Contribution to the theoretical and experimental study of the electron-volt effect in N-P junctions

International Nuclear Information System (INIS)

Nguyen Van, Dong

1959-07-01

The proposed aim of this work is to study the behaviour of a semi-conducting junction under the action of β radiation. These studies were directed on the one hand to direct conversion of the energy radiated by a radioactive source to electric energy usable by means of N-P junctions, and on the other hand to the kinetics of defects produced in the semi-conductor crystals by high energy β rays. In the first part of this work, an attempt has been made to complete the earlier theories of the electron-volt effect in junctions by analysing the effect mathematically. This has led to a single equation containing the electrical and geometric parameters of the semi-conductor and of the junction, and the properties of the incident radiation. Apart from this, the diffusion current of the charge carriers created by the bombardment has been studied in more detail, taking into account all the factors which play a part in the expression of the efficiency of charge collection of a junction. In the second part, where experiments on the irradiation of N-P junctions have been carried out with a 90 Sr- 90 Y source, mention is made of the particular advantages of a gallium arsenide junction capable of operating at relatively high temperatures (in the region of 100 deg. C). The third part presents the study of defects created in a semi-conductor crystal by high-energy β rays, according to the method of electron-volt effect. It is shown here that from a study of the degradation of the short-circuit current of the junction it may be possible to determine the recombination level and the probabilities of electron and hole capture, as from a study of the lifetime decay of minority carriers in a crystal of known type. Experiments on the bombardment of Ge junctions by 2 MeV electrons were performed with a Van de Graaff. Very clear anomalies of the electron-volt effect at 100 deg. K were observed. An attempt was made at interpretation of these anomalies in the junction, taking into account

Effect of junction configurations on microdroplet formation in a T-junction microchannel

Science.gov (United States)

Lih, F. L.; Miao, J. M.

2015-03-01

This study investigates the dynamic formation process of water microdroplets in a silicon oil flow in a T-junction microchannel. Segmented water microdroplets are formed at the junction when the water flow is perpendicularly injected into the silicon oil flow in a straight rectangular microchannel. This study further presents the effects of the water flow inlet geometry on hydrodynamic characteristics of water microdroplet formation. A numerical multiphase volume of fluid (VOF) scheme is coupled to solve the unsteady three-dimensional laminar Navier-Stokes equations to depict the droplet formation phenomena at the junction. Predicted results on the length and generated frequency of the microdroplets agree well with experimental results in a T-junction microchannel with straight and flat inlets (the base model) for both fluid flows. Empirical correlations are reported between the volumetric flow ratio and the dimensionless microdroplet length or dimensionless frequency of droplet generation at a fixed capillary number of 4.7 · 10-3. The results of this study indicate a reduction in the droplet length of approximately 21% if the straight inlet for the water flow is modified to a downstream sudden contraction inlet for the water flow.

Superconducting proximity effect in mesoscopic superconductor/normal-metal junctions

CERN Document Server

Takayanagi, H; Toyoda, E

1999-01-01

The superconducting proximity effect is discussed in mesoscopic superconductor/normal-metal junctions. The newly-developed theory shows long-range phase-coherent effect which explaines early experimental results of giant magnetoresistance oscillations in an Andreev interferometer. The theory also shows that the proximity correction to the conductance (PCC) has a reentrant behavior as a function of energy. The reentrant behavior is systematically studied in a gated superconductor-semiconductor junction. A negative PCC is observed in the case of a weak coupling between the normal metal and the external reservoir. Phase coherent ac effect is also observed when rf is irradiated to the junction.

Variability study of Si nanowire FETs with different junction gradients

Directory of Open Access Journals (Sweden)

Jun-Sik Yoon

2016-01-01

Full Text Available Random dopant fluctuation effects of gate-all-around Si nanowire field-effect transistors (FETs are investigated in terms of different diameters and junction gradients. The nanowire FETs with smaller diameters or shorter junction gradients increase relative variations of the drain currents and the mismatch of the drain currents between source-drain and drain-source bias change in the saturation regime. Smaller diameters decreased current drivability critically compared to standard deviations of the drain currents, thus inducing greater relative variations of the drain currents. Shorter junction gradients form high potential barriers in the source-side lightly-doped extension regions at on-state, which determines the magnitude of the drain currents and fluctuates the drain currents greatly under thermionic-emission mechanism. On the other hand, longer junction gradients affect lateral field to fluctuate the drain currents greatly. These physical phenomena coincide with correlations of the variations between drain currents and electrical parameters such as threshold voltages and parasitic resistances. The nanowire FETs with relatively-larger diameters and longer junction gradients without degrading short channel characteristics are suggested to minimize the relative variations and the mismatch of the drain currents.

A comparison of degradation in three amorphous silicon PV module technologies

Energy Technology Data Exchange (ETDEWEB)

Radue, C.; van Dyk, E.E. [Physics Department, PO Box 77000, Nelson Mandela Metropolitan University, Port Elizabeth 6031 (South Africa)

2010-03-15

Three commercial amorphous silicon modules manufactured by monolithic integration and consisting of three technology types were analysed in this study. These modules were deployed outdoors for 14 months and underwent degradation. All three modules experienced the typical light-induced degradation (LID) described by the Staebler-Wronski effect, and this was followed by further degradation. A 14 W single junction amorphous silicon module degraded by about 45% of the initial measured maximum power output (P{sub MAX}) at the end of the study. A maximum of 30% of this has been attributed to LID and the further 15% to cell mismatch and cell degradation. The other two modules, a 64 W triple junction amorphous silicon module, and a 68 W flexible triple junction amorphous silicon module, exhibited LID followed by seasonal variation in the degraded P{sub MAX}. The 64 W module showed a maximum degradation in P{sub MAX} of about 22%. This is approximately 4% more than the manufacturer allowed for the initial LID. However, the seasonal variation in P{sub MAX} seems to be centred around the manufacturer's rating ({+-}4%). The 68 W flexible module has shown a maximum decrease in P{sub MAX} of about 27%. This decrease is about 17% greater than the manufacturer allowed for the initial LID. (author)

Effect of solar-cell junction geometry on open-circuit voltage

Science.gov (United States)

Weizer, V. G.; Godlewski, M. P.

1985-01-01

Simple analytical models have been found that adequately describe the voltage behavior of both the stripe junction and dot junction grating cells as a function of junction area. While the voltage in the former case is found to be insensitive to junction area reduction, significant voltage increases are shown to be possible for the dot junction cell. With regard to cells in which the junction area has been increased in a quest for better performance, it was found that (1) texturation does not affect the average saturation current density J0, indicating that the texturation process is equivalent to a simple extension of junction area by a factor of square root of 3 and (2) the vertical junction cell geometry produces a sizable decrease in J0 that, unfortunately, is more than offset by the effects of attendant areal increases.

Chirality effect in disordered graphene ribbon junctions

International Nuclear Information System (INIS)

Long Wen

2012-01-01

We investigate the influence of edge chirality on the electronic transport in clean or disordered graphene ribbon junctions. By using the tight-binding model and the Landauer-Büttiker formalism, the junction conductance is obtained. In the clean sample, the zero-magnetic-field junction conductance is strongly chirality-dependent in both unipolar and bipolar ribbons, whereas the high-magnetic-field conductance is either chirality-independent in the unipolar or chirality-dependent in the bipolar ribbon. Furthermore, we study the disordered sample in the presence of magnetic field and find that the junction conductance is always chirality-insensitive for both unipolar and bipolar ribbons with adequate disorders. In addition, the disorder-induced conductance plateaus can exist in all chiral bipolar ribbons provided the disorder strength is moderate. These results suggest that we can neglect the effect of edge chirality in fabricating electronic devices based on the magnetotransport in a disordered graphene ribbon. (paper)

Temporal correlations and structural memory effects in break junction measurements

DEFF Research Database (Denmark)

Magyarkuti, A.; Lauritzen, Kasper Primdal; Balogh, Zoltan Imre

2017-01-01

that correlations between the opening and subsequent closing traces may indicate structural memory effects in atomic-sized metallic and molecular junctions. Applying these methods on measured and simulated gold metallic contacts as a test system, we show that the surface diffusion induced flattening of the broken......-molecule junctions, we demonstrate pronounced contact memory effects and recovery of the molecule for junctions breaking before atomic chains are formed. However, if chains are pulled the random relaxation of the chain and molecule after rupture prevents opening-closing correlations....

Inhibition of connexin43 gap junction channels by the endocrine disruptor ioxynil

International Nuclear Information System (INIS)

Leithe, Edward; Kjenseth, Ane; Bruun, Jarle; Sirnes, Solveig; Rivedal, Edgar

2010-01-01

Gap junctions are intercellular plasma membrane domains containing channels that mediate transport of ions, metabolites and small signaling molecules between adjacent cells. Gap junctions play important roles in a variety of cellular processes, including regulation of cell growth and differentiation, maintenance of tissue homeostasis and embryogenesis. The constituents of gap junction channels are a family of trans-membrane proteins called connexins, of which the best-studied is connexin43. Connexin43 functions as a tumor suppressor protein in various tissue types and is frequently dysregulated in human cancers. The pesticide ioxynil has previously been shown to act as an endocrine disrupting chemical and has multiple effects on the thyroid axis. Furthermore, both ioxynil and its derivative ioxynil octanoate have been reported to induce tumors in animal bioassays. However, the molecular mechanisms underlying the possible tumorigenic effects of these compounds are unknown. In the present study we show that ioxynil and ioxynil octanoate are strong inhibitors of connexin43 gap junction channels. Both compounds induced rapid loss of connexin43 gap junctions at the plasma membrane and increased connexin43 degradation. Ioxynil octanoate, but not ioxynil, was found to be a strong activator of ERK1/2. The compounds also had different effects on the phosphorylation status of connexin43. Taken together, the data show that ioxynil and ioxynil octanoate are potent inhibitors of intercellular communication via gap junctions.

Tuning the thermal conductance of molecular junctions with interference effects

Science.gov (United States)

Klöckner, J. C.; Cuevas, J. C.; Pauly, F.

2017-12-01

We present an ab initio study of the role of interference effects in the thermal conductance of single-molecule junctions. To be precise, using a first-principles transport method based on density functional theory, we analyze the coherent phonon transport in single-molecule junctions made of several benzene and oligo(phenylene ethynylene) derivatives. We show that the thermal conductance of these junctions can be tuned via the inclusion of substituents, which induces destructive interference effects and results in a decrease of the thermal conductance with respect to the unmodified molecules. In particular, we demonstrate that these interference effects manifest as antiresonances in the phonon transmission, whose energy positions can be tuned by varying the mass of the substituents. Our work provides clear strategies for the heat management in molecular junctions and, more generally, in nanostructured metal-organic hybrid systems, which are important to determine how these systems can function as efficient energy-conversion devices such as thermoelectric generators and refrigerators.

Dielectric effect on electric fields in the vicinity of the metal–vacuum–dielectric junction

International Nuclear Information System (INIS)

Chung, M.S.; Mayer, A.; Miskovsky, N.M.; Weiss, B.L.; Cutler, P.H.

2013-01-01

The dielectric effect was theoretically investigated in order to describe the electric field in the vicinity of a junction of a metal, dielectric, and vacuum. The assumption of two-dimensional symmetry of the junction leads to a simple analytic form and to a systematic numerical calculation for the field. The electric field obtained for the triple junction was found to be enhanced or reduced according to a certain criterion determined by the contact angles and dielectric constant. Further numerical calculations of the dielectric effect show that an electric field can experience a larger enhancement or reduction for a quadruple junction than that achieved for the triple junction. It was also found that even though it changes slowly in comparison with the shape effect, the dielectric effect was noticeably large over the entire range of the shape change. - Highlights: ► This work explains how a very strong electric field can be produced due to the dielectric in the vicinity of metal–dielectric contact. ► This work deals with configurations which enhance electric fields using the dielectric effect. The configuration is a type of junction at which metal, vacuum and dielectric meet. ► This work suggests the criterion to determine whether field enhancement occurs or not in the triple junction of metal, vacuum and dielectric. ► This work suggests that a quadruple junction is more effective in enhancing the electric field than a triple junction. The quadruple junction is formed by an additional vacuum portion to the triple junction. ► This work suggests that a triple junction can be a breakthrough candidate for a cold electron source

From four- to two-channel Kondo effect in junctions of XY spin chains

Energy Technology Data Exchange (ETDEWEB)

Giuliano, Domenico, E-mail: domenico.giuliano@fis.unical.it [Dipartimento di Fisica, Università della Calabria, Arcavacata di Rende I-87036, Cosenza (Italy); INFN, Gruppo collegato di Cosenza, Arcavacata di Rende I-87036, Cosenza (Italy); Sodano, Pasquale, E-mail: pasquale.sodano02@gmail.com [International Institute of Physics, Universidade Federal do Rio Grande do Norte, 59078-400 Natal, RN (Brazil); Departemento de Física Teorica e Experimental, Universidade Federal do Rio Grande do Norte, 59072-970 Natal, RN (Brazil); Tagliacozzo, Arturo, E-mail: arturo.tagliacozzo@na.infn.it [INFN, Gruppo collegato di Cosenza, Arcavacata di Rende I-87036, Cosenza (Italy); Dipartimento di Fisica, Università di Napoli “Federico II”, Monte S. Angelo-Via Cintia, I-80126 Napoli (Italy); CNR-SPIN, Monte S. Angelo-Via Cintia, I-80126 Napoli (Italy); Trombettoni, Andrea, E-mail: andreatr@sissa.it [CNR-IOM DEMOCRITOS Simulation Center, Via Bonomea 265, I-34136 Trieste (Italy); SISSA and INFN, Sezione di Trieste, Via Bonomea 265, I-34136 Trieste (Italy)

2016-08-15

We consider the Kondo effect in Y-junctions of anisotropic XY models in an applied magnetic field along the critical lines characterized by a gapless excitation spectrum. We find that, while the boundary interaction Hamiltonian describing the junction can be recasted in the form of a four-channel, spin-1/2 antiferromagnetic Kondo Hamiltonian, the number of channels effectively participating in the Kondo effect depends on the chain parameters, as well as on the boundary couplings at the junction. The system evolves from an effective four-channel topological Kondo effect for a junction of XX-chains with symmetric boundary couplings into a two-channel one at a junction of three quantum critical Ising chains. The effective number of Kondo channels depends on the properties of the boundary and of the bulk. The XX-line is a “critical” line, where a four-channel topological Kondo effect can be recovered by fine-tuning the boundary parameter, while along the line in parameter space connecting the XX-line and the critical Ising point the junction is effectively equivalent to a two-channel topological Kondo Hamiltonian. Using a renormalization group approach, we determine the flow of the boundary couplings, which allows us to define and estimate the critical couplings and Kondo temperatures of the different Kondo (pair) channels. Finally, we study the local transverse magnetization in the center of the Y-junction, eventually arguing that it provides an effective tool to monitor the onset of the two-channel Kondo effect.

From four- to two-channel Kondo effect in junctions of XY spin chains

International Nuclear Information System (INIS)

Giuliano, Domenico; Sodano, Pasquale; Tagliacozzo, Arturo; Trombettoni, Andrea

2016-01-01

We consider the Kondo effect in Y-junctions of anisotropic XY models in an applied magnetic field along the critical lines characterized by a gapless excitation spectrum. We find that, while the boundary interaction Hamiltonian describing the junction can be recasted in the form of a four-channel, spin-1/2 antiferromagnetic Kondo Hamiltonian, the number of channels effectively participating in the Kondo effect depends on the chain parameters, as well as on the boundary couplings at the junction. The system evolves from an effective four-channel topological Kondo effect for a junction of XX-chains with symmetric boundary couplings into a two-channel one at a junction of three quantum critical Ising chains. The effective number of Kondo channels depends on the properties of the boundary and of the bulk. The XX-line is a “critical” line, where a four-channel topological Kondo effect can be recovered by fine-tuning the boundary parameter, while along the line in parameter space connecting the XX-line and the critical Ising point the junction is effectively equivalent to a two-channel topological Kondo Hamiltonian. Using a renormalization group approach, we determine the flow of the boundary couplings, which allows us to define and estimate the critical couplings and Kondo temperatures of the different Kondo (pair) channels. Finally, we study the local transverse magnetization in the center of the Y-junction, eventually arguing that it provides an effective tool to monitor the onset of the two-channel Kondo effect.

Junction structures based on the high-Tc superconductor YBa2Cu3O7-δ

International Nuclear Information System (INIS)

Gijs, M.A.M.

1993-01-01

An overview is given of the investigations of the Josephson effect in junction structures based on the high-T c superconductor YBa 2 Cu 3 O 7-δ , which were carried out at the Philips Research Laboratories in Eindhoven in the 1988-1990 period. The reported results are presented in their international scientific context, without attempting a complete review of the subject. However, the various junction types studied give a good idea of the scientific pursuits of high-T c junction researchers in this period. The following junctions are considered: in the category of 'weak link'-type junctions we have investigated YBa 2 Cu 3 O 7-δ -Ag-Nb point contact junctions, YBa 2 Cu 3 O 7-δ Dayem bridges and YBa 2 Cu 3 O 7-δ -Ag(-Al)-Pb proximity junctions. In these structures we combine a high-T c with a low-T c superconductor. We also fabricated planar 'all high-T c ' YBa 2 Cu 3 O 7-δ -Ag-YBa 2 Cu 3 O 7-δ junctions using a submicron structuring process. Next we have made tunnel junctions to study density of states effects of the high-T c superconductor : YBa 2 Cu 3 O 7-δ -Pb junctions using the degraded YBa 2 Cu 3 O 7-δ -Pb interface as a tunnel barrier, and YBa 2 Cu 3 O 7-δ -Ag-Al/Al 2 O 3 /Pb tunnel junctions based on the superconducting proximity effect. Our junction structures are electrically characterized and mostly studied in microwave and magnetic fields. Results are compared with current theoretical models. (orig.)

Effect of quasi-particle injection on retrapping current of Josephson junction

OpenAIRE

Utsunomiya, K.; Yagi, Ryuta

2006-01-01

We report that the energy dissipation of Josephson junction can be controlled by quasi-particle injection. We fabricated two Josephson junctions on the narrow aluminum wire and controlled the energy dissipation of one junction by quasi-particle injection from the other. We observed the retrapping current increased as the quasi-particles were injected. We also studied the heating effect of our measurement.

From four- to two-channel Kondo effect in junctions of XY spin chains

Directory of Open Access Journals (Sweden)

Domenico Giuliano

2016-08-01

Full Text Available We consider the Kondo effect in Y-junctions of anisotropic XY models in an applied magnetic field along the critical lines characterized by a gapless excitation spectrum. We find that, while the boundary interaction Hamiltonian describing the junction can be recasted in the form of a four-channel, spin-1/2 antiferromagnetic Kondo Hamiltonian, the number of channels effectively participating in the Kondo effect depends on the chain parameters, as well as on the boundary couplings at the junction. The system evolves from an effective four-channel topological Kondo effect for a junction of XX-chains with symmetric boundary couplings into a two-channel one at a junction of three quantum critical Ising chains. The effective number of Kondo channels depends on the properties of the boundary and of the bulk. The XX-line is a “critical” line, where a four-channel topological Kondo effect can be recovered by fine-tuning the boundary parameter, while along the line in parameter space connecting the XX-line and the critical Ising point the junction is effectively equivalent to a two-channel topological Kondo Hamiltonian. Using a renormalization group approach, we determine the flow of the boundary couplings, which allows us to define and estimate the critical couplings and Kondo temperatures of the different Kondo (pair channels. Finally, we study the local transverse magnetization in the center of the Y-junction, eventually arguing that it provides an effective tool to monitor the onset of the two-channel Kondo effect.

Spin-flip effects on the supercurrent through mesoscopic superconducting junctions

International Nuclear Information System (INIS)

Pan Hui; Lin Tsunghan

2005-01-01

We investigate the spin-flip effects on the Andreev bound states and the supercurrent in a superconductor/quantum-dot/superconductor system, theoretically. The spin-flip scattering in the quantum dot can reverse the supercurrent flowing through the system, which results in a π-junction transition. By controlling the energy level of the quantum dot, the π-junction transition can be caused to occur again. The two mechanisms of the π-junction transitions are interpreted within the picture of Andreev bound states

Effect of surface losses on soliton propagation in Josephson junctions

DEFF Research Database (Denmark)

Davidson, A.; Pedersen, Niels Falsig; Pagano, S.

1986-01-01

We have explored numerically the effects on soliton propagation of a third order damping term in the modified sine-Gordon equation. In Josephson tunnel junctions such a term corresponds physically to quasiparticle losses within the metal electrodes of the junction. We find that this loss term pla...

Impurity scattering effect on charge transport in high-Tc cuprate junctions

International Nuclear Information System (INIS)

Tanaka, Y.; Asano, Y.; Kashiwaya, S.

2004-01-01

It is known that the zero-bias conductance peak (ZBCP) is expected in tunneling spectra of normal-metal/high-Tc cuprate junctions because of the formation of the midgap Andreev resonant states (MARS) at junction interfaces. In the present review, we report the recent theoretical study of impurity scattering effects on the tunneling spectroscopy. In the former part of the present paper, we discuss impurity effects in normal metal. We calculate tunneling conductance for diffusive normal metal (DN)/high Tc cuprate junctions based on the Keldysh Green's function technique. Besides the ZBCP due to the MARS, we can expect ZBCP caused by the different origin, i.e., the coherent Andreev reflection (CAR) assisted by the proximity effect in DN. Their relative importance depends on the angle a between the interface normal and the crystal axis of high-Tc superconductors. At α = 0, we find the ZBCP by the CAR for low transparent junctions with small Thouless energies in DN; this is similar to the case of diffusive normal metal/insulator/s-wave superconductor junctions. Under increase of α from zero to π/4, the contribution of MARS to ZBCP becomes more prominent and the effect of the CAR is gradually suppressed. Such complex spectral features would be observable in conductance spectra of high-Tc junctions at very low temperatures. In the latter part of our paper, we study impurity effects in superconductors. We consider impurities near the junction interface on the superconductor side. The conductance is calculated from the Andreev and the normal reflection coefficients which are estimated by using the single-site approximation in an analytic calculation and by the recursive Green function method in a numerical simulation. We find splitting of the ZBCP in the presence of the time reversal symmetry. Thus the zero-field splitting of ZBCP in the experiment does not perfectly prove an existence of broken time reversal symmetry state

Electrical characterization of commercial NPN bipolar junction transistors under neutron and gamma irradiation

Directory of Open Access Journals (Sweden)

OO Myo Min

2014-01-01

Full Text Available Electronics components such as bipolar junction transistors, diodes, etc. which are used in deep space mission are required to be tolerant to extensive exposure to energetic neutrons and ionizing radiation. This paper examines neutron radiation with pneumatic transfer system of TRIGA Mark-II reactor at the Malaysian Nuclear Agency. The effects of the gamma radiation from Co-60 on silicon NPN bipolar junction transistors is also be examined. Analyses on irradiated transistors were performed in terms of the electrical characteristics such as current gain, collector current and base current. Experimental results showed that the current gain on the devices degraded significantly after neutron and gamma radiations. Neutron radiation can cause displacement damage in the bulk layer of the transistor structure and gamma radiation can induce ionizing damage in the oxide layer of emitter-base depletion layer. The current gain degradation is believed to be governed by the increasing recombination current in the base-emitter depletion region.

Search for a proximity effect induced gap in gold/high Tc junctions

International Nuclear Information System (INIS)

Dessau, D.S.; Wells, B.O.; Shen, Z.; Spicer, W.E.; Arko, A.J.; List, R.S.; Olson, C.G.; Eom, C.B.; Mitzi, D.B.; Kapitulnik, A.; Geballe, T.H.

1991-01-01

We have used high-resolution photoemission spectroscopy to search for a proximity effect induced superconducting gap in gold overlayers on c-axis single crystals of Bi 2 Sr 2 CaCu 2 O 8 and a-axis thin films of YBa 2 Cu 3 O 7 . These two junction types give us a representative sampling of very well characterized near-ideal interfaces (gold/c-axis Bi 2 Sr 2 CaCu 2 O 8 ) and junctions in which the geometry more strongly favors the existence of the proximity effect but the interfacial quality may not be as ideal (gold/a-axis YBa 2 Cu 3 O 7 ). In neither of these junction types did we observe any evidence for a proximity effect induced gap, and we place an upper limit of approximately 5 meV on its existence in the junctions that we have studied

An outdoor investigation of the absorption degradation of single ...

Indian Academy of Sciences (India)

Permanent link: https://www.ias.ac.in/article/fulltext/pram/086/04/0901-0909. Keywords. Thermography; hot spots; localized heating; single-junction amorphous silicon module; Fourier transform infrared spectroscopy. Abstract. This paper investigates the absorbance degradation of single-junction amorphous silicon (a-Si:H) ...

Effect of single Abrikosov vortices on the properties of Josephson tunnel junctions

International Nuclear Information System (INIS)

Golubov, A.A.; Kupriyanov, M.Yu.

1987-01-01

The effect of single Abrikosov vortices, trapped in the electrodes of a Josephson tunnel junction perpendicularly to the junction surface, on the tunnel current through the junction is studied within the framework of the microscopic theory. The current-voltage characteristic and the critical junction current I c are calculated for temperatures 0 c . It is shown that if the vortices at the junction are misaligned, singularities on the current-voltage characteristic appear at eV Δ (T), and in some cases the magnitude of suppression of I c may be of the order of magnitude of I c itself. The temperature dependence of the critical current is calculated for the case of one of the electrodes being a two-dimensional superconducting film in which the creation of opposite sign vortex pairs is significant

Elucidating PID Degradation Mechanisms and In Situ Dark I-V Monitoring for Modeling Degradation Rate in CdTe Thin-Film Modules

DEFF Research Database (Denmark)

Hacke, Peter; Spataru, Sergiu; Johnston, Steve

2016-01-01

A progression of potential-induced degradation (PID) mechanisms are observed in CdTe modules, including shunting/junction degradation and two different manifestations of series resistance depending on the stress level and water ingress. The dark I-V method for in-situ characterization of Pmax bas...

Temperature effects on quantum interference in molecular junctions

DEFF Research Database (Denmark)

Markussen, Troels; Thygesen, Kristian Sommer

2014-01-01

A number of experiments have demonstrated that destructive quantum interference (QI) effects in molecular junctions lead to very low conductances even at room temperature. On the other hand, another recent experiment showed increasing conductance with temperature which was attributed to decoheren...

Effective pressure and bubble generation in a microfluidic T-junction.

Science.gov (United States)

Wang, An-Bang; Lin, I-Chun; Hsieh, Yu-Wen; Shih, Wen-Pin; Wu, Guan-Wei

2011-10-21

To improve the existing trial-and-error process in designing a microfluidic T-junction, a systematic study of the geometrical (mainly the channel length) effects on the generated bubbly/slug flow was conducted to figure out basic design guidelines based on experimental and theoretical analyses. A driving system with dual constant pressure sources, instead of the commonly used dual constant volume-rate sources (such as two syringe pumps), was chosen in this study. The newly proposed effective pressure ratio (P(e)*) has revealed its advantages in excluding the surface tension effect of fluids. All the data of generated bubbly/slug flow for a given geometry collapse excellently into the same relationship of void fraction and effective pressure ratio. This relationship is insensitive to the liquid viscosity and the operation range is strongly affected by the geometrical effect, i.e., the channel length ratio of downstream to total equivalent length of the main channel in a T-junction chip. As to the theoretical design and analysis of gas-liquid-flow characteristics in a microfluidic T-junction, which is still sporadic in the literature, the proposed semi-empirical model has successfully predicted the operation boundaries and the output flow rate of bubbly/slug flow of different investigated cases and demonstrated its usability.

Electrical responses by effects of molecular adsorption on channel and junctions of carbon nanotube field effect transistors

International Nuclear Information System (INIS)

Kang, Donghun; Park, Wanjun

2008-01-01

We report the adsorption effect on the electrical transport of nanotube field effect transistors. The source-drain current is monitored separately for the nanotube channel and the metal-nanotube junction under different pressures of ambient air with a blocking passivation. The metal-nanotube junction shows a significant change from p-type to ambipolar upon vacuum pumping, while the nanotube channel changes modestly. The metal-nanotube junction is found to be far more sensitive to the environment than the nanotube channel. We suggest that the adsorption states underneath the blocking layer do not desorb, and thus the positive carriers would not be diluted upon the vacuum pumping. This result is interpreted as the formation of an i-p-i and p-i-p junction with charge transfer by oxygen molecules. (fast track communication)

Coherent charge fluctuations in Josephson junctions and the oscillations of the effective capacitance

International Nuclear Information System (INIS)

Krive, I.V.; Rozhavsky, A.S.

1990-07-01

We predict novel voltage oscillations of the effective capacitance of small Josephson junctions. This macroscopic effect involves coherent charge fluctuations with charge 2e, leading to a period of oscillations, V c = 2e/C, where C is the junction capacitance. The amplitude of the effect decreases with temperature as exp(-π 2 T/ε c ), where ε c = (2e) 2 /C. (author). 6 refs

Effect of colored noise on an overdamped Josephson junction

Science.gov (United States)

Genchev, Z. D.

2001-03-01

In this paper my attention is restricted to stochastic differential equation in phase function φ(t), describing an overdamped Josephson junction. I accept the RSJ (resistively shunted junction) modeling, when the contact characterized by resistance R and critical current I c is under the action of a given direct current I and stochastic current source Ĩ(t) (=0) : {ℏ}/{2 eR }{dφ }/{dt }+I csinφ=I+ Ĩ(t). In our case the thermal noise is a Gaussian process and obeys the Johnson-Nyquistr correlation law C(t)== {ℏ}/{2πR}∫ -∞∞dω ω coth{ℏω}/{2k BT }cosωt. The effective Fokker-Planck equation is derived and the current-voltage characteristics (CVCs) of the Josephson junction are calculated for weakly colored noise. In the limit limℏ→0C(t)= {2k BT }/{R}δ(t) the well-known results for white noise are recovered.

Floating-Gate Manipulated Graphene-Black Phosphorus Heterojunction for Nonvolatile Ambipolar Schottky Junction Memories, Memory Inverter Circuits, and Logic Rectifiers.

Science.gov (United States)

Li, Dong; Chen, Mingyuan; Zong, Qijun; Zhang, Zengxing

2017-10-11

The Schottky junction is an important unit in electronics and optoelectronics. However, its properties greatly degrade with device miniaturization. The fast development of circuits has fueled a rapid growth in the study of two-dimensional (2D) crystals, which may lead to breakthroughs in the semiconductor industry. Here we report a floating-gate manipulated nonvolatile ambipolar Schottky junction memory from stacked all-2D layers of graphene-BP/h-BN/graphene (BP, black phosphorus; h-BN, hexagonal boron nitride) in a designed floating-gate field-effect Schottky barrier transistor configuration. By manipulating the voltage pulse applied to the control gate, the device exhibits ambipolar characteristics and can be tuned to act as graphene-p-BP or graphene-n-BP junctions with reverse rectification behavior. Moreover, the junction exhibits good storability properties of more than 10 years and is also programmable. On the basis of these characteristics, we further demonstrate the application of the device to dual-mode nonvolatile Schottky junction memories, memory inverter circuits, and logic rectifiers.

A single-gradient junction technique to replace multiple-junction shifts for craniospinal irradiation treatment

International Nuclear Information System (INIS)

Hadley, Austin; Ding, George X.

2014-01-01

Craniospinal irradiation (CSI) requires abutting fields at the cervical spine. Junction shifts are conventionally used to prevent setup error–induced overdosage/underdosage from occurring at the same location. This study compared the dosimetric differences at the cranial-spinal junction between a single-gradient junction technique and conventional multiple-junction shifts and evaluated the effect of setup errors on the dose distributions between both techniques for a treatment course and single fraction. Conventionally, 2 lateral brain fields and a posterior spine field(s) are used for CSI with weekly 1-cm junction shifts. We retrospectively replanned 4 CSI patients using a single-gradient junction between the lateral brain fields and the posterior spine field. The fields were extended to allow a minimum 3-cm field overlap. The dose gradient at the junction was achieved using dose painting and intensity-modulated radiation therapy planning. The effect of positioning setup errors on the dose distributions for both techniques was simulated by applying shifts of ± 3 and 5 mm. The resulting cervical spine doses across the field junction for both techniques were calculated and compared. Dose profiles were obtained for both a single fraction and entire treatment course to include the effects of the conventional weekly junction shifts. Compared with the conventional technique, the gradient-dose technique resulted in higher dose uniformity and conformity to the target volumes, lower organ at risk (OAR) mean and maximum doses, and diminished hot spots from systematic positioning errors over the course of treatment. Single-fraction hot and cold spots were improved for the gradient-dose technique. The single-gradient junction technique provides improved conformity, dose uniformity, diminished hot spots, lower OAR mean and maximum dose, and one plan for the entire treatment course, which reduces the potential human error associated with conventional 4-shifted plans

Interaction of Ddc1 and RPA with single-stranded/double-stranded DNA junctions in yeast whole cell extracts: Proteolytic degradation of the large subunit of replication protein A in ddc1Δ strains.

Science.gov (United States)

Sukhanova, Maria V; D'Herin, Claudine; Boiteux, Serge; Lavrik, Olga I

2014-10-01

To characterize proteins that interact with single-stranded/double-stranded (ss/ds) DNA junctions in whole cell free extracts of Saccharomyces cerevisiae, we used [(32)P]-labeled photoreactive partial DNA duplexes containing a 3'-ss/ds-junction (3'-junction) or a 5'-ss/ds-junction (5'-junction). Identification of labeled proteins was achieved by MALDI-TOF mass spectrometry peptide mass fingerprinting and genetic analysis. In wild-type extract, one of the components of the Ddc1-Rad17-Mec3 complex, Ddc1, was found to be preferentially photocrosslinked at a 3'-junction. On the other hand, RPAp70, the large subunit of the replication protein A (RPA), was the predominant crosslinking product at a 5'-junction. Interestingly, ddc1Δ extracts did not display photocrosslinking of RPAp70 at a 5'-junction. The results show that RPAp70 crosslinked to DNA with a 5'-junction is subject to limited proteolysis in ddc1Δ extracts, whereas it is stable in WT, rad17Δ, mec3Δ and mec1Δ extracts. The degradation of the RPAp70-DNA adduct in ddc1Δ extract is strongly reduced in the presence of the proteasome inhibitor MG 132. We also addressed the question of the stability of free RPA, using anti-RPA antibodies. The results show that RPAp70 is also subject to proteolysis without photocrosslinking to DNA upon incubation in ddc1Δ extract. The data point to a novel property of Ddc1, modulating the turnover of DNA binding proteins such as RPAp70 by the proteasome. Copyright © 2014 Elsevier B.V. All rights reserved.

Performance comparison between p–i–n and p–n junction tunneling field-effect transistors

Science.gov (United States)

Yoon, Young Jun; Seo, Jae Hwa; Kang, In Man

2018-06-01

In this study, we investigated the direct-current (DC) and radio-frequency (RF) performances of p–i–n and p–n junction tunneling field-effect transistors (TFETs). Compared to the p–i–n junction TFET, the p–n junction TFET exhibited higher on-state current (I on) because the channel formation mechanism of the p–n junction TFET resulted in a narrower tunneling barrier and an expanded tunneling area. Further, the reduction of I on of the p–n junction TFET by the interface trap was smaller. Moreover, the p–n junction TFET exhibited lower gate-to-drain capacitance (C gd) because a depletion capacitance (C gd,dep) was formed by the depletion region under gate dielectric. Consequently, the p–n junction TFET achieved an improvement of cut-off frequency (f T) and intrinsic delay time (τ), which are related to the current performance and total gate capacitance (C gg). We confirmed the enhancement of device performances in terms of I on, f T, and τ by the conduction mechanism of the p–n junction TFET.

Effect of junction quality on the performance of a silicon solar cell ...

African Journals Online (AJOL)

In this work, a modeling study of the effect of the junction quality on the performance of a silicon solar cell is presented. Based on a one dimensional modeling of the solar cell, the continuity equation of excess minority carriers is solved with boundary conditions taking into account the intrinsic junction recombination velocity ...

Comparison of the magneto-Peltier and magneto-Seebeck effects in magnetic tunnel junctions

NARCIS (Netherlands)

Shan, J.; Dejene, F. K.; Leutenantsmeyer, J. C.; Flipse, J.; Munzenberg, M.; van Wees, B. J.

2015-01-01

Understanding heat generation and transport processes in a magnetic tunnel junction (MTJ) is a significant step towards improving its application in current memory devices. Recent work has experimentally demonstrated the magneto-Seebeck effect in MTJs, where the Seebeck coefficient of the junction

Spin-filtering effect and proximity effect in normal metal/ferromagnetic insulator/normal metal/superconductor junctions

International Nuclear Information System (INIS)

Li Hong; Yang Wei; Yang Xinjian; Qin Minghui; Xu Yihong

2007-01-01

Taking into account the thickness of the ferromagnetic insulator (FI), the spin-filtering effect and proximity effect in normal metal/ferromagnetic insulator/normal metal/superconductor (NM/FI/NM/SC) junctions are studied based on an extended Blonder-Tinkham-Klapwijk (BTK) theory. It is shown that a spin-dependent energy shift during the tunneling process induces splitting of the sub-energy gap conductance peaks and the spin polarization in the ferromagnetic insulator causes an imbalance of the peak heights. Different from the ferromagnet the spin-filtering effect of the FI cannot cause the reversion of the normalized conductance in NM/FI/NM/SC junctions

Entamoeba histolytica EhCP112 Dislocates and Degrades Claudin-1 and Claudin-2 at Tight Junctions of the Intestinal Epithelium

Directory of Open Access Journals (Sweden)

Patricia Cuellar

2017-08-01

Full Text Available During intestinal invasion, Entamoeba histolytica opens tight junctions (TJs reflected by transepithelial electrical resistance (TEER dropping. To explore the molecular mechanisms underlying this, we studied in vitro and in vivo the damage produced by the recombinant E. histolytica cysteine protease (rEhCP112 on TJ functions and proteins. rEhCP112 reduced TEER in Caco-2 cells in a dose- and time-dependent manner; and EhCP112-overexpressing trophozoites provoked major epithelial injury compared to control trophozoites. rEhCP112 penetrated through the intercellular space, and consequently the ion flux increased and the TJs fence function was disturbed. However, macromolecular flux was not altered. Functional in vitro assays revealed specific association of rEhCP112 with claudin-1 and claudin-2, that are both involved in regulating ion flux and fence function. Of note, rEhCP112 did not interact with occludin that is responsible for regulating macromolecular flux. Moreover, rEhCP112 degraded and delocalized claudin-1, thus affecting interepithelial adhesion. Concomitantly, expression of the leaky claudin-2 at TJ, first increased and then it was degraded. In vivo, rEhCP112 increased intestinal epithelial permeability in the mouse colon, likely due to apical erosion and claudin-1 and claudin-2 degradation. In conclusion, we provide evidence that EhCP112 causes epithelial dysfunction by specifically altering claudins at TJ. Thus, EhCP112 could be a potential target for therapeutic approaches against amoebiasis.

Effects of junctions on carbon nanotube network-based devices

Energy Technology Data Exchange (ETDEWEB)

Kang, Pil Soo; Kim, Gyu Tae [School of Electrical Engineering, Korea University, Seoul 136-713 (Korea, Republic of)

2011-11-15

Realistic random networks of carbon nanotubes (CNTs) were simulated by the noble hybrid method combining Monte Carlo and SPICE simulations. Near the percolation threshold, the electrical characteristics of networks are strongly affected by the contacts among nanotubes. The nonlinear electrical junctions in the CNT network were modeled by suitable SPICE models and simulated using our hybrid simulation method. We successfully described the morphological percolation threshold, and the critical density was determined as a function of normalized length. The effects of electrical junctions on the scaling of the sheet conductance were investigated. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Proximity effect and hot-electron diffusion in Ag/Al2O3/Al tunnel junctions

International Nuclear Information System (INIS)

Netel, H.; Jochum, J.; Labov, S.E.; Mears, C.A.; Frank, M.; Chow, D.; Lindeman, M.A.; Hiller, L.J.

1997-01-01

We have fabricated Ag/Al 2 O 3 /Al tunnel junctions on Si substrates using a new process. This process was developed to fabricate superconducting tunnel junctions (STJs) on the surface of a superconductor. These junctions allow us to study the proximity effect of a superconducting Al film on a normal metal trapping layer. In addition, these devices allow us to measure the hot-electron diffusion constant using a single junction. Lastly these devices will help us optimize the design and fabrication of tunnel junctions on the surface of high-Z, ultra-pure superconducting crystals. 5 refs., 8 figs

Investigation of the degradation of a thin-film hydrogenated amorphous silicon photovoltaic module

Energy Technology Data Exchange (ETDEWEB)

van Dyk, E.E.; Audouard, A.; Meyer, E.L. [Department of Physics, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth 6031 (South Africa); Woolard, C.D. [Department of Chemistry, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth 6031 (South Africa)

2007-01-23

The degradation of a thin-film hydrogenated single-junction amorphous silicon (a-Si:H) photovoltaic (PV) module has been studied. We investigated the different modes of electrical and physical degradation of a-Si:H PV modules by employing a degradation and failure assessment procedure used in conjunction with analytical techniques, including, scanning electron microscopy (SEM) and thermogravimetry. This paper reveals that due to their thickness, thin films are very sensitive to the type of degradation observed. Moreover, this paper deals with the problems associated with the module encapsulant, poly(ethylene-co-vinylacetate) (EVA). The main objective of this study was to establish the influence of outdoor environmental conditions on the performance of a thin-film PV module comprising a-Si:H single-junction cells. (author)

Giant electrode effect on tunnelling electroresistance in ferroelectric tunnel junctions.

Science.gov (United States)

Soni, Rohit; Petraru, Adrian; Meuffels, Paul; Vavra, Ondrej; Ziegler, Martin; Kim, Seong Keun; Jeong, Doo Seok; Pertsev, Nikolay A; Kohlstedt, Hermann

2014-11-17

Among recently discovered ferroelectricity-related phenomena, the tunnelling electroresistance (TER) effect in ferroelectric tunnel junctions (FTJs) has been attracting rapidly increasing attention owing to the emerging possibilities of non-volatile memory, logic and neuromorphic computing applications of these quantum nanostructures. Despite recent advances in experimental and theoretical studies of FTJs, many questions concerning their electrical behaviour still remain open. In particular, the role of ferroelectric/electrode interfaces and the separation of the ferroelectric-driven TER effect from electrochemical ('redox'-based) resistance-switching effects have to be clarified. Here we report the results of a comprehensive study of epitaxial junctions comprising BaTiO(3) barrier, La(0.7)Sr(0.3)MnO(3) bottom electrode and Au or Cu top electrodes. Our results demonstrate a giant electrode effect on the TER of these asymmetric FTJs. The revealed phenomena are attributed to the microscopic interfacial effect of ferroelectric origin, which is supported by the observation of redox-based resistance switching at much higher voltages.

Spin nutation effects in molecular nanomagnet–superconductor tunnel junctions

International Nuclear Information System (INIS)

Abouie, J; Abdollahipour, B; Rostami, A A

2013-01-01

We study the spin nutation effects of a molecular nanomagnet on the Josephson current through a superconductor|molecular nanomagnet|superconductor tunnel junction. We explicitly demonstrate that, due to the spin nutation of the molecular nanomagnet, two oscillatory terms emerge in the ac Josephson current in addition to the conventional ac Josephson current. Some resonances occur in the junction due to the interactions of the transported quasiparticles with the bias voltage and molecular nanomagnet spin dynamics. Their appearance indicates that the energy exchanged during these interactions is in the range of the superconducting energy gap. We also show that the spin nutation is able to convert the ac Josephson current to a dc current, which is interesting for applications. (paper)

Meissner effect in diffusive normal metal/d-wave superconductor junctions

NARCIS (Netherlands)

Yokoyama, Takehito; Tanaka, Yukio; Golubov, Alexandre Avraamovitch; Inoue, Jun-ichiro; Asano, Yasuhiro

2005-01-01

The Meissner effect in diffusive normal metal/insulator/d-wave superconductor junctions is studied theoretically in the framework of the Usadel equation under the generalized boundary condition. The effect of midgap Andreev resonant states (MARS) formed at the interface of d-wave superconductor is

Field emission current from a junction field-effect transistor

International Nuclear Information System (INIS)

Monshipouri, Mahta; Abdi, Yaser

2015-01-01

Fabrication of a titanium dioxide/carbon nanotube (TiO 2 /CNT)-based transistor is reported. The transistor can be considered as a combination of a field emission transistor and a junction field-effect transistor. Using direct current plasma-enhanced chemical vapor deposition (DC-PECVD) technique, CNTs were grown on a p-typed (100)-oriented silicon substrate. The CNTs were then covered by TiO 2 nanoparticles 2–5 nm in size, using an atmospheric pressure CVD technique. In this device, TiO 2 /CNT junction is responsible for controlling the emission current. High on/off-current ratio and proper gate control are the most important advantages of device. A model based on Fowler–Nordheim equation is utilized for calculation of the emission current and the results are compared with experimental data. The effect of TiO 2 /CNT hetero-structure is also investigated, and well modeled

The role of magnetic fields for curvature effects in Josephson junction

Energy Technology Data Exchange (ETDEWEB)

Jarmoliński, A.; Dobrowolski, T., E-mail: dobrow@up.krakow.pl

2017-06-01

The large area Josephson junction is considered. On the basis of Maxwell equations the influence of the magnetic field on fluxion dynamics is considered. The presented studies show that assumptions presumed in the literature do not restrict experimental settings adopted in the considerations of the fluxion movement in the Josephson junction. It is shown that the particular orientation of the magnetic fields is not needed in order to study physical effects of curvature and therefore they do not restrict the experimental arrangements.

Atomic-scaled characterization of graphene PN junctions

Science.gov (United States)

Zhou, Xiaodong; Wang, Dennis; Dadgar, Ali; Agnihotri, Pratik; Lee, Ji Ung; Reuter, Mark C.; Ross, Frances M.; Pasupathy, Abhay N.

Graphene p-n junctions are essential devices for studying relativistic Klein tunneling and the Veselago lensing effect in graphene. We have successfully fabricated graphene p-n junctions using both lithographically pre-patterned substrates and the stacking of vertical heterostructures. We then use our 4-probe STM system to characterize the junctions. The ability to carry out scanning electron microscopy (SEM) in our STM instrument is essential for us to locate and measure the junction interface. We obtain both the topography and dI/dV spectra at the junction area, from which we track the shift of the graphene chemical potential with position across the junction interface. This allows us to directly measure the spatial width and roughness of the junction and its potential barrier height. We will compare the junction properties of devices fabricated by the aforementioned two methods and discuss their effects on the performance as a Veselago lens.

Effect of nitrogen plasma treatment at the Al2O3/Fe interface in magnetic tunnel junction

International Nuclear Information System (INIS)

Shim, Heejae; Cho, B. K.; Kim, Jin-Tae; Kim, T. W.; Park, W. J.

2003-01-01

We investigated the effects of nitrogen plasma treatment on top surface of Fe pinned layer for short times (t ex =0, 10, 30, and 60 s) in magnetic tunnel junctions and annealing of the junctions. The nitrogen-treated junctions show much reduced magnetoresistance (MR) ratio and significantly lower resistance-area (RA) products compared with the untreated junction, i.e., MR≅3%, RA≅30 kΩ μm 2 for t ex =10 s and MR≅10%, RA≅60 kΩ μm 2 for t ex =0 s. The untreated junction showed enhanced MR ratio up to about 17% and higher RA (≅70 kΩ μm2) upon thermal annealing at T a =230 deg. C, as expected. For the nitrogen-treated junctions, while the MR ratio also increases up to about 16% upon annealing at T a =230 deg. C, which is almost the same value as the one of the optimal reference junction, the RA values of the annealed junctions still keep as low as their initial values. We believe that the redistribution of nitrogen during the annealing process is responsible for the change of properties of nitrogen-treated junction. The bias dependence of MR and the estimation of effective barrier height and thickness are studied and found to be consistent with the observed changes in nitrogen-treated junctions

Effect of Abrikosov vortices on Josephson junction currents in high temperature superconductors

International Nuclear Information System (INIS)

Mitchell, E.; Mueller, K.-H.

2000-01-01

Full text: The current-carrying capacity of high temperature superconductors (HTS) is limited by the weak links which form between individual grains. We investigate the role of Abrikosov vortices (AV) and inhomogeneities at the intergrain boundary by examining the high magnetic field characteristics of HTS thin film grain boundary junctions. We model the effects of junction inhomogeneity, AV's and vortex pinning by solving the inhomogeneous London equation. The calculations show that both inhomogeneities and the presence of AV's improve the current-carrying capacity across grain boundaries at high magnetic fields. Our experimental measurements of the irreversibility of the junction critical current density J c (H a ) find good agreement with the model

Josephson effect in SIFS junctions at arbitrary scattering

International Nuclear Information System (INIS)

Pugach, N. G.; Kupriyanov, M. Yu.; Goldobin, E.; Koelle, D.; Kleiner, R.

2011-01-01

Full text: The interplay between dirty and clean limits in Superconductor-Ferromagnet-Superconductor (SFS) Josephson junctions is a subject of intensive theoretical studies. SIFS junctions, containing an additional insulator (I) barrier are interesting as potential logic elements in superconducting circuits, since their critical current I c can be tuned over a wide range, still keeping a high I c R N product, where R N is the normal resistance of the junction. They are also a convenient model system for a comparative study of the 0-π transitions for arbitrary relations between characteristic lengths of the F-layer: the layer thickness d, the mean free path l, the magnetic length ξ H =v F /2H, and the nonmagnetic coherence length ξ 0 =v F /2πT, where v F is the Fermi velocity, H is the exchange magnetic energy, and T is the temperature. The spatial variations of the order parameter are described by the complex coherent length in the ferromagnet ξ F -1 = ξ 1 -1 + iξ 2 -1 . It is well known, that in the dirty limit (l 1,2 ) described by the Usadel equations both ξ 1 2 = ξ 2 2 = v F l/3H. In this work the spatial distribution of the anomalous Green's functions and the Josephson current in the SIFS junction are calculated. The linearized Eilenberger equations are solved together with the Zaitsev boundary conditions. This allows comparing the dirty and the clean limits, investigating a moderate disorder, and establishing the applicability limits of the Usadel equations for such structures. We demonstrate that for an arbitrary relation between l, ξ H , and d the spatial distribution of the anomalous Green's function can be approximated by a single exponent with reasonable accuracy, and we find its effective decay length and oscillation period for several values of ξ H , l and d. The role of different types of the FS interface is analyzed. The applicability range of the Usadel equation is established. The results of calculations have been applied to the

Field-effect P-N junction

Science.gov (United States)

Regan, William; Zettl, Alexander

2015-05-05

This disclosure provides systems, methods, and apparatus related to field-effect p-n junctions. In one aspect, a device includes an ohmic contact, a semiconductor layer disposed on the ohmic contact, at least one rectifying contact disposed on the semiconductor layer, a gate including a layer disposed on the at least one rectifying contact and the semiconductor layer and a gate contact disposed on the layer. A lateral width of the rectifying contact is less than a semiconductor depletion width of the semiconductor layer. The gate contact is electrically connected to the ohmic contact to create a self-gating feedback loop that is configured to maintain a gate electric field of the gate.

Electron transport properties in InAs four-terminal ballistic junctions under weak magnetic fields

International Nuclear Information System (INIS)

Koyama, M.; Fujiwara, K.; Amano, N.; Maemoto, T.; Sasa, S.; Inoue, M.

2009-01-01

We report on the electron transport properties based on ballistic electrons under magnetic fields in four-terminal ballistic junctions fabricated on an InAs/AlGaSb heterostructure. The four-terminal junction structure is composed of two longitudinal stems with two narrow wires slanted with 30 degree from the perpendicular axis. The electron focusing peak was obtained with the bend resistance measurement. Then it was investigated the nonlinear electron transport property of potential difference between longitudinal stems due to ballistic electrons with applying direct current from narrow wires. Observed nonlinearity showed clear rectification effects which have negative polarity regardless of input voltage polarity. Although this nonlinearity was qualitatively changed due to the Lorentz force under magnetic fields, the degradation of ballistic effects on nonlinear properties were observed when the current increased to higher strength. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Performance enhancement of Ge-on-Insulator tunneling FETs with source junctions formed by low-energy BF2 ion implantation

Science.gov (United States)

Katoh, Takumi; Matsumura, Ryo; Takaguchi, Ryotaro; Takenaka, Mitsuru; Takagi, Shinichi

2018-04-01

To clarify the process of formation of source regions of high-performance Ge n-channel tunneling field-effect transistors (TFETs), p+-n junctions formed by low-energy ion implantation (I/I) of BF2 atoms are characterized. Here, the formation of p+-n junctions with steep B profiles and low junction leakage is a key issue. The steepness of 5.7 nm/dec in profiles of B implanted into Ge is obtained for BF2 I/I at 3 keV with a dose of 4 × 1014 cm-2. Ge-on-insulator (GOI) n-TFETs with the source tunnel junctions formed by low-energy B and BF2 I/I are fabricated on GOI substrates and the device operation is confirmed. Although the performance at room temperature is significantly degraded by the source junction leakage current, an I on/I off ratio of 105 and the minimum sub-threshold swing (S.S.) of 130 mV/dec are obtained at 10 K. It is found that GOI n-TFETs with steeper B profiles formed by BF2 I/I have led to higher on current and a lower sub-threshold slope, demonstrating the effectiveness of steep B profiles in enhancing the GOI TFET performance.

Effect of cross-type bias in a two-dimensional array of short Josephson junctions

DEFF Research Database (Denmark)

Filatrella, G.; Pedersen, Niels Falsig; Wiesenfeld, K.

1998-01-01

We investigate numerically the effect of cross-type bias on two-dimensional arrays of short Josephson junctions. We have demonstrated that, for the simplest circuit, this type of bias is able to phase lock the junctions yielding a substantial improvement over ordinary biasing schemes. (C) 1998...

Field emission current from a junction field-effect transistor

Energy Technology Data Exchange (ETDEWEB)

Monshipouri, Mahta; Abdi, Yaser, E-mail: y.abdi@ut.ac.ir [University of Tehran, Nano-Physics Research Laboratory, Department of Physics (Iran, Islamic Republic of)

2015-04-15

Fabrication of a titanium dioxide/carbon nanotube (TiO{sub 2}/CNT)-based transistor is reported. The transistor can be considered as a combination of a field emission transistor and a junction field-effect transistor. Using direct current plasma-enhanced chemical vapor deposition (DC-PECVD) technique, CNTs were grown on a p-typed (100)-oriented silicon substrate. The CNTs were then covered by TiO{sub 2} nanoparticles 2–5 nm in size, using an atmospheric pressure CVD technique. In this device, TiO{sub 2}/CNT junction is responsible for controlling the emission current. High on/off-current ratio and proper gate control are the most important advantages of device. A model based on Fowler–Nordheim equation is utilized for calculation of the emission current and the results are compared with experimental data. The effect of TiO{sub 2}/CNT hetero-structure is also investigated, and well modeled.

Fluctuations of the baryonic flux-tube junction from effective string theory

International Nuclear Information System (INIS)

Pfeuffer, Melanie; Bali, Gunnar S.; Panero, Marco

2009-01-01

In quenched QCD, where the dynamic creation of quark-antiquark pairs out of the vacuum is neglected, a confined baryonic system composed of three static quarks exhibits stringlike behavior at large interquark separation, with the formation of flux tubes characterized by the geometry of the so-called Y ansatz. We study the fluctuations of the junction of the three flux tubes, assuming the dynamics to be governed by an effective bosonic string model. We show that the asymptotic behavior of the effective width of the junction grows logarithmically with the distance between the sources, with the coefficient depending on the number of joining strings, on the dimension of spacetime and on the string tension.

