Fabrication of a Schottky junction diode with direct growth graphene on silicon by a solid phase reaction

International Nuclear Information System (INIS)

Kalita, Golap; Hirano, Ryo; Ayhan, Muhammed E; Tanemura, Masaki

2013-01-01

We demonstrate fabrication of a Schottky junction diode with direct growth graphene on n-Si by the solid phase reaction approach. Metal-assisted crystallization of a-C thin film was performed to synthesize transfer-free graphene directly on a SiO 2 patterned n-Si substrate. Graphene formation at the substrate and catalyst layer interface is achieved in presence of a Co catalytic and CoO carbon diffusion barrier layer. The as-synthesized material shows a linear current–voltage characteristic confirming the metallic behaviour of the graphene structure. The direct grown graphene on n-Si substrate creates a Schottky junction with a potential barrier of 0.44 eV and rectification diode characteristic. Our finding shows that the directly synthesized graphene on Si substrate by a solid phase reaction process can be a promising technique to fabricate an efficient Schottky junction device. (paper)

Reproducible fabrication and characterization of YBa2Cu3O7 Josephson junctions and SQUIDs on SrTiO3 bi-crystal substrates

International Nuclear Information System (INIS)

Kromann, R.; Vase, P.; Shen, Y.Q.; Freltoft, T.

1993-01-01

The fabrication of Josephson junctions and SQUIDs using ceramic high T c superconductors continues to be a subject of great interest and activity. In the case of the YBCO family of superconductors, most of the research effort has been concentrated on the grain boundary junctions. This type of junction can be fabricated in a controlled way by a variety of approaches, such as the bi-crystal technique, the bi-epitaxial technique or the step-edge technique. From a fabrication point of view, the bi-crystal technique is by far the simplest of the three. The availability of (100) SrTiO 3 bi-crystals on a commercial basis has lead to the possibility of making Josephson junctions by a simple process involving only one deposition and one patterning step. Reproducibility of the junction parameters between junctions on the same chip is a key point for electronic applications of Josephson junctions requiring a large amount of Josephson junctions working at the same time, as for example in the voltage standard. Another key point is the uniformity of the barrier, i.e. the extent to which the junction behaves as an ideal SIS junction. In this work junction uniformity has been studied by Frauenhofer diffraction patterns. The Josephson junctions have also been used in the fabrication of dc SQUIDs. In this work we have tried to optimize the magnitude of the voltage modulation from the SQUID by varying the design parameters. The SQUIDs have been characterized in terms of I c , R n , voltage modulation and noise properties. (orig.)

Multiseeding with (100)/(100) Grain Junctions in Top Seeded Melt Growth Processed YBCO Superconductors

Energy Technology Data Exchange (ETDEWEB)

Kim, C.J.; Gee, Y.A.; Hong, G.W. [Korea Atomic Energy Research Institute, Taejon (Korea); Kim, H.J.; Joo, J.H. [Sungkyunkwan University, Suwon (Korea); Han, S.C.; Han, Y.H.; Sung, T.H.; Kim, S.J. [Korea Electric Power Research Institute, Taejon (Korea)

2000-06-01

Multiseeding with (100)/(100) grain junctions of top-seeded melt growth (TSMG) processed YBCO superconductors was studied. Multiple seeding shortened the processing time for the fabrication of TSMG-processed YBCO superconductors. The relationship among the number of seeds, the levitation forces and the trapped magnetic fields of the TSMG-processed YBCO samples is reported. The characteristic of the (100)/(100) grain junction is discussed in terms of a wetting angle of a melt. (author). 25 refs., 7 figs.

Fabrication of TiN/AlN/TiN tunnel junctions

Energy Technology Data Exchange (ETDEWEB)

Nakayama, Takeru; Naruse, Masato; Myoren, Hiroaki; Taino, Tohru, E-mail: taino@mail.saitama-u.ac.jp

2016-11-15

Highlights: • We have fabricated TiN/AlN/TiN tunnel junctions with an epitaxial layer. • TiN and AlN films were deposited by dc and rf magnetron sputtering at ambient substrate temperatures. • The junctions have a V{sub g} = 1.1 mV, J{sub c} = 0.24 A/cm{sup 2}, R{sub sg}/R{sub n} of 7.2, and low subgap leakage current of 180 nA. - Abstract: We have fabricated TiN/AlN/TiN tunnel junctions with an epitaxial layer. The critical temperature of TiN can be changed in the range from 0.5 to 5.0 K. Therefore, it is easy to set 5.0 K as the target critical temperature. When a Superconducting Tunnel Junction (STJ) is operated as a photon detector, it is necessary to cool it to within 0.1 K of the critical temperature in consideration of the noise of the thermally stimulated currents. Because 0.3 K was desirable, as for the manufacture of general purpose photon detectors, the critical temperature 5.0 K. TiN and AlN films were deposited by dc and rf magnetron sputtering in a load-lock sputtering system at ambient substrate temperatures. The junctions have a gap voltage of V{sub g} = 1.1 mV, and critical current density of J{sub c} = 0.24 A/cm{sup 2}, and R{sub sg}/R{sub n} of 7.2, and low subgap leakage current (I{sub sub}@ 500 µV = 180 nA). We report our experiment system, the manufacture method and the junction properties in this paper.

Niobium tunnel junction fabrication using e-gun evaporation and SNAP

Science.gov (United States)

Kortlandt, J.; van der Zant, H. S. J.; Schellingerhout, A. J. G.; Mooij, J. E.

1990-11-01

We have fabricated high quality small area Nb-Al-Al 2O 3-Nb junctions with SNAP, making use of e-beam evaporation in a 10 -5 Pa diffusion pumped vacuum system. Nominal dimensions of the junctions are 8x8, 4x4 and 2x2 μm 2. We obtain typical current densities of 5-6 × 10 +2A/cm 2 and (critical current) x (subgap resistance) products of 40 mV.

Fabrication and characteristics of a 4H-SiC junction barrier Schottky diode

International Nuclear Information System (INIS)

Chen Fengping; Zhang Yuming; Lue Hongliang; Zhang Yimen; Guo Hui; Guo Xin

2011-01-01

4H-SiC junction barrier Schottky (JBS) diodes with four kinds of design have been fabricated and characterized using two different processes in which one is fabricated by making the P-type ohmic contact of the anode independently, and the other is processed by depositing a Schottky metal multi-layer on the whole anode. The reverse performances are compared to find the influences of these factors. The results show that JBS diodes with field guard rings have a lower reverse current density and a higher breakdown voltage, and with independent P-type ohmic contact manufacturing, the reverse performance of 4H-SiC JBS diodes can be improved effectively. Furthermore, the P-type ohmic contact is studied in this work. (semiconductor devices)

Technology of fabrication of silicon-lithium detector with superficial junction

International Nuclear Information System (INIS)

Cabal Rodriguez, A.E.; Diaz Garcia, A.; Noriega Scull, C.

1997-01-01

The Silicon nuclear radiation detectors transform the charge produced within the semiconductor crystal, product of the impinges of particles and X rays, in pulses of voltage at the output of the preamplifier. The planar Silicon-Lithium (Si(Li)) detector with superficial junction is basically a Pin structure diode. By mean of the diffusion and drift of Lithium in the Silicon a compensated or depletion region was created. There the incident radiation interacts with the Silicon, producing an electric signal proportional to the detector's energy deposited in the semiconductor. The technological process of fabrication this kind of detectors comprises several stages, some of them complex and of long duration. They also demand a systematic control. The technological process of Si(Li) detector's fabrication was carried out. The detector's fabrication electric characteristics were measured in some steps. An obtained device was mounted in the holder within a cryostat, in order to work to temperature of the liquid nitrogen. The energy resolution of the detector was measured and the value was 180 eV for the line of 5.9 KeV of an Fe-55 source. This value has allowed to work with the detector in energy disperse X-rays fluorescence. (author) [es

Junction depth dependence of breakdown in silicon detector diodes

International Nuclear Information System (INIS)

Beck, G.A.; Carter, A.A.; Carter, J.R.; Greenwood, N.M.; Lucas, A.D.; Munday, D.J.; Pritchard, T.W.; Robinson, D.; Wilburn, C.D.; Wyllie, K.

1996-01-01

The high voltage capability of detector diodes fabricated in the planar process is limited by the high field generated at the edge of the junction.We have fabricated diodes with increased junction depth with respect to our standard process and find a significantly higher breakdown voltage,in reasonable agreement with previous studies of junction breakdown. (orig.)

An Efficient Solution-Processed Intermediate Layer for Facilitating Fabrication of Organic Multi-Junction Solar Cells

DEFF Research Database (Denmark)

Ning Li; Baran, Derya; Forberich, Karen

2013-01-01

):poly(styrenesulfonate) (PEDOT:PSS) is demonstrated for series-connected multi-junction organic solar cells (OSCs). Drying at 80 °C in air is sufficient for this solution-processed IML to obtain excellent functionality and reliability, which allow the use of most of high performance donor materials in the tandem structure....... An open circuit voltage (Voc) of 0.56 V is obtained for single-junction OSCs based on a low band-gap polymer, while multi-junction OSCs based on the same absorber material deliver promising fill factor values along with fully additive Voc as the number of junctions increase. Optical and electrical...... simulations, which are reliable and promising guidelines for the design and investigation of multi-junction OSCs, are discussed. The outcome of optical and electrical simulations is in excellent agreement with the experimental data, indicating the outstanding efficiency and functionality of this solution...

Modeling and fabrication of 4H-SiC Schottky junction

Science.gov (United States)

Martychowiec, A.; Pedryc, A.; Kociubiński, A.

2017-08-01

The rapidly growing demand for electronic devices requires using of alternative semiconductor materials, which could replace conventional silicon. Silicon carbide has been proposed for these harsh environment applications (high temperature, high voltage, high power conditions) because of its wide bandgap, its high temperature operation ability, its excellent thermal and chemical stability, and its high breakdown electric field strength. The Schottky barrier diode (SBD) is known as one of the best refined SiC devices. This paper presents prepared model, simulations and description of technology of 4H-SiC Schottky junction as well as characterization of fabricated structures. The future aim of the application of the structures is an optical detection of an ultraviolet radiation. The model section contains a comparison of two different solutions of SBD's construction. Simulations - as a crucial process of designing electronic devices - have been performed using the ATLAS device of Silvaco TCAD software. As a final result the paper shows I-V characteristics of fabricated diodes.

Fabrication and characterization of graphene/molecule/graphene vertical junctions with aryl alkane monolayers

Science.gov (United States)

Jeong, Inho; Song, Hyunwook

2017-11-01

In this study, we fabricated and characterized graphene/molecule/graphene (GMG) vertical junctions with aryl alkane monolayers. The constituent molecules were chemically self-assembled via electrophilic diazonium reactions into a monolayer on the graphene bottom electrode, while the other end physically contacted the graphene top electrode. A full understanding of the transport properties of molecular junctions is a key step in the realization of molecular-scale electronic devices and requires detailed microscopic characterization of the junction's active region. Using a multiprobe approach combining a variety of transport techniques, we elucidated the transport mechanisms and electronic structure of the GMG junctions, including temperature- and length-variable transport measurements, and transition voltage spectroscopy. These results provide criteria to establish a valid molecular junction and to determine the most probable transport characteristics of the GMG junctions.

Fabrication and properties of sub-micrometric YBCO biepitaxial junctions

Energy Technology Data Exchange (ETDEWEB)

Stornaiuolo, D; Born, D; Barone, A [CNR-INFM Coherentia, Napoli (Italy); Cedergren, K; Bauch, T; Lombardi, F [MC2 Chalmers University of Technology, Goteborg (Sweden); Rotoli, G [CNISM and Universita dell' Aquila (Italy); Tafuri, F, E-mail: stornaiuolo@na.infh.i [Seconda Universita degli Studi di Napoli, Aversa (Italy)

2009-03-01

We report on the fabrication procedure and the transport properties of submicron grain boundary biepitaxial YBCO Josephson junctions. These first results are very encouraging and justify further expectations on improved performances for such types of devices. A reduced and more controlled faceting along the grain boundary interface, for instance, will better preserve intrinsic d-wave effects, and favour the study of fluxons dynamics.

Broad and focused ion beams Ga+ implantation damage in the fabrication of p+-n Si shallow junctions

International Nuclear Information System (INIS)

Steckl, A.J.; Lin, C.M.; Patrizio, D.; Rai, A.K.; Pronko, P.P.

1989-01-01

The use of focused and broad beam Ga + implantation for the fabrication of p + -n Si shallow junctions is explored. In particular, the issue of ion induced damage and its effect on diode electrical properties is explored. FIB-fabricated junctions exhibit a deeper junction with lower sheet resistance and higher leakage current than the BB-implanted diodes. TEM analysis exhibits similar amorphization and recrystallization behavior for both implantation techniques with the BB case generating a higher dislocation loop density after a 900 degree C anneal. 6 refs., 5 figs., 1 tab

ALTERNATIVE MATERIALS FOR RAMP-EDGE SNS JUNCTIONS

International Nuclear Information System (INIS)

Jia, Q.; Fan, Y.; Gim, Y.

1999-01-01

We report on the processing optimization and fabrication of ramp-edge high-temperature superconducting junctions by using alternative materials for both superconductor electrodes and normal-metal barrier. By using Ag-doped YBa 2 Cu 3 O 7-x (Ag:YBCO) as electrodes and a cation-modified compound of (Pr y Gd 0.6-y )Ca 0.4 Ba 1.6 La 0.4 Cu 3 O 7 (y = 0.4, 0.5, and 0.6) as a normal-metal barrier, high-temperature superconducting Josephson junctions have been fabricated in a ramp-edge superconductor/normal-metal/superconductor (SNS) configuration. By using Ag:YBCO as electrodes, we have found that the processing controllability /reproducibility and the stability of the SNS junctions are improved substantially. The junctions fabricated with these alternative materials show well-defined RSJ-like current vs voltage characteristics at liquid nitrogen temperature

Versatile multi-layer Josephson junction process for vortex molecules

Energy Technology Data Exchange (ETDEWEB)

Meckbach, Johannes Maximilian; Buehler, Simon; Merker, Michael; Il' in, Konstantin; Siegel, Michael [Institut fuer Mikro- und Nanoelektronische Systeme, KIT (Germany); Buckenmaier, Kai; Gaber, Tobias; Kienzle, Uta; Neumaier, Benjamin; Goldobin, Edward; Kleiner, Reinhold; Koelle, Dieter [Physikalisches Institut - Experimentalphysik II, Universitaet Tuebingen (Germany)

2012-07-01

In long Josephson junctions magnetic flux may penetrate the barrier resulting in a so-called Josephson-Vortex carrying one flux quantum Φ{sub 0}. In recent years a new type of Josephson-Vortex became available, which carries any arbitrary fraction Φ = -Φ{sub 0}κ/2π of magnetic flux. These fractional vortices (p-vortices) spontaneously appear at discontinuities of the Josephson phase along the junction, which in turn are created using a pair of current injectors. We present a new Nb/Al-AlO{sub x}/Nb process for the fabrication of Josephson junctions of very high quality. Placing two injector pairs along the strongly underdamped long junctions allows the investigation of fractional vortex molecules. The topological charge of each vortex and their interaction can be altered even during experiment by changing the individual injector currents. Vortex molecule states have been measured using asymmetric DC-SQUIDs coupled to the vortices by overlying pick-up loops. To uphold the p-vortices we use persistent currents, which can be altered using heat switches. Fractional vortex molecules are promising candidates for a new type of qubits.

Fabrication of atomic-scale gold junctions by electrochemical plating using a common medical liquid

Science.gov (United States)

Umeno, A.; Hirakawa, K.

2005-04-01

Fabrication of nanometer-separated gold junctions has been performed using "iodine tincture," a medical liquid known as a disinfectant, as an etching/deposition electrolyte. In the gold-dissolved iodine tincture, gold electrodes were grown or eroded slowly enough to form quantum point contacts in an atomic scale. The resistance evolution during the electrochemical deposition showed plateaus at integer multiples of the resistance quantum, (2e2/h)-1, at room temperature (e: the elementary charge, h: the Planck constant). Iodine tincture is a commercially available common material, which makes the fabrication process to be simple and cost effective. Moreover, in contrast to the conventional electrochemical approaches, this method is free from highly toxic cyanide compounds or extraordinarily strong acids.

Fabrication of magnetic tunnel junctions connected through a continuous free layer to enable spin logic devices

Science.gov (United States)

Wan, Danny; Manfrini, Mauricio; Vaysset, Adrien; Souriau, Laurent; Wouters, Lennaert; Thiam, Arame; Raymenants, Eline; Sayan, Safak; Jussot, Julien; Swerts, Johan; Couet, Sebastien; Rassoul, Nouredine; Babaei Gavan, Khashayar; Paredis, Kristof; Huyghebaert, Cedric; Ercken, Monique; Wilson, Christopher J.; Mocuta, Dan; Radu, Iuliana P.

2018-04-01

Magnetic tunnel junctions (MTJs) interconnected via a continuous ferromagnetic free layer were fabricated for spin torque majority gate (STMG) logic. The MTJs are biased independently and show magnetoelectric response under spin transfer torque. The electrical control of these devices paves the way to future spin logic devices based on domain wall (DW) motion. In particular, it is a significant step towards the realization of a majority gate. To our knowledge, this is the first fabrication of a cross-shaped free layer shared by several perpendicular MTJs. The fabrication process can be generalized to any geometry and any number of MTJs. Thus, this framework can be applied to other spin logic concepts based on magnetic interconnect. Moreover, it allows exploration of spin dynamics for logic applications.

Triple-junction thin-film silicon solar cell fabricated on periodically textured substrate with a stabilized efficiency of 13.6%

Science.gov (United States)

Sai, Hitoshi; Matsui, Takuya; Koida, Takashi; Matsubara, Koji; Kondo, Michio; Sugiyama, Shuichiro; Katayama, Hirotaka; Takeuchi, Yoshiaki; Yoshida, Isao

2015-05-01

We report a high-efficiency triple-junction thin-film silicon solar cell fabricated with the so-called substrate configuration. It was verified whether the design criteria for developing single-junction microcrystalline silicon (μc-Si:H) solar cells are applicable to multijunction solar cells. Furthermore, a notably high short-circuit current density of 32.9 mA/cm2 was achieved in a single-junction μc-Si:H cell fabricated on a periodically textured substrate with a high-mobility front transparent contacting layer. These technologies were also combined into a-Si:H/μc-Si:H/μc-Si:H triple-junction cells, and a world record stabilized efficiency of 13.6% was achieved.

Proximity effect and hot-electron diffusion in Ag/Al2O3/Al tunnel junctions

International Nuclear Information System (INIS)

Netel, H.; Jochum, J.; Labov, S.E.; Mears, C.A.; Frank, M.; Chow, D.; Lindeman, M.A.; Hiller, L.J.

1997-01-01

We have fabricated Ag/Al 2 O 3 /Al tunnel junctions on Si substrates using a new process. This process was developed to fabricate superconducting tunnel junctions (STJs) on the surface of a superconductor. These junctions allow us to study the proximity effect of a superconducting Al film on a normal metal trapping layer. In addition, these devices allow us to measure the hot-electron diffusion constant using a single junction. Lastly these devices will help us optimize the design and fabrication of tunnel junctions on the surface of high-Z, ultra-pure superconducting crystals. 5 refs., 8 figs

Silicon fiber with p-n junction

International Nuclear Information System (INIS)

Homa, D.; Cito, A.; Pickrell, G.; Hill, C.; Scott, B.

2014-01-01

In this study, we fabricated a p-n junction in a fiber with a phosphorous doped silicon core and fused silica cladding. The fibers were fabricated via a hybrid process of the core-suction and melt-draw techniques and maintained overall diameters ranging from 200 to 900 μm and core diameters of 20–800 μm. The p-n junction was formed by doping the fiber with boron and confirmed via the current-voltage characteristic. The demonstration of a p-n junction in a melt-drawn silicon core fiber paves the way for the seamless integration of optical and electronic devices in fibers.

The anatomical locus of T-junction processing.

Science.gov (United States)

Schirillo, James A

2009-07-01

Inhomogeneous surrounds can produce either asymmetrical or symmetrical increment/decrement induction by orienting T-junctions to selectively group a test patch with surrounding regions [Melfi, T., & Schirillo, J. (2000). T-junctions in inhomogeneous surrounds. Vision Research, 40, 3735-3741]. The current experiments aimed to determine where T-junctions are processed by presenting each eye with a different image so that T-junctions exist only in the fused percept. Only minor differences were found between retinal and cortical versus cortical-only conditions, indicating that T-junctions are processed cortically.

Overlap junctions for high coherence superconducting qubits

Science.gov (United States)

Wu, X.; Long, J. L.; Ku, H. S.; Lake, R. E.; Bal, M.; Pappas, D. P.

2017-07-01

Fabrication of sub-micron Josephson junctions is demonstrated using standard processing techniques for high-coherence, superconducting qubits. These junctions are made in two separate lithography steps with normal-angle evaporation. Most significantly, this work demonstrates that it is possible to achieve high coherence with junctions formed on aluminum surfaces cleaned in situ by Ar plasma before junction oxidation. This method eliminates the angle-dependent shadow masks typically used for small junctions. Therefore, this is conducive to the implementation of typical methods for improving margins and yield using conventional CMOS processing. The current method uses electron-beam lithography and an additive process to define the top and bottom electrodes. Extension of this work to optical lithography and subtractive processes is discussed.

Fabrication and characterization of intrinsic Josephson junctions in RE-123 whiskers

International Nuclear Information System (INIS)

Okutsu, T.; Ueda, S.; Ishii, S.; Nagasawa, M.; Takano, Y.

2008-01-01

The series of REBa 2 Cu 3 O 7-δ RE-123; RE = Y, Eu, Gd, Dy, Ho, Er, Tm, and Lu) single-crystal whiskers have been successfully grown using the Te- or Sb-doping method. Intrinsic Josephson junctions (IJJs) were fabricated from the whiskers using a focused ion beam (FIB). As-grown IJJs with T c > 70 K showed a Josephson current but no multi-branches in the current-voltage (I-V) characteristics. Under-doped specimens were obtained by a post-annealing process. As-grown IJJs with lower T c and all the specimens of the post-annealed IJJs showed clear multi-branched structure. The post-annealing reduced the critical temperature (T c ) and the critical current density (J c ) of the IJJs, and increased the anisotropic parameter γ

Ohmic contact junction of carbon nanotubes fabricated by in situ electron beam deposition

International Nuclear Information System (INIS)

Wang, Y G; Wang, T H; Lin, X W; Dravid, V P

2006-01-01

We present experimental evidence of in situ fabrication of multi-walled carbon nanotube junctions via electron beam induced deposition. The tip-to-tip interconnection of the nanotubes involves the alignment of two nanotubes via a piezodriven nanomanipulator and nano-welding by electron beam deposition. Hydrocarbon contamination from the pump oil vapour of the vacuum system of the TEM chamber was used as the solder; this is superior to the already available metallic solders because its composition is identical to the carbon nanotube. The hydrocarbon deposition, with perfect wettability, on the nanotubes establishes strong mechanical binding between the two nanotubes to form an integrated structure. Consequently, the nanotubes cross-linked by the hydrocarbon solder produce good electrical and mechanical connections. The joint dimension was determined by the size of the electron beam, which results in a sound junction with well-defined geometry and the smallest junction size obtained so far. In situ electric measurement showed a linear current-voltage property for the multi-walled nanotube junction

NbN tunnel junctions

International Nuclear Information System (INIS)

Villegier, J.C.; Vieux-Rochaz, L.; Goniche, M.; Renard, P.; Vabre, M.

1984-09-01

All-niobium nitride Josephon junctions have been prepared successfully using a new processing called SNOP: Selective Niobium (nitride) Overlap Process. Such a process involves the ''trilayer'' deposition on the whole wafer before selective patterning of the electrodes by optically controlled dry reactive ion etching. Only two photomask levels are need to define an ''overlap'' or a ''cross-type'' junction with a good accuracy. The properties of the niobium nitride films deposited by DC-magnetron sputtering and the surface oxide growth are analysed. The most critical point to obtain high quality and high gap value junctions resides in the early stage of the NbN counterelectrode growth. Some possibilities to overcome such a handicap exist even if the fabrication needs substrate temperatures below 250 0 C

Integrating atomic layer deposition and ultra-high vacuum physical vapor deposition for in situ fabrication of tunnel junctions

Energy Technology Data Exchange (ETDEWEB)

Elliot, Alan J., E-mail: alane@ku.edu, E-mail: jwu@ku.edu; Malek, Gary A.; Lu, Rongtao; Han, Siyuan; Wu, Judy Z., E-mail: alane@ku.edu, E-mail: jwu@ku.edu [Department of Physics and Astronomy, The University of Kansas, Lawrence, Kansas 66045 (United States); Yu, Haifeng; Zhao, Shiping [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China)

2014-07-15

Atomic Layer Deposition (ALD) is a promising technique for growing ultrathin, pristine dielectrics on metal substrates, which is essential to many electronic devices. Tunnel junctions are an excellent example which require a leak-free, ultrathin dielectric tunnel barrier of typical thickness around 1 nm between two metal electrodes. A challenge in the development of ultrathin dielectric tunnel barriers using ALD is controlling the nucleation of dielectrics on metals with minimal formation of native oxides at the metal surface for high-quality interfaces between the tunnel barrier and metal electrodes. This poses a critical need for integrating ALD with ultra-high vacuum (UHV) physical vapor deposition. In order to address these challenges, a viscous-flow ALD chamber was designed and interfaced to an UHV magnetron sputtering chamber via a load lock. A sample transportation system was implemented for in situ sample transfer between the ALD, load lock, and sputtering chambers. Using this integrated ALD-UHV sputtering system, superconductor-insulator-superconductor (SIS) Nb-Al/Al{sub 2}O{sub 2}/Nb Josephson tunnel junctions were fabricated with tunnel barriers of thickness varied from sub-nm to ∼1 nm. The suitability of using an Al wetting layer for initiation of the ALD Al{sub 2}O{sub 3} tunnel barrier was investigated with ellipsometry, atomic force microscopy, and electrical transport measurements. With optimized processing conditions, leak-free SIS tunnel junctions were obtained, demonstrating the viability of this integrated ALD-UHV sputtering system for the fabrication of tunnel junctions and devices comprised of metal-dielectric-metal multilayers.

Constructing carbon nanotube junctions by Ar ion beam irradiation

International Nuclear Information System (INIS)

Ishaq, Ahmad; Ni Zhichun; Yan Long; Gong Jinlong; Zhu Dezhang

2010-01-01

Carbon nanotubes (CNTs) irradiated by Ar ion beams at elevated temperature were studied. The irradiation-induced defects in CNTs are greatly reduced by elevated temperature. Moreover, the two types of CNT junctions, the crossing junction and the parallel junction, were formed. And the CNT networks may be fabricated by the two types of CNT junctions. The formation process and the corresponding mechanism of CNT networks are discussed.

A universal route to fabricate n-i-p multi-junction polymer solar cells via solution processing

NARCIS (Netherlands)

Rasi, Dario Di Carlo; Hendriks, Koen H.; Heintges, Gael H. L.; Simone, Giulio; Gelinck, Gerwin H.; Gevaerts, Veronique S.; Andriessen, Ronn; Pirotte, Geert; Maes, Wouter; Li, Weiwei; Wienk, Martijn M.; Janssen, Rene A. J.

The interconnection layer (ICL) that connects adjacent subcells electrically and optically in solution‐processed multi‐junction polymer solar cells must meet functional requirements in terms of work functions, conductivity, and transparency, but also be compatible with the multiple layer stack in

Fabrication of full high-T sub c superconducting YBa sub 2 Cu sub 3 O sub 7 sub - sub x trilayer junctions using a polishing technique

CERN Document Server

Kuroda, K; Takami, T; Ozeki, T

2003-01-01

We have successfully fabricated full high-T sub c superconducting YBa sub 2 Cu sub 3 O sub 7 sub - sub x (YBCO)/PrBa sub 2 Cu sub 3 O sub 7 sub - sub x (PBCO)/YBCO trilayer junctions, which have a simple device structure, such as a Pb-alloy-based Josephson tunneling junction. It has been demonstrated that a polishing technique is extremely useful in the fabrication process: it is effective in smoothing a coarse surface and gentling the slopes of the edges, or decreasing the slope angles. Owing to the polishing technique, the PBCO barrier layer and the upper YBCO layer have been notably thinned: the thicknesses of these layers are 10 nm and 250 nm, respectively. Junctions with the dimensions of 5 mu m x 5 mu m showed resistively shunted junction-like current-voltage curves with a typical critical current density of 110 A/cm sup 2 at 4.2 K. Furthermore, the operation of superconducting quantum interference devices has been demonstrated. (author)

Tunable Nitride Josephson Junctions.

Energy Technology Data Exchange (ETDEWEB)

Missert, Nancy A. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Henry, Michael David [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Lewis, Rupert M. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Howell, Stephen W. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Wolfley, Steven L. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Brunke, Lyle Brent [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Wolak, Matthaeus [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

2017-12-01

We have developed an ambient temperature, SiO₂/Si wafer - scale process for Josephson junctions based on Nb electrodes and Ta x N barriers with tunable electronic properties. The films are fabricated by magnetron sputtering. The electronic properties of the Ta_xN barriers are controlled by adjusting the nitrogen flow during sputtering. This technology offers a scalable alternative to the more traditional junctions based on AlO_x barriers for low - power, high - performance computing.

Horizontal Assembly of Single Nanowire Diode Fabricated by p-n Junction GaN NW Grown by MOCVD

Directory of Open Access Journals (Sweden)

Ji-Hyeon Park

2014-01-01

Full Text Available Uniaxially p-n junction gallium nitride nanowires have been synthesized via metal-organic chemical vapor deposition method. Nanowires prepared on Si(111 substrates were found to grow perpendicular to the substrate, and the transmission electron microscopy studies demonstrated that the nanowires had singlecrystalline structures with a growth axis. The parallel assembly of the p-n junction nanowire was prepared on a Si substrate with a thermally grown SiO2 layer. The transport studies of horizontal gallium nitride nanowire structures assembled from p- and n-type materials show that these junctions correspond to well-defined p-n junction diodes. The p-n junction devices based on GaN nanowires suspended over the electrodes were fabricated and their electrical properties were investigated. The horizontally assembled gallium nitride nanowire diodes suspended over the electrodes exhibited a substantial increase in conductance under UV light exposure. Apart from the selectivity to different light wavelengths, high responsivity and extremely short response time have also been obtained.

Superconducting flux qubits with π-junctions

International Nuclear Information System (INIS)

Shcherbakova, Anastasia

2014-01-01

In this thesis, we present a fabrication technology of Al/AlO x /Al Josephson junctions on Nb pads. The described technology gives the possibility of combining a variety of Nb-based superconducting circuits, like pi-junction phase-shifters with sub-micron Al/AlO x /Al junctions. Using this approach, we fabricated hybrid Nb/Al flux qubits with and without the SFS-junctions and studied dispersive magnetic field response of these qubits as well as their spectroscopy characteristics.

White-light emission from porous-silicon-aluminium Schottky junctions

International Nuclear Information System (INIS)

Masini, G.; La Monica, S.; Maiello, G.

1996-01-01

Porous-silicon-based white-light-emitting devices are presented. The fabrication process on different substrates is described. The peculiarities of technological steps for device fabrication (porous-silicon formation and aluminium treatment) are underlined. Doping profile of the porous layer, current-voltage characteristics, time response, lifetime tests and electroluminescence emission spectrum of the device are presented. A model for electrical behaviour of Al/porous silicon Schottky junction is presented. Electroluminescence spectrum of the presented devices showed strong similarities with white emission from crystalline silicon junctions in the breakdown region

Several alternative approaches to the manufacturing of HTS Josephson junctions

OpenAIRE

Villegier , J.; Boucher , H.; Ghis , A.; Levis , M.; Méchin , Laurence; Moriceau , H.; Pourtier , F.; Vabre , M.; Nicoletti , S.; Correra , L.

1994-01-01

In this work we describe comparatively the fabrication and the characterization of various types of HTS Josephson junctions manufactured using different processes : grain boundary junctions have been studied both by the way of junctions on bicrystal substrates and of bi-epitaxial junctions. Ramp-edge types have been elaborated and characterized using mainly N-YBaCuO thin film as a barrier while the trilayer approach has been investigated through a-axis structures. YBaCuO or GdBaCuO supercondu...

Fabrication and characterization of Bi2Sr2CaCu2O8+δ stacks by self-planarizing process

International Nuclear Information System (INIS)

Okanoue, K.; Ishida, H.; Funabiki, H.; Hamasaki, K.; Shimakage, N.; Kawakami, A.; Wang, Z.; Abe, H.

2005-01-01

We developed a new fabrication process of stacked intrinsic Josephson junctions using superconducting Bi 2 Sr 2 CaCu 2 O 8+δ (Bi-2212) single crystals. In the proposed self-planarizing process, the Bi-2212 crystal around the junction window was modified to insulator by soaking into the solution of dilute (0.05-0.2%) hydrochloric acid for 5 s. Energy dispersive X-ray (EDX) spectroscopy revealed that the acid-treated Bi-2212 exhibited the decrease of Cu and Sr contents in the crystals. The current-voltage characteristic of the stacks showed distinct resistive branches with large hysteresis at 77 K. The number of intrinsic junctions in the stacks linearly decreased with decreasing the concentration of the solution. The well controllability of the number of junctions in the self-planarized stacks may be useful for electronic device applications

Josephson junctions with ferromagnetic alloy interlayer

Energy Technology Data Exchange (ETDEWEB)

Himmel, Nico

2015-07-23

Josephson junctions are used as active devices in superconducting electronics and quantum information technology. Outstanding properties are their distinct non-linear electrical characteristics and a usually sinusoidal relation between the current and the superconducting phase difference across the junction. In general the insertion of ferromagnetic material in the barrier of a Josephson junction is associated with a suppression of superconducting correlations. But also new phenomena can arise which may allow new circuit layouts and enhance the performance of applications. This thesis presents a systematic investigation for two concepts to fabricate Josephson junctions with a rather uncommon negative critical current. Such devices exhibit an intrinsic phase slip of π between the electrodes, so they are also known as π junctions. Both studies go well beyond existing experiments and in one system a π junction is shown for the first time. All the thin film junctions are based on superconducting Nb electrodes. In a first approach, barriers made from Si and Fe were investigated with respect to the realisation of π junctions by spin-flip processes. The distribution of Fe in the Si matrix was varied from pure layers to disperse compounds. The systematic fabrication of alloy barriers was facilitated by the development of a novel timing-based combinatorial sputtering technique for planetary deposition systems. An orthogonal gradient approach allowed to create binary layer libraries with independent variations of thickness and composition. Second, Nb vertical stroke AlO{sub x} vertical stroke Nb vertical stroke Ni{sub 60}Cu{sub 40} vertical stroke Nb (SIsFS) double barrier junctions were experimentally studied for the occurrence of proximity effect induced order parameter oscillations. Detailed dependencies of the critical current density on the thickness of s-layer and F-layer were acquired and show a remarkable agreement to existing theoretical predictions. Especially

Josephson junctions with ferromagnetic alloy interlayer

International Nuclear Information System (INIS)

Himmel, Nico

2015-01-01

Josephson junctions are used as active devices in superconducting electronics and quantum information technology. Outstanding properties are their distinct non-linear electrical characteristics and a usually sinusoidal relation between the current and the superconducting phase difference across the junction. In general the insertion of ferromagnetic material in the barrier of a Josephson junction is associated with a suppression of superconducting correlations. But also new phenomena can arise which may allow new circuit layouts and enhance the performance of applications. This thesis presents a systematic investigation for two concepts to fabricate Josephson junctions with a rather uncommon negative critical current. Such devices exhibit an intrinsic phase slip of π between the electrodes, so they are also known as π junctions. Both studies go well beyond existing experiments and in one system a π junction is shown for the first time. All the thin film junctions are based on superconducting Nb electrodes. In a first approach, barriers made from Si and Fe were investigated with respect to the realisation of π junctions by spin-flip processes. The distribution of Fe in the Si matrix was varied from pure layers to disperse compounds. The systematic fabrication of alloy barriers was facilitated by the development of a novel timing-based combinatorial sputtering technique for planetary deposition systems. An orthogonal gradient approach allowed to create binary layer libraries with independent variations of thickness and composition. Second, Nb vertical stroke AlO x vertical stroke Nb vertical stroke Ni 60 Cu 40 vertical stroke Nb (SIsFS) double barrier junctions were experimentally studied for the occurrence of proximity effect induced order parameter oscillations. Detailed dependencies of the critical current density on the thickness of s-layer and F-layer were acquired and show a remarkable agreement to existing theoretical predictions. Especially a variation of

Facile fabrication and electrical investigations of nanostructured p-Si/n-TiO2 hetero-junction diode

Science.gov (United States)

Kumar, Arvind; Mondal, Sandip; Rao, K. S. R. Koteswara

2018-05-01

In this work, we have fabricated the nanostructured p-Si/n-TiO2 hetero-junction diode by using a facile spin-coating method. The XRD analysis suggests the presence of well crystalline anatase TiO2 film on Si with small grain size (˜16 nm). We have drawn the band alignment using Anderson model to understand the electrical transport across the junction. The current-voltage (J-V) characteristics analysis reveals the good rectification ratio (103 at ± 3 V) and slightly higher ideality factor (4.7) of our device. The interface states are responsible for the large ideality factor as Si/TiO2 form a dissimilar interface and possess a large number of dangling bonds. The study reveals the promises to be used Si/TiO2 diode as an alternative to the traditional p-n homo-junction diode, which typically require high budget.

Mechanically controllable break junctions for molecular electronics.

Science.gov (United States)

Xiang, Dong; Jeong, Hyunhak; Lee, Takhee; Mayer, Dirk

2013-09-20

A mechanically controllable break junction (MCBJ) represents a fundamental technique for the investigation of molecular electronic junctions, especially for the study of the electronic properties of single molecules. With unique advantages, the MCBJ technique has provided substantial insight into charge transport processes in molecules. In this review, the techniques for sample fabrication, operation and the various applications of MCBJs are introduced and the history, challenges and future of MCBJs are discussed. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Atomic-scaled characterization of graphene PN junctions

Science.gov (United States)

Zhou, Xiaodong; Wang, Dennis; Dadgar, Ali; Agnihotri, Pratik; Lee, Ji Ung; Reuter, Mark C.; Ross, Frances M.; Pasupathy, Abhay N.

Graphene p-n junctions are essential devices for studying relativistic Klein tunneling and the Veselago lensing effect in graphene. We have successfully fabricated graphene p-n junctions using both lithographically pre-patterned substrates and the stacking of vertical heterostructures. We then use our 4-probe STM system to characterize the junctions. The ability to carry out scanning electron microscopy (SEM) in our STM instrument is essential for us to locate and measure the junction interface. We obtain both the topography and dI/dV spectra at the junction area, from which we track the shift of the graphene chemical potential with position across the junction interface. This allows us to directly measure the spatial width and roughness of the junction and its potential barrier height. We will compare the junction properties of devices fabricated by the aforementioned two methods and discuss their effects on the performance as a Veselago lens.

Controlled fabrication of nano-scale double barrier magnetic tunnel junctions using focused ion beam milling method

International Nuclear Information System (INIS)

Wei, H.X.; Wang, T.X.; Zeng, Z.M.; Zhang, X.Q.; Zhao, J.; Han, X.F.

2006-01-01

The controlled fabrication method for nano-scale double barrier magnetic tunnel junctions (DBMTJs) with the layer structure of Ta(5)/Cu(10)/Ni 79 Fe 21 (5)/Ir 22 Mn 78 (12)/Co 6 Fe 2 B 2 (4)/Al(1) -oxide/Co 6 Fe 2 B 2 (6)/Al (1)-oxide/Co 6 Fe 2 B 2 (4)/Ir 22 Mn 78 (12)/Ni 79 Fe 21 (5)/Ta(5) (thickness unit: nm) was used. This method involved depositing thin multi-layer stacks by sputtering system, and depositing a Pt nano-pillar using a focused ion beam which acted both as a top contact and as an etching mask. The advantages of this process over the traditional process using e-beam and optical lithography in that it involve only few processing steps, e.g. it does not involve any lift-off steps. In order to evaluate the nanofabrication techniques, the DBMTJs with the dimensions of 200 nmx400 nm, 200 nmx200 nm nano-scale were prepared and their R-H, I-V characteristics were measured.

Fabrication of photovoltaic laser energy converterby MBE

Science.gov (United States)

Lu, Hamilton; Wang, Scott; Chan, W. S.

1993-01-01

A laser-energy converter, fabricated by molecular beam epitaxy (MBE), was developed. This converter is a stack of vertical p-n junctions connected in series by low-resistivity, lattice matched CoSi2 layers to achieve a high conversion efficiency. Special high-temperature electron-beam (e-beam) sources were developed especially for the MBE growth of the junctions and CoSi2 layers. Making use of the small (greater than 1.2 percent) lattice mismatch between CoSi2 and Si layers, high-quality and pinhole-free epilayers were achieved, providing a capability of fabricating all the junctions and connecting layers as a single growth process with one pumpdown. Well-defined multiple p-n junctions connected by CoSi2 layers were accomplished by employing a low growth temperature (greater than 700 C) and a low growth rate (less than 0.5 microns/hour). Producing negligible interdiffusion, the low growth temperature and rate also produced negligible pinholes in the CoSi2 layers. For the first time, a stack of three p-n junctions connected by two 10(exp -5) Ohm-cm CoSi2 layers was achieved, meeting the high conversion efficiency requirement. This process can now be optimized for high growth rate to form a practical converter with 10 p-n junctions in the stack.

E-cadherin junction formation involves an active kinetic nucleation process

Science.gov (United States)

Biswas, Kabir H.; Hartman, Kevin L.; Yu, Cheng-han; Harrison, Oliver J.; Song, Hang; Smith, Adam W.; Huang, William Y. C.; Lin, Wan-Chen; Guo, Zhenhuan; Padmanabhan, Anup; Troyanovsky, Sergey M.; Dustin, Michael L.; Shapiro, Lawrence; Honig, Barry; Zaidel-Bar, Ronen; Groves, Jay T.

2015-01-01

Epithelial (E)-cadherin-mediated cell−cell junctions play important roles in the development and maintenance of tissue structure in multicellular organisms. E-cadherin adhesion is thus a key element of the cellular microenvironment that provides both mechanical and biochemical signaling inputs. Here, we report in vitro reconstitution of junction-like structures between native E-cadherin in living cells and the extracellular domain of E-cadherin (E-cad-ECD) in a supported membrane. Junction formation in this hybrid live cell-supported membrane configuration requires both active processes within the living cell and a supported membrane with low E-cad-ECD mobility. The hybrid junctions recruit α-catenin and exhibit remodeled cortical actin. Observations suggest that the initial stages of junction formation in this hybrid system depend on the trans but not the cis interactions between E-cadherin molecules, and proceed via a nucleation process in which protrusion and retraction of filopodia play a key role. PMID:26290581

Small area silicon diffused junction x-ray detectors

International Nuclear Information System (INIS)

Walton, J.T.; Pehl, R.H.; Larsh, A.E.

1981-10-01

The low temperature performance of silicon diffused junction detectors in the measurement of low energy x-rays is reported. The detectors have an area of 0.04 cm 2 and a thickness of 100 μm. The spectral resolutions of these detectors were found to be in close agreement with expected values indicating that the defects introduced by the high temperature processing required in the device fabrication were not deleteriously affecting the detection of low energy x-rays. Device performance over a temperature range of 77 to 150 0 K is given. These detectors were designed to detect low energy x-rays in the presence of minimum ionizing electrons. The successful application of silicon diffused junction technology to x-ray detector fabrication may facilitate the development of other novel silicon x-ray detector designs

Small area silicon diffused junction X-ray detectors

Science.gov (United States)

Walton, J. T.; Pehl, R. H.; Larsh, A. E.

1982-01-01

The low-temperature performance of silicon diffused junction detectors in the measurement of low energy X-rays is reported. The detectors have an area of 0.04 sq cm and a thickness of 100 microns. The spectral resolutions of these detectors were found to be in close agreement with expected values, indicating that the defects introduced by the high-temperature processing required in the device fabrication were not deleteriously affecting the detection of low-energy X-rays. Device performance over a temperature range of 77 K to 150 K is given. These detectors were designed to detect low-energy X-rays in the presence of minimum ionizing electrons. The successful application of silicon-diffused junction technology to X-ray detector fabrication may facilitate the development of other novel silicon X-ray detector designs.

High-Rate Fabrication of a-Si-Based Thin-Film Solar Cells Using Large-Area VHF PECVD Processes

Energy Technology Data Exchange (ETDEWEB)

Deng, Xunming [University of Toledo; Fan, Qi Hua

2011-12-31

The University of Toledo (UT), working in concert with it’s a-Si-based PV industry partner Xunlight Corporation (Xunlight), has conducted a comprehensive study to develop a large-area (3ft x 3ft) VHF PECVD system for high rate uniform fabrication of silicon absorber layers, and the large-area VHF PECVD processes to achieve high performance a-Si/a-SiGe or a-Si/nc-Si tandem junction solar cells during the period of July 1, 2008 to Dec. 31, 2011, under DOE Award No. DE-FG36-08GO18073. The project had two primary goals: (i) to develop and improve a large area (3 ft × 3 ft) VHF PECVD system for high rate fabrication of > = 8 Å/s a-Si and >= 20 Å/s nc-Si or 4 Å/s a-SiGe absorber layers with high uniformity in film thicknesses and in material structures. (ii) to develop and optimize the large-area VHF PECVD processes to achieve high-performance a-Si/nc-Si or a-Si/a-SiGe tandem-junction solar cells with >= 10% stable efficiency. Our work has met the goals and is summarized in “Accomplishments versus goals and objectives”.

Functional Molecular Junctions Derived from Double Self-Assembled Monolayers.

Science.gov (United States)

Seo, Sohyeon; Hwang, Eunhee; Cho, Yunhee; Lee, Junghyun; Lee, Hyoyoung

2017-09-25

Information processing using molecular junctions is becoming more important as devices are miniaturized to the nanoscale. Herein, we report functional molecular junctions derived from double self-assembled monolayers (SAMs) intercalated between soft graphene electrodes. Newly assembled molecular junctions are fabricated by placing a molecular SAM/(top) electrode on another molecular SAM/(bottom) electrode by using a contact-assembly technique. Double SAMs can provide tunneling conjugation across the van der Waals gap between the terminals of each monolayer and exhibit new electrical functions. Robust contact-assembled molecular junctions can act as platforms for the development of equivalent contact molecular junctions between top and bottom electrodes, which can be applied independently to different kinds of molecules to enhance either the structural complexity or the assembly properties of molecules. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Fluoride barriers in Nb/Pb Josephson junctions

Science.gov (United States)

Asano, H.; Tanabe, K.; Michikami, O.; Igarashi, M.; Beasley, M. R.

1985-03-01

Josephson tunnel junctions are fabricated using a new class of artificial barriers, metal fluorides (Al fluoride and Zr fluoride). These fluoride barriers are deposited on the surface of a Nb base electrode, which are previously cleaned using a CF4 cleaning process, and covered by a Pb counterelectrode. The junctions with both Al fluoride and Zr fluoride barriers exhibit good tunneling characteristics and have low specific capacitance. In the case of Zr fluoride, it is observed that reasonable resistances are obtained even at thickness greater than 100 A. This phenomenon might be explained by tunneling via localized states in Zr fluoride.

Investigation of SFQ integrated circuits using Nb fabrication technology

International Nuclear Information System (INIS)

Numata, H.; Tanaka, M.; Kitagawa, Y.; Tahara, S.

1999-01-01

In NEC's standard process, the minimum junction size is 2 μm and the critical current density (J C ) is 2.5 kA cm -2 . In the process, i-line stepper lithography and reactive ion etching with SF 6 gas are used and the standard deviation (σ) of the critical current (I C ) was 0.9% for the 2 μm junctions. This junction uniformity enables integration of more than 10M junctions if an I C variation of ±10% permits correct circuit operation. A 512-bit shift register was designed and fabricated by our standard process. Correct 512-bit delay operation was obtained. These results are promising for the large-scale integration of single flux quantum circuits. (author)

Au nanowire junction breakup through surface atom diffusion

Science.gov (United States)

Vigonski, Simon; Jansson, Ville; Vlassov, Sergei; Polyakov, Boris; Baibuz, Ekaterina; Oras, Sven; Aabloo, Alvo; Djurabekova, Flyura; Zadin, Vahur

2018-01-01

Metallic nanowires are known to break into shorter fragments due to the Rayleigh instability mechanism. This process is strongly accelerated at elevated temperatures and can completely hinder the functioning of nanowire-based devices like e.g. transparent conductive and flexible coatings. At the same time, arranged gold nanodots have important applications in electrochemical sensors. In this paper we perform a series of annealing experiments of gold and silver nanowires and nanowire junctions at fixed temperatures 473, 673, 873 and 973 K (200 °C, 400 °C, 600 °C and 700 °C) during a time period of 10 min. We show that nanowires are especially prone to fragmentation around junctions and crossing points even at comparatively low temperatures. The fragmentation process is highly temperature dependent and the junction region breaks up at a lower temperature than a single nanowire. We develop a gold parametrization for kinetic Monte Carlo simulations and demonstrate the surface diffusion origin of the nanowire junction fragmentation. We show that nanowire fragmentation starts at the junctions with high reliability and propose that aligning nanowires in a regular grid could be used as a technique for fabricating arrays of nanodots.

MoRe-based and NbN-based tunnel junctions and their characteristics

International Nuclear Information System (INIS)

Shaternik, V.E.; Noskov, V.L.; Chubatyy, V.V.; Larkin, S.Yu.; Sizontov, V.M.; Miroshnikov, A.M.; Karmazin, A.A.

2007-01-01

Full text: Perspective [1] Josephson Mo-Re alloy-oxide-Pb, Mo-Re alloy-normal metal-oxide-Pb and Mo-Re alloy-normal metal-oxide- normal metal-Mo-Re alloy junctions have been fabricated and investigated. Thin (∼50-100 nm) MoRe superconducting films are deposited on Al 2 O 3 substrates by using a dc magnetron sputtering of MoRe target. Normal metal (Sn, Al) thin films are deposited on the MoRe films surfaces by thermal evaporation of metals in vacuum and oxidized to fabricate junctions oxide barriers. Quasiparticle I-V curves of the fabricated junctions were measured in wide range of voltages. To investigate a transparency spread for the fabricated junctions barriers the computer simulation of the measured quasiparticle I-V curves have been done in framework of the model of multiple Andreev reflections in double-barrier junction interfaces. It's demonstrated the investigated junctions can be described as highly asymmetric double-barrier Josephson junctions with great difference between the two barrier transparencies [2,3]. The result of the comparison of experimental quasiparticle I-V curves and calculated ones is proposed and discussed. Results of computer simulation of quasiparticles I-V curves of NbN-based junctions are presented and discussed. Also I-V curves of the fabricated junctions have been measured under microwave irradiation with 60 GHz frequency , clear Shapiro steps in the measured I-V curves were observed and discussed. (authors)

Fabrication of magnetic tunnel junctions with epitaxial and textured ferromagnetic layers

Science.gov (United States)

Chang, Y. Austin; Yang, Jianhua Joshua

2008-11-11

This invention relates to magnetic tunnel junctions and methods for making the magnetic tunnel junctions. The magnetic tunnel junctions include a tunnel barrier oxide layer sandwiched between two ferromagnetic layers both of which are epitaxial or textured with respect to the underlying substrate upon which the magnetic tunnel junctions are grown. The magnetic tunnel junctions provide improved magnetic properties, sharper interfaces and few defects.

Towards ferromagnet/superconductor junctions on graphene

International Nuclear Information System (INIS)

Pakkayil, Shijin Babu

2015-01-01

to contact graphene or any other semiconductor with a ferromagnet has to overcome one important problem known as ''Conductance mismatch''. To solve the conductance mismatch problem, which had stalled the injection of spin polarised electrons to a semiconductor for many years, in our fabrication method, a thin Al 2 O 3 layer is introduced between the ferromagnet and graphene. The insulating layer is grown using Atomic layer deposition (ALD) with the help of a thin Ti seed layer. Unlike the previously reported method, which treats the entire graphene flake with PTCA (3,4,9,10-perylene tetracarboxylic acid) prior to the ALD process, no such chemical treatment occurs in our fabrication process. Also, the yield of successful devices are higher than the highest yield reported so far (∝30%). The later part of the thesis discusses how this fabrication recipe is further developed to contact graphene with superconducting contacts to produce ferromagnet/superconductor junctions on graphene. The successful spin valve devices produced using the new fabrication process are discussed along with a simple theory of spin transport in graphene. Some of the spin valve devices discussed are fabricated with the help of Ti seed layer (for growing Al 2 O 3 ) and some of them are without. Also, measurement results on devices with varying number of ALD cycles are shown and discussed which helps to decide the optimum number of ALD cycles needed for the best yield and performance. The devices made using Ti seed layer shows better consistency in terms of contact resistances and device performance. Also, ferromagnetic contacts from one device showed perfect tunnel barrier behaviour. Chapter 5 mainly discusses the results of the measurements done on a device which has 4 ferromagnetic contacts and 4 superconducting contacts arranged in a fashion that it forms multiple ferromagnet/superconductor junctions on graphene. Lateral spin valves and Josephson junctions are also part of

Towards ferromagnet/superconductor junctions on graphene

Energy Technology Data Exchange (ETDEWEB)

Pakkayil, Shijin Babu

2015-07-01

to contact graphene or any other semiconductor with a ferromagnet has to overcome one important problem known as ''Conductance mismatch''. To solve the conductance mismatch problem, which had stalled the injection of spin polarised electrons to a semiconductor for many years, in our fabrication method, a thin Al{sub 2}O{sub 3} layer is introduced between the ferromagnet and graphene. The insulating layer is grown using Atomic layer deposition (ALD) with the help of a thin Ti seed layer. Unlike the previously reported method, which treats the entire graphene flake with PTCA (3,4,9,10-perylene tetracarboxylic acid) prior to the ALD process, no such chemical treatment occurs in our fabrication process. Also, the yield of successful devices are higher than the highest yield reported so far (∝30%). The later part of the thesis discusses how this fabrication recipe is further developed to contact graphene with superconducting contacts to produce ferromagnet/superconductor junctions on graphene. The successful spin valve devices produced using the new fabrication process are discussed along with a simple theory of spin transport in graphene. Some of the spin valve devices discussed are fabricated with the help of Ti seed layer (for growing Al{sub 2}O{sub 3}) and some of them are without. Also, measurement results on devices with varying number of ALD cycles are shown and discussed which helps to decide the optimum number of ALD cycles needed for the best yield and performance. The devices made using Ti seed layer shows better consistency in terms of contact resistances and device performance. Also, ferromagnetic contacts from one device showed perfect tunnel barrier behaviour. Chapter 5 mainly discusses the results of the measurements done on a device which has 4 ferromagnetic contacts and 4 superconducting contacts arranged in a fashion that it forms multiple ferromagnet/superconductor junctions on graphene. Lateral spin valves and Josephson junctions

Flexible MgO Barrier Magnetic Tunnel Junctions.

Science.gov (United States)

Loong, Li Ming; Lee, Wonho; Qiu, Xuepeng; Yang, Ping; Kawai, Hiroyo; Saeys, Mark; Ahn, Jong-Hyun; Yang, Hyunsoo

2016-07-01

Flexible MgO barrier magnetic tunnel junction (MTJ) devices are fabricated using a transfer printing process. The flexible MTJ devices yield significantly enhanced tunneling magnetoresistance of ≈300% and improved abruptness of switching, as residual strain in the MTJ structure is released during the transfer process. This approach could be useful for flexible electronic systems that require high-performance memory components. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

LTS junction technology for RSFQ and qubit circuit applications

International Nuclear Information System (INIS)

Buchholz, F.-Im.; Balashov, D.V.; Dolata, R.; Hagedorn, D.; Khabipov, M.I.; Kohlmann, J.; Zorin, A.B.; Niemeyer, J.

