WorldWideScience

Sample records for junction based magnetic

  1. Magnetic tunnel junction based spintronic logic devices

    Science.gov (United States)

    Lyle, Andrew Paul

    The International Technology Roadmap for Semiconductors (ITRS) predicts that complimentary metal oxide semiconductor (CMOS) based technologies will hit their last generation on or near the 16 nm node, which we expect to reach by the year 2025. Thus future advances in computational power will not be realized from ever-shrinking device sizes, but rather by 'outside the box' designs and new physics, including molecular or DNA based computation, organics, magnonics, or spintronic. This dissertation investigates magnetic logic devices for post-CMOS computation. Three different architectures were studied, each relying on a different magnetic mechanism to compute logic functions. Each design has it benefits and challenges that must be overcome. This dissertation focuses on pushing each design from the drawing board to a realistic logic technology. The first logic architecture is based on electrically connected magnetic tunnel junctions (MTJs) that allow direct communication between elements without intermediate sensing amplifiers. Two and three input logic gates, which consist of two and three MTJs connected in parallel, respectively were fabricated and are compared. The direct communication is realized by electrically connecting the output in series with the input and applying voltage across the series connections. The logic gates rely on the fact that a change in resistance at the input modulates the voltage that is needed to supply the critical current for spin transfer torque switching the output. The change in resistance at the input resulted in a voltage margin of 50--200 mV and 250--300 mV for the closest input states for the three and two input designs, respectively. The two input logic gate realizes the AND, NAND, NOR, and OR logic functions. The three input logic function realizes the Majority, AND, NAND, NOR, and OR logic operations. The second logic architecture utilizes magnetostatically coupled nanomagnets to compute logic functions, which is the basis of

  2. L10-MnGa based magnetic tunnel junction for high magnetic field sensor

    Science.gov (United States)

    Zhao, X. P.; Lu, J.; Mao, S. W.; Yu, Z. F.; Wang, H. L.; Wang, X. L.; Wei, D. H.; Zhao, J. H.

    2017-07-01

    We report on the investigation of the magnetic tunnel junction structure designed for high magnetic field sensors with a perpendicularly magnetized L10-MnGa reference layer and an in-plane magnetized Fe sensing layer. A large linear tunneling magnetoresistance ratio up to 27.4% and huge dynamic range up to 5600 Oe have been observed at 300 K, with a low nonlinearity of 0.23% in the optimized magnetic tunnel junction (MTJ). The field response of tunneling magnetoresistance is discussed to explain the field sensing properties in the dynamic range. These results indicate that L10-MnGa based orthogonal MTJ is a promising candidate for a high performance magnetic field sensor with a large dynamic range, high endurance and low power consumption.

  3. Magnetoresistance of galfenol-based magnetic tunnel junction

    Science.gov (United States)

    Gobaut, B.; Vinai, G.; Castán-Guerrero, C.; Krizmancic, D.; Rafaqat, H.; Roddaro, S.; Rossi, G.; Panaccione, G.; Eddrief, M.; Marangolo, M.; Torelli, P.

    2015-12-01

    The manipulation of ferromagnetic layer magnetization via electrical pulse is driving an intense research due to the important applications that this result will have on memory devices and sensors. In this study we realized a magnetotunnel junction in which one layer is made of Galfenol (Fe1-xGax) which possesses one of the highest magnetostrictive coefficient known. The multilayer stack has been grown by molecular beam epitaxy and e-beam evaporation. Optical lithography and physical etching have been combined to obtain 20x20 micron sized pillars. The obtained structures show tunneling conductivity across the junction and a tunnel magnetoresistance (TMR) effect of up to 11.5% in amplitude.

  4. Magnetoresistance of galfenol-based magnetic tunnel junction

    Energy Technology Data Exchange (ETDEWEB)

    Gobaut, B., E-mail: benoit.gobaut@elettra.eu [Sincrotrone Trieste S.C.p.A., S.S. 14 Km 163.5, Area Science Park, 34149 Trieste (Italy); Vinai, G.; Castán-Guerrero, C.; Krizmancic, D.; Panaccione, G.; Torelli, P. [Laboratorio TASC, IOM-CNR, S.S. 14km 163.5, Basovizza, 34149 Trieste (Italy); Rafaqat, H. [Laboratorio TASC, IOM-CNR, S.S. 14km 163.5, Basovizza, 34149 Trieste (Italy); ICTP, Trieste (Italy); Roddaro, S. [Laboratorio TASC, IOM-CNR, S.S. 14km 163.5, Basovizza, 34149 Trieste (Italy); NEST, Scuola Normale Superiore and Istituto Nanoscienze-CNR, Piazza S. Silvestro 12, 56127 Pisa (Italy); Rossi, G. [Laboratorio TASC, IOM-CNR, S.S. 14km 163.5, Basovizza, 34149 Trieste (Italy); Dipartimento di Fisica, Università di Milano, via Celoria 16, 20133 Milano (Italy); Eddrief, M.; Marangolo, M. [Sorbonne Universités, UPMC Paris 06, CNRS-UMR 7588, Institut des Nanosciences de Paris, 75005, Paris (France)

    2015-12-15

    The manipulation of ferromagnetic layer magnetization via electrical pulse is driving an intense research due to the important applications that this result will have on memory devices and sensors. In this study we realized a magnetotunnel junction in which one layer is made of Galfenol (Fe{sub 1-x}Ga{sub x}) which possesses one of the highest magnetostrictive coefficient known. The multilayer stack has been grown by molecular beam epitaxy and e-beam evaporation. Optical lithography and physical etching have been combined to obtain 20x20 micron sized pillars. The obtained structures show tunneling conductivity across the junction and a tunnel magnetoresistance (TMR) effect of up to 11.5% in amplitude.

  5. Detection of HIV-1 antigen based on magnetic tunnel junction sensor and magnetic nanoparticles

    CERN Document Server

    Li, L; Zhou, Y; Pong, P W T

    2016-01-01

    In recent years, it is evidenced that the individuals newly infected HIV are transmitting the virus prior to knowing their HIV status. Identifying individuals that are early in infection with HIV antibody negative (window period) remains problematic. In the newly infected individuals, HIV antigen p24 is usually present in their serum or plasma 7-10 days before the HIV antibody. After antibody production initiates, the p24 antigen is bound into immune complexes. That means the detectable p24 antigens in serum/plasma are short-lived, and their amount is in the pg/ml range. Thus, a rapid quantitative bio-detection system with high-sensitivity is required to achieve early disease diagnosis. Magnetoresistive (MR) biosensor with ultra-high sensitivity possesses great potential in this area. In this study, a p24 detection assay using MgO-based magnetic tunnel junction (MTJ) sensor and 20-nm magnetic nanoparticles is reported.

  6. Experimental investigations of SiO{sub 2} based ferrite magnetic tunnel junction

    Energy Technology Data Exchange (ETDEWEB)

    Ravi, S., E-mail: sravi@mepcoeng.ac.in [Department of Physics, Mepco Schlenk Engineering College, Sivakasi (India); Karthikeyan, A. [Department of Physics, Mepco Schlenk Engineering College, Sivakasi (India); Aravindan, V. [Energy Research Institute, Nanyang Technological University (Singapore); Pugazhvadivu, K.S.; Tamilarasan, K. [Department of Physics, Kongu Engineering College, Perundurai (India)

    2013-09-01

    Highlights: • CoFe{sub 2}O{sub 4}/SiO{sub 2}/Co–NiFe{sub 2}O{sub 4} magnetic junction was fabricated using RF/DC sputtering. • Spin transport through nanostructure silicon oxide with ferrite as free and pinned layer is our first report. • Magnetization studies were done to justify the free layer and pinned layer for our multilayer. • Magnetoresistance behavior shows a sharp discriminating between parallel and antiparallel alignment with TMR value of 16%. -- Abstract: We report experimental results of ferrite based magnetic tunnel junction. Ferrite junction and spin transport through SiO{sub 2} were interesting since they can readily replace the conventional electronics. We fabricated a cobalt ferrite/SiO{sub 2}/cobalt nickel ferrite based magnetic tunnel junction over a copper coated n-silicon substrate using a RF/DC magnetron sputtering. The tunneling magnetoresistance shows a very good response to applied field and we achieved a TMR of about 16%. Although theoretically it was predicted infinite TMR for half metallic ferromagnetic junction, the deviation was explained on the basis of incoherent scattering along the interfaces.

  7. Magnetism of Semiconductor-Based Magnetic Tunnel Junctions under Electric Field from First Principles

    Energy Technology Data Exchange (ETDEWEB)

    Kan, E.; Xiang, H.; Yang, J.; Whangbo, M. H.

    2009-06-01

    Semiconductor magnetic tunnel junctions (MTJs), composed of diluted magnetic semiconductors (DMSs) sandwiching a semiconductor barrier, have potential applications in spintronics but their development has been slow due to the difficulty of controlling the magnetism of DMSs. In terms of density functional calculations for model semiconductor MTJs, (Zn,Co)O/ZnO/(Zn,Co)O and (Ga,Mn)N/GaN/(Ga,Mn)N, we show that the magnetic coupling between the transition metal ions in each DMS electrode of such semiconductor MTJs can be switched from ferromagnetic to antiferromagnetic, or vice versa, under the application of external electric field across the junctions. Our results suggest a possible avenue for the application of semiconductor MTJs.

  8. CMOS Interface Circuits for Spin Tunneling Junction Based Magnetic Random Access Memories

    Energy Technology Data Exchange (ETDEWEB)

    Ganesh Saripalli

    2002-12-31

    Magneto resistive memories (MRAM) are non-volatile memories which use magnetic instead of electrical structures to store data. These memories, apart from being non-volatile, offer a possibility to achieve densities better than DRAMs and speeds faster than SRAMs. MRAMs could potentially replace all computer memory RAM technologies in use today, leading to future applications like instan-on computers and longer battery life for pervasive devices. Such rapid development was made possible due to the recent discovery of large magnetoresistance in Spin tunneling junction devices. Spin tunneling junctions (STJ) are composite structures consisting of a thin insulating layer sandwiched between two magnetic layers. This thesis research is targeted towards these spin tunneling junction based Magnetic memories. In any memory, some kind of an interface circuit is needed to read the logic states. In this thesis, four such circuits are proposed and designed for Magnetic memories (MRAM). These circuits interface to the Spin tunneling junctions and act as sense amplifiers to read their magnetic states. The physical structure and functional characteristics of these circuits are discussed in this thesis. Mismatch effects on the circuits and proper design techniques are also presented. To demonstrate the functionality of these interface structures, test circuits were designed and fabricated in TSMC 0.35{micro} CMOS process. Also circuits to characterize the process mismatches were fabricated and tested. These results were then used in Matlab programs to aid in design process and to predict interface circuit's yields.

  9. CMOS Interface Circuits for Spin Tunneling Junction Based Magnetic Random Access Memories

    Energy Technology Data Exchange (ETDEWEB)

    Saripalli, Ganesh [Iowa State Univ., Ames, IA (United States)

    2002-01-01

    Magneto resistive memories (MRAM) are non-volatile memories which use magnetic instead of electrical structures to store data. These memories, apart from being non-volatile, offer a possibility to achieve densities better than DRAMs and speeds faster than SRAMs. MRAMs could potentially replace all computer memory RAM technologies in use today, leading to future applications like instan-on computers and longer battery life for pervasive devices. Such rapid development was made possible due to the recent discovery of large magnetoresistance in Spin tunneling junction devices. Spin tunneling junctions (STJ) are composite structures consisting of a thin insulating layer sandwiched between two magnetic layers. This thesis research is targeted towards these spin tunneling junction based Magnetic memories. In any memory, some kind of an interface circuit is needed to read the logic states. In this thesis, four such circuits are proposed and designed for Magnetic memories (MRAM). These circuits interface to the Spin tunneling junctions and act as sense amplifiers to read their magnetic states. The physical structure and functional characteristics of these circuits are discussed in this thesis. Mismatch effects on the circuits and proper design techniques are also presented. To demonstrate the functionality of these interface structures, test circuits were designed and fabricated in TSMC 0.35μ CMOS process. Also circuits to characterize the process mismatches were fabricated and tested. These results were then used in Matlab programs to aid in design process and to predict interface circuit's yields.

  10. Tetragonal Heusler-Like Mn-Ga Alloys Based Perpendicular Magnetic Tunnel Junctions

    Science.gov (United States)

    Ma, Qinli; Sugihara, Atsushi; Suzuki, Kazuya; Zhang, Xianmin; Miyazaki, Terunobu; Mizukami, Shigemi

    2014-10-01

    Films of the Mn-based tetragonal Heusler-like alloys, such as Mn-Ga, exhibit a large perpendicular magnetic anisotropy (PMA), small damping constant, small saturation magnetization and large spin polarizations. These properties are attractive for the application to the next generation high density spin-transfer-torque (STT) magnetic random access memory (STT-MRAM). We reviewed the structure, magnetic properties and Gilbert damping of the alloy films with large PMA, and the current status of research on tunnel magnetoresistance (TMR) in perpendicular magnetic tunnel junctions (p-MTJs) based on Mn-based tetragonal Heusler-like alloy electrode, and also discuss the issues for the application of those to STT-MRAM.

  11. Magnetic Tunnel Junction-Based On-Chip Microwave Phase and Spectrum Analyzer

    Science.gov (United States)

    Fan, Xin; Chen, Yunpeng; Xie, Yunsong; Kolodzey, James; Wilson, Jeffrey D.; Simons, Rainee N.; Xiao, John Q.

    2014-01-01

    A magnetic tunnel junction (MTJ)-based microwave detector is proposed and investigated. When the MTJ is excited by microwave magnetic fields, the relative angle between the free layer and pinned layer alternates, giving rise to an average resistance change. By measuring the average resistance change, the MTJ can be utilized as a microwave power sensor. Due to the nature of ferromagnetic resonance, the frequency of an incident microwave is directly determined. In addition, by integrating a mixer circuit, the MTJ-based microwave detector can also determine the relative phase between two microwave signals. Thus, the MTJbased microwave detector can be used as an on-chip microwave phase and spectrum analyzer.

  12. Paramagnetic molecule induced strong antiferromagnetic exchange coupling on a magnetic tunnel junction based molecular spintronics device.

    Science.gov (United States)

    Tyagi, Pawan; Baker, Collin; D'Angelo, Christopher

    2015-07-31

    This paper reports our Monte Carlo (MC) studies aiming to explain the experimentally observed paramagnetic molecule induced antiferromagnetic coupling between ferromagnetic (FM) electrodes. Recently developed magnetic tunnel junction based molecular spintronics devices (MTJMSDs) were prepared by chemically bonding the paramagnetic molecules between the FM electrodes along the tunnel junction's perimeter. These MTJMSDs exhibited molecule-induced strong antiferromagnetic coupling. We simulated the 3D atomic model analogous to the MTJMSD and studied the effect of molecule's magnetic couplings with the two FM electrodes. Simulations show that when a molecule established ferromagnetic coupling with one electrode and antiferromagnetic coupling with the other electrode, then theoretical results effectively explained the experimental findings. Our studies suggest that in order to align MTJMSDs' electrodes antiparallel to each other, the exchange coupling strength between a molecule and FM electrodes should be ∼50% of the interatomic exchange coupling for the FM electrodes.

  13. Magnetic Tunnel Junction-Based On-Chip Microwave Phase and Spectrum Analyzer

    Science.gov (United States)

    Fan, Xin; Chen, Yunpeng; Xie, Yunsong; Kolodzey, James; Wilson, Jeffrey D.; Simons, Rainee N.; Xiao, John Q.

    2014-01-01

    A magnetic tunnel junction (MTJ)-based microwave detector is proposed and investigated. When the MTJ is excited by microwave magnetic fields, the relative angle between the free layer and pinned layer alternates, giving rise to an average resistance change. By measuring the average resistance change, the MTJ can be utilized as a microwave power sensor. Due to the nature of ferromagnetic resonance, the frequency of an incident microwave is directly determined. In addition, by integrating a mixer circuit, the MTJ-based microwave detector can also determine the relative phase between two microwave signals. Thus, the MTJ-based microwave detector can be used as an on-chip microwave phase and spectrum analyzer.

  14. Large magnetocapacitance effect in magnetic tunnel junctions based on Debye-Fröhlich model

    Energy Technology Data Exchange (ETDEWEB)

    Kaiju, Hideo, E-mail: kaiju@es.hokudai.ac.jp; Takei, Masashi; Misawa, Takahiro; Nishii, Junji [Research Institute for Electronic Science, Hokkaido University, Sapporo, Hokkaido 001-0020 (Japan); Nagahama, Taro [School of Engineering, Hokkaido University, Sapporo, Hokkaido 060-8628 (Japan); Xiao, Gang [Department of Physics, Brown University, Providence, Rhode Island 02912 (United States)

    2015-09-28

    The frequency dependence of tunneling magnetocapacitance (TMC) in magnetic tunnel junctions (MTJs) is investigated theoretically and experimentally. According to the calculation based on Debye-Fröhlich model combined with Julliere formula, the TMC ratio strongly depends on the frequency and it has the maximum peak at a specific frequency. The calculated frequency dependence of TMC is in good agreement with the experimental results obtained in MgO-based MTJs with a tunneling magnetoresistance (TMR) ratio of 108%, which exhibit a large TMC ratio of 155% at room temperature. This calculation also predicts that the TMC ratio can be as large as about 1000% for a spin polarization of 87%, while the TMR ratio is 623% for the same spin polarization. These theoretical and experimental findings provide a deeper understanding on AC spin-dependent transport in the MTJs and will open up wider opportunities for device applications, such as highly sensitive magnetic sensors and impedance-tunable devices.

  15. Massive Dirac fermion transport in a gapped graphene-based magnetic tunnel junction

    Science.gov (United States)

    Soodchomshom, Bumned; Tang, I.-Ming; Hoonsawat, Rassmidara

    2009-08-01

    The spin transport in a graphene-based magnetic (NG/ferromagnetic barrier (FB)/NG) tunnel junction with the graphene sheet being grown on a SiC substrate is investigated. Zhou et al. [Nat. Mater. 6 (2007) 770] has shown that in these epitaxial grown graphene sheets, the electrons behave like massive relativistic particles with an energy gap of 2 Δ∼260 meV opening up in the energy spectrum of the massive relativistic electron. Basing on assumption that gap in graphene can occur under the influence of the magnetic field, we find that in the case of thick ferromagnetic graphene barriers, the electronic gap causes the barrier to behave as a strong insulator when the gate potential is in the range 400-130 meVswitched from a 100% spin up current to a 100% spin down current by small variation of V G from V G E f , the features of a perfect spin filtering electronic junction.

  16. Magnetic tunnel junctions (MTJs)

    Institute of Scientific and Technical Information of China (English)

    2001-01-01

    We review the giant tunnel magnetoresistance (TMR) in ferromagnetic-insulator-ferromagnetic junctions discovered in recent years, which is the magnetoresistance (MR) associated with the spin-dependent tunneling between two ferromagnetic metal films separated by an insulating thin tunnel barrier. The theoretical and experimental results including junction conductance, magnetoresistance and their temperature and bias dependences are described.

  17. Magnetization distribution and spin transport of graphene/h-BN/graphene nanoribbon-based magnetic tunnel junction

    Science.gov (United States)

    Zhang, Y.; Yan, X. H.; Guo, Y. D.; Xiao, Y.

    2017-09-01

    Motivated by recent electronic transport measurement of boron nitride-graphene hybrid atomic layers, we studied magnetization distribution, transmission and current-bias relation of graphene/h-BN/graphene (C/BN/C) nanoribbon-based magnetic tunnel junctions (MTJ) based on density functional theory and non-equilibrium Green's function methods. Three types of MTJs, i.e. asymmetric, symmetric (S) and symmetric (SS), and two types of lead magnetization alignment, i.e. parallel (PC) and antiparallel (APC), are considered. The results show that the magnetization distribution is closely related to the interface structure. Especially for asymmetric MTJ, the B/N atoms at the C/BN interface are spin-polarized and give finite magnetic moments. More interesting, it is found that the APC transmission of asymmetric MTJ with the thinnest barrier dominates over the PC one. By analyzing the projected density of states, one finds that the unusual higher APC transmission than PC is due to the coupling of electronic states of left ZGNR and right ZGNR. By integrating transmission, we calculate the current-bias voltage relation and find that the APC current is larger than PC current at small bias voltage and therefore reproduces a negative tunnel magnetoresistance. The results reported here will be useful and important for the design of C/BN/C-based MTJ.

  18. Zero-field spin transfer oscillators based on magnetic tunnel junction having perpendicular polarizer and planar free layer

    Science.gov (United States)

    Fang, Bin; Feng, Jiafeng; Gan, Huadong; Malmhall, Roger; Huai, Yiming; Xiong, Rongxin; Wei, Hongxiang; Han, Xiufeng; Zhang, Baoshun; Zeng, Zhongming

    2016-12-01

    We experimentally studied spin-transfer-torque induced magnetization oscillations in an asymmetric MgO-based magnetic tunnel junction device consisting of an in-plane magnetized free layer and an out-of-plane magnetized polarizer. A steady auto-oscillation was achieved at zero magnetic field and room temperature, with an oscillation frequency that was strongly dependent on bias currents, with a large frequency tunability of 1.39 GHz/mA. Our results suggest that this new structure has a high potential for new microwave device designs.

  19. Zero-field spin transfer oscillators based on magnetic tunnel junction having perpendicular polarizer and planar free layer

    Directory of Open Access Journals (Sweden)

    Bin Fang

    2016-12-01

    Full Text Available We experimentally studied spin-transfer-torque induced magnetization oscillations in an asymmetric MgO-based magnetic tunnel junction device consisting of an in-plane magnetized free layer and an out-of-plane magnetized polarizer. A steady auto-oscillation was achieved at zero magnetic field and room temperature, with an oscillation frequency that was strongly dependent on bias currents, with a large frequency tunability of 1.39 GHz/mA. Our results suggest that this new structure has a high potential for new microwave device designs.

  20. Perpendicular magnetic tunnel junction with a strained Mn-based nanolayer

    Science.gov (United States)

    Suzuki, K. Z.; Ranjbar, R.; Okabayashi, J.; Miura, Y.; Sugihara, A.; Tsuchiura, H.; Mizukami, S.

    2016-07-01

    A magnetic tunnel junction with a perpendicular magnetic easy-axis (p-MTJ) is a key device for spintronic non-volatile magnetoresistive random access memory (MRAM). Co-Fe-B alloy-based p-MTJs are being developed, although they have a large magnetisation and medium perpendicular magnetic anisotropy (PMA), which make it difficult to apply them to a future dense MRAM. Here, we demonstrate a p-MTJ with an epitaxially strained MnGa nanolayer grown on a unique CoGa buffer material, which exhibits a large PMA of more than 5 Merg/cm3 and magnetisation below 500 emu/cm3 these properties are sufficient for application to advanced MRAM. Although the experimental tunnel magnetoresistance (TMR) ratio is still low, first principles calculations confirm that the strain-induced crystal lattice distortion modifies the band dispersion along the tetragonal c-axis into the fully spin-polarised state; thus, a huge TMR effect can be generated in this p-MTJ.

  1. Perpendicular magnetic tunnel junction with a strained Mn-based nanolayer.

    Science.gov (United States)

    Suzuki, K Z; Ranjbar, R; Okabayashi, J; Miura, Y; Sugihara, A; Tsuchiura, H; Mizukami, S

    2016-07-26

    A magnetic tunnel junction with a perpendicular magnetic easy-axis (p-MTJ) is a key device for spintronic non-volatile magnetoresistive random access memory (MRAM). Co-Fe-B alloy-based p-MTJs are being developed, although they have a large magnetisation and medium perpendicular magnetic anisotropy (PMA), which make it difficult to apply them to a future dense MRAM. Here, we demonstrate a p-MTJ with an epitaxially strained MnGa nanolayer grown on a unique CoGa buffer material, which exhibits a large PMA of more than 5 Merg/cm(3) and magnetisation below 500 emu/cm(3); these properties are sufficient for application to advanced MRAM. Although the experimental tunnel magnetoresistance (TMR) ratio is still low, first principles calculations confirm that the strain-induced crystal lattice distortion modifies the band dispersion along the tetragonal c-axis into the fully spin-polarised state; thus, a huge TMR effect can be generated in this p-MTJ.

  2. The importance of Fe surface states for spintronic devices based on magnetic tunnel junctions

    Energy Technology Data Exchange (ETDEWEB)

    Chantis, Athanasios N [Los Alamos National Laboratory

    2008-01-01

    In this article we give a review of our recent theoretical studies of the influence of Fe(001) surface (interface) states on spin-polarized electron transport across magnetic tunnel junctions with Fe electrodes. We show that minority-spin surface (interface) states are responsible for at least two effects which are important for spin electronics. First, they can produce a sizable tunneling anisotropic magnetoresistance in magnetic tunnel junctions with a single Fe electrode. The effect is driven by a Rashba shift of the resonant surface band when the magnetization changes direction. This can introduce a new class of spintronic devices, namely, tunneling magnetoresistance junctions with a single ferromagnetic electrode. Second, in Fe/GaAs(001) magnetic tunnel junctions minority-spin interface states produce a strong dependence of the tunneling current spin polarization on applied electrical bias. A dramatic sign reversal within a voltage range of just a few tenths of an eV is predicted. This explains the observed sign reversal of spin polarization in recent experiments of electrical spin injection in Fe/GaAs(001) and related reversal of tunneling magnetoresistance through vertical Fe/GaAs/Fe trilayers.

  3. Magnetic stability under magnetic cycling of MgO-based magnetic tunneling junctions with an exchange-biased synthetic antiferromagnetic pinned layer

    Directory of Open Access Journals (Sweden)

    Qiang Hao

    2016-02-01

    Full Text Available We investigate the magnetic stability and endurance of MgO-based magnetic tunnel junctions (MTJs with an exchange-biased synthetic antiferromagnetic (SAF pinned layer. When a uniaxially cycling switching field is applied along the easy axis of the free magnetic layer, the magnetoresistance varies only by 1.7% logarithmically with the number of cycles, while no such change appears in the case of a rotating field. This observation is consistent with the effect of the formation and motion of domain walls in the free layer, which create significant stray fields within the pinned hard layer. Unlike in previous studies, the decay we observed only occurs during the first few starting cycles (<20, at which point there is no further variance in all performance parameters up to 107 cycles. Exchange-biased SAF structure is ideally suited for solid-state magnetic sensors and magnetic memory devices.

  4. Brief rapid thermal treatment effect on patterned CoFeB-based magnetic tunneling junctions

    Science.gov (United States)

    Wu, Kuo-Ming; Huang, Chao-Hsien; Wang, Yung-Hung; Kao, Ming-Jer; Tsai, Ming-Jinn; Wu, Jong-Ching; Horng, Lance

    2007-05-01

    The brief thermal treatment effects on the magnetoresistance of microstructured Co60Fe20B20-based magnetic tunneling junctions have been studied. The elliptical shape of devices with long/short axis of 4/2μm was patterned out of film stack of seed layer (20)/PtMn(15)/Co60Fe20B20(3)/Al(0.7)oxide/C60Fe20B20(20)/capping layer (48) (thickness unit in nanometers) combining conventional lithography and inductively coupled plasma reactive ion beam etching technologies. The thermal annealing was carried out with device loading into a furnace with preset temperatures ranging from 100to400°C for only 5min in the absence of any external magnetic field. The magnetoresistance was found to increase with increasing annealing temperatures up to 250°C and then decrease at higher annealing temperatures. In addition, the magnetoresistance ratio of around 35%, similar to that of as-fabricated devices, sustains up to annealing temperature of 350°C. This survival of magnetoresistance at higher annealing temperature is due to boron conservation in the amorphous CoFeB ferromagnetic layer at higher annealing temperature for only a short time, which is manifested using x-ray diffractometer technique.

  5. Planar Josephson tunnel junctions in a transverse magnetic field

    DEFF Research Database (Denmark)

    Monacoa, R.; Aarøe, Morten; Mygind, Jesper

    2007-01-01

    Traditionally, since the discovery of the Josephson effect in 1962, the magnetic diffraction pattern of planar Josephson tunnel junctions has been recorded with the field applied in the plane of the junction. Here we discuss the static junction properties in a transverse magnetic field where...... demagnetization effects imposed by the tunnel barrier and electrodes geometry are important. Measurements of the junction critical current versus magnetic field in planar Nb-based high-quality junctions with different geometry, size, and critical current density show that it is advantageous to use a transverse...

  6. Magnetotransport in MgO-based magnetic tunnel junctions grown by molecular beam epitaxy (invited)

    Energy Technology Data Exchange (ETDEWEB)

    Andrieu, S., E-mail: stephane.andrieu@univ-lorraine.fr; Bonell, F.; Hauet, T.; Montaigne, F. [Institut Jean Lamour, Nancy University/CNRS, Bd des Aiguillettes, BP239, 54506 Vandoeuvre-lès-Nancy (France); Calmels, L.; Snoeck, E. [CEMES, CNRS and Toulouse University, 29 rue Jeanne Marvig, 31055 Toulouse (France); Lefevre, P.; Bertran, F. [Synchrotron SOLEIL-CNRS, L' Orme des Merisiers, Saint-Aubin, BP48, 91192 Gif-sur-Yvette cedex (France)

    2014-05-07

    The strong impact of molecular beam epitaxy growth and Synchrotron Radiation characterization tools in the understanding of fundamental issues in nanomagnetism and spintronics is illustrated through the example of fully epitaxial MgO-based Magnetic Tunnel Junctions (MTJs). If ab initio calculations predict very high tunnel magnetoresistance (TMR) in such devices, some discrepancy between theory and experiments still exists. The influence of imperfections in real systems has thus to be considered like surface contaminations, structural defects, unexpected electronic states, etc. The influence of possible oxygen contamination at the Fe/MgO(001) interface is thus studied, and is shown to be not so detrimental to TMR as predicted by ab initio calculations. On the contrary, the decrease of dislocations density in the MgO barrier of MTJs using Fe{sub 1−x}V{sub x} electrodes is shown to significantly increase TMR. Finally, unexpected transport properties in Fe{sub 1−X}Co{sub x}/MgO/Fe{sub 1−X}Co{sub x} (001) are presented. With the help of spin and symmetry resolved photoemission and ab initio calculation, the TMR decrease for Co content higher than 25% is shown to come from the existence of an interface state and the shift of the empty Δ1 minority spin state towards the Fermi level.

  7. Comprehensive and Macrospin-Based Magnetic Tunnel Junction Spin Torque Oscillator Model - Part I: Analytical Model of the MTJ STO

    OpenAIRE

    Chen, Tingsu; Eklund, Anders; Iacocca, Ezio; Rodriguez, Saul; Malm, Gunnar; Åkerman, Johan; Rusu, Ana

    2014-01-01

    Magnetic tunnel junction (MTJ) spin torque oscillators (STO) have shown the potential to be used in a wide range of microwave and sensing applications. To evaluate potential uses of MTJ STO technology in various applications, an analytical model that can capture MTJ STO's characteristics, while enabling system- and circuit-level designs, is of great importance. An analytical model based on macrospin approximation is necessary for these designs since it allows implementation in hardware descri...

  8. Novel handheld magnetometer probe based on magnetic tunnelling junction sensors for intraoperative sentinel lymph node identification.

    Science.gov (United States)

    Cousins, A; Balalis, G L; Thompson, S K; Forero Morales, D; Mohtar, A; Wedding, A B; Thierry, B

    2015-06-03

    Using magnetic tunnelling junction sensors, a novel magnetometer probe for the identification of the sentinel lymph node using magnetic tracers was developed. Probe performance was characterised in vitro and validated in a preclinical swine model. Compared to conventional gamma probes, the magnetometer probe showed excellent spatial resolution of 4.0 mm, and the potential to detect as few as 5 μg of magnetic tracer. Due to the high sensitivity of the magnetometer, all first-tier nodes were identified in the preclinical experiments, and there were no instances of false positive or false negative detection. Furthermore, these preliminary data encourage the application of the magnetometer probe for use in more complex lymphatic environments, such as in gastrointestinal cancers, where the sentinel node is often in close proximity to other non-sentinel nodes, and high spatial resolution detection is required.

  9. High tunneling magnetoresistance ratio in perpendicular magnetic tunnel junctions using Fe-based Heusler alloys

    Science.gov (United States)

    Wang, Yu-Pu; Lim, Sze-Ter; Han, Gu-Chang; Teo, Kie-Leong

    2015-12-01

    Heulser alloys Fe2Cr1-xCoxSi (FCCS) with different Co compositions x have been predicted to have high spin polarization. High perpendicular magnetic anisotropy (PMA) has been observed in ultra-thin FCCS films with magnetic anisotropy energy density up to 2.3 × 106 erg/cm3. The perpendicular magnetic tunnel junctions (p-MTJs) using FCCS films with different Co compositions x as the bottom electrode have been fabricated and the post-annealing effects have been investigated in details. An attractive tunneling magnetoresistance ratio as high as 51.3% is achieved for p-MTJs using Fe2CrSi (FCS) as the bottom electrode. The thermal stability Δ can be as high as 70 for 40 nm dimension devices using FCS, which is high enough to endure a retention time of over 10 years. Therefore, Heusler alloy FCS is a promising PMA candidate for p-MTJ application.

  10. Preparation and characterization of bottom ferromagnetic electrode for graphene based magnetic junction

    Energy Technology Data Exchange (ETDEWEB)

    Cheng, Shufan, E-mail: Shu.Cheng@nrl.navy.mil; Cobas, Enrique, E-mail: Enrique.Cobas@nrl.navy.mil; Erve, Olaf M.J. van ' t, E-mail: Olaf.vantErve@nrl.navy.mil; Jonker, Berend T., E-mail: Berry.Jonker@nrl.navy.mil

    2016-03-01

    Magnetic multilayer stacks incorporating several layers of graphene have been predicted to produce very high magnetoresistance and high conductivity, a combination of properties that would be useful in magnetic sensors and future spin-based data storage and processing technologies such as MRAM. To realize the theoretically modeled heterostructures and probe their properties, a clean, high-quality graphene-ferromagnet interface, such as one that results from CVD of graphene directly on ferromagnetic films, is required. However, past works using Ni and Co films for CVD of graphene employ the ferromagnetic film as a sacrificial layer to be dissolved after graphene growth and ignore changes to its morphology and magnetic properties. Here we investigated the effect of graphene CVD growth conditions on the properties of Co, Ni, Co{sub 90}Fe{sub 10} and Ni{sub 80}Fe{sub 20} ferromagnetic films. The magnetic films were grown by dc magnetron sputtering with different growth conditions onto c-Al{sub 2}O{sub 3}, Si/AlN and MgO substrates. The crystalline orientation, surface morphology/roughness and magnetic properties of the films were measured using X-ray diffraction, atomic force microscopy and vibrating sample magnetometry, respectively. Cobalt films grown at 500 °C were found to be hcp and heteroepitaxial on c-Al{sub 2}O{sub 3}. CoFe, Ni, and NiFe films on c-Al{sub 2}O{sub 3} were found to be fcc and to be (111) textured but with grains having in-plane rotation differing by 60°. The CoFe and NiFe films on c-Al{sub 2}O{sub 3} retained their small coercivity and high remanence while the pure Co and Ni films exhibited much smaller remanence after graphene growth, making them unsuitable for magnetic memory technologies. Films on Si/AlN were found to have the same rotational domains as those on sapphire c-Al{sub 2}O{sub 3}. The NiFe films on (111) MgO were found to be mostly single domain. - Highlights: • The NiFe films on c-Al{sub 2}O{sub 3,} Si/c-AlN and (111)MgO were

  11. Long Range Magnetic Interaction between Josephson Junctions

    DEFF Research Database (Denmark)

    Grønbech-Jensen, Niels; Samuelsen, Mogens Rugholm

    1995-01-01

    A new model for magnetic coupling between long Josephson junctions is proposed. The coupling mechanism is a result of the magnetic fields outside the junctions and is consequently effective over long distances between junctions. We give specific expressions for the form and magnitude of the inter...

  12. A Novel Design and Fabrication of Magnetic Random Access Memory Based on Nano-ring-type Magnetic Tunnel Junctions

    Institute of Scientific and Technical Information of China (English)

    X.F.Han; M. Ma; Y. Wang; Z.C. Wen; D.P. Liu; W.S.Zhan; H.X. Wei; Z.L.Peng; H.D. Yang; J.F. Feng; G.X.Du; Z.B.Sun; L.X. Jiang; Q.H. Qin

    2007-01-01

    Nano-ring-type magnetic tunnel junctions (NR-MTJs) with the layer structure of Ta(5)/Ir22Mn78(10)/Co75Fe25(2)/Ru(0.75)/Co60Fe20B20(3)/Al(0.6)-oxide/Co60Fe20B20(2.5)/Ta(3)/Ru(5) (thickness unit: nm)were nano-fabricated on the Si(100)/SiO2 substrate using magnetron sputtering deposition combined with the optical lithography, electron beam lithography (EBL) and Ar ion-beam etching techniques. The smaller NR-MTJs with the inner- and outer-diameter of around 50 and 100 nm and also their corresponding NR-MTJ arrays were nano-patterned. The tunnelling magnetoresistance (TMR & R) versus driving current (I) loops for a spin-polarized current switching were measured, and the TMR ratio of around 35% at room temperature were observed. The critical values of switching current for the free Co60Fe20B20 layer relative to the reference Co60Fe20B20 layer between parallel and anti-parallel magnetization states were between 0.50 and 0.75 mA in such NR-MTJs. It is suggested that the applicable MRAM fabrication with the density and capacity higher than 256 Mbit/inch2 even 6 Gbite/inch2 are possible using both 1 NR-MTJ+1 transistor structure and current switching mechanism based on based on our fabricated 4×4 MRAM demo devices.

  13. Spin Transfer Torque Switching and Perpendicular Magnetic Anisotropy in Full Heusler Alloy Co2FeAl-BASED Tunnel Junctions

    Science.gov (United States)

    Sukegawa, H.; Wen, Z. C.; Kasai, S.; Inomata, K.; Mitani, S.

    2014-12-01

    Some of Co-based full Heusler alloys have remarkable properties in spintronics, that is, high spin polarization of conduction electrons and low magnetic damping. Owing to these properties, magnetic tunnel junctions (MTJs) using Co-based full Heusler alloys are potentially of particular importance for spintronic application such as magnetoresistive random access memories (MRAMs). Recently, we have first demonstrated spin transfer torque (STT) switching and perpendicular magnetic anisotropy (PMA), which are required for developing high-density MRAMs, in full-Heusler Co2FeAl alloy-based MTJs. In this review, the main results of the experimental demonstrations are shown with referring to related issues, and the prospect of MTJs using Heusler alloys is also discussed.

  14. LETTER TO THE EDITOR: A CrO2-based magnetic tunnel junction

    Science.gov (United States)

    Barry, A.; Coey, J. M. D.; Viret, M.

    2000-02-01

    A tunnel junction based on the half-metallic oxide CrO2 uses a native oxide barrier layer and a cobalt top electrode. The I :V characteristic is fitted to the Simmons model with icons/Journals/Common/phi" ALT="phi" ALIGN="TOP"/> = 0.76 eV and t = 2.0 nm. The magnetoresistance is positive with icons/Journals/Common/Delta" ALT="Delta" ALIGN="TOP"/> R /R = 1.0% at 77 K.

  15. Magnetic interaction between spatially extended superconducting tunnel junctions

    DEFF Research Database (Denmark)

    Grønbech-Jensen, Niels; Samuelsen, Mogens Rugholm

    2002-01-01

    A general description of magnetic interactions between superconducting tunnel junctions is given. The description covers a wide range of possible experimental systems, and we explicitly explore two experimentally relevant limits of coupled junctions. One is the limit of junctions with tunneling...... been considered through arrays of superconducting weak links based on semiconductor quantum wells with superconducting electrodes. We use the model to make direct interpretations of the published experiments and thereby propose that long-range magnetic interactions are responsible for the reported...

  16. Temperature and bias voltage dependence of Co/Pd multilayer-based magnetic tunnel junctions with perpendicular magnetic anisotropy

    Energy Technology Data Exchange (ETDEWEB)

    Kugler, Zoe, E-mail: zkugler@physik.uni-bielefeld.d [Bielefeld University, Department of Physics, Universitaetsstr. 25, 33615 Bielefeld (Germany); Drewello, Volker; Schaefers, Markus; Schmalhorst, Jan; Reiss, Guenter; Thomas, Andy [Bielefeld University, Department of Physics, Universitaetsstr. 25, 33615 Bielefeld (Germany)

    2011-01-15

    Temperature- and bias voltage-dependent transport measurements of magnetic tunnel junctions (MTJs) with perpendicularly magnetized Co/Pd electrodes are presented. Magnetization measurements of the Co/Pd multilayers are performed to characterize the electrodes. The effects of the Co layer thickness in the Co/Pd bilayers, the annealing temperature, the Co thickness at the MgO barrier interface, and the number of bilayers on the tunneling magneto resistance (TMR) effect are investigated. TMR-ratios of about 11% at room temperature and 18.5% at 13 K are measured and two well-defined switching fields are observed. The results are compared to measurements of MTJs with Co-Fe-B electrodes and in-plane anisotropy.

  17. Polarity-tunable magnetic tunnel junctions based on ferromagnetism at oxide heterointerfaces

    Science.gov (United States)

    Ngo, Thach D. N.; Chang, Jung-Won; Lee, Kyujoon; Han, Seungju; Lee, Joon Sung; Kim, Young Heon; Jung, Myung-Hwa; Doh, Yong-Joo; Choi, Mahn-Soo; Song, Jonghyun; Kim, Jinhee

    2015-08-01

    Complex oxide systems have attracted considerable attention because of their fascinating properties, including the magnetic ordering at the conducting interface between two band insulators, such as LaAlO3 and SrTiO3. However, the manipulation of the spin degree of freedom at the LaAlO3/SrTiO3 heterointerface has remained elusive. Here, we have fabricated hybrid magnetic tunnel junctions consisting of Co and LaAlO3/SrTiO3 ferromagnets with the insertion of a Ti layer in between, which clearly exhibit magnetic switching and the tunnelling magnetoresistance effect below 10 K. The magnitude and sign of the tunnelling magnetoresistance are strongly dependent on the direction of the rotational magnetic field parallel to the LaAlO3/SrTiO3 plane, which is attributed to a strong Rashba-type spin-orbit coupling in the LaAlO3/SrTiO3 heterostructure. Our study provides a further support for the existence of the macroscopic ferromagnetism at LaAlO3/SrTiO3 heterointerfaces and opens a novel route to realize interfacial spintronics devices.

  18. High tunneling magnetoresistance ratio in perpendicular magnetic tunnel junctions using Fe-based Heusler alloys

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Yu-Pu, E-mail: Vicky-sg1015@hotmail.com [Department of Electrical and Computer Engineering, National University of Singapore (Singapore); Data Storage Institute, Agency for Science, Technology and Research - A*STAR (Singapore); Lim, Sze-Ter; Han, Gu-Chang, E-mail: HAN-Guchang@dsi.a-star.edu.sg [Data Storage Institute, Agency for Science, Technology and Research - A*STAR (Singapore); Teo, Kie-Leong, E-mail: eleteokl@nus.edu.sg [Department of Electrical and Computer Engineering, National University of Singapore (Singapore)

    2015-12-21

    Heulser alloys Fe{sub 2}Cr{sub 1−x}Co{sub x}Si (FCCS) with different Co compositions x have been predicted to have high spin polarization. High perpendicular magnetic anisotropy (PMA) has been observed in ultra-thin FCCS films with magnetic anisotropy energy density up to 2.3 × 10{sup 6 }erg/cm{sup 3}. The perpendicular magnetic tunnel junctions (p-MTJs) using FCCS films with different Co compositions x as the bottom electrode have been fabricated and the post-annealing effects have been investigated in details. An attractive tunneling magnetoresistance ratio as high as 51.3% is achieved for p-MTJs using Fe{sub 2}CrSi (FCS) as the bottom electrode. The thermal stability Δ can be as high as 70 for 40 nm dimension devices using FCS, which is high enough to endure a retention time of over 10 years. Therefore, Heusler alloy FCS is a promising PMA candidate for p-MTJ application.

  19. Simulation Study on Understanding the Spin Transport in MgO Adsorbed Graphene Based Magnetic Tunnel Junction

    Science.gov (United States)

    Raturi, Ashish; Choudhary, Sudhanshu

    2016-11-01

    First principles calculations of spin-dependent electronic transport properties of magnetic tunnel junction (MTJ) consisting of MgO adsorbed graphene nanosheet sandwiched between two CrO2 half-metallic ferromagnetic (HMF) electrodes is reported. MgO adsorption on graphene opens bandgap in graphene nanosheet which makes it more suitable for use as a tunnel barrier in MTJs. It was found that MgO adsorption suppresses transmission probabilities for spin-down channel in case of parallel configuration (PC) and also suppresses transmission in antiparallel configuration (APC) for both spin-up and spin-down channel. Tunnel magneto-resistance (TMR) of 100% is obtained at all bias voltages in MgO adsorbed graphene-based MTJ which is higher than that reported in pristine graphene-based MTJ. HMF electrodes were found suitable to achieve perfect spin filtration effect and high TMR. I-V characteristics for both parallel and antiparallel magnetization states of junction are calculated. High TMR suggests its usefulness in spin valves and other spintronics-based applications.

  20. Symmetry dependent spin injection from Fe/MgO in single crystal based magnetic tunnel junctions

    Energy Technology Data Exchange (ETDEWEB)

    Hehn, Michel; Greullet, Fanny; Bernos, Julien; Tiusan, Coriolan; Bellouard, Christine; Montaigne, Francois; Lacour, Daniel; Alnot, Marc; Lu, Yuan; Lengaigne, Gwladys [LPM, Vandoeuvre les Nancy (France); Halley, David; Weber, Wolfgang [IPCMS, 67 - Strasbourg (France)

    2009-07-01

    The transport in crystalline magnetic tunnel junctions (MTJ) attracted the interest of the international community after the theoretical predictions of Butler et al of giant tunnel magnetoresistance (TMR) effects. In these model systems the electrons are classified with respect to the symmetry of their associated electronic Bloch wave function. The large predicted TMR ratio is related to a symmetry dependent attenuation rate within the MgO single crystal barrier combined with a half metallic property of a specific symmetry in the Fe electrode. After a brief introduction to the physics of the transport in Fe/MgO/Fe MTJ, I show how to exploit the symmetry dependence of the tunnel conductivity to engineer novel MTJs functionalities. We demonstrate that, a suitably chosen Cr(001) epitaxial metallic spacer layer quenches the transmission of particular electronic states, therefore acting as an additional symmetry dependent tunnel barrier for electrons at the Fermi level. Moreover, we show that this ultrathin Cr metallic barrier can promote quantum well states in an adjacent Fe layer. These results confirm the transport mechanism proposed by Butler et al. Extension to other materials are also discussed.

  1. MnGa-based fully perpendicular magnetic tunnel junctions with ultrathin Co2MnSi interlayers

    Science.gov (United States)

    Mao, Siwei; Lu, Jun; Zhao, Xupeng; Wang, Xiaolei; Wei, Dahai; Liu, Jian; Xia, Jianbai; Zhao, Jianhua

    2017-01-01

    Because tetragonal structured MnGa alloy has intrinsic (not interface induced) giant perpendicular magnetic anisotropy (PMA), ultra-low damping constant and high spin polarization, it is predicted to be a kind of suitable magnetic electrode candidate in the perpendicular magnetic tunnel junction (p-MTJ) for high density spin transfer torque magnetic random access memory (STT-MRAM) applications. However, p-MTJs with both bottom and top MnGa electrodes have not been achieved yet, since high quality perpendicular magnetic MnGa films can hardly be obtained on the MgO barrier due to large lattice mismatch and surface energy difference between them. Here, a MnGa-based fully p-MTJ with the structure of MnGa/Co2MnSi/MgO/Co2MnSi/MnGa is investigated. As a result, the multilayer is with high crystalline quality, and both the top and bottom MnGa electrodes show well PMA. Meanwhile, a distinct tunneling magnetoresistance (TMR) ratio of 65% at 10 K is achieved. Ultrathin Co2MnSi films are used to optimize the interface quality between MnGa and MgO barrier. A strong antiferromagnetic coupling in MnGa/Co2MnSi bilayer is confirmed with the interfacial exchange coupling constant of −5erg/cm2. This work proposes a novel p-MTJ structure for the future STT-MRAM progress. PMID:28233780

  2. MnGa-based fully perpendicular magnetic tunnel junctions with ultrathin Co2MnSi interlayers.

    Science.gov (United States)

    Mao, Siwei; Lu, Jun; Zhao, Xupeng; Wang, Xiaolei; Wei, Dahai; Liu, Jian; Xia, Jianbai; Zhao, Jianhua

    2017-02-24

    Because tetragonal structured MnGa alloy has intrinsic (not interface induced) giant perpendicular magnetic anisotropy (PMA), ultra-low damping constant and high spin polarization, it is predicted to be a kind of suitable magnetic electrode candidate in the perpendicular magnetic tunnel junction (p-MTJ) for high density spin transfer torque magnetic random access memory (STT-MRAM) applications. However, p-MTJs with both bottom and top MnGa electrodes have not been achieved yet, since high quality perpendicular magnetic MnGa films can hardly be obtained on the MgO barrier due to large lattice mismatch and surface energy difference between them. Here, a MnGa-based fully p-MTJ with the structure of MnGa/Co2MnSi/MgO/Co2MnSi/MnGa is investigated. As a result, the multilayer is with high crystalline quality, and both the top and bottom MnGa electrodes show well PMA. Meanwhile, a distinct tunneling magnetoresistance (TMR) ratio of 65% at 10 K is achieved. Ultrathin Co2MnSi films are used to optimize the interface quality between MnGa and MgO barrier. A strong antiferromagnetic coupling in MnGa/Co2MnSi bilayer is confirmed with the interfacial exchange coupling constant of -5erg/cm(2). This work proposes a novel p-MTJ structure for the future STT-MRAM progress.

  3. MnGa-based fully perpendicular magnetic tunnel junctions with ultrathin Co2MnSi interlayers

    Science.gov (United States)

    Mao, Siwei; Lu, Jun; Zhao, Xupeng; Wang, Xiaolei; Wei, Dahai; Liu, Jian; Xia, Jianbai; Zhao, Jianhua

    2017-02-01

    Because tetragonal structured MnGa alloy has intrinsic (not interface induced) giant perpendicular magnetic anisotropy (PMA), ultra-low damping constant and high spin polarization, it is predicted to be a kind of suitable magnetic electrode candidate in the perpendicular magnetic tunnel junction (p-MTJ) for high density spin transfer torque magnetic random access memory (STT-MRAM) applications. However, p-MTJs with both bottom and top MnGa electrodes have not been achieved yet, since high quality perpendicular magnetic MnGa films can hardly be obtained on the MgO barrier due to large lattice mismatch and surface energy difference between them. Here, a MnGa-based fully p-MTJ with the structure of MnGa/Co2MnSi/MgO/Co2MnSi/MnGa is investigated. As a result, the multilayer is with high crystalline quality, and both the top and bottom MnGa electrodes show well PMA. Meanwhile, a distinct tunneling magnetoresistance (TMR) ratio of 65% at 10 K is achieved. Ultrathin Co2MnSi films are used to optimize the interface quality between MnGa and MgO barrier. A strong antiferromagnetic coupling in MnGa/Co2MnSi bilayer is confirmed with the interfacial exchange coupling constant of -5erg/cm2. This work proposes a novel p-MTJ structure for the future STT-MRAM progress.

  4. Sub-nanometer atomic layer deposition for spintronics in magnetic tunnel junctions based on graphene spin-filtering membranes.

    Science.gov (United States)

    Martin, Marie-Blandine; Dlubak, Bruno; Weatherup, Robert S; Yang, Heejun; Deranlot, Cyrile; Bouzehouane, Karim; Petroff, Frédéric; Anane, Abdelmadjid; Hofmann, Stephan; Robertson, John; Fert, Albert; Seneor, Pierre

    2014-08-26

    We report on the successful integration of low-cost, conformal, and versatile atomic layer deposited (ALD) dielectric in Ni–Al2O3–Co magnetic tunnel junctions (MTJs) where the Ni is coated with a spin-filtering graphene membrane. The ALD tunnel barriers, as thin as 0.6 nm, are grown layer-by-layer in a simple, low-vacuum, ozone-based process, which yields high-quality electron-transport barriers as revealed by tunneling characterization. Even under these relaxed conditions, including air exposure of the interfaces, a significant tunnel magnetoresistance is measured highlighting the robustness of the process. The spin-filtering effect of graphene is enhanced, leading to an almost fully inversed spin polarization for the Ni electrode of −42%. This unlocks the potential of ALD for spintronics with conformal, layer-by-layer control of tunnel barriers in magnetic tunnel junctions toward low-cost fabrication and down-scaling of tunnel resistances.

  5. Josephson tunnel junctions in a magnetic field gradient

    DEFF Research Database (Denmark)

    Monaco, R.; Mygind, Jesper; Koshelets, V.P.

    2011-01-01

    We measured the magnetic field dependence of the critical current of high-quality Nb-based planar Josephson tunnel junctions in the presence of a controllable nonuniform field distribution. We found skewed and slowly changing magnetic diffraction patterns quite dissimilar from the Fraunhofer-like...... be suppressed by an asymmetric magnetic field profile. © 2011 American Institute of Physics....

  6. Micromagnetic modeling of critical current oscillations in magnetic Josephson junctions

    Science.gov (United States)

    Golovchanskiy, I. A.; Bol'ginov, V. V.; Stolyarov, V. S.; Abramov, N. N.; Ben Hamida, A.; Emelyanova, O. V.; Stolyarov, B. S.; Kupriyanov, M. Yu.; Golubov, A. A.; Ryazanov, V. V.

    2016-12-01

    In this work we propose and explore an effective numerical approach for investigation of critical current dependence on applied magnetic field for magnetic Josephson junctions with in-plane magnetization orientation. This approach is based on micromagnetic simulation of the magnetization reversal process in the ferromagnetic layer with introduced internal magnetic stiffness and subsequent reconstruction of the critical current value using total flux or reconstructed actual phase difference distribution. The approach is flexible and shows good agreement with experimental data obtained on Josephson junctions with ferromagnetic barriers. Based on this approach we have obtained a critical current dependence on applied magnetic field for rectangular magnetic Josephson junctions with high size aspect ratio. We have shown that the rectangular magnetic Josephson junctions can be considered for application as an effective Josephson magnetic memory element with the value of critical current defined by the orientation of magnetic moment at zero magnetic field. An impact of shape magnetic anisotropy on critical current is revealed and discussed. Finally, we have considered a curling magnetic state in the ferromagnetic layer and demonstrated its impact on critical current.

  7. Thermally induced perpendicular magnetic anisotropy in CoFeB/MgO/CoFeB based magnetic tunnel junction

    Science.gov (United States)

    Kulkarni, Prabhanjan D.; Khan, Jakeer; Predeep, P.; Chowdhury, P.

    2016-05-01

    Thin films of CoFeB/MgO/CoFeB based MTJ structure were deposited using UHV magnetron sputtering system and post annealing treatment in the temperature range from 100 to 400 °C has been carried out to understand their magnetic anisotropic properties. Though the as-deposited stack possesses in-plane magnetic anisotropy, the changeover to perpendicular magnetic anisotropy happens at temperature above 200 °C. The PMA is maximum (4.5 x 106 erg/cm3) when annealed at 300°C and the stack retains PMA till 350 °C, which is necessary in CMOS technology. The stack regains in-plane magnetic anisotropy at higher annealing temperatures due to intermixing at interfaces.

  8. Preparation and characterization of bottom ferromagnetic electrode for graphene based magnetic junction

    Science.gov (United States)

    Cheng, Shufan; Cobas, Enrique; van't Erve, Olaf M. J.; Jonker, Berend T.

    2016-03-01

    Magnetic multilayer stacks incorporating several layers of graphene have been predicted to produce very high magnetoresistance and high conductivity, a combination of properties that would be useful in magnetic sensors and future spin-based data storage and processing technologies such as MRAM. To realize the theoretically modeled heterostructures and probe their properties, a clean, high-quality graphene-ferromagnet interface, such as one that results from CVD of graphene directly on ferromagnetic films, is required. However, past works using Ni and Co films for CVD of graphene employ the ferromagnetic film as a sacrificial layer to be dissolved after graphene growth and ignore changes to its morphology and magnetic properties. Here we investigated the effect of graphene CVD growth conditions on the properties of Co, Ni, Co90Fe10 and Ni80Fe20 ferromagnetic films. The magnetic films were grown by dc magnetron sputtering with different growth conditions onto c-Al2O3, Si/AlN and MgO substrates. The crystalline orientation, surface morphology/roughness and magnetic properties of the films were measured using X-ray diffraction, atomic force microscopy and vibrating sample magnetometry, respectively. Cobalt films grown at 500 °C were found to be hcp and heteroepitaxial on c-Al2O3. CoFe, Ni, and NiFe films on c-Al2O3 were found to be fcc and to be (111) textured but with grains having in-plane rotation differing by 60°. The CoFe and NiFe films on c-Al2O3 retained their small coercivity and high remanence while the pure Co and Ni films exhibited much smaller remanence after graphene growth, making them unsuitable for magnetic memory technologies. Films on Si/AlN were found to have the same rotational domains as those on sapphire c-Al2O3. The NiFe films on (111) MgO were found to be mostly single domain.

  9. Tunable Magnetic Proximity Effects in Graphene Junctions

    Science.gov (United States)

    Lazic, Predrag; Belashchenko, Kirill; Zutic, Igor

    2015-03-01

    The characteristic length of the magnetic proximity effects exceed the thickness of a graphene layer leading to an important, but typically overlooked, modifications of equilibrium and transport properties, as well as the implications for graphene spintronics. Using the first-principles studies that integrate a real space density functional theory (GPAW) with the state-of-the art boundary elements electrostatic code based on the Robin Hood method, we explore tunable electronic structure and magnetic proximity effects in the ferromagnet/insulator/graphene junctions. We show that the inclusion of a finite-size gate electrodes and van der Walls interaction lead to nontrivial effects that could also be important in other two-dimensional materials beyond graphene. Work supported by US ONR, NSF-DMR and Nebraska NSF MRSEC.

  10. Comprehensive and Macrospin-Based Magnetic Tunnel Junction Spin Torque Oscillator Model- Part II: Verilog-A Model Implementation

    Science.gov (United States)

    Chen, Tingsu; Eklund, Anders; Iacocca, Ezio; Rodriguez, Saul; Malm, B. Gunnar; Akerman, Johan; Rusu, Ana

    2015-03-01

    The rapid development of the magnetic tunnel junction (MTJ) spin torque oscillator (STO) technology demands an analytical model to enable building MTJ STO-based circuits and systems so as to evaluate and utilize MTJ STOs in various applications. In Part I of this paper, an analytical model based on the macrospin approximation, has been introduced and verified by comparing it with the measurements of three different MTJ STOs. In Part II, the full Verilog-A implementation of the proposed model is presented. To achieve a reliable model, an approach to reproduce the phase noise generated by the MTJ STO has been proposed and successfully employed. The implemented model yields a time domain signal, which retains the characteristics of operating frequency, linewidth, oscillation amplitude and DC operating point, with respect to the magnetic field and applied DC current. The Verilog-A implementation is verified against the analytical model, providing equivalent device characteristics for the full range of biasing conditions. Furthermore, a system that includes an MTJ STO and CMOS RF circuits is simulated to validate the proposed model for system- and circuit-level designs. The simulation results demonstrate that the proposed model opens the possibility to explore STO technology in a wide range of applications.

  11. Epitaxial wurtzite-MgZnO barrier based magnetic tunnel junctions deposited on a metallic ferromagnetic electrode

    Energy Technology Data Exchange (ETDEWEB)

    Belmoubarik, M., E-mail: bmm-dhr@ecei.tohoku.ac.jp; Al-Mahdawi, M.; Sato, H.; Nozaki, T.; Sahashi, M. [Department of Electronic Engineering, Tohoku University, Sendai 890-8579 (Japan)

    2015-06-22

    An epitaxial wurtzite (WZ) Mg{sub 0.23}Zn{sub 0.77}O barrier based magnetic tunnel junction (MTJ), with electrode-barrier structure of Co{sub 0.30}Pt{sub 0.70} (111)/Mg{sub 0.23}Zn{sub 0.77}O (0001)/Co (0001), was fabricated. The good crystallinity and tunneling properties were experimentally confirmed. Electrical and magnetic investigations demonstrated its high resistance-area product of 1.05 MΩ μm{sup 2}, a maximum tunneling magneto-resistance (TMR) of 35.5%, and the existence of localized states within the tunneling barrier producing TMR rapid decrease and oscillation when increasing the applied bias voltage. The TMR value almost vanished at 200 K, which was attributed to the induced moment and strong spin-orbit coupling in Pt atoms at the Co{sub 0.30}Pt{sub 0.70}/Mg{sub 0.23}Zn{sub 0.77}O interface. Owing to the ferroelectric behavior in WZ-MgZnO materials, the fabrication of WZ-MgZnO barrier based MTJs deposited on a metallic ferromagnetic electrode will open routes for electrically controllable non-volatile devices that are compatible with CMOS technology.

  12. Modulations of interlayer exchange coupling through ultrathin MgO-based magnetic tunnel junctions: First-principles study

    Science.gov (United States)

    Wang, Shizhuo; Xia, Ke; Min, Tai; Ke, Youqi

    2017-07-01

    Ultrathin MgO-based magnetic tunnel junction (MTJ) features high electron/heat current density, presenting important applications in spintronics. Here, we report a first-principles study of the interlayer exchange coupling (IEC) through ultrathin MgO-based MTJs. We investigate the effects of different modulations on the IEC, including temperature, different interfacial disorders, and the type and thickness of the ferromagnetic (FM) materials. It is found that the interfacial disorders, such as oxygen vacancies, boron and carbon impurities, can significantly influence the magnitude and sign of the IEC. The presence of interfacial disorders enhances the anti-FM coupling contribution and reduces the FM coupling contribution to the total IEC, and can thus change the total IEC from FM to Anti-FM in the ultrathin MTJ. We also find that FM materials have important effects on IEC: the IEC with CoFe alloy exhibits much weaker dependence on the interfacial disorders and temperature than that with the Fe. Our first-principles results provide a good explanation for the serious inconsistency between previous experimental measurements. Moreover, by studying the junction structure Vacuum/FM1/MgO/FM2 (FM1, FM2=Fe, CoFe), we find that the ultrathin FM1 layers can dramatically enhance the FM IEC and the IEC enhancement significantly depends on the combination of FM1-FM2. We show that the enhanced FM IEC with ultrathin FM1 can be sustained with a considerable amount of surface roughness in FM1 and interfacial disorder.

  13. Bias dependence of spin transfer torque in Co2MnSi Heusler alloy based magnetic tunnel junctions

    Science.gov (United States)

    Zhang, Jie; Phung, Timothy; Pushp, Aakash; Ferrante, Yari; Jeong, Jaewoo; Rettner, Charles; Hughes, Brian P.; Yang, See-Hun; Jiang, Yong; Parkin, Stuart S. P.

    2017-04-01

    Heusler compounds are of interest as electrode materials for use in magnetic tunnel junctions (MTJs) due to their half metallic character, which leads to 100% spin polarization and high tunneling magnetoresistance. Most work to date has focused on the improvements to tunneling magnetoresistance that can stem from the use of Heusler electrodes, while there is much less work investigating the influence of Heusler electrodes on the spin transfer torque properties of MTJs. Here, we investigate the bias dependence of the anti-damping like and field-like spin transfer torque components in both symmetric (Co2MnSi/MgO/Co2MnSi) and asymmetric (Co2MnSi/MgO/CoFe) structure Heusler based MTJs using spin transfer torque ferromagnetic resonance. We find that while the damping like torque is linear with respect to bias for both MTJ structures, the asymmetric MTJ structure has an additional linear component to the ordinarily quadratic field like torque bias dependence and that these results can be accounted for by a free electron tunneling model. Furthermore, our results suggest that the low damping and low saturation magnetization properties of Heusler alloys are more likely to lead significant improvements to spin torque switching efficiency rather than their half metallic character.

  14. Annealing free magnetic tunnel junction sensors

    Science.gov (United States)

    Knudde, S.; Leitao, D. C.; Cardoso, S.; Freitas, P. P.

    2017-04-01

    Annealing is a major step in the fabrication of magnetic tunnel junctions (MTJs). It sets the exchange bias between the pinned and antiferromagnetic layers, and helps to increase the tunnel magnetoresistance (TMR) in both amorphous and crystalline junctions. Recent research on MTJs has focused on MgO-based structures due to their high TMR. However, the strict process control and mandatory annealing step can limit the scope of the application of these structures as sensors. In this paper, we present AlOx-based MTJs that are produced by ion beam sputtering and remote plasma oxidation and show optimum transport properties with no annealing. The microfabricated devices show TMR values of up to 35% and using NiFe/CoFeB free layers provides tunable linear ranges, leading to coercivity-free linear responses with sensitivities of up to 5.5%/mT. The top-pinned synthetic antiferromagnetic reference shows a stability of about 30 mT in the microfabricated devices. Sensors with linear ranges of up to 60 mT are demonstrated. This paves the way for the integration of MTJ sensors in heat-sensitive applications such as flexible substrates, or for the design of low-footprint on-chip multiaxial sensing devices.

  15. Seebeck effect in magnetic tunnel junctions.

    Science.gov (United States)

    Walter, Marvin; Walowski, Jakob; Zbarsky, Vladyslav; Münzenberg, Markus; Schäfers, Markus; Ebke, Daniel; Reiss, Günter; Thomas, Andy; Peretzki, Patrick; Seibt, Michael; Moodera, Jagadeesh S; Czerner, Michael; Bachmann, Michael; Heiliger, Christian

    2011-10-01

    Creating temperature gradients in magnetic nanostructures has resulted in a new research direction, that is, the combination of magneto- and thermoelectric effects. Here, we demonstrate the observation of one important effect of this class: the magneto-Seebeck effect. It is observed when a magnetic configuration changes the charge-based Seebeck coefficient. In particular, the Seebeck coefficient changes during the transition from a parallel to an antiparallel magnetic configuration in a tunnel junction. In this respect, it is the analogue to the tunnelling magnetoresistance. The Seebeck coefficients in parallel and antiparallel configurations are of the order of the voltages known from the charge-Seebeck effect. The size and sign of the effect can be controlled by the composition of the electrodes' atomic layers adjacent to the barrier and the temperature. The geometric centre of the electronic density of states relative to the Fermi level determines the size of the Seebeck effect. Experimentally, we realized 8.8% magneto-Seebeck effect, which results from a voltage change of about -8.7 μV K⁻¹ from the antiparallel to the parallel direction close to the predicted value of -12.1 μV K⁻¹. In contrast to the spin-Seebeck effect, it can be measured as a voltage change directly without conversion of a spin current.

  16. Gamma Radiation Tolerance of Magnetic Tunnel Junctions

    Science.gov (United States)

    Ren, Fanghui; Jander, Albrecht; Dhagat, Pallavi; Nordman, Cathy

    2011-10-01

    Determining the radiation tolerance of magnetic tunnel junctions (MTJ), which are the storage elements of non-volatile magnetoresistive random access memories (MRAM), is important for investigating their potential application in space. In this effort, the effect of gamma radiation on MTJs with MgO tunnel barriers was studied. Experimental and control groups of samples were characterized by ex situ measurements of the magnetoresistive hysteresis loops and I-V curves. The experimental group was exposed to gamma rays from a ^60Co source. The samples initially received a dose of 5.9 Mrad (Si) after which they were again characterized electrically and magnetically. Irradiation was then continued for a cumulative dose of 10 Mrad and the devices re-measured. The result shows no change in magnetic properties such as coercivity or exchange coupling due to irradiation. After correcting for differences in temperature at the time of testing, the tunneling magnetoresistance was also found to be unchanged. Thus, it has been determined that MgO-based MTJs are highly tolerant of gamma radiation, particularly in comparison to silicon field-effect transistors which have been shown to degrade with gamma ray exposure even as low as 100 Krad [Zhiyuan Hu. et al., IEEE trans. on Nucl. Sci., vol. 58, 2011].

  17. Co2FeAl based magnetic tunnel junctions with BaO and MgO/BaO barriers

    Directory of Open Access Journals (Sweden)

    J. Rogge

    2015-07-01

    Full Text Available We succeed to integrate BaO as a tunneling barrier into Co2FeAl based magnetic tunnel junctions (MTJs. By means of Auger electron spectroscopy it could be proven that the applied annealing temperatures during BaO deposition and afterwards do not cause any diffusion of Ba neither into the lower Heusler compound lead nor into the upper Fe counter electrode. Nevertheless, a negative tunnel magnetoresistance (TMR ratio of -10% is found for Co2FeAl (24 nm / BaO (5 nm / Fe (7 nm MTJs, which can be attributed to the preparation procedure and can be explained by the formation of Co- and Fe-oxides at the interfaces between the Heusler and the crystalline BaO barrier by comparing with theory. Although an amorphous structure of the BaO barrier seems to be confirmed by high-resolution transmission electron microscopy (TEM, it cannot entirely be ruled out that this is an artifact of TEM sample preparation due to the sensitivity of BaO to moisture. By replacing the BaO tunneling barrier with an MgO/BaO double layer barrier, the electric stability could effectively be increased by a factor of five. The resulting TMR effect is found to be about +20% at room temperature, although a fully antiparallel state has not been realized.

  18. Addressing the challenges of using ferromagnetic electrodes in the magnetic tunnel junction-based molecular spintronics devices

    Science.gov (United States)

    Tyagi, Pawan; Friebe, Edward; Baker, Collin

    2015-11-01

    Addressing the challenges of using high-Curie temperature ferromagnetic (FM) electrodes is critical for molecular spintronics devices (MSDs) research. Two FM electrodes simultaneously chemically bonded with a thiol-functionalized molecule can produce novel MSDs to exploring new quantum mechanical phenomenon and computer technologies. For developing a commercially viable MSD, it is crucial to developing a device fabrication scheme that carefully considers FM electrodes' susceptibility to oxidation, chemical etching, and stress-induced deformations during fabrication and usage. This paper studies NiFe, an alloy extensively used in present-day memory devices and high-temperature engineering applications, as a candidate FM electrode for the fabrication of MSDs. Our spectroscopic reflectance studies show that NiFe oxidized aggressively after heating beyond 90 °C. The NiFe surfaces, aged for several months or heated for several minutes below 90 °C, exhibited remarkable electrochemical activity and were found suitable for chemical bonding with the thiol-functionalized molecular device elements. NiFe also demonstrated excellent etching resistance against commonly used solvents and lithography related chemicals. Additionally, NiFe mitigated the adverse effects of mechanical stress by subsiding the stress-induced deformities. A magnetic tunnel junction-based MSD approach was designed by carefully considering the merits and limitations of NiFe. The device fabrication protocol considers the safe temperature limit to avoiding irreversible surface oxidation, the effect of mechanical stresses, surface roughness, and chemical etching. This paper provides foundational experimental insights in realizing a versatile MSD allowing a wide range of transport and magnetic studies.

  19. Addressing the challenges of using ferromagnetic electrodes in the magnetic tunnel junction-based molecular spintronics devices

    Energy Technology Data Exchange (ETDEWEB)

    Tyagi, Pawan, E-mail: ptyagi@udc.edu; Friebe, Edward; Baker, Collin [University of the District of Columbia, Department of Mechanical Engineering (United States)

    2015-11-15

    Addressing the challenges of using high-Curie temperature ferromagnetic (FM) electrodes is critical for molecular spintronics devices (MSDs) research. Two FM electrodes simultaneously chemically bonded with a thiol-functionalized molecule can produce novel MSDs to exploring new quantum mechanical phenomenon and computer technologies. For developing a commercially viable MSD, it is crucial to developing a device fabrication scheme that carefully considers FM electrodes’ susceptibility to oxidation, chemical etching, and stress-induced deformations during fabrication and usage. This paper studies NiFe, an alloy extensively used in present-day memory devices and high-temperature engineering applications, as a candidate FM electrode for the fabrication of MSDs. Our spectroscopic reflectance studies show that NiFe oxidized aggressively after heating beyond ∼90 °C. The NiFe surfaces, aged for several months or heated for several minutes below ∼90 °C, exhibited remarkable electrochemical activity and were found suitable for chemical bonding with the thiol-functionalized molecular device elements. NiFe also demonstrated excellent etching resistance against commonly used solvents and lithography related chemicals. Additionally, NiFe mitigated the adverse effects of mechanical stress by subsiding the stress-induced deformities. A magnetic tunnel junction-based MSD approach was designed by carefully considering the merits and limitations of NiFe. The device fabrication protocol considers the safe temperature limit to avoiding irreversible surface oxidation, the effect of mechanical stresses, surface roughness, and chemical etching. This paper provides foundational experimental insights in realizing a versatile MSD allowing a wide range of transport and magnetic studies.