Quantum interference effects at room temperature in OPV-based single-molecule junctions

DEFF Research Database (Denmark)

Arroyo, Carlos R.; Frisenda, Riccardo; Moth-Poulsen, Kasper

2013-01-01

Interference effects on charge transport through an individual molecule can lead to a notable modulation and suppression on its conductance. In this letter, we report the observation of quantum interference effects occurring at room temperature in single-molecule junctions based on oligo(3......)-phenylenevinylene (OPV3) derivatives, in which the central benzene ring is coupled to either para- or meta-positions. Using the break-junction technique, we find that the conductance for a single meta-OPV3 molecule wired between gold electrodes is one order of magnitude smaller than that of a para-OPV3 molecule...

Method of manufacturing Josephson junction integrated circuits

International Nuclear Information System (INIS)

Jillie, D.W. Jr.; Smith, L.N.

1985-01-01

Josephson junction integrated circuits of the current injection type and magnetically controlled type utilize a superconductive layer that forms both Josephson junction electrode for the Josephson junction devices on the integrated circuit as well as a ground plane for the integrated circuit. Large area Josephson junctions are utilized for effecting contact to lower superconductive layers and islands are formed in superconductive layers to provide isolation between the groudplane function and the Josephson junction electrode function as well as to effect crossovers. A superconductor-barrier-superconductor trilayer patterned by local anodization is also utilized with additional layers formed thereover. Methods of manufacturing the embodiments of the invention are disclosed

Effect of temperature on spontaneous release of transmitter at the mammalian neuromuscular junction

Energy Technology Data Exchange (ETDEWEB)

Duncan, C J; Statham, H E

1977-01-01

Temperature has a multifactorial effect on miniature endplate potential (MEPP) frequency at the mammalian neuromuscular junction, with a negative Q/sub 10/ at 14--28/sup 0/C. The results are explained in terms of the effect of temperature on the various factors that control (Ca/sup 2/+sub i/ at the presynaptic terminals. The temperature-sensitivity of the Ca/sup 2 +/-transport enzyme is believed to be of particular significance and accounts for the observed differences between the amphibian and mammalian neuromuscular junctions.

Calculations of the displacement damage and short-circuit current degradation in proton irradiated (AlGa)As-GaAs solar cells

Science.gov (United States)

Yeh, C. S.; Li, S. S.; Loo, R. Y.

1987-01-01

A theoretical model for computing the displacement damage defect density and the short-circuit current (I sub sc) degradation in proton-irradiated (AlGa)As-GaAs p-n junction solar cells is presented. Assumptions were made with justification that the radiation induced displacement defects form an effective recombination center which controls the electron and hole lifetimes in the junction space charge region and in the n-GaAs active layer of the irradiated GaAs p-n junction cells. The degradation of I sub sc in the (AlGa)As layer was found to be negligible compared to the total degradation. In order to determine the I sub sc degradation, the displacement defect density, path length, range, reduced energy after penetrating a distance x, and the average number of displacements formed by one proton scattering event were first calculated. The I sub sc degradation was calculated by using the electron capture cross section in the p-diffused layer and the hole capture cross section in the n-base layer as well as the wavelength dependent absorption coefficients. Excellent agreement was found between the researchers calculated values and the measured I sub sc in the proton irradiated GaAs solar cells for proton energies of 100 KeV to 10 MeV and fluences from 10 to the 10th power p/square cm to 10 to the 12th power p/square cm.

Electron optics with ballistic graphene junctions

Science.gov (United States)

Chen, Shaowen

Electrons transmitted across a ballistic semiconductor junction undergo refraction, analogous to light rays across an optical boundary. A pn junction theoretically provides the equivalent of a negative index medium, enabling novel electron optics such as negative refraction and perfect (Veselago) lensing. In graphene, the linear dispersion and zero-gap bandstructure admit highly transparent pn junctions by simple electrostatic gating, which cannot be achieved in conventional semiconductors. Robust demonstration of these effects, however, has not been forthcoming. Here we employ transverse magnetic focusing to probe propagation across an electrostatically defined graphene junction. We find perfect agreement with the predicted Snell's law for electrons, including observation of both positive and negative refraction. Resonant transmission across the pn junction provides a direct measurement of the angle dependent transmission coefficient, and we demonstrate good agreement with theory. Comparing experimental data with simulation reveals the crucial role played by the effective junction width, providing guidance for future device design. Efforts toward sharper pn junction and possibility of zero field Veselago lensing will also be discussed. This work is supported by the Semiconductor Research Corporations NRI Center for Institute for Nanoelectronics Discovery and Exploration (INDEX).

Cdc42 is crucial for the maturation of primordial cell junctions in keratinocytes independent of Rac1

DEFF Research Database (Denmark)

Du, Dan; Pedersen, Esben; Wang, Zhipeng

2008-01-01

Cell-cell contacts are crucial for the integrity of all tissues. Contrasting reports have been published about the role of Cdc42 in epithelial cell-cell contacts in vitro. In keratinocytes, it was suggested that Rac1 and not Cdc42 is crucial for the formation of mature epithelial junctions, based...... on dominant negative inhibition experiments. Deletion of the Cdc42 gene in keratinocytes in vivo slowly impaired the maintenance of cell-cell contacts by an increased degradation of beta-catenin. Whether Cdc42 is required for the formation of mature junctions was not tested. We show now that Cdc42-deficient...... immortalized and primary keratinocytes form only punctate primordial cell contacts in vitro, which cannot mature into belt-like junctions. This defect was independent of enhanced degradation of beta-catenin, but correlated to an impaired activation and localization of aPKCzeta in the Cdc42-null keratinocytes...

Practical approach to determining charge collected in multi-junction structures due to the ion shunt effect

International Nuclear Information System (INIS)

Brown, A.O.; Bhuva, B.; Kerns, S.E.

1993-01-01

In order to design semiconductor devices so that they are resistant to single event upsets, a designer needs to know how much charge would be collected at various junctions in the semiconductor structure. For over a decade researchers have studied the physics of charge collection in semiconductor structures, focusing primarily on the charge collected between the p and n regions of a pn junction by drift and diffusion effects -- a process called funneling. However, when an energetic ion penetrates more than one pn junction, funneling is not the only charge collection mechanism. Simulations and experiments on multi-junction structures have shown dramatic change in the charge collected when an ion penetrates two pn junctions. This charge transport between two regions of like conductivity that are ''bridged'' together by the ion track is called the ion shunt effect -- an effect investigated and experimentally proven by Hauser, et al. and Knudson, et al. This paper will present the algorithms and results of a computer program used to determine the charge collected on silicon semiconductor transistors due to the ion shunt effect. The program is unique because it is quick and simple to use and because it uses a general algorithm to determine an accurate initial electron-hole pair distribution in the ion track

Degradation of light emitting diodes: a proposed methodology

International Nuclear Information System (INIS)

Koh, Sau; Vam Driel, Willem; Zhang, G.Q.

2011-01-01

Due to their long lifetime and high efficacy, light emitting diodes have the potential to revolutionize the illumination industry. However, self heat and high environmental temperature which will lead to increased junction temperature and degradation due to electrical overstress can shorten the life of the light emitting diode. In this research, a methodology to investigate the degradation of the LED emitter has been proposed. The epoxy lens of the emitter can be modelled using simplified Eyring methods whereas an equation has been proposed for describing the degradation of the LED emitters. (semiconductor devices)

Laser induced non-monotonic degradation in short-circuit current of triple-junction solar cells

Science.gov (United States)

Dou, Peng-Cheng; Feng, Guo-Bin; Zhang, Jian-Min; Song, Ming-Ying; Zhang, Zhen; Li, Yun-Peng; Shi, Yu-Bin

2018-06-01

In order to study the continuous wave (CW) laser radiation effects and mechanism of GaInP/GaAs/Ge triple-junction solar cells (TJSCs), 1-on-1 mode irradiation experiments were carried out. It was found that the post-irradiation short circuit current (ISC) of the TJSCs initially decreased and then increased with increasing of irradiation laser power intensity. To explain this phenomenon, a theoretical model had been established and then verified by post-damage tests and equivalent circuit simulations. Conclusion was drawn that laser induced alterations in the surface reflection and shunt resistance were the main causes for the observed non-monotonic decrease in the ISC of the TJSCs.

Modeling Radiation Effects on a Triple Junction Solar Cell using Silvaco ATLAS

OpenAIRE

Schiavo, Daniel

2012-01-01

In this research, Silvaco ATLAS, an advanced virtual wafer fabrication tool, was used to model the effects of radiation on a triple junction InGaP/GaAs/Ge solar cell. A Silvaco ATLAS model of a triple junction InGaP/GaAs/Ge cell was created by first creating individual models for solar cells composed of each material. Realistic doping levels were used and thicknesses were varied to produce the design parameters and create reasonably efficient solar cell models for testing. After the individua...

Radiation effects on junction field-effect transistors (JFETS), MOSFETs, and bipolar transistors, as related to SSC circuit design

International Nuclear Information System (INIS)

Kennedy, E.J.; Alley, G.T.; Britton, C.L. Jr.; Skubic, P.L.; Gray, B.; Wu, A.

1990-01-01

Some results of radiation effects on selected junction field-effect transistors, MOS field-effect transistors, and bipolar junction transistors are presented. The evaluations include dc parameters, as well as capacitive variations and noise evaluations. The tests are made at the low current and voltage levels (in particular, at currents ≤1 mA) that are essential for the low-power regimes required by SSC circuitry. Detailed noise data are presented both before and after 5-Mrad (gamma) total-dose exposure. SPICE radiation models for three high-frequency bipolar processes are compared for a typical charge-sensitive preamplifier

AC Josephson effect in YBa2Cu3O7-δ bicrystal grain boundary junctions

International Nuclear Information System (INIS)

Fischer, G.M.; Andreev, A.V.; Divin, Y.Ya.; Freltoft, T.; Mygind, J.; Pedersen, N.F.; Shen Yueqiang; Vase, P.

1994-01-01

The ac Josephson effect in YBa 2 Cu 3 O 7-δ bicrystal grain boundary junctions was studied in the temperature range from 4K to 90K. Junctions with widths from 0.2 to 50 μm were made on SrTiO 3 bicrystal substrates by laser ablation and e-beam lithography. The linewidth of the Josephson oscillations is derived from the shape of the dc voltage response to low-intensity, f = 70 GHz radiation at voltages V ≅ (h/2e) f, assuming the RSJ model. The effect of the size on the Josephson behavior of this type of high-T c junctions was studied. Close to T c the linewidth of the Josephson oscillations was shown to be determined by thermal fluctuations. (orig.)

Linker-dependent Junction Formation Probability in Single-Molecule Junctions

Energy Technology Data Exchange (ETDEWEB)

Yoo, Pil Sun; Kim, Taekyeong [HankukUniversity of Foreign Studies, Yongin (Korea, Republic of)

2015-01-15

We compare the junction formation probabilities of single-molecule junctions with different linker molecules by using a scanning tunneling microscope-based break-junction technique. We found that the junction formation probability varies as SH > SMe > NH2 for the benzene backbone molecule with different types of anchoring groups, through quantitative statistical analysis. These results are attributed to different bonding forces according to the linker groups formed with Au atoms in the electrodes, which is consistent with previous works. Our work allows a better understanding of the contact chemistry in the metal.molecule junction for future molecular electronic devices.

Planar Josephson tunnel junctions in a transverse magnetic field

DEFF Research Database (Denmark)

Monacoa, R.; Aarøe, Morten; Mygind, Jesper

2007-01-01

demagnetization effects imposed by the tunnel barrier and electrodes geometry are important. Measurements of the junction critical current versus magnetic field in planar Nb-based high-quality junctions with different geometry, size, and critical current density show that it is advantageous to use a transverse......Traditionally, since the discovery of the Josephson effect in 1962, the magnetic diffraction pattern of planar Josephson tunnel junctions has been recorded with the field applied in the plane of the junction. Here we discuss the static junction properties in a transverse magnetic field where...

Study of the degradation of the breakdown voltage of a super-junction power MOSFET due to charge imbalance

International Nuclear Information System (INIS)

Kondekar, Pravin N.; Oh, Hwan-Sool; Kim, Young-Beom

2006-01-01

In this research, we analytically designed a super-junction (SJ) structure and used a simulation tool to study its off-state charge imbalance behavior. In the case of a SJ MOSFET (CoolMOS TM ), designed for the lowest specific on- resistance R on , the MOS part of the transistor (channel region) affected the symmetry, creating a charge imbalance; in addition to this, the imbalance in the SJ drift layer, which was inherently due to limitations in the fabrication process was simulated by varying the doping density of the pillars up to 10 %. The underlying physical mechanisms responsible for the reduction of the breakdown voltage (BV) were investigated in detail by using the electric field profiles and potential contours. The effect of varying the junction depth of a p-body/well and the cell pitch on the breakdown voltage was also analyzed. The trade off between BV sensitivity and specific R on was also investigated.

The effect and mechanism of the bipolar junction transistor in different temperature

International Nuclear Information System (INIS)

Wang Dong; Lu Wu; Ren Diyuan; Li Aiwu; Kuang Zhibing

2007-01-01

The annealing-effect of bipolar junction transistor in different temperature is investigated. It is found that the anneal of the bipolar transistor is related to the annealing-temperature, and the annealing-effect of the different type transistor is dissimilar. The possible mechanism is discussed. (authors)

Quantum Junction Solar Cells

KAUST Repository

Tang, Jiang

2012-09-12

Colloidal quantum dot solids combine convenient solution-processing with quantum size effect tuning, offering avenues to high-efficiency multijunction cells based on a single materials synthesis and processing platform. The highest-performing colloidal quantum dot rectifying devices reported to date have relied on a junction between a quantum-tuned absorber and a bulk material (e.g., TiO 2); however, quantum tuning of the absorber then requires complete redesign of the bulk acceptor, compromising the benefits of facile quantum tuning. Here we report rectifying junctions constructed entirely using inherently band-aligned quantum-tuned materials. Realizing these quantum junction diodes relied upon the creation of an n-type quantum dot solid having a clean bandgap. We combine stable, chemically compatible, high-performance n-type and p-type materials to create the first quantum junction solar cells. We present a family of photovoltaic devices having widely tuned bandgaps of 0.6-1.6 eV that excel where conventional quantum-to-bulk devices fail to perform. Devices having optimal single-junction bandgaps exhibit certified AM1.5 solar power conversion efficiencies of 5.4%. Control over doping in quantum solids, and the successful integration of these materials to form stable quantum junctions, offers a powerful new degree of freedom to colloidal quantum dot optoelectronics. © 2012 American Chemical Society.

Analyses of component degradation to evaluate maintenance effectiveness and aging effects

International Nuclear Information System (INIS)

Samanta, P.K.; Hsu, F.; Subudhi, M.; Vesely, W.E.

1991-01-01

This paper describes degradation modeling, an approach for analyzing degradation and failure of components to understand the aging process of components. As used in our study, degradation modeling is the analysis of information on degradation of components for developing models of the degradation process and its implications. This modeling focuses on the analysis of the times of degradations of components, to model how the rate of degradation changes with the age of the component. With this methodology we also determine the effectiveness of maintenance as applicable to aging evaluations. The specific applications which are performed show quantitative models of degradation rates of components and failure rates of components from plant-specific data. The statistical techniques allow aging trends to be identified in the degradation data and in the failure data. Initial estimates of the effectiveness of maintenance in limiting degradations from becoming failures are developed. These results are important first steps in degradation modeling, and show that degradation can be modeled to identify aging trends. 2 refs., 8 figs., 1 tab

Coherent Cooper pair tunneling in systems of Josephson junctions: effects of quasiparticle tunneling and of the electromagnetic environment

NARCIS (Netherlands)

Maassen van den Brink, A.; Odintsov, A.A.; Bobbert, P.A.; Schön, G.

1991-01-01

Small capacitance tunnel junctions show single electron effects and, in the superconducting state, the coherent tunneling of Cooper pairs. We study these effects in a system of two Josephson junctions, driven by a voltage source with a finite impedance. Novel features show up in theI–V

Effect of ionising radiation exposure on structure and permeability of epithelial junctions in rat ileum

International Nuclear Information System (INIS)

Lebrum, F.; Dublineau, I.; Grison, S.; Strup, C.; Griffiths, N.M.

2002-01-01

Exposure of the digestive tract to ionising radiation results in both morphological and functional alterations of the small intestine. However little is known about the effect of irradiation on the junctions playing a major role in the maintenance of epithelial barrier integrity. Thus the aim of this study was to investigate, in rat ileum, the effect of radiation exposure on the permeability of the epithelial barrier in parallel with the localization of certain inter- and intra-cellular proteins of tight and adherent junctions

Effect of reinforcement on plastic limit loads of branch junctions

International Nuclear Information System (INIS)

Kim, Yun-Jae; Myeong, Man-Sik; Yoon, Kee-Bong

2009-01-01

This paper provides effects of reinforcement shape and area on plastic limit loads of branch junctions under internal pressure and in-plane/out-of-plane bending, via detailed three-dimensional finite element limit analysis assuming elastic-perfectly plastic material behaviour. It is found that reinforcement is most effective when (in-plane/out-of-plane) bending is applied to the branch pipe. When bending is applied to the run pipe, reinforcement is less effective when bending is applied to the branch pipe. The reinforcement effect is the least effective for internal pressure.

Electromagnetic waves in single- and multi-Josephson junctions

International Nuclear Information System (INIS)

Matsumoto, Hideki; Koyama, Tomio; Machida, Masahiko

2008-01-01

The terahertz wave emission from the intrinsic Josephson junctions is one of recent topics in high T c superconductors. We investigate, by numerical simulation, properties of the electromagnetic waves excited by a constant bias current in the single- and multi-Josephson junctions. Nonlinear equations of phase-differences are solved numerically by treating the effects of the outside electromagnetic fields as dynamical boundary conditions. It is shown that the emitted power of the electromagnetic wave can become large near certain retrapping points of the I-V characteristics. An instability of the inside phase oscillation is related to large amplitude of the oscillatory waves. In the single- (or homogeneous mutli-) Josephson junctions, electromagnetic oscillations can occur either in a form of standing waves (shorter junctions) or by formation of vortex-antivortex pairs (longer junctions). How these two effects affects the behavior of electromagnetic waves in the intrinsic Josephson junctions is discussed

Effect of transparency on the Josephson junction between D-wave superconductors

International Nuclear Information System (INIS)

Rashedi, G

2008-01-01

In this paper, a dc Josephson junction between two singlet superconductors (d-wave and s-wave) with arbitrary reflection coefficient has been investigated theoretically following the famous paper [Y. Tanaka and S. Kashiwaya 1996 Phys. Rev. B 53, R11957]. For the case of High T c superconductors, the c-axes are parallel to an interface with finite transparency and their ab-planes have a mis-orientation. The effect of transparency and mis-orientation on the currents is studied both analytically and numerically. It is observed that, the current phase relations are totally different from the case of ideal transparent Josephson junctions between d-wave superconductors and two s-wave superconductors. This apparatus can be used to demonstrate d-wave order parameter in High T c superconductors

Observation of supercurrent in graphene-based Josephson junction

Energy Technology Data Exchange (ETDEWEB)

Wang, Libin; Li, Sen; Kang, Ning [Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871 (China); Xu, Chuan; Ren, Wencai [Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016 (China)

2015-07-01

Josephson junctions with a normal metal region sandwiched between two superconductors (S) are known as superconductor- normal-superconductor (SNS) structures. It has attracted significant attention especially when changing the normal metal with graphene, which allow for high tunability with the gate voltage and to study the proximity effect of the massless Dirac fermions. Here we report our work on graphene-based Josephson junction with a new two dimensional superconductor crystal, which grown directly on graphene, as superconducting electrodes. At low temperature, we observer proximity effect induced supercurrent flowing through the junction. The temperature and the magnetic field dependences of the critical current characteristics of the junction are also studied. The critical current exhibits a Fraunhofer-type diffraction pattern against magnetic field. Our experiments provided a new route of fabrication of graphene-based Josephson junction.

Josephson junctions array resonators

Energy Technology Data Exchange (ETDEWEB)

Gargiulo, Oscar; Muppalla, Phani; Mirzaei, Iman; Kirchmair, Gerhard [Institute for Quantum Optics and Quantum Information, Innsbruck (Austria)

2016-07-01

We present an experimental analysis of the self- and cross-Kerr effect of extended plasma resonances in Josephson junction chains. The chain consists of 1600 individual junctions and we can measure quality factors in excess of 10000. The Kerr effect manifests itself as a frequency shift that depends linearly on the number of photons in a resonant mode. By changing the input power we are able to measure this frequency shift on a single mode (self-kerr). By changing the input power on another mode while measuring the same one, we are able to evaluate the cross-kerr effect. We can measure the cross-Kerr effect by probing the resonance frequency of one mode while exciting another mode of the array with a microwave drive.

The interface modification for GNWs/Si Schottky junction with PEI/PEIE interlayers

Science.gov (United States)

Zhou, Quan; Liu, Xiangzhi; Luo, Wei; Shen, Jun; Wang, Yuefeng; Wei, Dapeng

2018-03-01

Polyethylenimine ethoxylated (PEIE) and polyethyl-enimine (PEI), the two kinds of interface buffer layer, are widely used in the organic light-emitting diodes and solar cells for band alignment adjustment. In this report, we carefully studied the influence of the inserting organic layer on the graphene nanowalls(GNWS)/Si junction quality and the photoresponse of the Schottky devices. We found that thinner layers of PEI could decrease the dark current and improve the photo-to-dark ratio to 105 for n-Si devices. The s-kink effect and degradation of open circuit voltage could be observed for thicker thickness and excessive doping. Relatively, PEIE with stable thin layer not only improve the rectifying characteristics of p-Si devices but also the incident photon conversion efficiency. The maximus IPCE could reach 44% and be adjusted to zero by the reverse bias. The tunneling inhibition for electrons can be alleviated by increasing the barrier height. Our results provide an attractive method to improve the efficiency of pristine GNWs/Si junction with interface doping and passivation.

Peltier cooling in molecular junctions

Science.gov (United States)

Cui, Longji; Miao, Ruijiao; Wang, Kun; Thompson, Dakotah; Zotti, Linda Angela; Cuevas, Juan Carlos; Meyhofer, Edgar; Reddy, Pramod

2018-02-01

The study of thermoelectricity in molecular junctions is of fundamental interest for the development of various technologies including cooling (refrigeration) and heat-to-electricity conversion1-4. Recent experimental progress in probing the thermopower (Seebeck effect) of molecular junctions5-9 has enabled studies of the relationship between thermoelectricity and molecular structure10,11. However, observations of Peltier cooling in molecular junctions—a critical step for establishing molecular-based refrigeration—have remained inaccessible. Here, we report direct experimental observations of Peltier cooling in molecular junctions. By integrating conducting-probe atomic force microscopy12,13 with custom-fabricated picowatt-resolution calorimetric microdevices, we created an experimental platform that enables the unified characterization of electrical, thermoelectric and energy dissipation characteristics of molecular junctions. Using this platform, we studied gold junctions with prototypical molecules (Au-biphenyl-4,4'-dithiol-Au, Au-terphenyl-4,4''-dithiol-Au and Au-4,4'-bipyridine-Au) and revealed the relationship between heating or cooling and charge transmission characteristics. Our experimental conclusions are supported by self-energy-corrected density functional theory calculations. We expect these advances to stimulate studies of both thermal and thermoelectric transport in molecular junctions where the possibility of extraordinarily efficient energy conversion has been theoretically predicted2-4,14.

Effect of cAMP derivates on assembly and maintenance of tight junctions in human umbilical vein endothelial cells

Directory of Open Access Journals (Sweden)

Beese Michaela

2010-09-01

Full Text Available Abstract Background Endothelial tight and adherens junctions control a variety of physiological processes like adhesion, paracellular transport of solutes or trafficking of activated leukocytes. Formation and maintenance of endothelial junctions largely depend on the microenvironment of the specific vascular bed and on interactions of the endothelium with adjacent cell types. Consequently, primary cultures of endothelial cells often lose their specific junctional pattern and fail to establish tight monolayer in vitro. This is also true for endothelial cells isolated from the vein of human umbilical cords (HUVEC which are widely used as model for endothelial cell-related studies. Results We here compared the effect of cyclic 3'-5'-adenosine monophosphate (cAMP and its derivates on formation and stabilization of tight junctions and on alterations in paracellular permeability in HUVEC. We demonstrated by light and confocal laser microscopy that for shorter time periods the sodium salt of 8-bromoadenosine-cAMP (8-Br-cAMP/Na and for longer incubation periods 8-(4-chlorophenylthio-cAMP (pCPT-cAMP exerted the greatest effects of all compounds tested here on formation of continuous tight junction strands in HUVEC. We further demonstrated that although all compounds induced protein kinase A-dependent expression of the tight junction proteins claudin-5 and occludin only pCPT-cAMP slightly enhanced paracellular barrier functions. Moreover, we showed that pCPT-cAMP and 8-Br-cAMP/Na induced expression and membrane translocation of tricellulin. Conclusions pCPT-cAMP and, to a lesser extend, 8-Br-cAMP/Na improved formation of continuous tight junction strands and decreased paracellular permeability in primary HUVEC. We concluded that under these conditions HUVEC represent a feasible in vitro model to study formation and disassembly of endothelial tight junctions and to characterize tight junction-associated proteins

Buffer layer dependence of magnetoresistance effects in Co2Fe0.4Mn0.6Si/MgO/Co50Fe50 tunnel junctions

Science.gov (United States)

Sun, Mingling; Kubota, Takahide; Takahashi, Shigeki; Kawato, Yoshiaki; Sonobe, Yoshiaki; Takanashi, Koki

2018-05-01

Buffer layer dependence of tunnel magnetoresistance (TMR) effects was investigated in Co2Fe0.4Mn0.6Si (CFMS)/MgO/Co50Fe50 magnetic tunnel junctions (MTJs). Pd, Ru and Cr were selected for the buffer layer materials, and MTJs with three different CFMS thicknesses (30, 5, and 0.8 nm) were fabricated. A maximum TMR ratio of 136% was observed in the Ru buffer layer sample with a 30-nm-thick CFMS layer. TMR ratios drastically degraded for the CFMS thickness of 0.8 nm, and the values were 26% for Cr buffer layer and less than 1% for Pd and Ru buffer layers. From the annealing temperature dependence of the TMR ratios, amounts of interdiffusion and effects from the lattice mismatch were discussed.

Effect of sound on gap-junction-based intercellular signaling: Calcium waves under acoustic irradiation.

Science.gov (United States)

Deymier, P A; Swinteck, N; Runge, K; Deymier-Black, A; Hoying, J B

2015-01-01

We present a previously unrecognized effect of sound waves on gap-junction-based intercellular signaling such as in biological tissues composed of endothelial cells. We suggest that sound irradiation may, through temporal and spatial modulation of cell-to-cell conductance, create intercellular calcium waves with unidirectional signal propagation associated with nonconventional topologies. Nonreciprocity in calcium wave propagation induced by sound wave irradiation is demonstrated in the case of a linear and a nonlinear reaction-diffusion model. This demonstration should be applicable to other types of gap-junction-based intercellular signals, and it is thought that it should be of help in interpreting a broad range of biological phenomena associated with the beneficial therapeutic effects of sound irradiation and possibly the harmful effects of sound waves on health.

Rapid synthesis of acetylcholine receptors at neuromuscular junctions.

Science.gov (United States)

Ramsay, D A; Drachman, D B; Pestronk, A

1988-10-11

The rate of acetylcholine receptor (AChR) degradation in mature, innervated mammalian neuromuscular junctions has recently been shown to be biphasic; up to 20% are rapidly turned over (RTOs; half life less than 1 day) whereas the remainder are lost more slowly ('stable' AChRs; half life 10-12 days). In order to maintain normal junctional receptor density, synthesis and insertion of AChRs should presumably be sufficiently rapid to replace both the RTOs and the stable receptors. We have tested this prediction by blocking pre-existing AChRs in the mouse sternomastoid muscle with alpha-bungarotoxin (alpha-BuTx), and monitoring the subsequent appearance of 'new' junctional AChRs at intervals of 3 h to 20 days by labeling them with 125I-alpha-BuTx. The results show that new receptors were initially inserted rapidly (16% at 24 h and 28% at 48 h). The rate of increase of 'new' 125I-alpha-BuTx binding sites gradually slowed down during the remainder of the time period studied. Control observations excluded possible artifacts of the experimental procedure including incomplete blockade of AChRs, dissociation of toxin-receptor complexes, or experimentally induced alteration of receptor synthesis. The present demonstration of rapid synthesis and incorporation of AChRs at innervated neuromuscular junctions provides support for the concept of a subpopulation of rapidly turned over AChRs. The RTOs may serve as precursors for the larger population of stable receptors and have an important role in the metabolism of the neuromuscular synapse.

Hard-hard coupling assisted anomalous magnetoresistance effect in amine-ended single-molecule magnetic junction

Science.gov (United States)

Tang, Y.-H.; Lin, C.-J.; Chiang, K.-R.

2017-06-01

We proposed a single-molecule magnetic junction (SMMJ), composed of a dissociated amine-ended benzene sandwiched between two Co tip-like nanowires. To better simulate the break junction technique for real SMMJs, the first-principles calculation associated with the hard-hard coupling between a amine-linker and Co tip-atom is carried out for SMMJs with mechanical strain and under an external bias. We predict an anomalous magnetoresistance (MR) effect, including strain-induced sign reversal and bias-induced enhancement of the MR value, which is in sharp contrast to the normal MR effect in conventional magnetic tunnel junctions. The underlying mechanism is the interplay between four spin-polarized currents in parallel and anti-parallel magnetic configurations, originated from the pronounced spin-up transmission feature in the parallel case and spiky transmission peaks in other three spin-polarized channels. These intriguing findings may open a new arena in which magnetotransport and hard-hard coupling are closely coupled in SMMJs and can be dually controlled either via mechanical strain or by an external bias.

Valley dependent transport in graphene L junction

Science.gov (United States)

Chan, K. S.

2018-05-01

We studied the valley dependent transport in graphene L junctions connecting an armchair lead and a zigzag lead. The junction can be used in valleytronic devices and circuits. Electrons injected from the armchair lead into the junction is not valley polarized, but they can become valley polarized in the zigzag lead. There are Fermi energies, where the current in the zigzag lead is highly valley polarized and the junction is an efficient generator of valley polarized current. The features of the valley polarized current depend sensitively on the widths of the two leads, as well as the number of dimers in the armchair lead, because this number has a sensitive effect on the band structure of the armchair lead. When an external potential is applied to the junction, the energy range with high valley polarization is enlarged enhancing its function as a generator of highly valley polarized current. The scaling behavior found in other graphene devices is also found in L junctions, which means that the results presented here can be extended to junctions with larger dimensions after appropriate scaling of the energy.

Effect of Local Junction Losses in the Optimization of T-shaped Flow Channels

Science.gov (United States)

Kosaraju, Srinivas

2015-11-01

T-shaped channels are extensively used in flow distribution applications such as irrigation, chemical dispersion, gas pipelines and space heating and cooling. The geometry of T-shaped channels can be optimized to reduce the overall pressure drop in stem and branch sections. Results of such optimizations are in the form of geometric parameters such as the length and diameter ratios of the stem and branch sections. The traditional approach of this optimization accounts for the pressure drop across the stem and branch sections, however, ignores the pressure drop in the T-junction. In this paper, we conduct geometry optimization while including the effect of local junction losses in laminar flows. From the results, we are able to identify a non-dimensional parameter that can be used to predict the optimal geometric configurations. This parameter can also be used to identify the conditions in which the local junction losses can be ignored during the optimization.

Phase-dependent noise in Josephson junctions

Science.gov (United States)

Sheldon, Forrest; Peotta, Sebastiano; Di Ventra, Massimiliano

2018-03-01

In addition to the usual superconducting current, Josephson junctions (JJs) support a phase-dependent conductance related to the retardation effect of tunneling quasi-particles. This introduces a dissipative current with a memory-resistive (memristive) character that should also affect the current noise. By means of the microscopic theory of tunnel junctions we compute the complete current autocorrelation function of a Josephson tunnel junction and show that this memristive component gives rise to both a previously noted phase-dependent thermal noise, and an undescribed non-stationary, phase-dependent dynamic noise. As experiments are approaching ranges in which these effects may be observed, we examine the form and magnitude of these processes. Their phase dependence can be realized experimentally as a hysteresis effect and may be used to probe defects present in JJ based qubits and in other superconducting electronics applications.

Effects induced by γ-radiation on the noise in junction field-effect transistors belonging to monolithic processes

International Nuclear Information System (INIS)

Manfredi, P.F.; Re, V.; Manfredi, P.F.; Speziali, V.; Re, V.; Manfredi, P.F.; Speziali, V.

1999-01-01

The effects of γ-rays on the noise characteristics of junction field-effect transistors belonging to three monolithic technologies have been investigated. A substantially different behavior of the radiation-induced noise in N and P -channel JFETs was observed. This may result in interesting design considerations. (authors)

Ge-on-insulator tunneling FET with abrupt source junction formed by utilizing snowplow effect of NiGe

Science.gov (United States)

Matsumura, Ryo; Katoh, Takumi; Takaguchi, Ryotaro; Takenaka, Mitsuru; Takagi, Shinichi

2018-04-01

Tunneling field-effect transistors (TFETs) attract much attention for use in realizing next-generation low-power processors. In particular, Ge-on-insulator (GOI) TFETs are expected to realize low power operation with a high on-current/off-current (I on/I off) ratio, owing to their narrow bandgap. Here, to improve the performance of GOI-TFETs, a source junction with a high doping concentration and an abrupt impurity profile is essential. In this study, a snowplow effect of NiGe combined with low-energy BF2 + implantation has been investigated to realize an abrupt p+/n Ge junction for GOI n-channel TFETs. By optimizing the Ni thickness to form NiGe (thickness: 4 nm), an abrupt junction with a B profile abruptness of ˜5 nm/dec has been realized with a high doping concentration of around 1021 cm-3. The operation of GOI n-TFETs with this source junction having the abrupt B profile has been demonstrated, and the improvement of TFET properties such as the I on/I off ratio from 311 to 743 and the subthreshold slope from 368 to 239 mV/dec has been observed. This junction formation technology is attractive for enhancing the TFET performance.

Performance analysis of AlGaAs/GaAs tunnel junctions for ultra-high concentration photovoltaics

International Nuclear Information System (INIS)

García, I; Rey-Stolle, I; Algora, C

2012-01-01

An n ++ -GaAs/p ++ -AlGaAs tunnel junction with a peak current density of 10 100 A cm -2 is developed. This device is a tunnel junction for multijunction solar cells, grown lattice-matched on standard GaAs or Ge substrates, with the highest peak current density ever reported. The voltage drop for a current density equivalent to the operation of the multijunction solar cell up to 10 000 suns is below 5 mV. Trap-assisted tunnelling is proposed to be behind this performance, which cannot be justified by simple band-to-band tunnelling. The metal-organic vapour-phase epitaxy growth conditions, which are in the limits of the transport-limited regime, and the heavy tellurium doping levels are the proposed origins of the defects enabling trap-assisted tunnelling. The hypothesis of trap-assisted tunnelling is supported by the observed annealing behaviour of the tunnel junctions, which cannot be explained in terms of dopant diffusion or passivation. For the integration of these tunnel junctions into a triple-junction solar cell, AlGaAs barrier layers are introduced to suppress the formation of parasitic junctions, but this is found to significantly degrade the performance of the tunnel junctions. However, the annealed tunnel junctions with barrier layers still exhibit a peak current density higher than 2500 A cm -2 and a voltage drop at 10 000 suns of around 20 mV, which are excellent properties for tunnel junctions and mean they can serve as low-loss interconnections in multijunction solar cells working at ultra-high concentrations. (paper)

Josephson junctions with ferromagnetic interlayer

International Nuclear Information System (INIS)

Wild, Georg Hermann

2012-01-01

We report on the fabrication of superconductor/insulator/ferromagnetic metal/superconductor (Nb/AlO x /Pd 0.82 Ni 0.18 /Nb) Josephson junctions (SIFS JJs) with high critical current densities, large normal resistance times area products, and high quality factors. For these junctions, a transition from 0- to π-coupling is observed for a thickness d F =6 nm of the ferromagnetic Pd 0.82 Ni 0.18 interlayer. The magnetic field dependence of the critical current of the junctions demonstrates good spatial homogeneity of the tunneling barrier and ferromagnetic interlayer. Magnetic characterization shows that the Pd 0.82 Ni 0.18 has an out-of-plane anisotropy and large saturation magnetization indicating negligible dead layers at the interfaces. A careful analysis of Fiske modes up to about 400 GHz provides valuable information on the junction quality factor and the relevant damping mechanisms. Whereas losses due to quasiparticle tunneling dominate at low frequencies, at high frequencies the damping is explained by the finite surface resistance of the junction electrodes. High quality factors of up to 30 around 200 GHz have been achieved. They allow to study the junction dynamics, in particular the switching probability from the zero-voltage into the voltage state with and without microwave irradiation. The experiments with microwave irradiation are well explained within semi-classical models and numerical simulations. In contrast, at mK temperature the switching dynamics without applied microwaves clearly shows secondary quantum effects. Here, we could observe for the first time macroscopic quantum tunneling in Josephson junctions with a ferromagnetic interlayer. This observation excludes fluctuations of the critical current as a consequence of an unstable magnetic domain structure of the ferromagnetic interlayer and affirms the suitability of SIFS Josephson junctions for quantum information processing.

Josephson junctions with ferromagnetic interlayer

Energy Technology Data Exchange (ETDEWEB)

Wild, Georg Hermann

2012-03-04

We report on the fabrication of superconductor/insulator/ferromagnetic metal/superconductor (Nb/AlO{sub x}/Pd{sub 0.82}Ni{sub 0.18}/Nb) Josephson junctions (SIFS JJs) with high critical current densities, large normal resistance times area products, and high quality factors. For these junctions, a transition from 0- to {pi}-coupling is observed for a thickness d{sub F}=6 nm of the ferromagnetic Pd{sub 0.82}Ni{sub 0.18} interlayer. The magnetic field dependence of the critical current of the junctions demonstrates good spatial homogeneity of the tunneling barrier and ferromagnetic interlayer. Magnetic characterization shows that the Pd{sub 0.82}Ni{sub 0.18} has an out-of-plane anisotropy and large saturation magnetization indicating negligible dead layers at the interfaces. A careful analysis of Fiske modes up to about 400 GHz provides valuable information on the junction quality factor and the relevant damping mechanisms. Whereas losses due to quasiparticle tunneling dominate at low frequencies, at high frequencies the damping is explained by the finite surface resistance of the junction electrodes. High quality factors of up to 30 around 200 GHz have been achieved. They allow to study the junction dynamics, in particular the switching probability from the zero-voltage into the voltage state with and without microwave irradiation. The experiments with microwave irradiation are well explained within semi-classical models and numerical simulations. In contrast, at mK temperature the switching dynamics without applied microwaves clearly shows secondary quantum effects. Here, we could observe for the first time macroscopic quantum tunneling in Josephson junctions with a ferromagnetic interlayer. This observation excludes fluctuations of the critical current as a consequence of an unstable magnetic domain structure of the ferromagnetic interlayer and affirms the suitability of SIFS Josephson junctions for quantum information processing.

Controlling the thermoelectric effect by mechanical manipulation of the electron's quantum phase in atomic junctions.

Science.gov (United States)

Aiba, Akira; Demir, Firuz; Kaneko, Satoshi; Fujii, Shintaro; Nishino, Tomoaki; Tsukagoshi, Kazuhito; Saffarzadeh, Alireza; Kirczenow, George; Kiguchi, Manabu

2017-08-11

The thermoelectric voltage developed across an atomic metal junction (i.e., a nanostructure in which one or a few atoms connect two metal electrodes) in response to a temperature difference between the electrodes, results from the quantum interference of electrons that pass through the junction multiple times after being scattered by the surrounding defects. Here we report successfully tuning this quantum interference and thus controlling the magnitude and sign of the thermoelectric voltage by applying a mechanical force that deforms the junction. The observed switching of the thermoelectric voltage is reversible and can be cycled many times. Our ab initio and semi-empirical calculations elucidate the detailed mechanism by which the quantum interference is tuned. We show that the applied strain alters the quantum phases of electrons passing through the narrowest part of the junction and hence modifies the electronic quantum interference in the device. Tuning the quantum interference causes the energies of electronic transport resonances to shift, which affects the thermoelectric voltage. These experimental and theoretical studies reveal that Au atomic junctions can be made to exhibit both positive and negative thermoelectric voltages on demand, and demonstrate the importance and tunability of the quantum interference effect in the atomic-scale metal nanostructures.

Stereoelectronic Effect-Induced Conductance Switching in Aromatic Chain Single-Molecule Junctions.

Science.gov (United States)

Xin, Na; Wang, Jinying; Jia, Chuancheng; Liu, Zitong; Zhang, Xisha; Yu, Chenmin; Li, Mingliang; Wang, Shuopei; Gong, Yao; Sun, Hantao; Zhang, Guanxin; Liu, Zhirong; Zhang, Guangyu; Liao, Jianhui; Zhang, Deqing; Guo, Xuefeng

2017-02-08

Biphenyl, as the elementary unit of organic functional materials, has been widely used in electronic and optoelectronic devices. However, over decades little has been fundamentally understood regarding how the intramolecular conformation of biphenyl dynamically affects its transport properties at the single-molecule level. Here, we establish the stereoelectronic effect of biphenyl on its electrical conductance based on the platform of graphene-molecule single-molecule junctions, where a specifically designed hexaphenyl aromatic chain molecule is covalently sandwiched between nanogapped graphene point contacts to create stable single-molecule junctions. Both theoretical and temperature-dependent experimental results consistently demonstrate that phenyl twisting in the aromatic chain molecule produces different microstates with different degrees of conjugation, thus leading to stochastic switching between high- and low-conductance states. These investigations offer new molecular design insights into building functional single-molecule electrical devices.

Geodynamical simulation of the RRF triple junction

Science.gov (United States)

Wang, Z.; Wei, D.; Liu, M.; Shi, Y.; Wang, S.

2017-12-01

Triple junction is the point at which three plate boundaries meet. Three plates at the triple junction form a complex geological tectonics, which is a natural laboratory to study the interactions of plates. This work studies a special triple junction, the oceanic transform fault intersects the collinear ridges with different-spreading rates, which is free of influence of ridge-transform faults and nearby hotspots. First, we build 3-D numerical model of this triple junction used to calculate the stead-state velocity and temperature fields resulting from advective and conductive heat transfer. We discuss in detail the influence of the velocity and temperature fields of the triple junction from viscosity, spreading rate of the ridge. The two sides of the oceanic transform fault are different sensitivities to the two factors. And, the influence of the velocity mainly occurs within 200km of the triple junction. Then, we modify the model by adding a ridge-transform fault to above model and directly use the velocity structure of the Macquarie triple junction. The simulation results show that the temperature at both sides of the oceanic transform fault decreases gradually from the triple junction, but the temperature difference between the two sides is a constant about 200°. And, there is little effect of upwelling velocity away from the triple junction 100km. The model results are compared with observational data. The heat flux and thermal topography along the oceanic transform fault of this model are consistent with the observed data of the Macquarie triple junction. The earthquakes are strike slip distributed along the oceanic transform fault. Their depths are also consistent with the zone of maximum shear stress. This work can help us to understand the interactions of plates of triple junctions and help us with the foundation for the future study of triple junctions.

Fibroblast growth factor signaling potentiates VE-cadherin stability at adherens junctions by regulating SHP2.

Directory of Open Access Journals (Sweden)

Kunihiko Hatanaka

Full Text Available The fibroblast growth factor (FGF system plays a critical role in the maintenance of vascular integrity via enhancing the stability of VE-cadherin at adherens junctions. However, the precise molecular mechanism is not well understood. In the present study, we aimed to investigate the detailed mechanism of FGF regulation of VE-cadherin function that leads to endothelial junction stabilization.In vitro studies demonstrated that the loss of FGF signaling disrupts the VE-cadherin-catenin complex at adherens junctions by increasing tyrosine phosphorylation levels of VE-cadherin. Among protein tyrosine phosphatases (PTPs known to be involved in the maintenance of the VE-cadherin complex, suppression of FGF signaling reduces SHP2 expression levels and SHP2/VE-cadherin interaction due to accelerated SHP2 protein degradation. Increased endothelial permeability caused by FGF signaling inhibition was rescued by SHP2 overexpression, indicating the critical role of SHP2 in the maintenance of endothelial junction integrity.These results identify FGF-dependent maintenance of SHP2 as an important new mechanism controlling the extent of VE-cadherin tyrosine phosphorylation, thereby regulating its presence in adherens junctions and endothelial permeability.

Effect of peroral endoscopic myotomy on esophagogastric junction physiology in patients with achalasia

NARCIS (Netherlands)

Verlaan, Tessa; Rohof, Wout O.; Bredenoord, Albert J.; Eberl, Susanne; Rösch, Thomas; Fockens, Paul

2013-01-01

Pneumatic dilation and laparoscopic Heller myotomy improve parameters of esophageal function such as lower esophageal sphincter (LES) pressure, esophageal emptying, and esophagogastric junction (EGJ) distensibility. To evaluate the effect of peroral endoscopic myotomy (POEM) on esophagogastric

Four-junction superconducting circuit

Science.gov (United States)

Qiu, Yueyin; Xiong, Wei; He, Xiao-Ling; Li, Tie-Fu; You, J. Q.

2016-01-01

We develop a theory for the quantum circuit consisting of a superconducting loop interrupted by four Josephson junctions and pierced by a magnetic flux (either static or time-dependent). In addition to the similarity with the typical three-junction flux qubit in the double-well regime, we demonstrate the difference of the four-junction circuit from its three-junction analogue, including its advantages over the latter. Moreover, the four-junction circuit in the single-well regime is also investigated. Our theory provides a tool to explore the physical properties of this four-junction superconducting circuit. PMID:27356619

Negative differential resistance observed from vertical p+-n+ junction device with two-dimensional black phosphorous

Science.gov (United States)

Lee, Daeyeong; Jang, Young Dae; Kweon, Jaehwan; Ryu, Jungjin; Hwang, Euyheon; Yoo, Won Jong; Samsung-SKKU Graphene/2D Center (SSGC) Collaboration

A vertical p+-n+ homojunction was fabricated by using black phosphorus (BP) as a van der Waals two-dimensional (2D) material. The top and bottom layers of the materials were doped by chemical dopants of gold chloride (AuCl3) for p-type doping and benzyl viologen (BV) for n-type doping. The negative differential resistance (NDR) effect was clearly observed from the output curves of the fabricated BP vertical devices. The thickness range of the 2D material showing NDR and the peak to valley current ratio of NDR are found to be strongly dependent on doping condition, gate voltage, and BP's degradation level. Furthermore, the carrier transport of the p+-n+ junction was simulated by using density functional theory (DFT) and non-equilibrium Green's function (NEGF). Both the experimental and simulation results confirmed that the NDR is attributed to the band-to-band tunneling (BTBT) across the 2D BP p+-n+ junction, and further quantitative details on the carrier transport in the vertical p+-n+ junction devices were explored, according to the analyses of the measured transfer curves and the DFT simulation results. This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MEST) (2013R1A2A2A01015516).

Hydrogen doping of Indium Tin Oxide due to thermal treatment of hetero-junction solar cells

Energy Technology Data Exchange (ETDEWEB)

Ritzau, Kurt-Ulrich, E-mail: kurt-ulrich.ritzau@ise.fraunhofer.de [Fraunhofer Institute for Solar Energy Systems (ISE), Heidenhofstrasse 2, 79110 Freiburg (Germany); Behrendt, Torge [Infineon Technologies, Max-Planck-Straße 5, 59581 Warstein (Germany); Palaferri, Daniele [Laboratoire Matériaux et Phénomènes Quantiques, Université Paris Diderot, Sorbonne Paris Cité, CNRS—UMR 7162, 75013 Paris (France); Bivour, Martin; Hermle, Martin [Fraunhofer Institute for Solar Energy Systems (ISE), Heidenhofstrasse 2, 79110 Freiburg (Germany)

2016-01-29

Indium Tin Oxide (ITO) layers in silicon hetero junction solar cells change their electrical and optical properties when exposed to temperature treatments. Hydrogen which effuses from underlying amorphous silicon layers is identified to dope the ITO layer. This leads to an additional increase in conductivity. In this way an almost isolating ITO can become degenerately doped through temperature treatments. The resulting carrier density in the range of 10{sup 20} cm{sup −3} leads to a substantial increase in free carrier absorption, which in turn leads to an increased parasitic absorption in the cell device. Thus hydrogen effusion in silicon hetero-junction (SHJ) solar cells does not only affect the degradation of amorphous silicon (a-Si:H) passivation of crystalline silicon (c-Si), but also the electrical and optical properties of both front and back ITO layers. This leads to the further design rule for SHJ solar cells, meaning that ITO properties have to be optimized in the state after modification during temperature treatment. - Highlights: • ITO is additionally doped by heat treatment of silicon hetero-junction solar cells. • The discovered effect turns an almost isolating ITO into a degenerately doped TCO. • TCO properties have to be considered as measured in the final cell.

Study of seed layer effect in nuclear battery with P-N diode junction

Energy Technology Data Exchange (ETDEWEB)

Uhm, Young Rang; Son, Kwang Jae; Lee, Jun Sig [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of); Choi, Byoung Gun [Kookmin Univ., Seoul (Korea, Republic of)

2014-10-15

A nuclear battery with diode junction is a device that converts nuclear radiation directly to electric power. The mechanism of a nuclear battery is same as the P-N junction diode for solar cell application. The photovoltaic is operated by converted photons to electrical energy in the junction. In betavoltaic battery, beta particles are collected and converted to electrical energy as similar principle as photovoltaic. A very low current, order of nano or micro amps, is generated in devices. If a radioisotope (RI) with a long halflife (over 50 years) is used, a lifetime of a power source is extended as long as halflife time of RI.. Some special applications require long-lived compact power sources. These include space equipment, sensors in remote locations (space, underground, etc.), and implantable medical devices. Conventionally, these sources rely on converting chemical energy to electricity. This means they require a large storage of chemical 'fuel' since the amount of energy released per reaction is small. The nuclear battery is a novel solution to solve the power needs of these applications. For the {sup 63}Ni beta-source we used, the half-life is 100.2 years. Hence, the power sources we describe could extend a system's operating life by several decades or even a century, during which time the system could gain learned behavior without worrying about the power turning off. Radioactive thin-film-based power sources also have energy density orders of magnitude higher than chemical-reaction-based energy sources. In this study, we fabricate nuclear battery using {sup 63}Ni source with diode junction, and studied seed layer effect for optimization of structure of p-n junction.

Scattering theory of superconductive tunneling in quantum junctions

International Nuclear Information System (INIS)

Shumeiko, V.S.; Bratus', E.N.

1997-01-01

A consistent theory of superconductive tunneling in single-mode junctions within a scattering formulation of Bogolyubov-de Gennes quantum mechanics is presented. The dc Josephson effect and dc quasiparticle transport in the voltage-biased junctions are considered. Elastic quasiparticle scattering by the junction determines the equilibrium Josephson current. The origin of Andreev bound states in tunnel junctions and their role in equilibrium Josephson transport are discussed. In contrast, quasiparticle tunneling in voltage-biased junctions is determined by inelastic scattering. A general expression for inelastic scattering amplitudes is derived and the quasiparticle current is calculated at all voltages with emphasis on a discussion of the properties of sub gap tunnel current and the nature of subharmonic gap structure

The beneficial effects of cumulus cells and oocyte-cumulus cell gap junctions depends on oocyte maturation and fertilization methods in mice

Directory of Open Access Journals (Sweden)

Cheng-Jie Zhou

2016-03-01

Full Text Available Cumulus cells are a group of closely associated granulosa cells that surround and nourish oocytes. Previous studies have shown that cumulus cells contribute to oocyte maturation and fertilization through gap junction communication. However, it is not known how this gap junction signaling affects in vivo versus in vitro maturation of oocytes, and their subsequent fertilization and embryonic development following insemination. Therefore, in our study, we performed mouse oocyte maturation and insemination using in vivo- or in vitro-matured oocyte-cumulus complexes (OCCs, which retain gap junctions between the cumulus cells and the oocytes, in vitro-matured, denuded oocytes co-cultured with cumulus cells (DCs, which lack gap junctions between the cumulus cells and the oocytes, and in vitro-matured, denuded oocytes without cumulus cells (DOs. Using these models, we were able to analyze the effects of gap junction signaling on oocyte maturation, fertilization, and early embryo development. We found that gap junctions were necessary for both in vivo and in vitro oocyte maturation. In addition, for oocytes matured in vivo, the presence of cumulus cells during insemination improved fertilization and blastocyst formation, and this improvement was strengthened by gap junctions. Moreover, for oocytes matured in vitro, the presence of cumulus cells during insemination improved fertilization, but not blastocyst formation, and this improvement was independent of gap junctions. Our results demonstrate, for the first time, that the beneficial effect of gap junction signaling from cumulus cells depends on oocyte maturation and fertilization methods.

Quasiparticle current in superconductor-semiconductor-superconductor junctions

International Nuclear Information System (INIS)

Tartakovskij, A.V.; Fistul', M.V.

1988-01-01

It is shown that the quasiparticle current in a superconductor-semiconductor-superconductor junction may significantly increase as a result of resonant passage of the quasiparticle along particular trajectories from periodically situated localized centers. A prediction of the theory is that with increasing junction resistance there should be a change from an excessive current to a insufficient current on the current-voltage characteristics (at high voltages). The effect of transparency of the boundaries on resonance tunneling in such junctions is also investigated

Degradation modeling with application to aging and maintenance effectiveness evaluations

International Nuclear Information System (INIS)

Samanta, P.K.; Hsu, F.; Subduhi, M.; Vesely, W.E.

1990-01-01

This paper describes a modeling approach to analyze component degradation and failure data to understand the aging process of components. As used here, degradation modeling is the analysis of information on component degradation in order to develop models of the process and its implications. This particular modeling focuses on the analysis of the times of component degradations, to model how the rate of degradation changes with the age of the component. The methodology presented also discusses the effectiveness of maintenance as applicable to aging evaluations. The specific applications which are performed show quantitative models of component degradation rates and component failure rates from plant-specific data. The statistical techniques which are developed and applied allow aging trends to be effectively identified in the degradation data, and in the failure data. Initial estimates of the effectiveness of maintenance in limiting degradations from becoming failures also are developed. These results are important first steps in degradation modeling, and show that degradation can be modeled to identify aging trends. 2 refs., 8 figs

Degradation modeling with application to aging and maintenance effectiveness evaluations

International Nuclear Information System (INIS)

Samanta, P.K.; Vesely, W.E.; Hsu, F.; Subudhi, M.

1991-01-01

This paper describes a modeling approach to analyze light water reactor component degradation and failure data to understand the aging process of components. As used here, degradation modeling is the analysis of information on component degradation in order to develop models of the process and its implications. This particular modeling focuses on the analysis of the times of component degradations, to model how the rate of degradation changes with the age of the component. The methodology presented also discusses the effectiveness of maintenance as applicable to aging evaluations. The specific applications which are performed show quantitative models of component degradation rates and component failure rates from plant-specific data. The statistical techniques which are developed and applied allow aging trends to be effectively identified in the degradation data, and in the failure data. Initial estimates of the effectiveness of maintenance in limiting degradations from becoming failures also are developed. These results are important first steps in degradation modeling, and show that degradation can be modeled to identify aging trends

Impaired activity of adherens junctions contributes to endothelial dilator dysfunction in ageing rat arteries.

