sakai, A.; Sakuda, M.; Sasaki, O.; Echigo, S.; Iwashita, T.; Kohama, M.; Suzuki, A.T.; Hasegawa, M.; Inagaki, T.; Kato, I.; Maesaka, H.; Nakaya, T.; Nishikawa, K.; Yamamoto, S.; Haines, T.J.; Kim, B.K.; Sanford, R.; Svoboda, R.; Blaufuss, E.; Chen, M.L.; Conner, Z.; Goodman, J.A.; Guillian, E.; Sullivan, G.W.; Turcan, D.; Habig, A.; Ackerman, M.; Goebel, F.; Hill, J.; Jung, C.K.; Kato, T.; Kerr, D.; Malek, M.; Martens, K.; Mauger, C.; McGrew, C.; Sharkey, E.; Viren, B.; Yanagisawa, C.; Doki, W.; Inaba, S.; Ito, K.; Kirisawa, M.; Kitaguchi, M.; Mitsuda, C.; Miyano, K.; Saji, C.; Takahata, M.; Takahashi, M.; Higuchi, K.; Kajiyama, Y.; Kusano, A.; Nagashima, Y.; Nitta, K.; Takita, M.; Yamaguchi, T.; Yoshida, M.; Kim, H.I.; Kim, S.B.; Yoo, J.; Okazawa, H.; Etoh, M.; Fujita, K.; Gando, Y.; Hasegawa, A.; Hasegawa, T.; Hatakeyama, S.; Inoue, K.; Ishihara, K.; Iwamoto, T.; Koga, M.; Nishiyama, I.; Ogawa, H.; Shirai, J.; Suzuki, A.; Takayama, T.; Tsushima, F.; Koshiba, M.; Ichikawa, Y.; Hashimoto, T.; Hatakeyama, Y.; Koike, M.; Horiuchi, T.; Nemoto, M.; Nishijima, K.; Takeda, H.; Fujiyasu, H.; Futagami, T.; Ishino, H.; Kanaya, Y.; Morii, M.; Nishihama, H.; Nishimura, H.; Suzuki, T.; Watanabe, Y.; Kielczewska, D.; Golebiewska, U.; Berns, H.G.; Boyd, S.B.; Doyle, R.A.; George, J.S.; Stachyra, A.L.; Wai, L.L.; Wilkes, R.J.; Young, K.K.; Kobayashi, H.

    2003-01-01

    Super-Kamiokande is the world's largest water Cherenkov detector, with net mass 50,000 tons. During the period April, 1996 to July, 2001, Super-Kamiokande I collected 1678 live-days of data, observing neutrinos from the Sun, Earth's atmosphere, and the K2K long-baseline neutrino beam with high efficiency. These data provided crucial information for our current understanding of neutrino oscillations, as well as setting stringent limits on nucleon decay. In this paper, we describe the detector in detail, including its site, configuration, data acquisition equipment, online and offline software, and calibration systems which were used during Super-Kamiokande I

  15. Generation of live offspring from vitrified embryos with synthetic polymers SuperCool X-1000 and SuperCool Z-1000.

    Science.gov (United States)

    Marco-Jimenez, F; Jimenez-Trigos, E; Lavara, R; Vicente, J S

    2014-01-01

    Ice growth and recrystallisation are considered important factors in determining vitrification outcomes. Synthetic polymers inhibit ice formation during cooling or warming of the vitrification process. The aim of this study was to assess the effect of adding commercially available synthetic polymers SuperCool X-1000 and SuperCool Z-1000 to vitrification media on in vivo development competence of rabbit embryos. Four hundred and thirty morphologically normal embryos recovered at 72 h of gestation were used. The vitrification media contained 20% dimethyl sulphoxide and 20% ethylene glycol, either alone or in combination with 1% of SuperCool X-1000 and 1% SuperCool. Our results show that embryos can be successfully vitrified using SuperCool X-1000 and SuperCool Z-1000 and when embryos are transferred, live offspring can be successfully produced. In conclusion, our results demonstrated that we succeeded for the first time in obtaining live offspring after vitrification of embryos using SuperCool X-1000 and SuperCool Z-1000 polymers.

  16. Further results on super graceful labeling of graphs

    Directory of Open Access Journals (Sweden)

    Gee-Choon Lau

    2016-08-01

    Full Text Available Let G=(V(G,E(G be a simple, finite and undirected graph of order p and size q. A bijection f:V(G∪E(G→{k,k+1,k+2,…,k+p+q−1} such that f(uv=|f(u−f(v| for every edge uv∈E(G is said to be a k-super graceful labeling of G. We say G is k-super graceful if it admits a k-super graceful labeling. For k=1, the function f is called a super graceful labeling and a graph is super graceful if it admits a super graceful labeling. In this paper, we study the super gracefulness of complete graph, the disjoint union of certain star graphs, the complete tripartite graphs K(1,1,n, and certain families of trees. We also present four methods of constructing new super graceful graphs. In particular, all trees of order at most 7 are super graceful. We conjecture that all trees are super graceful.

  17. Overcoming challenges

    Medline Plus

    Full Text Available ... breastfeeding Overcoming challenges Common questions about breastfeeding and pain Breastfeeding checklist: How to get a good latch Finding ... myths Overcoming challenges Common questions about breastfeeding and pain Breastfeeding checklist: How to get a good latch Finding ...

  18. Ultrasonic bandgaps in 3D-printed periodic ceramic microlattices

    Czech Academy of Sciences Publication Activity Database

    Kruisová, Alena; Ševčík, Martin; Seiner, Hanuš; Sedlák, Petr; Román-Manso, B.; Miranzo, P.; Belmonte, M.; Landa, Michal

    January (2018), s. 91-100 ISSN 0041-624X R&D Projects: GA ČR GA17-01618S Institutional support: RVO:61388998 Keywords : phononic crystals * ceramic s * additive manufacturing * bandgaps * wave propagation * finite elements method Subject RIV: BI - Acoustics OBOR OECD: Applied mechanics Impact factor: 2.327, year: 2016 http://dx.doi.org/10.1016/j.ultras.2017.07.017

  19. Electromagnetic interference reduction using electromagnetic bandgap structures in packages, enclosures, cavities, and antennas

    Science.gov (United States)

    Mohajer Iravani, Baharak

    Electromagnetic interference (EMI) is a source of noise problems in electronic devices. The EMI is attributed to coupling between sources of radiation and components placed in the same media such as package or chassis. This coupling can be either through conducting currents or through radiation. The radiation of electromagnetic (EM) fields is supported by surface currents. Thus, minimizing these surface currents is considered a major and critical step to suppress EMI. In this work, we present novel strategies to confine surface currents in different applications including packages, enclosures, cavities, and antennas. The efficiency of present methods of EM noise suppression is limited due to different drawbacks. For example, the traditional use of lossy materials and absorbers suffers from considerable disadvantages including mechanical and thermal reliability leading to limited life time, cost, volume, and weight. In this work, we consider the use of Electromagnetic Band Gap (EBG) structures. These structures are suitable for suppressing surface currents within a frequency band denoted as the bandgap. Their design is straight forward, they are inexpensive to implement, and they do not suffer from the limitations of the previous methods. A new method of EM noise suppression in enclosures and cavity-backed antennas using mushroom-type EBG structures is introduced. The effectiveness of the EBG as an EMI suppresser is demonstrated using numerical simulations and experimental measurements. To allow integration of EBGs in printed circuit boards and packages, novel miniaturized simple planar EBG structures based on use of high-k dielectric material (epsilonr > 100) are proposed. The design consists of meander lines and patches. The inductive meander lines serve to provide current continuity bridges between the capacitive patches. The high-k dielectric material increases the effective capacitive load substantially in comparison to commonly used material with much lower

  20. Tight junctions and human diseases.

    Science.gov (United States)

    Sawada, Norimasa; Murata, Masaki; Kikuchi, Keisuke; Osanai, Makoto; Tobioka, Hirotoshi; Kojima, Takashi; Chiba, Hideki

    2003-09-01

    Tight junctions are intercellular junctions adjacent to the apical end of the lateral membrane surface. They have two functions, the barrier (or gate) function and the fence function. The barrier function of tight junctions regulates the passage of ions, water, and various macromolecules, even of cancer cells, through paracellular spaces. The barrier function is thus relevant to edema, jaundice, diarrhea, and blood-borne metastasis. On the other hand, the fence function maintains cell polarity. In other words, tight junctions work as a fence to prevent intermixing of molecules in the apical membrane with those in the lateral membrane. This function is deeply involved in cancer cell biology, in terms of loss of cell polarity. Of the proteins comprising tight junctions, integral membrane proteins occludin, claudins, and JAMs have been recently discovered. Of these molecules, claudins are exclusively responsible for the formation of tight-junction strands and are connected with the actin cytoskeleton mediated by ZO-1. Thus, both functions of tight junctions are dependent on the integrity of the actin cytoskeleton as well as ATP. Mutations in the claudin14 and the claudin16 genes result in hereditary deafness and hereditary hypomagnesemia, respectively. Some pathogenic bacteria and viruses target and affect the tight-junction function, leading to diseases. In this review, the relationship between tight junctions and human diseases is summarized.

  1. A single-gradient junction technique to replace multiple-junction shifts for craniospinal irradiation treatment

    International Nuclear Information System (INIS)

    Hadley, Austin; Ding, George X.

    2014-01-01

    Craniospinal irradiation (CSI) requires abutting fields at the cervical spine. Junction shifts are conventionally used to prevent setup error–induced overdosage/underdosage from occurring at the same location. This study compared the dosimetric differences at the cranial-spinal junction between a single-gradient junction technique and conventional multiple-junction shifts and evaluated the effect of setup errors on the dose distributions between both techniques for a treatment course and single fraction. Conventionally, 2 lateral brain fields and a posterior spine field(s) are used for CSI with weekly 1-cm junction shifts. We retrospectively replanned 4 CSI patients using a single-gradient junction between the lateral brain fields and the posterior spine field. The fields were extended to allow a minimum 3-cm field overlap. The dose gradient at the junction was achieved using dose painting and intensity-modulated radiation therapy planning. The effect of positioning setup errors on the dose distributions for both techniques was simulated by applying shifts of ± 3 and 5 mm. The resulting cervical spine doses across the field junction for both techniques were calculated and compared. Dose profiles were obtained for both a single fraction and entire treatment course to include the effects of the conventional weekly junction shifts. Compared with the conventional technique, the gradient-dose technique resulted in higher dose uniformity and conformity to the target volumes, lower organ at risk (OAR) mean and maximum doses, and diminished hot spots from systematic positioning errors over the course of treatment. Single-fraction hot and cold spots were improved for the gradient-dose technique. The single-gradient junction technique provides improved conformity, dose uniformity, diminished hot spots, lower OAR mean and maximum dose, and one plan for the entire treatment course, which reduces the potential human error associated with conventional 4-shifted plans

  2. Defects induced luminescence and tuning of bandgap energy narrowing in ZnO nanoparticles doped with Li ions

    KAUST Repository

    Awan, Saif Ullah; Hasanain, S. K.; Hassnain Jaffari, G.; Anjum, Dalaver H.; Qurashi, Umar S.

    2014-01-01

    Microstructural and optical properties of Zn1-yLiyO (0.00 ≤y ≤0.10) nanoparticles are investigated. Li incorporation leads to substantial changes in the structural characterization. From micro-structural analysis, no secondary phases or clustering of Li was detected. Elemental maps confirmed homogeneous distribution of Li in ZnO. Sharp UV peak due to the recombination of free exciton and defects based luminescence broad visible band was observed. The transition from the conduction band to Zinc vacancy defect level in photoluminescence spectra is found at 518±2.5nm. The yellow luminescence was observed and attributed to Li related defects in doped samples. With increasing Li doping, a decrease in energy bandgap was observed in the range 3.26±0.014 to 3.17±0.018eV. The bandgap narrowing behavior is explained in terms of the band tailing effect due to structural disorder, carrier-impurities, carrier-carrier, and carrier-phonon interactions. Tuning of the bandgap energy in this class of wide bandgap semiconductor is very important for room temperature spintronics applications and optical devices. © 2014 AIP Publishing LLC.

  3. Defects induced luminescence and tuning of bandgap energy narrowing in ZnO nanoparticles doped with Li ions

    KAUST Repository

    Awan, Saif Ullah

    2014-08-28

    Microstructural and optical properties of Zn1-yLiyO (0.00 ≤y ≤0.10) nanoparticles are investigated. Li incorporation leads to substantial changes in the structural characterization. From micro-structural analysis, no secondary phases or clustering of Li was detected. Elemental maps confirmed homogeneous distribution of Li in ZnO. Sharp UV peak due to the recombination of free exciton and defects based luminescence broad visible band was observed. The transition from the conduction band to Zinc vacancy defect level in photoluminescence spectra is found at 518±2.5nm. The yellow luminescence was observed and attributed to Li related defects in doped samples. With increasing Li doping, a decrease in energy bandgap was observed in the range 3.26±0.014 to 3.17±0.018eV. The bandgap narrowing behavior is explained in terms of the band tailing effect due to structural disorder, carrier-impurities, carrier-carrier, and carrier-phonon interactions. Tuning of the bandgap energy in this class of wide bandgap semiconductor is very important for room temperature spintronics applications and optical devices. © 2014 AIP Publishing LLC.

  4. Super cool X-1000 and Super cool Z-1000, two ice blockers, and their effect on vitrification/warming of mouse embryos.

    Science.gov (United States)

    Badrzadeh, H; Najmabadi, S; Paymani, R; Macaso, T; Azadbadi, Z; Ahmady, A

    2010-07-01

    To evaluate the survival and blastocyst formation rates of mouse embryos after vitrification/thaw process with different ice blocker media. We used X-1000 and Z-1000 separately and mixed using V-Kim, a closed vitrification system. Mouse embryos were vitrified using ethylene glycol based medium supplemented with Super cool X-1000 and/or Super cool Z-1000. Survival rates for the control, Super cool X-1000, Super cool Z-1000, and Super cool X-1000/Z-1000 groups were 74%, 72%, 68%, and 85% respectively, with no significant difference among experimental and control groups; however, a significantly higher survival rate was noticed in the Super cool X-1000/Z-1000 group when compared with the Super cool Z-1000 group. Blastocyst formation rates for the control, Super cool X-1000, Super cool Z-1000, and Super cool X-1000/Z-1000 groups were 71%, 66%, 65%, and 72% respectively. There was no significant difference in this rate among control and experimental groups. In a closed vitrification system, addition of ice blocker Super cool X-1000 to the vitrification solution containing Super cool Z-1000 may improve the embryo survival rate. We recommend combined ice blocker usage to optimize the vitrification outcome. Copyright (c) 2010 Elsevier Ireland Ltd. All rights reserved.

  5. Self-stabilization of a mode-locked femtosecond fiber laser using a photonic bandgap fiber

    DEFF Research Database (Denmark)

    Liu, Xiaomin; Lægsgaard, Jesper; Turchinovich, Dmitry

    2010-01-01

    We demonstrate a self-stabilization mechanism of a semiconductor saturable absorber mode-locked linearcavity Yb-doped fiber laser using an intracavity photonic bandgap fiber. This mechanism relies on the spectral shift of the laser pulses to a spectral range of higher anomalous dispersion...... and higher loss of the photonic bandgap fiber, as a reaction to the intracavity power buildup. This, in particular, results in a smaller cavity loss for the stably mode-locked laser, as opposed to the Q-switched mode-locking scenario. The laser provides stable 39–49 pJ pulses of around 230 fs duration at 29...

  6. Superstring field theories on super-flag manifolds: superdiff S1/S1 and superdiff S1/super S1

    International Nuclear Information System (INIS)

    Zhao Zhiyong; Wu, Ke; Saito, Takesi

    1987-01-01

    We generalize the geometric approach of Bowick and Rajeev [BR] to superstring field theories. The anomaly is identified with nonvanishing of the Ricci curvature of the super-flag manifold. We explicitly calculate the curvatures of superdiff S 1 /S 1 and superdiff S 1 /superS 1 using super-Toeplitz operator techniques. No regularization is needed in this formalism. The critical dimension D=10 is rediscovered as a result of vanishing curvature of the product bundle over the super-flag manifold. (orig.)

  7. Macroscopic quantum tunneling in Josephson tunnel junctions and Coulomb blockade in single small tunnel junctions

    International Nuclear Information System (INIS)

    Cleland, A.N.

    1991-01-01

    Experiments investigated the process of macroscopic quantum tunneling in a moderately-damped, resistively shunted, Josephson junction are described, followed by a discussion of experiments performed on very-small-capacitance normal-metal tunnel junctions. The experiments on the resistively-shunted Josephson junction were designed to investigate a quantum process, that of the tunneling of the Josephson-phase variable under a potential barrier, in a system in which dissipation plays a major role in the dynamics of motion. All the parameters of the junction were measured using the classical phenomena of thermal activation and resonant activation. Theoretical predictions are compared with the experimental results, showing good agreement with no adjustable parameters. The experiments on small-capacitance tunnel junctions extend the measurements on the large-area Josephson junctions from the region in which the phase variable has a fairly well-defined value, i.e. its wave function has a narrow width, to the region where its value is almost completely unknown. The charge on the junction becomes well-defined and is predicted to quantize the current through the junction, giving rise to the Coulomb blockade at low bias

  8. Increasing gap junctional coupling: a tool for dissecting the role of gap junctions

    DEFF Research Database (Denmark)

    Axelsen, Lene Nygaard; Haugan, Ketil; Stahlhut, Martin

    2007-01-01

    Much of our current knowledge about the physiological and pathophysiological role of gap junctions is based on experiments where coupling has been reduced by either chemical agents or genetic modification. This has brought evidence that gap junctions are important in many physiological processes....... In a number of cases, gap junctions have been implicated in the initiation and progress of disease, and experimental uncoupling has been used to investigate the exact role of coupling. The inverse approach, i.e., to increase coupling, has become possible in recent years and represents a new way of testing...... the role of gap junctions. The aim of this review is to summarize the current knowledge obtained with agents that selectively increase gap junctional intercellular coupling. Two approaches will be reviewed: increasing coupling by the use of antiarrhythmic peptide and its synthetic analogs...

  9. Nanoscale probing of bandgap states on oxide particles using electron energy-loss spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Qianlang [School for the Engineering of Matter, Transport and Energy, Arizona State University, 85287 AZ (United States); March, Katia [Laboratoire de Physique des Solides, Bâtiment 510, Université Paris-Sud, 91405 Orsay Cedex (France); Crozier, Peter A., E-mail: CROZIER@asu.edu [School for the Engineering of Matter, Transport and Energy, Arizona State University, 85287 AZ (United States)

    2017-07-15

    Surface and near-surface electronic states were probed with nanometer spatial resolution in MgO and TiO{sub 2} anatase nanoparticles using ultra-high energy resolution electron energy-loss spectroscopy (EELS) coupled to a scanning transmission electron microscope (STEM). This combination allows the surface electronic structure determined with spectroscopy to be correlated with nanoparticle size, morphology, facet etc. By acquiring the spectra in aloof beam mode, radiation damage to the surface can be significantly reduced while maintaining the nanometer spatial resolution. MgO and TiO{sub 2} showed very different bandgap features associated with the surface/sub-surface layer of the nanoparticles. Spectral simulations based on dielectric theory and density of states models showed that a plateau feature found in the pre-bandgap region in the spectra from (100) surfaces of 60 nm MgO nanocubes is consistent with a thin hydroxide surface layer. The spectroscopy shows that this hydroxide species gives rise to a broad filled surface state at 1.1 eV above the MgO valence band. At the surfaces of TiO{sub 2} nanoparticles, pronounced peaks were observed in the bandgap region, which could not be well fitted to defect states. In this case, the high refractive index and large particle size may make Cherenkov or guided light modes the likely causes of the peaks. - Highlights: • Bandgap states detected with aloof beam monochromated EELS on oxide nanoparticle surfaces. • Dielectric theory applied to simulate the spectra and interpret surface structure. • Density of states models also be employed to understand the surface electronic structure. • In MgO, one states associate with water species was found close to the valence band edge. • In anatase, two mid-gap states associated with point defects were found.

  10. SuperB Progress Report for Physics

    Energy Technology Data Exchange (ETDEWEB)

    O' Leary, B.; /Aachen, Tech. Hochsch.; Matias, J.; Ramon, M.; /Barcelona, IFAE; Pous, E.; /Barcelona U.; De Fazio, F.; Palano, A.; /INFN, Bari; Eigen, G.; /Bergen U.; Asgeirsson, D.; /British Columbia U.; Cheng, C.H.; Chivukula, A.; Echenard, B.; Hitlin, D.G.; Porter, F.; Rakitin, A.; /Caltech; Heinemeyer, S.; /Cantabria Inst. of Phys.; McElrath, B.; /CERN; Andreassen, R.; Meadows, B.; Sokoloff, M.; /Cincinnati U.; Blanke, M.; /Cornell U., Phys. Dept.; Lesiak, T.; /Cracow, INP /DESY /Zurich, ETH /INFN, Ferrara /Frascati /INFN, Genoa /Glasgow U. /Indiana U. /Mainz U., Inst. Phys. /Karlsruhe, Inst. Technol. /KEK, Tsukuba /LBL, Berkeley /UC, Berkeley /Lisbon, IST /Ljubljana U. /Madrid, Autonoma U. /Maryland U. /MIT /INFN, Milan /McGill U. /Munich, Tech. U. /Notre Dame U. /PNL, Richland /INFN, Padua /Paris U., VI-VII /Orsay, LAL /Orsay, LPT /INFN, Pavia /INFN, Perugia /INFN, Pisa /Queen Mary, U. of London /Regensburg U. /Republica U., Montevideo /Frascati /INFN, Rome /INFN, Rome /INFN, Rome /Rutherford /Sassari U. /Siegen U. /SLAC /Southern Methodist U. /Tel Aviv U. /Tohoku U. /INFN, Turin /INFN, Trieste /Uppsala U. /Valencia U., IFIC /Victoria U. /Wayne State U. /Wisconsin U., Madison

    2012-02-14

    SuperB is a high luminosity e{sup +}e{sup -} collider that will be able to indirectly probe new physics at energy scales far beyond the reach of any man made accelerator planned or in existence. Just as detailed understanding of the Standard Model of particle physics was developed from stringent constraints imposed by flavour changing processes between quarks, the detailed structure of any new physics is severely constrained by flavour processes. In order to elucidate this structure it is necessary to perform a number of complementary studies of a set of golden channels. With these measurements in hand, the pattern of deviations from the Standard Model behavior can be used as a test of the structure of new physics. If new physics is found at the LHC, then the many golden measurements from SuperB will help decode the subtle nature of the new physics. However if no new particles are found at the LHC, SuperB will be able to search for new physics at energy scales up to 10-100 TeV. In either scenario, flavour physics measurements that can be made at SuperB play a pivotal role in understanding the nature of physics beyond the Standard Model. Examples for using the interplay between measurements to discriminate New Physics models are discussed in this document. SuperB is a Super Flavour Factory, in addition to studying large samples of B{sub u,d,s}, D and {tau} decays, SuperB has a broad physics programme that includes spectroscopy both in terms of the Standard Model and exotica, and precision measurements of sin{sup 2} {theta}{sub W}. In addition to performing CP violation measurements at the {Upsilon}(4S) and {phi}(3770), SuperB will test CPT in these systems, and lepton universality in a number of different processes. The multitude of rare decay measurements possible at SuperB can be used to constrain scenarios of physics beyond the Standard Model. In terms of other precision tests of the Standard Model, this experiment will be able to perform precision over

  11. SuperB Progress Report for Physics

    International Nuclear Information System (INIS)

    O'Leary, B.; Matias, J.; Ramon, M.

    2012-01-01

    SuperB is a high luminosity e + e - collider that will be able to indirectly probe new physics at energy scales far beyond the reach of any man made accelerator planned or in existence. Just as detailed understanding of the Standard Model of particle physics was developed from stringent constraints imposed by flavour changing processes between quarks, the detailed structure of any new physics is severely constrained by flavour processes. In order to elucidate this structure it is necessary to perform a number of complementary studies of a set of golden channels. With these measurements in hand, the pattern of deviations from the Standard Model behavior can be used as a test of the structure of new physics. If new physics is found at the LHC, then the many golden measurements from SuperB will help decode the subtle nature of the new physics. However if no new particles are found at the LHC, SuperB will be able to search for new physics at energy scales up to 10-100 TeV. In either scenario, flavour physics measurements that can be made at SuperB play a pivotal role in understanding the nature of physics beyond the Standard Model. Examples for using the interplay between measurements to discriminate New Physics models are discussed in this document. SuperB is a Super Flavour Factory, in addition to studying large samples of B u,d,s , D and τ decays, SuperB has a broad physics programme that includes spectroscopy both in terms of the Standard Model and exotica, and precision measurements of sin 2 θ W . In addition to performing CP violation measurements at the Υ(4S) and φ(3770), SuperB will test CPT in these systems, and lepton universality in a number of different processes. The multitude of rare decay measurements possible at SuperB can be used to constrain scenarios of physics beyond the Standard Model. In terms of other precision tests of the Standard Model, this experiment will be able to perform precision over-constraints of the unitarity triangle through

  12. Super-Resolution for Synthetic Zooming

    Directory of Open Access Journals (Sweden)

    Li Xin

    2006-01-01

    Full Text Available Optical zooming is an important feature of imaging systems. In this paper, we investigate a low-cost signal processing alternative to optical zooming—synthetic zooming by super-resolution (SR techniques. Synthetic zooming is achieved by registering a sequence of low-resolution (LR images acquired at varying focal lengths and reconstructing the SR image at a larger focal length or increased spatial resolution. Under the assumptions of constant scene depth and zooming speed, we argue that the motion trajectories of all physical points are related to each other by a unique vanishing point and present a robust technique for estimating its D coordinate. Such a line-geometry-based registration is the foundation of SR for synthetic zooming. We address the issue of data inconsistency arising from the varying focal length of optical lens during the zooming process. To overcome the difficulty of data inconsistency, we propose a two-stage Delaunay-triangulation-based interpolation for fusing the LR image data. We also present a PDE-based nonlinear deblurring to accommodate the blindness and variation of sensor point spread functions. Simulation results with real-world images have verified the effectiveness of the proposed SR techniques for synthetic zooming.

  13. Probing defect states in polycrystalline GaN grown on Si(111) by sub-bandgap laser-excited scanning tunneling spectroscopy

    Science.gov (United States)

    Hsiao, F.-M.; Schnedler, M.; Portz, V.; Huang, Y.-C.; Huang, B.-C.; Shih, M.-C.; Chang, C.-W.; Tu, L.-W.; Eisele, H.; Dunin-Borkowski, R. E.; Ebert, Ph.; Chiu, Y.-P.

    2017-01-01

    We demonstrate the potential of sub-bandgap laser-excited cross-sectional scanning tunneling microscopy and spectroscopy to investigate the presence of defect states in semiconductors. The characterization method is illustrated on GaN layers grown on Si(111) substrates without intentional buffer layers. According to high-resolution transmission electron microscopy and cathodoluminescence spectroscopy, the GaN layers consist of nanoscale wurtzite and zincblende crystallites with varying crystal orientations and hence contain high defect state densities. In order to discriminate between band-to-band excitation and defect state excitations, we use sub-bandgap laser excitation. We probe a clear increase in the tunnel current at positive sample voltages during sub-bandgap laser illumination for the GaN layer with high defect density, but no effect is found for high quality GaN epitaxial layers. This demonstrates the excitation of free charge carriers at defect states. Thus, sub-bandgap laser-excited scanning tunneling spectroscopy is a powerful complimentary characterization tool for defect states.

  14. Wild Band Edges: The Role of Bandgap Grading and Band-Edge Fluctuations in High-Efficiency Chalcogenide Devices: Preprint

    Energy Technology Data Exchange (ETDEWEB)

    Repins, Ingrid; Mansfield, Lorelle; Kanevce, Ana; Jensen, Soren A.; Kuciauskas, Darius; Glynn, Stephen; Barnes, Teresa; Metzger, Wyatt; Burst, James; Jiang, Chun-Sheng; Dippo, Patricia; Harvey, Steve; Teeter, Glenn; Perkins, Craig; Egaas, Brian; Zakutayev, Andriy; Alsmeier, J.-H.; Lussky, T.; Korte, L.; Wilks, R. G.; Bar, M.; Yan, Y.; Lany, Stephan; Zawadzki, Pawel; Park, Ji-Sang; Wei, Suhuai

    2016-06-16

    Band-edge effects -- including grading, electrostatic fluctuations, bandgap fluctuations, and band tails -- affect chalcogenide device efficiency. These effects now require more careful consideration as efficiencies increase beyond 20%. Several aspects of the relationships between band-edge phenomena and device performance for NREL absorbers are examined. For Cu(In,Ga)Se2 devices, recent increases in diffusion length imply changes to optimum bandgap profile. The origin, impact, and modification of electrostatic and bandgap fluctuations are also discussed. The application of the same principles to devices based on CdTe, kesterites, and emerging absorbers (Cu2SnS3, CuSbS2), considering differences in materials properties and defect formation energies, is examined.

  15. A 98 W 1178 nm Yb-doped solid-core photonic bandgap fiber oscillator

    International Nuclear Information System (INIS)

    Fan, Xinyan; Chen, Mingchen; Shirakawa, Akira; Ueda, Ken-ichi; Olausson, Christina B; Broeng, Jes

    2013-01-01

    A high-power ytterbium-doped solid-core photonic bandgap fiber laser directly oscillating at 1178 nm is reported. The sharp-cut bandpass distributed filtering effect of photonic bandgap fiber can suppress amplified spontaneous emission (ASE) in the conventional high-gain spectral region. The oscillator is composed of a high reflection fiber Bragg grating spliced with a 39 m gain fiber and a Fresnel fiber end surface. A model based on rate equations is investigated numerically. A record output power of 98 W is achieved with a slope efficiency of 54%. The laser linewidth is 0.5 nm. The spectrum at 98 W indicates that ASE and parasitic lasing are suppressed effectively. (letter)

  16. Junction detection and pathway selection

    Science.gov (United States)

    Peck, Alex N.; Lim, Willie Y.; Breul, Harry T.