  20. Response of magnetic tunnel junction-based spin-torque oscillator to series of sub-nanosecond magnetic pulses

    Science.gov (United States)

    Nagasawa, Tazumi; Suto, Hirofumi; Kudo, Kiwamu; Mizushima, Koichi; Sato, Rie

    2016-11-01

    Spin-torque oscillator (STO) read heads with a high data transfer rate for hard disk drives have been proposed. To investigate the oscillation stability and frequency agility of the STO under magnetic pulses, we measured the response waveforms of the STO to a series of sub-nanosecond magnetic pulses and calculated the delay-detection output signal from the STO waveforms. We found that stable oscillation was maintained under the magnetic pulses and that the delay-detection output signal reproduced the applied pulse pattern. The results indicate that the STO read heads can operate at data transfer rates higher than 2 Gbits/s.

  1. A fully automated in vitro diagnostic system based on magnetic tunnel junction arrays and superparamagnetic particles

    Science.gov (United States)

    Lian, Jie; Chen, Si; Qiu, Yuqin; Zhang, Suohui; Shi, Stone; Gao, Yunhua

    2012-04-01

    A fully automated in vitro diagnostic (IVD) system for diagnosing acute myocardial infarction was developed using high sensitivity MTJ array as sensors and nano-magnetic particles as tags. On the chip is an array of 12 × 106 MTJ devices integrated onto a 3 metal layer CMOS circuit. The array is divided into 48 detection areas, therefore 48 different types of bio targets can be analyzed simultaneously if needed. The chip is assembled with a micro-fluidic cartridge which contains all the reagents necessary for completing the assaying process. Integrated with electrical, mechanical and micro-fluidic pumping devices and with the reaction protocol programed in a microprocessor, the system only requires a simple one-step analyte application procedure to operate and yields results of the three major AMI bio-markers (cTnI, MYO, CK-MB) in 15 mins.

  2. TMR and spin-dependent transport of polyacetylene-based magnetic junctions

    Energy Technology Data Exchange (ETDEWEB)

    Ketabi, S A; Khozestani, H F [School of Physics, Damghan University, Damghan (Iran, Islamic Republic of); Vahedi, D, E-mail: saketabi@du.ac.ir [Department of Physics and Center for Nanotechnology Research, Ferdowsi University of Mashhad, Mashhad (Iran, Islamic Republic of)

    2011-01-15

    A numerical study is presented that investigates the spin-dependent transport through a trans-polyacetylene (trans-PA) molecule sandwiched between ferromagnetic (FM) contacts. Using the tight-binding procedure and in the framework of a generalized Green's function technique, the room temperature current-voltage characteristics of the trans-PA molecule and the tunnel magnetoresistance (TMR) of the electrode/trans-PA/electrode structure, with iron (Fe) as the electrode, are studied. It is found that the parallel arrangement of magnetic moments in FM electrodes causes a much higher current through the polyacetylene molecule than does the anti-parallel arrangement. Also, our results indicate that TMR has its maximum value (more than 60%) at low bias voltages.

  3. On-chip measurement of the Brownian relaxation frequency of magnetic beads using magnetic tunneling junctions

    DEFF Research Database (Denmark)

    Donolato, M.; Sogne, E.; Dalslet, Bjarke Thomas

    2011-01-01

    We demonstrate the detection of the Brownian relaxation frequency of 250 nm diameter magnetic beads using a lab-on-chip platform based on current lines for exciting the beads with alternating magnetic fields and highly sensitive magnetic tunnel junction (MTJ) sensors with a superparamagnetic free...

  4. Characterization of magnetic tunnel junction test pads

    DEFF Research Database (Denmark)

    Østerberg, Frederik Westergaard; Kjær, Daniel; Nielsen, Peter Folmer

    2015-01-01

    We show experimentally as well as theoretically that patterned magnetic tunnel junctions can be characterized using the current-in-plane tunneling (CIPT) method, and the key parameters, the resistance-area product (RA) and the tunnel magnetoresistance (TMR), can be determined. The CIPT method...... on square tunnel junction pads with varying sizes and analyze the measured data using both the original and the modified CIPT model. Thus, we determine in which sample size range the modified CIPT model is needed to ensure validity of the extracted sample parameters, RA and TMR. In addition, measurements...... as a function of position on a square tunnel junction pad are used to investigate the sensitivity of the measurement results to probe misalignment....

  5. Electrical-field and spin-transfer torque effects in CoFeB/MgO-based perpendicular magnetic tunnel junction

    Directory of Open Access Journals (Sweden)

    Chikako Yoshida

    2016-05-01

    Full Text Available The electric-field (E dependence of the magnetoresistance (RH loops for top-pinned perpendicular CoFeB/MgO-based magnetic tunnel junctions (MTJs in the presence of a spin-transfer torque (STT-current was measured. The E effects were distinguished from the STT-current effects using a micromagnetic simulation. The coercive field (Hc decreased and the RH loop shifted as both the positive and negative bias E increased owing to the STT current. Furthermore, E-assisted switching for an MTJ with a diameter of 20 nm, which exhibited a nearly coherent magnetization reversal, was demonstrated using micromagnetic simulation.

  6. Electrical-field and spin-transfer torque effects in CoFeB/MgO-based perpendicular magnetic tunnel junction

    Energy Technology Data Exchange (ETDEWEB)

    Yoshida, Chikako, E-mail: cyoshida@jp.fujitsu.com; Noshiro, Hideyuki; Yamazaki, Yuichi; Sugii, Toshihiro [Fujitsu limited, 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa, 243-0197 (Japan); Furuya, Atsushi; Ataka, Tadashi; Tanaka, Tomohiro; Uehara, Yuji [Fujitsu limited, 4-1-1 Kamikodanaka, Nakahara-ku, Kawasaki, Kanagawa, 211-8588 (Japan)

    2016-05-15

    The electric-field (E) dependence of the magnetoresistance (RH) loops for top-pinned perpendicular CoFeB/MgO-based magnetic tunnel junctions (MTJs) in the presence of a spin-transfer torque (STT)-current was measured. The E effects were distinguished from the STT-current effects using a micromagnetic simulation. The coercive field (H{sub c}) decreased and the RH loop shifted as both the positive and negative bias E increased owing to the STT current. Furthermore, E-assisted switching for an MTJ with a diameter of 20 nm, which exhibited a nearly coherent magnetization reversal, was demonstrated using micromagnetic simulation.

  7. Thick CoFeB with perpendicular magnetic anisotropy in CoFeB-MgO based magnetic tunnel junction

    Directory of Open Access Journals (Sweden)

    V. B. Naik

    2012-12-01

    Full Text Available We have investigated the effect of an ultra-thin Ta insertion in the CoFeB (CoFeB/Ta/CoFeB free layer (FL on magnetic and tunneling magnetoresistance (TMR properties of a CoFeB-MgO system with perpendicular magnetic anisotropy (PMA. It is found that the critical thickness (tc to sustain PMA is doubled (tc = 2.6 nm in Ta-inserted CoFeB FL as compared to single CoFeB layer (tc = 1.3 nm. While the effective magnetic anisotropy is found to increase with Ta insertion, the saturation magnetization showed a slight reduction. As the CoFeB thickness increasing, the thermal stability of Ta inserted structure is significantly increased by a factor of 2.5 for total CoFeB thickness less than 2 nm. We have observed a reasonable value of TMR for a much thicker CoFeB FL (thickness = 2-2.6 nm with Ta insertion, and without significant increment in resistance-area product. Our results reveal that an ultra-thin Ta insertion in CoFeB might pay the way towards developing the high-density memory devices with enhanced thermal stability.

  8. Room Temperature Magnetic Barrier Layers in Magnetic Tunnel Junctions

    Energy Technology Data Exchange (ETDEWEB)

    Nelson-Cheeseman, B. B.; Wong, F. J.; Chopdekar, R. V.; Arenholz, E.; Suzuki, Y.

    2010-03-09

    We investigate the spin transport and interfacial magnetism of magnetic tunnel junctions with highly spin polarized LSMO and Fe3O4 electrodes and a ferrimagnetic NiFe2O4 (NFO) barrier layer. The spin dependent transport can be understood in terms of magnon-assisted spin dependent tunneling where the magnons are excited in the barrier layer itself. The NFO/Fe3O4 interface displays strong magnetic coupling, while the LSMO/NFO interface exhibits clear decoupling as determined by a combination of X-ray absorption spectroscopy and X-ray magnetic circular dichroism. This decoupling allows for distinct parallel and antiparallel electrode states in this all-magnetic trilayer. The spin transport of these devices, dominated by the NFO barrier layer magnetism, leads to a symmetric bias dependence of the junction magnetoresistance at all temperatures.

  9. Interfacial capacitance effects in magnetic tunneling junctions

    CERN Document Server

    Landry, G; Du, J; Xiao, J Q

    2001-01-01

    We have investigated the AC transport properties of magnetic tunnel junctions (MTJ) in order to characterize interfacial properties. One such property is interfacial charge accumulation, which leads to a voltage drop in the electrodes of the MTJ and the measured capacitance differing from the geometrical capacitance. Through measurement of capacitance spectra, we have extracted an interfacial capacitance of 16 mu F/cm sup 2 per interface and a screening length of 0.55 A for FeNi electrodes.

  10. Inelastic electron tunneling spectroscopy of CoFeB/ MgO/ CoFeB based magnetic tunnel junctions in high magnetic fields

    Energy Technology Data Exchange (ETDEWEB)

    Walter, Marvin; Zbarskyy, Vladyslav; Muenzenberg, Markus [I. Phys. Inst., Georg-August-Universitaet Goettingen, 37077 Goettingen (Germany); Seibt, Michael [IV. Phys. Inst., Georg-August-Universitaet Goettingen, 37077 Goettingen (Germany); Drewello, Volker; Schaefers, Markus; Reiss, Guenter; Thomas, Andy [Bielefeld University, Physics Department, 33501 Bielefeld (Germany)

    2010-07-01

    Magnetic tunnel junctions (MTJs) showing a high tunnel magnetoresistance (TMR) are important for the fabrication of MRAM devices when combined with current induced switching. We discuss inelastic electron tunneling spectroscopy (IETS) measurements on CoFeB/MgO/CoFeB magnetic tunnel junctions. The junctions are prepared by means of magnetron sputtering of CoFeB and e-beam evaporation of stoichiometric MgO. Structuring of the multilayer is done using a photolithography process and Argon ion-milling. The IETS measurements are carried out at low temperatures down to 4.2 K, high magnetic fields up to 9 T and in parallel as well as antiparallel electrode configuration in order to distinguish between different kind of excitations such as e.g. magnons and phonons. Furthermore, oxygen vacancies in the MgO barrier are controlled through variation of the sample temperature during e-beam growth to investigate the influences of these vacancies on the tunneling spectra of MTJs.

  11. Co2MnSi Heusler alloy as an enhancing layer of perpendicular magnetic anisotropy for MgO-based magnetic tunnel junctions with L10 ordered FePd

    Science.gov (United States)

    Bae, Taejin; Ko, Jungho; Lee, Sangho; Cha, Jongin; Hong, Jongill

    2016-01-01

    Ultra-thin Co2MnSi Heusler alloy improves perpendicular magnetic anisotropy of FePd in an MgO-based magnetic tunnel junction after annealing it just once at a temperature of as low as 400 °C. Co2MnSi as thin as 1.0 nm inserted between MgO and FePd facilitated phase-transformation of 3-nm-thick FePd to ordered L10 and led a change in magnetic anisotropy to perpendicular-to-the-plane. To make it even better, FePd also helped the phase-transformation of Co2MnSi to ordered B2 known to have high spin polarization, which makes the L10 FePd/B2 Co2MnSi bilayer promising for perpendicular-magnetic tunnel junction and improving both thermal stability and tunnel magnetoresistance.

  12. Unidirectional Spin-Dependent Molecule-Ferromagnet Hybridized States Anisotropy in Cobalt Phthalocyanine Based Magnetic Tunnel Junctions

    Science.gov (United States)

    Barraud, Clément; Bouzehouane, Karim; Deranlot, Cyrile; Fusil, Stéphane; Jabbar, Hashim; Arabski, Jacek; Rakshit, Rajib; Kim, Dong-Jik; Kieber, Christophe; Boukari, Samy; Bowen, Martin; Beaurepaire, Eric; Seneor, Pierre; Mattana, Richard; Petroff, Frédéric

    2015-05-01

    Organic or molecular spintronics is a rising field of research at the frontier between condensed matter physics and chemistry. It aims to mix spin physics and the richness of chemistry towards designing new properties for spin electronics devices through engineering at the molecular scale. Beyond the expectation of a long spin lifetime, molecules can be also used to tailor the spin polarization of the injected current through the spin-dependent hybridization between molecules and ferromagnetic electrodes. In this Letter, we provide direct evidence of a hybrid interface spin polarization reversal due to the differing hybridization between phthalocyanine molecules and each cobalt electrode in Co /CoPc /Co magnetic tunnel junctions. Tunnel magnetoresistance and anisotropic tunnel magnetoresistance experiments show that interfacial hybridized electronic states have a unidirectional anisotropy that can be controlled by an electric field and that spin hybridization at the bottom and top interfaces differ, leading to an inverse tunnel magnetoresistance.

  13. Bias-voltage dependence of perpendicular spin-transfer torque in asymmetric MgO-based magnetic tunnel junctions

    KAUST Repository

    Oh, Se Chung

    2009-10-25

    Spin-transfer torque (STT) allows the electrical control of magnetic states in nanostructures. The STT in magnetic tunnel junctions (MTJs) is of particular importance owing to its potential for device applications. It has been demonstrated that the MTJ has a sizable perpendicular STT (, field-like torque), which substantially affects STT-driven magnetization dynamics. In contrast to symmetric MTJs where the bias dependence of is quadratic, it is theoretically predicted that the symmetry breaking of the system causes an extra linear bias dependence. Here, we report experimental results that are consistent with the predicted linear bias dependence in asymmetric MTJs. The linear contribution is quite significant and its sign changes from positive to negative as the asymmetry is modified. This result opens a way to design the bias dependence of the field-like term, which is useful for device applications by allowing, in particular, the suppression of the abnormal switching-back phenomena. © 2009 Macmillan Publishers Limited. All rights reserved.

  14. Fabrication of magnetic tunnel junctions with epitaxial and textured ferromagnetic layers

    Science.gov (United States)

    Chang, Y. Austin; Yang, Jianhua Joshua

    2008-11-11

    This invention relates to magnetic tunnel junctions and methods for making the magnetic tunnel junctions. The magnetic tunnel junctions include a tunnel barrier oxide layer sandwiched between two ferromagnetic layers both of which are epitaxial or textured with respect to the underlying substrate upon which the magnetic tunnel junctions are grown. The magnetic tunnel junctions provide improved magnetic properties, sharper interfaces and few defects.

  15. Fully magnetic manganite spin filter tunnel junctions

    Science.gov (United States)

    Prasad, Bhagwati; Blamire, Mark G.

    2016-09-01

    In this paper we demonstrate spintronic devices which combine magnetic tunnel junctions with a spin-filtering tunnel barrier. These consist of an ultrathin ferromagnetic insulating barrier, Sm0.75Sr0.25MnO3, sandwiched between two ferromagnetic half-metallic manganite electrodes, La0.7Sr0.3MnO3 and La0.7Ca0.3MnO3, in a nanopillar structure. Depending on the relative magnetic configurations of barrier and electrode layers, three resistance states are well defined, which therefore represent a potential three-state memory concept. These results open the way for the development of spintronic devices by exploiting the many degrees of freedom of perovskite manganite heterostructure systems.

  16. Tantalum oxide barrier in magnetic tunnel junctions

    Institute of Scientific and Technical Information of China (English)

    Guanghua Yu; Tingting Ren; Wei Ji; Jiao Teng; Fengwu Zhu

    2004-01-01

    Tantalum as an insulating barrier can take the place of Al in magnetic tunnel junctions (MTJs). Ta barriers in MTJs were fabricated by natural oxidation. X-ray photoelectron spectroscopy (XPS) was used to characterize the oxidation states of Ta barrier.The experimental results show that the chemical state of tantalum is pure Ta5+ and the thickness of the oxide is 1.3 nm. The unoxidized Ta in the barrier may chemically reacted with NiFe layer which is usually used in MTJs to form an intermetallic compound,NiTa2. A magnetic "dead layer" could be produced in the NiFe/Ta interface. The "dead layer" is likely to influence the spinning electron transport and the magnetoresistance effect.

  17. Coherent Magnetic Switching in a Permalloy Submicron Junction

    CERN Document Server

    Wang, Junlin; Lu, Xianyang; Zhang, Jason; Ling, Hua; Wu, Jing; Zhou, Yan; Xu, Yongbing

    2016-01-01

    This work provides a numerical micromagnetic study of the magnetic switching of a submicron magnetic junction in a Permalloy (Ni80Fe20) cross structure. The simulation results demonstrate that the magnetic domain at the junction can be controlled to switch coherently by the applied magnetic field. This coherent magnetic switching in the cross structure has been found to be reversible and the 2-bit information can be written in the magnetic junction. For information storage, this kind of device can also realize the function of a quaternary arithmetic unit. By varying the direction of the applied magnetic field, we have demonstrated that this magnetic junction could be the building block for a magnetoresistive random access memory (MRAM) or a quaternary magnetic arithmetic unit.

  18. Observation of supercurrent in graphene-based Josephson junction

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Libin; Li, Sen; Kang, Ning [Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871 (China); Xu, Chuan; Ren, Wencai [Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016 (China)

    2015-07-01

    Josephson junctions with a normal metal region sandwiched between two superconductors (S) are known as superconductor- normal-superconductor (SNS) structures. It has attracted significant attention especially when changing the normal metal with graphene, which allow for high tunability with the gate voltage and to study the proximity effect of the massless Dirac fermions. Here we report our work on graphene-based Josephson junction with a new two dimensional superconductor crystal, which grown directly on graphene, as superconducting electrodes. At low temperature, we observer proximity effect induced supercurrent flowing through the junction. The temperature and the magnetic field dependences of the critical current characteristics of the junction are also studied. The critical current exhibits a Fraunhofer-type diffraction pattern against magnetic field. Our experiments provided a new route of fabrication of graphene-based Josephson junction.

  19. Seebeck Effect in Magnetic Tunnel Junctions

    OpenAIRE

    Walter, Marvin; Walowski, Jakob; Zbarsky, Vladyslav; Münzenberg, Markus; Schäfers, Markus; Ebke, Daniel; Reiss, Günter; Thomas, Andy; Peretzki, Patrick; Seibt, Michael; Moodera, Jagadeesh S.; Czerner, Michael; Bachmann, Michael; Heiliger, Christian

    2011-01-01

    Creating temperature gradients in magnetic nanostructures has resulted in a new research direction, i.e., the combination of magneto- and thermoelectric effects. Here, we demonstrate the observation of one important effect of this class: the magneto-Seebeck effect. It is observed when a magnetic configuration changes the charge based Seebeck coefficient. In particular, the Seebeck coefficient changes during the transition from a parallel to an antiparallel magnetic configuration in a tunnel j...

  20. Testing epitaxial Co{sub 1.5}Fe{sub 1.5}Ge(001) electrodes in MgO-based magnetic tunnel junctions

    Energy Technology Data Exchange (ETDEWEB)

    Neggache, A. [Institut Jean Lamour, UMR CNRS 7198, Université de Lorraine, 54506 Vandoeuvre lès Nancy (France); Synchrotron SOLEIL-CNRS, L' Orme des Merisiers, Saint-Aubin BP48, 91192 Gif-sur-Yvette (France); Hauet, T.; Petit-Watelot, S.; Boulet, P.; Andrieu, S., E-mail: stephane.andrieu@univ-lorraine.fr [Institut Jean Lamour, UMR CNRS 7198, Université de Lorraine, 54506 Vandoeuvre lès Nancy (France); Bertran, F.; Le Fèvre, P.; Ohresser, P. [Synchrotron SOLEIL-CNRS, L' Orme des Merisiers, Saint-Aubin BP48, 91192 Gif-sur-Yvette (France); Devolder, T. [Institut d' Electronique Fondamentale, CNRS, UMR 8622, 91405 Orsay (France); Mewes, C. [Department of Physics and Astronomy/Center for Materials for Information Technology, University of Alabama, Tuscaloosa, Alabama 35487 (United States); Maat, S.; Childress, J. R. [San Jose Research Center, HGST, a Western Digital company, San Jose, California 95135 (United States)

    2014-06-23

    The ability of the full Heusler alloy Co{sub 1.5}Fe{sub 1.5}Ge(001) (CFG) to be a Half-Metallic Magnetic (HMM) material is investigated. Epitaxial CFG(001) layers were grown by molecular beam epitaxy. The results obtained using electron diffraction, X-ray diffraction, and X-ray magnetic circular dichroism are consistent with the full Heusler structure. The pseudo-gap in the minority spin density of state typical in HMM is examined using spin-resolved photoemission. Interestingly, the spin polarization found to be negative at E{sub F} in equimolar CoFe(001) is observed to shift to positive values when inserting Ge in CoFe. However, no pseudo-gap is found at the Fermi level, even if moderate magnetization and low Gilbert damping are observed as expected in HMM materials. Magneto-transport properties in MgO-based magnetic tunnel junctions using CFG electrodes are investigated via spin and symmetry resolved photoemission.

  1. Magnetic domain wall engineering in a nanoscale permalloy junction

    Science.gov (United States)

    Wang, Junlin; Zhang, Xichao; Lu, Xianyang; Zhang, Jason; Yan, Yu; Ling, Hua; Wu, Jing; Zhou, Yan; Xu, Yongbing

    2017-08-01

    Nanoscale magnetic junctions provide a useful approach to act as building blocks for magnetoresistive random access memories (MRAM), where one of the key issues is to control the magnetic domain configuration. Here, we study the domain structure and the magnetic switching in the Permalloy (Fe20Ni80) nanoscale magnetic junctions with different thicknesses by using micromagnetic simulations. It is found that both the 90-° and 45-° domain walls can be formed between the junctions and the wire arms depending on the thickness of the device. The magnetic switching fields show distinct thickness dependencies with a broad peak varying from 7 nm to 22 nm depending on the junction sizes, and the large magnetic switching fields favor the stability of the MRAM operation.

  2. FeGa based tunneling magnetoresistance junctions and strain sensors

    OpenAIRE

    Thajudin, Ahmed Fazir

    2012-01-01

    Tunnel magnetoresistance (TMR) and inverse magnetostriction based strain gauges have gained immense importance due to their high spatial resolution and extremely high gauge factors. A TMR junction comprises of two ferromagnetic electrodes separated by an insulating barrier layer. One of the ferromagnetic layer is soft magnetic which is free to rotate its magnetization under external magnetic field, the other ferromagnet is hard magnetic and is stable under the same external field. An intentio...

  3. Dependency of Tunneling-Magnetoresistance Ratio on Nanoscale Spacer Thickness and Material for Double MgO Based Perpendicular-Magnetic-Tunneling-Junction.

    Science.gov (United States)

    Lee, Du-Yeong; Hong, Song-Hwa; Lee, Seung-Eun; Park, Jea-Gun

    2016-12-08

    It was found that in double MgO based perpendicular magnetic tunneling junction spin-valves ex-situ annealed at 400 °C, the tunneling magnetoresistance ratio was extremely sensitive to the material and thickness of the nanoscale spacer: it peaked at a specific thickness (0.40~0.53 nm), and the TMR ratio for W spacers (~134%) was higher than that for Ta spacers (~98%). This dependency on the spacer material and thickness was associated with the (100) body-centered-cubic crystallinity of the MgO layers: the strain enhanced diffusion length in the MgO layers of W atoms (~1.40 nm) was much shorter than that of Ta atoms (~2.85 nm) and the shorter diffusion length led to the MgO layers having better (100) body-centered-cubic crystallinity.

  4. Design and fabrication of a perpendicular magnetic tunnel junction based nonvolatile programmable switch achieving 40% less area using shared-control transistor structure.

    Science.gov (United States)

    Suzuki, D; Natsui, M; Mochizuki, A; Miura, S; Honjo, H; Kinoshita, K; Fukami, S; Sato, H; Ikeda, S; Endoh, T; Ohno, H; Hanyu, T

    2014-05-07

    A compact nonvolatile programmable switch (NVPS) using 90 nm CMOS technology together with perpendicular magnetic tunnel junction (p-MTJ) devices is fabricated for zero-standby-power field-programmable gate array. Because routing information does not change once it is programmed into an NVPS, high-speed read and write accesses are not required and a write-control transistor can be shared among all the NVPSs, which greatly simplifies structure of the NVPS. In fact, the effective area of the proposed NVPS is reduced by 40% compared to that of a conventional MTJ-based NVPS. The instant on/off behavior without external nonvolatile memory access is also demonstrated using the fabricated test chip.

  5. MgAl{sub 2}O{sub 4}(001) based magnetic tunnel junctions made by direct sputtering of a sintered spinel target

    Energy Technology Data Exchange (ETDEWEB)

    Belmoubarik, Mohamed; Sukegawa, Hiroaki, E-mail: sukegawa.hiroaki@nims.go.jp; Ohkubo, Tadakatsu; Mitani, Seiji; Hono, Kazuhiro [National Institute for Materials Science, 1-2-1 Sengen, Tsukuba 305-0047 (Japan)

    2016-03-28

    We developed a fabrication process of an epitaxial MgAl{sub 2}O{sub 4} barrier for magnetic tunnel junctions (MTJs) using a direct sputtering method from an MgAl{sub 2}O{sub 4} spinel sintered target. Annealing the sputter-deposited MgAl{sub 2}O{sub 4} layer sandwiched between Fe electrodes led to the formation of a (001)-oriented cation-disorder spinel with atomically sharp interfaces and lattice-matching with the Fe electrodes. A large tunnel magnetoresistance ratio up to 245% at 297 K (436% at 3 K) was achieved in the Fe/MgAl{sub 2}O{sub 4}/Fe(001) MTJ as well as an excellent bias voltage dependence. These results indicate that the direct sputtering is an alternative method for the realization of high performance MTJs with a spinel-based tunnel barrier.

  6. Temperature dependence of microwave oscillations in magnetic tunnel junctions with a perpendicularly magnetized free layer

    Energy Technology Data Exchange (ETDEWEB)

    Guo, Peng; Feng, Jiafeng, E-mail: hxwei@iphy.ac.cn, E-mail: jiafengfeng@iphy.ac.cn; Wei, Hongxiang, E-mail: hxwei@iphy.ac.cn, E-mail: jiafengfeng@iphy.ac.cn; Han, Xiufeng [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Fang, Bin; Zhang, Baoshun; Zeng, Zhongming [Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Ruoshui Road 398, Suzhou 215123 (China)

    2015-01-05

    We experimentally study the temperature dependence of the spin-transfer-torque-induced microwave oscillations in MgO-based magnetic tunnel junction nanopillars with a perpendicularly magnetized free layer. We demonstrate that the oscillation frequency increases rapidly with decreasing temperature, which is mainly ascribed to the temperature dependence of both the saturation magnetization and the perpendicular magnetic anisotropy. We also find that a strong temperature dependence of the output power while a nonmonotonic temperature dependence of spectral linewidth are maintained for a constant dc bias in measured temperature range. Possible mechanisms leading to the different dependences of oscillation frequency, output power, and linewidth are discussed.

  7. Spin-transfer torque switched magnetic tunnel junctions in magnetic random access memory

    Science.gov (United States)

    Sun, Jonathan Z.

    2016-10-01

    Spin-transfer torque (or spin-torque, or STT) based magnetic tunnel junction (MTJ) is at the heart of a new generation of magnetism-based solid-state memory, the so-called spin-transfer-torque magnetic random access memory, or STT-MRAM. Over the past decades, STT-based switchable magnetic tunnel junction has seen progress on many fronts, including the discovery of (001) MgO as the most favored tunnel barrier, which together with (bcc) Fe or FeCo alloy are yielding best demonstrated tunnel magneto-resistance (TMR); the development of perpendicularly magnetized ultrathin CoFeB-type of thin films sufficient to support high density memories with junction sizes demonstrated down to 11nm in diameter; and record-low spin-torque switching threshold current, giving best reported switching efficiency over 5 kBT/μA. Here we review the basic device properties focusing on the perpendicularly magnetized MTJs, both in terms of switching efficiency as measured by sub-threshold, quasi-static methods, and of switching speed at super-threshold, forced switching. We focus on device behaviors important for memory applications that are rooted in fundamental device physics, which highlights the trade-off of device parameters for best suitable system integration.

  8. Turbulence-induced magnetic flux asymmetry at nanoscale junctions

    OpenAIRE

    2007-01-01

    It was recently predicted [J. Phys.: Condens. Matter 18, 11059 (2006)] that turbulence of the electron flow may develop at nonadiabatic nanoscale junctions under appropriate conditions. Here we show that such an effect leads to an asymmetric current-induced magnetic field on the two sides of an otherwise symmetric junction. We propose that by measuring the fluxes ensuing from these fields across two surfaces placed at the two sides of the junction would provide direct and noninvasive evidence...

  9. Evidence of a Symmetry-Dependent Metallic Barrier in Fully Epitaxial MgO Based Magnetic Tunnel Junctions

    Science.gov (United States)

    Greullet, F.; Tiusan, C.; Montaigne, F.; Hehn, M.; Halley, D.; Bengone, O.; Bowen, M.; Weber, W.

    2007-11-01

    We report on the experimental observation of tunneling across an ultrathin metallic Cr spacer layer that is inserted at the interface of a Fe/MgO/Fe(001) junction. We show how this remarkable behavior in a solid-state device reflects a quenching in the transmission of particular electronic states, as expected from the symmetry-filtering properties of the MgO barrier and the band structure of the bcc Cr(001) spacer in the epitaxial junction stack. This ultrathin Cr metallic barrier can promote quantum well states in an adjacent Fe layer.

  10. Giant voltage manipulation of MgO-based magnetic tunnel junctions via localized anisotropic strain: A potential pathway to ultra-energy-efficient memory technology

    Science.gov (United States)

    Zhao, Zhengyang; Jamali, Mahdi; D'Souza, Noel; Zhang, Delin; Bandyopadhyay, Supriyo; Atulasimha, Jayasimha; Wang, Jian-Ping

    2016-08-01

    Voltage control of magnetization via strain in piezoelectric/magnetostrictive systems is a promising mechanism to implement energy-efficient straintronic memory devices. Here, we demonstrate giant voltage manipulation of MgO magnetic tunnel junctions (MTJ) on a Pb(Mg1/3Nb2/3)0.7Ti0.3O3 piezoelectric substrate with (001) orientation. It is found that the magnetic easy axis, switching field, and the tunnel magnetoresistance (TMR) of the MTJ can be efficiently controlled by strain from the underlying piezoelectric layer upon the application of a gate voltage. Repeatable voltage controlled MTJ toggling between high/low-resistance states is demonstrated. More importantly, instead of relying on the intrinsic anisotropy of the piezoelectric substrate to generate the required strain, we utilize anisotropic strain produced using a local gating scheme, which is scalable and amenable to practical memory applications. Additionally, the adoption of crystalline MgO-based MTJ on piezoelectric layer lends itself to high TMR in the strain-mediated MRAM devices.

  11. Synthesis of magnetic tunnel junctions with full in situ atomic layer and chemical vapor deposition processes

    Energy Technology Data Exchange (ETDEWEB)

    Mantovan, R., E-mail: roberto.mantovan@mdm.imm.cnr.it [Laboratorio MDM, IMM-CNR, Via C. Olivetti 2, 20864 Agrate Brianza (Italy); Vangelista, S.; Kutrzeba-Kotowska, B.; Cocco, S.; Lamperti, A.; Tallarida, G. [Laboratorio MDM, IMM-CNR, Via C. Olivetti 2, 20864 Agrate Brianza (MB) (Italy); Mameli, D. [Laboratorio MDM, IMM-CNR, Via C. Olivetti 2, 20864 Agrate Brianza (Italy); Dipartimento di Scienze Chimiche, Universita di Cagliari, Cittadella Universitaria, 09042 Monserrato, Cagliari (Italy); Fanciulli, M. [Laboratorio MDM, IMM-CNR, Via C. Olivetti 2, 20864 Agrate Brianza (Italy); Dipartimento di Scienza dei Materiali, Universita degli studi Milano-Bicocca, Via R Cozzi 53, 20125 Milano (Italy)

    2012-05-01

    Magnetic tunnel junctions, i.e. the combination of two ferromagnetic electrodes separated by an ultrathin tunnel oxide barrier, are core elements in a large variety of spin-based devices. We report on the use of combined chemical vapor and atomic layer deposition processes for the synthesis of magnetic tunnel junctions with no vacuum break. Structural, chemical and morphological characterizations of selected ferromagnetic and oxide layers are reported, together with the evidence of tunnel magnetoresistance effect in patterned Fe/MgO/Co junctions.

  12. Tunnel Junction with Perpendicular Magnetic Anisotropy: Status and Challenges

    Directory of Open Access Journals (Sweden)

    Mengxing Wang

    2015-08-01

    Full Text Available Magnetic tunnel junction (MTJ, which arises from emerging spintronics, has the potential to become the basic component of novel memory, logic circuits, and other applications. Particularly since the first demonstration of current induced magnetization switching in MTJ, spin transfer torque magnetic random access memory (STT-MRAM has sparked a huge interest thanks to its non-volatility, fast access speed, and infinite endurance. However, along with the advanced nodes scaling, MTJ with in-plane magnetic anisotropy suffers from modest thermal stability, high power consumption, and manufactural challenges. To address these concerns, focus of research has converted to the preferable perpendicular magnetic anisotropy (PMA based MTJ, whereas a number of conditions still have to be met before its practical application. This paper overviews the principles of PMA and STT, where relevant issues are preliminarily discussed. Centering on the interfacial PMA in CoFeB/MgO system, we present the fundamentals and latest progress in the engineering, material, and structural points of view. The last part illustrates potential investigations and applications with regard to MTJ with interfacial PMA.

  13. Thermally induced dynamics in ultrathin magnetic tunnel junctions

    NARCIS (Netherlands)

    Ogrodnik, P.; Bauer, G.E.W.; Xia, K.

    2013-01-01

    We consider the magnetization dynamics induced by thermally induced spin transfer torques in thin Fe|MgO|Fe tunnel junctions. The magnetization dynamics is described by the Landau-Lifshitz-Gilbert equation, including the thermal torques as computed from first principles. We show that the angular ske

  14. Design of a low-power nonvolatile flip-flop using three-terminal magnetic-tunnel-junction-based self-terminated mechanism

    Science.gov (United States)

    Suzuki, Daisuke; Hanyu, Takahiro

    2017-04-01

    A nonvolatile flip-flop (NV-FF) using a three-terminal magnetic tunnel junction (3T-MTJ)-based self-terminated mechanism is proposed for a low-power logic LSI while maintaining almost the same performance as a conventional CMOS-based logic LSI. The use of a self-terminated mechanism, which continuously monitors the change in MTJ resistance, makes it possible not only to minimize the write energy consumption for the 3T-MTJ device but also to ensure a reliable write. Moreover, since the write current path is separated from the read current path in the 3T-MTJ device, the sensing circuit and the write driver are individually optimized, which makes it possible to minimize the performance overhead due to additional components. As a result, the write energy of the proposed NV-FF is reduced by 69% with a small performance overhead compared with that of a conventional NV-FF using a worst-case-oriented writing scheme.

  15. Turbulence-induced magnetic flux asymmetry at nanoscale junctions.

    Science.gov (United States)

    Bushong, Neil; Pershin, Yuriy; Di Ventra, Massimiliano

    2007-11-30

    It was recently predicted [J. Phys. Condens. Matter 18, 11059 (2006)] that turbulence of electron flow may develop at nonadiabatic nanoscale junctions under appropriate conditions. Here we show that such an effect leads to an asymmetric current-induced magnetic field on the two sides of an otherwise symmetric junction. We propose that measuring the fluxes ensuing from these fields across two surfaces placed at the two sides of the junction would provide direct and noninvasive evidence of the transition from laminar to turbulent electron flow. The flux asymmetry is predicted to first increase, reach a maximum, and then decrease with increasing current, i.e., with increasing amount of turbulence.

  16. Magnetic Tunnel Junction Based Long-Term Short-Term Stochastic Synapse for a Spiking Neural Network with On-Chip STDP Learning

    Science.gov (United States)

    Srinivasan, Gopalakrishnan; Sengupta, Abhronil; Roy, Kaushik

    2016-01-01

    Spiking Neural Networks (SNNs) have emerged as a powerful neuromorphic computing paradigm to carry out classification and recognition tasks. Nevertheless, the general purpose computing platforms and the custom hardware architectures implemented using standard CMOS technology, have been unable to rival the power efficiency of the human brain. Hence, there is a need for novel nanoelectronic devices that can efficiently model the neurons and synapses constituting an SNN. In this work, we propose a heterostructure composed of a Magnetic Tunnel Junction (MTJ) and a heavy metal as a stochastic binary synapse. Synaptic plasticity is achieved by the stochastic switching of the MTJ conductance states, based on the temporal correlation between the spiking activities of the interconnecting neurons. Additionally, we present a significance driven long-term short-term stochastic synapse comprising two unique binary synaptic elements, in order to improve the synaptic learning efficiency. We demonstrate the efficacy of the proposed synaptic configurations and the stochastic learning algorithm on an SNN trained to classify handwritten digits from the MNIST dataset, using a device to system-level simulation framework. The power efficiency of the proposed neuromorphic system stems from the ultra-low programming energy of the spintronic synapses. PMID:27405788

  17. Magnetic Tunnel Junction Based Long-Term Short-Term Stochastic Synapse for a Spiking Neural Network with On-Chip STDP Learning

    Science.gov (United States)

    Srinivasan, Gopalakrishnan; Sengupta, Abhronil; Roy, Kaushik

    2016-07-01

    Spiking Neural Networks (SNNs) have emerged as a powerful neuromorphic computing paradigm to carry out classification and recognition tasks. Nevertheless, the general purpose computing platforms and the custom hardware architectures implemented using standard CMOS technology, have been unable to rival the power efficiency of the human brain. Hence, there is a need for novel nanoelectronic devices that can efficiently model the neurons and synapses constituting an SNN. In this work, we propose a heterostructure composed of a Magnetic Tunnel Junction (MTJ) and a heavy metal as a stochastic binary synapse. Synaptic plasticity is achieved by the stochastic switching of the MTJ conductance states, based on the temporal correlation between the spiking activities of the interconnecting neurons. Additionally, we present a significance driven long-term short-term stochastic synapse comprising two unique binary synaptic elements, in order to improve the synaptic learning efficiency. We demonstrate the efficacy of the proposed synaptic configurations and the stochastic learning algorithm on an SNN trained to classify handwritten digits from the MNIST dataset, using a device to system-level simulation framework. The power efficiency of the proposed neuromorphic system stems from the ultra-low programming energy of the spintronic synapses.

  18. Magnetic tunnel junctions with Co:TiO2 magnetic semiconductor electrodes

    NARCIS (Netherlands)

    Lee, Y.J.; Abhishek Kumar, A.K.; Kumar, A.; Vera Marun, I.J.; de Jong, Machiel Pieter; Jansen, R.

    2010-01-01

    Spin-polarized tunneling is investigated in magnetic tunnel junctions containing an ultrathin interfacial layer of Co:TiO2 magnetic semiconductor. The Co:TiO2 layers (0 to 1 nm thick) are inserted at the SrTiO3/Co interface in La0.67Sr0.33MnO3/SrTiO3/Co tunnel junctions. For all junctions we find a

  19. Magnetic Tunnel Junction as an On-Chip Temperature Sensor.

    Science.gov (United States)

    Sengupta, Abhronil; Liyanagedera, Chamika Mihiranga; Jung, Byunghoo; Roy, Kaushik

    2017-09-18

    Temperature sensors are becoming an increasingly important component in System-on-Chip (SoC) designs with increasing transistor scaling, power density and associated heating effects. This work explores a compact nanoelectronic temperature sensor based on a Magnetic Tunnel Junction (MTJ) structure. The MTJ switches probabilistically depending on the operating temperature in the presence of thermal noise. Performance evaluation of the proposed MTJ temperature sensor, based on experimentally measured device parameters, reveals that the sensor is able to achieve a conversion rate of 2.5K samples/s with energy consumption of 8.8 nJ per conversion (1-2 orders of magnitude lower than state-of-the-art CMOS sensors) for a linear sensing regime of 200-400 K.

  20. Characterization of Magnetic Tunnel Junctions For Spin Transfer Torque Magnetic Random Access Memory

    Science.gov (United States)

    Dill, Joshua Luchay

    This thesis details two experimental methods for quantifying magnetic tunnel junction behavior, namely write error rates and field modulated spin-torque ferromagnetic resonance. The former examines how reliably an applied spin-transfer torque can excite magnetization dynamics that lead to a reversal of magnetization direction while the latter studies steady state dynamics provided by an oscillating spin-transfer torque. These characterization techniques reveal write error rate behavior for a particular composition magnetic tunnel junction that qualitatively deviates from theoretical predictions. Possible origins of this phenomenon are also investigated with the field modulated spin-torque ferromagnetic resonance technique. By understanding the dynamics of magnetic moments predicted by theory, one can experimentally confirm or disprove these theories in order to accurately model and predict tunnel junction behavior. By having a better model for what factors are important in magnetization dynamics, one can optimize these factors in terms of improving magnetic tunnel junctions for their use as computer memory.

  1. Demonstration of the Potential of Magnetic Tunnel Junctions for a Universal RAM Technology

    Science.gov (United States)

    Gallagher, William J.

    2000-03-01

    Over the past four years, tunnel junctions with magnetic electrodes have emerged as promising devices for future magnetoresistive sensing and for information storage. This talk will review advances in these devices, focusing particularly on the use of magnetic tunnel junctions for magnetic random access memory (MRAM). Exchange-biased versions of magnetic tunnel junctions (MTJs) in particular will be shown to have useful properties for forming magnetic memory storage elements in a novel cross-point architecture. Exchange-biased MTJ elements have been made with areas as small as 0.1 square microns and have shown magnetoresistance values exceeding 40 The potential of exchange-biased MTJs for MRAM has been most seriously explored in a demonstration experiment involving the integration of 0.25 micron CMOS technology with a special magnetic tunnel junction "back end." The magnetic back end is based upon multi-layer magnetic tunnel junction growth technology which was developed using research-scale equipment and one-inch size substrates. For the demonstration, the CMOS wafers processed through two metal layers were cut into one-inch squares for depositions of bottom-pinned exchange-biased magnetic tunnel junctions. The samples were then processed through four additional lithographic levels to complete the circuits. The demonstration focused attention on a number of processing and device issues that were addressed successfully enough that key performance aspects of MTJ MRAM were demonstrated in 1 K bit arrays, including reads and writes in less than 10 ns and nonvolatility. While other key issues remain to be addressed, these results suggest that MTJ MRAM might simultaneously provide much of the functionality now provided separately by SRAM, DRAM, and NVRAM.

  2. Magnetic tunnel junctions with monolayer hexagonal boron nitride tunnel barriers

    Energy Technology Data Exchange (ETDEWEB)

    Piquemal-Banci, M.; Galceran, R.; Bouzehouane, K.; Anane, A.; Petroff, F.; Fert, A.; Dlubak, B.; Seneor, P. [Unité Mixte de Physique, CNRS, Thales, Univ. Paris-Sud, Université Paris-Saclay, Palaiseau 91767 (France); Caneva, S.; Martin, M.-B.; Weatherup, R. S.; Kidambi, P. R.; Robertson, J.; Hofmann, S. [Department of Engineering, University of Cambridge, Cambridge CB21PZ (United Kingdom); Xavier, S. [Thales Research and Technology, 1 avenue Augustin Fresnel, Palaiseau 91767 (France)

    2016-03-07

    We report on the integration of atomically thin 2D insulating hexagonal boron nitride (h-BN) tunnel barriers into Co/h-BN/Fe magnetic tunnel junctions (MTJs). The h-BN monolayer is directly grown by chemical vapor deposition on Fe. The Conductive Tip Atomic Force Microscopy (CT-AFM) measurements reveal the homogeneity of the tunnel behavior of our h-BN layers. As expected for tunneling, the resistance depends exponentially on the number of h-BN layers. The h-BN monolayer properties are also characterized through integration into complete MTJ devices. A Tunnel Magnetoresistance of up to 6% is observed for a MTJ based on a single atomically thin h-BN layer.

  3. Superpoissonian shot noise in organic magnetic tunnel junctions

    Energy Technology Data Exchange (ETDEWEB)

    Cascales, Juan Pedro; Martinez, Isidoro; Aliev, Farkhad G., E-mail: farkhad.aliev@uam.es [Dpto. Fisica Materia Condensada C3, Instituto Nicolas Cabrera (INC), Condensed Matter Physics Institute (IFIMAC), Universidad Autonoma de Madrid, Madrid 28049 (Spain); Hong, Jhen-Yong; Lin, Minn-Tsong, E-mail: mtlin@phys.ntu.edu.tw [Department of Physics, National Taiwan University, Taipei 10617, Taiwan and Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 10617, Taiwan (China); Szczepański, Tomasz; Dugaev, Vitalii K. [Department of Physics, Rzeszów University of Technology, al. Powstańców Warszawy 6, 35-959 Rzeszów (Poland); Barnaś, Józef [Faculty of Physics, Adam Mickiewicz University, ul. Umultowska 85, 61-614 Poznań, Poland and Institute of Molecular Physics, Polish Academy of Sciences, ul. Smoluchowskiego 17, 60-179 Poznań (Poland)

    2014-12-08

    Organic molecules have recently revolutionized ways to create new spintronic devices. Despite intense studies, the statistics of tunneling electrons through organic barriers remains unclear. Here, we investigate conductance and shot noise in magnetic tunnel junctions with 3,4,9,10-perylene-teracarboxylic dianhydride (PTCDA) barriers a few nm thick. For junctions in the electron tunneling regime, with magnetoresistance ratios between 10% and 40%, we observe superpoissonian shot noise. The Fano factor exceeds in 1.5–2 times the maximum values reported for magnetic tunnel junctions with inorganic barriers, indicating spin dependent bunching in tunneling. We explain our main findings in terms of a model which includes tunneling through a two level (or multilevel) system, originated from interfacial bonds of the PTCDA molecules. Our results suggest that interfaces play an important role in the control of shot noise when electrons tunnel through organic barriers.

  4. Switching current density reduction in perpendicular magnetic anisotropy spin transfer torque magnetic tunneling junctions

    Energy Technology Data Exchange (ETDEWEB)

    You, Chun-Yeol [Department of Physics, Inha University, Incheon 402-751 (Korea, Republic of)

    2014-01-28

    We investigate the switching current density reduction of perpendicular magnetic anisotropy spin transfer torque magnetic tunneling junctions using micromagnetic simulations. We find that the switching current density can be reduced with elongated lateral shapes of the magnetic tunnel junctions, and additional reduction can be achieved by using a noncollinear polarizer layer. The reduction is closely related to the details of spin configurations during switching processes with the additional in-plane anisotropy.

  5. Magnetic resonance imaging in craniovertebral junction anomaly

    Energy Technology Data Exchange (ETDEWEB)

    Tada, Shimpei; Hata, Yuichi; Miyamoto, Yukio

    1985-03-01

    Materials consisted of 6 cases with occipitalization of the atlas, (4 of them complicated by basilar impression), 7 with basilar impression, one with hypoplasia of the atlas and C2-3 fusion, and one with os odontoideum. Basal angles after Welcker were all more than 130 in contrast to 118-138 (127 an average) in control group. Basal angle more than 140 denoted platybasia. Syringomyelia was seen in 7 of all 15 cases and 4 of 5 cases with platybasia. Chiari malformation was seen in 9 of all 15 cases and 4 of 5 with platybasia. Basal angles were closely related to craniovertebral junction bone anomaly, syringomyelia, and Chiari malformation. (author).

  6. Magnetic tunnel junctions using Co/Pt multilayered free layers with perpendicular magnetic anisotropy

    Energy Technology Data Exchange (ETDEWEB)

    Machida, K; Funabashi, N; Aoshima, K; Kuga, K; Kikuchi, H; Shimidzu, N [Science and Technology Research Labs., Japan Broadcasting Corp. (NHK), 1-10-11 Kinuta, Setagaya-ku, Tokyo 157-8510 (Japan); Furukawa, K; Nakayama, T [Department of Electrical Engineering, Tokyo Denki University, 2-2 Kandanishikicho, Chiyoda-ku, Tokyo 101-8457 (Japan); Ishibashi, T, E-mail: machida.k-ge@nhk.or.jp [Department of Materials Science and Technology, Nagaoka University of Technology, 1603-1 Kamitomioka, Nagaoka, Niigata 940-2188 (Japan)

    2011-07-06

    Co/Pt multilayered films with perpendicular magnetic anisotropy have a large magneto-optical Kerr effect. To use the films with a submicron magneto-optical light modulator driven by spin transfer switching, we fabricated two types of magnetic tunnel junctions (MTJs) with Co/Pt multilayered films for the free layers. One is an fcc-based MTJ, another is a bcc-based MTJ with CoFeB/MgO/CoFeB junction. The fcc-based MTJ with a Ag buffer layer on the bottom electrode showed a large coercive force of the pinned layer, a large Kerr rotation angle of 0.3 degree in the free layer and a tunnel magnetoresistance (TMR) ratio of 3.8%. In the CoFeB/MgO/CoFeB junction, an X-ray diffraction pattern of an MgO layer showed a large MgO(002)-orientation. However, the TMR ratio was less than 3 %. An MTJ with a Ta buffer layer between the CoFeB layer and the Co/Pt multilayered films in the free layer was prepared. The Ta buffer was used to alleviate a lattice mismatch between bcc-CoFeB/MgO/CoFeB and fcc-Co/Pt multilayer. The peak intensity of the MgO(002)-orientation was increased up to 2 times. This result suggests that the crystalline texture of the bcc-CoFeB/MgO/CoFeB junction is strongly influenced by the fcc-Co/Pt multilayered films.

  7. Temperature increase due to Joule heating in a nanostructured MgO-based magnetic tunnel junction over a wide current-pulse range.

    Science.gov (United States)

    Jeong, Boram; Lim, Sang Ho

    2011-07-01

    The temperature increase due to Joule heating in a nanopillar of a magnetic tunnel junction sandwiched by top and bottom electrodes was calculated by the finite element method. The results for the critical condition for the current-induced magnetization switching measured over a wide current-pulse range were taken from the literature. At long pulse widths, the temperature increase was solely dependent on the magnitude of the critical current density. However, no saturation in the temperature increase occurred for short pulse widths. In this case, the temperature increase additionally depended on the pulse width, so that a broad maximum occurred in the pulse width (or the critical current density) dependence of the temperature increase. The original results for the critical condition were corrected by accounting for the temperature increase and these corrected results, together with the Slonczewski equation, were used to extract an accurate value for the thermal stability factor.

  8. Magnetic tunnel junctions using perpendicularly magnetized synthetic antiferromagnetic reference layer for wide-dynamic-range magnetic sensors

    Science.gov (United States)

    Nakano, T.; Oogane, M.; Furuichi, T.; Ando, Y.

    2017-01-01

    We developed CoFeB/MgO/CoFeB magnetic tunnel junctions (MTJs) with a perpendicularly magnetized synthetic antiferromagnetic (p-SAF) reference layer for magnetic sensor applications. The MTJs exhibited linear tunnel magnetoresistance curves to out-of-plane applied magnetic fields with dynamic ranges more than ±2.5 kOe, which are wider than those in CoFeB/MgO/CoFeB-MTJs reported to date. The performance metrics of MTJ sensors, i.e., sensitivity and nonlinearity, depend significantly on the anisotropy field of the free layer. We explained the dependences by a simple model based on the Stoner-Wohlfarth and Slonczewski models, which gives us a guideline to design the sensor performance metrics. These findings demonstrated that MTJs with a p-SAF reference layer are promising candidates for wide-dynamic-range magnetic sensors.

  9. The need for control of magnetic parameters for energy efficient performance of magnetic tunnel junctions

    Science.gov (United States)

    Farhat, I. A. H.; Gale, E.; Alpha, C.; Isakovic, A. F.

    2017-07-01

    Optimizing energy performance of Magnetic Tunnel Junctions (MTJs) is the key for embedding Spin Transfer Torque-Random Access Memory (STT-RAM) in low power circuits. Due to the complex interdependencies of the parameters and variables of the device operating energy, it is important to analyse parameters with most effective control of MTJ power. The impact of threshold current density, Jco , on the energy and the impact of HK on Jco are studied analytically, following the expressions that stem from Landau-Lifshitz-Gilbert-Slonczewski (LLGS-STT) model. In addition, the impact of other magnetic material parameters, such as Ms , and geometric parameters such as tfree and λ is discussed. Device modelling study was conducted to analyse the impact at the circuit level. Nano-magnetism simulation based on NMAGTM package was conducted to analyse the impact of controlling HK on the switching dynamics of the film.

  10. Failure Analysis in Magnetic Tunnel Junction Nanopillar with Interfacial Perpendicular Magnetic Anisotropy.

    Science.gov (United States)

    Zhao, Weisheng; Zhao, Xiaoxuan; Zhang, Boyu; Cao, Kaihua; Wang, Lezhi; Kang, Wang; Shi, Qian; Wang, Mengxing; Zhang, Yu; Wang, You; Peng, Shouzhong; Klein, Jacques-Olivier; de Barros Naviner, Lirida Alves; Ravelosona, Dafine

    2016-01-12

    Magnetic tunnel junction nanopillar with interfacial perpendicular magnetic anisotropy (PMA-MTJ) becomes a promising candidate to build up spin transfer torque magnetic random access memory (STT-MRAM) for the next generation of non-volatile memory as it features low spin transfer switching current, fast speed, high scalability, and easy integration into conventional complementary metal oxide semiconductor (CMOS) circuits. However, this device suffers from a number of failure issues, such as large process variation and tunneling barrier breakdown. The large process variation is an intrinsic issue for PMA-MTJ as it is based on the interfacial effects between ultra-thin films with few layers of atoms; the tunneling barrier breakdown is due to the requirement of an ultra-thin tunneling barrier (e.g., MTJ and present some eventual solutions from device fabrication to system level integration to optimize the failure issues.

  11. Magnetostatic effects on switching in small magnetic tunnel junctions

    Energy Technology Data Exchange (ETDEWEB)

    Bapna, Mukund; Piotrowski, Stephan K.; Oberdick, Samuel D.; Majetich, Sara A., E-mail: sara@cmu.edu [Physics Department, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213 (United States); Li, Mingen; Chien, C.-L. [Department of Physics and Astronomy, Johns Hopkins University, Baltimore, Maryland 21218 (United States)

    2016-01-11

    Perpendicular CoFeB/MgO/CoFeB magnetic tunnel junctions with diameters under 100 nm are investigated by conductive atomic force microscopy. Minor loops of the tunnel magnetoresistance as a function of applied magnetic field reveal the hysteresis of the soft layer and an offset due to the magnetostatic field of the hard layer. Within the hysteretic region, telegraph noise is observed in the tunnel current. Simulations show that in this range, the net magnetic field in the soft layer is spatially inhomogeneous, and that antiparallel to parallel switching tends to start near the edge, while parallel to antiparallel reversal favors nucleation in the interior of the soft layer. As the diameter of the tunnel junction is decreased, the average magnitude of the magnetostatic field increases, but the spatial inhomogeneity across the soft layer is reduced.

  12. Magnetic Tunnel Junctions Incorporating a Near-Zero-Moment Ferromagnetic Semiconductor

    Science.gov (United States)

    Warring, H.; Trodahl, H. J.; Plank, N. O. V.; Natali, F.; Granville, S.; Ruck, B. J.

    2016-10-01

    We present a fully semiconductor-based magnetic tunnel junction that uses spin-orbit coupled materials made of intrinsic ferromagnetic semiconductors. Unlike more common approaches, one of the electrodes consists of a near-zero magnetic-moment ferromagnetic semiconductor, samarium nitride, with the other electrode composed of the more conventional ferromagnetic semiconductor gadolinium nitride. Fabricated tunnel junctions show a magnetoresistance as high as 200%, implying strong spin polarization in both electrodes. In contrast to conventional tunnel junctions, the resistance is largest at high fields, a direct result of the orbital-dominant magnetization in samarium nitride that requires that the spin in this electrode must align opposite to that in the gadolinium nitride when the magnetization is saturated. The magnetoresistance at intermediate fields is controlled by the formation of a twisted magnetization phase in the samarium nitride, a direct result of the orbital-dominant ferromagnetism. Thus, an alternative type of functionality can be brought to magnetic tunnel junctions by the use of different electrode materials, in contrast to the usual focus on tuning the barrier properties.

  13. Switching Properties of sub-100 nm Perpendicular Magnetic Tunnel Junctions

    Science.gov (United States)

    Tryputen, Larysa; Piotrowski, Stephan; Bapna, Mukund; Chien, Chia-Ling; Wang, Weigang; Majetich, Sara; Ross, Caroline

    2015-03-01

    Perpendicular magnetic tunnel junctions (p-MTJs) have great potential for realizing high-density non-volatile memory and logic devices. It is critical to solve scalability problem to implement such devices, to achieve low resistance area and to reduce switching current density while maintaining thermal stability. We present our recent results on fabrication of high resolution Ta/CoFeB/MgO/CoFeB/Ta p-MTJ devices and characterization of their switching properties as well as topography and current mapping by using nanoscale Conductive Atomic Force Microscopy. Our patterning method is based on using hydrogen silsesquioxane resist mask combined with ion beam etching. It allows to fabricate p-MTJ devices down to 40 nm in diameter while maintaining the magnetic quality of the multilayers. Repeatable, consistent switching behaviour has been observed in the obtained p-MTJ devices of 500 nm down to 40 nm with 10 - 800 mV voltage applied. Switching field increased as device diameter decreased, from 580 Oe at 500 nm (MR = 10%) to 410 Oe at 80 nm (MR = 9%). We discuss the effect of device sizes on the switching properties. This work was supported in part by C-SPIN, one of the six centers of STARnet, a Semiconductor Research Corporation Program sponsored by MARCO and DARPA and in part through the National Science Foundation through NCN-Needs Program, Contract 12207020-EEC.

  14. Neural coding using telegraphic switching of magnetic tunnel junction

    Energy Technology Data Exchange (ETDEWEB)

    Suh, Dong Ik; Bae, Gi Yoon; Oh, Heong Sik; Park, Wanjun, E-mail: wanjun@hanyang.ac.kr [Department of Electronic Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of)

    2015-05-07

    In this work, we present a synaptic transmission representing neural coding with spike trains by using a magnetic tunnel junction (MTJ). Telegraphic switching generates an artificial neural signal with both the applied magnetic field and the spin-transfer torque that act as conflicting inputs for modulating the number of spikes in spike trains. The spiking probability is observed to be weighted with modulation between 27.6% and 99.8% by varying the amplitude of the voltage input or the external magnetic field. With a combination of the reverse coding scheme and the synaptic characteristic of MTJ, an artificial function for the synaptic transmission is achieved.

  15. Resonant tunnel magnetoresistance in a double magnetic tunnel junction

    KAUST Repository

    Useinov, Arthur

    2011-08-09

    We present quasi-classical approach to calculate a spin-dependent current and tunnel magnetoresistance (TMR) in double magnetic tunnel junctions (DMTJ) FML/I/FMW/I/FMR, where the magnetization of the middle ferromagnetic metal layer FMW can be aligned parallel or antiparallel with respect to the fixed magnetizations of the left FML and right FMR ferromagnetic electrodes. The transmission coefficients for components of the spin-dependent current, and TMR are calculated as a function of the applied voltage. As a result, we found a high resonant TMR. Thus, DMTJ can serve as highly effective magnetic nanosensor for biological applications, or as magnetic memory cells by switching the magnetization of the inner ferromagnetic layer FMW.© Springer Science+Business Media, LLC 2011.

  16. Effect of Mo capping layers thickness on the perpendicular magnetic anisotropy in MgO/CoFeB based top magnetic tunnel junction structure

    Science.gov (United States)

    Liu, Yi; Zhu, Kai-Gui; Zhong, Hui-Cai; Zhu, Zheng-Yong; Yu, Tao; Ma, Su-De

    2016-11-01

    A detailed study of the magnetic characterizations of the top structure MgO/CoFeB/Mo is presented. The samples show strong perpendicular magnetic anisotropy (PMA) when the thickness of CoFeB is 0.9 nm and 1.1 nm. The saturation magnetic moment and interface anisotropy constant are 1566 emu/cm3 and 3.75 erg/cm2, respectively. The magnetic dead layer (MDL) is about 0.23 nm in this system. Furthermore, strong capping layer thickness dependence is also observed. The strong PMA of 1.1 nm CoFeB only exists in a Mo cap layer thickness window of 1.2-2 nm. To maintain PMA, the metal layer could not be too thin or thick in these multilayers. The oxidation and diffusion of the metal capping layer should be respectively responsibility for the degradation of PMA in these thin or thick metal capping layer samples. Project supported by the National Fundamental Research Program of China (Grant No. 2011CB921804) and Beijing Key Subject Foundation of Condensed Matter Physics, China (Grant No. 0114023).

  17. Fabrication of a magnetic-tunnel-junction-based nonvolatile logic-in-memory LSI with content-aware write error masking scheme achieving 92% storage capacity and 79% power reduction

    Science.gov (United States)

    Natsui, Masanori; Tamakoshi, Akira; Endoh, Tetsuo; Ohno, Hideo; Hanyu, Takahiro

    2017-04-01

    A magnetic-tunnel-junction (MTJ)-based video coding hardware with an MTJ-write-error-rate relaxation scheme as well as a nonvolatile storage capacity reduction technique is designed and fabricated in a 90 nm MOS and 75 nm perpendicular MTJ process. The proposed MTJ-oriented dynamic error masking scheme suppresses the effect of write operation errors on the operation result of LSI, which results in the increase in an acceptable MTJ write error rate up to 7.8 times with less than 6% area overhead, while achieving 79% power reduction compared with that of the static-random-access-memory-based one.

  18. Negative tunnelling magnetoresistance in spin filtering magnetic junctions with spin-orbit coupling

    Institute of Scientific and Technical Information of China (English)

    Li Yun

    2011-01-01

    We present theoretical calculations of spin transport in spin filtering magnetic tunnelling junctions based on the Landauer-Büttiker formalism and taking into account the spin-orbit coupling (SOC). It is shown that spin-flip scattering induced by SOC is stronger in parallel alignment of magnetization of the ferromegnet barrier (FB) and the ferromagnetic electrode than that in antiparallel case. The increase of negative tunnelling magnetoresistance with bias is in agreement with recent experimental observation.

  19. Flexible MgO Barrier Magnetic Tunnel Junctions.

    Science.gov (United States)

    Loong, Li Ming; Lee, Wonho; Qiu, Xuepeng; Yang, Ping; Kawai, Hiroyo; Saeys, Mark; Ahn, Jong-Hyun; Yang, Hyunsoo

    2016-07-01

    Flexible MgO barrier magnetic tunnel junction (MTJ) devices are fabricated using a transfer printing process. The flexible MTJ devices yield significantly enhanced tunneling magnetoresistance of ≈300% and improved abruptness of switching, as residual strain in the MTJ structure is released during the transfer process. This approach could be useful for flexible electronic systems that require high-performance memory components. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  20. Field-like spin torque in magnetic tunnel junctions

    Energy Technology Data Exchange (ETDEWEB)

    Tang, Y-H; Kioussis, N; Kalitsov, A [Department of Physics, California State University, Northridge, CA 91330-8268 (United States); Butler, W H [MINT Center, University of Alabama, P. O. Box 870209, Tuscaloosa, AL (United States); Car, R, E-mail: nick.kioussis@csun.ed [Department of Chemistry, Princeton University, Princeton, New Jersey 08544-0001 (United States)

    2010-01-01

    We show that the exchange splitting asymmetry between the left and right ferromagnetic leads in non-collinear magnetic tunnel junctions (MTJ) tunes the bias behavior of the field-like spin torque, T{sub p}erpendicular. These results can be understood by our recently derived general expression, which relates the non-collinear T{sub p}erpendicular to the algebraic sum of four independent non-equilibrium interlayer exchange couplings (IEC) solely in collinear configurations.

  1. Backhopping in magnetic tunnel junctions: Micromagnetic approach and experiment

    Energy Technology Data Exchange (ETDEWEB)

    Frankowski, Marek, E-mail: wsong@unb.ca; Skowroński, Witold; Czapkiewicz, Maciej; Stobiecki, Tomasz

    2015-01-15

    Micromagnetic simulations of Current Induced Magnetization Switching (CIMS) loops in CoFeB/MgO/CoFeB exchange-biased Magnetic Tunnel Junctions (MTJ) are discussed. Our model uses the Landau–Lifshitz–Gilbert equation with the Slonczewski's Spin-Transfer-Torque (STT) component. The current density for STT is calculated from the applied bias voltage and tunnel magnetoresistance which depends on the local magnetization vectors arrangement. We take into account the change in the anti-parallel state resistance with increasing bias voltage. Using such model we investigate influence of the interlayer exchange coupling, between free and reference layers across the barrier, on the backhopping effect in anti-parallel to parallel switching. We compare our simulated CIMS loops with the experimental data obtained from MTJs with different MgO barrier thicknesses. - Highlights: • We model Current Induced Magnetization Switching in magnetic tunnel junctions. • We investigate interlayer exchange coupling influence on backhopping effect. • Experimental results are reproduced with good qualitative agreement. • Ferromagnetic coupling decreases backhopping occurrence probability.

  2. Time scales of bias voltage effects in FE/MgO-based magnetic tunnel junctions with voltage-dependent perpendicular anisotropy

    Energy Technology Data Exchange (ETDEWEB)

    Lytvynenko, Ia.M. [Sumy State University, 2, Rimskogo-Korsakova Str., 40007 Sumy (Ukraine); Hauet, T., E-mail: thomas.hauet@univ-lorraine.fr [Institut Jean Lamour, UMR CNRS 7198, Université de Lorraine, 54506 Vandoeuvre les Nancy (France); Montaigne, F. [Institut Jean Lamour, UMR CNRS 7198, Université de Lorraine, 54506 Vandoeuvre les Nancy (France); Bibyk, V.V. [Sumy State University, 2, Rimskogo-Korsakova Str., 40007 Sumy (Ukraine); Andrieu, S. [Institut Jean Lamour, UMR CNRS 7198, Université de Lorraine, 54506 Vandoeuvre les Nancy (France)

    2015-12-15

    Interplay between voltage-induced magnetic anisotropy transition and voltage-induced atomic diffusion is studied in epitaxial V/Fe (0.7 nm)/ MgO/ Fe(5 nm)/Co/Au magnetic tunnel junction where thin Fe soft electrode has in-plane or out-of-plane anisotropy depending on the sign of the bias voltage. We investigate the origin of the slow resistance variation occurring when switching bias voltage in opposite polarity. We demonstrate that the time to reach resistance stability after voltage switching is reduced when increasing the voltage amplitude or the temperature. A single energy barrier of about 0.2 eV height is deduced from temperature dependence. Finally, we demonstrate that the resistance change is not correlated to a change in soft electrode anisotropy. This conclusion contrasts with observations recently reported on analogous systems. - Highlights: • Voltage-induced time dependence of resistance is studied in epitaxial Fe/MgO/Fe. • Resistance change is not related to the bottom Fe/MgO interface. • The effect is thermally activated with an energy barrier of the order of 0.2 eV height.

  3. The study of origin of interfacial perpendicular magnetic anisotropy in ultra-thin CoFeB layer on the top of MgO based magnetic tunnel junction

    Science.gov (United States)

    Li, Zhi-Peng; Li, Shaoping; Zheng, Yuankai; Fang, Jason; Chen, Lifan; Hong, Liang; Wang, Haifeng

    2016-10-01

    A comprehensive microstructure study has been conducted experimentally for identifying the origin or mechanism of perpendicular magnetic anisotropy (PMA) in the ultra-thin (10 Å) CoFeB layer on the top of magnetic tunnel junction (MTJ). The high resolution transmission electron microscopy reveals that the feature of crystal structure in 10 Å-CoFeB layer is localized in nature at the CoFeB-MgO interface. On the other hand, the strain-relaxed crystalline structure is observed in the thick CoFeB (20 Å) layer at the CoFeB-MgO interface, associated with a series of dislocation formations. The electron energy loss spectroscopy further suggests that the local chemical stoichiometry of the ultra-thin 10 Å-CoFeB layer is notably changed at the CoFeB-MgO interface, compared with an atomic stoichiometry in a thick 20 Å-CoFeB layer. The origin of PMA mechanism is therefore identified experimentally as an interface effect, which can be attributed to a change of local atom bonding or lattice constant of the transition metal at the CoFeB-MgO based MTJ interface. Furthermore, such a local interfacial atom bonding change is seemly induced by the localized anisotropic strain and consistent with previous theoretical speculations and calculations. The observed experimental findings provide some perspective on microstructure and chemistry on PMA in ultra-thin CoFeB film at the MTJ interface, then deepening our understanding of the mechanism of PMA within MTJ stack and thus facilitating advancement for emerging spintronics technology.

  4. Voltage-induced magnetization dynamics in CoFeB/MgO/CoFeB magnetic tunnel junctions

    Science.gov (United States)

    Miura, Katsuya; Yabuuchi, Shin; Yamada, Masaki; Ichimura, Masahiko; Rana, Bivas; Ogawa, Susumu; Takahashi, Hiromasa; Fukuma, Yasuhiro; Otani, Yoshichika

    2017-01-01

    Recent progress in magnetic tunnel junctions (MTJs) with a perpendicular easy axis consisting of CoFeB and MgO stacking structures has shown that magnetization dynamics are induced due to voltage-controlled magnetic anisotropy (VCMA), which will potentially lead to future low-power-consumption information technology. For manipulating magnetizations in MTJs by applying voltage, it is necessary to understand the coupled magnetization motion of two magnetic (recording and reference) layers. In this report, we focus on the magnetization motion of two magnetic layers in MTJs consisting of top layers with an in-plane easy axis and bottom layers with a perpendicular easy axis, both having perpendicular magnetic anisotropy. According to rectified voltage (Vrec) measurements, the amplitude of the magnetization motion depends on the initial angles of the magnetizations with respect to the VCMA direction. Our numerical simulations involving the micromagnetic method based on the Landau-Lifshitz-Gilbert equation of motion indicate that the magnetization motion in both layers is induced by a combination of VCMA and transferred angular momentum, even though the magnetic easy axes of the two layers are different. Our study will lead to the development of voltage-controlled MTJs having perpendicular magnetic anisotropy by controlling the initial angle between magnetizations and VCMA directions. PMID:28209976

  5. Voltage-induced magnetization dynamics in CoFeB/MgO/CoFeB magnetic tunnel junctions

    Science.gov (United States)

    Miura, Katsuya; Yabuuchi, Shin; Yamada, Masaki; Ichimura, Masahiko; Rana, Bivas; Ogawa, Susumu; Takahashi, Hiromasa; Fukuma, Yasuhiro; Otani, Yoshichika

    2017-02-01

    Recent progress in magnetic tunnel junctions (MTJs) with a perpendicular easy axis consisting of CoFeB and MgO stacking structures has shown that magnetization dynamics are induced due to voltage-controlled magnetic anisotropy (VCMA), which will potentially lead to future low-power-consumption information technology. For manipulating magnetizations in MTJs by applying voltage, it is necessary to understand the coupled magnetization motion of two magnetic (recording and reference) layers. In this report, we focus on the magnetization motion of two magnetic layers in MTJs consisting of top layers with an in-plane easy axis and bottom layers with a perpendicular easy axis, both having perpendicular magnetic anisotropy. According to rectified voltage (Vrec) measurements, the amplitude of the magnetization motion depends on the initial angles of the magnetizations with respect to the VCMA direction. Our numerical simulations involving the micromagnetic method based on the Landau-Lifshitz-Gilbert equation of motion indicate that the magnetization motion in both layers is induced by a combination of VCMA and transferred angular momentum, even though the magnetic easy axes of the two layers are different. Our study will lead to the development of voltage-controlled MTJs having perpendicular magnetic anisotropy by controlling the initial angle between magnetizations and VCMA directions.

  6. Minimization of the energy costs for operating magnetic tunnel junctions

    Science.gov (United States)

    Farhat, Ilyas A. H.; Gale, E.; Isakovic, A. F.