2006-01-01

The potentials of LTS junction technology and electronics offer innovative solutions for the processing of quantum information in RSFQ and qubit circuits. We discuss forthcoming approaches based on standard SIS technology and addressed to the development of new superconducting device concepts. The challenging problem of reducing back action noise of the RSFQ circuits deteriorating coherent properties of the qubit is currently solved by implementing Josephson junctions with non-linear shunts based on LTS SIS-SIN technology. Upgraded NbAlO x trilayer technology enables the fabrication of high-quality mesoscopic Josephson junction transistors down to the nanometer range suitable for a qubit-operation regime. As applications, circuit concepts are presented which combine superconducting devices of different nature

Electron-beam damaged high-temperature superconductor Josephson junctions

International Nuclear Information System (INIS)

Pauza, A.J.; Booij, W.E.; Herrmann, K.; Moore, D.F.; Blamire, M.G.; Rudman, D.A.; Vale, L.R.

1997-01-01

Results are presented on the fabrication and characterization of high critical temperature Josephson junctions in thin films of YBa 2 Cu 3 O 7-δ produced by the process of focused electron-beam irradiation using 350 keV electrons. The junctions so produced have uniform spatial current densities, can be described in terms of the resistive shunted junction model, and their current densities can be tailored for a given operating temperature. The physical properties of the damaged barrier can be described as a superconducting material of either reduced or zero critical temperature (T c ), which has a length of ∼15nm. The T c reduction is caused primarily by oxygen Frenkel defects in the Cu - O planes. The large beam currents used in the fabrication of the junctions mean that the extent of the barrier is limited by the incident electron-beam diameter, rather than by scattering within the film. The properties of the barrier can be calculated using a superconductor/normal/superconductor (SNS) junction model with no boundary resistance. From the SNS model, we can predict the scaling of the critical current resistance (I c R n ) product and gain insight into the factors controlling the junction properties, T c , and reproducibility. From the measured I c R n scaling data, we can predict the I c R n product of a junction at a given operating temperature with a given current density. I c R n products of ∼2mV can be achieved at 4.2 K. The reproducibility of several junctions in a number of samples can be characterized by the ratio of the maximum-to-minimum critical currents on the same substrate of less than 1.4. Stability over several months has been demonstrated at room and refrigerator temperatures (297 and 281 K) for junctions that have been initially over damaged and then annealed at temperatures ∼380K. (Abstract Truncated)

Large-Area, Multi-Junction, Epitaxial Lift-Off Solar Cells with Backside Contacts, Phase I

Data.gov (United States)

National Aeronautics and Space Administration — In this Phase I program we propose to develop an innovative fabrication process to introduce backside contacts to MicroLink Devices' large-area, multi-junction...

Laser processing for bevel termination of high voltage pn junction in SiC

International Nuclear Information System (INIS)

Kubiak, A; Ruta, Ł; Rosowski, A; French, P

2016-01-01

Proper edge termination of the p-n junction in silicon carbide is a key requirement in the fabrication of discrete devices able to withstand high voltages in reverse polarization. Due to the hardness of SiC the creation of the bevel termination remains difficult using mechanical machining. The use of laser beam sources with medium wavelength (532 nm) gives new possibilities in the machining of the silicon carbide. The paper presents the fabrication of the bevel termination structure in SiC using a green DPSS laser equipped with scanner and dedicated rotating sample holder. Characterization of the resulting structures proves the high potential of the proposed approach. (paper)

Design of thin InGaAsN(Sb) n-i-p junctions for use in four-junction concentrating photovoltaic devices

Science.gov (United States)

Wilkins, Matthew M.; Gupta, James; Jaouad, Abdelatif; Bouzazi, Boussairi; Fafard, Simon; Boucherif, Abderraouf; Valdivia, Christopher E.; Arès, Richard; Aimez, Vincent; Schriemer, Henry P.; Hinzer, Karin

2017-04-01

Four-junction solar cells for space and terrestrial applications require a junction with a band gap of ˜1 eV for optimal performance. InGaAsN or InGaAsN(Sb) dilute nitride junctions have been demonstrated for this purpose, but in achieving the 14 mA/cm2 short-circuit current needed to match typical GaInP and GaAs junctions, the open-circuit voltage (VOC) and fill factor of these junctions are compromised. In multijunction devices incorporating materials with short diffusion lengths, we study the use of thin junctions to minimize sensitivity to varying material quality and ensure adequate transmission into lower junctions. An n-i-p device with 0.65-μm absorber thickness has sufficient short-circuit current, however, it relies less heavily on field-aided collection than a device with a 1-μm absorber. Our standard cell fabrication process, which includes a rapid thermal anneal of the contacts, yields a significant improvement in diffusion length and device performance. By optimizing a four-junction cell around a smaller 1-sun short-circuit current of 12.5 mA/cm2, we produced an InGaAsN(Sb) junction with open-circuit voltage of 0.44 V at 1000 suns (1 sun=100 mW/cm2), diode ideality factor of 1.4, and sufficient light transmission to allow >12.5 mA/cm2 in all four subcells.

Cascade reactor: granule fabrication processes

International Nuclear Information System (INIS)

Erlandson, O.D.; Winkler, E.O.; Maya, I.; Pitts, J.H.

1985-01-01

A key feature of Cascade is the granular blanket. Of the many blanket material options open to Cascade, fabrication of Li 2 O granules was felt to offer the greatest challenge. The authors explored available methods for initial Li 2 O granule fabrication. They identified three cost-effective processes for fabricating Li 2 O granules: the VSM drop-melt furnace process, which is based on melting and spheroidizing irregularly shaped Li 2 O feed granules; the LiOH process, which spheroidizes liquefied LiOH and uses GA Technologies' sphere-forming procedures; and the Li 2 CO 3 sol-gel process, used for making spherical fuel particles for the high-temperature gas-cooled reactor (HTGR). Each process is described below

Josephson junctions with ferromagnetic interlayer

International Nuclear Information System (INIS)

Wild, Georg Hermann

2012-01-01

We report on the fabrication of superconductor/insulator/ferromagnetic metal/superconductor (Nb/AlO x /Pd 0.82 Ni 0.18 /Nb) Josephson junctions (SIFS JJs) with high critical current densities, large normal resistance times area products, and high quality factors. For these junctions, a transition from 0- to π-coupling is observed for a thickness d F =6 nm of the ferromagnetic Pd 0.82 Ni 0.18 interlayer. The magnetic field dependence of the critical current of the junctions demonstrates good spatial homogeneity of the tunneling barrier and ferromagnetic interlayer. Magnetic characterization shows that the Pd 0.82 Ni 0.18 has an out-of-plane anisotropy and large saturation magnetization indicating negligible dead layers at the interfaces. A careful analysis of Fiske modes up to about 400 GHz provides valuable information on the junction quality factor and the relevant damping mechanisms. Whereas losses due to quasiparticle tunneling dominate at low frequencies, at high frequencies the damping is explained by the finite surface resistance of the junction electrodes. High quality factors of up to 30 around 200 GHz have been achieved. They allow to study the junction dynamics, in particular the switching probability from the zero-voltage into the voltage state with and without microwave irradiation. The experiments with microwave irradiation are well explained within semi-classical models and numerical simulations. In contrast, at mK temperature the switching dynamics without applied microwaves clearly shows secondary quantum effects. Here, we could observe for the first time macroscopic quantum tunneling in Josephson junctions with a ferromagnetic interlayer. This observation excludes fluctuations of the critical current as a consequence of an unstable magnetic domain structure of the ferromagnetic interlayer and affirms the suitability of SIFS Josephson junctions for quantum information processing.

Josephson junctions with ferromagnetic interlayer

Energy Technology Data Exchange (ETDEWEB)

Wild, Georg Hermann

2012-03-04

We report on the fabrication of superconductor/insulator/ferromagnetic metal/superconductor (Nb/AlO{sub x}/Pd{sub 0.82}Ni{sub 0.18}/Nb) Josephson junctions (SIFS JJs) with high critical current densities, large normal resistance times area products, and high quality factors. For these junctions, a transition from 0- to {pi}-coupling is observed for a thickness d{sub F}=6 nm of the ferromagnetic Pd{sub 0.82}Ni{sub 0.18} interlayer. The magnetic field dependence of the critical current of the junctions demonstrates good spatial homogeneity of the tunneling barrier and ferromagnetic interlayer. Magnetic characterization shows that the Pd{sub 0.82}Ni{sub 0.18} has an out-of-plane anisotropy and large saturation magnetization indicating negligible dead layers at the interfaces. A careful analysis of Fiske modes up to about 400 GHz provides valuable information on the junction quality factor and the relevant damping mechanisms. Whereas losses due to quasiparticle tunneling dominate at low frequencies, at high frequencies the damping is explained by the finite surface resistance of the junction electrodes. High quality factors of up to 30 around 200 GHz have been achieved. They allow to study the junction dynamics, in particular the switching probability from the zero-voltage into the voltage state with and without microwave irradiation. The experiments with microwave irradiation are well explained within semi-classical models and numerical simulations. In contrast, at mK temperature the switching dynamics without applied microwaves clearly shows secondary quantum effects. Here, we could observe for the first time macroscopic quantum tunneling in Josephson junctions with a ferromagnetic interlayer. This observation excludes fluctuations of the critical current as a consequence of an unstable magnetic domain structure of the ferromagnetic interlayer and affirms the suitability of SIFS Josephson junctions for quantum information processing.

Flicker (1/f) noise in tunnel junction DC SQUIDS

International Nuclear Information System (INIS)

Koch, R.H.; Clarke, J.; Goubau, W.M.; Martinis, J.M.; Pegrum, C.M.; Van Harlingen, D.J.

1983-01-01

We have measured the spectral density of the 1/f voltage noise in current-biased resistively shunted Josephson tunnel junctions and dc SQUIDs. A theory in which fluctuations in the temperature give rise to fluctuations in the critical current and hence in the voltage predicts the magnitude of the noise quite accurately for junctions with areas of about 2 x 10 4 μm 2 , but significantly overestimates the noise for junctions with areas of about 6 μm 2 . DC SQUIDs fabricated from these two types of junctions exhibit substantially more 1/f voltage noise than would be predicted from a model in which the noise arises from critical current fluctuations in the junctions. This result was confirmed by an experiment involving two different bias current and flux modulation schemes, which demonstrated that the predominant 1/f voltage noise arises not from critical current fluctuations, but from some unknown source that can be regarded as an apparent 1/f flux noise. Measurements on five different configurations of dc SQUIDs fabricated with thin-film tunnel junctions and with widely varying areas, inductances, and junction capacitances show that the spectral density of the 1/f equivalent flux noise is roughtly constant, within a factor of three of (10 -10 /f)phi 2 0 Hz -1 . It is emphasized that 1/f flux noise may not be the predominant source of 1/f noise in SQUIDS fabricated with other technologies

NbCN Josephson junctions with AlN barriers

International Nuclear Information System (INIS)

Thomasson, S.L.; Murduck, J.M.; Chan, H.

1991-01-01

This paper reports on niobium carbonitride (NbCN) Josephson circuits which operate over a wider temperature range than either niobium or niobium nitride circuits. Higher operating temperature places NbCN technology more comfortably within the range of closed cycle refrigerators, a key factor in aerospace applications. We have fabricated tunnel junctions from NbCN films with transition temperatures up to 18 Kelvin. High quality NbCN tunnel junction fabrication generally requires low stress films with roughness less than the barrier thickness (∼20 Angstrom). We have developed scanning tunneling microscopy as a tool for measuring and optimizing film smoothness. Junctions formed in situ with AIN tunneling barriers show reproducible I-V characteristics

Measurement of noise in YBCO bi-crystal junctions

International Nuclear Information System (INIS)

Kuznik, J.; Hao, L.; Macfarlane, J.C.; Pegrum, C.M.; Fischer, G.M.; Mygind, J.; Pedersen, N.F.; Beck, A.; Gross, R.

1993-01-01

This paper describes collaborative work between three institutions as part of an ESPRIT programme to fabricate and characterise grain-boundary junctions. Bi-crystal junctions were fabricated at Tuebingen on SrTiO 3 substrates with a 24 misorientation angle and a-b tilt. 200nm of c-axis YBCO was sputter-deposited using a hollow-cathode magnetron, and the films patterned with optical lithography and Ar ion beam etching (3). For test purposes junctions with a range of sizes were made, with widths between 4 and 20μm. These have been characterised for noise properties at 0.3 - 1kHz and 60kHz at Strathclyde, and at 70GHz at Lyngby. (orig.)

Rapid wasted-free microfluidic fabrication based on ink-jet approach for microfluidic sensing applications

Science.gov (United States)

Jarujareet, Ungkarn; Amarit, Rattasart; Sumriddetchkajorn, Sarun

2016-11-01

Realizing that current microfluidic chip fabrication techniques are time consuming and labor intensive as well as always have material leftover after chip fabrication, this research work proposes an innovative approach for rapid microfluidic chip production. The key idea relies on a combination of a widely-used inkjet printing method and a heat-based polymer curing technique with an electronic-mechanical control, thus eliminating the need of masking and molds compared to typical microfluidic fabrication processes. In addition, as the appropriate amount of polymer is utilized during printing, there is much less amount of material wasted. Our inkjet-based microfluidic printer can print out the desired microfluidic chip pattern directly onto a heated glass surface, where the printed polymer is suddenly cured. Our proof-of-concept demonstration for widely-used single-flow channel, Y-junction, and T-junction microfluidic chips shows that the whole microfluidic chip fabrication process requires only 3 steps with a fabrication time of 6 minutes.

Self-heating in Josephson junction chains. New insight from old circuits

Energy Technology Data Exchange (ETDEWEB)

Cole, Jared [Chemical and Quantum Physics, School of Applied Sciences, RMIT University, Melbourne, Victoria 3001 (Australia); Marthaler, Michael [Institute fuer Theoretische Festkoerperphysik, Karlsruhe Institute of Technology, 76128 Karlsruhe (Germany); Duty, Timothy [Centre for Engineered Quantum Systems (EQuS), School of Physics, University of New South Wales, Sydney, New South Wales 2052 (Australia)

2016-07-01

The conduction properties of arrays of Josephson junctions are been studied for decades, yet the experimental results never really match the predictions of the idealised theoretical models. Many reasons have been given for this, including imperfections in the measurement, in the fabrication process or in the theoretical models used. Recently, using a combination of systematic numerical and experimental studies, the gap between theory and experiment is closing. As an example of this, we discuss the role of self-heating in the transport properties of one-dimensional Josephson junction chains. We show tantalising experimental measurements and how these can be compared to various theoretical models for the self-heating processes within the chains.

Electrochemically assisted mechanically controllable break junction studies on the stacking configurations of oligo(phenylene ethynylene)s molecular junctions

International Nuclear Information System (INIS)

Zheng, Jue-Ting; Yan, Run-Wen; Tian, Jing-Hua; Liu, Jun-Yang; Pei, Lin-Qi; Wu, De-Yin; Dai, Ke; Yang, Yang; Jin, Shan

2016-01-01

Highlights: • I-V characteristics of a series of oligo(phenylene ethynylene)s molecular junctions were measured. • Conductance values were found to be dependent on molecular length and substituent group. • The measured low conductance values were explained by theoretical calculations. • EC-MCBJ is feasible to fabricate and characterize molecular junctions. - Abstract: We demonstrate an electrochemically assisted mechanically controllable break junction (EC-MCBJ) approach for current-voltage characteristic (I-V curve) measurements of metal/molecule/metal junctions. A series of oligo(phenylene ethynylene)s compounds (OPEs), including those involving electron withdrawing substituent group and different backbone lengths, had been successfully designed, synthesized, and placed onto the fabricated nanogap to form molecular junctions. The observed evolution in the measured conductances of OPEs indicates that there is a dependence of conductance on molecular length and substituent group. Compared with those extracted from conductance histogram construction, the conductances of OPEs measured from I-V curves are considerably lower. Based on the transmission spectra of OPEs that calculated by density functional theory (DFT) combined with non-equilibrium Green’s function (NEGF) method, this difference was attributed to our distinct experimental operation, which may give rise to a stacking configuration of two OPE molecules.

Using ion irradiation to make high-Tc Josephson junctions

International Nuclear Information System (INIS)

Bergeal, N.; Lesueur, J.; Sirena, M.; Faini, G.; Aprili, M.; Contour, J. P.; Leridon, B.

2007-01-01

In this article we describe the effect of ion irradiation on high-T c superconductor thin film and its interest for the fabrication of Josephson junctions. In particular, we show that these alternative techniques allow to go beyond most of the limitations encountered in standard junction fabrication methods, both in the case of fundamental and technological purposes. Two different geometries are presented: a planar one using a single high-T c film and a mesa one defined in a trilayer structure

Building memristive and radiation hardness TiO{sub 2}-based junctions

Energy Technology Data Exchange (ETDEWEB)

Ghenzi, N., E-mail: n.ghenzi@gmail.com [Gerencia de Investigación y Aplicaciones, Comisión Nacional de Energía Atómica (Argentina); Rubi, D. [Gerencia de Investigación y Aplicaciones, Comisión Nacional de Energía Atómica (Argentina); ECyT, UNSAM, Martín de Irigoyen 3100, 1650 San Martín, Bs As (Argentina); Consejo Nacional de Investigaciones Científicas y Técnicas (CONICET) (Argentina); Mangano, E.; Gimenez, G. [Instituto Nacional de Tecnología Industrial (INTI) (Argentina); Lell, J. [Gerencia de Investigación y Aplicaciones, Comisión Nacional de Energía Atómica (Argentina); Zelcer, A. [Gerencia Química, Comisión Nacional de Energía Atómica (Argentina); ECyT, UNSAM, Martín de Irigoyen 3100, 1650 San Martín, Bs As (Argentina); Stoliar, P. [ECyT, UNSAM, Martín de Irigoyen 3100, 1650 San Martín, Bs As (Argentina); IMN, Université de Nantes, CNRS, 2 rue de la Houssinière, BP 32229, 44322 Nantes (France); and others

2014-01-01

We study micro-scale TiO{sub 2} junctions that are suitable to be used as resistive random-access memory nonvolatile devices with radiation hardness memristive properties. The fabrication and structural and electrical characterization of the junctions are presented. We obtained a retentivity of 10{sup 5} s, an endurance of 10{sup 4} cycles and reliable switching with short electrical pulses (time-width below 10 ns). Additionally, the devices were exposed to 25 MeV oxygen ions. Then, we performed electrical measurements comparing pristine and irradiated devices in order to check the feasibility of using these junctions as memory elements with memristive and radiation hardness properties. - Highlights: • We fabricated radiation hardness memristive metal insulator metal junctions. • We characterized the structural properties of the devices. • We showed the feasibility of the junctions as a non-volatile memory.

Innovative architecture design for high performance organic and hybrid multi-junction solar cells

Science.gov (United States)

Li, Ning; Spyropoulos, George D.; Brabec, Christoph J.

2017-08-01

The multi-junction concept is especially attractive for the photovoltaic (PV) research community owing to its potential to overcome the Schockley-Queisser limit of single-junction solar cells. Tremendous research interests are now focused on the development of high-performance absorbers and novel device architectures for emerging PV technologies, such as organic and perovskite PVs. It has been predicted that the multi-junction concept is able to boost the organic and perovskite PV technologies approaching the 20% and 30% benchmarks, respectively, showing a bright future of commercialization of the emerging PV technologies. In this contribution, we will demonstrate innovative architecture design for solution-processed, highly functional organic and hybrid multi-junction solar cells. A simple but elegant approach to fabricating organic and hybrid multi-junction solar cells will be introduced. By laminating single organic/hybrid solar cells together through an intermediate layer, the manufacturing cost and complexity of large-scale multi-junction solar cells can be significantly reduced. This smart approach to balancing the photocurrents as well as open circuit voltages in multi-junction solar cells will be demonstrated and discussed in detail.

Room-temperature current blockade in atomically defined single-cluster junctions

Science.gov (United States)

Lovat, Giacomo; Choi, Bonnie; Paley, Daniel W.; Steigerwald, Michael L.; Venkataraman, Latha; Roy, Xavier

2017-11-01

Fabricating nanoscopic devices capable of manipulating and processing single units of charge is an essential step towards creating functional devices where quantum effects dominate transport characteristics. The archetypal single-electron transistor comprises a small conducting or semiconducting island separated from two metallic reservoirs by insulating barriers. By enabling the transfer of a well-defined number of charge carriers between the island and the reservoirs, such a device may enable discrete single-electron operations. Here, we describe a single-molecule junction comprising a redox-active, atomically precise cobalt chalcogenide cluster wired between two nanoscopic electrodes. We observe current blockade at room temperature in thousands of single-cluster junctions. Below a threshold voltage, charge transfer across the junction is suppressed. The device is turned on when the temporary occupation of the core states by a transiting carrier is energetically enabled, resulting in a sequential tunnelling process and an increase in current by a factor of ∼600. We perform in situ and ex situ cyclic voltammetry as well as density functional theory calculations to unveil a two-step process mediated by an orbital localized on the core of the cluster in which charge carriers reside before tunnelling to the collector reservoir. As the bias window of the junction is opened wide enough to include one of the cluster frontier orbitals, the current blockade is lifted and charge carriers can tunnel sequentially across the junction.

A15 Nb-Sn tunnel junction fabrication and properties

International Nuclear Information System (INIS)

Rudman, D.A.; Hellman, F.; Hammond, R.H.; Beasley, M.R.

1984-01-01

We have investigated the deposition conditions necessary to produce optimized films of A15 Nb-Sn (19--26 at. % Sn) by electron-beam codeposition. Reliable high-quality superconducting tunnel junctions can be made on this material by using an oxidized-amorphous silicon overlayer as the tunneling barrier and lead as the counter-electrode. These junctions have been used both as a tool for materials diagnosis and as a probe of the superconducting properties (critical temperature and gap) of the films. Careful control of the substrate temperature during the growth of the films has proved critical to obtain homogeneous samples. When the substrate temperature is properly stabilized, stoichiometric Nb 3 Sn is found to be relatively insensitive to the deposition temperature and conditions. In contrast, the properties of the off-stoichiometry (Sn-poor) material depend strongly on the deposition temperature. For this Sn-poor material the ratio 2Δ/kT/sub c/ at a given composition increases with increasing deposition temperature. This change appears to be due to an increase in the gap at the surface of the material (as measured by tunneling) relative to the critical temperature of the bulk. All the tunnel junctions exhibit some persistent nonidealities in their current-voltage characteristics that are qualitatively insensitive to composition or deposition conditions. In particular, the junctions show excess conduction below the sum of the energy gaps (with onset at the counter-electrode gap) and a broadened current rise at the sum gap. The detailed origins of these problems are not yet understood

Optimum processing parameters for the fabrication of twill flax fabric-reinforced polypropylene (PP) composites

Science.gov (United States)

Zuhudi, Nurul Zuhairah Mahmud; Minhat, Mulia; Shamsuddin, Mohd Hafizi; Isa, Mohd Dali; Nur, Nurhayati Mohd

2017-12-01

In recent years, natural fabric thermoplastic composites such as flax have received much attention due to its attractive capabilities for structural applications. It is crucial to study the processing of flax fabric materials in order to achieve good quality and cost-effectiveness in fibre reinforced composites. Though flax fabric has been widely utilized for several years in composite applications due to its high strength and abundance in nature, much work has been concentrated on short flax fibre and very little work focused on using flax fabric. The effectiveness of the flax fabric is expected to give higher strength performance due to its structure but the processing needs to be optimised. Flax fabric composites were fabricated using compression moulding due to its simplicity, gives good surface finish and relatively low cost in terms of labour and production. Further, the impregnation of the polymer into the fabric is easier in this process. As the fabric weave structure contributes to the impregnation quality which leads to the overall performance, the processing parameters of consolidation i.e. pressure, time, and weight fraction of fabric were optimized using the Taguchi method. This optimization enhances the consolidation quality of the composite by improving the composite mechanical properties, three main tests were conducted i.e. tensile, flexural and impact test. It is observed that the processing parameter significantly affected the consolidation and quality of composite.

Fabrication of fully epitaxial magnetic tunnel junctions with a Co2MnSi thin film and a MgO tunnel barrier

International Nuclear Information System (INIS)

Kijima, H.; Ishikawa, T.; Marukame, T.; Matsuda, K.-I.; Uemura, T.; Yamamoto, M.

2007-01-01

Fully epitaxial magnetic tunnel junctions (MTJs) were fabricated with a Co-based full-Heusler alloy Co 2 MnSi (CMS) thin film having the ordered L2 1 structure as a lower electrode, a MgO tunnel barrier, and a Co 50 Fe 50 upper electrode. Reflection high-energy electron diffraction patterns observed in situ for each layer in the MTJ layer structure during fabrication clearly indicated that all layers of the CMS lower electrode, MgO tunnel barrier, and Co 50 Fe 50 upper electrode grew epitaxially. The microfabricated fully epitaxial CMS/MgO/Co 50 Fe 50 MTJs demonstrated relatively high tunnel magnetoresistance ratios of 90% at room temperature and 192% at 4.2 K

Radiation detection with Nb/Al-AlOx/Al/Nb superconducting tunnel junctions

International Nuclear Information System (INIS)

Matsumura, Atsuki; Takahashi, Toru; Kurakado, Masahiko

1992-01-01

Superconductor radiation detectors have the possibility of 20-30 times better energy resolution than that of a high resolution Si detector. We fabricated Nb/Al-AlOx/Al/Nb superconducting tunnel junctions with low leakage current. X rays were detected with large area junctions of 178x178 μm 2 . High energy resolution of 160 eV for 5.9 keV was obtained. We also fabricated series connected junctions which covers a rather large area of 4x4 mm 2 . α particles injected into the rear substrate were detected using nonthermal phonons induced by the radiations in the substrate. (author)

Josephson tunnel junctions in niobium films

International Nuclear Information System (INIS)

Wiik, Tapio.

1976-12-01

A method of fabricating stable Josephson tunnel junctions with reproducible characteristics is described. The junctions have a sandwich structure consisting of a vacuum evaporated niobium film, a niobium oxide layer produced by the glow discharge method and a lead film deposited by vacuum evaporation. Difficulties in producing thin-film Josephson junctions are discussed. Experimental results suggest that the lower critical field of the niobium film is the most essential parameter when evaluating the quality of these junctions. The dependence of the lower critical field on the film thickness and on the Ginzburg-Landau parameter of the film is studied analytically. Comparison with the properties of the evaporated films and with the previous calculations for bulk specimens shows that the presented model is applicable for most of the prepared samples. (author)

Controlling the formation process and atomic structures of single pyrazine molecular junction by tuning the strength of the metal-molecule interaction.

Science.gov (United States)

Kaneko, Satoshi; Takahashi, Ryoji; Fujii, Shintaro; Nishino, Tomoaki; Kiguchi, Manabu

2017-04-12

The formation process and atomic structures were investigated for single pyrazine molecular junctions sandwiched by three different Au, Ag, and Cu electrodes using a mechanically controllable break junction technique in ultrahigh vacuum conditions at 300 K. We demonstrated that the formation process of the single-molecule junction crucially depended on the choice of the metal electrodes. While single-molecule junction showing two distinct conductance states were found for the Au electrodes, only the single conductance state was evident for the Ag electrodes, and there was no junction formation for the Cu electrodes. These results suggested that metal-molecule interaction dominates the formation process and probability of the single-molecule junction. In addition to the metal-molecule interaction, temperature affected the formation process of the single-molecule junction. The single pyrazine molecular junction formed between Au electrodes exhibited significant temperature dependence where the junction-formation probability was about 8% at 300 K, while there was no junction-formation at 100 K. Instead of the junction formation, an Au atomic wire was formed at the low temperature. This study provides insight into the tuning of the junction-forming process for single-molecule junctions, which is needed to construct device structures on a single molecule scale.

Process for fabrication of cermets

Science.gov (United States)

Landingham, Richard L [Livermore, CA

2011-02-01

Cermet comprising ceramic and metal components and a molten metal infiltration method and process for fabrication thereof. The light weight cermets having improved porosity, strength, durability, toughness, elasticity fabricated from presintered ceramic powder infiltrated with a molten metal or metal alloy. Alumina titanium cermets biocompatible with the human body suitable for bone and joint replacements.

Effect of quasi-particle injection on retrapping current of Josephson junction

OpenAIRE

Utsunomiya, K.; Yagi, Ryuta

2006-01-01

We report that the energy dissipation of Josephson junction can be controlled by quasi-particle injection. We fabricated two Josephson junctions on the narrow aluminum wire and controlled the energy dissipation of one junction by quasi-particle injection from the other. We observed the retrapping current increased as the quasi-particles were injected. We also studied the heating effect of our measurement.

Josephson junction arrays and superconducting wire networks

International Nuclear Information System (INIS)

Lobb, C.J.

1992-01-01

Techniques used to fabricate integrated circuits make it possible to construct superconducting networks containing as many as 10 6 wires or Josephson junctions. Such networks undergo phase transitions from resistive high-temperature states to ordered low-resistance low-temperature states. The nature of the phase transition depends strongly on controllable parameters such as the strength of the superconductivity in each wire or junction and the external magnetic field. This paper will review the physics of these phase transitions, starting with the simplest zero-magnetic field case. This leads to a Kosterlitz-Thouless transition when the junctions or wires are weak, and a simple mean-field fransition when the junctions or wires are strong. Rich behavior, resulting from frustration, occurs in the presence of a magnetic field. (orig.)

First fabrication of full 3D-detectors at SINTEF

International Nuclear Information System (INIS)

Hansen, Thor-Erik; Kok, Angela; Hansen, Trond A; Lietaer, Nicolas; Mielnik, Michal; Storaas, Preben; Via, Cinzia Da'; Hasi, Jasmine; Kenney, Chris; Parker, Sherwood

2009-01-01

3D-detectors, with electrodes penetrating through the entire substrates have drawn great interests for high energy physics and medical imaging applications. Since its introduction by C. Kenney et al in 1995, many laboratories have begun research on different 3D-detector structures to simplify and industrialise the fabrication process. SINTEF MiNaLab joined the 3D collaboration in 2006 and started the first 3D fabrication run in 2007. This is the first step in an effort to fabricate affordable 3D-detectors in small to medium size production volumes. The first run was fully completed in February 2008 and preliminary results are promising. Good p-n junction characteristics have been shown on selected devices at the chip level with a leakage current of less than 0.5 nA per pixel. Thus SINTEF is the second laboratory in the world after the Stanford Nanofabrication Facility that has succeeded in demonstrating full 3D-detectors with active edge. A full 3D-stacked detector system were formed by bump-bonding the detectors to the ATLAS readout electronics, and successful particle hit maps using an Am-241 source were recorded. Most modules, however, showed largely increased leakage currents after assembly, which is due to the active edge and p-spray acting as part of the total chip pn-junction and not as a depletion stop. This paper describes the first fabrication and the encountered processing issues. The preliminary measurements on both the individual detector chips and the integrated 3D-stacked modules are discussed. A new lot has now been started on p-type wafers, which offers a more robust configuration with the active edge acting as depletion stop instead of part of the pn-junction.

Supramolecular Systems and Chemical Reactions in Single-Molecule Break Junctions.

Science.gov (United States)

Li, Xiaohui; Hu, Duan; Tan, Zhibing; Bai, Jie; Xiao, Zongyuan; Yang, Yang; Shi, Jia; Hong, Wenjing

2017-04-01

The major challenges of molecular electronics are the understanding and manipulation of the electron transport through the single-molecule junction. With the single-molecule break junction techniques, including scanning tunneling microscope break junction technique and mechanically controllable break junction technique, the charge transport through various single-molecule and supramolecular junctions has been studied during the dynamic fabrication and continuous characterization of molecular junctions. This review starts from the charge transport characterization of supramolecular junctions through a variety of noncovalent interactions, such as hydrogen bond, π-π interaction, and electrostatic force. We further review the recent progress in constructing highly conductive molecular junctions via chemical reactions, the response of molecular junctions to external stimuli, as well as the application of break junction techniques in controlling and monitoring chemical reactions in situ. We suggest that beyond the measurement of single molecular conductance, the single-molecule break junction techniques provide a promising access to study molecular assembly and chemical reactions at the single-molecule scale.

Fabrication of BiOBr nanosheets@TiO{sub 2} nanobelts p–n junction photocatalysts for enhanced visible-light activity

Energy Technology Data Exchange (ETDEWEB)

Zhao, Yang [School of Chemical Engineering and Technology, Tianjin University, Tianjin 300072 (China); Huang, Xiang [School of Chemical Engineering and Technology, Tianjin University, Tianjin 300072 (China); School of Science, Tibet University, Lhasa 850000 (China); Tan, Xin [School of Science, Tibet University, Lhasa 850000 (China); Yu, Tao, E-mail: yutao@tju.edu.cn [School of Chemical Engineering and Technology, Tianjin University, Tianjin 300072 (China); Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin 300072 (China); Li, Xiangli [School of Environmental Science and Engineering, Tianjin University, Tianjin 300072 (China); Yang, Libin [College of Chemical Engineering and Materials Science, Tianjin University of Science & Technology, Tianjin Key Laboratory of Marine Resources and Chemistry, Tianjin 300457 (China); Wang, Shucong [School of Environmental Science and Engineering, Tianjin University, Tianjin 300072 (China)

2016-03-01

Graphical abstract: - Highlights: • BiOBr nanosheets@TiO{sub 2} nanobelts p–n junction photocatalysts have been synthesized. • The p–n junction photocatalysts improved water splitting and dye degradation activity. • BiOBr amount in the BiOBr@TiO{sub 2} photocatalysts was investigated. - Abstract: The construction of p–n junction structure is a smart strategy for improving the photocatalytic activity, since p–n junctions can inhibit the recombination of photo-induced charges. Herein, BiOBr nanosheets@TiO{sub 2} nanobelts p–n junction photocatalysts were prepared by assembling BiOBr nanosheets on the surface of TiO{sub 2} nanobelts via a hydrothermal route followed by a co-precipitation process. BiOBr@TiO{sub 2} p–n junction photocatalysts exhibited enhanced photocatalytic activity in photocatalytic H{sub 2} production over water splitting and photodegradation of Rhodamine B (RhB) under visible light irradiation. Mott–Schottky plots confirmed the formation of p–n junctions in the interface of BiOBr and TiO{sub 2}. The enhanced photocatalytic performance can be ascribed to the 1D nanostructure and the formation of p–n junctions. This work shows a potential application of low cost BiOBr as a substitute for noble metals in photocatalytic H{sub 2} production under visible light irradiation.

Observation of supercurrent in graphene-based Josephson junction

Energy Technology Data Exchange (ETDEWEB)

Wang, Libin; Li, Sen; Kang, Ning [Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871 (China); Xu, Chuan; Ren, Wencai [Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016 (China)

2015-07-01

Josephson junctions with a normal metal region sandwiched between two superconductors (S) are known as superconductor- normal-superconductor (SNS) structures. It has attracted significant attention especially when changing the normal metal with graphene, which allow for high tunability with the gate voltage and to study the proximity effect of the massless Dirac fermions. Here we report our work on graphene-based Josephson junction with a new two dimensional superconductor crystal, which grown directly on graphene, as superconducting electrodes. At low temperature, we observer proximity effect induced supercurrent flowing through the junction. The temperature and the magnetic field dependences of the critical current characteristics of the junction are also studied. The critical current exhibits a Fraunhofer-type diffraction pattern against magnetic field. Our experiments provided a new route of fabrication of graphene-based Josephson junction.

Peltier cooling in molecular junctions

Science.gov (United States)

Cui, Longji; Miao, Ruijiao; Wang, Kun; Thompson, Dakotah; Zotti, Linda Angela; Cuevas, Juan Carlos; Meyhofer, Edgar; Reddy, Pramod

2018-02-01

The study of thermoelectricity in molecular junctions is of fundamental interest for the development of various technologies including cooling (refrigeration) and heat-to-electricity conversion1-4. Recent experimental progress in probing the thermopower (Seebeck effect) of molecular junctions5-9 has enabled studies of the relationship between thermoelectricity and molecular structure10,11. However, observations of Peltier cooling in molecular junctions—a critical step for establishing molecular-based refrigeration—have remained inaccessible. Here, we report direct experimental observations of Peltier cooling in molecular junctions. By integrating conducting-probe atomic force microscopy12,13 with custom-fabricated picowatt-resolution calorimetric microdevices, we created an experimental platform that enables the unified characterization of electrical, thermoelectric and energy dissipation characteristics of molecular junctions. Using this platform, we studied gold junctions with prototypical molecules (Au-biphenyl-4,4'-dithiol-Au, Au-terphenyl-4,4''-dithiol-Au and Au-4,4'-bipyridine-Au) and revealed the relationship between heating or cooling and charge transmission characteristics. Our experimental conclusions are supported by self-energy-corrected density functional theory calculations. We expect these advances to stimulate studies of both thermal and thermoelectric transport in molecular junctions where the possibility of extraordinarily efficient energy conversion has been theoretically predicted2-4,14.

The effects of surface modification on the electrical properties of p–n+ junction silicon nanowires grown by an aqueous electroless etching method

International Nuclear Information System (INIS)

Lee, Seulah; Koo, Ja Hoon; Seo, Jungmok; Kim, Sung-Dae; Lee, Kwang Hyun; Im, Seongil; Kim, Young-Woon; Lee, Taeyoon

2012-01-01

Although the aqueous electroless etching (AEE) method has received significant attention for the fabrication of silicon nanowires (SiNWs) due to its simplicity and effectiveness, SiNWs grown via the AEE method have a drawback in that their surface roughness is considerably high. Thus, we fabricated surface-modified p–n + junction SiNWs grown by AEE, wherein the surface roughness was reduced by a sequential processes of oxide growth using the rapid thermal oxidation (RTO) cycling process and oxide removal with a hydrofluoric acid solution. High-resolution transmission electron microscopy analysis confirmed that the surface roughness of the modified SiNWs was significantly decreased compared with that of the as-fabricated SiNWs. After RTO treatment, the wettability of the SiNWs had dramatically changed from superhydrophilic to superhydrophobic, which can be attributed to the formation of siloxane groups on the native oxide/SiNW surfaces and the effect of the nanoscale structure. Due to the enhancement in surface carrier mobility, the current density of the surface-modified p–n + junction SiNWs was approximately 6.3-fold greater than that of the as-fabricated sample at a forward bias of 4 V. Meanwhile, the photocurrent density of the surface-modified p–n + junction SiNWs was considerably decreased as a result of the decreases in the light absorption area, light absorption volume, and light scattering.

Response of high Tc superconducting Josephson junction to nuclear radiation

International Nuclear Information System (INIS)

Ding Honglin; Zhang Wanchang; Zhang Xiufeng

1992-10-01

The development of nuclear radiation detectors and research on high T c superconducting nuclear radiation detectors are introduced. The emphases are the principle of using thin-film and thick-film Josephson junctions (bridge junction) based on high T c YBCO superconductors to detect nuclear radiation, the fabrication of thin film and thick-film Josephson junction, and response of junction to low energy gamma-rays of 59.5 keV emitted from 241 Am and beta-rays of 546 keV. The results show that a detector for measuring nuclear radiation spectrum made of high T c superconducting thin-film or thick-film, especially, thick-film Josephson junction, certainly can be developed

Self-limited plasmonic welding of silver nanowire junctions

KAUST Repository

Garnett, Erik C.

2012-02-05

Nanoscience provides many strategies to construct high-performance materials and devices, including solar cells, thermoelectrics, sensors, transistors, and transparent electrodes. Bottom-up fabrication facilitates large-scale chemical synthesis without the need for patterning and etching processes that waste material and create surface defects. However, assembly and contacting procedures still require further development. Here, we demonstrate a light-induced plasmonic nanowelding technique to assemble metallic nanowires into large interconnected networks. The small gaps that form naturally at nanowire junctions enable effective light concentration and heating at the point where the wires need to be joined together. The extreme sensitivity of the heating efficiency on the junction geometry causes the welding process to self-limit when a physical connection between the wires is made. The localized nature of the heating prevents damage to low-thermal-budget substrates such as plastics and polymer solar cells. This work opens new avenues to control light, heat and mass transport at the nanoscale. © 2012 Macmillan Publishers Limited. All rights reserved.

Experimental Evidence for Phase-Locked States in Stacked Long Josephson Junctions

DEFF Research Database (Denmark)

Carapella, Giovanni; Costabile, Giovanni; Mancher, Martin

1997-01-01

We fabricated and tested samples consisteing of two long stacked Josephson junctions with direct access to the intermediate electrode, whose thickness is smaller than the London penetration depth $\\lambda _L$. The electrodes are patterned so that the junctions can be idependently biased in the ov...

U-10Mo Baseline Fuel Fabrication Process Description

Energy Technology Data Exchange (ETDEWEB)

Hubbard, Lance R. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Arendt, Christina L. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Dye, Daniel F. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Clayton, Christopher K. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Lerchen, Megan E. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Lombardo, Nicholas J. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Lavender, Curt A. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Zacher, Alan H. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States)

2017-09-27

This document provides a description of the U.S. High Power Research Reactor (USHPRR) low-enriched uranium (LEU) fuel fabrication process. This document is intended to be used in conjunction with the baseline process flow diagram (PFD) presented in Appendix A. The baseline PFD is used to document the fabrication process, communicate gaps in technology or manufacturing capabilities, convey alternatives under consideration, and as the basis for a dynamic simulation model of the fabrication process. The simulation model allows for the assessment of production rates, costs, and manufacturing requirements (manpower, fabrication space, numbers and types of equipment, etc.) throughout the lifecycle of the USHPRR program. This document, along with the accompanying PFD, is updated regularly

Fabrication of assembled ZnO/TiO2 heterojunction thin film transistors using solution processing technique

Science.gov (United States)

Liau, Leo Chau-Kuang; Lin, Yun-Guo

2015-01-01

Ceramic-based metal-oxide-semiconductor (MOS) field-effect thin film transistors (TFTs), which were assembled by ZnO and TiO2 heterojunction films coated using solution processing technique, were fabricated and characterized. The fabrication of the device began with the preparation of ZnO and TiO2 films by spin coating. The ZnO and TiO2 films that were stacked together and annealed at 450 °C were characterized as a p-n junction diode. Two types of the devices, p-channel and n-channel TFTs, were produced using different assemblies of ZnO and TiO2 films. Results show that the p-channel TFTs (p-TFTs) and n-channel TFTs (n-TFTs) using the assemblies of ZnO and TiO2 films were demonstrated by source-drain current vs. drain voltage (IDS-VDS) measurements. Several electronic properties of the p- and n- TFTs, such as threshold voltage (Vth), on-off ratio, channel mobility, and subthreshold swing (SS), were determined by current-voltage (I-V) data analysis. The ZnO/TiO2-based TFTs can be produced using solution processing technique and an assembly approach.

Vertical current-flow enhancement via fabrication of GaN nanorod p–n junction diode on graphene

Energy Technology Data Exchange (ETDEWEB)

Ryu, Sung Ryong [Quantum-functional Semiconductor Research Center, Dongguk University-Seoul, 100-715 (Korea, Republic of); Department of physics, Dongguk University, Seoul, 100-715 (Korea, Republic of); Ram, S.D. Gopal; Lee, Seung Joo; Cho, Hak-dong; Lee, Sejoon [Quantum-functional Semiconductor Research Center, Dongguk University-Seoul, 100-715 (Korea, Republic of); Kang, Tae Won, E-mail: twkang@dongguk.edu [Quantum-functional Semiconductor Research Center, Dongguk University-Seoul, 100-715 (Korea, Republic of); Clean Energy and Nano Convergence Centre, Hindustan University, Chennai 600 016 (India); Kwon, Sangwoo; Yang, Woochul [Department of physics, Dongguk University, Seoul, 100-715 (Korea, Republic of); Shin, Sunhye [Soft-Epi Inc., 240 Opo-ro, Opo-eup, Gwangju-si, Gyeonggi-do (Korea, Republic of); Woo, Yongdeuk [Department of Mechanical and Automotive Engineering, Woosuk University, Chonbuk 565-701 (Korea, Republic of)

2015-08-30

Highlights: • Uniaxial p–n junction diode in GaN nanorod is made by Hydride vapor phase epitaxy method. • The p–n junction diode property is clearly observed from the fabricated uniaxial p–n junction nanorod GaN nanorod. • Graphene is used as a current spreading layer to reduce the lateral resistance up to 700 times when compared with the commercial sapphire substrate, which is clearly explained with the aid of an equivalent circuit. • Kelvin Force Probe microscopy method is employed to visualize the p- and n- regions in a single GaN nanorod. - Abstract: Mg doped GaN nanorods were grown on undoped n-type GaN nanorods uniaxial on monolayer graphene by hydride vapor phase epitaxy (HVPE) method. The monolayer graphene used as the bottom electrode and a substrate as well provides good electrical contact, acts as a current spreading layer, well suitable for the growth of hexagonal GaN nanorod. In addition it has a work function suitable to that of n-GaN. The formed p–n nanorods show a Schottky behavior with a turn on voltage of 3 V. Using graphene as the substrate, the resistance of the nanorod is reduced by 700 times when compared with the case without using graphene as the current spreading layer. The low resistance of graphene acts in parallel with the resistance of the GaN buffer layer, and reduces the resistance drastically. The formed p–n junction in a single GaN nanorod is visualized by Kelvin Force Probe Microscopy (KPFM) to have distinctively contrast p and n regions. The measured contact potential difference of p-and n-region has a difference of 103 mV which well confirms the formed regions are electronically different. Low temperature photoluminescence (PL) spectra give evidence of dopant related acceptor bound emission at 3.2 eV different from 3.4 eV of undoped GaN. The crystalline structure, compositional purity is confirmed by X-ray diffraction (XRD), Transmission and Scanning electron microcopies (SEM), (TEM), Energy dispersive analysis

Vertical current-flow enhancement via fabrication of GaN nanorod p–n junction diode on graphene

International Nuclear Information System (INIS)

Ryu, Sung Ryong; Ram, S.D. Gopal; Lee, Seung Joo; Cho, Hak-dong; Lee, Sejoon; Kang, Tae Won; Kwon, Sangwoo; Yang, Woochul; Shin, Sunhye; Woo, Yongdeuk

2015-01-01

Highlights: • Uniaxial p–n junction diode in GaN nanorod is made by Hydride vapor phase epitaxy method. • The p–n junction diode property is clearly observed from the fabricated uniaxial p–n junction nanorod GaN nanorod. • Graphene is used as a current spreading layer to reduce the lateral resistance up to 700 times when compared with the commercial sapphire substrate, which is clearly explained with the aid of an equivalent circuit. • Kelvin Force Probe microscopy method is employed to visualize the p- and n- regions in a single GaN nanorod. - Abstract: Mg doped GaN nanorods were grown on undoped n-type GaN nanorods uniaxial on monolayer graphene by hydride vapor phase epitaxy (HVPE) method. The monolayer graphene used as the bottom electrode and a substrate as well provides good electrical contact, acts as a current spreading layer, well suitable for the growth of hexagonal GaN nanorod. In addition it has a work function suitable to that of n-GaN. The formed p–n nanorods show a Schottky behavior with a turn on voltage of 3 V. Using graphene as the substrate, the resistance of the nanorod is reduced by 700 times when compared with the case without using graphene as the current spreading layer. The low resistance of graphene acts in parallel with the resistance of the GaN buffer layer, and reduces the resistance drastically. The formed p–n junction in a single GaN nanorod is visualized by Kelvin Force Probe Microscopy (KPFM) to have distinctively contrast p and n regions. The measured contact potential difference of p-and n-region has a difference of 103 mV which well confirms the formed regions are electronically different. Low temperature photoluminescence (PL) spectra give evidence of dopant related acceptor bound emission at 3.2 eV different from 3.4 eV of undoped GaN. The crystalline structure, compositional purity is confirmed by X-ray diffraction (XRD), Transmission and Scanning electron microcopies (SEM), (TEM), Energy dispersive analysis

Niobium nitride Josephson tunnel junctions with magnesium oxide barriers

International Nuclear Information System (INIS)

Shoji, A.; Aoyagi, M.; Kosaka, S.; Shinoki, F.; Hayakawa, H.

1985-01-01

Niobium nitride-niobium nitride Josephson tunnel junctions have been fabricated using amorphous magnesium oxide (a-MgO) films as barriers. These junctions have excellent tunneling characteristics. For example, a large gap voltage (V/sub g/ = 5.1 mV), a large product of the maximum critical current and the normal tunneling resistance (I/sub c/R/sub n/ = 3.25 mV), and a small subgap leakage current (V/sub m/ = 45 mV, measured at 3 mV) have been obtained for a NbN/a-MgO/NbN junction. The critical current of this junction remains finite up to 14.5 K

Visualizing supercurrents in 0-{pi} ferromagnetic Josephson tunnel junctions

Energy Technology Data Exchange (ETDEWEB)

Goldobin, Edward; Guerlich, Christian; Gaber, Tobias; Koelle, Dieter; Kleiner, Reinhold [Physikalisches Institut and Center for Collective Quantum Phenomena, Universitaet Tuebingen (Germany); Weides, Martin; Kohlstedt, Hermann [Institute of Solid State Physics, Reserch Center Juelich (Germany)

2009-07-01

So-called 0 and {pi} Josephson junctions can be treated as having positive and negative critical currents. This implies that the same phase shift applied to a Josephson junction causes counterflow of supercurrents in 0 and in {pi} junctions connected in parallel provided they are short in comparison with Josephson penetration depth {lambda}{sub J}. We have fabricated several 0, {pi}, 0-{pi}, 0-{pi}-0 and 20 x (0-{pi}-) planar superconductor-insulator-ferromagnet-superconductor Josephson junctions and studied the spatial supercurrent density distribution j{sub s}(x,y) across the junction area using low temperature scanning electron microscopy. At zero magnetic field we clearly see counterflow of the supercurrents in 0 and {pi} regions. The picture also changes consistently in the applied magnetic field.

Schottky junction photovoltaic devices based on CdS single nanobelts.

Science.gov (United States)

Ye, Y; Dai, L; Wu, P C; Liu, C; Sun, T; Ma, R M; Qin, G G

2009-09-16

Schottky junction photovoltaic (PV) devices were fabricated on single CdS nanobelts (NBs). Au was used as the Schottky contact, and In/Au was used as the ohmic contact to CdS NB. Typically, the Schottky junction exhibits a well-defined rectifying behavior in the dark with a rectification ratio greater than 10(3) at +/- 0.3 V; and the PV device exhibits a clear PV behavior with an open circuit photovoltage of about 0.16 V, a short circuit current of about 23.8 pA, a maximum output power of about 1.6 pW, and a fill factor of 42%. Moreover, the output power can be multiplied by connecting two or more of the Schottky junction PV devices, made on a single CdS NB, in parallel or in series. This study demonstrates that the 1D Schottky junction PV devices, which have the merits of low cost, easy fabrication and material universality, can be an important candidate for power sources in nano-optoelectronic systems.

Superconducting tunnel junctions on MgB{sub 2} using MgO and CaF{sub 2} as a barrier

Energy Technology Data Exchange (ETDEWEB)

Sakoda, Masahito, E-mail: sakoda@cc.tuat.ac.jp [Department of Applied Physics, Tokyo University of Agriculture and Technology, 2-24-16, Koganei, Tokyo 184-8588 (Japan); Aibara, Masato; Mede, Kazuya; Kikuchi, Motoyuki; Naito, Michio [Department of Applied Physics, Tokyo University of Agriculture and Technology, 2-24-16, Koganei, Tokyo 184-8588 (Japan)

2016-11-15

Highlights: • We have revised the manuscript according to reviewer's comments. The details are in “Response to Reviewers”. • Superconducting junctions with MgO and CaF{sub 2} barrier were fabricated in order to improve the quality of junctions. • In SIN junctions with MgO barrier, clear superconducting gap was observed. (). • In SIS junctions with CaF2 barrier, Josephson current was observed over 30 K. (). • The compatibility of each barrier material at the upper and lower interfaces was clarified. (). - Abstract: We report the fabrication of superconducting tunnel junctions, both of superconductor–insulator-normal metal (SIN) and superconductor–insulator-superconductor (SIS), on MgB{sub 2} using MgO and CaF{sub 2} as a barrier. The SIN junctions fabricated using an MgO barrier showed excellent quasi-particle characteristics, including a large superconducting gap (Δ) of 2.5–3 meV and a low zero-bias conductance. We have also fabricated SIS junctions with an MgO barrier, but the quasi-particle characteristics of the SIS junctions are not as good as those of the SIN junctions, namely a reduced superconducting gap and a high zero-bias conductance. It appears that top MgB{sub 2} electrodes do not grow well on an MgO barrier, which is also suggested from in-situ RHEED observation. The SIN junctions fabricated using a CaF{sub 2} barrier showed less sharp quasi-particle characteristics than using an MgO barrier. However, the SIS junctions using a CaF{sub 2} barrier showed a fairly large I{sub c}R{sub N} value at 4.2 K over 1 mV and also exhibited finite Josephson current up to almost the film's T{sub c} (∼30 K). The RHEED observation revealed that top MgB{sub 2} electrodes grow well on a CaF{sub 2} barrier.

Fabricating an S&OP Process

DEFF Research Database (Denmark)

Lichen, Alex Yu

, constituents of the S&OP process are dispersed in diverse local times and spaces rather than being coordinated in a single time and space by the group demand chain. Accounting is a set of matters of concern. The S&OP process and its purpose of integration come from an “absolute nothingness” – its minimal......Inspired by Latour’s (2005a) notion of matters of concern and M.C. Escher’s Circle Limit III as a representation of the Poincaré Disk, this study follows how an S&OP process was fabricated in a large Swedish manufacturing company. The study claims that when actors are fabricating the S&OP process......, local actors create emergent, ongoing and multiple matters of concern around it. The group demand chain, the actor who is responsible for guiding the implementation of the process, delegates the attempts to close these matters of concern to local actors located in separate times and spaces. As a result...

Optimizing The DSSC Fabrication Process Using Lean Six Sigma

Science.gov (United States)

Fauss, Brian

Alternative energy technologies must become more cost effective to achieve grid parity with fossil fuels. Dye sensitized solar cells (DSSCs) are an innovative third generation photovoltaic technology, which is demonstrating tremendous potential to become a revolutionary technology due to recent breakthroughs in cost of fabrication. The study here focused on quality improvement measures undertaken to improve fabrication of DSSCs and enhance process efficiency and effectiveness. Several quality improvement methods were implemented to optimize the seven step individual DSSC fabrication processes. Lean Manufacturing's 5S method successfully increased efficiency in all of the processes. Six Sigma's DMAIC methodology was used to identify and eliminate each of the root causes of defects in the critical titanium dioxide deposition process. These optimizations resulted with the following significant improvements in the production process: 1. fabrication time of the DSSCs was reduced by 54 %; 2. fabrication procedures were improved to the extent that all critical defects in the process were eliminated; 3. the quantity of functioning DSSCs fabricated was increased from 17 % to 90 %.

Dynamic Tunneling Junctions at the Atomic Intersection of Two Twisted Graphene Edges.

Science.gov (United States)

Bellunato, Amedeo; Vrbica, Sasha D; Sabater, Carlos; de Vos, Erik W; Fermin, Remko; Kanneworff, Kirsten N; Galli, Federica; van Ruitenbeek, Jan M; Schneider, Grégory F

2018-04-11

The investigation of the transport properties of single molecules by flowing tunneling currents across extremely narrow gaps is relevant for challenges as diverse as the development of molecular electronics and sequencing of DNA. The achievement of well-defined electrode architectures remains a technical challenge, especially due to the necessity of high precision fabrication processes and the chemical instability of most bulk metals. Here, we illustrate a continuously adjustable tunneling junction between the edges of two twisted graphene sheets. The unique property of the graphene electrodes is that the sheets are rigidly supported all the way to the atomic edge. By analyzing the tunneling current characteristics, we also demonstrate that the spacing across the gap junction can be controllably adjusted. Finally, we demonstrate the transition from the tunneling regime to contact and the formation of an atomic-sized junction between the two edges of graphene.

External magnetic field and self-field effects in stacked long Josephson junctions

DEFF Research Database (Denmark)

Carapella, G.; Costabile, G.; Mygind, Jesper

1996-01-01

We have fabricated and tested samples consisting of two long stacked Josephson junctions with direct access to the intermediate electrode, whose thickness is smaller than London penetration depth lambda(L). The electrodes are patterned so that the junctions can be independently biased in the over...

Sputter fabricated Nb-oxide-Nb josephson junctions incorporating post-oxidation noble metal layers

International Nuclear Information System (INIS)

Bain, R.J.P.; Donaldson, G.B.

