WorldWideScience

Sample records for junction cap layer

  1. Large influence of capping layers on tunnel magnetoresistance in magnetic tunnel junctions

    Science.gov (United States)

    Zhou, Jiaqi; Zhao, Weisheng; Wang, Yin; Peng, Shouzhong; Qiao, Junfeng; Su, Li; Zeng, Lang; Lei, Na; Liu, Lei; Zhang, Youguang; Bournel, Arnaud

    2016-12-01

    It has been reported in experiments that capping layers, which enhance the perpendicular magnetic anisotropy (PMA) of magnetic tunnel junctions (MTJs), induce a great impact on the tunnel magnetoresistance (TMR). To explore the essential influence caused by the capping layers, we carry out ab initio calculations on TMR in the X(001)|CoFe(001)|MgO(001)|CoFe(001)|X(001) MTJ, where X represents the capping layer material, which can be tungsten, tantalum, or hafnium. We report TMR in different MTJs and demonstrate that tungsten is an ideal candidate for a giant TMR ratio. The transmission spectrum in Brillouin zone is presented. It can be seen that in the parallel condition of MTJ, sharp transmission peaks appear in the minority-spin channel. This phenomenon is attributed to the resonant tunnel transmission effect, and we explained it by the layer-resolved density of states. In order to explore transport properties in MTJs, the density of scattering states was studied from the point of band symmetry. It has been found that CoFe|tungsten interface blocks scattering states transmission in the anti-parallel condition. This work reports TMR and transport properties in MTJs with different capping layers and proves that tungsten is a proper capping layer material, which would benefit the design and optimization of MTJs.

  2. Large influence of capping layers on tunnel magnetoresistance in CoFe/MgO/CoFe magnetic tunnel junctions

    CERN Document Server

    Zhou, Jiaqi; Wang, Yin; Peng, Shouzhong; Qiao, Junfeng; Su, Li; Zeng, Lang; Lei, Na; Zhang, Youguang; Bournel, Arnaud

    2016-01-01

    We report the first-principles theoretical investigations of the tunnel magnetoresistance(TMR) effect in the symmetric capping layer/CoFe(001)/MgO(001)/CoFe(001)/capping layer magnetic tunnel junctions(MTJs) with Ta, Hf and Ir used as capping layer materials. Spin-resolved conductance and TMR ratios are shown and it is found that the TMR ratio is sensitive to the capping layer material. The spin polarization of s state in Co atom at the CoFe/capping layer interface is presented to explain the influence on TMR ratio caused by different capping layers, and we can obtain a high spin polarization value and a giant TMR ratio when Ir is used, demonstrating that Ir is an ideal capping layer material. We also study the spin-polarized transport properties in the Brillouin zone. In the parallel condition, a central broad peak is found in the majority-spin channel due to the {\\Delta}1 state, while sharp transmission probability peaks at some k||-points appear in the minority-spin channel. The sharp peak phenomenon is at...

  3. BEOL compatible high tunnel magneto resistance perpendicular magnetic tunnel junctions using a sacrificial Mg layer as CoFeB free layer cap

    Energy Technology Data Exchange (ETDEWEB)

    Swerts, J., E-mail: Johan.Swerts@imec.be; Mertens, S.; Lin, T.; Couet, S.; Tomczak, Y.; Sankaran, K.; Pourtois, G.; Kim, W.; Meersschaut, J.; Souriau, L.; Radisic, D.; Van Elshocht, S.; Kar, G.; Furnemont, A. [imec, Kapeldreef 75, Leuven 3001 (Belgium)

    2015-06-29

    Perpendicularly magnetized MgO-based tunnel junctions are envisaged for future generation spin-torque transfer magnetoresistive random access memory devices. Achieving a high tunnel magneto resistance and preserving it together with the perpendicular magnetic anisotropy during BEOL CMOS processing are key challenges to overcome. The industry standard technique to deposit the CoFeB/MgO/CoFeB tunnel junctions is physical vapor deposition. In this letter, we report on the use of an ultrathin Mg layer as free layer cap to protect the CoFeB free layer from sputtering induced damage during the Ta electrode deposition. When Ta is deposited directly on CoFeB, a fraction of the surface of the CoFeB is sputtered even when Ta is deposited with very low deposition rates. When depositing a thin Mg layer prior to Ta deposition, the sputtering of CoFeB is prevented. The ultra-thin Mg layer is sputtered completely after Ta deposition. Therefore, the Mg acts as a sacrificial layer that protects the CoFeB from sputter-induced damage during the Ta deposition. The Ta-capped CoFeB free layer using the sacrificial Mg interlayer has significantly better electrical and magnetic properties than the equivalent stack without protective layer. We demonstrate a tunnel magneto resistance increase up to 30% in bottom pinned magnetic tunnel junctions and tunnel magneto resistance values of 160% at resistance area product of 5 Ω.μm{sup 2}. Moreover, the free layer maintains perpendicular magnetic anisotropy after 400 °C annealing.

  4. BEOL compatible high tunnel magneto resistance perpendicular magnetic tunnel junctions using a sacrificial Mg layer as CoFeB free layer cap

    Science.gov (United States)

    Swerts, J.; Mertens, S.; Lin, T.; Couet, S.; Tomczak, Y.; Sankaran, K.; Pourtois, G.; Kim, W.; Meersschaut, J.; Souriau, L.; Radisic, D.; Van Elshocht, S.; Kar, G.; Furnemont, A.

    2015-06-01

    Perpendicularly magnetized MgO-based tunnel junctions are envisaged for future generation spin-torque transfer magnetoresistive random access memory devices. Achieving a high tunnel magneto resistance and preserving it together with the perpendicular magnetic anisotropy during BEOL CMOS processing are key challenges to overcome. The industry standard technique to deposit the CoFeB/MgO/CoFeB tunnel junctions is physical vapor deposition. In this letter, we report on the use of an ultrathin Mg layer as free layer cap to protect the CoFeB free layer from sputtering induced damage during the Ta electrode deposition. When Ta is deposited directly on CoFeB, a fraction of the surface of the CoFeB is sputtered even when Ta is deposited with very low deposition rates. When depositing a thin Mg layer prior to Ta deposition, the sputtering of CoFeB is prevented. The ultra-thin Mg layer is sputtered completely after Ta deposition. Therefore, the Mg acts as a sacrificial layer that protects the CoFeB from sputter-induced damage during the Ta deposition. The Ta-capped CoFeB free layer using the sacrificial Mg interlayer has significantly better electrical and magnetic properties than the equivalent stack without protective layer. We demonstrate a tunnel magneto resistance increase up to 30% in bottom pinned magnetic tunnel junctions and tunnel magneto resistance values of 160% at resistance area product of 5 Ω.μm2. Moreover, the free layer maintains perpendicular magnetic anisotropy after 400 °C annealing.

  5. Magnetic tunnel junctions for magnetic field sensor by using CoFeB sensing layer capped with MgO film

    Energy Technology Data Exchange (ETDEWEB)

    Takenaga, Takashi, E-mail: takenaga@leap.or.jp; Tsuzaki, Yosuke; Yoshida, Chikako; Yamazaki, Yuichi; Hatada, Akiyoshi; Nakabayashi, Masaaki; Iba, Yoshihisa; Takahashi, Atsushi; Noshiro, Hideyuki; Tsunoda, Koji; Aoki, Masaki; Furukawa, Taisuke; Fukumoto, Hiroshi; Sugii, Toshihiro [Low-power Electronics Association and Project (LEAP), Tsukuba 305-8569 (Japan)

    2014-05-07

    We evaluated MgO-based magnetic tunnel junctions (MTJs) for magnetic field sensors with spin-valve-type structures in the CoFeB sensing layer capped by an MgO film in order to obtain both top and bottom interfaces of MgO/CoFeB exhibiting interfacial perpendicular magnetic anisotropy (PMA). Hysteresis of the CoFeB sensing layer in these MTJs annealed at 275 °C was suppressed at a thickness of the sensing layer below 1.2 nm by interfacial PMA. We confirmed that the CoFeB sensing layers capped with MgO suppress the thickness dependences of both the magnetoresistance ratio and the magnetic behaviors of the CoFeB sensing layer more than that of the MTJ with a Ta capping layer. MgO-based MTJs with MgO capping layers can improve the controllability of the characteristics for magnetic field sensors.

  6. Effect of Mo capping layers thickness on the perpendicular magnetic anisotropy in MgO/CoFeB based top magnetic tunnel junction structure

    Science.gov (United States)

    Liu, Yi; Zhu, Kai-Gui; Zhong, Hui-Cai; Zhu, Zheng-Yong; Yu, Tao; Ma, Su-De

    2016-11-01

    A detailed study of the magnetic characterizations of the top structure MgO/CoFeB/Mo is presented. The samples show strong perpendicular magnetic anisotropy (PMA) when the thickness of CoFeB is 0.9 nm and 1.1 nm. The saturation magnetic moment and interface anisotropy constant are 1566 emu/cm3 and 3.75 erg/cm2, respectively. The magnetic dead layer (MDL) is about 0.23 nm in this system. Furthermore, strong capping layer thickness dependence is also observed. The strong PMA of 1.1 nm CoFeB only exists in a Mo cap layer thickness window of 1.2-2 nm. To maintain PMA, the metal layer could not be too thin or thick in these multilayers. The oxidation and diffusion of the metal capping layer should be respectively responsibility for the degradation of PMA in these thin or thick metal capping layer samples. Project supported by the National Fundamental Research Program of China (Grant No. 2011CB921804) and Beijing Key Subject Foundation of Condensed Matter Physics, China (Grant No. 0114023).

  7. Circumpolar Active-Layer Permafrost System (CAPS)

    Data.gov (United States)

    National Oceanic and Atmospheric Administration, Department of Commerce — The Circumpolar Active-Layer Permafrost System (CAPS) contains over 100 data sets pertaining to permafrost and frozen ground topics. It also contains detailed...

  8. Rectifying Properties of a Nitrogen/Boron-Doped Capped-Carbon-Nanotube-Based Molecular Junction

    Institute of Scientific and Technical Information of China (English)

    ZHAO Peng; LIU De-Sheng; ZHANG Ying; WANG Pei-Ji; ZHANG Zhong

    2011-01-01

    @@ Based on the non-equilibrium Green's function method and first-principles density functional theory calculations, we investigate the electronic transport properties of a nitrogen/boron-doped capped-single-walled carbonnanotube-based molecular junction.Obvious rectifying behavior is observed and it is strongly dependent on the doping site.The best rectifying performance can be carried out when the nitrogen/boron atom dopes at a carbon site in the second layer.Moreover, the rectifying performance can be further improved by adjusting the distance between the Cso nanotube caps.%Based on the non-equilibrium Green's function method and first-principles density functional theory calculations, we investigate the electronic transport properties of a nitrogen/boron-doped capped-single-walled carbon-nanotube-based molecular junction. Obvious rectifying behavior is observed and it is strongly dependent on the doping site. The best rectifying performance can be carried out when the nitrogen/boron atom dopes at a carbon site in the second layer. Moreover, the rectifying performance can be further improved by adjusting the distance between the C60 nanotube caps.

  9. Origin of interfacial perpendicular magnetic anisotropy in MgO/CoFe/metallic capping layer structures.

    Science.gov (United States)

    Peng, Shouzhong; Wang, Mengxing; Yang, Hongxin; Zeng, Lang; Nan, Jiang; Zhou, Jiaqi; Zhang, Youguang; Hallal, Ali; Chshiev, Mairbek; Wang, Kang L; Zhang, Qianfan; Zhao, Weisheng

    2015-12-11

    Spin-transfer-torque magnetic random access memory (STT-MRAM) attracts extensive attentions due to its non-volatility, high density and low power consumption. The core device in STT-MRAM is CoFeB/MgO-based magnetic tunnel junction (MTJ), which possesses a high tunnel magnetoresistance ratio as well as a large value of perpendicular magnetic anisotropy (PMA). It has been experimentally proven that a capping layer coating on CoFeB layer is essential to obtain a strong PMA. However, the physical mechanism of such effect remains unclear. In this paper, we investigate the origin of the PMA in MgO/CoFe/metallic capping layer structures by using a first-principles computation scheme. The trend of PMA variation with different capping materials agrees well with experimental results. We find that interfacial PMA in the three-layer structures comes from both the MgO/CoFe and CoFe/capping layer interfaces, which can be analyzed separately. Furthermore, the PMAs in the CoFe/capping layer interfaces are analyzed through resolving the magnetic anisotropy energy by layer and orbital. The variation of PMA with different capping materials is attributed to the different hybridizations of both d and p orbitals via spin-orbit coupling. This work can significantly benefit the research and development of nanoscale STT-MRAM.

  10. Origin of interfacial perpendicular magnetic anisotropy in MgO/CoFe/metallic capping layer structures

    Science.gov (United States)

    Peng, Shouzhong; Wang, Mengxing; Yang, Hongxin; Zeng, Lang; Nan, Jiang; Zhou, Jiaqi; Zhang, Youguang; Hallal, Ali; Chshiev, Mairbek; Wang, Kang L.; Zhang, Qianfan; Zhao, Weisheng

    2015-12-01

    Spin-transfer-torque magnetic random access memory (STT-MRAM) attracts extensive attentions due to its non-volatility, high density and low power consumption. The core device in STT-MRAM is CoFeB/MgO-based magnetic tunnel junction (MTJ), which possesses a high tunnel magnetoresistance ratio as well as a large value of perpendicular magnetic anisotropy (PMA). It has been experimentally proven that a capping layer coating on CoFeB layer is essential to obtain a strong PMA. However, the physical mechanism of such effect remains unclear. In this paper, we investigate the origin of the PMA in MgO/CoFe/metallic capping layer structures by using a first-principles computation scheme. The trend of PMA variation with different capping materials agrees well with experimental results. We find that interfacial PMA in the three-layer structures comes from both the MgO/CoFe and CoFe/capping layer interfaces, which can be analyzed separately. Furthermore, the PMAs in the CoFe/capping layer interfaces are analyzed through resolving the magnetic anisotropy energy by layer and orbital. The variation of PMA with different capping materials is attributed to the different hybridizations of both d and p orbitals via spin-orbit coupling. This work can significantly benefit the research and development of nanoscale STT-MRAM.

  11. Enhanced annealing stability and perpendicular magnetic anisotropy in perpendicular magnetic tunnel junctions using W layer

    Science.gov (United States)

    Chatterjee, Jyotirmoy; Sousa, Ricardo C.; Perrissin, Nicolas; Auffret, Stéphane; Ducruet, Clarisse; Dieny, Bernard

    2017-05-01

    The magnetic properties of the perpendicular storage electrode (buffer/MgO/FeCoB/Cap) were studied as a function of annealing temperature by replacing Ta with W and W/Ta cap layers with variable thicknesses. W in the cap boosts up the annealing stability and increases the effective perpendicular anisotropy by 30% compared to the Ta cap. Correspondingly, an increase in the FeCoB critical thickness characterizing the transition from perpendicular to in-plane anisotropy was observed. Thicker W layer in the W(t)/Ta 1 nm cap layer makes the storage electrode highly robust against annealing up to 570 °C. The stiffening of the overall stack resulting from the W insertion due to its very high melting temperature seems to be the key mechanism behind the extremely high thermal robustness. The Gilbert damping constant of FeCoB with the W/Ta cap was found to be lower when compared with the Ta cap and stable with annealing. The evolution of the magnetic properties of bottom pinned perpendicular magnetic tunnel junctions (p-MTJ) stack with the W2/Ta1 nm cap layer shows back-end-of-line compatibility with increasing tunnel magnetoresistance up to the annealing temperature of 425 °C. The pMTJ thermal budget is limited by the synthetic antiferromagnetic hard layer which is stable up to 425 °C annealing temperature while the storage layer is stable up to 455 °C.

  12. Design and Performance of Capping Layers for EUV Multilayer Mirrors

    Energy Technology Data Exchange (ETDEWEB)

    Bajt, S; Chapman, H N; Nuygen, N; Alameda, J; Robinson, J C; Malinowski, M; Gullikson, E; Aquila, A; Tarrio, C; Grantham, S

    2003-03-10

    The reflectance stability of multilayer coatings for extreme ultraviolet lithography (EUVL) in a commercial tool environment is of uttermost importance to ensure continuous exposures with minimum maintenance cost. We have made substantial progress in designing the protective capping layer coatings, understanding their performance and estimating their lifetimes based on accelerated electron beam and EUV exposure studies. Our current capping layer coatings have about 40 times longer lifetimes than Si-capped multilayer optics. Nevertheless, the lifetime of current Ru-capped multilayers is too short to satisfy commercial tool requirements and further improvements are essential.

  13. Discussion on the Energy Conservation across a Sharp Gradient Junction in SPACE-CAP Code

    Energy Technology Data Exchange (ETDEWEB)

    Hong, Soon Joon; Choo, Yeon Joon; Hwang, Su Hyun; Kim, Min Gi; Lee, Byung Chul [Seoul National University, Seoul (Korea, Republic of)

    2011-05-15

    SPACE code for RCS (Reactor Coolant System) analysis and CAP code for containment analysis are now under V and V (Validation and Verification). CAP code has undergone or will undergo so many test problems for following categories: 1) Fundamental phenomena. 2) Principle phenomena (mixing and transport) and components in containment. 3) Demonstration test by small, middle, large facilities and International Standard Problems. 4) Comparison with other containment codes such as GOTHIC or COMTEMPT. CAP V and V is now in the category 3 above. Most important demand for CAP code at this time is the capability of containment pressure and temperature analysis. Thus, the V and V for thermodynamics problems and energy conservation is extremely important. Energy conservation should be at times carefully examined in case of sharp gradient across a junction when the form of energy equation is based on the specific internal energy. This paper discusses on the energy conservation across a sharp gradient junction

  14. Tailoring capping layers to reduce stress gradients in copper metallization

    Science.gov (United States)

    Murray, Conal E.; Priyadarshini, Deepika; Nguyen, Son; Ryan, E. Todd

    2016-12-01

    Capping layers for back-end-of-line metallization, which primarily serve as diffusion barriers to prevent contamination, also play a role in mitigating electromigration in the underlying conductive material. Stress gradients can be generated in copper metallization due to the conditions associated with the capping process. To study the effects of deposition and subsequent annealing on the mechanical response of copper films with various capping schemes, we employed a combination of conventional and glancing incidence X-ray diffraction techniques to quantify the stress gradient maxima. The Cu films with dielectric caps, such as silicon nitride, can exhibit large gradients that decrease slightly with thermal cycling. However, Co and TaN-based metallic capping layers create significantly lower stress gradient maxima in copper features both before and after annealing. The different evolution of stress gradients in Cu films with dielectric and metallic caps due to thermal cycling reveals the interaction of dislocation-mediated, plastic deformation with the cap/Cu interface.

  15. Highly doped layer for tunnel junctions in solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Fetzer, Christopher M.

    2017-08-01

    A highly doped layer for interconnecting tunnel junctions in multijunction solar cells is presented. The highly doped layer is a delta doped layer in one or both layers of a tunnel diode junction used to connect two or more p-on-n or n-on-p solar cells in a multijunction solar cell. A delta doped layer is made by interrupting the epitaxial growth of one of the layers of the tunnel diode, depositing a delta dopant at a concentration substantially greater than the concentration used in growing the layer of the tunnel diode, and then continuing to epitaxially grow the remaining tunnel diode.

  16. Effect of non-strained capping layer on excess stress in strained layers

    Institute of Scientific and Technical Information of China (English)

    金智; 杨树人; 马春生; 安海岩; 王本忠; 刘式墉

    1999-01-01

    The effects of the capping-layer thickness and the discrepancy of the numbers of misfit dislocations at the upper and lower interfaces in capped layer on the excess stress are considered. Based on this, the formulae of excess stresses for single- and double-kink models are modified and a new formula is derived, which unifies single- and doublekink models and is valid for arbitrary capping-layer thickness. It is useful to complete the description of the formation and motion of misfit dislocations in strained layers.

  17. Selective layer disordering in III-nitrides with a capping layer

    Science.gov (United States)

    Wierer, Jr., Jonathan J.; Allerman, Andrew A.

    2016-06-14

    Selective layer disordering in a doped III-nitride superlattice can be achieved by depositing a dielectric capping layer on a portion of the surface of the superlattice and annealing the superlattice to induce disorder of the layer interfaces under the uncapped portion and suppress disorder of the interfaces under the capped portion. The method can be used to create devices, such as optical waveguides, light-emitting diodes, photodetectors, solar cells, modulators, laser, and amplifiers.

  18. Giant interfacial perpendicular magnetic anisotropy in MgO/CoFe/capping layer structures

    Science.gov (United States)

    Peng, Shouzhong; Zhao, Weisheng; Qiao, Junfeng; Su, Li; Zhou, Jiaqi; Yang, Hongxin; Zhang, Qianfan; Zhang, Youguang; Grezes, Cecile; Amiri, Pedram Khalili; Wang, Kang L.

    2017-02-01

    Magnetic tunnel junction based on the CoFeB/MgO/CoFeB structures is of great interest due to its application in the spin-transfer-torque magnetic random access memory (STT-MRAM). Large interfacial perpendicular magnetic anisotropy (PMA) is required to achieve high thermal stability. Here, we use the first-principles calculations to investigate the magnetic anisotropy energy (MAE) of the MgO/CoFe/capping layer structures, where the capping materials include 5d metals Hf, Ta, Re, Os, Ir, Pt, and Au and 6p metals Tl, Pb, and Bi. We demonstrate that it is feasible to enhance PMA by using proper capping materials. Relatively large PMA is found in the structures with the capping materials of Hf, Ta, Os, Ir, and Pb. More importantly, the MgO/CoFe/Bi structure gives rise to giant PMA (6.09 mJ/m2), which is about three times larger than that of the MgO/CoFe/Ta structure. The origin of the MAE is elucidated by examining the contributions to MAE from each atomic layer and orbital. These findings provide a comprehensive understanding of the PMA and point towards the possibility to achieve the advanced-node STT-MRAM with high thermal stability.

  19. Three-terminal magnetic tunneling junction device with perpendicular anisotropy CoFeB sensing layer

    Energy Technology Data Exchange (ETDEWEB)

    Honjo, H., E-mail: hr-honjou@aist.go.jp; Nebashi, R.; Tokutome, K.; Miura, S.; Sakimura, N.; Sugibayashi, T. [Green Platform Research Laboratories, NEC Corporation, Tsukuba (Japan); Fukami, S.; Kinoshita, K.; Murahata, M.; Kasai, N. [Center for Spintronics Integrated Systems, Tohoku University, Sendai (Japan); Ishihara, K. [Smart Energy Research Laboratories, NEC Corporation, Tsukuba (Japan); Ohno, H. [Center for Spintronics Integrated Systems, Tohoku University, Sendai (Japan); Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, Sendai (Japan); WPI Advanced Institute for Materials Research, Tohoku University, Sendai (Japan)

    2014-05-07

    We demonstrated read and write characteristics of a three terminal memory device with a perpendicular anisotropy-free layer of a strip of [Co/Ni] and a low-switching perpendicular-anisotropy CoFeB/MgO sensing layer. This new design of the cell results in a small cell area. The switching magnetic field of the sensing layer can be decreased by changing sputtering gas for the Ta-cap from Ar to Kr. An electron energy-loss spectroscopy analysis of the cross-section of the magnetic tunneling junction (MTJ) revealed that the boron content in CoFeB with a Kr-sputtered Ta-cap was smaller than that with an Ar-sputtered one. A change in resistance for the MTJ was observed that corresponded to the magnetic switching of the Co/Ni wire and its magnetoresistance ratio and critical current were 90% and 0.8 mA, respectively.

  20. Nanoscale gadolinium oxide capping layers on compositionally variant gate dielectrics

    KAUST Repository

    Alshareef, Husam N.

    2010-11-19

    Metal gate work function enhancement using nanoscale (1.0 nm) Gd2O3 interfacial layers has been evaluated as a function of silicon oxide content in the HfxSiyOz gate dielectric and process thermal budget. It is found that the effective work function tuning by the Gd2O3 capping layer varied by nearly 400 mV as the composition of the underlying dielectric changed from 0% to 100% SiO2, and by nearly 300 mV as the maximum process temperature increased from ambient to 1000 °C. A qualitative model is proposed to explain these results, expanding the existing models for the lanthanide capping layer effect.

  1. GaInN-based tunnel junctions with graded layers

    Science.gov (United States)

    Takasuka, Daiki; Akatsuka, Yasuto; Ino, Masataka; Koide, Norikatsu; Takeuchi, Tetsuya; Iwaya, Motoaki; Kamiyama, Satoshi; Akasaki, Isamu

    2016-08-01

    We demonstrated low-resistivity GaInN-based tunnel junctions using graded GaInN layers. A systematic investigation of the samples grown by metalorganic vapor phase epitaxy revealed that a tunnel junction consisting of a 4 nm both-sides graded GaInN layer (Mg: 1 × 1020 cm-3) and a 2 nm GaN layer (Si: 7 × 1020 cm-3) showed the lowest specific series resistance of 2.3 × 10-4 Ω cm2 at 3 kA/cm2 in our experiment. The InN mole fraction in the 4 nm both-sides graded GaInN layer was changed from 0 through 0.4 to 0. The obtained resistance is comparable to those of standard p-contacts with Ni/Au and MBE-grown tunnel junctions.

  2. Emitter space charge layer transit time in bipolar junction transistors

    Science.gov (United States)

    Rustagi, S. C.; Chattopadhyaya, S. K.

    1981-04-01

    The charge defined emitter space charge layer transit times of double diffused transistors have been calculated using a regional approach, and compared with the corresponding base transit times. The results obtained for emitter space-charge layer transit times have been discussed with reference to the capacitance analysis of Morgan and Smit (1960) for graded p-n junctions.

  3. Fabrication of magnetic tunnel junctions with epitaxial and textured ferromagnetic layers

    Science.gov (United States)

    Chang, Y. Austin; Yang, Jianhua Joshua

    2008-11-11

    This invention relates to magnetic tunnel junctions and methods for making the magnetic tunnel junctions. The magnetic tunnel junctions include a tunnel barrier oxide layer sandwiched between two ferromagnetic layers both of which are epitaxial or textured with respect to the underlying substrate upon which the magnetic tunnel junctions are grown. The magnetic tunnel junctions provide improved magnetic properties, sharper interfaces and few defects.

  4. An analytical model of capped turbulent oscillatory bottom boundary layers

    Science.gov (United States)

    Shimizu, Kenji

    2010-03-01

    An analytical model of capped turbulent oscillatory bottom boundary layers (BBLs) is proposed using eddy viscosity of a quadratic form. The common definition of friction velocity based on maximum bottom shear stress is found unsatisfactory for BBLs under rotating flows, and a possible extension based on turbulent kinetic energy balance is proposed. The model solutions show that the flow may slip at the top of the boundary layer due to capping by the water surface or stratification, reducing the bottom shear stress, and that the Earth's rotation induces current and bottom shear stress components perpendicular to the interior flow with a phase lag (or lead). Comparisons with field and numerical experiments indicate that the model predicts the essential characteristics of the velocity profiles, although the agreement is rather qualitative due to assumptions of quadratic eddy viscosity with time-independent friction velocity and a well-mixed boundary layer. On the other hand, the predicted linear friction coefficients, phase lead, and veering angle at the bottom agreed with available data with an error of 3%-10%, 5°-10°, and 5°-10°, respectively. As an application of the model, the friction coefficients are used to calculate e-folding decay distances of progressive internal waves with a semidiurnal frequency.

  5. Room Temperature Magnetic Barrier Layers in Magnetic Tunnel Junctions

    Energy Technology Data Exchange (ETDEWEB)

    Nelson-Cheeseman, B. B.; Wong, F. J.; Chopdekar, R. V.; Arenholz, E.; Suzuki, Y.

    2010-03-09

    We investigate the spin transport and interfacial magnetism of magnetic tunnel junctions with highly spin polarized LSMO and Fe3O4 electrodes and a ferrimagnetic NiFe2O4 (NFO) barrier layer. The spin dependent transport can be understood in terms of magnon-assisted spin dependent tunneling where the magnons are excited in the barrier layer itself. The NFO/Fe3O4 interface displays strong magnetic coupling, while the LSMO/NFO interface exhibits clear decoupling as determined by a combination of X-ray absorption spectroscopy and X-ray magnetic circular dichroism. This decoupling allows for distinct parallel and antiparallel electrode states in this all-magnetic trilayer. The spin transport of these devices, dominated by the NFO barrier layer magnetism, leads to a symmetric bias dependence of the junction magnetoresistance at all temperatures.

  6. Thermally robust perpendicular Co/Pd-based synthetic antiferromagnetic coupling enabled by a W capping or buffer layer.

    Science.gov (United States)

    Lee, Ja-Bin; An, Gwang-Guk; Yang, Seung-Mo; Park, Hae-Soo; Chung, Woo-Seong; Hong, Jin-Pyo

    2016-02-18

    Perpendicularly magnetized tunnel junctions (p-MTJs) that contain synthetic antiferromagnetic (SAF) frames show promise as reliable building blocks to meet the demands of perpendicular magnetic anisotropy (PMA)-based spintronic devices. In particular, Co/Pd multilayer-based SAFs have been widely employed due to their outstanding PMA features. However, the widespread utilization of Co/Pd multilayer SAFs coupled with an adjacent CoFeB reference layer (RL) is still a challenge due to the structural discontinuity or intermixing that occurs during high temperature annealing. Thus, we address the thermally robust characteristics of Co/Pd multilayer SAFs by controlling a W layer as a potential buffer or capping layer. The W-capped Co/Pd multilayer SAF, which acts as a pinning layer, exhibited a wide-range plateau with sharp spin-flip and near-zero remanence at the zero field. Structural analysis of the W-capped multilayer SAF exhibited single-crystal-like c-axis oriented crystalline features after annealing at 400 °C, thereby demonstrating the applicability of these frames. In addition, when the W layer serving as a buffer layer in the Co/Pd multilayer SAF was coupled with a conventional CoFeB RL, higher annealing stability up to 425 °C and prominent antiferromagnetic coupling behavior were obtained.

  7. pressure distribution in a layered reservoir with gas-cap and bottom ...

    African Journals Online (AJOL)

    2012-07-02

    Jul 2, 2012 ... Oil production from a layered reservoir with a top gas cap and bottom water acting simultaneously poses serious ... voir fluid is produced (water-flooding or an enhanced recovery scheme), detailed layer information enables.

  8. Investigating the effects of capping layer on optical gain of nitride based semiconductor nanostructure lasers

    Science.gov (United States)

    Annabi Milani, E.; Mohadesi, V.; Asgari, A.

    2017-04-01

    In this study, the effects of GaN capping layer on the behaviour of AlGaN/GaN nanostructure based laser is considered. We have employed the self-consistent solution of Poisson and Schrodinger equations for calculation of the energy levels, wave functions and conduction and valance bands profile. The impact of different thicknesses of the capping layer has been studied for sheet carrier density, then on optical gain. The results indicate that, by increasing the thickness of the cap layer, the optical gain decreases.

  9. The influence of capping layers on pore formation in Ge during ion implantation

    Science.gov (United States)

    Alkhaldi, H. S.; Tran, Tuan T.; Kremer, F.; Williams, J. S.

    2016-12-01

    Ion induced porosity in Ge has been investigated with and without a cap layer for two ion species, Ge and Sn, with respect to ion fluence and temperature. Results without a cap are consistent with a previous work in terms of an observed ion fluence and temperature dependence of porosity, but with a clear ion species effect where heavier Sn ions induce porosity at lower temperature (and fluence) than Ge. The effect of a cap layer is to suppress porosity for both Sn and Ge at lower temperatures but in different temperatures and fluence regimes. At room temperature, a cap does not suppress porosity and results in a more organised pore structure under conditions where sputtering of the underlying Ge does not occur. Finally, we observed an interesting effect in which a barrier layer of a-Ge that is denuded of pores formed directly below the cap layer. The thickness of this layer (˜ 8 nm) is largely independent of ion species, fluence, temperature, and cap material, and we suggest that this is due to viscous flow of a-Ge under ion irradiation and wetting of the cap layer to minimize the interfacial free energy.

  10. Increased efficiency in pn-junction PbS QD solar cells via NaHS treatment of the p-type layer

    Science.gov (United States)

    Speirs, Mark J.; Balazs, Daniel M.; Dirin, Dmitry N.; Kovalenko, Maksym V.; Loi, Maria Antonietta

    2017-03-01

    Lead sulfide quantum dot (PbS QD) solar cell efficiencies have improved rapidly over the past years due in large part to intelligent band alignment considerations. A pn-junction can be formed by connecting PbS layers with contrasting ligands. However, the resulting doping concentrations are typically low and cannot be effectively controlled. Here, we present a method of chemically p-doping films of thiol capped PbS QDs. P-n junction solar cells with increased doping in the p-type layer show improved short circuit current and fill factor, leading to an improvement in the power conversion efficiency from 7.1% to 7.6%. By examining Schottky diodes, field effect transistors, and the absorption spectra of treated and untreated PbS QDs, we show that the improved efficiency is due to the increased doping concentration in the thiol capped QD layer and to denser packing of the PbS QD film.

  11. Alpha-catenin-Dependent Recruitment of the Centrosomal Protein CAP350 to Adherens Junctions Allows Epithelial Cells to Acquire a Columnar Shape

    Science.gov (United States)

    Zurbano, Angel; Formstecher, Etienne; Martinez-Morales, Juan R.; Bornens, Michel; Rios, Rosa M.

    2015-01-01

    Epithelial morphogenesis involves a dramatic reorganisation of the microtubule cytoskeleton. How this complex process is controlled at the molecular level is still largely unknown. Here, we report that the centrosomal microtubule (MT)-binding protein CAP350 localises at adherens junctions in epithelial cells. By two-hybrid screening, we identified a direct interaction of CAP350 with the adhesion protein α-catenin that was further confirmed by co-immunoprecipitation experiments. Block of epithelial cadherin (E-cadherin)-mediated cell-cell adhesion or α-catenin depletion prevented CAP350 localisation at cell-cell junctions. Knocking down junction-located CAP350 inhibited the establishment of an apico-basal array of microtubules and impaired the acquisition of columnar shape in Madin-Darby canine kidney II (MDCKII) cells grown as polarised epithelia. Furthermore, MDCKII cystogenesis was also defective in junctional CAP350-depleted cells. CAP350-depleted MDCKII cysts were smaller and contained either multiple lumens or no lumen. Membrane polarity was not affected, but cortical microtubule bundles did not properly form. Our results indicate that CAP350 may act as an adaptor between adherens junctions and microtubules, thus regulating epithelial differentiation and contributing to the definition of cell architecture. We also uncover a central role of α-catenin in global cytoskeleton remodelling, in which it acts not only on actin but also on MT reorganisation during epithelial morphogenesis. PMID:25764135

  12. Damage of multilayer optics with varying capping layers induced by focused extreme ultraviolet beam

    Energy Technology Data Exchange (ETDEWEB)

    Jody Corso, Alain; Nicolosi, Piergiorgio; Nardello, Marco; Guglielmina Pelizzo, Maria [National Research Council of Italy, Institute for Photonics and Nanotechnology, via Trasea 7, 35131 Padova (Italy); Department of Information Engineering, University of Padova, via Gradenigo 6/B, 35131 Padova (Italy); Zuppella, Paola [National Research Council of Italy, Institute for Photonics and Nanotechnology, via Trasea 7, 35131 Padova (Italy); Barkusky, Frank [Laser-Laboratorium Goettingen e.V, Goettingen (Germany); KLA-Tencor, 5 Technology Dr., Milpitas, California 95035 (United States); Mann, Klaus; Mueller, Matthias [Laser-Laboratorium Goettingen e.V, Goettingen (Germany)

    2013-05-28

    Extreme ultraviolet Mo/Si multilayers protected by capping layers of different materials were exposed to 13.5 nm plasma source radiation generated with a table-top laser to study the irradiation damage mechanism. Morphology of single-shot damaged areas has been analyzed by means of atomic force microscopy. Threshold fluences were evaluated for each type of sample in order to determine the capability of the capping layer to protect the structure underneath.

  13. Electrochemistry of ATP-capped silver nanoparticles in layer-by-layer multilayer films

    Science.gov (United States)

    Singh, Poonam; Solomon, Virgil C.; Buttry, Daniel A.

    2014-07-01

    Colloidal silver nanoparticles (Ag NPs) capped with adenosine triphosphate (ATP) were prepared using borohydride reduction of Ag+ in the presence of ATP. Subsequent characterization was done using transmission electron microscopy/high-resolution transmission electron microscopy, energy-dispersive X-ray spectroscopy, and non-contact atomic force microscopy (NcAFM) confirming the size and composition of the Ag NPs. This report focuses on two topics: (1) the change in NP size and properties as a function of molar ratios of Ag+ to ATP capping ligand to BH4 - reductant, and (2) the electrochemical behavior of the NPs in layer-by-layer (LbL) multilayer films. On the basis of electrostatic interaction between negatively charged phosphate groups on Ag NPs and positively charged poly(diallyldimethylammonium) hydrochloride, NPs were immobilized on 3-mercaptopropionic acid (MCP)-functionalized gold electrodes using LbL assembly method followed by characterization of the film using NcAFM. Furthermore, the redox chemistry for phase transformations of immobilized Ag NPs to AgCl or Ag2O in multilayer films was examined using cyclic voltammetry (CV) in NaOH and NaCl solutions. A non-linear increase of charge with an increase in the number of bilayers in the film was observed up to five layers. Underpotential deposition of Pb on multilayer film of Ag NPs confirmed the presence of Ag in multilayer films. The stability of the LbL film toward electrochemical cycling to higher potentials (i.e., +0.8 V) in NaOH solutions was evaluated.

  14. Magnetic properties of ultrathin Ni81Fe19 films with Ta and Ru capping layers.

    Science.gov (United States)

    Kezilebieke, S; Ali, M; Shadeke, B; Gunnella, R

    2013-11-27

    Magnetic properties of Ni81Fe19 (permalloy) ultrathin films with Ru and Ta capping layers (CLs) were investigated for applications to magnetic random access memory units (MRAM). The sample structure, which simulated an MRAM free layer, is Si- sub./SiO2/Ni81Fe19/Ru(Ta). The Ni81Fe19 thin films less than 3 nm thick with Ru CL show low coercive fields compared with the Ta capping layer. Both systems showed loss of momentum equivalent to magnetically dead layers of thickness (δ) ~0.6 nm for Ru cap layer and ~1.4 nm for Ta cap layer, respectively. Moreover, after annealing the thicknesses are slightly increased to an equivalent magnetic dead layer thickness of δ ~0:84 nm and ~1.80 nm for Ru and Ta CL, respectively. Our calculations showed that the presence of only 11% Ta concentration at the interface reduced the Ni momentum to zero, with the Ni–Ta coupling being anti-ferromagnetic; while 50% Ru intermixing at the interface reduced the Ni momentum to zero with the coupling between Ru and Ni being ferromagnetic. To find out more about the intermixing at the interface, the composition and chemical states were characterized by the x-ray photoelectron spectroscopy and peak decomposition technique. The result showed that the peak positions were different from the pure metallic case at the interface region, mainly because of the intermixing between two layers. In conclusion, the Ru capping layer might be important for MRAM use in terms of low coercive field and small δ layer thickness if compared with the Ta capping layer.

  15. Magnetic properties of ultrathin Ni81Fe19 films with Ta and Ru capping layers

    Science.gov (United States)

    Kezilebieke, S.; Ali, M.; Shadeke, B.; Gunnella, R.

    2013-11-01

    Magnetic properties of Ni81Fe19 (permalloy) ultrathin films with Ru and Ta capping layers (CLs) were investigated for applications to magnetic random access memory units (MRAM). The sample structure, which simulated an MRAM free layer, is Si- sub./SiO2/Ni81Fe19/Ru(Ta). The Ni81Fe19 thin films less than 3 nm thick with Ru CL show low coercive fields compared with the Ta capping layer. Both systems showed loss of momentum equivalent to magnetically dead layers of thickness (δ) ˜0.6 nm for Ru cap layer and ˜1.4 nm for Ta cap layer, respectively. Moreover, after annealing the thicknesses are slightly increased to an equivalent magnetic dead layer thickness of δ ˜ 0.84 nm and ˜1.80 nm for Ru and Ta CL, respectively. Our calculations showed that the presence of only 11% Ta concentration at the interface reduced the Ni momentum to zero, with the Ni-Ta coupling being anti-ferromagnetic; while 50% Ru intermixing at the interface reduced the Ni momentum to zero with the coupling between Ru and Ni being ferromagnetic. To find out more about the intermixing at the interface, the composition and chemical states were characterized by the x-ray photoelectron spectroscopy and peak decomposition technique. The result showed that the peak positions were different from the pure metallic case at the interface region, mainly because of the intermixing between two layers. In conclusion, the Ru capping layer might be important for MRAM use in terms of low coercive field and small δ layer thickness if compared with the Ta capping layer.

  16. Electron transport in molecular junctions with graphene as protecting layer

    Energy Technology Data Exchange (ETDEWEB)

    Hüser, Falco; Solomon, Gemma C., E-mail: gsolomon@nano.ku.dk [Nano-Science Center and Department of Chemistry, University of Copenhagen, 2100 København Ø (Denmark)

    2015-12-07

    We present ab initio transport calculations for molecular junctions that include graphene as a protecting layer between a single molecule and gold electrodes. This vertical setup has recently gained significant interest in experiment for the design of particularly stable and reproducible devices. We observe that the signals from the molecule in the electronic transmission are overlayed by the signatures of the graphene sheet, thus raising the need for a reinterpretation of the transmission. On the other hand, we see that our results are stable with respect to various defects in the graphene. For weakly physiosorbed molecules, no signs of interaction with the graphene are evident, so the transport properties are determined by offresonant tunnelling between the gold leads across an extended structure that includes the molecule itself and the additional graphene layer. Compared with pure gold electrodes, calculated conductances are about one order of magnitude lower due to the increased tunnelling distance. Relative differences upon changing the end group and the length of the molecule on the other hand, are similar.

  17. Influence of capping layers on CoFeB anisotropy and damping

    Energy Technology Data Exchange (ETDEWEB)

    Natarajarathinam, A. [Center for Materials for Information Technology (MINT Center), University of Alabama, Tuscaloosa, Alabama 35487 (United States); Department of Electrical and Computer Engineering, University of Alabama, Tuscaloosa, Alabama 35487 (United States); Tadisina, Z. R.; Gupta, S. [Center for Materials for Information Technology (MINT Center), University of Alabama, Tuscaloosa, Alabama 35487 (United States); Department of Metallurgical and Materials Engineering, University of Alabama, Tuscaloosa, Alabama 35487 (United States); Mewes, T. [Center for Materials for Information Technology (MINT Center), University of Alabama, Tuscaloosa, Alabama 35487 (United States); Department of Physics and Astronomy, University of Alabama, Tuscaloosa, Alabama 35487 (United States); Watts, S.; Chen, E. [Grandis Inc., Milpitas, California 95035 (United States)

    2012-09-01

    Magnetic behavior of CoFeB at various thicknesses ranging from 2 nm to 8 nm capped with different materials, such as MgO, Ta, Ru, and V have been studied. The films were sputter-deposited and subsequently characterized by magnetometry and broadband ferromagnetic resonance (FMR). There are magnetically dead layers at the interface observed with Ru and Ta capping layers, while MgO and V have almost no effect on the magnetization of the CoFeB. As the ferromagnetic layer is made thinner, the effective magnetization decreases, indicating an interfacial perpendicular anisotropy. Particularly in the case of MgO, V/Ru, and V/Ta capping layers, interfacial perpendicular anisotropy is induced in CoFeB, and the Gilbert damping parameter is also reduced. The origin of this perpendicular magnetic anisotropy (PMA) is understood to be caused by the interface anisotropy between the free layer and the capping layer. The effect of post-deposition annealing and CoFeB thickness on the anisotropy and damping of V/Ta capped samples are reported. Doping CoFeB with vanadium (V) greatly reduced the 4{pi}M{sub s} and 4{pi}M{sub eff} values, resulting in an effective increase in the PMA.

  18. Junction conditions in quadratic gravity: thin shells and double layers

    CERN Document Server

    Reina, Borja; Vera, Raül

    2015-01-01

    The junction conditions for the most general gravitational theory with a Lagrangian containing terms quadratic in the curvature are derived. We include the cases with a possible concentration of matter on the joining hypersurface -termed as thin shells, domain walls or braneworlds in the literature- as well as the proper matching conditions where only finite jumps of the energy-momentum tensor are allowed. In the latter case we prove that the matching conditions are more demanding than in General Relativity. In the former case, we show that generically the shells/domain walls are of a new kind because they possess, in addition to the standard energy-momentum tensor, a double layer energy-momentum contribution which actually induces an external energy flux vector and an external scalar pressure/tension on the shell. We prove that all these contributions are necessary to make the entire energy-momentum tensor divergence-free, and we present the field equations satisfied by these energy-momentum quantities. The ...

  19. Junction conditions in quadratic gravity: thin shells and double layers

    Science.gov (United States)

    Reina, Borja; Senovilla, José M. M.; Vera, Raül

    2016-05-01

    The junction conditions for the most general gravitational theory with a Lagrangian containing terms quadratic in the curvature are derived. We include the cases with a possible concentration of matter on the joining hypersurface—termed as thin shells, domain walls or braneworlds in the literature—as well as the proper matching conditions where only finite jumps of the energy-momentum tensor are allowed. In the latter case we prove that the matching conditions are more demanding than in general relativity. In the former case, we show that generically the shells/domain walls are of a new kind because they possess, in addition to the standard energy-momentum tensor, a double layer energy-momentum contribution which actually induces an external energy flux vector and an external scalar pressure/tension on the shell. We prove that all these contributions are necessary to make the entire energy-momentum tensor divergence-free, and we present the field equations satisfied by these energy-momentum quantities. The consequences of all these results are briefly analyzed.

  20. Direct growth of multilayer graphene by precipitation using W capping layer

    Science.gov (United States)

    Yamada, Jumpei; Ueda, Yuki; Maruyama, Takahiro; Naritsuka, Shigeya

    2016-10-01

    In this study, the direct growth of multilayer graphene from amorphous carbon on a sapphire (0001) substrate by precipitation using a nickel catalyst layer and a tungsten capping layer was examined. The findings revealed that a tungsten carbide layer was formed on top of the catalyst, and this suppressed the diffusion of carbon atoms upwards towards the surface. This caused the graphene layer to precipitate below the catalyst layer rather than above it. Under optimized growth conditions, Raman spectroscopy indicated that a high-quality graphene layer was formed with a low D/G peak intensity ratio of 0.10.

  1. Corrosion resistance of pseudo-spin-valve systems: Pd vs. Ta capping layers

    Science.gov (United States)

    Matthes, P.; Albrecht, M.

    2016-08-01

    An analysis of both magnetic and magneto-transport properties in dependence of the corrosion resistance is presented for a pseudo-spin-valve (PSV) system with different capping layers. The magnetoresistive part of the sample consists of a [Co/Pd] multilayer with perpendicular magnetic anisotropy and a single Co layer with in-plane easy axis separated by a Cu spacer, forming a PSV system with crossed anisotropies. The samples were annealed under ambient conditions up to temperatures of 200 °C to facilitate the corrosion process. Whereas the magnetic properties are stable up to 100 °C independent of the capping layer, the giant magnetoresistance (GMR) effect is more sensitive on annealing. In case of Pd as capping layer, the GMR of the pseudo-spin-valve considerably degrades already after annealing at 60 °C, whereby even by thickening of the Pd layer up to 10 nm, no pronounced improvement was obtained. On the contrary, for Ta as capping layer the GMR ratio stays constant upon heating up to 100 °C, followed by a comparable moderate decay for even higher annealing temperatures.

  2. Proximity Effect in BSCCO Intrinsic Josephson Junctions Contacted with a Normal Metal Layer

    Science.gov (United States)

    Suzuki, Minoru; Koizumi, Masayuki; Ohmaki, Masayuki; Kakeya, Itsuhiro; Shukrinov, Yu. M.

    Superconductivity proximity effect is numerically evaluated based on McMillan's tunneling proximity model for a sandwich of a normal metal layer on top of the surface superconducting layer of intrinsic Josephson junctions in a Bi2Sr2CaCu2O8+δ (BSCCO) crystal. Due to the very thin thickness of 0.3 nm of the superconducting layer in IJJs, the surface layer is subject to influence of the proximity effect when the top layer is contacted with a normal metal layer. The effect manifests itself as a significant change in the characteristics of the IJJ surface Josephson junction. It is found that when the superconducting layer thickness is smaller than 0.6 nm, the pair potential reduces significantly, leading to an almost complete suppression of the critical Josephson current density for the surface junction. This result can partly explain the experimental results on the IJJ characteristics of a mesa type structure.

  3. Prolonged reorganization of thiol-capped Au nanoparticles layered structures

    Directory of Open Access Journals (Sweden)

    Sarathi Kundu

    2013-09-01

    Full Text Available Prolonged reorganization behaviour of mono-, di-, tri- and multi-layer films of Au nanoparticles prepared by Langmuir-Blodgett method on hydrophobic Si(001 substrates have been studied by using X-ray scattering techniques. Out-of-plane study shows that although at the initial stage the reorganization occurs through the compaction of the films keeping the layered structure unchanged but finally all layered structures modify to monolayer structure. Due to this reorganization the Au density increases within the nanometer thick films. In-plane study shows that inside the reorganized films Au nanoparticles are distributed randomly and the particle size modifies as the metallic core of Au nanoparticles coalesces.

  4. Synthesis of magnetic tunnel junctions with full in situ atomic layer and chemical vapor deposition processes

    Energy Technology Data Exchange (ETDEWEB)

    Mantovan, R., E-mail: roberto.mantovan@mdm.imm.cnr.it [Laboratorio MDM, IMM-CNR, Via C. Olivetti 2, 20864 Agrate Brianza (Italy); Vangelista, S.; Kutrzeba-Kotowska, B.; Cocco, S.; Lamperti, A.; Tallarida, G. [Laboratorio MDM, IMM-CNR, Via C. Olivetti 2, 20864 Agrate Brianza (MB) (Italy); Mameli, D. [Laboratorio MDM, IMM-CNR, Via C. Olivetti 2, 20864 Agrate Brianza (Italy); Dipartimento di Scienze Chimiche, Universita di Cagliari, Cittadella Universitaria, 09042 Monserrato, Cagliari (Italy); Fanciulli, M. [Laboratorio MDM, IMM-CNR, Via C. Olivetti 2, 20864 Agrate Brianza (Italy); Dipartimento di Scienza dei Materiali, Universita degli studi Milano-Bicocca, Via R Cozzi 53, 20125 Milano (Italy)

    2012-05-01

    Magnetic tunnel junctions, i.e. the combination of two ferromagnetic electrodes separated by an ultrathin tunnel oxide barrier, are core elements in a large variety of spin-based devices. We report on the use of combined chemical vapor and atomic layer deposition processes for the synthesis of magnetic tunnel junctions with no vacuum break. Structural, chemical and morphological characterizations of selected ferromagnetic and oxide layers are reported, together with the evidence of tunnel magnetoresistance effect in patterned Fe/MgO/Co junctions.

  5. Silicon/Organic Hybrid Solar Cells with 16.2% Efficiency and Improved Stability by Formation of Conformal Heterojunction Coating and Moisture-Resistant Capping Layer.

    Science.gov (United States)

    He, Jian; Gao, Pingqi; Yang, Zhenhai; Yu, Jing; Yu, Wei; Zhang, Yu; Sheng, Jiang; Ye, Jichun; Amine, Joseph Chen; Cui, Yi

    2017-02-02

    Silicon/poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) heterojunction solar cells with 16.2% efficiency and excellent stability are fabricated on pyramid-textured silicon substrates by applying a water-insoluble ester as capping layer. It shows that conformal coating of PEDOT:PSS on textured silicon can greatly improve the junction quality with the main stability failure routes related to the moisture-induced poly(3,4-ethylenedioxythiophene) aggregations and the tunneling silicon oxide autothickening.

  6. Ultraviolet weathering of HDPE/wood-flour composites coextruded with a clear HDPE cap layer

    Science.gov (United States)

    Laurent M. Matuana; Shan Jin; Nicole M. Stark

    2011-01-01

    This study examined the effect coextruding a clear HDPE cap layer onto HDPE/wood-flour composites has on the discoloration of coextruded composites exposed to accelerated UV tests. Chroma meter, FTIRATR, XPS, SEM, and UV vis measurements accounted for the analysis of discoloration, functional groups, and degree of oxidation of both uncapped (control) and coextruded...

  7. Protective capping and surface passivation of III-V nanowires by atomic layer deposition

    Directory of Open Access Journals (Sweden)

    Veer Dhaka

    2016-01-01

    Full Text Available Low temperature (∼200 °C grown atomic layer deposition (ALD films of AlN, TiN, Al2O3, GaN, and TiO2 were tested for protective capping and surface passivation of bottom-up grown III-V (GaAs and InP nanowires (NWs, and top-down fabricated InP nanopillars. For as-grown GaAs NWs, only the AlN material passivated the GaAs surface as measured by photoluminescence (PL at low temperatures (15K, and the best passivation was achieved with a few monolayer thick (2Å film. For InP NWs, the best passivation (∼2x enhancement in room-temperature PL was achieved with a capping of 2nm thick Al2O3. All other ALD capping layers resulted in a de-passivation effect and possible damage to the InP surface. Top-down fabricated InP nanopillars show similar passivation effects as InP NWs. In particular, capping with a 2 nm thick Al2O3 layer increased the carrier decay time from 251 ps (as-etched nanopillars to about 525 ps. Tests after six months ageing reveal that the capped nanostructures retain their optical properties. Overall, capping of GaAs and InP NWs with high-k dielectrics AlN and Al2O3 provides moderate surface passivation as well as long term protection from oxidation and environmental attack.

  8. Protective capping and surface passivation of III-V nanowires by atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Dhaka, Veer, E-mail: veer.dhaka@aalto.fi; Perros, Alexander; Kakko, Joona-Pekko; Haggren, Tuomas; Lipsanen, Harri [Department of Micro- and Nanosciences, Micronova, Aalto University, P.O. Box 13500, FI-00076 (Finland); Naureen, Shagufta; Shahid, Naeem [Research School of Physics & Engineering, Department of Electronic Materials Engineering, Australian National University, Canberra ACT 2601 (Australia); Jiang, Hua; Kauppinen, Esko [Department of Applied Physics and Nanomicroscopy Center, Aalto University, P.O. Box 15100, FI-00076 (Finland); Srinivasan, Anand [School of Information and Communication Technology, KTH Royal Institute of Technology, Electrum 229, S-164 40 Kista (Sweden)

    2016-01-15

    Low temperature (∼200 °C) grown atomic layer deposition (ALD) films of AlN, TiN, Al{sub 2}O{sub 3}, GaN, and TiO{sub 2} were tested for protective capping and surface passivation of bottom-up grown III-V (GaAs and InP) nanowires (NWs), and top-down fabricated InP nanopillars. For as-grown GaAs NWs, only the AlN material passivated the GaAs surface as measured by photoluminescence (PL) at low temperatures (15K), and the best passivation was achieved with a few monolayer thick (2Å) film. For InP NWs, the best passivation (∼2x enhancement in room-temperature PL) was achieved with a capping of 2nm thick Al{sub 2}O{sub 3}. All other ALD capping layers resulted in a de-passivation effect and possible damage to the InP surface. Top-down fabricated InP nanopillars show similar passivation effects as InP NWs. In particular, capping with a 2 nm thick Al{sub 2}O{sub 3} layer increased the carrier decay time from 251 ps (as-etched nanopillars) to about 525 ps. Tests after six months ageing reveal that the capped nanostructures retain their optical properties. Overall, capping of GaAs and InP NWs with high-k dielectrics AlN and Al{sub 2}O{sub 3} provides moderate surface passivation as well as long term protection from oxidation and environmental attack.

  9. Investigating the effect of capping layers on final thin film morphology after a dewetting process

    Science.gov (United States)

    White, Benjamin C.

    Nanoparticles on a substrate have numerous applications in nanotechnology, from enhancements to solar cell efficiency to improvements in carbon nanotube growth. Producing nanoparticles in a cheap fashion with some control over size and spacing is difficult to do, but desired. This work presents a novel method for altering the radius and pitch distributions of nickel and gold nanoparticles in a scalable fashion. The introduction of alumina capping layers to thin nickel films during a pulsed laser-induced dewetting process has yielded reductions in the mean and standard deviation of radii and pitch for dewet nanoparticles. Carbon nanotube mats grown on these samples show a much thicker mat for the capped case. The same capping layers have produced an opposite effect of increased nanoparticle size and spacing during a solid state dewetting process of a gold film. These results also show a decrease in the magnitude of the effect as the capping layer thickness increases. Since the subject of research interest for using these nanoparticles has shifted towards producing ordered arrays with size and spacing control, the uncertainty in the values of these distributions needs to be quantified for any form of meaningful comparison to be made between fabrication methods. Presented here is a first step in the uncertainty analysis of such samples via synthetic images producing error distributions.

  10. Hydrogen-induced electrical and optical switching in Pd capped Pr nanoparticle layers

    Indian Academy of Sciences (India)

    Shubhra Kala; B R Mehta

    2008-06-01

    In this study, modification in the properties of hydrogen-induced switchable mirror based on Pr nanoparticle layers is reported. The reversible changes in hydrogen-induced electrical and optical properties of Pd capped Pr nanoparticle layers have been studied as a function of hydrogenation time and compared with the conventional device based on Pd capped Pr thin films. Faster electrical and optical response, higher optical contrast and presence of single absorption edge corresponding to Pr trihydride state in hydrogen loaded state have been observed in the case of nanoparticle layers. The improvement in the electrical and optical properties have been explained in terms of blue shift in the absorption edge due to quantum confinement effect, larger number of interparticle boundaries, presence of defects, loose adhesion to the substrate and enhanced surface to volume atom ratio at nanodimension.

  11. Effect of Anti-Diffusion Oxide Layer on Enhanced Thermal Stability of Magnetic Tunnel Junctions

    Institute of Scientific and Technical Information of China (English)

    ZHANG Zong-Zhi; ZHAO Hui; Cardoso S.; Freitas P. P.

    2006-01-01

    @@ Magnetic tunnel junctions (MTJs) with one proper oxidized FeOx layer placed between the Al oxide barrier and the top CoFe pinned layer show large tunnelling-magnetoresistance (TMR) signals as high as 39% after anneal at 380℃ .

  12. Study of the Electroless Deposition of Ni for Betavoltaic Battery Using PN Junction without Seed Layer

    Directory of Open Access Journals (Sweden)

    Jin Joo Kim

    2015-01-01

    Full Text Available The method and conditions of Ni plating were optimized to maximize the output of a betavoltaic battery using radioactive 63Ni. The difference of the short circuit currents between the pre- and postdeposition of 63Ni on the PN junction was 90 nA at the I-V characteristics. It is suspected that the beta rays emitted from 63Ni did not deeply penetrate into the PN junction due to a Ni seed layer with a thickness of 500 Å. To increase the penetration of the beta rays, electroless Ni plating was carried out on the PN junction without a seed layer. To establish the electroless coating conditions for 63Ni, nonradioactive Ni was deposited onto a Si wafer without flaws on the surface. This process can be applied for electroless Ni plating on a PN junction semiconductor using radioactive 63Ni in further studies.

  13. Charging of Superconducting Layers and Novel Type of Hysteresis in Coupled Josephson Junctions

    OpenAIRE

    Shukrinov, Yu M.; Gaafar, Ma. A.

    2011-01-01

    A manifestation of a novel type of hysteresis related to the parametric resonance in the system of coupled Josephson junctions is demonstrated. Opposite to McCumber and Steward hysteresis, we find that the width of this hysteresis is inversely proportional to the McCumber parameter and depends also on coupling between junctions and the boundary conditions. An investigation of time dependence of the electric charge in superconducting layers allow us to explain the origin of this hysteresis by ...

  14. Development of the Convective Boundary Layer Capping with a Thick Neutral Layer in Badanjilin: Observations and Simulations

    Institute of Scientific and Technical Information of China (English)

    HAN Bo; L(U) Shihua; AO Yinhuan

    2012-01-01

    In this study,the development of a convective boundary layer (CBL) in the Badanjilin region was investigated by comparing the observation data of two cases.A deep neutral layer capped a CBL that occurred on 30 August 2009.This case was divided into five sublayers from the surface to higher atmospheric elevations:surface layer,mixed layer,inversion layer,neutral layer,and sub-inversion layer.The development process of the CBL was divided into three stages:S1,S2,and S3.This case was quite different from the development of the three-layer CBL observed on 31 August 2009 because the mixed layer of the five-layer CBL (CBL5) eroded the neutral layer during S2.The specific initial structure of the CBL5 was correlated to the synoptic background of atmosphere during nighttime.The three-stage development process of the CBL5 was confirmed by six simulations using National Center for Atmospheric Research (USA) large-eddy simulation (NCAR-LES),and some of its characteristics are presented in detail.

  15. Aryl end-capped quaterthiophenes applied as anode interfacial layers in inverted organic solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Heiskanen, Juha P., E-mail: juha.heiskanen@oulu.fi [Department of Chemistry, P.O. Box 3000, FI-90014 University of Oulu (Finland); Manninen, Venla M. [Department of Chemistry and Bioengineering, Tampere University of Technology, P.O. Box 541, FI-33101 Tampere (Finland); Pankov, Dmitri [Department of Chemistry, P.O. Box 3000, FI-90014 University of Oulu (Finland); Omar, Walaa A.E. [Department of Chemistry, P.O. Box 3000, FI-90014 University of Oulu (Finland); Department of Chemistry and Mathematics, Faculty of Petroleum and Mining Engineering, Suez University, Suez 43721 (Egypt); Kastinen, Tuuva; Hukka, Terttu I.; Lemmetyinen, Helge J. [Department of Chemistry and Bioengineering, Tampere University of Technology, P.O. Box 541, FI-33101 Tampere (Finland); Hormi, Osmo E.O. [Department of Chemistry, P.O. Box 3000, FI-90014 University of Oulu (Finland)

    2015-01-01

    Four aryl end-capped quaterthiophene derivatives were synthesized and their material properties were studied by computational, spectroscopic, electrochemical, and thermoanalytical methods. Compounds were applied as interfacial layers between the bulk heterojunction active layer and Ag anode in inverted organic solar cells. Results show that p-cyanophenyl end-capped quaterthiophene with hexyl side chains increases both the short circuit current density and power conversion efficiency notably compared to reference interlayer material, tris-(8-hydroxyquinoline)aluminum. The improved cell performance was attributed to the optimal positions of the highest occupied molecular orbital and the lowest unoccupied molecular orbital (LUMO) of this material, relative to those of the photoactive electron donor poly(3-hexylthiophene) and Ag anode, and evenly distributed LUMO. In addition, the use of these materials as an anode interfacial layer increases the absorption of the solar cell, which could contribute to the formation of excitons and additional current production by the cell. - Highlights: • Aryl end-capped oligothiophenes were synthesized in good overall yields. • Materials could be applied as anode interfacial layers in organic solar cells. • Computational, spectroscopic, and electrochemical analyses support conclusions. • Substitution patterns determine HOMO and LUMO levels of interfacial material. • Improved cell performance was attributed mainly to optimal HOMO and LUMO levels.

  16. Slow Manifolds and Multiple Equilibria in Stratocumulus-Capped Boundary Layers

    Directory of Open Access Journals (Sweden)

    Junya Uchida

    2010-12-01

    Full Text Available In marine stratocumulus-capped boundary layers under strong inversions, the timescale for thermodynamic adjustment is roughly a day, much shorter than the multiday timescale for inversion height adjustment. Slow-manifold analysis is introduced to exploit this timescale separation when boundary layer air columns experience only slow changes in their boundary conditions. Its essence is that the thermodynamic structure of the boundary layer remains approximately slaved to its inversion height and the instantaneous boundary conditions; this slaved structure determines the entrainment rate and hence the slow evolution of the inversion height. Slow-manifold analysis is shown to apply to mixed-layer model and large-eddy simulations of an idealized nocturnal stratocumulus- capped boundary layer; simulations with different initial inversion heights collapse onto single relationships of cloud properties with inversion height. Depending on the initial inversion height, the simulations evolve toward a shallow thin-cloud boundary layer or a deep, well-mixed thick cloud boundary layer. In the large-eddy simulations, these evolutions occur on two separate slow manifolds (one of which becomes unstable if cloud droplet concentration is reduced. Applications to analysis of stratocumulus observations and to pockets of open cells and ship tracks are proposed.

  17. Numerical evaluation of monofil and subtle-layered evapotranspiration (ET) landfill caps

    Energy Technology Data Exchange (ETDEWEB)

    Wilson, G.V.; Henley, M.; Valceschini, R.

    1998-01-01

    The US Department of Energy/Nevada Operations Office (DOE/NV) has identified the need to design a low-level waste (LLW) closure cap for the arid conditions at the Nevada Test Site (NTS). As a result of concerns for subsidence impacting the cover, DOE/NV redesigned the LLW cover from one containing a `hard` infiltration barrier that would likely fail, to a `soft` (ET) cover that is sufficiently deep to accommodate the hydrologic problems of subsidence. An ET cover is one that does not contain hydrologic barrier layers but relies on soil-water retention and sufficient thickness to store water until evapotranspiration (ET) can remove the moisture. Subtle layering within an ET cap using the native soil could be environmentally beneficial and cost effective.

  18. Sidewall GaAs tunnel junctions fabricated using molecular layer epitaxy

    Directory of Open Access Journals (Sweden)

    Takeo Ohno and Yutaka Oyama

    2012-01-01

    Full Text Available In this article we review the fundamental properties and applications of sidewall GaAs tunnel junctions. Heavily impurity-doped GaAs epitaxial layers were prepared using molecular layer epitaxy (MLE, in which intermittent injections of precursors in ultrahigh vacuum were applied, and sidewall tunnel junctions were fabricated using a combination of device mesa wet etching of the GaAs MLE layer and low-temperature area-selective regrowth. The fabricated tunnel junctions on the GaAs sidewall with normal mesa orientation showed a record peak current density of 35 000 A cm-2. They can potentially be used as terahertz devices such as a tunnel injection transit time effect diode or an ideal static induction transistor.

  19. Properites of ultrathin films appropriate for optics capping layers in extreme ultraviolet lithography (EUVL)

    Energy Technology Data Exchange (ETDEWEB)

    Bajt, S; Edwards, N V; Madey, T E

    2007-06-25

    The contamination of optical surfaces by irradiation shortens optics lifetime and is one of the main concerns for optics used in conjunction with intense light sources, such as high power lasers, 3rd and 4th generation synchrotron sources or plasma sources used in extreme ultraviolet lithography (EUVL) tools. This paper focuses on properties and surface chemistry of different materials, which as thin layers, could be used as capping layers to protect and extend EUVL optics lifetime. The most promising candidates include single element materials such as ruthenium and rhodium, and oxides such as TiO{sub 2} and ZrO{sub 2}.

  20. Interaction of La2O3 capping layers with HfO2 gate dielectrics

    Science.gov (United States)

    Copel, M.; Guha, S.; Bojarczuk, N.; Cartier, E.; Narayanan, V.; Paruchuri, V.

    2009-11-01

    We report the effect of La2O3 capping layers on HfO2/SiO2/Si dielectrics, proposed for use in threshold voltage tuning of field effect transistors. Depth profiling with medium energy ion scattering shows that an initial surface layer of La2O3 diffuses through the HfO2 at elevated temperatures, ultimately converting some of the thin interfacial SiO2 into a silicate. Core-level photoemission measurements indicate that the additional band-bending induced by the La2O3 only appears after diffusion, and the added charge resides between the HfO2 and the substrate.

  1. Heat Transfer Model of a Small-Scale Waste Glass Melter with Cold Cap Layer

    Energy Technology Data Exchange (ETDEWEB)

    Abboud, Alexander; Guillen, Donna Post; Pokorny, Richard

    2016-09-01

    At the Hanford site in the state of Washington, more than 56 million gallons of radioactive waste is stored in underground tanks. The cleanup plan for this waste is vitrification at the Waste Treatment Plant (WTP), currently under construction. At the WTP, the waste will be blended with glass-forming materials and heated to 1423K, then poured into stainless steel canisters to cool and solidify. A fundamental understanding of the glass batch melting process is needed to optimize the process to reduce cost and decrease the life cycle of the cleanup effort. The cold cap layer that floats on the surface of the glass melt is the primary reaction zone for the feed-to-glass conversion. The conversion reactions include water release, melting of salts, evolution of batch gases, dissolution of quartz and the formation of molten glass. Obtaining efficient heat transfer to this region is crucial to achieving high rates of glass conversion. Computational fluid dynamics (CFD) modeling is being used to understand the heat transfer dynamics of the system and provide insight to optimize the process. A CFD model was developed to simulate the DM1200, a pilot-scale melter that has been extensively tested by the Vitreous State Laboratory (VSL). Electrodes are built into the melter to provide Joule heating to the molten glass. To promote heat transfer from the molten glass into the reactive cold cap layer, bubbling of the molten glass is used to stimulate forced convection within the melt pool. A three-phase volume of fluid approach is utilized to model the system, wherein the molten glass and cold cap regions are modeled as separate liquid phases, and the bubbling gas and plenum regions are modeled as one lumped gas phase. The modeling of the entire system with a volume of fluid model allows for the prescription of physical properties on a per-phase basis. The molten glass phase and the gas phase physical properties are obtained from previous experimental work. Finding representative

  2. Effects of Ru and Ag cap layers on microstructure and magnetic properties of FePt ultrathin films.

    Science.gov (United States)

    Liu, Mingfeng; Jin, Tianli; Hao, Liang; Cao, Jiangwei; Wang, Ying; Wu, Dongping; Bai, Jianmin; Wei, Fulin

    2015-01-01

    The effects of Ru and Ag cap layers on the microstructure and magnetic properties of the FePt ultrathin films have been investigated. The results indicate that i) The Ag cap layer segregates from the FePt/Ag bilayer, lowers the FePt ordering temperature, promotes the FePt thin films to form island structure, and enhances the coercivity; ii) The Ru cap layer increases the FePt ordering temperature, helps to maintain smooth continuous structure film, and restrains the FePt (001) orientation and perpendicular magnetic anisotropy (PMA). The effects become more pronounced for the 3-nm-thick FePt thin films. The effects can be mainly attributed to the different melting point and thermal expansion stress between the cap layer and FePt thin films.