    1992-02-01

    The ability to detect junctions and make choices among the possible pathways is important for autonomous navigation. In our script-based navigation approach where a journey is specified as a script of high-level instructions, actions are frequently referenced to junctions, e.g., `turn left at the intersection.' In order for the robot to carry out these kind of instructions, it must be able (1) to detect an intersection (i.e., an intersection of pathways), (2) know that there are several possible pathways it can take, and (3) pick the pathway consistent with the high level instruction. In this paper we describe our implementation of the ability to detect junctions in an indoor environment, such as corners, T-junctions and intersections, using sonar. Our approach uses a combination of partial scan of the local environment and recognition of sonar signatures of certain features of the junctions. In the case where the environment is known, we use additional sensor information (such as compass bearings) to help recognize the specific junction. In general, once a junction is detected and its type known, the number of possible pathways can be deduced and the correct pathway selected. Then the appropriate behavior for negotiating the junction is activated.

  17. Broadband optically controlled switching effect in a microfluid-filled photonic bandgap fiber

    International Nuclear Information System (INIS)

    Guo, Junqi; Liu, Yan-ge; Wang, Zhi; Luo, Mingming; Huang, Wei; Liu, Xiaoqi; Han, Tingting

    2016-01-01

    Broadband optically controlled switching in a microfluid-filled photonic bandgap fiber (MF-PBGF) was observed and investigated. The MF-PBGF was formed by infusing a temperature-sensitive high-index fluid into all of the cladding holes of a microstructured optical fiber (MOF). The fiber was then side pumped with a 532 nm continuous wave laser. An extinction ratio of greater than 20 dB at most of the bandgap wavelengths (more than 200 nm) was obtained with a switching power of ∼147 mW. Theoretical and experimental investigations revealed that the effect originated from changes in the temperature gradient induced by heat absorption of the fiber coating with laser illumination. These investigations offer a new and simple approach to achieve wideband and flexible all-optical fiber switching devices without using any photosensitive materials. (paper)

  18. Architectural Engineering to Super-Light Structures

    DEFF Research Database (Denmark)

    Castberg, Niels Andreas

    The increasing global urbanisation creates a great demand for new buildings. In the aim to honour this, a new structural system, offering flexibility and variation at no extra cost appears beneficial. Super-Light Structures constitute such a system. This PhD thesis examines Super-Light Structures...... with architectural engineering as a starting point. The thesis is based on a two stringed hypothesis: Architectural engineering gives rise to better architecture and Super-Light Structures support and enables a static, challenging architecture. The aim of the thesis is to clarify architectural engineering's impact...... on the work process between architects and engineers in the design development. Using architectural engineering, Super-Light Structures are examined in an architectural context, and it is explained how digital tools can support architectural engineering and design of Super-Light Structures. The experiences...

  19. Analysis of multifunctional piezoelectric metastructures for low-frequency bandgap formation and energy harvesting

    Science.gov (United States)

    Sugino, C.; Erturk, A.

    2018-05-01

    Vibration-based energy harvesting is a growing field for generating low-power electricity to use in wireless electronic devices, such as the sensor networks used in structural health monitoring applications. Locally resonant metastructures, which are structures that comprise locally resonant metamaterial components, enable bandgap formation at wavelengths much longer than the lattice size, for critical applications such as low-frequency vibration attenuation in flexible structures. This work aims to bridge the domains of energy harvesting and locally resonant metamaterials to form multifunctional structures that exhibit both low-power electricity generation and vibration attenuation capabilities. A fully coupled electromechanical modeling framework is developed for two characteristic systems and their modal analysis is presented. Simulations are performed to explore the vibration and electrical power frequency response maps for varying electrical load resistance, and optimal loading conditions are presented. Case studies are presented to understand the interaction of bandgap formation and energy harvesting capabilities of this new class of multifunctional energy-harvesting locally resonant metastructures. It is shown that useful energy can be harvested from locally resonant metastructures without significantly diminishing their dramatic vibration attenuation in the locally resonant bandgap. Thus, integrating energy harvesters into a locally resonant metastructure enables a new potential for multifunctional locally resonant metastructures that can host self-powered sensors.

  20. Supramolecular tunneling junctions

    NARCIS (Netherlands)

    Wimbush, K.S.

    2012-01-01

    In this study a variety of supramolecular tunneling junctions were created. The basis of these junctions was a self-assembled monolayer of heptathioether functionalized ß-cyclodextrin (ßCD) formed on an ultra-flat Au surface, i.e., the bottom electrode. This gave a well-defined hexagonally packed

  1. Physical ageing in the above-bandgap photoexposured glassy arsenic selenides

    Energy Technology Data Exchange (ETDEWEB)

    Kozdras, A [Faculty of Physics of Opole University of Technology, 75, Ozimska str., Opole, PL-45370 (Poland); Golovchak, R [Lviv Scientific Research Institute of Materials of SRC ' Carat' , 202, Stryjska str., Lviv, UA-79031 (Ukraine); Shpotyuk, O [Lviv Scientific Research Institute of Materials of SRC ' Carat' , 202, Stryjska str., Lviv, UA-79031 (Ukraine)

    2007-08-15

    Physical ageing induced by above-bandgap light illumination is studied in glassy As-Se using differential scanning calorimetry. It is shown that measurable effect like to known short-term physical ageing is observed only in Se-rich glasses. The kinetics of this effect is compared with that caused by natural storage in a dark.

  2. Physical ageing in the above-bandgap photoexposured glassy arsenic selenides

    International Nuclear Information System (INIS)

    Kozdras, A; Golovchak, R; Shpotyuk, O

    2007-01-01

    Physical ageing induced by above-bandgap light illumination is studied in glassy As-Se using differential scanning calorimetry. It is shown that measurable effect like to known short-term physical ageing is observed only in Se-rich glasses. The kinetics of this effect is compared with that caused by natural storage in a dark

  3. Phase diagrams of particles with dissimilar patches: X-junctions and Y-junctions

    International Nuclear Information System (INIS)

    Tavares, J M; Teixeira, P I C

    2012-01-01

    We use Wertheim’s first-order perturbation theory to investigate the phase behaviour and the structure of coexisting fluid phases for a model of patchy particles with dissimilar patches (two patches of type A and f B patches of type B). A patch of type α = {A,B} can bond to a patch of type β = {A,B} in a volume v αβ , thereby decreasing the internal energy by ε αβ . We analyse the range of model parameters where AB bonds, or Y-junctions, are energetically disfavoured (ε AB AA /2) but entropically favoured (v AB ≫ v αα ), and BB bonds, or X-junctions, are energetically favoured (ε BB > 0). We show that, for low values of ε BB /ε AA , the phase diagram has three different regions: (i) close to the critical temperature a low-density liquid composed of long chains and rich in Y-junctions coexists with a vapour of chains; (ii) at intermediate temperatures there is coexistence between a vapour of short chains and a liquid of very long chains with X- and Y-junctions; (iii) at low temperatures an ideal gas coexists with a high-density liquid with all possible AA and BB bonds formed. It is also shown that in region (i) the liquid binodal is reentrant (its density decreases with decreasing temperature) for the lower values of ε BB /ε AA . The existence of these three regions is a consequence of the competition between the formation of X- and Y-junctions: X-junctions are energetically favoured and thus dominate at low temperatures, whereas Y-junctions are entropically favoured and dominate at higher temperatures. (paper)

  4. Copper-organic/octamolybdates: structures, bandgap sizes, and photocatalytic activities.

    Science.gov (United States)

    Luo, Lan; Lin, Haisheng; Li, Le; Smirnova, Tatyana I; Maggard, Paul A

    2014-04-07

    The structures, optical bandgap sizes, and photocatalytic activities are described for three copper-octamolybdate hybrid solids prepared using hydrothermal methods, [Cu(pda)]4[β-Mo8O26] (I; pda = pyridazine), [Cu(en)2]2[γ-Mo8O26] (II; en = ethylenediamine), and [Cu(o-phen)2]2[α-Mo8O26] (III; o-phen = o-phenanthroline). The structure of I consists of a [Cu(pda)]4(4+) tetramer that bridges to neighboring [β-Mo8O26](4-) octamolybdate clusters to form two-dimensional layers that stack along the a axis. The previously reported structures of II and III are constructed from [Cu2(en)4Mo8O26] and [Cu2(o-phen)4Mo8O26] clusters. The optical bandgap sizes were measured by UV-vis diffuse reflectance techniques to be ∼1.8 eV for I, ∼3.1 eV for II, and ∼3.0 eV for III. Electronic structure calculations show that the smaller bandgap size of I originates primarily from an electronic transition between the valence and conduction band edges comprised of filled 3d(10) orbitals on Cu(I) and empty 4d(0) orbitals on Mo(VI). Both II and III contain Cu(II) and exhibit larger bandgap sizes. Accordingly, aqueous suspensions of I exhibit visible-light photocatalytic activity for the production of oxygen at a rate of ∼90 μmol O2 g(-1) h(-1) (10 mg samples; radiant power density of ∼1 W/cm(2)) and a turnover frequency per calculated surface [Mo8O26](4-) cluster of ∼36 h(-1). Under combined ultraviolet and visible-light irradiation, I also exhibits photocatalytic activity for hydrogen production in 20% aqueous methanol of ∼316 μmol H2 g(-1) h(-1). By contrast, II decomposed during the photocatalysis measurements. The molecular [Cu2(o-phen)4(α-Mo8O26)] clusters of III dissolve into the aqueous methanol solution under ultraviolet irradiation and exhibit homogeneous photocatalytic rates for hydrogen production of up to ∼8670 μmol H2·g(-1) h(-1) and a turnover frequency of 17 h(-1). The clusters of III can be precipitated out by evaporation and redispersed into solution with

  5. Space-coiling fractal metamaterial with multi-bandgaps on subwavelength scale

    Science.gov (United States)

    Man, Xianfeng; Liu, Tingting; Xia, Baizhan; Luo, Zhen; Xie, Longxiang; Liu, Jian

    2018-06-01

    Acoustic metamaterials are remarkably different from conventional materials, as they can flexibly manipulate and control the propagation of sound waves. Unlike the locally resonant metamaterials introduced in earlier studies, we designed an ultraslow artificial structure with a sound speed much lower than that in air. In this paper, the space-coiling approach is proposed for achieving artificial metamaterial for extremely low-frequency airborne sound. In addition, the self-similar fractal technique is utilized for designing space-coiling Mie-resonance-based metamaterials (MRMMs) to obtain a band-dispersive spectrum. The band structures of two-dimensional (2D) acoustic metamaterials with different fractal levels are illustrated using the finite element method. The low-frequency bandgap can easily be formed, and multi-bandgap properties are observed in high-level fractals. Furthermore, the designed MRMMs with higher order fractal space coiling shows a good robustness against irregular arrangement. Besides, the proposed artificial structure was found to modify and control the radiation field arbitrarily. Thus, this work provides useful guidelines for the design of acoustic filtering devices and acoustic wavefront shaping applications on the subwavelength scale.

  6. Detecting Water on Super-Earths Using JAVST

    Science.gov (United States)

    Deming, D.

    2010-01-01

    Nearby lower train sequence stars host a class of planets known as Super-Earths, that have no analog in our own solar system. Super-Earths are rocky and/or icy planets with masses up to about 10 Earth masses, They are expected to host atmospheres generated by a number of processes including accretion of chondritic material. Water vapor should be a common constituent of super-Earth atmospheres, and may be detectable in transiting super-Earths using transmission spectroscopy during primar y eclipse, and emission spectroscopy at secondary eclipse. I will discuss the prospects for super-Earth atmospheric measurements using JWST.

  7. Supergrassmannians, super τ-functions and strings

    International Nuclear Information System (INIS)

    Dolgikh, S.N.; Schwarz, A.S.

    1989-03-01

    Recently, infinite-dimensional grassmannians and their supergeneralizations were used to study conformal two-dimensional fields and strings. In particular, the super Mumford form (holomorphic square root from the superstring measure on moduli space) was expressed through super analog of Sato τ-function. In this paper we present results of supergrassmannians and super τ-functions. 8 refs

  8. Toolbox for super-structured and super-structure free multi-disciplinary building spatial design optimisation

    NARCIS (Netherlands)

    Boonstra, S.; van der Blom, K.; Hofmeyer, H.; Emmerich, M.T.M.; van Schijndel, A.W.M.; de Wilde, P.

    2018-01-01

    Multi-disciplinary optimisation of building spatial designs is characterised by large solution spaces. Here two approaches are introduced, one being super-structured and the other super-structure free. Both are different in nature and perform differently for large solution spaces and each requires

  9. Quantum state propagation in linear photonic bandgap structures

    International Nuclear Information System (INIS)

    Severini, S; Tricca, D; Sibilia, C; Bertolotti, M; Perina, Jan

    2004-01-01

    In this paper we investigate the propagation of a generic quantum state in a corrugated waveguide, which reproduces a photonic bandgap structure. We find the conditions that assure the outcoming state to preserve the quantum properties of the incoming state. Then, focusing on a particular quantum state (realized by two counter-propagating coherent states), we study the possibility of preserving the quantum properties of this particular double coherent state even in the presence of absorption phenomena during propagation in the structure

  10. Common features of a vortex structure in long exponentially shaped Josephson junctions and Josephson junctions with inhomogeneities

    International Nuclear Information System (INIS)

    Boyadjiev, T.L.; Semerdjieva, E.G.; Shukrinov, Yu.M.

    2007-01-01

    We study the vortex structure in three different models of the long Josephson junction: the exponentially shaped Josephson junction and the Josephson junctions with the resistor and the shunt inhomogeneities in the barrier layer. For these three models the critical curves 'critical current-magnetic field' are numerically constructed. We develop the idea of the equivalence of the exponentially shaped Josephson junction and the rectangular junction with the distributed inhomogeneity and demonstrate that at some parameters of the shunt and the resistor inhomogeneities in the ends of the junction the corresponding critical curves are very close to the exponentially shaped one

  11. Super-Acceleration in the Flaring Crab Nebula

    Energy Technology Data Exchange (ETDEWEB)

    Tavani, Marco, E-mail: marco.tavani@inaf.it

    2013-10-15

    The Crab Nebula continues to surprise us. The Crab system (energized by a very powerful pulsar at the center of the Supernova Remnant SN1054) is known to be a very efficient particle “accelerator” which can reach PeV energies. Today, new surprising data concerning the gamma-ray flares produced by the Crab Nebula challenge models of particle acceleration. The total energy flux from the Crab has been considered for many decades substantially stable at X-ray and gamma-ray energies. However, this paradigm was shattered by the AGILE discovery and Fermi confirmation in September 2010 of transient gamma-ray emission from the Crab. Indeed, we can state that four major flaring gamma-ray episodes have been detected by AGILE and Fermi during the period mid-2007/2012. During these events, transient particle acceleration occurs in a regime which apparently violates the MHD conditions and synchrotron cooling constraints. This fact justifies calling “super-acceleration” the mechanism which produces the “flaring Crab phenomenon”. Radiation between 50 MeV and a few GeV is emitted with a quite hard spectrum within a short timescale (hours-days), with no obvious relation with simultaneous optical and X-ray emissions in the inner Nebula. “Super-acceleration” implies overcoming synchrotron cooling by strong (and “parallel”) electric fields most likely produced by magnetic field reconnection within the pulsar wind outflow. This acceleration appears to be very efficient and, remarkably, limited by radiation reaction. It is not clear at the moment where in the Nebula this phenomenon occurs. An intense observational program is now focused on the Crab Nebula to resolve its most challenging mystery.

  12. Super Virasoro algebra and solvable supersymmetric quantum field theories

    International Nuclear Information System (INIS)

    Yamanaka, Itaru; Sasaki, Ryu.

    1987-09-01

    Interesting and deep relationships between super Virasoro algebras and super soliton systems (super KdV, super mKdV and super sine-Gordon equations) are investigated at both classical and quantum levels. An infinite set of conserved quantities responsible for solvability is characterized by super Virasoro algebras only. Several members of the infinite set of conserved quantities are derived explicitly. (author)

  13. Modification of structure and optical band-gap of nc-Si:H films with ion irradiation

    International Nuclear Information System (INIS)

    Zhu Yabin; Wang Zhiguang; Sun Jianrong; Yao Cunfeng; Shen Tielong; Li Bingsheng; Wei Kongfang; Pang Lilong; Sheng Yanbin; Cui Minghuan; Li Yuanfei; Wang Ji; Zhu Huiping

    2012-01-01

    Hydrogenated nano-crystalline silicon (nc-Si:H) films fabricated by using hot-wire chemical vapor deposition are irradiated at room temperature with 6.0 MeV Xe-ions. The irradiation fluences are 1.0 × 10 13 , 5.0 × 10 13 and 1.0 × 10 14 Xe-ions/cm 2 . The structure and optical band-gap of the irradiated films varying with ion fluence are investigated by means of X-ray diffraction, Raman and UV–Vis–NIR spectroscopes, as well as transmission electron microscopy. It is found that the crystallite size, the crystalline fraction and the optical band-gap decrease continuously with increasing the ion fluence. The crystalline fraction of the films irradiated to the fluences from 0 to 1.0 × 10 14 Xe-ions/cm 2 decreases from about 65.7% to 2.9% and the optical band-gap decreases from about 2.1 to 1.6 eV. Possible origins of the modification of the nc-Si:H films under 6.0 MeV Xe-ions irradiation are briefly discussed.

  14. On the mechanism of bandgap formation in locally resonant finite elastic metamaterials

    Science.gov (United States)

    Sugino, Christopher; Leadenham, Stephen; Ruzzene, Massimo; Erturk, Alper

    2016-10-01

    Elastic/acoustic metamaterials made from locally resonant arrays can exhibit bandgaps at wavelengths much longer than the lattice size for various applications spanning from low-frequency vibration/sound attenuation to wave guiding and filtering in mechanical and electromechanical devices. For an effective use of such locally resonant metamaterial concepts in finite structures, it is required to bridge the gap between the lattice dispersion characteristics and modal behavior of the host structure with its resonators. To this end, we develop a novel argument for bandgap formation in finite-length elastic metamaterial beams, relying on the modal analysis and the assumption of infinitely many resonators. We show that the dual problem to wave propagation through an infinite periodic beam is the modal analysis of a finite beam with an infinite number of resonators. A simple formula that depends only on the resonator natural frequency and total mass ratio is derived for placing the bandgap in a desired frequency range, yielding an analytical insight and a rule of thumb for design purposes. A method for understanding the importance of a resonator location and mass is discussed in the context of a Riemann sum approximation of an integral, and a method for determining the optimal number of resonators for a given set of boundary conditions and target frequency is introduced. The simulations of the theoretical framework are validated by experiments for bending vibrations of a locally resonant cantilever beam.

  15. Fabrication and characterization of an all-solid tellurite-phosphate photonic bandgap fiber.

    Science.gov (United States)

    Cheng, Tonglei; Sakai, Yukiko; Suzuki, Takenobu; Ohishi, Yasutake

    2015-05-01

    We present an all-solid tellurite-phosphate photonic bandgap fiber (PBGF) with two layers of high-index rods (TeO2-Li2O-WO3-MoO3-Nb2O5, TLWMN) in the cladding (TeO2-ZnO-Li2O-K2O-Al2O3-P2O5, TZLKAP). TLWMN and TZLKAP glasses have good compatibility for fabricating the all-solid PBGF. Photonic bandgap (PBG) properties are calculated by the plane wave expansion method (PWM), and the results agree well with the measured transmission spectrum. Furthermore, the modal field patterns are measured at ∼1300 and 1520 nm, respectively. The light is confined to the core at ∼1300  nm and lost in the cladding at ∼1520  nm, which match well with the calculated modal field intensities.

  16. Behavior of tight-junction, adherens-junction and cell polarity proteins during HNF-4α-induced epithelial polarization

    International Nuclear Information System (INIS)

    Satohisa, Seiro; Chiba, Hideki; Osanai, Makoto; Ohno, Shigeo; Kojima, Takashi; Saito, Tsuyoshi; Sawada, Norimasa

    2005-01-01

    We previously reported that expression of tight-junction molecules occludin, claudin-6 and claudin-7, as well as establishment of epithelial polarity, was triggered in mouse F9 cells expressing hepatocyte nuclear factor (HNF)-4α [H. Chiba, T. Gotoh, T. Kojima, S. Satohisa, K. Kikuchi, M. Osanai, N. Sawada. Hepatocyte nuclear factor (HNF)-4α triggers formation of functional tight junctions and establishment of polarized epithelial morphology in F9 embryonal carcinoma cells, Exp. Cell Res. 286 (2003) 288-297]. Using these cells, we examined in the present study behavior of tight-junction, adherens-junction and cell polarity proteins and elucidated the molecular mechanism behind HNF-4α-initiated junction formation and epithelial polarization. We herein show that not only ZO-1 and ZO-2, but also ZO-3, junctional adhesion molecule (JAM)-B, JAM-C and cell polarity proteins PAR-3, PAR-6 and atypical protein kinase C (aPKC) accumulate at primordial adherens junctions in undifferentiated F9 cells. In contrast, CRB3, Pals1 and PATJ appeared to exhibit distinct subcellular localization in immature cells. Induced expression of HNF-4α led to translocation of these tight-junction and cell polarity proteins to beltlike tight junctions, where occludin, claudin-6 and claudin-7 were assembled, in differentiated cells. Interestingly, PAR-6, aPKC, CRB3 and Pals1, but not PAR-3 or PATJ, were also concentrated on the apical membranes in differentiated cells. These findings indicate that HNF-4α provokes not only expression of tight-junction adhesion molecules, but also modulation of subcellular distribution of junction and cell polarity proteins, resulting in junction formation and epithelial polarization

  17. Flexible 2D layered material junctions

    Science.gov (United States)

    Balabai, R.; Solomenko, A.

    2018-03-01

    Within the framework of the methods of the electron density functional and the ab initio pseudopotential, we have obtained the valence electron density spatial distribution, the densities of electron states, the widths of band gaps, the charges on combined regions, and the Coulomb potentials for graphene-based flexible 2D layered junctions, using author program complex. It is determined that the bending of the 2D layered junctions on the angle α leads to changes in the electronic properties of these junctions. In the graphene/graphane junction, there is clear charge redistribution with different signs in the regions of junctions. The presence in the heterojunctions of charge regions with different signs leads to the formation of potential barriers. The greatest potential jump is in the graphene/fluorographene junction. The greatest value of the band gap width is in the graphene/graphane junction.

  18. The Dissolution of Double Holliday Junctions

    DEFF Research Database (Denmark)

    Bizard, Anna H; Hickson, Ian D

    2014-01-01

    as "double Holliday junction dissolution." This reaction requires the cooperative action of a so-called "dissolvasome" comprising a Holliday junction branch migration enzyme (Sgs1/BLM RecQ helicase) and a type IA topoisomerase (Top3/TopoIIIα) in complex with its OB (oligonucleotide/oligosaccharide binding......Double Holliday junctions (dHJS) are important intermediates of homologous recombination. The separate junctions can each be cleaved by DNA structure-selective endonucleases known as Holliday junction resolvases. Alternatively, double Holliday junctions can be processed by a reaction known......) fold containing accessory factor (Rmi1). This review details our current knowledge of the dissolution process and the players involved in catalyzing this mechanistically complex means of completing homologous recombination reactions....

  19. Photonic bandgap structure of 3-D fcc silica nanospheres

    Energy Technology Data Exchange (ETDEWEB)

    Woo, Y. K.; Ha, N. Y.; Hwang, Ji Soo; Chang, H. J.; Wu, J. W. [Dept. of Physics, Ewha Womans University, Seoul (Korea, Republic of)

    2002-07-01

    Photonic crystal is an artificial optical material with a periodic dielectric potential, hence exhibiting a bandgap for a propagating electromagnetic wave. We fabricated crystal possessing 3-D fcc opal structure from silica nanospheres. The crystals are self-assembled on a flat glass by evaporating the solvent in the nanosphere suspension at the room temperature. The suspension consists of silica nanospheres with a diameter of 200 nm. The microscopic arrangement of nanospheres is identified by a scanning electron microscope, the resulting structure being fcc.Transmission spectrum of the fabricated photonic crystal in the visible and near-infrared regions is measured at different incident angles to find the distinct Bragg peaks, analysis of which further confirmed the fcc structure of the photonic crystal. From the optical microscopic image, we find that the opal domain varies from 30 μm to 125 μm in size. In order to relate the observed Bragg peaks with the microscopic arrangement of silica nanospheres, we introduced the scalar wave approximation, where the electric field in the medium is treated as a scalar rather than a vector quantity. It is found that the theoretical prediction of the position of bandgap is in a good agreement with the experimental measurement.

  20. Photonic bandgap structure of 3-D fcc silica nanospheres

    International Nuclear Information System (INIS)

    Woo, Y. K.; Ha, N. Y.; Hwang, Ji Soo; Chang, H. J.; Wu, J. W.

    2002-01-01

    Photonic crystal is an artificial optical material with a periodic dielectric potential, hence exhibiting a bandgap for a propagating electromagnetic wave. We fabricated crystal possessing 3-D fcc opal structure from silica nanospheres. The crystals are self-assembled on a flat glass by evaporating the solvent in the nanosphere suspension at the room temperature. The suspension consists of silica nanospheres with a diameter of 200 nm. The microscopic arrangement of nanospheres is identified by a scanning electron microscope, the resulting structure being fcc.Transmission spectrum of the fabricated photonic crystal in the visible and near-infrared regions is measured at different incident angles to find the distinct Bragg peaks, analysis of which further confirmed the fcc structure of the photonic crystal. From the optical microscopic image, we find that the opal domain varies from 30 μm to 125 μm in size. In order to relate the observed Bragg peaks with the microscopic arrangement of silica nanospheres, we introduced the scalar wave approximation, where the electric field in the medium is treated as a scalar rather than a vector quantity. It is found that the theoretical prediction of the position of bandgap is in a good agreement with the experimental measurement.

  1. Is Quantum Gravity a Super-Quantum Theory?

    OpenAIRE

    Chang, Lay Nam; Lewis, Zachary; Minic, Djordje; Takeuchi, Tatsu

    2013-01-01

    We argue that quantum gravity should be a super-quantum theory, that is, a theory whose non-local correlations are stronger than those of canonical quantum theory. As a super-quantum theory, quantum gravity should display distinct experimentally observable super-correlations of entangled stringy states.

  2. Nanoscale probing of bandgap states on oxide particles using electron energy-loss spectroscopy.

    Science.gov (United States)

    Liu, Qianlang; March, Katia; Crozier, Peter A

    2017-07-01

    Surface and near-surface electronic states were probed with nanometer spatial resolution in MgO and TiO 2 anatase nanoparticles using ultra-high energy resolution electron energy-loss spectroscopy (EELS) coupled to a scanning transmission electron microscope (STEM). This combination allows the surface electronic structure determined with spectroscopy to be correlated with nanoparticle size, morphology, facet etc. By acquiring the spectra in aloof beam mode, radiation damage to the surface can be significantly reduced while maintaining the nanometer spatial resolution. MgO and TiO 2 showed very different bandgap features associated with the surface/sub-surface layer of the nanoparticles. Spectral simulations based on dielectric theory and density of states models showed that a plateau feature found in the pre-bandgap region in the spectra from (100) surfaces of 60nm MgO nanocubes is consistent with a thin hydroxide surface layer. The spectroscopy shows that this hydroxide species gives rise to a broad filled surface state at 1.1eV above the MgO valence band. At the surfaces of TiO 2 nanoparticles, pronounced peaks were observed in the bandgap region, which could not be well fitted to defect states. In this case, the high refractive index and large particle size may make Cherenkov or guided light modes the likely causes of the peaks. Copyright © 2016 Elsevier B.V. All rights reserved.

  3. Learning from errors in super-resolution.

    Science.gov (United States)

    Tang, Yi; Yuan, Yuan

    2014-11-01

    A novel framework of learning-based super-resolution is proposed by employing the process of learning from the estimation errors. The estimation errors generated by different learning-based super-resolution algorithms are statistically shown to be sparse and uncertain. The sparsity of the estimation errors means most of estimation errors are small enough. The uncertainty of the estimation errors means the location of the pixel with larger estimation error is random. Noticing the prior information about the estimation errors, a nonlinear boosting process of learning from these estimation errors is introduced into the general framework of the learning-based super-resolution. Within the novel framework of super-resolution, a low-rank decomposition technique is used to share the information of different super-resolution estimations and to remove the sparse estimation errors from different learning algorithms or training samples. The experimental results show the effectiveness and the efficiency of the proposed framework in enhancing the performance of different learning-based algorithms.

  4. Tunable polarisation-maintaining filter based on liquid crystal photonic bandgap fibre

    DEFF Research Database (Denmark)

    Scolari, Lara; Olausson, Christina Bjarnal Thulin; Weirich, Johannes

    2008-01-01

    A tunable and polarisation-maintaining all-in-fibre filter based on a liquid crystal photonic bandgap fibre is demonstrated. Its polarisation extinction ratio reaches 14 dB at 1550 nm wavelength. Its spectral tunability range spans over 250 nm in the temperature range 30–70°C. The measured...

  5. Superparticle on the 'super' Poincare upper half plane

    Energy Technology Data Exchange (ETDEWEB)

    Uehara, S; Yasui, Yukinora

    1988-03-17

    A non-relativistic superparticle moving freely on the 'super' Poincare upper half plane is investigated. The lagrangian is invariant under the super Moebius transformations SPL (2, R), so that it can be projected into the lagrangian on the super Riemann surface. The quantum hamiltonian becomes the 'super' Laplace-Beltrami operator in the curved superspace.

  6. Super boson-fermion correspondence

    International Nuclear Information System (INIS)

    Kac, V.G.; Leur van de, J.W.