1985-01-01

We present an extension, involving other metals, of the work of Hawkins and Clarke, who found that a thin layer of copper prevented the formation of the superconductive shorts which are an inevitable consequence of sputtering niobium counter-electrodes directly on top of niobium oxide. We find gold to be the most satisfactory, and that 0.3 nm is sufficient to guarantee short-free junctions of excellent electrical and mechanical stability, though high excess conductance means they are best suited to shunted-junction applications, as in SQUIDs. We present results for critical current dependence on oxide thickness and on gold thickness. Our data shows that thermal oxide growth is described by the Cabrera-Mott mechanism. We show that the protective effect of the gold layer can be understood in terms of the electro-chemistry of the Nb-oxide-Au structure, and that the reduced quasi-particle resistance of the junctions relative to goldfree junctions with evaporated counterelectrodes can be explained in terms of barrier shape modification, and not by proximity effect mechanisms. The performance of a DC SQUID based on these junctions is described

Magnetoresistance in Co/AlO sub x /Co tunnel junction arrays

CERN Document Server

Urech, M; Haviland, D B

2002-01-01

Lateral arrays of Co/AlO sub x /Co junctions with dimensions down to 60 nm and inter-junction separations approx 60-100 nm have been fabricated and analyzed for possible coherent tunneling effects. Extra attention is paid to avoid uncertainties due to inconsistencies in switching and/or resistance of successive barriers. We observe approx 10% magnetoresistance enhancement at moderate bias in double junctions that cannot be accounted for by a simple model of two resistsors in series.

Process for fabricating mixed-oxide powders

International Nuclear Information System (INIS)

Elmaleh, D.; Giraudel, A.

1975-01-01

A physical-chemical process for fabricating homogeneous powders suitable for sintering is described. It can be applied to the synthesis of all mixed oxides having mutually compatible and water soluble salts. As a specific example, the fabrication of lead titanate-zirconate powders used to make hot pressed ceramics is described. These ceramics show improved piezoelectric properties [fr

Superconductor-insulator-normal-conductor-insulator-superconductor (Nb/Al{sub x}O{sub y}/Al/Al{sub x}O{sub y}/Nb) process development for integrated circuit applications

Energy Technology Data Exchange (ETDEWEB)

Balashov, D.; Buchholz, F.M.; Schulze, H.; Khabipov, M.I.; Kessel, W.; Niemeyer, J. [Physikalisch-Technische Bundesanstalt, Braunschweig (Germany)

1998-12-01

The paper reports on recent developments in a new technology process in LTS implementation to fabricate intrinsically shunted tunnel junctions. The process has been realized in SINIS Nb/Al{sub x}O{sub y}/Al/Al{sub x}O{sub y}/Nb multilayer thin-film technology. In various test series, circuits containing a large variety of single junctions and junction arrays of different contact areas and sizes were fabricated and measured. By variation of the oxidation parameters the fabrication process has been optimized for application in integrated circuits operating in RSFQ impulse logic. The junction parameter values realized for the critical current density j{sub c} range to up to about j{sub c} = 1000 A cm{sup -2}, those for the characteristic voltage V{sub c} to up to about V{sub c} = 230 {mu}V. The junctions show nearly non-hysteretic current-voltage characteristics; the intra-wafer parameter spread is below 10%. The junctions realized fulfil the requirements imposed for digital RSFQ circuit operation at clock frequencies in the lower GHz frequency range. (author)

Liquid phase epitaxy of abrupt junctions in InAs and studies of injection radiative tunneling processes

International Nuclear Information System (INIS)

Bull, D.J.

1977-01-01

The p-n junction in a InAs crystal, by liquid phase epitaxy is obtained. The processes of injection and tunneling radiative recombination by emitted radiation from active region of p-n junction for low injection current are studied. (M.C.K.) [pt

Fabrication of magnetic tunnel junctions with a single-crystalline LiF tunnel barrier

Science.gov (United States)

Krishna Narayananellore, Sai; Doko, Naoki; Matsuo, Norihiro; Saito, Hidekazu; Yuasa, Shinji

2018-04-01

We fabricated Fe/LiF/Fe magnetic tunnel junctions (MTJs) by molecular beam epitaxy on a MgO(001) substrate, where LiF is an insulating tunnel barrier with the same crystal structure as MgO (rock-salt type). Crystallographical studies such as transmission electron microscopy and nanobeam electron diffraction observations revealed that the LiF tunnel barrier is single-crystalline and has a LiF(001)[100] ∥ bottom Fe(001)[110] crystal orientation, which is constructed in the same manner as MgO(001) on Fe(001). Also, the in-plane lattice mismatch between the LiF tunnel barrier and the Fe bottom electrode was estimated to be small (about 0.5%). Despite such advantages for the tunnel barrier of the MTJ, the observed tunnel magnetoresistance (MR) ratio was low (˜6% at 20 K) and showed a significant decrease with increasing temperature (˜1% at room temperature). The results imply that indirect tunneling and/or thermally excited carriers in the LiF tunnel barrier, in which the current basically is not spin-polarized, play a major role in electrical transport in the MTJ.

Simple process to fabricate nitride alloy powders

International Nuclear Information System (INIS)

Yang, Jae Ho; Kim, Dong-Joo; Kim, Keon Sik; Rhee, Young Woo; Oh, Jang-Soo; Kim, Jong Hun; Koo, Yang Hyun

2013-01-01

Uranium mono-nitride (UN) is considered as a fuel material [1] for accident-tolerant fuel to compensate for the loss of fissile fuel material caused by adopting a thickened cladding such as SiC composites. Uranium nitride powders can be fabricated by a carbothermic reduction of the oxide powders, or the nitriding of metal uranium. Among them, a direct nitriding process of metal is more attractive because it has advantages in the mass production of high-purity powders and the reusing of expensive 15 N 2 gas. However, since metal uranium is usually fabricated in the form of bulk ingots, it has a drawback in the fabrication of fine powders. The Korea Atomic Energy Research Institute (KAERI) has a centrifugal atomisation technique to fabricate uranium and uranium alloy powders. In this study, a simple reaction method was tested to fabricate nitride fuel powders directly from uranium metal alloy powders. Spherical powder and flake of uranium metal alloys were fabricated using a centrifugal atomisation method. The nitride powders were obtained by thermal treating the metal particles under nitrogen containing gas. The phase and morphology evolutions of powders were investigated during the nitriding process. A phase analysis of nitride powders was also part of the present work. KAERI has developed the centrifugal rotating disk atomisation process to fabricate spherical uranium metal alloy powders which are used as advanced fuel materials for research reactors. The rotating disk atomisation system involves the tasks of melting, atomising, and collecting. A nozzle in the bottom of melting crucible introduces melt at the center of a spinning disk. The centrifugal force carries the melt to the edge of the disk and throws the melt off the edge. Size and shape of droplets can be controlled by changing the nozzle size, the disk diameter and disk speed independently or simultaneously. By adjusting the processing parameters of the centrifugal atomiser, a spherical and flake shape

FINAL PROCESS DEPENDENT DIMENSIONAL CHANGES OF DOUBLE KNIT FABRICS

Directory of Open Access Journals (Sweden)

Vedat ÖZYAZGAN

2012-01-01

Full Text Available In this paper Ne 30/1 cotton yarn obtained by using pure cotton fibers is employed. 1x1, 2x1 and 3x1 Rib fabrics were knitted with yarns at different gauges. During the knitting process, the tension was kept constant. In order to investigate the relaxation on the knitting process fabric samples were treated using three relaxation processes; dry, wet and full respectively. After each relaxation process, stitches dimensions were measured. As a result of these measurements, it is observed that as the relaxation increases the stitches length decreases while the stitches width increases. In rib knitting, As the fabric stretches increases the stitch length increases. As a result it is observed that as the stitch length increases, the width of the stitches increases linearly. In all rib fabrics, increase in the stitch density leads to an increase in the weight of the fabric.

Magnetic field behavior of current steps in long Josephson junctions

International Nuclear Information System (INIS)

Costabile, G.; Cucolo, A.M.; Pace, S.; Parmentier, R.D.; Savo, B.; Vaglio, R.

1980-01-01

The zero-field steps, or dc current singularities, in the current-voltage characteristics of long Josephson tunnel junctions, first reported by Chen et al., continue to attract research interest both because their study can provide fundamental information on the dynamics of fluxons in such junctions and because they are accompanied by the emission of microwave radiation from the junction, which may be exploitable in practical oscillator applications. The purpose of this paper is to report some experimental observations of the magnetic field behavior of the steps in junctions fabricated in our Laboratory and to offer a qualitative explanation for this behavior. Measurements have been made both for very long (L >> lambdasub(J)) and for slightly long (L approx. >= lambdasub(J)) junctions with a view toward comparing our results with those of other workers. (orig./WRI)

Doping enhanced barrier lowering in graphene-silicon junctions

Science.gov (United States)

Zhang, Xintong; Zhang, Lining; Chan, Mansun

2016-06-01

Rectifying properties of graphene-semiconductor junctions depend on the Schottky barrier height. We report an enhanced barrier lowering in graphene-Si junction and its essential doping dependence in this paper. The electric field due to ionized charge in n-type Si induces the same type doping in graphene and contributes another Schottky barrier lowering factor on top of the image-force-induced lowering (IFIL). We confirm this graphene-doping-induced lowering (GDIL) based on well reproductions of the measured reverse current of our fabricated graphene-Si junctions by the thermionic emission theory. Excellent matching between the theoretical predictions and the junction data of the doping-concentration dependent barrier lowering serves as another evidence of the GDIL. While both GDIL and IFIL are enhanced with the Si doping, GDIL exceeds IFIL with a threshold doping depending on the as-prepared graphene itself.

Fabrication process of expanded cooling jackets

International Nuclear Information System (INIS)

Weber, C.M.

1980-01-01

The present invention concerns the fabrication process of heat exchangers and in particular, the fabrication and assembly process of cooling jackets of the system driving the control rods used in nuclear reactors. The cooling jackets are assembled for cooling the stator of a tubular motor displacing the control rods. The fabrication and assembling of the cooling jacket is made up by the following operations: - a sleeve has an inner fluid inlet and outlet ways, - an external socket is fitted to the sleeve, - on the external socket a continuous welding is realized, which join the socket to the sleeve, and define a serie of parallel welded turns, - a pressure is established between the sleeve and the socket by a fluid through the outlet or inlet ways of the sleeve. When the other way is sealed up, the socket expands between the welded turns, and the fluid can pass through the jacket [fr

Chirality effect in disordered graphene ribbon junctions

International Nuclear Information System (INIS)

Long Wen

2012-01-01

We investigate the influence of edge chirality on the electronic transport in clean or disordered graphene ribbon junctions. By using the tight-binding model and the Landauer-Büttiker formalism, the junction conductance is obtained. In the clean sample, the zero-magnetic-field junction conductance is strongly chirality-dependent in both unipolar and bipolar ribbons, whereas the high-magnetic-field conductance is either chirality-independent in the unipolar or chirality-dependent in the bipolar ribbon. Furthermore, we study the disordered sample in the presence of magnetic field and find that the junction conductance is always chirality-insensitive for both unipolar and bipolar ribbons with adequate disorders. In addition, the disorder-induced conductance plateaus can exist in all chiral bipolar ribbons provided the disorder strength is moderate. These results suggest that we can neglect the effect of edge chirality in fabricating electronic devices based on the magnetotransport in a disordered graphene ribbon. (paper)

Superconducting Tunnel Junction Arrays for UV Photon Detection, Phase I

Data.gov (United States)

National Aeronautics and Space Administration — An innovative method is described for the fabrication of superconducting tunnel junction (STJ) detector arrays offering true "three dimensional" imaging throughout...

Quality in the fabrication process

International Nuclear Information System (INIS)

Romano, A.; Aguirre, F.

2010-01-01

Enusa commitment to quality in the manufacture process materializes in the application of the most advanced product quality control technologies such as not-destructive inspection techniques, like artificial vision, X-ray or UT inspection, or process parameter statistical control systems. Quality inspectors are trained and certified by the main National Quality Organizations and receive periodic training under a formal company training program that constantly updates their qualification. Fabrication quality control reliability is based on a strategy that prioritizes redundancy of critical inspection equipment's and inspection personnel knowledge polyvalence. Furthermore, improvement in fabrication quality is obtained by a systematic application of the six sigma methodology where added value is created in projects integrating crosscutting company knowledge, reinforcing the global company vision that the fuel business is based on quality. (Author)

Final audit report of remedial action construction at the UMTRA Project, Grand Junction, Colorado, processing site

International Nuclear Information System (INIS)

1995-02-01

This final audit report (FAR) for remedial action at the Grand Junction, Colorado, Uranium Mill Tailings Remedial Action (UMTRA) Project processing site consists of a summary of the radiological surveillances/ audits, the quality assurance (QA) in-process surveillances, and the QA final close-out inspection performed by the US Department of Energy (DOE) and Technical Assistance Contractor (TAC). The FAR also summarizes other surveillances performed by the US Nuclear Regulatory Commission (NRC). To summarize, a total of one finding and 127 observations were noted during DOE/TAC audit and surveillance activities. The NRC noted general site-related observations during the OSCRs. Follow-up to responses required from MK-Ferguson for the DOE/TAC finding and observations indicated that all issues related to the Grand Junction processing site were resolved and closed out to the DOE's satisfaction. The NRC OSCRs resulted in no issues related to the Grand Junction processing site requiring a response from MK-Ferguson

Fabrication of hybrid molecular devices using multi-layer graphene break junctions

Science.gov (United States)

Island, J. O.; Holovchenko, A.; Koole, M.; Alkemade, P. F. A.; Menelaou, M.; Aliaga-Alcalde, N.; Burzurí, E.; van der Zant, H. S. J.

2014-11-01

We report on the fabrication of hybrid molecular devices employing multi-layer graphene (MLG) flakes which are patterned with a constriction using a helium ion microscope or an oxygen plasma etch. The patterning step allows for the localization of a few-nanometer gap, created by electroburning, that can host single molecules or molecular ensembles. By controlling the width of the sculpted constriction, we regulate the critical power at which the electroburning process begins. We estimate the flake temperature given the critical power and find that at low powers it is possible to electroburn MLG with superconducting contacts in close proximity. Finally, we demonstrate the fabrication of hybrid devices with superconducting contacts and anthracene-functionalized copper curcuminoid molecules. This method is extendable to spintronic devices with ferromagnetic contacts and a first step towards molecular integrated circuits.

InP tunnel junction for InGaAs/InP tandem solar cells

Science.gov (United States)

Vilela, M. F.; Freundlich, A.; Bensaoula, A.; Medelci, N.; Renaud, P.

1995-01-01

Chemical beam epitaxy (CBE) has been shown to allow the growth of high quality materials with reproducible complex compositional and doping profiles. The main advantage of CBE compared to metalorganic chemical vapor deposition (MOCVD), the most popular technique for InP-based photovoltaic device fabrication, is the ability to grow high purity epilayers at much lower temperatures (450-530 C). We have previously shown that CBE is perfectly suited toward the fabrication of complex photovoltaic devices such as InP/InGaAs monolithically integrated tandem solar cells, because its low process temperature preserves the electrical characteristics of the InGaAs tunnel junction commonly used as an ohmic interconnect. In this work using CBE for the fabrication of optically transparent (with respect to the bottom cell) InP tunnel diodes is demonstrated. Epitaxial growth were performed in a Riber CBE 32 system using PH3 and TMIn as III and V precursors. Solid Be (p-type) and Si (n-type) have been used as doping sources, allowing doping levels up to 2 x 10(exp -19)/cu cm and 1 x 10(exp -19)/cu cm for n and p type respectively. The InP tunnel junction characteristics and the influence of the growth's conditions (temperature, growth rate) over its performance have been carefully investigated. InP p(++)/n(++) tunnel junction with peak current densities up to 1600 A/sq cm and maximum specific resistivities (V(sub p)/I(sub p) - peak voltage to peak current ratio) in the range of 10(exp -4) Omega-sq cm were obtained. The obtained peak current densities exceed the highest results previously reported for their lattice matched counterparts, In(0.53)Ga( 0.47)As and should allow the realization of improved minimal absorption losses in the interconnect InP/InGaAs tandem devices for Space applications. Owing to the low process temperature required for the top cell, these devices exhibit almost no degradation of its characteristics after the growth of subsequent thick InP layer suggesting

Double-barrier junction based dc SQUID

NARCIS (Netherlands)

Bartolomé, M.E.; Brinkman, Alexander; Flokstra, Jakob; Golubov, Alexandre Avraamovitch; Rogalla, Horst

2000-01-01

dc SQUIDs based on double-barrier Nb/Al/AlOx/Al/AlOx/Al/Nb junctions (DBSQs) have been fabricated and tested for the first time. The current–voltage curves have been measured at temperatures down to 1.4 K. The critical current, Ic, dependence on the temperature T is partially described by the

The Dissolution of Double Holliday Junctions

DEFF Research Database (Denmark)

Bizard, Anna H; Hickson, Ian D

2014-01-01

as "double Holliday junction dissolution." This reaction requires the cooperative action of a so-called "dissolvasome" comprising a Holliday junction branch migration enzyme (Sgs1/BLM RecQ helicase) and a type IA topoisomerase (Top3/TopoIIIα) in complex with its OB (oligonucleotide/oligosaccharide binding......Double Holliday junctions (dHJS) are important intermediates of homologous recombination. The separate junctions can each be cleaved by DNA structure-selective endonucleases known as Holliday junction resolvases. Alternatively, double Holliday junctions can be processed by a reaction known......) fold containing accessory factor (Rmi1). This review details our current knowledge of the dissolution process and the players involved in catalyzing this mechanistically complex means of completing homologous recombination reactions....

Molecular beam epitaxial growth of Bi2Te3 and Sb2Te3 topological insulators on GaAs (111 substrates: a potential route to fabricate topological insulator p-n junction

Directory of Open Access Journals (Sweden)

Zhaoquan Zeng

2013-07-01

Full Text Available High quality Bi2Te3 and Sb2Te3 topological insulators films were epitaxially grown on GaAs (111 substrate using solid source molecular beam epitaxy. Their growth and behavior on both vicinal and non-vicinal GaAs (111 substrates were investigated by reflection high-energy electron diffraction, atomic force microscopy, X-ray diffraction, and high resolution transmission electron microscopy. It is found that non-vicinal GaAs (111 substrate is better than a vicinal substrate to provide high quality Bi2Te3 and Sb2Te3 films. Hall and magnetoresistance measurements indicate that p type Sb2Te3 and n type Bi2Te3 topological insulator films can be directly grown on a GaAs (111 substrate, which may pave a way to fabricate topological insulator p-n junction on the same substrate, compatible with the fabrication process of present semiconductor optoelectronic devices.

p - n junction diodes fabricated from isolated electrospun fibers of (P(NDI2ODT2)) and an inorganic p-doped semiconductor

Science.gov (United States)

Rosado, Alexander; Pinto, Nicholas

2013-03-01

A simple method to fabricate, under ambient conditions and within seconds, p - n diodes using an individual electrospun poly{[N, N'-bis(2-octyldodecyl)-naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diyl]-alt-5,5'-(2,2'-bithiophene)}-(P(NDI2ODT2)) fiber and a commercially available p-doped Si/SiO2 substrate is presented. Band bending at the fiber/Si+ interface leads to asymmetric I-V characteristic curves resembling that of a diode. The diode turn-on voltage was in the range 1V and was unaffected via UV light irradiation. The rectification ratio however could be tuned reversibly thereby making this device multifunctional. In addition to being a rectifier, the advantage of our design is the complete exposure of the rectifying junction to the surrounding environment. This has the advantage of making them attractive candidates in the potential fabrication of low power, sensitive and rapid response photo-sensors. NSF

Properties of all YBa2Cu3O7 Josephson edge junctions prepared by in situ laser ablation deposition

International Nuclear Information System (INIS)

Koren, G.; Aharoni, E.; Polturak, E.; Cohen, D.

1991-01-01

Thin-film YBa 2 Cu 3 O 7 -YBa 2 Cu 3 O 7 edge junctions of 0.4x10 μm 2 cross section were prepared in situ by a multistep laser ablation deposition process. The fabrication time was about 3 h and the yield of good devices was 50%. Typical junctions reached zero resistance at 72 K and had a critical current density J c of 300 A/cm 2 at 70 K. Their J c as a function of temperature increased slowly with decreasing temperature down to 65 K and much faster below it. In the region of low J c we observed suppression of the critical current by a magnetic field. Under microwave radiation clear Shapiro steps were observed whose magnitude versus the microwave field agreed qualitatively with the resistively shunted junction model of a current biased junction

Musical molecules: the molecular junction as an active component in audio distortion circuits

International Nuclear Information System (INIS)

Bergren, Adam Johan; Zeer-Wanklyn, Lucas; Pekas, Nikola; Szeto, Bryan; McCreery, Richard L; Semple, Mitchell

2016-01-01

Molecular junctions that have a non-linear current–voltage characteristic consistent with quantum mechanical tunneling are demonstrated as analog audio clipping elements in overdrive circuits widely used in electronic music, particularly with electric guitars. The performance of large-area molecular junctions fabricated at the wafer level is compared to currently standard semiconductor diode clippers, showing a difference in the sound character. The harmonic distributions resulting from the use of traditional and molecular clipping elements are reported and discussed, and differences in performance are noted that result from the underlying physics that controls the electronic properties of each clipping component. In addition, the ability to tune the sound using the molecular junction is demonstrated. Finally, the hybrid circuit is compared to an overdriven tube amplifier, which has been the standard reference electric guitar clipped tone for over 60 years. In order to investigate the feasibility of manufacturing molecular junctions for use in commercial applications, devices are fabricated using a low-density format at the wafer level, where 38 dies per wafer, each containing two molecular junctions, are made with exceptional non-shorted yield (99.4%, representing 718 out of 722 tested devices) without requiring clean room facilities. (paper)

Musical molecules: the molecular junction as an active component in audio distortion circuits

Science.gov (United States)

Bergren, Adam Johan; Zeer-Wanklyn, Lucas; Semple, Mitchell; Pekas, Nikola; Szeto, Bryan; McCreery, Richard L.

2016-03-01

Molecular junctions that have a non-linear current-voltage characteristic consistent with quantum mechanical tunneling are demonstrated as analog audio clipping elements in overdrive circuits widely used in electronic music, particularly with electric guitars. The performance of large-area molecular junctions fabricated at the wafer level is compared to currently standard semiconductor diode clippers, showing a difference in the sound character. The harmonic distributions resulting from the use of traditional and molecular clipping elements are reported and discussed, and differences in performance are noted that result from the underlying physics that controls the electronic properties of each clipping component. In addition, the ability to tune the sound using the molecular junction is demonstrated. Finally, the hybrid circuit is compared to an overdriven tube amplifier, which has been the standard reference electric guitar clipped tone for over 60 years. In order to investigate the feasibility of manufacturing molecular junctions for use in commercial applications, devices are fabricated using a low-density format at the wafer level, where 38 dies per wafer, each containing two molecular junctions, are made with exceptional non-shorted yield (99.4%, representing 718 out of 722 tested devices) without requiring clean room facilities.

3-Dimensional Microorifice Fabricated Utilizing Single Undercut Etching Process for Producing Ultrasmall Water and Chitosan Droplets

Directory of Open Access Journals (Sweden)

Che-Hsin Lin

2013-01-01

Full Text Available This research reports a microfluidic device for producing small droplets via a microorifice and a T-junction structure. The orifice is fabricated using an isotropic undercut etching process of amorphous glass materials. Since the equivalent hydraulic diameter of the produced microorifice can be as small as 1.1 μm, the microdevice can easily produce droplets of the size smaller than 10 μm in diameter. In addition, a permanent hydrophobic coating technique is also applied to modify the main channel to be hydrophobic to enhance the formation of water-based droplets. Experimental results show that the developed microfluidic chip with the ultrasmall orifice can steadily produce water-in-oil droplets with different sizes. Uniform water-in-oil droplets with the size from 60 μm to 6.5 μm in diameter can be formed by adjusting the flow rate ratio of the continuous phase and the disperse phases from 1 to 7. Moreover, curable linear polymer of chitosan droplets with the size smaller than 100 μm can also be successfully produced using the developed microchip device. The microfluidic T-junction with a micro-orifice developed in the present study provides a simple yet efficient way to produce various droplets of different sizes.

Re-qualification of MTR-type fuel plates fabrication process

International Nuclear Information System (INIS)

Elseaidy, I.M.; Ghoneim, M.M.

2010-01-01

The fabricability issues with increased uranium loading due to use low enrichment of uranium (LEU), i.e. less than 20 % of U 235 , increase the problems which occur during compact manufacturing, roll bonding of the fuel plates, potential difficulty in forming during rolling process, mechanical integrity of the core during fabrication, potential difficulty in meat homogeneity, and the ability to fabricate plates with thicker core as a means of increasing total uranium loading. To produce MTR- type fuel plates with high uranium loading (HUL) and keep the required quality of these plates, many of qualification process must be done in the commissioning step of fuel fabrication plant. After that any changing of the fabrication parameters, for example changing of any of the raw materials, devises, operators, and etc., a re- qualification process should be done in order to keep the quality of produced plates. Objective of the present work is the general description of the activities to be accomplished for re-qualification of manufacturing MTR- type nuclear fuel plates. For each process to be re-qualified, a detailed of re-qualification process were established. (author)

Two-dimensional non-volatile programmable p-n junctions

Science.gov (United States)

Li, Dong; Chen, Mingyuan; Sun, Zhengzong; Yu, Peng; Liu, Zheng; Ajayan, Pulickel M.; Zhang, Zengxing

2017-09-01

Semiconductor p-n junctions are the elementary building blocks of most electronic and optoelectronic devices. The need for their miniaturization has fuelled the rapid growth of interest in two-dimensional (2D) materials. However, the performance of a p-n junction considerably degrades as its thickness approaches a few nanometres and traditional technologies, such as doping and implantation, become invalid at the nanoscale. Here we report stable non-volatile programmable p-n junctions fabricated from the vertically stacked all-2D semiconductor/insulator/metal layers (WSe2/hexagonal boron nitride/graphene) in a semifloating gate field-effect transistor configuration. The junction exhibits a good rectifying behaviour with a rectification ratio of 104 and photovoltaic properties with a power conversion efficiency up to 4.1% under a 6.8 nW light. Based on the non-volatile programmable properties controlled by gate voltages, the 2D p-n junctions have been exploited for various electronic and optoelectronic applications, such as memories, photovoltaics, logic rectifiers and logic optoelectronic circuits.

Junction structures based on the high-Tc superconductor YBa2Cu3O7-δ

International Nuclear Information System (INIS)

Gijs, M.A.M.

1993-01-01

An overview is given of the investigations of the Josephson effect in junction structures based on the high-T c superconductor YBa 2 Cu 3 O 7-δ , which were carried out at the Philips Research Laboratories in Eindhoven in the 1988-1990 period. The reported results are presented in their international scientific context, without attempting a complete review of the subject. However, the various junction types studied give a good idea of the scientific pursuits of high-T c junction researchers in this period. The following junctions are considered: in the category of 'weak link'-type junctions we have investigated YBa 2 Cu 3 O 7-δ -Ag-Nb point contact junctions, YBa 2 Cu 3 O 7-δ Dayem bridges and YBa 2 Cu 3 O 7-δ -Ag(-Al)-Pb proximity junctions. In these structures we combine a high-T c with a low-T c superconductor. We also fabricated planar 'all high-T c ' YBa 2 Cu 3 O 7-δ -Ag-YBa 2 Cu 3 O 7-δ junctions using a submicron structuring process. Next we have made tunnel junctions to study density of states effects of the high-T c superconductor : YBa 2 Cu 3 O 7-δ -Pb junctions using the degraded YBa 2 Cu 3 O 7-δ -Pb interface as a tunnel barrier, and YBa 2 Cu 3 O 7-δ -Ag-Al/Al 2 O 3 /Pb tunnel junctions based on the superconducting proximity effect. Our junction structures are electrically characterized and mostly studied in microwave and magnetic fields. Results are compared with current theoretical models. (orig.)

Step edge Josephson junctions and high temperature superconducting quantum interference device (SQUID) gradiometers

International Nuclear Information System (INIS)

Millar, Alasdair J.

2002-01-01

This thesis is concerned with the development of Superconducting Quantum Interference Device (SQUID) gradiometers based on the high temperature superconductor YBa 2 Cu 3 O 7-δ (YBCO). A step-edge Josephson junction fabrication process was developed to produce sufficiently steep (>60 deg) step-edges such that junctions exhibited RSJ-like current-voltage characteristics. The mean I C R N product of a sample of twenty step-edge junctions was 130μV. Step-edge dc SQUIDs with inductances between 67pH and 114pH were fabricated. Generally the SQUIDs had an intrinsic white flux noise in the 10-30μΦ 0 /√Hz range, with the best device, a 70pH SQUID, exhibiting a white flux noise of 5μΦ 0 /√Hz. Different first-order SQUID gradiometer designs were fabricated from single layers of YBCO. Two single-layer gradiometer (SLG) designs were fabricated on 10x10mm 2 substrates. The best balance and lowest gradient sensitivity measured for these devices were 1/300 and 308fT/cm√Hz (at 1 kHz) respectively. The larger baseline and larger flux capture area of the pick-up loops in a large area SLG design, fabricated on 30x10mm 2 substrates, resulted in significant improvements in the balance and gradient field sensitivity with 1/1000 and 50fT/cm√Hz (at 1kHz) measured respectively. To reduce the uniform field effective area of SLOs and therefore reduce the direct pick-up of environmental field noise when operated unshielded, a novel gradiometric SQUID (G-SQUID) device was developed. Fabricated from a single layer of YBCO, the G-SQUIDs with inductances of 67pH, had small uniform field effective areas of approximately 2μm 2 - more than two orders of magnitude smaller than the uniform field effective areas of conventional narrow linewidth SQUIDs of similar inductance. Two designs of G-SQUID were fabricated on 10x10mm 2 substrates. Due to their small effective areas, when cooled unshielded these devices showed no increase in their white flux noise. The best balance achieved for a G

Oxidation process of AlOx-based magnetic tunnel junctions studied by photoconductance

NARCIS (Netherlands)

Koller, P.H.P.; Vanhelmont, F.W.M.; Boeve, H.; Lumens, P.G.E.; Jonge, de W.J.M.

2003-01-01

The oxidation process of Co/AlOx/Co magnetic tunnel junctions has been investigated by photoconductance, in addition to traditional transport measurements. The shape of the photoconductance curves is explained within the framework of a simple qualitative model, assuming an oxidation time dependent

Nonlinear electrical properties of Si three-terminal junction devices

DEFF Research Database (Denmark)

Fantao, Meng; Jie, Sun; Graczyk, Mariusz

2010-01-01

This letter reports on the realization and characterization of silicon three-terminal junction devices made in a silicon-on-insulator wafer. Room temperature electrical measurements show that the fabricated devices exhibit pronounced nonlinear electrical properties inherent to ballistic electron...... transport in a three-terminal ballistic junction (TBJ) device. The results show that room temperature functional TBJ devices can be realized in a semiconductor material other than high-mobility III-V semiconductor heterostructures and provide a simple design principle for compact silicon devices...

Macroscopic quantum tunneling in Josephson tunnel junctions and Coulomb blockade in single small tunnel junctions

International Nuclear Information System (INIS)

Cleland, A.N.

1991-01-01

Experiments investigated the process of macroscopic quantum tunneling in a moderately-damped, resistively shunted, Josephson junction are described, followed by a discussion of experiments performed on very-small-capacitance normal-metal tunnel junctions. The experiments on the resistively-shunted Josephson junction were designed to investigate a quantum process, that of the tunneling of the Josephson-phase variable under a potential barrier, in a system in which dissipation plays a major role in the dynamics of motion. All the parameters of the junction were measured using the classical phenomena of thermal activation and resonant activation. Theoretical predictions are compared with the experimental results, showing good agreement with no adjustable parameters. The experiments on small-capacitance tunnel junctions extend the measurements on the large-area Josephson junctions from the region in which the phase variable has a fairly well-defined value, i.e. its wave function has a narrow width, to the region where its value is almost completely unknown. The charge on the junction becomes well-defined and is predicted to quantize the current through the junction, giving rise to the Coulomb blockade at low bias

Flat-plate solar array project process development area process research of non-CZ silicon material

Science.gov (United States)

1985-01-01

Three sets of samples were laser processed and then cell processed. The laser processing was carried out on P-type and N-type web at laser power levels from 0.5 joule/sq cm to 2.5 joule/sq cm. Six different liquid dopants were tested (3 phosphorus dopants, 2 boron dopants, 1 aluminum dopant). The laser processed web strips were fabricated into solar cells immediately after laser processing and after various annealing cycles. Spreading resistance measurements made on a number of these samples indicate that the N(+)P (phosphorus doped) junction is approx. 0.2 micrometers deep and suitable for solar cells. However, the P(+)N (or P(+)P) junction is very shallow ( 0.1 micrometers) with a low surface concentration and resulting high resistance. Due to this effect, the fabricated cells are of low efficiency. The maximum efficiency attained was 9.6% on P-type web after a 700 C anneal. The main reason for the low efficiency was a high series resistance in the cell due to a high resistance back contact.

High-performance DC SQUIDs with submicrometer niobium Josephson junctions

Energy Technology Data Exchange (ETDEWEB)

de Waal, V.J.; Klapwijk, T.M.; van den Hamer, P.

1983-11-01

We report on the fabrication and performance of low-noise, all-niobium, thin-film planar dc SQUIDs with submicrometer Josephson junctions. The junctions are evaporated obliquely through a metal shadow evaporation mask, which is made using optical lithography with 0.5 ..mu..m tolerance. The Josephson junction barrier is formed by evaporating a thin silicon film and with a subsequent oxidation in a glow discharge. The junction parameters can be reproduced within a factor of two. Typical critical currents of the SQUIDs are about 3 ..mu..A and the resistances are about 100 ..cap omega... With SQUIDs having an inductance of 1 nH the voltage modulation is a least 60 ..mu..V. An intrinsic energy resolution of 4 x 10/sup -32/ J/Hz has been reached. The SQUIDs are coupled to wire-wound input coils or with thin-film input coils. The thin-film input coil consists of a niobium spiral of 20 turns on a separate substrate. In both cases the coil is glued onto a 2-nH SQUID with a coupling efficiency of at least 0.5. Referred to the thin-film input coil, the best coupled energy resolution achieved is 1.2 x 10/sup -30/ J/Hz measured in a flux-locked loop at frequencies above 10 Hz. As far as we know, this is the best figure achieved with an all-refractory-metal thin-film SQUID. The fabrication technique used is suited for making circuits with SQUID and pickup coil on the same substrate. We describe a compact, planar, first-order gradiometer integrated with a SQUID on a single substrate. The gradient noise of this device is 3 x 10/sup -12/ Tm/sup -1/. The gradiometer has a size of 12 mm x 17 mm, is simple to fabricate, an is suitable for biomedical applications.

High-performance dc SQUIDs with submicrometer niobium Josephson junctions

Science.gov (United States)

de Waal, V. J.; Klapwijk, T. M.; van den Hamer, P.

1983-11-01

We report on the fabrication and performance of low-noise, all-niobium, thin-film planar dc SQUIDs with submicrometer Josephson junctions. The junctions are evaporated obliquely through a metal shadow evaporation mask, which is made using optical lithography with 0.5 µm tolerance. The Josephson junction barrier is formed by evaporating a thin silicon film and with a subsequent oxidation in a glow discharge. The junction parameters can be reproduced within a factor of two. Typical critical currents of the SQUIDs are about 3 µA and the resistances are about 100 Ω. With SQUIDs having an inductance of 1 nH the voltage modulation is at least 60 µV. An intrinsic energy resolution of 4×10-32 J/Hz has been reached. The SQUIDs are coupled to wire-wound input coils or with thin-film input coils. The thin-film input coil consists of a niobium spiral of 20 turns on a separate substrate. In both cases the coil is glued onto a 2-nH SQUID with a coupling efficiency of at least 0.5. Referred to the thin-film input coil, the best coupled energy resolution achieved is 1.2×10-30 J/Hz measured in a flux-locked loop at frequencies above 10 Hz. As far as we know, this is the best figure achieved with an all-refractory-metal thin-film SQUID. The fabrication technique used is suited for making circuits with SQUID and pickup coil on the same substrate. We describe a compact, planar, first-order gradiometer integrated with a SQUID on a single substrate. The gradient noise of this device is 3×10-12 T m-1. The gradiometer has a size of 12 mm×17 mm, is simple to fabricate, and is suitable for biomedical applications.

Robust integration schemes for junction-based modulators in a 200mm CMOS compatible silicon photonic platform (Conference Presentation)

Science.gov (United States)

Szelag, Bertrand; Abraham, Alexis; Brision, Stéphane; Gindre, Paul; Blampey, Benjamin; Myko, André; Olivier, Segolene; Kopp, Christophe

2017-05-01

Silicon photonic is becoming a reality for next generation communication system addressing the increasing needs of HPC (High Performance Computing) systems and datacenters. CMOS compatible photonic platforms are developed in many foundries integrating passive and active devices. The use of existing and qualified microelectronics process guarantees cost efficient and mature photonic technologies. Meanwhile, photonic devices have their own fabrication constraints, not similar to those of cmos devices, which can affect their performances. In this paper, we are addressing the integration of PN junction Mach Zehnder modulator in a 200mm CMOS compatible photonic platform. Implantation based device characteristics are impacted by many process variations among which screening layer thickness, dopant diffusion, implantation mask overlay. CMOS devices are generally quite robust with respect to these processes thanks to dedicated design rules. For photonic devices, the situation is different since, most of the time, doped areas must be carefully located within waveguides and CMOS solutions like self-alignment to the gate cannot be applied. In this work, we present different robust integration solutions for junction-based modulators. A simulation setup has been built in order to optimize of the process conditions. It consist in a Mathlab interface coupling process and device electro-optic simulators in order to run many iterations. Illustrations of modulator characteristic variations with process parameters are done using this simulation setup. Parameters under study are, for instance, X and Y direction lithography shifts, screening oxide and slab thicknesses. A robust process and design approach leading to a pn junction Mach Zehnder modulator insensitive to lithography misalignment is then proposed. Simulation results are compared with experimental datas. Indeed, various modulators have been fabricated with different process conditions and integration schemes. Extensive

Macroscopic quantum tunneling in Josephson tunnel junctions and Coulomb blockade in single small tunnel junctions

International Nuclear Information System (INIS)

Cleland, A.N.

1991-04-01

Experiments investigating the process of macroscopic quantum tunneling in a moderately-damped, resistively shunted, Josephson junction are described, followed by a discussion of experiments performed on very small capacitance normal-metal tunnel junctions. The experiments on the resistively-shunted Josephson junction were designed to investigate a quantum process, that of the tunneling of the Josephson phase variable under a potential barrier, in a system in which dissipation plays a major role in the dynamics of motion. All the parameters of the junction were measured using the classical phenomena of thermal activation and resonant activation. Theoretical predictions are compared with the experimental results, showing good agreement with no adjustable parameters; the tunneling rate in the moderately damped (Q ∼ 1) junction is seen to be reduced by a factor of 300 from that predicted for an undamped junction. The phase is seen to be a good quantum-mechanical variable. The experiments on small capacitance tunnel junctions extend the measurements on the larger-area Josephson junctions from the region in which the phase variable has a fairly well-defined value, i.e. its wavefunction has a narrow width, to the region where its value is almost completely unknown. The charge on the junction becomes well-defined and is predicted to quantize the current through the junction, giving rise to the Coulomb blockade at low bias. I present the first clear observation of the Coulomb blockade in single junctions. The electrical environment of the tunnel junction, however, strongly affects the behavior of the junction: higher resistance leads are observed to greatly sharpen the Coulomb blockade over that seen with lower resistance leads. I present theoretical descriptions of how the environment influences the junctions; comparisons with the experimental results are in reasonable agreement

Macroscopic Quantum Tunneling in Superconducting Junctions of β-Ag2Se Topological Insulator Nanowire.

Science.gov (United States)

Kim, Jihwan; Kim, Bum-Kyu; Kim, Hong-Seok; Hwang, Ahreum; Kim, Bongsoo; Doh, Yong-Joo

2017-11-08

We report on the fabrication and electrical transport properties of superconducting junctions made of β-Ag 2 Se topological insulator (TI) nanowires in contact with Al superconducting electrodes. The temperature dependence of the critical current indicates that the superconducting junction belongs to a short and diffusive junction regime. As a characteristic feature of the narrow junction, the critical current decreases monotonously with increasing magnetic field. The stochastic distribution of the switching current exhibits the macroscopic quantum tunneling behavior, which is robust up to T = 0.8 K. Our observations indicate that the TI nanowire-based Josephson junctions can be a promising building block for the development of nanohybrid superconducting quantum bits.

Thermal and radiation process for nano-/micro-fabrication of crosslinked PTFE

International Nuclear Information System (INIS)

Kobayashi, Akinobu; Oshima, Akihiro; Okubo, Satoshi; Tsubokura, Hidehiro; Takahashi, Tomohiro; Oyama, Tomoko Gowa; Tagawa, Seiichi; Washio, Masakazu

2013-01-01

Nano-/micro-fabrication process of crosslinked poly(tetrafluoroethylene) (RX-PTFE) is proposed as a novel method using combined process which is thermal and radiation process for fabrication of RX-PTFE (TRaf process). Nano- and micro-scale patterns of silicon wafers fabricated by EB lithography were used as the molds for TRaf process. Poly(tetrafluoroethylene) (PTFE) dispersion was dropped on the fabricated molds, and then PTFE was crosslinked with doses from 105 kGy to 1500 kGy in its molten state at 340 °C in nitrogen atmosphere. The obtained nano- and micro-structures by TRaf process were compared with those by the conventional thermal fabrication process. Average surface roughness (R a ) of obtained structures was evaluated with atomic force microscope (AFM) and scanning electron microscope (SEM). R a of obtained structures with the crosslinking dose of 600 kGy showed less than 1.2 nm. The fine nano-/micro-structures of crosslinked PTFE were successfully obtained by TRaf process

Gap Junctions

Science.gov (United States)

Nielsen, Morten Schak; Axelsen, Lene Nygaard; Sorgen, Paul L.; Verma, Vandana; Delmar, Mario; Holstein-Rathlou, Niels-Henrik

2013-01-01

Gap junctions are essential to the function of multicellular animals, which require a high degree of coordination between cells. In vertebrates, gap junctions comprise connexins and currently 21 connexins are known in humans. The functions of gap junctions are highly diverse and include exchange of metabolites and electrical signals between cells, as well as functions, which are apparently unrelated to intercellular communication. Given the diversity of gap junction physiology, regulation of gap junction activity is complex. The structure of the various connexins is known to some extent; and structural rearrangements and intramolecular interactions are important for regulation of channel function. Intercellular coupling is further regulated by the number and activity of channels present in gap junctional plaques. The number of connexins in cell-cell channels is regulated by controlling transcription, translation, trafficking, and degradation; and all of these processes are under strict control. Once in the membrane, channel activity is determined by the conductive properties of the connexin involved, which can be regulated by voltage and chemical gating, as well as a large number of posttranslational modifications. The aim of the present article is to review our current knowledge on the structure, regulation, function, and pharmacology of gap junctions. This will be supported by examples of how different connexins and their regulation act in concert to achieve appropriate physiological control, and how disturbances of connexin function can lead to disease. © 2012 American Physiological Society. Compr Physiol 2:1981-2035, 2012. PMID:23723031

Optimal fabrication processes for unidirectional metal-matrix composites: A computational simulation

Science.gov (United States)

Saravanos, D. A.; Murthy, P. L. N.; Morel, M.

1990-01-01

A method is proposed for optimizing the fabrication process of unidirectional metal matrix composites. The temperature and pressure histories are optimized such that the residual microstresses of the composite at the end of the fabrication process are minimized and the material integrity throughout the process is ensured. The response of the composite during the fabrication is simulated based on a nonlinear micromechanics theory. The optimal fabrication problem is formulated and solved with non-linear programming. Application cases regarding the optimization of the fabrication cool-down phases of unidirectional ultra-high modulus graphite/copper and silicon carbide/titanium composites are presented.

Optimal fabrication processes for unidirectional metal-matrix composites - A computational simulation

Science.gov (United States)

Saravanos, D. A.; Murthy, P. L. N.; Morel, M.

1990-01-01

A method is proposed for optimizing the fabrication process of unidirectional metal matrix composites. The temperature and pressure histories are optimized such that the residual microstresses of the composite at the end of the fabrication process are minimized and the material integrity throughout the process is ensured. The response of the composite during the fabrication is simulated based on a nonlinear micromechanics theory. The optimal fabrication problem is formulated and solved with nonlinear programming. Application cases regarding the optimization of the fabrication cool-down phases of unidirectional ultra-high modulus graphite/copper and silicon carbide/titanium composites are presented.

Realization of φ Josephson junctions with a ferromagnetic interlayer

International Nuclear Information System (INIS)

Sickinger, Hanna Sabine

2014-01-01

In this thesis, φ Josephson junctions based on 0-π junctions with a ferromagnetic interlayer are studied. Josephson junctions (JJs) with a ferromagnetic interlayer can have a phase drop of 0 or π in the ground state, depending on the thickness of the ferromagnet (0 JJs or π JJs). Also, 0-π JJs can be realized, where one segment of the junction (if taken separately) is in the 0 state, while the other segment is in the π state. One can use these π Josephson junctions as a device in superconducting circuits, where it provides a constant phase shift, i.e., it acts as a π phase battery. A generalization of a π JJ is a φ JJ, which has the phase ±φ in the ground state. The value of φ can be chosen by design and tuned in the interval 0<φ<π. The φ JJs used in this experiment were fabricated as 0-π JJs with asymmetric current densities in the 0 and π facets. This system can be described by an effective current-phase relation which is tunable by an externally applied magnetic field. The first experimental evidence of such a φ JJ is presented in this thesis. In particular it is demonstrated that (a) a φ JJ has two ground states +φ and -φ, (b) the unknown state can be detected (read out) by measuring the critical current I c (I c+ or I c- ), and (c) a particular state can be prepared by applying a magnetic field or a special bias sweep sequence. These properties of a φ JJ can be utilized, for example, as a memory cell (classical bit). Furthermore, a φ Josephson junction can be used as a deterministic ratchet. This is due to the tunable asymmetry of the potential that can be changed by the external magnetic field. Rectification curves are observed for the overdamped and the underdamped case. Moreover, experimental data of the retrapping process of the phase of a φ Josephson junction depending on the temperature is presented.

Size dependence of magnetization reversal of ring shaped magnetic tunnel junction

International Nuclear Information System (INIS)

Chen, C.C.; Kuo, C.Y.; Chang, Y.C.; Chang, C.C.; Horng, Lance; Wu, Teho; Chern, G.; Huang, C.Y.; Tsunoda, M.; Takahashi, M.; Wu, J.C.

2007-01-01

The size dependence of magnetization reversal of magnetic tunnel junction (MTJ) rings has been investigated. The MTJ rings, with outer diameter of 4, 2 and 1 μm and inner diameter of 1.5, 1 and 0.5 μm were fabricated by a top-down technique. The magnetoresistance curves manifest all of the magnetic domain configurations during magnetization reversal in different sized rings. Various transition processes were observed, such as four transition, three transition and two transition in the largest, middle and smallest MTJ ring, respectively. Furthermore, the biasing fields observed from major loops decrease with decreasing size, which may result from edge roughness produced in the ion-milling process

Optical photon detection in Al superconducting tunnel junctions

International Nuclear Information System (INIS)

Brammertz, G.; Peacock, A.; Verhoeve, P.; Martin, D.; Venn, R.

2004-01-01

We report on the successful fabrication of low leakage aluminium superconducting tunnel junctions with very homogeneous and transparent insulating barriers. The junctions were tested in an adiabatic demagnetisation refrigerator with a base temperature of 35 mK. The normal resistance of the junctions is equal to ∼7 μΩ cm 2 with leakage currents in the bias voltage domain as low as 100 fA/μm 2 . Optical single photon counting experiments show a very high responsivity with charge amplification factors in excess of 100. The total resolving power λ/Δλ (including electronic noise) for 500 nm photons is equal to 13 compared to a theoretical tunnel limited value of 34. The current devices are found to be limited spectroscopically by spatial inhomogeneities in the detectors response

Study and fabrication of tunnel diodes made on germanium using a collective planar technique

International Nuclear Information System (INIS)

Vrahides, Michel

1973-01-01

The main results of the theory on tunnel diodes are presented in the first chapter. From these results are deduced the technological requirements that any fabrication process should meet to make tunnel diodes. These requirements show up that, among the three techniques for junction making (thermal diffusion of impurities, epitaxy, alloying), the last one is presently the best fitted to the fabrication of tunnel junctions. By analyzing the defects created by various alloying technologies presently used, together with a study of the benefits due to a use of chemical photolithography, evaporation under vacuum and masking by deposited oxide, it is possible to design a tentative scheme of a 0.5 ns tunnel diode. Then, in a second chapter, is presented the collective process for fabrication that has been used on monocrystalline, P-type, germanium wafers. 8 000 tunnel diodes may be positioned on a 1.5 inch diameter wafer by using that process. A description of the various apparatus used is also given. The experimental results are described in the third chapter. The influence of the various fabrication parameters on the electrical characteristics of the diodes are discussed. It is shown, by studying the fabrication yields and parameter spreading, that 80 per cent of the diodes exhibit a standard tunnel diode behaviour and that 90 per cent of these present a peak current dispersion less than ± 25 per cent. When measuring at the peak current drifts under temperature stresses, a good analogy with conventional tunnel diode is found. Some measurements of switching times have led to values as low as 0.6 nanoseconds. (author) [fr

USHPRR FUEL FABRICATION PILLAR: FABRICATION STATUS, PROCESS OPTIMIZATIONS, AND FUTURE PLANS

Energy Technology Data Exchange (ETDEWEB)

Wight, Jared M.; Joshi, Vineet V.; Lavender, Curt A.

2018-03-12

The Fuel Fabrication (FF) Pillar, a project within the U.S. High Performance Research Reactor Conversion program of the National Nuclear Security Administration’s Office of Material Management and Minimization, is tasked with the scale-up and commercialization of high-density monolithic U-Mo fuel for the conversion of appropriate research reactors to use of low-enriched fuel. The FF Pillar has made significant steps to demonstrate and optimize the baseline co-rolling process using commercial-scale equipment at both the Y-12 National Security Complex (Y-12) and BWX Technologies (BWXT). These demonstrations include the fabrication of the next irradiation experiment, Mini-Plate 1 (MP-1), and casting optimizations at Y-12. The FF Pillar uses a detailed process flow diagram to identify potential gaps in processing knowledge or demonstration, which helps direct the strategic research agenda of the FF Pillar. This paper describes the significant progress made toward understanding the fuel characteristics, and models developed to make informed decisions, increase process yield, and decrease lifecycle waste and costs.

Cryogenic Dark Matter Search detector fabrication process and recent improvements

Energy Technology Data Exchange (ETDEWEB)

Jastram, A., E-mail: akjastram@tamu.edu [Department of Physics and Astronomy, Texas A and M University, College Station, TX 77843 (United States); Harris, H.R.; Mahapatra, R.; Phillips, J.; Platt, M.; Prasad, K. [Department of Physics and Astronomy, Texas A and M University, College Station, TX 77843 (United States); Sander, J. [Department of Physics and Astronomy, Texas A and M University, College Station, TX 77843 (United States); Department of Physics, University of South Dakota, Vermillion, SD 57069 (United States); Upadhyayula, S. [Department of Physics and Astronomy, Texas A and M University, College Station, TX 77843 (United States)

2015-02-01

A dedicated facility has been commissioned for Cryogenic Dark Matter Search (CDMS) detector fabrication at Texas A and M University (TAMU). The fabrication process has been carefully tuned using this facility and its equipment. Production of successfully tested detectors has been demonstrated. Significant improvements in detector performance have been made using new fabrication methods/equipment and tuning of process parameters.

Photocurrent generation in lateral graphene p-n junction created by electron-beam irradiation

KAUST Repository

Yu, Xuechao; Shen, Youde; Liu, Tao; Wu, Tao; Jie Wang, Qi

2015-01-01

Graphene has been considered as an attractive material for optoelectronic applications such as photodetectors owing to its extraordinary properties, e.g. broadband absorption and ultrahigh mobility. However, challenges still remain in fundamental and practical aspects of the conventional graphene photodetectors which normally rely on the photoconductive mode of operation which has the drawback of e.g. high dark current. Here, we demonstrated the photovoltaic mode operation in graphene p-n junctions fabricated by a simple but effective electron irradiation method that induces n-type doping in intrinsic p-type graphene. The physical mechanism of the junction formation is owing to the substrate gating effect caused by electron irradiation. Photoresponse was obtained for this type of photodetector because the photoexcited electron-hole pairs can be separated in the graphene p-n junction by the built-in potential. The fabricated graphene p-n junction photodetectors exhibit a high detectivity up to ~3 × 1010 Jones (cm Hz1/2 W−1) at room temperature, which is on a par with that of the traditional III–V photodetectors. The demonstrated novel and simple scheme for obtaining graphene p-n junctions can be used for other optoelectronic devices such as solar cells and be applied to other two dimensional materials based devices.

Photocurrent generation in lateral graphene p-n junction created by electron-beam irradiation

KAUST Repository

Yu, Xuechao

2015-07-08

Graphene has been considered as an attractive material for optoelectronic applications such as photodetectors owing to its extraordinary properties, e.g. broadband absorption and ultrahigh mobility. However, challenges still remain in fundamental and practical aspects of the conventional graphene photodetectors which normally rely on the photoconductive mode of operation which has the drawback of e.g. high dark current. Here, we demonstrated the photovoltaic mode operation in graphene p-n junctions fabricated by a simple but effective electron irradiation method that induces n-type doping in intrinsic p-type graphene. The physical mechanism of the junction formation is owing to the substrate gating effect caused by electron irradiation. Photoresponse was obtained for this type of photodetector because the photoexcited electron-hole pairs can be separated in the graphene p-n junction by the built-in potential. The fabricated graphene p-n junction photodetectors exhibit a high detectivity up to ~3 × 1010 Jones (cm Hz1/2 W−1) at room temperature, which is on a par with that of the traditional III–V photodetectors. The demonstrated novel and simple scheme for obtaining graphene p-n junctions can be used for other optoelectronic devices such as solar cells and be applied to other two dimensional materials based devices.

Inhomogeneity in barrier height at graphene/Si (GaAs) Schottky junctions

OpenAIRE

Tomer, D.; Rajput, S.; Hudy, L. J.; Li, C. H.; Li, L.

2015-01-01

Graphene interfaced with a semiconductor forms a Schottky junction with rectifying properties, however, fluctuations in the Schottky barrier height are often observed. In this work, Schottky junctions are fabricated by transferring chemical vapor deposited monolayer graphene onto n-type Si and GaAs substrates. Temperature dependence of the barrier height and ideality factor are obtained by current-voltage measurements between 215 and 350 K. An increase in the zero bias barrier height and decr...

Studies on fabrication and characterization of a high-performance Al-doped ZnO/n-Si (1 1 1) heterojunction photodetector

International Nuclear Information System (INIS)

Ismail, Raid A; Al-Naimi, Ala; Al-Ani, Alaa A

2008-01-01

ZnO:Al/c-Si (1 1 1) isotype heterojunction photodetectors were fabricated by a chemical spray pyrolysis technique. High responsivity and good junction characteristics were obtained after post-deposition rapid thermal annealing (RTA). Dark and illuminated I–V characteristics were measured and analyzed. The ideality factor was deduced from I–V characteristics and found to be 1.3 after RTA. C–V measurements revealed that the junction was abrupt type. The energyband diagram, based on the Anderson model, was constructed from the electrical properties of the junction. Good photoresponses in UV and visible regions with responsivity were around 0.1 A W −1 and 0.47 A W −1 , respectively. The rise time of the detector was improved after RTA and found to be 50 ns. These results suggest that the Al dopant could be a good choice to fabricate the doped ZnO/Si devices for photodetection and other optoelectronic applications. We describe here the fabrication process and optoelectronic characteristics of the photodetector

Niobium nitride Josephson junctions with silicon and germanium barriers

International Nuclear Information System (INIS)

Cukauskas, E.J.; Carter, W.L.