  3. Effects of Ru and Ag cap layers on microstructure and magnetic properties of FePt ultrathin films

    Science.gov (United States)

    Liu, Mingfeng; Jin, Tianli; Hao, Liang; Cao, Jiangwei; Wang, Ying; Wu, Dongping; Bai, Jianmin; Wei, Fulin

    2015-04-01

    The effects of Ru and Ag cap layers on the microstructure and magnetic properties of the FePt ultrathin films have been investigated. The results indicate that i) The Ag cap layer segregates from the FePt/Ag bilayer, lowers the FePt ordering temperature, promotes the FePt thin films to form island structure, and enhances the coercivity; ii) The Ru cap layer increases the FePt ordering temperature, helps to maintain smooth continuous structure film, and restrains the FePt (001) orientation and perpendicular magnetic anisotropy (PMA). The effects become more pronounced for the 3-nm-thick FePt thin films. The effects can be mainly attributed to the different melting point and thermal expansion stress between the cap layer and FePt thin films.

  4. The Influence of Impurities and Metallic Capping Layers on the Microstructure of Copper Interconnects

    Science.gov (United States)

    Rizzolo, Michael

    As copper interconnects have scaled to ever smaller dimensions on semiconductor devices, the microstructure has become increasingly detrimental for performance and reliability. Small grains persist in interconnects despite annealing at high temperatures, leading to higher line resistance and more frequent electromigration-induced failures. Conventionally, it was believed that impurities from the electrodeposition pinned grain growth, but limitations in analytical techniques meant the effect was inferred rather than observed. Recent advances in analytical techniques, however, have enabled this work to quantify impurity content, location, and diffusion in relation to microstructural changes in electroplated copper. Surface segregation of impurities during the initial burst of grain growth was investigated. After no surface segregation was observed, a microfluidic plating cell was constructed to plate multilayer films with regions of intentionally high and low impurity concentrations to determine if grain growth could be pinned by the presence of impurities; it was not. An alternate mechanism for grain boundary pinning based on the texture of the seed layer is proposed, supported by time-resolved transmission electron microscopy and transmission electron backscatter diffraction data. The suggested model posits that the seed in narrow features has no preferred orientation, which results in rapid nucleation of subsurface grains in trench regions prior to recrystallization from the overburden down. These rapidly growing grains are able to block off several trenches from the larger overburden grains, inhibiting grain growth in narrow features. With this knowledge in hand, metallic capping layers were employed to address the problematic microstructure in 70nm lines. The capping layers (chromium, nickel, zinc, and tin) were plated on the copper overburden prior to annealing to manipulate the stress gradient and microstructural development during annealing. It appeared that

  5. P–n junction diodes with polarization induced p-type graded In x Ga1–x N layer

    Science.gov (United States)

    Enatsu, Yuuki; Gupta, Chirag; Keller, Stacia; Nakamura, Shuji; Mishra, Umesh K.

    2017-10-01

    In this study, p–n junction diodes with polarization induced p-type layer are demonstrated on Ga polar (0001) bulk GaN substrates. A quasi-p-type region is obtained by linearly grading the indium composition in un-doped In x Ga1–x N layers from 0% to 5%, taking advantage of the piezoelectric and spontaneous polarization fields which exist in group III-nitride heterostructures grown in the typical (0001) or c-direction. The un-doped graded In x Ga1–x N layers needed to be capped with a thin Mg-doped In x Ga1–x N layer to make good ohmic contacts and to reduce the on-resistance of the p–n diodes. The Pol-p–n junction diodes exhibited similar characteristics compared to reference samples with traditional p-GaN:Mg layers. A rise in breakdown voltage from 30 to 110 V was observed when the thickness of the graded InGaN layer was increased from 100 to 600 nm at the same grade composition.

  6. Magnetic tunnel junctions using Co/Pt multilayered free layers with perpendicular magnetic anisotropy

    Energy Technology Data Exchange (ETDEWEB)

    Machida, K; Funabashi, N; Aoshima, K; Kuga, K; Kikuchi, H; Shimidzu, N [Science and Technology Research Labs., Japan Broadcasting Corp. (NHK), 1-10-11 Kinuta, Setagaya-ku, Tokyo 157-8510 (Japan); Furukawa, K; Nakayama, T [Department of Electrical Engineering, Tokyo Denki University, 2-2 Kandanishikicho, Chiyoda-ku, Tokyo 101-8457 (Japan); Ishibashi, T, E-mail: machida.k-ge@nhk.or.jp [Department of Materials Science and Technology, Nagaoka University of Technology, 1603-1 Kamitomioka, Nagaoka, Niigata 940-2188 (Japan)

    2011-07-06

    Co/Pt multilayered films with perpendicular magnetic anisotropy have a large magneto-optical Kerr effect. To use the films with a submicron magneto-optical light modulator driven by spin transfer switching, we fabricated two types of magnetic tunnel junctions (MTJs) with Co/Pt multilayered films for the free layers. One is an fcc-based MTJ, another is a bcc-based MTJ with CoFeB/MgO/CoFeB junction. The fcc-based MTJ with a Ag buffer layer on the bottom electrode showed a large coercive force of the pinned layer, a large Kerr rotation angle of 0.3 degree in the free layer and a tunnel magnetoresistance (TMR) ratio of 3.8%. In the CoFeB/MgO/CoFeB junction, an X-ray diffraction pattern of an MgO layer showed a large MgO(002)-orientation. However, the TMR ratio was less than 3 %. An MTJ with a Ta buffer layer between the CoFeB layer and the Co/Pt multilayered films in the free layer was prepared. The Ta buffer was used to alleviate a lattice mismatch between bcc-CoFeB/MgO/CoFeB and fcc-Co/Pt multilayer. The peak intensity of the MgO(002)-orientation was increased up to 2 times. This result suggests that the crystalline texture of the bcc-CoFeB/MgO/CoFeB junction is strongly influenced by the fcc-Co/Pt multilayered films.

  7. Control of. cap alpha. -amylase mRNA accumulation by gibberellic acid and calcium in barley aleurone layers

    Energy Technology Data Exchange (ETDEWEB)

    Deikman, J.; Jones, R.L.

    1985-01-01

    Pulse-labeling of barley (Hordeum vulgare L. cv Himalaya) aleurone layers incubated for 13 hours in 2.5 micromolar gibberellic acid (GA/sub 3/) with or without 5 millimolar CaCl/sub 2/ shows that ..cap alpha..-amylase isozymes 3 and 4 are not synthesized in vivo in the absence of Ca/sup 2 +/. No difference was observed in ..cap alpha..-amylase mRNA levels between layers incubated for 12 hours in 2.5 micromolar GA/sub 3/ with 5 millimolar CaCl/sub 2/ and layers incubated in GA/sub 3/ alone. RNA isolated from layers incubated for 12 hours in GA/sub 3/ with and without CA/sup 2 +/. A cDNA clone for ..cap alpha..-amylase was isolated and used to measure ..cap alpha..-amylase mRNA levels in aleurone layers incubated in the presence and absence of Ca/sup 2 +/ was translated in vitro and was found to produce the same complement of translation products regardless of the presence of Ca/sup 2 +/ in the incubation medium. Immunoprecipitation of translation products showed that the RNA for ..cap alpha..-amylase synthesized in Ca/sup 2 +/-deprived aleurone layers was translatable. Ca/sup 2 +/ is required for the synthesis of ..cap alpha..-amylase isozymes 3 and 4 at a step after mRNA accumulation and processing.

  8. Fabrication of all-MgB Josephson junctions using MgO insulator layer

    Energy Technology Data Exchange (ETDEWEB)

    Oba, T. [Graduate School of Engineering, Iwate University, 4-3-5, Ueda, Morioka 020-8551 (Japan); Goto, S. [Lightom, 95-2 Sugo, Takizawa 020-0173 (Japan); Sasaki, S.; Nakanishi, Y.; Fujino, T. [Graduate School of Engineering, Iwate University, 4-3-5, Ueda, Morioka 020-8551 (Japan); Harada, Y. [JST Satellite Iwate, Japan Science and Technology Agency, 3-35-2 Iiokashinden, Morioka, Iwate 020-0852 (Japan); Nakamura, M. [Graduate School of Engineering, Iwate University, 4-3-5, Ueda, Morioka 020-8551 (Japan); Saito, A. [Department of Electrical Engineering, Yamagata University, 4-3-16, Jonan, Yonezawa, Yamagata 992-8510 (Japan); Yoshizawa, M. [Graduate School of Engineering, Iwate University, 4-3-5, Ueda, Morioka 020-8551 (Japan)], E-mail: yosizawa@iwate-u.ac.jp

    2008-09-15

    We report on the fabrication and properties of all-MgB{sub 2} tunnel junctions with an MgO barrier. Superconductor-insulator-superconductor (SIS) junctions were fabricated on C-plane sapphire substrates. MgB{sub 2} films were grown in an ultra-high vacuum in the 10{sup -9} Torr range. The MgO insulating layer was evaporated using an electron-beam gun. SIS junctions of 30 {mu}m in diameter were fabricated by standard photolithography and Ar ion milling techniques. The critical temperature (T{sub C}) of the lower MgB{sub 2} layer after the SIS junction fabrication process was 36.7 K, which remained the same as that of the bare MgB{sub 2} film. We observed tunneling behavior in the current-voltage (I-V) characteristics of the present junctions. A superconducting gap was clearly observed at around 2.7 mV (=2{delta})

  9. Liquid-phase-deposited siloxane-based capping layers for silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Veith-Wolf, Boris [Institute for Solar Energy Research Hamelin (ISFH), Am Ohrberg 1, 31860 Emmerthal (Germany); Wang, Jianhui; Hannu-Kuure, Milja; Chen, Ning; Hadzic, Admir; Williams, Paul; Leivo, Jarkko; Karkkainen, Ari [Optitune International Pte. Ltd., 20 Maxwell Road, #05-08 Maxwell House, Singapore 069113 (Singapore); Schmidt, Jan [Institute for Solar Energy Research Hamelin (ISFH), Am Ohrberg 1, 31860 Emmerthal (Germany); Department of Solar Energy, Institute of Solid-State Physics, Leibniz University Hanover, Appelstrasse 2, 30167 Hanover (Germany)

    2015-02-02

    We apply non-vacuum processing to deposit dielectric capping layers on top of ultrathin atomic-layer-deposited aluminum oxide (AlO{sub x}) films, used for the rear surface passivation of high-efficiency crystalline silicon solar cells. We examine various siloxane-based liquid-phase-deposited (LPD) materials. Our optimized AlO{sub x}/LPD stacks show an excellent thermal and chemical stability against aluminum metal paste, as demonstrated by measured surface recombination velocities below 10 cm/s on 1.3 Ωcm p-type silicon wafers after firing in a belt-line furnace with screen-printed aluminum paste on top. Implementation of the optimized LPD layers into an industrial-type screen-printing solar cell process results in energy conversion efficiencies of up to 19.8% on p-type Czochralski silicon.

  10. Influence of silicon dioxide capping layers on pore characteristics in nanocrystalline silicon membranes.

    Science.gov (United States)

    Qi, Chengzhu; Striemer, Christopher C; Gaborski, Thomas R; McGrath, James L; Fauchet, Philippe M

    2015-02-06

    Porous nanocrystalline silicon (pnc-Si) membranes are a new class of membrane material with promising applications in biological separations. Pores are formed in a silicon film sandwiched between nm thick silicon dioxide layers during rapid thermal annealing. Controlling pore size is critical in the size-dependent separation applications. In this work, we systematically studied the influence of the silicon dioxide capping layers on pnc-Si membranes. Even a single nm thick top oxide layer is enough to switch from agglomeration to pore formation after annealing. Both the pore size and porosity increase with the thickness of the top oxide, but quickly reach a plateau after 10 nm of oxide. The bottom oxide layer acts as a barrier layer to prevent the a-Si film from undergoing homo-epitaxial growth during annealing. Both the pore size and porosity decrease as the thickness of the bottom oxide layer increases to 100 nm. The decrease of the pore size and porosity is correlated with the increased roughness of the bottom oxide layer, which hinders nanocrystal nucleation and nanopore formation.

  11. Suppression of ion-implantation induced porosity in germanium by a silicon dioxide capping layer

    Science.gov (United States)

    Tran, Tuan T.; Alkhaldi, Huda S.; Gandhi, Hemi H.; Pastor, David; Huston, Larissa Q.; Wong-Leung, Jennifer; Aziz, Michael J.; Williams, J. S.

    2016-08-01

    Ion implantation with high ion fluences is indispensable for successful use of germanium (Ge) in the next generation of electronic and photonic devices. However, Ge readily becomes porous after a moderate fluence implant ( ˜1 ×1015 ion cm-2 ) at room temperature, and for heavy ion species such as tin (Sn), holding the target at liquid nitrogen (LN2) temperature suppresses porosity formation only up to a fluence of 2 ×1016 ion cm-2 . We show, using stylus profilometry and electron microscopy, that a nanometer scale capping layer of silicon dioxide significantly suppresses the development of the porous structure in Ge during a S n - implant at a fluence of 4.5 ×1016 ion cm-2 at LN2 temperature. The significant loss of the implanted species through sputtering is also suppressed. The effectiveness of the capping layer in preventing porosity, as well as suppressing sputter removal of Ge, permits the attainment of an implanted Sn concentration in Ge of ˜15 at.% , which is about 2.5 times the maximum value previously attained. The crystallinity of the Ge-Sn layer following pulsed-laser-melting induced solidification is also greatly improved compared with that of uncapped material, thus opening up potential applications of the Ge-Sn alloy as a direct bandgap material fabricated by an ion beam synthesis technique.

  12. InGaAs/GaAs quantum dot interdiffiusion induced by cap layer overgrowth

    Energy Technology Data Exchange (ETDEWEB)

    Jasinski, J.; Babinski, A.; Czeczott, M.; Bozek, R.

    2000-06-28

    The effect of thermal treatment during and after growth of InGaAs/GaAs quantum dot (QD) structures was studied. Transmission electron microscopy and atomic force microscopy confirmed the presence of interacting QDs, as was expected from analysis of temperature dependence of QD photoluminescence (PL) peak. The results indicate that the effect of post-growth annealing can be similar to the effect of elevated temperature of capping layer growth. Both, these thermal treatments can lead to a similar In and Ga interdiffiusion resulting in a similar blue-shift of QD PL peak.

  13. Low Temperature Processed Complementary Metal Oxide Semiconductor (CMOS) Device by Oxidation Effect from Capping Layer

    Science.gov (United States)

    Wang, Zhenwei; Al-Jawhari, Hala A.; Nayak, Pradipta K.; Caraveo-Frescas, J. A.; Wei, Nini; Hedhili, M. N.; Alshareef, H. N.

    2015-04-01

    In this report, both p- and n-type tin oxide thin-film transistors (TFTs) were simultaneously achieved using single-step deposition of the tin oxide channel layer. The tuning of charge carrier polarity in the tin oxide channel is achieved by selectively depositing a copper oxide capping layer on top of tin oxide, which serves as an oxygen source, providing additional oxygen to form an n-type tin dioxide phase. The oxidation process can be realized by annealing at temperature as low as 190°C in air, which is significantly lower than the temperature generally required to form tin dioxide. Based on this approach, CMOS inverters based entirely on tin oxide TFTs were fabricated. Our method provides a solution to lower the process temperature for tin dioxide phase, which facilitates the application of this transparent oxide semiconductor in emerging electronic devices field.

  14. Low Temperature Processed Complementary Metal Oxide Semiconductor (CMOS) Device by Oxidation Effect from Capping Layer

    KAUST Repository

    Wang, Zhenwei

    2015-04-20

    In this report, both p- and n-type tin oxide thin-film transistors (TFTs) were simultaneously achieved using single-step deposition of the tin oxide channel layer. The tuning of charge carrier polarity in the tin oxide channel is achieved by selectively depositing a copper oxide capping layer on top of tin oxide, which serves as an oxygen source, providing additional oxygen to form an n-type tin dioxide phase. The oxidation process can be realized by annealing at temperature as low as 190°C in air, which is significantly lower than the temperature generally required to form tin dioxide. Based on this approach, CMOS inverters based entirely on tin oxide TFTs were fabricated. Our method provides a solution to lower the process temperature for tin dioxide phase, which facilitates the application of this transparent oxide semiconductor in emerging electronic devices field.

  15. The sensitivity of stratocumulus-capped mixed layers to cloud droplet concentration: do LES and mixed-layer models agree?

    Directory of Open Access Journals (Sweden)

    J. Uchida

    2010-05-01

    Full Text Available The sensitivity of a stratocumulus-capped mixed layer to a change in cloud droplet concentration is evaluated with a large-eddy simulation (LES and a mixed layer model (MLM. The strength of the second aerosol indirect effect simulated by the two model types agrees within 50% for cases in which the LES-simulated boundary layer remains well mixed, if the MLM entrainment closure includes the effects of cloud droplet sedimentation.

    To achieve this agreement, parameters in the MLM entrainment closure and the drizzle parameterization must be retuned to match the LES. This is because the LES advection scheme and microphysical parameterization significantly bias the entrainment rate and precipitation profile compared to observational best guesses. Before this modification, the MLM simulates more liquid water path and much more drizzle at a given droplet concentration than the LES and is more sensitive to droplet concentration, even undergoing a drizzle-induced boundary layer collapse at low droplet concentrations. After this modification, both models predict a comparable decrease of cloud liquid water path as droplet concentration increases, cancelling 30–50% of the Twomey effect for our case. The agreement breaks down at the lowest simulated droplet concentrations, for which the boundary layer in the LES is not well mixed.

    Our results highlight issues with both types of model. Potential LES biases due to inadequate resolution, subgrid mixing and parameterized microphysics must be carefully considered when trying to make a quantitative inference of the second indirect effect from an LES of a stratocumulus-topped boundary layer. On the other hand, even slight internal decoupling of the boundary layer invalidates the central assumption of an MLM, substantially limiting the range of conditions that MLM-predicted sensitivities to droplet concentration are meaningful.

  16. The sensitivity of stratocumulus-capped mixed layers to cloud droplet concentration: do LES and mixed-layer models agree?

    Directory of Open Access Journals (Sweden)

    P. N. Blossey

    2009-12-01

    Full Text Available The sensitivity of a stratocumulus-capped mixed layer to a change in cloud droplet concentration is evaluated with a large-eddy simulation (LES and a mixed layer model (MLM, to see if the two model types agree on the strength of the second aerosol indirect effect. Good agreement can be obtained if the MLM entrainment closure explicitly reduces entrainment efficiency proportional to the rate of cloud droplet sedimentation at cloud top for cases in which the LES-simulated boundary layer remains well mixed, with a single peak in the vertical profile of vertical velocity variance.

    To achieve this agreement, the MLM entrainment closure and the drizzle parameterization must be modified from their observationally-based defaults. This is because the LES advection scheme and microphysical parameterization significantly bias the entrainment rate and precipitation profile compared to observational best guesses. Before this modification, the MLM simulates more liquid water path and much more drizzle at a given droplet concentration than the LES and is more sensitive to droplet concentration, even undergoing a drizzle-induced boundary layer collapse at low droplet concentrations. After this modification, both models predict a similar decrease of cloud liquid water path as droplet concentration increases, cancelling 30–50% of the Twomey effect for our case. The agreement breaks down at the lowest simulated droplet concentrations, for which the boundary layer in the LES is not well mixed.

    Our results highlight issues with both types of model. Potential LES biases due to inadequate resolution, subgrid mixing and microphysics must be carefully considered when trying to make a quantitative inference of the second indirect effect from an LES of a stratocumulus-topped boundary layer. On the other hand, even slight internal decoupling of the boundary layer invalidates MLM-predicted sensitivity to droplet concentrations.

  17. Selective layer disordering in intersubband Al0.028Ga0.972N/AlN superlattices with silicon nitride capping layer

    Science.gov (United States)

    Wierer, Jonathan J., Jr.; Allerman, Andrew A.; Skogen, Erik J.; Tauke-Pedretti, Anna; Vawter, Gregory A.; Montaño, Ines

    2015-06-01

    Selective layer disordering in an intersubband Al0.028Ga0.972N/AlN superlattice using a silicon nitride (SiNx) capping layer is demonstrated. The SiNx capped superlattice exhibits suppressed layer disordering under high-temperature annealing. Additionally, the rate of layer disordering is reduced with increased SiNx thickness. The layer disordering is caused by Si diffusion, and the SiNx layer inhibits vacancy formation at the crystal surface and ultimately, the movement of Al and Ga atoms across the heterointerfaces. Patterning of the SiNx layer results in selective layer disordering, an attractive method to integrate active and passive III-nitride-based intersubband devices.

  18. Photovoltaic effect in few-layer black phosphorus PN junctions defined by local electrostatic gating.

    Science.gov (United States)

    Buscema, Michele; Groenendijk, Dirk J; Steele, Gary A; van der Zant, Herre S J; Castellanos-Gomez, Andres

    2014-01-01

    In conventional photovoltaic solar cells, photogenerated carriers are extracted by the built-in electric field of a semiconductor PN junction, defined by ionic dopants. In atomically thin semiconductors, the doping level can be controlled by the field effect, enabling the implementation of electrically tunable PN junctions. However, most two-dimensional (2D) semiconductors do not show ambipolar transport, which is necessary to realize PN junctions. Few-layer black phosphorus (b-P) is a recently isolated 2D semiconductor with direct bandgap, high mobility, large current on/off ratios and ambipolar operation. Here we fabricate few-layer b-P field-effect transistors with split gates and hexagonal boron nitride dielectric. We demonstrate electrostatic control of the local charge carrier type and density in the device. Illuminating a gate-defined PN junction, we observe zero-bias photocurrents and significant open-circuit voltages due to the photovoltaic effect. The small bandgap of the material allows power generation for illumination wavelengths up to 940 nm, attractive for energy harvesting in the near-infrared.

  19. Effect of coupling ability between a synthetic antiferromagnetic layer and pinned layer on a bridging layer of Ta, Ti, and Pt in perpendicular-magnetic tunnel junctions.

    Science.gov (United States)

    Lee, Du-Yeong; Shim, Tae-Hun; Park, Jea-Gun

    2016-07-22

    By fabricating CoFeB/MgO/CoFeB-based perpendicular-magnetic tunnel junction (p-MTJ) spin-valves stacked with a [Co/Pd] n -SyAF layer based on a TiN bottom electrode on a 12 inch Si wafer (001) substrate, we investigated how the bridging layers of Ta, Ti, and Pt and their thickness variation affected the tunneling magneto-resistance (TMR) ratio of Co2Fe6B2 pinned-layer behavior in magnetic-tunnel-junctions. TMR ratios for Ta, Ti, and Pt bridging layers were observed to be 64.1, 70.2, and 29.5%, respectively. It was confirmed by high resolution transmission electron microscopy (HR-TEM) that this difference resulted from CoFeB/MgO/CoFeB MTJ layers with Ta and Ti bridging layers being textured well with a bcc (100) structure, indicating that Ta and Ti bridging layers bridged SyAF fcc (111) and MTJ bcc (100). On the other hand, the MTJ layer with Pt bridging layer was incorrectly textured, indicating that a Pt bridging layer is unsuitable to bridge SyAF fcc (111) and MTJ bcc (100) due to Pt being diffused into the CoFeB pinned-layer. In addition, perpendicular magnetic anisotropy (PMA) behavior of the CoFeB pinned-layer was found to depend strongly on a bridging layer thickness; higher TMRs of Ta and Ti were observed at the optimal bridging layers' thickness, which enable the realization of PMAs of the pinned-layer and ferro-coupling of the pinned-layer with the lower-SyAF layer. Among the three bridging materials (Ta, Ti, and Pt), we observed that Ti showed the highest TMR ratio and widest thickness range for a high TMR ratio, indicating that a higher TMR ratio is needed to obtain the best deposition process margin.

  20. Perpendicular magnetic tunnel junctions with a synthetic storage or reference layer: A new route towards Pt- and Pd-free junctions

    Science.gov (United States)

    Cuchet, Léa; Rodmacq, Bernard; Auffret, Stéphane; Sousa, Ricardo C.; Prejbeanu, Ioan L.; Dieny, Bernard

    2016-02-01

    We report here the development of Pt and Pd-free perpendicular magnetic tunnel junctions (p-MTJ) for STT-MRAM applications. We start by studying a p-MTJ consisting of a bottom synthetic Co/Pt reference layer and a synthetic FeCoB/Ru/FeCoB storage layer covered with an MgO layer. We first investigate the evolution of RKKY coupling with Ru spacer thickness in such a storage layer. The coupling becomes antiferromagnetic above 0.5 nm and its strength decreases monotonously with increasing Ru thickness. This contrasts with the behavior of Co-based systems for which a maximum in interlayer coupling is generally observed around 0.8 nm. A thin Ta insertion below the Ru spacer considerably decreases the coupling energy, without basically changing its variation with Ru thickness. After optimization of the non-magnetic and magnetic layer thicknesses, it appears that such a FeCoB/Ru/FeCoB synthetic storage layer sandwiched between MgO barriers can be made stable enough to actually be used as hard reference layer in single or double magnetic tunnel junctions, the storage layer being now a single soft FeCoB layer. Finally, we realize Pt- or Pd-free robust perpendicular magnetic tunnel junctions, still keeping the advantage of a synthetic reference layer in terms of reduction of stray fields at small pillar sizes.

  1. Hybrid pn-junction solar cells based on layers of inorganic nanocrystals and organic semiconductors: optimization of layer thickness by considering the width of the depletion region.

    Science.gov (United States)

    Saha, Sudip K; Guchhait, Asim; Pal, Amlan J

    2014-03-07

    We report the formation and characterization of hybrid pn-junction solar cells based on a layer of copper diffused silver indium disulfide (AgInS2@Cu) nanoparticles and another layer of copper phthalocyanine (CuPc) molecules. With copper diffusion in the nanocrystals, their optical absorption and hence the activity of the hybrid pn-junction solar cells was extended towards the near-IR region. To decrease the particle-to-particle separation for improved carrier transport through the inorganic layer, we replaced the long-chain ligands of copper-diffused nanocrystals in each monolayer with short-ones. Under illumination, the hybrid pn-junctions yielded a higher short-circuit current as compared to the combined contribution of the Schottky junctions based on the components. A wider depletion region at the interface between the two active layers in the pn-junction device as compared to that of the Schottky junctions has been considered to analyze the results. Capacitance-voltage characteristics under a dark condition supported such a hypothesis. We also determined the width of the depletion region in the two layers separately so that a pn-junction could be formed with a tailored thickness of the two materials. Such a "fully-depleted" device resulted in an improved photovoltaic performance, primarily due to lessening of the internal resistance of the hybrid pn-junction solar cells.

  2. Influence of an Fe cap layer on the structural and magnetic properties of Fe49Pt51/Fe bi-layers

    Institute of Scientific and Technical Information of China (English)

    Duan Chao-Yang; Ma Bin; Wei Fu-Lin; Zhang zong-Zhi; Jin Qing-Yuan

    2009-01-01

    The influences of an Fe cap layer on the structural and magnetic properties of FePt/Fe bi-layers are investigated.Compared with single FePt alloy films, a thin Fe layer can affect the crystalline orientation and improve the chemical ordering of L10 FePt films. Moreover, the coercivity increases when a thin Fe layer covers the FePt layer. Beyond a critical thickness, however, the Fe cover layer quickens the magnetization reversal of Fe49Pt51/Fe bi-layers by their exchange coupling.

  3. Effect of coupling ability between a synthetic antiferromagnetic layer and pinned layer on a bridging layer of Ta, Ti, and Pt in perpendicular-magnetic tunnel junctions

    Science.gov (United States)

    Lee, Du-Yeong; Shim, Tae-Hun; Park, Jea-Gun

    2016-07-01

    By fabricating CoFeB/MgO/CoFeB-based perpendicular-magnetic tunnel junction (p-MTJ) spin-valves stacked with a [Co/Pd] n -SyAF layer based on a TiN bottom electrode on a 12 inch Si wafer (001) substrate, we investigated how the bridging layers of Ta, Ti, and Pt and their thickness variation affected the tunneling magneto-resistance (TMR) ratio of Co2Fe6B2 pinned-layer behavior in magnetic-tunnel-junctions. TMR ratios for Ta, Ti, and Pt bridging layers were observed to be 64.1, 70.2, and 29.5%, respectively. It was confirmed by high resolution transmission electron microscopy (HR-TEM) that this difference resulted from CoFeB/MgO/CoFeB MTJ layers with Ta and Ti bridging layers being textured well with a bcc (100) structure, indicating that Ta and Ti bridging layers bridged SyAF fcc (111) and MTJ bcc (100). On the other hand, the MTJ layer with Pt bridging layer was incorrectly textured, indicating that a Pt bridging layer is unsuitable to bridge SyAF fcc (111) and MTJ bcc (100) due to Pt being diffused into the CoFeB pinned-layer. In addition, perpendicular magnetic anisotropy (PMA) behavior of the CoFeB pinned-layer was found to depend strongly on a bridging layer thickness; higher TMRs of Ta and Ti were observed at the optimal bridging layers’ thickness, which enable the realization of PMAs of the pinned-layer and ferro-coupling of the pinned-layer with the lower-SyAF layer. Among the three bridging materials (Ta, Ti, and Pt), we observed that Ti showed the highest TMR ratio and widest thickness range for a high TMR ratio, indicating that a higher TMR ratio is needed to obtain the best deposition process margin.

  4. Broadband plasma waves observed in the polar cap boundary layer: Polar

    Science.gov (United States)

    Tsurutani, B. T.; Lakhina, G. S.; Ho, C. M.; Arballo, J. K.; Galvan, C.; Boonsiriseth, A.; Pickett, J. S.; Gurnett, D. A.; Peterson, W. K.; Thorne, R. M.

    1998-08-01

    Polar observations indicate the presence of intense broadband plasma waves nearly all of the time (96% occurrence frequency in this study) near the apogee of the Polar trajectory (~6-8RE). The region of wave activity bounds the dayside (0500 to 1800 LT) polar cap magnetic fields, and we thus call these waves polar cap boundary layer (PCBL) waves. The waves are spiky signals spanning a broad frequency range from ~101 to 2×104Hz. The waves have a rough power law spectral shape. The wave magnetic component has on average a f-2.7 frequency dependence and appears to have an upper frequency cutoff of ~(6-7)×103Hz, which is the electron cyclotron frequency. The electric component has on average a f-2.2 frequency dependence and extends up to ~2×104Hz. The frequency dependences of the waves and the amplitude ratios of B'/E' indicate a possible mixture of obliquely propagating electromagnetic whistler mode waves plus electrostatic waves. There are no clear intensity peaks in either the magnetic or electric spectra which can identify the plasma instability responsible for the generation of the PCBL waves. The wave character (spiky nature, frequency dependence and admixture of electromagnetic and electrostatic components) and intensity are quite similar to those of the low-latitude boundary layer (LLBL) waves detected at and inside the low-latitude dayside magnetopause. Because of the location of the PCBL waves just inside the polar cap magnetic field lines, it is natural to assume that these waves are occurring on the same magnetic field lines as the LLBL waves, but at lower altitudes. Because of the similar wave intensities at both locations and the occurrence at all local times, we rule out an ionospheric source. We also find a magnetosheath origin improbable. The most likely scenario is that the waves are locally generated by field-aligned currents or current gradients. We find a strong relationship between the presence of ionospheric and magnetosheath ions and the

  5. Radial junction solar cells based on heterojunction with intrinsic thin layer (HIT) structure

    Science.gov (United States)

    Shen, Haoting

    The radial junction wire array structure was previously proposed as a solar cell geometry to separate the direction of carrier collection from the direction of light absorption, thereby circumventing the need to use high quality but expensive single crystal silicon (c-Si) material that has long minority carrier diffusion lengths. The Si radial junction structure can be realized by forming radial p-n junctions on Si pillar/wire arrays that have a diameter comparable to the minority carrier diffusion length. With proper design, the Si pillar arrays are also able to enhance light trapping and thereby increase the light absorption. However, the larger junction area and surface area on the pillar arrays compared to traditional planar junction Si solar cells makes it challenging to fabricate high performance devices due an in increase in surface defects. Therefore, effective surface passivation strategies are essential for radial junction devices. Hydrogenated amorphous silicon (a-Si:H) deposited by plasma-enhanced chemical vapor deposition (PECVD) using a heterojunction with intrinsic thin layer (HIT) structure has previously been demonstrated as a very effective surface passivation layer for planar c-Si solar cells. It is therefore of interest to use a-Si:H in a HIT layer structure for radial p-n junction c-Si pillar array solar cells. This poses several challenges, however, including the need to fabricate ultra-thin a-Si:H layers conformally on high aspect ratio Si pillars, control the crystallinity at the a-Si:H/c-Si interface to yield a low interface state density and optimize the layer thicknesses, doping and contacts to yield high performance devices. This research in this thesis was aimed at developing the processing technology required to apply the HIT structure to radial junction Si pillar array solar cell devices and to evaluate the device characteristics. Initial studies focused on understanding the effects of process conditions on the growth rate and

  6. Si implanted reactivation in GaN grown on sapphire using AlN and oxide cap layers

    Energy Technology Data Exchange (ETDEWEB)

    Cayrel, F., E-mail: frederic.cayrel@univ-tours.fr [Universite Francois Rabelais de Tours, Laboratoire de Microelectronique de Puissance, 16 Rue Pierre et Marie Curie, BP 7155, 37071 Tours Cedex 2 (France); Bazin, A.E. [Universite Francois Rabelais de Tours, Laboratoire de Microelectronique de Puissance, 16 Rue Pierre et Marie Curie, BP 7155, 37071 Tours Cedex 2 (France); STMicroelectronics, 16 Rue Pierre et Marie Curie, BP 7155, 37071 Tours Cedex 2 (France); Lamhamdi, M.; Benchanaa, Y. [Universite Francois Rabelais de Tours, Laboratoire de Microelectronique de Puissance, 16 Rue Pierre et Marie Curie, BP 7155, 37071 Tours Cedex 2 (France); Menard, O. [Universite Francois Rabelais de Tours, Laboratoire de Microelectronique de Puissance, 16 Rue Pierre et Marie Curie, BP 7155, 37071 Tours Cedex 2 (France); STMicroelectronics, 16 Rue Pierre et Marie Curie, BP 7155, 37071 Tours Cedex 2 (France); Yvon, A.; Collard, E. [STMicroelectronics, 16 Rue Pierre et Marie Curie, BP 7155, 37071 Tours Cedex 2 (France); Alquier, D. [Universite Francois Rabelais de Tours, Laboratoire de Microelectronique de Puissance, 16 Rue Pierre et Marie Curie, BP 7155, 37071 Tours Cedex 2 (France)

    2012-02-01

    Gallium nitride (GaN) is a promising material for power electronic devices. Due to GaN sensitivity to high temperature treatments, dopant activation, after ion implant, is one of the major critical steps to be overcome. An annealing cap layer is then mandatory during high temperature treatment to avoid degradations. In this work, cap layers, such as AlN and SiO{sub x}, were deposited on Si-implanted N-type GaN. Samples were annealed using both classical (FA) and rapid thermal (RTA) annealing for times ranging from 30 s to 8 h and temperatures from 1000 to 1150 Degree-Sign C. Transmission Electron Microscopy has been done to observe the implanted layer structure. After cap layer removal, samples surface has been investigated through Atomic Force Microscopy measurements. Dopant activity was indirectly evaluated by Specific Contact Resistance (SCR) measurements. This work demonstrates that low SCR value (8.2 Multiplication-Sign 10{sup -5} {Omega} cm{sup 2}) with low surface roughness ({approx}1 nm) can be reached using RTA and an oxide cap layer. However, presence of hexagonal pits in GaN layer is difficult to avoid. Compromise between low SCR with low roughness value and low hexagonal pits density on the GaN surface must be found.

  7. High luminous efficacy green light-emitting diodes with AlGaN cap layer.

    Science.gov (United States)

    Alhassan, Abdullah I; Farrell, Robert M; Saifaddin, Burhan; Mughal, Asad; Wu, Feng; DenBaars, Steven P; Nakamura, Shuji; Speck, James S

    2016-08-01

    We demonstrate very high luminous efficacy green light-emitting diodes employing Al0.30Ga0.70N cap layer grown on patterned sapphire substrates by metal organic chemical vapor deposition. The peak external quantum efficiency and luminous efficacies were 44.3% and 239 lm/w, respectively. At 20 mA (20 A/cm2) the light output power was 14.3 mW, the forward voltage was 3.5 V, the emission wavelength was 526.6 nm, and the external quantum efficiency was 30.2%. These results are among the highest reported luminous efficacy values for InGaN based green light-emitting diodes.

  8. Research on CeO2 cap layer for YBCO-coated conductor

    Institute of Scientific and Technical Information of China (English)

    Shi Dong-Qi; Ma Ping; Ko Rock-Kil; Kim Ho-Sup; Chung Jun-Ki; Song Kyu-Jeong; Park Chan

    2007-01-01

    Two groups of coated conductor samples with different thicknesses of CeO2 cap layers deposited by pulsed laser deposition (PLD) under the same conditions have been studied. Of them, one group is of CeO2 films, which are deposited on stainless steel (SS) tapes coated by IBAD-YSZ (IBAD-YSZ/SS), and the other group is of CeO2/YSZ/Y2O3 multilayers, which are deposited on NiW substrates by PLD for the fabrication of YBCO-coated conductor through the RABiTS approach. YBCO film is then deposited on the tops of both types of buffer layers by PLD. The effects of the thickness of the CeO2 film on the texture of the CeO2 film and the critical current density (Jc) of the YBCO film are analysed. For the case of CeO2 film on IBAD-YSZ/SS, there appears a self-epitaxy effect with increasing thickness of the CeO2 film. For CeO2/YSZ/Y2O3/NiW, in which the buffer layers are deposited by PLD, there occurs no self-epitaxy effect, and the optimal thickness of CeO2 is about 50nm. The surface morphologies of the two groups of samples are examined by SEM.

  9. Crystal chemistry of layered structures formed by linear rigid silyl-capped molecules

    Directory of Open Access Journals (Sweden)

    Daniel Lumpi

    2015-09-01

    Full Text Available The crystallization behavior of methylthio- or methylsulfonyl-containing spacer extended Z,Z-bis-ene–yne molecules capped with trimethylsilyl groups obtained by (tandem thiophene ring fragmentation and of two non-spacer extended analogs were investigated. The rigid and linear molecules generally crystallized in layers whereby the flexibility of the layer interfaces formed by the silyl groups leads to a remarkably rich crystal chemistry. The molecules with benzene and thiophene spacers both crystallized with C2/c symmetry and can be considered as merotypes. Increasing the steric bulk of the core by introduction of ethylenedioxythiophene (EDOT gave a structure incommensurately modulated in the [010] direction. Further increase of steric demand in the case of a dimethoxythiophene restored periodicity along [010] but resulted in a doubling of the c vector. Two different polytypes were observed, which feature geometrically different layer interfaces (non-OD, order–disorder, polytypes, one with a high stacking fault probability. Oxidation of the methylthio groups of the benzene-based molecule to methylsulfonyl groups led to three polymorphs (two temperature-dependent, which were analyzed by Hirshfeld surface de/di fingerprint plots. The analogously oxidized EDOT-based molecule crystallized as systematic twins owing to its OD polytypism. Shortening of the backbone by removal of the aryl core resulted in an enantiomorphic structure and a further shortening by removal of a methylthio-ene fragment again in a systematically twinned OD polytype.

  10. Study of seed layer effect in nuclear battery with P-N diode junction

    Energy Technology Data Exchange (ETDEWEB)

    Uhm, Young Rang; Son, Kwang Jae; Lee, Jun Sig [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of); Choi, Byoung Gun [Kookmin Univ., Seoul (Korea, Republic of)

    2014-10-15

    A nuclear battery with diode junction is a device that converts nuclear radiation directly to electric power. The mechanism of a nuclear battery is same as the P-N junction diode for solar cell application. The photovoltaic is operated by converted photons to electrical energy in the junction. In betavoltaic battery, beta particles are collected and converted to electrical energy as similar principle as photovoltaic. A very low current, order of nano or micro amps, is generated in devices. If a radioisotope (RI) with a long halflife (over 50 years) is used, a lifetime of a power source is extended as long as halflife time of RI.. Some special applications require long-lived compact power sources. These include space equipment, sensors in remote locations (space, underground, etc.), and implantable medical devices. Conventionally, these sources rely on converting chemical energy to electricity. This means they require a large storage of chemical 'fuel' since the amount of energy released per reaction is small. The nuclear battery is a novel solution to solve the power needs of these applications. For the {sup 63}Ni beta-source we used, the half-life is 100.2 years. Hence, the power sources we describe could extend a system's operating life by several decades or even a century, during which time the system could gain learned behavior without worrying about the power turning off. Radioactive thin-film-based power sources also have energy density orders of magnitude higher than chemical-reaction-based energy sources. In this study, we fabricate nuclear battery using {sup 63}Ni source with diode junction, and studied seed layer effect for optimization of structure of p-n junction.

  11. Influence of window layer thickness on double layer antirefiection coating for triple junction solar cells*

    Institute of Scientific and Technical Information of China (English)

    Wang Lijuan; Zhan Feng; Yu Ying; Zhu Yan; Liu Shaoqing; Huang Shesong; Ni Haiqiao; Niu Zhichuan

    2011-01-01

    The optimization of a SiO2/TiO2, SiO2/ZnS double layer antireflection coating (ARC) on Ga0.5ln0.5P/ln0.02Ga0.98As/Ge solar cells for terrestrial application is discussed. The Al0.5In0.5P window layer thickness is also taken into consideration. It is shown that the optimal parameters of double layer ARC vary with the thickness of the window layer.

  12. Thermally enhanced perpendicular magnetic anisotropy behaviors of ultrathin [Co/Pd]{sub n} multilayers via NiO{sub x} capping layer

    Energy Technology Data Exchange (ETDEWEB)

    Chung, Woo Seong [Nano Quantum Electronics Lab, Department of Electronics and Computer Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of); Lee, Ja Bin; An, Gwang Guk; Yang, Seung Mo [Novel Functional Materials and Devices Laboratory, Research Institute for Natural Science, Department of Physics, Hanyang University, Seoul 133-791 (Korea, Republic of); Kim, Jae Hong [Division of Nano-Scale Semiconductor Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of); Hong, Jin Pyo, E-mail: jphong@hanyang.ac.kr [Novel Functional Materials and Devices Laboratory, Research Institute for Natural Science, Department of Physics, Hanyang University, Seoul 133-791 (Korea, Republic of); Division of Nano-Scale Semiconductor Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of)

    2015-06-01

    We report the enhanced perpendicular magnetic anisotropy (PMA) features of ultrathin [Co/Pd]{sub 3} multilayers (MLs) employing a NiO{sub x} insertion layer at high annealing temperatures. Thermally enhanced PMA in [Co/Pd]{sub 3}/NiO{sub x} (capping layer) MLs were achieved at a specific capping layer thickness, while no PMA responses were observed for a NiO{sub x} (buffer layer)/[Co/Pd]{sub 3} ML, regardless of NiO{sub x} thickness. X-ray diffraction observations, including rocking curves, identified the relatively different crystalline characteristics of the NiO{sub x} capping and buffer layers. Origin of the enhanced PMAs of [Co/Pd]{sub 3} MLs containing a NiO{sub x} capping layer is described based on the NiO{sub x} capping effect possibly providing additional Co/Oxide i-PMA under high-temperature annealing.

  13. Capping hazardous red mud using acidic soil with an embedded layer of zeolite for plant growth.

    Science.gov (United States)

    Ma, Yingqun; Si, Chunhua; Lin, Chuxia

    2014-01-01

    A nearly three-year microcosm experiment was conducted to test the effectiveness of capping red mud using acidic soil with an embedded layer of zeolite in sustaining the growth of a grass species. This 'sandwich-structured' design allowed self-sustaining growth of the plants under rain-fed conditions no matter whether the underlying red mud was neutralized or not. During the initial stage, the plants grew better when the red mud was not neutralized with MgCl2 probably due to pH rise in the root zone. Neutralization of red mud led to salinization and pH decrease in the root zone. However, the difference in plant growth performance between these scenarios became less remarkable over time due to gradual improvement of soil conditions in the neutralized scenarios. Continuous leaching of soluble salts and alkali by rainwater extended the root zone to the red mud layer. As a result of vegetative production, soil organic matter rapidly accumulated. This, combined with increase in pH and decrease in salinity, markedly facilitated microbial activities and consequently improved the supply of nutrients. This study provides abasis for field-scale experimental design that will have implications for effectively establishing vegetative cover in red mud disposal sites to control dust hazards.

  14. A Point Mutation in the Exon Junction Complex Factor Y14 Disrupts Its Function in mRNA Cap Binding and Translation Enhancement.

    Science.gov (United States)

    Chuang, Tzu-Wei; Lee, Kuo-Ming; Lou, Yuan-Chao; Lu, Chia-Chen; Tarn, Woan-Yuh

    2016-04-15

    Eukaryotic mRNA biogenesis involves a series of interconnected steps mediated by RNA-binding proteins. The exon junction complex core protein Y14 is required for nonsense-mediated mRNA decay (NMD) and promotes translation. Moreover, Y14 binds the cap structure of mRNAs and inhibits the activity of the decapping enzyme Dcp2. In this report, we show that an evolutionarily conserved tryptophan residue (Trp-73) of Y14 is critical for its binding to the mRNA cap structure. A Trp-73 mutant (W73V) bound weakly to mRNAs and failed to protect them from degradation. However, this mutant could still interact with the NMD and mRNA degradation factors and retained partial NMD activity. In addition, we found that the W73V mutant could not interact with translation initiation factors. Overexpression of W73V suppressed reporter mRNA translation in vitro and in vivo and reduced the level of a set of nascent proteins. These results reveal a residue of Y14 that confers cap-binding activity and is essential for Y14-mediated enhancement of translation. Finally, we demonstrated that Y14 may selectively and differentially modulate protein biosynthesis.

  15. Temperature dependence of microwave oscillations in magnetic tunnel junctions with a perpendicularly magnetized free layer

    Energy Technology Data Exchange (ETDEWEB)

    Guo, Peng; Feng, Jiafeng, E-mail: hxwei@iphy.ac.cn, E-mail: jiafengfeng@iphy.ac.cn; Wei, Hongxiang, E-mail: hxwei@iphy.ac.cn, E-mail: jiafengfeng@iphy.ac.cn; Han, Xiufeng [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Fang, Bin; Zhang, Baoshun; Zeng, Zhongming [Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Ruoshui Road 398, Suzhou 215123 (China)

    2015-01-05

    We experimentally study the temperature dependence of the spin-transfer-torque-induced microwave oscillations in MgO-based magnetic tunnel junction nanopillars with a perpendicularly magnetized free layer. We demonstrate that the oscillation frequency increases rapidly with decreasing temperature, which is mainly ascribed to the temperature dependence of both the saturation magnetization and the perpendicular magnetic anisotropy. We also find that a strong temperature dependence of the output power while a nonmonotonic temperature dependence of spectral linewidth are maintained for a constant dc bias in measured temperature range. Possible mechanisms leading to the different dependences of oscillation frequency, output power, and linewidth are discussed.

  16. Perpendicular magnetic tunnel junction with thin CoFeB/Ta/Co/Pd/Co reference layer

    Energy Technology Data Exchange (ETDEWEB)

    Gan, Huadong, E-mail: huadong@avalanche-technology.com; Malmhall, Roger; Wang, Zihui; Yen, Bing K; Zhang, Jing; Wang, Xiaobin; Zhou, Yuchen; Hao, Xiaojie; Jung, Dongha; Satoh, Kimihiro; Huai, Yiming [Avalanche Technology, 46600 Landing Parkway, Fremont, California 94538 (United States)

    2014-11-10

    Integration of high density spin transfer torque magnetoresistance random access memory requires a thin stack (less than 15 nm) of perpendicular magnetic tunnel junction (p-MTJ). We propose an innovative approach to solve this challenging problem by reducing the thickness and/or moment of the reference layer. A thin reference layer structure of CoFeB/Ta/Co/Pd/Co has 60% magnetic moment of the conventional thick structure including [Co/Pd] multilayers. We demonstrate that the perpendicular magnetization of the CoFeB/Ta/Co/Pd/Co structure can be realized by anti-ferromagnetically coupling to a pinned layer with strong perpendicular anisotropy via Ruderman-Kittel-Kasuya-Yosida exchange interaction. The pMTJ with thin CoFeB/Ta/Co/Pd/Co reference layer has a comparable TMR ratio (near 80%) as that with thick reference layer after annealing at 280 °C. The pMTJ with thin reference layer has a total thickness less than 15 nm, thereby significantly increasing the etching margin required for integration of high density pMTJ array on wafers with form factor of 300 mm and beyond.

  17. High perpendicular hard magnetic properties of nanocomposite Co-rich Co-Pt/Pt double-layered films by epitaxial deposition without capped layer

    Energy Technology Data Exchange (ETDEWEB)

    Chen, S.C., E-mail: chensc@mail.mcut.edu.t [Department of Materials Engineering, MingChi University of Technology, Taipei 243, Taiwan (China); Kuo, P.C.; Shen, C.L.; Hsu, S.L.; Fang, Y.H.; Lin, G.P.; Huang, K.T. [Institute of Materials Science and Engineering, National Taiwan University, Taipei 106, Taiwan (China)

    2009-07-01

    The HRTEM cross-sectional lattice image shows that a well epitaxial growth of hcp Co-rich Co-Pt (002) on Pt (111) underlayer leads to good perpendicular magnetic anisotropy of Co-rich Co-Pt film. It is found that both the perpendicular coercivity (Hc{sub perpendicular}) and perpendicular squareness (S{sub perpendicular}) of Co-rich Co-Pt films without Pt capped layer are larger than that of Co-rich Co-Pt films with Pt capped layer. The cross-sectional TEM-EDS and AES analysis confirm that the oxygen atoms will diffuse from film surface into the Co-rich Co-Pt film without adding Pt capped layer, and it react with cobalt atoms to form CoO, which is detected by XPS analysis. The increase in perpendicular hard magnetic properties of Co-rich Co-Pt film without Pt capped layer is mainly due to form CoO in the Co-rich Co-Pt film.

  18. Very strong antiferromagnetic interlayer exchange coupling with iridium spacer layer for perpendicular magnetic tunnel junctions

    Science.gov (United States)

    Yakushiji, Kay; Sugihara, Atsushi; Fukushima, Akio; Kubota, Hitoshi; Yuasa, Shinji

    2017-02-01

    We systematically studied the interlayer exchange coupling (IEC) in a perpendicular synthetic antiferromagnetically coupled structure having an Ir spacer layer for perpendicular magnetic tunnel junctions (p-MTJs). We found a broader peak in IEC energy density (Jex) versus spacer thickness (tIr) compared with the case of using a Ru spacer. The highest IEC energy density was 2.6 erg/cm2 at a tIr of about 5 nm. The p-MTJ nanopillars had a high magnetoresistance ratio (131%) as well as a high spin-transfer torque (STT) switching efficiency (about 2). An Ir spacer can be used to make a stable reference layer for STT magnetoresistive random access memory.

  19. Implantation-Free 4H-SiC Bipolar Junction Transistors with Double Base Epi-layers

    Science.gov (United States)

    2007-05-14

    gain 4H-SiC NPN power bipolar junction transistor ,” IEEE Electron Device Letters, vol. 24, pp. 327-329, May 2003. [3] C.-F. Huang and J. A. Cooper...Jr., “High current gain 4H-SiC NPN Bipolar Junction Transistors ,” IEEE Electron Device Letters, vol. 24, pp. 396-398, Jun. 2003. [4] Sumi...Implantation-Free 4H-SiC Bipolar Junction Transistors with Double Base Epi-layers Jianhui Zhang, member, IEEE, Xueqing, Li, Petre Alexandrov

  20. Carrier dynamics and design optimization of electrolyte-induced inversion layer carbon nanotube-silicon Schottky junction solar cell

    Science.gov (United States)

    Chen, Wenchao; Seol, Gyungseon; Rinzler, Andrew G.; Guo, Jing

    2012-03-01

    Carrier dynamics of the electrolyte-induced inversion layer carbon nanotube-silicon Schottky junction solar cells is explored by numerical simulations. Operation mechanisms of the solar cells with and without the electrolyte-induced inversion layer are presented and compared, which clarifies the current flow mechanisms in a solar cell with an induced inversion layer. A heavily doped back contact layer can behave as a hole block layer. In addition to lowering contact resistance and surface recombination, it is particularly useful for improving carrier separation in an electrolyte-induced inversion layer solar cell or a metal-insulator-semiconductor grating solar cell.

  1. Correlation of the asymmetrical retreat of the south polar cap and the polar layered terrain on Mars

    Science.gov (United States)

    Narumi, Y.; Iwasaki, K.

    2005-08-01

    During the southern springtime, the south polar cap retreats more rapidly in the polar region between longitudes 150W and 300W, compared with the other part of the southern polar region. The reason for this rapid retreat has remained enigmatic for a long time. Recently, Colaprete et al. (2005) proposed that the asymmetrical behavior of the south polar cap is caused by topographic forcing of atmospheric dynamics by the large basins, Argyre and Hellas. These results calculated by the Mars General Circulation Model (MGCM) may be correct on the large-scale phenomena of Mars. However, we would like to point out that this region of rapid retreat is almost coincident with the extent of the southern polar layered terrain, and propose that the polar layered terrain would play some distinct role in the asymmetrical retreat of the south polar cap. The north and south polar layered terrains are characterized by about 3 km of relief and are believed to be composed primarily of water ice mixed with dust. Because of the abundant amount of water ice, the thermal inertia of the polar layered terrain may be higher than the usual surface soil on Mars. Our preliminary model calculation shows that a higher value of thermal inertia results in less precipitation of the surface carbon dioxide ice. We expect that a higher value of thermal inertia for the polar layered terrain could explain the asymmetric retreat of the south polar cap, with its reduced quantity and delayed carbon dioxide ice deposit during winter, and earlier evaporation of ice in the southern springtime.

  2. Double layered self-expanding metal stents for malignant esophageal obstruction, especially across the gastroesophageal junction

    Institute of Scientific and Technical Information of China (English)

    Min Dae Kim; Su Bum Park; Dae Hwan Kang; Jae Hyung Lee; Cheol Woong Choi; Hyung Wook Kim; Chung Uk Chung

    2012-01-01

    AIM:TO evaluate the clinical outcomes of double-layered self-expanding metal stents (SEMS) for treatment of malignant esophageal obstruction according to whether SEMS crosses the gastroesophageal junction (GEJ).METHODS:Forty eight patients who underwent the SEMS insertion for malignant esophageal obstruction were enrolled.Patients were classified as GEJ group (SEMS across GEHm 18 patients) and non-GEJ group (SEMS above GEJ,30 patients) according to SEMS position.Double layered (outer uncovered and inner covered stent) esophageal stents were placed.RESULTS:The SEMS insertion and the clinical improvement were achieved in all patients in both groups.Stent malfunction occurred in seven patients in the GEJ group and nine patients in the non-GEJ group.Tumor overgrowth occurred in five and eight patients,respectively,food impaction occurred in one patient in each group,and stent migration occurred in one and no patient,respectively.There were no significant differences between the two groups.Reflux esophagitis occurred more frequently in the GEJ group (eight vs five patients,P =0.036) and was controlled by proton pump inhibitor.Aspiration pneumonia occurred in zero and five patients,respectively,and tracheoesophageal fistula occurred in zero and two patients,respectively.CONCLUSION:Double-layered SEMS are a feasible and effective treatment when placed across the GEJ for malignant esophageal obstruction.Double-layered SEMS provide acceptable complications,especially migration,although reflux esophagitis is more common in the GEJ group.

  3. Capping layer growth rate and the optical and structural properties of GaAsSbN-capped InAs/GaAs quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Ulloa, J. M., E-mail: jmulloa@isom.upm.es; Utrilla, A. D.; Guzman, A.; Hierro, A. [Institute for Systems based on Optoelectronics and Microtechnology (ISOM) and Dpto. Ingeniería Electrónica, Universidad Politecnica de Madrid, Ciudad Universitaria s/n, 28040 Madrid (Spain); Reyes, D. F.; Ben, T.; González, D. [Departamento de Ciencia de los Materiales e IM y QI, Universidad de Cádiz, 11510 Puerto Real (Cádiz) (Spain)

    2014-10-07

    Changing the growth rate during the heteroepitaxial capping of InAs/GaAs quantum dots (QDs) with a 5 nm-thick GaAsSbN capping layer (CL) strongly modifies the QD structural and optical properties. A size and shape transition from taller pyramids to flatter lens-shaped QDs is observed when the CL growth rate is decreased from 1.5 to 0.5 ML/s. This indicates that the QD dissolution processes taking place during capping can be controlled to some extent by the GaAsSbN CL growth rate, with high growth rates allowing a complete preservation of the QDs. However, the dissolution processes are shown to have a leveling effect on the QD height, giving rise to a narrower size distribution for lower growth rates. Contrary to what could be expected, these effects are opposite to the strong blue-shift and improvement of the photoluminescence (PL) observed for higher growth rates. Nevertheless, the PL results can be understood in terms of the strong impact of the growth rate on the Sb and N incorporation into the CL, which results in lower Sb and N contents at higher growth rates. Besides the QD-CL band offsets and QD strain, the different CL composition alters the band alignment of the system, which can be transformed to type-II at low growth rates. These results show the key role of the alloyed CL growth parameters on the resulting QD properties and demonstrate an intricate correlation between the PL spectra and the sample morphology in complex QD-CL structures.

  4. Effects of an InGaAs Cap Layer on the Optical Properties of InAs Quantum Dot Molecules

    Institute of Scientific and Technical Information of China (English)

    TIAN Peng; HUANG Li-Rong; YUAN Xiu-Hua; HUANG De-Xiu

    2011-01-01

    @@ Self-assembled InAs quantum dot molecules are grown on GaAs substrates without following any special protocols by using metal-organic chemical vapor deposition.The effects of indium composition and the thickness of the InGaAs cap layer on the optical properties of InAs quantum dot molecules are investigated by photoluminescence.With increasing indium composition and thickness of the InGaAs cap layer, the ground-state wavelength of the emission spectrum redshifts and the peak intensity decreases.In addition, the structural and optical properties of quantum dots and quantum dot molecules are comparatively studied, and the results show that when quantum dots turn into quantum dot molecules, the emission wavelength red shifts.

  5. Study of the electroplated of Ni for betavoltaic battery using PN junction without seed layer

    Energy Technology Data Exchange (ETDEWEB)

    Uhm, Young Rang; Kim, Jong Bum; Son, Kwang Jae [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of); Cho, Byoung Gun [Electronics and Telecommunications Research Institute, Daejeon (Korea, Republic of)

    2015-10-15

    The mechanism of a nuclear battery is same as the P.N junction diode for solar cell application. The photovoltaic is operated by converting photons into electrical energy in the junction. In a betavoltaic battery, beta particles are collected and converted into electrical energy with a similar principle as a photovoltaic. If a radioisotope (RI) with a long half-life (over 100 years) is used, the lifetime of the power source is extended to as long as the half-life time of the RI. Hence, the power sources we describe could extend a system's operating life by several decades or even a century, during which time the system can gain learned behavior without worrying about the power turning off. The beta spectrum of {sup 63}Ni is below the radiation damage threshold (approximately 200 keV for Si) of semiconductors such as Si and SiC. Beta particles of 63Ni were deposited by electroplating on the Ni-foil substrate and attached on the trench P-N absorber with a spacing of 50 μm. The optimum total thickness of the 63Ni layer was determined to be about 2 μm, when regarding the minimum self-shielding effect of the beta-ray (β-ray). The optimum condition of the electroplating {sup 63}Ni was determined at current density of 20 mA/cm{sup 2}.

  6. Band engineering in a van der Waals heterostructure using a 2D polar material and a capping layer

    Science.gov (United States)

    Cho, Sung Beom; Chung, Yong-Chae

    2016-06-01

    Van der Waals (vdW) heterostructures are expected to play a key role in next-generation electronic and optoelectronic devices. In this study, the band alignment of a vdW heterostructure with 2D polar materials was studied using first-principles calculations. As a model case study, single-sided fluorographene (a 2D polar material) on insulating (h-BN) and metallic (graphite) substrates was investigated to understand the band alignment behavior of polar materials. Single-sided fluorographene was found to have a potential difference along the out-of-plane direction. This potential difference provided as built-in potential at the interface, which shift the band alignment between h-BN and graphite. The interface characteristics were highly dependent on the interface terminations because of this built-in potential. Interestingly, this band alignment can be modified with a capping layer of graphene or BN because the capping layer triggered electronic reconstruction near the interface. This is because the bonding nature is not covalent, but van der Waals, which made it possible to avoid Fermi-level pinning at the interface. The results of this study showed that diverse types of band alignment can be achieved using polar materials and an appropriate capping layer.

  7. Experimental and theoretical investigation of the effect of SiO2 content in gate dielectrics on work function shift induced by nanoscale capping layers

    KAUST Repository

    Caraveo-Frescas, J. A.

    2012-09-10

    The impact of SiO2 content in ultrathin gate dielectrics on the magnitude of the effective work function (EWF) shift induced by nanoscale capping layers has been investigated experimentally and theoretically. The magnitude of the effective work function shift for four different capping layers (AlN, Al2O3, La2O3, and Gd2O3) is measured as a function of SiO2 content in the gate dielectric. A nearly linear increase of this shift with SiO2 content is observed for all capping layers. The origin of this dependence is explained using density functional theory simulations.

  8. Field theoretical model of multi-layered Josephson junction and dynamics of Josephson vortices

    CERN Document Server

    Fujimori, Toshiaki; Nitta, Muneto

    2016-01-01

    Multi-layered Josephson junctions are modeled in the context of a field theory, and dynamics of Josephson vortices trapped inside insulators are studied. Starting from a theory consisting of complex and real scalar fields coupled to a U(1) gauge field which admit parallel $N-1$ domain-wall solutions, Josephson couplings are introduced weakly between the complex scalar fields. The $N-1$ domain walls behave as insulators separating $N$ superconductors. We construct the effective Lagrangian on the domain walls, which reduces to a coupled sine-Gordon model for well-separated walls and contains more interactions for walls at short distance. We then construct sine-Gordon solitons emerging in the effective theory that we identify Josephson vortices carrying singly quantized magnetic fluxes. When two neighboring superconductors tend to have the same phase, the ground state does not change with the positions of domain walls. On the other hand, when two neighboring superconductors tend to have the $\\pi$ phase differenc...

  9. Singular layers for transmission problems in thin shallow shell theory: Elastic junction case

    Science.gov (United States)

    Merabet, Ismail; Chacha, D. A.; Nicaise, Serge

    2010-05-01

    In this Note we study two-dimensional transmission problems for the linear Koiter's model of an elastic multi-structure composed of two thin shallow shells with the same thickness ɛ≪1, in the elastic junction case. We suppose that the loading is singular, that the elastic coefficients are of different order on each part ( O(ɛ) and O(1) respectively) and that the elastic stiffness coefficient of the hinge is k=O(ɛ). The formal limit problem fails to give a solution satisfying all boundary and transmission conditions; it gives only the outer solution. We derive the inner limit problem which allows us to describe the transmission layer.

  10. Double-pinned magnetic tunnel junction sensors with spin-valve-like sensing layers

    Energy Technology Data Exchange (ETDEWEB)

    Yuan, Z. H.; Huang, L.; Feng, J. F., E-mail: jiafengfeng@iphy.ac.cn; Wen, Z. C.; Li, D. L.; Han, X. F. [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, P. O. Box 603, Beijing 100190 (China); Nakano, Takafumi; Naganuma, Hiroshi, E-mail: naganuma@mlab.apph.tohoku.ac.jp [Department of Applied Physics, Tohoku University, Sendai, Miyagi 980-8579 (Japan); Yu, T. [Department of Applied Physics, Tohoku University, Sendai, Miyagi 980-8579 (Japan); College of Physical Science and Technology, Sichuan University, Chengdu 610064 (China)

    2015-08-07

    MgO magnetic tunnel junction (MTJ) sensors with spin-valve-like sensing layers of Ir{sub 22}Mn{sub 78} (6)/Ni{sub 80}Fe{sub 20} (t{sub NiFe} = 20–70)/Ru (0.9)/Co{sub 40}Fe{sub 40}B{sub 20} (3) (unit: nm) have been fabricated. A linear field dependence of magnetoresistance for these MTJ sensors was obtained by carrying out a two-step field annealing process. The sensitivity and linear field range can be tuned by varying the thickness of NiFe layer and annealing temperature, and a high sensitivity of 37%/mT has been achieved in the MTJ sensors with 70 nm NiFe at the optimum annealing temperature of 230 °C. Combining the spin-valve-like sensing structure and a soft magnetic NiFe layer, MTJ sensors with relatively wide field sensing range have been achieved and could be promising for showing high sensitivity magnetic field sensing applications.

  11. Epitaxial NbN/AlN/NbN tunnel junctions on Si substrates with TiN buffer layers

    Directory of Open Access Journals (Sweden)

    Rui Sun

    2016-06-01

    Full Text Available We have developed epitaxial NbN/AlN/NbN tunnel junctions on Si (100 substrates with a TiN buffer layer. A 50-nm-thick (200-oriented TiN thin film was introduced as the buffer layer for epitaxial growth of NbN/AlN/NbN trilayers on Si substrates. The fabricated NbN/AlN/NbN junctions demonstrated excellent tunneling properties with a high gap voltage of 5.5 mV, a large IcRN product of 3.8 mV, a sharp quasiparticle current rise with a ΔVg of 0.4 mV, and a small subgap leakage current. The junction quality factor Rsg/RN was about 23 for the junction with a Jc of 47 A/cm2 and was about 6 for the junction with a Jc of 3.0 kA/cm2. X-ray diffraction and transmission electron microscopy observations showed that the NbN/AlN/NbN trilayers were grown epitaxially on the (200-orientated TiN buffer layer and had a highly crystalline structure with the (200 orientation.

  12. Effects of the strain relaxation of an AlGaN barrier layer induced by various cap layers on the transport properties in AlGaN/GaN heterostructures

    Institute of Scientific and Technical Information of China (English)

    Liu Zi-Yang; Zhang Jin-Cheng; Duan Huan-Tao; Xue Jun-Shuai; Lin Zhi-Yu; Ma Jun-Cai; Xue Xiao-Yong; Hao Yue

    2011-01-01

    The strain relaxation of an AlGaN barrier layer may be influenced by a thin cap layer above,and affects the transport properties of AlGaN/GaN heterostructures. Compared with the slight strain relaxation found in AlGaN barrier layer without cap layer,it is found that a thin cap layer can induce considerable changes of strain state in the AIGaN barrier layer. The degree of relaxation of the AlGaN layer significantly influences the transport properties of the two-dimensional electron gas (2DEG) in AlGaN/GaN heterostructures. It is observed that electron mobility decreases with the increasing degree of relaxation of the AlGaN barrier,which is believed to be the main cause of the deterioration of crystalline quality and morphology on the AlGaN/GaN interface. On the other hand,both GaN and AIN cap layers lead to a decrease in 2DEG density. The reduction of 2DEG caused by the GaN cap layer may be attributed to the additional negative polarization charges formed at the interface between GaN and AIGaN,while the reduction of the piezoelectric effect in the AlGaN layer results in the decrease of 2DEG density in the case of AIN cap layer.

  13. On the Structure and Adjustment of Inversion-Capped Neutral Atmospheric Boundary-Layer Flows: Large-Eddy Simulation Study

    DEFF Research Database (Denmark)

    Pedersen, Jesper Grønnegaard; Gryning, Sven-Erik; Kelly, Mark C.

    2014-01-01

    A range of large-eddy simulations, with differing free atmosphere stratification and zero or slightly positive surface heat flux, is investigated to improve understanding of the neutral and near-neutral, inversion-capped, horizontally homogeneous, barotropic atmospheric boundary layer with emphasis...... on the upper region. We find that an adjustment time of at least 16 h is needed for the simulated flow to reach a quasi-steady state. The boundary layer continues to grow, but at a slow rate that changes little after 8 h of simulation time. A common feature of the neutral simulations is the development...... of a super-geostrophic jet near the top of the boundary layer. The analytical wind-shear models included do not account for such a jet, and the best agreement with simulated wind shear is seen in cases with weak stratification above the boundary layer. Increasing the surface heat flux decreases the magnitude...

  14. Improving the Efficiency Enhancement of Photonic Crystal Based InGaN Solar Cell by Using a GaN Cap Layer

    Directory of Open Access Journals (Sweden)

    T. F. Gundogdu

    2014-01-01

    Full Text Available We studied a high indium content (0.8 InGaN based solar cell design where the active InGaN layer is sandwiched between a GaN cap layer and a GaN spacer layer. The incorporation of the sacrificial cap layer allows for the etching of the front surface without removing the active InGaN resulting in a 50% enhancement of the short-circuit current density for a 15 nm-thick InGaN layer.

