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Sample records for junction gr current

  1. Current noise in tunnel junctions

    Energy Technology Data Exchange (ETDEWEB)

    Frey, Moritz; Grabert, Hermann [Physikalisches Institut, Universitaet Freiburg, Hermann-Herder-Strasse 3, 79104, Freiburg (Germany)

    2017-06-15

    We study current fluctuations in tunnel junctions driven by a voltage source. The voltage is applied to the tunneling element via an impedance providing an electromagnetic environment of the junction. We use circuit theory to relate the fluctuations of the current flowing in the leads of the junction with the voltage fluctuations generated by the environmental impedance and the fluctuations of the tunneling current. The spectrum of current fluctuations is found to consist of three parts: a term arising from the environmental Johnson-Nyquist noise, a term due to the shot noise of the tunneling current and a third term describing the cross-correlation between these two noise sources. Our phenomenological theory reproduces previous results based on the Hamiltonian model for the dynamical Coulomb blockade and provides a simple understanding of the current fluctuation spectrum in terms of circuit theory and properties of the average current. Specific results are given for a tunnel junction driven through a resonator. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  2. Fluctuation of heat current in Josephson junctions

    Directory of Open Access Journals (Sweden)

    P. Virtanen

    2015-02-01

    Full Text Available We discuss the statistics of heat current between two superconductors at different temperatures connected by a generic weak link. As the electronic heat in superconductors is carried by Bogoliubov quasiparticles, the heat transport fluctuations follow the Levitov–Lesovik relation. We identify the energy-dependent quasiparticle transmission probabilities and discuss the resulting probability density and fluctuation relations of the heat current. We consider multichannel junctions, and find that heat transport in diffusive junctions is unique in that its statistics is independent of the phase difference between the superconductors.

  3. Critical current of pure SNS junctions

    International Nuclear Information System (INIS)

    Golub, A.A.; Bezzub, O.P.

    1982-01-01

    Boundary conditions at the superconductor-normal metal interface are determined, taking into account the differences in the effective masses and the density of states of the metals constituting the transition and assumed to be pure. The potential barrier of the interface is chosen to be zero. The critical current of the junction is calculated [ru

  4. Edge currents in frustrated Josephson junction ladders

    Science.gov (United States)

    Marques, A. M.; Santos, F. D. R.; Dias, R. G.

    2016-09-01

    We present a numerical study of quasi-1D frustrated Josephson junction ladders with diagonal couplings and open boundary conditions, in the large capacitance limit. We derive a correspondence between the energy of this Josephson junction ladder and the expectation value of the Hamiltonian of an analogous tight-binding model, and show how the overall superconducting state of the chain is equivalent to the minimum energy state of the tight-binding model in the subspace of one-particle states with uniform density. To satisfy the constraint of uniform density, the superconducting state of the ladder is written as a linear combination of the allowed k-states of the tight-binding model with open boundaries. Above a critical value of the parameter t (ratio between the intra-rung and inter-rung Josephson couplings) the ladder spontaneously develops currents at the edges, which spread to the bulk as t is increased until complete coverage is reached. Above a certain value of t, which varies with ladder size (t = 1 for an infinite-sized ladder), the edge currents are destroyed. The value t = 1 corresponds, in the tight-binding model, to the opening of a gap between two bands. We argue that the disappearance of the edge currents with this gap opening is not coincidental, and that this points to a topological origin for these edge current states.

  5. Quasiparticle current in superconductor-semiconductor-superconductor junctions

    International Nuclear Information System (INIS)

    Tartakovskij, A.V.; Fistul', M.V.

    1988-01-01

    It is shown that the quasiparticle current in a superconductor-semiconductor-superconductor junction may significantly increase as a result of resonant passage of the quasiparticle along particular trajectories from periodically situated localized centers. A prediction of the theory is that with increasing junction resistance there should be a change from an excessive current to a insufficient current on the current-voltage characteristics (at high voltages). The effect of transparency of the boundaries on resonance tunneling in such junctions is also investigated

  6. Field modulation of the critical current in magnetic Josephson junctions

    International Nuclear Information System (INIS)

    Blamire, M G; Smiet, C B; Banerjee, N; Robinson, J W A

    2013-01-01

    The dependence of the critical current of a simple Josephson junction on the applied magnetic field is well known and, for a rectangular junction, gives rise to the classic ‘Fraunhofer’ modulation with periodic zeros at the fields that introduce a flux quantum into the junction region. Much recent work has been performed on Josephson junctions that contain magnetic layers. The magnetization of such layers introduces additional flux into the junction and, for large junction areas or strong magnetic materials, can significantly distort the modulation of the critical current and strongly suppress the maximum critical current. The growing interest in junctions that induce odd-frequency triplet pairing in a ferromagnet, and the need to make quantitative comparisons with theory, mean that a full understanding of the role of magnetic barriers in controlling the critical current is necessary. This paper analyses the effect of magnetism and various magnetic configurations on Josephson critical currents; the overall treatment applies to junctions of general shape, but the specific cases of square and rectangular junctions are considered. (paper)

  7. Critical current fluctuation in a microwave-driven Josephson junction

    International Nuclear Information System (INIS)

    Dong Ning; Sun Guozhu; Wang Yiwen; Cao Junyu; Yu Yang; Chen Jian; Kang Lin; Xu Weiwei; Han Siyuan; Wu Peiheng

    2007-01-01

    Josephson junction devices are good candidates for quantum computation. A large energy splitting was observed in the spectroscopy of a superconducting Josephson junction. The presence of the critical current fluctuation near the energy splitting indicated coupling between the junction and a two-level system. Furthermore, we find that this fluctuation is microwave dependent. It only appears at certain microwave frequency. This relation suggested that the decoherence of qubits is influenced by the necessary computing operations

  8. Dissipative current in SIFS Josephson junctions

    NARCIS (Netherlands)

    Vasenko, A.; Kawabata, S.; Golubov, Alexandre Avraamovitch; Kupriyanov, M. Yu; Hekking, F.W.J.

    2010-01-01

    We investigate superconductor/insulator/ferromagnet/superconductor (SIFS) tunnel Josephson junctions in the dirty limit, using the quasiclassical theory. We consider the case of a strong tunnel barrier such that the left S layer and the right FS bilayer are decoupled. We calculate quantitatively the

  9. Magnetic field behavior of current steps in long Josephson junctions

    International Nuclear Information System (INIS)

    Costabile, G.; Cucolo, A.M.; Pace, S.; Parmentier, R.D.; Savo, B.; Vaglio, R.

    1980-01-01

    The zero-field steps, or dc current singularities, in the current-voltage characteristics of long Josephson tunnel junctions, first reported by Chen et al., continue to attract research interest both because their study can provide fundamental information on the dynamics of fluxons in such junctions and because they are accompanied by the emission of microwave radiation from the junction, which may be exploitable in practical oscillator applications. The purpose of this paper is to report some experimental observations of the magnetic field behavior of the steps in junctions fabricated in our Laboratory and to offer a qualitative explanation for this behavior. Measurements have been made both for very long (L >> lambdasub(J)) and for slightly long (L approx. >= lambdasub(J)) junctions with a view toward comparing our results with those of other workers. (orig./WRI)

  10. Two coupled Josephson junctions: dc voltage controlled by biharmonic current

    International Nuclear Information System (INIS)

    Machura, L; Spiechowicz, J; Kostur, M; Łuczka, J

    2012-01-01

    We study transport properties of two Josephson junctions coupled by an external shunt resistance. One of the junctions (say, the first) is driven by an unbiased ac current consisting of two harmonics. The device can rectify the ac current yielding a dc voltage across the first junction. For some values of coupling strength, controlled by an external shunt resistance, a dc voltage across the second junction can be generated. By variation of system parameters such as the relative phase or frequency of two harmonics, one can conveniently manipulate both voltages with high efficiency, e.g. changing the dc voltages across the first and second junctions from positive to negative values and vice versa. (paper)

  11. The critical current of point symmetric Josephson tunnel junctions

    International Nuclear Information System (INIS)

    Monaco, Roberto

    2016-01-01

    Highlights: • We disclose some geometrical properties of the critical current field dependence that apply to a large class of Josephson junctions characterized by a point symmetric shape. • The developed theory is valid for any orientation of the applied magnetic field, therefore it allows the determine the consequences of field misalignment in the experimental setups. • We also address that the threshold curves of Josephson tunnel junctions with complex shapes can be expressed as a linear combination of the threshold curves of junctions with simpler point symmetric shapes. - Abstract: The physics of Josephson tunnel junctions drastically depends on their geometrical configurations. The shape of the junction determines the specific form of the magnetic-field dependence of its Josephson current. Here we address the magnetic diffraction patterns of specially shaped planar Josephson tunnel junctions in the presence of an in-plane magnetic field of arbitrary orientations. We focus on a wide ensemble of junctions whose shape is invariant under point reflection. We analyze the implications of this type of isometry and derive the threshold curves of junctions whose shape is the union or the relative complement of two point symmetric plane figures.

  12. What happens in Josephson junctions at high critical current densities

    Science.gov (United States)

    Massarotti, D.; Stornaiuolo, D.; Lucignano, P.; Caruso, R.; Galletti, L.; Montemurro, D.; Jouault, B.; Campagnano, G.; Arani, H. F.; Longobardi, L.; Parlato, L.; Pepe, G. P.; Rotoli, G.; Tagliacozzo, A.; Lombardi, F.; Tafuri, F.

    2017-07-01

    The impressive advances in material science and nanotechnology are more and more promoting the use of exotic barriers and/or superconductors, thus paving the way to new families of Josephson junctions. Semiconducting, ferromagnetic, topological insulator and graphene barriers are leading to unconventional and anomalous aspects of the Josephson coupling, which might be useful to respond to some issues on key problems of solid state physics. However, the complexity of the layout and of the competing physical processes occurring in the junctions is posing novel questions on the interpretation of their phenomenology. We classify some significant behaviors of hybrid and unconventional junctions in terms of their first imprinting, i.e., current-voltage curves, and propose a phenomenological approach to describe some features of junctions characterized by relatively high critical current densities Jc. Accurate arguments on the distribution of switching currents will provide quantitative criteria to understand physical processes occurring in high-Jc junctions. These notions are universal and apply to all kinds of junctions.

  13. Majorana splitting from critical currents in Josephson junctions

    Science.gov (United States)

    Cayao, Jorge; San-Jose, Pablo; Black-Schaffer, Annica M.; Aguado, Ramón; Prada, Elsa

    2017-11-01

    A semiconducting nanowire with strong Rashba spin-orbit coupling and coupled to a superconductor can be tuned by an external Zeeman field into a topological phase with Majorana zero modes. Here we theoretically investigate how this exotic topological superconductor phase manifests in Josephson junctions based on such proximitized nanowires. In particular, we focus on critical currents in the short junction limit (LN≪ξ , where LN is the junction length and ξ is the superconducting coherence length) and show that they contain important information about nontrivial topology and Majoranas. This includes signatures of the gap inversion at the topological transition and a unique oscillatory pattern that originates from Majorana interference. Interestingly, this pattern can be modified by tuning the transmission across the junction, thus providing complementary evidence of Majoranas and their energy splittings beyond standard tunnel spectroscopy experiments, while offering further tunability by virtue of the Josephson effect.

  14. Josephson junction analog and quasiparticle-pair current

    DEFF Research Database (Denmark)

    Bak, Christen Kjeldahl; Pedersen, Niels Falsig

    1973-01-01

    A close analogy exists between a Josephson junction and a phase-locked loop. A new type of electrical analog based on this principle is presented. It is shown that the inclusion in this analog of a low-pass filter gives rise to a current of the same form as the Josephson quasiparticle-pair current....... A simple picture of the quasiparticle-pair current, which gives the right dependences, is obtained by assuming a junction cutoff frequency to be at the energy gap. ©1973 American Institute of Physics...

  15. Pure spin polarized current through a full magnetic silicene junction

    Science.gov (United States)

    Lorestaniweiss, Zeinab; Rashidian, Zeinab

    2018-06-01

    Using the Landauer-Buttiker formula, we investigate electronic transport in silicene junction composed of ferromagnetic silicene. The direction of magnetization in the middle region may change in a plane perpendicular to the junction, whereas the magnetization direction keep fixed upward in silicene electrodes. We investigate how the various magnetization directions in the middle region affect the electronic transport. We demonstrate that conductance depends on the orientation of magnetizations in the middle region. It is found that by changing the direction of the magnetization in the middle region, a pure spin up current can be achieved. This achievement makes this full magnetic junction a good design for a full spin-up current polarizer.

  16. Micromagnetic modeling of critical current oscillations in magnetic Josephson junctions

    NARCIS (Netherlands)

    golovchanskiy, I.A.; Bol'ginov, V.V.; Stolyarov, V.S.; Abramov, N.N.; Ben Hamida, A.; Emelyanova, O.V.; Stolyarov, B.S.; Kupriyanov, M..Y.; Golubov, Alexandre Avraamovitch; Ryazanov, V.V.

    2016-01-01

    In this work we propose and explore an effective numerical approach for investigation of critical current dependence on applied magnetic field for magnetic Josephson junctions with in-plane magnetization orientation. This approach is based on micromagnetic simulation of the magnetization reversal

  17. Online junction temperature measurement using peak gate current

    DEFF Research Database (Denmark)

    Baker, Nick; Munk-Nielsen, Stig; Iannuzzo, Francesco

    2015-01-01

    A new method for junction temperature measurement of MOS-gated power semiconductor switches is presented. The measurement method involves detecting the peak voltage over the external gate resistor of an IGBT or MOSFET during turn-on. This voltage is directly proportional to the peak gate current...

  18. Field emission current from a junction field-effect transistor

    International Nuclear Information System (INIS)

    Monshipouri, Mahta; Abdi, Yaser

    2015-01-01

    Fabrication of a titanium dioxide/carbon nanotube (TiO 2 /CNT)-based transistor is reported. The transistor can be considered as a combination of a field emission transistor and a junction field-effect transistor. Using direct current plasma-enhanced chemical vapor deposition (DC-PECVD) technique, CNTs were grown on a p-typed (100)-oriented silicon substrate. The CNTs were then covered by TiO 2 nanoparticles 2–5 nm in size, using an atmospheric pressure CVD technique. In this device, TiO 2 /CNT junction is responsible for controlling the emission current. High on/off-current ratio and proper gate control are the most important advantages of device. A model based on Fowler–Nordheim equation is utilized for calculation of the emission current and the results are compared with experimental data. The effect of TiO 2 /CNT hetero-structure is also investigated, and well modeled

  19. Branching in current-voltage characteristics of intrinsic Josephson junctions

    International Nuclear Information System (INIS)

    Shukrinov, Yu M; Mahfouzi, F

    2007-01-01

    We study branching in the current-voltage characteristics of the intrinsic Josephson junctions of high-temperature superconductors in the framework of the capacitively coupled Josephson junction model with diffusion current. A system of dynamical equations for the gauge-invariant phase differences between superconducting layers for a stack of ten intrinsic junctions has been numerically solved. We have obtained a total branch structure in the current-voltage characteristics. We demonstrate the existence of a 'breakpoint region' on the current-voltage characteristics and explain it as a result of resonance between Josephson and plasma oscillations. The effect of the boundary conditions is investigated. The existence of two outermost branches and correspondingly two breakpoint regions for the periodic boundary conditions is shown. One branch, which is observed only at periodic boundary conditions, corresponds to the propagating of the plasma mode. The second one corresponds to the situation when the charge oscillations on the superconducting layers are absent, excluding the breakpoint. A time dependence of the charge oscillations at breakpoints is presented

  20. Dynamics of the Josephson multi-junction system with junctions characterized by non-sinusoidal current - phase relationship

    International Nuclear Information System (INIS)

    Abal'osheva, I.; Lewandowski, S.J.

    2004-01-01

    It is shown that the inclusion of junctions characterized by non-sinusoidal current - phase relationship in the systems composed of multiple Josephson junctions - results in the appearance of additional system phase states. Numerical simulations and stability considerations confirm that those phase states can be realized in practice. Moreover, spontaneous formation of the grain boundary junctions in high-T c superconductors with non-trivial current-phase relations due to the d-wave symmetry of the order parameter is probable. Switching between the phase states of multiple grain boundary junction systems can lead to additional 1/f noise in high-T c superconductors. (author)

  1. Phase dynamics of low critical current density YBCO Josephson junctions

    Energy Technology Data Exchange (ETDEWEB)

    Massarotti, D., E-mail: dmassarotti@na.infn.it [Dipartimento di Fisica, Università degli Studi di Napoli Federico II, Via Cinthia, 80126 Napoli (Italy); CNR-SPIN UOS Napoli, Complesso Universitario di Monte Sant’Angelo, Via Cinthia, 80126 Napoli (Italy); Stornaiuolo, D. [Dipartimento di Fisica, Università degli Studi di Napoli Federico II, Via Cinthia, 80126 Napoli (Italy); Rotoli, G. [Dipartimento di Ingegneria Industriale e dell’Informazione, Seconda Università di Napoli, Via Roma 29, 81031 Aversa (CE) (Italy); Carillo, F. [Nest, Scuola Normale Superiore, Piazza San Silvestro 12, 56126 Pisa (Italy); Galletti, L. [Dipartimento di Fisica, Università degli Studi di Napoli Federico II, Via Cinthia, 80126 Napoli (Italy); CNR-SPIN UOS Napoli, Complesso Universitario di Monte Sant’Angelo, Via Cinthia, 80126 Napoli (Italy); Longobardi, L. [Dipartimento di Ingegneria Industriale e dell’Informazione, Seconda Università di Napoli, Via Roma 29, 81031 Aversa (CE) (Italy); American Physical Society, 1 Research Road, Ridge, NY 11961 (United States); Beltram, F. [Nest, Scuola Normale Superiore, Piazza San Silvestro 12, 56126 Pisa (Italy); Tafuri, F. [CNR-SPIN UOS Napoli, Complesso Universitario di Monte Sant’Angelo, Via Cinthia, 80126 Napoli (Italy); Dipartimento di Ingegneria Industriale e dell’Informazione, Seconda Università di Napoli, Via Roma 29, 81031 Aversa (CE) (Italy)

    2014-08-15

    Highlights: • We study the phase dynamics of YBaCuO Josephson junctions using various tools. • We derive information on the dissipation in a wide range of transport parameters. • Dissipation in such devices can be described by a frequency dependent damping model. • The use of different substrates allows us to tune the shell circuit. - Abstract: High critical temperature superconductors (HTS) based devices can have impact in the study of the phase dynamics of Josephson junctions (JJs) thanks to the wide range of junction parameters they offer and to their unconventional properties. Measurements of current–voltage characteristics and of switching current distributions constitute a direct way to classify different regimes of the phase dynamics and of the transport, also in nontrivial case of the moderately damped regime (MDR). MDR is going to be more and more common in JJs with advances in nanopatterning superconductors and synthesizing novel hybrid systems. Distinctive signatures of macroscopic quantum tunneling and of thermal activation in presence of different tunable levels of dissipation have been detected in YBCO grain boundary JJs. Experimental data are supported by Monte Carlo simulations of the phase dynamics, in a wide range of temperatures and dissipation levels. This allows us to quantify dissipation in the MDR and partially reconstruct a phase diagram as guideline for a wide range of moderately damped systems.

  2. Field emission current from a junction field-effect transistor

    Energy Technology Data Exchange (ETDEWEB)

    Monshipouri, Mahta; Abdi, Yaser, E-mail: y.abdi@ut.ac.ir [University of Tehran, Nano-Physics Research Laboratory, Department of Physics (Iran, Islamic Republic of)

    2015-04-15

    Fabrication of a titanium dioxide/carbon nanotube (TiO{sub 2}/CNT)-based transistor is reported. The transistor can be considered as a combination of a field emission transistor and a junction field-effect transistor. Using direct current plasma-enhanced chemical vapor deposition (DC-PECVD) technique, CNTs were grown on a p-typed (100)-oriented silicon substrate. The CNTs were then covered by TiO{sub 2} nanoparticles 2–5 nm in size, using an atmospheric pressure CVD technique. In this device, TiO{sub 2}/CNT junction is responsible for controlling the emission current. High on/off-current ratio and proper gate control are the most important advantages of device. A model based on Fowler–Nordheim equation is utilized for calculation of the emission current and the results are compared with experimental data. The effect of TiO{sub 2}/CNT hetero-structure is also investigated, and well modeled.

  3. Coherent current states in mesoscopic four-terminal Josephson junction

    International Nuclear Information System (INIS)

    Zareyan, M.; Omelyanchouk, A.N.

    1999-01-01

    A theory is offered for the ballistic 4-terminal Josephson junction. The studied system consist of a mesoscopic two-dimensional normal rectangular layer which is attached on each side to the bulk superconducting banks (terminals). A relation is obtained between the currents through the different terminals, that is valid for arbitrary temperatures and junction sizes. The nonlocal coupling of the supercurrent leads to a new effect, specific for the mesoscopic weak link between two superconducting rings; an applied magnetic flux through one of the rings produces a magnetic flux in the other ring even in the absence of an external flux through the other one. The phase dependent distributions of the local density of Andreev states, of the supercurrents and of the induced order parameter are obtained. The 'interference pattern' for the anomalous average inside the two-dimensional region cam be regulated by the applied magnetic fluxes or the transport currents. For some values of the phase differences between the terminals, the current vortex state and two-dimensional phase slip center appear

  4. Capacitance measurement of Josephson tunnel junctions with microwave-induced dc quasiparticle tunneling currents

    International Nuclear Information System (INIS)

    Hamasaki, K.; Yoshida, K.; Irie, F.; Enpuku, K.

    1982-01-01

    The microwave response of the dc quasiparticle tunneling current in Josephson tunnel junctions, where the Josephson current is suppressed by an external magnetic field, has been studied quantitatively in order to clarify its characteristics as a probe for the measurement of the junction capacitance. Extensive experiments for both small and long junctions are carried out for distinguishing between microwave behaviors of lumped and distributed constant junctions. It is shown that the observed voltage dependence of the dc quasiparticle tunneling current modified by an applied rf field is in good agreement with a theoretical result which takes into account the influence of the microwave circuit connected to the junction. The comparison between theory and experiment gives the magnitude of the internal rf field in the junction. Together with the applied rf field, this internal rf field leads to the junction rf impedance which is dominated by the junction capacitance in our experimental condition. In the case of lumped junctions, this experimental rf impedance is in reasonable agreement with the theoretical one with the junction capacitance estimated from the Fiske step of the distributed junction fabricated on the same substrate; the obtained ratio of the experimental impedance to the theoretical one is approximately 0.6--1.7. In the case of distributed junctions, however, experimental values of their characteristic impedances are approximately 0.2--0.3 of theoretical values calculated by assuming the one-dimensional junction model and taking account of the standing-wave effect in the junction

  5. The persistent current and energy spectrum on a driven mesoscopic LC-circuit with Josephson junction

    Science.gov (United States)

    Pahlavanias, Hassan

    2018-03-01

    The quantum theory for a mesoscopic electric circuit including a Josephson junction with charge discreteness is studied. By considering coupling energy of the mesoscopic capacitor in Josephson junction device, a Hamiltonian describing the dynamics of a quantum mesoscopic electric LC-circuit with charge discreteness is introduced. We first calculate the persistent current on a quantum driven ring including Josephson junction. Then we obtain the persistent current and energy spectrum of a quantum mesoscopic electrical circuit which includes capacitor, inductor, time-dependent external source and Josephson junction.

  6. Effect of quasi-particle injection on retrapping current of Josephson junction

    OpenAIRE

    Utsunomiya, K.; Yagi, Ryuta

    2006-01-01

    We report that the energy dissipation of Josephson junction can be controlled by quasi-particle injection. We fabricated two Josephson junctions on the narrow aluminum wire and controlled the energy dissipation of one junction by quasi-particle injection from the other. We observed the retrapping current increased as the quasi-particles were injected. We also studied the heating effect of our measurement.

  7. Macroscopic quantum effects in the zero voltage state of the current biased Josephson junction

    International Nuclear Information System (INIS)

    Clarke, J.; Devoret, M.H.; Martinis, J.; Esteve, D.

    1985-05-01

    When a weak microwave current is applied to a current-biased Josephson tunnel junction in the thermal limit the escape rate from the zero voltage state is enhanced when the microwave frequency is near the plasma frequency of the junction. The resonance curve is markedly asymmetric because of the anharmonic properties of the potential well: this behavior is well explained by a computer simulation using a resistively shunted junction model. This phenomenon of resonant activation enables one to make in situ measurements of the capacitance and resistance shunting the junction, including contributions from the complex impedance presented by the current leads. For the relatively large area junctions studied in these experiments, the external capacitive loading was relatively unimportant, but the damping was entirely dominated by the external resistance

  8. Analytical description of ballistic spin currents and torques in magnetic tunnel junctions

    KAUST Repository

    Chshiev, M.; Manchon, Aurelien; Kalitsov, A.; Ryzhanova, N.; Vedyayev, A.; Strelkov, N.; Butler, W. H.; Dieny, B.

    2015-01-01

    In this work we demonstrate explicit analytical expressions for both charge and spin currents which constitute the 2×2 spinor in magnetic tunnel junctions with noncollinear magnetizations under applied voltage. The calculations have been performed

  9. Evaluation of the Kinetic Property of Single-Molecule Junctions by Tunneling Current Measurements.

    Science.gov (United States)

    Harashima, Takanori; Hasegawa, Yusuke; Kiguchi, Manabu; Nishino, Tomoaki

    2018-01-01

    We investigated the formation and breaking of single-molecule junctions of two kinds of dithiol molecules by time-resolved tunneling current measurements in a metal nanogap. The resulting current trajectory was statistically analyzed to determine the single-molecule conductance and, more importantly, to reveal the kinetic property of the single-molecular junction. These results suggested that combining a measurement of the single-molecule conductance and statistical analysis is a promising method to uncover the kinetic properties of the single-molecule junction.

  10. Experimental evaluation of IGBT junction temperature measurement via peak gate current

    DEFF Research Database (Denmark)

    Baker, Nick; Munk-Nielsen, Stig; Iannuzzo, Francesco

    2015-01-01

    Temperature sensitive electrical parameters allow junction temperature measurements on power semiconductors without modification to module packaging. The peak gate current has recently been proposed for IGBT junction temperature measurement and relies on the temperature dependent resistance...... of the gate pad. Consequently, a consideration of chip geometry and location of the gate pad is required before interpreting temperature data from this method. Results are also compared with a traditional electrical temperature measurement method: the voltage drop under low current....

  11. Similarities between normal- and super-currents in topological insulator magnetic tunnel junctions

    International Nuclear Information System (INIS)

    Soodchomshom, Bumned; Chantngarm, Peerasak

    2010-01-01

    This work compares the normal-current in a NM/Fi/NM junction with the super-current in a SC/Fi/SC junction, where both are topological insulator systems. NM and Fi are normal region and ferromagnetic region of thickness d with exchange energy m playing a role of the mass of the Dirac electrons and with the gate voltage V G , respectively. SC is superconducting region induced by a s-wave superconductor. We show that, interestingly, the critical super-current passing through a SC/Fi/SC junction behaves quite similar to the normal-current passing through a NM/Fi/NM junction. The normal-current and super-current exhibit N-peak oscillation, found when currents are plotted as a function of the magnetic barrier strength χ ∼ md/hv F . With the barrier strength Z ∼ V G d/hv F , the number of peaks N is determined through the relation Z ∼ Nπ + σπ (with 0 < σ≤1 for χ < Z). The normal- and the super-currents also exhibit oscillating with the same height for all of peaks, corresponding to the Dirac fermion tunneling behavior. These anomalous oscillating currents due to the interplay between gate voltage and magnetic field in the barrier were not found in graphene-based NM/Fi/NM and SC/Fi/SC junctions. This is due to the different magnetic effect between the Dirac fermions in topological insulator and graphene.

  12. Effect of the critical current density and the junction size on the leakage current of Nb/Al-AlOx/Nb superconducting tunnel junctions for radiation detection

    International Nuclear Information System (INIS)

    Joosse, K.; Nakagawa, Hiroshi; Akoh, Hiroshi; Takada, Susumu; Maehata, Keisuke; Ishibashi, Kenji.

    1996-01-01

    Nb/Al-AlO x /Nb superconducting tunnel junctions (STJ's) designed for X-ray detection have been fabricated. The behavior of the low-temperature subgap leakage current, which severely limits the energy resolution obtained in such devices, is investigated. From trends in the dependence of the leakage currents on the critical current density and the size of the STJ, as well as from the low-temperature current-voltage characteristics, and an analysis of the base electrode surface morphology, it is concluded that physical defects in the barrier region are the most probable cause of the leakage currents. Suggestions are given for optimization of the device processing. (author)

  13. Charge and spin current oscillations in a tunnel junction induced by magnetic field pulses

    Energy Technology Data Exchange (ETDEWEB)

    Dartora, C.A., E-mail: cadartora@eletrica.ufpr.br [Electrical Engineering Department, Federal University of Parana (UFPR), C.P. 19011 Curitiba, 81.531-970 PR (Brazil); Nobrega, K.Z., E-mail: bzuza1@yahoo.com.br [Federal Institute of Education, Science and Technolgy of Maranhão (IFMA), Av. Marechal Castelo Branco, 789, São Luís, 65.076-091 MA (Brazil); Cabrera, G.G., E-mail: cabrera@ifi.unicamp.br [Instituto de Física ‘Gleb Wataghin’, Universidade Estadual de Campinas (UNICAMP), C.P. 6165, Campinas 13.083-970 SP (Brazil)

    2016-08-15

    Usually, charge and spin transport properties in tunnel junctions are studied in the DC bias regime and/or in the adiabatic regime of time-varying magnetic fields. In this letter, the temporal dynamics of charge and spin currents in a tunnel junction induced by pulsed magnetic fields is considered. At low bias voltages, energy and momentum of the conduction electrons are nearly conserved in the tunneling process, leading to the description of the junction as a spin-1/2 fermionic system coupled to time-varying magnetic fields. Under the influence of pulsed magnetic fields, charge and spin current can flow across the tunnel junction, displaying oscillatory behavior, even in the absence of DC bias voltage. A type of spin capacitance function, in close analogy to electric capacitance, is predicted.

  14. Maximizing ion current rectification in a bipolar conical nanopore fluidic diode using optimum junction location.

    Science.gov (United States)

    Singh, Kunwar Pal

    2016-10-12

    The ion current rectification has been obtained as a function of the location of a heterojunction in a bipolar conical nanopore fluidic diode for different parameters to determine the junction location for maximum ion current rectification using numerical simulations. Forward current peaks for a specific location of the junction and reverse current decreases with the junction location due to a change in ion enrichment/depletion in the pore. The optimum location of the heterojunction shifts towards the tip with base/tip diameter and surface charge density, and towards the base with the electrolyte concentration. The optimum location of the heterojunction has been approximated by an equation as a function of pore length, base/tip diameter, surface charge density and electrolyte concentration. The study is useful to design a rectifier with maximum ion current rectification for practical purposes.

  15. Coincidence of features of emitted THz electromagnetic wave power form a single Josephson junction and different current components

    Science.gov (United States)

    Hamdipour, Mohammad

    2017-12-01

    By applying a voltage to a Josephson junction, the charge in superconducting layers (S-layers) will oscillate. Wavelength of the charge oscillations in S-layers is related to external current in junction, by increasing the external current, the wavelength will decrease which cause in some currents the wavelength be incommensurate with width of junction, so the CVC shows Fiske like steps. External current throwing along junction has some components, resistive, capacitive and superconducting current, beside these currents there is a current in lateral direction of junction, (x direction). On the other hand, the emitted electromagnetic wave power in THz region is related to AC component of electric field in junction, which itself is related to charge density in S-layers, which is related to currents in the system. So we expect that features of variation of current components reflect the features of emitted THz power form junction. Here we study in detail the superconductive current in a long Josephson junction (JJ), the current voltage characteristics (CVC) of junction and emitted THz power from the system. Then we compare the results. Comparing the results we see that there is a good qualitative coincidence in features of emitted THz power and supercurrent in junction.

  16. Harmonic and reactive behavior of the quasiparticle tunnel current in SIS junctions

    Energy Technology Data Exchange (ETDEWEB)

    Rashid, H., E-mail: hawal@chalmers.se; Desmaris, V.; Pavolotsky, A.; Belitsky, V. [Group for Advanced Receiver Development, Earth and Space Sciences Department, Chalmers University of Technology, Gothenburg, 412 96 (Sweden)

    2016-04-15

    In this paper, we show theoretically and experimentally that the reactive quasiparticle tunnel current of the superconductor tunnel junction could be directly measured at specific bias voltages for the higher harmonics of the quasiparticle tunnel current. We used the theory of quasiparticle tunneling to study the higher harmonics of the quasiparticle tunnel current in superconducting tunnel junction in the presence of rf irradiation. The impact of the reactive current on the harmonic behavior of the quasiparticle tunnel current was carefully studied by implementing a practical model with four parameters to model the dc I-V characteristics of the superconducting tunnel junction. The measured reactive current at the specific bias voltage is in good agreement with our theoretically calculated reactive current through the Kramers-Kronig transform. This study also shows that there is an excellent correspondence between the behavior of the predicted higher harmonics using the previously established theory of quasiparticle tunnel current in superconducting tunnel junctions by J.R. Tucker and M.J. Feldman and the measurements presented in this paper.

  17. Harmonic and reactive behavior of the quasiparticle tunnel current in SIS junctions

    International Nuclear Information System (INIS)

    Rashid, H.; Desmaris, V.; Pavolotsky, A.; Belitsky, V.

    2016-01-01

    In this paper, we show theoretically and experimentally that the reactive quasiparticle tunnel current of the superconductor tunnel junction could be directly measured at specific bias voltages for the higher harmonics of the quasiparticle tunnel current. We used the theory of quasiparticle tunneling to study the higher harmonics of the quasiparticle tunnel current in superconducting tunnel junction in the presence of rf irradiation. The impact of the reactive current on the harmonic behavior of the quasiparticle tunnel current was carefully studied by implementing a practical model with four parameters to model the dc I-V characteristics of the superconducting tunnel junction. The measured reactive current at the specific bias voltage is in good agreement with our theoretically calculated reactive current through the Kramers-Kronig transform. This study also shows that there is an excellent correspondence between the behavior of the predicted higher harmonics using the previously established theory of quasiparticle tunnel current in superconducting tunnel junctions by J.R. Tucker and M.J. Feldman and the measurements presented in this paper.

  18. Effect of Abrikosov vortices on Josephson junction currents in high temperature superconductors

    International Nuclear Information System (INIS)

    Mitchell, E.; Mueller, K.-H.

    2000-01-01

    Full text: The current-carrying capacity of high temperature superconductors (HTS) is limited by the weak links which form between individual grains. We investigate the role of Abrikosov vortices (AV) and inhomogeneities at the intergrain boundary by examining the high magnetic field characteristics of HTS thin film grain boundary junctions. We model the effects of junction inhomogeneity, AV's and vortex pinning by solving the inhomogeneous London equation. The calculations show that both inhomogeneities and the presence of AV's improve the current-carrying capacity across grain boundaries at high magnetic fields. Our experimental measurements of the irreversibility of the junction critical current density J c (H a ) find good agreement with the model

  19. Visualization of the current density in Josephson junctions with 0- and π-facets

    International Nuclear Information System (INIS)

    Guerlich, Christian

    2010-01-01

    With Low-Temperature-Electron-Microscopy (LTSEM) it is possible to analyse the transport properties of solids at low temperatures. In particular it is possible to image the supercurrent density j s in Josephson junctions. This was demonstrated by comparing TTREM-images with calculated values for j s . In this thesis ramp-type Nd 2-x Ce x CuO 4-y /Nb-Josephson-junctions (NCCO/Nb) and Josephson junctions with a ferromagnetic interlayer Nb/Al-Al 2 O 3 /NiCu/Nb, so-called SIFS (superconductor-insulator-ferromagnet-superconductor) Josephson junctions were studied.It was demonstrated that LTSEM provides direct imaging of the sign change of the order parameter in superconductors with d x 2 -y 2 -symmetry. This was a controversial issue over the last decade. A step like variation in the thickness of the F-layer allows the fabrication of linear and annular Josephson junctions with different numbers of 0 and π facets. With the LTSEM 0-, π-, 0-π-, 0-π-0-, 0/2-π-0/2-, 20 x (0-π)- as well as square-shaped-, circular- and annular-Josephson-junctions were studied. It was demonstrated, that these junctions are of good quality and have critical current densities up to 42 A/cm 2 at T=4.2 K, which is a record value for SIFS junctions with a NiCu F-layer so far. By comparing the measurements with simulations a first indication of a semifluxon at the 0-π-boundary was found. (orig.)

  20. Current-voltage characteristic of a Josephson junction with randomly distributed Abrikosov vortices

    International Nuclear Information System (INIS)

    Fistul, M.V.; Giuliani, G.F.

    1997-01-01

    We have developed a theory of the current-voltage characteristic of a Josephson junction in the presence of randomly distributed, pinned misaligned Abrikosov vortices oriented perpendicularly to the junction plane. Under these conditions the Josephson phase difference var-phi acquires an interesting stochastic dependence on the position in the plane of the junction. In this situation it is possible to define an average critical current which is determined by the spatial correlations of this function. Due to the inhomogeneity, we find that for finite voltage bias the electromagnetic waves propagating in the junction display a broad spectrum of wavelengths. This is at variance with the situation encountered in homogeneous junctions. The amplitude of these modes is found to decrease as the bias is increased. We predict that the presence of these excitations is directly related to a remarkable feature in the current-voltage characteristic. The dependence of the position and the magnitude of this feature on the vortex concentration has been determined. copyright 1997 The American Physical Society

  1. Numerical versus analytical Ic(H) patterns in Josephson junctions with periodically alternating critical current density

    International Nuclear Information System (INIS)

    Lazarides, N

    2004-01-01

    An analytical expression for the magnetic-field-dependent critical current I c (H) of Josephson junctions with periodically alternating critical current density J c (x) is derived within the uniform field approximation. Comparison with numerically calculated I c (H) patterns for junctions with identical, thick, periodically arranged defects with the corresponding analytical expression reveals fair agreement for a wide range of parameters, due to increased characteristic length. Based on qualitative arguments, we give the dependence of the new characteristic length on the geometrical parameters of the junction, which is in agreement with self-consistent calculations with the static sine-Gordon equation. The analytical expression captures the observed qualitative features of the I c (H) patterns, while it is practically exact for short junctions or high fields. It also produces the shift of the major peak from the zero-field position of the standard Fraunhofer pattern to another position related to the periodicity of the critical current density in φ-junctions

  2. Critical Josephson current in a model Pb/YBa2Cu3O7-δ junction

    International Nuclear Information System (INIS)

    Atkinson, W.A.; Carbotte, J.P.

    1995-01-01

    We consider a simple model for a c-axis Pb/YBa 2 Cu 3 O 7-δ Josephson junction. The observation of a nonzero current in such a junction by Sun et al. [Phys. Rev. Lett. 72, 2267 (1994)] has been taken as evidence against d-wave superconductivity in YBa 2 Cu 3 O 7-δ . We suggest, however, that the pairing interaction in the CuO 2 planes may well be d wave but that the CuO chains destroy the tetragonal symmetry of the system. We examine two ways in which this happens. In a simple model of an incoherent junction, the chains distort the superconducting condensate away from d x 2 -y 2 symmetry. In a specular junction the chains destroy the tetragonal symmetry of the tunneling matrix element. In either case, the loss of tetragonal symmetry results in a finite Josephson current. Our calculated values of the critical current for specular junctions are in good agreement with the results of Sun and co-workers

  3. Room-temperature current blockade in atomically defined single-cluster junctions

    Science.gov (United States)

    Lovat, Giacomo; Choi, Bonnie; Paley, Daniel W.; Steigerwald, Michael L.; Venkataraman, Latha; Roy, Xavier

    2017-11-01

    Fabricating nanoscopic devices capable of manipulating and processing single units of charge is an essential step towards creating functional devices where quantum effects dominate transport characteristics. The archetypal single-electron transistor comprises a small conducting or semiconducting island separated from two metallic reservoirs by insulating barriers. By enabling the transfer of a well-defined number of charge carriers between the island and the reservoirs, such a device may enable discrete single-electron operations. Here, we describe a single-molecule junction comprising a redox-active, atomically precise cobalt chalcogenide cluster wired between two nanoscopic electrodes. We observe current blockade at room temperature in thousands of single-cluster junctions. Below a threshold voltage, charge transfer across the junction is suppressed. The device is turned on when the temporary occupation of the core states by a transiting carrier is energetically enabled, resulting in a sequential tunnelling process and an increase in current by a factor of ∼600. We perform in situ and ex situ cyclic voltammetry as well as density functional theory calculations to unveil a two-step process mediated by an orbital localized on the core of the cluster in which charge carriers reside before tunnelling to the collector reservoir. As the bias window of the junction is opened wide enough to include one of the cluster frontier orbitals, the current blockade is lifted and charge carriers can tunnel sequentially across the junction.

  4. Fluctuations of the peak current of tunnel diodes in multi-junction solar cells

    International Nuclear Information System (INIS)

    Jandieri, K; Baranovskii, S D; Stolz, W; Gebhard, F; Guter, W; Hermle, M; Bett, A W

    2009-01-01

    Interband tunnel diodes are widely used to electrically interconnect the individual subcells in multi-junction solar cells. Tunnel diodes have to operate at high current densities and low voltages, especially when used in concentrator solar cells. They represent one of the most critical elements of multi-junction solar cells and the fluctuations of the peak current in the diodes have an essential impact on the performance and reliability of the devices. Recently we have found that GaAs tunnel diodes exhibit extremely high peak currents that can be explained by resonant tunnelling through defects homogeneously distributed in the junction. Experiments evidence rather large fluctuations of the peak current in the diodes fabricated from the same wafer. It is a challenging task to clarify the reason for such large fluctuations in order to improve the performance of the multi-junction solar cells. In this work we show that the large fluctuations of the peak current in tunnel diodes can be caused by relatively small fluctuations of the dopant concentration. We also show that the fluctuations of the peak current become smaller for deeper energy levels of the defects responsible for the resonant tunnelling.

  5. Thermoelectric-induced spin currents in single-molecule magnet tunnel junctions

    Science.gov (United States)

    Zhang, Zhengzhong; Jiang, Liang; Wang, Ruiqiang; Wang, Baigeng; Xing, D. Y.

    2010-12-01

    A molecular spin-current generator is proposed, which consists of a single-molecule magnet (SMM) coupled to two normal metal electrodes with temperature gradient. It is shown that this tunneling junction can generate a highly spin-polarized current by thermoelectric effects, whose flowing direction and spin polarization can be changed by adjusting the gate voltage applied to the SMM. This device can be realized with current technologies and may have practical use in spintronics and quantum information.

  6. All-electric-controlled spin current switching in single-molecule magnet-tunnel junctions

    Science.gov (United States)

    Zhang, Zheng-Zhong; Shen, Rui; Sheng, Li; Wang, Rui-Qiang; Wang, Bai-Gen; Xing, Ding-Yu

    2011-04-01

    A single-molecule magnet (SMM) coupled to two normal metallic electrodes can both switch spin-up and spin-down electronic currents within two different windows of SMM gate voltage. Such spin current switching in the SMM tunnel junction arises from spin-selected single electron resonant tunneling via the lowest unoccupied molecular orbit of the SMM. Since it is not magnetically controlled but all-electrically controlled, the proposed spin current switching effect may have potential applications in future spintronics.

  7. Transcranial direct current stimulation of the right temporoparietal junction impairs third-person perspective taking

    NARCIS (Netherlands)

    van Elk, M.; Duizer, M.; Sligte, I.; van Schie, H.

    Given the current debates about the precise functional role of the right temporoparietal junction (rTPJ) in egocentric and exocentric perspective taking, in the present study we manipulated activity in the rTPJ to investigate the effects on a spatial perspective-taking task. Participants engaged in

  8. Asymmetric current-phase relation due to spin-orbit interaction in semiconductor nanowire Josephson junction

    NARCIS (Netherlands)

    Yokoyama, T.; Eto, M.; Nazarov, Y.V.

    2012-01-01

    We theoretically study the current-phase relation in semiconductor nanowire Josephson junction in the presence of spin-orbit interaction. In the nanowire, the impurity scattering with strong SO interaction is taken into account using the random matrix theory. In the absence of magnetic field, the

  9. Nonmonotonic temperature dependence of critical current in diffusive d-wave junctions

    NARCIS (Netherlands)

    Yokoyama, T.; Tanaka, Y.; Golubov, Alexandre Avraamovitch; Asano, Y.

    2006-01-01

    We study the Josephson effect in D/I/DN/I/D junctions, where I, DN, and D denote an insulator, a diffusive normal metal, and a d-wave superconductor, respectively. The Josephson current is calculated based on the quasiclassical Green's function theory with a general boundary condition for

  10. Current relevance of cervical ultrasonography in staging cancer of the esophagus and gastroesophageal junction

    NARCIS (Netherlands)

    Schreurs, Liesbeth; Verhoef, C.C.; van der Jagt, E.J.; van Dam, G.M.; Groen, H.; Plukker, J.T.

    Purpose: To evaluate the value of external ultrasonography (US) of the neck in current dedicated preoperative staging of patients with cancer of the esophagus and gastroesophageal junction (GEJ). Materials and methods: We analyzed 180 consecutive patients (154 men, 26 women, and mean age 63 (38-84)

  11. Current-induced forces: a new mechanism to induce negative differential resistance and current-switching effect in molecular junctions

    Science.gov (United States)

    Gu, Lei; Fu, Hua-Hua

    2015-12-01

    Current-induced forces can excite molecules, polymers and other low-dimensional materials, which in turn leads to an effective gate voltage through Holstein interaction. Here, by taking a short asymmetric DNA junction as an example, and using the Langevin approach, we find that when suppression of charge transport by the effective gate voltage surpasses the current increase from an elevated voltage bias, the current-voltage (I-V) curves display strong negative differential resistance (NDR) and perfect current-switching characteristics. The asymmetric DNA chain differs in mechanical stability under inverse voltages and the I-V curve is asymmetric about inverse biases, which can be used to understand recent transport experiments on DNA chains, and meanwhile provides a new strategy to realize NDR in molecular junctions and other low-dimensional quantum systems.

  12. Current-induced forces: a new mechanism to induce negative differential resistance and current-switching effect in molecular junctions

    International Nuclear Information System (INIS)

    Gu, Lei; Fu, Hua-Hua

    2015-01-01

    Current-induced forces can excite molecules, polymers and other low-dimensional materials, which in turn leads to an effective gate voltage through Holstein interaction. Here, by taking a short asymmetric DNA junction as an example, and using the Langevin approach, we find that when suppression of charge transport by the effective gate voltage surpasses the current increase from an elevated voltage bias, the current-voltage (I–V) curves display strong negative differential resistance (NDR) and perfect current-switching characteristics. The asymmetric DNA chain differs in mechanical stability under inverse voltages and the I–V curve is asymmetric about inverse biases, which can be used to understand recent transport experiments on DNA chains, and meanwhile provides a new strategy to realize NDR in molecular junctions and other low-dimensional quantum systems. (paper)

  13. The critical current density of an SNS Josephson-junction in high magnetic fields

    International Nuclear Information System (INIS)

    Carty, George J; Hampshire, Damian P

    2013-01-01

    Although the functional form of the critical current density (J c ) of superconducting–normal–superconducting (SNS) Josephson-junctions (J-Js) has long been known in the very low field limit (e.g. the sinc function), includes the local properties of the junction and has been confirmed experimentally in many systems, there have been no such general solutions available for high fields. Here, we derive general analytic equations for J c in zero field and in high fields across SNS J-Js for arbitrary resistivity of the superconductor and the normal layer which are consistent with the literature results available in limiting cases. We confirm the validity of the approach using both computational solutions to time-dependent Ginzburg–Landau (TDGL) theory applied to SNS junctions and experimental J c data for an SNS PbBi–Cd–PbBi junction. We suggest that since SNS junctions can be considered the basic building blocks for the description of the grain boundaries of polycrystalline materials because they both provide flux-flow channels, this work may provide a mathematical framework for high J c technological polycrystalline superconductors in high magnetic fields. (paper)

  14. Rectified tunneling current response of bio-functionalized metal-bridge-metal junctions.

    Science.gov (United States)

    Liu, Yaqing; Offenhäusser, Andreas; Mayer, Dirk

    2010-01-15

    Biomolecular bridged nanostructures allow direct electrical addressing of electroactive biomolecules, which is of interest for the development of bioelectronic and biosensing hybrid junctions. In the present paper, the electroactive biomolecule microperoxidase-11 (MP-11) was integrated into metal-bridge-metal (MBM) junctions assembled from a scanning tunneling microscope (STM) setup. Before immobilization of MP-11, the Au working electrode was first modified by a self-assembled monolayer of 1-undecanethiol (UDT). A symmetric and potential independent response of current-bias voltage (I(t)/V(b)) was observed for the Au (substrate)/UDT/Au (tip) junction. However, the I(t)/V(b) characteristics became potential dependent and asymmetrical after binding of MP-11 between the electrodes of the junction. The rectification ratio of the asymmetric current response varies with gate electrode modulation. A resonant tunneling process between metal electrode and MP-11 enhances the tunneling current and is responsible for the observed rectification. Our investigations demonstrated that functional building blocks of proteins can be reassembled into new conceptual devices with operation modes deviating from their native function, which could prove highly useful in the design of future biosensors and bioelectronic devices. Copyright 2009 Elsevier B.V. All rights reserved.

  15. Critical current anomaly at the topological quantum phase transition in a Majorana Josephson junction

    Energy Technology Data Exchange (ETDEWEB)

    Huang, Hong [School of Physics, Sun Yat-sen University, Guangzhou 510275 (China); Liang, Qi-Feng [Department of Physics, Shaoxing University, Shaoxing 312000 (China); Yao, Dao-Xin, E-mail: yaodaox@mail.sysu.edu.cn [School of Physics, Sun Yat-sen University, Guangzhou 510275 (China); Wang, Zhi, E-mail: physicswangzhi@gmail.com [School of Physics, Sun Yat-sen University, Guangzhou 510275 (China)

    2017-06-28

    Majorana bound states in topological Josephson junctions induce a 4π period current-phase relation. Direct detection of the 4π periodicity is complicated by the quasiparticle poisoning. We reveal that Majorana bound states are also signaled by the anomalous enhancement on the critical current of the junction. We show the landscape of the critical current for a nanowire Josephson junction under a varying Zeeman field, and reveal a sharp step feature at the topological quantum phase transition point, which comes from the anomalous enhancement of the critical current at the topological regime. In multi-band wires, the anomalous enhancement disappears for an even number of bands, where the Majorana bound states fuse into Andreev bound states. This anomalous critical current enhancement directly signals the existence of the Majorana bound states, and also provides a valid signature for the topological quantum phase transition. - Highlights: • We introduce the critical current step as a signal for the topological quantum phase transition. • We study the quantum phase transition in the topological nanowire under a rotating Zeeman field. • We show that the critical current anomaly gradually disappears for systems with more sub-bands.

  16. Scaling for quantum tunneling current in nano- and subnano-scale plasmonic junctions.

    Science.gov (United States)

    Zhang, Peng

    2015-05-19

    When two conductors are separated by a sufficiently thin insulator, electrical current can flow between them by quantum tunneling. This paper presents a self-consistent model of tunneling current in a nano- and subnano-meter metal-insulator-metal plasmonic junction, by including the effects of space charge and exchange correlation potential. It is found that the J-V curve of the junction may be divided into three regimes: direct tunneling, field emission, and space-charge-limited regime. In general, the space charge inside the insulator reduces current transfer across the junction, whereas the exchange-correlation potential promotes current transfer. It is shown that these effects may modify the current density by orders of magnitude from the widely used Simmons' formula, which is only accurate for a limited parameter space (insulator thickness > 1 nm and barrier height > 3 eV) in the direct tunneling regime. The proposed self-consistent model may provide a more accurate evaluation of the tunneling current in the other regimes. The effects of anode emission and material properties (i.e. work function of the electrodes, electron affinity and permittivity of the insulator) are examined in detail in various regimes. Our simple model and the general scaling for tunneling current may provide insights to new regimes of quantum plasmonics.

  17. Magnetic field oscillations of the critical current in long ballistic graphene Josephson junctions

    Science.gov (United States)

    Rakyta, Péter; Kormányos, Andor; Cserti, József

    2016-06-01

    We study the Josephson current in long ballistic superconductor-monolayer graphene-superconductor junctions. As a first step, we have developed an efficient computational approach to calculate the Josephson current in tight-binding systems. This approach can be particularly useful in the long-junction limit, which has hitherto attracted less theoretical interest but has recently become experimentally relevant. We use this computational approach to study the dependence of the critical current on the junction geometry, doping level, and an applied perpendicular magnetic field B . In zero magnetic field we find a good qualitative agreement with the recent experiment of M. Ben Shalom et al. [Nat. Phys. 12, 318 (2016), 10.1038/nphys3592] for the length dependence of the critical current. For highly doped samples our numerical calculations show a broad agreement with the results of the quasiclassical formalism. In this case the critical current exhibits Fraunhofer-like oscillations as a function of B . However, for lower doping levels, where the cyclotron orbit becomes comparable to the characteristic geometrical length scales of the system, deviations from the results of the quasiclassical formalism appear. We argue that due to the exceptional tunability and long mean free path of graphene systems a new regime can be explored where geometrical and dynamical effects are equally important to understand the magnetic field dependence of the critical current.

  18. Current-driven thermo-magnetic switching in magnetic tunnel junctions

    Science.gov (United States)

    Kravets, A. F.; Polishchuk, D. M.; Pashchenko, V. A.; Tovstolytkin, A. I.; Korenivski, V.

    2017-12-01

    We investigate switching of magnetic tunnel junctions (MTJs) driven by the thermal effect of the transport current through the junctions. The switching occurs in a specially designed composite free layer, which acts as one of the MTJ electrodes, and is due to a current-driven ferro-to-paramagnetic Curie transition with the associated exchange decoupling within the free layer leading to magnetic reversal. We simulate the current and heat propagation through the device and show how heat focusing can be used to improve the power efficiency. The Curie-switch MTJ demonstrated in this work has the advantage of being highly tunable in terms of its operating temperature range, conveniently to or just above room temperature, which can be of technological significance and competitive with the known switching methods using spin-transfer torques.

  19. Axial p-n junction and space charge limited current in single GaN nanowire

    Science.gov (United States)

    Fang, Zhihua; Donatini, Fabrice; Daudin, Bruno; Pernot, Julien

    2018-01-01

    The electrical characterizations of individual basic GaN nanostructures, such as axial nanowire (NW) p-n junctions, are becoming indispensable and crucial for the fully controlled realization of GaN NW based devices. In this study, electron beam induced current (EBIC) measurements were performed on two single axial GaN p-n junction NWs grown by plasma-assisted molecular beam epitaxy. I-V characteristics revealed that both ohmic and space charge limited current (SCLC) regimes occur in GaN p-n junction NW. Thanks to an improved contact process, both the electric field induced by the p-n junction and the SCLC in the p-part of GaN NW were disclosed and delineated by EBIC signals under different biases. Analyzing the EBIC profiles in the vicinity of the p-n junction under 0 V and reverse bias, we deduced a depletion width in the range of 116-125 nm. Following our previous work, the acceptor N a doping level was estimated to be 2-3 × 1017 at cm-3 assuming a donor level N d of 2-3 × 1018 at cm-3. The hole diffusion length in n-GaN was determined to be 75 nm for NW #1 and 43 nm for NW #2, demonstrating a low surface recombination velocity at the m-plane facet of n-GaN NW. Under forward bias, EBIC imaging visualized the electric field induced by the SCLC close to p-side contact, in agreement with unusual SCLC previously reported in GaN NWs.

  20. Axial p-n junction and space charge limited current in single GaN nanowire.

    Science.gov (United States)

    Fang, Zhihua; Donatini, Fabrice; Daudin, Bruno; Pernot, Julien

    2018-01-05

    The electrical characterizations of individual basic GaN nanostructures, such as axial nanowire (NW) p-n junctions, are becoming indispensable and crucial for the fully controlled realization of GaN NW based devices. In this study, electron beam induced current (EBIC) measurements were performed on two single axial GaN p-n junction NWs grown by plasma-assisted molecular beam epitaxy. I-V characteristics revealed that both ohmic and space charge limited current (SCLC) regimes occur in GaN p-n junction NW. Thanks to an improved contact process, both the electric field induced by the p-n junction and the SCLC in the p-part of GaN NW were disclosed and delineated by EBIC signals under different biases. Analyzing the EBIC profiles in the vicinity of the p-n junction under 0 V and reverse bias, we deduced a depletion width in the range of 116-125 nm. Following our previous work, the acceptor N a doping level was estimated to be 2-3 × 10 17 at cm -3 assuming a donor level N d of 2-3 × 10 18 at cm -3 . The hole diffusion length in n-GaN was determined to be 75 nm for NW #1 and 43 nm for NW #2, demonstrating a low surface recombination velocity at the m-plane facet of n-GaN NW. Under forward bias, EBIC imaging visualized the electric field induced by the SCLC close to p-side contact, in agreement with unusual SCLC previously reported in GaN NWs.

  1. Optimized electrode configuration for current-in-plane characterization of magnetic tunnel junction stacks

    DEFF Research Database (Denmark)

    Cagliani, Alberto; Kjær, Daniel; Østerberg, Frederik Westergaard

    2017-01-01

    The current-in-plane tunneling technique (CIPT) has been a crucial tool in the development of magnetic tunnel junction stacks suitable for magnetic random access memories (MRAM) for more than a decade. The MRAM development has now reached the maturity to make the transition from the R&D phase...... of electrodes on a multi-electrode probe to reach up to 36% improvement on the repeatability for the resistance area product and the tunneling magnetoresistance measurement, without any hardware modification....