Science.gov (United States)

Chang, Fumin; Flavahan, Sheila; Flavahan, Nicholas A

2017-08-01

Ageing-induced endothelial dysfunction contributes to organ dysfunction and progression of cardiovascular disease. VE-cadherin clustering at adherens junctions promotes protective endothelial functions, including endothelium-dependent dilatation. Ageing increased internalization and degradation of VE-cadherin, resulting in impaired activity of adherens junctions. Inhibition of VE-cadherin clustering at adherens junctions (function-blocking antibody; FBA) reduced endothelial dilatation in young arteries but did not affect the already impaired dilatation in old arteries. After junctional disruption with the FBA, dilatation was similar in young and old arteries. Src tyrosine kinase activity and tyrosine phosphorylation of VE-cadherin were increased in old arteries. Src inhibition increased VE-cadherin at adherens junctions and increased endothelial dilatation in old, but not young, arteries. Src inhibition did not increase dilatation in old arteries treated with the VE-cadherin FBA. Ageing impairs the activity of adherens junctions, which contributes to endothelial dilator dysfunction. Restoring the activity of adherens junctions could be of therapeutic benefit in vascular ageing. Endothelial dilator dysfunction contributes to pathological vascular ageing. Experiments assessed whether altered activity of endothelial adherens junctions (AJs) might contribute to this dysfunction. Aortas and tail arteries were isolated from young (3-4 months) and old (22-24 months) F344 rats. VE-cadherin immunofluorescent staining at endothelial AJs and AJ width were reduced in old compared to young arteries. A 140 kDa VE-cadherin species was present on the cell surface and in TTX-insoluble fractions, consistent with junctional localization. Levels of the 140 kDa VE-cadherin were decreased, whereas levels of a TTX-soluble 115 kDa VE-cadherin species were increased in old compared to young arteries. Acetylcholine caused endothelium-dependent dilatation that was decreased in old

Bounds on the Effect of Progressive Structural Degradation

DEFF Research Database (Denmark)

Achtziger, W.; Bendsøe, Martin P; Taylor, John E.

1998-01-01

Problem formulations are presented for the evaluation of upper and lower bounds on the effect of progressive structural degradation. For the purposes of this study, degradation effect is measured by an increase in global structural compliance (flexibility). Thus the slated bounds are given simply...

Bounds on the Effect of Progressive Structural Degradation

DEFF Research Database (Denmark)

Achtziger, Wolfgang; Bendsøe, Martin P; Taylor, John E.

1997-01-01

Problem formulations are presented for the evaluation of upper and lower bounds on the effect of progressive structural degradation. For the purposes of this study, degradation effect is measured by an increase in global structural compliance (flexibility). Thus the stated bounds are given simply...

Fabricaion of improved novel p–n junction BiOI/Bi{sub 2}Sn{sub 2}O{sub 7} nanocomposite for visible light driven photocatalysis

Energy Technology Data Exchange (ETDEWEB)

Xu, Weicheng [School of Chemistry and Environment, South China Normal University, Guangzhou 510006, Guangdong (China); Fang, Jianzhang, E-mail: fangjzh@scnu.edu.cn [School of Chemistry and Environment, South China Normal University, Guangzhou 510006, Guangdong (China); Guangdong Technology Research Center for Ecological Management and Remediation of Urban Water System, Guangzhou 510006 (China); Zhu, Ximiao [School of Chemistry and Environment, South China Normal University, Guangzhou 510006, Guangdong (China); Fang, Zhanqiang [School of Chemistry and Environment, South China Normal University, Guangzhou 510006, Guangdong (China); Guangdong Technology Research Center for Ecological Management and Remediation of Urban Water System, Guangzhou 510006 (China); Cen, Chaoping [The Key Laboratory of Water and Air Pollution Control of Guangdong Province, South China Institute of Environmental Sciences, Guangzhou 510655 (China)

2015-12-15

Graphical abstract: - Highlights: • A p–n heterojunction photocatalyst BiOI/Bi{sub 2}Sn{sub 2}O{sub 7} was prepared by hydrothermal method. • 4% BiOI/Bi{sub 2}Sn{sub 2}O{sub 7} with maximal photocatalytic degradation efficiency (RhB) of 99.9%. • A specific degradation routes of RhB was illustrated. • The photocatalytic mechanism is discussed according to p–n junction principles. • • O{sub 2}{sup −} and h+ are the main reactive species for the degradation of RhB. - Abstract: A series of novel p−n junction photocatalysts BiOI/Bi{sub 2}Sn{sub 2}O{sub 7} (BiOI/BSO) were successfully fabricated via a facile hydrothermal method. The phase structures, morphologies and optical properties of the as-prepared samples were studied by XRD, TEM, HRTEM, BET, XPS, UV–vis DRS and photoluminescence (PL) spectroscopy. The results showed that BiOI/BSO heteronanostructures displayed much higher photocatalytic activity than pure BSO and BiOI for the degradation of rhodamine B (RhB). The best photocatalytic activity of BiOI/BSO with almost 99.9% RhB degradation situated at molar percentage ratio of 4% after 6 h irradiation. The enhanced photocatalytic performance of BiOI/BSO could be mainly attributed to the formation of the heterojunction between p-BiOI and n-BSO, which effectively restrains the recombination of photoinduced electron–hole pairs. Moreover, the study of radical scavengers affirmed that h{sup +} and • O{sub 2}{sup −} were the primary reactive species for the degradation of RhB.

Potential profile and photovoltaic effect in nanoscale lateral pn junction observed by Kelvin probe force microscopy

International Nuclear Information System (INIS)

Nowak, Roland; Moraru, Daniel; Mizuno, Takeshi; Jablonski, Ryszard; Tabe, Michiharu

2014-01-01

Nanoscale pn junctions have been investigated by Kelvin probe force microscopy and several particular features were found. Within the depletion region, a localized noise area is observed, induced by temporal fluctuations of dopant states. Electronic potential landscape is significantly affected by dopants with ground-state energies deeper than in bulk. Finally, the effects of light illumination were studied and it was found that the depletion region shifts its position as a function of light intensity. This is ascribed to charge redistribution within the pn junction as a result of photovoltaic effect and due to the impact of deepened-level dopants. - Highlights: • In pn nano-junctions, temporal potential fluctuations are found in depletion layer. • Fluctuations are due to frequent capture and emission of free carriers by dopants. • Depletion layer position shifts as a function of the intensity of irradiated light. • The depletion layer shifts are due to changes of deep-level dopants' charge states

Effective horizons, junction conditions and large-scale magnetism

Energy Technology Data Exchange (ETDEWEB)

Giovannini, Massimo [CERN, Department of Physics, Theory Division, Geneva (Switzerland); INFN, Milan (Italy)

2017-08-15

The quantum mechanical generation of hypermagnetic and hyperelectric fields in four-dimensional conformally flat background geometries rests on the simultaneous continuity of the effective horizon and of the extrinsic curvature across the inflationary boundary. The junction conditions for the gauge fields are derived in general terms and corroborated by explicit examples with particular attention to the limit of a sudden (but nonetheless continuous) transition of the effective horizon. After reducing the dynamics to a pair of integral equations related by duality transformations, we compute the power spectra and deduce a novel class of logarithmic corrections which turn out to be, however, numerically insignificant and overwhelmed by the conductivity effects once the gauge modes reenter the effective horizon. In this perspective the magnetogenesis requirements and the role of the postinflationary conductivity are clarified and reappraised. As long as the total duration of the inflationary phase is nearly minimal, quasi-flat hypermagnetic power spectra are comparatively more common than in the case of vacuum initial data. (orig.)

Fractional Solitons in Excitonic Josephson Junctions

Science.gov (United States)

Su, Jung-Jung; Hsu, Ya-Fen

The Josephson effect is especially appealing because it reveals macroscopically the quantum order and phase. Here we study this effect in an excitonic Josephson junction: a conjunct of two exciton condensates with a relative phase ϕ0 applied. Such a junction is proposed to take place in the quantum Hall bilayer (QHB) that makes it subtler than in superconductor because of the counterflow of excitonic supercurrent and the interlayer tunneling in QHB. We treat the system theoretically by first mapping it into a pseudospin ferromagnet then describing it by the Landau-Lifshitz-Gilbert equation. In the presence of interlayer tunneling, the excitonic Josephson junction can possess a family of fractional sine-Gordon solitons that resemble the static fractional Josephson vortices in the extended superconducting Josephson junctions. Interestingly, each fractional soliton carries a topological charge Q which is not necessarily a half/full integer but can vary continuously. The resultant current-phase relation (CPR) shows that solitons with Q =ϕ0 / 2 π are the lowest energy states for small ϕ0. When ϕ0 > π , solitons with Q =ϕ0 / 2 π - 1 take place - the polarity of CPR is then switched.

Ballistic Graphene Josephson Junctions from the Short to the Long Junction Regimes.

Science.gov (United States)

Borzenets, I V; Amet, F; Ke, C T; Draelos, A W; Wei, M T; Seredinski, A; Watanabe, K; Taniguchi, T; Bomze, Y; Yamamoto, M; Tarucha, S; Finkelstein, G

2016-12-02

We investigate the critical current I_{C} of ballistic Josephson junctions made of encapsulated graphene-boron-nitride heterostructures. We observe a crossover from the short to the long junction regimes as the length of the device increases. In long ballistic junctions, I_{C} is found to scale as ∝exp(-k_{B}T/δE). The extracted energies δE are independent of the carrier density and proportional to the level spacing of the ballistic cavity. As T→0 the critical current of a long (or short) junction saturates at a level determined by the product of δE (or Δ) and the number of the junction's transversal modes.

Equivalent Josephson junctions

International Nuclear Information System (INIS)

Boyadzhiev, T.L.; ); Semerdzhieva, E.G.; Shukrinov, Yu.M.; Fiziko-Tekhnicheskij Inst., Dushanbe

2008-01-01

The magnetic field dependences of critical current are numerically constructed for a long Josephson junction with a shunt- or resistor-type microscopic inhomogeneities and compared to the critical curve of a junction with exponentially varying width. The numerical results show that it is possible to replace the distributed inhomogeneity of a long Josephson junction by an inhomogeneity localized at one of its ends, which has certain technological advantages. It is also shown that the critical curves of junctions with exponentially varying width and inhomogeneities localized at the ends are unaffected by the mixed fluxon-antifluxon distributions of the magnetic flux [ru

Junction and circuit fabrication

International Nuclear Information System (INIS)

Jackel, L.D.

1980-01-01

Great strides have been made in Josephson junction fabrication in the four years since the first IC SQUID meeting. Advances in lithography have allowed the production of devices with planar dimensions as small as a few hundred angstroms. Improved technology has provided ultra-high sensitivity SQUIDS, high-efficiency low-noise mixers, and complex integrated circuits. This review highlights some of the new fabrication procedures. The review consists of three parts. Part 1 is a short summary of the requirements on junctions for various applications. Part 2 reviews intergrated circuit fabrication, including tunnel junction logic circuits made at IBM and Bell Labs, and microbridge radiation sources made at SUNY at Stony Brook. Part 3 describes new junction fabrication techniques, the major emphasis of this review. This part includes a discussion of small oxide-barrier tunnel junctions, semiconductor barrier junctions, and microbridge junctions. Part 3 concludes by considering very fine lithography and limitations to miniaturization. (orig.)

Effect of injection angle, density ratio, and viscosity on droplet formation in a microfluidic T-junction

Directory of Open Access Journals (Sweden)

Mohammad Yaghoub Abdollahzadeh Jamalabadi

2017-07-01

Full Text Available The T-junction microchannel device makes available a sharp edge to form micro-droplets from bio-material solutions. This article investigates the effects of injection angle, flow rate ratio, density ratio, viscosity ratio, contact angle, and slip length in the process of formation of uniform droplets in microfluidic T-junctions. The governing equations were solved by the commercial software. The results show that contact angle, slip length, and injection angles near the perpendicular and parallel conditions have an increasing effect on the diameter of generated droplets, while flow rate, density and viscosity ratios, and other injection angles had a decreasing effect on the diameter. Keywords: Microfluidics, Droplet formation, Flow rate ratio, Density ratio

Caveolin1 Is Required for Th1 Cell Infiltration, but Not Tight Junction Remodeling, at the Blood-Brain Barrier in Autoimmune Neuroinflammation

Directory of Open Access Journals (Sweden)

Sarah E. Lutz

2017-11-01

Full Text Available Lymphocytes cross vascular boundaries via either disrupted tight junctions (TJs or caveolae to induce tissue inflammation. In the CNS, Th17 lymphocytes cross the blood-brain barrier (BBB before Th1 cells; yet this differential crossing is poorly understood. We have used intravital two-photon imaging of the spinal cord in wild-type and caveolae-deficient mice with fluorescently labeled endothelial tight junctions to determine how tight junction remodeling and caveolae regulate CNS entry of lymphocytes during the experimental autoimmune encephalomyelitis (EAE model for multiple sclerosis. We find that dynamic tight junction remodeling occurs early in EAE but does not depend upon caveolar transport. Moreover, Th1, but not Th17, lymphocytes are significantly reduced in the inflamed CNS of mice lacking caveolae. Therefore, tight junction remodeling facilitates Th17 migration across the BBB, whereas caveolae promote Th1 entry into the CNS. Moreover, therapies that target both tight junction degradation and caveolar transcytosis may limit lymphocyte infiltration during inflammation.

Effect of parallel transport currents on the d-wave Josephson junction

International Nuclear Information System (INIS)

Rashedi, Gholamreza

2009-01-01

In this paper, the non-local mixing of coherent current states in d-wave superconducting banks is investigated. The superconducting banks are connected via a ballistic point contact. The banks have mis-orientation and phase difference. Furthermore, they are subjected to a tangential transport current along the ab plane of d-wave crystals and parallel to the interface between the superconductors. The effects of mis-orientation and external transport current on the current-phase relations and current distributions are the subjects of this paper. It is observed that, at values of phase difference close to 0, π and 2π, the current distribution may have a vortex-like form in the vicinity of the point contact. The current distribution of the above-mentioned junction between d-wave superconductors is totally different from the junction between s-wave superconductors. The interesting result which this study shows is that spontaneous and Josephson currents are observed for the case of φ = 0.

Sputtered indium-tin oxide/cadmium telluride junctions and cadmium telluride surfaces

International Nuclear Information System (INIS)

Courreges, F.G.; Fahrenbruch, A.L.; Bube, R.H.

1980-01-01

The properties of indium-tin oxide (ITO)/CdTe junction solar cells prepared by rf sputtering of ITO on P-doped CdTe single-crystal substrates have been investigated through measurements of the electrical and photovoltaic properties of ITO/CdTe and In/CdTe junctions, and of electron beam induced currents (EBIC) in ITO/CdTe junctions. In addition, surface properties of CdTe related to the sputtering process were investigated as a function of sputter etching and thermal oxidation using the techniques of surface photovoltage and photoluminescence. ITO/CdTe cells prepared by this sputtering method consist of an n + -ITO/n-CdTe/p-CdTe buried homojunction with about a 1-μm-thick n-type CdTe layer formed by heating of the surface of the CdTe during sputtering. Solar efficiencies up to 8% have been observed with V/sub 0c/=0.82 V and J/sub s/c=14.5 mA/cm 2 . The chief degradation mechanism involves a decrease in V/sub 0c/ with a transformation of the buried homojunction structure to an actual ITO/CdTe heterojunction

Degradation Mechanisms for GaN and GaAs High Speed Transistors

Directory of Open Access Journals (Sweden)

Fan Ren

2012-11-01

Full Text Available We present a review of reliability issues in AlGaN/GaN and AlGaAs/GaAs high electron mobility transistors (HEMTs as well as Heterojunction Bipolar Transistors (HBTs in the AlGaAs/GaAs materials systems. Because of the complex nature and multi-faceted operation modes of these devices, reliability studies must go beyond the typical Arrhenius accelerated life tests. We review the electric field driven degradation in devices with different gate metallization, device dimensions, electric field mitigation techniques (such as source field plate, and the effect of device fabrication processes for both DC and RF stress conditions. We summarize the degradation mechanisms that limit the lifetime of these devices. A variety of contact and surface degradation mechanisms have been reported, but differ in the two device technologies: For HEMTs, the layers are thin and relatively lightly doped compared to HBT structures and there is a metal Schottky gate that is directly on the semiconductor. By contrast, the HBT relies on pn junctions for current modulation and has only Ohmic contacts. This leads to different degradation mechanisms for the two types of devices.

Degradation Mechanisms for GaN and GaAs High Speed Transistors

Science.gov (United States)

Cheney, David J.; Douglas, Erica A.; Liu, Lu; Lo, Chien-Fong; Gila, Brent P.; Ren, Fan; Pearton, Stephen J.

2012-01-01

We present a review of reliability issues in AlGaN/GaN and AlGaAs/GaAs high electron mobility transistors (HEMTs) as well as Heterojunction Bipolar Transistors (HBTs) in the AlGaAs/GaAs materials systems. Because of the complex nature and multi-faceted operation modes of these devices, reliability studies must go beyond the typical Arrhenius accelerated life tests. We review the electric field driven degradation in devices with different gate metallization, device dimensions, electric field mitigation techniques (such as source field plate), and the effect of device fabrication processes for both DC and RF stress conditions. We summarize the degradation mechanisms that limit the lifetime of these devices. A variety of contact and surface degradation mechanisms have been reported, but differ in the two device technologies: For HEMTs, the layers are thin and relatively lightly doped compared to HBT structures and there is a metal Schottky gate that is directly on the semiconductor. By contrast, the HBT relies on pn junctions for current modulation and has only Ohmic contacts. This leads to different degradation mechanisms for the two types of devices.

ProbeZT: Simulation of transport coefficients of molecular electronic junctions under environmental effects using Büttiker's probes

Science.gov (United States)

Korol, Roman; Kilgour, Michael; Segal, Dvira

2018-03-01

We present our in-house quantum transport package, ProbeZT. This program provides linear response coefficients: electrical and electronic thermal conductances, as well as the thermopower of molecular junctions in which electrons interact with the surrounding thermal environment. Calculations are performed based on the Büttiker probe method, which introduces decoherence, energy exchange and dissipation effects phenomenologically using virtual electrode terminals called probes. The program can realize different types of probes, each introducing various environmental effects, including elastic and inelastic scattering of electrons. The molecular system is described by an arbitrary tight-binding Hamiltonian, allowing the study of different geometries beyond simple one-dimensional wires. Applications of the program to study the thermoelectric performance of molecular junctions are illustrated. The program also has a built-in functionality to simulate electron transport in double-stranded DNA molecules based on a tight-binding (ladder) description of the junction.

The effects of the Histone Deacetylase (HDAC Inhibitor 4-Phenylbutyrate on gap junction conductance and permeability

Directory of Open Access Journals (Sweden)

Joshua eKaufman

2013-09-01

Full Text Available Longitudinal resistance is a key factor in determining cardiac action potential propagation. Action potential conduction velocity has been shown to be proportional to the square root of longitudinal resistance. A major determinant of longitudinal resistance in myocardium is the gap junction channel, comprised of connexin proteins. Within the ventricular myocardium connexin 43 (Cx43 is the dominantly expressed connexin. Reduced numbers of gap junction channels will result in an increase in longitudinal resistance creating the possibility of slowed conduction velocity while increased numbers of channels would potentially result in an increase in conduction velocity. We sought to determine if inhibition of histone deacetylase (HDAC by 4-phenylbutyrate (4-PB, a known inhibitor of HDAC resulted in an increase in junctional conductance and permeability, which is not the result of changes in single channel unitary conductance. These experiments were performed using HEK-293 cells and HeLa cells stably transfected with Cx43. Following treatment with increasing concentrations of 4-PB up-regulation of Cx43 was observed via Western blot analysis. Junctional (gj conductance and unitary single channel conductance were measured via whole-cell patch clamp. In addition intercellular transfer of Lucifer Yellow (LY was determined by fluorescence microscopy. The data in this study indicates that 4-PB is able to enhance functional Cx43 gap junction coupling as indicated by LY dye transfer and multichannel and single channel data along with Western blot analysis. As a corollary, pharmacological agents such as 4-PB have the potential, by increasing intercellular coupling, to reduce the effect of ischemia. It remains to be seen whether drugs like 4-PB will be effective in preventing cardiac maladies.

Droplet formation in microfluidic T-junction generators operating in the transitional regime. III. Dynamic surfactant effects.

Science.gov (United States)

Glawdel, Tomasz; Ren, Carolyn L

2012-08-01

This study extends our previous work on droplet generation in microfluidic T-junction generators to include dynamic interfacial tension effects created by the presence of surfactants. In Paper I [T. Glawdel, C. Elbuken, and C. L. Ren, Phys. Rev. E 85, 016322 (2012)], we presented experimental findings regarding the formation process in the squeezing-to-transition regime, and in Paper II [T. Glawdel, C. Elbuken, and C. L. Ren, Phys. Rev. E 85, 016323 (2012)] we developed a theoretical model that describes the performance of T-junction generators without surfactants. Here we study dynamic interfacial tension effects for two surfactants, one with a small molecular weight that adsorbs quickly, and the other with a large molecular weight that adsorbs slowly. Using the force balance developed in Paper II we extract the dynamic interfacial tension from high speed videos obtained during experiments. We then develop a theoretical model to predict the dynamic interfacial tension in microfluidic T-junction generators as a function of the surfactant properties, flow conditions, and generator design. This model is then incorporated into the overall model for generator performance to effectively predict the size of droplets produced when surfactants are present.

Electron transport in a bilayer graphene/layered superconductor NbSe2 junction: effect of work function difference

Science.gov (United States)

Yarimizu, Katsuhide; Tomori, Hikari; Watanabe, Kenji; Taniguchi, Takashi; Kanda, Akinobu

2018-03-01

We have experimentally studied electron transport in a bilayer graphene (BLG)/layered superconductor NbSe2 junction encapsulated with hexagonal boron nitride. The junction exhibits nonlinear current-voltage characteristics which strongly depend on the gate voltage around the charge neutrality point (CNP) of the BLG. Besides, we observe that the gate voltage dependence of electron transport in the BLG portion close to the junction interface is different from that of the BLG portion apart from the interface, indicating that the spatial variation of the Dirac point in the charge transfer region due to the difference in work function between superconductor and graphene needs to be considered in the analysis of the superconducting proximity effect.

Josephson junctions with ferromagnetic alloy interlayer

Energy Technology Data Exchange (ETDEWEB)

Himmel, Nico

2015-07-23

Josephson junctions are used as active devices in superconducting electronics and quantum information technology. Outstanding properties are their distinct non-linear electrical characteristics and a usually sinusoidal relation between the current and the superconducting phase difference across the junction. In general the insertion of ferromagnetic material in the barrier of a Josephson junction is associated with a suppression of superconducting correlations. But also new phenomena can arise which may allow new circuit layouts and enhance the performance of applications. This thesis presents a systematic investigation for two concepts to fabricate Josephson junctions with a rather uncommon negative critical current. Such devices exhibit an intrinsic phase slip of π between the electrodes, so they are also known as π junctions. Both studies go well beyond existing experiments and in one system a π junction is shown for the first time. All the thin film junctions are based on superconducting Nb electrodes. In a first approach, barriers made from Si and Fe were investigated with respect to the realisation of π junctions by spin-flip processes. The distribution of Fe in the Si matrix was varied from pure layers to disperse compounds. The systematic fabrication of alloy barriers was facilitated by the development of a novel timing-based combinatorial sputtering technique for planetary deposition systems. An orthogonal gradient approach allowed to create binary layer libraries with independent variations of thickness and composition. Second, Nb vertical stroke AlO{sub x} vertical stroke Nb vertical stroke Ni{sub 60}Cu{sub 40} vertical stroke Nb (SIsFS) double barrier junctions were experimentally studied for the occurrence of proximity effect induced order parameter oscillations. Detailed dependencies of the critical current density on the thickness of s-layer and F-layer were acquired and show a remarkable agreement to existing theoretical predictions. Especially

Josephson junctions with ferromagnetic alloy interlayer

International Nuclear Information System (INIS)

Himmel, Nico

2015-01-01

Josephson junctions are used as active devices in superconducting electronics and quantum information technology. Outstanding properties are their distinct non-linear electrical characteristics and a usually sinusoidal relation between the current and the superconducting phase difference across the junction. In general the insertion of ferromagnetic material in the barrier of a Josephson junction is associated with a suppression of superconducting correlations. But also new phenomena can arise which may allow new circuit layouts and enhance the performance of applications. This thesis presents a systematic investigation for two concepts to fabricate Josephson junctions with a rather uncommon negative critical current. Such devices exhibit an intrinsic phase slip of π between the electrodes, so they are also known as π junctions. Both studies go well beyond existing experiments and in one system a π junction is shown for the first time. All the thin film junctions are based on superconducting Nb electrodes. In a first approach, barriers made from Si and Fe were investigated with respect to the realisation of π junctions by spin-flip processes. The distribution of Fe in the Si matrix was varied from pure layers to disperse compounds. The systematic fabrication of alloy barriers was facilitated by the development of a novel timing-based combinatorial sputtering technique for planetary deposition systems. An orthogonal gradient approach allowed to create binary layer libraries with independent variations of thickness and composition. Second, Nb vertical stroke AlO x vertical stroke Nb vertical stroke Ni 60 Cu 40 vertical stroke Nb (SIsFS) double barrier junctions were experimentally studied for the occurrence of proximity effect induced order parameter oscillations. Detailed dependencies of the critical current density on the thickness of s-layer and F-layer were acquired and show a remarkable agreement to existing theoretical predictions. Especially a variation of

Effects of adenine nucleotide and sterol depletion on tight junction structure and function in MDCK cells

International Nuclear Information System (INIS)

Ladino, C.A.

1988-01-01

The antitumor agent Hadacidin (H), N-formyl-hydroxyamino-acetic acid, reversibly inhibited the multiplication of clone 4 Madin-Darby canine kidney (MDCK) cells at a 4 mM concentration within 24-48 hours. Treated cells were arrested in the S phase of the cell cycle. Accompanying this action was a 16-fold increase in the area occupied b the cells and a refractoriness to trypsin treatment. To test whether this effect was due to an increase in tight junction integrity, electrical resistance (TER) was measured across H-treated monolayers. Addition of H at the onset of junction formation reversibly prevented the development of TER. ATP and cAMP levels were decreased by H, as well as the rate of [ 3 H]-leucine incorporation into protein. When 1 mM dibutyryl-cAMP (d.cAMP) and theophylline were added, H had no effect on cell division or protein synthesis, and TER was partially restored. The addition of 1 mM d.cAMP and 1 mM theophylline to control cultures decreased TER, indicating a biphasic effect on TER development/maintenance. In a separate study, the effect of sterol depletion on tight junctions formation/maintenance in wild-type MDCK cells was investigated

A cost effective degradation-based maintenance strategy under imperfect repair

International Nuclear Information System (INIS)

Wu, Fan; Niknam, Seyed A.; Kobza, John E.

2015-01-01

An optimization model is developed to minimize the total cost of imperfect degradation-based maintenance by determining an optimal interval of condition monitoring and the degradation level after imperfect preventive repairs. The decision model is based on a novel cost model that considers functional relationship between the expected degradation reduction and the cost of preventive repairs. The decision model is applied to simulated vibration signals with a variety of specifications of cost values and degradation model parameters. This study has initiated a new area for the research of cost effective maintenance strategies. The results clearly indicate the significance of the proposed model and the decision variables under the objective of minimal cost. For instance, the results indicate direct relationship between the optimal length of monitoring interval and the monitoring cost. However, longer monitoring interval increases the risk of failure, and therefore, more degradation reduction is needed. By increasing the slope of cumulative degradation, the cost effective strategy advocates taking more frequent monitoring. The optimal degradation level after each preventive repair is not so sensitive to the change in the degradation slope due to the uncertainty associated with degradation patterns. - Highlights: • Discuss the relationship of degradation reduction and maintenance cost. • Determine the optimal interval of condition monitoring with minimal cost. • Identify the optimal degradation level after imperfect preventive repairs. • Discuss the effects of change in the slope of cumulative degradation.

Shapiro and parametric resonances in coupled Josephson junctions

International Nuclear Information System (INIS)

Gaafar, Ma A; Shukrinov, Yu M; Foda, A

2012-01-01

The effect of microwave irradiation on the phase dynamics of intrinsic Josephson junctions in high temperature superconductors is investigated. We compare the current-voltage characteristics for a stack of coupled Josephson junctions under external irradiation calculated in the framework of CCJJ and CCJJ+DC models.

Transport properties of molecular junctions

CERN Document Server

Zimbovskaya, Natalya A

2013-01-01

A comprehensive overview of the physical mechanisms that control electron transport and the characteristics of metal-molecule-metal (MMM) junctions is presented. As far as possible, methods and formalisms presented elsewhere to analyze electron transport through molecules are avoided. This title introduces basic concepts—a description of the electron transport through molecular junctions—and briefly describes relevant experimental methods. Theoretical methods commonly used to analyze the electron transport through molecules are presented. Various effects that manifest in the electron transport through MMMs, as well as the basics of density-functional theory and its applications to electronic structure calculations in molecules are presented. Nanoelectronic applications of molecular junctions and similar systems are discussed as well. Molecular electronics is a diverse and rapidly growing field. Transport Properties of Molecular Junctions presents an up-to-date survey of the field suitable for researchers ...

Fabrication of BiOBr nanosheets@TiO{sub 2} nanobelts p–n junction photocatalysts for enhanced visible-light activity

Energy Technology Data Exchange (ETDEWEB)

Zhao, Yang [School of Chemical Engineering and Technology, Tianjin University, Tianjin 300072 (China); Huang, Xiang [School of Chemical Engineering and Technology, Tianjin University, Tianjin 300072 (China); School of Science, Tibet University, Lhasa 850000 (China); Tan, Xin [School of Science, Tibet University, Lhasa 850000 (China); Yu, Tao, E-mail: yutao@tju.edu.cn [School of Chemical Engineering and Technology, Tianjin University, Tianjin 300072 (China); Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin 300072 (China); Li, Xiangli [School of Environmental Science and Engineering, Tianjin University, Tianjin 300072 (China); Yang, Libin [College of Chemical Engineering and Materials Science, Tianjin University of Science & Technology, Tianjin Key Laboratory of Marine Resources and Chemistry, Tianjin 300457 (China); Wang, Shucong [School of Environmental Science and Engineering, Tianjin University, Tianjin 300072 (China)

2016-03-01

Graphical abstract: - Highlights: • BiOBr nanosheets@TiO{sub 2} nanobelts p–n junction photocatalysts have been synthesized. • The p–n junction photocatalysts improved water splitting and dye degradation activity. • BiOBr amount in the BiOBr@TiO{sub 2} photocatalysts was investigated. - Abstract: The construction of p–n junction structure is a smart strategy for improving the photocatalytic activity, since p–n junctions can inhibit the recombination of photo-induced charges. Herein, BiOBr nanosheets@TiO{sub 2} nanobelts p–n junction photocatalysts were prepared by assembling BiOBr nanosheets on the surface of TiO{sub 2} nanobelts via a hydrothermal route followed by a co-precipitation process. BiOBr@TiO{sub 2} p–n junction photocatalysts exhibited enhanced photocatalytic activity in photocatalytic H{sub 2} production over water splitting and photodegradation of Rhodamine B (RhB) under visible light irradiation. Mott–Schottky plots confirmed the formation of p–n junctions in the interface of BiOBr and TiO{sub 2}. The enhanced photocatalytic performance can be ascribed to the 1D nanostructure and the formation of p–n junctions. This work shows a potential application of low cost BiOBr as a substitute for noble metals in photocatalytic H{sub 2} production under visible light irradiation.

Macroscopic quantum tunneling in Josephson tunnel junctions and Coulomb blockade in single small tunnel junctions

International Nuclear Information System (INIS)

Cleland, A.N.

1991-04-01

Experiments investigating the process of macroscopic quantum tunneling in a moderately-damped, resistively shunted, Josephson junction are described, followed by a discussion of experiments performed on very small capacitance normal-metal tunnel junctions. The experiments on the resistively-shunted Josephson junction were designed to investigate a quantum process, that of the tunneling of the Josephson phase variable under a potential barrier, in a system in which dissipation plays a major role in the dynamics of motion. All the parameters of the junction were measured using the classical phenomena of thermal activation and resonant activation. Theoretical predictions are compared with the experimental results, showing good agreement with no adjustable parameters; the tunneling rate in the moderately damped (Q ∼ 1) junction is seen to be reduced by a factor of 300 from that predicted for an undamped junction. The phase is seen to be a good quantum-mechanical variable. The experiments on small capacitance tunnel junctions extend the measurements on the larger-area Josephson junctions from the region in which the phase variable has a fairly well-defined value, i.e. its wavefunction has a narrow width, to the region where its value is almost completely unknown. The charge on the junction becomes well-defined and is predicted to quantize the current through the junction, giving rise to the Coulomb blockade at low bias. I present the first clear observation of the Coulomb blockade in single junctions. The electrical environment of the tunnel junction, however, strongly affects the behavior of the junction: higher resistance leads are observed to greatly sharpen the Coulomb blockade over that seen with lower resistance leads. I present theoretical descriptions of how the environment influences the junctions; comparisons with the experimental results are in reasonable agreement

Field modulation of the critical current in magnetic Josephson junctions

International Nuclear Information System (INIS)

Blamire, M G; Smiet, C B; Banerjee, N; Robinson, J W A

2013-01-01

The dependence of the critical current of a simple Josephson junction on the applied magnetic field is well known and, for a rectangular junction, gives rise to the classic ‘Fraunhofer’ modulation with periodic zeros at the fields that introduce a flux quantum into the junction region. Much recent work has been performed on Josephson junctions that contain magnetic layers. The magnetization of such layers introduces additional flux into the junction and, for large junction areas or strong magnetic materials, can significantly distort the modulation of the critical current and strongly suppress the maximum critical current. The growing interest in junctions that induce odd-frequency triplet pairing in a ferromagnet, and the need to make quantitative comparisons with theory, mean that a full understanding of the role of magnetic barriers in controlling the critical current is necessary. This paper analyses the effect of magnetism and various magnetic configurations on Josephson critical currents; the overall treatment applies to junctions of general shape, but the specific cases of square and rectangular junctions are considered. (paper)

Josephson junctions of multiple superconducting wires

Science.gov (United States)

Deb, Oindrila; Sengupta, K.; Sen, Diptiman

2018-05-01

We study the spectrum of Andreev bound states and Josephson currents across a junction of N superconducting wires which may have s - or p -wave pairing symmetries and develop a scattering matrix based formalism which allows us to address transport across such junctions. For N ≥3 , it is well known that Berry curvature terms contribute to the Josephson currents; we chart out situations where such terms can have relatively large effects. For a system of three s -wave or three p -wave superconductors, we provide analytic expressions for the Andreev bound-state energies and study the Josephson currents in response to a constant voltage applied across one of the wires; we find that the integrated transconductance at zero temperature is quantized to integer multiples of 4 e2/h , where e is the electron charge and h =2 π ℏ is Planck's constant. For a sinusoidal current with frequency ω applied across one of the wires in the junction, we find that Shapiro plateaus appear in the time-averaged voltage across that wire for any rational fractional multiple (in contrast to only integer multiples in junctions of two wires) of 2 e /(ℏ ω ) . We also use our formalism to study junctions of two p -wave and one s -wave wires. We find that the corresponding Andreev bound-state energies depend on the spin of the Bogoliubov quasiparticles; this produces a net magnetic moment in such junctions. The time variation of these magnetic moments may be controlled by an external voltage applied across the junction. We discuss experiments which may test our theory.

Anchored PKA as a gatekeeper for gap junctions.

Science.gov (United States)

Pidoux, Guillaume; Taskén, Kjetil

2015-01-01

Anchored protein kinase A (PKA) bound to A Kinase Anchoring Protein (AKAP) mediates effects of localized increases in cAMP in defined subcellular microdomains and retains the specificity in cAMP-PKA signaling to distinct extracellular stimuli. Gap junctions are pores between adjacent cells constituted by connexin proteins that provide means of communication and transfer of small molecules. While the PKA signaling is known to promote human trophoblast cell fusion, the gap junction communication through connexin 43 (Cx43) is a prerequisite for this process. We recently demonstrated that trophoblast fusion is regulated by ezrin, a known AKAP, which binds to Cx43 and delivers PKA in the vicinity gap junctions. We found that disruption of the ezrin-Cx43 interaction abolished PKA-dependent phosphorylation of Cx43 as well as gap junction communication and subsequently cell fusion. We propose that the PKA-ezrin-Cx43 macromolecular complex regulating gap junction communication constitutes a general mechanism to control opening of Cx43 gap junctions by phosphorylation in response to cAMP signaling in various cell types.

Homo-junction ferroelectric field-effect-transistor memory device using solution-processed lithium-doped zinc oxide thin films

Science.gov (United States)

Nayak, Pradipta K.; Caraveo-Frescas, J. A.; Bhansali, Unnat. S.; Alshareef, H. N.

2012-06-01

High performance homo-junction field-effect transistor memory devices were prepared using solution processed transparent lithium-doped zinc oxide thin films for both the ferroelectric and semiconducting active layers. A highest field-effect mobility of 8.7 cm2/Vs was obtained along with an Ion/Ioff ratio of 106. The ferroelectric thin film transistors showed a low sub-threshold swing value of 0.19 V/dec and a significantly reduced device operating voltage (±4 V) compared to the reported hetero-junction ferroelectric transistors, which is very promising for low-power non-volatile memory applications.

Homo-junction ferroelectric field-effect-transistor memory device using solution-processed lithium-doped zinc oxide thin films

KAUST Repository

Nayak, Pradipta K.

2012-06-22

High performance homo-junction field-effect transistor memory devices were prepared using solution processed transparent lithium-doped zinc oxide thin films for both the ferroelectric and semiconducting active layers. A highest field-effect mobility of 8.7 cm2/Vs was obtained along with an Ion/Ioff ratio of 106. The ferroelectric thin filmtransistors showed a low sub-threshold swing value of 0.19 V/dec and a significantly reduced device operating voltage (±4 V) compared to the reported hetero-junction ferroelectrictransistors, which is very promising for low-power non-volatile memory applications.

Simulations of signal amplification and oscillations using a SNS junction

International Nuclear Information System (INIS)

Luiz, A.M.; Soares, V.; Nicolsky, R.

1998-01-01

A superconducting - normal metal - superconducting junction (SNS junction) may exhibit a low voltage negative differential resistance (LVNDR) effect over part of its current voltage characteristic (CVC). As the LVNDR effect is stable against a bias voltage at this CVC range, it should be possible to combine a SNS junction with conventional electronic circuits to obtain electronic devices such as mixers, amplifiers and oscillators. Making use of this remarkable effect, we show that an amplifier may be feasible by assembling a simple voltage divider made up of a SNS junction in series with a resistor. The amplifier circuit includes an adjustable DC voltage supply (the bias voltage) and an AC signal source with a given voltage. The SNS junction is connected in series with a resistor R. Choosing values of the load resistance R approximately equal to the module of the negative differential resistance (dV/dI), at the bias voltage, we may obtain large gains in this amplifier device. In order to get an oscillator, the SNS junction should be connected to a RLC tank circuit with a bias voltage adjusted in the range of the LVNDR region of its CVC. A power output of the order of one microwatt may be easily obtained. (orig.)

Josephson junction arrays

International Nuclear Information System (INIS)

Bindslev Hansen, J.; Lindelof, P.E.

1985-01-01

In this review we intend to cover recent work involving arrays of Josephson junctions. The work on such arrays falls naturally into three main areas of interest: 1. Technical applications of Josephson junction arrays for high-frequency devices. 2. Experimental studies of 2-D model systems (Kosterlitz-Thouless phase transition, commensurate-incommensurate transition in frustrated (flux) lattices). 3. Investigations of phenomena associated with non-equilibrium superconductivity in and around Josephson junctions (with high current density). (orig./BUD)

Particle detection with superconducting tunnel junctions

International Nuclear Information System (INIS)

Jany, P.

1990-08-01

At the Institute of Experimental Nuclear Physics of the University of Karlsruhe (TH) and at the Institute for Nuclear Physics of the Kernforschungszentrum Karlsruhe we started to produce superconducting tunnel junctions and to investigate them for their suitability as particle detectors. The required facilities for the production of tunnel junctions and the experimental equipments to carry out experiments with them were erected. Experiments are presented in which radiations of different kinds of particles could successfully be measured with the tunnel junctions produced. At first we succeeded in detectioning light pulses of a laser. In experiments with alpha-particles of an energy of 4,6 MeV the alpha-particles were detected with an energy resolution of 1,1%, and it was shown in specific experiments that the phonons originating from the deposition of energy by an alpha-particle in the substrate can be detected with superconducting tunnel junctions at the surface. On that occasion it turned out that the signals could be separated with respect to their point of origin (tunnel junction, contact leads, substrate). Finally X-rays with an energy of 6 keV were detected with an energy resolution of 8% in a test arrangement that makes use of the so-called trapping effect to read out a larger absorber volume. (orig.) [de

External magnetic field and self-field effects in stacked long Josephson junctions

DEFF Research Database (Denmark)

Carapella, G.; Costabile, G.; Mygind, Jesper

1996-01-01

We have fabricated and tested samples consisting of two long stacked Josephson junctions with direct access to the intermediate electrode, whose thickness is smaller than London penetration depth lambda(L). The electrodes are patterned so that the junctions can be independently biased in the over...

Electronic thermometry in tunable tunnel junction

Science.gov (United States)

Maksymovych, Petro

2016-03-15

A tunable tunnel junction thermometry circuit includes a variable width tunnel junction between a test object and a probe. The junction width is varied and a change in thermovoltage across the junction with respect to the change in distance across the junction is determined. Also, a change in biased current with respect to a change in distance across the junction is determined. A temperature gradient across the junction is determined based on a mathematical relationship between the temperature gradient, the change in thermovoltage with respect to distance and the change in biased current with respect to distance. Thermovoltage may be measured by nullifying a thermoelectric tunneling current with an applied voltage supply level. A piezoelectric actuator may modulate the probe, and thus the junction width, to vary thermovoltage and biased current across the junction. Lock-in amplifiers measure the derivatives of the thermovoltage and biased current modulated by varying junction width.

Opposite effects of the gap junction blocker octanol on focal cerebral ischemia occluded for different durations.

Science.gov (United States)

Ding, Wenting; Zhou, Lequan; Liu, Wei; Guan, Li; Li, Xiaoying; Liu, Haimei; Yan, Fuman; Xu, Jinwen; Zeng, Weiyong; Qiu, Min

2014-06-01

Protectants and executioners have been demonstrated to be used by gap junctions in focal cerebral ischemia. Certain researchers hypothesized that the opposite role of gap junctions may be associated with the injury extent, which has been demonstrated to be highly correlated with occlusion duration. In order to examine this hypothesis directly, the effects of octanol, a frequently used drug, were examined to investigate the role of gap junctions, in rats following middle cerebral artery occlusion (MCAO) for 30 min/2 h and 24 h reperfusion, respectively. Octanol significantly reduced the infarct volume following 2 h of occlusion concomitant with lower neurological deficits, whereas it enlarged the infarct volume following 30 min of occlusion. Consistently, octanol attenuated the number of transferase dUTP nick-end labeling (TUNEL) positive neurons in the hippocampal CA1 region following 2 h of occlusion, while opposite effects were observed for 30 min of occlusion. Further immunohistochemical studies demonstrated that the expression of B-cell leukemia-2 (Bcl-2, anti-apoptotic protein) was upregulated and that Bcl-2-associated X (Bax, proapoptotic protein) was downregulated following 2 h of occlusion in the octanol group compared with the ischemic group. Conversely, octanol downregulated the expression of the Bcl-2 protein concomitant with increased Bax protein following 30 min of occlusion. These results indicated that the gap junction blocker octanol can protect against ischemic injury following long-term occlusion, however, can aggravate ischemic injury following short-term occlusion.

Proliferation of sharp kinks on cosmic (super)string loops with junctions

International Nuclear Information System (INIS)

Binetruy, P.; Bohe, A.; Hertog, T.; Steer, D. A.

2010-01-01

Motivated by their effect on the gravitational wave signal emitted by cosmic strings, we study the dynamics of kinks on strings of different tensions meeting at junctions. The propagation of a kink through a Y junction leads to the formation of three 'daughter' kinks. Assuming a uniform distribution of the incoming wave vectors at the junction, we find there is a significant region of configuration space in which the sharpness of at least one of the daughter kinks is enhanced relative to the sharpness of the initial kink. For closed loops with junctions we show this leads to an exponential growth in time of very sharp kinks. Using numerical simulations of realistic, evolving cosmic string loops with junctions to calculate the distribution of kink amplitudes as a function of time, we show that loops of this kind typically develop several orders of magnitude of very sharp kinks before the two junctions collide. This collision, or other effects such as gravitational backreaction, may end the proliferation.

Macroscopic quantum effects in the zero voltage state of the current biased Josephson junction

International Nuclear Information System (INIS)

Clarke, J.; Devoret, M.H.; Martinis, J.; Esteve, D.

1985-05-01

When a weak microwave current is applied to a current-biased Josephson tunnel junction in the thermal limit the escape rate from the zero voltage state is enhanced when the microwave frequency is near the plasma frequency of the junction. The resonance curve is markedly asymmetric because of the anharmonic properties of the potential well: this behavior is well explained by a computer simulation using a resistively shunted junction model. This phenomenon of resonant activation enables one to make in situ measurements of the capacitance and resistance shunting the junction, including contributions from the complex impedance presented by the current leads. For the relatively large area junctions studied in these experiments, the external capacitive loading was relatively unimportant, but the damping was entirely dominated by the external resistance

Dynamics of Josephson junction arrays

International Nuclear Information System (INIS)

Hadley, P.

1989-01-01

The dynamics of Josephson junction arrays is a topic that lies at the intersection of the fields of nonlinear dynamics and Josephson junction technology. The series arrays considered here consist of several rapidly oscillating Josephson junctions where each junction is coupled equally to every other junction. The purpose of this study is to understand phaselocking and other cooperative dynamics of this system. Previously, little was known about high dimensional nonlinear systems of this sort. Numerical simulations are used to study the dynamics of these arrays. Three distinct types of periodic solutions to the array equations were observed as well as period doubled and chaotic solutions. One of the periodic solutions is the symmetric, in-phase solution where all of the junctions oscillate identically. The other two periodic solutions are symmetry-broken solutions where all of the junction do not oscillate identically. The symmetry-broken solutions are highly degenerate. As many as (N - 1) stable solutions can coexist for an array of N junctions. Understanding the stability of these several solutions and the transitions among them is vital to the design of useful devices

Thermionic refrigeration at CNT-CNT junctions

Science.gov (United States)

Li, C.; Pipe, K. P.

2016-10-01

Monte Carlo (MC) simulation is used to study carrier energy relaxation following thermionic emission at the junction of two van der Waals bonded single-walled carbon nanotubes (SWCNTs). An energy-dependent transmission probability gives rise to energy filtering at the junction, which is predicted to increase the average electron transport energy by as much as 0.115 eV, leading to an effective Seebeck coefficient of 386 μV/K. MC results predict a long energy relaxation length (˜8 μm) for hot electrons crossing the junction into the barrier SWCNT. For SWCNTs of optimal length, an analytical transport model is used to show that thermionic cooling can outweigh parasitic heat conduction due to high SWCNT thermal conductivity, leading to a significant cooling capacity (2.4 × 106 W/cm2).

Effect of the environment on the electrical conductance of the single benzene-1,4-diamine molecule junction

Directory of Open Access Journals (Sweden)

Shigeto Nakashima

2011-11-01

Full Text Available We investigated the effect of the environment on the electrical conductance of a single benzene-1,4-diamine (BDA molecule bridging Au electrodes, using the scanning tunneling microscope (STM. The conductance of the single BDA molecule junction decreased upon a change in the environment from tetraglyme, to mesitylene, to water, and finally to N2 gas, while the spread in the conductance value increased. The order of the conductance values of the single BDA molecule junction was explained by the strength of the interaction between the solvent molecules and the Au electrodes. The order of the spread in the conductance values was explained by the diversity in the coverage of the BDA molecule at metal electrodes and atomic and molecular motion of the single-molecule junction.

Homo-junction ferroelectric field-effect-transistor memory device using solution-processed lithium-doped zinc oxide thin films

KAUST Repository

Nayak, Pradipta K.; Caraveo-Frescas, J. A.; Bhansali, Unnat. S.; Alshareef, Husam N.

2012-01-01

High performance homo-junction field-effect transistor memory devices were prepared using solution processed transparent lithium-doped zinc oxide thin films for both the ferroelectric and semiconducting active layers. A highest field-effect mobility

Proximity effects and Josephson currents in ferromagnet. Spin-triplet superconductors junctions

International Nuclear Information System (INIS)

Terrade, Damien

2015-01-01

Spin-triplet superconductivity, first attached to the description of 3 He, is now generally considered to also occur in heavy-fermions compounds and in perovskite ruthenium oxide Sr 2 RuO 4 . The latter material is especially interesting since many experiments show strong evidences for a unitary chiral spin-triplet state. Moreover, the recent fabrication of thin heterostructures made of ferromagnetic SrRuO 3 on the top of Sr 2 RuO 4 strongly encourages new theoretical studies on the interplay between spin-triplet superconductor and ferromagnet in similar fashion to spin-singlet superconductors. Using an extended tight-binding Hamiltonian to model the superconductor, we discuss in this thesis the specific proximity effects of such interface by solving self-consistently the Bogoliubov-De Gennes equations on two- and three-dimensional lattices in the ballistic limit. We obtain the spatial profile of the superconducting order parameters at the interface as well as the spin-polarisation and the current across the Josephson junctions. In contrast to heterostructures made of spin-singlet superconductor, we show that the physical properties at the interface are not only controlled by the strength of the magnetization inside the ferromagnet but also by its orientation due to the existence of a finite pair spin projection of the spin-triplet Cooper pairs. We analyse in the first part the spin-polarisation and the Gibbs free energy at the three-dimensional ferromagnet-chiral spin-triplet superconductor interface. Then, the second part of the thesis is dedicated to the study of the Josephson junctions made of a chiral spin-triplet superconductor and a ferromagnetic barrier. More precisely, we analyse the existence of 0-π state transitions in two- and three-dimensional junctions with respect to the strength and the orientation of the magnetization. Finally, we study the proximity effects at the interface of helical spin-triplet superconductors. They differ from the chiral

Junction region of EWS-FLI1 fusion protein has a dominant negative effect in Ewing's sarcoma in vitro.

Science.gov (United States)

Jully, Babu; Vijayalakshmi, Ramshankar; Gopal, Gopisetty; Sabitha, Kesavan; Rajkumar, Thangarajan

2012-11-12

Ewing's sarcoma is a malignancy characterized by a specific 11:22 chromosomal translocation which generates a novel EWS-FLI1 fusion protein functioning as an aberrant transcription factor. In the present study, we have further characterized the junction region of the EWS-FLI1 fusion protein. In-silico model of EWS-FLI1 fusion protein was analysed for ligand binding sites, and a putative region (amino acid (aa) 251-343 of the type 1 fusion protein) in the vicinity of the fusion junction was cloned and expressed using bacterial expression. The recombinant protein was characterized by Circular Dichroism (CD). We then expressed aa 251-280 ectopically in Ewing's sarcoma cell-line and its effect on cell proliferation, tumorigenicity and expression of EWS-FLI1 target genes were analysed. Our modelling analysis indicated that Junction region (aa 251-343) encompasses potential ligand biding sites in the EWS-FLI1 protein and when expressed in bacteria was present as soluble form. Ectopically expressing this region in Ewing's sarcoma cells inhibited tumorigenicity, and EWS-FLI1 target genes indicating a dominant negative biological effect. Junction region can be exploited further as target for drug development in future to specifically target EWS-FLI1 in Ewing's Sarcoma.

The Control of Junction Flows

National Research Council Canada - National Science Library

Smith, Charles

1997-01-01

An experimental study of the effects of spatially-limited (i.e. localized) surface suction on unsteady laminar and turbulent junction flows was performed using hydrogen bubble flow visualization and Particle Image Velocimetry (PIV...

Chlorpromazine reduces the intercellular communication via gap junctions in mammalian cells

International Nuclear Information System (INIS)

Orellana, Juan A.; Palacios-Prado, Nicolas; Saez, Juan C.

2006-01-01

In the work presented herein, we evaluated the effect of chlorpromazine (CPZ) on gap junctions expressed by two mammalian cell types; Gn-11 cells (cell line derived from mouse LHRH neurons) and rat cortical astrocytes maintained in culture. We also attempted to elucidate possible mechanisms of action of CPZ effects on gap junctions. CPZ, in concentrations comparable with doses used to treat human diseases, was found to reduce the intercellular communication via gap junctions as evaluated with measurements of dye coupling (Lucifer yellow). In both cell types, maximal inhibition of functional gap junctions was reached within about 1 h of treatment with CPZ, an recovery was almost complete at about 5 h after CPZ wash out. In both cell types, CPZ treatment increased the phosphorylation state of connexin43 (Cx43), a gap junction protein subunit. Moreover, CPZ reduced the reactivity of Cx43 (immunofluorescence) at cell interfaces and concomitantly increased its reactivity in intracellular vesicles, suggesting an increased retrieval from and/or reduced insertion into the plasma membrane. CPZ also caused cellular retraction reducing cell-cell contacts in a reversible manner. The reduction in contact area might destabilize existing gap junctions and abrogate formation of new ones. Moreover, the CPZ-induced reduction in gap junctional communication may depend on the connexins (Cxs) forming the junctions. If Cx43 were the only connexin expressed, MAPK-dependent phosphorylation of this connexin would induce closure of gap junction channels

Tight junctions and human diseases.

Science.gov (United States)

Sawada, Norimasa; Murata, Masaki; Kikuchi, Keisuke; Osanai, Makoto; Tobioka, Hirotoshi; Kojima, Takashi; Chiba, Hideki

2003-09-01

Tight junctions are intercellular junctions adjacent to the apical end of the lateral membrane surface. They have two functions, the barrier (or gate) function and the fence function. The barrier function of tight junctions regulates the passage of ions, water, and various macromolecules, even of cancer cells, through paracellular spaces. The barrier function is thus relevant to edema, jaundice, diarrhea, and blood-borne metastasis. On the other hand, the fence function maintains cell polarity. In other words, tight junctions work as a fence to prevent intermixing of molecules in the apical membrane with those in the lateral membrane. This function is deeply involved in cancer cell biology, in terms of loss of cell polarity. Of the proteins comprising tight junctions, integral membrane proteins occludin, claudins, and JAMs have been recently discovered. Of these molecules, claudins are exclusively responsible for the formation of tight-junction strands and are connected with the actin cytoskeleton mediated by ZO-1. Thus, both functions of tight junctions are dependent on the integrity of the actin cytoskeleton as well as ATP. Mutations in the claudin14 and the claudin16 genes result in hereditary deafness and hereditary hypomagnesemia, respectively. Some pathogenic bacteria and viruses target and affect the tight-junction function, leading to diseases. In this review, the relationship between tight junctions and human diseases is summarized.

Effect of low and staggered gap quantum wells inserted in GaAs tunnel junctions

Science.gov (United States)

Louarn, K.; Claveau, Y.; Marigo-Lombart, L.; Fontaine, C.; Arnoult, A.; Piquemal, F.; Bounouh, A.; Cavassilas, N.; Almuneau, G.

2018-04-01

In this article, we investigate the impact of the insertion of either a type I InGaAs or a type II InGaAs/GaAsSb quantum well on the performances of MBE-grown GaAs tunnel junctions (TJs). The devices are designed and simulated using a quantum transport model based on the non-equilibrium Green’s function formalism and a 6-band k.p Hamiltonian. We experimentally observe significant improvements of the peak tunneling current density on both heterostructures with a 460-fold increase for a moderately doped GaAs TJ when the InGaAs QW is inserted at the junction interface, and a 3-fold improvement on a highly doped GaAs TJ integrating a type II InGaAs/GaAsSb QW. Thus, the simple insertion of staggered band lineup heterostructures enables us to reach a tunneling current well above the kA cm‑2 range, equivalent to the best achieved results for Si-doped GaAs TJs, implying very interesting potential for TJ-based components, such as multi-junction solar cells, vertical cavity surface emitting lasers and tunnel-field effect transistors.