    1987-01-01

    Since the pioneering work of Skyrme, the boson-fermion correspondence has been playing an increasingly important role in 2-dimensional quantum field theory. More recently, it has become an important ingredient in the work of the Kyoto school on the KP hierarchy of soliton equations. In the present paper we establish a super boson-fermion correspondence, having in mind its applications to super KP hierarchies

  7. Ultimately short ballistic vertical graphene Josephson junctions

    Science.gov (United States)

    Lee, Gil-Ho; Kim, Sol; Jhi, Seung-Hoon; Lee, Hu-Jong

    2015-01-01

    Much efforts have been made for the realization of hybrid Josephson junctions incorporating various materials for the fundamental studies of exotic physical phenomena as well as the applications to superconducting quantum devices. Nonetheless, the efforts have been hindered by the diffusive nature of the conducting channels and interfaces. To overcome the obstacles, we vertically sandwiched a cleaved graphene monoatomic layer as the normal-conducting spacer between superconducting electrodes. The atomically thin single-crystalline graphene layer serves as an ultimately short conducting channel, with highly transparent interfaces with superconductors. In particular, we show the strong Josephson coupling reaching the theoretical limit, the convex-shaped temperature dependence of the Josephson critical current and the exceptionally skewed phase dependence of the Josephson current; all demonstrate the bona fide short and ballistic Josephson nature. This vertical stacking scheme for extremely thin transparent spacers would open a new pathway for exploring the exotic coherence phenomena occurring on an atomic scale. PMID:25635386

  8. The Solution Construction of Heterotic Super-Liouville Model

    Science.gov (United States)

    Yang, Zhan-Ying; Zhen, Yi

    2001-12-01

    We investigate the heterotic super-Liouville model on the base of the basic Lie super-algebra Osp(1|2).Using the super extension of Leznov-Saveliev analysis and Drinfeld-Sokolov linear system, we construct the explicit solution of the heterotic super-Liouville system in component form. We also show that the solutions are local and periodic by calculating the exchange relation of the solution. Finally starting from the action of heterotic super-Liouville model, we obtain the conserved current and conserved charge which possessed the BRST properties.

  9. Super-radiance in Nuclear Physics

    International Nuclear Information System (INIS)

    Auerbach, N

    2015-01-01

    The theory of the super-radiant mechanism as applied to various phenomena in nuclear physics is presented. The connection between super-radiance and the notion of doorway is presented. The statistics of resonance widths in a many-body Fermi system with open channels is discussed. Depending on the strength of the coupling to the continuum such systems show deviations from the standard Porter-Thomas distribution. The deviations result from the process of increasing interaction of the intrinsic states via the common decay channels. In the limit of very strong coupling this leads to super-radiance. (paper)

  10. A model for the direct-to-indirect band-gap transition in monolayer ...

    Indian Academy of Sciences (India)

    Abstract. A monolayer of MoSe2 is found to be a direct band-gap semiconductor. We show, ... In order to determine appropriate basis for the tight-binding model, the Mo and Se ..... RD thanks the Council of Scientific and Industrial Research.

  11. Super-hydrophobic surfaces of SiO₂-coated SiC nanowires: fabrication, mechanism and ultraviolet-durable super-hydrophobicity.

    Science.gov (United States)

    Zhao, Jian; Li, Zhenjiang; Zhang, Meng; Meng, Alan

    2015-04-15

    The interest in highly water-repellent surfaces of SiO2-coated SiC nanowires has grown in recent years due to the desire for self-cleaning and anticorrosive surfaces. It is imperative that a simple chemical treatment with fluoroalkylsilane (FAS, CF3(CF2)7CH2CH2Si(OC2H5)3) in ethanol solution at room temperature resulted in super-hydrophobic surfaces of SiO2-coated SiC nanowires. The static water contact angle of SiO2-coated SiC nanowires surfaces was changed from 0° to 153° and the morphology, microstructure and crystal phase of the products were almost no transformation before and after super-hydrophobic treatment. Moreover, a mechanism was expounded reasonably, which could elucidate the reasons for their super-hydrophobic behavior. It is important that the super-hydrophobic surfaces of SiO2-coated SiC nanowires possessed ultraviolet-durable (UV-durable) super-hydrophobicity. Copyright © 2014 Elsevier Inc. All rights reserved.

  12. Performing the Super Instrument

    DEFF Research Database (Denmark)

    Kallionpaa, Maria

    2016-01-01

    can empower performers by producing super instrument works that allow the concert instrument to become an ensemble controlled by a single player. The existing instrumental skills of the performer can be multiplied and the qualities of regular acoustic instruments extended or modified. Such a situation......The genre of contemporary classical music has seen significant innovation and research related to new super, hyper, and hybrid instruments, which opens up a vast palette of expressive potential. An increasing number of composers, performers, instrument designers, engineers, and computer programmers...... have become interested in different ways of “supersizing” acoustic instruments in order to open up previously-unheard instrumental sounds. Super instruments vary a great deal but each has a transformative effect on the identity and performance practice of the performing musician. Furthermore, composers...

  13. Molecular electronic junction transport

    DEFF Research Database (Denmark)

    Solomon, Gemma C.; Herrmann, Carmen; Ratner, Mark

    2012-01-01

    Whenasinglemolecule,oracollectionofmolecules,isplacedbetween two electrodes and voltage is applied, one has a molecular transport junction. We discuss such junctions, their properties, their description, and some of their applications. The discussion is qualitative rather than quantitative, and f...

  14. Gap junctions and motor behavior

    DEFF Research Database (Denmark)

    Kiehn, Ole; Tresch, Matthew C.

    2002-01-01

    The production of any motor behavior requires coordinated activity in motor neurons and premotor networks. In vertebrates, this coordination is often assumed to take place through chemical synapses. Here we review recent data suggesting that electrical gap-junction coupling plays an important role...... in coordinating and generating motor outputs in embryonic and early postnatal life. Considering the recent demonstration of a prevalent expression of gap-junction proteins and gap-junction structures in the adult mammalian spinal cord, we suggest that neuronal gap-junction coupling might also contribute...... to the production of motor behavior in adult mammals....

  15. GW quasiparticle bandgaps of anatase TiO2 starting from DFT + U.

    Science.gov (United States)

    Patrick, Christopher E; Giustino, Feliciano

    2012-05-23

    We investigate the quasiparticle band structure of anatase TiO(2), a wide gap semiconductor widely employed in photovoltaics and photocatalysis. We obtain GW quasiparticle energies starting from density-functional theory (DFT) calculations including Hubbard U corrections. Using a simple iterative procedure we determine the value of the Hubbard parameter yielding a vanishing quasiparticle correction to the fundamental bandgap of anatase TiO(2). The bandgap (3.3 eV) calculated using this optimal Hubbard parameter is smaller than the value obtained by applying many-body perturbation theory to standard DFT eigenstates and eigenvalues (3.7 eV). We extend our analysis to the rutile polymorph of TiO(2) and reach similar conclusions. Our work highlights the role of the starting non-interacting Hamiltonian in the calculation of GW quasiparticle energies in TiO(2) and suggests an optimal Hubbard parameter for future calculations.

  16. Spectroscopic studies on novel donor-acceptor and low band-gap polymeric semiconductors

    International Nuclear Information System (INIS)

    Cravino, A.

    2002-11-01

    Novel low band-gap conjugated polymeric semiconductors as well as conjugated electron donor chains carrying electron acceptor substituents were electrochemically prepared and investigated by means of different spectroscopic techniques. Using in situ FTIR and ESR spectroelectrochemistry, the spectroscopic features of injected positive charges are found to be different as opposed to the negative charge carriers on the same conjugated polymer. These results, for which the theoretical models so far developed do not account, demonstrate the different structure and delocalization of charge carriers with opposite signs. In addition, vibrational spectroscopy results proof the enhanced 'quinoid' character of low band-gap conjugated chains. Excited state spectroscopy was applied to study photoexcitations in conjugated polymers carrying tetracyanoanthraquinone type or fullerene moieties. This novel class of materials, hereafter called double-cable polymers, was found promising as alternative to the conjugated polymer:fullerene mixtures currently used for the preparation of 'bulk-heterojunction' polymeric solar cells. (author)

  17. Ab initio study of the bandgap engineering of Al1−xGaxN for optoelectronic applications

    KAUST Repository

    Amin, B.; Ahmad, Iftikhar; Maqbool, M.; Goumri-Said, S.; Ahmad, R.

    2011-01-01

    A theoretical study of Al1−xGaxN, based on the full-potential linearized augmented plane wave method, is used to investigate the variations in the bandgap,optical properties, and nonlinear behavior of the compound with the change in the Ga concentration. It is found that the bandgap decreases with the increase in Ga. A maximum value of 5.50 eV is determined for the bandgap of pure AlN, which reaches a minimum value of 3.0 eV when Al is completely replaced by Ga. The static index of refraction and dielectric constant decreases with the increase in the bandgap of the material, assigning a high index of refraction to pure GaN when compared to pure AlN. The refractive index drops below 1 for higher energy photons, larger than 14 eV. The group velocity of these photons is larger than the vacuum velocity of light. This astonishing result shows that at higher energies the optical properties of the material shifts from linear to nonlinear. Furthermore, frequency dependent reflectivity and absorption coefficients show that peak values of the absorption coefficient and reflectivity shift toward lower energy in the ultraviolet (UV) spectrum with the increase in Ga concentration. This comprehensive theoretical study of the optoelectronic properties predicts that the material can be effectively used in the optical devices working in the visible and UV spectrum.

  18. Ab initio study of the bandgap engineering of Al1−xGaxN for optoelectronic applications

    KAUST Repository

    Amin, B.

    2011-01-19

    A theoretical study of Al1−xGaxN, based on the full-potential linearized augmented plane wave method, is used to investigate the variations in the bandgap,optical properties, and nonlinear behavior of the compound with the change in the Ga concentration. It is found that the bandgap decreases with the increase in Ga. A maximum value of 5.50 eV is determined for the bandgap of pure AlN, which reaches a minimum value of 3.0 eV when Al is completely replaced by Ga. The static index of refraction and dielectric constant decreases with the increase in the bandgap of the material, assigning a high index of refraction to pure GaN when compared to pure AlN. The refractive index drops below 1 for higher energy photons, larger than 14 eV. The group velocity of these photons is larger than the vacuum velocity of light. This astonishing result shows that at higher energies the optical properties of the material shifts from linear to nonlinear. Furthermore, frequency dependent reflectivity and absorption coefficients show that peak values of the absorption coefficient and reflectivity shift toward lower energy in the ultraviolet (UV) spectrum with the increase in Ga concentration. This comprehensive theoretical study of the optoelectronic properties predicts that the material can be effectively used in the optical devices working in the visible and UV spectrum.

  19. Deriving Global Convection Maps From SuperDARN Measurements

    Science.gov (United States)

    Gjerloev, J. W.; Waters, C. L.; Barnes, R. J.

    2018-04-01

    A new statistical modeling technique for determining the global ionospheric convection is described. The principal component regression (PCR)-based technique is based on Super Dual Auroral Radar Network (SuperDARN) observations and is an advanced version of the PCR technique that Waters et al. (https//:doi.org.10.1002/2015JA021596) used for the SuperMAG data. While SuperMAG ground magnetic field perturbations are vector measurements, SuperDARN provides line-of-sight measurements of the ionospheric convection flow. Each line-of-sight flow has a known azimuth (or direction), which must be converted into the actual vector flow. However, the component perpendicular to the azimuth direction is unknown. Our method uses historical data from the SuperDARN database and PCR to determine a fill-in model convection distribution for any given universal time. The fill-in data process is driven by a list of state descriptors (magnetic indices and the solar zenith angle). The final solution is then derived from a spherical cap harmonic fit to the SuperDARN measurements and the fill-in model. When compared with the standard SuperDARN fill-in model, we find that our fill-in model provides improved solutions, and the final solutions are in better agreement with the SuperDARN measurements. Our solutions are far less dynamic than the standard SuperDARN solutions, which we interpret as being due to a lack of magnetosphere-ionosphere inertia and communication delays in the standard SuperDARN technique while it is inherently included in our approach. Rather, we argue that the magnetosphere-ionosphere system has inertia that prevents the global convection from changing abruptly in response to an interplanetary magnetic field change.

  20. Ferromagnetic Josephson Junctions for Cryogenic Memory

    Science.gov (United States)

    Niedzielski, Bethany M.; Gingrich, Eric C.; Khasawneh, Mazin A.; Loloee, Reza; Pratt, William P., Jr.; Birge, Norman O.

    2015-03-01

    Josephson junctions containing ferromagnetic materials are of interest for both scientific and technological purposes. In principle, either the amplitude of the critical current or superconducting phase shift across the junction can be controlled by the relative magnetization directions of the ferromagnetic layers in the junction. Our approach concentrates on phase control utilizing two junctions in a SQUID geometry. We will report on efforts to control the phase of junctions carrying either spin-singlet or spin-triplet supercurrent for cryogenic memory applications. Supported by Northorp Grumman Corporation and by IARPA under SPAWAR Contract N66001-12-C-2017.

  1. Optical bandgap of semiconductor nanostructures: Methods for experimental data analysis

    Science.gov (United States)

    Raciti, R.; Bahariqushchi, R.; Summonte, C.; Aydinli, A.; Terrasi, A.; Mirabella, S.

    2017-06-01

    Determination of the optical bandgap (Eg) in semiconductor nanostructures is a key issue in understanding the extent of quantum confinement effects (QCE) on electronic properties and it usually involves some analytical approximation in experimental data reduction and modeling of the light absorption processes. Here, we compare some of the analytical procedures frequently used to evaluate the optical bandgap from reflectance (R) and transmittance (T) spectra. Ge quantum wells and quantum dots embedded in SiO2 were produced by plasma enhanced chemical vapor deposition, and light absorption was characterized by UV-Vis/NIR spectrophotometry. R&T elaboration to extract the absorption spectra was conducted by two approximated methods (single or double pass approximation, single pass analysis, and double pass analysis, respectively) followed by Eg evaluation through linear fit of Tauc or Cody plots. Direct fitting of R&T spectra through a Tauc-Lorentz oscillator model is used as comparison. Methods and data are discussed also in terms of the light absorption process in the presence of QCE. The reported data show that, despite the approximation, the DPA approach joined with Tauc plot gives reliable results, with clear advantages in terms of computational efforts and understanding of QCE.

  2. A Versatile and Simple Approach to Generate Light Emission in Semiconductors Mediated by Electric Double Layers

    KAUST Repository

    Pu, Jiang

    2017-04-18

    The light-emitting device is the primary device for current light sources. In principle, conventional light-emitting devices need heterostructures and/or intentional carrier doping to form a p-n junction. This junction formation is, however, very difficult to achieve for most emerging semiconductors, and the fabrication of light-emitting devices is invariably a significant challenge. This study proposes a versatile and simple approach to realize light-emitting devices. This proposed device requires only a semiconducting film with two electrodes that are covered with an electrolyte. This unique structure achieves light emission at a voltage slightly larger than the bandgap energy of materials. This study applies this concept to emerging direct bandgap semiconductors, such as transition metal dichalcogenide monolayers and zinc oxide single crystals. These devices generate obvious light emission and provide sufficient evidence of the formation of a dynamic p-i-n junction or tunneling junction, presenting a versatile technique to develop optoelectronic devices.

  3. Electromagnetically induced photonic bandgap in hot Cs atoms

    International Nuclear Information System (INIS)

    Li, D. W.; Zhang, L.; Su, X. M.; Zhuo, Z. C.; Kim, J. B

    2010-01-01

    Three-level Λ-type thermal Cs atoms are used to demonstrate the phenomenon of a photonic bandgap induced by quantum coherence with a standing wave (SW). We observed the transmitted signals of probe field driven by several kinds of SW, which are formed by a strong forward-traveling field and a backward-traveling field when a mirror reflects the forward-traveling beam. Considering Doppler inhomogeneous broadenings with a SW drive, we employ Fourier transformation to solve density-matrix equations for simulation results. The simulation results are found to be consistent with the experimental results.

  4. Electronic noise of superconducting tunnel junction detectors

    International Nuclear Information System (INIS)

    Jochum, J.; Kraus, H.; Gutsche, M.; Kemmather, B.; Feilitzsch, F. v.; Moessbauer, R.L.

    1994-01-01

    The optimal signal to noise ratio for detectors based on superconducting tunnel junctions is calculated and compared for the cases of a detector consisting of one single tunnel junction, as well as of series and of parallel connections of such tunnel junctions. The influence of 1 / f noise and its dependence on the dynamical resistance of tunnel junctions is discussed quantitatively. A single tunnel junction yields the minimum equivalent noise charge. Such a tunnel junction exhibits the best signal to noise ratio if the signal charge is independent of detector size. In case, signal charge increases with detector size, a parallel or a series connection of tunnel junctions would provide the optimum signal to noise ratio. The equivalent noise charge and the respective signal to noise ratio are deduced as functions of tunnel junction parameters such as tunneling time, quasiparticle lifetime, etc. (orig.)

  5. Systematic Bandgap Engineering of Graphene Quantum Dots and Applications for Photocatalytic Water Splitting and CO2 Reduction.

    Science.gov (United States)

    Yan, Yibo; Chen, Jie; Li, Nan; Tian, Jingqi; Li, Kaixin; Jiang, Jizhou; Liu, Jiyang; Tian, Qinghua; Chen, Peng

    2018-04-24

    Graphene quantum dots (GQDs), which is the latest addition to the nanocarbon material family, promise a wide spectrum of applications. Herein, we demonstrate two different functionalization strategies to systematically tailor the bandgap structures of GQDs whereby making them snugly suitable for particular applications. Furthermore, the functionalized GQDs with a narrow bandgap and intramolecular Z-scheme structure are employed as the efficient photocatalysts for water splitting and carbon dioxide reduction under visible light. The underlying mechanisms of our observations are studied and discussed.

  6. The Tunable Bandgap of AB-Stacked Bilayer Graphene on SiO2 with H2O Molecule Adsorption

    International Nuclear Information System (INIS)

    Wang Tao; Guo Qing; Liu Yan; Wang Wen-Bo; Sheng Kuang; Ao Zhi-Min; Yu Bin

    2011-01-01

    The atomic and electronic structures of AB-stacking bilayer graphene (BLG) in the presence of H 2 O molecules are investigated by density functional theory calculations. For free-standing BLG, the bandgap is opened to 0.101 eV with a single H 2 O molecule adsorbed on its surface. The perfectly suspended BLG is sensitive to H 2 O adsorbates, which break the BLG lattice symmetry and open an energy gap. While a single H 2 O molecule is adsorbed on the BLG surface with a SiO 2 substrate, the bandgap widens to 0.363 eV. Both the H 2 O molecule adsorption and the oxide substrate contribute to the BLG bandgap opening. The phenomenon is interpreted with the charge transfer process in 2D carbon nanostructures. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  7. Super-Hamiltonian Structures and Conservation Laws of a New Six-Component Super-Ablowitz-Kaup-Newell-Segur Hierarchy

    Directory of Open Access Journals (Sweden)

    Fucai You

    2014-01-01

    Full Text Available A six-component super-Ablowitz-Kaup-Newell-Segur (-AKNS hierarchy is proposed by the zero curvature equation associated with Lie superalgebras. Supertrace identity is used to furnish the super-Hamiltonian structures for the resulting nonlinear superintegrable hierarchy. Furthermore, we derive the infinite conservation laws of the first two nonlinear super-AKNS equations in the hierarchy by utilizing spectral parameter expansions. PACS: 02.30.Ik; 02.30.Jr; 02.20.Sv.

  8. Effect of ripple taper on band-gap overlap in a coaxial Bragg structure operating at terahertz frequency

    International Nuclear Information System (INIS)

    Ding Xueyong; Li Hongfan; Lv Zhensu

    2012-01-01

    Based on the mode-coupling method, numerical analysis is presented to demonstrate the influence of ripple taper on band-gap overlap in a coaxial Bragg structure operating at terahertz frequency. Results show that the interval between the band-gaps of the competing mode and the desired working mode is narrowed by use of positive-taper ripples, but is expanded if negative-taper ripples are employed, and the influence of the negative-taper ripples is obviously more advantageous than the positive-taper ripples; the band-gap overlap of modes can be efficiently separated by use of negative-taper ripples. The residual side-lobes of the frequency response in a coaxial Bragg structure with ripple taper also can be effectively suppressed by employing the windowing-function technique. These peculiarities provide potential advantage in constructing a coaxial Bragg cavity with high quality factor for single higher-order-mode operation of a high-power free-electron maser in the terahertz frequency range.

  9. Atomic-scaled characterization of graphene PN junctions

    Science.gov (United States)

    Zhou, Xiaodong; Wang, Dennis; Dadgar, Ali; Agnihotri, Pratik; Lee, Ji Ung; Reuter, Mark C.; Ross, Frances M.; Pasupathy, Abhay N.

    Graphene p-n junctions are essential devices for studying relativistic Klein tunneling and the Veselago lensing effect in graphene. We have successfully fabricated graphene p-n junctions using both lithographically pre-patterned substrates and the stacking of vertical heterostructures. We then use our 4-probe STM system to characterize the junctions. The ability to carry out scanning electron microscopy (SEM) in our STM instrument is essential for us to locate and measure the junction interface. We obtain both the topography and dI/dV spectra at the junction area, from which we track the shift of the graphene chemical potential with position across the junction interface. This allows us to directly measure the spatial width and roughness of the junction and its potential barrier height. We will compare the junction properties of devices fabricated by the aforementioned two methods and discuss their effects on the performance as a Veselago lens.

  10. Electronic band-gap modified passive silicon optical modulator at telecommunications wavelengths.

    Science.gov (United States)

    Zhang, Rui; Yu, Haohai; Zhang, Huaijin; Liu, Xiangdong; Lu, Qingming; Wang, Jiyang

    2015-11-13

    The silicon optical modulator is considered to be the workhorse of a revolution in communications. In recent years, the capabilities of externally driven active silicon optical modulators have dramatically improved. Self-driven passive modulators, especially passive silicon modulators, possess advantages in compactness, integration, low-cost, etc. Constrained by a large indirect band-gap and sensitivity-related loss, the passive silicon optical modulator is scarce and has been not advancing, especially at telecommunications wavelengths. Here, a passive silicon optical modulator is fabricated by introducing an impurity band in the electronic band-gap, and its nonlinear optics and applications in the telecommunications-wavelength lasers are investigated. The saturable absorption properties at the wavelength of 1.55 μm was measured and indicates that the sample is quite sensitive to light intensity and has negligible absorption loss. With a passive silicon modulator, pulsed lasers were constructed at wavelengths at 1.34 and 1.42 μm. It is concluded that the sensitive self-driven passive silicon optical modulator is a viable candidate for photonics applications out to 2.5 μm.

  11. Direct-Indirect Nature of the Bandgap in Lead-Free Perovskite Nanocrystals

    KAUST Repository

    Zhang, Yuhai

    2017-06-23

    With record efficiencies achieved in lead halide perovskite-based photovoltaics, urgency has shifted toward finding alternative materials that are stable and less toxic. Bismuth-based perovskite materials are currently one of the most promising candidates among those alternatives. However, the band structures of these materials, including the nature of the bandgaps, remain elusive due to extremely low photoluminescence quantum yield (PLQY) and scattering issues in their thin-film form. Here, we reveal the specific nature of the material\\'s electronic transitions by realizing monodisperse colloidal nanocrystals (NCs) of hexagonal-phase Cs3Bi2X9 perovskites, which afford well-resolved PL features. Interestingly, the PL profile exhibits a dual-spectral feature at room temperature with comparable intensities, based on which we propose an exciton recombination process involving both indirect and direct transitions simultaneously-an observation further supported by temperature-dependent and density functional theory (DFT) calculations. Our findings provide experimental and theoretical insights into the nature of the bandgaps in bismuth halide materials-essential information for assessing their viability in solar cells and optoelectronics.

  12. A novel super-resolution camera model

    Science.gov (United States)

    Shao, Xiaopeng; Wang, Yi; Xu, Jie; Wang, Lin; Liu, Fei; Luo, Qiuhua; Chen, Xiaodong; Bi, Xiangli

    2015-05-01

    Aiming to realize super resolution(SR) to single image and video reconstruction, a super resolution camera model is proposed for the problem that the resolution of the images obtained by traditional cameras behave comparatively low. To achieve this function we put a certain driving device such as piezoelectric ceramics in the camera. By controlling the driving device, a set of continuous low resolution(LR) images can be obtained and stored instantaneity, which reflect the randomness of the displacements and the real-time performance of the storage very well. The low resolution image sequences have different redundant information and some particular priori information, thus it is possible to restore super resolution image factually and effectively. The sample method is used to derive the reconstruction principle of super resolution, which analyzes the possible improvement degree of the resolution in theory. The super resolution algorithm based on learning is used to reconstruct single image and the variational Bayesian algorithm is simulated to reconstruct the low resolution images with random displacements, which models the unknown high resolution image, motion parameters and unknown model parameters in one hierarchical Bayesian framework. Utilizing sub-pixel registration method, a super resolution image of the scene can be reconstructed. The results of 16 images reconstruction show that this camera model can increase the image resolution to 2 times, obtaining images with higher resolution in currently available hardware levels.

  13. Ouabain stimulates a Na+/K+-ATPase-mediated SFK-activated signalling pathway that regulates tight junction function in the mouse blastocyst.

    Directory of Open Access Journals (Sweden)

    Holly Giannatselis

    Full Text Available The Na(+/K(+-ATPase plays a pivotal role during preimplantation development; it establishes a trans-epithelial ionic gradient that facilitates the formation of the fluid-filled blastocyst cavity, crucial for implantation and successful pregnancy. The Na(+/K(+-ATPase is also implicated in regulating tight junctions and cardiotonic steroid (CTS-induced signal transduction via SRC. We investigated the expression of SRC family kinase (SFK members, Src and Yes, during preimplantation development and determined whether SFK activity is required for blastocyst formation. Embryos were collected following super-ovulation of CD1 or MF1 female mice. RT-PCR was used to detect SFK mRNAs encoding Src and Yes throughout preimplantation development. SRC and YES protein were localized throughout preimplantation development. Treatment of mouse morulae with the SFK inhibitors PP2 and SU6656 for 18 hours resulted in a reversible blockade of progression to the blastocyst stage. Blastocysts treated with 10(-3 M ouabain for 2 or 10 minutes and immediately immunostained for phosphorylation at SRC tyr418 displayed reduced phosphorylation while in contrast blastocysts treated with 10(-4 M displayed increased tyr418 fluorescence. SFK inhibition increased and SFK activation reduced trophectoderm tight junction permeability in blastocysts. The results demonstrate that SFKs are expressed during preimplantation development and that SFK activity is required for blastocyst formation and is an important mediator of trophectoderm tight junction permeability.

  14. Quantization of super Teichmueller spaces

    International Nuclear Information System (INIS)

    Aghaei, Nezhla

    2016-08-01

    The quantization of the Teichmueller spaces of Riemann surfaces has found important applications to conformal field theory and N=2 supersymmetric gauge theories. We construct a quantization of the Teichmueller spaces of super Riemann surfaces, using coordinates associated to the ideal triangulations of super Riemann surfaces. A new feature is the non-trivial dependence on the choice of a spin structure which can be encoded combinatorially in a certain refinement of the ideal triangulation. We construct a projective unitary representation of the groupoid of changes of refined ideal triangulations. Therefore, we demonstrate that the dependence of the resulting quantum theory on the choice of a triangulation is inessential. In the quantum Teichmueller theory, it was observed that the key object defining the Teichmueller theory has a close relation to the representation theory of the Borel half of U q (sl(2)). In our research we observed that the role of U q (sl(2)) is taken by quantum superalgebra U q (osp(1 vertical stroke 2)). A Borel half of U q (osp(1 vertical stroke 2)) is the super quantum plane. The canonical element of the Heisenberg double of the quantum super plane is evaluated in certain infinite dimensional representations on L 2 (R) x C 1 vertical stroke 1 and compared to the flip operator from the Teichmueller theory of super Riemann surfaces.

  15. Triple photonic band-gap structure dynamically induced in the presence of spontaneously generated coherence

    International Nuclear Information System (INIS)

    Gao Jinwei; Bao Qianqian; Wan Rengang; Cui Cuili; Wu Jinhui

    2011-01-01

    We study a cold atomic sample coherently driven into the five-level triple-Λ configuration for attaining a dynamically controlled triple photonic band-gap structure. Our numerical calculations show that three photonic band gaps with homogeneous reflectivities up to 92% can be induced on demand around the probe resonance by a standing-wave driving field in the presence of spontaneously generated coherence. All these photonic band gaps are severely malformed with probe reflectivities declining rapidly to very low values when spontaneously generated coherence is gradually weakened. The triple photonic band-gap structure can also be attained in a five-level chain-Λ system of cold atoms in the absence of spontaneously generated coherence, which however requires two additional traveling-wave fields to couple relevant levels.

  16. SuperSegger

    DEFF Research Database (Denmark)

    Stylianidou, Stella; Brennan, Connor; Nissen, Silas B

    2016-01-01

    -colonies with many cells, facilitating the analysis of cell-cycle dynamics in bacteria as well as cell-contact mediated phenomena. This package has a range of built-in capabilities for characterizing bacterial cells, including the identification of cell division events, mother, daughter, and neighboring cells......Many quantitative cell biology questions require fast yet reliable automated image segmentation to identify and link cells from frame-to-frame, and characterize the cell morphology and fluorescence. We present SuperSegger, an automated MATLAB-based image processing package well......-suited to quantitative analysis of high-throughput live-cell fluorescence microscopy of bacterial cells. SuperSegger incorporates machine-learning algorithms to optimize cellular boundaries and automated error resolution to reliably link cells from frame-to-frame. Unlike existing packages, it can reliably segment micro...

  17. Super-Lagrangians

    International Nuclear Information System (INIS)

    Beyl, L.M.

    1979-01-01

    It is shown that the Einstein, Weyl, supergravity and superconformal theories are special cases of gauge transformations in SU(4vertical-barN). This group is shown to contain SU(2,2) x SU(N) x U(1) for its commuting or Bose part, and to contain 8N supersymmetry generators for its anticommuting or Fermi part. Using the electromagnetic Lagrangian as a model, a super-Lagrangian is constructed for vector potentials. Invariance is automatic in free space, but, in the presence of matter, restrictions on the supersymmetry transformations are necessary. The Weyl action and the Einstein cosmological field equations are obtained in the appropriate limits. Finally, a super-Lagrangian is constructed from nongeometric principles which includes the Dirac Lagrangian and except for a sum over symmetry indices resembles the electron-electromagnetic Lagrangian

  18. Stability of large-area molecular junctions

    NARCIS (Netherlands)

    Akkerman, Hylke B.; Kronemeijer, Auke J.; Harkema, Jan; van Hal, Paul A.; Smits, Edsger C. P.; de Leeuw, Dago M.; Blom, Paul W. M.