  15. Surface state of GaN after rapid-thermal-annealing using AlN cap-layer

    Science.gov (United States)

    El-Zammar, G.; Khalfaoui, W.; Oheix, T.; Yvon, A.; Collard, E.; Cayrel, F.; Alquier, D.

    2015-11-01

    Critical issues need to be overcome to produce high performance Schottky diodes on gallium nitride (GaN). To activate dopant, high temperature thermal treatments are required but damage GaN surface where hexagonal pits appear and prevent any device processing. In this paper, we investigated the efficiency of cap-layers on GaN during thermal treatments to avoid degradation. Aluminum nitride (AlN) and silicon oxide (SiOx) were grown on GaN by direct current reactive magnetron sputtering and plasma-enhanced chemical vapor deposition, respectively. AlN growth parameters were studied to understand their effect on the grown layers and their protection efficiency. Focused ion beam was used to measure AlN layer thickness. Crystalline quality and exact composition were verified using X-ray diffraction and energy dispersive X-ray spectroscopy. Two types of rapid thermal annealing at high temperatures were investigated. Surface roughness and pits density were evaluated using atomic force microscopy and scanning electron microscopy. Cap-layers wet etching was processed in H3PO4 at 120 °C for AlN and in HF (10%) for SiOx. This work reveals effective protection of GaN during thermal treatments at temperatures as high as 1150 °C. Low surface roughness was obtained. Furthermore, no hexagonal pit was observed on the surface.

  16. CdSe quantum dot formation: alternative paths to relaxation of a strained CdSe layer and influence of the capping conditions.

    Science.gov (United States)

    Robin, I C; Aichele, T; Bougerol, C; André, R; Tatarenko, S; Bellet-Amalric, E; Van Daele, B; Van Tendeloo, G

    2007-07-01

    CdSe/ZnSe quantum dot formation is investigated by studying different steps of the growth. To precisely control the critical thickness of CdSe grown on a ZnSe buffer layer, the CdSe self-regulated growth rate in atomic layer epitaxy growth mode is determined by reflection high-energy electron diffraction (RHEED) measurements for a temperature range between 180 and 280 °C. Then, the two-dimensional-three-dimensional (2D-3D) transition of a strained CdSe layer on (001)-ZnSe induced by the use of amorphous selenium is studied. The formation of CdSe islands is found when 3 monolayers (ML) of CdSe are deposited. When only 2.5 ML of CdSe are deposited, another relaxation mechanism is observed, leading to the appearance of strong undulations on the surface. We also studied the evolution of the surface morphology when 2.7 ML are deposited, to study the boundary between those two phenomena. The influence of capping on quantum dot morphology is investigated. It is found that cadmium is redistributed within the layer during capping. Our results show that the cadmium distribution after capping depends on the capping temperature and on the strain of the CdSe layer. Cadmium incorporation after capping is also studied. It is found that the amount of incorporated cadmium depends on the strain of the CdSe layer before capping.

  17. CdSe quantum dot formation: alternative paths to relaxation of a strained CdSe layer and influence of the capping conditions

    Energy Technology Data Exchange (ETDEWEB)

    Robin, I C [CEA-CNRS-UJF ' Nanophysics and Semiconductors' Group Laboratoire de Spectrometrie Physique/CNRS UMR5588, Universite J. Fourier, Grenoble, BP87, 38402 St Martin d' Heres (France); Aichele, T [CEA-CNRS-UJF ' Nanophysics and Semiconductors' Group Laboratoire de Spectrometrie Physique/CNRS UMR5588, Universite J. Fourier, Grenoble, BP87, 38402 St Martin d' Heres (France); Bougerol, C [CEA-CNRS-UJF ' Nanophysics and Semiconductors' Group Laboratoire de Spectrometrie Physique/CNRS UMR5588, Universite J. Fourier, Grenoble, BP87, 38402 St Martin d' Heres (France); Andre, R [CEA-CNRS-UJF ' Nanophysics and Semiconductors' Group Laboratoire de Spectrometrie Physique/CNRS UMR5588, Universite J. Fourier, Grenoble, BP87, 38402 St Martin d' Heres (France); Tatarenko, S [CEA-CNRS-UJF ' Nanophysics and Semiconductors' Group Laboratoire de Spectrometrie Physique/CNRS UMR5588, Universite J. Fourier, Grenoble, BP87, 38402 St Martin d' Heres (France); Bellet-Amalric, E [CEA-CNRS-UJF ' Nanophysics and Semiconductors' Group, Departement de Recherche Fondamentale sur la Matiere Condensee/SP2M CEA Grenoble, 17 rue des Martyrs, 38054 Grenoble cedex 9 (France); Daele, B Van [IMEC, Kapeldreef 75, 3001 Leuven (Belgium); Tendeloo, G van [EMAT University of Antwerp (RUCA), Groenenborgerlaan 171, 2020 Antwerp (Belgium)

    2007-07-04

    CdSe/ZnSe quantum dot formation is investigated by studying different steps of the growth. To precisely control the critical thickness of CdSe grown on a ZnSe buffer layer, the CdSe self-regulated growth rate in atomic layer epitaxy growth mode is determined by reflection high-energy electron diffraction (RHEED) measurements for a temperature range between 180 and 280 deg. C. Then, the two-dimensional-three-dimensional (2D-3D) transition of a strained CdSe layer on (001)-ZnSe induced by the use of amorphous selenium is studied. The formation of CdSe islands is found when 3 monolayers (ML) of CdSe are deposited. When only 2.5 ML of CdSe are deposited, another relaxation mechanism is observed, leading to the appearance of strong undulations on the surface. We also studied the evolution of the surface morphology when 2.7 ML are deposited, to study the boundary between those two phenomena. The influence of capping on quantum dot morphology is investigated. It is found that cadmium is redistributed within the layer during capping. Our results show that the cadmium distribution after capping depends on the capping temperature and on the strain of the CdSe layer. Cadmium incorporation after capping is also studied. It is found that the amount of incorporated cadmium depends on the strain of the CdSe layer before capping.

  18. Direct observation of strain in InAs quantum dots and cap layer during molecular beam epitaxial growth using in situ X-ray diffraction

    Energy Technology Data Exchange (ETDEWEB)

    Shimomura, Kenichi; Ohshita, Yoshio; Kamiya, Itaru, E-mail: kamiya@toyota-ti.ac.jp [Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468-8511 (Japan); Suzuki, Hidetoshi [Faculty of Engineering, University of Miyazaki, 1-1 Gakuen Kibanadai-nishi, Miyazaki 889-2192 (Japan); Sasaki, Takuo; Takahasi, Masamitu [Quantum Beam Science Center, Japan Atomic Energy Agency, Koto 1-1-1, Sayo-cho, Hyogo 679-5148 (Japan)

    2015-11-14

    Direct measurements on the growth of InAs quantum dots (QDs) and various cap layers during molecular beam epitaxy are performed by in situ X-ray diffraction (XRD). The evolution of strain induced both in the QDs and cap layers during capping is discussed based on the XRD intensity transients obtained at various lattice constants. Transients with different features are observed from those obtained during InGaAs and GaAs capping. The difference observed is attributed to In-Ga intermixing between the QDs and the cap layer under limited supply of In. Photoluminescence (PL) wavelength can be tuned by controlling the intermixing, which affects both the strain induced in the QDs and the barrier heights. The PL wavelength also varies with the cap layer thickness. A large redshift occurs by reducing the cap thickness. The in situ XRD observation reveals that this is a result of reduced strain. We demonstrate how such information about strain can be applied for designing and preparing novel device structures.

  19. Improving the Microstructure and Electrical Properties of Aluminum Induced Polysilicon Thin Films Using Silicon Nitride Capping Layer

    Directory of Open Access Journals (Sweden)

    Min-Hang Weng

    2014-01-01

    Full Text Available We investigated the capping layer effect of SiNx (silicon nitride on the microstructure, electrical, and optical properties of poly-Si (polycrystalline silicon prepared by aluminum induced crystallization (AIC. The primary multilayer structure comprised Al (30 nm/SiNx (20 nm/a-Si (amorphous silicon layer (100 nm/ITO coated glass and was then annealed in a low annealing temperature of 350°C with different annealing times, 15, 30, 45, and 60 min. The crystallization properties were analyzed and verified by X-ray diffraction (XRD and Raman spectra. The grain growth was analyzed via optical microscope (OM and scanning electron microscopy (SEM. The improved electrical properties such as Hall mobility, resistivity, and dark conductivity were investigated by using Hall and current-voltage (I-V measurements. The results show that the amorphous silicon film has been effectively induced even at a low temperature of 350°C and a short annealing time of 15 min and indicate that the SiNx capping layer can improve the grain growth and reduce the metal content in the induced poly-Si film. It is found that the large grain size is over 20 μm and the carrier mobility values are over 80 cm2/V-s.

  20. Bioturbation delays attenuation of DDT by clean sediment cap but promotes sequestration by thin-layered activated carbon.

    Science.gov (United States)

    Lin, Diana; Cho, Yeo-Myoung; Werner, David; Luthy, Richard G

    2014-01-21

    The effects of bioturbation on the performance of attenuation by sediment deposition and activated carbon to reduce risks from DDT-contaminated sediment were assessed for DDT sediment-water flux, biouptake, and passive sampler (PE) uptake in microcosm experiments with a freshwater worm, Lumbriculus variegatus. A thin-layer of clean sediment (0.5 cm) did not reduce the DDT flux when bioturbation was present, while a thin (0.3 cm) AC cap was still capable of reducing the DDT flux by 94%. Bioturbation promoted AC sequestration by reducing the 28-day DDT biouptake (66%) and DDT uptake into PE (>99%) compared to controls. Bioturbation further promoted AC-sediment contact by mixing AC particles into underlying sediment layers, reducing PE uptake (55%) in sediment compared to the AC cap without bioturbation. To account for the observed effects from bioturbation, a mass transfer model together with a biodynamic model were developed to simulate DDT flux and biouptake, respectively, and models confirmed experimental results. Both experimental measurements and modeling predictions imply that thin-layer activated carbon placement on sediment is effective in reducing the risks from contaminated sediments in the presence of bioturbation, while natural attenuation process by clean sediment deposition may be delayed by bioturbation.

  1. Enhancement of L10 ordering with the c-axis perpendicular to the substrate in FePt alloy film by using an epitaxial cap-layer

    Science.gov (United States)

    Ohtake, Mitsuru; Nakamura, Masahiro; Futamoto, Masaaki; Kirino, Fumiyoshi; Inaba, Nobuyuki

    2017-05-01

    FePt alloy thin films with cap-layers of MgO or C are prepared on MgO(001) single-crystal substrates by using a two-step method consisting of low-temperature deposition at 200 °C followed by high-temperature annealing at 600 °C. The FePt film thickness is fixed at 10 nm, whereas the cap-layer thickness is varied from 1 to 10 nm. The influences of cap-layer material and cap-layer thickness on the variant structure and the L10 ordering are investigated. Single-crystal FePt(001) films with disordered fcc structure (A1) grow epitaxially on the substrates at 200 °C. Single-crystal MgO(001) cap-layers grow epitaxially on the FePt films, whereas the structure of C cap-layers is amorphous. The phase transformation from A1 to L10 occurs when the films are annealed at 600 °C. The FePt films with MgO cap-layers thicker than 2 nm consist of L10(001) variant with the c-axis perpendicular to the substrate surface, whereas those with C cap-layers involve small volumes of L10(100) and (010) variants with the c-axis lying in the film plane. The in-plane and the out-of-plane lattices are respectively more expanded and contracted in the continuous-lattice MgO/FePt/MgO structure due to accommodations of misfits of FePt film with respect to not only the MgO substrate but also the MgO cap-layer. The lattice deformation promotes phase transformation along the perpendicular direction and L10 ordering. The FePt films consisting of only L10(001) variant show strong perpendicular magnetic anisotropies and low in-plane coercivities. The present study shows that an introduction of epitaxial cap-layer is effective in controlling the c-axis perpendicular to the substrate surface.

  2. The effect of the ferromagnetic metal layer on tunnelling conductance and magnetoresistance in double magnetic planar junctions

    Institute of Scientific and Technical Information of China (English)

    谢征微; 李伯臧; 李玉现

    2002-01-01

    Based on the free-electron approximation, we investigate the effect of the ferromagnetic metal layer on the tunnelling magnetoresistance (TMR) and tunnelling conductance (TC) in the double magnetic tunnel junctions (DMTJs)of the structure NM/FM/Ⅰ(S)/NM/Ⅰ(S)/FM/NM, where FM, NM and Ⅰ(S) represent the ferromagnetic metal, nonmagnetic metal and insulator (semiconductor), respectively. The FM, Ⅰ(S) and inner NM layers are of finite thickness,while the thickness of the outer NM layer is infinite. The calculated results show that, due to the spin-dependent interfacial potential barriers caused by electronic band mismatch between the various magnetic and nonmagnetic layers,the dependences of the TMR and TC on the thicknesses of the FM layers exhibit oscillations, and a much higher TMR can be obtained for suitable thicknesses of FM layers.

  3. Cap Layer Influence on Impurity-Free Vacancy Disordering of InGaAs/InP Quantum Well Structure

    Science.gov (United States)

    An, Yu-Peng; Yang, Hua; Mei, Ting; Wang, Yi-Ding; Teng, Jing-Hua; Xu, Cheng-Dong

    2010-01-01

    Quantum well intermixing (QWI) by the impurity-free vacancy disordering (IFVD) technique is an important and effective approach for the monolithic integration of optoelectronic devices based on InGaAs/InP quantum well structures. We experimentally investigate the influence of the capping layer SiO2 and Si3N4 on the QWI by IFVD. The results show that for all the samples with three-types differently doped (P, N and I) top InP layers, Si3N4 can always induce a larger photoluminescence blueshift than SiO2 in the IFVD QWI process, which attributes more to the group III and V vacancies point defects created in the interface of Si3N4-InP than that of SiO2-InP, proved by the SIMS measurements. The inherent mechanisms for explaining these properties are further discussed.

  4. Gate-tunable diode and photovoltaic effect in an organic-2D layered material p-n junction

    Science.gov (United States)

    Vélez, Saül; Ciudad, David; Island, Joshua; Buscema, Michele; Txoperena, Oihana; Parui, Subir; Steele, Gary A.; Casanova, Fèlix; van der Zant, Herre S. J.; Castellanos-Gomez, Andres; Hueso, Luis E.

    2015-09-01

    The semiconducting p-n junction is a simple device structure with great relevance for electronic and optoelectronic applications. The successful integration of low-dimensional materials in electronic circuits has opened the way forward for producing gate-tunable p-n junctions. In that context, we present here an organic (Cu-phthalocyanine)-2D layered material (MoS2) hybrid p-n junction with both gate-tunable diode characteristics and photovoltaic effect. Our proof-of-principle devices show multifunctional properties with diode rectifying factors of up to 104, while under light exposure they exhibit photoresponse with a measured external quantum efficiency of ~11%. As for their photovoltaic properties, we found open circuit voltages of up to 0.6 V and optical-to-electrical power conversion efficiency of 0.7%. The extended catalogue of known organic semiconductors and two-dimensional materials offer the prospect for tailoring the properties and the performance of the resulting devices, making organic-2D p-n junctions promising candidates for future technological applications.The semiconducting p-n junction is a simple device structure with great relevance for electronic and optoelectronic applications. The successful integration of low-dimensional materials in electronic circuits has opened the way forward for producing gate-tunable p-n junctions. In that context, we present here an organic (Cu-phthalocyanine)-2D layered material (MoS2) hybrid p-n junction with both gate-tunable diode characteristics and photovoltaic effect. Our proof-of-principle devices show multifunctional properties with diode rectifying factors of up to 104, while under light exposure they exhibit photoresponse with a measured external quantum efficiency of ~11%. As for their photovoltaic properties, we found open circuit voltages of up to 0.6 V and optical-to-electrical power conversion efficiency of 0.7%. The extended catalogue of known organic semiconductors and two-dimensional materials

  5. Charging of superconducting layers and resonance-related hysteresis in the current-voltage characteristics of coupled Josephson junctions

    Science.gov (United States)

    Shukrinov, Yu. M.; Gaafar, M. A.

    2011-09-01

    A manifestation of a resonance-type hysteresis related to the parametric resonance in the system of coupled Josephson junctions is demonstrated. In contrast with the McCumber and Steward hysteresis, we find that the width of this hysteresis is inversely proportional to the McCumber parameter and it also depends on the coupling between junctions and the boundary conditions. Investigation of the time dependence of the electric charge in superconducting layers allows us to explain the origin of this hysteresis by different charge dynamics for increasing and decreasing bias current processes. The effect of the wavelength of the longitudinal plasma wave created at the resonance on the charging of superconducting layers is demonstrated. We find a strong effect of the dissipation in the system on the amplitude of the charge oscillations at the resonance.

  6. Study of spin pumping in Co thin film vis-à-vis seed and capping layers using ferromagnetic resonance spectroscopy

    Science.gov (United States)

    Bhusan Singh, Braj; Jena, Sukanta Kumar; Bedanta, Subhankar

    2017-08-01

    We investigated the dependence of the seed (Ta/Pt, Ta/Au) and capping (Pt/Ta, Au/Ta) layers on the spin pumping effect in a 3 nm thick Co thin film using ferromagnetic resonance spectroscopy (FMR). The FMR data were fitted with Kittel’s equation to extract the values of the damping constant and g-factor. A strong dependence of the seed and capping layers on spin pumping has been discussed. The value of the damping constant (α) is found to be relatively large i.e. 0.0326  ±  0.0008 for the Ta(3)/Pt(3)/Co(3)/Pt(3)/Ta(3) (nm) multilayer structure, while it is 0.0104  ±  0.0003 for Ta(3)/Co(3)/Ta(3) (nm). An increase in α is observed, due to the Pt layer that works as a good sink for spins, due to high spin orbit coupling. In addition, we measured the effective spin conductance {{g}\\downarrow \\uparrow }   =  5.82  ±  0.08  ×  1018 m-2 for the structure Ta(3)/Pt(3)/Co(3)/Pt(3)/Ta(3) (nm) as a result of the enhancement in α relative to its bulk value. We observed that the evaluated g-factor decreases as effective demagnetizing magnetic field increases in all of the studied samples. The azimuthal dependence of the magnetic resonance field and line width showed relatively high anisotropy in the tri-layer Ta(3)/Co(3)/Ta(3) (nm) structure.

  7. Investigation of magnetic sensor properties of magnetic tunnel junctions with superparamagnetic free layer at low frequencies for biomedical imaging applications

    Science.gov (United States)

    Ishikawa, Kyohei; Oogane, Mikihiko; Fujiwara, Kousuke; Jono, Junichi; Tsuchida, Masaaki; Ando, Yasuo

    2016-12-01

    The magnetic sensor properties of magnetic tunnel junctions (MTJs) with a superparamagnetic (SP) free layer were systematically investigated at low frequencies (<10 Hz). We prepared four varieties of MTJs with various SP properties by changing the annealing temperature. The temperature dependence of magnetoresistance curves and the signal/noise property at 285 K were evaluated. We found that the SP free layer has the advantage of detecting very small and low-frequency AC magnetic fields compared with a ferromagnetic free layer. The SP free layer strongly suppressed magnetic 1/f noise at low frequencies and expressed a very linear response to a small magnetic field. The obtained properties in MTJs with the SP free layer are suitable for detecting biomagnetic fields. The detectivity was 111 nT at low frequencies (from 0.1 to 10 Hz), which is one of the highest values in single-MTJ sensors.

  8. The exciton-longitudinal-optical-phonon coupling in InGaN/GaN single quantum wells with various cap layer thicknesses

    Institute of Scientific and Technical Information of China (English)

    Hu Xiao-Long; Zhang Jiang-Yong; Shang Jing-Zhi; Liu Wen-Jie; Zhang Bao-Ping

    2010-01-01

    This paper studies the exciton-longitudinal-optical-phonon coupling in InGaN/GaN single quantum wells with various cap layer thicknesses by low temperature photoluminescence (PL) measurements. With increasing cap layer thickness, the PL peak energy shifts to lower energy and the coupling strength between the exciton and longitudinal-optical (LO) phonon, described by Huang-Rhys factor, increases remarkably due to an enhancement of the internal electric field. With increasing excitation intensity, the zero-phonon peak shows a blueshift and the Huang-Rhys factor decreases. These results reveal that there is a large built-in electric field in the well layer and the exciton-LO-phonon coupling is strongly affected by the thickness of the cap layer.

  9. Reducing spin-torque switching current by incorporating an ultra-thin Ta layer with CoFeB free layer in magnetic tunnel junctions

    Energy Technology Data Exchange (ETDEWEB)

    Liu, R. S., E-mail: liurs7204@yahoo.com; Meng, H.; Naik, V. B.; Sim, C. H.; Yap, S.; Luo, P. [Data Storage Institute, A*STAR (Agency for Science Technology and Research), DSI Building, 5 Engineering Drive 1, Singapore 117608 (Singapore)

    2014-12-15

    We studied the spin torque switching in dual MgO layer based magnetic tunnel junctions (MTJs) by incorporating an ultra-thin (0.5 nm) Ta layer at the CoFeB free layer/top MgO layer interface. The Ta incorporated MTJ showed a significant reduction (∼30%) in critical switching current density (J{sub C0} ) as compared to that of the control MTJ whilst maintaining the same tunneling magnetoresistance as well as thermal stability. The reduction of J{sub C0} can be attributed to the perpendicular magnetic anisotropy arising from the incorporation of an ultrathin Ta layer with the MgO|CoFeB structure. This scheme of reducing J{sub C0} without degrading other properties may contribute to the development of spin-transfer-torque magnetic random access memory for low power applications.

  10. Static and dynamic properties of Co2FeAl thin films: Effect of MgO and Ta as capping layers

    Science.gov (United States)

    Husain, Sajid; Barwal, Vineet; Kumar, Ankit; Behera, Nilamani; Akansel, Serkan; Goyat, Ekta; Svedlindh, Peter; Chaudhary, Sujeet

    2017-05-01

    The influence of MgO and Ta capping layers on the static and dynamic magnetic properties of Co2FeAl (CFA) Heusler alloy thin films has been investigated. It is observed that the CFA film deposited with MgO capping layer is preeminent compared to the uncapped or Ta capped CFA film. In particular, the magnetic inhomogeneity contribution to the ferromagnetic resonance line broadening and damping constant are found to be minimal for the MgO capped CFA thin film i.e., 0.12±0.01 Oe and 0.0074±0.00014, respectively. The saturation magnetization was found to be 960±25emu/cc.

  11. Sub-nanometer atomic layer deposition for spintronics in magnetic tunnel junctions based on graphene spin-filtering membranes.

    Science.gov (United States)

    Martin, Marie-Blandine; Dlubak, Bruno; Weatherup, Robert S; Yang, Heejun; Deranlot, Cyrile; Bouzehouane, Karim; Petroff, Frédéric; Anane, Abdelmadjid; Hofmann, Stephan; Robertson, John; Fert, Albert; Seneor, Pierre

    2014-08-26

    We report on the successful integration of low-cost, conformal, and versatile atomic layer deposited (ALD) dielectric in Ni–Al2O3–Co magnetic tunnel junctions (MTJs) where the Ni is coated with a spin-filtering graphene membrane. The ALD tunnel barriers, as thin as 0.6 nm, are grown layer-by-layer in a simple, low-vacuum, ozone-based process, which yields high-quality electron-transport barriers as revealed by tunneling characterization. Even under these relaxed conditions, including air exposure of the interfaces, a significant tunnel magnetoresistance is measured highlighting the robustness of the process. The spin-filtering effect of graphene is enhanced, leading to an almost fully inversed spin polarization for the Ni electrode of −42%. This unlocks the potential of ALD for spintronics with conformal, layer-by-layer control of tunnel barriers in magnetic tunnel junctions toward low-cost fabrication and down-scaling of tunnel resistances.

  12. Gate-tunable diode and photovoltaic effect in an organic-2D layered material p-n junction.

    Science.gov (United States)

    Vélez, Saül; Ciudad, David; Island, Joshua; Buscema, Michele; Txoperena, Oihana; Parui, Subir; Steele, Gary A; Casanova, Fèlix; van der Zant, Herre S J; Castellanos-Gomez, Andres; Hueso, Luis E

    2015-10-07

    The semiconducting p-n junction is a simple device structure with great relevance for electronic and optoelectronic applications. The successful integration of low-dimensional materials in electronic circuits has opened the way forward for producing gate-tunable p-n junctions. In that context, we present here an organic (Cu-phthalocyanine)-2D layered material (MoS2) hybrid p-n junction with both gate-tunable diode characteristics and photovoltaic effect. Our proof-of-principle devices show multifunctional properties with diode rectifying factors of up to 10(4), while under light exposure they exhibit photoresponse with a measured external quantum efficiency of ∼11%. As for their photovoltaic properties, we found open circuit voltages of up to 0.6 V and optical-to-electrical power conversion efficiency of 0.7%. The extended catalogue of known organic semiconductors and two-dimensional materials offer the prospect for tailoring the properties and the performance of the resulting devices, making organic-2D p-n junctions promising candidates for future technological applications.

  13. TUNNEL MAGNETORESISTANCE IN THE FERROMAGNETIC TUNNEL JUNCTION WITH FERROMAGNETIC LAYERS OF FINITE THICKNESS SUBJECTED TO AN ELECTRIC FIELD

    Institute of Scientific and Technical Information of China (English)

    1998-01-01

    Based on the two-band model, we investigate the tunnel magnetoresistance(TMR) in ferromagnet/insulator(semiconductor)/ferromagnet(FM/I(S)/FM) tunnel junction covered on both sides by nonmagnetic metal layers subjected to an electric field. Our results show that TMR oscillates with the thickness of ferromagnetic layers owing to the quantum-size effect and can reach very large value under suitable conditions, which may in general not be reached in FM/I(S)/FM with infinitely thick ferromagnetic layer. Although the electric field causes the change of the oscillation period, phase and amplitude of the TMR, a large TMR is still obtained in some situations with the electric field. Furthermore, the electric field does not change the feature that TMR varies monotonously with the change of magnetization angle of the middle ferromagnetic layer.

  14. Al capping layers for nondestructive x-ray photoelectron spectroscopy analyses of transition-metal nitride thin films

    Energy Technology Data Exchange (ETDEWEB)

    Greczynski, Grzegorz, E-mail: grzgr@ifm.liu.se; Hultman, Lars [Thin Film Physics Division, Department of Physics (IFM), Linköping University, SE-581 83 Linköping (Sweden); Petrov, Ivan [Thin Film Physics Division, Department of Physics (IFM), Linköping University, SE-581 83 Linköping, Sweden and Materials Science Department and Frederick Seitz Materials Research Laboratory, University of Illinois, Urbana, Illinois 61801 (United States); Greene, J. E. [Thin Film Physics Division, Department of Physics (IFM), Linköping University, SE-581 83 Linköping (Sweden); Materials Science Department and Frederick Seitz Materials Research Laboratory, University of Illinois, Urbana, Illinois 61801(United States); Department of Physics, University of Illinois, Urbana, Illinois 61801 (United States)

    2015-09-15

    X-ray photoelectron spectroscopy (XPS) compositional analyses of materials that have been air exposed typically require ion etching in order to remove contaminated surface layers. However, the etching step can lead to changes in sample surface and near-surface compositions due to preferential elemental sputter ejection and forward recoil implantation; this is a particular problem for metal/gas compounds and alloys such as nitrides and oxides. Here, the authors use TiN as a model system and compare XPS analysis results from three sets of polycrystalline TiN/Si(001) films deposited by reactive magnetron sputtering in a separate vacuum chamber. The films are either (1) air-exposed for ≤10 min prior to insertion into the ultrahigh-vacuum (UHV) XPS system; (2) air-exposed and subject to ion etching, using different ion energies and beam incidence angles, in the XPS chamber prior to analysis; or (3) Al-capped in-situ in the deposition system prior to air-exposure and loading into the XPS instrument. The authors show that thin, 1.5–6.0 nm, Al capping layers provide effective barriers to oxidation and contamination of TiN surfaces, thus allowing nondestructive acquisition of high-resolution core-level spectra representative of clean samples, and, hence, correct bonding assignments. The Ti 2p and N 1s satellite features, which are sensitive to ion bombardment, exhibit high intensities comparable to those obtained from single-crystal TiN/MgO(001) films grown and analyzed in-situ in a UHV XPS system and there is no indication of Al/TiN interfacial reactions. XPS-determined N/Ti concentrations acquired from Al/TiN samples agree very well with Rutherford backscattering and elastic recoil analysis results while ion-etched air-exposed samples exhibit strong N loss due to preferential resputtering. The intensities and shapes of the Ti 2p and N 1s core level signals from Al/TiN/Si(001) samples do not change following long-term (up to 70 days) exposure to ambient conditions

  15. Anomalous positive flatband voltage shifts in metal gate stacks containing rare-earth oxide capping layers

    KAUST Repository

    Caraveo-Frescas, J. A.

    2012-03-09

    It is shown that the well-known negative flatband voltage (VFB) shift, induced by rare-earth oxide capping in metal gate stacks, can be completely reversed in the absence of the silicon overlayer. Using TaN metal gates and Gd2O3-doped dielectric, we measure a ∼350 mV negative shift with the Si overlayer present and a ∼110 mV positive shift with the Si overlayer removed. This effect is correlated to a positive change in the average electrostatic potential at the TaN/dielectric interface which originates from an interfacial dipole. The dipole is created by the replacement of interfacial oxygen atoms in the HfO2 lattice with nitrogen atoms from TaN.

  16. Effects of cap layer on ohmic Ti/Al contacts to Si{sup +} implanted GaN

    Energy Technology Data Exchange (ETDEWEB)

    Placidi, Marcel, E-mail: marcel.placidi@cnm.es [Centre Nacional de Microelectronica (IMB-CNM-CSIC), Campus UAB, System Integration, 08193 Barcelona (Spain); Perez-Tomas, A.; Constant, A.; Rius, G. [Centre Nacional de Microelectronica (IMB-CNM-CSIC), Campus UAB, System Integration, 08193 Barcelona (Spain); Mestres, N. [Institut de Ciencia de Materials (ICMAB-CSIC), Campus UAB, 08193 Barcelona (Spain); Millan, J.; Godignon, P. [Centre Nacional de Microelectronica (IMB-CNM-CSIC), Campus UAB, System Integration, 08193 Barcelona (Spain)

    2009-04-01

    A low resistivity ohmic contact to Si-implanted GaN was achieved using a metal combination of Ti/Al. The effect of a protection cap during post-implantation annealing is investigated, and how it affects the specific contact resistivity ({rho}{sub c}). Relevant differences between the protected (PR) sample with SiO{sub 2} and unprotected (UP) sample during the post-implantation annealing were observed after metal alloying at 700 deg. C. The lower values of {rho}{sub c} have been obtained for UP sample, but with very low reproducibility. In contrast, SiO{sub 2} cap layer has demonstrated its relevance in yielding a much more uniformity of a relatively low {rho}{sub c} around 10{sup -5} {Omega} cm{sup 2}. Related mechanism for the uniformity in {rho}{sub c} was discussed based on the results obtained from electrical measurements, XRD (X-ray diffraction) analysis, AFM (atomic force microscopy) and SEM (scanning electron microscopy) observations.

  17. Tamm plasmon-polariton with negative group velocity induced by a negative index meta-material capping layer at metal-Bragg reflector interface.

    Science.gov (United States)

    Liu, Cunding; Kong, Mingdong; Li, Bincheng

    2014-05-05

    Influence of a negative refractive index meta-material (NIM) capping layer on properties of Tamm plasmon-polariton at the interface of metal-Bragg reflector structure is investigated. Conditions for excitation of the plasmon-polariton is determined from reflectivity mapping calculation and analyzed with cavity mode theory. For specific thicknesses of capping layers, Tamm plasmon-polariton with negative group velocity is revealed in a wide region of frequency. Different from backward optical propagation induced by negative effective-group-refractive-index in dispersive media, negative group velocity of Tamm plasmon-polariton results from opposite signs of cross-section-integrated field energy and Poynting vector.

  18. Ultrastable BSA-capped gold nanoclusters with a polymer-like shielding layer against reactive oxygen species in living cells

    Science.gov (United States)

    Zhou, Wenjuan; Cao, Yuqing; Sui, Dandan; Guan, Weijiang; Lu, Chao; Xie, Jianping

    2016-05-01

    The prevalence of reactive oxygen species (ROS) production and the enzyme-containing intracellular environment could lead to the fluorescence quenching of bovine serum albumin (BSA)-capped gold nanoclusters (AuNCs). Here we report an efficient strategy to address this issue, where a polymer-like shielding layer is designed to wrap around the Au core to significantly improve the stability of AuNCs against ROS and protease degradation. The key of our design is to covalently incorporate a thiolated AuNC into the BSA-AuNC via carbodiimide-activated coupling, leading to the formation of a AuNC pair inside the cross-linked BSA molecule. The as-designed paired AuNCs in BSA (or BSA-p-AuNCs for short) show improved performances in living cells.The prevalence of reactive oxygen species (ROS) production and the enzyme-containing intracellular environment could lead to the fluorescence quenching of bovine serum albumin (BSA)-capped gold nanoclusters (AuNCs). Here we report an efficient strategy to address this issue, where a polymer-like shielding layer is designed to wrap around the Au core to significantly improve the stability of AuNCs against ROS and protease degradation. The key of our design is to covalently incorporate a thiolated AuNC into the BSA-AuNC via carbodiimide-activated coupling, leading to the formation of a AuNC pair inside the cross-linked BSA molecule. The as-designed paired AuNCs in BSA (or BSA-p-AuNCs for short) show improved performances in living cells. Electronic supplementary information (ESI) available: Detailed experimental materials, apparatus, experimental procedures and characterization data. See DOI: 10.1039/c6nr02178f

  19. Aqueous oxidation reaction enabled layer-by-layer corrosion of semiconductor nanoplates into single-crystalline 2D nanocrystals with single layer accuracy and ionic surface capping.

    Science.gov (United States)

    Ji, Muwei; Xu, Meng; Zhang, Jun; Liu, Jiajia; Zhang, Jiatao

    2016-02-25

    A controllable aqueous oxidation reaction enabled layer-by-layer corrosion has been proposed to prepare high-quality two-dimensional (2D) semiconductor nanocrystals with single layer accuracy and well-retained hexagonal shapes. The appropriate oxidizing agent, such as H2O2, Fe(NO3)3, and HNO3, could not only corrode the layered-crystalline-structured Bi2Te3 nanoplates layer-by-layer to be a single quintuple layer, but also replace the organic barriers to be ionic ligands on the surface synergistically. AFM analysis was used to confirm the layer-by-layer exfoliation from the side to the center. Together with precise XRD, LRTEM and HRTEM characterizations, the controllable oxidation reaction enabled aqueous layer-by-layer corrosion mechanism has been studied.

  20. Magnetotransport properties of a few-layer graphene-ferromagnetic metal junctions in vertical spin valve devices

    Energy Technology Data Exchange (ETDEWEB)

    Entani, Shiro, E-mail: entani.shiro@jaea.go.jp; Naramoto, Hiroshi; Sakai, Seiji [Advanced Science Research Center, Japan Atomic Energy Agency, 2-4 Shirakata-Shirane, Tokai, Ibaraki 319-1195 (Japan)

    2015-05-07

    Magnetotransport properties were studied for the vertical spin valve devices with two junctions of permalloy electrodes and a few-layer graphene interlayer. The graphene layer was directly grown on the bottom electrode by chemical vapor deposition. X-ray photoelectron spectroscopy showed that the permalloy surface fully covered with a few-layer graphene is kept free from oxidation and contamination even after dispensing and removing photoresist. This enabled fabrication of the current perpendicular to plane spin valve devices with a well-defined interface between graphene and permalloy. Spin-dependent electron transport measurements revealed a distinct spin valve effect in the devices. The magnetotransport ratio was 0.8% at room temperature and increased to 1.75% at 50 K. Linear current-voltage characteristics and resistance increase with temperature indicated that ohmic contacts are realized at the relevant interfaces.

  1. Magnetic tunnel junctions using perpendicularly magnetized synthetic antiferromagnetic reference layer for wide-dynamic-range magnetic sensors

    Science.gov (United States)

    Nakano, T.; Oogane, M.; Furuichi, T.; Ando, Y.

    2017-01-01

    We developed CoFeB/MgO/CoFeB magnetic tunnel junctions (MTJs) with a perpendicularly magnetized synthetic antiferromagnetic (p-SAF) reference layer for magnetic sensor applications. The MTJs exhibited linear tunnel magnetoresistance curves to out-of-plane applied magnetic fields with dynamic ranges more than ±2.5 kOe, which are wider than those in CoFeB/MgO/CoFeB-MTJs reported to date. The performance metrics of MTJ sensors, i.e., sensitivity and nonlinearity, depend significantly on the anisotropy field of the free layer. We explained the dependences by a simple model based on the Stoner-Wohlfarth and Slonczewski models, which gives us a guideline to design the sensor performance metrics. These findings demonstrated that MTJs with a p-SAF reference layer are promising candidates for wide-dynamic-range magnetic sensors.

  2. Block copolymer alignment by shear induced during solvent vapor annealing with a crosslinked elastomer capping layer

    Science.gov (United States)

    Vogt, Bryan

    2014-03-01

    The long range alignment of block copolymers (BCPs) is generally accomplished through application of a gradient shear force or by topographical or chemical cues patterned into the substrate. These techniques require lithographic patterning, specialty substrates or custom built equipment to achieve the alignment, which limits the broad academic application of aligned BCPs. One technique to improve the large range ordering of BCPs is solvent vapor annealing (SVA), which exposes the BCP film to a controlled atmosphere of solvent vapor to swell the BCP and provide significant enhancements in the chain mobility. Here, we discuss a minor modification of the SVA process; a thin piece of crosslinked poly(dimethyl siloxane) (PDMS) is placed on top of the BCP film before SVA. Exposure to organic solvent vapors causes the PDMS to swell, while the solvent also plasticizes the BCP film. Removal of the solvent induces a shear to the BCP film as the PDMS shrinks back to its initial dimensions. The shape of the PDMS cap determines the anisotropy in the stress applied on deswelling that aligns and orients the BCP domains. Polystyrene-block-polyisoprene-block-polystyrene (SIS) is utilized as a model system to illustrate how the processing parameters impact the orientation as determined by both grazing incidence small angle x-ray scattering (GISAXS) and atomic force microscopy (AFM). Quantification of the alignment by Herman's orientational parameter (S) illustrates high degree of alignment (S =0.95) is possible through appropriate selection of processing conditions. This SVA-based alignment method provides a relatively simple method to orient BCP films within general SVA processing protocols.

  3. Zero-field spin transfer oscillators based on magnetic tunnel junction having perpendicular polarizer and planar free layer

    Science.gov (United States)

    Fang, Bin; Feng, Jiafeng; Gan, Huadong; Malmhall, Roger; Huai, Yiming; Xiong, Rongxin; Wei, Hongxiang; Han, Xiufeng; Zhang, Baoshun; Zeng, Zhongming

    2016-12-01

    We experimentally studied spin-transfer-torque induced magnetization oscillations in an asymmetric MgO-based magnetic tunnel junction device consisting of an in-plane magnetized free layer and an out-of-plane magnetized polarizer. A steady auto-oscillation was achieved at zero magnetic field and room temperature, with an oscillation frequency that was strongly dependent on bias currents, with a large frequency tunability of 1.39 GHz/mA. Our results suggest that this new structure has a high potential for new microwave device designs.

  4. Zero-field spin transfer oscillators based on magnetic tunnel junction having perpendicular polarizer and planar free layer

    Directory of Open Access Journals (Sweden)

    Bin Fang

    2016-12-01

    Full Text Available We experimentally studied spin-transfer-torque induced magnetization oscillations in an asymmetric MgO-based magnetic tunnel junction device consisting of an in-plane magnetized free layer and an out-of-plane magnetized polarizer. A steady auto-oscillation was achieved at zero magnetic field and room temperature, with an oscillation frequency that was strongly dependent on bias currents, with a large frequency tunability of 1.39 GHz/mA. Our results suggest that this new structure has a high potential for new microwave device designs.

  5. Influence of void-free perovskite capping layer on the charge recombination process in high performance CH3NH3PbI3 perovskite solar cells

    Science.gov (United States)

    Fu, Kunwu; Nelson, Christopher T.; Scott, Mary Cooper; Minor, Andrew; Mathews, Nripan; Wong, Lydia Helena

    2016-02-01

    The stunning rise of methylammonium lead iodide perovskite material as a light harvesting material in recent years has drawn much attention in the photovoltaic community. Here, we investigated in detail the uniform and void-free perovskite capping layer in the mesoscopic perovskite devices and found it to play a critical role in determining device performance and charge recombination process. Compared to the rough surface with voids of the perovskite layer, surface of the perovskite capping layer obtained from sequential deposition process is much more uniform with less void formation and distribution within the TiO2 mesoscopic scaffold is more homogeneous, leading to much improved photovoltaic parameters of the devices. The impact of void free perovskite capping layer surface on the charge recombination processes within the mesoscopic perovskite solar cells is further scrutinized via charge extraction measurement. Modulation of precursor solution concentrations in order to further improve the perovskite layer surface morphology leads to higher efficiency and lower charge recombination rates. Inhibited charge recombination in these solar cells also matches with the higher charge density and slower photovoltage decay profiles measured.The stunning rise of methylammonium lead iodide perovskite material as a light harvesting material in recent years has drawn much attention in the photovoltaic community. Here, we investigated in detail the uniform and void-free perovskite capping layer in the mesoscopic perovskite devices and found it to play a critical role in determining device performance and charge recombination process. Compared to the rough surface with voids of the perovskite layer, surface of the perovskite capping layer obtained from sequential deposition process is much more uniform with less void formation and distribution within the TiO2 mesoscopic scaffold is more homogeneous, leading to much improved photovoltaic parameters of the devices. The impact of

  6. Improved conductivity of aluminum-doped ZnO: The effect of hydrogen diffusion from a hydrogenated amorphous silicon capping layer

    NARCIS (Netherlands)

    Ponomarev, M. V.; Sharma, K.; Verheijen, M. A.; M. C. M. van de Sanden,; Creatore, M.

    2012-01-01

    Plasma-deposited aluminum-doped ZnO (ZnO:Al) demonstrated a resistivity gradient as function of the film thickness, extending up to about 600 nm. This gradient decreased sharply when the ZnO:Al was capped by a hydrogenated amorphous silicon layer (a-Si:H) and subsequently treated according to the so

  7. Stability of low-carrier-density topological-insulator Bi{sub 2}Se{sub 3} thin films and effect of capping layers

    Energy Technology Data Exchange (ETDEWEB)

    Salehi, Maryam [Department of Materials Science and Engineering, Rutgers, The State University of New Jersey, Piscataway, New Jersey 08854 (United States); Brahlek, Matthew; Koirala, Nikesh; Moon, Jisoo; Oh, Seongshik, E-mail: ohsean@physics.rutgers.edu [Department of Physics and Astronomy, Rutgers, The State University of New Jersey, Piscataway, New Jersey 08854 (United States); Wu, Liang; Armitage, N. P. [Department of Physics and Astronomy, The Institute for Quantum Matter, The Johns Hopkins University, Baltimore, Maryland 21218 (United States)

    2015-09-01

    Although over the past number of years there have been many advances in the materials aspects of topological insulators (TIs), one of the ongoing challenges with these materials is the protection of them against aging. In particular, the recent development of low-carrier-density bulk-insulating Bi{sub 2}Se{sub 3} thin films and their sensitivity to air demands reliable capping layers to stabilize their electronic properties. Here, we study the stability of the low-carrier-density Bi{sub 2}Se{sub 3} thin films in air with and without various capping layers using DC and THz probes. Without any capping layers, the carrier density increases by ∼150% over a week and by ∼280% over 9 months. In situ-deposited Se and ex situ-deposited poly(methyl methacrylate) suppress the aging effect to ∼27% and ∼88%, respectively, over 9 months. The combination of effective capping layers and low-carrier-density TI films will open up new opportunities in topological insulators.

  8. Low temperature tunneling magnetoresistance on (La,Sr)MnO3/Co junctions with organic spacer layers

    Science.gov (United States)

    Vinzelberg, H.; Schumann, J.; Elefant, D.; Gangineni, R. B.; Thomas, J.; Büchner, B.

    2008-05-01

    This paper concerns with giant magnetoresistance (MR) effects in organic spin valves, which are realized as layered (La,Sr)MnO3 (LSMO)-based junctions with tris-(8, hydroxyquinoline) aluminum (Alq3)-spacer and ferromagnetic top layers. The experimental work was focused on the understanding of the transport behavior in this type of magnetic switching elements. The device preparation was carried out in an ultrahigh vacuum chamber equipped with a mask changer by evaporation and sputtering on SrTiO3 substrates with LSMO stripes deposited by pulsed laser technique. The field and temperature dependences of the MR of the prepared elements are studied. Spin-valve effects at 4.2K have been observed in a broad resistance interval from 50Ω to MΩ range, however, without systematic dependence on spacer layer thickness and device area. In some samples, the MR changes sign as a function of the bias voltage. The observed similarity in the bias voltages dependences of the MR in comparison with conventional magnetic tunnel junctions with oxide barriers suggests a description of the found effects within the classical tunneling concept. This assumption is also confirmed by a similar switching behavior observed on ferromagnetically contacted carbon nanotube devices. The proposed model implies the realization of the transport via local Co chains embedded in the Alq3 layer and spin dependent tunneling over barriers at the interface Co grains/Alq3/LSMO. The existence of conducting Co chains within the organics is supported by transmission electron microscopic/electron energy loss spectroscopic studies on cross-sectional samples from analogous layer stacks.

  9. Iridium/Iridium Silicide as an Oxidation Resistant Capping Layer for Soft X-ray Mirrors

    Energy Technology Data Exchange (ETDEWEB)

    Prisbrey, S; Vernon, S

    2004-04-05

    Rust on a sword, tarnish on the silverware, and a loss in reflectivity for soft x-ray mirrors are all caused by oxidation that changes the desired characteristics of a material. Methods to prevent the oxidation have varied over the centuries with the default method of a protective coating being the most common. The protective coating for x-ray mirrors is usually a self-limiting oxidized layer on the surface of the material that stops further oxidation of the material by limiting the diffusion of oxygen to the material underneath.

  10. Pulsed laser deposition of YBCO coated conductor using Y{sub 2}O{sub 3} as the seed and cap layer

    Energy Technology Data Exchange (ETDEWEB)

    Barnes, P N; Nekkanti, R M; Haugan, T J; Campbell, T A; Yust, N A; Evans, J M [Propulsion Directorate, Air Force Research Laboratory, WPAFB, OH 45433 (United States)

    2004-08-01

    Although a variety of buffer layers have been routinely reported, a standard architecture commonly used for the Y Ba{sub 2}Cu{sub 3}O{sub 7-x} (YBCO) coated conductor is Y BCO/CeO{sub 2}/Y SZ/CeO{sub 2}/substrate or Y BCO/CeO{sub 2}/Y SZ/Y{sub 2}O{sub 3}/substrate where ceria is typically the cap layer. CeO{sub 2} is generally used as only a seed (or cap layer) since cracking within the film occurs in thicker CeO{sub 2} layers due to the stress of lattice mismatching. Y{sub 2}O{sub 3} has been proposed as a seed and as a cap layer but usually not for both in a given architecture, especially with all layers deposited in situ. Yttrium oxide films grown on nickel by electron beam evaporation processes were found to be dense and crack free with good epitaxy. In this report, pulsed laser deposition (PLD) of Y{sub 2}O{sub 3} is given where Y{sub 2}O{sub 3} serves as both the seed and cap layer in the YBCO architecture. A comparison to PLD CeO{sub 2} is provided. Deposited layers of the YBCO coated conductor are also grown by laser ablation. Initial deposition resulted in specimens on textured Ni substrates with current densities of more than 1 MA cm{sup -2} at 77 K, self-field.

  11. Enhancement of order degree and perpendicular magnetic anisotropy of L10 ordered Fe(Pt,Pd) alloy film by introducing a thin MgO cap-layer

    Science.gov (United States)

    Noguchi, Youhei; Ohtake, Mitsuru; Futamoto, Masaaki; Kirino, Fumiyoshi; Inaba, Nobuyuki

    2016-07-01

    Fe50PtxPd50-x (at%, x=0-50) alloy films of 10 nm thickness with and without 2-nm-thick MgO cap-layers are prepared on MgO(001) single-crystal substrates by employing a two-step method consisting of low-temperature deposition at 200 °C followed by high-temperature annealing at 600 °C. The influences of MgO cap-layer on the structure and the magnetic properties are investigated. Fe50PtxPd50-x films epitaxially grow on the substrates at 200 °C. The Fe50Pd50 and the Fe50Pt12.5Pd37.5 films are respectively composed of (001) single-crystals with disordered fcc-based (A1) and bcc-based (A2) structures. The films with x>25 consist of mixtures of A1 and A2 crystals. The volume ratio of A2 to A1 crystal decreases with increasing the x value from 25 to 50. The in-plane and out-of-plane lattices are respectively expanded and shrunk due to accommodation of lattice mismatch between film and substrate. When the films are annealed at 600 °C, phase transformation to L10 ordered phase takes place. L10 phase transformation of Fe50PtxPd50-x film is promoted for a sample with MgO cap-layer and the order degree is higher than that without cap-layer. Furthermore, L10 ordering with the c-axis perpendicular to the substrate surface is enhanced for the film with cap-layer. The cap-layer is considered to be giving a tension stress to the magnetic film in lateral direction which promotes L10 ordering with the c-axis perpendicular to the substrate. Deposition of cap-layer is shown effective in achieving higher order degree and in enhancing perpendicular magnetic anisotropy with Fe(Pt,Pd) films.

  12. Effect of Mo insertion layers on the magnetoresistance and perpendicular magnetic anisotropy in Ta/CoFeB/MgO junctions

    Science.gov (United States)

    Almasi, H.; Xu, M.; Xu, Y.; Newhouse-Illige, T.; Wang, W. G.

    2016-07-01

    The effect of a thin Mo dusting layer inserted at the interface of Ta/CoFeB of perpendicular magnetic tunneling junction with MgO barriers was investigated. Unlike thick Mo layers that exhibited a strong (110) crystalline texture, the inserted Mo layer between Ta/CoFeB had little negative influence on the crystallization of CoFe (001), therefore combining the advantages of Mo as a good thermal barrier and Ta as a good boron sink. For optimized Mo dusting thickness, a large tunneling magnetoresistance of 208% was achieved in perpendicular magnetic tunneling junctions with superior thermal stability at 500 °C.

  13. Cervical Cap

    Science.gov (United States)

    ... I Help Someone Who's Being Bullied? Volunteering Cervical Cap KidsHealth > For Teens > Cervical Cap Print A A ... and a female's egg. How Does a Cervical Cap Work? The cervical cap keeps sperm from entering ...

  14. Clouds, Aerosol, and Precipitation in the Marine Boundary Layer (CAP-MBL) Final Campaign Report

    Energy Technology Data Exchange (ETDEWEB)

    Wood, R. [Univ. of Washington, Seattle, WA (United States)

    2016-01-01

    The extensive coverage of low clouds over the subtropical eastern oceans greatly impacts the current climate. In addition, the response of low clouds to changes in atmospheric greenhouse gases and aerosols is a major source of uncertainty, which thwarts accurate prediction of future climate change. Low clouds are poorly simulated in climate models, partly due to inadequate long-term simultaneous observations of their macrophysical and microphysical structure, radiative effects, and associated aerosol distribution in regions where their impact is greatest. The thickness and extent of subtropical low clouds is dependent on tight couplings between surface fluxes of heat and moisture, radiative cooling, boundary layer turbulence, and precipitation (much of which evaporates before reaching the ocean surface and is closely connected to the abundance of cloud condensation nuclei). These couplings have been documented as a result of past field programs and model studies. However, extensive research is still required to achieve a quantitative understanding sufficient for developing parameterizations, which adequately predict aerosol indirect effects and low cloud response to climate perturbations. This is especially true of the interactions between clouds, aerosol, and precipitation. These processes take place in an ever-changing synoptic environment that can confound interpretation of short time period observations.

  15. Influence of void-free perovskite capping layer on the charge recombination process in high performance CH3NH3PbI3 perovskite solar cells.

    Science.gov (United States)

    Fu, Kunwu; Nelson, Christopher T; Scott, Mary Cooper; Minor, Andrew; Mathews, Nripan; Wong, Lydia Helena

    2016-02-21

    The stunning rise of methylammonium lead iodide perovskite material as a light harvesting material in recent years has drawn much attention in the photovoltaic community. Here, we investigated in detail the uniform and void-free perovskite capping layer in the mesoscopic perovskite devices and found it to play a critical role in determining device performance and charge recombination process. Compared to the rough surface with voids of the perovskite layer, surface of the perovskite capping layer obtained from sequential deposition process is much more uniform with less void formation and distribution within the TiO2 mesoscopic scaffold is more homogeneous, leading to much improved photovoltaic parameters of the devices. The impact of void free perovskite capping layer surface on the charge recombination processes within the mesoscopic perovskite solar cells is further scrutinized via charge extraction measurement. Modulation of precursor solution concentrations in order to further improve the perovskite layer surface morphology leads to higher efficiency and lower charge recombination rates. Inhibited charge recombination in these solar cells also matches with the higher charge density and slower photovoltage decay profiles measured.

  16. Optimization of Recombination Layer in the Tunnel Junction of Amorphous Silicon Thin-Film Tandem Solar Cells

    Directory of Open Access Journals (Sweden)

    Yang-Shin Lin

    2011-01-01

    Full Text Available The amorphous silicon/amorphous silicon (a-Si/a-Si tandem solar cells have attracted much attention in recent years, due to the high efficiency and low manufacturing cost compared to the single-junction a-Si solar cells. In this paper, the tandem cells are fabricated by high-frequency plasma-enhanced chemical vapor deposition (HF-PECVD at 27.1 MHz. The effects of the recombination layer and the i-layer thickness matching on the cell performance have been investigated. The results show that the tandem cell with a p+ recombination layer and i2/i1 thickness ratio of 6 exhibits a maximum efficiency of 9.0% with the open-circuit voltage (Voc of 1.59 V, short-circuit current density (Jsc of 7.96 mA/cm2, and a fill factor (FF of 0.70. After light-soaking test, our a-Si/a-Si tandem cell with p+ recombination layer shows the excellent stability and the stabilized efficiency of 8.7%.

  17. Ultra-thin GaAs single-junction solar cells integrated with a reflective back scattering layer

    Science.gov (United States)

    Yang, Weiquan; Becker, Jacob; Liu, Shi; Kuo, Ying-Shen; Li, Jing-Jing; Landini, Barbara; Campman, Ken; Zhang, Yong-Hang

    2014-05-01

    This paper reports the proposal, design, and demonstration of ultra-thin GaAs single-junction solar cells integrated with a reflective back scattering layer to optimize light management and minimize non-radiative recombination. According to our recently developed semi-analytical model, this design offers one of the highest potential achievable efficiencies for GaAs solar cells possessing typical non-radiative recombination rates found among commercially available III-V arsenide and phosphide materials. The structure of the demonstrated solar cells consists of an In0.49Ga0.51P/GaAs/In0.49Ga0.51P double-heterostructure PN junction with an ultra-thin 300 nm thick GaAs absorber, combined with a 5 μm thick Al0.52In0.48P layer with a textured as-grown surface coated with Au used as a reflective back scattering layer. The final devices were fabricated using a substrate-removal and flip-chip bonding process. Solar cells with a top metal contact coverage of 9.7%, and a MgF2/ZnS anti-reflective coating demonstrated open-circuit voltages (Voc) up to 1.00 V, short-circuit current densities (Jsc) up to 24.5 mA/cm2, and power conversion efficiencies up to 19.1%; demonstrating the feasibility of this design approach. If a commonly used 2% metal grid coverage is assumed, the anticipated Jsc and conversion efficiency of these devices are expected to reach 26.6 mA/cm2 and 20.7%, respectively.

  18. Two-Dimensional Atomic-Layered Alloy Junctions for High-Performance Wearable Chemical Sensor.

    Science.gov (United States)

    Cho, Byungjin; Kim, Ah Ra; Kim, Dong Jae; Chung, Hee-Suk; Choi, Sun Young; Kwon, Jung-Dae; Park, Sang Won; Kim, Yonghun; Lee, Byoung Hun; Lee, Kyu Hwan; Kim, Dong-Ho; Nam, Jaewook; Hahm, Myung Gwan

    2016-08-03

    We first report that two-dimensional (2D) metal (NbSe2)-semiconductor (WSe2)-based flexible, wearable, and launderable gas sensors can be prepared through simple one-step chemical vapor deposition of prepatterned WO3 and Nb2O5. Compared to a control device with a Au/WSe2 junction, gas-sensing performance of the 2D NbSe2/WSe2 device was significantly enhanced, which might have resulted from the formation of a NbxW1-xSe2 transition alloy junction lowering the Schottky barrier height. This would make it easier to collect charges of channels induced by molecule adsorption, improving gas response characteristics toward chemical species including NO2 and NH3. 2D NbSe2/WSe2 devices on a flexible substrate provide gas-sensing properties with excellent durability under harsh bending. Furthermore, the device stitched on a T-shirt still performed well even after conventional cleaning with a laundry machine, enabling wearable and launderable chemical sensors. These results could pave a road toward futuristic gas-sensing platforms based on only 2D materials.

  19. The role of hydrogenated amorphous silicon oxide buffer layer on improving the performance of hydrogenated amorphous silicon germanium single-junction solar cells

    Science.gov (United States)

    Sritharathikhun, Jaran; Inthisang, Sorapong; Krajangsang, Taweewat; Krudtad, Patipan; Jaroensathainchok, Suttinan; Hongsingtong, Aswin; Limmanee, Amornrat; Sriprapha, Kobsak

    2016-12-01

    Hydrogenated amorphous silicon oxide (a-Si1-xOx:H) film was used as a buffer layer at the p-layer (μc-Si1-xOx:H)/i-layer (a-Si1-xGex:H) interface for a narrow band gap hydrogenated amorphous silicon germanium (a-Si1-xGex:H) single-junction solar cell. The a-Si1-xOx:H film was deposited by plasma enhanced chemical vapor deposition (PECVD) at 40 MHz in a same processing chamber as depositing the p-type layer. An optimization of the thickness of the a-Si1-xOx:H buffer layer and the CO2/SiH4 ratio was performed in the fabrication of the a-Si1-xGex:H single junction solar cells. By using the wide band gap a-Si1-xOx:H buffer layer with optimum thickness and CO2/SiH4 ratio, the solar cells showed an improvement in the open-circuit voltage (Voc), fill factor (FF), and short circuit current density (Jsc), compared with the solar cells fabricated using the conventional a-Si:H buffer layer. The experimental results indicated the excellent potential of the wide-gap a-Si1-xOx:H buffer layers for narrow band gap a-Si1-xGex:H single junction solar cells.

  20. Tuning the thickness of electrochemically grafted layers in large area molecular junctions

    Energy Technology Data Exchange (ETDEWEB)

    Fluteau, T.; Bessis, C.; Barraud, C., E-mail: clement.barraud@univ-paris-diderot.fr; Della Rocca, M. L.; Lafarge, P. [Université Paris Diderot, Sorbonne Paris Cité, MPQ, UMR 7162, CNRS, 75205 Paris Cedex 13 (France); Martin, P.; Lacroix, J.-C. [Université Paris Diderot, Sorbonne Paris Cité, ITODYS, UMR 7086, CNRS, 15 rue J.-A. de Baïf, 75205 Paris Cedex 13 (France)

    2014-09-21

    We have investigated the thickness, the surface roughness, and the transport properties of oligo(1-(2-bisthienyl)benzene) (BTB) thin films grafted on evaporated Au electrodes, thanks to a diazonium-based electro-reduction process. The thickness of the organic film is tuned by varying the number of electrochemical cycles during the growth process. Atomic force microscopy measurements reveal the evolution of the thickness in the range of 2–27 nm. Its variation displays a linear dependence with the number of cycles followed by a saturation attributed to the insulating behavior of the organic films. Both ultrathin (2 nm) and thin (12 and 27 nm) large area BTB-based junctions have then been fabricated using standard CMOS processes and finally electrically characterized. The electronic responses are fully consistent with a tunneling barrier in case of ultrathin BTB film whereas a pronounced rectifying behavior is reported for thicker molecular films.

  1. DESORPTION OF Te CAPPING LAYER FROM ZnTe (100: AUGER SPECTROSCOPY, LOW-ENERGY ELECTRON DIFFRACTION AND SCANNING TUNNELING MICROSCOPY

    Directory of Open Access Journals (Sweden)

    K. K. Sossoe

    2016-01-01

    Full Text Available The influence of the annealing temperature to desorb a protective Te capping layer of the zinc telluride (ZnTe (100 surface was investigated. The surface reconstruction of the ZnTe (100 upon the removal of a Te capping layer grown by the molecular beam epitaxy was characterized by different methods. Auger spectroscopy brought out the chemical composition of the surface before and after annealing; the Low-energy electron diffraction (LEED gave information about the crystallographic structure. The surface crystallographic configurations of tellurium Te (c (2x2 and Te (c (2x1 are confirmed by scanning tunneling microscopy (STM. Such a study reveals a phase transition from a rich-Te to a poor-Te surface as the annealing temperature increases. 

  2. Simulation study of 14-nm-gate III-V trigate field effect transistor devices with In1-xGaxAs channel capping layer

    Science.gov (United States)

    Huang, Cheng-Hao; Li, Yiming

    2015-06-01

    In this work, we study characteristics of 14-nm-gate InGaAs-based trigate MOSFET (metal-oxide-semiconductor field effect transistor) devices with a channel capping layer. The impacts of thickness and gallium (Ga) concentration of the channel capping layer on the device characteristic are firstly simulated and optimized by using three-dimensional quantum-mechanically corrected device simulation. Devices with In1-xGaxAs/In0.53Ga0.47As channels have the large driving current owing to small energy band gap and low alloy scattering at the channel surface. By simultaneously considering various physical and switching properties, a 4-nm-thick In0.68Ga0.32As channel capping layer can be adopted for advanced applications. Under the optimized channel parameters, we further examine the effects of channel fin angle and the work-function fluctuation (WKF) resulting from nano-sized metal grains of NiSi gate on the characteristic degradation and variability. To maintain the device characteristics and achieve the minimal variation induced by WKF, the physical findings of this study indicate a critical channel fin angle of 85o is needed for the device with an averaged grain size of NiSi below 4x4 nm2.

  3. Simulation study of 14-nm-gate III-V trigate field effect transistor devices with In1−xGaxAs channel capping layer

    Directory of Open Access Journals (Sweden)

    Cheng-Hao Huang

    2015-06-01

    Full Text Available In this work, we study characteristics of 14-nm-gate InGaAs-based trigate MOSFET (metal-oxide-semiconductor field effect transistor devices with a channel capping layer. The impacts of thickness and gallium (Ga concentration of the channel capping layer on the device characteristic are firstly simulated and optimized by using three-dimensional quantum-mechanically corrected device simulation. Devices with In1−xGaxAs/In0.53Ga0.47As channels have the large driving current owing to small energy band gap and low alloy scattering at the channel surface. By simultaneously considering various physical and switching properties, a 4-nm-thick In0.68Ga0.32As channel capping layer can be adopted for advanced applications. Under the optimized channel parameters, we further examine the effects of channel fin angle and the work-function fluctuation (WKF resulting from nano-sized metal grains of NiSi gate on the characteristic degradation and variability. To maintain the device characteristics and achieve the minimal variation induced by WKF, the physical findings of this study indicate a critical channel fin angle of 85o is needed for the device with an averaged grain size of NiSi below 4x4 nm2.

  4. Dynamic changes of connexin-43, gap junctional protein, in outer layers of cumulus cells are regulated by PKC and PI 3-kinase during meiotic resumption in porcine oocytes.

    Science.gov (United States)

    Shimada, M; Maeda, T; Terada, T

    2001-04-01

    Mammalian oocytes are surrounded by numerous layers of cumulus cells, and the loss of gap junctional communication in the outer layers of cumulus cells induces meiotic resumption in oocytes. In this study, we investigated the dynamic changes in the gap junctional protein connexin-43 in cumulus cells during the meiotic resumption of porcine oocytes. The amount of connexin-43 in all layers of cumulus cells recovered from cumulus-oocyte complexes was increased after 4-h cultivation. However, at 12-h cultivation, the positive signal for connexin-43 immunoreactivity was markedly reduced in the outer layers of cumulus cells. When these reductions of connexin-43 were blocked by protein kinase C (PKC) or phosphatidylinositol (PI) 3-kinase inhibitor, networks of filamentous bivalents (i.e., advanced chromosomal status) were undetectable in the germinal vesicle of the oocyte. After 28-h cultivation, when the majority of oocytes were reaching the metaphase I (MI) stage, the connexin-43 in the inner layers of cumulus cells was phosphorylated, regardless of mitogen-activated protein (MAP) kinase activation. These results suggest that the initiation of meiotic resumption, namely, the formation of networks of filamentous bivalents in germinal vesicle, is associated with the reduction of gap junctional protein connexin-43 in the outer layers of cumulus cells via the PKC and/or PI 3-kinase pathway. Moreover, the connexin-43 in the inner layers of cumulus cells is phosphorylated during meiotic progression beyond the MI stage, regardless of MAP kinase activation in cumulus cells surrounding the oocyte.

  5. New trilayer resist process using a phenol-capped siloxane-based middle-layer for ArF resist process

    Science.gov (United States)

    Otoguro, Akihiko; Takechi, Satoshi; Deguchi, Takatoshi; Hanyu, Isamu

    2003-06-01

    We have developed a new tri-layer resist process to meet requirements related to etching durability and aspect ratio of ArF process. The new phenol capped siloxane-based middle-layer does not change thickness and does not increase particles even after six months. Additionally no footing pattern formation occurs. Our middle-layer has a function as anti-reflect and simulated reflectivity in a top ArF resist layer is less than 1.0% at the tri-layer structure by controlling middle-layer and under-layer thickness. The critical dimension (CD) uniformity of 140 nm contact hole pattern is less than 6 nm (3 sigma) intra wafer. This new middle layer gives high etching sensitivity relative to under-layer and we can demonstrate pattern transfer using a contact hole pattern. We have applied this system to a dual damascene process and successfully completed a 280-nm pitch multilevel copper interconnection. We conclude that our new tri-layer resist process is suitable for use in mass production of 90-nm node LSI and below.

  6. Experimental demonstration of single electron transistors featuring SiO{sub 2} plasma-enhanced atomic layer deposition in Ni-SiO{sub 2}-Ni tunnel junctions

    Energy Technology Data Exchange (ETDEWEB)

    Karbasian, Golnaz, E-mail: Golnaz.Karbasian.1@nd.edu; McConnell, Michael S.; Orlov, Alexei O.; Rouvimov, Sergei; Snider, Gregory L. [Electrical Engineering Department, University of Notre Dame, Indiana 46556 (United States)

    2016-01-15

    The authors report the use of plasma-enhanced atomic layer deposition (PEALD) to fabricate single-electron transistors (SETs) featuring ultrathin (≈1 nm) tunnel-transparent SiO{sub 2} in Ni-SiO{sub 2}-Ni tunnel junctions. They show that, as a result of the O{sub 2} plasma steps in PEALD of SiO{sub 2}, the top surface of the underlying Ni electrode is oxidized. Additionally, the bottom surface of the upper Ni layer is also oxidized where it is in contact with the deposited SiO{sub 2}, most likely as a result of oxygen-containing species on the surface of the SiO{sub 2}. Due to the presence of these surface parasitic layers of NiO, which exhibit features typical of thermally activated transport, the resistance of Ni-SiO{sub 2}-Ni tunnel junctions is drastically increased. Moreover, the transport mechanism is changed from quantum tunneling through the dielectric barrier to one consistent with thermally activated resistors in series with tunnel junctions. The reduction of NiO to Ni is therefore required to restore the metal-insulator-metal (MIM) structure of the junctions. Rapid thermal annealing in a forming gas ambient at elevated temperatures is presented as a technique to reduce both parasitic oxide layers. This method is of great interest for devices that rely on MIM tunnel junctions with ultrathin barriers. Using this technique, the authors successfully fabricated MIM SETs with minimal trace of parasitic NiO component. They demonstrate that the properties of the tunnel barrier in nanoscale tunnel junctions (with <10{sup −15} m{sup 2} in area) can be evaluated by electrical characterization of SETs.

  7. Microtubule's conformational cap

    DEFF Research Database (Denmark)

    Chretien, D.; Janosi, I.; Taveau, J.C.

    1999-01-01

    The molecular mechanisms that allow elongation of the unstable microtubule lattice remain unclear. It is usually thought that the GDP-liganded tubulin lattice is capped by a small layer of GTP- or GDP-P(i)-liganded molecules, the so called "GTP-cap". Here, we point-out that the elastic properties...

  8. Effect of Organic Capping Layers over Monodisperse Platinum Nanoparticles upon Activity for Ethylene Hydrogenation and Carbon Monoxide Oxidation

    Energy Technology Data Exchange (ETDEWEB)

    Kuhn, John N.; Tsung, Chia-Kuang; Huang, Wenyu; Somorjai, Gabor A.