    2015-03-01

    Increasing prospects of utilizing the STT-MRAM calls for the re-assessment of the overall energy (power) cost of operating magnetic tunnel junctions and related elements. This motivates our design, nanofabrication and characterization of simple tri-layer magnetic tunnel junctions which show measurable decrease in the operating energy cost. The MTJs we report about rely on nanoengineering interfaces between the insulating and magnetic layers in such a way that the area of the hysteresis loops can be controlled in one or both magnetic layers. Our TMR coefficient ranges from 45% to 130%, depending on the MTJ layer materials, and can be anticipated to be further increased. We also report the study of the TMR dependence on the RA product, as an important interface parameter. Lastly, we present an analysis of MTJ parameters affected by our approach and a perspective on further improvements, focusing on the device design parameters relevant for the integration of this type of MTJs. This work is supported by the SRC-ATIC Grant 2012-VJ-2335. A part of this work is being performed at Cornell University CNF, a member of NNIN. We thank CNF staff for the support.

  7. Tailoring the properties of a magnetic tunnel junction to be used as a magnetic field sensor

    OpenAIRE

    Nguyen, Hugo; Persson, Anders

    2011-01-01

    A magnetic tunnel junction (MTJ) can be used as an effective magnetic field sensor thank to its high magnetoresistance ratio. To be used as a magnetic field sensor in different applications, the possibility of tuning the performance of the MTJ is important. Different means of tuning, such as voltage and magnetic field biasing, can be used. In this work, an external magnetic field from a permanent magnet was used to bias the sensing layer of a MTJ along its hard axis, and the effect of the bia...

  8. Spin-valley filter and tunnel magnetoresistance in asymmetrical silicene magnetic tunnel junctions

    Science.gov (United States)

    Wang, Dali; Huang, Zeyuan; Zhang, Yongyou; Jin, Guojun

    2016-05-01

    The spin and valley transports and tunnel magnetoresistance are studied in a silicene-based asymmetrical magnetic tunnel junction consisting of a ferromagnetic tunnel barrier, sandwiched between a ferromagnetic electrode and a normal electrode. For such an asymmetrical silicene junction, a general formulism is established. The numerical results show that the spin-valley resolved conductances strongly depend on the magnetization orientation of the ferromagnetic tunnel barrier, and the fully spin-valley polarized current can be realized by tuning a perpendicularly applied electric field. We also find that the tunnel magnetoresistance in this case can be effectively modified by the external electric field when the conductance is fully spin-valley polarized. In particular, the exchange field in the ferromagnetic electrode can further substantially enhance the tunnel magnetoresistance of the system. Our work provides a practical method for electric and magnetic manipulation of valley/spin polarization and tunnel magnetoresistance.

  9. Polyphosphonium-based ion bipolar junction transistors.

    Science.gov (United States)

    Gabrielsson, Erik O; Tybrandt, Klas; Berggren, Magnus

    2014-11-01

    Advancements in the field of electronics during the past few decades have inspired the use of transistors in a diversity of research fields, including biology and medicine. However, signals in living organisms are not only carried by electrons but also through fluxes of ions and biomolecules. Thus, in order to implement the transistor functionality to control biological signals, devices that can modulate currents of ions and biomolecules, i.e., ionic transistors and diodes, are needed. One successful approach for modulation of ionic currents is to use oppositely charged ion-selective membranes to form so called ion bipolar junction transistors (IBJTs). Unfortunately, overall IBJT device performance has been hindered due to the typical low mobility of ions, large geometries of the ion bipolar junction materials, and the possibility of electric field enhanced (EFE) water dissociation in the junction. Here, we introduce a novel polyphosphonium-based anion-selective material into npn-type IBJTs. The new material does not show EFE water dissociation and therefore allows for a reduction of junction length down to 2 μm, which significantly improves the switching performance of the ion transistor to 2 s. The presented improvement in speed as well the simplified design will be useful for future development of advanced iontronic circuits employing IBJTs, for example, addressable drug-delivery devices.

  10. Magnetic tunnel junctions with non-collinear anisotropy axes for sensor applications

    CERN Document Server

    Grigorenko, A N

    2003-01-01

    Magnetic tunnel junctions (MTJ) with non-collinear anisotropy axes of magnetic layers have been fabricated for reading head and sensor applications. It is shown that crossed anisotropies of magnetic layers improve sensor sensitivity and time-response compared to the conventional case of aligned anisotropies. The developed micromagnetic model is in good agreement with magnetoresistive properties of fabricated junctions.

  11. Spin-wave thermal population as temperature probe in magnetic tunnel junctions

    Energy Technology Data Exchange (ETDEWEB)

    Le Goff, A., E-mail: adrien.le-goff@u-psud.fr; Devolder, T. [Institut d' Electronique Fondamentale, CNRS, Univ. Paris-Sud, Université Paris-Saclay, 91405 Orsay (France); Nikitin, V. [SAMSUNG Electronics Corporation, 601 McCarthy Blvd Milpitas, California 95035 (United States)

    2016-07-14

    We study whether a direct measurement of the absolute temperature of a Magnetic Tunnel Junction (MTJ) can be performed using the high frequency electrical noise that it delivers under a finite voltage bias. Our method includes quasi-static hysteresis loop measurements of the MTJ, together with the field-dependence of its spin wave noise spectra. We rely on an analytical modeling of the spectra by assuming independent fluctuations of the different sub-systems of the tunnel junction that are described as macrospin fluctuators. We illustrate our method on perpendicularly magnetized MgO-based MTJs patterned in 50 × 100 nm{sup 2} nanopillars. We apply hard axis (in-plane) fields to let the magnetic thermal fluctuations yield finite conductance fluctuations of the MTJ. Instead of the free layer fluctuations that are observed to be affected by both spin-torque and temperature, we use the magnetization fluctuations of the sole reference layers. Their much stronger anisotropy and their much heavier damping render them essentially immune to spin-torque. We illustrate our method by determining current-induced heating of the perpendicularly magnetized tunnel junction at voltages similar to those used in spin-torque memory applications. The absolute temperature can be deduced with a precision of ±60 K, and we can exclude any substantial heating at the spin-torque switching voltage.

  12. Anisotropic magnetotransport in Dirac-Weyl magnetic junctions

    Science.gov (United States)

    Ominato, Yuya; Kobayashi, Koji; Nomura, Kentaro

    2017-02-01

    We theoretically study the anisotropic magnetotransport in Dirac-Weyl magnetic junctions where a doped ferromagnetic Weyl semimetal is sandwiched between doped Dirac semimetals. We calculate the conductance using the Landauer formula and find that the system exhibits extraordinarily large anisotropic magnetoresistance (AMR). The AMR depends on the ratio of the Fermi energy to the strength of the exchange interaction. The origin of the AMR is the shift of the Fermi surface in the Weyl semimetal, and the mechanism is completely different from the conventional AMR originating from the spin dependent scattering and the spin-orbit interaction.

  13. Spin transfer torque with spin diffusion in magnetic tunnel junctions

    KAUST Repository

    Manchon, Aurelien

    2012-08-09

    Spin transport in magnetic tunnel junctions in the presence of spin diffusion is considered theoretically. Combining ballistic tunneling across the barrier and diffusive transport in the electrodes, we solve the spin dynamics equation in the metallic layers. We show that spin diffusion mixes the transverse spin current components and dramatically modifies the bias dependence of the effective spin transfer torque. This leads to a significant linear bias dependence of the out-of-plane torque, as well as a nonconventional thickness dependence of both spin torque components.

  14. X-ray absorption and magnetic circular dichroism studies of Co2FeAl in magnetic tunnel junctions

    Energy Technology Data Exchange (ETDEWEB)

    Ebke, D.; Kugler, Z.; Thomas, P.; Schebaum, O.; Schafers, M.; Nissen, D.; Schmalhorst, J.; Hutten, A.; Arenholz, E.; Thomas, A.

    2010-01-11

    The bulk magnetic moment and the element specific magnetic moment of Co{sub 2}FeAl thin films were examined as a function of annealing temperature by alternating gradient magnetometer (AGM) and X-ray absorption spectroscopy (XAS)/X-ray magnetic circular dichroism (XMCD), respectively. A high magnetic moment can be achieved for all annealing temperatures and the predicted bulk and interface magnetic moment of about 5 {tilde A}{sub B} are reached via heating. We will also present tunnel magnetoresistance (TMR) values of up to 153% at room temperature and 260% at 13 K for MgO based magnetic tunnel junctions (MTJs) with Co{sub 2}FeAl and Co-Fe electrodes.

  15. Simulation of electric-field and spin-transfer-torque induced magnetization switching in perpendicular magnetic tunnel junctions

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Xiangli; Zhang, Zongzhi, E-mail: zzzhang@fudan.edu.cn [Department of Optical Science and Engineering, Shanghai Ultra-Precision Optical Engineering Center, Fudan University, Shanghai 200433 (China); Liu, Yaowen [School of Physical Science and Engineering, Tongji University, Shanghai 200092 (China); Jin, Q. Y. [State Key Laboratory of Precision Spectroscopy and Department of Physics, East China Normal University, Shanghai 200062 (China)

    2015-05-07

    Macrospin simulations are performed to model the magnetization switching driven by the combined action of electric-field and spin-polarized electric current (spin-transfer torque; STT) in MgO/CoFeB based magnetic tunnel junctions with interfacial perpendicular magnetic anisotropy. The results indicate that at low current case, the free layer magnetization shows a fast toggle-like switching, the final parallel or antiparallel magnetization state is determined by the electric-field effect, and the STT just helps or resists it to reach the final state depending on the current direction. However, with the increase of current strength, the contribution of STT effect gradually increases, which eventually achieves a deterministic magnetization switching state. Simulations further demonstrate that by appropriately tuning the parameters of applied electric-field and current the power consumption can be easily reduced by two orders of magnitude.

  16. Nonequilibrium green function approach to elastic and inelastic spin-charge transport in topological insulator-based heterostructures and magnetic tunnel junctions

    Science.gov (United States)

    Mahfouzi, Farzad

    Current and future technological needs increasingly motivate the intensive scientific research of the properties of materials at the nano-scale. One of the most important domains in this respect at present concerns nano-electronics and its diverse applications. The great interest in this domain arises from the potential reduction of the size of the circuit components, maintaining their quality and functionality, and aiming at greater efficiency, economy, and storage characteristics for the corresponding physical devices. The aim of this thesis is to present a contribution to the analysis of the electronic charge and spin transport phenomena that occur at the quantum level in nano-structures. This thesis spans the areas of quantum transport theory through time-dependent systems, electron-boson interacting systems and systems of interest to spintronics. A common thread in the thesis is to develop the theoretical foundations and computational algorithms to numerically simulate such systems. In order to optimize the numerical calculations I resort to different techniques (such as graph theory in finding inverse of a sparse matrix, adaptive grids for integrations and programming languages (e.g., MATLAB and C++) and distributed computing tools (MPI, CUDA). Outline of the Thesis: After giving an introduction to the topics covered in this thesis in Chapter 1, I present the theoretical foundations to the field of non-equilibrium quantum statistics in Chapter 2. The applications of this formalism and the results are covered in the subsequent chapters as follows: Spin and charge quantum pumping in time-dependent systems: Covered in Chapters 3, 4 and 5, this topics was initially motivated by experiments on measuring voltage signal from a magnetic tunnel junction (MTJ) exposed to a microwave radiation in ferromagnetic resonance (FMR) condition. In Chapter 3 we found a possible explanation for the finite voltage signal measured from a tunnel junction consisting of only a single

  17. HfO2 and SiO2 as barriers in magnetic tunneling junctions

    Science.gov (United States)

    Shukla, Gokaran; Archer, Thomas; Sanvito, Stefano

    2017-05-01

    SiO2 and HfO2 are both high-k, wide-gap semiconductors, currently used in the microelectronic industry as gate barriers. Here we investigate whether the same materials can be employed to make magnetic tunnel junctions, which in principle can be amenable for integration in conventional Si technology. By using a combination of density functional theory and the nonequilibrium Green's functions method for quantum transport we have studied the transport properties of Co [0001 ] /SiO2[001 ] /Co [0001 ] and Fe [001 ] /HfO2[001 ] /Fe [001 ] junctions. In both cases we found a quite large magnetoresistance, which is explained through the analysis of the real band structure of the magnets and the complex one of the insulator. We find that there is no symmetry spin filtering for the Co-based junction since the high transmission Δ2' band crosses the Fermi level, EF, for both spin directions. However, the fact that Co is a strong ferromagnet makes the orbital contribution to the two Δ2' spin subbands different, yielding magnetoresistance. In contrast for the Fe-based junction symmetry filtering is active for an energy window spanning between the Fermi level and 1 eV below EF, with Δ1 symmetry contributing to the transmission.

  18. Giant thermal spin-torque-assisted magnetic tunnel junction switching.

    Science.gov (United States)

    Pushp, Aakash; Phung, Timothy; Rettner, Charles; Hughes, Brian P; Yang, See-Hun; Parkin, Stuart S P

    2015-05-26

    Spin-polarized charge currents induce magnetic tunnel junction (MTJ) switching by virtue of spin-transfer torque (STT). Recently, by taking advantage of the spin-dependent thermoelectric properties of magnetic materials, novel means of generating spin currents from temperature gradients, and their associated thermal-spin torques (TSTs), have been proposed, but so far these TSTs have not been large enough to influence MTJ switching. Here we demonstrate significant TSTs in MTJs by generating large temperature gradients across ultrathin MgO tunnel barriers that considerably affect the switching fields of the MTJ. We attribute the origin of the TST to an asymmetry of the tunneling conductance across the zero-bias voltage of the MTJ. Remarkably, we estimate through magneto-Seebeck voltage measurements that the charge currents that would be generated due to the temperature gradient would give rise to STT that is a thousand times too small to account for the changes in switching fields that we observe.

  19. Three-dimensional integration technology of magnetic tunnel junctions for magnetoresistive random access memory application

    Science.gov (United States)

    Yakushiji, Kay; Takagi, Hideki; Watanabe, Naoya; Fukushima, Akio; Kikuchi, Katsuya; Kurashima, Yuuichi; Sugihara, Atsushi; Kubota, Hitoshi; Yuasa, Shinji

    2017-06-01

    Three-dimensional integration processes (based on direct wafer bonding and back-surface silicon removal) for magnetic tunnel junctions with perpendicular magnetization (p-MTJs) were developed. Perfect wafer bonding, namely, bonding without interfacial voids, and damageless silicon removal were successfully demonstrated by using very flat tantalum cap layers. Moreover, p-MTJ nanopillars subjected to these processes exhibited no degradation in magnetoresistance or spin-transfer-torque (STT) switching. Magnetoresistive random access memory (MRAM) technology incorporating these processes (direct wafer bonding and back-surface silicon removal) will make it possible to integrate epitaxial MTJs (with a single-crystal tunnel barrier) and ferromagnetic electrode layers (based on new materials).

  20. Spin-Polarization in Quasi-Magnetic Tunnel Junctions

    Science.gov (United States)

    Xie, Zheng-Wei; Li, Ling

    2017-05-01

    Spin polarization in ferromagnetic metal/insulator/spin-filter barrier/nonmagnetic metal, referred to as quasi-magnetic tunnel junctions, is studied within the free-electron model. Our results show that large positive or negative spin-polarization can be obtained at high bias in quasi-magnetic tunnel junctions, and within large bias variation regions, the degree of spin-polarization can be linearly tuned by bias. These linear variation regions of spin-polarization with bias are influenced by the barrier thicknesses, barrier heights and molecular fields in the spin-filter (SF) layer. Among them, the variations of thickness and heights of the insulating and SF barrier layers have influence on the value of spin-polarization and the linear variation regions of spin-polarization with bias. However, the variations of molecular field in the SF layer only have influence on the values of the spin-polarization and the influences on the linear variation regions of spin-polarization with bias are slight. Supported by the Key Natural Science Fund of Sichuan Province Education Department under Grant Nos 13ZA0149 and 16ZA0047, and the Construction Plan for Scientific Research Innovation Team of Universities in Sichuan Province under Grant No 12TD008.

  1. Failure Analysis in Magnetic Tunnel Junction Nanopillar with Interfacial Perpendicular Magnetic Anisotropy

    Directory of Open Access Journals (Sweden)

    Weisheng Zhao

    2016-01-01

    Full Text Available Magnetic tunnel junction nanopillar with interfacial perpendicular magnetic anisotropy (PMA-MTJ becomes a promising candidate to build up spin transfer torque magnetic random access memory (STT-MRAM for the next generation of non-volatile memory as it features low spin transfer switching current, fast speed, high scalability, and easy integration into conventional complementary metal oxide semiconductor (CMOS circuits. However, this device suffers from a number of failure issues, such as large process variation and tunneling barrier breakdown. The large process variation is an intrinsic issue for PMA-MTJ as it is based on the interfacial effects between ultra-thin films with few layers of atoms; the tunneling barrier breakdown is due to the requirement of an ultra-thin tunneling barrier (e.g., <1 nm to reduce the resistance area for the spin transfer torque switching in the nanopillar. These failure issues limit the research and development of STT-MRAM to widely achieve commercial products. In this paper, we give a full analysis of failure mechanisms for PMA-MTJ and present some eventual solutions from device fabrication to system level integration to optimize the failure issues.

  2. Voltage-controlled magnetic anisotropy in Fe|MgO tunnel junctions studied by x-ray absorption spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Miwa, Shinji, E-mail: miwa@mp.es.osaka-u.ac.jp; Matsuda, Kensho; Tanaka, Kazuhito; Goto, Minori; Suzuki, Yoshishige [Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka 560-8531 (Japan); Kotani, Yoshinori; Nakamura, Tetsuya [Japan Synchrotron Radiation Research Institute/SPring-8, Sayo, Hyogo 679-5198 (Japan)

    2015-10-19

    In this study, voltage-controlled magnetic anisotropy (VCMA) in Fe|MgO tunnel junctions was investigated via the magneto-optical Kerr effect, soft x-ray absorption spectroscopy, and magnetic circular dichroism spectroscopy. The Fe|MgO tunnel junctions showed enhanced perpendicular magnetic anisotropy under external negative voltage, which induced charge depletion at the Fe|MgO interface. Despite the application of voltages of opposite polarity, no trace of chemical reaction such as a redox reaction attributed to O{sup 2−} migration was detected in the x-ray absorption spectra of the Fe. The VCMA reported in the Fe|MgO-based magnetic tunnel junctions must therefore originate from phenomena associated with the purely electric effect, that is, surface electron doping and/or redistribution induced by an external electric field.

  3. Magnetic properties and high room temperature TMR ratios of Co{sub 2}FeAl in magnetic tunnel junctions

    Energy Technology Data Exchange (ETDEWEB)

    Ebke, Daniel; Kugler, Zoe; Thomas, Patrick; Schebaum, Oliver; Schaefers, Markus; Nissen, Dennis; Schmalhorst, Jan; Huetten, Andreas; Thomas, Andy [Thin Films and Physics of Nanostructures, Physics Department, Bielefeld University (Germany)

    2010-07-01

    Spintronic devices have found a lot of attention in the recent years due to the possible new applications, e.g. a magnetic random access memory (MRAM). Therefore, materials with a high spin polarization such as half metallic Heusler compounds are eligible. In this work, we present low temperature tunnel magnetoresistance (TMR) values of up to 270% for MgO based magnetic tunnel junctions (MTJs) with Co{sub 2}FeAl and Co-Fe electrodes. A low temperature dependence leads to high room temperature TMR values of about 150%. The bulk magnetic moment and the element specific magnetic moment at the barrier interface were examined as a function of annealing temperature by alternating gradient magnetometer (AGM) and X-ray absorption spectroscopy (XAS)/X-ray magnetic circular dichroism (XMCD), respectively.

  4. Electron transport properties in InAs four-terminal ballistic junctions under weak magnetic fields

    Energy Technology Data Exchange (ETDEWEB)

    Koyama, M.; Fujiwara, K.; Amano, N.; Maemoto, T.; Sasa, S.; Inoue, M. [Nanomaterials Microdevices Research Center, Osaka Institute of Technology (JP)u, Osaka 535-8585 (Japan)

    2009-06-15

    We report on the electron transport properties based on ballistic electrons under magnetic fields in four-terminal ballistic junctions fabricated on an InAs/AlGaSb heterostructure. The four-terminal junction structure is composed of two longitudinal stems with two narrow wires slanted with 30 degree from the perpendicular axis. The electron focusing peak was obtained with the bend resistance measurement. Then it was investigated the nonlinear electron transport property of potential difference between longitudinal stems due to ballistic electrons with applying direct current from narrow wires. Observed nonlinearity showed clear rectification effects which have negative polarity regardless of input voltage polarity. Although this nonlinearity was qualitatively changed due to the Lorentz force under magnetic fields, the degradation of ballistic effects on nonlinear properties were observed when the current increased to higher strength. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  5. Similarities between normal- and super-currents in topological insulator magnetic tunnel junctions

    Energy Technology Data Exchange (ETDEWEB)

    Soodchomshom, Bumned, E-mail: Bumned@hotmail.co [ThEP Center, Commission of Higher Education, 328 Si Ayuthaya Rd. Bangkok 10400 (Thailand); Chantngarm, Peerasak [Department of Electronics and Telecommunication Engineering, Faculty of Engineering, Pathumwan Institute of Technology, Bangkok 10330 (Thailand)

    2010-11-15

    This work compares the normal-current in a NM/Fi/NM junction with the super-current in a SC/Fi/SC junction, where both are topological insulator systems. NM and Fi are normal region and ferromagnetic region of thickness d with exchange energy m playing a role of the mass of the Dirac electrons and with the gate voltage V{sub G}, respectively. SC is superconducting region induced by a s-wave superconductor. We show that, interestingly, the critical super-current passing through a SC/Fi/SC junction behaves quite similar to the normal-current passing through a NM/Fi/NM junction. The normal-current and super-current exhibit N-peak oscillation, found when currents are plotted as a function of the magnetic barrier strength {chi} {approx} md/hv{sub F}. With the barrier strength Z {approx} V{sub G}d/hv{sub F}, the number of peaks N is determined through the relation Z {approx} N{pi} + {sigma}{pi} (with 0 < {sigma}{<=}1 for {chi} < Z). The normal- and the super-currents also exhibit oscillating with the same height for all of peaks, corresponding to the Dirac fermion tunneling behavior. These anomalous oscillating currents due to the interplay between gate voltage and magnetic field in the barrier were not found in graphene-based NM/Fi/NM and SC/Fi/SC junctions. This is due to the different magnetic effect between the Dirac fermions in topological insulator and graphene.

  6. Current phase relation in nanowire based Josephson junctions

    Science.gov (United States)

    Szombati, Daniel; Nadj-Perge, Stevan; Geresdi, Attila; Mourik, Vincent; Zuo, Kun; Woerkom, David; Car, Diana; Bakkers, Erik; Kouwenhoven, Leo

    2015-03-01

    Junctions based on small band-gap nanowires are convenient platform for studying Josephson effect in the presence of strong spin-orbit coupling. As predicted by theory, due to the interplay between strong Zeeman interaction and large spin orbing coupling in these nanowires, the critical current and in particular current phase relation exhibits rich set of features in the presence of external magnetic field and electrostatic gating. We study supercurrent transport through Indium Antimonide nanowires contacted using Niobium-Titanium-Nitride leads using both current and phase bias measurements. Our results provide useful insights into superconductor/semiconductor hybrid systems capable of hosting Majorana fermions, potential building blocks for topological quantum computing.

  7. Magnetic tunnel junction on a magnetostrictive substrate: An ultrasensitive magnetic-field sensor

    Science.gov (United States)

    Pertsev, N. A.

    2016-09-01

    The concept of a magnetic tunnel junction (MTJ) fabricated on an active substrate made of a highly magnetostrictive ferromagnetic material is described theoretically. It is shown that, under certain conditions, such hybrid device exhibits strongly enhanced sensitivity of the tunnel current to the external magnetic field. This feature results from the field-induced substrate deformations, which create lattice strains in the MTJ due to the interfacial mechanical interaction. If the free electrode of MTJ is made of a cubic ferromagnet like Co40Fe60 having strong magnetoelastic coupling between the magnetization and strains, the field-induced magnetization reorientation here may be enhanced by the strain effect drastically. This reorientation should lead to a change in the junction's electrical conductance because the magnetization of the reference electrode may be pinned by adjacent antiferromagnetic layer to keep its initial direction. Taking into account additional strain effects on the height and width of the tunnel barrier and the effective mass of tunneling electrons, we performed numerical calculations of the conductance magnetosensitivity for the CoFe/MgO/CoFeB junctions mechanically coupled to the FeGaB film grown on Si and found that such hybrid device is promising as an ultrasensitive room-temperature magnetic-field sensor.

  8. Comparison of the magneto-Peltier and magneto-Seebeck effects in magnetic tunnel junctions

    Science.gov (United States)

    Shan, J.; Dejene, F. K.; Leutenantsmeyer, J. C.; Flipse, J.; Münzenberg, M.; van Wees, B. J.

    2015-07-01

    Understanding heat generation and transport processes in a magnetic tunnel junction (MTJ) is a significant step towards improving its application in current memory devices. Recent work has experimentally demonstrated the magneto-Seebeck effect in MTJs, where the Seebeck coefficient of the junction varies as the magnetic configuration changes from a parallel (P) to an antiparallel (AP) configuration. Here we report a study on its reciprocal effect, the magneto-Peltier effect, where the heat flow carried by the tunneling electrons is altered by changing the magnetic configuration of the MTJ. The magneto-Peltier signal that reflects the change in the temperature difference across the junction between the P and AP configurations scales linearly with the applied current in the small bias but is greatly enhanced in the large-bias regime, due to higher-order Joule heating mechanisms. By carefully extracting the linear response which reflects the magneto-Peltier effect, and comparing it with the magneto-Seebeck measurements performed on the same device, we observe results consistent with Onsager reciprocity. We estimate a magneto-Peltier coefficient of 13.4 mV in the linear regime using a three-dimensional thermoelectric model. Our result opens up the possibility of programmable thermoelectric devices based on the Peltier effect in MTJs.

  9. Magnetic tunnel junctions with integrated thermometers for magnetothermopower measurements

    Science.gov (United States)

    Böhnert, T.; Serrano-Guisan, S.; Paz, E.; Lacoste, B.; Ferreira, R.; Freitas, P. P.

    2017-05-01

    Magnetic tunnel junction (MTJ) micropillars were fabricated with integrated thermometers and a heater line (HL) for thermovoltage measurements. This novel thermometer configuration enabled a direct measurement of ΔT across the MTJ micropillar. The MTJ devices were patterned from a CoFeB/MgO/CoFeB stack, with a 1.2 nm to 1.6 nm MgO wedge across the wafer, resulting in resistance area products in the range of 0.7 kΩ · µm2  MTJ structure and the thermopower were estimated with a noticeable improvement of the measurement accuracy. The studied MTJ structures showed tunneling magnetoresistance (TMR) ratios up to 125%, and tunneling magnetothermopower (TMTP) up to 35%.

  10. Impurity-limited quantum transport variability in magnetic tunnel junctions

    Science.gov (United States)

    Zhuang, Jianing; Wang, Yin; Zhou, Yan; Wang, Jian; Guo, Hong

    2017-08-01

    We report an extensive first-principles investigation of impurity-induced device-to-device variability of spin-polarized quantum tunneling through Fe/MgO/Fe magnetic tunnel junctions (MTJ). In particular, we calculated the tunnel magnetoresistance ratio (TMR) and the average values and variances of the currents and spin transfer torque (STT) of an interfacially doped Fe/MgO/Fe MTJ. Further, we predicted that N-doped MgO can improve the performance of a doped Fe/MgO/Fe MTJ. Our firstprinciples calculations of the fluctuations of the on/off currents and STT provide vital information for future predictions of the long-term reliability of spintronic devices, which is imperative for high-volume production.

  11. Perpendicular magnetic tunnel junctions with a synthetic storage or reference layer: A new route towards Pt- and Pd-free junctions

    Science.gov (United States)

    Cuchet, Léa; Rodmacq, Bernard; Auffret, Stéphane; Sousa, Ricardo C.; Prejbeanu, Ioan L.; Dieny, Bernard

    2016-02-01

    We report here the development of Pt and Pd-free perpendicular magnetic tunnel junctions (p-MTJ) for STT-MRAM applications. We start by studying a p-MTJ consisting of a bottom synthetic Co/Pt reference layer and a synthetic FeCoB/Ru/FeCoB storage layer covered with an MgO layer. We first investigate the evolution of RKKY coupling with Ru spacer thickness in such a storage layer. The coupling becomes antiferromagnetic above 0.5 nm and its strength decreases monotonously with increasing Ru thickness. This contrasts with the behavior of Co-based systems for which a maximum in interlayer coupling is generally observed around 0.8 nm. A thin Ta insertion below the Ru spacer considerably decreases the coupling energy, without basically changing its variation with Ru thickness. After optimization of the non-magnetic and magnetic layer thicknesses, it appears that such a FeCoB/Ru/FeCoB synthetic storage layer sandwiched between MgO barriers can be made stable enough to actually be used as hard reference layer in single or double magnetic tunnel junctions, the storage layer being now a single soft FeCoB layer. Finally, we realize Pt- or Pd-free robust perpendicular magnetic tunnel junctions, still keeping the advantage of a synthetic reference layer in terms of reduction of stray fields at small pillar sizes.

  12. Magnetic oscillations driven by the spin Hall effect in 3-terminal magnetic tunnel junction devices.

    Science.gov (United States)

    Liu, Luqiao; Pai, Chi-Feng; Ralph, D C; Buhrman, R A

    2012-11-02

    We show that a direct current in a tantalum microstrip can induce steady-state magnetic oscillations in an adjacent nanomagnet through spin torque from the spin Hall effect (SHE). The oscillations are detected electrically via a magnetic tunnel junction (MTJ) contacting the nanomagnet. The oscillation frequency can be controlled using the MTJ bias to tune the magnetic anisotropy. In this 3-terminal device, the SHE torque and the MTJ bias therefore provide independent controls of the oscillation amplitude and frequency, enabling new approaches for developing tunable spin torque nano-oscillators.

  13. Giant thermal spin torque assisted magnetic tunnel junction switching

    Science.gov (United States)

    Pushp, Aakash

    Spin-polarized charge-currents induce magnetic tunnel junction (MTJ) switching by virtue of spin-transfer-torque (STT). Recently, by taking advantage of the spin-dependent thermoelectric properties of magnetic materials, novel means of generating spin-currents from temperature gradients, and their associated thermal-spin-torques (TSTs) have been proposed, but so far these TSTs have not been large enough to influence MTJ switching. Here we demonstrate significant TSTs in MTJs by generating large temperature gradients across ultrathin MgO tunnel barriers that considerably affect the switching fields of the MTJ. We attribute the origin of the TST to an asymmetry of the tunneling conductance across the zero-bias voltage of the MTJ. Remarkably, we estimate through magneto-Seebeck voltage measurements that the charge-currents that would be generated due to the temperature gradient would give rise to STT that is a thousand times too small to account for the changes in switching fields that we observe. Reference: A. Pushp*, T. Phung*, C. Rettner, B. P. Hughes, S.-H. Yang, S. S. P. Parkin, 112, 6585-6590 (2015).

  14. Giant thermal spin-torque–assisted magnetic tunnel junction switching

    Science.gov (United States)

    Pushp, Aakash; Phung, Timothy; Rettner, Charles; Hughes, Brian P.; Yang, See-Hun; Parkin, Stuart S. P.

    2015-01-01

    Spin-polarized charge currents induce magnetic tunnel junction (MTJ) switching by virtue of spin-transfer torque (STT). Recently, by taking advantage of the spin-dependent thermoelectric properties of magnetic materials, novel means of generating spin currents from temperature gradients, and their associated thermal-spin torques (TSTs), have been proposed, but so far these TSTs have not been large enough to influence MTJ switching. Here we demonstrate significant TSTs in MTJs by generating large temperature gradients across ultrathin MgO tunnel barriers that considerably affect the switching fields of the MTJ. We attribute the origin of the TST to an asymmetry of the tunneling conductance across the zero-bias voltage of the MTJ. Remarkably, we estimate through magneto-Seebeck voltage measurements that the charge currents that would be generated due to the temperature gradient would give rise to STT that is a thousand times too small to account for the changes in switching fields that we observe. PMID:25971730

  15. Perpendicular magnetic anisotropy in CoXPd100-X alloys for magnetic tunnel junctions

    Science.gov (United States)

    Clark, B. D.; Natarajarathinam, A.; Tadisina, Z. R.; Chen, P. J.; Shull, R. D.; Gupta, S.

    2017-08-01

    CoFeB/MgO-based perpendicular magnetic tunnel junctions (p-MTJ's) with high anisotropy and low damping are critical for spin-torque transfer random access memory (STT-RAM). Most schemes of making the pinned CoFeB fully perpendicular require ferrimagnets with high damping constants, a high temperature-grown L10 alloy, or an overly complex multilayered synthetic antiferromagnet (SyAF). We report a compositional study of perpendicular CoxPd alloy-pinned Co20Fe60B20/MgO based MTJ stacks, grown at moderate temperatures in a planetary deposition system. The perpendicular anisotropy of the CoxPd alloy films can be tuned based on the layer thickness and composition. The films were characterized by alternating gradient magnetometry (AGM), energy-dispersive X-rays (EDX), and X-ray diffraction (XRD). Current-in-plane tunneling (CIPT) measurements have also been performed on the compositionally varied CoxPd MTJ stacks. The CoxPd alloy becomes fully perpendicular at approximately x = 30% (atomic fraction) Co. Full-film MTJ stacks of Si/SiO2/MgO (13)/CoXPd100-x (50)/Ta (0.3)/CoFeB (1)/MgO (1.6)/CoFeB (1)/Ta (5)/Ru (10), with the numbers enclosed in parentheses being the layer thicknesses in nm, were sputtered onto thermally oxidized silicon substrates and in-situ lamp annealed at 400 °C for 5 min. CIPT measurements indicate that the highest TMR is observed for the CoPd composition with the highest perpendicular magnetic anisotropy.

  16. In-plane magnetic field effect on switching voltage and thermal stability in electric-field-controlled perpendicular magnetic tunnel junctions

    Science.gov (United States)

    Grezes, C.; Rojas Rozas, A.; Ebrahimi, F.; Alzate, J. G.; Cai, X.; Katine, J. A.; Langer, J.; Ocker, B.; Khalili Amiri, P.; Wang, K. L.

    2016-07-01

    The effect of in-plane magnetic field on switching voltage (Vsw) and thermal stability factor (Δ) are investigated in electric-field-controlled perpendicular magnetic tunnel junctions (p-MTJs). Dwell time measurements are used to determine the voltage dependence of the energy barrier height for various in-plane magnetic fields (Hin), and gain insight into the Hin dependent energy landscape. We find that both Vsw and Δ decrease with increasing Hin, with a dominant linear dependence. The results are reproduced by calculations based on a macrospin model while accounting for the modified magnetization configuration in the presence of an external magnetic field.

  17. Dependency of tunneling magneto-resistance on Fe insertion-layer thickness in Co{sub 2}Fe{sub 6}B{sub 2}/MgO-based magnetic tunneling junctions

    Energy Technology Data Exchange (ETDEWEB)

    Chae, Kyo-Suk [MRAM Center, Department of Electronics and Computer Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of); Samsung Electronics Co., Ltd., San #16 Banwol-dong, Hwasung-City, Gyeonggi-Do 445-701 (Korea, Republic of); Park, Jea-Gun, E-mail: parkjgL@hanyang.ac.kr [MRAM Center, Department of Electronics and Computer Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of)

    2015-04-21

    For Co{sub 2}Fe{sub 6}B{sub 2}/MgO-based perpendicular magnetic tunneling junctions spin valves with [Co/Pd]{sub n}-synthetic-antiferromagnetic (SyAF) layers, the tunneling-magneto-resistance (TMR) ratio strongly depends on the nanoscale Fe insertion-layer thickness (t{sub Fe}) between the Co{sub 2}Fe{sub 6}B{sub 2} pinned layer and MgO tunneling barrier. The TMR ratio rapidly increased as t{sub Fe} increased up to 0.4 nm by improving the crystalline linearity of a MgO tunneling barrier and by suppressing the diffusion of Pd atoms from a [Co/Pd]{sub n}-SyAF. However, it abruptly decreased by further increasing t{sub Fe} in transferring interfacial-perpendicular magnetic anisotropy into the IMA characteristic of the Co{sub 2}Fe{sub 6}B{sub 2} pinned layer. Thus, the TMR ratio peaked at t{sub Fe} = 0.4 nm: i.e., 120% at 29 Ωμm{sup 2}.

  18. Development and process control of magnetic tunnel junctions for magnetic random access memory devices

    Science.gov (United States)

    Kula, Witold; Wolfman, Jerome; Ounadjela, Kamel; Chen, Eugene; Koutny, William

    2003-05-01

    We report on the development and process control of magnetic tunnel junctions (MTJs) for magnetic random access memory (MRAM) devices. It is demonstrated that MTJs with high magnetoresistance ˜40% at 300 mV, resistance-area product (RA) ˜1-3 kΩ μm2, low intrinsic interlayer coupling (Hin) ˜2-3 Oe, and excellent bit switching characteristics can be developed and fully integrated with complementary metal-oxide-semiconductor circuitry into MRAM devices. MTJ uniformity and repeatability level suitable for mass production has been demonstrated with the advanced processing and monitoring techniques.

  19. Micromagnetic simulation of electric-field-assisted magnetization switching in perpendicular magnetic tunnel junction

    Directory of Open Access Journals (Sweden)

    Chikako Yoshida

    2017-05-01

    Full Text Available The feasibility of a voltage assisted unipolar switching in perpendicular magnetic tunnel junction (MTJ has been studied using a micromagnetic simulation. Assuming a linear modulation of anisotropy field with voltage, both parallel (P to anti-parallel (AP and AP to P switchings were observed by application of unipolar voltage pulse without external magnetic field assistance. In latter case, the final P state can only be achieved with an ultrashort voltage pulse which vanishes before spin transfer torque (STT becomes dominant to restore the initial AP state. In addition, it was found that the larger change in anisotropy field is required for the MTJ with smaller diameter.

  20. Micromagnetic simulation of electric-field-assisted magnetization switching in perpendicular magnetic tunnel junction

    Science.gov (United States)

    Yoshida, Chikako; Noshiro, Hideyuki; Yamazaki, Yuichi; Sugii, Toshihiro; Tanaka, Tomohiro; Furuya, Atsushi; Uehara, Yuji

    2017-05-01

    The feasibility of a voltage assisted unipolar switching in perpendicular magnetic tunnel junction (MTJ) has been studied using a micromagnetic simulation. Assuming a linear modulation of anisotropy field with voltage, both parallel (P) to anti-parallel (AP) and AP to P switchings were observed by application of unipolar voltage pulse without external magnetic field assistance. In latter case, the final P state can only be achieved with an ultrashort voltage pulse which vanishes before spin transfer torque (STT) becomes dominant to restore the initial AP state. In addition, it was found that the larger change in anisotropy field is required for the MTJ with smaller diameter.

  1. FeGa/MgO/Fe/GaAs(001) magnetic tunnel junction: Growth and magnetic properties

    Energy Technology Data Exchange (ETDEWEB)

    Gobaut, B., E-mail: benoit.gobaut@elettra.eu [Sincrotrone Trieste S.C.p.A., S.S. 14-km 163.5, Area Science Park, 34012 Trieste (Italy); Ciprian, R.; Salles, B.R.; Krizmancic, D. [Laboratorio TASC, IOM-CNR, S.S. 14-km 163.5, Basovizza, 34149 Trieste (Italy); Rossi, G. [Laboratorio TASC, IOM-CNR, S.S. 14-km 163.5, Basovizza, 34149 Trieste (Italy); Dipartimento di Fisica, Università di Milano, via Celoria 16, 20133 Milano (Italy); Panaccione, G. [Laboratorio TASC, IOM-CNR, S.S. 14-km 163.5, Basovizza, 34149 Trieste (Italy); Eddrief, M.; Marangolo, M. [Sorbonne Universites, UPMC Univ Paris 06, UMR 7588, INSP, 4 place Jussieu, 75005 Paris (France); CNRS, UMR 7588, Institut des NanoSciences de Paris, 4 place Jussieu, 75005 Paris (France); Torelli, P. [Laboratorio TASC, IOM-CNR, S.S. 14-km 163.5, Basovizza, 34149 Trieste (Italy)

    2015-06-01

    Research on spintronics and on multiferroics leads now to the possibility of combining the properties of these materials in order to develop new functional devices. Here we report the integration of a layer of magnetostrictive material into a magnetic tunnel junction. A FeGa/MgO/Fe heterostructure has been grown on a GaAs(001) substrate by molecular beam epitaxy (MBE) and studied by X-ray magnetic circular dichroism (XMCD). The comparison between magneto optical Kerr effect (MOKE) measurements and hysteresis performed in total electron yield allowed distinguishing the ferromagnetic hysteresis loop of the FeGa top layer from that of the Fe buried layer, evidencing a different switching field of the two layers. This observation indicates an absence of magnetic coupling between the two ferromagnetic layers despite the thickness of the MgO barrier of only 2.5 nm. The in-plane magnetic anisotropy has also been investigated. Overall results show the good quality of the heterostructure and the general feasibility of such a device using magnetostrictive materials in magnetic tunnel junction.

  2. Static properties of small Josephson tunnel junctions in an oblique magnetic field

    DEFF Research Database (Denmark)

    Monaco, Roberto; Aarøe, Morten; Mygind, Jesper;

    2009-01-01

    We have carried out a detailed experimental investigation of the static properties of planar Josephson tunnel junctions in presence of a uniform external magnetic field applied in an arbitrary orientation with respect to the barrier plane. We considered annular junctions, as well as rectangular j...

  3. Comparison of the magneto-Peltier and magneto-Seebeck effects in magnetic tunnel junctions

    NARCIS (Netherlands)

    Shan, J.; Dejene, F. K.; Leutenantsmeyer, J. C.; Flipse, J.; Munzenberg, M.; van Wees, B. J.

    2015-01-01

    Understanding heat generation and transport processes in a magnetic tunnel junction (MTJ) is a significant step towards improving its application in current memory devices. Recent work has experimentally demonstrated the magneto-Seebeck effect in MTJs, where the Seebeck coefficient of the junction v

  4. Second order anisotropy contribution in perpendicular magnetic tunnel junctions.

    Science.gov (United States)

    Timopheev, A A; Sousa, R; Chshiev, M; Nguyen, H T; Dieny, B

    2016-06-01

    Hard-axis magnetoresistance loops were measured on perpendicular magnetic tunnel junction pillars of diameter ranging from 50 to 150 nm. By fitting these loops to an analytical model, the effective anisotropy fields in both free and reference layers were derived and their variations in temperature range between 340 K and 5 K were determined. It is found that a second-order anisotropy term of the form -K2cos(4)θ must be added to the conventional uniaxial -K1cos(2)θ term to explain the experimental data. This higher order contribution exists both in the free and reference layers. At T = 300 K, the estimated -K2/K1 ratios are 0.1 and 0.24 for the free and reference layers, respectively. The ratio is more than doubled at low temperatures changing the ground state of the reference layer from "easy-axis" to "easy-cone" regime. The easy-cone regime has clear signatures in the shape of the hard-axis magnetoresistance loops. The existence of this higher order anisotropy was also confirmed by ferromagnetic resonance experiments on FeCoB/MgO sheet films. It is of interfacial nature and is believed to be due to spatial fluctuations at the nanoscale of the first order anisotropy parameter at the FeCoB/MgO interface.

  5. Influence of hydrogen patterning gas on electric and magnetic properties of perpendicular magnetic tunnel junctions

    Energy Technology Data Exchange (ETDEWEB)

    Jeong, J. H., E-mail: juno@fris.tohoku.ac.jp [Graduate School of Engineering, Tohoku University, Sendai (Japan); Semiconductor R and D Center, Samsung Electronics Co., Ltd., Hwasung (Korea, Republic of); Endoh, T. [Graduate School of Engineering, Tohoku University, Sendai (Japan); Center for Innovative Integrated Electronic Systems, Tohoku University, Sendai (Japan); Kim, Y.; Kim, W. K.; Park, S. O. [Semiconductor R and D Center, Samsung Electronics Co., Ltd., Hwasung (Korea, Republic of)

    2014-05-07

    To identify the degradation mechanism in magnetic tunnel junctions (MTJs) using hydrogen, the properties of the MTJs were measured by applying an additional hydrogen etch process and a hydrogen plasma process to the patterned MTJs. In these studies, an additional 50 s hydrogen etch process caused the magnetoresistance (MR) to decrease from 103% to 14.7% and the resistance (R) to increase from 6.5 kΩ to 39 kΩ. Moreover, an additional 500 s hydrogen plasma process decreased the MR from 103% to 74% and increased R from 6.5 kΩ to 13.9 kΩ. These results show that MTJs can be damaged by the hydrogen plasma process as well as by the hydrogen etch process, as the atomic bonds in MgO may break and react with the exposed hydrogen gas. Compounds such as MgO hydrate very easily. We also calculated the damaged layer width (DLW) of the patterned MTJs after the hydrogen etching and plasma processes, to evaluate the downscaling limitations of spin-transfer-torque magnetic random-access memory (STT-MRAM) devices. With these calculations, the maximum DLWs at each side of the MTJ, generated by the etching and plasma processes, were 23.8 nm and 12.8 nm, respectively. This result validates that the hydrogen-based MTJ patterning processes cannot be used exclusively in STT-MRAMs beyond 20 nm.

  6. Charge and spin current oscillations in a tunnel junction induced by magnetic field pulses

    Science.gov (United States)

    Dartora, C. A.; Nobrega, K. Z.; Cabrera, G. G.

    2016-08-01

    Usually, charge and spin transport properties in tunnel junctions are studied in the DC bias regime and/or in the adiabatic regime of time-varying magnetic fields. In this letter, the temporal dynamics of charge and spin currents in a tunnel junction induced by pulsed magnetic fields is considered. At low bias voltages, energy and momentum of the conduction electrons are nearly conserved in the tunneling process, leading to the description of the junction as a spin-1/2 fermionic system coupled to time-varying magnetic fields. Under the influence of pulsed magnetic fields, charge and spin current can flow across the tunnel junction, displaying oscillatory behavior, even in the absence of DC bias voltage. A type of spin capacitance function, in close analogy to electric capacitance, is predicted.

  7. Elliptic annular Josephson tunnel junctions in an external magnetic field: the statics

    DEFF Research Database (Denmark)

    Monaco, Roberto; Granata, Carmine; Vettoliere, Antonio

    2015-01-01

    symmetric electrodes a transverse magnetic field is equivalent to an in-plane field applied in the direction of the current flow. Varying the ellipse eccentricity we reproduce all known results for linear and ring-shaped JTJs. Experimental data on high-quality Nb/Al-AlOx/Nb elliptic annular junctions...... or in the perpendicular direction. We report a detailed study of both short and long elliptic annular junctions having different eccentricities. For junctions having a normalized perimeter less than one the threshold curves are derived and computed even in the case with one trapped Josephson vortex. For longer junctions...

  8. Spin-crossover molecule based thermoelectric junction

    Energy Technology Data Exchange (ETDEWEB)

    Ghosh, Dibyajyoti [Chemistry and Physics of Materials Unit, Jawaharlal Nehru Centre for Advanced Scientific Research, Bangalore 560064 (India); Parida, Prakash [Institute for Theoretical Physics, University of Regensburg, D-93040 Regensburg (Germany); Pati, Swapan K. [Theoretical Sciences Unit, Jawaharlal Nehru Centre for Advanced Scientific Research, Bangalore 560064 (India)

    2015-05-11

    Using ab-initio numerical methods, we explore the spin-dependent transport and thermoelectric properties of a spin-crossover molecule (i.e., iron complex of 2-(1H-pyrazol-1-yl)-6-(1H-tetrazole-5-yl)pyridine) based nano-junction. We demonstrate a large magnetoresistance, efficient conductance-switching, and spin-filter activity in this molecule-based two-terminal device. The spin-crossover process also modulates the thermoelectric entities. It can efficiently switch the magnitude as well as spin-polarization of the thermocurrent. We find that thermocurrent is changed by ∼4 orders of magnitude upon spin-crossover. Moreover, it also substantially affects the thermopower and consequently, the device shows extremely efficient spin-crossover magnetothermopower generation. Furthermore, by tuning the chemical potential of electrodes into a certain range, a pure spin-thermopower can be achieved for the high-spin state. Finally, the reasonably large values of figure-of-merit in the presence and absence of phonon demonstrate a large heat-to-voltage conversion efficiency of the device. We believe that our study will pave an alternative way of tuning the transport and thermoelectric properties through the spin-crossover process and can have potential applications in generation of spin-dependent current, information storage, and processing.

  9. A 600-µW ultra-low-power associative processor for image pattern recognition employing magnetic tunnel junction-based nonvolatile memories with autonomic intelligent power-gating scheme

    Science.gov (United States)

    Ma, Yitao; Miura, Sadahiko; Honjo, Hiroaki; Ikeda, Shoji; Hanyu, Takahiro; Ohno, Hideo; Endoh, Tetsuo

    2016-04-01

    A novel associative processor using magnetic tunnel junction (MTJ)-based nonvolatile memories has been proposed and fabricated under a 90 nm CMOS/70 nm perpendicular-MTJ (p-MTJ) hybrid process for achieving the exceptionally low-power performance of image pattern recognition. A four-transistor 2-MTJ (4T-2MTJ) spin transfer torque magnetoresistive random access memory was adopted to completely eliminate the standby power. A self-directed intelligent power-gating (IPG) scheme specialized for this associative processor is employed to optimize the operation power by only autonomously activating currently accessed memory cells. The operations of a prototype chip at 20 MHz are demonstrated by measurement. The proposed processor can successfully carry out single texture pattern matching within 6.5 µs using 128-dimension bag-of-feature patterns, and the measured average operation power of the entire processor core is only 600 µW. Compared with the twin chip designed with 6T static random access memory, 91.2% power reductions are achieved. More than 88.0% power reductions are obtained compared with the latest associative memories. The further power performance analysis is discussed in detail, which verifies the special superiority of the proposed processor in power consumption for large-capacity memory-based VLSI systems.

  10. Fluxon propagation in long Josephson junctions with external magnetic field

    DEFF Research Database (Denmark)

    Olsen, O.H.; Samuelsen, Mogens Rugholm

    1981-01-01

    of breather-like waves depending on the velocity of the incident fluxon and the magnitude of the external magnetic field. Approximations based on energy analysis describing the border lines between regions of different processes are presented. Journal of Applied Physics is copyrighted by The American...... Institute of Physics....

  11. Large Voltage-Induced Changes in the Perpendicular Magnetic Anisotropy of an MgO-Based Tunnel Junction with an Ultrathin Fe Layer

    Science.gov (United States)

    Nozaki, Takayuki; Kozioł-Rachwał, Anna; Skowroński, Witold; Zayets, Vadym; Shiota, Yoichi; Tamaru, Shingo; Kubota, Hitoshi; Fukushima, Akio; Yuasa, Shinji; Suzuki, Yoshishige

    2016-04-01

    We study the voltage control of perpendicular magnetic anisotropy in an ultrathin Fe layer sandwiched between the Cr buffer and MgO tunneling barrier layers. A high-interface magnetic anisotropy energy of 2.1 mJ /m2 is achieved in the Cr/ultrathin Fe /MgO structure. A large voltage-induced perpendicular magnetic anisotropy change is observed under the negative-bias voltage applications for the case of the Fe layer thinner than 0.6 nm. The amplitude of the voltage-induced anisotropy energy change exhibits a strong Fe-thickness dependence and it reaches as high as 290 fJ /Vm . The observed high values of the surface anisotropy and voltage-induced anisotropy energy change demonstrate the feasibility of voltage-driven spintronic devices.

  12. Novel modeling and dynamic simulation of magnetic tunnel junctions for spintronic sensor development

    Science.gov (United States)

    Ji, Yu; Liu, Jie; Yang, Chunsheng

    2017-01-01

    Spintronic magnetic sensors with the integration of magnetic materials and microstructures have been enabling people to make use of the electron spin and charge properties in many applications. The high demand for such sensors has in turn spurred the technology developments in both novel materials and their atomic-level controls. Few works, however, have been carried out and reported thus far in modeling and simulation of these spintronic magnetic sensing units based on magnetic tunnel junction (MTJ) technology. Accordingly, this paper proposes a novel modeling approach as well as an iterative simulation methodology for MTJs. A more comprehensive electrical tunneling model is established for better interpreting the conductance and current generated by the electron tunneling, and this model can also facilitate the iterative simulation of the micromagnetic dynamics. Given the improved tunneling model as well as the updated dynamic simulation, the electric characteristics of an MTJ with an external magnetic field can be conveniently computed, which provides a reliable benchmark for the future development of novel spintronic magnetic sensors.

  13. Enhancement of the spin transfer torque efficiency in magnetic STM junctions

    Science.gov (United States)

    Palotás, Krisztián; Mándi, Gábor; Szunyogh, László

    2016-08-01

    We introduce a method for a combined calculation of charge and vector spin transport of elastically tunneling electrons in magnetic scanning tunneling microscopy (STM). The method is based on the three-dimensional Wentzel-Kramers-Brillouin (3D-WKB) approach combined with electronic structure calculations using first-principles density functional theory. As an application, we analyze the STM contrast inversion of the charge current above the Fe/W(110) surface depending on the bias voltage, tip-sample distance, and relative magnetization orientation between the sample and an iron tip. For the spin transfer torque (STT) vector we find that its in-plane component is generally larger than the out-of-plane component, and we identify a longitudinal spin current component, which, however, does not contribute to the torque. Our results suggest that the torque-current relationship in magnetic STM junctions follows the power law rather than a linear function. Consequently, we show that the ratio between the STT and the spin-polarized charge current is not constant, and more importantly, it can be tuned by the bias voltage, tip-sample distance, and magnetization rotation. We find that the STT efficiency can be enhanced by about a factor of seven by selecting a proper bias voltage. Thus, we demonstrate the possible enhancement of the STT efficiency in magnetic STM junctions, which can be exploited in technological applications. We discuss our results in view of the indirect measurement of the STT above the Fe/W(110) surface reported by S. Krause et al. [Phys. Rev. Lett. 107, 186601 (2011), 10.1103/PhysRevLett.107.186601].

  14. Effect of an interface Mg insertion layer on the reliability of a magnetic tunnel junction based on a Co{sub 2}FeAl full-Heusler alloy

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Jungmin; Kil, Gyuhyun; Lee, Gaehun; Choi, Chulmin; Song, Yunheub [Hanyang University, Seoul (Korea, Republic of); Sukegawa, Hiroaki; Mitani, Seiji [National Institute for Materials Science, Ibaraki (Japan)

    2014-04-15

    The reliability of a magnetic tunnel junction (MTJ) based on a Co{sub 2}FeAl (CFA) full-Heusler alloy with a MgO tunnel barrier was evaluated. In particular, the effect of a Mg insertion layer under the MgO was investigated in view of resistance drift by using various voltage stress tests. We compared the resistance change during constant voltage stress (CVS) and confirmed a trap/detrap phenomenon during the interval stress test for samples with and without a Mg insertion layer. The MTJ with a Mg insertion layer showed a relatively small resistance change for the CVS test and a reduced trap/detrap phenomenon for the interval stress test compared to the sample without a Mg insertion layer. This is understood to be caused by the improved crystallinity at the bottom of the CFA/MgO interface due to the Mg insertion layer, which provides a smaller number of trap site during the stress test. As a result, the interface condition of the MgO layer is very important for the reliability of a MTJ using a full-Heusler alloy, and the the insert of a Mg layer at the MgO interface is expected to be an effective method for enhancing the reliability of a MTJ.

  15. Enhancing the spin transfer torque in magnetic tunnel junctions by ac modulation

    Science.gov (United States)

    Chen, Xiaobin; Zhou, Chenyi; Zhang, Zhaohui; Chen, Jingzhe; Zheng, Xiaohong; Zhang, Lei; Hu, Can-Ming; Guo, Hong

    2017-03-01

    The phenomenon of spin transfer torque (STT) has attracted a great deal of interest due to its promising prospects in practical spintronic devices. In this paper, we report a theoretical investigation of STT in a noncollinear magnetic tunnel junction under ac modulation based on the nonequilibrium Green's-function formalism, and we derive a closed formulation for predicting the time-averaged STT. Using this formulation, the ac STT of a carbon-nanotube-based magnetic tunnel junction is analyzed. Under ac modulation, the low-bias linear (quadratic) dependence of the in-plane (out-of-plane) torque on bias still holds, and the sinθ dependence on the noncollinear angle is maintained. By photon-assisted tunneling, the bias-induced components of the in-plane and out-of-plane torques can be enhanced significantly, about 12 and 75 times, respectively. Our analysis reveals the condition for achieving optimized STT enhancement and suggests that ac modulation is a very effective way for electrical manipulation of STT.

  16. Behavioural model of Spin Torque Transfer Magnetic Tunnel Junction, Using Verilog-A

    Science.gov (United States)

    Garg, Rishubh; Kumar, Deepak; Jindal, Navneet; Negi, Nandita; Ahuja, Chetna

    2012-11-01

    A novel simple and efficient model of Spin Torque Transfer Magnetic Tunnel Junction (STT-MTJ) is presented. The model is implemented using Verilog-A. The model accurately emulates the main properties of an STT-MTJ which includes Tunnel Magneto resistance Ratio (TMR), its dependence on the voltage bias and the Critical switching current. The novelty of the model lies in the fact that the voltage dependence of TMR has been modeled using a single equation dividing it into three different operating regions. A register based on the model is also developed. The model can be used for faster simulations of hybrid Magnetic CMOS circuits and in various other wide range of applications. The models were verified using Synopsys Hspice 2010.

  17. Observation of thermally driven field-like spin torque in magnetic tunnel junctions

    Energy Technology Data Exchange (ETDEWEB)

    Bose, Arnab, E-mail: arnabbose@ee.iitb.ac.in; Jain, Sourabh; Asam, Nagarjuna; Bhuktare, Swapnil; Singh, Hanuman; Tulapurkar, Ashwin A. [Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai 400076 (India); Shukla, Amit Kumar; Konishi, Katsunori; Lam, Duc Duong; Fujii, Yuya; Miwa, Shinji; Suzuki, Yoshishige [Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka 560-8531 (Japan)

    2016-07-18

    We report the thermally driven giant field-like spin-torque in magnetic tunnel junctions (MTJ) on application of heat current from top to bottom. The field-like term is detected by the shift of the magneto-resistance hysteresis loop applying temperature gradient. We observed that the field-like term depends on the magnetic symmetry of the MTJ. In asymmetric structures, with different ferromagnetic materials for free and fixed layers, the field-like term is greatly enhanced. Our results show that a pure spin current density of the order of 10{sup 9 }A/m{sup 2} can be produced by creating a 120 mK temperature difference across 0.9 nm thick MgO tunnelling barrier. Our results will be useful for writing MTJ and domain wall-based memories using thermally driven spin torque.

  18. DC SQUID based on the mesoscopic multiterminal Josephson junction

    OpenAIRE

    Amin, M. H. S.; Omelyanchouk, A. N.; Zagoskin, A. M.

    2001-01-01

    A theory is offered for a novel device, mesoscopic four-terminal SQUID. The studied system consists of a mesoscopic four-terminal junction, one pair of terminals of which is incorporated in a superconducting ring and the other one is connected with a transport circuit. The nonlocal weak coupling between the terminals leads to effects of phase dragging and magnetic flux transfer. The behaviour of a four-terminal SQUID, controlled by the external parameters, the applied magnetic flux and the tr...

  19. Enhanced voltage-controlled magnetic anisotropy in magnetic tunnel junctions with an MgO/PZT/MgO tunnel barrier

    Science.gov (United States)

    Chien, Diana; Li, Xiang; Wong, Kin; Zurbuchen, Mark A.; Robbennolt, Shauna; Yu, Guoqiang; Tolbert, Sarah; Kioussis, Nicholas; Khalili Amiri, Pedram; Wang, Kang L.; Chang, Jane P.

    2016-03-01

    Compared with current-controlled magnetization switching in a perpendicular magnetic tunnel junction (MTJ), electric field- or voltage-induced magnetization switching reduces the writing energy of the memory cell, which also results in increased memory density. In this work, an ultra-thin PZT film with high dielectric constant was integrated into the tunneling oxide layer to enhance the voltage-controlled magnetic anisotropy (VCMA) effect. The growth of MTJ stacks with an MgO/PZT/MgO tunnel barrier was performed using a combination of sputtering and atomic layer deposition techniques. The fabricated MTJs with the MgO/PZT/MgO barrier demonstrate a VCMA coefficient, which is ˜40% higher (19.8 ± 1.3 fJ/V m) than the control sample MTJs with an MgO barrier (14.3 ± 2.7 fJ/V m). The MTJs with the MgO/PZT/MgO barrier also possess a sizeable tunneling magnetoresistance (TMR) of more than 50% at room temperature, comparable to the control MTJs with an MgO barrier. The TMR and enhanced VCMA effect demonstrated simultaneously in this work make the MgO/PZT/MgO barrier-based MTJs potential candidates for future voltage-controlled, ultralow-power, and high-density magnetic random access memory devices.

  20. Influence of the MgO barrier thickness on the lifetime characteristics of magnetic tunnelling junctions for sensors

    Science.gov (United States)

    Conca, A.; Casper, F.; Paul, J.; Lehndorff, R.; Jakob, G.; Kläui, M.; Hillebrands, B.; Leven, B.

    2016-06-01

    Magnetic tunnelling junctions increasingly enter the market for magnetic sensor applications. Thus, technological parameters such as the lifetime characteristics become more and more important. Here, an analysis of the lifetime characteristics of magnetic tunnelling junctions using the Weibull statistical distribution for CoFeB/MgO/CoFeB junctions is presented. The Weibull distribution is governed by two parameters, the characteristic lifetime η of the population and the shape parameter β, which gives information about the presence of an infant mortality. The suitability of the Weibull distribution is demonstrated for the description of dielectric breakdown processes in MgO-based tunnelling junctions at different voltages. A study of the dependence of the characteristic lifetime extrapolated to the low voltage regime, and the β parameter on the nominal barrier thickness and the resistance  ×  area product of the MgO barrier is shown. The influence of the RF deposition power for the MgO barrier and an annealing step on the Weibull parameters is also discussed.

  1. Static properties of small Josephson tunnel junctions in a transverse magnetic field

    DEFF Research Database (Denmark)

    Monaco, R.; Aarøe, Morten; Mygind, Jesper;

    2008-01-01

    The magnetic field distribution in the barrier of small planar Josephson tunnel junctions is numerically simulated in the case when an external magnetic field is applied perpendicular to the barrier plane. The simulations allow for heuristic analytical solutions for the Josephson static phase pro...

  2. Modeling of switching energy of magnetic tunnel junction devices with tilted magnetization

    Energy Technology Data Exchange (ETDEWEB)

    Surawanitkun, C. [Science and Technology Program, Nongkhai Campus, Khon Kaen University, Nongkhai 43000 (Thailand); Kaewrawang, A. [KKU-Seagate Cooperation Research Laboratory, Faculty of Engineering, Khon Kaen University, Khon Kaen 40002 (Thailand); Siritaratiwat, A., E-mail: apirat@kku.ac.th [KKU-Seagate Cooperation Research Laboratory, Faculty of Engineering, Khon Kaen University, Khon Kaen 40002 (Thailand); Kruesubthaworn, A. [Science and Technology Program, Nongkhai Campus, Khon Kaen University, Nongkhai 43000 (Thailand); Sivaratana, R. [Seagate Technology, 1627, Teparak, Samutprakarn 10200 (Thailand); Jutong, N. [Institute of Physics, University of Augsburg, 86135 Augsburg (Germany); Mewes, C.K.A.; Mewes, T. [Department of Physics & Astronomy, MINT Center, University of Alabama, Tuscaloosa, AL 35487 (United States)

    2015-05-01

    For spin transfer torque (STT), the switching energy and thermal stability of magnetic tunnel junctions (MTJ) bits utilized in memory devices are important factors that have to be considered simultaneously. In this article, we examined the minimum energy for STT induced magnetization switching in MTJ devices for different in-plane angles of the magnetization in the free layer and the pinned layer with respect to the major axis of the elliptical cylinder of the cell. Simulations were performed by comparing the analytical solution with macrospin and full micromagnetic calculations. The results show good agreement of the switching energy calculated by using the three approaches for different initial angles of the magnetization of the free layer. Also, the low-energy location specifies the suitable value of both time and current in order to reduce the heat effect during the switching process. - Highlights: • Switching energy model was firstly examined with tiled magnetization in STT-RAM. • Simulation was performed by analytical solution, macrospin and micromagnetic models. • Low energy results from three models show agreement for tilt angle in free layer. • We also found an optimal tilt angle of the pinned layer. • Low-energy location specifies the suitable switching location to reduce heat effect.

  3. Memory cell operation based on small Josephson junctions arrays

    Science.gov (United States)

    Braiman, Y.; Nair, N.; Rezac, J.; Imam, N.

    2016-12-01

    In this paper we analyze a cryogenic memory cell circuit based on a small coupled array of Josephson junctions. All the basic memory operations (e.g., write, read, and reset) are implemented on the same circuit and different junctions in the array can in principle be utilized for these operations. The presented memory operation paradigm is fundamentally different from conventional single quantum flux operation logics (SFQ). As an example, we demonstrate memory operation driven by a SFQ pulse employing an inductively coupled array of three Josephson junctions. We have chosen realistic Josephson junction parameters based on state-of-the-art fabrication capabilities and have calculated access times and access energies for basic memory cell operations. We also implemented an optimization procedure based on the simulated annealing algorithm to calculate the optimized and typical values of access times and access energies.

  4. Optimization of the tunnel magnetoresistance of CoFeB/ MgO/ CoFeB - based magnetic tunnel junctions (MTJs) with e-beam evaporation barriers

    Energy Technology Data Exchange (ETDEWEB)

    Zbarskyy, Vladyslav; Walter, Marvin; Eilers, Gerrit; Muenzenberg, Markus [I. Physikalisches Institut, Georg-August-Universitaet Goettingen, 37077 Goettingen (Germany); Peretzki, Patrick; Seibt, Michael [IV. Physikalisches Institut, Georg-August-Universitaet Goettingen, 37077 Goettingen (Germany)

    2010-07-01

    The investigation of MTJs with a high tunnel magnetoresistance (TMR) is very important for the production of MRAM devices. All our CoFeB layers are prepared via magnetron sputtering and MgO barriers via e-beam evaporation. We investigate the magnetic switching properties of CoFeB/MgO/CoFeB MTJs with measurements of hysteresis curves - using the magneto-optical Kerr effect - and TMR curves, optimizing the thickness of the CoFeB layers. Another parameter we change to optimize the ferromagnetic CoFeB electrodes is the annealing temperature. Both influence the solid state epitaxy leading to crystallization directly at the MgO/CoFeB interface. The optimization of MgO barrier properties is also necessary for the quality of our devices. In this context we study the TMR behaviour with the variation of the sample temperature during the e-beam evaporation of MgO barrier.

  5. 0-π Transition Driven by Magnetic Proximity Effect in a Josephson Junction

    Science.gov (United States)

    Hikino, Shin-ichi; Yunoki, Seiji

    2015-02-01

    We theoretically study the Josephson effect in a superconductor/normal metal/superconductor (S/N/S) Josephson junction composed of s-wave Ss with N which is sandwiched by two ferromagnetic insulators (Fs), forming a spin valve, in the vertical direction of the junction. We show that the 0-π transition of the Josephson critical current occurs with increasing the thickness of N along the junction. This transition is due to the magnetic proximity effect (MPE) which induces ferromagnetic magnetization in the N. Moreover, we find that, even for fixed thickness of N, the proposed Josephson junction with the spin valve can be switched from π to 0 states and vice versa by varying the magnetization configuration (parallel or antiparallel) of two Fs. We also examine the effect of spin-orbit scattering on the Josephson critical current and argue that the 0-π transition found here can be experimentally observed within the current nanofabrication techniques, thus indicating a promising potential of this junction as a 0-π switching device operated reversibly with varying the magnetic configuration in the spin valve by, e.g., applying an external magnetic field. Our results not only provide possible applications in superconducting electronics but also suggest the importance of a fundamental concept of MPE in nanostructures of multilayer N/F systems.

  6. Spin-dependent thermoelectric effects in graphene-based superconductor junctions

    Science.gov (United States)

    Beiranvand, Razieh; Hamzehpour, Hossein

    2017-02-01

    Using the Bogoliubov-de Gennes formalism, we investigate the charge and spin-dependent thermoelectric effects in graphene-based superconductor junctions. The results demonstrate that despite normal-superconductor junctions, there is a temperature-dependent spin thermopower in both the graphene-based ferromagnetic-superconductor and ferromagnetic-Rashba spin-orbit region-superconductor junctions. It is also shown that in the presence of Rashba spin-orbit interaction, the charge and spin-dependent Seebeck coefficients reach their maximum up to 3.5 k B / e and 2.5 k B / e , respectively. Remarkably, these coefficients have a zero-point critical value with respect to the magnetic exchange field and chemical potential. This effect disappears when the Rashba coupling is absent. These results suggest that graphene-based superconductors can be used in spin-caloritronic devices.

  7. Width of the $0-\\pi$ phase transition in diffusive magnetic Josephson junctions

    OpenAIRE

    Shomali, Zahra; Zareyan, Malek; Belzig, Wolfgang

    2008-01-01

    We investigate the Josephson current between two superconductors (S) which are connected through a diffusive magnetic junction with a complex structure (F$_{c}$). Using the quantum circuit theory, we obtain the phase diagram of 0 and $\\pi$ Josephson couplings for F$_{c}$ being a IFI (insulator-ferromagnet-insulator) double barrier junction or a IFNFI structure (where N indicates a normal metal layer). Compared to a simple SFS structure, we find that the width of the transition, defined by the...

  8. Magnetic tunneling junctions with permalloy electrodes: a study of barrier, thermal annealing, and interlayer coupling

    Energy Technology Data Exchange (ETDEWEB)

    Liu Xiaoyong E-mail: xiaoyong_liu@brown.edu; Ren Cong; Ritchie, Lance; Schrag, B.D.; Xiao Gang; Li Laifeng

    2003-11-01

    Magnetic properties of Ni{sub 81}Fe{sub 19}/Al{sub 2}O{sub 3}/Ni{sub 81}Fe{sub 19} tunneling junctions are studied for different Al thicknesses and plasma oxidation times. A maximal magnetoresistance of 34% is obtained with Al thickness of 20 A. Magnetometry reveals large exchange bias fields ({approx}400 Oe) over a wide range of barrier thicknesses, indicating junctions of high quality. Transport measurements conducted on junctions before and after thermal annealing show a dramatic improvement in barrier quality after annealing. Interlayer coupling fields have been measured as a function of barrier thickness for different oxidation times.

  9. Electrical switching in Fe /Cr/MgO/Fe magnetic tunnel junctions

    Science.gov (United States)

    Halley, D.; Majjad, H.; Bowen, M.; Najjari, N.; Henry, Y.; Ulhaq-Bouillet, C.; Weber, W.; Bertoni, G.; Verbeeck, J.; Van Tendeloo, G.

    2008-05-01

    Hysteretic resistance switching is observed in epitaxial Fe /Cr/MgO/Fe magnetic tunnel junctions under bias voltage cycling between negative and positive values of about 1V. The junctions switch back and forth between high- and low-resistance states, both of which depend on the device bias history. A linear dependence is found between the magnitude of the tunnel magnetoresistance and the crafted resistance of the junctions. To explain these results, a model is proposed that considers electron transport both by elastic tunneling and by defect-assisted transmission.

  10. Recognition of Nucleic Acid Junctions Using Triptycene-Based Molecules

    OpenAIRE

    Barros, Stephanie A.; Chenoweth, David M.

    2014-01-01

    Nucleic acid modulation by small molecules is an essential process across the kingdoms of life. Targeting nucleic acids with small molecules represents a significant challenge at the forefront of chemical biology. Nucleic acid junctions are ubiquitous structural motifs in nature and in designed materials. Herein, we describe a new class of structure specific nucleic acid junction stabilizers based on a triptycene scaffold. Triptycenes provide significant stabilization of DNA and RNA three-way...

  11. Tunnel magnetoresistance in thermally robust Mo/CoFeB/MgO tunnel junction with perpendicular magnetic anisotropy

    Directory of Open Access Journals (Sweden)

    B. Fang

    2015-06-01

    Full Text Available We report on tunnel magnetoresistance and electric-field effect in the Mo buffered and capped CoFeB/MgO magnetic tunnel junctions (MTJs with perpendicular magnetic anisotropy. A large tunnel magnetoresistance of 120% is achieved. Furthermore, this structure shows greatly improved thermal stability and stronger electric-field-induced modulation effect in comparison with the Ta/CoFeB/MgO-based MTJs. These results suggest that the Mo-based MTJs are more desirable for next generation spintronic devices.