Magnetic properties of slablike Josephson-junction arrays

International Nuclear Information System (INIS)

Chen, D.; Sanchez, A.; Hernando, A.

1994-01-01

Magnetic properties of infinitely long and wide slablike Josephson-junction arrays (JJA's) consisting of 2N+1 rows of grains are calculated for the dc Josephson effect with gauge-invariant phase differences. When N is large, the intergranular magnetization curve, M J (H), of the JJA's in low fields approaches that of uniform Josephson junctions with lengths equal to the thicknesses of the JJA's, but in a larger field interval, its amplitude is dually modulated with periods determined by the junction and void areas. M J (H) curves for small N are more complicated. The concept of Josephson vortices and the application of the results to high-T c superconductors are discussed

Macroscopic quantum tunneling in Josephson tunnel junctions and Coulomb blockade in single small tunnel junctions

International Nuclear Information System (INIS)

Cleland, A.N.

1991-01-01

Experiments investigated the process of macroscopic quantum tunneling in a moderately-damped, resistively shunted, Josephson junction are described, followed by a discussion of experiments performed on very-small-capacitance normal-metal tunnel junctions. The experiments on the resistively-shunted Josephson junction were designed to investigate a quantum process, that of the tunneling of the Josephson-phase variable under a potential barrier, in a system in which dissipation plays a major role in the dynamics of motion. All the parameters of the junction were measured using the classical phenomena of thermal activation and resonant activation. Theoretical predictions are compared with the experimental results, showing good agreement with no adjustable parameters. The experiments on small-capacitance tunnel junctions extend the measurements on the large-area Josephson junctions from the region in which the phase variable has a fairly well-defined value, i.e. its wave function has a narrow width, to the region where its value is almost completely unknown. The charge on the junction becomes well-defined and is predicted to quantize the current through the junction, giving rise to the Coulomb blockade at low bias

Increasing gap junctional coupling: a tool for dissecting the role of gap junctions

DEFF Research Database (Denmark)

Axelsen, Lene Nygaard; Haugan, Ketil; Stahlhut, Martin

2007-01-01

Much of our current knowledge about the physiological and pathophysiological role of gap junctions is based on experiments where coupling has been reduced by either chemical agents or genetic modification. This has brought evidence that gap junctions are important in many physiological processes....... In a number of cases, gap junctions have been implicated in the initiation and progress of disease, and experimental uncoupling has been used to investigate the exact role of coupling. The inverse approach, i.e., to increase coupling, has become possible in recent years and represents a new way of testing...... the role of gap junctions. The aim of this review is to summarize the current knowledge obtained with agents that selectively increase gap junctional intercellular coupling. Two approaches will be reviewed: increasing coupling by the use of antiarrhythmic peptide and its synthetic analogs...

Radiation degradation of alginate and some results of biological effect of degraded alginate on plants

International Nuclear Information System (INIS)

Hien, N.Q.; Hai, L.; Luan, L.Q.; Hanh, T.T.; Nagasawa, Naotsugu; Yoshii, Fumio; Makuuchi, Keizo; Kume, Tamikazu

2000-01-01

Radiation degradation yields (Gd) of alginate in aqueous solution with different concentration were determined by viscometry method. The relationship between Gd and the alginate concentration was found out as: Gd=33.5 x C -0.68 , with C% (w/v) and dry alginate referred to C=100%. An empirical equation for preparing degraded alginate with the desired low viscometry average molecular weight (Mv) by radiation was proposed. Alginate extracted directly horn seaweed'Sagassum, degraded by radiation was used for field experiments and results of the biological effect on plants (tea, carrot, chrysanthemum) were presented. (author)

Terahertz Mixing Characteristics of NbN Superconducting Tunnel Junctions and Related Astronomical Observations

Science.gov (United States)

Li, J.

2010-01-01

High-sensitivity superconducting SIS (superconductor-insulator-superconductor) mixers are playing an increasingly important role in the terahertz (THz) astronomical observation, which is an emerging research frontier in modern astrophysics. Superconducting SIS mixers with niobium (Nb) tunnel junctions have reached a sensitivity close to the quantum limit, but have a frequency limit about 0.7 THz (i.e., gap frequency of Nb tunnel junctions). Beyond this frequency Nb superconducting films will absorb energetic photons (i.e., energy loss) to break Cooper pairs, thereby resulting in significant degradation of the mixer performance. Therefore, it is of particular interest to develop THz superconducting SIS mixers incorporating tunnel junctions with a larger energy gap. Niobium-nitride (NbN) superconducting tunnel junctions have been long known for their large energy gap, almost double that of Nb ones. With the introduction of epitaxially grown NbN films, the fabrication technology of NbN superconducting tunnel junctions has been considerably improved in the recent years. Nevertheless, their performances are still not as good as Nb ones, and furthermore they are not yet demonstrated in real astronomical applications. Given the facts mentioned above, in this paper we systematically study the quantum mixing behaviors of NbN superconducting tunnel junctions in the THz regime and demonstrate an astronomical testing observation with a 0.5 THz superconducting SIS mixer developed with NbN tunnel junctions. The main results of this study include: (1) successful design and fabrication of a 0.4˜0.6 THz waveguide mixing circuit with the high-dielectric-constant MgO substrate; (2) successful fabrication of NbN superconducting tunnel junctions with the gap voltage reaching 5.6 mV and the quality factor as high as 15; (3) demonstration of a 0.5 THz waveguide NbN superconducting SIS mixer with a measured receiver noise temperature (no correction) as low as five times the quantum limit

Self-positioned thin Pb-alloy base electrode Josephson junction

International Nuclear Information System (INIS)

Kuroda, K.; Sato, K.

1986-01-01

A self-positioned thin (SPOT) Pb-alloy base electrode Josephson junction is developed. In this junction, a 50-nm thick Pb-alloy base electrode is restricted within the junction region on an Nb underlayer using a self-alignment technique. The grain size reduction and the base electrode area restriction greatly improve thermal cycling stability, where the thermal cycling tests of 4000 proposed junctions (5 x 5 μm 2 ) showed no failures after 4000 cycles. In addition, the elimination of insulator layer stress on the Pb-alloy base electrode rectifies the problem of size effect on current density. The Nb underlayers also serve to isolate the Pb-alloy base electrodes from the resistors

A study on the electric properties of single-junction GaAs solar cells under the combined radiation of low-energy protons and electrons

International Nuclear Information System (INIS)

Zhao Huijie; Wu Yiyong; Xiao Jingdong; He Shiyu; Yang Dezhuang; Sun Yanzheng; Sun Qiang; Lv Wei; Xiao Zhibin; Huang Caiyong

2008-01-01

Displacement damage induced by charged particle radiation is the main cause of degradation of orbital-service solar cells, while the radiation-induced ionization shows no permanent damage effect on their electrical properties. It is reported that in single crystal silicon solar cells, low-energy electron radiation does not exert permanent degradation of their properties, but the fluence of electron radiation exerts an influence on the damage magnitude under the combined radiation of protons and electrons. The electrical properties of the single-junction GaAs/Ge solar cells were investigated after irradiation by sequential and synchronous electron and proton beams. Low-energy electron radiation showed no effects on the change of the solar cell properties during sequential or synchronous irradiation, implying ionization during particle radiation could not exert influence on the displacement damage process to the solar cells under the experimental conditions

Total dose effects on elementary transistors of a comparator in bipolar technology

International Nuclear Information System (INIS)

Sarrabayrouse, G.; Guerre, F.X.

1995-01-01

In the present work we investigate elementary transistors behaviour of an Integrated Circuit using junction isolation bipolar technology. Polarization conditions and dose rate effects on the main elementary transistor types are analysed. Furthermore, the IC electronic function degradations are studied. Finally, a comparison between the function degradations and the elementary component ones is attempted. (author)

Preparation, characterization and activity evaluation of p-n junction photocatalyst p-CaFe2O4/n-Ag3VO4 under visible light irradiation

International Nuclear Information System (INIS)

Chen Shifu; Zhao Wei; Liu Wei; Zhang Huaye; Yu Xiaoling; Chen Yinghao

2009-01-01

p-n junction photocatalyst p-CaFe 2 O 4 /n-Ag 3 VO 4 was prepared by ball milling Ag 3 VO 4 in H 2 O doped with p-type CaFe 2 O 4 . The structural and optical properties of the photocatalyst were characterized by X-ray powder diffraction (XRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM) and UV-vis diffuse reflection spectrum (DRS). The photocatalytic activity was evaluated by photocatalytic degradation of methylene blue (MB) under visible light irradiation. The results showed that the photocatalytic activity of the p-CaFe 2 O 4 /n-Ag 3 VO 4 was higher than that of Ag 3 VO 4 . When the amount of doped p-CaFe 2 O 4 was 2.0 wt.% and the p-CaFe 2 O 4 /n-Ag 3 VO 4 was ball milled for 12 h, the photocatalytic degradation efficiency was 85.4%. Effect of ball milling time on the photocatalytic activity of the photocatalyst was also investigated. The mechanisms of the increase in the photocatalytic activity were discussed by the p-n junction principle.

Junction detection and pathway selection

Science.gov (United States)

Peck, Alex N.; Lim, Willie Y.; Breul, Harry T.

1992-02-01

The ability to detect junctions and make choices among the possible pathways is important for autonomous navigation. In our script-based navigation approach where a journey is specified as a script of high-level instructions, actions are frequently referenced to junctions, e.g., `turn left at the intersection.' In order for the robot to carry out these kind of instructions, it must be able (1) to detect an intersection (i.e., an intersection of pathways), (2) know that there are several possible pathways it can take, and (3) pick the pathway consistent with the high level instruction. In this paper we describe our implementation of the ability to detect junctions in an indoor environment, such as corners, T-junctions and intersections, using sonar. Our approach uses a combination of partial scan of the local environment and recognition of sonar signatures of certain features of the junctions. In the case where the environment is known, we use additional sensor information (such as compass bearings) to help recognize the specific junction. In general, once a junction is detected and its type known, the number of possible pathways can be deduced and the correct pathway selected. Then the appropriate behavior for negotiating the junction is activated.

Microstructure of Josephson junctions: Effect on supercurrent transport in YBCO grain boundary and barrier layer junctions

International Nuclear Information System (INIS)

Merkle, K.L.; Huang, Y.

1998-01-01

The electric transport of high-temperature superconductors, such as YBa 2 Cu 3 O 7-x (YBCO), can be strongly restricted by the presence of high-angle grain boundaries (GB). This weak-link behavior is governed by the macroscopic GB geometry and the microscopic grain boundary structure and composition at the atomic level. Whereas grain boundaries present a considerable impediment to high current applications of high T c materials, there is considerable commercial interest in exploiting the weak-link-nature of grain boundaries for the design of microelectronic devices, such as superconducting quantum interference devices (SQUIDs). The Josephson junctions which form the basis of this technology can also be formed by introducing artificial barriers into the superconductor. The authors have examined both types of Josephson junctions by EM techniques in an effort to understand the connection between microstructure/chemistry and electrical transport properties. This knowledge is a valuable resource for the design and production of improved devices

Numerical study of self-field effects on dynamics of Josephson-junction arrays

International Nuclear Information System (INIS)

Phillips, J.R.; Van der Zant, H.S.J.; White, J.; Orlando, T.P.

1994-01-01

We consider the influence of self-induced magnetic fields on dynamic properties of arrays of resistively and capacitively shunted Josephson junctions. Self-field effects are modeled by including mutual inductance interactions between every cell in the array. We find that it is important to include all mutual inductance interactions in order to understand the dynamic properties of the array, in particular subharmonic structure arising under AC current bias. (orig.)

Superconducting tunnel-junction refrigerator

International Nuclear Information System (INIS)

Melton, R.G.; Paterson, J.L.; Kaplan, S.B.

1980-01-01

The dc current through an S 1 -S 2 tunnel junction, with Δ 2 greater than Δ 1 , when biased with eV 1 +Δ 2 , will lower the energy in S 1 . This energy reduction will be shared by the phonons and electrons. This device is shown to be analogous to a thermoelectric refrigerator with an effective Peltier coefficient π* approx. Δ 1 /e. Tunneling calculations yield the cooling power P/sub c/, the electrical power P/sub e/ supplied by the bias supply, and the cooling efficiency eta=P/sub c//P/sub e/. The maximum cooling power is obtained for eV= +- (Δ 2 -Δ 1 ) and t 1 =T 1 /T/sub c/1 approx. 0.9. Estimates are made of the temperature difference T 2 -T 1 achievable in Al-Pb and Sn-Pb junctions with an Al 2 O 3 tunneling barrier. The performance of this device is shown to yield a maximum cooling efficiency eta approx. = Δ 1 /(Δ 2 -Δ 1 ) which can be compared with that available in an ideal Carnot refrigerator of eta=T 1 /(T 2 -T 1 ). The development of a useful tunnel-junction refrigerator requires a tunneling barrier with an effective thermal conductance per unit area several orders of magnitude less than that provided by the A1 2 O 3 barrier in the Al-Pb and Sn-Pb systems

Regulation of Endothelial Adherens Junctions by Tyrosine Phosphorylation

Science.gov (United States)

Adam, Alejandro Pablo

2015-01-01

Endothelial cells form a semipermeable, regulated barrier that limits the passage of fluid, small molecules, and leukocytes between the bloodstream and the surrounding tissues. The adherens junction, a major mechanism of intercellular adhesion, is comprised of transmembrane cadherins forming homotypic interactions between adjacent cells and associated cytoplasmic catenins linking the cadherins to the cytoskeleton. Inflammatory conditions promote the disassembly of the adherens junction and a loss of intercellular adhesion, creating openings or gaps in the endothelium through which small molecules diffuse and leukocytes transmigrate. Tyrosine kinase signaling has emerged as a central regulator of the inflammatory response, partly through direct phosphorylation and dephosphorylation of the adherens junction components. This review discusses the findings that support and those that argue against a direct effect of cadherin and catenin phosphorylation in the disassembly of the adherens junction. Recent findings indicate a complex interaction between kinases, phosphatases, and the adherens junction components that allow a fine regulation of the endothelial permeability to small molecules, leukocyte migration, and barrier resealing. PMID:26556953

Supramolecular tunneling junctions

NARCIS (Netherlands)

Wimbush, K.S.

2012-01-01

In this study a variety of supramolecular tunneling junctions were created. The basis of these junctions was a self-assembled monolayer of heptathioether functionalized ß-cyclodextrin (ßCD) formed on an ultra-flat Au surface, i.e., the bottom electrode. This gave a well-defined hexagonally packed

Evaluation of the performance degradation at PAFC effect of catalyst degradation on electrode performance

Energy Technology Data Exchange (ETDEWEB)

Nishizaki, K.; Uchida, H.; Watanabe, M. [Yamanashi Univ., Kofu (Japan)] [and others

1996-12-31

Aiming commercialization of Phosphoric Acid Fuel Cell (PAFC) power plant, many researches and developments have been contributed. Over 20000 hours operations have been demonstrated by many PAFC power plants. But there is no effective method for the estimation of lifetime of electrochemical cells without a practical long-term operation. Conducted by New Energy and Industrial Technology Development Organization (NEDO), cooperative research projects aiming development of PAFC lifetime estimation method have started since 1995 FY in Japan. As part of this project, this work has been performed to clarify basic phenomena of the performance degradation at PAFCs jointly by Yamanashi University, Phosphoric Acid Fuel Cell Technology Research Association (PAFC-TRA) and PAFC manufacturers (Toshiba Co., Mitsubishi Electric Co, Fuji Electric Co.). Among several main causes of the cell performance degradation, effects of catalyst degradation (reduction in metal surface area, dealloying, changes in catalyst support) on PAFC cathode performances are discussed in this work.

Phase diagrams of particles with dissimilar patches: X-junctions and Y-junctions

International Nuclear Information System (INIS)

Tavares, J M; Teixeira, P I C

2012-01-01

We use Wertheim’s first-order perturbation theory to investigate the phase behaviour and the structure of coexisting fluid phases for a model of patchy particles with dissimilar patches (two patches of type A and f B patches of type B). A patch of type α = {A,B} can bond to a patch of type β = {A,B} in a volume v αβ , thereby decreasing the internal energy by ε αβ . We analyse the range of model parameters where AB bonds, or Y-junctions, are energetically disfavoured (ε AB AA /2) but entropically favoured (v AB ≫ v αα ), and BB bonds, or X-junctions, are energetically favoured (ε BB > 0). We show that, for low values of ε BB /ε AA , the phase diagram has three different regions: (i) close to the critical temperature a low-density liquid composed of long chains and rich in Y-junctions coexists with a vapour of chains; (ii) at intermediate temperatures there is coexistence between a vapour of short chains and a liquid of very long chains with X- and Y-junctions; (iii) at low temperatures an ideal gas coexists with a high-density liquid with all possible AA and BB bonds formed. It is also shown that in region (i) the liquid binodal is reentrant (its density decreases with decreasing temperature) for the lower values of ε BB /ε AA . The existence of these three regions is a consequence of the competition between the formation of X- and Y-junctions: X-junctions are energetically favoured and thus dominate at low temperatures, whereas Y-junctions are entropically favoured and dominate at higher temperatures. (paper)

Hydration effect on the electronic transport properties of oligomeric phenylene ethynylene molecular junctions

International Nuclear Information System (INIS)

Zong-Liang, Li; Huai-Zhi, Li; Yong, Ma; Guang-Ping, Zhang; Chuan-Kui, Wang

2010-01-01

A first-principles computational method based on the hybrid density functional theory is developed to simulate the electronic transport properties of oligomeric phenylene ethynylene molecular junctions with H 2 O molecules accumulated in the vicinity as recently reported by Na et al. [Nanotechnology 18 424001 (2007)]. The numerical results show that the hydrogen bonds between the oxygen atoms of the oligomeric phenylene ethynylene molecule and H 2 O molecules result in the localisation of the molecular orbitals and lead to the lower transition peaks. The H 2 O molecular chains accumulated in the vicinity of the molecular junction can not only change the electronic structure of the molecular junctions, but also open additional electronic transport pathways. The obvious influence of H 2 O molecules on the electronic structure of the molecular junction and its electronic transport properties is thus demonstrated. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Effects of stretching and compression on conducting properties of an Au–alkanedithiol–Au molecular junction

Energy Technology Data Exchange (ETDEWEB)

Xie, Fang; Zhang, Xiao-Jiao; Yu, Ji-Hai; Xu, Hua; Chu, Yu-Fang [Physics Science and Engineering Technology College, Yichun University, Yichun 336000 (China); Fan, Zhi-Qiang, E-mail: fan0221@163.com [School of Physics and Electronic Science, Changsha University of Science and Technology, Changsha 410004 (China)

2016-03-01

We have studied the effects of stretching and compression on the electronic properties of 7-alkanedithiol covalently linked to two Au electrodes. Results show a progressive increase in conductivity upon molecule compression and decrease with molecule stretching. The notable conductance increase at high compression is attributed to a significant modification of HOMO and LUMO orbitals of the junction, which enhances electron delocalization and promotes tunneling across the junction. More important, the current switching ratios between the various stages of compressed/extended geometries almost maintain the constant values on the bias region from 0 V to 2 V. In other word, the mechanically-induced conductance enhancement and weakening are stable within a large bias voltage range.

Thermodynamic Analysis of TEG-TEC Device Including Influence of Thomson Effect

Science.gov (United States)

Feng, Yuanli; Chen, Lingen; Meng, Fankai; Sun, Fengrui

2018-01-01

A thermodynamic model of a thermoelectric cooler driven by thermoelectric generator (TEG-TEC) device is established considering Thomson effect. The performance is analyzed and optimized using numerical calculation based on non-equilibrium thermodynamic theory. The influence characteristics of Thomson effect on the optimal performance and variable selection are investigated by comparing the condition with and without Thomson effect. The results show that Thomson effect degrades the performance of TEG-TEC device, it decreases the cooling capacity by 27 %, decreases the coefficient of performance (COP) by 19 %, decreases the maximum cooling temperature difference by 11 % when the ratio of thermoelectric elements number is 0.6, the cold junction temperature of thermoelectric cooler (TEC) is 285 K and the hot junction temperature of thermoelectric generator (TEG) is 450 K. Thomson effect degrades the optimal performance of TEG-TEC device, it decreases the maximum cooling capacity by 28 % and decreases the maximum COP by 28 % under the same junction temperatures. Thomson effect narrows the optimal variable range and optimal working range. In the design of the devices, limited-number thermoelectric elements should be more allocated appropriately to TEG when consider Thomson effect. The results may provide some guidelines for the design of TEG-TEC devices.

Contour junctions defined by dynamic image deformations enhance perceptual transparency.

Science.gov (United States)

Kawabe, Takahiro; Nishida, Shin'ya

2017-11-01

The majority of work on the perception of transparency has focused on static images with luminance-defined contour junctions, but recent work has shown that dynamic image sequences with dynamic image deformations also provide information about transparency. The present study demonstrates that when part of a static image is dynamically deformed, contour junctions at which deforming and nondeforming contours are connected facilitate the deformation-based perception of a transparent layer. We found that the impression of a transparent layer was stronger when a dynamically deforming area was adjacent to static nondeforming areas than when presented alone. When contour junctions were not formed at the dynamic-static boundaries, however, the impression of a transparent layer was not facilitated by the presence of static surrounding areas. The effect of the deformation-defined junctions was attenuated when the spatial pattern of luminance contrast at the junctions was inconsistent with the perceived transparency related to luminance contrast, while the effect did not change when the spatial luminance pattern was consistent with it. In addition, the results showed that contour completions across the junctions were required for the perception of a transparent layer. These results indicate that deformation-defined junctions that involve contour completion between deforming and nondeforming regions enhance the perception of a transparent layer, and that the deformation-based perceptual transparency can be promoted by the simultaneous presence of appropriately configured luminance and contrast-other features that can also by themselves produce the sensation of perceiving transparency.

Theory of Josephson effect in d-wave superconductor/diffusive ferromagnet/d-wave superconductor junctions

NARCIS (Netherlands)

Yokoyama, T.; Tanaka, Y.; Golubov, Alexandre Avraamovitch

2007-01-01

We study Josephson effect in d-wave superconductor/diffusive ferromagnet/d-wave superconductor junctions, changing the exchange field and the angles between the normal to the interfaces and the crystal axes of d-wave superconductors. We find a 0–π transition at a certain value of the exchange field.

Radiation degradation of alginate and some results of biological effect of degraded alginate on plants

Energy Technology Data Exchange (ETDEWEB)

Hien, N.Q.; Hai, L.; Luan, L.Q.; Hanh, T.T. [Nuclear Research Institute, Dalat (Viet Nam); Nagasawa, Naotsugu; Yoshii, Fumio; Makuuchi, Keizo; Kume, Tamikazu [Japan Atomic Energy Research Inst., Takasaki, Gunma (Japan). Takasaki Radiation Chemistry Research Establishment

2000-03-01

Radiation degradation yields (Gd) of alginate in aqueous solution with different concentration were determined by viscometry method. The relationship between Gd and the alginate concentration was found out as: Gd=33.5 x C{sup -0.68}, with C% (w/v) and dry alginate referred to C=100%. An empirical equation for preparing degraded alginate with the desired low viscometry average molecular weight (Mv) by radiation was proposed. Alginate extracted directly horn seaweed'Sagassum, degraded by radiation was used for field experiments and results of the biological effect on plants (tea, carrot, chrysanthemum) were presented. (author)

Resistive transition of two-dimensional arrays of proximity-effect Josephson junctions

International Nuclear Information System (INIS)

Abraham, D.W.

1983-01-01

Results of measurements on large arrays of PbBi/Cu proximity-effect junctions are presented. Extrapolation of the critical current measured at low temperature to the region at and above T/sub c/ allows us to describe the initial drop in resistance by a simple model of the proximity effect, and also to define an effective temperature T' = E/sub J/(T/sub c/)T/E/sub J/(T) for describing the vortex-unbinding transition. This extrapolation has also allowed comparison of the magnitude of the universal jump in the renormalized coupling strength E/sub J/(T) with prediction, after allowance for renormalization effects. A simple decomposition of the vortex population above T/sub c/ into a sum of thermally-generated and currents-split components allows us to compare data taken at finite voltage sensitivity with theory. This idea is used to understand the broadened universal scaling of this data in a form consistent with the theory of Halperin and Nelson, suitably modified for array samples. Except for temperatures very near the transition temperature, these results can differ significantly from the continuum results of Halperin and Nelson and may be more appropriate for description of junction arrays and some granular films. New experimental data are also presented which show a periodic variation of the resistance of these arrays with the magnetic flux per cell in units of the flux quantum, including a secondary minimum at the half-quantum points. A simple model is presented which accounts for the existence, shape, and magnitude of this periodic variation in terms of vortex core energies. Observations of the current dependence of this periodic variation are presented, and a qualitative model of this effect is discussed

The effect of dephasing on edge state transport through p-n junctions in HgTe/CdTe quantum wells.

Science.gov (United States)

Zhang, Ying-Tao; Song, Juntao; Sun, Qing-Feng

2014-02-26

Using the Landauer-Büttiker formula, we study the effect of dephasing on the transport properties of the HgTe/CdTe p-n junction. It is found that in the HgTe/CdTe p-n junction the topologically protected gapless helical edge states manifest a quantized 2e²/h plateau robust against dephasing, in sharp contrast to the case for the normal HgTe/CdTe quantum well. This robustness of the transport properties of the edge states against dephasing should be attributed to the special construction of the HgTe/CdTe p-n junction, which limits the gapless helical edge states to a very narrow region and thus weakens the influence of the dephasing on the gapless edge states to a large extent. Our results demonstrate that the p-n junction could be a substitute device for use in experimentally observing the robust edge states and quantized plateau. Finally, we present a feasible scheme based on current experimental methods.

Differential Effect of Contrast Polarity Reversals in Closed Squares and open L-Junctions.

Directory of Open Access Journals (Sweden)

Mark M Schira

2011-03-01

Full Text Available Scene segmentation depends on interaction between geometrical and photometric factors. It has been shown that reversals in contrast polarity at points of highest orientation discontinuity along closed contours significantly impair shape discrimination performance, while changes in contrast polarity at straight(er contour segments do not have such deleterious effects (Spehar 2002. Here we employ (semi high resolution fMRI (1.5x1.5x1.5mm to investigate the neuronal substrate underlying these perception effects. Stimuli consisted of simple elements a squares with contrast reversals along straight segments; b squares with contrast reversals in the corner (highest orientation discontinuity; c L-Junctions with contrast reversals along the straight ends; d L-Junctions with contrast reversals in the corner. Element with contrast polarity reversals are easy to distinguish though appear geometrically equivalent. For squares with contrast polarity reversals only along straight lines we find significantly lower BOLD modulation compared to any of the control conditions, which show similar responses to each other. In the light of previous psychophysical work (Spehar 2002, Elder and Zucker, 1993 we speculate that this effect is due to closure perception. We observe this across a wide range of areas on occipital cortex.

Junction Propagation in Organometal Halide Perovskite-Polymer Composite Thin Films.

Science.gov (United States)

Shan, Xin; Li, Junqiang; Chen, Mingming; Geske, Thomas; Bade, Sri Ganesh R; Yu, Zhibin

2017-06-01

With the emergence of organometal halide perovskite semiconductors, it has been discovered that a p-i-n junction can be formed in situ due to the migration of ionic species in the perovskite when a bias is applied. In this work, we investigated the junction formation dynamics in methylammonium lead tribromide (MAPbBr 3 )/polymer composite thin films. It was concluded that the p- and n- doped regions propagated into the intrinsic region with an increasing bias, leading to a reduced intrinsic perovskite layer thickness and the formation of an effective light-emitting junction regardless of perovskite layer thicknesses (300 nm to 30 μm). The junction propagation also played a major role in deteriorating the LED operation lifetime. Stable perovskite LEDs can be achieved by restricting the junction propagation after its formation.

Common features of a vortex structure in long exponentially shaped Josephson junctions and Josephson junctions with inhomogeneities

International Nuclear Information System (INIS)

Boyadjiev, T.L.; Semerdjieva, E.G.; Shukrinov, Yu.M.

2007-01-01

We study the vortex structure in three different models of the long Josephson junction: the exponentially shaped Josephson junction and the Josephson junctions with the resistor and the shunt inhomogeneities in the barrier layer. For these three models the critical curves 'critical current-magnetic field' are numerically constructed. We develop the idea of the equivalence of the exponentially shaped Josephson junction and the rectangular junction with the distributed inhomogeneity and demonstrate that at some parameters of the shunt and the resistor inhomogeneities in the ends of the junction the corresponding critical curves are very close to the exponentially shaped one

arXiv Effective horizons, junction conditions and large-scale magnetism

CERN Document Server

Giovannini, Massimo

2017-08-05

The quantum mechanical generation of hypermagnetic and hyperlectric fields in four-dimensional conformally flat background geometries rests on the simultaneous continuity of the effective horizon and of the extrinsic curvature across the inflationary boundary. The junction conditions for the gauge fields are derived in general terms and corroborated by explicit examples with particular attention to the limit of a sudden (but nonetheless continuous) transition of the effective horizon. After reducing the dynamics to a pair of integral equations related by duality transformations, we compute the power spectra and deduce a novel class of logarithmic corrections which turn out to be, however, numerically insignificant and overwhelmed by the conductivity effects once the gauge modes reenter the effective horizon. In this perspective the magnetogenesis requirements and the role of the postinflationary conductivity are clarified and reappraised. As long as the total duration of the inflationary phase is nearly minim...

Steady-state properties of Josephson junctions with direct conductivity

International Nuclear Information System (INIS)

Zubkov, A.A.; Kupriyanov, M.Y.; Semenov, V.K.

1981-01-01

A new criterion for determining the kinetic inductance of Josephson junctions is introduced. The effects of temperature T, the critical temperatures of the superconducting electrodes T/sub c/1 and T/sub c/2, and the weak-link length on the kinetic inductance of ''dirty'' junctions with direct conductivity are analyzed within the framework of the Usadel equations. Numerical calculations show that both a large characteristic voltage and a nearly harmonic dependence of the current on the phase difference of the superconducting-electrode wave functions cannot be obtained by varying the junction parameters

Squeezed States in Josephson Junctions.

Science.gov (United States)

Hu, X.; Nori, F.

1996-03-01

We have studied quantum fluctuation properties of Josephson junctions in the limit of large Josephson coupling energy and small charging energy, when the eigenstates of the system can be treated as being nearly localized. We have considered(X. Hu and F. Nori, preprints.) a Josephson junction in a variety of situations, e.g., coupled to one or several of the following elements: a capacitor, an inductor (in a superconducting ring), and an applied current source. By solving an effective Shrödinger equation, we have obtained squeezed vacuum (coherent) states as the ground states of a ``free-oscillating'' (linearly-driven) Josephson junction, and calculated the uncertainties of its canonical momentum, charge, and coordinate, phase. We have also shown that the excited states of the various systems we consider are similar to the number states of a simple harmonic oscillator but with different fluctuation properties. Furthermore, we have obtained the time-evolution operators for these systems. These operators can make it easier to calculate the time-dependence of the expectation values and fluctuations of various quantities starting from an arbitrary initial state.

Junction region of EWS-FLI1 fusion protein has a dominant negative effect in Ewing’s Sarcoma in vitro

International Nuclear Information System (INIS)

Jully, Babu; Vijayalakshmi, Ramshankar; Gopal, Gopisetty; Sabitha, Kesavan; Rajkumar, Thangarajan

2012-01-01

Ewing’s sarcoma is a malignancy characterized by a specific 11:22 chromosomal translocation which generates a novel EWS-FLI1 fusion protein functioning as an aberrant transcription factor. In the present study, we have further characterized the junction region of the EWS-FLI1 fusion protein. In-silico model of EWS-FLI1 fusion protein was analysed for ligand binding sites, and a putative region (amino acid (aa) 251–343 of the type 1 fusion protein) in the vicinity of the fusion junction was cloned and expressed using bacterial expression. The recombinant protein was characterized by Circular Dichroism (CD). We then expressed aa 251–280 ectopically in Ewing’s sarcoma cell-line and its effect on cell proliferation, tumorigenicity and expression of EWS-FLI1 target genes were analysed. Our modelling analysis indicated that Junction region (aa 251–343) encompasses potential ligand biding sites in the EWS-FLI1 protein and when expressed in bacteria was present as soluble form. Ectopically expressing this region in Ewing’s sarcoma cells inhibited tumorigenicity, and EWS-FLI1 target genes indicating a dominant negative biological effect. Junction region can be exploited further as target for drug development in future to specifically target EWS-FLI1 in Ewing’s Sarcoma

THE EFFECT OF VOLTAGE ON ELECTROCHEMICAL DEGRADATION OF TRICHLOROETHYLENE

Science.gov (United States)

This study investigates electrochemical degradation of Trichloroethylene (TCE) using granular graphite as electrodes in a flow-through reactor system. The experiments were conducted to obtain information on the effect of voltage and flow rates on the degradation rates of TCE. The...

Behavior of tight-junction, adherens-junction and cell polarity proteins during HNF-4α-induced epithelial polarization

International Nuclear Information System (INIS)

Satohisa, Seiro; Chiba, Hideki; Osanai, Makoto; Ohno, Shigeo; Kojima, Takashi; Saito, Tsuyoshi; Sawada, Norimasa

2005-01-01

We previously reported that expression of tight-junction molecules occludin, claudin-6 and claudin-7, as well as establishment of epithelial polarity, was triggered in mouse F9 cells expressing hepatocyte nuclear factor (HNF)-4α [H. Chiba, T. Gotoh, T. Kojima, S. Satohisa, K. Kikuchi, M. Osanai, N. Sawada. Hepatocyte nuclear factor (HNF)-4α triggers formation of functional tight junctions and establishment of polarized epithelial morphology in F9 embryonal carcinoma cells, Exp. Cell Res. 286 (2003) 288-297]. Using these cells, we examined in the present study behavior of tight-junction, adherens-junction and cell polarity proteins and elucidated the molecular mechanism behind HNF-4α-initiated junction formation and epithelial polarization. We herein show that not only ZO-1 and ZO-2, but also ZO-3, junctional adhesion molecule (JAM)-B, JAM-C and cell polarity proteins PAR-3, PAR-6 and atypical protein kinase C (aPKC) accumulate at primordial adherens junctions in undifferentiated F9 cells. In contrast, CRB3, Pals1 and PATJ appeared to exhibit distinct subcellular localization in immature cells. Induced expression of HNF-4α led to translocation of these tight-junction and cell polarity proteins to beltlike tight junctions, where occludin, claudin-6 and claudin-7 were assembled, in differentiated cells. Interestingly, PAR-6, aPKC, CRB3 and Pals1, but not PAR-3 or PATJ, were also concentrated on the apical membranes in differentiated cells. These findings indicate that HNF-4α provokes not only expression of tight-junction adhesion molecules, but also modulation of subcellular distribution of junction and cell polarity proteins, resulting in junction formation and epithelial polarization

Flexible 2D layered material junctions

Science.gov (United States)

Balabai, R.; Solomenko, A.

2018-03-01

Within the framework of the methods of the electron density functional and the ab initio pseudopotential, we have obtained the valence electron density spatial distribution, the densities of electron states, the widths of band gaps, the charges on combined regions, and the Coulomb potentials for graphene-based flexible 2D layered junctions, using author program complex. It is determined that the bending of the 2D layered junctions on the angle α leads to changes in the electronic properties of these junctions. In the graphene/graphane junction, there is clear charge redistribution with different signs in the regions of junctions. The presence in the heterojunctions of charge regions with different signs leads to the formation of potential barriers. The greatest potential jump is in the graphene/fluorographene junction. The greatest value of the band gap width is in the graphene/graphane junction.

Modeling Bloch oscillations in ultra-small Josephson junctions

Science.gov (United States)

Vora, Heli; Kautz, Richard; Nam, Sae Woo; Aumentado, Jose

In a seminal paper, Likharev et al. developed a theory for ultra-small Josephson junctions with Josephson coupling energy (Ej) less than the charging energy (Ec) and showed that such junctions demonstrate Bloch oscillations which could be used to make a fundamental current standard that is a dual of the Josephson volt standard. Here, based on the model of Geigenmüller and Schön, we numerically calculate the current-voltage relationship of such an ultra-small junction which includes various error processes present in a nanoscale Josephson junction such as random quasiparticle tunneling events and Zener tunneling between bands. This model allows us to explore the parameter space to see the effect of each process on the width and height of the Bloch step and serves as a guide to determine whether it is possible to build a quantum current standard of a metrological precision using Bloch oscillations.

Majorana splitting from critical currents in Josephson junctions

Science.gov (United States)

Cayao, Jorge; San-Jose, Pablo; Black-Schaffer, Annica M.; Aguado, Ramón; Prada, Elsa

2017-11-01

A semiconducting nanowire with strong Rashba spin-orbit coupling and coupled to a superconductor can be tuned by an external Zeeman field into a topological phase with Majorana zero modes. Here we theoretically investigate how this exotic topological superconductor phase manifests in Josephson junctions based on such proximitized nanowires. In particular, we focus on critical currents in the short junction limit (LN≪ξ , where LN is the junction length and ξ is the superconducting coherence length) and show that they contain important information about nontrivial topology and Majoranas. This includes signatures of the gap inversion at the topological transition and a unique oscillatory pattern that originates from Majorana interference. Interestingly, this pattern can be modified by tuning the transmission across the junction, thus providing complementary evidence of Majoranas and their energy splittings beyond standard tunnel spectroscopy experiments, while offering further tunability by virtue of the Josephson effect.

Observation of weak coupling effects in Ba0.6 K0.4 Fe2 As2 junctions patterned across a naturally formed grain boundary

International Nuclear Information System (INIS)

Hong, Sung-Hak; Lee, Soon-Gul; Lee, Nam Hoon; Kang, Won Nam

2014-01-01

We have fabricated intergrain nanobridge junctions from a Ba 0.6 K 0.4 Fe 2 As 2 film and observed their weak coupling effects. We prepared the junction by patterning a nanobridge across a natural grain boundary by using a focused ion beam etching technique and studied their superconducting transition properties. The resistive transition showed three steps: the transitions of the bulk, the microbridge, and the junction grain boundary. Current–voltage curves showed typical Josephson junction characteristics, well-matched with the model of a resistively shunted junction incorporated with thermal fluctuations. Fitting data to theory revealed much larger current fluctuations than expected from the Johnson–Nyquist theorem. The junction showed a linear temperature dependence of the critical current and a constant normal-state resistance, indicating that the grain boundary played a role as a tunnel barrier with a very poor conductance. (paper)

Charge transport in junctions between d-wave superconductors

International Nuclear Information System (INIS)

Barash, Y.S.; Galaktionov, A.V.; Zaikin, A.D.

1995-01-01

We develop a microscopic analysis of superconducting and dissipative currents in junctions between superconductors with d-wave symmetry of the order parameter. We study the proximity effect in such superconductors and show that for certain crystal orientations the superconducting order parameter can be essentially suppressed in the vicinity of a nontransparent specularly reflecting boundary. This effect strongly influences the value and the angular dependence of the dc Josephson current j S . At T∼T c it leads to a crossover between j S ∝T c -T and j S ∝(T c -T) 2 respectively for homogeneous and nonhomogeneous distribution of the order parameter in the vicinity of a tunnel junction. We show that at low temperatures the current-phase relation j S (cphi) for superconductor--normal-metal--superconductor junctions and short weak links between d-wave superconductors is essentially nonharmonic and contains a discontinuity at cphi=0. This leads to further interesting features of such systems which can be used for pairing symmetry tests in high-temperature superconductors (HTSC). We also investigated the low-temperature I-V curves of normal-metal--superconductor and superconductor-superconductor tunnel junctions and demonstrated that depending on the junction type and crystal orientation these curves show zero-bias anomalies I∝V 2 , I∝V 2 ln(1/V), and I∝V 3 caused by the gapless behavior of the order parameter in d-wave superconductors. Many of our results agree well with recent experimental findings for HTSC compounds

Probing electrical transport in individual carbon nanotubes and junctions

International Nuclear Information System (INIS)

Kim, Tae-Hwan; Wendelken, John F; Li Anping; Du Gaohui; Li Wenzhi

2008-01-01

The electrical transport properties of individual carbon nanotubes (CNTs) and multi-terminal junctions of CNTs are investigated with a quadraprobe scanning tunneling microscope. The CNTs used in this study are made of stacked herringbone-type conical graphite sheets with a cone angle of ∼20 deg. to the tube axis, and the CNT junctions have no catalytic particles in the junction areas. The CNTs have a significantly higher resistivity than conventional CNTs with concentric walls. The straight CNTs display linear current-voltage (I-V) characteristics, indicating diffusive transport rather than ballistic transport. The structural deformation in CNTs with bends substantially increases the resistivity in comparison with that for the straight segments on the same CNTs, and the I-V curve departs slightly from linearity in curved segments. The junction area of the CNT junctions behaves like an ohmic-type scattering center with linear I-V characteristics. In addition, a gating effect has not been observed, in contrast to the case for conventional multi-walled CNT junctions. These unusual transport properties can be attributed to the enhanced inter-layer interaction in the herringbone-type CNTs.

IR Camera Validation of IGBT Junction Temperature Measurement via Peak Gate Current

DEFF Research Database (Denmark)

Baker, Nick; Dupont, Laurent; Munk-Nielsen, Stig

2017-01-01

partial bond-wire lift-off. Results are also compared with a traditional electrical temperature measurement method: the voltage drop under low current (VCE(low)). In all cases, the IGPeak method is found to provide a temperature slightly overestimating the temperature of the gate pad. Consequently, both...... the gate pad position and chip temperature distribution influence whether the measurement is representative of the mean junction temperature. These results remain consistent after chips are degraded through bondwire lift-off. In a paralleled IGBT configuration with non-negligible temperature disequilibrium...

The Dissolution of Double Holliday Junctions

DEFF Research Database (Denmark)

Bizard, Anna H; Hickson, Ian D

2014-01-01

as "double Holliday junction dissolution." This reaction requires the cooperative action of a so-called "dissolvasome" comprising a Holliday junction branch migration enzyme (Sgs1/BLM RecQ helicase) and a type IA topoisomerase (Top3/TopoIIIα) in complex with its OB (oligonucleotide/oligosaccharide binding......Double Holliday junctions (dHJS) are important intermediates of homologous recombination. The separate junctions can each be cleaved by DNA structure-selective endonucleases known as Holliday junction resolvases. Alternatively, double Holliday junctions can be processed by a reaction known......) fold containing accessory factor (Rmi1). This review details our current knowledge of the dissolution process and the players involved in catalyzing this mechanistically complex means of completing homologous recombination reactions....

Defining the value of injection current and effective electrical contact area for EGaIn-based molecular tunneling junctions.

Science.gov (United States)

Simeone, Felice C; Yoon, Hyo Jae; Thuo, Martin M; Barber, Jabulani R; Smith, Barbara; Whitesides, George M

2013-12-04

Analysis of rates of tunneling across self-assembled monolayers (SAMs) of n-alkanethiolates SCn (with n = number of carbon atoms) incorporated in junctions having structure Ag(TS)-SAM//Ga2O3/EGaIn leads to a value for the injection tunnel current density J0 (i.e., the current flowing through an ideal junction with n = 0) of 10(3.6±0.3) A·cm(-2) (V = +0.5 V). This estimation of J0 does not involve an extrapolation in length, because it was possible to measure current densities across SAMs over the range of lengths n = 1-18. This value of J0 is estimated under the assumption that values of the geometrical contact area equal the values of the effective electrical contact area. Detailed experimental analysis, however, indicates that the roughness of the Ga2O3 layer, and that of the Ag(TS)-SAM, determine values of the effective electrical contact area that are ~10(-4) the corresponding values of the geometrical contact area. Conversion of the values of geometrical contact area into the corresponding values of effective electrical contact area results in J0(+0.5 V) = 10(7.6±0.8) A·cm(-2), which is compatible with values reported for junctions using top-electrodes of evaporated Au, and graphene, and also comparable with values of J0 estimated from tunneling through single molecules. For these EGaIn-based junctions, the value of the tunneling decay factor β (β = 0.75 ± 0.02 Å(-1); β = 0.92 ± 0.02 nC(-1)) falls within the consensus range across different types of junctions (β = 0.73-0.89 Å(-1); β = 0.9-1.1 nC(-1)). A comparison of the characteristics of conical Ga2O3/EGaIn tips with the characteristics of other top-electrodes suggests that the EGaIn-based electrodes provide a particularly attractive technology for physical-organic studies of charge transport across SAMs.

Effects of the phase periodicity on the quantum dynamics of a resistively shunted Josephson junction

International Nuclear Information System (INIS)

Zwerger, W.; Dorsey, A.T.; Fisher, M.P.A.

1986-01-01

A phenomenological model is introduced for the dissipative quantum dynamics of the phase phi across a current-biased Josephson junction. The model is invariant under phi→phi+2π. This enables us to restrict phi to the interval 0 to 2π, equating phi+2π with phi, and study the role played by the resulting nontrivial topology. Using Feynman's influence functional theory it is shown that the dissipation suppresses interference between paths with different winding numbers. For Ohmic dissipation this interference is completely destroyed, and phi can effectively be treated as an extended coordinate. This justifies the use of the usual washboard potential description of a current-biased junction even in the quantum case, provided an Ohmic dissipation mechanism is present

Wide-range and fast thermally-tunable silicon photonic microring resonators using the junction field effect.

Science.gov (United States)

Wang, Xiaoxi; Lentine, Anthony; DeRose, Christopher; Starbuck, Andrew L; Trotter, Douglas; Pomerene, Andrew; Mookherjea, Shayan

2016-10-03

Tunable silicon microring resonators with small, integrated micro-heaters which exhibit a junction field effect were made using a conventional silicon-on-insulator (SOI) photonic foundry fabrication process. The design of the resistive tuning section in the microrings included a "pinched" p-n junction, which limited the current at higher voltages and inhibited damage even when driven by a pre-emphasized voltage waveform. Dual-ring filters were studied for both large (>4.9 THz) and small (850 GHz) free-spectral ranges. Thermal red-shifting was demonstrated with microsecond-scale time constants, e.g., a dual-ring filter was tuned over 25 nm in 0.6 μs 10%-90% transition time, and with efficiency of 3.2 μW/GHz.

Large lateral photovoltaic effect with ultrafast relaxation time in SnSe/Si junction

Energy Technology Data Exchange (ETDEWEB)

Wang, Xianjie; Zhao, Xiaofeng; Hu, Chang; Zhang, Yang; Song, Bingqian; Zhang, Lingli; Liu, Weilong; Lv, Zhe; Zhang, Yu; Sui, Yu, E-mail: suiyu@hit.edu.cn [Department of Physics, Harbin Institute of Technology, Harbin 150001 (China); Tang, Jinke [Department of Physics and Astronomy, University of Wyoming, Laramie, Wyoming 82071 (United States); Song, Bo, E-mail: songbo@hit.edu.cn [Department of Physics, Harbin Institute of Technology, Harbin 150001 (China); Academy of Fundamental and Interdisciplinary Sciences, Harbin Institute of Technology, Harbin 150001 (China)

2016-07-11

In this paper, we report a large lateral photovoltaic effect (LPE) with ultrafast relaxation time in SnSe/p-Si junctions. The LPE shows a linear dependence on the position of the laser spot, and the position sensitivity is as high as 250 mV mm{sup −1}. The optical response time and the relaxation time of the LPE are about 100 ns and 2 μs, respectively. The current-voltage curve on the surface of the SnSe film indicates the formation of an inversion layer at the SnSe/p-Si interface. Our results clearly suggest that most of the excited-electrons diffuse laterally in the inversion layer at the SnSe/p-Si interface, which results in a large LPE with ultrafast relaxation time. The high positional sensitivity and ultrafast relaxation time of the LPE make the SnSe/p-Si junction a promising candidate for a wide range of optoelectronic applications.

Attitudinal effects of degrading themes and sexual explicitness in video materials.

Science.gov (United States)

Golde, J A; Strassberg, D S; Turner, C M; Lowe, K

2000-07-01

This study examined the independent and interactive effects of sexual explicitness and degrading themes toward women on mens' attitudes following exposure to video presentations of male-female interactions. Subjects were 83 male college students who viewed video vignettes under one of four stimulus conditions: (a) sexually explicit/degrading, (b) sexually explicit/nondegrading, (c) nonexplicit/degrading, and (d) nonexplicit/nondegrading. Results revealed that men exposed to degrading material, regardless of explicitness, were significantly more likely to express attitudes supportive of rape, while explicitness had no significant main or interactive effect on these attitudes. Further, the interaction of explicitness with degradation was found to impact scores on a measure of sexual callousness. Theoretical and clinical implications of these findings are discussed.

Experimental and numerical analyses on the effect of increasing inflow temperatures on the flow mixing behavior in a T-junction

International Nuclear Information System (INIS)

Selvam, P. Karthick; Kulenovic, Rudi; Laurien, Eckart

2016-01-01

Highlights: • Experimental and numerical analyses of three T-junction mixing cases. • Temperature difference (ΔT) between fluids are 51.5 K, 76 K and 97 K. • Thermally stratified flow behavior is observed in all cases in the mixing zone. • Temperature fluctuations have maximum amplitudes of about 6.3–9.9% of ΔT. • High amplitude fluctuations occur near stratification layer in the mixing region. • Power spectral density (PSD) of fluctuations contains energy in 0.1–2 Hz range. - Abstract: Thermal degradation of piping induced by high cycle thermal fatigue (HCTF) is of significant importance as operating Nuclear Power Plants (NPP) become older and lifetime extension activities are initiated. In particular, HCTF incidents related to turbulent thermal mixing of fluids in a T-junction piping system are not well understood and could not be adequately monitored using common thermocouple instrumentation. To investigate this phenomenon, an experimental T-junction test facility was commissioned at the University of Stuttgart, known as the Fluid Structure Interaction (FSI) test facility. The paper presents the experimental investigation and the corresponding numerical validation using the large eddy simulation (LES) method to study T-junction flow mixing. Three experimental test cases are investigated with temperature differences (∆T) of 51.5 K (Case 1), 76 K (Case 2) and 97 K (Case 3) between the mixing fluids. A constant mass flow rate ratio (main/branch) of 4:1 is maintained in all the investigated cases. Flow mixing is observed to be incomplete in all the cases, resulting in a thermally stratified flow with an oscillating stratification layer downstream of the T-junction. Mean temperature and root mean square (RMS) temperature fluctuations predicted by LES in the mixing region are found to be in good agreement with measurement data, with the exception of few positions. Amplitudes of temperature fluctuations are observed to be higher near the

Stretching of BDT-gold molecular junctions: Thiol or thiolate termination?

KAUST Repository

Souza, Amaury De Melo; Rungger, Ivan; Pontes, Renato Borges; Rocha, Alexandre Reily; Da Silva, Antô nio José Roque; Schwingenschlö gl, Udo; Sanvito, S.

2014-01-01

It is often assumed that the hydrogen atoms in the thiol groups of a benzene-1,4-dithiol dissociate when Au-benzene-1,4-dithiol-Au junctions are formed. We demonstrate, by stability and transport property calculations, that this assumption cannot be made. We show that the dissociative adsorption of methanethiol and benzene-1,4-dithiol molecules on a flat Au(111) surface is energetically unfavorable and that the activation barrier for this reaction is as high as 1 eV. For the molecule in the junction, our results show, for all electrode geometries studied, that the thiol junctions are energetically more stable than their thiolate counterparts. Due to the fact that density functional theory (DFT) within the local density approximation (LDA) underestimates the energy difference between the lowest unoccupied molecular orbital and the highest occupied molecular orbital by several electron-volts, and that it does not capture the renormalization of the energy levels due to the image charge effect, the conductance of the Au-benzene-1,4-dithiol-Au junctions is overestimated. After taking into account corrections due to image charge effects by means of constrained-DFT calculations and electrostatic classical models, we apply a scissor operator to correct the DFT energy level positions, and calculate the transport properties of the thiol and thiolate molecular junctions as a function of the electrode separation. For the thiol junctions, we show that the conductance decreases as the electrode separation increases, whereas the opposite trend is found for the thiolate junctions. Both behaviors have been observed in experiments, therefore pointing to the possible coexistence of both thiol and thiolate junctions. Moreover, the corrected conductance values, for both thiol and thiolate, are up to two orders of magnitude smaller than those calculated with DFT-LDA. This brings the theoretical results in quantitatively good agreement with experimental data.

Magneto-Seebeck effect in magnetic tunnel junctions with perpendicular anisotropy

Directory of Open Access Journals (Sweden)

Keyu Ning

2017-01-01

Full Text Available As one invigorated filed of spin caloritronics combining with spin, charge and heat current, the magneto-Seebeck effect has been experimentally and theoretically studied in spin tunneling thin films and nanostructures. Here we analyze the tunnel magneto-Seebeck effect in magnetic tunnel junctions with perpendicular anisotropy (p-MTJs under various measurement temperatures. The large tunnel magneto-Seebeck (TMS ratio up to −838.8% for p-MTJs at 200 K is achieved, with Seebeck coefficient S in parallel and antiparallel states of 6.7 mV/K and 62.9 mV/K, respectively. The temperature dependence of the tunnel magneto-Seebeck can be attributed to the contributing transmission function and electron states at the interface between CoFeB electrode and MgO barrier.

Junction temperature estimation for an advanced active power cycling test

DEFF Research Database (Denmark)

Choi, Uimin; Blaabjerg, Frede; Jørgensen, S.

2015-01-01

estimation method using on-state VCE for an advanced active power cycling test is proposed. The concept of the advanced power cycling test is explained first. Afterwards the junction temperature estimation method using on-state VCE and current is presented. Further, the method to improve the accuracy...... of the maximum junction temperature estimation is also proposed. Finally, the validity and effectiveness of the proposed method is confirmed by experimental results.......On-state collector-emitter voltage (VCE) is a good indicator to determine the wear-out condition of power device modules. Further, it is a one of the Temperature Sensitive Electrical Parameters (TSEPs) and thus can be used for junction temperature estimation. In this paper, the junction temperature...

Assessment of effect of reinforcement on plastic limit load of branch junction

International Nuclear Information System (INIS)

Myung, Man Sik; Kim, Yun Jae; Yoon, Ki Bong

2009-01-01

The present work provides effects of reinforcement shape and area on plastic limit loads of branch junctions, based on detailed three-dimensional finite element limit analysis and small strain FE limit analyses assuming elastic-perfectly plastic material behavior. Three types of loading are considered; internal pressure, in-plane bending on the branch pipe and in-plane bending on the run pipe. It is found that reinforcement is the most effective in the case when (in-plane/out-of-plane) bending is applied to the branch pipe. When bending is applied to the run pipe, reinforcement is less effective, compared to the case when bending is applied to the branch pipe. The reinforcement effect is the least effective for internal pressure.

Resistance switch employing a simple metal nanogap junction

International Nuclear Information System (INIS)

Naitoh, Yasuhisa; Horikawa, Masayo; Abe, Hidekazu; Shimizu, Tetsuo

2006-01-01

In recent years, several researchers have reported the occurrence of reversible resistance switching effects in simple metal nanogap junctions. A large negative resistance is observed in the I-V characteristics of such a junction when high-bias voltages are applied. This phenomenon is characteristic behaviour on the nanometre scale; it only occurs for gap widths slightly under 13 nm. Furthermore, such a junction exhibits a non-volatile resistance hysteresis when the bias voltage is reduced very rapidly from a high level to around 0 V, and when the bias voltage is reduced slowly. This non-volatile resistance change occurs as a result of changes in the gap width between the metal electrodes, brought about by the applied bias voltage

Effect of pH and inoculum size on pentachlorophenol degradation ...