  2. Mesoscopic fluctuations in the critical current in InAs-coupled Josephson junctions

    International Nuclear Information System (INIS)

    Takayanagi, Hideaki; Hansen, J.B.; Nitta, Junsaku

    1994-01-01

    Mesoscopic fluctuations were confirmed for the critical current in a p-type InAs-coupled Josephson junction. The critical current was measured as a function of the gate voltage corresponding to the change in the Fermi energy. The critical current showed a mesoscopic fluctuation and its behavior was the same as that of the conductance measured at the same time in both the weak and strong localization regimes. The magnitude and the typical period of the fluctuation are discussed and compared to theoretical predictions. ((orig.))

  3. Phase dynamics of a Josephson junction ladder driven by modulated currents

    International Nuclear Information System (INIS)

    Kawaguchi, T.

    2011-01-01

    Phase dynamics of disordered Josephson junction ladders (JJLs) driven by external currents which are spatially and temporally modulated is studied using a numerical simulation based on a random field XY model. This model is considered theoretically as an effective model of JJLs with structural disorder in a magnetic field. The spatiotemporal modulation of external currents causes peculiar dynamical effects of phases in the system under certain conditions, such as the directed motion of phases and the mode-locking in the absence of dc currents. We clarify the details of effects of the spatiotemporal modulation on the phase dynamics.

  4. Rectification of Current Responds to Incorporation of Fullerenes into Mixed-Monolayers of Alkanethiolates in Tunneling Junctions

    NARCIS (Netherlands)

    Qiu, Li; Zhang, Yanxi; Krijger, Theodorus; Qiu, Xinkai; van 't Hof, Patrick; Hummelen, Jan; Chiechi, Ryan

    2016-01-01

    This paper describes the rectification of current through molecular junctions comprising self-assembled monolayers of decanethiolate through the incorporation of C60 fullerene moieties bearing undecanethiol groups in junctions using eutectic Ga–In (EGaIn) and Au conducting probe AFM (CP-AFM)

  5. Effect of parallel transport currents on the d-wave Josephson junction

    International Nuclear Information System (INIS)

    Rashedi, Gholamreza

    2009-01-01

    In this paper, the non-local mixing of coherent current states in d-wave superconducting banks is investigated. The superconducting banks are connected via a ballistic point contact. The banks have mis-orientation and phase difference. Furthermore, they are subjected to a tangential transport current along the ab plane of d-wave crystals and parallel to the interface between the superconductors. The effects of mis-orientation and external transport current on the current-phase relations and current distributions are the subjects of this paper. It is observed that, at values of phase difference close to 0, π and 2π, the current distribution may have a vortex-like form in the vicinity of the point contact. The current distribution of the above-mentioned junction between d-wave superconductors is totally different from the junction between s-wave superconductors. The interesting result which this study shows is that spontaneous and Josephson currents are observed for the case of φ = 0.

  6. Effect of exciton pairing on the stationary Josephson current in superconductor-semimetal-superconductor junctions

    International Nuclear Information System (INIS)

    Itskovich, I.F.; Shekhter, R.I.

    1983-01-01

    The effect of exciton pairing of charge carriers in a semimetal on the stationary Josephson current in superconductor-semimetal-superconductor junctions is considered. It is shown that the phase transition of the semimetal interlayer into an exciton dielectric state for T/sub γ/< T/sub c/ (T/sub γ/, T/sub c/ are the superconducting and exciton transition temperatures, respectively) is accompanied by a kink on the critical current j/sub c/ versus temperature curve at the point T = T/sub γ/. A sharp nonmonotonic temperature dependence of the reduced current j/sub c//j/sub c/0 (j/sub c/0 is the critical current at T/sub γ/ = 0) is also possible in the range T< T/sub γ/. At low temperatures T<< v/sub 1,2//d<< T/sub γ/ (v/sub 1,2/ are the Fermi velocities of the carriers in the semimetal, d is the thickness of the interlayer) the critical current of the superconductor-semimetal-superconductor junction is exponentially smaller than the current in the absence of exciton pairing

  7. Asymmetric current-phase relation due to spin-orbit interaction in semiconductor nanowire Josephson junction

    Energy Technology Data Exchange (ETDEWEB)

    Yokoyama, Tomohiro; Eto, Mikio [Faculty of Science and Technology, Keio University, 3-14-1 Hiyoshi, Kohoku-ku, Yokohama 223-8522 (Japan); Nazarov, Yuli V. [Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1, 2628 CJ Delft, The Netherlands (Netherlands)

    2013-12-04

    We theoretically study the current-phase relation in semiconductor nanowire Josephson junction in the presence of spin-orbit interaction. In the nanowire, the impurity scattering with strong SO interaction is taken into account using the random matrix theory. In the absence of magnetic field, the Josephson current I and phase difference φ between the superconductors satisfy the relation of I(φ) = –I(–φ). In the presence of magnetic field along the nanowire, the interplay between the SO interaction and Zeeman effect breaks the current-phase relation of I(φ) = –I(–φ). In this case, we show that the critical current depends on the current direction, which qualitatively agrees with recent experimental findings.

  8. Analogue Between Dynamic Hamiltonian-Operators of a Mesoscopic Ring Carrying Persistent Current and a Josephson Junction

    International Nuclear Information System (INIS)

    Fan Hongyi; Wang Jisuo

    2006-01-01

    By making the analogy between the operator Hamiltonians of a mesoscopic ring carrying the persistent current and a Josephson junction we have introduced a phase operator and entangled state representation to establish a theoretical formalism for the ring system.

  9. IR Camera Validation of IGBT Junction Temperature Measurement via Peak Gate Current

    DEFF Research Database (Denmark)

    Baker, Nick; Dupont, Laurent; Munk-Nielsen, Stig

    2017-01-01

    partial bond-wire lift-off. Results are also compared with a traditional electrical temperature measurement method: the voltage drop under low current (VCE(low)). In all cases, the IGPeak method is found to provide a temperature slightly overestimating the temperature of the gate pad. Consequently, both...... the gate pad position and chip temperature distribution influence whether the measurement is representative of the mean junction temperature. These results remain consistent after chips are degraded through bondwire lift-off. In a paralleled IGBT configuration with non-negligible temperature disequilibrium...

  10. Influence of the current-phase relation on the critical-current-applied-magnetic-flux dependence in parallel-connected Josephson junctions

    International Nuclear Information System (INIS)

    Tsang, W.; Van Duzer, T.

    1976-01-01

    The form of the current-phase relations for the Josephson junctions is shown to have a significant influence on the relation I/sub c/(theta/sub a/) between critical current and applied flux for two junctions connected in parallel in a superconducting circuit. The observed one-flux-quantum periodicity and inversion symmetry of the I/sub c/(theta/sub a/) relation are shown to result from the fact that the current-phase, i-phi, relations of the junctions satisfy i (phi+2mπ) =i (phi) and i (-phi) =-i (phi), respectively. It is also shown that if the current-phase relations for the two junctions are different, an asymmetry appears in the I/sub c/(theta/sub a/)

  11. Chaotic Dynamics of a Josephson Junction with a Ratchet Potential and Current-Modulating Damping

    Science.gov (United States)

    Li, Fei; Li, Wenwu; Xu, Lan

    2018-04-01

    The chaotic dynamics of a Josephson junction with a ratchet potential and current-modulating damping are studied. Under the first-order approximation, we construct the general solution of the first-order equation whose boundedness condition contains the famous Melnikov chaotic criterion. Based on the general solution, the incomputability and unpredictability of the system's chaotic behavior are discussed. For the case beyond perturbation conditions, the evolution of stroboscopic Poincaré sections shows that the system undergoes a quasi-periodic transition to chaos with an increasing intensity of the rf-current. Through a suitable feedback controlling strategy, the chaos can be effectively suppressed and the intensity of the controller can vary in a large range. It is also found that the current between the two separated superconductors increases monotonously in some specific parameter spaces.

  12. Time-evolution of photon heat current through series coupled two mesoscopic Josephson junction devices

    Science.gov (United States)

    Lu, Wen-Ting; Zhao, Hong-Kang; Wang, Jian

    2018-03-01

    Photon heat current tunneling through a series coupled two mesoscopic Josephson junction (MJJ) system biased by dc voltages has been investigated by employing the nonequilibrium Green’s function approach. The time-oscillating photon heat current is contributed by the superposition of different current branches associated with the frequencies of MJJs ω j (j = 1, 2). Nonlinear behaviors are exhibited to be induced by the self-inductance, Coulomb interaction, and interference effect relating to the coherent transport of Cooper pairs in the MJJs. Time-oscillating pumping photon heat current is generated in the absence of temperature difference, while it becomes zero after time-average. The combination of ω j and Coulomb interactions in the MJJs determines the concrete heat current configuration. As the external and intrinsic frequencies ω j and ω 0 of MJJs match some specific combinations, resonant photon heat current exhibits sinusoidal behaviors with large amplitudes. Symmetric and asymmetric evolutions versus time t with respect to ω 1 t and ω 2 t are controlled by the applied dc voltages of V 1 and V 2. The dc photon heat current formula is a special case of the general time-dependent heat current formula when the bias voltages are settled to zero. The Aharonov-Bohm effect has been investigated, and versatile oscillation structures of photon heat current can be achieved by tuning the magnetic fluxes threading through separating MJJs.

  13. Evaluation of the Electronic Structure of Single-Molecule Junctions Based on Current-Voltage and Thermopower Measurements: Application to C60 Single-Molecule Junction.

    Science.gov (United States)

    Komoto, Yuki; Isshiki, Yuji; Fujii, Shintaro; Nishino, Tomoaki; Kiguchi, Manabu

    2017-02-16

    The electronic structure of molecular junctions has a significant impact on their transport properties. Despite the decisive role of the electronic structure, a complete characterization of the electronic structure remains a challenge. This is because there is no straightforward way of measuring electron spectroscopy for an individual molecule trapped in a nanoscale gap between two metal electrodes. Herein, a comprehensive approach to obtain a detailed description of the electronic structure in single-molecule junctions based on the analysis of current-voltage (I-V) and thermoelectric characteristics is described. It is shown that the electronic structure of the prototypical C 60 single-molecule junction can be resolved by analyzing complementary results of the I-V and thermoelectric measurement. This combined approach confirmed that the C 60 single-molecule junction was highly conductive with molecular electronic conductances of 0.033 and 0.003 G 0 and a molecular Seebeck coefficient of -12 μV K -1 . In addition, we revealed that charge transport was mediated by a LUMO whose energy level was located 0.5≈0.6 eV above the Fermi level of the Au electrode. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  14. Interfacial spin-orbit splitting and current-driven spin torque in anisotropic tunnel junctions

    KAUST Repository

    Manchon, Aurelien

    2011-05-17

    Spin transport in magnetic tunnel junctions comprising a single magnetic layer in the presence of interfacial spin-orbit interaction (SOI) is investigated theoretically. Due to the presence of interfacial SOI, a current-driven spin torque can be generated at the second order in SOI, even in the absence of an external spin polarizer. This torque possesses two components, one in plane and one perpendicular to the plane of rotation, that can induce either current-driven magnetization switching from an in-plane to out-of-plane configuration or magnetization precessions, similar to spin transfer torque in spin valves. Consequently, it appears that it is possible to control the magnetization steady state and dynamics by either varying the bias voltage or electrically modifying the SOI at the interface.

  15. Influence of coupling parameter on current-voltage characteristics of intrinsic Josephson junctions in high-T c superconductors

    International Nuclear Information System (INIS)

    Shukrinov, Yu.M.; Mahfouzi, F.

    2006-01-01

    We study the current-voltage characteristics of intrinsic Josephson junctions in high-T c superconductors by numerical calculations and in framework of capacitively coupled Josephson junctions model we obtain the total number of branches. The influence of the coupling parameter α on the current-voltage characteristics at fixed parameter β (β 2 1/β c , where β c is McCumber parameter) and the influence of α on β-dependence of the current-voltage characteristics are investigated. We obtain the α-dependence of the branch's slopes and branch's endpoints. The presented results show new features of the coupling effect on the scheme of hysteresis jumps in current-voltage characteristics of intrinsic Josephson junctions in high-T c superconductors

  16. Analytical description of ballistic spin currents and torques in magnetic tunnel junctions

    KAUST Repository

    Chshiev, M.

    2015-09-21

    In this work we demonstrate explicit analytical expressions for both charge and spin currents which constitute the 2×2 spinor in magnetic tunnel junctions with noncollinear magnetizations under applied voltage. The calculations have been performed within the free electron model in the framework of the Keldysh formalism and WKB approximation. We demonstrate that spin/charge currents and spin transfer torques are all explicitly expressed through only three irreducible quantities, without further approximations. The conditions and mechanisms of deviation from the conventional sine angular dependence of both spin currents and torques are shown and discussed. It is shown in the thick barrier approximation that all tunneling transport quantities can be expressed in an extremely simplified form via Slonczewski spin polarizations and our effective spin averaged interfacial transmission probabilities and effective out-of-plane polarizations at both interfaces. It is proven that the latter plays a key role in the emergence of perpendicular spin torque as well as in the angular dependence character of all spin and charge transport considered. It is demonstrated directly also that for any applied voltage, the parallel component of spin current at the FM/I interface is expressed via collinear longitudinal spin current components. Finally, spin transfer torque behavior is analyzed in a view of transverse characteristic length scales for spin transport.

  17. Current-induced spin transfer torque in ferromagnet-marginal Fermi liquid double tunnel junctions

    International Nuclear Information System (INIS)

    Mu Haifeng; Zheng Qingrong; Jin Biao; Su Gang

    2005-01-01

    Current-induced spin transfer torque through a marginal Fermi liquid (MFL) which is connected to two noncollinearly aligned ferromagnets via tunnel junctions is discussed in terms of the nonequilibrium Green function method. It is found that in the absence of the spin-flip scattering, the magnitude of the torque increases with the polarization and the coupling constant λ of the MFL, whose maximum increases with λ linearly, showing that the interactions between electrons tend to enhance the spin torque. When the spin-flip scattering is included, an additional spin torque is induced. It is found that the spin-flip scattering enhances the spin torque and gives rise to a nonlinear angular shift

  18. Voltage-driven versus current-driven spin torque in anisotropic tunneling junctions

    KAUST Repository

    Manchon, Aurelien

    2011-01-01

    Nonequilibrium spin transport in a magnetic tunnel junction comprising a single magnetic layer in the presence of interfacial spin-orbit interaction (SOI) is studied theoretically. The interfacial SOI generates a spin torque of the form T=T∥ M×(z× M)+T⊥ z× M, even in the absence of an external spin polarizer. For thick and large tunnel barriers, the torque reduces to the perpendicular component T⊥, which can be electrically tuned by applying a voltage across the insulator. In the limit of thin and low tunnel barriers, the in-plane torque T∥ emerges, proportional to the tunneling current density. Experimental implications on magnetic devices are discussed. © 2011 IEEE.

  19. Voltage-driven versus current-driven spin torque in anisotropic tunneling junctions

    KAUST Repository

    Manchon, Aurelien

    2011-10-01

    Nonequilibrium spin transport in a magnetic tunnel junction comprising a single magnetic layer in the presence of interfacial spin-orbit interaction (SOI) is studied theoretically. The interfacial SOI generates a spin torque of the form T=T∥ M×(z× M)+T⊥ z× M, even in the absence of an external spin polarizer. For thick and large tunnel barriers, the torque reduces to the perpendicular component T⊥, which can be electrically tuned by applying a voltage across the insulator. In the limit of thin and low tunnel barriers, the in-plane torque T∥ emerges, proportional to the tunneling current density. Experimental implications on magnetic devices are discussed. © 2011 IEEE.

  20. Proximity effects and Josephson currents in ferromagnet. Spin-triplet superconductors junctions

    International Nuclear Information System (INIS)

    Terrade, Damien

    2015-01-01

    Spin-triplet superconductivity, first attached to the description of 3 He, is now generally considered to also occur in heavy-fermions compounds and in perovskite ruthenium oxide Sr 2 RuO 4 . The latter material is especially interesting since many experiments show strong evidences for a unitary chiral spin-triplet state. Moreover, the recent fabrication of thin heterostructures made of ferromagnetic SrRuO 3 on the top of Sr 2 RuO 4 strongly encourages new theoretical studies on the interplay between spin-triplet superconductor and ferromagnet in similar fashion to spin-singlet superconductors. Using an extended tight-binding Hamiltonian to model the superconductor, we discuss in this thesis the specific proximity effects of such interface by solving self-consistently the Bogoliubov-De Gennes equations on two- and three-dimensional lattices in the ballistic limit. We obtain the spatial profile of the superconducting order parameters at the interface as well as the spin-polarisation and the current across the Josephson junctions. In contrast to heterostructures made of spin-singlet superconductor, we show that the physical properties at the interface are not only controlled by the strength of the magnetization inside the ferromagnet but also by its orientation due to the existence of a finite pair spin projection of the spin-triplet Cooper pairs. We analyse in the first part the spin-polarisation and the Gibbs free energy at the three-dimensional ferromagnet-chiral spin-triplet superconductor interface. Then, the second part of the thesis is dedicated to the study of the Josephson junctions made of a chiral spin-triplet superconductor and a ferromagnetic barrier. More precisely, we analyse the existence of 0-π state transitions in two- and three-dimensional junctions with respect to the strength and the orientation of the magnetization. Finally, we study the proximity effects at the interface of helical spin-triplet superconductors. They differ from the chiral

  1. Colossal X-Ray-Induced Persistent Photoconductivity in Current-Perpendicular-to-Plane Ferroelectric/Semiconductor Junctions

    KAUST Repository

    Hu, Weijin; Paudel, Tula R.; Lopatin, Sergei; Wang, Zhihong; Ma, He; Wu, Kewei; Bera, Ashok; Yuan, Guoliang; Gruverman, Alexei; Tsymbal, Evgeny Y.; Wu, Tao

    2017-01-01

    . So far, PPC has been observed in bulk materials and thin-film structures, where the current flows in the plane, limiting the magnitude of the effect. Here using epitaxial Nb:SrTiO3/Sm0.1Bi0.9FeO3/Pt junctions with a current-perpendicular-to-plane

  2. Current amplifier and flux-buffer designs using an exponential flux shuttle with a Josephson junction synthetic inductor

    International Nuclear Information System (INIS)

    Gershenson, M.

    1989-01-01

    A current amplifier design based on the principle of fluxon propagation in a multi-junction Exponential Flux Shuttle has been investigated. In this design, the critical current of the junction is increased exponentially and the SQUID inductance is a JJ (Josephson Junction) equivalent inductance. Current gain can be achieved by generating fluxons at the low end and dissipating them at the high end where the load is located. Advantages over other types of linear devices are discussed. Two parallel Exponential Flux Shuttles can be used to duplicate flux from a high inductance input coil t a low inductance output. Device performance of the two circuits are evaluated by computer simulation, noise performance is discussed

  3. Influence of surface losses and the self-pumping effect on current-voltage characteristics of a long Josephson junction

    DEFF Research Database (Denmark)

    Pankratov, A.L.; Sobolev, A.S.; Koshelets, V.P.

    2007-01-01

    We have numerically investigated the dynamics of a long linear Josephson tunnel junction with overlap geometry. Biased by a direct current (dc) and an applied dc magnetic field, the junction has important applications as tunable high frequency oscillator [flux-flow oscillator (FFO......) placed at both ends of the FFO. In our model, the damping parameter depends both on the spatial coordinate and on the amplitude of the ac voltage. In order to find the dc current-voltage curves, the damping parameter has to be calculated self-consistently by successive approximations and time integration...

  4. Optimization of superconductor--normal-metal--superconductor Josephson junctions for high critical-current density

    International Nuclear Information System (INIS)

    Golub, A.; Horovitz, B.

    1994-01-01

    The application of superconducting Bi 2 Sr 2 CaCu 2 O 8 and YBa 2 Cu 3 O 7 wires or tapes to electronic devices requires the optimization of the transport properties in Ohmic contacts between the superconductor and the normal metal in the circuit. This paper presents results of tunneling theory in superconductor--normal-metal--superconductor (SNS) junctions, in both pure and dirty limits. We derive expressions for the critical-current density as a function of the normal-metal resistivity in the dirty limit or of the ratio of Fermi velocities and effective masses in the clean limit. In the latter case the critical current increases when the ratio γ of the Fermi velocity in the superconductor to that of the weak link becomes much less than 1 and it also has a local maximum if γ is close to 1. This local maximum is more pronounced if the ratio of effective masses is large. For temperatures well below the critical temperature of the superconductors the model with abrupt pair potential on the SN interfaces is considered and its applicability near the critical temperature is examined

  5. Direct current stimulation of the left temporoparietal junction modulates dynamic humor appreciation.

    Science.gov (United States)

    Slaby, Isabella; Holmes, Amanda; Moran, Joseph M; Eddy, Marianna D; Mahoney, Caroline R; Taylor, Holly A; Brunyé, Tad T

    2015-11-11

    The aim of this study was to evaluate the influence of transcranial direct current stimulation targeting the left temporoparietal junction (TPJ) on humor appreciation during a dynamic video rating task. In a within-participants design, we targeted the left TPJ with anodal, cathodal, or no transcranial direct current stimulation, centered at electrode site C3 using a 4×1 targeted stimulation montage. During stimulation, participants dynamically rated a series of six stand-up comedy videos for perceived humor. We measured event-related (time-locked to crowd laughter) modulation of humor ratings as a function of stimulation condition. Results showed decreases in rated humor during anodal (vs. cathodal or none) stimulation; this pattern was evident for the majority of videos and was only partially predicted by individual differences in humor style. We discuss the possibility that upregulation of neural circuits involved in the theory of mind and empathizing with others may reduce appreciation of aggressive humor. In conclusion, the present data show that neuromodulation of the TPJ can alter the mental processes underlying humor appreciation, suggesting critical involvement of this cortical region in detecting, comprehending, and appreciating humor.

  6. Fully Valley/spin polarized current and Fano factor through the Graphene/ferromagnetic silicene/Graphene junction

    Energy Technology Data Exchange (ETDEWEB)

    Rashidian, Zeinab; Rezaeipour, Saeid [Department of Physics, Faculty of Science, Lorestan University, Lorestan (Iran, Islamic Republic of); Hajati, Yaser [Department of Physics, Faculty of Science, Shahid Chamran University of Ahvaz, Ahvaz (Iran, Islamic Republic of); Lorestaniweiss, Zeinab, E-mail: rashidian1983z@gmail.com [Department of Physics, Faculty of Science, Lorestan University, Lorestan (Iran, Islamic Republic of); Ueda, Akiko [Faculty of Pure and Applied Sciences, University of Tsukuba, Tsukuba (Japan)

    2017-02-15

    In this work, we study the transport properties of Dirac fermions through the ferromagnetic silicene which is sandwiched between the Graphene leads (G/FS/G). Spin/valley conductance, spin/valley polarization, and also Fano factor are theoretically calculated using the Landauer-Buttiker formula. We find that the fully valley and spin polarized currents through the G/FS/G junction can be obtained by increasing the electric field strength and the length of ferromagnetic silicene region. Moreover, the valley polarization can be tuned from negative to positive values by changing the electric field. We find that the Fano factor also changes with the spin and valley polarization. Our findings of high controllability of the spin and valley transport in such a G/FS/G junction the potential of this junction for spin-valleytronics applications.

  7. Dynamic current susceptibility as a probe of Majorana bound states in nanowire-based Josephson junctions

    Science.gov (United States)

    Trif, Mircea; Dmytruk, Olesia; Bouchiat, Hélène; Aguado, Ramón; Simon, Pascal

    2018-02-01

    We theoretically study a Josephson junction based on a semiconducting nanowire subject to a time-dependent flux bias. We establish a general density-matrix approach for the dynamical response of the Majorana junction and calculate the resulting flux-dependent susceptibility using both microscopic and effective low-energy descriptions for the nanowire. We find that the diagonal component of the susceptibility, associated with the dynamics of the Majorana state populations, dominates over the standard Kubo contribution for a wide range of experimentally relevant parameters. The diagonal term, explored, in this Rapid Communication, in the context of Majorana physics, allows probing accurately the presence of Majorana bound states in the junction.

  8. Jump in current at the gap voltage in a superconducting junction

    International Nuclear Information System (INIS)

    Coombes, J.M.; Carbotte, J.P.

    1986-01-01

    For many materials not previously considered, we have calculated the jump, at the gap voltage, in the quasiparticle current of a tunnel junction. An empirical relationship between the jump and the effective electron-phonon coupling λ-μ/sup */ previously established is confirmed. Further, a new and equally as accurate correlation is found with the strong coupling index T/sub c//ω/sub ln/, where T/sub c/ is the critical temperature and ω/sub ln/ a specific characteristic phonon energy. A simple formula for the jump which includes a strong-coupling correction is derived and found to fit the observed correlation well. Finally, we study the effect on the jump of unusual values of Coulomb pseudopotential μ/sup */. Also a δ-function electron-phonon spectral density α 2 F(ω) is used to help in the understanding of the range of values that is possible for the jump when α 2 F(ω) is not restricted to realistic shapes

  9. Optimized electrode configuration for current-in-plane characterization of magnetic tunnel junction stacks

    International Nuclear Information System (INIS)

    Cagliani, A; Kjær, D; Østerberg, F W; Hansen, O; Petersen, D H; Nielsen, P F

    2017-01-01

    The current-in-plane tunneling technique (CIPT) has been a crucial tool in the development of magnetic tunnel junction stacks suitable for magnetic random access memories (MRAM) for more than a decade. The MRAM development has now reached the maturity to make the transition from the R and D phase to the pilot production phase. This will require an improvement in the repeatability of the CIPT metrology technique. Here, we present an analytical model that can be used to simulate numerically the repeatability of a CIPT measurement for an arbitrary MTJ stack prior to any CIPT measurement. The model describes mathematically the main sources of error arising when a micro multi-electrode probe is used to perform a CIPT measurement. The numerically simulated repeatability values obtained on four different MTJ stacks are verified by experimental data and the model is used to optimize the choice of electrodes on a multi-electrode probe to reach up to 36% improvement on the repeatability for the resistance area product and the tunneling magnetoresistance measurement, without any hardware modification. (paper)

  10. Perpendicular STT_RAM cell in 8 nm technology node using Co1/Ni3(1 1 1)||Gr2||Co1/Ni3(1 1 1) structure as magnetic tunnel junction

    Science.gov (United States)

    Varghani, Ali; Peiravi, Ali; Moradi, Farshad

    2018-04-01

    The perpendicular anisotropy Spin-Transfer Torque Random Access Memory (P-STT-RAM) is considered to be a promising candidate for high-density memories. Many distinct advantages of Perpendicular Magnetic Tunnel Junction (P-MTJ) compared to the conventional in-plane MTJ (I-MTJ) such as lower switching current, circular cell shape that facilitates manufacturability in smaller technology nodes, large thermal stability, smaller cell size, and lower dipole field interaction between adjacent cells make it a promising candidate as a universal memory. However, for small MTJ cell sizes, the perpendicular technology requires new materials with high polarization and low damping factor as well as low resistance area product of a P-MTJ in order to avoid a high write voltage as technology is scaled down. A new graphene-based STT-RAM cell for 8 nm technology node that uses high perpendicular magnetic anisotropy cobalt/nickel (Co/Ni) multilayer as magnetic layers is proposed in this paper. The proposed junction benefits from enough Tunneling Magnetoresistance Ratio (TMR), low resistance area product, low write voltage, and low power consumption that make it suitable for 8 nm technology node.

  11. Tunnel currents produced by defects in p-n junctions of GaAs grown on vapor phase

    International Nuclear Information System (INIS)

    Barrales Guadarrama, V R; Rodríguez Rodriguez, E M; Barrales Guadarrama, R; Reyes Ayala, N

    2017-01-01

    With the purpose of assessing if the epitaxy on vapor phase technique “Close Space Vapor Deposition (CSVT)” is capable of produce thin films with adequate properties in order to manufacture p-n junctions, a study of invert and direct current was developed, in a temperature range of 94K to 293K, to junctions p-n of GaAs grown through the technique CSVT. It is shown that the dominant current, within the range 10 -7 to 10 -2 A, is consistent with a currents model of the type of internal emission form field, which shows these currents are due to the presence of localized states in the band gap. (paper)

  12. Valley and spin resonant tunneling current in ferromagnetic/nonmagnetic/ferromagnetic silicene junction

    Directory of Open Access Journals (Sweden)

    Yaser Hajati

    2016-02-01

    Full Text Available We study the transport properties in a ferromagnetic/nonmagnetic/ferromagnetic (FNF silicene junction in which an electrostatic gate potential, U, is attached to the nonmagnetic region. We show that the electrostatic gate potential U is a useful probe to control the band structure, quasi-bound states in the nonmagnetic barrier as well as the transport properties of the FNF silicene junction. In particular, by introducing the electrostatic gate potential, both the spin and valley conductances of the junction show an oscillatory behavior. The amplitude and frequency of such oscillations can be controlled by U. As an important result, we found that by increasing U, the second characteristic of the Klein tunneling is satisfied as a result of the quasiparticles chirality which can penetrate through a potential barrier. Moreover, it is found that for special values of U, the junction shows a gap in the spin and valley-resolve conductance and the amplitude of this gap is only controlled by the on-site potential difference, Δz. Our findings of high controllability of the spin and valley transport in such a FNF silicene junction may improve the performance of nano-electronics and spintronics devices.

  13. Barrier Parameters and Current Transport Characteristics of Ti/ p-InP Schottky Junction Modified Using Orange G (OG) Organic Interlayer

    Science.gov (United States)

    Sreenu, K.; Venkata Prasad, C.; Rajagopal Reddy, V.

    2017-10-01

    A Ti/Orange G/ p-InP metal/interlayer/semiconductor (MIS) junction has been prepared with Orange G (OG) organic layer by electron beam evaporation and spin coating processes. The electrical properties of Ti/ p-InP metal/semiconductor (MS) and Ti/OG/ p-InP MIS junctions have been analyzed based on current-voltage ( I- V) and capacitance-voltage ( C- V) characteristics. The MIS junction exhibited higher rectifying behavior than the MS junction. The higher barrier height (BH) of the MIS junction compared with the MS junction indicates effective modification by the OG layer. Also, the BH, ideality factor, shunt resistance, and series resistance were extracted based on the I- V characteristic, Cheung's and Norde's methods, and the ΨS- V plot. The BH evaluated by Cheung's and Norde's methods and the ΨS- V plot was shown to be similar, confirming the reliability and validity of the methods applied. The extracted interface state density ( N SS) of the MIS junction was less than for the MS junction, revealing that the OG organic layer reduced the N SS value. Analysis demonstrated that, in the lower bias region, the reverse current conduction mechanism was dominated by Poole-Frenkel emission for both the MS and MIS junction. Meanwhile, in the higher bias region, Schottky emission governed the reverse current conduction mechanism. The results suggest that such OG layers have potential for use in high-quality electronic devices.

  14. Multiscale modeling of current-induced switching in magnetic tunnel junctions using ab initio spin-transfer torques

    Science.gov (United States)

    Ellis, Matthew O. A.; Stamenova, Maria; Sanvito, Stefano

    2017-12-01

    There exists a significant challenge in developing efficient magnetic tunnel junctions with low write currents for nonvolatile memory devices. With the aim of analyzing potential materials for efficient current-operated magnetic junctions, we have developed a multi-scale methodology combining ab initio calculations of spin-transfer torque with large-scale time-dependent simulations using atomistic spin dynamics. In this work we introduce our multiscale approach, including a discussion on a number of possible schemes for mapping the ab initio spin torques into the spin dynamics. We demonstrate this methodology on a prototype Co/MgO/Co/Cu tunnel junction showing that the spin torques are primarily acting at the interface between the Co free layer and MgO. Using spin dynamics we then calculate the reversal switching times for the free layer and the critical voltages and currents required for such switching. Our work provides an efficient, accurate, and versatile framework for designing novel current-operated magnetic devices, where all the materials details are taken into account.

  15. Onset of chaos and dc current-voltage characteristics of rf-driven Josephson junctions in the low-frequency regime

    International Nuclear Information System (INIS)

    Chi, C.C.; Vanneste, C.

    1990-01-01

    A comprehensive picture of the dc current-voltage (I-V) characteristics of rf-driven Josephson junctions in the low-frequency regime is presented. The boundary of the low-frequency regime is roughly defined by the junction characteristic frequency for overdamped junctions, and by the inverse of the junction damping time for underdamped junctions. An adiabatic model valid for the low-frequency regime is used to describe the overall shapes of the I-V curves, which is in good agreement with both the numerical simulations and the experimental results. For underdamped junctions, the Shapiro steps are the prominent features on the I-V curves if the rf frequency is sufficiently below the boundary. As the rf frequency is increased towards the boundary, large negatively-going tails on top of the Shapiro steps are observed both experimentally and numerically. Numerical simulations using the resistively- and capacitively-shunted-junction model (RCSJ model) reveal that the negatively-going tail is a signature of the low-frequency boundary of the junction chaotic regime. With use of the adiabatic model and the existence of plasma oscillations for underdamped junctions, the onset of chaos and its effect on the Shapiro steps can be fully explained. The high-frequency limit of the adiabatic model and the chaotic behavior of the Josephson junctions beyond the low-frequency regime are also briefly discussed

  16. Gap Junctions

    Science.gov (United States)

    Nielsen, Morten Schak; Axelsen, Lene Nygaard; Sorgen, Paul L.; Verma, Vandana; Delmar, Mario; Holstein-Rathlou, Niels-Henrik

    2013-01-01

    Gap junctions are essential to the function of multicellular animals, which require a high degree of coordination between cells. In vertebrates, gap junctions comprise connexins and currently 21 connexins are known in humans. The functions of gap junctions are highly diverse and include exchange of metabolites and electrical signals between cells, as well as functions, which are apparently unrelated to intercellular communication. Given the diversity of gap junction physiology, regulation of gap junction activity is complex. The structure of the various connexins is known to some extent; and structural rearrangements and intramolecular interactions are important for regulation of channel function. Intercellular coupling is further regulated by the number and activity of channels present in gap junctional plaques. The number of connexins in cell-cell channels is regulated by controlling transcription, translation, trafficking, and degradation; and all of these processes are under strict control. Once in the membrane, channel activity is determined by the conductive properties of the connexin involved, which can be regulated by voltage and chemical gating, as well as a large number of posttranslational modifications. The aim of the present article is to review our current knowledge on the structure, regulation, function, and pharmacology of gap junctions. This will be supported by examples of how different connexins and their regulation act in concert to achieve appropriate physiological control, and how disturbances of connexin function can lead to disease. © 2012 American Physiological Society. Compr Physiol 2:1981-2035, 2012. PMID:23723031

  17. Leakage current reduction of vertical GaN junction barrier Schottky diodes using dual-anode process

    Science.gov (United States)

    Hayashida, Tetsuro; Nanjo, Takuma; Furukawa, Akihiko; Watahiki, Tatsuro; Yamamuka, Mikio

    2018-04-01

    The origin of the leakage current of a trench-type vertical GaN diode was discussed. We found that the edge of p-GaN is the main leakage spot. To reduce the reverse leakage current at the edge of p-GaN, a dual-anode process was proposed. As a result, the reverse blocking voltage defined at the leakage current density of 1 mA/cm2 of a vertical GaN junction barrier Schottky (JBS) diode was improved from 780 to 1,190 V, which is the highest value ever reported for vertical GaN Schottky barrier diodes (SBDs).

  18. Fluctuation in Interface and Electronic Structure of Single-Molecule Junctions Investigated by Current versus Bias Voltage Characteristics.

    Science.gov (United States)

    Isshiki, Yuji; Fujii, Shintaro; Nishino, Tomoaki; Kiguchi, Manabu

    2018-03-14

    Structural and electronic detail at the metal-molecule interface has a significant impact on the charge transport across the molecular junctions, but its precise understanding and control still remain elusive. On the single-molecule scale, the metal-molecule interface structures and relevant charge transport properties are subject to fluctuation, which contain the fundamental science of single-molecule transport and implication for manipulability of the transport properties in electronic devices. Here, we present a comprehensive approach to investigate the fluctuation in the metal-molecule interface in single-molecule junctions, based on current-voltage ( I- V) measurements in combination with first-principles simulation. Contrary to conventional molecular conductance studies, this I- V approach provides a correlated statistical description of both the degree of electronic coupling across the metal-molecule interface and the molecular orbital energy level. This statistical approach was employed to study fluctuation in single-molecule junctions of 1,4-butanediamine (DAB), pyrazine (PY), 4,4'-bipyridine (BPY), and fullerene (C 60 ). We demonstrate that molecular-dependent fluctuation of σ-, π-, and π-plane-type interfaces can be captured by analyzing the molecular orbital (MO) energy level under mechanical perturbation. While the MO level of DAB with the σ-type interface shows weak distance dependence and fluctuation, the MO level of PY, BPY, and C 60 features unique distance dependence and molecular-dependent fluctuation against the mechanical perturbation. The MO level of PY and BPY with the σ+π-type interface increases with the increase in the stretch distance. In contrast, the MO level of C 60 with the π-plane-type interface decreases with the increase in the stretching perturbation. This study provides an approach to resolve the structural and electronic fluctuation in the single-molecule junctions and insight into the molecular-dependent fluctuation in

  19. Radio-frequency properties of stacked long Josephson junctions with nonuniform bias current distribution

    DEFF Research Database (Denmark)

    Filatrella, G; Pedersen, Niels Falsig

    1999-01-01

    We have numerically investigated the behavior of stacks of long Josephson junctions considering a nonuniform bias profile. In the presence of a microwave field the nonuniform bias, which favors the formation of fluxons, can give rise to a change of the sequence of radio-frequency induced steps...

  20. Pronounced Environmental Effects on Injection Currents in EGaln Tunneling Junctions Comprising Self-Assembled Monolayers

    NARCIS (Netherlands)

    Carlotti, Marco; Degen, Maarten; Zhang, Yanxi; Chiechi, Ryan C.

    2016-01-01

    Large-area tunneling junctions using eutectic Ga-In (EGaIn) as a top contact have proven to be a robust, reproducible, and technologically relevant platform for molecular electronics. Thus far, the majority of studies have focused on saturated molecules with backbones consisting mainly of alkanes in

  1. Inhomogeneity in barrier height at graphene/Si (GaAs) Schottky junctions.

    Science.gov (United States)

    Tomer, D; Rajput, S; Hudy, L J; Li, C H; Li, L

    2015-05-29

    Graphene (Gr) interfaced with a semiconductor forms a Schottky junction with rectifying properties, however, fluctuations in the Schottky barrier height are often observed. In this work, Schottky junctions are fabricated by transferring chemical vapor deposited monolayer Gr onto n-type Si and GaAs substrates. Temperature dependence of the barrier height and ideality factor are obtained by current-voltage measurements between 215 and 350 K. An increase in the zero bias barrier height and decrease in the ideality factor are observed with increasing temperature for both junctions. Such behavior is attributed to barrier inhomogeneities that arise from interfacial disorders as revealed by scanning tunneling microscopy/spectroscopy. Assuming a Gaussian distribution of the barrier heights, mean values of 1.14 ± 0.14 eV and 0.76 ± 0.10 eV are found for Gr/Si and Gr/GaAs junctions, respectively. These findings resolve the origin of barrier height inhomogeneities in these Schottky junctions.

  2. Current-voltage characteristics of single-molecule diarylethene junctions measured with adjustable gold electrodes in solution.

    Science.gov (United States)

    Briechle, Bernd M; Kim, Youngsang; Ehrenreich, Philipp; Erbe, Artur; Sysoiev, Dmytro; Huhn, Thomas; Groth, Ulrich; Scheer, Elke

    2012-01-01

    We report on an experimental analysis of the charge transport through sulfur-free photochromic molecular junctions. The conductance of individual molecules contacted with gold electrodes and the current-voltage characteristics of these junctions are measured in a mechanically controlled break-junction system at room temperature and in liquid environment. We compare the transport properties of a series of molecules, labeled TSC, MN, and 4Py, with the same switching core but varying side-arms and end-groups designed for providing the mechanical and electrical contact to the gold electrodes. We perform a detailed analysis of the transport properties of TSC in its open and closed states. We find rather broad distributions of conductance values in both states. The analysis, based on the assumption that the current is carried by a single dominating molecular orbital, reveals distinct differences between both states. We discuss the appearance of diode-like behavior for the particular species 4Py that features end-groups, which preferentially couple to the metal electrode by physisorption. We show that the energetic position of the molecular orbital varies as a function of the transmission. Finally, we show for the species MN that the use of two cyano end-groups on each side considerably enhances the coupling strength compared to the typical behavior of a single cyano group.

  3. Current-induced magnetization switching in atom-thick tungsten engineered perpendicular magnetic tunnel junctions with large tunnel magnetoresistance.

    Science.gov (United States)

    Wang, Mengxing; Cai, Wenlong; Cao, Kaihua; Zhou, Jiaqi; Wrona, Jerzy; Peng, Shouzhong; Yang, Huaiwen; Wei, Jiaqi; Kang, Wang; Zhang, Youguang; Langer, Jürgen; Ocker, Berthold; Fert, Albert; Zhao, Weisheng

    2018-02-14

    Perpendicular magnetic tunnel junctions based on MgO/CoFeB structures are of particular interest for magnetic random-access memories because of their excellent thermal stability, scaling potential, and power dissipation. However, the major challenge of current-induced switching in the nanopillars with both a large tunnel magnetoresistance ratio and a low junction resistance is still to be met. Here, we report spin transfer torque switching in nano-scale perpendicular magnetic tunnel junctions with a magnetoresistance ratio up to 249% and a resistance area product as low as 7.0 Ω µm 2 , which consists of atom-thick W layers and double MgO/CoFeB interfaces. The efficient resonant tunnelling transmission induced by the atom-thick W layers could contribute to the larger magnetoresistance ratio than conventional structures with Ta layers, in addition to the robustness of W layers against high-temperature diffusion during annealing. The critical switching current density could be lower than 3.0 MA cm -2 for devices with a 45-nm radius.

  4. Strain-assisted current-induced magnetization reversal in magnetic tunnel junctions: A micromagnetic study with phase-field microelasticity

    International Nuclear Information System (INIS)

    Huang, H. B.; Hu, J. M.; Yang, T. N.; Chen, L. Q.; Ma, X. Q.

    2014-01-01

    Effect of substrate misfit strain on current-induced in-plane magnetization reversal in CoFeB-MgO based magnetic tunnel junctions is investigated by combining micromagnetic simulations with phase-field microelasticity theory. It is found that the critical current density for in-plane magnetization reversal decreases dramatically with an increasing substrate strain, since the effective elastic field can drag the magnetization to one of the four in-plane diagonal directions. A potential strain-assisted multilevel bit spin transfer magnetization switching device using substrate misfit strain is also proposed.

  5. Ballistic current transport studies of ferromagnetic multilayer films and tunnel junctions (invited)

    International Nuclear Information System (INIS)

    Rippard, W. H.; Perrella, A. C.; Buhrman, R. A.

    2001-01-01

    Three applications of ballistic electron microscopy are used to study, with nanometer-scale resolution, the magnetic and electronic properties of magnetic multilayer thin films and tunnel junctions. First, the capabilities of ballistic electron magnetic microscopy are demonstrated through an investigation of the switching behavior of continuous Ni 80 Fe 20 /Cu/Co trilayer films in the presence of an applied magnetic field. Next, the ballistic, hot-electron transport properties of Co films and multilayers formed by thermal evaporation and magnetron sputtering are compared, a comparison which reveals significant differences in the ballistic transmissivity of thin film multilayers formed by the two techniques. Finally, the electronic properties of thin aluminum oxide tunnel junctions formed by thermal evaporation and sputter deposition are investigated. Here the ballistic electron microscopy studies yield a direct measurement of the barrier height of the aluminum oxide barriers, a result that is invariant over a wide range of oxidation conditions. [copyright] 2001 American Institute of Physics

  6. Current-voltage characteristics of a tunnel junction with resonant centers

    International Nuclear Information System (INIS)

    Ivanov, T.; Valtchinov, V.

    1994-05-01

    We calculated the I-V characteristics of a tunnel junction containing impurities in the barrier. We consider the indirect resonant tunneling involving the impurities. The Coulomb repulsion energy E c between two electrons with opposite spins simultaneously residing on the impurity is introduced by an Anderson Hamiltonian. At low temperatures T is much less than E c the I-V characteristics is linear in V both for V c and for V>E c and changes slope at V=E c . This behaviour reflects the energy spectrum of the impurity electrons - the finite value of the charging energy E c . At T ∼ E c the junction reveals an ohmic-like behaviour as a result of the smearing out of the charging effects by the thermal fluctuations. (author). 10 refs, 2 figs

  7. Detection of MM.-radiation with high current density submicron niobium-niobium Josephson junctions

    International Nuclear Information System (INIS)

    Daalmans, G.M.; Graauw, T. de; Lidholm, S.; Vliet, F. v.

    1980-01-01

    The rf-induced step heights in submicron niobium-niobium Josephson junctions are in good agreement with Russer theory at 230 and 240 GHz. At 115 and 460 GHz the agreement is less but still reasonably good. The junction noise without rf-bias is within a factor of two equal to the theoretical limit. With rf-bias applied it can be equal to the theoretical limit within a factor of two. The maximum conversion efficiency measured at 230 GHz was 0.18 and the lowest single side band mixer noise temperature at the same frequency was 380 K. Saturation effects are limiting the performance of the mixer. Improvements in eta and Tsub(M) of a factor of two can be expected by eliminating these saturation effects. The mixer which has been studied most extensively starting at 12-3-80 is still alive at 5-6-80 after many cooling cycles, storage at room temperature and soldering in and out of the dewar. The reliability of this type of junction cannot be questionable anymore. (orig.)

  8. Defining the value of injection current and effective electrical contact area for EGaIn-based molecular tunneling junctions.

    Science.gov (United States)

    Simeone, Felice C; Yoon, Hyo Jae; Thuo, Martin M; Barber, Jabulani R; Smith, Barbara; Whitesides, George M

    2013-12-04

    Analysis of rates of tunneling across self-assembled monolayers (SAMs) of n-alkanethiolates SCn (with n = number of carbon atoms) incorporated in junctions having structure Ag(TS)-SAM//Ga2O3/EGaIn leads to a value for the injection tunnel current density J0 (i.e., the current flowing through an ideal junction with n = 0) of 10(3.6±0.3) A·cm(-2) (V = +0.5 V). This estimation of J0 does not involve an extrapolation in length, because it was possible to measure current densities across SAMs over the range of lengths n = 1-18. This value of J0 is estimated under the assumption that values of the geometrical contact area equal the values of the effective electrical contact area. Detailed experimental analysis, however, indicates that the roughness of the Ga2O3 layer, and that of the Ag(TS)-SAM, determine values of the effective electrical contact area that are ~10(-4) the corresponding values of the geometrical contact area. Conversion of the values of geometrical contact area into the corresponding values of effective electrical contact area results in J0(+0.5 V) = 10(7.6±0.8) A·cm(-2), which is compatible with values reported for junctions using top-electrodes of evaporated Au, and graphene, and also comparable with values of J0 estimated from tunneling through single molecules. For these EGaIn-based junctions, the value of the tunneling decay factor β (β = 0.75 ± 0.02 Å(-1); β = 0.92 ± 0.02 nC(-1)) falls within the consensus range across different types of junctions (β = 0.73-0.89 Å(-1); β = 0.9-1.1 nC(-1)). A comparison of the characteristics of conical Ga2O3/EGaIn tips with the characteristics of other top-electrodes suggests that the EGaIn-based electrodes provide a particularly attractive technology for physical-organic studies of charge transport across SAMs.

  9. Rectification of current responds to incorporation of fullerenes into mixed-monolayers of alkanethiolates in tunneling junctions.

    Science.gov (United States)

    Qiu, Li; Zhang, Yanxi; Krijger, Theodorus L; Qiu, Xinkai; Hof, Patrick Van't; Hummelen, Jan C; Chiechi, Ryan C

    2017-03-01

    This paper describes the rectification of current through molecular junctions comprising self-assembled monolayers of decanethiolate through the incorporation of C 60 fullerene moieties bearing undecanethiol groups in junctions using eutectic Ga-In (EGaIn) and Au conducting probe AFM (CP-AFM) top-contacts. The degree of rectification increases with increasing exposure of the decanethiolate monolayers to the fullerene moieties, going through a maximum after 24 h. We ascribe this observation to the resulting mixed-monolayer achieving an optimal packing density of fullerene cages sitting above the alkane monolayer. Thus, the degree of rectification is controlled by the amount of fullerene present in the mixed-monolayer. The voltage dependence of R varies with the composition of the top-contact and the force applied to the junction and the energy of the lowest unoccupied π-state determined from photoelectron spectroscopy is consistent with the direction of rectification. The maximum value of rectification R = | J (+)/ J (-)| = 940 at ±1 V or 617 at ±0.95 V is in agreement with previous studies on pure monolayers relating the degree of rectification to the volume of the head-group on which the frontier orbitals are localized.

  10. Magnetic electron focusing and tuning of the electron current with a pn-junction

    Energy Technology Data Exchange (ETDEWEB)

    Milovanović, S. P., E-mail: slavisa.milovanovic@uantwerpen.be; Ramezani Masir, M., E-mail: mrmphys@gmail.com; Peeters, F. M., E-mail: francois.peeters@uantwerpen.be [Departement Fysica, Universiteit Antwerpen, Groenenborgerlaan 171, B-2020 Antwerpen (Belgium)

    2014-01-28

    Transverse magnetic focusing properties of graphene using a ballistic four terminal structure are investigated. The electric response is obtained using the semiclassical billiard model. The transmission exhibits pronounced peaks as a consequence of skipping orbits at the edge of the structure. When we add a pn-junction between the two probes, snake states along the pn-interface appear. Injected electrons are guided by the pn-interface to one of the leads depending on the value of the applied magnetic field. Oscillations in the resistance are found depending on the amount of particles that end up in each lead.

  11. Vertical current-flow enhancement via fabrication of GaN nanorod p–n junction diode on graphene

    International Nuclear Information System (INIS)

    Ryu, Sung Ryong; Ram, S.D. Gopal; Lee, Seung Joo; Cho, Hak-dong; Lee, Sejoon; Kang, Tae Won; Kwon, Sangwoo; Yang, Woochul; Shin, Sunhye; Woo, Yongdeuk

    2015-01-01

    Highlights: • Uniaxial p–n junction diode in GaN nanorod is made by Hydride vapor phase epitaxy method. • The p–n junction diode property is clearly observed from the fabricated uniaxial p–n junction nanorod GaN nanorod. • Graphene is used as a current spreading layer to reduce the lateral resistance up to 700 times when compared with the commercial sapphire substrate, which is clearly explained with the aid of an equivalent circuit. • Kelvin Force Probe microscopy method is employed to visualize the p- and n- regions in a single GaN nanorod. - Abstract: Mg doped GaN nanorods were grown on undoped n-type GaN nanorods uniaxial on monolayer graphene by hydride vapor phase epitaxy (HVPE) method. The monolayer graphene used as the bottom electrode and a substrate as well provides good electrical contact, acts as a current spreading layer, well suitable for the growth of hexagonal GaN nanorod. In addition it has a work function suitable to that of n-GaN. The formed p–n nanorods show a Schottky behavior with a turn on voltage of 3 V. Using graphene as the substrate, the resistance of the nanorod is reduced by 700 times when compared with the case without using graphene as the current spreading layer. The low resistance of graphene acts in parallel with the resistance of the GaN buffer layer, and reduces the resistance drastically. The formed p–n junction in a single GaN nanorod is visualized by Kelvin Force Probe Microscopy (KPFM) to have distinctively contrast p and n regions. The measured contact potential difference of p-and n-region has a difference of 103 mV which well confirms the formed regions are electronically different. Low temperature photoluminescence (PL) spectra give evidence of dopant related acceptor bound emission at 3.2 eV different from 3.4 eV of undoped GaN. The crystalline structure, compositional purity is confirmed by X-ray diffraction (XRD), Transmission and Scanning electron microcopies (SEM), (TEM), Energy dispersive analysis

  12. Vertical current-flow enhancement via fabrication of GaN nanorod p–n junction diode on graphene

    Energy Technology Data Exchange (ETDEWEB)

    Ryu, Sung Ryong [Quantum-functional Semiconductor Research Center, Dongguk University-Seoul, 100-715 (Korea, Republic of); Department of physics, Dongguk University, Seoul, 100-715 (Korea, Republic of); Ram, S.D. Gopal; Lee, Seung Joo; Cho, Hak-dong; Lee, Sejoon [Quantum-functional Semiconductor Research Center, Dongguk University-Seoul, 100-715 (Korea, Republic of); Kang, Tae Won, E-mail: twkang@dongguk.edu [Quantum-functional Semiconductor Research Center, Dongguk University-Seoul, 100-715 (Korea, Republic of); Clean Energy and Nano Convergence Centre, Hindustan University, Chennai 600 016 (India); Kwon, Sangwoo; Yang, Woochul [Department of physics, Dongguk University, Seoul, 100-715 (Korea, Republic of); Shin, Sunhye [Soft-Epi Inc., 240 Opo-ro, Opo-eup, Gwangju-si, Gyeonggi-do (Korea, Republic of); Woo, Yongdeuk [Department of Mechanical and Automotive Engineering, Woosuk University, Chonbuk 565-701 (Korea, Republic of)

    2015-08-30

    Highlights: • Uniaxial p–n junction diode in GaN nanorod is made by Hydride vapor phase epitaxy method. • The p–n junction diode property is clearly observed from the fabricated uniaxial p–n junction nanorod GaN nanorod. • Graphene is used as a current spreading layer to reduce the lateral resistance up to 700 times when compared with the commercial sapphire substrate, which is clearly explained with the aid of an equivalent circuit. • Kelvin Force Probe microscopy method is employed to visualize the p- and n- regions in a single GaN nanorod. - Abstract: Mg doped GaN nanorods were grown on undoped n-type GaN nanorods uniaxial on monolayer graphene by hydride vapor phase epitaxy (HVPE) method. The monolayer graphene used as the bottom electrode and a substrate as well provides good electrical contact, acts as a current spreading layer, well suitable for the growth of hexagonal GaN nanorod. In addition it has a work function suitable to that of n-GaN. The formed p–n nanorods show a Schottky behavior with a turn on voltage of 3 V. Using graphene as the substrate, the resistance of the nanorod is reduced by 700 times when compared with the case without using graphene as the current spreading layer. The low resistance of graphene acts in parallel with the resistance of the GaN buffer layer, and reduces the resistance drastically. The formed p–n junction in a single GaN nanorod is visualized by Kelvin Force Probe Microscopy (KPFM) to have distinctively contrast p and n regions. The measured contact potential difference of p-and n-region has a difference of 103 mV which well confirms the formed regions are electronically different. Low temperature photoluminescence (PL) spectra give evidence of dopant related acceptor bound emission at 3.2 eV different from 3.4 eV of undoped GaN. The crystalline structure, compositional purity is confirmed by X-ray diffraction (XRD), Transmission and Scanning electron microcopies (SEM), (TEM), Energy dispersive analysis

  13. NbN/AlN/NbN tunnel junctions with high current density up to 54 kA/cm2

    International Nuclear Information System (INIS)

    Wang, Z.; Kawakami, A.; Uzawa, Y.

    1997-01-01

    We report on progress in the development of high current density NbN/AlN/NbN tunnel junctions for applications as submillimeter wave superconductor-insulator-superconductor mixers. A very high current density up to 54 kA/cm 2 , roughly an order of magnitude larger than any reported results for all-NbN tunnel junctions, was achieved in the junctions with about 1 nm thick AlN barriers. The magnetic field and temperature dependence of critical supercurrents were measured to investigate the Josephson tunneling behavior of critical supercurrents in the high-J c junctions. The junctions showed high-quality junction characteristics with a large gap voltage of 5 mV and sharp quasiparticle current rise (ΔV g =0.1 mV). The R sg /R N ratio was about 5 with a V m value of 14 mV measured at 4.2 K. copyright 1997 American Institute of Physics

  14. Spin-flip scattering effect on the current-induced spin torque in ferromagnet-insulator-ferromagnet tunnel junctions

    International Nuclear Information System (INIS)

    Zhu Zhengang; Su Gang; Jin Biao; Zheng Qingrong

    2003-01-01

    We have investigated the current-induced spin transfer torque of a ferromagnet-insulator-ferromagnet tunnel junction by taking the spin-flip scatterings into account. It is found that the spin-flip scattering can induce an additional spin torque, enhancing the maximum of the spin torque and giving rise to an angular shift compared to the case when the spin-flip scatterings are neglected. The effects of the molecular fields of the left and right ferromagnets on the spin torque are also studied. It is found that τ Rx /I e (τ Rx is the spin-transfer torque acting on the right ferromagnet and I e is the tunneling electrical current) does vary with the molecular fields. At two certain angles, τ Rx /I e is independent of the molecular field of the right ferromagnet, resulting in two crossing points in the curve of τ Rx /I e versus the relevant orientation for different molecular fields

  15. Magnetic field manipulation of spin current in a single-molecule magnet tunnel junction with two-electron Coulomb interaction

    Science.gov (United States)

    Zhang, Chao; Yao, Hui; Nie, Yi-Hang; Liang, Jiu-Qing; Niu, Peng-Bin

    2018-04-01

    In this work, we study the generation of spin-current in a single-molecule magnet (SMM) tunnel junction with Coulomb interaction of transport electrons and external magnetic field. In the absence of field the spin-up and -down currents are symmetric with respect to the initial polarizations of molecule. The existence of magnetic field breaks the time-reversal symmetry, which leads to unsymmetrical spin currents of parallel and antiparallel polarizations. Both the amplitude and polarization direction of spin current can be controlled by the applied magnetic field. Particularly when the magnetic field increases to a certain value the spin-current with antiparallel polarization is reversed along with the magnetization reversal of the SMM. The two-electron occupation indeed enhances the transport current compared with the single-electron process. However the increase of Coulomb interaction results in the suppression of spin-current amplitude at the electron-hole symmetry point. We propose a scheme to compensate the suppression with the magnetic field.

  16. Pronounced Environmental Effects on Injection Currents in EGaIn Tunneling Junctions Comprising Self-Assembled Monolayers.