  12. A Survey on the Modeling of Magnetic Tunnel Junctions for Circuit Simulation

    Directory of Open Access Journals (Sweden)

    Hyein Lim

    2016-01-01

    Full Text Available Spin-transfer torque-based magnetoresistive random access memory (STT-MRAM is a promising candidate for universal memory that may replace traditional memory forms. It is expected to provide high-speed operation, scalability, low-power dissipation, and high endurance. MRAM switching technology has evolved from the field-induced magnetic switching (FIMS technique to the spin-transfer torque (STT switching technique. Additionally, material technology that induces perpendicular magnetic anisotropy (PMA facilitates low-power operation through the reduction of the switching current density. In this paper, the modeling of magnetic tunnel junctions (MTJs is reviewed. Modeling methods and models of MTJ characteristics are classified into two groups, macromodels and behavioral models, and the most important characteristics of MTJs, the voltage-dependent MTJ resistance and the switching behavior, are compared. To represent the voltage dependency of MTJ resistance, some models are based on physical mechanisms, such as Landau-Lifshitz-Gilbert (LLG equation or voltage-dependent conductance. Some behavioral models are constructed by adding fitting parameters or introducing new physical parameters to represent the complex switching behavior of an MTJ over a wide range of input current conditions. Other models that are not based on physical mechanisms are implemented by simply fitting to experimental data.

  13. Affordance-based individuation of junctions in Open Street Map

    Directory of Open Access Journals (Sweden)

    Simon Scheider

    2012-06-01

    Full Text Available We propose an algorithm that can be used to identify automatically the subset of street segments of a road network map that corresponds to a junction. The main idea is to use turn-compliant locomotion affordances, i.e., restricted patterns of supported movement, in order to specify junctions independently of their data representation, and in order to motivate tractable individuation and classification strategies. We argue that common approaches based solely on geometry or topology of the street segment graph are useful but insufficient proxies. They miss certain turn restrictions essential to junctions. From a computational viewpoint, the main challenge of affordance-based individuation of junctions lies in its complex recursive definition. In this paper, we show how Open Street Map data can be interpreted into locomotion affordances, and how the recursive junction definition can be translated into a deterministic algorithm. We evaluate this algorithm by applying it to small map excerpts in order to delineate the contained junctions.

  14. Perpendicularly magnetized ferrimagnetic [Mn50Ga50/Co2FeAl] superlattice and the utilization in magnetic tunnel junctions

    Directory of Open Access Journals (Sweden)

    Q. L. Ma

    2015-08-01

    Full Text Available The ferrimagnetic superlattice (SL [MnGa/Co2FeAl]n exhibiting perpendicular magnetic anisotropy opened a new method for spintronics materials used in magnetic random access memory, because of the high anisotropy, small damping constant and tunable magnetization. In this work, we fabricated SLs with different MnGa composition and studied the MnGa composition dependence of the structure and magnetic properties of the SLs. Furthermore, we fabricated fully perpendicular magnetic tunnel junctions with SLs as both top and bottom electrodes. A clear tunnel magnetoresistance (TMR effect with TMR ratio of 1.3% at room temperature was observed.

  15. Enhanced annealing stability and perpendicular magnetic anisotropy in perpendicular magnetic tunnel junctions using W layer

    Science.gov (United States)

    Chatterjee, Jyotirmoy; Sousa, Ricardo C.; Perrissin, Nicolas; Auffret, Stéphane; Ducruet, Clarisse; Dieny, Bernard

    2017-05-01

    The magnetic properties of the perpendicular storage electrode (buffer/MgO/FeCoB/Cap) were studied as a function of annealing temperature by replacing Ta with W and W/Ta cap layers with variable thicknesses. W in the cap boosts up the annealing stability and increases the effective perpendicular anisotropy by 30% compared to the Ta cap. Correspondingly, an increase in the FeCoB critical thickness characterizing the transition from perpendicular to in-plane anisotropy was observed. Thicker W layer in the W(t)/Ta 1 nm cap layer makes the storage electrode highly robust against annealing up to 570 °C. The stiffening of the overall stack resulting from the W insertion due to its very high melting temperature seems to be the key mechanism behind the extremely high thermal robustness. The Gilbert damping constant of FeCoB with the W/Ta cap was found to be lower when compared with the Ta cap and stable with annealing. The evolution of the magnetic properties of bottom pinned perpendicular magnetic tunnel junctions (p-MTJ) stack with the W2/Ta1 nm cap layer shows back-end-of-line compatibility with increasing tunnel magnetoresistance up to the annealing temperature of 425 °C. The pMTJ thermal budget is limited by the synthetic antiferromagnetic hard layer which is stable up to 425 °C annealing temperature while the storage layer is stable up to 455 °C.

  16. Scalable and thermally robust perpendicular magnetic tunnel junctions for STT-MRAM

    Science.gov (United States)

    Gottwald, M.; Kan, J. J.; Lee, K.; Zhu, X.; Park, C.; Kang, S. H.

    2015-01-01

    Thermal budget, stack thickness, and dipolar offset field control are crucial for seamless integration of perpendicular magnetic junctions (pMTJ) into semiconductor integrated circuits to build scalable spin-transfer-torque magnetoresistive random access memory. This paper is concerned with materials and process tuning to deliver thermally robust (400 °C, 30 min) and thin (i.e., fewer layers and integration-friendly) pMTJ utilizing Co/Pt-based bottom pinned layers. Interlayer roughness control is identified as a key enabler to achieve high thermal budgets. The dipolar offset fields of the developed film stacks at scaled dimensions are evaluated by micromagnetic simulations. This paper shows a path towards achieving sub-15 nm-thick pMTJ with tunneling magnetoresistance ratio higher than 150% after 30 min of thermal excursion at 400 °C.

  17. Scalable and thermally robust perpendicular magnetic tunnel junctions for STT-MRAM

    Energy Technology Data Exchange (ETDEWEB)

    Gottwald, M. [QUALCOMM Europe Incorporated, Kapeldreef 75, 3001 Heverlee (Belgium); Kan, J. J.; Lee, K.; Zhu, X.; Park, C.; Kang, S. H. [Corporate Research and Development, Qualcomm Technologies Incorporated, San Diego, California 92121-1714 (United States)

    2015-01-19

    Thermal budget, stack thickness, and dipolar offset field control are crucial for seamless integration of perpendicular magnetic junctions (pMTJ) into semiconductor integrated circuits to build scalable spin-transfer-torque magnetoresistive random access memory. This paper is concerned with materials and process tuning to deliver thermally robust (400 °C, 30 min) and thin (i.e., fewer layers and integration-friendly) pMTJ utilizing Co/Pt-based bottom pinned layers. Interlayer roughness control is identified as a key enabler to achieve high thermal budgets. The dipolar offset fields of the developed film stacks at scaled dimensions are evaluated by micromagnetic simulations. This paper shows a path towards achieving sub-15 nm-thick pMTJ with tunneling magnetoresistance ratio higher than 150% after 30 min of thermal excursion at 400 °C.

  18. Disorder Scattering in Magnetic Tunnel Junctions: Theory of Nonequilibrium Vertex Correction

    Science.gov (United States)

    Ke, Youqi; Xia, Ke; Guo, Hong

    2008-04-01

    We report a first principles formalism and its numerical implementation for treating quantum transport properties of nanoelectronic devices with atomistic disorder. We develop a nonequilibrium vertex correction (NVC) theory to handle the configurational average of random disorder at the density matrix level so that disorder effects to nonlinear and nonequilibrium quantum transport can be calculated from atomic first principles in a self-consistent and efficient manner. We implement the NVC into a Keldysh nonequilibrium Green’s function (NEGF) -based density functional theory (DFT) and apply the NEGF-DFT-NVC formalism to Fe/vacuum/Fe magnetic tunnel junctions with interface roughness disorder. Our results show that disorder has dramatic effects on the nonlinear spin injection and tunnel magnetoresistance ratio.

  19. Huge spin-transfer torque in a magnetic tunnel junction by a superlattice barrier

    Science.gov (United States)

    Chen, C. H.; Tseng, P.; Ko, C. W.; Hsueh, W. J.

    2017-09-01

    Huge spin-transfer torque (STT) in a magnetic tunnel junction (MTJ) achieved by superlattice barrier composed of alternate layers of a nonmagnetic metal and an insulator is proposed. The magnitude of the STT depends on the number of cells in the superlattice barrier and the nonmagnetic metal layer's thickness. The result shows that the STT of the novel superlattice-barrier MTJ can reach values up to four orders of magnitude greater than those of traditional single-barrier stacks based on three cells superlattice by designing the nonmagnetic metal layer's thickness. In addition, the spin-transfer torque of the proposed MTJ can also be thousands of magnitude greater than those of traditional double-barrier MTJs.

  20. Manipulating magnetism and conductance of an adatom-molecule junction on a metal surface: An ab initio study

    DEFF Research Database (Denmark)

    Tao, Kun; Stepanyuk, V.S.; Bruno, P.

    2008-01-01

    and conductance in molecule-adatom junctions can be tailored by the STM tip. Varying the tip-substrate distance the magnetic moment of the Co adatom can be switched on/off. The interplay between spin-polarized electron transport through the junction and its magnetic properties is demonstrated. A spin...

  1. A New Circuit Model for Spin-Torque Oscillator Including Perpendicular Torque of Magnetic Tunnel Junction

    Directory of Open Access Journals (Sweden)

    Hyein Lim

    2013-01-01

    Full Text Available Spin-torque oscillator (STO is a promising new technology for the future RF oscillators, which is based on the spin-transfer torque (STT effect in magnetic multilayered nanostructure. It is expected to provide a larger tunability, smaller size, lower power consumption, and higher level of integration than the semiconductor-based oscillators. In our previous work, a circuit-level model of the giant magnetoresistance (GMR STO was proposed. In this paper, we present a physics-based circuit-level model of the magnetic tunnel junction (MTJ-based STO. MTJ-STO model includes the effect of perpendicular torque that has been ignored in the GMR-STO model. The variations of three major characteristics, generation frequency, mean oscillation power, and generation linewidth of an MTJ-STO with respect to the amount of perpendicular torque, are investigated, and the results are applied to our model. The operation of the model was verified by HSPICE simulation, and the results show an excellent agreement with the experimental data. The results also prove that a full circuit-level simulation with MJT-STO devices can be made with our proposed model.

  2. Resonant spin-transfer torque in asymmetric double barrier magnetic tunnel junctions (MTJs)

    Science.gov (United States)

    Daqiq, Reza; Ghobadi, Nader

    2017-02-01

    The substitution effect of a Ferro-magnet (FM) electrode by a half-metallic FM material La0.7Sr0.3MnO3 (LSMO) on charge current and spin-transfer torque (STT) components is studied in MgO-based double barrier magnetic tunnel junctions (DBMTJs) with a middle non-magnetic metal (NM) layer. Using non-equilibrium Green's function (NEGF) formalism, it is observed that the current and STT components show oscillatory behavior due to quantum well states in the middle NM layer and resonant tunneling effect. We also study effect of difference in the thickness of the MgO insulators. Bias dependence demonstrate the magnitude enhancement of the current and in-plane STT in new asymmetric DBMTJs (A-DBMTJs) compared with symmetric DBMTJs (S-DBMTJs), however, perpendicular STT decreases in the A-DBMTJs. Results also show different behavior compared with conventional asymmetric MTJs and spin valves (SVs). Therefore, one can design new memory devices by means of suitable insulator and FM electrodes with proper thicknesses.

  3. Charge Transport across DNA-Based Three-Way Junctions.

    Science.gov (United States)

    Young, Ryan M; Singh, Arunoday P N; Thazhathveetil, Arun K; Cho, Vincent Y; Zhang, Yuqi; Renaud, Nicolas; Grozema, Ferdinand C; Beratan, David N; Ratner, Mark A; Schatz, George C; Berlin, Yuri A; Lewis, Frederick D; Wasielewski, Michael R

    2015-04-22

    DNA-based molecular electronics will require charges to be transported from one site within a 2D or 3D architecture to another. While this has been shown previously in linear, π-stacked DNA sequences, the dynamics and efficiency of charge transport across DNA three-way junction (3WJ) have yet to be determined. Here, we present an investigation of hole transport and trapping across a DNA-based three-way junction systems by a combination of femtosecond transient absorption spectroscopy and molecular dynamics simulations. Hole transport across the junction is proposed to be gated by conformational fluctuations in the ground state which bring the transiently populated hole carrier nucleobases into better aligned geometries on the nanosecond time scale, thus modulating the π-π electronic coupling along the base pair sequence.

  4. Non-equilibrium quantum transport of spin-polarized electrons and back action on molecular magnet tunnel-junction

    Science.gov (United States)

    Zhang, Chao; Yao, Hui; Nie, Yi-Hang; Liang, J.-Q.

    2016-11-01

    We investigate the non-equilibrium quantum transport through a single-molecule magnet embedded in a tunnel junction with ferromagnetic electrodes, which generate spin-polarized electrons. The lead magnetization direction is non-collinear with the uniaxial anisotropy easy-axis of molecule-magnet. Based on the Pauli rate-equation approach we demonstrate the magnetization reversion of molecule-magnet induced by the back action of spin-polarized current in the sequential tunnel regime. The asymptotic magnetization of molecular magnet and spin-polarization of transport current are obtained as functions of time by means of time-dependent solution of the rate equation. It is found that the antiparallel configuration of the ferromagnetic electrodes and molecular anisotropy easy-axis is an effective structure to reverse both the magnetization of molecule-magnet and spin-polarization of the transport current. Particularly the non-collinear angle dependence provides useful knowledge for the quantum manipulation of molecule-magnet and spin polarized electron-transport.

  5. Non-equilibrium quantum transport of spin-polarized electrons and back action on molecular magnet tunnel-junction

    Directory of Open Access Journals (Sweden)

    Chao Zhang

    2016-11-01

    Full Text Available We investigate the non-equilibrium quantum transport through a single-molecule magnet embedded in a tunnel junction with ferromagnetic electrodes, which generate spin-polarized electrons. The lead magnetization direction is non-collinear with the uniaxial anisotropy easy-axis of molecule-magnet. Based on the Pauli rate-equation approach we demonstrate the magnetization reversion of molecule-magnet induced by the back action of spin-polarized current in the sequential tunnel regime. The asymptotic magnetization of molecular magnet and spin-polarization of transport current are obtained as functions of time by means of time-dependent solution of the rate equation. It is found that the antiparallel configuration of the ferromagnetic electrodes and molecular anisotropy easy-axis is an effective structure to reverse both the magnetization of molecule-magnet and spin-polarization of the transport current. Particularly the non-collinear angle dependence provides useful knowledge for the quantum manipulation of molecule-magnet and spin polarized electron-transport.

  6. All-optical detection of magnetization precession in tunnel junctions under applied voltage

    Science.gov (United States)

    Sasaki, Yuta; Suzuki, Kazuya; Sugihara, Atsushi; Kamimaki, Akira; Iihama, Satoshi; Ando, Yasuo; Mizukami, Shigemi

    2017-02-01

    An all-optical time-resolved magneto-optical Kerr effect measurement of a micron-sized tunnel junction with a CoFeB electrode was performed. The femtosecond (fs) laser-induced magnetization precession was clearly observed at various magnetic field angles. The frequency f and relaxation time τ of the magnetization precession varied with the voltage applied via a MgO barrier. The precession dynamics were in accordance with Kittel’s ferromagnetic resonance mode, and the voltage-induced changes in f and τ were well explained by the voltage-induced change in the perpendicular magnetic anisotropy of -36 fJ/Vm.

  7. Effect of Anti-Diffusion Oxide Layer on Enhanced Thermal Stability of Magnetic Tunnel Junctions

    Institute of Scientific and Technical Information of China (English)

    ZHANG Zong-Zhi; ZHAO Hui; Cardoso S.; Freitas P. P.

    2006-01-01

    @@ Magnetic tunnel junctions (MTJs) with one proper oxidized FeOx layer placed between the Al oxide barrier and the top CoFe pinned layer show large tunnelling-magnetoresistance (TMR) signals as high as 39% after anneal at 380℃ .

  8. Thermoelectricity and disorder of FeCo/MgO/FeCo magnetic tunnel junctions

    NARCIS (Netherlands)

    Wang, S.Z.; Xia, K.; Bauer, G.E.W.

    2014-01-01

    We compute the thermoelectric transport parameterized by the Seebeck coefficient and thermal/electric conductance of random-alloy FeCo/MgO/FeCo(001) magnetic tunnel junctions (MTJs) from first principles using a generalized Landauer-Büttiker formalism. The thermopower is found to be typically smalle

  9. Probing momentum distributions in magnetic tunnel junctions via hot-electron decay

    NARCIS (Netherlands)

    Jansen, R.; Banerjee, T.; Park, B.G.; Lodder, J.C.

    2007-01-01

    The tunnel momentum distribution in a (magnetic) tunnel junction is probed by analyzing the decay of the hot electrons in the Co metal anode after tunneling, using a three-terminal transistor structure in which the hot-electron attenuation is sensitive to the tunnel momentum distribution. Solid stat

  10. Imaging of the dynamic magnetic structure in a parallel array of shunted Josephson junctions

    DEFF Research Database (Denmark)

    Doderer, T.; Kaplunenko, V. K.; Mygind, Jesper

    1994-01-01

    is applied to the edge junction of the array. This effect was found to be due to the self-induced magnetic field produced by the edge current. This nonuniform field divides the array into domains each spanning several unit cells and each containing the same number of flux quanta. We report on experimental...

  11. All-electric-controlled spin current switching in single-molecule magnet-tunnel junctions

    Institute of Scientific and Technical Information of China (English)

    Zhang Zheng-Zhong; Shen Rui; Sheng Li; Wang Rui-Qiang; Wang Bai-Gen; Xing Ding-Yu

    2011-01-01

    A single-molecule magnet (SMM)coupled to two normal metallic electrodes can both switch spin-up and spindown electronic currents within two different windows of SMM gate voltage. Such spin current switching in the SMM tunnel junction arises from spin-selected single electron resonant tunneling via the lowest unoccupied molecular orbit of the SMM. Since it is not magnetically controlled but all-electrically controlled, the proposed spin current switching effect may have potential applications in future spintronics.

  12. Generators of the auxiliary signals based on the Josephson junctions

    Directory of Open Access Journals (Sweden)

    V. M. Kychak

    2014-06-01

    Full Text Available Introduction and problem statement. Generators based on the Josephson junctions are advisable to use to ensure the generation of signals in the wavelength range from infrared to millimeter. It is necessary to build a dependence of the phase difference of the wave functions superconductor Josephson junctions from the parameters of the equivalent circuit of the resistive shunted tunnel junction. Solution of the problem. An analytical expression for calculating the dependence of the instantaneous voltage values from the parameters of the equivalent circuit resistive shunted Josephson junction is obtained. The dependence of the oscillation period from the parameters of the equivalent circuit elements is researched and a comparison of its values with the period of the output voltage of the generator based on three Josephson junctions is carried out. Conclusions. It is shown that the synchronization leads to decrement in the line width generation and increment the output voltage. Comparison of theoretical calculations and computer modeling shows that the differences do not exceed 25% and therefore they can be used for approximate calculations.

  13. Backhopping effect in magnetic tunnel junctions: Comparison between theory and experiment

    Energy Technology Data Exchange (ETDEWEB)

    Skowroński, Witold, E-mail: skowron@agh.edu.pl; Wrona, Jerzy; Stobiecki, Tomasz [AGH University of Science and Technology, Department of Electronics, Al. Mickiewicza 30, 30-059 Krakow (Poland); Ogrodnik, Piotr, E-mail: piotrogr@if.pw.edu.pl [Faculty of Physics, Warsaw University of Technology, Ul. Koszykowa 75, 00-662 Warsaw (Poland); Institute of Molecular Physics, Polish Academy of Sciences, Ul. Smoluchowskiego 17, 60-179 Poznań (Poland); Świrkowicz, Renata [Faculty of Physics, Warsaw University of Technology, Ul. Koszykowa 75, 00-662 Warsaw (Poland); Barnaś, Józef [Institute of Molecular Physics, Polish Academy of Sciences, Ul. Smoluchowskiego 17, 60-179 Poznań (Poland); Reiss, Günter [Thin Films and Physics of Nanostructures, Bielefeld University, 33615 Bielefeld (Germany); Dijken, Sebastiaan van [NanoSpin, Department of Applied Physics, Aalto University School of Science, P.O. Box 15100, FI-00076 Aalto (Finland)

    2013-12-21

    We report on magnetic switching and backhopping effects due to spin-transfer-torque in magnetic tunnel junctions. Experimental data on current-induced switching in junctions with a MgO tunnel barrier reveal random back-and-forth switching between magnetization states, which appears when the current direction favors the parallel magnetic configuration. The effect depends on the barrier thickness t{sub b} and is not observed in tunnel junctions with very thin MgO tunnel barriers, t{sub b} < 0.95 nm. The switching dependence on bias voltage and barrier thickness is explained in terms of the macrospin model, with the magnetization dynamics described by the modified Landau-Lifshitz-Gilbert equation. Numerical simulations indicate that the competition between in-plane and out-of-plane torque components can result in a non-deterministic switching behavior at high bias voltages, in agreement with experimental observations. When the barrier thickness is reduced, the overall coupling between the magnetic layers across the barrier becomes ferromagnetic, which suppresses the backhopping effect.

  14. Magnetic Field Dependence of the Critical Current of Planar Geometry Josephson Junctions

    Science.gov (United States)

    Ma, Meng; Cho, Ethan; Huynh, Chuong; Cybart, Shane; Dynes, Robert

    2015-03-01

    We report a study on the magnetic field dependence of the critical current of planar geometry Josephson junctions. We have fabricated Josephson junctions by using a focused helium ion beam to irradiate a narrow barrier in the plane of a 25 nm thick Y-Ba-Cu-O film. The London penetration depth λL is large (~1 μm) because of the ultra-thin thickness of the film. As a result, calculations of the Josephson penetration depth λJ are not realistic nor physical. Therefore in this work, we measure λJ experimentally. We tested devices with bridge widths ranging from 4 to 50 μm, and present measurements of the Fraunhofer quantum diffraction pattern (IC (B)). We observe a crossover from short to long junction behavior, which gives an experimentally measured λJ that ranges between 3 μm to 5 μm. The shape of the IC (B) pattern is strongly affected by the width of the bridge because of self-field effects. As the bridge width increases, Josephson vortices enter the junction and skew the patterns. This work shows that the electronic properties of the planar junctions are very different than those classical ``sandwich'' junctions due to the differences in geometry.

  15. Tunneling-Magnetoresistance Ratio Comparison of MgO-Based Perpendicular-Magnetic-Tunneling-Junction Spin Valve Between Top and Bottom Co2Fe6B2 Free Layer Structure

    Science.gov (United States)

    Lee, Du-Yeong; Lee, Seung-Eun; Shim, Tae-Hun; Park, Jea-Gun

    2016-09-01

    For the perpendicular-magnetic-tunneling-junction (p-MTJ) spin valve with a nanoscale-thick bottom Co2Fe6B2 free layer ex situ annealed at 400 °C, which has been used as a common p-MTJ structure, the Pt atoms of the Pt buffer layer diffused into the MgO tunneling barrier. This transformed the MgO tunneling barrier from a body-centered cubic (b.c.c) crystallized layer into a mixture of b.c.c, face-centered cubic, and amorphous layers and rapidly decreased the tunneling-magnetoresistance (TMR) ratio. The p-MTJ spin valve with a nanoscale-thick top Co2Fe6B2 free layer could prevent the Pt atoms diffusing into the MgO tunneling barrier during ex situ annealing at 400 °C because of non-necessity of a Pt buffer layer, demonstrating the TMR ratio of ~143 %.

  16. GaInN-based tunnel junctions with graded layers

    Science.gov (United States)

    Takasuka, Daiki; Akatsuka, Yasuto; Ino, Masataka; Koide, Norikatsu; Takeuchi, Tetsuya; Iwaya, Motoaki; Kamiyama, Satoshi; Akasaki, Isamu

    2016-08-01

    We demonstrated low-resistivity GaInN-based tunnel junctions using graded GaInN layers. A systematic investigation of the samples grown by metalorganic vapor phase epitaxy revealed that a tunnel junction consisting of a 4 nm both-sides graded GaInN layer (Mg: 1 × 1020 cm-3) and a 2 nm GaN layer (Si: 7 × 1020 cm-3) showed the lowest specific series resistance of 2.3 × 10-4 Ω cm2 at 3 kA/cm2 in our experiment. The InN mole fraction in the 4 nm both-sides graded GaInN layer was changed from 0 through 0.4 to 0. The obtained resistance is comparable to those of standard p-contacts with Ni/Au and MBE-grown tunnel junctions.

  17. 77 FR 38705 - Draft Specification for Airport Light Bases, Transformer Housings, Junction Boxes, and...

    Science.gov (United States)

    2012-06-28

    ... Federal Aviation Administration Draft Specification for Airport Light Bases, Transformer Housings... comment on the Draft ``Specification for Airport Light Bases, Transformer Housings, Junction Boxes, and... recommendations for airport light bases, transformer housings, junction boxes and accessories. The FAA has...

  18. Electrical control of memristance and magnetoresistance in oxide magnetic tunnel junctions

    KAUST Repository

    Zhang, Kun

    2015-01-01

    Electric-field control of magnetic and transport properties of magnetic tunnel junctions has promising applications in spintronics. Here, we experimentally demonstrate a reversible electrical manipulation of memristance, magnetoresistance, and exchange bias in Co/CoO–ZnO/Co magnetic tunnel junctions, which enables the realization of four nonvolatile resistance states. Moreover, greatly enhanced tunneling magnetoresistance of 68% was observed due to the enhanced spin polarization of the bottom Co/CoO interface. The ab initio calculations further indicate that the spin polarization of the Co/CoO interface is as high as 73% near the Fermi level and plenty of oxygen vacancies can induce metal–insulator transition of the CoO1−v layer. Thus, the electrical manipulation mechanism on the memristance, magnetoresistance and exchange bias can be attributed to the electric-field-driven migration of oxygen ions/vacancies between very thin CoO and ZnO layers.

  19. Effect of temperature and magnetic field on the photocurrent response of biomolecular bulk-hetero junction

    Science.gov (United States)

    Tajima, Hiroyuki; Sekiguchi, Yusuke; Matsuda, Masaki

    2012-02-01

    The photocurrent responses were investigated for the biomolecular bulk-hetero junction of chlorophyll α (Chl-α) and 1-(3-methoxycarbonyl)-propyl-1-phenyl-1-phenyl-(6,6)C61 (PCBM) in the temperature range between 300 K and 1.5 K under the magnetic field up to 8 T. The chopped-light photocurrent decreases on lowering the temperature. Below 10 K, photocurrent decrease was observed under the applied magnetic field. Decay of the photocurrent observed at 10 K was ascribed to the formation of the charged trap under light irradiation. The magnetic field effect (MFE) observed in this device was found to be very similar to that observed in P3HT:PCBM bulk-hetero junction at low temperatures.

  20. Size and voltage dependence of effective anisotropy in sub-100-nm perpendicular magnetic tunnel junctions

    Science.gov (United States)

    Piotrowski, Stephan K.; Bapna, Mukund; Oberdick, Samuel D.; Majetich, Sara A.; Li, Mingen; Chien, C. L.; Ahmed, Rizvi; Victora, R. H.

    2016-07-01

    Magnetic tunnel junctions with perpendicular magnetic anisotropy are investigated using a conductive atomic force microscope. The 1.23 -nm Co40Fe40B20 recording layer coercivity exhibits a size dependence which suggests single-domain behavior for diameters ≤100 nm. Focusing on devices with diameters smaller than 100 nm, we determine the effect of voltage and size on the effective device anisotropy Keff using two different techniques. Keff is extracted both from distributions of the switching fields of the recording and reference layers and from measurement of thermal fluctuations of the recording layer magnetization when a field close to the switching field is applied. The results from both sets of measurements reveal that Keff increases monotonically with decreasing junction diameter, consistent with the size dependence of the demagnetization energy density. We demonstrate that Keff can be controlled with a voltage down to the smallest size measured, 64 nm.

  1. Vector spin modeling for magnetic tunnel junctions with voltage dependent effects

    Energy Technology Data Exchange (ETDEWEB)

    Manipatruni, Sasikanth, E-mail: sasikanth.manipatruni@intel.com; Nikonov, Dmitri E.; Young, Ian A. [Exploratory Integrated Circuits, Components Research, Intel Corp., Hillsboro, Oregon 97124 (United States)

    2014-05-07

    Integration and co-design of CMOS and spin transfer devices requires accurate vector spin conduction modeling of magnetic tunnel junction (MTJ) devices. A physically realistic model of the MTJ should comprehend the spin torque dynamics of nanomagnet interacting with an injected vector spin current and the voltage dependent spin torque. Vector spin modeling allows for calculation of 3 component spin currents and potentials along with the charge currents/potentials in non-collinear magnetic systems. Here, we show 4-component vector spin conduction modeling of magnetic tunnel junction devices coupled with spin transfer torque in the nanomagnet. Nanomagnet dynamics, voltage dependent spin transport, and thermal noise are comprehended in a self-consistent fashion. We show comparison of the model with experimental magnetoresistance (MR) of MTJs and voltage degradation of MR with voltage. Proposed model enables MTJ circuit design that comprehends voltage dependent spin torque effects, switching error rates, spin degradation, and back hopping effects.

  2. Anisotropy induced Kondo splitting in a mechanically stretched molecular junction: A first-principles based study

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Xiaoli; Hou, Dong, E-mail: houdong@ustc.edu.cn [Hefei National Laboratory for Physical Sciences at the Microscale and Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026 (China); Zheng, Xiao, E-mail: xz58@ustc.edu.cn [Hefei National Laboratory for Physical Sciences at the Microscale and Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026 (China); Guizhou Provincial Key Laboratory of Computational Nano-Material Science, Institute of Applied Physics, Guizhou Normal College, Guiyang, Guizhou 550018 (China); Yan, YiJing [Hefei National Laboratory for Physical Sciences at the Microscale, iChEM (Collaborative Innovation Center of Chemistry for Energy Materials), University of Science and Technology of China, Hefei, Anhui 230026 (China); Department of Chemistry, Hong Kong University of Science and Technology, Hong Kong (China)

    2016-01-21

    The magnetic anisotropy and Kondo phenomena in a mechanically stretched magnetic molecular junction are investigated by combining the density functional theory (DFT) and hierarchical equations of motion (HEOM) approach. The system is comprised of a magnetic complex Co(tpy–SH){sub 2} sandwiched between adjacent gold electrodes, which is mechanically stretched in experiments done by Parks et al. [Science 328, 1370 (2010)]. The electronic structure and mechanical property of the stretched system are investigated via the DFT calculations. The HEOM approach is then employed to characterize the Kondo resonance features, based on the Anderson impurity model parameterized from the DFT results. It is confirmed that the ground state prefers the S = 1 local spin state. The structural properties, the magnetic anisotropy, and corresponding Kondo peak splitting in the axial stretching process are systematically evaluated. The results reveal that the strong electron correlations and the local magnetic properties of the molecule magnet are very sensitive to structural distortion. This work demonstrates that the combined DFT+HEOM approach could be useful in understanding and designing mechanically controlled molecular junctions.

  3. Low frequency noise peak near magnon emission energy in magnetic tunnel junctions

    Directory of Open Access Journals (Sweden)

    Liang Liu

    2014-12-01

    Full Text Available We report on the low frequency (LF noise measurements in magnetic tunnel junctions (MTJs below 4 K and at low bias, where the transport is strongly affected by scattering with magnons emitted by hot tunnelling electrons, as thermal activation of magnons from the environment is suppressed. For both CoFeB/MgO/CoFeB and CoFeB/AlOx/CoFeB MTJs, enhanced LF noise is observed at bias voltage around magnon emission energy, forming a peak in the bias dependence of noise power spectra density, independent of magnetic configurations. The noise peak is much higher and broader for unannealed AlOx-based MTJ, and besides Lorentzian shape noise spectra in the frequency domain, random telegraph noise (RTN is visible in the time traces. During repeated measurements the noise peak reduces and the RTN becomes difficult to resolve, suggesting defects being annealed. The Lorentzian shape noise spectra can be fitted with bias-dependent activation of RTN, with the attempt frequency in the MHz range, consistent with magnon dynamics. These findings suggest magnon-assisted activation of defects as the origin of the enhanced LF noise.

  4. Low frequency noise peak near magnon emission energy in magnetic tunnel junctions

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Liang; Xiang, Li; Guo, Huiqiang; Wei, Jian, E-mail: weijian6791@pku.edu.cn [International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China and Collaborative Innovation Center of Quantum Matter, Beijing (China); Li, D. L.; Yuan, Z. H.; Feng, J. F., E-mail: jiafengfeng@iphy.ac.cn; Han, X. F. [Beijing National Laboratory of Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Coey, J. M. D. [CRANN and School of Physics, Trinity College, Dublin 2 (Ireland)

    2014-12-15

    We report on the low frequency (LF) noise measurements in magnetic tunnel junctions (MTJs) below 4 K and at low bias, where the transport is strongly affected by scattering with magnons emitted by hot tunnelling electrons, as thermal activation of magnons from the environment is suppressed. For both CoFeB/MgO/CoFeB and CoFeB/AlO{sub x}/CoFeB MTJs, enhanced LF noise is observed at bias voltage around magnon emission energy, forming a peak in the bias dependence of noise power spectra density, independent of magnetic configurations. The noise peak is much higher and broader for unannealed AlO{sub x}-based MTJ, and besides Lorentzian shape noise spectra in the frequency domain, random telegraph noise (RTN) is visible in the time traces. During repeated measurements the noise peak reduces and the RTN becomes difficult to resolve, suggesting defects being annealed. The Lorentzian shape noise spectra can be fitted with bias-dependent activation of RTN, with the attempt frequency in the MHz range, consistent with magnon dynamics. These findings suggest magnon-assisted activation of defects as the origin of the enhanced LF noise.

  5. Magnetically Controlled Electronic Transport Properties of a Ferromagnetic Junction on the Surface of a Topological Insulator

    Science.gov (United States)

    Liu, Zheng-Qin; Wang, Rui-Qiang; Deng, Ming-Xun; Hu, Liang-Bin

    2015-06-01

    We have investigated the transport properties of the Dirac fermions through a ferromagnetic barrier junction on the surface of a strong topological insulator. The current-voltage characteristic curve and the tunneling conductance are calculated theoretically. Two interesting transport features are predicted: observable negative differential conductances and linear conductances tunable from unit to nearly zero. These features can be magnetically manipulated simply by changing the spacial orientation of the magnetization. Our results may contribute to the development of high-speed switching and functional applications or electrically controlled magnetization switching. Supported by National Natural Science Foundation of China under Grant Nos. 11174088, 11175067, 11274124

  6. Assisted Writing in Spin Transfer Torque Magnetic Tunnel Junctions

    Science.gov (United States)

    Ganguly, Samiran; Ahmed, Zeeshan; Datta, Supriyo; Marinero, Ernesto E.

    2015-03-01

    Spin transfer torque driven MRAM devices are now in an advanced state of development, and the importance of reducing the current requirement for writing information is well recognized. Different approaches to assist the writing process have been proposed such as spin orbit torque, spin Hall effect, voltage controlled magnetic anisotropy and thermal excitation. In this work,we report on our comparative study using the Spin-Circuit Approach regarding the total energy, the switching speed and energy-delay products for different assisted writing approaches in STT-MTJ devices using PMA magnets.

  7. Modulation of spin transfer torque amplitude in double barrier magnetic tunnel junctions

    Energy Technology Data Exchange (ETDEWEB)

    Clément, P.-Y.; Baraduc, C., E-mail: claire.baraduc@cea.fr; Chshiev, M.; Diény, B. [Univ. Grenoble Alpes, INAC-SPINTEC, F-38000 Grenoble (France); CNRS, INAC-SPINTEC, F-38000 Grenoble (France); CEA, INAC-SPINTEC, F-38000 Grenoble (France); Ducruet, C. [Crocus-Technology, 5, Place Robert Schuman, F-38054 Grenoble (France); Vila, L. [Univ. Grenoble Alpes, INAC-SP2M, F-38000 Grenoble, France and CEA, INAC-SP2M, F-38000 Grenoble (France)

    2015-09-07

    Magnetization switching induced by spin transfer torque is used to write magnetic memories (Magnetic Random Access Memory, MRAM) but can be detrimental to the reading process. It would be quite convenient therefore to modulate the efficiency of spin transfer torque. A solution is adding an extra degree of freedom by using double barrier magnetic tunnel junctions with two spin-polarizers, with controllable relative magnetic alignment. We demonstrate, for these structures, that the amplitude of in-plane spin transfer torque on the middle free layer can be efficiently tuned via the magnetic configuration of the electrodes. Using the proposed design could thus pave the way towards more reliable read/write schemes for MRAM. Moreover, our results suggest an intriguing effect associated with the out-of-plane (field-like) spin transfer torque, which has to be further investigated.

  8. Modulation of spin transfer torque amplitude in double barrier magnetic tunnel junctions

    Science.gov (United States)

    Clément, P.-Y.; Baraduc, C.; Ducruet, C.; Vila, L.; Chshiev, M.; Diény, B.

    2015-09-01

    Magnetization switching induced by spin transfer torque is used to write magnetic memories (Magnetic Random Access Memory, MRAM) but can be detrimental to the reading process. It would be quite convenient therefore to modulate the efficiency of spin transfer torque. A solution is adding an extra degree of freedom by using double barrier magnetic tunnel junctions with two spin-polarizers, with controllable relative magnetic alignment. We demonstrate, for these structures, that the amplitude of in-plane spin transfer torque on the middle free layer can be efficiently tuned via the magnetic configuration of the electrodes. Using the proposed design could thus pave the way towards more reliable read/write schemes for MRAM. Moreover, our results suggest an intriguing effect associated with the out-of-plane (field-like) spin transfer torque, which has to be further investigated.

  9. Enhancement of thermal spin transfer torque by double-barrier magnetic tunnel junctions with a nonmagnetic metal spacer

    Science.gov (United States)

    Chen, C. H.; Tseng, P.; Yang, Y. Y.; Hsueh, W. J.

    2017-01-01

    Enhancement of thermal spin transfer torque in a double-barrier magnetic tunnel junction with a nonmagnetic-metal spacer is proposed in this study. The results indicate that, given the same temperature difference, thermal spin transfer torque and charge current density for the proposed double barrier magnetic tunnel junction configuration can be approximately twice as much as that of the traditional single-barrier magnetic tunnel junctions. This enhancement can be attributed to the resonant tunneling mechanism in the double-barrier structure.

  10. Josephson critical current of long SNS junctions in the presence of a magnetic field

    Science.gov (United States)

    Meier, Hendrik; Fal'Ko, Vladimir I.; Glazman, Leonid I.

    We evaluate the Josephson critical current of a long and wide two-dimensional superconductor-normal metal-superconductor (SNS) junction, taking into account the effect of electron reflection off the side edges of the junction. Considering clean junctions, we find that the effect of edges alters the usual Fraunhofer-like dependence of the Josephson critical current Ic on the magnetic flux Φ. At relatively weak fields, B edge effect lifts zeros of the Ic (Φ) dependence and gradually shifts the maxima of that function by Φ0 / 2 . (Here W is the width of the junction and Φ0 the magnetic flux quantum.) At higher fields, B >~Φ0 /W2 , the edge effect leads to an accelerated decay of the critical current Ic (Φ) with increasing Φ. Our results are robust with respect to the roughness of realistic boundaries. Finally, we discuss the role of mesoscopic fluctuations of Ic (Φ) originating from the scattering off the edges, and compare our findings to recent experiments.

  11. Interface characterization of epitaxial Fe/MgO/Fe magnetic tunnel junctions.

    Science.gov (United States)

    Wang, S G; Ward, R C C; Hesjedal, T; Zhang, X G; Wang, C; Kohn, A; Ma, Q L; Zhang, Jia; Liu, H F; Han, X F

    2012-02-01

    Following predictions by first-principles theory of a huge tunnel magnetoresistance (TMR) effect in epitaxial Fe/MgO/Fe magnetic tunnel junctions (MTJs), measured magnetoresistance (MR) ratios of about 200% at room temperature (RT) have been reported in MgO-based epitaxial MTJs. Recently, a MR ratio of about 600% has been reported at RT in MgO-based MTJs prepared by magnetron sputtering, using amorphous CoFeB as the ferromagnetic electrode. These MTJs show great potential for application in spintronic devices. Fully epitaxial MTJs are excellent model systems that enhance our understanding of the spin-dependent tunneling process as the interface is well defined and can be fully characterized. Both theoretical calculations and experimental results clearly indicate that the interfacial structure plays a crucial role in the coherent tunneling across a single crystal MgO barrier, especially in epitaxial MgO-based MTJs grown by molecular beam epitaxy (MBE). Surface X-ray diffraction, Auger electron spectroscopy, X-ray absorption spectra, and X-ray magnetic circular dichroism techniques have been reported previously for interface characterization. However, no consistent viewpoint has been reached on the interfacial structures (such as FeO layer formation at the bottom Fe/MgO interface), and it is still an open issue. In this article, our recent studies on the interface characterization of MgO-based epitaxial MTJs by X-ray photoelectron spectroscopy, high resolution transmission electron microscopy, and spin-dependent tunneling spectroscopy, will be presented.

  12. Influence of spin-orbit interaction within the insulating barrier on the electron transport in magnetic tunnel junctions

    Science.gov (United States)

    Vedyayev, A.; Ryzhanova, N.; Strelkov, N.; Titova, M.; Chshiev, M.; Rodmacq, B.; Auffret, S.; Cuchet, L.; Nistor, L.; Dieny, B.

    2017-02-01

    We present a theory of the anisotropy of tunneling magnetoresistance (ATMR) phenomenon in magnetic tunnel junctions (MTJs) attributed to Rashba spin-orbit interaction in the insulating barrier. ATMR represents the difference of tunnel magnetoresistance (TMR) amplitude measured with in-plane and out-of-plane magnetic configurations. It is demonstrated that within the spin-polarized free-electron model the change of conductance associated with the ATMR is exactly twice the change of conductance measured at full saturation (i.e., in parallel configuration of magnetizations) between in-plane and out-of-plane configuration, i.e., the tunneling anisotropic magnetoresistance (TAMR). Both ATMR and TAMR are closely related to the TMR amplitude and spin-orbit constant. The predicted ATMR phenomenon is confirmed experimentally, showing a few percent value in the case of the widely studied CoFeB/MgO/CoFeB based MTJ.

  13. Anomalous Tunnel Magnetoresistance and Spin Transfer Torque in Magnetic Tunnel Junctions with Embedded Nanoparticles

    Science.gov (United States)

    Useinov, Arthur; Ye, Lin-Xiu; Useinov, Niazbeck; Wu, Te-Ho; Lai, Chih-Huang

    2015-12-01

    The tunnel magnetoresistance (TMR) in the magnetic tunnel junction (MTJ) with embedded nanoparticles (NPs) was calculated in range of the quantum-ballistic model. The simulation was performed for electron tunneling through the insulating layer with embedded magnetic and non-magnetic NPs within the approach of the double barrier subsystem connected in parallel to the single barrier one. This model can be applied for both MTJs with in-plane magnetization and perpendicular one. We also calculated the in-plane component of the spin transfer torque (STT) versus the applied voltage in MTJs with magnetic NPs and determined that its value can be much larger than in single barrier system (SBS) for the same tunneling thickness. The reported simulation reproduces experimental data of the TMR suppression and peak-like TMR anomalies at low voltages available in leterature.

  14. Asymmetric voltage behavior of the tunnel magnetoresistance in double barrier magnetic tunnel junctions

    KAUST Repository

    Useinov, Arthur

    2012-06-01

    In this paper, we study the value of the tunnel magnetoresistance (TMR) as a function of the applied voltage in double barrier magnetic tunnel junctions (DMTJs) with the left and right ferromagnetic (FM) layers being pinned and numerically estimate the possible difference of the TMR curves for negative and positive voltages in the homojunctions (equal barriers and electrodes). DMTJs are modeled as two single barrier junctions connected in series with consecutive tunneling (CST). We investigated the asymmetric voltage behavior of the TMR for the CST in the range of a general theoretical model. Significant asymmetries of the experimental curves, which arise due to different annealing regimes, are mostly explained by different heights of the tunnel barriers and asymmetries of spin polarizations in magnetic layers. © (2012) Trans Tech Publications.

  15. Edge effects in the magnetic interference pattern of a ballistic SNS junction

    Science.gov (United States)

    Meier, Hendrik; Fal'ko, Vladimir I.; Glazman, Leonid I.

    2016-05-01

    We investigate the Josephson critical current Ic(Φ ) of a wide superconductor-normal metal-superconductor (SNS) junction as a function of the magnetic flux Φ threading it. Electronic trajectories reflected from the side edges alter the function Ic(Φ ) as compared to the conventional Fraunhofer-type dependence. At weak magnetic fields, B ≲Φ0/d2 , the edge effect lifts zeros in Ic(Φ ) and gradually shifts the minima of that function toward half-integer multiples of the flux quantum. At B >Φ0/d2 , the edge effect leads to an accelerated decay of the critical current Ic(Φ ) with increasing Φ . At larger fields, eventually, the system is expected to cross into a regime of "classical" mesoscopic fluctuations that is specific for wide ballistic SNS junctions with rough edges.

  16. Investigation of magnetic sensor properties of magnetic tunnel junctions with superparamagnetic free layer at low frequencies for biomedical imaging applications

    Science.gov (United States)

    Ishikawa, Kyohei; Oogane, Mikihiko; Fujiwara, Kousuke; Jono, Junichi; Tsuchida, Masaaki; Ando, Yasuo

    2016-12-01

    The magnetic sensor properties of magnetic tunnel junctions (MTJs) with a superparamagnetic (SP) free layer were systematically investigated at low frequencies (<10 Hz). We prepared four varieties of MTJs with various SP properties by changing the annealing temperature. The temperature dependence of magnetoresistance curves and the signal/noise property at 285 K were evaluated. We found that the SP free layer has the advantage of detecting very small and low-frequency AC magnetic fields compared with a ferromagnetic free layer. The SP free layer strongly suppressed magnetic 1/f noise at low frequencies and expressed a very linear response to a small magnetic field. The obtained properties in MTJs with the SP free layer are suitable for detecting biomagnetic fields. The detectivity was 111 nT at low frequencies (from 0.1 to 10 Hz), which is one of the highest values in single-MTJ sensors.

  17. Perturbation calculation of magnetic field dependence of fluxon dynamics in long inline and overlap Josephson junctions

    DEFF Research Database (Denmark)

    Levring, O. A.; Pedersen, Niels Falsig; Samuelsen, Mogens Rugholm

    1983-01-01

    The motion of a single fluxon in long Josephson-junctions of overlap and inline geometries is investigated in the presence of an applied external magnetic field. The form of the first zero-field step for various parameters is given in closed analytic forms in both cases, and the differences and s...... and similarities between the two geometries are emphasized. Journal of Applied Physics is copyrighted by The American Institute of Physics....

  18. AlOx barrier growth in magnetic tunnel junctions for sensor applications

    Science.gov (United States)

    Knudde, S.; Farinha, G.; Leitao, D. C.; Ferreira, R.; Cardoso, S.; Freitas, P. P.

    2016-08-01

    Magnetic tunnel junction (MTJ) research has been focused on MgO-based crystalline structures due to high tunnel magnetoresistance (TMR), despite requiring a more severe process control than previous generations of MTJ stacks based on amorphous barriers (e.g. AlOx). In this work, we study the electrical transport properties in AlOx barriers in MTJ sensors fabricated using Ion beam sputtering and remote plasma oxidation. Amorphous barriers were prepared from oxidation of thin Al films, deposited in single step barrier (SSB-Al 1 nm/oxidation) or double step barrier (DSB-Al 0.5 nm/oxidation/Al 0.5 nm/oxidation) structures. We show tunable resistance-area products (RxA) ranging from ≈ 10 Ω μ m2 (suited for nano devices) up to ≈ 100 k Ω μ m2 (suited for large area sensors) with TMR above 30%. For all geometries studied, the structures have a coercivity free linear response and require none or one annealing step. This makes them very competitive for all industrial applications where the TMR level is not the dominant specification to meet.

  19. Millikelvin cooling by heavy-fermion-based tunnel junctions

    Energy Technology Data Exchange (ETDEWEB)

    Prest, Martin; Min, Gao, E-mail: Min@cardiff.ac.uk [School of Engineering, Cardiff University, Cardiff CF24 3AA (United Kingdom); Whall, Terry [Department of Physics, University of Warwick, Coventry CV4 7AL (United Kingdom)

    2015-12-28

    This paper addresses a high-performance electron-tunneling cooler based on a novel heavy-fermion/insulator/superconductor junction for millikelvin cooling applications. We show that the cooling performance of an electronic tunneling refrigerator could be significantly improved using a heavy-fermion metal to replace the normal metal in a conventional normal metal/insulator/superconductor junction. The calculation, based on typical parameters, indicates that, for a bath temperature of 300 mK, the minimum cooling temperature of an electron tunneling refrigerator is reduced from around 170 mK to below 50 mK if a heavy-fermion metal is employed in place of the normal metal. The improved cooling is attributed to an enhancement in electron tunneling due to the existence of a resonant density of states at the Fermi level.

  20. Free- and reference-layer magnetization modes versus in-plane magnetic field in a magnetic tunnel junction with perpendicular magnetic easy axis

    Science.gov (United States)

    Mazraati, Hamid; Le, Tuan Q.; Awad, Ahmad A.; Chung, Sunjae; Hirayama, Eriko; Ikeda, Shoji; Matsukura, Fumihiro; Ohno, Hideo; Åkerman, Johan

    2016-09-01

    We study the magnetodynamic modes of a magnetic tunnel junction with perpendicular magnetic easy axis (p-MTJ) in in-plane magnetic fields using device-level ferromagnetic resonance spectroscopy. We compare our experimental results to those of micromagnetic simulations of the entire p-MTJ. Using an iterative approach to determine the material parameters that best fit our experiment, we find excellent agreement between experiments and simulations in both the static magnetoresistance and magnetodynamics in the free and reference layers. From the micromagnetic simulations, we determine the spatial mode profiles, the localization of the modes and, as a consequence, their distribution in the frequency domain due to the inhomogeneous internal field distribution inside the p-MTJ under different applied field regimes. We also conclude that the excitation mechanism is a combination of the microwave voltage modulated perpendicular magnetic anisotropy, the microwave Oersted field, and the spin-transfer torque generated by the microwave current.

  1. Molecule-based magnets

    Indian Academy of Sciences (India)

    J V Yakhmi

    2009-06-01

    The conventional magnetic materials used in current technology, such as, Fe, Fe2O3, Cr2O3, SmCo5, Nd2Fe14B etc are all atom-based, and their preparation/processing require high temperature routes. Employing self-assembly methods, it is possible to engineer a bulk molecular material with long-range magnetic order, mainly because one can play with the weak intermolecular interactions. Since the first successful synthesis of molecular magnets in 1986, a large variety of them have been synthesized, which can be categorized on the basis of the chemical nature of the magnetic units involved: organic-, metal-based systems, heterobimetallic assemblies, or mixed organic–inorganic systems. The design of molecule-based magnets has also been extended to the design of poly-functional molecular magnets, such as those exhibiting second-order optical nonlinearity, liquid crystallinity, or chirality simultaneously with long-range magnetic order. Solubility, low density and biocompatibility are attractive features of molecular magnets. Being weakly coloured, unlike their opaque classical magnet ‘cousins’ listed above, possibilities of photomagnetic switching exist. Persistent efforts also continue to design the ever-elusive polymer magnets towards applications in industry. While providing a brief overview of the field of molecular magnetism, this article highlights some recent developments in it, with emphasis on a few studies from the author’s own lab.

  2. Structural and Electrical Properties of Heteroepitaxial Magnetic Oxide Junction Diode Fabricated by Pulsed Laser Deposition

    Science.gov (United States)

    Li, M. K.; Wong, K. H.

    2010-11-01

    Heteroepitaxial junctions formed by p-type strontium doped lanthanum manganite and n-type cobalt doped titanium dioxide were fabricated on LaAlO3 (100) substrates by pulsed laser deposition. The La0.7Sr0.3MnO3 (LSMO) layers were grown at 650° C and under 150 mTorr ambient oxygen pressure. They showed room temperature ferromagnetism and metallic-like electrical conduction with a resistivity of 0.015 ohm cm at 300 K. The CoxTi1-xO2[x = 0.05 and 0.1] (CTO), which, at anatase phase, was reported as a wide-band-gap dilute magnetic semiconductor, was deposited on the LSMO film surface at 600° C with an ambient oxygen pressure of 20 mTorr. The as-grown CTO films exhibited pure anatase crystalline phase and semiconductor-like conduction. Under optimized fabrication conditions the CTO/LSMO junction revealed a heteroepitaxial relationship of (004)CTO‖‖(001)LSMO‖‖(001)LAO. Electrical characterization of these p-n junctions yielded excellent rectifying characteristics with a current rectifying ratio over 1000 at room temperature. The electrical transport across these diodes was dominated by diffusion current at low current (low bias voltage) regime and by recombination current at high current (high bias voltage) regime. Our results have demonstrated an all-oxide spintronic junction diode with good transport property. The simultaneous of electrical and magnetic modulation in a diode junction is therefore potentially realizable.

  3. Quench-induced trapping of magnetic flux in annular Josephson junctions

    DEFF Research Database (Denmark)

    Aarøe, Morten; Monaco, R.; Rivers, R.;

    2008-01-01

    over 4 orders of magnitude. After the quench the result of the spontaneous production of topological defects, trapped fluxons, is unambiguously observed as zero-field steps in the DC I-V characteristic of the junction. A power-law scaling behavior of trapping probability versus quench rate is found...... with a critical exponent of 0.5 (within experimental error). The main experimental challenges are to generate many identical quenches with accurate cooling rate, to automate data analysis and acquisition, and to suppress external magnetic fields and noise by passive magnetic shielding and compensation....

  4. Influence of Josephson current second harmonic on stability of magnetic flux in long junctions

    Science.gov (United States)

    Atanasova, P. K. H.; Boyadjiev, T. L.; Shukrinov, Y. U. M.; Zemlyanaya, E. V.; Seidel, P.

    2010-11-01

    We study the long Josephson junction (LJJ) model which takes into account the second harmonic of the Fourier expansion of Josephson current. The dependence of the static magnetic flux distributions on parameters of the model are investigated numerically. Stability of the static solutions is checked by the sign of the smallest eigenvalue of the associated Sturm-Liouville problem. New solutions which do not exist in the traditional model, have been found. Investigation of the influence of second harmonic on the stability of magnetic flux distributions for main solutions is performed.

  5. Magnetic electron focusing and tuning of the electron current with a pn-junction

    Energy Technology Data Exchange (ETDEWEB)

    Milovanović, S. P., E-mail: slavisa.milovanovic@uantwerpen.be; Ramezani Masir, M., E-mail: mrmphys@gmail.com; Peeters, F. M., E-mail: francois.peeters@uantwerpen.be [Departement Fysica, Universiteit Antwerpen, Groenenborgerlaan 171, B-2020 Antwerpen (Belgium)

    2014-01-28

    Transverse magnetic focusing properties of graphene using a ballistic four terminal structure are investigated. The electric response is obtained using the semiclassical billiard model. The transmission exhibits pronounced peaks as a consequence of skipping orbits at the edge of the structure. When we add a pn-junction between the two probes, snake states along the pn-interface appear. Injected electrons are guided by the pn-interface to one of the leads depending on the value of the applied magnetic field. Oscillations in the resistance are found depending on the amount of particles that end up in each lead.

  6. Fe3O4/MgO/Fe Heteroepitaxial Structures for Magnetic Tunnel Junctions

    Energy Technology Data Exchange (ETDEWEB)

    Orna, J. [University of Zaragoza, Spain; Morellon, Luis [University of Zaragoza, Spain; Algarabel, Pedro A. [University of Zaragoza, Spain; Pardo, J. A. [University of Zaragoza, Spain; Sangiao, S [Instituto de Nanociencia de Aragón, Universidad de Zaragoza, Zaragoza, 50009 Spain; Magen, C [Oak Ridge National Laboratory (ORNL); Snoeck, E. [CEMES-CNRS, Toulouse, France; De Teresa, J M [Instituto de Ciencia de Materiales de Aragón, Universidad de Zaragoza-CSIC, Zaragoza, 50009 Spain; Ibarra, M. Ricardo [University of Zaragoza, Spain

    2008-01-01

    In this work we report the growth and structural and magnetic characterization of heteroepitaxial Fe O/MgO/Fe junctions. All three layers have been deposited by pulsed laser deposition. Combining High Resolution Transmission Electron Microscopy and X-ray results, we have obtained for the heterostructure the epitaxy relation MgO(001) [100]//Fe O(001)[100]/MgO(001) [100]/Fe(001)[110]. All interfaces appear very sharp with relatively small root-mean square (rms) roughness, 0.2 nm. The magnetic coupling between Fe O and Fe electrodes is also very small, 0.03 mJ/

  7. High sensitivity microwave detection using a magnetic tunnel junction in the absence of an external applied magnetic field

    Energy Technology Data Exchange (ETDEWEB)

    Gui, Y. S.; Bai, L. H.; Hu, C.-M. [Department of Physics and Astronomy, University of Manitoba, Winnipeg, Manitoba R3T 2N2 (Canada); Xiao, Y.; Guo, H. [Department of Physics, Center for the Physics of Materials, McGill University, Montreal, Quebec H3A 2T8 (Canada); Hemour, S.; Zhao, Y. P.; Wu, K. [Ecole Polytechnique de Montreal, Montreal, Quebec H3T 1J4 (Canada); Houssameddine, D. [Everspin Technologies, 1347 N. Alma School Road, Chandler, Arizona 85224 (United States)

    2015-04-13

    In the absence of any external applied magnetic field, we have found that a magnetic tunnel junction (MTJ) can produce a significant output direct voltage under microwave radiation at frequencies, which are far from the ferromagnetic resonance condition, and this voltage signal can be increase by at least an order of magnitude by applying a direct current bias. The enhancement of the microwave detection can be explained by the nonlinear resistance/conductance of the MTJs. Our estimation suggests that optimized MTJs should achieve sensitivities for non-resonant broadband microwave detection of about 5000 mV/mW.

  8. Spin transport in nanoscale spin valves and magnetic tunnel junctions

    Science.gov (United States)

    Patibandla, Sridhar

    relaxation in high- and low-mobility materials respectively. Chapter 5 discusses the first ever reported results on the fabrication of manganese doped germanium dilute magnetic semiconductor nanowires (DMS) using electrochemical deposition techniques. The magnetic measurements conducted on these nanowires show ferromagnetism with a Curie temperature of about 220K. Chapter 6 discusses the spin transport studies conducted in nanoscale organic spin valves with tunnel barriers interposed between the ferromagnet and the organic spacer layer. Two dimensional organic spin valves with tunnel injectors were also studied and the experimental details are discussed.

  9. Probing the Influence of Thermal Spin Torque on Magnetic Tunnel Junction Switching

    Science.gov (United States)

    Phung, Timothy; Pushp, Aakash; Rettner, Charles; Hughes, Brian; Yang, See-Hun; Parkin, Stuart

    2013-03-01

    It has been established in the past few years that heat flow within a ferromagnet can induce a spin current and an associated voltage. This so called Spin Seebeck effect, initially reported in ferromagnetic metals, has also been observed in magnetic semiconductors, magnetic insulators as well as in strongly spin orbit coupled systems. An open question has been whether heat induced spin currents can be used in switching a magnetic tunnel junction (MTJ) via thermal spin torque (TST). In order to answer this question, we investigate the MTJ switching with TST induced by sharp temperature gradients on the order of 1-10 K/nm. We will describe our experimental setup and present data that show the various roles that temperature plays on the saturation magnetization of the material and on the induced spin currents that influence MTJ switching.

  10. Micromagnetic model for studies on Magnetic Tunnel Junction switching dynamics, including local current density

    Energy Technology Data Exchange (ETDEWEB)

    Frankowski, Marek, E-mail: mfrankow@agh.edu.pl; Czapkiewicz, Maciej; Skowronski, Witold; Stobiecki, Tomasz

    2014-02-15

    We present a model introducing the Landau–Lifshitz–Gilbert equation with a Slonczewski's Spin-Transfer-Torque (STT) component in order to take into account spin polarized current influence on the magnetization dynamics, which was developed as an Object Oriented MicroMagnetic Framework extension. We implement the following computations: magnetoresistance of vertical channels is calculated from the local spin arrangement, local current density is used to calculate the in-plane and perpendicular STT components as well as the Oersted field, which is caused by the vertical current flow. The model allows for an analysis of all listed components separately, therefore, the contribution of each physical phenomenon in dynamic behavior of Magnetic Tunnel Junction (MTJ) magnetization is discussed. The simulated switching voltage is compared with the experimental data measured in MTJ nanopillars.

  11. Novel compact model for multi-level spin torque magnetic tunnel junctions

    Science.gov (United States)

    Prajapati, Sanjay; Verma, Shivam; Kulkarni, Anant Aravind; Kaushik, Brajesh Kumar

    2016-10-01

    Spin-transfer torque (STT) and spin-orbit torque (SOT) based magnetic tunnel junction (MTJ) devices are emerging as strong contenders for the next generation memories. Conventional STT magneto-resistive random access memory (MRAM) offers lower power, non-volatility and CMOS process compatibility. However, higher current requirement during the write operation leads to tunnel barrier reliability issues and larger access devices. SOT-MRAM eliminates the reliability issues with strong spin polarized current (100%) and separate read/write current paths; however, the additional two access transistors in SOT-MRAM results into increased cell area. Multilevel cell (MLC) structure paves a way to circumvent the problems related to the conventional STT/SOT based MTJ devices and provides enhanced integration density at reduced cost per bit. Conventional STT/SOT-MRAM requires a unit cell area of 10-60 F2 and reported simulations have been based on available single-level MTJ compact models. However, till date no compact model exists that can capture the device physics of MLC-MTJ accurately. Hence, a novel compact model is proposed in this paper to capture the accurate device physics and behaviour of the MLC-MTJs. It is designed for MLCs with different MTJ configurations demonstrated so far, such as series and parallel free layer based MLC-MTJs. The proposed model is coded in Verilog-A, which is compatible with SPICE for circuit level simulations. The model is in close agreement with the experimental results exhibiting an average error of less than 15%.

  12. Interfacial spin-filter assisted spin transfer torque effect in Co/BeO/Co magnetic tunnel junction

    Energy Technology Data Exchange (ETDEWEB)

    Tang, Y.-H., E-mail: yhtang@cc.ncu.edu.tw; Chu, F.-C. [Department of Physics, National Central University, Jung-Li 32001, Taiwan (China)

    2015-03-07

    The first-principles calculation is employed to demonstrate the spin-selective transport properties and the non-collinear spin-transfer torque (STT) effect in the newly proposed Co/BeO/Co magnetic tunnel junction. The subtle spin-polarized charge transfer solely at O/Co interface gives rise to the interfacial spin-filter (ISF) effect, which can be simulated within the tight binding model to verify the general expression of STT. This allows us to predict the asymmetric bias behavior of non-collinear STT directly via the interplay between the first-principles calculated spin current densities in collinear magnetic configurations. We believe that the ISF effect, introduced by the combination between wurtzite-BeO barrier and the fcc-Co electrode, may open a new and promising route in semiconductor-based spintronics applications.

  13. The effect of the ferromagnetic metal layer on tunnelling conductance and magnetoresistance in double magnetic planar junctions

    Institute of Scientific and Technical Information of China (English)

    谢征微; 李伯臧; 李玉现

    2002-01-01

    Based on the free-electron approximation, we investigate the effect of the ferromagnetic metal layer on the tunnelling magnetoresistance (TMR) and tunnelling conductance (TC) in the double magnetic tunnel junctions (DMTJs)of the structure NM/FM/Ⅰ(S)/NM/Ⅰ(S)/FM/NM, where FM, NM and Ⅰ(S) represent the ferromagnetic metal, nonmagnetic metal and insulator (semiconductor), respectively. The FM, Ⅰ(S) and inner NM layers are of finite thickness,while the thickness of the outer NM layer is infinite. The calculated results show that, due to the spin-dependent interfacial potential barriers caused by electronic band mismatch between the various magnetic and nonmagnetic layers,the dependences of the TMR and TC on the thicknesses of the FM layers exhibit oscillations, and a much higher TMR can be obtained for suitable thicknesses of FM layers.

  14. Output voltage calculations in double barrier magnetic tunnel junctions with asymmetric voltage behavior

    KAUST Repository

    Useinov, Arthur

    2011-10-22

    In this paper we study the asymmetric voltage behavior (AVB) of the tunnel magnetoresistance (TMR) for single and double barrier magnetic tunnel junctions (MTJs) in range of a quasi-classical free electron model. Numerical calculations of the TMR-V curves, output voltages and I-V characteristics for negative and positive values of applied voltages were carried out using MTJs with CoFeB/MgO interfaces as an example. Asymmetry of the experimental TMR-V curves is explained by different values of the minority and majority Fermi wave vectors for the left and right sides of the tunnel barrier, which arises due to different annealing regimes. Electron tunneling in DMTJs was simulated in two ways: (i) Coherent tunneling, where the DMTJ is modeled as one tunnel system and (ii) consecutive tunneling, where the DMTJ is modeled by two single barrier junctions connected in series. © 2012 Elsevier B.V. All rights reserved.

  15. Graphene-Based Josephson-Junction Single-Photon Detector

    Science.gov (United States)

    Walsh, Evan D.; Efetov, Dmitri K.; Lee, Gil-Ho; Heuck, Mikkel; Crossno, Jesse; Ohki, Thomas A.; Kim, Philip; Englund, Dirk; Fong, Kin Chung

    2017-08-01

    We propose to use graphene-based Josephson junctions (GJJs) to detect single photons in a wide electromagnetic spectrum from visible to radio frequencies. Our approach takes advantage of the exceptionally low electronic heat capacity of monolayer graphene and its constricted thermal conductance to its phonon degrees of freedom. Such a system could provide high-sensitivity photon detection required for research areas including quantum information processing and radio astronomy. As an example, we present our device concepts for GJJ single-photon detectors in both the microwave and infrared regimes. The dark count rate and intrinsic quantum efficiency are computed based on parameters from a measured GJJ, demonstrating feasibility within existing technologies.

  16. Influence of exchange bias on magnetic losses in CoFeB/MgO/CoFeB tunnel junctions

    Science.gov (United States)

    Stearrett, Ryan; Wang, W. G.; Kou, Xiaoming; Feng, J. F.; Coey, J. M. D.; Xiao, J. Q.; Nowak, E. R.

    2012-07-01

    The strength of the exchange bias field is found to influence the low-frequency magnetoresistive noise associated with the magnetic reference layer in sputtered-deposited and electron-beam-evaporated CoFeB/MgO/CoFeB tunnel junctions. The noise is due to magnetic losses arising in the reference layer. The losses are parameterized by a phase lag ɛ which exhibits a nontrivial dependence on the externally applied field. The general trend found among all devices is that the losses are largest in the antiparallel state. The effect of exchange bias on the reference layer's noise is investigated at a field corresponding to maximum resistance susceptibility, Href. Higher values for the phase lag at Href, ɛref, are found in devices having a large exchange bias field. We also observed that Href and ɛref are larger in devices having thicker seed layers. This characteristic is also evident in double-barrier magnetic tunnel junctions. Prolonged thermal annealing is found to decrease ɛref, reduce Href, and alter the field profile of the resistance susceptibility of the reference layer to resemble that of a more magnetically soft behavior. In addition to its impact on the magnetoresistive noise, the incorporation of exchange bias layers into the materials stack also affects the tunneling magnetoresistance ratio with higher values found at smaller exchange bias fields. We attribute the magnitude of the magnetic losses, and hence the magnetoresistive noise, from the reference layer to disorder in its magnetic microstructure. Our results indicate that the nature and degree of disorder are correlated to the strength of the exchange bias coupling. The origin of this correlation may be due to a competition between different microstructures among various layers, one that leads to coherent tunneling (large tunneling magnetoresistance) in MgO-based tunneling devices and the other which promotes strong exchange bias coupling. A decrease in the exchange bias either through degradation

  17. Observation of thermal spin-transfer torque via ferromagnetic resonance in magnetic tunnel junctions

    Science.gov (United States)

    Zhang, Zhaohui; Bai, Lihui; Chen, Xiaobin; Guo, Hong; Fan, X. L.; Xue, D. S.; Houssameddine, D.; Hu, C.-M.

    2016-08-01

    The thermal spin-transfer torque (TSTT) in magnetic tunneling junctions (MTJs) was systematically studied using electrical detection of ferromagnetic resonance (FMR). Evidence for the existence of TSTT in MTJs is observed. A temperature difference was applied across an MTJ acting as a TSTT on the free layer of the MTJ. The FMR of the free layer was then excited by a microwave current and electrically detected as a dc voltage. We found that the FMR line shape was changed by the TSTT, indicated by the ratio of dispersive and Lorentz components of the FMR spectra (D /L ). D /L increases by increasing the temperature difference. In addition, we analyze the magnetization orientation dependence of TSTT and provide solid evidence that this dependence differs from the magnetization orientation dependence of spin-transfer torque driven by a dc bias.

  18. Fabrication of superconducting tunnel junctions with embedded coil for applying magnetic field

    Science.gov (United States)

    Yamaguchi, Kenji; Nakagawa, Hiroshi; Aoyagi, Masahiro; Naruse, Masato; Myoren, Hiroaki; Taino, Tohru

    2016-11-01

    We have proposed and demonstrated a superconducting tunnel junction (STJ) with an embedded coil for applying a magnetic field. The STJ was fabricated on the coil, which was embedded in a Si substrate. The coil in the Si substrate consists of superconducting microstrip lines and applies a magnetic field to the STJ to suppress the dc Josephson current. The embedded coil was designed with a line and space of 3 μm and a thickness of 120 nm. To planarize the coil, we employed chemical mechanical polishing (CMP) in our fabrication process. In this STJ, the maximum current of the embedded coil was 28 mA, which corresponded to the maximum magnetic field of 11.76 mT.

  19. Three-terminal magnetic tunneling junction device with perpendicular anisotropy CoFeB sensing layer

    Energy Technology Data Exchange (ETDEWEB)

    Honjo, H., E-mail: hr-honjou@aist.go.jp; Nebashi, R.; Tokutome, K.; Miura, S.; Sakimura, N.; Sugibayashi, T. [Green Platform Research Laboratories, NEC Corporation, Tsukuba (Japan); Fukami, S.; Kinoshita, K.; Murahata, M.; Kasai, N. [Center for Spintronics Integrated Systems, Tohoku University, Sendai (Japan); Ishihara, K. [Smart Energy Research Laboratories, NEC Corporation, Tsukuba (Japan); Ohno, H. [Center for Spintronics Integrated Systems, Tohoku University, Sendai (Japan); Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, Sendai (Japan); WPI Advanced Institute for Materials Research, Tohoku University, Sendai (Japan)

    2014-05-07

    We demonstrated read and write characteristics of a three terminal memory device with a perpendicular anisotropy-free layer of a strip of [Co/Ni] and a low-switching perpendicular-anisotropy CoFeB/MgO sensing layer. This new design of the cell results in a small cell area. The switching magnetic field of the sensing layer can be decreased by changing sputtering gas for the Ta-cap from Ar to Kr. An electron energy-loss spectroscopy analysis of the cross-section of the magnetic tunneling junction (MTJ) revealed that the boron content in CoFeB with a Kr-sputtered Ta-cap was smaller than that with an Ar-sputtered one. A change in resistance for the MTJ was observed that corresponded to the magnetic switching of the Co/Ni wire and its magnetoresistance ratio and critical current were 90% and 0.8 mA, respectively.

  20. Resonant tunnel magnetoresistance in double-barrier planar magnetic tunnel junctions

    KAUST Repository

    Useinov, A. N.

    2011-08-24

    We present a theoretical approach to calculate the spin-dependent current and tunnel magnetoresistance (TMR) in a double-barrier magnetic tunnel junction (DMTJ), in which the magnetization of the middle ferromagnetic metal layer can be aligned parallel or antiparallel in relation to the fixed magnetizations of the left and right ferromagnetic electrodes. The electron transport through the DMTJ is considered as a three-dimensional problem, taking into account all transmitting electron trajectories as well as the spin-dependent momentum conservation law. The dependence of the transmission coefficient and spin-polarized currents on the applied voltage is derived as an exact solution to the quantum-mechanical problem for the spin-polarized transport. In the range of the developed physical model, the resonant tunneling, nonresonant tunneling, and enhanced spin filtering can be explained; the simulation results are in good agreement with experimental data.