African Journals Online (AJOL)

The success of this depends on finding strains able to degrade PCP in a changeable environment. The aim of this work was to study the influence of pH of the medium and the effect of inoculum size on pentachlorophenol degradation by Pseudomonas sp. A study of PCP degradation kinetics was performed to assess such ...

Thermal stability study of the insulator layer in NiFe/CoFe/Al2O3/Co spin-dependent tunnel junction

International Nuclear Information System (INIS)

Liao, C.C.; Ho, C.H.; Huang, R.-T.; Chen, F.-R.; Kai, J.J.; Chen, L.-C.; Lin, M.-T.; Yao, Y.D.

2002-01-01

Spin-dependent tunnel junction, NiFe/CoFe/Al 2 O 3 /Co//Si, was fabricated to investigate the thermal stability induced diffusion behaviors. The interfacial diffusion causes the degradation of the ratio of the TMR, the enhancement of the switching field of the two magnetic electrodes, the thickness decrease of the insulator layer, and the increase of the interfacial roughness. The outward diffusion of oxygen from the insulator layer is faster than that of aluminum for samples annealed below 400 deg. C. The degradation of the ratio of TMR is attributed to the disturbance of the spin polarization in the magnetic layers, and the increase of the pinholes and spin-flip effect in the insulator layer. The relative roughness between the two interfaces of the insulator induces the surface magnetic dipoles, and hence, increases the switching field of the ferromagnetic electrodes

Droplet formation in Hele-Shaw T-junction.

Science.gov (United States)

Ricouvier, Joshua; Yazhgur, Pavel; Leshansky, Alexander; Tabeling, Patrick; Microflusa Team

The development of digital microfluidics has attracted considerable interest towards generation of highly monodisperse microdroplets. T-junction has become an essential element of most of microfluidic chips. Despite its importance, theoretical analysis of droplet formation at T-junction is still incomplete due to complexity of physics involved. We focused on droplet generation at the Hele-Shaw T-junction. The effect of various experimental parameters, such as channel geometry, flow rates, surface tension and fluid viscosities, was thoroughly investigated. Our results show that the experimental system exhibits three distinct regimes (squeezing, dripping and jetting regimes) and point out the effect of confinement on the transitions. We demonstrate that the size of the ''plug'' droplet depends not only on the flow rate ratio (as described in the literature), but also on the capillary number and the channel cross-section aspect ratio. Quasi-2D flow equations allow us to perform numerical simulations and to compare them with experimental results. The Microflusa project receives funding from the European Union's Horizon 2020 research and innovation programme under Grant Agreement No. 664823.

Monolithic junction field-effect transistor charge preamplifier for calorimetry at high luminosity hadron colliders

International Nuclear Information System (INIS)

Radeka, V.; Rescia, S.; Rehn, L.A.; Manfredi, P.F.; Speziali, V.

1991-11-01

The outstanding noise and radiation hardness characteristics of epitaxial-channel junction field-effect transistors (JFET) suggest that a monolithic preamplifier based upon them may be able to meet the strict specifications for calorimetry at high luminosity colliders. Results obtained so far with a buried layer planar technology, among them an entire monolithic charge-sensitive preamplifier, are described

Droplet Traffic Control at a simple T junction

Science.gov (United States)

Panizza, Pascal; Engl, Wilfried; Colin, Annie; Ajdari, Armand

2006-03-01

A basic yet essential element of every traffic flow control is the effect of a junction where the flow is separated into several streams. How do pedestrians, vehicles or blood cells divide when they reach a junction? How does the outcome depend on their density? Similar fundamental questions hold for much simpler systems: in this paper, we have studied the behaviour of periodic trains of water droplets flowing in oil through a channel as they reach a simple, locally symmetric, T junction. Depending on their dilution, we observe that the droplets are either alternately partitioned between both outlets or sorted exclusively into the shortest one. We show that this surprising behaviour results from the hydrodynamic feed-back of drops in the two outlets on the selection process occurring at the junction. Our results offer a first guide for the design and modelling of droplet traffic in complex branched networks, a necessary step towards parallelized droplet-based ``lab-on-chip'' devices.

Effect of Mefloquine, a Gap Junction Blocker, on Circadian Period2 Gene Oscillation in the Mouse Suprachiasmatic Nucleus

Directory of Open Access Journals (Sweden)

Jinmi Koo

2015-09-01

Full Text Available BackgroundIn mammals, the master circadian pacemaker is localized in an area of the ventral hypothalamus known as the suprachiasmatic nucleus (SCN. Previous studies have shown that pacemaker neurons in the SCN are highly coupled to one another, and this coupling is crucial for intrinsic self-sustainability of the SCN central clock, which is distinguished from peripheral oscillators. One plausible mechanism underlying the intercellular communication may involve direct electrical connections mediated by gap junctions.MethodsWe examined the effect of mefloquine, a neuronal gap junction blocker, on circadian Period 2 (Per2 gene oscillation in SCN slice cultures prepared from Per2::luciferase (PER2::LUC knock-in mice using a real-time bioluminescence measurement system.ResultsAdministration of mefloquine causes instability in the pulse period and a slight reduction of amplitude in cyclic PER2::LUC expression. Blockade of gap junctions uncouples PER2::LUC-expressing cells, in terms of phase transition, which weakens synchrony among individual cellular rhythms.ConclusionThese findings suggest that neuronal gap junctions play an important role in synchronizing the central pacemaker neurons and contribute to the distinct self-sustainability of the SCN master clock.

Molecular electronic junction transport

DEFF Research Database (Denmark)

Solomon, Gemma C.; Herrmann, Carmen; Ratner, Mark

2012-01-01

Whenasinglemolecule,oracollectionofmolecules,isplacedbetween two electrodes and voltage is applied, one has a molecular transport junction. We discuss such junctions, their properties, their description, and some of their applications. The discussion is qualitative rather than quantitative, and f...

Gap junctions and motor behavior

DEFF Research Database (Denmark)

Kiehn, Ole; Tresch, Matthew C.

2002-01-01

The production of any motor behavior requires coordinated activity in motor neurons and premotor networks. In vertebrates, this coordination is often assumed to take place through chemical synapses. Here we review recent data suggesting that electrical gap-junction coupling plays an important role...... in coordinating and generating motor outputs in embryonic and early postnatal life. Considering the recent demonstration of a prevalent expression of gap-junction proteins and gap-junction structures in the adult mammalian spinal cord, we suggest that neuronal gap-junction coupling might also contribute...... to the production of motor behavior in adult mammals....

Ferromagnetic Josephson Junctions for Cryogenic Memory

Science.gov (United States)

Niedzielski, Bethany M.; Gingrich, Eric C.; Khasawneh, Mazin A.; Loloee, Reza; Pratt, William P., Jr.; Birge, Norman O.

2015-03-01

Josephson junctions containing ferromagnetic materials are of interest for both scientific and technological purposes. In principle, either the amplitude of the critical current or superconducting phase shift across the junction can be controlled by the relative magnetization directions of the ferromagnetic layers in the junction. Our approach concentrates on phase control utilizing two junctions in a SQUID geometry. We will report on efforts to control the phase of junctions carrying either spin-singlet or spin-triplet supercurrent for cryogenic memory applications. Supported by Northorp Grumman Corporation and by IARPA under SPAWAR Contract N66001-12-C-2017.

Fundamental characterization of the effect of nitride sidewall spacer process on boron dose loss in ultra-shallow junction formation

Energy Technology Data Exchange (ETDEWEB)

Kohli, P. [Silicon Technology Development, Texas Instruments, Dallas, TX 75243 (United States) and Microelectronics Research Center, University of Texas, Austin, TX 78758 (United States)]. E-mail: puneet.kohli@sematech.org; Chakravarthi, S. [Silicon Technology Development, Texas Instruments, Dallas, TX 75243 (United States); Jain, Amitabh [Silicon Technology Development, Texas Instruments, Dallas, TX 75243 (United States); Bu, H. [Silicon Technology Development, Texas Instruments, Dallas, TX 75243 (United States); Mehrotra, M. [Silicon Technology Development, Texas Instruments, Dallas, TX 75243 (United States); Dunham, S.T. [Department of Electrical Engineering, University of Washington, Seattle, WA 98195 (United States); Banerjee, S.K. [Microelectronics Research Center, University of Texas, Austin, TX 78758 (United States)

2004-12-15

A nitride spacer with an underlying deposited tetraethoxysilane (TEOS) oxide that behaves as a convenient etch stop layer is a popular choice for sidewall spacer in modern complementary metal oxide semiconductor (CMOS) process flows. In this work, we have investigated the effect of the silicon nitride spacer process chemistry on the boron profile in silicon and the related dose loss of B from Si into silicon dioxide. This is reflected as a dramatic change in the junction depth, junction abruptness and junction peak concentration for the different nitride chemistries. We conclude that the silicon nitride influences the concentration of hydrogen in the silicon dioxide and different nitride chemistries result in different concentrations of hydrogen in the silicon dioxide during the final source/drain anneal. The presence of H enhances the diffusivity of B in the silicon dioxide and thereby results in a significant dose loss from the Si into the silicon dioxide. In this work, we show that this dose loss can be minimized and the junction profile engineered by choosing a desirable nitride chemistry.

AlGaAs/InGaAlP tunnel junctions for multijunction solar cells

Energy Technology Data Exchange (ETDEWEB)

SHARPS,P.R.; LI,N.Y.; HILLS,J.S.; HOU,H.; CHANG,PING-CHIH; BACA,ALBERT G.

2000-05-16

Optimization of GaInP{sub 2}/GaAs dual and GaInP{sub 2}/GaAs/Ge triple junction cells, and development of future generation monolithic multi-junction cells will involve the development of suitable high bandgap tunnel junctions. There are three criteria that a tunnel junction must meet. First, the resistance of the junction must be kept low enough so that the series resistance of the overall device is not increased. For AMO, 1 sun operation, the tunnel junction resistance should be below 5 x 10{sup {minus}2} {Omega}-cm. Secondly, the peak current density for the tunnel junction must also be larger than the J{sub sc} of the cell so that the tunnel junction I-V curve does not have a deleterious effect on the I-V curve of the multi-junction device. Finally, the tunnel junction must be optically transparent, i.e., there must be a minimum of optical absorption of photons that will be collected by the underlying subcells. The paper reports the investigation of four high bandgap tunnel junctions grown by metal-organic chemical vapor deposition.

Degrading radiation effects on properties of bromobutyl rubber compounds

Energy Technology Data Exchange (ETDEWEB)

Scagliusi, Sandra R.; Cardoso, Elisabeth C.L.; Pozenato, Cristina A.; Lugao, Ademar B., E-mail: srscagliusi@ipen.br [Instituto de Pesquisas Energeticas e Nucleares (IPEN/CNEN-SP), Sao Paulo, SP (Brazil)

2013-07-01

The understanding of chemistry involved in degradation induced radiation is becoming more and more relevant in the re-use of polymeric materials, as well in beneficial radiation uses. Degrading radiation effects have been considered from viewpoint of controlled degradation for isoprene/isobutene in rubbers for recycling purposes. Bromobutyl rubber (BIIR) is an isobutylene/isoprene copolymer comprising 1.9 to 2.1% bromine and has a lot of applications including in tires air-chambers. In this work there were evaluated gamma-irradiation effects for re-use or recycling objectives in elastomeric bromobutyl compositions irradiated at 5, 15, 25, 50, 100,150 and 200 kGy. Mechanical properties, hardness and swelling were assessed in non-vulcanized and vulcanized rubber, non-irradiated and irradiated at different doses. The major gamma radiation effect in butyl rubber is the generation of free radicals along changes in mechanical properties. Irradiation effects in bromobutyl rubber compounds were comprehensively investigated, demonstrated and discussed. (author)

Degrading radiation effects on properties of bromobutyl rubber compounds

International Nuclear Information System (INIS)

Scagliusi, Sandra R.; Cardoso, Elisabeth C.L.; Pozenato, Cristina A.; Lugao, Ademar B.

2013-01-01

The understanding of chemistry involved in degradation induced radiation is becoming more and more relevant in the re-use of polymeric materials, as well in beneficial radiation uses. Degrading radiation effects have been considered from viewpoint of controlled degradation for isoprene/isobutene in rubbers for recycling purposes. Bromobutyl rubber (BIIR) is an isobutylene/isoprene copolymer comprising 1.9 to 2.1% bromine and has a lot of applications including in tires air-chambers. In this work there were evaluated gamma-irradiation effects for re-use or recycling objectives in elastomeric bromobutyl compositions irradiated at 5, 15, 25, 50, 100,150 and 200 kGy. Mechanical properties, hardness and swelling were assessed in non-vulcanized and vulcanized rubber, non-irradiated and irradiated at different doses. The major gamma radiation effect in butyl rubber is the generation of free radicals along changes in mechanical properties. Irradiation effects in bromobutyl rubber compounds were comprehensively investigated, demonstrated and discussed. (author)

The cranial-spinal junction in medulloblastoma: does it matter?

International Nuclear Information System (INIS)

Narayana, Ashwatha; Jeswani, Sam; Paulino, Arnold C.

1999-01-01

Purpose: Late effects of treatment in children and young adults with medulloblastoma can be influenced by the technique employed in radiating the craniospinal axis. The purpose of this study is to determine whether the placement of the cranial-spinal junction has an impact on dose to the cervical spinal cord and surrounding organs. Methods and Materials: Five patients underwent computed tomography (CT) simulation in the prone position for craniospinal irradiation. A dose of 36 Gy was prescribed to the entire neuraxis. The doses to the cervical spinal cord and surrounding organs were calculated using a cranial-spinal junction at the C1-C2 vertebral interspace (high junction) or at the lowest point in the neck, with exclusion of the shoulders in the lateral cranial fields (low junction).The volume of critical organs at risk, as well as dose to these structures using the cranial and spinal field(s) were outlined and calculated using the CMS FOCUS 3-dimensional treatment planning system. Results: The average dose to the cervical spinal cord was 11.9% higher than the prescribed dose with the low junction, and 6.7% higher with the high junction. However, doses to the thyroid gland, mandible, pharynx, and larynx were increased by an average of 29.6%, 75.8%, 70.6%, and 227.7%, respectively, by the use of the high junction compared to the low junction. Conclusion: A higher dose to the cervical spinal cord can be minimized by using a high junction. However, this would be at the cost of substantially increased doses to surrounding organs such as the thyroid gland, mandible, pharynx, and larynx. This can be critical in children and young adults, where hypothyroidism, mandibular hypoplasia, and development of second malignancies may be a late sequela of radiation therapy

Electronic noise of superconducting tunnel junction detectors

International Nuclear Information System (INIS)

Jochum, J.; Kraus, H.; Gutsche, M.; Kemmather, B.; Feilitzsch, F. v.; Moessbauer, R.L.

1994-01-01

The optimal signal to noise ratio for detectors based on superconducting tunnel junctions is calculated and compared for the cases of a detector consisting of one single tunnel junction, as well as of series and of parallel connections of such tunnel junctions. The influence of 1 / f noise and its dependence on the dynamical resistance of tunnel junctions is discussed quantitatively. A single tunnel junction yields the minimum equivalent noise charge. Such a tunnel junction exhibits the best signal to noise ratio if the signal charge is independent of detector size. In case, signal charge increases with detector size, a parallel or a series connection of tunnel junctions would provide the optimum signal to noise ratio. The equivalent noise charge and the respective signal to noise ratio are deduced as functions of tunnel junction parameters such as tunneling time, quasiparticle lifetime, etc. (orig.)

BPS dynamics of the triple (p,q) string junction

International Nuclear Information System (INIS)

Rey, S.-J.; Yee, J.-T.

1998-01-01

We study the dynamics of the triple junction of (p,q) strings in type IIB string theory. We probe the tension and mass density of (p,q) strings by studying harmonic fluctuations of the triple junction. We show that they agree perfectly with the BPS formula provided a suitable geometric interpretation of the junction is given. We provide a precise statement of the BPS limit and force-balance property. At weak coupling and sufficiently dense limit, we argue that a (p,q) string embedded in the string network is a 'wiggly string', whose low-energy dynamics can be described via a renormalization group evolved, smooth effective non-relativistic string. We also suggest the possibility that, upon type IIB strings being promoted to the M-theory membrane, there can exist 'evanescent' bound-states at the triple junction in the continuum. (orig.)

Enzymatic Degradation of Dynasan 114 SLN - Effect of Surfactants and Particle Size

International Nuclear Information System (INIS)

Olbrich, Carsten; Kayser, Oliver; Mueller, Rainer Helmut

2002-01-01

The degradation velocity of solid lipid nanoparticles (SLN) is - apart from drug diffusion - an important parameter determining drug release in vivo. To assess the effect of stabilizers systematically, Dynasan 114 SLN were produced with ionic surfactants (e.g. cholic acid sodium salt (NaCh), sodium dodecyl sulfate (SDS), cetylpyridiniumchloride (CPC)) and steric stabilizers (Tween 80, Poloxamer 188, 407 and Poloxamine 908) including a mixture of cholic acid sodium salt and Poloxamer 407. In addition, the size effects were investigated. The degradation velocity was measured using an in vitro lipase assay. SLN stabilized with lecithin and NaCh showed the fastest, Tween 80 the intermediate and the high molecular weight Poloxamer 407 the slowest degradation. Size effects were less pronounced for fast degrading particles (e.g. those stabilized with NaCh). No difference in the size range of 180-300-nm was observed, but a distinctly slower degradation of 800-nm SLN could be detected. For slowly degrading particles, more pronounced size effects were found. Size effects are more difficult to assess when the PCS diameters are similar, but small fractions of micrometer particles are present, besides the nanometer bulk population. The measured FFA formation is then a superposition of particles degrading at different speeds due to differences in the shape of the size distribution. Admixing of Poloxamer to NaCh had no delaying effect on the degradation of the Dynasan 114 SLN, indicating an influence of the nature of the lipid matrix that is affecting the stabilizers affinity to and anchoring onto the SLN surface

GaAs nanowire array solar cells with axial p-i-n junctions.

Science.gov (United States)

Yao, Maoqing; Huang, Ningfeng; Cong, Sen; Chi, Chun-Yung; Seyedi, M Ashkan; Lin, Yen-Ting; Cao, Yu; Povinelli, Michelle L; Dapkus, P Daniel; Zhou, Chongwu

2014-06-11

Because of unique structural, optical, and electrical properties, solar cells based on semiconductor nanowires are a rapidly evolving scientific enterprise. Various approaches employing III-V nanowires have emerged, among which GaAs, especially, is under intense research and development. Most reported GaAs nanowire solar cells form p-n junctions in the radial direction; however, nanowires using axial junction may enable the attainment of high open circuit voltage (Voc) and integration into multijunction solar cells. Here, we report GaAs nanowire solar cells with axial p-i-n junctions that achieve 7.58% efficiency. Simulations show that axial junctions are more tolerant to doping variation than radial junctions and lead to higher Voc under certain conditions. We further study the effect of wire diameter and junction depth using electrical characterization and cathodoluminescence. The results show that large diameter and shallow junctions are essential for a high extraction efficiency. Our approach opens up great opportunity for future low-cost, high-efficiency photovoltaics.

Numerical investigation of gas separation in T-junction

Science.gov (United States)

Pao, William; Hashim, Fakhruldin M.; Ming, Low Huei

2015-05-01

T-junctions are commonly used in distributing two-phase flow by piping networks especially in oil and gas industries. Understanding the behavior of two-phase flow through a T-junction is very important as it has significant effect on the operation, maintenance and efficiency of the components downstream from the junction. The objective of this paper is to determine the effect of ratio of side arm to main arm diameters, initial inlet gas saturation and gas density variation on passive separation performance in T-junction. Via computational fluid dynamics tool, preliminary investigation found that separation efficiency is proportional to diameter ratio in between 0.5-0.75. Beyond diameter ratio 0.75, there is a flattening of separation efficiency. The change of fraction of gas taken off is inversely proportional to initial inlet gas saturation and the trend is almost inversely linear for diameter ratio 0.5. Beyond that, the relationship between initial inlet gas saturation and separation efficiency exhibits mild non-linearity behavior. For diameter ratios 0.75-1.0, the fraction of gas taken off is almost similar as far as the initial gas saturation is concerned. Gas density affects phase separation efficiency when the initial gas saturation is low. Interestingly, the effects of the inlet flow velocity and gravity distribution is almost negligible relative to the mass split ratio, side to main arm diameter ratio, initial gas saturation and density differential.

Creation of stable molecular junctions with a custom-designed scanning tunneling microscope.

Science.gov (United States)

Lee, Woochul; Reddy, Pramod

2011-12-02

The scanning tunneling microscope break junction (STMBJ) technique is a powerful approach for creating single-molecule junctions and studying electrical transport in them. However, junctions created using the STMBJ technique are usually mechanically stable for relatively short times (scanning tunneling microscope that enables the creation of metal-single molecule-metal junctions that are mechanically stable for more than 1 minute at room temperature. This stability is achieved by a design that minimizes thermal drift as well as the effect of environmental perturbations. The utility of this instrument is demonstrated by performing transition voltage spectroscopy-at the single-molecule level-on Au-hexanedithiol-Au, Au-octanedithiol-Au and Au-decanedithiol-Au junctions.

Quantum-Tuned Two-Junction Solar Cells

KAUST Repository

Wang, Xihua

2011-01-01

We report quantum-size-effect tuned tandem solar cells. Our two-junction photovoltaic devices employ light-absorbing material of a single composition and use two rationally-selected nanoparticle sizes to harvest the sun’s broad spectrum.

Capacitance measurement of Josephson tunnel junctions with microwave-induced dc quasiparticle tunneling currents

International Nuclear Information System (INIS)

Hamasaki, K.; Yoshida, K.; Irie, F.; Enpuku, K.

1982-01-01

The microwave response of the dc quasiparticle tunneling current in Josephson tunnel junctions, where the Josephson current is suppressed by an external magnetic field, has been studied quantitatively in order to clarify its characteristics as a probe for the measurement of the junction capacitance. Extensive experiments for both small and long junctions are carried out for distinguishing between microwave behaviors of lumped and distributed constant junctions. It is shown that the observed voltage dependence of the dc quasiparticle tunneling current modified by an applied rf field is in good agreement with a theoretical result which takes into account the influence of the microwave circuit connected to the junction. The comparison between theory and experiment gives the magnitude of the internal rf field in the junction. Together with the applied rf field, this internal rf field leads to the junction rf impedance which is dominated by the junction capacitance in our experimental condition. In the case of lumped junctions, this experimental rf impedance is in reasonable agreement with the theoretical one with the junction capacitance estimated from the Fiske step of the distributed junction fabricated on the same substrate; the obtained ratio of the experimental impedance to the theoretical one is approximately 0.6--1.7. In the case of distributed junctions, however, experimental values of their characteristic impedances are approximately 0.2--0.3 of theoretical values calculated by assuming the one-dimensional junction model and taking account of the standing-wave effect in the junction

Microwave oscillator using arrays of long Josephson junctions

International Nuclear Information System (INIS)

Pagano, S.; Monaco, R.; Costabile, G.

1989-01-01

The authors report on measurements performed on integrated superconducting devices based on arrays of long Josephson tunnel junctions operating in the resonant fluxon oscillation regime (i.e. biased on the Zero Field Steps). The electromagnetic coupling among the junction causes a mutual phase-locking of the fluxon oscillations with a corresponding increase of the emitted power and a decrease of the signal linewidth. This phase-locked state can be controlled by means of an external dc bias current and magnetic field. The effect of the generated microwave signal has been observed on a small Josephson tunnel junction coupled to the array via a microstrip transmission line. The feasibility of the reported devices as local oscillators in an integrated microwave Josephson receiver is discussed

The role of remote closure in the perception of occlusion at junctions and illusory contours.

Science.gov (United States)

Gillam, Barbara J; Grove, Philip M; Layden, Jessica

2010-01-01

Abstract. Perceived occlusion at T-junctions or illusory contours at implicit T-junctions are often modelled by using edge information without surface context. We explored the effect of closure on perceived occlusion at T-junctions. Two vertical lines separated by a gap each had six abutting horizontal lines on opposite sides forming T-junctions. These lines were either closed or not closed into pairs at the stem ends of the Ts. In experiment 1, closed T-junction stems gave a much stronger sense of occlusion at the vertical lines than unclosed ones, even though closure information was remote from the putative occlusion and local T-junction information remained constant. When the outer two T-junctions were converted to L-junctions, perceived occlusion considerably diminished. The effect of closure on illusory-contour strength for stimuli like those of experiment 1 but with the vertical lines omitted was explored in experiment 2. The two sets of horizontal lines, separated by a gap, were either closed or not closed into pairs at their outer ends. Illusory-contour strength along the vertical alignments was much greater for closed pairs. Line terminations on both sides of the gap enhanced illusory-contour strength, but whether they were collinear or not had little effect.

Nonlinear thermoelectric effects in high-field superconductor-ferromagnet tunnel junctions

Directory of Open Access Journals (Sweden)

Stefan Kolenda

2016-11-01

Full Text Available Background: Thermoelectric effects result from the coupling of charge and heat transport and can be used for thermometry, cooling and harvesting of thermal energy. The microscopic origin of thermoelectric effects is a broken electron–hole symmetry, which is usually quite small in metal structures. In addition, thermoelectric effects decrease towards low temperatures, which usually makes them vanishingly small in metal nanostructures in the sub-Kelvin regime.Results: We report on a combined experimental and theoretical investigation of thermoelectric effects in superconductor/ferromagnet hybrid structures. We investigate the dependence of thermoelectric currents on the thermal excitation, as well as on the presence of a dc bias voltage across the junction.Conclusion: Large thermoelectric effects are observed in superconductor/ferromagnet and superconductor/normal-metal hybrid structures. The spin-independent signals observed under finite voltage bias are shown to be reciprocal to the physics of superconductor/normal-metal microrefrigerators. The spin-dependent thermoelectric signals in the linear regime are due to the coupling of spin and heat transport, and can be used to design more efficient refrigerators.

Investigation of fluid-structure interaction with various types of junction coupling

Science.gov (United States)

Ahmadi, A.; Keramat, A.

2010-10-01

In this study of water hammer with fluid-structure interaction (FSI) the main aim was the investigation of junction coupling effects. Junction coupling effects were studied in various types of discrete points, such as pumps, valves and branches. The emphasis was placed on an unrestrained pump and branch in the system, and the associated relations were derived for modelling them. Proposed relations were considered as boundary conditions for the numerical modelling which was implemented using the finite element method for the structural equations and the method of characteristics for the hydraulic equations. The results can be used by engineers in finding where junction coupling is significant.

House Dust Mite Der p 1 Effects on Sinonasal Epithelial Tight Junctions

Science.gov (United States)

Henriquez, Oswaldo A.; Beste, Kyle Den; Hoddeson, Elizabeth K.; Parkos, Charles A.; Nusrat, Asma; Wise, Sarah K.

2013-01-01

Background Epithelial permeability is highly dependent upon the integrity of tight junctions, cell-cell adhesion complexes located at the apical aspect of the lateral membrane of polarized epithelial cells. We hypothesize that sinonasal epithelial exposure to Der p 1 house dust mite antigen decreases expression of tight junction proteins (TJPs), representing a potential mechanism for increased permeability and presentation of antigens across the sinonasal epithelial layer. Methods Confluent cultured primary human sinonasal epithelial cells were exposed to recombinant Der p 1 antigen versus control, and transepithelial resistance measurements were performed over 24 hours. Antibody staining for a panel of tight junction proteins was examined with immunofluorescence/confocal microscopy and Western blotting. Tissue for these experiments was obtained from 4 patients total. Results Der p 1 exposed sinonasal cells showed a marked decrease in transepithelial resistance when compared to control cells. In addition, results of Western immunoblot and immunofluorescent labeling demonstrated decreased expression of TJPs claudin-1 and junction adhesion molecule-A (JAM-A) in Der p 1 exposed cultured sinonasal cells versus controls. Conclusion Der p 1 antigen exposure decreases sinonasal epithelium TJP expression, most notably seen in JAM-A and claudin-1 in these preliminary experiments. This decreased TJP expression likely contributes to increased epithelial permeability and represents a potential mechanism for transepithelial antigen exposure in allergic rhinitis. PMID:23592402

Eye lens membrane junctional microdomains: a comparison between healthy and pathological cases

Energy Technology Data Exchange (ETDEWEB)

Buzhynskyy, Nikolay; Scheuring, Simon [Institut Curie, Equipe Inserm Avenir, UMR168-CNRS, 26 Rue d' Ulm, 75248 Paris Cedex 05 (France); Sens, Pierre [ESPCI, CNRS-UMR 7083, 75231 Paris (France); Behar-Cohen, Francine, E-mail: simon.scheuring@curie.fr [UMRS Inserm 872, Universite Paris Descartes, Centre de Recherches des Cordeliers, 15 rue de l' Ecole de Medecine, 75270 Paris Cedex 06 (France)

2011-08-15

The eye lens is a transparent tissue constituted of tightly packed fiber cells. To maintain homeostasis and transparency of the lens, the circulation of water, ions and metabolites is required. Junctional microdomains connect the lens cells and ensure both tight cell-to-cell adhesion and intercellular flow of fluids through a microcirculation system. Here, we overview membrane morphology and tissue functional requirements of the mammalian lens. Atomic force microscopy (AFM) has opened up the possibility of visualizing the junctional microdomains at unprecedented submolecular resolution, revealing the supramolecular assembly of lens-specific aquaporin-0 (AQP0) and connexins (Cx). We compare the membrane protein assembly in healthy lenses with senile and diabetes-II cataract cases and novel data of the lens membranes from a congenital cataract. In the healthy case, AQP0s form characteristic square arrays confined by connexons. In the cases of senile and diabetes-II cataract patients, connexons were degraded, leading to malformation of AQP0 arrays and breakdown of the microcirculation system. In the congenital cataract, connexons are present, indicating probable non-membranous grounds for lens opacification. Further, we discuss the energetic aspects of the membrane organization in junctional microdomains. The AFM hence becomes a biomedical nano-imaging tool for the analysis of single-membrane protein supramolecular association in healthy and pathological membranes.

Eye lens membrane junctional microdomains: a comparison between healthy and pathological cases

Science.gov (United States)

Buzhynskyy, Nikolay; Sens, Pierre; Behar-Cohen, Francine; Scheuring, Simon

2011-08-01

The eye lens is a transparent tissue constituted of tightly packed fiber cells. To maintain homeostasis and transparency of the lens, the circulation of water, ions and metabolites is required. Junctional microdomains connect the lens cells and ensure both tight cell-to-cell adhesion and intercellular flow of fluids through a microcirculation system. Here, we overview membrane morphology and tissue functional requirements of the mammalian lens. Atomic force microscopy (AFM) has opened up the possibility of visualizing the junctional microdomains at unprecedented submolecular resolution, revealing the supramolecular assembly of lens-specific aquaporin-0 (AQP0) and connexins (Cx). We compare the membrane protein assembly in healthy lenses with senile and diabetes-II cataract cases and novel data of the lens membranes from a congenital cataract. In the healthy case, AQP0s form characteristic square arrays confined by connexons. In the cases of senile and diabetes-II cataract patients, connexons were degraded, leading to malformation of AQP0 arrays and breakdown of the microcirculation system. In the congenital cataract, connexons are present, indicating probable non-membranous grounds for lens opacification. Further, we discuss the energetic aspects of the membrane organization in junctional microdomains. The AFM hence becomes a biomedical nano-imaging tool for the analysis of single-membrane protein supramolecular association in healthy and pathological membranes.

Symmetry breaking in SNS junctions: edge transport and field asymmetries

Science.gov (United States)

Suominen, Henri; Nichele, Fabrizio; Kjaergaard, Morten; Rasmussen, Asbjorn; Danon, Jeroen; Flensberg, Karsten; Levitov, Leonid; Shabani, Javad; Palmstrom, Chris; Marcus, Charles

We study magnetic diffraction patterns in a tunable superconductor-semiconductor-superconductor junction. By utilizing epitaxial growth of aluminum on InAs/InGaAs we obtain transparent junctions which display a conventional Fraunhofer pattern of the critical current as a function of applied perpendicular magnetic field, B⊥. By studying the angular dependence of the critical current with applied magnetic fields in the plane of the junction we find a striking anisotropy. We attribute this effect to dephasing of Andreev states in the bulk of the junction, leading to SQUID like behavior when the magnetic field is applied parallel to current flow. Furthermore, in the presence of both in-plane and perpendicular fields, asymmetries in +/-B⊥ are observed. We suggest possible origins and discuss the role of spin-orbit and Zeeman physics together with a background disorder potential breaking spatial symmetries of the junction. Research supported by Microsoft Project Q, the Danish National Research Foundation and the NSF through the National Nanotechnology Infrastructure Network.

Magnetoresistance in Co/AlO sub x /Co tunnel junction arrays

CERN Document Server

Urech, M; Haviland, D B

2002-01-01

Lateral arrays of Co/AlO sub x /Co junctions with dimensions down to 60 nm and inter-junction separations approx 60-100 nm have been fabricated and analyzed for possible coherent tunneling effects. Extra attention is paid to avoid uncertainties due to inconsistencies in switching and/or resistance of successive barriers. We observe approx 10% magnetoresistance enhancement at moderate bias in double junctions that cannot be accounted for by a simple model of two resistsors in series.

Superconductor-Insulator transition in a single Josephson junction

International Nuclear Information System (INIS)

Sonin, E.B.; PenttilA, J.S.; Parts, O.; Hakonen, P.J.; Paalanen, M.A.

1999-01-01

For ultra small Josephson junctions, when quantum effects become important, dissipative phase transition (DPT) has been predicted. The physical origin of this transition is the suppression of macroscopic quantum tunneling of the phase by tile interaction with dissipative quantum-mechanical environment. Macroscopic quantum tunneling destroys superconductivity of a junction, whereas suppression of tunneling restores superconductivity. Hence, this transition is often called a superconductor-insulator transition (SIT). SIT was predicted for various systems, but its detection in a single Josephson junction is of principal importance since it is the simplest system where this transition is expected, without any risk of being masked by other physical processes, as is possible in more complicated systems like regular or' random Josephson junction arrays. In this Letter we present results of our measurements on R = dV/dI vs. I curves, for a variety of single small isolated Josephson junctions, shunted and un shunted, with different values of capacitance C and normal state tunneling resistance RT. We have detected a crossover. between two types of RI-curves with an essentially different behavior at small currents. On the basis of this crossover, we are able to map out the whole phase diagram for a Josephson junction. The position of the observed phase boundary did not agree with that expected from the original theory. However, the theory revised to take into account a finite accuracy of our voltage measurements (viz., the minimum voltage which we are able to detect), explains well the observed phase diagram. Our important conclusion is that the concept of dissipative phase transition (DPT) and superconductor-insulator transition (SIT) are not completely identical as assumed before. Both are accompanied by the sign change of the thermo resistance, which is traditionally considered as a signature of SIT. Thus any DPT is SIT, but not vice versa. We argue that the real signature

Superconducting flux qubits with π-junctions

International Nuclear Information System (INIS)

Shcherbakova, Anastasia

2014-01-01

In this thesis, we present a fabrication technology of Al/AlO x /Al Josephson junctions on Nb pads. The described technology gives the possibility of combining a variety of Nb-based superconducting circuits, like pi-junction phase-shifters with sub-micron Al/AlO x /Al junctions. Using this approach, we fabricated hybrid Nb/Al flux qubits with and without the SFS-junctions and studied dispersive magnetic field response of these qubits as well as their spectroscopy characteristics.

Resonance Transport of Graphene Nanoribbon T-Shaped Junctions

International Nuclear Information System (INIS)

Xiao-Lan, Kong; Yong-Jian, Xiong

2010-01-01

We investigate the transport properties of T-shaped junctions composed of armchair graphene nanoribbons of different widths. Three types of junction geometries are considered. The junction conductance strongly depends on the atomic features of the junction geometry. When the shoulders of the junction have zigzag type edges, sharp conductance resonances usually appear in the low energy region around the Dirac point, and a conductance gap emerges. When the shoulders of the junction have armchair type edges, the conductance resonance behavior is weakened significantly, and the metal-metal-metal junction structures show semimetallic behaviors. The contact resistance also changes notably due to the various interface geometries of the junction

In Situ Irradiation and Measurement of Triple Junction Solar Cells at Low Intensity, Low Temperature (LILT) Conditions

Science.gov (United States)

Harris, R.D.; Imaizumi, M.; Walters, R.J.; Lorentzen, J.R.; Messenger, S.R.; Tischler, J.G.; Ohshima, T.; Sato, S.; Sharps, P.R.; Fatemi, N.S.

2008-01-01

The performance of triple junction InGaP/(In)GaAs/Ge space solar cells was studied following high energy electron irradiation at low temperature. Cell characterization was carried out in situ at the irradiation temperature while using low intensity illumination, and, as such, these conditions reflect those found for deep space, solar powered missions that are far from the sun. Cell characterization consisted of I-V measurements and quantum efficiency measurements. The low temperature irradiations caused substantial degradation that differs in some ways from that seen after room temperature irradiations. The short circuit current degrades more at low temperature while the open circuit voltage degrades more at room temperature. A room temperature anneal after the low temperature irradiation produced a substantial recovery in the degradation. Following irradiation at both temperatures and an extended room temperature anneal, quantum efficiency measurement suggests that the bulk of the remaining damage is in the (In)GaAs sub-cell

Gap junctions are selectively associated with interlocking ball-and-sockets but not protrusions in the lens.

Science.gov (United States)

Biswas, Sondip K; Lee, Jai Eun; Brako, Lawrence; Jiang, Jean X; Lo, Woo-Kuen

2010-11-09

Ball-and-sockets and protrusions are specialized interlocking membrane domains between lens fibers of all species studied. Ball-and-sockets and protrusions are similar in their shape, size, and surface morphology, and are traditionally believed to play a key role in maintaining fiber-to-fiber stability. Here, we evaluate the hypothesis that ball-and-sockets and protrusions possess important structural and functional differences during fiber cell differentiation and maturation. Intact lenses of leghorn chickens (E7 days to P62 weeks old) and rhesus monkeys (1.5-20 years old) were studied with SEM, freeze-fracture TEM, freeze-fracture immunogold labeling (FRIL), and filipin cytochemistry for membrane cholesterol detection. SEM showed that ball-and-sockets were distributed along the long and short sides of hexagonal fiber cells, whereas protrusions were located along the cell corners, from superficial to deep cortical regions in both chicken and monkey lenses. Importantly, by freeze-fracture TEM, we discovered the selective association of gap junctions with all ball-and-sockets examined, but not with protrusions, in both species. In the embryonic chicken lens (E18), the abundant distribution of ball-and-socket gap junctions was regularly found in an approximate zone extending at least 300 μm deep from the equatorial surface of the superficial cortical fibers. Many ball-and-socket gap junctions often protruded deeply into neighboring cells. However, in the mature fibers of monkey lenses, several ball-and-sockets exhibited only partial occupancy of gap junctions with disorganized connexons, possibly due to degradation of gap junctions during fiber maturation and aging. FRIL analysis confirmed that both connexin46 (Cx46) and connexin50 (Cx50) antibodies specifically labeled ball-and-socket gap junctions, but not protrusions. Furthermore, filipin cytochemistry revealed that the ball-and-socket gap junctions contained different amounts of cholesterol (i.e., cholesterol

Testicular cell junction: a novel target for male contraception.

Science.gov (United States)

Lee, Nikki P Y; Wong, Elissa W P; Mruk, Dolores D; Cheng, C Yan

2009-01-01

Even though various contraceptive methods are widely available, the number of unwanted pregnancies is still on the rise in developing countries, pressurizing the already resource limited nations. One of the major underlying reasons is the lack of effective, low cost, and safe contraceptives for couples. During the past decade, some studies were performed using animal models to decipher if the Sertoli-germ cell junction in the testis is a target for male fertility regulation. Some of these study models were based on the use of hormones and/or chemicals to disrupt the hypothalamic-pituitary-testicular axis (e.g., androgen-based implants or pills) and others utilized a panel of chemical entities or synthetic peptides to perturb spermatogenesis either reversibly or non-reversibly. Among them, adjudin, a potential male contraceptive, is one of the compounds exerting its action on the unique adherens junctions, known as ectoplasmic specializations, in the testis. Since the testis is equipped with inter-connected cell junctions, an initial targeting of one junction type may affect the others and these accumulative effects could lead to spermatogenic arrest. This review attempts to cover an innovative theme on how male infertility can be achieved by inducing junction instability and defects in the testis, opening a new window of research for male contraceptive development. While it will still take much time and effort of intensive investigation before a product can reach the consumable market, these findings have provided hope for better family planning involving men.

Bias voltage effect on electron tunneling across a junction with a ferroelectric–ferromagnetic two-phase composite barrier

International Nuclear Information System (INIS)

Wang Jian; Ju Sheng; Li, Z.Y.

2012-01-01

The effect of bias voltage on electron tunneling across a junction with a ferroelectric–ferromagnetic composite barrier is investigated theoretically. Because of the inversion symmetry breaking of the spontaneous ferroelectric polarization, bias voltage dependence of the electron tunneling shows significant differences between the positive bias and the negative one. The differences of spin filtering or tunnel magnetoresistance increase with the increasing absolute value of bias voltage. Such direction preferred electron tunneling is found intimately related with the unusual asymmetry of the electrical potential profile in two-phase composite barrier and provides a unique change to realize rectifying functions in spintronics. - Highlights: ► Electron tunneling across a ferroelectric–ferromagnetic composite barrier junction. ► TMR effect is different under the same value but opposite direction bias voltage. ► This directionality of the electron tunneling enhances with increasing bias voltage.

Creation of stable molecular junctions with a custom-designed scanning tunneling microscope

International Nuclear Information System (INIS)

Lee, Woochul; Reddy, Pramod

2011-01-01

The scanning tunneling microscope break junction (STMBJ) technique is a powerful approach for creating single-molecule junctions and studying electrical transport in them. However, junctions created using the STMBJ technique are usually mechanically stable for relatively short times (<1 s), impeding detailed studies of their charge transport characteristics. Here, we report a custom-designed scanning tunneling microscope that enables the creation of metal–single molecule–metal junctions that are mechanically stable for more than 1 minute at room temperature. This stability is achieved by a design that minimizes thermal drift as well as the effect of environmental perturbations. The utility of this instrument is demonstrated by performing transition voltage spectroscopy—at the single-molecule level—on Au–hexanedithiol–Au, Au–octanedithiol–Au and Au–decanedithiol–Au junctions.

Dynamics of pi-junction interferometer circuits

DEFF Research Database (Denmark)

Kornkev, V.K.; Mozhaev, P.B.; Borisenko, I.V.

2002-01-01

The pi-junction superconducting circuit dynamics was studied by means of numerical simulation technique. Parallel arrays consisting of Josephson junctions of both 0- and pi-type were studied as a model of high-T-c grain-boundary Josephson junction. The array dynamics and the critical current depe...

Proinflammatory cytokines downregulate connexin 43-gap junctions via the ubiquitin-proteasome system in rat spinal astrocytes.

Science.gov (United States)

Zhang, Fang Fang; Morioka, Norimitsu; Kitamura, Tomoya; Hisaoka-Nakashima, Kazue; Nakata, Yoshihiro

2015-09-04

Astrocytic gap junctions formed by connexin 43 (Cx43) are crucial for intercellular communication between spinal cord astrocytes. Various neurological disorders are associated with dysfunctional Cx43-gap junctions. However, the mechanism modulating Cx43-gap junctions in spinal astrocytes under pathological conditions is not entirely clear. A previous study showed that treatment of spinal astrocytes in culture with pro-inflammatory cytokines tumor necrosis factor-α (TNF-α) and interferon-γ (IFN-γ) decreased both Cx43 expression and gap junction intercellular communication (GJIC) via a c-jun N-terminal kinase (JNK)-dependent pathway. The current study further elaborates the intracellular mechanism that decreases Cx43 under an inflammatory condition. Cycloheximide chase analysis revealed that TNF-α (10 ng/ml) alone or in combination with IFN-γ (5 ng/ml) accelerated the degradation of Cx43 protein in cultured spinal astrocytes. The reduction of both Cx43 expression and GJIC induced by a mixture of TNF-α and IFN-γ were blocked by pretreatment with proteasome inhibitors MG132 (0.5 μM) and epoxomicin (25 nM), a mixture of TNF-α and IFN-γ significantly increased proteasome activity and Cx43 ubiquitination. In addition, TNF-α and IFN-γ-induced activation of ubiquitin-proteasome systems was prevented by SP600125, a JNK inhibitor. Together, these results indicate that a JNK-dependent ubiquitin-proteasome system is induced under an inflammatory condition that disrupts astrocytic gap junction expression and function, leading to astrocytic dysfunction and the maintenance of the neuroinflammatory state. Copyright © 2015 Elsevier Inc. All rights reserved.

Effect of phenolic compounds released during degradation of Coir ...

African Journals Online (AJOL)

MICHAEL

www.bioline.org.br/ja. Effect of phenolic compounds released during degradation of Coir pith by ... of the culture filtrate appears to be non toxic in the tested animals @ JASEM. Coir pith is a highly ... degradation of coir pith by fungi and bacteria were already reported, ... no.1 filter paper and used as feed for the experimental ...

Human zonulin, a potential modulator of intestinal tight junctions.

Science.gov (United States)

Wang, W; Uzzau, S; Goldblum, S E; Fasano, A

2000-12-01

Intercellular tight junctions are dynamic structures involved in vectorial transport of water and electrolytes across the intestinal epithelium. Zonula occludens toxin derived from Vibrio cholerae interacts with a specific intestinal epithelial surface receptor, with subsequent activation of a complex intracellular cascade of events that regulate tight junction permeability. We postulated that this toxin may mimic the effect of a functionally and immunologically related endogenous modulator of intestinal tight junctions. Affinity-purified anti-zonula occludens toxin antibodies and the Ussing chamber assay were used to screen for one or more mammalian zonula occludens toxin analogues in both fetal and adult human intestine. A novel protein, zonulin, was identified that induces tight junction disassembly in non-human primate intestinal epithelia mounted in Ussing chambers. Comparison of amino acids in the active zonula occludens toxin fragment and zonulin permitted the identification of the putative receptor binding domain within the N-terminal region of the two proteins. Zonulin likely plays a pivotal role in tight junction regulation during developmental, physiological, and pathological processes, including tissue morphogenesis, movement of fluid, macromolecules and leukocytes between the intestinal lumen and the interstitium, and inflammatory/autoimmune disorders.

Preliminary temperature Accelerated Life Test (ALT) on III-V commercial concentrator triple-junction solar cells

OpenAIRE

Espinet González, Pilar; Algora del Valle, Carlos; Orlando Carrillo, Vincenzo; Nuñez Mendoza, Neftali; Vázquez López, Manuel; Bautista Villares, Jesus; Xiugang, He; Barrutia Poncela, Laura; Rey-Stolle Prado, Ignacio; Araki, Kenji

2012-01-01

A quantitative temperature accelerated life test on sixty GaInP/GaInAs/Ge triple-junction commercial concentrator solar cells is being carried out. The final objective of this experiment is to evaluate the reliability, warranty period, and failure mechanism of high concentration solar cells in a moderate period of time. The acceleration of the degradation is realized by subjecting the solar cells at temperatures markedly higher than the nominal working temperature under a concentrator Three e...

Loss models for long Josephson junctions

DEFF Research Database (Denmark)

Olsen, O. H.; Samuelsen, Mogens Rugholm

1984-01-01

A general model for loss mechanisms in long Josephson junctions is presented. An expression for the zero-field step is found for a junction of overlap type by means of a perturbation method. Comparison between analytic solution and perturbation result shows good agreement.......A general model for loss mechanisms in long Josephson junctions is presented. An expression for the zero-field step is found for a junction of overlap type by means of a perturbation method. Comparison between analytic solution and perturbation result shows good agreement....

Dynamics of the Josephson multi-junction system with junctions characterized by non-sinusoidal current - phase relationship

International Nuclear Information System (INIS)

Abal'osheva, I.; Lewandowski, S.J.

2004-01-01

It is shown that the inclusion of junctions characterized by non-sinusoidal current - phase relationship in the systems composed of multiple Josephson junctions - results in the appearance of additional system phase states. Numerical simulations and stability considerations confirm that those phase states can be realized in practice. Moreover, spontaneous formation of the grain boundary junctions in high-T c superconductors with non-trivial current-phase relations due to the d-wave symmetry of the order parameter is probable. Switching between the phase states of multiple grain boundary junction systems can lead to additional 1/f noise in high-T c superconductors. (author)

Theoretical and experimental investigations on synchronization in many-junction arrays of HTSC Josephson junctions. Final report

International Nuclear Information System (INIS)

Seidel, P.; Heinz, E.; Pfuch, A.; Machalett, F.; Krech, W.; Basler, M.

1996-06-01

Different many-junction arrays of Josephson junctions were studied theoretically to analyse the mechanisms of synchronization, the influence of internal and external parameters and the maximal allowed spread of parameters for the single junctions. Concepts to realize arrays using standard high-T c superconductor technology were created, e.g. the new arrangement of multijunction superconducting loops (MSL). First experimental results show the relevance of this concept. Intrinsic one-dimensional arrays in thin film technology were prepared as mesas out of Bi or Tl 2212 films. to characterize HTSC Josephson junctions methods based on the analysis of microwave-induced steps were developed. (orig.) [de

Single P-N junction tandem photovoltaic device

Science.gov (United States)

Walukiewicz, Wladyslaw [Kensington, CA; Ager, III, Joel W.; Yu, Kin Man [Lafayette, CA

2011-10-18

A single P-N junction solar cell is provided having two depletion regions for charge separation while allowing the electrons and holes to recombine such that the voltages associated with both depletion regions of the solar cell will add together. The single p-n junction solar cell includes an alloy of either InGaN or InAlN formed on one side of the P-N junction with Si formed on the other side in order to produce characteristics of a two junction (2J) tandem solar cell through only a single P-N junction. A single P-N junction solar cell having tandem solar cell characteristics will achieve power conversion efficiencies exceeding 30%.

Modeling of 4H—SiC multi-floating-junction Schottky barrier diode

International Nuclear Information System (INIS)

Hong-Bin, Pu; Lin, Cao; Zhi-Ming, Chen; Jie, Ren; Ya-Gong, Nan

2010-01-01

This paper develops a new and easy to implement analytical model for the specific on-resistance and electric field distribution along the critical path for 4H—SiC multi-floating junction Schottky barrier diode. Considering the charge compensation effects by the multilayer of buried opposite doped regions, it improves the breakdown voltage a lot in comparison with conventional one with the same on-resistance. The forward resistance of the floating junction Schottky barrier diode consists of several components and the electric field can be understood with superposition concept, both are consistent with MEDICI simulation results. Moreover, device parameters are optimized and the analyses show that in comparison with one layer floating junction, multilayer of floating junction layer is an effective way to increase the device performance when specific resistance and the breakdown voltage are traded off. The results show that the specific resistance increases 3.2 mΩ·cm 2 and breakdown voltage increases 422 V with an additional floating junction for the given structure. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Amorphous molecular junctions produced by ion irradiation on carbon nanotubes

International Nuclear Information System (INIS)

Wang Zhenxia; Yu Liping; Zhang Wei; Ding Yinfeng; Li Yulan; Han Jiaguang; Zhu Zhiyuan; Xu Hongjie; He Guowei; Chen Yi; Hu Gang

2004-01-01

Experiments and molecular dynamics have demonstrated that electron irradiation could create molecular junctions between crossed single-wall carbon nanotubes. Recently molecular dynamics computation predicted that ion irradiation could also join single-walled carbon nanotubes. Employing carbon ion irradiation on multi-walled carbon nanotubes, we find that these nanotubes evolve into amorphous carbon nanowires, more importantly, during the process of which various molecular junctions of amorphous nanowires are formed by welding from crossed carbon nanotubes. It demonstrates that ion-beam irradiation could be an effective way not only for the welding of nanotubes but also for the formation of nanowire junctions

Effect of asymmetric interface on charge and spin transport across two dimensional electron gas with Dresselhaus spin-orbit coupling/ferromagnet junction

Science.gov (United States)

Srisongmuang, B.; Pasanai, K.

2018-04-01

We theoretically studied the effect of interfacial scattering on the transport of charge and spin across the junction of a two-dimensional electron gas with Dresselhaus spin-orbit coupling and ferromagnetic material junction, via the conductance (G) and the spin-polarization of the conductance spectra (P) using the scattering method. At the interface, not only were the effects of spin-conserving (Z0) and spin-flip scattering (Zf) considered, but also the interfacial Rashba spin-orbit coupling scattering (ZRSOC) , which was caused by the asymmetry of the interface, was taken into account, and all of them were modeled by the delta potential. It was found that G was suppressed with increasing Z0 , as expected. Interestingly, a particular value of Zf can cause G and P to reach a maximum value. In particular, ZRSOC plays a crucial role to reduce G and P in the metallic limit, but its influence on the tunneling limit was quite weak. On the other hand, the effect of ZRSOC was diminished in the tunneling limit of the magnetic junction.

Characterization of vertical GaN p-n diodes and junction field-effect transistors on bulk GaN down to cryogenic temperatures

Science.gov (United States)

Kizilyalli, I. C.; Aktas, O.

2015-12-01

There is great interest in wide-bandgap semiconductor devices and most recently in vertical GaN structures for power electronic applications such as power supplies, solar inverters and motor drives. In this paper the temperature-dependent electrical behavior of vertical GaN p-n diodes and vertical junction field-effect transistors fabricated on bulk GaN substrates of low defect density (104 to 106 cm-2) is described. Homoepitaxial MOCVD growth of GaN on its native substrate and the ability to control the doping in the drift layers in GaN have allowed the realization of vertical device architectures with drift layer thicknesses of 6 to 40 μm and net carrier electron concentrations as low as 1 × 1015 cm-3. This parameter range is suitable for applications requiring breakdown voltages of 1.2 kV to 5 kV. Mg, which is used as a p-type dopant in GaN, is a relatively deep acceptor (E A ≈ 0.18 eV) and susceptible to freeze-out at temperatures below 200 K. The loss of holes in p-GaN has a deleterious effect on p-n junction behavior, p-GaN contacts and channel control in junction field-effect transistors at temperatures below 200 K. Impact ionization-based avalanche breakdown (BV > 1200 V) in GaN p-n junctions is characterized between 77 K and 423 K for the first time. At higher temperatures the p-n junction breakdown voltage improves due to increased phonon scattering. A positive temperature coefficient in the breakdown voltage is demonstrated down to 77 K; however, the device breakdown characteristics are not as abrupt at temperatures below 200 K. On the other hand, contact resistance to p-GaN is reduced dramatically above room temperature, improving the overall device performance in GaN p-n diodes in all cases except where the n-type drift region resistance dominates the total forward resistance. In this case, the electron mobility can be deconvolved and is found to decrease with T -3/2, consistent with a phonon scattering model. Also, normally-on vertical junction

Signature of a Crossed Andreev Reflection effect (CARE) in YBaCuO/SrRuO3/YBaCuO junctions

International Nuclear Information System (INIS)

Aronov, P.; Gad Koren, G.