    The stability of molecular junctions is crucial for any application of molecular electronics. Degradation of molecular junctions when exposed to ambient conditions is regularly observed. In this report the stability of large-area molecular junctions under ambient conditions for more than two years

  19. Reducing support loss in micromechanical ring resonators using phononic band-gap structures

    Energy Technology Data Exchange (ETDEWEB)

    Hsu, Feng-Chia; Huang, Tsun-Che; Wang, Chin-Hung; Chang, Pin [Industrial Technology Research Institute-South, Tainan 709, Taiwan (China); Hsu, Jin-Chen, E-mail: fengchiahsu@itri.org.t, E-mail: hsujc@yuntech.edu.t [Department of Mechanical Engineering, National Yunlin University of Science and Technology, Douliou, Yunlin 64002, Taiwan (China)

    2011-09-21

    In micromechanical resonators, energy loss via supports into the substrates may lead to a low quality factor. To eliminate the support loss, in this paper a phononic band-gap structure is employed. We demonstrate a design of phononic-crystal (PC) strips used to support extensional wine-glass mode ring resonators to increase the quality factor. The PC strips are introduced to stop elastic-wave propagation by the band-gap and deaf-band effects. Analyses of resonant characteristics of the ring resonators and the dispersion relations, eigenmodes, and transmission properties of the PC strips are presented. With the proposed resonator architecture, the finite-element simulations show that the leaky power is effectively reduced and the stored energy inside the resonators is enhanced simultaneously as the operating frequencies of the resonators are within the band gap or deaf bands. Realization of a high quality factor micromechanical ring resonator with minimized support loss is expected.

  20. Reducing support loss in micromechanical ring resonators using phononic band-gap structures

    International Nuclear Information System (INIS)

    Hsu, Feng-Chia; Huang, Tsun-Che; Wang, Chin-Hung; Chang, Pin; Hsu, Jin-Chen

    2011-01-01

    In micromechanical resonators, energy loss via supports into the substrates may lead to a low quality factor. To eliminate the support loss, in this paper a phononic band-gap structure is employed. We demonstrate a design of phononic-crystal (PC) strips used to support extensional wine-glass mode ring resonators to increase the quality factor. The PC strips are introduced to stop elastic-wave propagation by the band-gap and deaf-band effects. Analyses of resonant characteristics of the ring resonators and the dispersion relations, eigenmodes, and transmission properties of the PC strips are presented. With the proposed resonator architecture, the finite-element simulations show that the leaky power is effectively reduced and the stored energy inside the resonators is enhanced simultaneously as the operating frequencies of the resonators are within the band gap or deaf bands. Realization of a high quality factor micromechanical ring resonator with minimized support loss is expected.

  1. Superconducting flux qubits with π-junctions

    International Nuclear Information System (INIS)

    Shcherbakova, Anastasia

    2014-01-01

    In this thesis, we present a fabrication technology of Al/AlO x /Al Josephson junctions on Nb pads. The described technology gives the possibility of combining a variety of Nb-based superconducting circuits, like pi-junction phase-shifters with sub-micron Al/AlO x /Al junctions. Using this approach, we fabricated hybrid Nb/Al flux qubits with and without the SFS-junctions and studied dispersive magnetic field response of these qubits as well as their spectroscopy characteristics.

  2. Resonance Transport of Graphene Nanoribbon T-Shaped Junctions

    International Nuclear Information System (INIS)

    Xiao-Lan, Kong; Yong-Jian, Xiong

    2010-01-01

    We investigate the transport properties of T-shaped junctions composed of armchair graphene nanoribbons of different widths. Three types of junction geometries are considered. The junction conductance strongly depends on the atomic features of the junction geometry. When the shoulders of the junction have zigzag type edges, sharp conductance resonances usually appear in the low energy region around the Dirac point, and a conductance gap emerges. When the shoulders of the junction have armchair type edges, the conductance resonance behavior is weakened significantly, and the metal-metal-metal junction structures show semimetallic behaviors. The contact resistance also changes notably due to the various interface geometries of the junction

  3. Shape optimization of solid-air porous phononic crystal slabs with widest full 3D bandgap for in-plane acoustic waves

    Science.gov (United States)

    D'Alessandro, Luca; Bahr, Bichoy; Daniel, Luca; Weinstein, Dana; Ardito, Raffaele

    2017-09-01

    The use of Phononic Crystals (PnCs) as smart materials in structures and microstructures is growing due to their tunable dynamical properties and to the wide range of possible applications. PnCs are periodic structures that exhibit elastic wave scattering for a certain band of frequencies (called bandgap), depending on the geometric and material properties of the fundamental unit cell of the crystal. PnCs slabs can be represented by plane-extruded structures composed of a single material with periodic perforations. Such a configuration is very interesting, especially in Micro Electro-Mechanical Systems industry, due to the easy fabrication procedure. A lot of topologies can be found in the literature for PnCs with square-symmetric unit cell that exhibit complete 2D bandgaps; however, due to the application demand, it is desirable to find the best topologies in order to guarantee full bandgaps referred to in-plane wave propagation in the complete 3D structure. In this work, by means of a novel and fast implementation of the Bidirectional Evolutionary Structural Optimization technique, shape optimization is conducted on the hole shape obtaining several topologies, also with non-square-symmetric unit cell, endowed with complete 3D full bandgaps for in-plane waves. Model order reduction technique is adopted to reduce the computational time in the wave dispersion analysis. The 3D features of the PnC unit cell endowed with the widest full bandgap are then completely analyzed, paying attention to engineering design issues.

  4. SuperB A High-Luminosity Asymmetric $e^+ e^-$ Super Flavour Factory : Conceptual Design Report

    CERN Document Server

    Bona, M.; Grauges Pous, E.; Colangelo, P.; De Fazio, F.; Palano, A.; Manghisoni, M.; Re, V.; Traversi, G.; Eigen, G.; Venturini, M.; Soni, N.; Bruschi, M.; De Castro, S.; Faccioli, P.; Gabrieli, A.; Giacobbe, B.; Semprini Cesare, N.; Spighi, R.; Villa, M.; Zoccoli, A.; Hearty, C.; McKenna, J.; Soni, A.; Khan, A.; Barniakov, A.Y.; Barniakov, M.Y.; Blinov, V.E.; Druzhinin, V.P.; Golubev, V.B.; Kononov, S.A.; Koop, I.A.; Kravchenko, E.A.; Levichev, E.B.; Nikitin, S.A.; Onuchin, A.P.; Piminov, P.A.; Serednyakov, S.I.; Shatilov, D.N.; Skovpen, Y.I.; Solodov, E.A.; Cheng, C.H.; Echenard, B.; Fang, F.; Hitlin, D.J.; Porter, F.C.; Asner, D.M.; Pham, T.N.; Fleischer, R.; Giudice, G.F.; Hurth, T.; Mangano, M.; Mancinelli, G.; Meadows, B.T.; Schwartz, A.J.; Sokoloff, M.D.; Soffer, A.; Beard, C.D.; Haas, T.; Mankel, R.; Hiller, G.; Ball, P.; Pappagallo, M.; Pennington, M.R.; Gradl, W.; Playfer, S.; Abada, A.; Becirevic, D.; Descotes-Genon, S.; Pene, O.; Andreotti, D.; Andreotti, M.; Bettoni, D.; Bozzi, C.; Calabresi, R.; Cecchi, A.; Cibinetto, G.; Franchini, P.; Luppi, E.; Negrini, M.; Petrella, A.; Piemontese, L.; Prencipe, E.; Santoro, V.; Stancari, G.; Anulli, F.; Baldini-Ferroli, R.; Biagini, M.E.; Boscolo, M.; Calcaterra, A.; Drago, A.; Finocchiaro, G.; Guiducci, S.; Isidori, G.; Pacetti, S.; Patteri, P.; Peruzzi, I.M.; Piccolo, M.; Preger, M.A.; Raimondi, P.; Rama, M.; Vaccarezza, C.; Zallo, A.; Zobov, M.; De Sangro, R.; Buzzo, A.; Lo Vetere, M.; Macri, M.; Monge, M.R.; Passaggio, S.; Patrignani, C.; Robutti, E.; Tosi, S.; Matias, J.; Panduro Vazquez, W.; Borzumati, F.; Eyges, V.; Prell, S.A.; Pedlar, T.K.; Korpar, S.; Pestonik, R.; Staric, M.; Neubert, M.; Denig, A.G.; Nierste, U.; Agoh, T.; Ohmi, K.; Ohnishi, Y.; Fry, J.R.; Touramanis, C.; Wolski, A.; Golob, B.; Krizan, P.; Flaecher, H.; Bevan, A.J.; Di Lodovico, F.; George, K.A.; Barlow, R.; Lafferty, G.; Jawahery, A.; Roberts, D.A.; Simi, G.; Patel, P.M.; Robertson, S.H.; Lazzaro, A.; Palombo, F.; Kaidalov, A.; Buras, A.J.; Tarantino, C.; Buchalla, G.; Sanda, A.I.; D'Ambrosio, G.; Ricciardi, G.; Bigi, I.; Jessop, C.P.; Losecco, J.M.; Honscheid, K.; Arnaud, N.; Chehab, R.; Fedala, Y.; Polci, F.; Roudeau, P.; Sordini, V.; Soskov, V.; Stocchi, A.; Variola, A.; Vivoli, A.; Wormser, G.; Zomer, F.; Bertolin, A.; Brugnera, R.; Gagliardi, N.; Gaz, A.; Margoni, M.; Morandin, M.; Posocco, M.; Rotondo, M.; Simonetto, F.; Stroili, R.; Bonneaud, G.R.; Lombardo, V.; Calderini, G.; Ratti, L.; Speziali, V.; Biasini, M.; Covarelli, R.; Manoni, E.; Servoli, L.; Angelini, C.; Batignani, G.; Bettarini, S.; Bosi, F.; Carpinelli, M.; Cenci, R.; Cervelli, A.; Dell'Orso, M.; Forti, F.; Giannetti, P.; Giorgi, M.; Lusiani, A.; Marchiori, G.; Massa, M.; Mazur, M.A.; Morsani, F.; Neri, N.; Paoloni, E.; Raffaelli, F.; Rizzo, G.; Walsh, J.; Braun, V.; Lenz, A.; Adams, G.S.; Danko, I.Z.; Baracchini, E.; Bellini, F.; Cavoto, G.; D'Orazio, A.; Del Re, D.; Di Marco, E.; Faccini, R.; Ferrarotto, F.; Gaspero, Mario; Jackson, P.; Martinelli, G.; Mazzoni, M.A.; Morganti, Silvio; Piredda, G.; Renga, F.; Silvestrini, L.; Voena, C.; Catani, L.; Di Ciaccio, A.; Messi, R.; Santovetti, E.; Satta, A.; Ciuchini, M.; Lubicz, V.; Wilson, F.F.; Godang, R.; Chen, X.; Liu, H.; Park, W.; Purohit, M.; Trivedi, A.; White, R.M.; Wilson, J.R.; Allen, M.T.; Aston, D.; Bartoldus, R.; Brodsky, S.J.; Cai, Y.; Coleman, J.; Convery, M.R.; DeBarger, S.; Dingfelder, J.C.; Dubois-Felsmann, G.P.; Ecklund, S.; Fisher, A.S.; Haller, G.; Heifets, S.A.; Kaminski, J.; Kelsey, M.H.; Kocian, M.L.; Leith, D.W.G.S.; Li, N.; Luitz, S.; Luth, V.; MacFarlane, D.; Messner, R.; Muller, D.R.; Nosochkov, Y.; Novokhatski, A.; Pivi, M.; Ratcliff, B.N.; Roodman, A.; Schwiening, J.; Seeman, J.; Snyder, A.; Sullivan, M.; Va'Vra, J.; Wienands, U.; Wisniewski, W.; Stoeck, H.; Cheng, H.Y.; Li, H.N.; Keum, Y.Y.; Gronau, M.; Grossman, Y.; Bianchi, F.; Gamba, D.; Gambino, P.; Marchetto, F.; Menichetti, Ezio A.; Mussa, R.; Pelliccioni, M.; Dalla Betta, G.F.; Bomben, M.; Bosisio, L.; Cartaro, C.; Lanceri, L.; Vitale, L.; Azzolini, V.; Bernabeu, J.; Lopez-March, N.; Martinez-Vidal, F.; Milanes, D.A.; Oyanguren, A.; Paradisi, P.; Pich, A.; Sanchis-Lozano, M.A.; Kowalewski, Robert V.; Roney, J.M.; Back, J.J.; Gershon, T.J.; Harrison, P.F.; Latham, T.E.; Mohanty, G.B.; Petrov, A.A.; Pierini, M.; INFN

    2007-01-01

    The physics objectives of SuperB, an asymmetric electron-positron collider with a luminosity above 10^36/cm^2/s are described, together with the conceptual design of a novel low emittance design that achieves this performance with wallplug power comparable to that of the current B Factories, and an upgraded detector capable of doing the physics in the SuperB environment.

  5. Advances in copper-chalcopyrite thin films for solar energy conversion

    Energy Technology Data Exchange (ETDEWEB)

    Kaneshiro, Jess; Gaillard, Nicolas; Rocheleau, Richard; Miller, Eric [Hawaii Natural Energy Institute, University of Hawaii at Manoa, 1680 East-West Road, Post 109, Honolulu, HI 96822 (United States)

    2010-01-15

    Promising alternatives to crystalline silicon as the basic building block of solar cells include copper-chalcopyrite thin films such as copper indium gallium diselenide, a class of thin films exhibiting bandgap-tunable semiconductor behavior, direct bandgaps and high absorption coefficients. These properties allow for the development of novel solar-energy conversion configurations like ultra-high efficiency multi-junction solar cells utilizing combinations of photovoltaic and photoelectrochemical junctions for hydrogen production. This paper discusses the current worldwide status as well as the development and optimization of copper-chalcopyrite thin films deposited onto various substrate types for different photovoltaic and photoelectrochemical applications at the Hawaii Natural Energy Institute. (author)

  6. Electric field engineering using quantum-size-effect-tuned heterojunctions

    KAUST Repository

    Adinolfi, V.

    2013-07-03

    A quantum junction solar cell architecture was recently reported that employs colloidal quantum dots (CQDs) on each side of the p-n junction. This architecture extends the range of design opportunities for CQD photovoltaics, since the bandgap can be tuned across the light-absorbing semiconductor layer via control over CQD size, employing solution-processed, room-temperature fabricated materials. We exploit this feature by designing and demonstrating a field-enhanced heterojunction architecture. We optimize the electric field profile within the solar cell through bandgap engineering, thereby improving carrier collection and achieving an increased open circuit voltage, resulting in a 12% improvement in power conversion efficiency.

  7. Fabrication of a three-dimensional photonic band-gap crystal of air-spheres in a titania matrix

    Science.gov (United States)

    Diop, M.; Maurin, G.; Tork, Amir; Lessard, Roger A.

    2003-02-01

    A three-dimensional (3D) colloidal crystal have been grown from an aqueous colloidal solution of highly monodisperse submicrometer-sized polystyrene spheres using a self-assembly processing technique. The electromagnetic waves diffracted by this crystal can interfere and give rise to a photonic band-gap. However, due to the low refractive index contrast within this material the band-gap is incomplete. By filling the voids between the spheres of the colloidal crystal with titania and removing the polystyrene beads by sublimation, we obtained an inverse-opal structure with an increased refractive index contrast showing strong opalescence.

  8. Josephson junctions with ferromagnetic interlayer

    International Nuclear Information System (INIS)

    Wild, Georg Hermann

    2012-01-01

    We report on the fabrication of superconductor/insulator/ferromagnetic metal/superconductor (Nb/AlO x /Pd 0.82 Ni 0.18 /Nb) Josephson junctions (SIFS JJs) with high critical current densities, large normal resistance times area products, and high quality factors. For these junctions, a transition from 0- to π-coupling is observed for a thickness d F =6 nm of the ferromagnetic Pd 0.82 Ni 0.18 interlayer. The magnetic field dependence of the critical current of the junctions demonstrates good spatial homogeneity of the tunneling barrier and ferromagnetic interlayer. Magnetic characterization shows that the Pd 0.82 Ni 0.18 has an out-of-plane anisotropy and large saturation magnetization indicating negligible dead layers at the interfaces. A careful analysis of Fiske modes up to about 400 GHz provides valuable information on the junction quality factor and the relevant damping mechanisms. Whereas losses due to quasiparticle tunneling dominate at low frequencies, at high frequencies the damping is explained by the finite surface resistance of the junction electrodes. High quality factors of up to 30 around 200 GHz have been achieved. They allow to study the junction dynamics, in particular the switching probability from the zero-voltage into the voltage state with and without microwave irradiation. The experiments with microwave irradiation are well explained within semi-classical models and numerical simulations. In contrast, at mK temperature the switching dynamics without applied microwaves clearly shows secondary quantum effects. Here, we could observe for the first time macroscopic quantum tunneling in Josephson junctions with a ferromagnetic interlayer. This observation excludes fluctuations of the critical current as a consequence of an unstable magnetic domain structure of the ferromagnetic interlayer and affirms the suitability of SIFS Josephson junctions for quantum information processing.

  9. Josephson junctions with ferromagnetic interlayer

    Energy Technology Data Exchange (ETDEWEB)

    Wild, Georg Hermann

    2012-03-04

    We report on the fabrication of superconductor/insulator/ferromagnetic metal/superconductor (Nb/AlO{sub x}/Pd{sub 0.82}Ni{sub 0.18}/Nb) Josephson junctions (SIFS JJs) with high critical current densities, large normal resistance times area products, and high quality factors. For these junctions, a transition from 0- to {pi}-coupling is observed for a thickness d{sub F}=6 nm of the ferromagnetic Pd{sub 0.82}Ni{sub 0.18} interlayer. The magnetic field dependence of the critical current of the junctions demonstrates good spatial homogeneity of the tunneling barrier and ferromagnetic interlayer. Magnetic characterization shows that the Pd{sub 0.82}Ni{sub 0.18} has an out-of-plane anisotropy and large saturation magnetization indicating negligible dead layers at the interfaces. A careful analysis of Fiske modes up to about 400 GHz provides valuable information on the junction quality factor and the relevant damping mechanisms. Whereas losses due to quasiparticle tunneling dominate at low frequencies, at high frequencies the damping is explained by the finite surface resistance of the junction electrodes. High quality factors of up to 30 around 200 GHz have been achieved. They allow to study the junction dynamics, in particular the switching probability from the zero-voltage into the voltage state with and without microwave irradiation. The experiments with microwave irradiation are well explained within semi-classical models and numerical simulations. In contrast, at mK temperature the switching dynamics without applied microwaves clearly shows secondary quantum effects. Here, we could observe for the first time macroscopic quantum tunneling in Josephson junctions with a ferromagnetic interlayer. This observation excludes fluctuations of the critical current as a consequence of an unstable magnetic domain structure of the ferromagnetic interlayer and affirms the suitability of SIFS Josephson junctions for quantum information processing.

  10. Characterization of vertical GaN p-n diodes and junction field-effect transistors on bulk GaN down to cryogenic temperatures

    Science.gov (United States)

    Kizilyalli, I. C.; Aktas, O.

    2015-12-01

    There is great interest in wide-bandgap semiconductor devices and most recently in vertical GaN structures for power electronic applications such as power supplies, solar inverters and motor drives. In this paper the temperature-dependent electrical behavior of vertical GaN p-n diodes and vertical junction field-effect transistors fabricated on bulk GaN substrates of low defect density (104 to 106 cm-2) is described. Homoepitaxial MOCVD growth of GaN on its native substrate and the ability to control the doping in the drift layers in GaN have allowed the realization of vertical device architectures with drift layer thicknesses of 6 to 40 μm and net carrier electron concentrations as low as 1 × 1015 cm-3. This parameter range is suitable for applications requiring breakdown voltages of 1.2 kV to 5 kV. Mg, which is used as a p-type dopant in GaN, is a relatively deep acceptor (E A ≈ 0.18 eV) and susceptible to freeze-out at temperatures below 200 K. The loss of holes in p-GaN has a deleterious effect on p-n junction behavior, p-GaN contacts and channel control in junction field-effect transistors at temperatures below 200 K. Impact ionization-based avalanche breakdown (BV > 1200 V) in GaN p-n junctions is characterized between 77 K and 423 K for the first time. At higher temperatures the p-n junction breakdown voltage improves due to increased phonon scattering. A positive temperature coefficient in the breakdown voltage is demonstrated down to 77 K; however, the device breakdown characteristics are not as abrupt at temperatures below 200 K. On the other hand, contact resistance to p-GaN is reduced dramatically above room temperature, improving the overall device performance in GaN p-n diodes in all cases except where the n-type drift region resistance dominates the total forward resistance. In this case, the electron mobility can be deconvolved and is found to decrease with T -3/2, consistent with a phonon scattering model. Also, normally-on vertical junction

  11. A computational study on the energy bandgap engineering in performance enhancement of CdTe thin film solar cells

    Directory of Open Access Journals (Sweden)

    Ameen M. Ali

    Full Text Available In this study, photovoltaic properties of CdTe thin film in the configuration of n-SnO2/n-CdS/p-CdTe/p-CdTe:Te/metal have been studied by numerical simulation software named “Analysis of Microelectronic and Photonic Structure” (AMPS-1D. A modified structure for CdTe thin film solar cell has been proposed by numerical analysis with the insertion of a back contact buffer layer (CdTe:Te. This layer can serve as a barrier that will decelerate the copper diffusion in CdTe solar cell. Four estimated energy bandgap relations versus the Tellurium (Te concentrations and the (CdTe:Te layer thickness have been examined thoroughly during simulation. Correlation between energy bandgap with the CdTe thin film solar cell performance has also been established. Keywords: Numerical modelling, CdTe thin film, Solar cell, AMPS-1D, Bandgap

  12. Electron optics with ballistic graphene junctions

    Science.gov (United States)

    Chen, Shaowen

    Electrons transmitted across a ballistic semiconductor junction undergo refraction, analogous to light rays across an optical boundary. A pn junction theoretically provides the equivalent of a negative index medium, enabling novel electron optics such as negative refraction and perfect (Veselago) lensing. In graphene, the linear dispersion and zero-gap bandstructure admit highly transparent pn junctions by simple electrostatic gating, which cannot be achieved in conventional semiconductors. Robust demonstration of these effects, however, has not been forthcoming. Here we employ transverse magnetic focusing to probe propagation across an electrostatically defined graphene junction. We find perfect agreement with the predicted Snell's law for electrons, including observation of both positive and negative refraction. Resonant transmission across the pn junction provides a direct measurement of the angle dependent transmission coefficient, and we demonstrate good agreement with theory. Comparing experimental data with simulation reveals the crucial role played by the effective junction width, providing guidance for future device design. Efforts toward sharper pn junction and possibility of zero field Veselago lensing will also be discussed. This work is supported by the Semiconductor Research Corporations NRI Center for Institute for Nanoelectronics Discovery and Exploration (INDEX).

  13. Peltier cooling in molecular junctions

    Science.gov (United States)

    Cui, Longji; Miao, Ruijiao; Wang, Kun; Thompson, Dakotah; Zotti, Linda Angela; Cuevas, Juan Carlos; Meyhofer, Edgar; Reddy, Pramod

    2018-02-01

    The study of thermoelectricity in molecular junctions is of fundamental interest for the development of various technologies including cooling (refrigeration) and heat-to-electricity conversion1-4. Recent experimental progress in probing the thermopower (Seebeck effect) of molecular junctions5-9 has enabled studies of the relationship between thermoelectricity and molecular structure10,11. However, observations of Peltier cooling in molecular junctions—a critical step for establishing molecular-based refrigeration—have remained inaccessible. Here, we report direct experimental observations of Peltier cooling in molecular junctions. By integrating conducting-probe atomic force microscopy12,13 with custom-fabricated picowatt-resolution calorimetric microdevices, we created an experimental platform that enables the unified characterization of electrical, thermoelectric and energy dissipation characteristics of molecular junctions. Using this platform, we studied gold junctions with prototypical molecules (Au-biphenyl-4,4'-dithiol-Au, Au-terphenyl-4,4''-dithiol-Au and Au-4,4'-bipyridine-Au) and revealed the relationship between heating or cooling and charge transmission characteristics. Our experimental conclusions are supported by self-energy-corrected density functional theory calculations. We expect these advances to stimulate studies of both thermal and thermoelectric transport in molecular junctions where the possibility of extraordinarily efficient energy conversion has been theoretically predicted2-4,14.

  14. Dynamics of pi-junction interferometer circuits

    DEFF Research Database (Denmark)

    Kornkev, V.K.; Mozhaev, P.B.; Borisenko, I.V.

    2002-01-01

    The pi-junction superconducting circuit dynamics was studied by means of numerical simulation technique. Parallel arrays consisting of Josephson junctions of both 0- and pi-type were studied as a model of high-T-c grain-boundary Josephson junction. The array dynamics and the critical current depe...

  15. Effect of background dielectric on TE-polarized photonic bandgap of metallodielectric photonic crystals using Dirichlet-to-Neumann map method.

    Science.gov (United States)

    Sedghi, Aliasghar; Rezaei, Behrooz

    2016-11-20

    Using the Dirichlet-to-Neumann map method, we have calculated the photonic band structure of two-dimensional metallodielectric photonic crystals having the square and triangular lattices of circular metal rods in a dielectric background. We have selected the transverse electric mode of electromagnetic waves, and the resulting band structures showed the existence of photonic bandgap in these structures. We theoretically study the effect of background dielectric on the photonic bandgap.

  16. Large bandgap narrowing in rutile TiO2 aimed towards visible light applications and its correlation with vacancy-type defects history and transformation

    Science.gov (United States)

    Nair, Radhika V.; Gayathri, P. K.; Siva Gummaluri, Venkata; Nambissan, P. M. G.; Vijayan, C.

    2018-01-01

    Extension of photoactivity of TiO2 to the visible region is achievable via effective control over the intrinsic defects such as oxygen and Ti vacancies, which has several applications in visible photocatalysis and sensing. We present here the first observation of an apparent bandgap narrowing and bandgap tuning effect due to vacancy cluster transformation in rutile TiO2 structures to 1.84 eV from the bulk bandgap of 3 eV. A gradual transformation of divacancies (V Ti-O) to tri vacancies ({{V}Ti-O-T{{i-}}} ) achieved through a controlled solvothermal scheme appears to result in an apparent narrowing bandgap and tunability, as supported by positron annihilation lifetime and electron paramagnetic resonance spectroscopy measurements. Visible photocatalytic activity of the samples is demonstrated in terms of photodegradation of rhodamine B dye molecules.

  17. Geodynamical simulation of the RRF triple junction

    Science.gov (United States)

    Wang, Z.; Wei, D.; Liu, M.; Shi, Y.; Wang, S.

    2017-12-01

    Triple junction is the point at which three plate boundaries meet. Three plates at the triple junction form a complex geological tectonics, which is a natural laboratory to study the interactions of plates. This work studies a special triple junction, the oceanic transform fault intersects the collinear ridges with different-spreading rates, which is free of influence of ridge-transform faults and nearby hotspots. First, we build 3-D numerical model of this triple junction used to calculate the stead-state velocity and temperature fields resulting from advective and conductive heat transfer. We discuss in detail the influence of the velocity and temperature fields of the triple junction from viscosity, spreading rate of the ridge. The two sides of the oceanic transform fault are different sensitivities to the two factors. And, the influence of the velocity mainly occurs within 200km of the triple junction. Then, we modify the model by adding a ridge-transform fault to above model and directly use the velocity structure of the Macquarie triple junction. The simulation results show that the temperature at both sides of the oceanic transform fault decreases gradually from the triple junction, but the temperature difference between the two sides is a constant about 200°. And, there is little effect of upwelling velocity away from the triple junction 100km. The model results are compared with observational data. The heat flux and thermal topography along the oceanic transform fault of this model are consistent with the observed data of the Macquarie triple junction. The earthquakes are strike slip distributed along the oceanic transform fault. Their depths are also consistent with the zone of maximum shear stress. This work can help us to understand the interactions of plates of triple junctions and help us with the foundation for the future study of triple junctions.

  18. Soliton formation in hollow-core photonic bandgap fibers

    DEFF Research Database (Denmark)

    Lægsgaard, Jesper

    2009-01-01

    of an approximate scaling relation is tested. It is concluded that compression of input pulses of several ps duration and sub-MW peak power can lead to a formation of solitons with ∼100 fs duration and multi-megawatt peak powers. The dispersion slope of realistic hollow-core fibers appears to be the main obstacle......The formation of solitons upon compression of linearly chirped pulses in hollow-core photonic bandgap fibers is investigated numerically. The dependence of soliton duration on the chirp and power of the input pulse and on the dispersion slope of the fiber is investigated, and the validity...

  19. Regioregular narrow-bandgap-conjugated polymers for plastic electronics

    Science.gov (United States)

    Ying, Lei; Huang, Fei; Bazan, Guillermo C.

    2017-03-01

    Progress in the molecular design and processing protocols of semiconducting polymers has opened significant opportunities for the fabrication of low-cost plastic electronic devices. Recent studies indicate that field-effect transistors and organic solar cells fabricated using narrow-bandgap regioregular polymers with translational symmetries in the direction of the backbone vector often outperform those containing analogous regiorandom polymers. This review addresses the cutting edge of regioregularity chemistry, in particular how to control the spatial distribution in the molecular structures and how this order translates to more ordered bulk morphologies. The effect of regioregularity on charge transport and photovoltaic properties is also outlined.