  1. Perpendicular magnetic anisotropy influence on voltage-driven spin-diode effect in magnetic tunnel junctions: A micromagnetic study

    Science.gov (United States)

    Frankowski, Marek; Chȩciński, Jakub; Skowroński, Witold; Stobiecki, Tomasz

    2017-05-01

    We study the influence of the perpendicular magnetic anisotropy on the voltage-induced ferromagnetic resonance in magnetic tunnel junctions (MTJs). An MTJ response to the applied radio-frequency voltage excitation is investigated using micromagnetic calculations with the free layer oriented both in-plane and out-of-plane. Our model allows for a quantitative description of the magnetic system parameters such as resonance frequency, sensitivity or quality factor and for a distinction between material-dependent internal damping and disorder-dependent effective damping. We find that the sensitivity abruptly increases up to three orders of magnitude near the anisotropy transition regime, while the quality factor declines due to effective damping increase. We attribute the origin of this behaviour to the changes of the exchange energy in the system, which is calculated using micromagnetic approach.

  2. Low-current-density spin-transfer switching in Gd{sub 22}Fe{sub 78}-MgO magnetic tunnel junction

    Energy Technology Data Exchange (ETDEWEB)

    Kinjo, Hidekazu, E-mail: kinjou.h-lk@nhk.or.jp; Machida, Kenji; Aoshima, Ken-ichi; Kato, Daisuke; Kuga, Kiyoshi; Kikuchi, Hiroshi; Shimidzu, Naoki [Science and Technology Research Laboratories, Japan Broadcasting Corporation (NHK), Kinuta, Setagaya, Tokyo 157-8510 (Japan); Matsui, Koichi [Department of Green and Sustainable Chemistry, Tokyo Denki University, Adachi, Tokyo 120-8551 (Japan)

    2014-05-28

    Magnetization switching of a relatively thick (9 nm) Gd-Fe free layer was achieved with a low spin injection current density of 1.0 × 10{sup 6} A/cm{sup 2} using MgO based magnetic tunnel junction devices, fabricated for light modulators. At about 560 × 560 nm{sup 2} in size, the devices exhibited a tunneling magnetoresistance ratio of 7%. This low-current switching is mainly attributed to thermally assisted spin-transfer switching in consequence of its thermal magnetic behavior arising from Joule heating.

  3. Theoretical Study of Magnetism Induced by Proximity Effect in a Ferromagnetic Josephson Junction with a Normal Metal

    Science.gov (United States)

    Hikino, Shin-ichi

    2017-09-01

    We theoretically study the magnetism induced by the proximity effect in the normal metal of ferromagnetic Josephson junction composed of two s-wave superconductors separated by ferromagnetic metal/normal metal/ferromagnetic metal junction (S/F/N/F/S junction). We calculate the magnetization in the N by solving the Eilenberger equation. We show that the magnetization arises in the N when the product of anomalous Green’s functions of the spin-triplet even-frequency odd-parity Cooper pair and spin-singlet odd-frequency odd-parity Cooper pair in the N has a finite value. The induced magnetization M(d,θ ) can be decomposed into two parts, M(d,θ ) = MI(d) + MII(d,θ ), where d is the thickness of N and θ is superconducting phase difference between two Ss. Therefore, θ dependence of M(d,θ ) allows us to control the amplitude of magnetization by changing θ. The variation of M(d,θ ) with θ is indeed the good evidence of the magnetization induced by the proximity effect, since some methods of magnetization measurement pick up total magnetization in the S/F/N/F/S junction.

  4. Tunnel magnetoresistance in magnetic tunnel junctions with ZnS barrier

    Energy Technology Data Exchange (ETDEWEB)

    Guth, M.; Da Costa, V.; Schmerber, G.; Dinia, A.; van den Berg, H. A. M.

    2001-06-01

    A first experimental evidence of a significant tunneling magnetoresistance signal of about 5% at 300 K for a magnetic tunnel junction consisting of hard and soft magnetic layers separated by a 2 nm ZnS semiconducting barrier is reported. The samples have been grown by sputtering on Si(111) substrate at room temperature and have the following structure: Fe{sub 6nm}Cu{sub 30nm}CoFe{sub 1.8nm}Ru{sub 0.8nm}CoFe{sub 3nm}ZnS{sub x}CoFe{sub 1nm}Fe{sub 4nm}Cu{sub 10nm}Ru{sub 3nm}. The hard magnetic bottom electrode consists of the artificial antiferromagnetic structure in which the rigidity is ensured by the antiferromagnetic exchange coupling between two FeCo layers through a Ru spacer layer. Barrier impedance scanning microscope (BISM) measurements reveal a good homogeneity of the barrier thickness. Electric transport measurements over square tunnel elements with lateral sizes between 3 and 100 {mu}m, exhibit a typical tunnel current{endash}voltage variations and tunnel resistance of 2{endash}3 k{Omega}{mu}m2 with small variations which never exceed a factor of 2, which is in good agreement with the BISM results. This good reproducibility of the junctions is very promising for MRAMs and transistors applications. {copyright} 2001 American Institute of Physics.

  5. Influence of a perpendicular magnetic field on the thermal depinning of a single Abrikosov vortex in a superconducting Josephson junction

    Energy Technology Data Exchange (ETDEWEB)

    Kouzoudis, D.

    1999-02-12

    The prime interest of the present research is to measure the thermal energy needed for depinning a trapped vortex when an external magnetic field is perpendicular to the plane of the junction, and thus there are Meissner currents flowing along the edge of the film. These currents introduce an additional force and the author wishes to study thermal depinning under the influence of this force. These studies are of interest because Nb junctions are used in a wide range of electronic applications. Such junctions are useful, for instance, in superconducting quantum interference devices (SQUIDs) or in vortex-flow transistors because their performance can be enhanced by tuning the parameters of the individual junctions to optimum operation values. Furthermore gated Josephson junctions can be used as Josephson field-effect transistors (JOFETs).

  6. Magnetic tunnel junctions for magnetic field sensor by using CoFeB sensing layer capped with MgO film

    Energy Technology Data Exchange (ETDEWEB)

    Takenaga, Takashi, E-mail: takenaga@leap.or.jp; Tsuzaki, Yosuke; Yoshida, Chikako; Yamazaki, Yuichi; Hatada, Akiyoshi; Nakabayashi, Masaaki; Iba, Yoshihisa; Takahashi, Atsushi; Noshiro, Hideyuki; Tsunoda, Koji; Aoki, Masaki; Furukawa, Taisuke; Fukumoto, Hiroshi; Sugii, Toshihiro [Low-power Electronics Association and Project (LEAP), Tsukuba 305-8569 (Japan)

    2014-05-07

    We evaluated MgO-based magnetic tunnel junctions (MTJs) for magnetic field sensors with spin-valve-type structures in the CoFeB sensing layer capped by an MgO film in order to obtain both top and bottom interfaces of MgO/CoFeB exhibiting interfacial perpendicular magnetic anisotropy (PMA). Hysteresis of the CoFeB sensing layer in these MTJs annealed at 275 °C was suppressed at a thickness of the sensing layer below 1.2 nm by interfacial PMA. We confirmed that the CoFeB sensing layers capped with MgO suppress the thickness dependences of both the magnetoresistance ratio and the magnetic behaviors of the CoFeB sensing layer more than that of the MTJ with a Ta capping layer. MgO-based MTJs with MgO capping layers can improve the controllability of the characteristics for magnetic field sensors.

  7. Spontaneous fluxon production in annular Josephson tunnel junctions in the presence of a magnetic field

    DEFF Research Database (Denmark)

    Monaco, Roberto; Aarøe, Morten; Mygind, Jesper;

    2008-01-01

    We report on the spontaneous production of fluxons in annular Josephson tunnel junctions during a thermal quench in the presence of a symmetry-breaking magnetic field. The dependence on field intensity B of the probability (f) over bar (1) to trap a single defect during the N-S phase transition...... depends drastically on the sample circumferences. We show that this can be understood in the framework of the same picture of spontaneous defect formation that leads to the experimentally well attested scaling behavior of (f) over bar (1) with quench rate in the absence of an external field....

  8. Mapping of single-base differences between two DNA strands in a single molecule using holliday junction nanomechanics.

    Directory of Open Access Journals (Sweden)

    Camille Brème

    Full Text Available OBJECTIVE: The aim of this work is to demonstrate a novel single-molecule DNA sequence comparison assay that is purely based on DNA mechanics. METHODS: A molecular construct that contained the two homologous but non-identical DNA sequences that were to be compared was prepared such that a four-way (Holliday junction could be formed by the formation of heteroduplexes through the inter-recombination of the strands. Magnetic tweezers were used to manipulate the force and the winding applied to this construct for inducing both the formation and the migration of a Holliday junction. The end-to-end distance of the construct was measured as a function of the winding and was used to monitor the behavior of the Holliday junction in different regions of the intra-molecular recombination. MAIN RESULTS: In the appropriate buffer, the magnet rotation induces the migration of the Holliday junction in the regions where there is no sequence difference between the recombining sequences. In contrast, even a single-base difference between the recombining sequences leads to a long-lasting blockage of the migration in the same buffer; this effect was obtained when the junction was positioned near this locus (the site of the single-base difference and forced toward the formation of heteroduplexes that comprise the locus. The migration blockages were detected through the identification of the formation of plectonemes. The detection of the presence of sequence differences and their respective mappings were obtained from the series of blockages that were detected. SIGNIFICANCE: This work presents a novel single-molecule sequence comparison assay that is based on the use of a Holliday junction as an ultra-sensitive nanomechanism; the mismatches act as blocking grains of sand in the Holliday "DNA gearbox". This approach will potentially have future applications in biotechnology.

  9. Electric-field manipulation of magnetization rotation and tunneling magnetoresistance of magnetic tunnel junctions at room temperature

    Science.gov (United States)

    Chen, Aitian; Li, Peisen; Li, Dalai; Zhao, Yonggang; Zhang, Sen; Yang, Lifeng; Liu, Yan; Zhu, Meihong; Zhang, Huiyun; Han, Xiufeng

    2015-03-01

    Recent studies on the electric-field control of tunneling magnetoresistance (TMR) have attracted considerable attention for low power consumption. So far two methods have been demonstrated for electric-field control of TMR. One method uses ferroelectric or multiferroic barriers, which is limited by low temperature. The other is nanoscale thin film magnetic tunnel junction (MTJ), but the assistance of a magnetic field is required. Therefore, electric-field control of TMR at room temperature without a magnetic field is highly desired. One promising way is to employ strain-mediated coupling in ferromagnetic/piezoelectric structure. Though MTJs/piezoelectric has been predicted by theory, experiment work is still lacking. We deposited CoFeB/AlOx/CoFeB on Pb(Mg1/3Nb2/3)0.7Ti0.3O3 (PMN-PT) ferroelectric single crystal. Under external electric fields, PMN-PT will produce a piezostrain due to piezoelectric effect, and the piezostrain transfers to ferromagnetic film to change the magnetic anisotropy. We demonstrate a reversible, continuous magnetization rotation and manipulation of TMR at room temperature by electric fields without the assistance of a magnetic field.

  10. Graphene p n junction in a quantizing magnetic field: Conductance at intermediate disorder strength

    Science.gov (United States)

    Fräßdorf, Christian; Trifunovic, Luka; Bogdanoff, Nils; Brouwer, Piet W.

    2016-11-01

    In a graphene p n junction at high magnetic field, unidirectional "snake states" are formed at the p n interface. In a clean p n junction, each snake state exists in one of the valleys of the graphene band structure, and the conductance of the junction as a whole is determined by microscopic details of the coupling between the snake states at the p n interface and quantum Hall edge states at the sample boundaries [Tworzydło et al., Phys. Rev. B 76, 035411 (2007), 10.1103/PhysRevB.76.035411]. Disorder mixes and couples the snake states. We here report a calculation of the full conductance distribution in the crossover between the clean limit and the strong-disorder limit, in which the conductance distribution is given by random matrix theory [Abanin and Levitov, Science 317, 641 (2007), 10.1126/science.1144672]. Our calculation involves an exact solution of the relevant scaling equation for the scattering matrix, and the results are formulated in terms of parameters describing the microscopic disorder potential in bulk graphene.

  11. Origins of large light induced voltage in magnetic tunnel junctions grown on semiconductor substrates

    Energy Technology Data Exchange (ETDEWEB)

    Xu, Y.; Lin, W.; Petit-Watelot, S.; Hehn, M.; Rinnert, H.; Lu, Y.; Montaigne, F.; Lacour, D.; Andrieu, S.; Mangin, S., E-mail: stephane.mangin@univ-lorraine.fr [Institut Jean Lamour, UMR CNRS 7198, Université de Lorraine- BP 70239, F-54506 Vandoeuvre-lès-Nancy Cedex (France)

    2016-01-14

    Recently, the study of interactions between electron spins and heat currents has given rise to the field of “Spin Caloritronics”. Experimental studies of these interactions have shown a possibility to combine the use of heat and light to power magnetic tunnel junction (MTJ) devices. Here we present a careful study of an MTJ device on Si substrate that can be powered entirely by light. We analyze the influence of the material properties, device geometry, and laser characteristics on the electric response of the sample. We demonstrate that by engineering the MTJ and its electrical contact, a large photovoltage reaching 100 mV can be generated. This voltage originates from the Si substrate and depends on the MTJ magnetic configuration. Finally, we discuss the origin of the photo-voltage in terms of Seebeck and photovoltaic effects.

  12. Magnetic field dependence of microwave radiation in intermediate-length Josephson junctions

    DEFF Research Database (Denmark)

    Sørensen, Mads Peter; Parmentier, R. D.; Christiansen, Peter Leth;

    1984-01-01

    Experimental measurements of current-voltage structure and emitted X-band radiation in applied magnetic field from overlap-geometry Josephson tunnel junctions of normalized length about 2 are compared with numerical simulations obtained with the use of a perturbed sine-Gordon model. The simulations...... furnish the current and field dependence of the oscillation configuration, from which can be calculated average voltages, frequencies, and power spectra. Simulation and experimental results are in good agreement with regard to the lobe structure of the height of the first zero-field step and/or second...... Fiske step in magnetic field and the field dependence of the radiation frequency within the various lobes, including details such as hysteresis between lobes. The simulations predict an alternation of the dominant frequency component with increasing field that accounts well for the experimental...

  13. Short-Term Plasticity and Long-Term Potentiation in Magnetic Tunnel Junctions: Towards Volatile Synapses

    Science.gov (United States)

    Sengupta, Abhronil; Roy, Kaushik

    2016-02-01

    Synaptic memory is considered to be the main element responsible for learning and cognition in humans. Although traditionally nonvolatile long-term plasticity changes are implemented in nanoelectronic synapses for neuromorphic applications, recent studies in neuroscience reveal that biological synapses undergo metastable volatile strengthening followed by a long-term strengthening provided that the frequency of the input stimulus is sufficiently high. Such "memory strengthening" and "memory decay" functionalities can potentially lead to adaptive neuromorphic architectures. In this paper, we demonstrate the close resemblance of the magnetization dynamics of a magnetic tunnel junction (MTJ) to short-term plasticity and long-term potentiation observed in biological synapses. We illustrate that, in addition to the magnitude and duration of the input stimulus, the frequency of the stimulus plays a critical role in determining long-term potentiation of the MTJ. Such MTJ synaptic memory arrays can be utilized to create compact, ultrafast, and low-power intelligent neural systems.

  14. Magnetic-Field-Modulated Resonant Tunneling in Ferromagnetic-Insulator-Nonmagnetic Junctions

    Science.gov (United States)

    Song, Yang; Dery, Hanan

    2014-07-01

    We present a theory for resonance-tunneling magnetoresistance (MR) in ferromagnetic-insulator-nonmagnetic junctions. The theory sheds light on many of the recent electrical spin injection experiments, suggesting that this MR effect rather than spin accumulation in the nonmagnetic channel corresponds to the electrically detected signal. We quantify the dependence of the tunnel current on the magnetic field by quantum rate equations derived from the Anderson impurity model, with the important addition of impurity spin interactions. Considering the on-site Coulomb correlation, the MR effect is caused by competition between the field, spin interactions, and coupling to the magnetic lead. By extending the theory, we present a basis for operation of novel nanometer-size memories.

  15. Electron Holography of Barrier Structures in Co/ZrAlOx/Co Magnetic Tunnel Junctions

    Institute of Scientific and Technical Information of China (English)

    ZHANG Zhe; ZHU Tao; SHEN Feng; SHENG Wen-Ting; WANG Wei-Gang; XIAO John Q; ZHANG Ze

    2005-01-01

    @@ We investigate the potential profiles and elemental distribution of barriers in Co/ZrAlOx/Co magnetic tunnel junctions (MTJs) using electron holography (EH) and scanning transmission electron microscopy. The MTJ barriers are introduced by oxidizing a bilayer consisting with a uniform 0.45-nm Al layer and a wedge-shaped Zr layer (0-2 nm). From the scanning transmission electron microscopy, AlOx and ZrOx layers are mixed together,indicating that compact AlOx layer cannot be formed in such a bilayer structure of barriers. The EH results reveal that there are no sharp interfaces between the barrier and magnetic electrodes, which may be responsible for a smaller tunnelling magnetoresistance compared with the MTJs of Co/AlOx/Co.

  16. All-Optical Switching of Magnetic Tunnel Junctions with Single Subpicosecond Laser Pulses

    Science.gov (United States)

    Chen, Jun-Yang; He, Li; Wang, Jian-Ping; Li, Mo

    2017-02-01

    The magnetic tunnel junction (MTJ) is one of the most important building blocks of spintronic logic and memory components for beyond-CMOS computation and communication. Although switching of MTJs without magnetic field has been achieved by charge and spin current injection, the operation speed is limited fundamentally by the spin-precession time to many picoseconds. We report the demonstration of ultrafast all-optical switching of an MTJ using single subpicosecond infrared laser pulses. This optically switchable MTJ uses ferrimagnetic Gd(Fe,Co) as the free layer and its switching is read out by measuring its tunneling magnetoresistance with a Δ R /R ratio of 0.6%. A switching repetition rate at MHz has been demonstrated, but the fundamental upper limit should be higher than tens of GHz rate. This result represents an important step toward integrated optospintronic devices that combines spintronics and photonics technologies to enable ultrafast conversion between fundamental information carriers of electron spins and photons.

  17. Effects of extremely low frequency magnetic fields on gap junctional intercellular communication and its mechanism

    Institute of Scientific and Technical Information of China (English)

    2002-01-01

    The study on biological effect of electromagnetic fields has been paid close attention in recent years. Gap junctional intercellular communication (GJIC) plays an important role in the maintenance of cell proliferation and differentiation, and in the multistage process of carcinogenesis. A series of researches showed that xtremely low frequency (ELF) magnetic fields not only enhance the inhibition of GJIC induced by 12-O-tetradecanoylphorbol-13-acetate, but also inhibit GJIC directly when the intensity is equal to or more than 0.4  mT, and that the mechanisms of GJIC inhibition by ELF magnetic fields are due to hyperphosphorylation of connexin 43, which is mediated by protein kinase C-activated signal transduction, and the internalization of connexin 43 from plasma membrane to cytoplasm.

  18. Tunnel Junctions between Metals and Magnetic Perovskites and their use in Spin Polarized Spectroscopy

    Science.gov (United States)

    Mieville, Laurent; Worledge, Daniel; Geballe, Theodore H.; Char, Kookrin

    1998-03-01

    The recently reported "colossal" magnetoresistance (CMR) effect in (La_1-xA_x)MnO3 (where A stands for alkaline earth element) has shed new light on the magnetic properties exhibited by some members of the perovskite family with the generic formula ABO_3. We have studied the interface resistance between metals (Al, Nb and Pd) and magnetic perovskites ((La_0.66Sr_0.34)MnO_3, SrRuO3 and (La_0.5Sr_0.5)CoO_3) thin films grown by pulsed laser deposition. Low temperature measurements of tunnel junctions which aim to measure directly the amount of spin polarized carriers present in these perovskites will be also reviewed.

  19. Influence of the interplay between helicoidal magnetic ordering and superconductivity on the differential conductance in HoNi2B2C/Ag junctions

    Indian Academy of Sciences (India)

    I N Askerzade

    2003-06-01

    The point contact spectra of magnetic superconductor HoNi2B2C/Ag-based junctions is analysed in the framework of Blonder–Tinkham–Klapwijk (BTK) theory. The anomalous behavior in the d/d curves above the Neel temperature (N∼ 5~{\\rm K}) is attempted to be explained by the partial suppression of superconducting gap parameter of the prevailing helical incommensurate structure.

  20. Tunneling conductance through normal metal - superconductor junctions: effects of Rashba spin orbit coupling and magnetic field

    Science.gov (United States)

    Kapri, Priyadarshini; Ganguly, Sudin; Basu, Saurabh

    2016-10-01

    In a system consisting of a metal-(s-wave) superconductor junction, we study the conductance characteristics in presence of Rashba spin orbit coupling (RSOC) and an external magnetic field applied along the plane of the sample. With a selective inclusion of the Rashba coupling either in the metallic or in both we note that there is a distinct effect with regard to the magnitude of the Andreev peak that occurs at a biasing voltage lower than the superconducting gap energy. The height of the peak is sensitive to the RSOC (increases with increase in RSOC) for RSOC to be present only in the metallic region, (same is true when RSOC is present throughout the junction), while the peak height is fairly independent when RSOC is solely present in the superconducting region. The in-plane magnetic field has very interesting effects which show up in the form of having a conductance peak at zero bias, thereby making it possible to realize a Majorana bound state.

  1. Enhancement of electric-field-induced change of magnetic anisotropy by interface engineering of MgO magnetic tunnel junctions

    Science.gov (United States)

    Bonaedy, Taufik; Choi, Jun Woo; Jang, Chaun; Min, Byoung-Chul; Chang, Joonyeon

    2015-06-01

    Electric-field-induced modification of magnetic anisotropy is studied using tunnel magnetoresistance of the Co40Fe40B20/ MgO/ Co40Fe40B20 and Co40Fe40B20/ Hf (0.08 nm)/ MgO/ Co40Fe40B20 magnetic tunnel junctions. In both systems, the interfacial perpendicular magnetic anisotropy is increased with increasing electron density at the MgO interface. A quantitative comparison between the two systems reveals that the change of magnetic anisotropy energy with electric field is significantly enhanced in Co40Fe40B20/ Hf/ MgO/ Co40Fe40B20 compared to Co40Fe40B20/ MgO/ Co40Fe40B20. The sub-monolayer Hf insertion at the Co40Fe40B20/MgO interface turns out to be critical to the enhanced electric field control of the magnetic anisotropy, indicating the interface sensitive nature of the effect.

  2. Asymmetric angular dependence of spin-transfer torques in CoFe/Mg-B-O/CoFe magnetic tunnel junctions

    Energy Technology Data Exchange (ETDEWEB)

    Tang, Ling, E-mail: lingtang@zjut.edu.cn; Xu, Zhi-Jun, E-mail: xzj@zjut.edu.cn; Zuo, Xian-Jun; Yang, Ze-Jin, E-mail: zejinyang@zjut.edu.cn [Department of Applied Physics, College of Science, Zhejiang University of Technology, Hangzhou 310023 (China); Gao, Qing-He [College of Science, Northeastern University, Shenyang 110004, China, Information Engineering College, Liaoning University of Traditional Chinese Medicine, Shenyang 110847 (China); Linghu, Rong-Feng, E-mail: linghu@gznu.edu.cn [School of Physics and Electronics Sciences, Guizhou Education University, Guiyang 550018 (China); Guo, Yun-Dong, E-mail: g308yd@126.com [College of Engineering and Technology, Neijiang Normal University, Neijiang 641112 (China)

    2016-04-28

    Using a first-principles noncollinear wave-function-matching method, we studied the spin-transfer torques (STTs) in CoFe/Mg-B-O/CoFe(001) magnetic tunnel junctions (MTJs), where three different types of B-doped MgO in the spacer are considered, including B atoms replacing Mg atoms (Mg{sub 3}BO{sub 4}), B atoms replacing O atoms (Mg{sub 4}BO{sub 3}), and B atoms occupying interstitial positions (Mg{sub 4}BO{sub 4}) in MgO. A strong asymmetric angular dependence of STT can be obtained both in ballistic CoFe/Mg{sub 3}BO{sub 4} and CoFe/Mg{sub 4}BO{sub 4} based MTJs, whereas a nearly symmetric STT curve is observed in the junctions based on CoFe/Mg{sub 4}BO{sub 3}. Furthermore, the asymmetry of the angular dependence of STT can be suppressed significantly by the disorder of B distribution. Such skewness of STTs in the CoFe/Mg-B-O/CoFe MTJs could be attributed to the interfacial resonance states induced by the B diffusion into MgO spacer.

  3. Nonlinear damping effects in spin torque dynamics of magnetic tunnel junctions

    Science.gov (United States)

    Barsukov, Igor; Chen, Yu-Jin; Lee, Han Kyu; Goncalves, Alexandre; Katine, Jordan; Arias, Rodrigo; Ivanov, Boris; Krivorotov, Ilya

    2015-03-01

    Performance of nanoscale spin torque devices such as memory (STT-MRAM) and auto-oscillators critically depends on magnetic relaxation. It is commonly assumed that magnetization dynamics in the presence of spin torque can be understood as simple competition between antidamping arising from spin torque and Gilbert damping of the free layer. However our experiments reveal that the situation is more complex and that nonlinear damping processes in the free layer of magnetic tunnel junction (MTJ) nanopillars can strongly alter spin torque driven dynamics. We study elliptical MTJ nanopillars with in-plane magnetizations of the free layer and SAF layers by spin torque ferromagnetic resonance. We find an excitation spectrum associated with standing spin waves of the free layer. By varying the external field, the energy of a higher-order spin wave mode becomes twice the energy of the main mode. This opens up a nonlinear, resonant relaxation channel, giving rise to a damping increase of approximately 20 percent. With increasing spin torque provided by a DC bias current, we find that this relaxation channel competes with antidamping in a nonlinear manner, increasingly contributing to and even dominating the relaxation at subcritical currents.

  4. Investigation of the Mn{sub 3−δ}Ga/MgO interface for magnetic tunneling junctions

    Energy Technology Data Exchange (ETDEWEB)

    ViolBarbosa, C. E., E-mail: carlos.barbosa@cpfs.mpg.de; Ouardi, S.; Fecher, G. H.; Felser, C. [Max-Planck-Institut für Chemische Physik fester Stoffe, Nöthnitzer Strasse 40, 01187 Dresden (Germany); Kubota, T.; Mizukami, S.; Miyazaki, T. [WPI Advanced Institute for Materials Research, Tohoku University, 980-8577 Sendai (Japan); Kozina, X.; Ikenaga, E. [JASRI, SPring-8, Sayo-cho, Hyogo 679-5198 (Japan)

    2014-07-21

    The Mn{sub 3}Ga Heusler compound and related alloys are the most promising materials for the realization of spin-transfer-torque magnetoresistive memories. Mn–Ga films exhibits perpendicular magnetic anisotropy and high spin polarization and can be used to improve the performance of MgO-based magneto tunneling junctions. The interface between Mn–Ga and MgO films were chemically characterized by hard x-ray photoelectron spectroscopy. The experiment indicated the formation of Ga-O bonds at the interface and evidenced changes in the local environment of Mn atoms in the proximity of the MgO film. We show that the deposition of few monoatomic layers of Mg on top of Mn–Ga film, before the MgO deposition, strongly suppresses the oxidation of gallium.

  5. MgGa2O4 spinel barrier for magnetic tunnel junctions: Coherent tunneling and low barrier height

    Science.gov (United States)

    Sukegawa, Hiroaki; Kato, Yushi; Belmoubarik, Mohamed; Cheng, P.-H.; Daibou, Tadaomi; Shimomura, Naoharu; Kamiguchi, Yuuzo; Ito, Junichi; Yoda, Hiroaki; Ohkubo, Tadakatsu; Mitani, Seiji; Hono, Kazuhiro

    2017-03-01

    Epitaxial Fe/magnesium gallium spinel oxide (MgGa2O4)/Fe(001) magnetic tunnel junctions (MTJs) were fabricated by magnetron sputtering. A tunnel magnetoresistance (TMR) ratio up to 121% at room temperature (196% at 4 K) was observed, suggesting a TMR enhancement by the coherent tunneling effect in the MgGa2O4 barrier. The MgGa2O4 layer had a spinel structure and it showed good lattice matching with the Fe layers owing to slight tetragonal lattice distortion of MgGa2O4. Barrier thickness dependence of the tunneling resistance and current-voltage characteristics revealed that the height of the MgGa2O4 barrier is much lower than that of an MgAl2O4 barrier. This study demonstrates the potential of Ga-based spinel oxides for MTJ barriers having a large TMR ratio at a low resistance area product.

  6. Soft errors in 10-nm-scale magnetic tunnel junctions exposed to high-energy heavy-ion radiation

    Science.gov (United States)

    Kobayashi, Daisuke; Hirose, Kazuyuki; Makino, Takahiro; Onoda, Shinobu; Ohshima, Takeshi; Ikeda, Shoji; Sato, Hideo; Inocencio Enobio, Eli Christopher; Endoh, Tetsuo; Ohno, Hideo

    2017-08-01

    The influences of various types of high-energy heavy-ion radiation on 10-nm-scale CoFeB-MgO magnetic tunnel junctions with a perpendicular easy axis have been investigated. In addition to possible latent damage, which has already been pointed out in previous studies, high-energy heavy-ion bombardments demonstrated that the magnetic tunnel junctions may exhibit clear flips between their high- and low-resistance states designed for a digital bit 1 or 0. It was also demonstrated that flipped magnetic tunnel junctions still may provide proper memory functions such as read, write, and hold capabilities. These two findings proved that high-energy heavy ions can produce recoverable bit flips in magnetic tunnel junctions, i.e., soft errors. Data analyses suggested that the resistance flips stem from magnetization reversals of the ferromagnetic layers and that each of them is caused by a single strike of heavy ions. It was concurrently found that an ion strike does not always result in a flip, suggesting a stochastic process behind the flip. Experimental data also showed that the flip phenomenon is dependent on the device and heavy-ion characteristics. Among them, the diameter of the device and the linear energy transfer of the heavy ions were revealed as the key parameters. From their dependences, the physical mechanism behind the flip was discussed. It is likely that a 10-nm-scale ferromagnetic disk loses its magnetization due to a local temperature increase induced by a single strike of heavy ions; this demagnetization is followed by a cooling period associated with a possible stochastic recovery process. On the basis of this hypothesis, a simple analytical model was developed, and it was found that the model accounts for the results reasonably well. This model also predicted that magnetic tunnel junctions provide sufficiently high soft-error reliability for use in space, highlighting their advantage over their counterpart conventional semiconductor memories.

  7. Design of high-throughput and low-power true random number generator utilizing perpendicularly magnetized voltage-controlled magnetic tunnel junction

    Directory of Open Access Journals (Sweden)

    Hochul Lee

    2017-05-01

    Full Text Available A true random number generator based on perpendicularly magnetized voltage-controlled magnetic tunnel junction devices (MRNG is presented. Unlike MTJs used in memory applications where a stable bit is needed to store information, in this work, the MTJ is intentionally designed with small perpendicular magnetic anisotropy (PMA. This allows one to take advantage of the thermally activated fluctuations of its free layer as a stochastic noise source. Furthermore, we take advantage of the voltage dependence of anisotropy to temporarily change the MTJ state into an unstable state when a voltage is applied. Since the MTJ has two energetically stable states, the final state is randomly chosen by thermal fluctuation. The voltage controlled magnetic anisotropy (VCMA effect is used to generate the metastable state of the MTJ by lowering its energy barrier. The proposed MRNG achieves a high throughput (32 Gbps by implementing a 64×64 MTJ array into CMOS circuits and executing operations in a parallel manner. Furthermore, the circuit consumes very low energy to generate a random bit (31.5 fJ/bit due to the high energy efficiency of the voltage-controlled MTJ switching.

  8. Design of high-throughput and low-power true random number generator utilizing perpendicularly magnetized voltage-controlled magnetic tunnel junction

    Science.gov (United States)

    Lee, Hochul; Ebrahimi, Farbod; Amiri, Pedram Khalili; Wang, Kang L.

    2017-05-01

    A true random number generator based on perpendicularly magnetized voltage-controlled magnetic tunnel junction devices (MRNG) is presented. Unlike MTJs used in memory applications where a stable bit is needed to store information, in this work, the MTJ is intentionally designed with small perpendicular magnetic anisotropy (PMA). This allows one to take advantage of the thermally activated fluctuations of its free layer as a stochastic noise source. Furthermore, we take advantage of the voltage dependence of anisotropy to temporarily change the MTJ state into an unstable state when a voltage is applied. Since the MTJ has two energetically stable states, the final state is randomly chosen by thermal fluctuation. The voltage controlled magnetic anisotropy (VCMA) effect is used to generate the metastable state of the MTJ by lowering its energy barrier. The proposed MRNG achieves a high throughput (32 Gbps) by implementing a 64 ×64 MTJ array into CMOS circuits and executing operations in a parallel manner. Furthermore, the circuit consumes very low energy to generate a random bit (31.5 fJ/bit) due to the high energy efficiency of the voltage-controlled MTJ switching.

  9. Time-resolved measurement of the tunnel magneto-Seebeck effect in a single magnetic tunnel junction.

    Science.gov (United States)

    Boehnke, Alexander; Walter, Marvin; Roschewsky, Niklas; Eggebrecht, Tim; Drewello, Volker; Rott, Karsten; Münzenberg, Markus; Thomas, Andy; Reiss, Günter

    2013-06-01

    Recently, several groups have reported spin-dependent thermoelectric effects in magnetic tunnel junctions. In this paper, we present a setup for time-resolved measurements of thermovoltages and thermocurrents of a single micro- to nanometer-scaled tunnel junction. An electrically modulated diode laser is used to create a temperature gradient across the tunnel junction layer stack. This laser modulation technique enables the recording of time-dependent thermovoltage signals with a temporal resolution only limited by the preamplifier for the thermovoltage. So far, time-dependent thermovoltage could not be interpreted. Now, with the setup presented in this paper, it is possible to distinguish different Seebeck voltage contributions to the overall measured voltage signal in the μs time regime. A model circuit is developed that explains those voltage contributions on different sample types. Further, it will be shown that a voltage signal arising from the magnetic tunnel junction can only be observed when the laser spot is directly centered on top of the magnetic tunnel junction, which allows a lateral separation of the effects.

  10. Dependency of anti-ferro-magnetic coupling strength on Ru spacer thickness of [Co/Pd]{sub n}-synthetic-anti-ferro-magnetic layer in perpendicular magnetic-tunnel-junctions fabricated on 12-inch TiN electrode wafer

    Energy Technology Data Exchange (ETDEWEB)

    Chae, Kyo-Suk [MRAM Center, Department of Electronics, Hanyang University, Seoul 133-791 (Korea, Republic of); Samsung Electronics Co., Ltd., San #16 Banwol-dong, Hwasung-City, Gyeonggi-Do 445-701 (Korea, Republic of); Shim, Tae-Hun; Park, Jea-Gun, E-mail: parkjgL@hanyang.ac.kr [MRAM Center, Department of Electronics, Hanyang University, Seoul 133-791 (Korea, Republic of)

    2014-07-21

    We investigated the Ru spacer-thickness effect on the anti-ferro-magnetic coupling strength (J{sub ex}) of a [Co/Pd]{sub n}-synthetic-anti-ferro-magnetic layer fabricated with Co{sub 2}Fe{sub 6}B{sub 2}/MgO based perpendicular-magnetic-tunneling-junction spin-valves on 12-in. TiN electrode wafers. J{sub ex} peaked at a certain Ru spacer-thickness: specifically, a J{sub ex} of 0.78 erg/cm{sup 2} at 0.6 nm, satisfying the J{sub ex} criteria for realizing the mass production of terra-bit-level perpendicular-spin-transfer-torque magnetic-random-access-memory. Otherwise, J{sub ex} rapidly degraded when the Ru spacer-thickness was less than or higher than 0.6 nm. As a result, the allowable Ru thickness variation should be controlled less than 0.12 nm to satisfy the J{sub ex} criteria. However, the Ru spacer-thickness did not influence the tunneling-magneto-resistance (TMR) and resistance-area (RA) of the perpendicular-magnetic-tunneling-junction (p-MTJ) spin-valves since the Ru spacer in the synthetic-anti-ferro-magnetic layer mainly affects the anti-ferro-magnetic coupling efficiency rather than the crystalline linearity of the Co{sub 2}Fe{sub 6}B{sub 2} free layer/MgO tunneling barrier/Co{sub 2}Fe{sub 6}B{sub 2} pinned layer, although Co{sub 2}Fe{sub 6}B{sub 2}/MgO based p-MTJ spin-valves ex-situ annealed at 275 °C achieved a TMR of ∼70% at a RA of ∼20 Ω μm{sup 2}.

  11. Analysis of gap junctional intercellular communications using a dielectrophoresis-based microchip

    OpenAIRE

    Tellez-Gabriel, M.; Charrier, C.; Brounais-Le Royer, B; Mullard, M.; Brown, H K; F. Verrecchia(-ASI ASDC;); Heymann, D

    2017-01-01

    International audience; Please cite this article in press as: Tellez-Gabriel, M., et al., Analysis of gap junctional intercellular communications using a dielectrophoresis-based microchip. Gap junctions are transmembrane structures that directly connect the cytoplasm of adjacent cells, making intercellular communications possible. It has been shown that the behaviour of several tumours – such as bone tumours – is related to gap junction intercellular communications (GJIC). Several methodologi...

  12. Experimental realization of single electron tunneling diode based on vertical graphene two-barrier junction

    OpenAIRE

    Xu, Rui; Bai, Ke-Ke; Nie, Jia-Cai; He, Lin

    2012-01-01

    Usually, graphene is used in its horizontal directions to design novel concept devices. Here, we report a single electron tunneling diode based on quantum tunneling through a vertical graphene two-barrier junction. The junction is formed by positioning a scanning tunnelling microscopy (STM) tip above a graphene nanoribbon that was deposited on a graphite surface. Because of the asymmetry of the two-barrier junction, the electrons can unidirectional transfer from the tip to the graphene nanori...

  13. Steady State and Dynamics of Joule Heating in Magnetic Tunnel Junctions Observed via the Temperature Dependence of RKKY Coupling

    Science.gov (United States)

    Chavent, A.; Ducruet, C.; Portemont, C.; Vila, L.; Alvarez-Hérault, J.; Sousa, R.; Prejbeanu, I. L.; Dieny, B.

    2016-09-01

    Understanding quantitatively the heating dynamics in magnetic tunnel junctions submitted to current pulses is very important in the context of spin-transfer-torque magnetic random-access memory development. Here we provide a method to probe the heating of magnetic tunnel junctions using the Ruderman-Kittel-Kasuya-Yoshida coupling of a synthetic ferrimagnetic storage layer as a thermal sensor. The temperature increase versus applied bias voltage is measured thanks to the decrease of the spin-flop field with temperature. This method allows distinguishing spin-transfer torque effects from the influence of temperature on the switching field. The heating dynamics is then studied in real time by probing the conductance variation due to spin-flop rotation during heating. This approach provides a method for measuring fast heating in spintronic devices, particularly magnetic random-access memory using thermally assisted or spin-transfer torque writing.

  14. Magneto-Seebeck effect in magnetic tunnel junctions with perpendicular anisotropy

    Science.gov (United States)

    Ning, Keyu; Liu, Houfang; Ju, Zhenyi; Fang, Chi; Wan, Caihua; Cheng, Jinglei; Liu, Xiao; Li, Linsen; Feng, Jiafeng; Wei, Hongxiang; Han, Xiufeng; Yang, Yi; Ren, Tian-Ling

    2017-01-01

    As one invigorated filed of spin caloritronics combining with spin, charge and heat current, the magneto-Seebeck effect has been experimentally and theoretically studied in spin tunneling thin films and nanostructures. Here we analyze the tunnel magneto-Seebeck effect in magnetic tunnel junctions with perpendicular anisotropy (p-MTJs) under various measurement temperatures. The large tunnel magneto-Seebeck (TMS) ratio up to -838.8% for p-MTJs at 200 K is achieved, with Seebeck coefficient S in parallel and antiparallel states of 6.7 mV/K and 62.9 mV/K, respectively. The temperature dependence of the tunnel magneto-Seebeck can be attributed to the contributing transmission function and electron states at the interface between CoFeB electrode and MgO barrier.

  15. Magneto-Seebeck effect in magnetic tunnel junctions with perpendicular anisotropy

    Directory of Open Access Journals (Sweden)

    Keyu Ning

    2017-01-01

    Full Text Available As one invigorated filed of spin caloritronics combining with spin, charge and heat current, the magneto-Seebeck effect has been experimentally and theoretically studied in spin tunneling thin films and nanostructures. Here we analyze the tunnel magneto-Seebeck effect in magnetic tunnel junctions with perpendicular anisotropy (p-MTJs under various measurement temperatures. The large tunnel magneto-Seebeck (TMS ratio up to −838.8% for p-MTJs at 200 K is achieved, with Seebeck coefficient S in parallel and antiparallel states of 6.7 mV/K and 62.9 mV/K, respectively. The temperature dependence of the tunnel magneto-Seebeck can be attributed to the contributing transmission function and electron states at the interface between CoFeB electrode and MgO barrier.

  16. Frequency driven inversion of tunnel magnetoimpedance and observation of positive tunnel magnetocapacitance in magnetic tunnel junctions

    Science.gov (United States)

    Parui, Subir; Ribeiro, Mário; Atxabal, Ainhoa; Bedoya-Pinto, Amilcar; Sun, Xiangnan; Llopis, Roger; Casanova, Fèlix; Hueso, Luis E.

    2016-08-01

    The relevance for modern computation of non-volatile high-frequency memories makes ac-transport measurements of magnetic tunnel junctions (MTJs) crucial for exploring this regime. Here, we demonstrate a frequency-mediated effect in which the tunnel magnetoimpedance reverses its sign in a classical Co/Al2O3/NiFe MTJ, whereas we only observe a gradual decrease in the tunnel magnetophase. Such effects are explained by the capacitive coupling of a parallel resistor and capacitor in the equivalent circuit model of the MTJ. Furthermore, we report a positive tunnel magnetocapacitance effect, suggesting the presence of a spin-capacitance at the two ferromagnet/tunnel-barrier interfaces. Our results are important for understanding spin transport phenomena at the high frequency regime in which the spin-polarized charge accumulation due to spin-dependent penetration depth at the two interfaces plays a crucial role.

  17. Degradation of magnetic tunnel junctions with thin AlOx barrier

    Directory of Open Access Journals (Sweden)

    Tadashi Mihara, Yoshinari Kamakura, Masato Morifuji and Kenji Taniguchi

    2007-01-01

    Full Text Available The degradation of magnetic tunnel junctions (MTJs with AlOx barrier was experimentally investigated. Constant voltage stress (CVS measurement was carried out to monitor the time evolution of the conductance and tunneling magnetoresistance (TMR of MTJs. The gradual increase of the stress-induced leakage current (SILC was observed prior to the breakdown, following a power law function of stress time with an exponent of about 0.2–0.4, which is similar to the case of the ultrathin gate oxide films in MOSFETs. The measured TMR for SILC suggests that the spin-dependent current component would be involved in the early stage of degradation, while spin-independent conduction becomes dominant before the breakdown resulting in a decrease of TMR.

  18. Magnetic tunnel junction design margin exploration for self-reference sensing scheme.

    Science.gov (United States)

    Sun, Z; Li, H; Wang, X

    2012-04-01

    This work investigates the magnetic tunnel junction (MTJ) design requirements for the application of nondestructive self-reference sensing scheme, a novel sensing scheme featuring high tolerance of process variations, fast sensing speed, and no impact on device reliability. Unlike the conventional sensing scheme that requires a large TMR ratio and the uniform antiparallel and parallel resistances for MTJs, the nondestructive self-reference sensing scheme is more sensitive to the roll-off slope of MTJ's R-I or R-V curve. Our purpose is to provide a guidance to facilitate MTJ design used in the nondestructive self-reference scheme. In this work, we comprehensively investigate and analyze the design matrix by considering MTJ device physical properties, such as bias voltage dependent conductance, spin torque, etc. The manuscript suggests the approaches to optimize MTJ design for better trade-off between device properties and circuit design.

  19. Frequency driven inversion of tunnel magnetoimpedance and observation of positive tunnel magnetocapacitance in magnetic tunnel junctions

    Energy Technology Data Exchange (ETDEWEB)

    Parui, Subir, E-mail: s.parui@nanogune.eu, E-mail: l.hueso@nanogune.eu; Ribeiro, Mário; Atxabal, Ainhoa; Llopis, Roger [CIC nanoGUNE, 20018 Donostia-San Sebastian (Spain); Bedoya-Pinto, Amilcar [CIC nanoGUNE, 20018 Donostia-San Sebastian (Spain); Max Planck Institute of Microstructure Physics, D-06120 Halle (Germany); Sun, Xiangnan [CIC nanoGUNE, 20018 Donostia-San Sebastian (Spain); National Center for Nanoscience and Technology, 100190 Beijing (China); Casanova, Fèlix; Hueso, Luis E., E-mail: s.parui@nanogune.eu, E-mail: l.hueso@nanogune.eu [CIC nanoGUNE, 20018 Donostia-San Sebastian (Spain); IKERBASQUE, Basque Foundation for Science, 48011 Bilbao (Spain)

    2016-08-01

    The relevance for modern computation of non-volatile high-frequency memories makes ac-transport measurements of magnetic tunnel junctions (MTJs) crucial for exploring this regime. Here, we demonstrate a frequency-mediated effect in which the tunnel magnetoimpedance reverses its sign in a classical Co/Al{sub 2}O{sub 3}/NiFe MTJ, whereas we only observe a gradual decrease in the tunnel magnetophase. Such effects are explained by the capacitive coupling of a parallel resistor and capacitor in the equivalent circuit model of the MTJ. Furthermore, we report a positive tunnel magnetocapacitance effect, suggesting the presence of a spin-capacitance at the two ferromagnet/tunnel-barrier interfaces. Our results are important for understanding spin transport phenomena at the high frequency regime in which the spin-polarized charge accumulation due to spin-dependent penetration depth at the two interfaces plays a crucial role.

  20. Very strong antiferromagnetic interlayer exchange coupling with iridium spacer layer for perpendicular magnetic tunnel junctions

    Science.gov (United States)

    Yakushiji, Kay; Sugihara, Atsushi; Fukushima, Akio; Kubota, Hitoshi; Yuasa, Shinji

    2017-02-01

    We systematically studied the interlayer exchange coupling (IEC) in a perpendicular synthetic antiferromagnetically coupled structure having an Ir spacer layer for perpendicular magnetic tunnel junctions (p-MTJs). We found a broader peak in IEC energy density (Jex) versus spacer thickness (tIr) compared with the case of using a Ru spacer. The highest IEC energy density was 2.6 erg/cm2 at a tIr of about 5 nm. The p-MTJ nanopillars had a high magnetoresistance ratio (131%) as well as a high spin-transfer torque (STT) switching efficiency (about 2). An Ir spacer can be used to make a stable reference layer for STT magnetoresistive random access memory.

  1. Time-dependent dielectric breakdown of MgO magnetic tunnel junctions and novel test method

    Science.gov (United States)

    Kim, Kyungjun; Choi, Chulmin; Oh, Youngtaek; Sukegawa, Hiroaki; Mitani, Seiji; Song, Yunheub

    2017-04-01

    Time-dependent dielectric breakdown (TDDB), which is used to measure reliability, depends on both the thickness of the tunnel barrier and bias voltage. In addition, the heat generated by self-heating in a magnetic tunneling junction (MTJ) affects TDDB. Therefore, we investigated TDDB with the self-heating effect for a MgO tunnel barrier with thicknesses of 1.1 and 1.2 nm by the constant voltage stress (CVS) method. Using the results of this experiment, we predicted a TDDB of 1.0 nm for the tunnel barrier. Also, we suggested the use of not only the CVS method, which is a common way of determining TDDB, but also the constant current stress (CCS) method, which compensates for the disadvantages of the CVS method.

  2. Double-pinned magnetic tunnel junction sensors with spin-valve-like sensing layers

    Energy Technology Data Exchange (ETDEWEB)

    Yuan, Z. H.; Huang, L.; Feng, J. F., E-mail: jiafengfeng@iphy.ac.cn; Wen, Z. C.; Li, D. L.; Han, X. F. [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, P. O. Box 603, Beijing 100190 (China); Nakano, Takafumi; Naganuma, Hiroshi, E-mail: naganuma@mlab.apph.tohoku.ac.jp [Department of Applied Physics, Tohoku University, Sendai, Miyagi 980-8579 (Japan); Yu, T. [Department of Applied Physics, Tohoku University, Sendai, Miyagi 980-8579 (Japan); College of Physical Science and Technology, Sichuan University, Chengdu 610064 (China)

    2015-08-07

    MgO magnetic tunnel junction (MTJ) sensors with spin-valve-like sensing layers of Ir{sub 22}Mn{sub 78} (6)/Ni{sub 80}Fe{sub 20} (t{sub NiFe} = 20–70)/Ru (0.9)/Co{sub 40}Fe{sub 40}B{sub 20} (3) (unit: nm) have been fabricated. A linear field dependence of magnetoresistance for these MTJ sensors was obtained by carrying out a two-step field annealing process. The sensitivity and linear field range can be tuned by varying the thickness of NiFe layer and annealing temperature, and a high sensitivity of 37%/mT has been achieved in the MTJ sensors with 70 nm NiFe at the optimum annealing temperature of 230 °C. Combining the spin-valve-like sensing structure and a soft magnetic NiFe layer, MTJ sensors with relatively wide field sensing range have been achieved and could be promising for showing high sensitivity magnetic field sensing applications.

  3. SPICE modelling of magnetic tunnel junctions written by spin-transfer torque

    Energy Technology Data Exchange (ETDEWEB)

    Guo, W; Prenat, G; De Mestier, N; Baraduc, C; Dieny, B [SPINTEC, UMR(8191), INAC, CEA/CNRS/UJF, 17 Av. des Martyrs, 38054 Grenoble Cedex 9 (France); Javerliac, V; El Baraji, M, E-mail: guillaume.prenat@cea.f [CROCUS Technology, 5 Place Robert Schuman, 38025 Grenoble (France)

    2010-06-02

    Spintronics aims at extending the possibility of conventional electronics by using not only the charge of the electron but also its spin. The resulting spintronic devices, combining the front-end complementary metal oxide semiconductor technology of electronics with a magnetic back-end technology, employ magnetic tunnel junctions (MTJs) as core elements. With the intent of simulating a circuit without fabricating it first, a reliable MTJ electrical model which is applicable to the standard SPICE (Simulation Program with Integrated Circuit Emphasis) simulator is required. Since such a model was lacking so far, we present a MTJ SPICE model whose magnetic state is written by using the spin-transfer torque effect. This model has been developed in the C language and validated on the Cadence Virtuoso Platform with a Spectre simulator. Its operation is similar to that of the standard BSIM (Berkeley Short-channel IGFET Model) SPICE model of the MOS transistor and fully compatible with the SPICE electrical simulator. The simulation results obtained using this model have been found in good accord with those theoretical macrospin calculations and results.

  4. Perpendicular magnetic tunnel junction with thin CoFeB/Ta/Co/Pd/Co reference layer

    Energy Technology Data Exchange (ETDEWEB)

    Gan, Huadong, E-mail: huadong@avalanche-technology.com; Malmhall, Roger; Wang, Zihui; Yen, Bing K; Zhang, Jing; Wang, Xiaobin; Zhou, Yuchen; Hao, Xiaojie; Jung, Dongha; Satoh, Kimihiro; Huai, Yiming [Avalanche Technology, 46600 Landing Parkway, Fremont, California 94538 (United States)

    2014-11-10

    Integration of high density spin transfer torque magnetoresistance random access memory requires a thin stack (less than 15 nm) of perpendicular magnetic tunnel junction (p-MTJ). We propose an innovative approach to solve this challenging problem by reducing the thickness and/or moment of the reference layer. A thin reference layer structure of CoFeB/Ta/Co/Pd/Co has 60% magnetic moment of the conventional thick structure including [Co/Pd] multilayers. We demonstrate that the perpendicular magnetization of the CoFeB/Ta/Co/Pd/Co structure can be realized by anti-ferromagnetically coupling to a pinned layer with strong perpendicular anisotropy via Ruderman-Kittel-Kasuya-Yosida exchange interaction. The pMTJ with thin CoFeB/Ta/Co/Pd/Co reference layer has a comparable TMR ratio (near 80%) as that with thick reference layer after annealing at 280 °C. The pMTJ with thin reference layer has a total thickness less than 15 nm, thereby significantly increasing the etching margin required for integration of high density pMTJ array on wafers with form factor of 300 mm and beyond.

  5. Circularly polarized light detector based on ferromagnet/semiconductor junctions

    CERN Document Server

    Ikeda, H; Nishibayashi, K; Munekata, H

    2014-01-01

    Helicity-dependent photocurrent delta-I has been detected successfully under experimental configuration that a circularly polarized light beam is impinged with a right angle on a cleaved sidewall of the Fe/x-AlOx/GaAs-based n-i-p double-heterostructure. The photocurrent delta-I has showed a well-defined hysteresis loop which resembles that of the magnetization of the in-plane magnetized Fe layer in the devices. The value of delta-I has been |delta-I|~0.2 nA at 5 K under the remnant magnetization state. Study on temperature dependence of the relative delta-I value at H = 0 has revealed that it is maximized at temperatures 125 - 150 K, and is still measurable at room temperature.

  6. Noise spectroscopy of CoFeB/MgO/CoFeB magnetic tunnel junctions in the presence of thermal gradients

    Energy Technology Data Exchange (ETDEWEB)

    Liebing, N. [Physikalisch-Technische Bundesanstalt, Bundesallee 100, d-38116 Braunschweig (Germany); Serrano-Guisan, S., E-mail: santiago.serrano-guisan@inl.int [International Iberian Nanotechnology Laboratory, Avenida Mestre Jose Veiga, 4715-330 Braga (Portugal); Rott, K.; Reiss, G. [University of Bielefeld, Department of Physics, Univesitätesstr. 25, d-33615 Bielefeld (Germany); Schumacher, H.W., E-mail: hans.w.schumacher@ptb.de [Physikalisch-Technische Bundesanstalt, Bundesallee 100, d-38116 Braunschweig (Germany)

    2016-02-15

    We present experimental data of the precessional dynamics of the free layer of CoFeB/MgO/CoFeB based magnetic tunnel junctions (MTJ) in the presence of thermal gradients across the MTJ. The free layer precession is investigated by noise spectroscopy. Thermal gradients of the order of tens of mK/nm across the MTJ are generated by electrical heating. Without applied thermal gradients we find spin transfer torque modified magnetization precession. With increasing thermal gradients we generally observe a decrease of the precession frequency which could be related to an increasing overall free layer temperature. However an asymmetry of the line width behavior for parallel and antiparallel orientation points towards additional effects beyond thermal activation. This could be a hint for the modification of the precessional dynamics in magnetic tunnel junctions by thermal spin torques. - Highlights: • Thermal gradients induced magnetization dynamics on MTJ structures are explored. • Magnetic noise spectroscopy is carried out to study the efficiency of such effects. • A decrease of resonance frequency is observed at both MTJ states for large ∇T. • An asymmetric linewidth behavior is observed for both MTJ states under ∇T. • Additional thermal effects beyond thermal activation must be considered.

  7. Electronic Transport in Molecular Junction Based on C20 Cages

    Institute of Scientific and Technical Information of China (English)

    OUYANG Fang-Ping; XU Hui

    2007-01-01

    Choosing closed-ended armchair(5,5)single-wall carbon nanotubes(CCNTs)as electrodes,we investigate the electron transport properties across an all-carbon molecular junction consisting of C20 molecules suspended between two semi-infinite carbon nanotubes.It is shown that the conductances are quite sensitive to the number of C20 molecules between electrodes for both configuration CFl and double-bonded models:the conductances of C20 dimers are markedly smaller than those of monomers.The physics is that incident electrons easily pass the C20 molecules and are predominantly scattered at the C20-C20 junctions.Moreover,we study the doping effect of such molecular junction by doping nitrogen atoms substitutionally.The bonding property of the molecular junction with configuration CFl has been analysed by calculating the Mulliken atomic charges.Our results have revealed that the C atoms in N-doped junctions are more ionic than those in pure-carbon ones,leading to the fact that N-doped junctions have relatively large conductance.

  8. Optimized electrode configuration for current-in-plane characterization of magnetic tunnel junction stacks

    Science.gov (United States)

    Cagliani, A.; Kjær, D.; Østerberg, F. W.; Hansen, O.; Nielsen, P. F.; Petersen, D. H.

    2017-02-01

    The current-in-plane tunneling technique (CIPT) has been a crucial tool in the development of magnetic tunnel junction stacks suitable for magnetic random access memories (MRAM) for more than a decade. The MRAM development has now reached the maturity to make the transition from the R&D phase to the pilot production phase. This will require an improvement in the repeatability of the CIPT metrology technique. Here, we present an analytical model that can be used to simulate numerically the repeatability of a CIPT measurement for an arbitrary MTJ stack prior to any CIPT measurement. The model describes mathematically the main sources of error arising when a micro multi-electrode probe is used to perform a CIPT measurement. The numerically simulated repeatability values obtained on four different MTJ stacks are verified by experimental data and the model is used to optimize the choice of electrodes on a multi-electrode probe to reach up to 36% improvement on the repeatability for the resistance area product and the tunneling magnetoresistance measurement, without any hardware modification.

  9. Vortex domain structures and dc current dependence of magneto-resistances in magnetic tunnel junctions

    Institute of Scientific and Technical Information of China (English)

    Wei Hong-Xiang; Lu Qing-Feng; Zhao Su-Fen; Zhang Xie-Qun; Feng Jia-Feng; Han Xiu-Feng

    2004-01-01

    Microfabrication and the magneto-transport characteristics of the magnetic tunnel junctions (MTJs) with a spin-valve-type structure of Ta (5nm)/Ni7gFe21 (25nm)/Ir22Mn78 (12nm)/Co75Fe25 (4nm)/Al(0.8nm) oxide/Co75Fe25(4nm)/Ni7gFe21 (20nm)/Ta(5nm) were investigated in this paper. A series of experimental data measured with a MTJ was used to verify a magnon-assisted tunnelling model and theory. Furthermore, a micromagnetics simulation shows that the butterfly-like vortex domain structures can be formed under a current-induced Oersted field, which decreases the net magnetization values of the ferromagnetic electrodes under a large dc current (i.e., in high voltage regimes). It is one of the main reasons for the tunnel magnetoresistance ratios to decrease significantly at high voltage biasing.

  10. Analytical description of ballistic spin currents and torques in magnetic tunnel junctions

    KAUST Repository

    Chshiev, M.

    2015-09-21

    In this work we demonstrate explicit analytical expressions for both charge and spin currents which constitute the 2×2 spinor in magnetic tunnel junctions with noncollinear magnetizations under applied voltage. The calculations have been performed within the free electron model in the framework of the Keldysh formalism and WKB approximation. We demonstrate that spin/charge currents and spin transfer torques are all explicitly expressed through only three irreducible quantities, without further approximations. The conditions and mechanisms of deviation from the conventional sine angular dependence of both spin currents and torques are shown and discussed. It is shown in the thick barrier approximation that all tunneling transport quantities can be expressed in an extremely simplified form via Slonczewski spin polarizations and our effective spin averaged interfacial transmission probabilities and effective out-of-plane polarizations at both interfaces. It is proven that the latter plays a key role in the emergence of perpendicular spin torque as well as in the angular dependence character of all spin and charge transport considered. It is demonstrated directly also that for any applied voltage, the parallel component of spin current at the FM/I interface is expressed via collinear longitudinal spin current components. Finally, spin transfer torque behavior is analyzed in a view of transverse characteristic length scales for spin transport.

  11. Large influence of capping layers on tunnel magnetoresistance in magnetic tunnel junctions

    Science.gov (United States)

    Zhou, Jiaqi; Zhao, Weisheng; Wang, Yin; Peng, Shouzhong; Qiao, Junfeng; Su, Li; Zeng, Lang; Lei, Na; Liu, Lei; Zhang, Youguang; Bournel, Arnaud

    2016-12-01

    It has been reported in experiments that capping layers, which enhance the perpendicular magnetic anisotropy (PMA) of magnetic tunnel junctions (MTJs), induce a great impact on the tunnel magnetoresistance (TMR). To explore the essential influence caused by the capping layers, we carry out ab initio calculations on TMR in the X(001)|CoFe(001)|MgO(001)|CoFe(001)|X(001) MTJ, where X represents the capping layer material, which can be tungsten, tantalum, or hafnium. We report TMR in different MTJs and demonstrate that tungsten is an ideal candidate for a giant TMR ratio. The transmission spectrum in Brillouin zone is presented. It can be seen that in the parallel condition of MTJ, sharp transmission peaks appear in the minority-spin channel. This phenomenon is attributed to the resonant tunnel transmission effect, and we explained it by the layer-resolved density of states. In order to explore transport properties in MTJs, the density of scattering states was studied from the point of band symmetry. It has been found that CoFe|tungsten interface blocks scattering states transmission in the anti-parallel condition. This work reports TMR and transport properties in MTJs with different capping layers and proves that tungsten is a proper capping layer material, which would benefit the design and optimization of MTJs.

  12. Influence of the thermal interface resistance on the thermovoltage of a magnetic tunnel junction

    Science.gov (United States)

    Böhnert, Tim; Dutra, Roberta; Sommer, Rubem L.; Paz, Elvira; Serrano-Guisan, Santiago; Ferreira, Ricardo; Freitas, Paulo P.

    2017-03-01

    In the field of spin caloritronics recent theoretical models suggested a significant influence of the interfaces of the magnetic tunnel junction (MTJ) on the thermal transport. In this work magnetothermopower measurements are carried out on CoFeB/MgO/CoFeB nanopillars and an unexpected increase of the thermovoltage with the diameter of the nanopillars is observed. To understand this behavior the thermal profiles are computed by finite element simulations. The observed behavior with the pillar diameter could only be reproduced in simulations by considering a far lower effective thermal conductivity of the MgO than the intrinsic thin-film value. In agreement with theoretical predictions, a finite thermal conductivity of the MgO/CoFeB interface can explain this observation. This is experimental evidence of the influence of the thermal resistance of the MgO/CoFeB interfaces on magnetothermovoltage measurements and is in agreement with recent theoretical predictions. The measured magnetothermovoltage is around 4.5 μV and the simulated temperature difference is about 2 K across the tunnel barrier, which resulted in a magnetic contribution of the thermopower of Δ SMTJ≈-2.25 μ V K-1 . This value was about 20 times smaller than the result obtained by the typically used thermal conductivity of MgO thin films.

  13. Thermal Transport and Nonequilibrium Temperature Drop Across a Magnetic Tunnel Junction

    Science.gov (United States)

    Zhang, Jia; Bachman, Michael; Czerner, Michael; Heiliger, Christian

    2015-07-01

    In the field of spin caloritronics, spin-dependent transport phenomena are observed in a number of current experiments where a temperature gradient across a nanostructured interface is applied. The interpretation of these experiments is not clear as both phonons and electrons may contribute to thermal transport. Therefore, it still remains an open question how the temperature drop across a magnetic nanostructured interface arises microscopically. We answer this question for the case of a magnetic tunnel junction (MTJ) where the tunneling magneto-Seebeck effect occurs. Our explanation may be extended to other types of nanostructured interfaces. We explicitly calculate phonon and electron thermal conductance across Fe /MgO /Fe MTJs in an ab initio approach using a Green function method. Furthermore, we are able to calculate the electron and phonon temperature profile across the Fe /MgO /Fe MTJ by estimating the electron-phonon interaction in the Fe leads. Our results show that there is an electron-phonon temperature imbalance at the Fe-MgO interfaces. As a consequence, a revision of the interpretation of current experimental measurements may be necessary.

  14. BEOL compatible high tunnel magneto resistance perpendicular magnetic tunnel junctions using a sacrificial Mg layer as CoFeB free layer cap

    Energy Technology Data Exchange (ETDEWEB)

    Swerts, J., E-mail: Johan.Swerts@imec.be; Mertens, S.; Lin, T.; Couet, S.; Tomczak, Y.; Sankaran, K.; Pourtois, G.; Kim, W.; Meersschaut, J.; Souriau, L.; Radisic, D.; Van Elshocht, S.; Kar, G.; Furnemont, A. [imec, Kapeldreef 75, Leuven 3001 (Belgium)

    2015-06-29

    Perpendicularly magnetized MgO-based tunnel junctions are envisaged for future generation spin-torque transfer magnetoresistive random access memory devices. Achieving a high tunnel magneto resistance and preserving it together with the perpendicular magnetic anisotropy during BEOL CMOS processing are key challenges to overcome. The industry standard technique to deposit the CoFeB/MgO/CoFeB tunnel junctions is physical vapor deposition. In this letter, we report on the use of an ultrathin Mg layer as free layer cap to protect the CoFeB free layer from sputtering induced damage during the Ta electrode deposition. When Ta is deposited directly on CoFeB, a fraction of the surface of the CoFeB is sputtered even when Ta is deposited with very low deposition rates. When depositing a thin Mg layer prior to Ta deposition, the sputtering of CoFeB is prevented. The ultra-thin Mg layer is sputtered completely after Ta deposition. Therefore, the Mg acts as a sacrificial layer that protects the CoFeB from sputter-induced damage during the Ta deposition. The Ta-capped CoFeB free layer using the sacrificial Mg interlayer has significantly better electrical and magnetic properties than the equivalent stack without protective layer. We demonstrate a tunnel magneto resistance increase up to 30% in bottom pinned magnetic tunnel junctions and tunnel magneto resistance values of 160% at resistance area product of 5 Ω.μm{sup 2}. Moreover, the free layer maintains perpendicular magnetic anisotropy after 400 °C annealing.

  15. BEOL compatible high tunnel magneto resistance perpendicular magnetic tunnel junctions using a sacrificial Mg layer as CoFeB free layer cap

    Science.gov (United States)

    Swerts, J.; Mertens, S.; Lin, T.; Couet, S.; Tomczak, Y.; Sankaran, K.; Pourtois, G.; Kim, W.; Meersschaut, J.; Souriau, L.; Radisic, D.; Van Elshocht, S.; Kar, G.; Furnemont, A.

    2015-06-01

    Perpendicularly magnetized MgO-based tunnel junctions are envisaged for future generation spin-torque transfer magnetoresistive random access memory devices. Achieving a high tunnel magneto resistance and preserving it together with the perpendicular magnetic anisotropy during BEOL CMOS processing are key challenges to overcome. The industry standard technique to deposit the CoFeB/MgO/CoFeB tunnel junctions is physical vapor deposition. In this letter, we report on the use of an ultrathin Mg layer as free layer cap to protect the CoFeB free layer from sputtering induced damage during the Ta electrode deposition. When Ta is deposited directly on CoFeB, a fraction of the surface of the CoFeB is sputtered even when Ta is deposited with very low deposition rates. When depositing a thin Mg layer prior to Ta deposition, the sputtering of CoFeB is prevented. The ultra-thin Mg layer is sputtered completely after Ta deposition. Therefore, the Mg acts as a sacrificial layer that protects the CoFeB from sputter-induced damage during the Ta deposition. The Ta-capped CoFeB free layer using the sacrificial Mg interlayer has significantly better electrical and magnetic properties than the equivalent stack without protective layer. We demonstrate a tunnel magneto resistance increase up to 30% in bottom pinned magnetic tunnel junctions and tunnel magneto resistance values of 160% at resistance area product of 5 Ω.μm2. Moreover, the free layer maintains perpendicular magnetic anisotropy after 400 °C annealing.

  16. Fast neutron tolerance of the perpendicular-anisotropy CoFeB-MgO magnetic tunnel junctions with junction diameters between 46 and 64 nm

    Science.gov (United States)

    Narita, Yuzuru; Takahashi, Yutaka; Harada, Masahide; Oikawa, Kenichi; Kobayashi, Daisuke; Hirose, Kazuyuki; Sato, Hideo; Ikeda, Shoji; Endoh, Tetsuo; Ohno, Hideo

    2017-08-01

    This work represents the first-ever investigation of the effects of fast neutron exposure on the perpendicular-anisotropy CoFeB-MgO magnetic tunnel junctions (p-MTJs) with practical junction diameters (D) between 46 and 64 nm. In this study, 461 p-MTJs, each with a tunnel magnetoresistance (TMR) ratio above 90%, were irradiated with fast neutrons at a total 1 MeV equivalent fluence of 3.79 × 1012 cm-2, corresponding to 1.90 × 1011 h irradiation with fast atmospheric neutrons (20 cm-2 h-1), without applying a bias voltage. Following irradiation, there were no changes in the properties of these devices, such as their resistance versus magnetic field curves, resistance values in the parallel and anti-parallel states, or TMR ratios, regardless of the neutron fluence. On the basis of these data, the nuclear reactions that occur under the specific experimental neutron irradiation conditions employed in this work are discussed.

  17. Tunneling electroresistance of MgZnO-based tunnel junctions

    Science.gov (United States)

    Belmoubarik, Mohamed; Al-Mahdawi, Muftah; Obata, Masao; Yoshikawa, Daiki; Sato, Hideyuki; Nozaki, Tomohiro; Oda, Tatsuki; Sahashi, Masashi

    2016-10-01

    We investigated the tunneling electroresistance (TER) in metal/wurtzite-MgZnO/metal junctions for applications in nonvolatile random-access memories. A resistive switching was detected utilizing an electric-field cooling at ±1 V and exhibited a TER ratio of 360%-490% at 2 K. The extracted change in the average barrier height between the two resistance states gave an estimation of the MgZnO electric polarization at 2.5 μC/cm2 for the low-temperature limit. In addition, the temperature-dependent TER ratio and the shift of the localized states energies at the barrier interface supported the ferroelectric behavior of the MgZnO tunnel-barrier. From the first-principles calculations, we found a similar effect of the barrier height change coming from the reversal of ZnO electric polarization. The possibility of using metal electrodes and lower growth temperatures, in addition to the ferroelectric property, make the ZnO-based memory devices suitable for CMOS integration.

  18. Magnetoresistance in antiferromagnet-based spin tunnel junctions

    Science.gov (United States)

    Jungwirth, Tomas

    2012-02-01

    To date spintronics research and applications of magnetically ordered systems have focused on ferromagnets (FMs). There are, however, fundamental physical limitations for FM materials which may make them impractical to realize the full potential of spintronics. Metal FMs offer high temperature operation but the large magnetic stray fields make them unfavorable for high-density integration and metals are unsuitable for transistor and information processing applications. FM semiconductors on the other hand do not allow for high-temperature operation. We present a concept in which these limitations are circumvented in spintronics based on antiferromagnets. The concept is based on relativistic magnetic and magneto-transport anisotropy effects in nanodevices whose common characteristics is that they are an even function of the microscopic magnetic moment vector, i.e., can be equally strong in AFMs as in FMs. As a demonstration we present our experimental observation of >100% tunneling anisotropic magnetoresistance in a device with an IrMn AFM tunnel electrode [1]. We will also discuss candidate materials for high-temperature AFM semiconductor spintronics [2].[4pt] [1] B. G. Park, J.Wunderlich, X.Marti, V.Holy, Y.Kurosaki, M.Yamada, H.Yamamoto, A.Nishide, J.Hayakawa, H.Takahashi, A.B.Shick, T.Jungwirth, Nature Mat. 10, 347 (2011). [0pt] [2] T.Jungwirth, V.Nov'ak, X.Marti, M.Cukr, F.M'aca, A.B. Shick, J.Masek, P.Horodysk'a, P.Nemec, V.Hol'y, et al., Phys. Rev. B 83, 035321 (2011).

  19. Dc SQUIDs with sub-micron-sized Nb/HfTi/Nb Josephson junctions for operation in high magnetic fields

    Energy Technology Data Exchange (ETDEWEB)

    Nagel, Joachim; Konovalenko, Konstantin; Kleiner, Reinhold; Koelle, Dieter [Physikalisches Institut - Experimentalphysik II, Center for Collective Quantum Phenomena and their Applications, Universitaet Tuebingen, Auf der Morgenstelle 14, D-72076 (Germany); Kieler, Oliver; Kohlmann, Johannes; Zorin, Alexander [Fachbereich 2.4 ' ' Quantenelektronik' ' , Physikalisch-Technische Bundesanstalt, 38116 Braunschweig (Germany)

    2010-07-01

    We investigate the suitability of dc superconducting quantum interference devices (SQUIDs) for operation in high magnetic fields (up to B{approx}100 mT) at temperature T=4.2 K. The micro SQUIDs with superconductor (S)-normal metal (N)-superconductor (S) sub-micrometer Josephson junctions were realized using Nb electrodes and HfTi for the normal interlayer. Our fabrication technology combines e-beam lithography and chemical-mechanical polishing which enables junction sizes down to 200 nm x 200 nm, integrated into small superconductor rings with inner dimensions down to 0.5 {mu} m x 0.5 {mu} m. The characteristic voltage of the SNS junctions is typically 30-40 {mu}V with a McCumber parameter {beta}{sub C}<0.1, and a screening parameter of the SQUIDs {beta}{sub L}{approx}0.2. The SQUIDs where characterized by measurements of electric transport and noise (using a Nb dc SQUID amplifier) in a magnetically shielded environment as well as in high magnetic fields. The SQUIDs show very low flux noise which is a major prerequisite for their application as detectors for magnetic properties of nanoparticles.