1988-01-01

Niobium nitride based junctions with silicon, germanium, and composite silicon/germanium barriers were fabricated and characterized for several barrier compositions. The current-voltage characteristics were analyzed at several temperatures using the Simmons model and numerical integration of the WKB approximation for the average barrier height and effective thickness. The zero voltage conductance was measured from 1.5 K to 300 K and compared to the Mott hopping conductivity model and the Stratton tunneling temperature dependence. Conductivity followed Mott conductivity at temperatures above 60 K for junctions with less than 100 angstrom thick barriers

Nanometer-scale patterning of high-Tc superconductors for Josephson junction-based digital circuits

International Nuclear Information System (INIS)

Wendt, J.R.; Plut, T.A.; Corless, R.F.; Martens, J.S.; Berkowitz, S.; Char, K.; Johansson, M.; Hou, S.Y.; Phillips, J.M.

1994-01-01

A straightforward method for nanometer-scale patterning of high-T c superconductor thin films is discussed. The technique combines direct-write electron beam lithography with well-controlled aqueous etches and is applied to the fabrication of Josephson junction nanobridges in high-quality, epitaxial thin-film YBa 2 Cu 3 O 7 . We present the results of our studies of the dimensions, yield, uniformity, and mechanism of the junctions along with the performance of a representative digital circuit based on these junctions. Direct current junction parameter statistics measured at 77 K show critical currents of 27.5 μA±13% for a sample set of 220 junctions. The Josephson behavior of the nanobridge is believed to arise from the aggregation of oxygen vacancies in the nanometer-scale bridge

Study of 4H-SiC junction barrier Schottky diode using field guard ring termination

International Nuclear Information System (INIS)

Feng-Ping, Chen; Yu-Ming, Zhang; Hong-Liang, Lü; Yi-Men, Zhang; Jian-Hua, Huang

2010-01-01

This paper reports that the 4H-SiC Schottky barrier diode, PiN diode and junction barrier Schottky diode terminated by field guard rings are designed, fabricated and characterised. The measurements for forward and reverse characteristics have been done, and by comparison with each other, it shows that junction barrier Schottky diode has a lower reverse current density than that of the Schottky barrier diode and a higher forward drop than that of the PiN diode. High-temperature annealing is presented in this paper as well to figure out an optimised processing. The barrier height of 0.79 eV is formed with Ti in this work, the forward drop for the Schottky diode is 2.1 V, with an ideality factor of 3.2, and junction barrier Schottky diode with blocking voltage higher than 400 V was achieved by using field guard ring termination. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Growth and characterization of tin oxide thin films and fabrication of transparent p-SnO/n-ZnO p–n hetero junction

Energy Technology Data Exchange (ETDEWEB)

Sanal, K.C., E-mail: sanalcusat@gmail.com [Nanophotonic and Optoelectronic Devices Laboratory, Department of Physics, Cochin University of Science and Technology, Kerala 682 022 (India); Inter University Center for Nanomaterials and Devices (IUCND), Cochin University of Science and Technology (India); Jayaraj, M.K. [Nanophotonic and Optoelectronic Devices Laboratory, Department of Physics, Cochin University of Science and Technology, Kerala 682 022 (India)

2013-07-01

Highlights: • Growth of p-type semiconducting SnO thin films by rf sputtering. • Varying the type of charge carriers with oxygen partial pressure. • Atomic percentage of SnO{sub x} thin films from the XPS analysis. • Demonstration of transparent p–n hetero junctions fabricated in the structure glass/ITO/n-ZnO/p-SnO. -- Abstract: p-Type and n-type tin oxide thin films were deposited by rf-magnetron sputtering of metal tin target by varying the oxygen pressure. Chemical composition of SnO thin film according to the intensity of the XPS peak is about 48.85% and 51.15% for tin and oxygen respectively. Nearest neighbor distance of the atoms calculated from SAED patterns is 2.9 Åand 2.7 Åfor SnO and SnO{sub 2} respectively. The Raman scattering spectrum obtained from SnO thin films showed two peaks, one at 113 cm{sup −1} and the other at 211 cm{sup −1}. Band gap of as-deposited SnO{sub x} thin films vary from 1.6 eV to 3.2 eV on varying the oxygen partial pressure from 3% to 30% which indicates the oxidization of metallic phase Sn to SnO and SnO{sub 2}. p-Type conductivity of SnO thin films and n-type conductivity of SnO{sub 2} thin films were confirmed through Hall coefficient measurement. Transparent p–n hetero junction fabricated in the structure glass/ITO/n-ZnO/p-SnO shows rectification with forward to reverse current ratio as 12 at 4.5 V.

Wide-range and fast thermally-tunable silicon photonic microring resonators using the junction field effect.

Science.gov (United States)

Wang, Xiaoxi; Lentine, Anthony; DeRose, Christopher; Starbuck, Andrew L; Trotter, Douglas; Pomerene, Andrew; Mookherjea, Shayan

2016-10-03

Tunable silicon microring resonators with small, integrated micro-heaters which exhibit a junction field effect were made using a conventional silicon-on-insulator (SOI) photonic foundry fabrication process. The design of the resistive tuning section in the microrings included a "pinched" p-n junction, which limited the current at higher voltages and inhibited damage even when driven by a pre-emphasized voltage waveform. Dual-ring filters were studied for both large (>4.9 THz) and small (850 GHz) free-spectral ranges. Thermal red-shifting was demonstrated with microsecond-scale time constants, e.g., a dual-ring filter was tuned over 25 nm in 0.6 μs 10%-90% transition time, and with efficiency of 3.2 μW/GHz.

Fabrication and characterization of hybrid Nb-YBCO dc SQUIDs

International Nuclear Information System (INIS)

Frack, E.K.; Drake, R.E.; Patt, R.; Radparvar, M.

1991-01-01

This paper reports on the fabrication of hybrid low T c /high T c dc SQUIDs of two flavors. The first kind utilizes niobium tunnel junctions and a YBCO film strip as the most inductive portion of the SQUID loop. This configuration allows a direct measurement of the inductance of the YBCO microstrip from which the effective penetration depth can be calculated. The successful fabrication of these SQUIDs has required 1. superconducting Nb-to-YBCO contacts, 2. deposition and patterning of an SiO 2 insulation layer over YBCO, and 3. selective patterning of niobium and SiO 2 relative to YBCO. All these process steps are pertinent to the eventual use of YBCO thin films in electronic devices

The mechanical response of lithographically defined break junctions

International Nuclear Information System (INIS)

Huisman, E. H.; Bakker, F. L.; Wees, B. J. van; Trouwborst, M. L.; Molen, S. J. van der

2011-01-01

We present an experimental study on the mechanical response of lithographically defined break junctions by measuring atomic chain formation, tunneling traces and Gundlach oscillations. The calibration factor, i.e., the ratio between the electrode movement and the bending of the substrate, is found to be 2.5 times larger than expected from a simple mechanical model. This result is consistent with previous finite-element calculations. Comparing different samples, the mechanical response is found to be similar for electrode separations >4 A. However, for smaller electrode separations significant sample-to-sample variations appear. These variations are ascribed to differences in the shape of the two electrodes on the atomic scale which cannot be controlled by the fabrication process.

Adaptive Control of Freeze-Form Extrusion Fabrication Processes (Preprint)

National Research Council Canada - National Science Library

Zhao, Xiyue; Landers, Robert G; Leu, Ming C

2008-01-01

Freeze-form Extrusion Fabrication (FEF) is an additive manufacturing process that extrudes high solids loading aqueous ceramic pastes in a layer-by-layer fashion below the paste freezing temperature for component fabrication...

Josephson tunnel junctions with ferromagnetic interlayer

International Nuclear Information System (INIS)

Weides, M.P.

2006-01-01

Superconductivity and ferromagnetism are well-known physical properties of solid states that have been widely studied and long thought about as antagonistic phenomena due to difference in spin ordering. It turns out that the combination of both superconductor and ferromagnet leads to a very rich and interesting physics. One particular example, the phase oscillations of the superconducting order parameter inside the ferromagnet, will play a major role for the devices discussed in this work. In this thesis, I present Josephson junctions with a thin Al 2 O 3 tunnel barrier and a ferromagnetic interlayer, i.e. superconductor-insulator-ferromagnet-superconductor (SIFS) stacks. The fabrication of junctions was optimized regarding the insulation of electrodes and the homogeneity of the current transport. The junctions were either in the 0 or π coupled ground state, depending on the thickness of the ferromagnetic layer and on temperature. The influence of ferromagnetic layer thickness on the transport properties and the coupling (0, π) of SIFS tunnel junctions was studied. Furthermore, using a stepped ferromagnetic layer with well-chosen thicknesses, I obtained the so-called 0-π Josephson junction. At a certain temperature this 0-π junction can be made perfectly symmetric. In this case the ground state corresponds to a vortex of supercurrent creating a magnetic flux which is a fraction of the magnetic flux quantum Φ 0 . Such structures allow to study the physics of fractional vortices and to build various electronic circuits based on them. The SIFS junctions presented here have an exponentially vanishing damping at T → 0. The SIFS technology developed within the framework of this work may be used to construct classical and quantum devices such as oscillators, memory cells and qubits. (orig.)

Josephson tunnel junctions with ferromagnetic interlayer

Energy Technology Data Exchange (ETDEWEB)

Weides, M.P.

2006-07-01

Superconductivity and ferromagnetism are well-known physical properties of solid states that have been widely studied and long thought about as antagonistic phenomena due to difference in spin ordering. It turns out that the combination of both superconductor and ferromagnet leads to a very rich and interesting physics. One particular example, the phase oscillations of the superconducting order parameter inside the ferromagnet, will play a major role for the devices discussed in this work. In this thesis, I present Josephson junctions with a thin Al{sub 2}O{sub 3} tunnel barrier and a ferromagnetic interlayer, i.e. superconductor-insulator-ferromagnet-superconductor (SIFS) stacks. The fabrication of junctions was optimized regarding the insulation of electrodes and the homogeneity of the current transport. The junctions were either in the 0 or {pi} coupled ground state, depending on the thickness of the ferromagnetic layer and on temperature. The influence of ferromagnetic layer thickness on the transport properties and the coupling (0, {pi}) of SIFS tunnel junctions was studied. Furthermore, using a stepped ferromagnetic layer with well-chosen thicknesses, I obtained the so-called 0-{pi} Josephson junction. At a certain temperature this 0-{pi} junction can be made perfectly symmetric. In this case the ground state corresponds to a vortex of supercurrent creating a magnetic flux which is a fraction of the magnetic flux quantum {phi}{sub 0}. Such structures allow to study the physics of fractional vortices and to build various electronic circuits based on them. The SIFS junctions presented here have an exponentially vanishing damping at T {yields} 0. The SIFS technology developed within the framework of this work may be used to construct classical and quantum devices such as oscillators, memory cells and qubits. (orig.)

Quantum Junction Solar Cells

KAUST Repository

Tang, Jiang

2012-09-12

Colloidal quantum dot solids combine convenient solution-processing with quantum size effect tuning, offering avenues to high-efficiency multijunction cells based on a single materials synthesis and processing platform. The highest-performing colloidal quantum dot rectifying devices reported to date have relied on a junction between a quantum-tuned absorber and a bulk material (e.g., TiO 2); however, quantum tuning of the absorber then requires complete redesign of the bulk acceptor, compromising the benefits of facile quantum tuning. Here we report rectifying junctions constructed entirely using inherently band-aligned quantum-tuned materials. Realizing these quantum junction diodes relied upon the creation of an n-type quantum dot solid having a clean bandgap. We combine stable, chemically compatible, high-performance n-type and p-type materials to create the first quantum junction solar cells. We present a family of photovoltaic devices having widely tuned bandgaps of 0.6-1.6 eV that excel where conventional quantum-to-bulk devices fail to perform. Devices having optimal single-junction bandgaps exhibit certified AM1.5 solar power conversion efficiencies of 5.4%. Control over doping in quantum solids, and the successful integration of these materials to form stable quantum junctions, offers a powerful new degree of freedom to colloidal quantum dot optoelectronics. © 2012 American Chemical Society.

Development of the fabrication process of SiC composite by polycarbosilane

International Nuclear Information System (INIS)

Park, Ji Yeon; Kim, Weon Ju; Kim, Jung Il; Ryu, Woo Seog

2004-11-01

This technical report reviewed the fabrication process of fiber reinforced ceramic composites, characteristics of the PIP process, and applications of SiC f /SiC composite to develop a silicon carbide composite by PIP method. Additionally, characteristics and thermal behaviors of a PCS+SiC powder slurry and infiltration behaviors of slurry into the SiC fabric was evaluated. The stacking behaviors of SiC fabrics infiltrated a PCS+SiC powder slurry was also investigated. Using this stacked preforms, SiC f /SiC composites were fabricated by the electron beam curing and pyrolysis process and the thermal oxidation curing and pyrolysis process, respectively. And the characteristics of both composites were compared

Magnetometry with Low-Resistance Proximity Josephson Junction

Science.gov (United States)

Jabdaraghi, R. N.; Peltonen, J. T.; Golubev, D. S.; Pekola, J. P.

2018-06-01

We characterize a niobium-based superconducting quantum interference proximity transistor (Nb-SQUIPT) and its key constituent formed by a Nb-Cu-Nb SNS weak link. The Nb-SQUIPT and SNS devices are fabricated simultaneously in two separate lithography and deposition steps, relying on Ar ion cleaning of the Nb contact surfaces. The quality of the Nb-Cu interface is characterized by measuring the temperature-dependent equilibrium critical supercurrent of the SNS junction. In the Nb-SQUIPT device, we observe a maximum flux-to-current transfer function value of about 55 nA/Φ_0 in the sub-gap regime of bias voltages. This results in suppression of power dissipation down to a few fW. Low-bias operation of the device with a relatively low probe junction resistance decreases the dissipation by up to two orders of magnitude compared to a conventional device based on an Al-Cu-Al SNS junction and an Al tunnel probe (Al-SQUIPT).

Mask fabrication process

Science.gov (United States)

Cardinale, Gregory F.

2000-01-01

A method for fabricating masks and reticles useful for projection lithography systems. An absorber layer is conventionally patterned using a pattern and etch process. Following the step of patterning, the entire surface of the remaining top patterning photoresist layer as well as that portion of an underlying protective photoresist layer where absorber material has been etched away is exposed to UV radiation. The UV-exposed regions of the protective photoresist layer and the top patterning photoresist layer are then removed by solution development, thereby eliminating the need for an oxygen plasma etch and strip and chances for damaging the surface of the substrate or coatings.

Dry transfer of chemical-vapor-deposition-grown graphene onto liquid-sensitive surfaces for tunnel junction applications

International Nuclear Information System (INIS)

Feng, Ying; Chen, Ke

2015-01-01

We report a dry transfer method that can tranfer chemical vapor deposition (CVD) grown graphene onto liquid-sensitive surfaces. The graphene grown on copper (Cu) foil substrate was first transferred onto a freestanding 4 μm thick sputtered Cu film using the conventional wet transfer process, followed by a dry transfer process onto the target surface using a polydimethylsiloxane stamp. The dry-transferred graphene has similar properties to traditional wet-transferred graphene, characterized by scanning electron microscopy, atomic force microscopy, Raman spectroscopy, and electrical transport measurements. It has a sheet resistance of 1.6 ∼ 3.4 kΩ/□, hole density of (4.1 ∼ 5.3) × 10 12 cm −2 , and hole mobility of 460 ∼ 760 cm 2 V −1 s −1 without doping at room temperature. The results suggest that large-scale CVD-grown graphene can be transferred with good quality and without contaminating the target surface by any liquid. Mg/MgO/graphene tunnel junctions were fabricated using this transfer method. The junctions show good tunneling characteristics, which demonstrates the transfer technique can also be used to fabricate graphene devices on liquid-sensitive surfaces. (paper)

Giant electroresistance of super-tetragonal BiFeO3-based ferroelectric tunnel junctions.

Science.gov (United States)

Yamada, Hiroyuki; Garcia, Vincent; Fusil, Stéphane; Boyn, Sören; Marinova, Maya; Gloter, Alexandre; Xavier, Stéphane; Grollier, Julie; Jacquet, Eric; Carrétéro, Cécile; Deranlot, Cyrile; Bibes, Manuel; Barthélémy, Agnès

2013-06-25

Ferroelectric tunnel junctions enable a nondestructive readout of the ferroelectric state via a change of resistance induced by switching the ferroelectric polarization. We fabricated submicrometer solid-state ferroelectric tunnel junctions based on a recently discovered polymorph of BiFeO3 with giant axial ratio ("T-phase"). Applying voltage pulses to the junctions leads to the highest resistance changes (OFF/ON ratio >10,000) ever reported with ferroelectric tunnel junctions. Along with the good retention properties, this giant effect reinforces the interest in nonvolatile memories based on ferroelectric tunnel junctions. We also show that the changes in resistance scale with the nucleation and growth of ferroelectric domains in the ultrathin BiFeO3 (imaged by piezoresponse force microscopy), thereby suggesting potential as multilevel memory cells and memristors.

Spatially inhomogeneous barrier height in graphene/MoS2 Schottky junctions

Science.gov (United States)

Tomer, Dushyant; Rajput, Shivani; Li, Lian

Graphene interfaced with a semiconductor forms a Schottky junction with rectifying properties. In this study, graphene Schottky junctions are fabricated by transferring CVD monolayer graphene on mechanically exfoliated MoS2 multilayers. The forward bias current-voltage characteristics are measured in the temperature range of 210-300 K. An increase in the zero bias barrier height and decrease in the ideality factor are observed with increasing temperature. Such behavior is attributed to Schottky barrier inhomogeneities possibly due to graphene ripples and ridges at the junction interface as suggested by atomic force microscopy. Assuming a Gaussian distribution of the barrier height, mean barrier of 0.97+/-0.10 eV is found for the graphene MoS2 junction. Our findings provide significant insight on the barrier height inhomogeneities in graphene/two dimensional semiconductor Schottky junctions. U.S. Department of Energy, Office of Basic Energy Sciences, Division of Materials Sciences and Engineering Award No. DEFG02-07ER46228.

Inhomogeneity in barrier height at graphene/Si (GaAs) Schottky junctions.

Science.gov (United States)

Tomer, D; Rajput, S; Hudy, L J; Li, C H; Li, L

2015-05-29

Graphene (Gr) interfaced with a semiconductor forms a Schottky junction with rectifying properties, however, fluctuations in the Schottky barrier height are often observed. In this work, Schottky junctions are fabricated by transferring chemical vapor deposited monolayer Gr onto n-type Si and GaAs substrates. Temperature dependence of the barrier height and ideality factor are obtained by current-voltage measurements between 215 and 350 K. An increase in the zero bias barrier height and decrease in the ideality factor are observed with increasing temperature for both junctions. Such behavior is attributed to barrier inhomogeneities that arise from interfacial disorders as revealed by scanning tunneling microscopy/spectroscopy. Assuming a Gaussian distribution of the barrier heights, mean values of 1.14 ± 0.14 eV and 0.76 ± 0.10 eV are found for Gr/Si and Gr/GaAs junctions, respectively. These findings resolve the origin of barrier height inhomogeneities in these Schottky junctions.

Inhomogeneity in barrier height at graphene/Si (GaAs) Schottky junctions

International Nuclear Information System (INIS)

Tomer, D; Rajput, S; Hudy, L J; Li, L; Li, C H

2015-01-01

Graphene (Gr) interfaced with a semiconductor forms a Schottky junction with rectifying properties, however, fluctuations in the Schottky barrier height are often observed. In this work, Schottky junctions are fabricated by transferring chemical vapor deposited monolayer Gr onto n-type Si and GaAs substrates. Temperature dependence of the barrier height and ideality factor are obtained by current–voltage measurements between 215 and 350 K. An increase in the zero bias barrier height and decrease in the ideality factor are observed with increasing temperature for both junctions. Such behavior is attributed to barrier inhomogeneities that arise from interfacial disorders as revealed by scanning tunneling microscopy/spectroscopy. Assuming a Gaussian distribution of the barrier heights, mean values of 1.14 ± 0.14 eV and 0.76 ± 0.10 eV are found for Gr/Si and Gr/GaAs junctions, respectively. These findings resolve the origin of barrier height inhomogeneities in these Schottky junctions. (paper)

Fabrication of Circuit QED Quantum Processors, Part 2: Advanced Semiconductor Manufacturing Perspectives

Science.gov (United States)

Michalak, D. J.; Bruno, A.; Caudillo, R.; Elsherbini, A. A.; Falcon, J. A.; Nam, Y. S.; Poletto, S.; Roberts, J.; Thomas, N. K.; Yoscovits, Z. R.; Dicarlo, L.; Clarke, J. S.

Experimental quantum computing is rapidly approaching the integration of sufficient numbers of quantum bits for interesting applications, but many challenges still remain. These challenges include: realization of an extensible design for large array scale up, sufficient material process control, and discovery of integration schemes compatible with industrial 300 mm fabrication. We present recent developments in extensible circuits with vertical delivery. Toward the goal of developing a high-volume manufacturing process, we will present recent results on a new Josephson junction process that is compatible with current tooling. We will then present the improvements in NbTiN material uniformity that typical 300 mm fabrication tooling can provide. While initial results on few-qubit systems are encouraging, advanced processing control is expected to deliver the improvements in qubit uniformity, coherence time, and control required for larger systems. Research funded by Intel Corporation.

Mixed U/Pu oxide fuel fabrication facility co-processed feed, pelletized fuel

International Nuclear Information System (INIS)

1978-09-01

Two conceptual MOX fuel fabrication facilities are discussed in this study. The first facility in the main body of the report is for the fabrication of LWR uranium dioxide - plutonium dioxide (MOX) fuel using co-processed feed. The second facility in the addendum is for the fabrication of co-processed MOX fuel spiked with 60 Co. Both facilities produce pellet fuel. The spiked facility uses the same basic fabrication process as the conventional MOX plant but the fuel feed incorporates a high energy gamma emitter as a safeguard measure against diversion; additional shielding is added to protect personnel from radiation exposure, all operations are automated and remote, and normal maintenance is performed remotely. The report describes the fuel fabrication process and plant layout including scrap and waste processing; and maintenance, ventilation and safety measures

Increasing gap junctional coupling: a tool for dissecting the role of gap junctions

DEFF Research Database (Denmark)

Axelsen, Lene Nygaard; Haugan, Ketil; Stahlhut, Martin

2007-01-01

Much of our current knowledge about the physiological and pathophysiological role of gap junctions is based on experiments where coupling has been reduced by either chemical agents or genetic modification. This has brought evidence that gap junctions are important in many physiological processes....... In a number of cases, gap junctions have been implicated in the initiation and progress of disease, and experimental uncoupling has been used to investigate the exact role of coupling. The inverse approach, i.e., to increase coupling, has become possible in recent years and represents a new way of testing...... the role of gap junctions. The aim of this review is to summarize the current knowledge obtained with agents that selectively increase gap junctional intercellular coupling. Two approaches will be reviewed: increasing coupling by the use of antiarrhythmic peptide and its synthetic analogs...

Property-process relationships in nuclear fuel fabrication

International Nuclear Information System (INIS)

Tikare, V.

2015-01-01

Nuclear fuels are fabricated using many different techniques as they come in a large variety of shapes and compositions. The design and composition of nuclear fuels are predominantly dictated by the engineering requirements necessary for their function in reactors of various designs. Other engineering properties requirements originate from safety and security concerns, and the easy of handling, storing, transporting and disposing of the radioactive materials. In this chapter, the more common of these fuels will be briefly reviewed and the methods used to fabricate them will be presented. The fuels considered in this paper are oxide fuels used in LWRs and FRs, metal fuels in FRs and particulate fuels used in HTGRs. Fabrication of alternative fuel forms and use of standard fuels in alternative reactors will be discussed briefly. The primary motivation to advance fuel fabrication is to improve performance, reduce cost, reduce waste or enhance safety and security of the fuels. To achieve optimal performance, developing models to advance fuel fabrication has to be done in concert with developing fuel performance models. The specific properties and microstructures necessary for improved fuel performance must be identified using fuel performance models, while fuel fabrication models that can determine processing variables to give the desired microstructure and materials properties must be developed. (author)

Molecular beam epitaxial growth of Bi{sub 2}Te{sub 3} and Sb{sub 2}Te{sub 3} topological insulators on GaAs (111) substrates: a potential route to fabricate topological insulator p-n junction

Energy Technology Data Exchange (ETDEWEB)

Zeng, Zhaoquan; Morgan, Timothy A.; Li, Chen; Hirono, Yusuke; Hu, Xian; Hawkridge, Michael E.; Benamara, Mourad; Salamo, Gregory J. [Arkansas Institute for Nanoscale Material Sciences and Engineering, University of Arkansas, Fayetteville, AR 72701 (United States); Fan, Dongsheng; Yu, Shuiqing [Arkansas Institute for Nanoscale Material Sciences and Engineering, University of Arkansas, Fayetteville, AR 72701 (United States); Department of Electrical Engineering, University of Arkansas, Fayetteville, AR 72701 (United States); Zhao, Yanfei [International Center for Quantum Materials, School of Physics, Peking University, Beijing, 100871 (China); Lee, Joon Sue [The Center for Nanoscale Science and Department of Physics, The Pennsylvania State University, University Park, PA 16802 (United States); Wang, Jian [International Center for Quantum Materials, School of Physics, Peking University, Beijing, 100871 (China); The Center for Nanoscale Science and Department of Physics, The Pennsylvania State University, University Park, PA 16802 (United States); Wang, Zhiming M. [Arkansas Institute for Nanoscale Material Sciences and Engineering, University of Arkansas, Fayetteville, AR 72701 (United States); State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 (China); Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Science, Beijing 100083 (China)

2013-07-15

High quality Bi{sub 2}Te{sub 3} and Sb{sub 2}Te{sub 3} topological insulators films were epitaxially grown on GaAs (111) substrate using solid source molecular beam epitaxy. Their growth and behavior on both vicinal and non-vicinal GaAs (111) substrates were investigated by reflection high-energy electron diffraction, atomic force microscopy, X-ray diffraction, and high resolution transmission electron microscopy. It is found that non-vicinal GaAs (111) substrate is better than a vicinal substrate to provide high quality Bi{sub 2}Te{sub 3} and Sb{sub 2}Te{sub 3} films. Hall and magnetoresistance measurements indicate that p type Sb{sub 2}Te{sub 3} and n type Bi{sub 2}Te{sub 3} topological insulator films can be directly grown on a GaAs (111) substrate, which may pave a way to fabricate topological insulator p-n junction on the same substrate, compatible with the fabrication process of present semiconductor optoelectronic devices.

Mixing in T-junctions

NARCIS (Netherlands)

Kok, Jacobus B.W.; van der Wal, S.

1996-01-01

The transport processes that are involved in the mixing of two gases in a T-junction mixer are investigated. The turbulent flow field is calculated for the T-junction with the k- turbulence model by FLOW3D. In the mathematical model the transport of species is described with a mixture fraction

Preparation of large-area molecular junctions with metallic conducting Langmuir–Blodgett films

Energy Technology Data Exchange (ETDEWEB)

Mochizuki, Kengo [Division of Marine Technology, Tokyo University of Marine Science and Technology, 2-1-6 Etchujima Koto-ku, Tokyo 135-8533 (Japan); Ohnuki, Hitoshi, E-mail: ohnuki@kaiyodai.ac.jp [Division of Marine Technology, Tokyo University of Marine Science and Technology, 2-1-6 Etchujima Koto-ku, Tokyo 135-8533 (Japan); Shimizu, Daisuke [Division of Marine Technology, Tokyo University of Marine Science and Technology, 2-1-6 Etchujima Koto-ku, Tokyo 135-8533 (Japan); Imakubo, Tatsuro [Department of Materials and Technology, Nagaoka University of Technology, 1603-1 Kamitomioka, Nagaoka, Niigata 940-2188 (Japan); Tsuya, Daiju [National Institute for Materials Science,1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Izumi, Mitsuru [Division of Marine Technology, Tokyo University of Marine Science and Technology, 2-1-6 Etchujima Koto-ku, Tokyo 135-8533 (Japan)

2014-03-03

Metallic conducting Langmuir–Blodgett (LB) films were used as soft electrodes to fabricate molecular junctions with self-assembled monolayers (SAMs) of alkanethiols (CH{sub 3}(CH{sub 2}){sub n−1}SH) on an Au surface. Alkanethiols can form highly ordered, stable dielectric SAMs on metal surfaces over large areas. However, it is difficult to establish electrical contacts on such SAMs, which has limited their application. In this work, we used metallic conducting LB films composed of bis(ethylenedioxy)tetrathiafulvalene and stearic acid as a soft electrode onto alkanethiol SAMs (C{sub n}-SAM, n = 12, 14, 16, 18) to prepare Au/SAM/metal junctions of relatively large size (∼ 15.6 × 10{sup 3} μm{sup 2}). The current density–voltage (J–V) characteristics across the junctions exhibited rectifying behavior with a ratio R of ∼ 5 (R = |J(V)|/|J(− V)| at ± 1 V). The lower transfer rate corresponding to the electron transport from Au to the LB films exhibited nonlinear J–V characteristics, while the higher transfer rate of electrons from the LB film to Au showed linear J–V characteristics. Kelvin probe force microscopy revealed that the work function of the metallic LB films was smaller than that of Au. The observed rectification behavior is probably caused by different electron transport mechanisms between the two current directions. - Highlights: • Metallic Langmuir–Blodgett (LB) films were used as soft electrodes. • Molecular junctions of metal–alkanethiol–LB films were fabricated. • The current–voltage curve across the junctions exhibited rectifying behavior. • This is the first observation for alkanethiol monolayer junctions. • The work function difference between the electrodes induces the rectification.

Two-dimensional simulations of the superconducting proximity in superconductor-semiconductor junctions

Science.gov (United States)

Chua, Victor; Vissers, Michael; Law, Stephanie A.; Vishveshwara, Smitha; Eckstein, James N.

2015-03-01

We simulate the consequences of the superconducting proximity effect on the DC current response of a semiconductor-superconductor proximity device within the quasiclassical formalism in the diffusively disordered limit. The device is modeled on in-situ fabricated NS junctions of superconducting Nb films on metallic doped InAs films, with electrical terminals placed in an N-S-N T-junction configuration. Due to the non-collinear configuration of this three terminal device, a theoretical model based on coupled two dimensional spectral and distributional Usadel equations was constructed and numerically solved using Finite-Elements methods. In the regime of high junction conductance, our numerical results demonstrate strong temperature and spatial dependencies of the proximity induced modifications to spectral and transport properties. Such characteristics deviate strongly from usual tunnel junction behavior and aspects of this have been observed in prior experiments[arXiv:1402.6055].

An improved fabrication process for Si-detector-compatible JFETs

International Nuclear Information System (INIS)

Piemonte, Claudio; Dalla Betta, Gian-Franco; Boscardin, Maurizio; Gregori, Paolo; Zorzi, Nicola; Ratti, Lodovico

2006-01-01

We report on JFET devices fabricated on high-resistivity silicon with a radiation detector technology. The problems affecting previous versions of these devices have been thoroughly investigated and solved by developing an improved fabrication process, which allows for a sizeable enhancement in the JFET performance. In this paper, the main features of the fabrication technology are presented and selected results from the electrical and noise characterization of transistors are discussed

Realistic-contact-induced enhancement of rectifying in carbon-nanotube/graphene-nanoribbon junctions

International Nuclear Information System (INIS)

Zhang, Xiang-Hua; Li, Xiao-Fei; Wang, Ling-Ling; Xu, Liang; Luo, Kai-Wu

2014-01-01

Carbon-nanotube/graphene-nanoribbon junctions were recently fabricated by the controllable etching of single-walled carbon-nanotubes [Wei et al., Nat. Commun. 4, 1374 (2013)] and their electronic transport properties were studied here. First principles results reveal that the transmission function of the junctions show a heavy dependence on the shape of contacts, but rectifying is an inherent property which is insensitive to the details of contacts. Interestingly, the rectifying ratio is largely enhanced in the junction with a realistic contact and the enhancement is insensitive to the details of contact structures. The stability of rectifying suggests a significant feasibility to manufacture realistic all-carbon rectifiers in nanoelectronics

Fabrication Process Development for Light Deformable Mirrors

Data.gov (United States)

National Aeronautics and Space Administration — The project objective is to develop robust, reproductibble fabrication processes to realize functional deformable membrane mirrors (DM) for a space mission in which...

Conformal coating of amorphous silicon and germanium by high pressure chemical vapor deposition for photovoltaic fabrics

Science.gov (United States)

Ji, Xiaoyu; Cheng, Hiu Yan; Grede, Alex J.; Molina, Alex; Talreja, Disha; Mohney, Suzanne E.; Giebink, Noel C.; Badding, John V.; Gopalan, Venkatraman

2018-04-01

Conformally coating textured, high surface area substrates with high quality semiconductors is challenging. Here, we show that a high pressure chemical vapor deposition process can be employed to conformally coat the individual fibers of several types of flexible fabrics (cotton, carbon, steel) with electronically or optoelectronically active materials. The high pressure (˜30 MPa) significantly increases the deposition rate at low temperatures. As a result, it becomes possible to deposit technologically important hydrogenated amorphous silicon (a-Si:H) from silane by a simple and very practical pyrolysis process without the use of plasma, photochemical, hot-wire, or other forms of activation. By confining gas phase reactions in microscale reactors, we show that the formation of undesired particles is inhibited within the microscale spaces between the individual wires in the fabric structures. Such a conformal coating approach enables the direct fabrication of hydrogenated amorphous silicon-based Schottky junction devices on a stainless steel fabric functioning as a solar fabric.

Temperature behavior of SNS-like Nb/Al-AlO x/Nb Josephson junctions

International Nuclear Information System (INIS)

Lacquaniti, V.; Andreone, D.; Maggi, S.; Rocci, R.; Sosso, A.; Steni, R.

2006-01-01

Overdamped Nb/Al-AlO x /Nb Josephson junctions are an intermediate state between the SIS and SNS Josephson junctions. Stable and reproducible non-hysteretic current-voltage characteristics have been obtained with a proper choice of the fabrication parameters, featuring critical current densities J c up to 25 kA/cm 2 and characteristic voltages up to 450 μV. While these values make the junctions interesting for RSFQ electronic circuits, their response to an RF signal at 70 GHz has demonstrated their suitability for both programmable and ac voltage standard. In these work we analyse the temperature behavior of these junctions up to T/T c = 1, T c being the niobium critical temperature, which gives relevant information on the junction structure and, especially, on the oxide insulator/metallic film barrier, which is the key for the reproducible transition from an hysteretic to a non-hysteretic behavior. The results are also compared with other data of hysteretic and overdamped junctions

Fabrication of ultrashort niobium variable-thickness bridges

International Nuclear Information System (INIS)

Goto, T.

1982-01-01

A simple technique for the fabrication of niobium variable-thickness bridges of length approx.0.1 μm is described. The bridges are found to operate as ideal Josephson junctions over a wide temperature range

A graphene/single GaAs nanowire Schottky junction photovoltaic device.

Science.gov (United States)

Luo, Yanbin; Yan, Xin; Zhang, Jinnan; Li, Bang; Wu, Yao; Lu, Qichao; Jin, Chenxiaoshuai; Zhang, Xia; Ren, Xiaomin

2018-05-04

A graphene/nanowire Schottky junction is a promising structure for low-cost high-performance optoelectronic devices. Here we demonstrate a graphene/single GaAs nanowire Schottky junction photovoltaic device. The Schottky junction is fabricated by covering a single layer graphene onto an n-doped GaAs nanowire. Under 532 nm laser excitation, the device exhibits a high responsivity of 231 mA W-1 and a short response/recover time of 85/118 μs at zero bias. Under AM 1.5 G solar illumination, the device has an open-circuit voltage of 75.0 mV and a short-circuit current density of 425 mA cm-2, yielding a remarkable conversion efficiency of 8.8%. The excellent photovoltaic performance of the device is attributed to the strong built-in electric field in the Schottky junction as well as the transparent property of graphene. The device is promising for self-powered high-speed photodetectors and low-cost high-efficiency solar cells.

Gas selectivity of SILAR grown CdS nano-bulk junction

Science.gov (United States)

Jayakrishnan, R.; Nair, Varun G.; Anand, Akhil M.; Venugopal, Meera

2018-03-01

Nano-particles of cadmium sulphide were deposited on cleaned copper substrate by an automated sequential ionic layer adsorption reaction (SILAR) system. The grown nano-bulk junction exhibits Schottky diode behavior. The response of the nano-bulk junction was investigated under oxygen and hydrogen atmospheric conditions. The gas response ratio was found to be 198% for Oxygen and 34% for Hydrogen at room temperature. An increase in the operating temperature of the nano-bulk junction resulted in a decrease in their gas response ratio. A logarithmic dependence on the oxygen partial pressure to the junction response was observed, indicating a Temkin isothermal behavior. Work function measurements using a Kelvin probe demonstrate that the exposure to an oxygen atmosphere fails to effectively separate the charges due to the built-in electric field at the interface. Based on the benefits like simple structure, ease of fabrication and response ratio the studied device is a promising candidate for gas detection applications.

Enchanced total dose damage in junction field effect transistors and related linear integrated circuits

International Nuclear Information System (INIS)

Flament, O.; Autran, J.L.; Roche, P.; Leray, J.L.; Musseau, O.

1996-01-01

Enhanced total dose damage of Junction Field-effect Transistors (JFETs) due to low dose rate and/or elevated temperature has been investigated for elementary p-channel structures fabricated on bulk and SOI substrates as well as for related linear integrated circuits. All these devices were fabricated with conventional junction isolation (field oxide). Large increases in damage have been revealed by performing high temperature and/or low dose rate irradiations. These results are consistent with previous studies concerning bipolar field oxides under low-field conditions. They suggest that the transport of radiation-induced holes through the oxide is the underlying mechanism. Such an enhanced degradation must be taken into account for low dose rate effects on linear integrated circuits

Process development and fabrication for sphere-pac fuel rods

International Nuclear Information System (INIS)

Welty, R.K.; Campbell, M.H.

1981-06-01

Uranium fuel rods containing sphere-pac fuel have been fabricated for in-reactor tests and demonstrations. A process for the development, qualification, and fabrication of acceptable sphere-pac fuel rods is described. Special equipment to control fuel contamination with moisture or air and the equipment layout needed for rod fabrication is described and tests for assuring the uniformity of the fuel column are discussed. Fuel retainers required for sphere-pac fuel column stability and instrumentation to measure fuel column smear density are described. Results of sphere-pac fuel rod fabrication campaigns are reviewed and recommended improvements for high throughput production are noted

Fabrication of reproducible, integration-compatible hybrid molecular/si electronics.

Science.gov (United States)

Yu, Xi; Lovrinčić, Robert; Kraynis, Olga; Man, Gabriel; Ely, Tal; Zohar, Arava; Toledano, Tal; Cahen, David; Vilan, Ayelet

2014-12-29

Reproducible molecular junctions can be integrated within standard CMOS technology. Metal-molecule-semiconductor junctions are fabricated by direct Si-C binding of hexadecane or methyl-styrene onto oxide-free H-Si(111) surfaces, with the lateral size of the junctions defined by an etched SiO2 well and with evaporated Pb as the top contact. The current density, J, is highly reproducible with a standard deviation in log(J) of 0.2 over a junction diameter change from 3 to 100 μm. Reproducibility over such a large range indicates that transport is truly across the molecules and does not result from artifacts like edge effects or defects in the molecular monolayer. Device fabrication is tested for two n-Si doping levels. With highly doped Si, transport is dominated by tunneling and reveals sharp conductance onsets at room temperature. Using the temperature dependence of current across medium-doped n-Si, the molecular tunneling barrier can be separated from the Si-Schottky one, which is a 0.47 eV, in agreement with the molecular-modified surface dipole and quite different from the bare Si-H junction. This indicates that Pb evaporation does not cause significant chemical changes to the molecules. The ability to manufacture reliable devices constitutes important progress toward possible future hybrid Si-based molecular electronics. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Fabrication and characterization of melt-processed YBCO

International Nuclear Information System (INIS)

Sengupta, S.; Corpus, J.; Gaines, J.R. Jr.; Todt, V.R.; Zhang, X.F.; Miller, D.J.; Varanasi, C.; McGinn, P.J.

1996-01-01

Large domain YBCO are fabricated by using a melt processing technique for magnetic levitation applications. A Nd 1+x Ba 2-x Cu 3 O y seed is used to initiate grain growth and to control the orientation of YBCO grains. Samples as large as 2 inch have been fabricated by utilizing this method. Microstructural studies reveals two distinct regions in these levitators due to different growth mechanism along a/b and c axis. Some initial results on the mass production of these levitators are also reported

Capacitance measurement of Josephson tunnel junctions with microwave-induced dc quasiparticle tunneling currents

International Nuclear Information System (INIS)

Hamasaki, K.; Yoshida, K.; Irie, F.; Enpuku, K.

1982-01-01

The microwave response of the dc quasiparticle tunneling current in Josephson tunnel junctions, where the Josephson current is suppressed by an external magnetic field, has been studied quantitatively in order to clarify its characteristics as a probe for the measurement of the junction capacitance. Extensive experiments for both small and long junctions are carried out for distinguishing between microwave behaviors of lumped and distributed constant junctions. It is shown that the observed voltage dependence of the dc quasiparticle tunneling current modified by an applied rf field is in good agreement with a theoretical result which takes into account the influence of the microwave circuit connected to the junction. The comparison between theory and experiment gives the magnitude of the internal rf field in the junction. Together with the applied rf field, this internal rf field leads to the junction rf impedance which is dominated by the junction capacitance in our experimental condition. In the case of lumped junctions, this experimental rf impedance is in reasonable agreement with the theoretical one with the junction capacitance estimated from the Fiske step of the distributed junction fabricated on the same substrate; the obtained ratio of the experimental impedance to the theoretical one is approximately 0.6--1.7. In the case of distributed junctions, however, experimental values of their characteristic impedances are approximately 0.2--0.3 of theoretical values calculated by assuming the one-dimensional junction model and taking account of the standing-wave effect in the junction

Investigation of room-temperature wafer bonded GaInP/GaAs/InGaAsP triple-junction solar cells

Energy Technology Data Exchange (ETDEWEB)

Yang, Wen-xian; Dai, Pan; Ji, Lian; Tan, Ming; Wu, Yuan-yuan [Key Lab of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences (CAS), Suzhou 215123 (China); Uchida, Shiro [Department of Mechanical Science and Engineering Faculty of Engineering, Chiba Institute of Technology, 2-17-1, Tsudanuma, Narashino, Chiba 275-0016 (Japan); Lu, Shu-long, E-mail: sllu2008@sinano.ac.cn [Key Lab of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences (CAS), Suzhou 215123 (China); Yang, Hui [Key Lab of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences (CAS), Suzhou 215123 (China)

2016-12-15

Highlights: • High quality InGaAsP material with a bandgap of 1.0 eV was grown by MBE. • Room-temperature wafer-bonded GaInP/GaAs/InGaAsP SCs were fabricated. • An efficiency of 30.3% of wafer-bonded triple-junction SCs was obtained. - Abstract: We report on the fabrication of III–V compound semiconductor multi-junction solar cells using the room-temperature wafer bonding technique. GaInP/GaAs dual-junction solar cells on GaAs substrate and InGaAsP single junction solar cell on InP substrate were separately grown by all-solid state molecular beam epitaxy (MBE). The two cells were then bonded to a triple-junction solar cell at room-temperature. A conversion efficiency of 30.3% of GaInP/GaAs/InGaAsP wafer-bonded solar cell was obtained at 1-sun condition under the AM1.5G solar simulator. The result suggests that the room-temperature wafer bonding technique and MBE technique have a great potential to improve the performance of multi-junction solar cell.

Research on plant of metal fuel fabrication using casting process

International Nuclear Information System (INIS)

Senda, Yasuhide; Mori, Yukihide

2003-12-01

This document presents the plant concept of metal fuel fabrication system (38tHM/y) using casting process in electrolytic recycle, which based on recent studies of its equipment design and quality control system. And we estimate the cost of its construction and operation, including costs of maintenance, consumed hardware and management of waste. The content of this work is as follows. (1) Designing of fuel fabrication equipment: We make material flow diagrams of the fuel fabrication plant and rough designs of the injection casting furnace, demolder and inspection equipment. (2) Designing of resolution system of liquid waste, which comes from analytical process facility. Increased analytical items, we rearrange analytical process facility, estimate its chemicals and amount of waste. (3) Arrangement of equipments: We made a arrangement diagram of the metal fuel fabrication equipments in cells. (4) Estimation of cost data: We estimated cost to construct the facility and to operate it. (author)

Millimetre and sub-mm wavelength radiation sources based on discrete Josephson junction arrays

International Nuclear Information System (INIS)

Darula, M.; Beuven, S.; Doderer, T.

1999-01-01

This paper reviews the present status and future perspectives of discrete Josephson junction arrays for applications as sub-mm wavelength radiation sources. It is intended to cover the whole field, i.e. theory, fabrication and experimental results. The theoretical part reviews the fundamental aspects of Josephson junctions for oscillator applications and introduces the different possible array types. The recent results of analytical as well as numerical investigations are discussed. After the description of the fabrication of both low-T c as well as high-T c superconductor Josephson junctions and arrays, methods to investigate the array dynamics experimentally are mentioned. Finally, the recent experimental results are reviewed. This topic is divided into two parts, the first dealing with low-T c arrays, the second with high-T c arrays. The different possibilities to design arrays and to include them in practical applications are discussed and compared, with special emphasis on those experiments where radiation was generated successfully. The article is completed with a discussion of the most important experimental results. (author)

Effect of the critical current density and the junction size on the leakage current of Nb/Al-AlOx/Nb superconducting tunnel junctions for radiation detection

International Nuclear Information System (INIS)

Joosse, K.; Nakagawa, Hiroshi; Akoh, Hiroshi; Takada, Susumu; Maehata, Keisuke; Ishibashi, Kenji.

1996-01-01

Nb/Al-AlO x /Nb superconducting tunnel junctions (STJ's) designed for X-ray detection have been fabricated. The behavior of the low-temperature subgap leakage current, which severely limits the energy resolution obtained in such devices, is investigated. From trends in the dependence of the leakage currents on the critical current density and the size of the STJ, as well as from the low-temperature current-voltage characteristics, and an analysis of the base electrode surface morphology, it is concluded that physical defects in the barrier region are the most probable cause of the leakage currents. Suggestions are given for optimization of the device processing. (author)

Sol-gel process for thermal reactor fuel fabrication

International Nuclear Information System (INIS)

Mukerjee, S.K.

2008-01-01

Full text: Sol-gel processes have revolutionized conventional ceramic technology by providing extremely fine and uniform powders for the fabrication of ceramics. The use of this technology for nuclear fuel fabrication has also been explored in many countries. Unlike the conventional sol-gel process, sol-gel process for nuclear fuels tries to eliminate the preparation of powders in view of the toxic nature of the powders particularly those of plutonium and 233 U. The elimination of powder handling thus makes this process more readily amenable for use in glove boxes or for remote handling. In this process, the first step is the preparation of microspheres of the fuel material from a solution which is then followed by vibro-compaction of these microspheres of different sizes to obtain the required smear density of fuel inside a pin. The maximum achievable packing density of 92 % makes it suitable for fast reactors only. With a view to extend the applicability of sol-gel process for thermal reactor fuel fabrication the concept of converting the gel microspheres derived from sol-gel process, to the pellets, has been under investigation for several years. The unique feature of this process is that it combines the advantages of sol-gel process for the preparation of fuel oxide gel microspheres of reproducible quality with proven irradiation behavior of the pellet fuel. One of the important pre-requisite for the success of this process is the preparation of soft oxide gel microspheres suitable for conversion to dense pellets free from berry structure. Studies on the internal gelation process, one of the many variants of sol-gel process, for obtaining soft oxide gel microspheres suitable for gel pelletisation is now under investigation at BARC. Some of the recent findings related to Sol-Gel Microsphere Pelletisation (SGMP) in urania-plutonia and thoria-urania systems will be presented

In-process fault detection for textile fabric production: onloom imaging

Science.gov (United States)

Neumann, Florian; Holtermann, Timm; Schneider, Dorian; Kulczycki, Ashley; Gries, Thomas; Aach, Til

2011-05-01

Constant and traceable high fabric quality is of high importance both for technical and for high-quality conventional fabrics. Usually, quality inspection is carried out by trained personal, whose detection rate and maximum period of concentration are limited. Low resolution automated fabric inspection machines using texture analysis were developed. Since 2003, systems for the in-process inspection on weaving machines ("onloom") are commercially available. With these defects can be detected, but not measured quantitative precisely. Most systems are also prone to inevitable machine vibrations. Feedback loops for fault prevention are not established. Technology has evolved since 2003: Camera and computer prices dropped, resolutions were enhanced, recording speeds increased. These are the preconditions for real-time processing of high-resolution images. So far, these new technological achievements are not used in textile fabric production. For efficient use, a measurement system must be integrated into the weaving process; new algorithms for defect detection and measurement must be developed. The goal of the joint project is the development of a modern machine vision system for nondestructive onloom fabric inspection. The system consists of a vibration-resistant machine integration, a high-resolution machine vision system, and new, reliable, and robust algorithms with quality database for defect documentation. The system is meant to detect, measure, and classify at least 80 % of economically relevant defects. Concepts for feedback loops into the weaving process will be pointed out.

Junction depth measurement using carrier illumination

International Nuclear Information System (INIS)

Borden, Peter

2001-01-01

Carrier Illumination [trade mark] (CI) is a new method recently developed to meet the need for a non-destructive, high throughput junction depth measurement on patterned wafers. A laser beam creates a quasi-static excess carrier profile in the semiconductor underlying the activated junction. The excess carrier profile is fairly constant below the junction, and drops rapidly in the junction, creating a steep index of refraction gradient at the junction edge. Interference with light reflected from this index gradient provides a signal that is analyzed to determine the junction depth. The paper summarizes evaluation of performance in full NMOS and PMOS process flows, on both bare and patterned wafers. The aims have been to validate (1) performance in the presence of underlying layers typically found at the source/drain (S/D) process steps and (2) measurement on patterned wafers. Correlation of CI measurements to SIMS and transistor drive current are shown. The data were obtained from NMOS structures using As S/D and LDD implants. Correlations to SRP, SIMS and sheet resistance are shown for PMOS structures using B 11 LDD implants. Gage capability measurements are also presented

Piezo-tunnel effect in Al/Al2O3/Al junctions elaborated by atomic layer deposition

Science.gov (United States)

Rafael, R.; Puyoo, E.; Malhaire, C.

2017-11-01

In this work, the electrical transport in Al/Al2O3/Al junctions under mechanical stress is investigated in the perspective to use them as strain sensors. The metal/insulator/metal junctions are elaborated with a low temperature process (≤200 °C) fully compatible with CMOS back-end-of-line. The conduction mechanism in the structure is found to be Fowler-Nordheim tunneling, and efforts are made to extract the relevant physical parameters. Gauge factors up to -32.5 were found in the fabricated devices under tensile stress. Finally, theoretical mechanical considerations give strong evidence that strain sensitivity in Al/Al2O3/Al structures originates not only from geometrical deformations but also from the variation of interface barrier height and/or effective electronic mass in the tunneling oxide layer.

Inverted process for graphene integrated circuits fabrication.

Science.gov (United States)

Lv, Hongming; Wu, Huaqiang; Liu, Jinbiao; Huang, Can; Li, Junfeng; Yu, Jiahan; Niu, Jiebin; Xu, Qiuxia; Yu, Zhiping; Qian, He

2014-06-07

CMOS compatible 200 mm two-layer-routing technology is employed to fabricate graphene field-effect transistors (GFETs) and monolithic graphene ICs. The process is inverse to traditional Si technology. Passive elements are fabricated in the first metal layer and GFETs are formed with buried gate/source/drain in the second metal layer. Gate dielectric of 3.1 nm in equivalent oxide thickness (EOT) is employed. 500 nm-gate-length GFETs feature a yield of 80% and fT/fmax = 17 GHz/15.2 GHz RF performance. A high-performance monolithic graphene frequency multiplier is demonstrated using the proposed process. Functionality was demonstrated up to 8 GHz input and 16 GHz output. The frequency multiplier features a 3 dB bandwidth of 4 GHz and conversion gain of -26 dB.

Ultra Shallow Arsenic Junctions in Germanium Formed by Millisecond Laser Annealing

DEFF Research Database (Denmark)

Hellings, G.; Rosseel, E.; Simoen, E.

2011-01-01

Millisecond laser annealing is used to fabricate ultra shallow arsenic junctions in preamorphized and crystalline germanium, with peak temperatures up to 900 degrees C. At this temperature, As indiffusion is observed while yielding an electrically active concentration up to 5.0 x 10(19) cm(-3......) for a junction depth of 31 nm. Ge preamorphization and the consecutive solid phase epitaxial regrowth are shown to result in less diffusion and increased electrical activation. The recrystallization of the amorphized Ge layer during laser annealing is studied using transmission electron microscopy...

Spectroscopy of transmission resonances through a C₆₀ junction

DEFF Research Database (Denmark)

Schneider, N. L.; Néel, N.; Andersen, Nick Papior

2015-01-01

Electron transport through a single C60 molecule on Cu(1 1 1) has been investigated with a scanning tunnelling microscope in tunnelling and contact ranges. Single-C60 junctions have been fabricated by establishing a contact between the molecule and the tip, which is reflected by a down......-shift in the lowest unoccupied molecular orbital resonance. These junctions are stable even at elevated bias voltages enabling conductance measurements at high voltages and nonlinear conductance spectroscopy in tunnelling and contact ranges. Spectroscopy and first principles transport calculations clarify...

Fabrication of Mg-X-O (X = Fe, Co, Ni, Cr, Mn, Ti, V, and Zn) barriers for magnetic tunnel junctions

Science.gov (United States)

Yakushiji, K.; Kitagawa, E.; Ochiai, T.; Kubota, H.; Shimomura, N.; Ito, J.; Yoda, H.; Yuasa, S.

2018-05-01

We fabricated magnetic tunnel junctions with a 3d-transition material(X)-doped MgO (Mg-X-O) barrier, and evaluated the effect of the doping on magnetoresistance (MR) and microstructure. Among the variations of X (X = Fe, Co, Ni, Cr, Mn, Ti, V, and Zn), X = Fe and Mn showed a high MR ratio of more than 100%, even at a low resistance-area product of 3 Ωμm2. The microstructure analysis revealed that (001) textured orientation formed for X = Fe and Mn despite substantial doping (about 10 at%). The elemental mappings indicated that Fe atoms in the Mg-Fe-O barrier were segregated at the interfaces, while Mn atoms were evenly involved in the Mg-Mn-O barrier. This suggests that MgO has high adaptability for Fe and Mn dopants in terms of high MR ratio.

Fundamental characterization of the effect of nitride sidewall spacer process on boron dose loss in ultra-shallow junction formation

Energy Technology Data Exchange (ETDEWEB)

Kohli, P. [Silicon Technology Development, Texas Instruments, Dallas, TX 75243 (United States) and Microelectronics Research Center, University of Texas, Austin, TX 78758 (United States)]. E-mail: puneet.kohli@sematech.org; Chakravarthi, S. [Silicon Technology Development, Texas Instruments, Dallas, TX 75243 (United States); Jain, Amitabh [Silicon Technology Development, Texas Instruments, Dallas, TX 75243 (United States); Bu, H. [Silicon Technology Development, Texas Instruments, Dallas, TX 75243 (United States); Mehrotra, M. [Silicon Technology Development, Texas Instruments, Dallas, TX 75243 (United States); Dunham, S.T. [Department of Electrical Engineering, University of Washington, Seattle, WA 98195 (United States); Banerjee, S.K. [Microelectronics Research Center, University of Texas, Austin, TX 78758 (United States)

2004-12-15

A nitride spacer with an underlying deposited tetraethoxysilane (TEOS) oxide that behaves as a convenient etch stop layer is a popular choice for sidewall spacer in modern complementary metal oxide semiconductor (CMOS) process flows. In this work, we have investigated the effect of the silicon nitride spacer process chemistry on the boron profile in silicon and the related dose loss of B from Si into silicon dioxide. This is reflected as a dramatic change in the junction depth, junction abruptness and junction peak concentration for the different nitride chemistries. We conclude that the silicon nitride influences the concentration of hydrogen in the silicon dioxide and different nitride chemistries result in different concentrations of hydrogen in the silicon dioxide during the final source/drain anneal. The presence of H enhances the diffusivity of B in the silicon dioxide and thereby results in a significant dose loss from the Si into the silicon dioxide. In this work, we show that this dose loss can be minimized and the junction profile engineered by choosing a desirable nitride chemistry.