    Science.gov (United States)

    Carlotti, Marco; Degen, Maarten; Zhang, Yanxi; Chiechi, Ryan C

    2016-09-15

    Large-area tunneling junctions using eutectic Ga-In (EGaIn) as a top contact have proven to be a robust, reproducible, and technologically relevant platform for molecular electronics. Thus far, the majority of studies have focused on saturated molecules with backbones consisting mainly of alkanes in which the frontier orbitals are either highly localized or energetically inaccessible. We show that self-assembled monolayers of wire-like oligophenyleneethynylenes (OPEs), which are fully conjugated, only exhibit length-dependent tunneling behavior in a low-O 2 environment. We attribute this unexpected behavior to the sensitivity of injection current on environment. We conclude that, contrary to previous reports, the self-limiting layer of Ga 2 O 3 strongly influences transport properties and that the effect is related to the wetting behavior of the electrode. This result sheds light on the nature of the electrode-molecule interface and suggests that adhesive forces play a significant role in tunneling charge-transport in large-area molecular junctions.

  17. Temperature-sensitive junction transformations for mid-wavelength HgCdTe photovoltaic infrared detector arrays by laser beam induced current microscope

    Energy Technology Data Exchange (ETDEWEB)

    Qiu, Weicheng [College of Photoelectric Science and Engineering, National University of Defense Technology, Changsha, Hunan 410073 (China); National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083 (China); Hu, Weida, E-mail: wdhu@mail.sitp.ac.cn; Lin, Tie; Yin, Fei; Zhang, Bo; Chen, Xiaoshuang; Lu, Wei [National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083 (China); Cheng, Xiang' ai, E-mail: xiang-ai-cheng@126.com; Wang, Rui [College of Photoelectric Science and Engineering, National University of Defense Technology, Changsha, Hunan 410073 (China)

    2014-11-10

    In this paper, we report on the disappearance of the photosensitive area extension effect and the unusual temperature dependence of junction transformation for mid-wavelength, n-on-p HgCdTe photovoltaic infrared detector arrays. The n-type region is formed by B{sup +} ion implantation on Hg-vacancy-doped p-type HgCdTe. Junction transformations under different temperatures are visually captured by a laser beam induced current microscope. A physical model of temperature dependence on junction transformation is proposed and demonstrated by using numerical simulations. It is shown that Hg-interstitial diffusion and temperature activated defects jointly lead to the p-n junction transformation dependence on temperature, and the weaker mixed conduction compared with long-wavelength HgCdTe photodiode contributes to the disappearance of the photosensitive area extension effect in mid-wavelength HgCdTe infrared detector arrays.

  18. The photo-assisted heat current and its Peltier coefficient in a metal/dot/metal junction

    International Nuclear Information System (INIS)

    Crépieux, A

    2012-01-01

    The photo-assisted heat current through a metal/dot/metal junction and its associated Peltier coefficient are computed in the framework of the time-dependent out-of-equilibrium Keldysh formalism in the presence of a dot energy modulation. When the frequency of the modulation is much larger than the amplitude of the modulation, the heat current follows the sinusoidal time evolution of the dot energy. This is no longer the case when the modulation frequency becomes of the order of or smaller than the amplitude of the modulation. To characterize this non-sinusoidal behavior, we have calculated the harmonics of the photo-assisted heat current. The zero-order harmonic can be expressed as an infinite sum of dc heat currents associated with a dot with shifted energies. It exhibits a devil's staircase profile with non-horizontal steps, whereas it is established that the steps are horizontal for the zero-order harmonic of the photo-assisted electric current. This particularity is related to the fact that the dot heat is not a conserved quantity due to energy dissipation within the tunnel barriers.

  19. Laser induced non-monotonic degradation in short-circuit current of triple-junction solar cells

    Science.gov (United States)

    Dou, Peng-Cheng; Feng, Guo-Bin; Zhang, Jian-Min; Song, Ming-Ying; Zhang, Zhen; Li, Yun-Peng; Shi, Yu-Bin

    2018-06-01

    In order to study the continuous wave (CW) laser radiation effects and mechanism of GaInP/GaAs/Ge triple-junction solar cells (TJSCs), 1-on-1 mode irradiation experiments were carried out. It was found that the post-irradiation short circuit current (ISC) of the TJSCs initially decreased and then increased with increasing of irradiation laser power intensity. To explain this phenomenon, a theoretical model had been established and then verified by post-damage tests and equivalent circuit simulations. Conclusion was drawn that laser induced alterations in the surface reflection and shunt resistance were the main causes for the observed non-monotonic decrease in the ISC of the TJSCs.

  20. Effect of quantum noise and tunneling on the fluctuational voltage-current characteristics and the lifetime of the zero-voltage state in Josephson junctions

    International Nuclear Information System (INIS)

    Mel'nikov, V.I.; Suetoe, A.

    1986-01-01

    The minima of the potential energy for the dynamical variable phi of a Josephson junction are separated by barriers of height hI/sub c//e, where I/sub c/ is the critical current. At low temperatures, T hΩ/2π (Ω is the Josephson plasma frequency). We consider this problem for high-quality junctions (RCΩ>>1, R and C are the resistance and the capacitance of the junction), accounting for the effect of a Johnson-Nyquist noise and quantum tunneling at the barrier top. With a simplifying assumption, we derive a pair of integral equations containing an energy variable for the steady-state distribution of phi and phi-dot, and solve it by a modification of the Wiener-Hopf method. The result is a formula for the current dependence of the fluctuational voltage, valid for currents I 2 <<1

  1. Estimation of presynaptic calcium currents and endogenous calcium buffers at the frog neuromuscular junction with two different calcium fluorescent dyes.

    Science.gov (United States)

    Samigullin, Dmitry; Fatikhov, Nijaz; Khaziev, Eduard; Skorinkin, Andrey; Nikolsky, Eugeny; Bukharaeva, Ellya

    2014-01-01

    At the frog neuromuscular junction, under physiological conditions, the direct measurement of calcium currents and of the concentration of intracellular calcium buffers-which determine the kinetics of calcium concentration and neurotransmitter release from the nerve terminal-has hitherto been technically impossible. With the aim of quantifying both Ca(2+) currents and the intracellular calcium buffers, we measured fluorescence signals from nerve terminals loaded with the low-affinity calcium dye Magnesium Green or the high-affinity dye Oregon Green BAPTA-1, simultaneously with microelectrode recordings of nerve-action potentials and end-plate currents. The action-potential-induced fluorescence signals in the nerve terminals developed much more slowly than the postsynaptic response. To clarify the reasons for this observation and to define a spatiotemporal profile of intracellular calcium and of the concentration of mobile and fixed calcium buffers, mathematical modeling was employed. The best approximations of the experimental calcium transients for both calcium dyes were obtained when the calcium current had an amplitude of 1.6 ± 0.08 pA and a half-decay time of 1.2 ± 0.06 ms, and when the concentrations of mobile and fixed calcium buffers were 250 ± 13 μM and 8 ± 0.4 mM, respectively. High concentrations of endogenous buffers define the time course of calcium transients after an action potential in the axoplasm, and may modify synaptic plasticity.

  2. Estimation of presynaptic calcium currents and endogenous calcium buffers at the frog neuromuscular junction with two different calcium fluorescent dyes

    Directory of Open Access Journals (Sweden)

    Dmitry eSamigullin

    2015-01-01

    Full Text Available At the frog neuromuscular junction, under physiological conditions, the direct measurement of calcium currents and of the concentration of intracellular calcium buffers—which determine the kinetics of calcium concentration and neurotransmitter release from the nerve terminal—has hitherto been technically impossible. With the aim of quantifying both Ca2+ currents and the intracellular calcium buffers, we measured fluorescence signals from nerve terminals loaded with the low-affinity calcium dye Magnesium Green or the high-affinity dye Oregon Green BAPTA-1, simultaneously with microelectrode recordings of nerve-action potentials and end-plate currents. The action-potential-induced fluorescence signals in the nerve terminals developed much more slowly than the postsynaptic response. To clarify the reasons for this observation and to define a spatiotemporal profile of intracellular calcium and of the concentration of mobile and fixed calcium buffers, mathematical modeling was employed. The best approximations of the experimental calcium transients for both calcium dyes were obtained when the calcium current had an amplitude of 1.6 ± 0.08 рА and a half-decay time of 1.2 ± 0.06 ms, and when the concentrations of mobile and fixed calcium buffers were 250 ± 13 µM and 8 ± 0.4 mM, respectively. High concentrations of endogenous buffers define the time course of calcium transients after an action potential in the axoplasm, and may modify synaptic plasticity.

  3. Visualization of the current density in Josephson junctions with 0- and {pi}-facets; Visualisierung der Stromverteilung in Josephsonkontakten mit 0- und {pi}-Facetten

    Energy Technology Data Exchange (ETDEWEB)

    Guerlich, Christian

    2010-05-11

    With Low-Temperature-Electron-Microscopy (LTSEM) it is possible to analyse the transport properties of solids at low temperatures. In particular it is possible to image the supercurrent density j{sub s} in Josephson junctions. This was demonstrated by comparing TTREM-images with calculated values for j{sub s}. In this thesis ramp-type Nd{sub 2-x}Ce{sub x}CuO{sub 4-y}/Nb-Josephson-junctions (NCCO/Nb) and Josephson junctions with a ferromagnetic interlayer Nb/Al-Al{sub 2}O{sub 3}/NiCu/Nb, so-called SIFS (superconductor-insulator-ferromagnet-superconductor) Josephson junctions were studied.It was demonstrated that LTSEM provides direct imaging of the sign change of the order parameter in superconductors with d{sub x{sup 2}-y{sup 2}}-symmetry. This was a controversial issue over the last decade. A step like variation in the thickness of the F-layer allows the fabrication of linear and annular Josephson junctions with different numbers of 0 and {pi} facets. With the LTSEM 0-, {pi}-, 0-{pi}-, 0-{pi}-0-, 0/2-{pi}-0/2-, 20 x (0-{pi})- as well as square-shaped-, circular- and annular-Josephson-junctions were studied. It was demonstrated, that these junctions are of good quality and have critical current densities up to 42 A/cm{sup 2} at T=4.2 K, which is a record value for SIFS junctions with a NiCu F-layer so far. By comparing the measurements with simulations a first indication of a semifluxon at the 0-{pi}-boundary was found. (orig.)

  4. The nonideality coefficient of current-voltage characteristics for p-n junctions in a high ultrahigh-frequency (microwave) field

    International Nuclear Information System (INIS)

    Shamirzaev, S. H.; Gulyamov, G.; Dadamirzaev, M. G.; Gulyamov, A. G.

    2009-01-01

    The effect of heating of electrons and holes on the nonideality coefficient of the current-voltage characteristic for a p-n junction in a high microwave field is studied. It is established that the nonideality coefficient for a diode depends on the type of charge carriers that make the major contribution to the current in the p-n junction. It is shown that, in some cases in silicon samples, the nonideality coefficient for the diode is governed by the temperature for holes in spite of the fact that the temperature for electrons is higher than the temperature for holes.

  5. Grúas-torre

    Directory of Open Access Journals (Sweden)

    Chinchilla, M.

    1964-09-01

    Full Text Available The current large volume of construction, and the new building methods, including large scale préfabrication, have made it necessary to develop adequate machinery to cope with the new requirements. These include the quick distribution of materials and the lifting of large and heavy items. One of these machines which has now attained a widespread use is the tower crane, both of the fixed and moveable type, either on tyres, rails, or of the climbing type. Although these cranes have been known for the last fifty years, their full development only began after the last World War. Their most usual features and varieties make it possible to classify these cranes in a table, which includes most of the models now in standard use.Los nuevos volúmenes de edificación, y los nuevos sistemas, como la prefabricación, han exigido el desarrollo de la maquinaria auxiliar correspondiente, con el fin de poder cubrir las necesidades de alimentación de la obra, reparto de materiales y elevación de cargas y piezas voluminosas. Entre las máquinas auxiliares que h a n obtenido una verdadera mayoría, de edad se encuentran las grúas-torre, fijas, móviles sobre neumáticos o carriles y trepadoras, las cuales, pese a ser conocidas y empleadas desde los años 10, han encontrado su verdadero campo de aplicación después de la segunda guerra mundial. Sus características más comunes respecto a elementos que constituyen la mayor parte de los modelos, permiten agruparlas en una tabla en la que quedan incluidas casi todas las de uso normal.

  6. Efficient spin-current injection in single-molecule magnet junctions

    Directory of Open Access Journals (Sweden)

    Haiqing Xie

    2018-01-01

    Full Text Available We study theoretically spin transport through a single-molecule magnet (SMM in the sequential and cotunneling regimes, where the SMM is weakly coupled to one ferromagnetic and one normal-metallic leads. By a master-equation approach, it is found that the spin polarization injected from the ferromagnetic lead is amplified and highly polarized spin-current can be generated, due to the exchange coupling between the transport electron and the anisotropic spin of the SMM. Moreover, the spin-current polarization can be tuned by the gate or bias voltage, and thus an efficient spin injection device based on the SMM is proposed in molecular spintronics.

  7. Efficient spin-current injection in single-molecule magnet junctions

    Science.gov (United States)

    Xie, Haiqing; Xu, Fuming; Jiao, Hujun; Wang, Qiang; Liang, J.-Q.

    2018-01-01

    We study theoretically spin transport through a single-molecule magnet (SMM) in the sequential and cotunneling regimes, where the SMM is weakly coupled to one ferromagnetic and one normal-metallic leads. By a master-equation approach, it is found that the spin polarization injected from the ferromagnetic lead is amplified and highly polarized spin-current can be generated, due to the exchange coupling between the transport electron and the anisotropic spin of the SMM. Moreover, the spin-current polarization can be tuned by the gate or bias voltage, and thus an efficient spin injection device based on the SMM is proposed in molecular spintronics.

  8. Synergetic effects of radiation stress and hot-carrier stress on the current gain of npn bipolar junction transistors

    International Nuclear Information System (INIS)

    Witczak, S.C.; Kosier, S.L.; Schrimpf, R.D.; Galloway, K.F.

    1994-01-01

    The combined effects of ionizing radiation and hot-carrier stress on the current gain of npn bipolar junction transistors were investigated. The analysis was carried out experimentally by examining the consequences of interchanging the order in which the two stress types were applied to identical transistors which were stressed to various levels of damage. The results indicate that the hot-carrier response of the transistor is improved by radiation damage, whereas hot-carrier damage has little effect on subsequent radiation stress. Characterization of the temporal progression of hot-carrier effects revealed that hot-carrier stress acts initially to reduce excess base current and improve current gain in irradiated transistors. PISCES simulations show that the magnitude of the peak electric-field within the emitter-base depletion region is reduced significantly by net positive oxide charges induced by radiation. The interaction of the two stress types is explained in a qualitative model based on the probability of hot-carrier injection determined by radiation damage and on the neutralization and compensation of radiation-induced positive oxide charges by injected electrons. The result imply that a bound on damage due to the combined stress types is achieved when hot-carrier stress precedes any irradiation

  9. Colossal X-Ray-Induced Persistent Photoconductivity in Current-Perpendicular-to-Plane Ferroelectric/Semiconductor Junctions

    KAUST Repository

    Hu, Weijin

    2017-12-07

    Persistent photoconductivity (PPC) is an intriguing physical phenomenon, where electric conduction is retained after the termination of electromagnetic radiation, which makes it appealing for applications in a wide range of optoelectronic devices. So far, PPC has been observed in bulk materials and thin-film structures, where the current flows in the plane, limiting the magnitude of the effect. Here using epitaxial Nb:SrTiO3/Sm0.1Bi0.9FeO3/Pt junctions with a current-perpendicular-to-plane geometry, a colossal X-ray-induced PPC (XPPC) is achieved with a magnitude of six orders. This PPC persists for days with negligible decay. Furthermore, the pristine insulating state could be fully recovered by thermal annealing for a few minutes. Based on the electric transport and microstructure analysis, this colossal XPPC effect is attributed to the X-ray-induced formation and ionization of oxygen vacancies, which drives nonvolatile modification of atomic configurations and results in the reduction of interfacial Schottky barriers. This mechanism differs from the conventional mechanism of photon-enhanced carrier density/mobility in the current-in-plane structures. With their persistent nature, such ferroelectric/semiconductor heterojunctions open a new route toward X-ray sensing and imaging applications.

  10. Interfacial spin-orbit splitting and current-driven spin torque in anisotropic tunnel junctions

    KAUST Repository

    Manchon, Aurelien

    2011-01-01

    be generated at the second order in SOI, even in the absence of an external spin polarizer. This torque possesses two components, one in plane and one perpendicular to the plane of rotation, that can induce either current-driven magnetization switching from

  11. Strong mechanically induced effects in DC current-biased suspended Josephson junctions

    Science.gov (United States)

    McDermott, Thomas; Deng, Hai-Yao; Isacsson, Andreas; Mariani, Eros

    2018-01-01

    Superconductivity is a result of quantum coherence at macroscopic scales. Two superconductors separated by a metallic or insulating weak link exhibit the AC Josephson effect: the conversion of a DC voltage bias into an AC supercurrent. This current may be used to activate mechanical oscillations in a suspended weak link. As the DC-voltage bias condition is remarkably difficult to achieve in experiments, here we analyze theoretically how the Josephson effect can be exploited to activate and detect mechanical oscillations in the experimentally relevant condition with purely DC current bias. We unveil how changing the strength of the electromechanical coupling results in two qualitatively different regimes showing dramatic effects of the oscillations on the DC-voltage characteristic of the device. These include the appearance of Shapiro-type plateaus for weak coupling and a sudden mechanically induced retrapping for strong coupling. Our predictions, measurable in state-of-the-art experimental setups, allow the determination of the frequency and quality factor of the resonator using DC only techniques.

  12. Current-voltage curves for molecular junctions computed using all-electron basis sets

    International Nuclear Information System (INIS)

    Bauschlicher, Charles W.; Lawson, John W.

    2006-01-01

    We present current-voltage (I-V) curves computed using all-electron basis sets on the conducting molecule. The all-electron results are very similar to previous results obtained using effective core potentials (ECP). A hybrid integration scheme is used that keeps the all-electron calculations cost competitive with respect to the ECP calculations. By neglecting the coupling of states to the contacts below a fixed energy cutoff, the density matrix for the core electrons can be evaluated analytically. The full density matrix is formed by adding this core contribution to the valence part that is evaluated numerically. Expanding the definition of the core in the all-electron calculations significantly reduces the computational effort and, up to biases of about 2 V, the results are very similar to those obtained using more rigorous approaches. The convergence of the I-V curves and transmission coefficients with respect to basis set is discussed. The addition of diffuse functions is critical in approaching basis set completeness

  13. No Change in Social Decision-Making Following Transcranial Direct Current Stimulation of the Right Temporoparietal Junction

    Directory of Open Access Journals (Sweden)

    Laura F. Blair-West

    2018-04-01

    Full Text Available The right temporoparietal junction (rTPJ is thought to play an important role in social cognition and pro-social decision-making. One way to explore this link is through the use of transcranial direct current stimulation (tDCS, a non-invasive brain stimulation method that is able to modulate cortical activity. The aim of this research was therefore to determine whether anodal tDCS to the rTPJ altered response to a social decision-making task. In this study, 34 healthy volunteers participated in a single-center, double-blinded, sham-controlled crossover design. Subjects received 20 min of active/sham anodal tDCS to the rTPJ before undertaking the Ultimatum Game (UG, a neuroeconomics paradigm in which participants are forced to choose between monetary reward and punishing an opponent's unfairness. Contrary to expectations, we found no significant difference between anodal and sham stimulation with regard to either the total number or reaction time of unfair offer rejections in the UG. This study draws attention to methodological issues in tDCS studies of the rTPJ, and highlights the complexity of social decision-making in the UG.

  14. No Change in Social Decision-Making Following Transcranial Direct Current Stimulation of the Right Temporoparietal Junction.

    Science.gov (United States)

    Blair-West, Laura F; Hoy, Kate E; Hall, Phillip J; Fitzgerald, Paul B; Fitzgibbon, Bernadette M

    2018-01-01

    The right temporoparietal junction (rTPJ) is thought to play an important role in social cognition and pro-social decision-making. One way to explore this link is through the use of transcranial direct current stimulation (tDCS), a non-invasive brain stimulation method that is able to modulate cortical activity. The aim of this research was therefore to determine whether anodal tDCS to the rTPJ altered response to a social decision-making task. In this study, 34 healthy volunteers participated in a single-center, double-blinded, sham-controlled crossover design. Subjects received 20 min of active/sham anodal tDCS to the rTPJ before undertaking the Ultimatum Game (UG), a neuroeconomics paradigm in which participants are forced to choose between monetary reward and punishing an opponent's unfairness. Contrary to expectations, we found no significant difference between anodal and sham stimulation with regard to either the total number or reaction time of unfair offer rejections in the UG. This study draws attention to methodological issues in tDCS studies of the rTPJ, and highlights the complexity of social decision-making in the UG.

  15. Grænsekrydsende ledelse

    DEFF Research Database (Denmark)

    Elmholdt, Claus Westergård; Ingerslev, Karen

    2013-01-01

    interessere sig for, hvordan de tænker, taler og handler på grænser. Ledere er, qua deres organisatoriske position, i særlig grad ansvarlige for at etablere grænsepraktikker, hvor grænser bliver til ’broer’ og ikke ’barrierer’ for samarbejde og innovation. Lykkes det ikke at gøre grænser til udviklingsforkant...

  16. Grøstl Addendum

    DEFF Research Database (Denmark)

    Gauravaram, Praveen; Knudsen, Lars R.; Matusiewicz, Krystian

    2009-01-01

    This document is an addendum to the submission document of Grøstl, which was selected for the second round of NIST’s SHA-3 competition [18]. We stress that we do not change the specification of Grøstl. In other words, Grøstl is defined exactly as specified in the original submission document [8]....

  17. Josephson junction arrays

    International Nuclear Information System (INIS)

    Bindslev Hansen, J.; Lindelof, P.E.

    1985-01-01

    In this review we intend to cover recent work involving arrays of Josephson junctions. The work on such arrays falls naturally into three main areas of interest: 1. Technical applications of Josephson junction arrays for high-frequency devices. 2. Experimental studies of 2-D model systems (Kosterlitz-Thouless phase transition, commensurate-incommensurate transition in frustrated (flux) lattices). 3. Investigations of phenomena associated with non-equilibrium superconductivity in and around Josephson junctions (with high current density). (orig./BUD)

  18. Susceptibility of CoFeB/AlOx/Co Magnetic Tunnel Junctions to Low-Frequency Alternating Current

    Directory of Open Access Journals (Sweden)

    Yuan-Tsung Chen

    2013-10-01

    Full Text Available This investigation studies CoFeB/AlOx/Co magnetic tunneling junction (MTJ in the magnetic field of a low-frequency alternating current, for various thicknesses of the barrier layer AlOx. The low-frequency alternate-current magnetic susceptibility (χac and phase angle (θ of the CoFeB/AlOx/Co MTJ are determined using an cac analyzer. The driving frequency ranges from 10 to 25,000 Hz. These multilayered MTJs are deposited on a silicon substrate using a DC and RF magnetron sputtering system. Barrier layer thicknesses are 22, 26, and 30 Å. The X-ray diffraction patterns (XRD include a main peak at 2θ = 44.7° from hexagonal close-packed (HCP Co with a highly (0002 textured structure, with AlOx and CoFeB as amorphous phases. The full width at half maximum (FWHM of the Co(0002 peak, decreases as the AlOx thickness increases; revealing that the Co layer becomes more crystalline with increasing thickness. χac result demonstrates that the optimal resonance frequency (fres that maximizes the χac value is 500 Hz. As the frequency increases to 1000 Hz, the susceptibility decreases rapidly. However, when the frequency increases over 1000 Hz, the susceptibility sharply declines, and almost closes to zero. The experimental results reveal that the mean optimal susceptibility is 1.87 at an AlOx barrier layer thickness of 30 Å because the Co(0002 texture induces magneto-anisotropy, which improves the indirect CoFeB and Co spin exchange-coupling strength and the χac value. The results concerning magnetism indicate that the magnetic characteristics are related to the crystallinity of Co.

  19. The Leakage Current Improvement of a Ni-Silicided SiGe/Si Junction Using a Si Cap Layer and the PAI Technique

    International Nuclear Information System (INIS)

    Chang Jian-Guang; Wu Chun-Bo; Ji Xiao-Li; Ma Hao-Wen; Yan Feng; Shi Yi; Zhang Rong

    2012-01-01

    We investigate the leakage current of ultra-shallow Ni-silicided SiGe/Si junctions for 45 nm CMOS technology using a Si cap layer and the pre-amorphization implantation (PAI) process. It is found that with the conventional Ni silicide method, the leakage current of a p + (SiGe)—n(Si) junction is large and attributed to band-to-band tunneling and the generation-recombination process. The two leakage contributors can be suppressed quite effectively when a Si cap layer is added in the Ni silicide method. The leakage reduction is about one order of magnitude and could be associated with the suppression of the agglomeration of the Ni germano-silicide film. In addition, the PAI process after the application of a Si cap layer has little effect on improving the junction leakage but reduces the sheet resistance of the silicide film. As a result, the novel Ni silicide method using a Si cap combined with PAI is a promising choice for SiGe junctions in advanced technology. (cross-disciplinary physics and related areas of science and technology)

  20. Equivalent Josephson junctions

    International Nuclear Information System (INIS)

    Boyadzhiev, T.L.; ); Semerdzhieva, E.G.; Shukrinov, Yu.M.; Fiziko-Tekhnicheskij Inst., Dushanbe

    2008-01-01

    The magnetic field dependences of critical current are numerically constructed for a long Josephson junction with a shunt- or resistor-type microscopic inhomogeneities and compared to the critical curve of a junction with exponentially varying width. The numerical results show that it is possible to replace the distributed inhomogeneity of a long Josephson junction by an inhomogeneity localized at one of its ends, which has certain technological advantages. It is also shown that the critical curves of junctions with exponentially varying width and inhomogeneities localized at the ends are unaffected by the mixed fluxon-antifluxon distributions of the magnetic flux [ru

  1. Ultrafast demagnetization enhancement in CoFeB/MgO/CoFeB magnetic tunneling junction driven by spin tunneling current.

    Science.gov (United States)

    He, Wei; Zhu, Tao; Zhang, Xiang-Qun; Yang, Hai-Tao; Cheng, Zhao-Hua

    2013-10-07

    The laser-induced ultrafast demagnetization of CoFeB/MgO/CoFeB magnetic tunneling junction is exploited by time-resolved magneto-optical Kerr effect (TRMOKE) for both the parallel state (P state) and the antiparallel state (AP state) of the magnetizations between two magnetic layers. It was observed that the demagnetization time is shorter and the magnitude of demagnetization is larger in the AP state than those in the P state. These behaviors are attributed to the ultrafast spin transfer between two CoFeB layers via the tunneling of hot electrons through the MgO barrier. Our observation indicates that ultrafast demagnetization can be engineered by the hot electrons tunneling current. It opens the door to manipulate the ultrafast spin current in magnetic tunneling junctions.

  2. Model of a tunneling current in a p-n junction based on armchair graphene nanoribbons - an Airy function approach and a transfer matrix method

    International Nuclear Information System (INIS)

    Suhendi, Endi; Syariati, Rifki; Noor, Fatimah A.; Khairurrijal; Kurniasih, Neny

    2014-01-01

    We modeled a tunneling current in a p-n junction based on armchair graphene nanoribbons (AGNRs) by using an Airy function approach (AFA) and a transfer matrix method (TMM). We used β-type AGNRs, in which its band gap energy and electron effective mass depends on its width as given by the extended Huckel theory. It was shown that the tunneling currents evaluated by employing the AFA are the same as those obtained under the TMM. Moreover, the calculated tunneling current was proportional to the voltage bias and inversely with temperature

  3. Electronic thermometry in tunable tunnel junction

    Science.gov (United States)

    Maksymovych, Petro

    2016-03-15

    A tunable tunnel junction thermometry circuit includes a variable width tunnel junction between a test object and a probe. The junction width is varied and a change in thermovoltage across the junction with respect to the change in distance across the junction is determined. Also, a change in biased current with respect to a change in distance across the junction is determined. A temperature gradient across the junction is determined based on a mathematical relationship between the temperature gradient, the change in thermovoltage with respect to distance and the change in biased current with respect to distance. Thermovoltage may be measured by nullifying a thermoelectric tunneling current with an applied voltage supply level. A piezoelectric actuator may modulate the probe, and thus the junction width, to vary thermovoltage and biased current across the junction. Lock-in amplifiers measure the derivatives of the thermovoltage and biased current modulated by varying junction width.

  4. Influence of the spatially inhomogeneous gap distribution on the quasiparticle current in c-axis junctions involving d-wave superconductors with charge density waves.

    Science.gov (United States)

    Ekino, T; Gabovich, A M; Suan Li, Mai; Szymczak, H; Voitenko, A I

    2016-11-09

    The quasiparticle tunnel current J(V) between the superconducting ab-planes along the c-axis and the corresponding conductance [Formula: see text] were calculated for symmetric junctions composed of disordered d-wave layered superconductors partially gapped by charge density waves (CDWs). Here, V is the voltage. Both the checkerboard and unidirectional CDWs were considered. It was shown that the spatial spread of the CDW-pairing strength substantially smears the peculiarities of G(V) appropriate to uniform superconductors. The resulting curves G(V) become very similar to those observed for a number of cuprates in intrinsic junctions, e.g. mesas. In particular, the influence of CDWs may explain the peak-dip-hump structures frequently found for high-T c oxides.

  5. Electron-beam-induced current measurements with applied bias provide insight to locally resolved acceptor concentrations at p-n junctions

    Directory of Open Access Journals (Sweden)

    D. Abou-Ras

    2015-07-01

    Full Text Available Electron-beam-induced current (EBIC measurements have been employed for the investigation of the local electrical properties existing at various types of electrical junctions during the past decades. In the standard configuration, the device under investigation is analyzed under short-circuit conditions. Further insight into the function of the electrical junction can be obtained when applying a bias voltage. The present work gives insight into how EBIC measurements at applied bias can be conducted at the submicrometer level, at the example of CuInSe2 solar cells. From the EBIC profiles acquired across ZnO/CdS/CuInSe2/Mo stacks exhibiting p-n junctions with different net doping densities in the CuInSe2 layers, values for the width of the space-charge region, w, were extracted. For all net doping densities, these values decreased with increasing applied voltage. Assuming a linear relationship between w2 and the applied voltage, the resulting net doping densities agreed well with the ones obtained by means of capacitance-voltage measurements.

  6. CrAs(0 0 1)/AlAs(0 0 1) heterogeneous junction as a spin current diode predicted by first-principles calculations

    International Nuclear Information System (INIS)

    Min, Y.; Yao, K.L.; Liu, Z.L.; Cheng, H.G.; Zhu, S.C.; Gao, G.Y.

    2009-01-01

    We report on first-principles calculations of spin-dependent quantum transport in a CrAs(0 0 1)/AlAs(0 0 1) heterogeneous junction and predict a strong diode effect of charge and spin current. The minority spin current is absolutely inhibited when the bias voltage is applied to the terminals of both CrAs and AlAs. The majority spin current is inhibited when the bias voltage is applied to the terminal of CrAs and 'relaxed' when the bias voltage is applied to the terminal of AlAs. The charge and spin current diode are promising for reprogrammable logic applications in the field of spintronics

  7. Modulation of neural activity in the temporoparietal junction with transcranial direct current stimulation changes the role of beliefs in moral judgment

    Directory of Open Access Journals (Sweden)

    Hang eYe

    2015-12-01

    Full Text Available Judgments about whether an action is morally right or wrong typically depend on our capacity to infer the actor’s beliefs and the outcomes of the action. Prior neuroimaging studies have found that mental state (e.g., beliefs, intentions attribution for moral judgment involves a complex neural network that includes the temporoparietal junction (TPJ. However, neuroimaging studies cannot demonstrate a direct causal relationship between the activity of this brain region and mental state attribution for moral judgment. In the current study, we used transcranial direct current stimulation (tDCS to transiently alter neural activity in the TPJ. The participants were randomly assigned to one of three stimulation treatments (right anodal/left cathodal tDCS, left anodal/right cathodal tDCS, or sham stimulation. Each participant was required to complete two similar tasks of moral judgment before receiving tDCS and after receiving tDCS. We studied whether tDCS to the TPJ altered mental state attribution for moral judgment. The results indicated that restraining the activity of the right temporoparietal junction (RTPJ or the left the temporoparietal junction (LTPJ decreased the role of beliefs in moral judgments and led to an increase in the dependence of the participants’ moral judgments on the action’s consequences. We also found that the participants exhibited reduced reaction times both in the cases of intentional harms and attempted harms after receiving right cathodal/left anodal tDCS to the TPJ. These findings inform and extend the current neural models of moral judgment and moral development in typically developing people and in individuals with neurodevelopmental disorders such as autism.

  8. Radiation effects on the current-voltage and capacitance-voltage characteristics of advanced p-n junction diodes surrounded by shallow trench isolation

    International Nuclear Information System (INIS)

    Poyai, A.; Simoen, E.; Claeys, C.; Hayama, K.; Kobayashi, K.; Ohyama, H.

    2002-01-01

    This paper investigates the impact of 20 MeV proton irradiation on the current-voltage (I-V) and capacitance-voltage (C-V) characteristics of different geometry n + -p-well junction diodes surrounded by shallow trench isolation and processed in a 0.18 μm CMOS technology. From I-V characteristics, a higher current damage coefficient was found for the bulk than for the peripheral component. The radiation-induced boron de-activation resulted in a lowering of the p-well doping, which has been derived from high-frequency C-V measurements. This was confirmed by deep level transient spectroscopy (DLTS) analysis, revealing the presence of interstitial boron related radiation defects. As will be demonstrated for the bulk leakage-current damage coefficient, the electric field enhanced generation rate of charge carriers and the radiation-induced boron de-activation should be accounted for properly

  9. Analysis of Schottky Barrier Parameters and Current Transport Properties of V/p-Type GaN Schottky Junction at Low Temperatures

    Science.gov (United States)

    Asha, B.; Harsha, Cirandur Sri; Padma, R.; Rajagopal Reddy, V.

    2018-05-01

    The electrical characteristics of a V/p-GaN Schottky junction have been investigated by current-voltage (I-V) and capacitance-voltage (C-V) characteristics under the assumption of the thermionic emission (TE) theory in the temperature range of 120-280 K with steps of 40 K. The zero-bias barrier height (ΦB0), ideality factor (n), flat-band barrier height (ΦBF) and series resistance (R S) values were evaluated and were found to be strongly temperature dependent. The results revealed that the ΦB0 values increase, whereas n, ΦFB and R S values decrease, with increasing temperature. Using the conventional Richardson plot, the mean barrier height (0.39 eV) and Richardson constant (8.10 × 10-10 Acm-2 K-2) were attained. The barrier height inhomogeneities were demonstrated by assuming a Gaussian distribution function. The interface state density (N SS) values were found to decrease with increasing temperature. The reverse leakage current mechanism of the V/p-GaN Schottky junction was found to be governed by Poole-Frenkel emission at all temperatures.

  10. Estimation of conduction and displacement currents on p-n-junction in electromagnetic superhigh-frequency field

    International Nuclear Information System (INIS)

    Shamirzaev, S.Kh.; Dadamirzaev, M.G.; Gulyamov, G.; Gulyamov, A.G.

    2009-01-01

    Current generated in semiconductor diode that is in variable field is shown to define only by convection current, but the average value of displacement current is always zero and has not influence on current, outgoing from diode. This conclusion explains an origin of generated currents in different diode in electromagnetic field. The formula is found out allowing one to calculate the diode current with any nonlinear feature. (authors)

  11. Current transport and electronic states in a,b-axis-oriented YBa2Cu3O7/PrBa2Cu3O7/YBa2Cu3O7 sandwich-type junctions

    International Nuclear Information System (INIS)

    Yoshida, J.; Nagano, T.; Hashimoto, T.

    1996-01-01

    Precise measurement of the temperature and voltage dependence of junction conductance has been carried out for a,b-axis-oriented YBa 2 Cu 3 O 7 /PrBa 2 Cu 3 O 7 /YBa 2 Cu 3 O 7 sandwich-type junctions to investigate the possible origin of Josephson coupling in these junctions. Regardless of the presence or absence of the Josephson effect, most of the junctions exhibited a dip in conductance around zero voltage in their dI/dV profiles at low temperatures. This dI/dV anomaly was attributed to the existence of a minimum in the density of states due to electron-electron interaction in disordered metals in the vicinity of a tunneling barrier within the junctions. The complex temperature dependence of junction conductance was reproduced well by a theoretical model in which both tunneling conduction paths and variable range hopping paths were assumed to exist within the PrBa 2 Cu 3 O 7 barrier layer. No definite evidence of current transport through a small number of localized levels or a metallic conduction path in PrBa 2 Cu 3 O 7 has been confirmed, even for junctions with a 20-nm-thick barrier layer. copyright 1996 The American Physical Society

  12. Hydronephrosis in the course of ureteropelvic junction obstruction: An underestimated problem? Current opinions on the pathogenesis, diagnosis and treatment.

    Science.gov (United States)

    Krajewski, Wojciech; Wojciechowska, Joanna; Dembowski, Janusz; Zdrojowy, Romuald; Szydełko, Tomasz

    2017-08-01

    Ureteropelvic junction obstruction (UPJO) causes a reduction in the urine flow from the renal pelvis into the ureter. Untreated UPJO may cause hydronephrosis, chronic infection or urolithiasis and will often result in progressive deterioration of renal function. Most cases of UPJO are congenital; however, the disease can be clinically silent until adulthood. Other causes, both intrinsic and extrinsic, are acquired and include urolithiasis, post-operative/inflammatory/ischemic stricture, fibroepithelial polyps, adhesions and malignancy. In the past, the most frequent symptom of UPJO in neonates and infants was a palpable flank mass. Nowadays, thanks to the widespread use of maternal and prenatal ultrasound examinations, asymptomatic hydronephrosis is diagnosed very early. In adults and older children symptoms may include intermittent abdominal or flank pain, nausea, vomiting and hematuria. In addition to high specificity and sensitivity in detecting UPJO, modern technologically advanced equipment such as ultrasound, magnetic resonance imaging and computed tomography provides a lot of information about the function of the affected kidney and the anatomy of the surrounding tissues. Treatment options for UPJO include a wide spectrum of approaches, from active surveillance or minimally invasive endourologic techniques to open, laparoscopic or robotic pyeloplasty. The main goal of therapy is to relieve symptoms and maintain or improve renal function, but it is difficult to define treatment success after UPJO therapy.

  13. Fast Low-Current Spin-Orbit-Torque Switching of Magnetic Tunnel Junctions through Atomic Modifications of the Free-Layer Interfaces

    Science.gov (United States)

    Shi, Shengjie; Ou, Yongxi; Aradhya, S. V.; Ralph, D. C.; Buhrman, R. A.

    2018-01-01

    Future applications of spin-orbit torque will require new mechanisms to improve the efficiency of switching nanoscale magnetic tunnel junctions (MTJs), while also controlling the magnetic dynamics to achieve fast nanosecond-scale performance with low-write-error rates. Here, we demonstrate a strategy to simultaneously enhance the interfacial magnetic anisotropy energy and suppress interfacial spin-memory loss by introducing subatomic and monatomic layers of Hf at the top and bottom interfaces of the ferromagnetic free layer of an in-plane magnetized three-terminal MTJ device. When combined with a β -W spin Hall channel that generates spin-orbit torque, the cumulative effect is a switching current density of 5.4 ×106 A /cm2 .

  14. Tunneling current in HfO2 and Hf0.5Zr0.5O2-based ferroelectric tunnel junction

    Science.gov (United States)

    Dong, Zhipeng; Cao, Xi; Wu, Tong; Guo, Jing

    2018-03-01

    Ferroelectric tunnel junctions (FTJs) have been intensively explored for future low power data storage and information processing applications. Among various ferroelectric (FE) materials studied, HfO2 and H0.5Zr0.5O2 (HZO) have the advantage of CMOS process compatibility. The validity of the simple effective mass approximation, for describing the tunneling process in these materials, is examined by computing the complex band structure from ab initio simulations. The results show that the simple effective mass approximation is insufficient to describe the tunneling current in HfO2 and HZO materials, and quantitative accurate descriptions of the complex band structures are indispensable for calculation of the tunneling current. A compact k . p Hamiltonian is parameterized to and validated by ab initio complex band structures, which provides a method for efficiently and accurately computing the tunneling current in HfO2 and HZO. The device characteristics of a metal/FE/metal structure and a metal/FE/semiconductor (M-F-S) structure are investigated by using the non-equilibrium Green's function formalism with the parameterized effective Hamiltonian. The result shows that the M-F-S structure offers a larger resistance window due to an extra barrier in the semiconductor region at off-state. A FTJ utilizing M-F-S structure is beneficial for memory design.

  15. How to control spin-Seebeck current in a metal-quantum dot-magnetic insulator junction

    Science.gov (United States)

    Fu, Hua-Hua; Gu, Lei; Wu, Ruqian

    The control of the spin-Seebeck current is still a challenging task for the development of spin caloritronic devices. Here, we construct a spin-Seebeck device by inserting a quantum dot (QD) between the metal lead and magnetic insulator. Using the slave-particle approach and noncrossing approximation, we find that the spin-Seebeck effect increases significantly when the energy level of the QD locates near the Fermi level of the metal lead due to the enhancement of spin flipping and occurrences of quantum resonance. Since this can be easily realized by applying a gate voltage in experiments, the spin-Seebeck device proposed here can also work as a thermovoltaic transistor. Moreover, the optimal correlation strength and the energy level position of the QD are discussed to maximize the spin-Seebeck current as required for applications in controllable spin caloritronic devices.

  16. Dynamics of pi-junction interferometer circuits

    DEFF Research Database (Denmark)

    Kornkev, V.K.; Mozhaev, P.B.; Borisenko, I.V.

    2002-01-01

    The pi-junction superconducting circuit dynamics was studied by means of numerical simulation technique. Parallel arrays consisting of Josephson junctions of both 0- and pi-type were studied as a model of high-T-c grain-boundary Josephson junction. The array dynamics and the critical current depe...

  17. Grønne, kommunale regnskaber

    DEFF Research Database (Denmark)

    Kristiansen, K.

    Hvad er et grønt, kommunalt regnskab? Hvordan får man miljøhjulet til at dreje? Hvorfor lave et grønt regnskab? Håndbog i grønne, kommunale regnskaber viser, hvordan man nemt kan lave et grønt regnskab, som er tilpasset forholdene i den enkelte kommune og som kan bruges i det lokale Agenda 21...

  18. Populismens grænser

    DEFF Research Database (Denmark)

    Siim, Birte

    2010-01-01

    I den forløbne uge har 'burkasagen' og sagen om kønsopdelte grupper på Blågårdsskolen atter udfordret grænserne for det danske demokratis rummelighed. De to sager har vakt stor opsigt i pressen og har fremkaldt voldsomme udtalelser både fra repræsentanter for regeringen, dens støtteparti og fra t...

  19. Gr.

    Directory of Open Access Journals (Sweden)

    Václav Blažek

    1984-12-01

    Full Text Available The-Greek word   (Archilochos, Aristophanes, Plato, Aristoteles, Dor. ní&anos: "ape", ní-&wv, -wvoi; "little ape" (Pindaros does not have any convincible Indo-European etymology. The old comparison with Lat. foedus "beastly, foul" etc. is obviously improbable and the word is rather bor­rowed from an unknown source.

  20. mKikGR, a monomeric photoswitchable fluorescent protein.

    Directory of Open Access Journals (Sweden)

    Satoshi Habuchi

    Full Text Available The recent demonstration and utilization of fluorescent proteins whose fluorescence can be switched on and off has greatly expanded the toolkit of molecular and cell biology. These photoswitchable proteins have facilitated the characterization of specifically tagged molecular species in the cell and have enabled fluorescence imaging of intracellular structures with a resolution far below the classical diffraction limit of light. Applications are limited, however, by the fast photobleaching, slow photoswitching, and oligomerization typical for photoswitchable proteins currently available. Here, we report the molecular cloning and spectroscopic characterization of mKikGR, a monomeric version of the previously reported KikGR that displays high photostability and switching rates. Furthermore, we present single-molecule imaging experiments that demonstrate that individual mKikGR proteins can be localized with a precision of better than 10 nanometers, suggesting their suitability for super-resolution imaging.

  1. Ferromagnetic Josephson Junctions for Cryogenic Memory

    Science.gov (United States)

    Niedzielski, Bethany M.; Gingrich, Eric C.; Khasawneh, Mazin A.; Loloee, Reza; Pratt, William P., Jr.; Birge, Norman O.

    2015-03-01

    Josephson junctions containing ferromagnetic materials are of interest for both scientific and technological purposes. In principle, either the amplitude of the critical current or superconducting phase shift across the junction can be controlled by the relative magnetization directions of the ferromagnetic layers in the junction. Our approach concentrates on phase control utilizing two junctions in a SQUID geometry. We will report on efforts to control the phase of junctions carrying either spin-singlet or spin-triplet supercurrent for cryogenic memory applications. Supported by Northorp Grumman Corporation and by IARPA under SPAWAR Contract N66001-12-C-2017.

  2. Method of manufacturing Josephson junction integrated circuits

    International Nuclear Information System (INIS)

    Jillie, D.W. Jr.; Smith, L.N.

    1985-01-01

    Josephson junction integrated circuits of the current injection type and magnetically controlled type utilize a superconductive layer that forms both Josephson junction electrode for the Josephson junction devices on the integrated circuit as well as a ground plane for the integrated circuit. Large area Josephson junctions are utilized for effecting contact to lower superconductive layers and islands are formed in superconductive layers to provide isolation between the groudplane function and the Josephson junction electrode function as well as to effect crossovers. A superconductor-barrier-superconductor trilayer patterned by local anodization is also utilized with additional layers formed thereover. Methods of manufacturing the embodiments of the invention are disclosed

  3. Autism-relevant traits interact with temporoparietal junction stimulation effects on social cognition: a high-definition transcranial direct current stimulation and electroencephalography study.

    Science.gov (United States)

    Donaldson, Peter H; Kirkovski, Melissa; Rinehart, Nicole J; Enticott, Peter G

    2018-03-01

    The temporoparietal junction (TPJ) is implicated in mental and emotional state attribution, processes associated with autism-relevant traits. Transcranial direct current stimulation (tDCS) to the TPJ can influence social-cognitive performance. However, associations with electrophysiology and autism-relevant traits remain relatively unexamined. This study had two aims: first, exploring links between Autism-Spectrum Quotient (AQ) scores and social-cognitive performance; second, examining interactions between AQ scores and high-definition-tDCS (HD-tDCS) applied to the right TPJ in terms of mental/emotional state attribution and neurophysiological outcomes. Fifty-three participants completed mental/emotional state attribution tasks before and after HD-tDCS. Pre-stimulation mental state attribution accuracy was reduced in participants with higher AQ Switching scores. Cathodal stimulation was associated with reduced emotion attribution performance in participants with higher AQ Switching and AQ Social scores (the latter at trend-level). Anodal stimulation more frequently interacted with AQ Social scores in terms of neurophysiology, in particular regarding reduced delta power in the left compared to right TPJ, and trend-level positive interactions with P100 and P300 latencies during the emotion recognition task. Elements of attention/switching (AQ Switching) may subserve or underpin elements of social cognition (AQ Social), and cathodal and anodal stimulation may have differing effects depending on trait levels in these domains. This study makes an important and original contribution in terms of increasing understanding of how such trait-level variation might interact with the effects of tDCS and also extending previous studies with regard to understanding potential roles of the rTPJ in both attention and social cognition and how autism-relevant traits might influence TPJ function. © 2017 Federation of European Neuroscience Societies and John Wiley & Sons Ltd.

  4. Josephson junctions with ferromagnetic interlayer

    International Nuclear Information System (INIS)

    Wild, Georg Hermann

    2012-01-01

    We report on the fabrication of superconductor/insulator/ferromagnetic metal/superconductor (Nb/AlO x /Pd 0.82 Ni 0.18 /Nb) Josephson junctions (SIFS JJs) with high critical current densities, large normal resistance times area products, and high quality factors. For these junctions, a transition from 0- to π-coupling is observed for a thickness d F =6 nm of the ferromagnetic Pd 0.82 Ni 0.18 interlayer. The magnetic field dependence of the critical current of the junctions demonstrates good spatial homogeneity of the tunneling barrier and ferromagnetic interlayer. Magnetic characterization shows that the Pd 0.82 Ni 0.18 has an out-of-plane anisotropy and large saturation magnetization indicating negligible dead layers at the interfaces. A careful analysis of Fiske modes up to about 400 GHz provides valuable information on the junction quality factor and the relevant damping mechanisms. Whereas losses due to quasiparticle tunneling dominate at low frequencies, at high frequencies the damping is explained by the finite surface resistance of the junction electrodes. High quality factors of up to 30 around 200 GHz have been achieved. They allow to study the junction dynamics, in particular the switching probability from the zero-voltage into the voltage state with and without microwave irradiation. The experiments with microwave irradiation are well explained within semi-classical models and numerical simulations. In contrast, at mK temperature the switching dynamics without applied microwaves clearly shows secondary quantum effects. Here, we could observe for the first time macroscopic quantum tunneling in Josephson junctions with a ferromagnetic interlayer. This observation excludes fluctuations of the critical current as a consequence of an unstable magnetic domain structure of the ferromagnetic interlayer and affirms the suitability of SIFS Josephson junctions for quantum information processing.

  5. Josephson junctions with ferromagnetic interlayer

    Energy Technology Data Exchange (ETDEWEB)

    Wild, Georg Hermann

    2012-03-04

    We report on the fabrication of superconductor/insulator/ferromagnetic metal/superconductor (Nb/AlO{sub x}/Pd{sub 0.82}Ni{sub 0.18}/Nb) Josephson junctions (SIFS JJs) with high critical current densities, large normal resistance times area products, and high quality factors. For these junctions, a transition from 0- to {pi}-coupling is observed for a thickness d{sub F}=6 nm of the ferromagnetic Pd{sub 0.82}Ni{sub 0.18} interlayer. The magnetic field dependence of the critical current of the junctions demonstrates good spatial homogeneity of the tunneling barrier and ferromagnetic interlayer. Magnetic characterization shows that the Pd{sub 0.82}Ni{sub 0.18} has an out-of-plane anisotropy and large saturation magnetization indicating negligible dead layers at the interfaces. A careful analysis of Fiske modes up to about 400 GHz provides valuable information on the junction quality factor and the relevant damping mechanisms. Whereas losses due to quasiparticle tunneling dominate at low frequencies, at high frequencies the damping is explained by the finite surface resistance of the junction electrodes. High quality factors of up to 30 around 200 GHz have been achieved. They allow to study the junction dynamics, in particular the switching probability from the zero-voltage into the voltage state with and without microwave irradiation. The experiments with microwave irradiation are well explained within semi-classical models and numerical simulations. In contrast, at mK temperature the switching dynamics without applied microwaves clearly shows secondary quantum effects. Here, we could observe for the first time macroscopic quantum tunneling in Josephson junctions with a ferromagnetic interlayer. This observation excludes fluctuations of the critical current as a consequence of an unstable magnetic domain structure of the ferromagnetic interlayer and affirms the suitability of SIFS Josephson junctions for quantum information processing.

  6. Impaired spermatogenesis and gr/gr deletions related to Y chromosome haplogroups in Korean men.

    Directory of Open Access Journals (Sweden)

    Jin Choi

    Full Text Available Microdeletion of the Azoospermia Factor (AZF regions in Y chromosome is a well-known genetic cause of male infertility resulting from spermatogenetic impairment. However, the partial deletions of AZFc region related to spermatogenetic impairment are controversial. In this study, we characterized partial deletion of AZFc region in Korean patients with spermatogenetic impairment and assessed whether the DAZ and CDY1 contributes to the phenotype in patients with gr/gr deletions. Total of 377 patients with azoo-/oligozoospermia and 217 controls were analyzed using multiplex polymerase chain reaction (PCR, analysis of DAZ-CDY1 sequence family variants (SFVs, and quantitative fluorescent (QF-PCR. Of the 377 men with impaired spermatogenesis, 59 cases (15.6% had partial AZFc deletions, including 32 gr/gr (8.5%, 22 b2/b3 (5.8%, four b1/b3 (1.1% and one b3/b4 (0.3% deletion. In comparison, 14 of 217 normozoospermic controls (6.5% had partial AZFc deletions, including five gr/gr (2.3% and nine b2/b3 (4.1% deletions. The frequency of gr/gr deletions was significantly higher in the azoo-/oligozoospermic group than in the normozoospermic control group (p = 0.003; OR = 3.933; 95% CI = 1.509-10.250. Concerning Y haplogroup, we observed no significant differences in the frequency of gr/gr deletions between the case and the control groups in the YAP+ lineages, while gr/gr deletion were significantly higher in azoo-/oligozoospermia than normozoospermia in the YAP- lineage (p = 0.004; OR = 6.341; 95% CI = 1.472-27.312. Our data suggested that gr/gr deletion is associated with impaired spermatogenesis in Koreans with YAP- lineage, regardless of the gr/gr subtypes.

  7. Currents on Grassmann algebras

    International Nuclear Information System (INIS)

    Coquereaux, R.; Ragoucy, E.

    1993-09-01

    Currents are defined on a Grassmann algebra Gr(N) with N generators as distributions on its exterior algebra (using the symmetric wedge product). The currents are interpreted in terms of Z 2 -graded Hochschild cohomology and closed currents in terms of cyclic cocycles (they are particular multilinear forms on Gr(N)). An explicit construction of the vector space of closed currents of degree p on Gr(N) is given by using Berezin integration. (authors). 10 refs

  8. Harmonic synchronization in resistively coupled Josephson junctions

    International Nuclear Information System (INIS)

    Blackburn, J.A.; Gronbech-Jensen, N.; Smith, H.J.T.

    1994-01-01

    The oscillations of two resistively coupled Josephson junctions biased only by a single dc current source are shown to lock harmonically in a 1:2 mode over a significant range of bias current, even when the junctions are identical. The dependence of this locking on both junction and coupling parameters is examined, and it is found that, for this particular two-junction configuration, 1:1 locking can never occur, and also that a minimum coupling coefficient is needed to support harmonic locking. Some issues related to subharmonic locking are also discussed

  9. Computing Gröbner fans

    DEFF Research Database (Denmark)

    Fukuda, K.; Jensen, Anders Nedergaard; Thomas, R.R.

    2005-01-01

    This paper presents algorithms for computing the Gröbner fan of an arbitrary polynomial ideal. The computation involves enumeration of all reduced Gröbner bases of the ideal. Our algorithms are based on a uniform definition of the Gröbner fan that applies to both homogeneous and non......-homogeneous ideals and a proof that this object is a polyhedral complex. We show that the cells of a Gröbner fan can easily be oriented acyclically and with a unique sink, allowing their enumeration by the memory-less reverse search procedure. The significance of this follows from the fact that Gröbner fans...... are not always normal fans of polyhedra in which case reverse search applies automatically. Computational results using our implementation of these algorithms in the software package Gfan are included....

  10. Impact of fluorine co-implantation on B deactivation and leakage currents in low and high energy Ge preamorphised p+n shallow junctions

    International Nuclear Information System (INIS)

    Girginoudi, D.; Tsiarapas, C.

    2008-01-01

    The impact of fluorine (F) co-implantation on boron (B) deactivation and B TED, as well as on the I-V characteristics of p + n shallow junctions, have been studied for low (10 keV) and high (70 keV) energy Ge preamorphised (PAI) n-type Si samples, that were annealed at 600 deg. C and 700 deg. C. Transmission electron microscopy revealed the existence of defects and dislocation loops (DLs) in the EOR region. It has been found that F stabilizes the EOR defect population via the increase of EOR defect density and the percentage of the stable DLs. This phenomenon is more pronounced when the preamorphisation is shallow (10 keV Ge energy). SIMS and sheet resistance measurements showed the formation of BICs, which implies B deactivation and increased B TED, especially in the shallow PAI samples and at the 700 deg. C annealing temperature. The role of F on B deactivation is multiplex: in the 70 keV PAI samples, and at 600 deg. C annealing temperature, F forms clusters with B causing further B deactivation. In the case of 700 deg. C annealing temperature, F probably forms fluorine-vacancy (F-V) clusters that trap silicon interstitials (Is), thus reducing the possibility of forming BICs and, therefore, resulting in B re-activation and suppression of B TED. Conversely, in the 10-keV PAI samples, and irrespective of the annealing temperature, F improves significantly the sheet resistance, and we suggest that this is a result of the contribution of two physical mechanisms: in the EOR region, F is trapped into DLs, which release less Is than other types of defects. In the amorphous part of Si, there are probably F-V clusters that trap the Is released from the EOR region. Although F in most cases improves B deactivation, it increases the reverse leakage currents, probably due to the stabilization of the EOR defects. As regards the carrier-transport mechanisms, it has been found that the dominant mechanism is the generation-recombination process under forward bias as well as under

  11. delta-biased Josephson tunnel junctions

    DEFF Research Database (Denmark)

    Monaco, R.; Mygind, Jesper; Koshelet, V.

    2010-01-01

    Abstract: The behavior of a long Josephson tunnel junction drastically depends on the distribution of the dc bias current. We investigate the case in which the bias current is fed in the central point of a one-dimensional junction. Such junction configuration has been recently used to detect...... the persistent currents circulating in a superconducting loop. Analytical and numerical results indicate that the presence of fractional vortices leads to remarkable differences from the conventional case of uniformly distributed dc bias current. The theoretical findings are supported by detailed measurements...

  12. The Dissolution of Double Holliday Junctions

    DEFF Research Database (Denmark)

    Bizard, Anna H; Hickson, Ian D

    2014-01-01

    as "double Holliday junction dissolution." This reaction requires the cooperative action of a so-called "dissolvasome" comprising a Holliday junction branch migration enzyme (Sgs1/BLM RecQ helicase) and a type IA topoisomerase (Top3/TopoIIIα) in complex with its OB (oligonucleotide/oligosaccharide binding......Double Holliday junctions (dHJS) are important intermediates of homologous recombination. The separate junctions can each be cleaved by DNA structure-selective endonucleases known as Holliday junction resolvases. Alternatively, double Holliday junctions can be processed by a reaction known......) fold containing accessory factor (Rmi1). This review details our current knowledge of the dissolution process and the players involved in catalyzing this mechanistically complex means of completing homologous recombination reactions....