  20. Radio-frequency shot-noise measurement in a magnetic tunnel junction with a MgO barrier

    Energy Technology Data Exchange (ETDEWEB)

    Rehman, Mushtaq; Park, Junghwan; Song, Woon; Chong, Yonuk [Korea Research Institute of Standards and Science, Daejeon (Korea, Republic of); Lee, Yeonsub; Min, Byoungchul; Shin, Kyungho [Korea Institute of Science and Technology, Seoul (Korea, Republic of); Ryu, Sangwan [Chonnam National University, Gwangju (Korea, Republic of); Khim, Zheong [Seoul National University, Seoul (Korea, Republic of)

    2010-10-15

    We measured the noise power of a magnetic tunnel junction in the frequency range of 710 {approx} 1200 MHz. A low-noise cryogenic HEMT amplifier was used to measure the small noise signal at a high frequency with wide bandwidth. The MgO-barrier tunnel junction showed large tunnel magnetoresistance ratio of 215% at low temperature, which indicates electronic transport through the tunnel barrier without any significant spin-flip scattering. In the bias-dependent noise measurement, however, the zero-bias shot noise was enhanced compared to the value expected from a perfect tunnel barrier or the value observed from a good Al-AlO{sub x}-Al tunnel junction. We assume that this enhanced noise comes from inelastic tunneling processes through the barrier, which may be related to the observed zero-bias anomaly in the differential resistance of the tunnel junctions. We present a simple phenomenological model for how the inelastic scattering process can enhance the zero-bias noise in a tunnel junction.

  1. DNA gridiron nanostructures based on four-arm junctions.

    Science.gov (United States)

    Han, Dongran; Pal, Suchetan; Yang, Yang; Jiang, Shuoxing; Nangreave, Jeanette; Liu, Yan; Yan, Hao

    2013-03-22

    Engineering wireframe architectures and scaffolds of increasing complexity is one of the important challenges in nanotechnology. We present a design strategy to create gridiron-like DNA structures. A series of four-arm junctions are used as vertices within a network of double-helical DNA fragments. Deliberate distortion of the junctions from their most relaxed conformations ensures that a scaffold strand can traverse through individual vertices in multiple directions. DNA gridirons were assembled, ranging from two-dimensional arrays with reconfigurability to multilayer and three-dimensional structures and curved objects.

  2. Effect of Low-Frequency AC Magnetic Susceptibility and Magnetic Properties of CoFeB/MgO/CoFeB Magnetic Tunnel Junctions

    Directory of Open Access Journals (Sweden)

    Yuan-Tsung Chen

    2014-01-01

    Full Text Available In this investigation, the low-frequency alternate-current (AC magnetic susceptibility (χac and hysteresis loop of various MgO thickness in CoFeB/MgO/CoFeB magnetic tunneling junction (MTJ determined coercivity (Hc and magnetization (Ms and correlated that with χac maxima. The multilayer films were sputtered onto glass substrates and the thickness of intermediate barrier MgO layer was varied from 6 to 15 Å. An experiment was also performed to examine the variation of the highest χac and maximum phase angle (θmax at the optimal resonance frequency (fres, at which the spin sensitivity is maximal. The results reveal that χac falls as the frequency increases due to the relationship between magnetization and thickness of the barrier layer. The maximum χac is at 10 Hz that is related to the maximal spin sensitivity and that this corresponds to a MgO layer of 11 Å. This result also suggests that the spin sensitivity is related to both highest χac and maximum phase angle. The corresponding maximum of χac is related to high exchange coupling. High coercivity and saturation magnetization contribute to high exchange-coupling χac strength.

  3. Reducing spin-torque switching current by incorporating an ultra-thin Ta layer with CoFeB free layer in magnetic tunnel junctions

    Energy Technology Data Exchange (ETDEWEB)

    Liu, R. S., E-mail: liurs7204@yahoo.com; Meng, H.; Naik, V. B.; Sim, C. H.; Yap, S.; Luo, P. [Data Storage Institute, A*STAR (Agency for Science Technology and Research), DSI Building, 5 Engineering Drive 1, Singapore 117608 (Singapore)

    2014-12-15

    We studied the spin torque switching in dual MgO layer based magnetic tunnel junctions (MTJs) by incorporating an ultra-thin (0.5 nm) Ta layer at the CoFeB free layer/top MgO layer interface. The Ta incorporated MTJ showed a significant reduction (∼30%) in critical switching current density (J{sub C0} ) as compared to that of the control MTJ whilst maintaining the same tunneling magnetoresistance as well as thermal stability. The reduction of J{sub C0} can be attributed to the perpendicular magnetic anisotropy arising from the incorporation of an ultrathin Ta layer with the MgO|CoFeB structure. This scheme of reducing J{sub C0} without degrading other properties may contribute to the development of spin-transfer-torque magnetic random access memory for low power applications.

  4. Spin asymmetry calculations of the TMR-V curves in single and double-barrier magnetic tunnel junctions

    KAUST Repository

    Useinov, Arthur

    2011-10-01

    Spin-polarization asymmetry is the key parameter in asymmetric voltage behavior (AVB) of the tunnel magnetoresistance (TMR) in magnetic tunnel junctions. In this paper, we study the value of the TMR as a function of the applied voltage Va in the single as well as double barrier magnetic tunnel junctions (SMTJ & DMTJ, which are constructed from CoFeB/MgO interfaces) and numerically estimate the possible difference of the TMR-V a curves for negative and positive voltages in the homojunctions. As a result, we found that AVB may help to determine the exact values of Fermi wave vectors for minority and majority conducting spin sub-bands. Moreover, significant asymmetry of the experimental TMR-Va curves, which arises due to different annealing regimes, is explained by different heights of the tunnel barriers and values of the spin asymmetry. The numerical TMR-V a data are in good agreement with experimental ones. © 2011 IEEE.

  5. Supercurrent reversal in Josephson junctions based on bilayer graphene flakes

    Science.gov (United States)

    Rameshti, Babak Zare; Zareyan, Malek; Moghaddam, Ali G.

    2015-08-01

    We investigate the Josephson effect in a bilayer graphene flake contacted by two monolayer sheets deposited by superconducting electrodes. It is found that when the electrodes are attached to the different layers of the bilayer, the Josephson current is in a π state, if the bilayer region is undoped and there is no vertical bias. Applying doping or bias to the junction reveals π -0 transitions which can be controlled by varying the temperature and the junction length. The supercurrent reversal here is very different from the ferromagnetic Josephson junctions where the spin degree of freedom plays the key role. We argue that the scattering processes accompanied by layer and sublattice index change give rise to the scattering phases, the effect of which varies with doping and bias. Such scattering phases are responsible for the π -0 transitions. On the other hand, if both of the electrodes are coupled to the same layer of the flake or the flake has AA stacking instead of common AB, the junction will be always in 0 state since the layer or sublattice index is not changed.

  6. High Performance MgO-barrier Magnetic Tunnel Junctions for Flexible and Wearable Spintronic Applications.

    Science.gov (United States)

    Chen, Jun-Yang; Lau, Yong-Chang; Coey, J M D; Li, Mo; Wang, Jian-Ping

    2017-02-02

    The magnetic tunnel junction (MTJ) using MgO barrier is one of most important building blocks for spintronic devices and has been widely utilized as miniaturized magentic sensors. It could play an important role in wearable medical devices if they can be fabricated on flexible substrates. The required stringent fabrication processes to obtain high quality MgO-barrier MTJs, however, limit its integration with flexible electronics devices. In this work, we have developed a method to fabricate high-performance MgO-barrier MTJs directly onto ultrathin flexible silicon membrane with a thickness of 14 μm and then transfer-and-bond to plastic substrates. Remarkably, such flexible MTJs are fully functional, exhibiting a TMR ratio as high as 190% under bending radii as small as 5 mm. The devices' robustness is manifested by its retained excellent performance and unaltered TMR ratio after over 1000 bending cycles. The demonstrated flexible MgO-barrier MTJs opens the door to integrating high-performance spintronic devices in flexible and wearable electronics devices for a plethora of biomedical sensing applications.

  7. The right temporoparietal junction in attention and social interaction: A transcranial magnetic stimulation study.

    Science.gov (United States)

    Krall, Sarah C; Volz, Lukas J; Oberwelland, Eileen; Grefkes, Christian; Fink, Gereon R; Konrad, Kerstin

    2016-02-01

    The right temporoparietal junction (rTPJ) has been associated with the ability to reorient attention to unexpected stimuli and the capacity to understand others' mental states (theory of mind [ToM]/false belief). Using activation likelihood estimation meta-analysis we previously unraveled that the anterior rTPJ is involved in both, reorienting of attention and ToM, possibly indicating a more general role in attention shifting. Here, we used neuronavigated transcranial magnetic stimulation to directly probe the role of the rTPJ across attentional reorienting and false belief. Task performance in a visual cueing paradigm and false belief cartoon task was investigated after application of continuous theta burst stimulation (cTBS) over anterior rTPJ (versus vertex, for control). We found that attentional reorienting was significantly impaired after rTPJ cTBS compared with control. For the false belief task, error rates in trials demanding a shift in mental state significantly increased. Of note, a significant positive correlation indicated a close relation between the stimulation effect on attentional reorienting and false belief trials. Our findings extend previous neuroimaging evidence by indicating an essential overarching role of the anterior rTPJ for both cognitive functions, reorienting of attention and ToM. Hum Brain Mapp 37:796-807, 2016. © 2015 Wiley Periodicals, Inc.

  8. Coexistance of Giant Tunneling Electroresistance and Magnetoresistance in an All-Oxide Composite Magnetic Tunnel Junction

    KAUST Repository

    Caffrey, Nuala Mai

    2012-11-30

    We propose, by performing advanced abinitio electron transport calculations, an all-oxide composite magnetic tunnel junction, within which both large tunneling magnetoresistance (TMR) and tunneling electroresistance (TER) effects can coexist. The TMR originates from the symmetry-driven spin filtering provided by an insulating BaTiO3 barrier to the electrons injected from the SrRuO3 electrodes. Following recent theoretical suggestions, the TER effect is achieved by intercalating a thin insulating layer, here SrTiO3, at one of the SrRuO3/BaTiO3 interfaces. As the complex band structure of SrTiO3 has the same symmetry as that of BaTiO3, the inclusion of such an intercalated layer does not negatively alter the TMR and in fact increases it. Crucially, the magnitude of the TER also scales with the thickness of the SrTiO3 layer. The SrTiO3 thickness becomes then a single control parameter for both the TMR and the TER effect. This protocol offers a practical way to the fabrication of four-state memory cells. © 2012 American Physical Society.

  9. Strength of the symmetry spin-filtering effect in magnetic tunnel junctions

    Science.gov (United States)

    Faleev, Sergey V.; Mryasov, Oleg N.; Parkin, Stuart S. P.

    2016-11-01

    We developed a general theory that allows us to predict the power factor n in the asymptotics of the tunneling magnetoresistance (TMR), TMR∝Nn , in the limit of large number of the tunnel barrier layers, N , for a magnetic tunnel junction (MTJ) system that has the so-called symmetry spin-filtering properties. Within this theory the only information required to determine n is the knowledge of the symmetries of the wave functions of the bulk electrode and barrier materials at the Γ point in the in-plane surface Brillouin zone. In particular, we show that for a MTJ that has the in-plane square symmetry only three values for the power factor are allowed: n =0 ,1 , and 2 for the asymptotics of the TMR enhanced due to the symmetry spin-filtering mechanism. To verify our theory we performed the density functional theory calculations of transmission functions and TMR for a Fe/MgO/Fe MTJ which confirm predicted values of the power factor n =0 ,1 , or 2 in specific ranges of energies (in particular, n =1 at the Fermi energy).

  10. High Performance MgO-barrier Magnetic Tunnel Junctions for Flexible and Wearable Spintronic Applications

    Science.gov (United States)

    Chen, Jun-Yang; Lau, Yong-Chang; Coey, J. M. D.; Li, Mo; Wang, Jian-Ping

    2017-02-01

    The magnetic tunnel junction (MTJ) using MgO barrier is one of most important building blocks for spintronic devices and has been widely utilized as miniaturized magentic sensors. It could play an important role in wearable medical devices if they can be fabricated on flexible substrates. The required stringent fabrication processes to obtain high quality MgO-barrier MTJs, however, limit its integration with flexible electronics devices. In this work, we have developed a method to fabricate high-performance MgO-barrier MTJs directly onto ultrathin flexible silicon membrane with a thickness of 14 μm and then transfer-and-bond to plastic substrates. Remarkably, such flexible MTJs are fully functional, exhibiting a TMR ratio as high as 190% under bending radii as small as 5 mm. The devices‘ robustness is manifested by its retained excellent performance and unaltered TMR ratio after over 1000 bending cycles. The demonstrated flexible MgO-barrier MTJs opens the door to integrating high-performance spintronic devices in flexible and wearable electronics devices for a plethora of biomedical sensing applications.

  11. High Performance MgO-barrier Magnetic Tunnel Junctions for Flexible and Wearable Spintronic Applications

    Science.gov (United States)

    Chen, Jun-Yang; Lau, Yong-Chang; Coey, J. M. D.; Li, Mo; Wang, Jian-Ping

    2017-01-01

    The magnetic tunnel junction (MTJ) using MgO barrier is one of most important building blocks for spintronic devices and has been widely utilized as miniaturized magentic sensors. It could play an important role in wearable medical devices if they can be fabricated on flexible substrates. The required stringent fabrication processes to obtain high quality MgO-barrier MTJs, however, limit its integration with flexible electronics devices. In this work, we have developed a method to fabricate high-performance MgO-barrier MTJs directly onto ultrathin flexible silicon membrane with a thickness of 14 μm and then transfer-and-bond to plastic substrates. Remarkably, such flexible MTJs are fully functional, exhibiting a TMR ratio as high as 190% under bending radii as small as 5 mm. The devices‘ robustness is manifested by its retained excellent performance and unaltered TMR ratio after over 1000 bending cycles. The demonstrated flexible MgO-barrier MTJs opens the door to integrating high-performance spintronic devices in flexible and wearable electronics devices for a plethora of biomedical sensing applications. PMID:28150807

  12. Hard-hard coupling assisted anomalous magnetoresistance effect in amine-ended single-molecule magnetic junction

    Science.gov (United States)

    Tang, Y.-H.; Lin, C.-J.; Chiang, K.-R.

    2017-06-01

    We proposed a single-molecule magnetic junction (SMMJ), composed of a dissociated amine-ended benzene sandwiched between two Co tip-like nanowires. To better simulate the break junction technique for real SMMJs, the first-principles calculation associated with the hard-hard coupling between a amine-linker and Co tip-atom is carried out for SMMJs with mechanical strain and under an external bias. We predict an anomalous magnetoresistance (MR) effect, including strain-induced sign reversal and bias-induced enhancement of the MR value, which is in sharp contrast to the normal MR effect in conventional magnetic tunnel junctions. The underlying mechanism is the interplay between four spin-polarized currents in parallel and anti-parallel magnetic configurations, originated from the pronounced spin-up transmission feature in the parallel case and spiky transmission peaks in other three spin-polarized channels. These intriguing findings may open a new arena in which magnetotransport and hard-hard coupling are closely coupled in SMMJs and can be dually controlled either via mechanical strain or by an external bias.

  13. Quantum size effects on spin-transfer torque in a double barrier magnetic tunnel junction with a nonmagnetic-metal (semiconductor) spacer

    Energy Technology Data Exchange (ETDEWEB)

    Daqiq, Reza; Ghobadi, Nader

    2016-07-15

    We study the quantum size effects of an MgO-based double barrier magnetic tunnel junction with a nonmagnetic-metal (DBMTJ-NM) (semiconductor (DBMTJ-SC)) spacer on the charge current and the spin-transfer torque (STT) components using non-equilibrium Green's function (NEGF) formalism. The results show oscillatory behavior due to the resonant tunneling effect depending on the structure parameters. We find that the charge current and the STT components in the DBMTJ-SC demonstrate the magnitude enhancement in comparison with the DBMTJ-NM. The bias dependence of the STT components in a DBMTJ-NM shows different behavior in comparison with spin valves and conventional MTJs. Therefore, by choosing a specific SC spacer with suitable thickness in a DBMTJ the charge current and the STT components significantly increase so that one can design a device with high STT and faster magnetization switching. - Highlights: • The quantum size effects are studied in double barrier magnetic tunnel junctions. • Spin torque (ST) components oscillate for increasing of middle spacer thicknesses. • Due to the resonant tunneling in the quantum well, oscillations have appeared. • By replacement a metal spacer with a semiconductor (ZnO) ST has increased. • The ST components vs. bias show gradually decreasing unlike spin valves or MTJs.

  14. Agreement between static magnetic resonance urography and diuretic renal scintigraphy in patients with ureteropelvic junction obstruction after pyeloplasty.

    Science.gov (United States)

    Mazdak, Hamid; Karam, Mehdi; Ghassami, Fatemeh; Malekpour, Alireza

    2015-01-01

    Ureteropelvic junction obstruction (UPJO) is the most common cause of hydronephrosis within childhood that usually treat by surgery. According to anatomical variations in different individuals, scheduling similar procedures for all patients is not suitable, and thus the best decision for an appropriate surgical technique should be considered separately for each patient. Regardless of the type of applied technique, creating a funnel-shape UPJ with a suitable size is a successful treatment. In this context, the assessment of a successful surgical treatment in a short-term follow-up means repairing revealed anatomical defects. The present study aimed to compare the diagnostic value of static magnetic resonance urography (MRU) and diuretic-based renalscintigraphy (DRS) in patients with UPJO after pyeloplasty. A total of 30 consecutive patients with UPJO, who underwent unilateral pyeloplasty between 2012 and 2013 were assessed. All subjects underwent DRS and also MRU about 1-month after the former procedure. The Kendall's tau correlation showed a very strong correlation between results of MRU and diuretic renal scintigraphy (r = 0.932, P MRU to assess UPJO. MRU static fluid has a high accuracy for assessment of renal system anatomy. Due to the lack of dangerous consequences of contrast materials, MRU can be the best option instead of DRS.

  15. Alteration of Tight and Adherens Junctions on 50-Hz Magnetic Field Exposure in Madin Darby Canine Kidney (MDCK Cells

    Directory of Open Access Journals (Sweden)

    Zoltán Somosy

    2004-01-01

    Full Text Available Adherens (AJ and tight junctions (TJ, as integrated parts of the junctional complex, are multifunctional specialized regions of the cell membrane in epithelial cells. They are responsible for cell-to-cell interactions and also have great importance in cellular signaling processes including Wnt protein-mediated signals. As electromagnetic field (EMF exposure is known to cause alterations in the function as well as supramolecular organization of different cell contacts, our goal was to investigate the effect of 50-Hz magnetic field (MF exposures on the subcellular distribution of some representative structural proteins (occludin, β-catenin, and cadherin found in AJ and TJ. Additionally, cellular β-catenin content was also quantified by Western blot analysis. 50-Hz MF exposures seemed to increase the staining intensity (amount of occludin, cadherins, and β-catenin in the junctional area of MDCK cells, while Western blot data indicated the quantity of b-catenin was found significantly decreased at both time points after EM exposures. Our results demonstrate that MF are able to modify the distribution of TJ and AJ structural proteins, tending to stabilize these cell contacts. The quantitative changes of β-catenin suggest a causative relationship between MF effects on the cell junctional complex and the Wnt signaling pathway.

  16. First-principles study on magnetic tunneling junctions with semiconducting CuInSe2 and CuGaSe2 barriers

    Science.gov (United States)

    Masuda, Keisuke; Miura, Yoshio

    2017-02-01

    We theoretically investigate two magnetic tunneling junctions (MTJs) with different semiconductor barriers, CuInSe2 (CIS) and CuGaSe2 (CGS), sandwiched between Fe electrodes. We find that Δ1 wave functions provide dominant contributions to spin-dependent tunneling transport in both CIS- and CGS-based MTJs. We also find that the CGS-based MTJ has a much higher magnetoresistive (MR) ratio than the CIS-based MTJ, which indicates that a higher MR ratio is expected for a higher Ga concentration x in the recently reported CuIn1- x Ga x Se2-based MTJs. Furthermore, we show that the CIS- and CGS-based MTJs have much smaller resistance-area products (RA) than the conventional MgO-based MTJs.

  17. Four logic states of tunneling magnetoelectroresistance in ferromagnetic shape memory alloy based multiferroic tunnel junctions

    Science.gov (United States)

    Singh, Kirandeep; Kaur, Davinder

    2017-07-01

    This study illustrates the approach to obtain four logic states of ferromagnetic shape memory alloy based multiferroic tunnel junction (MFTJ). In order to achieve giant tunneling electroresistance (TER) and tunneling magnetoresistance (TMR), Ni-Mn-In and Ni-Mn-Sb layers were chosen as electrodes, as well as the concept of the composite barrier was adopted using the STO/PZT [SrTiO3, Strontium Titanate/PbZr0.52Ti0.48O3 (Lead Zirconate Titanate)] (dielectric/ferroelectric) barrier layer. Equated to MFTJ with a single PZT barrier, the introduction of a STO paraelectric (dielectric) barrier is shown to be effective in improving both the TER and TMR of the MFTJs. Particularly, the TER ratio is greatly enhanced by 168% {" separators="|relative TER change: (ΔT/E R T E R =T/ER 2-TE R 1 TE R 1 ×100 }). This is described in terms of the increased asymmetry in the electrostatic modulation on the barrier potential profile with respect to the Ferroelectric (FE) polarization direction. We show that due to the coupling between FE polarization and magnetization at the junction between the barrier and the electrode of a MFTJ, the spin polarization of the tunneling electrons can be reversibly and remanently flipped by switching the FE polarization of the barrier. In addition to the analysis of memory function, the exchange bias phenomena are also studied. A negative exchange bias field of "HEB" ˜-98 Oe occurred at 300 K in these bilayers.

  18. Multiferroic tunnel junctions and ferroelectric control of magnetic state at interface (invited)

    KAUST Repository

    Yin, Y. W.

    2015-03-03

    As semiconductor devices reach ever smaller dimensions, the challenge of power dissipation and quantum effect place a serious limit on the future device scaling. Recently, a multiferroic tunnel junction (MFTJ) with a ferroelectric barrier sandwiched between two ferromagnetic electrodes has drawn enormous interest due to its potential applications not only in multi-level data storage but also in electric field controlled spintronics and nanoferronics. Here, we present our investigations on four-level resistance states, giant tunneling electroresistance (TER) due to interfacial magnetoelectric coupling, and ferroelectric control of spin polarized tunneling in MFTJs. Coexistence of large tunneling magnetoresistance and TER has been observed in manganite/(Ba, Sr)TiO3/manganite MFTJs at low temperatures and room temperature four-resistance state devices were also obtained. To enhance the TER for potential logic operation with a magnetic memory, La0.7Sr0.3MnO3/BaTiO3/La0.5Ca0.5MnO3 /La0.7Sr0.3MnO3 MFTJs were designed by utilizing a bilayer tunneling barrier in which BaTiO3 is ferroelectric and La0.5Ca0.5MnO3 is close to ferromagnetic metal to antiferromagnetic insulator phase transition. The phase transition occurs when the ferroelectric polarization is reversed, resulting in an increase of TER by two orders of magnitude. Tunneling magnetoresistance can also be controlled by the ferroelectric polarization reversal, indicating strong magnetoelectric coupling at the interface.

  19. Manganese-based Permanent Magnets

    Directory of Open Access Journals (Sweden)

    Ian Baker

    2015-08-01

    Full Text Available There is a significant gap between the energy product, BH, where B is the magnetic flux density and H is the magnetic field strength, of both the traditional ferrite and AlNiCo permanent magnets of less than 10 MGOe and that of the rare earth magnets of greater than 30 MGOe. This is a gap that Mn-based magnets could potentially, inexpensively, fill. This Special Issue presents work on the development of both types of manganese permanent magnets. Some of the challenges involved in the development of these magnets include improving the compounds’ energy product, increasing the thermal stability of these metastable compounds, and producing them in quantity as a bulk material.[...

  20. Dependences of spin polarization on the control parameters in the spin-polarized injection through the magnetic p-n junction

    Institute of Scientific and Technical Information of China (English)

    Zhang Lei; Deng Ning; Ren Min; Dong Hao; Chen Pei-Yi

    2007-01-01

    Effective spin-polarized injection from magnetic semiconductor (MS) to nonmagnetic semiconductor (NMS) has been highlighted in recent years. In this paper we study theoretically the dependence of nonequilibrium spin polarization (NESP) in NMS during spin-polarized injection through the magnetic p-n junction. Based on the theory in semiconductor physics, a model is established and the boundary conditions are determined in the case of no external spin-polarized injection and low bias. The control parameters that may influence the NESP in NMS are indicated by calculating the distribution of spin polarization. They are the doping concentrations, the equilibrium spin polarization in MS and the bias. The effective spin-polarized injection can' be realized more easily by optimizing the above parameters.

  1. Quantum size effects on spin-transfer torque in a double barrier magnetic tunnel junction with a nonmagnetic-metal (semiconductor) spacer

    Science.gov (United States)

    Daqiq, Reza; Ghobadi, Nader

    2016-07-01

    We study the quantum size effects of an MgO-based double barrier magnetic tunnel junction with a nonmagnetic-metal (DBMTJ-NM) (semiconductor (DBMTJ-SC)) spacer on the charge current and the spin-transfer torque (STT) components using non-equilibrium Green's function (NEGF) formalism. The results show oscillatory behavior due to the resonant tunneling effect depending on the structure parameters. We find that the charge current and the STT components in the DBMTJ-SC demonstrate the magnitude enhancement in comparison with the DBMTJ-NM. The bias dependence of the STT components in a DBMTJ-NM shows different behavior in comparison with spin valves and conventional MTJs. Therefore, by choosing a specific SC spacer with suitable thickness in a DBMTJ the charge current and the STT components significantly increase so that one can design a device with high STT and faster magnetization switching.

  2. Effect of interfacial structures on spin dependent tunneling in epitaxial L1{sub 0}-FePt/MgO/FePt perpendicular magnetic tunnel junctions

    Energy Technology Data Exchange (ETDEWEB)

    Yang, G.; Li, D. L.; Wang, S. G., E-mail: Sgwang@iphy.ac.cn; Ma, Q. L.; Liang, S. H.; Wei, H. X.; Han, X. F. [State Key Laboratory of Magnetism, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Hesjedal, T.; Ward, R. C. C. [Clarendon Laboratory, Department of Physics, University of Oxford, Oxford OX1 3PU (United Kingdom); Kohn, A.; Elkayam, A.; Tal, N. [Department of Materials Engineering and the Ilse Katz Institute for Nanoscale Science and Technology, Ben-Gurion University of the Negev, Beer-Sheva 84105 (Israel); Zhang, X.-G. [Department of Physics and Quantum Theory Project, University of Florida, Gainesville, Florida 32611 (United States); Center for Nanophase Materials Sciences and Computer Science and Mathematics Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831-6493 (United States)

    2015-02-28

    Epitaxial FePt(001)/MgO/FePt magnetic tunnel junctions with L1{sub 0}-FePt electrodes showing perpendicular magnetic anisotropy were fabricated by molecular beam epitaxial growth. Tunnel magnetoresistance ratios of 21% and 53% were obtained at 300 K and 10 K, respectively. Our previous work, based on transmission electron microscopy, confirmed a semi-coherent interfacial structure with atomic steps (Kohn et al., APL 102, 062403 (2013)). Here, we show by x-ray photoemission spectroscopy and first-principles calculation that the bottom FePt/MgO interface is either Pt-terminated for regular growth or when an Fe layer is inserted at the interface, it is chemically bonded to O. Both these structures have a dominant role in spin dependent tunneling across the MgO barrier resulting in a decrease of the tunneling magnetoresistance ratio compared with previous predictions.

  3. Effect of Mg-Al insertion on magnetotransport properties in epitaxial Fe/sputter-deposited MgAl2O4/Fe(001) magnetic tunnel junctions

    Science.gov (United States)

    Belmoubarik, Mohamed; Sukegawa, Hiroaki; Ohkubo, Tadakatsu; Mitani, Seiji; Hono, Kazuhiro

    2017-05-01

    We investigated the effect of an Mg-Al layer insertion at the bottom interface of epitaxial Fe/MgAl2O4/Fe(001) magnetic tunnel junctions (MTJs) on their spin-dependent transport properties. The tunnel magnetoresistance (TMR) ratio and differential conductance spectra for the parallel magnetic configuration exhibited clear dependence on the inserted Mg-Al thickness. A slight Mg-Al insertion (thickness 0.2 nm) induced a reduction of TMR ratios and featureless conductance spectra, indicating a degradation of the bottom-Fe/MgAl2O4 interface. Therefore, a minimal Mg-Al insertion was found to be effective to maximize the TMR ratio for a sputtered MgAl2O4-based MTJ.

  4. Effect of Mg-Al insertion on magnetotransport properties in epitaxial Fe/sputter-deposited MgAl2O4/Fe(001 magnetic tunnel junctions

    Directory of Open Access Journals (Sweden)

    Mohamed Belmoubarik

    2017-05-01

    Full Text Available We investigated the effect of an Mg-Al layer insertion at the bottom interface of epitaxial Fe/MgAl2O4/Fe(001 magnetic tunnel junctions (MTJs on their spin-dependent transport properties. The tunnel magnetoresistance (TMR ratio and differential conductance spectra for the parallel magnetic configuration exhibited clear dependence on the inserted Mg-Al thickness. A slight Mg-Al insertion (thickness 0.2 nm induced a reduction of TMR ratios and featureless conductance spectra, indicating a degradation of the bottom-Fe/MgAl2O4 interface. Therefore, a minimal Mg-Al insertion was found to be effective to maximize the TMR ratio for a sputtered MgAl2O4-based MTJ.

  5. Charge transport and rectification in molecular junctions formed with carbon-based electrodes.

    Science.gov (United States)

    Kim, Taekyeong; Liu, Zhen-Fei; Lee, Chulho; Neaton, Jeffrey B; Venkataraman, Latha

    2014-07-29

    Molecular junctions formed using the scanning-tunneling-microscope-based break-junction technique (STM-BJ) have provided unique insight into charge transport at the nanoscale. In most prior work, the same metal, typically Au, Pt, or Ag, is used for both tip and substrate. For such noble metal electrodes, the density of electronic states is approximately constant within a narrow energy window relevant to charge transport. Here, we form molecular junctions using the STM-BJ technique, with an Au metal tip and a microfabricated graphite substrate, and measure the conductance of a series of graphite/amine-terminated oligophenyl/Au molecular junctions. The remarkable mechanical strength of graphite and the single-crystal properties of our substrates allow measurements over few thousand junctions without any change in the surface properties. We show that conductance decays exponentially with molecular backbone length with a decay constant that is essentially the same as that for measurements with two Au electrodes. More importantly, despite the inherent symmetry of the oligophenylamines, we observe rectification in these junctions. State-of-art ab initio conductance calculations are in good agreement with experiment, and explain the rectification. We show that the highly energy-dependent graphite density of states contributes variations in transmission that, when coupled with an asymmetric voltage drop across the junction, leads to the observed rectification. Together, our measurements and calculations show how functionality may emerge from hybrid molecular-scale devices purposefully designed with different electrodes beyond the so-called "wide band limit," opening up the possibility of assembling molecular junctions with dissimilar electrodes using layered 2D materials.

  6. IJS: An Intelligent Junction Selection Based Routing Protocol for VANET to Support ITS Services.

    Science.gov (United States)

    Bhoi, Sourav Kumar; Khilar, Pabitra Mohan

    2014-01-01

    Selecting junctions intelligently for data transmission provides better intelligent transportation system (ITS) services. The main problem in vehicular communication is high disturbances of link connectivity due to mobility and less density of vehicles. If link conditions are predicted earlier, then there is a less chance of performance degradation. In this paper, an intelligent junction selection based routing protocol (IJS) is proposed to transmit the data in a quickest path, in which the vehicles are mostly connected and have less link connectivity problem. In this protocol, a helping vehicle is set at every junction to control the communication by predicting link failures or network gaps in a route. Helping vehicle at the junction produces a score for every neighboring junction to forward the data to the destination by considering the current traffic information and selects that junction which has minimum score. IJS protocol is implemented and compared with GyTAR, A-STAR, and GSR routing protocols. Simulation results show that IJS performs better in terms of average end-to-end delay, network gap encounter, and number of hops.

  7. Co2Fe6B2/MgO-based perpendicular spin-transfer-torque magnetic-tunnel-junction spin-valve without [Co/Pt] n lower synthetic-antiferromagnetic layer.

    Science.gov (United States)

    Lee, Seung-Eun; Shim, Tae-Hun; Park, Jea-Gun

    2015-11-27

    We design a Co2Fe6B2/MgO-based p-MTJ spin-valve without a [Co/Pt] n lower synthetic-antiferromagnetic (SyAF) layer to greatly reduce the 12-inch wafer fabrication cost of the p-MTJ spin-valve. This spin-valve achieve a tunneling magnetoresistance (TMR) of 158% and an exchange field (H ex) of 1.4 kOe at an ex situ annealing temperature of >350 °C, which ensures writing error immunity. In particular, the TMR ratio strongly depends on the body-center-cubic capping-layer nanoscale thickness (t bcc), i.e., the TMR ratio peaks at t bcc = 0.6 nm.

  8. The manufacture and testing of magnetic tunnel junctions and a study of their switching characteristics Cobalt; Aluminium oxide; Permalloy; Sputtering; Thin films

    CERN Document Server

    Hughes, N D

    2002-01-01

    This thesis investigates the manufacture and switching characteristics of a series of cobalt/aluminium oxide/permalloy magnetic tunnel junctions. It describes the assembly and commissioning of the sputtering, magnetometry and electron transport measurement equipment required to manufacture and test the junctions. The junctions are made by sputtering thin films of the ferromagnetic materials and an ultra thin film of aluminium, which is oxidised by means of a DC glow discharge. The optimum oxidation conditions for the barrier are investigated and its characteristics determined by current-voltage modelling. The barrier thickness identified by the modelling is compared with that found by x-ray reflectometry. A simple single domain model is shown to give a reasonable fit to hysteresis and magneto-resistive data from the junctions and to provide a means to quantify the interlayer coupling. A comparative study of the magneto-resistive characteristics of junctions with ferromagnetic layers of 10nm and 100nm finds th...

  9. A rare nucleotide base tautomer in the structure of an asymmetric DNA junction.

    Science.gov (United States)

    Khuu, Patricia; Ho, P Shing

    2009-08-25

    The single-crystal structure of a DNA Holliday junction assembled from four unique sequences shows a structure that conforms to the general features of models derived from similar constructs in solution. The structure is a compact stacked-X form junction with two sets of stacked B-DNA-type arms that coaxially stack to form semicontinuous duplexes interrupted only by the crossing of the junction. These semicontinuous helices are related by a right-handed rotation angle of 56.5 degrees, which is nearly identical to the 60 degree angle in the solution model but differs from the more shallow value of approximately 40 degrees for previous crystal structures of symmetric junctions that self-assemble from single identical inverted-repeat sequences. This supports the model in which the unique set of intramolecular interactions at the trinucleotide core of the crossing strands, which are not present in the current asymmetric junction, affects both the stability and geometry of the symmetric junctions. An unexpected result, however, is that a highly wobbled A.T base pair, which is ascribed here to a rare enol tautomer form of the thymine, was observed at the end of a CCCC/GGGG sequence within the stacked B-DNA arms of this 1.9 A resolution structure. We suggest that the junction itself is not responsible for this unusual conformation but served as a vehicle for the study of this CG-rich sequence as a B-DNA duplex, mimicking the form that would be present in a replication complex. The existence of this unusual base lends credence to and defines a sequence context for the "rare tautomer hypothesis" as a mechanism for inducing transition mutations during DNA replication.

  10. A compact model for magnetic tunnel junction (MTJ) switched by thermally assisted Spin transfer torque (TAS + STT)

    Science.gov (United States)

    Zhao, Weisheng; Duval, Julien; Klein, Jacques-Olivier; Chappert, Claude

    2011-12-01

    Thermally assisted spin transfer torque [TAS + STT] is a new switching approach for magnetic tunnel junction [MTJ] nanopillars that represents the best trade-off between data reliability, power efficiency and density. In this paper, we present a compact model for MTJ switched by this approach, which integrates a number of physical models such as temperature evaluation and STT dynamic switching models. Many experimental parameters are included directly to improve the simulation accuracy. It is programmed in the Verilog-A language and compatible with the standard IC CAD tools, providing an easy parameter configuration interface and allowing high-speed co-simulation of hybrid MTJ/CMOS circuits.

  11. A compact model for magnetic tunnel junction (MTJ) switched by thermally assisted Spin transfer torque (TAS + STT).

    Science.gov (United States)

    Zhao, Weisheng; Duval, Julien; Klein, Jacques-Olivier; Chappert, Claude

    2011-04-28

    Thermally assisted spin transfer torque [TAS + STT] is a new switching approach for magnetic tunnel junction [MTJ] nanopillars that represents the best trade-off between data reliability, power efficiency and density. In this paper, we present a compact model for MTJ switched by this approach, which integrates a number of physical models such as temperature evaluation and STT dynamic switching models. Many experimental parameters are included directly to improve the simulation accuracy. It is programmed in the Verilog-A language and compatible with the standard IC CAD tools, providing an easy parameter configuration interface and allowing high-speed co-simulation of hybrid MTJ/CMOS circuits.

  12. A link between the coercivity and microstructure of high moment Fe films and their use in magnetic tunnel junctions

    Energy Technology Data Exchange (ETDEWEB)

    Georgieva, M.T. [Institute for Materials Research, Maxwell Building, The University of Salford, Salford M5 4WT (United Kingdom)]. E-mail: milena.georgieva@mdm.infm.it; Telling, N.D. [Institute for Materials Research, Maxwell Building, The University of Salford, Salford M5 4WT (United Kingdom); Magnetic Spectroscopy Group, CCLRC Daresbury Laboratory, Warrington WA4 4AD (United Kingdom); Grundy, P.J. [Institute for Materials Research, Maxwell Building, The University of Salford, Salford M5 4WT (United Kingdom)

    2006-01-25

    Magnetron sputtered single Fe films have been 'softened' magnetically by controlled N-doping during the sputter deposition. This technique allows a reduction in grain size and coercivity of the Fe films, without decreasing the saturation magnetization and without the formation of any crystalline FeN phases. We describe this effect through a modification of the random magnetocrystalline anisotropy model, by taking the film thickness into account. The coercivities calculated in this way are in good agreement with those obtained experimentally. It is demonstrated that N-doping can be samples increased as to control the switching field of the 'free' layer in magnetic trilayer films of the MTJ type. It is thus possible to construct an all Fe-electrode magnetic tunnel junction (MTJ) that displays the tunneling magnetoresistance (TMR) effect by altering the switching field of one Fe layer using N-doping. The ability to control the magnetic softness of high magnetic moment materials is important in regard to their incorporation into TMR devices.

  13. Josephson current in Fe-based superconducting junctions: theory and experiment

    NARCIS (Netherlands)

    Burmistrova, A.V.; Devyatov, I.A.; Golubov, A.; Yada, K.; Tanaka, Y.; Tortello, M.; Gonnelli, R.S.; Stepanov, V.A.; Ding, X.X.; Wen, H.H.; Green, L.H.

    2015-01-01

    We present a theory of the dc Josephson effect in contacts between Fe-based and spin-singlet s-wave superconductors. The method is based on the calculation of temperature Green's function in the junction within the tight-binding model. We calculate the phase dependencies of the Josephson current for

  14. Lateral resistance reduction induced by light-controlled leak current in silicon-based Schottky junction

    Institute of Scientific and Technical Information of China (English)

    王拴虎; 张勖; 邹吕宽; 赵靓; 王文鑫; 孙继荣

    2015-01-01

    Lateral resistance of silicon-based p-type and n-type Schottky junctions is investigated. After one electrode on a metallic film is irradiated, the differential lateral resistance of the system is dependent on the direction of the bias current:it keeps constant in one direction and decreases in the opposite direction. By systematically investigating the electrical potential changes in silicon and the junction, we propose a new mechanism based on light-controlled leak current. Our work provides an insight into the nature of this phenomenon and will facilitate the advanced design of switchable devices.

  15. Efficient electronic coupling and improved stability with dithiocarbamate-based molecular junctions

    Science.gov (United States)

    von Wrochem, Florian; Gao, Deqing; Scholz, Frank; Nothofer, Heinz-Georg; Nelles, Gabriele; Wessels, Jurina M.

    2010-08-01

    Molecular electronic devices require stable and highly conductive contacts between the metal electrodes and molecules. Thiols and amines are widely used to attach molecules to metals, but they form poor electrical contacts and lack the robustness required for device applications. Here, we demonstrate that dithiocarbamates provide superior electrical contact and thermal stability when compared to thiols on metals. Ultraviolet photoelectron spectroscopy and density functional theory show the presence of electronic states at 0.6 eV below the Fermi level of Au, which effectively reduce the charge injection barrier across the metal-molecule interface. Charge transport measurements across oligophenylene monolayers reveal that the conductance of terphenyl-dithiocarbamate junctions is two orders of magnitude higher than that of terphenyl-thiolate junctions. The stability and low contact resistance of dithiocarbamate-based molecular junctions represent a significant step towards the development of robust, organic-based electronic circuits.

  16. Effect of coupling ability between a synthetic antiferromagnetic layer and pinned layer on a bridging layer of Ta, Ti, and Pt in perpendicular-magnetic tunnel junctions.

    Science.gov (United States)

    Lee, Du-Yeong; Shim, Tae-Hun; Park, Jea-Gun

    2016-07-22

    By fabricating CoFeB/MgO/CoFeB-based perpendicular-magnetic tunnel junction (p-MTJ) spin-valves stacked with a [Co/Pd] n -SyAF layer based on a TiN bottom electrode on a 12 inch Si wafer (001) substrate, we investigated how the bridging layers of Ta, Ti, and Pt and their thickness variation affected the tunneling magneto-resistance (TMR) ratio of Co2Fe6B2 pinned-layer behavior in magnetic-tunnel-junctions. TMR ratios for Ta, Ti, and Pt bridging layers were observed to be 64.1, 70.2, and 29.5%, respectively. It was confirmed by high resolution transmission electron microscopy (HR-TEM) that this difference resulted from CoFeB/MgO/CoFeB MTJ layers with Ta and Ti bridging layers being textured well with a bcc (100) structure, indicating that Ta and Ti bridging layers bridged SyAF fcc (111) and MTJ bcc (100). On the other hand, the MTJ layer with Pt bridging layer was incorrectly textured, indicating that a Pt bridging layer is unsuitable to bridge SyAF fcc (111) and MTJ bcc (100) due to Pt being diffused into the CoFeB pinned-layer. In addition, perpendicular magnetic anisotropy (PMA) behavior of the CoFeB pinned-layer was found to depend strongly on a bridging layer thickness; higher TMRs of Ta and Ti were observed at the optimal bridging layers' thickness, which enable the realization of PMAs of the pinned-layer and ferro-coupling of the pinned-layer with the lower-SyAF layer. Among the three bridging materials (Ta, Ti, and Pt), we observed that Ti showed the highest TMR ratio and widest thickness range for a high TMR ratio, indicating that a higher TMR ratio is needed to obtain the best deposition process margin.

  17. Effect of coupling ability between a synthetic antiferromagnetic layer and pinned layer on a bridging layer of Ta, Ti, and Pt in perpendicular-magnetic tunnel junctions

    Science.gov (United States)

    Lee, Du-Yeong; Shim, Tae-Hun; Park, Jea-Gun

    2016-07-01

    By fabricating CoFeB/MgO/CoFeB-based perpendicular-magnetic tunnel junction (p-MTJ) spin-valves stacked with a [Co/Pd] n -SyAF layer based on a TiN bottom electrode on a 12 inch Si wafer (001) substrate, we investigated how the bridging layers of Ta, Ti, and Pt and their thickness variation affected the tunneling magneto-resistance (TMR) ratio of Co2Fe6B2 pinned-layer behavior in magnetic-tunnel-junctions. TMR ratios for Ta, Ti, and Pt bridging layers were observed to be 64.1, 70.2, and 29.5%, respectively. It was confirmed by high resolution transmission electron microscopy (HR-TEM) that this difference resulted from CoFeB/MgO/CoFeB MTJ layers with Ta and Ti bridging layers being textured well with a bcc (100) structure, indicating that Ta and Ti bridging layers bridged SyAF fcc (111) and MTJ bcc (100). On the other hand, the MTJ layer with Pt bridging layer was incorrectly textured, indicating that a Pt bridging layer is unsuitable to bridge SyAF fcc (111) and MTJ bcc (100) due to Pt being diffused into the CoFeB pinned-layer. In addition, perpendicular magnetic anisotropy (PMA) behavior of the CoFeB pinned-layer was found to depend strongly on a bridging layer thickness; higher TMRs of Ta and Ti were observed at the optimal bridging layers’ thickness, which enable the realization of PMAs of the pinned-layer and ferro-coupling of the pinned-layer with the lower-SyAF layer. Among the three bridging materials (Ta, Ti, and Pt), we observed that Ti showed the highest TMR ratio and widest thickness range for a high TMR ratio, indicating that a higher TMR ratio is needed to obtain the best deposition process margin.

  18. Effects of in-plane magnetization orientation on magnetic and electronic properties in a Bcc Co (001)/rock salt MgO (001)/Bcc Co (001) magnetic tunnel junction system: ab initio calculations.

    Science.gov (United States)

    Yoo, Dong Su; Chae, Kisung; Chung, Yong-Chae

    2012-04-01

    Ab initio calculations were performed on a fully epitaxial bcc Co (001)/rock salt MgO (001)/bcc Co (001) magnetic tunnel junction system for two cases where the magnetization is parallel to bcc Co [100] and to bcc Co [110]. Structural optimization reveals that the two cases are equivalent systems and that the Co electrodes contract in the z-direction whereas the MgO insulating barrier expands. The magnetic moments of each monolayer vary slightly in each case; furthermore, only the magnetic moment at the surface of the Co atom shows any enhancement (12%). The layer decomposed density of states profiles reveals that the bonding character of the junction interface is derived mainly from the 2p-3d hybridization of the MgO and Co interfacial atoms.

  19. Tunnel magnetoresistance in full-epitaxial magnetic tunnel junctions with a top electrode consisting of a perpendicularly magnetized D022-Mn3Ge film

    Science.gov (United States)

    Sugihara, Atsushi; Suzuki, Kazuya; Miyazaki, Terunobu; Mizukami, Shigemi

    2015-07-01

    We grew a magnetic tunnel junction (MTJ) with a top electrode consisting of a Mn3Ge film using a thin Co-Fe alloy film as a seed layer. X-ray diffraction showed that the Mn3Ge had (001)-oriented D022 structure epitaxially grown on an MgO(001) substrate. Magnetic hysteresis loops suggested that the D022-Mn3Ge film possessed perpendicular magnetic anisotropy. A magnetoresistance (MR) ratio of 11.3% was observed in the microfabricated MTJ at room temperature. The resistance-field curve suggested that the top-Co-Fe and D022-Mn3Ge layer are weakly coupled antiferromagnetically. The optimization of top-Co-Fe composition would improve MR ratio.

  20. Competing Anisotropy-Tunneling Correlation of the CoFeB/MgO Perpendicular Magnetic Tunnel Junction: An Electronic Approach.

    Science.gov (United States)

    Yang, Chao-Yao; Chang, Shu-Jui; Lee, Min-Han; Shen, Kuei-Hung; Yang, Shan-Yi; Lin, Horng-Ji; Tseng, Yuan-Chieh

    2015-11-24

    We intensively investigate the physical principles regulating the tunneling magneto-resistance (TMR) and perpendicular magnetic anisotropy (PMA) of the CoFeB/MgO magnetic tunnel junction (MTJ) by means of angle-resolved x-ray magnetic spectroscopy. The angle-resolved capability was easily achieved, and it provided greater sensitivity to symmetry-related d-band occupation compared to traditional x-ray spectroscopy. This added degree of freedom successfully solved the unclear mechanism of this MTJ system renowned for controllable PMA and excellent TMR. As a surprising discovery, these two physical characteristics interact in a competing manner because of opposite band-filling preference in space-correlated symmetry of the 3d-orbital. An overlooked but harmful superparamagnetic phase resulting from magnetic inhomogeneity was also observed. This important finding reveals that simultaneously achieving fast switching and a high tunneling efficiency at an ultimate level is improbable for this MTJ system owing to its fundamental limit in physics. We suggest that the development of independent TMR and PMA mechanisms is critical towards a complementary relationship between the two physical characteristics, as well as the realization of superior performance, of this perpendicular MTJ. Furthermore, this study provides an easy approach to evaluate the futurity of any emerging spintronic candidates by electronically examining the relationship between their magnetic anisotropy and transport.

  1. Thermoelectric effects of the single-spin state in the ferromagnetic-normal junction with artificial magnetic impurities

    Science.gov (United States)

    Xu, Li; Li, Zhi-Jian; Hou, Hai-Yan; Niu, Pengbin; Nie, Yi-Hang

    2016-10-01

    We theoretically analyze the thermoelectric properties of the single-spin state based on the resonant tunneling of electron in the ferromagnetic-normal junction with artificial magnetic impurities. The thermoelectric coefficients, such as electrical conductance G, thermal conductance K, thermopower S and effective figure of merit Y, have been calculated using the nonequilibrium Green function in the linear regime. It is found that the thermoelectric coefficients can achieve considerable values by adjusting key parameters of the hybrid mesoscopic structure, such as the level detuning, the interdot hopping coefficient, the external magnetic field and the angle θ. When the level detuning changes, the spectra of electrical conductance and thermal conductance exhibit the electronic Dicke-like effect in the low temperature. Two valleys of electrical conductance and thermal conductance are always located at the single-spin level of QD2 ({{\\varepsilon}2\\uparrow} and ~{{\\varepsilon}2\\downarrow} ), and can achieve the antiresonant point by adjusting the interdot hopping coefficient. Thermoelectric coefficients can achieve considerable values near valleys because the Wiedemann-Franz law is strongly violated. Thermopower S and effective figure of merit Y can get larger values in the vicinity of {{\\varepsilon}2\\uparrow} by adjusting key parameters of the hybrid mesoscopic structure, such as the level detuning, the interdot hopping coefficient and the polarization. But the thermoelectric effect is reversed by changing the angle θ. When the angle θ increases, S and Y are suppressed in the vicinity of {{\\varepsilon}2\\uparrow}, meanwhile, S and Y are enhanced in the vicinity of {{\\varepsilon}2\\downarrow}. {χ+}=\\cos \\fracθ{2}|\\uparrow >+\\sin \\fracθ{2}|\\downarrow > shows that an electron in the state {χ+} can virtually tunnel into the spin-up (or spin-down) state of the ferromagnet. The amplitude of electron tunneling is \\cos \\fracθ{2} (or \\sin \\fracθ{2

  2. Fast and efficient silicon thermo-optic switching based on reverse breakdown of pn junction.

    Science.gov (United States)

    Li, Xianyao; Xu, Hao; Xiao, Xi; Li, Zhiyong; Yu, Yude; Yu, Jinzhong

    2014-02-15

    We propose and demonstrate a fast and efficient silicon thermo-optic switch based on reverse breakdown of the pn junction. Benefiting from the direct heating of silicon waveguide by embedding the pn junction into the waveguide center, fast switching with on/off time of 330 and 450 ns and efficient thermal tuning of 0.12  nm/mW for a 20 μm radius microring resonator are achieved, indicating a high figure of merit of only 8.8  mW·μs. The results here show great potential for application in the future optical interconnects.

  3. Urea biosensor based on an extended-base bipolar junction transistor.

    Science.gov (United States)

    Sun, Tai-Ping; Shieh, Hsiu-Li; Liu, Chun-Lin; Chen, Chung-Yuan

    2014-01-01

    In this study, a urea biosensor was prepared by the immobilization of urease onto the sensitive membrane of an extended-base bipolar junction transistor. The pH variation was used to detect the concentration of urea. The SnO2/ITO glass, fabricated by sputtering SnO2 on the conductive ITO glass, was used as a pH-sensitive membrane, which was connected with a commercial bipolar junction transistor device. The gels, fabricated by the poly vinyl alcohol with pendent styrylpyridinium groups, were used to immobilize the urease. This readout circuit, fabricated in a 0.35-um CMOS 2P4M process, operated at 3.3V supply voltage. This circuit occupied an area of 1.0 mm × 0.9 mm. The dynamic range of the urea biosensor was from 1.4 to 64 mg/dl at the 10 mM phosphate buffer solution and the sensitivity of this range was about 65.8 mV/pUrea. The effect of urea biosensors with different pH values was considered, and the characteristics of urea biosensors based on EBBJT were described.

  4. Quantum interference effects at room temperature in OPV-based single-molecule junctions

    DEFF Research Database (Denmark)

    Arroyo, Carlos R.; Frisenda, Riccardo; Moth-Poulsen, Kasper;

    2013-01-01

    Interference effects on charge transport through an individual molecule can lead to a notable modulation and suppression on its conductance. In this letter, we report the observation of quantum interference effects occurring at room temperature in single-molecule junctions based on oligo(3...

  5. Effect of Mo insertion layers on the magnetoresistance and perpendicular magnetic anisotropy in Ta/CoFeB/MgO junctions

    Science.gov (United States)

    Almasi, H.; Xu, M.; Xu, Y.; Newhouse-Illige, T.; Wang, W. G.

    2016-07-01

    The effect of a thin Mo dusting layer inserted at the interface of Ta/CoFeB of perpendicular magnetic tunneling junction with MgO barriers was investigated. Unlike thick Mo layers that exhibited a strong (110) crystalline texture, the inserted Mo layer between Ta/CoFeB had little negative influence on the crystallization of CoFe (001), therefore combining the advantages of Mo as a good thermal barrier and Ta as a good boron sink. For optimized Mo dusting thickness, a large tunneling magnetoresistance of 208% was achieved in perpendicular magnetic tunneling junctions with superior thermal stability at 500 °C.

  6. Radial junctions formed by conformal chemical doping for innovative hole-based solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Garozzo, C.; Giannazzo, F.; Italia, M.; La Magna, A.; Privitera, V. [Consiglio Nazionale delle Ricerche – Istituto per la Microelettronica e Microsistemi, Ottava Strada 5, Zona Industriale, 95121 Catania (Italy); Puglisi, R.A., E-mail: rosaria.puglisi@imm.cnr.it [Consiglio Nazionale delle Ricerche – Istituto per la Microelettronica e Microsistemi, Ottava Strada 5, Zona Industriale, 95121 Catania (Italy)

    2013-05-15

    In this paper an innovative approach for Si solar cells based on radial junctions is presented. It consists of fabricating the junction in quasi one-dimensional structures like holes. The hole-based architecture, while maintaining the decoupling between the light absorption and the electrical collection typical of the more common wires and rods, ensures more robustness, numerous waveguide coupling modes and possibility to form non-conformal top contact. Nanosizes also provide the possibility to tune the band gap by quantum effects. Doping of the nanoholes, like in the case of nanowires, presents critical issues like conformality and control of the dopant dose and junction depth at nanometric level. We propose to dope the nanoholes by using a chemical method based on the use of a dopant containing molecules dispersed in solution. We apply the procedure on an array of holes of micrometric sizes fabricated to test and study the method and to properly scale it down and implement it on the nanostructures. Results show that the method provides junction depths in the nm scale with dopant peak concentrations as high as 10{sup 19} cm{sup −3} and that the doping is conformal on the vertical surfaces of the hole.

  7. State diagram of a perpendicular magnetic tunnel junction driven by spin transfer torque: A power dissipation approach

    Science.gov (United States)

    Lavanant, M.; Petit-Watelot, S.; Kent, A. D.; Mangin, S.

    2017-04-01

    The state diagram of a magnetic tunnel junction with perpendicularly magnetized electrodes in the presence of spin-transfer torques is computed in a macrospin approximation using a power dissipation model. Starting from the macrospin's energy we determine the stability of energy extremum in terms of power received and dissipated, allowing the consideration of non-conservative torques associated with spin transfer and damping. The results are shown to be in agreement with those obtained by direct integration of the Landau-Lifshitz-Gilbert-Slonczewski equation. However, the power dissipation model approach is faster and shows the reason certain magnetic states are stable, such as states that are energy maxima but are stabilized by spin transfer torque. Breaking the axial system, such as by a tilted applied field or tilted anisotropy, is shown to dramatically affect the state diagrams. Finally, the influence of a higher order uniaxial anisotropy that can stabilize a canted magnetization state is considered and the results are compared to experimental data.

  8. Dispersion relation for localized magnetic polaritons propagating at the junction of two ferromagnetic/ non-magnetic superlattices

    Indian Academy of Sciences (India)

    R T Tagiyeva

    2004-09-01

    Localized magnetic polaritons are investigated in the systems consisting of two magnetic superlattices, coupled by a ferromagnetic contact layer. The general dispersion relation for localized magnetic polaritons are derived in the framework of the electromagnetic wave theory in the Voigt geometry by the `transfer' matrix method. The numerical calculations were carried out for different parameters of the superlattices and contact layer and then discussed.

  9. Effect of eccentricity on junction and junctionless based silicon nanowire and silicon nanotube FETs

    Science.gov (United States)

    Scarlet, S. Priscilla; Ambika, R.; Srinivasan, R.

    2017-07-01

    In this paper, the effect of eccentricity on Junction-based Silicon Nanowire FET, Junction-based Silicon Nanotube FET, Junctionless-based Silicon Nanowire FET, and Junctionless-based Silicon Nanotube FET is investigated. Three kinds of eccentric structures are considered here. The impact of eccentricity on effective gate oxide thickness thereby gate oxide capacitance, and effective channel width are studied using 3D numerical simulations. Average radius of an ellipse is used to generate a model which captures the impact of eccentricity on gate oxide capacitance, and verified using TCAD simulations in MOS nanowire structure. The impact of eccentricity on ON current (ION), OFF current (IOFF), ION/IOFF ratio, and Unity gain cutoff frequency are investigated. Eccentricity increases the effective gate oxide thickness, the effective channel width, ION, and IOFF but reduces ION/IOFF ratio.

  10. Spin transfer torque in non-collinear magnetic tunnel junctions exhibiting quasiparticle bands: a non-equilibrium Green's function study

    Science.gov (United States)

    Jaya, Selvaraj Mathi

    2017-06-01

    A non-equilibrium Green's function formulation to study the spin transfer torque (STT) in non-collinear magnetic tunnel junctions (MTJs) exhibiting quasiparticle bands is developed. The formulation can be used to study the magnetoresistance and spin current too. The formulation is used to study the STT in model tunnel junctions exhibiting multiple layers and quasiparticle bands. The many body interaction that gives rise to quasiparticle bands is assumed to be a s - f exchange interaction at the electrode regions of the MTJ. The quasiparticle bands are obtained using a many body procedure and the single particle band structure is obtained using the tight binding model. The bias dependence of the STT as well as the influence of band occupancy and s - f exchange coupling strength on the STT are studied. We find from our studies that the band occupancy plays a significant role in deciding the STT and the s - f interaction strength too influences the STT significantly. Anomalous behavior in both the parallel and perpendicular components of the STT is obtained from our studies. Our results obtained for certain values of the band occupation are found to show the trend observed from the experimental measurements of STT.

  11. Negative tunneling magnetoresistance of Fe/MgO/NiO/Fe magnetic tunnel junction: Role of spin mixing and interface state

    Science.gov (United States)

    Zhang, Y.; Yan, X. H.; Guo, Y. D.; Xiao, Y.

    2017-08-01

    Motivated by a recent tunneling magnetoresistance (TMR) measurement in which the negative TMR is observed in MgO/NiO-based magnetic tunnel junctions (MTJs), we have performed systematic calculations of transmission, current, and TMR of Fe/MgO/NiO/Fe MTJ with different thicknesses of NiO and MgO layers based on noncollinear density functional theory and non-equilibrium Green's function theory. The calculations show that, as the thickness of NiO and MgO layers is small, the negative TMR can be obtained which is attributed to the spin mixing effect and interface state. However, in the thick MTJ, the spin-flipping scattering becomes weaker, and thus, the MTJs recover positive TMR. Based on our theoretical results, we believe that the interface state at Fe/NiO interface and the spin mixing effect induced by noncollinear interfacial magnetization will play important role in determining transmission and current of Fe/MgO/NiO/Fe MTJ. The results reported here will be important in understanding the electron tunneling in MTJ with the barrier made by transition metal oxide.

  12. Tunneling conductance studies in the ion-beam sputtered CoFe/Mg/MgO/NiFe magnetic tunnel junctions

    Energy Technology Data Exchange (ETDEWEB)

    Singh, Braj Bhusan; Chaudhary, Sujeet [Thin Film Laboratory, Department of Physics, Indian Institute of Technology Delhi, New Delhi 110016 (India)

    2013-06-03

    Magnetic tunnel junctions consisting of CoFe(10 nm)/Mg(1 nm)/MgO(3.5 nm)/NiFe(10 nm) are grown at room temperature using dual ion beam sputtering via in-situ shadow masking. The effective barrier thickness and average barrier height are estimated to be 3.5 nm (2.9 nm) and 0.69 eV (1.09 eV) at 290 K (70 K), respectively. The tunnel magnetoresistance value of 0.2 % and 2.3 % was observed at 290 K and 60 K, respectively. The temperature dependence of tunneling conductance revealed the presence of localized states present within the forbidden gap of the MgO barrier leading to finite inelastic spin independent tunneling contributions, which degrade the TMR value.

  13. A compact model for magnetic tunnel junction (MTJ switched by thermally assisted Spin transfer torque (TAS + STT

    Directory of Open Access Journals (Sweden)

    Zhao Weisheng

    2011-01-01

    Full Text Available Abstract Thermally assisted spin transfer torque [TAS + STT] is a new switching approach for magnetic tunnel junction [MTJ] nanopillars that represents the best trade-off between data reliability, power efficiency and density. In this paper, we present a compact model for MTJ switched by this approach, which integrates a number of physical models such as temperature evaluation and STT dynamic switching models. Many experimental parameters are included directly to improve the simulation accuracy. It is programmed in the Verilog-A language and compatible with the standard IC CAD tools, providing an easy parameter configuration interface and allowing high-speed co-simulation of hybrid MTJ/CMOS circuits.

  14. Analysis of single-event upset of magnetic tunnel junction used in spintronic circuits caused by radiation-induced current

    Energy Technology Data Exchange (ETDEWEB)

    Sakimura, N., E-mail: n-sakimura@ap.jp.nec.com [Green Platform Research Laboratories, NEC Corporation, Tsukuba (Japan); Research Institute of Electrical Communication, Tohoku University, Sendai (Japan); Nebashi, R.; Sugibayashi, T. [Green Platform Research Laboratories, NEC Corporation, Tsukuba (Japan); Natsui, M.; Hanyu, T. [Research Institute of Electrical Communication, Tohoku University, Sendai (Japan); Ohno, H. [Research Institute of Electrical Communication, Tohoku University, Sendai (Japan); Center for Spintronics Integrated Systems, Tohoku University, Sendai (Japan); WPI Advanced Institute for Materials Research, Tohoku University, Sendai (Japan)

    2014-05-07

    This paper describes the possibility of a switching upset of a magnetic tunnel junction (MTJ) caused by a terrestrial radiation-induced single-event-upset (SEU) current in spintronic integrated circuits. The current waveforms were simulated by using a 3-D device simulator in a basic circuit including MTJs designed using 90-nm CMOS parameters and design rules. The waveforms have a 400 -μA peak and a 200-ps elapsed time when neutron particles with a linear energy transfer value of 14 MeV cm{sup 2}/mg enter the silicon surface. The authors also found that the SEU current may cause soft errors with a probability of more than 10{sup −12} per event, which was obtained by approximate solution of the ordinary differential equation of switching probability when the intrinsic critical current (I{sub C0}) became less than 30 μA.

  15. Position resolution of a double junction superconductive detector based on a single material

    Science.gov (United States)

    Samedov, V. V.

    2008-02-01

    The Naples group from Istituto Nazionale di Fisica Nucleare presented the results of theoretical investigations of a new class of superconductive radiation detectors - double junction superconductive detector based on a single material [1]. In such detectors, the absorption of energy occurs in a long superconductive strip while two superconductive tunnel junctions positioned at the ends of the strip provide the readout of the signals. The main peculiarity of this type of detectors is that they are based on a single superconducting material, i.e., without trapping layers at the ends of the strip. In this paper, general approach to the position resolution of this type of detectors has been attempted. The formula for the position resolution is derived. It is shown that the application of the aluminium for the absorber may be the best possible way not only due to the small gap energy, but also mainly for STJ fabrication technology based on the aluminium oxide tunnel barrier.

  16. Properties of pseudospin polarization on a graphene-based spin singlet superconducting junction

    Institute of Scientific and Technical Information of China (English)

    Jia Shuan-Wen; Wang Jun-Tao; Yang Yan-Ling; Bai Chun-Xu

    2013-01-01

    We investigate theoretically transport characteristics in a graphene-based pseudospinmagnet/superconductor junction,including the s-wave and the d-wave pairing symmetry potential in the superconducting region.It is found that the pseudospin polarization,in sharp contrast to spin polarization in the graphene-based ferromagnet/superconductor junction,holds no influence on the specular Andreev reflection for a negligible Fermi energy.Furthermore,the Fano factor is crucially affected by the zero bias state.Therefore,we suggest here that the findings could shed light on the realization of graphene-based pseudospintronics devices and provide a new way to detect the specular Andreev reflection and the zero bias state in the actual experiments.

  17. Compact-device model development for the energy-delay analysis of magneto-electric magnetic tunnel junction structures

    Science.gov (United States)

    Sharma, N.; Bird, J. P.; Dowben, P. A.; Marshall, A.

    2016-06-01

    We discuss the application of a novel class of device, the magneto-electric magnetic tunnel junction (ME-MTJ) to realize a variety of computational functions, including majority logic and the XNOR/XOR gate. We also develop a compact model to describe the operation of these devices, which function by utilizing the phenomenon of ‘voltage-controlled magnetism’ to switch the operational state of MTJs. The model breaks down the switching process into three key stages of operation: electrical-to-magnetic conversion, magnetization transfer, and final-state readout. Estimates for the switching energy and delay of these devices, obtained from this compact model, reveal significant improvements in both of these parameters when compared to conventional MTJs switched by spin-transfer-torque. In fact, the capacity to use the ME-MTJ to implement complex logical operations within a single device allows its energy costs to even approach those of low-power CMOS. The added benefits of non-volatility and compact circuit footprint, combined with their potential for heterogeneous integration with CMOS, make the ME devices of considerable interest for post-CMOS technology.

  18. Susceptibility of CoFeB/AlOx/Co Magnetic Tunnel Junctions to Low-Frequency Alternating Current

    Directory of Open Access Journals (Sweden)

    Yuan-Tsung Chen

    2013-10-01

    Full Text Available This investigation studies CoFeB/AlOx/Co magnetic tunneling junction (MTJ in the magnetic field of a low-frequency alternating current, for various thicknesses of the barrier layer AlOx. The low-frequency alternate-current magnetic susceptibility (χac and phase angle (θ of the CoFeB/AlOx/Co MTJ are determined using an cac analyzer. The driving frequency ranges from 10 to 25,000 Hz. These multilayered MTJs are deposited on a silicon substrate using a DC and RF magnetron sputtering system. Barrier layer thicknesses are 22, 26, and 30 Å. The X-ray diffraction patterns (XRD include a main peak at 2θ = 44.7° from hexagonal close-packed (HCP Co with a highly (0002 textured structure, with AlOx and CoFeB as amorphous phases. The full width at half maximum (FWHM of the Co(0002 peak, decreases as the AlOx thickness increases; revealing that the Co layer becomes more crystalline with increasing thickness. χac result demonstrates that the optimal resonance frequency (fres that maximizes the χac value is 500 Hz. As the frequency increases to 1000 Hz, the susceptibility decreases rapidly. However, when the frequency increases over 1000 Hz, the susceptibility sharply declines, and almost closes to zero. The experimental results reveal that the mean optimal susceptibility is 1.87 at an AlOx barrier layer thickness of 30 Å because the Co(0002 texture induces magneto-anisotropy, which improves the indirect CoFeB and Co spin exchange-coupling strength and the χac value. The results concerning magnetism indicate that the magnetic characteristics are related to the crystallinity of Co.

  19. Change of Electronic Structure and Magnetic Properties with MgO and Fe Thicknesses in Fe/MgO/Fe Magnetic Tunnel Junction

    Institute of Scientific and Technical Information of China (English)

    YANG Fan; BI Xiao-fang

    2006-01-01

    The effects of the thickness of MgO and Fe on the electronic structure and magnetic properties of Fe/MgO/Fe magnetic tunnel junction was studied using the first principle method. Two series of models with MgO of different thicknesses: Fe(3)MgO(t)Fe(3) (t=1,3,5,7) and with Fe of varied thicknesses: Fe(t)MgO(3)Fe(t) (t=3,4,5,6,7) were established. Calculated results show that in all the models the magnetic moment of Fe increases at the Fe/MgO interface and surface as compared with that of the inner layers. The magnetic moment of each Fe layer was found to be independent of MgO thicknesses, while the spin-polarization of Fe layer at the interface shows a slight change in function of the MgO thicknesses. The tunneling magnetoresistance (TMR) ratio estimated by the Julliere model has the same change tendency as the spin-polarization has, and the largest value is obtained at the MgO thickness of 5 atomic layers. When the Fe thickness increases, the spin-polarization of interface Fe layer follows up an increase with a decrease. The highest TMR value is achieved when the Fe thickness is of 4 atomic layers.

  20. Giant voltage controlled magnetic anisotropy in heavy metal/ferromagnet/insulator junctions (Conference Presentation)

    Science.gov (United States)

    Kioussis, Nicholas

    2016-10-01

    The realization of the MeRAM is based on the voltage control of the interfacial magnetocrystalline anisotropy (MCA) of heavy-metal/ferromagnet/insulator (HM/FM/I) nanojunctions, where the non-magnetic HM contact electrode (Ta, Pd, Pt, Au) has strong spin-orbit coupling (SOC). Employing ab initio electronic structure calculations we have investigated the effect of electric-field (E-field) and epitaxial strain on the MCA of Ta/FeCo/MgO heterostructure. We predict that uniaxial strain leads to a wide range of interesting voltage behavior of the MCA ranging from linear behavior with positive or negative magnetoelectronic coefficient, to non-monotonic ⋁-shape or inverse-⋀-shape E-field dependence with asymmetric magnetoelectronic coefficients. The calculations reveal that under a 4% compressive strain on MgO reaches the giant value of 1126 fJ/(V.m). The underlying mechanism is the synergistic effects of strain and E-field on the orbital characters, the energy level shifts of the SOC d-states, and the dielectric constant of MgO. These results demonstrate for the first time the feasibility of highly sensitive E-field-controlled MCA through strain engineering, which in turn open a viable pathway towards tailoring magnetoelectric properties for spintronic applications. * nick.kioussis@csun.edu This research was supported by NSF Grant No. ERC-TANMS-1160504

  1. Electronic coolers based on superconducting tunnel junctions: fundamentals and applications

    OpenAIRE

    2014-01-01

    International audience; Thermo-electric transport at the nano-scale is a rapidly developing topic, in particular in superconductor-based hybrid devices. In this review paper, we first discuss the fundamental principles of electronic cooling in mesoscopic superconducting hybrid structures, the related limitations and applications. We review recent work performed in Grenoble on the effects of Andreev reflection, photonic heat transport, phonon cooling, as well as on an innovative fabrication te...

  2. Important issues facing model-based approaches to tunneling transport in molecular junctions

    CERN Document Server

    Baldea, Ioan

    2015-01-01

    Extensive studies on thin films indicated a generic cubic current-voltage $I-V$ dependence as a salient feature of charge transport by tunneling. A quick glance at $I-V$ data for molecular junctions suggests a qualitatively similar behavior. This would render model-based studies almost irrelevant, since, whatever the model, its parameters can always be adjusted to fit symmetric (asymmetric) $I-V$ curves characterized by two (three) expansion coefficients. Here, we systematically examine popular models based on tunneling barrier or tight-binding pictures and demonstrate that, for a quantitative description at biases of interest ($V$ slightly higher than the transition voltage $V_t$), cubic expansions do not suffice. A detailed collection of analytical formulae as well as their conditions of applicability are presented to facilitate experimentalists colleagues to process and interpret their experimental data by obtained by measuring currents in molecular junctions. We discuss in detail the limits of applicabili...