  20. Super capacitor modeling with artificial neural network (ANN)

    Energy Technology Data Exchange (ETDEWEB)

    Marie-Francoise, J.N.; Gualous, H.; Berthon, A. [Universite de Franche-Comte, Lab. en Electronique, Electrotechnique et Systemes (L2ES), UTBM, INRETS (LRE T31) 90 - Belfort (France)

    2004-07-01

    This paper presents super-capacitors modeling using Artificial Neural Network (ANN). The principle consists on a black box nonlinear multiple inputs single output (MISO) model. The system inputs are temperature and current, the output is the super-capacitor voltage. The learning and the validation of the ANN model from experimental charge and discharge of super-capacitor establish the relationship between inputs and output. The learning and the validation of the ANN model use experimental results of 2700 F, 3700 F and a super-capacitor pack. Once the network is trained, the ANN model can predict the super-capacitor behaviour with temperature variations. The update parameters of the ANN model are performed thanks to Levenberg-Marquardt method in order to minimize the error between the output of the system and the predicted output. The obtained results with the ANN model of super-capacitor and experimental ones are in good agreement. (authors)

  1. sl(1|2) Super-Toda Fields

    Science.gov (United States)

    Yang, Zhan-Ying; Xue, Pan-Pan; Zhao, Liu; Shi, Kang-Jie

    2008-11-01

    Explicit exact solution of supersymmetric Toda fields associated with the Lie superalgebra sl(2|1) is constructed. The approach used is a super extension of Leznov Saveliev algebraic analysis, which is based on a pair of chiral and antichiral Drienfeld Sokolov systems. Though such approach is well understood for Toda field theories associated with ordinary Lie algebras, its super analogue was only successful in the super Liouville case with the underlying Lie superalgebra osp(1|2). The problem lies in that a key step in the construction makes use of the tensor product decomposition of the highest weight representations of the underlying Lie superalgebra, which is not clear until recently. So our construction made in this paper presents a first explicit example of Leznov Saveliev analysis for super Toda systems associated with underlying Lie superalgebras of the rank higher than 1.

  2. sl(1|2) Super-Toda Fields

    International Nuclear Information System (INIS)

    Yang Zhanying; Xue Panpan; Zhao Liu; Shi Kangjie

    2008-01-01

    Explicit exact solution of supersymmetric Toda fields associated with the Lie superalgebra sl(2|1) is constructed. The approach used is a super extension of Leznov-Saveliev algebraic analysis, which is based on a pair of chiral and antichiral Drienfeld-Sokolov systems. Though such approach is well understood for Toda field theories associated with ordinary Lie algebras, its super analogue was only successful in the super Liouville case with the underlying Lie superalgebra osp(1|2). The problem lies in that a key step in the construction makes use of the tensor product decomposition of the highest weight representations of the underlying Lie superalgebra, which is not clear until recently. So our construction made in this paper presents a first explicit example of Leznov-Saveliev analysis for super Toda systems associated with underlying Lie superalgebras of the rank higher than 1

  3. Loss models for long Josephson junctions

    DEFF Research Database (Denmark)

    Olsen, O. H.; Samuelsen, Mogens Rugholm

    1984-01-01

    A general model for loss mechanisms in long Josephson junctions is presented. An expression for the zero-field step is found for a junction of overlap type by means of a perturbation method. Comparison between analytic solution and perturbation result shows good agreement.......A general model for loss mechanisms in long Josephson junctions is presented. An expression for the zero-field step is found for a junction of overlap type by means of a perturbation method. Comparison between analytic solution and perturbation result shows good agreement....

  4. Dynamics of the Josephson multi-junction system with junctions characterized by non-sinusoidal current - phase relationship

    International Nuclear Information System (INIS)

    Abal'osheva, I.; Lewandowski, S.J.

    2004-01-01

    It is shown that the inclusion of junctions characterized by non-sinusoidal current - phase relationship in the systems composed of multiple Josephson junctions - results in the appearance of additional system phase states. Numerical simulations and stability considerations confirm that those phase states can be realized in practice. Moreover, spontaneous formation of the grain boundary junctions in high-T c superconductors with non-trivial current-phase relations due to the d-wave symmetry of the order parameter is probable. Switching between the phase states of multiple grain boundary junction systems can lead to additional 1/f noise in high-T c superconductors. (author)

  5. Theoretical and experimental investigations on synchronization in many-junction arrays of HTSC Josephson junctions. Final report

    International Nuclear Information System (INIS)

    Seidel, P.; Heinz, E.; Pfuch, A.; Machalett, F.; Krech, W.; Basler, M.

    1996-06-01

    Different many-junction arrays of Josephson junctions were studied theoretically to analyse the mechanisms of synchronization, the influence of internal and external parameters and the maximal allowed spread of parameters for the single junctions. Concepts to realize arrays using standard high-T c superconductor technology were created, e.g. the new arrangement of multijunction superconducting loops (MSL). First experimental results show the relevance of this concept. Intrinsic one-dimensional arrays in thin film technology were prepared as mesas out of Bi or Tl 2212 films. to characterize HTSC Josephson junctions methods based on the analysis of microwave-induced steps were developed. (orig.) [de

  6. Single P-N junction tandem photovoltaic device

    Science.gov (United States)

    Walukiewicz, Wladyslaw [Kensington, CA; Ager, III, Joel W.; Yu, Kin Man [Lafayette, CA

    2011-10-18

    A single P-N junction solar cell is provided having two depletion regions for charge separation while allowing the electrons and holes to recombine such that the voltages associated with both depletion regions of the solar cell will add together. The single p-n junction solar cell includes an alloy of either InGaN or InAlN formed on one side of the P-N junction with Si formed on the other side in order to produce characteristics of a two junction (2J) tandem solar cell through only a single P-N junction. A single P-N junction solar cell having tandem solar cell characteristics will achieve power conversion efficiencies exceeding 30%.

  7. A superparticle on the 'super' Poincare upper half plane

    International Nuclear Information System (INIS)

    Uehara, S.; Yasui, Yukinora

    1988-01-01

    A non-relativistic superparticle moving freely on the 'super' Poincare upper half plane is investigated. The lagrangian is invariant under the super Moebius transformations SPL (2, R), so that it can be projected into the lagrangian on the super Riemann surface. The quantum hamiltonian becomes the 'super' Laplace-Beltrami operator in the curved superspace. (orig.)

  8. Raspberry Pi super cluster

    CERN Document Server

    Dennis, Andrew K

    2013-01-01

    This book follows a step-by-step, tutorial-based approach which will teach you how to develop your own super cluster using Raspberry Pi computers quickly and efficiently.Raspberry Pi Super Cluster is an introductory guide for those interested in experimenting with parallel computing at home. Aimed at Raspberry Pi enthusiasts, this book is a primer for getting your first cluster up and running.Basic knowledge of C or Java would be helpful but no prior knowledge of parallel computing is necessary.

  9. Contributions of oxygen vacancies and titanium interstitials to band-gap states of reduced titania

    Science.gov (United States)

    Li, Jingfeng; Lazzari, Rémi; Chenot, Stéphane; Jupille, Jacques

    2018-01-01

    The spectroscopic fingerprints of the point defects of titanium dioxide remain highly controversial. Seemingly indisputable experiments lead to conflicting conclusions in which oxygen vacancies and titanium interstitials are alternately referred to as the primary origin of the Ti 3 d band-gap states. We report on experiments performed by electron energy loss spectroscopy whose key is the direct annealing of only the very surface of rutile TiO2(110 ) crystals and the simultaneous measurement of its temperature via the Bose-Einstein loss/gain ratio. By surface preparations involving reactions with oxygen and water vapor, in particular, under electron irradiation, vacancy- and interstitial-related band-gap states are singled out. Off-specular measurements reveal that both types of defects contribute to a unique charge distribution that peaks in subsurface layers with a common dispersive behavior.

  10. The anatomical locus of T-junction processing.

    Science.gov (United States)

    Schirillo, James A

    2009-07-01

    Inhomogeneous surrounds can produce either asymmetrical or symmetrical increment/decrement induction by orienting T-junctions to selectively group a test patch with surrounding regions [Melfi, T., & Schirillo, J. (2000). T-junctions in inhomogeneous surrounds. Vision Research, 40, 3735-3741]. The current experiments aimed to determine where T-junctions are processed by presenting each eye with a different image so that T-junctions exist only in the fused percept. Only minor differences were found between retinal and cortical versus cortical-only conditions, indicating that T-junctions are processed cortically.

  11. BEWARE OF...SUPER GLUES!!

    CERN Multimedia

    2006-01-01

    What happened? A number of accidents have occurred with the use of 'Super Glues'. Some individuals have suffered injuries - severe irritation, or skin bonded together - through getting glue on their face and in their eyes. What are the hazards associated with glues? 'Super Glues' (i.e. cyanoacrylates): Are harmful if swallowed and are chemical irritants to the eyes, respiratory system and skin. Present the risk of polymerization (hardening) leading to skin damage. Be careful ! 'Super Glues' can bond to skin and eyes in seconds. Note: Other glues, resins and hardeners are also chemicals and as such can cause serious damage to the skin, eyes, respiratory or digestive tract. (For example: some components can be toxic, harmful, corrosive, sensitizing agents, etc.). How to prevent accidents in the future? Read the Material Safety Data Sheet (MSDS) for all of the glues you work with. Check the label on the container to find out which of the materials you work with are hazardous. Wear the right Per...

  12. Recovery of the SuperTIGER Instrument and Preparations for the Flight of SuperTIGER-2

    Science.gov (United States)

    Walsh, N. E.; Supertiger Collaboration

    2016-03-01

    On December 8, 2012, the SuperTIGER (Trans-Iron Galactic Element Recorder) instrument began its long-duration balloon flight from Williams Field, Antarctica. Flying for a record-breaking 55 days at a mean altitude of 125,000 feet, the instrument successfully measured the relative elemental abundances of Galactic cosmic ray nuclei having charge (Z) greater than Z=10, showing very well resolved individual element peaks up to Z=40. The instrument measures particle charge and energy through the combined use of two Cherenkov detectors and three scintillation detectors, and determines particle trajectory with a scintillating fiber hodoscope. After cutdown and two years on the ice, SuperTIGER was successfully recovered in January, 2015. Its detectors and hodoscopes are being tested and refurbished, and are expected to be used again for a second flight, SuperTIGER-2. The second flight is aimed at improving SuperTIGER's already excellent charge resolution as well as at accumulating more data to be combined with that of SuperTIGER for improved statistics. In November 2015, a test of the scintillator saturation effect was performed at CERN using a beam of interacted Pb nuclei to help create more accurate charge reconstruction models that will help resolve elements in the range Z=41 to Z=60. This research was supported by NASA under Grants NNX09AC17G, NNX14AB25G, the Peggy and Steve Fossett Foundation and the McDonnell Center for the Space Sciences at Washington University.

  13. Mixing in T-junctions

    NARCIS (Netherlands)

    Kok, Jacobus B.W.; van der Wal, S.

    1996-01-01

    The transport processes that are involved in the mixing of two gases in a T-junction mixer are investigated. The turbulent flow field is calculated for the T-junction with the k- turbulence model by FLOW3D. In the mathematical model the transport of species is described with a mixture fraction

  14. Photonic bandgap fiber lasers and multicore fiber lasers for next generation high power lasers

    DEFF Research Database (Denmark)

    Shirakawa, A.; Chen, M.; Suzuki, Y.

    2014-01-01

    Photonic bandgap fiber lasers are realizing new laser spectra and nonlinearity mitigation that a conventional fiber laser cannot. Multicore fiber lasers are a promising tool for power scaling by coherent beam combination. © 2014 OSA....

  15. Synthesis and characterization of a low bandgap conjugated polymer for bulk heterojunction photovoltaic cells

    NARCIS (Netherlands)

    Dhanabalan, A.; Duren, van J.K.J.; Hal, van P.A.; Dongen, van J.L.J.; Janssen, R.A.J.

    2001-01-01

    Low optical bandgap conjugated polymers may improve the efficiency of organic photovoltaic devices by increasing the absorption in the visible and near infrared region of the solar spectrum. Here we demonstrate that condensation polymerization of

  16. SuperHILAC

    International Nuclear Information System (INIS)

    Nemetz, R.; Selph, F.; Barnes, A.C.

    1976-01-01

    A brief discussion is given of improvements, operations, and research programs at the SuperHILAC. Improvements were made in beam injection, ion sources, and computer control systems. The research efficiency ranged between 70 and 90 percent during most of the year

  17. Two-reduction of the super-KP hierarchy

    International Nuclear Information System (INIS)

    McArthur, I.N.

    1994-01-01

    Recursion relations are established for the residues of fractional powers of a two-reduced super-KP operator making use of the Baker-Akhiezer function. These show the integrability of the two-reduced even (or bosonic) flows of the super-KP hierarchy. Similar recursion relations are also proven for the residues of operators associated with the odd (or fermionic) flows of the Mulase-Rabin super-KP hierarchy. Due to the presence of a spectral parameter and itts fermionic partner in the Baker-Akhiezer function, these recursion relations should be relevant to any attempt to prove or disprove a recent proposal that the integrable hierarchy underlying two-dimensional quantum supergravity is the Mulase-Rabin super-KP hierarchy. (orig.)

  18. Super-resolution imaging applied to moving object tracking

    Science.gov (United States)

    Swalaganata, Galandaru; Ratna Sulistyaningrum, Dwi; Setiyono, Budi

    2017-10-01

    Moving object tracking in a video is a method used to detect and analyze changes that occur in an object that being observed. Visual quality and the precision of the tracked target are highly wished in modern tracking system. The fact that the tracked object does not always seem clear causes the tracking result less precise. The reasons are low quality video, system noise, small object, and other factors. In order to improve the precision of the tracked object especially for small object, we propose a two step solution that integrates a super-resolution technique into tracking approach. First step is super-resolution imaging applied into frame sequences. This step was done by cropping the frame in several frame or all of frame. Second step is tracking the result of super-resolution images. Super-resolution image is a technique to obtain high-resolution images from low-resolution images. In this research single frame super-resolution technique is proposed for tracking approach. Single frame super-resolution was a kind of super-resolution that it has the advantage of fast computation time. The method used for tracking is Camshift. The advantages of Camshift was simple calculation based on HSV color that use its histogram for some condition and color of the object varies. The computational complexity and large memory requirements required for the implementation of super-resolution and tracking were reduced and the precision of the tracked target was good. Experiment showed that integrate a super-resolution imaging into tracking technique can track the object precisely with various background, shape changes of the object, and in a good light conditions.

  19. Effect of junction configurations on microdroplet formation in a T-junction microchannel

    Science.gov (United States)

    Lih, F. L.; Miao, J. M.

    2015-03-01

    This study investigates the dynamic formation process of water microdroplets in a silicon oil flow in a T-junction microchannel. Segmented water microdroplets are formed at the junction when the water flow is perpendicularly injected into the silicon oil flow in a straight rectangular microchannel. This study further presents the effects of the water flow inlet geometry on hydrodynamic characteristics of water microdroplet formation. A numerical multiphase volume of fluid (VOF) scheme is coupled to solve the unsteady three-dimensional laminar Navier-Stokes equations to depict the droplet formation phenomena at the junction. Predicted results on the length and generated frequency of the microdroplets agree well with experimental results in a T-junction microchannel with straight and flat inlets (the base model) for both fluid flows. Empirical correlations are reported between the volumetric flow ratio and the dimensionless microdroplet length or dimensionless frequency of droplet generation at a fixed capillary number of 4.7 · 10-3. The results of this study indicate a reduction in the droplet length of approximately 21% if the straight inlet for the water flow is modified to a downstream sudden contraction inlet for the water flow.

  20. Mapping ionospheric backscatter measured by the SuperDARN HF radars – Part 2: Assessing SuperDARN virtual height models

    Directory of Open Access Journals (Sweden)

    T. K. Yeoman

    2008-05-01

    Full Text Available The Super Dual Auroral Radar Network (SuperDARN network of HF coherent backscatter radars form a unique global diagnostic of large-scale ionospheric and magnetospheric dynamics in the Northern and Southern Hemispheres. Currently the ground projections of the HF radar returns are routinely determined by a simple rangefinding algorithm, which takes no account of the prevailing, or indeed the average, HF propagation conditions. This is in spite of the fact that both direct E- and F-region backscatter and 1½-hop E- and F-region backscatter are commonly used in geophysical interpretation of the data. In a companion paper, Chisham et al. (2008 have suggested a new virtual height model for SuperDARN, based on average measured propagation paths. Over shorter propagation paths the existing rangefinding algorithm is adequate, but mapping errors become significant for longer paths where the roundness of the Earth becomes important, and a correct assumption of virtual height becomes more difficult. The SuperDARN radar at Hankasalmi has a propagation path to high power HF ionospheric modification facilities at both Tromsø on a ½-hop path and SPEAR on a 1½-hop path. The SuperDARN radar at Þykkvibǽr has propagation paths to both facilities over 1½-hop paths. These paths provide an opportunity to quantitatively test the available SuperDARN virtual height models. It is also possible to use HF radar backscatter which has been artificially induced by the ionospheric heaters as an accurate calibration point for the Hankasalmi elevation angle of arrival data, providing a range correction algorithm for the SuperDARN radars which directly uses elevation angle. These developments enable the accurate mappings of the SuperDARN electric field measurements which are required for the growing number of multi-instrument studies of the Earth's ionosphere and magnetosphere.

  1. Halogenation of SiC for band-gap engineering and excitonic functionalization

    Science.gov (United States)

    Drissi, L. B.; Ramadan, F. Z.; Lounis, S.

    2017-11-01

    The optical excitation spectra and excitonic resonances are investigated in systematically functionalized SiC with Fluorine and/or Chlorine utilizing density functional theory in combination with many-body perturbation theory. The latter is required for a realistic description of the energy band-gaps as well as for the theoretical realization of excitons. Structural, electronic and optical properties are scrutinized and show the high stability of the predicted two-dimensional materials. Their realization in laboratory is thus possible. Large band-gaps of the order of 4 eV are found in the so-called GW approximation, with the occurrence of bright excitons, optically active in the four investigated materials. Their binding energies vary from 0.9 eV to 1.75 eV depending on the decoration choice and in one case, a dark exciton is foreseen to exist in the fully chlorinated SiC. The wide variety of opto-electronic properties suggest halogenated SiC as interesting materials with potential not only for solar cell applications, anti-reflection coatings or high-reflective systems but also for a possible realization of excitonic Bose-Einstein condensation.

  2. Defect Characterization, Imaging, and Control in Wide-Bandgap Semiconductors and Devices

    Science.gov (United States)

    Brillson, L. J.; Foster, G. M.; Cox, J.; Ruane, W. T.; Jarjour, A. B.; Gao, H.; von Wenckstern, H.; Grundmann, M.; Wang, B.; Look, D. C.; Hyland, A.; Allen, M. W.

    2018-03-01

    Wide-bandgap semiconductors are now leading the way to new physical phenomena and device applications at nanoscale dimensions. The impact of defects on the electronic properties of these materials increases as their size decreases, motivating new techniques to characterize and begin to control these electronic states. Leading these advances have been the semiconductors ZnO, GaN, and related materials. This paper highlights the importance of native point defects in these semiconductors and describes how a complement of spatially localized surface science and spectroscopy techniques in three dimensions can characterize, image, and begin to control these electronic states at the nanoscale. A combination of characterization techniques including depth-resolved cathodoluminescence spectroscopy, surface photovoltage spectroscopy, and hyperspectral imaging can describe the nature and distribution of defects at interfaces at both bulk and nanoscale surfaces, their metal interfaces, and inside nanostructures themselves. These features as well as temperature and mechanical strain inside wide-bandgap device structures at the nanoscale can be measured even while these devices are operating. These advanced capabilities enable several new directions for describing defects at the nanoscale, showing how they contribute to device degradation, and guiding growth processes to control them.

  3. Super-leadership and work enjoyment: direct and moderated influences.

    Science.gov (United States)

    Müller, Günter F; Georgianna, Sibylle; Schermelleh-Engel, Karin; Roth, Anne C; Schreiber, Walter A; Sauerland, Martin; Muessigmann, Michael J; Jilg, Franziska

    2013-12-01

    Super-leadership is part of an approach called 'empowering leadership.' Within this approach, super-leadership is assumed to enable subordinates to lead themselves. The current study examined correlates of super-leadership. A questionnaire measuring two dimensions of super-leadership was used to analyze relationships between super-leadership and subordinates' work enjoyment, i.e., job satisfaction, subjective well-being, and emotional organizational commitment. In addition, moderating effects of the organizational context, i.e., organizational decentralization, on the relationships between super-leadership and work enjoyment were explored. 198 German employees from different occupations participated in the study. Latent moderator structural equation analysis revealed that the two factors of super-leadership, "coaching and communicative support" and "facilitation of personal autonomy and responsibility," had direct positive effects on subordinates' work enjoyment. Organizational decentralization moderated the effect of "coaching and communicative support" on work enjoyment but not the relations involving "facilitation of personal autonomy and responsibility." Conclusions for further research and practical applications were discussed.

  4. Tunable Bandgap and Optical Properties of Black Phosphorene Nanotubes

    Directory of Open Access Journals (Sweden)

    Chunmei Li

    2018-02-01

    Full Text Available Black phosphorus (BP, a new two-dimensional material, has been the focus of scientists’ attention. BP nanotubes have potential in the field of optoelectronics due to their low-dimensional effects. In this work, the bending strain energy, electronic structure, and optical properties of BP nanotubes were investigated by using the first-principles method based on density functional theory. The results show that these properties are closely related to the rolling direction and radius of the BP nanotube. All the calculated BP nanotube properties show direct bandgaps, and the BP nanotubes with the same rolling direction express a monotone increasing trend in the value of bandgap with a decrease in radius, which is a stacking effect of the compression strain on the inner atoms and the tension strain on the outer atoms. The bending strain energy of the zigzag phosphorene nanotubes (zPNTs is higher than that of armchair phosphorene nanotubes (aPNT with the same radius of curvature due to the anisotropy of the BP’s structure. The imaginary part of the dielectric function, the absorption range, reflectivity, and the imaginary part of the refractive index of aPNTs have a wider range than those of zPNTs, with higher values overall. As a result, tunable BP nanotubes are suitable for optoelectronic devices, such as lasers and diodes, which function in the infrared and ultra-violet regions, and for solar cells and photocatalysis.

  5. Optimal super dense coding over memory channels

    OpenAIRE

    Shadman, Zahra; Kampermann, Hermann; Macchiavello, Chiara; Bruß, Dagmar

    2011-01-01

    We study the super dense coding capacity in the presence of quantum channels with correlated noise. We investigate both the cases of unitary and non-unitary encoding. Pauli channels for arbitrary dimensions are treated explicitly. The super dense coding capacity for some special channels and resource states is derived for unitary encoding. We also provide an example of a memory channel where non-unitary encoding leads to an improvement in the super dense coding capacity.

  6. Super-insulation

    International Nuclear Information System (INIS)

    Gerold, J.

    1985-01-01

    The invention concerns super-insulation, which also acts as spacing between two pressurized surfaces, where the crossing bars in at least two layers are provided, with interposed foil. The super-insulation is designed so that it can take compression forces and limits thermal radiation and thermal conduction sufficiently, where the total density of heat flow is usually limited to a few watts per m 2 . The solution to the problem is characterized by the fact that the bars per layer are parallel and from layer to layer they are at an angle to each other and the crossover positions of the bars of different layers are at fixed places and so form contact columns. The basic idea is that bars crossing over each other to support compression forces are used so that contact columns are formed, which are compressed to a certain extent by the load. (orig./PW) [de

  7. Postgrowth tuning of the bandgap of single-layer molybdenum disulfide films by sulfur/selenium exchange.

    Science.gov (United States)

    Ma, Quan; Isarraraz, Miguel; Wang, Chen S; Preciado, Edwin; Klee, Velveth; Bobek, Sarah; Yamaguchi, Koichi; Li, Emily; Odenthal, Patrick Michael; Nguyen, Ariana; Barroso, David; Sun, Dezheng; von Son Palacio, Gretel; Gomez, Michael; Nguyen, Andrew; Le, Duy; Pawin, Greg; Mann, John; Heinz, Tony F; Rahman, Talat Shahnaz; Bartels, Ludwig

    2014-05-27

    We demonstrate bandgap tuning of a single-layer MoS2 film on SiO2/Si via substitution of its sulfur atoms by selenium through a process of gentle sputtering, exposure to a selenium precursor, and annealing. We characterize the substitution process both for S/S and S/Se replacement. Photoluminescence and, in the latter case, X-ray photoelectron spectroscopy provide direct evidence of optical band gap shift and selenium incorporation, respectively. We discuss our experimental observations, including the limit of the achievable bandgap shift, in terms of the role of stress in the film as elucidated by computational studies, based on density functional theory. The resultant films are stable in vacuum, but deteriorate under optical excitation in air.

  8. Characterising Super-Earths

    Directory of Open Access Journals (Sweden)

    Valencia D.

    2011-02-01

    Full Text Available The era of Super-Earths has formally begun with the detection of transiting low-mass exoplanets CoRoT-7b and GJ 1214b. In the path of characterising super-Earths, the first step is to infer their composition. While the discovery data for CoRoT-7b, in combination with the high atmospheric mass loss rate inferred from the high insolation, suggested that it was a rocky planet, the new proposed mass values have widened the possibilities. The combined mass range 1−10 M⊕ allows for a volatile-rich (and requires it if the mass is less than 4 M⊕ , an Earth-like or a super-Mercury-like composition. In contrast, the radius of GJ 1214b is too large to admit a solid composition, thus it necessarily to have a substantial gas layer. Some evidence suggests that within this gas layer H/He is a small but non-negligible component. These two planets are the first of many transiting low-mass exoplanets expected to be detected and they exemplify the limitations faced when inferring composition, which come from the degenerate character of the problem and the large error bars in the data.

  9. Opto-electronics of PbS quantum dot and narrow bandgap polymer blends

    NARCIS (Netherlands)

    Kahmann, Simon; Mura, Andrea; Protesescu, Loredana; Kovalenko, Maksym V.; Brabec, Christoph J.; Loi, Maria A.

    2015-01-01

    Here we report on the interaction between the narrow bandgap polymer [2,6-(4,4-bis(2-ethylhexyl)-4H-cyclopenta-[2,1-b;3,4-b]dithiophene)-alt-4,7-(2,1,3-benzothiadiazole)] (PCPDTBT) and lead sulphide (PbS) colloidal quantum dots (CQDs) upon photoexcitation. We show that the presence of both materials

  10. High bandgap III-V alloys for high efficiency optoelectronics

    Energy Technology Data Exchange (ETDEWEB)

    Alberi, Kirstin; Mascarenhas, Angelo; Wanlass, Mark

    2017-01-10

    High bandgap alloys for high efficiency optoelectronics are disclosed. An exemplary optoelectronic device may include a substrate, at least one Al.sub.1-xIn.sub.xP layer, and a step-grade buffer between the substrate and at least one Al.sub.1-xIn.sub.xP layer. The buffer may begin with a layer that is substantially lattice matched to GaAs, and may then incrementally increase the lattice constant in each sequential layer until a predetermined lattice constant of Al.sub.1-xIn.sub.xP is reached.

  11. Mode Division Multiplexing Exploring Hollow-Core Photonic Bandgap Fibers

    DEFF Research Database (Denmark)

    Xu, Jing; Lyngso, Jens Kristian; Leick, Lasse

    2013-01-01

    We review our recent exploratory investigations on mode division multiplexing using hollow-core photonic bandgap fibers (HC-PBGFs). Compared with traditional multimode fibers, HC-PBGFs have several attractive features such as ultra-low nonlinearities, low-loss transmission window around 2 µm etc....... After having discussed the potential and challenges of using HC-PBGFs as transmission fibers for mode multiplexing applications, we will report a number of recent proof-of-concept results obtained in our group using direct detection receivers. The first one is the transmission of two 10.7 Gbit/s non...

  12. Valley dependent transport in graphene L junction

    Science.gov (United States)

    Chan, K. S.

    2018-05-01

    We studied the valley dependent transport in graphene L junctions connecting an armchair lead and a zigzag lead. The junction can be used in valleytronic devices and circuits. Electrons injected from the armchair lead into the junction is not valley polarized, but they can become valley polarized in the zigzag lead. There are Fermi energies, where the current in the zigzag lead is highly valley polarized and the junction is an efficient generator of valley polarized current. The features of the valley polarized current depend sensitively on the widths of the two leads, as well as the number of dimers in the armchair lead, because this number has a sensitive effect on the band structure of the armchair lead. When an external potential is applied to the junction, the energy range with high valley polarization is enlarged enhancing its function as a generator of highly valley polarized current. The scaling behavior found in other graphene devices is also found in L junctions, which means that the results presented here can be extended to junctions with larger dimensions after appropriate scaling of the energy.

  13. Effects of weak nonlinearity on dispersion relations and frequency band-gaps of periodic structures

    DEFF Research Database (Denmark)

    Sorokin, Vladislav; Thomsen, Jon Juel

    2015-01-01

    of these for nonlinear problems is impossible or cumbersome, since Floquet theory is applicable for linear systems only. Thus the nonlinear effects for periodic structures are not yet fully uncovered, while at the same time applica-tions may demand effects of nonlinearity on structural response to be accounted for....... The present work deals with analytically predicting dynamic responses for nonlinear continuous elastic periodic structures. Specifically, the effects of weak nonlinearity on the dispersion re-lation and frequency band-gaps of a periodic Bernoulli-Euler beam performing bending os-cillations are analyzed......The analysis of the behaviour of linear periodic structures can be traced back over 300 years, to Sir Isaac Newton, and still attracts much attention. An essential feature of periodic struc-tures is the presence of frequency band-gaps, i.e. frequency ranges in which waves cannot propagate...

  14. Method of manufacturing Josephson junction integrated circuits

    International Nuclear Information System (INIS)

    Jillie, D.W. Jr.; Smith, L.N.