Micro and nano fabrication tools and processes

CERN Document Server

Gatzen, Hans H; Leuthold, Jürg

2015-01-01

For Microelectromechanical Systems (MEMS) and Nanoelectromechanical Systems (NEMS) production, each product requires a unique process technology. This book provides a comprehensive insight into the tools necessary for fabricating MEMS/NEMS and the process technologies applied. Besides, it describes enabling technologies which are necessary for a successful production, i.e., wafer planarization and bonding, as well as contamination control.

A full description of a simple and scalable fabrication process for electrowetting displays

International Nuclear Information System (INIS)

Zhou, K; Heikenfeld, J; Dean, K A; Howard, E M; Johnson, M R

2009-01-01

Electrowetting displays provide a high white state reflectance of >50% and have attracted substantial world-wide interest, yet are primarily an industrially led effort with few details on preferred materials and fabrication processes. Reported herein is the first complete description of the electrowetting display fabrication process. The description includes materials selection, purification and all fabrication steps from substrate selection to sealing. Challenging materials and fabrication processes include dielectric optimization, fluoropolymer selection, hydrophilic grid patterning, liquid dosing, dye purification and liquid ionic content. The process described herein has produced pixel arrays that were switched at 2 . The majority of fabrication processes can conform to liquid-crystal style manufacturing equipment, and therefore can be readily adopted by many display practitioners. Also presented are additional tips and techniques, such as controlling the onset of oil film break-up in an electrowetting display. This paper should enable anyone skilled in displays or microfabrication to quickly and successfully set up research and fabrication of electrowetting displays

Geometric dependence of Nb-Bi2Te3-Nb topological Josephson junction transport parameters

International Nuclear Information System (INIS)

Molenaar, C G; Leusink, D P; Brinkman, A; Wang, X L

2014-01-01

Superconductor-topological insulator–superconductor Josephson junctions have been fabricated in order to study the width dependence of the critical current, normal state resistance and flux periodicity of the critical current modulation in an external field. Previous literature reports suggest anomalous scaling in topological junctions due to the presence of Majorana bound states. However, for most realized devices, one would expect that trivial 2π-periodic Andreev levels dominate transport. We also observe anomalous scaling behaviour of junction parameters, but the scaling can be well explained by mere geometric effects, such as the parallel bulk conductivity shunt and flux focusing. (paper)

Modeling and Implementation of HfO2-based Ferroelectric Tunnel Junctions

Science.gov (United States)

Pringle, Spencer Allen

HfO2-based ferroelectric tunnel junctions (FTJs) represent a unique opportunity as both a next-generation digital non-volatile memory and as synapse devices in braininspired logic systems, owing to their higher reliability compared to filamentary resistive random-access memory (ReRAM) and higher speed and lower power consumption compared to competing devices, including phase-change memory (PCM) and state-of-the-art FTJ. Ferroelectrics are often easier to deposit and have simpler material structure than films for magnetic tunnel junctions (MTJs). Ferroelectric HfO2 also enables complementary metal-oxide-semiconductor (CMOS) compatibility, since lead zirconate titanate (PZT) and BaTiO3-based FTJs often are not. No other groups have yet demonstrated a HfO2-based FTJ (to best of the author's knowledge) or applied it to a suitable system. For such devices to be useful, system designers require models based on both theoretical physical analysis and experimental results of fabricated devices in order to confidently design control systems. Both the CMOS circuitry and FTJs must then be designed in layout and fabricated on the same die. This work includes modeling of proposed device structures using a custom python script, which calculates theoretical potential barrier heights as a function of material properties and corresponding current densities (ranging from 8x103 to 3x10-2 A/cm 2 with RHRS/RLRS ranging from 5x105 to 6, depending on ferroelectric thickness). These equations were then combined with polynomial fits of experimental timing data and implemented in a Verilog-A behavioral analog model in Cadence Virtuoso. The author proposes tristate CMOS control systems, and circuits, for implementation of FTJ devices as digital memory and presents simulated performance. Finally, a process flow for fabrication of FTJ devices with CMOS is presented. This work has therefore enabled the fabrication of FTJ devices at RIT and the continued investigation of them as applied to any

Fabrication of long REBCO coated conductors by PLD process in China

Energy Technology Data Exchange (ETDEWEB)

Li, Yijie, E-mail: yjli@sjtu.edu.cn [Key Laboratory of Artificial Structure and Quantum Control, Ministry of Education, Department of Physics and Astronomy, Shanghai Jiao Tong University, 800 Dong Chuan Road, Shanghai 20040 (China); Shanghai Superconductor Technology Corporation, Ltd, 28 Jiang Chuan Road, Shanghai 200240 (China); Liu, Linfei; Wu, Xiang [Key Laboratory of Artificial Structure and Quantum Control, Ministry of Education, Department of Physics and Astronomy, Shanghai Jiao Tong University, 800 Dong Chuan Road, Shanghai 20040 (China)

2015-11-15

Highlights: • SJTU fabricated 100 m long class CC tapes with over 300 A/cm on RABiTS tapes in 2011. • 100 m long CC tapes with 500 A/cm have been routinely fabricated on IBAD-MgO tapes. • The process optimization for kilometer long coated conductor tapes is underway. - Abstract: In China, the First National Key Project on CC Program started in 2009, which was focused on developing hundred meter long class CC tapes based on PLD/RABiTS processes. In this project, SJTU mainly worked on all of functional layer deposition process development. Northwest Institute for Non-ferrous Metal Research worked on RABiTS tape fabrication. At the end of the project in 2011, SJTU successfully fabricated hundred meter long CC tapes with over 300 A/cm (at 77 K, self field) on RABiTS tapes. To develop high performance CC tapes by PLD/IBAD-MgO processes, a pilot CC fabrication line was set up at Shanghai Superconductor Technology Corporation, Ltd. in 2013. High quality long REBCO coated conductors have been successfully fabricated on flexible polycrystalline metal tapes by PLD plus magnetron sputter and IBAD processes. Under optimized conditions, the IBAD-MgO layers showed pure (0 0 1) orientation and excellent in-plane texture. The in-plane phi-scan rocking curve is 4–6 degrees. AFM observation showed MgO layer had very smooth surface. The RMS is less 1 nm. On the textured MgO layer, sputter deposited single cerium oxide cap-layer showed pure (0 0 1) orientation and excellent in-plane texture of 4–6 degree. Reel-to-reel PLD process with high deposition rate was already scaled up to 100 m/h tape speed. Hundred meters long coated conductor tapes with over 500 A/cm performance have been routinely fabricated. And now, the process optimization for kilometer long coated conductor tapes is underway.

On-chip photonic system using suspended p-n junction InGaN/GaN multiple quantum wells device and multiple waveguides

International Nuclear Information System (INIS)

Wang, Yongjin; Zhu, Guixia; Gao, Xumin; Yang, Yongchao; Yuan, Jialei; Shi, Zheng; Zhu, Hongbo; Cai, Wei

2016-01-01

We propose, fabricate, and characterize the on-chip integration of suspended p-n junction InGaN/GaN multiple quantum wells (MQWs) device and multiple waveguides on the same GaN-on-silicon platform. The integrated devices are fabricated via a wafer-level process and exhibit selectable functionalities for diverse applications. As the suspended p-n junction InGaN/GaN MQWs device operates under a light emitting diode (LED) mode, part of the light emission is confined and guided by the suspended waveguides. The in-plane propagation along the suspended waveguides is measured by a micro-transmittance setup. The on-chip data transmission is demonstrated for the proof-of-concept photonic integration. As the suspended p-n junction InGaN/GaN MQWs device operates under photodiode mode, the light is illuminated on the suspended waveguides with the aid of the micro-transmittance setup and, thus, coupled into the suspended waveguides. The guided light is finally sensed by the photodiode, and the induced photocurrent trace shows a distinct on/off switching performance. These experimental results indicate that the on-chip photonic integration is promising for the development of sophisticated integrated photonic circuits in the visible wavelength region.

Time effectiveness of capillary effect improvement of ramie fabrics processed by RF glow discharging

International Nuclear Information System (INIS)

Wang Zhiwen; Wei Weixing; He Yanhe; Zhao Yuanqing; Pan Liyiji; Li Xuemei; Shi Shaodui; Li Guangxin

2010-01-01

The time effectiveness of capillary effect improvement of ramie fabrics processed by RF glow discharging was studied. The ramie fabrics were processed in fulfilling with different gas (O 2 , N 2 , Ar) by different parameters (such as pressure,power and time) plasma. The capillary effect of the ramie fabrics processed by RF glow discharging was tested at different time. The results indicate that the capillary effect of ramie fabrics processed by RF glow discharging has been improved, the improvement of the capillary effect firstly decrease rapidly, then slowly, and become stable after 15 day, it indicate that improvement of the ramie fabrics capillary has good time effectiveness, and the plasma parameter for the best capillary effect improvement of ramie fabric is 100 W and 40 Pa processed 20 min by oxygen plasma. (authors)

Modeling Radiation Effects on a Triple Junction Solar Cell using Silvaco ATLAS

OpenAIRE

Schiavo, Daniel

2012-01-01

In this research, Silvaco ATLAS, an advanced virtual wafer fabrication tool, was used to model the effects of radiation on a triple junction InGaP/GaAs/Ge solar cell. A Silvaco ATLAS model of a triple junction InGaP/GaAs/Ge cell was created by first creating individual models for solar cells composed of each material. Realistic doping levels were used and thicknesses were varied to produce the design parameters and create reasonably efficient solar cell models for testing. After the individua...

Top contact organic field effect transistors fabricated using a photolithographic process

International Nuclear Information System (INIS)

Wang Hong; Peng Ying-Quan; Ji Zhuo-Yu; Shang Li-Wei; Liu Xing-Hua; Liu Ming

2011-01-01

This paper proposes an effective method of fabricating top contact organic field effect transistors by using a photolithographic process. The semiconductor layer is protected by a passivation layer. Through photolithographic and etching processes, parts of the passivation layer are etched off to form source/drain electrode patterns. Combined with conventional evaporation and lift-off techniques, organic field effect transistors with a top contact are fabricated successfully, whose properties are comparable to those prepared with the shadow mask method and one order of magnitude higher than the bottom contact devices fabricated by using a photolithographic process. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Resistive switching of Cu/Cu2O junction fabricated using simple thermal oxidation at 423 K for memristor application

Science.gov (United States)

Ani, M. H.; Helmi, F.; Herman, S. H.; Noh, S.

2018-01-01

Recently, extensive researches have been done on memristor to replace current memory storage technologies. Study on active layer of memristor mostly involving n-type semiconductor oxide such as TiO2 and ZnO. This paper highlight a simple water vapour oxidation method at 423 K to form Cu/Cu2O electronic junction as a new type of memristor. Cu2O is a p-type semiconductor oxide, was used as the active layer of memristor. Cu/Cu2O/Au memristor was fabricated by thermal oxidation of copper foil, followed by sputtering of gold. Structural, morphological and memristive properties were characterized using XRD, FESEM, and current-voltage, I-V measurement respectively. Its memristivity was indentified by pinch hysteresis loop and measurement of high resistance state (HRS) and low resistance state (LRS) of the sample. The Cu/Cu2O/Au memristor demonstrates comparable performances to previous studies using other methods.

Self-Assembly Assisted Fabrication of Dextran-Based Nanohydrogels with Reduction-Cleavable Junctions for Applications as Efficient Drug Delivery Systems

Science.gov (United States)

Wang, Hao; Dai, Tingting; Zhou, Shuyan; Huang, Xiaoxiao; Li, Songying; Sun, Kang; Zhou, Guangdong; Dou, Hongjing

2017-01-01

In order to overcome the key challenge in improving both fabrication efficiency and their drug delivery capability of anti-cancer drug delivery systems (ACDDS), here polyacrylic acid (PAA) grafted dextran (Dex) nanohydrogels (NGs) with covalent crosslinked structure bearing redox sensitive disulfide crosslinking junctions (Dex-SS-PAA) were synthesized efficiently through a one-step self-assembly assisted methodology (SAA). The Dex-SS-PAA were subsequently conjugated with doxorubicin through an acid-labile hydrazone bond (Dex-SS-PAA-DOX). The in vitro drug release behavior, anti-cancer effects in vivo, and biosafety of the as-prepared acid- and redox-dual responsive biodegradable NGs were systematically investigated. The results revealed that the Dex-SS-PAA-DOX exhibited pH- and redox-controlled drug release, greatly reduced the toxicity of free DOX, while exhibiting a strong ability to inhibit the growth of MDA-MB-231 tumors. Our study demonstrated that the Dex-SS-PAA-DOX NGs are very promising candidates as ACDDS for anti-cancer therapeutics.

STIM proteins and the endoplasmic reticulum-plasma membrane junctions.

Science.gov (United States)

Carrasco, Silvia; Meyer, Tobias

2011-01-01

Eukaryotic organelles can interact with each other through stable junctions where the two membranes are kept in close apposition. The junction that connects the endoplasmic reticulum to the plasma membrane (ER-PM junction) is unique in providing a direct communication link between the ER and the PM. In a recently discovered signaling process, STIM (stromal-interacting molecule) proteins sense a drop in ER Ca(2+) levels and directly activate Orai PM Ca(2+) channels across the junction space. In an inverse process, a voltage-gated PM Ca(2+) channel can directly open ER ryanodine-receptor Ca(2+) channels in striated-muscle cells. Although ER-PM junctions were first described 50 years ago, their broad importance in Ca(2+) signaling, as well as in the regulation of cholesterol and phosphatidylinositol lipid transfer, has only recently been realized. Here, we discuss research from different fields to provide a broad perspective on the structures and unique roles of ER-PM junctions in controlling signaling and metabolic processes.

Practical silicon Light emitting devices fabricated by standard IC technology

International Nuclear Information System (INIS)

Aharoni, H.; Monuko du Plessis; Snyman, L.W.

2004-01-01

Full Text:Research activities are described with regard to the development of a comprehensive approach for the practical realization of single crystal Silicon Light Emitting Devices (Si-LEDs). Several interesting suggestions for the fabrication of such devices were made in the literature but they were not adopted by the semiconductor industry because they involve non-standard fabrication schemes, requiring special production lines. Our work presents an alternative approach, proposed and realized in practice by us, permitting the fabrication of Si-LEDs using the standard conventional fully industrialized IC technology ''as is'' without any adaptation. It enables their fabrication in the same production lines of the presently existing IC industry. This means that Si-LEDs can now be fabricated simultaneously with other components, such as transistors, on the same silicon chip, using the same masks and processing procedures. The result is that the yield, reliability, and price of the above Si-LEDs are the same as the other Si devices integrated on the same chip. In this work some structural details of several practical Si-LED's designed by us, as well as experimental results describing their performance are presented. These Si-LED's were fabricated to our specifications utilizing standard CMOS/BiCMOS technology, a fact which comprises an achievement by itself. The structure of the Si-LED's, is designed according to specifications such as the required operating voltage, overall light output intensity, its dependence(linear, or non-linear) on the input signal (voltage or current), light generations location (bulk, or near-surface), the emission pattern and uniformity. Such structural design present a problem since the designer can not use any structural parameters (such as doping levels and junction depths for example) but only those which already exist in the production lines. Since the fabrication procedures in these lines are originally designed for processing of

Hybrid tunnel junction contacts to III–nitride light-emitting diodes

KAUST Repository

Young, Erin C.; Yonkee, Benjamin P.; Wu, Feng; Oh, Sang Ho; DenBaars, Steven P.; Nakamura, Shuji; Speck, James S.

2016-01-01

In this work, we demonstrate highly doped GaN p–n tunnel junction (TJ) contacts on III–nitride heterostructures where the active region of the device and the top p-GaN layers were grown by metal organic chemical vapor deposition and highly doped n-GaN was grown by NH3 molecular beam epitaxy to form the TJ. The regrowth interface in these hybrid devices was found to have a high concentration of oxygen, which likely enhanced tunneling through the diode. For optimized regrowth, the best tunnel junction device had a total differential resistivity of 1.5 × 10−4 Ω cm2, including contact resistance. As a demonstration, a blue-light-emitting diode on a ($20\\bar{2}\\bar{1}$) GaN substrate with a hybrid tunnel junction and an n-GaN current spreading layer was fabricated and compared with a reference sample with a transparent conducting oxide (TCO) layer. The tunnel junction LED showed a lower forward operating voltage and a higher efficiency at a low current density than the TCO LED.

Hybrid tunnel junction contacts to III–nitride light-emitting diodes

KAUST Repository

Young, Erin C.

2016-01-26

In this work, we demonstrate highly doped GaN p–n tunnel junction (TJ) contacts on III–nitride heterostructures where the active region of the device and the top p-GaN layers were grown by metal organic chemical vapor deposition and highly doped n-GaN was grown by NH3 molecular beam epitaxy to form the TJ. The regrowth interface in these hybrid devices was found to have a high concentration of oxygen, which likely enhanced tunneling through the diode. For optimized regrowth, the best tunnel junction device had a total differential resistivity of 1.5 × 10−4 Ω cm2, including contact resistance. As a demonstration, a blue-light-emitting diode on a ($20\\\\bar{2}\\\\bar{1}$) GaN substrate with a hybrid tunnel junction and an n-GaN current spreading layer was fabricated and compared with a reference sample with a transparent conducting oxide (TCO) layer. The tunnel junction LED showed a lower forward operating voltage and a higher efficiency at a low current density than the TCO LED.

Performance enhancement of Ge-on-Insulator tunneling FETs with source junctions formed by low-energy BF2 ion implantation

Science.gov (United States)

Katoh, Takumi; Matsumura, Ryo; Takaguchi, Ryotaro; Takenaka, Mitsuru; Takagi, Shinichi

2018-04-01

To clarify the process of formation of source regions of high-performance Ge n-channel tunneling field-effect transistors (TFETs), p+-n junctions formed by low-energy ion implantation (I/I) of BF2 atoms are characterized. Here, the formation of p+-n junctions with steep B profiles and low junction leakage is a key issue. The steepness of 5.7 nm/dec in profiles of B implanted into Ge is obtained for BF2 I/I at 3 keV with a dose of 4 × 1014 cm-2. Ge-on-insulator (GOI) n-TFETs with the source tunnel junctions formed by low-energy B and BF2 I/I are fabricated on GOI substrates and the device operation is confirmed. Although the performance at room temperature is significantly degraded by the source junction leakage current, an I on/I off ratio of 105 and the minimum sub-threshold swing (S.S.) of 130 mV/dec are obtained at 10 K. It is found that GOI n-TFETs with steeper B profiles formed by BF2 I/I have led to higher on current and a lower sub-threshold slope, demonstrating the effectiveness of steep B profiles in enhancing the GOI TFET performance.

Spatial inhomogeneity in Schottky barrier height at graphene/MoS2 Schottky junctions

Science.gov (United States)

Tomer, D.; Rajput, S.; Li, L.

2017-04-01

Transport properties of graphene semiconductor Schottky junctions strongly depend on interfacial inhomogeneities due to the inherent formation of ripples and ridges. Here, chemical vapor deposited graphene is transferred onto multilayer MoS2 to fabricate Schottky junctions. These junctions exhibit rectifying current-voltage behavior with the zero bias Schottky barrier height increases and ideality factor decreases with increasing temperature between 210 and 300 K. Such behavior is attributed to the inhomogeneous interface that arises from graphene ripples and ridges, as revealed by atomic force and scanning tunneling microscopy imaging. Assuming a Gaussian distribution of the barrier height, a mean value of 0.96  ±  0.14 eV is obtained. These findings indicate a direct correlation between temperature dependent Schottky barrier height and spatial inhomogeneity in graphene/2D semiconductor Schottky junctions.

Spatial inhomogeneity in Schottky barrier height at graphene/MoS2 Schottky junctions

International Nuclear Information System (INIS)

Tomer, D; Rajput, S; Li, L

2017-01-01

Transport properties of graphene semiconductor Schottky junctions strongly depend on interfacial inhomogeneities due to the inherent formation of ripples and ridges. Here, chemical vapor deposited graphene is transferred onto multilayer MoS 2 to fabricate Schottky junctions. These junctions exhibit rectifying current–voltage behavior with the zero bias Schottky barrier height increases and ideality factor decreases with increasing temperature between 210 and 300 K. Such behavior is attributed to the inhomogeneous interface that arises from graphene ripples and ridges, as revealed by atomic force and scanning tunneling microscopy imaging. Assuming a Gaussian distribution of the barrier height, a mean value of 0.96  ±  0.14 eV is obtained. These findings indicate a direct correlation between temperature dependent Schottky barrier height and spatial inhomogeneity in graphene/2D semiconductor Schottky junctions. (paper)

High-performance germanium n+/p junction by nickel-induced dopant activation of implanted phosphorus at low temperature

International Nuclear Information System (INIS)

Huang Wei; Lu Chao; Yu Jue; Wei Jiang-Bin; Chen Chao-Wen; Wang Jian-Yuan; Xu Jian-Fang; Li Cheng; Chen Song-Yan; Lai Hong-Kai; Wang Chen; Liu Chun-Li

2016-01-01

High-performance Ge n + /p junctions were fabricated at a low formation temperature from 325 °C to 400 °C with a metal(nickel)-induced dopant activation technique. The obtained NiGe electroded Ge n + /p junction has a rectification ratio of 5.6× 10 4 and a forward current of 387 A/cm 2 at −1 V bias. The Ni-based metal-induced dopant activation technique is expected to meet the requirement of the shallow junction of Ge MOSFET. (paper)

Integrated porous-silicon light-emitting diodes: A fabrication process using graded doping profiles

International Nuclear Information System (INIS)

Barillaro, G.; Diligenti, A.; Pieri, F.; Fuso, F.; Allegrini, M.

2001-01-01

A fabrication process, compatible with an industrial bipolar+complementary metal - oxide - semiconductor (MOS)+diffusion MOS technology, has been developed for the fabrication of efficient porous-silicon-based light-emitting diodes. The electrical contact is fabricated with a double n + /p doping, achieving a high current injection efficiency and thus lower biasing voltages. The anodization is performed as the last step of the process, thus reducing potential incompatibilities with industrial processes. The fabricated devices show yellow-orange electroluminescence, visible with the naked eye in room lighting. A spectral characterization of light emission is presented and briefly discussed. [copyright] 2001 American Institute of Physics

Parametric interactions in high-Tc superconducting step edge junctions at X-band. [Y-Ba-Cu-O

Energy Technology Data Exchange (ETDEWEB)

Kain, A.Z. (TRW Space and Tech. Group, Redondo Beach, CA (United States)); Fetterman, H.R. (Electrical Engineering Dept., Univ. of California at Los Angeles (United States))

1993-04-20

We have fabricated and tested both single junctions and series arrays of YBCO step edge junctions for four photon parametric effects at X band as a first step in developing a parametric amplifier at 60 GHz. The series array of 25 junctions at 10.3 Ghz shows a 10 dB increase in reflected signal power as the pump power is increased, while the single junction at 12.2 GHz indicates a 2 dB change. The reflected power at the characteristic idler frequency of 2[omega][sub p]-[omega][sub s] is evidence of true Josephson junction parametric interaction. We are currently investigating the use of thallium based films at 60 GHz which offer a broader range of operating temperatures than does YBCO. Our design for a parametric amplifier at V band is a combination of microstrip based series arrays of junctions and an antipodal finline transition. (orig.)

Conductance enhancement due to interface magnons in electron-beam evaporated MgO magnetic tunnel junctions with CoFeB free layer deposited at different pressure

Energy Technology Data Exchange (ETDEWEB)

Guo, P.; Yu, G. Q.; Wei, H. X.; Han, X. F., E-mail: jiafengfeng@aphy.iphy.ac.cn, E-mail: xfhan@aphy.iphy.ac.cn [Beijing National Laboratory of Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Li, D. L.; Feng, J. F., E-mail: jiafengfeng@aphy.iphy.ac.cn, E-mail: xfhan@aphy.iphy.ac.cn [Beijing National Laboratory of Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); CRANN and School of Physics, Trinity College, Dublin 2 (Ireland); Kurt, H. [CRANN and School of Physics, Trinity College, Dublin 2 (Ireland); Department of Engineering Physics, Istanbul Medeniyet University, 34720 Istanbul (Turkey); Chen, J. Y.; Coey, J. M. D. [CRANN and School of Physics, Trinity College, Dublin 2 (Ireland)

2014-10-21

Electron-beam evaporated MgO-based magnetic tunnel junctions have been fabricated with the CoFeB free layer deposited at Ar pressure from 1 to 4 mTorr, and their tunneling process has been studied as a function of temperature and bias voltage. By changing the growth pressure, the junction dynamic conductance dI/dV, inelastic electron tunneling spectrum d²I/dV², and tunneling magnetoresistance vary with temperature. Moreover, the low-energy magnon cutoff energy E_{{sub C} derived from the conductance versus temperature curve agrees with interface magnon energy obtained directly from the inelastic electron tunneling spectrum, which demonstrates that interface magnons are involved in the electron tunneling process, opening an additional conductance channel and thus enhancing the total conductance.}

Inorganic photovoltaic devices fabricated using nanocrystal spray deposition.

Science.gov (United States)

Foos, Edward E; Yoon, Woojun; Lumb, Matthew P; Tischler, Joseph G; Townsend, Troy K

2013-09-25

Soluble inorganic nanocrystals offer a potential route to the fabrication of all-inorganic devices using solution deposition techniques. Spray processing offers several advantages over the more common spin- and dip-coating procedures, including reduced material loss during fabrication, higher sample throughput, and deposition over a larger area. The primary difference observed, however, is an overall increase in the film roughness. In an attempt to quantify the impact of this morphology change on the devices, we compare the overall performance of spray-deposited versus spin-coated CdTe-based Schottky junction solar cells and model their dark current-voltage characteristics. Spray deposition of the active layer results in a power conversion efficiency of 2.3 ± 0.3% with a fill factor of 45.7 ± 3.4%, Voc of 0.39 ± 0.06 V, and Jsc of 13.3 ± 3.0 mA/cm(2) under one sun illumination.

Performance Analysis of Si-Based Ultra-Shallow Junction Photodiodes for UV Radiation Detection

NARCIS (Netherlands)

Shi, L.

2013-01-01

This thesis presents a performance investigation of newly-developed ultra-shallow junction photodiodes (PureB-diodes) for ultraviolet (UV) radiation detection. The photodiodes are fabricated by pure boron chemical vapor deposition (PureB CVD) technology, which can provide nanometer-thin boron

A simple cost-effective and eco-friendly wet chemical process for the fabrication of superhydrophobic cotton fabrics

International Nuclear Information System (INIS)

Richard, Edna; Lakshmi, R.V.; Aruna, S.T.; Basu, Bharathibai J.

2013-01-01

Superhydrophobic surfaces were created on hydrophilic cotton fabrics by a simple wet chemical process. The fabric was immersed in a colloidal suspension of zinc hydroxide followed by subsequent hydrophobization with stearic acid. The wettability of the modified cotton fabric sample was studied by water contact angle (WCA) and water shedding angle (WSA) measurements. The modified cotton fabrics exhibited superhydrophobicity with a WCA of 151° for 8 μL water droplet and a WSA of 5–10° for 40 μL water droplet. The superhydrophobic cotton sample was also characterized by field emission scanning electron microscopy (FESEM) and energy dispersive X-ray spectroscopy (EDX). The method is simple, eco-friendly and cost-effective and can be applied to large area of cotton fabric materials. It was shown that superhydrophobicity of the fabric was due to the combined effect of surface roughness imparted by zinc hydroxide and the low surface energy of stearic acid.

A simple cost-effective and eco-friendly wet chemical process for the fabrication of superhydrophobic cotton fabrics

Energy Technology Data Exchange (ETDEWEB)

Richard, Edna; Lakshmi, R.V.; Aruna, S.T., E-mail: aruna_reddy@nal.res.in; Basu, Bharathibai J.

2013-07-15

Superhydrophobic surfaces were created on hydrophilic cotton fabrics by a simple wet chemical process. The fabric was immersed in a colloidal suspension of zinc hydroxide followed by subsequent hydrophobization with stearic acid. The wettability of the modified cotton fabric sample was studied by water contact angle (WCA) and water shedding angle (WSA) measurements. The modified cotton fabrics exhibited superhydrophobicity with a WCA of 151° for 8 μL water droplet and a WSA of 5–10° for 40 μL water droplet. The superhydrophobic cotton sample was also characterized by field emission scanning electron microscopy (FESEM) and energy dispersive X-ray spectroscopy (EDX). The method is simple, eco-friendly and cost-effective and can be applied to large area of cotton fabric materials. It was shown that superhydrophobicity of the fabric was due to the combined effect of surface roughness imparted by zinc hydroxide and the low surface energy of stearic acid.

Terahertz Mixing Characteristics of NbN Superconducting Tunnel Junctions and Related Astronomical Observations

Science.gov (United States)

Li, J.

2010-01-01

High-sensitivity superconducting SIS (superconductor-insulator-superconductor) mixers are playing an increasingly important role in the terahertz (THz) astronomical observation, which is an emerging research frontier in modern astrophysics. Superconducting SIS mixers with niobium (Nb) tunnel junctions have reached a sensitivity close to the quantum limit, but have a frequency limit about 0.7 THz (i.e., gap frequency of Nb tunnel junctions). Beyond this frequency Nb superconducting films will absorb energetic photons (i.e., energy loss) to break Cooper pairs, thereby resulting in significant degradation of the mixer performance. Therefore, it is of particular interest to develop THz superconducting SIS mixers incorporating tunnel junctions with a larger energy gap. Niobium-nitride (NbN) superconducting tunnel junctions have been long known for their large energy gap, almost double that of Nb ones. With the introduction of epitaxially grown NbN films, the fabrication technology of NbN superconducting tunnel junctions has been considerably improved in the recent years. Nevertheless, their performances are still not as good as Nb ones, and furthermore they are not yet demonstrated in real astronomical applications. Given the facts mentioned above, in this paper we systematically study the quantum mixing behaviors of NbN superconducting tunnel junctions in the THz regime and demonstrate an astronomical testing observation with a 0.5 THz superconducting SIS mixer developed with NbN tunnel junctions. The main results of this study include: (1) successful design and fabrication of a 0.4˜0.6 THz waveguide mixing circuit with the high-dielectric-constant MgO substrate; (2) successful fabrication of NbN superconducting tunnel junctions with the gap voltage reaching 5.6 mV and the quality factor as high as 15; (3) demonstration of a 0.5 THz waveguide NbN superconducting SIS mixer with a measured receiver noise temperature (no correction) as low as five times the quantum limit

Insulator-protected mechanically controlled break junctions for measuring single-molecule conductance in aqueous environments

OpenAIRE

Muthusubramanian, N.; Galan, E.; Maity, C.; Eelkema, R.; Grozema, F.C.; van der Zant, H.S.J.

2016-01-01

We present a method to fabricate insulated gold mechanically controlled break junctions (MCBJ) by coating the metal with a thin layer of aluminum oxide using plasma enhanced atomic layer deposition. The Al2O3 thickness deposited on the MCBJ devices was varied from 2 to 15 nm to test the suppression of leakage currents in deionized water and phosphate buffered saline. Junctions coated with a 15 nm thick oxide layer yielded atomically sharp electrodes and negligible conductance counts in the ra...

Superconductor-semiconductor-superconductor planar junctions of aluminium on DELTA-doped gallium arsenide

DEFF Research Database (Denmark)

Taboryski, Rafael Jozef; Clausen, Thomas; Kutchinsky, jonatan

1997-01-01

We have fabricated and characterized planar superconductor-semiconductor-superconductor (S-Sm-S) junctions with a high quality (i.e. low barrier) interface between an n++ modulation doped conduction layer in MBE grown GaAs and in situ deposited Al electrodes. The Schottky barrier at the S...

Recovering probabilities for nucleotide trimming processes for T cell receptor TRA and TRG V-J junctions analyzed with IMGT tools

Directory of Open Access Journals (Sweden)

Lefranc Marie-Paule

2008-10-01

Full Text Available Abstract Background Nucleotides are trimmed from the ends of variable (V, diversity (D and joining (J genes during immunoglobulin (IG and T cell receptor (TR rearrangements in B cells and T cells of the immune system. This trimming is followed by addition of nucleotides at random, forming the N regions (N for nucleotides of the V-J and V-D-J junctions. These processes are crucial for creating diversity in the immune response since the number of trimmed nucleotides and the number of added nucleotides vary in each B or T cell. IMGT® sequence analysis tools, IMGT/V-QUEST and IMGT/JunctionAnalysis, are able to provide detailed and accurate analysis of the final observed junction nucleotide sequences (tool "output". However, as trimmed nucleotides can potentially be replaced by identical N region nucleotides during the process, the observed "output" represents a biased estimate of the "true trimming process." Results A probabilistic approach based on an analysis of the standardized tool "output" is proposed to infer the probability distribution of the "true trimmming process" and to provide plausible biological hypotheses explaining this process. We collated a benchmark dataset of TR alpha (TRA and TR gamma (TRG V-J rearranged sequences and junctions analysed with IMGT/V-QUEST and IMGT/JunctionAnalysis, the nucleotide sequence analysis tools from IMGT®, the international ImMunoGeneTics information system®, http://imgt.cines.fr. The standardized description of the tool output is based on the IMGT-ONTOLOGY axioms and concepts. We propose a simple first-order model that attempts to transform the observed "output" probability distribution into an estimate closer to the "true trimming process" probability distribution. We use this estimate to test the hypothesis that Poisson processes are involved in trimming. This hypothesis was not rejected at standard confidence levels for three of the four trimming processes: TRAV, TRAJ and TRGV. Conclusion By

Recovering probabilities for nucleotide trimming processes for T cell receptor TRA and TRG V-J junctions analyzed with IMGT tools.

Science.gov (United States)

Bleakley, Kevin; Lefranc, Marie-Paule; Biau, Gérard

2008-10-02

Nucleotides are trimmed from the ends of variable (V), diversity (D) and joining (J) genes during immunoglobulin (IG) and T cell receptor (TR) rearrangements in B cells and T cells of the immune system. This trimming is followed by addition of nucleotides at random, forming the N regions (N for nucleotides) of the V-J and V-D-J junctions. These processes are crucial for creating diversity in the immune response since the number of trimmed nucleotides and the number of added nucleotides vary in each B or T cell. IMGT sequence analysis tools, IMGT/V-QUEST and IMGT/JunctionAnalysis, are able to provide detailed and accurate analysis of the final observed junction nucleotide sequences (tool "output"). However, as trimmed nucleotides can potentially be replaced by identical N region nucleotides during the process, the observed "output" represents a biased estimate of the "true trimming process." A probabilistic approach based on an analysis of the standardized tool "output" is proposed to infer the probability distribution of the "true trimmming process" and to provide plausible biological hypotheses explaining this process. We collated a benchmark dataset of TR alpha (TRA) and TR gamma (TRG) V-J rearranged sequences and junctions analysed with IMGT/V-QUEST and IMGT/JunctionAnalysis, the nucleotide sequence analysis tools from IMGT, the international ImMunoGeneTics information system, http://imgt.cines.fr. The standardized description of the tool output is based on the IMGT-ONTOLOGY axioms and concepts. We propose a simple first-order model that attempts to transform the observed "output" probability distribution into an estimate closer to the "true trimming process" probability distribution. We use this estimate to test the hypothesis that Poisson processes are involved in trimming. This hypothesis was not rejected at standard confidence levels for three of the four trimming processes: TRAV, TRAJ and TRGV. By using trimming of rearranged TR genes as a benchmark, we

Charge Transport Processes in Molecular Junctions

Science.gov (United States)

Smith, Christopher Eugene

Molecular electronics (ME) has evolved into a rich area of exploration that combines the fields of chemistry, materials, electronic engineering and computational modeling to explore the physics behind electronic conduction at the molecular level. Through studying charge transport properties of single molecules and nanoscale molecular materials the field has gained the potential to bring about new avenues for the miniaturization of electrical components where quantum phenomena are utilized to achieve solid state molecular device functionality. Molecular junctions are platforms that enable these studies and consist of a single molecule or a small group of molecules directly connected to electrodes. The work presented in this thesis has built upon the current understanding of the mechanisms of charge transport in ordered junctions using self-assembled monolayer (SAM) molecular thin films. Donor and acceptor compounds were synthesized and incorporated into SAMs grown on metal substrates then the transport properties were measured with conducting probe atomic force microscopy (CP-AFM). In addition to experimentally measured current-voltage (I-V) curves, the transport properties were addressed computationally and modeled theoretically. The key objectives of this project were to 1) investigate the impact of molecular structure on hole and electron charge transport, 2) understand the nature of the charge carriers and their structure-transport properties through long (chemically gated to modulate the transport. These results help advance our understanding of transport behavior in semiconducting molecular thin films, and open opportunities to engineer improved electronic functionality into molecular devices.

Efficient p-n junction-based thermoelectric generator that can operate at extreme temperature conditions

Science.gov (United States)

Chavez, Ruben; Angst, Sebastian; Hall, Joseph; Maculewicz, Franziska; Stoetzel, Julia; Wiggers, Hartmut; Thanh Hung, Le; Van Nong, Ngo; Pryds, Nini; Span, Gerhard; Wolf, Dietrich E.; Schmechel, Roland; Schierning, Gabi

2018-01-01

In many industrial processes, a large proportion of energy is lost in the form of heat. Thermoelectric generators can convert this waste heat into electricity by means of the Seebeck effect. However, the use of thermoelectric generators in practical applications on an industrial scale is limited in part because electrical, thermal, and mechanical bonding contacts between the semiconductor materials and the metal electrodes in current designs are not capable of withstanding thermal-mechanical stress and alloying of the metal-semiconductor interface when exposed to the high temperatures occurring in many real-world applications. Here we demonstrate a concept for thermoelectric generators that can address this issue by replacing the metallization and electrode bonding on the hot side of the device by a p-n junction between the two semiconductor materials, making the device robust against temperature induced failure. In our proof-of-principle demonstration, a p-n junction device made from nanocrystalline silicon is at least comparable in its efficiency and power output to conventional devices of the same material and fabrication process, but with the advantage of sustaining high hot side temperatures and oxidative atmosphere.

Investigation on shortening fabrication process of instrumented irradiation capsule of JMTR

International Nuclear Information System (INIS)

Nagata, Hiroshi; Inoue, Shuichi; Yamaura, Takayuki; Tsuchiya, Kunihiko; Nagao, Yoshiharu

2013-06-01

Refurbishment of The Japan Materials Testing Reactor (JMTR) was completed in FY2010. For damage caused by the 2011 off the Pacific coast of Tohoku Earthquake, the repair of facilities was completed in October 2012. Currently, the JMTR is in preparation for restart. Irradiation tests for LWRs safety research, science and technologies and production of RI for medical diagnosis medicine, etc. are expected after the JMTR restart. On the other hand, aiming at the attractive irradiation testing reactor, the usability improvement has been discussed. As a part of the usability improvement, shortening of turnaround time to get irradiation results from an application for irradiation use was discussed focusing on the fabrication process of irradiation capsules, where the fabrication process was analyzed and reviewed by referring a trial fabrication of the mockup capsule. As a result, it was found that the turnaround time can be shortened 2 months from fabrication period of 6 months with communize of irradiation capsule parts, application of ready-made instrumentation including the sheath heater, reconsideration of inspection process, etc. (author)

Planar intrinsic Josephson junctions with in-plane aligned YBCO films

CERN Document Server

Zhang, L; Kobayashi, T; Goto, T; Mukaida, M

2002-01-01

Planar type devices were fabricated by patterning in-plane aligned YBa sub 2 Cu sub 3 O sub 7 sub - subdelta (YBCO) films. The current-voltage characteristics along the c-axis at various temperatures and oxygen contents were measured. The current voltage curves showing supercurrent and hysteresis were obtained for the samples annealed at an oxygen pressure of 1.3 x 10 sup 4 Pa, while the supercurrent and hysteresis became smaller and even disappeared as the oxygen pressure decreased. The relationships between the critical currents and temperatures are similar to those of d-wave superconducting tunnel junctions. These results indicate the formation of stacks of intrinsic Josephson junctions, which are useful for developing high-frequency electron devices.

Planar intrinsic Josephson junctions with in-plane aligned YBCO films

International Nuclear Information System (INIS)

Zhang, L; Moriya, M; Kobayashi, T; Goto, T; Mukaida, M

2002-01-01

Planar type devices were fabricated by patterning in-plane aligned YBa 2 Cu 3 O 7-δ (YBCO) films. The current-voltage characteristics along the c-axis at various temperatures and oxygen contents were measured. The current voltage curves showing supercurrent and hysteresis were obtained for the samples annealed at an oxygen pressure of 1.3 x 10 4 Pa, while the supercurrent and hysteresis became smaller and even disappeared as the oxygen pressure decreased. The relationships between the critical currents and temperatures are similar to those of d-wave superconducting tunnel junctions. These results indicate the formation of stacks of intrinsic Josephson junctions, which are useful for developing high-frequency electron devices

Homo-junction ferroelectric field-effect-transistor memory device using solution-processed lithium-doped zinc oxide thin films

KAUST Repository

Nayak, Pradipta K.; Caraveo-Frescas, J. A.; Bhansali, Unnat. S.; Alshareef, Husam N.

2012-01-01

High performance homo-junction field-effect transistor memory devices were prepared using solution processed transparent lithium-doped zinc oxide thin films for both the ferroelectric and semiconducting active layers. A highest field-effect mobility

Silicon Nano fabrication by Atomic Force Microscopy-Based Mechanical Processing

International Nuclear Information System (INIS)

Miyake, Sh.; Wang, M.; Kim, J.

2014-01-01

This paper reviews silicon nano fabrication processes using atomic force microscopy (AFM). In particular, it summarizes recent results obtained in our research group regarding AFM-based silicon nano fabrication through mechanochemical local oxidation by diamond tip sliding, as well as mechanical, electrical, and electromechanical processing using an electrically conductive diamond tip. Microscopic three-dimensional manufacturing mainly relies on etching, deposition, and lithography. Therefore, a special emphasis was placed on nano mechanical processes, mechanochemical reaction by potassium hydroxide solution etching, and mechanical and electrical approaches. Several important surface characterization techniques consisting of scanning tunneling microscopy and related techniques, such as scanning probe microscopy and AFM, were also discussed.

Rapsodie first core manufacture. 1. part: processing plant; Fabrication du premier coeur de rapsodie. Premiere partie: l'atelier de fabrication

Energy Technology Data Exchange (ETDEWEB)

Masselot, Y; Bataller, S; Ganivet, M; Guillet, H; Robillard, A; Stosskopf, F [Commissariat a l' Energie Atomique, Cadarache (France). Centre d' Etudes Nucleaires

1968-07-01

This report is the first in a series of three describing the processes, results and peculiar technical problems related to the manufacture of the first core of the fast reactor Rapsodie. A detailed study of manufacturing processes(pellets, pins, fissile sub-assemblies), the associated testings (raw materials, processed pellets and pins, sub-assemblies before delivery), manufacturing facilities and improvements for a second campaign are described. (author) [French] Ce rapport est le premier d'une serie de trois qui decrivent les procedes, les resultats et les problemes techniques particuliers de la fabrication du du premier coeur de la pile a neutrons rapides Rapsodie. Il comporte une etude detaillee des procedes de fabrication (pastilles, aiguilles, assemblages combustibles) et des methodes de controle associees (matieres premieres, pastilles et aiguilles en cours de fabrication, assemblages fissiles avant livraison), ainsi qu'une decription complete des installations de l'atelier de fabrication et les modifications apportees pour une deuxieme campagne. (auteur)

Thermal stability analysis of thin film Ni-NiOx-Cr tunnel junctions

International Nuclear Information System (INIS)

Krishnan, S.; Emirov, Y.; Bhansali, S.; Stefanakos, E.; Goswami, Y.

2010-01-01

This research reports on the thermal stability of Ni-NiO x -Cr based Metal-Insulator-Metal (MIM) junction. Effect of annealing (250 to 400 o C) on the electrical and physical transport properties of this MIM stack was understood to determine the thermal budget allowable when using these diodes. MIM tunnel junctions were fabricated by sputtering and the NiO x was formed through reactive sputtering. The performance of the tunnel junctions after exposure to elevated temperatures was investigated using current-voltage measurements. This was correlated to the structural properties of the interfaces at different temperatures, characterized by Atomic Force Microscopy, X-ray Diffraction and Transmission Electron Microscopy (TEM). MIM tunnel junctions annealed up to 350 o C demonstrated satisfactory current-voltage characteristics and sensitivity. MIM junctions exhibited improved electrical performance as they were heated to 250 o C (sensitivity of 42 V -1 and a zero-bias resistance of ∼300 Ω) due to improved crystallization of the layers within the stack. At temperatures over 350 o C, TEM and Energy Dispersive Spectra confirmed a breakdown of the MIM structure due to interdiffusion.

Development of a Multi-User Polyimide-MEMS Fabrication Process and its Application to MicroHotplates

KAUST Repository

Lizardo, Ernesto B.

2013-05-08

Micro-electro-mechanical systems (MEMS) became possible thanks to the silicon based technology used to fabricate integrated circuits. Originally, MEMS fabrication was limited to silicon based techniques and materials, but the expansion of MEMS applications brought the need of a wider catalog of materials, including polymers, now being used to fabricate MEMS. Polyimide is a very attractive polymer for MEMS fabrication due to its high temperature stability compared to other polymers, low coefficient of thermal expansion, low film stress and low cost. The goal of this thesis is to expand the Polyimide usage as structural material for MEMS by the development of a multi-user fabrication process for the integration of this polymer along with multiple metal layers on a silicon substrate. The process also integrates amorphous silicon as sacrificial layer to create free-standing structures. Dry etching is used to release the devices and avoid stiction phenomena. The developed process is used to fabricate platforms for micro-hotplate gas sensors. The fabrication steps for the platforms are described in detail, explaining the process specifics and capabilities. An initial testing of the micro-hotplate is presented. As the process was also used as educational tool, some designs made by students and fabricated with the Polyimide-MEMS process are also presented.

Two-dimensional dopant profiling for shallow junctions by TEM and AFM

International Nuclear Information System (INIS)

Yoo, K.

2000-01-01

The present work concerns the development of the Etch/TEM and Etch/AFM methods to obtain quantitative 2-D dopant profiles for the ultra shallow p-n junctions of the next generation of metal-oxide-semiconductor field effect transistors (MOSFETs). For these methods, thin foil (TEM) or bulk (AFM) cross-sectional specimens were etched using a dopant selective chemical so that local areas of the dopant implanted source/drain (S/D) regions were etched to different depths. The surface topography of the S/D regions was determined from the thickness fringes for the TEM method and by the direct measurement for the AFM method. The local etched depths were converted to etch rates, and these were then converted to corresponding 1-D and 2-D dopant profiles by the experimentally independent etch rate calibration curves. Shallow junction MOSFET samples were designed and fabricated with junction depths 60nm (n + /p), 80nm (n + /p) and 120nm (p + /n) using 0.25μm process technology. A new method using SOG (Spin-on-Glass) contributed to the high quality XTEM thin foil specimens. Controlled stirring of the etchant increased the dopant concentration selectivity and etching consistency. Computer modelling simulated the isotropic etching behaviours, which can introduce the significant error in dopant profiling for shallow and abrupt junction samples. Comprehensive quantitative results enabled the optimum etching time to be determined for the first time. Etch/TEM method gave 1-D dopant profiles that showed good agreement with 1-D Spreading Resistance Probe (SRP) dopant profiles for determining junction depths. 2-D dopant profiles gave L eff , i.e. the shortest lateral distance between the S/D junctions, of major importance for MOSFET performance. Values for L eff of 161, 159 and 123nm were determined from 60, 80 and 120nm junction depth samples respectively, compared with the 215nm MOSFET gate length. The resolution and accuracy of the Etch/TEM method are estimated as 2 and 10nm

NbN Josephson and Tunnel Junctions for Space THz Observation and Signal Processing

National Research Council Canada - National Science Library

Setzu, Romano; Hadacek, Nicolas; Larrey, Vincent; Beaudin, Gerard; Villegier, Jean-Claude

2005-01-01

... (superconductor-normal metal-superconductor) self-shunted junctions are preferred. We present the advantages of the nitride junction technology currently developed at CEA-Grenoble, based on high-performance MTS...

Homo-junction ferroelectric field-effect-transistor memory device using solution-processed lithium-doped zinc oxide thin films

Science.gov (United States)

Nayak, Pradipta K.; Caraveo-Frescas, J. A.; Bhansali, Unnat. S.; Alshareef, H. N.

2012-06-01

High performance homo-junction field-effect transistor memory devices were prepared using solution processed transparent lithium-doped zinc oxide thin films for both the ferroelectric and semiconducting active layers. A highest field-effect mobility of 8.7 cm2/Vs was obtained along with an Ion/Ioff ratio of 106. The ferroelectric thin film transistors showed a low sub-threshold swing value of 0.19 V/dec and a significantly reduced device operating voltage (±4 V) compared to the reported hetero-junction ferroelectric transistors, which is very promising for low-power non-volatile memory applications.

Homo-junction ferroelectric field-effect-transistor memory device using solution-processed lithium-doped zinc oxide thin films

KAUST Repository

Nayak, Pradipta K.

2012-06-22

High performance homo-junction field-effect transistor memory devices were prepared using solution processed transparent lithium-doped zinc oxide thin films for both the ferroelectric and semiconducting active layers. A highest field-effect mobility of 8.7 cm2/Vs was obtained along with an Ion/Ioff ratio of 106. The ferroelectric thin filmtransistors showed a low sub-threshold swing value of 0.19 V/dec and a significantly reduced device operating voltage (±4 V) compared to the reported hetero-junction ferroelectrictransistors, which is very promising for low-power non-volatile memory applications.

Screen printing of a capacitive cantilever-based motion sensor on fabric using a novel sacrificial layer process for smart fabric applications

Science.gov (United States)

Wei, Yang; Torah, Russel; Yang, Kai; Beeby, Steve; Tudor, John

2013-07-01

Free-standing cantilevers have been fabricated by screen printing sacrificial and structural layers onto a standard polyester cotton fabric. By printing additional conductive layers, a complete capacitive motion sensor on fabric using only screen printing has been fabricated. This type of free-standing structure cannot currently be fabricated using conventional fabric manufacturing processes. In addition, compared to conventional smart fabric fabrication processes (e.g. weaving and knitting), screen printing offers the advantages of geometric design flexibility and the ability to simultaneously print multiple devices of the same or different designs. Furthermore, a range of active inks exists from the printed electronics industry which can potentially be applied to create many types of smart fabric. Four cantilevers with different lengths have been printed on fabric using a five-layer structure with a sacrificial material underneath the cantilever. The sacrificial layer is subsequently removed at 160 °C for 30 min to achieve a freestanding cantilever above the fabric. Two silver electrodes, one on top of the cantilever and the other on top of the fabric, are used to capacitively detect the movement of the cantilever. In this way, an entirely printed motion sensor is produced on a standard fabric. The motion sensor was initially tested on an electromechanical shaker rig at a low frequency range to examine the linearity and the sensitivity of each design. Then, these sensors were individually attached to a moving human forearm to evaluate more representative results. A commercial accelerometer (Microstrain G-link) was mounted alongside for comparison. The printed sensors have a similar motion response to the commercial accelerometer, demonstrating the potential of a printed smart fabric motion sensor for use in intelligent clothing applications.

Low-temperature ballistic transport in nanoscale epitaxial graphene cross junctions

OpenAIRE

Weingart, S.; Bock, C.; Kunze, U.; Speck, F.; Seyller, Th.; Ley, L.

2009-01-01

We report on the observation of inertial-ballistic transport in nanoscale cross junctions fabricated from epitaxial graphene grown on SiC(0001). Ballistic transport is indicated by a negative bend resistance of R12,43 ~ 170 ohm which is measured in a non-local, four-terminal configuration at 4.2 K and which vanishes as the temperature is increased above 80 K.

Zurek–Kibble Symmetry Breaking Process in Superconducting Rings; Spontaneous Fluxon Formation in Annular Josephson Tunnel Junctions

DEFF Research Database (Denmark)

Aarøe, Morten; Monaco, Roberto; Dmitriev, P

2007-01-01

We report on new investigations of spontaneous symmetry breaking in non-adiabatic phase transitions. This Zurek-Kibble (ZK) process is mimicked in solid state systems by trapping of magnetic flux quanta, fluxons, in a long annular Josephson tunnel junction quenched through the normal-superconducting...

Tuning the thickness of electrochemically grafted layers in large area molecular junctions

Energy Technology Data Exchange (ETDEWEB)

Fluteau, T.; Bessis, C.; Barraud, C., E-mail: clement.barraud@univ-paris-diderot.fr; Della Rocca, M. L.; Lafarge, P. [Université Paris Diderot, Sorbonne Paris Cité, MPQ, UMR 7162, CNRS, 75205 Paris Cedex 13 (France); Martin, P.; Lacroix, J.-C. [Université Paris Diderot, Sorbonne Paris Cité, ITODYS, UMR 7086, CNRS, 15 rue J.-A. de Baïf, 75205 Paris Cedex 13 (France)

2014-09-21

We have investigated the thickness, the surface roughness, and the transport properties of oligo(1-(2-bisthienyl)benzene) (BTB) thin films grafted on evaporated Au electrodes, thanks to a diazonium-based electro-reduction process. The thickness of the organic film is tuned by varying the number of electrochemical cycles during the growth process. Atomic force microscopy measurements reveal the evolution of the thickness in the range of 2–27 nm. Its variation displays a linear dependence with the number of cycles followed by a saturation attributed to the insulating behavior of the organic films. Both ultrathin (2 nm) and thin (12 and 27 nm) large area BTB-based junctions have then been fabricated using standard CMOS processes and finally electrically characterized. The electronic responses are fully consistent with a tunneling barrier in case of ultrathin BTB film whereas a pronounced rectifying behavior is reported for thicker molecular films.

Reverse degradation of nickel graphene junction by hydrogen annealing

Directory of Open Access Journals (Sweden)

Zhenjun Zhang

2016-02-01

Full Text Available Metal contacts are fundamental building components for graphene based electronic devices and their properties are greatly influenced by interface quality during device fabrication, leading to resistance variation. Here we show that nickel graphene junction degrades after air exposure, due to interfacial oxidation, thus creating a tunneling barrier. Most importantly, we demonstrate that hydrogen annealing at moderate temperature (300 0C is an effective technique to reverse the degradation.

Effect of junction configurations on microdroplet formation in a T-junction microchannel

Science.gov (United States)

Lih, F. L.; Miao, J. M.

2015-03-01

This study investigates the dynamic formation process of water microdroplets in a silicon oil flow in a T-junction microchannel. Segmented water microdroplets are formed at the junction when the water flow is perpendicularly injected into the silicon oil flow in a straight rectangular microchannel. This study further presents the effects of the water flow inlet geometry on hydrodynamic characteristics of water microdroplet formation. A numerical multiphase volume of fluid (VOF) scheme is coupled to solve the unsteady three-dimensional laminar Navier-Stokes equations to depict the droplet formation phenomena at the junction. Predicted results on the length and generated frequency of the microdroplets agree well with experimental results in a T-junction microchannel with straight and flat inlets (the base model) for both fluid flows. Empirical correlations are reported between the volumetric flow ratio and the dimensionless microdroplet length or dimensionless frequency of droplet generation at a fixed capillary number of 4.7 · 10-3. The results of this study indicate a reduction in the droplet length of approximately 21% if the straight inlet for the water flow is modified to a downstream sudden contraction inlet for the water flow.