  3. Photothermoelectric p-n junction photodetector with intrinsic broadband polarimetry based on macroscopic carbon nanotube films.

    Science.gov (United States)

    He, Xiaowei; Wang, Xuan; Nanot, Sébastien; Cong, Kankan; Jiang, Qijia; Kane, Alexander A; Goldsmith, John E M; Hauge, Robert H; Léonard, François; Kono, Junichiro

    2013-08-27

    Light polarization is used in the animal kingdom for communication, navigation, and enhanced scene interpretation and also plays an important role in astronomy, remote sensing, and military applications. To date, there have been few photodetector materials demonstrated to have direct polarization sensitivity, as is usually the case in nature. Here, we report the realization of a carbon-based broadband photodetector, where the polarimetry is intrinsic to the active photodetector material. The detector is based on p-n junctions formed between two macroscopic films of single-wall carbon nanotubes. A responsivity up to ~1 V/W was observed in these devices, with a broadband spectral response spanning the visible to the mid-infrared. This responsivity is about 35 times larger than previous devices without p-n junctions. A combination of experiment and theory is used to demonstrate the photothermoelectric origin of the responsivity and to discuss the performance attributes of such devices.

  4. Effect of sound on gap-junction-based intercellular signaling: Calcium waves under acoustic irradiation.

    Science.gov (United States)

    Deymier, P A; Swinteck, N; Runge, K; Deymier-Black, A; Hoying, J B

    2015-01-01

    We present a previously unrecognized effect of sound waves on gap-junction-based intercellular signaling such as in biological tissues composed of endothelial cells. We suggest that sound irradiation may, through temporal and spatial modulation of cell-to-cell conductance, create intercellular calcium waves with unidirectional signal propagation associated with nonconventional topologies. Nonreciprocity in calcium wave propagation induced by sound wave irradiation is demonstrated in the case of a linear and a nonlinear reaction-diffusion model. This demonstration should be applicable to other types of gap-junction-based intercellular signals, and it is thought that it should be of help in interpreting a broad range of biological phenomena associated with the beneficial therapeutic effects of sound irradiation and possibly the harmful effects of sound waves on health.

  5. Negative differential thermal conductance and thermal rectification effects across a graphene-based superconducting junction

    Science.gov (United States)

    Zhou, Xingfei; Zhang, Zhi

    2016-05-01

    We study the heat transport in a graphene-based normal-superconducting junction by solving the Bogoliubov-de Gennes (BdG) equation. There are two effects, the competitive and cooperative effects, which come from the interaction between the temperature-dependent energy-gap function in the superconducting region and the occupation difference of quasiparticles. It is found that the competitive effect can not only bring the negative differential thermal conductance effect but also the thermal rectification effect. By contrast, the cooperative effect just causes the thermal rectification effect. Furthermore, the thermal rectification ratio and the magnitude of heat current should be seen as two inseparable signs for characterizing the thermal rectification effect. These discoveries can add more application for the graphene-based superconducting junction, such as heat diode and heat transistor, at cryogenic temperatures.

  6. Non-Equilibrium Green's Function Calculation for Electron Transport through Magnetic Tunnel Junction

    Directory of Open Access Journals (Sweden)

    Sara Nobakht

    2014-06-01

    Full Text Available In this paper non-equilibrium Green's function method –dependent electron transport through non magnetic layer (insulator has been studied in one dimension .electron transport in multi-layer (magnetic/non magnetic/ magneticlayers is studied as quantum .the result show increasing the binding strength of the electrical insulator transition probability density case , the electron density , broad levels of disruption increases. Broad band connection increases the levels of disruption to electrical insulation and show non- conductive insulating state to semiconductor stat and even conductor

  7. Novel Nanoelectronic Device Applications Based on the Nonlinearity of Three-Terminal Ballistic Junctions

    Science.gov (United States)

    Sun, Jie; Wallin, D.; Brusheim, P.; Maximov, I.; Wang, Z. G.; Xu, H. Q.

    2007-04-01

    Nanometer-scale electron devices containing three-terminal ballistic junctions are fabricated by electron-beam lithography on InP/InGaAs two-dimensional electron gas materials. Based on the intrinsic nonlinearity of the devices, frequency mixer, phase detector and RS flip-flop memory functioning at room temperature are successfully achieved. The devices have simple structure layout and small size, and are expected to function at high speed.

  8. Light-modulated 0-π transition in a silicene-based Josephson junction

    Science.gov (United States)

    Zhou, Xingfei; Jin, Guojun

    2016-10-01

    We investigate the Andreev bound states (ABSs) and Josephson current in a silicene-based superconductor-normal-superconductor junction modulated by a perpendicular electric field and an off-resonant circularly polarized light. Based on the Dirac-Bogoliubov-de Gennes equation, we analytically derive the ABS levels and show they have different phase-difference dependences, which will remarkably influence the velocity of Cooper pairs and then the Josephson current. In the pristine or gated silicene, the ABS levels always show negative slope, which means that the Josephson current is irreversible because of the time-reversal symmetry. When an off-resonant circularly polarized light is applied, whether or not there is a perpendicular electric field, the ABS levels will have positive slope, leading to the emergence of reversed Josephson current due to the nonzero center-of-mass wave vector of Cooper pairs. In this light-modulated silicene-based Josephson junction, valley polarization provides an alternative mechanism for 0-π transition, very different from that for the conventional ferromagnetic Josephson junctions where the spin polarization is essential.

  9. Josephson current in Fe-based superconducting junctions: Theory and experiment

    Science.gov (United States)

    Burmistrova, A. V.; Devyatov, I. A.; Golubov, Alexander A.; Yada, Keiji; Tanaka, Yukio; Tortello, M.; Gonnelli, R. S.; Stepanov, V. A.; Ding, Xiaxin; Wen, Hai-Hu; Greene, L. H.

    2015-06-01

    We present a theory of the dc Josephson effect in contacts between Fe-based and spin-singlet s -wave superconductors. The method is based on the calculation of temperature Green's function in the junction within the tight-binding model. We calculate the phase dependencies of the Josephson current for different orientations of the junction relative to the crystallographic axes of Fe-based superconductor. Further, we consider the dependence of the Josephson current on the thickness of an insulating layer and on temperature. Experimental data for PbIn/Ba 1 -xKx (FeAs) 2 point-contact Josephson junctions are consistent with theoretical predictions for s± symmetry of an order parameter in this material. The proposed method can be further applied to calculations of the dc Josephson current in contacts with other new unconventional multiorbital superconductors, such as Sr2RuO4 and the superconducting topological insulator CuxBi2Se3 .

  10. arXiv Effective horizons, junction conditions and large-scale magnetism

    CERN Document Server

    Giovannini, Massimo

    2017-08-05

    The quantum mechanical generation of hypermagnetic and hyperlectric fields in four-dimensional conformally flat background geometries rests on the simultaneous continuity of the effective horizon and of the extrinsic curvature across the inflationary boundary. The junction conditions for the gauge fields are derived in general terms and corroborated by explicit examples with particular attention to the limit of a sudden (but nonetheless continuous) transition of the effective horizon. After reducing the dynamics to a pair of integral equations related by duality transformations, we compute the power spectra and deduce a novel class of logarithmic corrections which turn out to be, however, numerically insignificant and overwhelmed by the conductivity effects once the gauge modes reenter the effective horizon. In this perspective the magnetogenesis requirements and the role of the postinflationary conductivity are clarified and reappraised. As long as the total duration of the inflationary phase is nearly minim...

  11. Probing the nature and resistance of the molecule-electrode contact in SAM-based junctions

    Science.gov (United States)

    Suchand Sangeeth, C. S.; Wan, Albert; Nijhuis, Christian A.

    2015-07-01

    It is challenging to quantify the contact resistance and to determine the nature of the molecule-electrode contacts in molecular two-terminal junctions. Here we show that potentiodynamic and temperature dependent impedance measurements give insights into the nature of the SAM-electrode interface and other bottlenecks of charge transport (the capacitance of the SAM (CSAM) and the resistance of the SAM (RSAM)), unlike DC methods, independently of each other. We found that the resistance of the top-electrode-SAM contact for junctions with the form of AgTS-SCn//GaOx/EGaIn with n = 10, 12, 14, 16 or 18 is bias and temperature independent and hence Ohmic (non-rectifying) in nature, and is orders of magnitude smaller than RSAM. The CSAM and RSAM are independent of the temperature, indicating that the mechanism of charge transport in these SAM-based junctions is coherent tunneling and the charge carrier trapping at the interfaces is negligible.It is challenging to quantify the contact resistance and to determine the nature of the molecule-electrode contacts in molecular two-terminal junctions. Here we show that potentiodynamic and temperature dependent impedance measurements give insights into the nature of the SAM-electrode interface and other bottlenecks of charge transport (the capacitance of the SAM (CSAM) and the resistance of the SAM (RSAM)), unlike DC methods, independently of each other. We found that the resistance of the top-electrode-SAM contact for junctions with the form of AgTS-SCn//GaOx/EGaIn with n = 10, 12, 14, 16 or 18 is bias and temperature independent and hence Ohmic (non-rectifying) in nature, and is orders of magnitude smaller than RSAM. The CSAM and RSAM are independent of the temperature, indicating that the mechanism of charge transport in these SAM-based junctions is coherent tunneling and the charge carrier trapping at the interfaces is negligible. Electronic supplementary information (ESI) available: Detailed experimental procedure, Nyquist

  12. Effects of magnetic field orientation and injected current density on the output of nano-structured Co/Cu/Fe junctions

    Institute of Scientific and Technical Information of China (English)

    2001-01-01

    Co/Cu/Fe nano-sized sandwich thin films have been prepared by electron beam evaporation. 5 μm×5 μm Co/Cu/Fe sandwich heterojunction was made using photolithography and lift-off process. The bipolar output signal of Co/Cu/Fe junctions has been measured and analyzed. The effects of applied magnetic field angle (referring to the normal of the junction plane) and injecting spin-polarized current on the output signals have been studied, and the measured results were discussed.

  13. Zero-Bias-Field Spin Torque Induced Oscillation of a Vortex Core in a Magnetic Junction Nano-Pillar with High Magnetoresistance Ratio

    Science.gov (United States)

    Tsukahara, Hiroshi; Imamura, Hiroshi

    2017-06-01

    Spin torque induced dynamics of a vortex core in a magnetic junction nano-pillar is studied by paying special attention to the effect of the in-plane current due to the spatial variation of magnetization. We calculated the motion of the vortex core and the current distribution simultaneously. The current has a considerable in-plane component within the magnetic junction nano-pillar with a high magnetoresistance ratio, and the stable rotational motion of the vortex core is caused by a spin transfer torque from the in-plane current without a bias field when the magnetoresistance ratio is over 180%. It is shown that the zero-bias-field oscillation of the vortex core can be maintained if the magnetoresistance ratio and strength of the in-plane current exceed a certain critical value.

  14. Analysis of junction temperatures in high-power GaN-based LEDs

    Institute of Scientific and Technical Information of China (English)

    2010-01-01

    We presented the analysis of the incomplete conduction in bonding medium in high power GaN-based light-emitting diode (LED) packages. A numerical study was carried out with parametric model to understand the junction temperature variation due to bonding medium defects. Transient thermal measurement was performed to evaluate LED’s junction temperature. Thermal resistance from chip to lead frame was 20 K/W in our sample LED. It was suggested that only 60% of the surface area of the bonding medium was involved in the thermal conduction. This result was also supported by the SEM image. Blocking of thermal path induced by ineffective area of the bonding medium was regarded as a factor of its thermal resistance. Thus, the effective area of the bonding medium should be included in the FEM model and considered as another important factor in high power LED’s thermal management.

  15. Fabrication of nano-sized magnetic tunnel junctions using lift-off process assisted by atomic force probe tip.

    Science.gov (United States)

    Jung, Ku Youl; Min, Byoung-Chul; Ahn, Chiyui; Choi, Gyung-Min; Shin, Il-Jae; Park, Seung-Young; Rhie, Kungwon; Shin, Kyung-Ho

    2013-09-01

    We present a fabrication method for nano-scale magnetic tunnel junctions (MTJs), employing e-beam lithography and lift-off process assisted by the probe tip of atomic force microscope (AFM). It is challenging to fabricate nano-sized MTJs on small substrates because it is difficult to use chemical mechanical planarization (CMP) process. The AFM-assisted lift-off process enables us to fabricate nano-sized MTJs on small substrates (12.5 mm x 12.5 mm) without CMP process. The e-beam patterning has been done using bi-layer resist, the poly methyl methacrylate (PMMA)/ hydrogen silsesquioxane (HSQ). The PMMA/HSQ resist patterns are used for both the etch mask for ion milling and the self-aligned mask for top contact formation after passivation. The self-aligned mask buried inside a passivation oxide layer, is readily lifted-off by the force exerted by the probe tip. The nano-MTJs (160 nm x 90 nm) fabricated by this method show clear current-induced magnetization switching with a reasonable TMR and critical switching current density.

  16. Investigation on etch characteristics of nanometer-sized magnetic tunnel junction stacks using a HBr/Ar plasma.

    Science.gov (United States)

    Kim, Eun Ho; Xiao, Yu Bin; Kong, Seon Mi; Chung, Chee Won

    2011-07-01

    The etch characteristics of CoFeB magnetic films and magnetic-tunnel-junction (MTJ) stacks masked with Ti films were investigated using an inductively coupled plasma reactive ion etching in a HBr/Ar gas mix. The etch rate, etch selectivity, and etch profile of the CoFeB films were obtained as a function of the HBr concentration. As the HBr gas was added to Ar, the etch rate of the CoFeB films, and the etch selectivity to the Ti hard mask, gradually decreased, but the etch profile of the CoFeB films was improved. The effects of the HBr concentration and etch parameters on the etch profile of the MTJ stacks with a nanometer-sized 70 x 100 nm2 pattern were explored. At 10% HBr concentration, low ICP RF power, and low DC-bias voltage, better etch profiles of the MTJ stacks were obtained without redeposition. It was confirmed that the protective layer containing hydrogen, and the surface bombardment of the Ar ions, played a key role in obtaining a steep sidewall angle in the etch profile. Fine-pattern transfer of the MTJ stacks with a high degree of anisotropy was achieved using a HBr/Ar gas chemistry.

  17. A novel low-cost high-throughput probe card scanner analyzer for characterization of magnetic tunnel junctions

    Science.gov (United States)

    Pong, Philip W. T.; Schmoueli, Moshe; Marcus, Eliezer; Egelhoff, William F., Jr.

    2007-09-01

    The advancement of the technology of magnetic tunnel junctions (MTJs) greatly hinges on the optimization of the magnetic materials, fabrication process, and annealing conditions which involve characterization of a large number of samples. As such, it is of paramount importance to have a rapid-turnaround characterization method since the characterization process can take even longer time than the fabrication. Conventionally, micropositioners and probe tips are manually operated to perform 4-point electrical measurement on each individual device which is a time-consuming, low-throughput process. A commercial automatic probe card analyzer can provide high turnaround; however, it is expensive and involves much cost and labor to install and maintain the equipment. In view of this, we have developed a novel low-cost, home-made, high-throughput probe card analyzer system for characterization of MTJs. It can perform fast 4-probe electrical measurements including current vs voltage, magnetoresistance, and bias dependence measurements with a high turnaround of about 500 devices per hour. The design and construction of the system is discussed in detail in this paper.

  18. A CoFeB/MgO/CoFeB perpendicular magnetic tunnel junction coupled to an in-plane exchange-biased magnetic layer

    Energy Technology Data Exchange (ETDEWEB)

    Zhu, M., E-mail: mzhu@sunycnse.com; Chong, H.; Vu, Q. B.; Vo, T.; Brooks, R.; Stamper, H.; Bennett, S.; Piccirillo, J. [Colleges of Nanoscale Science and Engineering, SUNY Polytechnic Institute, Albany, New York 12203 (United States)

    2015-05-25

    We report a stack structure which utilizes an in-plane exchange-biased magnetic layer to influence the coercivity of the bottom CoFeB layer in a CoFeB/MgO/CoFeB perpendicular magnetic tunnel junction. By employing a thickness wedge deposition technique, we were able to study various aspects of this stack using vibrating sample magnetometer including: (1) the coupling between two CoFeB layers as a function of MgO thickness; and (2) the coupling between the bottom CoFeB and the in-plane magnetic layer as a function of Ta spacer thickness. Furthermore, modification of the bottom CoFeB coercivity allows one to measure tunneling magnetoresistance and resistance-area product (RA) of CoFeB/MgO/CoFeB in this pseudo-spin-valve format using current-in-plane-tunneling technique, without resorting to (Co/Pt){sub n} or (Co/Pd){sub n} multilayer pinning.

  19. Efficacy of Magnetic Resonance urography in detecting crossing renal vessels in children with ureteropelvic junction obstruction.

    Science.gov (United States)

    Pavicevic, Polina K; Saranovic, Djordjije Z; Mandic, Marija J; Vukadinovic, Vojkan M; Djordjevic, Miroslav Lj; Radojicic, Zoran I; Petronic, Ivana; Cirovic, Dragana; Nikolic, Dejan

    2015-01-01

    An aberrant or accessory crossing renal vessel (CV) leading to the lower pole of the kidney is the most common extrinsic cause of uretero pelvic obstruction(UPJ) obstruction in a child and young adolescent.There is still controversy regarding there functional significance in obstruction Preoperative identification of such vessels may influence surgical management. First aim is to determine the value of magnetic resonance (MR) urography in detecting crossing vessels in children with UPJ obstruction,comparing the data with postoperative findings and the second one is to evaluate morphologic and functional parameters in these hydronephrotic kidneys. Between June 2009 and December 2012 we retrospectively reviewed MR urography records of one hundred and nine children with unilateral hydronephrosis at the University Children's Hospital. 68 (62.4%) were male and 41 (37.6%) were female,median age was 6.5 ± 5.7. Of the total number of patients, 30 (27%) underwent pyeloplasty, while 79 (72.5%) did not. The age at surgery ranged from 0.3 to 18 years (median 6.6 years). The indication for surgery was based on standard criteria (obstructed renal transit time with or without altered renal function of vDRF MRU, there was no crossing vessel in 21 kidneys, confirmed at surgery in 18. A crossing vessel was detected with MRU in 9 kidneys and confirmed at surgery in 6. Thus, the sensitivity of MRU was 66.7%, the specificity was 85.7%, the positive predictive value was 66.7%, the negative predictive value was 85.7% and the accuracy was 80%. There was no statistically significant difference in the detection of crossing vessels between MR urography and surgery (p = 0.004 and p MRU and surgery showed good agreement (κ = 0.524). Based on our results we suggest that MR urography is a reliable and safe diagnostic tool to determine crossing vessels in selected children with UPJ obstruction. Thus, MRU can substitute for other imaging modalities and provide detailed information about the

  20. Fabrication of L1{sub 0}-MnAl perpendicularly magnetized thin films for perpendicular magnetic tunnel junctions

    Energy Technology Data Exchange (ETDEWEB)

    Hosoda, Masaki; Oogane, Mikihiko; Kubota, Miho; Saruyama, Haruaki; Iihama, Satoshi; Naganuma, Hiroshi; Ando, Yasuo [Department of Applied Physics, Graduate school of Engineering, Tohoku University, Aza-aoba 6-6-05, Aramaki, Aoba-ku, Sendai 980-8579 (Japan); Kubota, Takahide [WPI Advanced Institute for Materials Research, Tohoku University, Katahira 2-1-1, Aoba-ku, Sendai 980-8577 (Japan)

    2012-04-01

    Structural and magnetic properties of MnAl thin films with different composition, growth temperature, and post-annealing temperature were investigated. The optimum condition for fabrication of L1{sub 0}-MnAl perpendicularly magnetized thin film deposited on Cr-buffered MgO single crystal substrate was revealed. The results of x ray diffraction indicated that the MnAl films annealed at proper temperature had a (001)-orientation and L1{sub 0}-ordered structure. The L1{sub 0}-ordered films were perpendicularly magnetized and had a large perpendicular anisotropy. In addition, low surface roughness was achieved. For the optimized fabrication condition, the saturation magnetization M{sub s} of 600 emu/cm{sup 3} and perpendicular magnetic anisotropy K{sub u} of 1.0 x 10{sup 7} erg/cm{sup 3} was obtained using the Mn{sub 48}Al{sub 52} target at deposition temperature of 200 deg. C and post-annealing temperature of 450 deg. C.

  1. Radial junction solar cells based on heterojunction with intrinsic thin layer (HIT) structure

    Science.gov (United States)

    Shen, Haoting

    conformality of a-Si:H deposited by PECVD using SiH4 and H 2 on high aspect ratio trench structures. Experimentally, it was found that the a-Si:H growth rate increased with increasing SiH4 flow rate up to a point after which it saturated at a maximum growth rate. In addition, it was found that higher SiH4 flow rates resulted in improved thickness uniformity along the trenches. A model based on gas transport and surface reaction of SiH3 in trenches was developed and was used to explain the experimental results and predict conditions that would yield improved thickness uniformity. The knowledge gained in the PECVD deposition studies was then used to prepare HIT radial junction Si pillar array solar cell devices. Deep reactive ion etching (DRIE) was used to prepare Si pillar arrays on p-type (111) c-Si wafers. A process was developed to prepare n-type a-Si:H films from SiH 4 and H2, with PH3 as doping gas. Indium tin oxide (ITO) deposited by sputter deposition and Al-doped ZnO deposited by atomic layer deposition (ALD) were evaluated as transparent conductive top contacts to the n-type a-Si:H layer. By adjusting the SiH4/H2 gas flow ratio, intrinsic a-Si:H was grown on the c-Si surface without epitaxial micro-crystalline growth. Continuous and pulsed deposition modes were investigated for deposition of the intrinsic and n-type a-Si:H layers on the c-Si pillars. The measurements of device light performance shown that slightly lower short circuit current density (Jsc, 32 mA/cm2 to 35 mA/cm 2) but higher open circuit voltage (Voc, 0.56 V to .47 V) were obtained on the pulsed devices. As the result, higher efficiency (11.6%) was achieved on the pulsed devices (10.6% on the continuous device). The improved performance of the pulsed deposition devices was explained as arising from a higher SiH3 concentration in the initial plasma which lead to a more uniform layer thickness. Planar and radial junction Si wire array HIT solar cell devices were then fabricated and the device performance

  2. Perpendicular magnetic tunnel junction with enhanced anisotropy obtained by utilizing an Ir/Co interface

    Science.gov (United States)

    Yakushiji, Kay; Kubota, Hitoshi; Fukushima, Akio; Yuasa, Shinji

    2016-01-01

    A highly scalable perpendicularly magnetized storage layer of a spin-torque-switching magnetic random-access memory (STT-MRAM) was developed. This storage layer attains a perpendicular magnetic anisotropy (PMA) of above 0.9 erg/cm2 at a thickness of 2 nm. Such high PMA is suitable for pushing STT-MRAM technology beyond the 20 nm node. The key was to realize dual interfacial PMA at both the Ir/Co and FeB/MgO interfaces in the united structure of the storage layer. While a high PMA was retained, a high magnetoresistance ratio (100%) and a low resistance-area product (3.0 Ω µm2) were also achieved.

  3. Kondo peak splitting and Kondo dip in single molecular magnet junctions

    Energy Technology Data Exchange (ETDEWEB)

    Niu, Pengbin, E-mail: 120233951@qq.com [Institute of Solid State Physics, Shanxi Datong University, Datong 037009 (China); Shi, Yunlong; Sun, Zhu [Institute of Solid State Physics, Shanxi Datong University, Datong 037009 (China); Nie, Yi-Hang [Institute of Theoretical Physics, Shanxi University, Taiyuan 030006 (China); Luo, Hong-Gang [Center for Interdisciplinary Studies & Key Laboratory for Magnetism and Magnetic Materials of the MoE, Lanzhou University, Lanzhou 730000 (China); Beijing Computational Science Research Center, Beijing 100084 (China)

    2016-01-15

    Many factors containing bias, spin–orbit coupling, magnetic fields applied, and so on can strongly influence the Kondo effect, and one of the consequences is Kondo peak splitting (KPS). It is natural that KPS should also appear when another spin degree of freedom is involved. In this work we study the KPS effects of single molecular magnets (SMM) coupled with two metallic leads in low-temperature regime. It is found that the Kondo transport properties are strongly influenced by the exchange coupling and anisotropy of the magnetic core. By employing Green's function method in Hubbard operator representation, we give an analytical expression for local retarded Green's function of SMM and discussed its low-temperature transport properties. We find that the anisotropy term behaves as a magnetic field and the splitting behavior of exchange coupling is quite similar to the spin–orbit coupling. These splitting behaviors are explained by introducing inter-level or intra-level transitions, which account for the seven-peak splitting structure. Moreover, we find a Kondo dip at Fermi level under proper parameters. These Kondo peak splitting behaviors in SMM deepen our understanding to Kondo physics and should be observed in the future experiments. - Highlights: • We study Kondo peak splitting in single molecular magnets. • We study Kondo effect by Hubbard operator Green's function method. • We find Kondo peak splitting structures and a Kondo dip at Fermi level. • The exchange coupling and magnetic anisotropy induce fine splitting structure. • The splitting structures are explained by inter-level or intra-level transitions.

  4. Intrinsic spin dynamics in optically excited nanoscale magnetic tunnel junction arrays restored by dielectric coating

    Science.gov (United States)

    Jaris, M.; Yahagi, Y.; Mahato, B. K.; Dhuey, S.; Cabrini, S.; Nikitin, V.; Stout, J.; Hawkins, A. R.; Schmidt, H.

    2016-11-01

    We report the all-optical observation of intrinsic spin dynamics and extraction of magnetic material parameters from arrays of sub-100 nm spin-transfer torque magnetic random access memory (STT-MRAM) devices with a CoFeB/MgO interface. To this end, the interference of surface acoustic waves with time-resolved magneto-optic signals via magneto-elastic coupling was suppressed using a dielectric coating. The efficacy of this method is demonstrated experimentally and via modeling on a nickel nanomagnet array. The magnetization dynamics for both coated nickel and STT-MRAM arrays shows a restored field-dependent Kittel mode from which the effective damping can be extracted. We observe an increased low-field damping due to extrinsic contributions from magnetic inhomogeneities and variations in the nanomagnet shape, while the intrinsic Gilbert damping remains unaffected by patterning. The data are in excellent agreement with a local resonance model and have direct implications for the design of STT-MRAM devices as well as other nanoscale spintronic technologies.

  5. Spin dependent transport properties of Mn-Ga/MgO/Mn-Ga magnetic tunnel junctions with metal(Mg, Co, Cr) insertion layer

    Energy Technology Data Exchange (ETDEWEB)

    Liang, S. H.; Tao, L. L.; Liu, D. P., E-mail: dpliu@iphy.ac.cn; Han, X. F., E-mail: xfhan@iphy.ac.cn [State Key Laboratory of Magnetism, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Lu, Y. [Institut Jean Lamour, UMR 7198, CNRS-Nancy Université, BP 239, 54506 Vandoeuvre (France)

    2014-04-07

    We report a first principles theoretical investigation of spin polarized quantum transport in Mn{sub 2}Ga/MgO/Mn{sub 2}Ga and Mn{sub 3}Ga/MgO/Mn{sub 3}Ga magnetic tunneling junctions (MTJs) with the consideration of metal(Mg, Co, Cr) insertion layer effect. By changing the concentration of Mn, our calculation shows a considerable disparity in transport properties: A tunneling magnetoresistance (TMR) ratio of 852% was obtained for Mn{sub 2}Ga-based MTJs, however, only a 5% TMR ratio for Mn{sub 3}Ga-based MTJs. In addition, the influence of insertion layer has been considered in our calculation. We found the Co insertion layer can increase the TMR of Mn{sub 2}Ga-based MTJ to 904%; however, the Cr insertion layer can decrease the TMR by 668%; A negative TMR ratio can be obtained with Mg insertion layer. Our work gives a comprehensive understanding of the influence of different insertion layer in Mn-Ga based MTJs. It is proved that, due to the transmission can be modulated by the interfacial electronic structure of insertion, the magnetoresistance ratio of Mn{sub 2}Ga/MgO/Mn{sub 2}Ga MTJ can be improved by inserting Co layer.

  6. Structural optimization and shear performances of the nanopins based on Y-junction carbon nanotubes

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Zhong-Qiang, E-mail: zhangzq@mail.ujs.edu.cn [Micro/Nano Science and Technology Center, Jiangsu University, Zhenjiang 212013 (China); Jiangsu Collaborative Innovation Center of Photovoltaic Science and Engineering, Changzhou University, Changzhou 213164, Jiangsu (China); State Key Laboratory of Structural Analysis for Industrial Equipment, Department of Engineering Mechanics, Faculty of Vehicle Engineering and Mechanics, Dalian University of Technology, Dalian 116024 (China); Zhong, Jun [Micro/Nano Science and Technology Center, Jiangsu University, Zhenjiang 212013 (China); Ye, Hong-Fei [State Key Laboratory of Structural Analysis for Industrial Equipment, Department of Engineering Mechanics, Faculty of Vehicle Engineering and Mechanics, Dalian University of Technology, Dalian 116024 (China); Cheng, Guang-Gui [Micro/Nano Science and Technology Center, Jiangsu University, Zhenjiang 212013 (China); Ding, Jian-Ning, E-mail: dingjn@ujs.edu.cn [Micro/Nano Science and Technology Center, Jiangsu University, Zhenjiang 212013 (China); Jiangsu Collaborative Innovation Center of Photovoltaic Science and Engineering, Changzhou University, Changzhou 213164, Jiangsu (China)

    2017-01-01

    Utilizing the classical molecular dynamic, we have briefly conducted geometry optimization on several typical nanopins based on Y-junction carbon nanotubes (CNTs), and further investigated their shear performance. The service performance of the nanopin is not sensitive to the length of the inserting end, while as the height of the branch tube increases, the maximum unloading force increases firstly and then keeps relatively stable. The overlong inserting end and high branch tube can lead to the severe oscillation in unloading force due to the continuous morphology change. Moreover, results show that a small angle included in Y-junction CNTs can contribute to both of the fixity of the nanopin and instability of the uninstallation process. Further investigation indicates that the orientation of the branch tubes of the nanopin determines the maximum shear performance, while the radial stability of the CNTs plays an important role in the shear performance of the nanopin. And the microstructure of the Y-junction CNT occurred during the using process can also influence its service performance.

  7. Structural optimization and shear performances of the nanopins based on Y-junction carbon nanotubes

    Science.gov (United States)

    Zhang, Zhong-Qiang; Zhong, Jun; Ye, Hong-Fei; Cheng, Guang-Gui; Ding, Jian-Ning

    2017-01-01

    Utilizing the classical molecular dynamic, we have briefly conducted geometry optimization on several typical nanopins based on Y-junction carbon nanotubes (CNTs), and further investigated their shear performance. The service performance of the nanopin is not sensitive to the length of the inserting end, while as the height of the branch tube increases, the maximum unloading force increases firstly and then keeps relatively stable. The overlong inserting end and high branch tube can lead to the severe oscillation in unloading force due to the continuous morphology change. Moreover, results show that a small angle included in Y-junction CNTs can contribute to both of the fixity of the nanopin and instability of the uninstallation process. Further investigation indicates that the orientation of the branch tubes of the nanopin determines the maximum shear performance, while the radial stability of the CNTs plays an important role in the shear performance of the nanopin. And the microstructure of the Y-junction CNT occurred during the using process can also influence its service performance.

  8. Bipolar spin-valley diode effect in a silicene magnetic junction

    Science.gov (United States)

    Zhai, Xuechao; Zhang, Sihao; Zhao, Ying; Zhang, Xiaoyu; Yang, Zhihong

    2016-09-01

    Silicene has attracted much attention recently due to the electrons' multiple degrees of freedom, specifically for spin and valley. We here demonstrate that a bipolar spin-valley diode effect can be driven and controlled by applying longitudinal biases through a silicene ferromagnetic-field/interlayer-electric-field junction. This effect indicates that only one-spin (the other spin) electrons from one valley (the other valley) contribute to the conductance under positive (negative) biases, originating from the specific band-matching tunneling mechanism. All the forbidden channels are induced by either spin-mismatch or spin-valley dependent bandgaps. It is also found that, by reversing the direction of interlayer electric field, the conductive valley can be switched to the other while the spin orientation is reserved. Furthermore, all the possible spin-valley configurations of conductance, contributed by single spin and single valley, can be completely turned "on" or "off" only by tuning the bias and the electric field. These results suggest that silicene can be a good candidate for future quantum information processing in spin-valley logic circuits.

  9. Electron optics with p-n junctions in ballistic graphene

    Science.gov (United States)

    Chen, Shaowen; Han, Zheng; Elahi, Mirza M.; Habib, K. M. Masum; Wang, Lei; Wen, Bo; Gao, Yuanda; Taniguchi, Takashi; Watanabe, Kenji; Hone, James; Ghosh, Avik W.; Dean, Cory R.

    2016-09-01

    Electrons transmitted across a ballistic semiconductor junction are expected to undergo refraction, analogous to light rays across an optical boundary. In graphene, the linear dispersion and zero-gap band structure admit highly transparent p-n junctions by simple electrostatic gating. Here, we employ transverse magnetic focusing to probe the propagation of carriers across an electrostatically defined graphene junction. We find agreement with the predicted Snell’s law for electrons, including the observation of both positive and negative refraction. Resonant transmission across the p-n junction provides a direct measurement of the angle-dependent transmission coefficient. Comparing experimental data with simulations reveals the crucial role played by the effective junction width, providing guidance for future device design. Our results pave the way for realizing electron optics based on graphene p-n junctions.

  10. Implantation-Free 4H-SiC Bipolar Junction Transistors with Double Base Epi-layers

    Science.gov (United States)

    2007-05-14

    gain 4H-SiC NPN power bipolar junction transistor ,” IEEE Electron Device Letters, vol. 24, pp. 327-329, May 2003. [3] C.-F. Huang and J. A. Cooper...Jr., “High current gain 4H-SiC NPN Bipolar Junction Transistors ,” IEEE Electron Device Letters, vol. 24, pp. 396-398, Jun. 2003. [4] Sumi...Implantation-Free 4H-SiC Bipolar Junction Transistors with Double Base Epi-layers Jianhui Zhang, member, IEEE, Xueqing, Li, Petre Alexandrov

  11. Magnetic device prop erties for a hetero junction based on functionalized armchair-edged graphene nanoribb ons%功能化扶手椅型石墨烯纳米带异质结的磁器件特性∗

    Institute of Scientific and Technical Information of China (English)

    朱朕; 李春先; 张振华

    2016-01-01

    Graphene is predicted to hold a promising use for developing future miniaturized electronic devices. However, the magnetic transport properties based on the armchair-edged graphene nanoribbons (AGNRs) is less studied in currently existing work. So in this work the special chemical modified nanoribbons based on the edge of the AGNR bridged by the transition metal Mn atom and passivated subsequently by two F atoms or two H atoms (AGNR-Mn-F2 or AGNR-Mn-H2) are proposed theoretically. Our calculations from first-principle method based on the spin-polarized density functional theory combined with the non-equilibrium Green’s function technique show that the heterojunction F2-AGNR-Mn-H2 consisting of such two types of nanoribbons possesses the excellent magnetic device features, namely, the spin polarization is able to reach almost 100% in a very large bias region, and under P magnetic configuration (the external magnetic fields applied perpendicularly to two electrodes are set to point to the same direction), the single spin filtering effects can be realized, while under the AP configuration (the external magnetic fields applied perpendicularly to two electrodes are set to point to the opposite directions), the dual spin filtering effects can be realized. It is also found that such a heterojunction features dual diode-like effect, and its rectification ratio is up to be 108. Additionally, changing the direction of switching magnetic field, namely, changing the magnetic configurations from one kind of case to another, would lead to an obvious spin valve effect, and the giant magnetoresistace approaches to 108%. These findings suggest that the excellent spin polarization, dual diode-like effect, and giant magnetoresistace effect can be realized simultaneously for this heterojunction, therefore, it holds good promise in developing spintronic devices.

  12. Pediatric ureteropelvic junction obstruction: can magnetic resonance urography identify crossing vessels?

    Energy Technology Data Exchange (ETDEWEB)

    Parikh, Kushal R.; Kraft, Kate H.; Ivancic, Vesna; Smith, Ethan A.; Dillman, Jonathan R. [Section of Pediatric Radiology, Mott Children' s Hospital, Department of Radiology, University of Michigan Health System, Ann Arbor, MI (United States); Hammer, Matthew R. [University of Texas Southwestern, Department of Radiology, Dallas, TX (United States)

    2015-11-15

    MR Urography (MRU) is an increasingly used imaging modality for the evaluation of pediatric genitourinary obstruction. To determine whether pediatric MR urography (MRU) reliably detects crossing vessels in the setting of suspected ureteropelvic junction (UPJ) obstruction. The clinical significance of these vessels was also evaluated. We identified pediatric patients diagnosed with UPJ obstruction by MRU between May 2009 and June 2014. MRU studies were evaluated by two pediatric radiologists for the presence or absence of crossing vessels. Ancillary imaging findings such as laterality, parenchymal thinning/scarring, trapped fluid in the proximal ureter, and presence of renal parenchymal edema were also evaluated. Imaging findings were compared to surgical findings. We used the Mann-Whitney U test to compare continuous data and the Fisher exact test to compare proportions. Twenty-four of 25 (96%) UPJ obstructions identified by MRU were surgically confirmed. MRU identified crossing vessels in 10 of these cases, with 9 cases confirmed intraoperatively (κ = 0.92 [95% CI: 0.75, 1.0]). Crossing vessels were determined to be the primary cause of UPJ obstruction in 7/9 children intraoperatively, while in two children the vessels were deemed incidental and noncontributory to the urinary tract obstruction. There was no significant difference in age or the proportions of ancillary findings when comparing children without and with obstructing vessels. MRU allows detection of crossing vessels in pediatric UPJ obstruction. Although these vessels are the primary cause of obstruction in some children, they are incidental and non-contributory in others. Our study failed to convincingly identify any significant predictors (e.g., age or presence of renal parenchymal edema) that indicate when a crossing vessel is the primary cause of obstruction. (orig.)

  13. Pediatric ureteropelvic junction obstruction: can magnetic resonance urography identify crossing vessels?

    Science.gov (United States)

    Parikh, Kushal R; Hammer, Matthew R; Kraft, Kate H; Ivančić, Vesna; Smith, Ethan A; Dillman, Jonathan R

    2015-11-01

    MR Urography (MRU) is an increasingly used imaging modality for the evaluation of pediatric genitourinary obstruction. To determine whether pediatric MR urography (MRU) reliably detects crossing vessels in the setting of suspected ureteropelvic junction (UPJ) obstruction. The clinical significance of these vessels was also evaluated. We identified pediatric patients diagnosed with UPJ obstruction by MRU between May 2009 and June 2014. MRU studies were evaluated by two pediatric radiologists for the presence or absence of crossing vessels. Ancillary imaging findings such as laterality, parenchymal thinning/scarring, trapped fluid in the proximal ureter, and presence of renal parenchymal edema were also evaluated. Imaging findings were compared to surgical findings. We used the Mann-Whitney U test to compare continuous data and the Fisher exact test to compare proportions. Twenty-four of 25 (96%) UPJ obstructions identified by MRU were surgically confirmed. MRU identified crossing vessels in 10 of these cases, with 9 cases confirmed intraoperatively (κ = 0.92 [95% CI: 0.75, 1.0]). Crossing vessels were determined to be the primary cause of UPJ obstruction in 7/9 children intraoperatively, while in two children the vessels were deemed incidental and noncontributory to the urinary tract obstruction. There was no significant difference in age or the proportions of ancillary findings when comparing children without and with obstructing vessels. MRU allows detection of crossing vessels in pediatric UPJ obstruction. Although these vessels are the primary cause of obstruction in some children, they are incidental and non-contributory in others. Our study failed to convincingly identify any significant predictors (e.g., age or presence of renal parenchymal edema) that indicate when a crossing vessel is the primary cause of obstruction.

  14. First-principles study of spin transport in BN doped CrO{sub 2}–graphene–CrO{sub 2} magnetic tunnel junction

    Energy Technology Data Exchange (ETDEWEB)

    Choudhary, Sudhanshu, E-mail: sudhanshu@nitkkr.ac.in; Mishra, Pradeep, E-mail: pradeepmshr26@gmail.com; Goyal, Rohit, E-mail: rohit91.goyal@gmail.com

    2016-03-06

    We investigate the spin-dependent electronic transport properties of Magnetic tunnel junction (MTJ) consisting of Boron (B) and Nitrogen (N) doped graphene nanosheet sandwiched between two CrO{sub 2} half-metallic–ferromagnet (HMF) electrodes. A large value of tunnel magnetoresistance (TMR) and perfect spin filtration was obtained as compared to un-doped graphene MTJ structures reported in past. The use of HMF electrodes further raises the TMR and improves the spin filtration in comparison to MTJs with metallic and ferromagnetic (FM) electrodes, which suggest HMF electrodes as a suitable candidate over metallic and FM electrodes for implementing graphene sheet based MTJs. A high value of TMR ∼100% is obtained at zero bias voltage, which remains constantly high at higher bias voltages in the range of 0 V to 1 V. The higher value of TMR and better (near perfect) spin filtration abilities suggest its usefulness in spin-valves and other spintronics based applications. The spin-dependent non-equilibrium transport is also investigated by analyzing the bias dependent transmission coefficients. - Highlights: • Higher TMR was observed in BN doped graphene based MTJ in comparison with undoped structure. • Perfect Spin Filtration Effect was observed in doped structure in comparison with undoped structure. • Use of HMF electrodes further raises TMR and Spin Filtration Effect.

  15. Preparation and characterization of a ferrimagnetic amorphous alloy of GdCo entering the design of magnetic tunnel junctions: ionizing radiations hardness of magnetic tunnel junctions; preparation et caracterisation d'un alliage amorphe ferrimagnetique de GdCo entrant dans la conception de jonctions tunnel magnetiques. Resistance des jonctions tunnel magnetiques aux rayonnements ionisants

    Energy Technology Data Exchange (ETDEWEB)

    Conraux, Y

    2005-10-15

    The magnetic random access memories (MRAM) are on the way to supplant the other forms of random access memories using the states of electric charge, and this thanks to their many technical advantages: not-volatility, speed, low consumption power, robustness. Also, the MRAM are alleged insensitive with the ionizing radiations, which was not checked in experiments until now. The current architecture of the MRAM is based on the use of magnetic tunnel junctions (MTJ). These MRAM can present an important disadvantage, because they are likely of present errors of addressing, in particular when integration (density of memory cells) is increasingly thorough. The work undertaken during this thesis relates to these two points: - to check the functional reliability of the MRAM containing JTM exposed to high energy ionizing radiations; - to study a ferrimagnetic amorphous alloy, GdCo, likely to enter the composition of JTM and allowing to free from the possible errors of addressing by a process of thermal inhibition of the memory cells. This work of thesis showed that the MRAM containing JTM preserve their functional properties fully when they are subjected to intense ionizing radiations, and that GdCo is a very interesting material from the point of view of the solid state physics and magnetism, that its physical properties are very promising as for its applications, and that its integration in a JTM still claims technological developments. (author)

  16. Organic- and molecule-based magnets

    Indian Academy of Sciences (India)

    Joel S Miller

    2006-07-01

    The discovery of organic- and molecule-based magnets has led to design and synthesis of several families with magnetic ordering temperatures as high as ∼ 125° C. Examples of soft and hard magnets with coercivities as high as 27 kOe have also been reported. Examples from our laboratory of organic-based magnets using the tetracya- noethylene radical anion, [TCNE]$^{\\bullet -}$, are discussed. In addition, several molecule-based magnets based on Prussian Blue structured materials as well as dicyanamide are discussed.

  17. MoRe-based and MgB{sub 2} -based tunnel junctions and their characteristics

    Energy Technology Data Exchange (ETDEWEB)

    Shaternik, V; Noskov, V; Chubatyy, V [Kurdyumov Institute for Metal Physics of National Academy of Sciences of Ukraine, Vernadskii boulevard 36, 02142 Kiev (Ukraine); Larkin, S [Concern ' Nauka' , Dovnar-Zapol' skii street 2/20, 03116 Kiev (Ukraine); Belogolovskii, M, E-mail: shaternik@mail.r [Donetsk Institute for Physics and Engineering, National Academy of Sciences of Ukraine, 83114 Donetsk (Ukraine)

    2010-06-01

    Perspective Josephson Mo-Re alloy-oxide-Pb, MgB{sub 2}- oxide - Mo-Re alloy and Mo-Re alloy-normal metal-oxide- normal metal-Mo-Re alloy junctions have been fabricated and investigated. Thin ({approx}50-100 nm) MoRe superconducting films are deposited on Al{sub 2}O{sub 3} substrates by using a dc magnetron sputtering of MoRe target. Thin ({approx}50-100 nm) MgB{sub 2} superconducting films are deposited on Al{sub 2}O{sub 3} substrates by using e-beam evaporation of boron and thermal coevaporation of magnesium. To investigate a transparency spread for the fabricated junctions barriers the computer simulation of the measured quasiparticle I-V curves have been done in framework of the model of multiple Andreev reflections in double-barrier junction interfaces. It's demonstrated the investigated junctions can be described as highly asymmetric double-barrier Josephson junctions with great difference between the two barrier transparencies. Results of computer simulation of quasiparticles I-V curves of junctions are presented and discussed. The I{sub C}(T) characteristics, measured for Josephson heterostructures with different thickness of metal layer s and exposure dose E, essentially deviate from an Ambegaokar- Baratoff (A and B) I{sub C}(T) behavior and Kulik-Omelianchuck (K and O) curves, because of proximity effect caused by the comparatively high value of s (up to 100 nm).

  18. Electron transport through a spin crossover junction. Perspectives from a wavefunction-based approach

    Science.gov (United States)

    Vela, Sergi; Verot, Martin; Fromager, Emmanuel; Robert, Vincent

    2017-02-01

    The present paper reports the application of a computational framework, based on the quantum master equation, the Fermi's golden Rule, and conventional wavefunction-based methods, to describe electron transport through a spin crossover molecular junction (Fe(bapbpy) (NCS)2, 1, bapbpy = N-(6-(6-(Pyridin-2-ylamino)pyridin-2-yl)pyridin-2-yl)-pyridin-2-amine). This scheme is an alternative to the standard approaches based on the relative position and nature of the frontier orbitals, as it evaluates the junction's Green's function by means of accurate state energies and wavefunctions. In the present work, those elements are calculated for the relevant states of the high- and low-spin species of 1, and they are used to evaluate the output conductance within a given range of bias- and gate-voltages. The contribution of the ground and low-lying excited states to the current is analyzed, and inspected in terms of their 2S + 1 Ms-states. In doing so, it is shown the relevance of treating not only the ground state in its maximum-Ms projection, as usually done in most computational-chemistry packages, but the whole spectrum of low-energy states of the molecule. Such improved representation of the junction has a notable impact on the total conductivity and, more importantly, it restores the equivalence between alpha and beta transport, which means that no spin polarization is observed in the absence of Zeeman splitting. Finally, this work inspects the strong- and weak-points of the suggested theoretical framework to understand electron transport through molecular switchable materials, identifies a pathway for future improvement, and offers a new insight into concepts that play a key role in spintronics.

  19. Large influence of capping layers on tunnel magnetoresistance in CoFe/MgO/CoFe magnetic tunnel junctions

    CERN Document Server

    Zhou, Jiaqi; Wang, Yin; Peng, Shouzhong; Qiao, Junfeng; Su, Li; Zeng, Lang; Lei, Na; Zhang, Youguang; Bournel, Arnaud

    2016-01-01

    We report the first-principles theoretical investigations of the tunnel magnetoresistance(TMR) effect in the symmetric capping layer/CoFe(001)/MgO(001)/CoFe(001)/capping layer magnetic tunnel junctions(MTJs) with Ta, Hf and Ir used as capping layer materials. Spin-resolved conductance and TMR ratios are shown and it is found that the TMR ratio is sensitive to the capping layer material. The spin polarization of s state in Co atom at the CoFe/capping layer interface is presented to explain the influence on TMR ratio caused by different capping layers, and we can obtain a high spin polarization value and a giant TMR ratio when Ir is used, demonstrating that Ir is an ideal capping layer material. We also study the spin-polarized transport properties in the Brillouin zone. In the parallel condition, a central broad peak is found in the majority-spin channel due to the {\\Delta}1 state, while sharp transmission probability peaks at some k||-points appear in the minority-spin channel. The sharp peak phenomenon is at...

  20. Comparison of intravenous urography and magnetic resonance urography in preoperative evaluation of pelvi-ureteric junction obstruction in children.

    Science.gov (United States)

    Sharma, Alok; Sodhi, Kushaljit Singh; Saxena, Akshay Kumar; Bhatia, Anmol; Menon, Prema; Rao, Katragadda L N; Khandelwal, Niranjan

    2016-01-01

    To compare intravenous urography (IVU) and magnetic resonance urography (MRU) in the preoperative evaluation of pelvi-ureteric junction obstruction (PUJO) in children. A total of 35 children up to 10 years of age in whom unilateral or bilateral PUJO were suspected on ultrasonography were enrolled in this prospective study. All children underwent IVU and MRU, and the findings were compared. Of the 70 kidneys evaluated, 14 (20%) were not visualized on IVU because of nonexcretion of contrast, whereas all the 70 (100%) kidneys were visualized on MRU. On IVU, nephrogram was not visualized in 66 (94.2%) of the 70 kidneys, whereas MRU showed prompt and homogeneous nephrogram in 68 (97.1%) of the 70 kidneys. No evidence of PUJO was seen in 31 (44.2%) kidneys on both IVU and MRU. IVU showed PUJO in 26 (37.1%) kidneys, whereas MRU showed it in 38 (54.2%) kidneys. MRU detected two duplex systems that were missed on IVU. A focal renal lesion and two incidental extra renal abnormalities were detected on MRU, which were not visualized on IVU. MRU is better than IVU, especially in case of poorly functioning kidneys which are not visualized on IVU. MRU also provides anatomic details of the ureter and vessels with better evaluation of renal parenchyma. It also has an additional advantage of detecting incidental extra renal abnormalities, if present.

  1. Atomic-Scale Structure and Local Chemistry of CoFeB-MgO Magnetic Tunnel Junctions.

    Science.gov (United States)

    Wang, Zhongchang; Saito, Mitsuhiro; McKenna, Keith P; Fukami, Shunsuke; Sato, Hideo; Ikeda, Shoji; Ohno, Hideo; Ikuhara, Yuichi

    2016-03-09

    Magnetic tunnel junctions (MTJs) constitute a promising building block for future nonvolatile memories and logic circuits. Despite their pivotal role, spatially resolving and chemically identifying each individual stacking layer remains challenging due to spatially localized features that complicate characterizations limiting understanding of the physics of MTJs. Here, we combine advanced electron microscopy, spectroscopy, and first-principles calculations to obtain a direct structural and chemical imaging of the atomically confined layers in a CoFeB-MgO MTJ, and clarify atom diffusion and interface structures in the MTJ following annealing. The combined techniques demonstrate that B diffuses out of CoFeB electrodes into Ta interstitial sites rather than MgO after annealing, and CoFe bonds atomically to MgO grains with an epitaxial orientation relationship by forming Fe(Co)-O bonds, yet without incorporation of CoFe in MgO. These findings afford a comprehensive perspective on structure and chemistry of MTJs, helping to develop high-performance spintronic devices by atomistic design.

  2. Stochastic macromodel of magnetic tunnel junction resistance variation and critical current dependence on resistance variation for SPICE simulation

    Science.gov (United States)

    Choi, Juntae; Song, Yunheub

    2017-04-01

    The resistance distribution of a magnetic tunnel junction (MTJ) shows nonuniformity according to various MTJ parameters. Moreover, this resistance variation leads to write-current density variation, which can cause serious problems when designing peripheral circuits for spin transfer torque magnetoresistance random access memory (STT-MRAM) and commercializing gigabit STT-MRAM. Therefore, a macromodel of MTJ including resistance, tunneling magnetoresistance ratio (TMR), and critical current variations is required for circuit designers to design MRAM peripheral circuits, that can overcome the various effects of the variations, such as write failure and read failure, and realize STT-MRAM. In this study, we investigated a stochastic behavior macromodel of the write current dependence on the MTJ resistance variation. The proposed model can possibly be used to analyze the write current density in relation to the resistance and TMR variations of MTJ with various parameter variations. It can be very helpful for designing STT-MRAM circuits and simulating the operation of STT-MRAM devices considering MTJ variations.

  3. Tunneling magnetoresistance in Fe{sub 3}Si/MgO/Fe{sub 3}Si(001) magnetic tunnel junctions

    Energy Technology Data Exchange (ETDEWEB)

    Tao, L. L.; Liang, S. H.; Liu, D. P.; Wei, H. X.; Han, X. F., E-mail: xfhan@iphy.ac.cn [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Wang, Jian [Department of Physics and the Center of Theoretical and Computational Physics, The University of Hong Kong, Hong Kong (China)

    2014-04-28

    We present a theoretical study of the tunneling magnetoresistance (TMR) and spin-polarized transport in Fe{sub 3}Si/MgO/Fe{sub 3}Si(001) magnetic tunnel junction (MTJ). It is found that the spin-polarized conductance and bias-dependent TMR ratios are rather sensitive to the structure of Fe{sub 3}Si electrode. From the symmetry analysis of the band structures, we found that there is no spin-polarized Δ{sub 1} symmetry bands crossing the Fermi level for the cubic Fe{sub 3}Si. In contrast, the tetragonal Fe{sub 3}Si driven by in-plane strain reveals half-metal nature in terms of Δ{sub 1} state. The giant TMR ratios are predicted for both MTJs with cubic and tetragonal Fe{sub 3}Si electrodes under zero bias. However, the giant TMR ratio resulting from interface resonant transmission for the former decreases rapidly with the bias. For the latter, the giant TMR ratio can maintain up to larger bias due to coherent transmission through the majority-spin Δ{sub 1} channel.

  4. Effect of RF pulsing biasing on the etching of magnetic tunnel junction materials using CH3OH.

    Science.gov (United States)

    Jeon, Min Hwan; Yun, Deok Hyun; Yang, Kyung Chae; Youn, Ji Youm; Lee, Du Yeong; Shim, Tae Hun; Park, Jea Gun; Yeom, Geun Young

    2014-12-01

    The magnetic tunnel junction (MTJ)-related materials such as CoFeB, CoPt, MgO, and Ru, and W were etched using CH3OH in a pulse-biased inductively coupled plasma system and the effect of bias pulsing (100% 30% duty percentage) on the etch characteristics of the MTJ-related materials was investigated at the substrate temperature of 200 degrees C. The etch selectivity of MTJ-related materials over W was improved by using pulse-biasing possibly due to the formation of more stable and volatile etch products during the pulse-off time and the removal of the compounds more easily on the etched CoFeB surface during the pulse-on time. X-ray photoelectron spectroscopy also showed that the use of lower duty percentage decreases the residue thickness remaining on the etched MTJ materials indirectly indicated the higher volatility of the etch products by the bias pulsing. The etching of nano-patterned CoFeB masked with W also showed more anisotropic etch profile by pulse-biasing probably due to the increased the etch selectivity of CoFeB over W and the decreased redeposition of etch products on the sidewall of the CoFeB features. The most anisotropic CoFeB etch profiles could be observed by using CH3OH gas in the pulse biasing of 30% duty ratio.

  5. Rectifying Properties of a Nitrogen/Boron-Doped Capped-Carbon-Nanotube-Based Molecular Junction

    Institute of Scientific and Technical Information of China (English)

    ZHAO Peng; LIU De-Sheng; ZHANG Ying; WANG Pei-Ji; ZHANG Zhong

    2011-01-01

    @@ Based on the non-equilibrium Green's function method and first-principles density functional theory calculations, we investigate the electronic transport properties of a nitrogen/boron-doped capped-single-walled carbonnanotube-based molecular junction.Obvious rectifying behavior is observed and it is strongly dependent on the doping site.The best rectifying performance can be carried out when the nitrogen/boron atom dopes at a carbon site in the second layer.Moreover, the rectifying performance can be further improved by adjusting the distance between the Cso nanotube caps.%Based on the non-equilibrium Green's function method and first-principles density functional theory calculations, we investigate the electronic transport properties of a nitrogen/boron-doped capped-single-walled carbon-nanotube-based molecular junction. Obvious rectifying behavior is observed and it is strongly dependent on the doping site. The best rectifying performance can be carried out when the nitrogen/boron atom dopes at a carbon site in the second layer. Moreover, the rectifying performance can be further improved by adjusting the distance between the C60 nanotube caps.

  6. Niobium nano-SQUIDs based on sub-micron tunnel junction fabricated by three-dimensional Focused Ion Beam sculpting

    Science.gov (United States)

    Fretto, M.; Enrico, E.; De Leo, N.; Boarino, L.; Lacquaniti, V.; Granata, C.; Russo, R.; Vettoliere, A.

    2014-05-01

    A three dimensional nano-SQUID (Superconducting Quantum Interference Device) has been realized in a vertical configuration (with the loop in the same plane of Josephson Tunneling Junctions, JTJs). The loop area is 0.25 μm2 corresponding to a modulation period of about 5 mT, the square JTJs have a side length of 0.3 μm. Josephson junction's fabrication is carried out combining optical lithography to pattern trilayer and three dimensional (3D) Focused Ion Beam (FIB) sculpting technique to define the junctions' and the loop's areas. Two different ion etching processes were performed, perpendicular and parallel to the multilayer, resulting in a precise 3D structure. Finally, a standard anodization was performed to eliminate the unstructured surface material generated by the high energetic ion beam assuring high quality junctions. Electric transport characteristics of the nanodevice measured at T = 4.2 K are reported, in particular the current-voltage characteristics and critical current vs external magnetic field. The high modulation depth of the critical current (up to 70% of the Ic at zero magnetic flux) and the device reliability are very encouraging in view of nanoscience applications.

  7. Nanoscale Magnetic Materials for Energy-Efficient Spin Based Transistors

    Science.gov (United States)

    Incorvia, Jean Anne Currivan

    In this dissertation, I study the physical behavior of nanoscale magnetic materials and build spin-based transistors that encode information in magnetic domain walls. It can be argued that energy dissipation is the most serious problem in modern electronics, and one that has been resistant to a breakthrough. Wasted heat during computing both wastes energy and hinders further technology scaling. This is an opportunity for physicists and engineers to come up with creative solutions for more energy-efficient computing. I present the device we have designed, called domain wall logic (DW-Logic). Information is stored in the position of a magnetic domain wall in a ferromagnetic wire and read out using a magnetic tunnel junction. This hybrid design uses electrical current as the input and output, keeping the device compatible with charge- based transistors. I build an iterative model to predict both the micromagnetic and circuit behavior of DW- Logic, showing a single device can operate as a universal gate. The model shows we can build complex circuits including an 18-gate Full Adder, and allows us to predict the device switching energy compared to complementary metal-oxide semiconductor (CMOS) transistors. Comparing ?15 nm feature nodes, I find DW-Logic made with perpendicular magnetic anisotropy materials, and utilizing both spin torque transfer and the Spin Hall effect, could operate with 1000x reduced switching energy compared to CMOS. I fabricate DW-Logic device prototypes and show in experiment they can act as AND and NAND gates. I demonstrate that one device can drive two subsequent devices, showing gain, which is a necessary requirement for fanout. I also build a clocked ring oscillator circuit to demonstrate successful bit propagation in a DW-Logic circuit and show that properly scaled devices can have improved operation. Through building the devices, I develop a novel fabrication method for patterning sub-25 nm magnetic wires with very low (˜ 2 nm) average edge

  8. Cryogenic Phase-Locking Loop System Based on SIS Tunnel Junction

    Science.gov (United States)

    Khudchenko, A. V.; Koshelets, V. P.; Kalashnikov, K. V.

    An ultra-wideband cryogenic phase-locking loop (CPLL) system is a new cryogenic device. The CPLL is intended for phase-locking of a Flux-Flow Oscillator (FFO) in a Superconducting Integrated Receiver (SIR) but can be used for any cryogenic terahertz oscillator. The key element of the CPLL is Cryogenic Phase Detector (CPD), a recently proposed new superconducting element. The CPD is an innovative implementation of superconductor-insulator-superconductor (SIS) tunnel junction. All components of the CPLL reside inside a cryostat at 4.2 K, with the loop length of about 50 cm and the total loop delay 5.5 ns. Such a small delay results in CPLL synchronization bandwidth as wide as 40 MHz and allows phase-locking of more than 60% of the power emitted by the FFO even for FFO linewidth of about 10 MHz. This percentage of phase-locked power three times exceeds that achieved with conventional room-temperature PLLs. Such an improvement enables reducing the FFO phase noise and extending the SIR operation range.Another new approach to the FFO phase-locking has been proposed and experimentally verified. The FFO has been synchronized by a cryogenic harmonic phase detector (CHPD) based on the SIS junction. The CHPD operates simultaneously as the harmonic mixer (HM) and phase detector. We have studied the HM based on the SIS junction theoretically; in particular we calculated 3D dependences of the HM output signal power versus the bias voltage and the LO power. Results of the calculations have been compared with experimental measurements. Good qualitative and quantitative correspondence has been achieved. The FFO phase-locking by the CHPD has been demonstrated. Such a PLL system is expected to be extra wideband. This concept is very promising for building of the multi-pixel SIR array.

  9. Direct Observation of Tunnelling through 100-nm-Wide All Metal Magnetic Junction into Si

    Institute of Scientific and Technical Information of China (English)

    Nam n. KIM; WANG Ke-Qiang; ZHANG Yu; WANG Jian-Qing

    2008-01-01

    @@ Nanoscaled spin-dependent tunnelling lines were patterned on doped Si and studied for tunnelling from the SDT ferromagnetic layer through an insulating barrier into Si. The injection contacts have the form of long strips with width and separation, ranging from 100 nm to 2 μm, and are patterned using e-beam lithography. The measured Ⅰ-Ⅴ characteristics versus temperature (80 to 300 K) on the 100 nm scaled devices between the layered-magnetic metals and the semiconductor clearly showed ballistic tunnelling, with weak dependence on the temperature.This is qualitatively different, at elevated temperatures, from 2-μm-wide scaled-up spin-dependent tunnelling structures, where thermal-ionic emission was observed to dominate carrier transport.

  10. Gorham disease of the craniocervical junction: X-ray, computed tomography, and magnetic resonance imaging findings.

    Science.gov (United States)

    Kilicoglu, Z Gamze; Kizildemir Kis, Naciye; Vardar Aker, Fügen; Berkman, M Zafer; Simsek, M Masum

    2013-05-01

    Gorham disease of massive osteolysis is a spontaneous, idiopathic, and progressive form of primary osteolysis. It has no age, sex, or race predilection, and patients are mostly asymptomatic until severe deformity or pathological fracture becomes evident. A patient with craniocervical involvement is presented, describing imaging findings with a review of the literature to provide an insight into the disorder. Case report and review of the literature. X-ray, computed tomography, and magnetic resonance imaging findings of a patient with findings related to the site of involvement. All images demonstrate osteolysis typically described for the disease. Differential diagnosis and key features are indicated. Operative findings and pathological analysis were also consistent with the findings. Patient's follow-up is also reported. This benign appearing yet disabling disease may become fatal in relation to the site involved. Acknowledging imaging findings may provide early diagnosis for timely intervention or supportive management. Copyright © 2013 Elsevier Inc. All rights reserved.

  11. Magnetic field mapper based on rotating coils

    CERN Document Server

    AUTHOR|(CDS)2087244; Arpaia, Pasquale

    This thesis presents a magnetic field mapper based on rotating coils. The requirements, the architecture, the conceptual design, and the prototype for straight magnets were shown. The proposed system is made up of a rotating coil transducer and a train-like system for longitudinal motion and positioning inside magnet bore. The mapper allows a localized measurement of magnetic fields and the variation of the harmonic multipole content in the magnet ends. The proof-of-principle demonstration and the experimental characterization of the rotating-coil transducer specifically conceived for mapping validated the main objective of satisfying the magnetic measurement needs of the next generation of compact accelerators.

  12. Magnetic nanoparticle-based cancer therapy

    Institute of Scientific and Technical Information of China (English)

    Yu Jing; Huang Dong-Yan; Muhammad Zubair Yousaf; Hou Yang-Long; Gao Song

    2013-01-01

    Nanoparticles (NPs) with easily modified surfaces have been playing an important role in biomedicine.As cancer is one of the major causes of death,tremendous efforts have been devoted to advance the methods of cancer diagnosis and therapy.Recently,magnetic nanoparticles (MNPs) that are responsive to a magnetic field have shown great promise in cancer therapy.Compared with traditional cancer therapy,magnetic field triggered therapeutic approaches can treat cancer in an unconventional but more effective and safer way.In this review,we will discuss the recent progress in cancer therapies based on MNPs,mainly including magnetic hyperthermia,magnetic specific targeting,magnetically controlled drug delivery,magnetofection,and magnetic switches for controlling cell fate.Some recently developed strategies such as magnetic resonance imaging (MRI) monitoring cancer therapy and magnetic tissue engineering are also addressed.

  13. Equivalent Josephson junctions

    Science.gov (United States)

    Boyadjiev, T. L.; Semerdjieva, E. G.; Shukrinov, Yu. M.

    2008-01-01

    The magnetic field dependences of critical current are numerically constructed for a long Josephson junction with a shunt-or resistor-type microscopic inhomogeneities and compared to the critical curve of a junction with exponentially varying width. The numerical results show that it is adequate to replace the distributed inhomogeneity of a long Josephson junction by an inhomogeneity localized at one of its ends, which has certain technological advantages. It is also shown that the critical curves of junctions with exponentially varying width and inhomogeneities localized at the ends are unaffected by the mixed fluxon-antifluxon distributions of the magnetic flow. This fact may explain the improvement of the spectra of microwave radiation noted in the literature.

  14. Design optimization of thin-film/wafer-based tandem junction solar cells using analytical modeling

    Science.gov (United States)

    Davidson, Lauren; Toor, Fatima

    2016-03-01

    Several research groups are developing solar cells of varying designs and materials that are high efficiency as well as cost competitive with the single junction silicon (Si) solar cells commercially produced today. One of these solar cell designs is a tandem junction solar cell comprised of perovskite (CH3NH3PbI3) and silicon (Si). Loper et al.1 was able to create a 13.4% efficient tandem cell using a perovskite top cell and a Si bottom cell, and researchers are confident that the perovskite/Si tandem cell can be optimized in order to reach higher efficiencies without introducing expensive manufacturing processes. However, there are currently no commercially available software capable of modeling a tandem cell that is based on a thin-film based bottom cell and a wafer-based top cell. While PC1D2 and SCAPS3 are able to model tandem cells comprised solely of thin-film absorbers or solely of wafer-based absorbers, they result in convergence errors if a thin-film/wafer-based tandem cell, such as the perovskite/ Si cell, is modeled. The Matlab-based analytical model presented in this work is capable of modeling a thin-film/wafer-based tandem solar cell. The model allows a user to adjust the top and bottom cell parameters, such as reflectivity, material bandgaps, donor and acceptor densities, and material thicknesses, in order to optimize the short circuit current, open circuit voltage, and quantum efficiency of the tandem solar cell. Using the Matlab-based analytical model, we were able optimize a perovskite/Si tandem cell with an efficiency greater than 30%.

  15. Impact of sub-volume excitation on improving overdrive delay product of sub-40 nm perpendicular magnetic tunnel junctions in adiabatic regime and its beyond

    Science.gov (United States)

    Ohuchida, Satoshi; Ito, Kenchi; Endoh, Tetsuo

    2015-04-01

    In this paper, we introduced a new figure of merit, overdrive delay product Pod which is defined as the product of overdrive factor (I/Ic0 - 1) and delay of transit time, to evaluate power consumption and switching delay from the viewpoint of perpendicular magnetic tunnel junctions (p-MTJs) switching. The impact of sub-volume excitation on the dependence of overdrive delay product on the junction size and material parameters of p-MTJs in adiabatic regime were clarified. Two strategies to decrease the Pod were proposed. The first strategy is scaling down the junction size free from sub-volume effect. A reduction more than 86% of Pod of p-MTJ with exchange stiffness Aij = 19 pJ/m was realized by scaling down the junction size from 70 to 10 nm when I/Ic0 - 1 = 0.5. The second strategy is to increase Aij to suppress the effect of sub-volume excitation. A 26% reduction of the overdrive delay product was realized by enlarging Aij from 10 to 31 pJ/m with annealing process in the p-MTJ with the diameter of 40 nm. These results indicate that p-MTJs of embedded magnetoresistive random access memory (MRAM) should be scaled down under 30 nm where no sub-volume effect occurs for high speed programing.

  16. A non-erasable magnetic memory based on the magnetic permeability

    Energy Technology Data Exchange (ETDEWEB)

    Petrie, J.R.; Wieland, K.A.; Burke, R.A.; Newburgh, G.A. [U.S. Army Research Laboratory, 2800 Powder Mill Rd, Adelphi, MD (United States); Burnette, J.E. [Spin Transfer Technologies, 33 Arch Street # 3200, Boston, MA (United States); Fischer, G.A. [U.S. Army Research Laboratory, 2800 Powder Mill Rd, Adelphi, MD (United States); Edelstein, A.S., E-mail: alan.s.edelstein.civ@us.army.mil [U.S. Army Research Laboratory, 2800 Powder Mill Rd, Adelphi, MD (United States)

    2014-06-01

    A non-erasable memory based on using differences in the magnetic permeability is demonstrated. The method can potentially store information indefinitely. Initially the high permeability bits were 10–50 μm wide lines of sputtered permalloy (Ni{sub 81}Fe{sub 19}) on a glass substrate. In a second writing technique a continuous film of amorphous, high permeability ferromagnetic Metglas (Fe{sub 78}Si{sub 13}B{sub 9}) was sputtered onto a similar glass substrate. Low permeability, crystalline 50 μm wide lines were then written in the film by laser heating. Both types of written media were read by applying an external probe field that is locally modified by the permeability of each bit. The modifications in the probe field were read by a nearby set of 10 micron wide magnetic tunnel junctions with a signal-to-noise ratio of up to 45 dB. This large response to changes in bit permeability is not altered after the media has been exposed to a 6400 Oe field. While being immediately applicable for data archiving and secure information storage, higher densities are possible with smaller read and write heads. - Highlights: • We demonstrate a non-erasable memory based on changes in the magnetic permeability. • Large change in permeability occur when Metglas changes from amorphous to crystalline. • Micron size regions of Metglas can be crystallized using a laser. • Permeability changes read by observing deviations of a probe field with an MTJ.

  17. Theoretical results on the tandem junction solar cell based on its Ebers-Moll transistor model

    Science.gov (United States)

    Goradia, C.; Vaughn, J.; Baraona, C. R.

    1980-01-01

    A one-dimensional theoretical model of the tandem junction solar cell (TJC) with base resistivity greater than about 1 ohm-cm and under low level injection has been derived. This model extends a previously published conceptual model which treats the TJC as an npn transistor. The model gives theoretical expressions for each of the Ebers-Moll type currents of the illuminated TJC and allows for the calculation of the spectral response, I(sc), V(oc), FF and eta under variation of one or more of the geometrical and material parameters and 1MeV electron fluence. Results of computer calculations based on this model are presented and discussed. These results indicate that for space applications, both a high beginning of life efficiency, greater than 15% AM0, and a high radiation tolerance can be achieved only with thin (less than 50 microns) TJC's with high base resistivity (greater than 10 ohm-cm).

  18. Photoactive molecular junctions based on self-assembled monolayers of indoline dyes.

    Science.gov (United States)

    Caranzi, Lorenzo; Pace, Giuseppina; Guarnera, Simone; Canesi, Eleonora V; Brambilla, Luigi; Raavi, Sai S K; Petrozza, Annamaria; Caironi, Mario

    2014-11-26

    We demonstrate the feasibility of a photodetector based on an ensemble molecular junction, where a self-assembled monolayer of an organic donor-acceptor dye is directly sandwiched between two electrodes. In such a device, upon photoexcitation and generation of a charge-transfer state on the molecule, charges are dissociated and directly collected at the electrodes without the need of transport through a bulk phase, as in usual photodetectors. We show that the device can work in photovoltaic regime and the spectral response can be tuned by varying the light absorbing dye. Therefore, the electro-optical properties of the downscaled device can be unambiguously related to the physical-chemical properties of the molecules, a commonly difficult point to demonstrate in a molecular junction device, because of the uncertainties of the interplay between molecules and electrodes. The proposed device, which relies on a simple self-assembly process, has a strong potentiality for fast responding, downscaled detectors, ultimately limited by charge dissociation dynamics, and can be considered also as a useful tool to investigate fundamental electro-optical processes in molecular monolayers.