    2009-03-24

    The influence of oleylamine (OA), trimethyl tetradecyl ammonium bromide (TTAB), and polyvinlypyrrolidone (PVP) capping agents upon the catalytic properties of Pt/silica catalysts was evaluated. Pt nanoparticles that were 1.5 nm in size were synthesized by the same procedure (ethylene glycol reduction under basic conditions) with the various capping agents added afterward for stabilization. Before examining catalytic properties for ethylene hydrogenation and CO oxidation, the Pt NPs were deposited onto mesoporous silica (SBA-15) supports and characterized by transmission electron microscopy (TEM), H{sub 2} chemisorption, and elemental analysis (ICP-MS). PVP- and TTAB-capped Pt yielded mass-normalized reaction rates that decreased with increasing pretreatment temperature, and this trend was attributed to the partial coverage of the Pt surface with decomposition products from the organic capping agent. Once normalized to the Pt surface area, similar intrinsic activities were obtained regardless of the pretreatment temperature, which indicated no influence on the nature of the active sites. Consequently, a chemical probe technique using intrinsic activity for ethylene hydrogenation was demonstrated as an acceptable method for estimating the metallic surface areas of Pt. Amine (OA) capping exhibited a detrimental influence on the catalytic properties as severe deactivation and low activity were observed for ethylene hydrogenation and CO oxidation, respectively. These results were consistent with amine groups being strong poisons for Pt surfaces, and revealed the need to consider the effects of capping agents on the catalytic properties.

  9. CVD Delta-Doped Boron Surface Layers for Ultra-Shallow Junction Formation

    NARCIS (Netherlands)

    Sarubbi, F.; Nanver, L.K.; Scholtes, T.L.M.

    2006-01-01

    A new doping technique is presented that uses a pure boron atmospheric/low-pressure chemical vapor deposition (AP/LPCVD) in a commercially available epitaxial reactor to form less than 2-nm-thick δ-doped boron-silicide (BxSi) layers on the silicon surface. For long exposure B segregates at the surfa

  10. One order enhancement of detectivity in quaternary capped InAs/GaAs quantum dot infrared photodetectors due to vertical coupling of quantum dot layers

    Energy Technology Data Exchange (ETDEWEB)

    Ghadi, Hemant; Agarwal, Akshay; Adhikary, Sourav; Agawane, Jay; Mandal, Arjun [Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai 400076 (India); Chakrabarti, Subhananda, E-mail: subho@ee.iitb.ac.in [Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai 400076 (India); Pendyala, Naresh Babu; Prajapati, Sachin [Sensor Development Area, Space Applications Centre, ISRO, Ahmedabad 380015 (India)

    2014-09-01

    The spectral and electrical properties of vertically coupled quaternary (InAlGaAs) capped InAs/GaAs quantum dot infrared photodetector with different capping thicknesses are investigated, and compared with a conventional quaternary capped uncoupled detector. Electronic coupling between quantum dot layers leads to a reduction in the ground state energy level and hence greater electronic confinement, which reduces the dark current and enhances the detectivity. These expectations are confirmed by our experimental results. Most significantly one order enhancement in peak detectivity (from 1.1 × 10{sup 9} cm Hz{sup 1/2}/W to 2.48 × 10{sup 10} cm Hz{sup 1/2}/W) is observed for optimized coupled quantum dot infrared photodetector compared to uncoupled device. The optimal interlayer barrier thickness which gives maximum detectivity is explained in terms of the interplay between electronic coupling and strain buildup in the heterostructure. - Highlights: • Coupled quaternary capped InAs/GaAs quantum dot detector was compared with uncoupled detector. • Photoluminescence spectra of coupled device exhibit multimodal peaks. • Peak detectivity value of coupled device is 2.48 × 10{sup 10} Jones. • Peak detectivity value of uncoupled device is 1.1 × 10{sup 9} Jones. • Enhanced detectivity observed for coupled detector compared with uncoupled device.

  11. Investigating Quantum Oscillations in the Thermal Coefficient of Resistivity of Ultra-thin Ag Capping Layers on Cu for IC Interconnect Applications

    Science.gov (United States)

    Tatem, Elroy

    As the semiconductor industry continues to scale feature sizes, scattering from phonons, surfaces, and grain boundaries result in an increase of metal interconnect resistivity in state-of-the-art integrated circuits (ICs). The interconnect chapter of the 2011 International Technology Roadmap for Semiconductors (ITRS) stated that there are currently no manufacturable solutions in the near term for suitable Cu replacements. Previous studies of thin Ag films deposited on Cu demonstrated oscillations in the electron-phonon interactions within the bilayer system. This thesis investigates oscillations in the resistive properties of the Ag/Cu bilayer system and discusses the applicability of these oscillations to the resistivity challenges facing metal-based IC interconnects. Ag/Cu bilayer films were prepared by physical vapor deposition (PVD). The films were characterized by measuring the electrical resistance of the films at various temperatures and calculating the thermal coefficient of resistance (TCR) for various Ag capping layer thicknesses. Films were further characterized by atomic force microscopy (AFM), Rutherford backscattering (RBS), and scanning electron microscopy (SEM). Patterned Ag-capped Cu lines were fabricated, which exhibited resistive behavior similar to that of the Ag/Cu films. Compared to bare Cu, the resistances of Ag-capped Cu lines and films were lower and exhibited a reduced dependence on temperature. Smaller thermal coefficients of resistivity were also observed for Ag-capped Cu films and patterned lines when compared to Cu alone.

  12. Broadband and omnidirectional anti-reflection layer for III/V multi-junction solar cells

    CERN Document Server

    Diedenhofen, Silke L; Haverkamp, Erik; Bauhuis, Gerard; Schermer, John; Rivas, Jaime Gómez; 10.1016/j.solmat.2012.02.022

    2012-01-01

    We report a novel graded refractive index antireflection coating for III/V quadruple solar cells based on bottom-up grown tapered GaP nanowires. We have calculated the photocurrent density of an InGaP-GaAs-InGaAsP-InGaAs solar cell with a MgF2/ZnS double layer antireflection coating and with a graded refractive index coating. The photocurrent density can be increased by 5.9 % when the solar cell is coated with a graded refractive index layer with a thickness of 1\\mu m. We propose to realize such a graded refractive index layer by growing tapered GaP nanowires on III/V solar cells. For a first demonstration of the feasibility of the growth of tapered nanowires on III/V solar cells, we have grown tapered GaP nanowires on AlInP/GaAs substrates. We show experimentally that the reflection from the nanowire coated substrate is reduced and that the transmission into the substrate is increased for a broad spectral and angular range.

  13. The use of airborne radar reflectometry to establish snow/firn density distribution on Devon Ice Cap, Canadian Arctic: A path to understanding complex heterogeneous internal layering patterns

    Science.gov (United States)

    Rutishauser, A.; Grima, C.; Sharp, M. J.; Blankenship, D. D.; Young, D. A.; Dowdeswell, J. A.

    2014-12-01

    The internal layer stratigraphy of polar ice sheets revealed by airborne radio-echo sounding (RES) contains valuable information about past ice sheet mass balance and dynamics. Internal layers in the Antarctic and Greenland ice sheets are considered to be isochrones and are continuous over several hundreds of kilometres. In contrast, internal layers in Canadian Arctic ice caps appear to be very heterogeneous and fragmentary, consisting of highly discontinuous layers that can be traced over only a few to several tens of kilometres. Internal layers most likely relate to former ice surfaces (the upper few meters of snow/firn), the properties which are directly influenced by atmospheric conditions including the air temperature, precipitation rate, and prevailing wind pattern. We hypothesize that the heterogeneous and complex nature of layers in the Canadian Arctic results from highly variable snow and firn conditions at the surface. Characterizing surface properties such as variations in the snow/firn density from dry to wet snow/firn, as well as high-density shallow ice layers and lenses of refrozen water can help to elucidate the complex internal layer pattern in the Canadian Arctic ice caps. Estimates of the snow/firn surface density and roughness can be derived from reflectance and scattering information using the surface radar returns from RES measurements. Here we present estimates of the surface snow/firn density distribution over Devon Ice Cap in the Canadian Arctic derived by the Radar Statistical Reconnaissance (RSR) methodology (Grima et al., 2014, Planetary & Space Sciences) using data collected by recent airborne radar sounding programs. The RSR generates estimates of the statistical distribution of surface echo amplitudes over defined areas along a survey transect. The derived distributions are best-fitted with a theoretical stochastic envelope, parameterized with the signal reflectance and scattering, in order to separate those two components. Finally

  14. Thick layers of PPy and PTh: electrosynthesis and modification of electrical parameters by ion implantation p-n junctions

    Energy Technology Data Exchange (ETDEWEB)

    Lucas, B. (LEPOFI, Fac. des Sciences, 87 - Limoges (France)); Ratier, B. (LEPOFI, Fac. des Sciences, 87 - Limoges (France)); Moliton, A. (LEPOFI, Fac. des Sciences, 87 - Limoges (France)); Moliton, J.P. (LEPOFI, Fac. des Sciences, 87 - Limoges (France)); Otero, T.F. (U.P.V., Fac. de Quimica, Lab. de Electroquimica, San Sebastian (Spain)); Santamaria, C. (U.P.V., Fac. de Quimica, Lab. de Electroquimica, San Sebastian (Spain)); Angulo, E. (U.P.V., Fac. de Quimica, Lab. de Electroquimica, San Sebastian (Spain)); Rodriguez, J. (U.P.V., Fac. de Quimica, Lab. de Electroquimica, San Sebastian (Spain))

    1993-03-22

    Thick layers of polypyrrole and polythiophene (d > 10 [mu]m) were electrogenerated by square or trapezoidal waves of potential. These polymers were electrogenerated on stainless steel, electrochemically reduced, and later translated on a non metal. In the last state the electric characterization is possible without any influence of the conducting electrode. The electrogenerated films have a conductivity of p type, even after a deep electrochemical reduction and were employed to obtain a negative doping by implantation of alkali ions. Measurements of alternating conductivity ([sigma][proportional to]) showed that n doping is efficient. The conductivity [sigma][proportional to] increases with fluence (number of ions deposited on the unit surface). This increase is more efficient when a lower energy of implantation was used, as in the case of other electroactive polymers. From electroreduced polythiophene having a conductivity of 10[sup -6] S.cm[sup -1] and a > 600 [mu]V.K[sup -1] thermoelectric power, a change of sign is obtained for the thermoelectric power after implantation with Cs[sup +] or Na[sup +] ions. A stable p-n junction was constructed and controlled. (orig.)

  15. Effects of high energy proton implantation on the optical and electrical properties of In(Ga)as/GaAs QD heterostructures with variations in the capping layer

    Energy Technology Data Exchange (ETDEWEB)

    Upadhyay, S. [Centre for Research in Nanotechnology and Science, Indian Institute of Technology Bombay, Mumbai 400076, Maharashtra (India); Mandal, A.; Ghadi, H.; Pal, D. [Centre of Excellence in Nanoelectronics, Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai 400076, Maharashtra (India); Basu, A.; Agarwal, A.; Subrahmanyam, N.B.V.; Singh, P. [Ion Accelerator Development Division, Bhabha Atomic Research Centre, Mumbai 400085, Maharashtra (India); Chakrabarti, S., E-mail: subhanandachakrabarti@gmail.com [Centre of Excellence in Nanoelectronics, Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai 400076, Maharashtra (India)

    2015-05-15

    This study reports enhancements in photoluminescence (PL) efficiency resulting from implanting InAs/GaAs quantum dots with high energy protons without any post-annealing treatment and discusses the effects that result from varying the capping layer over dots. The PL efficiency for proton-implanted samples increased when the fluence of the 3 MeV protons improved from 8.0×10{sup 11} to 1.0×10{sup 13} ions/cm{sup 2}. Up to a certain point, variations in the proton energy level improved the PL efficiency. The improvements in PL efficiency resulted from annihilation of defects and non-radiative recombination centers from the dots and capping layer. Increments in the thermal activation energy of the implanted samples confirmed the finding. To determine the validity of the improvement on the optical properties of the dots, we implanted an InGaAs/GaAs quantum dot infrared photodetector (QDIP) heterostructure with 3 MeV protons. The implanted QDIP exhibited suppressed dark current density and enhanced peak detectivity by two orders compared to the as-grown devices. - Highlights: • Single layer InAs/GaAs QDs. • QDs are grown with solid source MBE. • Defects are annihilated when dots are implanted with H{sup +} ions. • Enhancement in photoluminescence emission.

  16. Layer specific changes of astroglial gap junctions in the rat cerebellar cortex by persistent Borna Disease Virus infection.

    Science.gov (United States)

    Köster-Patzlaff, Christiane; Hosseini, Seyed Mehdi; Reuss, Bernhard

    2008-07-11

    Neonatal Borna Disease Virus (BDV) infection of the Lewis rat brain, leads to Purkinje cell degeneration, in association with astroglial activation. Since astroglial gap junctions (GJ) are known to influence neuronal degeneration, we investigated BDV dependent changes in astroglial GJ connexins (Cx) Cx43, and Cx30 in the Lewis rat cerebellum, 4, and 8 weeks after neonatal infection. On the mRNA level, RT-PCR demonstrated a BDV dependent increase in cerebellar Cx43, and a decrease in Cx30, 8, but not 4 weeks p.i. On the protein level, Western blot analysis revealed no overall upregulation of Cx43, but an increase of its phosphorylated forms, 8 weeks p.i. Cx30 protein was downregulated. Immunohistochemistry revealed a BDV dependent reduction of Cx43 in the granular layer (GL), 4 weeks p.i. 8 weeks p.i., Cx43 immunoreactivity recovered in the GL, and was induced in the molecular layer (ML). Cx30 revealed a BDV dependent decrease in the GL, both 4, and 8 weeks p.i. Changes in astroglial Cxs correlated not with expression of the astrogliotic marker GFAP, which was upregulated in radial glia. With regard to functional coupling, primary cerebellar astroglial cultures, revealed a BDV dependent increase of Cx43, and Cx30 immunoreactivity and in spreading of the GJ permeant dye Lucifer Yellow. These results demonstrate a massive, BDV dependent reorganization of astroglial Cx expression, and of functional GJ coupling in the cerebellar cortex, which might be of importance for the BDV dependent neurodegeneration in this brain region.

  17. Synthesis and characterization of water-dispersed CdSe/CdS core-shell quantum dots prepared via layer-by-layer method capped with carboxylic-functionalized poly(vinyl alcohol)

    OpenAIRE

    Ramanery,Fábio Pereira; Mansur,Alexandra Ancelmo Piscitelli; Mansur,Herman Sander

    2014-01-01

    The main goal of this work was to synthesize CdSe/CdS (core-shell) nanoparticles stabilized by polymer ligand using entirely aqueous colloidal chemistry at room temperature. First, the CdSe core was prepared using precursors and acid-functionalized poly(vinyl alcohol) as the capping ligand. Next, a CdS shell was grown onto the CdSe core via the layer-by-layer technique. The CdS shell was formed by two consecutive monolayers, as estimated by empirical mathematical functions. The nucleation and...

  18. Examination of flatband and threshold voltage tuning of HfO2/TiN field effect transistors by dielectric cap layers

    Science.gov (United States)

    Guha, S.; Paruchuri, V. K.; Copel, M.; Narayanan, V.; Wang, Y. Y.; Batson, P. E.; Bojarczuk, N. A.; Linder, B.; Doris, B.

    2007-02-01

    The authors have examined the role of sub nanometer La2O3 and LaN cap layers interposed in Si /HfO2/TiN high-k gate dielectric stacks in tuning the flatband and threshold voltages of capacitors and transistors. High performance, band edge n metal oxide field effect transistors with channel lengths down to 60nm may be fabricated without significant compromise in mobility, electrical thickness, and threshold voltage. They have carried out a microstructural evaluation of these stacks and correlated these results with the electrical behavior of the devices.

  19. Method of making dense, conformal, ultra-thin cap layers for nanoporous low-k ILD by plasma assisted atomic layer deposition

    Science.gov (United States)

    Jiang, Ying-Bing; Cecchi, Joseph L.; Brinker, C. Jeffrey

    2011-05-24

    Barrier layers and methods for forming barrier layers on a porous layer are provided. The methods can include chemically adsorbing a plurality of first molecules on a surface of the porous layer in a chamber and forming a first layer of the first molecules on the surface of the porous layer. A plasma can then be used to react a plurality of second molecules with the first layer of first molecules to form a first layer of a barrier layer. The barrier layers can seal the pores of the porous material, function as a diffusion barrier, be conformal, and/or have a negligible impact on the overall ILD k value of the porous material.

  20. Observation of strain relaxation in Si{sub 1-x}Ge{sub x} layers by optical and electrical characterisation of a Schottky junction

    Energy Technology Data Exchange (ETDEWEB)

    Turan, R.; Aslan, B. [Middle East Technical Univ., Ankara (Turkey). Dept. of Physics; Nur, O.; Yousif, M.Y.A.; Willander, M. [Chalmers Univ. of Technology, Goeteborg (Sweden). Dept. of Physics

    2001-05-01

    We have studied the effect of the strain relaxation on the band-edge alignments in a Pt/p-Si{sub 1-x}Ge{sub x} Schottky junction with x=0.14 by internal photoemission spectroscopy and current-voltage measurements. We have shown that the variations in the band-edge alignments can be observed directly by measuring the optical and electrical properties of a simple Schottky junction. The strain in the Si{sub 1-x}Ge{sub x} layer has been partially relaxed by thermal treatments at two different temperatures. The degree of relaxation and other structural changes have been determined by a high-resolution X-ray diffractometer. Both optical and electrical techniques have shown that the barrier height of the Pt/Si{sub 0.86}Ge{sub 0.14} junction increases with the amount of relaxation in the Si{sub 1-x}Ge{sub x} layer. This shows that the valence-band edge of the Si{sub 1-x}Ge{sub x} layer moves away from the Fermi level of the Pt/Si{sub 1-x}Ge{sub x} junction. The band-edge movement results from the increase in the band gap of the Si{sub 1-x}Ge{sub x} layer after the strain relaxation. This result agrees with the theoretical predictions for the strain-induced effects on the Si{sub 1-x}Ge{sub x} band structure. (orig.)

  1. An approach to characterize ultra-thin conducting films protected against native oxidation by an in-situ capping layer

    NARCIS (Netherlands)

    Van Bui, H.; Wiggers, F.B.; Jong, de M.P.; Kovalgin, A.Y.

    2014-01-01

    We propose and demonstrate the application of a test structure to characterize electrical properties of ultra-thin titanium nitride films passivated by a non-conducting amorphous silicon layer. The amorphous silicon layer is used to prevent the oxidation of the conducting layer. Platinum electrodes

  2. Simulation study of HEMT structures with HfO2 cap layer for mitigating inverse piezoelectric effect related device failures

    Directory of Open Access Journals (Sweden)

    Deepthi Nagulapally

    2015-01-01

    Full Text Available The Inverse Piezoelectric Effect (IPE is thought to contribute to possible device failure of GaN High Electron Mobility Transistors (HEMTs. Here we focus on a simulation study to probe the possible mitigation of the IPE by reducing the internal electric fields and related elastic energy through the use of high-k materials. Inclusion of a HfO2 “cap layer” above the AlGaN barrier particularly with a partial mesa structure is shown to have potential advantages. Simulations reveal even greater reductions in the internal electric fields by using “field plates” in concert with high-k oxides.

  3. Magnetic stability under magnetic cycling of MgO-based magnetic tunneling junctions with an exchange-biased synthetic antiferromagnetic pinned layer

    Directory of Open Access Journals (Sweden)

    Qiang Hao

    2016-02-01

    Full Text Available We investigate the magnetic stability and endurance of MgO-based magnetic tunnel junctions (MTJs with an exchange-biased synthetic antiferromagnetic (SAF pinned layer. When a uniaxially cycling switching field is applied along the easy axis of the free magnetic layer, the magnetoresistance varies only by 1.7% logarithmically with the number of cycles, while no such change appears in the case of a rotating field. This observation is consistent with the effect of the formation and motion of domain walls in the free layer, which create significant stray fields within the pinned hard layer. Unlike in previous studies, the decay we observed only occurs during the first few starting cycles (<20, at which point there is no further variance in all performance parameters up to 107 cycles. Exchange-biased SAF structure is ideally suited for solid-state magnetic sensors and magnetic memory devices.

  4. Retention of Electronic Conductivity in LaAlO3/SrTiO3 Nanostructures Using a SrCuO2 Capping Layer

    Science.gov (United States)

    Aurino, P. P.; Kalabukhov, A.; Borgani, R.; Haviland, D. B.; Bauch, T.; Lombardi, F.; Claeson, T.; Winkler, D.

    2016-08-01

    The interface between two wide band-gap insulators, LaAlO3 and SrTiO3 (LAO/STO) offers a unique playground to study the interplay and competitions between different ordering phenomena in a strongly correlated two-dimensional electron gas. Recent studies of the LAO/STO interface reveal the inhomogeneous nature of the 2DEG that strongly influences electrical-transport properties. Nanowires needed in future applications may be adversely affected, and our aim is, thus, to produce a more homogeneous electron gas. In this work, we demonstrate that nanostructures fabricated in the quasi-2DEG at the LaAlO3/SrTiO3 interface, capped with a SrCuO2 layer, retain their electrical resistivity and mobility independent of the structure size, ranging from 100 nm to 30 μ m . This is in contrast to noncapped LAO/STO structures, where the room-temperature electrical resistivity significantly increases when the structure size becomes smaller than 1 μ m . High-resolution intermodulation electrostatic force microscopy reveals an inhomogeneous surface potential with "puddles" of a characteristic size of 130 nm in the noncapped samples and a more uniform surface potential with a larger characteristic size of the puddles in the capped samples. In addition, capped structures show superconductivity below 200 mK and nonlinear current-voltage characteristics with a clear critical current observed up to 700 mK. Our findings shed light on the complicated nature of the 2DEG at the LAO/STO interface and may also be used for the design of electronic devices.

  5. Enhanced magnetic damping in La0.7Sr0.3MnO3 capped by normal metal layer

    Directory of Open Access Journals (Sweden)

    G. Y. Luo

    2015-09-01

    Full Text Available La0.7Sr0.3MnO3(LSMO and Pt capped La0.7Sr0.3MnO3 20 nm thick films have been grown on SrTiO3 substrates by pulsed laser deposition. Microstrip line ferromagnetic resonance (MS-FMR technique is then used to investigate their magnetic dynamic properties and to particularly measure the damping constant based on the frequency dependence of microwave absorption linewidth. The results show that the effective damping constant of LSMO(20nm/Pt(5.5nm is three times larger than that of LSMO(20nm and the films present weak in-plane uniaxial anistropy. The enhancement of the magnetic damping constant due to the capping of Pt is the manifestaction of the generation of spin current in Pt layer. Furthermore, the spin current induces an inverse spin Hall effect (ISHE in LSMO(20nm/Pt(5.5nm system, measured using the FMR in cavity with 9.8 GHz excitation frequency. The linear dependence of ISHE on microwave power validates the mechenism of spin pumping in this bilayer system.

  6. Enhanced magnetic damping in La{sub 0.7}Sr{sub 0.3}MnO{sub 3} capped by normal metal layer

    Energy Technology Data Exchange (ETDEWEB)

    Luo, G. Y. [Deparment of Physics, National Taiwan University, Taipei 10617, Taiwan (China); Center for Condensed Matter Sciences, National Taiwan University, Taipei 10617, Taiwan (China); Belmeguenai, M., E-mail: jglin@ntu.edu.tw, E-mail: belmeguenai.mohamed@univ-paris13.fr; Roussigné, Y.; Chérif, S. M. [LSPM (CNRS-UPR 3407), Université Paris 13, Sorbonne Paris Cité, 99 avenue Jean-Baptiste Clément, 93430 Villetaneuse (France); Chang, C. R. [Deparment of Physics, National Taiwan University, Taipei 10617, Taiwan (China); Lin, J. G., E-mail: jglin@ntu.edu.tw, E-mail: belmeguenai.mohamed@univ-paris13.fr [Center for Condensed Matter Sciences, National Taiwan University, Taipei 10617, Taiwan (China)

    2015-09-15

    La{sub 0.7}Sr{sub 0.3}MnO{sub 3}(LSMO) and Pt capped La{sub 0.7}Sr{sub 0.3}MnO{sub 3} 20 nm thick films have been grown on SrTiO{sub 3} substrates by pulsed laser deposition. Microstrip line ferromagnetic resonance (MS-FMR) technique is then used to investigate their magnetic dynamic properties and to particularly measure the damping constant based on the frequency dependence of microwave absorption linewidth. The results show that the effective damping constant of LSMO(20nm)/Pt(5.5nm) is three times larger than that of LSMO(20nm) and the films present weak in-plane uniaxial anistropy. The enhancement of the magnetic damping constant due to the capping of Pt is the manifestaction of the generation of spin current in Pt layer. Furthermore, the spin current induces an inverse spin Hall effect (ISHE) in LSMO(20nm)/Pt(5.5nm) system, measured using the FMR in cavity with 9.8 GHz excitation frequency. The linear dependence of ISHE on microwave power validates the mechenism of spin pumping in this bilayer system.

  7. Core-level spectra and binding energies of transition metal nitrides by non-destructive x-ray photoelectron spectroscopy through capping layers

    Science.gov (United States)

    Greczynski, G.; Primetzhofer, D.; Lu, J.; Hultman, L.

    2017-02-01

    We present the first measurements of x-ray photoelectron spectroscopy (XPS) core level binding energies (BE:s) for the widely-applicable group IVb-VIb polycrystalline transition metal nitrides (TMN's) TiN, VN, CrN, ZrN, NbN, MoN, HfN, TaN, and WN as well as AlN and SiN, which are common components in the TMN-based alloy systems. Nitride thin film samples were grown at 400 °C by reactive dc magnetron sputtering from elemental targets in Ar/N2 atmosphere. For XPS measurements, layers are either (i) Ar+ ion-etched to remove surface oxides resulting from the air exposure during sample transfer from the growth chamber into the XPS system, or (ii) in situ capped with a few nm thick Cr or W overlayers in the deposition system prior to air-exposure and loading into the XPS instrument. Film elemental composition and phase content is thoroughly characterized with time-of-flight elastic recoil detection analysis (ToF-E ERDA), Rutherford backscattering spectrometry (RBS), and x-ray diffraction. High energy resolution core level XPS spectra acquired with monochromatic Al Kα radiation on the ISO-calibrated instrument reveal that even mild etching conditions result in the formation of a nitrogen-deficient surface layer that substantially affects the extracted binding energy values. These spectra-modifying effects of Ar+ ion bombardment increase with increasing the metal atom mass due to an increasing nitrogen-to-metal sputter yield ratio. The superior quality of the XPS spectra obtained in a non-destructive way from capped TMN films is evident from that numerous metal peaks, including Ti 2p, V 2p, Zr 3d, and Hf 4f, exhibit pronounced satellite features, in agreement with previously published spectra from layers grown and analyzed in situ. In addition, the N/metal concentration ratios are found to be 25-90% higher than those obtained from the corresponding ion-etched surfaces, and in most cases agree very well with the RBS and ToF-E ERDA values. The N 1 s BE:s extracted from

  8. Influence of three-dimensional p-buried layer pattern on the performance of 4H-SiC floating junction Schottky barrier diode

    Science.gov (United States)

    Yang, Shuai; Zhang, Yuming; Song, Qingwen; Tang, Xiaoyan; Zhang, Yimen; Huo, Tianjia; Liu, Sicheng; Yuan, Hao

    2015-10-01

    4H-SiC floating junction Schottky barrier diodes (FJ-SBDs) are excellent SiC devices with high Baliga’s figure of merit (BFOM). However, the p-type buried layers in epilayers partially obstruct the current paths, and increase the on-resistance, while the buried layers of dot patterns can reduce the obstruction. In this paper, a three-dimensional (3D) simulation of 4H-SiC FJ-SBDs with dot patterns is reported for the first time. By comparing the results obtained from stripe, square, octagon, and circle patterns, dot patterns are proved to be good choices for buried layers in 4H-SiC FJ-SBDs, and the FJ-SBD with the circle pattern has the highest BFOM of 12.09 GW/cm2, which is 22.62% greater than that of the FJ-SBD with the stripe pattern.

  9. A Novel Super-Junction Lateral Double-Diffused Metal-Oxide-Semiconductor Field Effect Transistor with n-Type Step Doping Buffer Layer

    Institute of Scientific and Technical Information of China (English)

    CHENG Jian-Bing; ZHANG Do; DUAN Bao-Xing; LI Zhao-Ji

    2008-01-01

    A novel super-junction lateral double-diffused metal-nxide-semiconductor field effect transistor(SJ-LDMOSFET)with n-type step doping buffer layer is proposed.The step doping buffer layer almost completely eliminates the substrate-assisted depletion effect.modulates lateral electric field and achieves nearly uniform surface field.On the other hand,the buffer layer also provides another conductive path and reduces on-state resistance.In short,the proposed LDMOSFET improves trade-off performance between breakdown voltage (BV)and specific on-state resistance Ron,sp.Compared with the conventional SJ-LDMOSFET,the simulation results indicate that the BV of the SSJ-LDMOSFET is increased from saturation voltage 121.7 V to 644.9 V;at the same time,the specific when the drift region length and the step number are taken as 48μm and 3,respectively.

  10. An Efficient Solution-Processed Intermediate Layer for Facilitating Fabrication of Organic Multi-Junction Solar Cells

    DEFF Research Database (Denmark)

    Ning Li; Baran, Derya; Forberich, Karen

    2013-01-01

    ):poly(styrenesulfonate) (PEDOT:PSS) is demonstrated for series-connected multi-junction organic solar cells (OSCs). Drying at 80 °C in air is sufficient for this solution-processed IML to obtain excellent functionality and reliability, which allow the use of most of high performance donor materials in the tandem structure...... simulations, which are reliable and promising guidelines for the design and investigation of multi-junction OSCs, are discussed. The outcome of optical and electrical simulations is in excellent agreement with the experimental data, indicating the outstanding efficiency and functionality of this solution...

  11. Spin dependent transport properties of Mn-Ga/MgO/Mn-Ga magnetic tunnel junctions with metal(Mg, Co, Cr) insertion layer

    Energy Technology Data Exchange (ETDEWEB)

    Liang, S. H.; Tao, L. L.; Liu, D. P., E-mail: dpliu@iphy.ac.cn; Han, X. F., E-mail: xfhan@iphy.ac.cn [State Key Laboratory of Magnetism, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Lu, Y. [Institut Jean Lamour, UMR 7198, CNRS-Nancy Université, BP 239, 54506 Vandoeuvre (France)

    2014-04-07

    We report a first principles theoretical investigation of spin polarized quantum transport in Mn{sub 2}Ga/MgO/Mn{sub 2}Ga and Mn{sub 3}Ga/MgO/Mn{sub 3}Ga magnetic tunneling junctions (MTJs) with the consideration of metal(Mg, Co, Cr) insertion layer effect. By changing the concentration of Mn, our calculation shows a considerable disparity in transport properties: A tunneling magnetoresistance (TMR) ratio of 852% was obtained for Mn{sub 2}Ga-based MTJs, however, only a 5% TMR ratio for Mn{sub 3}Ga-based MTJs. In addition, the influence of insertion layer has been considered in our calculation. We found the Co insertion layer can increase the TMR of Mn{sub 2}Ga-based MTJ to 904%; however, the Cr insertion layer can decrease the TMR by 668%; A negative TMR ratio can be obtained with Mg insertion layer. Our work gives a comprehensive understanding of the influence of different insertion layer in Mn-Ga based MTJs. It is proved that, due to the transmission can be modulated by the interfacial electronic structure of insertion, the magnetoresistance ratio of Mn{sub 2}Ga/MgO/Mn{sub 2}Ga MTJ can be improved by inserting Co layer.

  12. High resolution observations of sporadic-E layers within the polar cap ionosphere using a new incoherent scatter radar experiment

    Directory of Open Access Journals (Sweden)

    B. Damtie

    Full Text Available High resolution observations of sporadic-E layers using a new experiment with the EISCAT (European Incoherent SCATter Svalbard radar (ESR are presented. The observations were made by means of a new type of hardware, which was connected in parallel with the standard receiver. The radar beam was aligned with the geomagnetic field. The experiment applies a new modulation principle. Two phase codes, one with 22 bits and the other with 5 bits, were transmitted at separate frequencies. Each bit was further modulated by a 5-bit Barker code. The basic bit length of both transmissions was 6 µs. Instead of storing the lagged products of the ionospheric echoes in the traditional way, samples of both the transmitted pulses and the ionospheric echoes were taken at intervals of 1 µs and stored on hard disk. The lagged products were calculated later in an off-line analysis. In the analysis a sidelobe-free Barker decoding technique was used. The experiment produces range ambiguities, which were removed by mathematical inversion. Sporadic-E layers were observed at 105–115 km altitudes, and they are displayed with a 150-m range resolution and a 10-s time resolution. The layers show sometimes complex shapes, including triple peaked structures. The thickness of these sublayers is of the order of 1–2 km and they may be separated by 5 km in range. While drifting downwards, the sublayers merge together to form a single layer. The plasma inside a layer is found to have a longer correlation length than that of the surrounding plasma. This may be an indication of heavy ions inside the layer. The field-aligned ion velocity is also calculated. It reveals shears in the meridional wind, which suggests that shears probably also exist in the zonal wind. Hence the wind shear mechanism is a possible generation mechanism of the layer. However, observations from the coherent SuperDARN radar indicate the presence of an ionospheric electric field pointing in the sector between

  13. Enhanced Thermochromic Properties and Solar-Heat Shielding Ability of W(x)V(1-x)O2 Thin Films with Ag Nanowires Capping Layers.

    Science.gov (United States)

    Zhao, Li Li; Miao, Lei; Liu, Cheng Yan; Wang, Hai Long; Tanemura, Sakae; Sun, Li Xian; Gao, Xiang; Zhou, Jian Hua

    2015-11-01

    Considerable efforts have been made to shift the phase transition temperature of metal-doped vanadium dioxide (VO2) films nearer the ambient temperature while maintain the excellent thermochromic properties simultaneously. Here, we describe a facile and economic solution-based method to fabricate W-doped VO2 (V(1-x)W(x)O2) thin films with excellent thermochromic properties for the application of smart windows. The substitutional doping of tungsten atoms notably reduces the phase transition temperature to the ambient temperature and retains the excellent thermochromic property. Furthermore, Ag nanowires (NWs) are employed as capping layers to effectively decrease the thermal emissivity from 0.833 to 0.603, while the original near infrared region (NIR) modulation ability is not severely affected. Besides, the Ag NWs layers further depress the phase transition temperature as well as the hysteresis loop width, which is important to the fenestration application. These solution-grown Ag NWs/V(1-x)W(x)O2 thin films exhibit excellent solar modulation ability, narrowed hysteresis loop width as well as low thermal emissivity, which provide a promising perspective into the practical application of VO2-based smart windows.

  14. GaAsSb/GaAsN short-period superlattices as a capping layer for improved InAs quantum dot-based optoelectronics

    Energy Technology Data Exchange (ETDEWEB)

    Utrilla, A. D.; Ulloa, J. M., E-mail: jmulloa@isom.upm.es; Guzman, A.; Hierro, A. [Institute for Systems based on Optoelectronics and Microtechnology (ISOM) and Departamento de Ingeniería Electrónica, Universidad Politécnica de Madrid, Ciudad Universitaria s/n, 28040 Madrid (Spain); Reyes, D. F.; González, D.; Ben, T. [Departamento de Ciencia de los Materiales e IM y QI, Universidad de Cádiz, 11510 Puerto Real (Cádiz) (Spain)

    2014-07-28

    The application of a GaAsSb/GaAsN short-period superlattice capping layer (CL) on InAs/GaAs quantum dots (QDs) is shown to be an option for providing improved luminescence properties to this system. Separating both GaAsSb and GaAsN ternaries during the growth in 2 monolayer-thick phases solves the GaAsSbN immiscibility-related problems. Strong fluctuations in the CL composition and strain field as well as in the QD size distribution are significantly reduced, and a more regular CL interface is also obtained. Room-temperature (RT) photoluminescence (PL) is obtained for overall N contents as high as 3%, yielding PL peak wavelengths beyond 1.4 μm in samples with a type-II band alignment. High external quantum efficiency electroluminescence and photocurrent from the QD ground state are also demonstrated at RT in a single QD-layer p-i-n device. Thus, it becomes possible to combine and transfer the complementary benefits of Sb- and N-containing GaAs alloys to InAs QD-based optoelectronics.

  15. Effects of Sb incorporation in GaAsSb-capping layer on the optical properties of InAs/GaAs QDs grown by Molecular Beam Epitaxy

    Science.gov (United States)

    Salhi, A.; Alshaibani, S.; Alhamdan, M.; Albrithen, H.; Alyamani, A.; El-Desouki, M.

    2017-01-01

    We have investigated the effect of antimony incorporation in GaAsSb as a capping layer on the optical properties of InAs quantum dots grown by Molecular Beam Epitaxy. Atomic Force Microscopy (AFM), High Resolution X-Ray Diffraction (HRXRD), photoluminescence (PL) and power dependent PL at 77 K and 300 K have been used for the characterization of the grown samples. Our analysis showed that the emission wavelength increases with Sb content and reaches ∼1.5 μm for Sb concentration of 22%. To achieve this wavelength, a reduction of the growth temperature of the GaAsSb layer from 500 °C to 440 °C was necessary. The wavelength increase is accompanied by a transition from a type I to type II band alignment and a broadening of the PL spectrum to a value of ∼237 nm for an excitation power of 100 mW. This broadening is attributed to the QD size inhomogeneity increase and Sb atoms redistribution during the in-situ annealing during the growth of the barriers at elevated temperature. Our results show the potential of the InAs/GaAsSb system in the development of broadband light sources and super-luminescent light emitting diodes in 1.2-1.5 μm wavelength range.

  16. The role of Mg interface layer in MgO magnetic tunnel junctions with CoFe and CoFeB electrodes

    Directory of Open Access Journals (Sweden)

    Hyunsoo Yang

    2012-03-01

    Full Text Available The tunneling spin polarization (TSP is directly measured from reactively sputter deposited crystalline MgO tunnel barriers with various CoFe(B compositions using superconducting tunneling spectroscopy. We find that the Mg interface layer thickness dependence of TSP values for CoFeB/Mg/MgO junctions is substantially different from those for CoFe/Mg/MgO especially in the pre-annealed samples due to the formation of boron oxide at the CoFeB/MgO interface. Annealing depletes boron at the interface thus requiring a finite Mg interface layer to prevent CoFeOx formation at the CoFeB/MgO interface so that the TSP values can be optimized by controlling Mg thickness.

  17. Quantum transport in two dimensional electron gas/p-wave superconductor junction with Rashba spin–orbit coupling at the interface and in the normal layer

    Energy Technology Data Exchange (ETDEWEB)

    Mohammadkhani, R., E-mail: rmkhani@znu.ac.ir; Hassanloo, Gh.

    2014-11-01

    We have studied the tunneling conductance of a clean two dimensional electron gas/p- wave superconductor junction with Rashba spin–orbit coupling (RSOC) which is present in the normal layer and at the interface. Using the extended Blonder–Tinkham–Klapwijk formalism we have found that the subgap conductance peaks are shifted to a nonzero bias by RSOC at the interface which are the same as Ref. [1]. It is shown that for low insulating barrier and in the absence of the interface RSOC, the tunneling conductance decreases within energy gap with increasing of the RSOC in the normal layer while for high insulating barrier it enhances by increase of the RSOC. We have also shown that the RSOC inside the normal cannot affect the location of the subgap conductance peaks shifted by the interface RSOC.

  18. Structural and optical studies of GaN pn-junction with AlN buffer layer grown on Si (111) by RF plasma enhanced MBE

    Energy Technology Data Exchange (ETDEWEB)

    Yusoff, Mohd Zaki Mohd; Hassan, Zainuriah; Woei, Chin Che; Hassan, Haslan Abu; Abdullah, Mat Johar [Nano-Optoelectronics Research and Technology Laboratory School of Physics, Universiti Sains Malaysia, 11800 Penang, Malaysia and Department of Applied Sciences Universiti Teknologi MARA (UiTM) 13500 Permatang Pauh, Penang (Malaysia); Department of Applied Sciences Universiti Teknologi MARA (UiTM) 13500 Permatang Pauh, Penang (Malaysia)

    2012-06-29

    GaN pn-junction grown on silicon substrates have been the focus in a number of recent reports and further effort is still necessary to improve its crystalline quality for practical applications. GaN has the high n-type background carrier concentration resulting from native defects commonly thought to be nitrogen vacancies. In this work, we present the growth of pn-junction of GaN on Si (111) substrate using RF plasma-enhanced molecular beam epitaxy (MBE). Both of the layers show uniformity with an average thickness of 0.709 {mu}m and 0.095 {mu}m for GaN and AlN layers, respectively. The XRD spectra indicate that no sign of cubic phase of GaN are found, so it is confirmed that the sample possessed hexagonal structure. It was found that all the allowed Raman optical phonon modes of GaN, i.e. the E2 (low), E1 (high) and A1 (LO) are clearly visible.

  19. 86% TMR at 4.2 K for Amorphous Magnetic-Tunnel-Junctions with Co60Fe20B20 as Free and Pinned Layers

    Institute of Scientific and Technical Information of China (English)

    Feifei LI; Xiufeng HAN; Lixian JIANG; Jing ZHAO; Lei WANG; Rehana Sharif

    2005-01-01

    Single barrier magnetic-tunnel-junctions (MTJs) with the layer structure of Ta(5)/Cu(30)/Ta(5)/Ni79Fe21 (5)/Ir22 Mn78(12)/Co60Fe20B20(4)/Al(0.8)-oxide/Co60Fe20B20(4)/Cu(30)/Ta(5) [thickness unit: nm] using the amorphous Co60Fe20B20 alloy as free and pinned layers were micro-fabricated. The experimental investigations showed that the tunnel magnetoresistance (TMR) ratio and the resistance decrease with increasing dc bias voltage from 0 to 500 mV or with increasing temperature from 4.2 K to RT. A high TMR ratio of 86.2% at 4.2 K, which corresponds to the high spin polarization of Co60Fe20B20, 55%, was observed in the MTJs after annealing at 270℃ for 1 h. High TMR ratio of 53.1%, low junction resistance-area product RS of 3.56 kΩμm2, small coercivity HC of ≤4Oe, and relatively large bias-voltage-at-half-maximum TMR with the value V1/2 of greater than 570 mV at RT have been achieved in such Co-Fe-B MT Js.

  20. Focused helium-ion beam irradiation effects on electrical transport properties of few-layer WSe2: enabling nanoscale direct write homo-junctions

    Science.gov (United States)

    Stanford, Michael G.; Pudasaini, Pushpa Raj; Belianinov, Alex; Cross, Nicholas; Noh, Joo Hyon; Koehler, Michael R.; Mandrus, David G.; Duscher, Gerd; Rondinone, Adam J.; Ivanov, Ilia N.; Ward, T. Zac; Rack, Philip D.

    2016-01-01

    Atomically thin transition metal dichalcogenides (TMDs) are currently receiving significant attention due to their promising opto-electronic properties. Tuning optical and electrical properties of mono and few-layer TMDs, such as tungsten diselenide (WSe2), by controlling the defects, is an intriguing opportunity to synthesize next generation two dimensional material opto-electronic devices. Here, we report the effects of focused helium ion beam irradiation on the structural, optical and electrical properties of few-layer WSe2, via high resolution scanning transmission electron microscopy, Raman spectroscopy, and electrical transport measurements. By controlling the ion irradiation dose, we selectively introduce precise defects in few-layer WSe2 thereby locally tuning the resistivity and transport properties of the material. Hole transport in the few layer WSe2 is degraded more severely relative to electron transport after helium ion irradiation. Furthermore, by selectively exposing material with the ion beam, we demonstrate a simple yet highly tunable method to create lateral homo-junctions in few layer WSe2 flakes, which constitutes an important advance towards two dimensional opto-electronic devices. PMID:27263472

  1. Inhomogeneous free layer in perpendicular magnetic tunnel junctions and its impact on the effective anisotropies and spin transfer torque switching efficiency

    Science.gov (United States)

    Timopheev, A. A.; Teixeira, B. M. S.; Sousa, R. C.; Aufret, S.; Nguyen, T. N.; Buda-Prejbeanu, L. D.; Chshiev, M.; Sobolev, N. A.; Dieny, B.

    2017-07-01

    Magnetoresistive and magnetoresonance measurements carried out on patterned perpendicular magnetic tunnel junction pillars and full-sheet films reveal magnetic inhomogeneities of FeCoB free layer grown on MgO and coated with Ta. At low FeCoB thicknesses, the layer behaves as an ensemble of weakly coupled grains resulting in a decrease of the free-layer thermal stability. In contrast, for thicker layers, the grains become more strongly coupled but strong magnetic inhomogeneities remain, yielding the emergence and further increase of a second-order magnetic anisotropy term (˜K2 effco s4θ ), eventually resulting in an easy-cone anisotropy. We show that the static and dynamic magnetic properties of such a free layer can be successfully described by a granular model with three thickness-dependent parameters: mean perpendicular anisotropy of the grains, grain-to-grain anisotropy distribution, and intergrain exchangelike coupling strength. Easy-cone anisotropy may help reduce the stochasticity of the spin transfer torque switching. However, it arises at intermediate values of the intergrain exchange coupling where the spin transfer torque (STT) switching efficiency is degraded, as shown by multimacrospin modeling. This is due to the excitation of exchange modes contributing weakly to the STT switching process while dissipating part of the STT energy.

  2. Intercomparisons of marine boundary layer cloud properties from the ARM CAP-MBL campaign and two MODIS cloud products

    Science.gov (United States)

    Zhang, Zhibo; Dong, Xiquan; Xi, Baike; Song, Hua; Ma, Po-Lun; Ghan, Steven J.; Platnick, Steven; Minnis, Patrick

    2017-02-01

    From April 2009 to December 2010, the Department of Energy Atmospheric Radiation Measurement (ARM) program carried out an observational field campaign on Graciosa Island, targeting the marine boundary layer (MBL) clouds over the Azores region. In this paper, we present an intercomparison of the MBL cloud properties, namely, cloud liquid water path (LWP), cloud optical thickness (COT), and cloud-droplet effective radius (CER), among retrievals from the ARM mobile facility and two Moderate Resolution Imaging Spectroradiometer (MODIS) cloud products (Goddard Space Flight Center (GSFC)-MODIS and Clouds and Earth's Radiant Energy System-MODIS). A total of 63 daytime single-layer MBL cloud cases are selected for intercomparison. Comparison of collocated retrievals indicates that the two MODIS cloud products agree well on both COT and CER retrievals, with the correlation coefficient R > 0.95, despite their significant difference in spatial sampling. In both MODIS products, the CER retrievals based on the 2.1 µm band (CER2.1) are significantly larger than those based on the 3.7 µm band (CER3.7). The GSFC-MODIS cloud product is collocated and compared with ground-based ARM observations at several temporal-spatial scales. In general, the correlation increases with more precise collocation. For the 63 selected MBL cloud cases, the GSFC-MODIS LWP and COT retrievals agree reasonably well with the ground-based observations with no apparent bias and correlation coefficient R around 0.85 and 0.70, respectively. However, GSFC-MODIS CER3.7 and CER2.1 retrievals have a lower correlation (R 0.5) with the ground-based retrievals. For the 63 selected cases, they are on average larger than ground observations by about 1.5 µm and 3.0 µm, respectively. Taking into account that the MODIS CER retrievals are only sensitive to cloud top reduces the bias only by 0.5 µm.

  3. A CoFeB/MgO/CoFeB perpendicular magnetic tunnel junction coupled to an in-plane exchange-biased magnetic layer

    Energy Technology Data Exchange (ETDEWEB)

    Zhu, M., E-mail: mzhu@sunycnse.com; Chong, H.; Vu, Q. B.; Vo, T.; Brooks, R.; Stamper, H.; Bennett, S.; Piccirillo, J. [Colleges of Nanoscale Science and Engineering, SUNY Polytechnic Institute, Albany, New York 12203 (United States)

    2015-05-25

    We report a stack structure which utilizes an in-plane exchange-biased magnetic layer to influence the coercivity of the bottom CoFeB layer in a CoFeB/MgO/CoFeB perpendicular magnetic tunnel junction. By employing a thickness wedge deposition technique, we were able to study various aspects of this stack using vibrating sample magnetometer including: (1) the coupling between two CoFeB layers as a function of MgO thickness; and (2) the coupling between the bottom CoFeB and the in-plane magnetic layer as a function of Ta spacer thickness. Furthermore, modification of the bottom CoFeB coercivity allows one to measure tunneling magnetoresistance and resistance-area product (RA) of CoFeB/MgO/CoFeB in this pseudo-spin-valve format using current-in-plane-tunneling technique, without resorting to (Co/Pt){sub n} or (Co/Pd){sub n} multilayer pinning.

  4. Effect of Same-Temperature GaN Cap Layer on the InGaN/GaN Multiquantum Well of Green Light-Emitting Diode on Silicon Substrate

    Directory of Open Access Journals (Sweden)

    Changda Zheng

    2013-01-01

    Full Text Available GaN green LED was grown on Si (111 substrate by MOCVD. To enhance the quality of InGaN/GaN MQWs, same-temperature (ST GaN protection layers with different thickness of 8 Å, 15 Å, and 30 Å were induced after the InGaN quantum wells (QWs layer. Results show that a relative thicker cap layer is benefit to get InGaN QWs with higher In percent at fixed well temperature and obtain better QW/QB interface. As the cap thickness increases, the indium distribution becomes homogeneous as verified by fluorescence microscope (FLM. The interface of MQWs turns to be abrupt from XRD analysis. The intensity of photoluminescence (PL spectrum is increased and the FWHM becomes narrow.

  5. Cradle Cap (For Parents)

    Science.gov (United States)

    ... Kids to Be Smart About Social Media Cradle Cap (Infantile Seborrheic Dermatitis) KidsHealth > For Parents > Cradle Cap ( ... many babies develop called cradle cap. About Cradle Cap Cradle cap is the common term for seborrheic ...

  6. Significant changes in the photo-reactivity of TiO2 in the presence of a capped natural dissolved organic matter layer.

    Science.gov (United States)

    Peng, Hong; Chen, Yuan; Mao, Lu; Zhang, Xu

    2017-03-01

    Natural dissolved organic matter (NDOM) in surface waters has a high sorption affinity for TiO2 during long contact. An attached NDOM layer can act as a conduction band electron and/or valance band hole acceptor, and NDOM can also decrease the concentration of hydroxyl radicals (OH) in the bulk phase. Therefore, the degradation kinetics and mechanism for degradation of acetaminophen on NDOM capped TiO2 (NDOM-TiO2) are significantly different from those on raw TiO2. Quantum calculation results suggest that hydroxylation to the ortho position in relation to the acetamide group is more favorable. Although OH induced hydroxylation is the predominant pathway for degradation of acetaminophen on TiO2, one-electron oxidation of acetaminophen by a valance band hole, excited triplet NDOM or NDOM radical cation is the major degradation pathway on NDOM-TiO2. This study is the first to detect and confirm APAP oligomers as intermediates during the degradation of acetaminophen by TiO2 photocatalysis, especially when using NDOM-TiO2 as a catalyst. The results suggest the reactivity of TiO2 could change significantly after long exposure to natural water, which need to be concerned about for removal of micropollutants in surface water by TiO2 photocatalysis.

  7. Quantitative analysis of the interplay between InAs quantum dots and wetting layer during the GaAs capping process

    Science.gov (United States)

    González, D.; Braza, V.; Utrilla, A. D.; Gonzalo, A.; Reyes, D. F.; Ben, T.; Guzman, A.; Hierro, A.; Ulloa, J. M.

    2017-10-01

    A procedure to quantitatively analyse the relationship between the wetting layer (WL) and the quantum dots (QDs) as a whole in a statistical way is proposed. As we will show in the manuscript, it allows determining, not only the proportion of deposited InAs held in the WL, but also the average In content inside the QDs. First, the amount of InAs deposited is measured for calibration in three different WL structures without QDs by two methodologies: strain mappings in high-resolution transmission electron microscopy images and compositional mappings with ChemiSTEM x-ray energy spectrometry. The area under the average profiles obtained by both methodologies emerges as the best parameter to quantify the amount of InAs in the WL, in agreement with high-resolution x-ray diffraction results. Second, the effect of three different GaAs capping layer (CL) growth rates on the decomposition of the QDs is evaluated. The CL growth rate has a strong influence on the QD volume as well as the WL characteristics. Slower CL growth rates produce an In enrichment of the WL if compared to faster ones, together with a diminution of the QD height. In addition, assuming that the QD density does not change with the different CL growth rates, an estimation of the average In content inside the QDs is given. The high Ga/In intermixing during the decomposition of buried QDs does not only trigger a reduction of the QD height, but above all, a higher impoverishment of the In content inside the QDs, therefore modifying the two most important parameters that determine the optical properties of these structures.

  8. Structural properties of the active layer of discotic hexabenzocoronene/perylene diimide bulk hetero junction photovoltaic devices: The role of alkyl side chain length

    Energy Technology Data Exchange (ETDEWEB)

    Al-Hussein, M., E-mail: m.alhussein@ju.edu.jo [Department of Physics, University of Jordan, Amman 11942 (Jordan); Hesse, H.C.; Weickert, J. [Ludwig-Maximilians-University Munich, Department of Physics and Center for NanoScience(CeNS), Amalienstr.54, 80799 Munich (Germany); Doessel, L.; Feng, X.; Muellen, K. [Max Planck Institute for Polymer Research, Ackermannweg 10, 55128 Mainz (Germany); Schmidt-Mende, L. [Ludwig-Maximilians-University Munich, Department of Physics and Center for NanoScience(CeNS), Amalienstr.54, 80799 Munich (Germany)

    2011-10-31

    We investigate thin blend films of phenyl-substituted hexa-peri-hexabenzocoronenes (HBC) with various alkyl side chain lengths ((CH{sub 2})n, n = 6, 8, 12 and 16)/perylenediimide (PDI). These blends constitute the active layers in bulk-hetero junction organic solar cells we studied recently [1]. Their structural properties are studied by both scanning electron microscopy and X-ray diffraction measurements. The results support the evidence for the formation of HBC donor-PDI acceptor complexes in all blends regardless of the side chain length of the HBC molecule. These complexes are packed into a layered structure parallel to the substrate for short side chain HBC molecules (n = 6 and 8). The layered structure is disrupted by increasing the side chain length of the HBC molecule and eventually a disordered structure is formed for long side chains (n > 12). We attribute this behavior to the size difference between the aromatic parts of the HBC and PDI molecules. For short side chains, the size difference results in a room for the side chains of the two molecules to fill in the space around the aromatic cores. For long side chains (n > 12), the empty space will not be enough to accommodate this increase, leading to the disruption of the layered structure and a rather disordered structure is formed. Our results highlight the importance of the donor-acceptor interaction in a bulk heterojunction active layer as well as the geometry of the two molecules and their role in determining the structure of the active layer and thus their photovoltaic performance.

  9. Ectopic overexpression of engrailed-2 in cerebellar Purkinje cells causes restricted cell loss and retarded external germinal layer development at lobule junctions.

    Science.gov (United States)

    Baader, S L; Sanlioglu, S; Berrebi, A S; Parker-Thornburg, J; Oberdick, J

    1998-03-01

    Members of the En and Wnt gene families seem to play a key role in the early specification of the brain territory that gives rise to the cerebellum, the midhindbrain junction. To analyze the possible continuous role of the En and Wnt signaling pathway in later cerebellar patterning and function, we expressed En-2 ectopically in Purkinje cells during late embryonic and postnatal cerebellar development. As a result of this expression, the cerebellum is greatly reduced in size, and Purkinje cell numbers throughout the cerebellum are reduced by more than one-third relative to normal animals. Detailed analysis of both adult and developing cerebella reveals a pattern of selectivity to the loss of Purkinje cells and other cerebellar neurons. This is observed as a general loss of prominence of cerebellar fissures that is highlighted by a total loss of sublobular fissures. In contrast, mediolateral patterning is generally only subtly affected. That En-2 overexpression selectively affects Purkinje cells in the transition zone between lobules is evidenced by direct observation of selective Purkinje cell loss in certain fissures and by the observation that growth and migration of the external germinal layer (EGL) is selectively retarded in the deep fissures during early postnatal development. Thus, in addition to demonstrating the critical role of Purkinje cells in the generation and migration of granule cells, the heterogeneous distribution of cellular effects induced by ectopic En expression suggests a relatively late morphogenetic role for this and other segment polarity proteins, mainly oriented at lobule junctions.

  10. Minimum entropy principle-based solar cell operation without a pn-junction and a thin CdS layer to extract the holes from the emitter

    Science.gov (United States)

    Böer, Karl W.

    2016-10-01

    The solar cell does not use a pn-junction to separate electrons from holes, but uses an undoped CdS layer that is p-type inverted when attached to a p-type collector and collects the holes while rejecting the backflow of electrons and thereby prevents junction leakage. The operation of the solar cell is determined by the minimum entropy principle of the cell and its external circuit that determines the electrochemical potential, i.e., the Fermi-level of the base electrode to the operating (maximum power point) voltage. It leaves the Fermi level of the metal electrode of the CdS unchanged, since CdS does not participate in the photo-emf. All photoelectric actions are generated by the holes excited from the light that causes the shift of the quasi-Fermi levels in the generator and supports the diffusion current in operating conditions. It is responsible for the measured solar maximum power current. The open circuit voltage (Voc) can approach its theoretical limit of the band gap of the collector at 0 K and the cell increases the efficiency at AM1 to 21% for a thin-film CdS/CdTe that is given as an example here. However, a series resistance of the CdS forces a limitation of its thickness to preferably below 200 Å to avoid unnecessary reduction in efficiency or Voc. The operation of the CdS solar cell does not involve heated carriers. It is initiated by the field at the CdS/CdTe interface that exceeds 20 kV/cm that is sufficient to cause extraction of holes by the CdS that is inverted to become p-type. Here a strong doubly charged intrinsic donor can cause a negative differential conductivity that switches-on a high-field domain that is stabilized by the minimum entropy principle and permits an efficient transport of the holes from the CdTe to the base electrode. Experimental results of the band model of CdS/CdTe solar cells are given and show that the conduction bands are connected in the dark, where the electron current must be continuous, and the valence bands are

  11. Free- and reference-layer magnetization modes versus in-plane magnetic field in a magnetic tunnel junction with perpendicular magnetic easy axis

    Science.gov (United States)

    Mazraati, Hamid; Le, Tuan Q.; Awad, Ahmad A.; Chung, Sunjae; Hirayama, Eriko; Ikeda, Shoji; Matsukura, Fumihiro; Ohno, Hideo; Åkerman, Johan

    2016-09-01

    We study the magnetodynamic modes of a magnetic tunnel junction with perpendicular magnetic easy axis (p-MTJ) in in-plane magnetic fields using device-level ferromagnetic resonance spectroscopy. We compare our experimental results to those of micromagnetic simulations of the entire p-MTJ. Using an iterative approach to determine the material parameters that best fit our experiment, we find excellent agreement between experiments and simulations in both the static magnetoresistance and magnetodynamics in the free and reference layers. From the micromagnetic simulations, we determine the spatial mode profiles, the localization of the modes and, as a consequence, their distribution in the frequency domain due to the inhomogeneous internal field distribution inside the p-MTJ under different applied field regimes. We also conclude that the excitation mechanism is a combination of the microwave voltage modulated perpendicular magnetic anisotropy, the microwave Oersted field, and the spin-transfer torque generated by the microwave current.

  12. An induced junction photovoltaic cell

    Science.gov (United States)

    Call, R. L.

    1974-01-01

    Silicon solar cells operating with induced junctions rather than diffused junctions have been fabricated and tested. Induced junctions were created by forming an inversion layer near the surface of the silicon by supplying a sheet of positive charge above the surface. Measurements of the response of the inversion layer cell to light of different wavelengths indicated it to be more sensitive to the shorter wavelengths of the sun's spectrum than conventional cells. The greater sensitivity occurs because of the shallow junction and the strong electric field at the surface.

  13. Role of the buffer layer in the active junction in amorphous-crystalline silicon heterojunction solar cells

    Science.gov (United States)

    Pallarès, J.; Schropp, R. E. I.

    2000-07-01

    We fabricated pn and pin a-SiC:H/c-Si heterojunction solar cells following two different processes. In the first approach, wafers were subjected to an extra atomic hydrogen (produced by hot wire chemical vapor deposition) prior to the deposition of the amorphous layer. A reduction in the open-circuit voltage was observed for the passivated cells due to their higher leakage current. In the second process, pin solar cells with two different quality intrinsic a-Si:H buffer layers were fabricated using plasma enhanced chemical vapor deposition. The cells with a device quality buffer layer (deposited at higher temperature) showed better performance than those with a buffer layer with high hydrogen content and higher defect density (deposited at lower temperatures).

  14. Isolating the Photovoltaic Junction: Atomic Layer Deposited TiO2-RuO2 Alloy Schottky Contacts for Silicon Photoanodes.

    Science.gov (United States)

    Hendricks, Olivia L; Scheuermann, Andrew G; Schmidt, Michael; Hurley, Paul K; McIntyre, Paul C; Chidsey, Christopher E D

    2016-09-14

    We synthesized nanoscale TiO2-RuO2 alloys by atomic layer deposition (ALD) that possess a high work function and are highly conductive. As such, they function as good Schottky contacts to extract photogenerated holes from n-type silicon while simultaneously interfacing with water oxidation catalysts. The ratio of TiO2 to RuO2 can be precisely controlled by the number of ALD cycles for each precursor. Increasing the composition above 16% Ru sets the electronic conductivity and the metal work function. No significant Ohmic loss for hole transport is measured as film thickness increases from 3 to 45 nm for alloy compositions ≥ 16% Ru. Silicon photoanodes with a 2 nm SiO2 layer that are coated by these alloy Schottky contacts having compositions in the range of 13-46% Ru exhibit average photovoltages of 525 mV, with a maximum photovoltage of 570 mV achieved. Depositing TiO2-RuO2 alloys on nSi sets a high effective work function for the Schottky junction with the semiconductor substrate, thus generating a large photovoltage that is isolated from the properties of an overlying oxygen evolution catalyst or protection layer.

  15. Synthesis and characterization of water-dispersed CdSe/CdS core-shell quantum dots prepared via Layer-by-layer Method capped with carboxylic-functionalized poly(vinyl alcohol)

    Energy Technology Data Exchange (ETDEWEB)

    Ramanery, Fabio Pereira; Mansur, Alexandra Ancelmo Piscitelli; Mansur, Herman Sander, E-mail: hmansur@demet.ufmg.br [Universidade Federal de Minas Gerais (UFMG), Belo Horizonte, MG (Brazil). Dept. de Metalurgia e Engenharia dos Materiais. Centro de Nanociencia, Nanotecnologia e Inovacao

    2014-08-15

    The main goal of this work was to synthesize CdSe/CdS (core-shell) nanoparticles stabilized by polymer ligand using entirely aqueous colloidal chemistry at room temperature. First, the CdSe core was prepared using precursors and acid-functionalized poly(vinyl alcohol) as the capping ligand. Next, a CdS shell was grown onto the CdSe core via the layer-by-layer technique. The CdS shell was formed by two consecutive monolayers, as estimated by empirical mathematical functions. The nucleation and growth of CdSe quantum dots followed by CdS shell deposition were characterized by UV-vis spectroscopy, photoluminescence (PL) spectroscopy and transmission electron microscopy (TEM). The results indicated a systematic red-shift of the absorption and emission spectra after the deposition of CdS, indicating the shell growth onto the CdSe core. TEM coupled with electron diffraction analysis revealed the presence of CdSe/CdS with an epitaxial shell growth. Therefore, it may be concluded that CdSe/CdS quantum dots with core-shell nanostructure were effectively synthesized.(author)

  16. Death cap

    DEFF Research Database (Denmark)

    Rudbæk, Torsten R; Kofoed, Pernille Bouteloup; Bove, Jeppe

    2014-01-01

    Death cap (Amanita phalloides) is commonly found and is one of the five most toxic fungi in Denmark. Toxicity is due to amatoxin, and poisoning is a serious medical condition, causing organ failure with potential fatal outcome. Acknowledgement and clarification of exposure, symptomatic and focused...

  17. High strain amount in recessed junctions induced by selectively deposited boron-doped SiGe layers

    Energy Technology Data Exchange (ETDEWEB)

    Radamson, H.H. [School of Information and Communication Technology, KTH (Royal Institute of Technology) Isafjordsg. 22-26, Electrum 229, 16640 Kista (Sweden)], E-mail: rad@kth.se; Kolahdouz, M.; Ghandi, R.; Ostling, M. [School of Information and Communication Technology, KTH (Royal Institute of Technology) Isafjordsg. 22-26, Electrum 229, 16640 Kista (Sweden)

    2008-12-05

    This work presents the selective epitaxial growth (SEG) of Si{sub 1-x}Ge{sub x} (x = 0.15-0.315) layers with high amount of boron (1 x 10{sup 20}-1 x 10{sup 21} cm{sup -3}) in recessed or unprocessed (elevated) openings for source/drain applications in CMOS has been studied. The influence of the growth rate and strain on boron incorporation has been studied. A focus has been made on the strain distribution and boron incorporation in SEG of SiGe layers.

  18. Effects of bath composition on the morphology of electroless-plated Cu electrodes for hetero-junctions with intrinsic thin layer solar cell

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Woon Young [Surface Technology R& BD Group, Korea Institute of Industrial Technology (KITECH), Gaetbeol-ro 156, Yeonsu-gu, Incheon 406-840 (Korea, Republic of); Lee, Yu Jin [Surface Technology R& BD Group, Korea Institute of Industrial Technology (KITECH), Gaetbeol-ro 156, Yeonsu-gu, Incheon 406-840 (Korea, Republic of); Department of Materials Science & Engineering, Yonsei University, Yonsei-ro 50, Seodaemun-Gu, Seoul 120-749 (Korea, Republic of); Lee, Min Hyung, E-mail: minhyung@kitech.re.kr [Surface Technology R& BD Group, Korea Institute of Industrial Technology (KITECH), Gaetbeol-ro 156, Yeonsu-gu, Incheon 406-840 (Korea, Republic of)

    2015-07-31

    The morphology of an electroless-plated Cu electrode was investigated as a function of bath composition. To enhance the selectivity of Cu electrode deposition on the surface of an indium tin oxide layer, a Ti/Cu multi-layer was deposited as a Cu electrode seed layer by physical vapor deposition, and then electroless plating was performed using various complexing agents and a surfactant. The degree of selectivity was effectively influenced by the type of complexing agent. The electroless plating solution containing N,N,N′,N′-tetrakis(2-hydroxypropyl)ethylenediamine (THPED) as complexing agent showed excellent selective growth of the Cu electrode as compared to the solution containing ethylenediaminetetraacetic acid. Even though THPED led to better selective growth of the electroless-plated Cu electrode, the aspect ratio of electrode lateral growth was about 2.7 times that of vertical growth. By adding a nonionic surfactant, the ratio between vertical growth rate and lateral growth rate was improved about 4.6 times. The Cu–THPED electroless plating with nonionic surfactant provided a drastic decrease in lateral growth rate, compared with the Cu–THPED electroless plating bath excluding nonionic surfactant. The Cu–THPED solution including nonionic surfactant is a promising composition of electroless plating solution for the clear selective plating of Cu electrodes on hetero-junctions with intrinsic thin layer solar cells. - Highlights: • Selective electroless plating (SEP) depends on binding strength of complexing agent. • The SEP was performed using Cu-N,N,N′,N′-tetrakis(2-hydroxypropyl)ethylenediamine. • A surfactant is able to remove hydrogen bubbles on Cu electrode surface. • The growth of Cu electrode was improved in vertical direction by adding surfactant.

  19. The role of ZrN capping layer deposited on ultra-thin high-k Zr-doped yttrium oxide for metal-gate metal–insulator–semiconductor applications

    Energy Technology Data Exchange (ETDEWEB)

    Juan, Pi-Chun; Mong, Fan-Chen; Huang, Jen-Hung [Department of Materials Engineering and Center for Thin Film Technologies and Applications, Ming Chi University of Technology, New Taipei City 243, Taiwan (China)

    2013-08-28

    Metal-gate MIS structures with and without ZrN capping layer on high-k Y{sub 2}O{sub 3}:Zr/Y{sub 2}O{sub 3} stack were fabricated. The binding energies and depth profiles were investigated by x-ray photoelectron spectroscopy (XPS). The x-ray diffraction (XRD) patterns were compared. It is found that Ti out-diffusion into Zr-based high-k dielectric becomes lesser with the insertion of ZrN capping layer. The electrical properties of current-voltage (I-V) and capacitance-voltage (C-V) characteristics were measured in the postannealing temperature range of 550–850 °C. According to the defect reaction model, Zr cation vacancies are associated with the concentration of Ti ion by a transition from +3 to +2 states. The amount of Zr cation vacancies is quantified and equal to a half of Ti substitution amount at Zr site. The reduction in cation vacancies at high temperatures can well explain the decrease in ΔV{sub FB} for samples with ZrN layer. In contrast, an excess of Ti outdiffusion will produce the interstitial defects in high-k films without ZrN capping.