  13. [Die Gründung...] / Anders Henriksson

    Index Scriptorium Estoniae

    Henriksson, Anders

    2004-01-01

    Rets.: Karsten Brüggemann. Die Gründung der Republik Estland und das Ende des "Einen und unteilbaren Russland" : die Petrograder Front des Russischen Bürgerkrieges, 1918-1920. Wiesbaden : Harrassowitz, 2002

  14. Cavity syncronisation of underdamped Josephson junction arrays

    DEFF Research Database (Denmark)

    Barbara, P.; Filatrella, G.; Lobb, C.

    2003-01-01

    the junctions in the array and an electromagnetic cavity. Here we show that a model of a one-dimensional array of Josephson junctions coupled to a resonator can produce many features of the coherent be havior above threshold, including coherent radiation of power and the shape of the array current...

  15. Grænser, barrierer og broer

    DEFF Research Database (Denmark)

    Nortvig, Anne Mette; Christiansen, René B.; Karlsen, Asgjerd Vea

    2015-01-01

    ledelsesmæssige muligheder for, at skoleklasser i grundskolen kan arbejde sammen og lære på tværs af de tre landes grænser. Nogle af de helt overordnede mål for projektet har således været at udvikle grænseoverskridende undervisningsmodeller i Norden, der kunne mindske de mentale og praktiske barrierer for en...

  16. Grænsestrategier og transnationale relationer

    DEFF Research Database (Denmark)

    Eilenberg, Michael

    2006-01-01

    I denne artikel ønsker jeg at undersøge betydningen af transnationale etniske relationer for den indonesiske ibanske befolkning, der er bosat i grænselandet, mellem den malaysiske delstat, Sarawak og den indonesiske provins, Vest Kalimantan. Jeg vil diskutere hvordan transnationale etniske...... disse processer, som de kommer til udtryk i form af bl.a. arbejdsmigration på tværs af den internationale grænse til Sarawak, Malaysia. Udgivelsesdato: Juli...

  17. Branding af grønne byer

    DEFF Research Database (Denmark)

    Konijnendijk, Cecil Cornelis; Petersen, Karen Sejr

    2010-01-01

    Det grønne - byens parker og natur - kan være med til at skabe en attraktiv by, som har stærk identitet og brand, både for omverden og byens egne borgere.......Det grønne - byens parker og natur - kan være med til at skabe en attraktiv by, som har stærk identitet og brand, både for omverden og byens egne borgere....

  18. MathGR: a tensor and GR computation package to keep it simple

    OpenAIRE

    Wang, Yi

    2013-01-01

    We introduce the MathGR package, written in Mathematica. The package can manipulate tensor and GR calculations with either abstract or explicit indices, simplify tensors with permutational symmetries, decompose tensors from abstract indices to partially or completely explicit indices and convert partial derivatives into total derivatives. Frequently used GR tensors and a model of FRW universe with ADM type perturbations are predefined. The package is built around the philosophy to "keep it si...

  19. Common features of a vortex structure in long exponentially shaped Josephson junctions and Josephson junctions with inhomogeneities

    International Nuclear Information System (INIS)

    Boyadjiev, T.L.; Semerdjieva, E.G.; Shukrinov, Yu.M.

    2007-01-01

    We study the vortex structure in three different models of the long Josephson junction: the exponentially shaped Josephson junction and the Josephson junctions with the resistor and the shunt inhomogeneities in the barrier layer. For these three models the critical curves 'critical current-magnetic field' are numerically constructed. We develop the idea of the equivalence of the exponentially shaped Josephson junction and the rectangular junction with the distributed inhomogeneity and demonstrate that at some parameters of the shunt and the resistor inhomogeneities in the ends of the junction the corresponding critical curves are very close to the exponentially shaped one

  20. Molecular electronic junction transport

    DEFF Research Database (Denmark)

    Solomon, Gemma C.; Herrmann, Carmen; Ratner, Mark

    2012-01-01

    Whenasinglemolecule,oracollectionofmolecules,isplacedbetween two electrodes and voltage is applied, one has a molecular transport junction. We discuss such junctions, their properties, their description, and some of their applications. The discussion is qualitative rather than quantitative, and f...

  1. Macroscopic quantum tunneling in Josephson tunnel junctions and Coulomb blockade in single small tunnel junctions

    International Nuclear Information System (INIS)

    Cleland, A.N.

    1991-04-01

    Experiments investigating the process of macroscopic quantum tunneling in a moderately-damped, resistively shunted, Josephson junction are described, followed by a discussion of experiments performed on very small capacitance normal-metal tunnel junctions. The experiments on the resistively-shunted Josephson junction were designed to investigate a quantum process, that of the tunneling of the Josephson phase variable under a potential barrier, in a system in which dissipation plays a major role in the dynamics of motion. All the parameters of the junction were measured using the classical phenomena of thermal activation and resonant activation. Theoretical predictions are compared with the experimental results, showing good agreement with no adjustable parameters; the tunneling rate in the moderately damped (Q ∼ 1) junction is seen to be reduced by a factor of 300 from that predicted for an undamped junction. The phase is seen to be a good quantum-mechanical variable. The experiments on small capacitance tunnel junctions extend the measurements on the larger-area Josephson junctions from the region in which the phase variable has a fairly well-defined value, i.e. its wavefunction has a narrow width, to the region where its value is almost completely unknown. The charge on the junction becomes well-defined and is predicted to quantize the current through the junction, giving rise to the Coulomb blockade at low bias. I present the first clear observation of the Coulomb blockade in single junctions. The electrical environment of the tunnel junction, however, strongly affects the behavior of the junction: higher resistance leads are observed to greatly sharpen the Coulomb blockade over that seen with lower resistance leads. I present theoretical descriptions of how the environment influences the junctions; comparisons with the experimental results are in reasonable agreement

  2. Valley dependent transport in graphene L junction

    Science.gov (United States)

    Chan, K. S.

    2018-05-01

    We studied the valley dependent transport in graphene L junctions connecting an armchair lead and a zigzag lead. The junction can be used in valleytronic devices and circuits. Electrons injected from the armchair lead into the junction is not valley polarized, but they can become valley polarized in the zigzag lead. There are Fermi energies, where the current in the zigzag lead is highly valley polarized and the junction is an efficient generator of valley polarized current. The features of the valley polarized current depend sensitively on the widths of the two leads, as well as the number of dimers in the armchair lead, because this number has a sensitive effect on the band structure of the armchair lead. When an external potential is applied to the junction, the energy range with high valley polarization is enlarged enhancing its function as a generator of highly valley polarized current. The scaling behavior found in other graphene devices is also found in L junctions, which means that the results presented here can be extended to junctions with larger dimensions after appropriate scaling of the energy.

  3. Planar Josephson tunnel junctions in a transverse magnetic field

    DEFF Research Database (Denmark)

    Monacoa, R.; Aarøe, Morten; Mygind, Jesper

    2007-01-01

    demagnetization effects imposed by the tunnel barrier and electrodes geometry are important. Measurements of the junction critical current versus magnetic field in planar Nb-based high-quality junctions with different geometry, size, and critical current density show that it is advantageous to use a transverse......Traditionally, since the discovery of the Josephson effect in 1962, the magnetic diffraction pattern of planar Josephson tunnel junctions has been recorded with the field applied in the plane of the junction. Here we discuss the static junction properties in a transverse magnetic field where...

  4. Inhomogeneity in barrier height at graphene/Si (GaAs) Schottky junctions

    International Nuclear Information System (INIS)

    Tomer, D; Rajput, S; Hudy, L J; Li, L; Li, C H

    2015-01-01

    Graphene (Gr) interfaced with a semiconductor forms a Schottky junction with rectifying properties, however, fluctuations in the Schottky barrier height are often observed. In this work, Schottky junctions are fabricated by transferring chemical vapor deposited monolayer Gr onto n-type Si and GaAs substrates. Temperature dependence of the barrier height and ideality factor are obtained by current–voltage measurements between 215 and 350 K. An increase in the zero bias barrier height and decrease in the ideality factor are observed with increasing temperature for both junctions. Such behavior is attributed to barrier inhomogeneities that arise from interfacial disorders as revealed by scanning tunneling microscopy/spectroscopy. Assuming a Gaussian distribution of the barrier heights, mean values of 1.14 ± 0.14 eV and 0.76 ± 0.10 eV are found for Gr/Si and Gr/GaAs junctions, respectively. These findings resolve the origin of barrier height inhomogeneities in these Schottky junctions. (paper)

  5. On simulation of local fluxes in molecular junctions

    Science.gov (United States)

    Cabra, Gabriel; Jensen, Anders; Galperin, Michael

    2018-05-01

    We present a pedagogical review of the current density simulation in molecular junction models indicating its advantages and deficiencies in analysis of local junction transport characteristics. In particular, we argue that current density is a universal tool which provides more information than traditionally simulated bond currents, especially when discussing inelastic processes. However, current density simulations are sensitive to the choice of basis and electronic structure method. We note that while discussing the local current conservation in junctions, one has to account for the source term caused by the open character of the system and intra-molecular interactions. Our considerations are illustrated with numerical simulations of a benzenedithiol molecular junction.

  6. Junction and circuit fabrication

    International Nuclear Information System (INIS)

    Jackel, L.D.

    1980-01-01

    Great strides have been made in Josephson junction fabrication in the four years since the first IC SQUID meeting. Advances in lithography have allowed the production of devices with planar dimensions as small as a few hundred angstroms. Improved technology has provided ultra-high sensitivity SQUIDS, high-efficiency low-noise mixers, and complex integrated circuits. This review highlights some of the new fabrication procedures. The review consists of three parts. Part 1 is a short summary of the requirements on junctions for various applications. Part 2 reviews intergrated circuit fabrication, including tunnel junction logic circuits made at IBM and Bell Labs, and microbridge radiation sources made at SUNY at Stony Brook. Part 3 describes new junction fabrication techniques, the major emphasis of this review. This part includes a discussion of small oxide-barrier tunnel junctions, semiconductor barrier junctions, and microbridge junctions. Part 3 concludes by considering very fine lithography and limitations to miniaturization. (orig.)

  7. Evaluering af Grøn Livsstil

    DEFF Research Database (Denmark)

    Hoffmann, Birgitte; Agger, Annika Heilskov

    1998-01-01

    :  the potential of change of the initiatives;  the development of the campaign, and  the strategies and organisation of the Danish campaign. The evaluation comprised of large number of qualitative interview and collects important knowledge of organising local processes of change......Evaluations of the Danish part of the International Campaign Green Action Plan (Grøn Livsstil). 'Grøn Livsstil' aims at qualifying and supporting individuals and families to take action in order to change their households towards sustainability. The evaluation focused on qualitative aspects such as...

  8. Psyken er en grænseflade

    DEFF Research Database (Denmark)

    Hoffmeyer, Jesper

    2011-01-01

    En computer er i sig selv blot et stykke mekanik. Det afgørende sker i mødet mellem maskinen, mennesker og fællesskaber: på grænsefladen. Præcis som hos levende væsner......En computer er i sig selv blot et stykke mekanik. Det afgørende sker i mødet mellem maskinen, mennesker og fællesskaber: på grænsefladen. Præcis som hos levende væsner...

  9. The generic Gröbner walk

    DEFF Research Database (Denmark)

    Jensen, Anders Nedergaard; Lauritzen, Niels; Fukuda, Komei

    2005-01-01

    perturbation of this line. This usually involves both time and space demanding arithmetic of integers much larger than the input numbers. In this paper we show how the explicit line may be replaced by a formal line using Robbiano's characterization of group orders on . This gives rise to the generic Gröbner...... walk involving only Gröbner basis conversion over facets and computations with marked polynomials. The infinite precision integer arithmetic is replaced by term order comparisons between (small) integral vectors. This makes it possible to compute with infinitesimal numbers and perturbations...

  10. Neutron induced permanent damage in Josephson junctions

    International Nuclear Information System (INIS)

    Mueller, G.P.; Rosen, M.

    1982-01-01

    14 MeV neutron induced permanent changes in the critical current density of Josephson junctions due to displacement damage in the junction barrier are estimated using a worst case model and the binary collision simulation code MARLOWE. No likelihood of single event hard upsets is found in this model. It is estimated that a fluence of 10 18 -10 19 neutrons/cm 2 are required to change the critical current density by 5%

  11. Overlap junctions for high coherence superconducting qubits

    Science.gov (United States)

    Wu, X.; Long, J. L.; Ku, H. S.; Lake, R. E.; Bal, M.; Pappas, D. P.

    2017-07-01

    Fabrication of sub-micron Josephson junctions is demonstrated using standard processing techniques for high-coherence, superconducting qubits. These junctions are made in two separate lithography steps with normal-angle evaporation. Most significantly, this work demonstrates that it is possible to achieve high coherence with junctions formed on aluminum surfaces cleaned in situ by Ar plasma before junction oxidation. This method eliminates the angle-dependent shadow masks typically used for small junctions. Therefore, this is conducive to the implementation of typical methods for improving margins and yield using conventional CMOS processing. The current method uses electron-beam lithography and an additive process to define the top and bottom electrodes. Extension of this work to optical lithography and subtractive processes is discussed.

  12. Shunted-Josephson-junction model. I. The autonomous case

    DEFF Research Database (Denmark)

    Belykh, V. N.; Pedersen, Niels Falsig; Sørensen, O. H.

    1977-01-01

    The shunted-Josephson-junction model: the parallel combination of a capacitance, a phase-dependent conductance, and an ideal junction element biased by a constant current, is discussed for arbitrary values of the junction parameters. The main objective is to provide a qualitative understanding...... current-voltage curves are presented. The case with a time-dependent monochromatic bias current is treated in a similar fashion in the companion paper....

  13. Model of the static universe within GR

    International Nuclear Information System (INIS)

    Karbanovski, V. V.; Tarasova, A. S.; Salimova, A. S.; Bilinskaya, G. V.; Sumbulov, A. N.

    2011-01-01

    Within GR, the problems of the Robertson-Walker universe are discussed. The approach based on transition to a nondiagonal line element is suggested. Within the considered approach, the static universe model is investigated. The possibility of constructing scenarios without an initial singularity and “exotic” matter is discussed. Accordance of the given model to the properties of the observable universe is discussed.

  14. Ballistic Graphene Josephson Junctions from the Short to the Long Junction Regimes.

    Science.gov (United States)

    Borzenets, I V; Amet, F; Ke, C T; Draelos, A W; Wei, M T; Seredinski, A; Watanabe, K; Taniguchi, T; Bomze, Y; Yamamoto, M; Tarucha, S; Finkelstein, G

    2016-12-02

    We investigate the critical current I_{C} of ballistic Josephson junctions made of encapsulated graphene-boron-nitride heterostructures. We observe a crossover from the short to the long junction regimes as the length of the device increases. In long ballistic junctions, I_{C} is found to scale as ∝exp(-k_{B}T/δE). The extracted energies δE are independent of the carrier density and proportional to the level spacing of the ballistic cavity. As T→0 the critical current of a long (or short) junction saturates at a level determined by the product of δE (or Δ) and the number of the junction's transversal modes.

  15. Increasing gap junctional coupling: a tool for dissecting the role of gap junctions

    DEFF Research Database (Denmark)

    Axelsen, Lene Nygaard; Haugan, Ketil; Stahlhut, Martin

    2007-01-01

    Much of our current knowledge about the physiological and pathophysiological role of gap junctions is based on experiments where coupling has been reduced by either chemical agents or genetic modification. This has brought evidence that gap junctions are important in many physiological processes....... In a number of cases, gap junctions have been implicated in the initiation and progress of disease, and experimental uncoupling has been used to investigate the exact role of coupling. The inverse approach, i.e., to increase coupling, has become possible in recent years and represents a new way of testing...... the role of gap junctions. The aim of this review is to summarize the current knowledge obtained with agents that selectively increase gap junctional intercellular coupling. Two approaches will be reviewed: increasing coupling by the use of antiarrhythmic peptide and its synthetic analogs...

  16. The anatomical locus of T-junction processing.

    Science.gov (United States)

    Schirillo, James A

    2009-07-01

    Inhomogeneous surrounds can produce either asymmetrical or symmetrical increment/decrement induction by orienting T-junctions to selectively group a test patch with surrounding regions [Melfi, T., & Schirillo, J. (2000). T-junctions in inhomogeneous surrounds. Vision Research, 40, 3735-3741]. The current experiments aimed to determine where T-junctions are processed by presenting each eye with a different image so that T-junctions exist only in the fused percept. Only minor differences were found between retinal and cortical versus cortical-only conditions, indicating that T-junctions are processed cortically.

  17. Parametric frequency conversion in long Josephson junctions

    International Nuclear Information System (INIS)

    Irie, F.; Ashihara, S.; Yoshida, K.

    1976-01-01

    Current steps at voltages corresponding to the parametric coupling between an applied r.f. field and junction resonant modes have been observed in long Josephson tunnel junctions in the flux-flow state. The observed periodic variations of the step height due to the applied magnetic field are explained quantitatively by a perturbational analysis using Josephson phase equations. The present study demonstrates that the moving vortex array can serve as a coherent pump wave for signal waves propagating in the barrier region, which indicates, as a result, the possibility of traveling-wave parametric devices with long Josephson tunnel junctions. (author)

  18. Molecular series-tunneling junctions.

    Science.gov (United States)

    Liao, Kung-Ching; Hsu, Liang-Yan; Bowers, Carleen M; Rabitz, Herschel; Whitesides, George M

    2015-05-13

    Charge transport through junctions consisting of insulating molecular units is a quantum phenomenon that cannot be described adequately by classical circuit laws. This paper explores tunneling current densities in self-assembled monolayer (SAM)-based junctions with the structure Ag(TS)/O2C-R1-R2-H//Ga2O3/EGaIn, where Ag(TS) is template-stripped silver and EGaIn is the eutectic alloy of gallium and indium; R1 and R2 refer to two classes of insulating molecular units-(CH2)n and (C6H4)m-that are connected in series and have different tunneling decay constants in the Simmons equation. These junctions can be analyzed as a form of series-tunneling junctions based on the observation that permuting the order of R1 and R2 in the junction does not alter the overall rate of charge transport. By using the Ag/O2C interface, this system decouples the highest occupied molecular orbital (HOMO, which is localized on the carboxylate group) from strong interactions with the R1 and R2 units. The differences in rates of tunneling are thus determined by the electronic structure of the groups R1 and R2; these differences are not influenced by the order of R1 and R2 in the SAM. In an electrical potential model that rationalizes this observation, R1 and R2 contribute independently to the height of the barrier. This model explicitly assumes that contributions to rates of tunneling from the Ag(TS)/O2C and H//Ga2O3 interfaces are constant across the series examined. The current density of these series-tunneling junctions can be described by J(V) = J0(V) exp(-β1d1 - β2d2), where J(V) is the current density (A/cm(2)) at applied voltage V and βi and di are the parameters describing the attenuation of the tunneling current through a rectangular tunneling barrier, with width d and a height related to the attenuation factor β.

  19. Josephson junctions and circle maps

    Energy Technology Data Exchange (ETDEWEB)

    Bak, P; Bohr, T; Jensen, M H; Christiansen, P V

    1984-01-01

    The return map of a differential equation for the current driven Josephson junction, or the damped driven pendulum, is shown numerically to be a circle map. Phase locking, noise and hysteresis, can thus be understood in a simple and coherent way. The transition to chaos is related to the development of a cubic inflection point. Recent theoretical results on universal behavior at the transition to chaos can readily be checked experimentally by studying I-V characteristics. 17 references, 1 figure.

  20. Den grønlandske forbindelse

    DEFF Research Database (Denmark)

    Jacobsen, Marc

    2016-01-01

    Danmarks tilstedeværelse i Arktis er helt og aldeles afhængig af, at rigsfællesskabet består. Uden Grønland ville Danmark miste muligheden for at sidde til højbords med USA, Rusland og Canada. En mulighed som, Danmarks størrelse taget i betragtning, er helt unik og af uvurderlig betydning for Dan...... for Danmarks plads i det globale hierarki. Det er derfor alfa og omega, at Danmark fortsat plejer forholdet til Grønland med stor omhu, og at eventuelle uenigheder mellem Nuuk og København bliver taget seriøst og behandlet med stor, gensidig respekt...

  1. Economic Analysis of the Greenland Inland Traverse (GrIT)

    Science.gov (United States)

    2016-06-01

    fuel and cargo based on data from the 2012 and 2014 seasons. DISCLAIMER: The contents of this report are not to be used for advertising ...GrIT compared with airlift ....................................................................... 24 13 Fuel consumed by GrIT12 and GrIT14 compared...objective was to identify and quantify, insofar as possible, the component costs of the GrIT and airlift resupply modes. In effect , we sought to link

  2. Supramolecular tunneling junctions

    NARCIS (Netherlands)

    Wimbush, K.S.

    2012-01-01

    In this study a variety of supramolecular tunneling junctions were created. The basis of these junctions was a self-assembled monolayer of heptathioether functionalized ß-cyclodextrin (ßCD) formed on an ultra-flat Au surface, i.e., the bottom electrode. This gave a well-defined hexagonally packed

  3. Macroscopic quantum tunneling in Josephson tunnel junctions and Coulomb blockade in single small tunnel junctions

    International Nuclear Information System (INIS)

    Cleland, A.N.

    1991-01-01

    Experiments investigated the process of macroscopic quantum tunneling in a moderately-damped, resistively shunted, Josephson junction are described, followed by a discussion of experiments performed on very-small-capacitance normal-metal tunnel junctions. The experiments on the resistively-shunted Josephson junction were designed to investigate a quantum process, that of the tunneling of the Josephson-phase variable under a potential barrier, in a system in which dissipation plays a major role in the dynamics of motion. All the parameters of the junction were measured using the classical phenomena of thermal activation and resonant activation. Theoretical predictions are compared with the experimental results, showing good agreement with no adjustable parameters. The experiments on small-capacitance tunnel junctions extend the measurements on the large-area Josephson junctions from the region in which the phase variable has a fairly well-defined value, i.e. its wave function has a narrow width, to the region where its value is almost completely unknown. The charge on the junction becomes well-defined and is predicted to quantize the current through the junction, giving rise to the Coulomb blockade at low bias

  4. Phase-dependent noise in Josephson junctions

    Science.gov (United States)

    Sheldon, Forrest; Peotta, Sebastiano; Di Ventra, Massimiliano

    2018-03-01

    In addition to the usual superconducting current, Josephson junctions (JJs) support a phase-dependent conductance related to the retardation effect of tunneling quasi-particles. This introduces a dissipative current with a memory-resistive (memristive) character that should also affect the current noise. By means of the microscopic theory of tunnel junctions we compute the complete current autocorrelation function of a Josephson tunnel junction and show that this memristive component gives rise to both a previously noted phase-dependent thermal noise, and an undescribed non-stationary, phase-dependent dynamic noise. As experiments are approaching ranges in which these effects may be observed, we examine the form and magnitude of these processes. Their phase dependence can be realized experimentally as a hysteresis effect and may be used to probe defects present in JJ based qubits and in other superconducting electronics applications.

  5. Mesurar la creativitat en disseny gràfic

    OpenAIRE

    Ayala Pérez, José

    2013-01-01

    En aquesta investigació es construeix un marc conceptual, on s'integra la creativitat i el disseny gràfic. S'introdueix el model tridimensional de la creativitat en el disseny gràfic, on la creativitat és disertada en tres dimensions, novetat, comunicació i estètica. Basat en el model tridimensional de la creativitat en Disseny Gràfic, es construeix un instrument per poder mesurar la creativitat d'un disseny gràfic. L'instrument va ser administrat a 115 dissenyadors gràfics del Col · legi de ...

  6. Numerical simulation of electron-beam-induced current near a silicon grain boundary and impact of a p-n junction space charge region

    Energy Technology Data Exchange (ETDEWEB)

    Corkish, R.; Altermatt, P.P.; Heiser, G. [Photovoltaics Special Research Centre, University of New South Wales, 2052 Sydney (Australia)

    2001-01-01

    Three-dimensional numerical simulations of electron-beam-induced current (EBIC) near a vertical silicon grain boundary are demonstrated. They are compared with an analytical model which excludes the effect of carrier generation other than in the bulk base region of a solar cell structure. We demonstrate that in a wide range of solar cell structures recombination in the space charge region (SCR) significantly affects the EBIC results and hence needs to be included in the data evaluation. Apart from these findings, simulations of a realistic silicon solar cell structure (thick emitter, field-dependent mobility, etc.) are demonstrated.

  7. Corrosion at the head-neck interface of current designs of modular femoral components: essential questions and answers relating to corrosion in modular head-neck junctions.

    Science.gov (United States)

    Osman, K; Panagiotidou, A P; Khan, M; Blunn, G; Haddad, F S

    2016-05-01

    There is increasing global awareness of adverse reactions to metal debris and elevated serum metal ion concentrations following the use of second generation metal-on-metal total hip arthroplasties. The high incidence of these complications can be largely attributed to corrosion at the head-neck interface. Severe corrosion of the taper is identified most commonly in association with larger diameter femoral heads. However, there is emerging evidence of varying levels of corrosion observed in retrieved components with smaller diameter femoral heads. This same mechanism of galvanic and mechanically-assisted crevice corrosion has been observed in metal-on-polyethylene and ceramic components, suggesting an inherent biomechanical problem with current designs of the head-neck interface. We provide a review of the fundamental questions and answers clinicians and researchers must understand regarding corrosion of the taper, and its relevance to current orthopaedic practice. Cite this article: Bone Joint J 2016;98-B:579-84. ©2016 The British Editorial Society of Bone & Joint Surgery.

  8. Josephson junctions of multiple superconducting wires

    Science.gov (United States)

    Deb, Oindrila; Sengupta, K.; Sen, Diptiman

    2018-05-01

    We study the spectrum of Andreev bound states and Josephson currents across a junction of N superconducting wires which may have s - or p -wave pairing symmetries and develop a scattering matrix based formalism which allows us to address transport across such junctions. For N ≥3 , it is well known that Berry curvature terms contribute to the Josephson currents; we chart out situations where such terms can have relatively large effects. For a system of three s -wave or three p -wave superconductors, we provide analytic expressions for the Andreev bound-state energies and study the Josephson currents in response to a constant voltage applied across one of the wires; we find that the integrated transconductance at zero temperature is quantized to integer multiples of 4 e2/h , where e is the electron charge and h =2 π ℏ is Planck's constant. For a sinusoidal current with frequency ω applied across one of the wires in the junction, we find that Shapiro plateaus appear in the time-averaged voltage across that wire for any rational fractional multiple (in contrast to only integer multiples in junctions of two wires) of 2 e /(ℏ ω ) . We also use our formalism to study junctions of two p -wave and one s -wave wires. We find that the corresponding Andreev bound-state energies depend on the spin of the Bogoliubov quasiparticles; this produces a net magnetic moment in such junctions. The time variation of these magnetic moments may be controlled by an external voltage applied across the junction. We discuss experiments which may test our theory.

  9. A topological extension of GR: Black holes induce dark energy

    International Nuclear Information System (INIS)

    Spaans, M

    2013-01-01

    A topological extension of general relativity is presented. The superposition principle of quantum mechanics, as formulated by the Feynman path integral, is taken as a starting point. It is argued that the trajectories that enter this path integral are distinct and thus that space-time topology is multiply connected. Specifically, space-time at the Planck scale consists of a lattice of three-tori that facilitates many distinct paths for particles to travel along. To add gravity, mini black holes are attached to this lattice. These mini black holes represent Wheeler's quantum foam and result from the fact that GR is not conformally invariant. The number of such mini black holes in any time-slice through four-space is found to be equal to the number of macroscopic (so long-lived) black holes in the entire universe. This connection, by which macroscopic black holes induce mini black holes, is a topological expression of Mach's principle. The proposed topological extension of GR can be tested because, if correct, the dark energy density of the universe should be proportional the total number of macroscopic black holes in the universe at any time. This prediction, although strange, agrees with current astrophysical observations.

  10. Gõtter, Grãber und Gelehrte

    Directory of Open Access Journals (Sweden)

    Pedro Moacyr Campos

    1953-09-01

    Full Text Available CERAM, (C. W.. — Gõtter, Grãber und Gelehrte, Rowohlt Verlag, Hamburg.,  1951, 494 págs. (Primeiro Parágrafo do Artigo Bem merecido foi o sucesso encontrado pelo livro de Ceram, Gotter, Graber und Gelehrte, ("Deuses, túmulos e eruditos", que alcançou a cifra de 106.000 exemplares entre novembro de 1949 e março de 1951, continuando a ser reimpresso após esta data.

  11. Squeezed States in Josephson Junctions.

    Science.gov (United States)

    Hu, X.; Nori, F.

    1996-03-01

    We have studied quantum fluctuation properties of Josephson junctions in the limit of large Josephson coupling energy and small charging energy, when the eigenstates of the system can be treated as being nearly localized. We have considered(X. Hu and F. Nori, preprints.) a Josephson junction in a variety of situations, e.g., coupled to one or several of the following elements: a capacitor, an inductor (in a superconducting ring), and an applied current source. By solving an effective Shrödinger equation, we have obtained squeezed vacuum (coherent) states as the ground states of a ``free-oscillating'' (linearly-driven) Josephson junction, and calculated the uncertainties of its canonical momentum, charge, and coordinate, phase. We have also shown that the excited states of the various systems we consider are similar to the number states of a simple harmonic oscillator but with different fluctuation properties. Furthermore, we have obtained the time-evolution operators for these systems. These operators can make it easier to calculate the time-dependence of the expectation values and fluctuations of various quantities starting from an arbitrary initial state.

  12. Superconducting tunnel-junction refrigerator

    International Nuclear Information System (INIS)

    Melton, R.G.; Paterson, J.L.; Kaplan, S.B.

    1980-01-01

    The dc current through an S 1 -S 2 tunnel junction, with Δ 2 greater than Δ 1 , when biased with eV 1 +Δ 2 , will lower the energy in S 1 . This energy reduction will be shared by the phonons and electrons. This device is shown to be analogous to a thermoelectric refrigerator with an effective Peltier coefficient π* approx. Δ 1 /e. Tunneling calculations yield the cooling power P/sub c/, the electrical power P/sub e/ supplied by the bias supply, and the cooling efficiency eta=P/sub c//P/sub e/. The maximum cooling power is obtained for eV= +- (Δ 2 -Δ 1 ) and t 1 =T 1 /T/sub c/1 approx. 0.9. Estimates are made of the temperature difference T 2 -T 1 achievable in Al-Pb and Sn-Pb junctions with an Al 2 O 3 tunneling barrier. The performance of this device is shown to yield a maximum cooling efficiency eta approx. = Δ 1 /(Δ 2 -Δ 1 ) which can be compared with that available in an ideal Carnot refrigerator of eta=T 1 /(T 2 -T 1 ). The development of a useful tunnel-junction refrigerator requires a tunneling barrier with an effective thermal conductance per unit area several orders of magnitude less than that provided by the A1 2 O 3 barrier in the Al-Pb and Sn-Pb systems

  13. Primary Tunnel Junction Thermometry

    International Nuclear Information System (INIS)

    Pekola, Jukka P.; Holmqvist, Tommy; Meschke, Matthias

    2008-01-01

    We describe the concept and experimental demonstration of primary thermometry based on a four-probe measurement of a single tunnel junction embedded within four arrays of junctions. We show that in this configuration random sample specific and environment-related errors can be avoided. This method relates temperature directly to Boltzmann constant, which will form the basis of the definition of temperature and realization of official temperature scales in the future

  14. Quantum Junction Solar Cells

    KAUST Repository

    Tang, Jiang

    2012-09-12

    Colloidal quantum dot solids combine convenient solution-processing with quantum size effect tuning, offering avenues to high-efficiency multijunction cells based on a single materials synthesis and processing platform. The highest-performing colloidal quantum dot rectifying devices reported to date have relied on a junction between a quantum-tuned absorber and a bulk material (e.g., TiO 2); however, quantum tuning of the absorber then requires complete redesign of the bulk acceptor, compromising the benefits of facile quantum tuning. Here we report rectifying junctions constructed entirely using inherently band-aligned quantum-tuned materials. Realizing these quantum junction diodes relied upon the creation of an n-type quantum dot solid having a clean bandgap. We combine stable, chemically compatible, high-performance n-type and p-type materials to create the first quantum junction solar cells. We present a family of photovoltaic devices having widely tuned bandgaps of 0.6-1.6 eV that excel where conventional quantum-to-bulk devices fail to perform. Devices having optimal single-junction bandgaps exhibit certified AM1.5 solar power conversion efficiencies of 5.4%. Control over doping in quantum solids, and the successful integration of these materials to form stable quantum junctions, offers a powerful new degree of freedom to colloidal quantum dot optoelectronics. © 2012 American Chemical Society.

  15. Investigation of Public Charging Infrastructure : Case study Gränby sportfält

    OpenAIRE

    Dahl, Emma; Hedström, Andreas; Lindgren, Anna

    2017-01-01

    The municipal company Sportfastigheter AB is currently renovating and developing Gränby sportfält, a sports field in Uppsala. Adjacent to the sports field, a parking lot for 700 vehicles is located, where Sportfastigheter AB is preparing to install charging points for electric vehicles (EVs) at some of the places. This bachelor thesis aims to investigate how a public charging solution should be modeled, with the parking lot at Gränby sportfält as a case study. The investigation involves estim...

  16. Ballistic Josephson junctions based on CVD graphene

    Science.gov (United States)

    Li, Tianyi; Gallop, John; Hao, Ling; Romans, Edward

    2018-04-01

    Josephson junctions with graphene as the weak link between superconductors have been intensely studied in recent years, with respect to both fundamental physics and potential applications. However, most of the previous work was based on mechanically exfoliated graphene, which is not compatible with wafer-scale production. To overcome this limitation, we have used graphene grown by chemical vapour deposition (CVD) as the weak link of Josephson junctions. We demonstrate that very short, wide CVD-graphene-based Josephson junctions with Nb electrodes can work without any undesirable hysteresis in their electrical characteristics from 1.5 K down to a base temperature of 320 mK, and their gate-tuneable critical current shows an ideal Fraunhofer-like interference pattern in a perpendicular magnetic field. Furthermore, for our shortest junctions (50 nm in length), we find that the normal state resistance oscillates with the gate voltage, consistent with the junctions being in the ballistic regime, a feature not previously observed in CVD-graphene-based Josephson junctions.

  17. Junction depth measurement using carrier illumination

    International Nuclear Information System (INIS)

    Borden, Peter

    2001-01-01

    Carrier Illumination [trade mark] (CI) is a new method recently developed to meet the need for a non-destructive, high throughput junction depth measurement on patterned wafers. A laser beam creates a quasi-static excess carrier profile in the semiconductor underlying the activated junction. The excess carrier profile is fairly constant below the junction, and drops rapidly in the junction, creating a steep index of refraction gradient at the junction edge. Interference with light reflected from this index gradient provides a signal that is analyzed to determine the junction depth. The paper summarizes evaluation of performance in full NMOS and PMOS process flows, on both bare and patterned wafers. The aims have been to validate (1) performance in the presence of underlying layers typically found at the source/drain (S/D) process steps and (2) measurement on patterned wafers. Correlation of CI measurements to SIMS and transistor drive current are shown. The data were obtained from NMOS structures using As S/D and LDD implants. Correlations to SRP, SIMS and sheet resistance are shown for PMOS structures using B 11 LDD implants. Gage capability measurements are also presented

  18. NbN Josephson and Tunnel Junctions for Space THz Observation and Signal Processing

    National Research Council Canada - National Science Library

    Setzu, Romano; Hadacek, Nicolas; Larrey, Vincent; Beaudin, Gerard; Villegier, Jean-Claude

    2005-01-01

    ... (superconductor-normal metal-superconductor) self-shunted junctions are preferred. We present the advantages of the nitride junction technology currently developed at CEA-Grenoble, based on high-performance MTS...

  19. Superconductive junctions for x-ray spectroscopy

    International Nuclear Information System (INIS)

    Grand, J.B. le; Bruijn, M.P.; Frericks, M.; Korte, P.A.J. de; Houwman, E.P.; Flokstra, J.

    1992-01-01

    Biasing of SIS-junctions for the purpose of high energy resolution x-ray detection is complicated by the presence of a DC Josephson current and AC Josephson current resonances, so that a large magnetic field is normally used for the suppression of these Josephson features. A transimpedance amplifier is proposed for biasing and signal amplification at low magnetic field. X-ray spectroscopy detectors for astronomy require a high detection efficiency in the 0.5-10 keV energy band and a reasonable (∼1 cm 2 ) detector area. Calculations on absorber-junctions combinations which might meet these requirements are presented. (author) 9 refs.; 10 figs

  20. Electroplated Ni on the PN Junction Semiconductor

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Jin Joo; Uhm, Young Rang; Son, Kwang Jae; Kim, Jong Bum; Choi, Sang Moo; Park, Jong Han; Hong, Jintae [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of)

    2015-05-15

    Nickel (Ni) electroplating was implemented by using a metal Ni powder in order to establish a Ni-63 plating condition on the PN junction semiconductor needed for production of betavoltaic battery. PN junction semiconductors with a Ni seed layer of 500 and 1000 A were coated with Ni at current density from 10 to 50 mA cm{sup 2}. The surface roughness and average grain size of Ni deposits were investigated by XRD and SEM techniques. The roughness of Ni deposit was increased as the current density was increased, and decreased as the thickness of Ni seed layer was increased.

  1. Electroplated Ni on the PN Junction Semiconductor

    International Nuclear Information System (INIS)

    Kim, Jin Joo; Uhm, Young Rang; Son, Kwang Jae; Kim, Jong Bum; Choi, Sang Moo; Park, Jong Han; Hong, Jintae

    2015-01-01

    Nickel (Ni) electroplating was implemented by using a metal Ni powder in order to establish a Ni-63 plating condition on the PN junction semiconductor needed for production of betavoltaic battery. PN junction semiconductors with a Ni seed layer of 500 and 1000 A were coated with Ni at current density from 10 to 50 mA cm 2 . The surface roughness and average grain size of Ni deposits were investigated by XRD and SEM techniques. The roughness of Ni deposit was increased as the current density was increased, and decreased as the thickness of Ni seed layer was increased

  2. Josephson tunnel junction microwave attenuator

    DEFF Research Database (Denmark)

    Koshelets, V. P.; Shitov, S. V.; Shchukin, A. V.

    1993-01-01

    A new element for superconducting electronic circuitry-a variable attenuator-has been proposed, designed, and successfully tested. The principle of operation is based on the change in the microwave impedance of a superconductor-insulator-superconductor (SIS) Josephson tunnel junction when dc biased...... at different points in the current-voltage characteristic. Both numerical calculations based on the Tien-Gordon theory and 70-GHz microwave experiments have confirmed the wide dynamic range (more than 15-dB attenuation for one stage) and the low insertion loss in the ''open'' state. The performance of a fully...

  3. Spectrum of resonant plasma oscillations in long Josephson junctions

    International Nuclear Information System (INIS)

    Holst, T.

    1996-01-01

    An analysis is presented for the amplitude of the plasma oscillations in the zero-voltage state of a long and narrow Josephson tunnel junction. The calculation is valid for arbitrary normalized junction length and arbitrary bias current. The spectrum of the plasma resonance is found numerically as solutions to an analytical equation. The low-frequency part of the spectrum contains a single resonance, which is known to exist also in the limit of a short and narrow junction. Above a certain cutoff frequency, a series of high-frequency standing wave plasma resonances is excited, a special feature of long Josephson junctions. copyright 1996 The American Physical Society

  4. Electromagnetic waves in single- and multi-Josephson junctions

    International Nuclear Information System (INIS)

    Matsumoto, Hideki; Koyama, Tomio; Machida, Masahiko

    2008-01-01

    The terahertz wave emission from the intrinsic Josephson junctions is one of recent topics in high T c superconductors. We investigate, by numerical simulation, properties of the electromagnetic waves excited by a constant bias current in the single- and multi-Josephson junctions. Nonlinear equations of phase-differences are solved numerically by treating the effects of the outside electromagnetic fields as dynamical boundary conditions. It is shown that the emitted power of the electromagnetic wave can become large near certain retrapping points of the I-V characteristics. An instability of the inside phase oscillation is related to large amplitude of the oscillatory waves. In the single- (or homogeneous mutli-) Josephson junctions, electromagnetic oscillations can occur either in a form of standing waves (shorter junctions) or by formation of vortex-antivortex pairs (longer junctions). How these two effects affects the behavior of electromagnetic waves in the intrinsic Josephson junctions is discussed

  5. GrOW briefs: From research to policy | IDRC - International ...

    International Development Research Centre (IDRC) Digital Library (Canada)

    2017-10-17

    Oct 17, 2017 ... ​For access to more GrOW findings and literature, visit the GrOW Research Series. Learn more about the GrOW program. What we do · Funding · Resources · About IDRC. Knowledge. Innovation. Solutions. Careers · Contact Us · Site map. Sign up now for IDRC news and views sent directly to your inbox ...

  6. Scattering theory of superconductive tunneling in quantum junctions

    International Nuclear Information System (INIS)

    Shumeiko, V.S.; Bratus', E.N.

    1997-01-01

    A consistent theory of superconductive tunneling in single-mode junctions within a scattering formulation of Bogolyubov-de Gennes quantum mechanics is presented. The dc Josephson effect and dc quasiparticle transport in the voltage-biased junctions are considered. Elastic quasiparticle scattering by the junction determines the equilibrium Josephson current. The origin of Andreev bound states in tunnel junctions and their role in equilibrium Josephson transport are discussed. In contrast, quasiparticle tunneling in voltage-biased junctions is determined by inelastic scattering. A general expression for inelastic scattering amplitudes is derived and the quasiparticle current is calculated at all voltages with emphasis on a discussion of the properties of sub gap tunnel current and the nature of subharmonic gap structure

  7. Shapiro and parametric resonances in coupled Josephson junctions

    International Nuclear Information System (INIS)

    Gaafar, Ma A; Shukrinov, Yu M; Foda, A

    2012-01-01

    The effect of microwave irradiation on the phase dynamics of intrinsic Josephson junctions in high temperature superconductors is investigated. We compare the current-voltage characteristics for a stack of coupled Josephson junctions under external irradiation calculated in the framework of CCJJ and CCJJ+DC models.

  8. Fast temporal fluctuations in single-molecule junctions.

    Science.gov (United States)

    Ochs, Roif; Secker, Daniel; Elbing, Mark; Mayor, Marcel; Weber, Heiko B

    2006-01-01

    The noise within the electrical current through single-molecule junctions is studied cryogenic temperature. The organic sample molecules were contacted with the mechanically controlled break-junction technique. The noise spectra refer to a where only few Lorentzian fluctuators occur in the conductance. The frequency dependence shows qualitative variations from sample to sample.

  9. Four-junction superconducting circuit

    Science.gov (United States)

    Qiu, Yueyin; Xiong, Wei; He, Xiao-Ling; Li, Tie-Fu; You, J. Q.

    2016-01-01

    We develop a theory for the quantum circuit consisting of a superconducting loop interrupted by four Josephson junctions and pierced by a magnetic flux (either static or time-dependent). In addition to the similarity with the typical three-junction flux qubit in the double-well regime, we demonstrate the difference of the four-junction circuit from its three-junction analogue, including its advantages over the latter. Moreover, the four-junction circuit in the single-well regime is also investigated. Our theory provides a tool to explore the physical properties of this four-junction superconducting circuit. PMID:27356619

  10. Converging shock flows for a Mie-Grüneisen equation of state

    Science.gov (United States)

    Ramsey, Scott D.; Schmidt, Emma M.; Boyd, Zachary M.; Lilieholm, Jennifer F.; Baty, Roy S.

    2018-04-01

    Previous work has shown that the one-dimensional (1D) inviscid compressible flow (Euler) equations admit a wide variety of scale-invariant solutions (including the famous Noh, Sedov, and Guderley shock solutions) when the included equation of state (EOS) closure model assumes a certain scale-invariant form. However, this scale-invariant EOS class does not include even simple models used for shock compression of crystalline solids, including many broadly applicable representations of Mie-Grüneisen EOS. Intuitively, this incompatibility naturally arises from the presence of multiple dimensional scales in the Mie-Grüneisen EOS, which are otherwise absent from scale-invariant models that feature only dimensionless parameters (such as the adiabatic index in the ideal gas EOS). The current work extends previous efforts intended to rectify this inconsistency, by using a scale-invariant EOS model to approximate a Mie-Grüneisen EOS form. To this end, the adiabatic bulk modulus for the Mie-Grüneisen EOS is constructed, and its key features are used to motivate the selection of a scale-invariant approximation form. The remaining surrogate model parameters are selected through enforcement of the Rankine-Hugoniot jump conditions for an infinitely strong shock in a Mie-Grüneisen material. Finally, the approximate EOS is used in conjunction with the 1D inviscid Euler equations to calculate a semi-analytical Guderley-like imploding shock solution in a metal sphere and to determine if and when the solution may be valid for the underlying Mie-Grüneisen EOS.

  11. Tunable Nitride Josephson Junctions.

    Energy Technology Data Exchange (ETDEWEB)

    Missert, Nancy A. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Henry, Michael David [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Lewis, Rupert M. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Howell, Stephen W. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Wolfley, Steven L. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Brunke, Lyle Brent [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Wolak, Matthaeus [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

    2017-12-01

    We have developed an ambient temperature, SiO2/Si wafer - scale process for Josephson junctions based on Nb electrodes and Ta x N barriers with tunable electronic properties. The films are fabricated by magnetron sputtering. The electronic properties of the TaxN barriers are controlled by adjusting the nitrogen flow during sputtering. This technology offers a scalable alternative to the more traditional junctions based on AlOx barriers for low - power, high - performance computing.

  12. Josephson tunnel junctions with ferromagnetic interlayer

    International Nuclear Information System (INIS)

    Weides, M.P.

    2006-01-01

    Superconductivity and ferromagnetism are well-known physical properties of solid states that have been widely studied and long thought about as antagonistic phenomena due to difference in spin ordering. It turns out that the combination of both superconductor and ferromagnet leads to a very rich and interesting physics. One particular example, the phase oscillations of the superconducting order parameter inside the ferromagnet, will play a major role for the devices discussed in this work. In this thesis, I present Josephson junctions with a thin Al 2 O 3 tunnel barrier and a ferromagnetic interlayer, i.e. superconductor-insulator-ferromagnet-superconductor (SIFS) stacks. The fabrication of junctions was optimized regarding the insulation of electrodes and the homogeneity of the current transport. The junctions were either in the 0 or π coupled ground state, depending on the thickness of the ferromagnetic layer and on temperature. The influence of ferromagnetic layer thickness on the transport properties and the coupling (0, π) of SIFS tunnel junctions was studied. Furthermore, using a stepped ferromagnetic layer with well-chosen thicknesses, I obtained the so-called 0-π Josephson junction. At a certain temperature this 0-π junction can be made perfectly symmetric. In this case the ground state corresponds to a vortex of supercurrent creating a magnetic flux which is a fraction of the magnetic flux quantum Φ 0 . Such structures allow to study the physics of fractional vortices and to build various electronic circuits based on them. The SIFS junctions presented here have an exponentially vanishing damping at T → 0. The SIFS technology developed within the framework of this work may be used to construct classical and quantum devices such as oscillators, memory cells and qubits. (orig.)

  13. Josephson tunnel junctions with ferromagnetic interlayer

    Energy Technology Data Exchange (ETDEWEB)

    Weides, M.P.

    2006-07-01

    Superconductivity and ferromagnetism are well-known physical properties of solid states that have been widely studied and long thought about as antagonistic phenomena due to difference in spin ordering. It turns out that the combination of both superconductor and ferromagnet leads to a very rich and interesting physics. One particular example, the phase oscillations of the superconducting order parameter inside the ferromagnet, will play a major role for the devices discussed in this work. In this thesis, I present Josephson junctions with a thin Al{sub 2}O{sub 3} tunnel barrier and a ferromagnetic interlayer, i.e. superconductor-insulator-ferromagnet-superconductor (SIFS) stacks. The fabrication of junctions was optimized regarding the insulation of electrodes and the homogeneity of the current transport. The junctions were either in the 0 or {pi} coupled ground state, depending on the thickness of the ferromagnetic layer and on temperature. The influence of ferromagnetic layer thickness on the transport properties and the coupling (0, {pi}) of SIFS tunnel junctions was studied. Furthermore, using a stepped ferromagnetic layer with well-chosen thicknesses, I obtained the so-called 0-{pi} Josephson junction. At a certain temperature this 0-{pi} junction can be made perfectly symmetric. In this case the ground state corresponds to a vortex of supercurrent creating a magnetic flux which is a fraction of the magnetic flux quantum {phi}{sub 0}. Such structures allow to study the physics of fractional vortices and to build various electronic circuits based on them. The SIFS junctions presented here have an exponentially vanishing damping at T {yields} 0. The SIFS technology developed within the framework of this work may be used to construct classical and quantum devices such as oscillators, memory cells and qubits. (orig.)

  14. Characterization of magnetic tunnel junction test pads

    DEFF Research Database (Denmark)

    Østerberg, Frederik Westergaard; Kjær, Daniel; Nielsen, Peter Folmer

    2015-01-01

    We show experimentally as well as theoretically that patterned magnetic tunnel junctions can be characterized using the current-in-plane tunneling (CIPT) method, and the key parameters, the resistance-area product (RA) and the tunnel magnetoresistance (TMR), can be determined. The CIPT method...

  15. Double-barrier junction based dc SQUID

    NARCIS (Netherlands)

    Bartolomé, M.E.; Brinkman, Alexander; Flokstra, Jakob; Golubov, Alexandre Avraamovitch; Rogalla, Horst

    2000-01-01

    dc SQUIDs based on double-barrier Nb/Al/AlOx/Al/AlOx/Al/Nb junctions (DBSQs) have been fabricated and tested for the first time. The current–voltage curves have been measured at temperatures down to 1.4 K. The critical current, Ic, dependence on the temperature T is partially described by the

  16. Gap junctions-guards of excitability

    DEFF Research Database (Denmark)

    Stroemlund, Line Waring; Jensen, Christa Funch; Qvortrup, Klaus

    2015-01-01

    Cardiomyocytes are connected by mechanical and electrical junctions located at the intercalated discs (IDs). Although these structures have long been known, it is becoming increasingly clear that their components interact. This review describes the involvement of the ID in electrical disturbances...... of the heart and focuses on the role of the gap junctional protein connexin 43 (Cx43). Current evidence shows that Cx43 plays a crucial role in organizing microtubules at the intercalated disc and thereby regulating the trafficking of the cardiac sodium channel NaV1.5 to the membrane....

  17. Spatially resolved detection of mutually locked Josephson junctions in arrays

    International Nuclear Information System (INIS)

    Keck, M.; Doderer, T.; Huebener, R.P.; Traeuble, T.; Dolata, R.; Weimann, T.; Niemeyer, J.

    1997-01-01

    Mutual locking due to the internal coupling in two-dimensional arrays of Josephson junctions was investigated. The appearance of Shapiro steps in the current versus voltage curve of a coupled on-chip detector junction is used to indicate coherent oscillations in the array. A highly coherent state is observed for some range of the array bias current. By scanning the array with a low-power electron beam, mutually locked junctions remain locked while the unlocked junctions generate a beam-induced additional voltage drop at the array. This imaging technique allows the detection of the nonlocked or weakly locked Josephson junctions in a (partially) locked array state. copyright 1997 American Institute of Physics

  18. Observation of supercurrent in graphene-based Josephson junction

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Libin; Li, Sen; Kang, Ning [Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871 (China); Xu, Chuan; Ren, Wencai [Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016 (China)

    2015-07-01

    Josephson junctions with a normal metal region sandwiched between two superconductors (S) are known as superconductor- normal-superconductor (SNS) structures. It has attracted significant attention especially when changing the normal metal with graphene, which allow for high tunability with the gate voltage and to study the proximity effect of the massless Dirac fermions. Here we report our work on graphene-based Josephson junction with a new two dimensional superconductor crystal, which grown directly on graphene, as superconducting electrodes. At low temperature, we observer proximity effect induced supercurrent flowing through the junction. The temperature and the magnetic field dependences of the critical current characteristics of the junction are also studied. The critical current exhibits a Fraunhofer-type diffraction pattern against magnetic field. Our experiments provided a new route of fabrication of graphene-based Josephson junction.

  19. Two New Sharp Ostrowski-Grüss Type Inequalities

    Directory of Open Access Journals (Sweden)

    Zheng Liu

    2013-11-01

    Full Text Available The purpose of this paper is to use a variant of the Grüss inequality to derive two new sharp Ostrowski-Grüss type inequalities related to a perturbed trapezoidal type rule and a perturbed generalized interior point rule, respectively, which provide improvements of some previous results in the literatures.

  20. Growth and Economic Opportunities for Women (GrOW) Frequently ...

    International Development Research Centre (IDRC) Digital Library (Canada)

    Alejandra

    GrOW will take a broad perspective on the types of questions and evidence on ... question; (2) set the outcome in the broader context of the underlying programme theory, ... Communications from the GrOW team with applicants during the ... There are specific criteria and application processes for this call that should be.

  1. Ungdomsselvmord og moderniseringsproblemer blandt inuit i Grønland

    DEFF Research Database (Denmark)

    Thorslund, Jørgen

    Undersøgelse fra Det grønlandske Forebyggelsesråds projekt vedrørende ungdomsselvmord, der ud fra kulturelle, sociale og psykologiske problemaspekter belyser årsagerne til selvmord blandt unge grønlændere og bringer forslag til forebyggelsesinitiativer, [...] der kan mindske antallet af selvmord....

  2. Experiments on the interaction between long Josephson junctions and a coplanar strip resonator

    DEFF Research Database (Denmark)

    Davidson, A.; Pedersen, Niels Falsig

    1992-01-01

    Experiments are reported on a new geometry designed to couple long Josephson junction fluxon oscillators to a resonant cavity. The junctions were made with a niobium-aluminum oxide-niobium trilayer process with a critical-current density of around 1000 A/cm2. Various numbers of such junctions wer...

  3. Silicon fiber with p-n junction

    International Nuclear Information System (INIS)

    Homa, D.; Cito, A.; Pickrell, G.; Hill, C.; Scott, B.

    2014-01-01

    In this study, we fabricated a p-n junction in a fiber with a phosphorous doped silicon core and fused silica cladding. The fibers were fabricated via a hybrid process of the core-suction and melt-draw techniques and maintained overall diameters ranging from 200 to 900 μm and core diameters of 20–800 μm. The p-n junction was formed by doping the fiber with boron and confirmed via the current-voltage characteristic. The demonstration of a p-n junction in a melt-drawn silicon core fiber paves the way for the seamless integration of optical and electronic devices in fibers.

  4. Electrical analog of a Josephson junction

    International Nuclear Information System (INIS)

    Goldman, A.M.

    1979-01-01

    It is noted that a mathematical description of the phase-coupling of two oscillators synchronized by a phase-lock-loop under the influence of thermal white noise is analogous to that of the phase coupling of two superconductors in a Josephson junction also under the influence of noise. This analogy may be useful in studying threshold instabilities of the Josephson junction in regimes not restricted to the case of large damping. This is of interest because the behavior of the mean voltage near the threshold current can be characterized by critical exponents which resemble those exhibited by an order parameter of a continuous phase transition. As it is possible to couple a collection of oscillators together in a chain, the oscillator analogy may also be useful in exploring the dynamics and statistical mechanics of coupled junctions

  5. Quantum Junction Solar Cells

    KAUST Repository

    Tang, Jiang; Liu, Huan; Zhitomirsky, David; Hoogland, Sjoerd; Wang, Xihua; Furukawa, Melissa; Levina, Larissa; Sargent, Edward H.

    2012-01-01

    -performing colloidal quantum dot rectifying devices reported to date have relied on a junction between a quantum-tuned absorber and a bulk material (e.g., TiO 2); however, quantum tuning of the absorber then requires complete redesign of the bulk acceptor, compromising

  6. Flicker (1/f) noise in tunnel junction DC SQUIDS

    International Nuclear Information System (INIS)

    Koch, R.H.; Clarke, J.; Goubau, W.M.; Martinis, J.M.; Pegrum, C.M.; Van Harlingen, D.J.

    1983-01-01

    We have measured the spectral density of the 1/f voltage noise in current-biased resistively shunted Josephson tunnel junctions and dc SQUIDs. A theory in which fluctuations in the temperature give rise to fluctuations in the critical current and hence in the voltage predicts the magnitude of the noise quite accurately for junctions with areas of about 2 x 10 4 μm 2 , but significantly overestimates the noise for junctions with areas of about 6 μm 2 . DC SQUIDs fabricated from these two types of junctions exhibit substantially more 1/f voltage noise than would be predicted from a model in which the noise arises from critical current fluctuations in the junctions. This result was confirmed by an experiment involving two different bias current and flux modulation schemes, which demonstrated that the predominant 1/f voltage noise arises not from critical current fluctuations, but from some unknown source that can be regarded as an apparent 1/f flux noise. Measurements on five different configurations of dc SQUIDs fabricated with thin-film tunnel junctions and with widely varying areas, inductances, and junction capacitances show that the spectral density of the 1/f equivalent flux noise is roughtly constant, within a factor of three of (10 -10 /f)phi 2 0 Hz -1 . It is emphasized that 1/f flux noise may not be the predominant source of 1/f noise in SQUIDS fabricated with other technologies

  7. Visualidad del producto gráfico

    Directory of Open Access Journals (Sweden)

    Dr. José Luis Valero Sancho

    2002-01-01

    Full Text Available Los ojos son una de las vías de entrada de conocimientos más utilizadas por el ser humano, quizá una de las más importantes vías de acceso a la cultura. Pero pueden ser algo más que unos órganos al servicio del hombre, ya que tienen un funcionamiento propio que los hace vulnerables y pueden ser engañados y manipulados desde la apariencia o disposición visual de las cosas. ¿Qué es la visualidad? Según el Diccionario de la Real Academia Española, visual es lo perteneciente a la vista como instrumento o medio para ver y visualidad es el efecto agradable de los objetos vistosos que también pertenece a la vista. Por tanto, no debemos confundir visual con visualidad, pues el primero es el medio y el segundo el efecto que produce la utilización de los ojos y se desarrolla con la experiencia, porque consiste en reconocer y percibir algo que ya ha filtrado el órgano de la vista. ¿Cuándo los productos gráficos tienen visualidad? Cuando una información se explica mejor con estos productos icónicos y tipográficos, percibidos por la vista experta y educada para recibirlos.