  19. Imaging soft x-ray spectrometers based on superconducting tunnel junctions

    Science.gov (United States)

    Verhoeve, P.; Martin, D. D. E.; Venn, R.

    2010-07-01

    X-ray detectors based on superconducting tunnel junctions (STJs) have demonstrated good energy resolution in the soft X-ray energy range 0.1-6 keV. In particular DROIDS (Distributed Read Out Imaging Devices), consisting of a superconducting absorber strip with superconducting tunnel junctions as read-out devices on either end, could combine this high resolving power with a large sensitive area and good soft X-ray detection efficiency. In this paper we present results on the spectroscopic performance of Al and Ta/Al DROIDs with different absorber materials (Ta, Re) and with variations in absorber configurations: our standard absorber integrated with the read-out structure is compared with absorbers deposited after definition of the read-out structure. The latter allows maximising the detection efficiency through thicker layers and different absorber materials. Also, absorbers which are electrically coupled to the readout structure are compared to insulated absorbers which couple to the readout structure by phonon exchange across a thin dielectric layer. New process routes have been designed for all new configurations. Whilst not all these structures have been fabricated successfully yet, our integrated absorber sofar exhibits the best performance, with 2.45 eV FWHM at 400 eV and 16.6 eV FWHM at 5.9 keV.

  20. Thermal influence on charge carrier transport in solar cells based on GaAs PN junctions

    Energy Technology Data Exchange (ETDEWEB)

    Osses-Márquez, Juan; Calderón-Muñoz, Williams R., E-mail: wicalder@ing.uchile.cl [Department of Mechanical Engineering, University of Chile, Beauchef 850, Santiago (Chile)

    2014-10-21

    The electron and hole one-dimensional transport in a solar cell based on a Gallium Arsenide (GaAs) PN junction and its dependency with electron and lattice temperatures are studied here. Electrons and heat transport are treated on an equal footing, and a cell operating at high temperatures using concentrators is considered. The equations of a two-temperature hydrodynamic model are written in terms of asymptotic expansions for the dependent variables with the electron Reynolds number as a perturbation parameter. The dependency of the electron and hole densities through the junction with the temperature is analyzed solving the steady-state model at low Reynolds numbers. Lattice temperature distribution throughout the device is obtained considering the change of kinetic energy of electrons due to interactions with the lattice and heat absorbed from sunlight. In terms of performance, higher values of power output are obtained with low lattice temperature and hot energy carriers. This modeling contributes to improve the design of heat exchange devices and thermal management strategies in photovoltaic technologies.

  1. Etch characteristics of magnetic tunnel junction materials using bias pulsing in the CH4/N2O inductively coupled plasma.

    Science.gov (United States)

    Jeon, Min Hwan; Youn, Ji Youn; Yang, Kyung Chae; Yun, Deok Hyun; Lee, Du Yeong; Shim, Tae Hun; Park, Jea Gun; Yeom, Geun Young

    2014-12-01

    The etch characteristics of magnetic tunneling junction (MTJ) related materials such as CoFeB, MgO, FePt, Ru, and W as hard mask have been investigated as functions of rf pulse biasing, substrate heating, and CH4/N2O gas combination in an inductively coupled plasma system. When CH4/N2O gas ratio was varied, at CH4/N2O gas ratio of 2:1, not only the highest etch rates but also the highest etch selectivity over W could be obtained. By increasing the substrate temperature, the linear increase of both the etch rates of MTJ materials and the etch selectivity over W could be obtained. The use of the rf pulse biasing improved the etch selectivity of the MTJ materials over hard mask such as W further. The surface roughness and residual thickness remaining on the etched surface of the CoFeB were also decreased by using rf pulse biasing and with the decrease of rf duty percentage. The improvement of etch characteristics by substrate heating and rf pulse biasing was possibly related to the formation of more stable and volatile etch compounds and the removal of chemically reacted compounds more easily on the etched CoFeB surface. Highly selective etching of MTJ materials over the hard mask could be obtained by using the rf pulse biasing of 30% of duty ratio and by increasing the substrate temperature to 200 degrees C in the CH4/N2O (2:1) plasmas.

  2. Ultra-low switching energy and scaling in electric-field-controlled nanoscale magnetic tunnel junctions with high resistance-area product

    Energy Technology Data Exchange (ETDEWEB)

    Grezes, C.; Alzate, J. G.; Cai, X.; Wang, K. L. [Department of Electrical Engineering, University of California, Los Angeles, California 90095 (United States); Ebrahimi, F.; Khalili Amiri, P. [Department of Electrical Engineering, University of California, Los Angeles, California 90095 (United States); Inston, Inc., Los Angeles, California 90024 (United States); Katine, J. A. [HGST, Inc., San Jose, California 95135 (United States); Langer, J.; Ocker, B. [Singulus Technologies AG, Kahl am Main 63796 (Germany)

    2016-01-04

    We report electric-field-induced switching with write energies down to 6 fJ/bit for switching times of 0.5 ns, in nanoscale perpendicular magnetic tunnel junctions (MTJs) with high resistance-area product and diameters down to 50 nm. The ultra-low switching energy is made possible by a thick MgO barrier that ensures negligible spin-transfer torque contributions, along with a reduction of the Ohmic dissipation. We find that the switching voltage and time are insensitive to the junction diameter for high-resistance MTJs, a result accounted for by a macrospin model of purely voltage-induced switching. The measured performance enables integration with same-size CMOS transistors in compact memory and logic integrated circuits.

  3. Analyses and Simulation of V-I Characteristics for Solar Cells Based on P-N Junction

    Institute of Scientific and Technical Information of China (English)

    ZHENG Jian-bang; REN Ju; GUO Wen-ge; HOU Chao-qi

    2005-01-01

    Through theoretical analyses of the Shockley equation and the difference between a practical P-N junction and its ideal model, the mathematical models of P-N junction and solar cells had been obtained. With Matlab software, the V-I characteristics of diodes and solar cells were simulated, and a computer simulation model of the solar cells based on P-N junction was also established. Based on the simulation model, the influences of solar cell's internal resistances on open-circuit voltage and short-circuit current under certain illumination were numerically analyzed and solved. The simulation results showed that the equivalent series resistance and shunt resistance could strongly affect the V-I characteristics of solar cell, but their influence styles were different.

  4. Petri Net-Based Model of Helicobacter pylori Mediated Disruption of Tight Junction Proteins in Stomach Lining during Gastric Carcinoma

    Directory of Open Access Journals (Sweden)

    Anam Naz

    2017-09-01

    Full Text Available Tight junctions help prevent the passage of digestive enzymes and microorganisms through the space between adjacent epithelial cells lining. However, Helicobacter pylori encoded virulence factors negatively regulate these tight junctions and contribute to dysfunction of gastric mucosa. Here, we have predicted the regulation of important tight junction proteins, such as Zonula occludens-1, Claudin-2 and Connexin32 in the presence of pathogenic proteins. Molecular events such as post translational modifications and crosstalk between phosphorylation, O-glycosylation, palmitoylation and methylation are explored which may compromise the integrity of these tight junction proteins. Furthermore, the signaling pathways disrupted by dysregulated kinases, proteins and post-translational modifications are reviewed to design an abstracted computational model showing the situation-dependent dynamic behaviors of these biological processes and entities. A qualitative hybrid Petri Net model is therefore constructed showing the altered host pathways in the presence of virulence factor cytotoxin-associated gene A, leading to the disruption of tight junction proteins. The model is qualitative logic-based, which does not depend on any kinetic parameter and quantitative data and depends on knowledge derived from experiments. The designed model provides insights into the tight junction disruption and disease progression. Model is then verified by the available experimental data, nevertheless formal in vitro experimentation is a promising way to ensure its validation. The major findings propose that H. pylori activated kinases are responsible to trigger specific post translational modifications within tight junction proteins, at specific sites. These modifications may favor alterations in gastric barrier and provide a route to bacterial invasion into host cells.

  5. Effect of thermal-annealing on the magnetoresistance of manganite-based junctions

    Institute of Scientific and Technical Information of China (English)

    Xie Yan-Wu; Shen Bao-Gen; Sun Ji-Rong

    2008-01-01

    Thermal-annealing has been widely used in modulating the oxygen content of manganites. In this work, we have studied the effect of annealing on the transport properties and magnetoresistance of junctions composed of a La0.9Ca0.1MnO3+δ film and a Nb-doped SrTiO3 substrate. We have demonstrated that the magnetoresistance of junctions is strongly dependent on the annealing conditions: From the junction annealed-in-air to the junction annealed-in-vacuum, the magnetoresistance near 0-V bias can vary from ~-60% to~0. A possible mechanism accounting for this phenomenon is discussed.

  6. Properties of Contact Resistance towards Realization of Graphene-based Three-Branch Junction Device

    Science.gov (United States)

    Rahman, S. F. A.; Hashim, A. M.; Ali, N. K.; Rusop, M.; Nafarizal, N.

    2011-05-01

    A three-branch junction (TBJ) nanowire device is shown to exhibit a unique nonlinear input-output characteristics. The effect of contact resistance on such characteristics is investigated. It is shown that metal contact having small contact resistance is required so that such nonlinear characteristics of TBJ device can be maintained. The graphene-based back-gated FET device structure and transmission line method are proposed and discussed in order to determine the contact resistance of metal/graphene interface. The preparation of graphene layer and its characterization using conventional methods are presented and discussed. These basic preliminary results provide useful guidance and information for the fabrication of actual devices which are on the way.

  7. Discriminating single-molecule sensing by crown-ether-based molecular junctions

    Science.gov (United States)

    Ismael, Ali K.; Al-Jobory, Alaa; Grace, Iain; Lambert, Colin J.

    2017-02-01

    Crown-ether molecules are well known to selectively bind alkali atoms, so by incorporating these within wires, any change in electrical conductance of the wire upon binding leads to discriminating sensing. Using a density functional theory-based approach to quantum transport, we investigate the potential sensing capabilities of single-molecule junctions formed from crown ethers attached to anthraquinone units, which are in turn attached to gold electrodes via alkyl chains. We calculate the change in electrical conductance for binding of three different alkali ions (lithium, sodium, and potassium). Depending on the nature of the ionic analyte, the conductance is enhanced by different amounts. This change in electrical conductance is due to charge transfer from the ion to molecular wire causing the molecular resonances to shift closer to the electrode Fermi energy.

  8. Multiple tunnel junctions based nanowire photodetector model for single charge detection

    Science.gov (United States)

    Chatbouri, Samir; Touati, A.; Troudi, M.; Sghaier, N.; Kalboussi, A.

    2013-07-01

    In this paper we propose a new silicon nanowire photodetector model based on a single-electron transistor for single charge detection (photo-NWSET). In the first part of this work we present the two blocks of the device structure (reading and detection blocks). The presented model is consisting of two blocks capacitively coupled. The first SET (SET1) is supposed to read the charge whereas the detection block is represented by the nanowire (NW) system associated to an optical source. We modeled the NW by a series of seven islands separated by eight tunnel junctions (8TJs). In the second part of this work, we investigate the effects of photoexcitation on Id-Vg curves and we present results obtained on the output (photo-NWSET) characteristics after variation of power illumination and response time.

  9. Confined State and Electronic Transport in an Artificial Graphene-Based Tunnel Junction

    Institute of Scientific and Technical Information of China (English)

    袁建辉; 张建军; 曾奇军; 张俊佩; 成泽

    2011-01-01

    Artificial graphene structures embedded in semiconductors could open novel routes for studies of electron interactions in 1ow-dimensional systems. We propose a way to manipulate the transport properties of massless Dirac fermions in an artificial graphene-based tunnel junction. Velocity-modulation control of electron wave propagation in the different regions can be regarded as velocity barriers. Transmission probability of electron is affected profoundly by this velocity barrier. We find that there is no confinement for Dirac electron as the velocity ratio ζ is less than 1, but when the velocity ratio is larger than 1 the confined state appears in the continuum band. These localized Dirac electrons may lead to the decreasing of transmission probability.

  10. Josephson tunnel junctions with ferromagnetic interlayer

    Energy Technology Data Exchange (ETDEWEB)

    Weides, M.P.

    2006-07-01

    Superconductivity and ferromagnetism are well-known physical properties of solid states that have been widely studied and long thought about as antagonistic phenomena due to difference in spin ordering. It turns out that the combination of both superconductor and ferromagnet leads to a very rich and interesting physics. One particular example, the phase oscillations of the superconducting order parameter inside the ferromagnet, will play a major role for the devices discussed in this work. In this thesis, I present Josephson junctions with a thin Al{sub 2}O{sub 3} tunnel barrier and a ferromagnetic interlayer, i.e. superconductor-insulator-ferromagnet-superconductor (SIFS) stacks. The fabrication of junctions was optimized regarding the insulation of electrodes and the homogeneity of the current transport. The junctions were either in the 0 or {pi} coupled ground state, depending on the thickness of the ferromagnetic layer and on temperature. The influence of ferromagnetic layer thickness on the transport properties and the coupling (0, {pi}) of SIFS tunnel junctions was studied. Furthermore, using a stepped ferromagnetic layer with well-chosen thicknesses, I obtained the so-called 0-{pi} Josephson junction. At a certain temperature this 0-{pi} junction can be made perfectly symmetric. In this case the ground state corresponds to a vortex of supercurrent creating a magnetic flux which is a fraction of the magnetic flux quantum {phi}{sub 0}. Such structures allow to study the physics of fractional vortices and to build various electronic circuits based on them. The SIFS junctions presented here have an exponentially vanishing damping at T {yields} 0. The SIFS technology developed within the framework of this work may be used to construct classical and quantum devices such as oscillators, memory cells and qubits. (orig.)

  11. Oscillatory behavior of the tunnel magnetoresistance due to thickness variations in Ta|CoFe|MgO magnetic tunnel junctions: A first-principles study

    Science.gov (United States)

    Sankaran, K.; Swerts, J.; Couet, S.; Stokbro, K.; Pourtois, G.

    2016-09-01

    To investigate the impact of both the CoFe ferromagnetic layer thickness and the capping paramagnetic layer on the tunnel magnetoresistance (TMR), we performed first-principles simulations on epitaxial magnetic tunnel junctions contacted with either CoFe or Ta paramagnetic capping layers. We observed a strong oscillation of the TMR amplitude with respect to the thickness of the ferromagnetic layer. The TMR is found to be amplified whenever the MgO spin tunnel barrier is thickened. Quantization of the electronic structure of the ferromagnetic layers is found to be at the origin of this oscillatory behavior. Metals such as Ta contacting the magnetic layer are found to enhance the amplitude of the oscillations due to the occurrence of an interface dipole. The latter drives the band alignment and tunes the nature of the spin channels that are active during the tunneling process. Subsequently, the regular transmission spin channels are modulated in the magnetic tunnel junction stack and other complex ones are being activated.

  12. Building memristive and radiation hardness TiO{sub 2}-based junctions

    Energy Technology Data Exchange (ETDEWEB)

    Ghenzi, N., E-mail: n.ghenzi@gmail.com [Gerencia de Investigación y Aplicaciones, Comisión Nacional de Energía Atómica (Argentina); Rubi, D. [Gerencia de Investigación y Aplicaciones, Comisión Nacional de Energía Atómica (Argentina); ECyT, UNSAM, Martín de Irigoyen 3100, 1650 San Martín, Bs As (Argentina); Consejo Nacional de Investigaciones Científicas y Técnicas (CONICET) (Argentina); Mangano, E.; Gimenez, G. [Instituto Nacional de Tecnología Industrial (INTI) (Argentina); Lell, J. [Gerencia de Investigación y Aplicaciones, Comisión Nacional de Energía Atómica (Argentina); Zelcer, A. [Gerencia Química, Comisión Nacional de Energía Atómica (Argentina); ECyT, UNSAM, Martín de Irigoyen 3100, 1650 San Martín, Bs As (Argentina); Stoliar, P. [ECyT, UNSAM, Martín de Irigoyen 3100, 1650 San Martín, Bs As (Argentina); IMN, Université de Nantes, CNRS, 2 rue de la Houssinière, BP 32229, 44322 Nantes (France); and others

    2014-01-01

    We study micro-scale TiO{sub 2} junctions that are suitable to be used as resistive random-access memory nonvolatile devices with radiation hardness memristive properties. The fabrication and structural and electrical characterization of the junctions are presented. We obtained a retentivity of 10{sup 5} s, an endurance of 10{sup 4} cycles and reliable switching with short electrical pulses (time-width below 10 ns). Additionally, the devices were exposed to 25 MeV oxygen ions. Then, we performed electrical measurements comparing pristine and irradiated devices in order to check the feasibility of using these junctions as memory elements with memristive and radiation hardness properties. - Highlights: • We fabricated radiation hardness memristive metal insulator metal junctions. • We characterized the structural properties of the devices. • We showed the feasibility of the junctions as a non-volatile memory.

  13. Reliability enhancement due to in-situ post-oxidation of sputtered MgO barrier in double MgO barrier magnetic tunnel junction

    Science.gov (United States)

    Yoshida, Chikako; Noshiro, Hideyuki; Yamazaki, Yuichi; Sugii, Toshihiro

    2017-06-01

    We have investigated the effects of in-situ post-oxidation (PO) of a sputtered MgO barrier in a double-MgO-barrier magnetic tunnel junction (MTJ) and found that the short error rate was significantly reduced, the magnetoresistance (MR) ratio was increased approximately 18%, and the endurance lifetime was extend. In addition, we found that the distribution of breakdown number (a measure of endurance) exhibits trimodal characteristics, which indicates competition between extrinsic and intrinsic failures. This improvement in reliability might be related to the suppression of Fe and Co diffusion to the MgO barrier, as revealed by electron energy-loss spectroscopy (EELS) analysis.

  14. Tunable 0–π transition by interband coupling in iron-based superconductor Josephson junctions

    Science.gov (United States)

    Tao, Y. C.; Liu, S. Y.; Bu, N.; Wang, J.; Di, Y. S.

    2016-01-01

    An extended four-component Bogoliubov–de Gennes equation is applied to study the Josephson effect in ballistic limit between either two iron-based superconductors (SCs) or an iron-based SC and a conventional s-wave SC, separated by a normal metal. A 0–π transition as a function of interband coupling strength α is always exhibited, arising from the tuning of mixing between the two trajectories with opposite phases. The novel property can be experimentally used to discriminate the {s}+/- -wave pairing symmetry in the iron-based SCs from the {s}++-wave one in MgB2. The effect of interface transparency on the 0–π transition is also presented. The 0–π transition as a function of α is wholly distinct from that as a function of barrier strength or temperature in recent theories (Linder et al 2009 Phys. Rev. B 80 020503(R)). The possible experimental probe of the phase-shift effect in iron-based SC Josephson junctions is commented on as well.

  15. Comparative Study on Single-Molecule Junctions of Alkane- and Benzene-Based Molecules with Carboxylic Acid/Aldehyde as the Anchoring Groups

    Science.gov (United States)

    Chen, Fang; Peng, Lin-Lu; Hong, Ze-Wen; Mao, Jin-Chuan; Zheng, Ju-Fang; Shao, Yong; Niu, Zhen-Jiang; Zhou, Xiao-Shun

    2016-08-01

    We have measured the alkane and benzene-based molecules with aldehyde and carboxylic acid as anchoring groups by using the electrochemical jump-to-contact scanning tunneling microscopy break junction (ECSTM-BJ) approach. The results show that molecule with benzene backbone has better peak shape and intensity than those with alkane backbone. Typically, high junction formation probability for same anchoring group (aldehyde and carboxylic acid) with benzene backbone is found, which contributes to the stronger attractive interaction between Cu and molecules with benzene backbone. The present work shows the import role of backbone in junction, which can guide the design molecule to form effective junction for studying molecular electronics.

  16. Two-Dimensional Measurement of n+-p Asymmetrical Junctions in Multicrystalline Silicon Solar Cells Using AFM-Based Electrical Techniques with Nanometer Resolution: Preprint

    Energy Technology Data Exchange (ETDEWEB)

    Jiang, C. S.; Moutinho, H. R.; Li, J. V.; Al-Jassim, M. M.; Heath, J. T.

    2011-07-01

    Lateral inhomogeneities of modern solar cells demand direct electrical imaging with nanometer resolution. We show that atomic force microscopy (AFM)-based electrical techniques provide unique junction characterizations, giving a two-dimensional determination of junction locations. Two AFM-based techniques, scanning capacitance microscopy/spectroscopy (SCM/SCS) and scanning Kelvin probe force microscopy (SKPFM), were significantly improved and applied to the junction characterizations of multicrystalline silicon (mc-Si) cells. The SCS spectra were taken pixel by pixel by precisely controlling the tip positions in the junction area. The spectra reveal distinctive features that depend closely on the position relative to the electrical junction, which allows us to indentify the electrical junction location. In addition, SKPFM directly probes the built-in potential over the junction area modified by the surface band bending, which allows us to deduce the metallurgical junction location by identifying a peak of the electric field. Our results demonstrate resolutions of 10-40 nm, depending on the techniques (SCS or SKPFM). These direct electrical measurements with nanometer resolution and intrinsic two-dimensional capability are well suited for investigating the junction distribution of solar cells with lateral inhomogeneities.

  17. Organic- and molecule-based magnets

    Directory of Open Access Journals (Sweden)

    Joel S. Miller

    2014-06-01

    Full Text Available Magnets have been known for millennia and are strongly associated with metals (e.g. Fe, Co, Ni, Gd, intermetallics (e.g. Co17Sm2, Nd2Fe14B, or their oxides (e.g. CrO2, Fe3O4. The development of new magnetic materials has led to ubiquitous uses for electricity generation, memory storage media, and devices such as electric motors, microphones, telephones and computers. These magnets are fabricated via energy demanding metallurgical methods and are frequently brittle, chemically reactive, and possess elements in limited supply. The end of the last millennium has seen a surge in using organic, molecular, and polymeric materials as substitutes for metal and ceramic materials in many applications. Also, in the past few decades organic and molecule-based materials have been shown to magnetically order with examples having ordering temperatures exceeding room temperature, higher-than-iron saturation magnetizations, large coercive fields, etc. An overview of organic-based, and more generally molecule-based magnetic materials that exhibit unusual magnetic properties ranging from ferromagnets to synthetic antiferromagnets with emphasis on magnetic ordering using examples possessing organic nitriles (—CN or inorganic cyanide (CN− is described.

  18. Hard molecule-based magnet of Fe

    Science.gov (United States)

    Vaz, M. G. F.; Ardisson, J. D.; Stumpf, H. O.; Macedo, W. A. A.

    2001-05-01

    A new molecule-based magnet containing Fe 2+, Fe 3+, Cu(opba) 2- and Bu 4N +, with opba=ortho-phenylenebis(oxamato) and Bu 4N +=tetra-n-butylammonium, was synthesized. The samples were characterized by infrared spectroscopy, elemental analysis, atomic absorption, vibrating sample magnetometry and 57Fe Mössbauer spectroscopy. The magnetic measurements show that the compound presents a magnetic transition around 25 K and a high coercivity, around 1.3 T. Above the transition temperature, the Mössbauer spectrum is dominated by a broad doublet characteristic of Fe 2+. At 20 K, the spectrum shows clear magnetic splitting and at least two non-equivalent Fe sites can be identified. To the best of our knowledge, this compound presents the highest coercive field observed for an iron-based molecular magnetic system.

  19. Hard molecule-based magnet of Fe

    Energy Technology Data Exchange (ETDEWEB)

    Vaz, M.G.F. E-mail: vaz@urano.cdtn.br; Ardisson, J.D.; Stumpf, H.O.; Macedo, W.A.A

    2001-05-01

    A new molecule-based magnet containing Fe{sup 2+}, Fe{sup 3+}, Cu(opba){sup 2-} and Bu{sub 4}N{sup +}, with opba=ortho-phenylenebis(oxamato) and Bu{sub 4}N{sup +}=tetra-n-butylammonium, was synthesized. The samples were characterized by infrared spectroscopy, elemental analysis, atomic absorption, vibrating sample magnetometry and {sup 57}Fe Moessbauer spectroscopy. The magnetic measurements show that the compound presents a magnetic transition around 25 K and a high coercivity, around 1.3 T. Above the transition temperature, the Moessbauer spectrum is dominated by a broad doublet characteristic of Fe{sup 2+}. At 20 K, the spectrum shows clear magnetic splitting and at least two non-equivalent Fe sites can be identified. To the best of our knowledge, this compound presents the highest coercive field observed for an iron-based molecular magnetic system.

  20. Area-dependence of spin-triplet supercurrent in ferromagnetic Josephson junctions

    Science.gov (United States)

    Wang, Yixing; Pratt, W. P., Jr.; Birge, Norman O.

    2012-06-01

    Josephson junctions containing multiple ferromagnetic layers can carry spin-triplet supercurrent under certain conditions. Large-area junctions containing multiple domains are expected to have a random distribution of 0 or π coupling across the junction surface, whereas magnetized samples should have uniquely π coupling everywhere. We have measured the area-dependence of the critical current in such junctions, and confirm that the critical current scales linearly with area in magnetized junctions. For as-grown (multidomain) samples, the results are mixed. Samples grown on a thick Nb base exhibit critical currents that scale sublinearly with area, while samples grown on a smoother Nb/Al multilayer base exhibit critical currents that scale linearly with area. The latter results are consistent with a theoretical picture due to Zyuzin and Spivak that predicts that the as-grown samples should have global π/2 coupling.

  1. Evaluating In-Clique and Topological Parallelism Strategies for Junction Tree-Based Bayesian Inference Algorithm on the Cray XMT

    Energy Technology Data Exchange (ETDEWEB)

    Chin, George; Choudhury, Sutanay; Kangas, Lars J.; McFarlane, Sally A.; Marquez, Andres

    2011-09-01

    Long viewed as a strong statistical inference technique, Bayesian networks have emerged to be an important class of applications for high-performance computing. We have applied an architecture-conscious approach to parallelizing the Lauritzen-Spiegelhalter Junction Tree algorithm for exact inferencing in Bayesian networks. In optimizing the Junction Tree algorithm, we have implemented both in-clique and topological parallelism strategies to best leverage the fine-grained synchronization and massive-scale multithreading of the Cray XMT architecture. Two topological techniques were developed to parallelize the evidence propagation process through the Bayesian network. One technique involves performing intelligent scheduling of junction tree nodes based on its topology and relative size. The second technique involves decomposing the junction tree into a much finer tree-like representation to offer much more opportunities for parallelism. We evaluate these optimizations on five different Bayesian networks and report our findings and observations. Another important contribution of this paper is to demonstrate the application of massive-scale multithreading for load balancing and use of implicit parallelism-based compiler optimizations in designing scalable inferencing algorithms.

  2. Ab initio electronic transport study of two-dimensional silicon carbide-based p–n junctions

    Science.gov (United States)

    Zhou, Hanming; Lin, Xiao; Guo, Hongwei; Lin, Shisheng; Sun, Yiwei; Xu, Yang

    2017-03-01

    Two-dimensional silicon carbide (2d-SiC) is a viable material for next generation electronics due to its moderate, direct bandgap with huge potential. In particular, its potential for p–n junctions is yet to be explored. In this paper, three types of 2d-SiC-based p–n junctions with different doping configuration are modeled. The doping configurations refer to partially replacing carbon with boron or nitrogen atoms along the zigzag or armchair direction, respectively. By employing density functional theory, we calculate the transport properties of the SiC based p–n junctions and obtain negative differential resistance and high rectification ratio. We also find that the junction along the zigzag direction with lower doping density exhibits optimized rectification performance. Our study suggests that 2d-SiC is a promising candidate as a material platform for future nano-devices. Project supported by the National Science Foundation of China (Nos. 61474099, 61674127) and the ZJ-NSF (No. Z17F04003).

  3. Size effect on the magnetic and electronic properties of the monolayer lateral hetero-junction WS{sub 2}-MoS{sub 2} nanoribbon

    Energy Technology Data Exchange (ETDEWEB)

    Wen, Yan-Ni [Department of Applied Physics, School of Science, Xi’an Jiaotong University, Shaanxi 710049 (China); Ankang University, Ankang, 725000 Shannxi (China); Xia, Ming-Gang [Department of Applied Physics, School of Science, Xi’an Jiaotong University, Shaanxi 710049 (China); Department of Optical Information Science and Technology, School of Science, Xi’an Jiaotong University, 710049 (China); Zhang, Sheng-Li, E-mail: zhangsl@mail.xjtu.edu.cn [Department of Applied Physics, School of Science, Xi’an Jiaotong University, Shaanxi 710049 (China)

    2016-05-15

    Highlights: • The magnetic moment decreases in the order of N{sub z} = 2, 6 and 4 (the width of zigzag NRs) • The magnetic moment decreases with the increased r{sub z} (the number of the Mo-S chains,r{sub z} ≠ 0 and r{sub z} ≠ N{sub z}) at the same width N{sub z}. • The energy band varies with the increased N{sub A} (the width of armchair NRs) and r{sub A} (r{sub A} = 0∼ N{sub A}) at the same width N{sub A}. • The lowest band gap 0.150 eV and the highest one 0.581 eV can be obtained from the armchair WS2-MoS2 NRs, respectively. - Abstract: By using the VASP, we studied the magnetic and electronic properties of the monolayer lateral hetero-junction WS{sub 2}-MoS{sub 2}-nanoribbons (WS{sub 2}-MoS{sub 2}-NRs). Our results show that the NRs’ edge chirality and width affect significantly its magnetic and electronic properties. The monolayer lateral hetero-junction ZZ-WS{sub 2}-MoS{sub 2}-NRs(ZZ: zigzag) exhibitmetallic behavior and have considerable magnetic moment. Their magnetic moments decrease in the order of N{sub z} = 2, 6 and 4 (the width of NRs). While, the magnetic moment decreases with the increased r{sub z} (the number of the Mo-S chains, r{sub z} ≠ 0 and r{sub z} ≠ N{sub z}) at the same width N{sub z}. The N{sub A}-AC-WS{sub 2}-NR (AC: armchair) and N{sub A}-AC-WS{sub 2}-MoS{sub 2}-NR-1 (the number of the Mo-S chain is 1) show metallic behavior when N{sub A} = 3 (the width of NRs). The other monolayer lateral hetero-junction AC-WS{sub 2}-MoS{sub 2}-NRs remain the nonmagnetic and semiconductingbehavior as bulk. But they are indirect band-gap except for the N{sub A} = 3, r{sub A} = 2 (the number of the Mo-S chains) and N{sub A} = 7, r{sub A} = 0 when N{sub A} < 9. However they are direct band-gap when N{sub A} ≥ 9. Their lowest and highest band gaps are 0.150 eV and 0.581 eV, respectively. These unique magnetic and electronic properties will provide guidanceon the WS{sub 2}-MoS{sub 2} hetero-junction application in nanodevice.

  4. Nanosecond-Timescale Low Energy Switching of In-Plane Magnetic Tunnel Junctions through Dynamic Oersted-Field-Assisted Spin Hall Effect.

    Science.gov (United States)

    Aradhya, S V; Rowlands, G E; Oh, J; Ralph, D C; Buhrman, R A

    2016-10-12

    We investigate fast-pulse switching of in-plane-magnetized magnetic tunnel junctions (MTJs) within 3-terminal devices in which spin-transfer torque is applied to the MTJ by the giant spin Hall effect. We measure reliable switching, with write error rates down to 10(-5), using current pulses as short as just 2 ns in duration. This represents the fastest reliable switching reported to date for any spin-torque-driven magnetic memory geometry and corresponds to a characteristic time scale that is significantly shorter than predicted possible within a macrospin model for in-plane MTJs subject to thermal fluctuations at room temperature. Using micromagnetic simulations, we show that in the three-terminal spin-Hall devices the Oersted magnetic field generated by the pulse current strongly modifies the magnetic dynamics excited by the spin-Hall torque, enabling this unanticipated performance improvement. Our results suggest that in-plane MTJs controlled by Oersted-field-assisted spin-Hall torque are a promising candidate for both cache memory applications requiring high speed and for cryogenic memories requiring low write energies.

  5. Inhomogeneous free layer in perpendicular magnetic tunnel junctions and its impact on the effective anisotropies and spin transfer torque switching efficiency

    Science.gov (United States)

    Timopheev, A. A.; Teixeira, B. M. S.; Sousa, R. C.; Aufret, S.; Nguyen, T. N.; Buda-Prejbeanu, L. D.; Chshiev, M.; Sobolev, N. A.; Dieny, B.

    2017-07-01

    Magnetoresistive and magnetoresonance measurements carried out on patterned perpendicular magnetic tunnel junction pillars and full-sheet films reveal magnetic inhomogeneities of FeCoB free layer grown on MgO and coated with Ta. At low FeCoB thicknesses, the layer behaves as an ensemble of weakly coupled grains resulting in a decrease of the free-layer thermal stability. In contrast, for thicker layers, the grains become more strongly coupled but strong magnetic inhomogeneities remain, yielding the emergence and further increase of a second-order magnetic anisotropy term (˜K2 effco s4θ ), eventually resulting in an easy-cone anisotropy. We show that the static and dynamic magnetic properties of such a free layer can be successfully described by a granular model with three thickness-dependent parameters: mean perpendicular anisotropy of the grains, grain-to-grain anisotropy distribution, and intergrain exchangelike coupling strength. Easy-cone anisotropy may help reduce the stochasticity of the spin transfer torque switching. However, it arises at intermediate values of the intergrain exchange coupling where the spin transfer torque (STT) switching efficiency is degraded, as shown by multimacrospin modeling. This is due to the excitation of exchange modes contributing weakly to the STT switching process while dissipating part of the STT energy.

  6. Study of CoFeB thickness and composition dependence in a modified CoFeB/MgO/CoFeB perpendicular magnetic tunnel junction

    Science.gov (United States)

    Zhu, M.; Chong, H.; Vu, Q. B.; Brooks, R.; Stamper, H.; Bennett, S.

    2016-02-01

    We studied the CoFeB thickness and composition dependence of tunneling magnetoresistance (TMR) and resistance-area product (RA) in a modified CoFeB/MgO/CoFeB perpendicular magnetic tunnel junction (MTJ), in which the bottom CoFeB is coupled to an in-plane exchange biased magnetic layer. This stack structure allows us to measure TMR and RA of the MTJs in sheet film format without patterning them, using current-in-plane-tunneling (CIPT) technique. The thickness ranges for both top and bottom CoFeB to exhibit perpendicular magnetic anisotropy are similar to what are seen in each single magnetic film stack. However, CIPT measurement revealed that there exists an optimal thickness for both top and bottom CoFeB to achieve the highest TMR value. Magnetic hysteresis loops also suggest the thickness-dependent coupling between the top and bottom CoFeB layers. We studied MTJs with two CoFeB compositions (Co40Fe40B20 and Co20Fe60B20) and found that Co20Fe60B20 MTJs give higher TMR and also wider perpendicular thickness range when used at the top layer.

  7. Terahertz frequency metrology based on high-T sub c Josephson junctions

    CERN Document Server

    Chen, J; Wang, H B; Nakajima, K; Yamashita, T; Wu, P H

    2002-01-01

    Using YBa sub 2 Cu sub 3 O sub 7 /MgO bicrystal Josephson junctions operating between 6-77 K, we have studied their responses to monochromatic electromagnetic radiation from 50 GHz to 4.25 THz. We have obtained direct detections for radiation at 70 K from 50 GHz to 760 GHz and at 40 K from 300 GHz to 3.1 THz. This indicates that fast detectors can be realized to cover the 10:1 frequency band at one operation temperature, and about 100:1 can be covered by operating only one junction at two different temperatures. Both the highest response frequency and the maximum value of the normalized response are shown to be proportional to the I sub C R sub N product of the junction, where I sub C and R sub N are the critical current and the normal resistance of the junction, respectively.

  8. Highly efficient organic multi-junction solar cells with a thiophene based donor material

    Energy Technology Data Exchange (ETDEWEB)

    Meerheim, Rico, E-mail: rico.meerheim@iapp.de; Körner, Christian; Leo, Karl, E-mail: karl.leo@iapp.de [Institut für Angewandte Photophysik, Technische Universität Dresden, George-Bähr-Straße 1, 01062 Dresden (Germany)

    2014-08-11

    The efficiency of organic solar cells can be increased by serial stacked subcells even upon using the same absorber material. For the multi-junction devices presented here, we use the small molecule donor material DCV5T-Me. The subcell currents were matched by optical transfer matrix simulation, allowing an efficiency increase from 8.3% for a single junction up to 9.7% for a triple junction cell. The external quantum efficiency of the subcells, measured under appropriate light bias illumination, is spectrally shifted due to the microcavity of the complete stack, resulting in a broadband response and an increased cell current. The increase of the power conversion efficiency upon device stacking is even stronger for large area cells due to higher influence of the resistance of the indium tin oxide anode, emphasizing the advantage of multi-junction devices for large-area applications.

  9. Mo1-xWxSe2-Based Schottky Junction Photovoltaic Cells.

    Science.gov (United States)

    Yi, Sum-Gyun; Kim, Sung Hyun; Park, Sungjin; Oh, Donggun; Choi, Hwan Young; Lee, Nara; Choi, Young Jai; Yoo, Kyung-Hwa

    2016-12-14

    We developed Schottky junction photovoltaic cells based on multilayer Mo1-xWxSe2 with x = 0, 0.5, and 1. To generate built-in potentials, Pd and Al were used as the source and drain electrodes in a lateral structure, and Pd and graphene were used as the bottom and top electrodes in a vertical structure. These devices exhibited gate-tunable diode-like current rectification and photovoltaic responses. Mo0.5W0.5Se2 Schottky diodes with Pd and Al electrodes exhibited higher photovoltaic efficiency than MoSe2 and WSe2 devices with Pd and Al electrodes, likely because of the greater adjusted band alignment in Mo0.5W0.5Se2 devices. Furthermore, we showed that Mo0.5W0.5Se2-based vertical Schottky diodes yield a power conversion efficiency of ∼16% under 532 nm light and ∼13% under a standard air mass 1.5 spectrum, demonstrating their remarkable potential for photovoltaic applications.

  10. Self-powered and broadband photodetectors based on graphene/ZnO/silicon triple junctions

    Energy Technology Data Exchange (ETDEWEB)

    Cheng, Ching-Cheng; Liao, Yu-Ming; Chen, Yang-Fang, E-mail: yfchen@phys.ntu.edu.tw [Department of Physics, National Taiwan University, Taipei 10617, Taiwan (China); Zhan, Jun-Yu; Lin, Tai-Yuan [Institute of Optoelectronic Sciences, National Taiwan Ocean University, Keelung 202, Taiwan (China); Hsieh, Ya-Ping [Graduate Institute of Opto-Mechatronics, National Chung Cheng University, Chia-Yi 621, Taiwan (China)

    2016-08-01

    A self-powered photodetector with ultrahigh sensitivity, fast photoresponse, and wide spectral detectivity covering from 1000 nm to 400 nm based on graphene/ZnO/Si triple junctions has been designed, fabricated, and demonstrated. In this device, graphene serves as a transparent electrode as well as an efficient collection layer for photogenerated carriers due to its excellent tunability of Fermi energy. The ZnO layer acts as an antireflection layer to trap the incident light and enhance the light absorption. Furthermore, the insertion of the ZnO layer in between graphene and Si layers can create build-in electric field at both graphene/ZnO and ZnO/Si interfaces, which can greatly enhance the charge separation of photogenerated electron and hole pairs. As a result, the sensitivity and response time can be significantly improved. It is believed that our methodology for achieving a high-performance self-powered photodetector based on an appropriate design of band alignment and optical parameters can be implemented to many other material systems, which can be used to generate unique optoelectronic devices for practical applications.

  11. A physics-based compact model of ferroelectric tunnel junction for memory and logic design

    Science.gov (United States)

    Wang, Zhaohao; Zhao, Weisheng; Kang, Wang; Bouchenak-Khelladi, Anes; Zhang, Yue; Zhang, Youguang; Klein, Jacques-Olivier; Ravelosona, Dafiné; Chappert, Claude

    2014-01-01

    Ferroelectric tunnel junction (FTJ) is able to store non-volatile data in the spontaneous polarization direction of ferroelectric tunnel barrier. Recent progress has demonstrated its great potential to build up the next generation non-volatile memory and logic (NVM and NVL) thanks to the high OFF/ON resistance ratio, fast operation speed, low write power, non-destructive readout and so on. In this paper, we present the first physics-based compact model for Co/BTO/LSMO FTJ nanopillar, which was reported experimentally to exhibit excellent NVM performance. This model integrates related physical models of tunnel resistance, static switching voltage and dynamic switching delay. Its accuracy is shown by the good agreement between numerical model simulation and experimental measurements. This compact model has been developed in Verilog-A language and validated by single-cell simulation on Cadence Virtuoso Platform. Hybrid simulations based on 40 nm-technology node of FTJ memory arrays and non-volatile full adder were performed to demonstrate the efficiency of our compact model for the simulation and analysis of CMOS/FTJ integrated circuits.

  12. Electronic transport properties of molecular junctions based on the direct binding of aromatic ring to electrodes

    Energy Technology Data Exchange (ETDEWEB)

    Lan, Tran Nguyen, E-mail: lantran@ims.ac.jp

    2014-01-15

    Highlights: • Transport properties of molecular junction having direct binding of aromatic ring to electrode have been investigated. • The conductance of junction with sp-type electrode is higher than that of junction with sd-type electrode. • The rectifying mechanism critically depends on the nature of benzene–electrode coupling. • The p–n junction-like can be obtained even without heteroatom doping. • The negative differential resistance effect was observed for the case of sp-type electrode. - Abstract: We have used the non-equilibrium Green’s function in combination with the density functional theory to investigate the quantum transport properties of the molecular junctions including a terminated benzene ring directly coupled to surface of metal electrodes (physisorption). The other side of molecule was connected to electrode via thiolate bond (chemisorption). Two different electrodes have been studied, namely Cu and Al. Rectification and negative differential resistance behavior have been observed. We found that the electron transport mechanism is affected by the nature of benzene–electrode coupling. In other words, the transport mechanism depends on the nature of metallic electrode. Changing from sp- to sd-metallic electrode, the molecular junction changes from the Schottky to p–n junction-like diode. The transmission spectra, projected density of state, molecular projected self-consistent Hamiltonian, transmission eigenchannel, and Muliken population have been analyzed for explanation of electronic transport properties. Understanding the transport mechanism in junction having direct coupling of π-conjugate to electrode will be useful to design the future molecular devices.

  13. In situ study of hydrogen diffusion in a-Si:H based junctions exposed to hydrogen plasma

    Energy Technology Data Exchange (ETDEWEB)

    Larbi, Fadila; Hadjadj, Aomar [Groupe de Recherche en Sciences pour l' Ingenieur (GRESPI), Universite de Reims (France); Fellah, Samira; Roca i Cabarrocas, Pere [Laboratoire de Physique des Interfaces et Couches Minces (LPICM), Ecole Polytechnique, Palaiseau (France); Dine Sib, Jamal [Laboratoire de Physique des Couches Minces et Materiaux pour l' Electronique (LPCM2E), Universite d' Oran (Algeria)

    2012-06-15

    Just after their deposition by plasma enhanced chemical vapor deposition (PECVD) process, we have exposed Cr/I/N, Cr/I/P, Cr/N/I and Cr/P/I a-Si:H based junctions to H{sub 2} plasma and followed in situ, by ellipsometry, the modifications induced by hydrogen diffusion. In the case of Cr/N/I and Cr/P/I junctions, no significant effects of the junction on the hydrogen diffusion were observed since the time-evolution of the thickness of the H-modified layer is similar to that of a single intrinsic layer. However, Cr/I/N, Cr/I/P structures present an attenuated thickness of the H-modified layer in the first few minutes of hydrogen plasma exposure. This effect should be attributed to the charges in the field regions of I/N or I/P junctions which increase the hydrogen trap concentration and restrain the hydrogen diffusion. (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  14. A sensitive ultraviolet light photodiode based on graphene-on-zinc oxide Schottky junction

    Directory of Open Access Journals (Sweden)

    Zhang Teng-Fei

    2016-11-01

    Full Text Available In this study, we present a simple ultraviolet (UV light photodiode by transferring a layer of graphene film on single-crystal ZnO substrate. The as-fabricated heterojunction exhibited typical rectifying behavior, with a Schottky barrier height of 0.623 eV. Further optoelectronic characterization revealed that the graphene-ZnO Schottky junction photodiode displayed obvious sensitivity to 365-nm light illumination with good reproducibility. The responsivity and photoconductive gain were estimated to be 3×104 A/W and 105, respectively, which were much higher than other ZnO nanostructure-based devices. In addition, it was found that the on/off ratio of the present device can be considerably improved from 2.09 to 12.1, when the device was passivated by a layer of AlOx film. These results suggest that the present simply structured graphene-ZnO UV photodiode may find potential application in future optoelectronic devices.

  15. Perfect GMR effect in gapped graphene-based ferromagnetic normal ferromagnetic junctions

    Institute of Scientific and Technical Information of China (English)

    Hossein Karbaschi; Gholam Reza Rashedi

    2015-01-01

    We investigate the quantum transport property in gapped graphene-based ferromagnetic/normal/ferromagnetic (FG/NG/FG) junctions by using the Dirac–Bogoliubov–de Gennes equation. The graphene is fabricated on SiC and BN substrates separately, so carriers in FG/NG/FG structures are considered as massive relativistic particles. Transmission prob-ability, charge, and spin conductances are studied as a function of exchange energy of ferromagnets (h), size of graphene gap, and thickness of normal graphene region (L) respectively. Using the experimental values of Fermi energy in the normal graphene part (EFN∼400 meV) and energy gap in graphene (260 meV for SiC and 50 meV for BN substrate), it is shown that this structure can be used for both spin-up and spin-down polarized current. The latter case has different behavior of gapped FG/NG/FG from that of gapless FG/NG/FG structures. Also perfect charge giant magnetoresistance is observed in a range of EFN−mv2F

  16. RKKY interaction in P-N junction based on surface states of 3D topological insulator

    Science.gov (United States)

    Zhang, Shuhui; Yang, Wen; Chang, Kai

    The RKKY interaction mediated by conduction electrons supplies a mechanism to realize the long-range coupling of localized spins which is desired for the spin devices. Here, we examine the controllability of RKKY interaction in P-N junction (PNJ) based on surface states of 3D topological insulator (3DTI). In this study, through quantum way but not usual classical analogy to light propagation, the intuitive picture for electron waves across the interface of PNJ is obtained, e.g., Klein tunneling, negative refraction and focusing. Moreover, we perform the numerical calculations for all kinds of RKKY interaction including the Heisenberg, Ising, and Dzyaloshinskii-Moriya terms. We find the focusing of surface states leads to the local augmentation of RKKY interaction. Most importantly, a dimension transition occurs, i.e., the decay rate of RKKY interaction from the deserved 1/R 2 to 1/ R . In addition, the quadratic gate-dependence of RKKY interaction is also beneficial to the application of 3DTI PNJ in the fields of spintronics and quantum computation. This work was supported by the MOST (Grant No. 2015CB921503, and No. 2014CB848700) and NSFC (Grant No. 11434010, No. 11274036, No. 11322542, and No. 11504018).

  17. Ab initio study of the thermopower of biphenyl-based single-molecule junctions

    Science.gov (United States)

    Bürkle, M.; Zotti, L. A.; Viljas, J. K.; Vonlanthen, D.; Mishchenko, A.; Wandlowski, T.; Mayor, M.; Schön, G.; Pauly, F.

    2012-09-01

    By employing ab initio electronic-structure calculations combined with the nonequilibrium Green's function technique, we study the dependence of the thermopower Q on the conformation in biphenyl-based single-molecule junctions. For the series of experimentally available biphenyl molecules, alkyl side chains allow us to gradually adjust the torsion angle ϕ between the two phenyl rings from 0∘ to 90∘ and to control in this way the degree of π-electron conjugation. Studying different anchoring groups and binding positions, our theory predicts that the absolute values of the thermopower decrease slightly towards larger torsion angles, following an a+bcos2ϕ dependence. The anchoring group determines the sign of Q and a,b simultaneously. Sulfur and amine groups give rise to Q,a,b>0, while for cyano, Q,a,bbinding positions can lead to substantial variations of the thermopower mostly due to changes in the alignment of the frontier molecular orbital levels and the Fermi energy. We explain our ab initio results in terms of a π-orbital tight-binding model and a minimal two-level model, which describes the pair of hybridizing frontier orbital states on the two phenyl rings. The variations of the thermopower with ϕ seem to be within experimental resolution.

  18. Optical losses in multi-junction a-Si:H based solar cells and modules

    Science.gov (United States)

    Wiedeman, S.; Morris, J.; Yang, L.

    A comprehensive optical model is described which is applicable to glass/textured CTO/a-Si:H/a-SiGe:H-based multijunction cells and allows the calculation of optical absorption in each layer of the solar cell. The major optical losses which limit the output current density of tandem cells using 1.72-eV/1.50-eV bandgap a-Si:H/a-SiGe:H and an ITO/Ag rear contact to about 20.8 mA/sq cm (sum of both junctions) are identified and discussed. It is shown that improvements in the reflectivity and scattering properties of the rear contact may be expected to result in current densities of 22.3 mA/sq cm in this type of cell using intrinsic layers of limited thickness. The use of low-cost materials, such as soda-lime glass and the aluminum rear contacts typically employed in the manufacture of large-area modules, should reduce the total current density available to 18.5 mA/sq cm.

  19. Magnetic tunneling junctions with the Heusler compound Co{sub 2}Cr{sub 0.6}Fe{sub 0.4}Al

    Energy Technology Data Exchange (ETDEWEB)

    Conca Parra, A.

    2007-07-20

    Materials with large spin polarization are required for applications in spintronics devices. For this reason, major research efforts are directed to study the properties of compounds which are expected to be half metals, i.e. materials with 100% spin polarization. Half metals are expected to have a gap in the density of states at the Fermi energy for one spin band while the other spin band is metallic leading to a completely spin polarized current. The ferromagnetic full Heusler alloy Co{sub 2}Cr{sub 0.6}Fe{sub 0.4}Al (CCFA) has attracted great interest in the field of spintronics. The high Tc (800 K) and the expected half metallicity make CCFA a good candidate for applications in spintronic devices such as magnetic tunneling junctions (MTJs). This thesis presents the results of the study of the electronic and structural properties of CCFA thin films. The films were implemented in magnetic tunneling junctions and the tunneling magnetoresistance effect (TMR) was investigated. The main objectives were the measurement of the spin polarisation of the CCFA alloy and to obtain information about its electronic structure. The influence of the deposition conditions on the thin film properties and on the surface crystalline order and their respective influence on the TMR ratio was investigated. Epitaxial CCFA thin films with two alternative growth orientations were deposited on different substrates and buffer layers. An annealing step was used to improve the crystalline properties of the thin films. In the tunneling junctions, Al{sub 2}O{sub 3} was used as a barrier material and Co was chosen as counter electrode. The multilayer systems were patterned in Mesa structures using lithographic techniques. In the framework of the Julliere model, a maximum spin polarisation of 54% at 4K was measured in tunneling junctions with epitaxial CCFA electrodes. A strong influence of the annealing temperature on the TMR ratio was determined. The increase of the TMR ratio could be correlated

  20. Hybrid pn-junction solar cells based on layers of inorganic nanocrystals and organic semiconductors: optimization of layer thickness by considering the width of the depletion region.

    Science.gov (United States)

    Saha, Sudip K; Guchhait, Asim; Pal, Amlan J

    2014-03-07

    We report the formation and characterization of hybrid pn-junction solar cells based on a layer of copper diffused silver indium disulfide (AgInS2@Cu) nanoparticles and another layer of copper phthalocyanine (CuPc) molecules. With copper diffusion in the nanocrystals, their optical absorption and hence the activity of the hybrid pn-junction solar cells was extended towards the near-IR region. To decrease the particle-to-particle separation for improved carrier transport through the inorganic layer, we replaced the long-chain ligands of copper-diffused nanocrystals in each monolayer with short-ones. Under illumination, the hybrid pn-junctions yielded a higher short-circuit current as compared to the combined contribution of the Schottky junctions based on the components. A wider depletion region at the interface between the two active layers in the pn-junction device as compared to that of the Schottky junctions has been considered to analyze the results. Capacitance-voltage characteristics under a dark condition supported such a hypothesis. We also determined the width of the depletion region in the two layers separately so that a pn-junction could be formed with a tailored thickness of the two materials. Such a "fully-depleted" device resulted in an improved photovoltaic performance, primarily due to lessening of the internal resistance of the hybrid pn-junction solar cells.

  1. High efficiency single Ag nanowire/p-GaN substrate Schottky junction-based ultraviolet light emitting diodes

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Y.; Li, X.; Xu, P.; Wang, Y.; Shen, X.; Liu, X.; Yang, Q., E-mail: qingyang@zju.edu.cn [State Key Laboratory of Modern Optical Instrumentation, Department of Optical Engineering, Zhejiang University, Hangzhou 310027 (China); Hasan, T. [Cambridge Graphene Centre, University of Cambridge, Cambridge CB3 0FA (United Kingdom)

    2015-02-02

    We report a high efficiency single Ag nanowire (NW)/p-GaN substrate Schottky junction-based ultraviolet light emitting diode (UV-LED). The device demonstrates deep UV free exciton electroluminescence at 362.5 nm. The dominant emission, detectable at ultralow (<1 μA) forward current, does not exhibit any shifts when the forward current is increased. External quantum efficiency (EQE) as high as 0.9% is achieved at 25 μA current at room temperature. Experiments and simulation analysis show that devices fabricated with thinner Ag NWs have higher EQE. However, for very thin Ag NWs (diameter < 250 nm), this trend breaks down due to heat accumulation in the NWs. Our simple device architecture offers a potentially cost-effective scheme to fabricate high efficiency Schottky junction-based UV-LEDs.

  2. Gap Junctions

    Science.gov (United States)

    Nielsen, Morten Schak; Axelsen, Lene Nygaard; Sorgen, Paul L.; Verma, Vandana; Delmar, Mario; Holstein-Rathlou, Niels-Henrik

    2013-01-01

    Gap junctions are essential to the function of multicellular animals, which require a high degree of coordination between cells. In vertebrates, gap junctions comprise connexins and currently 21 connexins are known in humans. The functions of gap junctions are highly diverse and include exchange of metabolites and electrical signals between cells, as well as functions, which are apparently unrelated to intercellular communication. Given the diversity of gap junction physiology, regulation of gap junction activity is complex. The structure of the various connexins is known to some extent; and structural rearrangements and intramolecular interactions are important for regulation of channel function. Intercellular coupling is further regulated by the number and activity of channels present in gap junctional plaques. The number of connexins in cell-cell channels is regulated by controlling transcription, translation, trafficking, and degradation; and all of these processes are under strict control. Once in the membrane, channel activity is determined by the conductive properties of the connexin involved, which can be regulated by voltage and chemical gating, as well as a large number of posttranslational modifications. The aim of the present article is to review our current knowledge on the structure, regulation, function, and pharmacology of gap junctions. This will be supported by examples of how different connexins and their regulation act in concert to achieve appropriate physiological control, and how disturbances of connexin function can lead to disease. © 2012 American Physiological Society. Compr Physiol 2:1981-2035, 2012. PMID:23723031

  3. Gap junctions.

    Science.gov (United States)

    Nielsen, Morten Schak; Axelsen, Lene Nygaard; Sorgen, Paul L; Verma, Vandana; Delmar, Mario; Holstein-Rathlou, Niels-Henrik

    2012-07-01

    Gap junctions are essential to the function of multicellular animals, which require a high degree of coordination between cells. In vertebrates, gap junctions comprise connexins and currently 21 connexins are known in humans. The functions of gap junctions are highly diverse and include exchange of metabolites and electrical signals between cells, as well as functions, which are apparently unrelated to intercellular communication. Given the diversity of gap junction physiology, regulation of gap junction activity is complex. The structure of the various connexins is known to some extent; and structural rearrangements and intramolecular interactions are important for regulation of channel function. Intercellular coupling is further regulated by the number and activity of channels present in gap junctional plaques. The number of connexins in cell-cell channels is regulated by controlling transcription, translation, trafficking, and degradation; and all of these processes are under strict control. Once in the membrane, channel activity is determined by the conductive properties of the connexin involved, which can be regulated by voltage and chemical gating, as well as a large number of posttranslational modifications. The aim of the present article is to review our current knowledge on the structure, regulation, function, and pharmacology of gap junctions. This will be supported by examples of how different connexins and their regulation act in concert to achieve appropriate physiological control, and how disturbances of connexin function can lead to disease. © 2012 American Physiological Society. Compr Physiol 2:1853-1872, 2012.

  4. Superconducting transport in single and parallel double InAs quantum dot Josephson junctions with Nb-based superconducting electrodes

    Energy Technology Data Exchange (ETDEWEB)

    Baba, Shoji, E-mail: baba@meso.t.u-tokyo.ac.jp; Sailer, Juergen [Department of Applied Physics, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan); Deacon, Russell S. [Center for Emergent Matter Science (CEMS), RIKEN, Wako, Saitama 351-0198 (Japan); RIKEN Advanced Science Laboratory, 2-1 Hirosawa, Wako, Saitama 351-0198 (Japan); Oiwa, Akira [The Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047 (Japan); Shibata, Kenji [Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505 (Japan); Department of Electronics and Intelligent Systems, Tohoku Institute of Technology, Sendai 982-8577 (Japan); Hirakawa, Kazuhiko [Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505 (Japan); JST CREST, 4-1-8 Hon-cho, Kawaguchi-shi, Saitama 332-0012 (Japan); Tarucha, Seigo [Department of Applied Physics, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan); Center for Emergent Matter Science (CEMS), RIKEN, Wako, Saitama 351-0198 (Japan); INQIE, The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505 (Japan); QPEC, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku 113-8656 (Japan)

    2015-11-30

    We report conductance and supercurrent measurements for InAs single and parallel double quantum dot Josephson junctions contacted with Nb or NbTiN superconducting electrodes. Large superconducting gap energy, high critical field, and large switching current are observed, all reflecting the features of Nb-based electrodes. For the parallel double dots, we observe an enhanced supercurrent when both dots are on resonance, which may reflect split Cooper pair tunneling.

  5. Characteristics of Schottky Barrier Junction Based on Hexagonal Microtube ZnO

    Institute of Scientific and Technical Information of China (English)

    GAO Hui; LI Yan; YANG Li-ping; DENG Hong

    2005-01-01

    Hexagonal microtube ZnO was firstly grown on single crystal p-Si (111) substrates by hydrothermal method, and fabricated Ag/n-ZnO and Au/n-ZnO Schottky junction. Schottky effective barrier heights were calculated by I-V measurement. It is confirmed that the presence of a large amount of surface states related possibly to lattice imperfections existed near the surface leads to the pinning of the surface Fermi level at 0.35 eV below the conduction-band edge. Then the fabricated Schottky barrier junctions are evaluated for their use as UV photodetectors.

  6. 86% TMR at 4.2 K for Amorphous Magnetic-Tunnel-Junctions with Co60Fe20B20 as Free and Pinned Layers

    Institute of Scientific and Technical Information of China (English)

    Feifei LI; Xiufeng HAN; Lixian JIANG; Jing ZHAO; Lei WANG; Rehana Sharif

    2005-01-01

    Single barrier magnetic-tunnel-junctions (MTJs) with the layer structure of Ta(5)/Cu(30)/Ta(5)/Ni79Fe21 (5)/Ir22 Mn78(12)/Co60Fe20B20(4)/Al(0.8)-oxide/Co60Fe20B20(4)/Cu(30)/Ta(5) [thickness unit: nm] using the amorphous Co60Fe20B20 alloy as free and pinned layers were micro-fabricated. The experimental investigations showed that the tunnel magnetoresistance (TMR) ratio and the resistance decrease with increasing dc bias voltage from 0 to 500 mV or with increasing temperature from 4.2 K to RT. A high TMR ratio of 86.2% at 4.2 K, which corresponds to the high spin polarization of Co60Fe20B20, 55%, was observed in the MTJs after annealing at 270℃ for 1 h. High TMR ratio of 53.1%, low junction resistance-area product RS of 3.56 kΩμm2, small coercivity HC of ≤4Oe, and relatively large bias-voltage-at-half-maximum TMR with the value V1/2 of greater than 570 mV at RT have been achieved in such Co-Fe-B MT Js.

  7. YBa{sub 2}Cu{sub 3}O{sub 7} grain boundary junction dc SQUIDs for operation in high magnetic fields

    Energy Technology Data Exchange (ETDEWEB)

    Konovalenko, Konstantin; Nagel, Joachim; Turad, Markus; Bailer, Matthias; Gruenzweig, Matthias; Kleiner, Reinhold; Koelle, Dieter [Physikalisches Institut, Center for Collective Quantum Phenomena, Universitaet Tuebingen (Germany)

    2009-07-01

    We investigate the suitability of dc SQUIDs for operation in high magnetic fields at 4.2 K. For this purpose, we fabricated small (micron-sized) YBa{sub 2}Cu{sub 3}O{sub 7}(YBCO) grain boundary junction dc SQUIDs on SrTiO{sub 3} bicrystals with thin film Au shunt resistors. Fabrication was done by pulsed laser deposition of YBCO films, in-situ deposition of electron-beam evaporated Au films and Ar ion milling with photolithographically defined masks. For the fabricated SQUIDs we present results on electric transport properties, measured in a four-point arrangement, and on noise properties, measured with a Nb dc SQUID amplifier.

  8. Reliability enhancement due to in-situ post-oxidation of sputtered MgO barrier in double MgO barrier magnetic tunnel junction

    Directory of Open Access Journals (Sweden)

    Chikako Yoshida

    2017-06-01

    Full Text Available We have investigated the effects of in-situ post-oxidation (PO of a sputtered MgO barrier in a double-MgO-barrier magnetic tunnel junction (MTJ and found that the short error rate was significantly reduced, the magnetoresistance (MR ratio was increased approximately 18%, and the endurance lifetime was extend. In addition, we found that the distribution of breakdown number (a measure of endurance exhibits trimodal characteristics, which indicates competition between extrinsic and intrinsic failures. This improvement in reliability might be related to the suppression of Fe and Co diffusion to the MgO barrier, as revealed by electron energy-loss spectroscopy (EELS analysis.

  9. Potential of asymmetrical Si/Ge and Ge/Si based hetero-junction transit time devices over homo-junction counterparts for generation of high power

    Institute of Scientific and Technical Information of China (English)

    Moumita Mukherjee; Pravash R. Tripathy; S. P. Pati

    2011-01-01

    Static and dynamic properties of both complementary n-Ge/p-Si and p-Ge/n-Si hetero-junction DoubleDrift IMPATT diodes have been investigated by an advanced and realistic computer simulation technique,developed by the authors,for operation in the Ka-,V- and W-band frequencies.The results are further compared with corresponding Si and Ge homo-junction devices.The study shows high values of device efficiency,such as 23%,22% and 21.5%,for n-Ge/p-Si IMPATTs at the Ka,V and W bands,respectively.The peak device negative conductances for n-Si/p-Ge and n-Ge/p-Si hetero-junction devices found to be 50.7 × 106 S/m2 and 71.3 × 106 S/m2,which are ~3-4 times better than their Si and Ge counterparts at the V-band.The computed values of RF powerdensity for n-Ge/p-Si hetero-junction IMPATTs are 1.0 × 109,1.1 × 109 and 1.4 × 109 W/m2,respectively,for Ka-,V- and W-band operation,which can be observed to be the highest when compared with Si,Ge and n-Si/p-Ge devices.Both of the hetero-junctions,especially the n-Ge/p-Si hetero-junction diode,can thus become a superior RF-power generator over a wide range of frequencies.The present study will help the device engineers to choose a suitable material pair for the development of high-power MM-wave IMPATT for applications in the civil and defense-related arena.

  10. Performance Analysis of Si-Based Ultra-Shallow Junction Photodiodes for UV Radiation Detection

    NARCIS (Netherlands)

    Shi, L.

    2013-01-01

    This thesis presents a performance investigation of newly-developed ultra-shallow junction photodiodes (PureB-diodes) for ultraviolet (UV) radiation detection. The photodiodes are fabricated by pure boron chemical vapor deposition (PureB CVD) technology, which can provide nanometer-thin boron cappin

  11. Quantum interference effects at room temperature in OPV-based single-molecule junctions

    DEFF Research Database (Denmark)

    Arroyo, Carlos R.; Frisenda, Riccardo; Moth-Poulsen, Kasper

    2013-01-01

    )-phenylenevinylene (OPV3) derivatives, in which the central benzene ring is coupled to either para- or meta-positions. Using the break-junction technique, we find that the conductance for a single meta-OPV3 molecule wired between gold electrodes is one order of magnitude smaller than that of a para-OPV3 molecule...

  12. Impact of derivatization on electron transmission through dithienylethene-based photoswitches in molecular junctions

    NARCIS (Netherlands)

    Van Dyck, Colin; Geskin, Victor; Kronemeijer, Auke J.; de Leeuw, Dago M.; Cornil, Jerome; Cornil, Jérôme

    2013-01-01

    We report a combined Non-Equilibrium Green's Function - Density Functional Theory study of molecular junctions made of photochromic diarylethenes between gold electrodes. The impact of derivatization of the molecule on the transmission spectrum is assessed by introducing: (i) substituents on the dia

  13. Microwave oscillator based on an intrinsic BSCCO-type Josephson junction

    DEFF Research Database (Denmark)

    Pedersen, Niels Falsig; Madsen, Søren Peder

    2005-01-01

    . The resulting model is a set of coupled nonlinear partial differential equations. By direct numerical simulations we have demonstrated that the qualitative behavior of the combined intrinsic Josephson junction and cavity system can be understood on the basis of general concepts of nonlinear oscillators...

  14. Schottky junction photovoltaic devices based on CdS single nanobelts.

    Science.gov (United States)

    Ye, Y; Dai, L; Wu, P C; Liu, C; Sun, T; Ma, R M; Qin, G G

    2009-09-16

    Schottky junction photovoltaic (PV) devices were fabricated on single CdS nanobelts (NBs). Au was used as the Schottky contact, and In/Au was used as the ohmic contact to CdS NB. Typically, the Schottky junction exhibits a well-defined rectifying behavior in the dark with a rectification ratio greater than 10(3) at +/- 0.3 V; and the PV device exhibits a clear PV behavior with an open circuit photovoltage of about 0.16 V, a short circuit current of about 23.8 pA, a maximum output power of about 1.6 pW, and a fill factor of 42%. Moreover, the output power can be multiplied by connecting two or more of the Schottky junction PV devices, made on a single CdS NB, in parallel or in series. This study demonstrates that the 1D Schottky junction PV devices, which have the merits of low cost, easy fabrication and material universality, can be an important candidate for power sources in nano-optoelectronic systems.

  15. Modeling superconducting networks containing Josephson junctions by means of PC-based circuit simulation software

    Energy Technology Data Exchange (ETDEWEB)

    Blackburn, J.A. (Department of Physics and Computing, Wilfrid Laurier University, Waterloo, ON (Canada)); Smith, H.J.T. (Department of Physics, University of Waterloo, Waterloo, ON (Canada))

    1990-09-01

    Software packages are now available with which complex analog electronic circuits can be simulated on desktop computers. Using Micro Cap III it is demonstrated that the modeling capabilities of such software can be extended to include {ital superconducting} networks by means of an appropriate equivalent circuit for a Josephson junction.

  16. Quantitative Evaluation of the Total Magnetic Moments of Colloidal Magnetic Nanoparticles: A Kinetics-based Method.

    Science.gov (United States)

    Liu, Haiyi; Sun, Jianfei; Wang, Haoyao; Wang, Peng; Song, Lina; Li, Yang; Chen, Bo; Zhang, Yu; Gu, Ning

    2015-06-08

    A kinetics-based method is proposed to quantitatively characterize the collective magnetization of colloidal magnetic nanoparticles. The method is based on the relationship between the magnetic force on a colloidal droplet and the movement of the droplet under a gradient magnetic field. Through computational analysis of the kinetic parameters, such as displacement, velocity, and acceleration, the magnetization of colloidal magnetic nanoparticles can be calculated. In our experiments, the values measured by using our method exhibited a better linear correlation with magnetothermal heating, than those obtained by using a vibrating sample magnetometer and magnetic balance. This finding indicates that this method may be more suitable to evaluate the collective magnetism of colloidal magnetic nanoparticles under low magnetic fields than the commonly used methods. Accurate evaluation of the magnetic properties of colloidal nanoparticles is of great importance for the standardization of magnetic nanomaterials and for their practical application in biomedicine.

  17. Electronic thermometry in tunable tunnel junction

    Energy Technology Data Exchange (ETDEWEB)

    Maksymovych, Petro

    2016-03-15

    A tunable tunnel junction thermometry circuit includes a variable width tunnel junction between a test object and a probe. The junction width is varied and a change in thermovoltage across the junction with respect to the change in distance across the junction is determined. Also, a change in biased current with respect to a change in distance across the junction is determined. A temperature gradient across the junction is determined based on a mathematical relationship between the temperature gradient, the change in thermovoltage with respect to distance and the change in biased current with respect to distance. Thermovoltage may be measured by nullifying a thermoelectric tunneling current with an applied voltage supply level. A piezoelectric actuator may modulate the probe, and thus the junction width, to vary thermovoltage and biased current across the junction. Lock-in amplifiers measure the derivatives of the thermovoltage and biased current modulated by varying junction width.

  18. The electrical properties of photodiodes based on nanostructure gallium doped cadmium oxide/p-type silicon junctions

    Science.gov (United States)

    Çavaş, M.; Yakuphanoğlu, F.; Karataş, Ş.

    2017-01-01

    Gallium doped cadmium-oxide (CdO: Ga) thin films were successfully deposited by sol-gel spin coating method on p-type Si substrate. The electrical properties of the photodiode based on nanostructure Ga doped n-CdO/p-Si junctions were investigated. The current-voltage (I-V) characteristics of the structure were investigated under various light intensity and dark. It was observed that generated photocurrent of the Au/n-CdO/p-Si junctions depended on light intensity. The capacitance-voltage and conductance-voltage measurements were carried out for this diode in the frequency range between 100 and 1000 kHz at room temperature by steps of 100 kHz. The capacitance decreased with increasing frequency due to a continuous distribution of the interface states. These results suggested that the Au/n-CdO/p-Si Schottky junctions could be utilized as a photosensor. Furthermore, the voltage and frequency dependence of series resistance were calculated from the C-V and G/ω-V measurements and plotted as functions of voltage and frequency. The distribution profile of R S -V gave a peak in the depletion region at low frequencies and disappeared with increasing frequencies.

  19. A cross-functional nanostructured platform based on carbon nanotube-Si hybrid junctions: where photon harvesting meets gas sensing

    Science.gov (United States)

    Rigoni, F.; Pintossi, C.; Drera, G.; Pagliara, S.; Lanti, G.; Castrucci, P.; de Crescenzi, M.; Sangaletti, L.

    2017-03-01

    A combination of the functionalities of carbon nanotube (CNT)-Si hybrid heterojunctions is presented as a novel method to steer the efficiency of the photovoltaic (PV) cell based on these junctions, and to increase the selectivity and sensitivity of the chemiresistor gas sensor operated with the p-doped CNT layer. The electrical characteristics of the junctions have been tracked by exposing the devices to oxidizing (NO2) and reducing (NH3) molecules. It is shown that when used as PV cells, the cell efficiency can be reversibly steered by gas adsorption, providing a tool to selectively dope the p-type layer through molecular adsorption. Tracking of the current-voltage curve upon gas exposure also allowed to use these cells as gas sensors with an enhanced sensitivity as compared to that provided by a readout of the electrical signal from the CNT layer alone. In turn, the chemiresistive response was improved, both in terms of selectivity and sensitivity, by operating the system under illumination, as the photo-induced charges at the junction increase the p-doping of CNTs making them more sensitive to NH3 and less to NO2.

  20. Simulation of characteristics of double-junction solar cells based on ZnSiP2 heterostructures on silicon substrate

    Science.gov (United States)

    Kudryashov, D. A.; Gudovskikh, A. S.; Mozharov, A. M.; Bol'shakov, A. D.; Mukhin, I. S.; Alferov, Zh. I.

    2015-12-01

    Design and operation modes of double-junction monolithic lattice-matched solar cells based on the ZnSiP2/Si system of materials have been calculated. The effect of the photoactive region thickness and minority carrier lifetime in ZnSiP2 layers on the efficiency of conversion of the incident solar light energy into electrical power was determined. It is shown that solar cells based on ZnSiP2/Si heterostructures can provide efficiencies of 28.8% at AM1.5D, 100 mW/cm2, and 33.3% at AM1.5D, 200 W/cm2.