  20. Material design of plasma-enhanced chemical vapour deposition SiCH films for low-k cap layers in the further scaling of ultra-large-scale integrated devices-Cu interconnects

    Directory of Open Access Journals (Sweden)

    Hideharu Shimizu, Shuji Nagano, Akira Uedono, Nobuo Tajima, Takeshi Momose and Yukihiro Shimogaki

    2013-01-01

    Full Text Available Cap layers for Cu interconnects in ultra-large-scale integrated devices (ULSIs, with a low dielectric constant (k-value and strong barrier properties against Cu and moisture diffusion, are required for the future further scaling of ULSIs. There is a trade-off, however, between reducing the k-value and maintaining strong barrier properties. Using quantum mechanical simulations and other theoretical computations, we have designed ideal dielectrics: SiCH films with Si–C2H4–Si networks. Such films were estimated to have low porosity and low k; thus they are the key to realizing a cap layer with a low k and strong barrier properties against diffusion. For fabricating these ideal SiCH films, we designed four novel precursors: isobutyl trimethylsilane, diisobutyl dimethylsilane, 1, 1-divinylsilacyclopentane and 5-silaspiro [4,4] noname, based on quantum chemical calculations, because such fabrication is difficult by controlling only the process conditions in plasma-enhanced chemical vapor deposition (PECVD using conventional precursors. We demonstrated that SiCH films prepared using these newly designed precursors had large amounts of Si–C2H4–Si networks and strong barrier properties. The pore structure of these films was then analyzed by positron annihilation spectroscopy, revealing that these SiCH films actually had low porosity, as we designed. These results validate our material and precursor design concepts for developing a PECVD process capable of fabricating a low-k cap layer.

  1. Apical cap

    Energy Technology Data Exchange (ETDEWEB)

    McLoud, T.C.; Isler, R.J.; Novelline, R.A.; Putman, C.E.; Simeone, J.; Stark, P.

    1981-08-01

    Apical caps, either unilateral or bilateral, are a common feature of advancing age and are usually the result of subpleural scarring unassociated with other diseases. Pancoast (superior sulcus) tumors are a well recognized cause of unilateral asymmetric apical density. Other lesions arising in the lung, pleura, or extrapleural space may produce unilateral or bilateral apical caps. These include: (1) inflammatory: tuberculosis and extrapleural abscesses extending from the neck; (2) post radiation fibrosis after mantle therapy for Hodgkin disease or supraclavicular radiation in the treatment of breast carcinoma; (3) neoplasm: lymphoma extending from the neck or mediastinum, superior sulcus bronchogenic carcinoma, and metastases; (4) traumatic: extrapleural dissection of blood from a ruptured aorta, fractures of the ribs or spine, or hemorrhage due to subclavian line placement; (5) vascular: coarctation of the aorta with dilated collaterals over the apex, fistula between the subclavian artery and vein; and (6) miscellaneous: mediastinal lipomatosis with subcostal fat extending over the apices.

  2. Study on influences of TiN capping layer on time-dependent dielectric breakdown characteristic of ultra-thin EOT high-k metal gate NMOSFET with kMC TDDB simulations

    Science.gov (United States)

    Xu, Hao; Yang, Hong; Luo, Wei-Chun; Xu, Ye-Feng; Wang, Yan-Rong; Tang, Bo; Wang, Wen-Wu; Qi, Lu-Wei; Li, Jun-Feng; Yan, Jiang; Zhu, Hui-Long; Zhao, Chao; Chen, Da-Peng; Ye, Tian-Chun

    2016-08-01

    The thickness effect of the TiN capping layer on the time dependent dielectric breakdown (TDDB) characteristic of ultra-thin EOT high-k metal gate NMOSFET is investigated in this paper. Based on experimental results, it is found that the device with a thicker TiN layer has a more promising reliability characteristic than that with a thinner TiN layer. From the charge pumping measurement and secondary ion mass spectroscopy (SIMS) analysis, it is indicated that the sample with the thicker TiN layer introduces more Cl passivation at the IL/Si interface and exhibits a lower interface trap density. In addition, the influences of interface and bulk trap density ratio N it/N ot are studied by TDDB simulations through combining percolation theory and the kinetic Monte Carlo (kMC) method. The lifetime reduction and Weibull slope lowering are explained by interface trap effects for TiN capping layers with different thicknesses. Project supported by the National High Technology Research and Development Program of China (Grant No. SS2015AA010601), the National Natural Science Foundation of China (Grant Nos. 61176091 and 61306129), and the Opening Project of Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of MicroElectronics of Chinese Academy of Sciences.

  3. Three-dimensional integration technology of magnetic tunnel junctions for magnetoresistive random access memory application

    Science.gov (United States)

    Yakushiji, Kay; Takagi, Hideki; Watanabe, Naoya; Fukushima, Akio; Kikuchi, Katsuya; Kurashima, Yuuichi; Sugihara, Atsushi; Kubota, Hitoshi; Yuasa, Shinji

    2017-06-01

    Three-dimensional integration processes (based on direct wafer bonding and back-surface silicon removal) for magnetic tunnel junctions with perpendicular magnetization (p-MTJs) were developed. Perfect wafer bonding, namely, bonding without interfacial voids, and damageless silicon removal were successfully demonstrated by using very flat tantalum cap layers. Moreover, p-MTJ nanopillars subjected to these processes exhibited no degradation in magnetoresistance or spin-transfer-torque (STT) switching. Magnetoresistive random access memory (MRAM) technology incorporating these processes (direct wafer bonding and back-surface silicon removal) will make it possible to integrate epitaxial MTJs (with a single-crystal tunnel barrier) and ferromagnetic electrode layers (based on new materials).

  4. Dynamic atomic layer epitaxy of InN on/in +c-GaN matrix: Effect of “In+N” coverage and capping timing by GaN layer on effective InN thickness

    Energy Technology Data Exchange (ETDEWEB)

    Yoshikawa, Akihiko, E-mail: yoshi@faculty.chiba-u.jp [Center for SMART Green Innovation Research, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522 (Japan); Graduate School of Engineering, Kogakuin University, Hachioji, Tokyo 192-0015 (Japan); Kusakabe, Kazuhide; Hashimoto, Naoki [Center for SMART Green Innovation Research, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522 (Japan); Hwang, Eun-Sook; Itoi, Takaomi [Graduate School of Engineering, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522 (Japan)

    2016-01-11

    The growth front in the self-organizing and self-limiting epitaxy of ∼1 monolayer (ML)-thick InN wells on/in +c-GaN matrix by molecular beam epitaxy (MBE) has been studied in detail, with special attention given to the behavior and role of the N atoms. The growth temperatures of interest are above 600 °C, far higher than the typical upper critical temperature of 500 °C in MBE. It was confirmed that 2 ML-thick InN wells can be frozen/inserted in GaN matrix at 620 °C, but it was found that N atoms at the growth front tend to selectively re-evaporate more quickly than In atoms at temperatures higher than 650 °C. As a result, the effective thickness of inserted InN wells in the GaN matrix at 660–670 °C were basically 1 ML or sub-ML, even though they were capped by a GaN barrier at the time of 2 ML “In+N” coverage. Furthermore, it was found that the N atoms located below In atoms in the dynamic atomic layer epitaxy growth front had remarkably weaker bonding to the +c-GaN surface.

  5. Perfect spin filtering controlled by an electric field in a bilayer graphene junction: Effect of layer-dependent exchange energy

    Science.gov (United States)

    Kitakorn, Jatiyanon; I-Ming, Tang; Bumned, Soodchomshom

    2016-07-01

    Magneto transport of carriers with a spin-dependent gap in a ferromagnetic-gated bilayer of graphene is investigated. We focus on the effect of an energy gap induced by the mismatch of the exchange fields in the top and bottom layers of an AB-stacked graphene bilayer. The interplay of the electric and exchange fields causes the electron to acquire a spin-dependent energy gap. We find that, only in the case of the anti-parallel configuration, the effect of a magnetic-induced gap will give rise to perfect spin filtering controlled by the electric field. The resolution of the spin filter may be enhanced by varying the bias voltage. Perfect switching of the spin polarization from + 100% to -100% by reversing the direction of electric field is predicted. Giant magnetoresistance is predicted to be easily realized when the applied electric field is smaller than the magnetic energy gap. It should be pointed out that the perfect spin filter is due to the layer-dependent exchange energy. This work points to the potential application of bilayer graphene in spintronics. Project supported by the Kasetsart University Research and Development Institute (KURDI) and Thailand Research Fund (TRF) (Grant No. TRG5780274).

  6. Effect of a Ti capping layer on thermal stability of NiSi formed from Ni thin films deposited by metal-organic chemical vapor deposition using a Ni(iPr-DAD)2 precursor

    Science.gov (United States)

    Park, Jingyu; Jeon, Heeyoung; Kim, Hyunjung; Jang, Woochool; Kang, Chunho; Yuh, Junhan; Jeon, Hyeongtag

    2015-02-01

    Ni films were deposited by metal-organic chemical vapor deposition (MOCVD) using a novel Ni precursor, bis(1,4-di-isopropyl-1,3-diazabutadienyl)nickel [Ni(iPr-DAD)2], and NH3 gas. To optimize process conditions, the deposition temperature and reactant partial pressure were varied from 200 to 350 °C and from 0.2 to 0.99 Torr, respectively. Ni films deposited at 300 °C with a reactant pressure of 0.8 Torr exhibited excellent quality, and had a low carbon impurity concentration of around 4%. In addition, a sacrificial Ti capping layer was deposited by an in situ e-beam evaporator on top of the Ni films to enhance the thermal stability of the subsequently formed NiSi films. Both the Ti-capped and uncapped Ni films were annealed by a two-step method, with a first annealing conducted at 500 °C, followed by wet etching and then a second annealing carried out from 500 to 900 °C. The Ti capping layer did not affect the silicidation kinetic process, but by acting as an oxygen scavenger, it did enhance the morphological stability of the NiSi films and thus improve their electrical properties.

  7. Mammalian CAP interacts with CAP, CAP2, and actin.

    Science.gov (United States)

    Hubberstey, A; Yu, G; Loewith, R; Lakusta, C; Young, D

    1996-06-01

    We previously identified human CAP, a homolog of the yeast adenylyl cyclase-associated protein. Previous studies suggest that the N-terminal and C-terminal domains of CAP have distinct functions. We have explored the interactions of human CAP with various proteins. First, by performing yeast two-hybrid screens, we have identified peptides from several proteins that interact with the C-terminal and/or the N-terminal domains of human CAP. These peptides include regions derived from CAP and BAT3, a protein with unknown function. We have further shown that MBP fusions with these peptides can associate in vitro with the N-terminal or C-terminal domains of CAP fused to GST. Our observations indicate that CAP contains regions in both the N-terminal and C-terminal domains that are capable of interacting with each other or with themselves. Furthermore, we found that myc-epitope-tagged CAP coimmunoprecipitates with HA-epitope-tagged CAP from either yeast or mammalian cell extracts. Similar results demonstrate that human CAP can also interact with human CAP2. We also show that human CAP interacts with actin, both by the yeast two-hybrid test and by coimmunoprecipitation of epitope-tagged CAP from yeast or mammalian cell extracts. This interaction requires the C-terminal domain of CAP, but not the N-terminal domain. Thus CAP appears to be capable of interacting in vivo with other CAP molecules, CAP2, and actin. We also show that actin co-immunoprecipitates with HA-CAP2 from mammalian cell extracts.

  8. Photovoltaic investigation of minority carrier lifetime in the heavily-doped emitter layer of silicon junction solar cell

    Science.gov (United States)

    Ho, C.-T.

    1982-01-01

    The results of experiments on the recombination lifetime in a phosphorus diffused N(+) layer of a silicon solar cell are reported. The cells studied comprised three groups of Czochralski grown crystals: boron doped to one ohm-cm, boron doped to 6 ohm-cm, and aluminum doped to one ohm-cm, all with a shunt resistance exceeding 500 kilo-ohms. The characteristic bulk diffusion length of a cell sample was determined from the short circuit current response to light at a wavelength of one micron. The recombination rates were obtained by measurement of the open circuit voltage as a function of the photogeneration rate. The recombination rate was found to be dependent on the photoinjection level, and is positive-field controlled at low photoinjection, positive-field influence Auger recombination at a medium photoinjection level, and negative-field controlled Auger recombination at a high photoinjection level.

  9. Tunneling-Magnetoresistance Ratio Comparison of MgO-Based Perpendicular-Magnetic-Tunneling-Junction Spin Valve Between Top and Bottom Co2Fe6B2 Free Layer Structure

    Science.gov (United States)

    Lee, Du-Yeong; Lee, Seung-Eun; Shim, Tae-Hun; Park, Jea-Gun

    2016-09-01

    For the perpendicular-magnetic-tunneling-junction (p-MTJ) spin valve with a nanoscale-thick bottom Co2Fe6B2 free layer ex situ annealed at 400 °C, which has been used as a common p-MTJ structure, the Pt atoms of the Pt buffer layer diffused into the MgO tunneling barrier. This transformed the MgO tunneling barrier from a body-centered cubic (b.c.c) crystallized layer into a mixture of b.c.c, face-centered cubic, and amorphous layers and rapidly decreased the tunneling-magnetoresistance (TMR) ratio. The p-MTJ spin valve with a nanoscale-thick top Co2Fe6B2 free layer could prevent the Pt atoms diffusing into the MgO tunneling barrier during ex situ annealing at 400 °C because of non-necessity of a Pt buffer layer, demonstrating the TMR ratio of ~143 %.

  10. High-Efficiency Silicon/Organic Heterojunction Solar Cells with Improved Junction Quality and Interface Passivation.

    Science.gov (United States)

    He, Jian; Gao, Pingqi; Ling, Zhaoheng; Ding, Li; Yang, Zhenhai; Ye, Jichun; Cui, Yi

    2016-12-27

    Silicon/organic heterojunction solar cells (HSCs) based on conjugated polymers, poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS), and n-type silicon (n-Si) have attracted wide attention due to their potential advantages of high efficiency and low cost. However, the state-of-the-art efficiencies are still far from satisfactory due to the inferior junction quality. Here, facile treatments were applied by pretreating the n-Si wafer in tetramethylammonium hydroxide (TMAH) solution and using a capping copper iodide (CuI) layer on the PEDOT:PSS layer to achieve a high-quality Schottky junction. Detailed photoelectric characteristics indicated that the surface recombination was greatly suppressed after TMAH pretreatment, which increased the thickness of the interfacial oxide layer. Furthermore, the CuI capping layer induced a strong inversion layer near the n-Si surface, resulting in an excellent field effect passivation. With the collaborative improvements in the interface chemical and electrical passivation, a competitive open-circuit voltage of 0.656 V and a high fill factor of 78.1% were achieved, leading to a stable efficiency of over 14.3% for the planar n-Si/PEDOT:PSS HSCs. Our findings suggest promising strategies to further exploit the full voltage as well as efficiency potentials for Si/organic solar cells.

  11. Four-Junction Solar Cell with 40% Target Efficiency Fabricated by Wafer Bonding and Layer Transfer: Final Technical Report, 1 January 2005 - 31 December 2007

    Energy Technology Data Exchange (ETDEWEB)

    Atwater, H. A.

    2008-11-01

    We realized high-quality InGaP/GaAs 2-junction top cells on Ge/Si, InGaAs/InP bottom cells, direct-bond series interconnection of tandem cells, and modeling of bonded 3- and 4-junction device performance.

  12. Gap Junctions

    Science.gov (United States)

    Nielsen, Morten Schak; Axelsen, Lene Nygaard; Sorgen, Paul L.; Verma, Vandana; Delmar, Mario; Holstein-Rathlou, Niels-Henrik

    2013-01-01

    Gap junctions are essential to the function of multicellular animals, which require a high degree of coordination between cells. In vertebrates, gap junctions comprise connexins and currently 21 connexins are known in humans. The functions of gap junctions are highly diverse and include exchange of metabolites and electrical signals between cells, as well as functions, which are apparently unrelated to intercellular communication. Given the diversity of gap junction physiology, regulation of gap junction activity is complex. The structure of the various connexins is known to some extent; and structural rearrangements and intramolecular interactions are important for regulation of channel function. Intercellular coupling is further regulated by the number and activity of channels present in gap junctional plaques. The number of connexins in cell-cell channels is regulated by controlling transcription, translation, trafficking, and degradation; and all of these processes are under strict control. Once in the membrane, channel activity is determined by the conductive properties of the connexin involved, which can be regulated by voltage and chemical gating, as well as a large number of posttranslational modifications. The aim of the present article is to review our current knowledge on the structure, regulation, function, and pharmacology of gap junctions. This will be supported by examples of how different connexins and their regulation act in concert to achieve appropriate physiological control, and how disturbances of connexin function can lead to disease. © 2012 American Physiological Society. Compr Physiol 2:1981-2035, 2012. PMID:23723031

  13. Gap junctions.

    Science.gov (United States)

    Nielsen, Morten Schak; Axelsen, Lene Nygaard; Sorgen, Paul L; Verma, Vandana; Delmar, Mario; Holstein-Rathlou, Niels-Henrik

    2012-07-01

    Gap junctions are essential to the function of multicellular animals, which require a high degree of coordination between cells. In vertebrates, gap junctions comprise connexins and currently 21 connexins are known in humans. The functions of gap junctions are highly diverse and include exchange of metabolites and electrical signals between cells, as well as functions, which are apparently unrelated to intercellular communication. Given the diversity of gap junction physiology, regulation of gap junction activity is complex. The structure of the various connexins is known to some extent; and structural rearrangements and intramolecular interactions are important for regulation of channel function. Intercellular coupling is further regulated by the number and activity of channels present in gap junctional plaques. The number of connexins in cell-cell channels is regulated by controlling transcription, translation, trafficking, and degradation; and all of these processes are under strict control. Once in the membrane, channel activity is determined by the conductive properties of the connexin involved, which can be regulated by voltage and chemical gating, as well as a large number of posttranslational modifications. The aim of the present article is to review our current knowledge on the structure, regulation, function, and pharmacology of gap junctions. This will be supported by examples of how different connexins and their regulation act in concert to achieve appropriate physiological control, and how disturbances of connexin function can lead to disease. © 2012 American Physiological Society. Compr Physiol 2:1853-1872, 2012.

  14. Simulation study of HEMT structures with HfO{sub 2} cap layer for mitigating inverse piezoelectric effect related device failures

    Energy Technology Data Exchange (ETDEWEB)

    Nagulapally, Deepthi; Joshi, Ravi P., E-mail: rjoshi@odu.edu [Department of Electrical and Computer Engineering, Old Dominion University, Norfolk, VA 23529-0246 (United States); Pradhan, Aswini [Department of Engineering and Center for Materials Research, Norfolk State University, 700 Park Avenue, Norfolk, VA 23504 (United States)

    2015-01-15

    The Inverse Piezoelectric Effect (IPE) is thought to contribute to possible device failure of GaN High Electron Mobility Transistors (HEMTs). Here we focus on a simulation study to probe the possible mitigation of the IPE by reducing the internal electric fields and related elastic energy through the use of high-k materials. Inclusion of a HfO{sub 2} “cap layer” above the AlGaN barrier particularly with a partial mesa structure is shown to have potential advantages. Simulations reveal even greater reductions in the internal electric fields by using “field plates” in concert with high-k oxides.

  15. Saltstone Clean Cap Formulation

    Energy Technology Data Exchange (ETDEWEB)

    Langton, C

    2005-04-22

    The current operation strategy for using Saltstone Vault 4 to receive 0.2 Ci/gallon salt solution waste involves pouring a clean grout layer over the radioactive grout prior to initiating pour into another cell. This will minimize the radiating surface area and reduce the dose rate at the vault and surrounding area. The Clean Cap will be used to shield about four feet of Saltstone poured into a Z-Area vault cell prior to moving to another cell. The minimum thickness of the Clean Cap layer will be determined by the cesium concentration and resulting dose levels and it is expected to be about one foot thick based on current calculations for 0.1 Ci Saltstone that is produced in the Saltstone process by stabilization of 0.2 Ci salt solution. This report documents experiments performed to identify a formulation for the Clean Cap. Thermal transient calculations, adiabatic temperature rise measurements, pour height, time between pour calculations and shielding calculations were beyond the scope and time limitations of this study. However, data required for shielding calculations (composition and specific gravity) are provided for shielding calculations. The approach used to design a Clean Cap formulation was to produce a slurry from the reference premix (10/45/45 weight percent cement/slag/fly ash) and domestic water that resembled as closely as possible the properties of the Saltstone slurry. In addition, options were investigated that may offer advantages such as less bleed water and less heat generation. The options with less bleed water required addition of dispersants. The options with lower heat contained more fly ash and less slag. A mix containing 10/45/45 weight percent cement/slag/fly ash with a water to premix ratio of 0.60 is recommended for the Clean Cap. Although this mix may generate more than 3 volume percent standing water (bleed water), it has rheological, mixing and flow properties that are similar to previously processed Saltstone. The recommended

  16. Fabrication of high quality ferromagnetic Josephson junctions

    Energy Technology Data Exchange (ETDEWEB)

    Weides, M. [Institute for Solid State Research, Research Centre Juelich, D-52425 Juelich (Germany) and CNI-Center of Nanoelectronic Systems for Information Technology, Research Centre Juelich, D-52425 Juelich (Germany)]. E-mail: m.weides@fz-juelich.de; Tillmann, K. [Institute for Solid State Research, Research Centre Juelich, D-52425 Juelich (Germany); Ernst Ruska-Centre for Microscopy and Spectroscopy with Electrons, Research Centre Juelich, D-52425 Juelich (Germany); Kohlstedt, H. [Institute for Solid State Research, Research Centre Juelich, D-52425 Juelich (Germany); CNI-Center of Nanoelectronic Systems for Information Technology, Research Centre Juelich, D-52425 Juelich (Germany); Department of Material Science and Engineering and Department of Physics, University of Berkeley, CA 94720 (United States)

    2006-05-15

    We present ferromagnetic Nb/Al{sub 2}O{sub 3}/Ni{sub 60}Cu{sub 40}/Nb Josephson junctions (SIFS) with an ultrathin Al{sub 2}O{sub 3} tunnel barrier. The junction fabrication was optimized regarding junction insulation and homogeneity of current transport. Using ion-beam-etching and anodic oxidation we defined and insulated the junction mesas. The additional 2 nm thin Cu-layer below the ferromagnetic NiCu (SINFS) lowered interface roughness and ensured very homogeneous current transport. A high yield of junctional devices with j {sub c} spreads less than 2% was obtained.

  17. An all-perovskite p-n junction based on transparent conducting p -La 1-x Sr x CrO 3 epitaxial layers

    Energy Technology Data Exchange (ETDEWEB)

    Du, Yingge; Li, Chen; Zhang, Kelvin H. L.; McBriarty, Martin E.; Spurgeon, Steven R.; Mehta, Hardeep S.; Wu, Di; Chambers, Scott A.

    2017-08-07

    Transparent, conducting p -La 1-x Sr x CrO 3 epitaxial layers were deposited on Nb-doped SrTiO3(001) by oxygen-assisted molecular beam epitaxy to form structurally coherent p-n junctions. X-ray photoelectron spectroscopy reveals a type II or “staggered” band alignment, with valence and conduction band offsets of 2.0 eV and 0.9 eV, respectively. Diodes fabricated from these heterojunctions exhibit rectifying behavior, and the I-V characteristics are different from those for traditional semiconductor p-n junctions. A rather large ideality factor is ascribed to the complex nature of the interface.

  18. Effect of Sb and As spray on emission characteristics of InAs quantum dots with AlAs capping layer

    Science.gov (United States)

    Zhang, Z.; Tan, S.; Kim, Y.; Liu, Z.; Reece, P. J.; Bremner, S. P.

    2017-10-01

    We report on the influence of an Sb/As combined spray on the physical and optical characteristics of AlAs-capped InAs/GaAs quantum dots grown by Molecular Beam Epitaxy. Photoluminescence emission from the quantum dots shows a significant peak position shift under different Sb/As spray sequences. A blue-shifted quantum dot emission peak with an initial Sb rest indicates a large-to-small quantum dots transition process, with a bi-modal quantum dot size distribution inferred. High-resolution Transmission Electron Microscopy results reveal a large density of small quantum dots when the Sb spray is treated first. Furthermore, defect passivation in the vicinity of the quantum dots by use of Sb spray was detected.

  19. Effect of an interface Mg insertion layer on the reliability of a magnetic tunnel junction based on a Co{sub 2}FeAl full-Heusler alloy

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Jungmin; Kil, Gyuhyun; Lee, Gaehun; Choi, Chulmin; Song, Yunheub [Hanyang University, Seoul (Korea, Republic of); Sukegawa, Hiroaki; Mitani, Seiji [National Institute for Materials Science, Ibaraki (Japan)

    2014-04-15

    The reliability of a magnetic tunnel junction (MTJ) based on a Co{sub 2}FeAl (CFA) full-Heusler alloy with a MgO tunnel barrier was evaluated. In particular, the effect of a Mg insertion layer under the MgO was investigated in view of resistance drift by using various voltage stress tests. We compared the resistance change during constant voltage stress (CVS) and confirmed a trap/detrap phenomenon during the interval stress test for samples with and without a Mg insertion layer. The MTJ with a Mg insertion layer showed a relatively small resistance change for the CVS test and a reduced trap/detrap phenomenon for the interval stress test compared to the sample without a Mg insertion layer. This is understood to be caused by the improved crystallinity at the bottom of the CFA/MgO interface due to the Mg insertion layer, which provides a smaller number of trap site during the stress test. As a result, the interface condition of the MgO layer is very important for the reliability of a MTJ using a full-Heusler alloy, and the the insert of a Mg layer at the MgO interface is expected to be an effective method for enhancing the reliability of a MTJ.

  20. Doped semiconductor nanocrystal junctions

    Energy Technology Data Exchange (ETDEWEB)

    Borowik, Ł.; Mélin, T., E-mail: thierry.melin@isen.iemn.univ-lille1.fr [Institut d’Electronique, de Microélectronique et de Nanotechnologie, CNRS-UMR8520, Avenue Poincaré, F-59652 Villeneuve d’Ascq (France); Nguyen-Tran, T.; Roca i Cabarrocas, P. [Laboratoire de Physique des Interfaces et des Couches Minces, CNRS-UMR7647, Ecole Polytechnique, F-91128 Palaiseau (France)

    2013-11-28

    Semiconductor junctions are the basis of electronic and photovoltaic devices. Here, we investigate junctions formed from highly doped (N{sub D}≈10{sup 20}−10{sup 21}cm{sup −3}) silicon nanocrystals (NCs) in the 2–50 nm size range, using Kelvin probe force microscopy experiments with single charge sensitivity. We show that the charge transfer from doped NCs towards a two-dimensional layer experimentally follows a simple phenomenological law, corresponding to formation of an interface dipole linearly increasing with the NC diameter. This feature leads to analytically predictable junction properties down to quantum size regimes: NC depletion width independent of the NC size and varying as N{sub D}{sup −1/3}, and depleted charge linearly increasing with the NC diameter and varying as N{sub D}{sup 1/3}. We thus establish a “nanocrystal counterpart” of conventional semiconductor planar junctions, here however valid in regimes of strong electrostatic and quantum confinements.

  1. Impacts of light illumination on monocrystalline silicon surfaces passivated by atomic layer deposited Al2O3 capped with plasma-enhanced chemical vapor deposited SiN x

    Science.gov (United States)

    Lin, Fen; Toh, Mei Gi; Thway, Maung; Li, Xinhang; Nandakumar, Naomi; Gay, Xavier; Dielissen, Bas; Raj, Samuel; Aberle, Armin G.

    2017-08-01

    In this work, we investigate the impact of light illumination on crystalline silicon surfaces passivated with inline atomic layer deposited aluminum oxide capped with plasma-enhanced chemical vapor deposited silicon nitride. It is found that, for dedicated n-type lifetime samples under illumination, there is no light induced degradation (LID) but enhanced passivation. The lifetime increase happened with a much faster speed compared to the lifetime decay during dark storage, resulting in the overall lifetime enhancement for actual field application scenarios (sunshine during the day and darkness during the night). In addition, it was found that the lifetime enhancement is spectrally dependent and mainly associated with the visible part of the solar spectrum. Hence, it has negligible impact for such interfaces applied on the rear of the solar cells, for example p-type aluminum local back surface field (Al-LBSF) cells.

  2. Rapid Thermal Annealing Effects on Structural and Optical Properties of Self-Assembled InAs/GaAs Quantum Dots Capped by InAlAs/InGaAs Layers

    Institute of Scientific and Technical Information of China (English)

    L(U) Wei; LI Da-Bing; ZHANG Zi-Yang; LI Chao-Rong; ZHANG Ze; XU Bo; WANG Zhan-Gum

    2005-01-01

    @@ Effects of rapid thermal annealing on the optical and structural properties of self-assembled InAs/GaAs quantum dots capped by the InAlAs/InGaAs combination layers are studied by photoluminescence and transmission electron microscopy.The photoluminescence measurement shows that the photoluminescence peak of the sample after 850℃ rapid thermal annealing is blue shifted with 370meV and the excitation peak intensity increases by a factor of about 2.7 after the rapid thermal annealing, which indicates that the InAs quantum dots have experienced an abnormal transformation during the annealing.The transmission electron microscopy shows that the quantum dots disappear and a new InAlGaAs single quantum well structure forms after the rapid thermal annealing treatment.The transformation mechanism is discussed.These abnormal optical properties are attributed to the structural transformation of these quantum dots into a single quantum well.

  3. Peltier cooling stage utilizing a superconductor-semiconductor junction

    Energy Technology Data Exchange (ETDEWEB)

    Skertic, M.M.

    1991-04-09

    This paper describes a Peltier cooling stack. It comprises: a first electrode; a superconducting layer electrically coupled to the first electrode; a semiconducting layer electrically coupled to the superconducting layer; and a second superconducting layer electrically coupled to the semiconductor layer; and a second electrode electrically coupled to the second superconducting layer, electrons flowing under an applied voltage from the first electrode through the first superconducting layer, semiconductor layer, second superconducting layer and second electrode, the electrical junction between the first superconducting layer and semiconductor providing Peltier cooling while the electrical junction between the semiconductor layer and the second superconducting layer providing Peltier heating, whereby a cryogenic Peltier cooling stack is provided.

  4. Metallic Junction Thermoelectric Device Simulations

    Science.gov (United States)

    Duzik, Adam J.; Choi, Sang H.

    2017-01-01

    Thermoelectric junctions made of semiconductors have existed in radioisotope thermoelectric generators (RTG) for deep space missions, but are currently being adapted for terrestrial energy harvesting. Unfortunately, these devices are inefficient, operating at only 7% efficiency. This low efficiency has driven efforts to make high-figure-of-merit thermoelectric devices, which require a high electrical conductivity but a low thermal conductivity, a combination that is difficult to achieve. Lowered thermal conductivity has increased efficiency, but at the cost of power output. An alternative setup is to use metallic junctions rather than semiconductors as thermoelectric devices. Metals have orders of magnitude more electrons and electronic conductivities higher than semiconductors, but thermal conductivity is higher as well. To evaluate the viability of metallic junction thermoelectrics, a two dimensional heat transfer MATLAB simulation was constructed to calculate efficiency and power output. High Seebeck coefficient alloys, Chromel (90%Ni-10%Cr) and Constantan (55%Cu-45%Ni), produced efficiencies of around 20-30%. Parameters such as the number of layers of junctions, lateral junction density, and junction sizes for both series- and parallel-connected junctions were explored.

  5. The cervical cap (image)

    Science.gov (United States)

    The cervical cap is a flexible rubber cup-like device that is filled with spermicide and self-inserted over the cervix ... left in place several hours after intercourse. The cap is a prescribed device fitted by a health ...

  6. Chaos induced by coupling between Josephson junctions

    Science.gov (United States)

    Shukrinov, Yu. M.; Azemtsa-Donfack, H.; Botha, A. E.

    2015-02-01

    It is found that, in a stack of intrinsic Josephson junctions in layered high temperature superconductors under external electromagnetic radiation, the chaotic features are triggered by interjunction coupling, i.e., the coupling between different junctions in the stack. While the radiation is well known to produce chaotic effects in the single junction, the effect of interjunction coupling is fundamentally different and it can lead to the onset of chaos via a different route to that of the single junction. A precise numerical study of the phase dynamics of intrinsic Josephson junctions, as described by the CCJJ+DC model, is performed. We demonstrate the charging of superconducting layers, in a bias current interval corresponding to a Shapiro step subharmonic, due to the creation of a longitudinal plasma wave along the stack of junctions. With increase in radiation amplitude chaotic behavior sets in. The chaotic features of the coupled Josephson junctions are analyzed by calculations of the Lyapunov exponents. We compare results for a stack of junctions to the case of a single junction and prove that the observed chaos is induced by the coupling between the junctions. The use of Shapiro step subharmonics may allow longitudinal plasma waves to be excited at low radiation power.

  7. Oxidation resistance and microstructure of Ru-capped extreme ultraviolet lithography multilayers

    Energy Technology Data Exchange (ETDEWEB)

    Bajt, S; Dai, Z; Nelson, E J; Wall, M A; Alameda, J B; Nguyen, N; Baker, S L; Robinson, J C; Taylor, J S; Aquila, A; Edwards, N V

    2005-06-15

    The oxidation resistance of protective capping layers for extreme ultraviolet lithography (EUVL) multilayers depends on their microstructure. Differently prepared Ru-capping layers, deposited on Mo/Si EUVL multilayers, were investigated to establish their baseline structural, optical, and surface properties in as-deposited state. The same capping layer structures were then tested for their thermal stability and oxidation resistance. The best performing Ru-capping layer structure was analyzed in detail with transmission electron microscopy (TEM). As compared to other Ru capping layers preparations studied here it is the only one that shows grains with preferential orientation. This information is essential for modeling and performance optimization of EUVL multilayers.

  8. Polar Cap Patch Dynamics

    Science.gov (United States)

    2013-04-25

    cap arcs Citation: Hosokawa, K., J. I. Moen, K. Shiokawa, and Y. Otsuka ( 2011 ), Motion of polar cap arcs , J. Geophys. Res. , 116 , A01305, doi...K., J. I. Moen, K. Shiokawa, and Y. Otsuka , (2011), Decay of polar cap patch, J. Geophys. Res., 116, A05308, doi:10.1029/2010JA016287, Abstract. We

  9. Cradle Cap: Treatment

    Science.gov (United States)

    Cradle cap Treatment Cradle cap usually doesn't require medical treatment. It clears up on its own within a few months. In the meantime, wash ... tips can help you control and manage cradle cap. Gently rub your baby's scalp with your fingers ...

  10. Co2Fe6B2/MgO-based perpendicular spin-transfer-torque magnetic-tunnel-junction spin-valve without [Co/Pt] n lower synthetic-antiferromagnetic layer.

    Science.gov (United States)

    Lee, Seung-Eun; Shim, Tae-Hun; Park, Jea-Gun

    2015-11-27

    We design a Co2Fe6B2/MgO-based p-MTJ spin-valve without a [Co/Pt] n lower synthetic-antiferromagnetic (SyAF) layer to greatly reduce the 12-inch wafer fabrication cost of the p-MTJ spin-valve. This spin-valve achieve a tunneling magnetoresistance (TMR) of 158% and an exchange field (H ex) of 1.4 kOe at an ex situ annealing temperature of >350 °C, which ensures writing error immunity. In particular, the TMR ratio strongly depends on the body-center-cubic capping-layer nanoscale thickness (t bcc), i.e., the TMR ratio peaks at t bcc = 0.6 nm.

  11. Oscillatory behavior of the tunnel magnetoresistance due to thickness variations in Ta|CoFe|MgO magnetic tunnel junctions: A first-principles study

    Science.gov (United States)

    Sankaran, K.; Swerts, J.; Couet, S.; Stokbro, K.; Pourtois, G.

    2016-09-01

    To investigate the impact of both the CoFe ferromagnetic layer thickness and the capping paramagnetic layer on the tunnel magnetoresistance (TMR), we performed first-principles simulations on epitaxial magnetic tunnel junctions contacted with either CoFe or Ta paramagnetic capping layers. We observed a strong oscillation of the TMR amplitude with respect to the thickness of the ferromagnetic layer. The TMR is found to be amplified whenever the MgO spin tunnel barrier is thickened. Quantization of the electronic structure of the ferromagnetic layers is found to be at the origin of this oscillatory behavior. Metals such as Ta contacting the magnetic layer are found to enhance the amplitude of the oscillations due to the occurrence of an interface dipole. The latter drives the band alignment and tunes the nature of the spin channels that are active during the tunneling process. Subsequently, the regular transmission spin channels are modulated in the magnetic tunnel junction stack and other complex ones are being activated.

  12. TLC-SERS Plates with a Built-In SERS Layer Consisting of Cap-Shaped Noble Metal Nanoparticles Intended for Environmental Monitoring and Food Safety Assurance

    Directory of Open Access Journals (Sweden)

    H. Takei

    2015-01-01

    Full Text Available We report on a thin layer chromatograph (TLC with a built-in surface enhanced Raman scattering (SERS layer for in-situ identification of chemical species separated by TLC. Our goal is to monitor mixture samples or diluted target molecules suspended in a host material, as happens often in environmental monitoring or detection of food additives. We demonstrate that the TLC-SERS can separate mixture samples and provide in-situ SERS spectra. One sample investigated was a mixture consisting of equal portions of Raman-active chemical species, rhodamine 6 G (R6G, crystal violet (CV, and 1,2-di(4-pyridylethylene (BPE. The three components could be separated and their SERS spectra were obtained from different locations. Another sample was skim milk with a trace amount of melamine. Without development, no characteristic peaks were observed, but after development, a peak was observed at 694 cm−1. Unlike previous TLC-SERS whereby noble metal nanoparticles are added after development of a sample, having a built-in SERS layer greatly facilitates analysis as well as maintaining high uniformity of noble metal nanoparticles.

  13. Dependency of anti-ferro-magnetic coupling strength on Ru spacer thickness of [Co/Pd]{sub n}-synthetic-anti-ferro-magnetic layer in perpendicular magnetic-tunnel-junctions fabricated on 12-inch TiN electrode wafer

    Energy Technology Data Exchange (ETDEWEB)

    Chae, Kyo-Suk [MRAM Center, Department of Electronics, Hanyang University, Seoul 133-791 (Korea, Republic of); Samsung Electronics Co., Ltd., San #16 Banwol-dong, Hwasung-City, Gyeonggi-Do 445-701 (Korea, Republic of); Shim, Tae-Hun; Park, Jea-Gun, E-mail: parkjgL@hanyang.ac.kr [MRAM Center, Department of Electronics, Hanyang University, Seoul 133-791 (Korea, Republic of)

    2014-07-21

    We investigated the Ru spacer-thickness effect on the anti-ferro-magnetic coupling strength (J{sub ex}) of a [Co/Pd]{sub n}-synthetic-anti-ferro-magnetic layer fabricated with Co{sub 2}Fe{sub 6}B{sub 2}/MgO based perpendicular-magnetic-tunneling-junction spin-valves on 12-in. TiN electrode wafers. J{sub ex} peaked at a certain Ru spacer-thickness: specifically, a J{sub ex} of 0.78 erg/cm{sup 2} at 0.6 nm, satisfying the J{sub ex} criteria for realizing the mass production of terra-bit-level perpendicular-spin-transfer-torque magnetic-random-access-memory. Otherwise, J{sub ex} rapidly degraded when the Ru spacer-thickness was less than or higher than 0.6 nm. As a result, the allowable Ru thickness variation should be controlled less than 0.12 nm to satisfy the J{sub ex} criteria. However, the Ru spacer-thickness did not influence the tunneling-magneto-resistance (TMR) and resistance-area (RA) of the perpendicular-magnetic-tunneling-junction (p-MTJ) spin-valves since the Ru spacer in the synthetic-anti-ferro-magnetic layer mainly affects the anti-ferro-magnetic coupling efficiency rather than the crystalline linearity of the Co{sub 2}Fe{sub 6}B{sub 2} free layer/MgO tunneling barrier/Co{sub 2}Fe{sub 6}B{sub 2} pinned layer, although Co{sub 2}Fe{sub 6}B{sub 2}/MgO based p-MTJ spin-valves ex-situ annealed at 275 °C achieved a TMR of ∼70% at a RA of ∼20 Ω μm{sup 2}.

  14. Dependency of tunneling magneto-resistance on Fe insertion-layer thickness in Co{sub 2}Fe{sub 6}B{sub 2}/MgO-based magnetic tunneling junctions

    Energy Technology Data Exchange (ETDEWEB)

    Chae, Kyo-Suk [MRAM Center, Department of Electronics and Computer Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of); Samsung Electronics Co., Ltd., San #16 Banwol-dong, Hwasung-City, Gyeonggi-Do 445-701 (Korea, Republic of); Park, Jea-Gun, E-mail: parkjgL@hanyang.ac.kr [MRAM Center, Department of Electronics and Computer Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of)

    2015-04-21

    For Co{sub 2}Fe{sub 6}B{sub 2}/MgO-based perpendicular magnetic tunneling junctions spin valves with [Co/Pd]{sub n}-synthetic-antiferromagnetic (SyAF) layers, the tunneling-magneto-resistance (TMR) ratio strongly depends on the nanoscale Fe insertion-layer thickness (t{sub Fe}) between the Co{sub 2}Fe{sub 6}B{sub 2} pinned layer and MgO tunneling barrier. The TMR ratio rapidly increased as t{sub Fe} increased up to 0.4 nm by improving the crystalline linearity of a MgO tunneling barrier and by suppressing the diffusion of Pd atoms from a [Co/Pd]{sub n}-SyAF. However, it abruptly decreased by further increasing t{sub Fe} in transferring interfacial-perpendicular magnetic anisotropy into the IMA characteristic of the Co{sub 2}Fe{sub 6}B{sub 2} pinned layer. Thus, the TMR ratio peaked at t{sub Fe} = 0.4 nm: i.e., 120% at 29 Ωμm{sup 2}.

  15. Cap-Induced Magnetic Anisotropy in Ultra-thin Fe/MgO(001) Films

    Science.gov (United States)

    Brown-Heft, Tobias; Pendharkar, Mihir; Lee, Elizabeth; Palmstrom, Chris

    Magnetic anisotropy plays an important role in the design of spintronic devices. Perpendicular magnetic anisotropy (PMA) is preferred for magnetic tunnel junctions because the resulting energy barrier between magnetization states can be very high and this allows enhanced device scalability suitable for magnetic random access memory applications. Interface induced anisotropy is often used to control magnetic easy axes. For example, the Fe/MgO(001) system has been predicted to exhibit PMA in the ultrathin Fe limit. We have used in-situ magneto optic Kerr effect and ex-situ SQUID to study the changes in anisotropy constants between bare Fe/MgO(001) films and those capped with MgO, Pt, and Ta. In some cases in-plane anisotropy terms reverse sign after capping. We also observe transitions from superparamagnetic to ferromagnetic behavior induced by capping layers. Perpendicular anisotropy is observed for Pt/Fe/MgO(001) films after annealing to 300°C. These effects are characterized and incorporated into a magnetic simulation that accurately reproduces the behavior of the films. This work was supported in part by the Semiconductor Research Corporation programs (1) MSR-Intel, and (2) C-SPIN.

  16. Josephson junctions with ferromagnetic interlayer

    Energy Technology Data Exchange (ETDEWEB)

    Wild, Georg Hermann

    2012-03-04

    We report on the fabrication of superconductor/insulator/ferromagnetic metal/superconductor (Nb/AlO{sub x}/Pd{sub 0.82}Ni{sub 0.18}/Nb) Josephson junctions (SIFS JJs) with high critical current densities, large normal resistance times area products, and high quality factors. For these junctions, a transition from 0- to {pi}-coupling is observed for a thickness d{sub F}=6 nm of the ferromagnetic Pd{sub 0.82}Ni{sub 0.18} interlayer. The magnetic field dependence of the critical current of the junctions demonstrates good spatial homogeneity of the tunneling barrier and ferromagnetic interlayer. Magnetic characterization shows that the Pd{sub 0.82}Ni{sub 0.18} has an out-of-plane anisotropy and large saturation magnetization indicating negligible dead layers at the interfaces. A careful analysis of Fiske modes up to about 400 GHz provides valuable information on the junction quality factor and the relevant damping mechanisms. Whereas losses due to quasiparticle tunneling dominate at low frequencies, at high frequencies the damping is explained by the finite surface resistance of the junction electrodes. High quality factors of up to 30 around 200 GHz have been achieved. They allow to study the junction dynamics, in particular the switching probability from the zero-voltage into the voltage state with and without microwave irradiation. The experiments with microwave irradiation are well explained within semi-classical models and numerical simulations. In contrast, at mK temperature the switching dynamics without applied microwaves clearly shows secondary quantum effects. Here, we could observe for the first time macroscopic quantum tunneling in Josephson junctions with a ferromagnetic interlayer. This observation excludes fluctuations of the critical current as a consequence of an unstable magnetic domain structure of the ferromagnetic interlayer and affirms the suitability of SIFS Josephson junctions for quantum information processing.

  17. Common features of a vortex structure in long exponentially shaped Josephson junctions and Josephson junctions with inhomogeneities

    Science.gov (United States)

    Boyadjiev, T. L.; Semerdjieva, E. G.; Shukrinov, Yu. M.

    2007-09-01

    We study the vortex structure in three different models of the long Josephson junction: the exponentially shaped Josephson junction and the Josephson junctions with the resistor and the shunt inhomogeneities in the barrier layer. For these three models the critical curves “critical current-magnetic field” are numerically constructed. We develop the idea of the equivalence of the exponentially shaped Josephson junction and the rectangular junction with the distributed inhomogeneity and demonstrate that at some parameters of the shunt and the resistor inhomogeneities in the ends of the junction the corresponding critical curves are very close to the exponentially shaped one.

  18. Common features of a vortex structure in long exponentially shaped Josephson junctions and Josephson junctions with inhomogeneities

    Energy Technology Data Exchange (ETDEWEB)

    Boyadjiev, T.L. [Joint Institute for Nuclear Research, 141980 Dubna (Russian Federation); Semerdjieva, E.G. [Plovdiv University, 24 Tzar Asen Str., Plovdiv 4000 (Bulgaria); Shukrinov, Yu.M. [Joint Institute for Nuclear Research, 141980 Dubna (Russian Federation)], E-mail: shukrinv@theor.jinr.ru

    2007-09-01

    We study the vortex structure in three different models of the long Josephson junction: the exponentially shaped Josephson junction and the Josephson junctions with the resistor and the shunt inhomogeneities in the barrier layer. For these three models the critical curves 'critical current-magnetic field' are numerically constructed. We develop the idea of the equivalence of the exponentially shaped Josephson junction and the rectangular junction with the distributed inhomogeneity and demonstrate that at some parameters of the shunt and the resistor inhomogeneities in the ends of the junction the corresponding critical curves are very close to the exponentially shaped one.

  19. Coordinate transformation in the model of long Josephson junctions: geometrically equivalent Josephson junctions

    Science.gov (United States)

    Semerdzhieva, E. G.; Boyadzhiev, T. L.; Shukrinov, Yu. M.

    2005-10-01

    The transition from the model of a long Josephson junction of variable width to the model of a junction with a coordinate-dependent Josephson current amplitude is effected through a coordinate transformation. This establishes the correspondence between the classes of Josephson junctions of variable width and quasi-one-dimensional junctions with a variable thickness of the barrier layer. It is shown that for a junction of exponentially varying width the barrier layer of the equivalent quasi-one-dimensional junction has a distributed resistive inhomogeneity that acts as an attractor for magnetic flux vortices. The curve of the critical current versus magnetic field for a Josephson junction with a resistive microinhomogeneity is constructed with the aid of a numerical simulation, and a comparison is made with the critical curve of a junction of exponentially varying width. The possibility of replacing a distributed inhomogeneity in a Josephson junction by a local inhomogeneity at the end of the junction is thereby demonstrated; this can have certain advantages from a technological point of view.

  20. Dependency of tunneling magnetoresistance ratio on Pt seed-layer thickness for double MgO perpendicular magnetic tunneling junction spin-valves with a top Co2Fe6B2 free layer ex-situ annealed at 400 °C

    Science.gov (United States)

    Takemura, Yasutaka; Lee, Du-Yeong; Lee, Seung-Eun; Park, Jea-Gun

    2016-12-01

    For the double MgO based perpendicular magnetic tunneling junction (p-MTJ) spin-valves with a top Co2Fe6B2 free layer ex situ annealed at 400 °C, the tunneling-magnetoresistance ratio (TMR) strongly depended on the platinum (Pt) seed layer thickness (t Pt): it peaked (˜134%) at a specific t Pt (3.3 nm). The TMR ratio was initially and slightly increased from 113%-134% by the enhancement of the magnetic moment of the Co2Fe6B2 pinned layer when t Pt increased from 2.0-3.3 nm, and then rapidly decreased from 134%-38.6% by the degrading face-centered-cubic crystallinity of the MgO tunneling barrier when t Pt increased from 3.3-14.3 nm.

  1. Surface structure of CdS layer at the interface of CdS-SnO2 junction and the diagram of surface states

    Science.gov (United States)

    Caraman, I.; Lazar, I.; Caraman, M.; Rusu, D.

    2009-01-01

    The SnO2-CdS type structures with SnO2 film deposited by thermal pirolize in SnCl4-etanol solution were obtained. The CdS film with submicron thickness was obtained in cvasiclosed volume. The transversal section of the SnO2-CdS junction as well as the outer surface of the CdS film was analyzed using the electronic microscope. The density of the crystallization germs in the CdS film was about 1013cm-2. The luminescence spectrum of CdS has been examined. The existence of exciton line (n=1) in reflection and emission spectrum serves as a criteria of crystalline perfection of surface film.

  2. Quantum transport modeling of the symmetric Fe/FeO0.5/MgO magnetic tunnel junction: the effects of correlations in the buffer layer.

    Science.gov (United States)

    Timoshevskii, Vladimir; Hu, Yibin; Marcotte, Étienne; Guo, Hong

    2014-01-08

    We report ab initio simulations of quantum transport properties of Fe/MgO/Fe trilayer structures with FeO0.5 buffer iron oxide layer, where on-site Coulomb interaction is explicitly taken into account by local density approximation + Hubbard U approach. We show that on-site Coulomb repulsion in the iron-oxygen layer can cause a dramatic drop of the tunnel magnetoresistance of the system. We present an understanding of microscopic details of this phenomenon, connecting it to localization of electronic states of particular symmetry, which takes place in the buffer Fe-O layer, when on-site Coulomb repulsion is introduced. We further study the possible influence of the symmetry reduction in the buffer Fe-O layer on the transport properties of the Fe/MgO/Fe interface.

  3. Synthesis of Leishmania cap-4 intermediates, cap-2 and cap-3.

    Science.gov (United States)

    Lewdorowicz, Magdalena; Stepinski, Janusz; Kierzek, Ryszard; Jemielity, Jacek; Zuberek, Joanna; Yoffe, Yael; Shapira, Michal; Stolarski, Ryszard; Darzynkiewicz, Edward

    2007-01-01

    Synthesis of Leishmania mRNA 5'-cap analogs, m(7)Gpppm(2)(6)AmpAm (cap-2), and m(7)Gpppm(2)(6)AmpAmpCm (cap-3) is reported. Binding affinities of those cap analogs for LeishIF4E proteins were determined using fluorescence spectroscopy. Cap-3 showed similar affinity to LeishIF4Es compared to the mature trypanosomatids cap structure (cap-4).

  4. A high-sensitive ultraviolet photodetector composed of double-layered TiO{sub 2} nanostructure and Au nanoparticles film based on Schottky junction

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Huan; Qin, Pei [School of Chemical Engineering and Light Industry, Guangdong University of Technology, Guangzhou, 510006 (China); Yi, Guobin, E-mail: ygb702@163.com [School of Chemical Engineering and Light Industry, Guangdong University of Technology, Guangzhou, 510006 (China); Zu, Xihong [School of Chemical Engineering and Light Industry, Guangdong University of Technology, Guangzhou, 510006 (China); Zhang, Li, E-mail: zhangli2368@126.com [School of Materials and Energy, Guangdong University of Technology, Guangzhou, 510006 (China); Hong, Wei; Chen, Xudong [School of Chemistry and Chemical Engineering, Sun Yat-Sen (Zhongshan) University, Guangzhou, 510275 (China)

    2017-06-15

    In this study, a Schottky-type ultraviolet (UV) photodetector based on double-layered nanostructured TiO{sub 2}/Au films was fabricated. Double-layered titanium dioxide (TiO{sub 2}) nanostructures composed of one layer of TiO{sub 2} nano-flowers on one layer of TiO{sub 2} nanorods on fluorine-doped tin oxide (FTO) pre-coated glass substrates were synthesized via a convenient hydrothermal method using titanium butoxide and hydrochloric acid as the starting precursor, without involving the use of any other surfactants and catalysts. A granular-shaped thin-layer of Au film using vacuum sputter coating technique was subsequently deposited on TiO{sub 2} for the formation of Schottky-type photodetector. The as-fabricated Schottky device showed various photocurrent responses when irradiated with different wavelength of UV light. This suggests that the newly-developed photodetectors have promising potential for identifying different UV light wavelengths. - Highlights: • A novel double-layered TiO{sub 2} nanostructure was synthesized by a simple method. • An UV photodetector composed of TiO{sub 2} and Au was designed and fabricated. • The preparation method of TiO{sub 2}/Au UV photodetector was simple and convenient. • The UV photodetector based on TiO{sub 2}/Au showed excellent sensitivity to UV light.

  5. The study of origin of interfacial perpendicular magnetic anisotropy in ultra-thin CoFeB layer on the top of MgO based magnetic tunnel junction

    Science.gov (United States)

    Li, Zhi-Peng; Li, Shaoping; Zheng, Yuankai; Fang, Jason; Chen, Lifan; Hong, Liang; Wang, Haifeng

    2016-10-01

    A comprehensive microstructure study has been conducted experimentally for identifying the origin or mechanism of perpendicular magnetic anisotropy (PMA) in the ultra-thin (10 Å) CoFeB layer on the top of magnetic tunnel junction (MTJ). The high resolution transmission electron microscopy reveals that the feature of crystal structure in 10 Å-CoFeB layer is localized in nature at the CoFeB-MgO interface. On the other hand, the strain-relaxed crystalline structure is observed in the thick CoFeB (20 Å) layer at the CoFeB-MgO interface, associated with a series of dislocation formations. The electron energy loss spectroscopy further suggests that the local chemical stoichiometry of the ultra-thin 10 Å-CoFeB layer is notably changed at the CoFeB-MgO interface, compared with an atomic stoichiometry in a thick 20 Å-CoFeB layer. The origin of PMA mechanism is therefore identified experimentally as an interface effect, which can be attributed to a change of local atom bonding or lattice constant of the transition metal at the CoFeB-MgO based MTJ interface. Furthermore, such a local interfacial atom bonding change is seemly induced by the localized anisotropic strain and consistent with previous theoretical speculations and calculations. The observed experimental findings provide some perspective on microstructure and chemistry on PMA in ultra-thin CoFeB film at the MTJ interface, then deepening our understanding of the mechanism of PMA within MTJ stack and thus facilitating advancement for emerging spintronics technology.

  6. Oxidation resistance of Ru-capped EUV multilayers

    Energy Technology Data Exchange (ETDEWEB)

    Bajt, S; Dai, Z; Nelson, E J; Wall, M A; Alameda, J; Nguyen, N; Baker, S; Robinson, J C; Taylor, J S; Clift, M; Aquila, A; Gullikson, E M; Edwards, N G

    2005-02-23

    Differently prepared Ru-capping layers, deposited on Mo/Si EUV multilayers, have been characterized using a suite of metrologies to establish their baseline structural, optical, and surface properties in as-deposited state. Same capping layer structures were tested for their thermal stability and oxidation resistance. Post-mortem characterization identified changes due to accelerated tests. The best performing Ru-capping layer structure was studied in detail with transmission electron microscopy to identify the grain microstructure and texture. This information is essential for modeling and performance optimization of EUVL multilayers.

  7. Large Voltage-Induced Changes in the Perpendicular Magnetic Anisotropy of an MgO-Based Tunnel Junction with an Ultrathin Fe Layer

    Science.gov (United States)

    Nozaki, Takayuki; Kozioł-Rachwał, Anna; Skowroński, Witold; Zayets, Vadym; Shiota, Yoichi; Tamaru, Shingo; Kubota, Hitoshi; Fukushima, Akio; Yuasa, Shinji; Suzuki, Yoshishige

    2016-04-01

    We study the voltage control of perpendicular magnetic anisotropy in an ultrathin Fe layer sandwiched between the Cr buffer and MgO tunneling barrier layers. A high-interface magnetic anisotropy energy of 2.1 mJ /m2 is achieved in the Cr/ultrathin Fe /MgO structure. A large voltage-induced perpendicular magnetic anisotropy change is observed under the negative-bias voltage applications for the case of the Fe layer thinner than 0.6 nm. The amplitude of the voltage-induced anisotropy energy change exhibits a strong Fe-thickness dependence and it reaches as high as 290 fJ /Vm . The observed high values of the surface anisotropy and voltage-induced anisotropy energy change demonstrate the feasibility of voltage-driven spintronic devices.

  8. Cradle Cap: Symptoms and Causes

    Science.gov (United States)

    Cradle cap Symptoms and causes By Mayo Clinic Staff Common signs of cradle cap include: Patchy scaling or thick crusts on the ... on the ears, eyelids, nose and groin. Cradle cap is common in newborns. It usually isn't ...

  9. Spontaneous and strong multi-layer graphene n-doping on soda-lime glass and its application in graphene-semiconductor junctions

    Science.gov (United States)

    Dissanayake, D. M. N. M.; Ashraf, A.; Dwyer, D.; Kisslinger, K.; Zhang, L.; Pang, Y.; Efstathiadis, H.; Eisaman, M. D.

    2016-02-01

    Scalable and low-cost doping of graphene could improve technologies in a wide range of fields such as microelectronics, optoelectronics, and energy storage. While achieving strong p-doping is relatively straightforward, non-electrostatic approaches to n-dope graphene, such as chemical doping, have yielded electron densities of 9.5 × 1012 e/cm2 or below. Furthermore, chemical doping is susceptible to degradation and can adversely affect intrinsic graphene’s properties. Here we demonstrate strong (1.33 × 1013 e/cm2), robust, and spontaneous graphene n-doping on a soda-lime-glass substrate via surface-transfer doping from Na without any external chemical, high-temperature, or vacuum processes. Remarkably, the n-doping reaches 2.11 × 1013 e/cm2 when graphene is transferred onto a p-type copper indium gallium diselenide (CIGS) semiconductor that itself has been deposited onto soda-lime-glass, via surface-transfer doping from Na atoms that diffuse to the CIGS surface. Using this effect, we demonstrate an n-graphene/p-semiconductor Schottky junction with ideality factor of 1.21 and strong photo-response. The ability to achieve strong and persistent graphene n-doping on low-cost, industry-standard materials paves the way toward an entirely new class of graphene-based devices such as photodetectors, photovoltaics, sensors, batteries, and supercapacitors.

  10. Simulation and Optimization of a-Si (n)/c-Si (p) Amorphous Layer of Hetero-junction Battery%a-Si(n)/c-Si(p)异质结电池非晶层的模拟优化

    Institute of Scientific and Technical Information of China (English)

    吴国盛; 王振文; 闻腾; 刘淑平

    2012-01-01

    Afors-het numerical simulation software,for a-Si(n) / a-Si(i) / c-Si(p) battery structure of the main parameters of the amorphous layer,the analog of the emission layer of the hetero junction cells was studied and discussed.Doping concentration,the interface state,the intrinsic amorphous layer thickness and an emission layer made the following conclusions: the thickness of the emission layer is principally affected shortwave photon absorption;decreased with increasing thickness,the battery performance;emission layer heavily doped with a condition to obtain good conversion efficiency;low interface state of the battery performance when the 1014cm-2·eV-1,the battery performance is poor;high quality of the intrinsic amorphous layer can be effectively passivated silicon,to reduce the interface state density,and to improve battery performance,but should be controlled within a certain thickness.%采用afors-het数值模拟软件,针对a-Si(n)/a-Si(i)/c-Si(p)电池结构的非晶层主要参数,模拟研究并讨论了异质结电池的发射层厚度、发射层掺杂浓度、界面态和本征非晶层。提出了如下结论:发射层厚度主要影响短波光子吸收;随着厚度的增加,电池性能均下降;发射层重掺杂是获得好的转化效率的一个条件;界面态较低时对电池性能影响不大,当达到1014cm-2·eV-1时,电池性能很差;高质量的本征非晶层可以有效钝化硅片,降低界面态密度,提高电池性能,但应控制一定厚度内。

  11. Thermally Stable Silver Nanowires-Embedding Metal Oxide for Schottky Junction Solar Cells.

    Science.gov (United States)

    Kim, Hong-Sik; Patel, Malkeshkumar; Park, Hyeong-Ho; Ray, Abhijit; Jeong, Chaehwan; Kim, Joondong

    2016-04-06

    Thermally stable silver nanowires (AgNWs)-embedding metal oxide was applied for Schottky junction solar cells without an intentional doping process in Si. A large scale (100 mm(2)) Schottky solar cell showed a power conversion efficiency of 6.1% under standard illumination, and 8.3% under diffused illumination conditions which is the highest efficiency for AgNWs-involved Schottky junction Si solar cells. Indium-tin-oxide (ITO)-capped AgNWs showed excellent thermal stability with no deformation at 500 °C. The top ITO layer grew in a cylindrical shape along the AgNWs, forming a teardrop shape. The design of ITO/AgNWs/ITO layers is optically beneficial because the AgNWs generate plasmonic photons, due to the AgNWs. Electrical investigations were performed by Mott-Schottky and impedance spectroscopy to reveal the formation of a single space charge region at the interface between Si and AgNWs-embedding ITO layer. We propose a route to design the thermally stable AgNWs for photoelectric device applications with investigation of the optical and electrical aspects.

  12. F-Layer Polar Cap Arcs.

    Science.gov (United States)

    1987-09-01

    0920 UT, 26 January !985 32 m U 4/ - 4’. -4-4 m -~ I o 4’. .4 @1 - p .1?. ’I.. 0 r B- ~~4~9~ - I ~1 3 ~Dl ~ ~ *-~ N ’~ 4 D 0z 3a .4 c~.) *~*~) ID * 4-S... Mango , "Ionospheric Irregularities and Their Potential Impact on Synthetic Aperture Radar", Radio Science, v.18, no.5, pp. 765-774, September October

  13. Recombination-current suppression in GaAs p-n junctions grown on AlGaAs buffer layers by molecular-beam epitaxy

    Science.gov (United States)

    Rancour, D. P.; Melloch, M. R.; Pierret, R. F.; Lundstrom, M. S.; Klausmeier-Brown, M. E.; Kyono, C. S.

    1987-08-01

    n+pp+GaAs and n+pP+ GaAs/GaAs/Al0.3Ga0.7As mesa diodes have been fabricated from films grown by molecular-beam epitaxy. The diodes made from films employing an AlGaAs buffer layer show marked improvements (a factor of 5 reduction) in recombination current densities. Deep level transient spectroscopy measurements moreover indicate that deep level concentrations are reduced by the AlGaAs buffer.

  14. Cradle Cap (For Parents)

    Science.gov (United States)

    ... is the common term for seborrheic dermatitis , or seborrhea, which is called dandruff in older kids and ... another factor in the development of cradle cap. Seborrhea happens most often in babies and teenagers. In ...

  15. Dependence of transport properties in tunnel junction on boron doping

    Energy Technology Data Exchange (ETDEWEB)

    Shi, M.J.; Zeng, X.B.; Liu, S.Y.; Peng, W.B; Xiao, H.B; Liao, X.B.; Wang, Z.G.; Kong, G.L. [Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)

    2010-04-15

    Boron-doped hydrogenated silicon films with different gaseous doping ratio (B{sub 2}H{sub 6}/SiH{sub 4}) were fabricated as recombination p layers in tunnel junctions. The measurements of I-V characteristics of the junctions and transparency spectra of p layer indicated that the best gaseous doping ratio of the recombination layer is 0.04, which is correlated to the degradation of short range order (SRO) in the inserted p thin film. The junction with such recombination layer has small resistance, near ohmic contact. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  16. Impact Response Study on Covering Cap of Aircraft Big-Size Integral Fuel Tank

    Science.gov (United States)

    Wang, Fusheng; Jia, Senqing; Wang, Yi; Yue, Zhufeng

    2016-10-01

    In order to assess various design concepts and choose a kind of covering cap design scheme which can meet the requirements of airworthiness standard and ensure the safety of fuel tank. Using finite element software ANSYS/LS- DYNA, the impact process of covering cap of aircraft fuel tank by projectile were simulated, in which dynamical characteristics of simple single covering cap and gland double-layer covering cap impacted by titanium alloy projectile and rubber projectile were studied, as well as factor effects on simple single covering cap and gland double-layer covering cap under impact region, impact angle and impact energy were also studied. Though the comparison of critical damage velocity and element deleted number of the covering caps, it shows that the external covering cap has a good protection effect on internal covering cap. The regions close to boundary are vulnerable to appear impact damage with titanium alloy projectile while the regions close to center is vulnerable to occur damage with rubber projectile. Equivalent strain in covering cap is very little when impact angle is less than 15°. Element deleted number in covering cap reaches the maximum when impact angle is between 60°and 65°by titanium alloy projectile. While the bigger the impact angle and the more serious damage of the covering cap will be when rubber projectile impact composite covering cap. The energy needed for occurring damage on external covering cap and internal covering cap is less than and higher than that when single covering cap occur damage, respectively. The energy needed for complete breakdown of double-layer covering cap is much higher than that of single covering cap.

  17. Perfect spin filtering controlled by an electric field in a bilayer graphene junction:Effect of layer-dependent exchange energy

    Institute of Scientific and Technical Information of China (English)

    Kitakorn Jatiyanon; I-Ming Tang; Bumned Soodchomshom

    2016-01-01

    Magneto transport of carriers with a spin-dependent gap in a ferromagnetic-gated bilayer of graphene is investigated. We focus on the effect of an energy gap induced by the mismatch of the exchange fields in the top and bottom layers of an AB-stacked graphene bilayer. The interplay of the electric and exchange fields causes the electron to acquire a spin-dependent energy gap. We find that, only in the case of the anti-parallel configuration, the effect of a magnetic-induced gap will give rise to perfect spin filtering controlled by the electric field. The resolution of the spin filter may be enhanced by varying the bias voltage. Perfect switching of the spin polarization from+100%to−100%by reversing the direction of electric field is predicted. Giant magnetoresistance is predicted to be easily realized when the applied electric field is smaller than the magnetic energy gap. It should be pointed out that the perfect spin filter is due to the layer-dependent exchange energy. This work points to the potential application of bilayer graphene in spintronics.

  18. Fixed-gap tunnel junction for reading DNA nucleotides.

    Science.gov (United States)

    Pang, Pei; Ashcroft, Brian Alan; Song, Weisi; Zhang, Peiming; Biswas, Sovan; Qing, Quan; Yang, Jialing; Nemanich, Robert J; Bai, Jingwei; Smith, Joshua T; Reuter, Kathleen; Balagurusamy, Venkat S K; Astier, Yann; Stolovitzky, Gustavo; Lindsay, Stuart

    2014-12-23

    Previous measurements of the electronic conductance of DNA nucleotides or amino acids have used tunnel junctions in which the gap is mechanically adjusted, such as scanning tunneling microscopes or mechanically controllable break junctions. Fixed-junction devices have, at best, detected the passage of whole DNA molecules without yielding chemical information. Here, we report on a layered tunnel junction in which the tunnel gap is defined by a dielectric layer, deposited by atomic layer deposition. Reactive ion etching is used to drill a hole through the layers so that the tunnel junction can be exposed to molecules in solution. When the metal electrodes are functionalized with recognition molecules that capture DNA nucleotides via hydrogen bonds, the identities of the individual nucleotides are revealed by characteristic features of the fluctuating tunnel current associated with single-molecule binding events.

  19. Molecular electronic junction transport

    DEFF Research Database (Denmark)

    Solomon, Gemma C.; Herrmann, Carmen; Ratner, Mark

    2012-01-01

    Whenasinglemolecule,oracollectionofmolecules,isplacedbetween two electrodes and voltage is applied, one has a molecular transport junction. We discuss such junctions, their properties, their description, and some of their applications. The discussion is qualitative rather than quantitative, and f...

  20. Storage of sperm in the uterovaginal junction and its incidence on the numbers of spermatozoa present in the perivitelline layer of hens' eggs.

    Science.gov (United States)

    Brillard, J P; Antoine, H

    1990-09-01

    1. The numbers of spermatozoa found in the perivitelline layer (perivitelline spermatozoa) of hens' eggs during a 14-d period after insemination were found to be log-dose dependent (r = 0.99) on the quantities of spermatozoa inseminated intravaginally in these hens (50, 100, 200 or 400 million/female). 2. Highly significant correlations were also observed between the perivitelline spermatozoa and the proportion of uterovaginal sperm-storage tubules containing spermatozoa on day 14 after insemination. 3. These data confirm that the number of perivitelline spermatozoa in eggs laid on day 2 after artificial insemination (AI) are highly correlated with the mean percentages of fertility of its duration over a 14-d or 24-d period. As a consequence, eggs laid by the 10% highest or the 10% lowest females primarily classified on the basis of this variable exhibited on average 99% or 49.7% fertility, respectively, over a two-week period after AI.

  1. Martian north polar cap summer water cycle

    Science.gov (United States)

    Brown, Adrian J.; Calvin, Wendy M.; Becerra, Patricio; Byrne, Shane

    2016-10-01

    A key outstanding question in Martian science is "are the polar caps gaining or losing mass and what are the implications for past, current and future climate?" To address this question, we use observations from the Compact Reconnaissance Imaging Spectrometer for Mars (CRISM) of the north polar cap during late summer for multiple Martian years, to monitor the summertime water cycle in order to place quantitative limits on the amount of water ice deposited and sublimed in late summer. We establish here for the first time the summer cycle of water ice absorption band signatures on the north polar cap. We show that in a key region in the interior of the north polar cap, the absorption band depths grow until Ls = 120, when they begin to shrink, until they are obscured at the end of summer by the north polar hood. This behavior is transferable over the entire north polar cap, where in late summer regions 'flip' from being net sublimating into net condensation mode. This transition or 'mode flip' happens earlier for regions closer to the pole, and later for regions close to the periphery of the cap. The observations and calculations presented herein estimate that on average a water ice layer ∼70 microns thick is deposited during the Ls = 135-164 period. This is far larger than the results of deposition on the south pole during summer, where an average layer 0.6-6 microns deep has been estimated by Brown et al. (2014) Earth Planet. Sci. Lett., 406, 102-109.