Screen printing of a capacitive cantilever-based motion sensor on fabric using a novel sacrificial layer process for smart fabric applications

International Nuclear Information System (INIS)

Wei, Yang; Torah, Russel; Yang, Kai; Beeby, Steve; Tudor, John

2013-01-01

Free-standing cantilevers have been fabricated by screen printing sacrificial and structural layers onto a standard polyester cotton fabric. By printing additional conductive layers, a complete capacitive motion sensor on fabric using only screen printing has been fabricated. This type of free-standing structure cannot currently be fabricated using conventional fabric manufacturing processes. In addition, compared to conventional smart fabric fabrication processes (e.g. weaving and knitting), screen printing offers the advantages of geometric design flexibility and the ability to simultaneously print multiple devices of the same or different designs. Furthermore, a range of active inks exists from the printed electronics industry which can potentially be applied to create many types of smart fabric. Four cantilevers with different lengths have been printed on fabric using a five-layer structure with a sacrificial material underneath the cantilever. The sacrificial layer is subsequently removed at 160 °C for 30 min to achieve a freestanding cantilever above the fabric. Two silver electrodes, one on top of the cantilever and the other on top of the fabric, are used to capacitively detect the movement of the cantilever. In this way, an entirely printed motion sensor is produced on a standard fabric. The motion sensor was initially tested on an electromechanical shaker rig at a low frequency range to examine the linearity and the sensitivity of each design. Then, these sensors were individually attached to a moving human forearm to evaluate more representative results. A commercial accelerometer (Microstrain G-link) was mounted alongside for comparison. The printed sensors have a similar motion response to the commercial accelerometer, demonstrating the potential of a printed smart fabric motion sensor for use in intelligent clothing applications. (paper)

A novel fabrication process for out-of-plane microneedle sheets of biocompatible polymer

Science.gov (United States)

Han, Manhee; Hyun, Dong-Hun; Park, Hyoun-Hyang; Lee, Seung S.; Kim, Chang-Hyeon; Kim, Changgyou

2007-06-01

This paper presents a novel process for fabricating out-of-plane microneedle sheets of biocompatible polymer using in-plane microneedles. This process comprises four steps: (1) fabrication of in-plane microneedles using inclined UV lithography and electroforming, (2) conversion of the in-plane microneedles to an out-of-plane microneedle array, (3) fabrication of a negative PDMS mold and (4) fabrication of out-of-plane microneedle sheets of biocompatible polymer by hot embossing. The in-plane microneedles are fabricated with a sharp tip for low insertion forces and are made long to ensure sufficient penetration depth. The in-plane microneedles are converted into an out-of-plane microneedle array to increase the needle density. The negative mold is fabricated for mass-production using a polymer molding technique. The final out-of-plane microneedle sheets are produced using polycarbonate for biocompatibility by employing the hot embossing process. The height of the fabricated needles ranges from 500 to 1500 µm, and the distance between the needles is 500 to 2000 µm. The radii of curvature are approximately 2 µm, while the tip angles are in the range of 39-56°. Most of the geometrical characteristics of the out-of-plane microneedles can be freely controlled for real life applications such as drug delivery, cosmetic delivery and mesotherapy. Since it is also possible to mass-produce the microneedles, this novel process holds sufficient potential for applications in industrial fields.

IMPROVING KNITTED FABRICS BY A STATISTICAL CONTROL OF DIMENSIONAL CHANGES AFTER THE DYEING PROCESS

Directory of Open Access Journals (Sweden)

LLINARES-BERENGUER Jorge

2017-05-01

Full Text Available One of the most important problems that cotton knitted fabrics present during the manufacturing process is their dimensional instability, which needs to be minimised. Some of the variables that intervene in fabric shrinkage are related with its structural characteristics, use of fiber when producing yarn, the yarn count used or the dyeing process employed. Conducted under real factory conditions, the present study attempted to model the behaviour of a fabric structure after a dyeing process by contributing several algorithms that calculate dyed fabric stability after the first wash cycle. Small-diameter circular machines are used to produce garments with no side seams. This is the reason why a list of machines that produce the same fabrics for different widths needs to be made available to produce all the sizes of a given garment. Two relaxation states were distingued for interlock fabric: dyed and dry relaxation, and dyed and wash relaxation. The linear density of the yarn employed to produce sample fabric was combed cotton Ne 30. The machines used for optic bleaching were Overflow. To obtain knitting structures with optimum dimensional stability, different statistical tools were used to help us to evaluate all the production process variables (raw material, machines and process responsible for this variation. This allowed to guarantee product quality without creating costs and losses.

Fabrication and characterization of 8.87 THz schottky barrier mixer diodes for mixer

Science.gov (United States)

Wang, Wenjie; Li, Qian; An, Ning; Tong, Xiaodong; Zeng, Jianping

2018-04-01

In this paper we report on the fabrication and characterization of GaAs-based THz schottky barrier mixer diodes. Considering the analyzed results as well as fabrication cost and complexity, a group of trade-off parameters was determined. Electron-beam lithography and air-bridge technique have been used to obtain schottky diodes with a cut off frequency of 8.87 THz. Equivalent values of series resistance, ideal factor and junction capacitance of 10.2 (1) Ω, 1.14 (0.03) and 1.76(0.03) respectively have been measured for 0.7um diameter anode devices by DC and RF measurements. The schottky barrier diodes fabrication process is fully planar and very suitable for integration in THz frequency multiplier and mixer circuits. THz Schottky barrier diodes based on such technology with 2 μm diameter anodes have been tested at 1.6 THz in a sub-harmonic mixer.

Spatial inhomogeneous barrier heights at graphene/semiconductor Schottky junctions

Science.gov (United States)

Tomer, Dushyant

Graphene, a semimetal with linear energy dispersion, forms Schottky junction when interfaced with a semiconductor. This dissertation presents temperature dependent current-voltage and scanning tunneling microscopy/spectroscopy (STM/S) measurements performed on graphene Schottky junctions formed with both three and two dimensional semiconductors. To fabricate Schottky junctions, we transfer chemical vapor deposited monolayer graphene onto Si- and C-face SiC, Si, GaAs and MoS2 semiconducting substrates using polymer assisted chemical method. We observe three main type of intrinsic spatial inhomogeneities, graphene ripples, ridges and semiconductor steps in STM imaging that can exist at graphene/semiconductor junctions. Tunneling spectroscopy measurements reveal fluctuations in graphene Dirac point position, which is directly related to the Schottky barrier height. We find a direct correlation of Dirac point variation with the topographic undulations of graphene ripples at the graphene/SiC junction. However, no such correlation is established at graphene/Si and Graphene/GaAs junctions and Dirac point variations are attributed to surface states and trapped charges at the interface. In addition to graphene ripples and ridges, we also observe atomic scale moire patterns at graphene/MoS2 junction due to van der Waals interaction at the interface. Periodic topographic modulations due to moire pattern do not lead to local variation in graphene Dirac point, indicating that moire pattern does not contribute to fluctuations in electronic properties of the heterojunction. We perform temperature dependent current-voltage measurements to investigate the impact of topographic inhomogeneities on electrical properties of the Schottky junctions. We observe temperature dependence in junction parameters, such as Schottky barrier height and ideality factor, for all types of Schottky junctions in forward bias measurements. Standard thermionic emission theory which assumes a perfect

Adsorbed states of chlorophenol on Cu(110) and controlled switching of single-molecule junctions

Energy Technology Data Exchange (ETDEWEB)

Okuyama, H., E-mail: hokuyama@kuchem.kyoto-u.ac.jp; Kitaguchi, Y.; Hattori, T.; Ueda, Y.; Ferrer, N. G.; Hatta, S.; Aruga, T. [Department of Chemistry, Graduate School of Science, Kyoto University, Kyoto 606-8502 (Japan)

2016-06-28

A molecular junction of substituted benzene (chlorophenol) is fabricated and controlled by using a scanning tunneling microscope (STM). Prior to the junction formation, the bonding geometry of the molecule on the surface is characterized by STM and electron energy loss spectroscopy (EELS). EELS shows that the OH group of chlorophenol is dissociated on Cu(110) and that the molecule is bonded nearly flat to the surface via an O atom, with the Cl group intact. We demonstrate controlled contact of an STM tip to the “available” Cl group and lift-up of the molecule while it is anchored to the surface via an O atom. The asymmetric bonding motifs of the molecule to the electrodes allow for reversible control of the junction.

A new planetary structure fabrication process using phosphoric acid

Science.gov (United States)

Buchner, Christoph; Pawelke, Roland H.; Schlauf, Thomas; Reissner, Alexander; Makaya, Advenit

2018-02-01

Minimising the launch mass is an important aspect of exploration mission planning. In-situ resource utilisation (ISRU) can improve this by reducing the amount of terrestrial materials needed for planetary exploration activities. We report on a recently concluded investigation into the requirements and available technologies for creating hardware on extra-terrestrial bodies, using the limited resources available on site. A trade-off of ISRU technologies for hardware manufacturing was conducted. A new additive manufacturing process suitable for fabricating structures on the Moon or Mars was developed. The process uses planetary regolith as the base material and concentrated phosphoric acid as the liquid binder. Mixing the reagents creates a sticky construction paste that slowly solidifies into a hard, rock-like material. Prior to solidification, the paste is extruded in layers, creating the desired structures in a 3D printing process. We used Martian regolith simulant JSC-Mars-1A, but the process is not selective towards regolith composition. Samples were exposed to thermal cycles and were mechanically characterised. Reduced-scale demonstrator structures were printed to demonstrate structure fabrication using the developed process.

Fabrication Of Atomic-scale Gold Junctions By Electrochemical Plating Technique Using A Common Medical Disinfectant

Science.gov (United States)

Umeno, Akinori; Hirakawa, Kazuhiko

2005-06-01

Iodine tincture, a medical liquid familiar as a disinfectant, was introduced as an etching/deposition electrolyte for the fabrication of nanometer-separated gold electrodes. In the gold dissolved iodine tincture, the gold electrodes were grown or eroded slowly in atomic scale, enough to form quantum point contacts. The resistance evolution during the electrochemical deposition showed plateaus at integer multiples of the resistance quantum, (2e2/h)-1, at the room temperature. The iodine tincture is a commercially available common material, which makes the fabrication process to be the simple and cost effective. Moreover, in contrast to the conventional electrochemical approaches, this method is free from highly toxic cyanide compounds or extraordinary strong acid. We expect this method to be a useful interface between single-molecular-scale structures and macroscopic opto-electronic devices.

Origin of the transition voltage in gold–vacuum–gold atomic junctions

International Nuclear Information System (INIS)

Wu Kunlin; Bai Meilin; Hou Shimin; Sanvito, Stefano

2013-01-01

The origin and the distance dependence of the transition voltage of gold–vacuum–gold junctions are investigated by employing first-principles quantum transport simulations. Our calculations show that atomic protrusions always exist on the electrode surface of gold–vacuum–gold junctions fabricated using the mechanically controllable break junction (MCBJ) method. The transition voltage of these gold–vacuum–gold junctions with atomically sharp electrodes is determined by the local density of states (LDOS) of the apex gold atom on the electrode surface rather than by the vacuum barrier shape. More specifically, the absolute value of the transition voltage roughly equals the rising edge of the LDOS peak contributed by the 6p atomic orbitals of the gold atoms protruding from the electrode surface, whose local Fermi level is shifted downwards when a bias voltage is applied. Since the LDOS of the apex gold atom depends strongly on the exact shape of the electrode, the transition voltage is sensitive to the variation of the atomic configuration of the junction. For asymmetric junctions, the transition voltage may also change significantly depending on the bias polarity. Considering that the occurrence of the transition voltage requires the electrode distance to be larger than a critical value, the interaction between the two electrodes is actually rather weak. Consequently, the LDOS of the apex gold atom is mainly determined by its local atomic configuration and the transition voltage only depends weakly on the electrode distance as observed in the MCBJ experiments. (paper)

Development of p-type amorphous Cu{sub 1−x}B{sub x}O{sub 2−δ} thin films and fabrication of pn hetero junction

Energy Technology Data Exchange (ETDEWEB)

Sanal, K.C., E-mail: sanalcusat@gmail.com [Nanophotonic and Optoelectronic Devices Laboratory, Department of Physics, Cochin University of Science and Technology, Kerala 682022 (India); Inter University Center for Nanomaterials and Devices (IUCND), Cochin University of Science and Technology, Kerala 682022 (India); Center for Advanced Materials, Cochin University of Science and Technology, Kerala 682022 (India); Jayaraj, M.K., E-mail: mkj@cusat.ac.in [Nanophotonic and Optoelectronic Devices Laboratory, Department of Physics, Cochin University of Science and Technology, Kerala 682022 (India); Center for Advanced Materials, Cochin University of Science and Technology, Kerala 682022 (India)

2014-07-01

Highlights: • Growth of p-type semiconducting amorphous Cu{sub 1−x}B{sub x}O{sub 2−δ} thin films by co-sputtering. • Atomic percentage of Cu{sub 1−x}B{sub x}O{sub 2−δ} thin films from the XPS analysis. • Variation of bandgap with boron concentration in Cu{sub 1−x}B{sub x}O{sub 2−δ} thin films. • Demonstration of p–n hetero junctions fabricated in the structure n-Si/p-Cu{sub 1−x}B{sub x}O{sub 2−δ}/Au. - Abstract: Transparent conducting amorphous p type Cu{sub 1−x}B{sub x}O{sub 2−δ} thin films were grown by RF magnetron co-sputtering at room temperature, using copper and boron targets in oxygen atmosphere. The structural, electrical as well as optical properties were studied. Composition of the films was analyzed by XPS. Amorphous structure of as deposited films was confirmed by GXRD. Surface morphology of the films was analyzed by AFM studies. p-Type nature and concentration of carriers were investigated by Hall effect measurement. Band gap of the films was found to increase with the atomic content of boron in the film. A p–n hetero junction using p-type Cu{sub 1−x}B{sub x}O{sub 2−δ} and n-type silicon was fabricated in the structure n-Si/p-Cu{sub 1−x}B{sub x}O{sub 2−δ}/Au which showed rectifying behavior. As deposited amorphous Cu{sub 1−x}B{sub x}O{sub 2−δ} thin films with lower carrier concentration can be used as a channel layer for thin film transistors.

Multi-Step Deep Reactive Ion Etching Fabrication Process for Silicon-Based Terahertz Components

Science.gov (United States)

Jung-Kubiak, Cecile (Inventor); Reck, Theodore (Inventor); Chattopadhyay, Goutam (Inventor); Perez, Jose Vicente Siles (Inventor); Lin, Robert H. (Inventor); Mehdi, Imran (Inventor); Lee, Choonsup (Inventor); Cooper, Ken B. (Inventor); Peralta, Alejandro (Inventor)

2016-01-01

A multi-step silicon etching process has been developed to fabricate silicon-based terahertz (THz) waveguide components. This technique provides precise dimensional control across multiple etch depths with batch processing capabilities. Nonlinear and passive components such as mixers and multipliers waveguides, hybrids, OMTs and twists have been fabricated and integrated into a small silicon package. This fabrication technique enables a wafer-stacking architecture to provide ultra-compact multi-pixel receiver front-ends in the THz range.

Linear nanometric tunnel junction sensors with exchange pinned sensing layer

International Nuclear Information System (INIS)

Leitao, D. C.; Silva, A. V.; Cardoso, S.; Ferreira, R.; Paz, E.; Deepack, F. L.; Freitas, P. P.

2014-01-01

Highly sensitive nanosensors with high spatial resolution provide the necessary features for high accuracy imaging of isolated magnetic nanoparticles. In this work, we report the fabrication and characterization of MgO-barrier magnetic tunnel junction nanosensors, with two exchange-pinned electrodes. The perpendicular magnetization configuration for field sensing is set using a two-step annealing process, where the second annealing temperature was optimized to yield patterned sensors responses with improved linearity. The optimized circular nanosensors show sensitivities up to 0.1%/Oe, larger than previously reported for nanometric sensors and comparable to micrometric spin-valves. Our strategy avoids the use of external permanent biasing or demagnetizing fields (large for smaller structures) to achieve a linear response, enabling the control of the linear operation range using only the stack and thus providing a small footprint device

Linear nanometric tunnel junction sensors with exchange pinned sensing layer

Energy Technology Data Exchange (ETDEWEB)

Leitao, D. C., E-mail: dleitao@inesc-mn.pt; Silva, A. V.; Cardoso, S. [INESC-MN and IN, Rua Alves Redol 9, 1000-029 Lisboa (Portugal); Instituto Superior Técnico (IST), Universidade de Lisboa, Av. Rovisco Pais, 1000-029 Lisboa (Portugal); Ferreira, R.; Paz, E.; Deepack, F. L. [INL, Av. Mestre Jose Veiga, 4715-31 Braga (Portugal); Freitas, P. P. [INESC-MN and IN, Rua Alves Redol 9, 1000-029 Lisboa (Portugal); INL, Av. Mestre Jose Veiga, 4715-31 Braga (Portugal)

2014-05-07

Highly sensitive nanosensors with high spatial resolution provide the necessary features for high accuracy imaging of isolated magnetic nanoparticles. In this work, we report the fabrication and characterization of MgO-barrier magnetic tunnel junction nanosensors, with two exchange-pinned electrodes. The perpendicular magnetization configuration for field sensing is set using a two-step annealing process, where the second annealing temperature was optimized to yield patterned sensors responses with improved linearity. The optimized circular nanosensors show sensitivities up to 0.1%/Oe, larger than previously reported for nanometric sensors and comparable to micrometric spin-valves. Our strategy avoids the use of external permanent biasing or demagnetizing fields (large for smaller structures) to achieve a linear response, enabling the control of the linear operation range using only the stack and thus providing a small footprint device.

Linker-dependent Junction Formation Probability in Single-Molecule Junctions

Energy Technology Data Exchange (ETDEWEB)

Yoo, Pil Sun; Kim, Taekyeong [HankukUniversity of Foreign Studies, Yongin (Korea, Republic of)

2015-01-15

We compare the junction formation probabilities of single-molecule junctions with different linker molecules by using a scanning tunneling microscope-based break-junction technique. We found that the junction formation probability varies as SH > SMe > NH2 for the benzene backbone molecule with different types of anchoring groups, through quantitative statistical analysis. These results are attributed to different bonding forces according to the linker groups formed with Au atoms in the electrodes, which is consistent with previous works. Our work allows a better understanding of the contact chemistry in the metal.molecule junction for future molecular electronic devices.

Properties on niobium-based Josephson tunneling elements in junction microstructures

International Nuclear Information System (INIS)

Albrecht, G.; Richter, J.; Weber, P.

1982-01-01

We describe the fabrication and electrical characteristics of niobium oxide-barrier tunnel junctions with counterelectrodes of lead/lead alloy. Primary attention is directed to the experimental conditions necessary to obtain high-quality tunnel barriers as well as studies on characterizing the atomic structure of the barrier region. In order to study the tunnel barrier homogeneity in the tunneling region the magnetic field dependence of the critical Josephson current is investigated. The I--V characteristics and dependence of the critical Josephson current on temperature are analyzed quantitatively by using a proximity effect model. Finally, we discuss experimental results on the improvement of junction quality by including traces of carbon in the rf argon plasma during the sputter cleaning of niobium base electrodes

Y-junction of superconducting Josephson chains

International Nuclear Information System (INIS)

Giuliano, Domenico; Sodano, Pasquale

2009-01-01

We show that, for pertinent values of the fabrication and control parameters, an attractive finite coupling fixed point emerges in the phase diagram of a Y-junction of superconducting Josephson chains. The new fixed point arises only when the dimensionless flux f piercing the central loop of the network equals π and, thus, does not break time-reversal invariance; for f≠π, only the strongly coupled fixed point survives as a stable attractive fixed point. Phase slips (instantons) have a crucial role in establishing this transition: we show indeed that, at f=π, a new set of instantons-the W-instantons-comes into play to destabilize the strongly coupled fixed point. Finally, we provide a detailed account of the Josephson current-phase relationship along the arms of the network, near each one of the allowed fixed points. Our results evidence remarkable similarities between the phase diagram accessible to a Y-junction of superconducting Josephson chains and the one found in the analysis of quantum Brownian motion on frustrated planar lattices

Electronic properties of polyamide-PPy/metal junction and electrical conductivity of a typical sample at low temperatures

International Nuclear Information System (INIS)

Suenel, N.; Sedef, A.G.; Parlak, M.; Toppare, L.

2005-01-01

Electronic properties of junctions fabricated by polyamide-polypyrrole composite films polymerized with adjusted doping concentration and various metal contacts (In, Al, Au and Ag) were investigated. For the junctions giving good rectification I 0 , n and φ b were specified. Conductivity of polyamide-polypyrrole composite polymer was obtained as a function of temperature in the 70-320 K range and was found to obey the VRH model. In addition the Mott parameters were evaluated

Free-form processing of near-net shapes using directed light fabrication

International Nuclear Information System (INIS)

Thoma, D.J.; Lewis, G.K.; Milewski, J.O.; Nemec, R.B.

1997-05-01

Directed light fabrication (DLF) is a rapid fabrication process that fuses gas delivered metal powders within a focal zone of a laser beam to produce fully dense, near-net shape, three-dimensional metal components from a computer generated solid model. Computer controls dictate the metal deposition pathways, and no preforms or molds are required to generate complex sample geometries with accurate and precise tolerances. The DLF technique offers unique advantages over conventional thermomechanical processes or thermal spray processes in that many labor and equipment intensive steps can be avoided to produce components with fully dense microstructures. Moreover, owing to the flexibility in power distributions of lasers, a variety of materials have been processed, ranging from aluminum alloys to tungsten, and including intermetallics such as Mo 5 Si 3 . Since DLF processing offers unique capabilities and advantages for the rapid fabrication of complex metal components, an examination of the microstructural development has been performed in order to define and optimize the processed materials. Solidification studies of DLF processing have demonstrated that a continuous liquid/solid interface is maintained while achieving high constant cooling rates that can be varied between 10 to 10 5 K s -1 and solidification growth rates ranging up to the 10 -2 m s -1

A sacrificial process for fabrication of biodegradable polymer membranes with submicron thickness.

Science.gov (United States)

Beardslee, Luke A; Stolwijk, Judith; Khaladj, Dimitrius A; Trebak, Mohamed; Halman, Justin; Torrejon, Karen Y; Niamsiri, Nuttawee; Bergkvist, Magnus

2016-08-01

A new sacrificial molding process using a single mask has been developed to fabricate ultrathin 2-dimensional membranes from several biocompatible polymeric materials. The fabrication process is similar to a sacrificial microelectromechanical systems (MEMS) process flow, where a mold is created from a material that can be coated with a biodegradable polymer and subsequently etched away, leaving behind a very thin polymer membrane. In this work, two different sacrificial mold materials, silicon dioxide (SiO2 ) and Liftoff Resist (LOR) were used. Three different biodegradable materials; polycaprolactone (PCL), poly(lactic-co-glycolic acid) (PLGA), and polyglycidyl methacrylate (PGMA), were chosen as model polymers. We demonstrate that this process is capable of fabricating 200-500 nm thin, through-hole polymer membranes with various geometries, pore-sizes and spatial features approaching 2.5 µm using a mold fabricated via a single contact photolithography exposure. In addition, the membranes can be mounted to support rings made from either SU8 or PCL for easy handling after release. Cell culture compatibility of the fabricated membranes was evaluated with human dermal microvascular endothelial cells (HDMECs) seeded onto the ultrathin porous membranes, where the cells grew and formed confluent layers with well-established cell-cell contacts. Furthermore, human trabecular meshwork cells (HTMCs) cultured on these scaffolds showed similar proliferation as on flat PCL substrates, further validating its compatibility. All together, these results demonstrated the feasibility of our sacrificial fabrication process to produce biocompatible, ultra-thin membranes with defined microstructures (i.e., pores) with the potential to be used as substrates for tissue engineering applications. © 2015 Wiley Periodicals, Inc. J Biomed Mater Res Part B: Appl Biomater, 104B: 1192-1201, 2016. © 2015 Wiley Periodicals, Inc.

Bi-epitaxial tilted out-of-plane YBCO junctions on NdGaO{sub 3} substrates with YSZ seeding layer

Energy Technology Data Exchange (ETDEWEB)

Mozhaev, P.B. (Institute of Physics and Technology RAS, Moscow (Russian Federation)); Mozhaev, J.E.; Bindslev Hansen, J.; Jacobsen, C.S. (Technical Univ. of Denmark, Dept. of Physics, Kgs. Lyngby (Denmark)); Kotelyanskil, I.M.; Luzanov, V.A. (Institute of Radio Engineering and Electronics RAS, Moscow (Russian Federation)); Benacka, S.; Strbik, V. (Institute of Electrical Engineering SAS, Bratislava (SK))

2008-10-15

Bi-epitaxial junctions with out-of plane tilt of the c axis were fabricated of YBCO superconducting thin films on NdGaO{sub 3} substrates with different miscut angles. Bi-epitaxial growth was provided by implementation of an Y:ZrO{sub 2} seeding layer on a certain part of the substrate. Junctions with different orientation of the bi-epitaxial boundaries were fabricated, their DC electrical properties were studied as a function of the boundary orientation angle. The junctions showed extremely high critical current densities for all tested miscut angles and bi-epitaxial boundary orientations (about 105 A/cm2 at 77 K and up to 106 A/cm2 at 4.2 K). The dependence of critical current density on the bi-epitaxial boundary orientation angle may be explained as an effect of a d-wave pairing mechanism in the HTSC with the simple Sigrist-Rice model. The studied boundaries may be considered as model structures for the grain boundaries in the coated conductors. (au)

Development of NbN Josephson junctions with TaxN semi-metal barrier; application to RSFQ circuits

International Nuclear Information System (INIS)

Setzu, R.

2007-11-01

This thesis research, brought to the development and optimization of SNS (Superconductor / Normal Metal / Superconductor) Josephson junctions with NbN electrodes and a high resistivity Ta x N barrier. We were able to point out Josephson oscillations for frequencies above 1 THz and operation temperatures up to 10 K, which constituted the original goal of the project. This property makes these junctions unique and well adapted for realizing ultra-fast RSFQ (Rapid Single Flux Quantum) logic circuits suitable for spatial telecommunications. We showed a good reproducibility of Ta x N film properties as a function of the sputtering parameters. The NbN/Ta x N/NbN tri-layers exhibit high critical temperature (16 K). The junctions showed a clear dependence of the R n I c product as a function of the partial nitrogen pressure inside the reactive plasma; the R n I c is the product between the junction critical current and its normal resistance, and indicates the upper limit Josephson frequency. We have also obtained some really high R n I c products, up to 3.74 mV at 4.2 K for critical current densities of about 15 kA/cm 2 . Junctions show the expected Josephson behaviors, respectively Fraunhofer diffraction and Shapiro steps. up to 14 K. This allows expecting good circuit operations in a relaxed cryogenics environment (with respect to the niobium circuits limited at 4.2 K). The junctions appear to be self-shunted. The SNOP junctions J c -temperature dependence has been fitted by using the long SNS junction model in the dirty limit, which gives a normal metal coherence length of about 3.8 nm at 4.2 K. We have finally studied a multilayer fabrication process, including a common ground plane and bias resistors, suitable for RSFQ logic basic circuits. To conclude we have been able to show the performance superiority of NbN/Ta x N/NbN junctions over the actual niobium junctions, as well as their interest for realizing compact RSFQ logic circuits. In fact these junctions do not

Process for fabricating composite material having high thermal conductivity

Science.gov (United States)

Colella, Nicholas J.; Davidson, Howard L.; Kerns, John A.; Makowiecki, Daniel M.

2001-01-01

A process for fabricating a composite material such as that having high thermal conductivity and having specific application as a heat sink or heat spreader for high density integrated circuits. The composite material produced by this process has a thermal conductivity between that of diamond and copper, and basically consists of coated diamond particles dispersed in a high conductivity metal, such as copper. The composite material can be fabricated in small or relatively large sizes using inexpensive materials. The process basically consists, for example, of sputter coating diamond powder with several elements, including a carbide forming element and a brazeable material, compacting them into a porous body, and infiltrating the porous body with a suitable braze material, such as copper-silver alloy, thereby producing a dense diamond-copper composite material with a thermal conductivity comparable to synthetic diamond films at a fraction of the cost.

Bottom-up, Robust Graphene Ribbon Electronics in All-Carbon Molecular Junctions.

Science.gov (United States)

Supur, Mustafa; Van Dyck, Colin; Bergren, Adam J; McCreery, Richard L

2018-02-21

Large-area molecular electronic junctions consisting of 5-carbon wide graphene ribbons (GR) with lengths of 2-12 nm between carbon electrodes were fabricated by electrochemical reduction of diazotized 1,8-diaminonaphthalene. Their conductance greatly exceeds that observed for other molecular junctions of similar thicknesses, by a factor of >1 × 10 4 compared to polyphenylenes and >1 × 10 7 compared to alkane chains. The remarkable increase of conductance of the GR nanolayer results from (i) uninterrupted planarity of fused-arene structure affording extensive π-electron delocalization and (ii) enhanced electronic coupling of molecular layer with the carbon bottom contact by two-point covalent bonding, in agreement with DFT-based simulations.

A Highly Controllable Electrochemical Anodization Process to Fabricate Porous Anodic Aluminum Oxide Membranes

Science.gov (United States)

Lin, Yuanjing; Lin, Qingfeng; Liu, Xue; Gao, Yuan; He, Jin; Wang, Wenli; Fan, Zhiyong

2015-12-01

Due to the broad applications of porous alumina nanostructures, research on fabrication of anodized aluminum oxide (AAO) with nanoporous structure has triggered enormous attention. While fabrication of highly ordered nanoporous AAO with tunable geometric features has been widely reported, it is known that its growth rate can be easily affected by the fluctuation of process conditions such as acid concentration and temperature during electrochemical anodization process. To fabricate AAO with various geometric parameters, particularly, to realize precise control over pore depth for scientific research and commercial applications, a controllable fabrication process is essential. In this work, we revealed a linear correlation between the integrated electric charge flow throughout the circuit in the stable anodization process and the growth thickness of AAO membranes. With this understanding, we developed a facile approach to precisely control the growth process of the membranes. It was found that this approach is applicable in a large voltage range, and it may be extended to anodization of other metal materials such as Ti as well.

Processing and characterization of multilayers for energy device fabrication (invited)

DEFF Research Database (Denmark)

Kaiser, Andreas; Kiebach, Wolff-Ragnar; Gurauskis, Jonas

SOFC and tubular OTM, we present selected challenges in ceramic processing such asymmetric multilayer structures. By optimizing different steps in the ceramic processing, we improved the mechanical properties and gas permeability of porous supports and the (electrochemical) performance of electrodes......The performance of asymmetric multilayer structures in solid oxide fuel cells (SOFC)/solid oxide electrolysis cells (SOEC), tubular oxygen transport membranes (OTM) and similar high temperature energy devices is often determined by the ceramic fabrication (for given materials and design). A good...... understanding and control of different processing steps (from powder/materials selection, through shaping and sintering) is of crucial importance to achieve a defect-free multilayer microstructure with the desired properties and performance. Based on the experiences at DTU Energy with the fabrication of planar...

The junction between hyaline cartilage and engineered cartilage in rabbits.

Science.gov (United States)

Komura, Makoto; Komura, Hiroko; Otani, Yushi; Kanamori, Yutaka; Iwanaka, Tadashi; Hoshi, Kazuto; Tsuyoshi, Takato; Tabata, Yasuhiko

2013-06-01

Tracheoplasty using costal cartilage grafts to enlarge the tracheal lumen was performed to treat congenital tracheal stenosis. Fibrotic granulomatous tissue was observed at the edge of grafted costal cartilage. We investigated the junction between the native hyaline cartilage and the engineered cartilage plates that were generated by auricular chondrocytes for fabricating the airway. Controlled, prospecive study. In group 1, costal cartilage from New Zealand white rabbits was collected and implanted into a space created in the cervical trachea. In group 2, chondrocytes from auricular cartilages were seeded on absorbable scaffolds. These constructs were implanted in the subcutaneous space. Engineered cartilage plates were then implanted into the trachea after 3 weeks of implantation of the constructs. The grafts in group 1 and 2 were retrieved after 4 weeks. In group 1, histological studies of the junction between the native hyaline cartilage and the implanted costal cartilage demonstrated chondrogenic tissue in four anastomoses sides out of the 10 examined. In group 2, the junction between the native trachea and the engineered cartilage showed neocartilage tissue in nine anastomoses sides out of 10. Engineered cartilage may be beneficial for engineered airways, based on the findings of the junction between the native and engineered grafts. Copyright © 2012 The American Laryngological, Rhinological and Otological Society, Inc.

Investigation of small scale sphere-pac fuel fabrication plant with external gelation process

International Nuclear Information System (INIS)

Maekawa, Kazuhiko; Yoshimura, Tadahiro; Kikuchi, Toshiaki; Hoshino, Yasushi; Munekata, Hideki; Shimizu, Makoto

2005-02-01

In feasibility studies on commercialized FBR cycle system, comprehensive system investigation and properties evaluation for candidate FBR cycle systems have been implemented through view point of safety, economics, environmental burden reduction, non-proliferation resistivity, etc. As part of these studies, an investigation of small scale sphere-pac fuel fabrication plant with external gelation process was conducted. Until last fiscal year, equipment layout in cells and overall layout design of the 200t-HM/y scale fuel fabrication plant were conducted as well as schematical design studies on main equipments in gelation and reagent recovery processes of the plant. System property data concerning economics and environmental burden reduction of fuel fabrication plant was also acquired. In this fiscal year, the processes from vibropacking to fuel assemblies storage were added to the investigation range, and a conceptual design of whole fuel fabrication plant was studied as well as deepening the design study on main equipments. The conceptual design study was mainly conducted for small 50t-HM/y scale plant and a revising investigation was done for 200t-HM/y scale plant. Taking the planed comparative evaluation with pellet fuel fabrication system into account, design of equipments which should be equivalent with pellet system, especially in post-vibropacking processes, were standardized in each system. Based on these design studies, system properties data concerning economics and environmental burden reduction of the plant was also acquired. In comparison with existing design, the cell height was lowered on condition that plug type pneumatic system was adopted and fuel fabrication building was downsized by applying rationalized layout design of pellet system to post-vibropacking processes. Reduction of reagent usage at gelation process and rationalization of sintering and O/M controlling processes etc., are foremost tasks. (author)

Investigation of heat treatment conditions of structural material for blanket fabrication process

International Nuclear Information System (INIS)

Hirose, Takanori; Suzuki, Satoshi; Akiba, Masato; Shiba, Kiyoyuki; Sawai, Tomotsugu; Jitsukawa, Shiro

2004-01-01

This paper presents recent results of thermal hysteresis effects on ceramic breeder blanket structural material. Reduced activation ferritic/martensitic (RAF) steel is the leading candidates for the first wall structural materials of breeding blankets. RAF steel demonstrates superior resistance to high dose neutron irradiation, because the steel has tempered martensite structure which contains the number of sink site for radiation defects. This microstructure obtained by two-step heat treatment, first is normalizing at temperature above 1200 K and the second is tempering at temperature below 1100 K. Recent study revealed the thermal hysteresis has significant impacts on the post-irradiation mechanical properties. The breeding blanket has complicated structure, which consists of tungsten armor and thin first wall with cooling pipe. The blanket fabrication requires some high temperature joining processes. Especially hot isostatic pressing (HIP) is examined as a near-net-shape fabrication process for this structure. The process consists of heating above 1300 K and isostatic pressing at the pressure above 150 MPa followed by tempering. Moreover ceramics pebbles are packed into blanket module and the module is to be seamed by welding followed by post weld heat treatment in the final assemble process. Therefore the final microstructural features of RAFs strongly depend on the blanket fabrication process. The objective of this work is to evaluate the effects of thermal hysteresis corresponding to blanket fabrication process on RAFs microstructure in order to establish appropriate blanket fabrication process. Japanese RAFs F82H (Fe-0.1C-8Cr-2W-0.2V-0.05Ta) was investigated by metallurgical method after isochronal heat treatment up to 1473 K simulating high temperature bonding process. Although F82H showed significant grain growth after conventional solid HIP conditions (1313 K x 2 hr.), this coarse grained microstructure was refined by the post HIP normalizing at

Impact of process temperature on GaSb metal-oxide-semiconductor interface properties fabricated by ex-situ process

Energy Technology Data Exchange (ETDEWEB)

Yokoyama, Masafumi, E-mail: yokoyama@mosfet.t.u-tokyo.ac.jp; Takenaka, Mitsuru; Takagi, Shinichi [Department of Electrical Engineering and Information Systems, The University of Tokyo, Yayoi 2-11-16, Bunkyo, Tokyo 113-0032 (Japan); JST-CREST, Yayoi 2-11-16, Bunkyo, Tokyo 113-0032 (Japan); Asakura, Yuji [Department of Electrical Engineering and Information Systems, The University of Tokyo, Yayoi 2-11-16, Bunkyo, Tokyo 113-0032 (Japan); Yokoyama, Haruki [NTT Photonics Laboratories, NTT Corporation, Atsugi 243-0198 (Japan)

2014-06-30

We have studied the impact of process temperature on interface properties of GaSb metal-oxide-semiconductor (MOS) structures fabricated by an ex-situ atomic-layer-deposition (ALD) process. We have found that the ALD temperature strongly affects the Al{sub 2}O{sub 3}/GaSb MOS interface properties. The Al{sub 2}O{sub 3}/GaSb MOS interfaces fabricated at the low ALD temperature of 150 °C have the minimum interface-trap density (D{sub it}) of ∼4.5 × 10{sup 13 }cm{sup −2} eV{sup −1}. We have also found that the post-metalization annealing at temperature higher than 200 °C degrades the Al{sub 2}O{sub 3}/GaSb MOS interface properties. The low-temperature process is preferable in fabricating GaSb MOS interfaces in the ex-situ ALD process to avoid the high-temperature-induced degradations.

Preparation and properties of Ni80Fe20/Al2O3/Co magnetic tunnel junctions

International Nuclear Information System (INIS)

Chen Jing; Du Jun; Wu Xiaoshan; Pan Minghu; Long Jianguo; Zhang Wei; Lu Mu; Hu An; Zhai Hongru

2000-01-01

With plasma oxidisation to create an insulating layer of Al 2 O 3 , the authors have repeatedly fabricated Ni 80 Fe 20 /Al 2 O 3 /Co magnetic tunnel junctions which show obvious tunneling magnetoresistance (TMR) effect. At room temperature, the maximum TMR ratio reaches 6.0%. The switch field can be less than 800 A/m with a relative step width of about 2400 A/m. The junction resistance changes from hundreds of ohms to hundreds of kilo-ohms

What happens in Josephson junctions at high critical current densities

Science.gov (United States)

Massarotti, D.; Stornaiuolo, D.; Lucignano, P.; Caruso, R.; Galletti, L.; Montemurro, D.; Jouault, B.; Campagnano, G.; Arani, H. F.; Longobardi, L.; Parlato, L.; Pepe, G. P.; Rotoli, G.; Tagliacozzo, A.; Lombardi, F.; Tafuri, F.

2017-07-01

The impressive advances in material science and nanotechnology are more and more promoting the use of exotic barriers and/or superconductors, thus paving the way to new families of Josephson junctions. Semiconducting, ferromagnetic, topological insulator and graphene barriers are leading to unconventional and anomalous aspects of the Josephson coupling, which might be useful to respond to some issues on key problems of solid state physics. However, the complexity of the layout and of the competing physical processes occurring in the junctions is posing novel questions on the interpretation of their phenomenology. We classify some significant behaviors of hybrid and unconventional junctions in terms of their first imprinting, i.e., current-voltage curves, and propose a phenomenological approach to describe some features of junctions characterized by relatively high critical current densities Jc. Accurate arguments on the distribution of switching currents will provide quantitative criteria to understand physical processes occurring in high-Jc junctions. These notions are universal and apply to all kinds of junctions.

Modeling of an improved chemical vapor infiltration process for ceramic composites fabrication

International Nuclear Information System (INIS)

Tai, N.H.; Chou, T.W.

1990-01-01

A quasi-steady-state approach is applied to model the pressure-driven, temperature-gradient chemical vapor infiltration (improved CVI process) for ceramic matrix composites fabrication. The deposited matrix in this study is SiC which is converted from the thermal decomposition of methyltrichlorosilane gas under excess hydrogen. A three-dimensional unit cell is adopted to simulate the spatial arrangements of reinforcements in discontinuous fiber mats and three-dimensionally woven fabrics. The objectives of this paper are to predict the temperature and density distributions in a fibrous preform during processing, the advancement of the solidified front, the total fabrication period, and the vapor inlet pressure variation for maintaining a constant flow rate

Bioinspired superhydrophobic surfaces, fabricated through simple and scalable roll-to-roll processing.

Science.gov (United States)

Park, Sung-Hoon; Lee, Sangeui; Moreira, David; Bandaru, Prabhakar R; Han, InTaek; Yun, Dong-Jin

2015-10-22

A simple, scalable, non-lithographic, technique for fabricating durable superhydrophobic (SH) surfaces, based on the fingering instabilities associated with non-Newtonian flow and shear tearing, has been developed. The high viscosity of the nanotube/elastomer paste has been exploited for the fabrication. The fabricated SH surfaces had the appearance of bristled shark skin and were robust with respect to mechanical forces. While flow instability is regarded as adverse to roll-coating processes for fabricating uniform films, we especially use the effect to create the SH surface. Along with their durability and self-cleaning capabilities, we have demonstrated drag reduction effects of the fabricated films through dynamic flow measurements.

Resonant TMR inversion in LiF/EuS based spin-filter tunnel junctions

Directory of Open Access Journals (Sweden)

Fen Liu

2016-08-01

Full Text Available Resonant tunneling can lead to inverse tunnel magnetoresistance when impurity levels rather than direct tunneling dominate the transport process. We fabricated hybrid magnetic tunnel junctions of CoFe/LiF/EuS/Ti, with an epitaxial LiF energy barrier joined with a polycrystalline EuS spin-filter barrier. Due to the water solubility of LiF, the devices were fully packaged in situ. The devices showed sizeable positive TMR up to 16% at low bias voltages but clearly inverted TMR at higher bias voltages. The TMR inversion depends sensitively on the thickness of LiF, and the tendency of inversion disappears when LiF gets thick enough and recovers its intrinsic properties.

Experimental analysis and theoretical model for anomalously high ideality factors in ZnO/diamond p-n junction diode

International Nuclear Information System (INIS)

Wang Chengxin; Yang Guowei; Liu Hongwu; Han Yonghao; Luo Jifeng; Gao Chunxiao; Zou Guangtian

2004-01-01

High-quality heterojunctions between p-type diamond single-crystalline films and highly oriented n-type ZnO films were fabricated by depositing the p-type diamond single-crystal films on the I o -type diamond single crystal using a hot filament chemical vapor deposition, and later growing a highly oriented n-type ZnO film on the p-type diamond single-crystal film by magnetron sputtering. Interestingly, anomalously high ideality factors (n>>2.0) in the prepared ZnO/diamond p-n junction diode in the interim bias voltage range were measured. For this, detailed electronic characterizations of the fabricated p-n junction were conducted, and a theoretical model was proposed to clarify the much higher ideality factors of the special heterojunction diode

Atomically Thin Al2O3 Films for Tunnel Junctions

Science.gov (United States)

Wilt, Jamie; Gong, Youpin; Gong, Ming; Su, Feifan; Xu, Huikai; Sakidja, Ridwan; Elliot, Alan; Lu, Rongtao; Zhao, Shiping; Han, Siyuan; Wu, Judy Z.

2017-06-01

Metal-insulator-metal tunnel junctions are common throughout the microelectronics industry. The industry standard AlOx tunnel barrier, formed through oxygen diffusion into an Al wetting layer, is plagued by internal defects and pinholes which prevent the realization of atomically thin barriers demanded for enhanced quantum coherence. In this work, we employ in situ scanning tunneling spectroscopy along with molecular-dynamics simulations to understand and control the growth of atomically thin Al2O3 tunnel barriers using atomic-layer deposition. We find that a carefully tuned initial H2O pulse hydroxylated the Al surface and enabled the creation of an atomically thin Al2O3 tunnel barrier with a high-quality M -I interface and a significantly enhanced barrier height compared to thermal AlOx . These properties, corroborated by fabricated Josephson junctions, show that atomic-layer deposition Al2O3 is a dense, leak-free tunnel barrier with a low defect density which can be a key component for the next generation of metal-insulator-metal tunnel junctions.

A new spin-functional MOSFET based on magnetic tunnel junction technology: pseudo-spin-MOSFET

OpenAIRE

Shuto, Yusuke; Nakane, Ryosho; Wang, Wenhong; Sukegawa, Hiroaki; Yamamoto, Shuu'ichirou; Tanaka, Masaaki; Inomata, Koichiro; Sugahara, Satoshi

2009-01-01

We fabricated and characterized a new spin-functional MOSFET referred to as a pseudo-spin-MOSFET (PS-MOSFET). The PS-MOSFET is a circuit using an ordinary MOSFET and magnetic tunnel junction (MTJ) for reproducing functions of spin-transistors. Device integration techniques for a bottom gate MOSFET using a silicon-on-insulator (SOI) substrate and for an MTJ with a full-Heusler alloy electrode and MgO tunnel barrier were developed. The fabricated PS-MOSFET exhibited high and low transconductanc...

Electronic properties of polyamide-PPy/metal junction and electrical conductivity of a typical sample at low temperatures

Energy Technology Data Exchange (ETDEWEB)

Suenel, N. [Gaziosmanpasa University, Physics Department, Tasliciftlik Kampasu, Tokat (Turkey)]. E-mail: nsunel@gop.edu.tr; Sedef, A.G. [Gaziosmanpasa University, Physics Department, Tasliciftlik Kampasu, Tokat (Turkey); Parlak, M. [Middle East Technical University, Physics Department, Ankara (Turkey); Toppare, L. [Middle East Technical University, Chemistry Department, Ankara (Turkey)

2005-05-15

Electronic properties of junctions fabricated by polyamide-polypyrrole composite films polymerized with adjusted doping concentration and various metal contacts (In, Al, Au and Ag) were investigated. For the junctions giving good rectification I{sub 0}, n and {phi}{sub b} were specified. Conductivity of polyamide-polypyrrole composite polymer was obtained as a function of temperature in the 70-320 K range and was found to obey the VRH model. In addition the Mott parameters were evaluated.

Visualization of the current density in Josephson junctions with 0- and π-facets

International Nuclear Information System (INIS)

Guerlich, Christian

2010-01-01

With Low-Temperature-Electron-Microscopy (LTSEM) it is possible to analyse the transport properties of solids at low temperatures. In particular it is possible to image the supercurrent density j s in Josephson junctions. This was demonstrated by comparing TTREM-images with calculated values for j s . In this thesis ramp-type Nd 2-x Ce x CuO 4-y /Nb-Josephson-junctions (NCCO/Nb) and Josephson junctions with a ferromagnetic interlayer Nb/Al-Al 2 O 3 /NiCu/Nb, so-called SIFS (superconductor-insulator-ferromagnet-superconductor) Josephson junctions were studied.It was demonstrated that LTSEM provides direct imaging of the sign change of the order parameter in superconductors with d x 2 -y 2 -symmetry. This was a controversial issue over the last decade. A step like variation in the thickness of the F-layer allows the fabrication of linear and annular Josephson junctions with different numbers of 0 and π facets. With the LTSEM 0-, π-, 0-π-, 0-π-0-, 0/2-π-0/2-, 20 x (0-π)- as well as square-shaped-, circular- and annular-Josephson-junctions were studied. It was demonstrated, that these junctions are of good quality and have critical current densities up to 42 A/cm 2 at T=4.2 K, which is a record value for SIFS junctions with a NiCu F-layer so far. By comparing the measurements with simulations a first indication of a semifluxon at the 0-π-boundary was found. (orig.)

Relationship between single-event upset immunity and fabrication processes of recent memories

International Nuclear Information System (INIS)

Nemoto, N.; Shindou, H.; Kuboyama, S.; Matsuda, S.; Itoh, H.; Okada, S.; Nashiyama, I.

1999-01-01

Single-Event upset (SEU) immunity for commercial devices were evaluated by irradiation tests using high-energy heavy ions. We show test results and describe the relationship between observed SEU and structures/fabrication processes. We have evaluated single-even upset (SEU) tolerance of recent commercial memory devices using high energy heavy ions in order to find relationship between SEU rate and their fabrication process. It was revealed that the change of the process parameter gives much effect for the SEU rate of the devices. (authors)

Dustless Process for Minor Actinide-Bearing Blanket Fabrication

International Nuclear Information System (INIS)

Caisso, M.; Lebreton, F.; Horlait, D.; Delahaye, Th.; Picart, S.; Martin, Ph.M.; Renard, C.; Roussel, P.; Neuville, D.R.; Belin, R.C.; Dardenne, K.; Rothe, J.; Ayral, A.

2015-01-01

U 1-x Am x O 2±δ mixed-oxides are considered promising compounds for americium heterogeneous transmutation in fast neutron reactor. At lab-scale, the fabrication of americium bearing blankets (AmBB) under the form of ceramic pellets, required for irradiation, follows a powder metallurgy route which generates highly contaminant fine particles. Considering scale-up, dustless processes that can avoid particle dispersion in the fabrication lines are thus recommended. With this aim, the development of an innovative route called calcined resin microsphere pelletizing (CRMP) process has been initiated. The general approach consists in synthesising mixed-oxide microsphere precursors from beads of ion exchange resin through an adaptation of the weak acid resin process (WAR), and their pelletizing before sintering. This study focuses on the microsphere synthesis and particularly on the mechanisms implied during the thermal conversion of metal loaded ion exchange resin in porous mixed-oxide microspheres. The results are discussed, in a first time, on the basis of the synthesis of oxide microspheres integrating uranium and americium surrogates (Ce and Gd respectively) before a transposition to the highly active materials in a second time. (authors)

Spin polarized electron tunneling and magnetoresistance in molecular junctions.

Science.gov (United States)

Szulczewski, Greg

2012-01-01

This chapter reviews tunneling of spin-polarized electrons through molecules positioned between ferromagnetic electrodes, which gives rise to tunneling magnetoresistance. Such measurements yield important insight into the factors governing spin-polarized electron injection into organic semiconductors, thereby offering the possibility to manipulate the quantum-mechanical spin degrees of freedom for charge carriers in optical/electrical devices. In the first section of the chapter a brief description of the Jullière model of spin-dependent electron tunneling is reviewed. Next, a brief description of device fabrication and characterization is presented. The bulk of the review highlights experimental studies on spin-polarized electron tunneling and magnetoresistance in molecular junctions. In addition, some experiments describing spin-polarized scanning tunneling microscopy/spectroscopy on single molecules are mentioned. Finally, some general conclusions and prospectus on the impact of spin-polarized tunneling in molecular junctions are offered.

Modeling Bloch oscillations in ultra-small Josephson junctions

Science.gov (United States)

Vora, Heli; Kautz, Richard; Nam, Sae Woo; Aumentado, Jose

In a seminal paper, Likharev et al. developed a theory for ultra-small Josephson junctions with Josephson coupling energy (Ej) less than the charging energy (Ec) and showed that such junctions demonstrate Bloch oscillations which could be used to make a fundamental current standard that is a dual of the Josephson volt standard. Here, based on the model of Geigenmüller and Schön, we numerically calculate the current-voltage relationship of such an ultra-small junction which includes various error processes present in a nanoscale Josephson junction such as random quasiparticle tunneling events and Zener tunneling between bands. This model allows us to explore the parameter space to see the effect of each process on the width and height of the Bloch step and serves as a guide to determine whether it is possible to build a quantum current standard of a metrological precision using Bloch oscillations.

Novel magnetic wire fabrication process by way of nanoimprint lithography for current induced magnetization switching

Science.gov (United States)

Asari, Tsukasa; Shibata, Ryosuke; Awano, Hiroyuki

2017-05-01

Nanoimprint lithography (NIL) is an effective method to fabricate nanowire because it does not need expensive systems and this process is easier than conventional processes. In this letter, we report the Current Induced Magnetization Switching (CIMS) in perpendicularly magnetized Tb-Co alloy nanowire fabricated by NIL. The CIMS in Tb-Co alloy wire was observed by using current pulse under in-plane external magnetic field (HL). We successfully observed the CIMS in Tb-Co wire fabricated by NIL. Additionally, we found that the critical current density (Jc) for the CIMS in the Tb-Co wire fabricated by NIL is 4 times smaller than that fabricated by conventional lift-off process under HL = 200Oe. These results indicate that the NIL is effective method for the CIMS.

Characteristic features of silicon multijunction solar cells with vertical p-n junctions

International Nuclear Information System (INIS)

Guk, E.G.; Nalet, T.A.; Shvarts, M.Z.; Shuman, V.B.

1997-01-01

A relatively simple technology (without photolithography) based on diffusion welding and ion-plasma deposition of an insulating coating has been developed for fabricating multijunction silicon solar cells with vertical p-n junctions. The effective collection factor for such structures is independent of the wavelength of the incident light in the wavelength range λ=340-1080 nm

Fabrication and electrical characterizations of graphene nanocomposite thin film based heterojunction diode

Science.gov (United States)

Rahim, Ishrat; Shah, Mutabar; Iqbal, Mahmood; Wahab, Fazal; Khan, Afzal; Khan, Shah Haider

2017-11-01

The use of graphene in electronic devices is becoming attractive due to its inherent scalability and is thus well suited for flexible electronic devices. Here we present the electrical characterization of heterojunction diode, based on the nanocomposite of graphene (G) with silver nanoparticles (Ag NPs), at room temperature. The diode was fabricated by depositing nanocomposite on the n-Si substrate. The current - voltage (I - V) characteristic of the fabricated junction shows rectifying behavior similar to a Schottky junction. The junction parameters such as ideality factor (n), series resistance (Rs), and barrier height (ϕb) has been extracted, using various methods, from the experimentally obtained I - V data. The measured values of n, Rs and ϕb are 3.86, 45 Ω and 0.367 eV, respectively, as calculated from the I - V curve. The numerical values of these parameters calculated by different methods are in good agreement with each other showing the consistency of the applied calculating techniques. The conduction mechanism of the fabricated diode seems to have been dominated by the Trap Charge Limited Conduction (TCLC) behavior. The energy distribution of interface states density determined from forward bias I - V characteristic shows an exponential decrease with bias from 27 × 1013 cm-2 eV-1 at (Ec - 0.345) eV to 3 × 1013 cm-2 eV-1at (Ec - 0.398) eV.

Fabrication of HTR fuel elements by a gaseous impregnation process

International Nuclear Information System (INIS)

Blin, J.C.; Berthier, J.; Devillard, J.

1976-01-01

The results obtained with the gaseous impregnation process are described. The successive steps of the fabrication in their present state of realization are given together with the results obtained after irradiation. A comparison between this process and a classical method is presented

Vibrationally coupled electron transport through single-molecule junctions

Energy Technology Data Exchange (ETDEWEB)

Haertle, Rainer

2012-04-26

Single-molecule junctions are among the smallest electric circuits. They consist of a molecule that is bound to a left and a right electrode. With such a molecular nanocontact, the flow of electrical currents through a single molecule can be studied and controlled. Experiments on single-molecule junctions show that a single molecule carries electrical currents that can even be in the microampere regime. Thereby, a number of transport phenomena have been observed, such as, for example, diode- or transistor-like behavior, negative differential resistance and conductance switching. An objective of this field, which is commonly referred to as molecular electronics, is to relate these transport phenomena to the properties of the molecule in the contact. To this end, theoretical model calculations are employed, which facilitate an understanding of the underlying transport processes and mechanisms. Thereby, one has to take into account that molecules are flexible structures, which respond to a change of their charge state by a profound reorganization of their geometrical structure or may even dissociate. It is thus important to understand the interrelation between the vibrational degrees of freedom of a singlemolecule junction and the electrical current flowing through the contact. In this thesis, we investigate vibrational effects in electron transport through singlemolecule junctions. For these studies, we calculate and analyze transport characteristics of both generic and first-principles based model systems of a molecular contact. To this end, we employ a master equation and a nonequilibrium Green's function approach. Both methods are suitable to describe this nonequilibrium transport problem and treat the interactions of the tunneling electrons on the molecular bridge non-perturbatively. This is particularly important with respect to the vibrational degrees of freedom, which may strongly interact with the tunneling electrons. We show in detail that the resulting

pn junctions based on a single transparent perovskite semiconductor BaSnO3

Science.gov (United States)

Kim, Hoon Min; Kim, Useong; Park, Chulkwon; Kwon, Hyukwoo; Lee, Woongjae; Kim, Tai Hoon; Kim, Kee Hoon; Char, Kookrin; Mdpl, Department Of Physics; Astronomy Team; Censcmr, Department Of Physics; Astronomy Team

2014-03-01

Successful p doping of transparent oxide semiconductor will further increase its potential, especially in the area of optoelectronic applications. We will report our efforts to dope the BaSnO3 (BSO) with K by pulsed laser deposition. Although the K doped BSO exhibits rather high resistivity at room temperature, its conductivity increases dramatically at higher temperatures. Furthermore, the conductivity decreases when a small amount of oxygen was removed from the film, consistent with the behavior of p type doped oxides. We have fabricated pn junctions by using K doped BSO as a p type and La doped BSO as an n type material. I_V characteristics of these devices show the typical rectifying behavior of pn junctions. We will present the analysis of the junction properties from the temperature dependent measurement of their electrical properties, which shows that the I_V characteristics are consistent with the material parameters such as the carrier concentration, the mobility, and the bandgap. Our demonstration of pn junctions based on a single transparent perovskite semiconductor further enhances the potential of BSO system with high mobility and stability.