2005-01-01

Full Text:Magnetic properties of SFS and SF ramp-type junctions with Y Ba 2 Cu 3 O 7 -YBaCuO-δ electrodes (S), and the itinerant ferromagnet SrRuO 3 (SrO - F), were investigated. We looked for a crossed Andreev reflection effect (CARE) in which an electron from one magnetic domain in F is Andreev reflected as a hole into an adjacent, oppositely polarized, domain while a pair is transmitted into S. CARE is possible in SrO since the width of its domain walls is of the order of the YBaCuO coherence length (2-3nm). Our junctions behave as typical magnetic tunneling junctions, as the conductance spectra were always asymmetric, and a few showed bound state peaks at finite bias which shifted with field according to the classical Tedrow and Meservey theory. In many of our SFS junctions with a barrier thickness of 10-20nm, a prominent zero bias conductance peak (ZBCP) has been observed. This peak was found to decrease linearly with magnetic field, as expected for Andreev and CARE scattering. In contrast, in SF junctions, the observed ZBCP was found to decrease versus field almost exponentially, in agreement with the Anderson-Appelbaum theory of scattering by magnetic states in F. Thus, transport in our SFS and SF junctions depends strongly on the size of the F layer. We also found that in both cases, the ZBCP height at zero field decreased with increasing magnetic order of the domains in F, in agreement with the CARE mechanism

Cost-effective degradation test plan for a nonlinear random-coefficients model

International Nuclear Information System (INIS)

Kim, Seong-Joon; Bae, Suk Joo

2013-01-01

The determination of requisite sample size and the inspection schedule considering both testing cost and accuracy has been an important issue in the degradation test. This paper proposes a cost-effective degradation test plan in the context of a nonlinear random-coefficients model, while meeting some precision constraints for failure-time distribution. We introduce a precision measure to quantify the information losses incurred by reducing testing resources. The precision measure is incorporated into time-varying cost functions to reflect real circumstances. We apply a hybrid genetic algorithm to general cost optimization problem with reasonable constraints on the level of testing precision in order to determine a cost-effective inspection scheme. The proposed method is applied to the degradation data of plasma display panels (PDPs) following a bi-exponential degradation model. Finally, sensitivity analysis via simulation is provided to evaluate the robustness of the proposed degradation test plan.

The physical analysis on electrical junction of junctionless FET

Directory of Open Access Journals (Sweden)

Lun-Chun Chen

2017-02-01

Full Text Available We propose the concept of the electrical junction in a junctionless (JL field-effect-transistor (FET to illustrate the transfer characteristics of the JL FET. In this work, nanowire (NW junctionless poly-Si thin-film transistors are used to demonstrate this conception of the electrical junction. Though the dopant and the dosage of the source, of the drain, and of the channel are exactly the same in the JL FET, the transfer characteristics of the JL FET is similar to these of the conventional inversion-mode FET rather than these of a resistor, which is because of the electrical junction at the boundary of the gate and the drain in the JL FET. The electrical junction helps us to understand the JL FET, and also to explain the superior transfer characteristic of the JL FET with the gated raised S/D (Gout structure which reveals low drain-induced-barrier-lowering (DIBL and low breakdown voltage of ion impact ionization.

Molecular electronics: some views on transport junctions and beyond.

Science.gov (United States)

Joachim, Christian; Ratner, Mark A

2005-06-21

The field of molecular electronics comprises a fundamental set of issues concerning the electronic response of molecules as parts of a mesoscopic structure and a technology-facing area of science. We will overview some important aspects of these subfields. The most advanced ideas in the field involve the use of molecules as individual logic or memory units and are broadly based on using the quantum state space of the molecule. Current work in molecular electronics usually addresses molecular junction transport, where the molecule acts as a barrier for incoming electrons: This is the fundamental Landauer idea of "conduction as scattering" generalized to molecular junction structures. Another point of view in terms of superexchange as a guiding mechanism for coherent electron transfer through the molecular bridge is discussed. Molecules generally exhibit relatively strong vibronic coupling. The last section of this overview focuses on vibronic effects, including inelastic electron tunneling spectroscopy, hysteresis in junction charge transport, and negative differential resistance in molecular transport junctions.

Impact of exchange-correlation effects on the IV characteristics of a molecular junction

DEFF Research Database (Denmark)

Thygesen, Kristian Sommer

2008-01-01

The role of exchange-correlation effects in nonequilibrium quantum transport through molecular junctions is assessed by analyzing the IV curve of a generic two-level model using self-consistent many-body perturbation theory (second Born and GW approximations) on the Keldysh contour. It is demonst...... of dynamic correlations introduces quasiparticle (QP) scattering which in turn broadens the molecular resonances. The broadening increases strongly with bias and can have a large impact on the calculated IV characteristic....

The anatomical locus of T-junction processing.

Science.gov (United States)

Schirillo, James A

2009-07-01

Inhomogeneous surrounds can produce either asymmetrical or symmetrical increment/decrement induction by orienting T-junctions to selectively group a test patch with surrounding regions [Melfi, T., & Schirillo, J. (2000). T-junctions in inhomogeneous surrounds. Vision Research, 40, 3735-3741]. The current experiments aimed to determine where T-junctions are processed by presenting each eye with a different image so that T-junctions exist only in the fused percept. Only minor differences were found between retinal and cortical versus cortical-only conditions, indicating that T-junctions are processed cortically.

Effects of junction resistance and counterelectrode material on point-contact tunneling into single- and polycrystalline YBa/sub 2/Cu/sub 3/O/sub 7-y/

Energy Technology Data Exchange (ETDEWEB)

Moog, E.R.; Hawley, M.E.; Gray, K.E.; Liu, J.Z.; Hinks, D.G.; Capone, D.W. II; Downey, J.

1988-06-01

The effects of junction resistance and counterelectrode material on the results of point-contact tunneling studies into single- and polycrystalline YBa/sub 2/Cu/sub 3/O/sub 7-y/ are illustrated. Although reasonably symmetric I(V) curves predominantly indicate energy gap values /Delta/ /approx/ 20 meV, large asymmetries are often found for high-resistance junctions. Very low-resistance junctions show the expected behavior of pure metallic bridge and indicate /Delta/ /approx/ 25-30 meV.

Current-induced forces: a new mechanism to induce negative differential resistance and current-switching effect in molecular junctions

Science.gov (United States)

Gu, Lei; Fu, Hua-Hua

2015-12-01

Current-induced forces can excite molecules, polymers and other low-dimensional materials, which in turn leads to an effective gate voltage through Holstein interaction. Here, by taking a short asymmetric DNA junction as an example, and using the Langevin approach, we find that when suppression of charge transport by the effective gate voltage surpasses the current increase from an elevated voltage bias, the current-voltage (I-V) curves display strong negative differential resistance (NDR) and perfect current-switching characteristics. The asymmetric DNA chain differs in mechanical stability under inverse voltages and the I-V curve is asymmetric about inverse biases, which can be used to understand recent transport experiments on DNA chains, and meanwhile provides a new strategy to realize NDR in molecular junctions and other low-dimensional quantum systems.

Current-induced forces: a new mechanism to induce negative differential resistance and current-switching effect in molecular junctions

International Nuclear Information System (INIS)

Gu, Lei; Fu, Hua-Hua

2015-01-01

Current-induced forces can excite molecules, polymers and other low-dimensional materials, which in turn leads to an effective gate voltage through Holstein interaction. Here, by taking a short asymmetric DNA junction as an example, and using the Langevin approach, we find that when suppression of charge transport by the effective gate voltage surpasses the current increase from an elevated voltage bias, the current-voltage (I–V) curves display strong negative differential resistance (NDR) and perfect current-switching characteristics. The asymmetric DNA chain differs in mechanical stability under inverse voltages and the I–V curve is asymmetric about inverse biases, which can be used to understand recent transport experiments on DNA chains, and meanwhile provides a new strategy to realize NDR in molecular junctions and other low-dimensional quantum systems. (paper)

Mixing in T-junctions

NARCIS (Netherlands)

Kok, Jacobus B.W.; van der Wal, S.

1996-01-01

The transport processes that are involved in the mixing of two gases in a T-junction mixer are investigated. The turbulent flow field is calculated for the T-junction with the k- turbulence model by FLOW3D. In the mathematical model the transport of species is described with a mixture fraction

Thermopower in double planar tunnel junctions with ferromagnetic barriers and nonmagnetic electrodes

Energy Technology Data Exchange (ETDEWEB)

Wilczyński, M., E-mail: wilczyns@if.pw.edu.pl

2017-01-01

The Seebeck effect is investigated in double planar tunnel junctions consisting of nonmagnetic electrodes and the central layer separated by ferromagnetic barriers. Calculations are performed in the linear response theory using the free-electron model. The thermopower is analyzed as a function of the thickness of the central layer, temperature of the junctions and the relative orientation of magnetic moments of the barriers. It has been found that the thermopower can be significantly enhanced in the junction with special central layer thickness due to electron tunneling by resonant states. The thickness of the central layer for which the thermopower is enhanced depends not only on the temperature of the junction but also on the orientation of magnetic moments in the barriers. - Highlights: • Thermopower in the double planar junctions with magnetic barriers is analyzed. • Thermopower can be enhanced due to the resonant tunneling. • Thermopower depends on the magnetic configuration of the junction.

The Wiedemann—Franz law in a normal metal—superconductor junction

International Nuclear Information System (INIS)

Ghanbari R; Rashedi G

2011-01-01

In this paper the influence of superconducting correlations on the thermal and charge conductances in a normal metal—superconductor (NS) junction in the clean limit is studied theoretically. First we solve the quasiclassical Eilenberger equations, and using the obtained density of states we can acquire the thermal and electrical conductances for the NS junction. Then we compare the conductance in a normal region of an NS junction with that in a single layer of normal metal (N). Moreover, we study the Wiedemann—Franz (WF) law for these two cases (N and NS). From our calculations we conclude that the behaviour of the NS junction does not conform to the WF law for all temperatures. The effect of the thickness of normal metal on the thermal conductivity is also theoretically investigated in the paper. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Large resistance change on magnetic tunnel junction based molecular spintronics devices

Science.gov (United States)

Tyagi, Pawan; Friebe, Edward

2018-05-01

Molecular bridges covalently bonded to two ferromagnetic electrodes can transform ferromagnetic materials and produce intriguing spin transport characteristics. This paper discusses the impact of molecule induced strong coupling on the spin transport. To study molecular coupling effect the octametallic molecular cluster (OMC) was bridged between two ferromagnetic electrodes of a magnetic tunnel junction (Ta/Co/NiFe/AlOx/NiFe/Ta) along the exposed side edges. OMCs induced strong inter-ferromagnetic electrode coupling to yield drastic changes in transport properties of the magnetic tunnel junction testbed at the room temperature. These OMCs also transformed the magnetic properties of magnetic tunnel junctions. SQUID and ferromagnetic resonance studies provided insightful data to explain transport studies on the magnetic tunnel junction based molecular spintronics devices.

Vortex dynamics in two-dimensional Josephson junction arrays with asymmetrically bimodulated potential

International Nuclear Information System (INIS)

Nie, Qing-Miao; Zhang, Sha-Sha; Chen, Qing-Hu; Zhou, Wei

2012-01-01

On the basis of resistively-shunted junction dynamics, we study vortex dynamics in two-dimensional Josephson junction arrays with asymmetrically single and bimodulated periodic pinning potential for the full range of vortex density f. The ratchet effect occurring at a certain range of temperature, current, and f, is observed in our simulation. We explain the microscopic behavior behind this effect by analyzing the vortex distribution and interaction. The reversal of the ratchet effect can be observed at several f values for a small driven current. This effect is stronger when the asymmetric potential is simultaneously introduced in two directions. -- Highlights: ► The ratchet effect in Josephson junction arrays strongly depends on vortex density. ► The reversed ratchet effect can be observed at several f for a small current. ► The interaction between vortices can explain the reversed ratchet effect. ► The ratchet effect is enhanced by injecting the bimodulated asymmetric potential.

Piezo-tunnel effect in Al/Al2O3/Al junctions elaborated by atomic layer deposition

Science.gov (United States)

Rafael, R.; Puyoo, E.; Malhaire, C.

2017-11-01

In this work, the electrical transport in Al/Al2O3/Al junctions under mechanical stress is investigated in the perspective to use them as strain sensors. The metal/insulator/metal junctions are elaborated with a low temperature process (≤200 °C) fully compatible with CMOS back-end-of-line. The conduction mechanism in the structure is found to be Fowler-Nordheim tunneling, and efforts are made to extract the relevant physical parameters. Gauge factors up to -32.5 were found in the fabricated devices under tensile stress. Finally, theoretical mechanical considerations give strong evidence that strain sensitivity in Al/Al2O3/Al structures originates not only from geometrical deformations but also from the variation of interface barrier height and/or effective electronic mass in the tunneling oxide layer.

Trichomonas vaginalis perturbs the junctional complex in epithelial cells

Institute of Scientific and Technical Information of China (English)

无

2005-01-01

Trichomonas vaginalis, a protist parasite of the urogenital tract in humans, is the causative agent of trichomonosis,which in recent years have been associated with the cervical cancer development. In the present study we analyzed the modifications at the junctional complex level of Caco-2 cells after interaction with two isolates of T. vaginalis and the influence of the iron concentration present in the parasite's culture medium on the interaction effects. Our results show that T. vaginalis adheres to the epithelial cell causing alterations in the junctional complex, such as: (a) a decrease in transepithelial electrical resistance; (b) alteration in the pattern of junctional complex proteins distribution as obseryed for E-cadherin, occludin and ZO-1; and (c) enlargement of the spaces between epithelial cells. These effects were dependent on (a) the degree of the parasite virulence isolate, (b) the iron concentration in the culture medium, and (c) the expression of adhesin proteins on the parasite surface.

Thermally activated phase slippage in high-Tc grain-boundary Josephson junctions

International Nuclear Information System (INIS)

Gross, R.; Chaudhari, P.; Dimos, D.; Gupta, A.; Koren, G.

1990-01-01

The effect of thermally activated phase slippage (TAPS) in YBa 2 Cu 3 O 7 grain-boundary Josephson junctions has been studied. TAPS has been found to be responsible for the dc noise voltage superimposed on the dc Josephson current near the transition temperature. Because of the reduced Josephson coupling energy of the grain-boundary junctions, which is caused by a reduced superconducting order parameter at the grain-boundary interface, TAPS is present over a considerable temperature range. The implications of TAPS on the applicability of high-T c Josephson junctions are outlined

Gemcitabine intercellular diffusion mediated by gap junctions: new implications for cancer therapy

Directory of Open Access Journals (Sweden)

Caruso Manuel

2010-06-01

Full Text Available Abstract Background Solid tumors are often poorly vascularized, with cells that can be 100 μm away from blood vessels. These distant cells get less oxygen and nutrients and are exposed to lower doses of chemotherapeutic agents. As gap junctions allow the passage of small molecules between cells, we tested the possibility that the chemotherapeutic agent gemcitabine can diffuse through gap junctions in solid tumors. Results We first showed with a dye transfer assay that the glioblastoma and the osteosarcoma cells used in this study have functional gap junctions. These cells were genetically engineered to express the herpes simplex virus thymidine kinase (TK, and induced a "bystander effect" as demonstrated by the killing of TK-negative cells in presence of the nucleoside analogue ganciclovir (GCV. The ability of gemcitabine to induce a similar bystander effect was then tested by mixing cells treated with 3 μM gemcitabine for 24 hours with untreated cells at different ratios. In all cell lines tested, bystander cells were killed with ratios containing as low as 5% treated cells, and this toxic effect was reduced in presence of α-glycyrrhetinic acid (AGA, a specific gap junction inhibitor. We also showed that a 2- or a 24-hour gemcitabine treatment was more efficient to inhibit the growth of spheroids with functional gap junctions as compared to the same treatment made in presence of AGA. Finally, after a 24-hour gemcitabine treatment, the cell viability in spheroids was reduced by 92% as opposed to 51% in presence of AGA. Conclusion These results indicate that gemcitabine-mediated toxicity can diffuse through gap junctions, and they suggest that gemcitabine treatment could be more efficient for treating solid tumors that display gap junctions. The presence of these cellular channels could be used to predict the responsiveness to this nucleoside analogue therapy.

Poster - Thur Eve - 57: Craniospinal irradiation with jagged-junction IMRT approach without beam edge matching for field junctions.

Science.gov (United States)

Cao, F; Ramaseshan, R; Corns, R; Harrop, S; Nuraney, N; Steiner, P; Aldridge, S; Liu, M; Carolan, H; Agranovich, A; Karva, A

2012-07-01

Craniospinal irradiation were traditionally treated the central nervous system using two or three adjacent field sets. A intensity-modulated radiotherapy (IMRT) plan (Jagged-Junction IMRT) which overcomes problems associated with field junctions and beam edge matching, improves planning and treatment setup efficiencies with homogenous target dose distribution was developed. Jagged-Junction IMRT was retrospectively planned on three patients with prescription of 36 Gy in 20 fractions and compared to conventional treatment plans. Planning target volume (PTV) included the whole brain and spinal canal to the S3 vertebral level. The plan employed three field sets, each with a unique isocentre. One field set with seven fields treated the cranium. Two field sets treated the spine, each set using three fields. Fields from adjacent sets were overlapped and the optimization process smoothly integrated the dose inside the overlapped junction. For the Jagged-Junction IMRT plans vs conventional technique, average homogeneity index equaled 0.08±0.01 vs 0.12±0.02, and conformity number equaled 0.79±0.01 vs 0.47±0.12. The 95% isodose surface covered (99.5±0.3)% of the PTV vs (98.1±2.0)%. Both Jagged-Junction IMRT plans and the conventional plans had good sparing of the organs at risk. Jagged-Junction IMRT planning provided good dose homogeneity and conformity to the target while maintaining a low dose to the organs at risk. Jagged-Junction IMRT optimization smoothly distributed dose in the junction between field sets. Since there was no beam matching, this treatment technique is less likely to produce hot or cold spots at the junction in contrast to conventional techniques. © 2012 American Association of Physicists in Medicine.

Aging and its circumvention in rf-plasma oxidized Pb-alloy Josephson junctions

International Nuclear Information System (INIS)

Wada, M.; Nakano, J.

1987-01-01

The aging phenomenon of Pb-alloy Josephson junctions is investigated and an effective method of circumventing it is presented. Junctions consist of Pb-alloy electrodes and a tunneling barrier formed by rf-plasma oxidation of the Pb-alloy. First, aging and annealing-driven change in normal tunneling resistance are compared to verify the usage of annealing as an experimental method for simulation and acceleration of aging. Next, process variables affecting the annealing change in junction characteristics are examined and their influence is described. The importance of the oxide-base electrode interface is confirmed and that of the counterelectrode-oxide interface is experimentally shown. Furthermore, possible changes in the oxide itself are discussed. Finally, on the basis of these studies, rf-plasma oxidation in a CO 2 atmosphere is employed and proven to be an effective method for circumventing the annealing change in the junction characteristics

Enhanced Photocatalytic Performance of NiO-Decorated ZnO Nanowhiskers for Methylene Blue Degradation

Directory of Open Access Journals (Sweden)

I. Abdul Rahman

2014-01-01

Full Text Available ZnO nanowhiskers were used for photodecomposition of methylene blue in aqueous solution under UV irradiation. The rate of methylene blue degradation increased linearly with time of UV irradiation. 54% of degradation rate was observed when the ZnO nanowhiskers were used as photocatalysts for methylene blue degradation for 80 min under UV irradiation. The decoration of p-type NiO nanoparticles on n-type ZnO nanowhiskers significantly enhanced photocatalytic activity and reached 72% degradation rate of methylene blue by using the same method. NiO-decorated ZnO was recycled for second test and shows 66% degradation from maximal peak of methylene blue within the same period. The increment of photocatalytic activity of NiO-decorated ZnO nanowhiskers was explained by the extension of the electron depletion layer due to the formation of nanoscale p-n junctions between p-type NiO and n-type ZnO. Hence, these products provide new alternative proficient photocatalysts for wastewater treatment.

Clofibric acid degradation in UV254/H2O2 process: effect of temperature.

Science.gov (United States)

Li, Wenzhen; Lu, Shuguang; Qiu, Zhaofu; Lin, Kuangfei

2010-04-15

The degradation of clofibric acid (CA) in UV(254)/H(2)O(2) process under three temperature ranges, i.e. T1 (9.0-11.5 degrees C), T2 (19.0-21.0 degrees C) and T3 (29.0-30.0 degrees C) was investigated. The effects of solution constituents including NO(3)(-) and HCO(3)(-) anions, and humic acid (HA) on CA degradation were evaluated in Milli-Q waters. CA degradation behaviors were simulated with the pseudo-first-order kinetic model and the apparent rate constant (k(ap)) and half-life time (t(1/2)) were calculated. The results showed that higher temperature would favor CA degradation, and CA degradation was taken place mostly by indirect oxidation through the formation of OH radicals in UV(254)/H(2)O(2) process. In addition, the effects of both NO(3)(-) and HCO(3)(-) anions at two selected concentrations (1.0x10(-3) and 0.1 mol L(-1)) and HA (20 mg L(-1)) on CA degradation were investigated. The results showed that HA had negative effect on CA degradation, and this effect was much more apparent under low temperature condition. On the other hand, the inhibitive effect on CA degradation at both lower and higher concentrations of bicarbonate was observed, and this inhibitive effect was much more apparent at higher bicarbonate concentration and lower temperature condition. While, at higher nitrate concentration the inhibitive effect on CA degradation under three temperature ranges was observed, and with the temperature increase this negative effect was apparently weakened. However, at lower nitrate concentration a slightly positive effect on CA degradation was found under T2 and T3 conditions. Moreover, when using a real wastewater treatment plant (WWTP) effluent spiked with CA over 99% of CA removal could be achieved under 30 degrees C within only 15 min compared with 40 and 80 min under 20 and 10 degrees C respectively, suggesting a significant promotion in CA degradation under higher temperature condition. Therefore, it can be concluded that temperature plays an

Eight-logic memory cell based on multiferroic junctions

International Nuclear Information System (INIS)

Yang Feng; Zhou, Y C; Tang, M H; Liu Fen; Ma Ying; Zheng, X J; Zhao, W F; Xu, H Y; Sun, Z H

2009-01-01

A model is proposed for a device combining a multiferroic tunnel junction with a magnetoelectric (ME) film in which the magnetic configuration is controlled by the electric field. Calculations embodying the Green's function approach show that the magnetic polarization can be switched on and off by an electric field in the ME film due to the effect of elastic coupling interaction. Using a model including the spin-filter effect and screening of polarization charges, we have produced eight logic states of tunnelling resistance in the tunnel junction and have obtained corresponding laws that control them. The results provide some insights into the realization of an eight-logic memory cell. (fast track communication)

[Gap junctions: A new therapeutic target in major depressive disorder?].

Science.gov (United States)

Sarrouilhe, D; Dejean, C

2015-11-01

Major depressive disorder is a multifactorial chronic and debilitating mood disease with high lifetime prevalence and is associated with excess mortality, especially from cardiovascular diseases and through suicide. The treatments of this disease with tricyclic antidepressants and monoamine oxidase inhibitors are poorly tolerated and those that selectively target serotonin and norepinephrine re-uptake are not effective in all patients, showing the need to find new therapeutic targets. Post-mortem studies of brains from patients with major depressive disorders described a reduced expression of the gap junction-forming membrane proteins connexin 30 and connexin 43 in the prefrontal cortex and the locus coeruleus. The use of chronic unpredictable stress, a rodent model of depression, suggests that astrocytic gap junction dysfunction contributes to the pathophysiology of major depressive disorder. Chronic treatments of rats with fluoxetine and of rat cultured cortical astrocytes with amitriptyline support the hypothesis that the upregulation of gap junctional intercellular communication between brain astrocytes could be a novel mechanism for the therapeutic effect of antidepressants. In conclusion, astrocytic gap junctions are emerging as a new potential therapeutic target for the treatment of patients with major depressive disorder. Copyright © 2015 Elsevier Masson SAS. All rights reserved.

Phase synchronisation in mutually coupled chaotic Josephson junctions: Effect of asymmetry and incommensurate frequencies

International Nuclear Information System (INIS)

Al-Khawaja, S.

2011-01-01

In this paper, synchronising two coupled ratchet Josephson junctions subjected to a quasiperiodic field is achieved. In the limit of weak perturbation of irrational frequencies equal to the square root of the transcendental number π and for small damping parameters, phase locking occurs as the coupling between both junctions is increased. It turns out that the transition from non-synchronous to synchronous chaotic state does not involve attractors appearing and disappearing. The undertaken symmetry analysis of the system demonstrates the suppression of the massive phase fluctuations as the coupling rises, allowing chaos synchronisation between both junctions to take place. The calculations also reveal the persistence of the synchronous state for high coupling strengths, taking into consideration the symmetry particularity of the external drive and potential. (author)

Phase Synchronisation in Mutually Coupled Chaotic Josephson Junctions: Effect of Asymmetry and Incommensurate Frequencies

International Nuclear Information System (INIS)

Sameer Al-Khawaja

2010-01-01

In this paper, synchronising two coupled ratchet Josephson junctions subjected to a quasiperiodic field is achieved. In the limit of weak perturbation of irrational frequencies equal to the square root of the transcendental number π and for small damping parameters, phase locking occurs as the coupling between both junctions is increased. It turns out that the transition from non-synchronous to synchronous chaotic state does not involve attractors appearing and disappearing. The undertaken symmetry analysis of the system demonstrates the suppression of the massive phase fluctuations as the coupling rises, allowing chaos synchronisation between both junctions to take place. The calculations also reveal the persistence of the synchronous state for high coupling strengths, taking into consideration the symmetry particularity of the external drive and potential. (author)

Degradation of shape memory effect

International Nuclear Information System (INIS)

Vandermeer, R.A.

1983-01-01

An important parameter for deciding whether or not a SME alloy is suitable for practical applications is the magnitude of the strain reversal accompanying martensite reversion. This research is concerned with elucidating metallurgical factors that cause degradation of this heat-activated recovery strain, E/sub R/. After explaining what is meant by degradation, two manifestations of degradation recently identified in near-monotectoid uranium-niobium alloys are described. The first was associated with the onset of plastic deformation of the martensite beyond the reversible strain limit, E/sub L/; a reduction of E/sub R/ from 5.25% at 8% total strain, i.e. E/sub L/, to 2.9% at 12% total strain was observed. A second type of degradation depended strongly on the heating rate during reversion; the E/sub R/ for an imposed strain of 6.95% was reduced from a value of 5.25% to 1.3% when the heating rate was decreased from 40 0 /sec to 0.05 0 /sec. Degradation was attributed to a change in the transformation path and the interjection of time-dependent, low temperature aging reactions

Terbinafine inhibits gap junctional intercellular communication

International Nuclear Information System (INIS)

Lee, Ju Yeun; Yoon, Sei Mee; Choi, Eun Ju; Lee, Jinu

2016-01-01

Terbinafine is an antifungal agent that selectively inhibits fungal sterol synthesis by blocking squalene epoxidase. We evaluated the effect of terbinafine on gap junctional intercellular communication (GJIC). Fluorescence recovery after photobleaching (FRAP) and I-YFP GJIC assays revealed that terbinafine inhibits GJIC in a reversible and dose-dependent manner in FRT-Cx43 and LN215 cells. Treatment with terbinafine did not affect Cx43 phosphorylation status or intracellular Ca 2+ concentration, well-known action mechanisms of various GJIC blockers. While a structurally related chemical, naftifine, attenuated GJIC, epigallocatechin gallate, another potent squalene epoxidase inhibitor with a different structure, did not. These results suggest that terbinafine inhibits GJIC with a so far unknown mechanism of action. - Highlights: • In vitro pharmacological studies were performed on FRT-Cx43 and LN215 cells. • Terbinafine inhibits gap junctional intercellular communication in both cell lines. • The inhibitory effect of terbinafine is reversible and dose-dependent. • Treatment of terbinafine does not alter Cx43 phosphorylation or cytosolic Ca 2+ concentration. • Inhibition of squalene epoxidase is not involved in this new effect of terbinafine.

delta-biased Josephson tunnel junctions

DEFF Research Database (Denmark)

Monaco, R.; Mygind, Jesper; Koshelet, V.

2010-01-01

Abstract: The behavior of a long Josephson tunnel junction drastically depends on the distribution of the dc bias current. We investigate the case in which the bias current is fed in the central point of a one-dimensional junction. Such junction configuration has been recently used to detect...... the persistent currents circulating in a superconducting loop. Analytical and numerical results indicate that the presence of fractional vortices leads to remarkable differences from the conventional case of uniformly distributed dc bias current. The theoretical findings are supported by detailed measurements...

Junction depth measurement using carrier illumination

International Nuclear Information System (INIS)

Borden, Peter

2001-01-01

Carrier Illumination [trade mark] (CI) is a new method recently developed to meet the need for a non-destructive, high throughput junction depth measurement on patterned wafers. A laser beam creates a quasi-static excess carrier profile in the semiconductor underlying the activated junction. The excess carrier profile is fairly constant below the junction, and drops rapidly in the junction, creating a steep index of refraction gradient at the junction edge. Interference with light reflected from this index gradient provides a signal that is analyzed to determine the junction depth. The paper summarizes evaluation of performance in full NMOS and PMOS process flows, on both bare and patterned wafers. The aims have been to validate (1) performance in the presence of underlying layers typically found at the source/drain (S/D) process steps and (2) measurement on patterned wafers. Correlation of CI measurements to SIMS and transistor drive current are shown. The data were obtained from NMOS structures using As S/D and LDD implants. Correlations to SRP, SIMS and sheet resistance are shown for PMOS structures using B 11 LDD implants. Gage capability measurements are also presented

Dynamics of a nanoscale Josephson junction probed by scanning tunneling microscopy

Energy Technology Data Exchange (ETDEWEB)

Ast, Christian R.; Jaeck, Berthold; Eltschka, Matthias; Etzkorn, Markus [Max-Planck-Institut fuer Festkoerperforschung, Stuttgart (Germany); Kern, Klaus [Max-Planck-Institut fuer Festkoerperforschung, Stuttgart (Germany); Institut de Physique de la Matiere Condensee, EPFL, Lausanne (Switzerland)

2015-07-01

The Josephson effect is an intriguing phenomenon as it presents an interplay of different energy scales, such as the Josephson energy ε{sub J} (critical current), charging energy ε{sub C}, and temperature T. Using a scanning tunneling microscope (STM) operating at a base temperature of 15 mK, we create a nanoscale superconductor-vacuum-superconductor tunnel junction in an extremely underdamped regime (Q>>10). We observe extremely small retrapping currents also owing to strongly reduced ohmic losses in the well-developed superconducting gaps. While formally operating in the zero temperature limit, i.e. the temperature T is smaller than the Josephson plasma frequency ω{sub J} (k{sub B}T<<ℎω{sub J}=√(8ε{sub J}ε{sub C})), experimentally other phenomena, such as stray photons, may perturb the Josephson junction, leading to an effectively higher temperature. The dynamics of the Josephson junction can be addressed experimentally by looking at characteristic parameters, such as the switching current and the retrapping current. We discuss the dynamics of the Josephson junction in the context of reaching the zero temperature limit.

NbN tunnel junctions

International Nuclear Information System (INIS)

Villegier, J.C.; Vieux-Rochaz, L.; Goniche, M.; Renard, P.; Vabre, M.

1984-09-01

All-niobium nitride Josephon junctions have been prepared successfully using a new processing called SNOP: Selective Niobium (nitride) Overlap Process. Such a process involves the ''trilayer'' deposition on the whole wafer before selective patterning of the electrodes by optically controlled dry reactive ion etching. Only two photomask levels are need to define an ''overlap'' or a ''cross-type'' junction with a good accuracy. The properties of the niobium nitride films deposited by DC-magnetron sputtering and the surface oxide growth are analysed. The most critical point to obtain high quality and high gap value junctions resides in the early stage of the NbN counterelectrode growth. Some possibilities to overcome such a handicap exist even if the fabrication needs substrate temperatures below 250 0 C

Magnetoresistance of galfenol-based magnetic tunnel junction

International Nuclear Information System (INIS)

Gobaut, B.; Vinai, G.; Castán-Guerrero, C.; Krizmancic, D.; Panaccione, G.; Torelli, P.; Rafaqat, H.; Roddaro, S.; Rossi, G.; Eddrief, M.; Marangolo, M.

2015-01-01

The manipulation of ferromagnetic layer magnetization via electrical pulse is driving an intense research due to the important applications that this result will have on memory devices and sensors. In this study we realized a magnetotunnel junction in which one layer is made of Galfenol (Fe 1-x Ga x ) which possesses one of the highest magnetostrictive coefficient known. The multilayer stack has been grown by molecular beam epitaxy and e-beam evaporation. Optical lithography and physical etching have been combined to obtain 20x20 micron sized pillars. The obtained structures show tunneling conductivity across the junction and a tunnel magnetoresistance (TMR) effect of up to 11.5% in amplitude

The effect of platelet rich plasma from bone marrow aspirate with added bone morphogenetic protein-2 on the Achilles tendon-bone junction in rabbits.

Science.gov (United States)

Kim, Hak Jun; Nam, Hyok-Woo; Hur, Chang-Yong; Park, Misu; Yang, Hee Seok; Kim, Byung-Soo; Park, Jung-Ho

2011-12-01

To determine if exogenously injected bone marrow derived platelet-rich plasma (PRP) plus bone morphogenetic protein (BMP)-2 could accelerate the healing of bone-tendon junction injuries and increase the junction holding strength during the early regeneration period. A direct injury model of the bone-tendon junction was made using an Achilles tendon-calcaneus bone junction in a rabbit. In the PRP/BMP-2/fibrin group, 0.05 mL of bone marrow derived PRP and 100 ng/mL of BMP-2 both incorporated into 0.1 mL of fibrin glue were injected into Achilles tendon-calcaneus bone junctions. The effect of the intervention was tested by comparing the results of an intervention group to a control group. The results of biomechanical testing, and histological and gross analyses were compared between the 2 groups at the following time points after surgery: 2 weeks, 4 weeks, and 8 weeks. Histologic examinations showed that woven bone developed in tendon-bone junctions at 2 weeks after surgery in the PRP/BMP-2/fibrin group. Mechanical test results showed no significant difference between the PRP/BMP-2/fibrin and control groups at 2 and 4 weeks after surgery, but the mean maximal load in the PRP/BMP-2/fibrin group was significantly higher than in the control group (p rabbit model of tendon-bone junction injury.

[Inhibition of gap junctional intercellular communication protects astrocytes from hypoxia/reoxygenation injury].

Science.gov (United States)

Tong, Xu-Hui; Gu, Yu-Chen; Jiao, Hao; Yu, Li; Dong, Shu-Ying

2015-01-01

To investigate the effects of inhibiting gap junctional intercellular communication on hypoxia/reoxygenation injury in astrocytes. Primary cultured cerebral cortical astrocytes of neonate rats were divided into normal control group, hypoxia reoxygenation injury group and 18-α-glycyrrhetinic acid and oleamide (gap junctional intercellular channel inhibitors) group. The gap junction intercellular communication was determined by Parachute assay. The viability of astrocyes was detected by MTT assay. The apoptosis of astrocytes were detected with annexin V/PI and Hoechst 33258 staining. Compared with the normal control group, the gap junctional function of astrocytes was increased significantly in ischemia/reperfusion group (Pastrocytes decreased significantly (Pastrocytes in18-α-glycyrrhetinic acid and oleamide group decreased significantly (Pastrocytes increased significantly (Pastrocytes.

Hysteresis development in superconducting Josephson junctions

International Nuclear Information System (INIS)

Refai, T.F.; Shehata, L.N.

1988-09-01

The resistively and capacitive shunted junction model is used to investigate hysteresis development in superconducting Josephson junctions. Two empirical formulas that relate the hysteresis width and the quasi-particle diffusion length in terms of the junctions electrical parameters, temperature and frequency are obtained. The obtained formulas provide a simple tool to investigate the full potentials of the hysteresis phenomena. (author). 9 refs, 3 figs

Characterization of vertical GaN p–n diodes and junction field-effect transistors on bulk GaN down to cryogenic temperatures

International Nuclear Information System (INIS)

Kizilyalli, I C; Aktas, O

2015-01-01

There is great interest in wide-bandgap semiconductor devices and most recently in vertical GaN structures for power electronic applications such as power supplies, solar inverters and motor drives. In this paper the temperature-dependent electrical behavior of vertical GaN p–n diodes and vertical junction field-effect transistors fabricated on bulk GaN substrates of low defect density (10 4 to 10 6 cm −2 ) is described. Homoepitaxial MOCVD growth of GaN on its native substrate and the ability to control the doping in the drift layers in GaN have allowed the realization of vertical device architectures with drift layer thicknesses of 6 to 40 μm and net carrier electron concentrations as low as 1 × 10 15 cm −3 . This parameter range is suitable for applications requiring breakdown voltages of 1.2 kV to 5 kV. Mg, which is used as a p-type dopant in GaN, is a relatively deep acceptor (E A  ≈ 0.18 eV) and susceptible to freeze-out at temperatures below 200 K. The loss of holes in p-GaN has a deleterious effect on p–n junction behavior, p-GaN contacts and channel control in junction field-effect transistors at temperatures below 200 K. Impact ionization-based avalanche breakdown (BV > 1200 V) in GaN p–n junctions is characterized between 77 K and 423 K for the first time. At higher temperatures the p–n junction breakdown voltage improves due to increased phonon scattering. A positive temperature coefficient in the breakdown voltage is demonstrated down to 77 K; however, the device breakdown characteristics are not as abrupt at temperatures below 200 K. On the other hand, contact resistance to p-GaN is reduced dramatically above room temperature, improving the overall device performance in GaN p–n diodes in all cases except where the n-type drift region resistance dominates the total forward resistance. In this case, the electron mobility can be deconvolved and is found to decrease with T −3/2 , consistent with a phonon scattering model. Also

Effect of Polylactic Acid-Degradable Film Mulch on Soil Temperature and Cotton Yield

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ZHANG Ni

2016-03-01

Full Text Available Concern on biodegradable plastic film is increasing because of pollution problems caused by the plastic films currently used. The objective of this field experiment is to evaluate the effect of two thicknesses of polyactic acid-degradable film on soil temperature and cotton yield. The results showed that small holes appeared in the polyactic acid-degradable film at 17~22 d after it was installed. Burst period appeared about 60 d after installation. Splits were observed in the polyactic acid-degradable film at 130 d after installation. Soil temperatures rose slowly under polyactic acid-degradable film during the cotton seedling stage. Daytime soil temperatures were 0.8℃ and 6.2℃ lower under 18μm and 15μm thick polyactic acid-degradable film than non-degradable plastic film(CK, respectively. Nighttime soil temperatures under the polyactic acid-degradable film were about 1℃ warmer than CK. There was no significant difference in cotton yields between the 18μm polyactic acid degradable film treatment and CK. In contrast, yields in the 15μm degradable plastic film treatment were 8.9% less than that in CK. This study indicated that 18μm polyactic acid degradable plastic film had good degradability and no negative effect on cotton growth. The 18μm polyactic acid degradable plastic film can replace ordinary plastic film in agricultural production.

Bias voltage induced resistance switching effect in single-molecule magnets’ tunneling junction

Science.gov (United States)

Zhang, Zhengzhong; Jiang, Liang

2014-09-01

An electric-pulse-induced reversible resistance change effect in a molecular magnetic tunneling junction, consisting of a single-molecule magnet (SMM) sandwiched in one nonmagnetic and one ferromagnetic electrode, is theoretically investigated. By applying a time-varying bias voltage, the SMM's spin orientation can be manipulated with large bias voltage pulses. Moreover, the different magnetic configuration at high-resistance/low-resistance states can be ‘read out’ by utilizing relative low bias voltage. This device scheme can be implemented with current technologies (Khajetoorians et al 2013 Science 339 55) and has potential application in molecular spintronics and high-density nonvolatile memory devices.

Bias voltage induced resistance switching effect in single-molecule magnets' tunneling junction.

Science.gov (United States)

Zhang, Zhengzhong; Jiang, Liang

2014-09-12

An electric-pulse-induced reversible resistance change effect in a molecular magnetic tunneling junction, consisting of a single-molecule magnet (SMM) sandwiched in one nonmagnetic and one ferromagnetic electrode, is theoretically investigated. By applying a time-varying bias voltage, the SMM's spin orientation can be manipulated with large bias voltage pulses. Moreover, the different magnetic configuration at high-resistance/low-resistance states can be 'read out' by utilizing relative low bias voltage. This device scheme can be implemented with current technologies (Khajetoorians et al 2013 Science 339 55) and has potential application in molecular spintronics and high-density nonvolatile memory devices.

Synergetic effect of alkaline earth metal oxides and iron oxides on the degradation of hexachlorobenzene and its degradation pathway.

Science.gov (United States)

Su, Guijin; Liu, Yexuan; Huang, Linyan; Shi, Yali; Zhang, Aiqian; Zhang, Lixia; Liu, Wenbin; Gao, Lirong; Zheng, Minghui

2013-01-01

The degradation of hexachlorobenzene (HCB) was carried out over physical mixtures of a series of alkaline earth metal oxides (MO: M=Mg, Ca, Sr, Ba) and iron oxides with different crystal types (Fe(x)O(y):Fe(2)O(3) or Fe(3)O(4)) at 300°C. These physical mixtures all showed a synergetic effect toward the degradation of HCB. A range of degradation products were identified by various methods, including tri- to penta-chlorobenzenes by gas chromatography/mass spectrometry (GC-MS), tri- to penta-chlorophenols, tetrachlorocatechol (TCC) and tetrachlorohydroquinone (TCHQ) by GC-MS after derivatization, and formic and acetic acids by ion chromatography. Two degradation pathways, hydrodechlorination and oxidative degradation, appear to occur competitively. However, more sequential chlorinated benzene and phenol congeners were formed over mixed MO/Fe(3)O(4) than over mixed MO/Fe(2)O(3) under the same conditions. The oxidative reaction dominated over mixed MO/Fe(2)O(3) and was promoted as the major reaction by the synergetic effect, while both the oxidative and hydrodechlorination reactions were important over mixed MO/Fe(3)O(4), and both pathways are remarkably promoted by the synergetic effect. The enhanced hydrodechlorination may be attributed to free electrons generated by the transformation of Fe(3)O(4) into Fe(2)O(3), and hydrogen provided by water adsorbed on the MO. Copyright © 2012 Elsevier Ltd. All rights reserved.

Study on effects of turbulence promoter on fluid mixing in T-junction piping system

International Nuclear Information System (INIS)

Nagao, Akihiro; Hibara, Hideki; Ochi, Junji; Muramatsu, Toshiharu

2004-07-01

Flows in T-junction piping system with turbulence promoter have been investigated experimentally using flow visualization techniques (the dye injection method) and velocity measurement by LDV. Effects of turbulent promoter on characteristics of fluid mixing and thermal-striping phenomena are examined. From the experiment, following results are obtained. (1) Arch vortex is formed further than the case without promoter in the upstream station and is rapidly transported to the downstream direction. (2) Secondary flow induced in the cross section become stronger and the diffusion of axial momentum is promoted, as the height of turbulence promoter is higher. (3) Main flow deflects towards to the opposite side of branch pipe at the T-junction, as the height of turbulence promoter is higher, and as velocity ratio becomes smaller, and the flow continues to deflect to a considerably downstream station. (4) Velocity fluctuation is observed in the position where the vortex is formed, and it becomes a maximum at z/Dm=2. In the further downstream, velocity fluctuation decreases with the vortex breakdown, and it considerably remains to the downstream. (author)

Effect of exciton pairing on the stationary Josephson current in superconductor-semimetal-superconductor junctions

International Nuclear Information System (INIS)

Itskovich, I.F.; Shekhter, R.I.

1983-01-01

The effect of exciton pairing of charge carriers in a semimetal on the stationary Josephson current in superconductor-semimetal-superconductor junctions is considered. It is shown that the phase transition of the semimetal interlayer into an exciton dielectric state for T/sub γ/< T/sub c/ (T/sub γ/, T/sub c/ are the superconducting and exciton transition temperatures, respectively) is accompanied by a kink on the critical current j/sub c/ versus temperature curve at the point T = T/sub γ/. A sharp nonmonotonic temperature dependence of the reduced current j/sub c//j/sub c/0 (j/sub c/0 is the critical current at T/sub γ/ = 0) is also possible in the range T< T/sub γ/. At low temperatures T<< v/sub 1,2//d<< T/sub γ/ (v/sub 1,2/ are the Fermi velocities of the carriers in the semimetal, d is the thickness of the interlayer) the critical current of the superconductor-semimetal-superconductor junction is exponentially smaller than the current in the absence of exciton pairing

Fabrication of Josephson Junction without shadow evaporation

Science.gov (United States)

Wu, Xian; Ku, Hsiangsheng; Long, Junling; Pappas, David

We developed a new method of fabricating Josephson Junction (Al/AlOX/Al) without shadow evaporation. Statistics from room temperature junction resistance and measurement of qubits are presented. Unlike the traditional ``Dolan Bridge'' technique, this method requires two individual lithographies and straight evaporations of Al. Argon RF plasma is used to remove native AlOX after the first evaporation, followed by oxidation and second Al evaporation. Junction resistance measured at room temperature shows linear dependence on Pox (oxidation pressure), √{tox} (oxidation time), and inverse proportional to junction area. We have seen 100% yield of qubits made with this method. This method is promising because it eliminates angle dependence during Junction fabrication, facilitates large scale qubits fabrication.

Pronounced Environmental Effects on Injection Currents in EGaIn Tunneling Junctions Comprising Self-Assembled Monolayers.

Science.gov (United States)

Carlotti, Marco; Degen, Maarten; Zhang, Yanxi; Chiechi, Ryan C

2016-09-15

Large-area tunneling junctions using eutectic Ga-In (EGaIn) as a top contact have proven to be a robust, reproducible, and technologically relevant platform for molecular electronics. Thus far, the majority of studies have focused on saturated molecules with backbones consisting mainly of alkanes in which the frontier orbitals are either highly localized or energetically inaccessible. We show that self-assembled monolayers of wire-like oligophenyleneethynylenes (OPEs), which are fully conjugated, only exhibit length-dependent tunneling behavior in a low-O 2 environment. We attribute this unexpected behavior to the sensitivity of injection current on environment. We conclude that, contrary to previous reports, the self-limiting layer of Ga 2 O 3 strongly influences transport properties and that the effect is related to the wetting behavior of the electrode. This result sheds light on the nature of the electrode-molecule interface and suggests that adhesive forces play a significant role in tunneling charge-transport in large-area molecular junctions.

Microfluidic mixing in a Y-junction open channel

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Jue Nee Tan

2012-09-01

Full Text Available In the laminar regimes typical of microfluidic systems’, mixing is governed by molecular diffusion; however this process is slow in nature. Consequently, passive or active methods are usually sought for effective mixing. In this work, open fluidic channels will be investigated; these channels are bounded on all but one face by an air/fluid interface. Firstly, it will be shown that flow in open channels can merge at a Y-junction in a stable manner; hence two fluids can be brought into contact with each other. Secondly, the mixing of these two fluids will be studied. At high flow rates (>300 μl/min mixing occurs at the junction without need for additional intervention, this mixing is far swifter than can be expected from molecular diffusion. At lower flow rates, intervention is required. A major motivation for open fluidic channels is the ability to interact with the surrounding air environment; this feature is used to effect the desired mixing. It is shown that by blowing an air jet across the junction, shear stresses at the air/fluid interface causes a flow profile within the fluid inductive to rapid mixing of the fluids.

SOAPsplice: genome-wide ab initio detection of splice junctions from RNA-Seq data

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Songbo eHuang

2011-07-01

Full Text Available RNA-Seq, a method using next generation sequencing technologies to sequence the transcriptome, facilitates genome-wide analysis of splice junction sites. In this paper, we introduce SOAPsplice, a robust tool to detect splice junctions using RNA-Seq data without using any information of known splice junctions. SOAPsplice uses a novel two-step approach consisting of first identifying as many reasonable splice junction candidates as possible, and then, filtering the false positives with two effective filtering strategies. In both simulated and real datasets, SOAPsplice is able to detect many reliable splice junctions with low false positive rate. The improvement gained by SOAPsplice, when compared to other existing tools, becomes more obvious when the depth of sequencing is low. SOAPsplice is freely available at http://soap.genomics.org.cn/soapsplice.html.

Giant electroresistance of super-tetragonal BiFeO3-based ferroelectric tunnel junctions.

Science.gov (United States)

Yamada, Hiroyuki; Garcia, Vincent; Fusil, Stéphane; Boyn, Sören; Marinova, Maya; Gloter, Alexandre; Xavier, Stéphane; Grollier, Julie; Jacquet, Eric; Carrétéro, Cécile; Deranlot, Cyrile; Bibes, Manuel; Barthélémy, Agnès

2013-06-25

Ferroelectric tunnel junctions enable a nondestructive readout of the ferroelectric state via a change of resistance induced by switching the ferroelectric polarization. We fabricated submicrometer solid-state ferroelectric tunnel junctions based on a recently discovered polymorph of BiFeO3 with giant axial ratio ("T-phase"). Applying voltage pulses to the junctions leads to the highest resistance changes (OFF/ON ratio >10,000) ever reported with ferroelectric tunnel junctions. Along with the good retention properties, this giant effect reinforces the interest in nonvolatile memories based on ferroelectric tunnel junctions. We also show that the changes in resistance scale with the nucleation and growth of ferroelectric domains in the ultrathin BiFeO3 (imaged by piezoresponse force microscopy), thereby suggesting potential as multilevel memory cells and memristors.

Sidewall GaAs tunnel junctions fabricated using molecular layer epitaxy

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Takeo Ohno and Yutaka Oyama

2012-01-01

Full Text Available In this article we review the fundamental properties and applications of sidewall GaAs tunnel junctions. Heavily impurity-doped GaAs epitaxial layers were prepared using molecular layer epitaxy (MLE, in which intermittent injections of precursors in ultrahigh vacuum were applied, and sidewall tunnel junctions were fabricated using a combination of device mesa wet etching of the GaAs MLE layer and low-temperature area-selective regrowth. The fabricated tunnel junctions on the GaAs sidewall with normal mesa orientation showed a record peak current density of 35 000 A cm-2. They can potentially be used as terahertz devices such as a tunnel injection transit time effect diode or an ideal static induction transistor.

Using ion irradiation to make high-Tc Josephson junctions

International Nuclear Information System (INIS)

Bergeal, N.; Lesueur, J.; Sirena, M.; Faini, G.; Aprili, M.; Contour, J. P.; Leridon, B.

2007-01-01

In this article we describe the effect of ion irradiation on high-T c superconductor thin film and its interest for the fabrication of Josephson junctions. In particular, we show that these alternative techniques allow to go beyond most of the limitations encountered in standard junction fabrication methods, both in the case of fundamental and technological purposes. Two different geometries are presented: a planar one using a single high-T c film and a mesa one defined in a trilayer structure

Tanshinone IIA increases the bystander effect of herpes simplex virus thymidine kinase/ganciclovir gene therapy via enhanced gap junctional intercellular communication.

Directory of Open Access Journals (Sweden)

Jianyong Xiao

Full Text Available The bystander effect is an intriguing phenomenon by which adjacent cells become sensitized to drug treatment during gene therapy with herpes simplex virus thymidine kinase/ganciclovir (HSV-tk/GCV. This effect is reported to be mediated by gap junctional intercellular communication (GJIC, and therefore, we postulated that upregulation of genes that facilitate GJIC may enhance the HSV-tk/GCV bystander effect. Previous findings have shown Tanshinone IIA (Tan IIA, a chemical substance derived from a Chinese medicine herb, promotes the upregulation of the connexins Cx26 and Cx43 in B16 cells. Because gap junctions are formed by connexins, we hypothesized that Tan IIA might increase GJIC. Our results show that Tan IIA increased GJIC in B16 melanoma cells, leading to more efficient GCV-induced bystander killing in cells stably expressing HSV-tk. Additionally, in vivo experiments demonstrated that tumors in mice with 10% HSV-tk positive B16 cells and 90% wild-type B16 cells became smaller following treatment with the combination of GCV and Tan IIA as compared to GCV or Tan IIA alone. These data demonstrate that Tan IIA can augment the bystander effect of HSV-tk/GCV system through increased gap junction coupling, which adds strength to the promising strategy that develops connexins inducer to potentiate the effects of suicide gene therapy.

Entropy Flow Through Near-Critical Quantum Junctions

Science.gov (United States)

Friedan, Daniel

2017-05-01

This is the continuation of Friedan (J Stat Phys, 2017. doi: 10.1007/s10955-017-1752-8). Elementary formulas are derived for the flow of entropy through a circuit junction in a near-critical quantum circuit close to equilibrium, based on the structure of the energy-momentum tensor at the junction. The entropic admittance of a near-critical junction in a bulk-critical circuit is expressed in terms of commutators of the chiral entropy currents. The entropic admittance at low frequency, divided by the frequency, gives the change of the junction entropy with temperature—the entropic "capacitance". As an example, and as a check on the formalism, the entropic admittance is calculated explicitly for junctions in bulk-critical quantum Ising circuits (free fermions, massless in the bulk), in terms of the reflection matrix of the junction. The half-bit of information capacity per end of critical Ising wire is re-derived by integrating the entropic "capacitance" with respect to temperature, from T=0 to T=∞.

Ballistic Josephson junctions based on CVD graphene

Science.gov (United States)

Li, Tianyi; Gallop, John; Hao, Ling; Romans, Edward

2018-04-01

Josephson junctions with graphene as the weak link between superconductors have been intensely studied in recent years, with respect to both fundamental physics and potential applications. However, most of the previous work was based on mechanically exfoliated graphene, which is not compatible with wafer-scale production. To overcome this limitation, we have used graphene grown by chemical vapour deposition (CVD) as the weak link of Josephson junctions. We demonstrate that very short, wide CVD-graphene-based Josephson junctions with Nb electrodes can work without any undesirable hysteresis in their electrical characteristics from 1.5 K down to a base temperature of 320 mK, and their gate-tuneable critical current shows an ideal Fraunhofer-like interference pattern in a perpendicular magnetic field. Furthermore, for our shortest junctions (50 nm in length), we find that the normal state resistance oscillates with the gate voltage, consistent with the junctions being in the ballistic regime, a feature not previously observed in CVD-graphene-based Josephson junctions.

Gas selectivity of SILAR grown CdS nano-bulk junction

Science.gov (United States)

Jayakrishnan, R.; Nair, Varun G.; Anand, Akhil M.; Venugopal, Meera

2018-03-01

Nano-particles of cadmium sulphide were deposited on cleaned copper substrate by an automated sequential ionic layer adsorption reaction (SILAR) system. The grown nano-bulk junction exhibits Schottky diode behavior. The response of the nano-bulk junction was investigated under oxygen and hydrogen atmospheric conditions. The gas response ratio was found to be 198% for Oxygen and 34% for Hydrogen at room temperature. An increase in the operating temperature of the nano-bulk junction resulted in a decrease in their gas response ratio. A logarithmic dependence on the oxygen partial pressure to the junction response was observed, indicating a Temkin isothermal behavior. Work function measurements using a Kelvin probe demonstrate that the exposure to an oxygen atmosphere fails to effectively separate the charges due to the built-in electric field at the interface. Based on the benefits like simple structure, ease of fabrication and response ratio the studied device is a promising candidate for gas detection applications.

Proximity effect and Andreev reflection in single-C{sub 60} junctions

Energy Technology Data Exchange (ETDEWEB)

Brand, Jonathan; Neel, Nicolas; Kroeger, Joerg [Institut fuer Physik, Technische Universitaet Ilmenau, D-98693 Ilmenau (Germany)

2016-07-01

Single C{sub 60} molecules deposited on an ultrathin oxide film on Nb(110) were investigated using a low-temperature scanning tunnelling microscope. Spectroscopy of the differential conductance (dI/dV) in the tunnelling range indicates proximity-induced superconductivity in junctions comprising the oxide layer as well as single C{sub 60} molecules. Andreev reflection is enhanced upon controlled fabrication of tip-surface contacts. With decreasing electrode separation the Bardeen-Cooper-Schrieffer energy gap gradually evolves into a zero-bias peak in dI/dV spectra reflecting the spectroscopic signature of Andreev reflection. The current-voltage characteristics of the tunnelling and contact junctions are well described by the Blonder-Tinkham-Klapwijk theory. Our spectroscopic data evidence the influence of the electrodes' atomic-scale structure on electron transport across normal metal-superconductor interfaces.

Quantum dynamics of a Josephson junction driven cavity mode system in the presence of voltage bias noise

Science.gov (United States)

Wang, Hui; Blencowe, M. P.; Armour, A. D.; Rimberg, A. J.