  2. InGaAs/GaAs, strained-layer superlattice (SLS), junction photodetectors, LED's, injection LASER's and FET's for optelectronic IC applications

    Energy Technology Data Exchange (ETDEWEB)

    Zipperian, T.E.; Dawson, L.R.; Barnes, C.E.; Wiczer, J.J.; Osbourn, G.C.

    1984-01-01

    A set of optoelectronic devices including p/sup -/n junction photodetectors, emitters (both an LED and a stripe-geometry, injection LASER), and a gain device have been fabricated from In/sub 0/./sub 2/Ga/sub 0/./sub 8/As/GaAs strained-layer superlattice (SLS) material. The photodetectors have demonstrated a peak external quantum efficiency at zero volts reverse bias uncorrected for surface reflection) of 50% at 770nm and an optical absorption edge at 1050nm. Both the LED and injection LASER have peak, room temperature, emission wavelengths near 1020nm. The LASER exhibited cw, 77k operation at 976nm with a threshold current of 95mA, the first reported cw operation of an InGaAs/GaAs SLS LASER. Previously reported studies of prototype, double-gate, modulation-doped FETs (channel length = 2.5um) have demonstrated peak intrinsic transconductances of 120mS/mm at room temperature and 190mS/mm at 77K. These encouraging photodetector, LED, LASER, and FET results demonstrate that useful optical and electronic devices can be fabricated from mismatched materials and that the InGaAs/GaAs SLS system in an attractive candidate for integrated optoelectronic applications.

  3. Electroplated Ni on the PN Junction Semiconductor

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Jin Joo; Uhm, Young Rang; Son, Kwang Jae; Kim, Jong Bum; Choi, Sang Moo; Park, Jong Han; Hong, Jintae [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of)

    2015-05-15

    Nickel (Ni) electroplating was implemented by using a metal Ni powder in order to establish a Ni-63 plating condition on the PN junction semiconductor needed for production of betavoltaic battery. PN junction semiconductors with a Ni seed layer of 500 and 1000 A were coated with Ni at current density from 10 to 50 mA cm{sup 2}. The surface roughness and average grain size of Ni deposits were investigated by XRD and SEM techniques. The roughness of Ni deposit was increased as the current density was increased, and decreased as the thickness of Ni seed layer was increased.

  4. What Lies Below a Martian Ice Cap

    Science.gov (United States)

    2008-01-01

    [figure removed for brevity, see original site] Click on image for larger annotated version This image (top) taken by the Shallow Radar instrument on NASA's Mars Reconnaissance Orbiter reveals the layers of ice, sand and dust that make up the north polar ice cap on Mars. It is the most detailed look to date at the insides of this ice cap. The colored map below the radar picture shows the topography of the corresponding Martian terrain (red and white represent higher ground, and green and yellow lower). The radar image reveals four never-before-seen thick layers of ice and dust separated by layers of nearly pure ice. According to scientists, these thick ice-free layers represent approximately one-million-year-long cycles of climate change on Mars caused by variations in the planet's tilted axis and its eccentric orbit around the sun. Adding up the entire stack of ice gives an estimated age for the north polar ice cap of about 4 million years a finding that agrees with previous theoretical estimates. The ice cap is about 2 kilometers (1.2 miles) thick. The radar picture also shows that the boundary between the ice layers and the surface of Mars underneath is relatively flat (bottom white line on the right). This implies that the surface of Mars is not sagging, or bending, under the weight of the ice cap and this, in turn, suggests that the planet's lithosphere, a combination of the crust and the strong parts of the upper mantle, is thicker than previously thought. A thicker lithosphere on Mars means that temperatures increase more gradually with depth toward the interior. Temperatures warm enough for water to be liquid are therefore deeper than previously thought. Likewise, if liquid water does exist in aquifers below the surface of Mars, and if there are any organisms living in that water, they would have to be located deeper in the planet. The topography data are from Mars Orbiter Laser Altimeter, which was flown on NASA's Mars Global Surveyor mission. NPLD stands

  5. North Polar Cap

    Science.gov (United States)

    2004-01-01

    [figure removed for brevity, see original site] This week we will be looking at five examples of laminar wind flow on the north polar cap. On Earth, gravity-driven south polar cap winds are termed 'catabatic' winds. Catabatic winds begin over the smooth expanse of the cap interior due to temperature differences between the atmosphere and the surface. Once begun, the winds sweep outward along the surface of the polar cap toward the sea. As the polar surface slopes down toward sealevel, the wind speeds increase. Catabatic wind speeds in the Antartic can reach several hundreds of miles per hour. In the images of the Martian north polar cap we can see these same type of winds. Notice the streamers of dust moving downslope over the darker trough sides, these streamers show the laminar flow regime coming off the cap. Within the trough we see turbulent clouds of dust, kicked up at the trough base as the winds slow down and enter a chaotic flow regime. The horizontal lines in these images are due to framelet overlap and lighting conditions over the bright polar cap. Image information: VIS instrument. Latitude 86.5, Longitude 64.5 East (295.5 West). 40 meter/pixel resolution. Note: this THEMIS visual image has not been radiometrically nor geometrically calibrated for this preliminary release. An empirical correction has been performed to remove instrumental effects. A linear shift has been applied in the cross-track and down-track direction to approximate spacecraft and planetary motion. Fully calibrated and geometrically projected images will be released through the Planetary Data System in accordance with Project policies at a later time. NASA's Jet Propulsion Laboratory manages the 2001 Mars Odyssey mission for NASA's Office of Space Science, Washington, D.C. The Thermal Emission Imaging System (THEMIS) was developed by Arizona State University, Tempe, in collaboration with Raytheon Santa Barbara Remote Sensing. The THEMIS investigation is led by Dr. Philip Christensen

  6. Perpendicular magnetization of CoFeB on top of an amorphous buffer layer

    Science.gov (United States)

    Kim, Dongseok; Jung, K. Y.; Joo, Sungjung; Jang, Youngjae; Hong, Jinki; Lee, B. C.; You, C. Y.; Cho, J. H.; Kim, M. Y.; Rhie, K.

    2015-01-01

    Perpendicular magnetic anisotropy was observed in sputtered FeZr/CoFeB/MgO multilayers. A thin paramagnetic amorphous FeZr layer was used as a buffer layer and perpendicular anisotropy was obtained by annealing the samples without an external magnetic field. The critical CoFeB thickness for perpendicular anisotropy was 1.8 nm; the anisotropy changes from out-of-plane to in-plane as the CoFeB thickness increases beyond this point. Perpendicular anisotropy was also enhanced when a Ta layer was capped on top of the MgO layer. The amorphous buffer provided better perpendicular anisotropy than previously reported Ta buffer, and it may be applied to perpendicular magnetization MRAM devices where good uniformity of tunnel junctions is required.

  7. CAP2, cyclase-associated protein 2, is a dual compartment protein.

    Science.gov (United States)

    Peche, V; Shekar, S; Leichter, M; Korte, H; Schröder, R; Schleicher, M; Holak, T A; Clemen, C S; Ramanath-Y, B; Pfitzer, G; Karakesisoglou, I; Noegel, A A

    2007-10-01

    Cyclase-associated proteins (CAPs) are evolutionarily conserved proteins with roles in regulating the actin cytoskeleton and in signal transduction. Mammals have two CAP genes encoding the related CAP1 and CAP2. We studied the distribution and subcellular localization of CAP1 and CAP2 using specific antibodies. CAP1 shows a broad tissue distribution, whereas CAP2 is significantly expressed only in brain, heart and skeletal muscle, and skin. CAP2 is found in the nucleus in undifferentiated myoblasts and at the M-line of differentiated myotubes. In PAM212, a mouse keratinocyte cell line, CAP2 is enriched in the nucleus, and sparse in the cytosol. By contrast, CAP1 localizes to the cytoplasm in PAM212 cells. In human skin, CAP2 is present in all living layers of the epidermis localizing to the nuclei and the cell periphery. In in vitro studies, a C-terminal fragment of CAP2 interacts with actin, indicating that CAP2 has the capacity to bind to actin.

  8. Processing of Superconductor-Normal-Superconductor Josephson Edge Junctions

    Science.gov (United States)

    Kleinsasser, A. W.; Barner, J. B.

    1997-01-01

    The electrical behavior of epitaxial superconductor-normal-superconductor (SNS) Josephson edge junctions is strongly affected by processing conditions. Ex-situ processes, utilizing photoresist and polyimide/photoresist mask layers, are employed for ion milling edges for junctions with Yttrium-Barium-Copper-Oxide (YBCO) electrodes and primarily Co-doped YBCO interlayers.

  9. Josephson tunnel junctions with ferromagnetic interlayer

    Energy Technology Data Exchange (ETDEWEB)

    Weides, M.P.

    2006-07-01

    Superconductivity and ferromagnetism are well-known physical properties of solid states that have been widely studied and long thought about as antagonistic phenomena due to difference in spin ordering. It turns out that the combination of both superconductor and ferromagnet leads to a very rich and interesting physics. One particular example, the phase oscillations of the superconducting order parameter inside the ferromagnet, will play a major role for the devices discussed in this work. In this thesis, I present Josephson junctions with a thin Al{sub 2}O{sub 3} tunnel barrier and a ferromagnetic interlayer, i.e. superconductor-insulator-ferromagnet-superconductor (SIFS) stacks. The fabrication of junctions was optimized regarding the insulation of electrodes and the homogeneity of the current transport. The junctions were either in the 0 or {pi} coupled ground state, depending on the thickness of the ferromagnetic layer and on temperature. The influence of ferromagnetic layer thickness on the transport properties and the coupling (0, {pi}) of SIFS tunnel junctions was studied. Furthermore, using a stepped ferromagnetic layer with well-chosen thicknesses, I obtained the so-called 0-{pi} Josephson junction. At a certain temperature this 0-{pi} junction can be made perfectly symmetric. In this case the ground state corresponds to a vortex of supercurrent creating a magnetic flux which is a fraction of the magnetic flux quantum {phi}{sub 0}. Such structures allow to study the physics of fractional vortices and to build various electronic circuits based on them. The SIFS junctions presented here have an exponentially vanishing damping at T {yields} 0. The SIFS technology developed within the framework of this work may be used to construct classical and quantum devices such as oscillators, memory cells and qubits. (orig.)

  10. Gap junction communication in myelinating glia.

    Science.gov (United States)

    Nualart-Marti, Anna; Solsona, Carles; Fields, R Douglas

    2013-01-01

    Gap junction communication is crucial for myelination and axonal survival in both the peripheral nervous system (PNS) and central nervous system (CNS). This review examines the different types of gap junctions in myelinating glia of the PNS and CNS (Schwann cells and oligodendrocytes respectively), including their functions and involvement in neurological disorders. Gap junctions mediate intercellular communication among Schwann cells in the PNS, and among oligodendrocytes and between oligodendrocytes and astrocytes in the CNS. Reflexive gap junctions mediating transfer between different regions of the same cell promote communication between cellular compartments of myelinating glia that are separated by layers of compact myelin. Gap junctions in myelinating glia regulate physiological processes such as cell growth, proliferation, calcium signaling, and participate in extracellular signaling via release of neurotransmitters from hemijunctions. In the CNS, gap junctions form a glial network between oligodendrocytes and astrocytes. This transcellular communication is hypothesized to maintain homeostasis by facilitating restoration of membrane potential after axonal activity via electrical coupling and the re-distribution of potassium ions released from axons. The generation of transgenic mice for different subsets of connexins has revealed the contribution of different connexins in gap junction formation and illuminated new subcellular mechanisms underlying demyelination and cognitive defects. Alterations in metabolic coupling have been reported in animal models of X-linked Charcot-Marie-Tooth disease (CMTX) and Pelizaeus-Merzbarcher-like disease (PMLD), which are caused by mutations in the genes encoding for connexin 32 and connexin 47 respectively. Future research identifying the expression and regulation of gap junctions in myelinating glia is likely to provide a better understanding of myelinating glia in nervous system function, plasticity, and disease. This

  11. Lateral junction dynamics lead the way out.

    Science.gov (United States)

    Behrndt, Martin; Heisenberg, Carl-Philipp

    2014-02-01

    Epithelial cell layers need to be tightly regulated to maintain their integrity and correct function. Cell integration into epithelial sheets is now shown to depend on the N-WASP-regulated stabilization of cortical F-actin, which generates distinct patterns of apical-lateral contractility at E-cadherin-based cell-cell junctions.

  12. Recent advances and design considerations in capping systems

    Energy Technology Data Exchange (ETDEWEB)

    DiPippo, G.J.; Monteleone, M.J. [Eckenfelder Inc., Mahwah, NJ (United States)

    1996-12-31

    Capping systems for solid and hazardous waste management facilities and remedial applications have changed significantly over the years. Early designs were virtually monolithic, with little specification of functional properties. The evolution of capping systems has continued and was hastened by the application of geosynthetics and the diligence of those working in the industry in understanding the design considerations for and performance of various capping materials. Capping systems continue to evolve particularly with respect to the application and understanding of the geosynthetic components. Today the design of an effective cap with a total thickness of two feet, or even less as is discussed further below, is possible. Yet much more work remains in various areas such as more precise means of assessing stability, the effects of strain softening, design using seismic considerations, and the like. This paper describes various recent advances in cap design. Three of these advances are covered in some detail; namely, geosynthetic clay layers, subdrainage design using high capacity geonets, and a thin cap section using direct asphalt overlay of geosynthetics for industrial site applications. Several other advances and design considerations are more briefly addressed to illustrate the breadth of the evolution of capping systems.

  13. Multiplicity of 5' cap structures present on short RNAs.

    Directory of Open Access Journals (Sweden)

    Rehab F Abdelhamid

    Full Text Available Most RNA molecules are co- or post-transcriptionally modified to alter their chemical and functional properties to assist in their ultimate biological function. Among these modifications, the addition of 5' cap structure has been found to regulate turnover and localization. Here we report a study of the cap structure of human short (<200 nt RNAs (sRNAs, using sequencing of cDNA libraries prepared by enzymatic pretreatment of the sRNAs with cap sensitive-specificity, thin layer chromatographic (TLC analyses of isolated cap structures and mass spectrometric analyses for validation of TLC analyses. Processed versions of snoRNAs and tRNAs sequences of less than 50 nt were observed in capped sRNA libraries, indicating additional processing and recapping of these annotated sRNAs biotypes. We report for the first time 2,7 dimethylguanosine in human sRNAs cap structures and surprisingly we find multiple type 0 cap structures (mGpppC, 7mGpppG, GpppG, GpppA, and 7mGpppA in RNA length fractions shorter than 50 nt. Finally, we find the presence of additional uncharacterized cap structures that wait determination by the creation of needed reference compounds to be used in TLC analyses. These studies suggest the existence of novel biochemical pathways leading to the processing of primary and sRNAs and the modifications of their RNA 5' ends with a spectrum of chemical modifications.

  14. Temperature Distribution within a Cold Cap during Nuclear Waste Vitrification

    Energy Technology Data Exchange (ETDEWEB)

    Dixon, Derek R.; Schweiger, Michael J.; Riley, Brian J.; Pokorny, Richard; Hrma, Pavel R.

    2015-07-21

    The kinetics of the feed-to-glass conversion affects the waste vitrification rate in an electric melter. The primary area of interest in this conversion process is the cold cap, a layer of reacting feed on top of molten glass. Knowing the temperature profile within a cold cap will help determine its characteristics and relate them to the rate of glass production. The work presented here provides an experimental determination of the temperature distribution within the cold cap. Since a direct measurement of the temperature field within the cold cap is impracticable, an indirect method was developed where the textural features in a laboratory-made cold cap with a high-level waste feed were mapped as a function of position using optical microscopy, scanning electron microscopy, energy dispersive spectroscopy, and X-ray diffraction. To correlate the temperature distribution to microstructures within the cold cap, microstructures were identified of individual feed samples that were heat treated to set temperatures between 400°C and 1200°C and quenched. The temperature distribution within the cold cap was then established by correlating cold-cap regions with the feed samples of nearly identical structures and was compared with the temperature profile from a mathematical model.

  15. Schaefer's "family cap".

    Science.gov (United States)

    1994-02-14

    Criticism was directed to Maryland Governor William Donald Shaefer's proposal to put family caps on welfare payments to recipients. The idea was to stop automatic increases in welfare payments if a recipient has an additional child. The objection was that 77%, or the bulk of welfare recipients, have only one or two children, and there is little, if any, evidence that welfare caps influence childbearing. The consequences of such reform would be the penalization of children. The political reality is that symbolism has become more important than facts. Putting a cap on welfare may make people feel better about welfare, and may show fairness to working people who don't get raises when their family size increases, but there are other implications. The messages to welfare recipients to stop having children, but not providing the means to do so, is hypocritical. Medicaid abortions were restricted in 1978 by politicians, but provision for better access to contraceptives was never promoted or achieved. Circumstances limit opportunities. The quality of care in public health clinics is abysmal: long lines and overcrowding, and inadequate proximity to welfare recipients' housing. Transportation, particularly in rural areas, is an impediment to access. It is estimated that only 60% of women eligible for government-funded contraception have access. A sign of serious welfare reform will be budget appropriations for day care, job training, and other reform programs.

  16. Organic tandem and multi-junction solar cells

    NARCIS (Netherlands)

    Hadipour, Afshin; de Boer, Bert; Blom, Paul W. M.

    2008-01-01

    The emerging field of stacked layers (double- and even multi-layers) in organic photovoltaic cells is reviewed. Owing to the limited absorption width of organic molecules and polymers, only a small fraction of the solar flux can be harvested by a single-layer bulk hetero-junction photovoltaic cell.

  17. Edge-Geometry NbN/MgO/NbN Tunnel Junctions

    Science.gov (United States)

    Hunt, Brian D.; Leduc, Henry G.

    1991-01-01

    Superconductor/insulator/superconductor (SIS) tunnel junctions fabricated with base and counter electrodes of NbN separated by thin layers of MgO. Useful as submillimeter-wave mixers and fast switches. Use of edge geometry to define small junction makes possible to fabricate junction by process including conventional photolithography.

  18. Resonance features of coupled Josephson junctions: radiation and shunting

    Science.gov (United States)

    Shukrinov, Yu M.; Seidel, P.; Il'ichev, E.; Nawrocki, W.; Grajcar, M.; Plecenik, P. A.; Rahmonov, I. R.; Kulikov, K.

    2012-11-01

    We study the phase dynamics and the resonance features of coupled Josephson junctions in layered superconductors and their manifestations in the current- voltage characteristics and temporal dependence of the electric charge in the superconducting layers. Results on the effect of the external radiation and shunting of the stack of Josephson junctions by LC-elements are presented. We discuss the ideas concerning the experimental observation of these resonances.

  19. Perpendicular magnetization of CoFeB on top of an amorphous buffer layer

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Dongseok; Jung, K.Y. [Department of Display and Semiconductor Physics, Korea University, Sejong 339-700 (Korea, Republic of); Joo, Sungjung [Department of Display and Semiconductor Physics, Korea University, Sejong 339-700 (Korea, Republic of); Center for Electricity and Magnetism, Korea Research Institute of Standard and Science, Daejeon 305-340 (Korea, Republic of); Jang, Youngjae; Hong, Jinki [Department of Display and Semiconductor Physics, Korea University, Sejong 339-700 (Korea, Republic of); Lee, B.C.; You, C.Y.; Cho, J.H. [Department of Physics, Inha University, Incheon 402-751 (Korea, Republic of); Kim, M.Y. [Department of Nano Physics, Sookmyung Women' s University, Seoul 140-742 (Korea, Republic of); Rhie, K., E-mail: krhie@korea.ac.kr [Department of Display and Semiconductor Physics, Korea University, Sejong 339-700 (Korea, Republic of)

    2015-01-15

    Perpendicular magnetic anisotropy was observed in sputtered FeZr/CoFeB/MgO multilayers. A thin paramagnetic amorphous FeZr layer was used as a buffer layer and perpendicular anisotropy was obtained by annealing the samples without an external magnetic field. The critical CoFeB thickness for perpendicular anisotropy was 1.8 nm; the anisotropy changes from out-of-plane to in-plane as the CoFeB thickness increases beyond this point. Perpendicular anisotropy was also enhanced when a Ta layer was capped on top of the MgO layer. The amorphous buffer provided better perpendicular anisotropy than previously reported Ta buffer, and it may be applied to perpendicular magnetization MRAM devices where good uniformity of tunnel junctions is required. - Highlights: • Perpendicular magnetic anisotropy (PMA) of buffer/CoFeB/MgO was investigated. • The PMA was enhanced by using an amorphous buffer. • The PMA of the CoFeB layer was maintained up to 1.8 nm. • Ta capping layer further improved the PMA by 40%.

  20. Magnetic tunnel junctions (MTJs)

    Institute of Scientific and Technical Information of China (English)

    2001-01-01

    We review the giant tunnel magnetoresistance (TMR) in ferromagnetic-insulator-ferromagnetic junctions discovered in recent years, which is the magnetoresistance (MR) associated with the spin-dependent tunneling between two ferromagnetic metal films separated by an insulating thin tunnel barrier. The theoretical and experimental results including junction conductance, magnetoresistance and their temperature and bias dependences are described.

  1. Stacked Josephson Junctions

    DEFF Research Database (Denmark)

    Madsen, Søren Find; Pedersen, Niels Falsig; Christiansen, Peter Leth

    2010-01-01

    Long Josephson junctions have for some time been considered as a source of THz radiation. Solitons moving coherently in the junctions is a possible source for this radiation. Analytical computations of the bunched state and bunching-inducing methods are reviewed. Experiments showing THz radiation...

  2. Simulation of Tunnel Junction in Cascade Solar Cell (GaAs/Ge Using AMPS-1D

    Directory of Open Access Journals (Sweden)

    Benmoussa Dennai

    2014-11-01

    Full Text Available The development of the tunnel junction interconnect was key the first two-terminal monolithic, multi-junction solar cell development. This paper describes simulation for the tunnel junction (GaAs between top cell (GaAs and bottom cell (Ge. This solar cell cascade was simulated when using one dimensional simulation program called analysis of microelectronic and photonic structures (AMPS-1D. In the simulation, the thickness of the tunnel junction layer was varied from 10 to 50 nm. By varying thickness of tunnel junction layer the simulated device performance was demonstrate in the form of current-voltage(I-V characteristics and quantum efficiency (QE.

  3. Polar Cap Retreat

    Science.gov (United States)

    2004-01-01

    13 August 2004 This red wide angle Mars Global Surveyor (MGS) Mars Orbiter Camera (MOC) image shows a view of the retreating seasonal south polar cap in the most recent spring in late 2003. Bright areas are covered with frost, dark areas are those from which the solid carbon dioxide has sublimed away. The center of this image is located near 76.5oS, 28.2oW. The scene is large; it covers an area about 250 km (155 mi) across. The scene is illuminated by sunlight from the upper left.

  4. Characterizing pathways by which gravitropic effectors could move from the root cap to the root of primary roots of Zea mays

    Science.gov (United States)

    Moore, R.; McClelen, C. E.

    1989-01-01

    Plasmodesmata linking the root cap and root in primary roots Zea mays are restricted to approx. 400 protodermal cells bordering approx. 110000 microns2 of the calyptrogen of the root cap. This area is less than 10% of the cross-sectional area of the root-tip at the cap junction. Therefore, gravitropic effectors moving from the root cap to the root can move symplastically only through a relatively small area in the centre of the root. Decapped roots are non-responsive to gravity. However, decapped roots whose caps are replaced immediately after decapping are strongly graviresponsive. Thus, gravicurvature occurs only when the root cap contacts the root, and symplastic continuity between the cap and root is not required for gravicurvature. Completely removing mucilage from the root tip renders the root non-responsive to gravity. Taken together, these data suggest that gravitropic effectors move apoplastically through mucilage from the cap to the root.

  5. Brief rapid thermal treatment effect on patterned CoFeB-based magnetic tunneling junctions

    Science.gov (United States)

    Wu, Kuo-Ming; Huang, Chao-Hsien; Wang, Yung-Hung; Kao, Ming-Jer; Tsai, Ming-Jinn; Wu, Jong-Ching; Horng, Lance

    2007-05-01

    The brief thermal treatment effects on the magnetoresistance of microstructured Co60Fe20B20-based magnetic tunneling junctions have been studied. The elliptical shape of devices with long/short axis of 4/2μm was patterned out of film stack of seed layer (20)/PtMn(15)/Co60Fe20B20(3)/Al(0.7)oxide/C60Fe20B20(20)/capping layer (48) (thickness unit in nanometers) combining conventional lithography and inductively coupled plasma reactive ion beam etching technologies. The thermal annealing was carried out with device loading into a furnace with preset temperatures ranging from 100to400°C for only 5min in the absence of any external magnetic field. The magnetoresistance was found to increase with increasing annealing temperatures up to 250°C and then decrease at higher annealing temperatures. In addition, the magnetoresistance ratio of around 35%, similar to that of as-fabricated devices, sustains up to annealing temperature of 350°C. This survival of magnetoresistance at higher annealing temperature is due to boron conservation in the amorphous CoFeB ferromagnetic layer at higher annealing temperature for only a short time, which is manifested using x-ray diffractometer technique.

  6. Temperature Distribution within a Cold Cap during Nuclear Waste Vitrification.

    Science.gov (United States)

    Dixon, Derek R; Schweiger, Michael J; Riley, Brian J; Pokorny, Richard; Hrma, Pavel

    2015-07-21

    The kinetics of the feed-to-glass conversion affects the waste vitrification rate in an electric glass melter. The primary area of interest in this conversion process is the cold cap, a layer of reacting feed on top of the molten glass. The work presented here provides an experimental determination of the temperature distribution within the cold cap. Because direct measurement of the temperature field within the cold cap is impracticable, an indirect method was developed in which the textural features in a laboratory-made cold cap with a simulated high-level waste feed were mapped as a function of position using optical microscopy, scanning electron microscopy, energy dispersive spectroscopy, and X-ray diffraction. The temperature distribution within the cold cap was established by correlating microstructures of cold-cap regions with heat-treated feed samples of nearly identical structures at known temperatures. This temperature profile was compared with a mathematically simulated profile generated by a cold-cap model that has been developed to assess the rate of glass production in a melter.

  7. Magnetic tunnel junctions with Co:TiO2 magnetic semiconductor electrodes

    NARCIS (Netherlands)

    Lee, Y.J.; Abhishek Kumar, A.K.; Kumar, A.; Vera Marun, I.J.; de Jong, Machiel Pieter; Jansen, R.

    2010-01-01

    Spin-polarized tunneling is investigated in magnetic tunnel junctions containing an ultrathin interfacial layer of Co:TiO2 magnetic semiconductor. The Co:TiO2 layers (0 to 1 nm thick) are inserted at the SrTiO3/Co interface in La0.67Sr0.33MnO3/SrTiO3/Co tunnel junctions. For all junctions we find a

  8. Equivalent Josephson junctions

    Science.gov (United States)

    Boyadjiev, T. L.; Semerdjieva, E. G.; Shukrinov, Yu. M.

    2008-01-01

    The magnetic field dependences of critical current are numerically constructed for a long Josephson junction with a shunt-or resistor-type microscopic inhomogeneities and compared to the critical curve of a junction with exponentially varying width. The numerical results show that it is adequate to replace the distributed inhomogeneity of a long Josephson junction by an inhomogeneity localized at one of its ends, which has certain technological advantages. It is also shown that the critical curves of junctions with exponentially varying width and inhomogeneities localized at the ends are unaffected by the mixed fluxon-antifluxon distributions of the magnetic flow. This fact may explain the improvement of the spectra of microwave radiation noted in the literature.

  9. Quantum Junction Solar Cells

    KAUST Repository

    Tang, Jiang

    2012-09-12

    Colloidal quantum dot solids combine convenient solution-processing with quantum size effect tuning, offering avenues to high-efficiency multijunction cells based on a single materials synthesis and processing platform. The highest-performing colloidal quantum dot rectifying devices reported to date have relied on a junction between a quantum-tuned absorber and a bulk material (e.g., TiO 2); however, quantum tuning of the absorber then requires complete redesign of the bulk acceptor, compromising the benefits of facile quantum tuning. Here we report rectifying junctions constructed entirely using inherently band-aligned quantum-tuned materials. Realizing these quantum junction diodes relied upon the creation of an n-type quantum dot solid having a clean bandgap. We combine stable, chemically compatible, high-performance n-type and p-type materials to create the first quantum junction solar cells. We present a family of photovoltaic devices having widely tuned bandgaps of 0.6-1.6 eV that excel where conventional quantum-to-bulk devices fail to perform. Devices having optimal single-junction bandgaps exhibit certified AM1.5 solar power conversion efficiencies of 5.4%. Control over doping in quantum solids, and the successful integration of these materials to form stable quantum junctions, offers a powerful new degree of freedom to colloidal quantum dot optoelectronics. © 2012 American Chemical Society.

  10. Low temperature junction growth using hot-wire chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Qi; Page, Matthew; Iwaniczko, Eugene; Wang, Tihu; Yan, Yanfa

    2014-02-04

    A system and a process for forming a semi-conductor device, and solar cells (10) formed thereby. The process includes preparing a substrate (12) for deposition of a junction layer (14); forming the junction layer (14) on the substrate (12) using hot wire chemical vapor deposition; and, finishing the semi-conductor device.

  11. Magnetic tunnel junctions with non-collinear anisotropy axes for sensor applications

    CERN Document Server

    Grigorenko, A N

    2003-01-01

    Magnetic tunnel junctions (MTJ) with non-collinear anisotropy axes of magnetic layers have been fabricated for reading head and sensor applications. It is shown that crossed anisotropies of magnetic layers improve sensor sensitivity and time-response compared to the conventional case of aligned anisotropies. The developed micromagnetic model is in good agreement with magnetoresistive properties of fabricated junctions.

  12. All-carbon molecular tunnel junctions.

    Science.gov (United States)

    Yan, Haijun; Bergren, Adam Johan; McCreery, Richard L

    2011-11-30

    This Article explores the idea of using nonmetallic contacts for molecular electronics. Metal-free, all-carbon molecular electronic junctions were fabricated by orienting a layer of organic molecules between two carbon conductors with high yield (>90%) and good reproducibility (rsd of current density at 0.5 V carbon devices exhibit current density-voltage (J-V) behavior similar to those with metallic Cu top contacts. However, the all-carbon devices display enhanced stability to bias extremes and greatly improved thermal stability. Completed carbon/nitroazobenzene(NAB)/carbon junctions can sustain temperatures up to 300 °C in vacuum for 30 min and can be scanned at ±1 V for at least 1.2 × 10(9) cycles in air at 100 °C without a significant change in J-V characteristics. Furthermore, these all-carbon devices can withstand much higher voltages and current densities than can Cu-containing junctions, which fail upon oxidation and/or electromigration of the copper. The advantages of carbon contacts stem mainly from the strong covalent bonding in the disordered carbon materials, which resists electromigration or penetration into the molecular layer, and provides enhanced stability. These results highlight the significance of nonmetallic contacts for molecular electronics and the potential for integration of all-carbon molecular junctions with conventional microelectronics.

  13. Development of Gasless Pyrotechnic Cap

    Science.gov (United States)

    1980-05-01

    beam cathode ray oscillo- scope. The caps were ignited by removing the safety pin . This also triggered the oscilloscope. The change in pressure inside...sensitivity. STRIKER SAFETY PIN PERCUSSION CAP FIXED VOLUME / ;PRESSURE TRANSDUCER TO C.R.O. FIG. 8 - Device used to determine pressure time

  14. Effects of BN & Al2 O3/Epoxy Composites Adhesive Layer on Junction Temperature of LED%BN & Al2 O3/环氧树脂复合材料粘接层对LED灯结温的影响

    Institute of Scientific and Technical Information of China (English)

    吕亚南; 李巧梅; 牟其伍; 文翰颖; 朱玲; 寿梦杰

    2015-01-01

    自制BN/EP(环氧树脂)复合材料和Al2 O3/EP复合材料作为LED灯PCB板和散热铝块之间的粘接层材料,采用精密钻孔的方法用高精度测温仪测量LED灯正常工作时的温度分布,讨论粘接层对结温的影响,并与COMSOL Multiphysics软件模拟结果进行对比分析。实验测量LED结温与模拟结温变化趋势基本一致,结温会随着粘接层厚度的增加而上升、随着粘接层复合材料热导率的增加先快速降低而后趋于平缓。最终得到PCB板和散热铝块间最佳粘接层厚度和粘接层复合材料配比,当BN的质量分数为60%时,BN/EP复合材料粘接层的热导率最高,此时LED结温为75.2℃,比纯环氧树脂粘接层LED的结温降低了27.6℃。而Al2 O3/EP复合材料粘接层LED的最低结温为78.2℃,此时Al2 O3的质量分数为50%。%Homemade BN/EP composites and Al2 O3/EP composites were used as the adhesive layer between PCB and the heat sink of LED, respectively. The temperature distribution of LED working in the normal condition was measured by high-precision thermometers through a small hole. The effect of the adhesive layer composites on the junction temperature of LED was discussed, and was compared with the results from COMSOL simulations. A similar variation trend of junction tempera-ture of LED was observed in both our experiment and COMSOL simulation. The junction temperature of LED raised with the increment of thickness of the adhesive layer. Besides, along with the incre-ment of thermal conductivity of the adhesive layer composites, the junction temperature declined sharply at first, and then gradually decreased to a flat level. At last, we obtained two optimum val-ues of the thickness and the ratio of adhesive layer composites with the best performance. When the mass fraction of BN is 60%, the thermal conductivity of BN/EP composites reaches at the highest level. In this condition, the junction temperature of LED is the lowest (75. 2 ℃) and is

  15. Molecular beam epitaxy growth of germanium junctions for multi-junction solar cell applications

    Science.gov (United States)

    Masuda, T.; Faucher, J.; Lee, M. L.

    2016-11-01

    We report on the molecular beam epitaxy (MBE) growth and device characteristics of Ge solar cells. Integrating a Ge bottom cell beneath a lattice-matched triple junction stack grown by MBE could enable ultra-high efficiencies without metamorphic growth or wafer bonding. However, a diffused junction cannot be readily formed in Ge by MBE due to the low sticking coefficient of group-V molecules on Ge surfaces. We therefore realized Ge junctions by growth of homo-epitaxial n-Ge on p-Ge wafers within a standard III-V MBE system. We then fabricated Ge solar cells, finding growth temperature and post-growth annealing to be key factors for achieving high efficiency. Open-circuit voltage and fill factor values of ~0.175 V and ~0.59 without a window layer were obtained, both of which are comparable to diffused Ge junctions formed by metal-organic vapor phase epitaxy. We also demonstrate growth of high-quality, single-domain GaAs on the Ge junction, as needed for subsequent growth of III-V subcells, and that the surface passivation afforded by the GaAs layer slightly improves the Ge cell performance.

  16. Parametric resonance in the system of long Josephson junctions

    Science.gov (United States)

    Rahmonov, I. R.; Shukrinov, Yu. M.; Irie, A.

    2014-08-01

    The phase dynamics of the system of long Josephson junctions whose length exceeds the Josephson penetration depth has been studied. The possibility of the appearance of a longitudinal plasma wave and parametric resonance has been demonstrated. Both inductive and capacitive couplings between Josephson junctions have been taken into account in the calculations. The current-voltage characteristics, as well as time evolution of the spatial distribution of the electric charge in superconducting layers and the magnetic field, have been calculated in all Josephson junctions of the system. The coexistence of the longitudinal plasma wave and fluxon states has been observed in the region of parametric resonance beginning with a certain length of the Josephson junction. This indicates the appearance of a new unique collective excitation in the system of coupled Josephson junctions, namely, a composite state of the Josephson current, electric field, and vortex magnetic field.

  17. Systematic optimization of quantum junction colloidal quantum dot solar cells

    KAUST Repository

    Liu, Huan

    2012-01-01

    The recently reported quantum junction architecture represents a promising approach to building a rectifying photovoltaic device that employs colloidal quantum dot layers on each side of the p-n junction. Here, we report an optimized quantum junction solar cell that leverages an improved aluminum zinc oxide electrode for a stable contact to the n-side of the quantum junction and silver doping of the p-layer that greatly enhances the photocurrent by expanding the depletion region in the n-side of the device. These improvements result in greater stability and a power conversion efficiency of 6.1 under AM1.5 simulated solar illumination. © 2012 American Institute of Physics.

  18. Burner cap assembly

    Energy Technology Data Exchange (ETDEWEB)

    Craver, A.F.

    1974-05-07

    A new gas burner for domestic gas ranges is economical in cost, has the proper configuration for the aesthetics of the housewife, and overcomes certain undesirable operational features of conventional gas burners. The design eliminates the burner base, eliminates the venturi section of the mixing tube, incorporates a new cap with a novel port configuration, and, in the preferred version, eliminates the air shutter at the primary air inlet to the mixing tube. Because the voluminous conventional burner base has been eliminated, the amount of unburned gas escaping after turning the burner off is no longer sizable enough to disturb the cook. The burner produces less carbon monoxide but a higher temperature and greater efficiency than conventional burners and may be placed much closer to the utensil. Thus, no expensive supplemental mounting brackets are needed below the bottom of the burner box; the burner may even be mounted directly on the oven top without danger of oven contraction/expansion moving the unit out of the allowable burner-height range. The unit requires less cleaning and is less susceptible to closure by lint, dirt, and grease.

  19. Vortex structure in a long Josephson junction with two inhomogeneities

    Energy Technology Data Exchange (ETDEWEB)

    Andreeva, O.Yu. [Tumen Thermal Networks OAO ' TRGK' , Tobolsk 626150 (Russian Federation); Boyadjiev, T.L. [Joint Institute for Nuclear Research, 141980 Dubna (Russian Federation); Shukrinov, Yu.M. [Joint Institute for Nuclear Research, 141980 Dubna (Russian Federation)], E-mail: shukrinv@theor.jinr.ru

    2007-09-01

    We study the vortex structure in the long Josephson junctions with one and two rectangular inhomogeneities in the barrier layer. In case of one inhomogeneity we demonstrate the existence of the asymmetric fluxon states. The disappearance of the mixed fluxon-antifluxon states is shown when the position of the inhomogeneity shifted to the end of the junction. In case of two inhomogeneities the change of the amplitude of Josephson current through the inhomogeneity in the end of the junction makes strong effect on the stability of the fluxon states and smoothes the maximums on the dependence 'critical current-magnetic field'.

  20. Vortex structure in a long Josephson junction with two inhomogeneities

    Science.gov (United States)

    Andreeva, O. Yu.; Boyadjiev, T. L.; Shukrinov, Yu. M.

    2007-09-01

    We study the vortex structure in the long Josephson junctions with one and two rectangular inhomogeneities in the barrier layer. In case of one inhomogeneity we demonstrate the existence of the asymmetric fluxon states. The disappearance of the mixed fluxon-antifluxon states is shown when the position of the inhomogeneity shifted to the end of the junction. In case of two inhomogeneities the change of the amplitude of Josephson current through the inhomogeneity in the end of the junction makes strong effect on the stability of the fluxon states and smoothes the maximums on the dependence “critical current-magnetic field”.

  1. Effect of crystallinity of Co layer on perpendicular exchange bias in Au-capped ultrathin Co film on Cr{sub 2}O{sub 3}(0 0 0 1) thin film

    Energy Technology Data Exchange (ETDEWEB)

    Shiratsuchi, Yu, E-mail: shiratsuchi@mat.eng.osaka-u.ac.j [Department of Materials Science and Engineering, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871 (Japan); Kawahara, Shin-ichi; Noutomi, Hayato [Department of Materials Science and Engineering, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871 (Japan); Arakawa, Kazuto; Mori, Hirotaro [Research Center for Ultra-High Voltage Electron Microscopy, Osaka University, 7-1 Mihogaoka, Ibaraki, Osaka 567-0047 (Japan); Nakatani, Ryoichi [Department of Materials Science and Engineering, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871 (Japan)

    2011-03-15

    The effect of the crystalline quality of ultrathin Co films on perpendicular exchange bias (PEB) has been investigated using a Au/Co/Au/{alpha}-Cr{sub 2}O{sub 3} thin film grown on a Ag-buffered Si(1 1 1) substrate. Our investigation is based on the effect of the Au spacer layer on the crystalline quality of the Co layer and the resultant changes in PEB. An {alpha}-Cr{sub 2}O{sub 3}(0 0 0 1)layer is fabricated by the thermal oxidization of a Cr(1 1 0) thin film. The structural properties of the {alpha}-Cr{sub 2}O{sub 3}(0 0 0 1) layer including the cross-sectional structure, lattice parameters, and valence state have been investigated. The fabricated {alpha}-Cr{sub 2}O{sub 3}(0 0 0 1) layer contains twin domains and has slightly smaller lattice parametersthan those of bulk-Cr{sub 2}O{sub 3}. The valence state of the Cr{sub 2}O{sub 3}(0 0 0 1) layer is similar to that of bulk Cr{sub 2}O{sub 3}. The ultrathin Co film directly grown on the {alpha}-Cr{sub 2}O{sub 3}(0 0 0 1) deposited by an e-beam evaporator is polycrystalline. The insertion of a Au spacer layer with a thickness below 0.5 nm improves the crystalline quality of Co, probably resulting in hcp-Co(0 0 0 1). Perpendicular magnetic anisotropy (PMA) appears below the Neel temperature of Cr{sub 2}O{sub 3} for all the investigated films. Although the PMA appears independently of the crystallinequality of Co, PEB is affected by the crystalline quality of Co. For the polycrystalline Co film, PEB is low, however, a high PEB is observed for the Co films whose in-plane atom arrangement is identical to that of Cr{sup 3+} in Cr{sub 2}O{sub 3}(0 0 0 1). The results are qualitatively discussed on the basis of the direct exchange coupling between Cr and Co at the interface as the dominant coupling mechanism. - Research Highlights: Crystalline orientation of ferromagnetic layer affects the high perpendicular exchange bias. Influence of the perpendicular magnetic anisotropy on the perpendicular exchange bias is weak. Direct

  2. Co2MnSi Heusler alloy as an enhancing layer of perpendicular magnetic anisotropy for MgO-based magnetic tunnel junctions with L10 ordered FePd

    Science.gov (United States)

    Bae, Taejin; Ko, Jungho; Lee, Sangho; Cha, Jongin; Hong, Jongill

    2016-01-01

    Ultra-thin Co2MnSi Heusler alloy improves perpendicular magnetic anisotropy of FePd in an MgO-based magnetic tunnel junction after annealing it just once at a temperature of as low as 400 °C. Co2MnSi as thin as 1.0 nm inserted between MgO and FePd facilitated phase-transformation of 3-nm-thick FePd to ordered L10 and led a change in magnetic anisotropy to perpendicular-to-the-plane. To make it even better, FePd also helped the phase-transformation of Co2MnSi to ordered B2 known to have high spin polarization, which makes the L10 FePd/B2 Co2MnSi bilayer promising for perpendicular-magnetic tunnel junction and improving both thermal stability and tunnel magnetoresistance.

  3. Effect of double MgO tunneling barrier on thermal stability and TMR ratio for perpendicular MTJ spin-valve with tungsten layers

    Science.gov (United States)

    Lee, Seung-Eun; Takemura, Yasutaka; Park, Jea-Gun

    2016-10-01

    A tunneling magneto-resistance (TMR) ratio of ˜163% at an annealing temperature of 400 °C was achieved in a single MgO-based perpendicular-magnetic-tunneling-junction (p-MTJ) spin valve with a tungsten (W)/tantalum (Ta) seed and W capping layer instead of with a Ta seed and capping layer. This was done by improving the interface perpendicular magnetic anisotropy (i-PMA) characteristic of the Co2Fe6B2 free layer and face-centered-cubic (f.c.c.) crystallinity of the MgO tunneling barrier. In particular, a TMR ratio of ˜141% at an annealing temperature of 400 °C and a thermal stability at room temperature of ˜61 were achieved in a double MgO-based p-MTJ spin valve with W/Ta seed, W spacer, and W capping layers by doubling the i-PMA magnetic moment and increasing slightly magnetic anisotropy field (Hk).

  4. Overdamped Josephson junctions for digital applications

    Energy Technology Data Exchange (ETDEWEB)

    Febvre, P., E-mail: Pascal.Febvre@univ-savoie.fr [University of Savoie, IMEP-LAHC – CNRS UMR5130, 73376 Le Bourget du Lac (France); De Leo, N.; Fretto, M.; Sosso, A. [I.N.Ri.M., Istituto Nazionale di Ricerca Metrologica, Strada delle Cacce 91, 10135 Torino (Italy); Belogolovskii, M. [Donetsk Institute for Physics and Engineering, 72 R. Luxemburg str., 83114 Donetsk (Ukraine); Collot, R. [University of Savoie, IMEP-LAHC – CNRS UMR5130, 73376 Le Bourget du Lac (France); Lacquaniti, V. [I.N.Ri.M., Istituto Nazionale di Ricerca Metrologica, Strada delle Cacce 91, 10135 Torino (Italy)

    2013-01-15

    Highlights: ► Properties of self-shunted sub-micron Nb/Al–AlO{sub x}/Nb SNIS junctions are studied. ► 1–100 kA/cm{sup 2} current densities and 0.1–0.7 mV critical voltages are obtained. ► The critical voltage-vs-temperature behavior of SNIS junctions is discussed. ► Numerical results showing an effect of the aluminum film thickness are presented. ► A Josephson balanced comparator is studied for different temperatures of operation. -- Abstract: An interesting feature of Superconductor–Normal metal–Superconductor Josephson junctions for digital applications is due to their non-hysteretic current–voltage characteristics in a broad temperature range below T{sub c}. This allows to design Single-Flux-Quantum (SFQ) cells without the need of external shunts. Two advantages can be drawn from this property: first the SFQ cells can be more compact which leads to a more integrated solution towards nano-devices and more complex circuits; second the absence of electrical parasitic elements associated with the wiring of resistors external to the Josephson junctions increases the performance of SFQ circuits, in particular regarding the ultimate speed of operation. For this purpose Superconductor–Normal metal–Insulator–Superconductor Nb/Al–AlO{sub x}/Nb Josephson junctions have been recently developed at INRiM with aluminum layer thicknesses between 30 and 100 nm. They exhibit non-hysteretic current–voltage characteristics with I{sub c}R{sub n} values higher than 0.5 mV in a broad temperature range and optimal Stewart McCumber parameters at 4.2 K for RSFQ applications. The main features of obtained SNIS junctions regarding digital applications are presented.

  5. Evidence of a reduction reaction of oxidized iron/cobalt by boron atoms diffused toward naturally oxidized surface of CoFeB layer during annealing

    Energy Technology Data Exchange (ETDEWEB)

    Sato, Soshi, E-mail: sato.soshi@cies.tohoku.ac.jp; Honjo, Hiroaki; Niwa, Masaaki [Center for Innovative Integrated Electronic Systems, Tohoku University, 468-1 Aza-aoba, Aramaki, Aoba-ku, Sendai 980-0845 (Japan); JST-ACCEL, 468-1 Aza-aoba, Aramaki, Aoba-ku, Sendai 980-0845 (Japan); Ikeda, Shoji [Center for Innovative Integrated Electronic Systems, Tohoku University, 468-1 Aza-aoba, Aramaki, Aoba-ku, Sendai 980-0845 (Japan); JST-ACCEL, 468-1 Aza-aoba, Aramaki, Aoba-ku, Sendai 980-0845 (Japan); Center for Spintronics Integrated Systems, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 (Japan); Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 (Japan); Ohno, Hideo [Center for Innovative Integrated Electronic Systems, Tohoku University, 468-1 Aza-aoba, Aramaki, Aoba-ku, Sendai 980-0845 (Japan); Center for Spintronics Integrated Systems, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 (Japan); Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 (Japan); WPI-Advanced Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 (Japan); Endoh, Tetsuo [Center for Innovative Integrated Electronic Systems, Tohoku University, 468-1 Aza-aoba, Aramaki, Aoba-ku, Sendai 980-0845 (Japan); JST-ACCEL, 468-1 Aza-aoba, Aramaki, Aoba-ku, Sendai 980-0845 (Japan); Center for Spintronics Integrated Systems, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 (Japan); Graduate School of Engineering, Tohoku University, 6-6 Aza-aoba, Aramaki, Aoba-ku, Sendai 980-8579 (Japan)

    2015-04-06

    We have investigated the redox reaction on the surface of Ta/CoFeB/MgO/CoFeB magnetic tunnel junction stack samples after annealing at 300, 350, and 400 °C for 1 h using angle-resolved X-ray photoelectron spectroscopy for precise analysis of the chemical bonding states. At a capping tantalum layer thickness of 1 nm, both the capping tantalum layer and the surface of the underneath CoFeB layer in the as-deposited stack sample were naturally oxidized. By comparison of the Co 2p and Fe 2p spectra among the as-deposited and annealed samples, reduction of the naturally oxidized cobalt and iron atoms occurred on the surface of the CoFeB layer. The reduction reaction was more significant at higher annealing temperature. Oxidized cobalt and iron were reduced by boron atoms that diffused toward the surface of the top CoFeB layer. A single CoFeB layer was prepared on SiO{sub 2}, and a confirmatory evidence of the redox reaction with boron diffusion was obtained by angle-resolved X-ray photoelectron spectroscopy analysis of the naturally oxidized surface of the CoFeB single layer after annealing. The redox reaction is theoretically reasonable based on the Ellingham diagram.

  6. Graphene junction field-effect transistor

    Science.gov (United States)

    Ou, Tzu-Min; Borsa, Tomoko; van Zeghbroeck, Bart

    2014-03-01

    We have demonstrated for the first time a novel graphene transistor gated by a graphene/semiconductor junction rather than an insulating gate. The transistor operates much like a semiconductor junction Field Effect Transistor (jFET) where the depletion layer charge in the semiconductor modulates the mobile charge in the channel. The channel in our case is the graphene rather than another semiconductor layer. An increased reverse bias of the graphene/n-silicon junction increases the positive charge in the depletion region and thereby reduces the total charge in the graphene. We fabricated individual graphene/silicon junctions as well as graphene jFETs (GjFETs) on n-type (4.5x1015 cm-3) silicon with Cr/Au electrodes and 3 μm gate length. As a control device, we also fabricated back-gated graphene MOSFETs using a 90nm SiO2 on a p-type silicon substrate (1019 cm-3) . The graphene was grown by APCVD on copper foil and transferred with PMMA onto the silicon substrate. The GjFET exhibited an on-off ratio of 3.75, an intrinsic graphene doping of 1.75x1012 cm-2, compared to 1.17x1013 cm-2 in the MOSFET, and reached the Dirac point at 13.5V. Characteristics of the junctions and transistors were measured as a function of temperature and in response to light. Experimental data and a comparison with simulations will be presented.

  7. Modeling superconducting networks containing Josephson junctions by means of PC-based circuit simulation software

    Energy Technology Data Exchange (ETDEWEB)

    Blackburn, J.A. (Department of Physics and Computing, Wilfrid Laurier University, Waterloo, ON (Canada)); Smith, H.J.T. (Department of Physics, University of Waterloo, Waterloo, ON (Canada))

    1990-09-01

    Software packages are now available with which complex analog electronic circuits can be simulated on desktop computers. Using Micro Cap III it is demonstrated that the modeling capabilities of such software can be extended to include {ital superconducting} networks by means of an appropriate equivalent circuit for a Josephson junction.

  8. ATLAS - End-Cap calorimeter

    CERN Multimedia

    2006-01-01

    The End-cap calorimeter was moved with the help of the rails and this calorimeter will measure the energy of particles close to the beam axis when protons collide. Cooling is important for maximum detector efficiency.

  9. ATLAS - End-Cap calorimeter

    CERN Multimedia

    2006-01-01

    The End-cap calorimeter was moved with the help of the rails and this calorimeter will measure the energy of particles close to the beam axis when protons collide. Cooling is important for maximum detector efficiency.

  10. The human myotendinous junction

    DEFF Research Database (Denmark)

    Knudsen, A B; Larsen, M; Mackey, Abigail

    2015-01-01

    The myotendinous junction (MTJ) is a specialized structure in the musculotendinous system, where force is transmitted from muscle to tendon. Animal models have shown that the MTJ takes form of tendon finger-like processes merging with muscle tissue. The human MTJ is largely unknown and has never ...

  11. Junction trees of general graphs

    Institute of Scientific and Technical Information of China (English)

    Xiaofei WANG; Jianhua GUO

    2008-01-01

    In this paper,we study the maximal prime subgraphs and their corresponding structure for any undirected graph.We introduce the notion of junction trees and investigate their structural characteristics,including junction properties,induced-subtree properties,running-intersection properties and maximum-weight spanning tree properties.Furthermore,the characters of leaves and edges on junction trees are discussed.

  12. Comparison of human CAP and CAP2, homologs of the yeast adenylyl cyclase-associated proteins.

    Science.gov (United States)

    Yu, G; Swiston, J; Young, D

    1994-06-01

    We previously reported the identification of human CAP, a protein that is related to the Saccharomyces cerevisiae and Schizosaccharomyces pombe adenylyl cyclase-associated CAP proteins. The two yeast CAP proteins have similar functions: the N-terminal domains are required for the normal function of adenylyl cyclase, while loss of the C-terminal domains result in morphological and nutritional defects that are unrelated to the cAMP pathways. We have amplified and cloned cDNAs from a human glioblastoma library that encode a second CAP-related protein, CAP2. The human CAP and CAP2 proteins are 64% identical. Expression of either human CAP or CAP2 in S. cerevisiae cap- strains suppresses phenotypes associated with deletion of the C-terminal domain of CAP, but does not restore hyper-activation of adenylyl cyclase by RAS2val19. Similarly, expression of either human CAP or CAP2 in S. pombe cap- strains suppresses the morphological and temperature-sensitive phenotypes associated with deletion of the C-terminal domain of CAP in this yeast. In addition, expression of human CAP, but not CAP2, suppresses the propensity to sporulate due to deletion of the N-terminal domain of CAP in S. pombe. This latter observation suggests that human CAP restores normal adenylyl cyclase activity in S. pombe cap- cells. Thus, functional properties of both N-terminal and C-terminal domains are conserved between the human and S. pombe CAP proteins.

  13. 47 CFR 54.507 - Cap.

    Science.gov (United States)

    2010-10-01

    ... 47 Telecommunication 3 2010-10-01 2010-10-01 false Cap. 54.507 Section 54.507 Telecommunication... Universal Service Support for Schools and Libraries § 54.507 Cap. (a) Amount of the annual cap. The annual funding cap on federal universal service support for schools and libraries shall be $2.25 billion per...

  14. 47 CFR 54.623 - Cap.

    Science.gov (United States)

    2010-10-01

    ... 47 Telecommunication 3 2010-10-01 2010-10-01 false Cap. 54.623 Section 54.623 Telecommunication... Universal Service Support for Health Care Providers § 54.623 Cap. (a) Amount of the annual cap. The annual cap on federal universal service support for health care providers shall be $400 million per funding...

  15. The Residual Polar Caps of Mars: Geological Differences and Possible Consequences

    Science.gov (United States)

    Thomas, P. C.; Sullivan, R.; Ingersoll, A. P.; Murray, B. C.; Danielson, G. E.; Herkenhoff, K. E.; Soderblom, L.; Malin, M. C.; Edgett, K. S.; James, P. B.

    2000-01-01

    The Martian polar regions have been known to have thick layered sequences (presumed to consist of silicates and ice), CO2 seasonal frost, and residual frosts that remain through the summer: H2O in the north, largely CO2 in the south. The relationship of the residual frosts to the underlying layered deposits could not be determined from Viking images. The Mars Orbiter Camera on Mars Global Surveyor has provided a 50-fold increase in resolution that shows more differences between the two poles. The north residual cap surface has rough topography of pits, cracks, and knobs, suggestive of ablational forms. This topography is less than a few meters in height, and grades in to surfaces exposing the layers underneath. In contrast, the south residual cap has distinctive collapse and possibly ablational topography emplaced in four or more layers, each approx. two meters thick. The top surface has polygonal depressions suggestive of thermal contraction cracks. The collapse and erosional forms include circular and cycloidal depressions, long sinuous troughs, and nearly parallel sets of troughs. The distinctive topography occurs throughout the residual cap area, but not outside it. Unconformities exposed in polar layers, or other layered materials, do not approximate the topography seen on the south residual cap. The coincidence of a distinct geologic feature, several layers modified by collapse, ablation, and mass movement with the residual cap indicates a distinct composition and/or climate compared to both the remainder of the south polar layered units and those in the north.

  16. Explanation of Unusual Photoluminescence Behavior from InAs Quantum Dots with InAlAs Capping

    Institute of Scientific and Technical Information of China (English)

    Zhongyuan YU; Yongqiang WEI

    2005-01-01

    The effect of different kinds of cap layers on optical property of InAs quantum dots (QDs) on GaAs (100) substrate was studied. Temperature dependent photoluminescence (PL) indicates that the PL integrated intensity from the ground state of InAs QDs capped with an intermediate InAlAs layer drops very little as compared to QDs capped with a thin InGaAs or GaAs cap layer from 15 K up to room temperature. PL integrated intensity ratio of the first excited to ground states for InAs QDs capped with an intermediate InAlAs layer is unexpectedly decreased with increasing temperature, which are attributed to phonon bottleneck effect. A virtual barrier is proposed to describe this physics process and shows good agreement with experimental results when fitting the curve with the value of the virtual barrier 30 meV.

  17. Magnetoresistance of galfenol-based magnetic tunnel junction

    Science.gov (United States)

    Gobaut, B.; Vinai, G.; Castán-Guerrero, C.; Krizmancic, D.; Rafaqat, H.; Roddaro, S.; Rossi, G.; Panaccione, G.; Eddrief, M.; Marangolo, M.; Torelli, P.

    2015-12-01

    The manipulation of ferromagnetic layer magnetization via electrical pulse is driving an intense research due to the important applications that this result will have on memory devices and sensors. In this study we realized a magnetotunnel junction in which one layer is made of Galfenol (Fe1-xGax) which possesses one of the highest magnetostrictive coefficient known. The multilayer stack has been grown by molecular beam epitaxy and e-beam evaporation. Optical lithography and physical etching have been combined to obtain 20x20 micron sized pillars. The obtained structures show tunneling conductivity across the junction and a tunnel magnetoresistance (TMR) effect of up to 11.5% in amplitude.

  18. Modulation of interlayer exchange coupling strength in magnetic tunnel junctions via strain effect

    Energy Technology Data Exchange (ETDEWEB)

    Jiang, Xin, E-mail: jiangxinyj@gmail.com; Li, Zhipeng; Zheng, Yuankai; Kaiser, Christian; Diao, Zhitao; Fang, Jason; Leng, Qunwen, E-mail: Qunwen.Leng@wdc.com [Western Digital Corporation, 44100 Osgood Road, Fremont, California 94539 (United States)

    2015-09-15

    Interlayer exchange coupling of two ferromagnetic electrodes separated by a thin MgO tunnel barrier is investigated using magneto-optical Kerr effect. We find that the coupling field can be reduced by more than 40% as the thickness of a top Ta capping layer increases from 0.5 to 1.2 nm. In contrast, a similar film stack with an additional 3 nm Ru capping layer displays no such dependence on Ta thickness. Transmission electron microscopy study shows that the oxidation of the exposed Ta capping layer induces changes in the crystalline structures of the underlying films, giving rise to the observed reduction of the interlayer coupling field.

  19. Characteristics of the Surface-Intrinsic Josephson Junction

    Institute of Scientific and Technical Information of China (English)

    YANG Li; XU Wei-wei; YE Su-li; GUO Da-yuan; YOU Li-xing; WU Pei-heng

    2006-01-01

    During the fabrication of intrinsic Josephson junctions (IJJs) with Bi2Sr2CaCu2O8+δ(BSCCO) single crystals,the superconductivity of the surface Cu-O layer is degraded because of a deposited metal film on top of the stack.Thus,the characteristics of the surface junction consisting of the surface Cu-O double layers remarkably differ from those of the junctions deep in the stack,which will be referred to as ordinary IJJs.The electrical transport characteristics of the surface junction,such as I-V,I'c-T,and R-T,show that the critical temperature T'c of the surface junction is always lower than that of ordinary IJJs,and that the change of its critical current I'c with temperature is different from that of ordinary IIJs.Furthermore,by shunting! the surface junction resistively,we are able to observe the AC Josephson effect at 3-mm waveband.

  20. Magnetostatic effects on switching in small magnetic tunnel junctions

    Energy Technology Data Exchange (ETDEWEB)

    Bapna, Mukund; Piotrowski, Stephan K.; Oberdick, Samuel D.; Majetich, Sara A., E-mail: sara@cmu.edu [Physics Department, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213 (United States); Li, Mingen; Chien, C.-L. [Department of Physics and Astronomy, Johns Hopkins University, Baltimore, Maryland 21218 (United States)

    2016-01-11

    Perpendicular CoFeB/MgO/CoFeB magnetic tunnel junctions with diameters under 100 nm are investigated by conductive atomic force microscopy. Minor loops of the tunnel magnetoresistance as a function of applied magnetic field reveal the hysteresis of the soft layer and an offset due to the magnetostatic field of the hard layer. Within the hysteretic region, telegraph noise is observed in the tunnel current. Simulations show that in this range, the net magnetic field in the soft layer is spatially inhomogeneous, and that antiparallel to parallel switching tends to start near the edge, while parallel to antiparallel reversal favors nucleation in the interior of the soft layer. As the diameter of the tunnel junction is decreased, the average magnitude of the magnetostatic field increases, but the spatial inhomogeneity across the soft layer is reduced.

  1. Holliday junction resolvases.

    Science.gov (United States)

    Wyatt, Haley D M; West, Stephen C

    2014-09-02

    Four-way DNA intermediates, called Holliday junctions (HJs), can form during meiotic and mitotic recombination, and their removal is crucial for chromosome segregation. A group of ubiquitous and highly specialized structure-selective endonucleases catalyze the cleavage of HJs into two disconnected DNA duplexes in a reaction called HJ resolution. These enzymes, called HJ resolvases, have been identified in bacteria and their bacteriophages, archaea, and eukaryotes. In this review, we discuss fundamental aspects of the HJ structure and their interaction with junction-resolving enzymes. This is followed by a brief discussion of the eubacterial RuvABC enzymes, which provide the paradigm for HJ resolvases in other organisms. Finally, we review the biochemical and structural properties of some well-characterized resolvases from archaea, bacteriophage, and eukaryotes. Copyright © 2014 Cold Spring Harbor Laboratory Press; all rights reserved.

  2. Wireless Josephson Junction Arrays

    Science.gov (United States)

    Adams, Laura

    2015-03-01

    We report low temperature, microwave transmission measurements on a wireless two- dimensional network of Josephson junction arrays composed of superconductor-insulator -superconductor tunnel junctions. Unlike their biased counterparts, by removing all electrical contacts to the arrays and superfluous microwave components and interconnects in the transmission line, we observe new collective behavior in the transmission spectra. In particular we will show emergent behavior that systematically responds to changes in microwave power at fixed temperature. Likewise we will show the dynamic and collective response of the arrays while tuning the temperature at fixed microwave power. We discuss these spectra in terms of the Berezinskii-Kosterlitz-Thouless phase transition and Shapiro steps. We gratefully acknowledge the support Prof. Steven Anlage at the University of Maryland and Prof. Allen Goldman at the University of Minnesota. Physics and School of Engineering and Applied Sciences.

  3. Effect of residual stress on peak cap stress in arteries.

    Science.gov (United States)

    Vandiver, Rebecca

    2014-10-01

    Vulnerable plaques are a subset of atherosclerotic plaques that are prone to rupture when high stresses occur in the cap. The roles of residual stress, plaque morphology, and cap stiffness on the cap stress are not completely understood. Here, arteries are modeled within the framework of nonlinear elasticity as incompressible cylindrical structures that are residually stressed through differential growth. These structures are assumed to have a nonlinear, anisotropic, hyperelastic response to stresses in the media and adventitia layers and an isotropic response in the intima and necrotic layers. The effect of differential growth on the peak stress is explored in a simple, concentric geometry and it is shown that axial differential growth decreases the peak stress in the inner layer. Furthermore, morphological risk factors are explored. The peak stress in residually stressed cylinders is not greatly affected by changing the thickness of the intima. The thickness of the necrotic layer is shown to be the most important morphological feature that affects the peak stress in a residually stressed vessel.

  4. Self-cleaning effect of sealing caps for infrared hollow fiber delivering pulsed Er:YAG laser light

    Science.gov (United States)

    Shi, Yi Wei; Iwai, Katsumasa; Matsuura, Yuji; Miyagi, Mitsunobu; Jelinkova, Helena

    2006-03-01

    A sealing cap had been proposed as an output device for hollow optical fibers in delivering laser light underwater. Properties of sealing cap were experimentally discussed when used in ablation on soft tissue for Er:YAG laser. A self-cleaning effect of the sealing cap was observed when various targets were used for different laser light power. Debris from pork fat formed a uniform oil layer on the output surface of the cap, and the oil layer is relatively transparent in Er:YAG laser light wavelength band. When the target was pork muscle, almost no debris could attach on the surface of the cap. The self-cleaning effect was more obvious when ablation was conducted underwater because of the protection of the water film between the target and the cap's surface.

  5. North-south geological differences between the residual polar caps on Mars.

    Science.gov (United States)

    Thomas, P C; Malin, M C; Edgett, K S; Carr, M H; Hartmann, W K; Ingersoll, A P; James, P B; Soderblom, L A; Veverka, J; Sullivan, R

    2000-03-09

    Polar processes can be sensitive indicators of global climate, and the geological features associated with polar ice caps can therefore indicate evolution of climate with time. The polar regions on Mars have distinctive morphologic and climatologic features: thick layered deposits, seasonal CO2 frost caps extending to mid latitudes, and near-polar residual frost deposits that survive the summer. The relationship of the seasonal and residual frost caps to the layered deposits has been poorly constrained, mainly by the limited spatial resolution of the available data. In particular, it has not been known if the residual caps represent simple thin frost cover or substantial geologic features. Here we show that the residual cap on the south pole is a distinct geologic unit with striking collapse and erosional topography; this is very different from the residual cap on the north pole, which grades into the underlying layered materials. These findings indicate that the differences between the caps are substantial (rather than reflecting short-lived differences in frost cover), and so support the idea of long-term asymmetry in the polar climates of Mars.

  6. Tantalum oxide barrier in magnetic tunnel junctions

    Institute of Scientific and Technical Information of China (English)

    Guanghua Yu; Tingting Ren; Wei Ji; Jiao Teng; Fengwu Zhu

    2004-01-01

    Tantalum as an insulating barrier can take the place of Al in magnetic tunnel junctions (MTJs). Ta barriers in MTJs were fabricated by natural oxidation. X-ray photoelectron spectroscopy (XPS) was used to characterize the oxidation states of Ta barrier.The experimental results show that the chemical state of tantalum is pure Ta5+ and the thickness of the oxide is 1.3 nm. The unoxidized Ta in the barrier may chemically reacted with NiFe layer which is usually used in MTJs to form an intermetallic compound,NiTa2. A magnetic "dead layer" could be produced in the NiFe/Ta interface. The "dead layer" is likely to influence the spinning electron transport and the magnetoresistance effect.

  7. Nanostructured thin films for multiband-gap silicon triple junction solar cells

    NARCIS (Netherlands)

    Schropp, R.E.I.; Li, H. B. T.; Franken, R.H.; Rath, J.K.; van der Werf, C.H.M.; Schuttauf, J.A.; Stolk, R.L.

    2008-01-01

    By implementing nanostructure in multiband-gap proto-Si/proto-SiGe/nc-Si:H triple junction n–i–p solar cells, a considerable improvement in performance has been achieved. The unalloyed active layers in the top and bottom cell of these triple junction cells are deposited by Hot-Wire CVD. A significan

  8. Robust spin transfer torque in antiferromagnetic tunnel junctions

    KAUST Repository

    Saidaoui, Hamed Ben Mohamed

    2017-04-18

    We theoretically study the current-induced spin torque in antiferromagnetic tunnel junctions, composed of two semi-infinite antiferromagnetic layers separated by a tunnel barrier, in both clean and disordered regimes. We find that the torque enabling electrical manipulation of the Néel antiferromagnetic order parameter is out of plane, ∼n×p, while the torque competing with the antiferromagnetic exchange is in plane, ∼n×(p×n). Here, p and n are the Néel order parameter direction of the reference and free layers, respectively. Their bias dependence shows behavior similar to that in ferromagnetic tunnel junctions, the in-plane torque being mostly linear in bias, while the out-of-plane torque is quadratic. Most importantly, we find that the spin transfer torque in antiferromagnetic tunnel junctions is much more robust against disorder than that in antiferromagnetic metallic spin valves due to the tunneling nature of spin transport.

  9. Influence of thermalization on thermal conduction through molecular junctions: Computational study of PEG oligomers

    Science.gov (United States)

    Pandey, Hari Datt; Leitner, David M.