Enhancement of UV photodetector properties of ZnO nanorods/PEDOT:PSS Schottky junction by NGQD sensitization along with conductivity improvement of PEDOT:PSS by DMSO additive

Science.gov (United States)

Dhar, Saurab; Majumder, Tanmoy; Chakraborty, Pinak; Mondal, Suvra Prakash

2018-04-01

Schottky junction ultraviolet (UV) photodetector was fabricated by spin coating a hole conducting polymer, poly 3,4-ethylenedioxythiophene: polystyrene sulfonate (PEDOT:PSS) on hydrothermally grown zinc oxide (ZnO) nanorod arrays. The UV detector performance was significantly improved two step process. Firstly, ZnO nanorods were modified by sensitizing N doped grapheme quantum dots (NGQDs) for better photoresponce behavior. Afterwards, the junction properties as well as photoresponse was enhanced by modifying electrical conductivity of PEDOT:PSS layer with organic solvent (DMSO). Our NGQD decorated ZnO NRs/DMSO-PEDOT:PSS Schottky junction device demonstrated superior external quantum efficiency (EQE ˜ 90063 %) and responsivity (Rλ˜247 A/W) at 340 nm wavelength and -1V external bias. The response and recovery times of the final photodetector device was very fast compared to GQD as well as NGQD modified and pristine ZnO nanorod based detectors.

A Novel Continuous Extrusion Process to Fabricate Wedge-Shaped Light Guide Plates

Directory of Open Access Journals (Sweden)

Wen-Tse Hsiao

2013-01-01

Full Text Available Backlight modules are key components in thin-film transistor liquid crystal displays (TFT-LCD. Among the components of a backlight module, the light guide plate (LGP plays the most important role controlling the light projected to the eyes of users. A wedge-shaped LGP, with its asymmetrical structure, is usually fabricated by an injection proces, but the fabrication time of this process is long. This study proposes a continuous extrusion process to fabricate wedge-shaped LGPs. This continuous process has advantages for mass production. Besides a T-die and rollers, this system also has an in situ monitor of the melt-bank that forms during the extrusion process, helping control the plate thickness. Results show that the melt bank has a close relationship with the plate thickness. The temperature of the bottom heater and roller was adjusted to reduce the surface deformation of the wedge-shaped plate. This continuous extrusion system can successfully manufacture wedge-shaped LGPs for mass production.

Mechanical design and fabrication processes for the ALS third-harmonic cavities

International Nuclear Information System (INIS)

Franks, M.; Henderson, T.; Hernandez, K.; Otting, D.; Plate, D.; Rimmer, R.

1999-01-01

It is planned to install five third-harmonic (1.5 GHz) RF Cavities in May/June 1999 as an upgrade to the Advanced Light Source (ALS) at Lawrence Berkeley National Laboratory (LBNL). This paper presents mechanical design features, their experiences in using electronic design models to expedite the manufacturing process, and the fabrication processes employed to produce these cavities for the ALS. They discuss some of the lessons learned from the PEP-II RF Cavity design and fabrication, and outline the improvements incorporated in the new design. They also report observations from the current effort

Single grain boundary break junction for suspended nanogap electrodes with gapwidth down to 1-2 nm by focused ion beam milling.

Science.gov (United States)

Cui, Ajuan; Liu, Zhe; Dong, Huanli; Wang, Yujin; Zhen, Yonggang; Li, Wuxia; Li, Junjie; Gu, Changzhi; Hu, Wenping

2015-05-20

Single grain boundary junctions are used for the fabrication of suspended nanogap electrodes with a gapwidth down to 1-2 nm through the break of such junctions by focused ion beam (FIB) milling. With advantages of stability and no debris, such nanogap electrodes are suitable for single molecular electronic device construction. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Origin of the transition voltage in gold–vacuum–gold atomic junctions

KAUST Repository

Wu, Kunlin

2012-12-13

The origin and the distance dependence of the transition voltage of gold-vacuum-gold junctions are investigated by employing first-principles quantum transport simulations. Our calculations show that atomic protrusions always exist on the electrode surface of gold-vacuum-gold junctions fabricated using the mechanically controllable break junction (MCBJ) method. The transition voltage of these gold-vacuum-gold junctions with atomically sharp electrodes is determined by the local density of states (LDOS) of the apex gold atom on the electrode surface rather than by the vacuum barrier shape. More specifically, the absolute value of the transition voltage roughly equals the rising edge of the LDOS peak contributed by the 6p atomic orbitals of the gold atoms protruding from the electrode surface, whose local Fermi level is shifted downwards when a bias voltage is applied. Since the LDOS of the apex gold atom depends strongly on the exact shape of the electrode, the transition voltage is sensitive to the variation of the atomic configuration of the junction. For asymmetric junctions, the transition voltage may also change significantly depending on the bias polarity. Considering that the occurrence of the transition voltage requires the electrode distance to be larger than a critical value, the interaction between the two electrodes is actually rather weak. Consequently, the LDOS of the apex gold atom is mainly determined by its local atomic configuration and the transition voltage only depends weakly on the electrode distance as observed in the MCBJ experiments. © 2013 IOP Publishing Ltd.

Simulation and fabrication of SiO{sub 2}/graded-index TiO{sub 2} antireflection coating for triple-junction GaAs solar cells by using the hybrid deposition process

Energy Technology Data Exchange (ETDEWEB)

Liu, Jheng-Jie; Ho, Wen-Jeng, E-mail: wjho@ntut.edu.tw; Lee, Yi-Yu; Chang, Chia-Ming

2014-11-03

GaAs-based multi-junction solar cells (MJ-SCs) provide a wide solar-energy absorption-band (300–1800 nm), but designing and fabricating a broadband antireflection coating (ARC) are challenging. Because MJ-SCs are typically in a series that connects each subcell, the total output current is limited by the subcell that generates the smallest photocurrent. Thus, the ARC for MJ-SCs must be designed not only to obtain broadband absorption but also to minimize light reflection at the wavelength band of the current-limited cell. This study proposes a broadband SiO{sub 2}/graded-index TiO{sub 2} ARC for improving the current-limited subcell performance by using a hybrid deposition (e-beam evaporation and spin-on coating). A bottom TiO{sub 2} layer and a top SiO{sub 2} layer were deposited through e-beam evaporation, but the middle TiO{sub 2} layer was deposited using spin-on coating because the refractive index values of the TiO{sub 2} films could be tuned by applying the spin speed. Therefore, the graded-index TiO{sub 2} layers were easily obtained using a hybrid deposition method. In addition, a suitable reflectance spectrum of an ARC structure for a middle-cell current-limited triple-junction (3-J) GaAs solar cell was simulated using commercial optical software. The photovoltaic current–voltage and external quantum efficiency (EQE) were measured and compared. The resulting improvements of a short-circuit current of 32.4% and conversion efficiency of 31.8% were attributed to an enhanced EQE of 32.97% as well as a low broadband reflectance exhibited on the middle cell of the 3-J GaAs solar cell with a SiO{sub 2}/graded-index TiO{sub 2} ARC. - Highlights: • A broadband SiO{sub 2}/graded-index TiO{sub 2} ARC obtained by a hybrid deposition • A suitable triple-layer ARC was simulated by a commercial optical software. • Optical reflection, photovoltaic I–V, and EQE of 3-J GaAs solar cell were characterized. • An increased J{sub sc} of 32.4% and an increased �

Molecular dynamics simulation of self-diffusion processes in titanium in bulk material, on grain junctions and on surface.

Science.gov (United States)

Sushko, Gennady B; Verkhovtsev, Alexey V; Yakubovich, Alexander V; Schramm, Stefan; Solov'yov, Andrey V

2014-08-21

The process of self-diffusion of titanium atoms in a bulk material, on grain junctions and on surface is explored numerically in a broad temperature range by means of classical molecular dynamics simulation. The analysis is carried out for a nanoscale cylindrical sample consisting of three adjacent sectors and various junctions between nanocrystals. The calculated diffusion coefficient varies by several orders of magnitude for different regions of the sample. The calculated values of the bulk diffusion coefficient correspond reasonably well to the experimental data obtained for solid and molten states of titanium. Investigation of diffusion in the nanocrystalline titanium is of a significant importance because of its numerous technological applications. This paper aims to reduce the lack of data on diffusion in titanium and describe the processes occurring in bulk, at different interfaces and on surface of the crystalline titanium.

Single-molecule detection of dihydroazulene photo-thermal reaction using break junction technique

Science.gov (United States)

Huang, Cancan; Jevric, Martyn; Borges, Anders; Olsen, Stine T.; Hamill, Joseph M.; Zheng, Jue-Ting; Yang, Yang; Rudnev, Alexander; Baghernejad, Masoud; Broekmann, Peter; Petersen, Anne Ugleholdt; Wandlowski, Thomas; Mikkelsen, Kurt V.; Solomon, Gemma C.; Brøndsted Nielsen, Mogens; Hong, Wenjing

2017-05-01

Charge transport by tunnelling is one of the most ubiquitous elementary processes in nature. Small structural changes in a molecular junction can lead to significant difference in the single-molecule electronic properties, offering a tremendous opportunity to examine a reaction on the single-molecule scale by monitoring the conductance changes. Here, we explore the potential of the single-molecule break junction technique in the detection of photo-thermal reaction processes of a photochromic dihydroazulene/vinylheptafulvene system. Statistical analysis of the break junction experiments provides a quantitative approach for probing the reaction kinetics and reversibility, including the occurrence of isomerization during the reaction. The product ratios observed when switching the system in the junction does not follow those observed in solution studies (both experiment and theory), suggesting that the junction environment was perturbing the process significantly. This study opens the possibility of using nano-structured environments like molecular junctions to tailor product ratios in chemical reactions.

Mono-domain YBa2Cu3Oy superconductor fabrics prepared by an infiltration process

International Nuclear Information System (INIS)

Sudhakar Reddy, E.; Noudem, J.G.; Tarka, M.; Schmitz, G.J.

2000-01-01

A novel process for the fabrication of a new form of YBa 2 Cu 3 O y (123) superconducting material, with the dimensions of a thick film and the microstructure of a melt-textured single-domain bulk is described. The process allows the fabrication of 123 as a self-supporting fabric or as a thick film on various substrate materials. The process, which is generic and economical, uses commercially available Y 2 O 3 fabrics as a precursor material. The Y 2 O 3 cloth is infiltrated with barium cuprates and copper oxides from a liquid-phase source, then converted into Y 2 BaCuO 5 (211) phase and eventually to 123. The nucleation and growth of the 123 phase is controlled by seeding the cloth with an oriented heterogeneous MgO or Nd123 seed. Interesting application areas for the new form of the 123 mono-domain fabric are discussed. (author)

Manufacturing P-N junctions in germanium bodies

International Nuclear Information System (INIS)

Hall, R.N.

1980-01-01

A method of producing p-n junctions in Ge so as to facilitate their use as radiation detectors involves forming a body of high purity p-type germanium, diffusing lithium deep into the body, in the absence of electrolytic processes, to form a junction between n-type and p-type germanium greater than 1 mm depth. (UK)

On simulation of local fluxes in molecular junctions

Science.gov (United States)

Cabra, Gabriel; Jensen, Anders; Galperin, Michael

2018-05-01

We present a pedagogical review of the current density simulation in molecular junction models indicating its advantages and deficiencies in analysis of local junction transport characteristics. In particular, we argue that current density is a universal tool which provides more information than traditionally simulated bond currents, especially when discussing inelastic processes. However, current density simulations are sensitive to the choice of basis and electronic structure method. We note that while discussing the local current conservation in junctions, one has to account for the source term caused by the open character of the system and intra-molecular interactions. Our considerations are illustrated with numerical simulations of a benzenedithiol molecular junction.

The road to magnesium diboride thin films, Josephson junctions and SQUIDs

International Nuclear Information System (INIS)

Brinkman, Alexander; Mijatovic, Dragana; Hilgenkamp, Hans; Rijnders, Guus; Oomen, Ingrid; Veldhuis, Dick; Roesthuis, Frank; Rogalla, Horst; Blank, Dave H A

2003-01-01

The remarkably high critical temperature at which magnesium diboride (MgB 2 ) undergoes transition to the superconducting state, T c ∼ 40 K, has aroused great interest and has encouraged many groups to explore the properties and application potential of this novel superconductor. For many electronic applications and further basic studies, the availability of superconducting thin films is of great importance. Several groups have succeeded in fabricating superconducting MgB 2 films. An overview of the deposition techniques for MgB 2 thin film growth will be given, with a special focus on the in situ two-step process. Although, meanwhile, many problems to obtain suitable films have been solved, such as oxygen impurities and magnesium volatility, the question of how single-phase epitaxial films can be grown still remains. The possibility of growing single-crystalline epitaxial films will be discussed from the deposition conditions' point of view as well as substrate choice. Necessary conditions are discussed and possible routes are reviewed. The applicability of MgB 2 in superconducting electronic devices depends on the possibility of making well-controlled, i.e., reproducible and stable, Josephson junctions. The first attempts to make MgB 2 -MgO-MgB 2 ramp-type junctions and SQUIDs from MgB 2 nanobridges are discussed

Effect of solar-cell junction geometry on open-circuit voltage

Science.gov (United States)

Weizer, V. G.; Godlewski, M. P.

1985-01-01

Simple analytical models have been found that adequately describe the voltage behavior of both the stripe junction and dot junction grating cells as a function of junction area. While the voltage in the former case is found to be insensitive to junction area reduction, significant voltage increases are shown to be possible for the dot junction cell. With regard to cells in which the junction area has been increased in a quest for better performance, it was found that (1) texturation does not affect the average saturation current density J0, indicating that the texturation process is equivalent to a simple extension of junction area by a factor of square root of 3 and (2) the vertical junction cell geometry produces a sizable decrease in J0 that, unfortunately, is more than offset by the effects of attendant areal increases.

Novel magnetic wire fabrication process by way of nanoimprint lithography for current induced magnetization switching

Directory of Open Access Journals (Sweden)

Tsukasa Asari

2017-05-01

Full Text Available Nanoimprint lithography (NIL is an effective method to fabricate nanowire because it does not need expensive systems and this process is easier than conventional processes. In this letter, we report the Current Induced Magnetization Switching (CIMS in perpendicularly magnetized Tb-Co alloy nanowire fabricated by NIL. The CIMS in Tb-Co alloy wire was observed by using current pulse under in-plane external magnetic field (HL. We successfully observed the CIMS in Tb-Co wire fabricated by NIL. Additionally, we found that the critical current density (Jc for the CIMS in the Tb-Co wire fabricated by NIL is 4 times smaller than that fabricated by conventional lift-off process under HL = 200Oe. These results indicate that the NIL is effective method for the CIMS.

Scalable, Economical Fabrication Processes for Ultra-Compact Warm-White LEDs

Energy Technology Data Exchange (ETDEWEB)

Lowes, Ted [Cree, Inc., Durham, NC (United States)

2016-01-31

Conventional warm-white LED component fabrication consists of a large number of sequential steps which are required to incorporate electrical, mechanical, and optical functionality into the component. Each of these steps presents cost and yield challenges which multiply throughout the entire process. Although there has been significant progress in LED fabrication over the last decade, significant advances are needed to enable further reductions in cost per lumen while not sacrificing efficacy or color quality. Cree conducted a focused 18-month program to develop a new low-cost, high-efficiency light emitting diode (LED) architecture enabled by novel large-area parallel processing technologies, reduced number of fabrication steps, and minimized raw materials use. This new scheme is expected to enable ultra-compact LED components exhibiting simultaneously high efficacy and high color quality. By the end of the program, Cree fabricated warm-white LEDs with a room-temperature “instant on” efficacy of >135 lm/W at ~3500K and 90 CRI (when driven at the DOE baseline current density of 35 A/cm2). Cree modified the conventional LED fabrication process flow in a manner that is expected to translate into simultaneously high throughput and yield for ultra-compact packages. Building on its deep expertise in LED wafer fabrication, Cree developed these ultra-compact LEDs to have no compromises in color quality or efficacy compared to their conventional counterparts. Despite their very small size, the LEDs will also be robustly electrically integrated into luminaire systems with the same attach yield as conventional packages. The versatility of the prototype high-efficacy LED architecture will likely benefit solid-state lighting (SSL) luminaire platforms ranging from bulbs to troffers. We anticipate that the prototype LEDs will particularly benefit luminaires with large numbers of distributed compact packages, such as linear and area luminaires (e.g. troffers). The fraction of

Use of p- and n-type vapor phase doping and sub-melt laser anneal for extension junctions in sub-32 nm CMOS technology

Energy Technology Data Exchange (ETDEWEB)

Nguyen, N.D., E-mail: Duy.Nguyen@imec.b [IMEC, Kapeldreef 75, B-3001 Leuven (Belgium); Rosseel, E. [IMEC, Kapeldreef 75, B-3001 Leuven (Belgium); Takeuchi, S. [IMEC, Kapeldreef 75, B-3001 Leuven (Belgium); Department of Physics and Astronomy, KU Leuven, B-3001 Leuven (Belgium); Everaert, J.-L. [IMEC, Kapeldreef 75, B-3001 Leuven (Belgium); Yang, L. [IMEC, Kapeldreef 75, B-3001 Leuven (Belgium); Department of Chemistry and INPAC Institute, KU Leuven, B-3001 Leuven (Belgium); Goossens, J.; Moussa, A.; Clarysse, T.; Richard, O.; Bender, H. [IMEC, Kapeldreef 75, B-3001 Leuven (Belgium); Zaima, S. [Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Nagoya, 464-8603 (Japan); Sakai, A. [Department of System Innovation, Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-cho, Toyonaka, Osaka 560-8531 (Japan); Loo, R. [IMEC, Kapeldreef 75, B-3001 Leuven (Belgium); Lin, J.C. [TSMC, R and D, 8, Li-Hsin 6th Rd., Hsinchu Science-Based Park, Hsinchu, Taiwan (China); TSMC assignee at IMEC, Kapeldreef 75, B-3001 Leuven (Belgium); Vandervorst, W. [IMEC, Kapeldreef 75, B-3001 Leuven (Belgium); Instituut voor Kern- en Stralingsfysika - IKS, KU Leuven, B-3001 Leuven (Belgium); Caymax, M. [IMEC, Kapeldreef 75, B-3001 Leuven (Belgium)

2010-01-01

We evaluated the combination of vapor phase doping and sub-melt laser anneal as a novel doping strategy for the fabrication of source and drain extension junctions in sub-32 nm CMOS technology, aiming at both planar and non-planar device applications. High quality ultra shallow junctions with abrupt profiles in Si substrates were demonstrated on 300 mm Si substrates. The excellent results obtained for the sheet resistance and the junction depth with boron allowed us to fulfill the requirements for the 32 nm as well as for the 22 nm technology nodes in the PMOS case by choosing appropriate laser anneal conditions. For instance, using 3 laser scans at 1300 {sup o}C, we measured an active dopant concentration of about 2.1 x 10{sup 20} cm{sup -} {sup 3} and a junction depth of 12 nm. With arsenic for NMOS, ultra shallow junctions were achieved as well. However, as also seen for other junction fabrication schemes, low dopant activation level and active dose (in the range of 1-4 x 10{sup 13} cm{sup -} {sup 2}) were observed although dopant concentration versus depth profiles indicate that the dopant atoms were properly driven into the substrate during the anneal step. The electrical deactivation of a large part of the in-diffused dopants was responsible for the high sheet resistance values.

Use of p- and n-type vapor phase doping and sub-melt laser anneal for extension junctions in sub-32 nm CMOS technology

International Nuclear Information System (INIS)

Nguyen, N.D.; Rosseel, E.; Takeuchi, S.; Everaert, J.-L.; Yang, L.; Goossens, J.; Moussa, A.; Clarysse, T.; Richard, O.; Bender, H.; Zaima, S.; Sakai, A.; Loo, R.; Lin, J.C.; Vandervorst, W.; Caymax, M.

2010-01-01

We evaluated the combination of vapor phase doping and sub-melt laser anneal as a novel doping strategy for the fabrication of source and drain extension junctions in sub-32 nm CMOS technology, aiming at both planar and non-planar device applications. High quality ultra shallow junctions with abrupt profiles in Si substrates were demonstrated on 300 mm Si substrates. The excellent results obtained for the sheet resistance and the junction depth with boron allowed us to fulfill the requirements for the 32 nm as well as for the 22 nm technology nodes in the PMOS case by choosing appropriate laser anneal conditions. For instance, using 3 laser scans at 1300 o C, we measured an active dopant concentration of about 2.1 x 10 20 cm - 3 and a junction depth of 12 nm. With arsenic for NMOS, ultra shallow junctions were achieved as well. However, as also seen for other junction fabrication schemes, low dopant activation level and active dose (in the range of 1-4 x 10 13 cm - 2 ) were observed although dopant concentration versus depth profiles indicate that the dopant atoms were properly driven into the substrate during the anneal step. The electrical deactivation of a large part of the in-diffused dopants was responsible for the high sheet resistance values.

Comparison of silicon pin diode detector fabrication processes using ion implantation and thermal doping

International Nuclear Information System (INIS)

Zhou, C.Z.; Warburton, W.K.

1996-01-01

Two processes for the fabrication of silicon p-i-n diode radiation detectors are described and compared. Both processes are compatible with conventional integrated-circuit fabrication techniques and yield very low leakage currents. Devices made from the process using boron thermal doping have about a factor of 2 lower leakage current than those using boron ion implantation. However, the boron thermal doping process requires additional process steps to remove boron skins. (orig.)

Negative differential resistance observed from vertical p+-n+ junction device with two-dimensional black phosphorous

Science.gov (United States)

Lee, Daeyeong; Jang, Young Dae; Kweon, Jaehwan; Ryu, Jungjin; Hwang, Euyheon; Yoo, Won Jong; Samsung-SKKU Graphene/2D Center (SSGC) Collaboration

A vertical p+-n+ homojunction was fabricated by using black phosphorus (BP) as a van der Waals two-dimensional (2D) material. The top and bottom layers of the materials were doped by chemical dopants of gold chloride (AuCl3) for p-type doping and benzyl viologen (BV) for n-type doping. The negative differential resistance (NDR) effect was clearly observed from the output curves of the fabricated BP vertical devices. The thickness range of the 2D material showing NDR and the peak to valley current ratio of NDR are found to be strongly dependent on doping condition, gate voltage, and BP's degradation level. Furthermore, the carrier transport of the p+-n+ junction was simulated by using density functional theory (DFT) and non-equilibrium Green's function (NEGF). Both the experimental and simulation results confirmed that the NDR is attributed to the band-to-band tunneling (BTBT) across the 2D BP p+-n+ junction, and further quantitative details on the carrier transport in the vertical p+-n+ junction devices were explored, according to the analyses of the measured transfer curves and the DFT simulation results. This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MEST) (2013R1A2A2A01015516).

Process research of non-Czochralski silicon material

Science.gov (United States)

Campbell, R. B.

1986-01-01

Simultaneous diffusion of liquid precursors containing phosphorus and boron into dendritic web silicon to form solar cell structures was investigated. A simultaneous junction formation techniques was developed. It was determined that to produce high quality cells, an annealing cycle (nominal 800 C for 30 min) should follow the diffusion process to anneal quenched-in defects. Two ohm-cm n-base cells were fabricated with efficiencies greater than 15%. A cost analysis indicated that the simultansous diffusion process costs can be as low as 65% of the costs of the sequential diffusion process.

Chemically etched edges of YBa2Cu3O7 films for interconnects, crossovers and Josephson junctions

International Nuclear Information System (INIS)

Poppe, U.; Faley, M.I.; Urban, K.; Soltner, H.

1993-01-01

To produce damage-free edges is one of the main problems during the preparation of Josephson edge-type junctions and interconnects in multilayer structures including high temperature superconductors. The inherently short and anisotropic coherence length in high temperature superconductors makes it also difficult to fabricate Josephson junctions from these materials. One promising technique which helps to overcome such problems using a nonaqueous chemical etching with a Br-ethanol solution was first presented in a recent publication. Here we report results obtained with the use of this method: test of insulation properties of PrBa 2 Cu 3 O 7 , PrBa 2 Cu 2.85 Ga 0.15 O 7 , and SrTiO 3 used for crossovers and Josephson junctions. Some features of interconnects and Josephson junctions, prepared on the basis of the chemical technique are also discussed. (orig.)

Poster - Thur Eve - 57: Craniospinal irradiation with jagged-junction IMRT approach without beam edge matching for field junctions.

Science.gov (United States)

Cao, F; Ramaseshan, R; Corns, R; Harrop, S; Nuraney, N; Steiner, P; Aldridge, S; Liu, M; Carolan, H; Agranovich, A; Karva, A

2012-07-01

Craniospinal irradiation were traditionally treated the central nervous system using two or three adjacent field sets. A intensity-modulated radiotherapy (IMRT) plan (Jagged-Junction IMRT) which overcomes problems associated with field junctions and beam edge matching, improves planning and treatment setup efficiencies with homogenous target dose distribution was developed. Jagged-Junction IMRT was retrospectively planned on three patients with prescription of 36 Gy in 20 fractions and compared to conventional treatment plans. Planning target volume (PTV) included the whole brain and spinal canal to the S3 vertebral level. The plan employed three field sets, each with a unique isocentre. One field set with seven fields treated the cranium. Two field sets treated the spine, each set using three fields. Fields from adjacent sets were overlapped and the optimization process smoothly integrated the dose inside the overlapped junction. For the Jagged-Junction IMRT plans vs conventional technique, average homogeneity index equaled 0.08±0.01 vs 0.12±0.02, and conformity number equaled 0.79±0.01 vs 0.47±0.12. The 95% isodose surface covered (99.5±0.3)% of the PTV vs (98.1±2.0)%. Both Jagged-Junction IMRT plans and the conventional plans had good sparing of the organs at risk. Jagged-Junction IMRT planning provided good dose homogeneity and conformity to the target while maintaining a low dose to the organs at risk. Jagged-Junction IMRT optimization smoothly distributed dose in the junction between field sets. Since there was no beam matching, this treatment technique is less likely to produce hot or cold spots at the junction in contrast to conventional techniques. © 2012 American Association of Physicists in Medicine.

Back-contacted back-junction silicon solar cells

Energy Technology Data Exchange (ETDEWEB)

Mangersnes, Krister

2010-10-15

Conventional silicon solar cells have a front-side contacted emitter. Back-contacted back-junction (BC-BJ) silicon solar cells, on the other hand, have both the complete metallization and the active diffused regions of both polarities on the backside. World-record efficiencies have already been demonstrated for this type of cell design in production, both on cell and module level. However, the production of these cells is both complex and costly, and a further cost reduction in fabrication is needed to make electricity from BC-BJ silicon solar cells cost-competitive with electricity on the grid ('grid-parity'). During the work with this thesis, we have investigated several important issues regarding BC-BJ silicon solar cells. The aim has been to reduce production cost and complexity while at the same time maintaining, or increasing, the already high conversion efficiencies demonstrated elsewhere. This has been pursued through experimental work as well as through numerical simulations and modeling. Six papers are appended to this thesis, two of which are still under review in scientific journals. In addition, two patents have been filed based on the work presented herein. Experimentally, we have focused on investigating and optimizing single, central processing steps. A laser has been the key processing tool during most of the work. We have used the same laser both to structure the backside of the cell and to make holes in a double-layer of passivating amorphous silicon and silicon oxide, where the holes were opened with the aim of making local contact to the underlying silicon. The processes developed have the possibility of using a relatively cheap and industrially proven laser and obtain results better than most state-of-the-art laser technologies. During the work with the laser, we also developed a thermodynamic model that was able to predict the outcome from laser interaction with amorphous and crystalline silicon. Alongside the experimental work, we

Fabrication of metal-matrix composites and adaptive composites using ultrasonic consolidation process

International Nuclear Information System (INIS)

Kong, C.Y.; Soar, R.C.

2005-01-01

Ultrasonic consolidation (UC) has been used to embed thermally sensitive and damage intolerant fibres within aluminium matrix structures using high frequency, low amplitude, mechanical vibrations. The UC process can induce plastic flow in the metal foils being bonded, to allow the embedding of fibres at typically 25% of the melting temperature of the base metal and at a fraction of the clamping force when compared to fusion processes. To date, the UC process has successfully embedded Sigma silicon carbide (SiC) fibres, shape memory alloy wires and optical fibres, which are presented in this paper. The eventual aim of this research is targeted at the fabrication of adaptive composite structures having the ability to measure external stimuli and respond by adapting their structure accordingly, through the action of embedded active and passive functional fibres within a freeform fabricated metal-matrix structure. This paper presents the fundamental studies of this research to identify embedding methods and working range for the fabrication of adaptive composite structures. The methods considered have produced embedded fibre specimens in which large amounts of plastic flow have been observed, within the matrix, as it is deformed around the fibres, resulting in fully consolidated specimens without damage to the fibres. The microscopic observation techniques and macroscopic functionality tests confirms that the UC process could be applied to the fabrication of metal-matrix composites and adaptive composites, where fusion techniques are not feasible and where a 'cold' process is necessary

Glial processes at the Drosophila larval neuromuscular junction match synaptic growth.

Directory of Open Access Journals (Sweden)

Deidre L Brink

Full Text Available Glia are integral participants in synaptic physiology, remodeling and maturation from blowflies to humans, yet how glial structure is coordinated with synaptic growth is unknown. To investigate the dynamics of glial development at the Drosophila larval neuromuscular junction (NMJ, we developed a live imaging system to establish the relationship between glia, neuronal boutons, and the muscle subsynaptic reticulum. Using this system we observed processes from two classes of peripheral glia present at the NMJ. Processes from the subperineurial glia formed a blood-nerve barrier around the axon proximal to the first bouton. Processes from the perineurial glial extended beyond the end of the blood-nerve barrier into the NMJ where they contacted synapses and extended across non-synaptic muscle. Growth of the glial processes was coordinated with NMJ growth and synaptic activity. Increasing synaptic size through elevated temperature or the highwire mutation increased the extent of glial processes at the NMJ and conversely blocking synaptic activity and size decreased the presence and size of glial processes. We found that elevated temperature was required during embryogenesis in order to increase glial expansion at the nmj. Therefore, in our live imaging system, glial processes at the NMJ are likely indirectly regulated by synaptic changes to ensure the coordinated growth of all components of the tripartite larval NMJ.

Field emission current from a junction field-effect transistor

International Nuclear Information System (INIS)

Monshipouri, Mahta; Abdi, Yaser

2015-01-01

Fabrication of a titanium dioxide/carbon nanotube (TiO 2 /CNT)-based transistor is reported. The transistor can be considered as a combination of a field emission transistor and a junction field-effect transistor. Using direct current plasma-enhanced chemical vapor deposition (DC-PECVD) technique, CNTs were grown on a p-typed (100)-oriented silicon substrate. The CNTs were then covered by TiO 2 nanoparticles 2–5 nm in size, using an atmospheric pressure CVD technique. In this device, TiO 2 /CNT junction is responsible for controlling the emission current. High on/off-current ratio and proper gate control are the most important advantages of device. A model based on Fowler–Nordheim equation is utilized for calculation of the emission current and the results are compared with experimental data. The effect of TiO 2 /CNT hetero-structure is also investigated, and well modeled

Fabrication of TiO{sub 2} hierarchical architecture assembled by nanowires with anatase/TiO{sub 2}(B) phase-junctions for efficient photocatalytic hydrogen production

Energy Technology Data Exchange (ETDEWEB)

Qiu, Yong; Ouyang, Feng, E-mail: ouyangfh@hit.edu.cn

2017-05-01

Highlights: • H-titanate nanowires hierarchical architectures (TNH) were prepared by a hydrothermal method. • Calcinations of TNH leads to the formation of anatase/TiO{sub 2}(B) phase-junctions. • The hierarchical architecture offered enhanced light harvesting and large specific surface area. • The 1D nanowires and anatase/TiO{sub 2}(B) phase-junctions both can enhance the separation of photoinduced electron-hole. • The products calcined at the optimum conditions (450 °C) exhibited a maximum hydrogenproduction rate of 7808 μmol g{sup −1} h{sup −1}. - Abstract: TiO{sub 2} hierarchical architecture assembled by nanowires with anatase/TiO{sub 2}(B) phase-junctions was prepared by a hydrothermal process followed by calcinations. The optimum calcination treatment (450 °C) not only led to the formation of anatase/TiO{sub 2}(B) phase-junctions, but also kept the morphology of 1D nanowire and hierarchical architecture well. The T-450 load 0.5 wt% Pt cocatalysts showed the best photocatalytic hydrogen production activity, with a maximum hydrogen production rate of 7808 μmol g{sup −1} h{sup −1}. The high photocatalytic activity is ascribed to the combined effects of the following three factors: (1) the hierarchical architecture exhibits better light harvesting; (2) the larger specific surface area provides more surface active sites for the photocatalytic reaction; (3) the 1D nanowires and anatase/TiO{sub 2}(B) phase-junctions both can enhance the separation of photoinduced electron-hole pairs and inhibit their recombination.

Key Processes of Silicon-On-Glass MEMS Fabrication Technology for Gyroscope Application.

Science.gov (United States)

Ma, Zhibo; Wang, Yinan; Shen, Qiang; Zhang, Han; Guo, Xuetao

2018-04-17

MEMS fabrication that is based on the silicon-on-glass (SOG) process requires many steps, including patterning, anodic bonding, deep reactive ion etching (DRIE), and chemical mechanical polishing (CMP). The effects of the process parameters of CMP and DRIE are investigated in this study. The process parameters of CMP, such as abrasive size, load pressure, and pH value of SF1 solution are examined to optimize the total thickness variation in the structure and the surface quality. The ratio of etching and passivation cycle time and the process pressure are also adjusted to achieve satisfactory performance during DRIE. The process is optimized to avoid neither the notching nor lag effects on the fabricated silicon structures. For demonstrating the capability of the modified CMP and DRIE processes, a z-axis micro gyroscope is fabricated that is based on the SOG process. Initial test results show that the average surface roughness of silicon is below 1.13 nm and the thickness of the silicon is measured to be 50 μm. All of the structures are well defined without the footing effect by the use of the modified DRIE process. The initial performance test results of the resonant frequency for the drive and sense modes are 4.048 and 4.076 kHz, respectively. The demands for this kind of SOG MEMS device can be fulfilled using the optimized process.

Study of the degradation of the breakdown voltage of a super-junction power MOSFET due to charge imbalance

International Nuclear Information System (INIS)

Kondekar, Pravin N.; Oh, Hwan-Sool; Kim, Young-Beom

2006-01-01

In this research, we analytically designed a super-junction (SJ) structure and used a simulation tool to study its off-state charge imbalance behavior. In the case of a SJ MOSFET (CoolMOS TM ), designed for the lowest specific on- resistance R on , the MOS part of the transistor (channel region) affected the symmetry, creating a charge imbalance; in addition to this, the imbalance in the SJ drift layer, which was inherently due to limitations in the fabrication process was simulated by varying the doping density of the pillars up to 10 %. The underlying physical mechanisms responsible for the reduction of the breakdown voltage (BV) were investigated in detail by using the electric field profiles and potential contours. The effect of varying the junction depth of a p-body/well and the cell pitch on the breakdown voltage was also analyzed. The trade off between BV sensitivity and specific R on was also investigated.

Impact of semiconducting electrodes on the electroresistance of ferroelectric tunnel junctions

Science.gov (United States)

Asa, M.; Bertacco, R.

2018-02-01

Ferroelectric tunnel junctions are promising candidates for the realization of energy-efficient digital memories and analog memcomputing devices. In this work, we investigate the impact of a semiconducting layer in series to the junction on the sign of electroresistance. To this scope, we compare tunnel junctions fabricated out of Pt/BaTiO3/La1/3Sr2/3MnO3 (LSMO) and Pt/BaTiO3/Nb:SrTiO3 (Nb:STO) heterostructures, displaying an opposite sign of the electroresistance. By capacitance-voltage profiling, we observe a behavior typical of Metal-Oxide-Semiconductor tunnel devices in both cases but compatible with the opposite sign of charge carriers in the semiconducting layer. While Nb:STO displays the expected n-type semiconducting character, metallic LSMO develops an interfacial p-type semiconducting layer. The different types of carriers at the semiconducting interfaces and the modulation of the depleted region by the ferroelectric charge have a deep impact on electroresistance, possibly accounting for the different sign observed in the two systems.

Ferroelectric tunnel junctions with multi-quantum well structures

Energy Technology Data Exchange (ETDEWEB)

Ma, Zhijun; Zhang, Tianjin, E-mail: zhangtj@hubu.edu.cn [Ministry of Education Key Laboratory for the Green Preparation and Application of Functional Materials, Hubei University, Wuhan 430062 (China); Hubei Collaborative Innovation Center for Advanced Organic Chemical Materials, Hubei University, Wuhan 430062 (China); Liang, Kun; Qi, Yajun; Wang, Duofa; Wang, Jinzhao; Jiang, Juan [Hubei Collaborative Innovation Center for Advanced Organic Chemical Materials, Hubei University, Wuhan 430062 (China)

2014-06-02

Ferroelectric tunnel junctions (FTJs) with multi-quantum well structures are proposed and the tunneling electroresistance (TER) effect is investigated theoretically. Compared with conventional FTJs with monolayer ferroelectric barriers, FTJs with single-well structures provide TER ratio improvements of one order of magnitude, while FTJs with optimized multi-well structures can enhance this improvement by another order of magnitude. It is believed that the increased resonant tunneling strength combined with appropriate asymmetry in these FTJs contributes to the improvement. These studies may help to fabricate FTJs with large TER ratio experimentally and put them into practice.

Aspects for selection of materials and fabrication processes for nuclear component manufacturing

International Nuclear Information System (INIS)

Pernstich, K.

1980-01-01

For components of the Nuclear steam supply System of Light Water Reactors an extremely high safety standard is required. These requirements only can be met by adequate selection of materials and fabrication processes and their proper application in combination with strict quality assurance and control measurements. A general overview of the basic aspects to be considered in this connection is presented together with an indication of the present state of art for the main materials and fabrication processes. (author) [pt

Fabrication of flexible thermoelectric microcoolers using planar thin-film technologies

OpenAIRE

Gonçalves, L. M.; Rocha, J. G.; Couto, Carlos; Alpuim, P.; Min, Gao; Rowe, D. M.; Correia, J. H.

2007-01-01

The present work reports on the fabrication and characterization of a planar Peltier cooler on a flexible substrate. The device was fabricated on a 12 νm thick Kapton(c) polyimide substrate using Bi2Te3 and Sb2Te3 thermoelectric elements deposited by thermal co-evaporation. The cold area of the device is cooled with four thermoelectric junctions, connected in series using metal contacts. Plastic substrates add uncommon mechanical properties to the composite film-substrate and enable integrati...

Schottky junctions on perovskite single crystals: light-modulated dielectric constant and self-biased photodetection

KAUST Repository

Shaikh, Parvez Abdul Ajij

2016-08-16

Schottky junctions formed between semiconductors and metal contacts are ubiquitous in modern electronic and optoelectronic devices. Here we report on the physical properties of Schottky-junctions formed on hybrid perovskite CH3NH3PbBr3 single crystals. It is found that light illumination can significantly increase the dielectric constant of perovskite junctions by 2300%. Furthermore, such Pt/perovskite junctions are used to fabricate self-biased photodetectors. A photodetectivity of 1.4 × 1010 Jones is obtained at zero bias, which increases to 7.1 × 1011 Jones at a bias of +3 V, and the photodetectivity remains almost constant in a wide range of light intensity. These devices also exhibit fast responses with a rising time of 70 μs and a falling time of 150 μs. As a result of the high crystal quality and low defect density, such single-crystal photodetectors show stable performance after storage in air for over 45 days. Our results suggest that hybrid perovskite single crystals provide a new platform to develop promising optoelectronic applications. © 2016 The Royal Society of Chemistry.

Fabrication of Spin-Transfer Nano-Oscillator by Colloidal Lithography

Directory of Open Access Journals (Sweden)

Bin Fang

2015-01-01

Full Text Available We fabricate nanoscale spin-transfer oscillators (STOs by utilizing colloidal nanoparticles as a lithographic mask. By this approach, high quality STO devices can be fabricated, and as an example the fabricated STO devices using MgO magnetic tunnel junction as the basic cell exhibit current-induced microwave emission with a large frequency tunability of 0.22 GHz/mA. Compared to the conventional approaches that involve a step of defining nanoscale elements by means of electron beam lithography, which is not readily available for many groups, our strategy for STO fabrication does not require the sophisticated equipment (~ million dollars per unit and expensive lithography resist, while being cost-effective and easy to use in laboratory level. This will accelerate efforts to implement STO into on-chip integrated high-radio frequency applications.

Infra-red process for colour fixation on fabrics

International Nuclear Information System (INIS)

Raymond, D.J.; Biau, D.

1983-01-01

Infra-red radiations find wide application in industrial processes as heating, drying, stoving and forming. The results are often far better than those from the other techniques: convection oven, gas IR etc ... They come from the electric IR specific advantages: energy direct transmission, emitter and product spectral coupling, possible selectivity. That is the case in the Textile Industry, where experiments showed that infra-red process heating could be efficient for colour fixation on fabrics. Shorter production cycles and energy saving are the main results

Single molecule dynamics at a mechanically controllable break junction in solution at room temperature.

Science.gov (United States)

Konishi, Tatsuya; Kiguchi, Manabu; Takase, Mai; Nagasawa, Fumika; Nabika, Hideki; Ikeda, Katsuyoshi; Uosaki, Kohei; Ueno, Kosei; Misawa, Hiroaki; Murakoshi, Kei

2013-01-23

The in situ observation of geometrical and electronic structural dynamics of a single molecule junction is critically important in order to further progress in molecular electronics. Observations of single molecular junctions are difficult, however, because of sensitivity limits. Here, we report surface-enhanced Raman scattering (SERS) of a single 4,4'-bipyridine molecule under conditions of in situ current flow in a nanogap, by using nano-fabricated, mechanically controllable break junction (MCBJ) electrodes. When adsorbed at room temperature on metal nanoelectrodes in solution to form a single molecule junction, statistical analysis showed that nontotally symmetric b(1) and b(2) modes of 4,4'-bipyridine were strongly enhanced relative to observations of the same modes in solid or aqueous solutions. Significant changes in SERS intensity, energy (wavenumber), and selectivity of Raman vibrational bands that are coincident with current fluctuations provide information on distinct states of electronic and geometrical structure of the single molecule junction, even under large thermal fluctuations occurring at room temperature. We observed the dynamics of 4,4'-bipyridine motion between vertical and tilting configurations in the Au nanogap via b(1) and b(2) mode switching. A slight increase in the tilting angle of the molecule was also observed by noting the increase in the energies of Raman modes and the decrease in conductance of the molecular junction.

Fabrication of pseudo-spin-MOSFETs using a multi-project wafer CMOS chip

Science.gov (United States)

Nakane, R.; Shuto, Y.; Sukegawa, H.; Wen, Z. C.; Yamamoto, S.; Mitani, S.; Tanaka, M.; Inomata, K.; Sugahara, S.

2014-12-01

We demonstrate monolithic integration of pseudo-spin-MOSFETs (PS-MOSFETs) using vendor-made MOSFETs fabricated in a low-cost multi-project wafer (MPW) product and lab-made magnetic tunnel junctions (MTJs) formed on the topmost passivation film of the MPW chip. The tunneling magnetoresistance (TMR) ratio of the fabricated MTJs strongly depends on the surface roughness of the passivation film. Nevertheless, after the chip surface was atomically flattened by SiO2 deposition on it and successive chemical-mechanical polish (CMP) process for the surface, the fabricated MTJs on the chip exhibits a sufficiently large TMR ratio (>140%) adaptable to the PS-MOSFET application. The implemented PS-MOSFETs show clear modulation of the output current controlled by the magnetization configuration of the MTJs, and a maximum magnetocurrent ratio of 90% is achieved. These magnetocurrent behaviour is quantitatively consistent with those predicted by HSPICE simulations. The developed integration technique using a MPW CMOS chip would also be applied to monolithic integration of CMOS devices/circuits and other various functional devices/materials, which would open the door for exploring CMOS-based new functional hybrid circuits.

Design and Fabrication of 1 × 2 Nanophotonic Switch

Directory of Open Access Journals (Sweden)

Asaf Shahmoon

2010-01-01

Full Text Available We present the design and the fabrication of a novel 1×2 nanophotonic switch. The switch is a photonic T-junction in which a gold nano particle is being positioned in the junction using the tip of an atomic force microscope (AFM. The novelty of this 1×2 switch is related to its ability to control the direction of wave that propagates along a photonic structure. The selectivity of the direction is determined by a gold nanoparticle having dimension of a few tens of nanometer. This particle can be shifted. The shift of the gold nano particle can be achieved by applying voltage or by illuminating it with a light source. The shifts of the particle, inside the air gap, direct the input beam ones to the left output of the junction and once to its right output. Three types of simulations have been done in order to realize the photonic T-junction, and they are as follows: photonic crystal structures, waveguide made out of PMMA, and a silicon waveguide.

Insulator-protected mechanically controlled break junctions for measuring single-molecule conductance in aqueous environments

NARCIS (Netherlands)

Muthusubramanian, N.; Galan, E.; Maity, C.; Eelkema, R.; Grozema, F.C.; van der Zant, H.S.J.

2016-01-01

We present a method to fabricate insulated gold mechanically controlled break junctions (MCBJ) by coating the metal with a thin layer of aluminum oxide using plasma enhanced atomic layer deposition. The Al₂O₃ thickness deposited on the MCBJ devices was varied from 2 to 15 nm

Experimental validation of a simple, low-cost, T-junction droplet generator fabricated through 3D printing

Science.gov (United States)

Donvito, Lidia; Galluccio, Laura; Lombardo, Alfio; Morabito, Giacomo; Nicolosi, Alfio; Reno, Marco

2015-03-01

Three-dimensional printing has been recently proposed and assessed for continuous flow microfluidic devices. In this paper the focus is on a new application of this rapid and low cost method for microfluidic device prototyping: droplets production through a T-junction generator. The feasibility of this new methodology is assessed by means of an experimental study in which the statistical parameters which characterize the production of droplets are analyzed. Furthermore, this study assesses the validity of previous theoretical and experimental results, obtained for a PDMS T-junction droplet generator, also in the case of a 3D printed Acrylonitrile microfluidic chip. Finally, the feasibility of producing monodisperse droplets by analyzing the polydispersity index of the prepared droplets is demonstrated.

Metal matrix composite fabrication processes for high performance aerospace structures

Science.gov (United States)

Ponzi, C.

A survey is conducted of extant methods of metal matrix composite (MMC) production in order to serve as a basis for prospective MMC users' selection of a matrix/reinforcement combination, cost-effective primary fabrication methods, and secondary fabrication techniques for the achievement of desired performance levels. Attention is given to the illustrative cases of structural fittings, control-surface connecting rods, hypersonic aircraft air inlet ramps, helicopter swash plates, and turbine rotor disks. Methods for technical and cost analysis modeling useful in process optimization are noted.

A Fully Contained Resin Infusion Process for Fiber-Reinforced Polymer Composite Fabrication and Repair

Science.gov (United States)

2013-01-01

Figures iv  Acknowledgments v  1.  Introduction 1  2.  Experimental 2  2.1  Composite Laminate Fabrication...2 Figure 2. Image of fiberglass composite being fabricated using VARTM processing. 2. Experimental 2.1 Composite Laminate Fabrication...style 5 × 5 plain 5 weave prepreg S-2 fiberglass fabric and a honeycomb core cured in an autoclave, much like the composite parts fielded in

Applications and fabrication processes of superconducting composite materials

International Nuclear Information System (INIS)

Gregory, E.

1984-01-01

This paper discusses the most recent applications and manufacturing considerations in the field of superconductivity. The constantly changing requirements of a growing number of users encourage development in fabrication and inspection techniques. For the first time, superconductors are being used commercially in large numbers and superconducting magnets are no longer just laboratory size. Although current demand for these conductors represents relatively small quantities of material, advances in the production of high-quality composites may accelerate technological growth into several new markets. Three large-scale application areas for superconductors are discussed: accelerator magnets for high-energy physics research, magnetic confinement for thermonuclear fusion, and magnetic resonance imaging for health care. Each application described is accompanied by a brief description of the conductors used and fabrication processes employed to make them

THE DYEING PROCESS OF KNITTED FABRICS AT DIFFERENT TEMPERATURES USING ULTRASOUND

Directory of Open Access Journals (Sweden)

MITIC Jelena

2014-05-01

Full Text Available The dyeing of knitted fabrics made from 100 % cellulose using on-line procedure vinyl sulfonic reactive dye, with or without ultrasound energy, is carried out in this paper. The impact of temperature has been observed. The dye exhaustion is monitored using the method of absorption spectrophotometry, and the quality control of the coloration is monitored using color measurements. The acting of ultrasound on coloration consistency, as well as on some mechanical characteristics has also been examined. All examples of the ultrasound dyeing process show greater dye exhaustion in comparison to the conventional procedure. In addition, all the samples, which have been dyed with the ultrasound energy at 40°C, are significantly darker and have deeper color in comparison with the referent sample. The temperature has a great influence on kinetic energy of the dye molecules, and therefore on the diffusion processes in the dyeing system. The exhaustion chart indicates that when the temperature is lower the exhaustion degree drops. However, all the samples dyed with the ultrasound energy have bigger exhaustion. Besides that, ultrasound energy contributes to warming up the processing environment, so the additional warm up with the electricity is unnecessary, unlike the conventional way of dyeing. Since the reactive dyes chemically connect themselves with the cellulose substrate and in that way form covalent connection, the dyed fabrics have good washing consistency. Analysis results indicate that the consistencies are identical regardless the applied dyeing procedure. In other words, the dyeing method using the ultrasound energy produces the dyed fabric of the same quality. After analyzing the results of breaking force and elongation at break of knitted fabrics, it is noticeable that there is no degradation of previously mentioned knitted fabrics features (horizontally and vertically during the ultrasound wave’s activity.

Coherent Charge Transport in Ballistic InSb Nanowire Josephson Junctions

Science.gov (United States)

Li, S.; Kang, N.; Fan, D. X.; Wang, L. B.; Huang, Y. Q.; Caroff, P.; Xu, H. Q.

2016-01-01

Hybrid InSb nanowire-superconductor devices are promising for investigating Majorana modes and topological quantum computation in solid-state devices. An experimental realisation of ballistic, phase-coherent superconductor-nanowire hybrid devices is a necessary step towards engineering topological superconducting electronics. Here, we report on a low-temperature transport study of Josephson junction devices fabricated from InSb nanowires grown by molecular-beam epitaxy and provide a clear evidence for phase-coherent, ballistic charge transport through the nanowires in the junctions. We demonstrate that our devices show gate-tunable proximity-induced supercurrent and clear signatures of multiple Andreev reflections in the differential conductance, indicating phase-coherent transport within the junctions. We also observe periodic modulations of the critical current that can be associated with the Fabry-Pérot interference in the nanowires in the ballistic transport regime. Our work shows that the InSb nanowires grown by molecular-beam epitaxy are of excellent material quality and hybrid superconducting devices made from these nanowires are highly desirable for investigation of the novel physics in topological states of matter and for applications in topological quantum electronics. PMID:27102689

Interface-Engineered Charge-Transport Properties in Benzenedithiol Molecular Electronic Junctions via Chemically p-Doped Graphene Electrodes.

Science.gov (United States)

Jang, Yeonsik; Kwon, Sung-Joo; Shin, Jaeho; Jeong, Hyunhak; Hwang, Wang-Taek; Kim, Junwoo; Koo, Jeongmin; Ko, Taeg Yeoung; Ryu, Sunmin; Wang, Gunuk; Lee, Tae-Woo; Lee, Takhee

2017-12-06

In this study, we fabricated and characterized vertical molecular junctions consisting of self-assembled monolayers of benzenedithiol (BDT) with a p-doped multilayer graphene electrode. The p-type doping of a graphene film was performed by treating pristine graphene (work function of ∼4.40 eV) with trifluoromethanesulfonic (TFMS) acid, producing a significantly increased work function (∼5.23 eV). The p-doped graphene-electrode molecular junctions statistically showed an order of magnitude higher current density and a lower charge injection barrier height than those of the pristine graphene-electrode molecular junctions, as a result of interface engineering. This enhancement is due to the increased work function of the TFMS-treated p-doped graphene electrode in the highest occupied molecular orbital-mediated tunneling molecular junctions. The validity of these results was proven by a theoretical analysis based on a coherent transport model that considers asymmetric couplings at the electrode-molecule interfaces.

Preparation of highly hydrophobic cotton fabrics by modification with bifunctional silsesquioxanes in the sol-gel process

Energy Technology Data Exchange (ETDEWEB)

Przybylak, Marcin, E-mail: marcin.przybylak@ppnt.poznan.pl [Poznań Science and Technology Park, Adam Mickiewicz University Foundation, Rubież 46, 61-612 Poznań (Poland); Maciejewski, Hieronim, E-mail: maciejm@amu.edu.pl [Poznań Science and Technology Park, Adam Mickiewicz University Foundation, Rubież 46, 61-612 Poznań (Poland); Faculty of Chemistry, Adam Mickiewicz University, Umultowska 89b, 61-614 Poznań (Poland); Dutkiewicz, Agnieszka, E-mail: agdut@interia.pl [Poznań Science and Technology Park, Adam Mickiewicz University Foundation, Rubież 46, 61-612 Poznań (Poland)

2016-11-30

Highlights: • Fabric hydrophobization process using bifunctional silsesquioxanes was studied. • Superhydrophobic fabric was produced using fluorofunctional silsesquioxanes. • Surface of modified fabrics was analyzed using different techniques. - Abstract: The surface modification of cotton fabrics was carried out using two types of bifunctional fluorinated silsesquioxanes with different ratios of functional groups. The modification was performed either by one- or two-step process. Two methods, the sol-gel and the dip coating method were used in different configurations. The heat treatment and the washing process were applied after modification. The wettability of cotton fabric was evaluated by measuring water contact angles (WCA). Changes in the surface morphology were examined by scanning electron microscopy (SEM, SEM-LFD) and atomic force microscopy (AFM). Moreover, the modified fabrics were subjected to analysis of elemental composition of the applied coatings using SEM-EDS techniques. Highly hydrophobic textiles were obtained in all cases studied and one of the modifications resulted in imparting superhydrophobic properties. Most of impregnated textiles remained hydrophobic even after multiple washing process which shows that the studied modification is durable.

Proximity effect and Andreev reflection in single-C{sub 60} junctions

Energy Technology Data Exchange (ETDEWEB)

Brand, Jonathan; Neel, Nicolas; Kroeger, Joerg [Institut fuer Physik, Technische Universitaet Ilmenau, D-98693 Ilmenau (Germany)

2016-07-01

Single C{sub 60} molecules deposited on an ultrathin oxide film on Nb(110) were investigated using a low-temperature scanning tunnelling microscope. Spectroscopy of the differential conductance (dI/dV) in the tunnelling range indicates proximity-induced superconductivity in junctions comprising the oxide layer as well as single C{sub 60} molecules. Andreev reflection is enhanced upon controlled fabrication of tip-surface contacts. With decreasing electrode separation the Bardeen-Cooper-Schrieffer energy gap gradually evolves into a zero-bias peak in dI/dV spectra reflecting the spectroscopic signature of Andreev reflection. The current-voltage characteristics of the tunnelling and contact junctions are well described by the Blonder-Tinkham-Klapwijk theory. Our spectroscopic data evidence the influence of the electrodes' atomic-scale structure on electron transport across normal metal-superconductor interfaces.