    1985-01-01

    Josephson junction integrated circuits of the current injection type and magnetically controlled type utilize a superconductive layer that forms both Josephson junction electrode for the Josephson junction devices on the integrated circuit as well as a ground plane for the integrated circuit. Large area Josephson junctions are utilized for effecting contact to lower superconductive layers and islands are formed in superconductive layers to provide isolation between the groudplane function and the Josephson junction electrode function as well as to effect crossovers. A superconductor-barrier-superconductor trilayer patterned by local anodization is also utilized with additional layers formed thereover. Methods of manufacturing the embodiments of the invention are disclosed

  15. Metallic photonic band-gap materials

    International Nuclear Information System (INIS)

    Sigalas, M.M.; Chan, C.T.; Ho, K.M.; Soukoulis, C.M.

    1995-01-01

    We calculate the transmission and absorption of electromagnetic waves propagating in two-dimensional (2D) and 3D periodic metallic photonic band-gap (PBG) structures. For 2D systems, there is substantial difference between the s- and p-polarized waves. The p-polarized waves exhibit behavior similar to the dielectric PBG's. But, the s-polarized waves have a cutoff frequency below which there are no propagating modes. For 3D systems, the results are qualitatively the same for both polarizations but there are important differences related to the topology of the structure. For 3D structures with isolated metallic scatterers (cermet topology), the behavior is similar to that of the dielectric PBG's, while for 3D structures with the metal forming a continuous network (network topology), there is a cutoff frequency below which there are no propagating modes. The systems with the network topology may have some interesting applications for frequencies less than about 1 THz where the absorption can be neglected. We also study the role of the defects in the metallic structures

  16. delta-biased Josephson tunnel junctions

    DEFF Research Database (Denmark)

    Monaco, R.; Mygind, Jesper; Koshelet, V.

    2010-01-01

    Abstract: The behavior of a long Josephson tunnel junction drastically depends on the distribution of the dc bias current. We investigate the case in which the bias current is fed in the central point of a one-dimensional junction. Such junction configuration has been recently used to detect...... the persistent currents circulating in a superconducting loop. Analytical and numerical results indicate that the presence of fractional vortices leads to remarkable differences from the conventional case of uniformly distributed dc bias current. The theoretical findings are supported by detailed measurements...

  17. Junction depth measurement using carrier illumination

    International Nuclear Information System (INIS)

    Borden, Peter

    2001-01-01

    Carrier Illumination [trade mark] (CI) is a new method recently developed to meet the need for a non-destructive, high throughput junction depth measurement on patterned wafers. A laser beam creates a quasi-static excess carrier profile in the semiconductor underlying the activated junction. The excess carrier profile is fairly constant below the junction, and drops rapidly in the junction, creating a steep index of refraction gradient at the junction edge. Interference with light reflected from this index gradient provides a signal that is analyzed to determine the junction depth. The paper summarizes evaluation of performance in full NMOS and PMOS process flows, on both bare and patterned wafers. The aims have been to validate (1) performance in the presence of underlying layers typically found at the source/drain (S/D) process steps and (2) measurement on patterned wafers. Correlation of CI measurements to SIMS and transistor drive current are shown. The data were obtained from NMOS structures using As S/D and LDD implants. Correlations to SRP, SIMS and sheet resistance are shown for PMOS structures using B 11 LDD implants. Gage capability measurements are also presented

  18. Charm Physics at SuperB

    International Nuclear Information System (INIS)

    Meadows, Brian; Bevan, Adrian

    2010-01-01

    The study of Charm Decays at SuperB provide unique opportunities to understand the Standard Model and constrain new physics, both at the Y(4S), and at charm threshold. We discuss the physics potential of such measurements from the proposed SuperB experiment with 75 ab -1 of data at the Y(4S) and a subsequent run dedicated to exploiting quantum correlations at the charm threshold. (author)

  19. NETL Super Computer

    Data.gov (United States)

    Federal Laboratory Consortium — The NETL Super Computer was designed for performing engineering calculations that apply to fossil energy research. It is one of the world’s larger supercomputers,...

  20. Hysteresis development in superconducting Josephson junctions

    International Nuclear Information System (INIS)

    Refai, T.F.; Shehata, L.N.

    1988-09-01

    The resistively and capacitive shunted junction model is used to investigate hysteresis development in superconducting Josephson junctions. Two empirical formulas that relate the hysteresis width and the quasi-particle diffusion length in terms of the junctions electrical parameters, temperature and frequency are obtained. The obtained formulas provide a simple tool to investigate the full potentials of the hysteresis phenomena. (author). 9 refs, 3 figs

  1. Microsphere-based super-resolution scanning optical microscope.

    Science.gov (United States)

    Huszka, Gergely; Yang, Hui; Gijs, Martin A M

    2017-06-26

    High-refractive index dielectric microspheres positioned within the field of view of a microscope objective in a dielectric medium can focus the light into a so-called photonic nanojet. A sample placed in such nanojet can be imaged by the objective with super-resolution, i.e. with a resolution beyond the classical diffraction limit. However, when imaging nanostructures on a substrate, the propagation distance of a light wave in the dielectric medium in between the substrate and the microsphere must be small enough to reveal the sample's nanometric features. Therefore, only the central part of an image obtained through a microsphere shows super-resolution details, which are typically ∼100 nm using white light (peak at λ = 600 nm). We have performed finite element simulations of the role of this critical distance in the super-resolution effect. Super-resolution imaging of a sample placed beneath the microsphere is only possible within a very restricted central area of ∼10 μm 2 , where the separation distance between the substrate and the microsphere surface is very small (∼1 μm). To generate super-resolution images over larger areas of the sample, we have fixed a microsphere on a frame attached to the microscope objective, which is automatically scanned over the sample in a step-by-step fashion. This generates a set of image tiles, which are subsequently stitched into a single super-resolution image (with resolution of λ/4-λ/5) of a sample area of up to ∼10 4 μm 2 . Scanning a standard optical microscope objective with microsphere therefore enables super-resolution microscopy over the complete field-of-view of the objective.

  2. Presynaptic active zones of mammalian neuromuscular junctions: Nanoarchitecture and selective impairments in aging.

    Science.gov (United States)

    Badawi, Yomna; Nishimune, Hiroshi

    2018-02-01

    Neurotransmitter release occurs at active zones, which are specialized regions of the presynaptic membrane. A dense collection of proteins at the active zone provides a platform for molecular interactions that promote recruitment, docking, and priming of synaptic vesicles. At mammalian neuromuscular junctions (NMJs), muscle-derived laminin β2 interacts with presynaptic voltage-gated calcium channels to organize active zones. The molecular architecture of presynaptic active zones has been revealed using super-resolution microscopy techniques that combine nanoscale resolution and multiple molecular identification. Interestingly, the active zones of adult NMJs are not stable structures and thus become impaired during aging due to the selective degeneration of specific active zone proteins. This review will discuss recent progress in the understanding of active zone nanoarchitecture and the mechanisms underlying active zone organization in mammalian NMJs. Furthermore, we will summarize the age-related degeneration of active zones at NMJs, and the role of exercise in maintaining active zones. Copyright © 2017 Elsevier Ireland Ltd and Japan Neuroscience Society. All rights reserved.

  3. The SuperB Project: Status and the Physics Reach

    International Nuclear Information System (INIS)

    Neri, Nicola

    2012-01-01

    The SuperB experiment is a next generation Super Flavour Factory expected to accumulate 75 ab −1 of data at the Υ(4S) in five years of nominal running, and will be built at the recently established Cabibbo Laboratory on the outskirts of Rome. In addition to running data at the Υ(4S), SuperB will be able to accumulate data from the ψ(3770) up to the Υ(6S). A polarized electron beam enables unique physics opportunities at SuperB. The large samples of B, D and τ decays that will be recorded at SuperB can be used to provide both stringent constraints on new physics scenarios, and over-constraints on the Standard Model. We present the status of the project as well as the physics potential of SuperB.

  4. Super-resolution

    DEFF Research Database (Denmark)

    Nasrollahi, Kamal; Moeslund, Thomas B.

    2014-01-01

    Super-resolution, the process of obtaining one or more high-resolution images from one or more low-resolution observations, has been a very attractive research topic over the last two decades. It has found practical applications in many real world problems in different fields, from satellite...

  5. Multisensor Super Resolution Using Directionally-Adaptive Regularization for UAV Images.

    Science.gov (United States)

    Kang, Wonseok; Yu, Soohwan; Ko, Seungyong; Paik, Joonki

    2015-05-22

    In various unmanned aerial vehicle (UAV) imaging applications, the multisensor super-resolution (SR) technique has become a chronic problem and attracted increasing attention. Multisensor SR algorithms utilize multispectral low-resolution (LR) images to make a higher resolution (HR) image to improve the performance of the UAV imaging system. The primary objective of the paper is to develop a multisensor SR method based on the existing multispectral imaging framework instead of using additional sensors. In order to restore image details without noise amplification or unnatural post-processing artifacts, this paper presents an improved regularized SR algorithm by combining the directionally-adaptive constraints and multiscale non-local means (NLM) filter. As a result, the proposed method can overcome the physical limitation of multispectral sensors by estimating the color HR image from a set of multispectral LR images using intensity-hue-saturation (IHS) image fusion. Experimental results show that the proposed method provides better SR results than existing state-of-the-art SR methods in the sense of objective measures.

  6. Photolithography of thick photoresist coating for electrically controlled liquid crystal photonic bandgap fibre devices

    DEFF Research Database (Denmark)

    Wei, Lei; Khomtchenko, Elena; Alkeskjold, Thomas Tanggaard

    2009-01-01

    Thick photoresist coating for electrode patterning in an anisotropically etched V-groove is investigated for electrically controlled liquid crystal photonic bandgap fibre devices. The photoresist step coverage at the convex corners is compared with and without soft baking after photoresist spin...

  7. Fabrication of Josephson Junction without shadow evaporation

    Science.gov (United States)

    Wu, Xian; Ku, Hsiangsheng; Long, Junling; Pappas, David

    We developed a new method of fabricating Josephson Junction (Al/AlOX/Al) without shadow evaporation. Statistics from room temperature junction resistance and measurement of qubits are presented. Unlike the traditional ``Dolan Bridge'' technique, this method requires two individual lithographies and straight evaporations of Al. Argon RF plasma is used to remove native AlOX after the first evaporation, followed by oxidation and second Al evaporation. Junction resistance measured at room temperature shows linear dependence on Pox (oxidation pressure), √{tox} (oxidation time), and inverse proportional to junction area. We have seen 100% yield of qubits made with this method. This method is promising because it eliminates angle dependence during Junction fabrication, facilitates large scale qubits fabrication.

  8. Quantum synchronization effects in intrinsic Josephson junctions

    International Nuclear Information System (INIS)

    Machida, M.; Kano, T.; Yamada, S.; Okumura, M.; Imamura, T.; Koyama, T.

    2008-01-01

    We investigate quantum dynamics of the superconducting phase in intrinsic Josephson junctions of layered high-T c superconductors motivated by a recent experimental observation for the switching rate enhancement in the low temperature quantum regime. We pay attention to only the capacitive coupling between neighboring junctions and perform large-scale simulations for the Schroedinger equation derived from the Hamiltonian considering the capacitive coupling alone. The simulation focuses on an issue whether the switching of a junction induces those of the other junctions or not. The results reveal that the superconducting phase dynamics show synchronous behavior with increasing the quantum character, e.g., decreasing the junction plane area and effectively the temperature. This is qualitatively consistent with the experimental result

  9. Super-resolution pupil filtering for visual performance enhancement using adaptive optics

    Science.gov (United States)

    Zhao, Lina; Dai, Yun; Zhao, Junlei; Zhou, Xiaojun

    2018-05-01

    Ocular aberration correction can significantly improve visual function of the human eye. However, even under ideal aberration correction conditions, pupil diffraction restricts the resolution of retinal images. Pupil filtering is a simple super-resolution (SR) method that can overcome this diffraction barrier. In this study, a 145-element piezoelectric deformable mirror was used as a pupil phase filter because of its programmability and high fitting accuracy. Continuous phase-only filters were designed based on Zernike polynomial series and fitted through closed-loop adaptive optics. SR results were validated using double-pass point spread function images. Contrast sensitivity was further assessed to verify the SR effect on visual function. An F-test was conducted for nested models to statistically compare different CSFs. These results indicated CSFs for the proposed SR filter were significantly higher than the diffraction correction (p vision optical correction of the human eye.

  10. FPGA-based quench detection system for super-FRS super-ferric dipole prototype

    International Nuclear Information System (INIS)

    Yang Tongjun; Wu Wei; Yao Qinggao; Yuan Ping; He Yuan; Han Shaofei; Ma Lizhen

    2011-01-01

    The quench detection system for Super-FRS super-ferric dipole prototype magnet of FAIR has been designed and built. The balance bridge was used to detect quench signal. In order to avoid blind zone of quench detection, two independent bridges were used. NI PXI-7830R FPGA was used to implement filter to quench signal and algorithm of quench decision and to produce quench trigger signal. Pre-sample technique was used in quench data acquisition. The data before and after quench could be recorded for analysis later. The test result indicated that the quench of the dipole's superconducting coil could be reliably detected by the quench detection module. (authors)

  11. Correlation between Photoluminescence and Carrier Transport and a Simple In Situ Passivation Method for High-Bandgap Hybrid Perovskites.

    Science.gov (United States)

    Stoddard, Ryan J; Eickemeyer, Felix T; Katahara, John K; Hillhouse, Hugh W

    2017-07-20

    High-bandgap mixed-halide hybrid perovskites have higher open-circuit voltage deficits and lower carrier diffusion lengths than their lower-bandgap counterparts. We have developed a ligand-assisted crystallization (LAC) technique that introduces additives in situ during the solvent wash and developed a new method to dynamically measure the absolute intensity steady-state photoluminescence and the mean carrier diffusion length simultaneously. The measurements reveal four distinct regimes of material changes and show that photoluminescence brightening often coincides with losses in carrier transport, such as in degradation or phase segregation. Further, the measurements enabled optimization of LAC on the 1.75 eV bandgap FA 0.83 Cs 0.17 Pb(I 0.66 Br 0.34 ) 3 , resulting in an enhancement of the photoluminescence quantum yield (PLQY) of over an order of magnitude, an increase of 80 meV in the quasi-Fermi level splitting (to 1.29 eV), an increase in diffusion length by a factor of 3.5 (to over 1 μm), and enhanced open-circuit voltage and short-circuit current from photovoltaics fabricated from the LAC-treated films.

  12. Transitions of bandgap and built-in stress for sputtered HfZnO thin films after thermal treatments

    Energy Technology Data Exchange (ETDEWEB)

    Li, Chih-Hung; Chen, Jian-Zhang [Institute of Applied Mechanics, National Taiwan University, Taipei City 10617, Taiwan (China); Cheng, I-Chun [Graduate Institute of Photonics and Optoelectronics and Department of Electrical Engineering, National Taiwan University, Taipei City 10617, Taiwan (China)

    2013-08-28

    HfZnO thin films with various Hf contents are sputter-deposited on glass substrates from Hf{sub x}Zn{sub 1−x}O (x = 0, 2.5, 5, 7.5, and 10 at. %) targets at room temperature. The incorporation of Hf in the ZnO film leads to the amorphorization of the materials. The amorphous structures of high-Hf-content films remain after annealing at 600 °C for 30 min. The built-in stresses of as-deposited films are compressive. As the annealing temperature increases, the stresses are relaxed and even become tensile. The films exhibit a high transmission of 80% in the visible region. The optical bandgap increases with the Hf content, but it decreases with the annealing temperature. This can be attributed to the alteration of strain (stress) status in the films and atomic substitution. The reduction of bandgap partly results from the grain growth, which is due to the quantum confinement effect of the small grains. Hf doping increases the resistivity of ZnO owing to the disorder of the material structure and the higher bandgap, which result in more carrier traps and less thermally excited carriers in the conduction bands.

  13. Characterization of vertical GaN p–n diodes and junction field-effect transistors on bulk GaN down to cryogenic temperatures

    International Nuclear Information System (INIS)

    Kizilyalli, I C; Aktas, O

    2015-01-01

    There is great interest in wide-bandgap semiconductor devices and most recently in vertical GaN structures for power electronic applications such as power supplies, solar inverters and motor drives. In this paper the temperature-dependent electrical behavior of vertical GaN p–n diodes and vertical junction field-effect transistors fabricated on bulk GaN substrates of low defect density (10 4 to 10 6 cm −2 ) is described. Homoepitaxial MOCVD growth of GaN on its native substrate and the ability to control the doping in the drift layers in GaN have allowed the realization of vertical device architectures with drift layer thicknesses of 6 to 40 μm and net carrier electron concentrations as low as 1 × 10 15 cm −3 . This parameter range is suitable for applications requiring breakdown voltages of 1.2 kV to 5 kV. Mg, which is used as a p-type dopant in GaN, is a relatively deep acceptor (E A  ≈ 0.18 eV) and susceptible to freeze-out at temperatures below 200 K. The loss of holes in p-GaN has a deleterious effect on p–n junction behavior, p-GaN contacts and channel control in junction field-effect transistors at temperatures below 200 K. Impact ionization-based avalanche breakdown (BV > 1200 V) in GaN p–n junctions is characterized between 77 K and 423 K for the first time. At higher temperatures the p–n junction breakdown voltage improves due to increased phonon scattering. A positive temperature coefficient in the breakdown voltage is demonstrated down to 77 K; however, the device breakdown characteristics are not as abrupt at temperatures below 200 K. On the other hand, contact resistance to p-GaN is reduced dramatically above room temperature, improving the overall device performance in GaN p–n diodes in all cases except where the n-type drift region resistance dominates the total forward resistance. In this case, the electron mobility can be deconvolved and is found to decrease with T −3/2 , consistent with a phonon scattering model. Also

  14. Entropy Flow Through Near-Critical Quantum Junctions

    Science.gov (United States)

    Friedan, Daniel

    2017-05-01

    This is the continuation of Friedan (J Stat Phys, 2017. doi: 10.1007/s10955-017-1752-8). Elementary formulas are derived for the flow of entropy through a circuit junction in a near-critical quantum circuit close to equilibrium, based on the structure of the energy-momentum tensor at the junction. The entropic admittance of a near-critical junction in a bulk-critical circuit is expressed in terms of commutators of the chiral entropy currents. The entropic admittance at low frequency, divided by the frequency, gives the change of the junction entropy with temperature—the entropic "capacitance". As an example, and as a check on the formalism, the entropic admittance is calculated explicitly for junctions in bulk-critical quantum Ising circuits (free fermions, massless in the bulk), in terms of the reflection matrix of the junction. The half-bit of information capacity per end of critical Ising wire is re-derived by integrating the entropic "capacitance" with respect to temperature, from T=0 to T=∞.

  15. Ab initio quasi-particle approximation bandgaps of silicon nanowires calculated at density functional theory/local density approximation computational effort

    Energy Technology Data Exchange (ETDEWEB)

    Ribeiro, M., E-mail: ribeiro.jr@oorbit.com.br [Office of Operational Research for Business Intelligence and Technology, Principal Office, Buffalo, Wyoming 82834 (United States)

    2015-06-21

    Ab initio calculations of hydrogen-passivated Si nanowires were performed using density functional theory within LDA-1/2, to account for the excited states properties. A range of diameters was calculated to draw conclusions about the ability of the method to correctly describe the main trends of bandgap, quantum confinement, and self-energy corrections versus the diameter of the nanowire. Bandgaps are predicted with excellent accuracy if compared with other theoretical results like GW, and with the experiment as well, but with a low computational cost.

  16. Ab initio quasi-particle approximation bandgaps of silicon nanowires calculated at density functional theory/local density approximation computational effort

    International Nuclear Information System (INIS)

    Ribeiro, M.

    2015-01-01

    Ab initio calculations of hydrogen-passivated Si nanowires were performed using density functional theory within LDA-1/2, to account for the excited states properties. A range of diameters was calculated to draw conclusions about the ability of the method to correctly describe the main trends of bandgap, quantum confinement, and self-energy corrections versus the diameter of the nanowire. Bandgaps are predicted with excellent accuracy if compared with other theoretical results like GW, and with the experiment as well, but with a low computational cost

  17. Oblique reconstructions in tomosynthesis. II. Super-resolution

    International Nuclear Information System (INIS)

    Acciavatti, Raymond J.; Maidment, Andrew D. A.

    2013-01-01

    Purpose: In tomosynthesis, super-resolution has been demonstrated using reconstruction planes parallel to the detector. Super-resolution allows for subpixel resolution relative to the detector. The purpose of this work is to develop an analytical model that generalizes super-resolution to oblique reconstruction planes.Methods: In a digital tomosynthesis system, a sinusoidal test object is modeled along oblique angles (i.e., “pitches”) relative to the plane of the detector in a 3D divergent-beam acquisition geometry. To investigate the potential for super-resolution, the input frequency is specified to be greater than the alias frequency of the detector. Reconstructions are evaluated in an oblique plane along the extent of the object using simple backprojection (SBP) and filtered backprojection (FBP). By comparing the amplitude of the reconstruction against the attenuation coefficient of the object at various frequencies, the modulation transfer function (MTF) is calculated to determine whether modulation is within detectable limits for super-resolution. For experimental validation of super-resolution, a goniometry stand was used to orient a bar pattern phantom along various pitches relative to the breast support in a commercial digital breast tomosynthesis system.Results: Using theoretical modeling, it is shown that a single projection image cannot resolve a sine input whose frequency exceeds the detector alias frequency. The high frequency input is correctly visualized in SBP or FBP reconstruction using a slice along the pitch of the object. The Fourier transform of this reconstructed slice is maximized at the input frequency as proof that the object is resolved. Consistent with the theoretical results, experimental images of a bar pattern phantom showed super-resolution in oblique reconstructions. At various pitches, the highest frequency with detectable modulation was determined by visual inspection of the bar patterns. The dependency of the highest

  18. Oblique reconstructions in tomosynthesis. II. Super-resolution

    Science.gov (United States)

    Acciavatti, Raymond J.; Maidment, Andrew D. A.

    2013-01-01

    Purpose: In tomosynthesis, super-resolution has been demonstrated using reconstruction planes parallel to the detector. Super-resolution allows for subpixel resolution relative to the detector. The purpose of this work is to develop an analytical model that generalizes super-resolution to oblique reconstruction planes. Methods: In a digital tomosynthesis system, a sinusoidal test object is modeled along oblique angles (i.e., “pitches”) relative to the plane of the detector in a 3D divergent-beam acquisition geometry. To investigate the potential for super-resolution, the input frequency is specified to be greater than the alias frequency of the detector. Reconstructions are evaluated in an oblique plane along the extent of the object using simple backprojection (SBP) and filtered backprojection (FBP). By comparing the amplitude of the reconstruction against the attenuation coefficient of the object at various frequencies, the modulation transfer function (MTF) is calculated to determine whether modulation is within detectable limits for super-resolution. For experimental validation of super-resolution, a goniometry stand was used to orient a bar pattern phantom along various pitches relative to the breast support in a commercial digital breast tomosynthesis system. Results: Using theoretical modeling, it is shown that a single projection image cannot resolve a sine input whose frequency exceeds the detector alias frequency. The high frequency input is correctly visualized in SBP or FBP reconstruction using a slice along the pitch of the object. The Fourier transform of this reconstructed slice is maximized at the input frequency as proof that the object is resolved. Consistent with the theoretical results, experimental images of a bar pattern phantom showed super-resolution in oblique reconstructions. At various pitches, the highest frequency with detectable modulation was determined by visual inspection of the bar patterns. The dependency of the highest

  19. Super-cool Dark Matter arXiv

    CERN Document Server

    Hambye, Thomas; Teresi, Daniele

    In dimension-less theories of dynamical generation of the weak scale, the Universe can undergo a period of low-scale inflation during which all particles are massless and super-cool. This leads to a new mechanism of generation of the cosmological Dark Matter (DM) relic density: super-cooling can easily suppress the amount of DM to the desired level. This is achieved for TeV-scale DM, if super-cooling ends when quark condensates form at the QCD phase transition. Along this scenario, the baryon asymmetry can be generated either at the phase transition or through leptogenesis. We show that the above mechanism takes place in old and new dimension-less models.

  20. A note on the super AKNS equations

    International Nuclear Information System (INIS)

    Li Yishen; Zhang Lining.

    1986-10-01

    We find some relationships between the usual AKNS scheme with the super one, when its elements take value from the Grassmann algebra on a two-dimensional vector space. The solutions of these super AKNS equations are discussed. (author)

  1. Overlap junctions for high coherence superconducting qubits

    Science.gov (United States)

    Wu, X.; Long, J. L.; Ku, H. S.; Lake, R. E.; Bal, M.; Pappas, D. P.

    2017-07-01

    Fabrication of sub-micron Josephson junctions is demonstrated using standard processing techniques for high-coherence, superconducting qubits. These junctions are made in two separate lithography steps with normal-angle evaporation. Most significantly, this work demonstrates that it is possible to achieve high coherence with junctions formed on aluminum surfaces cleaned in situ by Ar plasma before junction oxidation. This method eliminates the angle-dependent shadow masks typically used for small junctions. Therefore, this is conducive to the implementation of typical methods for improving margins and yield using conventional CMOS processing. The current method uses electron-beam lithography and an additive process to define the top and bottom electrodes. Extension of this work to optical lithography and subtractive processes is discussed.

  2. Surface-Enhanced Raman Scattering in Molecular Junctions.

    Science.gov (United States)

    Iwane, Madoka; Fujii, Shintaro; Kiguchi, Manabu

    2017-08-18

    Surface-enhanced Raman scattering (SERS) is a surface-sensitive vibrational spectroscopy that allows Raman spectroscopy on a single molecular scale. Here, we present a review of SERS from molecular junctions, in which a single molecule or molecules are made to have contact from the top to the bottom of metal surfaces. The molecular junctions are nice platforms for SERS as well as transport measurement. Electronic characterization based on the transport measurements of molecular junctions has been extensively studied for the development of miniaturized electronic devices. Simultaneous SERS and transport measurement of the molecular junctions allow both structural (geometrical) and electronic information on the single molecule scale. The improvement of SERS measurement on molecular junctions open the door toward new nanoscience and nanotechnology in molecular electronics.

  3. N=2 super - W3(2) algebra in superfields

    International Nuclear Information System (INIS)

    Krivonos, S.; Sorin, A.

    1995-05-01

    It is presented a manifestly N=2 supersymmetric formulation of N=2 super-W 3 (2) algebra (its classical version) in terms of the spin 1 unconstrained generating a N=2 superconformal subalgebra and the spins 1/2, 2 fermionic constrained supercurrents. It is considered a superfield reduction of N=2 super-W 3 (2) to N=2 super-W 3 and construct a family of evolution equations for which N=2 super-W 3 (2) provides the second Hamiltonian structure

  4. Exact solution of super Liouville model

    International Nuclear Information System (INIS)

    Yang Zhanying; Zhao Liu; Zhen Yi

    2000-01-01

    Using Leznov-Saveliev algebraic analysis and Drinfeld-Sokolov construction, the authors obtained the explicit solutions to the super Liouville system in super covariant form and component form. The explicit solution in component form reduces naturally into the Egnchi-Hanson instanton solution of the usual Liouville equation if all the Grassmann odd components are set equal to zero

  5. Primary Tunnel Junction Thermometry

    International Nuclear Information System (INIS)

    Pekola, Jukka P.; Holmqvist, Tommy; Meschke, Matthias

    2008-01-01

    We describe the concept and experimental demonstration of primary thermometry based on a four-probe measurement of a single tunnel junction embedded within four arrays of junctions. We show that in this configuration random sample specific and environment-related errors can be avoided. This method relates temperature directly to Boltzmann constant, which will form the basis of the definition of temperature and realization of official temperature scales in the future

  6. Ginzburg–Landau theory of mesoscopic multi-band Josephson junctions

    Energy Technology Data Exchange (ETDEWEB)

    Romeo, F.; De Luca, R., E-mail: rdeluca@unisa.it

    2017-05-15

    Highlights: • We generalize, in the realm of the Ginzburg–Landau theory, the de Gennes matching-matrix method for the interface order parameters to describe the superconducting properties of multi-band mesoscopic Josephson junctions. • The results are in agreement with a microscopic treatment of nanobridge junctions. • Thermal stability of the nanobridge junction is discussed in connection with recent experiments on iron-based grain-boundary junctions. - Abstract: A Ginzburg–Landau theory for multi-band mesoscopic Josephson junctions has been developed. The theory, obtained by generalizing the de Gennes matching-matrix method for the interface order parameters, allows the study of the phase dynamics of various types of mesoscopic Josephson junctions. As a relevant application, we studied mesoscopic double-band junctions also in the presence of a superconducting nanobridge interstitial layer. The results are in agreement with a microscopic treatment of the same system. Furthermore, thermal stability of the nanobridge junction is discussed in connection with recent experiments on iron-based grain-boundary junctions.

  7. Siting the superconducting super collider

    International Nuclear Information System (INIS)

    Price, R.; Rooney, R.C.

    1988-01-01

    At the request of the Department of Energy, the National Academy of Sciences and the National Academy of Engineering established the Super Collider Site Evaluation Committee to evaluate the suitability of proposed sites for the Superconducting Super Collider. Thirty-six proposals were examined by the committee. Using the set of criteria announced by DOE in its Invitation for Site Proposals, the committee identified eight sites that merited inclusion on a ''best qualified list.'' The list represents the best collective judgment of 21 individuals, carefully chosen for their expertise and impartiality, after a detailed assessment of the proposals using 19 technical subcriteria and DOE's life cycle cost estimates. The sites, in alphabetical order, are: Arizona/Maricopa; Colorado; Illinois; Michigan/Stockbridge; New York/Rochester; North Carolina; Tennessee; and Texas/Dallas-Fort Worth. The evaluation of these sites and the Superconducting Super Collider are discussed in this book

  8. Establishment of a universal and rational gene detection strategy through three-way junction-based remote transduction.