    2017-08-01

    Thermalization in molecular junctions and the extent to which it mediates thermal transport through the junction are explored and illustrated with computational modeling of polyethylene glycol (PEG) oligomer junctions. We calculate rates of thermalization in the PEG oligomers from 100 K to 600 K and thermal conduction through PEG oligomer interfaces between gold and other materials, including water, motivated in part by photothermal applications of gold nanoparticles capped by PEG oligomers in aqueous and cellular environments. Variation of thermalization rates over a range of oligomer lengths and temperatures reveals striking effects of thermalization on thermal conduction through the junction. The calculated thermalization rates help clarify the scope of applicability of approaches that can be used to predict thermal conduction, e.g., where Fourier's law breaks down and where a Landauer approach is suitable. The rates and nature of vibrational energy transport computed for PEG oligomers are compared with available experimental results.

  10. Electro-Optical Characteristics of P+n In0.53Ga0.47As Hetero-Junction Photodiodes in Large Format Dense Focal Plane Arrays

    Science.gov (United States)

    DeWames, R.; Littleton, R.; Witte, K.; Wichman, A.; Bellotti, E.; Pellegrino, J.

    2015-08-01

    This paper is concerned with focal plane array (FPA) data and use of analytical and three-dimensional numerical simulation methods to determine the physical effects and processes limiting performance. For shallow homojunction P+n designs the temperature dependence of dark current for T InGaAs interface. In this description the fitting property is the effective conductivity, σ eff( T), in mho cm-1. Variation in the data suggests σ eff (300 K) values of 1.2 × 10-11-4.6 × 10-11 mho cm-1). Substrate removal extends the quantum efficiency (QE) spectral band into the visible region. However, dead-layer effects limit the QE to 10% at a wavelength of 0.5 μm. For starlight-no moon illumination conditions, the signal-to-noise ratio is estimated to be 50 at an operating temperature of 300 K. A major result of the 3D numerical simulation of the device is the prediction of a perimeter G-R current not associated with the properties of the metallurgical interface. Another is the prediction that for a junction positioned in the larger band gap InP cap layer the QE is bias-dependent and that a relatively large reverse bias ≥0.9 V is needed for the QE to saturate to the shallow homojunction value. At this higher bias the dark current is larger than the shallow homojunction value. The 3D numerical model and the analytical model agree in predicting and explaining the measured radiatively limited diffusion current originating at the n-side of the junction. The calculations of the area-dependent G-R current for the condition studied are also in agreement. Unique advantages of the 3D numerical simulation are the ability to mimic real device structures, achieve deeper understanding of the real physical effects associated with the various methods of junction formation, and predict how device designs will function.

  11. Insular dentin formation pattern in human odontogenesis in relation to the scalloped dentino-enamel junction.

    Science.gov (United States)

    Radlanski, Ralf J; Renz, Herbert

    2007-01-01

    This study is a first report on the modality of early dentin formation in respect to the scalloped pattern of the dentino-enamel junction (DEJ). We applied scanning electron microscopy (SEM), transmission electron microscopy (TEM), histological serial sections, and three-dimensional (3D) reconstructions. TEM and SEM showed scallops and secondary scallops on the DEJ of deciduous dental primordia and on deciduous teeth with the enamel cap removed. This peculiar outline of the DEJ requires a specific dentin formation pattern; histological sections showed that dentin formation began at the brims of the scallops, seen as triangular spikes in serial sections. The dentin formation front was not uniform; instead, it was characterized by multiple, insular forming centers, as revealed by our 3D reconstructions. As thicker dentin layers formed, the islands became confluent. Factors are discussed, which may lead to crimpling of the inner enamel epithelium, and maintained as the scalloped pattern of the DEJ develops. Signaling patterns in accordance with the insular dentin formation are unknown so far.

  12. A way for studying the impact of PEDOT:PSS interface layer on carrier transport in PCDTBT:PC{sub 71}BM bulk hetero junction solar cells by electric field induced optical second harmonic generation measurement

    Energy Technology Data Exchange (ETDEWEB)

    Ahmad, Zubair, E-mail: zubairtarar@um.edu.my; Abdullah, Shahino Mah; Sulaiman, Khaulah [Low Dimensional Materials Research Centre (LDMRC), Department of Physics, Faculty of Science, University of Malaya, 50603 Kuala Lumpur (Malaysia); Taguchi, Dai; Iwamoto, Mitsumasa [Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 O-Okayama, Meguro-ku, Tokyo 152-8552 (Japan)

    2015-04-28

    Electric-field-induced optical second-harmonic generation (EFISHG) measurement was employed to study the impact of poly(3,4-ethylenedioxythiophene)-polystyrene sulfonate (PEDOT:PSS) interface layer on the carrier transport mechanism of the PCDTBT:PC{sub 71}BM bulk heterojunction (BHJ) organic solar cells (OSCs). We revealed that the electric fields in the PCDTBT and PC{sub 71}BM were allowed to be measured individually by choosing fundamental laser wavelengths of 1000 nm and 1060 nm, respectively, in dark and under illumination. The results showed that the direction of the internal electric fields in the PCDTBT:PC{sub 71}BM BHJ layer is reversed by introducing the PEDOT:PSS layer, and this results in longer electron transport time in the BHJ layer. We conclude that TR-EFISHG can be used as a novel way for studying the impact of interfacial layer on the transport of electrons and holes in the bulk-heterojunction OSCs.

  13. Creating and maintaining a gas cap in tar sands formations

    Energy Technology Data Exchange (ETDEWEB)

    Vinegar, Harold J. (Bellaire, TX); Karanikas, John Michael (Houston, TX); Dinkoruk, Deniz Sumnu (Houston, TX); Wellington, Scott Lee (Bellaire, TX)

    2010-03-16

    Methods for treating a tar sands formation are disclosed herein. Methods for treating a tar sands formation may include providing heat to at least part of a hydrocarbon layer in the formation from one or more heaters located in the formation. Pressure may be allowed to increase in an upper portion of the formation to provide a gas cap in the upper portion. At least some hydrocarbons are produced from a lower portion of the formation.

  14. The influence of microwave irradiation power on current voltage characteristics of intrinsic Josephson junctions

    Science.gov (United States)

    Shukrinov, Yu M.; Mans, M.; Scherbel, J.; Seidel, P.

    2007-02-01

    The current-voltage characteristics of a micrometre bridge of intrinsic Josephson junctions under microwave irradiation are studied. The collective switching of the group of four junctions splits up as the AC signal amplitude is gradually increased. The switching current of the remaining group of junctions is increased with increasing radiation power. We consider that microwave irradiation injects an additional quasiparticle current into the Josephson junction array. We use ideas of breakdown of quasineutrality and quasiparticle charge imbalance in the superconducting layers and explain the experimental results by the competition between the 'current effect' and the effect of suppression of the switching current by irradiation.

  15. The influence of microwave irradiation power on current-voltage characteristics of intrinsic Josephson junctions

    Energy Technology Data Exchange (ETDEWEB)

    Shukrinov, Yu M [BLTP, JINR, Dubna, Moscow Region, 141980 (Russian Federation); Mans, M [Institut fur Festkoerperphysik, Friedrich-Schiller-Universitaet Jena, D-07743 Jena (Germany); Scherbel, J [Institut fur Festkoerperphysik, Friedrich-Schiller-Universitaet Jena, D-07743 Jena (Germany); Seidel, P [Institut fur Festkoerperphysik, Friedrich-Schiller-Universitaet Jena, D-07743 Jena (Germany)

    2007-02-15

    The current-voltage characteristics of a micrometre bridge of intrinsic Josephson junctions under microwave irradiation are studied. The collective switching of the group of four junctions splits up as the AC signal amplitude is gradually increased. The switching current of the remaining group of junctions is increased with increasing radiation power. We consider that microwave irradiation injects an additional quasiparticle current into the Josephson junction array. We use ideas of breakdown of quasineutrality and quasiparticle charge imbalance in the superconducting layers and explain the experimental results by the competition between the 'current effect' and the effect of suppression of the switching current by irradiation.

  16. Numerical simulations of flux flow in stacked Josephson junctions

    DEFF Research Database (Denmark)

    Madsen, Søren Peder; Pedersen, Niels Falsig

    2005-01-01

    We numerically investigate Josephson vortex flux flow states in stacked Josephson junctions, motivated by recent experiments trying to observe the vortices in a square vortex lattice when a magnetic field is applied to layered high-Tc superconductors of the Bi2Sr2CaCu2Ox type. By extensive...

  17. Supercurrent reversal in Josephson junctions based on bilayer graphene flakes

    Science.gov (United States)

    Rameshti, Babak Zare; Zareyan, Malek; Moghaddam, Ali G.

    2015-08-01

    We investigate the Josephson effect in a bilayer graphene flake contacted by two monolayer sheets deposited by superconducting electrodes. It is found that when the electrodes are attached to the different layers of the bilayer, the Josephson current is in a π state, if the bilayer region is undoped and there is no vertical bias. Applying doping or bias to the junction reveals π -0 transitions which can be controlled by varying the temperature and the junction length. The supercurrent reversal here is very different from the ferromagnetic Josephson junctions where the spin degree of freedom plays the key role. We argue that the scattering processes accompanied by layer and sublattice index change give rise to the scattering phases, the effect of which varies with doping and bias. Such scattering phases are responsible for the π -0 transitions. On the other hand, if both of the electrodes are coupled to the same layer of the flake or the flake has AA stacking instead of common AB, the junction will be always in 0 state since the layer or sublattice index is not changed.

  18. Influence of the buffer-layer on the tunnel barrier quality in CoFeB/MgO/CoFeB magnetic tunnel junctions on the tunnel magneto resistance (TMR)

    Energy Technology Data Exchange (ETDEWEB)

    Zbarsky, Vladyslav; Walter, Marvin; Eilers, Gerrit; Leutenantsmeyer, Johannes Christian; Muenzenberg, Markus [I. Physikalisches Institut, Georg-August-Universitaet Goettingen, 37077 Goettingen (Germany); Peretzki, Patrick; Seibt, Michael [IV. Physikalisches Institut, Georg-August-Universitaet Goettingen, 37077 Goettingen (Germany)

    2011-07-01

    The optimization of MTJs is necessary for increasing of TMR and therefore is very important for the production of MRAM devices. The quality of the tunnel barrier of our CoFeB/MgO/CoFeB MTJs is essential for getting high TMR. For this reason we investigate the influence of roughness of the MgO layer on the TMR. Another important parameter which we could optimize is the choice and preparation of the buffer-layer. For example we compared two sorts of Ta buffer-layers: prepared via magnetron sputtering and via e-beam evaporation. Already by optimizing these two parameters we increase the TMR from 80% to above 200%. In addition we show the investigations of the influence of the annealing temperatures and annealing duration on the TMR. Fast annealing time prevents diffusion, however for short annealing time no full crystallization is observed.

  19. Breathing Charge Density Waves in Intrinsic Josephson Junctions

    OpenAIRE

    Shukrinov, Yu M.; Abdelhafiz, H.

    2013-01-01

    We demonstrate the creation of a charge density wave (CDW) along a stack of coupled Josephson junctions in layered superconductors. Electric charge in each superconducting layer oscillates around some average value, forming a breathing CDW. We show the transformation of a longitudinal plasma wave to CDW in the state corresponding to the outermost branch. Transitions between different types of CDW's related to the inner branches of current voltage characteristics are demonstrated. The effect o...

  20. FeGa based tunneling magnetoresistance junctions and strain sensors

    OpenAIRE

    Thajudin, Ahmed Fazir

    2012-01-01

    Tunnel magnetoresistance (TMR) and inverse magnetostriction based strain gauges have gained immense importance due to their high spatial resolution and extremely high gauge factors. A TMR junction comprises of two ferromagnetic electrodes separated by an insulating barrier layer. One of the ferromagnetic layer is soft magnetic which is free to rotate its magnetization under external magnetic field, the other ferromagnet is hard magnetic and is stable under the same external field. An intentio...

  1. Catastrophic antiphospholipid syndrome (CAPS): update from the 'CAPS Registry'.

    Science.gov (United States)

    Cervera, R

    2010-04-01

    Although less than 1% of patients with the antiphospholipid syndrome (APS) develop the catastrophic variant, its potentially lethal outcome emphasizes its importance in clinical medicine today. However, the rarity of this variant makes it extraordinarily difficult to study in any systematic way. In order to put together all of the published case reports as well as the new diagnosed cases from all over the world, an international registry of patients with catastrophic APS (CAPS Registry) was created in 2000 by the European Forum on Antiphospholipid Antibodies (see http://www.med.ub.es/MIMMUN/FORUM/CAPS.HTM). Currently, it documents the entire clinical, laboratory and therapeutic data of more than 300 patients whose data has been fully registered.

  2. Synaptic Interactome Mining Reveals p140Cap as a New Hub for PSD Proteins Involved in Psychiatric and Neurological Disorders

    Science.gov (United States)

    Alfieri, Annalisa; Sorokina, Oksana; Adrait, Annie; Angelini, Costanza; Russo, Isabella; Morellato, Alessandro; Matteoli, Michela; Menna, Elisabetta; Boeri Erba, Elisabetta; McLean, Colin; Armstrong, J. Douglas; Ala, Ugo; Buxbaum, Joseph D.; Brusco, Alfredo; Couté, Yohann; De Rubeis, Silvia; Turco, Emilia; Defilippi, Paola

    2017-01-01

    Altered synaptic function has been associated with neurological and psychiatric conditions including intellectual disability, schizophrenia and autism spectrum disorder (ASD). Amongst the recently discovered synaptic proteins is p140Cap, an adaptor that localizes at dendritic spines and regulates their maturation and physiology. We recently showed that p140Cap knockout mice have cognitive deficits, impaired long-term potentiation (LTP) and long-term depression (LTD), and immature, filopodia-like dendritic spines. Only a few p140Cap interacting proteins have been identified in the brain and the molecular complexes and pathways underlying p140Cap synaptic function are largely unknown. Here, we isolated and characterized the p140Cap synaptic interactome by co-immunoprecipitation from crude mouse synaptosomes, followed by mass spectrometry-based proteomics. We identified 351 p140Cap interactors and found that they cluster to sub complexes mostly located in the postsynaptic density (PSD). p140Cap interactors converge on key synaptic processes, including transmission across chemical synapses, actin cytoskeleton remodeling and cell-cell junction organization. Gene co-expression data further support convergent functions: the p140Cap interactors are tightly co-expressed with each other and with p140Cap. Importantly, the p140Cap interactome and its co-expression network show strong enrichment in genes associated with schizophrenia, autism, bipolar disorder, intellectual disability and epilepsy, supporting synaptic dysfunction as a shared biological feature in brain diseases. Overall, our data provide novel insights into the molecular organization of the synapse and indicate that p140Cap acts as a hub for postsynaptic complexes relevant to psychiatric and neurological disorders. PMID:28713243

  3. 21 CFR 884.5250 - Cervical cap.

    Science.gov (United States)

    2010-04-01

    ... 21 Food and Drugs 8 2010-04-01 2010-04-01 false Cervical cap. 884.5250 Section 884.5250 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) MEDICAL DEVICES... cap. (a) Identification. A cervical cap is a flexible cuplike receptacle that fits over the cervix to...

  4. 21 CFR 888.3000 - Bone cap.

    Science.gov (United States)

    2010-04-01

    ... 21 Food and Drugs 8 2010-04-01 2010-04-01 false Bone cap. 888.3000 Section 888.3000 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) MEDICAL DEVICES ORTHOPEDIC DEVICES Prosthetic Devices § 888.3000 Bone cap. (a) Identification. A bone cap is a mushroom...

  5. CMS end-cap yoke detector

    CERN Multimedia

    Patrice Loïez

    2002-01-01

    The magnetic flux generated by the superconducting coil in the CMS detector is returned via an iron yoke comprising three end-cap discs at each end (end-cap yoke) and five concentric cylinders (barrel yoke). This picture shows the first of three end-cap discs (red) seen through the outer cylinder of the vacuum tank which will house the superconducting coil.

  6. ATLAS End Cap toroid in upstanding position

    CERN Multimedia

    2005-01-01

    End Cap toroid The ATLAS End Cap toroid weights 240-ton and is 12-m diameter high. The parts of this vacuum vessel had to be integrated and tested so that End Cap Toroid has no leaks. After that it could be cooled down to 80 K.

  7. Motion of polar cap arcs

    Science.gov (United States)

    Hosokawa, K.; Moen, J. I.; Shiokawa, K.; Otsuka, Y.

    2011-01-01

    A statistics of motion of polar cap arcs is conducted by using 5 years of optical data from an all-sky imager at Resolute Bay, Canada (74.73°N, 265.07°E). We identified 743 arcs by using an automated arc detection algorithm and statistically examined their moving velocities as estimated by the method of Hosokawa et al. (2006). The number of the arcs studied is about 5 times larger than that in the previous statistics of polar cap arcs by Valladares et al. (1994); thus, we could expect to obtain more statistically significant results. Polar cap arcs are found to fall into two distinct categories: the By-dependent and By-independent arcs. The motion of the former arcs follows the rule reported by Valladares et al. (1994), who showed that stable polar cap arcs move in the direction of the interplanetary magnetic field (IMF) By. About two thirds of the arcs during northward IMF conditions belong to this category. The latter arcs always move poleward irrespective of the sign of the IMF By, which possibly correspond to the poleward moving arcs in the morning side reported by Shiokawa et al. (1997). At least one third of the arcs belong to this category. The By-dependent arcs tend to move faster when the magnitude of the IMF By is larger, suggesting that the transport of open flux by lobe reconnection from one polar cap compartment to the other controls their motion. In contrast, the speed of the By-independent arcs does not correlate with the magnitude of the By. The motions of both the By-dependent and By-independent arcs are most probably caused by the magnetospheric convection. Convection in the region of By-dependent arcs is affected by the IMF By, which indicates that their sources may be on open field lines or in the closed magnetosphere adjacent to the open-closed boundary, whereas By-independent arcs seem to be well on closed field lines. Hence, the magnetospheric source of the two types of arc may be different. This implies that the mechanisms causing the

  8. Oxygen adsorption at noble metal/TiO2 junctions

    Science.gov (United States)

    Hossein-Babaei, F.; Alaei-Sheini, Navid; Lajvardi, Mehdi M.

    2016-03-01

    Electric conduction in titanium dioxide is known to be oxygen sensitive and the conductivity of a TiO2 ceramic body is determined mainly by the concentration of its naturally occurring oxygen vacancy. Recently, fabrications and electronic features of a number of noble metal/TiO2-based electronic devices, such as solar cells, UV detectors, gas sensors and memristive devices have been demonstrated. Here, we investigate the effect of oxygen adsorption at the noble metal/TiO2 junction in such devices, and show the potentials of these junctions in chemical sensor fabrication. The polycrystalline, poly-phase TiO2 layers are grown by the selective and controlled oxidation of titanium thin films vacuum deposited on silica substrates. Noble metal thin films are deposited on the oxide layers by physical vapor deposition. Current-voltage (I-V) diagrams of the fabricated devices are studied for Ag/, Au/, and Pt/TiO2 samples. The raw samples show no junction energy barrier. After a thermal annealing in air at 250° C, I-V diagrams change drastically. The annealed samples demonstrate highly non-linear I-V indicating the formation of high Schottky energy barriers at the noble metal/TiO2 junctions. The phenomenon is described based on the effect of the oxygen atoms adsorbed at the junction.

  9. T-Cap Pull-Off and Bending Behavior for Stitched Structure

    Science.gov (United States)

    Lovejoy, Andrew E.; Leone, Frank A., Jr.

    2016-01-01

    The Pultruded Rod Stitched Efficient Unitized Structure (PRSEUS) is a structural concept that was developed by The Boeing Company to address the complex structural design aspects associated with a pressurized hybrid wing body aircraft configuration. An important design feature required for assembly is the integrally stitched T-cap, which provides connectivity of the corner (orthogonal) joint between adjacent panels. A series of tests were conducted on T-cap test articles, with and without a rod stiffener penetrating the T-cap web, under tension (pull-off) and bending loads. Three designs were tested, including the baseline design used in largescale test articles. The baseline had only the manufacturing stitch row adjacent to the fillet at the base of the T-cap web. Two new designs added stitching rows to the T-cap web at either 0.5- or 1.0-inch spacing along the height of the web. Testing was conducted at NASA Langley Research Center to determine the behavior of the T-cap region resulting from the applied loading. Results show that stitching arrests the initial delamination failures so that the maximum strength capability exceeds the load at which the initial delaminations develop. However, it was seen that the added web stitching had very little effect on the initial delamination failure load, but actually decreased the initial delamination failure load for tension loading of test articles without a stiffener passing through the web. Additionally, the added web stitching only increased the maximum load capability by between 1% and 12.5%. The presence of the stiffener, however, did increase the initial and maximum loads for both tension and bending loading as compared to the stringerless baseline design. Based on the results of the few samples tested, the additional stitching in the T-cap web showed little advantage over the baseline design in terms of structural failure at the T-cap web/skin junction for the current test articles.

  10. Tension and Bending Testing of an Integral T-Cap for Stitched Composite Airframe Joints

    Science.gov (United States)

    Lovejoy, Andrew E.; Leone, Frank A., Jr.

    2016-01-01

    The Pultruded Rod Stitched Efficient Unitized Structure (PRSEUS) is a structural concept that was developed by The Boeing Company to address the complex structural design aspects associated with a pressurized hybrid wing body aircraft configuration. An important design feature required for assembly is the integrally stitched T-cap, which provides connectivity of the corner (orthogonal) joint between adjacent panels. A series of tests were conducted on T-cap test articles, with and without a rod stiffener penetrating the T-cap web, under tension (pull-off) and bending loads. Three designs were tested, including the baseline design used in large-scale test articles. The baseline had only the manufacturing stitch row adjacent to the fillet at the base of the T-cap web. Two new designs added stitching rows to the T-cap web at either 0.5- or 1.0-inch spacing along the height of the web. Testing was conducted at NASA Langley Research Center to determine the behavior of the T-cap region resulting from the applied loading. Results show that stitching arrests the initial delamination failures so that the maximum strength capability exceeds the load at which the initial delaminations develop. However, it was seen that the added web stitching had very little effect on the initial delamination failure load, but actually decreased the initial delamination failure load for tension loading of test articles without a stiffener passing through the web. Additionally, the added web stitching only increased the maximum load capability by between 1% and 12.5%. The presence of the stiffener, however, did increase the initial and maximum loads for both tension and bending loading as compared to the stringerless baseline design. Based on the results of the few samples tested, the additional stitching in the T-cap web showed little advantage over the baseline design in terms of structural failure at the T-cap web/skin junction for the current test articles.

  11. Mixing in T-junctions

    NARCIS (Netherlands)

    Kok, Jacobus B.W.; van der Wal, S.

    1996-01-01

    The transport processes that are involved in the mixing of two gases in a T-junction mixer are investigated. The turbulent flow field is calculated for the T-junction with the k- turbulence model by FLOW3D. In the mathematical model the transport of species is described with a mixture fraction

  12. Reduction of Gap Junctional Conductance by Microinjection of Antibodies against the 27-kDa Liver Gap Junction Polypeptide

    Science.gov (United States)

    Hertzberg, E. L.; Spray, D. C.; Bennett, M. V. L.

    1985-04-01

    Antibody raised against isolated rat liver gap junctions was microinjected into coupled cells in culture to assess its influence on gap junctional conductance. A rapid inhibition of fluorescent dye transfer and electrical coupling was produced in pairs of freshly dissociated adult rat hepatocytes and myocardial cells as well as in pairs of superior cervical ganglion neurons from neonatal rats cultured under conditions in which electrotonic synapses form. The antibodies have been shown by indirect immunofluorescence to bind to punctate regions of the plasma membrane in liver. By immunoreplica analysis of rat liver homogenates, plasma membranes, and isolated gap junctions resolved on NaDodSO4/polyacrylamide gels, binding was shown to be specific for the 27-kDa major polypeptide of gap junctions. This and similar antibodies should provide a tool for further investigation of the role of cell-cell communication mediated by gap junctions and indicate that immunologically similar polypeptides comprise gap junctions in adult mammalian cells derived from all three germ layers.

  13. Effect of interjunction coupling on superconducting current and charge correlations in intrinsic Josephson junctions

    Science.gov (United States)

    Shukrinov, Yu. M.; Hamdipour, M.; Kolahchi, M. R.

    2009-07-01

    Charge formations on superconducting layers and creation of the longitudinal plasma wave in the stack of intrinsic Josephson junctions change crucially the superconducting current through the stack. Investigation of the correlations of superconducting currents in neighboring Josephson junctions and the charge correlations in neighboring superconducting layers allows us to predict the additional features in the current-voltage characteristics. The charge autocorrelation functions clearly demonstrate the difference between harmonic and chaotic behavior in the breakpoint region. Use of the correlation functions gives us a powerful method for the analysis of the current-voltage characteristics of coupled Josephson junctions.

  14. Spectroscopy of Deep Traps in Cu2S-CdS Junction Structures

    Directory of Open Access Journals (Sweden)

    Eugenijus Gaubas

    2012-12-01

    Full Text Available Cu2S-CdS junctions of the polycrystalline material layers have been examined by combining the capacitance deep level transient spectroscopy technique together with white LED light additional illumination (C-DLTS-WL and the photo-ionization spectroscopy (PIS implemented by the photocurrent probing. Three types of junction structures, separated by using the barrier capacitance characteristics of the junctions and correlated with XRD distinguished precipitates of the polycrystalline layers, exhibit different deep trap spectra within CdS substrates.

  15. Model for Formation of Martian Residual Cap Depressions (Swiss Cheese)

    Science.gov (United States)

    Byrne, S.; Ingersoll, A. P.

    2001-12-01

    In an effort for explain the formation of the `Swiss-cheese' terrain visible on the southern residual cap of Mars (Thomas et al., Nature, 404,2000); we have developed a radiative model to follow the growth/decay of an initial depression due to sublimation/condensation of carbon dioxide. The pits making up this terrain have many distinctive features; they are shallow (~10m deep), with steep walls and flat floors and contain an interior moat that runs along the bottom of the walls. Their diameters range from a few 10's of meters to a kilometer. The model accounts for incident sunlight, emitted thermal radiation, and scattered short and long wave radiation. We have included the effects of a layer of water ice placed under the carbon dioxide at adjustable depth. The water ice layer is free to store heat during the summer (when the carbon dioxide has been removed) through subsurface diffusion of heat. Release of this heat at the end of the summer can inhibit frost formation. We have investigated many cases involving pure dry ice with constant albedo, albedo as a function of insolation, and differing albedo for fresh and residual frost (the latter has lower albedo). In most cases the initial depressions heal themselves and disappear into the surrounding terrain. Cases involving the layer of water ice provide a much closer approximation to the shape of the observed features (especially the flat bottoms). A problem arises of how much exposed water ice we can have during the summer season and still have temperatures averaged over the footprint of the Thermal Emission Spectrometer be close to the carbon dioxide sublimation temperatures. The depth to the water ice layer is a strong controlling factor of the evolution of depression shape and depth in our model. Matching this shape with observations yields important information regarding the depth to any putative water ice layer within the residual cap itself. It is known from laboratory measurements that carbon dioxide is too

  16. Benzonorbornadiene end caps for PMR resins

    Science.gov (United States)

    Panigot, Michael J.; Waters, John F.; Varde, Uday; Sutter, James K.; Sukenik, Chaim N.

    1992-01-01

    Several ortho-disubstituted benzonorbornadiene derivatives are described. These molecules contain acid, ester, or anhydride functionality permitting their use as end caps in PMR (polymerization of monomer reactants) polyimide systems. The replacement of the currently used norbornenyl end caps with benzonorbornadienyl end caps affords resins of increased aromatic content. It also allows evaluation of some mechanistic aspects of PMR cross-linking. Initial testing of N-phenylimide model compounds and of actual resin formulations using the benzonorbornadienyl end cap reveals that they undergo efficient thermal crosslinking to give oligomers with physical properties and thermal stability comparable to commercial norbornene-end-capped PMR systems.

  17. Realization of Ultraviolet Electroluminescence from ZnO Homo junction Fabricated on Silicon Substrate with p-Type ZnO:N Layer Formed by Radical N2O Doping

    Institute of Scientific and Technical Information of China (English)

    SUN Jing-Chang; LIANG Hong-Wei; ZHAO Jian-Ze; BIAN Ji-Ming; FENG Qiu-Ju; WANG Jing-Wei; ZHAO Zi-Wen; DU Guo-Tong

    2008-01-01

    @@ ZnO homojunction light-emitting diodes are fabricated on Si(100) substrates by plasma assisted metal organic chemical vapour deposition, A p-type layer of nitrogen-doped ZnO film is formed using radical N2O as the acceptor precursor.The n-type ZnO layer is composed of un-doped ZnO film.The device exhibits desirable rectifying behaviour with a turn-on voltage of 3.3 V and a reverse breakdown voltage higher than 6 V.Distinct electroluminescence emissions centred at 395nm and 49Ohm are detected from this device at forvcard current higher than 20mA at room temperature.

  18. Annealing free magnetic tunnel junction sensors

    Science.gov (United States)

    Knudde, S.; Leitao, D. C.; Cardoso, S.; Freitas, P. P.

    2017-04-01

    Annealing is a major step in the fabrication of magnetic tunnel junctions (MTJs). It sets the exchange bias between the pinned and antiferromagnetic layers, and helps to increase the tunnel magnetoresistance (TMR) in both amorphous and crystalline junctions. Recent research on MTJs has focused on MgO-based structures due to their high TMR. However, the strict process control and mandatory annealing step can limit the scope of the application of these structures as sensors. In this paper, we present AlOx-based MTJs that are produced by ion beam sputtering and remote plasma oxidation and show optimum transport properties with no annealing. The microfabricated devices show TMR values of up to 35% and using NiFe/CoFeB free layers provides tunable linear ranges, leading to coercivity-free linear responses with sensitivities of up to 5.5%/mT. The top-pinned synthetic antiferromagnetic reference shows a stability of about 30 mT in the microfabricated devices. Sensors with linear ranges of up to 60 mT are demonstrated. This paves the way for the integration of MTJ sensors in heat-sensitive applications such as flexible substrates, or for the design of low-footprint on-chip multiaxial sensing devices.

  19. Semiconductor device PN junction fabrication using optical processing of amorphous semiconductor material

    Science.gov (United States)

    Sopori, Bhushan; Rangappan, Anikara

    2014-11-25

    Systems and methods for semiconductor device PN junction fabrication are provided. In one embodiment, a method for fabricating an electrical device having a P-N junction comprises: depositing a layer of amorphous semiconductor material onto a crystalline semiconductor base, wherein the crystalline semiconductor base comprises a crystalline phase of a same semiconductor as the amorphous layer; and growing the layer of amorphous semiconductor material into a layer of crystalline semiconductor material that is epitaxially matched to the lattice structure of the crystalline semiconductor base by applying an optical energy that penetrates at least the amorphous semiconductor material.

  20. Diffusion and electrical behavior of Al implanted into capped Si

    Energy Technology Data Exchange (ETDEWEB)

    Scandurra, A. (Consorzio Catania Ricerche, Catania (Italy)); Galvagno, G. (Istituto di Metodologie e Tecnologie per la Microelettronica-CNR, Catania (Italy)); Raineri, V. (Univ. di Catania (Italy). Dipartimento di Fisica); Frisina, F. (ST-Microelectronics, Catania (Italy)); Torrisi, A. (Univ. di Catania (Italy). Dipartimento di Scienze Chimiche)

    1993-07-01

    The diffusion and the electrical behavior of Al implanted in the dose of 1 x 10[sup 13] to 5 x 10[sup 15] cm[sup [minus]2] at 300 keV in capped and uncapped Si is investigated. The Al-based precipitates which are formed when Al concentration exceeds its solid solubility in Si are electrically inactive. The out-diffusion phenomenon that is always present in uncapped samples reduces the Al dose diffused into Si substrate. A study on the electrical activity of Al implanted in Si through SiO[sub 2], Si[sub 3]N[sub 4], and Si[sub 3]N[sub 4]/SiO[sub 2] capping films also is presented. In these capped samples Al segregation in SiO[sub 2] layer occurs. The electrically active doses are small and comparable to that of uncapped samples. The authors studied the diffusivity of Al in bulk SiO[sub 2] and Si[sub 3]N[sub 4] at 1,200 C. The fast Al diffusion through SiO[sub 2] thin layers is driven by a chemical reaction between Al and SiO[sub 2] starting from the SiO[sub 2]/Si interface.

  1. Tunnel junctions for InP-on-Si solar cells

    Science.gov (United States)

    Keavney, C.; Vernon, S.; Haven, V.

    1991-01-01

    Growing, by metalorganic chemical vapor deposition, a tunnel junction is described, which makes possible and ohmic back contact in an n-on-p InP solar cell on a silicon substrate. The junction between heavily doped layers of p-type InGaAs and n-type InP shows resistance low enough not to affect the performance of these cells. InP solar cells made on n-type Si substrates with this structure were measured with an efficiency of 9.9 percent. Controls using p-type GaAs substrates showed no significant difference in cell performance, indicating that the resistance associated with the tunnel junction is less than about 0.1 ohm/sq cm.

  2. Fabrication of High-Quality Niobium Superconducting Tunnel Junctions

    Institute of Scientific and Technical Information of China (English)

    XU Qin-Yin; CAO Chun-Hai; LI Meng-Yue; JIANG Yi; ZHA Shi-Tong; KANG Lin; XU Wei-Wei; CHEN Jian; WU Pei-Heng

    2011-01-01

    @@ For high-quality superconducting tunnel junctions(STJS), it is necessary to reduce leakage current as much as possible.We describe the fabrication of niobium STJs using the selective niobium(Nb) etching process and various ways to minimize the leakage current.The experiment shows that the leakage current mainly comes from shorts in the tunnel barrier layer rather than those around the junction edges.Through systematic analysis of the thin film stress, surface morphology and modified junction structures, we fabricate high-quality Nb STJs with a gap voltage of 2.8 mV and a leakage current at 1 m V as low as 8.1 % and 0.023% at 4.2K and 0.3 K, respectively.

  3. Pn/sup +/ junction in an implanted electroactive polymer: poly(paraphenylene)

    Energy Technology Data Exchange (ETDEWEB)

    Moliton, A.; Duroux, J.L.; Ratier, B.; Froyer, G.

    1988-03-31

    We have recently shown that specific and stable n or p doping may be obtained on poly(paraphenylene) providing moderate implantation conditions with appropriate ions are used. Here we describe a pn/sup +/-junction made in intrinsic insulating poly(paraphenylene) (sigma < 10/sup -12/ ..cap omega../sup -1/ cm/sup -1/) by implantation (E approx. = 50 keV) of alkali metal ions (essentially caesium for n doping) and halogen (iodine for p doping).

  4. Capping of rare earth silicide nanowires on Si(001)

    Energy Technology Data Exchange (ETDEWEB)

    Appelfeller, Stephan; Franz, Martin; Kubicki, Milan; Dähne, Mario [Institut für Festkörperphysik, Technische Universität Berlin, 10623 Berlin (Germany); Reiß, Paul; Niermann, Tore; Lehmann, Michael [Institut für Optik und Atomare Physik, Technische Universität Berlin, 10623 Berlin (Germany); Schubert, Markus Andreas [IHP–Leibniz-Institut für innovative Mikroelektronik, 15236 Frankfurt (Oder) (Germany)

    2016-01-04

    The capping of Tb and Dy silicide nanowires grown on Si(001) was studied using scanning tunneling microscopy and cross-sectional high-resolution transmission electron microscopy. Several nanometers thick amorphous Si films deposited at room temperature allow an even capping, while the nanowires maintain their original structural properties. Subsequent recrystallization by thermal annealing leads to more compact nanowire structures and to troughs in the Si layer above the nanowires, which may even reach down to the nanowires in the case of thin Si films, as well as to V-shaped stacking faults forming along (111) lattice planes. This behavior is related to strain due to the lattice mismatch between the Si overlayer and the nanowires.

  5. Regulation of the synthesis of barley aleurone. cap alpha. -amylase by gibberellic acid and calcium ions

    Energy Technology Data Exchange (ETDEWEB)

    Jones, R.L.; Carbonell, J.

    1984-09-01

    The effects of gibberellic acid (GA/sub 3/) and calcium ions on the production of ..cap alpha..-amylase and acid phosphatase by isolated aleurone layers of barley (Hordeum vulgare L. cv Himalaya) were studied. Aleurone layers not previously exposed to GA/sub 3/ or CA/sup 2 +/ show qualitative and quantitative changes in hydrolase production following incubation in either GA/sub 3/ or CA/sup 2 +/ or both. In cubation in H/sub 2/O or CA/sup 2 +/ results in the production of low levels of ..cap alpha..-amylase or acid phosphatase. The addition of GA/sub 3/ to the incubation medium causes 10- to 20-fold increase in the amounts of these enzymes released from the tissue, and addition of CA/sup 2 +/ at 10 millimolar causes a further 8- to 9-fold increase in ..cap alpha..-amylase release and a 75% increase in phosphatase release. Production of ..cap alpha..-amylase isoenzymes is also modified by the levels of GA/sub 3/ and CA/sup 2 +/ in the incubation medium. ..cap alpha..-amylase 2 is produced under all conditions of incubation, while ..cap alpha..-amylase 1 appears only when layers are incubated in GA/sub 3/ or GA/sub 3/ plus CA/sup 2 +/. The synthesis of ..cap alpha..-amylases 3 and 4 requires the presence of both GA/sub 3/ and CA/sup 2 +/ in the incubation medium. Laurell rocket immunoelectrophoresis shows that two distinct groups of ..cap alpha..-amylase antigens are present in incubation media of aleurone layers incubated with both GA/sub 3/ and CA/sup 2 +/, while only one group of antigens is found in media of layers incubated in GA/sub 3/ alone. Strontium ions can be substituted for CA/sup 2 +/ in increasing hydrolase production, although higher concentrations of Sr/sup 2 +/ are requried for maximal response. We conclude that GA/sub 3/ is required for the production of ..cap alpha..-amylase 1 and that both GA/sub 3/ and either CA/sup 2 +/ or Sr/sup 2 +/ are required for the production of isoenzymes 3 and 4 of barley aleurone ..cap alpha..-amylase. 22 references, 8

  6. Imaging of cervicothoracic junction trauma

    Directory of Open Access Journals (Sweden)

    Wongwaisayawan S

    2013-01-01

    Full Text Available Sirote Wongwaisayawan,1 Ruedeekorn Suwannanon,2 Rathachai Kaewlai11Department of Radiology, Ramathibodi Hospital and Mahidol University, Bangkok, Thailand; 2Department of Radiology, Faculty of Medicine, Prince of Songkla University, Hat Yai, ThailandAbstract: Cervicothoracic junction trauma is an important cause of morbidity and mortality in trauma patients. Imaging has played an important role in identifying injuries and guiding appropriate, timely therapy. Computed tomography is currently a method of choice for diagnosing cervicothoracic junction trauma, in which the pattern of injuries often suggests possible mechanisms and potential injuries. In this article, the authors describe and illustrate common and uncommon injuries that can occur in the cervicothoracic junction.Keywords: cervicothoracic junction, cervical spine, trauma, imaging, radiology

  7. Ginzburg–Landau theory of mesoscopic multi-band Josephson junctions

    Energy Technology Data Exchange (ETDEWEB)

    Romeo, F.; De Luca, R., E-mail: rdeluca@unisa.it

    2017-05-15

    Highlights: • We generalize, in the realm of the Ginzburg–Landau theory, the de Gennes matching-matrix method for the interface order parameters to describe the superconducting properties of multi-band mesoscopic Josephson junctions. • The results are in agreement with a microscopic treatment of nanobridge junctions. • Thermal stability of the nanobridge junction is discussed in connection with recent experiments on iron-based grain-boundary junctions. - Abstract: A Ginzburg–Landau theory for multi-band mesoscopic Josephson junctions has been developed. The theory, obtained by generalizing the de Gennes matching-matrix method for the interface order parameters, allows the study of the phase dynamics of various types of mesoscopic Josephson junctions. As a relevant application, we studied mesoscopic double-band junctions also in the presence of a superconducting nanobridge interstitial layer. The results are in agreement with a microscopic treatment of the same system. Furthermore, thermal stability of the nanobridge junction is discussed in connection with recent experiments on iron-based grain-boundary junctions.

  8. Demonstrated Anomalous Pancreaticobiliary Ductal Junction

    OpenAIRE

    Koçkar, Cem; ?ENOL, Altu?; BA?TÜRK, Abdulkadir; AYDIN, Bünyamin; Cüre, Erkan

    2015-01-01

    Anomalies of the pancreaticobiliary junction are rare. Clinically anomalies of the pancreaticobiliary junction are uncommonly symptomatic but may present themselves with associated conditions ranging from benign acute abdominal pain to carcinomas. A 52 years old man was admitted to gastroenterology service with complaints of fever, nausea, vomiting and recurrent epigastric pain. He was diagnosed with biliary pancreatitis. Endoscopic retrograde cholangiopancreato-graphy was performed. Papilla ...

  9. Controllable 0-π Josephson junctions containing a ferromagnetic spin valve

    Science.gov (United States)

    Gingrich, E. C.; Niedzielski, Bethany M.; Glick, Joseph A.; Wang, Yixing; Miller, D. L.; Loloee, Reza; Pratt, W. P., Jr.; Birge, Norman O.

    2016-06-01

    Superconductivity and ferromagnetism are antagonistic forms of order, and rarely coexist. Many interesting new phenomena occur, however, in hybrid superconducting/ferromagnetic systems. For example, a Josephson junction containing a ferromagnetic material can exhibit an intrinsic phase shift of π in its ground state for certain thicknesses of the material. Such `π-junctions' were first realized experimentally in 2001 (refs ,), and have been proposed as circuit elements for both high-speed classical superconducting computing and for quantum computing. Here we demonstrate experimentally that the phase state of a Josephson junction containing two ferromagnetic layers can be toggled between 0 and π by changing the relative orientation of the two magnetizations. These controllable 0-π junctions have immediate applications in cryogenic memory, where they serve as a necessary component to an ultralow power superconducting computer. Such a fully superconducting computer is estimated to be orders of magnitude more energy-efficient than current semiconductor-based supercomputers. Phase-controllable junctions also open up new possibilities for superconducting circuit elements such as superconducting `programmable logic', where they could function in superconducting analogues to field-programmable gate arrays.

  10. Electronic thermometry in tunable tunnel junction

    Energy Technology Data Exchange (ETDEWEB)

    Maksymovych, Petro

    2016-03-15

    A tunable tunnel junction thermometry circuit includes a variable width tunnel junction between a test object and a probe. The junction width is varied and a change in thermovoltage across the junction with respect to the change in distance across the junction is determined. Also, a change in biased current with respect to a change in distance across the junction is determined. A temperature gradient across the junction is determined based on a mathematical relationship between the temperature gradient, the change in thermovoltage with respect to distance and the change in biased current with respect to distance. Thermovoltage may be measured by nullifying a thermoelectric tunneling current with an applied voltage supply level. A piezoelectric actuator may modulate the probe, and thus the junction width, to vary thermovoltage and biased current across the junction. Lock-in amplifiers measure the derivatives of the thermovoltage and biased current modulated by varying junction width.

  11. Confocal Annular Josephson Tunnel Junctions

    Science.gov (United States)

    Monaco, Roberto

    2016-09-01

    The physics of Josephson tunnel junctions drastically depends on their geometrical configurations and here we show that also tiny geometrical details play a determinant role. More specifically, we develop the theory of short and long annular Josephson tunnel junctions delimited by two confocal ellipses. The behavior of a circular annular Josephson tunnel junction is then seen to be simply a special case of the above result. For junctions having a normalized perimeter less than one, the threshold curves in the presence of an in-plane magnetic field of arbitrary orientations are derived and computed even in the case with trapped Josephson vortices. For longer junctions, a numerical analysis is carried out after the derivation of the appropriate motion equation for the Josephson phase. We found that the system is modeled by a modified and perturbed sine-Gordon equation with a space-dependent effective Josephson penetration length inversely proportional to the local junction width. Both the fluxon statics and dynamics are deeply affected by the non-uniform annulus width. Static zero-field multiple-fluxon solutions exist even in the presence of a large bias current. The tangential velocity of a traveling fluxon is not determined by the balance between the driving and drag forces due to the dissipative losses. Furthermore, the fluxon motion is characterized by a strong radial inward acceleration which causes electromagnetic radiation concentrated at the ellipse equatorial points.

  12. ATLAS electromagnetic end-cap detector

    CERN Multimedia

    Maximilien Brice

    2003-01-01

    After the insertion of the first end-cap into this cryostat, the team proceed to the wiring operations. Millions of wires are connected to the electromagnetic calorimeter on this end-cap, whch must be carefully fed out from the detector so that data can be read out. The energy of photons, electrons and positrons will be measured as they pass through the end-cap having been created along the line of the beams in the proton-proton collisions.

  13. Photoluminescence quenching effect by Si cap in n+ Ge on Si

    Science.gov (United States)

    Pan, H.; Takahashi, R.; Takinai, K.; Wada, K.

    2015-02-01

    Monolithically integrated Ge lasers on Si have long been one of the biggest challenges for electronic and photonic integration on Si Complementary Metal Oxide Semiconductor (CMOS) platform. The "last one mile" is to reduce the threshold current of the electrically pumped Ge-on-Si laser. We have studied the growth of heavily doped n type (n+) Ge and analyzed its photoluminescence (PL) characteristics of Ge with a Si cap and thermal oxide layers. It is found that the PL intensity of n+ Ge was significantly reduced by the cap and etching off the cap showed a ~100% recovery to the intensity of n+ Ge without the cap. Thermally oxidized n+ Ge, on the other hand, showed a ~50% increase in the PL intensity of uncapped n+ Ge. These finding indicated that capping of n+ Ge introduces non-radiative recombination centers due to defects (dislocations) to reduce the PL intensity, while oxidation passivates surface defects remained even on uncapped n+ Ge. Considering these, we have designed and fabricated an electrically pumped n+ Ge light emitting diode with no Si cap layer but oxidation. A broad luminescence of Ge at 1500-1700 nm has been demonstrated but yet lasing not observed.

  14. The Drangajökull ice cap, northwest Iceland, persisted into the early-mid Holocene

    Science.gov (United States)

    Schomacker, Anders; Brynjólfsson, Skafti; Andreassen, Julie M.; Gudmundsdóttir, Esther Ruth; Olsen, Jesper; Odgaard, Bent V.; Håkansson, Lena; Ingólfsson, Ólafur; Larsen, Nicolaj K.

    2016-09-01

    Most glaciers and ice caps in Iceland experienced rapid deglaciation in the early Holocene, reaching a minimum extent during the Holocene Thermal Maximum. Here we present evidence of the Holocene glacial history from lake sediment cores retrieved from seven threshold lakes around the Drangajökull ice cap in the Vestfirðir peninsula, NW Iceland. The sediment cores show on/off signals of glacial meltwater activity, as minerogenic material deposited from glacial meltwater alternates with organic-rich material (gyttja) deposited without glacial meltwater. We base the chronology of the sediment cores on 14C ages and geochemical identification of key tephra layers with known ages. A 25-cm thick layer of the Saksunarvatn tephra in Lake Skorarvatn indicates that the northern part of the ice cap had reached a similar size as today or was smaller already by 10.2 cal kyr BP. However, 14C ages of lake sediment cores from the highlands southeast of Drangajökull suggest that this part of the ice cap was larger than today until 7.8-7.2 cal kyr BP. Even today, the Drangajökull ice cap has a different behavior than the main ice caps in Iceland, characterized by a very low glaciation limit. Because palaeoclimatic proxies show an early-mid Holocene temperature optimum in this part of Iceland, we suggest that the persistence of Drangajökull into the early Holocene and, possibly, also the entire Holocene was due to high winter precipitation.

  15. A novel integrated active capping technique for the remediation of nitrobenzene-contaminated sediment.

    Science.gov (United States)

    Sun, Hongwen; Xu, Xiaoyang; Gao, Guandao; Zhang, Zizhong; Yin, Peijie

    2010-10-15

    The objective of this study was to develop a novel integrated active capping system and to investigate its efficiency in the remediation of nitrobenzene-contaminated sediment. An integrated Fe(0)-sorbent-microorganism remediation system was proposed as an in situ active capping technique to remediate nitrobenzene-contaminated sediment. In this system, nitrobenzene was reduced to aniline by Fe(0), which has a much better biodegradability. The sorption capacity and structural properties of cinder was measured to examine its applicability as the sorbent and matrix for this integrated capping system. Indigenous microorganisms from Songhuajiang River sediment, which was contaminated by nitrobenzene and aniline in Chinese Petrochemical Explosion in Jilin, were acquired one month after the explosion and used in this active capping system to degrade nitrobenzene and its reduced product, aniline. A bench-scale remediation experiment was conducted on a mimicked nitrobenzene-contaminated sediment to investigate the efficiency of the integrated capping system and the synergistic effects of the combined components in the active capping system. The results show that this integrated active capping system can effectively block the release of target pollutants into the upper-layer water and remove the compounds from the environment.

  16. Cryopyrin-Associated Autoinflammatory Syndromes (CAPS) - Juvenile

    Science.gov (United States)

    ... Cryopyrin-Associated Autoinflammatory Syndrome (CAPS) (Juvenile) Dermatomyositis (Juvenile) Familial Mediterranean Fever (Juvenile) Fibromyalgia Giant Cell Arteritis Glucocorticoid-induced Osteoperosis ...

  17. Octagonal Defects at Carbon Nanotube Junctions

    Science.gov (United States)

    Jaskólski, W.; Pelc, M.; Chico, Leonor; Ayuela, A.

    2013-01-01

    We investigate knee-shaped junctions of semiconductor zigzag carbon nanotubes. Two dissimilar octagons appear at such junctions; one of them can reconstruct into a pair of pentagons. The junction with two octagons presents two degenerate localized states at Fermi energy (EF). The reconstructed junction has only one state near EF, indicating that these localized states are related to the octagonal defects. The inclusion of Coulomb interaction splits the localized states in the junction with two octagons, yielding an antiferromagnetic system. PMID:24089604

  18. Micromagnetic modeling of critical current oscillations in magnetic Josephson junctions

    Science.gov (United States)

    Golovchanskiy, I. A.; Bol'ginov, V. V.; Stolyarov, V. S.; Abramov, N. N.; Ben Hamida, A.; Emelyanova, O. V.; Stolyarov, B. S.; Kupriyanov, M. Yu.; Golubov, A. A.; Ryazanov, V. V.

    2016-12-01

    In this work we propose and explore an effective numerical approach for investigation of critical current dependence on applied magnetic field for magnetic Josephson junctions with in-plane magnetization orientation. This approach is based on micromagnetic simulation of the magnetization reversal process in the ferromagnetic layer with introduced internal magnetic stiffness and subsequent reconstruction of the critical current value using total flux or reconstructed actual phase difference distribution. The approach is flexible and shows good agreement with experimental data obtained on Josephson junctions with ferromagnetic barriers. Based on this approach we have obtained a critical current dependence on applied magnetic field for rectangular magnetic Josephson junctions with high size aspect ratio. We have shown that the rectangular magnetic Josephson junctions can be considered for application as an effective Josephson magnetic memory element with the value of critical current defined by the orientation of magnetic moment at zero magnetic field. An impact of shape magnetic anisotropy on critical current is revealed and discussed. Finally, we have considered a curling magnetic state in the ferromagnetic layer and demonstrated its impact on critical current.

  19. Spin-transfer torque in spin filter tunnel junctions

    KAUST Repository

    Ortiz Pauyac, Christian

    2014-12-08

    Spin-transfer torque in a class of magnetic tunnel junctions with noncollinear magnetizations, referred to as spin filter tunnel junctions, is studied within the tight-binding model using the nonequilibrium Green\\'s function technique within Keldysh formalism. These junctions consist of one ferromagnet (FM) adjacent to a magnetic insulator (MI) or two FM separated by a MI. We find that the presence of the magnetic insulator dramatically enhances the magnitude of the spin-torque components compared to conventional magnetic tunnel junctions. The fieldlike torque is driven by the spin-dependent reflection at the MI/FM interface, which results in a small reduction of its amplitude when an insulating spacer (S) is inserted to decouple MI and FM layers. Meanwhile, the dampinglike torque is dominated by the tunneling electrons that experience the lowest barrier height. We propose a device of the form FM/(S)/MI/(S)/FM that takes advantage of these characteristics and allows for tuning the spin-torque magnitudes over a wide range just by rotation of the magnetization of the insulating layer.

  20. Patterning thick diffused junctions on CdTe

    CERN Document Server

    Kalliopuska, Juha; Sipilä, Heikki; Andersson, Hans; Vähänen, Sami; Eränen, Simo; Tlustos, Lukas

    2009-01-01

    Dividing the detector crystal into discrete pixels enables making an imaging detector, in which the charge collected by each pixel can be read separately. Even if the detector is not meant for imaging, patterns on the crystal surface may be used as guard structures that control and limit the flow of charges in the crystal. This has been exceedingly hard for the detector crystals having thick diffused layers. The paper reports a patterning method of the thick diffused junctions on CdTe. The patterning method of In-diffused pn-junction on CdTe chip is demonstrated by using a diamond blade. The patterning is done by removing material from the pn-junction side of the chip, so that the trenches penetrate the diffused layer. As the trenches extend deeper into the bulk than the junction, the regions separated by the trench are electrically isolated. Electrical characterization results are reported for the strips separated by trenches with various depths. The strip isolation is clearly seen in both measured leakage c...

  1. Fabrications aspects of microwave devices, including ramp-type high-Tc Josephson junctions and log-periodic antenna's

    NARCIS (Netherlands)

    Terpstra, D.; Rijnders, A.J.H.M.; Roesthuis, F.J.G.; Blank, D.H.A.; Gerritsma, G.J.; Rogalla, H.

    1993-01-01

    We describe the development of high-Tc Josephson junction devices for applications at millimeter wave frequencies. These devices consist of ramp type YBCO/PBCO/YBCO Josephson junctions that are equipped with a noble metal log-periodic antenna. Growth conditions of all layers, as well as etching, cle

  2. Photoelectric polarization-sensitive broadband photoresponse from interface junction states in graphene

    Science.gov (United States)

    Kalugin, Nikolai G.; Jing, Lei; Suarez Morell, Eric; Dyer, Gregory C.; Wickey, Lee; Ovezmyradov, Mekan; Grine, Albert D.; Wanke, Michael C.; Shaner, Eric A.; Lau, Chun Ning; Foa Torres, Luis E. F.; Fistul, Mikhail V.; Efetov, Konstantin B.

    2017-03-01

    Graphene has established itself as a promising optoelectronic material. Many details of the photoresponse (PR) mechanisms in graphene in the THz-to-visible range have been revealed, however, new intricacies continue to emerge. Interface junctions, formed at the boundaries between parts of graphene with different number of layers or different stacking orders, and making connection between electrical contacts, provide another peculiar setup to establish PR. Here, we experimentally demonstrate an enhanced polarization sensitive photoelectric PR in graphene sheets containing interface junctions as compared to homogenous graphene sheets in the visible, infrared, and THz spectral regions. Our numerical simulations show that highly localized electronic states are created at the interface junctions, and these states exhibit a unique energy spectrum and enhanced probabilities for optical transitions. The interaction of electrons from interface junction states with electromagnetic fields generates a polarization-sensitive PR that is maximal for the polarization direction perpendicular to the junction interface.

  3. Submicron area NbN/MgO/NbN tunnel junctions for SIS mixer applications

    Science.gov (United States)

    Leduc, H. G.; Judas, A.; Cypher, S. R.; Bumble, B.; Hunt, B. D.

    1991-01-01

    The development of submicron area mixer elements for operation in the submillimeter wave range is discussed. High-current-density NbN/MgO/NbN tunnel junctions with areas down to 0.1 sq microns have been fabricated in both planar and edge geometries. The planar junctions were fabricated from in situ deposited trilayers using electron-beam lithography to pattern submicron area mesas. Modifications of fabrication techniques used in larger-area NbN tunnel junctions are required and are discussed. The NbN/MgO/NbN edge junction process using sapphire substrates has been transferred to technologically important quartz substrates using MgO buffer layers to minimize substrate interactions. The two junction geometries are compared and contrasted in the context of submillimeter wave mixer applications.

  4. Area-dependence of spin-triplet supercurrent in ferromagnetic Josephson junctions

    Science.gov (United States)

    Wang, Yixing; Pratt, W. P., Jr.; Birge, Norman O.

    2012-06-01

    Josephson junctions containing multiple ferromagnetic layers can carry spin-triplet supercurrent under certain conditions. Large-area junctions containing multiple domains are expected to have a random distribution of 0 or π coupling across the junction surface, whereas magnetized samples should have uniquely π coupling everywhere. We have measured the area-dependence of the critical current in such junctions, and confirm that the critical current scales linearly with area in magnetized junctions. For as-grown (multidomain) samples, the results are mixed. Samples grown on a thick Nb base exhibit critical currents that scale sublinearly with area, while samples grown on a smoother Nb/Al multilayer base exhibit critical currents that scale linearly with area. The latter results are consistent with a theoretical picture due to Zyuzin and Spivak that predicts that the as-grown samples should have global π/2 coupling.

  5. Stability of amorphous silicon alloy triple-junction solar cells and modules

    Energy Technology Data Exchange (ETDEWEB)

    Sato, K.; Aiga, M.; Otsubo, M.

    1987-06-25

    Results on reliability test for amorphous silicon alloy triple-junction solar cells and modules are described. It has been found that, for a-SiGe:H pin cells, reduction of the stress in the film is of first importance for stability. Application of low-temperature-deposited microcrystalline p-layer for each sub cell and of thinner i-layers for the middle and the bottom cells improves stability of triple-junction cells, by enhancing the electric field in the i-layers.

  6. Tunneling planer Hall effect in Ni81Fe19/Al2O3/Nix Fe1-x junction

    Institute of Scientific and Technical Information of China (English)

    陈慧余; 冯永嘉; 熊曹水

    1999-01-01

    Tunneling planer Hall (TPH) effect in Ni81Fe19/Al2O3/NixFe1-x trilayer junction is different from general planer Hall effect in single-layer film or two-layer junction. This effect concerns the spin-polarized transport, so that the TPH voltage depends on the angle between magnetic vectors of two ferromagnetic layers. The TPH effect is reported to be influenced by composition and magnetic properties of FM layers and the thickness of the insulating layer.

  7. The North Zealand CAP Monitor

    DEFF Research Database (Denmark)

    Nielsen, Minna; Ravn, Pernille; Notander Clausen, Lise

    nurses and two senior doctors. Direct observations of the clinical processes revealed problems of coordination, complex disease trajectories that did not fit with the pneumonia pathway, unclear guidelines and variation in their interpretation. Intervention We designed a measurement system to monitor...... patients with CAP and effects of interventions to improve the quality of their care. Based on current literature we defined and tested a set of indicators and designed an audit form, a database and a dashboard for presenting the results. Two nurses monthly audited randomly selected files of patients...... team of clinicians from the emergency department and inpatient units. Measurement of improvement Audit results are presented as a multidimensional dashboard of aggregated baseline data and run charts to monitor changes. Microbiological tests were delayed, often performed after antibiotics were started...

  8. Assured information flow capping architecture

    Science.gov (United States)

    Black, M. D.; Carvin, N. A.

    1985-05-01

    The Tactical Air Control System (TACS) is that set of Tactical Air Force assets used to assess the air and ground situation, and to plan, allocate, commit, and control assigned resources. Previous studies noted that the TACS elements should be more highly distributed to improve survivability in the battlefield of the future. This document reports on the results of the Assured Information Flow Capping Architecture study, which developed governing concepts for communications architectures that can support the information flow requirements of a future, distributed TACS. Architecture comprising existing and planned communications equipment were postulated and compared with a set of goals to identify deficiencies. Architectures using new equipment that resolve many of the deficiencies were then postulated, and areas needing further investigation were identified.

  9. Structure of the breakpoint region on current-voltage characteristics of intrinsic Josephson junctions

    Science.gov (United States)

    Shukrinov, Yu. M.; Mahfouzi, F.; Suzuki, M.

    2008-10-01

    A fine structure of the breakpoint region in the current-voltage characteristics of the coupled intrinsic Josephson junctions in the layered superconductors is found. We establish a correspondence between the features in the current-voltage characteristics and the character of the charge oscillations in superconducting layers in the stack and explain the origin of the breakpoint region structure.

  10. Magnetoresistance of galfenol-based magnetic tunnel junction

    Energy Technology Data Exchange (ETDEWEB)

    Gobaut, B., E-mail: benoit.gobaut@elettra.eu [Sincrotrone Trieste S.C.p.A., S.S. 14 Km 163.5, Area Science Park, 34149 Trieste (Italy); Vinai, G.; Castán-Guerrero, C.; Krizmancic, D.; Panaccione, G.; Torelli, P. [Laboratorio TASC, IOM-CNR, S.S. 14km 163.5, Basovizza, 34149 Trieste (Italy); Rafaqat, H. [Laboratorio TASC, IOM-CNR, S.S. 14km 163.5, Basovizza, 34149 Trieste (Italy); ICTP, Trieste (Italy); Roddaro, S. [Laboratorio TASC, IOM-CNR, S.S. 14km 163.5, Basovizza, 34149 Trieste (Italy); NEST, Scuola Normale Superiore and Istituto Nanoscienze-CNR, Piazza S. Silvestro 12, 56127 Pisa (Italy); Rossi, G. [Laboratorio TASC, IOM-CNR, S.S. 14km 163.5, Basovizza, 34149 Trieste (Italy); Dipartimento di Fisica, Università di Milano, via Celoria 16, 20133 Milano (Italy); Eddrief, M.; Marangolo, M. [Sorbonne Universités, UPMC Paris 06, CNRS-UMR 7588, Institut des Nanosciences de Paris, 75005, Paris (France)

    2015-12-15

    The manipulation of ferromagnetic layer magnetization via electrical pulse is driving an intense research due to the important applications that this result will have on memory devices and sensors. In this study we realized a magnetotunnel junction in which one layer is made of Galfenol (Fe{sub 1-x}Ga{sub x}) which possesses one of the highest magnetostrictive coefficient known. The multilayer stack has been grown by molecular beam epitaxy and e-beam evaporation. Optical lithography and physical etching have been combined to obtain 20x20 micron sized pillars. The obtained structures show tunneling conductivity across the junction and a tunnel magnetoresistance (TMR) effect of up to 11.5% in amplitude.

  11. Modelling of Dual-Junction Solar Cells including Tunnel Junction

    Directory of Open Access Journals (Sweden)

    Abdelaziz Amine

    2013-01-01

    Full Text Available Monolithically stacked multijunction solar cells based on III–V semiconductors materials are the state-of-art of approach for high efficiency photovoltaic energy conversion, in particular for space applications. The individual subcells of the multi-junction structure are interconnected via tunnel diodes which must be optically transparent and connect the component cells with a minimum electrical resistance. The quality of these diodes determines the output performance of the solar cell. The purpose of this work is to contribute to the investigation of the tunnel electrical resistance of such a multi-junction cell through the analysis of the current-voltage (J-V characteristics under illumination. Our approach is based on an equivalent circuit model of a diode for each subcell. We examine the effect of tunnel resistance on the performance of a multi-junction cell using minimization of the least squares technique.

  12. Capping and in vivo toxicity studies of gold nanoparticles

    Science.gov (United States)

    Nghiem, Thi Ha Lien; Tuyen Nguyen, Thi; Fort, Emmanuel; Phuong Nguyen, Thanh; Nhung Hoang, Thi My; Quy Nguyen, Thi; Nhung Tran, Hong

    2012-03-01

    Water-dispersed colloidal gold nanoparticles (AuNPs) with high concentration were synthesized from metal precursor HAuCl4. The bovine serum albumin (BSA) and heterobiofunctionalized thiol polyethylene glycol acid (HS-PEG-COOH) were used as biofunctionalized layers for the synthesized AuNPs. The BSA and HS-PEG-COOH bound to the AuNPs were characterized qualitatively and quantitatively by transmission electron microscope and UV-VS spectrophotometer. The fabricated BSA and HS-PEG-COOH-capped AuNPs were introduced in mouse to study its toxicity and its availability in the liver.

  13. Nature mangement, landscape and the CAP

    NARCIS (Netherlands)

    Brouwer, F.M.; Godeschalk, F.E.

    2004-01-01

    The integration of nature management, landscape and environmental concerns into the Common Agricultural Policy (CAP) has gained momentum with the CAP reforms adopted in June 2003. The report explores instruments and approaches that contribute to the inte-gration of nature conservation and landscape

  14. ALEPH end-cap and barrel

    CERN Multimedia

    Patrice Loiez

    1993-01-01

    The end-cap is pulled away from the barrel on the ALEPH detector so that the hadronic calorimeter and muon chambers are revealed. The end-cap maximises the data available from particles produced along the direction of the beam. The workers on the inner part of the detector give a sense of scale.

  15. Characterization of sputtering CoFe-ITO junction for spin injection

    Institute of Scientific and Technical Information of China (English)

    WEN Qiye; SONG Yuanqiang; YANG Qinghui; ZHANG Huaiwu

    2006-01-01

    The combination of ferromagnetic metal (FM) and semiconductor (SC) for spin injection was studied and demonstrated with FM-SC-FM junction. The semiconductor was chosen to be doped Indium-Tin-Oxide(ITO). Both ITO single-layer film and CoFe-ITO-CoFe junction were sputtering deposited. The ITO single-layer film wasn-type with a small resistance of about 100 Ω/Square. I-V curves and Magnetoresistance (MR) effect of the CoFe-ITO-CoFe junction were measured at room temperature and 77 K. Results show that the CoFe forms an ohmic contact to ITO film. But at low temperature, the I-V curves show a Schottky-like characteristic, which is strongly affect by applied magnetic field. The MR effect was measured to be 1% at 77 K, which indicates a spin injection into semiconductor to be realized in this sandwich junction.

  16. Fully magnetic manganite spin filter tunnel junctions

    Science.gov (United States)

    Prasad, Bhagwati; Blamire, Mark G.

    2016-09-01

    In this paper we demonstrate spintronic devices which combine magnetic tunnel junctions with a spin-filtering tunnel barrier. These consist of an ultrathin ferromagnetic insulating barrier, Sm0.75Sr0.25MnO3, sandwiched between two ferromagnetic half-metallic manganite electrodes, La0.7Sr0.3MnO3 and La0.7Ca0.3MnO3, in a nanopillar structure. Depending on the relative magnetic configurations of barrier and electrode layers, three resistance states are well defined, which therefore represent a potential three-state memory concept. These results open the way for the development of spintronic devices by exploiting the many degrees of freedom of perovskite manganite heterostructure systems.

  17. Tunable Magnetic Proximity Effects in Graphene Junctions

    Science.gov (United States)

    Lazic, Predrag; Belashchenko, Kirill; Zutic, Igor

    2015-03-01

    The characteristic length of the magnetic proximity effects exceed the thickness of a graphene layer leading to an important, but typically overlooked, modifications of equilibrium and transport properties, as well as the implications for graphene spintronics. Using the first-principles studies that integrate a real space density functional theory (GPAW) with the state-of-the art boundary elements electrostatic code based on the Robin Hood method, we explore tunable electronic structure and magnetic proximity effects in the ferromagnet/insulator/graphene junctions. We show that the inclusion of a finite-size gate electrodes and van der Walls interaction lead to nontrivial effects that could also be important in other two-dimensional materials beyond graphene. Work supported by US ONR, NSF-DMR and Nebraska NSF MRSEC.

  18. Completion of the first TRT End-cap

    CERN Multimedia

    Catinaccio, A; Rohne, O

    On July 1, the first end-cap of the ATLAS Transition Radiation Tracker (TRT) was successfully completed in terms of the integration of the wheels assembled in Russia with their front-end electronics. The two groups of the detector, fully assembled and equipped with front-end electronics, were rotated from their horizontal position during stacking to their nominal vertical position, in which they will be integrated with the corresponding end-cap silicon-strip (SCT) detector towards the end of 2005, before installation into ATLAS in spring 2006. After starting the assembly in the SR building one year ago, the TRT team reached this important milestone, which marks the final realization and validation of the engineering concept developed by the CERN DT1 (ex-TA1) and ATT teams. A TRT end-cap consists of two sets of identical and independent wheels. The first type of wheels (type A, 12 wheels, positioned closest to the primary interaction point) contains 6144 radial straws positioned in eight successive layers s...

  19. Charge transport in nanoscale junctions.

    Science.gov (United States)

    Albrecht, Tim; Kornyshev, Alexei; Bjørnholm, Thomas

    2008-09-03

    the molecular level. Nanoscale charge transport experiments in ionic liquids extend the field to high temperatures and to systems with intriguing interfacial potential distributions. Other directions may include dye-sensitized solar cells, new sensor applications and diagnostic tools for the study of surface-bound single molecules. Another motivation for this special issue is thus to highlight activities across different research communities with nanoscale charge transport as a common denominator. This special issue gathers 27 articles by scientists from the United States, Germany, the UK, Denmark, Russia, France, Israel, Canada, Australia, Sweden, Switzerland, the Netherlands, Belgium and Singapore; it gives us a flavour of the current state-of-the-art of this diverse research area. While based on contributions from many renowned groups and institutions, it obviously cannot claim to represent all groups active in this very broad area. Moreover, a number of world-leading groups were unable to take part in this project within the allocated time limit. Nevertheless, we regard the current selection of papers to be representative enough for the reader to draw their own conclusions about the current status of the field. Each paper is original and has its own merit, as all papers in Journal of Physics: Condensed Matter special issues are subjected to the same scrutiny as regular contributions. The Guest Editors have deliberately not defined the specific subjects covered in this issue. These came out logically from the development of this area, for example: 'Traditional' solid state nanojunctions based on adsorbed layers, oxide films or nanowires sandwiched between two electrodes: effects of molecular structure (aromaticity, anchoring groups), symmetry, orientation, dynamics (noise patterns) and current-induced heating. Various 'physical effects': inelastic tunnelling and Coulomb blockade, polaron effects, switching modes, and negative differential resistance; the role of

  20. Toward Complementary Ionic Circuits: The npn Ion Bipolar Junction Transistor

    OpenAIRE

    Tybrandt, Klas; Gabrielsson, Erik; Berggren, Magnus

    2011-01-01

    Many biomolecules are charged and may therefore be transported with ionic currents. As a step toward addressable ionic delivery circuits, we report on the development of a npn ion bipolar junction transistor (npn-IBJT) as an active control element of anionic currents in general, and specifically, demonstrate actively modulated delivery of the neurotransmitter glutamic acid. The functional materials of this transistor are ion exchange layers and conjugated polymers. The npn-IBJT shows stable t...