  8. Josephson junctions with ferromagnetic alloy interlayer

    Energy Technology Data Exchange (ETDEWEB)

    Himmel, Nico

    2015-07-23

    Josephson junctions are used as active devices in superconducting electronics and quantum information technology. Outstanding properties are their distinct non-linear electrical characteristics and a usually sinusoidal relation between the current and the superconducting phase difference across the junction. In general the insertion of ferromagnetic material in the barrier of a Josephson junction is associated with a suppression of superconducting correlations. But also new phenomena can arise which may allow new circuit layouts and enhance the performance of applications. This thesis presents a systematic investigation for two concepts to fabricate Josephson junctions with a rather uncommon negative critical current. Such devices exhibit an intrinsic phase slip of π between the electrodes, so they are also known as π junctions. Both studies go well beyond existing experiments and in one system a π junction is shown for the first time. All the thin film junctions are based on superconducting Nb electrodes. In a first approach, barriers made from Si and Fe were investigated with respect to the realisation of π junctions by spin-flip processes. The distribution of Fe in the Si matrix was varied from pure layers to disperse compounds. The systematic fabrication of alloy barriers was facilitated by the development of a novel timing-based combinatorial sputtering technique for planetary deposition systems. An orthogonal gradient approach allowed to create binary layer libraries with independent variations of thickness and composition. Second, Nb vertical stroke AlO{sub x} vertical stroke Nb vertical stroke Ni{sub 60}Cu{sub 40} vertical stroke Nb (SIsFS) double barrier junctions were experimentally studied for the occurrence of proximity effect induced order parameter oscillations. Detailed dependencies of the critical current density on the thickness of s-layer and F-layer were acquired and show a remarkable agreement to existing theoretical predictions. Especially

  9. Josephson junctions with ferromagnetic alloy interlayer

    International Nuclear Information System (INIS)

    Himmel, Nico

    2015-01-01

    Josephson junctions are used as active devices in superconducting electronics and quantum information technology. Outstanding properties are their distinct non-linear electrical characteristics and a usually sinusoidal relation between the current and the superconducting phase difference across the junction. In general the insertion of ferromagnetic material in the barrier of a Josephson junction is associated with a suppression of superconducting correlations. But also new phenomena can arise which may allow new circuit layouts and enhance the performance of applications. This thesis presents a systematic investigation for two concepts to fabricate Josephson junctions with a rather uncommon negative critical current. Such devices exhibit an intrinsic phase slip of π between the electrodes, so they are also known as π junctions. Both studies go well beyond existing experiments and in one system a π junction is shown for the first time. All the thin film junctions are based on superconducting Nb electrodes. In a first approach, barriers made from Si and Fe were investigated with respect to the realisation of π junctions by spin-flip processes. The distribution of Fe in the Si matrix was varied from pure layers to disperse compounds. The systematic fabrication of alloy barriers was facilitated by the development of a novel timing-based combinatorial sputtering technique for planetary deposition systems. An orthogonal gradient approach allowed to create binary layer libraries with independent variations of thickness and composition. Second, Nb vertical stroke AlO x vertical stroke Nb vertical stroke Ni 60 Cu 40 vertical stroke Nb (SIsFS) double barrier junctions were experimentally studied for the occurrence of proximity effect induced order parameter oscillations. Detailed dependencies of the critical current density on the thickness of s-layer and F-layer were acquired and show a remarkable agreement to existing theoretical predictions. Especially a variation of

  10. Electron-beam damaged high-temperature superconductor Josephson junctions

    International Nuclear Information System (INIS)

    Pauza, A.J.; Booij, W.E.; Herrmann, K.; Moore, D.F.; Blamire, M.G.; Rudman, D.A.; Vale, L.R.

    1997-01-01

    Results are presented on the fabrication and characterization of high critical temperature Josephson junctions in thin films of YBa 2 Cu 3 O 7-δ produced by the process of focused electron-beam irradiation using 350 keV electrons. The junctions so produced have uniform spatial current densities, can be described in terms of the resistive shunted junction model, and their current densities can be tailored for a given operating temperature. The physical properties of the damaged barrier can be described as a superconducting material of either reduced or zero critical temperature (T c ), which has a length of ∼15nm. The T c reduction is caused primarily by oxygen Frenkel defects in the Cu - O planes. The large beam currents used in the fabrication of the junctions mean that the extent of the barrier is limited by the incident electron-beam diameter, rather than by scattering within the film. The properties of the barrier can be calculated using a superconductor/normal/superconductor (SNS) junction model with no boundary resistance. From the SNS model, we can predict the scaling of the critical current resistance (I c R n ) product and gain insight into the factors controlling the junction properties, T c , and reproducibility. From the measured I c R n scaling data, we can predict the I c R n product of a junction at a given operating temperature with a given current density. I c R n products of ∼2mV can be achieved at 4.2 K. The reproducibility of several junctions in a number of samples can be characterized by the ratio of the maximum-to-minimum critical currents on the same substrate of less than 1.4. Stability over several months has been demonstrated at room and refrigerator temperatures (297 and 281 K) for junctions that have been initially over damaged and then annealed at temperatures ∼380K. (Abstract Truncated)

  11. Holographic s-wave and p-wave Josephson junction with backreaction

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Yong-Qiang; Liu, Shuai [Institute of Theoretical Physics, Lanzhou University,Lanzhou 730000, People’s Republic of (China)

    2016-11-22

    In this paper, we study the holographic models of s-wave and p-wave Josephoson junction away from probe limit in (3+1)-dimensional spacetime, respectively. With the backreaction of the matter, we obtained the anisotropic black hole solution with the condensation of matter fields. We observe that the critical temperature of Josephoson junction decreases with increasing backreaction. In addition to this, the tunneling current and condenstion of Josephoson junction become smaller as backreaction grows larger, but the relationship between current and phase difference still holds for sine function. Moreover, condenstion of Josephoson junction deceases with increasing width of junction exponentially.

  12. Resonant tunnel magnetoresistance in a double magnetic tunnel junction

    KAUST Repository

    Useinov, Arthur; Useinov, Niazbeck Kh H; Tagirov, Lenar R.; Kosel, Jü rgen

    2011-01-01

    We present quasi-classical approach to calculate a spin-dependent current and tunnel magnetoresistance (TMR) in double magnetic tunnel junctions (DMTJ) FML/I/FMW/I/FMR, where the magnetization of the middle ferromagnetic metal layer FMW can

  13. Robust spin transfer torque in antiferromagnetic tunnel junctions

    KAUST Repository

    Saidaoui, Hamed Ben Mohamed; Waintal, Xavier; Manchon, Aurelien

    2017-01-01

    We theoretically study the current-induced spin torque in antiferromagnetic tunnel junctions, composed of two semi-infinite antiferromagnetic layers separated by a tunnel barrier, in both clean and disordered regimes. We find that the torque

  14. Bottom-up, Robust Graphene Ribbon Electronics in All-Carbon Molecular Junctions.

    Science.gov (United States)

    Supur, Mustafa; Van Dyck, Colin; Bergren, Adam J; McCreery, Richard L

    2018-02-21

    Large-area molecular electronic junctions consisting of 5-carbon wide graphene ribbons (GR) with lengths of 2-12 nm between carbon electrodes were fabricated by electrochemical reduction of diazotized 1,8-diaminonaphthalene. Their conductance greatly exceeds that observed for other molecular junctions of similar thicknesses, by a factor of >1 × 10 4 compared to polyphenylenes and >1 × 10 7 compared to alkane chains. The remarkable increase of conductance of the GR nanolayer results from (i) uninterrupted planarity of fused-arene structure affording extensive π-electron delocalization and (ii) enhanced electronic coupling of molecular layer with the carbon bottom contact by two-point covalent bonding, in agreement with DFT-based simulations.

  15. Gröbner bases statistics and software systems

    CERN Document Server

    2013-01-01

    The idea of the Gröbner basis first appeared in a 1927 paper by F. S. Macaulay, who succeeded in creating a combinatorial characterization of the Hilbert functions of homogeneous ideals of the polynomial ring. Later, the modern definition of the Gröbner basis was independently introduced by Heisuke Hironaka in 1964 and Bruno Buchberger in 1965. However, after the discovery of the notion of the Gröbner basis by Hironaka and Buchberger, it was not actively pursued for 20 years. A breakthrough was made in the mid-1980s by David Bayer and Michael Stillman, who created the Macaulay computer algebra system with the help of the Gröbner basis. Since then, rapid development on the Gröbner basis has been achieved by many researchers, including Bernd Sturmfels. This book serves as a standard bible of the Gröbner basis, for which the harmony of theory, application, and computation are indispensable. It provides all the fundamentals for graduate students to learn the ABC’s of the Gröbner basis, requiring no speci...

  16. Josephson junctions array resonators

    Energy Technology Data Exchange (ETDEWEB)

    Gargiulo, Oscar; Muppalla, Phani; Mirzaei, Iman; Kirchmair, Gerhard [Institute for Quantum Optics and Quantum Information, Innsbruck (Austria)

    2016-07-01

    We present an experimental analysis of the self- and cross-Kerr effect of extended plasma resonances in Josephson junction chains. The chain consists of 1600 individual junctions and we can measure quality factors in excess of 10000. The Kerr effect manifests itself as a frequency shift that depends linearly on the number of photons in a resonant mode. By changing the input power we are able to measure this frequency shift on a single mode (self-kerr). By changing the input power on another mode while measuring the same one, we are able to evaluate the cross-kerr effect. We can measure the cross-Kerr effect by probing the resonance frequency of one mode while exciting another mode of the array with a microwave drive.

  17. Curved Josephson junction

    International Nuclear Information System (INIS)

    Dobrowolski, Tomasz

    2012-01-01

    The constant curvature one and quasi-one dimensional Josephson junction is considered. On the base of Maxwell equations, the sine–Gordon equation that describes an influence of curvature on the kink motion was obtained. It is showed that the method of geometrical reduction of the sine–Gordon model from three to lower dimensional manifold leads to an identical form of the sine–Gordon equation. - Highlights: ► The research on dynamics of the phase in a curved Josephson junction is performed. ► The geometrical reduction is applied to the sine–Gordon model. ► The results of geometrical reduction and the fundamental research are compared.

  18. Shunted-Josephson-junction model. II. The nonautonomous case

    DEFF Research Database (Denmark)

    Belykh, V. N.; Pedersen, Niels Falsig; Sørensen, O. H.

    1977-01-01

    The shunted-Josephson-junction model with a monochromatic ac current drive is discussed employing the qualitative methods of the theory of nonlinear oscillations. As in the preceding paper dealing with the autonomous junction, the model includes a phase-dependent conductance and a shunt capacitance....... The mathematical discussion makes use of the phase-space representation of the solutions to the differential equation. The behavior of the trajectories in phase space is described for different characteristic regions in parameter space and the associated features of the junction IV curve to be expected are pointed...... out. The main objective is to provide a qualitative understanding of the junction behavior, to clarify which kinds of properties may be derived from the shunted-junction model, and to specify the relative arrangement of the important domains in the parameter-space decomposition....

  19. Visualizing supercurrents in 0-{pi} ferromagnetic Josephson tunnel junctions

    Energy Technology Data Exchange (ETDEWEB)

    Goldobin, Edward; Guerlich, Christian; Gaber, Tobias; Koelle, Dieter; Kleiner, Reinhold [Physikalisches Institut and Center for Collective Quantum Phenomena, Universitaet Tuebingen (Germany); Weides, Martin; Kohlstedt, Hermann [Institute of Solid State Physics, Reserch Center Juelich (Germany)

    2009-07-01

    So-called 0 and {pi} Josephson junctions can be treated as having positive and negative critical currents. This implies that the same phase shift applied to a Josephson junction causes counterflow of supercurrents in 0 and in {pi} junctions connected in parallel provided they are short in comparison with Josephson penetration depth {lambda}{sub J}. We have fabricated several 0, {pi}, 0-{pi}, 0-{pi}-0 and 20 x (0-{pi}-) planar superconductor-insulator-ferromagnet-superconductor Josephson junctions and studied the spatial supercurrent density distribution j{sub s}(x,y) across the junction area using low temperature scanning electron microscopy. At zero magnetic field we clearly see counterflow of the supercurrents in 0 and {pi} regions. The picture also changes consistently in the applied magnetic field.

  20. Soliton excitations in Josephson tunnel junctions

    DEFF Research Database (Denmark)

    Lomdahl, P. S.; Sørensen, O. H.; Christiansen, Peter Leth

    1982-01-01

    A detailed numerical study of a sine-Gordon model of the Josephson tunnel junction is compared with experimental measurements on junctions with different L / λJ ratios. The soliton picture is found to apply well on both relatively long (L / λJ=6) and intermediate (L / λJ=2) junctions. We find good...... agreement for the current-voltage characteristics, power output, and for the shape and height of the zero-field steps (ZFS). Two distinct modes of soliton oscillations are observed: (i) a bunched or congealed mode giving rise to the fundamental frequency f1 on all ZFS's and (ii) a "symmetric" mode which...... on the Nth ZFS yields the frequency Nf1 Coexistence of two adjacent frequencies is found on the third ZFS of the longer junction (L / λJ=6) in a narrow range of bias current as also found in the experiments. Small asymmetries in the experimental environment, a weak magnetic field, e.g., is introduced via...

  1. Fossiler i Grønland. 2. del

    DEFF Research Database (Denmark)

    Harper, David Alexander Taylor; Lindow, Bent Erik Kramer

    2009-01-01

    Dette er anden og sidste del af POST Greenlands serie om fossiler i Grønland med tre frimærker, der beretter om de mange og spændende fossilfund fra Grønland. Mærkerne fortsætter vores rejse gennem nogle af nøglebegivenhederne i livets historie, smukt illustreret af endnu flere unikke fossiler....... Disse tre fossiler, en plante, et bløddyr og et hvirveldyr, er fra de yngre aflejringer i Grønland med aldre spændende fra for 200 millioner og indtil kun 8.000 år siden....

  2. Effect of solar-cell junction geometry on open-circuit voltage

    Science.gov (United States)

    Weizer, V. G.; Godlewski, M. P.

    1985-01-01

    Simple analytical models have been found that adequately describe the voltage behavior of both the stripe junction and dot junction grating cells as a function of junction area. While the voltage in the former case is found to be insensitive to junction area reduction, significant voltage increases are shown to be possible for the dot junction cell. With regard to cells in which the junction area has been increased in a quest for better performance, it was found that (1) texturation does not affect the average saturation current density J0, indicating that the texturation process is equivalent to a simple extension of junction area by a factor of square root of 3 and (2) the vertical junction cell geometry produces a sizable decrease in J0 that, unfortunately, is more than offset by the effects of attendant areal increases.

  3. Dilute Nitrides For 4-And 6- Junction Space Solar Cells

    Science.gov (United States)

    Essig, S.; Stammler, E.; Ronsch, S.; Oliva, E.; Schachtner, M.; Siefer, G.; Bett, A. W.; Dimroth, F.

    2011-10-01

    According to simulations the efficiency of conventional, lattice-matched GaInP/GaInAs/Ge triple-junction space solar cells can be strongly increased by the incorporation of additional junctions. In this way the existing excess current of the Germanium bottom cell can be reduced and the voltage of the stack can be increased. In particular, the use of 1.0 eV materials like GaInNAs opens the door for solar cells with significantly improved conversion efficiency. We have investigated the material properties of GaInNAs grown by metal organic vapour phase epitaxy (MOVPE) and its impact on the quantum efficiency of solar cells. Furthermore we have developed a GaInNAs subcell with a bandgap energy of 1.0 eV and integrated it into a GaInP/GaInAs/GaInNAs/Ge 4-junction and a AlGaInP/GaInP/AlGaInAs/GaInAs/GaInNAs/Ge 6- junction space solar cell. The material quality of the dilute nitride junction limits the current density of these devices to 9.3 mA/cm2 (AM0). This is not sufficient for a 4-junction cell but may lead to current matched 6- junction devices in the future.

  4. Relaxation oscillation logic in Josephson junction circuits

    International Nuclear Information System (INIS)

    Fulton, T.A.

    1981-01-01

    A dc powered, self-resetting Josephson junction logic circuit relying on relaxation oscillations is described. A pair of Josephson junction gates are connected in series, a first shunt is connected in parallel with one of the gates, and a second shunt is connected in parallel with the series combination of gates. The resistance of the shunts and the dc bias current bias the gates so that they are capable of undergoing relaxation oscillations. The first shunt forms an output line whereas the second shunt forms a control loop. The bias current is applied to the gates so that, in the quiescent state, the gate in parallel with the second shunt is at V O, and the other gate is undergoing relaxation oscillations. By controlling the state of the first gate with the current in the output loop of another identical circuit, the invert function is performed

  5. Variability study of Si nanowire FETs with different junction gradients

    Directory of Open Access Journals (Sweden)

    Jun-Sik Yoon

    2016-01-01

    Full Text Available Random dopant fluctuation effects of gate-all-around Si nanowire field-effect transistors (FETs are investigated in terms of different diameters and junction gradients. The nanowire FETs with smaller diameters or shorter junction gradients increase relative variations of the drain currents and the mismatch of the drain currents between source-drain and drain-source bias change in the saturation regime. Smaller diameters decreased current drivability critically compared to standard deviations of the drain currents, thus inducing greater relative variations of the drain currents. Shorter junction gradients form high potential barriers in the source-side lightly-doped extension regions at on-state, which determines the magnitude of the drain currents and fluctuates the drain currents greatly under thermionic-emission mechanism. On the other hand, longer junction gradients affect lateral field to fluctuate the drain currents greatly. These physical phenomena coincide with correlations of the variations between drain currents and electrical parameters such as threshold voltages and parasitic resistances. The nanowire FETs with relatively-larger diameters and longer junction gradients without degrading short channel characteristics are suggested to minimize the relative variations and the mismatch of the drain currents.

  6. Modeling Bloch oscillations in ultra-small Josephson junctions

    Science.gov (United States)

    Vora, Heli; Kautz, Richard; Nam, Sae Woo; Aumentado, Jose

    In a seminal paper, Likharev et al. developed a theory for ultra-small Josephson junctions with Josephson coupling energy (Ej) less than the charging energy (Ec) and showed that such junctions demonstrate Bloch oscillations which could be used to make a fundamental current standard that is a dual of the Josephson volt standard. Here, based on the model of Geigenmüller and Schön, we numerically calculate the current-voltage relationship of such an ultra-small junction which includes various error processes present in a nanoscale Josephson junction such as random quasiparticle tunneling events and Zener tunneling between bands. This model allows us to explore the parameter space to see the effect of each process on the width and height of the Bloch step and serves as a guide to determine whether it is possible to build a quantum current standard of a metrological precision using Bloch oscillations.

  7. Towards quantum signatures in a swept-bias Josephson junction

    Energy Technology Data Exchange (ETDEWEB)

    Losert, Harald; Vogel, Karl; Schleich, Wolfgang P. [Institut fuer Quantenphysik and Center for Integrated Quantum Science and Technology (IQST), Universitaet Ulm, D-89069 Ulm (Germany)

    2016-07-01

    Josephson junctions are one of the best examples for the observation of macroscopic quantum tunneling. The phase difference in a current-biased Josephson junction behaves like the position of a particle in a tilted washboard potential. The escape of this phase-particle corresponds to the voltage switching of the associated junction. Quantum mechanically, the escape from the washboard potential can be explained as tunneling from the ground state, or an excited state. However, it has been shown, that in the case of periodic driving the experimental data for quantum mechanical key features, e.g. Rabi oscillations or energy level quantization, can be reproduced by a completely classical description. Motivated by this discussion, we investigate a swept-bias Josephson junction in the case of a large critical current. In particular, we contrast the switching current distributions resulting from a quantum mechanical and classical description of the time evolution.

  8. Niobium nitride Josephson tunnel junctions with magnesium oxide barriers

    International Nuclear Information System (INIS)

    Shoji, A.; Aoyagi, M.; Kosaka, S.; Shinoki, F.; Hayakawa, H.

    1985-01-01

    Niobium nitride-niobium nitride Josephson tunnel junctions have been fabricated using amorphous magnesium oxide (a-MgO) films as barriers. These junctions have excellent tunneling characteristics. For example, a large gap voltage (V/sub g/ = 5.1 mV), a large product of the maximum critical current and the normal tunneling resistance (I/sub c/R/sub n/ = 3.25 mV), and a small subgap leakage current (V/sub m/ = 45 mV, measured at 3 mV) have been obtained for a NbN/a-MgO/NbN junction. The critical current of this junction remains finite up to 14.5 K

  9. Grúa para obras de gran altura

    Directory of Open Access Journals (Sweden)

    Hochtief, AG

    1961-12-01

    Full Text Available En las construcciones modernas donde las estructuras se extienden predominantemente en altura, caso corriente en los llamados rascacielos, entre los elementos auxiliares de obra se encuentra, en primer lugar, la grúa.

  10. Flere grøntsager og fuldkornsprodukter i skolemad

    DEFF Research Database (Denmark)

    Christensen, Lene Møller; Trolle, Ellen; Lassen, Anne Dahl

    2017-01-01

    Den mad, danske folkeskoleelever køber gennem deres skolers madordninger, indeholder generelt for lidt fuldkorn og for få grøntsager. DTU Fødevareinstituttet har undersøgt seks skolers indsats med f.eks. at bruge flere grøntsager i varme retter og sandwich og at vælge brød, pasta og ris med...

  11. Axial p-n-junctions in nanowires.

    Science.gov (United States)

    Fernandes, C; Shik, A; Byrne, K; Lynall, D; Blumin, M; Saveliev, I; Ruda, H E

    2015-02-27

    The charge distribution and potential profile of p-n-junctions in thin semiconductor nanowires (NWs) were analyzed. The characteristics of screening in one-dimensional systems result in a specific profile with large electric field at the boundary between the n- and p- regions, and long tails with a logarithmic drop in the potential and charge density. As a result of these tails, the junction properties depend sensitively on the geometry of external contacts and its capacity has an anomalously large value and frequency dispersion. In the presence of an external voltage, electrons and holes in the NWs can not be described by constant quasi-Fermi levels, due to small values of the average electric field, mobility, and lifetime of carriers. Thus, instead of the classical Sah-Noice-Shockley theory, the junction current-voltage characteristic was described by an alternative theory suitable for fast generation-recombination and slow diffusion-drift processes. For the non-uniform electric field in the junction, this theory predicts the forward branch of the characteristic to have a non-ideality factor η several times larger than the values 1 < η < 2 from classical theory. Such values of η have been experimentally observed by a number of researchers, as well as in the present work.

  12. Fractional Solitons in Excitonic Josephson Junctions

    Science.gov (United States)

    Su, Jung-Jung; Hsu, Ya-Fen

    The Josephson effect is especially appealing because it reveals macroscopically the quantum order and phase. Here we study this effect in an excitonic Josephson junction: a conjunct of two exciton condensates with a relative phase ϕ0 applied. Such a junction is proposed to take place in the quantum Hall bilayer (QHB) that makes it subtler than in superconductor because of the counterflow of excitonic supercurrent and the interlayer tunneling in QHB. We treat the system theoretically by first mapping it into a pseudospin ferromagnet then describing it by the Landau-Lifshitz-Gilbert equation. In the presence of interlayer tunneling, the excitonic Josephson junction can possess a family of fractional sine-Gordon solitons that resemble the static fractional Josephson vortices in the extended superconducting Josephson junctions. Interestingly, each fractional soliton carries a topological charge Q which is not necessarily a half/full integer but can vary continuously. The resultant current-phase relation (CPR) shows that solitons with Q =ϕ0 / 2 π are the lowest energy states for small ϕ0. When ϕ0 > π , solitons with Q =ϕ0 / 2 π - 1 take place - the polarity of CPR is then switched.

  13. Imaging of the dynamic magnetic structure in a parallel array of shunted Josephson junctions

    DEFF Research Database (Denmark)

    Doderer, T.; Kaplunenko, V. K.; Mygind, Jesper

    1994-01-01

    A one-dimensional (1D) parallel array of shunted Josephson junctions is one of the basic elements in the family of rapid single-flux quantum logic circuits. It was found recently that current steps always show up in the current-voltage curve of the generator junction when an additional bias current...

  14. Antireflection coating design for series interconnected multi-junction solar cells

    International Nuclear Information System (INIS)

    Aiken, Daniel J.

    1999-01-01

    AR coating design for multi-junction solar cells can be more challenging than in the single junction case. Reasons for this are discussed. Analytical expressions used to optimize AR coatings for single junction solar cells are extended for use in monolithic, series interconnected multi-junction solar cell AR coating design. The result is an analytical expression which relates the solar cell performance (through J(sub SC)) directly to the AR coating design through the device reflectance. It is also illustrated how AR coating design can be used to provide an additional degree of freedom for current matching multi-junction devices

  15. Internal resonances in periodically modulated long Josephson junctions

    DEFF Research Database (Denmark)

    Larsen, Britt Hvolbæk; Mygind, Jesper; Ustinov, Alexey V.

    1995-01-01

    Current-voltage (I-V) characteristics of long Josephson junctions with a periodic lattice of localized inhomogeneities are studied. The interaction between the moving fluxons and the inhomogeneities causes resonant steps in the IV-curve. Some of these steps are due to a synchronization to resonant...... Fiske modes in the sub-junctions formed between the inhomogeneities. The voltage positions of the resonant steps oscillate as function of the applied magnetic field with a period corresponding to the inclusion of one magnetic flux quantum, Φ0=h/2e, per sub-junction. A qualitative explanation that takes...

  16. Steady-state properties of Josephson junctions with direct conductivity

    International Nuclear Information System (INIS)

    Zubkov, A.A.; Kupriyanov, M.Y.; Semenov, V.K.

    1981-01-01

    A new criterion for determining the kinetic inductance of Josephson junctions is introduced. The effects of temperature T, the critical temperatures of the superconducting electrodes T/sub c/1 and T/sub c/2, and the weak-link length on the kinetic inductance of ''dirty'' junctions with direct conductivity are analyzed within the framework of the Usadel equations. Numerical calculations show that both a large characteristic voltage and a nearly harmonic dependence of the current on the phase difference of the superconducting-electrode wave functions cannot be obtained by varying the junction parameters

  17. The human myotendinous junction

    DEFF Research Database (Denmark)

    Knudsen, A B; Larsen, M; Mackey, Abigail

    2015-01-01

    The myotendinous junction (MTJ) is a specialized structure in the musculotendinous system, where force is transmitted from muscle to tendon. Animal models have shown that the MTJ takes form of tendon finger-like processes merging with muscle tissue. The human MTJ is largely unknown and has never...... been described in three dimensions (3D). The aim of this study was to describe the ultrastructure of the human MTJ and render 3D reconstructions. Fourteen subjects (age 25 ± 3 years) with isolated injury of the anterior cruciate ligament (ACL), scheduled for reconstruction with a semitendinosus...

  18. Tight junctions and human diseases.

    Science.gov (United States)

    Sawada, Norimasa; Murata, Masaki; Kikuchi, Keisuke; Osanai, Makoto; Tobioka, Hirotoshi; Kojima, Takashi; Chiba, Hideki

    2003-09-01

    Tight junctions are intercellular junctions adjacent to the apical end of the lateral membrane surface. They have two functions, the barrier (or gate) function and the fence function. The barrier function of tight junctions regulates the passage of ions, water, and various macromolecules, even of cancer cells, through paracellular spaces. The barrier function is thus relevant to edema, jaundice, diarrhea, and blood-borne metastasis. On the other hand, the fence function maintains cell polarity. In other words, tight junctions work as a fence to prevent intermixing of molecules in the apical membrane with those in the lateral membrane. This function is deeply involved in cancer cell biology, in terms of loss of cell polarity. Of the proteins comprising tight junctions, integral membrane proteins occludin, claudins, and JAMs have been recently discovered. Of these molecules, claudins are exclusively responsible for the formation of tight-junction strands and are connected with the actin cytoskeleton mediated by ZO-1. Thus, both functions of tight junctions are dependent on the integrity of the actin cytoskeleton as well as ATP. Mutations in the claudin14 and the claudin16 genes result in hereditary deafness and hereditary hypomagnesemia, respectively. Some pathogenic bacteria and viruses target and affect the tight-junction function, leading to diseases. In this review, the relationship between tight junctions and human diseases is summarized.

  19. Gap junctions and motor behavior

    DEFF Research Database (Denmark)

    Kiehn, Ole; Tresch, Matthew C.

    2002-01-01

    The production of any motor behavior requires coordinated activity in motor neurons and premotor networks. In vertebrates, this coordination is often assumed to take place through chemical synapses. Here we review recent data suggesting that electrical gap-junction coupling plays an important role...... in coordinating and generating motor outputs in embryonic and early postnatal life. Considering the recent demonstration of a prevalent expression of gap-junction proteins and gap-junction structures in the adult mammalian spinal cord, we suggest that neuronal gap-junction coupling might also contribute...... to the production of motor behavior in adult mammals....

  20. High-efficiency thermal switch based on topological Josephson junctions

    Science.gov (United States)

    Sothmann, Björn; Giazotto, Francesco; Hankiewicz, Ewelina M.

    2017-02-01

    We propose theoretically a thermal switch operating by the magnetic-flux controlled diffraction of phase-coherent heat currents in a thermally biased Josephson junction based on a two-dimensional topological insulator. For short junctions, the system shows a sharp switching behavior while for long junctions the switching is smooth. Physically, the switching arises from the Doppler shift of the superconducting condensate due to screening currents induced by a magnetic flux. We suggest a possible experimental realization that exhibits a relative temperature change of 40% between the on and off state for realistic parameters. This is a factor of two larger than in recently realized thermal modulators based on conventional superconducting tunnel junctions.

  1. Defect formation in long Josephson junctions

    DEFF Research Database (Denmark)

    Gordeeva, Anna; Pankratov, Andrey

    2010-01-01

    We study numerically a mechanism of vortex formation in a long Josephson junction within the framework of the one-dimensional sine-Gordon model. This mechanism is switched on below the critical temperature. It is shown that the number of fluxons versus velocity of cooling roughly scales according...... to the power law with the exponent of either 0.25 or 0.5 depending on the temperature variation in the critical current density....

  2. Spin-dependent quasiparticle tunneling in junction superconductor-isolator-ferromagnetic

    International Nuclear Information System (INIS)

    Shlapak, Yu.V.; Shaternik, V.E.; Rudenko, E.M.

    2001-01-01

    The influence of Andreev reflection of quasiparticles in transparent tunnel junctions of superconductor-isolator-ferromagnetic on electric-current transport is studied within the framework of the Blonder-Tinkham-Klapwijk (BTK) model. It's obtained that current and signal-to-noise ratio can be increased for the memory cell by using in it the double-barrier tunnel junction ferromagnetic-isolator-superconductor-isolator-ferromagnetic instead off the usual tunnel junction ferromagnetic-isolator-ferromagnetic. The evolution of non-linear (tunnel-type) current-voltage characteristics with increasing of the junction transparency is described. (orig.)

  3. Neutron irradiation effects on mechanical properties in SA508 Gr4N high strength low alloy steel

    International Nuclear Information System (INIS)

    Kim, Minchul; Lee, Kihyoung; Park, Sanggyu; Choi, Kwonjae; Lee, Bongsang

    2012-01-01

    The Reactor Pressure Vessel (RPV) is the key component in determining the lifetime of nuclear power plants because it is subject to the significant aging degradation by irradiation and thermal aging, and there is no practical method for replacing that component. Advanced reactors with much larger capacity than current reactor require the usage of higher strength materials inevitably. The SA508 Gr.4N Ni Cr Mo low alloy steel, in which Ni and Cr contents are larger than in conventional RPV steels, could be a promising RPV material offering improved strength and toughness from its tempered martensitic microstructure. For a structural integrity of RPV, the effect of neutron irradiation on the material property is one of the key issues. The RPV materials suffer from the significant degradation of transition properties by the irradiation embrittlement when its strength is increased by a hardening mechanism. Therefore, the potential for application of SA508 Gr.4N steel as the structural components for nuclear power reactors depends on its ability to maintain adequate transition properties against the operating neutron does. However, it is not easy to fine the data on the irradiation effect on the mechanical properties of SA508 Gr.4N steel. In this study, the irradiation embrittlement of SA508 Gr.4N Ni Cr Mo low alloy steel was evaluated by using specimens irradiated in research reactor. For comparison, the variations of mechanical properties by neutron irradiation for commercial SA508 Gr.3 Mn Mo Ni low alloy steel were also evaluated

  4. Resonator coupled Josephson junctions; parametric excitations and mutual locking

    DEFF Research Database (Denmark)

    Jensen, H. Dalsgaard; Larsen, A.; Mygind, Jesper

    1991-01-01

    Self-pumped parametric excitations and mutual locking in systems of Josephson tunnel junctions coupled to multimode resonators are reported. For the very large values of the coupling parameter, obtained with small Nb-Al2O3-Nb junctions integrated in superconducting microstrip resonators, the DC I......-V characteristic shows an equidistant series of current steps generated by subharmonic pumping of the fundamental resonator mode. This is confirmed by measurement of frequency and linewidth of the emitted Josephson radiation...

  5. Dynamics of fractional vortices in long Josephson junctions

    International Nuclear Information System (INIS)

    Gaber, Tobias

    2007-01-01

    In this thesis static and dynamic properties of fractional vortices in long Josephson junctions are investigated. Fractional vortices are circulating supercurrents similar to the well-known Josephson fluxons. Yet, they show the distinguishing property of carrying only a fraction of the magnetic flux quantum. Fractional vortices are interesting non-linear objects. They spontaneously appear and are pinned at the phase discontinuity points of so called 0-κ junctions but can be bend or flipped by external forces like bias currents or magnetic fields. 0-κ junctions and fractional vortices are generalizations of the well-known 0-π junctions and semifluxons, where not only phase jumps of pi but arbitrary values denoted by kappa are considered. By using so-called artificial 0-κ junctions that are based on standard Nb-AlO x -Nb technology the classical dynamics of fractional vortices has been investigated experimentally for the very first time. Here, half-integer zero field steps could be observed. These voltage steps on the junction's current-voltage characteristics correspond to the periodic flipping/hopping of fractional vortices. In addition, the oscillatory eigenmodes of fractional vortices were investigated. In contrast to fluxons fractional vortices have an oscillatory eigenmode with a frequency within the plasma gap. Using resonance spectroscopy the dependence of the eigenmode frequency on the flux carried by the vortex and an applied bias current was determined. (orig.)

  6. Junction detection and pathway selection

    Science.gov (United States)

    Peck, Alex N.; Lim, Willie Y.; Breul, Harry T.

    1992-02-01

    The ability to detect junctions and make choices among the possible pathways is important for autonomous navigation. In our script-based navigation approach where a journey is specified as a script of high-level instructions, actions are frequently referenced to junctions, e.g., `turn left at the intersection.' In order for the robot to carry out these kind of instructions, it must be able (1) to detect an intersection (i.e., an intersection of pathways), (2) know that there are several possible pathways it can take, and (3) pick the pathway consistent with the high level instruction. In this paper we describe our implementation of the ability to detect junctions in an indoor environment, such as corners, T-junctions and intersections, using sonar. Our approach uses a combination of partial scan of the local environment and recognition of sonar signatures of certain features of the junctions. In the case where the environment is known, we use additional sensor information (such as compass bearings) to help recognize the specific junction. In general, once a junction is detected and its type known, the number of possible pathways can be deduced and the correct pathway selected. Then the appropriate behavior for negotiating the junction is activated.

  7. Mixing in T-junctions

    NARCIS (Netherlands)

    Kok, Jacobus B.W.; van der Wal, S.

    1996-01-01

    The transport processes that are involved in the mixing of two gases in a T-junction mixer are investigated. The turbulent flow field is calculated for the T-junction with the k- turbulence model by FLOW3D. In the mathematical model the transport of species is described with a mixture fraction

  8. Dynamics of Josephson junction arrays

    International Nuclear Information System (INIS)

    Hadley, P.

    1989-01-01

    The dynamics of Josephson junction arrays is a topic that lies at the intersection of the fields of nonlinear dynamics and Josephson junction technology. The series arrays considered here consist of several rapidly oscillating Josephson junctions where each junction is coupled equally to every other junction. The purpose of this study is to understand phaselocking and other cooperative dynamics of this system. Previously, little was known about high dimensional nonlinear systems of this sort. Numerical simulations are used to study the dynamics of these arrays. Three distinct types of periodic solutions to the array equations were observed as well as period doubled and chaotic solutions. One of the periodic solutions is the symmetric, in-phase solution where all of the junctions oscillate identically. The other two periodic solutions are symmetry-broken solutions where all of the junction do not oscillate identically. The symmetry-broken solutions are highly degenerate. As many as (N - 1) stable solutions can coexist for an array of N junctions. Understanding the stability of these several solutions and the transitions among them is vital to the design of useful devices

  9. Nonlinearity in superconductivity and Josephson junctions

    International Nuclear Information System (INIS)

    Lazarides, N.

    1995-01-01

    Within the framework of the Bardeen, Cooper and Schrieffers (BCS) theory, the influence of anisotropy on superconducting states are investigated. Crystal anisotropy exists in un-conventional low temperature superconductors as e.g. U 1-x Th x Be 13 and in high temperature superconductors. Starting from a phenomenological pairing interaction of the electrons or holes, the BCS approach is used to derive a set of coupled nonlinear algebraic equations for the momentum dependent gap parameter. The emphasis is put on bifurcation phenomena between s-, d-wave and mixed s- and d-wave symmetry and the influence on measurable quantities as the electron specific heat, spin susceptibility and Josephson tunnelling. Pitch-fork and perturbed pitch-fork bifurcations have been found separating s- and d-wave superconducting states from mixed s- and d-wave states. The additional superconducting states give rise to jumps in the electron specific heat below the transition temperature. These jumps are rounded in the case of perturbed pitch-fork bifurcations. An experiment to measure the sign of the interlayer interaction using dc SQUIDS is suggested. The Ambegaokar-Baratoff formalism has been used for calculating the quasiparticle current and the two phase coherent tunnelling currents in a Josephson junction made of anisotropic superconductors. It is shown that anisotropy can lead to a reduction in the product of the normal resistance and the critical current. For low voltages across the junction the usual resistively shunted Josephson model can be used. Finally, bunching in long circular Josephson junctions and suppression of chaos in point junctions have been investigated. (au) 113 refs

  10. Gr/gr deletions on Y-chromosome correlate with male infertility: an original study, meta-analyses, and trial sequential analyses

    Science.gov (United States)

    Bansal, Sandeep Kumar; Jaiswal, Deepika; Gupta, Nishi; Singh, Kiran; Dada, Rima; Sankhwar, Satya Narayan; Gupta, Gopal; Rajender, Singh

    2016-02-01

    We analyzed the AZFc region of the Y-chromosome for complete (b2/b4) and distinct partial deletions (gr/gr, b1/b3, b2/b3) in 822 infertile and 225 proven fertile men. We observed complete AZFc deletions in 0.97% and partial deletions in 6.20% of the cases. Among partial deletions, the frequency of gr/gr deletions was the highest (5.84%). The comparison of partial deletion data between cases and controls suggested a significant association of the gr/gr deletions with infertility (P = 0.0004); however, the other partial deletions did not correlate with infertility. In cohort analysis, men with gr/gr deletions had a relatively poor sperm count (54.20 ± 57.45 million/ml) in comparison to those without deletions (72.49 ± 60.06), though the difference was not statistically significant (p = 0.071). Meta-analysis also suggested that gr/gr deletions are significantly associated with male infertility risk (OR = 1.821, 95% CI = 1.39-2.37, p = 0.000). We also performed trial sequential analyses that strengthened the evidence for an overall significant association of gr/gr deletions with the risk of male infertility. Another meta-analysis suggested a significant association of the gr/gr deletions with low sperm count. In conclusion, the gr/gr deletions show a strong correlation with male infertility risk and low sperm count, particularly in the Caucasian populations.

  11. Stofmisbrugsbehandling blandt grønlændere i Danmark

    DEFF Research Database (Denmark)

    Baviskar, Siddhartha

    2016-01-01

    undersøgelsen af en forløbsanalyse af en udvalgt gruppe på 221 grønlændere over en 5-årig periode, 2007-2011. Denne gruppe ankom for første gang til Danmark i 2007 og opholdt sig i landet i alle årene til og med 2011. Dermed opnår vi viden om både graden af sårbarhed blandt grønlænderne på stofmisbrugsområdet...... målt i forhold til de øvrige danskere, og hvordan grønlændernes sårbarhed ændrer sig over tid i Danmark. Oplysninger vedrørende stofmisbrugsbehandling stammer fra Register over stofmisbrugere i behandling (SIB), som er et register over borgere, der gennem deres kommune er visiteret til behandling...

  12. Gründerzeit – Od skandalu do stylu

    OpenAIRE

    Jacek K. Knothe

    2017-01-01

    Przyjmuje się, iż architektura ‘okresu założycieli’ – ‘Grűnderzeit’ występowała w Niemczech w latach 1870-1920, to jest dłużej niż do zakończenia I wojny światowej stanowiącej swoistą cezurę XX wieku. Na terenie Polski, w miarę rozprzestrzeniania się przychodzącego z Europy postępu technicznego, styl Grűnderzeit następował pod koniec XIX wieku z niewielkim tylko opóźnieniem w stosunku do Niemiec, a wraz z nim jeszcze 12 stylów okresu historyzmu. Budynki z okresu Grűnderzeit, powszechnie obecn...

  13. Gráficos difusos versus gráficos tradicionales para el control de procesos por atributos

    Directory of Open Access Journals (Sweden)

    Vivian Lorena Chud Pantoja

    2017-05-01

    Full Text Available Los gráficos de control son una buena herramienta controlar procesos. Han sido ampliamente utilizados —y aún ahora se utilizan— en la mayoría de los procesos manufactureros. Sin embargo, se han presentado propuestas orientadas a mejorar el desempeño de los mismos, principalmente en los aspectos referentes a la incertidumbre y ambigüedad existente en los datos. En este sentido, los gráficos de control difusos son una alternativa valiosa para mejorar el desempeño de los gráficos tradicionales. Se presenta, entonces, una comparación de los gráficos de control Shewhart (tradicionales y los gráficos de control difusos por atributos, con el objetivo de establecer las similitudes y diferencias existentes entre las dos metodologías. De esta manera, se desarrolla un ejemplo numérico de un gráfico tradicional c y gráficos difusos construidos a partir de las siguientes técnicas de transformación: moda difusa, mediana difusa, rango medio difuso y enfoque difuso directo. Para realizar una comparación se utilizaron las reglas de evaluación de patrones de comportamiento no natural en un gráfico de control. A partir de los resultados de la comparación realizada en esta investigación se concluye que al utilizar las reglas de evaluación en ambos gráficos con los mismos datos no se obtienen diferencias en los resultados. (Abstract. Control charts are the main tool in the process control. They have been widely used and are still used in most manufacturing processes. However, proposals have emerged that seek to improve their performance, mainly about topics which involve the vagueness and uncertainty of the data. In this sense, fuzzy control charts area an important alternative for improve the performance of control charts. We present a comparison of Shewhart control charts (traditional and fuzzy control charts for attributes with the aim of establishing similarities and differences between the two methodologies. We develop a numerical

  14. Single-electron tunnel junction array

    International Nuclear Information System (INIS)

    Likharev, K.K.; Bakhvalov, N.S.; Kazacha, G.S.; Serdyukova, S.I.

    1989-01-01

    The authors have carried out an analysis of statics and dynamics of uniform one-dimensional arrays of ultrasmall tunnel junctions. The correlated single-electron tunneling in the junctions of the array results in its behavior qualitatively similar to that of the Josephson transmission line. In particular, external electric fields applied to the array edges can inject single-electron-charged solitons into the array interior. Shape of such soliton and character of its interactions with other solitons and the array edges are very similar to those of the Josephson vortices (sine-Gordon solitons) in the Josephson transmission line. Under certain conditions, a coherent motion of the soliton train along the array is possible, resulting in generation of narrowband SET oscillations with frequency f/sub s/ = /e where is the dc current flowing along the array

  15. Electron transport in doped fullerene molecular junctions

    Science.gov (United States)

    Kaur, Milanpreet; Sawhney, Ravinder Singh; Engles, Derick

    The effect of doping on the electron transport of molecular junctions is analyzed in this paper. The doped fullerene molecules are stringed to two semi-infinite gold electrodes and analyzed at equilibrium and nonequilibrium conditions of these device configurations. The contemplation is done using nonequilibrium Green’s function (NEGF)-density functional theory (DFT) to evaluate its density of states (DOS), transmission coefficient, molecular orbitals, electron density, charge transfer, current, and conductance. We conclude from the elucidated results that Au-C16Li4-Au and Au-C16Ne4-Au devices behave as an ordinary p-n junction diode and a Zener diode, respectively. Moreover, these doped fullerene molecules do not lose their metallic nature when sandwiched between the pair of gold electrodes.

  16. Grønt regnskab for boligområder

    DEFF Research Database (Denmark)

    Jensen, O.M.

    Grønne regnskaber har vundet indpas i virksomheder, kommuner og boligområder. Med denne rapport foreligger der en model og en metode for opstilling af et grønt regnskab, der kan anvendes på alle typer af boliger, boligbebyggelser og boligområder. Et tilhørende regneark kan hjemtages på SBI´s hjem......´s hjemmeside 'www.sbi.dk', eller det kan opstilles ved hjælp af anvisningerne i rapporten. Rapporten henvender sig til alle, der arbejder med energiledelse, boligforvaltning, økologisk boligbyggeri, byfornyelse, miljødebat og Agenda 21-arbejde....

  17. Oracle JDeveloper 11gR2 Cookbook

    CERN Document Server

    Haralabidis, Nick

    2012-01-01

    "Oracle JDeveloper 11gR2 Cookbook" is a practical cookbook which goes beyond the basics with immediately applicable recipes for building ADF applications at an intermediate-to-advanced level. If you are a JavaEE developer who wants to go beyond the basics of building ADF applications with Oracle JDeveloper 11gR2 and get hands on with practical recipes, this book is for you. You should be comfortable with general Java development principles, the JDeveloper IDE, and ADF basics

  18. Oracle BAM 11gR1 Handbook

    CERN Document Server

    Wang, Pete

    2012-01-01

    "Oracle BAM 11gR1 Handbook" is a practical best practices tutorial focused entirely on Oracle Business Activity Monitoring. An intermediate-to-advanced guide, step-by-step instructions and an accompanying demo project will help SOA report developers through application development and producing dashboards and reports. If you are a developer/report developer or SOA Architect who wants to learn valuable Oracle BAM best practices for monitoring your operations in real time, then "Oracle BAM 11gR1 Handbook" is for you. Administrators will also find the book useful. You should already be comfortabl

  19. Doping enhanced barrier lowering in graphene-silicon junctions

    Science.gov (United States)

    Zhang, Xintong; Zhang, Lining; Chan, Mansun

    2016-06-01

    Rectifying properties of graphene-semiconductor junctions depend on the Schottky barrier height. We report an enhanced barrier lowering in graphene-Si junction and its essential doping dependence in this paper. The electric field due to ionized charge in n-type Si induces the same type doping in graphene and contributes another Schottky barrier lowering factor on top of the image-force-induced lowering (IFIL). We confirm this graphene-doping-induced lowering (GDIL) based on well reproductions of the measured reverse current of our fabricated graphene-Si junctions by the thermionic emission theory. Excellent matching between the theoretical predictions and the junction data of the doping-concentration dependent barrier lowering serves as another evidence of the GDIL. While both GDIL and IFIL are enhanced with the Si doping, GDIL exceeds IFIL with a threshold doping depending on the as-prepared graphene itself.

  20. Negative tunnel magnetoresistance and spin transport in ferromagnetic graphene junctions

    International Nuclear Information System (INIS)

    Zou Jianfei; Jin Guojun; Ma Yuqiang

    2009-01-01

    We study the tunnel magnetoresistance (TMR) and spin transport in ferromagnetic graphene junctions composed of ferromagnetic graphene (FG) and normal graphene (NG) layers. It is found that the TMR in the FG/NG/FG junction oscillates from positive to negative values with respect to the chemical potential adjusted by the gate voltage in the barrier region when the Fermi level is low enough. Particularly, the conventionally defined TMR in the FG/FG/FG junction oscillates periodically from a positive to negative value with increasing the barrier height at any Fermi level. The spin polarization of the current through the FG/FG/FG junction also has an oscillating behavior with increasing barrier height, whose oscillating amplitude can be modulated by the exchange splitting in the ferromagnetic graphene.

  1. Negative tunnel magnetoresistance and spin transport in ferromagnetic graphene junctions.

    Science.gov (United States)

    Zou, Jianfei; Jin, Guojun; Ma, Yu-Qiang

    2009-03-25

    We study the tunnel magnetoresistance (TMR) and spin transport in ferromagnetic graphene junctions composed of ferromagnetic graphene (FG) and normal graphene (NG) layers. It is found that the TMR in the FG/NG/FG junction oscillates from positive to negative values with respect to the chemical potential adjusted by the gate voltage in the barrier region when the Fermi level is low enough. Particularly, the conventionally defined TMR in the FG/FG/FG junction oscillates periodically from a positive to negative value with increasing the barrier height at any Fermi level. The spin polarization of the current through the FG/FG/FG junction also has an oscillating behavior with increasing barrier height, whose oscillating amplitude can be modulated by the exchange splitting in the ferromagnetic graphene.

  2. Molecular electronics: some views on transport junctions and beyond.

    Science.gov (United States)

    Joachim, Christian; Ratner, Mark A

    2005-06-21

    The field of molecular electronics comprises a fundamental set of issues concerning the electronic response of molecules as parts of a mesoscopic structure and a technology-facing area of science. We will overview some important aspects of these subfields. The most advanced ideas in the field involve the use of molecules as individual logic or memory units and are broadly based on using the quantum state space of the molecule. Current work in molecular electronics usually addresses molecular junction transport, where the molecule acts as a barrier for incoming electrons: This is the fundamental Landauer idea of "conduction as scattering" generalized to molecular junction structures. Another point of view in terms of superexchange as a guiding mechanism for coherent electron transfer through the molecular bridge is discussed. Molecules generally exhibit relatively strong vibronic coupling. The last section of this overview focuses on vibronic effects, including inelastic electron tunneling spectroscopy, hysteresis in junction charge transport, and negative differential resistance in molecular transport junctions.

  3. Junction temperature estimation for an advanced active power cycling test

    DEFF Research Database (Denmark)

    Choi, Uimin; Blaabjerg, Frede; Jørgensen, S.

    2015-01-01

    estimation method using on-state VCE for an advanced active power cycling test is proposed. The concept of the advanced power cycling test is explained first. Afterwards the junction temperature estimation method using on-state VCE and current is presented. Further, the method to improve the accuracy...... of the maximum junction temperature estimation is also proposed. Finally, the validity and effectiveness of the proposed method is confirmed by experimental results.......On-state collector-emitter voltage (VCE) is a good indicator to determine the wear-out condition of power device modules. Further, it is a one of the Temperature Sensitive Electrical Parameters (TSEPs) and thus can be used for junction temperature estimation. In this paper, the junction temperature...

  4. ALTERNATIVE MATERIALS FOR RAMP-EDGE SNS JUNCTIONS

    International Nuclear Information System (INIS)

    Jia, Q.; Fan, Y.; Gim, Y.

    1999-01-01

    We report on the processing optimization and fabrication of ramp-edge high-temperature superconducting junctions by using alternative materials for both superconductor electrodes and normal-metal barrier. By using Ag-doped YBa 2 Cu 3 O 7-x (Ag:YBCO) as electrodes and a cation-modified compound of (Pr y Gd 0.6-y )Ca 0.4 Ba 1.6 La 0.4 Cu 3 O 7 (y = 0.4, 0.5, and 0.6) as a normal-metal barrier, high-temperature superconducting Josephson junctions have been fabricated in a ramp-edge superconductor/normal-metal/superconductor (SNS) configuration. By using Ag:YBCO as electrodes, we have found that the processing controllability /reproducibility and the stability of the SNS junctions are improved substantially. The junctions fabricated with these alternative materials show well-defined RSJ-like current vs voltage characteristics at liquid nitrogen temperature

  5. AlGaAs/InGaAlP tunnel junctions for multijunction solar cells

    Energy Technology Data Exchange (ETDEWEB)

    SHARPS,P.R.; LI,N.Y.; HILLS,J.S.; HOU,H.; CHANG,PING-CHIH; BACA,ALBERT G.

    2000-05-16

    Optimization of GaInP{sub 2}/GaAs dual and GaInP{sub 2}/GaAs/Ge triple junction cells, and development of future generation monolithic multi-junction cells will involve the development of suitable high bandgap tunnel junctions. There are three criteria that a tunnel junction must meet. First, the resistance of the junction must be kept low enough so that the series resistance of the overall device is not increased. For AMO, 1 sun operation, the tunnel junction resistance should be below 5 x 10{sup {minus}2} {Omega}-cm. Secondly, the peak current density for the tunnel junction must also be larger than the J{sub sc} of the cell so that the tunnel junction I-V curve does not have a deleterious effect on the I-V curve of the multi-junction device. Finally, the tunnel junction must be optically transparent, i.e., there must be a minimum of optical absorption of photons that will be collected by the underlying subcells. The paper reports the investigation of four high bandgap tunnel junctions grown by metal-organic chemical vapor deposition.

  6. Nature of inhomogeneous states in superconducting junctions

    International Nuclear Information System (INIS)

    Ivlev, B.I.; Kopnin, N.B.

    1982-01-01

    A superconducting structure which arises in a superconducting film under a strong injection of a current through a tunnel junction is considered. If the current density in the film exceeds the critical Ginzburg-Landau value, an inhomogeneous resistive state with phase-slip centers can arise in it. This state is charcterized by the presence of regions with different chemical potentials of the Cooper pairs. These shifts of the pair chemical potential and the nonuniform structure of the order parameter may account for the so-called multigap states which have been observed experimentally

  7. Simulations of fine structures on the zero field steps of Josephson tunnel junctions

    DEFF Research Database (Denmark)

    Scheuermann, M.; Chi, C. C.; Pedersen, Niels Falsig

    1986-01-01

    Fine structures on the zero field steps of long Josephson tunnel junctions are simulated for junctions with the bias current injected into the junction at the edges. These structures are due to the coupling between self-generated plasma oscillations and the traveling fluxon. The plasma oscillations...... are generated by the interaction of the bias current with the fluxon at the junction edges. On the first zero field step, the voltages of successive fine structures are given by Vn=[h-bar]/2e(2omegap/n), where n is an even integer. Applied Physics Letters is copyrighted by The American Institute of Physics....

  8. Attenuated bioluminescent Brucella melitensis mutants GR019 (virB4), GR024 (galE), and GR026 (BMEI1090-BMEI1091) confer protection in mice.

    Science.gov (United States)

    Rajashekara, Gireesh; Glover, David A; Banai, Menachem; O'Callaghan, David; Splitter, Gary A

    2006-05-01

    In vivo bioluminescence imaging is a persuasive approach to investigate a number of issues in microbial pathogenesis. Previously, we have applied bioluminescence imaging to gain greater insight into Brucella melitensis pathogenesis. Endowing Brucella with bioluminescence allowed direct visualization of bacterial dissemination, pattern of tissue localization, and the contribution of Brucella genes to virulence. In this report, we describe the pathogenicity of three attenuated bioluminescent B. melitensis mutants, GR019 (virB4), GR024 (galE), and GR026 (BMEI1090-BMEI1091), and the dynamics of bioluminescent virulent bacterial infection following vaccination with these mutants. The virB4, galE, and BMEI1090-BMEI1091 mutants were attenuated in interferon regulatory factor 1-deficient (IRF-1(-/-)) mice; however, only the GR019 (virB4) mutant was attenuated in cultured macrophages. Therefore, in vivo imaging provides a comprehensive approach to identify virulence genes that are relevant to in vivo pathogenesis. Our results provide greater insights into the role of galE in virulence and also suggest that BMEI1090 and downstream genes constitute a novel set of genes involved in Brucella virulence. Survival of the vaccine strain in the host for a critical period is important for effective Brucella vaccines. The galE mutant induced no changes in liver and spleen but localized chronically in the tail and protected IRF-1(-/-) and wild-type mice from virulent challenge, implying that this mutant may serve as a potential vaccine candidate in future studies and that the direct visualization of Brucella may provide insight into selection of improved vaccine candidates.

  9. Effect of single Abrikosov vortices on the properties of Josephson tunnel junctions

    International Nuclear Information System (INIS)

    Golubov, A.A.; Kupriyanov, M.Yu.

    1987-01-01

    The effect of single Abrikosov vortices, trapped in the electrodes of a Josephson tunnel junction perpendicularly to the junction surface, on the tunnel current through the junction is studied within the framework of the microscopic theory. The current-voltage characteristic and the critical junction current I c are calculated for temperatures 0 c . It is shown that if the vortices at the junction are misaligned, singularities on the current-voltage characteristic appear at eV Δ (T), and in some cases the magnitude of suppression of I c may be of the order of magnitude of I c itself. The temperature dependence of the critical current is calculated for the case of one of the electrodes being a two-dimensional superconducting film in which the creation of opposite sign vortex pairs is significant

  10. R.f.-induced steps in mutually coupled, two-dimensional distributed Josephson tunnel junctions

    International Nuclear Information System (INIS)

    Klein, U.; Dammschneider, P.