    Science.gov (United States)

    Tang, Yidan; Lu, Baiyang; Zhu, Zhentong; Li, Bingling

    2018-01-21

    The polymerase chain reaction and many isothermal amplifications are able to achieve super gene amplification. Unfortunately, most commonly-used transduction methods, such as dye staining and Taqman-like probing, still suffer from shortcomings including false signals or difficult probe design, or are incompatible with multi-analysis. Here a universal and rational gene detection strategy has been established by translating isothermal amplicons to enzyme-free strand displacement circuits via three-way junction-based remote transduction. An assistant transduction probe was imported to form a partial hybrid with the target single-stranded nucleic acid. After systematic optimization the hybrid could serve as an associative trigger to activate a downstream circuit detector via a strand displacement reaction across the three-way junction. By doing so, the detection selectivity can be double-guaranteed through both amplicon-transducer recognition and the amplicon-circuit reaction. A well-optimized circuit can be immediately applied to a new target detection through simply displacing only 10-12 nt on only one component, according to the target. More importantly, this property for the first time enables multi-analysis and logic-analysis in a single reaction, sharing a single fluorescence reporter. In an applicable model, trace amounts of Cronobacter and Enterobacteria genes have been clearly distinguished from samples with no bacteria or one bacterium, with ultra-high sensitivity and selectivity.

  9. The influence of junction conformation on RNA cleavage by the hairpin ribozyme in its natural junction form.

    Science.gov (United States)

    Thomson, J B; Lilley, D M

    1999-01-01

    In the natural form of the hairpin ribozyme the two loop-carrying duplexes that comprise the majority of essential bases for activity form two adjacent helical arms of a four-way RNA junction. In the present work we have manipulated the sequence around the junction in a way known to perturb the global folding properties. We find that replacement of the junction by a different sequence that has the same conformational properties as the natural sequence gives closely similar reaction rate and Arrhenius activation energy for the substrate cleavage reaction. By comparison, rotation of the natural sequence in order to alter the three-dimensional folding of the ribozyme leads to a tenfold reduction in the kinetics of cleavage. Replacement with the U1 four-way junction that is resistant to rotation into the antiparallel structure required to allow interaction between the loops also gives a tenfold reduction in cleavage rate. The results indicate that the conformation of the junction has a major influence on the catalytic activity of the ribozyme. The results are all consistent with a role for the junction in the provision of a framework by which the loops are presented for interaction in order to create the active form of the ribozyme. PMID:10024170

  10. High-Temperature, Wirebondless, Ultra-Compact Wide Bandgap Power Semiconductor Modules for Space Power Systems, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — Silicon carbide (SiC) and other wide band-gap semiconductors offer great promise of high power rating, high operating temperature, simple thermal management, and...

  11. Transmission properties of hollow-core photonic bandgap fibers in relation to molecular spectroscopy

    DEFF Research Database (Denmark)

    Falk, Charlotte Ijeoma; Hald, Jan; Petersen, Jan C.

    2010-01-01

    The transmission properties of five types of hollow-core photonic bandgap fibers (HC-PBFs) are characterized in the telecom wavelength range around 1:5 μm. The variations in optical transmission are measured as a function of laser frequency over a 2GHz scan range as well as a function of time over...

  12. Design of thin InGaAsN(Sb) n-i-p junctions for use in four-junction concentrating photovoltaic devices

    Science.gov (United States)

    Wilkins, Matthew M.; Gupta, James; Jaouad, Abdelatif; Bouzazi, Boussairi; Fafard, Simon; Boucherif, Abderraouf; Valdivia, Christopher E.; Arès, Richard; Aimez, Vincent; Schriemer, Henry P.; Hinzer, Karin

    2017-04-01

    Four-junction solar cells for space and terrestrial applications require a junction with a band gap of ˜1 eV for optimal performance. InGaAsN or InGaAsN(Sb) dilute nitride junctions have been demonstrated for this purpose, but in achieving the 14 mA/cm2 short-circuit current needed to match typical GaInP and GaAs junctions, the open-circuit voltage (VOC) and fill factor of these junctions are compromised. In multijunction devices incorporating materials with short diffusion lengths, we study the use of thin junctions to minimize sensitivity to varying material quality and ensure adequate transmission into lower junctions. An n-i-p device with 0.65-μm absorber thickness has sufficient short-circuit current, however, it relies less heavily on field-aided collection than a device with a 1-μm absorber. Our standard cell fabrication process, which includes a rapid thermal anneal of the contacts, yields a significant improvement in diffusion length and device performance. By optimizing a four-junction cell around a smaller 1-sun short-circuit current of 12.5 mA/cm2, we produced an InGaAsN(Sb) junction with open-circuit voltage of 0.44 V at 1000 suns (1 sun=100 mW/cm2), diode ideality factor of 1.4, and sufficient light transmission to allow >12.5 mA/cm2 in all four subcells.

  13. Harmonic synchronization in resistively coupled Josephson junctions

    International Nuclear Information System (INIS)

    Blackburn, J.A.; Gronbech-Jensen, N.; Smith, H.J.T.

    1994-01-01

    The oscillations of two resistively coupled Josephson junctions biased only by a single dc current source are shown to lock harmonically in a 1:2 mode over a significant range of bias current, even when the junctions are identical. The dependence of this locking on both junction and coupling parameters is examined, and it is found that, for this particular two-junction configuration, 1:1 locking can never occur, and also that a minimum coupling coefficient is needed to support harmonic locking. Some issues related to subharmonic locking are also discussed

  14. LETTER TO THE EDITOR: Green emission and bandgap narrowing due to two-photon excitation in thin film CdS formed by spray pyrolysis

    Science.gov (United States)

    Ullrich, B.; Schroeder, R.

    2001-08-01

    Thin (10 µm) film CdS on Pyrex® formed by spray pyrolysis is excited below the gap at 804 nm with 200 fs laser pulses at room temperature. Excitation intensities up to 250 GW cm-2 evoke green bandgap emission due to two-photon transitions. This two-photon photoluminescence does not show a red emission contribution in contrast to the single-photon excited emission, which is dominated by broad emission in the red spectral range. It is demonstrated that two-photon excitation causes photo-induced bandgap narrowing due to Debye screening. At 250 GW cm-2 bandgap narrowing of 47 meV is observed, which corresponds to an excited electron density of 1.6×1018 cm-3.

  15. One-dimensional super Calabi-Yau manifolds and their mirrors

    Energy Technology Data Exchange (ETDEWEB)

    Noja, S. [Dipartimento di Matematica, Università degli Studi di Milano,Via Saldini 50, I-20133 Milano (Italy); Cacciatori, S.L. [Dipartimento di Scienza e Alta Tecnologia, Università dell’Insubria, Via Valleggio 11, I-22100 Como (Italy); INFN, Sezione di Milano,Via Celoria 16, I-20133 Milano (Italy); Piazza, F. Dalla [Dipartimento di Scienza e Alta Tecnologia, Università dell’Insubria, Via Valleggio 11, I-22100 Como (Italy); Marrani, A. [Centro Studi e Ricerche ‘Enrico Fermi’,Via Panisperna 89A, I-00184 Roma (Italy); Dipartimento di Fisica e Astronomia ‘Galileo Galilei’, Università di Padova,and INFN, Sezione di Padova,Via Marzolo 8, I-35131 Padova (Italy); Re, R. [Dipartimento di Matematica e Informatica, Università degli Studi di Catania,Viale Andrea Doria 6, 95125 Catania (Italy)

    2017-04-18

    We apply a definition of generalised super Calabi-Yau variety (SCY) to supermanifolds of complex dimension one. One of our results is that there are two SCY’s having reduced manifold equal to ℙ{sup 1}, namely the projective super space ℙ{sup 1|2} and the weighted projective super space Wℙ{sub (2)}{sup 1|1}. Then we compute the corresponding sheaf cohomology of superforms, showing that the cohomology with picture number one is infinite dimensional, while the de Rham cohomology, which is what matters from a physical point of view, remains finite dimensional. Moreover, we provide the complete real and holomorphic de Rham cohomology for generic projective super spaces ℙ{sup n|m}. We also determine the automorphism groups: these always match the dimension of the projective super group with the only exception of ℙ{sup 1|2}, whose automorphism group turns out to be larger than the projective super group. By considering the cohomology of the super tangent sheaf, we compute the deformations of ℙ{sup 1|m}, discovering that the presence of a fermionic structure allows for deformations even if the reduced manifold is rigid. Finally, we show that ℙ{sup 1|2} is self-mirror, whereas Wℙ{sub (2)}{sup 1|1} has a zero dimensional mirror. Also, the mirror map for ℙ{sup 1|2} naturally endows it with a structure of N=2 super Riemann surface.

  16. 75 FR 77670 - SuperMedia, LLC, Formerly Known as Idearc Media, LLC, a Subsidiary of SuperMedia Information...

    Science.gov (United States)

    2010-12-13

    ... Known as Idearc Media, LLC, a Subsidiary of SuperMedia Information Services, LLC Publishing Group, Troy... Subsidiary of SuperMedia Information Services, LLC, Troy, New York, to apply for Trade Adjustment Assistance..., Publishing Group, Troy, New York, who became totally or partially separated from employment on or after...

  17. Supramolecular Systems and Chemical Reactions in Single-Molecule Break Junctions.

    Science.gov (United States)

    Li, Xiaohui; Hu, Duan; Tan, Zhibing; Bai, Jie; Xiao, Zongyuan; Yang, Yang; Shi, Jia; Hong, Wenjing

    2017-04-01

    The major challenges of molecular electronics are the understanding and manipulation of the electron transport through the single-molecule junction. With the single-molecule break junction techniques, including scanning tunneling microscope break junction technique and mechanically controllable break junction technique, the charge transport through various single-molecule and supramolecular junctions has been studied during the dynamic fabrication and continuous characterization of molecular junctions. This review starts from the charge transport characterization of supramolecular junctions through a variety of noncovalent interactions, such as hydrogen bond, π-π interaction, and electrostatic force. We further review the recent progress in constructing highly conductive molecular junctions via chemical reactions, the response of molecular junctions to external stimuli, as well as the application of break junction techniques in controlling and monitoring chemical reactions in situ. We suggest that beyond the measurement of single molecular conductance, the single-molecule break junction techniques provide a promising access to study molecular assembly and chemical reactions at the single-molecule scale.

  18. Medium-Bandgap Small-Molecule Donors Compatible with Both Fullerene and Nonfullerene Acceptors.

    Science.gov (United States)

    Huo, Yong; Yan, Cenqi; Kan, Bin; Liu, Xiao-Fei; Chen, Li-Chuan; Hu, Chen-Xia; Lau, Tsz-Ki; Lu, Xinhui; Sun, Chun-Lin; Shao, Xiangfeng; Chen, Yongsheng; Zhan, Xiaowei; Zhang, Hao-Li

    2018-03-21

    Much effort has been devoted to the development of new donor materials for small-molecule organic solar cells due to their inherent advantages of well-defined molecular weight, easy purification, and good reproducibility in photovoltaic performance. Herein, we report two small-molecule donors that are compatible with both fullerene and nonfullerene acceptors. Both molecules consist of an (E)-1,2-di(thiophen-2-yl)ethane-substituted (TVT-substituted) benzo[1,2-b:4,5-b']dithiophene (BDT) as the central unit, and two rhodanine units as the terminal electron-withdrawing groups. The central units are modified with either alkyl side chains (DRBDT-TVT) or alkylthio side chains (DRBDT-STVT). Both molecules exhibit a medium bandgap with complementary absorption and proper energy level offset with typical acceptors like PC 71 BM and IDIC. The optimized devices show a decent power conversion efficiency (PCE) of 6.87% for small-molecule organic solar cells and 6.63% for nonfullerene all small-molecule organic solar cells. Our results reveal that rationally designed medium-bandgap small-molecule donors can be applied in high-performance small-molecule organic solar cells with different types of acceptors.

  19. Freedom from band-gap slavery: from diode lasers to quantum cascade lasers

    Science.gov (United States)

    Capasso, Federico

    2010-02-01

    Semiconductor heterostructure lasers, for which Alferov and Kromer received part of the Nobel Prize in Physics in 2000, are the workhorse of technologies such as optical communications, optical recording, supermarket scanners, laser printers and fax machines. They exhibit high performance in the visible and near infrared and rely for their operation on electrons and holes emitting photons across the semiconductor bandgap. This mechanism turns into a curse at longer wavelengths (mid-infrared) because as the bandgap, shrinks laser operation becomes much more sensitive to temperature, material defects and processing. Quantum Cascade Laser (QCL), invented in 1994, rely on a radically different process for light emission. QCLs are unipolar devices in which electrons undergo transitions between quantum well energy levels and are recycled through many stages emitting a cascade of photons. Thus by suitable tailoring of the layers' thickness, using the same heterostructure material, they can lase across the molecular fingerprint region from 3 to 25 microns and beyond into the far-infrared and submillimiter wave spectrum. High power cw room temperature QCLs and QCLs with large continuous single mode tuning range have found many applications (infrared countermeasures, spectroscopy, trace gas analysis and atmospheric chemistry) and are commercially available. )

  20. Quantisation of super Teichmueller theory

    International Nuclear Information System (INIS)

    Aghaei, Nezhla; Hamburg Univ.; Pawelkiewicz, Michal; Techner, Joerg

    2015-12-01

    We construct a quantisation of the Teichmueller spaces of super Riemann surfaces using coordinates associated to ideal triangulations of super Riemann surfaces. A new feature is the non-trivial dependence on the choice of a spin structure which can be encoded combinatorially in a certain refinement of the ideal triangulation. By constructing a projective unitary representation of the groupoid of changes of refined ideal triangulations we demonstrate that the dependence of the resulting quantum theory on the choice of a triangulation is inessential.

  1. Towards ferromagnet/superconductor junctions on graphene

    International Nuclear Information System (INIS)

    Pakkayil, Shijin Babu

    2015-01-01

    to contact graphene or any other semiconductor with a ferromagnet has to overcome one important problem known as ''Conductance mismatch''. To solve the conductance mismatch problem, which had stalled the injection of spin polarised electrons to a semiconductor for many years, in our fabrication method, a thin Al 2 O 3 layer is introduced between the ferromagnet and graphene. The insulating layer is grown using Atomic layer deposition (ALD) with the help of a thin Ti seed layer. Unlike the previously reported method, which treats the entire graphene flake with PTCA (3,4,9,10-perylene tetracarboxylic acid) prior to the ALD process, no such chemical treatment occurs in our fabrication process. Also, the yield of successful devices are higher than the highest yield reported so far (∝30%). The later part of the thesis discusses how this fabrication recipe is further developed to contact graphene with superconducting contacts to produce ferromagnet/superconductor junctions on graphene. The successful spin valve devices produced using the new fabrication process are discussed along with a simple theory of spin transport in graphene. Some of the spin valve devices discussed are fabricated with the help of Ti seed layer (for growing Al 2 O 3 ) and some of them are without. Also, measurement results on devices with varying number of ALD cycles are shown and discussed which helps to decide the optimum number of ALD cycles needed for the best yield and performance. The devices made using Ti seed layer shows better consistency in terms of contact resistances and device performance. Also, ferromagnetic contacts from one device showed perfect tunnel barrier behaviour. Chapter 5 mainly discusses the results of the measurements done on a device which has 4 ferromagnetic contacts and 4 superconducting contacts arranged in a fashion that it forms multiple ferromagnet/superconductor junctions on graphene. Lateral spin valves and Josephson junctions are also part of

  2. Towards ferromagnet/superconductor junctions on graphene

    Energy Technology Data Exchange (ETDEWEB)

    Pakkayil, Shijin Babu

    2015-07-01

    to contact graphene or any other semiconductor with a ferromagnet has to overcome one important problem known as ''Conductance mismatch''. To solve the conductance mismatch problem, which had stalled the injection of spin polarised electrons to a semiconductor for many years, in our fabrication method, a thin Al{sub 2}O{sub 3} layer is introduced between the ferromagnet and graphene. The insulating layer is grown using Atomic layer deposition (ALD) with the help of a thin Ti seed layer. Unlike the previously reported method, which treats the entire graphene flake with PTCA (3,4,9,10-perylene tetracarboxylic acid) prior to the ALD process, no such chemical treatment occurs in our fabrication process. Also, the yield of successful devices are higher than the highest yield reported so far (∝30%). The later part of the thesis discusses how this fabrication recipe is further developed to contact graphene with superconducting contacts to produce ferromagnet/superconductor junctions on graphene. The successful spin valve devices produced using the new fabrication process are discussed along with a simple theory of spin transport in graphene. Some of the spin valve devices discussed are fabricated with the help of Ti seed layer (for growing Al{sub 2}O{sub 3}) and some of them are without. Also, measurement results on devices with varying number of ALD cycles are shown and discussed which helps to decide the optimum number of ALD cycles needed for the best yield and performance. The devices made using Ti seed layer shows better consistency in terms of contact resistances and device performance. Also, ferromagnetic contacts from one device showed perfect tunnel barrier behaviour. Chapter 5 mainly discusses the results of the measurements done on a device which has 4 ferromagnetic contacts and 4 superconducting contacts arranged in a fashion that it forms multiple ferromagnet/superconductor junctions on graphene. Lateral spin valves and Josephson junctions

  3. Complex layered materials and periodic electromagnetic band-gap structures: Concepts, characterizations, and applications

    Science.gov (United States)

    Mosallaei, Hossein

    The main objective of this dissertation is to characterize and create insight into the electromagnetic performances of two classes of composite structures, namely, complex multi-layered media and periodic Electromagnetic Band-Gap (EBG) structures. The advanced and diversified computational techniques are applied to obtain their unique propagation characteristics and integrate the results into some novel applications. In the first part of this dissertation, the vector wave solution of Maxwell's equations is integrated with the Genetic Algorithm (GA) optimization method to provide a powerful technique for characterizing multi-layered materials, and obtaining their optimal designs. The developed method is successfully applied to determine the optimal composite coatings for Radar Cross Section (RCS) reduction of canonical structures. Both monostatic and bistatic scatterings are explored. A GA with hybrid planar/curved surface implementation is also introduced to efficiently obtain the optimal absorbing materials for curved structures. Furthermore, design optimization of the non-uniform Luneburg and 2-shell spherical lens antennas utilizing modal solution/GA-adaptive-cost function is presented. The lens antennas are effectively optimized for both high gain and suppressed grating lobes. The second part demonstrates the development of an advanced computational engine, which accurately computes the broadband characteristics of challenging periodic electromagnetic band-gap structures. This method utilizes the Finite Difference Time Domain (FDTD) technique with Periodic Boundary Condition/Perfectly Matched Layer (PBC/PML), which is efficiently integrated with the Prony scheme. The computational technique is successfully applied to characterize and present the unique propagation performances of different classes of periodic structures such as Frequency Selective Surfaces (FSS), Photonic Band-Gap (PBG) materials, and Left-Handed (LH) composite media. The results are

  4. A High-Efficiency Compact SiC-based Power Converter System, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — Wide bandgap SiC power devices have the potential for reliable operations at higher junction temperatures, higher voltages, higher frequencies and thus higher power...

  5. Josephson junctions of multiple superconducting wires

    Science.gov (United States)

    Deb, Oindrila; Sengupta, K.; Sen, Diptiman

    2018-05-01

    We study the spectrum of Andreev bound states and Josephson currents across a junction of N superconducting wires which may have s - or p -wave pairing symmetries and develop a scattering matrix based formalism which allows us to address transport across such junctions. For N ≥3 , it is well known that Berry curvature terms contribute to the Josephson currents; we chart out situations where such terms can have relatively large effects. For a system of three s -wave or three p -wave superconductors, we provide analytic expressions for the Andreev bound-state energies and study the Josephson currents in response to a constant voltage applied across one of the wires; we find that the integrated transconductance at zero temperature is quantized to integer multiples of 4 e2/h , where e is the electron charge and h =2 π ℏ is Planck's constant. For a sinusoidal current with frequency ω applied across one of the wires in the junction, we find that Shapiro plateaus appear in the time-averaged voltage across that wire for any rational fractional multiple (in contrast to only integer multiples in junctions of two wires) of 2 e /(ℏ ω ) . We also use our formalism to study junctions of two p -wave and one s -wave wires. We find that the corresponding Andreev bound-state energies depend on the spin of the Bogoliubov quasiparticles; this produces a net magnetic moment in such junctions. The time variation of these magnetic moments may be controlled by an external voltage applied across the junction. We discuss experiments which may test our theory.

  6. Electrical and Optical Measurements of the Bandgap Energy of a Light-Emitting Diode

    Science.gov (United States)

    Petit, Matthieu; Michez, Lisa; Raimundo, Jean-Manuel; Dumas, Philippe

    2016-01-01

    Semiconductor materials are at the core of electronics. Most electronic devices are made of semiconductors. The operation of these components is well described by quantum physics which is often a difficult concept for students to understand. One of the intrinsic parameters of semiconductors is their bandgap energy E[subscript g]. In the case of…

  7. Molecular Diffusion through Cyanobacterial Septal Junctions.

    Science.gov (United States)

    Nieves-Morión, Mercedes; Mullineaux, Conrad W; Flores, Enrique

    2017-01-03

    Heterocyst-forming cyanobacteria grow as filaments in which intercellular molecular exchange takes place. During the differentiation of N 2 -fixing heterocysts, regulators are transferred between cells. In the diazotrophic filament, vegetative cells that fix CO 2 through oxygenic photosynthesis provide the heterocysts with reduced carbon and heterocysts provide the vegetative cells with fixed nitrogen. Intercellular molecular transfer has been traced with fluorescent markers, including calcein, 5-carboxyfluorescein, and the sucrose analogue esculin, which are observed to move down their concentration gradient. In this work, we used fluorescence recovery after photobleaching (FRAP) assays in the model heterocyst-forming cyanobacterium Anabaena sp. strain PCC 7120 to measure the temperature dependence of intercellular transfer of fluorescent markers. We find that the transfer rate constants are directly proportional to the absolute temperature. This indicates that the "septal junctions" (formerly known as "microplasmodesmata") linking the cells in the filament allow molecular exchange by simple diffusion, without any activated intermediate state. This constitutes a novel mechanism for molecular transfer across the bacterial cytoplasmic membrane, in addition to previously characterized mechanisms for active transport and facilitated diffusion. Cyanobacterial septal junctions are functionally analogous to the gap junctions of metazoans. Although bacteria are frequently considered just as unicellular organisms, there are bacteria that behave as true multicellular organisms. The heterocyst-forming cyanobacteria grow as filaments in which cells communicate. Intercellular molecular exchange is thought to be mediated by septal junctions. Here, we show that intercellular transfer of fluorescent markers in the cyanobacterial filament has the physical properties of simple diffusion. Thus, cyanobacterial septal junctions are functionally analogous to metazoan gap junctions

  8. Super-entropic black holes and the Kerr-CFT correspondence

    Energy Technology Data Exchange (ETDEWEB)

    Sinamuli, Musema [Department of Physics and Astronomy, University of Waterloo,200 University Ave., Waterloo, Ontario N2L 3G1 (Canada); Perimeter Institute for Theoretical Physics,31 Caroline St., Waterloo, Ontario, N2L 2Y5 (Canada); Mann, Robert B. [Department of Physics and Astronomy, University of Waterloo,200 University Ave., Waterloo, Ontario N2L 3G1 (Canada)

    2016-08-24

    We demonstrate that Kerr-CFT duality can be extended to super-entropic black holes, which have non-compact horizons with finite area. We demonstrate that this duality is robust insofar as the ultra-spinning limit of a Kerr-AdS black hole (which yields the super-entropic class) commutes with the near-horizon limit (which yields the Kerr-CFT duality). Consequently the Bekenstein-Hawking and the CFT entropies are equivalent. We show that the duality holds for both singly-spinning super-entropic black holes in 4 dimensions and for doubly-spinning super-entropic black holes of gauged supergravity in 5 dimensions. In both cases we obtain not only the expected left/right temperatures, but also temperatures associated with electric charge and with a new thermodynamic parameter specific to super-entropic black holes.

  9. Super-entropic black holes and the Kerr-CFT correspondence

    International Nuclear Information System (INIS)

    Sinamuli, Musema; Mann, Robert B.

    2016-01-01

    We demonstrate that Kerr-CFT duality can be extended to super-entropic black holes, which have non-compact horizons with finite area. We demonstrate that this duality is robust insofar as the ultra-spinning limit of a Kerr-AdS black hole (which yields the super-entropic class) commutes with the near-horizon limit (which yields the Kerr-CFT duality). Consequently the Bekenstein-Hawking and the CFT entropies are equivalent. We show that the duality holds for both singly-spinning super-entropic black holes in 4 dimensions and for doubly-spinning super-entropic black holes of gauged supergravity in 5 dimensions. In both cases we obtain not only the expected left/right temperatures, but also temperatures associated with electric charge and with a new thermodynamic parameter specific to super-entropic black holes.

  10. Wide and ultra-wide bandgap oxides: where paradigm-shift photovoltaics meets transparent power electronics

    Science.gov (United States)

    Pérez-Tomás, Amador; Chikoidze, Ekaterine; Jennings, Michael R.; Russell, Stephen A. O.; Teherani, Ferechteh H.; Bove, Philippe; Sandana, Eric V.; Rogers, David J.

    2018-03-01

    Oxides represent the largest family of wide bandgap (WBG) semiconductors and also offer a huge potential range of complementary magnetic and electronic properties, such as ferromagnetism, ferroelectricity, antiferroelectricity and high-temperature superconductivity. Here, we review our integration of WBG and ultra WBG semiconductor oxides into different solar cells architectures where they have the role of transparent conductive electrodes and/or barriers bringing unique functionalities into the structure such above bandgap voltages or switchable interfaces. We also give an overview of the state-of-the-art and perspectives for the emerging semiconductor β- Ga2O3, which is widely forecast to herald the next generation of power electronic converters because of the combination of an UWBG with the capacity to conduct electricity. This opens unprecedented possibilities for the monolithic integration in solar cells of both self-powered logic and power electronics functionalities. Therefore, WBG and UWBG oxides have enormous promise to become key enabling technologies for the zero emissions smart integration of the internet of things.

  11. Structural correlations in the generation of polaron pairs in low-bandgap polymers for photovoltaics

    Science.gov (United States)

    Tautz, Raphael; da Como, Enrico; Limmer, Thomas; Feldmann, Jochen; Egelhaaf, Hans-Joachim; von Hauff, Elizabeth; Lemaur, Vincent; Beljonne, David; Yilmaz, Seyfullah; Dumsch, Ines; Allard, Sybille; Scherf, Ullrich

    2012-07-01

    Polymeric semiconductors are materials where unique optical and electronic properties often originate from a tailored chemical structure. This allows for synthesizing conjugated macromolecules with ad hoc functionalities for organic electronics. In photovoltaics, donor-acceptor co-polymers, with moieties of different electron affinity alternating on the chain, have attracted considerable interest. The low bandgap offers optimal light-harvesting characteristics and has inspired work towards record power conversion efficiencies. Here we show for the first time how the chemical structure of donor and acceptor moieties controls the photogeneration of polaron pairs. We show that co-polymers with strong acceptors show large yields of polaron pair formation up to 24% of the initial photoexcitations as compared with a homopolymer (η=8%). π-conjugated spacers, separating the donor and acceptor centre of masses, have the beneficial role of increasing the recombination time. The results provide useful input into the understanding of polaron pair photogeneration in low-bandgap co-polymers for photovoltaics.

  12. Josephson tunnel junctions in niobium films

    International Nuclear Information System (INIS)

    Wiik, Tapio.

    1976-12-01

    A method of fabricating stable Josephson tunnel junctions with reproducible characteristics is described. The junctions have a sandwich structure consisting of a vacuum evaporated niobium film, a niobium oxide layer produced by the glow discharge method and a lead film deposited by vacuum evaporation. Difficulties in producing thin-film Josephson junctions are discussed. Experimental results suggest that the lower critical field of the niobium film is the most essential parameter when evaluating the quality of these junctions. The dependence of the lower critical field on the film thickness and on the Ginzburg-Landau parameter of the film is studied analytically. Comparison with the properties of the evaporated films and with the previous calculations for bulk specimens shows that the presented model is applicable for most of the prepared samples. (author)

  13. Josephson junctions with ferromagnetic alloy interlayer

    Energy Technology Data Exchange (ETDEWEB)

    Himmel, Nico

    2015-07-23

    Josephson junctions are used as active devices in superconducting electronics and quantum information technology. Outstanding properties are their distinct non-linear electrical characteristics and a usually sinusoidal relation between the current and the superconducting phase difference across the junction. In general the insertion of ferromagnetic material in the barrier of a Josephson junction is associated with a suppression of superconducting correlations. But also new phenomena can arise which may allow new circuit layouts and enhance the performance of applications. This thesis presents a systematic investigation for two concepts to fabricate Josephson junctions with a rather uncommon negative critical current. Such devices exhibit an intrinsic phase slip of π between the electrodes, so they are also known as π junctions. Both studies go well beyond existing experiments and in one system a π junction is shown for the first time. All the thin film junctions are based on superconducting Nb electrodes. In a first approach, barriers made from Si and Fe were investigated with respect to the realisation of π junctions by spin-flip processes. The distribution of Fe in the Si matrix was varied from pure layers to disperse compounds. The systematic fabrication of alloy barriers was facilitated by the development of a novel timing-based combinatorial sputtering technique for planetary deposition systems. An orthogonal gradient approach allowed to create binary layer libraries with independent variations of thickness and composition. Second, Nb vertical stroke AlO{sub x} vertical stroke Nb vertical stroke Ni{sub 60}Cu{sub 40} vertical stroke Nb (SIsFS) double barrier junctions were experimentally studied for the occurrence of proximity effect induced order parameter oscillations. Detailed dependencies of the critical current density on the thickness of s-layer and F-layer were acquired and show a remarkable agreement to existing theoretical predictions. Especially

  14. Josephson junctions with ferromagnetic alloy interlayer

    International Nuclear Information System (INIS)

    Himmel, Nico

    2015-01-01

    Josephson junctions are used as active devices in superconducting electronics and quantum information technology. Outstanding properties are their distinct non-linear electrical characteristics and a usually sinusoidal relation between the current and the superconducting phase difference across the junction. In general the insertion of ferromagnetic material in the barrier of a Josephson junction is associated with a suppression of superconducting correlations. But also new phenomena can arise which may allow new circuit layouts and enhance the performance of applications. This thesis presents a systematic investigation for two concepts to fabricate Josephson junctions with a rather uncommon negative critical current. Such devices exhibit an intrinsic phase slip of π between the electrodes, so they are also known as π junctions. Both studies go well beyond existing experiments and in one system a π junction is shown for the first time. All the thin film junctions are based on superconducting Nb electrodes. In a first approach, barriers made from Si and Fe were investigated with respect to the realisation of π junctions by spin-flip processes. The distribution of Fe in the Si matrix was varied from pure layers to disperse compounds. The systematic fabrication of alloy barriers was facilitated by the development of a novel timing-based combinatorial sputtering technique for planetary deposition systems. An orthogonal gradient approach allowed to create binary layer libraries with independent variations of thickness and composition. Second, Nb vertical stroke AlO x vertical stroke Nb vertical stroke Ni 60 Cu 40 vertical stroke Nb (SIsFS) double barrier junctions were experimentally studied for the occurrence of proximity effect induced order parameter oscillations. Detailed dependencies of the critical current density on the thickness of s-layer and F-layer were acquired and show a remarkable agreement to existing theoretical predictions. Especially a variation of

  15. Molecular series-tunneling junctions.

    Science.gov (United States)

    Liao, Kung-Ching; Hsu, Liang-Yan; Bowers, Carleen M; Rabitz, Herschel; Whitesides, George M

    2015-05-13

    Charge transport through junctions consisting of insulating molecular units is a quantum phenomenon that cannot be described adequately by classical circuit laws. This paper explores tunneling current densities in self-assembled monolayer (SAM)-based junctions with the structure Ag(TS)/O2C-R1-R2-H//Ga2O3/EGaIn, where Ag(TS) is template-stripped silver and EGaIn is the eutectic alloy of gallium and indium; R1 and R2 refer to two classes of insulating molecular units-(CH2)n and (C6H4)m-that are connected in series and have different tunneling decay constants in the Simmons equation. These junctions can be analyzed as a form of series-tunneling junctions based on the observation that permuting the order of R1 and R2 in the junction does not alter the overall rate of charge transport. By using the Ag/O2C interface, this system decouples the highest occupied molecular orbital (HOMO, which is localized on the carboxylate group) from strong interactions with the R1 and R2 units. The differences in rates of tunneling are thus determined by the electronic structure of the groups R1 and R2; these differences are not influenced by the order of R1 and R2 in the SAM. In an electrical potential model that rationalizes this observation, R1 and R2 contribute independently to the height of the barrier. This model explicitly assumes that contributions to rates of tunneling from the Ag(TS)/O2C and H//Ga2O3 interfaces are constant across the series examined. The current density of these series-tunneling junctions can be described by J(V) = J0(V) exp(-β1d1 - β2d2), where J(V) is the current density (A/cm(2)) at applied voltage V and βi and di are the parameters describing the attenuation of the tunneling current through a rectangular tunneling barrier, with width d and a height related to the attenuation factor β.