2017-09-01

We give a semiclassical analysis of the average photon number as well as photon number variance (Fano factor F ) for a Josephson junction (JJ) embedded microwave cavity system, where the JJ is subject to a fluctuating (i.e., noisy) bias voltage with finite dc average. Through the ac Josephson effect, the dc voltage bias drives the effectively nonlinear microwave cavity mode into an amplitude squeezed state (F Armour et al., Phys. Rev. Lett. 111, 247001 (2013), 10.1103/PhysRevLett.111.247001], but bias noise acts to degrade this squeezing. We find that the sensitivity of the Fano factor to bias voltage noise depends qualitatively on which stable fixed point regime the system is in for the corresponding classical nonlinear steady-state dynamics. Furthermore, we show that the impact of voltage bias noise is most significant when the cavity is excited to states with large average photon number.

Overlap junctions for high coherence superconducting qubits

Science.gov (United States)

Wu, X.; Long, J. L.; Ku, H. S.; Lake, R. E.; Bal, M.; Pappas, D. P.

2017-07-01

Fabrication of sub-micron Josephson junctions is demonstrated using standard processing techniques for high-coherence, superconducting qubits. These junctions are made in two separate lithography steps with normal-angle evaporation. Most significantly, this work demonstrates that it is possible to achieve high coherence with junctions formed on aluminum surfaces cleaned in situ by Ar plasma before junction oxidation. This method eliminates the angle-dependent shadow masks typically used for small junctions. Therefore, this is conducive to the implementation of typical methods for improving margins and yield using conventional CMOS processing. The current method uses electron-beam lithography and an additive process to define the top and bottom electrodes. Extension of this work to optical lithography and subtractive processes is discussed.

Surface-Enhanced Raman Scattering in Molecular Junctions.

Science.gov (United States)

Iwane, Madoka; Fujii, Shintaro; Kiguchi, Manabu

2017-08-18

Surface-enhanced Raman scattering (SERS) is a surface-sensitive vibrational spectroscopy that allows Raman spectroscopy on a single molecular scale. Here, we present a review of SERS from molecular junctions, in which a single molecule or molecules are made to have contact from the top to the bottom of metal surfaces. The molecular junctions are nice platforms for SERS as well as transport measurement. Electronic characterization based on the transport measurements of molecular junctions has been extensively studied for the development of miniaturized electronic devices. Simultaneous SERS and transport measurement of the molecular junctions allow both structural (geometrical) and electronic information on the single molecule scale. The improvement of SERS measurement on molecular junctions open the door toward new nanoscience and nanotechnology in molecular electronics.

Effects of feeding on luminal pH and morphology of the gastroesophageal junction of snakes.

Science.gov (United States)

Bessler, Scott M; Secor, Stephen M

2012-10-01

At the gastroesophageal junction, most vertebrates possess a functional lower esophageal sphincter (LES) which may serve to regulate the passage of liquids and food into the stomach and prevent the reflux of gastric contents into the esophagus. Snakes seemingly lack an LES and consume meals large enough to extend anteriorly from the stomach into the esophagus thereby providing the opportunity for the reflux of gastric juices. To explore whether snakes experience or can prevent gastric reflux, we examined post-feeding changes of luminal pH of the distal esophagus and stomach, the fine scale luminal pH profile at the gastroesophageal junction, and the morphology of the gastroesophageal junction for the Burmese python (Python molurus), the African brown house snake (Lamprophis fuliginosus), and the diamondback water snake (Nerodia rhombifer). For each species fasted, there was no distension of the gastroesophageal junction and only modest changes in luminal pH from the distal esophagus into the stomach. Feeding resulted in marked distension and changes in tissue morphology of the gastroesophageal junction. Simultaneously, there was a significant decrease in luminal pH of the distal esophagus for pythons and house snakes, and for all three species a steep gradient in luminal pH decreasing across a 3-cm span from the distal edge of the esophagus into the proximal edge of the stomach. The moderate acidification of the distal most portion of the esophagus for pythons and house snakes suggests that there is some anterior movement of gastric juices across the gastroesophageal junction. Given that this modest reflux of gastric fluid is localized to the most distal region of the esophagus, snakes are apparently able to prevent and protect against acid reflux in the absence of a functional LES. Copyright © 2012 Elsevier GmbH. All rights reserved.

Two-dimensional simulations of the superconducting proximity in superconductor-semiconductor junctions

Science.gov (United States)

Chua, Victor; Vissers, Michael; Law, Stephanie A.; Vishveshwara, Smitha; Eckstein, James N.

2015-03-01

We simulate the consequences of the superconducting proximity effect on the DC current response of a semiconductor-superconductor proximity device within the quasiclassical formalism in the diffusively disordered limit. The device is modeled on in-situ fabricated NS junctions of superconducting Nb films on metallic doped InAs films, with electrical terminals placed in an N-S-N T-junction configuration. Due to the non-collinear configuration of this three terminal device, a theoretical model based on coupled two dimensional spectral and distributional Usadel equations was constructed and numerically solved using Finite-Elements methods. In the regime of high junction conductance, our numerical results demonstrate strong temperature and spatial dependencies of the proximity induced modifications to spectral and transport properties. Such characteristics deviate strongly from usual tunnel junction behavior and aspects of this have been observed in prior experiments[arXiv:1402.6055].

Single-Molecule Photocurrent at a Metal-Molecule-Semiconductor Junction.

Science.gov (United States)

Vezzoli, Andrea; Brooke, Richard J; Higgins, Simon J; Schwarzacher, Walther; Nichols, Richard J

2017-11-08

We demonstrate here a new concept for a metal-molecule-semiconductor nanodevice employing Au and GaAs contacts that acts as a photodiode. Current-voltage traces for such junctions are recorded using a STM, and the "blinking" or "I(t)" method is used to record electrical behavior at the single-molecule level in the dark and under illumination, with both low and highly doped GaAs samples and with two different types of molecular bridge: nonconjugated pentanedithiol and the more conjugated 1,4-phenylene(dimethanethiol). Junctions with highly doped GaAs show poor rectification in the dark and a low photocurrent, while junctions with low doped GaAs show particularly high rectification ratios in the dark (>10 3 for a 1.5 V bias potential) and a high photocurrent in reverse bias. In low doped GaAs, the greater thickness of the depletion layer not only reduces the reverse bias leakage current, but also increases the volume that contributes to the photocurrent, an effect amplified by the point contact geometry of the junction. Furthermore, since photogenerated holes tunnel to the metal electrode assisted by the HOMO of the molecular bridge, the choice of the latter has a strong influence on both the steady state and transient metal-molecule-semiconductor photodiode response. The control of junction current via photogenerated charge carriers adds new functionality to single-molecule nanodevices.

Q factor and resonance amplitude of Josephson tunnel junctions

International Nuclear Information System (INIS)

Broom, R.F.; Wolf, P.

1977-01-01

The surface impedance of the superconducting films comprising the electrodes of Josephson tunnel junctions has been derived from the BCS theory in the extreme London limit. Expressions have been obtained for (i) the dependence of the penetration depth lambda on frequency and temperature, and (ii) the quality factor Q of the junction cavity, attributable to surface absorption in the electrodes. The effect of thin electrodes (t 9 or approx. = lambda) is also included in the calculations. Comparison of the calculated frequency dependence of lambda with resonance measurements on Pb-alloy and all-Nb tunnel junctions yields quite good agreement, indicating that the assumptions made in the theory are reasonable. Measurements of the (current) amplitude of the resonance peaks of the junctions have been compared with the values obtained from inclusion of the calculated Q in the theory by Kulik. In common with observations on microwave cavities by other workers, we find that a small residual conductivity must be added to the real part of the BCS value. With its inclusion, good agreement is found between calculation and experiment, within the range determined by the simplifying assumptions of Kulik's theory. From the results, we believe the calculation of Q to be reasonably accurate for the materials investigated. It is shown that the resonance amplitude of Josephson junctions can be calculated directly from the material constants and a knowledge of the residual conductivity

Contribution to the theoretical and experimental study of the electron-volt effect in N-P junctions; Contribution a l'etude theorique et experimentale de l'effet electronvoltaique dans les jonctions N-P

Energy Technology Data Exchange (ETDEWEB)

Nguyen Van, Dong [Commissariat a l' Energie Atomique, Saclay (France). Centre d' Etudes Nucleaires

1959-07-15

The proposed aim of this work is to study the behaviour of a semi-conducting junction under the action of {beta} radiation. These studies were directed on the one hand to direct conversion of the energy radiated by a radioactive source to electric energy usable by means of N-P junctions, and on the other hand to the kinetics of defects produced in the semi-conductor crystals by high energy {beta} rays. In the first part of this work, an attempt has been made to complete the earlier theories of the electron-volt effect in junctions by analysing the effect mathematically. This has led to a single equation containing the electrical and geometric parameters of the semi-conductor and of the junction, and the properties of the incident radiation. Apart from this, the diffusion current of the charge carriers created by the bombardment has been studied in more detail, taking into account all the factors which play a part in the expression of the efficiency of charge collection of a junction. In the second part, where experiments on the irradiation of N-P junctions have been carried out with a {sup 90}Sr-{sup 90}Y source, mention is made of the particular advantages of a gallium arsenide junction capable of operating at relatively high temperatures (in the region of 100 deg. C). The third part presents the study of defects created in a semi-conductor crystal by high-energy {beta} rays, according to the method of electron-volt effect. It is shown here that from a study of the degradation of the short-circuit current of the junction it may be possible to determine the recombination level and the probabilities of electron and hole capture, as from a study of the lifetime decay of minority carriers in a crystal of known type. Experiments on the bombardment of Ge junctions by 2 MeV electrons were performed with a Van de Graaff. Very clear anomalies of the electron-volt effect at 100 deg. K were observed. An attempt was made at interpretation of these anomalies in the junction

Primary Tunnel Junction Thermometry

International Nuclear Information System (INIS)

Pekola, Jukka P.; Holmqvist, Tommy; Meschke, Matthias

2008-01-01

We describe the concept and experimental demonstration of primary thermometry based on a four-probe measurement of a single tunnel junction embedded within four arrays of junctions. We show that in this configuration random sample specific and environment-related errors can be avoided. This method relates temperature directly to Boltzmann constant, which will form the basis of the definition of temperature and realization of official temperature scales in the future

Ginzburg–Landau theory of mesoscopic multi-band Josephson junctions

Energy Technology Data Exchange (ETDEWEB)

Romeo, F.; De Luca, R., E-mail: rdeluca@unisa.it

2017-05-15

Highlights: • We generalize, in the realm of the Ginzburg–Landau theory, the de Gennes matching-matrix method for the interface order parameters to describe the superconducting properties of multi-band mesoscopic Josephson junctions. • The results are in agreement with a microscopic treatment of nanobridge junctions. • Thermal stability of the nanobridge junction is discussed in connection with recent experiments on iron-based grain-boundary junctions. - Abstract: A Ginzburg–Landau theory for multi-band mesoscopic Josephson junctions has been developed. The theory, obtained by generalizing the de Gennes matching-matrix method for the interface order parameters, allows the study of the phase dynamics of various types of mesoscopic Josephson junctions. As a relevant application, we studied mesoscopic double-band junctions also in the presence of a superconducting nanobridge interstitial layer. The results are in agreement with a microscopic treatment of the same system. Furthermore, thermal stability of the nanobridge junction is discussed in connection with recent experiments on iron-based grain-boundary junctions.

Spatio-temporal effects in a perturbed Sine-Gordan system: A long Josephson junction

International Nuclear Information System (INIS)

Nana, L.; Crepin Kofane, T.

2003-12-01

A collective coordinate approach is applied to study chaotic responses induced by an applied driven signal on the long Josephson junction influenced by a constant dc-driven field. We derive a nonlinear equation for a collective variable of the breather and the Melnikov method is then used to demonstrate the existence of irregular behavior in breather-fluxon-antifluxon pair transitions. Additionally, numerical simulations show that the theoretical predictions are well reproduced. Results obtained using these perturbative analysis are in good agreement with numerical simulations of the dynamics of the junction. (author)

The influence of junction conformation on RNA cleavage by the hairpin ribozyme in its natural junction form.

Science.gov (United States)

Thomson, J B; Lilley, D M

1999-01-01

In the natural form of the hairpin ribozyme the two loop-carrying duplexes that comprise the majority of essential bases for activity form two adjacent helical arms of a four-way RNA junction. In the present work we have manipulated the sequence around the junction in a way known to perturb the global folding properties. We find that replacement of the junction by a different sequence that has the same conformational properties as the natural sequence gives closely similar reaction rate and Arrhenius activation energy for the substrate cleavage reaction. By comparison, rotation of the natural sequence in order to alter the three-dimensional folding of the ribozyme leads to a tenfold reduction in the kinetics of cleavage. Replacement with the U1 four-way junction that is resistant to rotation into the antiparallel structure required to allow interaction between the loops also gives a tenfold reduction in cleavage rate. The results indicate that the conformation of the junction has a major influence on the catalytic activity of the ribozyme. The results are all consistent with a role for the junction in the provision of a framework by which the loops are presented for interaction in order to create the active form of the ribozyme. PMID:10024170

Design of thin InGaAsN(Sb) n-i-p junctions for use in four-junction concentrating photovoltaic devices

Science.gov (United States)

Wilkins, Matthew M.; Gupta, James; Jaouad, Abdelatif; Bouzazi, Boussairi; Fafard, Simon; Boucherif, Abderraouf; Valdivia, Christopher E.; Arès, Richard; Aimez, Vincent; Schriemer, Henry P.; Hinzer, Karin

2017-04-01

Four-junction solar cells for space and terrestrial applications require a junction with a band gap of ˜1 eV for optimal performance. InGaAsN or InGaAsN(Sb) dilute nitride junctions have been demonstrated for this purpose, but in achieving the 14 mA/cm2 short-circuit current needed to match typical GaInP and GaAs junctions, the open-circuit voltage (VOC) and fill factor of these junctions are compromised. In multijunction devices incorporating materials with short diffusion lengths, we study the use of thin junctions to minimize sensitivity to varying material quality and ensure adequate transmission into lower junctions. An n-i-p device with 0.65-μm absorber thickness has sufficient short-circuit current, however, it relies less heavily on field-aided collection than a device with a 1-μm absorber. Our standard cell fabrication process, which includes a rapid thermal anneal of the contacts, yields a significant improvement in diffusion length and device performance. By optimizing a four-junction cell around a smaller 1-sun short-circuit current of 12.5 mA/cm2, we produced an InGaAsN(Sb) junction with open-circuit voltage of 0.44 V at 1000 suns (1 sun=100 mW/cm2), diode ideality factor of 1.4, and sufficient light transmission to allow >12.5 mA/cm2 in all four subcells.

Harmonic synchronization in resistively coupled Josephson junctions

International Nuclear Information System (INIS)

Blackburn, J.A.; Gronbech-Jensen, N.; Smith, H.J.T.

1994-01-01

The oscillations of two resistively coupled Josephson junctions biased only by a single dc current source are shown to lock harmonically in a 1:2 mode over a significant range of bias current, even when the junctions are identical. The dependence of this locking on both junction and coupling parameters is examined, and it is found that, for this particular two-junction configuration, 1:1 locking can never occur, and also that a minimum coupling coefficient is needed to support harmonic locking. Some issues related to subharmonic locking are also discussed

Magnetoresistance of galfenol-based magnetic tunnel junction

Energy Technology Data Exchange (ETDEWEB)

Gobaut, B., E-mail: benoit.gobaut@elettra.eu [Sincrotrone Trieste S.C.p.A., S.S. 14 Km 163.5, Area Science Park, 34149 Trieste (Italy); Vinai, G.; Castán-Guerrero, C.; Krizmancic, D.; Panaccione, G.; Torelli, P. [Laboratorio TASC, IOM-CNR, S.S. 14km 163.5, Basovizza, 34149 Trieste (Italy); Rafaqat, H. [Laboratorio TASC, IOM-CNR, S.S. 14km 163.5, Basovizza, 34149 Trieste (Italy); ICTP, Trieste (Italy); Roddaro, S. [Laboratorio TASC, IOM-CNR, S.S. 14km 163.5, Basovizza, 34149 Trieste (Italy); NEST, Scuola Normale Superiore and Istituto Nanoscienze-CNR, Piazza S. Silvestro 12, 56127 Pisa (Italy); Rossi, G. [Laboratorio TASC, IOM-CNR, S.S. 14km 163.5, Basovizza, 34149 Trieste (Italy); Dipartimento di Fisica, Università di Milano, via Celoria 16, 20133 Milano (Italy); Eddrief, M.; Marangolo, M. [Sorbonne Universités, UPMC Paris 06, CNRS-UMR 7588, Institut des Nanosciences de Paris, 75005, Paris (France)

2015-12-15

The manipulation of ferromagnetic layer magnetization via electrical pulse is driving an intense research due to the important applications that this result will have on memory devices and sensors. In this study we realized a magnetotunnel junction in which one layer is made of Galfenol (Fe{sub 1-x}Ga{sub x}) which possesses one of the highest magnetostrictive coefficient known. The multilayer stack has been grown by molecular beam epitaxy and e-beam evaporation. Optical lithography and physical etching have been combined to obtain 20x20 micron sized pillars. The obtained structures show tunneling conductivity across the junction and a tunnel magnetoresistance (TMR) effect of up to 11.5% in amplitude.

Deviation of a Jet at a T junction at low Reynolds number

Science.gov (United States)

Panizza, Pascal; Engl, Wilfried; Ohata, Kouske; Colin, Annie

2006-03-01

We study the hydrodynamic behaviour of a laminar jet flowing through a channel when it reaches a junction. We observe the existence of two possible flow regimes, namely the splitting and deviation of a jet in the most simple microfluidic configuration, namely a T junction. The transition between the two regimes is not monitored by the shape of the T junction nor by capillary effects, but can be easily anticipated in terms of the hydrodynamic properties of the flow. We present a simple hydrodynamic model which is in very good agreement with observed experimental jet behaviour. The transition between both regime acts as a flow or viscosity comparator. We show how this effect can be used for the design of digital and integrated microfluidic devices

T-junction cross-flow mixing with thermally driven density stratification

Energy Technology Data Exchange (ETDEWEB)

Kickhofel, John, E-mail: jkickhofel@gmail.com [Laboratory of Nuclear Energy Systems, ETH Zurich, Sonneggstrasse 3, 8057 Zurich (Switzerland); Prasser, Horst-Michael, E-mail: prasser@lke.mavt.ethz.ch [Laboratory of Nuclear Energy Systems, ETH Zurich, Sonneggstrasse 3, 8057 Zurich (Switzerland); Selvam, P. Karthick, E-mail: karthick.selvam@ike.uni-stuttgart.de [Institute of Nuclear Technology and Energy Systems (IKE), University of Stuttgart, Pfaffenwaldring 31, 70569 Stuttgart (Germany); Laurien, Eckart, E-mail: eckart.laurien@ike.uni-stuttgart.de [Institute of Nuclear Technology and Energy Systems (IKE), University of Stuttgart, Pfaffenwaldring 31, 70569 Stuttgart (Germany); Kulenovic, Rudi, E-mail: rudi.kulenovic@ike.uni-stuttgart.de [Institute of Nuclear Technology and Energy Systems (IKE), University of Stuttgart, Pfaffenwaldring 31, 70569 Stuttgart (Germany)

2016-12-01

Highlights: • Mesh sensor for realistic nuclear thermal hydraulic scenarios is demonstrated. • Flow temperature behavior across a wide range of Richardson numbers measured. • Upstream stratified flow in the T-junction results in a thermal shock scenario. • Large, stable near-wall thermal gradients exist in spite of turbulent flows. - Abstract: As a means of further elucidating turbulence- and stratification-driven thermal fatigue in the vicinity of T-junctions in nuclear power plants, a series of experiments have been conducted at the high temperature high pressure fluid–structure interaction T-junction facility of the University of Stuttgart with novel fluid measurement instrumentation. T-junction mixing with large fluid temperature gradients results in complex flow behavior, the result of density driven effects. Deionized water mixing at temperature differences of up to 232 K at 7 MPa pressure have been investigated in a T-junction with main pipe diameter 71.8 mm and branch line diameter 38.9 mm. The experiments have been performed with fixed flow rates of 0.4 kg/s in the main pipe and 0.1 kg/s in the branch line. A novel electrode-mesh sensor compatible with the DN80 PN100 pipeline upstream and downstream of the T-junction has been utilized as a temperature sensor providing a high density information in the pipe cross-section in both space and time. Additionally, in-flow and in-wall thermocouples quantify the damping of thermal fluctuations by the wall material. The results indicate that large inflow temperature differences lead to strong turbulence damping, and ultimately stable stratification extending both downstream and upstream of the T-junction resulting in large local thermal gradients.

The effect of operational parameters on the photocatalytic degradation of pesticide.

Science.gov (United States)

Choi, Euiso; Cho, Il-Hyoung; Park, Jaehong

2004-01-01

The photocatalytic degradation of Cartap Hydrochloride, a synthetic pesticide. has been investigated over coated TiO2 photocatalysts irradiated with a ultraviolet (UV) light. The effect of operational parameters, i.e., Cartap Hydrochloride concentration, reaction time, light intensity and additive on the degradation rate of aqueous solution of Cartap Hydrochloride has been examined. Results show that the employment of efficient photocatalysts and the selection of optimal operational parameters may lead to degradation of Cartap Hydrochloride solutions.

Ultrasonic Degradation of Fuchsin Basic in Aqueous Solution: Effects of Operating Parameters and Additives

Directory of Open Access Journals (Sweden)

Rui-Jia Lan

2013-01-01

Full Text Available Ultrasonic degradation is one of the recent advanced oxidation processes (AOPs and proven to be effective for removing low-concentration organic pollutants from aqueous solutions. In this study, removal of fuchsin basic from aqueous solutions by ultrasound was investigated. The effects of operating parameters such as ultrasound power (200 W–500 W, initial pH (3–6.5, and temperature (15, 22, 35, and 60°C on the ultrasonic degradation were studied. The degradation of fuchsin under ultrasound irradiation basic was found to obey pseudo first-order reaction kinetics. Addition of catalyst Fe(II had a markedly positive effect on degradation. 84.1% extent of degradation was achieved at initial dye concentration 10 μmol L−1, ultrasound power 400 W, ultrasound frequency 25 kHz, dosage of Fe(II 4 mg L−1, initial pH 6.5, and temperature 22°C. But addition of heterogeneous catalyst TiO2 affected degradation slightly. Addition of radical scavenger suppressed fuchsin basic degradation significantly.

Sputter fabricated Nb-oxide-Nb josephson junctions incorporating post-oxidation noble metal layers

International Nuclear Information System (INIS)

Bain, R.J.P.; Donaldson, G.B.

1985-01-01

We present an extension, involving other metals, of the work of Hawkins and Clarke, who found that a thin layer of copper prevented the formation of the superconductive shorts which are an inevitable consequence of sputtering niobium counter-electrodes directly on top of niobium oxide. We find gold to be the most satisfactory, and that 0.3 nm is sufficient to guarantee short-free junctions of excellent electrical and mechanical stability, though high excess conductance means they are best suited to shunted-junction applications, as in SQUIDs. We present results for critical current dependence on oxide thickness and on gold thickness. Our data shows that thermal oxide growth is described by the Cabrera-Mott mechanism. We show that the protective effect of the gold layer can be understood in terms of the electro-chemistry of the Nb-oxide-Au structure, and that the reduced quasi-particle resistance of the junctions relative to goldfree junctions with evaporated counterelectrodes can be explained in terms of barrier shape modification, and not by proximity effect mechanisms. The performance of a DC SQUID based on these junctions is described

Supramolecular Systems and Chemical Reactions in Single-Molecule Break Junctions.

Science.gov (United States)

Li, Xiaohui; Hu, Duan; Tan, Zhibing; Bai, Jie; Xiao, Zongyuan; Yang, Yang; Shi, Jia; Hong, Wenjing

2017-04-01

The major challenges of molecular electronics are the understanding and manipulation of the electron transport through the single-molecule junction. With the single-molecule break junction techniques, including scanning tunneling microscope break junction technique and mechanically controllable break junction technique, the charge transport through various single-molecule and supramolecular junctions has been studied during the dynamic fabrication and continuous characterization of molecular junctions. This review starts from the charge transport characterization of supramolecular junctions through a variety of noncovalent interactions, such as hydrogen bond, π-π interaction, and electrostatic force. We further review the recent progress in constructing highly conductive molecular junctions via chemical reactions, the response of molecular junctions to external stimuli, as well as the application of break junction techniques in controlling and monitoring chemical reactions in situ. We suggest that beyond the measurement of single molecular conductance, the single-molecule break junction techniques provide a promising access to study molecular assembly and chemical reactions at the single-molecule scale.

Stereolithographic printing of ionically-crosslinked alginate hydrogels for degradable biomaterials and microfluidics.

Science.gov (United States)

Valentin, Thomas M; Leggett, Susan E; Chen, Po-Yen; Sodhi, Jaskiranjeet K; Stephens, Lauren H; McClintock, Hayley D; Sim, Jea Yun; Wong, Ian Y

2017-10-11

3D printed biomaterials with spatial and temporal functionality could enable interfacial manipulation of fluid flows and motile cells. However, such dynamic biomaterials are challenging to implement since they must be responsive to multiple, biocompatible stimuli. Here, we show stereolithographic printing of hydrogels using noncovalent (ionic) crosslinking, which enables reversible patterning with controlled degradation. We demonstrate this approach using sodium alginate, photoacid generators and various combinations of divalent cation salts, which can be used to tune the hydrogel degradation kinetics, pattern fidelity, and mechanical properties. This approach is first utilized to template perfusable microfluidic channels within a second encapsulating hydrogel for T-junction and gradient devices. The presence and degradation of printed alginate microstructures were further verified to have minimal toxicity on epithelial cells. Degradable alginate barriers were used to direct collective cell migration from different initial geometries, revealing differences in front speed and leader cell formation. Overall, this demonstration of light-based 3D printing using non-covalent crosslinking may enable adaptive and stimuli-responsive biomaterials, which could be utilized for bio-inspired sensing, actuation, drug delivery, and tissue engineering.

Dielectric properties of biological tissues in which cells are connected by communicating junctions

International Nuclear Information System (INIS)

Asami, Koji

2007-01-01

The frequency dependence of the complex permittivity of biological tissues has been simulated using a simple model that is a cubic array of spherical cells in a parallel plate capacitor. The cells are connected by two types of communicating junctions: one is a membrane-lined channel for plasmodesmata in plant tissues, and the other is a conducting patch of adjoining plasma membranes for gap junctions in animal tissues. Both junctions provided similar effects on the dielectric properties of the tissue model. The model without junction showed a dielectric relaxation (called β-dispersion) that was expected from an interfacial polarization theory for a concentrated suspension of spherical cells. The dielectric relaxation was the same as that of the model in which neighbouring cells were connected by junctions perpendicular to the applied electric field. When neighbouring cells were connected by junctions parallel to the applied electric field or in all directions, a dielectric relaxation appeared at a lower frequency side in addition to the β-dispersion, corresponding to the so called α-dispersion. When junctions were randomly introduced at varied probabilities P j , the low-frequency (LF) relaxation curve became broader, especially at P j of 0.2-0.5, and its intensity was proportional to P j up to 0.7. The intensity and the characteristic frequency of the LF relaxation both decreased with decreasing junction conductance. The simulations indicate that communicating junctions are important for understanding the LF dielectric relaxation in tissues

Dielectric properties of biological tissues in which cells are connected by communicating junctions

Science.gov (United States)

Asami, Koji

2007-06-01

The frequency dependence of the complex permittivity of biological tissues has been simulated using a simple model that is a cubic array of spherical cells in a parallel plate capacitor. The cells are connected by two types of communicating junctions: one is a membrane-lined channel for plasmodesmata in plant tissues, and the other is a conducting patch of adjoining plasma membranes for gap junctions in animal tissues. Both junctions provided similar effects on the dielectric properties of the tissue model. The model without junction showed a dielectric relaxation (called β-dispersion) that was expected from an interfacial polarization theory for a concentrated suspension of spherical cells. The dielectric relaxation was the same as that of the model in which neighbouring cells were connected by junctions perpendicular to the applied electric field. When neighbouring cells were connected by junctions parallel to the applied electric field or in all directions, a dielectric relaxation appeared at a lower frequency side in addition to the β-dispersion, corresponding to the so called α-dispersion. When junctions were randomly introduced at varied probabilities Pj, the low-frequency (LF) relaxation curve became broader, especially at Pj of 0.2-0.5, and its intensity was proportional to Pj up to 0.7. The intensity and the characteristic frequency of the LF relaxation both decreased with decreasing junction conductance. The simulations indicate that communicating junctions are important for understanding the LF dielectric relaxation in tissues.

Experimental Evidence for Quantum Interference and Vibrationally Induced Decoherence in Single-Molecule Junctions

Science.gov (United States)

Ballmann, Stefan; Härtle, Rainer; Coto, Pedro B.; Elbing, Mark; Mayor, Marcel; Bryce, Martin R.; Thoss, Michael; Weber, Heiko B.

2012-08-01

We analyze quantum interference and decoherence effects in single-molecule junctions both experimentally and theoretically by means of the mechanically controlled break junction technique and density-functional theory. We consider the case where interference is provided by overlapping quasidegenerate states. Decoherence mechanisms arising from electronic-vibrational coupling strongly affect the electrical current flowing through a single-molecule contact and can be controlled by temperature variation. Our findings underline the universal relevance of vibrations for understanding charge transport through molecular junctions.

Terbinafine inhibits gap junctional intercellular communication

Energy Technology Data Exchange (ETDEWEB)

Lee, Ju Yeun, E-mail: whitewndus@naver.com [College of Pharmacy, Yonsei Institute of Pharmaceutical Sciences, Yonsei University, 85 Songdogwahak-ro, Yeonsu-gu, Incheon 21983 (Korea, Republic of); Yoon, Sei Mee, E-mail: sei_mee@naver.com [College of Pharmacy, Yonsei Institute of Pharmaceutical Sciences, Yonsei University, 85 Songdogwahak-ro, Yeonsu-gu, Incheon 21983 (Korea, Republic of); Department of Integrated OMICS for Biomedical Sciences, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 120-749 (Korea, Republic of); Choi, Eun Ju, E-mail: yureas@naver.com [College of Pharmacy, Yonsei Institute of Pharmaceutical Sciences, Yonsei University, 85 Songdogwahak-ro, Yeonsu-gu, Incheon 21983 (Korea, Republic of); Lee, Jinu, E-mail: jinulee@yonsei.ac.kr [College of Pharmacy, Yonsei Institute of Pharmaceutical Sciences, Yonsei University, 85 Songdogwahak-ro, Yeonsu-gu, Incheon 21983 (Korea, Republic of)

2016-09-15

Terbinafine is an antifungal agent that selectively inhibits fungal sterol synthesis by blocking squalene epoxidase. We evaluated the effect of terbinafine on gap junctional intercellular communication (GJIC). Fluorescence recovery after photobleaching (FRAP) and I-YFP GJIC assays revealed that terbinafine inhibits GJIC in a reversible and dose-dependent manner in FRT-Cx43 and LN215 cells. Treatment with terbinafine did not affect Cx43 phosphorylation status or intracellular Ca{sup 2+} concentration, well-known action mechanisms of various GJIC blockers. While a structurally related chemical, naftifine, attenuated GJIC, epigallocatechin gallate, another potent squalene epoxidase inhibitor with a different structure, did not. These results suggest that terbinafine inhibits GJIC with a so far unknown mechanism of action. - Highlights: • In vitro pharmacological studies were performed on FRT-Cx43 and LN215 cells. • Terbinafine inhibits gap junctional intercellular communication in both cell lines. • The inhibitory effect of terbinafine is reversible and dose-dependent. • Treatment of terbinafine does not alter Cx43 phosphorylation or cytosolic Ca{sup 2+} concentration. • Inhibition of squalene epoxidase is not involved in this new effect of terbinafine.

Molecular Diffusion through Cyanobacterial Septal Junctions.

Science.gov (United States)

Nieves-Morión, Mercedes; Mullineaux, Conrad W; Flores, Enrique

2017-01-03

Heterocyst-forming cyanobacteria grow as filaments in which intercellular molecular exchange takes place. During the differentiation of N 2 -fixing heterocysts, regulators are transferred between cells. In the diazotrophic filament, vegetative cells that fix CO 2 through oxygenic photosynthesis provide the heterocysts with reduced carbon and heterocysts provide the vegetative cells with fixed nitrogen. Intercellular molecular transfer has been traced with fluorescent markers, including calcein, 5-carboxyfluorescein, and the sucrose analogue esculin, which are observed to move down their concentration gradient. In this work, we used fluorescence recovery after photobleaching (FRAP) assays in the model heterocyst-forming cyanobacterium Anabaena sp. strain PCC 7120 to measure the temperature dependence of intercellular transfer of fluorescent markers. We find that the transfer rate constants are directly proportional to the absolute temperature. This indicates that the "septal junctions" (formerly known as "microplasmodesmata") linking the cells in the filament allow molecular exchange by simple diffusion, without any activated intermediate state. This constitutes a novel mechanism for molecular transfer across the bacterial cytoplasmic membrane, in addition to previously characterized mechanisms for active transport and facilitated diffusion. Cyanobacterial septal junctions are functionally analogous to the gap junctions of metazoans. Although bacteria are frequently considered just as unicellular organisms, there are bacteria that behave as true multicellular organisms. The heterocyst-forming cyanobacteria grow as filaments in which cells communicate. Intercellular molecular exchange is thought to be mediated by septal junctions. Here, we show that intercellular transfer of fluorescent markers in the cyanobacterial filament has the physical properties of simple diffusion. Thus, cyanobacterial septal junctions are functionally analogous to metazoan gap junctions

Rectification of harmonically oscillating magnetic fields in quarter circular Josephson junctions

International Nuclear Information System (INIS)

Shaju, P.D.; Kuriakose, V.C.

2003-01-01

A novel method for rectifying harmonically varying magnetic fields is demonstrated using fluxons in quarter circular Josephson junctions (JJs). A JJ with a quarter circular geometry terminated with a load resistor at one end is found to be capable of rectifying alternating fields when biased with a constant dc current. An external magnetic field applied parallel to the dielectric barrier of the junction interacts with the edges of the junction and make asymmetric boundary conditions. These asymmetric boundary conditions facilitate fluxon penetration under a dc bias from one end of the junction in alternate half cycles of the applied field. Thus effective rectification of the field can be achieved using quarter circular JJs. This unique phenomenon is specific to this geometry and can be exploited for making superconducting magnetic field rectifiers. This proposed device is expected to have important applications in millimeter and sub-millimeter radio wave astronomy

Effect of d-wave pairing symmetry in transport properties of silicene-based superconductor junction

Science.gov (United States)

Vosoughi-nia, S.; Rashedi, G.; hajati, Y.

2018-06-01

We theoretically study the tunneling conductance of a normal/d-wave superconductor silicene junction using Blonder-Tinkham-Klapwijk (BTK) formalism. We discuss how the conductance spectra are affected by changing the chemical potential (μN) in the normal silicene region. It is obtained that the amplitude of the spin/valley-dependent Andreev reflection (AR) and charge conductance (G) of the junction can be strongly modulated by the orientation angle of superconductive gap (β) and perpendicular electric field (Ez). We demonstrate that the charge conductance exhibits an oscillatory behavior as a function of β by a period of π/2. Remarkably, variation of μN strongly modifies the amplitude of the oscillations and periodically there are transport gaps in the G - β oscillations for a range of μN. These findings suggest that one may experimentally tune the transport properties of the junction through changing β, Ez and μN.

Non-genotoxic carcinogens: early effects on gap junctions, cell proliferation and apoptosis in the rat

International Nuclear Information System (INIS)

Mally, Angela; Chipman, James Kevin

2002-01-01

Non-genotoxic carcinogens are thought to induce tumour formation by disturbing the balance between cell growth and cell death. Gap junctions (GJ) contribute to the maintenance of tissue homeostasis by allowing the intercellular exchange of growth regulatory signals and potential inhibition of GJ intercellular communication through loss of connexin (Cx) plaques has been shown to be involved in the cancer process. We have investigated the time- and dose-dependent effects of the non-genotoxic hepatocarcinogens Wy-14,643, 2,3,7,8-tetrachlorodibenzo-p-dioxin, methapyrilene and hexachlorobenzene and the male rat kidney carcinogens chloroform, p-dichlorobenzene and d-limonene on gap junction plaque expression in relation to proliferation and apoptosis. With the exception of limonene, all non-genotoxic carcinogens significantly reduced the expression of GJ plaques containing Cx32 in their respective target tissue. No dose-dependent, significant effects were seen in non-target organs. Although alteration of Cx32 expression did not appear to correlate with induction of cell proliferation, out data suggest that the interaction of both processes--interference of GJ coupled with a proliferative stimulus (at the carcinogenic dose)--may be important in non-genotoxic carcinogenesis and provide a potential alert for non-genotoxic carcinogens in short-term toxicity tests

Characteristics of domain wall chirality and propagation in a Y-junction nanowire

Energy Technology Data Exchange (ETDEWEB)

Kwak, W.-Y.; Yoon, Seungha; Kwon, J.-H. [School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), Gwangju 61005 (Korea, Republic of); Grünberg, P. [Gruenberg Center for Magnetic Nanomaterials, Gwangju Institute of Science and Technology (GIST), Gwangju 61005 (Korea, Republic of); Cho, B. K., E-mail: chobk@gist.ac.kr [School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), Gwangju 61005 (Korea, Republic of); Gruenberg Center for Magnetic Nanomaterials, Gwangju Institute of Science and Technology (GIST), Gwangju 61005 (Korea, Republic of)

2016-01-14

Chirality-dependent propagation of transverse wall along a nanowire was investigated using a Y-junction with spin-valve structure. It was found that the Y-junction can be used for convenient and effective electric detection of transverse domain wall chirality, especially in a nanowire with sub-200 nm width, where it is difficult to electrically detect chirality using conventional artificial defect, such as a notch, due to small resistance change. Domain wall propagation path in the Y-junction was found to be determined by the wall chirality, whether clockwise or counterclockwise. Using the Y-junction nanowire, characteristics of domain wall chirality that was nucleated in a nucleation pad, attached at the end of a nanowire, were studied and found to be in good agreement with the results of theoretical simulation.

Josephson tunnel junctions in niobium films

International Nuclear Information System (INIS)

Wiik, Tapio.

1976-12-01

A method of fabricating stable Josephson tunnel junctions with reproducible characteristics is described. The junctions have a sandwich structure consisting of a vacuum evaporated niobium film, a niobium oxide layer produced by the glow discharge method and a lead film deposited by vacuum evaporation. Difficulties in producing thin-film Josephson junctions are discussed. Experimental results suggest that the lower critical field of the niobium film is the most essential parameter when evaluating the quality of these junctions. The dependence of the lower critical field on the film thickness and on the Ginzburg-Landau parameter of the film is studied analytically. Comparison with the properties of the evaporated films and with the previous calculations for bulk specimens shows that the presented model is applicable for most of the prepared samples. (author)

Humidity dependence of molecular tunnel junctions with an AlOx/COOH- interface

Science.gov (United States)

Zhang, Xiaohang; McGill, Stephen; Xiong, Peng

2006-03-01

We have studied the electron transport in planar tunneling junctions with aluminum oxide and an organic self-assembled monolayer (SAM) as the tunnel barrier. The structure of the junctions is Al/AlOx/SAM/(Au, Pb) with a junction area of ˜ 0.4mm^2. The organic molecules investigated include mercaptohexadecanoic acid (MHA), hexadecanoic acid (HDA), and octadecyltrichlorosilane (OTS); all of which form ordered SAMs on top of aluminum oxide. The use of a superconducting electrode (Al) enables us to determine unambiguously that these are high-quality tunnel junctions. For junctions incorporating MHA, the transport behavior is found to be strongly humidity dependent. The resistance of these junctions drops more than 50% when placed in dry nitrogen and recovers when returned into the ambient. The same drop also occurs when the sample is placed into a vacuum, and backfilling the vacuum with either dry N2 or O2 has negligible effect on the resistance. For comparison, junctions with HDA show the same humidity dependence, while OTS samples do not. Since both MHA and HDA have carboxylic groups and OTS does not, the results suggest that water molecules at the AlOx/COOH- interface play the central role in the observed behavior. Inelastic tunneling spectroscopy (IETS) has also been performed to understand the role of water. This work was supported by a FSU Research Foundation PEG grant.

Critical current of pure SNS junctions

International Nuclear Information System (INIS)

Golub, A.A.; Bezzub, O.P.

1982-01-01

Boundary conditions at the superconductor-normal metal interface are determined, taking into account the differences in the effective masses and the density of states of the metals constituting the transition and assumed to be pure. The potential barrier of the interface is chosen to be zero. The critical current of the junction is calculated [ru

dc properties of series-parallel arrays of Josephson junctions in an external magnetic field

International Nuclear Information System (INIS)

Lewandowski, S.J.

1991-01-01

A detailed dc theory of superconducting multijunction interferometers has previously been developed by several authors for the case of parallel junction arrays. The theory is now extended to cover the case of a loop containing several junctions connected in series. The problem is closely associated with high-T c superconductors and their clusters of intrinsic Josephson junctions. These materials exhibit spontaneous interferometric effects, and there is no reason to assume that the intrinsic junctions form only parallel arrays. A simple formalism of phase states is developed in order to express the superconducting phase differences across the junctions forming a series array as functions of the phase difference across the weakest junction of the system, and to relate the differences in critical currents of the junctions to gaps in the allowed ranges of their phase functions. This formalism is used to investigate the energy states of the array, which in the case of different junctions are split and separated by energy barriers of height depending on the phase gaps. Modifications of the washboard model of a single junction are shown. Next a superconducting inductive loop containing a series array of two junctions is considered, and this model is used to demonstrate the transitions between phase states and the associated instabilities. Finally, the critical current of a parallel connection of two series arrays is analyzed and shown to be a multivalued function of the externally applied magnetic flux. The instabilities caused by the presence of intrinsic serial junctions in granular high-T c materials are pointed out as a potential source of additional noise

HYS-32, a novel analogue of combretastatin A-4, enhances connexin43 expression and gap junction intercellular communication in rat astrocytes.

Science.gov (United States)

Lin, Pei-Chun; Shen, Chien-Chang; Liao, Chih-Kai; Jow, Guey-Mei; Chiu, Chi-Ting; Chung, Tun-Hui; Wu, Jiahn-Chun

2013-05-01

HYS-32 [4-(3,4-dimethoxyphenyl)-3-(naphthalen-2-yl)-2(5H)-furanone] is a new analogue of the anti-tumor compound combretastatin A-4 containing a cis-stilbene moiety. In this study, we investigated its effects on Cx43 gap junction intercellular communication (GJIC) and the signaling pathway involved in rat primary astrocytes. Western blot analyses showed that HYS-32 dose- and time-dependently upregulated Cx43 expression. A confocal microscopic study and scrape-loading/dye transfer analyses demonstrated that HYS-32 (5μM) induced microtubule coiling, accumulation of Cx43 in gap junction plaques, and increased GJIC in astrocytes. The HYS-32-induced microtubule coiling and Cx43 accumulation in gap junction plaques was reversed when HYS-32 was removed. Treatment of astrocytes with cycloheximide resulted in time-dependent degradation of by co-treatment with HYS-32 by increasing the half-life of Cx43. Co-treatment with HYS-32 also prevented the LPS-induced downregulation of Cx43 and inhibition of GJIC in astrocytes. HYS-32 induced activation of PKC, ERK, and JNK, and co-treatment with the PKC inhibitor Go6976 or the ERK inhibitor PD98059, but not the JNK inhibitor SP600125, prevented the HYS-32-induced increase in Cx43 expression and GJIC. Go6976 suppressed the HYS-32-induced PKC phosphorylation and increase in phospho-ERK levels, while PD98059 did not prevent the HYS-32-induced increase in phospho-PKC levels, suggesting that PKC is an upstream effector of ERK. In conclusion, our results show that HYS-32 increases the half-life of Cx43 and enhances Cx43 expression and GJIC in astrocytes via a PKC-ERK signaling cascade. These novel biological effects of HYS-32 on astrocyte gap junctions support its potential for therapeutic use as a protective agent for the central nervous system. Copyright © 2013 Elsevier Ltd. All rights reserved.

Molecular series-tunneling junctions.

Science.gov (United States)

Liao, Kung-Ching; Hsu, Liang-Yan; Bowers, Carleen M; Rabitz, Herschel; Whitesides, George M

2015-05-13

Charge transport through junctions consisting of insulating molecular units is a quantum phenomenon that cannot be described adequately by classical circuit laws. This paper explores tunneling current densities in self-assembled monolayer (SAM)-based junctions with the structure Ag(TS)/O2C-R1-R2-H//Ga2O3/EGaIn, where Ag(TS) is template-stripped silver and EGaIn is the eutectic alloy of gallium and indium; R1 and R2 refer to two classes of insulating molecular units-(CH2)n and (C6H4)m-that are connected in series and have different tunneling decay constants in the Simmons equation. These junctions can be analyzed as a form of series-tunneling junctions based on the observation that permuting the order of R1 and R2 in the junction does not alter the overall rate of charge transport. By using the Ag/O2C interface, this system decouples the highest occupied molecular orbital (HOMO, which is localized on the carboxylate group) from strong interactions with the R1 and R2 units. The differences in rates of tunneling are thus determined by the electronic structure of the groups R1 and R2; these differences are not influenced by the order of R1 and R2 in the SAM. In an electrical potential model that rationalizes this observation, R1 and R2 contribute independently to the height of the barrier. This model explicitly assumes that contributions to rates of tunneling from the Ag(TS)/O2C and H//Ga2O3 interfaces are constant across the series examined. The current density of these series-tunneling junctions can be described by J(V) = J0(V) exp(-β1d1 - β2d2), where J(V) is the current density (A/cm(2)) at applied voltage V and βi and di are the parameters describing the attenuation of the tunneling current through a rectangular tunneling barrier, with width d and a height related to the attenuation factor β.

Phase transition in a modified square Josephson-junction array

CERN Document Server

Han, J

1999-01-01

We study the phase transition in a modified square proximity-coupled Josephson-junction array with small superconducting islands at the center of each plaquette. We find that the modified square array undergoes a Kosterlitz-Thouless-Berezinskii-like phase transition, but at a lower temperature than the simple square array with the same single-junction critical current. The IV characteristics, as well as the phase transition, resemble qualitatively those of a disordered simple square array. The effects of the presence of the center islands in the modified square array are discussed.

Niobium nitride Josephson junctions with silicon and germanium barriers

International Nuclear Information System (INIS)

Cukauskas, E.J.; Carter, W.L.

1988-01-01

Niobium nitride based junctions with silicon, germanium, and composite silicon/germanium barriers were fabricated and characterized for several barrier compositions. The current-voltage characteristics were analyzed at several temperatures using the Simmons model and numerical integration of the WKB approximation for the average barrier height and effective thickness. The zero voltage conductance was measured from 1.5 K to 300 K and compared to the Mott hopping conductivity model and the Stratton tunneling temperature dependence. Conductivity followed Mott conductivity at temperatures above 60 K for junctions with less than 100 angstrom thick barriers

Inertia effects on bubble generation in thin T-junction microchannel

Science.gov (United States)

Sugiyama, Kazuyasu; Okubo, Hidehiko; Nabeshima, Seigo; Watamura, Tomoaki

2016-11-01

A numerical study on gas-liquid interface dynamics of bubble generation in a thin microchannel with a squeezed T-junction is performed. In consideration of liquid inertia, the basic equations consist of the Laplace law and the two-dimensional Euler-Darcy equation under the assumption of Hele-Shaw's flow owing to a large width-to-thickness aspect ratio of the channel cross-section. The velocity potential and the interface motion are numerically predicted by means of a boundary element method. The simulated results reasonably capture the experimentally observed behaviors that the interface pinches off at the channel junction and then a bubble forms. For a fixed liquid velocity, the generated bubble is likely to be smaller with decreasing the gas pressure, but the bubble is no longer generated at the gas pressure below a threshold. The bubble size minimized at the generation limit is arranged using the capillary, Reynolds and Weber numbers, and the results imply the significance of the liquid inertia in the bubble generation process in spite of the micrometer-scale phenomena.

Performance of single-junction and dual-junction InGaP/GaAs solar cells under low concentration ratios

International Nuclear Information System (INIS)

Khan, Aurangzeb; Yamaguchi, Masafumi; Takamoto, Tatsuya

2004-01-01

A study of the performance of single-junction InGaP/GaAs and dual-junction InGaP/GaAs tandem cells under low concentration ratios (up to 15 suns), before and after 1 MeV electron irradiation is presented. Analysis of the tunnel junction parameters under different concentrated light illuminations reveals that the peak current (J P ) and valley current (J V ) densities should be greater than the short-circuit current density (J sc ) for better performance. The tunnel junction behavior against light intensity improved after irradiation. This led to the suggestion that the peak current density (J P ) and valley current density (J V ) of the tunnel junction were enhanced after irradiation or the peak current was shifted to higher concentration. The recovery of the radiation damage under concentrated light illumination conditions suggests that the performance of the InGaP/GaAs tandem solar cell can be enhanced even under low concentration ratios

Current noise in tunnel junctions

Energy Technology Data Exchange (ETDEWEB)

Frey, Moritz; Grabert, Hermann [Physikalisches Institut, Universitaet Freiburg, Hermann-Herder-Strasse 3, 79104, Freiburg (Germany)

2017-06-15

We study current fluctuations in tunnel junctions driven by a voltage source. The voltage is applied to the tunneling element via an impedance providing an electromagnetic environment of the junction. We use circuit theory to relate the fluctuations of the current flowing in the leads of the junction with the voltage fluctuations generated by the environmental impedance and the fluctuations of the tunneling current. The spectrum of current fluctuations is found to consist of three parts: a term arising from the environmental Johnson-Nyquist noise, a term due to the shot noise of the tunneling current and a third term describing the cross-correlation between these two noise sources. Our phenomenological theory reproduces previous results based on the Hamiltonian model for the dynamical Coulomb blockade and provides a simple understanding of the current fluctuation spectrum in terms of circuit theory and properties of the average current. Specific results are given for a tunnel junction driven through a resonator. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Realization of φ Josephson junctions with a ferromagnetic interlayer

International Nuclear Information System (INIS)

Sickinger, Hanna Sabine

2014-01-01

In this thesis, φ Josephson junctions based on 0-π junctions with a ferromagnetic interlayer are studied. Josephson junctions (JJs) with a ferromagnetic interlayer can have a phase drop of 0 or π in the ground state, depending on the thickness of the ferromagnet (0 JJs or π JJs). Also, 0-π JJs can be realized, where one segment of the junction (if taken separately) is in the 0 state, while the other segment is in the π state. One can use these π Josephson junctions as a device in superconducting circuits, where it provides a constant phase shift, i.e., it acts as a π phase battery. A generalization of a π JJ is a φ JJ, which has the phase ±φ in the ground state. The value of φ can be chosen by design and tuned in the interval 0<φ<π. The φ JJs used in this experiment were fabricated as 0-π JJs with asymmetric current densities in the 0 and π facets. This system can be described by an effective current-phase relation which is tunable by an externally applied magnetic field. The first experimental evidence of such a φ JJ is presented in this thesis. In particular it is demonstrated that (a) a φ JJ has two ground states +φ and -φ, (b) the unknown state can be detected (read out) by measuring the critical current I c (I c+ or I c- ), and (c) a particular state can be prepared by applying a magnetic field or a special bias sweep sequence. These properties of a φ JJ can be utilized, for example, as a memory cell (classical bit). Furthermore, a φ Josephson junction can be used as a deterministic ratchet. This is due to the tunable asymmetry of the potential that can be changed by the external magnetic field. Rectification curves are observed for the overdamped and the underdamped case. Moreover, experimental data of the retrapping process of the phase of a φ Josephson junction depending on the temperature is presented.

Progressive age-dependence and frequency difference in the effect of gap junctions on active cochlear amplification and hearing.

Science.gov (United States)

Zong, Liang; Chen, Jin; Zhu, Yan; Zhao, Hong-Bo

2017-07-22

Mutations of Connexin 26 (Cx26, GJB2), which is a predominant gap junction isoform in the cochlea, can induce high incidence of nonsyndromic hearing loss. We previously found that targeted-deletion of Cx26 in supporting Deiters cells and outer pillar cells in the cochlea can influence outer hair cell (OHC) electromotility and reduce active cochlear amplification leading to hearing loss, even though there are no gap junction connexin expressions in the auditory sensory hair cells. Here, we further report that hearing loss and the reduction of active amplification in the Cx26 targeted-deletion mice are progressive and different at high and low frequency regions, first occurring in the high frequency region and then progressively extending to the middle and low frequency regions with mouse age increased. The speed of hearing loss extending was fast in the basal high frequency region and slow in the apical low frequency region, showing a logarithmic function with mouse age. Before postnatal day 25, there were no significant hearing loss and the reduction of active cochlear amplification in the low frequency region. Hearing loss and the reduction of active cochlear amplification also had frequency difference, severe and large in the high frequency regions. These new data indicate that the effect of gap junction on active cochlear amplification is progressive, but, consistent with our previous report, exists in both high and low frequency regions in adulthood. These new data also suggest that cochlear gap junctions may have an important role in age-related hearing loss. Copyright © 2017 Elsevier Inc. All rights reserved.

Fractional flux quanta in Josephson junctions

Energy Technology Data Exchange (ETDEWEB)

Goldobin, E.; Buckenmaier, K.; Gaber, T.; Kemmler, M.; Pfeiffer, J.; Koelle, D.; Kleiner, R. [Physikalisches Inst. - Experimentalphysik II, Univ. Tuebingen (Germany); Weides, M.; Kohlstedt, H. [Center of Nanoelectronic Systems for Information Technology (CNI), Research Centre Juelich (Germany); Siegel, M. [Inst. fuer Mikro- und Nanoelektronische Systeme, Univ. Karlsruhe (Germany)

2007-07-01

Fractional Josephson vortices may appear in the so-called 0-{kappa} Josephson junctions ({kappa} is an arbitrary number) and carry magnetic flux {phi}, which is a fraction of the magnetic flux quantum {phi}{sub 0}{approx}2.07 x 10{sup -15} Wb. Their properties are very different from the usual integer fluxons: they are pinned, and often represent the ground state of the system with spontaneous circulating supercurrent. They behave as well controlled macroscopic spins and can be used to construct bits, qubits, tunable photonic crystals and to study the (quantum) physics of spin systems. In this talk we discuss recent advances in 0-{pi} junction technology and present recent experimental results: evidence of the spontaneous flux in the ground state, spectroscopy of the fractional vortex eigenfrequencies and observation of dynamics effects related to the flipping of the fractional vortices. (orig.)

Effects of organic degradation products on the sorption of actinides

International Nuclear Information System (INIS)

Baston, G.M.N.; Berry, J.A.; Bond, K.A.; Brownsword, M.; Linklater, C.M.

1992-01-01

Previous work has shown that products from the chemical degradation of cellulosic matter can significantly reduce sorption of uranium(VI) and plutonium(IV) on geological materials. Uranium(IV) batch sorption experiments have now been performed to study the effect of organic degradation products in a reducing environment. Thorium(IV) sorption has also been studied since thorium is an important radioelement in its own right and has potential use as a simulant for other tetravalent actinides. Sorption onto London clay, Caithness flagstones and St. Bees sandstone was investigated. Experimental conditions were chosen to simulate both those expected close to cementitious repository (pH ∝ 11) and at the edge of the zone of migration of the alkaline plume (pH ∝ 8). Work was carried out with both authentic degradation products and with gluconate, acting as a well-characterized simulant for cellulosic degradation products. The results show that the presence of organic species can cause a reduction in sorption. This is especially so in the presence of a high concentration of gluconate ions, but the reduction is significantly less with authentic degradation products. (orig.)