  1. An improved method to spot-weld difficult junctions

    Science.gov (United States)

    Ferrenz, Elizabeth E.; Amare, Andinet; Arumainayagam, Christopher R.

    2001-12-01

    Recent advances in spot-welding technology such as high frequency direct current inverter welders provide an improved and reproducible method to spot-weld difficult junctions. The importance of removing the oxide layers on metal surfaces, accurately delivering the weld pulse profile, and controlling the force applied to the materials during the welding process are discussed in the context of resistance spot-welding a molybdenum crystal to a tantalum loop and attaching a tungsten-rhenium thermocouple to the crystal.

  2. Junction Transport in Epitaxial Film Silicon Heterojunction Solar Cells: Preprint

    Energy Technology Data Exchange (ETDEWEB)

    Young, D. L.; Li, J. V.; Teplin, C. W.; Stradins, P.; Branz, H. M.

    2011-07-01

    We report our progress toward low-temperature HWCVD epitaxial film silicon solar cells on inexpensive seed layers, with a focus on the junction transport physics exhibited by our devices. Heterojunctions of i/p hydrogenated amorphous Si (a-Si) on our n-type epitaxial crystal Si on n++ Si wafers show space-charge-region recombination, tunneling or diffusive transport depending on both epitaxial Si quality and the applied forward voltage.

  3. Immunohistochemical localization of a gap junction protein (connexin43) in the muscularis externa of murine, canine, and human intestine

    DEFF Research Database (Denmark)

    Mikkelsen, H B; Huizinga, J D; Thuneberg, L

    1993-01-01

    Electron-microscopic studies have revealed a heterogeneous distribution of gap junctions in the muscularis externa of mammalian intestines. This heterogeneity is observed at four different levels: among species; between small and large intestines; between longitudinal and circular muscle layers; ...

  4. Shift of the blocking temperature of Co nanoparticles by Cr capping

    Energy Technology Data Exchange (ETDEWEB)

    Ewerlin, Melanie; Demirbas, Derya; Petracic, Oleg [Experimentalphysik IV, Ruhr-Universitaet Bochum, 44780 Bochum (Germany); Agudo, Leonardo; Eggeler, Gunther [Institute for Materials, Department of Materials Science, Ruhr-Universitaet Bochum, 44780 Bochum (Germany)

    2011-07-01

    We have prepared self-assembled Co nanoparticles on Al2O3 buffer layers and studied the effect of capping with various amounts of Cr onto the magnetic properties. Magnetization measurements were performed using superconducting quantum interference device (SQUID) magnetometry and structural characterization using transmission electron microscopy (TEM). The uncapped Co nanoparticles show superparamagnetic behaviour with a blocking temperature of TB=14K. The magnetic properties are strongly influenced by the Cr capping resulting in a decrease of TB for nominal thicknesses of Cr up to 0.15nm. However, for larger values 0.15 nm < tCr <0.4nm the blocking temperature increases again. We suggest that for the first regime the Cr capping layer leads to an enhanced dissipation of magnetization, while the second regime is governed by inter-particle coupling via Cr bridges.

  5. Ferromagnetism of polythiophene-capped Au nanoparticles

    Science.gov (United States)

    Suzuki, K.; Zhang, H.; Saito, K.; Garitaonandia, J. S.; Goikolea, E.; Insausti, M.

    2011-04-01

    The magnetic and electrical transport properties of regioregular poly(3-hexylthiophene)-capped Au nanoparticles (NPs) doped with iodine have been investigated to clarify the effectiveness of conductive polymer capping on the induction of ferromagnetism in Au. The room-temperature magnetization curve of the undoped polythiophene-capped Au NPs exhibits a clear hysteresis behavior with a coercive force of 160 Oe. The spontaneous magnetization normalized by the mass of Au is 2.0 × 10-2 emu/g. The spontaneous magnetization was found virtually unaffected by iodine doping, whereas the electrical conductivity is enhanced dramatically to ˜10 S/cm. Our results show that polythiophene capping could lead to spontaneous magnetic polarization in Au NPs, and the conductivity of the polymer capping does not affect the ferromagnetism of the Au nanoparticles, opening a possibility for further investigation into the magnetotransport behavior of ferromagnetic Au NPs.

  6. Niobium nitride technology for Josephson junction devices

    Energy Technology Data Exchange (ETDEWEB)

    Meckbach, Johannes Maximilian; Merker, Michael; Il' in, Konstantin; Siegel, Michael [Institut fuer Mikro- und Nanoelektronische Systeme (IMS), Karlsruher Institut fuer Technologie (KIT), Hertzstrasse 16, 76187 Karlsruhe (Germany); Haeffelin, Andreas [Institut fuer Werkstoffe der Elektrotechnik (IWE), Karlsruher Institut fuer Technologie(KIT), Adenauerring 20b, 76131 Karlsruhe (Germany)

    2013-07-01

    Over the last decades Nb/Al-AlO{sub x}/Nb multi-layers have been the primary choice for Josephson junction (JJ) devices such as SIS mixers, SQUIDs and RSFQ. Various applications require high critical-current densities j{sub c} and low sub-gap leakage. Additionally, a large gap-voltage benefits the performance of most devices. Nb/Al-AlO{sub x}/Nb technology is limited in j{sub c} due to an increasing transparency of the barrier with increasing j{sub c}, and the energy-gap of the Nb electrodes poses an upper frequency limit for SIS mixers. NbN/AlN/NbN multi-layer technology has emerged as an alternative to Nb/Al-AlO{sub x}/Nb. The upper frequency limit of NbN-based SIS mixing element significantly exceeds that of Nb, and AlN-barriers result in higher j{sub c}'s at identical thicknesses as compared to AlO{sub x}. We have developed an in-situ fabrication technology for NbN/AlN/NbN multi-layers. We found a clear influence of the sputter parameters on the surface morphology of the NbN electrodes, which directly impacts on the quality of the JJs. Transport properties of JJs on different substrates are presented.

  7. Manufacturing uniform field silicon drift detector using double boron layer

    Energy Technology Data Exchange (ETDEWEB)

    Golshani, Negin, E-mail: negingolshani@gmail.com; Beenakker, C.I.M; Ishihara, R.

    2015-09-11

    Novel SDDs with continuous junctions on both sides are fabricated using pure boron (PureB) depositions to create a shallow junction in the entrance window side and a continuous rectifying junction with different potentials as function of the drift coordinate in the device side. The SDDs made in this material offer lower leakage current. In addition, continuous SDD designed with two boron layers with different sheet resistances displays uniform electric field.

  8. The c-axis charge traveling wave in coupled system of Josephson junctions

    OpenAIRE

    Shukrinov, Yu M.; Hamdipour, M.

    2011-01-01

    We demonstrate a manifestation of the charge traveling wave along the c-axis (TW) in current voltage characteristics of coupled Josephson junctions in high-$T_c$ superconductors. The branches related to the TW with different wavelengths are found for the stacks with different number of Josephson junctions at different values of system's parameters. Transitions between the TW branches and the outermost branch are observed. Time dependence of the electric charge in the superconducting layers an...

  9. Width of the $0-\\pi$ phase transition in diffusive magnetic Josephson junctions

    OpenAIRE

    Shomali, Zahra; Zareyan, Malek; Belzig, Wolfgang

    2008-01-01

    We investigate the Josephson current between two superconductors (S) which are connected through a diffusive magnetic junction with a complex structure (F$_{c}$). Using the quantum circuit theory, we obtain the phase diagram of 0 and $\\pi$ Josephson couplings for F$_{c}$ being a IFI (insulator-ferromagnet-insulator) double barrier junction or a IFNFI structure (where N indicates a normal metal layer). Compared to a simple SFS structure, we find that the width of the transition, defined by the...

  10. Switching current density reduction in perpendicular magnetic anisotropy spin transfer torque magnetic tunneling junctions

    Energy Technology Data Exchange (ETDEWEB)

    You, Chun-Yeol [Department of Physics, Inha University, Incheon 402-751 (Korea, Republic of)

    2014-01-28

    We investigate the switching current density reduction of perpendicular magnetic anisotropy spin transfer torque magnetic tunneling junctions using micromagnetic simulations. We find that the switching current density can be reduced with elongated lateral shapes of the magnetic tunnel junctions, and additional reduction can be achieved by using a noncollinear polarizer layer. The reduction is closely related to the details of spin configurations during switching processes with the additional in-plane anisotropy.

  11. Abrupt PN junctions: Analytical solutions under equilibrium and non-equilibrium

    Science.gov (United States)

    Khorasani, Sina

    2016-08-01

    We present an explicit solution of carrier and field distributions in abrupt PN junctions under equilibrium. An accurate logarithmic numerical method is implemented and results are compared to the analytical solutions. Analysis of results shows reasonable agreement with numerical solution as well as the depletion layer approximation. We discuss extensions to the asymmetric junctions. Approximate relations for differential capacitance C-V and current-voltage I-V characteristics are also found under non-zero external bias.

  12. Atomically Thin Al2O3 Films for Tunnel Junctions

    Science.gov (United States)

    Wilt, Jamie; Gong, Youpin; Gong, Ming; Su, Feifan; Xu, Huikai; Sakidja, Ridwan; Elliot, Alan; Lu, Rongtao; Zhao, Shiping; Han, Siyuan; Wu, Judy Z.

    2017-06-01

    Metal-insulator-metal tunnel junctions are common throughout the microelectronics industry. The industry standard AlOx tunnel barrier, formed through oxygen diffusion into an Al wetting layer, is plagued by internal defects and pinholes which prevent the realization of atomically thin barriers demanded for enhanced quantum coherence. In this work, we employ in situ scanning tunneling spectroscopy along with molecular-dynamics simulations to understand and control the growth of atomically thin Al2O3 tunnel barriers using atomic-layer deposition. We find that a carefully tuned initial H2O pulse hydroxylated the Al surface and enabled the creation of an atomically thin Al2O3 tunnel barrier with a high-quality M -I interface and a significantly enhanced barrier height compared to thermal AlOx . These properties, corroborated by fabricated Josephson junctions, show that atomic-layer deposition Al2O3 is a dense, leak-free tunnel barrier with a low defect density which can be a key component for the next generation of metal-insulator-metal tunnel junctions.

  13. A novel route for preparing 5' cap mimics and capped RNAs: phosphate-modified cap analogues obtained via click chemistry.

    Science.gov (United States)

    Walczak, Sylwia; Nowicka, Anna; Kubacka, Dorota; Fac, Kaja; Wanat, Przemyslaw; Mroczek, Seweryn; Kowalska, Joanna; Jemielity, Jacek

    2017-01-01

    The significant biological role of the mRNA 5' cap in translation initiation makes it an interesting subject for chemical modifications aimed at producing useful tools for the selective modulation of intercellular processes and development of novel therapeutic interventions. However, traditional approaches to the chemical synthesis of cap analogues are time-consuming and labour-intensive, which impedes the development of novel compounds and their applications. Here, we explore a different approach for synthesizing 5' cap mimics, making use of click chemistry (CuAAC) to combine two mononucleotide units and yield a novel class of dinucleotide cap analogues containing a triazole ring within the oligophosphate chain. As a result, we synthesized a library of 36 mRNA cap analogues differing in the location of the triazole ring, the polyphosphate chain length, and the type of linkers joining the phosphate and the triazole moieties. After biochemical evaluation, we identified two analogues that, when incorporated into mRNA, produced transcripts translated with efficiency similar to compounds unmodified in the oligophosphate bridge obtained by traditional synthesis. Moreover, we demonstrated that the triazole-modified cap structures can be generated at the RNA 5' end using two alternative capping strategies: either the typical co-transcriptional approach, or a new post-transcriptional approach based on CuAAC. Our findings open new possibilities for developing chemically modified mRNAs for research and therapeutic applications, including RNA-based vaccinations.

  14. Field-calibrated model of melt, refreezing, and runoff for polar ice caps: Application to Devon Ice Cap

    Science.gov (United States)

    Morris, Richard M.; Mair, Douglas W. F.; Nienow, Peter W.; Bell, Christina; Burgess, David O.; Wright, Andrew P.

    2014-09-01

    Understanding the controls on the amount of surface meltwater that refreezes, rather than becoming runoff, over polar ice masses is necessary for modeling their surface mass balance and ultimately for predicting their future contributions to global sea level change. We present a modified version of a physically based model that includes an energy balance routine and explicit calculation of near-surface meltwater refreezing capacity, to simulate the evolution of near-surface density and temperature profiles across Devon Ice Cap in Arctic Canada. Uniquely, our model is initiated and calibrated using high spatial resolution measurements of snow and firn densities across almost the entire elevation range of the ice cap for the summer of 2004 and subsequently validated with the same type of measurements obtained during the very different meteorological conditions of summer 2006. The model captures the spatial variability across the transect in bulk snowpack properties although it slightly underestimates the flow of meltwater into the firn of previous years. The percentage of meltwater that becomes runoff is similar in both years; however, the spatial pattern of this melt-runoff relationship is different in the 2 years. The model is found to be insensitive to variation in the depth of impermeable layers within the firn but is very sensitive to variation in air temperature, since the refreezing capacity of firn decreases with increasing temperature. We highlight that the sensitivity of the ice cap's surface mass balance to air temperature is itself dependent on air temperature.

  15. Hybrid window layer for photovoltaic cells

    Science.gov (United States)

    Deng, Xunming

    2010-02-23

    A novel photovoltaic solar cell and method of making the same are disclosed. The solar cell includes: at least one absorber layer which could either be a lightly doped layer or an undoped layer, and at least a doped window-layers which comprise at least two sub-window-layers. The first sub-window-layer, which is next to the absorber-layer, is deposited to form desirable junction with the absorber-layer. The second sub-window-layer, which is next to the first sub-window-layer, but not in direct contact with the absorber-layer, is deposited in order to have transmission higher than the first-sub-window-layer.

  16. Gap junctions - guards of excitability.

    Science.gov (United States)

    Stroemlund, Line Waring; Jensen, Christa Funch; Qvortrup, Klaus; Delmar, Mario; Nielsen, Morten Schak

    2015-06-01

    Cardiomyocytes are connected by mechanical and electrical junctions located at the intercalated discs (IDs). Although these structures have long been known, it is becoming increasingly clear that their components interact. This review describes the involvement of the ID in electrical disturbances of the heart and focuses on the role of the gap junctional protein connexin 43 (Cx43). Current evidence shows that Cx43 plays a crucial role in organizing microtubules at the intercalated disc and thereby regulating the trafficking of the cardiac sodium channel NaV1.5 to the membrane.

  17. Novel Oscillation Period of the Interlayer Exchange Coupling in Fe/Cr/Fe Due to MgO Capping

    Science.gov (United States)

    Halley, D.; Bengone, O.; Boukari, S.; Weber, W.

    2009-01-01

    A novel period of the interlayer exchange coupling as a function of Cr thickness is observed in epitaxial Fe/Cr/Fe (001) sandwiches capped with MgO. This additional period, equal to 3 chromium atomic layers, vanishes when the capping is Cr. A strong oscillation of the magnetic coupling is also observed as a function of the thickness of the Fe layer next to the MgO capping layer. This effect is attributed to the formation of quantum well states in this Fe layer. It is believed that this confinement modifies the reflection coefficient at the Cr/Fe interface for electrons of a particular symmetry and leads to the new coupling period which is linked to the Fermi surface topology of chromium.

  18. Analytical theory of the space-charge region of lateral p-n junctions in nanofilms

    Energy Technology Data Exchange (ETDEWEB)

    Gurugubelli, Vijaya Kumar, E-mail: vkgurugubelli@gmail.com; Karmalkar, Shreepad [Department of Electrical Engineering, Indian Institute of Technology Madras, Chennai 600036 (India)

    2015-07-21

    There is growing interest in fabricating conventional semiconductor devices in a nanofilm which could be a 3D material with one reduced dimension (e.g., silicon-on-insulator (SOI) film), or single/multiple layers of a 2D material (e.g., MoS{sub 2}), or a two dimensional electron gas/two dimensional hole gas (2DEG/2DHG) layer. Lateral p-n junctions are essential parts of these devices. The space-charge region electrostatics in these nanofilm junctions is strongly affected by the surrounding field, unlike in bulk junctions. Current device physics of nanofilms lacks a simple analytical theory of this 2D electrostatics of lateral p-n junctions. We present such a theory taking into account the film's thickness, permittivity, doping, interface charge, and possibly different ambient permittivities on film's either side. In analogy to the textbook theory of the 1D electrostatics of bulk p-n junctions, our theory yields simple formulas for the depletion width, the extent of space-charge tails beyond this width, and the screening length associated with the space-charge layer in nanofilm junctions; these formulas agree with numerical simulations and measurements. Our theory introduces an electrostatic thickness index to classify nanofilms into sheets, bulk and intermediate sized.

  19. Microdissection of Human Esophagogastric Junction Wall with Phase-contrast X-ray CT Imaging

    Science.gov (United States)

    Zhang, Jianfa; Zhou, Guangzhao; Tian, Dongping; Lin, Runhua; Peng, Guanyun; Su, Min

    2015-01-01

    Phase-contrast x-ray imaging using an x-ray interferometer has great potential to reveal the structures inside soft tissues, because the sensitivity of this method to hydrogen, carbon, nitrogen, and oxygen is about 1000 times higher than that of the absorption-contrast x-ray method. In this study, we used phase-contrast X-ray CT to investigate human resected esophagogastric junction. This technology revealed the three-layer structure of the esophagogastric junction wall—mucous, submucosa and muscular layers. The mucous and muscular layers were clearly separated by a loose submucosa layer with a honeycomb appearance. The shape of the mucous and muscular layers was intact. The boundary between the mucous and submucosa layers was distinct, as was the border of the muscular and submucosa layers. The surface of the esophagogastric junction was displayed clearly through 3D reconstruction. The technology might be helpful in the diagnosis of esophagogastric junction lesion, especially for the early adenocarcinoma. PMID:26346099

  20. Electron Transport through Porphyrin Molecular Junctions

    Science.gov (United States)

    Zhou, Qi

    The goal of this work is to study the properties that would affect the electron transport through a porphyrin molecular junction. This work contributes to the field of electron transport in molecular junctions in the following 3 aspects. First of all, by carrying out experiments comparing the conductance of the iron (III) porphyrin (protected) and the free base porphyrin (protected), it is confirmed that the molecular energy level broadening and shifting occurs for porphyrin molecules when coupled with the metal electrodes, and this level broadening and shifting plays an important role in the electron transport through molecular junctions. Secondly, by carrying out an in-situ deprotection of the acetyl-protected free base porphyrin molecules, it is found out that the presence of acetyl groups reduces the conductance. Thirdly, by incorporating the Matrix-assisted laser desorption/ionization (MALDI) spectrum and the in-situ deprotection prior to formation of molecular junctions, it allows a more precise understanding of the molecules involved in the formation of molecular junctions, and therefore allows an accurate analysis of the conductance histogram. The molecules are prepared by self-assembly and the junctions are formed using a Scanning Tunneling Microscopy (STM) molecular break junction technique. The porphyrin molecules are characterized by MALDI in solution before self-assembly to a gold/mica substrate. The self-assembled monolayers (SAMs) of porphyrins on gold are characterized by Ultraviolet-visible (UV-Vis) reflection spectroscopy to confirm that the molecules are attached to the substrate. The SAMs are then characterized by Angle-Resolved X-ray photoelectron spectroscopy (ARXPS) to determine the thickness and the average molecular orientation of the molecular layer. The electron transport is measured by conductance-displacement (G-S) experiments under a given bias (-0.4V). The conductance value of a single molecule is identified by a statistical analysis

  1. Control over Rectification in Supramolecular Tunneling Junctions

    NARCIS (Netherlands)

    Wimbush, K.S.; Wimbush, Kim S.; Reus, William F.; van der Wiel, Wilfred Gerard; Reinhoudt, David; Whitesides, George M.; Nijhuis, C.A.; Velders, Aldrik

    2010-01-01

    In complete control: The magnitude of current rectification in well-defined supramolecular tunneling junctions can be controlled by changing the terminal functionality (red spheres) of dendrimers (gray spheres) immobilized on a supramolecular platform (see picture). Junctions containing biferrocene

  2. The pharmaceutical vial capping process: Container closure systems, capping equipment, regulatory framework, and seal quality tests.

    Science.gov (United States)

    Mathaes, Roman; Mahler, Hanns-Christian; Buettiker, Jean-Pierre; Roehl, Holger; Lam, Philippe; Brown, Helen; Luemkemann, Joerg; Adler, Michael; Huwyler, Joerg; Streubel, Alexander; Mohl, Silke

    2016-02-01

    Parenteral drug products are protected by appropriate primary packaging to protect against environmental factors, including potential microbial contamination during shelf life duration. The most commonly used CCS configuration for parenteral drug products is the glass vial, sealed with a rubber stopper and an aluminum crimp cap. In combination with an adequately designed and controlled aseptic fill/finish processes, a well-designed and characterized capping process is indispensable to ensure product quality and integrity and to minimize rejections during the manufacturing process. In this review, the health authority requirements and expectations related to container closure system quality and container closure integrity are summarized. The pharmaceutical vial, the rubber stopper, and the crimp cap are described. Different capping techniques are critically compared: The most common capping equipment with a rotating capping plate produces the lowest amount of particle. The strength and challenges of methods to control the capping process are discussed. The residual seal force method can characterize the capping process independent of the used capping equipment or CCS. We analyze the root causes of several cosmetic defects associated with the vial capping process.

  3. Modulation of interlayer exchange coupling strength in magnetic tunnel junctions via strain effect

    Directory of Open Access Journals (Sweden)

    Xin Jiang

    2015-09-01

    Full Text Available Interlayer exchange coupling of two ferromagnetic electrodes separated by a thin MgO tunnel barrier is investigated using magneto-optical Kerr effect. We find that the coupling field can be reduced by more than 40% as the thickness of a top Ta capping layer increases from 0.5 to 1.2 nm. In contrast, a similar film stack with an additional 3 nm Ru capping layer displays no such dependence on Ta thickness. Transmission electron microscopy study shows that the oxidation of the exposed Ta capping layer induces changes in the crystalline structures of the underlying films, giving rise to the observed reduction of the interlayer coupling field.

  4. Capping stack: An industry in the making

    Institute of Scientific and Technical Information of China (English)

    Jack Chen; Li Xunke; Xie Wenhui; Kang Yongtian

    2013-01-01

    This paper gives an overview of recent development of the marine well containment system (MWCS)after BP Macondo subsea well blowout occurred on April 20,2010 in the Gulf of Mexico.Capping stack,a hardware utilized to contain blowout well at or near the wellhead is the center piece of MWCS.Accessibility to the dedicated capping stacks is gradually becoming a pre-requirement to obtain the permit for offshore drilling/workover,and the industry for manufacturing,maintenance,transportation and operation of the capping stack is in the making.

  5. Analyses of hydraulic performance of velocity caps

    DEFF Research Database (Denmark)

    Christensen, Erik Damgaard; Degn Eskesen, Mark Chr.; Buhrkall, Jeppe

    2014-01-01

    The hydraulic performance of a velocity cap has been investigated. Velocity caps are often used in connection with offshore intakes. CFD (computational fluid dynamics) examined the flow through the cap openings and further down into the intake pipes. This was combined with dimension analyses...... in order to analyse the effect of different layouts on the flow characteristics. In particular, flow configurations going all the way through the structure were revealed. A couple of suggestions to minimize the risk for flow through have been tested....

  6. Disc-Capped ZnO Nanocombs

    Institute of Scientific and Technical Information of China (English)

    LI Xin; XU chun-xiang; ZHU Guang-Ping; YANG Yi; LIU Jin-Ping; SUN Xiao-Wei; CUI Yi-Ping

    2007-01-01

    Nanocombs with a disc cap structure of ZnO have been synthesized on si substrates by using pure Zinc powders as the source materials based on a vapour-phase transport process.The morphology and the microstructure are investigated by a scanning electron microscopy and x-ray diffraction.Based on the transmission electron microscopy and selected area electron diffraction analysis,the growth directions of three representative parts,nanoribbon stem,nanorod branch and nanodisc cap of the nanocomb are revealed.The growth mechanism of the disc-capped nanocombs is discussed based on the self-catalyzed vapour-liquid-solid process.

  7. Nano-Molecular Junctions on STM Tips

    Institute of Scientific and Technical Information of China (English)

    Chun Huang∗; Jianshu Yang

    2011-01-01

    We present a technique for building metal-organic-metal junctions, which contain ten or fewer conjugated molecules between each of such junction, and the investigations of the I-V response of these junctions. The junctions are made by self assembling thiolated molecules onto gold coated tips for use in scanning tunneling microscopy. We show that this easy technique probes the qualitative properties of the molecules. Current-voltage characteristics of a Tour wire and a new molecular rectifier are presented.

  8. Nano-Molecular Junctions on STM Tips

    Institute of Scientific and Technical Information of China (English)

    Chun Huang; Jianshu Yang

    2011-01-01

    We present a technique for building metal-organic-metal junctions, which contain ten or fewer conjugated molecules between each of such junction, and the investigations of the I-V response of these junctions.The junctions are made by self assembling thiolated molecules onto gold coated tips for use in scanning tunneling microscopy. We show that this easy technique probes the qualitative properties of the molecules. Currentvoltage characteristics of a Tour wire and a new molecular rectifier are presented.

  9. Current noise in tunnel junctions

    Energy Technology Data Exchange (ETDEWEB)

    Frey, Moritz; Grabert, Hermann [Physikalisches Institut, Universitaet Freiburg, Hermann-Herder-Strasse 3, 79104, Freiburg (Germany)

    2017-06-15

    We study current fluctuations in tunnel junctions driven by a voltage source. The voltage is applied to the tunneling element via an impedance providing an electromagnetic environment of the junction. We use circuit theory to relate the fluctuations of the current flowing in the leads of the junction with the voltage fluctuations generated by the environmental impedance and the fluctuations of the tunneling current. The spectrum of current fluctuations is found to consist of three parts: a term arising from the environmental Johnson-Nyquist noise, a term due to the shot noise of the tunneling current and a third term describing the cross-correlation between these two noise sources. Our phenomenological theory reproduces previous results based on the Hamiltonian model for the dynamical Coulomb blockade and provides a simple understanding of the current fluctuation spectrum in terms of circuit theory and properties of the average current. Specific results are given for a tunnel junction driven through a resonator. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  10. Josephson tunnel junction microwave attenuator

    DEFF Research Database (Denmark)

    Koshelets, V. P.; Shitov, S. V.; Shchukin, A. V.

    1993-01-01

    A new element for superconducting electronic circuitry-a variable attenuator-has been proposed, designed, and successfully tested. The principle of operation is based on the change in the microwave impedance of a superconductor-insulator-superconductor (SIS) Josephson tunnel junction when dc bias...

  11. Stability of large-area molecular junctions

    NARCIS (Netherlands)

    Akkerman, Hylke B.; Kronemeijer, Auke J.; Harkema, Jan; van Hal, Paul A.; Smits, Edsger C. P.; de Leeuw, Dago M.; Blom, Paul W. M.

    The stability of molecular junctions is crucial for any application of molecular electronics. Degradation of molecular junctions when exposed to ambient conditions is regularly observed. In this report the stability of large-area molecular junctions under ambient conditions for more than two years

  12. Soliton bunching in annular Josephson junctions

    DEFF Research Database (Denmark)

    Vernik, I.V; Lazarides, Nickos; Sørensen, Mads Peter

    1996-01-01

    By studying soliton (fluxon) motion in long annular Josephson junctions it is possible to avoid the influence of the boundaries and soliton-soliton collisions present in linear junctions. A new experimental design consisting of a niobium coil placed on top of an annular junction has been used...

  13. Long Range Magnetic Interaction between Josephson Junctions

    DEFF Research Database (Denmark)

    Grønbech-Jensen, Niels; Samuelsen, Mogens Rugholm

    1995-01-01

    A new model for magnetic coupling between long Josephson junctions is proposed. The coupling mechanism is a result of the magnetic fields outside the junctions and is consequently effective over long distances between junctions. We give specific expressions for the form and magnitude of the inter...

  14. Dynamics of pi-junction interferometer circuits

    DEFF Research Database (Denmark)

    Kornkev, V.K.; Mozhaev, P.B.; Borisenko, I.V.;

    2002-01-01

    The pi-junction superconducting circuit dynamics was studied by means of numerical simulation technique. Parallel arrays consisting of Josephson junctions of both 0- and pi-type were studied as a model of high-T-c grain-boundary Josephson junction. The array dynamics and the critical current...

  15. Dynamics of pi-junction interferometer circuits

    DEFF Research Database (Denmark)

    Kornkev, V.K.; Mozhaev, P.B.; Borisenko, I.V.

    2002-01-01

    The pi-junction superconducting circuit dynamics was studied by means of numerical simulation technique. Parallel arrays consisting of Josephson junctions of both 0- and pi-type were studied as a model of high-T-c grain-boundary Josephson junction. The array dynamics and the critical current...

  16. Incompressible Turbulent Wing-Body Junction Flow

    Science.gov (United States)

    Krishnamurthy, R.; Cagle, Corey D.; Chandra, S.

    1998-01-01

    measurements in juncture flows around the nose of a wing-body junction. Measured values of mean-velocity and/or turbulence kinetic energy was used to predict the magnitude of the shear stress vector. Algebraic stress models performed the best followed by Cebeci-Smith eddy viscosity model. The flow is reported to be dominated by a pressure field produced by the wing and the velocity field generated by the horseshoe vortex that is wrapped around the junction between the wing and wall. Kubendran et al. conclude from an experimental study that the shape of leading edge of the wing as characterized by its slenderness ratio is a major factor in determining the flow fields in the juncture region. The more thinner the leading edge of the juncture, the weaker the horseshoe vortex is. Also, with a slender leading edge, the secondary flow in the juncture would be due mainly to the cross-stream gradients of Reynolds stresses rather than due to a lateral skewing of the shear layer.

  17. C-CAP Land Cover, Molokai, Hawaii

    Data.gov (United States)

    National Oceanic and Atmospheric Administration, Department of Commerce — This data set consists of land derived from high resolution imagery and was analyzed according to the Coastal Change Analysis Program (C-CAP) protocol to determine...

  18. Chemical synthesis of dinucleotide cap analogs.

    Science.gov (United States)

    Kore, Anilkumar R; Shanmugasundaram, Muthian

    2014-12-19

    This unit describes a reliable, efficient and general method for the synthesis of standard cap analog (mCAP), m(7)G[5']ppp[5']G, and anti-reverse cap analog (ARCA), m(7,3')(O)G[5']ppp[5']G. The synthesis of required intermediate m(7)GDP or m(2)(7,3'O)GDP has been achieved through regioselective methylation of the corresponding diphosphate using dimethyl sulfate under aqueous conditions. Then, the coupling reaction of m(7)GDP or m(2)(7,3'O)GDP with ImGMP using ZnCl(2)/DMF system affords the corresponding cap analog in good yields. Copyright © 2014 John Wiley & Sons, Inc.

  19. Tip cap for a turbine rotor blade

    Science.gov (United States)

    Kimmel, Keith D

    2014-03-25

    A turbine rotor blade with a spar and shell construction, and a tip cap that includes a row of lugs extending from a bottom side that form dovetail grooves that engage with similar shaped lugs and grooves on a tip end of the spar to secure the tip cap to the spar against radial displacement. The lug on the trailing edge end of the tip cap is aligned perpendicular to a chordwise line of the blade in the trailing edge region in order to minimize stress due to the lugs wanting to bend under high centrifugal loads. A two piece tip cap with lugs at different angles will reduce the bending stress even more.

  20. C-CAP Hawaii 2005 Land Cover

    Data.gov (United States)

    National Oceanic and Atmospheric Administration, Department of Commerce — This data set consists of land derived from high resolution imagery and was analyzed according to the Coastal Change Analysis Program (C-CAP) protocol to determine...

  1. C-CAP Land Cover, Kauai, Hawaii

    Data.gov (United States)

    National Oceanic and Atmospheric Administration, Department of Commerce — This data set consists of land derived from high resolution imagery and was analyzed according to the Coastal Change Analysis Program (C-CAP) protocol to determine...

  2. C-CAP Land Cover, Maui, Hawaii

    Data.gov (United States)

    National Oceanic and Atmospheric Administration, Department of Commerce — This data set consists of land derived from high resolution imagery and was analyzed according to the Coastal Change Analysis Program (C-CAP) protocol to determine...

  3. C-CAP Land Cover, Lanai, Hawaii

    Data.gov (United States)

    National Oceanic and Atmospheric Administration, Department of Commerce — This data set consists of land derived from high resolution imagery and was analyzed according to the Coastal Change Analysis Program (C-CAP) protocol to determine...

  4. Cryopyrin-Associated Autoinflammatory Syndromes (CAPS) - Juvenile

    Science.gov (United States)

    ... of the nervous system, including headaches and deafness. CAPS are not contagious. Treatments that block interleukin-1, an important molecule involved in the inflammatory process, are very effective. To prevent permanent damage, treatment ...

  5. C-CAP Land Cover, Niihau, Hawaii

    Data.gov (United States)

    National Oceanic and Atmospheric Administration, Department of Commerce — This data set consists of land derived from high resolution imagery and was analyzed according to the Coastal Change Analysis Program (C-CAP) protocol to determine...

  6. C-CAP Niihau 2005 Land Cover

    Data.gov (United States)

    National Oceanic and Atmospheric Administration, Department of Commerce — This data set consists of land cover derived from high resolution imagery according to the Coastal Change Analysis Program (C-CAP) protocol. This data set utilized 1...

  7. Assessment of Groin Application of Junctional Tourniquets in a Manikin Model.

    Science.gov (United States)

    Kragh, John F; Lunati, Matthew P; Kharod, Chetan U; Cunningham, Cord W; Bailey, Jeffrey A; Stockinger, Zsolt T; Cap, Andrew P; Chen, Jacob; Aden, James K; Cancio, Leopoldo C

    2016-08-01

    Introduction To aid in preparation of military medic trainers for a possible new curriculum in teaching junctional tourniquet use, the investigators studied the time to control hemorrhage and blood volume lost in order to provide evidence for ease of use. Hypothesis Models of junctional tourniquet could perform differentially by blood loss, time to hemostasis, and user preference. In a laboratory experiment, 30 users controlled simulated hemorrhage from a manikin (Combat Ready Clamp [CRoC] Trainer) with three iterations each of three junctional tourniquets. There were 270 tests which included hemorrhage control (yes/no), time to hemostasis, and blood volume lost. Users also subjectively ranked tourniquet performance. Models included CRoC, Junctional Emergency Treatment Tool (JETT), and SAM Junctional Tourniquet (SJT). Time to hemostasis and total blood loss were log-transformed and analyzed using a mixed model analysis of variance (ANOVA) with the users represented as random effects and the tourniquet model used as the treatment effect. Preference scores were analyzed with ANOVA, and Tukey's honest significant difference test was used for all post-hoc pairwise comparisons. All tourniquet uses were 100% effective for hemorrhage control. For blood loss, CRoC and SJT performed best with least blood loss and were significantly better than JETT; in pairwise comparison, CRoC-JETT (P .5, all models). The CRoC and SJT performed best in having least blood loss, CRoC performed best in having least time to hemostasis, and users did not differ in preference of model. Models of junctional tourniquet performed differentially by blood loss and time to hemostasis. Kragh JF Jr , Lunati MP , Kharod CU , Cunningham CW , Bailey JA , Stockinger ZT , Cap AP , Chen J , Aden JK 3d , Cancio LC . Assessment of groin application of junctional tourniquets in a manikin model. Prehosp Disaster Med. 2016;31(4):358-363.

  8. Truncated Dual-Cap Nucleation Site Development

    Science.gov (United States)

    Matson, Douglas M.; Sander, Paul J.

    2012-01-01

    During heterogeneous nucleation within a metastable mushy-zone, several geometries for nucleation site development must be considered. Traditional spherical dual cap and crevice models are compared to a truncated dual cap to determine the activation energy and critical cluster growth kinetics in ternary Fe-Cr-Ni steel alloys. Results of activation energy results indicate that nucleation is more probable at grain boundaries within the solid than at the solid-liquid interface.

  9. Righting an ATLAS end-cap

    CERN Multimedia

    Maximilien Brice

    2003-01-01

    Each component of the giant ATLAS detector must be moved and transported with great caution so that delicate components are not damaged. Therefore, tests are performed, like the one shown. The end-cap weighs 160 tonnes, making the delicate moving process a non-trivial feat. A special crane and supports have been designed so that the end-cap can be raised using a pivot.

  10. Design and implementation of the CAPS receiver

    Science.gov (United States)

    Hu, Yonghui; Hua, Yu; Hou, Lei; Wei, Jingfa; Wu, Jianfeng

    2009-03-01

    In this paper, based on analyses of the Chinese Area Positioning System (CAPS) satellite (GEO satellite) resources and signal properties, the signal power at the port of the receiver antenna is estimated, and the implementation projects are presented for a switching band C to band L CAPS C/A code receiver integrated with GPS receiver suite and for a CAPS dual frequency P code receiver. A microstrip receiving antenna is designed with high sensitivity and wide beam orientation, the RF front end of the C/A code and P code receivers, and a processor is designed for the navigation baseband. A single frequency CAPS C/A code receiver and a CAPS dual frequency P code receiver are built at the same time. A software process flow is provided, and research on relatively key techniques is also conducted, such as signal searching, code loop and carrier loop algorithms, a height assistant algorithm, a dual frequency difference speed measurement technique, a speed measurement technique using a single frequency source with frequency assistance, and a CAPS time correcting algorithm, according to the design frame of the receiver hardware. Research results show that the static plane positioning accuracy of the CAPS C/A code receiver is 20.5-24.6 m, height accuracy is 1.2-12.8 m, speed measurement accuracy is 0.13-0.3 m/s, dynamic plane positioning accuracy is 24.4 m, height accuracy is 3.0 m, and speed measurement accuracy is 0.24 m/s. In the case of C/A code, the timing accuracy is 200 ns, and it is also shown that the positioning accuracy of the CAPS precise code receiver (1 σ) is 5 m from south to north, and 0.8 m from east to west. Finally, research on positioning accuracy is also conducted.

  11. Design and implementation of the CAPS receiver

    Institute of Scientific and Technical Information of China (English)

    2009-01-01

    In this paper, based on analyses of the Chinese Area Positioning System (CAPS) satellite (GEO satellite) resources and signal properties, the signal power at the port of the receiver antenna is estimated, and the implementation projects are presented for a switching band C to band L CAPS C/A code receiver integrated with GPS receiver suite and for a CAPS dual frequency P code receiver. A microstrip receiving antenna is designed with high sensitivity and wide beam orientation, the RF front end of the C/A code and P code receivers, and a processor is designed for the navigation baseband. A single frequency CAPS C/A code receiver and a CAPS dual frequency P code receiver are built at the same time. A software process flow is provided, and research on relatively key techniques is also conducted, such as signal searching, code loop and carrier loop algorithms, a height assistant algorithm, a dual frequency difference speed measurement technique, a speed measurement technique using a single frequency source with frequency assistance, and a CAPS time correcting algorithm, according to the design frame of the receiver hardware. Research results show that the static plane positioning accuracy of the CAPS C/A code receiver is 20.5-24.6 m, height accuracy is 1.2-12.8 m, speed measurement accuracy is 0.13-0.3 m/s, dynamic plane positioning accuracy is 24.4 m, height accuracy is 3.0 m, and speed measurement accuracy is 0.24 m/s. In the case of C/A code, the timing accuracy is 200 ns, and it is also shown that the positioning accuracy of the CAPS precise code receiver (1σ ) is 5 m from south to north, and 0.8 m from east to west. Finally, research on positioning accuracy is also conducted.

  12. Cap-assisted colonoscopy and detection of Adenomatous Polyps (CAP) study: a randomized trial.

    Science.gov (United States)

    Pohl, Heiko; Bensen, Steve P; Toor, Arifa; Gordon, Stuart R; Levy, L Campbell; Berk, Brian; Anderson, Peter B; Anderson, Joseph C; Rothstein, Richard I; MacKenzie, Todd A; Robertson, Douglas J

    2015-10-01

    Cap-assisted colonoscopy has improved adenoma detection in some but not other studies. Most previous studies have been limited by small sample sizes and few participating endoscopists. The aim of the current study was to evaluate whether cap-assisted colonoscopy improves adenoma detection in a two-center, multi-endoscopist, randomized trial. Consecutive patients who presented for an elective colonoscopy were randomized to cap-assisted colonoscopy (4-mm cap) or standard colonoscopy performed by one of 10 experienced endoscopists. Primary outcome measures were mean number of adenomas per patient and adenoma detection rate (ADR). Secondary outcomes included procedural measures and endoscopist variation; a logistic regression model was employed to examine predictors of increased detection with cap use. A total of 1113 patients (64 % male, mean age 62 years) were randomized to cap-assisted (n = 561) or standard (n = 552) colonoscopy. The mean number of adenomas detected per patient in the cap-assisted and standard groups was similar (0.89 vs. 0.82; P = 0.432), as was the ADR (42 % vs. 40 %; P = 0.452). Cap-assisted colonoscopy achieved a faster cecal intubation time (4.9 vs. 5.8 minutes; P Cap-assisted colonoscopy resulted in a 20 % increase in ADR for some endoscopists and in a 15 % decrease for others. Individual preference for the cap was an independent predictor of increased adenoma detection in adjusted analysis (P cap-assisted colonoscopy, adenoma detection was not. Cap-assisted colonoscopy may be beneficial for selected endoscopists. clinicalTrials.gov (NCT01935180). © Georg Thieme Verlag KG Stuttgart · New York.

  13. Synsedimentary deformation and the paleoseismic record in Marinoan cap carbonate of the southern Amazon Craton, Brazil

    Science.gov (United States)

    Soares, Joelson Lima; Nogueira, Afonso César Rodrigues; Domingos, Fábio; Riccomini, Claudio

    2013-12-01

    Event Layers in Neoproterozoic cap carbonates of Brazil's southwestern Amazon Craton record post-Marinoan synsedimentary seismicity. The 35 m-thick cap carbonates overlie glaciogenic sediments related to the Marinoan glaciation (635 Ma) and are comprised of two units: the lower cap consists of dolomite (˜15 m thick) and the upper cap is limestone (˜25 m thick). The cap dolomite includes pinkish crystalline dolostone with even parallel lamination, stratiform stromatolites, eventual tube structures and megaripple bedded peloidal dolostone interpreted as shallow (euphotic) platform deposits. The cap limestone onlaps the cap dolomite and consists of red marl, gray to black bituminous lime mudstone, bituminous shale with abundant calcite crystal fans (pseudomorphs after aragonite) and even parallel lamination interpreted as moderately deep to deep platform deposits. Five successive events of synsedimentary deformation were recognized in the cap carbonates exposed at Mirassol d'Oeste and Tangará da Serra, in Central Brazil: Event 1 - large to small-scale load cast structures in the contact between dolostones and glaciogenic sediments; Event 2 - stromatolitic lamination truncated by tube structures; Event 3 - vertical to subvertical fractures and faults, and large-scale synclines and anticlines with chevron folds; Event 4 - conglomerate and breccia filling neptunian dykes limited by undeformed beds; and Event 5 - slump and sliding deposits found only in the upper part of the cap limestone. Event 1 was produced by hydroplastic dynamics likely induced by isostatic rebound during ice cap melting in the final stages of the Marinoan glaciation. Events 2 and 5 are autocyclic in nature, and related to depositional processes. Event 2 is linked to fluid and methane escape from organic degradation of microbial mats and domes that formed tubestones; Event 5 is associated to collapse and sliding/slumping in the platform and slope. The reliable orientations of synsedimentary faults

  14. Branching in current-voltage characteristics of intrinsic Josephson junctions

    Energy Technology Data Exchange (ETDEWEB)

    Shukrinov, Yu M [BLTP, JINR, Dubna, Moscow Region, 141980 (Russian Federation); Mahfouzi, F [Institute for Advanced Studies in Basic Sciences, PO Box 45195-1159, Zanjan (Iran, Islamic Republic of)

    2007-02-15

    We study branching in the current-voltage characteristics of the intrinsic Josephson junctions of high-temperature superconductors in the framework of the capacitively coupled Josephson junction model with diffusion current. A system of dynamical equations for the gauge-invariant phase differences between superconducting layers for a stack of ten intrinsic junctions has been numerically solved. We have obtained a total branch structure in the current-voltage characteristics. We demonstrate the existence of a 'breakpoint region' on the current-voltage characteristics and explain it as a result of resonance between Josephson and plasma oscillations. The effect of the boundary conditions is investigated. The existence of two outermost branches and correspondingly two breakpoint regions for the periodic boundary conditions is shown. One branch, which is observed only at periodic boundary conditions, corresponds to the propagating of the plasma mode. The second one corresponds to the situation when the charge oscillations on the superconducting layers are absent, excluding the breakpoint. A time dependence of the charge oscillations at breakpoints is presented.

  15. Breathing charge density waves in intrinsic Josephson junctions

    Science.gov (United States)

    Shukrinov, Yu. M.; Abdelhafiz, H.

    2014-01-01

    We demonstrate the creation of a charge density wave (CDW) along a stack of coupled Josephson junctions (JJs) in layered superconductors. Electric charge in each superconducting layer oscillates around some average value, forming a breathing CDW. We show the transformation of a longitudinal plasma wave to CDW in the state corresponding to the outermost branch. Transition between different types of CDW's related to the inner branches of IV characteristic is demonstrated. The effect of the external electromagnetic radiation on the states corresponding to the inner branches differs crucially from the case of the single JJ. The Shapiro steps in the IV characteristics of the junctions in the stack do not correspond directly to the frequency of radiation ω. The system of JJs behaves like a single whole system: the Shapiro steps or their harmonics in the total IV characteristics appear at voltage , where V l is the voltage in the lth junction, N R is the number of JJs in the rotating state, and m and n are integers.

  16. Branching in current voltage characteristics of intrinsic Josephson junctions

    Science.gov (United States)

    Shukrinov, Yu M.; Mahfouzi, F.

    2007-02-01

    We study branching in the current-voltage characteristics of the intrinsic Josephson junctions of high-temperature superconductors in the framework of the capacitively coupled Josephson junction model with diffusion current. A system of dynamical equations for the gauge-invariant phase differences between superconducting layers for a stack of ten intrinsic junctions has been numerically solved. We have obtained a total branch structure in the current-voltage characteristics. We demonstrate the existence of a 'breakpoint region' on the current-voltage characteristics and explain it as a result of resonance between Josephson and plasma oscillations. The effect of the boundary conditions is investigated. The existence of two outermost branches and correspondingly two breakpoint regions for the periodic boundary conditions is shown. One branch, which is observed only at periodic boundary conditions, corresponds to the propagating of the plasma mode. The second one corresponds to the situation when the charge oscillations on the superconducting layers are absent, excluding the breakpoint. A time dependence of the charge oscillations at breakpoints is presented.

  17. Internal photoemission in molecular junctions: parameters for interfacial barrier determinations.

    Science.gov (United States)

    Fereiro, Jerry A; Kondratenko, Mykola; Bergren, Adam Johan; McCreery, Richard L

    2015-01-28

    The photocurrent spectra for large-area molecular junctions are reported, where partially transparent copper top contacts permit illumination by UV-vis light. The effect of variation of the molecular structure and thickness are discussed. Internal photoemission (IPE), a process involving optical excitation of hot carriers in the contacts followed by transport across internal system barriers, is dominant when the molecular component does not absorb light. The IPE spectrum contains information regarding energy level alignment within a complete, working molecular junction, with the photocurrent sign indicating transport through either the occupied or unoccupied molecular orbitals. At photon energies where the molecular layer absorbs, a secondary phenomenon is operative in addition to IPE. In order to distinguish IPE from this secondary mechanism, we show the effect of the source intensity as well as the thickness of the molecular layer on the observed photocurrent. Our results clearly show that the IPE mechanism can be differentiated from the secondary mechanism by the effects of variation of experimental parameters. We conclude that IPE can provide valuable information regarding interfacial energetics in intact, working molecular junctions, including clear discrimination of charge transport mediated by electrons through unoccupied system orbitals from that mediated by hole transport through occupied system orbitals.

  18. Assembling molecular electronic junctions one molecule at a time.

    Science.gov (United States)

    Bonifas, Andrew P; McCreery, Richard L

    2011-11-01

    Diffusion of metal atoms onto a molecular monolayer attached to a conducting surface permits electronic contact to the molecules with minimal heat transfer or structural disturbance. Surface-mediated metal deposition (SDMD) involves contact between "cold" diffusing metal atoms and molecules, due to shielding of the molecules from direct exposure to metal vapor. Measurement of the current through the molecular layer during metal diffusion permits observation of molecular conductance for junctions containing as few as one molecule. Discrete conductance steps were observed for 1-10 molecules within a monolayer during a single deposition run, corresponding to "recruitment" of additional molecules as the contact area between the diffusing Au layer and molecules increases. For alkane monolayers, the molecular conductance measured with SDMD exhibited an exponential dependence on molecular length with a decay constant (β) of 0.90 per CH(2) group, comparable to that observed by other techniques. Molecular conductance values were determined for three azobenzene molecules, and correlated with the offset between the molecular HOMO and the contact Fermi level, as expected for hole-mediated tunneling. Current-voltage curves were obtained during metal deposition showed no change in shape for junctions containing 1, 2, and 10 molecules, implying minimal intermolecular interactions as single molecule devices transitioned into several molecules devices. SDMD represents a "soft" metal deposition method capable of providing single molecule conductance values, then providing quantitative comparisons to molecular junctions containing 10(6) to 10(10) molecules.

  19. Octagonal Defects at Carbon Nanotube Junctions

    Directory of Open Access Journals (Sweden)

    W. Jaskólski

    2013-01-01

    Full Text Available We investigate knee-shaped junctions of semiconductor zigzag carbon nanotubes. Two dissimilar octagons appear at such junctions; one of them can reconstruct into a pair of pentagons. The junction with two octagons presents two degenerate localized states at Fermi energy (EF. The reconstructed junction has only one state near EF, indicating that these localized states are related to the octagonal defects. The inclusion of Coulomb interaction splits the localized states in the junction with two octagons, yielding an antiferromagnetic system.

  20. Nb/NiCu bilayers in single and stacked superconductive tunnel junctions: preliminary results

    Science.gov (United States)

    Pepe, G. P.; Ruotolo, A.; Parlato, L.; Peluso, G.; Ausanio, G.; Carapella, G.; Latempa, R.

    2004-05-01

    We present preliminary experimental results concerning both single and stacked tunnel junctions in which one of the electrodes was formed by a superconductor/ferromagnet (S/F) bi-layer. In particular, in the stacked configuration a Nb/NiCu bi-layer was used as the intermediate electrode, and it was probed by tunneling on both sides. Tunnel junctions have been characterized in terms of current-voltage characteristics (IVC), and differential conductance. Preliminary steady-state injection-detection measurements performed in the stacked devices at T=4.2K are also presented and discussed.

  1. Nb/NiCu bilayers in single and stacked superconductive tunnel junctions: preliminary results

    Energy Technology Data Exchange (ETDEWEB)

    Pepe, G.P. E-mail: ruotolo_antonio@tin.it; Ruotolo, A.; Parlato, L.; Peluso, G.; Ausanio, G.; Carapella, G.; Latempa, R

    2004-05-01

    We present preliminary experimental results concerning both single and stacked tunnel junctions in which one of the electrodes was formed by a superconductor/ferromagnet (S/F) bi-layer. In particular, in the stacked configuration a Nb/NiCu bi-layer was used as the intermediate electrode, and it was probed by tunneling on both sides. Tunnel junctions have been characterized in terms of current-voltage characteristics (IVC), and differential conductance. Preliminary steady-state injection-detection measurements performed in the stacked devices at T=4.2 K are also presented and discussed.

  2. Investigation of acceptor states in ZnO by junction DLTS

    Science.gov (United States)

    von Wenckstern, H.; Pickenhain, R.; Schmidt, H.; Brandt, M.; Biehne, G.; Lorenz, M.; Grundmann, M.; Brauer, G.

    2007-07-01

    We have realized a p-type ZnO surface layer by N + ion implantation of a high quality ZnO wafer and subsequent annealing. The conduction type of this surface layer was revealed by scanning capacitance microscopy. Rectifying current-voltage characteristics for processed devices were coherent with the existence of an internal pn junction. Deep donor- and acceptor-like defects were investigated by junction deep level transient spectroscopy. The donor-like levels correspond to those commonly observed for E1 and E3 defects. The acceptor states resolved have thermal activation energies of about 150 meV and 280 meV, respectively.

  3. Selective permeability of gap junction channels.

    Science.gov (United States)

    Goldberg, Gary S; Valiunas, Virginijus; Brink, Peter R

    2004-03-23

    Gap junctions mediate the transfer of small cytoplasmic molecules between adjacent cells. A family of gap junction proteins exist that form channels with unique properties, and differ in their ability to mediate the transfer of specific molecules. Mutations in a number of individual gap junction proteins, called connexins, cause specific human diseases. Therefore, it is important to understand how gap junctions selectively move molecules between cells. Rules that dictate the ability of a molecule to travel through gap junction channels are complex. In addition to molecular weight and size, the ability of a solute to transverse these channels depends on its net charge, shape, and interactions with specific connexins that constitute gap junctions in particular cells. This review presents some data and interpretations pertaining to mechanisms that govern the differential transfer of signals through gap junction channels.

  4. Water balance of two earthen landfill caps in a semi-arid climate

    Energy Technology Data Exchange (ETDEWEB)

    Khire, M.V. [GeoSyntec Consultants, Boca Raton, FL (United States); Benson, C.H.; Bosscher, P.J. [Univ. of Wisconsin, Madison, WI (United States)

    1997-12-31

    Water balance data are presented that were obtained from two earthen cap test sections located in a semi-arid region. The test sections were constructed on a municipal solid waste landfill in East Wenatchee, Washington, USA. One test section represents a traditional resistive barrier, and is constructed with a compacted silty clay barrier 60 cm thick and a vegetated silty clay surface layer 15 cm thick. The other test section represents a capillary barrier and has a sand layer 75 cm thick overlain by a 15-cm-thick vegetated surface layer of silt. Extensive hydrological and meteorological data have been collected since November 1992. Unsaturated hydraulic properties of soils, hydrologic parameters, and vegetation have been extensively characterized. Results of the study show that capillary barriers can be effective caps in semi-arid and arid regions. They are also cheaper to construct and can perform better than traditional resistive barriers.

  5. Minimization of the energy costs for operating magnetic tunnel junctions

    Science.gov (United States)

    Farhat, Ilyas A. H.; Gale, E.; Isakovic, A. F.

    2015-03-01

    Increasing prospects of utilizing the STT-MRAM calls for the re-assessment of the overall energy (power) cost of operating magnetic tunnel junctions and related elements. This motivates our design, nanofabrication and characterization of simple tri-layer magnetic tunnel junctions which show measurable decrease in the operating energy cost. The MTJs we report about rely on nanoengineering interfaces between the insulating and magnetic layers in such a way that the area of the hysteresis loops can be controlled in one or both magnetic layers. Our TMR coefficient ranges from 45% to 130%, depending on the MTJ layer materials, and can be anticipated to be further increased. We also report the study of the TMR dependence on the RA product, as an important interface parameter. Lastly, we present an analysis of MTJ parameters affected by our approach and a perspective on further improvements, focusing on the device design parameters relevant for the integration of this type of MTJs. This work is supported by the SRC-ATIC Grant 2012-VJ-2335. A part of this work is being performed at Cornell University CNF, a member of NNIN. We thank CNF staff for the support.

  6. High efficiency triple-junction amorphous solar cells

    Science.gov (United States)

    Ishihara, T.; Terazono, S.; Sasaki, H.; Kawabata, K.; Itagaki, T.

    A fabrication technique for high-efficiency triple-junction a-SiGe:H and a-Si:H pin solar cells is described. The interfacial characteristics of the a-SiGe:H pin cell, which is used for the bottom cell, have been improved by inserting graded bandgap layers at both p/i and n/i interfaces. The photoconductivity of the a-SiGe:H film, prepared by diluting the silane and germane discharge with a large amount of H2 gas, has also been improved. For the a-Si:H pin cell, Vocs as high as 0.99 V have been achieved by optimizing deposition conditions for the microc-Si:H p-layer and a-Si:H i-layer. Thickness of each layer in the triple-junction cell has been adjusted to get maximum output current. A cell with conversion efficiency of 10.6 percent has been obtained for a cell size of 100 sq cm.

  7. Large voltage modulation in superconducting quantum interference devices with submicron-scale step-edge junctions

    Science.gov (United States)

    Lam, Simon K. H.

    2017-09-01

    A promising direction to improve the sensitivity of a SQUID is to increase its junction's normal resistance value, Rn, as the SQUID modulation voltage scales linearly with Rn. As a first step to develop highly sensitive single layer SQUID, submicron scale YBCO grain boundary step edge junctions and SQUIDs with large Rn were fabricated and studied. The step-edge junctions were reduced to submicron scale to increase their Rn values using focus ion beam, FIB and the measurement of transport properties were performed from 4.3 to 77 K. The FIB induced deposition layer proves to be effective to minimize the Ga ion contamination during the FIB milling process. The critical current-normal resistance value of submicron junction at 4.3 K was found to be 1-3 mV, comparable to the value of the same type of junction in micron scale. The submicron junction Rn value is in the range of 35-100 Ω, resulting a large SQUID modulation voltage in a wide temperature range. This performance promotes further investigation of cryogen-free, high field sensitivity SQUID applications at medium low temperature, e.g. at 40-60 K.

  8. Borel-Moore homology and cap product operations

    OpenAIRE

    Hanamura, Masaki

    2016-01-01

    We show that, for a simplicial complex, the supported cap product operation on Borel-Moore homology coincides with the supported cap product on simplicial homology. For this purpose we introduce the supported cap product for locally finite singular homology, and compare the cap product on the three homology theories.

  9. 42 CFR 418.309 - Hospice cap amount.

    Science.gov (United States)

    2010-10-01

    ... 42 Public Health 3 2010-10-01 2010-10-01 false Hospice cap amount. 418.309 Section 418.309 Public...) MEDICARE PROGRAM HOSPICE CARE Payment for Hospice Care § 418.309 Hospice cap amount. The hospice cap amount is calculated using the following procedures: (a) The cap amount is $6,500 per year and is adjusted...

  10. Anti-pp,. cap alpha cap alpha. and p. cap alpha. elastic scattering at high energies and Chou-Yang conjecture

    Energy Technology Data Exchange (ETDEWEB)

    Saleem, M.; Fazal-e-Aleem; Rifique, M.

    1987-03-01

    The recent experimental measurements for anti-pp and ..cap alpha cap alpha.. elastic scattering at high energies have shown that the Chou-Yang conjecture regarding the relationship between the electromagnetic and the hadronic form factor of a particle is only an approximation. A new ansatz has been proposed to obtain hadronic form factors of proton and the ..cap alpha..-particle. These form factors have been used to explain the various characteristics of anti-pp, ..cap alpha cap alpha.. and p..cap alpha.. elastic scattering at high energies.

  11. Seebeck effect in molecular junctions

    Science.gov (United States)

    Zimbovskaya, Natalya A.

    2016-05-01

    Advances in the fabrication and characterization of nanoscale systems presently allow for a better understanding of their thermoelectric properties. As is known, the building blocks of thermoelectricity are the Peltier and Seebeck effects. In the present work we review results of theoretical studies of the Seebeck effect in single-molecule junctions and similar systems. The behavior of thermovoltage and thermopower in these systems is controlled by several factors including the geometry of molecular bridges, the characteristics of contacts between the bridge and the electrodes, the strength of the Coulomb interactions between electrons on the bridge, and of electron-phonon interactions. We describe the impact of these factors on the thermopower. Also, we discuss a nonlinear Seebeck effect in molecular junctions.

  12. Electron transport in molecular junctions

    DEFF Research Database (Denmark)

    Jin, Chengjun

    This thesis addresses the electron transport in molecular junctions, focusing on the energy level alignment and correlation effects. Various levels of theory have been applied to study the structural and electronic effects in different molecular junctions, starting from the single particle density...... charge position are in quantitative agreement with the experiments, while pure DFT is not. This is the consequence of the accurate energy level alignment, where the DFT+∑ method corrects the self-interaction error in the standard DFT functional and uses a static image charge model to include the image...... charge effect on the energy level renormalization. Additionally, the gating of the 4,4’-bipyridine (44BP) molecule contacted to either Ni or Au electrodes has been investigated. Here it is found that the gating mechanism is conceptually different between two cases. In the case of Ni contacts where...

  13. How coherent are Josephson junctions?

    CERN Document Server

    Paik, Hanhee; Bishop, Lev S; Kirchmair, G; Catelani, G; Sears, A P; Johnson, B R; Reagor, M J; Frunzio, L; Glazman, L; Schoelkopf, R J

    2011-01-01

    Attaining sufficient coherence is a requirement for realizing a large-scale quantum computer. We present a new implementation of a superconducting transmon qubit that is strongly coupled to a three-dimensional superconducting cavity. We observe a reproducible increase in the coherence times of qubit (both $T_1$ and $T_2$ > 10 microseconds) and cavity ($T_{cav}$ ~ 50 microseconds) by more than an order of magnitude compared to the current state-of-art superconducting qubits. This enables the study of the stability and quality of Josephson junctions at precisions exceeding one part per million. Surprisingly, we see no evidence for $1/f$ critical current noise. At elevated temperatures, we observe the dissipation due to a small density (< 1 - 10 ppm) of thermally-excited quasiparticles. The results suggest that the overall quality of Josephson junctions will allow error rates of a few $10^{-4}$, approaching the error correction threshold.

  14. Morphogenesis of rat myotendinous junction.

    Science.gov (United States)

    Curzi, Davide; Ambrogini, Patrizia; Falcieri, Elisabetta; Burattini, Sabrina

    2013-10-01

    Myotendinous junction (MTJ) is the highly specialized complex which connects the skeletal muscle to the tendon for transmitting the contractile force between the two tissues. The purpose of this study was to investigate the MTJ development and rat EDL was chosen as a model. 1, 15, 30 day animals were considered and the junctions were analyzed by light and electron microscopy. The MTJ interface architecture increased during the development, extending the interaction between muscle and tendon. 1-day-old rats showed disorganized myofibril bundles, spread cytosol and incomplete rough endoplasmic reticulum, features partially improved in 15-day-old rats, and completely developed in 30-day-old animals. These findings indicate that muscle-tendon interface displays, during rat lifetime, numerically increased and longer tendon interdigitations, correlated with an improved organization of both tissues and with a progressive acquirement of full functionality.

  15. Double resonance in the system of coupled Josephson junctions

    Science.gov (United States)

    Shukrinov, Yu. M.; Rahmonov, I. R.; Kulikov, K. V.

    2013-01-01

    The effect of LC shunting on the phase dynamics of coupled Josephson junctions has been examined. It has been shown that additional ( rc) branches appear in the current-voltage characteristics of the junctions when the Josephson frequency ωJ is equal to the natural frequency of the formed resonance circuit ωrc. The effect of the parameters of the system on its characteristics has been studied. Double resonance has been revealed in the system at ωJ = ωrc = 2ωLPW, where ωLPW is the frequency of a longitudinal plasma wave appearing under the parametric-resonance conditions. In this case, electric charge appears in superconducting layers in the interval of the bias current corresponding to the rc branch. The charge magnitude is determined by the accuracy with which the double resonance condition is satisfied. The possibility of the experimental implementation of the effects under study has been estimated.

  16. Three-dimensional Myoarchitecture of Porcine Esophago-Gastric Junction with Diffusion Tensor Imaging. Selected for poster presentation

    DEFF Research Database (Denmark)

    Gregersen, Hans; Liao, Donghua; Zhao, Jingbo

    Introduction: The anatomy and function of the esophago-gastric junction (EGJ) is complex with mucosa-submucosa layers and smooth muscle layers organized into circular and longitudinal muscle layers. These layers continue from the esophagus into the EGJ and the stomach. Furthermore, the crura of t...... an anatomical-functional realistic computer model of the EGJ.......Introduction: The anatomy and function of the esophago-gastric junction (EGJ) is complex with mucosa-submucosa layers and smooth muscle layers organized into circular and longitudinal muscle layers. These layers continue from the esophagus into the EGJ and the stomach. Furthermore, the crura...... of the diaphragm and the lower esophageal sphincter are components of the EGJ. Little is known about the microstructure of the EGJ. Diffusion tensor imaging (DTI) allows mapping of the diffusion process of molecules, mainly water, in biological tissues. Aims: This study aims to reconstruct an anatomically...

  17. Model-based cap thickness and peak cap stress prediction for carotid MRI.

    Science.gov (United States)

    Kok, Annette M; van der Lugt, Aad; Verhagen, Hence J M; van der Steen, Antonius F W; Wentzel, Jolanda J; Gijsen, Frank J H

    2017-07-26

    A rupture-prone carotid plaque can potentially be identified by calculating the peak cap stress (PCS). For these calculations, plaque geometry from MRI is often used. Unfortunately, MRI is hampered by a low resolution, leading to an overestimation of cap thickness and an underestimation of PCS. We developed a model to reconstruct the cap based on plaque geometry to better predict cap thickness and PCS. We used histological stained plaques from 34 patients. These plaques were segmented and served as the ground truth. Sections of these plaques contained 93 necrotic cores with a cap thickness Caps below the MRI resolution (n=31) were (digitally removed and) reconstructed according to the geometry-based model. Cap thickness and PCS were determined for the ground truth, readers, and reconstructed geometries. Cap thickness was 0.07mm for the ground truth, 0.23mm for the readers, and 0.12mm for the reconstructed geometries. The model predicts cap thickness significantly better than the readers. PCS was 464kPa for the ground truth, 262kPa for the readers and 384kPa for the reconstructed geometries. The model did not predict the PCS significantly better than the readers. The geometry-based model provided a significant improvement for cap thickness estimation and can potentially help in rupture-risk prediction, solely based on cap thickness. Estimation of PCS estimation did not improve, probably due to the complex shape of the plaques. Copyright © 2017 The Author(s). Published by Elsevier Ltd.. All rights reserved.

  18. Simulation of the Efficiency of CdS/CdTe Tandem Multi-Junction Solar Cells

    CERN Document Server

    Mirkamali, Ashrafalsadat S

    2016-01-01

    In this paper we study CdS/CdTe solar cells by means of AMPS-1D software. First we study the effect of thickness of semiconductor layers on the output parameters of the CdS/CdTe solar cell, such as density of short-circuit current, open circuit voltage, fill factor and efficiency. Numerical simulation shows that the highest efficiency of single-junction CdS/CdTe solar cell equal to 18.3% is achieved when the CdTe layer thickness is 1000 nm and a CdS layer is 60 nm. Then, in order to obtain the maximal value of the efficiency, new tandem multi-junction structure consisting of layers of two solar cells connected with each other back to back are designed and engineered taking into account the results obtained for the single-junction solar cells. Numerical simulations show that its highest efficiency in 31.8% can be obtained when the thickness of CdS p-layer is equal to 50 nm, and the thickness of the CdS n-layer is equal to 200 nm, while thicknesses of the CdTe n-layer and CdTe p-layer are kept fixed and equal t...

  19. Excimer laser annealing: A gold process for CZ silicon junction formation

    Science.gov (United States)

    Wong, David C.; Bottenberg, William R.; Byron, Stanley; Alexander, Paul

    A cold process using an excimer laser for junction formation in silicon has been evaluated as a way to avoid problems associated with thermal diffusion. Conventional thermal diffusion can cause bulk precipitation of SiOx and SiC or fail to completely activate the dopant, leaving a degenerate layer at the surface. Experiments were conducted to determine the feasibility of fabricating high quality p-n junctions using a pulsed excimer laser for junction formation at remelt temperature with ion-implanted surfaces. Solar-cell efficiency exceeding 16 percent was obtained using Czochralski single-crystal silicon without benefit of back surface field or surface passivation. Characterization shows that the formation of uniform, shallow junctions (approximately 0.25 micron) by excimer laser scanning preserves the minority carrier lifetime that leads to high current collection. However, the process is sensitive to initial surface conditions and handling parameters that drive the cost up.

  20. Effect of junction depth on the performance of a diffused n+p silicon solar cell

    Science.gov (United States)

    Caleb Dhanasekaran, P.; Gopalam, B. S. V.

    1981-12-01

    A detailed numerical analysis of the influence of the junction depth on the performance of a diffused n+p silicon solar cell is presented. The analysis includes the effects of Fermi-Dirac statistics, band gap narrowing, a finite surface recombination velocity and the built-in field due to the impurity profile. The recombination mechanism plays a dominant role in the performance of the solar cell. The ideality factor, " a", varies from 1.006 for 0.1 μm junction depth, to 1.0135 for 2 μm junction depth. The saturation current density, Jo increases with the junction depth showing that the recombination increases in the heavily doped diffused layer of the device. The variation of the light generated current, JL, the open-circuit voltage, Voc, efficiency, η and the ideality factor, " a" are reported and analysed.