    1991-01-01

    This paper reports on the amplitudes of the current steps in the I-V characteristics of mutually coupled two-dimensional distributed Josephson tunnel junctions driven by microwaves. For this purpose we use a numerical computation algorithm based on a planar resonator model for the individual Josephson tunnel junctions to calculate the d.c. current density distribution. In addition to the fundamental microwave frequency, harmonic contents of the tunneling current are also considered. The lateral dimensions of the individual junctions are small compared to the microwave wavelength and the Josephson penetration depth, giving an almost constant current density distribution. Therefore, the coupled junctions can give much greater step amplitudes than a single junction with an equal tunneling area, because of their nonuniform current density distribution

  11. CRTC2 Is a Coactivator of GR and Couples GR and CREB in the Regulation of Hepatic Gluconeogenesis.

    Science.gov (United States)

    Hill, Micah J; Suzuki, Shigeru; Segars, James H; Kino, Tomoshige

    2016-01-01

    Glucocorticoid hormones play essential roles in the regulation of gluconeogenesis in the liver, an adaptive response that is required for the maintenance of circulating glucose levels during fasting. Glucocorticoids do this by cooperating with glucagon, which is secreted from pancreatic islets to activate the cAMP-signaling pathway in hepatocytes. The cAMP-response element-binding protein (CREB)-regulated transcription coactivator 2 (CRTC2) is a coactivator known to be specific to CREB and plays a central role in the glucagon-mediated activation of gluconeogenesis in the early phase of fasting. We show here that CRTC2 also functions as a coactivator for the glucocorticoid receptor (GR). CRTC2 strongly enhances GR-induced transcriptional activity of glucocorticoid-responsive genes. CRTC2 physically interacts with the ligand-binding domain of the GR through a region spanning amino acids 561-693. Further, CRTC2 is required for the glucocorticoid-associated cooperative mRNA expression of the glucose-6-phosphatase, a rate-limiting enzyme for hepatic gluconeogenesis, by facilitating the attraction of GR and itself to its promoter region already occupied by CREB. CRTC2 is required for the maintenance of blood glucose levels during fasting in mice by enhancing the GR transcriptional activity on both the G6p and phosphoenolpyruvate carboxykinase (Pepck) genes. Finally, CRTC2 modulates the transcriptional activity of the progesterone receptor, indicating that it may influence the transcriptional activity of other steroid/nuclear receptors. Taken together, these results reveal that CRTC2 plays an essential role in the regulation of hepatic gluconeogenesis through coordinated regulation of the glucocorticoid/GR- and glucagon/CREB-signaling pathways on the key genes G6P and PEPCK.

  12. IT-kriminalitet kender ingen grænser

    DEFF Research Database (Denmark)

    Langsted, Lars Bo

    2016-01-01

    I dag foregår mange kriminelle handlinger via internettet uden at der sættes mange spor i den fysiske verden. Samtidig kender internettet i sagens natur ingen grænser, og det giver udfordringer både for lovgiver, politi, anklagemyndighed og den enkelte borger....

  13. Die Brustflosse des Grönlandswales (Balaena mysticetus L.)

    NARCIS (Netherlands)

    Kükenthal, W.

    1922-01-01

    Das Studium der Brustflosse des Grönlandswales hat zu Fragen von allgemeinerem Interesse geführt. Ihre kurze und breite Form sowie ihre anscheinende Fünffingerigkeit, die ausserdem nur noch beim südlichen Glattwal (Balaena australis) vorkommt, liess sie ursprünglicher erscheinen als die schlankere

  14. Hägune vesi / Igor Gräzin

    Index Scriptorium Estoniae

    Gräzin, Igor, 1952-

    2005-01-01

    Riigikogu liikme sõnul teostavad AS-i Tallinna Vesi aktsiate müüki samad inimesed, kelle tegevuse tulemusena sai linnapea Tõnis Palts maksuameti ettekirjutuse 12 miljoni suuruses summas. I. Gräzin on esitanud arupärimise, miks ei korraldatud konkurssi juriidiliste firmade vahel, miks valiti just see firma, kuid saadud vastused teda ei rahulda

  15. Igor Gräzin predlagajet suditsja s glavoi PASE

    Index Scriptorium Estoniae

    2007-01-01

    Riigikogu liige Igor Gräzin arvab, et Eesti võiks kaaluda võimalust anda kohtusse ENPA president Rene van der Linden, kes on laimanud Eesti riiki. Riigikogu esimehe Ene Ergma kirjast ENPA presidendile Rene van Lindenile ja tema vastusest

  16. Common Concern for retsudviklingen i Grønland

    DEFF Research Database (Denmark)

    Basse, Ellen Margrethe; Sommer, Tine

    2013-01-01

    Artiklen behandler indledningsvis de komplekse kompetenceforhold, der er tale om i Grønland, og den udfordring som inuitterne står over for som konsekvens af klimaændringer og råstof- og olieindvindingsinteresser. Deres internationale menneskerettigheder og de globale miljøretlige forpligtelser o...

  17. An electrochemical study of the flow rate effect on the oxide film of SA106 Gr.C piping

    International Nuclear Information System (INIS)

    Hong, S. M.; Kim, J. H.; Kim, I. S.

    2002-01-01

    Effect of water flow rate on the oxide film of SA106 Gr.C piping was evaluated quantitatively through electrochemical method. It was carried out with weight change experiments, polarization tests, and EIS tests with rig that simulates water flow. Without water flow, the oxide film is so stable that it effectively blocks current exchange. With water flow, the oxide film was damaged and electrochemical current density and oxide film properties, C dl and R p were significantly changed

  18. Stability of fluxon motion in long Josephson junctions at high bias

    DEFF Research Database (Denmark)

    Pagano, S.; Sørensen, Mads Peter; Christiansen, Peter Leth

    1988-01-01

    In long Josephson junctions the motion of fluxons is revealed by the existence of current steps, zero-field steps, in the current-voltage characteristics. In this paper we investigate the stability of the fluxon motion when high values of the current bias are involved. The investigation is carried...... dissipations and of the junction length on the switching-current value is investigated. A simple boundary model is able to describe, for junctions of overlap geometry, the qualitative dependence of the switching current on the system parameters....

  19. Repulsive fluxons in a stack of Josephson junctions perturbed by a cavity

    DEFF Research Database (Denmark)

    Madsen, Søren; Pedersen, Niels Falsig; Christiansen, Peter Leth

    2008-01-01

    The BSCCO type intrinsic Josephson junction has been modeled as a stack of inductively coupled long Josephson junctions, which were described by a system of coupled sine-Gordon equations. In a system of 10 long Josephson junctions coupled to a linear cavity, we numerically investigate how...... of the inductive coupling strength, we investigate the cavity current, fluxon phase difference, and current–voltage characteristic. The stack-cavity system with in-phase fluxon motion may be utilized as a THz oscillator....

  20. Instabilities in thin tunnel junctions

    International Nuclear Information System (INIS)

    Konkin, M.K.; Adler, J.G.

    1978-01-01

    Tunnel junctions prepared for inelastic electron tunneling spectroscopy are often plagued by instabilities in the 0-500-meV range. This paper relates the bias at which the instability occurs to the barrier thickness

  1. The Control of Junction Flows

    National Research Council Canada - National Science Library

    Smith, Charles

    1997-01-01

    An experimental study of the effects of spatially-limited (i.e. localized) surface suction on unsteady laminar and turbulent junction flows was performed using hydrogen bubble flow visualization and Particle Image Velocimetry (PIV...

  2. Peltier cooling in molecular junctions

    Science.gov (United States)

    Cui, Longji; Miao, Ruijiao; Wang, Kun; Thompson, Dakotah; Zotti, Linda Angela; Cuevas, Juan Carlos; Meyhofer, Edgar; Reddy, Pramod

    2018-02-01

    The study of thermoelectricity in molecular junctions is of fundamental interest for the development of various technologies including cooling (refrigeration) and heat-to-electricity conversion1-4. Recent experimental progress in probing the thermopower (Seebeck effect) of molecular junctions5-9 has enabled studies of the relationship between thermoelectricity and molecular structure10,11. However, observations of Peltier cooling in molecular junctions—a critical step for establishing molecular-based refrigeration—have remained inaccessible. Here, we report direct experimental observations of Peltier cooling in molecular junctions. By integrating conducting-probe atomic force microscopy12,13 with custom-fabricated picowatt-resolution calorimetric microdevices, we created an experimental platform that enables the unified characterization of electrical, thermoelectric and energy dissipation characteristics of molecular junctions. Using this platform, we studied gold junctions with prototypical molecules (Au-biphenyl-4,4'-dithiol-Au, Au-terphenyl-4,4''-dithiol-Au and Au-4,4'-bipyridine-Au) and revealed the relationship between heating or cooling and charge transmission characteristics. Our experimental conclusions are supported by self-energy-corrected density functional theory calculations. We expect these advances to stimulate studies of both thermal and thermoelectric transport in molecular junctions where the possibility of extraordinarily efficient energy conversion has been theoretically predicted2-4,14.

  3. Optically induced bistable states in metal/tunnel-oxide/semiconductor /MTOS/ junctions

    Science.gov (United States)

    Lai, S. K.; Dressendorfer, P. V.; Ma, T. P.; Barker, R. C.

    1981-01-01

    A new switching phenomenon in metal-oxide semiconductor tunnel junction has been discovered. With a sufficiently large negative bias applied to the electrode, incident visible light of intensity greater than about 1 microW/sq cm causes the reverse-biased junction to switch from a low-current to a high-current state. It is believed that hot-electron-induced impact ionization provides the positive feedback necessary for switching, and causes the junction to remain in its high-current state after the optical excitation is removed. The junction may be switched back to the low-current state electrically. The basic junction characteristics have been measured, and a simple model for the switching phenomenon has been developed.

  4. Entropy Flow Through Near-Critical Quantum Junctions

    Science.gov (United States)

    Friedan, Daniel

    2017-05-01

    This is the continuation of Friedan (J Stat Phys, 2017. doi: 10.1007/s10955-017-1752-8). Elementary formulas are derived for the flow of entropy through a circuit junction in a near-critical quantum circuit close to equilibrium, based on the structure of the energy-momentum tensor at the junction. The entropic admittance of a near-critical junction in a bulk-critical circuit is expressed in terms of commutators of the chiral entropy currents. The entropic admittance at low frequency, divided by the frequency, gives the change of the junction entropy with temperature—the entropic "capacitance". As an example, and as a check on the formalism, the entropic admittance is calculated explicitly for junctions in bulk-critical quantum Ising circuits (free fermions, massless in the bulk), in terms of the reflection matrix of the junction. The half-bit of information capacity per end of critical Ising wire is re-derived by integrating the entropic "capacitance" with respect to temperature, from T=0 to T=∞.

  5. Simulations of signal amplification and oscillations using a SNS junction

    International Nuclear Information System (INIS)

    Luiz, A.M.; Soares, V.; Nicolsky, R.

    1998-01-01

    A superconducting - normal metal - superconducting junction (SNS junction) may exhibit a low voltage negative differential resistance (LVNDR) effect over part of its current voltage characteristic (CVC). As the LVNDR effect is stable against a bias voltage at this CVC range, it should be possible to combine a SNS junction with conventional electronic circuits to obtain electronic devices such as mixers, amplifiers and oscillators. Making use of this remarkable effect, we show that an amplifier may be feasible by assembling a simple voltage divider made up of a SNS junction in series with a resistor. The amplifier circuit includes an adjustable DC voltage supply (the bias voltage) and an AC signal source with a given voltage. The SNS junction is connected in series with a resistor R. Choosing values of the load resistance R approximately equal to the module of the negative differential resistance (dV/dI), at the bias voltage, we may obtain large gains in this amplifier device. In order to get an oscillator, the SNS junction should be connected to a RLC tank circuit with a bias voltage adjusted in the range of the LVNDR region of its CVC. A power output of the order of one microwatt may be easily obtained. (orig.)

  6. Probing electrical transport in individual carbon nanotubes and junctions

    International Nuclear Information System (INIS)

    Kim, Tae-Hwan; Wendelken, John F; Li Anping; Du Gaohui; Li Wenzhi

    2008-01-01

    The electrical transport properties of individual carbon nanotubes (CNTs) and multi-terminal junctions of CNTs are investigated with a quadraprobe scanning tunneling microscope. The CNTs used in this study are made of stacked herringbone-type conical graphite sheets with a cone angle of ∼20 deg. to the tube axis, and the CNT junctions have no catalytic particles in the junction areas. The CNTs have a significantly higher resistivity than conventional CNTs with concentric walls. The straight CNTs display linear current-voltage (I-V) characteristics, indicating diffusive transport rather than ballistic transport. The structural deformation in CNTs with bends substantially increases the resistivity in comparison with that for the straight segments on the same CNTs, and the I-V curve departs slightly from linearity in curved segments. The junction area of the CNT junctions behaves like an ohmic-type scattering center with linear I-V characteristics. In addition, a gating effect has not been observed, in contrast to the case for conventional multi-walled CNT junctions. These unusual transport properties can be attributed to the enhanced inter-layer interaction in the herringbone-type CNTs.

  7. Spatial inhomogeneous barrier heights at graphene/semiconductor Schottky junctions

    Science.gov (United States)

    Tomer, Dushyant

    Graphene, a semimetal with linear energy dispersion, forms Schottky junction when interfaced with a semiconductor. This dissertation presents temperature dependent current-voltage and scanning tunneling microscopy/spectroscopy (STM/S) measurements performed on graphene Schottky junctions formed with both three and two dimensional semiconductors. To fabricate Schottky junctions, we transfer chemical vapor deposited monolayer graphene onto Si- and C-face SiC, Si, GaAs and MoS2 semiconducting substrates using polymer assisted chemical method. We observe three main type of intrinsic spatial inhomogeneities, graphene ripples, ridges and semiconductor steps in STM imaging that can exist at graphene/semiconductor junctions. Tunneling spectroscopy measurements reveal fluctuations in graphene Dirac point position, which is directly related to the Schottky barrier height. We find a direct correlation of Dirac point variation with the topographic undulations of graphene ripples at the graphene/SiC junction. However, no such correlation is established at graphene/Si and Graphene/GaAs junctions and Dirac point variations are attributed to surface states and trapped charges at the interface. In addition to graphene ripples and ridges, we also observe atomic scale moire patterns at graphene/MoS2 junction due to van der Waals interaction at the interface. Periodic topographic modulations due to moire pattern do not lead to local variation in graphene Dirac point, indicating that moire pattern does not contribute to fluctuations in electronic properties of the heterojunction. We perform temperature dependent current-voltage measurements to investigate the impact of topographic inhomogeneities on electrical properties of the Schottky junctions. We observe temperature dependence in junction parameters, such as Schottky barrier height and ideality factor, for all types of Schottky junctions in forward bias measurements. Standard thermionic emission theory which assumes a perfect

  8. Gräzin : Tagasi tähendab edasi / Igor Gräzin ; interv. Urmas Lauri

    Index Scriptorium Estoniae

    Gräzin, Igor, 1952-

    2004-01-01

    Europarlamenti kandideeriva Igor Gräzini arvates oleks Eestile olnud kasulik EL-i astumisega veel kaks-kolm aastat oodata. Euroopa Liit peaks tagasi minema aastasse 1957, kui ta oli vabakaubandusassotsiatsioon, see võimaldaks USA-ga konkureerida, väidab autor

  9. Symmetry breaking in SNS junctions: edge transport and field asymmetries

    Science.gov (United States)

    Suominen, Henri; Nichele, Fabrizio; Kjaergaard, Morten; Rasmussen, Asbjorn; Danon, Jeroen; Flensberg, Karsten; Levitov, Leonid; Shabani, Javad; Palmstrom, Chris; Marcus, Charles

    We study magnetic diffraction patterns in a tunable superconductor-semiconductor-superconductor junction. By utilizing epitaxial growth of aluminum on InAs/InGaAs we obtain transparent junctions which display a conventional Fraunhofer pattern of the critical current as a function of applied perpendicular magnetic field, B⊥. By studying the angular dependence of the critical current with applied magnetic fields in the plane of the junction we find a striking anisotropy. We attribute this effect to dephasing of Andreev states in the bulk of the junction, leading to SQUID like behavior when the magnetic field is applied parallel to current flow. Furthermore, in the presence of both in-plane and perpendicular fields, asymmetries in +/-B⊥ are observed. We suggest possible origins and discuss the role of spin-orbit and Zeeman physics together with a background disorder potential breaking spatial symmetries of the junction. Research supported by Microsoft Project Q, the Danish National Research Foundation and the NSF through the National Nanotechnology Infrastructure Network.

  10. A spectral measurement method for determining white OLED average junction temperatures

    Science.gov (United States)

    Zhu, Yiting; Narendran, Nadarajah

    2016-09-01

    The objective of this study was to investigate an indirect method of measuring the average junction temperature of a white organic light-emitting diode (OLED) based on temperature sensitivity differences in the radiant power emitted by individual emitter materials (i.e., "blue," "green," and "red"). The measured spectral power distributions (SPDs) of the white OLED as a function of temperature showed amplitude decrease as a function of temperature in the different spectral bands, red, green, and blue. Analyzed data showed a good linear correlation between the integrated radiance for each spectral band and the OLED panel temperature, measured at a reference point on the back surface of the panel. The integrated radiance ratio of the spectral band green compared to red, (G/R), correlates linearly with panel temperature. Assuming that the panel reference point temperature is proportional to the average junction temperature of the OLED panel, the G/R ratio can be used for estimating the average junction temperature of an OLED panel.

  11. All high T sub c edge junctions and SQUIDs

    Energy Technology Data Exchange (ETDEWEB)

    Laibowitz, R.B.; Koch, R.H.; Gupta, A.; Koren, G.; Gallagher, W.J.; Foglietti, V.; Oh, B.; Viggiano, J.M. (IBM Research Division, P.O. Box 218, Yorktown Heights, New York 10598 (US))

    1990-02-12

    We present the first observations of superconducting quantum interference in multilevel, all high {ital T}{sub {ital c}}, lithographically patterned edge junction structures. The current-voltage characteristics are nonhysteretic and have well-defined critical currents. The dynamic resistance is independent of current above the critical current. These devices show periodic sensitivity to magnetic fields and low levels of magnetic hysteresis up to temperatures around 60 K.

  12. Junction leakage measurements with micro four-point probes

    DEFF Research Database (Denmark)

    Lin, Rong; Petersen, Dirch Hjorth; Wang, Fei

    2012-01-01

    We present a new, preparation-free method for measuring the leakage current density on ultra-shallow junctions. The junction leakage is found by making a series of four-point sheet resistance measurements on blanket wafers with variable electrode spacings. The leakage current density is calculated...... using a fit of the measured four-point resistances to an analytical two-sheet model. The validity of the approximation involved in the two-sheet model is verified by a comparison to finite element model calculations....

  13. Spin-filtering junctions with double ferroelectric barriers

    International Nuclear Information System (INIS)

    Yan, Ju; Ding-Yu, Xing

    2009-01-01

    An FS/FE/NS/FE/FS double tunnel junction is suggested to have the ability to inject, modulate and detect the spin-polarized current electrically in a single device, where FS is the ferromagnetic semiconductor electrode, NS is the nonmagnetic semiconductor, and FE the ferroelectric barrier. The spin polarization of the current injected into the NS region can be switched between a highly spin-polarized state and a spin unpolarized state. The high spin polarization may be detected by measuring the tunneling magnetoresistance ratio of the double tunnel junction

  14. Gründerzeit – Od skandalu do stylu

    Directory of Open Access Journals (Sweden)

    Jacek K. Knothe

    2017-12-01

    Full Text Available Przyjmuje się, iż architektura ‘okresu założycieli’ – ‘Grűnderzeit’ występowała w Niemczech w latach 1870-1920, to jest dłużej niż do zakończenia I wojny światowej stanowiącej swoistą cezurę XX wieku. Na terenie Polski, w miarę rozprzestrzeniania się przychodzącego z Europy postępu technicznego, styl Grűnderzeit następował pod koniec XIX wieku z niewielkim tylko opóźnieniem w stosunku do Niemiec, a wraz z nim jeszcze 12 stylów okresu historyzmu. Budynki z okresu Grűnderzeit, powszechnie obecne w centrach polskich miast pomimo zniszczeń spowodowanych II wojną, stanowią zwykle obiekty najstarsze i choćby z tego powodu uznawane są za estetyczny kanon historycznej zabudowy mieszkaniowej. Zamiarem autora jest przywrócenie do literatury polskiej terminu Grűnderzeit jako bardziej precyzyjnie określającego styl niż termin ‘historyzm’, używany do opisania praktycznie każdej formy architektonicznej z okresu poprzedzającego modernizm. Autorowi chodzi też o spowodowanie w polskiej literaturze dekonstrukcji terminu ‘historyzm’ i wyodrębnienie z niego terminu Grűnderzeit, ponadto o rozprawienie się z funkcjonującymi na temat stylu Grűnderzeit uprzedzeniami oraz o wykazanie związków i wpływu tego stylu na architekturę tkanki miejskiej większości polskich miast, nie tylko tych położonych na zachód od Wisły. Bezrefleksyjność lub też pogląd, iż architektura z przełomu XIX i XX wieku na terenie Polski nie miała korzeni w XIX wiecznej architekturze Europy, a jeśli nawet miała, to na pewno nie były one niemieckie, w erze globalizmu która właśnie wtedy się rozpoczynała, nie wytrzymuje próby.

  15. High quality factor HTS Josephson junctions on low loss substrates

    Energy Technology Data Exchange (ETDEWEB)

    Stornaiuolo, D; Longobardi, L; Massarotti, D; Barone, A; Tafuri, F [CNR-SPIN Napoli, Complesso Universitario di Monte Sant' Angelo, via Cinthia, 80126 Napoli (Italy); Papari, G; Carillo, F [NEST, CNR-NANO and Scuola Normale Superiore, Piazza San Silvestro 12, 56127 Pisa (Italy); Cennamo, N [Dipartimento Ingegneria dell' Informazione, Seconda Universita degli Studi di Napoli, via Roma 29, 81031 Aversa (Italy)

    2011-04-15

    We have extended the off-axis biepitaxial technique to produce YBCO grain boundary junctions on low loss substrates. Excellent transport properties have been reproducibly found, with remarkable values of the quality factor I{sub c}R{sub n} (with I{sub c} the critical current and R{sub n} the normal state resistance) above 10 mV, far higher than the values commonly reported in the literature for high temperature superconductor (HTS) based Josephson junctions. The outcomes are consistent with a picture of a more uniform grain boundary region along the current path. This work supports a possible implementation of grain boundary junctions for various applications including terahertz sensors and HTS quantum circuits in the presence of microwaves.

  16. Optical photon detection in Al superconducting tunnel junctions

    International Nuclear Information System (INIS)

    Brammertz, G.; Peacock, A.; Verhoeve, P.; Martin, D.; Venn, R.

    2004-01-01

    We report on the successful fabrication of low leakage aluminium superconducting tunnel junctions with very homogeneous and transparent insulating barriers. The junctions were tested in an adiabatic demagnetisation refrigerator with a base temperature of 35 mK. The normal resistance of the junctions is equal to ∼7 μΩ cm 2 with leakage currents in the bias voltage domain as low as 100 fA/μm 2 . Optical single photon counting experiments show a very high responsivity with charge amplification factors in excess of 100. The total resolving power λ/Δλ (including electronic noise) for 500 nm photons is equal to 13 compared to a theoretical tunnel limited value of 34. The current devices are found to be limited spectroscopically by spatial inhomogeneities in the detectors response

  17. Supercurrent and multiple Andreev reflections in micrometer-long ballistic graphene Josephson junctions.

    Science.gov (United States)

    Zhu, Mengjian; Ben Shalom, Moshe; Mishchsenko, Artem; Fal'ko, Vladimir; Novoselov, Kostya; Geim, Andre

    2018-02-08

    Ballistic Josephson junctions are predicted to support a number of exotic physics processess, providing an ideal system to inject the supercurrent in the quantum Hall regime. Herein, we demonstrate electrical transport measurements on ballistic superconductor-graphene-superconductor junctions by contacting graphene to niobium with a junction length up to 1.5 μm. Hexagonal boron nitride encapsulation and one-dimensional edge contacts guarantee high-quality graphene Josephson junctions with a mean free path of several micrometers and record-low contact resistance. Transports in normal states including the observation of Fabry-Pérot oscillations and Sharvin resistance conclusively witness the ballistic propagation in the junctions. The critical current density J C is over one order of magnitude larger than that of the previously reported junctions. Away from the charge neutrality point, the I C R N product (I C is the critical current and R N the normal state resistance of junction) is nearly a constant, independent of carrier density n, which agrees well with the theory for ballistic Josephson junctions. Multiple Andreev reflections up to the third order are observed for the first time by measuring the differential resistance in the micrometer-long ballistic graphene Josephson junctions.

  18. Macroscopic Quantum Tunneling in Superconducting Junctions of β-Ag2Se Topological Insulator Nanowire.

    Science.gov (United States)

    Kim, Jihwan; Kim, Bum-Kyu; Kim, Hong-Seok; Hwang, Ahreum; Kim, Bongsoo; Doh, Yong-Joo

    2017-11-08

    We report on the fabrication and electrical transport properties of superconducting junctions made of β-Ag 2 Se topological insulator (TI) nanowires in contact with Al superconducting electrodes. The temperature dependence of the critical current indicates that the superconducting junction belongs to a short and diffusive junction regime. As a characteristic feature of the narrow junction, the critical current decreases monotonously with increasing magnetic field. The stochastic distribution of the switching current exhibits the macroscopic quantum tunneling behavior, which is robust up to T = 0.8 K. Our observations indicate that the TI nanowire-based Josephson junctions can be a promising building block for the development of nanohybrid superconducting quantum bits.

  19. Modelling of current-voltage characteristics of infrared photo-detectors based on type – II InAs/GaSb super-lattice diodes with unipolar blocking layers

    Directory of Open Access Journals (Sweden)

    Vishnu Gopal

    2015-09-01

    Full Text Available It is shown that current-voltage characteristics of infrared photo-detectors based on type-II InAs/GaSb super-lattices with uni-polar blocking layers can be modelled similar to a junction diode with a finite series resistance on account of blocking barriers. As an example this paper presents the results of a study of current-voltage characteristics of a type II InAs/GaSb super-lattice diode with PbIbN architecture using a recently proposed [J. Appl. Phys. 116, 084502 (2014] method for modelling of illuminated photovoltaic detectors. The thermal diffusion, generation – recombination (g-r, and ohmic currents are found as principal components besides a component of photocurrent due to background illumination. The experimentally observed reverse bias diode current in excess of thermal current (diffusion + g-r, photo-current and ohmic shunt current is reported to be best described by an exponential function of the type, Iexcess = Ir0 + K1exp(K2 V, where Ir0, K1 and K2 are fitting parameters and V is the applied bias voltage. The present investigations suggest that the exponential growth of excess current with the applied bias voltage may be taking place along the localized regions in the diode. These localized regions are the shunt resistance paths on account of the surface leakage currents and/or defects and dislocations in the base of the diode.

  20. Den græske by i Afghanistan

    DEFF Research Database (Denmark)

    Hannestad, Lise

    2016-01-01

    Byen Ai Khanoum som blev udgravet i i 1960'erne i det nordøstlige Afghanistan blev grundlagt som følge af Alexander den Stores erobring af hele Nærorienten og frem til det nordlige Indien. Fundene viser en spændende blanding af græsk og nræorientalsk kultur......Byen Ai Khanoum som blev udgravet i i 1960'erne i det nordøstlige Afghanistan blev grundlagt som følge af Alexander den Stores erobring af hele Nærorienten og frem til det nordlige Indien. Fundene viser en spændende blanding af græsk og nræorientalsk kultur...

  1. Hjemløshed i Grønland

    DEFF Research Database (Denmark)

    Hansen, Knud Erik; Andersen, Hans Thor

    Rapporten giver en beskrivelse af karakteren af hjemløsheden i Grønland. Den beskriver forholdene for tre måder at være ude i hjemløshed på i Grønland, hvordan husstande når dertil og hvilke muligheder de har for at komme ud af hjemløsheden. I rapporten indgår beskrivelser af en række personers liv...... households get homeless and their options to get out of homelessness. The report contains descriptions of how a number of people live in homelessness. The three types are: Homeless with no fixed accommodation, resettled living in resettlement housing and homeless who are long-time living with family, friends...

  2. GR712RC- Dual-Core Processor- Product Status

    Science.gov (United States)

    Sturesson, Fredrik; Habinc, Sandi; Gaisler, Jiri

    2012-08-01

    The GR712RC System-on-Chip (SoC) is a dual core LEON3FT system suitable for advanced high reliability space avionics. Fault tolerance features from Aeroflex Gaisler’s GRLIB IP library and an implementation using Ramon Chips RadSafe cell library enables superior radiation hardness.The GR712RC device has been designed to provide high processing power by including two LEON3FT 32- bit SPARC V8 processors, each with its own high- performance IEEE754 compliant floating-point-unit and SPARC reference memory management unit.This high processing power is combined with a large number of serial interfaces, ranging from high-speed links for data transfers to low-speed control buses for commanding and status acquisition.

  3. P-N semiconductor junctions used as X-ray detectors

    International Nuclear Information System (INIS)

    Pela, C.A.; Bruco, J.L.; Navas, E.A.; Paula, E. de; Guilardi Neto, T.

    1987-01-01

    The current response of some comercial P-N semiconductor junctions in function of X-ray incidency, in 40 to 140 KVp band used in diagnosis was characterized. Some junctions were also exposed to radiation of 80 to 250 KVp used in therapy. (C.G.C.) [pt

  4. Comparison of the magneto-Peltier and magneto-Seebeck effects in magnetic tunnel junctions

    NARCIS (Netherlands)

    Shan, J.; Dejene, F. K.; Leutenantsmeyer, J. C.; Flipse, J.; Munzenberg, M.; van Wees, B. J.

    2015-01-01

    Understanding heat generation and transport processes in a magnetic tunnel junction (MTJ) is a significant step towards improving its application in current memory devices. Recent work has experimentally demonstrated the magneto-Seebeck effect in MTJs, where the Seebeck coefficient of the junction

  5. Bifurcation and chaos in a dc-driven long annular Josephson junction

    DEFF Research Database (Denmark)

    Grnbech-Jensen, N.; Lomdahl, Peter S.; Samuelsen, Mogens Rugholm

    1991-01-01

    Simulations of long annular Josephson junctions in a static magnetic field show that in large regions of bias current the system can exhibit a period-doubling bifurcation route to chaos. This is in contrast to previously studied Josephson-junction systems where chaotic behavior has primarily been...

  6. Temperature dependence of the cosphi conductance in Josephson tunnel junctions determined from plasma resonance experiments

    DEFF Research Database (Denmark)

    Pedersen, Niels Falsig; Sørensen, O. H.; Mygind, Jesper

    1978-01-01

    The microwave response at 9 GHz of Sn-O-Sn tunnel-junction current biased at zero dc voltage has been measured just below the critical temperature Tc of the Sn films. The temperature dependence of the cosφ conductance is determined from the resonant response at the junction plasma frequency fp...

  7. Direct detection of the parametrically generated half-harmonic voltage in a Josephson tunnel junction

    DEFF Research Database (Denmark)

    Mygind, Jesper; Pedersen, Niels Falsig; Sørensen, O. H.

    1976-01-01

    The first direct observation of the parametrically generated half-harmonic voltage in a Josephson tunnel junction is reported. A microwave signal at f=17.25 GHz is applied to the junction dc current biased at zero voltage such that the Josephson plasma resonance fp=f/2. Under these conditions...

  8. Entsorgungswirtschaft zwischen Grünem Punkt und Dosenpfand

    OpenAIRE

    Johann Wackerbauer

    2003-01-01

    Die Zeiten der hohen Wachstumsraten in der Abfallentsorgung dürften vorbei sein. Die Nachfrage nach Entsorgungsleistungen wird stärker von der Umweltpolitik als von der allgemeinen Konjunkturentwicklung beeinflusst. Die Turbulenzen im Zusammenhang mit der Einführung der Pfandpflicht auf Einweggetränkeverpackungen und die Diskussion um die Monopolstellung der Gesellschaft »Der Grüne Punkt - Duales System Deutschland AG« im Bereich der Entsorgung von Verkaufsverpackungen haben die Entsorgungs...

  9. Minimal canonical comprehensive Gröbner systems

    OpenAIRE

    Manubens, Montserrat; Montes, Antonio

    2009-01-01

    This is the continuation of Montes' paper "On the canonical discussion of polynomial systems with parameters''. In this paper, we define the Minimal Canonical Comprehensive Gröbner System of a parametric ideal and fix under which hypothesis it exists and is computable. An algorithm to obtain a canonical description of the segments of the Minimal Canonical CGS is given, thus completing the whole MCCGS algorithm (implemented in Maple and Singular). We show its high utility for applications, suc...

  10.  Gadeplansarbejdets grænseposition - muligheder og dilemmaer

    DEFF Research Database (Denmark)

    Mørck, Line Lerche

    2010-01-01

    Artiklen giver et bud på, hvordan vi gennem grænsefællesskaber på tværs af etniske og sociale skel kan bevæge det etablerede samfund og de unge, så de unge kommer 'indenfor rækkevidde'. Der diskuteres muligheder og dilemmaer i et gadeplansarbejde, der mødes med forventninger om at skulle samarbej...

  11. Grüneisen parameter for gases and superfluid helium

    International Nuclear Information System (INIS)

    De Souza, Mariano; Menegasso, Paulo; Paupitz, Ricardo; Seridonio, Antonio; Lagos, Roberto E

    2016-01-01

    The Grüneisen ratio (Γ), i.e. the ratio of the thermal expansivity to the specific heat at constant pressure, quantifies the degree of anharmonicity of the potential governing the physical properties of a system. While Γ has been intensively explored in solid state physics, very little is known about its behavior for gases. This is most likely due to the difficulties posed in carrying out both thermal expansion and specific heat measurements in gases with high accuracy as a function of pressure and temperature. Furthermore, to the best of our knowledge a comprehensive discussion about the peculiarities of the Grüneisen ratio is still lacking in the literature. Here we report on a detailed and comprehensive overview of the Grüneisen ratio. Particular emphasis is placed on the analysis of Γ for gases. The main findings of this work are: (i) for the van der Waals gas Γ depends only on the co-volume b due to interaction effects, it is smaller than that for the ideal gas (Γ = 2/3) and diverges upon approaching the critical volume; (ii) for the Bose–Einstein condensation of an ideal boson gas, assuming the transition as first-order, Γ diverges upon approaching a critical volume, similarly to the van der Waals gas; (iii) for 4 He at the superfluid transition Γ shows a singular behavior. Our results reveal that Γ can be used as an appropriate experimental tool to explore pressure-induced critical points. (paper)

  12. Minedrift og miljø i Grønland

    DEFF Research Database (Denmark)

    Johansen, P.; Asmund, G.; Glahder, C. M.

    zink, som er frigjort fra de mineraler, som er brudt og oparbejdet. Forureningen kommer især fra tailings fra de anlæg, hvor indholdet af værdifulde mineraler i malmen er blevet adskilt og opkoncentreret. En anden vigtig forureningskilde har været såkaldt gråbjerg, dvs. brudt materiale, hvor......, at spe cielt bly ophober sig i høje koncentrationer i muslinger i tidevandszonen. Men der er også eksempler på, at fisk og rejer samt tangplanter får forhøjede blyværdier. Forstyrrelser I Grønland vil aktiviteter i forbindelse med minedrift og efterforskning af mine ra ler i mange tilfælde resultere i...... for eksempel sikre, at tailings og gråbjerg bliver deponeret på en måde, så frigørelse af metaller bliver væsentligt begrænset og ikke resulterer i, at forurenende stoffer bliver spredt over større områder. Der bliver også allerede ved godkendelsen af et mineprojekt udarbejdet en plan for, hvordan området skal...

  13. Microstructure of Josephson junctions: Effect on supercurrent transport in YBCO grain boundary and barrier layer junctions

    International Nuclear Information System (INIS)

    Merkle, K.L.; Huang, Y.

    1998-01-01

    The electric transport of high-temperature superconductors, such as YBa 2 Cu 3 O 7-x (YBCO), can be strongly restricted by the presence of high-angle grain boundaries (GB). This weak-link behavior is governed by the macroscopic GB geometry and the microscopic grain boundary structure and composition at the atomic level. Whereas grain boundaries present a considerable impediment to high current applications of high T c materials, there is considerable commercial interest in exploiting the weak-link-nature of grain boundaries for the design of microelectronic devices, such as superconducting quantum interference devices (SQUIDs). The Josephson junctions which form the basis of this technology can also be formed by introducing artificial barriers into the superconductor. The authors have examined both types of Josephson junctions by EM techniques in an effort to understand the connection between microstructure/chemistry and electrical transport properties. This knowledge is a valuable resource for the design and production of improved devices

  14. Rebound Attacks on the Reduced Grøstl Hash Function

    DEFF Research Database (Denmark)

    Mendel, Florian; Rechberger, C.; Schlaffer, Martin

    2010-01-01

    Grøstl is one of 14 second round candidates of the NIST SHA-3 competition. Cryptanalytic results on the wide-pipe compression function of Grøstl-256 have already been published. However, little is known about the hash function, arguably a much more interesting cryptanalytic setting. Also, Grøstl...

  15. Operating modes of superconducting tunnel junction device

    Energy Technology Data Exchange (ETDEWEB)

    Maehata, Keisuke [Kyushu Univ., Fukuoka (Japan). Faculty of Engineering

    1998-07-01

    In the Electrotechnical Laboratory, an Nb type superconducting tunnel junction (STJ) device with 200 x 200 sq. micron in area and super high quality was manufactured. By using 55-fe source, response of this large area STJ to X-ray was measured. In this measurement, two action modes with different output wave height from front amplifier were observed. Then, in this study, current-voltage feature of the element in each action mode was analyzed to elucidate a mechanism to form such two action modes. The feature was analyzed by using first order approximate solution on cavity resonance mode of Sine-Gordon equation. From the analytical results, it could be supposed that direction and magnitude of effective magnetic field penetrating into jointed area changed by an induction current effect owing to impressing speed of the magnetic field, which brings two different current-voltage features to make possible to observe two action modes with different pulse wave height. (G.K.)

  16. Transport properties of molecular junctions

    CERN Document Server

    Zimbovskaya, Natalya A

    2013-01-01

    A comprehensive overview of the physical mechanisms that control electron transport and the characteristics of metal-molecule-metal (MMM) junctions is presented. As far as possible, methods and formalisms presented elsewhere to analyze electron transport through molecules are avoided. This title introduces basic concepts—a description of the electron transport through molecular junctions—and briefly describes relevant experimental methods. Theoretical methods commonly used to analyze the electron transport through molecules are presented. Various effects that manifest in the electron transport through MMMs, as well as the basics of density-functional theory and its applications to electronic structure calculations in molecules are presented. Nanoelectronic applications of molecular junctions and similar systems are discussed as well. Molecular electronics is a diverse and rapidly growing field. Transport Properties of Molecular Junctions presents an up-to-date survey of the field suitable for researchers ...

  17. NbN tunnel junctions

    International Nuclear Information System (INIS)

    Villegier, J.C.; Vieux-Rochaz, L.; Goniche, M.; Renard, P.; Vabre, M.

    1984-09-01

    All-niobium nitride Josephon junctions have been prepared successfully using a new processing called SNOP: Selective Niobium (nitride) Overlap Process. Such a process involves the ''trilayer'' deposition on the whole wafer before selective patterning of the electrodes by optically controlled dry reactive ion etching. Only two photomask levels are need to define an ''overlap'' or a ''cross-type'' junction with a good accuracy. The properties of the niobium nitride films deposited by DC-magnetron sputtering and the surface oxide growth are analysed. The most critical point to obtain high quality and high gap value junctions resides in the early stage of the NbN counterelectrode growth. Some possibilities to overcome such a handicap exist even if the fabrication needs substrate temperatures below 250 0 C

  18. Gravitation at the Josephson Junction

    Directory of Open Access Journals (Sweden)

    Victor Atanasov

    2018-01-01

    Full Text Available A geometric potential from the kinetic term of a constrained to a curved hyperplane of space-time quantum superconducting condensate is derived. An energy conservation relation involving the geometric field at every material point in the superconductor is demonstrated. At a Josephson junction the energy conservation relation implies the possibility of transforming electric energy into geometric field energy, that is, curvature of space-time. Experimental procedures to verify that the Josephson junction can act as a voltage-to-curvature converter are discussed.

  19. Personage Column:Prof. Dr.Adolf Grünert%人物专栏:Adolf Grünert

    Institute of Scientific and Technical Information of China (English)

    2005-01-01

    @@ Adolf Grünert was born in 1938 in Neuleiningen, a lovely western village of Germany in Palatinate (Pfalz).The first seven years of his life were overshadowed by the war as he was living in the war region of western front.Despite of this, his childhood was deeply influenced by the outstanding care and shelter of his parents and the family-life.

  20. Modeling Bloch oscillations in nanoscale Josephson junctions

    Science.gov (United States)

    Vora, Heli; Kautz, R. L.; Nam, S. W.; Aumentado, J.

    2018-01-01

    Bloch oscillations in nanoscale Josephson junctions with a Coulomb charging energy comparable to the Josephson coupling energy are explored within the context of a model previously considered by Geigenmüller and Schön that includes Zener tunneling and treats quasiparticle tunneling as an explicit shot-noise process. The dynamics of the junction quasicharge are investigated numerically using both Monte Carlo and ensemble approaches to calculate voltage-current characteristics in the presence of microwaves. We examine in detail the origin of harmonic and subharmonic Bloch steps at dc biases I = (n/m)2ef induced by microwaves of frequency f and consider the optimum parameters for the observation of harmonic (m = 1) steps. We also demonstrate that the GS model allows a detailed semiquantitative fit to experimental voltage-current characteristics previously obtained at the Chalmers University of Technology, confirming and strengthening the interpretation of the observed microwave-induced steps in terms of Bloch oscillations. PMID:29577106

  1. Charge Transport Processes in Molecular Junctions

    Science.gov (United States)

    Smith, Christopher Eugene

    Molecular electronics (ME) has evolved into a rich area of exploration that combines the fields of chemistry, materials, electronic engineering and computational modeling to explore the physics behind electronic conduction at the molecular level. Through studying charge transport properties of single molecules and nanoscale molecular materials the field has gained the potential to bring about new avenues for the miniaturization of electrical components where quantum phenomena are utilized to achieve solid state molecular device functionality. Molecular junctions are platforms that enable these studies and consist of a single molecule or a small group of molecules directly connected to electrodes. The work presented in this thesis has built upon the current understanding of the mechanisms of charge transport in ordered junctions using self-assembled monolayer (SAM) molecular thin films. Donor and acceptor compounds were synthesized and incorporated into SAMs grown on metal substrates then the transport properties were measured with conducting probe atomic force microscopy (CP-AFM). In addition to experimentally measured current-voltage (I-V) curves, the transport properties were addressed computationally and modeled theoretically. The key objectives of this project were to 1) investigate the impact of molecular structure on hole and electron charge transport, 2) understand the nature of the charge carriers and their structure-transport properties through long (chemically gated to modulate the transport. These results help advance our understanding of transport behavior in semiconducting molecular thin films, and open opportunities to engineer improved electronic functionality into molecular devices.

  2. Quantifying transition voltage spectroscopy of molecular junctions: Ab initio calculations

    DEFF Research Database (Denmark)

    Chen, Jingzhe; Markussen, Troels; Thygesen, Kristian Sommer

    2010-01-01

    Transition voltage spectroscopy (TVS) has recently been introduced as a spectroscopic tool for molecular junctions where it offers the possibility to probe molecular level energies at relatively low bias voltages. In this work we perform extensive ab initio calculations of the nonlinear current...

  3. Negative differential resistance in Josephson junctions coupled to a cavity

    DEFF Research Database (Denmark)

    Pedersen, Niels Falsig; Filatrella, G.; Pierro, V.

    2014-01-01

    or external – is often used. A cavity may also induce a negative differential resistance region at the lower side of the resonance frequency. We investigate the dynamics of Josephson junctions with a negative differential resistance in the quasi particle tunnel current, i.e. in the McCumber curve. We find...

  4. Switching between dynamic states in intermediate-length Josephson junctions

    DEFF Research Database (Denmark)

    Pagano, S.; Sørensen, Mads Peter; Parmentier, R. D.

    1986-01-01

    The appearance of zero-field steps (ZFS’s) in the current-voltage characteristics of intermediate-length overlap-geometry Josephson tunnel junctions described by a perturbed sine-Gordon equation (PSGE) is associated with the growth of parametrically excited instabilities of the McCumber backgroun...

  5. Josephson tunnel junctions in a magnetic field gradient

    DEFF Research Database (Denmark)

    Monaco, R.; Mygind, Jesper; Koshelets, V.P.

    2011-01-01

    We measured the magnetic field dependence of the critical current of high-quality Nb-based planar Josephson tunnel junctions in the presence of a controllable nonuniform field distribution. We found skewed and slowly changing magnetic diffraction patterns quite dissimilar from the Fraunhofer...

  6. The Drosophila Gr28bD product is a non-specific cation channel that can be used as a novel thermogenetic tool.

    Science.gov (United States)

    Mishra, Aditi; Salari, Autoosa; Berigan, Benton R; Miguel, Kayla C; Amirshenava, Marzie; Robinson, Abbey; Zars, Benjamin C; Lin, Jenna L; Milescu, Lorin S; Milescu, Mirela; Zars, Troy

    2018-01-17

    Extrinsic control of single neurons and neuronal populations is a powerful approach for understanding how neural circuits function. Adding new thermogenetic tools to existing optogenetic and other forms of intervention will increase the complexity of questions that can be addressed. A good candidate for developing new thermogenetic tools is the Drosophila gustatory receptor family, which has been implicated in high-temperature avoidance behavior. We examined the five members of the Gr28b gene cluster for temperature-dependent properties via three approaches: biophysical characterization in Xenopus oocytes, functional calcium imaging in Drosophila motor neurons, and behavioral assays in adult Drosophila. Our results show that Gr28bD expression in Xenopus oocytes produces a non-specific cationic current that is activated by elevated temperatures. This current is non-inactivating and non-voltage dependent. When expressed in Drosophila motor neurons, Gr28bD can be used to change the firing pattern of individual cells in a temperature-dependent fashion. Finally, we show that pan-neuronal or motor neuron expression of Gr28bD can be used to alter fruit fly behavior with elevated temperatures. Together, these results validate the potential of the Gr28bD gene as a founding member of a new class of thermogenetic tools.

  7. Niobium nitride Josephson junctions with silicon and germanium barriers

    International Nuclear Information System (INIS)

    Cukauskas, E.J.; Carter, W.L.

    1988-01-01

    Niobium nitride based junctions with silicon, germanium, and composite silicon/germanium barriers were fabricated and characterized for several barrier compositions. The current-voltage characteristics were analyzed at several temperatures using the Simmons model and numerical integration of the WKB approximation for the average barrier height and effective thickness. The zero voltage conductance was measured from 1.5 K to 300 K and compared to the Mott hopping conductivity model and the Stratton tunneling temperature dependence. Conductivity followed Mott conductivity at temperatures above 60 K for junctions with less than 100 angstrom thick barriers

  8. Phase transition in a modified square Josephson-junction array

    CERN Document Server

    Han, J

    1999-01-01

    We study the phase transition in a modified square proximity-coupled Josephson-junction array with small superconducting islands at the center of each plaquette. We find that the modified square array undergoes a Kosterlitz-Thouless-Berezinskii-like phase transition, but at a lower temperature than the simple square array with the same single-junction critical current. The IV characteristics, as well as the phase transition, resemble qualitatively those of a disordered simple square array. The effects of the presence of the center islands in the modified square array are discussed.

  9. Quantum spin circulator in Y junctions of Heisenberg chains

    Science.gov (United States)

    Buccheri, Francesco; Egger, Reinhold; Pereira, Rodrigo G.; Ramos, Flávia B.

    2018-06-01

    We show that a quantum spin circulator, a nonreciprocal device that routes spin currents without any charge transport, can be achieved in Y junctions of identical spin-1 /2 Heisenberg chains coupled by a chiral three-spin interaction. Using bosonization, boundary conformal field theory, and density matrix renormalization group simulations, we find that a chiral fixed point with maximally asymmetric spin conductance arises at a critical point separating a regime of disconnected chains from a spin-only version of the three-channel Kondo effect. We argue that networks of spin-chain Y junctions provide a controllable approach to construct long-sought chiral spin-liquid phases.

  10. Long Josephson tunnel junctions with doubly connected electrodes

    DEFF Research Database (Denmark)

    Monaco, R.; Mygind, J.; Koshelets, V. P.

    2012-01-01

    of such experiments, the number of magnetic flux quanta spontaneously trapped in a superconducting loop was measured by means of a long Josephson tunnel junction built on top of the loop itself. We have analyzed this system and found a number of interesting features not occurring in the conventional case with simply...... connected electrodes. In particular, the fluxoid quantization results in a frustration of the Josephson phase, which, in turn, reduces the junction critical current. Further, the possible stable states of the system are obtained by a self-consistent application of the principle of minimum energy...

  11. Spin nutation effects in molecular nanomagnet–superconductor tunnel junctions

    International Nuclear Information System (INIS)

    Abouie, J; Abdollahipour, B; Rostami, A A

    2013-01-01

    We study the spin nutation effects of a molecular nanomagnet on the Josephson current through a superconductor|molecular nanomagnet|superconductor tunnel junction. We explicitly demonstrate that, due to the spin nutation of the molecular nanomagnet, two oscillatory terms emerge in the ac Josephson current in addition to the conventional ac Josephson current. Some resonances occur in the junction due to the interactions of the transported quasiparticles with the bias voltage and molecular nanomagnet spin dynamics. Their appearance indicates that the energy exchanged during these interactions is in the range of the superconducting energy gap. We also show that the spin nutation is able to convert the ac Josephson current to a dc current, which is interesting for applications. (paper)

  12. Nanometer-scale patterning of high-Tc superconductors for Josephson junction-based digital circuits

    International Nuclear Information System (INIS)

    Wendt, J.R.; Plut, T.A.; Corless, R.F.; Martens, J.S.; Berkowitz, S.; Char, K.; Johansson, M.; Hou, S.Y.; Phillips, J.M.

    1994-01-01

    A straightforward method for nanometer-scale patterning of high-T c superconductor thin films is discussed. The technique combines direct-write electron beam lithography with well-controlled aqueous etches and is applied to the fabrication of Josephson junction nanobridges in high-quality, epitaxial thin-film YBa 2 Cu 3 O 7 . We present the results of our studies of the dimensions, yield, uniformity, and mechanism of the junctions along with the performance of a representative digital circuit based on these junctions. Direct current junction parameter statistics measured at 77 K show critical currents of 27.5 μA±13% for a sample set of 220 junctions. The Josephson behavior of the nanobridge is believed to arise from the aggregation of oxygen vacancies in the nanometer-scale bridge

  13. GR 290 (ROMANO’S STAR). II. LIGHT HISTORY AND EVOLUTIONARY STATE

    Energy Technology Data Exchange (ETDEWEB)

    Polcaro, V. F.; Nesci, R.; Chieffi, A.; Viotti, R. F. [INAF-IAPS, Via del Fosso del Cavaliere, 100, I-00133 Roma (Italy); Maryeva, O. [Special Astrophysical Observatory of the Russian Academy of Science, Nizhnii Arkhyz, 369167 (Russian Federation); Calabresi, M.; Haver, R. [ARA, Via Carlo Emanuele I, 12A, I-00185 Roma (Italy); Galleti, S.; Gualandi, R. [INAF—Osservatorio Astronomico di Bologna, Via Ranzani 1, I-40127 Bologna (Italy); Mills, O. F.; Osborn, W. H. [Yerkes Observatory, 373 W. Geneva Street, Williams Bay, WI 53115 (United States); Pasquali, A. [Astronomisches Rechen-Institut, Zentrum für Astronomie, Universität Heidelberg, Mönchhofstrasse 12-14, D-69120 Heidelberg (Germany); Rossi, C. [Università La Sapienza, Pza A.Moro 5, I-00185 Roma (Italy); Vasilyeva, T., E-mail: vitofrancesco.polcaro@iaps.inaf.it [Pulkovo Astronomical Observatory, 196140, Saint-Petersburg, Pulkovskoye chaussee 65/1 (Russian Federation)

    2016-06-01

    variations. Presently, GR 290 falls in the H–R diagram close to WN8h stars and is probably younger than them. In the light of current evolutionary models of very massive stars, we find that GR 290 has evolved from an ∼60 M {sub ☉} progenitor star and should have an age of about four million years. From its physical charcteristics, we argue that GR 290 has left the LBV stage and is presently moving from the LBV stage to a Wolf–Rayet stage of a late nitrogen spectral type.

  14. GR 290 (ROMANO’S STAR). II. LIGHT HISTORY AND EVOLUTIONARY STATE

    International Nuclear Information System (INIS)

    Polcaro, V. F.; Nesci, R.; Chieffi, A.; Viotti, R. F.; Maryeva, O.; Calabresi, M.; Haver, R.; Galleti, S.; Gualandi, R.; Mills, O. F.; Osborn, W. H.; Pasquali, A.; Rossi, C.; Vasilyeva, T.

    2016-01-01

    , GR 290 falls in the H–R diagram close to WN8h stars and is probably younger than them. In the light of current evolutionary models of very massive stars, we find that GR 290 has evolved from an ∼60 M ☉ progenitor star and should have an age of about four million years. From its physical charcteristics, we argue that GR 290 has left the LBV stage and is presently moving from the LBV stage to a Wolf–Rayet stage of a late nitrogen spectral type.

  15. Electronic noise of superconducting tunnel junction detectors

    International Nuclear Information System (INIS)

    Jochum, J.; Kraus, H.; Gutsche, M.; Kemmather, B.; Feilitzsch, F. v.; Moessbauer, R.L.

    1994-01-01

    The optimal signal to noise ratio for detectors based on superconducting tunnel junctions is calculated and compared for the cases of a detector consisting of one single tunnel junction, as well as of series and of parallel connections of such tunnel junctions. The influence of 1 / f noise and its dependence on the dynamical resistance of tunnel junctions is discussed quantitatively. A single tunnel junction yields the minimum equivalent noise charge. Such a tunnel junction exhibits the best signal to noise ratio if the signal charge is independent of detector size. In case, signal charge increases with detector size, a parallel or a series connection of tunnel junctions would provide the optimum signal to noise ratio. The equivalent noise charge and the respective signal to noise ratio are deduced as functions of tunnel junction parameters such as tunneling time, quasiparticle lifetime, etc. (orig.)

  16. Junction structures based on the high-Tc superconductor YBa2Cu3O7-δ

    International Nuclear Information System (INIS)

    Gijs, M.A.M.

    1993-01-01

    An overview is given of the investigations of the Josephson effect in junction structures based on the high-T c superconductor YBa 2 Cu 3 O 7-δ , which were carried out at the Philips Research Laboratories in Eindhoven in the 1988-1990 period. The reported results are presented in their international scientific context, without attempting a complete review of the subject. However, the various junction types studied give a good idea of the scientific pursuits of high-T c junction researchers in this period. The following junctions are considered: in the category of 'weak link'-type junctions we have investigated YBa 2 Cu 3 O 7-δ -Ag-Nb point contact junctions, YBa 2 Cu 3 O 7-δ Dayem bridges and YBa 2 Cu 3 O 7-δ -Ag(-Al)-Pb proximity junctions. In these structures we combine a high-T c with a low-T c superconductor. We also fabricated planar 'all high-T c ' YBa 2 Cu 3 O 7-δ -Ag-YBa 2 Cu 3 O 7-δ junctions using a submicron structuring process. Next we have made tunnel junctions to study density of states effects of the high-T c superconductor : YBa 2 Cu 3 O 7-δ -Pb junctions using the degraded YBa 2 Cu 3 O 7-δ -Pb interface as a tunnel barrier, and YBa 2 Cu 3 O 7-δ -Ag-Al/Al 2 O 3 /Pb tunnel junctions based on the superconducting proximity effect. Our junction structures are electrically characterized and mostly studied in microwave and magnetic fields. Results are compared with current theoretical models. (orig.)

  17. Charge splitters and charge transport junctions based on guanine quadruplexes

    Science.gov (United States)

    Sha, Ruojie; Xiang, Limin; Liu, Chaoren; Balaeff, Alexander; Zhang, Yuqi; Zhang, Peng; Li, Yueqi; Beratan, David N.; Tao, Nongjian; Seeman, Nadrian C.

    2018-04-01

    Self-assembling circuit elements, such as current splitters or combiners at the molecular scale, require the design of building blocks with three or more terminals. A promising material for such building blocks is DNA, wherein multiple strands can self-assemble into multi-ended junctions, and nucleobase stacks can transport charge over long distances. However, nucleobase stacking is often disrupted at junction points, hindering electric charge transport between the two terminals of the junction. Here, we show that a guanine-quadruplex (G4) motif can be used as a connector element for a multi-ended DNA junction. By attaching specific terminal groups to the motif, we demonstrate that charges can enter the structure from one terminal at one end of a three-way G4 motif, and can exit from one of two terminals at the other end with minimal carrier transport attenuation. Moreover, we study four-way G4 junction structures by performing theoretical calculations to assist in the design and optimization of these connectors.

  18. Q factor and resonance amplitude of Josephson tunnel junctions

    International Nuclear Information System (INIS)

    Broom, R.F.; Wolf, P.

    1977-01-01

    The surface impedance of the superconducting films comprising the electrodes of Josephson tunnel junctions has been derived from the BCS theory in the extreme London limit. Expressions have been obtained for (i) the dependence of the penetration depth lambda on frequency and temperature, and (ii) the quality factor Q of the junction cavity, attributable to surface absorption in the electrodes. The effect of thin electrodes (t 9 or approx. = lambda) is also included in the calculations. Comparison of the calculated frequency dependence of lambda with resonance measurements on Pb-alloy and all-Nb tunnel junctions yields quite good agreement, indicating that the assumptions made in the theory are reasonable. Measurements of the (current) amplitude of the resonance peaks of the junctions have been compared with the values obtained from inclusion of the calculated Q in the theory by Kulik. In common with observations on microwave cavities by other workers, we find that a small residual conductivity must be added to the real part of the BCS value. With its inclusion, good agreement is found between calculation and experiment, within the range determined by the simplifying assumptions of Kulik's theory. From the results, we believe the calculation of Q to be reasonably accurate for the materials investigated. It is shown that the resonance amplitude of Josephson junctions can be calculated directly from the material constants and a knowledge of the residual conductivity

  19. LTS junction technology for RSFQ and qubit circuit applications

    International Nuclear Information System (INIS)

    Buchholz, F.-Im.; Balashov, D.V.; Dolata, R.; Hagedorn, D.; Khabipov, M.I.; Kohlmann, J.; Zorin, A.B.; Niemeyer, J.