  16. Introduction of a super speed network in JNC

    International Nuclear Information System (INIS)

    Nosaki, Nobuhisa; Aoki, Kazuhisa; Narita, Nobuiku

    2002-01-01

    The construction of a super speed and broadband network with high cost performance is now possible through the resent remarkable development of information-communication technologies. Under such circumstances, the modification of LAN and WAN to the super speed network was required in accordance with the recent network demand in JNC. The trend of the information-communication technologies and the needs of information-communication infrastructure were reviewed as the first step. A modification of WAN to the super speed network with high cost performance was established in fiscal year 2000. This paper introduces the work procedures and the modification of the WAN in order to acquire a reduction in the running cost and the super speed network in the fiscal year. (author)

  17. Sub-bandgap optical absorption spectroscopy of hydrogenated microcrystalline silicon thin films prepared using hot-wire CVD (Cat-CVD) process

    International Nuclear Information System (INIS)

    Goktas, O.; Isik, N.; Okur, S.; Gunes, M.; Carius, R.; Klomfass, J.; Finger, F.

    2006-01-01

    Hydrogenated microcrystalline silicon (μc-Si:H) thin films with different silane concentration (SC) have been prepared using the HW-CVD technique. Dual beam photoconductivity (DBP), photothermal deflection spectroscopy (PDS), and transmission measurements have been used to investigate the optical properties of the μc-Si:H films. Two different sub-bandgap absorption, α(hν), methods have been applied and analyzed to obtain a better insight into the electronic states involved. A good agreement has been obtained in the absorption spectrum obtained from the PDS and DBP measurements at energies above the bandgap. Differences between PDS and DBP spectra exist below the bandgap energy where DBP spectra always give lower α(hν) values and show a dependence on the SC. For some films, differences exist in the α(hν) spectra when the DBP measurements are carried out through the film and substrate side. In addition, for some films, there remains fringe pattern left on the spectrum after the calculation of the fringe-free absorption spectrum, which indicates structural inhomogeneities present throughout the film

  18. Performance of single-junction and dual-junction InGaP/GaAs solar cells under low concentration ratios

    International Nuclear Information System (INIS)

    Khan, Aurangzeb; Yamaguchi, Masafumi; Takamoto, Tatsuya

    2004-01-01

    A study of the performance of single-junction InGaP/GaAs and dual-junction InGaP/GaAs tandem cells under low concentration ratios (up to 15 suns), before and after 1 MeV electron irradiation is presented. Analysis of the tunnel junction parameters under different concentrated light illuminations reveals that the peak current (J P ) and valley current (J V ) densities should be greater than the short-circuit current density (J sc ) for better performance. The tunnel junction behavior against light intensity improved after irradiation. This led to the suggestion that the peak current density (J P ) and valley current density (J V ) of the tunnel junction were enhanced after irradiation or the peak current was shifted to higher concentration. The recovery of the radiation damage under concentrated light illumination conditions suggests that the performance of the InGaP/GaAs tandem solar cell can be enhanced even under low concentration ratios

  19. Current noise in tunnel junctions

    Energy Technology Data Exchange (ETDEWEB)

    Frey, Moritz; Grabert, Hermann [Physikalisches Institut, Universitaet Freiburg, Hermann-Herder-Strasse 3, 79104, Freiburg (Germany)

    2017-06-15

    We study current fluctuations in tunnel junctions driven by a voltage source. The voltage is applied to the tunneling element via an impedance providing an electromagnetic environment of the junction. We use circuit theory to relate the fluctuations of the current flowing in the leads of the junction with the voltage fluctuations generated by the environmental impedance and the fluctuations of the tunneling current. The spectrum of current fluctuations is found to consist of three parts: a term arising from the environmental Johnson-Nyquist noise, a term due to the shot noise of the tunneling current and a third term describing the cross-correlation between these two noise sources. Our phenomenological theory reproduces previous results based on the Hamiltonian model for the dynamical Coulomb blockade and provides a simple understanding of the current fluctuation spectrum in terms of circuit theory and properties of the average current. Specific results are given for a tunnel junction driven through a resonator. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  20. Super-Laplacians and their symmetries

    Energy Technology Data Exchange (ETDEWEB)

    Howe, P.S. [Department of Mathematics, King’s College London,The Strand, London, WC2R 2LS (United Kingdom); Lindström, University [Department of Physics and Astronomy, Theoretical Physics, Uppsala University,Uppsala, SE-751 20 (Sweden); Theoretical Physics, Imperial College London,Prince Consort Road, London, SW7 2AZ (United Kingdom)

    2017-05-22

    A super-Laplacian is a set of differential operators in superspace whose highest-dimensional component is given by the spacetime Laplacian. Symmetries of super-Laplacians are given by linear differential operators of arbitrary finite degree and are determined by superconformal Killing tensors. We investigate these in flat superspaces. The differential operators determining the symmetries give rise to algebras which can be identified in many cases with the tensor algebras of the relevant superconformal Lie algebras modulo certain ideals. They have applications to Higher Spin theories.

  1. Super-preshowers (DPG-Fruehjahrstagung 2016)

    Energy Technology Data Exchange (ETDEWEB)

    Kaeaepae, Alex [Bergische Universitaet Wuppertal, Gaussstr. 20, 42119 Wuppertal (Germany); Collaboration: Pierre-Auger-Collaboration

    2016-07-01

    Based on the current data from the Pierre Auger Observatory, no evidence of cosmic ray photon primaries has been found. However, photon primaries could induce so-called ''super-preshowers'', which have not been considered sofar, but are a promising candidate for explaining the ''composition puzzle'' at ultra-high energies. In this presentation, possible super-preshower processes are examined, and their effects on important Auger parameters, such as the energy deposit and muon production, are studied via simulations.

  2. Super-Laplacians and their symmetries

    International Nuclear Information System (INIS)

    Howe, P.S.; Lindström, University

    2017-01-01

    A super-Laplacian is a set of differential operators in superspace whose highest-dimensional component is given by the spacetime Laplacian. Symmetries of super-Laplacians are given by linear differential operators of arbitrary finite degree and are determined by superconformal Killing tensors. We investigate these in flat superspaces. The differential operators determining the symmetries give rise to algebras which can be identified in many cases with the tensor algebras of the relevant superconformal Lie algebras modulo certain ideals. They have applications to Higher Spin theories.

  3. Migration-driven diversity of super-Earth compositions

    Science.gov (United States)

    Raymond, Sean N.; Boulet, Thibault; Izidoro, Andre; Esteves, Leandro; Bitsch, Bertram

    2018-06-01

    A leading model for the origin of super-Earths proposes that planetary embryos migrate inward and pile up on close-in orbits. As large embryos are thought to preferentially form beyond the snow line, this naively predicts that most super-Earths should be very water-rich. Here we show that the shortest-period planets formed in the migration model are often purely rocky. The inward migration of icy embryos through the terrestrial zone accelerates the growth of rocky planets via resonant shepherding. We illustrate this process with a simulation that provided a match to the Kepler-36 system of two planets on close orbits with very different densities. In the simulation, two super-Earths formed in a Kepler-36-like configuration; the inner planet was pure rock while the outer one was ice-rich. We conclude from a suite of simulations that the feeding zones of close-in super-Earths are likely to be broad and disconnected from their final orbital radii.

  4. Tunable Bandgap Opening in the Proposed Structure of Silicon Doped Graphene

    OpenAIRE

    Azadeh, Mohammad S. Sharif; Kokabi, Alireza; Hosseini, Mehdi; Fardmanesh, Mehdi

    2011-01-01

    A specific structure of doped graphene with substituted silicon impurity is introduced and ab. initio density-functional approach is applied for energy band structure calculation of proposed structure. Using the band structure calculation for different silicon sites in the host graphene, the effect of silicon concentration and unit cell geometry on the bandgap of the proposed structure is also investigated. Chemically silicon doped graphene results in an energy gap as large as 2eV according t...

  5. Growth of Cu(In,Al)(Se,S)2 thin films by selenization and sulfurization for a wide bandgap absorber

    International Nuclear Information System (INIS)

    Fujiwara, C.; Kawasaki, Y.; Sato, T.; Sugiyama, M.; Chichibu, S.F.

    2010-01-01

    Full text : Chalcopyrite structure Cu(In 1 .xAlx)(S y Se 1 -y) 2 (CIASS) alloys are attracting attention as promising candidates for the light-absorbing medium of high conversion efficiency, low cost, and lightweight solar cells. In addition, according to the wide variation in the bandgap energy (1.0-3.5eV), multiple-junction or tandem solar cells able to be fabricated using CIASS films of different compositions, x and y. In fact, several research groups have recently fabricated Cu(In,Al)Se 2 -based solar cells, and a high μ of 16.9 percent has been demonstrated. The sulfurization following selenization of Cu(In,Ga)Se2 (CIGS) films is believed to be promising for bandgap engineering of absorber material. Furthermore, it has been reported that the controlled incorporation of sulfur into CIGS films reduces the carrier recombination in the space charge region due to the deep trap states. Therefore, the sulfurization following selenization is expected to be used as a method of growth of CIASS films. However, sulfurization condition following selenization for obtaining CIASS films has not been clarified. The crystal growth of CIASS must be studied for solar cell applications. In this study, the advantages of using sulfurization for the growth of CIASS will be presented. Cu-In-Al precursors were selenized using diethylselenide (DESe) at 515-570 degrees Celsium for 60- 90 min under atmospheric pressure. The flow rates of DESe and N 2 carrier gases were 35 imol/min and 2 L/min, respectively. The films were then sulfurized at 550 degrees Celsium using S vapor. These films were characterized by SEM, EDX, XRD, and PL measurements. Using the selenization and sulfurization technique, polycrystalline Cu(In,Al)Se 2 , CuIn(Se,S) 2 , CuInS 2 films with thickness of approximately 2.0 im were formed without additional annealing. The films adhered well to the Mo/SLG substrate, which was confirmed by the peeling test. Phase separations, i.e. distinct peaks corresponding to CuInSe 2

  6. Curved Josephson junction

    International Nuclear Information System (INIS)

    Dobrowolski, Tomasz

    2012-01-01

    The constant curvature one and quasi-one dimensional Josephson junction is considered. On the base of Maxwell equations, the sine–Gordon equation that describes an influence of curvature on the kink motion was obtained. It is showed that the method of geometrical reduction of the sine–Gordon model from three to lower dimensional manifold leads to an identical form of the sine–Gordon equation. - Highlights: ► The research on dynamics of the phase in a curved Josephson junction is performed. ► The geometrical reduction is applied to the sine–Gordon model. ► The results of geometrical reduction and the fundamental research are compared.

  7. A novel electro-thermal model for wide bandgap semiconductor based devices

    DEFF Research Database (Denmark)

    Sintamarean, Nicolae Christian; Blaabjerg, Frede; Wang, Huai

    2013-01-01

    This paper propose a novel Electro-Thermal Model for the new generation of power electronics WBG-devices (by considering the SiC MOSFET-CMF20120D from CREE), which is able to estimate the device junction and case temperature. The Device-Model estimates the voltage drop and the switching energies...... by considering the device current, the off-state blocking voltage and junction temperature variation. Moreover, the proposed Thermal-Model is able to consider the thermal coupling within the MOSFET and its freewheeling diode, integrated into the same package, and the influence of the ambient temperature...... variation. The importance of temperature loop feedback in the estimation accuracy of device junction and case temperature is studied. Furthermore, the Safe Operating Area (SOA) of the SiC MOSFET is determined for 2L-VSI applications which are using sinusoidal PWM. Thus, by considering the heatsink thermal...

  8. Microstructured and Photonic Bandgap Fibers for Applications in the Resonant Bio- and Chemical Sensors

    Directory of Open Access Journals (Sweden)

    Maksim Skorobogatiy

    2009-01-01

    Full Text Available We review application of microstructured and photonic bandgap fibers for designing resonant optical sensors of changes in the value of analyte refractive index. This research subject has recently invoked much attention due to development of novel fiber types, as well as due to development of techniques for the activation of fiber microstructure with functional materials. Particularly, we consider two sensors types. The first sensor type employs hollow core photonic bandgap fibers where core guided mode is confined in the analyte filled core through resonant effect in the surrounding periodic reflector. The second sensor type employs metalized microstructured or photonic bandgap waveguides and fibers, where core guided mode is phase matched with a plasmon propagating at the fiber/analyte interface. In resonant sensors one typically employs fibers with strongly nonuniform spectral transmission characteristics that are sensitive to changes in the real part of the analyte refractive index. Moreover, if narrow absorption lines are present in the analyte transmission spectrum, due to Kramers-Kronig relation this will also result in strong variation in the real part of the refractive index in the vicinity of an absorption line. Therefore, resonant sensors allow detection of minute changes both in the real part of the analyte refractive index (10−6–10−4 RIU, as well as in the imaginary part of the analyte refractive index in the vicinity of absorption lines. In the following we detail various resonant sensor implementations, modes of operation, as well as analysis of sensitivities for some of the common transduction mechanisms for bio- and chemical sensing applications. Sensor designs considered in this review span spectral operation regions from the visible to terahertz.

  9. Pinching parameters for open (super) strings

    Science.gov (United States)

    Playle, Sam; Sciuto, Stefano

    2018-02-01

    We present an approach to the parametrization of (super) Schottky space obtained by sewing together three-punctured discs with strips. Different cubic ribbon graphs classify distinct sets of pinching parameters; we show how they are mapped onto each other. The parametrization is particularly well-suited to describing the region within (super) moduli space where open bosonic or Neveu-Schwarz string propagators become very long and thin, which dominates the IR behaviour of string theories. We show how worldsheet objects such as the Green's function converge to graph theoretic objects such as the Symanzik polynomials in the α ' → 0 limit, allowing us to see how string theory reproduces the sum over Feynman graphs. The (super) string measure takes on a simple and elegant form when expressed in terms of these parameters.

  10. Josephson tunnel junctions with ferromagnetic interlayer

    International Nuclear Information System (INIS)

    Weides, M.P.

    2006-01-01

    Superconductivity and ferromagnetism are well-known physical properties of solid states that have been widely studied and long thought about as antagonistic phenomena due to difference in spin ordering. It turns out that the combination of both superconductor and ferromagnet leads to a very rich and interesting physics. One particular example, the phase oscillations of the superconducting order parameter inside the ferromagnet, will play a major role for the devices discussed in this work. In this thesis, I present Josephson junctions with a thin Al 2 O 3 tunnel barrier and a ferromagnetic interlayer, i.e. superconductor-insulator-ferromagnet-superconductor (SIFS) stacks. The fabrication of junctions was optimized regarding the insulation of electrodes and the homogeneity of the current transport. The junctions were either in the 0 or π coupled ground state, depending on the thickness of the ferromagnetic layer and on temperature. The influence of ferromagnetic layer thickness on the transport properties and the coupling (0, π) of SIFS tunnel junctions was studied. Furthermore, using a stepped ferromagnetic layer with well-chosen thicknesses, I obtained the so-called 0-π Josephson junction. At a certain temperature this 0-π junction can be made perfectly symmetric. In this case the ground state corresponds to a vortex of supercurrent creating a magnetic flux which is a fraction of the magnetic flux quantum Φ 0 . Such structures allow to study the physics of fractional vortices and to build various electronic circuits based on them. The SIFS junctions presented here have an exponentially vanishing damping at T → 0. The SIFS technology developed within the framework of this work may be used to construct classical and quantum devices such as oscillators, memory cells and qubits. (orig.)

  11. Josephson tunnel junctions with ferromagnetic interlayer

    Energy Technology Data Exchange (ETDEWEB)

    Weides, M.P.

    2006-07-01

    Superconductivity and ferromagnetism are well-known physical properties of solid states that have been widely studied and long thought about as antagonistic phenomena due to difference in spin ordering. It turns out that the combination of both superconductor and ferromagnet leads to a very rich and interesting physics. One particular example, the phase oscillations of the superconducting order parameter inside the ferromagnet, will play a major role for the devices discussed in this work. In this thesis, I present Josephson junctions with a thin Al{sub 2}O{sub 3} tunnel barrier and a ferromagnetic interlayer, i.e. superconductor-insulator-ferromagnet-superconductor (SIFS) stacks. The fabrication of junctions was optimized regarding the insulation of electrodes and the homogeneity of the current transport. The junctions were either in the 0 or {pi} coupled ground state, depending on the thickness of the ferromagnetic layer and on temperature. The influence of ferromagnetic layer thickness on the transport properties and the coupling (0, {pi}) of SIFS tunnel junctions was studied. Furthermore, using a stepped ferromagnetic layer with well-chosen thicknesses, I obtained the so-called 0-{pi} Josephson junction. At a certain temperature this 0-{pi} junction can be made perfectly symmetric. In this case the ground state corresponds to a vortex of supercurrent creating a magnetic flux which is a fraction of the magnetic flux quantum {phi}{sub 0}. Such structures allow to study the physics of fractional vortices and to build various electronic circuits based on them. The SIFS junctions presented here have an exponentially vanishing damping at T {yields} 0. The SIFS technology developed within the framework of this work may be used to construct classical and quantum devices such as oscillators, memory cells and qubits. (orig.)

  12. Robot-assisted pyeloplasty for pelvi-ureteric junction obstruction of lower moiety in partial duplex system: A technical challenge

    Directory of Open Access Journals (Sweden)

    Girdhar S Bora

    2016-01-01

    Full Text Available Management of pelvi-ureteric junction obstruction (PUJO in a duplex system is technically challenging as dissection at the pelvis may jeopardize the vascularity of the normal moiety ureter. Anastomosing the pelvis to the one single ureter will have a risk of future development of stricture which then will risk both the moieties. Robotic assistance enables appropriate tissue dissection; minimal handling of normal ureter and precision in suturing, overcoming the potential challenges involved in the minimally invasive management of such complex cases. We report the feasibility and efficacy of robot-assisted laparoscopic pyeloplasty in such case.

  13. Mechanically Stacked Dual-Junction and Triple-Junction III-V/Si-IBC Cells with Efficiencies Exceeding 31.5% and 35.4%: Preprint

    Energy Technology Data Exchange (ETDEWEB)

    Schnabel, Manuel [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Tamboli, Adele C [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Warren, Emily L [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Schulte-Huxel, Henning [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Klein, Talysa [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Van Hest, Marinus F [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Geisz, John F [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Stradins, Paul [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Steiner, Myles A [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Rienaecker, Michael [Institute for Solar Energy Research Hamelin (ISFH); Merkle, Agnes [Institute for Solar Energy Research Hamelin (ISFH); Kajari-Schroeder, S. [Institute for Solar Energy Research Hamelin (ISFH); Niepelt, Raphael [Institute for Solar Energy Research Hamelin (ISFH); Schmidt, Jan [Institute for Solar Energy Research Hamelin (ISFH); Leibniz Universitat Hannover; Brendel, Rolf [Institute for Solar Energy Research Hamelin (ISFH); Leibniz Universitat Hannover; Peibst, Robby [Institute for Solar Energy Research Hamelin (ISFH); Leibniz Universitat Hannover

    2017-10-02

    Despite steady advancements in the efficiency of crystalline Silicon (c-Si) photovoltaics (PV) within the last decades, the theoretical efficiency limit of 29.4 percent depicts an insurmountable barrier for silicon-based single-junction solar cells. Combining the Si cell with a second absorber material on top in a dual junction tandem or triple junction solar cell is an attractive option to surpass this limit significantly. We demonstrate a mechanically stacked GaInP/Si dual-junction cell with an in-house measured efficiency of 31.5 percent and a GaInP/GaAs/Si triple-junction cell with a certified efficiency of 35.4 percent.

  14. CLOUDS IN SUPER-EARTH ATMOSPHERES: CHEMICAL EQUILIBRIUM CALCULATIONS

    Energy Technology Data Exchange (ETDEWEB)

    Mbarek, Rostom; Kempton, Eliza M.-R., E-mail: mbarekro@grinnell.edu, E-mail: kemptone@grinnell.edu [Department of Physics, Grinnell College, Grinnell, IA 50112 (United States)

    2016-08-20

    Recent studies have unequivocally proven the existence of clouds in super-Earth atmospheres. Here we provide a theoretical context for the formation of super-Earth clouds by determining which condensates are likely to form under the assumption of chemical equilibrium. We study super-Earth atmospheres of diverse bulk composition, which are assumed to form by outgassing from a solid core of chondritic material, following Schaefer and Fegley. The super-Earth atmospheres that we study arise from planetary cores made up of individual types of chondritic meteorites. They range from highly reducing to oxidizing and have carbon to oxygen (C:O) ratios that are both sub-solar and super-solar, thereby spanning a range of atmospheric composition that is appropriate for low-mass exoplanets. Given the atomic makeup of these atmospheres, we minimize the global Gibbs free energy of formation for over 550 gases and condensates to obtain the molecular composition of the atmospheres over a temperature range of 350–3000 K. Clouds should form along the temperature–pressure boundaries where the condensed species appear in our calculation. We find that the composition of condensate clouds depends strongly on both the H:O and C:O ratios. For the super-Earth archetype GJ 1214b, KCl and ZnS are the primary cloud-forming condensates at solar composition, in agreement with previous work. However, for oxidizing atmospheres, K{sub 2}SO{sub 4} and ZnO condensates are favored instead, and for carbon-rich atmospheres with super-solar C:O ratios, graphite clouds appear. For even hotter planets, clouds form from a wide variety of rock-forming and metallic species.

  15. Electrically pumped edge-emitting photonic bandgap semiconductor laser

    Science.gov (United States)

    Lin, Shawn-Yu; Zubrzycki, Walter J.

    2004-01-06

    A highly efficient, electrically pumped edge-emitting semiconductor laser based on a one- or two-dimensional photonic bandgap (PBG) structure is described. The laser optical cavity is formed using a pair of PBG mirrors operating in the photonic band gap regime. Transverse confinement is achieved by surrounding an active semiconductor layer of high refractive index with lower-index cladding layers. The cladding layers can be electrically insulating in the passive PBG mirror and waveguide regions with a small conducting aperture for efficient channeling of the injection pump current into the active region. The active layer can comprise a quantum well structure. The quantum well structure can be relaxed in the passive regions to provide efficient extraction of laser light from the active region.

  16. On some classes of super quasi-Einstein manifolds

    International Nuclear Information System (INIS)

    Ozguer, Cihan

    2009-01-01

    Quasi-Einstein and generalized quasi-Einstein manifolds are the generalizations of Einstein manifolds. In this study, we consider a super quasi-Einstein manifold, which is another generalization of an Einstein manifold. We find the curvature characterizations of a Ricci-pseudosymmetric and a quasi-conformally flat super quasi-Einstein manifolds. We also consider the condition C ∼ .S=0 on a super quasi-Einstein manifold, where C ∼ and S denote the quasi-conformal curvature tensor and Ricci tensor of the manifold, respectively.

  17. SuperB Bunch-By-Bunch Feedback R&D

    Energy Technology Data Exchange (ETDEWEB)

    Drago, A.; Beretta, M.; /Frascati; Bertsche, K.; Novokhatski, A.; /SLAC; Migliorati, M.; /Rome U.

    2011-08-12

    The SuperB project has the goal to build in Italy, in the Frascati or Tor Vergata area, an asymmetric e{sup +}/e{sup -} Super Flavor Factory to achieve a peak luminosity > 10**36 cm{sup -2} s{sup -1}. The SuperB design is based on collisions with extremely low vertical emittance beams and high beam currents. A source of emittance growth comes from the bunch by bunch feedback systems producing high power correction signals to damp the beams. To limit any undesirable effect, a large R&D program is in progress, partially funded by the INFN Fifth National Scientific Committee through the SFEED (SuperB Feedback) project approved within the 2010 budget. The SuperB project [1] has the goal to build in Italy, in the Frascati or Tor Vergata area, an asymmetric e{sup +}/e{sup -} Super Flavor Factory to achieve a peak luminosity > 10**36 cm{sup -2} s{sup -1}. In the last and current years, the machine layout has been deeply modified, in particular the main rings are now shorter and an option with high currents has been foreseen. In the fig.1 the new SuperB layout is shown. From bunch-by-bunch feedback point of view, the simultaneous presence in the machine parameters, of very low emittance, of the order of 5-10 pm in the vertical plane, and very high currents, at level of 4 Ampere for the Low Energy Ring, asks for designing very carefully the bunch-by-bunch feedback systems. The parameter list is presented in Fig. 2. The bunch-by-bunch feedback design must take care of the risky and exciting challenges proposed in the SuperB specifications, but it should consider also some other important aspects: flexibility in terms of being able to cope to unexpected beam behaviours [2], [3] legacy of previous version experience [4], [5] and internal powerful diagnostics [6] as in the systems previously used in PEP-II and DAFNE [7].

  18. A superhard sp3 microporous carbon with direct bandgap

    Science.gov (United States)

    Pan, Yilong; Xie, Chenlong; Xiong, Mei; Ma, Mengdong; Liu, Lingyu; Li, Zihe; Zhang, Shuangshuang; Gao, Guoying; Zhao, Zhisheng; Tian, Yongjun; Xu, Bo; He, Julong

    2017-12-01

    Carbon allotropes with distinct sp, sp2, and sp3 hybridization possess various different properties. Here, a novel all-sp3 hybridized tetragonal carbon, namely the P carbon, was predicted by the evolutionary particle swarm structural search. It demonstrated a low density among all-sp3 carbons, due to the corresponding distinctive microporous structure. P carbon is thermodynamically stable than the known C60 and could be formed through the single-walled carbon nanotubes (SWCNTs) compression. P carbon is a direct bandgap semiconductor displaying a strong and superhard nature. The unique combination of electrical and mechanical properties constitutes P carbon a potential superhard material for semiconductor industrial fields.

  19. Electromagnetic waves in single- and multi-Josephson junctions

    International Nuclear Information System (INIS)

    Matsumoto, Hideki; Koyama, Tomio; Machida, Masahiko

    2008-01-01

    The terahertz wave emission from the intrinsic Josephson junctions is one of recent topics in high T c superconductors. We investigate, by numerical simulation, properties of the electromagnetic waves excited by a constant bias current in the single- and multi-Josephson junctions. Nonlinear equations of phase-differences are solved numerically by treating the effects of the outside electromagnetic fields as dynamical boundary conditions. It is shown that the emitted power of the electromagnetic wave can become large near certain retrapping points of the I-V characteristics. An instability of the inside phase oscillation is related to large amplitude of the oscillatory waves. In the single- (or homogeneous mutli-) Josephson junctions, electromagnetic oscillations can occur either in a form of standing waves (shorter junctions) or by formation of vortex-antivortex pairs (longer junctions). How these two effects affects the behavior of electromagnetic waves in the intrinsic Josephson junctions is discussed

  20. Tunable Nitride Josephson Junctions.

    Energy Technology Data Exchange (ETDEWEB)

    Missert, Nancy A. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Henry, Michael David [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Lewis, Rupert M. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Howell, Stephen W. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Wolfley, Steven L. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Brunke, Lyle Brent [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Wolak, Matthaeus [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

    2017-12-01

    We have developed an ambient temperature, SiO2/Si wafer - scale process for Josephson junctions based on Nb electrodes and Ta x N barriers with tunable electronic properties. The films are fabricated by magnetron sputtering. The electronic properties of the TaxN barriers are controlled by adjusting the nitrogen flow during sputtering. This technology offers a scalable alternative to the more traditional junctions based on AlOx barriers for low - power, high - performance computing.