Vibrationally coupled electron transport through single-molecule junctions

Energy Technology Data Exchange (ETDEWEB)

Haertle, Rainer

2012-04-26

Single-molecule junctions are among the smallest electric circuits. They consist of a molecule that is bound to a left and a right electrode. With such a molecular nanocontact, the flow of electrical currents through a single molecule can be studied and controlled. Experiments on single-molecule junctions show that a single molecule carries electrical currents that can even be in the microampere regime. Thereby, a number of transport phenomena have been observed, such as, for example, diode- or transistor-like behavior, negative differential resistance and conductance switching. An objective of this field, which is commonly referred to as molecular electronics, is to relate these transport phenomena to the properties of the molecule in the contact. To this end, theoretical model calculations are employed, which facilitate an understanding of the underlying transport processes and mechanisms. Thereby, one has to take into account that molecules are flexible structures, which respond to a change of their charge state by a profound reorganization of their geometrical structure or may even dissociate. It is thus important to understand the interrelation between the vibrational degrees of freedom of a singlemolecule junction and the electrical current flowing through the contact. In this thesis, we investigate vibrational effects in electron transport through singlemolecule junctions. For these studies, we calculate and analyze transport characteristics of both generic and first-principles based model systems of a molecular contact. To this end, we employ a master equation and a nonequilibrium Green's function approach. Both methods are suitable to describe this nonequilibrium transport problem and treat the interactions of the tunneling electrons on the molecular bridge non-perturbatively. This is particularly important with respect to the vibrational degrees of freedom, which may strongly interact with the tunneling electrons. We show in detail that the resulting

Fractional Solitons in Excitonic Josephson Junctions

OpenAIRE

Hsu, Ya-Fen; Su, Jung-Jung

2015-01-01

The Josephson effect is especially appealing to physicists because it reveals macroscopically the quantum order and phase. In excitonic bilayers the effect is even subtler due to the counterflow of supercurrent as well as the tunneling between layers (interlayer tunneling). Here we study, in a quantum Hall bilayer, the excitonic Josephson junction: a conjunct of two exciton condensates with a relative phase ? 0 applied. The system is mapped into a pseudospin ferromagnet then described numeric...

Curved Josephson junction

International Nuclear Information System (INIS)

Dobrowolski, Tomasz

2012-01-01

The constant curvature one and quasi-one dimensional Josephson junction is considered. On the base of Maxwell equations, the sine–Gordon equation that describes an influence of curvature on the kink motion was obtained. It is showed that the method of geometrical reduction of the sine–Gordon model from three to lower dimensional manifold leads to an identical form of the sine–Gordon equation. - Highlights: ► The research on dynamics of the phase in a curved Josephson junction is performed. ► The geometrical reduction is applied to the sine–Gordon model. ► The results of geometrical reduction and the fundamental research are compared.

Josephson tunnel junctions with ferromagnetic interlayer

International Nuclear Information System (INIS)

Weides, M.P.

2006-01-01

Superconductivity and ferromagnetism are well-known physical properties of solid states that have been widely studied and long thought about as antagonistic phenomena due to difference in spin ordering. It turns out that the combination of both superconductor and ferromagnet leads to a very rich and interesting physics. One particular example, the phase oscillations of the superconducting order parameter inside the ferromagnet, will play a major role for the devices discussed in this work. In this thesis, I present Josephson junctions with a thin Al 2 O 3 tunnel barrier and a ferromagnetic interlayer, i.e. superconductor-insulator-ferromagnet-superconductor (SIFS) stacks. The fabrication of junctions was optimized regarding the insulation of electrodes and the homogeneity of the current transport. The junctions were either in the 0 or π coupled ground state, depending on the thickness of the ferromagnetic layer and on temperature. The influence of ferromagnetic layer thickness on the transport properties and the coupling (0, π) of SIFS tunnel junctions was studied. Furthermore, using a stepped ferromagnetic layer with well-chosen thicknesses, I obtained the so-called 0-π Josephson junction. At a certain temperature this 0-π junction can be made perfectly symmetric. In this case the ground state corresponds to a vortex of supercurrent creating a magnetic flux which is a fraction of the magnetic flux quantum Φ 0 . Such structures allow to study the physics of fractional vortices and to build various electronic circuits based on them. The SIFS junctions presented here have an exponentially vanishing damping at T → 0. The SIFS technology developed within the framework of this work may be used to construct classical and quantum devices such as oscillators, memory cells and qubits. (orig.)

Josephson tunnel junctions with ferromagnetic interlayer

Energy Technology Data Exchange (ETDEWEB)

Weides, M.P.

2006-07-01

Superconductivity and ferromagnetism are well-known physical properties of solid states that have been widely studied and long thought about as antagonistic phenomena due to difference in spin ordering. It turns out that the combination of both superconductor and ferromagnet leads to a very rich and interesting physics. One particular example, the phase oscillations of the superconducting order parameter inside the ferromagnet, will play a major role for the devices discussed in this work. In this thesis, I present Josephson junctions with a thin Al{sub 2}O{sub 3} tunnel barrier and a ferromagnetic interlayer, i.e. superconductor-insulator-ferromagnet-superconductor (SIFS) stacks. The fabrication of junctions was optimized regarding the insulation of electrodes and the homogeneity of the current transport. The junctions were either in the 0 or {pi} coupled ground state, depending on the thickness of the ferromagnetic layer and on temperature. The influence of ferromagnetic layer thickness on the transport properties and the coupling (0, {pi}) of SIFS tunnel junctions was studied. Furthermore, using a stepped ferromagnetic layer with well-chosen thicknesses, I obtained the so-called 0-{pi} Josephson junction. At a certain temperature this 0-{pi} junction can be made perfectly symmetric. In this case the ground state corresponds to a vortex of supercurrent creating a magnetic flux which is a fraction of the magnetic flux quantum {phi}{sub 0}. Such structures allow to study the physics of fractional vortices and to build various electronic circuits based on them. The SIFS junctions presented here have an exponentially vanishing damping at T {yields} 0. The SIFS technology developed within the framework of this work may be used to construct classical and quantum devices such as oscillators, memory cells and qubits. (orig.)

Electron transport in doped fullerene molecular junctions

Science.gov (United States)

Kaur, Milanpreet; Sawhney, Ravinder Singh; Engles, Derick

The effect of doping on the electron transport of molecular junctions is analyzed in this paper. The doped fullerene molecules are stringed to two semi-infinite gold electrodes and analyzed at equilibrium and nonequilibrium conditions of these device configurations. The contemplation is done using nonequilibrium Green’s function (NEGF)-density functional theory (DFT) to evaluate its density of states (DOS), transmission coefficient, molecular orbitals, electron density, charge transfer, current, and conductance. We conclude from the elucidated results that Au-C16Li4-Au and Au-C16Ne4-Au devices behave as an ordinary p-n junction diode and a Zener diode, respectively. Moreover, these doped fullerene molecules do not lose their metallic nature when sandwiched between the pair of gold electrodes.

Ginsenoside Rg1 alleviates corticosterone-induced dysfunction of gap junctions in astrocytes.

Science.gov (United States)

Xia, Cong-Yuan; Chu, Shi-Feng; Zhang, Shuai; Gao, Yan; Ren, Qian; Lou, Yu-Xia; Luo, Piao; Tian, Man-Tong; Wang, Zhi-Qi; Du, Guo-Hua; Tomioka, Yoshihisa; Yamakuni, Tohru; Zhang, Yi; Wang, Zhen-Zhen; Chen, Nai-Hong

2017-08-17

Ginsenoside Rg1 (Rg1), one of the major bioactive ingredients of Panax ginseng C. A. Mey, has neuroprotective effects in animal models of depression, but the mechanism underlying these effects is still largely unknown AIM OF THE STUDY: Gap junction intercellular communication (GJIC) dysfunction is a potentially novel pathogenic mechanism for depression. Thus, we investigated that whether antidepressant-like effects of Rg1 were related to GJIC. Primary rat prefrontal cortical and hippocampal astrocytes cultures were treated with 50μM CORT for 24h to induce gap junction damage. Rg1 (0.1, 1, or 10μM) or fluoxetine (1μM) was added 1h prior to CORT treatment. A scrape loading and dye transfer assay was performed to identify the functional capacity of gap junctions. Western blot was used to detect the expression and phosphorylation of connexin43 (Cx43), the major component of gap junctions. Treatment of primary astrocytes with CORT for 24h inhibited GJIC, decreased total Cx43 expression, and increased the phosphorylation of Cx43 at serine368 in a dose-dependent manner. Pre-treatment with 1μM and 10μM Rg1 significantly improved GJIC in CORT-treated astrocytes from the prefrontal cortex and hippocampus, respectively, and this was accompanied by upregulation of Cx43 expression and downregulation of Cx43 phosphorylation. These findings provide the first evidence indicating that Rg1 can alleviate CORT-induced gap junction dysfunction, which may have clinical significance in the treatment of depression. Copyright © 2017 Elsevier Ireland Ltd. All rights reserved.

Black Phosphorus-Zinc Oxide Nanomaterial Heterojunction for p-n Diode and Junction Field-Effect Transistor.

Science.gov (United States)

Jeon, Pyo Jin; Lee, Young Tack; Lim, June Yeong; Kim, Jin Sung; Hwang, Do Kyung; Im, Seongil

2016-02-10

Black phosphorus (BP) nanosheet is two-dimensional (2D) semiconductor with distinct band gap and attracting recent attention from researches because it has some similarity to gapless 2D semiconductor graphene in the following two aspects: single element (P) for its composition and quite high mobilities depending on its fabrication conditions. Apart from several electronic applications reported with BP nanosheet, here we report for the first time BP nanosheet-ZnO nanowire 2D-1D heterojunction applications for p-n diodes and BP-gated junction field effect transistors (JFETs) with n-ZnO channel on glass. For these nanodevices, we take advantages of the mechanical flexibility of p-type conducting of BP and van der Waals junction interface between BP and ZnO. As a result, our BP-ZnO nanodimension p-n diode displays a high ON/OFF ratio of ∼10(4) in static rectification and shows kilohertz dynamic rectification as well while ZnO nanowire channel JFET operations are nicely demonstrated by BP gate switching in both electrostatics and kilohertz dynamics.

Mechanically Stacked Dual-Junction and Triple-Junction III-V/Si-IBC Cells with Efficiencies Exceeding 31.5% and 35.4%: Preprint

Energy Technology Data Exchange (ETDEWEB)

Schnabel, Manuel [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Tamboli, Adele C [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Warren, Emily L [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Schulte-Huxel, Henning [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Klein, Talysa [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Van Hest, Marinus F [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Geisz, John F [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Stradins, Paul [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Steiner, Myles A [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Rienaecker, Michael [Institute for Solar Energy Research Hamelin (ISFH); Merkle, Agnes [Institute for Solar Energy Research Hamelin (ISFH); Kajari-Schroeder, S. [Institute for Solar Energy Research Hamelin (ISFH); Niepelt, Raphael [Institute for Solar Energy Research Hamelin (ISFH); Schmidt, Jan [Institute for Solar Energy Research Hamelin (ISFH); Leibniz Universitat Hannover; Brendel, Rolf [Institute for Solar Energy Research Hamelin (ISFH); Leibniz Universitat Hannover; Peibst, Robby [Institute for Solar Energy Research Hamelin (ISFH); Leibniz Universitat Hannover

2017-10-02

Despite steady advancements in the efficiency of crystalline Silicon (c-Si) photovoltaics (PV) within the last decades, the theoretical efficiency limit of 29.4 percent depicts an insurmountable barrier for silicon-based single-junction solar cells. Combining the Si cell with a second absorber material on top in a dual junction tandem or triple junction solar cell is an attractive option to surpass this limit significantly. We demonstrate a mechanically stacked GaInP/Si dual-junction cell with an in-house measured efficiency of 31.5 percent and a GaInP/GaAs/Si triple-junction cell with a certified efficiency of 35.4 percent.

A charge-based model of Junction Barrier Schottky rectifiers

Science.gov (United States)

Latorre-Rey, Alvaro D.; Mudholkar, Mihir; Quddus, Mohammed T.; Salih, Ali

2018-06-01

A new charge-based model of the electric field distribution for Junction Barrier Schottky (JBS) diodes is presented, based on the description of the charge-sharing effect between the vertical Schottky junction and the lateral pn-junctions that constitute the active cell of the device. In our model, the inherently 2-D problem is transformed into a simple but accurate 1-D problem which has a closed analytical solution that captures the reshaping and reduction of the electric field profile responsible for the improved electrical performance of these devices, while preserving physically meaningful expressions that depend on relevant device parameters. The validation of the model is performed by comparing calculated electric field profiles with drift-diffusion simulations of a JBS device showing good agreement. Even though other fully 2-D models already available provide higher accuracy, they lack physical insight making the proposed model an useful tool for device design.

Large thermoelectric efficiency of doped polythiophene junction: A density functional study

Science.gov (United States)

Golsanamlou, Zahra; Bagheri Tagani, Meysam; Rahimpour Soleimani, Hamid

2018-06-01

The thermoelectric properties of polythiophene (PT) coupled to the Au (111) electrodes are studied based on density functional theory with nonequilibrium Green function formalism. Specially, the effect of Li and Cl adsorbents on the thermoelectric efficiency of the PT junction is investigated in different concentrations of the dopants for two lengths of the PT. Results show that the presence of dopants can bring the structural changes in the oligomer and modify the arrangement of the molecular levels leading to the dramatic changes in the transmission spectra of the junction. Therefore, the large enhancement in thermopower and consequently figure of merit is obtained by dopants which makes the doped PT junction as a beneficial thermoelectric device.

Enhancing crude oil degradation in a sandy soil: Effects of addition ...

African Journals Online (AJOL)

This study investigated the effects of the addition of poultry manure alone and in combination with surfactant (Goldcrew or Corexit) and/or alternate carbon substrate (glucose or starch) on crude oil degradation in a sandy soil. With poultry manure alone, optimal crude oil degradation was obtained at a concentration of 4.0% ...

The effect of different electrodes on the electronic transmission of benzene junctions: Analytical approach

Energy Technology Data Exchange (ETDEWEB)

Mohebbi, Razie; Seyed-Yazdi, Jamileh, E-mail: j.seyedyazdi@vru.ac.ir

2016-06-01

In this paper we have investigated the electronic transmission of systems electrode–benzene–electrode using the Landauer approach. The effect of different electrodes made of metal (Au) and semiconductors (Si, TiO{sub 2}) is investigated. These three electrodes are compared between them and the results show that the electronic transmission of benzene junctions, when using semiconductor electrodes, is associated to a gap in transmission which is due to the electrodes band gap. As a consequence, a threshold voltage is necessary to obtain conducting channels.

TMR- and TAMR-effects of (Ga,Mn)As and GaAs tunnel junctions; TMR- und TAMR-Effekt an (Ga,Mn)As und GaAs Tunnelstrukturen

Energy Technology Data Exchange (ETDEWEB)

Brinkmeier, Eva

2009-07-30

This thesis is concerned with the experimental investigation of the tunnel magnetoresistance (TMR) and tunnel anistropic magnetoresistance (TAMR) in GaAs and (Ga,Mn)As tunnel junction. A special emphasis was put on the study of the newly discovered TAMR effect, which consists in the variation of the TMR with the magnetization's angle. The tunnel junctions were fabricated by means of optical lithography and wet chemical etching. The dependence of the TAMR effect on the layer system, the barrier thickness, the bias voltage, the temperature and the applied magnetic field magnitude was subsequently examined. The conducted measurements on (Ga,Mn)As junctions showed a TMR effect as well as various anisotropic effects which are in good agreement with the experimental reports published so far. The observed dependences of the TAMR effect on the aforementioned parameters were discussed within the framework of two distinct preexisting theoretical models and the experimental data could be explained by the superimposition of two effects stemming in one case from the spin orbit coupling in the (Ga,Mn)As layer and in the other from the concurrent action of the Rashba and Dresselhaus spin orbit interaction within the barrier. (orig.)

The effect of mechanical loads on the degradation of aliphatic biodegradable polyesters.

Science.gov (United States)

Li, Ying; Chu, Zhaowei; Li, Xiaoming; Ding, Xili; Guo, Meng; Zhao, Haoran; Yao, Jie; Wang, Lizhen; Cai, Qiang; Fan, Yubo

2017-06-01

Aliphatic biodegradable polyesters have been the most widely used synthetic polymers for developing biodegradable devices as alternatives for the currently used permanent medical devices. The performances during biodegradation process play crucial roles for final realization of their functions. Because physiological and biochemical environment in vivo significantly affects biodegradation process, large numbers of studies on effects of mechanical loads on the degradation of aliphatic biodegradable polyesters have been launched during last decades. In this review article, we discussed the mechanism of biodegradation and several different mechanical loads that have been reported to affect the biodegradation process. Other physiological and biochemical factors related to mechanical loads were also discussed. The mechanical load could change the conformational strain energy and morphology to weaken the stability of the polymer. Besides, the load and pattern could accelerate the loss of intrinsic mechanical properties of polymers. This indicated that investigations into effects of mechanical loads on the degradation should be indispensable. More combination condition of mechanical loads and multiple factors should be considered in order to keep the degradation rate controllable and evaluate the degradation process in vivo accurately. Only then can the degradable devise achieve the desired effects and further expand the special applications of aliphatic biodegradable polyesters.

Tunable Nitride Josephson Junctions.

Energy Technology Data Exchange (ETDEWEB)

Missert, Nancy A. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Henry, Michael David [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Lewis, Rupert M. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Howell, Stephen W. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Wolfley, Steven L. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Brunke, Lyle Brent [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Wolak, Matthaeus [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

2017-12-01

We have developed an ambient temperature, SiO₂/Si wafer - scale process for Josephson junctions based on Nb electrodes and Ta x N barriers with tunable electronic properties. The films are fabricated by magnetron sputtering. The electronic properties of the Ta_xN barriers are controlled by adjusting the nitrogen flow during sputtering. This technology offers a scalable alternative to the more traditional junctions based on AlO_x barriers for low - power, high - performance computing.

Theory of the low-voltage impedance of superconductor-- p insulator--normal metal tunnel junctions

International Nuclear Information System (INIS)

Lemberger, T.R.

1984-01-01

A theory for the low-voltage impedance of a superconductor-- p insulator--normal metal tunnel junction is developed that includes the effects of charge imbalance and of quasiparticle fluctuations. A novel, inelastic, charge-imbalance relaxation process is identified that is associated with the junction itself. This new process leads to the surprising result that the charge-imbalance component of the dc resistance of a junction becomes independent of the electron-phonon scattering rate as the insulator resistance decreases

Inter-band phase fluctuations in macroscopic quantum tunneling of multi-gap superconducting Josephson junctions

Energy Technology Data Exchange (ETDEWEB)

Asai, Hidehiro, E-mail: hd-asai@aist.go.jp [Electronics and Photonics Research Institute (ESPRIT), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568 (Japan); Ota, Yukihiro [CCSE, Japan Atomic Energy Agency, Kashiwa, Chiba 277-8587 (Japan); Kawabata, Shiro [Electronics and Photonics Research Institute (ESPRIT), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568 (Japan); Nori, Franco [CEMS, RIKEN, Wako-shi, Saitama 351-0198 (Japan); Physics Department, University of Michigan, Ann Arbor, MI 48109-1040 (United States)

2014-09-15

Highlights: • We study MQT in Josephson junctions composed of multi-gap superconductors. • We derive a formula of the MQT escape rate for multiple phase differences. • We investigate the effect of inter-band phase fluctuation on MQT. • The MQT escape rate is significantly enhanced by the inter-band phase fluctuation. - Abstract: We theoretically investigate macroscopic quantum tunneling (MQT) in a hetero Josephson junction formed by a conventional single-gap superconductor and a multi-gap superconductor. In such Josephson junctions, phase differences for each tunneling channel are defined, and the fluctuation of the relative phase differences appear which is referred to as Josephson–Leggett’s mode. We take into account the effect of the fluctuation in the tunneling process and calculate the MQT escape rate for various junction parameters. We show that the fluctuation of relative phase differences drastically enhances the escape rate.

Inter-band phase fluctuations in macroscopic quantum tunneling of multi-gap superconducting Josephson junctions

International Nuclear Information System (INIS)

Asai, Hidehiro; Ota, Yukihiro; Kawabata, Shiro; Nori, Franco

2014-01-01

Highlights: • We study MQT in Josephson junctions composed of multi-gap superconductors. • We derive a formula of the MQT escape rate for multiple phase differences. • We investigate the effect of inter-band phase fluctuation on MQT. • The MQT escape rate is significantly enhanced by the inter-band phase fluctuation. - Abstract: We theoretically investigate macroscopic quantum tunneling (MQT) in a hetero Josephson junction formed by a conventional single-gap superconductor and a multi-gap superconductor. In such Josephson junctions, phase differences for each tunneling channel are defined, and the fluctuation of the relative phase differences appear which is referred to as Josephson–Leggett’s mode. We take into account the effect of the fluctuation in the tunneling process and calculate the MQT escape rate for various junction parameters. We show that the fluctuation of relative phase differences drastically enhances the escape rate

Lift-off process for deep-submicron-size junctions using supercritical CO2

International Nuclear Information System (INIS)

Fukushima, A.; Kubota, H.; Yuasa, S.; Takahachi, T.; Kadoriku, S.; Miyake, K.

2007-01-01

Deep-submicron-size (∼100-nm-size) junctions are a key element to investigate spin-torque transfer phenomena such as current induced magnetization reversal or the spin-torque diode effect. In the fabrication of submicron-size junctions using an etching method, the lift-off process after the etching process tends to be difficult as the size of junctions shrinks. In this study, we present a new lift-off process using supercritical CO 2 . In this process, the samples were immersed in solvent (mixture of N-Methyl-2-pyrrolidone and isopropanol), and pressurized by CO 2 gas. The CO 2 gas then went into supercritical phase and the solvent was removed by a continuous flow of CO 2 . We obtained considerable yield rate (success ratio in lift-off process) of more than 50% for the samples down to 100-nm-size junctions

Effect of electrodeposition current density on the microstructure and the degradation of electroformed iron for degradable stents

Energy Technology Data Exchange (ETDEWEB)

Moravej, Maryam [Laboratory for Biomaterials and Bioengineering, Department of Mining, Metallurgy and Materials Engineering and University Hospital Research Center, Universite Laval, Quebec City, Que. G1V 0A6 (Canada); Department of Mining, Metallurgy and Materials Engineering, Pavillon Adrien-Pouliot, 1065 avenue de la Medecine, Local 1745-E, Universite Laval, Quebec City, Que. G1V 0A6 (Canada); Amira, Sofiene [Aluminium Technology Centre, Industrial Materials Institute, National Research Council Canada, 501, boul. de l' Universite Est, Saguenay, Que. G7H 8C3 (Canada); Prima, Frederic [Laboratory for Physical Metallurgy, Ecole Nationale Superieure de Chimie de Paris, Universite Pierre et Marie Curie, Paris 6 (France); Rahem, Ahmed [Aluminium Technology Centre, Industrial Materials Institute, National Research Council Canada, 501, boul. de l' Universite Est, Saguenay, Que. G7H 8C3 (Canada); Fiset, Michel [Department of Mining, Metallurgy and Materials Engineering, Pavillon Adrien-Pouliot, 1065 avenue de la Medecine, Local 1745-E, Universite Laval, Quebec City, Que. G1V 0A6 (Canada); and others

2011-12-15

Pure iron has become one of the most interesting candidate materials for degradable metallic stents due to its high mechanical properties and moderate degradation. In this work we studied the effect of electrodeposition current density on microstructure and degradation of pure iron films electrodeposited on Ti alloy substrate for degradable metallic stent application. Iron sheets were produced by electrodeposition using four different current densities 1, 2, 5 and 10 A dm{sup -2}. The films were then studied by SEM (scanning electron microscope) and EBSD (electron backscatter diffraction) to observe the surface morphology, grain size and orientation. Potentiodynamic polarization and static immersion tests were used to determine the corrosion rate and to study the degradation behavior of iron films, respectively. The current density was found to significantly influence the texture, the grain size and the grain shape of the electrodeposited iron. At current densities of 1, 5 and 10 A dm{sup -2}, weak textures corresponding to Left-Pointing-Angle-Bracket 1 0 1 Right-Pointing-Angle-Bracket , Left-Pointing-Angle-Bracket 1 1 1 Right-Pointing-Angle-Bracket and Left-Pointing-Angle-Bracket 1 1 2 Right-Pointing-Angle-Bracket in the normal (electrodeposition) direction were obtained, respectively. At these current densities, average grain sizes smaller than 3 {mu}m were also obtained. However, at 2 A dm{sup -2}, a strong Left-Pointing-Angle-Bracket 1 1 1 Right-Pointing-Angle-Bracket //ND texture with density of 7.4 MUD was obtained with larger average grain size of 4.4 {mu}m. The microstructure of iron samples changed after annealing at 550 Degree-Sign C because of the induced recrystallization. Different corrosion rates were obtained from potentiodynamic polarization curves of iron films deposited at different current densities because of their microstructures. Fe-2 showed the lowest corrosion rate due to its larger grains size and its texture. The corrosion rates of all

Contribution to the theoretical and experimental study of the electron-volt effect in N-P junctions; Contribution a l'etude theorique et experimentale de l'effet electronvoltaique dans les jonctions N-P

Energy Technology Data Exchange (ETDEWEB)

Nguyen Van, Dong [Commissariat a l' Energie Atomique, Saclay (France). Centre d' Etudes Nucleaires

1959-07-15

The proposed aim of this work is to study the behaviour of a semi-conducting junction under the action of {beta} radiation. These studies were directed on the one hand to direct conversion of the energy radiated by a radioactive source to electric energy usable by means of N-P junctions, and on the other hand to the kinetics of defects produced in the semi-conductor crystals by high energy {beta} rays. In the first part of this work, an attempt has been made to complete the earlier theories of the electron-volt effect in junctions by analysing the effect mathematically. This has led to a single equation containing the electrical and geometric parameters of the semi-conductor and of the junction, and the properties of the incident radiation. Apart from this, the diffusion current of the charge carriers created by the bombardment has been studied in more detail, taking into account all the factors which play a part in the expression of the efficiency of charge collection of a junction. In the second part, where experiments on the irradiation of N-P junctions have been carried out with a {sup 90}Sr-{sup 90}Y source, mention is made of the particular advantages of a gallium arsenide junction capable of operating at relatively high temperatures (in the region of 100 deg. C). The third part presents the study of defects created in a semi-conductor crystal by high-energy {beta} rays, according to the method of electron-volt effect. It is shown here that from a study of the degradation of the short-circuit current of the junction it may be possible to determine the recombination level and the probabilities of electron and hole capture, as from a study of the lifetime decay of minority carriers in a crystal of known type. Experiments on the bombardment of Ge junctions by 2 MeV electrons were performed with a Van de Graaff. Very clear anomalies of the electron-volt effect at 100 deg. K were observed. An attempt was made at interpretation of these anomalies in the junction

Photocurrent generation in lateral graphene p-n junction created by electron-beam irradiation

KAUST Repository

Yu, Xuechao; Shen, Youde; Liu, Tao; Wu, Tao; Jie Wang, Qi

2015-01-01

Graphene has been considered as an attractive material for optoelectronic applications such as photodetectors owing to its extraordinary properties, e.g. broadband absorption and ultrahigh mobility. However, challenges still remain in fundamental and practical aspects of the conventional graphene photodetectors which normally rely on the photoconductive mode of operation which has the drawback of e.g. high dark current. Here, we demonstrated the photovoltaic mode operation in graphene p-n junctions fabricated by a simple but effective electron irradiation method that induces n-type doping in intrinsic p-type graphene. The physical mechanism of the junction formation is owing to the substrate gating effect caused by electron irradiation. Photoresponse was obtained for this type of photodetector because the photoexcited electron-hole pairs can be separated in the graphene p-n junction by the built-in potential. The fabricated graphene p-n junction photodetectors exhibit a high detectivity up to ~3 × 1010 Jones (cm Hz1/2 W−1) at room temperature, which is on a par with that of the traditional III–V photodetectors. The demonstrated novel and simple scheme for obtaining graphene p-n junctions can be used for other optoelectronic devices such as solar cells and be applied to other two dimensional materials based devices.

Photocurrent generation in lateral graphene p-n junction created by electron-beam irradiation

KAUST Repository

Yu, Xuechao

2015-07-08

Graphene has been considered as an attractive material for optoelectronic applications such as photodetectors owing to its extraordinary properties, e.g. broadband absorption and ultrahigh mobility. However, challenges still remain in fundamental and practical aspects of the conventional graphene photodetectors which normally rely on the photoconductive mode of operation which has the drawback of e.g. high dark current. Here, we demonstrated the photovoltaic mode operation in graphene p-n junctions fabricated by a simple but effective electron irradiation method that induces n-type doping in intrinsic p-type graphene. The physical mechanism of the junction formation is owing to the substrate gating effect caused by electron irradiation. Photoresponse was obtained for this type of photodetector because the photoexcited electron-hole pairs can be separated in the graphene p-n junction by the built-in potential. The fabricated graphene p-n junction photodetectors exhibit a high detectivity up to ~3 × 1010 Jones (cm Hz1/2 W−1) at room temperature, which is on a par with that of the traditional III–V photodetectors. The demonstrated novel and simple scheme for obtaining graphene p-n junctions can be used for other optoelectronic devices such as solar cells and be applied to other two dimensional materials based devices.

Charging and geometric effects on conduction through Anthracene molecular junctions

Science.gov (United States)

Kaur, Rupan Preet; Sawhney, Ravinder Singh; Engles, Derick

We studied the geometric effects on the charge transfer through the anthracenedithiol (ADT) molecular junction using density functional theory combined with the non-equilibrium Green’s function approach. Two major geometric aspects, bond length and bond angle, were moderated to optimize the electrical conduction. From the results established in this paper, we found that the electrical conduction can be tuned from 0.2 G0 to 0.9 G0 by varying the Au-S bond length, whereas the moderation of bonding angle assayed a minor change from 0.37 G0 to 0.47 G0. We attributed this escalating zero bias conductance to the increasing charge on the terminal sulfur atom of the ADT molecule, which increased the energy of the HOMO orbital towards Fermi level and exhibited a semi-metallic behaviour. Therefore, geometry plays a critical role in deciding the charge transport through the metal/molecule interface.

Short chain molecular junctions: Charge transport versus dipole moment

International Nuclear Information System (INIS)

Ikram, I. Mohamed; Rabinal, M.K.

2015-01-01

Graphical abstract: - Highlights: • The role of dipole moment of organic molecules on molecular junctions has been studied. • Molecular junctions constituted using propargyl molecules of different dipole moments. • The electronic properties of the molecules were calculated using Gaussian software. • Junctions show varying rectification due to their varying dipole moment and orientation. - Abstract: The investigation of the influence of dipole moment of short chain organic molecules having three carbon atoms varying in end group on silicon surface was carried on. Here, we use three different molecules of propargyl series varying in dipole moment and its orientation to constitute molecular junctions. The charge transport mechanism in metal–molecules–semiconductor (MMS) junction obtained from current–voltage (I–V) characteristics shows the rectification behavior for two junctions whereas the other junction shows a weak rectification. The electronic properties of the molecules were calculated using Gaussian software package. The observed rectification behavior of these junctions is examined and found to be accounted to the orientation of dipole moment and electron cloud density distribution inside the molecules

Some chaotic features of intrinsically coupled Josephson junctions

International Nuclear Information System (INIS)

Kolahchi, M.R.; Shukrinov, Yu.M.; Hamdipour, M.; Botha, A.E.; Suzuki, M.

2013-01-01

Highlights: ► Intrinsically coupled Josephson junctions model a high-T c superconductor. ► Intrinsically coupled Josephson junctions can act as a chaotic nonlinear system. ► Chaos could be due to resonance overlap. ► Avoiding parameters that lead to chaos is important for the design of resonators. -- Abstract: We look for chaos in an intrinsically coupled system of Josephson junctions. This study has direct applications for the high-T c resonators which require coherence amongst the junctions

Inductively Coupled Plasma-Induced Etch Damage of GaN p-n Junctions

International Nuclear Information System (INIS)

SHUL, RANDY J.; ZHANG, LEI; BACA, ALBERT G.; WILLISON, CHRISTI LEE; HAN, JUNG; PEARTON, S.J.; REN, F.

1999-01-01

Plasma-induced etch damage can degrade the electrical and optical performance of III-V nitride electronic and photonic devices. We have investigated the etch-induced damage of an Inductively Coupled Plasma (ICP) etch system on the electrical performance of mesa-isolated GaN pn-junction diodes. GaN p-i-n mesa diodes were formed by Cl 2 /BCl 3 /Ar ICP etching under different plasma conditions. The reverse leakage current in the mesa diodes showed a strong relationship to chamber pressure, ion energy, and plasma flux. Plasma induced damage was minimized at moderate flux conditions (≤ 500 W), pressures ≥2 mTorr, and at ion energies below approximately -275 V

Spatial-Temporal Junction Extraction and Semantic Interpretation

DEFF Research Database (Denmark)

Simonsen, Kasper Broegaard; Thorsted Nielsen, Mads; Pilz, Florian

2009-01-01

This article describes a novel junction descriptor that encodes junctions’ semantic information in terms incoming lines’ orientations, both in 2D and 3D. A Kalman filter process is used to reduce the effect of local noise on the descriptor's error and to track the features. The improvement gained...

Gap junctions and connexin-interacting proteins

NARCIS (Netherlands)

Giepmans, Ben N G

2004-01-01

Gap junctions form channels between adjacent cells. The core proteins of these channels are the connexins. Regulation of gap junction communication (GJC) can be modulated by connexin-associating proteins, such as regulatory protein phosphatases and protein kinases, of which c-Src is the

Tunneling explains efficient electron transport via protein junctions.

Science.gov (United States)

Fereiro, Jerry A; Yu, Xi; Pecht, Israel; Sheves, Mordechai; Cuevas, Juan Carlos; Cahen, David

2018-05-15

Metalloproteins, proteins containing a transition metal ion cofactor, are electron transfer agents that perform key functions in cells. Inspired by this fact, electron transport across these proteins has been widely studied in solid-state settings, triggering the interest in examining potential use of proteins as building blocks in bioelectronic devices. Here, we report results of low-temperature (10 K) electron transport measurements via monolayer junctions based on the blue copper protein azurin (Az), which strongly suggest quantum tunneling of electrons as the dominant charge transport mechanism. Specifically, we show that, weakening the protein-electrode coupling by introducing a spacer, one can switch the electron transport from off-resonant to resonant tunneling. This is a consequence of reducing the electrode's perturbation of the Cu(II)-localized electronic state, a pattern that has not been observed before in protein-based junctions. Moreover, we identify vibronic features of the Cu(II) coordination sphere in transport characteristics that show directly the active role of the metal ion in resonance tunneling. Our results illustrate how quantum mechanical effects may dominate electron transport via protein-based junctions.

Theory of Josephson effect in Sr2RuO4/diffusive normal metal/Sr2RuO4 junctions

NARCIS (Netherlands)

Sawa, Y.; Yokoyama, T.; Tanaka, Y.; Golubov, Alexandre Avraamovitch

2007-01-01

We derive a generalized Nazarov’s boundary condition for diffusive normal metal (DN)/chiral p-wave superconductor (CP) interface including the macroscopic phase of the superconductor. The Josephson effect is studied in CP/DN/CP junctions solving the Usadel equations under the above boundary

Relationships between junction temperature, electroluminescence spectrum and ageing of light-emitting diodes

Science.gov (United States)

Vaskuri, Anna; Kärhä, Petri; Baumgartner, Hans; Kantamaa, Olli; Pulli, Tomi; Poikonen, Tuomas; Ikonen, Erkki

2018-04-01

We have developed spectral models describing the electroluminescence spectra of AlGaInP and InGaN light-emitting diodes (LEDs) consisting of the Maxwell-Boltzmann distribution and the effective joint density of states. One spectrum at a known temperature for one LED specimen is needed for calibrating the model parameters of each LED type. Then, the model can be used for determining the junction temperature optically from the spectral measurement, because the junction temperature is one of the free parameters. We validated the models using, in total, 53 spectra of three red AlGaInP LED specimens and 72 spectra of three blue InGaN LED specimens measured at various current levels and temperatures between 303 K and 398 K. For all the spectra of red LEDs, the standard deviation between the modelled and measured junction temperatures was only 2.4 K. InGaN LEDs have a more complex effective joint density of states. For the blue LEDs, the corresponding standard deviation was 11.2 K, but it decreased to 3.5 K when each LED specimen was calibrated separately. The method of determining junction temperature was further tested on white InGaN LEDs with luminophore coating and LED lamps. The average standard deviation was 8 K for white InGaN LED types. We have six years of ageing data available for a set of LED lamps and we estimated the junction temperatures of these lamps with respect to their ageing times. It was found that the LEDs operating at higher junction temperatures were frequently more damaged.

Annealing effect on the reproducibility of Josephson Junctions made by ion irradiation

Energy Technology Data Exchange (ETDEWEB)

Sirena, M; Matzen, S; Bergeal, N; Lesueur, J [Laboratoire Photons Et Matiere, CNRS, ESPCI, 10 Rue Vauquelin 75231 Paris (France) (France); Faini, G [Laboratoire de Photonique et Nanostructures, Route de Nozay, 91460 Marcoussis (France) (France); Bernard, R; Briatico, J; Crete, D [UMR-CNRS/THALES, Route D128, 91767 Palaiseau (France) (France)], E-mail: martin.sirena@espci.fr

2008-02-01

We have studied the annealing effects on the transport properties of High Tc Josephson Junctions (JJ) made by ion irradiation. Several JJ were measured for different annealing times and the experimental data were compared to numerical simulations. We have successfully used a vacancy-interstitial annihilation mechanism to describe the evolution of the JJ coupling temperature (T{sub J}) and the homogeneity of a JJ array, related to the evolution of the defects density mean value and its distribution width. For sufficient long annealing times (t > 600 min), {delta}T{sub J} was significatively reduced. This result appears to be very encouraging for future applications where the spread in JJ characteristics has to be as low as possible.

Annealing effect on the reproducibility of Josephson Junctions made by ion irradiation

International Nuclear Information System (INIS)

Sirena, M; Matzen, S; Bergeal, N; Lesueur, J; Faini, G; Bernard, R; Briatico, J; Crete, D

2008-01-01

We have studied the annealing effects on the transport properties of High Tc Josephson Junctions (JJ) made by ion irradiation. Several JJ were measured for different annealing times and the experimental data were compared to numerical simulations. We have successfully used a vacancy-interstitial annihilation mechanism to describe the evolution of the JJ coupling temperature (T J ) and the homogeneity of a JJ array, related to the evolution of the defects density mean value and its distribution width. For sufficient long annealing times (t > 600 min), ΔT J was significatively reduced. This result appears to be very encouraging for future applications where the spread in JJ characteristics has to be as low as possible

Effects of organic degradation products on the sorption of actinides

Energy Technology Data Exchange (ETDEWEB)

Baston, G.M.N.; Berry, J.A.; Bond, K.A.; Brownsword, M.; Linklater, C.M. (AEA Decommissioning and Radwaste, Harwell Lab. (United Kingdom))

1992-01-01

Previous work has shown that products from the chemical degradation of cellulosic matter can significantly reduce sorption of uranium(VI) and plutonium(IV) on geological materials. Uranium(IV) batch sorption experiments have now been performed to study the effect of organic degradation products in a reducing environment. Thorium(IV) sorption has also been studied since thorium is an important radioelement in its own right and has potential use as a simulant for other tetravalent actinides. Sorption onto London clay, Caithness flagstones and St. Bees sandstone was investigated. Experimental conditions were chosen to simulate both those expected close to cementitious repository (pH [proportional to] 11) and at the edge of the zone of migration of the alkaline plume (pH [proportional to] 8). Work was carried out with both authentic degradation products and with gluconate, acting as a well-characterized simulant for cellulosic degradation products. The results show that the presence of organic species can cause a reduction in sorption. This is especially so in the presence of a high concentration of gluconate ions, but the reduction is significantly less with authentic degradation products. (orig.).

Ballistic One-Dimensional InAs Nanowire Cross-Junction Interconnects.

Science.gov (United States)

Gooth, Johannes; Borg, Mattias; Schmid, Heinz; Schaller, Vanessa; Wirths, Stephan; Moselund, Kirsten; Luisier, Mathieu; Karg, Siegfried; Riel, Heike

2017-04-12

Coherent interconnection of quantum bits remains an ongoing challenge in quantum information technology. Envisioned hardware to achieve this goal is based on semiconductor nanowire (NW) circuits, comprising individual NW devices that are linked through ballistic interconnects. However, maintaining the sensitive ballistic conduction and confinement conditions across NW intersections is a nontrivial problem. Here, we go beyond the characterization of a single NW device and demonstrate ballistic one-dimensional (1D) quantum transport in InAs NW cross-junctions, monolithically integrated on Si. Characteristic 1D conductance plateaus are resolved in field-effect measurements across up to four NW-junctions in series. The 1D ballistic transport and sub-band splitting is preserved for both crossing-directions. We show that the 1D modes of a single injection terminal can be distributed into multiple NW branches. We believe that NW cross-junctions are well-suited as cross-directional communication links for the reliable transfer of quantum information as required for quantum computational systems.

Advance of Mechanically Controllable Break Junction for Molecular Electronics.

Science.gov (United States)

Wang, Lu; Wang, Ling; Zhang, Lei; Xiang, Dong

2017-06-01

Molecular electronics stands for the ultimate size of functional elements, keeping up with an unstoppable trend over the past few decades. As a vital component of molecular electronics, single molecular junctions have attracted significant attention from research groups all over the world. Due to its pronounced superiority, the mechanically controllable break junctions (MCBJ) technique has been widely applied to characterize the dynamic performance of single molecular junctions. This review presents a system analysis for single-molecule junctions and offers an overview of four test-beds for single-molecule junctions, thus offering more insight into the mechanisms of electron transport. We mainly focus on the development of state-of-the-art mechanically controlled break junctions. The three-terminal gated MCBJ approaches are introduced to manipulate the electron transport of molecules, and MCBJs are combined with characterization techniques. Additionally, applications of MCBJs and remarkable properties of single molecules are addressed. Finally, the challenges and perspective for the mechanically controllable break junctions technique are provided.

Microwave phase locking of Josephson-junction fluxon oscillators

DEFF Research Database (Denmark)

Salerno, M.; Samuelsen, Mogens Rugholm; Filatrella, G.

1990-01-01

Application of the classic McLaughlin-Scott soliton perturbation theory to a Josephson-junction fluxon subjected to a microwave field that interacts with the fluxon only at the junction boundaries reduces the problem of phase locking of the fluxon oscillation to the study of a two-dimensional fun......Application of the classic McLaughlin-Scott soliton perturbation theory to a Josephson-junction fluxon subjected to a microwave field that interacts with the fluxon only at the junction boundaries reduces the problem of phase locking of the fluxon oscillation to the study of a two...

The critical current of point symmetric Josephson tunnel junctions

International Nuclear Information System (INIS)

Monaco, Roberto

2016-01-01

Highlights: • We disclose some geometrical properties of the critical current field dependence that apply to a large class of Josephson junctions characterized by a point symmetric shape. • The developed theory is valid for any orientation of the applied magnetic field, therefore it allows the determine the consequences of field misalignment in the experimental setups. • We also address that the threshold curves of Josephson tunnel junctions with complex shapes can be expressed as a linear combination of the threshold curves of junctions with simpler point symmetric shapes. - Abstract: The physics of Josephson tunnel junctions drastically depends on their geometrical configurations. The shape of the junction determines the specific form of the magnetic-field dependence of its Josephson current. Here we address the magnetic diffraction patterns of specially shaped planar Josephson tunnel junctions in the presence of an in-plane magnetic field of arbitrary orientations. We focus on a wide ensemble of junctions whose shape is invariant under point reflection. We analyze the implications of this type of isometry and derive the threshold curves of junctions whose shape is the union or the relative complement of two point symmetric plane figures.

Study on Effect of Junction Temperature Swing Duration on Lifetime of Transfer Molded Power IGBT Modules

DEFF Research Database (Denmark)

Choi, Uimin; Blaabjerg, Frede; Jørgensen, Søren

2017-01-01

levels are presented. This study enables to include the tΔTj effect on lifetime model of IGBT modules for its lifetime estimation and it may result in improved lifetime prediction of IGBT modules under given mission profiles of converters. A postfailure analysis of the tested IGBT modules is also......In this paper, the effect of junction temperature swing duration on lifetime of transfer molded power insulated gate bipolar transistor (IGBT) modules is studied and a relevant lifetime factor is modeled. This study is based on 39 accelerated power cycling test results under six different...

Effects of metal ions on the catalytic degradation of dicofol by cellulase.

Science.gov (United States)

Zhai, Zihan; Yang, Ting; Zhang, Boya; Zhang, Jianbo

2015-07-01

A new technique whereby cellulase immobilized on aminated silica was applied to catalyze the degradation of dicofol, an organochlorine pesticide. In order to evaluate the performance of free and immobilized cellulase, experiments were carried out to measure the degradation efficiency. The Michaelis constant, Km, of the reaction catalyzed by immobilized cellulase was 9.16 mg/L, and the maximum reaction rate, Vmax, was 0.40 mg/L/min, while that of free cellulase was Km=8.18 mg/L, and Vmax=0.79 mg/L/min, respectively. The kinetic constants of catalytic degradation were calculated to estimate substrate affinity. Considering that metal ions may affect enzyme activity, the effects of different metal ions on the catalytic degradation efficiency were explored. The results showed that the substrate affinity decreased after immobilization. Monovalent metal ions had no effect on the reaction, while divalent metal ions had either positive or inhibitory effects, including activation by Mn2+, reversible competition with Cd2+, and irreversible inhibition by Pb2+. Ca2+ promoted the catalytic degradation of dicofol at low concentrations, but inhibited it at high concentrations. Compared with free cellulase, immobilized cellulase was affected less by metal ions. This work provided a basis for further studies on the co-occurrence of endocrine-disrupting chemicals and heavy metal ions in the environment. Copyright © 2015. Published by Elsevier B.V.

Preliminary Experimental Study on Pressure Loss Coefficients of Exhaust Manifold Junction

Directory of Open Access Journals (Sweden)

Xiao-lu Lu

2014-01-01

Full Text Available The flow characteristic of exhaust system has an important impact on inlet boundary of the turbine. In this paper, high speed flow in a diesel exhaust manifold junction was tested and simulated. The pressure loss coefficient of the junction flow was analyzed. The steady experimental results indicated that both of static pressure loss coefficients L13 and L23 first increased and then decreased with the increase of mass flow ratio of lateral branch and public manifold. The total pressure loss coefficient K13 always increased with the increase of mass flow ratio of junctions 1 and 3. The total pressure loss coefficient K23 first increased and then decreased with the increase of mass flow ratio of junctions 2 and 3. These pressure loss coefficients of the exhaust pipe junctions can be used in exhaust flow and turbine inlet boundary conditions analysis. In addition, simulating calculation was conducted to analyze the effect of branch angle on total pressure loss coefficient. According to the calculation results, total pressure loss coefficient was almost the same at low mass flow rate of branch manifold 1 but increased with lateral branch angle at high mass flow rate of branch manifold 1.

Effect of bundle junction face and misalignment on the pressure drops across a randomly loaded and aligned 12 bundles in CANDU fuel channel

Energy Technology Data Exchange (ETDEWEB)

Suk, H. C.; Sim, K. S.; Chang, C. H.; Lee, Y. O. [Korea Atomic Energy Reaearch Institute, Taejon (Korea, Republic of)

1996-06-01

The pressure drop of twelve fuel bundle string in the CANDU-6 fuel channel is equal to the sum of the eleven junction pressure losses, the bundle string entrance and exit pressure losses, the skin friction pressure loss, and other appendage pressure losses, where the junction loss is dependent on the bundle and faces and angular alignments of the junctions. The results of the single junction pressure drop tests in a short rig show that the most probable pressure drop of the eleven junction was analytically equal to the eleven times of average pressure drop of all the possible single junction pressure drops, and also that the largest and smallest junction pressure drops across the eleven junctions probably occurred only with BA and BB type junctions, respectively, where A and B denote the bundle end sides with an end-plates on which a company monogram is stamped and unstamped, respectively. 5 refs., 7 figs., 1 tab. (author).

Experimental observations of thermal mixing characteristics in T-junction piping

Energy Technology Data Exchange (ETDEWEB)

Chen, Mei-Shiue, E-mail: chenms@mx.nthu.edu.tw; Hsieh, Huai-En; Ferng, Yuh-Ming; Pei, Bau-Shi

2014-09-15

Highlights: • The effects of flow velocity ratio on thermal mixing phenomenon are the major parameters. • The flow velocity ratio (V{sub b}/V{sub m}) is greater than 13.6, reverse flow occurs. • The flow velocity ratio is greater than 13.7, a “good” mixing quality is achieved. - Abstract: The T-junction piping is frequently used in many industrial applications, including the nuclear plants. For a pressurized water reactor (PWR), the emergency core cooling systems (ECCS) inject cold water into the primary loops if a loss-of-coolant accident (LOCA) happens. Inappropriate mixing of the two streams with significant temperature different at a junction may cause strong thermal stresses to the downstream structures in the reactor vessel. The downstream structures may be damaged. This study is an experimental investigation into the thermal mixing effect occurring at a T-junction. A small-scale test facility was established to observe the mixing effect of flows with different temperature. Thermal mixing effect with different flow rates in the main and branch pipes are investigated by measuring the temperature distribution along the main pipe. In test condition I, we found that lower main pipe flow rate leads to better mixing effect with constant branch pipe flow rate. And in conditions II and III, higher injection flow velocity would enhance the turbulence effect which results in better thermal mixing. The results will be useful for applications with mixing fluids with different temperature.

Solar cell junction temperature measurement of PV module

KAUST Repository

Huang, B.J.

2011-02-01

The present study develops a simple non-destructive method to measure the solar cell junction temperature of PV module. The PV module was put in the environmental chamber with precise temperature control to keep the solar PV module as well as the cell junction in thermal equilibrium with the chamber. The open-circuit voltage of PV module Voc is then measured using a short pulse of solar irradiation provided by a solar simulator. Repeating the measurements at different environment temperature (40-80°C) and solar irradiation S (200-1000W/m2), the correlation between the open-circuit voltage Voc, the junction temperature Tj, and solar irradiation S is derived.The fundamental correlation of the PV module is utilized for on-site monitoring of solar cell junction temperature using the measured Voc and S at a short time instant with open circuit. The junction temperature Tj is then determined using the measured S and Voc through the fundamental correlation. The outdoor test results show that the junction temperature measured using the present method, Tjo, is more accurate. The maximum error using the average surface temperature Tave as the junction temperature is 4.8 °C underestimation; while the maximum error using the present method is 1.3 °C underestimation. © 2010 Elsevier Ltd.

Soliton excitations in Josephson tunnel junctions

DEFF Research Database (Denmark)

Lomdahl, P. S.; Sørensen, O. H.; Christiansen, Peter Leth

1982-01-01

A detailed numerical study of a sine-Gordon model of the Josephson tunnel junction is compared with experimental measurements on junctions with different L / λJ ratios. The soliton picture is found to apply well on both relatively long (L / λJ=6) and intermediate (L / λJ=2) junctions. We find good...... agreement for the current-voltage characteristics, power output, and for the shape and height of the zero-field steps (ZFS). Two distinct modes of soliton oscillations are observed: (i) a bunched or congealed mode giving rise to the fundamental frequency f1 on all ZFS's and (ii) a "symmetric" mode which...... on the Nth ZFS yields the frequency Nf1 Coexistence of two adjacent frequencies is found on the third ZFS of the longer junction (L / λJ=6) in a narrow range of bias current as also found in the experiments. Small asymmetries in the experimental environment, a weak magnetic field, e.g., is introduced via...

Rapid prototyping of magnetic tunnel junctions with focused ion beam processes

International Nuclear Information System (INIS)

Persson, Anders; Thornell, Greger; Nguyen, Hugo

2010-01-01

Submicron-sized magnetic tunnel junctions (MTJs) are most often fabricated by time-consuming and expensive e-beam lithography. From a research and development perspective, a short lead time is one of the major concerns. Here, a rapid process scheme for fabrication of micrometre size MTJs with focused ion beam processes is presented. The magnetic properties of the fabricated junctions are investigated in terms of magnetic domain structure, tunnelling magnetoresistance (TMR) and coercivity, with extra attention given to the effect of Ga implantation from the ion beam. In particular, the effect of the implantation on the minimum junction size and the magnetization of the sensing layer are studied. In the latter case, magnetic force microscopy and micromagnetic simulations, with the object-oriented micromagnetic framework (OOMMF), are used to study the magnetization reversal. The fabricated junctions show considerable coercivity both along their hard and easy axes. Interestingly, the sensing layer exhibits two remanent states: one with a single and one with a double domain. The hard axis TMR loop has kinks at about ±20 mT which is attributed to a non-uniform lateral coercivity, where the rim of the junctions, which is subjected to Ga implantation from the flank of the ion beam, is more coercive than the unirradiated centre. The width of the coercive rim is estimated to be 160 nm from the hard axis TMR loop. The easy axis TMR loop shows more coercivity than an unirradiated junction and, this too, is found to stem from the coercive rim, as seen from the simulations. It is concluded that the process scheme has three major advantages. Firstly, it has a high lateral and depth resolution—the depth resolution is enhanced by end point detection—and is capable of making junctions of sizes down towards the limit set by the width of the irradiated rim. Secondly, the most delicate process steps are performed in the unbroken vacuum enabling the use of materials prone to

Constructing carbon nanotube junctions by Ar ion beam irradiation

International Nuclear Information System (INIS)

Ishaq, Ahmad; Ni Zhichun; Yan Long; Gong Jinlong; Zhu Dezhang

2010-01-01

Carbon nanotubes (CNTs) irradiated by Ar ion beams at elevated temperature were studied. The irradiation-induced defects in CNTs are greatly reduced by elevated temperature. Moreover, the two types of CNT junctions, the crossing junction and the parallel junction, were formed. And the CNT networks may be fabricated by the two types of CNT junctions. The formation process and the corresponding mechanism of CNT networks are discussed.

The psychostimulant modafinil enhances gap junctional communication in cortical astrocytes.

Science.gov (United States)

Liu, Xinhe; Petit, Jean-Marie; Ezan, Pascal; Gyger, Joël; Magistretti, Pierre; Giaume, Christian

2013-12-01

Sleep-wake cycle is characterized by changes in neuronal network activity. However, for the last decade there is increasing evidence that neuroglial interaction may play a role in the modulation of sleep homeostasis and that astrocytes have a critical impact in this process. Interestingly, astrocytes are organized into communicating networks based on their high expression of connexins, which are the molecular constituents of gap junction channels. Thus, neuroglial interactions should also be considered as the result of the interplay between neuronal and astroglial networks. Here, we investigate the effect of modafinil, a wakefulness-promoting agent, on astrocyte gap junctional communication. We report that in the cortex modafinil injection increases the expression of mRNA and protein of connexin 30 but not those of connexin 43, the other major astroglial connexin. These increases are correlated with an enhancement of intercellular dye coupling in cortical astrocytes, which is abolished when neuronal activity is silenced by tetrodotoxin. Moreover, gamma-hydroxybutyric acid, which at a millimolar concentration induces sleep, has an opposite effect on astroglial gap junctions in an activity-independent manner. These results support the proposition that astroglia may play an important role in complex physiological brain functions, such as sleep regulation, and that neuroglial networking interaction is modified during sleep-wake cycle. This article is part of the Special Issue Section entitled 'Current Pharmacology of Gap Junction Channels and Hemichannels'. Copyright © 2013. Published by Elsevier Ltd.

Shunted-Josephson-junction model. II. The nonautonomous case