    2006-01-01

    The potentials of LTS junction technology and electronics offer innovative solutions for the processing of quantum information in RSFQ and qubit circuits. We discuss forthcoming approaches based on standard SIS technology and addressed to the development of new superconducting device concepts. The challenging problem of reducing back action noise of the RSFQ circuits deteriorating coherent properties of the qubit is currently solved by implementing Josephson junctions with non-linear shunts based on LTS SIS-SIN technology. Upgraded NbAlO x trilayer technology enables the fabrication of high-quality mesoscopic Josephson junction transistors down to the nanometer range suitable for a qubit-operation regime. As applications, circuit concepts are presented which combine superconducting devices of different nature

  20. Photovoltaic Cells Improvised With Used Bipolar Junction Transistors

    International Nuclear Information System (INIS)

    Akintayo, J. A

    2002-01-01

    The understanding of the underlying principle that the solar cell consists of a p-n junction is exploited to adapt the basic NPN or PNP Bipolar Junction Transistors (BJT) to serve as solar cells. In this mode the in improvised solar cell have employed just the emitter and the base sections with an intact emitter/base junction as the active PN area. The improvised devices tested screened and sorted are wired up in strings, blocks and modules. The photovoltaic modules realised tested as close replica of solar cells with output voltage following insolation level. Further work need be done on the modules to make them generate usable levels of output voltage and current

  1. Fluxons in long and annular intrinsic Josephson junction stacks

    CERN Document Server

    Clauss, T; Moessle, M; Müller, A; Weber, A; Kölle, D; Kleiner, R

    2002-01-01

    A promising approach towards a THz oscillator based on intrinsic Josephson junctions in high-temperature superconductors is based on the collective motion of Josephson fluxons, which are predicted to form various configurations ranging from a triangular to a quadratic lattice. Not only for this reason, but certainly also for the sake of basic physics, several experimental and theoretical investigations have been done on the subject of collective fluxon dynamics in stacked intrinsic Josephson junctions. In this paper we will present some experimental results on the fluxon dynamics of long intrinsic Josephson junction stacks made of Bi sub 2 Sr sub 2 CaCu sub 2 O sub 8. The stacks were formed either in an open or in an annular geometry, and clear resonant fluxon modes were observed. Experiments discussed include measurements of current-voltage characteristics in external magnetic fields and in external microwave fields.

  2. Tuning spin transport across two-dimensional organometallic junctions

    Science.gov (United States)

    Liu, Shuanglong; Wang, Yun-Peng; Li, Xiangguo; Fry, James N.; Cheng, Hai-Ping

    2018-01-01

    We study via first-principles modeling and simulation two-dimensional spintronic junctions made of metal-organic frameworks consisting of two Mn-phthalocyanine ferromagnetic metal leads and semiconducting Ni-phthalocyanine channels of various lengths. These systems exhibit a large tunneling magnetoresistance ratio; the transmission functions of such junctions can be tuned using gate voltage by three orders of magnitude. We find that the origin of this drastic change lies in the orbital alignment and hybridization between the leads and the center electronic states. With physical insight into the observed on-off phenomenon, we predict a gate-controlled spin current switch based on two-dimensional crystallines and offer general guidelines for designing spin junctions using 2D materials.

  3. Microwave oscillator using arrays of long Josephson junctions

    International Nuclear Information System (INIS)

    Pagano, S.; Monaco, R.; Costabile, G.

    1989-01-01

    The authors report on measurements performed on integrated superconducting devices based on arrays of long Josephson tunnel junctions operating in the resonant fluxon oscillation regime (i.e. biased on the Zero Field Steps). The electromagnetic coupling among the junction causes a mutual phase-locking of the fluxon oscillations with a corresponding increase of the emitted power and a decrease of the signal linewidth. This phase-locked state can be controlled by means of an external dc bias current and magnetic field. The effect of the generated microwave signal has been observed on a small Josephson tunnel junction coupled to the array via a microstrip transmission line. The feasibility of the reported devices as local oscillators in an integrated microwave Josephson receiver is discussed

  4. Robust spin transfer torque in antiferromagnetic tunnel junctions

    KAUST Repository

    Saidaoui, Hamed Ben Mohamed

    2017-04-18

    We theoretically study the current-induced spin torque in antiferromagnetic tunnel junctions, composed of two semi-infinite antiferromagnetic layers separated by a tunnel barrier, in both clean and disordered regimes. We find that the torque enabling electrical manipulation of the Néel antiferromagnetic order parameter is out of plane, ∼n×p, while the torque competing with the antiferromagnetic exchange is in plane, ∼n×(p×n). Here, p and n are the Néel order parameter direction of the reference and free layers, respectively. Their bias dependence shows behavior similar to that in ferromagnetic tunnel junctions, the in-plane torque being mostly linear in bias, while the out-of-plane torque is quadratic. Most importantly, we find that the spin transfer torque in antiferromagnetic tunnel junctions is much more robust against disorder than that in antiferromagnetic metallic spin valves due to the tunneling nature of spin transport.

  5. dc properties of series-parallel arrays of Josephson junctions in an external magnetic field

    International Nuclear Information System (INIS)

    Lewandowski, S.J.

    1991-01-01

    A detailed dc theory of superconducting multijunction interferometers has previously been developed by several authors for the case of parallel junction arrays. The theory is now extended to cover the case of a loop containing several junctions connected in series. The problem is closely associated with high-T c superconductors and their clusters of intrinsic Josephson junctions. These materials exhibit spontaneous interferometric effects, and there is no reason to assume that the intrinsic junctions form only parallel arrays. A simple formalism of phase states is developed in order to express the superconducting phase differences across the junctions forming a series array as functions of the phase difference across the weakest junction of the system, and to relate the differences in critical currents of the junctions to gaps in the allowed ranges of their phase functions. This formalism is used to investigate the energy states of the array, which in the case of different junctions are split and separated by energy barriers of height depending on the phase gaps. Modifications of the washboard model of a single junction are shown. Next a superconducting inductive loop containing a series array of two junctions is considered, and this model is used to demonstrate the transitions between phase states and the associated instabilities. Finally, the critical current of a parallel connection of two series arrays is analyzed and shown to be a multivalued function of the externally applied magnetic flux. The instabilities caused by the presence of intrinsic serial junctions in granular high-T c materials are pointed out as a potential source of additional noise

  6. Stability of large-area molecular junctions

    NARCIS (Netherlands)

    Akkerman, Hylke B.; Kronemeijer, Auke J.; Harkema, Jan; van Hal, Paul A.; Smits, Edsger C. P.; de Leeuw, Dago M.; Blom, Paul W. M.

    The stability of molecular junctions is crucial for any application of molecular electronics. Degradation of molecular junctions when exposed to ambient conditions is regularly observed. In this report the stability of large-area molecular junctions under ambient conditions for more than two years

  7. RF assisted switching in magnetic Josephson junctions

    Science.gov (United States)

    Caruso, R.; Massarotti, D.; Bolginov, V. V.; Ben Hamida, A.; Karelina, L. N.; Miano, A.; Vernik, I. V.; Tafuri, F.; Ryazanov, V. V.; Mukhanov, O. A.; Pepe, G. P.

    2018-04-01

    We test the effect of an external RF field on the switching processes of magnetic Josephson junctions (MJJs) suitable for the realization of fast, scalable cryogenic memories compatible with Single Flux Quantum logic. We show that the combined application of microwaves and magnetic field pulses can improve the performances of the device, increasing the separation between the critical current levels corresponding to logical "0" and "1." The enhancement of the current level separation can be as high as 80% using an optimal set of parameters. We demonstrate that external RF fields can be used as an additional tool to manipulate the memory states, and we expect that this approach may lead to the development of new methods of selecting MJJs and manipulating their states in memory arrays for various applications.

  8. Ultimately short ballistic vertical graphene Josephson junctions

    Science.gov (United States)

    Lee, Gil-Ho; Kim, Sol; Jhi, Seung-Hoon; Lee, Hu-Jong

    2015-01-01

    Much efforts have been made for the realization of hybrid Josephson junctions incorporating various materials for the fundamental studies of exotic physical phenomena as well as the applications to superconducting quantum devices. Nonetheless, the efforts have been hindered by the diffusive nature of the conducting channels and interfaces. To overcome the obstacles, we vertically sandwiched a cleaved graphene monoatomic layer as the normal-conducting spacer between superconducting electrodes. The atomically thin single-crystalline graphene layer serves as an ultimately short conducting channel, with highly transparent interfaces with superconductors. In particular, we show the strong Josephson coupling reaching the theoretical limit, the convex-shaped temperature dependence of the Josephson critical current and the exceptionally skewed phase dependence of the Josephson current; all demonstrate the bona fide short and ballistic Josephson nature. This vertical stacking scheme for extremely thin transparent spacers would open a new pathway for exploring the exotic coherence phenomena occurring on an atomic scale. PMID:25635386

  9. Reliability assessment of creep rupture life for Gr. 91 steel

    International Nuclear Information System (INIS)

    Kim, Woo-Gon; Park, Jae-Young; Kim, Seon-Jin; Jang, Jinsung

    2013-01-01

    Highlights: • Statistical analysis of a number of creep rupture data based on Z parameter. • Determination of the constant C in LM parameter and long-term creep life prediction. • Generation of random variables for Z s and Z cr by Monte-Carlo simulation in a SCRI model. • Examples for design application were reasonably drawn from the viewpoints of reliability. - Abstract: This paper presents reliability assessment of the long-term creep life of Gr. 91 steel, which is a major structural material for high temperature structural components of Generation-IV reactor systems. A number of creep rupture data for Gr. 91 steel were collected through literature surveys, and the long-term creep life was predicted by Larson–Miller parameter. A “Z parameter” method was used to describe the magnitude of the deviation of the creep rupture data to a master curve. A “Service Condition-creep Rupture property Interference (SCRI) model” based on the Z parameter was used to simultaneously consider the scattering of the creep rupture data of materials and the fluctuations of service conditions in reliability assessment. A statistical analysis of the creep rupture data was conducted by the Z parameter. To carry out the SCRI model, a number of random variables for Z s describing service conditions and Z cr describing the dispersion of the creep rupture data were generated using a Monte-Carlo simulation technique. As examples for application, the creep rupture life under a certain service conditions of Gr. 91 steel was reasonably drawn from the viewpoints of reliability

  10. Electrochemically assisted mechanically controllable break junction studies on the stacking configurations of oligo(phenylene ethynylene)s molecular junctions

    International Nuclear Information System (INIS)

    Zheng, Jue-Ting; Yan, Run-Wen; Tian, Jing-Hua; Liu, Jun-Yang; Pei, Lin-Qi; Wu, De-Yin; Dai, Ke; Yang, Yang; Jin, Shan

    2016-01-01

    Highlights: • I-V characteristics of a series of oligo(phenylene ethynylene)s molecular junctions were measured. • Conductance values were found to be dependent on molecular length and substituent group. • The measured low conductance values were explained by theoretical calculations. • EC-MCBJ is feasible to fabricate and characterize molecular junctions. - Abstract: We demonstrate an electrochemically assisted mechanically controllable break junction (EC-MCBJ) approach for current-voltage characteristic (I-V curve) measurements of metal/molecule/metal junctions. A series of oligo(phenylene ethynylene)s compounds (OPEs), including those involving electron withdrawing substituent group and different backbone lengths, had been successfully designed, synthesized, and placed onto the fabricated nanogap to form molecular junctions. The observed evolution in the measured conductances of OPEs indicates that there is a dependence of conductance on molecular length and substituent group. Compared with those extracted from conductance histogram construction, the conductances of OPEs measured from I-V curves are considerably lower. Based on the transmission spectra of OPEs that calculated by density functional theory (DFT) combined with non-equilibrium Green’s function (NEGF) method, this difference was attributed to our distinct experimental operation, which may give rise to a stacking configuration of two OPE molecules.

  11. Versatile multi-layer Josephson junction process for vortex molecules

    Energy Technology Data Exchange (ETDEWEB)

    Meckbach, Johannes Maximilian; Buehler, Simon; Merker, Michael; Il' in, Konstantin; Siegel, Michael [Institut fuer Mikro- und Nanoelektronische Systeme, KIT (Germany); Buckenmaier, Kai; Gaber, Tobias; Kienzle, Uta; Neumaier, Benjamin; Goldobin, Edward; Kleiner, Reinhold; Koelle, Dieter [Physikalisches Institut - Experimentalphysik II, Universitaet Tuebingen (Germany)

    2012-07-01

    In long Josephson junctions magnetic flux may penetrate the barrier resulting in a so-called Josephson-Vortex carrying one flux quantum Φ{sub 0}. In recent years a new type of Josephson-Vortex became available, which carries any arbitrary fraction Φ = -Φ{sub 0}κ/2π of magnetic flux. These fractional vortices (p-vortices) spontaneously appear at discontinuities of the Josephson phase along the junction, which in turn are created using a pair of current injectors. We present a new Nb/Al-AlO{sub x}/Nb process for the fabrication of Josephson junctions of very high quality. Placing two injector pairs along the strongly underdamped long junctions allows the investigation of fractional vortex molecules. The topological charge of each vortex and their interaction can be altered even during experiment by changing the individual injector currents. Vortex molecule states have been measured using asymmetric DC-SQUIDs coupled to the vortices by overlying pick-up loops. To uphold the p-vortices we use persistent currents, which can be altered using heat switches. Fractional vortex molecules are promising candidates for a new type of qubits.

  12. Manipulating Josephson junctions in thin-films by nearby vortices

    International Nuclear Information System (INIS)

    Kogan, V.G.; Mints, R.G.

    2014-01-01

    Highlights: • Vortex located in a bank of a planar Josephson junction changes its character. • Vortex located at some discreet positions in thin strip bank suppresses to zero the zero-field current. • The number of these positions is equal to the number of vortices trapped. • Critical current-field patterns are strongly affected by the vortex position. - Abstract: It is shown that a vortex trapped in one of the banks of a planar edge-type Josephson junction in a narrow thin-film superconducting strip can change drastically the dependence of the junction critical current on the applied field, I c (H). When the vortex is placed at certain discrete positions in the strip middle, the pattern I c (H) has zero at H=0 instead of the traditional maximum of ‘0-type’ junctions. The number of these positions is equal to the number of vortices trapped at the same location. When the junction–vortex separation exceeds ∼W, the strip width, I c (H) is no longer sensitive to the vortex presence. The same is true for any separation if the vortex approaches the strip edges

  13. Design of thin InGaAsN(Sb) n-i-p junctions for use in four-junction concentrating photovoltaic devices

    Science.gov (United States)

    Wilkins, Matthew M.; Gupta, James; Jaouad, Abdelatif; Bouzazi, Boussairi; Fafard, Simon; Boucherif, Abderraouf; Valdivia, Christopher E.; Arès, Richard; Aimez, Vincent; Schriemer, Henry P.; Hinzer, Karin

    2017-04-01

    Four-junction solar cells for space and terrestrial applications require a junction with a band gap of ˜1 eV for optimal performance. InGaAsN or InGaAsN(Sb) dilute nitride junctions have been demonstrated for this purpose, but in achieving the 14 mA/cm2 short-circuit current needed to match typical GaInP and GaAs junctions, the open-circuit voltage (VOC) and fill factor of these junctions are compromised. In multijunction devices incorporating materials with short diffusion lengths, we study the use of thin junctions to minimize sensitivity to varying material quality and ensure adequate transmission into lower junctions. An n-i-p device with 0.65-μm absorber thickness has sufficient short-circuit current, however, it relies less heavily on field-aided collection than a device with a 1-μm absorber. Our standard cell fabrication process, which includes a rapid thermal anneal of the contacts, yields a significant improvement in diffusion length and device performance. By optimizing a four-junction cell around a smaller 1-sun short-circuit current of 12.5 mA/cm2, we produced an InGaAsN(Sb) junction with open-circuit voltage of 0.44 V at 1000 suns (1 sun=100 mW/cm2), diode ideality factor of 1.4, and sufficient light transmission to allow >12.5 mA/cm2 in all four subcells.

  14. Comparison on Mechanical Properties of SA508 Gr.3 Cl.1, Cl.2, and Gr.4N Low Alloy Steels for Pressure Vessels

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Min-Chul; Park, Sang-Gyu; Lee, Bong-Sang [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of); Lee, Ki-Hyoung [Korea Institute of Nuclear Safety, Daejeon (Korea, Republic of)

    2014-10-15

    In this study, microstructure and mechanical properties of SA508 Gr.3 Cl. 1, Cl.2, and Gr.4N low alloy steels are characterized to compare their properties. To evaluate the fracture toughness in the transition region, the master curve method according to ASTM E1921 was adopted in the cleavage transition region. Tensile tests and Charpy impact tests were also performed to evaluate the mechanical properties, and a microstructural investigation was carried out. The microstructure and mechanical properties of SA508 Gr.3 Cl.1, Cl2 and Gr.4N low alloy steels were characterized.. The predominant microstructure of SA508 Gr.4N model alloy is tempered martensite, while SA508 Gr.3 Cl.1 and Cl.2 steels show a typical tempered upper bainitic structure. SA508 Gr. 4N model alloy shows the best strength and transition behavior among the three SA508 steels. SA508 Gr.3 Cl.2 steel also has quite good strength, but there is a loss of toughness.

  15. Dokumentaalfilm "Maile Grünbergi värvilised maailmad" = "Maile Grünberg's colourful worlds": a documentary / Karin Paulus, Priit Põldme

    Index Scriptorium Estoniae

    Paulus, Karin, 1975-

    2015-01-01

    Sisearhitekt Maile Grünbergist ja 2014. aastal temast valminud dokumentaalfilmist "Maile Grünbergi värvilised maailmad". Režissöör Peeter Brambat, tegevprodutsent Priit Põldme, käsikiri Karin Paulus, Peeter Brambat, Priit Põldme. 2014. aasta Kultuurkapitali Arhitektuuripreemia kandidaat

  16. Study on corrosion resistance of A106Gr.B and A672Gr.B60 in dynamic water loop with high temperature and pressure

    International Nuclear Information System (INIS)

    Tian Jue; Wang Hui; Li Xinmin

    2014-01-01

    Due to the low carbon and low alloy Cr content, flow accelerates corrosion prone to have a serious impact on safety. AP1000 is the most advanced nuclear power technology in recent years. The plant used A672Gr.B60 as an alternative feed pipe to reduce the impact of flow accelerated corrosion. The impact of different flow rates, alkaline agent type and material property on A672Gr.B60 and A106Gr.B were characterized by scanning electron microscope (SEM), energy-dispersive X-ray spectroscopy (EDS) and X-ray photoelectronic spectroscopy (XPS). After 336 h experiments were conducted, results show that the corrosion rate of A672Gr.B60 is much lower than that of A106Gr.B, and the density of oxidation film on A672Gr.B60 is superior to A106Gr.B. Ethanolamine (ETA) as an alkaline agent is better to reduce FAC to A106Gr.B, and it also can make the oxidation film become denser. Changes in flow rate will affect the size, shape and distribution of the oxide particles, and will also affect the thickness of the oxide film. Both of two materials were composed by Fe 3 O 4 . (authors)

  17. Phenotypic variation within European carriers of the Y-chromosomal gr/gr deletion is independent of Y-chromosomal background

    DEFF Research Database (Denmark)

    Krausz, C; Giachini, C; Xue, Y

    2008-01-01

    of duplications and the Y-chromosomal haplogroup were characterised. Although the study had good power to detect factors that accounted for >or=5.5% of the variation in sperm concentration, no such factor was found. A negative effect of gr/gr deletions followed by b2/b4 duplication was found within...

  18. ΛGR Centennial: Cosmic Web in Dark Energy Background

    Science.gov (United States)

    Chernin, A. D.

    The basic building blocks of the Cosmic Web are groups and clusters of galaxies, super-clusters (pancakes) and filaments embedded in the universal dark energy background. The background produces antigravity, and the antigravity effect is strong in groups, clusters and superclusters. Antigravity is very weak in filaments where matter (dark matter and baryons) produces gravity dominating in the filament internal dynamics. Gravity-antigravity interplay on the large scales is a grandiose phenomenon predicted by ΛGR theory and seen in modern observations of the Cosmic Web.

  19. Gröbner bases and convex polytopes

    CERN Document Server

    Sturmfels, Bernd

    1995-01-01

    This book is about the interplay of computational commutative algebra and the theory of convex polytopes. It centers around a special class of ideals in a polynomial ring: the class of toric ideals. They are characterized as those prime ideals that are generated by monomial differences or as the defining ideals of toric varieties (not necessarily normal). The interdisciplinary nature of the study of Gröbner bases is reflected by the specific applications appearing in this book. These applications lie in the domains of integer programming and computational statistics. The mathematical tools presented in the volume are drawn from commutative algebra, combinatorics, and polyhedral geometry.

  20. El periodismo gráfico durante la dictadura

    OpenAIRE

    Díaz, César Luis

    2017-01-01

    Este volumen del Centro de Estudios en Historia/Comunicación/Periodismo/Medios (CEHICOPEME), está dedicado al examen de ocho de los principales medios gráficos argentinos durante la última dictadura cívico-militar. Se trata de una decena de artículos que si bien fueron realizados como obras en sí mismas, no pueden ser aisladas de una forma de concebir la disciplina que las contiene, cuya matriz de producción se gestó en esta Facultad de Periodismo y Comunicación Social (UNLP) hace poco más de...

  1. Y-junction of superconducting Josephson chains

    International Nuclear Information System (INIS)

    Giuliano, Domenico; Sodano, Pasquale

    2009-01-01

    We show that, for pertinent values of the fabrication and control parameters, an attractive finite coupling fixed point emerges in the phase diagram of a Y-junction of superconducting Josephson chains. The new fixed point arises only when the dimensionless flux f piercing the central loop of the network equals π and, thus, does not break time-reversal invariance; for f≠π, only the strongly coupled fixed point survives as a stable attractive fixed point. Phase slips (instantons) have a crucial role in establishing this transition: we show indeed that, at f=π, a new set of instantons-the W-instantons-comes into play to destabilize the strongly coupled fixed point. Finally, we provide a detailed account of the Josephson current-phase relationship along the arms of the network, near each one of the allowed fixed points. Our results evidence remarkable similarities between the phase diagram accessible to a Y-junction of superconducting Josephson chains and the one found in the analysis of quantum Brownian motion on frustrated planar lattices

  2. GAP junctional communication in brain secondary organizers.

    Science.gov (United States)

    Bosone, Camilla; Andreu, Abraham; Echevarria, Diego

    2016-06-01

    Gap junctions (GJs) are integral membrane proteins that enable the direct cytoplasmic exchange of ions and low molecular weight metabolites between adjacent cells. They are formed by the apposition of two connexons belonging to adjacent cells. Each connexon is formed by six proteins, named connexins (Cxs). Current evidence suggests that gap junctions play an important part in ensuring normal embryo development. Mutations in connexin genes have been linked to a variety of human diseases, although the precise role and the cell biological mechanisms of their action remain almost unknown. Among the big family of Cxs, several are expressed in nervous tissue but just a few are expressed in the anterior neural tube of vertebrates. Many efforts have been made to elucidate the molecular bases of Cxs cell biology and how they influence the morphogenetic signal activity produced by brain signaling centers. These centers, orchestrated by transcription factors and morphogenes determine the axial patterning of the mammalian brain during its specification and regionalization. The present review revisits the findings of GJ composed by Cx43 and Cx36 in neural tube patterning and discuss Cx43 putative enrollment in the control of Fgf8 signal activity coming from the well known secondary organizer, the isthmic organizer. © 2016 The Authors. Development, Growth & Differentiation published by John Wiley & Sons Australia, Ltd on behalf of Japanese Society of Developmental Biologists.

  3. Integration of organic based Schottky junctions for crossbar non-volatile memory applications

    DEFF Research Database (Denmark)

    Katsia, E.; Tallarida, G.; Ferrari, S.

    2008-01-01

    Small size Schottky junctions using two different synthesized organic semiconductors (oligophenylene-vinylenes) were integrated by standard UV lithography into crossbar arrays. The proposed integration scheme can be applied to a wide class of organics without affecting material properties. Current...

  4. Geometric dependence of Nb-Bi2Te3-Nb topological Josephson junction transport parameters

    International Nuclear Information System (INIS)

    Molenaar, C G; Leusink, D P; Brinkman, A; Wang, X L

    2014-01-01

    Superconductor-topological insulator–superconductor Josephson junctions have been fabricated in order to study the width dependence of the critical current, normal state resistance and flux periodicity of the critical current modulation in an external field. Previous literature reports suggest anomalous scaling in topological junctions due to the presence of Majorana bound states. However, for most realized devices, one would expect that trivial 2π-periodic Andreev levels dominate transport. We also observe anomalous scaling behaviour of junction parameters, but the scaling can be well explained by mere geometric effects, such as the parallel bulk conductivity shunt and flux focusing. (paper)

  5. Macroscopic quantum tunneling in 1 μm Nb junctions below 100mK

    International Nuclear Information System (INIS)

    Voss, R.F.; Webb, R.A.

    1981-01-01

    The transition probabilities out of the superconducting state of low current density 1 μm Nb Josephson junctions with capacitance < 0.15 pF have been measured as a function of temperature T down to 3 mK. Below 100 mK the distribution widths become independent of T. Junctions with critical currents that differ by an order of magnitude have the same dependence of relative width on T. The low T results are interpreted in terms of quantum tunneling of the (macroscopic) junction phase. The observed low temperature widths are smaller than expected indicating the necessity of corrections to the simple WKB tunneling rates. (orig.)

  6. Elliptic annular Josephson tunnel junctions in an external magnetic field: the statics

    DEFF Research Database (Denmark)

    Monaco, Roberto; Granata, Carmine; Vettoliere, Antonio

    2015-01-01

    We have investigated the static properties of one-dimensional planar Josephson tunnel junctions (JTJs) in the most general case of elliptic annuli. We have analyzed the dependence of the critical current in the presence of an external magnetic field applied either in the junction plane...... symmetric electrodes a transverse magnetic field is equivalent to an in-plane field applied in the direction of the current flow. Varying the ellipse eccentricity we reproduce all known results for linear and ring-shaped JTJs. Experimental data on high-quality Nb/Al-AlOx/Nb elliptic annular junctions...

  7. How secure are Grünbaum's Foundations?

    Science.gov (United States)

    Wax, M L

    1995-06-01

    As exemplified in Freud's cases, behaviour becomes meaningful as it is situated within a history (narrative). Operating from a Unity of Science orientation, Grünbaum emphasises causal rather than meaningful connections, and selectively follows early Freud: when (and only when) the repressed historical cause is uncovered, the symptom disappears. Since that consequential connection has proven to be not causally invariable Grünbaum discredits psychoanalysis as unscientific. Counterposed to his causal approach is that of philosopher MacIntyre, who contends that identity and moral responsibility must be situated within personal history. Also counterposed is sociologist Max Weber who struggled with parallel issues in the German 'Geisteswissenschaften' of Freud's time. The oedipal complex is akin to Weber's ideal types, as are the various models implicit in analytic discourse. Psychoanalysis must be understood as a normative science. In so far as contemporary psychology and psychiatry emphasise causal relationships, their procedures (experimental, epidemiological) can never hope to encompass psychoanalysis. Like other grand theoretical systems, psychoanalysis has applications in wide arenas--personal, developmental, familial, cultural, religious, historical, ethnological; its development during the last century has come from the interaction of findings from those arenas with those from the consulting room.

  8. Interruption with the Migration of Iodide by GR(CT)

    International Nuclear Information System (INIS)

    Min, J. H.; Lee, J. K.; Jeong, J. T.

    2012-01-01

    The purpose of this study is to understand the influence of green rust on the migration of iodide. GR(CT) would be major corrosion product of iron near the seawater or saline layer in underground. The GR(CT) may play an important role in the retardation of the iodide migration in a deep geological environment due to it's anionic exchange reaction. In underground radioactive waste repository, the corrosion of iron canisters would be proceed as follows; Fe(II) and/or Fe(III) dissolved from iron containers → Fe(II)(OH) 2 and/or Fe(III)(OH) 3 → Green rust → Lepidocrocite or Magnetite → Goetite etc. Generally, the green rust has known to exist in environments close to the Fe(Π)/Fe(ΠΙ) transition zone or between the oxidized layer and reduced layer in the underground. As anion exchanger and strong reducer, the green rusts can affect the migration of anions, reactions involving green rusts were poorly studied in relation to the safety assessment of radioactive waste repository

  9. Flexible 2D layered material junctions

    Science.gov (United States)

    Balabai, R.; Solomenko, A.

    2018-03-01

    Within the framework of the methods of the electron density functional and the ab initio pseudopotential, we have obtained the valence electron density spatial distribution, the densities of electron states, the widths of band gaps, the charges on combined regions, and the Coulomb potentials for graphene-based flexible 2D layered junctions, using author program complex. It is determined that the bending of the 2D layered junctions on the angle α leads to changes in the electronic properties of these junctions. In the graphene/graphane junction, there is clear charge redistribution with different signs in the regions of junctions. The presence in the heterojunctions of charge regions with different signs leads to the formation of potential barriers. The greatest potential jump is in the graphene/fluorographene junction. The greatest value of the band gap width is in the graphene/graphane junction.

  10. Observation of nonresonant vortex motion in a long Josephson tunnel junction

    International Nuclear Information System (INIS)

    Rajeevakumar, T.V.; Przybysz, J.X.; Chen, J.T.; Langenberg, D.N.

    1980-01-01

    We have observed resistive branches in the I-V characteristics of long Josephson junctions which can be simply understood in terms of the motion of individual Josephson fluxoids with reflection as antifluxoids at the junction edges. The characteristics of these resistive branches differ qualitatively from those of the current singularities previously reported by Chen et al. and by Fulton and Dynes. Our results indicate that the current singularities are not simply related to the motion of individual fluxoids

  11. Niobium tunnel junction fabrication using e-gun evaporation and SNAP

    Science.gov (United States)

    Kortlandt, J.; van der Zant, H. S. J.; Schellingerhout, A. J. G.; Mooij, J. E.

    1990-11-01

    We have fabricated high quality small area Nb-Al-Al 2O 3-Nb junctions with SNAP, making use of e-beam evaporation in a 10 -5 Pa diffusion pumped vacuum system. Nominal dimensions of the junctions are 8x8, 4x4 and 2x2 μm 2. We obtain typical current densities of 5-6 × 10 +2A/cm 2 and (critical current) x (subgap resistance) products of 40 mV.

  12. Towards ferromagnet/superconductor junctions on graphene

    International Nuclear Information System (INIS)

    Pakkayil, Shijin Babu

    2015-01-01

    the design which makes it possible to verify the quality of both type of contacts independently. The Josephson junction formed by two superconducting contacts and graphene between them shows several subgap conductance peaks corresponding to multiple Andreev reflections (MAR) taking place between the superconducting contacts. The observation of MAR shows that the superconductor has a good transparent interface with the graphene. The lower limit of the calculated superconducting coherence length (L φ ) in graphene is higher than the separation between the ferromagnet and the superconductor (100 nm), which is a necessary condition to observe interaction between the ferromagnet and the superconductor. Nonlocal spin valve measurements show that all four ferromagnetic contacts are spin sensitive and have a spin injection/detection efficiency of 10-12 %. Three terminal pseudo nonlocal measurements done on a ferromagnet/graphene/superconductor/graphene/ferromagnet (F/G/S/G/F) junction shows a two peak structure which suggests the occurrence of spin imbalance in the quasiparticle density of states in the superconductor. The measurements also show the disappearance of the two peak structure whenever the superconductor becomes normal. The amplitude of the peaks seems to increase with increasing ac bias current which is probably due to the higher number of diffusing spins. Reversing the magnetisation direction of one of the ferromagnet (injector or detector) however did not reverse the position of the peaks which is unusual. So further measurements need to be done on similar devices preferably at the base temperature of a dilution refrigerator to conclusively prove the existence of spin imbalance in the superconductor.

  13. Towards ferromagnet/superconductor junctions on graphene

    Energy Technology Data Exchange (ETDEWEB)

    Pakkayil, Shijin Babu

    2015-07-01

    are also part of the design which makes it possible to verify the quality of both type of contacts independently. The Josephson junction formed by two superconducting contacts and graphene between them shows several subgap conductance peaks corresponding to multiple Andreev reflections (MAR) taking place between the superconducting contacts. The observation of MAR shows that the superconductor has a good transparent interface with the graphene. The lower limit of the calculated superconducting coherence length (L{sub φ}) in graphene is higher than the separation between the ferromagnet and the superconductor (100 nm), which is a necessary condition to observe interaction between the ferromagnet and the superconductor. Nonlocal spin valve measurements show that all four ferromagnetic contacts are spin sensitive and have a spin injection/detection efficiency of 10-12 %. Three terminal pseudo nonlocal measurements done on a ferromagnet/graphene/superconductor/graphene/ferromagnet (F/G/S/G/F) junction shows a two peak structure which suggests the occurrence of spin imbalance in the quasiparticle density of states in the superconductor. The measurements also show the disappearance of the two peak structure whenever the superconductor becomes normal. The amplitude of the peaks seems to increase with increasing ac bias current which is probably due to the higher number of diffusing spins. Reversing the magnetisation direction of one of the ferromagnet (injector or detector) however did not reverse the position of the peaks which is unusual. So further measurements need to be done on similar devices preferably at the base temperature of a dilution refrigerator to conclusively prove the existence of spin imbalance in the superconductor.

  14. Charge transport in junctions between d-wave superconductors

    International Nuclear Information System (INIS)

    Barash, Y.S.; Galaktionov, A.V.; Zaikin, A.D.

    1995-01-01

    We develop a microscopic analysis of superconducting and dissipative currents in junctions between superconductors with d-wave symmetry of the order parameter. We study the proximity effect in such superconductors and show that for certain crystal orientations the superconducting order parameter can be essentially suppressed in the vicinity of a nontransparent specularly reflecting boundary. This effect strongly influences the value and the angular dependence of the dc Josephson current j S . At T∼T c it leads to a crossover between j S ∝T c -T and j S ∝(T c -T) 2 respectively for homogeneous and nonhomogeneous distribution of the order parameter in the vicinity of a tunnel junction. We show that at low temperatures the current-phase relation j S (cphi) for superconductor--normal-metal--superconductor junctions and short weak links between d-wave superconductors is essentially nonharmonic and contains a discontinuity at cphi=0. This leads to further interesting features of such systems which can be used for pairing symmetry tests in high-temperature superconductors (HTSC). We also investigated the low-temperature I-V curves of normal-metal--superconductor and superconductor-superconductor tunnel junctions and demonstrated that depending on the junction type and crystal orientation these curves show zero-bias anomalies I∝V 2 , I∝V 2 ln(1/V), and I∝V 3 caused by the gapless behavior of the order parameter in d-wave superconductors. Many of our results agree well with recent experimental findings for HTSC compounds

  15. Comparison of SA508 Gr.3 and SA508 Gr.4N Low Alloy Steels for Reactor Pressure Vessel Steel

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Min Chul; Lee, B. S

    2009-12-15

    The microstructural characteristics and mechanical properties of SA508 Gr.3 Mn-Mo-Ni low alloy steel and SA508 Gr.4N Ni-Mo-Cr low alloy steel were investigated. The differences in the stable phases between these two low alloy steels were evaluated by means of a thermodynamic calculation using ThermoCalc. They were then compared to microstructural features and correlated with mechanical properties. Mn-Mo-Ni low alloy steel shows the upper bainite structure which has the coarse cementite in the lath boundaries. However, Ni-Mo-Cr low alloy steel shows the mixture of lower bainite and tempered martensite structure that homogeneously precipitates the small carbides such as M{sub 23}C{sub 6} and M{sub 7}C{sub 3} due to an increase of hardenability and Cr addition. In the mechanical properties, Ni-Mo-Cr low alloy steel has higher strength and toughness than Mn-Mo-Ni low alloy steel. Ni and Cr additions increase the strength by solid solution hardening. Besides, microstructural changes from upper bainite to tempered martensite improve the strength of the low alloy steel by grain refining effect. And the changes in the precipitation behavior by Cr addition improve the ductile-brittle transition behavior along with a toughening effect of Ni addition.

  16. Differential MR/GR Activation in Mice Results in Emotional States Beneficial or Impairing for Cognition

    Directory of Open Access Journals (Sweden)

    Vera Brinks

    2007-01-01

    Full Text Available Corticosteroids regulate stress response and influence emotion, learning, and memory via two receptors in the brain, the high‐affinity mineralocorticoid (MR and low‐affinity glucocorticoid receptor (GR. We test the hypothesis that MR- and GR-mediated effects interact in emotion and cognition when a novel situation is encountered that is relevant for a learning process. By adrenalectomy and additional constant corticosterone supplement we obtained four groups of male C57BL/6J mice with differential chronic MR and GR activations. Using a hole board task, we found that mice with continuous predominant MR and moderate GR activations were fast learners that displayed low anxiety and arousal together with high directed explorative behavior. Progressive corticosterone concentrations with predominant action via GR induced strong emotional arousal at the expense of cognitive performance. These findings underline the importance of a balanced MR/GR system for emotional and cognitive functioning that is critical for mental health.

  17. NbN-AlN-NbN Josephson junctions on different substrates

    Energy Technology Data Exchange (ETDEWEB)

    Merker, Michael; Bohn, Christian; Voellinger, Marvin; Ilin, Konstantin; Siegel, Michael [KIT, Karlsruhe (Germany)

    2016-07-01

    Josephson junction technology is important for the realization of high quality cryogenic devices such as SQUIDs, RSFQ or SIS-mixers. The material system based on NbN/AlN/NbN tri-layer has gained a lot of interest, because it offers higher gap voltages and critical current densities compared to the well-established Nb/Al-AlOx/Nb technology. However, the realization of high quality Josephson junctions is more challenging. We developed a technology of Josephson junctions on a variety of substrates such as Silicon, Sapphire and Magnesium oxide and compared the quality parameters of these junctions at 4.2 K. The gap voltages achieved a range from 4 mV (for the junctions on Si) to 5.8 mV (in case of MgO substrates) which is considerably higher than those obtained from Nb based Josephson junctions. Another key parameter is the ratio of the subgap resistance to the normal state resistance. This so-called subgap ratio corresponds to the losses in a Josephson junction which have to be minimized. So far, subgap ratios of 26 have been achieved. Further careful optimization of the deposition conditions is required to maximize this ratio, The details of the optimization of technology and of characterization of NbN/AlN/NbN junctions will be presented and discussed.

  18. Electrical resistivity of monolayers and bilayers of alkanethiols in tunnel junction with gate electrode

    International Nuclear Information System (INIS)

    York, Roger L.; Nacionales, David; Slowinski, Krzysztof

    2005-01-01

    The tunneling resistances of monolayers and bilayers of n-alkanethiols in macroscopic Hg-Hg junctions with an electrochemical gate are reported. The resistances near zero bias calculated per 1 hydrocarbon chain vary from (5 ± 4) x 10 12 Ω for n-nonanethiol to (4 ± 2) x 10 16 Ω for n-octadecanethiol. These values indicate that monolayers of hydrocarbons in Hg-Hg junctions are substantially more resistive as compared to measurements employing microscopic tunnel junctions. The tunneling resistances of monolayer junctions are approximately 1 order of magnitude larger than those of bilayer junctions containing the same number of atoms indicating inefficient electronic coupling across the non-bonded -CH 3 |Hg interface. The symmetric current-voltage curves observed for the asymmetric junctions of Hg-S-(CH 2 ) n -CH 3 |Hg type suggest that these junctions do not behave as molecular diodes. Additional experimental evidence for the nature of the -CH 3 |Hg interface in the Hg-S-(CH 2 ) n -CH 3 |Hg junction is also presented

  19. Realization of φ Josephson junctions with a ferromagnetic interlayer

    International Nuclear Information System (INIS)

    Sickinger, Hanna Sabine

    2014-01-01

    In this thesis, φ Josephson junctions based on 0-π junctions with a ferromagnetic interlayer are studied. Josephson junctions (JJs) with a ferromagnetic interlayer can have a phase drop of 0 or π in the ground state, depending on the thickness of the ferromagnet (0 JJs or π JJs). Also, 0-π JJs can be realized, where one segment of the junction (if taken separately) is in the 0 state, while the other segment is in the π state. One can use these π Josephson junctions as a device in superconducting circuits, where it provides a constant phase shift, i.e., it acts as a π phase battery. A generalization of a π JJ is a φ JJ, which has the phase ±φ in the ground state. The value of φ can be chosen by design and tuned in the interval 0<φ<π. The φ JJs used in this experiment were fabricated as 0-π JJs with asymmetric current densities in the 0 and π facets. This system can be described by an effective current-phase relation which is tunable by an externally applied magnetic field. The first experimental evidence of such a φ JJ is presented in this thesis. In particular it is demonstrated that (a) a φ JJ has two ground states +φ and -φ, (b) the unknown state can be detected (read out) by measuring the critical current I c (I c+ or I c- ), and (c) a particular state can be prepared by applying a magnetic field or a special bias sweep sequence. These properties of a φ JJ can be utilized, for example, as a memory cell (classical bit). Furthermore, a φ Josephson junction can be used as a deterministic ratchet. This is due to the tunable asymmetry of the potential that can be changed by the external magnetic field. Rectification curves are observed for the overdamped and the underdamped case. Moreover, experimental data of the retrapping process of the phase of a φ Josephson junction depending on the temperature is presented.

  20. Comparative Study of API 5L X60 and ASTM 572 Gr50 Steel Exposed to Crude Oil and Seawater

    Directory of Open Access Journals (Sweden)

    Marcy Viviana Chiquillo Márquez

    2018-04-01

    Full Text Available In the petroleum industry, the biphasic conditions in storage and separation tanks allow that the material to remain exposed to two different environments, causing its deterioration. In this article, an evaluation is made of the corrosive behavior and Vickers microhardness (HV of two high strength low alloy (HSLA steels and how their surfaces are characterized. The ASTM 572 Gr50 steel showed a lower corrosion rate in all systems after being immersed for 720 and 1440 hours. Characterizing the surface by means of Scanning Electron Microscopy (SEM showed uniform and localized corrosion for the both steels, and revealed that the ASTM 572 Gr50 steel shows pitting corrosion in crude oil systems. The electrochemical results revealed that the corrosion potential of API X60 steel was more negative; however the ASTM 572 Gr50 steel had a higher current density and a lower polarization resistance when immersed in an oil/seawater mixture. It also observed that, after being immersed in the corrosive fluids, the microstructures of the steels were not modified and variations in their microhardness (HV were minute.

  1. Performance of single-junction and dual-junction InGaP/GaAs solar cells under low concentration ratios

    International Nuclear Information System (INIS)

    Khan, Aurangzeb; Yamaguchi, Masafumi; Takamoto, Tatsuya

    2004-01-01

    A study of the performance of single-junction InGaP/GaAs and dual-junction InGaP/GaAs tandem cells under low concentration ratios (up to 15 suns), before and after 1 MeV electron irradiation is presented. Analysis of the tunnel junction parameters under different concentrated light illuminations reveals that the peak current (J P ) and valley current (J V ) densities should be greater than the short-circuit current density (J sc ) for better performance. The tunnel junction behavior against light intensity improved after irradiation. This led to the suggestion that the peak current density (J P ) and valley current density (J V ) of the tunnel junction were enhanced after irradiation or the peak current was shifted to higher concentration. The recovery of the radiation damage under concentrated light illumination conditions suggests that the performance of the InGaP/GaAs tandem solar cell can be enhanced even under low concentration ratios

  2. Single Molecule Nanoelectrochemistry in Electrical Junctions.

    Science.gov (United States)

    Nichols, Richard J; Higgins, Simon J

    2016-11-15

    It is now possible to reliably measure single molecule conductance in a wide variety of environments including organic liquids, ultrahigh vacuum, water, ionic liquids, and electrolytes. The most commonly used methods deploy scanning probe microscopes, mechanically formed break junctions, or lithographically formed nanogap contacts. Molecules are generally captured between a pair of facing electrodes, and the junction current response is measured as a function of bias voltage. Gating electrodes can also be added so that the electrostatic potential at the molecular bridge can be independently controlled by this third noncontacting electrode. This can also be achieved in an electrolytic environment using a four-electrode bipotentiostatic configuration, which allows independent electrode potential control of the two contacting electrodes. This is commonly realized using an electrochemical STM and enables single molecule electrical characterization as a function of electrode potential and redox state of the molecular bridge. This has emerged as a powerful tool in modern interfacial electrochemistry and nanoelectrochemistry for studying charge transport across single molecules as a function of electrode potential and the electrolytic environments. Such measurements are possible in electrolytes ranging from aqueous buffers to nonaqueous ionic liquids. In this Account, we illustrate a number of examples of single molecule electrical measurements under electrode potential control use a scanning tunneling microscope (STM) and demonstrate how these can help in the understanding of charge transport in single molecule junctions. Examples showing charge transport following phase coherent tunneling to incoherent charge hopping across redox active molecular bridges are shown. In the case of bipyridinium (or viologen) molecular wires, it is shown how electrochemical reduction leads to an increase of the single molecule conductance, which is controlled by the liquid electrochemical

  3. "a view of life" - 18.-30.9.2007 (Sisimiut Museum, Grønland)

    DEFF Research Database (Denmark)

    Medonos, Jakub Christensen

    2007-01-01

    Udstilling af og om unge i Sisimiut, Grønland. I Forbindelse med forskningsprojektet; "Ungdom og urbanitet i Grønland - en undersøgelse af den urbane ungdomskultur i Sisimiut: kompetencer, kreativitet og visioner." Se: www.workshop2007.wordpress.com  ......Udstilling af og om unge i Sisimiut, Grønland. I Forbindelse med forskningsprojektet; "Ungdom og urbanitet i Grønland - en undersøgelse af den urbane ungdomskultur i Sisimiut: kompetencer, kreativitet og visioner." Se: www.workshop2007.wordpress.com  ...

  4. Grøn Open Access i Praksis

    DEFF Research Database (Denmark)

    Open Access indikatoren påviste et uudnyttet potentiale på ca 60%, men hvorfor er der så ikke mere Open Access indhold?. I det konkrete arbejde med forskningsregistrering og registrering af post-prints støder bibliotekerne på en række udfordringer, som vanskeliggør institutionernes muligheder...... for at nå de nationale Open Access mål. Det er for eksempel inden for områderne rettigheder og licenser, tilladte Open Access versioner, embargoperioder m.m., at vi støder på problemer. Det er disse meget konkrete udfordringer, der arbejdes med i det kommende DEFF projekt ”Grøn Open Access i praksis”....

  5. CHAMAYOU, Grégoire. Teoria do drone.

    Directory of Open Access Journals (Sweden)

    Luiz Philipe de Caux

    2016-06-01

    Full Text Available É possível desvendar uma reconfiguração de normas e relações sociais e políticas, quiçá da própria estrutura dessas normas e relações, a partir da investigação da emergência de um artefato técnico? Tal é a questão de fundo que mobiliza o jovem filósofo francês Grégoire Chamayou, apresentado ao público brasileiro nesta bela edição da Cosac Naify, com competente tradução de Célia Euvaldo; questão que Chamayou ensaia res-ponder indo diretamente à coisa.

  6. Vibrationally coupled electron transport through single-molecule junctions

    Energy Technology Data Exchange (ETDEWEB)

    Haertle, Rainer

    2012-04-26

    Single-molecule junctions are among the smallest electric circuits. They consist of a molecule that is bound to a left and a right electrode. With such a molecular nanocontact, the flow of electrical currents through a single molecule can be studied and controlled. Experiments on single-molecule junctions show that a single molecule carries electrical currents that can even be in the microampere regime. Thereby, a number of transport phenomena have been observed, such as, for example, diode- or transistor-like behavior, negative differential resistance and conductance switching. An objective of this field, which is commonly referred to as molecular electronics, is to relate these transport phenomena to the properties of the molecule in the contact. To this end, theoretical model calculations are employed, which facilitate an understanding of the underlying transport processes and mechanisms. Thereby, one has to take into account that molecules are flexible structures, which respond to a change of their charge state by a profound reorganization of their geometrical structure or may even dissociate. It is thus important to understand the interrelation between the vibrational degrees of freedom of a singlemolecule junction and the electrical current flowing through the contact. In this thesis, we investigate vibrational effects in electron transport through singlemolecule junctions. For these studies, we calculate and analyze transport characteristics of both generic and first-principles based model systems of a molecular contact. To this end, we employ a master equation and a nonequilibrium Green's function approach. Both methods are suitable to describe this nonequilibrium transport problem and treat the interactions of the tunneling electrons on the molecular bridge non-perturbatively. This is particularly important with respect to the vibrational degrees of freedom, which may strongly interact with the tunneling electrons. We show in detail that the resulting

  7. A generic concept to overcome bandgap limitations for designing highly efficient multi-junction photovoltaic cells.

    Science.gov (United States)

    Guo, Fei; Li, Ning; Fecher, Frank W; Gasparini, Nicola; Ramirez Quiroz, Cesar Omar; Bronnbauer, Carina; Hou, Yi; Radmilović, Vuk V; Radmilović, Velimir R; Spiecker, Erdmann; Forberich, Karen; Brabec, Christoph J

    2015-07-16

    The multi-junction concept is the most relevant approach to overcome the Shockley-Queisser limit for single-junction photovoltaic cells. The record efficiencies of several types of solar technologies are held by series-connected tandem configurations. However, the stringent current-matching criterion presents primarily a material challenge and permanently requires developing and processing novel semiconductors with desired bandgaps and thicknesses. Here we report a generic concept to alleviate this limitation. By integrating series- and parallel-interconnections into a triple-junction configuration, we find significantly relaxed material selection and current-matching constraints. To illustrate the versatile applicability of the proposed triple-junction concept, organic and organic-inorganic hybrid triple-junction solar cells are constructed by printing methods. High fill factors up to 68% without resistive losses are achieved for both organic and hybrid triple-junction devices. Series/parallel triple-junction cells with organic, as well as perovskite-based subcells may become a key technology to further advance the efficiency roadmap of the existing photovoltaic technologies.

  8. Parametric interactions in high-Tc superconducting step edge junctions at X-band. [Y-Ba-Cu-O

    Energy Technology Data Exchange (ETDEWEB)

    Kain, A.Z. (TRW Space and Tech. Group, Redondo Beach, CA (United States)); Fetterman, H.R. (Electrical Engineering Dept., Univ. of California at Los Angeles (United States))

    1993-04-20

    We have fabricated and tested both single junctions and series arrays of YBCO step edge junctions for four photon parametric effects at X band as a first step in developing a parametric amplifier at 60 GHz. The series array of 25 junctions at 10.3 Ghz shows a 10 dB increase in reflected signal power as the pump power is increased, while the single junction at 12.2 GHz indicates a 2 dB change. The reflected power at the characteristic idler frequency of 2[omega][sub p]-[omega][sub s] is evidence of true Josephson junction parametric interaction. We are currently investigating the use of thallium based films at 60 GHz which offer a broader range of operating temperatures than does YBCO. Our design for a parametric amplifier at V band is a combination of microstrip based series arrays of junctions and an antipodal finline transition. (orig.)

  9. Effect of colored noise on an overdamped Josephson junction

    Science.gov (United States)

    Genchev, Z. D.

    2001-03-01

    In this paper my attention is restricted to stochastic differential equation in phase function φ(t), describing an overdamped Josephson junction. I accept the RSJ (resistively shunted junction) modeling, when the contact characterized by resistance R and critical current I c is under the action of a given direct current I and stochastic current source Ĩ(t) (=0) : {ℏ}/{2 eR }{dφ }/{dt }+I csinφ=I+ Ĩ(t). In our case the thermal noise is a Gaussian process and obeys the Johnson-Nyquistr correlation law C(t)== {ℏ}/{2πR}∫ -∞∞dω ω coth{ℏω}/{2k BT }cosωt. The effective Fokker-Planck equation is derived and the current-voltage characteristics (CVCs) of the Josephson junction are calculated for weakly colored noise. In the limit limℏ→0C(t)= {2k BT }/{R}δ(t) the well-known results for white noise are recovered.

  10. Observation of gap inhomogeneity in superconducting aluminum tunnel junctions

    International Nuclear Information System (INIS)

    Gilmartin, H.R.

    1982-01-01

    Experiments using a novel technique to investigate spatial variations in the superconducting gap parameter of aluminum films driven out of equilibrium by intense tunnel injection are described. The technique features fine spatial and energy resolution of the gap parameter. The experiments employed a finely focused laser spot scanned across the surface of a double tunnel junction sandwich to produce a very weak electrical signal that was analyzed to determine the gap parameter as a function of position in the plane of the device. Technical aspects of the problem are emphasized, since a new technique is presented. An elaborate explanation of the origin and analysis of the laser induced signal is given, as well as a detailed description of the experimental apparatus. Very briefly, the principle of operation is that a large flux of quasiparticles is injected through the lower junction of the sandwich into the middle aluminum film, and the upper junction serves to detect the effects of that injection. The middle film takes on two or more values of the gap parameter under injection, presumably indicating spatial variation. The presence of a small laser spot on a given point on the device perturbs the potential on the detector junction very slightly. That perturbation is measured as a function of bias current to determine the gap parameter of the middle film at that point. The spot is scanned in a raster pattern to produce a picture of the space dependence of the gap parameter

  11. The psychostimulant modafinil enhances gap junctional communication in cortical astrocytes.

    Science.gov (United States)

    Liu, Xinhe; Petit, Jean-Marie; Ezan, Pascal; Gyger, Joël; Magistretti, Pierre; Giaume, Christian

    2013-12-01

    Sleep-wake cycle is characterized by changes in neuronal network activity. However, for the last decade there is increasing evidence that neuroglial interaction may play a role in the modulation of sleep homeostasis and that astrocytes have a critical impact in this process. Interestingly, astrocytes are organized into communicating networks based on their high expression of connexins, which are the molecular constituents of gap junction channels. Thus, neuroglial interactions should also be considered as the result of the interplay between neuronal and astroglial networks. Here, we investigate the effect of modafinil, a wakefulness-promoting agent, on astrocyte gap junctional communication. We report that in the cortex modafinil injection increases the expression of mRNA and protein of connexin 30 but not those of connexin 43, the other major astroglial connexin. These increases are correlated with an enhancement of intercellular dye coupling in cortical astrocytes, which is abolished when neuronal activity is silenced by tetrodotoxin. Moreover, gamma-hydroxybutyric acid, which at a millimolar concentration induces sleep, has an opposite effect on astroglial gap junctions in an activity-independent manner. These results support the proposition that astroglia may play an important role in complex physiological brain functions, such as sleep regulation, and that neuroglial networking interaction is modified during sleep-wake cycle. This article is part of the Special Issue Section entitled 'Current Pharmacology of Gap Junction Channels and Hemichannels'. Copyright © 2013. Published by Elsevier Ltd.

  12. Geodynamical simulation of the RRF triple junction

    Science.gov (United States)

    Wang, Z.; Wei, D.; Liu, M.; Shi, Y.; Wang, S.

    2017-12-01

    Triple junction is the point at which three plate boundaries meet. Three plates at the triple junction form a complex geological tectonics, which is a natural laboratory to study the interactions of plates. This work studies a special triple junction, the oceanic transform fault intersects the collinear ridges with different-spreading rates, which is free of influence of ridge-transform faults and nearby hotspots. First, we build 3-D numerical model of this triple junction used to calculate the stead-state velocity and temperature fields resulting from advective and conductive heat transfer. We discuss in detail the influence of the velocity and temperature fields of the triple junction from viscosity, spreading rate of the ridge. The two sides of the oceanic transform fault are different sensitivities to the two factors. And, the influence of the velocity mainly occurs within 200km of the triple junction. Then, we modify the model by adding a ridge-transform fault to above model and directly use the velocity structure of the Macquarie triple junction. The simulation results show that the temperature at both sides of the oceanic transform fault decreases gradually from the triple junction, but the temperature difference between the two sides is a constant about 200°. And, there is little effect of upwelling velocity away from the triple junction 100km. The model results are compared with observational data. The heat flux and thermal topography along the oceanic transform fault of this model are consistent with the observed data of the Macquarie triple junction. The earthquakes are strike slip distributed along the oceanic transform fault. Their depths are also consistent with the zone of maximum shear stress. This work can help us to understand the interactions of plates of triple junctions and help us with the foundation for the future study of triple junctions.

  13. Hysteresis development in superconducting Josephson junctions

    International Nuclear Information System (INIS)

    Refai, T.F.; Shehata, L.N.