3D MEMS in Standard Processes: Fabrication, Quality Assurance, and Novel Measurement Microstructures

Science.gov (United States)

Lin, Gisela; Lawton, Russell A.

2000-01-01

Three-dimensional MEMS microsystems that are commercially fabricated require minimal post-processing and are easily integrated with CMOS signal processing electronics. Measurements to evaluate the fabrication process (such as cross-sectional imaging and device performance characterization) provide much needed feedback in terms of reliability and quality assurance. MEMS technology is bringing a new class of microscale measurements to fruition. The relatively small size of MEMS microsystems offers the potential for higher fidelity recordings compared to macrosize counterparts, as illustrated in the measurement of muscle cell forces.

Anchored PKA as a gatekeeper for gap junctions.

Science.gov (United States)

Pidoux, Guillaume; Taskén, Kjetil

2015-01-01

Anchored protein kinase A (PKA) bound to A Kinase Anchoring Protein (AKAP) mediates effects of localized increases in cAMP in defined subcellular microdomains and retains the specificity in cAMP-PKA signaling to distinct extracellular stimuli. Gap junctions are pores between adjacent cells constituted by connexin proteins that provide means of communication and transfer of small molecules. While the PKA signaling is known to promote human trophoblast cell fusion, the gap junction communication through connexin 43 (Cx43) is a prerequisite for this process. We recently demonstrated that trophoblast fusion is regulated by ezrin, a known AKAP, which binds to Cx43 and delivers PKA in the vicinity gap junctions. We found that disruption of the ezrin-Cx43 interaction abolished PKA-dependent phosphorylation of Cx43 as well as gap junction communication and subsequently cell fusion. We propose that the PKA-ezrin-Cx43 macromolecular complex regulating gap junction communication constitutes a general mechanism to control opening of Cx43 gap junctions by phosphorylation in response to cAMP signaling in various cell types.

Single walled carbon nanotube-based junction biosensor for detection of Escherichia coli.

Directory of Open Access Journals (Sweden)

Kara Yamada

Full Text Available Foodborne pathogen detection using biomolecules and nanomaterials may lead to platforms for rapid and simple electronic biosensing. Integration of single walled carbon nanotubes (SWCNTs and immobilized antibodies into a disposable bio-nano combinatorial junction sensor was fabricated for detection of Escherichia coli K-12. Gold tungsten wires (50 µm diameter coated with polyethylenimine (PEI and SWCNTs were aligned to form a crossbar junction, which was functionalized with streptavidin and biotinylated antibodies to allow for enhanced specificity towards targeted microbes. In this study, changes in electrical current (ΔI after bioaffinity reactions between bacterial cells (E. coli K-12 and antibodies on the SWCNT surface were monitored to evaluate the sensor's performance. The averaged ΔI increased from 33.13 nA to 290.9 nA with the presence of SWCNTs in a 10(8 CFU/mL concentration of E. coli, thus showing an improvement in sensing magnitude. Electrical current measurements demonstrated a linear relationship (R2 = 0.973 between the changes in current and concentrations of bacterial suspension in range of 10(2-10(5 CFU/mL. Current decreased as cell concentrations increased, due to increased bacterial resistance on the bio-nano modified surface. The detection limit of the developed sensor was 10(2 CFU/mL with a detection time of less than 5 min with nanotubes. Therefore, the fabricated disposable junction biosensor with a functionalized SWCNT platform shows potential for high-performance biosensing and application as a detection device for foodborne pathogens.

Fluctuations of the peak current of tunnel diodes in multi-junction solar cells

International Nuclear Information System (INIS)

Jandieri, K; Baranovskii, S D; Stolz, W; Gebhard, F; Guter, W; Hermle, M; Bett, A W

2009-01-01

Interband tunnel diodes are widely used to electrically interconnect the individual subcells in multi-junction solar cells. Tunnel diodes have to operate at high current densities and low voltages, especially when used in concentrator solar cells. They represent one of the most critical elements of multi-junction solar cells and the fluctuations of the peak current in the diodes have an essential impact on the performance and reliability of the devices. Recently we have found that GaAs tunnel diodes exhibit extremely high peak currents that can be explained by resonant tunnelling through defects homogeneously distributed in the junction. Experiments evidence rather large fluctuations of the peak current in the diodes fabricated from the same wafer. It is a challenging task to clarify the reason for such large fluctuations in order to improve the performance of the multi-junction solar cells. In this work we show that the large fluctuations of the peak current in tunnel diodes can be caused by relatively small fluctuations of the dopant concentration. We also show that the fluctuations of the peak current become smaller for deeper energy levels of the defects responsible for the resonant tunnelling.

Effects of the Seed Distance on the Characteristics of the (100)/(100) Junctions of Top-Seeded Melt Growth Processed YBCO Superconductors Using Two Seeds

Energy Technology Data Exchange (ETDEWEB)

Kim, C.J.; Gee, Y.A.; Hong, G.Y. [Korea Atomic Energy Research Institute, Taejon (Korea); Kim, H.J.; Joo, J.H. [Sungkyunkwan University, Suwon (Korea); Han, S.C.; Han, Y.H.; Sung, T.H.; Kim, S.J. [Korea Electric Power Research Institute, Taejon (Korea)

1999-06-01

The effects of the distance (d) between two Sm{sub 1.8}Ba{sub 2.4}Cu{sub 3.4}Ox seeds on the characteristics of the (100)/(100) junctions of top-seeded melt growth processed YBCO superconductors were investigated. The trapped magnetic field at the grain junction and the levitation force of the top surface decreased with increasing d value. The degradation of the properties is attributed to the presence of the residual melt-forming phases (CuO and BaCUO{sub 2}) at the grain junction, whose amount depends on the d value. (author). 18 refs., 10 figs.

Advanced ACTPol Multichroic Polarimeter Array Fabrication Process for 150 mm Wafers

Science.gov (United States)

Duff, S. M.; Austermann, J.; Beall, J. A.; Becker, D.; Datta, R.; Gallardo, P. A.; Henderson, S. W.; Hilton, G. C.; Ho, S. P.; Hubmayr, J.; Koopman, B. J.; Li, D.; McMahon, J.; Nati, F.; Niemack, M. D.; Pappas, C. G.; Salatino, M.; Schmitt, B. L.; Simon, S. M.; Staggs, S. T.; Stevens, J. R.; Van Lanen, J.; Vavagiakis, E. M.; Ward, J. T.; Wollack, E. J.

2016-08-01

Advanced ACTPol (AdvACT) is a third-generation cosmic microwave background receiver to be deployed in 2016 on the Atacama Cosmology Telescope (ACT). Spanning five frequency bands from 25 to 280 GHz and having just over 5600 transition-edge sensor (TES) bolometers, this receiver will exhibit increased sensitivity and mapping speed compared to previously fielded ACT instruments. This paper presents the fabrication processes developed by NIST to scale to large arrays of feedhorn-coupled multichroic AlMn-based TES polarimeters on 150-mm diameter wafers. In addition to describing the streamlined fabrication process which enables high yields of densely packed detectors across larger wafers, we report the details of process improvements for sensor (AlMn) and insulator (SiN_x) materials and microwave structures, and the resulting performance improvements.

Experimental validation of a simple, low-cost, T-junction droplet generator fabricated through 3D printing

International Nuclear Information System (INIS)

Donvito, Lidia; Galluccio, Laura; Lombardo, Alfio; Morabito, Giacomo; Nicolosi, Alfio; Reno, Marco

2015-01-01

Three-dimensional printing has been recently proposed and assessed for continuous flow microfluidic devices. In this paper the focus is on a new application of this rapid and low cost method for microfluidic device prototyping: droplets production through a T-junction generator. The feasibility of this new methodology is assessed by means of an experimental study in which the statistical parameters which characterize the production of droplets are analyzed. Furthermore, this study assesses the validity of previous theoretical and experimental results, obtained for a PDMS T-junction droplet generator, also in the case of a 3D printed Acrylonitrile microfluidic chip. Finally, the feasibility of producing monodisperse droplets by analyzing the polydispersity index of the prepared droplets is demonstrated. (paper)

Field emission current from a junction field-effect transistor

Energy Technology Data Exchange (ETDEWEB)

Monshipouri, Mahta; Abdi, Yaser, E-mail: y.abdi@ut.ac.ir [University of Tehran, Nano-Physics Research Laboratory, Department of Physics (Iran, Islamic Republic of)

2015-04-15

Fabrication of a titanium dioxide/carbon nanotube (TiO{sub 2}/CNT)-based transistor is reported. The transistor can be considered as a combination of a field emission transistor and a junction field-effect transistor. Using direct current plasma-enhanced chemical vapor deposition (DC-PECVD) technique, CNTs were grown on a p-typed (100)-oriented silicon substrate. The CNTs were then covered by TiO{sub 2} nanoparticles 2–5 nm in size, using an atmospheric pressure CVD technique. In this device, TiO{sub 2}/CNT junction is responsible for controlling the emission current. High on/off-current ratio and proper gate control are the most important advantages of device. A model based on Fowler–Nordheim equation is utilized for calculation of the emission current and the results are compared with experimental data. The effect of TiO{sub 2}/CNT hetero-structure is also investigated, and well modeled.

Development and fabrication of a high current, fast recovery power diode

Science.gov (United States)

Berman, A. H.; Balodis, V.; Devance, D. C.; Gaugh, C. E.; Karlsson, E. A.

1983-01-01

A high voltage (VR = 1200 V), high current (IF = 150 A), fast recovery ( 700 ns) and low forward voltage drop ( 1.5 V) silicon rectifier was designed and the process developed for its fabrication. For maximum purity, uniformity and material characteristic stability, neutron transmutation n-type doped float zone silicon is used. The design features a hexagonal chip for maximum area utilization of space available in the DO-8 diode package, PIN diffused junction structure with deep diffused D(+) anode and a shallow high concentration n(+) cathode. With the high temperature glass passivated positive bevel mesa junction termination, the achieved blocking voltage is close to the theoretical limit of the starting material. Gold diffusion is used to control the lifetime and the resulting effect on switching speed and forward voltage tradeoff. For solder reflow assembly, trimetal (Al-Ti-Ni) contacts are used. The required major device electrical characteristics were achieved. Due to the tradeoff nature of forward voltage drop and reverse recovery time, a compromise was reached for these values.

Materials Selection And Fabrication Practices For Food Processing Equipment Manufacturers In Uganda

Directory of Open Access Journals (Sweden)

John Baptist Kirabira

2017-08-01

Full Text Available The food processing industry is one of the fast-growing sub-sectors in Uganda. The industry which is majorly composed of medium and small scale firms depends on the locally developed food processing equipment. Due to lack of effective materials selection practices employed by the equipment manufacturers the materials normally selected for most designs are not the most appropriate ones hence compromising the quality of the equipment produced. This has not only led to poor quality food products due to contamination but could also turn out health hazardous to the consumers of the food products. This study involved the assessment of the current materials selection and fabrication procedures used by the food processing equipment manufacturers with a view of devising best practices that can be used to improve the quality of the food products processed by the locally fabricated equipment. Results of the study show that designers experience biasness and desire to minimize cost compromise the materials selection procedure. In addition to failing to choose the best material for a given application most equipment manufacturers are commonly fabricating equipment with inadequate surface finish and improper weldments. This hinders the equipments ability to meet food hygiene standards.

Fabrication of subwavelength metallic structures by using a metal direct imprinting process

International Nuclear Information System (INIS)

Hsieh, C W; Hsiung, H Y; Lu, Y T; Sung, C K; Wang, W H

2007-01-01

This work employs a metal direct imprinting process, which possesses the characteristics of simplicity, low-cost and high resolution, for the fabrication of subwavelength structures on a metallic thin film. Herein, the mould featuring periodic line structures is manufactured by using E-beam lithography and followed by a dry etching process; meanwhile, the thin film is fabricated by sputtering Al on a silicon substrate. AFM section analyses are employed to measure imprinting depths of the subwavelength metallic structures and it is found that the uniformity of the imprinting depths is affected by the designed patterns, the material property of thin film and mould deformation. The process temperature and the mould filling that influence the transferred quality are investigated. In addition, TEM is also utilized to examine defects in the subwavelength metallic structures. Finally, good quality subwavelength metallic structures are fabricated under a pressure of 300 MPa for 60 s at room temperature. In this study, we have demonstrated that subwavelength metallic structures with a minimum linewidth of less than 100 nm on the Al thin film are successfully constructed by the metal direct imprinting process

Scalability of Ferroelectric Tunnel Junctions to Sub-100 nm Dimensions

Science.gov (United States)

Abuwasib, Mohammad

The ferroelectric tunnel junction (FTJ) is an emerging low-power device that has potential application as a non-volatile memory and logic element in beyond-CMOS circuits. As a beyond- CMOS device, it is necessary to investigate the device scaling limit of FTJs to sub-50 nm dimensions. In addition to the fabrication of scaled FTJs, the integration challenges and CMOS compatibility of the device needs to be addressed. FTJ device performance including ON/OFF ratio, memory retention time, switching endurance, write /read speed and power dissipation need to be characterized for benchmarking of this emerging device, compared to its charge-based counterparts such as DRAM, NAND/NOR flash, as well as to other emerging memory devices. In this dissertation, a detailed investigation of scaling of BaTiO3 (BTO) based FTJs was performed, from full-scale integration to electrical characterization. Two types of FTJs with La0.67Sr0.33MnO3 (LSMO) and SrRuO3 (SRO) bottom electrodes were investigated in this work namely; Co/BTO/LSMO and Co/BTO/SRO. A CMOS compatible fabrication process for integration of Co/BTO/LSMO FTJ devices ( 3x3 microm 2) was demonstrated for the first time using standard photolithography and self-aligned RIE technique. The fabricated FTJ device showed switching behavior, however, degradation of the LSMO contact was observed during the fabrication process. A detailed investigation of the contact properties of bottom electrode materials (LSMO, SRO) for BTO-based FTJs was performed. The process and thermal stability of different contact overlayers (Ti, Pt) was explained to understand the nature of the ohmic contacts for metal to SRO and LSMO layers. Noble metals-to-SRO was found to form the most stable contacts for FTJs. Based on this study, a systematic scalability study of Co/BTO/SRO FTJs was carried out from micron ( 3x3 microm2) to submicron ( 200x200 nm2) dimensions. Positive UP Negative Down (PUND) measurement confirms the ferroelectric properties of the BTO

High Tc Josephson Junctions, SQUIDs and magnetometers

International Nuclear Information System (INIS)

Clarke, J.

1991-01-01

There has recently been considerable progress in the state-of-the-art of high-T c magnetometers based on dc SQUIDs (Superconducting Quantum Interference Devices). This progress is due partly to the development of more manufacturable Josephson junctions, making SQUIDs easier to fabricate, and partly to the development of multiturn flux transformers that convert the high sensitivity of SQUIDs to magnetic flux to a correspondingly high sensitivity to magnetic field. Needless to say, today's high-T c SQUIDs are still considerably less sensitive than their low-T c counterparts, particularly at low frequencies (f) where their level of 1/f noise remains high. Nonetheless, the performance of the high-T c devices has now reached the point where they are adequate for a number of the less demanding applications; furthermore, as we shall see, at least modest improvements in performance are expected in the near future. In this article, the author outlines these various developments. This is far from a comprehensive review of the field, however, and, apart from Sec. 2, he describes largely his own work. He begins in Sec. 2 with an overview of the various types of Josephson junctions that have been investigated, and in Sec. 3, he describes some of the SQUIDs that have been tested, and assess their performance. Section 4 discuss the development of the multilayer structures essential for an interconnect technology, and, in particular, for crossovers and vias. Section 5 shows how this technology enables one to fabricate multiturn flux transformers which, in turn, can be coupled to SQUIDs to make magnetometers. The performance and possible future improvements in these magnetometers are assessed, and some applications mentioned

Four-junction superconducting circuit

Science.gov (United States)

Qiu, Yueyin; Xiong, Wei; He, Xiao-Ling; Li, Tie-Fu; You, J. Q.

2016-01-01

We develop a theory for the quantum circuit consisting of a superconducting loop interrupted by four Josephson junctions and pierced by a magnetic flux (either static or time-dependent). In addition to the similarity with the typical three-junction flux qubit in the double-well regime, we demonstrate the difference of the four-junction circuit from its three-junction analogue, including its advantages over the latter. Moreover, the four-junction circuit in the single-well regime is also investigated. Our theory provides a tool to explore the physical properties of this four-junction superconducting circuit. PMID:27356619

Towards nanoscale magnetic memory elements : fabrication and properties of sub - 100 nm magnetic tunnel junctions

NARCIS (Netherlands)

Fabrie, C.G.C.H.M.

2008-01-01

The rapidly growing field of spintronics has recently attracted much attention. Spintronics is electronics in which the spin degree of freedom has been added to conventional chargebased electronic devices. A magnetic tunnel junction (MTJ) is an example of a spintronic device. MTJs consist of two

Microstructure fabrication process induced modulations in CVD graphene

Energy Technology Data Exchange (ETDEWEB)

Matsubayashi, Akitomo, E-mail: amatsubayashi@albany.edu; Zhang, Zhenjun; Lee, Ji Ung; LaBella, Vincent P., E-mail: vlabella@albany.edu [College of Nanoscale Science and Engineering, University at Albany, SUNY, Albany, New York 12203 (United States)

2014-12-15

The systematic Raman spectroscopic study of a “mimicked” graphene device fabrication is presented. Upon photoresist baking, compressive stress is induced in the graphene which disappears after it is removed. The indirect irradiation from the electron beam (through the photoresist) does not significantly alter graphene characteristic Raman peaks indicating that graphene quality is preserved upon the exposure. The 2D peak shifts and the intensity ratio of 2D and G band, I(2D)/I(G), decreases upon direct metal deposition (Co and Py) suggesting that the electronic modulation occurs due to sp{sup 2} C-C bond weakening. In contrast, a thin metal oxide film deposited graphene does not show either the significant 2D and G peaks shift or I(2D)/I(G) decrease upon the metal deposition suggesting the oxide protect the graphene quality in the fabrication process.

Microstructure fabrication process induced modulations in CVD graphene

Science.gov (United States)

Matsubayashi, Akitomo; Zhang, Zhenjun; Lee, Ji Ung; LaBella, Vincent P.

2014-12-01

The systematic Raman spectroscopic study of a "mimicked" graphene device fabrication is presented. Upon photoresist baking, compressive stress is induced in the graphene which disappears after it is removed. The indirect irradiation from the electron beam (through the photoresist) does not significantly alter graphene characteristic Raman peaks indicating that graphene quality is preserved upon the exposure. The 2D peak shifts and the intensity ratio of 2D and G band, I(2D)/I(G), decreases upon direct metal deposition (Co and Py) suggesting that the electronic modulation occurs due to sp2 C-C bond weakening. In contrast, a thin metal oxide film deposited graphene does not show either the significant 2D and G peaks shift or I(2D)/I(G) decrease upon the metal deposition suggesting the oxide protect the graphene quality in the fabrication process.

Magnetic tunnel junctions with AlN and AlNxOy barriers

International Nuclear Information System (INIS)

Schwickert, M. M.; Childress, J. R.; Fontana, R. E.; Kellock, A. J.; Rice, P. M.; Ho, M. K.; Thompson, T. J.; Gurney, B. A.

2001-01-01

Nonoxide tunnel barriers such as AlN are of interest for magnetic tunnel junctions to avoid the oxidation of the magnetic electrodes. We have investigated the fabrication and properties of thin AlN-based barriers for use in low resistance magnetic tunnel junctions. Electronic, magnetic and structural data of tunnel valves of the form Ta (100 Aa)/PtMn (300 Aa)/CoFe 20 (20 Aa - 25 Aa)/barrier/CoFe 20 (10 - 20 Aa)/NiFe 16 (35 - 40 Aa)/Ta (100 Aa) are presented, where the barrier consists of AlN, AlN x O y or AlN/AlO x with total thicknesses between 8 and 15 Aa. The tunnel junctions were sputter deposited and then lithographically patterned down to 2 x 2μm 2 devices. AlN was deposited by reactive sputtering from an Al target with 20% - 35% N 2 in the Ar sputter gas at room temperature, resulting in stoichiometric growth of AlN x (x=0.50±0.05), as determined by RBS. TEM analysis shows that the as-deposited AlN barrier is crystalline. For AlN barriers and AlN followed by natural O 2 oxidation, we obtain tunnel magnetoresistance >10% with specific junction resistance R j down to 60Ωμm 2 . [copyright] 2001 American Institute of Physics

Observation of weak coupling effects in Ba0.6 K0.4 Fe2 As2 junctions patterned across a naturally formed grain boundary

International Nuclear Information System (INIS)

Hong, Sung-Hak; Lee, Soon-Gul; Lee, Nam Hoon; Kang, Won Nam

2014-01-01

We have fabricated intergrain nanobridge junctions from a Ba 0.6 K 0.4 Fe 2 As 2 film and observed their weak coupling effects. We prepared the junction by patterning a nanobridge across a natural grain boundary by using a focused ion beam etching technique and studied their superconducting transition properties. The resistive transition showed three steps: the transitions of the bulk, the microbridge, and the junction grain boundary. Current–voltage curves showed typical Josephson junction characteristics, well-matched with the model of a resistively shunted junction incorporated with thermal fluctuations. Fitting data to theory revealed much larger current fluctuations than expected from the Johnson–Nyquist theorem. The junction showed a linear temperature dependence of the critical current and a constant normal-state resistance, indicating that the grain boundary played a role as a tunnel barrier with a very poor conductance. (paper)

Majorana zero modes in Dirac semimetal Josephson junctions

Science.gov (United States)

Li, Chuan; de Boer, Jorrit; de Ronde, Bob; Huang, Yingkai; Golden, Mark; Brinkman, Alexander

We have realized proximity-induced superconductivity in a Dirac semimetal and revealed the topological nature of the superconductivity by the observation of Majorana zero modes. As a Dirac semimetal, Bi0.97Sb0.03 is used, where a three-dimensional Dirac cone exists in the bulk due to an accidental touching between conduction and valence bands. Electronic transport measurements on Hall-bars fabricated out of Bi0.97Sb0.03 flakes consistently show negative magnetoresistance for magnetic fields parallel to the current, which is associated with the chiral anomaly. In perpendicular magnetic fields, we see Shubnikov-de Haas oscillations that indicate very low carrier densities. The low Fermi energy and protection against backscattering in our Dirac semimetal Josephson junctions provide favorable conditions for a large contribution of Majorana zero modes to the supercurrent. In radiofrequency irradiation experiments, we indeed observe these Majorana zero modes in Nb-Bi0.97Sb0.03-Nb Josephson junctions as a 4 π periodic contribution to the current-phase relation.

Shocks induced by junctions in totally asymmetric simple exclusion processes under periodic boundary condition

Energy Technology Data Exchange (ETDEWEB)

Sun, Xiaoyan, E-mail: sunxiaoyan1@gmail.com [College of Physics and Electronic Engineering, Guangxi Teacher Education University, Nanning 530001 (China); Xie, Yanbo [Department of Modern Physics, University of Science and Technology of China, Hefei 230026 (China); He, Zhiwei [College of Science, China Agricultural University, Beijing 100083 (China); Wang, Binghong [Department of Modern Physics, University of Science and Technology of China, Hefei 230026 (China)

2011-07-11

This Letter investigates a totally asymmetric simple exclusion process (TASEP) with junctions in a one-dimensional transport system. Parallel update rules and periodic boundary condition are adopted. Two cases corresponding to different update rules are studied. The results show that the stationary states of system mainly depend on the selection behavior of particle at the bifurcation point. -- Highlights: → For no preference case, the system exists three stationary phases. → For preference case, the system exists five stationary phases. → The road lengths have not qualitative influence on the fundamental diagram.

Evidence of Processing Non-Idealities in 4H-SiC Integrated Circuits Fabricated with Two Levels of Metal Interconnect

Science.gov (United States)

Spry, David J.; Neudeck, Philip G.; Liangyu, Chen; Evans, Laura J.; Lukco, Dorothy; Chang, Carl W.; Beheim, Glenn M.

2015-01-01

The fabrication and prolonged 500 C electrical testing of 4H-SiC junction field effect transistor (JFET) integrated circuits (ICs) with two levels of metal interconnect is reported in another submission to this conference proceedings. While some circuits functioned more than 1000 hours at 500 C, the majority of packaged ICs from this wafer electrically failed after less than 200 hours of operation in the same test conditions. This work examines the root physical degradation and failure mechanisms believed responsible for observed large discrepancies in 500 C operating time. Evidence is presented for four distinct issues that significantly impacted 500 C IC operational yield and lifetime for this wafer.

Materials and fabrication processes for operation in hot hydrogen

International Nuclear Information System (INIS)

Tuffias, R.H.; Duffy, A.J.; Arrieta, V.M.; Abrams, W.M.; Benander, R.E.

1997-01-01

Operation in hot (2500 endash 3000 K) hydrogen severely limits the choice of structural materials. Rhenium is nonreactive with and has low permeability to hydrogen, and has sufficient strength up to 2800 K. Carbon, in the form of graphite or carbon composites, has excellent high temperature strength but reacts with hydrogen to form methane at a rapid rate above 2000 K. The carbides of zirconium, niobium, hafnium, and tantalum are nonreactive with and have low permeability to hydrogen, but they can be reliably fabricated only in the form of coatings. In order to demonstrate the Integrated Solar Upper Stage (ISUS) solar-thermal propulsion concept, rhenium and rhenium-coated graphite were chosen as the structural materials for the receiver-absorber-converter (RAC) component of the ISUS system. Several methods were investigated for fabricating the rhenium parts and coatings, with chemical vapor deposition (CVD) and Ultramet chosen as the most likely process and company for success. The CVD or rhenium and other refractory materials were thus applied to the ISUS program for fabrication of the RAC subsystem. copyright 1997 American Institute of Physics

Wire Array Solar Cells: Fabrication and Photoelectrochemical Studies

Science.gov (United States)

Spurgeon, Joshua Michael

Despite demand for clean energy to reduce our addiction to fossil fuels, the price of these technologies relative to oil and coal has prevented their widespread implementation. Solar energy has enormous potential as a carbon-free resource but is several times the cost of coal-produced electricity, largely because photovoltaics of practical efficiency require high-quality, pure semiconductor materials. To produce current in a planar junction solar cell, an electron or hole generated deep within the material must travel all the way to the junction without recombining. Radial junction, wire array solar cells, however, have the potential to decouple the directions of light absorption and charge-carrier collection so that a semiconductor with a minority-carrier diffusion length shorter than its absorption depth (i.e., a lower quality, potentially cheaper material) can effectively produce current. The axial dimension of the wires is long enough for sufficient optical absorption while the charge-carriers are collected along the shorter radial dimension in a massively parallel array. This thesis explores the wire array solar cell design by developing potentially low-cost fabrication methods and investigating the energy-conversion properties of the arrays in photoelectrochemical cells. The concept was initially investigated with Cd(Se, Te) rod arrays; however, Si was the primary focus of wire array research because its semiconductor properties make low-quality Si an ideal candidate for improvement in a radial geometry. Fabrication routes for Si wire arrays were explored, including the vapor-liquid-solid growth of wires using SiCl4. Uniform, vertically aligned Si wires were demonstrated in a process that permits control of the wire radius, length, and spacing. A technique was developed to transfer these wire arrays into a low-cost, flexible polymer film, and grow multiple subsequent arrays using a single Si(111) substrate. Photoelectrochemical measurements on Si wire array

Silicon nitride tri-layer vertical Y-junction and 3D couplers with arbitrary splitting ratio for photonic integrated circuits.

Science.gov (United States)

Shang, Kuanping; Pathak, Shibnath; Liu, Guangyao; Feng, Shaoqi; Li, Siwei; Lai, Weicheng; Yoo, S J B

2017-05-01

We designed and demonstrated a tri-layer Si3N4/SiO2 photonic integrated circuit capable of vertical interlayer coupling with arbitrary splitting ratios. Based on this multilayer photonic integrated circuit platform with each layer thicknesses of 150 nm, 50 nm, and 150 nm, we designed and simulated the vertical Y-junctions and 3D couplers with arbitrary power splitting ratios between 1:10 and 10:1 and with negligible(< -50 dB) reflection. Based on the design, we fabricated and demonstrated tri-layer vertical Y-junctions with the splitting ratios of 1:1 and 3:2 with excess optical losses of 0.230 dB. Further, we fabricated and demonstrated the 1 × 3 3D couplers with the splitting ratio of 1:1:4 for symmetric structures and variable splitting ratio for asymmetric structures.

Fabrication of nanostructure via self-assembly of nanowires within the AAO template

Directory of Open Access Journals (Sweden)

Brust Mathias

2006-01-01

Full Text Available AbstractThe novel nanostructures are fabricated by the spatial chemical modification of nanowires within the anodic aluminum oxide (AAO template. To make the nanowires better dispersion in the aqueous solution, the copper is first deposited to fill the dendrite structure at the bottom of template. During the process of self-assembly, the dithiol compound was used as the connector between the nanowires and nanoparticles by a self-assembly method. The nanostructures of the nano cigars and structure which is containing particles junction are characterized by transmission electron microscopy (TEM. These kinds of novel nanostructure will be the building blocks for nanoelectronic and nanophotonic devices.

A scalable fabrication process of polymer microneedles

Directory of Open Access Journals (Sweden)

Yang S

2012-03-01

Full Text Available Sixing Yang, Yan Feng, Lijun Zhang, Nixiang Chen, Weien Yuan, Tuo JinSchool of Pharmacy, Shanghai Jiao Tong University, Shanghai, People's Republic of ChinaAbstract: While polymer microneedles may easily be fabricated by casting a solution in a mold, either centrifugation or vacuumizing is needed to pull the viscous polymer solution into the microholes of the mold. We report a novel process to fabricate polymer microneedles with a one-sided vacuum using a ceramic mold that is breathable but water impermeable. A polymer solution containing polyvinyl alcohol and polysaccharide was cast in a ceramic mold and then pulled into the microholes by a vacuum applied to the opposite side of the mold. After cross-linking and solidification through freeze-thawing, the microneedle patch was detached from the mold and transferred with a specially designed instrument for the drying process, during which the patch shrank evenly to form an array of regular and uniform needles without deformation. Moreover, the shrinkage of the patches helped to reduce the needles' size to ease microfabrication of the male mold. The dried microneedle patches were finally punched to the desired sizes to achieve various properties, including sufficient strength to penetrate skin, microneedles-absorbed water-swelling ratios, and drug-release kinetics. The results showed that the microneedles were strong enough to penetrate pigskin and that their performance was satisfactory in terms of swelling and drug release.Keywords: polymer microneedles, ceramic mold, polyvinyl alcohol, swelling

Dual-gate operation and carrier transport in SiGe p-n junction nanowires

Science.gov (United States)

Delker, C. J.; Yoo, J. Y.; Bussmann, E.; Swartzentruber, B. S.; Harris, C. T.

2017-11-01

We investigate carrier transport in silicon-germanium nanowires with an axial p-n junction doping profile by fabricating these wires into transistors that feature separate top gates over each doping segment. By independently biasing each gate, carrier concentrations in the n- and p-side of the wire can be modulated. For these devices, which were fabricated with nickel source-drain electrical contacts, holes are the dominant charge carrier, with more favorable hole injection occurring on the p-side contact. Channel current exhibits greater sensitivity to the n-side gate, and in the reverse biased source-drain configuration, current is limited by the nickel/n-side Schottky contact.

New insights on SOI Tunnel FETs with low-temperature process flow for CoolCube™ integration

Science.gov (United States)

Diaz Llorente, C.; Le Royer, C.; Batude, P.; Fenouillet-Beranger, C.; Martinie, S.; Lu, C.-M. V.; Allain, F.; Colinge, J.-P.; Cristoloveanu, S.; Ghibaudo, G.; Vinet, M.

2018-06-01

This paper reports the fabrication and electrical characterization of planar SOI Tunnel FETs (TFETs) made using a Low-Temperature (LT) process designed for 3D sequential integration. These proof-of-concept TFETs feature junctions obtained by Solid Phase Epitaxy Regrowth (SPER). Their electrical behavior is analyzed and compared to reference samples (regular process using High-Temperature junction formation, HT). Dual ID-VDS measurements verify that the TFET structures present Band-to-Band tunnelling (BTBT) carrier injection and not Schottky Barrier tunnelling. P-mode operating LT TFETs deliver an ON state current similar to that of the HT reference, opening the door towards optimized devices operating with very low threshold voltage VTH and low supply voltage VDD.

Phase-dependent noise in Josephson junctions

Science.gov (United States)

Sheldon, Forrest; Peotta, Sebastiano; Di Ventra, Massimiliano

2018-03-01

In addition to the usual superconducting current, Josephson junctions (JJs) support a phase-dependent conductance related to the retardation effect of tunneling quasi-particles. This introduces a dissipative current with a memory-resistive (memristive) character that should also affect the current noise. By means of the microscopic theory of tunnel junctions we compute the complete current autocorrelation function of a Josephson tunnel junction and show that this memristive component gives rise to both a previously noted phase-dependent thermal noise, and an undescribed non-stationary, phase-dependent dynamic noise. As experiments are approaching ranges in which these effects may be observed, we examine the form and magnitude of these processes. Their phase dependence can be realized experimentally as a hysteresis effect and may be used to probe defects present in JJ based qubits and in other superconducting electronics applications.

Geneva University - Superconducting flux quantum bits: fabricated quantum objects

CERN Multimedia

2007-01-01

Ecole de physique Département de physique nucléaire et corspusculaire 24, Quai Ernest-Ansermet 1211 GENEVE 4 Tél: (022) 379 62 73 Fax: (022) 379 69 92 Lundi 29 janvier 2007 COLLOQUE DE LA SECTION DE PHYSIQUE 17 heures - Auditoire Stueckelberg Superconducting flux quantum bits: fabricated quantum objects Prof. Hans Mooij / Kavli Institute of Nanoscience, Delft University of Technology The quantum conjugate variables of a superconductor are the charge or number of Cooper pairs, and the phase of the order parameter. In circuits that contain small Josephson junctions, these quantum properties can be brought forward. In Delft we study so-called flux qubits, superconducting rings that contain three small Josephson junctions. When a magnetic flux of half a flux quantum is applied to the loop, there are two states with opposite circulating current. For suitable junction parameters, a quantum superposition of those macroscopic states is possible. Transitions can be driven with resonant microwaves. These quantum ...

Ballistic Graphene Josephson Junctions from the Short to the Long Junction Regimes.

Science.gov (United States)

Borzenets, I V; Amet, F; Ke, C T; Draelos, A W; Wei, M T; Seredinski, A; Watanabe, K; Taniguchi, T; Bomze, Y; Yamamoto, M; Tarucha, S; Finkelstein, G

2016-12-02

We investigate the critical current I_{C} of ballistic Josephson junctions made of encapsulated graphene-boron-nitride heterostructures. We observe a crossover from the short to the long junction regimes as the length of the device increases. In long ballistic junctions, I_{C} is found to scale as ∝exp(-k_{B}T/δE). The extracted energies δE are independent of the carrier density and proportional to the level spacing of the ballistic cavity. As T→0 the critical current of a long (or short) junction saturates at a level determined by the product of δE (or Δ) and the number of the junction's transversal modes.

The effect of attachment and detachment on totally asymmetric exclusion processes with junctions

International Nuclear Information System (INIS)

Cai Zhongpan; Yuan Yaoming; Jiang Rui; Wu Qingsong; Nishinari, Katsuhiro

2009-01-01

In this paper, we investigate totally asymmetric exclusion processes on lattices with junctions, considering random particle attachment and detachment in the bulk. Particles randomly attach to the bulk with the rate ω A and detach from the bulk with the rate ω D . Setting K = ω A /ω D , we study three cases: K>1, K = 1 and K 1, additional phases are observed in the case of K≤1. Moreover, it is shown that at a fixed K, the phase diagram structure changes with the increase of ω D . A mean-field analysis has been carried out and the analytic results are in good agreement with the simulation results

Equivalent Josephson junctions

International Nuclear Information System (INIS)

Boyadzhiev, T.L.; ); Semerdzhieva, E.G.; Shukrinov, Yu.M.; Fiziko-Tekhnicheskij Inst., Dushanbe

2008-01-01

The magnetic field dependences of critical current are numerically constructed for a long Josephson junction with a shunt- or resistor-type microscopic inhomogeneities and compared to the critical curve of a junction with exponentially varying width. The numerical results show that it is possible to replace the distributed inhomogeneity of a long Josephson junction by an inhomogeneity localized at one of its ends, which has certain technological advantages. It is also shown that the critical curves of junctions with exponentially varying width and inhomogeneities localized at the ends are unaffected by the mixed fluxon-antifluxon distributions of the magnetic flux [ru

Mixed-order phase transition of the contact process near multiple junctions.

Science.gov (United States)

Juhász, Róbert; Iglói, Ferenc

2017-02-01

We have studied the phase transition of the contact process near a multiple junction of M semi-infinite chains by Monte Carlo simulations. As opposed to the continuous transitions of the translationally invariant (M=2) and semi-infinite (M=1) system, the local order parameter is found to be discontinuous for M>2. Furthermore, the temporal correlation length diverges algebraically as the critical point is approached, but with different exponents on the two sides of the transition. In the active phase, the estimate is compatible with the bulk value, while in the inactive phase it exceeds the bulk value and increases with M. The unusual local critical behavior is explained by a scaling theory with an irrelevant variable, which becomes dangerous in the inactive phase. Quenched spatial disorder is found to make the transition continuous in agreement with earlier renormalization group results.

InGaN pn-junctions grown by PA-MBE: Material characterization and fabrication of nanocolumn electroluminescent devices

Science.gov (United States)

Gherasoiu, I.; Yu, K. M.; Reichertz, L.; Walukiewicz, W.

2015-09-01

PN junctions are basic building blocks of many electronic devices and their performance depends on the structural properties of the component layers and on the type and the amount of the doping impurities incorporated. Magnesium is the common p-type dopant for nitride semiconductors while silicon and more recently germanium are the n-dopants of choice. In this paper, therefore we analyze the quantitative limits for Mg and Ge incorporation on GaN and InGaN with high In content. We also discuss the challenges posed by the growth and characterization of InGaN pn-junctions and we discuss the properties of large area, long wavelength nanocolumn LEDs grown on silicon (1 1 1) by PA-MBE.

GIDL analysis of the process variation effect in gate-all-around nanowire FET

Science.gov (United States)

Kim, Shinkeun; Seo, Youngsoo; Lee, Jangkyu; Kang, Myounggon; Shin, Hyungcheol

2018-02-01

In this paper, the gate-induced drain leakage (GIDL) is analyzed on gate-all-around (GAA) Nanowire FET (NW FET) with ellipse-shaped channel induced by process variation effect (PVE). The fabrication process of nanowire can lead to change the shape of channel cross section from circle to ellipse. The effect of distorted channel shape is investigated and verified by technology computer-aided design (TCAD) simulation in terms of the GIDL current. The simulation results demonstrate that the components of GIDL current are two mechanisms of longitudinal band-to-band tunneling (L-BTBT) at body/drain junction and transverse band-to-band tunneling (T-BTBT) at gate/drain junction. These two mechanisms are investigated on channel radius (rnw) and aspect ratio of ellipse-shape respectively and together.

Composite material having high thermal conductivity and process for fabricating same

Science.gov (United States)

Colella, Nicholas J.; Davidson, Howard L.; Kerns, John A.; Makowiecki, Daniel M.

1998-01-01

A process for fabricating a composite material such as that having high thermal conductivity and having specific application as a heat sink or heat spreader for high density integrated circuits. The composite material produced by this process has a thermal conductivity between that of diamond and copper, and basically consists of coated diamond particles dispersed in a high conductivity metal, such as copper. The composite material can be fabricated in small or relatively large sizes using inexpensive materials. The process basically consists, for example, of sputter coating diamond powder with several elements, including a carbide forming element and a brazeable material, compacting them into a porous body, and infiltrating the porous body with a suitable braze material, such as copper-silver alloy, thereby producing a dense diamond-copper composite material with a thermal conductivity comparable to synthetic diamond films at a fraction of the cost.

A piezoresistive cantilever for lateral force detection fabricated by a monolithic post-CMOS process

International Nuclear Information System (INIS)

Ji Xu; Li Zhihong; Li Juan; Wang Yangyuan; Xi Jianzhong

2008-01-01

This paper presents a post-CMOS process to monolithically integrate a piezoresistive cantilever for lateral force detection and signal processing circuitry. The fabrication process includes a standard CMOS process and one more lithography step to micromachine the cantilever structure in the post-CMOS process. The piezoresistors are doped in the CMOS process but defined in the post-CMOS micromachining process without any extra process required. A partially split cantilever configuration is developed for the lateral force detection. The piezoresistors are self-aligned to the split cantilever, and therefore the width of the beam is only limited by lithography. Consequently, this kind of cantilever potentially has a high resolution. The preliminary experimental results show expected performances of the fabricated piezoresistors and electronic circuits

Epitaxial NbN/AlN/NbN tunnel junctions on Si substrates with TiN buffer layers

Directory of Open Access Journals (Sweden)

Rui Sun

2016-06-01

Full Text Available We have developed epitaxial NbN/AlN/NbN tunnel junctions on Si (100 substrates with a TiN buffer layer. A 50-nm-thick (200-oriented TiN thin film was introduced as the buffer layer for epitaxial growth of NbN/AlN/NbN trilayers on Si substrates. The fabricated NbN/AlN/NbN junctions demonstrated excellent tunneling properties with a high gap voltage of 5.5 mV, a large IcRN product of 3.8 mV, a sharp quasiparticle current rise with a ΔVg of 0.4 mV, and a small subgap leakage current. The junction quality factor Rsg/RN was about 23 for the junction with a Jc of 47 A/cm2 and was about 6 for the junction with a Jc of 3.0 kA/cm2. X-ray diffraction and transmission electron microscopy observations showed that the NbN/AlN/NbN trilayers were grown epitaxially on the (200-orientated TiN buffer layer and had a highly crystalline structure with the (200 orientation.

Epitaxial NbN/AlN/NbN tunnel junctions on Si substrates with TiN buffer layers

Energy Technology Data Exchange (ETDEWEB)

Sun, Rui [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences (CAS), Shanghai 200050 (China); University of Chinese Academy of Sciences, Beijing 100049 (China); Makise, Kazumasa; Terai, Hirotaka [Advanced ICT Research Institute, National Institute of Information and Communications Technology (Japan); Zhang, Lu [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences (CAS), Shanghai 200050 (China); Wang, Zhen, E-mail: zwang@mail.sim.ac.cn [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences (CAS), Shanghai 200050 (China); University of Chinese Academy of Sciences, Beijing 100049 (China); Shanghai Tech University, Shanghai 201210 (China)

2016-06-15

We have developed epitaxial NbN/AlN/NbN tunnel junctions on Si (100) substrates with a TiN buffer layer. A 50-nm-thick (200)-oriented TiN thin film was introduced as the buffer layer for epitaxial growth of NbN/AlN/NbN trilayers on Si substrates. The fabricated NbN/AlN/NbN junctions demonstrated excellent tunneling properties with a high gap voltage of 5.5 mV, a large I{sub c}R{sub N} product of 3.8 mV, a sharp quasiparticle current rise with a ΔV{sub g} of 0.4 mV, and a small subgap leakage current. The junction quality factor R{sub sg}/R{sub N} was about 23 for the junction with a J{sub c} of 47 A/cm{sup 2} and was about 6 for the junction with a J{sub c} of 3.0 kA/cm{sup 2}. X-ray diffraction and transmission electron microscopy observations showed that the NbN/AlN/NbN trilayers were grown epitaxially on the (200)-orientated TiN buffer layer and had a highly crystalline structure with the (200) orientation.

State of the art of UO2 fuel fabrication processes

International Nuclear Information System (INIS)

Henke, M.; Klemm, U.

1980-01-01

Starting from the need of UO 2 for thermal power reactors in the period from 1980 to 1990 and the role of UF 6 conversion into UO 2 within the fuel cycle, the state-of-the-art of the three established industrial processes - ADU process, AUC process, IDR process - is assessed. The number of process stages and requirements on process management are discussed. In particular, the properties of the fabricated UO 2 powders, their influence on the following pellet production and on operational behaviour of the fuel elements under reactor conditions are described. Hence, an evaluation of the three essential conversion processes is derived. (author)

Closed-Loop Process Control for Electron Beam Freeform Fabrication and Deposition Processes

Science.gov (United States)

Taminger, Karen M. (Inventor); Hafley, Robert A. (Inventor); Martin, Richard E. (Inventor); Hofmeister, William H. (Inventor)

2013-01-01

A closed-loop control method for an electron beam freeform fabrication (EBF(sup 3)) process includes detecting a feature of interest during the process using a sensor(s), continuously evaluating the feature of interest to determine, in real time, a change occurring therein, and automatically modifying control parameters to control the EBF(sup 3) process. An apparatus provides closed-loop control method of the process, and includes an electron gun for generating an electron beam, a wire feeder for feeding a wire toward a substrate, wherein the wire is melted and progressively deposited in layers onto the substrate, a sensor(s), and a host machine. The sensor(s) measure the feature of interest during the process, and the host machine continuously evaluates the feature of interest to determine, in real time, a change occurring therein. The host machine automatically modifies control parameters to the EBF(sup 3) apparatus to control the EBF(sup 3) process in a closed-loop manner.

Fabrication of Copper-Rich Cu-Al Alloy Using the Wire-Arc Additive Manufacturing Process

Science.gov (United States)

Dong, Bosheng; Pan, Zengxi; Shen, Chen; Ma, Yan; Li, Huijun

2017-12-01

An innovative wire-arc additive manufacturing (WAAM) process is used to fabricate Cu-9 at. pct Al on pure copper plates in situ, through separate feeding of pure Cu and Al wires into a molten pool, which is generated by the gas tungsten arc welding (GTAW) process. After overcoming several processing problems, such as opening the deposition molten pool on the extremely high-thermal conductive copper plate and conducting the Al wire into the molten pool with low feed speed, the copper-rich Cu-Al alloy was successfully produced with constant predesigned Al content above the dilution-affected area. Also, in order to homogenize the as-fabricated material and improve the mechanical properties, two further homogenization heat treatments at 1073 K (800 °C) and 1173 K (900 °C) were applied. The material and mechanical properties of as-fabricated and heat-treated samples were compared and analyzed in detail. With increased annealing temperatures, the content of precipitate phases decreased and the samples showed gradual improvements in both strength and ductility with little variation in microstructures. The present research opened a gate for in-situ fabrication of Cu-Al alloy with target chemical composition and full density using the additive manufacturing process.

P-N junction solar cell grown by molecular beam epitaxy

International Nuclear Information System (INIS)

Hazrati Fard, M.

2001-01-01

Growth of GaAs epilayers by Molecular Beam Epitaxy was accomplished for the first time in Iran. The layers were grown on GaAs (001) substrates (p+ wafer) with Si impurity for p n junction solar cell fabrication at a rate of nearly one micron per hour and 0.25 micron per quarter. Crystalline quality of grown layers had been monitored during growth by Reflection High Energy Electron Diffraction system. Doping profile and layer thickness was assessed by electrochemical C-V profiling method. Then Hall measurements were conducted on small samples both in room temperature and liquid nitrogen temperature so giving average carrier concentration and compensation ratio. The results as like: V oc , I sc , F F, η were comparable with other laboratory reports. information for obtaining good and repeatable growths was collected. Therefore, the conditions of repeatable quality growth p n junction solar cells onto GaAs (001) substrates were determined

Fabrication technology for lead-alloy Josephson devices for high-density integrated circuits

International Nuclear Information System (INIS)

Imamura, T.; Hoko, H.; Tamura, H.; Yoshida, A.; Suzuki, H.; Morohashi, S.; Ohara, S.; Hasuo, S.; Yamaoka, T.

1986-01-01

Fabrication technology for lead-alloy Josephson devices was evaluated from the viewpoint of application to large-scale integrated circuits. Metal and insulating layers used in the circuits were evaluated, and optimization of techniques for deposition or formation of these layers was investigated. Metallization of the Pb-In-Au base electrode and the Pb-Bi counterelectrode was studied in terms of optimizing the deposited films, to improve the reliability of junction electrodes. The formation of the oxide barrier was studied by in situ ellipsometry. SiO/sub x/ deposited in oxygen was developed as the insulation layer with less defect density than conventional SiO. A liftoff technique using toluene soaking was developed, and patterns with a minimum line width of 2 μm were consistently reproduced. The characteristics of each element in the circuits were evaluated for test vehicles. For the junction, the following items were evaluated: controllability of the critical current I/sub c/, junction quality, I/sub c/ uniformity, junction yield, and thermal cycling and storage stability. For the peripheral elements, integrity of lines and contacts, and characteristics of resistors were evaluated. 8-kbit memory cell arrays with a full vertical structure were fabricated to evaluate these technologies in combination. The continuity of each metal layer and insulation between metal layers were evaluated with an autoprober at room temperature. For selected chips, cell characteristics have been measured, and their I/sub c/ uniformity and production yields for cells are discussed. Normal operation of the memory cells was confirmed for all of the 24 accessible cells on a chip

Experiments on the interaction between long Josephson junctions and a coplanar strip resonator

DEFF Research Database (Denmark)

Davidson, A.; Pedersen, Niels Falsig

1992-01-01

Experiments are reported on a new geometry designed to couple long Josephson junction fluxon oscillators to a resonant cavity. The junctions were made with a niobium-aluminum oxide-niobium trilayer process with a critical-current density of around 1000 A/cm2. Various numbers of such junctions wer...

High-quality planar high-Tc Josephson junctions

International Nuclear Information System (INIS)

Bergeal, N.; Grison, X.; Lesueur, J.; Faini, G.; Aprili, M.; Contour, J.P.

2005-01-01

Reproducible high-T c Josephson junctions have been made in a rather simple two-step process using ion irradiation. A microbridge (1 to 5 μm wide) is firstly designed by ion irradiating a c-axis-oriented YBa 2 Cu 3 O 7-δ film through a gold mask such as the nonprotected part becomes insulating. A lower T c part is then defined within the bridge by irradiating with a much lower fluence through a narrow slit (20 nm) opened in a standard electronic photoresist. These planar junctions, whose settings can be finely tuned, exhibit reproducible and nearly ideal Josephson characteristics. This process can be used to produce complex Josephson circuits

Towards Polarization Diversity on the SOI Platform With Simple Fabrication Process

DEFF Research Database (Denmark)

Ding, Yunhong; Liu, Liu; Peucheret, Christophe

2011-01-01

We present a polarization diversity circuit built on the silicon-on-insulator (SOI) platform, which can be fabricated by a simple process. The polarization diversity is based on two identical air-clad asymmetrical directional couplers, which simultaneously play the roles of polarization splitter...... and rotator. A silicon polarization diversity circuit with a single microring resonator is fabricated on the SOI platform. Only ${1-dB polarization-dependent loss is demonstrated. A significant improvement of the polarization dependence is obtained for 20-Gb/s nonreturn-to-zero differential phase-shift keying...

Electrical characterization of the ITO/NiPc/PEDOT : PSS junction diode

Energy Technology Data Exchange (ETDEWEB)

Shah, Mutabar; Sayyad, M H; Karimov, Kh S; Wahab, Fazal, E-mail: mutabar_shah@hotmail.co, E-mail: mutabarshah@gmail.co [Ghulam Ishaq Khan Institute of Engineering Sciences and Technology, Topi, District Swabi, Khyber Pakhtunkhwa 23640 (Pakistan)

2010-10-13

This paper reports on the fabrication and characterization of an ITO/NiPc/PEDOT : PSS junction diode. A thin film of nickel phthalocyanine (NiPc) was deposited by the thermal vacuum deposition method on indium tin oxide (ITO) used as a substrate. The current-voltage characteristics of the diode were measured at room temperature under dark condition and showed rectifying behaviour. The values of several electrical parameters such as ideality factor, barrier height, conductivity, and series and shunt resistances were calculated.

Development of Nb nanoSQUIDs based on SNS junctions for operation in high magnetic fields

Energy Technology Data Exchange (ETDEWEB)

Morosh, Viacheslav; Kieler, Oliver; Weimann, Thomas; Zorin, Alexander [Physikalisch-Technische Bundesanstalt (PTB), Braunschweig (Germany); Mueller, Benedikt; Martinez-Perez, Maria Jose; Kleiner, Reinhold; Koelle, Dieter [Physikalisches Institut and Center for Quantum Science in LISA+, Universitaet Tuebingen (Germany)

2016-07-01

Investigation of the magnetization reversal of single magnetic nanoparticles requires SQUIDs with high spatial resolution, high spin sensitivity (a few Bohr magneton μ{sub B}) and at the same time sufficient stability in high magnetic fields. We fabricated dc nanoSQUIDs comprising overdamped SNS sandwich-type (Nb/HfTi/Nb) Josephson junctions using optimized technology based on combination of electron beam lithography and chemical-mechanical polishing. Our nanoSQUIDs have Josephson junctions with lateral dimensions ≤ 150 nm x 150 nm, effective loop areas < 0.05 μm{sup 2} and the distance between the Josephson junctions ≤ 100 nm. The feeding strip lines of the width ≤ 200 nm have been realized. The nanoSQUIDs have shown stable operation in external magnetic fields at least up to 250 mT. Sufficiently low level of flux noise resulting in spin sensitivity of few tens μ{sub B}/Hz{sup 1/2} has been demonstrated. A further reduction of the nanoSQUID size using our technology is possible.

Fabrication of metal matrix composite by semi-solid powder processing

Energy Technology Data Exchange (ETDEWEB)

Wu, Yufeng [Iowa State Univ., Ames, IA (United States)

2011-01-01

Various metal matrix composites (MMCs) are widely used in the automotive, aerospace and electrical industries due to their capability and flexibility in improving the mechanical, thermal and electrical properties of a component. However, current manufacturing technologies may suffer from insufficient process stability and reliability and inadequate economic efficiency and may not be able to satisfy the increasing demands placed on MMCs. Semi-solid powder processing (SPP), a technology that combines traditional powder metallurgy and semi-solid forming methods, has potential to produce MMCs with low cost and high efficiency. In this work, the analytical study and experimental investigation of SPP on the fabrication of MMCs were explored. An analytical model was developed to understand the deformation mechanism of the powder compact in the semi-solid state. The densification behavior of the Al6061 and SiC powder mixtures was investigated with different liquid fractions and SiC volume fractions. The limits of SPP were analyzed in terms of reinforcement phase loading and its impact on the composite microstructure. To explore adoption of new materials, carbon nanotube (CNT) was investigated as a reinforcing material in aluminum matrix using SPP. The process was successfully modeled for the mono-phase powder (Al6061) compaction and the density and density distribution were predicted. The deformation mechanism at low and high liquid fractions was discussed. In addition, the compaction behavior of the ceramic-metal powder mixture was understood, and the SiC loading limit was identified by parametric study. For the fabrication of CNT reinforced Al6061 composite, the mechanical alloying of Al6061-CNT powders was first investigated. A mathematical model was developed to predict the CNT length change during the mechanical alloying process. The effects of mechanical alloying time and processing temperature during SPP were studied on the mechanical, microstructural and

Insulator-protected mechanically controlled break junctions for measuring single-molecule conductance in aqueous environments

Science.gov (United States)

Muthusubramanian, N.; Galan, E.; Maity, C.; Eelkema, R.; Grozema, F. C.; van der Zant, H. S. J.

2016-07-01

We present a method to fabricate insulated gold mechanically controlled break junctions (MCBJ) by coating the metal with a thin layer of aluminum oxide using plasma enhanced atomic layer deposition. The Al2O3 thickness deposited on the MCBJ devices was varied from 2 to 15 nm to test the suppression of leakage currents in deionized water and phosphate buffered saline. Junctions coated with a 15 nm thick oxide layer yielded atomically sharp electrodes and negligible conductance counts in the range of 1 to 10-4 G0 (1 G0 = 77 μS), where single-molecule conductances are commonly observed. The insulated devices were used to measure the conductance of an amphiphilic oligophenylene ethynylene derivative in deionized water.

Junction Potentials Bias Measurements of Ion Exchange Membrane Permselectivity.