    1988-09-01

    The resistively and capacitive shunted junction model is used to investigate hysteresis development in superconducting Josephson junctions. Two empirical formulas that relate the hysteresis width and the quasi-particle diffusion length in terms of the junctions electrical parameters, temperature and frequency are obtained. The obtained formulas provide a simple tool to investigate the full potentials of the hysteresis phenomena. (author). 9 refs, 3 figs

  14. Põhjamaade kultuurikeskus Nuuk`is Gröönimaal = Pohjoismainen kulttuurikekus, Nuuk, Grönlanti / Mikko Heikkinen, Markku Komonen

    Index Scriptorium Estoniae

    Heikkinen, Mikko

    1993-01-01

    Põhjamaade kultuurikeskuse ehitamiseks Gröönimaale Nuuḱi linna korraldati 1993.a. rahvusvaheline arhitektuurikonkurss. Artiklis on tutvustatud soome arhitektide Mikko Heikkineni ja Markku Komoneni võistlustööd

  15. Dispersion Mechanisms of a Tidal River Junction in the Sacramento–San Joaquin Delta, California

    Directory of Open Access Journals (Sweden)

    Karla T. Gleichauf

    2014-12-01

    Full Text Available doi: http://dx.doi.org/10.15447/sfews.2014v12iss4art1In branching channel networks, such as in the Sacramento–San Joaquin River Delta, junction flow dynamics contribute to dispersion of ecologically important entities such as fish, pollutants, nutrients, salt, sediment, and phytoplankton. Flow transport through a junction largely arises from velocity phasing in the form of divergent flow between junction channels for a portion of the tidal cycle. Field observations in the Georgiana Slough junction, which is composed of the North and South Mokelumne rivers, Georgiana Slough, and the Mokelumne River, show that flow phasing differences between these rivers arise from operational, riverine, and tidal forcing. A combination of Acoustic Doppler Current Profile (ADCP boat transecting and moored ADCPs over a spring–neap tidal cycle (May to  June 2012 monitored the variability of spatial and temporal velocity, respectively. Two complementary drifter studies enabled assessment of local transport through the junction to identify small-scale intrajunction dynamics. We supplemented field results with numerical simulations using the SUNTANS model to demonstrate the importance of phasing offsets for junction transport and dispersion. Different phasing of inflows to the junction resulted in scalar patchiness that is characteristic of MacVean and Stacey’s (2011 advective tidal trapping. Furthermore, we observed small-scale junction flow features including a recirculation zone and shear layer, which play an important role in intra-junction mixing over time scales shorter than the tidal cycle (i.e., super-tidal time scales. The study period spanned open- and closed-gate operations at the Delta Cross Channel. Synthesis of field observations and modeling efforts suggest that management operations related to the Delta Cross Channel can strongly affect transport in the Delta by modifying the relative contributions of tidal and riverine flows, thereby

  16. Fluxon dynamics in long Josephson junctions in the presence of a temperature gradient or spatial nonuniformity

    DEFF Research Database (Denmark)

    Krasnov, V.M.; Oboznov, V.A.; Pedersen, Niels Falsig

    1997-01-01

    Fluxon dynamics in nonuniform Josephson junctions was studied both experimentally and theoretically. Two types of nonuniform junctions were considered: the first type had a nonuniform spatial distribution of critical and bias currents and the second had a temperature gradient applied along...... the junction. An analytical expression for the I-V curve in the presence of a temperature gradient or spatial nonuniformity was derived. It was shown that there is no static thermomagnetic Nernst effect due to Josephson fluxon motion despite the existence of a force pushing fluxons in the direction of smaller...

  17. Thermally activated phase slippage in high-Tc grain-boundary Josephson junctions

    International Nuclear Information System (INIS)

    Gross, R.; Chaudhari, P.; Dimos, D.; Gupta, A.; Koren, G.

    1990-01-01

    The effect of thermally activated phase slippage (TAPS) in YBa 2 Cu 3 O 7 grain-boundary Josephson junctions has been studied. TAPS has been found to be responsible for the dc noise voltage superimposed on the dc Josephson current near the transition temperature. Because of the reduced Josephson coupling energy of the grain-boundary junctions, which is caused by a reduced superconducting order parameter at the grain-boundary interface, TAPS is present over a considerable temperature range. The implications of TAPS on the applicability of high-T c Josephson junctions are outlined

  18. Thermally activated phase slippage in high- T sub c grain-boundary Josephson junctions

    Energy Technology Data Exchange (ETDEWEB)

    Gross, R.; Chaudhari, P.; Dimos, D.; Gupta, A.; Koren, G. (IBM Thomas J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598 (USA))

    1990-01-08

    The effect of thermally activated phase slippage (TAPS) in YBa{sub 2}Cu{sub 3}O{sub 7} grain-boundary Josephson junctions has been studied. TAPS has been found to be responsible for the dc noise voltage superimposed on the dc Josephson current near the transition temperature. Because of the reduced Josephson coupling energy of the grain-boundary junctions, which is caused by a reduced superconducting order parameter at the grain-boundary interface, TAPS is present over a considerable temperature range. The implications of TAPS on the applicability of high-{ital T}{sub {ital c}} Josephson junctions are outlined.

  19. Radiation detection with Nb/Al-AlOx/Al/Nb superconducting tunnel junctions

    International Nuclear Information System (INIS)

    Matsumura, Atsuki; Takahashi, Toru; Kurakado, Masahiko

    1992-01-01

    Superconductor radiation detectors have the possibility of 20-30 times better energy resolution than that of a high resolution Si detector. We fabricated Nb/Al-AlOx/Al/Nb superconducting tunnel junctions with low leakage current. X rays were detected with large area junctions of 178x178 μm 2 . High energy resolution of 160 eV for 5.9 keV was obtained. We also fabricated series connected junctions which covers a rather large area of 4x4 mm 2 . α particles injected into the rear substrate were detected using nonthermal phonons induced by the radiations in the substrate. (author)

  20. Fine structures on zero-field steps in low-loss Josephson tunnel junctions

    DEFF Research Database (Denmark)

    Monaco, Roberto; Barbara, Paola; Mygind, Jesper

    1993-01-01

    The first zero-field step in the current-voltage characteristic of intermediate-length, high-quality, low-loss Nb/Al-AlOx/Nb Josephson tunnel junctions has been carefully investigated as a function of temperature. When decreasing the temperature, a number of structures develop in the form...... of regular and slightly hysteretic steps whose voltage position depends on the junction temperature and length. This phenomenon is interesting for the study of nonlinear dynamics and for application of long Josephson tunnel junctions as microwave and millimeter-wavelength oscillators....

  1. Experimental Evidence for Quantum Interference and Vibrationally Induced Decoherence in Single-Molecule Junctions

    Science.gov (United States)

    Ballmann, Stefan; Härtle, Rainer; Coto, Pedro B.; Elbing, Mark; Mayor, Marcel; Bryce, Martin R.; Thoss, Michael; Weber, Heiko B.

    2012-08-01

    We analyze quantum interference and decoherence effects in single-molecule junctions both experimentally and theoretically by means of the mechanically controlled break junction technique and density-functional theory. We consider the case where interference is provided by overlapping quasidegenerate states. Decoherence mechanisms arising from electronic-vibrational coupling strongly affect the electrical current flowing through a single-molecule contact and can be controlled by temperature variation. Our findings underline the universal relevance of vibrations for understanding charge transport through molecular junctions.

  2. Directly coupled direct current superconducting quantum interference device magnetometers based on ramp-edge Ag:YBa2Cu3O7-x/PrBa2Cu3O7-x/Ag:YBa2Cu3O7-x junctions

    International Nuclear Information System (INIS)

    Jia, Q.X.; Yan, F.; Mombourquette, C.; Reagor, D.

    1998-01-01

    Directly coupled dc superconducting quantum interference device (SQUID) magnetometers on LaAlO 3 substrates were fabricated using ramp-edge superconductor/normal-metal/superconductor junctions, where Ag-doped YBa 2 Cu 3 O 7-x was used for the electrode and PrBa 2 Cu 3 O 7-x for the normal-metal barrier. A flux noise of 8x10 -6 Φ 0 Hz -1/2 at 10 kHz measured with a dc bias current was achieved at 75 K, which corresponded to a field sensitivity of 400fTHz -1/2 for a magnetometer with a pick-up loop area of 8.5mmx7.5mm. Most significantly, the noise floor increased at lower frequencies with a frequency dependence slightly less than 1/f. The field noise of the SQUID magnetometers increased by only 25% after cycling the devices from zero field to 500 mG. In a static earth close-quote s magnetic field background, the field noise of the SQUID magnetometers increased by less than a factor of 2. copyright 1998 American Institute of Physics

  3. Loss models for long Josephson junctions

    DEFF Research Database (Denmark)

    Olsen, O. H.; Samuelsen, Mogens Rugholm

    1984-01-01

    A general model for loss mechanisms in long Josephson junctions is presented. An expression for the zero-field step is found for a junction of overlap type by means of a perturbation method. Comparison between analytic solution and perturbation result shows good agreement.......A general model for loss mechanisms in long Josephson junctions is presented. An expression for the zero-field step is found for a junction of overlap type by means of a perturbation method. Comparison between analytic solution and perturbation result shows good agreement....

  4. Superconducting flux qubits with π-junctions

    International Nuclear Information System (INIS)

    Shcherbakova, Anastasia

    2014-01-01

    In this thesis, we present a fabrication technology of Al/AlO x /Al Josephson junctions on Nb pads. The described technology gives the possibility of combining a variety of Nb-based superconducting circuits, like pi-junction phase-shifters with sub-micron Al/AlO x /Al junctions. Using this approach, we fabricated hybrid Nb/Al flux qubits with and without the SFS-junctions and studied dispersive magnetic field response of these qubits as well as their spectroscopy characteristics.

  5. Doubled Shapiro steps in a topological Josephson junction

    Science.gov (United States)

    Li, Yu-Hang; Song, Juntao; Liu, Jie; Jiang, Hua; Sun, Qing-Feng; Xie, X. C.

    2018-01-01

    We study the transport properties of a superconductor-quantum spin Hall insulator-superconductor hybrid system in the presence of microwave radiation. Instead of adiabatic analysis or use of the resistively shunted junction model, we start from the microscopic Hamiltonian and calculate the d.c. current directly with the help of the nonequilibrium Green's function method. The numerical results show that (i) the I-V curves of background current due to multiple Andreev reflections exhibit a different structure from those in the conventional junctions, and (ii) all Shapiro steps are visible and appear one by one at high frequencies, while at low frequencies, the steps evolve exactly as the Bessel functions and the odd steps are completely suppressed, implying a fractional Josephson effect.

  6. Liquid phase epitaxy of abrupt junctions in InAs and studies of injection radiative tunneling processes

    International Nuclear Information System (INIS)

    Bull, D.J.

    1977-01-01

    The p-n junction in a InAs crystal, by liquid phase epitaxy is obtained. The processes of injection and tunneling radiative recombination by emitted radiation from active region of p-n junction for low injection current are studied. (M.C.K.) [pt

  7. Millimeter-wave response and linewidth of Josephson oscillations in YBa2Cu3O7 step-edge junctions

    DEFF Research Database (Denmark)

    Divin, Yu. Ya.; Andreev, A. V.; Fischer, Gerd Michael

    1993-01-01

    by thermal fluctuations at liquid nitrogen temperatures. At lower temperatures the observed linewidth increases indicating that low-frequency fluctuations become dominant in the junction as the temperature is reduced. Due to an inhomogeneous spatial distribution of the current the step-edge junction might...

  8. Fabrication of Schottky Junction Between Au and SrTiO3

    Science.gov (United States)

    Inoue, Akira; Izumisawa, Kei; Uwe, Hiromoto

    2001-05-01

    A Schottky junction with a high rectification ratio between Au and La-doped SrTiO3 has been fabricated using a simple surface treatment. Highly La-doped (5%) SrTiO3 single crystals are annealed in O2 atmosphere at about 1000°C for 1 h and etched in HNO3 for more than five min. The HNO3 etching is performed in a globe box containing N2 to prevent pollution from the air. After the treatment, Au is deposited on the SrTiO3 surface in a vacuum (˜ 10-7 Torr) with an e-gun evaporator. The current voltage characteristics of the junction have shown excellent rectification properties, although junctions using neither annealed nor etched SrTiO3 exhibit high leak current in reverse voltage. The rectification ratio of the junction at 1 V is more than six orders of magnitude and there is no hysteresis in the current voltage spectra. The logarithm of the current is linear with the forward bias voltage. The ideal factor of the junction is estimated to be about 1.68. These results suggest that, if prevented from being pollution by the air, a good Schottky junction can be obtained by easy processes such as annealing in oxygen atmosphere and surface etching with acid.

  9. Low temperature properties of spin filter NbN/GdN/NbN Josephson junctions

    Energy Technology Data Exchange (ETDEWEB)

    Massarotti, D., E-mail: dmassarotti@na.infn.it [Dipartimento di Ingegneria Industriale e dell’Informazione, Seconda Università di Napoli, via Roma 29, 81031 Aversa (CE) (Italy); CNR-SPIN UOS Napoli, Complesso Universitario di Monte Sant’Angelo, via Cinthia, 80126 Napoli (Italy); Caruso, R. [Dipartimento di Fisica, Università degli Studi di Napoli Federico II, Via Cinthia, 80126 Napoli (Italy); CNR-SPIN UOS Napoli, Complesso Universitario di Monte Sant’Angelo, via Cinthia, 80126 Napoli (Italy); Pal, A. [Department of Materials Science and Metallurgy, University of Cambridge, Cambridge CB3 0FS (United Kingdom); Rotoli, G. [Dipartimento di Ingegneria Industriale e dell’Informazione, Seconda Università di Napoli, via Roma 29, 81031 Aversa (CE) (Italy); Longobardi, L. [Dipartimento di Ingegneria Industriale e dell’Informazione, Seconda Università di Napoli, via Roma 29, 81031 Aversa (CE) (Italy); American Physical Society, 1 Research Road, Ridge, New York 11961 (United States); Pepe, G.P. [Dipartimento di Fisica, Università degli Studi di Napoli Federico II, Via Cinthia, 80126 Napoli (Italy); CNR-SPIN UOS Napoli, Complesso Universitario di Monte Sant’Angelo, via Cinthia, 80126 Napoli (Italy); Blamire, M.G. [Department of Materials Science and Metallurgy, University of Cambridge, Cambridge CB3 0FS (United Kingdom); Tafuri, F. [Dipartimento di Ingegneria Industriale e dell’Informazione, Seconda Università di Napoli, via Roma 29, 81031 Aversa (CE) (Italy); CNR-SPIN UOS Napoli, Complesso Universitario di Monte Sant’Angelo, via Cinthia, 80126 Napoli (Italy)

    2017-02-15

    Highlights: • We study the phase dynamics of ferromagnetic NbN/GdN/NbN Josephson junctions. • The ferromagnetic insulator GdN barrier generates spin-filtering properties. • Spin filter junctions fall in the underdamped regime. • MQT occurs with the same phenomenology as in conventional Josephson junctions. • Dissipation is studied in a wide range of critical current density values. - Abstract: A ferromagnetic Josephson junction (JJ) represents a special class of hybrid system where different ordered phases meet and generate novel physics. In this work we report on the transport measurements of underdamped ferromagnetic NbN/GdN/NbN JJs at low temperatures. In these junctions the ferromagnetic insulator gadolinium nitride barrier generates spin-filtering properties and a dominant second harmonic component in the current-phase relation. These features make spin filter junctions quite interesting also in terms of fundamental studies on phase dynamics and dissipation. We discuss the fingerprints of spin filter JJs, through complementary transport measurements, and their implications on the phase dynamics, through standard measurements of switching current distributions. NbN/GdN/NbN JJs, where spin filter properties can be controllably tuned along with the critical current density (J{sub c}), turn to be a very relevant term of reference to understand phase dynamics and dissipation in an enlarged class of JJs, not necessarily falling in the standard tunnel limit characterized by low J{sub c} values.

  10. Device characterization for design optimization of 4 junction inverted metamorphic concentrator solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Geisz, John F.; France, Ryan M.; Steiner, Myles A.; Friedman, Daniel J. [National Renewable Energy Laboratory, Golden, CO 80401 (United States); García, Iván [National Renewable Energy Laboratory, Golden, CO 80401 USA and Instituto de Energía Solar, Universidad Politécnica de Madrid, Avda Complutense s/n, 28040 Madrid (Spain)

    2014-09-26

    Quantitative electroluminescence (EL) and luminescent coupling (LC) analysis, along with more conventional characterization techniques, are combined to completely characterize the subcell JV curves within a fourjunction (4J) inverted metamorphic solar cell (IMM). The 4J performance under arbitrary spectral conditions can be predicted from these subcell JV curves. The internal radiative efficiency (IRE) of each junction has been determined as a function of current density from the external radiative efficiency using optical modeling, but this required the accurate determination of the individual junction current densities during the EL measurement as affected by LC. These measurement and analysis techniques can be applied to any multijunction solar cell. The 4J IMM solar cell used to illustrate these techniques showed excellent junction quality as exhibited by high IRE and a one-sun AM1.5D efficiency of 36.3%. This device operates up to 1000 suns without limitations due to any of the three tunnel junctions.

  11. Response of thick-film bridge junction of high-Tc YBCO to nuclear radiation

    International Nuclear Information System (INIS)

    Ding Honglin; Wang Jun; Zhang Wanchang

    1992-01-01

    The response of thick-film Josephson junction based on high-T c YBCO to nuclear radiation is described. The lengths of the junction are 2000 μm, 1000 μm, and 500 μm and the widths are 500 μm, 300 μm and 100 μm. When the junction is irradiated by low energy γ-ray of 59.5 KeV from 241 Am at temperature of 77 K and the transport current I b is more than I c , the authors obtained the reduction of 1.6 mA of critical current and volt-signal as high as 17 μV without amplifier. It has been noted that the signal amplitude is related to the distance between the junction and the radiation source. Finally the advantages and shortcomings of detector based on thick films of high T c YBCO are discussed in the paper

  12. Adsorbate-driven cooling of carbene-based molecular junctions

    Czech Academy of Sciences Publication Activity Database

    Foti, Giuseppe; Vázquez, Héctor

    2017-01-01

    Roč. 8, Oct (2017), s. 2060-2068 ISSN 2190-4286 R&D Projects: GA ČR GA15-19672S EU Projects: European Commission(XE) 702114 - HEATEXMOL Institutional support: RVO:68378271 Keywords : adsorbate * carbene * current-induced heating and cooling * molecular junction * vibrations Subject RIV: BM - Solid Matter Physics ; Magnetism OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.) Impact factor: 3.127, year: 2016

  13. Multiple frequency generation by bunched solitons in Josephson tunnel junctions

    DEFF Research Database (Denmark)

    Lomdahl, P. S.; Sørensen, O. H.; Christiansen, Peter Leth

    1981-01-01

    A detailed numerical study of a long Josephson tunnel junction modeled by a perturbed sine-Gordon equation demonstrates the existence of a variety of bunched soliton configurations. Thus, on the third zero-field step of the V-I characteristic, two simultaneous adjacent frequencies are generated...... in a narrow bias current range. The analysis of the soliton modes provides an explanation of recent experimental observations....

  14. Making Growth Work for Women in Low-income Countries (GrOW ...

    International Development Research Centre (IDRC) Digital Library (Canada)

    This project is part of the Growth and Economic Opportunities for Women (GrOW) program. GrOW is a five-year, multi-funder partnership with the UK's Department for International Development (DFID), The William ... In addition to 10 projects addressing the barriers to women's economic ... Careers · Contact Us · Site map.

  15. Grænser forudsætter, at man vil bruge magt

    DEFF Research Database (Denmark)

    Østergaard, Uffe

    2016-01-01

    Historisk set. Fra Hadrians mur til de lyseblå gendarmer ved den dansk-tyske grænse: en historie om magt.......Historisk set. Fra Hadrians mur til de lyseblå gendarmer ved den dansk-tyske grænse: en historie om magt....

  16. Gröbner bases in control theory and signal processing

    CERN Document Server

    Regensburger, Georg

    2007-01-01

    This volume contains survey and original articles presenting the state of the art on the application of Gröbner bases in control theory and signal processing. The contributions are based on talks delivered at the Special Semester on Gröbner Bases and Related Methods at the Johann Radon Institute of Computational and Applied Mathematics (RICAM), Linz, Austria, in May 2006.

  17. Tunneling junction as an open system. Normal tunneling

    International Nuclear Information System (INIS)

    Ono, Y.

    1978-01-01

    The method of the tunneling Hamiltonian is reformulated in the case of normal tunneling by introducing two independent particle baths. Due to the baths, it becomes possible to realize a final stationary state where the electron numbers of the two electrodes in the tunneling system are maintained constant and where there exists a stationary current. The effect of the bath-system couplings on the current-voltage characteristics of the junction is discussed in relation to the usual expression of the current as a function of voltage. (Auth.)

  18. Current–voltage characteristics of manganite–titanite perovskite junctions

    Directory of Open Access Journals (Sweden)

    Benedikt Ifland

    2015-07-01

    Full Text Available After a general introduction into the Shockley theory of current voltage (J–V characteristics of inorganic and organic semiconductor junctions of different bandwidth, we apply the Shockley theory-based, one diode model to a new type of perovskite junctions with polaronic charge carriers. In particular, we studied manganite–titanate p–n heterojunctions made of n-doped SrTi1−yNbyO3, y = 0.002 and p-doped Pr1−xCaxMnO3, x = 0.34 having a strongly correlated electron system. The diffusion length of the polaron carriers was analyzed by electron beam-induced current (EBIC in a thin cross plane lamella of the junction. In the J–V characteristics, the polaronic nature of the charge carriers is exhibited mainly by the temperature dependence of the microscopic parameters, such as the hopping mobility of the series resistance and a colossal electro-resistance (CER effect in the parallel resistance. We conclude that a modification of the Shockley equation incorporating voltage-dependent microscopic polaron parameters is required. Specifically, the voltage dependence of the reverse saturation current density is analyzed and interpreted as a voltage-dependent electron–polaron hole–polaron pair generation and separation at the interface.

  19. Inhomogeneity in barrier height at graphene/Si (GaAs) Schottky junctions

    OpenAIRE

    Tomer, D.; Rajput, S.; Hudy, L. J.; Li, C. H.; Li, L.

    2015-01-01

    Graphene interfaced with a semiconductor forms a Schottky junction with rectifying properties, however, fluctuations in the Schottky barrier height are often observed. In this work, Schottky junctions are fabricated by transferring chemical vapor deposited monolayer graphene onto n-type Si and GaAs substrates. Temperature dependence of the barrier height and ideality factor are obtained by current-voltage measurements between 215 and 350 K. An increase in the zero bias barrier height and decr...

  20. Negative Differential Resistance due to Nonlinearities in Single and Stacked Josephson Junctions

    DEFF Research Database (Denmark)

    Filatrella, Giovanni; Pierro, Vincenzo; Pedersen, Niels Falsig

    2014-01-01

    Josephson junction systems with a negative differential resistance (NDR) play an essential role for applications. As a well-known example, long Josephson junctions of the BSCCO type have been considered as a source of terahertz radiation in recent experiments. Numerical results for the dynamics...... shapes of NDR region are considered, and we found that it is essential to distinguish between current bias and voltage bias....

  1. Modeling and simulation of a dual-junction CIGS solar cell using Silvaco ATLAS

    OpenAIRE

    Fotis, Konstantinos

    2012-01-01

    Approved for public release; distribution is unlimited. The potential of designing a dual-junction Copper Indium Gallium Selenide (CIGS) photovoltaic cell is investigated in this thesis. Research into implementing a dual-junction solar cell, using a CIGS bottom cell and different thin-film designs as a top cell, was conducted in order to increase the current record efficiency of 20.3% for a single CIGS cell. This was accomplished through modeling and simulation using Silvaco ATLASTM, an ad...

  2. Studies of chaos and thermal noise in a driven Josephson junction using an electronic analog

    International Nuclear Information System (INIS)

    Pegrum, C.M.; Gurney, W.S.C.; Nisbet, R.M.

    1989-01-01

    Using an electronic analog of a resistively shunted driven Josephson junction, the authors have demonstrated a number of effects, including the appearance of a devil's staircase in the current-voltage characteristic, the onset of chaos, and the effect of noise on these phenomena. The authors stress that the analog is simple, but models the junction behavior with a high degree of accuracy and detail

  3. Insulator-protected mechanically controlled break junctions for measuring single-molecule conductance in aqueous environments

    OpenAIRE

    Muthusubramanian, N.; Galan, E.; Maity, C.; Eelkema, R.; Grozema, F.C.; van der Zant, H.S.J.

    2016-01-01

    We present a method to fabricate insulated gold mechanically controlled break junctions (MCBJ) by coating the metal with a thin layer of aluminum oxide using plasma enhanced atomic layer deposition. The Al2O3 thickness deposited on the MCBJ devices was varied from 2 to 15 nm to test the suppression of leakage currents in deionized water and phosphate buffered saline. Junctions coated with a 15 nm thick oxide layer yielded atomically sharp electrodes and negligible conductance counts in the ra...

  4. Phase Sensitive Measurements of Ferromagnetic Josephson Junctions for Cryogenic Memory Applications

    Science.gov (United States)

    Niedzielski, Bethany Maria

    A Josephson junction is made up of two superconducting layers separated by a barrier. The original Josephson junctions, studied in the early 1960's, contained an insulating barrier. Soon thereafter, junctions with normal-metal barriers were also studied. Ferromagnetic materials were not even theoretically considered as a barrier layer until around 1980, due to the competing order between ferromagnetic and superconducting systems. However, many exciting physical phenomena arise in hybrid superconductor/ferromagnetic devices, including devices where the ground state phase difference between the two superconductors is shifted by pi. Since their experimental debut in 2001, so-called pi junctions have been demonstrated by many groups, including my own, in systems with a single ferromagnetic layer. In this type of system, the phase of the junction can be set to either 0 or pi depending on the thickness of the ferromagnetic layer. Of interest, however, is the ability to control the phase of a single junction between the 0 and pi states. This was theoretically shown to be possible in a system containing two ferromagnetic layers (spin-valve junctions). If the materials and their thicknesses are properly chosen to manipulate the electron pair correlation function, then the phase state of a spin-valve Josephson junction should be capable of switching between the 0 and ? phase states when the magnetization directions of the two ferromagnetic layers are oriented in the antiparallel and parallel configurations, respectively. Such a phase-controllable junction would have immediate applications in cryogenic memory, which is a necessary component to an ultra-low power superconducting computer. A fully superconducting computer is estimated to be orders of magnitude more energy-efficient than current semiconductor-based supercomputers. The goal of this work was to experimentally verify this prediction for a phase-controllable ferromagnetic Josephson junction. To address this

  5. Internal differential collision attacks on the reduced-round Grøstl-0 hash function

    DEFF Research Database (Denmark)

    Ideguchi, Kota; Tischhauser, Elmar Wolfgang; Preneel, Bart

    2014-01-01

    . This results in collision attacks and semi-free-start collision attacks on the Grøstl-0 hash function and compression function with reduced rounds. Specifically, we show collision attacks on the Grøstl-0-256 hash function reduced to 5 and 6 out of 10 rounds with time complexities 248 and 2112 and on the Grøstl......-0-512 hash function reduced to 6 out of 14 rounds with time complexity 2183. Furthermore, we demonstrate semi-free-start collision attacks on the Grøstl-0-256 compression function reduced to 8 rounds and the Grøstl-0-512 compression function reduced to 9 rounds. Finally, we show improved...

  6. On the Computation of Comprehensive Boolean Gröbner Bases

    Science.gov (United States)

    Inoue, Shutaro

    We show that a comprehensive Boolean Gröbner basis of an ideal I in a Boolean polynomial ring B (bar A,bar X) with main variables bar X and parameters bar A can be obtained by simply computing a usual Boolean Gröbner basis of I regarding both bar X and bar A as variables with a certain block term order such that bar X ≫ bar A. The result together with a fact that a finite Boolean ring is isomorphic to a direct product of the Galois field mathbb{GF}_2 enables us to compute a comprehensive Boolean Gröbner basis by only computing corresponding Gröbner bases in a polynomial ring over mathbb{GF}_2. Our implementation in a computer algebra system Risa/Asir shows that our method is extremely efficient comparing with existing computation algorithms of comprehensive Boolean Gröbner bases.

  7. Superconductor-Insulator transition in a single Josephson junction

    International Nuclear Information System (INIS)

    Sonin, E.B.; PenttilA, J.S.; Parts, O.; Hakonen, P.J.; Paalanen, M.A.

    1999-01-01

    For ultra small Josephson junctions, when quantum effects become important, dissipative phase transition (DPT) has been predicted. The physical origin of this transition is the suppression of macroscopic quantum tunneling of the phase by tile interaction with dissipative quantum-mechanical environment. Macroscopic quantum tunneling destroys superconductivity of a junction, whereas suppression of tunneling restores superconductivity. Hence, this transition is often called a superconductor-insulator transition (SIT). SIT was predicted for various systems, but its detection in a single Josephson junction is of principal importance since it is the simplest system where this transition is expected, without any risk of being masked by other physical processes, as is possible in more complicated systems like regular or' random Josephson junction arrays. In this Letter we present results of our measurements on R = dV/dI vs. I curves, for a variety of single small isolated Josephson junctions, shunted and un shunted, with different values of capacitance C and normal state tunneling resistance RT. We have detected a crossover. between two types of RI-curves with an essentially different behavior at small currents. On the basis of this crossover, we are able to map out the whole phase diagram for a Josephson junction. The position of the observed phase boundary did not agree with that expected from the original theory. However, the theory revised to take into account a finite accuracy of our voltage measurements (viz., the minimum voltage which we are able to detect), explains well the observed phase diagram. Our important conclusion is that the concept of dissipative phase transition (DPT) and superconductor-insulator transition (SIT) are not completely identical as assumed before. Both are accompanied by the sign change of the thermo resistance, which is traditionally considered as a signature of SIT. Thus any DPT is SIT, but not vice versa. We argue that the real signature

  8. Performance comparison between p–i–n and p–n junction tunneling field-effect transistors

    Science.gov (United States)

    Yoon, Young Jun; Seo, Jae Hwa; Kang, In Man

    2018-06-01

    In this study, we investigated the direct-current (DC) and radio-frequency (RF) performances of p–i–n and p–n junction tunneling field-effect transistors (TFETs). Compared to the p–i–n junction TFET, the p–n junction TFET exhibited higher on-state current (I on) because the channel formation mechanism of the p–n junction TFET resulted in a narrower tunneling barrier and an expanded tunneling area. Further, the reduction of I on of the p–n junction TFET by the interface trap was smaller. Moreover, the p–n junction TFET exhibited lower gate-to-drain capacitance (C gd) because a depletion capacitance (C gd,dep) was formed by the depletion region under gate dielectric. Consequently, the p–n junction TFET achieved an improvement of cut-off frequency (f T) and intrinsic delay time (τ), which are related to the current performance and total gate capacitance (C gg). We confirmed the enhancement of device performances in terms of I on, f T, and τ by the conduction mechanism of the p–n junction TFET.

  9. Linker-dependent Junction Formation Probability in Single-Molecule Junctions

    Energy Technology Data Exchange (ETDEWEB)

    Yoo, Pil Sun; Kim, Taekyeong [HankukUniversity of Foreign Studies, Yongin (Korea, Republic of)

    2015-01-15

    We compare the junction formation probabilities of single-molecule junctions with different linker molecules by using a scanning tunneling microscope-based break-junction technique. We found that the junction formation probability varies as SH > SMe > NH2 for the benzene backbone molecule with different types of anchoring groups, through quantitative statistical analysis. These results are attributed to different bonding forces according to the linker groups formed with Au atoms in the electrodes, which is consistent with previous works. Our work allows a better understanding of the contact chemistry in the metal.molecule junction for future molecular electronic devices.

  10. Dynamics of fractional vortices in long Josephson junctions; Dynamik fraktionaler Flusswirbel in langen Josephsonkontakten

    Energy Technology Data Exchange (ETDEWEB)

    Gaber, Tobias

    2007-07-01

    In this thesis static and dynamic properties of fractional vortices in long Josephson junctions are investigated. Fractional vortices are circulating supercurrents similar to the well-known Josephson fluxons. Yet, they show the distinguishing property of carrying only a fraction of the magnetic flux quantum. Fractional vortices are interesting non-linear objects. They spontaneously appear and are pinned at the phase discontinuity points of so called 0-{kappa} junctions but can be bend or flipped by external forces like bias currents or magnetic fields. 0-{kappa} junctions and fractional vortices are generalizations of the well-known 0-{pi} junctions and semifluxons, where not only phase jumps of pi but arbitrary values denoted by kappa are considered. By using so-called artificial 0-{kappa} junctions that are based on standard Nb-AlO{sub x}-Nb technology the classical dynamics of fractional vortices has been investigated experimentally for the very first time. Here, half-integer zero field steps could be observed. These voltage steps on the junction's current-voltage characteristics correspond to the periodic flipping/hopping of fractional vortices. In addition, the oscillatory eigenmodes of fractional vortices were investigated. In contrast to fluxons fractional vortices have an oscillatory eigenmode with a frequency within the plasma gap. Using resonance spectroscopy the dependence of the eigenmode frequency on the flux carried by the vortex and an applied bias current was determined. (orig.)

  11. Macroscopic quantum tunnelling in a current biased Josephson junction

    International Nuclear Information System (INIS)

    Martinis, J.M.; Devoret, M.H.; Clarke, J.; Urbina, C.

    1984-11-01

    We discuss in this work an attempt to answer experimentally the question: do macroscopic variables obey quantum mechanics. More precisely, this experiment deals with the question of quantum-mechanical tunnelling of a macroscopic variable, a subject related to the famous Schrodinger's cat problem in the theory of measurement

  12. Reliability of twin-dependent triple junction distributions measured from a section plane

    International Nuclear Information System (INIS)

    Hardy, Graden B.; Field, David P.

    2016-01-01

    Numerous studies indicate polycrystalline triple junctions are independent microstructural features with distinct properties from their constituent grain boundaries. Despite the influence of triple junctions on material properties, it is impractical to characterize triple junctions on a large scale using current three-dimensional methods. This work demonstrates the ability to characterize twin-dependent triple junction distributions from a section plane by adopting a grain boundary plane stereology. The technique is validated through simulated distributions and simulated electron back-scatter diffraction (EBSD) data. Measures of validation and convergence are adopted to demonstrate the quantitative reliability of the technique as well as the convergence behavior of twin-dependent triple junction distributions. This technique expands the characterization power of EBSD and prepares the way for characterizing general triple junction distributions from a section plane. - Graphical abstract: The distribution of planes forming a triple junction with a given twin boundary is shown partially in the stereographic projections below from a given projection. The plot on the left shows the ideal/measured distribution and the plot on the right shows the distribution obtained from the stereological method presented here.

  13. Functional anatomy of the human ureterovesical junction

    NARCIS (Netherlands)

    Roshani, H.; Dabhoiwala, N. F.; Verbeek, F. J.; Lamers, W. H.

    1996-01-01

    BACKGROUND: The valve function of the ureterovesical-junction (UVJ) is responsible for protection of the low pressure upper urinary tract from the refluxing of urine from the bladder. Controversy about the microanatomy of the human ureterovesical-junction persists. METHODS: Ten (3 male and 7 female)

  14. Spin, Vibrations and Radiation in Superconducting Junctions

    NARCIS (Netherlands)

    Padurariu, C.

    2013-01-01

    This thesis presents the theoretical study of superconducting transport in several devices based on superconducting junctions. The important feature of these devices is that the transport properties of the junction are modified by the interaction with another physical system integrated in the

  15. Gap junctions and connexin-interacting proteins

    NARCIS (Netherlands)

    Giepmans, Ben N G

    2004-01-01

    Gap junctions form channels between adjacent cells. The core proteins of these channels are the connexins. Regulation of gap junction communication (GJC) can be modulated by connexin-associating proteins, such as regulatory protein phosphatases and protein kinases, of which c-Src is the

  16. Multiplication in Silicon p-n Junctions

    DEFF Research Database (Denmark)

    Moll, John L.

    1965-01-01

    Multiplication values were measured in the collector junctions of silicon p-n-p and n-p-n transistors before and after bombardment by 1016 neutrons/cm2. Within experimental error there was no change either in junction fields, as deduced from capacitance measurements, or in multiplication values i...

  17. impairs gap junction function causing congenital cataract

    Indian Academy of Sciences (India)

    Navya

    2017-03-24

    Mar 24, 2017 ... experiment showed a lower dye diffusion distance of Cx46 V44M cells, ... Studies of connexins show that channel gating and permeability .... have found that connexin assembled into gap junction plaques is not soluble in 1% ..... high glucose reduces gap junction activity in microvascular endothelial cells.

  18. impairs gap junction function causing congenital cataract

    Indian Academy of Sciences (India)

    LIJUAN CHEN

    2017-12-20

    Dec 20, 2017 ... showed a lower dye diffusion distance of Cx46 V44M cells, which indicates that the gap junction intercellular ... permeability could be affected by alterations of charged residues of .... bled into gap junction plaques is not soluble in 1% Triton ..... regulation of connexin 43 expression by high glucose reduces.

  19. Adolescentes e grávidas: onde buscam apoio?

    Directory of Open Access Journals (Sweden)

    Roselí Aparecida Godinho

    Full Text Available Adolescência é época de crise, mudança, readaptação ao novo corpo e de novas atitudes frente a vida. Se somarmos a isso o significado da gravidez, dos pontos de vista pessoal, social e familiar, compreenderemos como a gestação pode ser um evento difícil para a adolescente. O presente estudo teve como objetivo identificar onde as adolescentes grávidas buscam apoio. Evidenciou-se que as entrevistadas puderam contar com o apoio da família, principalmente dos pais e, com menos freqüência com o do pai do bebê, bem como a aceitação da gravidez, sua relação com o abandono escolar, a visão idealizada dessas garotas acerca da gestação e expectativas futuras, a preocupação com aspectos biológicos e a despreocupação com problemas concretos.

  20. GrEMBOSS: EMBOSS over the EELA GRID

    Energy Technology Data Exchange (ETDEWEB)

    Bonavides-Martinez, C.; Murrieta-Leon, E.; Verleyen, J.; Zayas-Lagunas, R.; Hernandez-Alvarez, A.; Rodriguez-Bahena, R.; Valverde, J. R.; Branger, P. A.; Sarachu, M.

    2007-07-01

    With the growth of genome databases and the implied complexity for processing such information within bioinformatics research, there is a need for computing power and massive storage facilities which can be provided by Grid infrastructures. EMBOSS is a free Open Source sequence analysis package specially developed for the needs of the bioinformatics and molecular biology user community. This work describes the deployment of EMBOSS over the EELA and EGEE Grids, both gLite middle ware-based infrastructures. This work is focused on rewriting the I/O EMBOSS libraries (AJAX) to use the GFAL from the LCG/EGEE middle ware. This library allows the use of files registered on the catalog service which are contained in the storage elements of a Grid. Submitting a job into a Grid is not an intuitive task. This work also describes an ad hoc mechanism to allow bioinformaticians to concentrate on the EMBOSS command, instead of acquiring advanced knowledge about Grid usage. The results obtained so far demonstrate the functionality of GrEMBOSS, and represent an efficient and viable alternative for gridifying other bioinformatics applications. (Author)

  1. GrEMBOSS: EMBOSS over the EELA GRID

    International Nuclear Information System (INIS)

    Bonavides-Martinez, C.; Murrieta-Leon, E.; Verleyen, J.; Zayas-Lagunas, R.; Hernandez-Alvarez, A.; Rodriguez-Bahena, R.; Valverde, J. R.; Branger, P. A.; Sarachu, M.

    2007-01-01

    With the growth of genome databases and the implied complexity for processing such information within bioinformatics research, there is a need for computing power and massive storage facilities which can be provided by Grid infrastructures. EMBOSS is a free Open Source sequence analysis package specially developed for the needs of the bioinformatics and molecular biology user community. This work describes the deployment of EMBOSS over the EELA and EGEE Grids, both gLite middle ware-based infrastructures. This work is focused on rewriting the I/O EMBOSS libraries (AJAX) to use the GFAL from the LCG/EGEE middle ware. This library allows the use of files registered on the catalog service which are contained in the storage elements of a Grid. Submitting a job into a Grid is not an intuitive task. This work also describes an ad hoc mechanism to allow bioinformaticians to concentrate on the EMBOSS command, instead of acquiring advanced knowledge about Grid usage. The results obtained so far demonstrate the functionality of GrEMBOSS, and represent an efficient and viable alternative for gridifying other bioinformatics applications. (Author)

  2. Electrical transport measurements and degradation of graphene/n-Si Schottky junction diodes

    International Nuclear Information System (INIS)

    Park, No-Won; Lee, Won-Yong; Lee, Sang-Kwon; Koh, Jung-Hyuk; Kim, Dong-Joo; Kim, Gil-Sung; Hyung, Jung-Hwan; Hong, Chang-Hee; Kim, Keun-Soo

    2015-01-01

    We report on the electrical properties, such as the ideality factors and Schottky barrier heights, that were obtained by using current density - voltage (J - V ) and capacitance - voltage (C - V ) characteristics. To fabricate circularly- and locally-contacted Au/Gr/n-Si Schottky diode, we deposited graphene through the chemical vapor deposition (CVD) growth technique, and we employed reactive ion etching to reduce the leakage current of the Schottky diodes. The average values of the barrier heights and the ideality factors from the J .V characteristics were determined to be ∼0.79 ± 0.01 eV and ∼1.80 ± 0.01, respectively. The Schottky barrier height and the doping concentration from the C - V measurements were ∼0.85 eV and ∼1.76 x 10 15 cm -3 , respectively. From the J - V characteristics, we obtained a relatively low reverse leakage current of ∼2.56 x 10 -6 mA/cm -2 at -2 V, which implies a well-defined rectifying behavior. Finally, we found that the Gr/n-Si Schottky diodes that were exposed to ambient conditions for 7 days exhibited a ∼3.2-fold higher sheet resistance compared with the as-fabricated Gr/n-Si diodes, implying a considerable electrical degradation of the Gr/n-Si Schottky diodes.

  3. Fabrication of Josephson Junction without shadow evaporation

    Science.gov (United States)

    Wu, Xian; Ku, Hsiangsheng; Long, Junling; Pappas, David

    We developed a new method of fabricating Josephson Junction (Al/AlOX/Al) without shadow evaporation. Statistics from room temperature junction resistance and measurement of qubits are presented. Unlike the traditional ``Dolan Bridge'' technique, this method requires two individual lithographies and straight evaporations of Al. Argon RF plasma is used to remove native AlOX after the first evaporation, followed by oxidation and second Al evaporation. Junction resistance measured at room temperature shows linear dependence on Pox (oxidation pressure), √{tox} (oxidation time), and inverse proportional to junction area. We have seen 100% yield of qubits made with this method. This method is promising because it eliminates angle dependence during Junction fabrication, facilitates large scale qubits fabrication.

  4. Quantum synchronization effects in intrinsic Josephson junctions

    International Nuclear Information System (INIS)

    Machida, M.; Kano, T.; Yamada, S.; Okumura, M.; Imamura, T.; Koyama, T.

    2008-01-01

    We investigate quantum dynamics of the superconducting phase in intrinsic Josephson junctions of layered high-T c superconductors motivated by a recent experimental observation for the switching rate enhancement in the low temperature quantum regime. We pay attention to only the capacitive coupling between neighboring junctions and perform large-scale simulations for the Schroedinger equation derived from the Hamiltonian considering the capacitive coupling alone. The simulation focuses on an issue whether the switching of a junction induces those of the other junctions or not. The results reveal that the superconducting phase dynamics show synchronous behavior with increasing the quantum character, e.g., decreasing the junction plane area and effectively the temperature. This is qualitatively consistent with the experimental result

  5. Nuclear radiation detection with superconducting tunnel junctions

    International Nuclear Information System (INIS)

    Kurakado, Masahiko

    1984-01-01

    Since the gap energy of superconductors is as small as 1 meV and 1/1000 of that of semiconductors, it is expected that the number of electron-hole pairs produced in superconductors by radiation is several thousands times as many as the pairs in semiconductors. Therefore, high sensitivity and high resolution radiation detectors may be manufactured by using superconductors. A computer simulation of the cascade excitation process of electrons was carried out. The experimental study was performed by using Sn junctions. The variation of transient voltage was measured by the constant current method. The alpha particles from Po-210 were measured, and the generation of quasi particles was confirmed. The relaxation time of signals was measured by using pulsed laser beam. It was found that the superconductors just after the incidence of radiation became nonequilibrium. The typical alpha spectra were obtained by cooling the superconductors to 0.32 K. The detector is still under development. The problem is leakage current. (Kato, T.)

  6. Análise comparativa das PE e PI máximas entre mulheres grávidas e não-grávidas e entre grávidas de diferentes períodos gestacionais

    Directory of Open Access Journals (Sweden)

    Leila Graziele Dias de Almeida

    2005-10-01

    Full Text Available O propósito deste estudo foi de verificar as possíveis diferenças entre as pressões inspiratórias e expiratórias máxima de mulheres grávidas e não-grávidas, bem como entre grávidas de períodos gestacionais diferentes. Para obtenção das informações propostas, foi utilizado o aparelho manuvacuômetro MVD 500, Mhmicrohard Global Med, como instrumento aferidor das pressões expiratória e inspiratória máxima de gestantes e não-gestantes compreendidas dentro de um mesmo grupo etário. O critério utilizado para seleção de informantes desta pesquisa foi estar grávida para um dos grupos e não estar grávida para o outro, sendo as mesmas escolhidas aleatoriamente através de indicações de informantes. A abordagem das informantes foi realizada em suas residências onde foram coletados dados de pressão inspiratória e expiratória máximas para posteriormente serem organizados, processados, categorizados e finalmente obter-se as médias encontradas nos grupos da amostra da pesquisa. As médias de pressão inspiratória e expiratória máximas obtidas nos grupos das gestantes foram as seguintes: PEmax.= 51,3cm H20; e Pimax= 48,3 cm H20; já as médias encontradas no grupo das não-gestantes foram: PEmax = 73 cm H2O, Pimax= 69,2cm H2O. As gestantes pertencentes ao subgrupo do primeiro ao quinto mês apresentaram uma média de PE= 56 cm H2O, e de PI= 60 cm H2O, enquanto que as gestantes do subgrupo a partir do sexto mês apresentaram as médias de PE e Pi= 56 cm H2O e 43,2 cm H2O respectivamente. Os resultados obtidos forneceram subsídios para inferir que existem diferenças entre as pressões inspiratória e expiratória máximas entre grávidas e não-grávidas, bem como em grávidas de período gestacionais diferentes

  7. Resonance Transport of Graphene Nanoribbon T-Shaped Junctions

    International Nuclear Information System (INIS)

    Xiao-Lan, Kong; Yong-Jian, Xiong

    2010-01-01

    We investigate the transport properties of T-shaped junctions composed of armchair graphene nanoribbons of different widths. Three types of junction geometries are considered. The junction conductance strongly depends on the atomic features of the junction geometry. When the shoulders of the junction have zigzag type edges, sharp conductance resonances usually appear in the low energy region around the Dirac point, and a conductance gap emerges. When the shoulders of the junction have armchair type edges, the conductance resonance behavior is weakened significantly, and the metal-metal-metal junction structures show semimetallic behaviors. The contact resistance also changes notably due to the various interface geometries of the junction

  8. Nanofibrous p-n Junction and Its Rectifying Characteristics

    Directory of Open Access Journals (Sweden)

    Jian Fang

    2013-01-01

    Full Text Available Randomly oriented tin oxide (SnO2 nanofibers and poly(3,4-ethylenedioxythiophene-poly(styrenesulfonate/polyvinylpyrrolidone (PEDOT:PSS/PVP nanofibers were prepared by a two-step electrospinning technique to form a layered fibrous mat. The current-voltage measurement revealed that the fibrous mat had an obvious diode-rectifying characteristic. The thickness of the nanofiber layers was found to have a considerable influence on the device resistance and rectifying performance. Such an interesting rectifying property was attributed to the formation of a p-n junction between the fibrous SnO2 and PEDOT:PSS/PVP layers. This is the first report that a rectifying junction can be formed between two layers of electrospun nanofiber mats, and the resulting nanofibrous diode rectifier may find applications in sensors, energy harvest, and electronic textiles.

  9. Charge Transport in 2D DNA Tunnel Junction Diodes

    KAUST Repository

    Yoon, Minho

    2017-11-06

    Recently, deoxyribonucleic acid (DNA) is studied for electronics due to its intrinsic benefits such as its natural plenitude, biodegradability, biofunctionality, and low-cost. However, its applications are limited to passive components because of inherent insulating properties. In this report, a metal-insulator-metal tunnel diode with Au/DNA/NiOx junctions is presented. Through the self-aligning process of DNA molecules, a 2D DNA nanosheet is synthesized and used as a tunneling barrier, and semitransparent conducting oxide (NiOx ) is applied as a top electrode for resolving metal penetration issues. This molecular device successfully operates as a nonresonant tunneling diode, and temperature-variable current-voltage analysis proves that Fowler-Nordheim tunneling is a dominant conduction mechanism at the junctions. DNA-based tunneling devices appear to be promising prototypes for nanoelectronics using biomolecules.

  10. Charge Transport in 2D DNA Tunnel Junction Diodes

    KAUST Repository

    Yoon, Minho; Min, Sung-Wook; Dugasani, Sreekantha Reddy; Lee, Yong Uk; Oh, Min Suk; Anthopoulos, Thomas D.; Park, Sung Ha; Im, Seongil

    2017-01-01

    Recently, deoxyribonucleic acid (DNA) is studied for electronics due to its intrinsic benefits such as its natural plenitude, biodegradability, biofunctionality, and low-cost. However, its applications are limited to passive components because of inherent insulating properties. In this report, a metal-insulator-metal tunnel diode with Au/DNA/NiOx junctions is presented. Through the self-aligning process of DNA molecules, a 2D DNA nanosheet is synthesized and used as a tunneling barrier, and semitransparent conducting oxide (NiOx ) is applied as a top electrode for resolving metal penetration issues. This molecular device successfully operates as a nonresonant tunneling diode, and temperature-variable current-voltage analysis proves that Fowler-Nordheim tunneling is a dominant conduction mechanism at the junctions. DNA-based tunneling devices appear to be promising prototypes for nanoelectronics using biomolecules.

  11. Forward voltage short-pulse technique for measuring high power laser array junction temperature

    Science.gov (United States)

    Meadows, Byron L. (Inventor); Amzajerdian, Frazin (Inventor); Barnes, Bruce W. (Inventor); Baker, Nathaniel R. (Inventor)

    2012-01-01

    The present invention relates to a method of measuring the temperature of the P-N junction within the light-emitting region of a quasi-continuous-wave or pulsed semiconductor laser diode device. A series of relatively short and low current monitor pulses are applied to the laser diode in the period between the main drive current pulses necessary to cause the semiconductor to lase. At the sufficiently low current level of the monitor pulses, the laser diode device does not lase and behaves similar to an electronic diode. The voltage across the laser diode resulting from each of these low current monitor pulses is measured with a high degree of precision. The junction temperature is then determined from the measured junction voltage using their known linear relationship.

  12. Spatial inhomogeneity in Schottky barrier height at graphene/MoS2 Schottky junctions

    Science.gov (United States)

    Tomer, D.; Rajput, S.; Li, L.

    2017-04-01

    Transport properties of graphene semiconductor Schottky junctions strongly depend on interfacial inhomogeneities due to the inherent formation of ripples and ridges. Here, chemical vapor deposited graphene is transferred onto multilayer MoS2 to fabricate Schottky junctions. These junctions exhibit rectifying current-voltage behavior with the zero bias Schottky barrier height increases and ideality factor decreases with increasing temperature between 210 and 300 K. Such behavior is attributed to the inhomogeneous interface that arises from graphene ripples and ridges, as revealed by atomic force and scanning tunneling microscopy imaging. Assuming a Gaussian distribution of the barrier height, a mean value of 0.96  ±  0.14 eV is obtained. These findings indicate a direct correlation between temperature dependent Schottky barrier height and spatial inhomogeneity in graphene/2D semiconductor Schottky junctions.

  13. Is there a relationship between curvature and inductance in the Josephson junction?

    Science.gov (United States)

    Dobrowolski, T.; Jarmoliński, A.

    2018-03-01

    A Josephson junction is a device made of two superconducting electrodes separated by a very thin layer of isolator or normal metal. This relatively simple device has found a variety of technical applications in the form of Superconducting Quantum Interference Devices (SQUIDs) and Single Electron Transistors (SETs). One can expect that in the near future the Josephson junction will find applications in digital electronics technology RSFQ (Rapid Single Flux Quantum) and in the more distant future in construction of quantum computers. Here we concentrate on the relation of the curvature of the Josephson junction with its inductance. We apply a simple Capacitively Shunted Junction (CSJ) model in order to find condition which guarantees consistency of this model with prediction based on the Maxwell and London equations with Landau-Ginzburg current of Cooper pairs. This condition can find direct experimental verification.

  14. Wide bandgap, strain-balanced quantum well tunnel junctions on InP substrates

    International Nuclear Information System (INIS)

    Lumb, M. P.; Yakes, M. K.; Schmieder, K. J.; Affouda, C. A.; Walters, R. J.; González, M.; Bennett, M. F.; Herrera, M.; Delgado, F. J.; Molina, S. I.

    2016-01-01

    In this work, the electrical performance of strain-balanced quantum well tunnel junctions with varying designs is presented. Strain-balanced quantum well tunnel junctions comprising compressively strained InAlAs wells and tensile-strained InAlAs barriers were grown on InP substrates using solid-source molecular beam epitaxy. The use of InAlAs enables InP-based tunnel junction devices to be produced using wide bandgap layers, enabling high electrical performance with low absorption. The impact of well and barrier thickness on the electrical performance was investigated, in addition to the impact of Si and Be doping concentration. Finally, the impact of an InGaAs quantum well at the junction interface is presented, enabling a peak tunnel current density of 47.6 A/cm 2 to be realized.

  15. ATP- and gap junction-dependent intercellular calcium signaling in osteoblastic cells

    DEFF Research Database (Denmark)

    Jorgensen, N R; Geist, S T; Civitelli, R

    1997-01-01

    mechanically induced calcium waves in two rat osteosarcoma cell lines that differ in the gap junction proteins they express, in their ability to pass microinjected dye from cell to cell, and in their expression of P2Y2 (P2U) purinergic receptors. ROS 17/2.8 cells, which express the gap junction protein......Many cells coordinate their activities by transmitting rises in intracellular calcium from cell to cell. In nonexcitable cells, there are currently two models for intercellular calcium wave propagation, both of which involve release of inositol trisphosphate (IP3)- sensitive intracellular calcium...... stores. In one model, IP3 traverses gap junctions and initiates the release of intracellular calcium stores in neighboring cells. Alternatively, calcium waves may be mediated not by gap junctional communication, but rather by autocrine activity of secreted ATP on P2 purinergic receptors. We studied...

  16. A model of magnetic impurities within the Josephson junction of a phase qubit

    Energy Technology Data Exchange (ETDEWEB)

    Erickson, R P; Pappas, D P [National Institute of Standards and Technology, Boulder, CO 80305 (United States)

    2010-02-15

    We consider a superconducting phase qubit consisting of a monocrystalline sapphire Josephson junction with its symmetry axis perpendicular to the junction interfaces. Via the London gauge, we present a theoretical model of Fe{sup 3+} magnetic impurities within the junction that describes the effect of a low concentration of such impurities on the operation of the qubit. Specifically, we derive an interaction Hamiltonian expressed in terms of angular momentum states of magnetic impurities and low-lying oscillator states of a current-biased phase qubit. We discuss the coupling between the qubit and impurities within the model near resonance. When the junction is biased at an optimal point for acting as a phase qubit, with a phase difference of {pi}/2 and impurity concentration no greater than 0.05%, we find only a slight decrease in the Q factor of less than 0.01%.

  17. Two-dimensional simulations of the superconducting proximity in superconductor-semiconductor junctions

    Science.gov (United States)

    Chua, Victor; Vissers, Michael; Law, Stephanie A.; Vishveshwara, Smitha; Eckstein, James N.

    2015-03-01

    We simulate the consequences of the superconducting proximity effect on the DC current response of a semiconductor-superconductor proximity device within the quasiclassical formalism in the diffusively disordered limit. The device is modeled on in-situ fabricated NS junctions of superconducting Nb films on metallic doped InAs films, with electrical terminals placed in an N-S-N T-junction configuration. Due to the non-collinear configuration of this three terminal device, a theoretical model based on coupled two dimensional spectral and distributional Usadel equations was constructed and numerically solved using Finite-Elements methods. In the regime of high junction conductance, our numerical results demonstrate strong temperature and spatial dependencies of the proximity induced modifications to spectral and transport properties. Such characteristics deviate strongly from usual tunnel junction behavior and aspects of this have been observed in prior experiments[arXiv:1402.6055].

  18. Rectification of harmonically oscillating magnetic fields in quarter circular Josephson junctions

    International Nuclear Information System (INIS)

    Shaju, P.D.; Kuriakose, V.C.

    2003-01-01

    A novel method for rectifying harmonically varying magnetic fields is demonstrated using fluxons in quarter circular Josephson junctions (JJs). A JJ with a quarter circular geometry terminated with a load resistor at one end is found to be capable of rectifying alternating fields when biased with a constant dc current. An external magnetic field applied parallel to the dielectric barrier of the junction interacts with the edges of the junction and make asymmetric boundary conditions. These asymmetric boundary conditions facilitate fluxon penetration under a dc bias from one end of the junction in alternate half cycles of the applied field. Thus effective rectification of the field can be achieved using quarter circular JJs. This unique phenomenon is specific to this geometry and can be exploited for making superconducting magnetic field rectifiers. This proposed device is expected to have important applications in millimeter and sub-millimeter radio wave astronomy

  19. Self-positioned thin Pb-alloy base electrode Josephson junction

    International Nuclear Information System (INIS)

    Kuroda, K.; Sato, K.

    1986-01-01

    A self-positioned thin (SPOT) Pb-alloy base electrode Josephson junction is developed. In this junction, a 50-nm thick Pb-alloy base electrode is restricted within the junction region on an Nb underlayer using a self-alignment technique. The grain size reduction and the base electrode area restriction greatly improve thermal cycling stability, where the thermal cycling tests of 4000 proposed junctions (5 x 5 μm 2 ) showed no failures after 4000 cycles. In addition, the elimination of insulator layer stress on the Pb-alloy base electrode rectifies the problem of size effect on current density. The Nb underlayers also serve to isolate the Pb-alloy base electrodes from the resistors

  20. Lift-off process for deep-submicron-size junctions using supercritical CO2

    International Nuclear Information System (INIS)

    Fukushima, A.; Kubota, H.; Yuasa, S.; Takahachi, T.; Kadoriku, S.; Miyake, K.

    2007-01-01

    Deep-submicron-size (∼100-nm-size) junctions are a key element to investigate spin-torque transfer phenomena such as current induced magnetization reversal or the spin-torque diode effect. In the fabrication of submicron-size junctions using an etching method, the lift-off process after the etching process tends to be difficult as the size of junctions shrinks. In this study, we present a new lift-off process using supercritical CO 2 . In this process, the samples were immersed in solvent (mixture of N-Methyl-2-pyrrolidone and isopropanol), and pressurized by CO 2 gas. The CO 2 gas then went into supercritical phase and the solvent was removed by a continuous flow of CO 2 . We obtained considerable yield rate (success ratio in lift-off process) of more than 50% for the samples down to 100-nm-size junctions